1984_Unitrode_Semiconductor_Databook 1984 Unitrode Semiconductor Databook

User Manual: 1984_Unitrode_Semiconductor_Databook

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PART NUMBER INDEX
DESIGNERS' GUIDES
LINEAR INTEGRATED CIRCUITS
POWER TRANSISTORS & DARLINGTONS
POWER HYBRIDS & MODULES
RECTIFIERS
,

HIGH VOLTAGE RECTIFIERS, RECTIFIER
MODULES & MULTIPLIERS
RECTIFIER BRIDGES, DOUBLERS & CENTER·TAPS
POWER ZENERS & TRANSIENT VOLTAGE SUPPRESSORS

II

II

••
II

II

•II

II
SWITCHING & GENERAL PURPOSE DIODES III
PIN DIODES IfI
SENSISTORS· III
THYRISTORS (SCRs, PUTs)

MONOLITHIC CERAMIC CAPACITORS

II

III
HI·REL SCREENING III
THERMAL, MOUNTING & MECHANICAL SPECIFICATIONS III
SALES OFFICES III
APPLICATION & DESIGN DATA

@Copyright 1984 Unitrode Corporation, Lexington, MA. All rights reserved.

PRINTED IN U.S A.

-

-

--------

-

------

-

,
"

ii

INTRODUCTION
Unitrode is recognized today as a world-wide leader in the design,
manufacture and marketing of electronic components. From its inception
more than twenty-two years ago, Unitrode has earned and maintained a
reputation of setting the highest standards of reliability and performance.
Excellence was first established with a unique packaging concept for axialleaded rectifiers and zeners for the military market. This fused-in-glass
product is still unsurpassed in its reliability and performance.
Unitrode's products are designed to meet the demands of many markets
including:
• Data Processing
•
•
•
•

Military
Telecommunications
Industrial Controls
Instrumentation

Today, Unitrode offers a broad line of high quality, high performance
electronic components, including:
•
•
•
•
•

Power Transistors and Darlingtons
Power Hybrid Circuits and Modules
Power Rectifiers
Rectifier Assemblies
Power Zeners and Transient Voltage Suppressors

• Thyristors
• Switching and General Purpose Diodes
• PIN Diodes
• Monolithic Ceramic Capacitors
• Linear Integrated Circuits
We are also a leading manufacturer of data acquisition and conversion
products through our Micro Networks Division in Worcester, Massachusetts
and miniaturized power supply modules through our Powercube subsidiary
in Billerica, Massachusetts. Two recent acquisitions joined our ranks of
product offering; US Microtek Components of Sun Valley, California, a
manufacturer of monolithic ceramic capacitors and (EMI) filters adding to
our leadership position in the ceramic capacitor business and, Power
General Corporation of Canton, Massachusetts, a manufacturer of multiple
output switching power supplies and DC-DC converters.
This DATABOOK lists today's broadest line of discrete semiconductors,
linear integrated circuits and capacitors.
We take pride in our products, and know they will add more value to your
company's products.
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

iii

PRINTED IN U.S.A

iv

TABLE OF CONTENTS
Section

Page

1

PART NUMBER INDEX .... ............................... 1-1

2

DESIGNERS' GUIDES
Power Supply Designers' Guide ......................... 2-3
Motor Control Designers' Guide ........................ 2-16
Military Designers' Guide .............................. 2-17

3

LINEAR INTEGRATED CIRCUITS
Product Selection Guide ................................ 3-3
Data Sheets ........................................... 3-7

4

POWER TRANSISTORS & DARLINGTONS
Product Selection Guide ................................ 4-3
Data Sheets .......................................... 4-11

5

POWER HYBRIDS & MODULES
Product Selection Guide ................................ 5-3
Data Sheets ........................................... 5-4

6

RECTIFIERS
(Standard & Fast Recovery, High Efficiency & Schottky)
Product Selection Guide ................................ 6-3
Data Sheets ........................................... 6-8

7

HIGH VOLTAGE RECTIFIERS, RECTIFIER
MODULES & MULTIPLIERS
Product Selection Guide ................................ 7-3
Data Sheets .......................................... 7-10

8

RECTIFIER BRIDGES, DOUBLERS & CENTER·TAPS
Product Selection Guide ................................ 8-3
Data Sheets ........................................... 8-8

9

POWER ZENERS & TRANSIENT VOLTAGE SUPPRESSORS
Product Selection Guide ................................ 9-3
Data Sheets ........................................... 9-6

10

THYRISTORS (SCRs & PUTs)
Product Selection Guide ............................... 10-3
Data Sheets .......................................... 10-5

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

v

PRINTED IN

u.s

A

vi

Section

11

Page

SWITCHING & GENERAL PURPOSE DIODES
Product Selection Guide ............................... 11-3
Data Sheets .......................................... 11-4

12

PIN DIODES
Product Selection Guide ............................... 12-3
Data Sheets .......................................... 12-6

13

SENSISTORS®
Product Selection Guide ............................... 13-3
Data Sheets .......................................... 13-4

14

MONOLITHIC CERAMIC CAPACITORS
Data Sheets .......................................... 14-3

15

APPLICATION & DESIGN DATA .. ......................... 15-1

16

HI-REL SCREENING ..................................... 16-1

17

THERMAL, MOUNTING & MECHANICAL
SPECIFICATIONS . ....................................... 17-1

18

SALES OFFICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 18-1

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

vii

PRINTED IN U.S.A.

viii

PART NUMBER INDEX

1-1

II

1-2

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION
GENERAL PURPOSE
DIODE

11·8

1N251, J
1N456
1N456A
1N457, J .
1N457A
1N458, J
1N458A
1N459, J
1N459A
1N483*
1N483A*
1N483B, J, JTX
1N483C
1N485
1N485B, J, JTX

75mA; 40V; 00·7
90mA; 25V
75mA; 60V
55mA; 125V; 00·7
40mA; 175V
55mA; 150V; 00·7
100mA; 150V
40mA; 200V; 00·7
100mA; 200V
100mA; 70V
100mA; 70V
200mA; 80V; 00·7
100mA; 70V
100mA; 180V
200mA; 200V; 00·7

11·10

1N643, J

40mA; 200V; 00·7

11·12
11·12
11·12
11·12

1N645J, JTX
1N645·1J, JTX, JTXV
1N647, J, JTX
1N647·1, J, JTX, JTXV

400mA;
400mA;
400mA;
400mA;

11·10
11·10
11·14

1N662, J
1N663, J
1N914, J, JTX
1N914·1, A, B
1N916, B
1N3064J, JTX
1N3070, J, JTX, JTXV

40mA; 100V; 00·7
60mA; 100V; 00·7
75mA; 100V
75mA; 100V
75mA; 100V
75mA; 75V; 00·7
150mA; 200V; 00·35

11-4
11·6
*
11·6

·
·

11·6

11·6
*

•*

11·8
*

•

SWITCHING DIODE
RECTIFIER
270V
270V
480V
480V

PAGE

.

11·28
11·24

*
11-16
11·18

GENERAL PURPOSE
DIODE
11·20

1N3595, J, JTX, JTXV
1N3600, J, JTX, JTXV

RECTIFIER
6·8
6·8
6·8
6·8

1N3611,
1N3612,
1N3613,
1N3614,

J, JTX
J,JTX
J, JTX
J, JTX

"717

lr'-!3543

(~VEI0)

7·17
7·17
7·17
7·17

1N3644
1N3645
1N3646
1N3647
1N3656
1N3657
1N3658
1N3957
1N3981
1N3982
1N3983

(HVE15)
(HVE20)
(HVE25)
(HVE30)

··
·
·
*
*
*

9·21

1N4148, J, JTX, JTXV
1N4148·1J, JTX, JTXV
1N4149
1N4150, J, JTX, JTXV
1N4150·1J, JTX, JTXV
lN4151
lN4152

200mA;
150mA;
200m A;
200mA;
200m A;
200m A;
200mA;

JTXV
JTXV
JTXV
JTXV
JTXV

l.OA;200V
l.OA;400V
l.OA; 600V
l.OA; 800V
l.OA; 1000V

1N4305
1N4444
1N4446
1N4447
1N4448
1N4449
1N4450
1N4451
1N4452
1N4453
1N4454,J, JTX, JTXV
1N4454·1, J, JTX, JTXV

200mA;
200mA;
200mA;
200mA;
200mA;
200mA;
200mA;
200m A;
400mA;
200mA;
200mA;
200mA;

75V;
70V;
75V;
75V;
75V;
75V;
40V;
40V;
40V;
30V;
75V;
75V;

00·35
00·35
00·35
00·35
00·35
00·35
00·35
00·35
00·35
00·35
00·35
00·35

1N4461·1N4496,J,
JTX, JTXV
1N4500,
1N4531,
1N4532,
1N4534,
1N4607
1N4608

J,
J,
J,
J,

JTX
JTX, JTXV
JTX, JTXV
JTX, JTXV

l.5W; 5%
300mA;
125mA;
125mA;
150mA;
400mA;
500mA;

80V; 00·35
100V; 00·34
75V; 00·34
75V; 00·34
85V; 00·35
85V; 00·35

1N4883·1 N4884

3.0W; 5%

SWITCHING DIODE
11·18

1N4938, J, JTX

150mA; 200V, 00·7

6·12
6·12
6·12

1N4942, J,JTX,JTXV
1N4944, J, JTX, JTXV
1N4946, J, JTX, JTXV

l.OA; 200V
l.OA; 400V
l.OA; 600V

9·8

1N4954·1N4995, J,
JTX, JTXV
1N4996
1N5063·1N5117
1N5118·1N5134

5.0W;
5.0W;
3.0W;
5.0W;

1N5180
1N5181 (HVE40)
1N5182 (HVE50)
1N5183 (HVE75)
1N5184 (HVElOO)
1N5185
1N5186, J, JTX
1N5187, J, JTX
1N5188, J, JTX
1N5190, J, JTX
1N5207
1N5320
1N5330
1N5415, J, JTX, JTXV
1N5416, J, JTX, JTXV
1N5417, J, JTX, JTXV

4.0A; 100V
4.0kV
5.0kV
7.5kV
10.0kV
3.0A; 60V
3.0A; 100V
3.0A; 200V
3.0A; 400V
3.0A; 600V
4.0A; 400V
l.OA; 120V
0.5A; 1500V
3.0A; 50V
3.0A; 100V
3.0A; 200V

RECTIFIER

ZENER
9·8
9·21
9·25

5%
5%
5%
5%

RECTIFIER
*
7·17
7·17
7·17
7·17

*

6·14
6·14
6·14
6·14

SWITCHING DIODE
11·14
11·14
11·24
11·22
11·22
11·24
11·26

J, JTX,
J, JTX,
J, JTX,
J, JTX,
J,JTX,

ZENER
9·21

ZENER
3.0W; 5%

1N4245,
1N4246,
1N4247,
1N4248,
1N4249,

SWITCHING DIODE
11·34
11·14
11-16
11·28
11·32
11·32

l.OA; 200V
l.OA;400V
l.OA;600V
l.OA;800A
l.OkV
l.5kV
2.0kV
2.5kV
3.0kV
0.75A; 200V
0.75A; 400V
0.75A; 600V
l.OA; 1000V
2.0A; 200V
2.0A; 400V
l.OA; 600V

1N4096·1N4098

150mA; 75V; 00·35
150mA; 75V; 00·35
200mA; 35V; 00·35

ZENER
9·6

150mA; 150V; 00·7
200mA; 75V; 00·7

1N4153, J, JTX, JTXV
1N4153·1J, JTX, JTXV
1N4154

SWITCHING DIODE
11·26
11·26
11·24
11·24
11·24
11·24
11·30
11·30
11·32
11·30
11·16
11·16

SWITCHING DIODE
11·22

SWITCHING DIODE

RECTIFIER
6·10
6·10
6·10
6·10
6·10

SWITCHING DIODE

·

DESCRIPTION

PART NUMBER

100V; 00·35
100V; 00·35
75V; 00·35
75V; 00·35
75V; 00·35
75V; 00·35
40V; 00·35

*

*
*
6·16
6·16
6·16

* Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1-3

PRINTED IN U.S A

•

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PAGE

PART NUMBER

RECTIFIER
6-16
6-16
6-16

··
·

IN5418, J, JTX, JTXV
IN5419, J, JTX, JTXV
IN5420, J, JTX, JTXV
IN5433
IN5434
IN5435

3.0A; 400V
3.0A; 500V
3.0A; 600V
2.0A; 700V
2.0A; 700V
12.0A; 700V

12-6

IN5550,
IN5551,
IN5552,
IN5553,

J,
J,
J,
J,

JTX,
JTX,
JTX,
JTX,

7-10
7-10
7-10

IN5597, J
IN5600, J
IN5603, J

9-10
9-10
9-10
9-10

IN5610,
IN5611,
IN5612,
IN5613,

J,
J,
J,
J,

JTX
JTX
JTX
JTX

6-20
6-22
6-20
6-22
6-20
6-22
6-20

IN5614,
IN5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,

J,
J,
J,
J,
J,
J,
J,

JTX,
JTX,
JTX,
JTX,
JTX,
JTX,
JTX,

JTXV
JTXV
JTXV
JTXV

IN5957

Low Oistortion, AGC Oiode

ZENER
9-8
9-8

IN5968
IN5969

6-37
6-37

IN6097
IN6098

50A; 30V; 00-5
50A; 40V; 00-5

RECTIFIER MODULE

6-39
6-39
6-39

IN6304, J, JTX, JTXV
IN6305,J,JTX,JTXV
IN6306, J, JTX, JTXV

70A; 50V; 00-5
70A; l00V; 00-5
70A;150V; 00-5

lOkV
5.0kV
5.0kV

6-42
6-44

IN6391, J, JTX, JTXV
IN6392, J, JTX, JTXV

25A; 45V; 00-4
60A; 45V; 00-5

5.0A;
5.0A;
5.0A;
5.0A;

5.0W; 5%
5.0W; 5%

SCHOTTKY RECTIFIER

RECTIFIER

6-18
6-18
6-18
6-18

200V
400V
600V
800V

RECTIFIER

SCHOTTKY RECTIFIER

TRANSIENT VOLTAGE
SUPPRESSOR

TRANSIENT VOLTAGE
SUPPRESSOR

33V
43.7V
54V
191V

9-12
9-12
9-12
9-12
9-12
9-12
9-12
9-12

RECTIFIER
JTXV
JTXV
JTXV
JTXV
JTXV
JTXV
JTXV

l.OA; 200V
l.OA;200V
l.OA; 400V
l.OA;400V
l.OA;600V
l.OA;600V
l.OA;800V

··
··
·•
··•
··•
··
··•
·••
··
·•
·•
··
•
··
·

PIN DIODE
1N5767

General Purpose, PI N

6-24
6-28
6-24
6-24
6-28
6-24
6-24
6-28
6-24
6-28
6-24
6-24
6-28
6-24
6-24
6-28
6-24
6-31
6-24
6-24
6-31
6-24
6-24
6-31

1N5802
1N5802, J, JTX, JTXV
1N5803
1N5804
1N5804, J, JTX, JTXV
1N5805
1N5806
1N5806, J, JTX, JTXV
1N5807
1N5807, J, JTX, JTXV
1N5808
1N5809
1N5809, J, JTX, JTXV
1N581O
IN5811
1N5811, J, JTX, JTXV
1N5812
1N5812, J, JTX, JTXV
1N5813
1N5814
1N5814, J, JTX, JTXV
1N5815
1N5816
1N5816,J,JTX,JTXV

2.5A; 50V
2.5A; 50V
2.5A; 75V
2.5A; 100V
2.5A; 100V
2.5A; 125V
2.5A; 150V
2.5A; 150V
6.0A; 50V
6.0A; 50V
6.0A; 75V
6.0A; 100V
6.0A; 100V
6.0A; 125V
6.0A; 150V
6.0A; 150V
20.0A; 50V; 00-4
20.0A; 50V; 00-4
20.0A; 75V; 00-4
20.0A; 100V; 00-4
20.0A; 100V; 00-4
20.0A; 125V; 00-4
20.0A; 150V; 00-4
20.0A; 150V; 00-4

6-33
6-33
6-33
6-35
6-35
6-35

1N5817
1N5818
1N5819
1N5820
1N5821
1N5822

12-6

DESCRIPTION
PIN DIODE

RECTIFIER

SCHOTTKY RECTIFIER
l.OA;
l.OA;
l.OA;
3.0A;
3.0A;
3.0A;

20V;
30V;
40V;
20V;
30V;
40V;

Sim. to
Sim. to
Sim. to
5im. to
Sim. to
Sim. to

00-41
00-41
00-41
00-201AO
00-201AO
00-201AO

IN6461,
IN6462,
IN6463,
IN6464,
IN6465,
IN6466,
1N6467,
1N6468,

J,
J,
J,
J,
J,
J,
J,
J,

JTX,
JTX,
JTX,
JTX,
JTX,
JTX,
JTX,
JTX,

JTXV
JTXV
JTXV
JTXV
JTXV
JTXV
JTXV
JTXV

5.0V
6.0V
12.0V
15.0V
24.0V
30.5V
40.3V
5l.6V

DIODE
1S44
1S111
1S113
1S120
1S121
lS130
1S131
1S132
1S134
1S920
1S92085
15921
1592185
lS922
1S92285
15923
1S92385
1S924
1S930
lS940
lS941
lS942
lS951
lS952
15953
15960
1S961
lS96185

75mA; 4OV; 00-35
400mA; 225V; 00-7
400mA; 400V; 00-7
200mA; 50V; 00-7
200mA; 150V; 00-7
300mA; 50V; 00-7
300mA; 100V; 00-7
300mA; 200V; 00-7
300mA; 400V; 00-7
200mA; 50V; 00-35
200mA; 50V; 00-35
200mA; 100V; 00-35
200mA; 100V; 00-35
200mA; 150V; 00-35
200mA; 150V; 00-35
200mA; 200V; 00-35
200mA; 200V; 00-35
200mA; 300V; 00-35
300mA; 50V; 00-35
50mA; 30V; 00-35
50mA; 50V; 00-35
50mA; 75V; 00-35
225mA; 70V; 00-35
225mA; 70V; 00-35
225mA; 70V; 00-35
150mA; 50V; 00-35
150mA; 150V; 00-35
150mA; 100V; 00-35

2N876
2N877
2N878
2N879

.35A@100·C
.35A@100·C
.35A@100·C
.35A@100·C

SCR
15V; TO-18
30V; TO-18
60V; TO-18
100V; TO-18

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-4

PRINTED IN U.S A

PART NUMBER INDEX

PAGE

··
···
··
··
··
··
··
·•
···
·
··
·•
···•
•
·
·
·
·

10-S
10-5
10-5
10-S
10-5
10-9
10-9
10-9
10-9
10-9
10-9
10-11
10-11
10-11
10-11
10-11

·

DESCRIPTION

PART NUMBER

PAGE

··
··
··
·

SCR
2N880
2N881
2N882
2N883
2N884
2N885
2N886
2N887
2N888
2N889
2N890
2N891
2N948
2N949
2N950
2N951
2N1595
2N1596
2N1597
2N1598
2N1599

.35A@100·C 150V; TO-18
.35A@100·C 200V; TO-18
.35A@100·C 300V; TO-18
.35A@100·C 400V; TO-18
.35A@100·C 15V; TO-18
.35A@100·C 30V; TO-18
.35A@100·C 60V; TO-18
.35A@100·C 100V; TO-18
.35A@100·C 150V; TO-18
.35A@100·C 200V; TO-18
.35A@100·C 300V; TO-18
.35A@100·C 400V; TO-18
.26A@125·C 30V; TO-18
.26A@125·C 60V; TO-18
.26A@125·C 100V; TO-18
.26A@125·C 200V; TO-18
1.0A@80·C 50V; TO-39
1.0A@80·C 100V; TO-39
1.0A@80·C 200V; TO-39
1.0A@80·C 300V; TO-39
1.0A@80·C 400V; TO-39

2N1647
2Nl648
2Nl649
2N1650
2Nl714
2N1715
2Nl716
2Nl717
2Nl718

NPN; 3.0A; 60V; TO-59
NPN; 3.0A; 80V; TO-59
NPN; 3.0A; 60V; TO-59
NPN; 3.0A; 80V; TO-59
NPN; 0.75A; 60V; TO-5
NPN; 0.75A; 100V; TO-5
NPN; 0.75A; 60V; TO-5
NPN; 0.75A; 100V; TO-5
NPN; 0.7SA; 60V; TO-5;
Stud Mount
NPN; 0.75A; 100V; TO-5;
Stud Mount
NPN; 0.75A; 60V; TO-S;
Stud Mount
NPN; 0.7SA; 100V; TO-5;
Stud Mount

POWER TRANSISTOR

2Nl719
2Nl720
2Nl721

4-11
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13
10-13

•

··
··
··
··
··
··
··
·••
·
·•
···
·
··
·•

SCR
2N1869
2N1870A,
2N1871A,
2N1872A,
2N1873A
2N1874A,
2N187S
2N1876
2N1877
2N1878
2N1879
2N1880
2Nl881
2N1882
2Nl883
2N1884
2N188S

J
J
J
J

1.2SA@100·C lSV; TO-9
1.25A@100·C 30V; TO-9
1.2SA@100·C 60V; TO-9
1.25A@100·C 100V; TO-9
1.25A@100·C 150V; TO-9
1.25A@100·C 200V; TO-9
1.2SA@100·C lSV; TO-9
1.2SA@100·C 30V; TO-9
1.25A@100·C 60V; TO-9
1.25A@100·C 100V; TO-9
1.2SA@100·C lS0V; TO-9
1.2SA@100·C 200V; TO-9
1.0A@100·C 30V; TO-9
1.0A@100·C 60V; TO-9
1.0A@100·C 100V; TO-9
1.0A@100·C lS0V; TO-9
1.0A@100·C 200V; TO-9

4-15

POWER TRANSISTOR
2N1886

•

NPN; 3.0A; TO-59

DESCRIPTION

PART NUMBER
SCR
2N2009
2N201O
2N2011
2N2012
2N2013
2N2014

1.3A@80·C 25V; TO-39
1.3A@80·C 50V; TO-39
1.3A@80·C 100V; TO-39
1.3A@80·C 200V; TO-39
1.3A@80·C 300V; TO-39
1.3A@80·C 400V; TO-39

2N2150
2N2151 J, JTX

NPN; 2.0A; 80V; TO-59
NPN; 2.0A; 80V; TO-59

POWER TRANSISTOR
SCR
2N2322
2N2323
2N2323, SJ, SJTX, SJTXV
2N2323A, SJ, SJTX, SJTXV
2N2324, SJ, SJTX, SJTXV
2N2324A, SJ,SJTX, SJTXV
2N2325
2N2325A
2N2326, SJ, SJTX, SJTXV
2N2326A, SJ, SJTX, SJTXV
2N2327
2N2327A
2N2328, SJ, SJTX, SJTXV
2N2328A, SJ, SJTX, SJTXV
2N2329, SJ, SJTX, SJTXV
2N2344
2N234S
2N2346
2N2347
2N2348

1.6A@85·C 25V; TO-39
1.6A@85·C 50V; TO-39
1.6A@85·C 50V; TO-39
1.6A@85·C 50V; TO-39
1.6A@85·C 100V; TO-39
1.6A@85·C 100V; TO-39
1.6A@85·C 150V; TO-39
1.6A@85·C 150V; TO-39
1.6A@85·C 200V; TO-39
1.6A@85·C 200V; TO-39
1.6A@85·C 250V; TO-39
1.6A@85·C 250V; TO-39
1.6!'.@85·C 300V; TO-39
1.6A@85·C 300V; TO-39
1.6A@85·C 400V; TO-39
1.6A@5S·C 25V; TO-39
1.6A@55·C SOV; TO-39
1.6A@55·C 100V; TO-39
1.6A@5S·C 150V; TO-39
1.6A@55·C 200V; TO-39

2N26S7
2N2658

NPN; 5.0A; 60V; TO-5
NPN; S.OA; 80V; TO-S

2N2679
2N2680
2N2681
2N2682
2N2683
2N2684
2N2685
2N2686
2N2687
2N2688
2N2689
2N2690

.35A@55·C 30V; TO-18
.35A@SS·C 60V; TO-18
.3SA@S5·C 100V; TO-18
.3SA@SS·C200V; TO-18
.28A@55·C 30V; TO-18
.28A@5S·C60V; TO-18
.28A@5S·C 100V; TO-18
.28A@SS·C 200V; TO-18
.28A@55·C 30V; TO-18
.28A@SS·C 60V; TO-18
.28A@SS·C 100V; TO-18
.28A@S5·C 200V; TO-18

2N2828
2N2829
2N2858
2N2859
2N2877,2N2878
2N2879
2N2880, J, JTX, JTXV
2N2890,2N2891
2N2892, 2N2893
2N2983
2N2984
2N2985

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

POWER TRANSISTOR
SCR

POWER TRANSISTOR
3A;
3A;
3A;
3A;
SA;
SA;
5A;
SA;
SA;
3A;
3A;
3A;

60V; TO-S9
60V; TO-59
80V; TO-S
100V; TO-5
80V; TO-S9
100V; TO-S9
80V; TO-S9
80V; TO-S
80V; TO-S9
80V; TO-5
120V; TO-S
80V; TO-5

• Contact Unitrode
legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-5

PRINTED IN USA

a

PART NUMBER INDEX

PAGE

··
··•
•
•
•
•

··•
··
··
·

10-16
10-16
10-16
10-16
10-16
10-16

•
•
•

·

4-19
4-19
4-19
4-19

·••
·•
···
·••
·•
··
·•
·
··
··•
··

4-15

4-23
4-23
4-23
4-23

PART NUMBER

DESCRIPTION

PAGE

POWER TRANSISTOR
2N29S6
2N29S7
2N29SS
2N29S9
2N2990
2N299l
2N2992
2N2993
2N2994, 2N2995

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

3A;
lA;
lA;
lA;
lA;
lA;
lA;
lA;
lA;

2N300l
2N3002
2N3003
2N3004
2N3005
2N3006
2N3007

.25A@55'C 30V; TO-IS
.25A@55'C 60V; TO-IS
.25A@55'C 100V; TO-IS
.25A@55'C 200V; TO-IS
.25A@55'C 30V; TO-IS
.25A@55'C 60V; TO-IS
.25A@55'C 100V; TO-IS
.25A@55'C200V; TO-IS
500mA@lOO'C 30V; TO-IS
500mA@lOO'C 60V; TO-IS
500mA@100'C lOOV; TO-IS
.5A@lOO'C 30V; TO-IS
.5A@100'C 60V; TO-18
.5A@100·C lOOV; TO-IS
2.2A@S5'C lOOV; TO-39
2.2A@S5'C 200V; TO-39
2.2A@85'C 300V; TO-39
2.2A@S5'C 400V; TO-39

•
•
•

l20V; TO-5
SOV; TO-5
100V; TO-5
SOV; TO-5
100V; TO-5
SOV; TO-5 Stud
100V; TO-5 Stud
SOV; TO-5 Stud
lOOV; TO-5 Stud

··•
··•
··•
·•

SCR

2N~OOS

2N:.027,
. 2Nj02S,
2N3029,
2N3030,
2N303l,
2N3032,
2N3273
2N3274
2N3275
2N3276

J,
J,
J,
J,
J,
J,

JTX
JTX
JTX
JTX
JTX
JTX

4-27

•
•

··
··
··
•

POWER TRANSISTOR
2N34lS,
2N34l9,
2N3420,
2N342l,
2N3445
2N3445
2N3447
2N344S
2N3469

J,
J,
J,
J,

JTX,
JTX,
JTX,
JTX,

JTXV
JTXV
JTXV
JTXV

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

3.0A;
3.0A;
3.0A;
3.0A;
7.5A;
7.5A;
7.5A;
7.5A;
5.0A;

60V;
SOV;
60V;
SOV;
60V;
SOV;
60V;
SOV;
25V;

•

TO-5
TO-5
TO-5
TO-5
TO-3
TO-3
TO-3
TO-3
TO-5

4-31
4-31

•
•
•
•

·
··
··
·

SCR
2N3555
2N3556
2N3557
2N355S
2N3559
2N3560
2N3561
2N3562

l.6A;
l.6A;
l.6A;
l.6A;
l.6A;
l.6A;
l.6A;
l.6A;

2N3744
2N3745
2N3746
2N3747
2N374S
2N3749,
2N3750
2N375l
2N3752
2N3S50
2N3S5l
2N3S52
2N3S53
2N3996,
2N3997,
2N399S,
2N3999,

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

30V; TO-39
60V; TO-39
100V; TO-39
200V; TO-39
30V; TO-39
60V; TO-39
lOOV; TO-39
200V; TO-39

4-35
4-35
4-37
4-37
4-39
4-39
4-39
4-39
4-44
4-44
4-44
4-44
4-49
4-49

POWER TRANSISTOR

J, JTX, JTXV

J,
J,
J,
J,

JTX,
JTX,
JTX,
JTX,

JTXV
JTXV
JTXV
JTXV

5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;
5.0A;

40V;
60V;
SOV;
40V;
60V;
80V;
4OV;
60V;
SOV;
SOV;
SOV;
40V;
4OV;
SOV;
80V;
SOV;
SOV;

TO-lll
TO-lll
TO-Ill
TO-Ill
TO-Ill
TO-Ill
TO-Ill
TO-Ill
TO-Ill
TO-59
TO-59
TO-59
TO-59
TO-lll
TO-Ill
TO-59
TO-59

PART NUMBER

DESCRIPTION
POWER TRANSISTOR

2N4000
2N400l
2N4070
2N4075
2N4076

NPN;
NPN;
NPN;
NPN;
NPN;

2N41OS
2N4l09
2N4110
2N4l44
2N4l45
2N4l46
2N4l47
2N4l4S
2N4l49

lSOmA@25'C 50V; TO-IS
lSOmA@25'C 100V; TO-IS
l80mA@25'C200V; TO-IS
250mA@75'C l5V; TO-IS
250mA@75'C30V; TO-IS
250mA@75'C60V; TO-18
250mA@75'C 100V; TO-18
250mA@75'C l50V; TO-IS
250mA@75'C 200V; TO-IS

2N4l50, J, JTX, JTXV

NPN; 1O.OA; 70V; TO-5

l.OA; SOV; TO-5
l.OA; 100V; TO-5
1O.OA; lOOV; TO-3
3.0A; SOV; TO-lll
3.0A; SOV; TO-lll

SCR

POWER TRANSISTOR
SCR
2N42l2
2N42l3
2N42l4
2N42l5
2N42l6
2N42l7
2N42lS
2N42l9

l.OA@85'C
l.OA@S5'C
l.OA@S5'C
l.OA@S5'C
l.OA@S5·C
l.OA@S5'C
l.OA@S5'C
l.OA@S5'C

2N4237-2N4239
2N4300
2N503S, J, JTX, JTXV
2N5039, J, JTX, JTXV
2N5074-2N5075
2N5076-2N5077
2N5334
2N5335
2N5336-2N5337
2N533S-2N5339
2N5346-2N5347
2N534S-2N5349
2N5477-2N547S
2N5479-2N5480
2N5552
2N5552-4
2N565S
2N5659
2N5660, J, JTX, JTXV
2N566l, J, JTX, JTXV
2N5662, J, JTX, JTXV
2N5663, J, JTX, JTXV
2N5664, J, JTX, JTXV
2N5665, J, JTX, JTXV
2N5666, J, JTX, JTXV
2N5667, J, JTX, JTXV
2N5671
2N5672

NPN; l.OA
NPN; 2.0A
NPN; 20.0A; l50V; TO-3
NPN; 20.0A; l20V; TO-3
NPN; 3A; 200V; TO-59
NPN; 3A; 250V; TO-59
NPN; 3A; 60V; TO-39
NPN; 3A; SOV; TO-39
NPN; 5A; SOV; TO-39
NPN; 5A; lOOV; TO-39
NPN; 7A; SOV; TO-59
NPN; 7A; 100V; TO-59
NPN; 7A; SOV; TO-59
NPN; 7A; lOOV; TO-59
NPN; lOA; SOV; TO-5
NPN; lOA; SOV; TO-5 (Stud)
NPN; 20A; SOV; TO-59
NPN;20A;80V;TO-lll
NPN; 3A; 200V; TO-66
NPN; 3A; 300V; TO-66
NPN; 3A; 200V; TO-5
NPN; 3A; 300V; TO-5
NPN; 5A; 200V; TO-56
NPN; 5A; 300V; TO-66
NPN; 5A; 200V; TO-5
NPN; 5A; 300V; TO-5
NPN; 30A; l20V; TO-3
NPN; 30A; 150V; TO-3

25V; TO-39
50V; TO-39
lOOV; TO-39
l50V; TO-39
200V; TO-39
250V; TO-39
300V; TO-39
400V; TO-39

POWER TRANSISTOR

SCR
10-22
10-22
10-22
10-22
10-22

2N5724
2N5725
2N5726
2N5727
2N572S

l.6A@85'C
l.6A@S5'C
l.6A@S5'C
l.6A@S5'C
l.6A@S5·C

4-53
4-53

2N5S3S
2N5839

NPN; 3A; 275V; TO-3
NPN; 3A; 300V; TO-3

60V; TO-39
100V; TO-39
200V; TO-39
300V; TO-39
400V; TO-39

POWER TRANSISTOR

• Contact Unitrode
legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-6

PRINTED IN U.S Ii.

PART NUMBER INDEX

pAGE

DESCRIPTION

PART NUMBER

PAGE

POWER MOSFET
TRANSISTOR

POWER TRANSISTOR
4-53

•

2N5840
2N6077
2N6078

NPN; 3A; 375V; TO-3
NPN;7A;300V;TO-66
NPN; 7A; 275V; TO-66

10-26
10-26
10-30

2N6119
2N6120
2N6137

400mW@25·C 40V; TO-18
400mW@<'5·C 40V; TO-18
300mW@25·C 40V; TO-18

4-110
4-114
4-114
4-118
4-118
4-122

POWER TRANSISTOR
2N6233
2N6234
2N6235
2N6249
2N6250
2N6251
2N6306, J, JTX JTXV
2N6307
2N6308, J, JTX, JTXV

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

4-122

2N6764, J, JTX, JTXV

4-126

2N6765

4-126

2N6766, J, JTX, JTXV

2N6332
2N6333
2N6334
2N6335
2N6336
2N6337

2.0A@80·C
2.0A@80·C
2.0A@80·C
2.0A@80·C
2.0A@80·C
2.0A@80·C

·
•

··

4-57
4-57
4-57
4-61
4-61
4-61

•

··
··
·

PUT

5A; 225V; TO-66
5A; 275V; TO-66
5A; 325V; TO-66
lOA; 300V; TO-3
lOA; 375V; TO-3
lOA; 450V; TO-3
8.0A; 500V; TO-3
8.0A; 600V; TO-3
8.0A; 700V; TO-3
30V; TO-39
50V; TO-39
100V; TO-39
200V; TO-39
300V; TO-39
400V; TO-39

POWER DARLINGTON
2N6350,
2N6351,
2N6352,
2N6353,

J,
J,
J,
J,

JTX,
JTX,
JTX,
JTX,

JTXV
JTXV
JTXV
JTXV

4-70
4-70
4-74
4-74
4-74
4-74
4-74
4-78
4-78
4-82
4-82
4-86
4-86

4-90
4-90
4-90
4-94
4-94
4-98
4-102
4-98
4-98
4-102

2N6354
2N6496
2N6510
2N6511
2N6512
2N6513
2N6514
2N6542
2N6543
2N6544
2N6545
2N6546,
2N6547,
2N6579
2N6580
2N6581
2N6582
2N6583
2N6584
2N6671
2N6672
2N6673
2N6674
2N6675
2N6676
2N6676,
2N6677
2N6678
2N6678,

4-106
4-106
4-110

2N6755
2N6756, J, JTX, JTXV
2N6757

NPN;
NPN;
NPN;
NPN;

10.0A; 80V; TO-33
10.0A; 150V; TO-33
10.0A; 80V; TO-66
1O.OA; 150V; TO-66

POWER TRANSISTOR

···
···

J, JTX, JTXV
J, JTX, JTXV

J, JTX, JTXV
J, JTX, JTXV

NPN; 10.0A; 150V; TO-3
NPN; 15.0A; 150V; TO-3
NPN; 7.0A; 250V; TO-3
NPN; 7.0A; 300V; TO-3
NPN; 7.0A; 350V; TO-3
NPN; 7.0A; 400V; TO-3
NPN; 7.0A; 350V; TO-3
NPN; 5A; 650V; TO-3
NPN; 5A; 850V; TO-3
NPN; 8.0A; 650V; TO-3
NPN; 8.0A; 850V; TO-3
NPN; 15A; 650V; TO-3
NPN; 15A; 850V; TO-3
NPN; lOA; 350V; TO-3
NPN; lOA; 400V; TO-3
NPN; lOA; 450V; TO-3
NPN; lOA; 350V; TO-3
NPN; lOA; 400V; TO-3
NPN; lOA; 450V; TO-3
NPN; 8A; 450V; TO-3
NPN; 8A; 550V; TO-3
NPN; 8A; 650V; TO-3
NPN; lOA; 450V; TO-3
NPN; lOA; 650V; TO-3
NPN; 15A; 450V; TO-3
NPN; 15A; 450V; TO-3
NPN; 15A; 550V; TO-3
NPN; 15A; 650V; TO-3
NPN; 15A; 650V; TO-3

POWER MOSFET
TRANSISTOR
12A; 60V; 0.250; TO-3
14A; 100V; 0.180; TO-3
8A; 150V; 0.60; TO-3

2N6758, J, JTX, JTXV
2N6759
2N6760, J, JTX, JTXV
2N6761
2N6762, J, JTX, JTXV
2N6763

4-130 2N6767
4-130 2N6768, J, JTX, JTXV
4-134 2N6769
4-134 2N6770, J, JTX, JTXV
4-138 2N6781
4-138 2N6782
4-144 .2N6783
4-144 2N6784
4-150 2N6785
4-150 2N6786
4-156 2N6787
4-156 2N6788
4-162 2N6789
4-162 2N6790
4-168 2N6791
4-168 2N6792
4-174 2N6793
4-174 2N6794
4-180 2N6795
4-180 2N6796
4-186 2N6797
4-186 2N6798
4-192 2N6799
4-192 2N6800
4-198 2N6801
4-198 2N6802

SCR

4-65
4·65
4-65
4-65

DESCRIPTION

PART NUMBER

9A; 200V; 0.40; TO-3
4.5A; 350V; l.50; TO-3
5.5A; 400V; l.00; TO-3
4A; 450V; 2.00; TO-3
4.5A; 500V; 1.50; TO-3
31A; 60V; 0.080;
TO-3 (Modified)
38A; 100V; 0.0550;
TO-3 (Modified)
25A; 150V; 0.1200;
TO-3 (Modified)
30A; 200V; 0.0850;
TO-3 (Modified)
12A; 350V; O.4Q; TO-3
14A; 400V; 0.30; TO-3
11A; 450V; 0.50; TO-3
12A; 500V; 0.40; TO-3
3.5A; 60V; 0.60; TO-39
3.5A; 100V; 0.60; TO-39
2.25A; 150V; 1.50; TO-39
2.25A; 200V; l.50; TO-39
1.25A; 350V; 3.60; TO-39
1.25A; 400V; 3.60; TO-39
6.0A; 60V; 0.30; TO-39
6.0A; lOOV; 0.30; TO-39
3.5A; 150V; 0.80; TO-39
3.5A; 200V; 0.80; TO-39
2.0A; 350V; l.80; TO-39
2.0A; 400V; l.80; TO-39
l.5A; 450V; 3.00; TO-39
l.5A; 500V; 3.00; TO-39
8.0A; 60V; .180; TO-39
8.0A; lOOV; .180; TO-39
5.5A; 150V; 0.40; TO-39
5.5A; 200V; 0.40; TO-39
3.0A; 350V; l.00; TO-39
3.0A; 400V; l.00; TO-39
2.5A; 450V; l.50; TO-39
2.5A; 500V; l.50; TO-39

FULL WAVE BRIDGE
8-8
'8-8
8-8
8-10
8-10
8-10
8-12
8-12
8-12
8-12
8-12
8-12
8-14
8-14
8-14
8-14
8-14
8-14
8-14
8-14
8-12
8-12
8-12
8-12

469-1, J, JTX
469-2, J, JTX
469-3, J, JTX
483-1, JTX
483-2, JTX
483-3, JTX
673-1
673-2
673-3
673-4
673-5
673-6
673-7
673-7.5
673-8
673-8.5
673-9
673-10
673-11
673-12
676-1
676-2
676-3
676-4

1 ph;
1 ph;
1 ph;
3 ph;
3 ph;
3 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;

lOA; 200V
lOA; 400V
lOA; 600V
25.0A; 200V
25.0A; 400V
25.0A; 600V
l.5A; 100V
l.5A; 200V
l.5A; 300V
l.5A; 400V
l.5A; 500V
l.5A; 600V
0.6A; 1200V
0.5A; 1800V
O.4A; 2400V
0.3A; 3000V
0.2A; 3600V
.18A; 4200V
.16A; 4800V
.16A; 5000V
l.OA; 100V
l.OA; 200V
LOA; 300V
l. OA; 400V

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-7

PRINTED IN USA

..

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PAGE

8·12
8·12
8·14
8·14
8·14
8·14
8·14
8·14
8·14
8·14
8·17
8·17
8·17
8·17
8·17
8·17
8·20
8·20
8·20
8·20
8·20
8·20
8·20
8·20
8·20
8·20
8·20
8·20

676·5
676·6
676·12
676·18
676·24
676·30
676·36
676·42
676·48
676·50
678·1
678·2
678·3
678·4
678·5
678·6
679·1
679·2
679·3
679·4
679·5
679·6
680·1
680·2
680·3
680·4
680·5
680·6

1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;

8·23
8·23
8·23
8·23
8·23
8·23

681·1
681·2
681·3
681·4
681·5
681·6

15A; 100V
15A; 200V
15A;300V
15A;400V
15A; 500V
15A; 600V

8·17
8·17
8·17
8·17
8·17
8·17
8-20
8-20
8·20
8-20
8-20
8-20
8-20
8-20
8·20
8·20
8-20
8-20

682·1
682·2
682·3
682·4
682·5
682·6
683-1
683-2
683-3
683·4
683·5
683-6
684·1
684-2
684·3
684-4
684-5
684-6

3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;

7·13
7·13
7·13
7·13
7-13
7-13

688·10
688-12
688·15
688·18
688·20
688·25

lOkV
12kV
15kV
18kV
20kV
25kV

DOUBLER OR
CENTER·TAP

1 ph; LOA; 500V

1 ph; LOA; 600V
0.4A; 1200V
.35A; 1800V
.325A; 2400V
.25A; 3000V
.175A; 3600V
.15A; 4200V
.135A; 4800V
.125A; 5000V
25A; 100V
25A; 200V
25A; 300V
25A; 400V
25A; 500V
25A; 600V
25A; 100V
25A; 200V
25A; 300V
25A; 400V
25A; 500V
25A; 600V
lOA; 100V
lOA; 200V
lOA; 300V
lOA; 400V
lOA; 500V
lOA; 600V

DOUBLER OR
CENTER·TAP

FULL WAVE BRIDGE
20A; 100V
20A; 200V
20A; 300V
20A; 400V
20A; 500V
20A; 600V
20A; 100V
20A; 200V
20A; 300V
20A; 400V
20A; 500V
20A; 600V
lOA; 100V
lOA; 200V
lOA; 300V
lOA; 400V
lOA; 500V
lOA; 600V

RECTIFIER MODULE

DESCRIPTION

PART NUMBER

FULL WAVE BRIDGE
8·23
8·23
8·23
8·23
8·23
8·23

689·1
689·2
689·3
689·4
689·5
689·6

15A; 100V
15A;200V
15A;300V
15A;400V
15A;500V
15A;600V

8·17
8·17
8·17
8·17
8·17
8·17
8·17
8·17
8·17
8·17
8·17
8·17
8·25
8·25
8·25
8·25
8·25
8·25
8·25
8·25
8·25
8·25
8·25
8·25
8·27
8·27
8·27
8·27
8·27
8·27
8·27
8·27
8·27
8·27
8·27
8·27
8·29
8-29
8·29
8·29
8-29
8·29
8·29
8-29
8-32
8-32
8·32
8·32
8-32
8·32
8·32
8·32

695·1
695·2
695·3
695·4
695·5
695·6
696·1
696·2
696·3
696·4
696·5
696·6
697·1
697·2
697·3
697·4
697·5
697·6
698·1
698·2
698·3
698·4
698·5
698·6
700·1
700·2
700·3
700-4
700·5
700·6
701·1
701·2
701·3
701·4
701-5
701-6
800·1
800-2
800-3
800-4
801-1
801-2
801-3
801-4
802·1
802-2
802·3
802·4
803-1
803·2
803-3
803·4

3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;

8·35
8-35

804-1
804-2

20A;50V
20A; 100V

FULL WAVE BRIDGE
15A; 100V
15A; 200V
15A; 300V
15A; 400V
15A; 500V
15A; 600V
15A; 100V
15A; 200V
15A; 300V
15A; 400V
15A; 500V
15A; 600V
2.5A; 100V
2.5A; 200V
2.5A; 300V
2.5A; 400V
2.5A; 500V
2.5A; 600V
2.25A; 100V
2.25A; 200V
2.25A; 300V
2.25A; 400V
2.25A; 500V
2.25A; 600V
2.5A; 100V
2.5A; 200V
2.5A; 300V
2.5A; 400V
2.5A; 500V
2.5A; 600V
2.25A; 100V
2.25A; 200V
2.25A; 300V
2.25A; 400V
2.25A; 500V
2.25A; 600V
40A; 50V
40A; 100V
40A; 125V
40A; 150V
20A; 50V
20A; 100V
20A; 125V
20A; 150V
35A; 50V
35A; 100V
35A; 125V
35A; 150V
20A; 50V
20A; 100V
20A; 125V
20A; 150V

DOUBLER OR
CENTER·TAP

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

1-8

PRINTED IN USA

PART NUMBER INDEX

PAGE

DESCRIPTION

PART NUMBER

PAGE

··•
·•••
·••
··
··
·•
··
··
··•
·•
··
·••
··
··•
··
··
··
··•
··
··•
··
··
··
··
··
··
·•

DOUBLER DR
CENTER-TAP
8-35
8-35

804-3
804-4

20A; l25V
20A; l50V

10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-34
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37
10-37

AA100
AAlOl
AA102
AA103
AA104
AA107
AA108
AA109
AAllO
AAlll
AA1l4
AA1l5
AA1l6
AA1l7
AA1l8
A0100
A0101
AOl02
AOl03
AOl04
AOl07
A0108
A0109
AOllO
AOll1
A01l4
A0115
A01l6
A01l7
A01l8

0_5A@100°C 60V; TO-18
0_5A@100°C 100V; TO-18
0_5A@100°C 200V; TO-18
0_5A@100°C 300V; TO-18
0_5A@100°C400V; TO-18
0_5A@100°C 60V; TO-18
0_5A@100°C 100V; TO-18
0_5A@100°C 200V; TO-18
0_5A@100°C 300V; TO-18
0_5A@100°C 400V; TO-18
0_5A@100°C 60V; TO-18
O.5A@lOO°C 100V; TO-18
0_5A@100°C 200V; TO-18
0_5A@100°C 300V; TO-18
0_5A@100°C 400V; TO-18
1.6A@85°C 60V; TO-39
1.6A@85°C 100V; TO-39
1.6A@85°C 200V; TO-39
1.6A@85°C 300V; TO-39
1.6A@85°C 400V; TO-39
1.6A@85°C 60V; TO-39
1.6A@85°C 100V; TO-39
1.6A@85°C 200V; TO-39
1.6A@85°C 300V; TO-39
1.6A@85°C 400V; TO-39
1.6A@85°C 60V TO-39
1.6A@85°C 100V; TO-39
1.6A@85°C 200V; TO-39
1.6A@85°C 300V; TO-39
1.6A@85°C 400V; TO-39

BA1270
BA129
BA130

200mA; 100V; 00-35
225mA; 200V; 00-35
75mA; 35V; 00-35

BA150
BA151
BA152

0_5A@100°C 30V; TO-18
0_5A@100°C 60V; TO-18
0_5A@100°C 100V; TO-18

BA155
BA166
BA167W
BA180
BA181
BA209
BA2l9
BA220
BA221
BA3l7
BAVIO
BAV18
BAV19
BAV20
BAV21
BAW24
BAW25
BAW26
BAW27
BAW62
BAW75

100mA; 150V; 00-35
50mA; 20V; 00-35
50mA; 25V; 00-35
50mA; lOY; 00-35
50mA; 20V; 00-35
225mA; 100V; 00-35
100mA; 100V; 00-35
200mA; lOY; 00-35
200mA; 30V; 00-35
100mA; 30V; 00-35
300m A; 60V; 00-35
250mA; 60V; 00-35
250mA; l20V; 00-35
250mA; 180V; 00-35
250mA; 250V; 00-35
600mA; 50V; 00-35
600mA; 50V; 00-35
600mA; 75V; 00-35
600mA; 75V; 00-35
100mA; 75V; 00-35
300mA; 35V; 00-35

SCR

·•
·
··
·
··
··
·•
·•
·••
•
··••
··•
·•

DIODE

SCR

DIODE

•

DESCRIPTION

PART NUMBER
DIODE
BAW76
BAX12
BAX13
BAX16
BAX17
BAX81
BAX84
BAX92
BAYl8
BAYl9
BAY20
BAY21
BAY3l
BAY36
BAY4l
BAY42
BAY43
BAY44
BAY45
BAY46
BAY60
BAY71
BAY72
BAY73
BAY80

300mA; 75V; 00-35
400mA; 90V; 00-35
75mA; 50V; 00-35
200mA; 150V; 00-35
200mA; 200V; 00-35
350mA; 90V; 00-35
75mA; 50V; 00-35
75mA; 50V; 00-35
250mA; 60V; 00-35
250mA; 120V; 00-35
250mA; 180V; 00-35
250mA; 350V; 00-35
l5V; 00-35
100mA; 30V; 00-35
225mA; 40V; 00-35
225mA; 60V; 00-35
225mA; 80V; 00-35
250mA; 50V; 00-35
250mA; l50V; 00-35
250mA; 300V; 00-35
115mA; 25V; 00-35
75mA; 70V; 00-35
225mA; l25V; 00-35
225mA; l25V; 00-35
250mA; l50V; 00-35

POWER TRANSISTOR
BOY55
BOY56
BOY57
BOY58
BOY90
BOY90A
BOY9l
BOY92
BUR23
BUR24
BUSll
BUSllA
BUS12
BUS12A
BUS13
BUS13A
BUS14
BUS14A
Buno
BunOA
Bunl
Bun1A
BUV23
BUV24
BUV46
BUW24
BUW25
BUW26
BUW34
BUW35
BUW36
BUW42
BUW44
BUW45
BUW46
BUW8B
BUWBBA
BUXll
BUX12

NPN; 15A; 60V; TO-3
NPN; 15A; 120V; TO-3
NPN; 25A; 80V; TO-3
NPN; 25A; 125V; TO-3
NPN; l5A; 100V; TO-3
NPN; 15A; 100V; TO-3
N PN; 15A; 80V; TO-3
NPN; l5A; 6OV; TO-3
NPN; 30A; 325V; TO-3
NPN; 30A; 400V; TO-3
NPN; 5A; 400V; TO-3
NPN; 5A; 450V; TO-3
NPN; 8A; 400V; TO-3
NPN; SA; 450V; TO-3
NPN; 15A; 400V; TO-3
NPN; 15A; 450V; TO-3
NPN; 30A; 400V; TO-3
NPN; 30A; 450V; TO-3
NPN; 2A; 400V; TO-220
NPN; 2A; 450V; TO-220
NPN; 5A; 400V; TO-220
NPN; 5A; 450V; TO-220
NPN; 30A; 325V; TO-3
NPN; 20A; 400V; TO-3
NPN; 6A; 400V; TO-220
NPN; lOA; 350V; TO-3
NPN; lOA; 400V; TO-3
NPN; lOA; 450V; TO-3
NPN; lOA; 400V; TO-3
NPN; lOA; 400V; TO-3
NPN; lOA; 450V; TO-3
NPN; l5A; 400V; TO-3
NPN; 15A; 400V; TO-3
NPN; 15A; 400V; TO-3
NPN; 15A; 450V; TO-3
NPN; 6A; 375V; TO-220
NPN; 6A; 400V; TO-220
NPN; 20A; 200V; TO-3
NPN; 20A; 250V; TO-3

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-9

PRINTED IN USA

•

PART NUMBER INDEX

PAGE

•
•
•

··•
··
·•
··
··•
···
··
··
·•
·
·
·••
··
··
·••
··
·••
·
·••
•
•
•
•
•
•

·•
··
··

PART NUMBER

DESCRIPTION

PAGE

POWER TRANSISTOR

BUY69A
BUY69B
BUY69C

NPN; l5A; 325V; TO-3
NPN; lOA; 400V; TO-3
NPN; 30A; 325V; TO-3
NPN; 20A; 400V; TO-3
NPN; 30A; 90V; TO-3
NPN;20A; l25V;TO-3
NPN; l5A; 200V; TO-3
NPN; 12A; 250V; TO-3
NPN; lOA; 325V; TO-3
NPN; 8A; 400V; TO-3
NPN; 3_5A; 400V;' TO-3
NPN; 9A; 400V; TO-3
NPN; 9A; 45OV; TO-3
NPN; l5A; 400V; TO-3
NPN; 15A; 450V; TO-3
NPN; lOA; 400V; TO-3
NPN; lOA; 450V; TO-3
NPN; 6A; 400V; TO-3
NPN; 6A; 450V; TO-3
NPN; 2A; 400V; TO-220
NPN; 2A; 450V; TO-220
NPN; 6A; 350V; TO-3
NPN; 6A; 400V; TO-3
NPN; 6A; 45OV; TO-3
NPN; 30A; 400V;
TO-3 (Modified)
NPN; 30A; 450V;
TO-3 (Modified)
NPN; lOA; 400V; TO-3
NPN; lOA; 325V; TO-3
NPN; lOA; 200V; TO-3

BY401
BY402
BY403
BY404

500mA;
500mA;
500mA;
500mA;

BUXl3
BUXl4
BUX23
BUX24
BUX39
BUX40
BUX4l
BUX42
BUX43
BUX44
BUX46
BUX47
BUX47A
BUX48
BUX48A
BUX80
BUX8l
BUX82
BUX83
BUX84
BUX85
BUX97
BUX97A
BUX97B
BUX98
BUX98A

•
•
•

··•
··
···
··•
•
•
•
•
•

··
··
··
·•
·••
··
··
··
·
··
··
·•
··
·••
··•
··•
•

DIODE
50V; 00-7
lOOV; 00-7
200V; 00-7
400V; 00-7

SCHOTTKY RECTIFIER
BYS60-45
BYS75-20
BYS75-30
BYS75-45
BYV19-35
BYVI9-40
BYV19-45
BYV23-3511
BYV23-4511

60A; 45V;
75A; 20V;
75A; 30V;
75A; 45V;
12A; 35V;
l2A; 40V;
l2A; 45V;
75A; 35V;
75A; 45V;

BYV27-50
BYV27-100
BYV27-150
BYV28-50
BYV28-l00
BYV28-150
BYV28-200

2_5Ai
2.5A;
2.5A;
3_5A;
3.5A;
3_5A;
3.5A;

00-5
00-5
00-5
00-5
TO-220AC
TO-220AC
TO-220AC
00-5
00-5

RECTIFIER
50V
lOOV
150V
50V
lOOV
l50V
200V

SCHOTTKY RECTIFIER
BYV33-35
BYV33-40
BYV33-45

•
•
•

l6A; 35V; TO-220AB
l6A; 40V; TO-220AB
16A; 45V; TO-220AB

··
·•
·•

RECTIFIER
BYV79-50
BYV79-100
BYV79-150
BYV79-200
BYW27-50

~

l6A; 50V; TO-220AC
l6A; lOOV; TO-220AC
16A; 150V; TO-220AC
16A; 200V; TO-220AC
2.0A; 50V

PART NUMBER

DESCRIPTION
RECTIFIER

BYW27-100
BYW27-150
BYW27-200
BYW29-50
BYW29-100
BYW29-l50
BYW29-200
BYW31-50
BYW3l-100
BYW3l-l50
BYW5l-50
BYW5l-100
BYW5l-l50
BYW5l-200
BYW77-50
BYW77-100
BYW77-l50
BYW77-200
BYW78-50·
BYW78-100
BYW78-150
BYW78-200
BYW80-50
BYW80-100
BYW80-l50
BYW80-200
BYW8l-50
BYW8l-100
BYW81-150
BYW8l-200
Bffl93-5OI1
BYW93-l0011
BYW93-15OI1
BYW93-20011
BYW99-50
BYW99-100
BYW99-150

2_0A; 100V
2_0A; l50V
2_0A; 200V
7_0A; 50V; TO-220AC
7 _OA; lOOV; TO-220AC
7_0A; 150V; TO-220AC
7_0A; 200V; TO-220AC
25A; 50V; 00-4
25A; lOOV; 00-4
25A; 150V; 00-4
l6A; 50V; TO-220AB
l6A; lOOV; TO-220AB .
16A; 150V; TO-220AB
l6A; 200V; TO-220AB
30A; 50V; 00-4
30A; lOOV; 00-4
30A; l50V; 00-4
30A; 200V; 00-4
50A; 50V; 00-5
50A; lOOV; 00-5
50A; l50V; 00-5
50A; 200V; 00-5
7_0A; 50V; TO-220AC
7_0A; lOOV; TO-220AC
7.0A; 150V; TO-220AC
7.0A; 200V; TO-220AC
25A; 50V; 00-4
25A; l00V; 00-4
25A; 150V; 00-4
25A; 200V; 00-4
70A; 50V; 00-5
70A; lOOV; 00-5
70A; 150V; 00-5
70A; 200V; 00-5
30A; 50V; TO-3
30A; IOOV; TO-3
30A; 150V; TO-3

BZVl6C6V8
BZVl6C7V8
BZV16C8V2
BZVl6C9Vl
BZV16ClO
BZVl6Cll
BZVl6C12
BZVl6C13
BZVl6C15
BZV16Cl6
BZV16C18
BZVl6C20
BZV16C22
BZV16C24
BZVl6C27
BZVl6C30
BZVl6C33
BZVl6C36
BZV16C39
BZVl6C43
BZVl6C47
BZV16C5l
BZV16C56
BZVl6C62
BZV16C68
BZVl6C75
BZVl6C82

7%;3W
7%;3W
7%;3W
7%;3W
7%;3W
7%;3W
7%;3W
7%; 3W
7%;3W
7%; 3W
7%;3W
7%;3W
7%; 3W
7%; 3W
7%;3W
7%;3W
7%;3W
7%;3W
7%;3W
7%;3W
7%;3W
7%; 3W
7%; 3W
7%;3W
7%;3W
7%;3W
7%;3W

ZENERS

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-10

PRINTED IN USA

PART NUMBER INDEX

PAGE

··••
··
··

10-40
10-40
10-40
10-44
10-44
10-44
10-44
10-44
10-44
10-47
10-47

PART NUMBER

DESCRIPTION

CB200
CB201
CB202
CB203
CD200
CD201
CD202
CD203
GA100
GA101
GA102
GA200-GA200A
GA201-GA201A
GA300-GA300A
GA301-GA301A
GB200-GB200A
GB201-GB201A
GB300-GB300A
GB301-GB301A

0.5A@100'C 30V; TO-18
0.5A@100'C 60V; TO-18
0_5A@100'C 100V; TO-18
0.5A@100'C 200V; TO-18
1.6A@85'C 30V; TO-39
1.6A@85'C 60V; TO-39
1.6A@85'C 100V; TO-39
1.6A@85'C 200V; TO-39
400mA@100'C 30V; TO-18
400mA@100'C 60V; TO-18
400mA@100'C 80V; TO-18
60V; TO-18
100V; TO-18
60V; TO-18
100V; TO-18
60V; TO-59
100V; TO-59
60V; TO-59
100V; TO-59

HIGH VOLTAGE
RECTIFIER
7-15
7-15
7-15
7-15
7-15
7-15
7-15
7-15
7-15
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-19
7-19
7-19
7-19
7-19
7-19
7-19
7-19
7-21
7-21
7-21
7-21
7-21
7-21
7-21
7-21

PAGE

HAlO
HA15
HA20
HA25
HA30
HA40
HA50
HA75
HA100
HS10
HS15
HS20
HS25
HS30
HS40
HS50
HS75
HS100
HVElO (lN3643)
HVE15 (lN3644)
HVE20 (lN3645)
HVE25 (1 N3646)
HVE30 (lN3647)
HVE40 (1 N5181)
HVE50 (lN5182)
HVE75 (lN5183)
HVE100 (lN5184)
HVF2500
HVF5000
HVF7500
HVF10000
HVF12500
HVF15000
HVF20000
HVF25000
HVFS2500
HVFS5000
HVFS7500
HVFS10000
HVFS12500
HVFS15000
HVFS17500
HVFS20000

1.0kV
1.5kV
2.0kV
2.5kV
3.0kV
4_0kV
5_0kV
7.5kV
10kV
1.0kV
1.5kV
2.0kV
2.5kV
3.0kV
4.0kV
5.0kV
7.5kV
10kV
1.0kV
1.5kV
2.0kV
2.5kV
3.0kV
4.0kV
5.0kV
7.5kV
10kV
2.5kV
5.0kV
7.5kV
10kV
12.5kV
15kV
20kV
25kV
2.5kV
5.0kV
7_5kV
10kV
12.5kV
15kV
17.5kV
20kV

DESCRIPTION

PART NUMBER

HIGH VOLTAGE
RECTIFIER

SCR
7-23
7-23
7-23
7-23
7-23
7-23
7-23
7-25
7-25
7-25
7-25
7-25
7-25
7-25
7-27
7-27
7-27
7-27
7-27
7-27
7-27
7-27
7-27
7-29
7-29
7-29
7-29
7-29
7-29
7-29
7-29
7-31
7-31
7-31
7-31
7-31
7-31
7-31
7-31
7-31
7-15
7-15
7-15
7-15
7-15
7-15
7-15
7-15
7-15

HVH5000
HVH7500
HVH10000
HVH12500
HVH15000
HVH20000
HVH25000
HVHF5000
HVHF7500
HVHFlOOOO
HVHFl2500
HVHFl5000
HVHF20000
HVHF25000
HVHJ15K
HVHJ20K
HVHJ22.5K
HVHJ25K
HVHJ30K
HVHJ35K
HVHJ37.5K
HVHJ40K
HVHJ45K
HVHS2500
HVHS5000
HVHS7500
HVHS10000
HVHS12500
HVHS15000
HVHS17500
HVHS20000
HVJX15K
HVJX20K
HVJX22.5K
HVJX25K
HVJX30K
HVJX35K
HVJX37.5K
HVJX40K
HVJX45K
HVXlO
HVX15
HVX20
HVX25
HVX30
HVX40
HVX50
HVX75
HVX100

5.0kV
7.5kV
10kV
12.5kV
15kV
20kV
25kV
5.0kV
7.5kV
10kV
12.5kV
15kV
20kV
25kV
15kV
20kV
22_5kV
25kV
30kV
35kV
37.5kV
40kV
45kV
2.5kV
5.0k'l
7.5kV
10kV
12.5kV
15kV
17.5kV
20kV
15kV
20kV
22.5kV
25kV
30kV
35kV
37.5kV
40kV
45kV
1.0kV
1.5kV
2.0kV
2.5kV
3_0kV
4.0kV
5.0kV
7.5kV
lOkV

ID100
ID101
ID102
ID103
ID104
ID105
ID106
10200
ID201
ID202
10203
10300
ID301

0.5A@100'C 30V; TO-18
0_5A@100'C 60V; TO-18
0.5A@100'C 100V; TO-18
0.5A@100'C 150V; TO-18
0.5A@100'C 200V; TO-18
0.5A@100'C300V;TO-18
0.5A@100'C 400V; TO-18
1.6A@70'C 50V; TO-39
1.6A@70'C 100V; TO-39
1.6A@70'C 150V; TO-39
1.6A@70'C 200V; TO-39
1.6A@70'C 300V; TO-39
1.6A@70'C 400V; TO-39

SCR
10-50
10-50
10-50
10-50
10-50
10-50
10-50
10-53
10-53
10-53
10-53
10-53
10-53

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-11

PRINTED IN USA

II

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PAGE

7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33
7-33

KX15
KX20
KX25
KX30
KX40
KX50
KX60
KX80
KX100
KXS15
KXS20
KXS25
KXS30
KXS40
KXS50
KXS60
KXSBO
KXS100

l.5kV
2.0kV
2.5kV
3.0kV
4.0kV
5.0kV
6.0kV
8.0kV
10kV
l.5kV
2.0kV
2.5kV
3.0kV
4.0kV
5.0kV
6.0kV
8.0kV
lOkV

LINEAR INTEGRATED
CIRCUITS
3-7

L292

3-14

L293

3-14

L293E

3-21

L295

·••
··
·•
··•
··
··
5-4
5-4
5-4
5-4
5-4
5-4
5-8
5-8
5-8
5-8
5-8
5-8
5-12

2A; 35V, H-Bridge;
Power SIP
1A; 35V; 4 Channel
Push-Pull Driver;
"Batwing" Plastic Dip
1A; 35V; 4 Channel
Push-Pull Driver;
"Batwing" Plastic Dip
2.5A; 45V; Dual PWM
Solenoid Driver;
Power SIP

POWER TRANSISTOR
MJE13004
MJE13005
MJE13006
MJE13007
MJE13008
MJE13009

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

4A; 300V; TO-220AB
4A; 400V; TO-220AB
8A; 300V; TO-220AB
8A; 400V; TO-220AB
12A; 300V; TO-220AB
12A; 400V; TO-220AB

PHS51

60A; 45V; DO-5

POWER HYBRIDS
& MODULES
5-12
5-12
5-12
5-12
5-12
5-16
5-16
5-16
5-16
5-16
5-16
5-20
5-20
5-24
5-24
5-24
5-24
5-28
5-28
5-28

PIC646
PIC647
PIC655
PIC656
PIC657
PIC660
PIC661
PIC662
PIC670
PIC671
PIC672
PIC730
PIC740
PIC800
PIC801
PIC810
PIC811
PIC900B
PIC900C
PIC900D

15.0A; 80V (Pos.); TO-3
15.0A; 100V (Pos.); TO-3
15.0A; 60V (Neg.); TO-3
15.0A; 80V (Neg.); TO-3
15.0A; 100V (Neg.); TO-3
10.0A; 60V (Pos.); TO-66
1O.OA; 80V (Pos.); TO-66
10.0A; 100V (Pos.); TO-66
10.0A; 60V (Neg.); TO-66
10.0A; 80V (Neg.); TO-66
10.0A; 100V (Neg.); TO-66
30.0A; 30V (Pos.); TO-3
30.0A; 30V (Pos.); TO-3
8A; 350V (Pos.); TO-66
8A; 400V (Pos.); TO-66
8A; 350V (Neg.); TO-66
8A; 400V (Neg.); TO-66
5.0A; 6OV, 18 Pin Dip
5.0A; BOV. 18 Pin Dip
5.0A; 100V, 18 Pi n Dip

6-46
6-48

SD51
SD241

60A; 45V; DO-5
60A; 45V; TO-3

6-50
6-50
6-50
6-52
6-52
6-52
6-54
6-54
6-54
6-54
6-56
6-56
6-56
6-56

SES5001
SES5002
SES5003
SES5301
SES5302
SES5303
SES5401
SES5402
SES5403
SES5404
SES5501
SES5502
SES5503
SES5504

2.0A; 50V
2.0A; 100V
2.0A; 150V
5.0A; 50V
5.0A; 100V
5.0A; 150V
8.0A; 50V; TO-220AC
8.0A; 100V; TO-220AC
8.0A; 150V; TO-220AC
8.0A; 200V; TO-220AC
16.0A; 50V; TO-220AC
16.0A; 100V; TO-220AC
16.0A; 150V; TO-220AC
16.0A; 200V; TO-220AC

6-59
6-59
6-59
6-59
6-61
6-61
6-61

SES5401C
SES5402C
SES5403C
SES5404C
SES5601C
SES5602C
SES5603C

16A;
16A;
16A;
16A;
25A;
25A;
25A;

6-63
6-63
6-63
6-65
6-65
6-65

SES5701
SES5702
SES5703
SES5801
SES5802
SES5803

20A;
20A;
20A;
60A;
60A;
60A;

8-42
8-42
8-42
8-42

SPA25,J
SPB25, J
SPC25, J
SPD25, J

1 ph;
1 ph;
1 ph;
1 ph;

SCHOTTKY RECTIFIER
RECTIFIER

RECTIFIER,
CENTER-TAP

SCHOTTKY RECTIFIER
RECTIFIER
PHS1001
PHSlO02
PHS1003
PHS2401
PHS2402
PHS2403
PHS2404

l.OA; 50V
l.OA; 100V
l.OA; 150V
16A; 50V; TO-220AB
16A; 100V; TO-220AB
16A; 150V; TO-220AB
16A; 200V; TO-220AB

POWER HYBRIDS
& MODULES
PIC600
PIC601
PIC602
PIC61O'
PIC611
PIC612
PIC625
PIC626
PIC627
PIC635
PIC636
PIC637
PIC645

5.0A; 60V (Pos.); TO-66
5.0A; 80V (Pos.); TO-66
5.0A; 100V (Pos.); TO-66
5.0A; 60V (Neg.); TO-66
5.0A; BOV (Neg.); TO-66
5.0A; 100V (Neg.); TO-66
15.0A; 60V (Pos.); TO-66
15.0A; 80V (Pos.); TO-66
15.0A; 100V (Pos.); TO-66
15.0A; 60V (Neg.); TO-66
15.0A; 80V (Neg.); TO-66
15.0A; 100V (Neg.); TO-66
15.0A; 60V (Pos.); TO-3

DESCRIPTION

PART NUMBER

HIGH VOLTAGE
RECTIFIER

50V; TO-220AB
100V; TO-220AB
150V; TO-220AB
200V; TO-220AB
50V; TO-3
100V; TO-3
150V; TO-3

RECTIFIER
50V; DO-4
100V; DO-4
150V; DO-4
50V; 00-5
100V; DO-5
150V; DO-5

FULL WAVE BRIDGE
25A;
25A;
25A;
25A;

100V
200V
400V
600V

HIGH VOLTAGE
RECTIFIER
7-35
7-35

SXlO
SX15

l.OkV
l.5kV

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-12

PRINTED IN USA

PART NUMBER INDEX

PAGE

DESCRIPTION

PART NUMBER

HIGH VOLTAGE
RECTIFIER
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35
7-35

SX20
SX25
SX30
SX40
SX50
SX60
SX80
SX100
SXS10
SXS15
SXS20
SXS25
SXS30
SXS40
SXS50
SXS60
SXSBO
SXSlOO

2_0kV
2.5kV
3.0kV
4.0kV
5.0kV
6.0kV
8.0kV
10kV
1.0kV
1.5kV
2.0kV
2.5kV
3.0kV
4.0kV
5.0kV
6.0kV
8.0kV
lOkV

PAGE

POWER DARLINGTON
4-204
4-204
4-204
4-204
4-206
4-206
4-206
4-206
4-208
4-208
4-208
4-210
4-210
4-210

0
0
0

··•
·
·•
0

0
0

•
•
•
0
0
0

•
•
•

·
0
0
0
0

·•

Too18
TD041
TD068
T01l7
T0129
T0153
T0176
T0190
T0190C
T0300
T0377
TD413G
TD414
TD473
T0474
TD475
T0482
T0785
T0789
T0789A
T0789B
TD791
TD809
TOS9l
T0893
T0905
TD922
TD993
T0996

SENSISTORft

13-4

TG 1/8

13-4

TM 1/8

9-14
9-14
9-14

1oomA; 50V; 00-35
1OOmA; 150V; 00-35
1oomA; 50V; 00-35
30mA; 30V; 00-35
1oomA; 50V; 00-35
250mA; 50V; 00-35
150mA; 200V; 00-35
250mA; 300V; 00-35
4oomA; 450V; 00-7
15mA; 15V; 00-35
50mA; lOV; 00-35
1SOmA; lOV; 00-35
50mA; 250V; 00-35
1l0mA; 20V; 00-35
1l0mA; 20V; 00-35
50mA; 20V; 00-35
3OOmA; 80V; 00-35
60mA; 35V; 00-35
60mA; 35V; 00-35
60mA; 45V; 00-35
60mA; 60V; 00-35
85mA; l5V; 00-35
200mA; 25V; 00-35
60mA; 85V; 00-35
150mA; 100V; 00-35
150mA; 100V; 00-35
100mA; 50V; 00-35
4oomA; 380V; 00-7
250mA; 380V; 00-35

TVS305-TVS360
TVS41 0-TVS430
TVS505-TVS528

3-25

U13n
U13T2

0

UC1l7K
UC120-05K

0

UC120-12K

•

UC120-15K

3-29

•

·•
3-32
3-25
3-29
3-32
3-25
3-25

·
0

UC137K
UCl40-05K
UC140-12K
UCl40-15K
UC150K
UC2l7K
UC237K
UC250K
UC317K
UC317T
UC320-05K
UC320-05T

0

UC320-12K

•

UC320-12T

0

UC320-15K

0

UC320-15T

3-29
3-29

UC337K
UC337T
UC340-05K

Hermetic 1I8W, Pos. Temp.
Coefficient Thermistor
Plastic 1/8W, Pos Temp.
Coefficient Thermistor

0

0

UC340-05T

TRANSIENT VOLTAGE
SUPPRESSOR

0

UC340-12K

0

UC340-12T

0

UC340-l5K

0

UC340-l5T

150W
150W
500W

PUT
10-55
10-55

U2nOl
U2n05
U2T201
U2T205
U2T301
U2T305
U2T401
U2T405
U2TA506
U2TA508
U2TA51O
U2TA606
U2TA608
U2TA61O

400mW@25°C 40V; TO-18
4oomW@25°C 40V; TO-18

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

lO_OA; 80V; TO-33
10.0A; 150V; TO-33
10.0A; 80V; TO-66
10.0A; 150V; TO-66
5.0A; 60V; TO-33
5.0A; 150V; TO-33
5.0A; 60V; TO-66
5.0A; 150V; TO-66
3.0A; 60V; TO-92
3.0A; 80V; TO-92
3.0A; 100V; TO-92
3.0A; 60V; TO-92
3.0A; 80V; TO-92
3.0A; 100V; TO-92

LINEAR INTEGRATED
CIRCUITS

DIODE
0

DESCRIPTION

PART NUMBER

3-32

UC350K

1.5A; TO-3; Pos Adj. Reg.
1.0A; -5V; TO-3;
Precision Fixed Reg.
1.0A; -12V; TO-3;
Precision Fixed Reg.
1.0A; -15V; TO-3;
Precision Fixed Reg.
1.5A; TO-3; Neg. Adj. Reg.
1.0A; +5V; TO-3;
Precision Fixed Reg.
1.0A; + 12V; TO-3;
Precision Fixed Reg.
1.0A; +15V; TO-3;
Precision Fixed Reg.
3.0A; TO-3; Pos. Adj. Reg.
1.5A; TO-3; Pos. Adj. Reg.
1.5A; TO-3; Neg. Adj. Reg.
3.0A; TO-3; Pos. Adj. Reg.
1.5A; TO-3; Pos. Adj. Reg.
1.5A; TO-220; Pos. Adj. Reg.
lAo -5V' TO-3'
Preci~ion Fi~ed Reg.
1A' -5V' TO-220'
Preci~ion Fixed Reg.
1A; -12V; TO-3;
Precision Fixed Reg.
1A; -12V; TO-220;
Precision Fixed Reg.
1A; -15V; TO-3;
Precision Fixed Reg.
1A; -15V; TO-220;
Precision Fixed Reg.
1.5A; TO-3; Neg. Adj. Reg.
1.5A; TO-220; Neg. Adj. Reg.
1A; +5V; TO-3;
Precision Fixed Reg.
1A; +5V; TO-220;
Precision Fixed Reg.
1A; + 12V; TO-3;
Precision Fixed Reg.
1A; + 12V; TO-220;
Precision Fixed Reg.
1A; + 15V; TO-3;
Precision Fixed Reg.
1A; + 15V; TO-220;
Precision Fixed Reg.
3A; TO-3; Pos. Adj. Reg.

• Contact Unit rode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-13

PRINTED IN U.S A

•

PART NUMBER INDEX

r--PAGE

··•
··
··•

PART NUMBER

DESCRIPTION

PAGE

PART NUMBER

FULL WAVE BRIDGE
UC3BA1
UC3BA2
UC3BA4
UC3BA6
UC3BA1F
UC3BA2F
UC3BA4F
UC3BA6F

3
3
3
3
3
3
3
3

ph;
ph;
ph;
ph;
ph;
ph;
ph;
ph;

25A;
25A;
25A;
25A;
20A;
20A;
20A;
20A;

100V
200V
400V
600V
100V
200V
400V
600V

LINEAR INTEGRATED
CIRCUITS

3-36

UC493AJ

3-36

UC493AN

3-36

UC494AJ

3-36

UC494AN

3-36

UC495AJ

3-36

UC495AN

3-36

UC493ACJ

3-36

UC493ACN

3-36

UC494ACJ

3-36

UC494ACN

3-36

UC495ACJ

3-36

UC495ACN

3-36

UC495BJ

3-36

UC495BN

3-36

UC495BCJ

3-36

UC495BCN

3-45

UC1524AJ

3-45

UC1524AN

3-40

UC1524J

3-40

UC1524N

3-49

UC1525AJ

3-49

UC1525AN

3-56

UC1526J

3-56

UC1526N

3-49

UC1527AJ

3-49

UC1527AN

3-62

UC1543J

40V; 200mA; Precision
PWM; Ceramic Dip
40V; 200mA; Precision
PWM; Plastic Dip
40V; 200mA; Precision
PWM; Ceramic Dip
40V; 200mA; Precision
PWM; Plastic Dip
40V; 200mA; Precision
PWM; Ceramic Dip
40V; 200mA; Precision
PWM; Plastic Dip
40V; 200mA; Precision
PWM; Ceramic Dip
40V; 200mA; Precision
PWM; Plastic Dip
40V; 200mA; Precision
PWM; Ceramic Dip
40V; 200mA; Precision
PWM; Plastic Dip
40V; 200mA; Precision
PWM; Ceramic Dip
40V; 200mA; Precision
PWM; Plastic Dip
Precision PWM wi Buffered
Output; Ceramic Dip
Precision PWM wi Buffered
Output; Plastic Dip
Precision PWM w/Buffered
Output; Ceramic Dip
Precision PWM w/Buffered
Output; Plastic Dip
60V; 200mA; Precision
PWM; Ceramic Dip
60V; 200mA; Precision
PWM; Plastic Dip
40V; 100mA; PWM;
Ceramic Dip
40V; 100mA; PWM;
Plastic Dip
40V; 500mA; Precision
PWM; Ceramic Dip
40V; 500mA; Precision
PWM; Plastic Dip
High Performance
PWM; Ceramic Dip
High Performance
PWM; Plastic Dip
40V; 500mA; Precision
PWM; Ceramic Dip
40V; 500mA; Precision
PWM; Plastic Dip
Power Supply Supervisory
Circuit; Ceramic Dip

DESCRIPTION
LINEAR INTEGRATED
CIRCUITS

3-62

UC1543N

3-62

UC1544J

3-62

UC1544N

3-66

UC1637J

3-66

UC1637N

3-74

UC1704J

3-74

UC1704N

3-7B

UC1706J

3-7B

UC1706N

3-B2

UC1717J

3-B2

UC1717NE

3-90

UC1B34J

3-90

UC1B34N

3-94

UC1B40J

3-94

UCl840N

3-102

UC1B42J

3-102

UC1B42N

3-10B

UC1B46J

3-lOB

UC1B46N

3-10B

UC1B47J

3-10B

UC1B47N

3-116

UC190lJ

3-116

UC1901N

3-120

UC1903J

3-120

UC1903N

3-45

UC2524AJ

3-45

UC2524AN

3-40

UC2524J

Power Supply Supervisory
Circuit; Plastic Dip
Power Supply Supervisory
Circuit; Ceramic Dip
Power Supply Supervisory
Circuit; Plastic Dip
500mA; 40V; PWM DC Servo
Motor Control Chip;
Ceramic Dip
500mA; 40V; PWM DC Servo
Motor Control Chip;
Plastic Dip
Bridge Transducer Switch;
-25"C to + 125"C;
Ceramic Dip
Bridge Transducer Switch;
-25"C to + 125"C;
Plastic Dip
Dual Output Driver;
Ceramic Dip
Dual Output Driver;
Plastic Dip
1A; 40V; Stepper Motor
Drive Circuit;
Ceramic Dip
1A; 40V; Stepper Motor
Drive Circuit;
Plastic Dip
High Efficiency
Linear Regulator;
Ceramic Dip
High Efficiency
Linear Regulator;
Plastic Dip
40V; 200mA; PWM
Controller; Ceramic Dip
40V; 200mA; PWM
Controller; Plastic Dip
Off-line Current
Mode PWM; Ceramic Dip
Off-line Current
Mode PWM; Plastic Dip
Current Mode PWM;
Ceramic Dip
Current Mode PWM;
Plastic Dip
Current Mode PWM;
Ceramic Dip
Current Mode PWM;
Plastic Dip
Isolated Feedback
Generator; Ceramic Dip
Isolated Feedback
Generator; Plastic Dip
Triple Voltage and Line
Monitor; Ceramic Dip
Triple Voltage and Line
Monitor; Plastic Dip
60V; 200mA; Precision
PWM; Ceramic Dip
60V; 200mA; Precision
PWM; Plastic Dip
40V- 100mA' PWM'
C~ramic Dip
,

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-14

PRINTED IN USA

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PART NUMBER

PAGE

LINEAR INTEGRATED
CIRCUITS
3-40

UC2524N

3-49

UC2525AJ

3-49

UC2525AN

3-56

UC2526J

3-56

UC2526N

3-49

UC2527AJ

3-49

UC2527AN

3-62

UC2543J

3-62

UC2543N

3-62

UC2544J

3-62

UC2544N

3-66

UC2637J

3-66

UC2637N

3-90

UC2834J

3-90

UC2834N

3-94

UC2840J

3-94

UC2840N

3-102

UC2842J

3-102

UC2842N

3-108

UC2846J

3-108

UC2846N

3-108

UC2847J

3-108

UC2847N

3-116

UC290lJ

3-116

UC2901N

3-120

UC2903J

3-120

UC2903N

3-45

UC3524AJ

3-45

UC3524AN

3-40

UC3524J

3-40

UC3524N

40V; 100mA; PWM;
Plastic Dip
40V; 500mA; Precision
PWM; Ceramic Dip
40V; 500mA; Precision
PWM; Plastic Dip
High Performance PWM;
Ceramic Dip
High Performance
PWM; Plastic Dip
40V; 500mA; Precision
PWM; Ceramic Dip
40V; 500mA; Precision
PWM; Plastic Dip
Power Supply Supervisory
Circuit; Ceramic Dip
Power Supply Supervisory
CircUit; Plastic Dip
Power Supply Supervisory
Circuit; Ceramic Dip
Power Supply Supervisory
Circuit; Plastic Dip
500mA; 40V; PWM DC Servo
Motor Control Chip;
Ceramic Dip
500mA; 40V; PWM DC Servo
Motor Control Chip;
Plastic Dip
High Efficiency Linear
Regulator; Ceramic Dip
High Efficiency Linear
Regulator; Plastic Dip
40V; 200mA; PWM
Controller; Plastic Dip
40V; 200mA; PWM
Controller; Ceramic Dip
Off-line Current Mode
PWM; Ceramic Dip
Off-line Current Mode
PWM; Plastic Dip
Current Mode PWM;
Ceramic Dip
Current Mode PWM;
Plastic Dip
Current Mode PWM;
Ceramic Dip
Current Mode PWM;
Plastic Dip
Isolated Feedback
Generator; Ceramic Dip
Isolated Feedback
Generator; Plastic Dip
Triple Voltage and Line
Monitor; Ceramic Dip
Triple Voltage and Line
Monitor; Plastic Dip
50V; 200mA; Precision
PWM; Ceramic Dip
50V; 200mA; Precision
PWM; Plastic Dip
40V' 100mA' PWM'
C~ramic Dip
,
40V; 100mA; PWM;
Plastic Dip

DESCRIPTION
LINEAR INTEGRATED
CIRCUITS

3-49

UC3525AJ

3-49

UC3525AN

3-56

UC3526J

3-56

UC3526N

3-49

UC3527AJ

3-49

UC3527AN

3-62

UC3543J

3-62

UC3543N

3-62

UC3544J

3-62

UC3544N

3-66

UC3637J

3-66

UC3637N

3-74

UC3704J

3-74

UC3704N

3-78

UC3706J

3-78

UC3706N

3-82

UC3717J

3-82

UC3717N

3-90

UC3834J

3-90

UC3834N

3-94

UC3840J

3-94

UC3840N

3-102

UC3842J

3-102

UC3842N

3-108

UC3846J

3-108

UC3846N

3-108

UC3847J

3-108

UC3847N

3-116

UC390lJ

3-116

UC3901N

40V; 500mA; Precision
PWM; Ceramic Dip
40V; 500mA; Precision
PWM; Plastic Dip
High Performance
PWM; Ceramic Dip
High Performance
PWM; Plastic Dip
40V; 500mA; Precision
PWM; Ceramic Dip
40V; 500mA; Precision
PWM; Plastic Dip
Power Supply Supervisory
Circuit; Ceramic Dip
Power Supply Supervisory
Circuit; Plastic Dip
Power Supply Supervisory
Circuit; Ceramic Dip
Power Supply Supervisory
Circuit; Plastic Dip
500mA; 40V; PWM DC Servo
Motor Control Chip;
Ceramic Dip
500mA; 40V; PWM DC Servo
Motor Control Chip;
Plastic Dip
Bridge Transducer Switch;
O°C to + 70°C; Ceramic Dip
Bridge Transducer Switch;
O°C to + 70°C; Plastic Dip
Dual Output Driver;
Ceramic Dip
Dual Output Driver;
Plastic Dip
1A; 40V; Stepper Motor
Drive Circuit;
Ceramic Dip
1A; 40V; Stepper Motor
Drive Circuit;
Plastic Dip
High Efficiency Linear
Regulator; Ceramic Dip
High Efficiency Linear
Regulator; Plastic Dip
40V; 200mA; PWM
Controller; Ceramic Dip
40V; 200mA; PWM
Controller; Plastic Dip
Off-line Current Mode
PWM; Ceramic Dip
Off-line Current Mode
PWM; Plastic Dip
Current Mode PWM;
Ceramic Dip
Current Mode PWM;
Plastic Dip
Current Mode PWM;
Ceramic Dip
Current Mode PWM;
Plastic Dip
Isolated Feedback
Generator; Ceramic Dip
Isolated Feedback
Generator; Plastic Dip

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-15

- - - - - - --- ._- ._.-._-- _.-

PRINTED IN USA

II

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PAGE

LINEAR INTEGRATED
CIRCUITS
3-120

UC3903J

3-120

UC3903N

3-133

UC7B05ACK

3-133

UC7B05ACT

3-133

UC7B05AK

3-133
3-127
3·127
3-133

UC7B05CK
UC7B05CT
UC7B05K
UC7B12ACK

3-133

UC7B12ACT

3·133

UC7B12AK

3-127
3-127
3-127
3-133

UC7B12CK
UC7B12CT
UC7B12K
UC7B15ACK

3-133

UC7B15ACT

3·133

UC7B15AK

3·127
3-127
3·127
3-145

UC7B15CK
UC7B15CT
UC7B15K
UC7905ACK

3-145

UC7905ACT

3-145

UC7905AK

3-139
3-139
3-139
3-145

UC7905CK
UC7905CT
UC7905K
UC7912ACK

3-145

UC7912ACT

3-145

UC7912AK

3-139
3-139
3-139
3-145

UC7912CK
UC7912CT
UC7912K
UC7915ACK

3-145

UC7915ACT

3-145

UC7915AK

3-139
3-139
3-139

UC7915CK
UC7915CT
UC7915K

··•
··

Triple Voltage and Line
Monitor; Ceramic Dip
Triple Voltage and Line
Monitor; Plastic Dip
1A; +5V; TO-3;
Precision Fixed Reg.
1A; +5V; TO-220;
Precision Fixed Reg.
1A; +5V; TO-3;
Precision Fixed Reg.
1A; +5V; TO-3; Fixed Reg.
1A; +5V; TO-220; Fixed Reg.
1A; +5V; TO·3; Fixed Reg.
1A' + 12V' TO-3'
Precisi~n Fix~d Reg.
1A; + 12V; TO-220;
Precision Fixed Reg.
1A + 12V' TO·3·
Precisi~n Fix~d Reg.
1A; + 12V; TO-3; Fixed Reg.
1A; + 12V; TO·220 Fixed Reg.
1A; + 12V; TO·3; Fixed Reg.
1A + 15V' TO·3·
Precisi~n Fix~d Reg.
1A; + 15V; TO·220;
Precision Fixed Reg.
1A + 15V' TO·3·
Precisi~n Fix~d Reg.
1A; + 15V; TO-3; Fixed Reg.
1A; + 15V; TO·220; Fixed Reg.
1A; + 15V; TO-3; Fixed Reg.
1A; -5V; TO-3;
Precision Fixed Reg.
1A; -5V; TO-220;
Precision Fixed Reg.
1A' -5V' TO-3'
Preci;ion Fi~ed Reg.
1A; -5V; TO-3; Fixed Reg.
1A; -5V; TO-220; Fixed Reg.
1A; -5V; TO-3; Fixed Reg.
1A' -12V' TO-3'
Precisi~n Fix~d Reg.
1A; -12V; TO-220;
Precision Fixed Reg.
1A' -12V' TO-3'
Precisi~n Fix~d Reg.
1A; -12V; TO-3; Fixed Reg.
1A; -12V; TO-220 Fixed Reg.
1A; -12V; TO-3; Fixed Reg.
1A' -15V' TO-3'
Precisi~n Fix~d Reg.
1A; -15V; TO-220;
Precision Fixed Reg.
1A -15V- TO-3'
Precisi~n Fix~d Reg.
1A; -15V; TO-3; Fixed Reg.
1A; -15V; TO-220; Fixed Reg.
1A; -15V; TO-3; Fixed Reg.

FULL WAVE BRIDGE
UCBA1
UCBA2
UCBA4
UCBA6
UCBA1F

1
1
1
1
1

ph;
ph;
ph;
ph;
ph;

25A; 100V
25A; 200V
25A,400V
25A; 600V
20A; 100V

··
·••
··
··
··
··•
···
···
··••
··
··•
··
··
··

DESCRIPTION

PART NUMBER

FULL WAVE BRIDGE
UCBA2F
UCBA4F
UCBA6F
UCBHM1
UCBHM2
UCBHM4
UCBHM6
UCBHM1F
UCBHM2F
UCBHM4F
UCBHM6F

1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;

20A;
20A;
20A;
lOA;
lOA;
lOA;
lOA;
lOA;
lOA;
lOA;
lOA;

200V
400V
600V
100V
200V
400V
600V
100V
200V
400V
600V

DOUBLER OR
CENTER·TAP
UCDA1
UCDA2
UCDA4
UCDA6
UCDA1F
UCDA2F
UCDA4F
UCDA6F
UCNA1
UCNA2
UCNA4
UCNA6
UCNA1F
UCNA2F
UCNA4F
UCNA6F
UCPA1
UCPA2
UCPA4
UCPA6
UCPA1F
UCPA2F
UCPA4F
UCPA6F

15A; 100V
15A;200V
15A;400V
15A;600V
15A; 100V
15A;200V
15A;400V
15A;600V
15A; 100V
15A;200V
15A;400V
15A;600V
15A; 100V
15A;200V
15A;400V
15A;600V
15A; 100V
15A; 200V
15A;400V
15A;600V
15A; 100V
15A;200V
15A;400V
15A; 600V

7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37
7-37

UDA5
UDA7.5
UDAlO
UDA15
UDB2.5
UDB5
UDB7.5
UDC5
UDC7.5
UDC10
UDC15
UDD2.5
UDD5
UDD7.5
UDE2.5
UDE5
UDF2.5
UDF5

5.0kV
7.5kV
10kV
15kV
2.5kV
5.0kV
7.5kV
5.0kV
7.5kV
lOkV
15kV
2.5kV
5.0kV
7.5kV
2.5kV
5.0kV
2.5kV
5.0kV

9-1B
9-1B
9-1B
9-1B
9-1B
9-1B

UDZ707-UDZ790
UDZB07-UDZB90
UDZ5707-UDZ5790
UDZ5B07-UDZ5B90
UDZB707-UDZB791
UDZB807-UDZBB91

RECTIFIER MODULE

ZENER
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional

3W;
3W;
5W;
5W;
1W;
1W;

5%
10%
5%
10%
5%
10%

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-16

PRINTED IN USA

PART NUMBER INDEX

PAGE

DESCRIPTION

PART NUMBER

PAGE

6·24
6·24
6·24
6·24
6·24
6·24
6·24
6·24

··•
·

6·67
6·67
6·67
6·67
6·67
6·70
6·70
6·70
6·72
6·72
6·72
6·75
6·75
6·75
6·78
6·78
6·78
6·81
6·81
6·81
6·83
6·83
6·83
6·86
6·86
6·86
6·89
6·89
6·89
6·92
6·92
6·92
6·95
6·95
6·95
6·95
6·98
6·98
6·98
6·98

UES101 (lN5802)
UES102 (lN5803)
UES103 (lN5804)
UES104 (lN5805)
UES201 (lN5807)
UES202 (lN5808)
UES203 (lN5809)
UES204 (lN581O)
UES301
UES302
UES303
UES304
UES501
UES502
UES503
UES504
UES505
UES701
UES702
UES703
UES704
UES705
UES706
UES801
UES802
UES803
UES804
UES805
UES806
UESlO01
UESlO02
UESlO03
UES1101
UES1102
UES1103
UES1104
UES1105
UES1106
UES1301
UES1302
UES1303
UES1304
UES1305
UES1306
UES1401
UES1402
UES1403
UES1404
UES1501
UES1502
UES1503
UES1504

2.5A; 50V
2.5A; 75V
2.5A; 100V
2.5A; 125V
6.0A; 50V
6.0A; 75V
6.0A; 100V
6.0A; 125V
20.0A; 50V
20.0A; 75V
20.0A; 100V
20.0A; 125V
50.0A; 50V; 00·5
50.0A; 75V; 00·5
50.0A; 100V; 00·5
50.0A; 125V; 00·5
50.0A; 150V; 00·5
25.0A; 50V; 00·4
25.0A; 100V; 00·4
25.0A; 150V; 00·4
20.0A; 200V; OOA
20.0A; 300V; 00·4
20.0A; 400V; 00·4
70.0A; 50V; 00·5
70.0A; 100V; 00·5
70.0A; 150V; 00·5
50.0A; 200V; 00·5
50.0A; 300V; 00·5
50.0A; 400V; 00·5
1A; 50V
1A; 100V
1A; 150V
2.5A; 50V
2.5A; 100V
2.5A; 150V
2.0A; 200V
2.0A; 300V
2.0A; 400V
6.0A; 50V
6.0A; 100V
6.0A; 150V
5.0A; 200V
5.0A; 300V
5.0A; 400V
8.0A; 50V; TO·220AC
8.0A; 100V; TO·220AC
8.0A; 150V; TO·220AC
8.0A; 200V; TO·220AC
16A; 50V; TO·220AC
16A; 100V; TO·220AC
16A; 150V; TO·220AC
16A; 200V; TO·220AC

RECTIFIER,
CENTER·TAP
6·101
6·101
6·101
6·101
6·104
6·104
6·104
6·107
6·107
6·107

UES2401
UES2402
UES2403
UES2404
UES2601
UES2602
UES2603
UES2604
UES2605
UES2606

16A;
16A;
16A;
16A;
30A;
30A;
30A;
30A;
30A;
30A;

50V; TO·220AB
100V; TO·220AB
150V; TO·220AB
200V; TO·220AB
50V; TO·3
100V; TO·3
150V; TO·3
200V; TO·3
300V; TO·3
400V; TO·3

DESCRIPTION

PART NUMBER

RECTIFIER MODULE

RECTIFIER
7·41
7·41
7·41

UFB2.5
UFB5
UFB7.5

4·212
4·212
4·214
4·214
4·220
4·220
4·226
4·226
4·232
4·232
4·238
4·238
4·238
4·238
4·244
4·244
4·244
4·244
4·250
4·250
4·250
4·250
4·256
4·256
4·256
4·256
4·262
4·262
4·262
4·262
4·268
4·268
4·268
4·268
4·274
4·274
4·274
4·274
4·280
4·280
4·280
4·280
4·286
4·286
4·286
4·286
4·292
4·292
4·292
4·292
4·298
4·298
4·298
4·298
4·304
4·304
4·304
4·304
4·310

UFNAll
UFNA12
UFN01Z0
UFNDlZ3
UFNOllO
UFN01l3
UFN0120
UFN0123
UFN0210
UFN0213
UFNFl10
UFNFlll
UFNF1l2
UFNF113
UFNFl20
UFNFl21
UFNFl22
UFNFl23
UFNFl30
UFNFl31
UFNFl32
UFNFl33
UFNF210
UFNF211
UFNF212
UFNF213
UFNF220
UFNF221
UFNF222
UFNF223
UFNF230
UFNF231
UFNF232
UFNF233
UFNF310
UFNF311
UFNF312
UFNF313
UFNF320
UFNF321
UFNF322
UFNF323
UFNF330
UFNF331
UFNF332
UFNF333
UFNF420
UFNF421
UFNF422
UFNF423
UFNF430
UFNF431
UFNF432
UFNF433
UFN120
UFN121
UFN122
UFN123
UFN130

2.5kV
5.0kV
7.5kV

POWER MOSFET
TRANSISTOR
LOA; 60V; 1.50; TO·92
LOA; 100V; 1.50; TO·92
0.5A; 100V; 2.40; OILA
0.4A; 60V; 3.20; 01L·4
LOA; 100V; 0.60; OILA
0.8A; 60V; 0.80; 01L·4
1.3A; 100V; 0.30; 01L·4
l.lA; 60V; 0.40; 01L·4
0.6A; 200V; 1.50; 01L·4
0.45A; 150V; 2.40; 01L·4
3.5A; 100V; 0.60; TO·39
3.5A; 60V; 0.60; TO·39
3.5A; 100V; 0.80; TO·39
3.5A; 60V; 0.8n; TO·39
6A; 100V; 0.300; TO·39
6A; 60V; 0.30n; TO·39
5A; 100V; 0.400; TO·39
5A; 60V; 0.400; TO·39
8A; 100V; 0.180; TO·39
8A; 60V; 0.18n; TO·39
7A; 100V; 0.250; TO·39
7A; 60V; 0.250; TO·39
2.2A; 200V; 1.50; TO·39
2.2A; 150V; 1.50; TO·39
1.8A; 200V; 2.40; TO·39
1.8A; 150V; 2.40; TO·39
3.5A; 200V; 0.80; TO·39
3.5A; 150V; 0.80; TO·39
3.0A; 200V; 1.20; TO·39
3.0A; 150V; 1.20; TO·39
5.5A; 200V; 0.40; TO·39
5.5A; 150V; 0.4n; TO·39
4.5A; 200V; 0.6n; TO·39
4.5A; 150V; 0.60; TO·39
l.35A; 400V; 3.60; TO·39
l.35A; 350V; 3.60; TO·39
l.l5A; 400V; 5.00; TO·39
U5A; 350V; 5.0n; TO·39
2.5A; 400V; 1.80; TO·39
2.5A; 350V; 1.80; TO·39
2.0A; 400V; 2.50; TO·39
2.0A; 350V; 2.50; TO·39
3.5A; 400V; 3.50; TO·39
3.5A; 350V; 3.50; TO·39
3.0A; 400V; 3.0n; TO·39
3.0A; 350V; 3.00; TO·39
1.6A; 500V; 3.00; TO·39
1.6A; 450V; 3.00; TO·39
1.4A; 500V; 4.00; TO·39
1.4A; 450V; 4.00; TO·39
2.75A; 500V; 1.5n; TO·39
2.75A; 450V; 1.5n; TO·39
2.25A; 500V; 2.00; TO·39
2.25A; 450V; 2.00; TO·39
8A; 100V; 0.300; TO·3
8A; 60V; 0.30n; TO·3
7 A; 100V; 0.400; TO·3
7A; 60V; 0.400; TO·3
14A; 100V; 0.18n; TO·3

• Contact Unilrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UN ITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1·17

PRINTED IN USA

•

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PAGE

PART NUMBER

POWER MOSFET
TRANSISTOR
4·310
4·310
4·310
4-316

UFN131
UFN132
UFN133
UFN140

4·316

UFN141

4·316

UFN142

4·316

UFN143

4·322

UFN150

4·322

UFN151

4·322

UFN152

4·322

UFN153

4·328
4·328
4·328
4·328
4·334
4·334
4·334
4·334
4·340

UFN220
UFN221
UFN222
UFN223
UFN230
UFN231
UFN232
UFN233
UFN240

4·340

UFN241

4·340

UFN242

4·340

UFN243

4·346

UFN250

4·346

UFN251

4·346

UFN252

4·346

UFN253

4·352
4·352
4·352
4·352
4-358
4·358
4·358
4·358
4·364
4·364
4·364
4·364
4·370
4·370
4·370
4·370
4·376
4·376
4·376
4·376
4·382

UFN320
UFN321
UFN322
UFN323
UFN330
UFN331
UFN332
UFN333
UFN340
UFN341
UFN342
UFN343
UFN350
UFN351
UFN352
UFN353
UFN420
UFN421
UFN422
UFN423
UFN430

14A; 60V; 0.180; TO·3
12A; 100V; 0.250; TO-3
12A; 60V; 0.250; TO·3
27 A; 100V; 0.850;
TO·3 (Modified)
27A; 60V; 0.850;
TO·3 (Modified)
24A; l00V; O.UO;
TO·3 (Modified)
24A; 60V; 0.110;
TO-3 (Modified)
40A; 100V; 0.0550;
TO·3 (Modified)
40A; 60V; 0.0550;
TO-3 (Modified)
33A; 100V; 0.080;
TO·3 (Modified)
33A; 60V; 0.080;
TO-3 (Modified)
5A; 200V; 0.80; TO·3
5A; 150V; 0.80; TO·3
4A; 200V; 1.20; TO·3
4A; 150V; 1.20; TO·3
9A; 200V; 0.40; TO·3
9A; 150V; 0.40; TO·3
8A; 200V; 0.60; TO·3
8A; 150V; 0.60; TO·3
18A; 200V; 0.180; TO·3
(Modified)
18A; 150V; 0.180; TO·3
(Modified)
16A; 200V; 0.220; TO·3
(Modified)
16A; 150V; 0.220; TO·3
(Modified)
30A; 200V; 0.0850;
TO·3 (Modified)
30A; 150V; 0.0850;
TO·3 (Modified)
25A; 200V; 0.1200;
TO·3 (Modified)
25A; 150V; 0.1200;
TO·3 (Modified)
3A; 400V; 1.80; TO·3
3A; 350V; 1.80; TO·3
2.5A; 400V; 2.50; TO·3
2.5A; 350V; 2.50; TO·3
5.5A; 400V; 1.00; TO·3
5.5A; 350V; 1.00; TO·3
4.5A; 400V; 1.50; TO·3
4.5A; 350V; 1.50; TO·3
lOA; 400V; 0.550; TO·3
lOA; 350V; 0.550; TO·3
8A; 400V; 0.800; TO·3
8A; 350V; 0.800; TO·3
15A; 400V; 0.30; TO·3
15A; 350V; 0.30; TO·3
13A; 400V; 0.40; TO·3
13A; 350V; 0.40; TO·3
2.5A; 500V; 3.00; TO·3
2.5A; 450V; 3.00; TO·3
2A; 500V; 4.00; TO·3
2A; 450V; 4.00; TO·3
4.5A; 500V; 1.50; TO-3

DESCRIPTION
POWER MOSFET
TRANSISTOR

4·382
4·382
4·382
4·388
4·388
4·388
4·388
4·394
4·394
4-394
4·394
4·400
4·400
4·400
4·400
4·406
4·406
4·406
4·406
4·412
4·412
4·412
4-412
4-418
4-418
4-418
4·418
4·424
4·424
4·424
4·424
4·430
4·430
4·430
4·430
4·436
4·436
4·436
4·436
4·442
4·442
4·442
4·442
4·448
4·448
4·448
4·448
4·454
4·454
4·454
4·454
4·460
4·460
4·460
4·460
4·466
4·466
4·466
4·466
4·472
4·472
4·472
4·472
4·478

UFN431
UFN432
UFN433
UFN440
UFN441
UFN442
UFN443
UFN450
UFN451
UFN452
UFN453
UFN510
UFN511
UFN512
UFN513
UFN520
UFN521
UFN522
UFN523
UFN530
UFN531
UFN532
UFN533
UFN540
UFN541
UFN542
UFN543
UFN610
UFN611
UFN612
UFN613
UFN620
UFN621
UFN622
UFN623
UFN630
UFN631
UFN632
UFN633
UFN640
UFN641
UFN642
UFN643
UFN710
UFN711
UFN712
UFN713
UFN720
UFN721
UFN722
UFN723
UFN730
UFN731
UFN732
UFN733
UFN740
UFN741
UFN742
UFN743
UFN820
UFN821
UFN822
UFN823
UFN830

4.5A; 450V; 1.50; TO·3
4A; 500V; 2.00; TO-3
4A; 450V; 2.00; TO·3
8A; 500V; 0.850; TO·3
8A; 450V; 0.850; TO·3
7A; 500V; 1.100; TO·3
7A; 450V; 1.100; TO·3
13A; 500V; 0.40; TO-3
13A; 450V; 0.40; TO·3
12A; 500V; 0.50; TO·3
12A; 450V; 0.50; TO-3
4A; 100V; 0.60; TO-220AB
4A; 60V; 0.60; TO·220AB
3.5A; 100V; 0.80; TO-220AB
3.5A; 60V; 0.80; TO·220AB
8A; 100V; 0.300; TO-220AB
8A; 60V; 0.300; TO-220AB
7A; 100V; 0.400; TO·220AB
7A; 60V; 0.400; TO·220AB
14A; 100V; 0.180; TO·220AB
14A; 60V; 0.180; TO·220AB
12A; 100V; 0.250; TO·220AB
12A; 60V; 0.250; TO·220AB
27A; 100V; 0.0850; TO-220AB
27 A; 60V; 0.0850; TO-220AB
24A; 100V; O.UO; TO·220AB
24A; 60V; 0.110; TO·220AB
2.5A; 200V; 1.50; TO-220AB
2.5A; 150V; 1.50; TO·220AB
2A; 200V; 2.40; TO·220AB
2A; 150V; 2.40; TO-220AB
5A; 200V; 0.80; TO-220AB
5A; 150V; 0.80; TO·220AB
4A; 200V; 1.20; TO·220AB
4A; 150V; 1.20; TO·220AB
9A; 200V; 0.40; TO·220AB
9A; 150V; 0.40; TO·220AB
8A; 200V; 0.60; TO·220AB
8A; 150V; 0.60; TO·220AB
18A; 200V; 0.180; TO·220AB
18A; 150V; 0.180; TO·220AB
16A; 200V; 0.220; TO·220AB
16A; 150V; 0.220; TO·220AB
1.5A; 400V; 3.60; TO·220AB
1.5A; 350V; 3.60; TO-220AB
l.3A; 400V; 5.00; TO-220AB
l.3A; 350V; 5.00; TO-220AB
3A; 400V; 1.80; TO·220AB
3A; 350V; 1.80; TO-220AB
2.5A; 400V; 2.50; TO·220AB
2.5A; 350V; 2.50; TO·220AB
5.5A; 400V; 1.00; TO-220AB
5.5A; 350V; 1.00; TO·220AB
4.5A; 400V; 1.50; TO·220AB
4.5A; 350V; 1.50; TO·220AB
lOA; 400V; 0.550; TO·220AB
lOA; 350V; 0.550; TO·220AB
8A; 400V; 0.800; TO·220AB
8A; 350V; 0.800; TO·220AB
2.5A; 500V; 3.00; TO·220AB
2.5A; 450V; 3.00; TO·220AB
2.0A; 500V; 4.00; TO·220AB
2.0A; 450V; 4.00; TO·220AB
4.5A; 500V; 1.50; TO·220AB

• Contact Unitrode

Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1·18

PRINTED IN USA

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION
POWER MOSFET
TRANSISTOR

4-478
4-478
4-478
4-484
4-484
4-484
4-484

UFN831
UFN832
UFN833
UFN840
UFN841
UFN842
UFN843

4.5A;
4.0A;
4.0A;
8.0A;
8.0A;
7.0A;
7.0A;

450V;
500V;
450V;
500V;
450V;
500V;
450V;

l.50; TO-220AB
2.00; TO-220AB
2.00; TO-220AB
0.850; TO-220AB
0_850; TO-220AB
1.100; TO-220AB
1.100; TO-220AB

7-41
7-41
7-41
7-44
7-44
7-44
7-44
7-44
7-44
7-44
7-44
7-44
7-44
7-44
7-44

UFS5
UFS7.5
UFSIO
UGB5
UGB7.5
UGBI0
UGD5
UGD7.5
UGDI0
UGE2.5
UGE5
UGE7.5
UGF2.5
UGF5
UGF7.5

5.0kV
7.5kV
lOkV
5.0kV
7.5kV
10kV
5.0kV
7.5kV
lOkV
2.5kV
5.0kV
7.5kV
2.5kV
5.0kV
7.5kV

UM4000 series
UM4300 series
UM4900 series
U M6000 series
U M6200 series
U M6600 series
U M7000 series
UM7I00 series
UM7200 series
UM7300 series
UM9301 series
UM9401
UM9402
UM9415
UM9441
UM9601-UM9608
UM9701

0.50,3.0pF,25W,100-1200V
1.50,2.2pF,18W,l00-lOOOV
0.50,3.0pF ,37W,l00-600V
l.70,0.5pF,6W,lOO-1000V
0.40, l.lpF, 6W,lOO-400V
2.50,0.4pF,4W,lOO-lOOOV
l.00,0.9pF,10W,lOO-1600V
0.60, l.2pF,10W, 100-800V
0.250,2.2pF, lOW, 100-400V
3.50, 0.7pF, 7.5W, 100-1000V
CATV Attenuator Diodes
2-Way Radio Switch Diodes
2-Way Radio Switch Diodes
2-Way Radio Switch Diodes
Radiation Detector
Microstrip PIN
Low Rs Antenna Switch

4-490
4-490
4-494
4-494
4-498
4-498
4-502
4-502
4-506
4-510

UMTlO06
UMTlO07
UMTlO08
UMTlO09
UMTlOll
UMTlO12
UMTl203
UMTl204
UMT2000
UMT2003

4-513
4-513
4-517
4-517
4-521
4-521
4-525
4-525
4-525
4-525

UMTl3004
UMTl3005
UMTl3006
UMTl3007
UMTl3008
UMTl3009
UPTlll
UPTl12
UPTl13
UPTl14

NPN; 5A; 400V; TO-3
NPN; 5A; 500V; TO-3
NPN; 8A; 300V; TO-3
NPN; 8A; 400V; TO-3
NPN; 15A; 400V; TO-3
NPN; 15A; 500V; TO-3
NPN; 3.0A; 300V; TO-220
NPN; 3.0A; 400V; TO-220
NPN; 15A; 850V; TO-3
NPN; 30A; 850V;
TO-3 (Modified)
NPN; 4.0A; 600V; TO-220
NPN; 4_0A; 700V; TO-220
NPN; ROA; 600V; TO-220
NPN; 8.0A; 700V; TO-220
NPN; 12.0A; 600V; TO-220
NPN; 12.0A; 700V; TO-220
NPN; l.OA; 40V; TO-5
NPN; l.OA; 60V; TO-5
NPN; l.OA; 80V; TO-5
NPN; l.OA; 100V; TO-5

RECTIFIER MODULE

PIN DIODE
12-9
12-14
12-9
12-20
12-20
12-20
12-25
12-25
12-25
12-14
12-30
12-33
12-33
12-33
12-38
12-40
12-50

POWER TRANSISTOR

PAGE

DESCRIPTION

PART NUMBER

POWER TRANSISTOR
4-525
4-527
4-527
4-527
4-527
4-527
4-529
4-529
4-529
4-529
4-529
4-529
4-529
4-529
4-529
4-529
4-531
4-531
4-531
4-531
4-531
4-533
4-533
4-533
4-533
4-533
4-535
4-535
4-535
4-535
4-535
4-537
4-537
4-537
4-539
4-539
4-539
4-539

UPTl15
UPT211
UPT212
UPT213
UPT214
UPT215
UPT311
UPT312
UPT313
UPT314
UPT315
UPT321
UPT322
UPT323
UPT324
UPT325
UPT521
UPT522
UPT523
UPT524
UPT525
UPT611
UPT612
UPT613
UPT614
UPT615
UPT721
UPT722
UPT723
UPT724
UPT725
UPTA510
UPTA520
UPTA530
UPTB520
UPTB530
UPTB540
UPTB550

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
N PN;

6-110
6-110
6-110
6-110
6-110
6-110
6-110
6-110
6-110
6-110

..

UR105
URllO
UR1l5
UR120
UR125
UR205
UR210
UR215
UR220
UR225
UR710
UR720

2.0A;
l.OA;
l.OA;
l.OA;
l.OA;
2.0A;
2.0A;
2.0A;
2.0A;
2.0A;
l.OA;
l.OA;

7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48

US12
US15
US18
US20
US25
US30
US35
US40
US45A
US50A
US60A
US70A

l.OA; 100V; TO-5
2.0A; 40V; TO-5
2.0A; 60V; TO-5
2.0A; 80V; TO-5
2.0A; 100V; TO-5
2.0A; 100V; TO-5
2_0A; 150V; TO-5
2.0A; 200V; TO-5
2.0A; 250V; TO-5
2.0A; 300V; TO-5
2_0A; 300V; TO-5
2.0A; 150V; TO-66
2.0A; 200V; TO-66
2.0A; 250V; TO-66
2.0A; 300V; TO-66
2.0A; 300V; TO-66
3.5A; 150V; TO-66
3.5A; 200V; TO-66
3.5A; 250V; TO-66
3.5A; 300V; TO-66
3.5A; 300V; TO-66
5.0A; 40V; TO-5
5.0A; 60V; TO-5
5.0A; 80V; TO-5
5.0A; 100V; TO-5
5.0A; 100V; TO-5
5.0A; 150V; TO-66
5.0A; 200V; TO-66
5.0A; 250V; TO-66
5.0A; 300V; TO-66
5_0A; 300V; TO-66
0.5A; 100V; TO-92
0.5A; 200V; TO-92
0.5A; 300V; TO-92
O.lA; 200V; TO-92
O.lA; 300V; TO-92
O.lA; 40QV; TO-92
O.lA; 500V; TO-92

RECTIFIER
50V
lOOV
150V
200V
250V
50V
lOOV
150V
200V
250V
lOOV
200V

RECTIFIER MODULE
l.2kV
l.5kV
l.8kV
2.0kV
2.5kV
3.0kV
3.5kV
4.0kV
4.5kV
5.0kV
6.0kV
7.0kV

• Contact Unltrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-19

PRINTED IN USA

•

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PAGE

PART NUMBER

RECTIFIER MODULE
7-48
7-48
7-48
7-48
7-48
7-48
7-41
7-41
7-41
7-41

US80A
US100A
USl20A
US150A
USl80A
US200A
USB2.5
USB5
USB7.5
USB10

8.0kV
10kV
12kV
15kV
18kV
20kV
2.5kV
5.0kV
7.5kV
10kV

SCHOTTKY RECTIFIER
6-113 US0320C
6-113 US0335C
6-113 US0345C
6-115 US0520
6-115 US0535
6-115 US0545
6-118 US0545HR2
6-115 US055Q
6-121 US0620
6-121 US0635
6-121 US0640
6-121 US0645
6-123 US0620C
6-123 US0635C
6-123 US0640C
6-123 US0645C
6-125 US0720
6-125 US0735
6-125 US0740
6-125 US0745
6-127 US0720C
6-127 US0735C
6-127 US0740C
6-127 US0745C
6-129 US0820
6-129 US0835
6-129 US0840
6-129 US0845
6-131 US0920
6-131 US0935
6-131 US0940
6-131 US0945
6-133 US01l20
6-133 US01l30
6-133 USOll40
US06035
US06045

..

30A; 20V; TO-3
30A; 35V; TO-3
30A; 45V; TO-3
75A; 20V; 00-5
75A; 35V; 00-5
75A; 45V; 00-5
75A; 45V; 00-5
75A; 50V; 00-5
6A; 20V; TO-220AC
6A; 35V; TO-220AC
6A; 40V; TO-220AC
6A; 45V; TO-220AC
12A; 20V; TO-220AB
12A; 35V; TO-220AB
12A; 40V; TO-220AB
12A;45V;TO-220AB
8A; 20V; TO-220AC
8A; 35V; TO-220AC
8A; 40V; TO-220AC
8A; 45V; TO-220AC
16A; 20V; TO-220AB
16A; 35V; TO-220AB
16A; 40V; TO-220AB
16A; 45V; TO-220AB
12A; 20V; TO-220AC
12A; 35V; TO-220AC
12A; 40V; TO-220AC
12A; 45V; TO-220AC
16A; 20V; TO-220AC
16A; 35V; TO-220AC
16A; 40V; TO-220AC
16A; 45V; TO-220AC
l.OA;20V;ASA
l.OA;30V;ASA
l.OA;40V;ASA
60A; 35V; 00-5
60A; 45V; 00-5

SCHOTTKY MODULE
6-135
6-135
6-135
6-137
6-137
6-137

USM140C
USM145C
USM150C
USM20040C
USM20045C
USM20050C

7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48

USR12
USR15
USR18
USR20
USR25
USR30
USR35
USR40A

100A; 40V;
100A; 45V;
lOOA; 50V;
200A; 40V;
200A; 45V;
200A; 50V;

M1
M1
M1
M2
M2
M2

RECTIFIER MODULE
l.2kV
l.5kV
l.8kV
2.0kV
2.5kV
3.0kV
3.5kV
4.0kV

DESCRIPTION
RECTIFIER MODULE

7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-48
7-41
7-41
7-41
7-41

•
•
•
•
•

·••
•

•
•
•
•

··•
•
•
•
•
•
•
•
•
•
•

6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139
6-139

USR45A
USR50A
USR60A
USR70A
USR80A
USR100A
USR120A
USR150A
USRl80A
USS5
USS7.5
USS10
USS15

4_5kV
5_0kV
6_0kV
7_0kV
8_0kV
10kV
12kV
15kV
18kV
5.0kV
7.5kV
10kV
15kV

UT111 (lN536)
UT112 (1 N537)
UT113 (1 N3656)
UT114 (lN539)
UT115 (1 N3657)
UT117 (1N547)
UT118 (1 N3658)
UT119
UT120
UT211 (1 N645)
UT212 (1N646)
UT213 (1 N647)
UT214 (1 N648)
UT215 (lN649)
UT221 (1 N676)
UT222 (1 N677)
UT223 (1 N678)
UT224 (1 N679)
UT225 (1 N681)
UT226 (1 N682)
UT227 (1 N683)
UT228 (1 N684)
UT229 (1 N685)
UT231 (1 N686)
UT232 (1 N687)
UT233 (1 N689)
UT234
UT235
UT236
UT237
UT238
UT242
UT244
UT245
UT247
UT249
UT251
UT252
UT254
UT255
UT257
UT258
UT261
UT262 (lN3981)
UT264 (1 N3982)
UT265
UT267 (1 N3983)
UT268
UT347
UT361
UT362

O.75A; 50V
0.75A; 100V
0.75A; 200V
O.75A; 300V
0.75A; 400V
0.75A; 500V
O.75A; 600V
0.75A; 800V
O.75A; 1000V
0.75A; 225V
0.75A; 300V
O.75A; 400V
0.75A; 500V
O.75A; 600V
O.5A; 100V
O.75A; 100V
O.5A; 200V
O.75A; 200V
O.5A; 300V
O.75A; 300V
O.5A; 400V
O.75A; 400V
O.5A; 500V
O.75A; 500V
O.5A; 600V
O.75A; 600V
l.OA; 200V
l.OA;400V
l.OA; 100V
l.OA; 500V
l.OA; 600V
l.25A;200V
1.25A; 400V
l.25A;500V
l.25A;600V
l.25A; 100V
l.5A; 100V
l.5A; 200V
l.5A;400V
l.5A;500V
l.5A; 600V
l.5A;800V
2.0A; 100V
2.0A; 200V
2.0A; 400V
2.0A; 500V
2.0A; 600V
2.0A; 800V
l.OA; 1000V
l.OA; 800V
l.2A; 800V

RECTIFIER

• Contact Un itrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-20

PRINTED IN U.S A

PART NUMBER INDEX

PAGE

DESCRIPTION

PART NUMBER

PAGE

6·139
6·139
6·143
6·143
6·143
6·143
6·143

·

6·143
6·143
6·143
6·143
6·143
6·143
6·143
6·143
6·143
6·143
6·143

·•

6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·147
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150
6·150

·•

6·154
6·154
6·154

UT363
UT364
UT2005
UT2010
UT2020
UT2040
UT2060
UT2080
UT3005
UT3010
UT3020
UT3040
UT3060
UT3080·
UT4005
UT4010 (lN5180)
UT4020
UT4040 (l N5207)
UT4060
UT4080
UT4100
UT5105
UT5110
UT5120
UT5130
UT5140
UT5150
UT5160
UT6105
UT6110
UT6120
UT6130
UT6140
UT6160
UT8105
UT8110
UT8120
UT8130
UT8140
UT8160
UTR01
UTR02
UTR10
UTRll
UTR12
UTR20
UTR21
UTR22
UTR30
UTR31
UTR32
UTR40
UTR41
UTR42 (lN5206)
UTR50
UTR51
UTR52
UTR60
UTR61
UTR62
UTR70
UTR71
UTR2305
UTR2310
UTR2320

1.2A; 1000V
1.5A; 1000V
2.0A; 50V
2.0A; 100V
2.0A; 200V
2.0A; 400V
2.0A; 600V
2.0A; 800V
3.0A; 50V
3.0A; 100V
3.0A; 200V
3.0A; 400V
3.0A; 600V
3.0A; 800V
4.0A; 50V
4.0A; 100V
4.0A; 200V
4.0A; 400V
4.0A; 600V
4.0A; 800V
4.0A; 1000V
7.5A; 50V
7.5A; 100V
7.5A; 200V
7.5A; 300V
7.5A; 400V
7.5A; 500V
7.5A; 600V
9.0A; 50V
9.0A; 100V
9.0A; 200V
9.0A; 300V
9.0A; 400V
9.0A; 600V
12.0A; 50V
12.0A; 100V
12.0A; 200V
12.0A; 300V
12.0A; 400V
12.0A; 600V
1.0A;50V
2.0A; 50V
0.5A; 100V
1.0A; 100V
2.0A; 100V
0.5A; 200V
1.0A; 200V
2.0A; 200V
0.5A; 300V
1.0A;300V
2.0A; 300V
0.5A; 400V
1.0A;400V
2.0A; 400V
0.5A; 500V
1.0A; 500V
2.0A; 500V
0.5A; 600V
1.0A; 600V
2.0A; 600V
0.5A; 700V
1.0A;700V
2.0A; 50V
2.0A; 100V
2.0A; 200V

DESCRIPTION

PART NUMBER

RECTIFIER

RECTIFIER
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·154
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·158
6·161
6·161
6·161
6·161
6·161
6·161
6·161
6·161
6·161
6·161
6·164
6·164
6·164
6·164

.
.

6·164
6·164
6·164
6·164

9·21
9·21
9·21
9·21
9·21
9·21
9·21
9·21
9·23
9·23
9·23
9·23
9·25

UTR2340
UTR2350
UTR2360
UTR3305
UTR3310
UTR3320
UTR3340
UTR3350
UTR3360
UTR4305
UTR4310
UTR4320
UTR4340
UTR4350
UTR4360
UTR4405
UTR4410
UTR4420
UTR4430
UTR4440
UTR5405
UTR5410
UTR5420
UTR5430
UTR5440
UTR6405
UTR6410
UTR6420
UTR6430
UTR6440
UTX105
UTX110
UTX1l5
UTX120
UTX125
UTX205
UTX210
UTX215
UTX220
UTX225
UTX3105
UTX3110
UTX3115
UTX3120
UTX3125
UTX4105
UTX4110
UTX4115
UTX4120
UTX4125

2.0A; 400V
2.0A; 500V
2.0A; 600V
3.0A; 50V
3.0A; 100V
3.0A; 200V
3.0A; 400V
3.0A; 500V
3.0A; 600V
4.0A; 50V
4.0A; 100V
4.0A; 200V
4.0A; 400V
4.0A; 500V
4.0A; 600V
6.0A; 50V
6.0A; 100V
6.0A; 200V
6.0A; 300V
6.0A; 400V
7.5A; 50V
7.5A; 100V
7.5A; 200V
7.5A; 300V
7.5A; 400V
9.0A; 50V
9.0A; 100V
9.0A; 200V
9.0A; 300V
9.0A; 400V
1.0A; 50V
1.0A; 100V
1.0A; 150V
1.0A; 200V
1.0A; 250V
2.0A; 50V
2.OA; 100V
2.0A; 150V
2.0A; 200V
2.0A; 250V
3.0A; 50V
3.0A; 100V
3.0A; 150V
3.0A; 200V
3.0A; 250V
4.0A; 50V
4.0A; 100V
4.0A; 150V
4.0A; 200V
4.0A; 250V

UZllO·UZ1l9
UZ120·UZ140
UZ21O·UZ219
UZ220·UZ240
UZ706·UZ760
UZ770·UZ790
UZ806·UZ860
UZ870·UZ890
UZ4110·UZ4120
UZ4210·UZ4220
UZ4706·UZ4791
UZ4806·UZ4891
UZ5110·UZ5119

3W;
3W;
3W;
3W;
3W;
3W;
3W;
3W;
5W;
5W;
5W;
5W;
5W;

ZENER
5%
5%
10%
10%
5%
5%
10%
10%
5%
10%
5%
10%
5%

• Contact Unit,ode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1-21

PRINTED IN USA

•

PART NUMBER INDEX

PAGE

PART NUMBER

DESCRIPTION

PAGE

PART NUMBER

DESCRIPTION

ZENER
9-25
9-25
9-25
9-25
9-25
9-25
9-27
9-27
9-27
9-27
9-27
9-27
9-27
9-27
9-27
9-27
9-27
9-27
9-29
9-29
9-29
9-29

..

UZ5l20
UZ52l0-UZ5240
UZ5706-UZ5760
UZ5770-UZ5790
UZ5806-UZ5860
UZ5870-UZ5890
UZ7110
UZ7110L
UZ7210
UZ7210L
UZ7706-UZ7750
UZ7706L-UZ7750L
UZ7756-UZ7790
UZ7756L-UZ7790L
UZ7806-UZ7850
UZ7806L-UZ7850L
UZ7856-UZ7890
UZ7856L-UZ7890L
UZ8110-UZ8l20
UZ82l0-UZ8220
UZ8706-UZ8790
UZ8806-UZ8890
UZSJ06-UZS440
UZS506-UZS640

5W; 5%
5W; 10%
5W; 5%
5W; 5%
5W; 10%
5W; 10%
lOW; 5%
6W; 5%
lOW; 10%
6W; 10%
lOW; 5%
6W; 5%
lOW; 5%
6W; 5%
lOW; 10%
6W; 10%
lOW; 10%
6W; 10%
lW; 5%
lW; 10%
lW; 5%
lW; 10%
3W; 5%
3W; 10%

• Contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1-22

PRINTED IN

u.s

A

DESIGNERS' GUIDES

2-1

2-2

POWER SUPPLY DESIGNERS' GUIDE

II

POWER HYBRIDS & MODULES
, l'ItJl ~,,;J(t,'i':, ::OJ".

OotPtit-

Type

Current, f'k.

I~-

Voltage

PoIerity

60

5A

lOA

15A

,'PIC645
-'~,

--'~'

20A

'~=

"'P'
"

\

,

JJ:" ~ '.'

-.;~.;;,:,~

(n$),

)

100
60
80
100

Pos.
Pos.
Pos.
Neg.
Neg.
Neg.

60
80
100
60
80
100

Pos.
Pos.
Pos.
Neg.
Neg.
Neg.

60
80
100
60
80
100

Pos.
Pos.
Pos.
Neg.
Neg.
Neg.

60
80
100
60
80
100

Pos.
Pos.
Pos.
Neg.
Neg.
Neg.

300

300

30

80

75

150

150

250

250

250

175

300

300

300

150

300

,,:~~
L5@2

4 PIN
TO-66
(Isolated)

L5@5

4 PIN
TO-66
(Isolated)

L5@7

4 PIN
TO-66
(Isolated)

L5@7

3 PIN
TO·3

3 PIN
TO·3

30A

40

Pos.
Pos.

350

300

1@20

8A

400

350

Pas.

200

200

L5@5

350

Neg.

200

200

L5@5

8A

, ,1'ypa,',:
Ple.90tH3>'C. 0 '

,-VoIt,-

400

lCq~.
.
".

,,~lon.·

5A;60V,80V,lOOV
H-Bridge Hybrid Circuit

UNITROOE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

'

.";

4 PIN
TO-66
(Isolated)

.

• Designed and Characterized for Inductive Loads
as Stepper Motors, DC Motor Drives,
Full Bridge DC Converters
• Fast Switching Times with
Low (5mA) Drive Current
• Electrically Isolated 18-Pin Dip
with Integral Heat Spreader
• Compatible with Automatic Insertion

2-3

4 PIN
TO-66
(Isolated)

18 PIN DIL
with Integral
Heat Spreader

PRINTED IN U.S.A.

POWER SUPPLY DESIGNERS' GUIDE
LINEAR INTEGRATED CIRCUITS

Pulse Width Modulators

16 Pin DIP

X

500kHz

16 Pin DIP

500kHz

16 Pin DIP

400kHz

200mA

16 Pin DIP

X

18 Pin DIP

X

16 Pin DIP

16 Pin DIP

X
18 Pin DIP

16 Pin DIP

16 Pin DIP

18 Pin DIP

8 Pin DIP

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6l7) 861-6540
TWX (7l0) 326-6509 • TELEX 95-1064

2-4

PRINTED IN

u.s

A

POWER SUPPLY DESIGNERS' GUIDE
LINEAR INTEGRATED CIRCUITS
Power Supply Support Functions

, .. ;tm

DQCRIPTIOtII

.UCl54a/2543/3543

UC15,W2544i3544
.'

.-~

Power Supply
Supervisory Circuit,
Monitors and Controls
Power Supply Output

'.

<-

0,:,";.

..

"

.

,

..

..
<"

• Minimum V'N-VOUT less than O,5V at 5A Load
with External Pass Device
• Equally Usable for either Positive
or Negative Regulator Design
• Adjustable Low Threshold Current Sense Amplifier
• Under- and Over-Voltage Fault Alert with
Programmable Delay
• Over-Voltage Fault Latch with 100mA
Crowbar Drive Output

16 Pin
DIL

Isolated Feedback
Generator
Stable and Reliable
Alternative to an
Optical Coupler

• An Amplitude-Modulation System for Transformer
Coupling an Isolated Feedback Error Signal
• Internal 1% Reference and Error Amplifier
• Loop Status Monitor
• Low-Cost Alternative to Optical Couplers
• Internal Carrier Oscillator Usable to 5MHz
• Modulator Synchronizable to an External Clock

14 Pin
DIL

Quad Supply and
Line Monitor
Precision System

•
•
•
•
•
•

18 Pin
DIL

.
<, ."

.lJC19MI2903'39(}3

16 Pin
DIL
(1543 Series)

High Efficiency
Linear Regulator,
Low Input-Output
Differentia I

...

' ..
oC1901J2$,:

pAc~·i:'.

Dual, 1.5A, Totem Pole Outputs
Parallel or Push-Pull Operations
Single-Ended to Push-Pull Conversion
Internal Overlap Protection
Analog, Latched Shutdown
High-Speed, Power MOSFET Compatible
Thermal Shutdown Protection
5 to 40V Operation
Low Quiescent Current

, z·
'.,

~.-

•
•
•
•
•
•
•
•
•

,.,'c,

.,--

.'.

.

Dual High Current
MOSFET Compatible
Output Driver

. U(:1$12834/3834

'.'

Over/Under-Voltage, and Current Sensing Circuits
Programmable Time Delays
SCR "Crowbar" Drive of 300mA
Optional Over-Voltage Latch
Internal 1% Accurate Reference
Remote Activation Capability
Uncommitted Comparator
Inputs for Low Voltage Sensing (UC1544 series only)

.

UC17Q9/2706/3706
,

KEY fEATURES
•
•
•
•
•
•
•
•

18 Pin
DIL
(1544 series)
16 Pin
DIL

Monitor Four Power Supply Output Voltage Levels
Both Over- and Under-Voltage Indicators
Internal Inverter for Negative Level Sense
Adjustable Fault Window
Additional Input for Early Line Fault Sense
On Chip, High-Current General Purpose OP-AMP

Functional Circuit
TYPE
_utl7.04~794',

'mHATUItO

"DUCRlPllON
Bridge
Transducer
Switch

.. ' . - --

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

•
•
•
•
•
•
•
•
•

Dual Matched Current Sources
High-Gain Differential Sensing Circuit
Wide Common-Mode Input Capability
Complimentary Digital Open-Collector Outputs
Externally Programmable Time Delay
Optional Output Latch with Reset
Built-in Diagnostic Activation
Wide Supply Voltage Range
High Current Heater Power Source Driver

2-5

:

'MIMI
16 Pin
DIL

PRINTED IN U.S.A

•

POWER SUPPLY DESIGNERS' GUIDE
LINEAR INTEGRATED CIRCUITS
Voltage Regulators
Three Terminal Voltage Regulators, Adjustable
;j:

TO-3
1.5A

Pos.

Adjustable from 1.2V to 37V

TO-3
TO-3

1.5A

Neg.

Adjustable from -1.2V to -37V

3.0A

Pos.

Adjustable from 1.2V to 33V

TO-3
TO-3
TO-3

TO-3
TO-3
TO-3

Three Terminal Voltage Regulators, Fixed, Positive
.
'
.
• fl:EGIJIAl'ED ~PUT yqI,.TAGE.

PAtiW,;E .'

12V ± 1%

15V ± 1%

TO-3
TO-3

12V ± 4%

15V ± 4%

TO-3
TO-3

TO-3
TO-3

Three Terminal Voltage Regulators, Fixed, Negative

1.5A

Neg.

-5V ± 1%

-12V ± 1%

-15V ± 1%

1.5A

Neg.

-5V ± 4%

-12V ± 4%

-15V ± 4%

TO-3

TO-3

• Also available In TO-220 package_

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2-6

PRINTED IN U.S A

POWER SUPPLY DESIGNERS' GUIDE
N·CHANNEL POWER MOSFETS
TO·3
VO$
.Ora1n

~"."""
.Ort-$tate

Voltage

alice

500'
500

0.4
0.4
0.5
0.85

Soume

10 ContinuClUs
Drain Current
(Amps)

.
10M

Drain

.Resist·

Part

V..

P.....
Pulsed Power

Dra)rl
Source O~~e

Oiss~

Current pation

Voltage

(Amps) (Watts)

(Volts)

Numbers

l00'C
Case

25'C
Case

1.1

2N6770
UFN450
UFN452
UFN440
UFN442

7.75
8.0
7.0
5.0
4.0

12.0
13.0
12.0
8.0
7.0

48
52
48
32
28

150
150
150
125
125

200
200
20'0
200'
200

1.5
1.5
2.0
3.0
4.0

2N6762
UFN430
UFN432
UFN420
UFN422

3.0
3.0
3.5
1.5
1.0

4.5
4.5
4.0
2.5
2.0

18
18
16
10
8

75
75
75
40
40

2()()

450

0.4
0.5
0.5
0.85

450'.

1.1

UFN451
2N6769
UFN453
UFN441
UFN443

8.0
7.0
7.0
5.0
4.0

13.0
11.0
12.0
8.0
7.0

52
44
48
32
28

150
150
150
125
125

450

1.5
2.0
2.0
3.0
4.0

UFN431
2N6761
UFN433
UFN421
UFN423

3.0
2.5
2.5
1.5
1.0

4.5
4.0
4.0
2.5
2.0

18
16
16
10
8

75
75
75
40
40

0.3
0.3
0.4
0.55
0.8

2N6768
UFN350
UFN352
UFN340
UFN342

9.0
9.0
8.0
6.0
5.0

14.0
15.0
13.0
10.0
8.0

56
60
52
40
32

150
150
150
125
125

100

1.0
1.0
1.5
1.8
2.5

2N6760
UFN330
UFN332
UFN320
UFN322

3.5
3.5
3.0
2.0
1.5

5.5
5.5
4.5
3.0
2.5

22
22
18
12
10

75
75
75
40
40

.100
10'0
100

0.3
0.4
0.4
0.55
0.8

UFN351
2N6767
UFN353
UFN341
UFN343

9.0
7.75
8.0
6.0
5.0

15.0
12.0
13.0
10.0
8.0

60
48
52
40
32

150
150
150
125
125

1.0
1.5
1.5
1.8
2.5

UFN331
2N6759
UFN333
UFN321
UFN323

3.5
3.0
3.5
2.0
1.5

5.5
4.5
4.5
3.0
2.5

22
18
18
12
10

75
75
75
40
40

(Volts). (Ohms)

500
500'

50Q
500

500
500'
500
500
450'
450

450

456.

. 45'0

45l.l
450"

400
400
400'
. 400'

400

400
400
400
400
.400

350
950
350'
350
350.

350'

'350
350
350
350

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

200'
200.

15'0
150

150
150

150
150
150' '
150'
100 .

100

100

100

mo'

100
'60

'60

'W
.60
60
60

6(f'

.60
'60

60

2·7

,

.,

Ie Cdntin~s"
.' .Drain .cu~ ••.•.
... :.;fAlr\Ps}- '"

I'~~!~~

f .....f

,~
2S·t Current pa\iOri

Pa!'l

iOO·c
Case

ease

0.085
0.085
0.12
0.18
0.22

2N6766
UFN250
UFN252
UFN240
UFN242

19.0
19.0
16.0
11.0
10.0

30.0
30.0
25.0
18.0
16.0

120
120
100
72
64

150
150
150
125
125

0.4
0.4
0.6
0.8
1.2

2N6758
UFN230
UFN232
UFN220
UFN222

6.0
6.0
5.0
3.0
2.5

9.0
9.0
8.0
5.0
4.0

36
36
32
20
16

75
75
75
40
40

0.12
0.12
0.18
0.22

UFN251
2N6765
UFN253
UFN241
UFN243

19.0
16.0
16.0
11.0
10.0

30.0
25.0
25.0
18.0
16.0

120
100
100
64

150
150
150
125
125

0.4
0.6
0.6
0.8
1.2

UFN231
2N6757
UFN233
UFN221
UFN223

6.0
5.0
5.0
3.0
2.5

9.0
8.0
8.0
5.0
4.0

36
32
32
20
16

75
75
75
40
40

0.055
0.055
0.08
0.085
0.11

2N6764
UFN150
UFN152
UFN140
UFN142

24.0
25.0
20.0
17.0
15.0

38.0
40.0
33.0
27.0
24.0

152
160
132
108
96

150
150
150
125
125

0.18
0.18
0.25
0.3
0.4

2N6756
UFN130
UFN132
UFN120
UFN122

9.0
9.0
8.0
5.0
4.0

14.0
14.0
12.0
8.0
7.0

56
56
48
32
28

75
75
75
40
40

0.055
0.08
0.08
0.085
0.11

UFN151
2N6763
UFN153
UFN141
UFN143

25.0
20.0
20.0
17.0
15.0

40.0
31.0
33.0
27.0
24.0

160
124
132
108
96

150
150
150
125
125

0.18
0.25
0.25
0.3
0.4

UFN131
2N6755
UFN133
UFN121
UFN123

9.0
8.0
8.0
5.0
4.0

14.0
12.0
12.0
8.0
7.0

56
48
48
32
28

75
75
75
40
40

ance

{Ohms) . Numbers

200
200'
"J;5Q' 0.085
150 .

..

"Rbs!i1I'1t

(Amps) .(Wetts)

72

PRINTED IN U S.A.

II

POWER SUPPLY DESIGNERS' GUIDE
N·CHANNEL POWER MOSFETS
TO·220

UFN840
UFN842
UFN830
UFN832
UFN820

5.0
4.0
3.0
2.5
1.5

8.0
7.0
4.5
4.0
2.5

32
28
18
16
10

UFN630
UFN632
UFN620
UFN622
UFN610

6.0
5.0
3.0
2.5
1.5

9.0
8.0
5.0
4.0
2.5

36
32
20
16
10

75
75
40
40
20

UFN822
UFN841
UFN843
UFN831
UFN833

1.0
5.0
4.0
3.0
2.5

2.0
8.0
7.0
4.5
4.0

8
32
28
18
16

UFN612
UFN641
UFN643
UFN631
UFN633

1.25
11.0
10.0
6.0
5.0

2.0
18.0
16.0
9.0
8.0

8
72
64
36
32

20
125
125
75
75

UFN821
UFN823
UFN740
UFN742
UFN730

1.5
1.0
6.0
5.0
3.5

2.5
2.0
10.0
8.0
5.5

10
8
40
32
22

40
40
125
125
75

UFN621
UFN623
UFN611
UFN613
UFN540

3.0
2.5
1.5
1.25
17.0

5.0
4.0
2.5
2.0
27.0

20
16
10
8
108

40
40
20
20
125

UFN732
UFN720
UFN722
UFN710
UFN712

3.0
2.0
1.5
1.0
0.8

4.5
3.0
2.5
1.5
1.3

18
12
10
6
5

75
40
40
20
20

UFN542
UFN530
UFN532
UFN520
UFN522

15.0
9.0
8.0
5.0
4.0

24.0
14.0
12.0
8.0
7.0

96
56
48
32
28

125
75
75
40
40

UFN741
UFN743
UFN731
UFN733
UFN721

6.0
5.0
3.5
3.0
2.0

10.0
8.0
5.5
4.5
3.0

40
32
22
18
12

125
125
75
75
40

UFN510
UFN512
UFN541
UFN543
UFN531

2.5
2.0
17.0
15.0
9.0

4.0
3.5
27.0
24.0
14.0

16
14
108
96
56

20
20
125
125
75

UFN723
UFN711
UFN713
UFN640
UFN642

1.5
1.0
0.8
11.0
10.0

2.5
1.5
1.3
18.0
16.0

10
6
5
72
64

40
20
20
125
125

UFN533
UFN521
UFN523
UFN511
UFN513

8.0
5.0
4.0
2.5
2.0

12.0
8.0
7.0
4.0
3.5

48
32
28
16
14

75
40
40
20
20

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2-8

PRINTED IN U.S A

POWER SUPPLY DESIGNERS' GUIDE
N·CHANNEL POWER MOSFETS
10·39

~!~
Yo '

)

.,.

,

Part
Numbet$

lOO'C

1.5
1.5
2,0
3,0
3.0
4.0

UFNF430
2N6802
UFNF432
UFNF420
2N6794
UFNF422

1.5
1.5
2.0
3.0
3.0
4.0

~i

~',"
S()O,.

:500:'
400'

'.450, ,.
450"

450

450

"450',
,400'

,400'
400

.40(}·,
400

,~:;.

, '400"

400·

400

'350,.,
'350,."

'~'~'

.35q
,350,

'350

350 "
350'

35D"

260

'~.
200
200

·200

=
200'
1IiO

" 150

'1$.
150:,'

,1"!lU,'"
150,

150
150

'150

'ioo

"'tQo,'
100
100

too'
1GO

!lfIt ~~~d
Drain

~~)

sIX)"

"

~~J'lUOU!i

25"C Current

=.

(Amps)

~~)

1.75
1.5
1.5
1.0
0.95
0.9

2,75
2.5
2.25
1.6
1.5
1,4

11
11
9
65
6.5
5.5

25
25
25
20
20
20

UFNF431
2N6801
UFNF433
UFNF421
2N6793
UFNF423

1.75
1.5
1.5
1.0
0.95
0.9

2.75
2.5
2.25
1.6
1.5
1,4

11
11
9
6.5
6.5
5,5

25
25
25
20
20
20

1.0
1.0
1.5
1.8
1.8
2.5

UFNF330
2N6800
UFNF332
UFNF320
2N6792
UFNF322

2.0
1.6
1.6
1,43
1.25
1.2

3.5
3,0
3.0
2,5
2.0
2,0

14
14
12
10
10
8

25
25
25
20
20
20

3,6
3,6
5,0
1.0
1.0
1.5

UFNF310
2N6786
UFNF312
UFNF331
2N6799
UFNF333

0,85
0.80
0.70
2,0
1.6
1.6

1.35
1.25
1,15
3,5
3,0
3,0

5,5
5,5
4,5
14
14
12

15
15
15
25
25
25

1.8
1.8
2.5
3.6
3.6
5,0

UFNF321
2N6791
UFNF323
UFNF311
2N6785
UFNF313

1.45
1.25
1.2
0.85
0,80
0.70

2,5
2.0
2,0
1.35
1.25
1,15

10
10
8
5.5
5.5
4,5

20
20
20
15
15
15

0,4
0,4
0,6
0,8
0.8
1.2

2FNF6798
UFNF230
UFNF232
2N6790
UFNF220
UFNF222

3.5
3.5
2.8
2.1
2.1
1.75

5,5
5,5
4.5
3,5
3.5
3.0

22
22
18
14
14
12

25
25
25
20
20
20

1.5
1.5
2,4
0,4
0,4
0.6

2N6784
UFNF210
UFNF212
2N6797
UFNF231
UFNF233

1.45
1,4

2.25
2.2
1.8
5.5
5.5
4.5

9
9
7.5
22
22
18

15
15
15
25
25
25

0.8
0.8
1.2
1.5
1.5
2.4

2N6789
UFNF221
UFNF223
2N6783
UFNF211
UFNF213

2.1
2.1
1.75
1.45
1,4

1.1

3.5
3.5
3.0
2.25
2.2
1.8

14
14
12
9
9
7.5

20
20
20
15
15
15

0.18
0,18
0.25
0,3
0,3

2N6796
UFNF130
UFNF132
2N6788
UFNF120
UFNF122

5.0
5.0
4.5
3,5
3,5
3.0

8.0
8,0
7.0
6.0
6,0
5.0

32
32
28
24
24
20

25
25
25
20
20
20

0.4

1.1
3.5
3.5
2.8

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

'J~n

I~:

=
SoUrce

D'S&!-

Case

Case

10·39 (CONT'D)

100

100

100
60
50
50
~O

60
50

60
60

'60

{Ohms}

'8~=

.;'

~m".

~~

Part
NUmbet$.

,··60

fila:)

2.25
2.25
2.0
5.0
5.0
4.5

3.5
3,5
3.0
8.0
8.0
7.0

14
14
12
32
32
28

15
15
15
25
25
25

0.3
0,3
0.4
0.6
0,6
0.8

2N6787
UFNF121
UFNF123
2N6781
UFNF111
UFNF113

3.5
3.5
3,0
2.25
2.25
2.0

6.0
6.0
5.0
3.5
3.5
3.0

24
24
20
14
14
12

20
20
20
15
15
15

Sou,rCIi ' ,itesi&t·

100"

CUmmt

2N6782
UFNF110
UFNF112
2N6795
UFNF131
UFNF133

RD~"'"

(Volts)

0iS&!-

(Amps)

0.6
0.6
0,8
0.18
0.18
0.25

On·$tate

VQllIIP.

~~
rain

'Jow.~.

'.nee .

Peit

.: ':;',

Power
01$51·

l------",.."---j O,~I'l

(Ohmi$)" JliUmlilits
1.5
1.5

Po MAlI.

UFNA12
UFNAll

~~:=~

1.0
1.0

2,0
2.0

2.4
2.4

4 PIN DIP

,,~

2-9

R$5Ist-

. (:; .

($~~'

Pa!,!", •

N4m~'

DraIn

'~~.
,a'

~.
,;21;"1::
.,~'

'p;urr!lflt
AmpS)

1.5
2.4
0.3
0.6

UFND210
UFND213
UFND120
UFNDllO

0.6
0,45
1.3
1.0

2.5
1.8
5.2
4.0

1.0
1.0
1.0
1.0

2,4
0.4
0.8
3.2

UFND1Z0
UFND123
UFND113
UFNDIZ3

0.5
1,1
0.8
0.4

2.0
4.4
3.0
1.5

1.0
1.0
1.0
1.0

PRINTED IN U.S.A.

II

POWER SUPPLY DESIGNERS' GUIDE
NPN POWER SWITCHING TRANSISTORS
Plastic Packaging

300
400

7@2.0
7@2.0

1.2 @2.0
1.2 @2.0

1.0
1.0

4.0
4.0

0.7
0.7

2.0
2.0

TO·220
TO·220

300
400

8@2.0
8@2.0

0.6 @2.0
0.6 @2.0

0.7
0.7

3.5
3.5

0.9
0.9

2.0
2.0

TO·220
TO·220

300
400

6@5.0
6@5.0

1.5 @5.0
1.5 @5.0

1.0
1.0

3.0
3.0

0.7
0.7

5.0
5.0

TO·220
TO·220

300
400

6@8.0
6@8.0

1.5 @8.0
1.5 @8.0

1.0
1.0

3.0
3.0

0.7
0.7

8.0
8.0

TO·220
TO·220

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2-10

PRINTED IN USA

POWER SUPPLY DESIGNERS' GUIDE

II

NPN POWER SWITCHING TRANSISTORS (continued)
Metal Can Packaging
TyPe

Min.

v~

hFE@le

250
275
350

10@2.0
1O@2.0
1O@2.0

300
300
350
350
400
400
400

7@3.0
1O@ 5.0
7@3.0
1O@ 5.0
7@3.0
7@3.0
1O@ 5.0

250
300
300
300
350
400
400

Max. Switchltl~ri1e (PS)'
@Ie.,·

Max.
VClII"{tl,@le

.'.

;.

. ,
"

~,.

.

I,

Ie

1/

@Ie

Pkg.

1.0 @3.0
1.5 @2.0
1.5 @2.0

1.5
1.5
1.7

3.0
3.75
3.75

1.5
1.5
1.5

3.0
2.0
2.0

10·3
10·3
10·3

1.0
1.0
1.0
1.0
1.0
1.0
1.0

@3.0
@5.0
@3.0
@5.0
@3.0
@3.0
@5.0

0.7
0.5
0.4
0.5
0.4
0.7
0.5

4.0
2.5
4.0
2.5
4.0
4.0
2.5

0.8
0.4
0.4
0.4
0.4
0.8
0.4

3.0
5.0
3.0
5.0
3.0
3.0
5.0

10·3
10·3
10·3
10·3
10·3
10·3
10·3

15@3.0
15@3.0
7@5.0
7@5.0
12 @3.0
7@5.0
7@5.0

0.8
0.8
1.5
1.5
1.5
1.5
1.5

@3.0
@3.0
@5.0
@5.0
@3.0
@5.0
@5.0

0.6
0.6
1.0
0.4
0.6
1.0
0.4

1.6
1.6
4.0
4.0
1.6
4.0
4.0

0.4
0.4
1.0
0.4
0.4
1.0
0.4

3.0
3.0
5.0
5.0
3.0
5.0
5.0

10·3
10·3
10·3
10·3
10·3
10·3
10·3

120
200
275
300
350
400

1O@
1O@
8@
8@
6@
8@

10.0
10.0
10.0
10.0
10.0
10.0

1.0
1.5
1.5
1.0
1.5
1.0

@1O.0
@1O.0
@1O.0
@1O.0
@1O.0
@1O.0

0.3
2.0
2.0
0.6
2.0
0.6

1.0
3.5
3.5
2.5
3.5
2.5

0.2
1.0
1.0
0.5
1.0
0.5

5.0
10.0
10.0
10.0
10.0
10.0

10·3
10·3
10·3
10·3
10·3
10·3

100
300
300
350
350
400
400
400
450

12@8.0
6@ 10.0
8@ 15.0
6@ 10.0
8@ 15.0
6@ 10.0
6@ 10.0
8@ 15.0
7@ 15.0

1.0
1.5
1.0
1.0
1.0
1.0
1.5
1.0
1.5

@8.0
@1O.0
@ 15.0
@1O.0
@ 15.0
@ 10.0
@1O.0
@ 15.0
@1O.0

0.5
0.7
0.6
0.4
0.6
0.4
0.7
0.6
0.22

1.5
4.0
2.5
4.0
2.5
4.0
4.0
2.5
0.9

0.5
0.7
0.5
0.4
0.5
0.4
0.7
0.5
0.2

8.0
10.0
15.0
10.0
15.0
10.0
10.0
15.0
10.0

10·3
10·3
10·3
10·3
10·3
10·3
10·3
10·3
10·3

75
90

20 @ 10.0
20 @ 12.0

1.0 @1O.0
1.2 @ 12.0

0.5(1)
OBI)

-

0.5(2)
0.5(2)

10.0
12.0

10·3
10·3

90
120
400

20@ 15.0
20@ 15.0
1O@ 15.0

0.75 @ 15.0
0.75@ 15.0
1.5 @20.0

0.5
0.5
1.0

1.5
1.5
3.0

0.5
0.5
0.8

15.0
15.0
20.0

10·3
10·3
10·3

'3~b~

'2N5838
, 21\15839
'

'2N5840

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••••
".
.......~

007

8.~A,:

2N63G6

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'2N6307
2HIi$44

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5 .....
t~':.
:V, .. '

:

I ' '.,O;OA

•••••

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..

..

·.2NB251 ....

.. 2N6675
15.~

2N64%

2N654ti

2N6676
UMnOU
2N6617
v

•••

".;o~'.>
2N5039
.2N5038
.' 3O;OA'"

I.

2N5671

2N5672
··'VMT2003

' ;

(l)Turn-on Time
("Turn·off Time

UN)TROOE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

2-11

PRINTED IN USA

POWER SUPPLY DESIGNERS' GUIDE
SCHOTTKY BARRIER POWER RECTIFIERS

20V
30V
40V

0.45@ 1A
0.55@ 1A
0.60@ 1A

10.0

N/A

Axial
Leaded
Plastic

20V
30V
40V

0.450 @ 1A
0.475 @ 1A
0.500 @ lA

10.0

N/A

Axial
Leaded
Plastic

20V
30V
40V

0.475 @3A
0.500@3A
0.525@3A

20.0

N/A

Axial
Leaded
Plastic

20V
35V
40V
45V

0.48@ 6A

50.0

1.0

TO·220AC
(2 Lead)

20V
35V
40V
45V

0.48@ 8A

50.0

1.0

TO·220AC
(2 Lead)

20V
35V
40V
45V

0.51 @ 12A

50.0

1.0

TO·220AC
(2 Lead)

20V
35V
40V
45V

0.53@ 16A

50.0

2.0

TO·220AC
(2 Lead)

30V
40V

0.86@ 157A

250.0

2.0

00·5
(00·223AB)

0.6@60A

200.0@35V

2.0

20V
35V
45V
50V

50.0
0.6@ 60A

2.0

00·5
(DO·223AB)

75.0

"Elevated Temperature

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2-12

PRINTED IN

u.s

A

POWER SUPPLY DESIGNERS' GUIDE

II

SCHOTTKY BARRIER POWER RECTIFIERS (continued)
Schottky Center-Tap Rectifiers
:

~,

VRWM

Type

.12A
USD620C

US0635C
US0640C·
\)SD645C

VI'~fF

. htfltVr'
(m,b;

~~'.,.
":(.4J
•. , ;'.'..

:,~

'Pki .

20V
35V
40V
45V

0.6@ 12A

50.0

1.0

TO·22OAB

20V
35V
40V
45V

0.6@ 16A

50.0

1.0

TO·220AB

20V
35V
45V

0.6@ 20A

50.0

2.0

TO·3
Center·Tap

45V @ Tj =25°C
35V @ Tj = 125°C

0.6@20A

100.0@35V

2.0

TO·3
Center·Tap

40V
45V
50V

0.63 @ 60A

75.0

2.0

TO-3 Base
(Top Connector
Module)

.

. ··lGA
U507200

U~a5C
U 74(:)C
U50745C

.

'

3OA .
USD320C

US0335C

US0345C

:.50241
"

.

..

lOOA

~i5}!8'
BOA'
.USM2.Q04OC .
USM~

M2

,

USM200?9C.·.·

40V
45V
50V

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

0.64@
100A

125.0

2·13

2.0

Power
Block
(see datasheet)

PRINTED IN USA

POWER SUPPLY DESIGNERS' GUIDE
PIN JUNCTION RECTIFIERS
Low Voltage, Ultra-Fast Recovery (trr :::; 50ns)

50V
100V
150V

.895@ 1A

0.05

25

Axial Leaded
Glass

50V
100V
150V

.895@2A

0.05

25

Axial Leaded
Glass

50V
100V
150V

.850 @ 6A

0.15

30

Axial Leaded
Glass

50V
100V
150V
200V

.895@ 8A

0.15
0.15
0.15
0.50

35

TO·220AC
(2 Lead)

50V
100V
150V
200V

.830@ 16A

0.80
0.80
0.80
1.00

35

TO·220AC
(2 Leacl)

50V
100V
150V

.825@25A

4.0

35

00·4
(DO·203AA).

50V
100V
150V

.840@ 70A

30.0

50

00·5
(00·203AB)

High Voltage, Ultra-Fast Recovery (trr :::; 50ns)

200V
300V
400V

1.15 @ 1A

0.20

50

Axial Leaded
Glass

200V
300V
400V

1.15 @ 3A

0.50

50

Axial Leaded
Glass

200V
300V
400V

1.15 @ 20A

10.0

50

DO·4
(DO·203AA)

200V
300V
400V

1.15 @ 50A

30.0

50

00·5
(00·203AB)

·Elevated Temperature
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2-14

PRINTED IN U.S.A

POWER SUPPLY DESIGNERS' GUIDE

II

PIN JUNCTION RECTIFIERS (continued)
Ultra-Fast Recovery Center-Tap Rectifiers (trr:::; 50ns)

50V
100V
150V
200V
50V
100V
150V
200V
300V
400V

.895 @8A

0.15
0.15
0.15
0.50

35

TO·220AB

.825@ 15A

4.0

35

TO·3
Center·Tap

1.15 @ 15A

10.0

50

TO·3
Center·Tap

100

Axial Leaded
Glass

Super-Fast Recovery Rectifiers (trr = lOOns)

50V
100V
150V

.895@ 1A

50V
100V
150V

.895@ 5A

.15

100

Axial Leaded
Glass

50V
100V
150V
200V

.945@8A

.15

100

TO·220AC
(2 Lead)

50V
100V
150V

.830@ 20A

4.0

100

(DO·203AA)

50V
100V
150V

.850@60A

30.0

100

DO·203AB

50V
100V
150V
200V

.945 @8A

.15

100

TO·220AB

50V
100V
150V

.830 @ 12.5A

4.0

100

TO·3
Center·Tap

.05
00·4

00·5

"Elevated Temperature

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (7101 326-6509 • TELEX 95-1064

2-15

PRINTED IN USA.

MOTOR CONTROL DESIGNERS' GUIDE
Motor Control Circuits
2A, 36V, 30KHz,
H-Bridge Motor Driver

•
•
•
•

Four Channel
Push-Pull Drivers
for Inductive Loads

•
•
•
•
•
•

Dual PWM Solenoid
Driver and
Stepper Motor Driver

5A;60V,BOV,lOOV
. H-Bridge Hybrid Circuit

Switched Mode
Controller for
DC Motor Drive

External Loop Adjustment
Single Power Supply (lB-36V)
Input Signal Symmetric to Ground
Thermal Protection

lA Output per Channel (2A peak non-repetitive)
Supply Voltage to 36V
Inhibiting Facility
Thermal Protection
High Noise Immunity
E-Version Provides for External
Emitter Sense Resistors
• Compatible with Standard TTL Logic Inputs
•
•
•
•
•

3A Peak Current Per Driver
Supply Voltage to 40V
Current Limiting
Thermal Protection
Compatible with Standard TTL Logic Inputs

• Designed and Characterized for Inductive Loads
as Stepper Motors, DC Motor Drives,
Full Bridge DC Converters
• Fast Switching Times with
Low (5mA) Drive Current
• Electrically Isolated IB-Pin Dip
with Integral Heat Spreader
• Compatible with Automatic Insertion
• Single or Dual Supply Operation

• ± 2.5 to ± 20V Input Supply Range
• ± 5% Initial Oscillator Accuracy;
± 10% Over Temperature

15 Pin
Power SIP

L293
16 Pin
"Batwing" Dip

L293E
20 Pin
"Batwing" Dip
15 Pin
Power SIP

IB Pin DIL with
Integral Heat
Spreader

IB Pin
Dip

• Pulse-by-Pulse Current Limiting
• Under-Voltage Lockout
• Uncommitted PWM Comparators for
Design Flexibility
Stepper Motor
Drive Ci rcu it

Half-Step and Full-Step Mode
Bipolar Constant Current Chopper Drive
Built-In Protection Diodes (Schottky)
Wipe Range of Current Control 5-1000mA
Wide Voltage Range 1O-45V
Designed for Unregulated Motor
Supply Voltage
• Thermal Overload Protection

•
•
•
•
•
•

16 Pin
Dip

Note: U2TA506,8 & 10 and U2TA606, 8 & 10 TD-92 Darlingtons are appropriate for driving DC brushless motors and other inductive loads.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

2-16

PRINTED IN U.S.A.

MILITARY DESIGNERS' GUIDE

II

SILICON RECTIFIERS
Schottky

45V
45V

0.44V @ 5A (pk)
,0.47V @ lOA (pk)

15mA @ 45V (pk)
20mA @ 45V (pk)

1553*
1554*

00-4
00-5

• Series available as JAN, JANTX and JANTXV

High Efficiency, Fast Switching
:~.«,"")'

.-!,~

,. :.

~

1W~M>'

OUTM

.-

..'

,;Jll

~'

VuM

!'::~:,i11£-':'"
.-,:':=\
.:;

If:i~;;.

VOl.rA(IJ ,.

2.5A

50V
100V
150V

.875V
@
1A

6.0A

50V
100V
150V

20A

70A

/::),~

','tNSe09
."l~n"

;~

~,

=
'

.;:

..

'

,~

>."",'

,

,::":DiI:;::t ~:Ci~:~~.

'.

25n5

Axial
Axial
Axial

.875V
@
4A

30n5

Axial
Axial
Axial

50V
100V
150V

.900V
@
lOA

35n5

00-4
00-4
00-4

50V
100V
150V

.975V
@
70A

50n5

00-5
00-5
00-5

',~l

1477·
1477
1477
1477*
1477
1477
1478"
1478
1478
1550*
1550
1550

• Series available as JAN, JANTX and JANTXV

General Purpose, Fast Recovery
;.'::--

: .~"', .:

·t""~.

,

.~
,

Axial
Axial
Axial

'<"
,

.

1A
1A
1A

200V
400V
600V

1.6V @ 3A
1.6V @ 3A
1.6V @ 3A

150n5
250n5
250n5

Axial
Axial
Axial

3A
3A
3A
3A

100V
200V
400V
600V

1.5V @ 9A
1.5V@9A
1.5V @ 9A
1.5V @ 9A

150n5
200n5
250n5
400n5

Axial
Axial
Axial
Axial

3A
3A
3A
3A
3A
3A

50V
100V
200V
400V
500V
600V

1.5V @ 9A
1.5V @ 9A
1.5V@9A
1.5V@ 9A
1.5V @ 9A
1.5V @ 9A

150n5
150n5
150n5
150n5
250n5
400n5

Axial
Axial
Axial
Axial
Axial
Axial

,

1359*
1359
1359
1429*
1429
1429
1424*·
1424
1424
1424
1411*
1411
1411
1411
1411
1411

• Series available as JAN, JANTX and JANTXV
•• Series available as JAN and JANTX

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

2-17

PRINTED IN U.S A.

MILITARY DESIGNERS' GUIDE
SILICON RECTIFIERS (continued)

General Purpose. Standard Recovery

<{: ,".:

:&~{.i~:~l :'::;~L'.
~,:,~~~.f(.':;!·;.

l.OV@ 20mA
l.OV@ 7mA
l.OV@ 3mA
70V
180V

l.OV@ 100mA
l.OV@ 100mA

225mA
165mA
120mA
2A
2A

DO-7
DO-7
DO-7

/193'"
/193
/193

DO-7
DO-7

1118*'
1118
1256**1240"
1240'
1240"
1240'
1286'
1286
1286
1286
1286
1427'
1427
1427
1427
1228"
1228
1228
1228
1420'
1420
1420
1420

40mA

175V

l.OV@ lOmA

400mA
400mA

270V
270V

l.OV@ 400mA
l.OV@400mA

5A
5A

DO-7
DO-35

400mA
400mA

480V
480V

l.OV@400mA
l.OV@400mA

5A
5A

DO-7
DO-35

1A
1A
1A
1A
1A

200V
400V
600V
800V
1000V

1A
1A
1A
1A

500mA

DO-7

l.3V @ 3A
l.3V@ 3A
l.3V @ 3A
l.3V @ 3A
l.3V@ 3A

25A
25A
25A
25A
25A

Axial
Axial
Axial
Axial
Axial

200V
400V
600V
800V

l.3V@
l.3V@
l.3V@
l.3V@

3A
3A
3A
3A

30A
30A
30A
30A

Axial
Axial
Axial
Axial

2A
2A
2A
2A

200V
400V
600V
800V

l.1V
l.1V
l.1V
l.1V

1A
1A
1A
1A

20A
20A
20A
20A

Axial
Axial
Axial
Axial

3A
3A
3A
3A

200V
400V
600V
800V

l.2V @ 9A
1.2V @ 9A
1.2V@9A
l.2V @ 9A

100A
100A
100A
100A

Axial
Axial
Axial
Axial

@
@
@
@

• Series available as JAN, JANTX and JANTXV
•• Series available as JAN and JANTX
••• Series available as JAN only

Radiation Tolerant Rectifiers
.;'"

..

·!JI~E;;.··

2A
2A
2A
2A
2A

50V
100V
150V
200V
250V

1.0 @
l.0 @
1.0 @
1.0 @
l.0 @

1A
1A
1A
1A
1A

20A
20A
20A
20A
20A

>10"
>10"
>10"
>10"
>10"

Axial
Axial
Axial
Axial
Axial

25A
25A
25A
25A
25A

>10"
>10"
>10"
>10"
>10"

Axial
Axial
Axial
Axial
Axial

High Efficiency. Center·Tap Rectifiers and Doublers

200V
300V
400V
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (6171 861-6540
TWX (710) 326-6509 • TELEX 95-1064

35ns

30A

400A

TO-3
TO-3
TO-3

50ns

30A

400A

TO-3
TO-3
TO-3

1.15V
@

15A

2-18

PRINTED IN U.S A

'

MILITARY DESIGNERS' GUIDE

II

SWITCHING DIODES
Low Current
-,

MAXIMUM
, TYPE

IN251
lN662
INfi63"
IN914
IN3064
IN307()
IN3595
lN36QO
lN4148
IN414!H
1 N415Q. 1
IN4153
IN41S3-1
IN4454
1N4454-1
IN4500
IN4531
IN4,!i'32
IN4534
IN493tt'
IN4938-.1

OUTf'UT
CURRENT

VawM

14mA
40mA
100mA
75mA
75mA
200mA
150mA
200mA
150mA
150mA
200mA
150mA
150mA
200mA
200mA
300mA
125mA
125mA
150mA
150mA
150mA

40V
SOV
SOV
100V
75V
200V
150V
75V
100V
100V
75V
75V
75V
75V
75V
BOV
100V
75V
75V
250V
250V

:

REVERSE

FORWARD
VOLTAGE

RECOVERY
TIME

l.OV @5mA
LOV@ lOmA
LOV@ 100mA
LOV@ lOmA
LOV@ lOmA
l.OV@ 100mA
,SOV @ 10mA
,74V@ lOmA
l,OV@ lOmA
LOV@ 10mA
,74V@ 10mA
,SBV@20mA
,SSV@20mA
l.OV@ lOmA
l.OV @ lOmA
.77V@20mA
l.OV @ 10mA
l.OV @ lOmA
,SBV @ 20mA
l.OV @ 100mA
l.OV @ 100mA

30ns
500ns
500ns
5ns
4ns
50ns
3ps
4ns
5ns
5ns
4ns
4ns
4ns
4ns
4ns
6ns
Sns
4ns
4ns
50ns
50ns

'PACKAIUl ,',

,"
~

.. -

00-7
00-7
00-7
00-35
00-7
00-35
00-7
00-7
00-35
00-35
00-35
00-35
00-35
00-35
00-35
00-35
00-34
00-34
00-34
00-7
00-7

,

.'(+19IlO8'" ,
I1SS'"

1256'"
1256'"
IU6"
1144"
1169"
1241'
1231"
1116'

IU6'
1231'

1337'
1337'
1144"
1144'
1403'
IU6'
1144'
1337"
1169"
1169"

• Series available as JAN, JANTX and JANTXV
•• Series available as JAN and JANTX
••• Series available as JAN only

SWITCHING REGULATOR POWER OUTPUT CIRCUITS
INPUT1OUTf'UT
VOLTAGE

POI.ARIlY

5A

60V
SOV
100V
60V
SOV
100V

Pos,
Pos,
Pos.
Neg,
Neg,
Neg,

15A

60V
SOV
100V
60V
BOV
100V

Pos.
Pos,
Pos,
Neg,
Neg,
Neg,

60V
SOV
100V
60V
SOV
100V

Pos.
Pos.
Pas.
Neg,
Neg,
Neg.

30A

30V
40V

ptCSOi

BA

PICSI0
PICSll

BA

TYPE
PIC600
PIC601
PIC602
PIC610
PIC611
PIC612
PIC625
PIC626
.PlC627
PIC635
PIC636
PIC637

OUTPUT
CURRENT, PIC.

PIC645

PIC646
PIC647
PIC6S5
PIC6S6
PIC657
PIC730
PIC740
PICSOQ

20A

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

FALL-TIME
VOLTAGE CUIIIIENT
(V)

'(mI),

75

150

175

300

300

300

150

300

Off.STm:

VOI.T.,C~,
{V) ,(I),;.

....
...

l.5@2

4 PIN
TO-66
(Isolated)

l.5@ 7

4 PIN
TO-66
(Isolated)

l.5 @ 7

3 PIN
TO-3

300

300

Pas.
Pas,

350

300

l.0 @ 20

3 PIN
TO-3

350V
400V

Pas,
Pas,

200

200

l.5 @ 5

4 PIN
TO-66
(Isolated)

350V
400V

Neg,
Neg.

200

200

l.5@ 5

4 PIN
TO-66
(Isolated)

2-19

'(

~:

OIJrM··'
CURREN'r
(A)

POLARITY

..'.. ·.UCl17:K '
" "' "; 'UC217K .
,';;',UC317K

1.5A

Pos.

Adjustable from 1.2V to 37V

TO-3
TO-3
TO-3

UC137K
" .lJC237K .
"'uc337K

1.5A

Neg.

Adjustable from -1.2V to -37V

TO-3
TO-3
TO-3

3.0A

Pos.

Adjustable from 1.2V to 33V

TO-3
TO-3
TO-3

<

•..•.•.•

..._<

Three Terminal Voltage Regulators, Fixed, Positive*

.<.\.31g=~~~£$"

1.5A

Pos.

5V ± 1%

12V ± 1%

15V ± 1%

TO-3
TO-3

:··;'··Pl;1.,URIES

1.5A

Pos.

5V ± 4%

12V ± 4%

15V ± 4%

TO-3
TO-3

i 7UC1~ SERI£$

Three Terminal Voltage Regulators, Fixed, Negative*

1.5A

Neg.

-5V ± 1%

-12V ± 1%

-15V ± 1%

TO-3
TO-3

1.5A

Neg.

-5V ± 4%

-12V ± 4%

-15V ± 4%

TO-3
TO-3

*MIL-STO-883 Screening

MIL-ST0-883 Screening Tests

Unitrode offers all of the above devices screened to MIL·STD-883,
customer requirements, and will perform tests as specified by
MIL·M·3851O.

• Internal Visual Pre or Post Cap
• Stabilization Bake
• Temperature Cycling

When ordering MIL·STD-883 Screening, specify:

• Constant Acceleration

• Prime electrical and military temperature range, generic
part number and package type

• Hermeticity
a) Fine
b) Gross

• Class of 883 screening (class A, B or C)

• Pre·Burn·in Electrical Test
• Burn·in Test
• Final Electrical Test
a)
b)
c)
d)

DC@25°C
DC @ Max. and Min. Rated Temperature
Dynamic @ 25°C
Functional @ 25°C

• Radiographic
• Qualification and Quality Conformance Testing
• External Visual

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

2-21

PRINTED IN U.S.A

MILITARY DESIGNERS' GUIDE
BRIDGE RECTIFIERS
. 40Hz· 5kHz

lOA

200V
400V
600V

VF @ 15.7A. 1.35V Max.
IA@ VA. 2J1A Max.
ISUAGE. 100A

1469'

AC~AC

25A

100V
200V
400V
600V

VF @ 39A. 1.4V Max.
IA@VA. 2pA Max.
IstJAGE. 150A

1446'

oc

25A

200V
400V
600V

VF @ 39A. 1.3V Max.
IA@ VR. 3J1A Max.
ISURGE. 150A

/483**

AC~AC
Single Phase

Three Phase

• Series available as JAN and JANTX
•• Series available as JANTX only

HIGH VOLTAGE DOORBELL" MODULES
40Hz· 5kHz

Doorbell" is a registered trademark of Unitrode Corporation
• Series available as JAN only

SENSISTORS

II

Sensistors" is a registered trademark of Unitrode Corporation

POWER MOSFETS
N·Channel

14
9

100
200
400
500

24
19
9

7.75

5.5
4.5
38
30
14
12

152
120
56
48

150
150
150
150

/542A
/542A
/542A
/542A
/543A
/543A
/543A
/543A

• Series available as JAN. JANTX and JANTXV.
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2-22

PRINTED IN U.S.A.

MILITARY DESIGNERS' GUIDE

.......

NPN POWER SWITCHING TRANSISTORS
~.,

~

2A
2A
2A
2A

200V
300V
200V
300V

3A
3A
3A
3A

60V
SOV
60V
SOV

5A
5A
5A
5A
5A
5A
5A
5A
5A
5A
5A

..

.M•
• • IC~
40@.5A
25@ .5A
40@.5A
25@ .5A
20@
20@
40@
40@

~.~'

__:
>JIIUJI
.•
....:;~~,;

.4V@ 1A
.4V@ 1A
.4V @ 1A
.4V@ 1A

1A
1A
1A
1A

.5V@2A
.5V@2A
.5V@2A
.5V@2A

SOV
SOV
SOV
SOV
SOV
SOV
SOV
200V
300V
200V
300V

40@ 1A
40@ 1A
40@ 1A
40@ 1A
80@ 1A
40@ 1A
SO@lA
40@ 1A
25@lA
40@ 1A
25@ 1A

1.0V@ 1A
.25V@ 1A
.25V@ 1A
.25V@ 1A
.25V@ 1A
.25V@ 1A
.25V@ 1A
.4V @3A
.4V @3A
.4V @3A
.4V @3A

SA
SA
SA
SA
SA
SA

250V
350V
300V
300V
400V
400V

15@3A
12@3A
7@5A
7@5A
7@5A
7@5A

0.SV@3A
1.5V@ 3A
1.5V@ 3A
1.5V @ 3A
1.5V@5A
1.5V @ 5A

lOA
lOA

70V
120V

1O@ lOA
10 @ lOA

15A
15A
15A

100V
300V
400V

20A
20A
30A
30A

0.4.115
0.6.115
0.4.115

TO·66
TO·66
TO-5
TO-6

0.6.115

1.2.115

TO-5
TO-5
TO-5
TO-5

1.2.115

1.2.115
1.2.115

TO-59
TO-59
TO-U1
TO-U1
TO-1U
TO-59
TO-59
TO-66
TO-66
TO-5
TO-5

0.3.115
0.3.115

0.S.u5
1.0.115

0.S.u5
1.0.115
0.S.u5
1.0.115
0.S.u5
1.0.115
0.4.115
0.4.115
0.9.115
0.9.115
0.4.115

TO-3
TO-3
TO-3
TO-3
TO-3
TO-3

0.6V@ 5A
1.0V@ lOA

0.4.115
0.2.115

TO-5
TO-3

12@SA
12@5A
12@5A

1.0V@SA
1.5V @ lOA
1.5V@ lOA

0.3.115

TO-3
TO-3
TO-3

90V
75V

20 @ 12A
20@ lOA

1.2V @ 12A
1.0V@ lOA

90V
120V

20@ 15A
20 @ 15A

0.75V @ 15A
0.75V@ 15A

0.4.115

0.7.115

0.7.115
0.5.115

0.5.115
0.5.115
0.5.115

:~i\~ls~:
1454*
1454
1454
1454
1393*
1393
1393
1393
1277**
1315*
1315
1374*
1374
1374
1374
1455*
1455
1455
1455
149S
149S
N/A
N/A
N/A
N/A

1394*
N/A
N/A

TO-3
TO-3

1525
1525
1439*
1439

TO-3
TO-3

N/A
N/A

• Series available as JAN, JANTX and JANTXV
•• Series available as JAN and JANTX

POWER DARLINGTONS
5A
5A
5A
5A

SOV
150V

2000
1000
2000
1000

sov

150V

TO-33
TO-33
TO-66
TO-66

1472**
1472
1472
1472

TO-1S

1493*

•• Series available as JAN and JANTX

PROGRAMMABLE UNIJUNCTION TRANSISTORS
1.5mA @ RG = 200n
• Available as JAN, JANTX and JANTXV
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
,.TWX (710) 326·6509 • TELEX 95-1064

2-23

PRINTED IN U.S.A

•

MILITARY DESIGNERS' GUIDE'
POWER ZENERS AND TRANSIENT SUPPRESSORS

• Series available as JAN, JANTX and JANTXV

THYRISTORS
Silicon Control Rectifiers

1.25A
1.25A
1.25A
1.25A
1.25A

30V
60V
lOOV
150V
200V

200p.A
200p.A
200p.A
200p.A

O.8V
O.8V
O.8V
O.8V
O.8V

TO-9
TO-9
TO-9
TO-9
TO-9

1198'··
1198
1198

1.6A
1.6A
1.6A
1.6A
1.6A
1.6A
1.6A

50V
lOOV
150V
200V
250V
300V
400V

20p.A
20p.A
20p.A
20p.A
20p.A
20p.A
20p.A

O.6V
O.6V
O.6V
O.6V
O.6V
O.6V
O.6V

TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39

1276"
1276

N/A
/198

N/A

1276
N/A

1276
1276

• Series available as JAN, JANTX and JANTXV
•• Series available as JAN and JANTX
••• Series available as JAN only
t Available in "A" and non "A" versions

Ultra Fast Switching

Radiation Resistant

t Post 3xlO" NVT
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2-24

PRINTED IN U.S A.

LINEAR INTEGRATED CIRCUITS

\'

3-1

~

•

3·2

LINEAR INTEGRATED CIRCUITS

PRODUCT SELECTION GUIDE

Pulse Width Modulators

"

/

x
X

PERfORMANc,ECHAAACrElUS'rJCS;

X lOOmA

300kHz X

X X X X 200mA

500kHz X

100mA
OAA

16 Pin DIP

X

16 Pin DIP

500kHz

X X X

16 Pin DIP

500kHz

X X X

16 Pin DIP

X X X X X X 100mA

400kHz

X X X

X

18 Pin DIP

X

300kHz X

X

X

16 Pin DIP

X X X X

X

Pulse

X X X X

X

lOOmA
O.4A
Pulse

200mA

18 Pin DIP

16 Pin DIP
X

x

X

300kHz X

200mA

X
18 Pin DIP

X X X X X X 200mA

X 500kHz

X X X X

X

16 Pin DIP

x

X X X X X 200mA

X 500kHz

X X X X

X

16 Pin DIP

X X X X X X 200mA

X 500kHz

X

X X N/A

lOOmA
1A

X 500kHz

X

X

X

X X X

X

18 Pin DIP

N/A X

8 Pin DIP

Pulse

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-3

PRINTED IN

u.s

A

LINEAR INTEGRATED CIRCUITS

PRODUCT SELECTION GUIDE

Power Supply Support Functions
Power Supply
Supervisory Circuit,
Monitors and Controls
Power Supply Output

- Dual High Current
MOSFET Compatible
Output Driver

•
•
•
•
•
•
•
•

Over/Under-Voltage, and Current Sensing Circuits
Programmable Time Delays
SCR "Crowbar" Drive of 300mA
Optional Over-Voltage Latch
Internal 1% Accurate Reference
Remote Activation Capability
Uncommitted Comparator
Inputs for Low Voltage Sensing (UC1544 series only)

•
•
•
•
•
•
•
•
•

Dual, 1.5A, Totem Pole Outputs
Parallel or Push-Pull Operations
Single-Ended to Push-Pull Conversion
Internal Overlap Protection
Analog, Latched Shutdown
High-Speed, Power MOSFET Compatible
Thermal Shutdown Protection
5 to 40V Operation
Low Quiescent Current

16 Pin
DIL
(1543 Series)

18 Pin
DIL
(1544 series)
16 Pin
DIL

High Efficiency
Linear Regulator,
Low Input-Output
Differential

• Minimum V,N-VOur less than O.5V at 5A Load
with External Pass Device
• Equally Usable for either Positive
or Negative Regulator Design
• Adjustable Low Threshold Current Sense Amplifier
• Under- and Over-Voltage Fault Alert with
Programmable Delay
• Over-Voltage Fault Latch with lOOmA
Crowbar Drive Output

16 Pin
DIL

Isolated Feedback
Generator
Stable and Reliable
Alternative to an
Optical Coupler

• An Amplitude-Modulation System for Transformer
Coupling an Isolated Feedback Error Signal
• Internal 1% Reference and Error Amplifier
• Loop Status Monitor
• Low-Cost Alternative to Optical Couplers
• Internal Carrier Oscillator Usable to 5MHz
• Modulator Synchronizable to an External Clock

14 Pin
DIL

Quad Supply and
Line Monitor
Precision System

•
•
•
•
•
•

Monitor Four Power Supply Output Voltage Levels
Both Over- and Ul)der-Voltage Indicators
Internal Inverter for Negative Level Sense
Adjustable Fault Window
Additional Input for Early Line Fault Sense
On Chip, High-Current General Purpose OP-AMP

18 Pin
DIL

Bridge
Transducer
Switch

•
•
•
•
•
•
•
•
•

Dual Matched Current Sources
High-Gain Differential SenSing Circuit
Wide Common-Mode Input Capability
Complimentary Digital Open-Collector Outputs
Externally Programmable Time Delay
Optional Output Latch with Reset
Built-in Diagnostic Activation
Wide Supply Voltage Range
High Current Heater Power Source Driver

16 Pin
DIL

Functional Circuit

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-4

PRINTED IN U.S.A

PRODUCT SELECTION GUIDE

LINEAR INTEGRATED CIRCUITS
Voltage Regulators
Three Terminal Voltage Regulators, Adjustable
OUTPUT

TYPE

ClIlWNT
(A)

f'OLARrtY

"

-

"

,-

l'ACKME'

UC117K/lM 117K
l!C217K/LM217K
*UC317KIlM317K

1.5A

Pos_

Adjustable from 1.2V to 37V

TO-3
TO-3
TO-3

UC137KIlM 137K
. UC237K/LM237K
• lIC337K/LM337K

1.5A

Neg.

Adjustable from -1.2V to -37V

TO-3
TO-3
TO-3

UCl50K/LM 150K
UC250K/LM250K
.. UC350K/LM350K

3.0A

Pos_

Adjustable from 1.2V to 33V

TO-3
TO-3
TO-3

Three Terminal Voltage Regulators, Fixed, Positive
,OUTPUT ___
. .

(V)

,

'

,',

REGULATED t)UTf'UT. VOLTAGt!

et.lRRENT

TYPE

UC7800AKlLM14OAK SERIES
.' *UC7800ACKlLM340AK SERIES
, UC18OOK1LMl40K SERIES
UC7800cK/LM340K SERIES

*

'"

.. ,..

.IiEGUv.TEJrO'::f>UTVCtl1AG£'

.,

.

HC

1'A~

(A)

POLAltfTV

1.5A

Pas.

5V ± 1%

12V ± 1%

15V ± 1%

TO-3
TO-3

1.5A

Pas,

5V ±4%

12V ± 4%

15V ± 4%

TO-3
TO-3

Three Terminal Voltage Regulators, Fixed, Negative
,.",

OUTPUT

TYPE

et.lRRENT

.

REGULATED ouTPUTYOLTAGE
,

(V).',"

"

(A)

)()LAltfTV

UCI900AKlLM120K SERIES
.-- .. UC7900ACK SERIES

1.5A

Neg.

-5V ± 1%

-12V ± 1%

-15V± 1%

TO-3
TO-3

UC7900K SERIES
*UC7900CK/LM32QK SERIES

1.5A

Neg,

-5V ± 4%

-12V ± 4%

-15V ± 4%

TO-3
TO-3

,

P~E

• Also available in 10·220 package.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-5

PRINTED IN U S.A

II

LINEAR INTEGRATED CIRCUITS

PRODuct SELECTION GUIDE

Motor Control Circuits
."

OESCRIPTION"

L292

2A, 36V, 30KHz,
H-Bridge Motor Driver

•
•
•
•

Four Channel
Push-Pull Drivers
for I nductive Loads

•
•
•
•
•
•

L293f293E
,

..

,'"

-_.

,
,

,

TYP£

--

l295

;

UCl637/2637/3637

Dual PWM Solenoid
Driver and
Stepper Motor Driver

Switched Mode
Controller for
DC Motor Drive

_.

. KEYF~RES:

External Loop Adjustment
Single Power Supply (18-36V)
Input Signal Symmetric to Ground
Thermal Protection

lA Output per Channel (2A peak non-repetitive)
Supply Voltage to 36V
Inhibiting Facility
Thermal Protection
High Noise Immunity
E-Version Provides for External
Emitter Sense Resistors
• Compatible with Standard TIL Logic Inputs

•
•
•
•
•

3A Peak Current Per Driver
Supply Voltage to 40V
Current Limiting
Thermal Protection
Compatible with Standard TIL Logic Inputs

• Single or Dual Supply Operation

• ± 2.5 to ± 20V Input Supply Range
• ± 5% Initial Oscillator Accuracy;
± 10% Over Temperature

~~,
15 Pin
Power SIP

L293
16 Pin
"Batwing" Dip

L293E
20 Pin
"Batwing" Dip
15 Pin
Power SIP

18 Pin
Dip

• Pulse-by-Pulse Current Limiting
• Under-Voltage Lockout
• Uncommitted PWM Comparators for
Design Flexibility

.
Uct7l7/UC37V

Stepper Motor
Drive Circuit

•
•
•
•
•
•

Half-Step and Full-Step Mode
Bipolar Constant Current Chopper Drive
Built-In Protection Diodes (Schottky)
Wipe Range of Current Control 5-1000mA
Wide Voltage Range 1O-45V
Designed for Unregulated Motor
Supply Voltage
• Therma I Overload Protection

16 Pin
Dip

Note: U2TA506, 8 & 10 and U2TA606, 8 & 10 TO-92 Darlingtons are appropriate for driving DC brush less motors and other inductive loads.

UN ITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-6

PRINTED IN USA

LINEAR INTEGRATED CIRCUITS

L292

Switchmode Driver for DC Motors
FEATURES

DESCRIPTION

• Driving capability: 2A, 36V, 30KHz

The L292 is a monlithic LSI circuit in a 15-lead Multiwatt'" package. It is intended to
drive DC motors controlling positioning devices such as used in typewriters, printers,
plotters and other computer peripherals.

• Two logic chip enable inputs
• External loop gain adjustment
• Single power supply (18 to 36V)
• Input signal symmetric to ground
• Thermal protection

The device contains a level shifter, triangle waveform oscillator, error amplifier, PWM
comparator, current sensing amplifier, H-bridge output stage with a 2A, 36V driving
capability and two output enable inputs. Protection circuitry includes under-voltage
output inhibit and thermal protection.

ABSOLUTE MAXIMUM RATINGS

THERMAL DATA

Power Supply, Vs ........................................ 36V
Input Voltage, VI ................................ -15 to +VsV
Inhibit Voltage, Vinhibil ............................... 0 to VsV
Output Current, 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Power Dissipation (Tease = 75°C) .................. 25W
Storage and Junction Temperature, Ts1g ........ -40 to +150°C
Thermal Resistance Junction-Case, 8 J c ............... 3°C/W

Thermal Resistance Junction-Case, 8 JC .••.•.•.•. 3°C/W max

BLOCK DIAGRAM
+v,
470pF

cr
lOOnf,;.

2

r---- --- - --------- - --I
I

=f_ RS,

14

---I
I
I
I

L292

1l

10

4_

12

CE2
l5kQ

13
GEl

r1. 5nF
-;:' CT

3-7

~UNITRDDE

•

L292

CONNECTION DIAGRAM

MECHANICAL DATA
V PACKAGE

-

MOTOR

IE=?R.2
INHIBIT(CE1)

11===== 6~~\~lTW)E2)
11===:::::' gD~~Mf~RR AMPL.)

I~
I

!~~~~~~ ~Np~T
(ERR. AMPL.)
INPUT (LEVEL SHIFT)

·11-

OUTPUT C.S.A.

11===== ~~~P. INPUT
II====- ~.JTOR
Dimensions in millimeters

ELECTRICAL CHARACTERISTICS (TA

=25°C; fo•c =20KHz unless otherwise specified)
SYMBOL

PARAMETER
Supply Voltage

V.

Quiescent Drain Current

Id

Input Offset Voltage (Pin 6)

Yo.

MIN.

TEST CONDITIONS

TYP.

18

V. = 20V (offset null)

30

V. = 36V, 10 = 0

Vlnh. L

Inhibit Input Voltage (Pin 12, 13)

Input Current (Pin 6)

linh. L

Vlnh. (L) = 0.4V

linh. H

Vinh. (H) = 3.2V
VI = +8.8V

Input Voltage (Pin 6)

VI

Output Current

10

RS1 = RS2 = 0.20

VD

(including sensing resistors)

Sensing Resistor Voltage Drop

VRS
10
Vi

Tj = 150°C, 10 = 2A

Frequency Range (Pin 10)

mA

±350

mV

2

V

-100

pA

0.5

mA

V

10 = -2A

-9.1

V

±2

A

10 = 2A

220

240

5

V

3.5

V

0.44

V

260

mA/V

mAIV

120

RS1 = RS2 = 0.40
1

foac

pA
mA

9.1

10= 1A
RS1 = RS2 = 0.20

10
-1.8

10 = 2A

VI ± 9.8V, RS1 = RS2 = 0.20

Total Drop Out Voltage

Transconductance

V

50

V

VI = -8.8V

Ii

UNITS

36

3.2

Vinh. H
Inhibit Input Current

MAX.

30

KHz

TRUTH TABLE
Vlnhibit
Pin 12

Pin 13

L
L
H
H

L
H
L
H

Output Stage
Condition
Disabled
Normal Operation
Disabled
Disabled

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3-8

PRINTED IN U.S A

L292

FUNCTIONAL DESCRIPTION
The error signal input has been designed to accept a bidirectional
error signal symmetrical to ground. The level shifter converts the
± error signal into a single positive signal with the aid of an
internally generated SV reference. This same reference voltage
supplies the triangle wave oscillator whose frequency is fixed by
the external RC network (RT, CT . pins 11 and 10) where:
f esc

=

It is possible to synchronize two L292s, if desired, using the
network shown in Figu re 1.

1
2RC

(with R 2:: S.2KQ)

The oscillator determines the switching frequency of the output
stage and should be in the range 1 to 30KHz.
Motor current is regulated by an internal loop in the L292 which is
performed by the resistors RS1, RS2 and the differential current
sense amplifier, the output of which is filtered by an external RC
network and fed back to the error amplifier.

Figure 1.

The choice of the external components in this RC network (pins 5,
7,9) is determined by the motor type and the bandwidth requirements. The values shown in the diagram are fora 5Q, 5mH motor.
(See L292 Transfer Function Calculation in Application Information).

Finally, two enable inputs are provided on the L292 (pins 12 and
13-active low and high respectively). Thus the output stage may
be inhibited by taking pin 12 high or by taking pin 13 low. The
output will also be inhibited if the supply voltage falls below lSV.

The error signal obtained by the addition of the input and the
current feedback signals (pin 7) is used to pulse width modulate
the oscillator signal by means of the comparator. The pulse width
modulated signal controls the duty cycle ofthe H-bridge to give an
output current corresponding to the L292 input signal.

The enable inputs were implemented in this way because theyare
intended to be driven directly by a microprocessor. Currently
available microprocessors may generate spikes as high as 1.5V
during power-up. These inputs may be used for a variety of applications such as motor inhibit during reset of the logical system
and power-on reset (see Figure 2).

The interval between one side of the bridge switching off and the
other switching on, T, is programmed byCT in conjunction with an
internal resistor RT.
This can be found from:
T = RT . CPIN 10 (CT in the diagram)
Since RT is approximately 1.5 KQ and the recommended T to
avoid simultaneous conduction is 2.5/1S, CPIN 10 should be
around 1.5nF.

"'"'V\I'-{J +V.

The current sense resistors RSI and RSI should be high precision
types (maximum tolerance ±2%) and the recommended value is
given by:

Rmax . 10 max :S O.44V

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

Figure 2.

3-9

PRINTED IN U.S.A

•

L292

APPLICATION INFORMATION

+V.

470pF

5100
Fr
loonr;;.

,..-- - - ---

I

:

9

- - - - - - - - - - - ---

5

:I. RS,

3 ________ _

RS,

14

---,
I
I

1292

I

I
I

CUR.

R2

I

SE~~.+I-----t--.

I

RI
:6
V'O'---"'1~2~k"::0""--1

R3

R2

5kO

7.2kO
12kO

ERROR
AMPL.

,

:
:
:
I

I

I
I
I

L___ :: _____________________

10

11

12

CE2

13

CEI

15kO

Figure 3.

The schematic diagram used for the Laplace analysis of the
system is shown in Figure 4.

v,

RS1

=RS2 =R. (sensing resistors)

I

_1_ = 2.5. 10-3 0 (current sensing amplifier transconductance)
R4

1M

=0

I
I

I

LM = Motor inductance
RM = Motor resistance
1M = Motor current

Gmo=--I
VTH •

:'------'
I

L~I~~E~_____

..!

(DC transfer function from the input of the comparator (VTH) to the motor current (1M».

Figure 4.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 ~ TELEX 95·1064

3·10

PRINTED IN U.S.A

L292

APPLICATION INFORMATION (continued)

s

Neglecting the VCE ••• of the bridge transistor and the VBE of the
diodes:
2Vs

1
Gmo = - RM

where: Vs = supply voltage

1 + ---1M
0.048
2 ~ Wo
(s) = - - ------=--"----,VI
R.
2~s
s'
1+---+ - -

(1)

VA = 8V (reference voltage)

VA

DC Transfer Function

where: Wo =

where:
(pole cancellation)

LM
from which RC = - RM

~

=

1)

~

= 1 from which

2) ~ =

1M
R2R4
1
0.048
A
-(0)=--' - = - - - [-V]
VI
R,R3
R.
R.

1M (I)

1

V2 from which
0.048
= -----(1
R.

Open·Loop Gain and Stability Criterion

1

-

RF
GmoR.
1
--- = --- ----R4 1 + SRFCF
R4C
s (1 + SRFCF)

In order to achieve good stability, the phase margin must be
greater than 45°C when I A.81 = 1.

1

1A.81

2R FCF

)

VI

The previous linear analysis is correct for this example.
Decreasing the ~value, the rise·time ofthe current decreases. But
for a good stability, from relationship (6), the minimum value of ~
is:

<1

1

f=

t
cos ----- e
2RFCF

From Figure 7 it is possible to verify that the L292 works in
"closed· loop" conditions during the entire motor current rise·
time: the voltage lit pin 7 (inverting input of the error amplifier is
locked to the reference voltage VR, present at the non·inverting
input of the same amplifier.

(5)

R.

That means that, at fF = ---'---,1 AIlI must be
27TRFCF
(see Figure 5), that is:

•

(where Vi is the amplitude of the input step).

In DC condition, this is reduced to

sRFC

the damping factor

0.048
-t
1M (t) = ----- [1 - e' 2RFCF (1 + -----)] • VI
R.
4 RFCF

(3)

1M
R2R4
1 +SRFCF
- - (s) = - - - Gmo
2
VI
R.R3
GmoR. + s R4C + S RFCFR4C

A/3 = - - . Gmo

R4C

4 RFCF Gmo R.

By choosing the ~ value, it is possible to determine the system
response to an input step signal. Examples:

(Note that in practice
R must be greater than 5.6KQ)

For RC = LM/RM, the open loop gain is:

is the cutoff frequency

R4C RFCF

-----------IS

(2)

The transfer function is then,

W~

Wo

- m-oR":".r--G

In order to be sure that the current loop is stable the following
condition is imposed:
LM
l+sRC=ls-RM

y
Y

(7)

~min

(6)

1

= 2\12 (phase margin = 45°)

1.2

lA1l1

.,.-

0.9

/

,=

1/../2

~

,=

1

/

~B4--------~~--~

II /

0.6

II
0.3

Figure 5. Open. Loop Frequency Response

o
Closed· Loop System Step Response
a) Small·signals analysis

6

12

15

18

Figure 6. Small Signal Step Response
(Normalized Amplitude vs VR.,cf)

The transfer function (3) can be written as follows:

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

I

.,IV

3·11

PRINTED IN

u.s A

•

L292

APPLICATION INFORMATION (continued)

The cutoff frequency is derived from expression (9) by putting
1M

.

1--1 = 0.707'
Vi

ov

0.048
--(-3dB);
R.

from which:

(10)

Note that RF must be less than 1.5KCl in order to have the maximum current swing at the output of current sensing amplifier.
Working Frequency and Motor Current Ripple
For a value of rotation speed w the e.m.f. Eisequal toKEW, where
KE is the motor speed constant.

OA
V7 = 200mV/div.
1M = lOOmA/dlv.
1= 100",/dlv.
with v, = 1.5 Vp.

Neglecting the motor resistance RM, the VCE.al of the bridge
transistors and the VBE of the diodes, we have:

Figure 7. Motor Current and Pin 7 Voltage Waveforms
(Application of Figure 3). Small Signal Response
b) Large signal response
The large step signal response is limited by slew-rate and inductive load. In this case, during the rise-time ofthe motor current,
the L292 works in open-loop condition, as can be seen from Figure

blM
bt1 = - - - LM
V. - E

(transistors conduction period)

blM
bt2 = - - - LM
V. + E

(diodes conduction period)

(11)

Where blM is the current ripple in the motor (see Figure 9).
The working frequency is:

8.

1

f = - - - = bt1 = bt2
2 RTCT

(12)

where RT is the resistance at pin 11 and CTthecapacitoratpin 10.
RT must be ;:O:8.2Kn due totheoutputcurrentcapabilityatpin 11.

ov

If we consider E = 0 (w = 0; motor stopped) we have:
blM
bt1 = b12 = - - LM

(13)

V.

from this formula we can write

V.

OA

blM =

LM

T

T
(2
= bt1

2"

=b12 = half period)

(13 bis)

The motor current ripple blM must be limited in order to reduce
diSSipation in the motor and the peak output current of the L292.

V7 = lV/dlv
1M = 0 5A/dlv
t = 500ps/dlv

blMma. should be less than 10% of IMma. (see Figure 9).

Figure 8. Motor Current and Pin 7 Voltage Waveforms
(Application of Figure 3). Large Signal Response
The voltage at pin 7 (inverting inputoftheerror amplifier) departs
from the reference voltage VR present at the non-inverting input
and the feedback loop is open.
The feedback loop is on when the motor current reaches its
steady-state value (2A).

Figure 9. Motor Current Waveform

Closed Loop System Bandwidth

From the equation (13 bis) and considering blM = O.IIM max we
have:

A good choice for, is the value 1/-./2. In this case:
1M
0.048
-(s)= - Vi
R.

. 1 + s RFCF
2

2

1 + 2s RFCF + 2S2 RF CF

The module of the transfer function is:
1M

I-y;-I

0.048

=

~ y'[ (1

2)1 +

V.

(8)

0.1 IMma. = - - 2f LMmin

(9)

from which:

CAl RF 2CF2

5 V.

+ 2w RFCF)2 + 1] . [ (1 - 2w RFCd + 1]

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3·12

LMmin = - - f IMma.

(14)

(15)

PRINTED IN U.S A

L292

The switching characteristics of the L292 demand that the working frequency f is less than 30KHz.

Atl

Vsst

A12

Voyer

Atl + At2

Vs

Atl + At2

Vs

'1=1----·------·---

Ifforf = 30KHz, LM is less than LMmin, an external inductor should
be put in series with the motor.

where

'" 2V (2VBE + R.IMI
'" 4V (2VCE sat + 3VBE)
= transistors conduction period.
= diodes conduction period.

From relationship (15) we have:

5 V.

(16)

Lseries = - - - - LM
f IMmax

If Atl

»

4

A problem associated with the system used in the L292 is the
danger of simultaneous conduction in both legs of the output
bridge which, if it were allowed to occur would damage them. To
overcome this the comparator that drives the final stage in effect
consists of two separate comparators (Figure 10): both receive
the same Vt signal but on opposite inputs. The other two inputs are
driven by VTH shifted by plus or minus RTI'. This voltage shift when
compared with Vt results in a delay in switching from one comparator to the other. In this way there will always be a delay between
switching off one leg of the bridge and switching on the other. The
delay T is a function of the integrated resistor RT (l.5K) and an
external capacitor CT connected to pin 10 which also fixes oscillator freq uency.

II

A12 and V. = 20V, we obtain:
(18)

'I = 1- 2()= 80%

Deadtime

(17)

In practice, the efficiency will be slightly lower due to the signal
circuit diSSipation (lW @ 20V) and the finite switching times
(about 1W). If we transfer to the motor a power of 40W the bridge
power dissipation from (18) is lOW and the total diSSipation is
12W. This is an actual efficiency of 77%. Considering a maximum
dissipation equal to 20W for the L292 (Multiwatt package), it is
possible to handle continuous powers greater than 60W.
EXAMPLE
a) Data

- Motor characteristics: LM = 5mH
RM = 50
LM/RM = 1msec
- Voltage and current characteristics:
V. = 20V
1M = 2A
VI = 8.3V
- Closed loop bandwidth: 3kHz.

b) Calculation

- From relationship (4):

It is:
In a typical application, a capacitor of 1.5nF is used to give a
switching delay of 2.25I1S, a more than adequate time when you
consider that the switch-off delay of the integrated transistors is
only 0.5I1s.

0.048
R. = - - - Vi = 0.20
1M

~I'

and from (1):
2V.

Gmo = - - - 1 0

.......--~'a,b

-1

RMVR

./--~Ia,p

RT

VI

-

RC = 1msec [from expression (2)].

-

Assuming, = 1Iy'2; from (7) follows:
1

400 C

f!=2=

.......--~Ic.d
./--~ll,6

4RFCF'0.2

The cutoff frequency is:
143.10-3

IT = - - - - - = 3kHz
RFCF
Figure 10. L292 Deadtime Control

c) Summarizing

Efficiency and Power Dissipation
The expression for the bridge efficiency, independently of the
losses due to the switching times and neglecting the dissipation
due to the motor current ripple, is:

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

RC = 1 . 10-3 sec }
1000 C
----=1
RFCF
-

-

RFCF '" 4711s

C = 47nF
R = 22KO
For RF = 5100 CF= 92nF

3·13

PRINTED IN U S.A.

LINEAR INTEGRATED CIRCUITS

L293
L293E

Push-Pull Four Channel Driver
FEATURES

Di:SCilIPTION

• Output current lA per channel

The L293 and L293E are quad push· pull drivers capable of delivering output currents to
lA per channel. Each channel is controlled by a TIL·compatible logic input and each
pair of drivers (a full bridge) is equipped with an inhibit input which turns off all four
transistors. A separate supply input is provided for the logic so that it may be run off a
lower voltage to reduce dissipation.

• Peak output current 2A per channel
(non repetitive)
• Inhibit facility
• High noise immunity

Additionally the L293E has external connections to the lower emitter of each driver,
permitting the connection of sensing resistor.s, for switchmode control.

• Separate logic supply
• Over·temperature protection

The L293 and L293E are packaged in 16 and 20·pin plastic DIPs respectively; both use the
four center pins to conduct heat to the printed circuit boards.

ABSOLUTE MAXIMUM RATINGS

THERMAL DATA

Collector Supply Voltage, Vc ............................. 36V
Logic Supply Voltage, Vas ................................ 36V
Input Voltage, Vi ......................................... 7V
Inhibit Voltage, Vinh ................ ' ...................... 7V
Peak Output Current (Non·Repetitive), lout ................. 2A
Total Power Dissipation at Tground-pins = 80·C, Ptot ......... 5W
Storage and Junction Temperature, Tstg, TJ ..... -40 to +150·C

Thermal Resistance Junction·Case, 8Jc .......... 14·C/W max
Thermal Resistance Junction·Ambient, 8JA ...... 80·C/W max

CONNECTION DIAGRAM

ORDERING NUMBERS
L2938 (16 leads)
L293E (20 leads)

BLOCK DIAGRAM
DIL·16 (TOP VIEW)

CHIP INHIBIT 1

~ v..

L293

N PACKAGE

INPUT 1

2

15

INPUT 4

OUTPUT 1

3

14

OUTPUT 4

GND

4

13

GND

GND

5

12

GND

OUTPUT 2

6

11

OUTPUT 3

INPUT 2

7

10

v.

8

9

INPUT 3
CHIP INHIBIT 2

Vc

BLOCK DIAGRAM

CONNECTION DIAGRAM

CHIP INHIBIT 1

~ v..

DIL·20 (TOP VIEW)
N PACKAGE

INPUT 1

2

19

INPUT4

OUTPUT!

3

18

OUTPUT 4

SENSE 1

4

17

SENSE4

GND

5

16~ GND

GND

6

15 ~GND

SENSE2

7

14

SENSE 3

OUTPUT2 [ 8

13

OUTPUT 3

INPUT2 [ 9

12

INPUT3

11

CHIP INHIBIT 2

v.

10

~co-~~

12/83

3·14

__~__________________________~

lkQ

UNITRDDE

L293
L293E

MECHANICAL DATA
L293

L293E

8w
ELECTRICAL CHARACTERISTICS (For each channel V. = 24V, V•• = 5V T amb = 25°C unless otherwise specified)
PARAMETER

SYMBOL

Collector Supply Voltage

Ve

Logic Supply Voltage

Vas

Collector Supply Current

Ie

TEST CONDITIONS

MIN.

TYP.

4.5

I••

Input Low Voltage

ViL

Input High Voltage

ViH

Vi = H, 10 = 0, Vinh. =H

16

24

44

60

Vi = H, 10 = 0, Vinh. =H

16

22

Vinh. = L

16

24

-0.3

1.5

V

2.3

Vsa

V

> 7V

2.3

7
-10

p,A

100

p,A

-0.3

1.5

V

V•• :5 7V

2.3

Vsa

V.B > 7V

2.3

7

Vi = L

i;H

Vi = H

Inhibit Low Voltage

Vinh.L

i;nh.L
I;nh.H

mA

Vas :57V

ilL

Low Voltage Inhibit Current

mA

4

Vi = L, 10 = 0, Vinh. = H

Low Voltage I nput Current

High Voltage Inhibit Current

V

6

High Voltage Input Current

Vinh.H

V

36
2

V••

Inhibit High Voltage

UNITS

36
VI = L, '0 = 0, Vinh. = H

Vinh. = L

Total Quiescent Logic Supply Current

MAX.

30

-30

V

-100

p,A

10

p,A

Source Output Saturation Voltage

VCEsalH

10 = -lA

1.4

1.8

V

Sink Output Saturation Voltage

VCEBalL

'0 = 1A

1.2

1.8

V

Sensing Voltage (Pins 4, 7, 14, 17)**

VSENS

Rise Time

t,

2
0.1 to 0.9 Vo'

V

250

ns

Fall Time

tf

0.9 to 0.1 Vo'

250

ns

Turn-On Delay

tON

0.5 Vi to 0.5 Vo

*

450

ns

Turn-Off Delay

toFF

0.5 Vi to 0.5 Vo •

200

ns

·See Figure l.
··Referred to L293E.

UNiTRODE CORPORATION. 5 FORBES ROAD
LEXiNGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-15

PRINTED IN U.S A.

•

L293
L293E

TRUTH TABLE

Figure 1. Switching Times

VI (each channel)

Vo

Vinh.**

H
L
H
L

H
L

H
H
L
L

X·
X·

·High output impedance.
··Relative to the considered channel.

Figure 2. Saturation Voltage vs Output Current

Figure 3. Source Saturation vs Ambient Temperature

Vc = 24V

Vc = 24V

v, = V'nhlbit :;. Vss = 5V

V'nhiblt = Vss = 5V

V V
VeE.at H/

-;::::. P
o

V

~

la = j5A

I--

t::::: ~ElJ8tL

la=

I~

la = 015A

I

la=O.IA

o
-50

1.5

0.5
la

50

-(A)

100

lamb - ("C)

Figure 4. Sink Saturation Voltage vs
Ambient Temperature

Figure 5. Quiescent Logic Supply Current vs
Logic Supply Voltage

Vc =J4V
r--- v,Vlnh==LOW
HIGH

Vc = 24V
Vlnhiblt = Vss = 5V

50

--

I

-

~

48

I

46

1
la=yA

1l
44

10'

V

.........

",

,-:>; .

,

Q~::~I~-_-,_-~~i
~i_'~'i~i~'_JlLf~i ~tlLL'~tJ~____~,
Qi:F:-+t_-_'- li~:--------______________'-___.

f. = 25KHz
~- -,""

y",iJ\c9-:>", -:>",

~,-------+!+-~:-----

,

'\

~-\ .. .;~

II

'\.

\

0\

100

10

R(KCl)

R - (KCl)
t

Fllure 4. Switchinl frequency vs values of Rand C

PRINTED IN U.S.A.

LINEAR INTEGRATED CIRCUITS

UCl17
UC217
UC317

1.5A, Three Terminal Adjustable
Positive Voltage Regulators

FEATURES

DESCRIPTION

•
•
•
•
•
•

This monolithic integrated circuit is an adjustable 3-terminal positive voltage regulator
designed to supply more than 1.5A of load current with an output voltage adjustable
over a 1.2 to 37V range. Although ease of setting the output voltage to any desired value
with only two external resistors is a major feature of this circuit, exceptional line and
load regulation are also offered. In addition, full overload protection consisting of
current limiting, thermal shutdown and safe-area control are included in this device
which is packaged in TO-3 and TO-220 packages. The UC117 is rated for operation
from -55°C to +150°C, the UC217 from -25°C to +150°C and the UC317 from
O°C to + 125°C.

Output voltage adjustable from 1.2 to 37V
Guaranteed 1.5A output current
Line regulation typically 0.01 %/V
Load regulation typically 0.1%
Temperature-independent current limit
Standard 3-lead transistor packages
(TO-3, TO-220)

ABSOLUTE MAXIMUM RATINGS
Power Dissipation ................................. _...... _......... Internally limited
Input-Output Voltage Differential ................................................ 40V
Operating Junction Temperature Range
UC117 ......................................................... -55°C to +150°C
UC217 ......................................................... -25°C to +150°C
UC317 ............................................................ O°C to +125°C
Storage Temperature ............................................... -65°C to + 150°C
Lead Temperature (Soldering, 10 seconds) ..................... _............... 300°C

TYPICAL APPLICATIONS
1.2V-25V Adjustable Regulator

Digllally Selected 0utpuIs

UC117

UC117

V,.----i

I---"~VOUT

R,
240

"'Needed if device is far from
filter capacitors
tOptional-improves transient

response

tt VOUT = 1.25V (1

+

=~)

UC117

v,.
7V - 35V

-..-INPUTS

·Value determines maximum VOUT

·Min output"'" 1.2V

[1JJ
1182

3-25

_UNITRDDE

•

UCl17 UC217 UC317

ELECTRICAL CHARACTERISTICS (Note 1)
PARAMETER

UC317

UC117!UC217

TEST CONDITIONS

MIN.

TYP.

MAX.

0.01

MIN.

UNITS

TYP.

MAX.

0.02

0.01

0.04

%/V

Line Regulation

TA = 25°C. 3V::; (V IN - VOUT)::; 40V.
(Note 2)

Load Regulation

TA = 25°C. lOmA ::; lOUT::; IMAx
VOUT ::;15V. (Note 2)
VOUT 2:: 5V. (Note 2)

5
0.1

15
0.3

5
0.1

25
0.5

mV
%

TA = 25°C. 20ms Pulse

0.03

0.07

0.04

0.07

%/W

50

100

50

100

pA

0.2

5

0.2

5

pA

1.25

1.30

1.25

1.30

V

Thermal Regulation
Adjustment Pin Current
Adjustment Pin Current
Change

lOmA ::; IL ::; IMAx
2.5V ::; (V,N - VOUT) ::; 40V

Reference Voltage

3::; (V,N - VOUT) ::; 40V
lOmA ::; lOUT::; IMAX• P ::; PMAX

Line Regulation

3::; (V ,N - VOUT) ::; 40V. (Note 2)

0.02

0.05

0.02

0.07

%/V

Load Regulation

lOmA ::; lOUT::; IMAX• (Note 2)
VOUT ::; 5V
VOUT 2:: 5V

20
0.3

50
1

20
0.3

70
1.5

mV
%

5

3.5

10

mA

1.20

Temperature Stability

TMIN::; TJ ::; TMAX

1

Minimum Load Current

V,N - VOUT = 40V

3.5

Current Limit

(V IN - VOUT) ::;15V
K Package
T Package
(V,~ - VOUT) = 40V
K Package
T Package

1.5
1.5

1.20

1

2.2
2.2

%

2.2
2.2

A
A

0.4
0.4

0.4
0.4

A
A

0.003

0.003

%

65
80

65
80

dB
dB

1.5
1.5

RMS Output Noise

TA = 25°C. 10Hz::; f ::; 10kHz

Ripple Rejection Ratio

VOUT = lOV. t' = 120Hz
CAOJ = lOpF

Long Term Stability

TA = 125°C. 1000 Hrs.

0.3

1

0.3

1

%

Thermal Resistance. Junction
to Case

K Package
T Package

2.3

3

2.3
4

3

°C/W
°C/W

66

66

Notes: 1. Unless otherwise noted. the above specifications apply over the following conditions:

UCl17: -55°C"; T,"; 150°C
UC217: -25°C"; T, ,,; 150'C
UC317: O'G,,; T,"; 125°G
(V'N - VOUT) = 5V. 10 = O.5A. IMAX =1.5A
2. All regulation specifications are measured at constant junction temperatures using low duty·cycle pulse testing.

TYPICAL PERFORMANCE CHARACTERISTICS
Dropout Voltage

Current Umit

3.0 rA:7V:-OU~T-=:-:IO::!O-m:7
V -.-r--r-..---r-,..-.,

=

g

~

>-

15

'"'"::J

r-~

U

>-

::J

,

~

::J

o

, TJ

1

o

o

2.5

f\

=150'C.J

~

'"~

TJ = -55'C

/

"
TJ =

I,

1.5 f--l--+-+-~~:+-~~I--+--""I

-...:::: r--...

25'C~

V

I

10

f---.l::--+--II--+-+--+-+-I--,i

20

30

1.0L........L_...L._L.....l.._.l..........L_...L.--'_..J

-75

40

INPUT·OUTPUT DIFFERENTIAL (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326'6509'. TELEX 95-1064

-50

-25

25

50

75

100

125

150

JUNCTION TEMPERATURE ('C)

3·26

PRINTED IN U.S,A.

UC117 UC217 UC317

TYPICAL PERFORMANCE CHARACTERISTICS

Minimum Operating Current

Temperature Stability

4.0

1.250

~

,/'

"'

(!)

V

..........

~

~

0

>
u

1.240

"'z

"'el
t:J
'"

•

4.5

1.260

.s<
"'

'"
"'"

2.0

z

\

1.230

2.5

U
I-

"'

V"

u

lfl

15

:;

~ -wb----"

/

/

~//. ~

3.0

IZ

~

T,

3.5

~

CY

1.0

V

~ ~7
TJ= I50 a C

~
~ "'- TJ = 25'C

0.5
1.220
-75

-50

-25

0

25

50

75

100

125

o
o

150

JUNCTION TEMPERATURE ('C)

10

20

30

40

INPUT·DUTPUT DIFFERENTIAL (V)

MECHANICAL SPECIFICATIONS AND CONNECTION DIAGRAMS
UC1l7 UC217 UC317

~EfbE

F-wrM
~I ~*'eI"

Adjustment

Input

H
I

J-

'1?

L

Output

K

C D

e
e
0
E
F

G
H

J
K
L
M

Bottom View

INCHES
.875 MAX.
• 135 MAX.
.250-.450
.312 MIN.
.038-.043DIA.
•188 MAX. RAD.
1.177-1.197
.655-.675
.205-.225
.420-.440
•525 MAX. RAD.
.151-.161DIA.

MILLIMETERS
22.23 MAX .
3.43 MAX •
6.35-11.43
7.92 MIN.
0.97-1.09 DIA .
4.78 MAX. RAD .
29.90-30.40
16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAD •
3.84-4.09 DIA .

UC317

SEATING
Pl.ANE

~rfi

t-r

hI
A

A

~ f-R
~

I---J

rS-I--.l
~-i
I 3 2

~

.-l.

T

od~'E~

INCHES
MAX
MIN
0.560
0625
B
C

0
I-Adjustment
2-lnput
3-0utput
4-0utput

G

0.380

0.420

0.140
0.020
0.139
0.090

0.190
0.045
0147
0.110
0250
0.025
0.562

0.015
0500
0.045
N

Q

0.190
0.100

0.080
0.045
0.230

0070
0.210

0.120
0115
0055
0270

TO·204AA K(TO·3)

T(TO·220)

MILIMETERS
MIN
MAX
14.23
15.87
966
1066
3.56
4.82
0.51
3.531
2.29

0.38
1270
114
4.83

2.54
2.04
114
5.85

1.14

3.733
279
635
0.64
1427
1.77
533
304
2.92
1.39

685

Note: When ordenng, add suffiX "K" (for TO-3 package) or "T" (for TO-220 package) to the Part Number.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3·27

PRINTED IN U.S.A.

UC117 UC217 UC317

APPLICATION HINTS
In operation, the UC117 develops a nominal 1.25V reference
voltage, VREF, between th.e output and adjustment terminal. The
reference voltage is'impressed across program resistor R, and,
since the voltage is constant, a constant current I, then flows
through the output set resistor R., giving an output voltage of

UC1l7

Load Regulation
The UC117 is capable of providing extremely good load regulation
but a few precautions are needed to obtain maximum
performance. The current set resistor connected between the
adjustment terminal and the. outputtermi(lal (usually 2400)
should be tied directly to the output of the regulator rather than
near the load. This eliminates line drops from appearing
effectively in series with the reference and degrading regulation.
With the TO·3 package, it is easy to minimize the reSistance from
the case to the set resistor by using 2 separate leads to the case.
The ground of R2 can be returned near the ground of the load to
provide remote ground sensing and improve load regulation.

Protection Diodes
When external capacitors are used with any IC regulator it is
sometimes necessary to add protection diodes to prevent the
capacitors from discharging through low current points into the
regulator. Most 10/lF capacitors have low enough internal series
resistance to deliver 20A spikes when shorted. Although the surge
is short there is enough energy to damage parts of the IC.
Figure 1
Since the 100/lAcurrentfrom the adjustmentterminal represents
an error term, the UC1l7 was designed to minimize IADJand make
it very constant with line and load changes. To do this, all
quiescent operating current is returned to the outputestablishing
a minimum load current requirement. If there is insufficient load
on the output, the output will rise,

External Capacitors
An input bypass capacitor is recommended. A O.l/lF disc or l/lF
solid tantalum on the input is suitable input bypassing for almost
all applications. The device is more sensitive to the absence of
input bypassing when adjustment or output capacitors are used
but the above values will eliminate the possibility of problems.
The adjustment terminal can be bypassed to ground on the
UC117 to improve ripple rejection. This bypass capacitor
prevents ripple from being amplified as the output voltage is
increased. With a 10/lF bypass capacitor 80 dB ripple rejection is
obtainable at any output level.
In general, the best type of capacitors to use are solid tantalum.
Solid tantalum capacitors have low impedance even at high
frequencies. Depending upon capacitor construction, it takes
about 25/lF in aluminum electrolytic to equall/lF solid tantalum
at high frequencies.

When an output capacitor is connected to a regulator and the
input is shorted, the output capacitor will discharge into the
output of the regulator. The discharge current depends on the
value of the capacitor, the output voltage of the regulator, and the
rate of decrease of Y,N. In the UC1l7, this discharge path is
through a large junction that is able to sustain 15A surge with no
problem. This is not true of other types of positive regulators. For
output capacitors of 25/lF or less, there is no need to use diodes.
The bypass capacitor on the adjustment terminal can discharge
through a low current junction. Discharge occurs when either the
input or output is shorted. Internal to the UC1l7 is a 500 resistor
which limits the peak discharge current. No protection is needed
for output voltages of 25V or less and 10/lF capacitance. Figure 2
shows a UC117 with protection diodes included for use with
outputs greater than 25V and high values of output capacitance.
D,

1N4002

v,.

R,

Although the UCl17 is stable with no output capacitors, like any
feedback circuit, certain values of external capacitance can
cause excessive ringing. This occurs with values between 500pF
and 5000pF. A l/lF solid tantalum (or 25/lF aluminum
electrolytic) on the output swamps this effect and insures
stability.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

""-+--~-VOUT

VOUT

=

1.25V

(l+~)

+ R21ADJ

D, protects against C,

D2 protects against C2

Figure 2. Regulator with Protection Diodes

3·28

PRINTED IN ·U.S.A.

UC137
UC237
UC337

LINEAR INTEGRATED CIRCUITS
1.5A, Three Terminal Adjustable
Negative Voltage Regulators
FEATURES

DESCRIPTION

• Output voltage adjustable from -1.2 to
-37V
• Guaranteed 1.5A output current
• Line regulation typically 0.01 %/V
• Load regulation typically 0.3%
• Excellent thermal regulation, 0.002%/W
• 77 dB ripple rejection
• Excellent rejection of thermal transients
• 50 ppmfOC temperature coefficient
• Temperature-independent current limit
• Internal thermal overload protection
• Standard 3-lead transistor packages
(TO-3, TO-220)

The UC137 /UC237 /UC337 are adjustable 3-terminal negative voltage regulators
capable of supplying in excess of -1.5A over an output voltage range of -1.2V to -37V.
These regulators are exceptionally easy to apply, requiring only 2 external resistors to
set the output voltage and 1 output capacitor for frequency compensation. The circuit
design has been optimized for excellent regulation and low thermal transients. Further,
the UC137 series features internal current limiting, thermal shutdown and safe-area
compensation, making them virtually blowout-proof against overloads.
The UC137 /UC237 /UC337 serve a wide variety of applications including local on-card
regulation, programmable-output voltage regulation or precision current regulation. The
UC137 /UC237 /UC337 are ideal complements to the UC117 /UC217 /UC317 adjustable
positive regulators. These devices are available in TO-3 and TO-220 packages. The UC137 is
rated for operation from -55°C to + 150°C, the UC237 from -25°C to + 150°C and the UC337
from O°C to + 125°C.

ABSOLUTE MAXIMUM RATINGS
Power Dissipation _. _. _.. _........... _.. _........... _. _. _. _. _....... Internally limited
Input-Output Voltage Differential. _....... _. _........................ _.... _. _... _40V
Operating Junction Temperature Range
UC137 ...... _. _. _.... _. _............ _............. _... _........ -55°C to +150°C
UC237 _... _. _... _.... _. _...... _........... _. _............. _. _.. -25°C to +150°C
UC337 _......... _. _.... _...... _. _. _... _..... __ .................... O°C to +125°C
Storage Temperature _. _. __ . __ ...................................... -65°C to + 150°C
Lead Temperature (Soldering, 10 seconds) ..................................... 300°C

TYPICAL APPLICATION
Adjustable Negative Voltage Rqulator

V
.,.-; R,
=~c"

-.!...c,t
--I"F

IADJ
-VIN

J-

v..l

I

UC1371
UC337

120n

Ivo",

I

-VOUTtt

·C, = IpF solid tantalum is required only if regulator is far from power-supply filter capacitor.
tOptional-improves transient response

tt

1182

-VOUT

= -1.25V (1 +

l:a~)

3-29

~UNITRDDE

•

UC137 UC237 UC337
ELECTRICAL CHARACTERISTICS (Note 1)
UC1371UC237
TEST CONDITIONS

PARAMETER
Line Regulation

T. = 25'C, 3V:o; IV'N - Vourl :0; 40V
(Note 2)

Load Regulation

T. = 25'C, lOmA :0; 10ur:O; IM• x
IVourl S5V, (Note 2)
IVour I 2: 5V, (Note 2)

Thermal Regulation

MIN,

T. = 25'C, lOms Pulse.

Adjustment Pin Current
Adjustment Pin Current
Change

10mA :0; IL :0; IMAX
2.5V ::;IV,N - Vourl :0; 40V, T. = 25'C

Reference Voltage

T. = 25'C
3:0; IV'N - Vourl :0; 40V
lOmA::; 10ur:O; IMAX' P :0; PMAX

UC337

TYP.

MAX.

0.01

MIN.

UNITS

TYP.

MAX.

0.02

0.01

0.04

%/V

15
0.3

25
0.5

15
0.3

50
1.0

mV
%

0.002

0.02

0.003

0.04

%/W

65

100

65

100

pA

2

5

2

5

pA

-1.225 -1.250 -1.275 -1.213 -1.250 -1.287
-1.200 -1.250 -1.300 -1.200 -1.250 -1.300

V
V

Line Regulation

3V :0; IV'N -

0.02

0.05

0.02

0.07

%/V

Load Regulation

lOmA :0; lour :0; IM• x, (Note 2)
IVour I :0; 5V
IVourl 2: 5V

20
0.3

50
1

20
0.3

70
1.5

mV
%

Temperature Stability

T M'N :0; T; :0; T MAX

0.6

Minimum Load Current

IV'N - Vourl :0; 40V
IV'N - Vourl :0; lOV

2.5
1.2

10
6

mA
mA

Current Limit

IV'N - Vourl :::; 15V
K Package
T Package
IV'N - Vourl = 40V
K Package
T Package

Vourl :0; 40V, (Note 2)

1.5
1.5

RMS Output Noise

T. = 25'C, 10Hz :0; f:O; 10kHz

Ri pple Rejection Ratio

Vour = -lOV, f = 120Hz
C'DJ = lOpF

Long Term Stability

T. = 125'C, 1000 Hours

66

K Package

Thermal Resistance, Junction
to Case

0.6
2.5
1.5

5
3

2.2
2.2

1.5
1.5

%

2.2
2.2

A
A

0.4
0.4

0.4
0.4

A
A

0.003

0.003

%

60

60

dB
dB

77

66

77

0.3

1

0.3

1

%

2.3

3

2.3
4

3

'C/W
'C/W

TPackage

Notes: 1. Unless otherwise noted, the above specifications apply over the following conditions:

UC137: -55'C "T, " 15D'C
UC237: -25'C " T, " 15D'C
UC337: D'C "T," 125'C
IV'N - VouTI =5V, 10 =D.5A, IMAX =1.5A
2. All regulation specifications are measured at constant junction temperatures using low duty-cycle pulse testing.

Current Limit

Dropout Voltage
13.51

r---r-.----r---.--r--r-.---,--..,
VOUT = -5V

AV OUT = lOOmV

f::~
1----___

g

2

~
;;!

~

l-

g 12.511--+-+--=....cl-+--:-I-:--::::-+-+----i

r\,

ii]
0:
0:
::0
()

~

r-

::0

"r-

::0

o

Tj - 150°C

o

o

1101

~

Tj =-55 c C

15
I-

"

::0

~.

1',

"r-

e 1151
::>

'-

''''~
T; /25'C ~ ~ ;;;
1201

1301

ii'
~

10.51 L...--'-_-'---'-_--'-_'---'--_-'---'-_-'
-75 -50 -25
25
50
75 100 125 150

1401

INPUT -OUTPUT DIFFERENTIAL (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509'. TELEX 95-1064

JUNCTION TEMPERATURE (0G)

3-30

PRINTED IN U.S.A.

UC137 UC237 UC337

TYPICAL PERFORMANCE CHARACTERISTICS

Temperature Stability

Minimum Operating Current
18

11.2701

1.6

-55't/f'

T};
1.4

_ 112601

i::-

<
g

~
~
o

~

w

t-

'"'"

1.0

t-

0.8

~

::>

;::; 11.2501
u

u

............

~

~

~

'"

12

~

u

Iil
'3
a

11.2401

0.6
0.4
0.2

11.2301
-75

-50

-25

25

50

75

100

125

If- .-

TJ; 150'C

o~
o

150

JUNCTION TEMPERATURE ('C)

A
.~

1101

;r

r/

£""

/

Tj=25°C

V

1201

1301

1401

INPUT·OUTPUT DIFFERENTIAL (V)

MECHANICAL SPECIFICATIONS ANO CONNECTION DIAGRAMS
UC137 UC237 UC337

~WE

F

wr~ustment

~kl~l~'"
I
I

I

G

;----:.::

H

I

J-

~

L
Input

7

C D

A

B
C
D

E
F

G
H
J
K
L
M

Bottom View

INCHES
.875 MAX.
• 135 MAX.
.250-.450
.312 MIN.
.038-.043 DIA.
•188 MAX. RAD.
1.177-1.197
.655-.675
.205-.225

MILLIMETERS
22.23 MAX .
3.43 MAX •
6.35-11.43
7.92 MIN •
0.97-1.09 DIA.
4.78 MAX. RAD .
29.90-30.40

.420-.440
.525 MAX. RAD.
.151-.161 DIA.

16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAD.
3.84-4.09 OIA.

UC337

SEATING
PLANE

i

~[~
IJLl

re-i

F-~'
1 3 2

0

I.:

--l ......
_

.... J

I

~-a
--1

h

"

oj~'t:

A
B

c
l-Adjustment
2-0utput
3-lnput
4-lnput

0
F
G
H
J
K
L
N

Q
R
S
T

TO-204AA K(TO-3)

INCHES
MIN
MAX
0625
0560
0.420
0380
0140
0.190
0.020
0.045
0.147
0139
0090
0110
0.250
0.015
0025
0.500
0.562
0045
0070
0190
0.210
0.120
0100
0080
0115
0.045
0055
0.230
0270

T(TO-220)

MILIMETERS
MAX
MIN
14.23
1587
966
1066
356
482
114
0.51
3531
3733
2.79
229
635
064
038
1427
1270
1.14
177
533
483
254
304
292
204
114
139
585
685

Note: When ordering, add suffix "K" (tor TO-3 package) or "T" (for TO·220 package) to the Part Number.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON,.MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-31

PRINTED IN U.S.A.

II

LINEAR INTEGRATED CIRCUITS

UC150
UC250
UC350

3A, Three Terminal Adjustable
Positive Voltage Regulators
FEATURES

DESCRIPTION

• Output voltage adjl,lstable from 1.2V to
33V
• Guaranteed 3A output current
• Line regulation typically 0.005%1V
• Load regulation typically 0.1 %
• Guaranteed thermal regulation
• Current limit constant with
temperature
• Standard 3-lead transistor package

The UC150/UC250/UC350 are adjustable 3-terminal positive voltage regulators
capable of supplying in excess of 3A over a 1.2V to 33V output range. They require only
2 external resistors to set the output voltage. Further, both line and loaa regulation are
comparable to discrete designs.
In addition to higher performance than fixed regulators, the UC150 series offers full
overload protection. Included on the chip are current limit, thermal overload protection
and safe area protection. All overload protection circuitry remains fully functional even
if the adjustment terminal is accidentally disconnected.
Since the regulator is "floating" and sees only the input·to-output differential voltage,
supplies of several hundred volts can be regulated as long as the maximum input to
output differential is not exceeded.
Supplies requiring electronic shutdown can be achieved by clamping the adjustment
terminal to ground which programs the output to 1.2V where most loads draw little
current.
The UC150/UC250/UC350 are packaged in standard TO·3 transistor packages. The
UC150 is rated for operation from -55·C to +150·C, the UC250 from -25·C to +150·C
and the UC350 from O·C to + 125·C.

ABSOLUTE MAXIMUM RATINGS
Power Dissipation .................................................. Internally limited
Input-Output Voltage Differential ................................................ 35V
Operating Junction Temperature Range
UC150 ......................................................... -55·C to + 150·C
UC250 ......................................................... -25·C to +150·C
UC350 .........................................................•.. O·C to + 125·C
Storage Temperature ............................................... -65·C to +150·C
Lead Temperature (Soldering, 10 seconds) ..................................... 300·C

TYPICAL APPLICATIONS
l.2V-25V AdjuoIablo Reculator
UCI50

VI,.,

~

SA Reculator

R,
0.1

28V

Slow Turn-On

15V Regulator

UC150

UC150

v,.

r-.----....... V15V.
.'"
lN4002

R,

0.1

*Needed if regulator is far from power
supply filter capacitor
tOptional-improves transient
response

tt V"",= 1.25V (I +

=

OUTPUT

~)

Note: Usually R, 2400 for
UCI50 and UC250 and R,

1/82

V,.~i-.JV>o'l.-"""--+---I

= 1200 for UC350

~UNITRDDE

UC150 UC250 UC350

ELECTRICAL CHARACTERISTICS (Note 1)
PARAMETER

TEST CONDITIONS

=

Line Regulation

TA 25°C, 3V :5 (V IN - VOUT) :5 35V,
(Note 2)

Load Regulation

T A 25°C, 10mA :5 louT :5 3A
VOUT :55V, (Note 2)
VOUT 2: 5V, (Note 2)

Thermal Regulation

TYP.

MAX.

0.005

UNITS

TYP.

MAX.

0.01

0.005

0.03

%/V

5
0.1

15
0.3

5
0.1

25
0.1

mV
%

0.002

0.01

0.002

0.03

%/W

50

100

50

100

pA

0.2

5

0.2

5

pA

1.25

1.30

1.25

1.30

V

0.02

0.05

0.02

0.07

%/V

20
0.3

50
1

20
0.3

70
1.5

mV
%

5

3.5

10

mA

MIN.

=

Pulse

=20ms

Adjustment Pin Current
Adjustment Pin Current
Change

lOmA :5 IL :5 3A
3V :5 (V ,N - VOUT) :5 35V

Reference Voltage

3:5 (V ,N - VOUT) :5 35V,
lOmA :5 lOUT :5 3A, P:5 30W

1.20

Line Regulation

3:5 (V ,N

Load Regulation

VOUT :5 5V 10mA :5 10UT:5 3A, (Note 2)
VOUT 2: 5V

Temperature Stability

T MIN :5 T j :5 T MAX

Minimum Load Current

(V'N - VOUT)

Current Limit

(V,N - VOUT) :5lOV
(V'N - VOUT) 30V

RMS Output Noise

TA

Ri pple Rejection Ratio

VOUT
CADJ

Long Term Stability

UC350

UC150/UC250
MIN.

- VOUT) :5 35V, (Note 2)

1.20

1

1

= 35V

3.5
3.0

=

=25°C, lOHz:5 f :5 10kHz
= lOV, f = 120Hz
= 10pF
TA = 125°C, 1000 Hrs.

66

Thermal Resistance, Junction
to Case

4.5
1

3.0

%

A
A

4.5
1

0.003

0.003

%

65
86

65
86

dB
dB

0.3

66
1
1.5

0.3

1

%

1.5

°C/W

Notes: 1. Unless otherwise noted, the above specifications apply over the following conditions:
UC150: -55°C"; T, ,,; 150°C
UC250: -25°C"; T, ,,; 150°C
UC350: O°C ,,; T, ,,; 125°C
(V ,N - VOUT) = 5V, lOUT = 1.5A
2. All regulation specifications are measured at constant junction temperatures using low duty·cycle pulse testing.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

3·33

PRINTED IN U.S.A.

II

UC150 UC250 UC350
TYPICAL PERFORMANCE CHARACTERISTICS

Current Umit

Dropout Voltage
VOUT = lOOmV

T, =125 ,C
'-.:J!

5

...z

~~ r-- T, =
;
; T,=t,~

~J -...,

4

UJ

0:
0:

::J

...

i

~

::J

o

~

;
o

'" '"

o

10

15

r-..

r-

k= 3A

20

1,= 200mA

~~

25

30

0.5
-75

35

-25

INPUT -OUTPUT DIFFERENTIAL (V)

V

ILI= 2A

r- 1"--4.

F:::: t::: t"-- t--.. t--. 1,1=

"

I

U

l"- t-

-55'C

500mA

E;: ~
~~I"
25

75

125

JUNCTION TEMPERATURE ('C)

Ripple Rejection
100r-----r-----r-----r-----r----,

40

IL = 500mA
VIN = 15V
Vour = lOV

20

TI = 25"C

0
10

100

lk

10k

lOOk

1M

FREQUENCY (Hz)

MECHANICAL SPECIFICATIONS AND CONNECTION DIAGRAM
UC150 UC250 UC350

~BbE
C

0

TO·204AA K(TO·3)

F~M

I
G

l

7EiJ-L

~-

"7,-

I
G>

H

I

J

-~
K

Bottom View

,~.

L

Output

A
B

C
D
E
F
G

H
J
K
L

M

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

INCHU

MilliMETERS

.875 MAX.
. 135 MAX.
.250-.450
.312 MIN.
.038-.043 DIA.
.188 MAX. RAD.
1.177 -1.197
.655-.675
.205-.225
.420-.440
.525 MAX. RAD.
. 151-.161 DIA.

22.23 MAX .
3.43 MAX .
6.35-11.43
7.92 MIN .
0.97-1.09 DIA .
4.78 MAX. RAD.
29.90- 30.40
16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAD.
3.84-4.09 DlA .

3·34

PRINTED IN U.S.A.

UC150 UC250 UC350

APPLICATION HINTS
In operation, the UC150 develops a nominal 1.25V reference
voltage, VREF, between the output and adjustment terminal. The
reference voltage is impressed across program resistor R, and,
since the voltage is constant, a constant current I, then flows
through the output set resistor R., giving an output voltage of

Load Regulation
The UC150 is capable of providing extremely good load regulation
but a few precautions are needed to obtain maximum
performance. The current set resistor connected between the
adjustment terminal and the output terminal (usually 2400)
should be tied directly to the output of the regulator rather than
near the load. This eliminates line drops from appearing
effectively in series with the reference and degrading regulation.
With the TO-3 package, it is easy to minimize the resistance from
the case to the set resistor by using 2 separate leads to the case.
The ground of R. can be returned near the ground of the load to
provide remote ground sensing and improve load regulation.

UC150

Protection Diodes
When external capacitors are used with any IC regulator it is
sometimes necessary to add protection diodes to prevent the
capacitors from discharging through low current points into the
regulator. Most lOpF capacitors have low enough internal series
resistance to deliver 20A spikes when shorted. Although the surge
is short there is enough energy to damage parts of the IC.
When an output capacitor is connected to a regulator and the
input is shorted, the output capacitor will discharge into the
output of the regulator. The discharged current depends on the
value of the capacitor, the output voltage of the regulator, and the
rate of decrease of V,N. In the UC150, this discharge path is
through a large junction that is able to sustain 25A surge with no
problem. This is not true of other types of positive regulators. For
output capacitors of 25pF or less, there is no need to use diodes.

Figure 1
Since the 50llA current from the adjustment terminal represents
an error term, the UC150 was designed to minimize IADJand make
it very constant with line and load changes. To do this, all
quiescent operating current is returned to the outputestablishing
a minimum load current requirement. If there is insufficient load
on the output, the output will rise.

The bypass capacitor on the adjustment terminal can discharge
through a low current junction. Discharge occurs when either the
input or output is shorted. Internal to the UC150 is a 500 resistor
which limits the peak discharge current. No protection is needed
for output voltages of 25V or less and 10ilF capacitance. Figure 2
shows a UC150 with protection diodes included for use with
outputs greater than 25V and high values of output capacitance.

External Capacitors
An input bypass capacitor is recommended. A O.lIlF disc or IIlF
solid tantalum on the input is suitable input bypassing for almost
all applications. The device is more sensitive to the absence of
input bypassing when adjustment or output capacitors are used
but the above values will eliminate the possibility of problems.
The adjustment terminal can be bypassed to ground on the
UC150 to improve ripple rejection. This bypass capacitor
prevents ripple from being amplified as the output voltage is
increased. With a lOpF bypass capacitor 86 dB ripple rejection is
obtainable at any output level.

D,
IN4DD2

v,.

In general, the best type of capacitors to use are solid tantalum.
Solid tantalum capacitors have low impedance even at high
frequencies. Depending upon capacitor construction, it takes
about 25pF in aluminum electrolytic to equal IpF solid tantalum
at high frequencies.
01 protects against C1

Although the UC150 is stable with no output capacitors, like any
feedback circuit, certain values of external capacitance can
cause excessive ringing. This occurs with values between 500pF
and 5000pF. A IpF solid tantalum (or 251lF aluminum
electrolytic) on the output swamps this effect and insures
stability.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

D2 protects against C2

VOUT

= 1.25V (

1+

~~)

+ R.I ADJ

Figure 2. Regulator with Protection Diodes

3-35

PRINTED IN U.S.A.

11

LINEAR INTEGRATED CIRCUITS
Advanced Regulating Pulse Width Modulators

UC493A
UC494A
UC495A
UC495B

UC493AC
UC494AC
UC495AC
UC495BC

FEATURES

DESCRIPTION

• DL!al uncommitted 40V, 200mA output
transistors

This entire series of PWM modulators each provide a complete pulse width modulation
system in a single monolithic integrated circuit. These devices include a 5V reference
accurate to ±1 %, two independent amplifiers usable for both voltage and current
sensing, an externally synchronizable oscillator with its linear ramp generator, and two
uncommitted transistor output switches. These two outputs may be operated either in
parallel for single'ended operation or alternating for push· pull applications with an
externally controlled dead· band. These units are internally protected agai'nst double·
pulsing cif' a single output or from extraneous output signals when the input supply
vOltage is below minimum.
The UC495A and UC495B also contain an on·chip 39V zener diode for high·voltage
applications where Vee would be greater than 4OV, and a buffered output ~teering
control that overrides the internal control of the pulse steering flip·flop.
UC493A and UC494A are packaged in a 16'pin DIP, while the UC495A and UC495B are
packaged in an 18·pin DIP. The UC493A, UC494A, UC495A and UC495S are specified
for operation over the full military temperature range of -55·C to + 125·C, while the
UC493AC, UC494AC, UC495AC and UC495BC are designed for industrial applications
from O·C to +70·C.

•
•
•
•
•
•
•
•

1% accurate 5V reference
Dual error amplifiers
Wide range, variable deadtime
Single·ended or push·pull operation
Under· voltage lockout with hysteresis
Double pulse protection
Master or slave oscillator operation
UC493A1UC495B: Built in 80mV
threshold for current limiting

• UC495A1UC495B: Internal 39V zener
diode
• UC495A1UC495B: Buffered steering
control

ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage, Vee (Note 2) ................ : .............. 45V
Amplifier Input Voltages ............................ Vee + 0.3V
Collector Output Voltage .................•................ 41 V
Collector Output Current ............................... 250mA
Continuous Total Dissipation ......................... 1000mW
@ (or below) 25·C free air temperature range (Note 3)
Storage Temperature Range .................... -65· to +150·C
Lead Temperature %6" (1.6mm) from case for 60 seconds,
J Package ............................................ 300·C
Lead Temperature %6" (1.6mm) from case for 10 seconds,
N Package ........................................... 260··C
Not•• : 1. Over operating free air temperature range unless otherwise noted.

RECOMMENDED OPERATING CONDITIONS
Supply Voltage Vee ................................. 7V to 40V
Error Amplifier Input Voltages ................. -0.3V to Vcc-2V
Collector Output Voltage .................................. 40V
Collector Output Current (each transistor) ............ : .. 200mA
Current into Feedback Terminal ......................... 0.3mA
Timing Capacitor, CT .....................•. 0.47nF to 1O,000nF
Timing Resistor, RT ............................ 1.8KO to 500KO
Oscillator Frequency ................•......... 1kHz to 300kHz
Operating Free Air Temperature
UC493A, UC494A, UC495A, UC495B ....... -55·C to +125·C
UC493AC, UC494AC, UC495AC, UC495BC ..... O.~C to +70·C

2. All voltage values are with respect to network ground terminal.
3. For J package, derate at 8.2mW/'C for ambient temperature
above +28'C. For N package, derate at 9.2mW/'C for ambient
temperature above +41 'C.

BLOCK DIAGRAM
(UC495A & UC495B)

R,
E,

C, --1'''"'-'''':'''::'--''-'

FUNCTION TABLE

DEAD- -O.lV
TIME -11-+----1/
CONTROL

j-----,
I

I

I

NON
INV. INPUT----Il~
INV. INPUT·-----ti"

REFouT

39V
3K

t-vv~--~------GND

PWMCOMP-~---~

'-----I> (UC493

12/83

Output Function

Ground

Single-Ended or
Parallel Operation

VAEF

Push-Pull Alternating
Outputs

UC495A and UC495B Only
Steering Control
(Output Control

,I
COMPo

Output Control
Connected to:

I ______
Vz
L
-':

at VFlEF)

(UC495A & UC495B)

Vs < O.4V
V. > 2.4V

& UC495B)

3·36

Output Function
PWM Output at Q,
PWM Output at Q,

~UNITR_DDE

UC493A
UC494A
UC495A
UC495B

CONNECTION DIAGRAMS
UC493A/UC493AC
UC494A/UC494AC

DIL·l6 (Top View)
J or N Package

DIL·l8 (Top View)
J or N Package

ERROR
AMP

ERROR
AMP

NON·INY INPUT

I

+

NON·INY INPUT

I

+

INY INPUT

2

-

INY INPUT

2

-

COMPEN/PWM COMP INPUT

DEAD TIME CONTROL

4

GROUND

7

DEAD TIME CONTROL

UC493AC
UC494AC
UC495AC
UC495BC

UC495A1UC495AC
UC495B/UC495BC

3 =0 IV
4

GROUND 7J--......-');"~'l!.21

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, oyer recommended operating free·air temperature
range, Vee = 15V, f = 10kHz.)
PARAMETER

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

4.95

5

5.05

V

2

25

mV

15

mV

Reference Section

=1mA, TA =25·C
=7V to 40V
10 =1mA to 10mA
A TA =Min. to Max.
VREF =0, TA =25·C
10

Output Voltage (V REF)
Input Regulation

Vee

Output Regulation
Output Voltage over Temperature
Short Circuit Output Current (Note 1)

1
4.90
10

35

5.10

V

50

mA

Oscillator Section
Frequency (Note 2)

CT

=O.OlpF, RT =12kn

10

kHz

Standard Deviation of Frequency
(Note 3)

All values of Vee, CT, RT,
TA constant

10

%

Frequency Change with Voltage

Vee

0.1

%

Frequency Change with Temperature

CT O.OlpF, RT 12kn
A TA Min. to Max.

=7V to 40V, TA =25·C
=
=
=

2

%

-2

-10

pA

3

3.3

Deadtime Control Section (Output Control connected to VREF)
Input Bias Current (Pin 4)

V(PIN

41

Maximum Duty·Cycie (Each Output)

V(PIN

41

Input Threshold Voltage (Pin 4)

=OV to 5.25V
=OV

Zero Duty·Cycie
Maximum Duty·Cycle

%

45
0

V

Amplifier Section (Current Limit specifications apply to UC493A and UC495B only)
I nput Offset Voltage

I Error
I Current Limit

Input Offset Current
Input Bias Current

I Error
I Current Limit

31

=2.5V
70

=2.5V
Vo (P(N 31 =2.5V

Vo (P(N

I Error
I Current Limit

Common·Mode Input Voltage Range
Open Loop
Voltage Gain

Vo (PIN

Vee

31

=3V, Vo =0.5V to 3.5V

I Error
I Current Limit

Vee

Output Sink Current (Pin 3)

VID

Output Source Current (Pin 3)

VID

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

25

250

-0.2

-1

-1

-2

=40V, TA =25·C
=-15mV to -5V, V(PIN 31 =0.7V
=15mV to 5V, V(PIN 31 =3.5V
3·37

mV
nA
pA
V

70

95

66

90

dB

800

kHz

65

80

dB

50

70

0.3

0.7

Unity Gain Bandwidth
Common·Mode
Rejection Ratio

10
90

0.3 to
Vee -2

=7V to 40V

A Vo

2
80

-2

mA
mA

PRINTED IN

u.s

A

II

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, over recommended operating free-air temperature
range Vce = 15V f = 10kHz)
PARAMETER

TEST CONDITIONS

MIN.

TYP.

UC493A UC493AC
UC494A UC494AC
UC495A UC495AC
UC495B UC495BC

MAX.

UNITS

100

JlA

-100

JlA

Output Section

=40V, Vee =40V
=Ve =4OV, VE =0
VE =0, Ie =200mA
Ve =15V, IE =-200mA
VI =VREF

Collector Off-State Current

VeE

Emmitter Off-State Current

Vee

Collector-Emitter
Saturation Voltage

I Common-Emitter
I Emitter-Follower

Output Control I nput Current

2

1.1

1.3

1.5

2.5

V

3.5

mA

PWM Comparator Section
Input Threshold Voltage (Pin 3)

Zero Duty-Cycle

Input Sink Current (Pin 3)

V(PIN 3)

4

=0.7V

0.3

V

4.5

0.7

mA

Steering Control (UC495A and UC495B only, see Function Table)
V(PIN 13)
I nput Current

V(PIN 13)

=0.4V, Ql active
=2.4V, Q2 active

-200
JlA

300

Deadband

mV

500

Zener Diode Circuit (UC495A and UC495B only)

=45V, Iz =2mA
=IV

Breakdown Voltage

Vee

Sink Current

V(PIN 15)

36

39

45

V

0.2

0.3

0.6

mA

6

10

9

15

Total Device
Standby Supply Current

Pin 6 at VREF. All other

Vee

inputs and outputs open.

Vee

Under-Voltage Lockout

=15V
=40V

6.5

3.5

V

300

Hysteresis
Switching Characteristics (TA

mA

mV

=25°C)

Output Voltage Rise Time

Common-Emitter Configuration

Output Voltage Fall Time

RL

Output Voltage Rise Time

Emitter-Follower Configuration

Output Voltage Fall Time

RL

=680, CL =15pF
=680, CL =15pF

Notes: 1. Duration of the short circuit should not exceed one second.
o

2. Frequency for other values of CTand RT is approximately

1.1

f = ---

RTCT
3. Standard deviation is a measure of the statistical.distribution about the mean as derived from the formula

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-38

100

200

ns

25

100

ns

100

200

ns

40

100

ns

n
1: (Xn -x)'
n

=1

n- 1

PRINTED IN U.S.A

UC493A UC493AC
UC494A UC494AC
UC495A UC495AC
UC495B UC495BC
Figure 1. Slaving Two or More Control Circuits

Figure 2. Output Circuit of Error Amplifiers

Vee
12

v"

0-----~----------,

VREF

0-------+----.-----,

II

To Remainder
of Error
Amplifier

To Remamder
of Error
Amplifier

CircUIt

CirCUit

To Compensatlon/PWM

.----------U Comparator Input

Slave

(Pin 3)

(Additional
Circuits)

'-O"---jC,

=06mA

+

Figure 3. Output Connections for Single-Ended and Push-Pull Configurations
C,
/"-0---.--<.. Q,

rle to VREF

C,

or a Voltage
as Low as 2.4V

(1 to 250mA

Output
Control

E,
Output
Control

( I t0500mA
Tie To

C,

GND or

a Voltage
up to
04V

"---0--*"--_ Q,

to 250mA

Push-Pull Configuration

Single-Ended Configuration

Figure 5. Operation with Y,N > 40V
Using Internal Zener (UC495A and UC495B Only)

Figure 4. Internal Buffer with Deadband for
Steering Control on UC495A and UC495B

TO
FLIP
FLOP

(1

STEERING
CONTROL

Figure 6. Error Amplifier Sensing Techniques
Vo To Output

Voltage of
System

R,

+
Error

Amp

+

Error
VREF ---+-0----"1 Amp

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

=

VREF

(1

f--o----.

NEGATIVE OUTPUT VOLTAGE

Vo =

POSITIVE OUTPUT VOLTAGE

Vo

R,

+~)

3-39

-VREF

~

R,
Vo To Output
Voltage of
System

PRINTED IN U.S A

LINEAR INTEGRATED CIRCUITS

UC1524
UC2524
UC3524

Regulating Pulse Width Modulators
FEATURES
• Complete PWM Power control circuitry
• Uncommitted outputs for single-ended
or push-pull applications
• Low standby current ... BmA typical
• Interchangeable with SG1524, SG2524
and SG3524, respectively

DESCRIPTION
The UC1524, UC2524 and UC3524 incorporate on a single monolithic chip all the
functions required for the construction of regulating power supplies inverters or
switching regulators. They can also be used as the control element for high-poweroutput applications. The UC1524 family was designed for switching regulators of either
polarity, transformer-coupled dc-to-dc converters, transformerless voltage doublers and
polarity converter applications employing fixed-frequency, pulse-width modulation
techniques. The dual alternating outputs allow either single-ended or push-pull
applications. Each device includes an on-chip reference, error amplifier, programmable
oscillator, pulse-steering flip-flop, two uncommitted output transistors, a high-gain
comparator, and current-limiting and shut-down circuitry. The UC1524 is characterized
for operation over the full military temperature range of -55·C to + 125·C. The UC2524
and UC3524 are designed for operation from -25·C to +B5·C and O·C to +70·C,
respectively.

ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage, Vee (Notes 2 and 3) ....................... 40V
Collector Output Current ............................... 100mA
Reference Output Current. ............•................. 50mA
Current Through CT Terminal ............................ -5mA
Power Dissipation at TA = +25·C (Note 4) ............. 1000mW
Thermal Resistance, Junction to Ambient ............. 100·C/W
Power Dissipation at Tc =+25·C (Note 5) ............. 2000mW
Thermal Resistance, Junction to Case ..... : ............ 60·C/W
Operating Junction Temperature Range ....... -55·C to +150·C
Storage Temperature Range .................. -65·C to +150·C
Notes: 1. Over operating free·air temperature range unless otherwise

RECOMMENDED OPERATING CONDITIONS
Supply Voltage, Vee ................................. BV to 40V
Reference Output Current. .......................... 0 to 20mA
Current through CT Terminal ................ -0.03mA to -2mA
Timing Resistor, RT ........................... 1.8KCl to 100Kn
Timing Capacitor, CT .......................... 0.00 1pF to O.lpF
Operating Ambient Temperature Range
UC1524 ................................. -55·C to + 125·C
UC2524 .................................. -25·C to +B5·C
UC3524 ..................................... O·C to +70·C

noted.
2. All voltage values are with respect to the ground terminal, pin 8
3. The reference regulator may be bypassed for operation from a

fixed 5V supply by connecting the V"" and reference output
pins both to the supply voltage. In this configuration the
maximum supply voltage is 6V.
4. Derate at lOmW
for ambient temperatures above +50·e
5. Derate at 16mWre for case temperatures above +25'e

re

BLOCK DIAGRAM

CONNECTION DIAGRAM
DIL-16

J or N Package
+5V to all
internal circuitry

VREf

V1N

E8

INV NON· OSC
INPUT INV OUT
INPUT

1/82

3-40

Ca

C"

EA

(+)

(-)

R,

SID COMP
9

C,

GND

C L C L.
SENSE

~UNITRDDE

UC1524 UC2524 UC3524

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications apply for TA = -55°C to + 125°C for the UC1524,
-25°C to +85°C for the UC2524, and O°C to +70°C for the UC3524, V'N = 20V, and f = 20kHz)

UC1524/UC2524
PARAMETER

TEST CONDITIONS

UC3524

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

4.8

4.6

UNITS

Reference Section
5.0

5.2

5.0

5.4

V

Line Regulation

Output Voltage
V'N = 8 to 40V

10

20

10

30

mV

Load Regulation

IL = 0 to 20mA

20

50

20

50

mV

Ripple Rejection

f = 120Hz, T, = 25°C

66

66

dB

Short Circuit Current Limit

VREF = 0, T, =25°C

100

100

mA

Temperature Stability

Over Operating Temperature Range

0.3

Long Term Stability

TI = 125°C, t = 1000 Hrs.

20

20

mV

300

300

kHz

5

5

1

0.3

%

1

Oscillator Section
Maximum Frequency

CT = .001mfd, RT = 2kn

Initial Accuracy

RT and CT Constant

Voltage Sta bi Iity

V'N = 8 to 40V, Ti = 25°C

1

1

%

Temperature Stability

Over Operating Temperature Range

2

2

%

Output Amplitude

Pin 3, T, =25°C

3.5

3.5

V

Output Pulse Width

CT = .01mfd, T, = 25°C

0.5

0.5

/1S

Input Offset Voltage

VeM = 2.5V

0.5

5

2

10

mV

Input Bias Current

VeM = 2.5V

2

10

2

10

/1 A

%

Error Amplifier Section

72

Open Loop Voltage Gain
Common Mode Voltage

Ti = 25°C

Common Mode Rejection Ratio

T, = 25°C

Small Signal Bandwidth

Av

Output Voltage

Ti

60

80

1.8

3.4

70

3
0.5

dB
3.4

1.8

70

=OdB, T, =25°C
=25°C

80

MHz

3
3.8

0.5

45

0

V
dB

3.8

V

45

%

Comparator Section
Duty·Cycie

% Each Output On

Input Threshold

Zero Duty-Cycle

Input Threshold

Maximum Duty-Cycle

0

Input Bias Current

1

1

3.5

3.5

V
V

1

1

/1 A

Current Limiting Section
Sense Voltage

=

Pin 9 2V with Error Amplifier
Set for Maximum Out, T, = 25°C

190

Sense Voltage T.C.

210

180

0.2
-1

Common Mode Voltage
i

200

200

220

+1

-1

mV
mV;oC

0.2
+1

V

0.1

50

/1 A

1

2

V

Output Section (Each Output)
Collector-Emitter Voltage
Collector Leakage Current
Saturation Voltage
Emitter Output Voltage
Rise Time
Fall Time

Total Standby Current

40

=40V
Ie =50mA
V'N =20V
Re =2K ohm, Ti =25°C
Re =2K ohm, T, =25°C
V'N =40V
VeE

17

V

40
0.1

50

1

2

18

17

0.2

V

0.2

/1S

0.1

0.1
8

18

10

8

/1S

10

mA

(Excluding oscillator charging current, error and current limit
dividers, and with outputs open)

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3-41

PRINTED IN U.S.A.

•

UC1524 UC2524 UC3524
TYPICAL CHARACTERISTICS

Open-Loop VOlta"e Amplification
of Error mplifier
vs Frequency

Oscillator Frequency
vs Timing Components

90

1M

m 80
<>
z
0

~

to
0::

70

~ 50
<
\oJ

40

c.~
.0",,,,

r--..

10k

'1":;0::0

0:

~

~ 30

9

20

~

10

z

c,~~

~'

se:

Il.

0

C7'~o
'001

~
z

::;

'"~

r--..

~ lOOk

60

~

C7'~o

........ 'Oa",,,,
C'~b ~

...

lk

'luf:'

0

0

VIN

Tj

= 20V

=25°C

100
10k

lk

1M

lOOk

10

1

10M

FREQUENCY (Hz)

R, -

Output Dead Time vs
Timing Capacitance Value

20

50

100

TIMING RESISTOR (kn)

Output Saturation Voltage
vs Load Current

10

4.0
20V
Tj = 25°C

VIN -

g

3.5

'"~

3.0

Vee = 20V

0

\oJ

>

::;
;::

.,

0

~

...0
...

./

0:

,/

~
~

6

:0

2.5
2.0

'c

Il.

0:

0

:0

0

~

....

4

~

0.4

0
to

Note:
Dead time = blanking pulse width

0.1
0.001

PIU!

our trill II
0.004

om

1.0
.5

I
0.04

0.1
LOAD CURRENT (rnA)

C,-CAPACITANCE (PF)

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1.5

3,42

PRINT'ED IN U.S.A.

UC1524 UC2524 UC3524

PRINCIPLES OF OPERATION
The UC1524 is a fixed-frequency pulse-width-modulation voltage
regulator control circuit. The regulator operates at a frequency that
is programmed by one timing resistor (RT) and one timing capacitor
(CT). RT establishes a constant charging current for CT. This results
in a linear voltage ramp at CT, which is fed to the comparator
providing linear control of the output pulse width by the error
amplifier. The UC1524 contains an on-board 5V regulator that
serves as a reference as well as powering the UC1524's internal
control circuitry and is also useful in supplying external support
functions. This reference voltage is lowered externally by a resistor
divider to provide a reference within the common-mode range of
the error amplifier or an external reference may be used. The power
supply output is sensed by a second resistor divider network to
generate a feedback signal to the error amplifier. The amplifier
output voltage is then compared to the linear voltage ramp at CT.
The resulting modulated pulse out of the high-gain comparator is

then steered to the appropriate output pass transistor (Q, or Q2) by
the pulse-steering flip-flop, which is synchronously toggled by the
oscillator output. The oscillator output pulse also serves as a
blanking pulse to assure both outputs are never on simultaneously
during the transition times. The width of the blanking pulse is
controlled by the value of CT. The outputs may be applied in a pushpull configuration in which their frequency is half that of the base
oscillator, or paralleled for single-ended applications in which the
frequency is equal to that of the oscillator. The output of the error
amplifier shares a common input to the comparator with the
current limiting and shutdown circuitry and can be overridden by
signals from either of these inputs. This common point is also
available externally and may be employed to control the gain of, or
to compensate, the error amplifier, or to provide additional control
to the regulator.

II

TYPICAL APPLICATIONS DATA
Oscillator
The oscillator controls the frequency of the UC1524 and is
programmed by RT and CT according to the approximate formula:

cycle by clamping the output of the error amplifier. This can easily
be done with the circuit below:

V,., 16 }----------,
1N916
Comp

where

RT is in kilohms
CT is in microfarads
f is in kilohertz

Gnd

Practical values of CT fall between 0.001 and 0.1 microfarad.
Practical values of RT fall between 1.8 and 100 kilohms. This results
in a frequency range typically from 120 hertz to 500 kilohertz.

Blanking
The output pulse of the oscillator is used as a blanking pulse at the
output. This pulse width is controlled by the value of CT. If small
values of CTare required for frequency control, the oscillator output
pulse width may still be increased by applying a shunt capacitance
of up to 100pF from pin 3 to ground. If still greater dead-time is
required, it should be accomplished by limiting the maximum duty

..

®f----I~.-- ~.<" 5k
8 } -_ _ _ _ _--J

Synchronous Operation
When an external clock is desired, a clock pulse of approximately
3V can be applied directly to the oscillator output terminal. The
impedance to ground at this point is approximately 2 kilohms. In
this configuration RT CTmust be selected for a clock period slightly
greater than that of the external clock.
If two or more UC1524 regulators are to be operated synchronously,
all oscillator output terminals should be tied together, all CT
terminals connected to a single timing capacitor, and the timing
resistor connected to a single RT terminal. The other RT terminals
can be left open or shorted to VREF • Minimum lead lengths should be
used between the CT terminals.

Push-Pull Transformer·Coupled Circuit

Single-Ended LC Switching Regulator Circuit
V'

+28V

o-----j----.---.-....-----,
\"r~W...,~-o

5V, 5A

1500pF
500pF

vO.IQ
92CM·32683

UNITRODE CORPORATION. 5 FORBES ROAD
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TWX (710) 326-6509 • TELEX 95-1064

3-43

PRINTED IN U.S.A.

UC1524 UC2524 UC3524

OPEN LOOP TEST CIRCUIT
2k

1W

1--............0

Outputs

MECHANICAL SPECIFICATIONS
UC1524 UC2524 UC3524

r-

g



<

z

I

=300kO

40 RL::: 30kO

20 RL

9

,I _L. '
¥~~2~~~- r--

roo..

RL::: lOOkn_

~

1;

Pulse Width Modulator
Transfer Function
5O,----r----,---,---,---,

I I
C""'J Ol)f

1;

15
"8'

:~

I'

i!' 10k

,. ... JO

~
~

nt

C'."o

til

c.I_~
I

lk

0

1"",

06"r

~f

115
RoC,

1

100
1

10

02r---+-1-t1~+H--~--~-ttHHj
Note' Dead time = osc output pulse
WIdth plus output delay

1

20

50

01 L-__L-J-~~~__~__~-LLWLU
1
10
20
50
100

100

TIMING RESISTOR - Rr(kn)

~

5

i?
t;

OUrpUT IAT P"N 9
Overdrive:

5%
v: 10%
20%
/50%

o

/,

Turn-Off Delay From
Shutdown - Pin 10

Shutdown Delay From PWM
Comparator - Pin 9

Current Limit Amplifier Delay

,.

OUTPUT COLLECTOR CURRENT (rnA)

TJMING CAPACITOR - CT (nF) .

-

20

1?2 r"

€

~o

:-..,
'/
:f. '/,

1/7 V

~

15

v,;, 20~
RL ",2kO -

10

TJ

::

25·~

r---

~
0

10

~ 01
z

-

0

Pin

f Grorded,

~ 05

INPUT AT
PIN 9

Mlr~rra~~ II~P~6cfnu~se Width

I-

---i

I-

~

r---

t-- t-- f- Note

I I

OUTPUT AT
i'N '~ OR \3

LO

V,N :: 20V, TJ == 25°C
Pin 2 tIed to Pin 16

v," = 2bv
RL '" 2kO
TJ '" 25°C

15

OUTPUT AT
PlNI'20t 13

INPUT AT PIN 4

~ 02

I I

20

!-

0
NJe:

I I

'N~UT IT
~'N

'f

I I
I l

MI~lmu~ mp~Mrul~e WIdth

1 1° "'lh "1'"'1

1'-

1

DElA.Y TIME Cps)

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DELAY TIME (ps)

3-48

DELAY TIME (ps)

'pRINTED IN U.S.A.

LINEAR INTEGRATED CIRCUITS
Regulating Pulse Width Modulators
FEATURES
• 8 to 35V operation
• 5.1 V reference trimmed to ±1 %
• 100Hz to 500kHz oscillator range
• Separate oscillator sync terminal
• Adjustable deadtime control
• Internal soft-start
• Pulse-by-pulse shutdown
• Input undervoltage lockout with
hysteresis
• Latching PWM to prevent multiple
pulses
• Dual source/sink output drivers

UC1525A UC1527 A
UC2525A . UC2527A
UC3525A UC3527 A

DESCRIPTION
The UC1525A/ 1527A series of pulse width modulator integrated circuits are designed
to offer improved performance and lowered external parts 'count when used in designing
all types of switching power supplies, The on-chip +5.1V reference is trimmEia to ±1%
and the input common-mode range of the error amplifier includes the reference voltage,
eliminating external resistors. A sync input to the oscillator allows multiple units to be
slaved or a single unit to be synchronized to an external system clock. A single resistor
between the CT and the discharge terminals provide a wide range of dead time adjustment. These devices also feature built-in soft-start circuitry with only an external timing
capacitor required. A shutdown terminal controls both the soft-start circuitry and the
output stages, providing instantaneous turn off through the PWM latch with pulsed
shutdown, as well as soft-start recycle with longer shutdown commands. These
functions are also controlled by an undervoltage lockout which keeps the outputs off
and the soft-start capacitor discharged for sub-normal input voltages. This lockout
circuitry includes approximately 500mV of hysteresis for jitter-free operation. Another
feature of these PWM circuits is a latch following the comparator. Once a PWM pulse has
been terminated for any reason, the outputs will remain off for the duration of the period.
The latch is reset with each clock pulse. The Qutput stages are totem-pole designs
capable of sourcing or sinking in excess of 200mA. The UC1525A output stage features
NOR logic, giving a LOW output for an OFF state. The UC1527A utilizes OR logic which
results in a HIGH output level when OFF.
.

ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage, (+Vlli) ............ _...................... +40V
Collector Supply Voltage (Ve) .............. _.............. +40V
Logic Inputs ................................... -0.3V to +5.5V
Analog Inputs .... c.............................. -0.3V to +V'N
Output Current, Source or Sink ......................... 500mA
Reference Output Current. .............................. 50mA
Oscillator Charging Current .............................. 5mA
Power Dissipation at TA= +25°C (Note 2) .............. 1000mW
Thermal Resistance, Junction to Ambient ............. 100°C/W
Power Dissipation at Te = +25°C (Note 3) ............. 2000mW
Thermal Resistance, Junction to Case ................. 60°C/W
Operating Junction Temperature ............. -55°C to + 150°C
Storage Temperature Range .................. -65°C to +150°C
Lead Temperature (Soldering, 10 seconds) ............ +300°C
Notes: 1. Values beyond which damage may occur.
2. Derate at lDmWI"C for ambient temperatures above +50°C.
3. Derate at 16mWI"C for case temperatures above +25°C.

RECOMMENDED OPERATING CONDITIONS (Note 4)
Input Voltage (+V'N) .............................. +8V to +35V
Collector Supply Voltage (Ve) .................... +4.5V to +35V
Sink/Source Load Current (steady state) ........... 0 to 100mA
Sink/Source Load Current (peak) ................. 0 to 400mA
Reference Load Current. ............................ 0 to 20mA
Oscillator Frequency Range ........ ." ........ 100Hz to 400kHz
Oscillator Timing Resistor ....................... 2kO to 150kO
Oscillator Timing Capacitor ....................001pF to O.lpF
Dead Time Resistor Range .......................... 0 to 5000
Operating Ambient Temperature Range
UC1525A, UC1527A ...................... -55°C to +125°C
UC2525A, UC2527A ....................... -25°C to +85°C
UC3525A, UC3527A .......................... O°C to +70°C
Notes: 4. Range over which the device is functional and parameter limits

BLOCK DIAGRAM

are guaranteed.

CONNECTION DIAGRAM
DIL·16 (Top View)
J or N Package

GND@-----1

SHUTDOWN@---'VV-f-{;'

4/82

3-49

~UNITRDDE

•

UC1525A UC1527A
UC2525A UC2527 A
UC3525A UC3527A

ELECTRICAL CHARACTERISTICS (+VIN = 20V, and over operating temperature, unless otherwise specified)

PARAMETER

TEST CONDITIONS

UC1525A/UC2525A
UC1527A/UC2527A

UC3525A
UC3527A

UNITS

MIN,

TYP.

MAX.

MIN.

TYP.

MAX.

5.05

5.00

Reference Section
Output Voltage

TI = 25°C

5.10

5.15

5.10

5.20

V

Line Regulation

V,N = 8 to 35V

10

20

10

20

mV

Load Regulation

IL = 0 t020mA

20

50

20

50

mV

Temperature Stability (Note 5)

Over Operating Range

20

50

20

50

mV

Total Output Variation (Note 5)

Line, Load, and Temperature

Short Circuit Current

VREiF = 0, TI =25°C

80

100

Output Noise Voltal\e (Note 5)

10Hz s 10kHz, TI = 25°C

40

Long Term Stability (Note 5)

TI = 125°C

20

5.25

V

80

100

mA

200

40

200

p.Vrms

50

20

50

mV

±2

±6

±2

±6

±0.3

±1

±1

±2

±6

±3

%
%
%

5.00

5.20

4.95

OscillItor Section (Note 6)
Initial Accuracy (Notes 5 & 6)
Voltage Stability (Notes 5 & 6)

TI = 25°C
V,N = 8 to 35V

Temperature Stability (Note 5)

Over Operating Range

Minimum Frequency

RT = 200kO, CT = O.lp.F

Maximum Frequency

RT = 2kO, CT = 470pF

Current Mirror

IRT= 2mA

±3
400

Clock Amplitude (Notes 5 & 6)
Clock Width (Notes 5 & 6)

TI = 25°C

Sync Threshold

1.7

2.0

3.0

3.5

1.0

0.3

2.0

2.8

1.2

1.0

2.5

1.7

2.0
3.5

0.3

0.5

1.2

2.2

Hz
kHz

400

3.0

Sync Voltage = 3.5V

Sync Input Current

±6
120

120

2.2

mA

0.5

1.0

p.s

2.0

2.8

V

1.0

2.5

mA

V

Error Amplifier SectIon (VCM = 5.1 V)
Input Offset Voltage

0.5

5

2

10

mV

Input Bias Current

1

10

1

10

p.A

1

p.A

Input Offset Current

1

DC Open Loop Gain

RL 2! 10 Meg el

Gain·Bandwidth Product
(Note 5)

Av = OdB, Tj = 25°C

DC Transconductance
(Notes 5 & 7)

TI = 25°C, 30kel S RL S IMel

60

75

60

75

dB

1

2

1

2

MHz

1.1

1.5

1.1

1.5

mS

Output Low Level

0.2

Output High Level

0.5

0.2

0.5

V

3.8

5.6

3.8

5.6

V

Common Mode Rejection

VCM = 1.5 to 5.2V

60

75

60

75

dB

Supply Voltage Rejection

V,N = 8 to 35V

50

60

50

60

dB

Not..: 5. These parameters, although guaranteed over the recommended operating conditions, are not 100% tested in production.
1
6. Tested at fosc

=40KHz (RT =3.6kO, CT =O.ljlf, Ro =00). Approximate oscillator frequency is defined by: f =CnO.7RT + 3Ro)

7. DC transconductance (gM) relates to DC open·loop voltage gain (Av) according to the following equation: Av = gMRL
where RL is the resistance from pin 9 to ground.
The minimum 11M specification is used to calculate minimum Av when the error amplifier output is loaded.

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.

3-50

PRINTED IN U.S A

UC1525A UCl527A
UC2525A UC2527A
UC3525A UC3527A

ELECTRICAL CHARACTERISTICS (+VIN = 20V, and over operating temperature, unless otherwise specified)

PARAMETER

TEST CONDITIONS

UC3525A
UC3527A

UC1525A/UC2525A
UC1527 A/UC2527A
MIN.

TYP.

45

49

MAX.

MIN.

TYP.

45

49

0.7

0.9

UNITS
MAX.

PWM Comparator
Minimum Duty-Cycle

0

Maximum Duty-Cycle
Input Threshold (Note 6)

Zero Duty-Cycle

Input Threshold (Note 6)

Maximum Duty-Cycle

0_7

Input Bias Current (Note 5)

0_9

0

%
%
V

3.3

3.6

3.3

3.6

V

.05

1.0

.05

1.0

pA

pA

Shutdown Section

=OV, Vss =OV
= 2.5V
To outputs, Vss =5.1V, Tj =25°C
Vso =2.5V
Vso =2.5V, Tj =25°C

Soft Start Current

Vso

Soft Start Low Level
Shutdown Threshold
Shutdown Input Current
Shutdown Delay (Note 5)
Output Drivers (Each Output) (Vc

25

Vso

0.6

50

80

0.4

0.7

0.8

1.0

25

0.6

50

80

0.4

0.7

V

0.8

1.0

V

0.4

1.0

0.4

1.0

mA

0.2

0.5

0.2

0.5

pS

ISINK = 20mA

0.2

0.4

0.2

0.4

V

ISINK = lOOmA

1.0

2.0

1.0

2.0

V

=20V)

Output Low Level

ISOURCE = 20mA

18

19

18

19

ISOURCE = 100mA

17

18

17

18

Under-Voltage Lockout

VCOMP and Vss = High

6

7

6

7

Collector Lea kage

Ve

Rise Time (Note 5)

CL = InF, T/ = 25°C

100

600

Fall Time (Note 5)

CL = Inf, Tj =25°C

50

300

VIN = 35V

14

20

Output High Level

=35V

8

V
V
8

V

200

pA

100

600

ns

50

300

ns

14

20

mA

200

Total Standby Current
Supply Current

Notes: 5. These parameters, a/though guaranteed over the recommended operating conditions, are not 100% tested in production.
6. Tested at lose = 40KHz (RT =3.6kr1, CT = O.lJlF, Ro = 00).

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3·51

PRINTED IN USA

II

UC1525A UC1527A
UC2525A UC2527A
UC3525A UC3527 A

PRINCIPLES OF OPERATION AND TYPICAL CHARACTERISTICS
UC1525A Output Circuit

UC1525A Output Saturation
Characteristics

(V. Circuli Shown)

4

kov

VIN =
TA = 25°C

l
~~

t---1'iIr--+-<.U) OUTPUT

-. ~
o
5k
CLOCK

10k

RETURN

~ .....

"'-V
<::URC SA • Vo

vo.

.1 vOl
~rINK SAr

.02 .03 .04.05 .07 .10

.2

.3.4.5 ·,7

1A

OUTPUT CURRENT. SOURCE OR SINK (A)

PWM

F/F

• SUPPLY

-

.01

I-'

A

W

0---.---.

+VSUPPLV

, - - - . TO OUTPUT FILTER

0----.....- - -......-

RETURN

For single-ended supplies, the driver outputs are grounded.
The Vc terminal is switched to ground by the totem-pole source
transistors on alternate oscillator cycles.

+VsuPPt.Y

0---.-----------,

In conventional push-pull bipolar designs, forward base drive
is controlled by R,-R 3 • Rapid turn-off times for the power
devices are achieved with speed-up capacitors C, and C2•

0--...,.--------.,

+VSUPPLVo--...,.------------.-----,

T,

II
c,

RETURN o--+----------<~
RETURN

The low source impedance ofthe output drivers provides rapid
charging of power FET input capacitance while minimizing
external components.

__

__I

Low power transformers can be driven directly by the UC1525A.
Automatic reset occurs during dead time, when both ends of
the primary winding are switched to ground.

UNITRODE CORPORATION. 5 FORBES ROAD

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TWX (710) 326-6509 • TELEX 95-1064

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PRINTED IN U.S.A,

UC1525A UC1527A
UC2525A UC2527A
UC3525A UC3527A

PRINCIPLES OF OPERATION AND TYPICAL CHARACTERISTICS
SHUTDOWN OPTIONS (See Block Diagram)

Since both the compensation and soft-start terminals (Pins 9
and 8) have current source pull-ups, either can readily accept
a pull-down signal which only has to sink a maximum of
lOOIlA to turn off the outputs. This is subject to the added
requirement of discharging whatever external capacitance may
be attached to these pi ns.
An alternate approach is the use of the shutdown circuitry of
Pin 10 which has been improved to enhance the available
shutdown options. Activating this circuit by applying a positive
signal on Pin 10 performs two functions: the PWM latch is
immediately set providing the fastest turn-off signal to the
outputs; and a 150llA current sink begins to discharge the
external soft-start capacitor. If the shutdown command is
short, the PWM signal is terminated without significant
discharge of the soft-start capacitor, thus, allowing, for
example, a convenient implementation of pulse-by-pulse
current limiting_ Holding Pin 10 high for a longer duration,
however, will ultimately discharge this external capacitor,
recycling slow turn-on upon release.

UC1525A Oscillator Schematic

7.4k

2k

14k

RAMP
TO PWM

Pin 10 should not be left floating as noise pickup could
conceivably interrupt normal operation.

CLOCK

Oscillator Discharge Time
vs. R. and C,

Oscillator Charge Time
vs. R, and Cr
200

,-,.----r-,-,.--,--,.-,.----r-,.-,----r----.

100

f--I--I-f--I--+-+H'-I-:H+-IT-t-.H+-I

50

cf

20

:E

:r:

:E

:r:

8

g

'"

~ 300 f---I---+-+-H'---+---,f--+---l'--I+-~
~
ffi
 VON -5 0
G_
0.2

z

1

OJ

0:

/

100

V

OJ

!;(

'"en
OJ

ffi
en

SO

l/

c£

V

10

~

I-

:::>

~

15

20

?S

30

3S

2.46 2.48 2.50

40

Activation Delay vs
Capacitor Value

Current Limit Input Threshold
200

0.1

.01

<

IV

!::
u

1E
.001

OJ

0

.0001

2.50 2.S2 2.54

SENSE INPUT VOLTAGE - (VOLTS)

= 10ms/pF

5

0

'"

OJ

<
u

..

o

~

z

Ii:

I-

:::>

DELAY=~

~

u

~

/

VON SUPPLY VOLTAGE - (VOLTS)

0

u

/

Input

OJ

LO

<
0:
0:

Input

6

..

~

en
iii

LLIJ ulJvLl.

V

Recommended Series Gate ReSistance, Ro

:I:

V
.0.01

V

V

.s
)

OJ

~
~

Ii:
0
--'
0
J:

cn
OJ
0:

J:

I-

100
70
SO
30

VIN = IOV

I'

;;;-

I-S
r- YTH

20

I-

1\

+

1"-

11 1

10 ~setl~mp

e-

.J

R, = 2kO

I'

-+

I'
D.

t- R,

-

"

JJ
.01

0.1

LO

10

lk

DELAY TIME - (MILLISECONDS)

3k Sk 10k

30k 50!< .IM

.3M

1M

R, THRESHOLD SETTING RESISTOR - (OHMS)

Current Limit Amplifier
Frequency Response

Current Limit Amplifier Gain

80C==----+______~~~~----

VIN = lOV
R, = 2kO
TJ = 25°C

70 ~~~+R, = 30kO
60

iii
OJ

____~~~~____~

180

8

R, = IOkO

270 ~

..

'"

-5
0.2

VIN

Sensing Multiple Supply Voltaps
BIAS
SUPPLY -------~- TO SGl39 COMPARATORS
MAIN
POSITIVE
SUPPLY

TO
SHUTDOWN
CIRCUIT

GROUND

ADDITIONAL
POSITIVE
SUPPLY

~

1

R.

R.

=

NEGATIVE
SUPPLY
VOLTAGE

R,

Overcurrent Shutdown

Input Line Monitor

MAIN
BUS
SUPPLY

~

________________________________

~~

BIAS
VOLTAGE

r----------

I
I

SCR
"CROWBAR"

I
I

I
I

i~~JT-~-2.5V

I

R,
PIN8

~--2.5V
SUPPLY

DELAY

PIN 9
OUTPUT

R2

Rse

~~fURN~-~~~--------------------------------~. .

U-

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

0FF
ON

3-65

PRINTED IN USA

•

LINEAR INTEGRATED CIRCUITS

UC1637
UC2637
UC3637

Switched Mode Controller for DC Motor Drive

FEATURES

DESCRIPTION

• Single or dual supply operation

The UC1637 is a pulse width modulator circuit intended to be used for a variety of PWM
motor drive and amplifier applications requiring either uni-directional or bi-directional
drive circuits. When used to replace conventional drivers, this circuit can increase
efficiency and reduce component costs for many applications. All necessary circuitry is
included to generate an analog error signal and modulate two bi-directional pulse train
outputs in proportion to the error signal magnitude and polarity.

• ± 2.5V to ±. 20V input supply range

• ± 5% initial oscillator accuracy; ±

10%

over temperature
• Pulse-by-pulse current limiting
• Under-voltage lockout

This monolithic device contains a sawtooth oscillator, error amplifier, and two PWM
comparators with ± 100mA output stages as standard features. Protection circuitry
includes under-voltage lockout, pulse-by-pulse current limiting, and a shutdown port
with a 2.5V temperature compensated threshold.

• Shutdown input with temperature
compensated 2.5V threshold
• Uncommitted PWM comparators for
design flexibility

The UC1637 is characterized for operation over the full military temperature range of
-55°C to + 125°C, while the UC2637 and UC3637 are characterized for -25°C to +85°C
and O°C to +70°C, respectively.

• Dual lOOmA, sourcelsink output
drivers

BLOCK DIAGRAM
+A'N

-A'N

+V. 6~-----------'----------1---~--~------------------~~~--'

ISET
Is

-C/l
+C/l

E/A OUTPUT

12/83

-B'N +B'N

3-66

~UNITRDDE

UC1637
UC2637
UC3637

CONNECTION DIAGRAM

ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage (±Vs) .......................................................... ±20V
Output Current, Source/Sink (Pins 4, 7) ....................................... 500mA
Analog Inputs (Pins I, 2, 3, 8, 9, 10, 11, 12, 13, 14, 15, 16) ....................... ±Vs
Error Amplifier Output Current (Pin 17) ...................................... ±20mA
Oscillator Charging Current (Pin 18) ............................................ -2mA
Power Dissipation at TA = 25·C ............................................. 1000mW
Derate at lOmWrC For TA Above 50·C
Power Dissipation at Tc = 25·C ............................................... 2000W
Derate at 16mWrC for Tc above 25·C
Thermal Resistance, Junction to Ambient ................................... 100·C/W
Thermal Resistance, Junction to Case ........................................ 60·C/W
Storage Temperature Range ............•........................... -65·C to +150·C
Lead Temperature (Soldering, 10 Seconds) ................................... +300·C

DIL·18 (TOP VIEW)
J or N PACKAGE

•

Note: 1. Currents are positive into, negative out of the specified terminal.

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications applyforTA=-55·Cto + 125·Cfor UC1637; -25·Cto +85·C
for the UC2637; and O·C to +70·C for the UC3637; +Vs
16.7kn, CT = 1500pF)

PARAMETER

=+15V, -Vs = -15V, +VTH =5V, -VTH =-5V, RT =

UC1637/UC2637

TEST CONDITIONS

UC3637

UNITS

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

9.4

10

10.6

9

10

11

kHz

5

7

5

7

%

Oscillator

=25·C

Initial Accuracy

Tj

Voltage Stability

Vs =± 5V to ± 20V, VP1N
VP1N 3 = -3V

Temperature Stability

Over Operating Range

+VTH Input Bias Current

VP1N

-VTH Input Bias Current

1

= 3V

=6V
VP1N 2 =OV
2

0.5

2

-10

0.1

10

-10

-0.5

+Vs-2

+VTH, -VTH Input Range

0.5

2

%

-10

0.1

10

pA

-10

-0.5

-Vs+2 +Vs-2

pA
-Vs+2

V
mV

Error Amplifier
Input Offset Voltage
Input Bias Current
Input Offset Current
Common Mode Range
Open Loop Voltage Gain

=OV
=OV
VCM =OV
Vs = ± 2.5 to 20V
RL = 10K
VCM

1.5

5

1.5

10

VCM

0.5

5

0.5

5

pA

0.1

1

0.1

1

pA

-Vs+2
75

Slew Rate

+Vs
100

-Vs+2
80

15

+Vs

V

100

dB

15

Vips

dB

Unity Gain Bandwidth
CMRR

Over Common Mode Range

PSRR

Vs

Output Si nk Current

VPlN

Output Source Current

=±

2.5V to ± 20V

=OV
VP1N 17 =OV

75

100

75

100

75

110

75

110

-.50

17

High Level Output Voltage

-20

-50

5

11

5

11

13

13.6

13

13.6

Low Level Output Voltage

-14.8

-13

-14.8

dB
-20

mA
mA
V

-13

V

PWM Comparators

=OV
=OV
VCM =OV
Vs =± 5 to ±

Input Offset Voltage

VCM

20

Input Bias Current

VCM

2

Input Hysteresis
Common Mode Range

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

-Vs+1

3-67

2

10

+Vs-2 -Vs+1

pA
mV

10

10
40V

mV

20
10

+Vs-2

V

PRINTED IN U.S A

UC1637
UC2637
UC3637

ELECTRICAL CHARACTERISTICS (Ut:lless otherwise stated. these specifications apply for TA =-55°C to + 125°C for UC1637; -25°C to +85°C
. for the UC2637; and O°C to + 70°C for the UC3637; +V.
16.7kCl. CT = 1500pF)

PARAMETER

=+ 15V. -V. = -15V +VTH =5V. -VTH =-5V. RT =
"

UCl637/UC2637

TEST CONDITIONS

MIN.

UC3637

TYP.

MAX.

MIN.

200

210

180

UNITS

TYP.

MAX.

200

220

Current Limit
Input Offset Voltage

VCM

=OV. Ti =25°C

190

Input Offset Voltage T.C.

-0.2
-10

Input Bias Current
Common Mode Range

V.

=± 2.5V to ± 20V

-0.2
-10

-1.5

-V.

+V.-3

-V.

-2.7

-2.3

mV
mvrc

-1.5

J1A
+V. -3

V

Shutdown
Shutdown Threshold

-2.3

(Note 3)

Hysteresis
Input Bias Current

-2.5
40

VPIN

14

=+V. to -V.

-10

-10

-0.5

-2.5

-2.7

V

40

mV

-0.5

J1A

Under·Voltage Lockout
Start Threshold

(Note 4)

4.15

Hysteresis

4.15

5.0

5.0

0.25

0.25

V
mV

Total Standby Current
Supply Current

8.5

15

8.5

15

I.,NK

-14.9

-13

-14.9

-13

·I.,NK

-14.5

-13

-14.5

-13

mA

Output Section
Output Low Level
Output High Level
Rise Time
Fall Time

=20mA
=100mA
ISOURCE =20mA
I.OURCE = 100mA
(Note 2) CL = 1nf. Ti =25°C
(Note 2) CL = 1nf. Ti =25°C

13

13.5

13

13.5

12

13.5

12

13.5

V
V

100

600

100

600

ns

100

300

100

300

ns

Notes: 2. These parameters. although guaranteed over the recommended operating conditions, are not 100% tested in production.
3. Parameter measured with respect to +Vs (Pin 6).
4. Parameter measured at +Vs (Pin 6) with respect to -Vs (Pin 5).

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

3·68

PRINTED IN USA

UC1637
UC2637
UC3637

FUNCTIONAL DESCRIPTION
Following is a description of each of the functional blocks shown
in the Block Diagram.

-VTH respectively. The +VTH terminal voltage is buffered internally
and also applied to the lee. terminal to develop the capacitor
charging currentthrough RT. If RT is referenced to -Vsas shown in
Figure 1, both the threshold voltage and charging current will vary
proportionally to the supply differential, and the oscillator
frequency will remain constant. The triangle waveform oscillators
frequency and voltage amplitude is determined by the external
components using the formulas given in Figure 1.

Oscillator
The oscillator consists of two comparators, a charging and
discharging current source, a current source set terminal, ' se',
and a flip· flop. The upper and lower threshold of the oscillator
waveform is set externally by applying a voltage at pins +VTH and

R,

------+VTH

R,
-----VTH

1.= _.!..:(+..!.V''''")'''R~-'('--V,-,,),--

.f-VTH = (-Vs)

f=

-v'" = (-v.) + ((+V.) - (-v.) (R,)\

Is

2 C, [(+Vn<) - (-Vn<)]

+

UC1631

!(+Vs)-<-VS)(R2+R3»)
\"
Rl + RJ + R3
R,+R 2 +R3

R,

J
-v.

Figure 1. Oscillator Set Up
PWM Comparators
Two comparators are provided to perform pulse width modulation
for each of the output drivers. Inputs are uncommitted to allow
maximum flexability. The pulse width of the outputs A and B is a
function of the sign and amplitude of the error signal. A negative
signal at Pin lOand Swill lengthen the high'state of output Aand

shorten the high'state of output B. Likewise, a positive error signal
reverses the procedure. Typically, the oscillator waveform is
compared against the summation of the error signal and the
threshold set on Pin 10 and S.

+V.

UC1631

OSCILLATOR

(PIN 2)

M

---+-t-----i

>----A

ERROR
SIGNAL
(PIN 17)

>----B

Figure 2. Comparator Biasing

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3·69

PRINTED IN U.S.A.

•

UC1637
UC2637
UC3637
MODULATION SCHEMES
Case A Zero Deadtime (Equal voltage on Pi n 10 and Pi n 8)

power-amplifiers are used. Refer to Figure 38.

In this configuration; maximum holding torque or stiffness and
position accuracy is achieved. However, the power input into the
motor is increased. Figure 3A shows this configuration.

case C Increased Deadtime and Deadband Mode
(Voltage on Pin 10> Pin 8)
With the reduction of stiffness and position accuracy, the power
input into the motor around the null point of the servo loop can be
reduced or eliminated by widening the window of the comparator
circuit to a deg·ree of acceptance. Where position accuracy and
mechanical stiffness is unimportant, dead band operation can be
used. This is shown in Figure 3C.

case B Small Deadtinie (Voltage on Pin 10 > Pin 8)
A small differential voltage between Pin 10 and 8 provides the
necessary time delay to reduce the chances of momentary short
circuit in the output stage during transitions, especially where

(PlnlO)-....,....~

(Pin 8,10)

- --

-

-- --- - --

(Pln8)/"""'- - - II - - - -

---

II

JlLfLJL
'I

lJrLJLs
II

- I 1- DEADTIME
(B)

(A)

(Pin 10)

--A---~'---A--

(Pin 8)

L ___ V ____y ____~

(Pm 10) - - - - - - - - - - - - - - - - - - - - -

(Pm B)

_______________________

BOUT _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

II

---l--.L----~-~----H--I

A~,

(Pin8)~

(PlnlO)~

I

I

I

,I

Aou,JLJLSL

I
I

I

AM

I
I

I I

II II

II
I

I

I

iii

I

I

I

I

I

Bou,LJLSLJI

BOUT _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

I I

1

(C)

Figure 3_ Modulation Schemes Showing (A) Zero Deadtime (B) Deadtime and (C) Deadband Configurations.

Output Drivers
Each output driver iscapable of both sourcing and sinking 100mA
steady state and up to 500mA on a pulsed basis for rapid
switching of either POWERFET or bipolar transistors. Output levels
are typically -Vs +0.2V@ 50mA low level and +V. - 2.0V@50mA
high level.

VSTART =

R,

UC1637

+v.

+v.~
2.5V

Error Amplifier
The error amplifier consists of a high slew rate (15VI/ls) op-amp
with a typical IMHz bandwidth and low output impedance.
Depending on the ± V. supply voltage, the common mode input
range and the voltage output swing is within 2V of the Vs supply.

,

1

+

SHUTDOWN

R,

~--------------~14~-------4

R,

Under-Yoltage Lockout
An under-voltage lockout circuit holds the outputs in the off state
until a minimum of 4V is reached. At this point, all internal
circuitry is functional and the output drivers are switched on. If
external circuitry requires a higher starting voltage, an over-riding
voltage can be programmed through the shutdown terminal as
shown in Figure 4.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2.5 (R, + R,)

-v.

Figure 4. External Under-Yoltage Lockout

3-70

PRINTED IN U.S.A.

UC1637
UC2637
UC3637
Shutdown Comparator
The shutdown terminal may be used for implementing various
shutdown and protection schemes. By pulling the terminal more
than 2.5VbelowVIN, the output drivers will be enabled. This can be
realized using an open collector gate or NPN transistor biased to

either ground or the negative supply. Since the threshold is
temperature stabilized, the comparator can be used as an accu·
rate low voltage lockout (Figure 4) and/or delayed start as in
Figure 5.

UC1637

+v.

-v.
Figure 5. Delayed Start·Up

Current Umit
A latched current limit amplifier with an internal 200mVoffset is
provided to allow pulse·by·pulse current limiting. Differential
inputs will accept common mode signals from -Vs to within 3V of

the +Vs supply while providing excellent noise rejection. Figure 6
shows a typical current sense circuit.

Rs

Figure 6. Current Umit Sensing

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3-71

PRINTED IN U.S.A.

•

::;..

-Ire

:E~~
x_-I
-z",

;:::!ClO
0-10
-0",

~~o
~s:o

~~~

v,

<.

N
"

~~::n

"S "N"'

~tj~

~·o
"'-Iz

.~

x~.

~~~

11

~S~

10

6

~(fJ

~~
0"
o

"

+Vs

"

.

IS I,

""'

~'. "

-

+

"'!XI

m",

AtN'

SHUT·
DOWN

,.

'1~

'''"14

,

1

Aou, ~J

+VTH

-GN2222

_~.lpF

ill

=;::

2

~

G,

UC1637

400

~

~

0

...z~
0

u

fil

3

"~

-VTH

Bou,

~
~

100

Ilr

Gil

E/A
OUTPUT

-Vs

"
S

27

Bo"

-

+

9

S

,~

-=

r2-

]

~'--

2

"
S
47K

Ts

lul17

')
I
I

I
I
I

-

I

- I

I

10K

~

5
ci

~~

-:!:-

4.7M

M

I---

...;

0.22pF

~
9

ISO

-fl

+ 12
;

5

113

- 13

E/A
15 +

"S

~
PIG900

3

""' '""'" =';=

~

'"

~

400

16 -

J

2N2222

0

"

~
~

ISO

w

.:...

~..-

12

rv

"

6~'5

100

J

~

"

...L_

Figure 7. Bi·Directional Motor Drive with Speed Control and Power-Amplifier

ccc

nnn
WI\> ....

""'"''
...............

WWW

UC1637
UC2637
UC3637
V'N--~--------------------------------------------------------~~--~--~---'

•
POSITION
COMMAND
VOLTAGE

POSITION FEEDBACK VOLTAGE

Figure 8. Single Supply Position Servo Motor Drive

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-73

PRINTED IN U.S A.

LINEAR INTEGRATED CIRCUITS

UC1704
UC3704

Bridge Transducer Switch
FEATURES
• Dual matched current sources
• High-gain differential sensing circuit
• Wide common-mode input capability
• Complimentary digital open-collector
outputs

UC1704 COMPATIBLE SENSORS

/

SENSOR TYPE

• Externally programmable time delay

/ ACTIVATION SOURCE.I

• Optional output latch with reset

1;~//w
I ~,I, 'Ii I

/

• Built-in diagnostic activation

h<1~~~"
X
X
X
X X X

Thermistor
Sensistor
Thermocouple
Semiconductor
Photo Voltaic
Photo Resistive
Strain Gage
Piezoelectric
Magneto Resistive
Inductive
Hall Effect
Capacitive

• Wide supply voltage range
• High current heater power source driver

X
X

DESCRIPTION
This integrated circuit contains a complete signal conditioning
system to interface low-level variable impedance transducers to a
digital system. A pair of matched, temperature-compensated current sources are provided for balanced transducer excitation followed by a preCision, high-gain comparator. The output of this
comparator can be delayed by a user-selectable duration, after
which a second comparator will switch complimentary outputs
compatible with all forms of logic. This output section can be
separately activated for diagnostic operation and has an optional
latch with external reset capability. An added feature is a high
current power source useful as a heater driver in differential
temperature sensing applications.

X X X
X X X
X X X X X X
X X
X X X
X X
X X X X
X X
X

The UC1704 is characterized for operation over the full military
temperature range of -55°C to + 125°C while the UC3704 is
designed for O°C to + 70°C environments.

BLOCK DIAGRAM
COMP 2 THRESHOLD

11

VREF

5

t------~

12
CURRENT OUTPUT

12/83

DELAY

3-74

COMP2
INPUT

RESET

REMOTE
ACTIVATE

~UNITRDDE

UC1704
UC3704
ABSOLUTE MAXIMUM RATINGS

CONNECTION DIAGRAM

Supply Voltage (+V ,N) •..•••..••.•••••••••...••••..•••...••••••••••••••••••••••••• 40V
Output Current (each output) .................................................. 50mA
Buffer Power Source Current ................................................. 200mA
Comparator 1 Inputs ................................................... -0.5V to VREF
Comparator 2 Inputs ....................................................... 0 to 5.5V
Remote Activation and Reset Inputs ......................................... 0 to 5.5V
Power Dissipation at TA =25°C ............................................. 1000mW
Derate at lOmW/oC for TA > 50°C
Operating Junction Temperature .................................... -55°C to + 150°C
Storage Temperature Range ........................................ -65°C to + 150°C
Lead Temperature (Soldering. 10 Seconds) ................................... +300°C
NOTE:

DIL-16 (TOP VIEW)

J or N PACKAGE

II
REM. ACT
RESET
COMP.2IN

Unless otherwise specified. all voltages are with respect to ground (Pin 1).
Currents are positive into. negative out of the specified terminal.

COMP.2
THRES
DELAY

ELECTRICAL CHARACTERISTICS

(Unless otherwise stated, these specifications apply forT. = -55°C to + 125°Cforthe UC1704and O°C
to +70°C for the UC3704; Y,N = 15V)

PARAMETER

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Power Inputs
Supply Voltage Range

TA > O°C

Supply Current

Y,N

36

V

5

10

mA

2.1

2.2

2.3

V

-1

-2

-3

mVrC

IlV ,N

2

10

mV

Illo

2

10

mV

±25

mA

4.2

=36V

Reference Section (with respect to Y,N)

= 25°C

VREF Value IV ,N - VREF I

TJ

VREF Temperature Coefficient

Note 1

Line Regulation

=4.2 to 25V
=0 to 4mA
Y,N =36V
VREF =Y,N or Ground

Load Regulation
Short Circuit Current
Current Sources (Q, and Q.)
Output Current (Note 2)
Output Offset Current

Current Set
Cu rrent Set

=lOpA
=200pA

-9

-9.5

-10

pA

-180

-195

-200

pA

0

±1

pA

=REB =20KO

REB

Comparator One
Input Offset Voltage

±1

±4

mV

Input Bias Current

-100

-300

nA

±60

Input Offset Current

=0 to 12V

CMRR

VCM

Voltage Gain

RL> 150KO

Delay Current Source
Output Rise Time

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

=

Overdrive 10mV,
Co 15pF, TJ 25°C

=

=

3-75

60

70

70

85

34

40
2

nA
dB
dB

52

pA

Vips

PRINTED IN

u.s A

UC1704
UC3704

ELECTRICAL CHARACTERISTICS

=

(Unless otherwise stated, these specifications apply for T. -55°Cto +125°Cforthe UC1704and O°C
to + 70·C for the UC3704; V'N = 15V)

PARAMETER

TEST CONDITIONS

TYP.

MAX.

2.2

3.0

3.8

V

14

20

24

KO

MIN.

UNITS

Comparator Two (Qour and Qour)
Threshold Voltage
Threshold Resistance

To Ground

Input Bias Current

=5V
=OV
Pin 13 =OV
T. =25·C
T. =25°C
lour =16mA
lour =50mA
Your =40V
V'N (Pin 12)

Remote Activate Current

Pin 14

Reset Current
Remote Activate Threshold
Reset Threshold
Output Saturation
Output Leakage

Compo Overdrive
RL 5K to V'N

Output Response

=

1

3

0.2

0.5

/lA
.mA

0.2

0.5

mA

0.8

1.2

0.8

1.2

=IV I Turn-on

V
V

0.2

0.5

V

0.7

2.0

V

0.2

10

/l A

0.4

I Turn·off

/IS

1.0

Buffer
Set Voltage (V'N - Vs)

TJ

Drive Current

TJ

=25°C, Is =100mA
= 25·C, Rs =2000, VD =OV

V

1.9

2.1

2.3

90

100

120

I

mA

Note: 1. Parameter guaranteed by des,gn, not tested," product,on.
2. Collector output current =

V'N - V""F - VBE
R.

APPLICATIONS INFORMATION
Sensor Section
The input portion of the UC1704 provides both excitation and
sensing for a iow·ievei, variabie impedance transducer. This
circuitry consists of a pair of highly matched PNP transistors
biased for operation as constant current sources followed by a
high gain precision comparator.

The sensor comparator has a current source pull·up atthe output
so that an external capacitor from this pointto ground can be used
to provide a programmable delay before reaching the second
comparator's threshold. The low·impedance on·state of Comp l's
output provides quick reset of this capacitor. This programmable
delay function is useful for providing transient protection by
requiring that Comp 1 remain activated for a finite period oftime
before Comp 2 triggers. Another application is in counting
repetitive pulses where a miSSing pulse will allow Comp l'soutput
to rise to Comp 2's threshold. This time delay function is:

The reference voltage at the bases of the PNP transistors has a TC
to offset the base·emitter voltage variation of these transistors
resulting in a constant voltage across the external emitter
resistors and correspondingly constant collector currents. With
the emitter resistors external, the user has the option of tailoring
the collector currents for balancing, offsetting, or to provide a
unique temperature characteristic.

Delay

With the PNP transistors' optimum current ranging from 10 to
200/lA, and the common· mode input voltage of the comparator
usable from ground to (V'N - 3V), a wide range of transducer
impedance levels is possible.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

=

Comp 2 Threshold
Delay Current

x CD "" 175 ms//IF

If hysteresis is desired for Comparator I, it may be
accommodated by applying positive feedback from the delay
terminal to the non·inverting input on Pin 7. This will aid in
providing oscillation-free transitions for very slowly changing
inputs.

3·76

PRINTED IN U S.A

UC1704
UC3704

Output Section
The output portion of the UC1704 is basically a second
comparator with complimentary, open-collector outputs. This
comparator has a built-in, ground-referenced threshold
implemented with a high-impedance current source and resistor
so that it may be easily overridden with an external voltage source
if desired. Comp 2's input transistors are NPN types which require
at least IV of common-mode voltage for accurate operation and
should not see a differential input voltage greater than 6V.

Reset terminal low overrides the Remote Activate Pin releasing
the latch.

Reference Buffer
This circuit is designed to provide up to lOOmA to drive a highcurrent external PNP transistor useful for powering a heater for
differential temperature measurements. Care must be taken that
power dissipation in Q. does not cause excessive thermal
gradients which will degrade the accuracy of the sensing circuitry.

For diagnostic or latching purposes, the output logic is equipped
with a Remote Activate and Reset function. These pins have
internal pull-ups and are only active when pulled low below a
threshold of approximately 1V. A low signal at the Remote Activate
Pin causes the outputs to change state in exactly the same
manner as if Comp 2's input is raised above the threshold on Pin
11. If Pin 16 is connected to Pin 14, positive feedback results and
the outputs will latch once triggered by Comp 2's input. Pulling the

Using a heating element attached to a temperature sensitive
resistor, RSl, in one leg of the input bridge implements a flow
sensor for either gasses or liquids. As long as there is flow, heat
from the element is carried away and the sensor voltage remains
below threshold. Using an identical sensor, RS2, without a heater
to establish this threshold compensates for the ambienttemperature of the flow.

Typical Application For Monitoring Liquid or Gas Flow

fUc1704 - - - - - -

I
I

lrTl----~
=

-------~

VIN-VREF

=

@25°C

2 2V

5
RSI

----- ~

HEATER BUFFER

---l."'II. .

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

I------,NPUT SENSOR SECTION - -___0-11...41 - - - - - - OUTPUT SECTION--1

3-77

PRINTED IN U.S A

•

LINEAR INTEGRATED CIRCUITS
Dual Output Driver

UC1706
UC3706

FEATURES

DESCRIPTION

• Dual, 1.5A Totem Pole Outputs

The UCIl06 family of output drivers are made with a high-speed Schottky process to
interface between low-level control functions and high-power switching devices particularly power MOSFET's. These devices implement three generalized functions as
outl ined below:

• 40nsec Rise and Fall into I000pF
• Parallel or Push-Pull Operation
• Single-Ended to Push-Pull Conversion
• High-Speed, Power MOSFET Compatible
• Low Cross-Conduction Current Spike
• Analog, Latched Shutdown
• Internal Deadband Inhibit Circuit
• Low Quiescent Current
• 5 to 40V Operation
• Thermal Shutdown Protection
• I6-Pin Dual-In-Line Package

First: They accept a single-ended, low-current digital input of either polarity and process
it to activate a pair of high-current, totem pole outputs which can source or sink up to
1.5A each.
Second: They provide an optional single-ended to push-pull conversion through the use
of an internal flip-flop driven by double-pulse-suppression logic. With the flip-flop
disabled, the outputs work in parallel for 3.0A capability.
Third: Protection functions are also included for pulse-by-pulse current limiting,
automatic deadband control, and thermal shutdown.
..
These devices are available in a two-watt plastic "Qat:-YrinJrDIPfor\operation over a 0°
to + lO°C temperature range and, with reduced p~r, inal1ermetially sealed cerdip
for -55°C to + 125°C operation.
.,;'
.•.•. ::,'.

TRUTH TABLE

OUT

,-,H. .. ;.

H

~·'K

L

H
L

l

t. -'.OUT = $V.a~N:i:,
=1I'l¥ 111]:

;qor

... L

;"H

.t
l

or

BLOCK DIAGRAM

B INHIBIT 1
INVERTING
INPUT

ANALOG
STOP 1-)

11/83

3-78

~UNITRDDE

UC1706
UC3706

ABSOLUTE MAXIMUM RATINGS

CONNECTION DIAGRAM

N·Pkg

J·Pkg

Supply Voltage, VIN ........................................ 40V ................. 40V
Collector Supply Voltage, Vc ................................ 40V ................. 40V
Output Current (Each Output, Source or Sink)
Steady·State ........................................ ±500mA ............ ±500mA
Peak Transient ......................................... ±1.5A ............... ±1.0A
Capacitive Discharge Energy ............................. 201lJ ................ 151lJ
Digital Inputs ............................................. 5.5V ................ 5.5V
Inhibit Inputs ............................................. 5.5V ................ 5.5V
Stop Inputs ................................................ VIN .................. VIN
Power Dissipation at TA = 25·C .............................. 2W .................. lW
Derate above 50·C ................................. 20mW/·C ........... 1OmW/"C
Power Dissipation at T (Leads/Case) = 25·C .................. 5W .................. 2W
Derate for Ground Lead Temperature above 25·C .... 40mW /·C ................... Derate for Case Temperature above 25·C ................... - ........... 16mW/"C
Operating Temperature Range ............................... -55·C to +125·C ...... .
Storage Temperature Range ................................. -65·C to +150·C ...... .
Load Temperature (Soldering, 10 Seconds) ......................... 300·C ........... .

DIL·16 (TOP VIEW)
J or N PACKAGE

Note: All four ground pins must be
connected to a common ground.

Note: All voltages are with respect to the four ground pins which must be connected together.
All currents are positive into, negative out of the specified terminal.

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications apply for TA = -55· to + 125·C forthe UC1706 and O·Cto
+70·C for the UC3706; VIN = Vc = 20V.)

TYP.

MAX.

UNITS

VIN Supply Current

VIN = 40V

8

10

rnA

Vc Supply Current

Vc = 40V, Outputs Low

4

5

rnA

Vc Leakage Current

VIN = 0, Vc = 40V

.05

0.1

rnA

0.8

V

-0.6

-1.0

rnA

.05

PARAMETER

TEST CONDITIONS

MIN.

Digital Input Low Level
Digital Input High Level

V

2.2

Input Current

VI = 0

Input Leakage

VI =5V

0.1

rnA

Output High Sat., Vc-Vo

10 = -50mA

2.0

V

Output High Sat., Vc-Vo

10 = -500mA

2.5

V

Output Low Sat., Vo

10 = 50mA

0.4

V

Output Low Sat., Vo

10 = 500mA

2.5

V

Inhibit Threshold

VREF = 0.5V

0.4

0.6

V

Inhibit Threshold

VREF = 3.5V

3.3

3.7

V

Inhibit Input Current

VREF = 0

-20

IlA

Analog Threshold

VCM = 0 to 15V

130

150

mV

Input Bias Current

VCM = 0

-10

-20

IlA

-10
100

155

Thermal Shutdown

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3-79

·C

PRINTED IN U.S.A

•

UC1706
UC3706

TYPICAL SWITCHING CHARACTERISTICS (VIN = Vc = 20V, TA = 25°C. Delays measured 50% in to 50% out.)
TEST CONDITIONS
PARAMETER
OUTPUT CL=
From Inv. Input to Output:

UNITS

open

1.0

2.2

nF

Rise Time Delay

110

130

140

ns

10% to 90% Rise

20

40

60

ns

Fall Time Delay

80

90

110

ns

90% to 10% Fall

25

30

50

ns

Rise Time Delay

120

130

140

ns

10% to 90% Rise

20

40

60

ns

Fall Time Delay

100

120

130

ns

90% to 10% Fall

25

30

50

ns

From N.!. Input to Output:

Vc Cross-Conduction
Current Spike Duration
Inhibit Delay
Analog Shutdown Delay

Output Rise

25

ns

Output Fall

0

ns

250

ns

180

ns

Inhibit Ref. = IV
Inhibit = 0.5 to 1.5V
Stop (+) Ref. = 0
Stop (-) Input = 0 to 0.5V

CIRCUIT DESCRIPTION
Outputs
The totem-pole outputs have been designed to minimize crossconduction current spikes while maximizing fast, high-current
rise and fall times. Current limiting can be done externally either
at the outputs or at the common Vc pin. The output diodes
included have slow recovery and should be shunted with highspeed external diodes when driving high-frequency inductive
loads.

on until the other has turned-off. The threshold is determined
by the voltage on pin 15 which can be set from 0.5 to 3.5V. When
this circuit is not used, ground pin 15 and leave 1 and 16 open.

Analog Shutdown
This circuit is included to get a latched shutdown as close to the
outputs as possible, from a time standpoint. With an internal
130mV threshold, this comparator has a common-mode range
from ground to (VIN - 3V). When not used, both inputs should be
grounded. The time required for this circuit to latch is inversely
proportional to the amount of overdrive but reaches a minimum of
180nsec. As with the flip-flop, an input off-time of at least 200nsec
is require'd to reset the latch between pulses.

Flip/Flop
Grounding pin 7 activates the internal flip-floptoalternatethetwo
outputs. With pin 7 open, the two outputs operate simultaneously
and can be paralleled for higher current operation. Since the
flip-flop is triggered by the digital input, an off-time of at least
200nsec must be provided to allow the flip/flop to change states.
Note that the circuit logic is configured such that the "OFF" state is
defined as the outputs low.

Supply Voltage
With an internal 5V regulator, this circuit is optimized for use with
a 7 to 40V supply; however, with some slight response time degradation, it can also be driven from 5V.when VIN is low, the entire
circuit is disabled and no current is drawn from Vc. When combined with a UC1840 PWM, the Driver Bias switch can be used to
supply VIN to the UC1706. VIN switching should be fast as if Vc is
high, undefined operation of the outputs may occur with VIN less
than 5V.

Digital Inputs
With both an inverting and non-inverting input available, either
active-high or active-low signals may be acce'pted. These are true
TTL compatible inputs - the threshold is approxi mately 1.2V with
no hysteresis; and external pull-up resistors are not required.
Inhibit Circuit
Although it may have other uses, this circuit is included to eliminate the need for dead band control when driving relatively slow
bipolar power transistors. A diode from each inhibit input to the
opposite power switch collector wi II keep one output from turning-

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Thermal Considerations
Should the chip temperature reach approximately 155°C, a parallel, non-inverting input is activated driving both outputs to the low
state.

3-80

PRINTED IN U.S.A

-ir-c

"''''z
xX --i

SIMPLIFIED SCHEMATIC DIAGRAM

-z",
~G")o

.8d~
~.?!n

~~g

ANALOG
NON-INV_
INPUT

~~~

'-'"

ANALOG
INVERT
INPUT
L-

~

~~~

r-'o

~~~

+Vw

!~~
~9~

..

co'"

",

';'1»

~'"

~~
o

FLI
AC'

~~P
HE

eW

~

rl-

~

~

~

w
Co
......

DIGIT,
NONINPU

2

3

>---j(}-

~

r1~~ I~ ~r1lfl

")

I

,-,C,r

-

lATE

:&-

A;

"'T

"

~~

,

")

I

DIGI
INVE
INPU

'~~

t

OUl

v~y~~
-

t

120llA 300IlA 120llA

~~

")

c.\3
GND
SUB

+

.~

rh-:A
INHIBIT

>

i<-j-

'Y'

>----j(}

~~~~r

~
REF

~

'·(f~

I

~

~ ~'

IV

E

IV

OUl
"I
1

T

~

B
INHIBIT

cc

nn
w ....

"0 0"
0> 0>

I

LINEAR INTEGRATED CIRCUITS

UC1717
UC3717

Stepper Motor Drive Circuit
FEATURES
• Half-step and full-step capability
• Bipolar constant current motor drive
• Built-in fast recovery Schottky
commutating diodes
• Wide range of current control 5-1000mA
• Wide voltage range 1O-45V
• Designed for unregulated motor supply
voltage
• Current levels can be selected in steps or
varied continuously
• Thermal overload protection

DESCRIPTION
The UC3717 has been designed to control and drive the current in one winding of a
bipolar stepper motor. The circuit consists of an LS·TTL·compatible logic input, a
current sensor, a monostable and an output stage with built· in protection diodes. Two
UC3717s and a few external components form a complete control and drive unit for
LS-TTL or micro-processor controlled stepper motor systems.
The UCl717 is characterized for operation overthe full military temperature range of-55·C
to + 125·C, while the UC3717 is characterized for O·C to +70·C.

ABSOLUTE MAXIMUM RATINGS (Note 1)
Voltage
Logic Supply, Vee ............................................................. 7V
Output Supply, Vm ........................................................... 45V
Input Voltage
Logic Inputs (Pins 7, 8,9) ..................................................... 6V
Analog Input (Pin 10) .........................................................Vee
Reference Input (Pin 11) ..................................................... 15V
Input Current
Logic Inputs (Pins 7, 8, 9) ................................................. -10mA
Analog Inputs (Pins 10, 11) ................................................ -10mA
Output Current (Pins 1,15) ...................................................... ±lA
Junction Temperature, TI .................................................... +150·C
Thermal Resistance, Junction to Ambient (NE Package) ............... , ...... , 45·C/W
Thermal Resistance, Junction to Case (NE Package) .......................... 11 ·C/W
Thermal Resistance, Junction to Ambient (J Package) ....................... 100·C/W
Thermal Resistance, Junction to Case (J Package) ............................ 60·C/W
Storage Temperature Range, Ts ..................................... -55·C to +150·C

CONNECTION DIAGRAM
DIL·16 (TOP VIEW)

J or NE PACKAGE

Note: 1. All voltages are with respect to ground, Pins 4, 5, 12, 13.

Currents are positive into, negative out of the specified terminal.

BLOCK DIAGRAM

CURRENT

TIMING

3·82

EMITTERS

~UNITRODE

UCl717
UC3717
5.0

RECOMMENDED OPERATING CONDITIONS
MIN.

TYP.

Supply Voltage, Vee

4.75

5

5.25

V

Supply Voltage, Vm

10

40

V

Output Current, 1m

20

800

mA

Rise Time Logic Inputs, tr

2

Fall Time Logic Inputs, t,

2

iJS
ps

PARAMETER

Ambient Temperature, t.
UCl717
UC3717

MAX. UNITS

~
z

0

~
en

3.0

'"~

2.0

.......

"

'"
15
OJ

12

-55
0

125
70

•

4.0

I

'"..
~

°C

'c

~

.

~

1.0

i:::::=-

'"""

~

~"'J\<

~s,
'~iI'

~w

0

o

--

"' ....

"' ....

~-.:-150

100

50

AMBIENT TEMPERATURE - ('C)

Figure 1.

ELECTRICAL CHARACTERISTICS (Over recommended operating conditions unless otherwise stated)
PARAMETER

TEST
CONDITIONS

MIN.

TYP.

Supply Current, Icc
High-Level Input Voltage, Pins 7, 8, 9

UNITS

25

mA
V

2.0

Low-Level Input Voltage, Pins 7, 8, 9
High-Level Input Current, Pins 7, 8, 9

V, = 2.4V

Low-Level Input Current, Pins 7, 8, 9

V, = 0.4V

10 = 1
I, = 0

0.8

V

20

pA

-0.4

10 = 0
I I, = 0
Comparator Threshold Voltage

MAX.

VR = 5.0V

mA

390

420

440

230

250

270

mV

65

80

90

mV

mV

r--10 = 0
I, = 1

20

pA

Output Leakage Current

10 = 1
I, = 1
TA =+25'C

100

pA

Total Saturation Voltage Drop

1m = 500mA

4.0

V

-20

Comparator Input Current

Total Power Dissipation

1m = 500mA,
f. = 30kHz

1.4

2.1

W

1m = 800mA,
f. = 30kHz

2.9

3.1

W

30

35

ps

1.6

2.0

ps

+180

°C

toFF

See Figure 5 and 6
Vm = lOV
tON;;;; 5ps

Turn Off Delay, td

See Figure 5 and 6
TA = +25°C;
dVc/dt;;;; 50mV/ps

Cut Off Time,

Thermal Shutdown Junction Temperature

UNITRODE CORPORATION' 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

25

+160

3-83

PRINTED IN U.S.A

UC1717
UC3717

TA = +25°C

I--"

-

,.-

0.1

,./

TA = +25°C

V

-01

0.8

0.5

-

0.8

05
OUTPUT CURRENT (A)

OUTPUT CURRENT (A)

Figure 3. Typical Sink Saturation Voltage vs Output Current

Figure 2. Typical Source Saturation Voltage vs Output Current

CHOPPING FREQUENCY = --:-Io-,~+':-Io-,,-

TA = +25°C

o",'AouRta-

II

B
VOLTAGE

(PIN 1, 15)

J

_

to"

.

11

0------_-

....

, ,'----------'
I I

/

I

I

td

-It-

/

I I

/

"

EMITTER

,/

VOLTAGE
(PIN 16)

V"
0.2

~

".,.,.

0.4

0.6

0.8

OUTPUT CURRENT (A)

Figure 5. Connections and Component Values as in Figure 6

Figure 4. Typical Power Losses vs Output Current

FUNCTIONAL DESCRIPTION

coupled with a fixed time delay assures noise immunity and
eliminates cross conduction in the output stage during phase
changes. A low level on the phase input will turn Q2 on and enable
Q3 while a high level will turn Q1 on and enable Q4. (See Figure 7).

The UC3717 drive circuit shown in the block diagram includes the
following functions.
(1) Phase Logic and H·Bridge Output Stage
(2) Voltage Divider with three Comparators for current control

Output Stage
The output stage consists of four Darlington transistors and
associated diodes connected in an H·Bridge configuration. The
diodes are needed to provide a current path when the transistors
are being switched. For fast recovery, Schottky diodes are used
across the source transistors. The Schottky diodes allow the
current to circulate through the winding while the sink transistors
are being switched off. The diodes across the sink transistors in
conjunction with the Schottkys provide the path for the decaying
current during phase reversal. (See Figure 7).

(3) Two Logic inputs for Digital current level select
(4) Monostable for off time generation
Input Logic
If any of the logic inputs are left open, the circuit will treat it as a
high level input.
Phase Input
The phase input terminal, pin 18, controls the direction of the
current through the motor winding. The Schmidt·Trigger input

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3·84

PRINTED IN U.S.A.

UCI717
UC3717

II

CURRENT

EMITTERS

TIMING

Rc
lk

RSENSE

R,

10

56k

C,
820pF

Cc

820pF

Figure 6.

PHASE INPUT

Ql. Q4

Q2.Q3

LOW

OFF

HIGH

ON

ON
OFF

DASHED LINES INDICATE
CURRENT DECAY PATHS

TABLE 1
10

11

CURRENT LEVEL

0

0

100%

1

0

60%

0

1

19%

1

1

CURRENT INHIBIT

Current Control
The voltage divider. comparators and monostable provide a
means for current sensing and control. The two bit input (I D• I,)
logic selects the desired comparator. The monostable controls
the off time and therefore the magnitude of the current decrease.
The time duration is determined by RT and CT connected to the
timing terminal (pin 2). The reference terminal (pin 11) provides
a means of continuously varying the current for situations
requiring half-stepping and micro·stepping. The relationship
between the logic input signals at pin 7 and 9 in reference to the
current level is shown in Table 1. The values of the different
current levels are determined by the reference voltage together
with the value of the external sense resistor R. (pin 16).
Figure 7. Simplified Schematic of Output Stage

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

3-85

PRINTED IN U.S.A

UCl717
UC3717

Single· Pulse Generator
The pulse generator is a monostable triggered on the positive
going edge of the comparator. Its output is high during the pulse
time and this pulse switches off the power feed to the motor
winding causing the current to decay. The time is determined by
the external timing components RT and CT as:
tOFF

slope of the current decay is steeper, and this is due to the higher
voltage build up across the winding. For better speed
performance of the stepping motor at half step mode, the phase
logic level should be changed the same time the current inhibit is
applied. A typical current wave form is shown in Figure 8.

=0.69 RTCT

If a new trigger signal should occur during tOFF, it is ignored.

Overload Protection
The circuit is equipped with a thermal shutdown function, which
will limit the junction temperature by reducing the output current.
It should be noted however, that a short circuit of the output is not
permitted.

Operation
When the voltage is applied across the motor winding the current
rises linearly and appears across the external sense resistor as an
analog voltage. This voltage is fed through a low·pass filter Re, Ce
to the the voltage comparator (pin 10). At the momentthe voltage
rises beyond the comparator threshold voltage the monostable is
triggered and its output turns off the sink transistors. The current
then circulates through the source transistor and the appropriate
Schottky diode. After the one shot has timed out, the sink
transistor is turned on again and the procedure repeated until a
current reverse command is given. By reversing the logic level of
the phase input (pin 8), both active transistors are being turned
off and the opposite pair turned on. When this happens the
current must first decay to zero before it can reverse. The current
path then provided is through the two diodes and the powersupply. Refer to Figure 7. It should be noticed at this time that the
+5

PHASE A

8

Figure 8.
APPLICATIONS
A typical chopper drive for a two phase bipolar permanent magnet
or hybrid stepping motor is shown in Figure 9. The input can be
controlled by a microprocessor, TTL, LS or CMOS logic.

+5

+40

STEPPI NG MOTOR

Ph

G

UC3717

loA

Ao 15

10
16

4,5

12,13

-=+5

+5

+40
3,14

PHASE B

8 Ph

h

I,B
loB

9

UC3717

10

Ao
16

15

4,5
12,13

Figure 9.
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3·86

PRINTED IN U.S A.

UCl717
UC3717
The timing diagram in Figure 10 shows the required signal input
for a two phase, full step, stepping sequence. Figure 11 shows a
one phase, full step, stepping sequence, commonly referred toas
wave drive. Figure 12 shows the required input signal for a one
phase-two phase stepping sequence called half-stepping.

The schematic of Figure 14 shows a pulse to half step circuit
generating the signal shown in Figure 12. Care has been taken to
change the phase signal the same time the current inhibit is
applied. This will allow the current to decay faster and therefore
enhance the motor performance at higher step rates.

The circuit of Figure 13 provides the signal shown in Figure 10,
and in conjunction with the circuit shown in Figure 9, will
implement a pulse-to-step two phase, full step, bidirectional
motor drive.

The UC3717 can also be used to drive an external high power
output stage such as the Unitrode PIC900 hybrid circuit in an 18Pin dual-in-line package. The 5A output of the PIC900 can be
controlled with as little as 5mA base drive. Using the UC3717 to
drive the PIC900 provides a uniquely packaged state-of-the-art
high power stepper motor control and drive. See Figure 15.

4

PHASE A

II-____~

PHASE B

--~-..,

----~.~REV

----...,.~FWD

Figure 10. Phase Input Signal for Two Phase Full Step Drive (4 Step Sequence)

4

4

,'--_---oJ
I

I

PHASEA

IL...____

..I

I
PHASE B - - - - . . ,

10,1, A
10. h B

-----<.~

----~~~FWD

REV

Figure 11. Phase and Current-Inhibit Signal for Wave Drive (4 Step Sequence)

I 1 I2

1 314151617181

I
I

PHASE A - - - - . . ,

~

I
PHASE B - - - , - - - - . . ,

r----'V
III

I•• " A
1.. 1, B

n

_-..1-......JnL-_---In. . ___1l..v

_---'n. . _---'n

n

r-Lv

~....

----~.~REV

- - - - -•• FWD

Figure 12. Phase and Current·lnhibit Signal for Half.Stepping (8 Step Sequence)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3·87

PRINTED IN USA.

II

UC1717
UC3717
DIRECTION
REV/FWD

I

I

I

PR
D-D

112

Q

[>-0

I
PR
Q

PHASE B

112

7474

.--

PHASE A

1K

7474

CK

Q-

r - CK

ClR

ClR

1

I

CLOCK

Figure 13. Full Step, Bidirectional Two Phase Drive Logic
+5V
~

~
I,A

DIRECTION
SWITCH

,..---------4--10 A

9 So

iI

10 S,
11

ClK
ClR

3 A

...
.......

PHASE A

~

4 B

5 C
6 0

PHASE B

QD 12
R
2

L-_ _ _ _ _ _ _ _ _- .___ I, B

-=

10 B

Figure 14. Half Step, Bidirectional Drive Logic
CONSIDERATION
Half·Stepping
In the half step sequence the power input to the motor alternates
between one or two phases being energized. In a two phase motor
the electrical phase shift between the windings is 90 degrees. The
torque developed is the vector sum of the two windings energized.
Therefore when only one winding is energized the torque of the
motor is reduced by approximately 30%. This causes a torque
ripple and if it is necessary to compensate for this, the VA input
can be used to boost the current of the single energized winding.

Iron Core Losses
Some motors, especially the Tin·Can type, exhibit high iron losses
mostly due to eddy currents which rise in an exponental matter as
the frequency or step rate is increased. The power losses can not
be calculated by 12R where I is the chopping current level and R
the DC resistance ofthe coil. Actual measurements indicate the
effective resistance may be many times larger. Therefore, for
100% duty cycle the current must be limited to a value which will
not overheat the motor. This may not be necessary for lower duty
cycle operation.

Ramping
Every drive system has inertia and must be considered in the drive
scheme. The rotor and load inertia plays a big role at higher
speeds. Unlike the DC motor the stepping motor is a synchronous
motor and does not change its speed due to load variations.
Examining typical stepping motors torque vs. speed curves
indicates a sharp torque drop off for the start-stop without error
curve, even with a constant current drive. The reason for this is
that the torque requirements increase by the square of the speed
change, and the power need increases by the cube of the speed
change. As it can be seen, for good motor performance controlled
acceleration and deceleration should be considered.·

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6S40
TWX (710) 326-6S09 • TELEX 95-1064

Interference
Electrical noise generated by the chopping action can cause
interference problems, particularly in the vicinity of magnetic
storage media. With this in mind, printed circuit layouts, wire runs
and decoupling must be considered. 0.01 to O.lpF ceramic
capacitors for high frequency bypass located near the drive
package across V+ and ground might be very helpful. The
connection and ground leads of the current sensing components
should be kept as short as possible.
Ordering Information
UNITRODE TYPE NUMBER
UC3717NE - 16 Pin Dual-in-line (DIL) "Bat Wing" Package
UC3717J - 16 Pin Dual-in-line Ceramic Package
UCI717J - 16 Pin Dual·in-line Ceramic Package

3-88

PRINTED IN U.S ....

-ire

""'z

X x--i
-z.,
~G)O
O-io

-0",

~~o

~~g

~2~
"~.,

-i .... "

rn w ::::!

roo
~~z
r"

~~~

fl

~5~

mID

m",

,;"",

Zl.,
g~

o

+5V

PIC900

+5V
6

3,14

PHASE~

1~

r---1
1

Bo~

I
1

I
UC3717

I.

•

Ao~

Ii.
161

___ -,

1

1
1
13 1

1

1
14

14,5

12,13

16

w

do
\0

I

14

10

8

1
1
1
1

n

1

_______ J1

1 ill 12
8

117

1

1

Figure 15. UC3717 with PIC900 Power Amplifier

.

'"~

o

cc

z

00

w .....
..........
..........
..........

c:

'"~

II

LINEAR INTEGRATED CIRCUITS

UC1834
UC2834
UC3834

High Efficiency Linear Regulator
FEATURES

DESCRIPTION

• Minimum VIN - VOUT less than O.5V at 5A
load with external pass device
• Equally usable for either positive or
negative regu lator design

The UC1834 family of integrated circuits is optimized for the design of low input-output
differential linear regulators. A high gain amplifier and 200mA sink or source drive
outputs facilitate high output current designs which use an external pass device. With
both positive and negative precision references, either polarity of regulator can be
implemented. A current sense amplifier with a low, adjustable, threshold can be used to
sense and limit currents in either the positive or negative supply lines.

• Adjustable low threshold current sense
amplifier
• Under and over-voltage fault alert with
programmable delay
• Over-voltage fault latch with 100mA
crowbar drive output

In addition, this series of parts has a fault monitoring circuit which senses both under
and over-voltage fault conditions. After a user defined delay for transient rejection, this
circuitry provides a fault alert output for either fault condition. In the over-voltage case,
a 100mA crowbar output is activated. An over-voltage latch will maintain the crowbar
output and can be used to shutdown the driver outputs. System control to the device
can be accommodated at a single input which will act as both a supply reset and
remote shutdown terminal. These die are protected against excessive power dissipation
by an internal thermal shutdown function.

R~TINGS (Note 1)
Input Supply Voltage, VIN •• •• • •• • • • • • • • • • • • • • • • • • • •• • • • • • • • • • • • • • • • • • • • • • •• 40V
Driver Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 400mA
Driver Source to Sink Voltage ............................................... 40V
Crowbar Current ....................................................... -200mA
+ 1.5V Reference Output Current ......................................... -10mA
Fault Alert Voltage ................................,.......................... 40V
Fault Alert Current ....................................................... 15mA
Error Amplifier Inputs ...................................•.......... -O.5V to 35V
Current Sense Inputs ............................................... -O.5V to 40V
O.V. Latch Output Voltage ........................................... -O.5V to 40V
O.V. Latch Output Current ................................................ 15mA
Power Dissipation at TA = 25°C ......................................... 1000mW
Derate at lOmW /~C above TA =50°C
Power Dissipation at Tc =25°C ......................................... 2000mW
Derate at 16mWrC above Tc = 25°C
Thermal Resistance, Junction to Ambient ............................... 100°C/W
Thermal Resistance, Junction to Case ................................... 60°C/W
Operating Junction Temperature ................................ -55°C to +150°C
Storage Temperature ........................................... -65°C to +150°C
Lead Temperature (soldering, 10 seconds) ................................. 300°C
Note: 1. Voltages are reference to VIN-, Pin 5.

ABSOLUTE MAXIMUM

CONNECTION DIAGRAM
DIL-16 (TOP VIEW)

J or N PACKAGE

16 CROWBAR GATE
-20V REF. 2

15

gJT~6t5~ESET

+1.5V REF. 3

14

~~~.f6~~~TIONI

THRESH25? 4

13 DRIVER SOURCE

Currents are positive into, negative out of the specified terminals.

BLOCK DIAGRAM

' - - -......-j 13 DRIVER SOURCE

+1.5V REFERENCE 3
-2,OV REFERENCE

'--~-----I15 O.V. LATCH & RESET

2

+ - - - - - - - 1 - + - - - - - - - - - - 1 1 4 COMPENSATION/SHUTDOWN

SENSE+ 7
THRESHOLD ADJUST 4 1---....1

7/83

L.::=';=~

3-90

~UNITRDDE

UC1834
UC2834
UC3834

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications apply for TA = -55°C to + 125°C for the UC1834;
-25°C to +85°C for the UC2834' and O°C to +70°C for the UC3834' Y,N+ = 15V Y,N- = OV)

PARAMETER

UC1834/UC2834

TEST CONDITIONS

MIN.

Standby Supply Current

TYP.

MAX.

5.5

7

1.5

1.515

UC3834
MIN.

TYP.

MAX.

5.5

10

1.5

1.53

UNITS
mA

+ 1.5 Volt Reference
T, = 25°C
Output Voltage
TJIMINI

~

1.485

T

J ::;

1.47

TIIMAXI

1.53

1.47
1.455

1.545

V

Line Regulation

V,/ = 5 to 35V

1

10

1

15

mV

Load Regulation

lOUT = 0 to 2mA

1

10

1

15

mV

-2

1.94

V

-2.0 Volt Reference (Note 2)
Output Voltage
+
(Referenced to Y'N )

T, = 25°C

Line Regulation

Y,N + = 5 to 35V

TJIMINI

:S: TJ ::;

2.04

-2

2.06

TjlMAXI

1.5

Output Impedance

1.96

2.06

1.94

2.08

15

1.92
1.5

2.3

20

mV
kO

2.3

Error Amplifier Section
Input Offset Voltage

VCM = 1.5V

1

6

1

10

mV

Input Bias Current

VCM = 1.5V

-1

-4

-1

-8

/1 A

Input Offset Current

VCM = l.5V

0.1

1

0.1

2

/1 A

Small Signal Open Loop Gain

Output @ Pin 14, Pin 12 = V,/
Pin 13, 200 to V,N-

CMRR

VCM = 0.5 to 33V, Y,N+ = 35V

60

80

PSRR

Y,N + = 5 to 35V, VCM = l.5V

70

100

200

350

200

350

50

65

65

dB

60

80

dB

70

100

dB

50

Driver Section
Maximum Output Current
Saturation Voltage

lout = 100mA

Output Leakage Current

Pin 12 = 35V, Pin 13 = V,N-, Pin 14 = Y,N

-

Shutdown Input Voltage
at Pin 14

lOUT ~ 100/1A, Pin 13 = Y,N -, Pin 12 = Y,N +

Shutdown Input Current
at Pin 14

Pin 14 = V'N-, Pin 12 = V,N +,
lOUT ~ 100/1A, Pin 13 = Y'N

0.4

1.2

0.5

1.5

V

0.1

50

0.1

50

/1 A

0.4

1
-100

Thermal Shutdown (Note 3)

mA

0.5

1
-100

-150

165

V
-150

165

/1 A
°C

Fault Amplifier Section
Under- and Over- Voltage
Fault Threshold

VCM = l.5V, @ E/ A Inputs

Common Mode Sensitivity
Supply Sensitivity

120

-1.0

%/V

-0.5

-1.2

%/V

30

45

60

mS//1F

2

5

-0.5
30

45

60

2

5

loUT =lmA

0.2
2

Crowbar Gate Current
Y,N+ = 35V, Pin 16 = V,N-

4

0.2
2

1.3

0.3

0.4

0.6

-100

-175
-0.5

110

0.5

1.0

lOUT = 1mA

O.V. Latch Output
Reset Voltage

Crowba r Gate
Leakage Current

-0.4

-1.0

-0.4

VCM =1.5V, Y'N + = 5 to 35V

O.V. Latch Output Current
O.V. Latch Saturation Voltage

-0.8

V,N+ = 35V, VCM = l.5 to 33V

Fault Delay

Fault Alert Saturation Voltage

190

180

Fault Alert Output Current

mV

150

150

-50

mA
0.5

V
mA

4
1.0

1.3

V

0.3

0.4

0.6

V

-100

-175
-0.5

rnA
-50

/1 A

Note: 2. When using both the 1.5V and -2.0V references the current out of Pin 3 should be balanced by an equivalent current into Pin 2. The -2.0V
output will change -2.3mV per pA of inbalance.
3. Thermal shutdown turns off the driver. If Pin 15 (O.V. Latch Output) is tied to Pin 14 (Compensation/Shutdown), the O.V. Latch will be reset.

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

3-91

PRINTED IN U S.A

•

UC1834
UC2834
UC3834

=-55°C to + 125°C for the UC1834;
-25°C to +85°C for the UC2834' and O°C to + 70°C for the UC3834' Y,N + = 15V Y,N - = OV )

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications apply for TA

PARAMETER

I

TEST CONDITIONS

UC1834/UC2834

UC3834

UNITS

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

Pin 4 Open, VCM

130

150

170

120

150

180

Pin 4

40

50

60

30

50

70

-0.1

-0.3

-0.1

-0.5

%/V

-2

-10

-2

-10

p.A

100

200

100

200

-100

-200

-100

-200

Current Sense Amplifier Section

=Y,N+ or V,N=0.5V, VCM =Y,N+ or V,NPin 4 Open, VCM =Y,N -, Y,N + = 5 to 35V
Pin 4 =0.5V
VCM =V,N+
VCM =Y,N

Threshold Voltage
Threshold Supply Sensitivity
Adj. Input Current
Sense Input Bias Current

Current Sense Threshold Adjustment

mV

p.A

Current Limiting Knee Characteristic

200r-----~------~------._----_,

200

>

E

>
E
I 150

I
=>0.>z=>
-0.

I-----If----I---'

'3o

">
«z

I

[fl

i''"

100

'"-

"'0
"'",
>-0

"",
«'"

>-

~tt
oS

Z

=>

80

«z
",,,,

15

40

t;;

o

If'

~

~

o

o
10

>1 5V OR OPEN

1.5

VOLTAGE AT THRESHOLD ADJUST PIN (PIN 4) -

-10
-7.5
-5.0
-2.5
CURRENT SENSE
THRESHOLD
DIFFERENTIAL VOLTAGE AT CURRENT SENSE INPUTS - mV
(REFERENCED TO SENSE - INPUT)

v

Error Amplilier Gain and Phase
Frequency Response

Current Sense Amplifier Gain and Phase
Frequency Response

80r----.-----,-----r----~---_,

100r-----.-----,-----r----~----_,

OUTPUT AT PIN 14
WITH 820pF TO GND.

OUTPUT AT PIN 14
WITH 820pF TO GND.
T) = 25°C

T) = 25°C

60r---~~-~--~--_+--~

80r---~~-1_--~--_+--~

~

;j

'"OJ

U
UJ
0

OJ

&]

40

0

I

I

;;:

;;:

z

"
"~

UJ

./

/

J

"I
'"I

60

z

"
"~

20

UJ

0

40

90

"8

i'g

'"



>
20r----+---1_--~--_+~~~

-20~

10

___

~

100

__

~

1K

___

~

____

10K

~

____

lOOK

~

O~

10

1M

FREQUENCY - HERTZ

UN/TRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

__

~

____

100

~

1K

____L __ _
10K

~

____

lOOK

180

~

1M

FREQUENCY - HERTZ

3-92

PRINTED IN U S.A

UC1834
UC2834
UC3834
APPLICATION INFORMATION
Foldback Current Limiting

Setting The Threshold Adjust Voltage (V....)

II

UC1834

20V
VOUT

1.5V

R,

ilMAX(Typical)

¥~~~§~JLD _"---"'"-_-' = O.I(V.",,)_

¢8[¥;JE (V

ADJ

RSENSE

)

FOR: R, + R2»

V"OJ

(R,

= 1.5V. _ _R_,_

R,

(V,: - VO"') R,
+

~

R2

R3=~.(R,+R2)

R2) RSENSE

RSENSE. VADJ

+

'TO MAINTAIN -2.0V OUTPUT
1.5

1.5V,

R,' = R,

TYPICAL APPLICATIONS
Both the current sense and error amplifiers
on the UC1834 are transconductance type
amplifiers. As a result, their voltage gain is a
direct function of the load impedence at
their shared output pin, Pin 14. Their small
signal voltage gain as a function of load and
frequency is nominally given by;
Av

_ Zc(f)
7000 and Av

EjA -

for:

5-10 AMP Positive Regulator
~~~yo-~~~----------------------~

~_,--oVOUT

_ lL(f)
700

C S.fA -

f:O; 500kHz and IlL(f)1

:0;

1MO,

where:
Av = small signal voltage gain to Pin 14,
lL(f) = load impedence at Pin 14.

The UC1834 fault delay circuitry prevents
the fault outputs from responding to
transient fault conditions. The delay reset
latch insures that the full, user defined,
delay passes before an over-voltage fault
response occurs. This prevents
unnecessary crowbar, or latched-off
conditions, from occurring following sharp
under-voltage to over-voltage transients.
The crowbar output on the UC1834 is
activated following a sustained over-volatge
condition. The crowbar output remains high
as long as the fault condition persists, or, as
long as the over-voltage latch is set. The
latch is set with an over-voltage fault if the
voltage at Pin 15 is above the latch reset
threshold, typically O.4V. When the latch is
set, its Q output will pull Pin 15 low through a
series diode. As long as a nominal pull-up
load exists, the series diode prevents Qfrom
pulling Pin 15 below the reset threshold.
However, Pin 15 is pulled low enough to
disable the driver outputs if Pins 15 and 14
are tied together. With Pin 15 and 14
common, the regulator will latch off in
response to an over-voltage fault. If the fault
condition is cleared and Pins 14 and 15 are
momentarily pulled below the latch reset
threshold, the driver outputs are re-enabled.
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710l. 326-6509 • TELEX 95-1064

REMOTE

t---+----I---~===~~t:----o ~~~:fOWNI
GROUND

0-+-..-+----15\

5-10 AMP Negative Regulator
GROUND

0-..--....-------------------------------------....-----.-,

I--+-t--+-+---o

REMOTE

SHUTDOWNI
RESET

1lo1-+-+--+-+-~~~~ORING

s0~~0-~~~----------------------------------~--~

3-93

PRINTED IN U.S.A.

LINEAR INTEGRATED CIRCUITS

UC1840
UC2840
UC3840

Programmable, Off-Line, PWM Controller
FEATURES

DESCRIPTION

• All control, driving, monitoring, and
protection functions included

Although containing most of the features required by all types of switching power supply
controllers, the UC1840 family has been optimized for highly-efficient boot-strapped
'primary-side operation in forward or flyback power converters. Two important features
for this mode are a starting circuit which requires little current from the primary input
voltage and feed-forward control for constant volt-second operation over a wide input
voltage range.
In addition to startup and normal regulating PWM functions, these devices offer built-in
protection from over-voltage, under-voltage, and over-current fault conditions. This
monitoring circuitry contains the added features that any fault will initiate a complete
shutdown with provisions for either latch off or automatic restart. In the latch-off mode,
the controller may be started and stopped with external pulsed or steady-state
commands.
Other performance features of these devices include a 1% accurate reference, provision
for slow-turn-on and duty-cycle limiting, and high-speed pulse-by-pulse current limiting
in addition to current fault shutdown.
The UC1840's PWM output stage includes a latch to insure only a single pulse per period
and is designed to optimize the turn off of an external switching device by conducting
during the "OFF" time with a capability for both high peak current and low saturation
voltage. These devices are available in an 18-pin dual-in-line' plastic or ceramic package.
Th,e UC1840 is characterized for operation over the full military temperature' range of
-55°C to + 125°C. The UC2840 and UC3840 are designed for operation from -25°C to
+85°C and O°C to +70°C, respectively.

• Low-current, off-line start circuit
• Feed-forward line regulation over 4 to 1
input range
• PWM latch for single pulse per period
• Pulse-by-pulse current limiting plus
shutdown for over-current fault
• No start-up or shutdown transients
• Slow turn-on and maximum duty-cycle
clamp
• Shutdown upon over- or under-voltage
sensing
• Latch off or continuous retry after fault
• Remote, pulse-commandable start/stop
• PWM output switch usable to 1A peak
current
• 1% reference accuracy
• 500kHz operation
• 18-pin OIL package

BLOCK DIAGRAM

11

v,.
SENSE

10 RAMP

v,.

SUPPLY

DRIVER
BIAS
INV INPUT

PWM
OUTPUT

N,t INPUT
START/UV
5,QV REF

GROUND
SLOW
STARTI
DUTY CYCLE
CLAMP

CUR LIMIT
THRESHOLD

4OOm'

Note: Positive true logic, latch outputs high with set, reset has priority,

11/83

3-94

~UNITRDDE

UC1840
UC2840
UC3840
ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage, +VIN (Pin 15)
Voltage Driven ......................................... +32V
Current Driven, 100mA maximum ............... Self·limiting
PWM Output Voltage (Pin 12) ............................... 40V
PWM Output Current, Steady-State (Pin 12) ............... 400mA
PWM Output Peak Energy Discharge .................. 20pJouies
Driver Bias Current (Pin 14) ........................... -200mA
Reference Output Current (Pin 16) ....................... -50mA
Slow-Start Sink Current (Pin 8) ............................ 20mA
V,N Sense Current (Pin 11) .... .. . .. .... .. .. .. .. .. .. .. ... lOmA
Current Limit Inputs (Pins 6 & 7) .................. -0.5 to +5.5V
Comparator Inputs (Pins 2, 3, 4, 5, 17, 18) ......... -0.3 to +32V
Power Dissipation at TA = 25·C ........................ 1000mW
Derate at 10 mW;oC for TA above 50·C
Power Dissipation at Tc =25·C ........................ 2000mW
Derate at 16 mW;oC for Tc above 25·C
Thermal Resistance, Junction to Ambient .............. 100·C/W
Thermal Resistance, Junction to Case ................... 60·C/W
Operating Junction Temperature ............... -55·C to + 150·C
Storage Temperature Range ...........•....... -65·C to +150·C
Lead Temperature (Soldering, 10 sec) ................... +3oo·C
Notes: 1. All voltages are with respect to ground, Pin 13.

CONNECTION DIAGRAM
UCl840
UC2840
UC3840

DIL-18 (TOP VIEW)

J or N PACKAGE

COMPENSATION

~

NON·INV INPUT

START/UV

2

17 INVERTING INPUT

OV SENSE

3

16 5.0V REF

STOP

4

15 + VIN SUPPLY

RESET

5

14 DRIVER BIAS
13 GROUND

CURRENT THRESHOLD 6

12 PWM OUTPUT

7

CURRENT SENSE
SLOW-START

8

11

RT/CT

9

10 RAMP

VIN

SENSE

Currents are positive-into, negative-out of the specified terminal.

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications apply for TA = -55·C to + 125·C for the UC1840,
-25·C to +85·C for the UC2840, and O·C to 70·C for the UC3840; V,N = 20V, RT = 20k,
CT = .001mfd, CR = .001mfd, Current Limit Threshold = 200mV)

PARAMETER

UCl840
UC2840

TEST CONDITIONS

UC3840
UNITS

MIN. TYP. MAX. MIN. TYP. MAX.
Power Inputs
Start-Up Current

V,N = 30V, Pin 2 = 2.5V, TJ = 25·C

Start-Up Current T.C. *

V,N = 30V, Pin 2 = 2.5V

Operati ng Cu rrent

V,N = 30V, Pin 2 = 3.5V

5

10

15

5

Supply OV Clamp

V,N = 20mA

33

40

45

33

4.95

4.9

4

5.5

4

5.5

mA

-0.1

-0.2

-0.1

-0.2

%/·C

10

15

mA

40

48

V

Reference Section
Reference Voltage

TJ = 25·C

5.0

5.05

5.0

5.1

V

Line Regulation

V,N = 8 to 30V

10

15

10

20

mV

10

20

10

Load Regulation

IL = 0 to 20mA

Temperature Coefficient·

Over operating temperature range

Short Circuit Current

VREF = 0, TJ = 25·C

30

mV

±0.4

±0.4

mV;oC

-80

-100

-80 -100

50

53

0.5

1

mA

Oscillator
Nominal Frequency

TJ = 25·C

Voltage Stability

V'N = 8 to 30V

Temperature Coefficient·

Over operati ng temperature range

Maximum Frequency

RT = 2kn, CT = 330pF

47

45

50

55

0.5

1

%

±.08

%;oC

±.08
500

kHz

kHz

500

Ramp Generator
Ramp Current, Minimum

ISENSE = -10pA

Ramp Current, Maximum

ISENSE = LOmA

-11

Ramp Valley
Ramp Peak

Clamping Level

-0.9

-.95

0.3

0.5

3.9

4.2

-11

-14

-14

pA

-0.9

-.95

mA

0.7

0.3

0.5

0.7

V

4.5

3.9

4.2

4.5

V

·Guaranteed by design. Not 100% tested in production.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-95

PRINTED IN U.S A.

II

UC1840
UC2840
UC3840

=-55·C to + 125'C for the UC1840,
-25·C to +85'C for the UC2840, and O'C to 70·C for the UC3840; VIN = 20V, RT = 20k,
CT .001mfd, CR .001mfd, Current Limit Threshold 200m¥)

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications apply for TA

=

=

PARAMETER

=

UCl840
UC2840

TEST CONDITIONS

UC3840
UNITS

MIN. TYP. MAX. MIN. TYP. MAX.
Error Amplifier
Input Offset Voltage

VCM

=5.0V

Input Bias Current

0.5

5

2

10

mV

0.5

2

1

5

J1A

0.5

J1A

Input Offset Current

0.5

=1 to 3V

60

Open Loop Gain

AVo

Output Swi ng
(Max. Output::; Ramp Peak - 100mV)

Minimum Total Range

0.3

VCM

=1.5 to 5.5V
=8 to 30V
VCOMP =OV
TJ =25·C, AVOL =OdB
TJ =25'C, AVCL =OdB

70

80

70

80

VIN

40

50

40

50

CMRR
PSRR
Short Circuit Current
Gain Bandwidth'
Slew Rate·

66
3.5

-4
1

60

-4
1

0.8

dB
3.5

0.3

-10

2

66

V
dB
dB

-10

mA

2

MHz

0.8

VIJ1s

PWM Section
Continuous Duty Cycle Range'
(other than zero)

Minimum Total Continuous Range
Ramp Peak < 4.2V

Output Saturation

=20mA
lOUT =200mA
VOUT =40V

Output Saturation
Output Leakage
Comparator Delay·

5

lOUT

Pin 8 to Pin 12
TJ 25·C, RL 1kO

=

=

95

95

5

%

0.2

0.4

0.2

0.4

V

1.7

2.2

1.7

2.2

V

0.1

10

0.1

10

J1A

300

500

300

500

ns

3.0

3.2

Sequencing Functions
Comparator Thresholds

Pins 2, 3, 4, 5

Input Bias Current

=OV
Pin 2 =2.5V, TJ =25'C
Input V =20V
Ie =-50mA
Ve =OV
Is =2mA
Vs =4.5V

Start/UV Hysteresis Current
Input Leakage
Driver Bias Saturation Voltage, VIN - VOH
Driver Bias Leakage
Slow·Start Saturation
Slow· Start Leakage

2.8

Pins 3, 4, 5

180

3.0

3.2

-1.0

-3.0

200

220

0.1

10

2

2.8

V

-1.0 -3.0

J1A

200

230

J1A

0.1

10

pA

3

2

3

V

-0.1

-10

-0.1

-10

J1A

0.2

0.5

0.2

0.5

V

0.1

2.0

0.1

2.0

J1A

170

Current Control
Current Limit Offset
Current Shutdown Offset
Input Bias Current

370
Pin 7

=OV

5
430

-2

-5

-0.4

Common Mode Range'
Current Limit Delay'

0
400

TJ

=25·C, Pin 7 to 12, RL =1k

3.0
200

400

360

0

10

mV

400

440

mV

-2

-5

J1A

-0.4
200

3.0

V

400

ns

·Guaranteed by design. Not 100% tested ill production.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3·96

PRINTED IN

u.s

A.

UC1840
UC2840
UC3840

FUNCTIONAL DESCRIPTION
PWM CONTROL
1. Oscillator:

2. Ramp Generator:

•

Generates a fixed-frequency internal clock from an external RT and CT.
Kc
Frequency = RTCT where Kc is a first-order correction factor = 0.3 log (CT X 10").
dv
sense voltage
Develops a linear ramp with a slope defined externally by - - =
dt
RRCR
CR is normally selected :0:; CT and its value will have some effect upon valley voltage.
CR terminal can be used as an input port for current mode control.

3. Error Amplifier:

Conventional operational amplifier for closed-loop gain and phase compensation.
Low output impedance; unity-gain stable.

4. Reference Generator:

Precision 5.0V for internal and external usage to 50mA.
Tracking 3.0V reference for internal usage only with nominal accuracy of
40V clamp zener for chip OV protection, 100mA maximum current.

± 2%.

5. PWM Comparator:

Generates output pulse which starts at termination of clock pulse and ends when the ramp input
crosses the lowest of two positive inputs.

6. PWM Latch:

Terminates the PWM output pulse when set by inputs from either the PWM comparator, the pulseby-pulse current limit comparator, or the error latch. Resets with each internal clock pulse.

7. PWM Output Switch:

Transistor capable of sinking current to ground which is off during the PWM on-time and turns on
to terminate the power pulse. Current capacity is 400mA saturated with peak capacitance
discharge in excess of one amp.

SEQUENCING FUNCTIONS
1. Start/UV Sense:

This comparator performs three functionsWith an increasing voltage, it generates a turn-on signal at a start threshold.
With a decreasing voltage, it generates a UV fault signal at a lower level separated by a
200pA hysteresis current.
At the UV threshold, it also resets the Error Latch if the Reset Latch has been set.

2. Drive Switch:

Disables most of the chip to hold internal current consumption low, and Driver Bias OFF, until
input voltage reaches start threshold.

3. Driver Bias:

Supplies drive current to external power switch to provide turn-on bias.

4. Slow Start:

Clamps low to hold PWM OFF. Upon release, rises with rate controlled by RsCs for slow increase of
output pulse width.
Also used to clamp maximum duty cycle with divider Rs Roc.

5. Start Latch:

Keeps low input voltage at initial turn-on from being defined as a UV fault. Sets at start level to
monitor for UV fault.

6. Reset Latch:

When reset, this latch insures no reset signal to either Start or Error latches so that first fault will
lock the PWM off.
When set, this latch resets the Start and Error latches at the UV low threshold, allowing a restart.

I
I

I

PROTECTION FUNCTIONS
When set by momentary input, this latch insures immediate PWM shutdown and
1. Error Latch:
hold off until reset.
Inputs to Error Latch are:
a. UV low (after turn-on)
b. OV high
c. Stop low
d. Current Sense 400mV over threshold.
Error Latch resets at UV threshold if Reset Latch is set.
2. Current Limiting:

Differential input comparator terminates individual output pulses each time sense voltage rises
above threshold.
When sense voltage rises to 400mV above threshold, a shutdown signal is sent to Error Latch.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-97

PRINTED IN USA

UC1840
UC2840
UC3840

PWM Output Saturation Voltage

StartlUV Hysteresis Current

VIN =2QV
v.... ,= 2.5V

~

4~----~------t-----~------~----~
VIN = 20V

a 275

Low duty-cycle
pulse test.

E

e

250

i
,225
i

r--~p.1, ,
IlC\~1""''' 1~P\C"l CH,.R,.CTERISTIC

II>

.. ",,;/.O~\~

__U~,!4~~~ __

-_.:t---:tn---

l-

200

A-::: --..L--l--- uCis;biN-

a 175

iii
ffi

.!!~T~~"'

--UC3s40'MiN---

150 _IlC'i

Ii;
~ 125
-50

-25

50

25

75

100

125

JUNCTION TEMPER,.TURE - ('C)

OUTPUT SINK CURRENT - (rnA)

PWM Output Minimum Pulse Width

Oscillator Frequency

(Pulse width $oes to zero
below value Indicated.)

¥

200

.3
I

'>1

g
~

'"::>

10
5.0

:t:

50

b

3.0

'"

2.0

20

i.:
:IE
::>
:IE

1.0

i

~

S'

If

Z
iii

0.5
0.3
0.2
0.1

5

10

20

50

100

200

500

10

R, TIMING RESISTOR - (kO)

20

50

30

100

200

300

500

OSCILLATOR FREQUENCV - (k Hertz)

·Error Amplifier Open-Loop Gain and Phase

Shutdown Timing

80
5
VIN

60

'"

iii'

:s

40

z

~

'"

~

J20V

Pin 4

~1'\

20

Pin 8
Volts

~

rn
::J
0:

'"

§!

PHASE

lK

10K

lOOK

8'"

20

180 t;:

Pin 12

Volts

:;:

270
360

...... ....c.>o

Co= a

......

I

PWM Output
VOlj8e

en

'"~
:t:
Q.

a

1M

FREQU ENCV - (Hertz)
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

'

g::x.~~ftage

a

OJ

"-

-......~

100

Input to E1. Slop

a

"-~

-........ ...........

-

Volts

TJ = 25°C

500

1000

1500

DELAV TIME - (n sec)

3·98

PRINTED IN U.S.A.

UC1840
UC2840
UC3840

OPEN·LOOP TEST CIRCUIT
r=-.

"""

R,

lOOk

115

Su pply

R,

180k

V~

VoItage

16

~

R,

20k

L-.!.!.
9

C, .001
R,

,!£

Slow St.

VREF

Y,N Sense

Dnv Bias

UCI840
D.U.T.

RT/Cr

PWM Out

~

'!!"""'l....,/,
14

Roc

iRc=lk

12

Ramp

Gnd 13

Start/UV

Stop

~o--

Reset

f-o/<>-

20k*
2

R,

9k

3

OV Sens

R, 3k

Inv

Camp

tdJ

C"~.OOI

10k

=

NI

I

Output
Monitor

C/L(+)

C/L(-)

6

18

II

+C.

~

7

VREF

Io.1

10k

10k
~

43k

48k
~

PWM
Adj.

2k

L-+

-

_

fR, + R,+ R~

Nominal Frequency = Rrler = 50kHz

fR, + R + R~
Start Voltage = 3 \~) + O.2R,

10k

UVFaultVoltage= 3\ R2+R3 )=8V
=

12V

OV Fault Voltage

fR+R+R~

= 3 ,~) = 32V

Current Sense
Test

Current Limit = 200mV
Current Fault Voltage = 600mV
Duty Cycle Clamp

=50%

FLYBACK APPLICATION (A)

REGULATOR APPLICATION (8)

In this application (see Figure A, next page), complete control is
maintained on the primary side. Control power is provided by RIN
and CJN during start-up, and by a primary-referenced low voltage
winding, N2, for efficient operation after start. The error amplifier
loop is closed to regulate the DC voltage from N2 with other
outputs following through their magnetic coupling - a task made
even easier with the UC1840's feed-forward line regulation.

Although primarily intended for transformer-coupled power systems, the UC1840's advantages of feed-forward for high ripplerejection, a fully contained fault monitoring system and remote
start/stop capability make it worth conSidering for other types of
regulators. Since the fault logic within the UC1840 requires recycling the voltage sensed by the Start/UV Comparator to reset the
error latch, a need for automatic restart must be addressed in a
manner similar to that shown in Figure B (next page). In this
simple, non·isolated, buck regulator; diode 01 provides a lowimpedence bootstrapped drive power source after start-up is
achieved through RIN and CIN. When a fault shutdown terminates
switching action, the loading of Q1 and Rdwililowerthevoitageon
pin 2 to effect an automatic re-start attempt which will continuo
ously recycle until the fault is removed.

An extension to this application for more precise regulation would
be the use of the UC19011soiated Feedback Generator for direct
closed-loop control to an output. The UC1840 will readily accept
digital start! stop commands transmitted from the secondary side
by means of optical couplers.
Not shown are protective snubbers or additional interface circuitry which may be required by the choice of the high-voltage
switch, Qs, or the application.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-99

PRINTED IN U.S.A

UC1840
UC2840
UC3840

UC1840 PROGRAMMABLE PWM CONTROLLER IN A SIMPLIFIED FLYBACK REGULATOR (A)

AC
INPUT

R.

R,

R,

R.

R,

Res

~

r'

UC1840 CONTROLS A HIGH·CURRENT NON·ISOLATED BUCK REGULATOR (B)
Vo

r------------,

!

PIC660

O---~------------------------~----------~~--------_r~_,~

: lOOpH
I
I

:

:

.J

33k

Dl
SESll05

......-+__t-'VIO"k"--f

0.1

Vo = 5V
SA

1

50

"F

QI

2N2222

1000
5V
lOOk

*lnF
24k
3k 2k

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3·100

PRINTED IN U.S.A.

UC1840
UC2840
UC3840

UC1840 POWER SEQUENCING FUNCTIONS

A

B

I

I

o
I

G

I

H I

M N 0

I I

I I I

SIOW-Sta~

/

Stop
(Note 2)

I

r

I

I

•

V

I

I

I~

lmill

PWM

u

Q

Imflflfl

U

U

Reset

I I
A

B

C

o E

G

H I

I I
M

J

N 0

Q R S

U

V

Notes: 1. VC represents an analog of the output voltage generated by a primary-referenced
secondary winding on the power transformer. It is the voltage monitored by the start/UV
comparator and, in most cases, is the supply voltage, V,N, for the UC1840.
2. Although input to External Stop, Pin 4, is shown, results are the same for any fault input
which sets the Error Latch.

UC1840 POWER SEQUENCING FUNCTIONS
TIME
A

Initial turn-on, Vc rises with light load
Start threshold. Driver Bias loads Vc
Operating PWM regulates Vc
Stop input sets Error Latch turning off PWM
UV low threshold, Error Latch remains set
Start turns on Driver Bias but Error Latch still set

B

C
D

E
F
G

H

}

I

Vc and Driver Bias continue to cycle
Stop command removed
Error Latch reset at UV low threshold
Start threshold now removes slow-start clamp
Return to normal run state
Reset Latch set signal removed
Error Latch set with momentary fau It
Error Latch does not reset as Reset Latch is reset

J
K
L
M

N
0

P
Q
R

EVENT

}

S
T
U

V

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Vc and Driver Bias recycle with no turn-on.
Reset Latch set is set with momentary Reset signal
Vc must complete cycle to turn-on
Start and Error Latches reset
Normal start initiated
Return to normal run state

3-101

PRINTED IN U.S A.

UC1842
UC2842
UC3842

LINEAR INTEGRATED CIRCUITS
Off-Line Current Mode PWM Controller
FEATURES
• Optimized for off-line control
• Low start up current «lmA)
• Automatic feed forward compensation
• Pulse-by-pulse current limiting
• Enhanced load response characteristics

DESCRIPTION
The UC1842 family of control ICs provides in an eight pin min~citp the necessary
features to implement off-line, fixed frequency current mode coritllol schemes with a
minimal external parts count. The superior performance of~te¢hnique can be
measured in improved line regulation, enhanced loaq~_n-se'o~cteristics, and a
simpler, easier to design control loop. Topological advantages includt' inherent pulse-bypulse current limiting.
.

• Under-voltage lockout with 6V
hysteresis

Protection circuitry includes built in under~.;o_ Joc~ and current limiting. Other
features include fully latched operation, a l~ tril"t\me.d bandgap reference, and start-up
cu rrent less than 1mAo
.
- .;

• Double pulse suppression
• High current totem pole output

These devices feature a totem J!ltJe:Qutpuf~esiined to source and sink high peak
current from a capacitivelQ,~d,!Wj;h aO~;gate.of a power MOSFET. Consistent with N
Channel power devicelO. th~0t4tpUf is low in-ttre OFF state.

• Internally trimmed bandgap reference
• 500kHz operation

CONNECTION DIAGRAM

ABSOLUTE MAXIMUM RATINGS (Note 1)
Supply Voltage (Icc < 30mA) ... _........... _.• .... . . . . . ..
. .... Self Limiting
Supply Voltage (Low Impedence Source) ... ' h . ' C. ;~ . . . . . . . . . _, . . . . . . . . . . . . . . . . . . . . . 30V
Output Current ................. : .....
±lA
Output Energy (Capacitive Load) . . . . . . .
. .................... 5/lJ
Analog Inputs (Pin 2, Pin 3) .....
.......• . ............... -0.3V to Vee
Error Amp Output Sink Current ,:".
.. ........................ lOmA
Power Dissipation at TA ::::; 70 0 e;;" .. ".;.....
. .............................. 1W
Derate 12.5mW/oC for.T... >''1~~C<
Storage Temperature Eqinge :.;;;. ::~,: •.. .':. . ..................... -65°C to + 150°C
Lead Temperature (Sola~iJ,O Sei:O.ll(is) ................ : ................ _... 300°C

,f."........ .

.....................

"li>

Note: 1. All voltages are with respect to Pin 5.
All currents are positivi! lmo the specified terminal.

DIL·S (TOP VIEW)
N or J PACKAGE

COMPOS
VFB

2

V,"

7 Vee

ISENse 3

6 OUTPUT

R,IC, 4

5 GROUND

BLOCK DIAGRAM

'>-..--1 SIR !t:F 1--1r-.....-

......- - - - - - - - t - - - - t
VREF
5.0V
50mA

.LL

2R

3~--------------~

CURRENT
SENSE

3-102

~UNITRDDE

UC1842
UC2842
UC3842
ELECTRICAL SPECIFICATIONS

(Unless otherwise stated, these specifications apply for -55 ::;TA::;125°Cfor UC1842; -25 ::;TA :S85°C
for UC2842; 0 ::; TA ::; 70°C for UC3842; Vcc 15V (Note 5); RT 10K; CT 3.3nF.)

=

PARAMETER

=

=

UC1842
UC2842

TEST CONDITIONS

UC3842
UNITS

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

4.95

5.00

5.05

4.90

5.00

5.10

V

6

20

6

20

mV

Reference Section

=25°C, 10 =1mA

Output Voltage

Tj

Line Regulation

12::; VIN::; 25V

Load Regulation

1::; 10::;20mA

Temp. Stability

(Note 2)

Total Output Variation

Line, Load, Temp. (Note 2)

Output Noise Voltage

10Hz::; f ::; 10kHz, Ti

Long Term Stability

TA

Output Short Ci rcuit

TA

6

25

6

25

mV

0.2

0.4

0.2

0.4

mV;oC

4.90

=25°C (Note 2)

5.10

4.82

=125°C, 1000 Hrs. (Note 2)
=25°C

5.18

V
pV

50

50
5

25

5

25

mV

-100

-130

-100

-130

mA

52

57

52

57

kHz

0.2

1

0.2

1

Oscillator Section

=25°C

Initial Accuracy

Ti

Voltage Stability

12::; Vcc::; 25V

Temp. Stability

TMIN::; TA::; TMAX (Note 2)

Amplitude

VPIN

4

peak to peak

VPIN

1

=2.5V

47

47

%

5

5

%

1.7

1.7

V

Error Amp Section
Input Voltage

2.45

Input Bias Current

2.50

2.55

-0.3

-1

2.42

2.50

2.58

V

-0.3

-2

pA

AvoL

2::; Vo::; 4V

65

90

65

90

dB

Unity Gain Bandwidth

(Note 2)

0.7

1

0.7

1

MHz

PSRR

12::; Vee::; 25V

60

70

60

70

dB

Output Si nk Current

VPIN

=2.7V, VPIN 1 =1.1V
VPIN 2 =2.3V, VPIN 1 =5V
VPIN 2 =2.3V, RL =15K to ground
VPIN 2 =2.7V, RL =15K to Pin 8

2

6

2

6

mA

-0.5

-0.8

-0.5

-0.8

mA

5

6

5

6

Output Source Current
VOUT High
VOUT Low

2

0.7

1.1

2.85

3

3.15

0.9

1

1.1

V

0.7

1.1

V

2.85

3

3.15

V/V

0.9

1

1.1

Current Sense Section
Gain

(Notes 3 & 4)

Maximum Input Signal

VPIN

PSRR

12 ::; Vcc ::; 25V (Note 3)

1

=5V (Note 3)

70

V
de

-2

-10

-2

-10

pA

200

400

200

400

ns

ISINK

0.1

0.4

0.1

0.4

V

ISINK

1.5

2.2

1.5

2.2

V

Input Bias Current
Delay to Output

70

Tj

=25° (Note 2)

Output Section
Output Low Level
Output High Level
Rise Time
Fall Time

=20mA
=200mA
ISOURCE =20mA
ISOURCE =200mA
Tj =25°C, CL =InF (Note 2)
Ti =25°C, CL =InF (Note 2)

13

13.5

13

13.5

12

13.5

12

13.5

V
V

50

150

50

150

ns

50

150

50

150

ns

Not..: 2. These parameters, although guaranteed, are not 100% tested in production.
3. Parameter measured at trip point of latch with VPIN 2 = o.
4. Gain defined as:
b. VPIN 1
A = b. VPIN 3 ; a :$ VPIN 3:$ a.BV.
5. Adjust Vcc above the start threshold before setting at 15V.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

3-103

PRINTED IN U.S.A

..

UC1842
UC2842
UC3842
ELECTRICAL SPECIFICATIONS

(Unless otherwise stated, these specifications applyfor-55 $TA $125·Cfor UC1842; -25 $TA $85·C
for UC2842; 0 $ TA $ 70·C for UC3842; Vcc =15V (Note 5); RT =10K; CT =3.3nF.)

PARAMETER

UC1842
UC2842

TEST CONDITIONS
MIN.

TYP.

UC3842
MAlt

MIN.

UNITS

TYP.

MAX.

Under·Voltage Lockout Section
Start Threshold
Min. Operating Voltage

After Turn On

15

16

17

14.5

16

17.5

V

9

10

11

8.5

10

11.5

V

Total Standby Current
Start·Up Current
Operating Supply Current VPIN 2 =VPIN
Vee Zener Voltage
Icc =25mA

3

=OV

0.5

1

0.5

1

mA

11

15

11

15

mA

34

34

V

Not..: 2. These parameters. although guaranteed, are not 100% tested in production.
3. Parameter mllasured at trip point of latch with
4. Gain defined as:

t:. VPIN 1
A = - - - ; 0 ,; VPIN
t:. VPIN 3

V.,•• = O.

3';

O.BV.

5. Adjust Vee above the start threshold before set1ing at 15V.
UNDER·VOLTAGE LOCKOUT

Icc

I
0'!{g":J?~~D
I
I
I
I
IL_____________ _

~:l~::::=:::::-f

f _ . vee

10V

16V

ERROR AMP CONFIGURATION

2.50V
O.5mA

L ________________ _

ERROR AMP CAN SOURCE OR SINK UP TO O.SmA

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3·104

PRINTED IN U.S.A.

UC1842
UC2842
UC3842
CURRENT SENSE CIRCUIT

•

2R

R

CURRENT
SENSE
COMPARATOR

1V

R

Rs

I
IL

______________ _

PEAK CURRENT (lollS DETERMINED BY THE FORMULA:

Ismax "
A SMALL

.lff-

RC FILTER MAY BE REQUIRED TO SUPPRESS SWITCH TRANSIENTS.

OSCILLATOR WAVEFORMS AND MAXIMUM DUTY CYCLE

VPIN 4

VRE'

8 \----,
RT

RT/CT

4

1---"

I

'"o~H

-IL

______.JnL._____

INTERNAL CLOCK

LARGE AT
SMALL CT
CT

____ -1

INTERNAL CLOCK

Oscillator timing capacitor. CT. is charged by VREF through RT and
discharged by an internal current source. During the discharge
~ime. the internal clock signal blanks the output to the low state.
Selection of RT and CT therefore determines both oscillator
frequency and maximum duty cycle. Charge anddischargetimes
are determined by the formulas:

te" 0.55 RTCT

lei ... RrCT In (

6.3 RT - 2.7)
(RT in 1(0)
6.3 RT - 4

Frequency. then. is: f = (Ie + leIf'.

1.8

ForRT>5k f - - - RrCT

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-105

PRINTED IN U.S.A.

UC1842
UC2842
UC3842

Output Saturation Characteristics

,

Vee == 15V

--

TA

=25°C

- - - TA=-55°C

--

- ..~--

Error Amplifier Open·Loop .Frequency Response

,,

,,III
-- -.,...-:: - I--"

" 1/ SOURCE SAT (V"

i.-f-- ~

o
.01

.02

.03.04 .05 .07

i'-,

80

I

J

~

60

~

.........

z

;;:

l::;

"
w

~

r::,.

40

~

0

§?

I

.2

.3.4.5

.7

10

1.0

~~
~~
~
lOOK

v---.0'

-90

-135

.
~

'"m

~

A,-

SITSAi(Vr

.1

-45

OUTPUT CURRENT. SOURCE OR SINK - (A)

100

1K

10K

1M

-180

10M

FREQUENCY - (Hz)

OPEN·LOOP LABORATORY TEST FIXTURE

r---------~~--.---------------------------_.----------------------_oV~,

A }---t"-----Q V"

r~--;1;:;---1
4.7K

r-~~~-~~1

COMP

lK
ERRORAMP~'--4~--~-+-~

ADJUST

4.7K

5K
~-+---~--~~------oOUTPUT
ISENSE
ADJUST

"'--------------
0

20

Z
~

0

"

""

COMPo

"

"

.......
It < O.5mA
100

Error Amplifier can source up to O.5mA.

Ik

10k

lOOk

0'
-90'
-180'

1M

FREQUENCY (Hz)

Error Amp Open. Loop D.C. Gain vs Load Resistance
110

v,~ 20~

=
T, = 25'C -

iD
~

z

100

..,''"w"
':;

90

. /~

;;:

..g
..

ape

1/

0

>

0

zw

I

80

I

0

70

o

10

m

~

~

~

w ro w

~

~

OUTPUT LOAD RESISTANCE. R, (K·OHMS)
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

3-111

PRINTED IN U.S.A.

UC1846 UC1847
UC2846 UC2847
UC3846 UC3847

Parall.1 Operation

9
8

RT

-=

RT
MASTER
CT

r

SYNC

I

COMP

10

t--'V\J\r---;1--::--+------""-------13> ~

10
SYNC

-EfA

COMP

SLAVE
(ADDInDNAL UNITS)

...--o........:8'-!CT

I

Slaving allows parallel operation of two or more
units with equal current sharing.

Puis. by Puis. Current Limiting
I.

(+)4

v...,

R.

(-)3

ISE"8£

O.sv
R.
EfA
CURRENT
LIMIT

R,

COMP

Ra VAEF
---0.5

-::Peak Current (I.) is determined by the formula:

I. = R, + R,

3R.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

3·112

PRINTED IN U.S A.

UC1846 UC1847
UC2846 UC2847
UC3846 UC3847
Soft Start and Shutdown/Restart Functions

•

ISENSE

COMP

R,
1 CURRENT
LIMIT

r

v...,

16 SHUTDOWN

SHUTDOWN WITHOUT AUTO-RESTART (LATCHED)

SHUTDOWN WITH AUTO·RESTART

CURRENT LIMIT
(PIN 1)

----------\

0.5V------

r----~---------

SHUTDOWN
(PIN 16)

:~~~__________________~rlc__________________-;

!------'nL-____

PWM

[UlL-----

V~~F < O.SmA

VREF

V;;:'

> 3mA (LATCHED OFF)

VREF

If ----

< D.SmA, the shutdown latch will commutate

If ---- > 3mA, the device will latch off

when I.

= D.SmA and a restart cycle will be initiated.

until power is recycled.

R,

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

R,

3-113

PRINTED IN U.S.A.

UC1846 UC1847
UC2846 UC2847
UC3846 UC3847

Current Sense Amp Connections

CURRENT
SENSE

A small RC filter may be required in some applications to reduce switch transients.
Differential input allows remote, noise free sensing.

Single Ended Boost Configuration

----ucii46---@--------10 SYNC

FEEDBACK

+VfN

Vc

SFTIST

L - - - - --=- - § - - - - - .J
GND

UNITRODE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3·114

PRINTED IN U.S.A

UC1846 UC1847
UC2846 UC2847
UC3846 UC3847
Buck Converter with Current Sense Winding

•

----Uci846----@)--------SYNC

FEEDBACK

+VU'l

Vc

SFTIST

L _ _ _ _-=- _ -®- _ _ _ _ ___1I
GNO

Push/Pull Converter with Slope Compensation

RCOMPENSATION

---uci846----@)--------10 SYNC

+VIN

Vc

FEEDBACK

INDUCTOR CURRENT
DOWNSLOPE

SFT/S1

L _ _ _ _-=- _

I

GNO

~-------1

Current loop instability above 50% duty cycle can be corrected
using slope compensation derived from the sawtooth oscillator.
Compensation magnitude should be greater than 112 of the down·

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

slope of the inductor current waveform as shown. Alternatively,
the compensation signal can be summed into the negative input
of the error amplifier.

3·115

PRINTED IN U.S.A

UC1901
UC2901
UC3901

LINEAR INTEGRATED CIRCUITS
Isolated Feedback Generator
FEATURES

DESCRIPTION

• An· amplitude-modulation system for
transformer coupling an isolated
feedback error signal

The UC1901 family is designed to solve many of the problems associated with closing a
feedback control loop across a voltage isolation boundary. As a stable and reliable
alternative to an opti~al coupler, these devices feature an amplitude modulation system
which allows a loop error signal to be coupled with a small RF transformer or capacitor.

• Low-cost alternative to optical couplers
• Internal 1% reference and error
amplifier
• Internal carrier oscillator usable to
5MHz

The programmable, high-frequency oscillator within the UC190l series permits the use
of smaller, less expensive transformers which can readily be built to meet the isolation
requirements of today's line-operated power systems. As an alternative to RF operation,
the external clock input to these devices allows synchronization to a system clock or to
the switching frequency of a SMPS.

• Modulator synchronizable to an external
clock

An additional feature is a status monitoring circuit which provides an active-low output
when the sensed error voltage is within ±lO% of the reference.

• Loop status monitor

Since these devices can also be used as a DC driver for optical·couplers, the benefits of
4.5 to 40V supply operation, a 1% accurate reference, and a high gain general purpose
amplifier offer advantages even though an AC system may not be desired.

ABSOLUTE MAXIMUM RATINGS (Note 1)

CONNECTION DIAGRAM

Input Supply Voltage, Y,N •..••.•..••.•.•.•.•.•.•.•.•.•.•....•..•.•..•.•..•..... 40V
Reference Output Current ................................................... -lOmA
Driver Output Currents ..................................................... -35mA
Status Indicator Voltage ....................................................... 40V
Status Indicator Current ..................................................... 20mA
Ext. Clock Input ............................................................... 40V
Error Amplifier Inputs ............................................... -O.5V to +35V
Power Dissipation at T. =25°C
Derate at lOmWfOC above T. = 50°C.... .. .. .... .. ..................... 1000mW
Power Dissipation at Tc = 25°C
Derate at l6mWfOC above T. =25°C.. .. .. ........ .............. ....... 2000mW
Thermal Resistance, Junction to Ambient .................................. lOO°C/W
Thermal Resistance, Junction to Case ...................................... 60°C/W
Operating Junction Temperature ................................... -55°C to +150°C
Storage Temperature .............................................. -65°C to + 150°C
Lead Temperature (Soldering, 10 seconds) ................................... 300°C
Nota 1: Voltages are referenced to ground, Pin 7.

DIL-14 (TOP VIEW)

J or N PACKAGE

EXT. CLOCK 2

13

5m~~~

12 COMPENSATION
DRIVER B 4

GROUND

7

Currents are positive into, negative out of the specified terminal.

UC1901 SIMPLIFIED SCHEMATIC
5L't~~~ 1 3 1 1 - - - - - - - - - - - - - - ,

V,.
4K

DRIVER 8

4K

4
N.INV INPUT

DRIVER A
INV INPUT

ERROR·AMP
COMPENSATION

J - - - - - - - - - - - - I 9 ~M~~~CE
EXT

500

CLOCK

1.5 VOLT REFERENCE

"--+----------17

12/83

3-116

GROUND

~UNITRDDE

UC190l
UC2901
UC3901
ELECTRICAL CHARACTERISTICS (Unless otherwise stated, these specifications apply for TA = -55·C to +125·C for the UC1901;
-25·C to +S5·C for the UC290l; and O·C to +70·C for the UC390l; VIN = lOY, RT = lOkCl,
CT = S20pF)
PARAMETER

UC3901

UCl90lIUC2901

TEST CONDITIONS

MIN.

TYP.

MAX.

MIN.

TYP.

UNITS
MAX.

Reference Section
Output Voltage

Tj = 25·C

1.4S5

1.5

1.515

1.47

1.5

1.53

TMIN ~ Ti ~ TMAX

1.470

1.5

1.530

1.455

1.5

1.545

V

Line Regulation

VIN = 4.5 to 35V

2

10

2

15

mV

Load Regulation

lOUT = 0 to 5mA

4

10

4

15

mV

Short Circuit Current

T; = 25·C

-35

-45

-35

-45

mA

Error Amplifier Section (To Compensation Terminal)
Input Offset Voltage

VCM = 1.5V

1

4

1

S

mV

Input Bias Current

VCM = 1.5V

-1

-3

-1

-6

pA

Input Offset Current

VCM = 1.5V

0.1

1

0.1

2

pA

Small Signal Open Loop Gain

40

60

40

60

dB

CMRR

VCM = 0.5 to 7.5V

60

SO

60

SO

dB

PSRR

VIN = 5 to 25V

SO

100

SO

100

dB

Output Swing, A Vo

0.4

0.7

0.4

0.7

V

Maximum Sink Current

90

150

90

150

pA

Maximum Source Current

-2

-3

-2

Gain Band Width Product
Slew Rate

-3

mA

1

1

MHz

0.3

0.3

V/p.s

Modulator/Drivers Section (From Compensation Terminal)
Voltage Gain

11

12

10

12

Output Swing

±1.6

±2.S

±1.6

±2.S

V

Driver Sink Current

500

700

500

700

pA

Driver Source Current

-15

-35

-15

-35

mA

25

MHz

Gain Band Width Product

13

25

14

dB

Oscillator Section
Initial Accuracy

T; = 25·C

140

TMIN ~ Ti ~ TMAX

130

Line Sensitivity

VIN = 5 to 35V

150

.15

Maximum Frequency

RT = 10K, CT = 10pF

Ext. Clock Low Threshold

Pin 1 (CT) = VIN

Ext. Clock High Threshold

Pin 1 (CT) = VIN

160

130

170

120

.35

150

.15

5

170

kHz

.60

%tV
MHz

5
0.5

0.5

kHz

ISO

V

1.6

1.6

V

±170

mV

Status Indicator Section
Input Voltage Window

@ E/A Inputs, VCM

= 1.5V

±135

Saturation Voltage

EtA A Input = OV, ISINK = 1.6mA

Max. Output Current

Pin 13 = 3V, EtA A Input = O.OV

Leakage Current
Supply Current

Pin 13 = 40V, EtA A Input = 0.2V
VIN = 35V

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3-117

±150

±165

±130

±150

0.45

0.45
S

15

S

V
mA

15

.05

1

.05

5

pA

5

S

5

10

mA

PRINTED IN U.S.A.

•

UC1901
UC2901
UC3901

Transformer Coupled Open Loop Transfer Function
10V
1000F

so
~ll1F

NC
D,B

INV

DoA

N.INV

NC

REF

GRND

i

~,

INPUT

~~

DC

40

20

0

10

'" ,
"

........ ....... PHASE

30

z
~

-:-

":"

"GAIN

"

i!;

9

= lOY

O~f= IMHzTI = 25°C

'"

60

~

BIAS

r2~F

10K

VIN

z 50

11

RT

-....

70

45

-

I'-....

~

IN914

0

180

OUTPUT

2700F

100

10

IK

":"

=

Typical Driver Output Swing
vs Temperature
3.4

/

~

/

3.2
C!l

z

10'

5

VIN

=

;:

3.0

0.

2.8

...'"::>
...::>

:i',

!!S

1M

lOOK

Nl N2 = 20T AWG 26
Core = Ferroxcube 3E2A Fernte, 0 5" 0 D torOId
Carner Frequency = IMHz

Oscillator Frequency
108

~

10K

FREQUENCY - HERTZ
Transformer Data

I roo

90
135

IOV

0

RT = lOKO
Tj = 25°C

ffi

2.6

"" "

>

0:
Cl

.,«

2.4

~

105

~

~

"r-...'~
~

2.2

~

0:

Iti5
'"L\'i

1()4

2.0

~

1.8

0.

1.6
-55

APPLICATION INFORMATION
The error amplifier compensation terminal, Pin 12, is intended as
a source of feedback to the amplifier's inverting input at Pin 11.
For most applications, a series DC blocking capacitor should be
part of the feedback network. The amplifier is internally compensated for unity feedback.

-15

25

45

65

85

105

125

the squarewave will have a fixed 50% duty cycle. If the internal
oscillator is disabled by connecting Pin 1, Cr, to V,N then the
frequency and duty cycle of the output will be determined by the
input clock waveform at Pin 2. If the oscillator remains disabled
and there is no clock input at Pin 2, there will be a linear 12dB of
signal gain to one or the other of the driver outputs depending on
the DC state of Pi n 2.

The waveform at the driver outputs is a squarewave with an
amplitude that is proportional to the error amplifier input signal.
There is a fixed 12dB of gain from the error amplifier compensation pin to the modulator driver outputs. The frequency
of the output waveform is controlled by either the internal
oscillator or an external clock signal. With the internal oscillator

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-35

TEMPERATURE - (OC)

Cr VALUE - PICOFARADS

The driver outputs are emitter followers which will source a
minimum of 15mA of current. The sink current, internally limited
at 700pA, can be increased by adding resistors to ground at the
driver outputs.

3-118

PRINTED IN U.S.A

UC1901
UC2901
UC3901

TYPICAL APPLICATIONS

R.F. Transformer Coupled Feedback

PftIMMY~

POWER AND
SWITCHESi>_ _ _ _--;~

SUPPLY
OUTPUT

.~--~---------------------------------+~~

Feedback Coupled at Switching Frequency

~

PRIMARY
POWER AND
~H~.o-

_____~~

SUPPlY
OUTPUT

~---4--------------------------------~~~

TO SUPPLY

MONITOR

~~~LL;rr:J"

ISOLATION
TRANSFORMER

Optically Coupled DC Feedback

~~RYAND

~

SUPPlY
OUTl'UT

SW1TCH~'~O__________~3

TOPWM~­

CONTROll~_~yt---

/

V

...........

V

r-....

/

,

35

" --

~E

\

/
II

........

\

........

I

,

~

30

0

-.5

i'-..

r--

25

-.6
-.7
-55

-35

-15

25

45

65

85

105

20
-55

125

-35

-15

25

45

65

85

105

125

JUNCTION TEMPERATURE - ·C

JUNCTION TEMPERATURE - ·C

OPERATION AND APPLICATION INFORMATION

[iiCi903- +V'N

REFERENCE
CIRCUIT
TO
OV HYSTERESIS
CONTROL

1.25V

t-----+--t-----u OV THRESHOLD
2.5V

150

OUTPUT

R.
2.5K

R,

2.5K

R.

loc

R.
8K

R.

FAULT WINDOW
THRESHOLD & HYSTERESIS
CIRCUITS

t----I----t-----u UV THRESHOLD

V.OJ
10=-R,

+
V.OJ

.16K

TO
UV HYSTERESIS
CONTROL

I
L __ _
Figure 1. The UC1903 fault window circuitry generates OV and UV thresholds centered around the 2.5V reference. Window magnitude
and threshold hysteresis are proportional to the window adjust Input voltage at Pin 4.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-123

PRINTED IN

u.s

A

UC1903
UC2903
UC3903
OPERATION AND APPLICATION INFORMATION (continued)
Fault Windows Can be Scaled independently

Setting a Fault Window
The fault thresholds on the UC1903 are generated by creating
positive and negative offsets, equal in magnitude, that are
referenced to the chip's 2.5V reference. The resulting fault
. window is centered around 2.5V and has a magnitude equal to
that of the applied offsets. Simplified schematics of the fault
window and reference circuitsare shown in Figure 1 (see previous
page). The magnitude of the offsets is determined by the voltage
applied althe window adjust pin, Pin 4. A bias cancellation circuit
keeps the input current required at Pin 4 low, allowing the use of a
simple resistive divider off the reference to set the adjust pin
voltage.

In many applications, it may be desirable to monitor various
supply voltages, or voltage levels, with varying fault windows.
Using the reference output and external resistive dividers this is
easily accomplished with the UC1903. Figures 3 and 4 illustrate
how the fault window at any sense input can be scaled
independently of the remaining inputs.

MONITORED
SUPPLY VOLTAGE
(V,)

The adjust voltage at Pin 4 is internally applied across R., an 8K
resistor. The resulting current is mirrored four times to generate
current sources lOA, loa, loc, and 100, all equal in magnitude. When
all four of the sense inputs are inside the fault window, a no·fault
condition, Q.and Q.are turned on. In combination with D, and D.
.this prevents loa and loofromaffectingthefaultthresholds.lnthis
case, the OV and UV thresholds are equal to VAEF + 10A(R. + R.) and
VAEF - loc(R7 + R.) respectively. The fault' window can be
expressed as:

(1)

2.5V ±

R,
SENSE 1·4 INPUT

R,
2.5V
REF.

± 10 (V AOJ)

•

R, + R, R,f(R,

+ R,)

R,

V~OJ

F~~( NOM)

; 'In terms of a sensed nominal voltage level, Vs, the window as a
,...... ""'percent variation is:

(2)

FAULT WINDOW FOR THE SENSE INPUT.
IN PERCENT. IS;

• _R_,_
Rl +R2

= 2.5V.

Figure 3. Using the reference output and a resistive divider, a
sense input with an independently wider fault window
can be generated.

V. ± (10 • VADJ)%

When a sense input moves outside the fault window given in
equation (1), the appropriate hysteresis control signal turns off Q.
or Q•. For the under·voltage case, Q. is disabled and current
source 108 flows through D•. The net current through R7 becomes
zero as loa cancels loe, giving an 8% reduction inthe UVthreshold
offset. The over·voltage case is the same, with Q. turning off,
allowing 100 to cancel the current flow, lOA, through Re. The result
is a hysteresis at the sense inputs which is always 8% of the
window magnitude. This is shown graphically in Figure 2.

R,

~~~i 0---+---1'--1
3.125

J

en 3.0
!:;
§; 2.875
I
~

2.750

,

ir

~ 2.625

...en

~ 2.50

en

i::::5
l-

3'

~2.125
:::J

~ 2.0

1.875

..

~

NO

~

,,

~n
FAULT

~~

.5

FAULT WINDOW FOR
THE SENSE INPUT.
IN PERCENT. IS;

20
15

HYsiERESIS

g

10 "-

1..-

I

5
FAULT
WINDOW

:=
g
z

Figure 4. The general purpose op·amp on the UCl903 can be
used to create a sense input with an independently
tighter fault window.

~
-5 ~

~

~

- ..J WINDOW
FAULT j;:
o

~

i- ....

25

1.0

-10~

~ .....
~

1.5

2.0

Figure 4 demonstrates one of many auxiliary functions that the
uncommitted op·amp on the UC1903 can be used for.
Alternatively, this op·amp can be used to buffer high impedence
points, perform logic functions, or for sensing and amplification.
For example, the G.P. op·amp, combined with the 2.5V reference,
can be used to produce and buffer an optically coupied feedback
signal in isolated supplies with primary side control. The output
stage of this op·amp is detailed in Figure 5. The NPN emitter
follower provides high source current capability, ;:::20mA, while
the substrate device, Q., provides good transient sinking
capability.

-15 ~
-20

-25
2.5

WINDOW ADJUST VOLTAGE (VA.,) AT PIN 4

figure 2. The fault window and threshold hysteresis scales as
a function of the voltage applied at Pin 4, the window
adjust pin.

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

3-124

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UC1903
UC2903
UC3903
OPERATION AND APPLICATION INFORMATION (continued)

Using The Line/Switcher Sense Output
The line switcher sense inputto the UC1903 can be used for early
detection of line, switcher, or other power source, failures.
Internally referenced to 2.0V, the line sense comparator will
cause the POWER OK output to indicate a fault (active low)
condition when the LINE/SWITCHER SENSE input goes from
above to below 2.0V. The line sense comparator has
approximately 175mV of hysteresis requiring the line/switcher
inputto reach 2.175V before the POWER OK output device can be
turned-off, allowing a no-fault indication. In Figure 7 an example
showing the use of the LINE/SWITCHER SENSE input for early
switcher-fault detection is detailed. A sample signal is taken from

UC1903
G'p.OP-AMP
OUTPUT STAGE

L-----t---,---116
R,
150n

OUTPUT

SUPPLY
OUTPUT

~-+---------iQ,

TO OP-AMP
INPUT STAGE

PWM
CONTROL

R.
500n

t

)f---.-----...~-o

150llA
R,

Figure 5. The G.P. op·amp on the UC1903 has a high source
current p-20mA) capability and enhanced transient
sinking capability through substrate device Q3.

TO UC1903
LINE/SWITCHER
SENSE INPUT

Rgure 7. The line/switcher sense input can be used for an
early line or switcher fault indication.

Sensing a Negative Voltage Level
the output of the power transformer, rectified and filtered, and
used at the line/switcher input. By adjusting the R2 C time
constant with respect to the switching frequency of the supply a nd
the hold up time of the output capacitor, switcher faults can be
detected before supply outputs are significantly affected.

The UC1903 has a dedicated inverter coupled to the sense 4
input. With this inverter, a negative voltage level can be sensed as
shown in Figure 6. The output of this inverter is an unbiased
emitter follower. Bytyingthe inverting input, Pin 5, high the output
emitter follower will be reverse biased,leavingthe sense 4 input in
a high impedence state_ In this manner, the sense 4 input can be
used, as the remaining sense inputs would be, for sensing positive
voltage levels.

OV and UV Comparators Maintain Accurate Thresholds
The structure of the OV and UV comparators, shown in Figure B
results in accurate fault thresholds even in the case where
multiple sense inputs cross a fault threshold simultaneously_
Unused sense inputs can be tied eithertothe2.5Vreference, or to
another, utilized, sense input. The four under- and over-voltage
sense inputs on the UC1903 areciamped as detailed on the Sense
1 input in Figure B. The series 2K resistor, R" and zenerdiode,Z"
prevent extreme under· and over-voltage conditions from
inverting the outputs of the fault comparators_ A parasitic diode,
D" is present at the inputs as well. Under normal operation it is
advisable to insure that voltage levels at all of the sense inputs
stay above -O.3V. The same type of input protection exists at the
line sense input, Pin 15, except a 5K series resistor is used.

+
2.5V

R}

+

NEGATIVE
SUPPLY (-V,)

The fault delay circuitry on the UC1903 is also shown in Figure B.
In the case of an over-voltage condition at one ofthe sense inputs
Q20 is turned off, allowing the internal 60pA current source to
charge the user-selected delay capacitor_ When the capacitor
voltage reaches LBV, the OV and POWER OK outputs become
active low. When the fault condition goes away Q20 is turned back
on, rapidly discharging the delay capacitor. Operation of the
under-voltage delay is, with appropriate substitutions, the same.

NOTE, A SIMILAR SCHEME WI THE G.P.
OP-AMP WILL ALLOW A SECOND NEGATIVE SUPPLY TO BE MONITORED.

Figure 6. Inverting the sense 4 input for monitoring a negative
supply is accommodated with the dedicated inverter.

UNITROOE CORPORATION· 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

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PRINTED IN U.S.A

II

UC1903
UC2903
UC3903

OPERATION AND APPLICATION INFORMATION (continued)

+----4-------1+
1.8V

f

OV FAULT
INDICATION
TO OUTPUT
LOGIC

TO
OV
OV
HYSTERESIS
THRESHOLD CONTROL
lOOIlA VOLTAGE

EXT.
UV DELAY
TCAPACITOR

[!}-SENSE2

[!]-- SENSE 3
0--SENSE4

+----4-------1+
1.8V

J7

UV FAULT
INDICATION
TO OUTPUT
LOGIC

Figure 8. The OV and UV comparators on the UCl903 trigger respective fault delay circuits when one or more of the sense inputs
move outside the fault window. Input clamps insure proper operation under extreme fault conditions.

Start Latch and Supply Under·Voltage Sense Allow Predictable
Power· Up
The supply under-voltage sense and start-latch circuitry on the
UC1903 prevents fault indications during start-up or low input
supply (+V'N) conditions. When the input supply voltage is below
the supply under-voltage threshold the OV and UV fault outputs
are disabled and the POWER OK output is active low. The POWER
OK output will remain active until the input supply drops below
approximately 3.0V. With +V'N below this level, all of the open
collector outputs will be off.
When the input supply is low, the under-voltage sense circuitry

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

resets the start-latch. With the start-latch set, the UV fault output
will remain disabled as the input supply rises to its normal
operating level (8-40V). The latch stays set until all of the sense
inputs are above the under-voltage threshold. This allows slow
starting, or supply sequencing, without an artificial under-voltage
fault indication. Once the latch is set, the UV fault output will
respond if any of the sense inputs drop below the under-voltage
threshold.

3-126

PRINTED IN U.S.A.

UC7800
UC7800C
SERIES

LINEAR INTEGRATED CIRCUITS
Three Terminal Fixed Voltage Positive Regulators
FEATURES

DESCRIPTION

•
•
•
•
•
•
•
•

These three terminal monolithic positive voltage regulators employ internal current
limiting, thermal shutdown and safe area compensation, making them essentially
indestructible. If adequate heat sinking is provided, they can deliver over 1A of output
curren!. They are intended as fixed voltage regulators in a wide range of applications
including local (on card) regulation for elimination of distribution problems associated
with single point regulation. In addition to use as fixed voltage regulators, these devices
can be used with external components to obtain adjustable output voltages and
currents. These units feature an on-chip trimming system to set the output voltages to
within ±4% of nominal. Two companion series, the UC7800A and UC7800AC, offer
tighter output tolerances, and improved line and load regulation characteristics.

±4% preset output voltage
Complete specifications at 1A load
No external components
Internal thermal overload protection
Internal short circuit current limiting
Output transistor safe area compensation
Available in TO-3 and TO-220 packages
Output 'voltages of 5, 12 and 15V (For
other voltages, please contact the factory)

ABSOLUTE MAXIMUM RATINGS
Input Voltage .......................... _....... _..................... _.......... 35V
Power Dissipation .................................................. Internally limited
Operating Junction Temperature Range
UC7800 SERIES ................................................ -55°C to +150°C
UC7800C SERIES .................................................. O°C to +125°C
Storage Temperature Range ............... _. _...................... -65°C to +150°C
Lead Temperature (Soldering, 10 seconds)
K (TO-3) package .......................................................... 300°C
T (TO-220) package ..................................... '" ....... _........ 230°C
PowerIThermal Characteristics
T (TO-220) Package
K (TO-3) Package
Rated Power @ 25°C
Te ....................................... 20W _... _. " ........... 15W ..... :.
TA •••••••••••••••••••••••••••••••••••••• 4.3W ................ _. 2W·...... .
Thermal Resistance
8Je ••••••••••••••.•••••••••••••••••••••• 3°C/W .. _.... _........ 3°C/W .... .

8J A

••••••••••••••••••••••••••••••••••••

35°C/W ............... 60°C/W _... .

TVPICAL APPLICATIONS

Fixed Output Regulator

INPUT

0----,----',

.22pF

Current Regulator

f=----f'-<> OUTPUT

INPUT

R,

.1pF

'----=----- 15

fi'
>-

I""""---

If

::J

a

---

o
25

50

75

100

125

150

JUNCTION TEMPERATURE (0C)

::s.:

"'-

""

"-

r-....

loomv

=

-55°C

'"

'~

TJ=150~

05

-25

~

LV;:-2~['..

>-

IOUT=~~

-75 -50

•

Peak Output Current

25

1"'-

o

10

15

20

25

30

35

INPUT TO OUTPUT DIFFERENTIAL (V)

Ripple Rejection
100

II II

II III

80

~ou,=5V

iil
z 60
a

S

;::
u

-

~

'"
::J
U

>;r 15
>-

r--....

............

1/

::J
0

o
-25

25

50

75

100

125

150

~
K-550 C

""

.-

~

r"-...
"""TJ=150~

05

-75 -50

•

Peak Output Current

25

''""

~

o

10

15

20

25

30

35

INPUT TO OUTPUT DIFFERENTIAL (V)

JUNCTION TEMPERATURE (OC)

Ripple Rejection
100

II
II

80

~~,=5V

CD

:!?

......

z 60
0

>=

~

~

w

~

40

""iii

10

100

lk

10k

lOOk

FREQUENCY (Hz)

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LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

3-137

PRINTED IN U.S.A.

UC7800A UC7800AC SERIES

MECHANICAL SPECIFICATIONS AND CONNECTION DIAGRAMS
UC7800A SERIES
UC7800AC SERIES

F

~BbE

M
Input
Output

~:J:::7--.::

I
G

I

B
D

E

l~
J-

L

F

Ground

G
H
J
K
L
M

7

C 0

A

C

I

H

Bottom View

r

~[f

.~

.312 MIN.
.038-.043 DIA.
•188 MAX. RAD.
1.177-1.197
.655-.675
.205-.225
.420-.440
.525 MAX. RAD.
.151-.161 DIA.

I-¥J
J
f--R

~

I--J

-,

1 3 2

I

-

I
H

S;CTA.A

-l

a

A
8
C

r-------

~

3.43 MAX.
6.35-11.43
7.92 MIN.
0.97-1.09 DIA.
4.78 MAX. RAD .
29.90-30.40
16.64-17.15
5.21-5.72
10.67-11.!8
13.34 MAX. RAD •
3.84-4.09 DIA •

UC7800AC SERIES

W'=-~

F

MILLIMETERS
22.23 MAX .

INCHES
.875 MAX.
.135 MAX.
.250-.450

SEATING

PLANE

TO·204AA K(TO·3)

i-l

l·lnput
2·0utput
3-Ground
4-Ground

od~[:

0
F
G

H
J
K
L
N
Q

R
S
T

INCHES
MIN
MAX
0625
0560
0380
0420
0140
0190
0045
0020
0147
0139
0110
0090
0250
0025
0015
0562
0500
0070
0045
0190
0210
0100
0120
OOSO
0115
0045
0055
0270
0230

-

T(TO·220)

MILIMETERS
MIN
MAX
15.87
1423
1066
966
482
356
114
051
3733
3531
279
229
635
0.64
038
1427
1270
114
177
483
533
254
304
204
292
114
139
585
685

ORDERING INFORMATION
OUTPUT
VOLTAGE

PACKAGE SUFFIX
K(TO·3)

T(TO·220)

5V

UC7805AK
UC7805ACK

UC7805ACT

12V

UC7812AK
UC7812ACK

UC7812ACT

15V

UC7815AK
UC7815ACK

UC7815ACT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

--

--

--

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PRINTED IN U S.A.

UC7900
UC7900C
SERIES

LINEAR INTEGRATED CIRCUITS
Three Terminal Fixed Voltage Negative Regulators
FEATURES
• ±4% preset output voltage
• Output current to 1.5A
• One external component
• Internal thermal overload protection
• Internal short circuit current limiting
• Output transistor safe area compensation
• Available in TO-3 and TO-220 packages
• Output voltages of -5, -12 and -15V (For
other voltages, please contact the factory)

DESCRIPTION
These three terminal monolithic negative voltage regulators employ internal current
limiting, thermal shutdown and safe area compensation, making them essentially
indestructible. If adequate heat sinking is provided, they can deliver over lA of output
current. They are intended as fixed voltage regulators in a wide range of applications
including local (on card) regulation for elimination of distribution problems associated
with single point regulation. In addition to use as fixed voltage regulators, these devices
can be used with external components to obtain adjustable output voltages and
currents. These units feature an on-chip trimming system to set the output voltages to
within ±4% of nominal. This regulator series is an optimum complement to the
UC780017800C line of three terminal positve regulators. Two companion series, the
UC7900A and UC7900AC, offer tighter output tolerances, and improved line and load
regulation characteristics.

ABSOLUTE MAXIMUM RATINGS
Input Voltage .................................................................. -35V
Input-Output Voltage Differential ................................................. 30V
Power Dissipation .................................................. Internally limited
Operating Junction Temperature Range
UC7900 SERIES ................................................ -55°C to +150°C
UC7900C SERIES .................................................. O°C to + 125°C
Storage Temperature Range ........................................ -65°C to + 150°C
Lead Temperature (Soldering, 10 seconds)
K (TO-3) package .......................................................... 300°C
T (TO-220) package ........................................................ 230°C
Power/Thermal Characteristics
T (TO·220) Package
K (TO·3) Package
Rated Power @ 25°C
Te ....................................... 20W ................... 15W ...... .
T•...................................... 4.3W .................. 2W ...... .
Thermal Resistance
BJC ••.••.••..•••.••.•••..•••.•••.••..•. • 3°C/W ................. 3°C/W ..... .
BJ ••••••••••••••••••••••••••••••••••••• 35°C/W ............... 60°C/W .... .

TYPICAL APPLICATIONS
Input bypass capacitors are recommended for stable operation of the UC7900 series of regulators over the input voltage and output
current ranges. Output bypass capacitors will improve the transient response of the regulator.
The bypass capacitors, (2.2pF on the input, IpF on the output) should be ceramic or solid tantalum which have good high frequency
characteristics. If aluminum electrolytics are used, their values should be lOpF or larger. The bypass capacitors should be mounted with
the shortest leads, and if possible, directly across the regulator terminals.

Basic Current Regulator

Fixed Output Regulator

V'N o-~r-""

f-=.....--oVOUT

V'N

...-

'----+-0
lOUT

1182

3·139

=

V~T

lOUT

+ 10

~UNITRDDE

•

UC7900 UC7900C SERIES
5V, NEGATIVE

ELECTRICAL CHARACTERISTICS

T,
Output Voltage

Load Regulation
Quiescent Current

MIN.

= 25°C, V'N =-lOV, 10 = 5mA
=

TI 25°C, -25V :0; V'N :0; -BV
5mA:O; 'ouT:O; LOA, P:O; Po
Over Temperature, TM'N

Line Regulation

UC7905

TEST CONDITIONS

PARAMETER

:0;

T,

:0;

T MAX

-5.20

-4.BO

-5.20

-4.BO

V

-5.20

-4.BO

-5.23

-4.77

V

-5.25

-4.75

-5.25

-4.75

V

50

mV

:0;

T,

:0;

25

50

1

2.5

TYP.

25

50

T MAX

1

MAX.

UNITS

MIN.

=25°C, -25V:O; V'N:O; -7V, 10 =5mA
T, =25°C, V'N =-lOV, 5mA :0; 10 :0; 1.5A
T, =25°C, V'N =-10V, 10 =500mA
Over Temperature, TM'N

UC7905C
MAX.

T,

TYP.

100

mV

2.5

mA

3

3

mA

1.0

1.0

mA

.5

.5

mA

Peak Output Current

=25°C, V'N =-lOV, 5mA:O; '0:0; 1.5A
TI =25°C, -25V :0; V'N :0; -BV, 10 = 500mA
T; =25°C, -lBV :0; V'N :0; -BV, 10 =500mA
f = 10Hz to 100KHz, CL = l¢
T, =25°C, V'N =-lOV, 10 = 500mA
T, =25°C, 10 = lA
T, =25°C, V'N =-lOV
TI =25°C

Avg. Temp. Variation
of VOUT

DoC

-.4

-.4

mV;oC

Long Term Stability

1000 Hrs. @ T,

20

20

mV

Thermal Shutdown

V'N

= -lOV,

175

175

°C

TMAX

150

125

°C

TMIN

-55

0

°C

Quiescent Current
Change
Ripple Rejection
Output Noise Voltage
Dropout Voltage
Short Circuit Current

T,

:0;

T,

:0;

=-lOV, 10 =5mA
= 125°C, V'N =-lOV, 10 = 5mA
10 =5mA

TMAX. V'N

54

dB

54
100

100

2.0

2.0

V

1.B

1.B

A

2.0

2.0

A

JiV

Note: All characteristics except noise voltage and ripple rejection are measured using pulse techniques (t.:s 10ms, duty·cycle :s 5%). Output voltage
changes due to changes in internal temperature must be taken into account separately.
Po: 20W for TO·3 (K) and l5W for TO·220 (T); Min IVo' V'NI @ -55°C: 2.5V.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

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UC7900 UC7900C SERIES
12V, NEGATIVE

ELECTRICAL CHARACTERISTICS

Output Voltage

UC7912

TEST CONDITIONS

PARAMETER

MIN.

UC7912C
MAX.

MIN.

TYP.

MAX.

UNITS

Tj = 25°C, Y,N = -17V, 10 = 5mA

-12.48

-11.52

-12.58

-11.52

V

T, = 25°C, -32V :s Y,N :s -14V
5mA :s 10uT:S LOA, P :s Po

-12.48

-11.52

-12.54

-11.46

V

Over Temperature, T MIN :s T j :s T MAX

-12.60

-11.40

-12.60

-11.40

V

80

mV

Line Regulation

T, = 25°C, -32V :s Y,N :s -14V, 10 = 5mA

Load Regulation

Tj = 25°C, Y'N = -17V, 5mA :s 10 :s 1.5A

30

80

30

240

120

T, = 25°C, Y,N = -17V, 10 = 500mA
Quiescent Current

TYP.

3

3

mV
mA

Over Temperature, T MIN :s T j :s T MAX

4

4

mA

Quiescent Current
Change

T, = 25°C, Y'N = -17V, 5mA :s 10:S 1.5A

.8

.8

mA

T, = 25°C, -32V:s V,N:S -14V, 10 = 500mA

.5

.5

mA

Ripple Rejection

T, = 25°C, -25V :s V'N :s -15V, 10 = 500mA

Output Noise Voltage

f = 10Hz to 100KHz, CL = 1pf
T j = 25°C, Y'N = -17V, 10 = 500mA

200

200

Dropout Voltage

Tj = 25°C, 10 = 1A

1.1

1.1

V

Short Circuit Current

T, = 25°C, Y,N = -17V

1.3

1.3

A

56

56

dB
/lV

Peak Output Current

T j = 25°C

2.0

2.0

A

Avg. Temp. Variation
of VOUT

O°C :s TI :s T MAX. VIN = -17V, 10 = 5mA

-.9

-.9

mvrc

Long Term Stability

1000 Hrs. @ TI = 125°C, Y,N = -17V, 10 = 5mA

48

48

mV

Thermal Shutdown

Y,N = -l7V, 10= 5mA

175

175

°c

T MAX

150

125

°c

TMIN

-55

0

°c

Note: All characteristics except noise voltage and ripple reiection are measured using pulse techniques (tw:S lOms, duty-cycle :s 5%). Output voltage
changes due to changes in internal temperature must be taken into account separately.
Po = 20W for TO-3 (K) and 15W for TO-220 (T).

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

3-141

PRINTED IN U.S.A,

II

UC7900 UC7900C SERIES
15V, NEGATIVE

ELECTRICAL CHARACTERISTICS

Output Voltage

UC7915

TEST CONDITIONS

PARAMETER

MIN.

UC7915C
MAX.

MIN.

TYP.

MAX.

UNITS

Ti = 25°C, V,N = -20V, 10 = 5mA

-15.60

-14.40 ' -15.00

-14.40

V

T, = 25°C, -35V:O:; V,N:o:; -17V
!1mA :0:; 10UT:O:; LOA, P :0:; Po

-15.60

-14.40

-15.68

-14.32

V

Over Temperature, TMIN :0:; Ti:O:; TMAX

-15.75

-14.,25

-15.75

-14.25

V

100

mV

Line Regulation

T, = 25°C, -35V:O:; V,N :0:; -l7V, 10 = 5mA

Load Regulation

TI = 25°C, V,N = -20V, 5mA :0:; 10 :0:; 1.5A

Quiescent Current

TYP.

35

100

35

150

TI = 25°C, V,N = -20V, 10 = 500mA

300
3

3

mV
mA

Over Temperature, TMIN :0:; T, :0:; T MAX

4

4

mA

Quiescent Current
Change

T, = 25°C, V,N = -20V, 5mA :0:; 10:0:; 1.5A

.8

,8

mA

T, = 25°C, -35V:O:; V,N:O:; -17V, 10 = 500mA

,5

.5

mA

Ripple Rejection

TI = 25°C, -28V:O:; V,N:O:; -18V, 10 = 500mA

Output Noise Voltage

f = 10Hz to 100KHz, CL = 1pf
T, = 25°C, V,N = -17V, 10'= 500mA

250

250

Dropout Voltage

TI = 25°C, 10 = 1A

1.1

1.1

V

Short Circuit Current

TI = 25°C, V,N = -20V

1.1

1.1

A

2.0

2.0

A

-1.{)

-1.0

mV;oC

60

60

mV

175

175

°C

(J~,

150

125

°C

"""

-55

0

°C

Peak Output Current

T, = 25°C

Avg. Temp. Variation
of VOUT

O°C :0:; T,:O:; TMAX. V,N = -20V, 10 = 5mA

Long Term Stability

1000 Hrs. @ TI = 125°C, V,N = -20V, 10 = 5mA

Thermal Shutdown

V,N = -20V, 10 =

TMAX
TMIN

5m~
1

56

56

dB
/lV

Note: All characteristics except noise voltage and ripple rejection are, measured using pulse techniques (lw:5 lOms, duty·cycle:5 5%), Output voltage
changes due to changes in internal temperature must be taken into account separately.
Po = 20W for TO·3 (K) and 15W for TO·220 (T).

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

3-142

'PRINTED IN ..u.S.A.

UC7900 UC7900C SERIES
TYPICAL PERFORMANCE CHARACTERISTICS

Dropout Voltage
as a Function of
Junction Temperature

•

Peak Output Current

1.4

0C79,!X
1~:I~;j9S~t~lnlmum

Note:

,

~ 1.2
~

<

i"

is

~ 10

......

Ci
f:::l

~ 0.8

o

-- r1"-- . . .
"""-

louT

--- ~ ~
r-.... ~

~ 1""

~ .......

T,= 150°C

~

J

00",

~<1

..'.

TJ = 25°C

I'-....: ~
t'-....
.......

T

""'r......
. . . . r......
........................ ;

TJ = -55°C

~

Oo"',q

~
,11"'1'. . .

2

~ 0.6
Dropout Condrtron
hOUl

04
-75

I

,

= 5% of VOUT

I

-50 -25

I

I

a

25

50

75

~~

...........

o
100 125 150

o

10

15

20

25

30

35

40

JUNCTION TEMPERATURE (OC)

Ripple Rejection
as a Function of Frequency
lOa

80

,,111111111
, ""'" ""
, ""'" "".
I111

VO ,= -12V AND -15V

L1U'Ull

iD

:s

111111111
ilL

z
0

fd

=>
0-

~ 08

o
I

"'

......

r--

--

lOUr

r---... ......
_1"'-.... .....................

-

...........

>-

..

Peak Output Current

I

~ lA

lou _I

~

~
11)"'1'. . . .

I

I

0

25

75

TJ = -55°C

TJ = 25°C

t'::
r-.... I"-.....
~
t......
........
r::::: ~

~

..........
...........

I
50

~

v;:

T,o 150'C J

00177-4



;!l(l\;)"

,'=:
.~;

,4P6i

,·~i.

,I$();'

::_:
;~:

,S;:;

Part
: Nl.1mbets

l00·C
Cue

1.5
1.5
2,0
3,0
3.0
4,0

UFNF430
2N6802
UFNF432
UFNF420
2N6794
UFNF422

1.5
1.5
2,0
3,0
3.0
4.0

J:ifn ~
Resist-

$\luree

Dillin
2S'C CUrrent'

V~\t!Ige
~)

Cese

(Amps)

1.75
1.5
1.5
1.0
0,95
0.9

2,75
2.5
2.25
1.6
1.5

1.4

11
11
9
65
6,5
5,5

25
25
25
20
20
20

UFNF431
2N6801
UFNF433
UFNF421
2N6793
UFNF423

1.75
1.5
1.5
1.0
0.95
0.9

2,75
2.5
2,25
1.6
1.5
1.4

11
11
9
6.5
6.5
5,5

25
25
25
20
20
20

1.0
1.0
1.5
1.8
1.8
2.5

UFNF330
2N6800
UFNF332
UFNF320
2N6792
UFNF322

2.0
1.6
1.6
1.45
1.25
1.2

3.5
3.0
3.0
2.5
2.0
2.0

14
14
12
10
10
8

25
25
25
20
20
20

3.6
3.6
5.0
1.0
1.0
1.5

UFNF310
2N6786
UFNF312
UFNF331
2N6799
UFNF333

0.85
0.80
0.70
2.0
1.6
1.6

1.35
1.25
1.15
3.5
3.0
3.0

5.5
5.5
4.5
14
14
12

15
15
15
25
25
25

1.8
1.8
2,5
3,6
3.6
5.0

UFNF321
2N6791
UFNF323
UFNF311
2N6785
UFNF313

1.45
1.25
1.2
0,85
0.80
0.70

2.5
2.0
2.0
1.35
1.25
1.15

10
10
8
5,5
5.5
4.5

20
20
20
15
15
15

0.4
0.4
0,6
0,8
0.8
1.2

2FNF6798
UFNF230
UFNF232
2N6790
UFNF220
UFNF222

3.5
3,5
2,8
2,1
2,1
1.75

5,5
5.5
4,5
3,5
3,5
3,0

22
22
18
14
14
12

25
25
25
20
20
20

1.5
1.5
2.4
0.4
0.4
0.6

2N6784
UFNF210
UFNF212
2N6797
UFNF231
UFNF233

1.45
1.4
1.1
3,5
3.5
2.8

2,25
2.2
1.8
5.5
5.5
4.5

9
9
7.5
22
22
18

15
15
15
25
25
25

0.8
0.8
1.2
1.5
1.5
2,4

2N6789
UFNF221
UFNF223
2N6783
UFNF211
UFNF213

2,1
2.1
1.75
1.45
1.1

3,5
3,5
3.0
2.25
2,2
1.8

14
14
12
9
9
7.5

20
20
20
15
15
15

0.18
0.18
0,25
0,3
0.3
0.4

2N6796
UFNFl30
UFNF132
2N6788
UFNF120
UFNF122

5,0
5.0
4,5
3.5
3,5
3.0

8,0
8.0
7,0
6.0
6.0
5.0

32
32
28
24
24
20

25
25
25
20
20
20

1.4

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

lI11Ce

lOO

100
100
60'

,00

::«.1:'
«),

,"6!f

'6().

,<$
'1!J):
;&:l'

Part

(Ohms>

Number$

0,6
0,6
0.8
0.18
0.18
0.25

2N6782
UFNFllO
UFNFl12
2N6795
UFNFl31
UFNF133

2,25
2,25
2.0
5.0
5,0
4,5

3.5
3.5
3.0
8.0
8.0
7,0

14
14
12
32
32
28

15
15
15
25
25
25

0.3
0,3
0.4
0,6
0,6
0.8

2N6787
UFNFl21
UFNF123
2N6781
UFNFlll
UFNF1l3

3.5
3,5
3.0
2.25
2.25
2.0

6.0
6.0
5,0
3.5
3.5
3,0

24
24
20
14
14
12

20
20
20
15
15
15

TO·92
. '0.<

,Vps:
·1)riijfl"

,~

.

.;;.
I"

'

,~

'~)'
1.5
1.5

':~~~:
UFNA12
UFNAll

~
,11»>

Jil)'

;':,:
4·5

2.4
0.4
0,8
3.2

UFND1Z0
UFND123
UFND113
UFND1Z3

Dll-4

1.0
1.0
1.0
1.0

PRINTED IN U.S.A

•

NPN BIPOLAR POWER SWITCHING TRANSISTORS

.5-30A, 60-500V

LOW VOLTAGE

UPT213

UPTA510

UPT214
UPT215

UPTB520

UPTA520

2N3419*

2N3421*

UPT312

2N5662*

HIGH VOLTAGE

UPT313

UPTB530

UPTA530

UPT314
UPT315

2N5663*

UPTB540

'Available as JAN, JANTX, JANTXV.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

4·6

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

~

~

~

~ TO-llI

TO-59

LOW VOLTAGE
Maximum
CollectQr CUrrent

Package Style

TO-S

0::""

60V

UPT612

!:::...J

' BOY

UPT613

~~

~g i

•

5AMP

cl:~ ~

"TO-59

2N2151 ** 2N3999*
2N2880'
2N3998'

2N3749*
2N3996*

2N3997*

, ~iE ~, 1-..-,- - + - - - - + - - - + - - - - 1 - - - - - + - - - - - 1

~~>

100V

_nil

,

8~

VC~ (sat)

Max,

UPT614
UPT615

30@lA

4O@ lA)30@lA '40,@1i\BO@'lA'

IV@5A

,25V@ lA(lV@JAiar2J;l2151}., "

HIGH VOLTAGE

" ' ',M-aximum

, COj~r. :qurrent

150V

UPT321

,~
ffi~

,'200V

UPT322

25QV

UPT323

'irw ~

275Y

UPT521

'::'",

J±g
'alSo;;;
~¥~

300V

'S!g
"
' (;)<1)'

350V

' ;...1;:5, '
"".

'..::;,,:
. -' .,
~

2N5660'

UPT522

2N5839
UPT324
UPT325

2N5661*

UPT524
UPT525

2N6672

UMTl204

UMTl3005 2N6673

5QOV

':,:~::;'.,

: " tf

UMTl3004 2N6671

UMTl203
2N5840

400V
,~,j.

2N5838

UPT523

,cMaximum

,'O.4e:s , " .

O:3Ms(2~5.660~, O.4ft,S
,Itypicall' O. 6p.s {typical;
,
,(2N566l)

",l~5Ms> :,O,'9~,!.,

"

,

.

"

"

'Available as JAN, JANTX, JANTXV
"Avallable as JAN, JANTX
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

4·7

PRINTED IN U.S.A.

NPN BIPOLAR POWER SWITCHING TRANSISTORS

.5-30A, 60-500V

~

~TO-3
LOW VOLTAGE

HIGH VOLTAGE

2N5667*

2N5665*

UPT724
UPT725

"Available as JAN, JANTX, JANTXV.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 .. TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4-8

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

,

•

TO.22"B

LOW VOLTAGE

.. Maxlli'Mn'"
lOAMP

. ' COllector
:, ..... CuJtent.

f;~!
/ .~.

.15~

,'I-'-.7rnf........,:,-+-.- - + - - - - - + - ' - - - t - - - - + - - - + - - - - - - 1

2N565S

2N5659

2N5039*
2N503S*

2N5671

2N6496

"Available as JAN, JANTX, JANTXV.

HIGH VOLTAGE

UMTlOOS.
2N6544

UMTl009
2N6545

UNITROOE CORPORATION· 5 FORBES ROAD
LEX I NGTON, MA 02173 • TEL. (6171 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-9

PRINTED IN U.S.A

POWERDARLI NGTONS

PRODUCT SELECTION GUIDE

External bias types - for fast switching
or other special purpose applications

[."

NPN Power Darlingtons

~

~(3-Pin)

2N6352*
U2T201

2N6350"
U2TlOl
U2T305

U2T405

2N6351*
U2Tl05

2N6353"
U2T205

'Available as JAN, JANTX, and JANTVX types

Plastic NPN Power Darlingtons

Plastic Package types with integral
bias resistance and shunt diode
for maximum economy in standard
applications

U2TA608
U2TA610

UNITAODE CORPORATION. 5 FORBES ROAt...
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

4-10

PRINTED IN U.S.A.

JAN & JANTX 2N2151

POWER TRANSISTORS
2 Amp, 80V, Planar NPN

DESCRIPTION
Unitrode power transistors provide a unique
combination of low saturation voltage, high
gain and fast switching. They are ideally
suited for power supply pulse amplifier and
similar high efficiency power switching
applications.

FEATURES
• Meets MIL-S-19500/277
• Collector-Base Voltage: up to 150V
• D.C. Collector Current: 2A
• Beta Guaranteed at 3 Current Levels
• Characterized for Safe Operating Area

ABSOLUTE MAXIMUM RATINGS

....... 150V
Collector-Base Voltage, Vcao
......... 100V
Collector-Emitter Voltage, VCEQ ......... .
.........................
8V
Emitter-Base Voltage, VEao
D.C. Collector Current, Ic
..................
2A
.. ......................................... 2A
Base Current, la ............................................................
Power Dissipation
...... 30W
100'C Case .
.. ...................................... -55'C to 175'C
Operating Temperature Range .................... ..
.. ............. -65'C to 200'C
Storage Temperature Range ...... ..

tIIECHANICAL SPECIFICATIONS
JAN & JANTX2N2151

r

G

--I

INCHES
400-.455
090-.150
320-.468
570- 763
318- 380

,:~.
BASE

COLLECTOR

055 ±
G

·gtg

424- 437
185-.215

4-11

MILLIMETERS
10.16-11 56
228-381
8.13-11.88
1448-1938
807-965

140±254
.381

1077-1110
470-546

TO-59

~
~UNITRODE

•

JAN & JANTX

2N~151

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
/277C
Subgroup

Method

-

Vdc

A-2

3001

Ic = IOOuAdc, Condo D

-

Vdc
uAdc
uAdc
uAdc
uAde
uAde

A-2
A-2
A-2
A-2
A-2
A-2
A-3
A-3
A-3
A-3
A-3
A-3
A-5
A-5
A-5
C-1

3011
3041
3041
3041
3036
3061
3076
3076
3076
3071
3066
3066
3206
3306
3236
3151

Ic = 50mAdc, Condo D
VCE = 120Vdc, VBE = 0, Condo C
VCE = 120Vde, VEB = IVde, Condo A
VCE = 80Vde, Condo D
VCB = 120Vdc, Condo D
VEB = 8Vdc, Cond.-D
Ic = lAde, VCE = 5Vdc
Ic = 0.5Adc, VCE = 5Vde
Ic = O.IAdc, VCE = 5Vdc
Ic = 1Adc, 'B = O.lAdc
Ic = 1Adc, IB = O.lAdc, Condo A
Ic = IAdc, VCE = 5Vdc, Condo B
Ic = O.lAde, VCE = 30Vdc, f = 1kHz
Ic = O.1Adc, VCE = 30Vdc, f = 10M Hz
VCB = 20Vde, 'E = 0, f = 1MHz

Adc
mAdc
mAdc
mj
mj

B-9
B-9
B-9
B-5
B-6

-

100
100
20

uAdc
uAdc
uAdc

A-4
A-4
A-4

3041
3041
3061

VCE = 120Vdc, VBE = 0, Condo C
VcE =120Vdc, VEB = 1Vdc
VEB = 8Vdc, Condo D

-

-

A-4

3076

Ic = 0.5Adc, VCE = 5Vdc

Min.

Max.

BVcBO

150

BVCEO
ICES
ICE)(
ICEo
ICBO
lEBO
hFE
hFE
hFE
VCE (sat)
VBE (sat)
VBE
hfe
fr
Cob
GJ_C

100

-

1.0
1.2
1.2
160
70
160
2.5

'ls/B
Is/B
Isis
EsiB
Es/B

2
200
25
20
80

,-

150'C
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current

ICES
ICE)(
lEBO

-

-55'C
D.C. Current Gain (Note 1)

hFE

20

25'C
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note 1)
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Base-Emitter Voltage (Note 1)
A.C. Current Gain
Gain-Bandwidth Product
Output Capacitance
Thermal Resistance
100'C
Forward-Biased Second Breakdown
Forward-Biased Second Breakdown
Forward-Biased Second Breakdown
!Jnclamped Inductive Sweep
Clamped Inductive Sweep

-

40
40
40
0.1

-

40
10

-

MIL-STD-750

Units

Symbol

Test

5
5
10
5
2
120
120

-

-

Vdc
Vdc
Vdc

-

MHz
pf

°dw

Test Conditions

VC[ = 15Vdc, t = 60 sec, see curve
VCE = 57Vdc, t = 60 sec, see curve
VCE = 100Vdc, t = 60 sec, see curve
Ic = 2Adc, L = lOmh
Ic = 2Adc, L = 40mh, VcI • mp = 150V

Note: 1. Pulse width = 300ps; duty cycle $ 2%.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-12

PRINTED IN U.S.A.

JAN & JANTX 2N2151
Unclamped Reverse Bias
Second Breakdown

Forward Bias

Safe Operating Area

10 n r . - - , - - - - , , - - - , - - - - , - - - - - r - - - - ,

10

Tc =100'C

~

5:
f-

~

'"'"
'-'
'"0

::J

~

0

'-'

.2
.1

f---/

t"
ms
Duty Cycle

._
=50%

t,,-lms
Duty Cycle

._
=10% f-----/

X1\/

/

K\

~

\

I
.E

•

~

DC
.5

l"'"
~ "-

05
.02
.01

.01 "-----'------'-----'------'-----'-----'
50
100
10
20
Vee - COLLECTOR TO EMITTER VOLTAGE (V)

200
le'- COLLECTOR CURRENT (AI

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

D.C. Current Gain

10

200

--- --

100

5:

;;:

UJ

Cl

'":::>'"

TJ

t.)

~

2oo"C

/""

UJ

'"'":::>

'"

l-

20

t.)

t.)

0

25'C

so

IZ

0

UJ
...J
...J

V

z

IZ

150'C

..-

-SS'C

........

VeE = SV

~
-.............

~

'\

U

ci

.5

10

1

t.)

~

I

'"

_u

.2

.1

2

10

2

20

50

100 150 200

.OS

v e • - COLLECTOR TO EMITTER VOLTAGE (V)

Ie -

10

+2.0 ,----,---,-----,,---..,------,-------,
TJ = 25'C



B

-

-'-"=10
I,

~

.S
.2
COLLECTOR CURRENT (AI

Saturation Voltage
Temperature Coefficients

Saturation Voltages

z
o

.1

~ -0.5
:::>

~

~

f---+--+---+---t---j'----I

-1.0

f---+--f----f-:

-1.5

f---+--+---:,j."''-::::.....:.;"

-2.0

i-=J-......"q:::.--i--+--+----j

UJ
Q.

.05

i:i
l-

I
~

.02
.01
.05

.1
Ie -

.2
.s
1
COLLECTOR CURRENT (A)

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

4-13

-2.5 L-__..l--__- L____..l--_-'-_---''---_--'
.05
.2
.5
.1
Ie - COLLECTOR CURRENT (AI

PRINTED IN U.S.A.

JAN & JANTX 2N2151

Switching Speed
Characteristics

Switching Speed
Characteristics

1.0

10

I
"I
Vce =20V

.5

..
'0

c
0

Ie -

I B1 =-I 82

.

.2

c.>

II!

ec.>

Storage--;;;;;;

'0
C
0

c.>

25'C-

II!

ec.>

.1

~

~

w

w

::;: .05

::;:

;::

.5

150'C

;::

r--..

r-- -...........[X

--V

Fall time
25'C

.2 t--

.02

=1O

ISO'

b:::::::::

V

~

--

V

.1

.5
Ie -

COLLECTOR CURRENT (Al

Ie -

Therma I Response
Duty cycle
.5
.2

IZ
w
-w

.2
.1

~

~~
~~
I-w

.05 1--.02

w::;:
N_
::::;",

....
::;::;

.02

0:0:

.01

.1

On.

Ow
ZJ:
II...:.

-~§ ~

f-- eI-- I - l- .....- ~
I:?
f-- J.--

.....- ~

./

~ t:::

V

0.5

~~

COLLECTOR CURRENT (Al

Switching Speed Circuit

,.....

Vee =40VDC

J-:::: r:::; V
V

24V

OJ-Cit)

Single Pulse

= r lt) •

R.=--181 +1B.Z

0J-c

Pulse width = 2~s
Duty cycle = ";;2%
Source Impedance
=500

9 J _e = 3.3'C/W
.005
.002

R,

=!!.I"

V.. =-4VDC
.001
.01

.02 .05 .1

.2

.5

1

2

10 20

50 100 200 500 1000

TIME (milliseconds)

UNITRODE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064 '

4-14

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N2880
JAN, JANTX, & JANTXV 2N3749

·POWER TRANSISTORS
5 Amp, 80V, Planar, NPN

DESCRIPTION

FEATURES
•
•
•
•

Unitrode power transistors provide a unique
combination of low saturation voltage, high
gain and fast switching. They are ideally
suited for power supply, pulse amplifier and
similar high efficiency power switching
applications.

Meets MIL-S-19500/31S
Collector-Base Voltage:
Fast Switching: t r • t f
300nSec max
Low Saturation Voltage: O.2SV max @ lA

=

nov

ABSOLUTE MAXIMUM RATINGS

. nov
....... sov

Collector-Base Voltage, VC80
Collector-Emitter Voltage, VCEO
Emitter-Base Voltage, VE80
D.C. Collector Current, Ic
Power Dissipation
25·C Ambient
lOO·C Case
'Operating and Storage Temperature Range .

..................... 8V
....... SA

... ... 7!N
..... ........... ..•...•.
....... 30W
........... -6S·C to +200·C

MECHANICAL SPECIFICATIONS
JAN, JANTlC, & JANTXV 2N2880

F$~G:}
:
..

EMITTER

_?

H

BASE
COLLECTOR

A
B
C
D
E

INCHES
400- 455
090- 150
.320- 468
570 763
318 380

F

055 ±

G
H

424-.437
185- 215

gig

TO-58

MILLIMETERS
1016-1156
228-3.81
813-1188
1448-1938
8.07-9.65

140±~~t
1077 1110
470546

JAN, JANTX, & JANTXV 2N3749

TO-111

BASE

A
B

C
EMITTER

G
CASE

0
E
F

G
H

J

INCHES
.400 - .455
.090 - .250
.320 - .468
.570 - .763
065 - .090
.313 .318
.070 - .090
.423 - .438
.135 - .215

4-15

MILLIMETERS
10.16 - 11.55
2.28 - 6 35
8.13 - 11.88
14.48 - 19.38
165-228
7.95-807
1.77 - 2.28
10.74 - 11.12
3.43 - 5.46

~UNITRDDE

•

'JAN, JANTX, & JANTXV 2N2880
JAN, JANTX, & JANTXV 2N3749
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
MIL - STD - 750
TEST CONDITIONS

/315

TEST

SYMBOL

MIN.

MAX.

100

Visual and Mechanical

-

-

Collector-Base Voltage
Collector-Emitter Voltage (1.)
Emitter-Base Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current

BVcBO
BVCEO
BV EBO
ICEO
IcEX

110
SO
8

Collector-Base Cutoff Current
Emitter-Base Cutoff Current

leBo
'lEBO

D.C. Current Gain (1.)
D,C. Current Gain (1.)
D.C. Current Gain (1.)
Collector Saturation Voltage (1.)
Collector Saturation Voltage (1,)
Base Saturation Voltage (1.)
Base On-Voltage (1,)

hFE
hFE
hFE
VCEl"l)
VCE ,,,1)

A.C. Current Gain

-

40
40
15

UNITS

METHOD

A-I

2071

See Mechanical Data

3001
3011
3026
3041
3041

Ic 10"Adc, Condo 0
Ic O.1Adc, Condo 0
IE 10~dc, Condo 0
VCE 60Vdc, Condo 0
VCE nOVdc, VEB 0.5Vdc,
Cond,A
VCB SOVdc, Condo 0
VEB 6Vdc, Cond, 0

10

~dc
~dc

A-2
A-2
A-2
A-2
A-2

0.4
0.4

~dc
~dc

A-2
A-2

3036
3061

-

-

A-3
A-3
A-3
A-3
A-3
A-3
A-3

3076
3076
3076
3071
3071
3066
3066
3206

120

Vdc
Vdc
Vdc

Sub

grOUP

=
=
=
=
=
=
=
=
Ic = 50mAdc, VCE = 5Vdc
Ic = lAde, VCE = 5Vdc
Ic = 5Adc, VCE = 5Vdt
Ic =1Adc, IB = O.1Adc
Ic = 5Adc, IB = 0,5Adc
Ic = lAde, IB = O.lAdc
Ic = lAde, VeE = 2Vdc

0.25

VBElon)

-

1.2
1.2

Vdc
Vdc
Vdc
Vdc

hFE

40

120

-

A-4

Gain-Bandwidth Product
Output Capacitance
Switching Parameters
Delay Time
Rise Time
Storage Time
Fall Time

fT

20

A-4
A-4

3306
3236

1.7
300

ns
ns
"s
ns

A-4
A-4
A-4
A-4

-

Thermal Resistance

9 JC

-

MHz
pf

3,33

'C/W

C-1

3151

IsiB

5

Adc

B-5

3051

Is/B

SO

mAde

B-5

3051

EsiB

12.5

-

mj

B-7

-

EsiB

12.5

mj

B-6

3053

Es/B

12.8

-

mj

B-6

3053

150'C
Collector-Emitter Cutoff Current

IcEX

-

50

~

A-5

3041

VCE = BOVdc, VEB = O.SVdc
Condo A, TA = 150'C

-65'C
D.C. Current Gain (1,)

hFE

15

-

-

A-5

3076

Ie = lAde, VeE = 5Vdc
TA = -65'C

l00'C
Forward-Biased Second
Breakdown
Forward-Biased Second
Breakdown
Clamped Reverse-Biased
Second Breakdown
Unclamped Revers. -Biased
Second Breakdown
Unclamped Reverse-Biased
Second Breakdown

Note 1. Pulse Width

VBElsat)

Cob
td
tr
t,
tf

1.5

120

150
60

300

Ic = 50mAdc, VCE = SVdc,
1KHz
Ie = lAde, VeE = 10Vdc, f = 10MHz
VCB = 10Vdc, IE = 0, f = 1MHz

f

=

}

See Switching Speed Circuit

VCE = 6Vdc, t= 60Sec,
Te = 100'C
VeE = 8OVdc, t = 60Sec,
Te = 100'C
Ie 5A, L = 1mH, VClamp = nov,
Tc = 100'C

=

=

Ie = 5A, L 1mH
Base Open
Ie = 1,6A, L = 10mH
Base Open

= 3OO,,5ec, dUly cycle"" 2%

UNlTRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064
'

4-16

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N2880
JAN, JANTX, & JANTXV 2N3749

Unclamped Reverse Bias
Second Breakdown

Forward Bias
Safe Operating Area
10

~

g

"

D.C.

>-

iii
a:

10
"

~

~~ 1;;10 = 50% -

a:
:::>
u
a:

~u~5;;10 = 10% -

~

.2

...........

AI

>..

Ui'

.""c i
g

/\ \

UJ

;::tJ

.2

0

.1

:>

:!:

-" .05

Ie
Jill =-1 11 =10
e"8110

.............

•
-----

0.

~v

............
"- ........ ............

~

.os

...J

--

..........'IJe"

1\'"
~<>
"" v"'<> .... $v

.S

tJ
Z

'\

u
I

Te = 100'C

\1\

~"

'Y'\

"- ~

\\
\\

Tc=loo'C

02

.02
.01

10

20

50

80 100

1
2
3
4
S
Ie - COLLECTOR CURRENT (A)

Vo< - COLLECTOR TO EMITIERVOLTAGE (V)

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

6

D.C_ Current Gain

2N2881J..2N3749
500

20

Ve

,=5V

80V
10

$

!zUJ

l

S

0:
0:

;(

~

TJ

0:

9

100

I-

z
UJ
0:
0:

200°C

:>

2

50

tJ

d

I

8

.eft.

I

.5

V
/'" V

2S'C

V

-:::;s'c

,/

/"

Q

...J
...J

_0

150'C

(!I

:>
tJ

200

z

nov

.........

r--.. ~
r-...::

20

~~

10

S
.01

.2
10

S

so

20

80100

.02

200

.05.1
.2
.5
1
2
Ie - COLLECTOR CURRENT (A)

5

"
10

Ve,-COLLECTOR TO EMITTER VOLTAGE

Saturation Voltage
Temperature Coefficients

Saturation Voltages
10

2

TJ =2S'C
Ie
1'=10

~
UJ
(!I

~
0

>

I

1.0

vIE

(sat)

Z

.2

:>

.1

;:
«
0:
I-

«
III

.OS
.02

/'

~~1J.\)

--

.01
.01

f.--""""

.02

~
~

..1-'..-

.S

0

:>

/

I

2

~

I

V

V

U

I~

~

UJ

0:

-.S

0:

-1

~

~

.S

2

S

-2.5
.01

10

e•

I "";""'---

.....--:r

(;.'1/,.- ........

~-.02

.05

.1

.2

.5

2

5

10

Ie - COLLECTOR CURRENT (A)

Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6S40
TWX (710) 326-6S09 • TELEX 95-1064

/

~S'C/
_5S'C to

_ ===- .--.
(;.'l/
>r'/.'J'

ill-l.s
I-

'l.O'\:~~ ~

8

'~

Fall Time

Vy

::::::-- I'-....

-

.1

1

.5

2S'C

l~'C

0

::;:

I--

~SO'C I

2

0

0

NOTES:
1. Ie AS lA, 'B. AS -Isz

.2

.5

1

2

10 20

50 100 200 500 1000

TIME (milliseconds)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-18

t::::s lOOmA
2. The values of collector current and base
current are nominal. The actual values will
vary slightly with transistor parameters.

PRINTED IN U.S.A

JAN, JANTX, &JANTXV 2N3418
JAN, JANTX, & JANTXV 2N3419
JAN, JANTX, & JANTXV 2N3420
JAN, JANTX, & JANTXV 2N3421

POWER TRANSISTORS
3 Amp, BOV, Planar NPN

FEATURES

DESCRIPTION

•
•
•
•

Unitrode power transistors provide a unique
combination of low saturation voltage, high
gain, and fast switching. They are ideally
suited for power supply, pulse amplifier and
similar high frequency power switching
applications.

Meets MIL-S-19500/393
Collector-Base Voltage: up to 125V
Peak Collector Current: SA
High Power Dissipation in TO-S:
lSW@ Tc = lOO·C
• Fast Switching

ABSOLUTE MAXIMUM RATINGS
JAN, JANTX, & JANTXV

JAN, JANTX, & JANTXV

2N341B
2N3420

2N3419
2N3421

Collector-Base Voltage, VeBo
Collector-Emitter Voltage, VCEQ
Emitter-Base Voltage, VEBO
D.C. Collector Current, Ie
Peak Collector Current, Ie
Power Dissipation
25·C Ambient
lOO·C Case
Operating and Storage Temperature Range

. 125V
.... 80V
... 8V
.... 3A
.5A

.... 8SV.
60V
. 8V..
3A
SA.

l.OW

l.OW
15W

lSW
-65·C to +200·C.

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N3418-2N3421

fo- C

I

T

1i E

D

l

iTf~:

e---·
- _. . .

I
--,--

F

A
B
C
0
E

INCHES
335 370
305- 335
240 260
15 MIN
010 030

gg1

F

OI7±

G
H
J

200
100
03l± 003
029 .045
100

K

L

4-19

TO-5

MILLIMETERS
851 9.40
775 851
6.09 660
3810 MIN
254 762

432

±

.g~~

508
2.54
787± 076
736-114
254

~UNITRDDE

•

JAN, JANTX, & JANTXV 2N3418-2N3421
ELECTRICAL SPECIFICATIO.NS (at 25°C unless noted)
TEST

SYMBOL

Visual and Mechanical

-

Collector-Emitter Breakdown Voltage (1.)
2N3418, 2N3420
2N3419, 2N3421
Collector-Emitter Cutoff Current
2N3418, 2N3420
2N3419, 2N3421
Collector-Emitter Cutoff Current
2N3418, 2N3420
2N3419, 2N3421
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current

BV cEO

D.C. Current Gain (1.)
2N3418, 2N3419
2N3420, 2N3421
D.C. Current Gain (1.)
2N3418, 2N3419
2N3420, 2N3421
D.C. Current Gain (1.)
2N3418, 2N3419
2N3420, 2N3421
D.C. Current Gain (1.)
2N3418, 2N3419
2N3420, 2N3421
Collector-Emitter Saturation Voltage (1.)
Collector-Emitter Saturation Voltage (1.)
Base-Emitter Saturation Voltage (1.)
Base-Emitter Saturation Voltage (1.)
Gain Bandwidth Product
Output Capacitance
Switching Parameters
Turn-on Time
Turn-off Time
100°C
Forward Biased Second
Forward Biased Second
Forward Biased Second
Forward Biased Second
2N3418, 2N3420
2N3419, 2N3421

Breakdown
Breakdown
Breakdown
Breakdown

Unclamped Reverse Biased
Second Breakdown
Clamped Reverse Biased Second
Breakdown
150°C
Collector-Emitter Cutoff Current
2N3418, 2N3420
2N3419, 2N3421
-55°C
D.C. Current Gain (1.)

ICEX
IcEO

MIN.

hFE

UNITS

A-I

2071

See Mechanical Data

A-2

3011

Ic

A-2

3041

A-2

3041

A-2
A-2

3061
3061

VES 0.5Vdc, Condo A
VCE 80Vdc
VCE 120Vdc
Cond.D
VCE 45Vdc
VCE 60Vdc
VES 6Vdc, Condo D
VES 8Vdc, Condo D

A-3

3076

=
=
=
=
=
=
=
Ic = 100mAdc, VCE = 2Vdc

A-3

3076

Ic

= lAde, VCE = 2Vdc

A-3

3076

Ic

= 2Adc, VCE = 2Vdc

A-3

3076

Ic

= 5Adc, VCE = 5Vdc

3071
3071
3066
3066

-

60
80

-

Vdc
Vdc

-

0.5
0.5

!lAde
!lAde

-

5.0
5.0
0.5
10

!lAde
!lAde
!lAde
!lAde

20
40

-

-

20
40

60
120

-

15
30

-

-

10
15

-

-

0.25
0.5
1.2
1.4

Vdc
Vdc
Vdc
Vdc

A-3
A-3
A-3
A-3

-

hFE
hFE
hFE

-

-

-

-

-

TEST CONDITIONS

METHOD

-

-

MIL - STD -750

/393

Sub-

group

-

-

IESO
IESO

MAX.

= 50mAdc, Condo D

= lAde, Is = O.1Adc
= 2Adc, Is = 0.2Adc
= lAde, Is =O.lAdc
= 2Adc, Is = 0.2Adc
3306 Ic = O.lAdc, VCE = lOVdc, f = 20MHz
3236 Vcs = lOVdc, IE = 0, f = 1MHz
- ~ Ic = lAde, I" = -I" = O.1Adc

VCEI ,,!)
VCE (,,!)
VBE (,,!)
VSE (,,!)

0.6
0.7

fT
Cob

-

160
150

MHz
pf

A-4
A-4

too

-

0.3
1.2

!lS
!lS

A-4
A-4

3
1
0.4

-

-

-

Adc
Adc
Adc

B-6
B-6
B-6
B-6

3005
3005
3005
3005

185
120

-

-

mAde
mAde

Eslb

45

-

mj

B-7

-

Es/b

180

-

mj

B-8

-

A-5

3041

-

-

50
50

!lAde
!lAde

VES
VCE
VCE

10

-

A-5

3076

Ic

toff

Is/b
Is/b
Is/b
Is/b

40

ICEX

hFE

-

-

Ic
Ic
Ic
Ic

See Switching Speed Circuit

=
=
=
=
=

=
=
=
=

=
=

=
=

=
=
=

VCE 5Vdc, t
60sec, TC 100°C
VCE 15Vdc, t 60sec, TC 100°C
VCE 37Vdc, t 60sec, TC 100°C
t 60sec, TC 100°C
VCE 60Vdc
VcE =80Vdc

Ic 3Adc, L lOmH,
Base Open
Ic 3Adc, L 40mH,
V clamp Rated Vcso

=

= 0.5Vdc, Condo A, T = 150°C
= 80Vdc,
= 120Vde,
A

= lAde, VCE = 2Vdc, T = -55°C
A

Note: 1. Pulse width:::: 300p,Sec, duty cycle:::;: 2%.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-20

PRINTED IN USA.

JAN, JANTX, & JANTXV 2N3418·2N3421

Forward Bias
Safe Operating Area

Unclamped Reverse Bias
Second Breakdown

10

5:
I-

10

~

2

Z

'"a:a:

"a:
0

'"
..J
..J

D.C.
.5
.2

0

.1

I

.05

.~

1'--.,"'" k

0

I0

.

pUlsl Widlh =11mS Duly Cy~'e = 50%

Tc = 100'C

g
'"z0

~I\

.2

"~

.1

0

I

2N3419,21

1

.01

~~"'"

'"'"

\

t-

It :::::

II

~

"'- ~
V

-411

.05

2N3~18,20-1-

.02

M T C = 100'C
~
_ _ Ie
"6 0
111-12-10

\

\

.5

«

I0

1"\

\

\

~"

-

_0

2

r::

~~
'\

0

\

..J

= ~

.02

.01

o

5
1020
506080
VeE - COLLECTOR TO EMITTER VOLTAGE

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

1

2
3
4
S
'e-COLLECTOR CURRENT (A)

O.C. Current Gain Vs. Collector Current
180

10

VeE =2V
160

5
TJ

5:

::;;

200°C

z
;;:

I-

Z

'"a:a:

"a:

C>

2.0

I-

1.0

t;

'"
..J
..J

0

2N3418,20 - I
2N3419,21-

I

'"a:a:

100

0

80

I

60

_0

0.2

~

r-

40

--

----

.05

51020
506080
VeE - COLLECTOR TO EMITTER VOLTAGE (V)

.5

>

...

-

-

t--5~~
-i_
2

.5

.2

.1

.2

+.5

f--1-.....L

o

~

-.5 f--1--+-'-t-+-j--j--I-r-

"a::~ -.1
'"
0.

~
.05

1.5

'"o

,/

.02

-- ~

2S'C

z

...'"~

/'

.1

.01
.005 .01

~

~ 1.0 f--1--+-'-t-+-l-

/

.2

•02

~

--

V" (sal)

.05

-- -

-55'

Q

Ie
"=10

0

150'C \ -

1- ....

Saturation Voltage
Temperature Coefficients

TJ = 25'C

~

"-

2N3420,21

Ie - COLLECTOR CURRENT (A)

10

'"«C>

r-

.1

Saturation Voltage

~

2N3418, 19

25'C

.- 1--

o
1

-.......-

20

0.1

-- -

120

"0
ci

0.5

0

I~

!-~

z

0

0

"...-

140

~-1.5

f--1--'-.

l-

I
~

f-4='=jI--+-t-+--IP....
.01

.5

.02

.05

.1

.2

.5

2

5

Ie - COLLECTOR CURRENT (A)

Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

-.2

4·21

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N3418-2N3421

Switching Speed
Characteristics

Switching Speed
Characteristics
10

Vee =20V

Vee=120V

.5
181 =-1 12
~
'tI

"u0

~
u
g
UJ

::!

;:

1=----+ I

.2

rise ISO"C

r--

Stor.age tl
age

.05

FaU

.2

.5

2
Ie -

5

0 1 J.5

.5

Q.2

I.2

Ui~

~~

.1

c ...

.05

UJ:;:

!::!...J...J

«

::!:;:
Zl:

Ie -

O;!.-

-

~~

::; ~

"7'

t,

-

25"

O.~

1
COLLECTOR CURRENT (A)

Switching Speed Circuit

-

t-20.3Vde

20U

~

-IV

.01

9 J...cltl
.005

= rill· 9 J -C

!lJ.e -

i

.002

n

116V

,/

II'-~

i'--

time t f 150 0

~

~ingle PUlse
.02 . . . . . . 1/

0:0:

OUJ

~

-~ 1---

-1-

.5

COLLECTOR CURRENT (A)

Thermal Response

~S

c_ I---

t·

.1

.01

UJ

.lI

'1
Fall lime

Z

Ie -

=10

~
~c~ k

.1

.02

I.

Pulse width

2115

Duty cycle = .-: 2%
Source Impedance

6.1"C/W

I I

o-.......-IIJ\/'v__...- I

50~!

I

-6.4Vde
.001

.01 .02 .05 .1

.2

.5
1 2
5 10 20
TIME (milliseconds)

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

50 100 200 500 1000

4-22

PRINTED IN U.S.A.

POWER TRANSISTORS

JAN,
JAN,
JAN,
JAN,

5 Amp, SOY, Planar NPN

JANTX,
JANTX,
JANTX,
JANTX,

& JANTXV 2N3996
& JANTXV 2N3997
& JANTXV 2N3998
& JANTXV 2N3999

FEATURES

DESCRIPTION

•
•
•
•
•

Unitrode power transistors provide a
unique combination of low saturation
voltage, high gain and fast switching. They
are ideally suited for power supply pulse
amplifier and similar high efficiency' power
switching applications.

Meets MIL-S-19S00/374'
Collector-Base Voltage: Up to lOOV
D.C. Collector Current: SA
Fast Switching
Beta Guaranteed at 3 Current Levels

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage, VCBO
Collector-Emitter Voltage, VCER .
Emitter-Base Voltage, VEBO
D.C. Collector Current, I". . ....................... .
Peak Collector Current, Ie ...
Power Dissipation
25°C Ambient .
100°C Case.
Operating and Storage Temperature Range

.............. lOOV
.. ... 80V
8V
.. ............ 5A
.. ..... lOA
... 2W
...30W
..-6SoC to 200°C

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N3996, 2N3997

A
B

C
10-32. NF-2A
THREAD

EMITTER

G
CASE

D
E
F
G
H
J

INCHES
.400 - .455

MILLIMETERS
10.16 - 11 55

.090 250
.320 - .468
570 .763
.065 - 090

2.28 813
14.48 1.65 7.95 177

313

318

WO -

090

.423
135

.438
.215

10.74

343

6.35
11.88
19.38
2.28
8.07

2.28
11.12
5.46

JAN, JANTX, & JANTXV 2N3998, 2N3999

A
B
C

0
E

INCHES
400 455
090 150
320- 468
570- 763
31B 380

gig

F

055 ±

G

424 437

H

185- 215

4-23

TO-111

T0-59

MILLIMETERS
1016 11 56
228-381
8.13 11 88
1448-1938
807-965

140 ±

~~

10 77-1110
470-546

~UNITRDDE

II

JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N3998, 2N3999
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)t
2N3996*
2N3998*
Symbol

Test

Min.

2N3997*
2N3999*

Max.

Min.

Max.

Units

D.C. Current Gain

hfE

30

-

60

-

D.C. Current Gain (Note 1)

hfE

40

120

80

240

D.C. Current Gain (Note 1)

hfE

15

-

20

D.C. Current Gain, -55'C (Note 1)

hfE

10

-

20

-

Collector Saturation Voltage (Note 1)

VeE (sat)
VeE (sat)

-

0.25

. Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)

V" (sat)

0.6

Base Saturation Voltage (Note 1)

V" (sat)

Collector-Emitter Breakdown Voltage
(Note 1)
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current

le=5A, Ve,=5V

-

lc=lA, Ve,=2V
lc=lA, 1.=100 mA

V

2

V

le=5A, 1.=500 mA

1.2

0.6

1.2

V

lc=lA, I.=ioo rnA

-

1.6

-

1.6

V

le=5A, 1.=500 mA

BVeEO

80

-

80

-

V

10=50 mA, 1.=0

hBO

-

0.2

-

0.2

p.A

V,,=5V, 10=0

lEBO

-

10

p.A

V,,=8V,le=0

5

"A

Ve,=90V, R,,=O

10

-

10

10

"A

Ve,=60V, 1.=0

50

-

50

"A

Ve,=90, R,,=O

150

-

150

pf

Ve.=lOV, 1,=0, f=1 MHz

-

-

le=lA, Ve,=5V, f=10 MHz

0.3
2

p's
p's

le=lA
Ib,=100mA, Ib,= -100 mA

ICES

I cEo

-

Collector Cutoff Current, 1SO'C

ICES

-

Collector Capacitance

Cob

-

A.C. Current Gain (High Frequency)

hr.
toff

5

4

to,

-

2

0.3
1.5

Notes:
1. Pulse width = 3001'5; duty cycle 52%.
t All values in this table are JEDEC registered.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

le=lA, VeE=2V

0.25

Collector Cutoff Current

Switching Speeds

10=50 mA, VeE=2V

-

Collector Cutoff Current

Turn-on Time
Turn-off Time

-

Test Conditions

4
-

-

*Also applicable to
JAN and JANTX versions

4·24

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N3998, 2N3999

Unclamped Reverse Bias
Second Breakdown

Forward Bias
Safe Operating Area
10

"-

g
>-

.........

~

~u~yl:le= 50% -

Z

"'

0:
0:

.5

:J

'-'

t p -O.5ms

0:

/

N
X"

~

.

~

.~

.2

~'"
g
'"z0

\

.2

0
~

.1

.05

I

"-

'B.

I

~"'0~"
"- \ /;.",1 I'..........
-'"

"',~"

Kr--., . . . . . r--.

.05

.........

.02

.01

.01
10

v" -

50

20

80 100

o

1

2

I'--

4

5

Ie - COLLECTOR CURRENT (A)

COLLECTOR TO EMInER VOLTAGE (!I)

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

D.C, Current Gain
2N3996-2N3998
SOO

20

I

200

...~

z

;;:

Z

'"0:0:

...'"

TJ ~ 20QoC

o

g

'"0:0:

2

:J
0
0

I

8
I

V

-;,

50

V

~ 25'CI

I"'--. ~

V

-;,

~ -SS~C

r--..

0

..J

r---..

100

z

::>

.2

I

Ve,=SV

10

0:

II

~o%-

..J

.02

Te= 100'C
Ie

== -182 == To

'"

\ '\

.5

~

0
:J

.1

'-'
I

\ 1\

2

I::

"~

Duty Cycle = 10% -

0

\\ 1\

' " T, = 100'C

"'"

D.C

10

20

T J = 150'C

L ..J.

V

V

........

'\

~G

I'-- .........

~

~

.S
10

5
.01

.2
Ve , -

5
10
20
SO 80
COLLECTOR TO EMITTER VOLTAGE

.02

.05 .1
.2
.5
1
2
Ie - COLLECTOR CURRENT (A)

D.C. Current Gain
2N3997-2N3999

l-Lc
J

200

...'"
'"

100

V ~J=~S'C
,/

z

0:
0:

:J
0

I
~

/'

so

U
ci

10

Saturation Voltage
10

SOO

z
;;:

S

V

I
Ve,=SV

-.......

~

V ~J=~55'C-""'" ~ ~
-.......
'\
V
r----.
"-..,

'"C1
~

§!

10

.OS .1
.2
.S
1
2
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

VIE (sat)

1.0

.S

Z

o

~.

~
0:

::>

~

"

.<:

.02

1

Ie

I- 1'=10

20

.01

TJ =2S'C

.2
Ve , (sat)
1
.05
.02
.01

10

-.01

4-25

............

.02

... V

V
./

V

J

.2
.5
1
2
.05 .1
Ie - COLLECTOR CURRENT (A)

...tv

10

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N3998, 2N3999

Saturation Voltage
Temperature Coefficients

Switching Speed
Characteristics

2

?

;-

~=10
I,

1.5

~

'"

1.0

(3

.5

I-

Z

<§l0(j

W

;;:

~

'/.,>o(j
~c'

"w

w
0::
:>
I'Jc,

I '/.<5
,><"1
t>~

V .....

l-

I

....,

J

c

l--:; ~

-2.0

Ie
1,,=1"=10

I I

.2

0

.,"u
l!

Rise T1ime, tr

.1 f - - - 25°C

u

g

a--

w
:;; .05

'/.,,:;C
j,SoC\O/

--::pp

II.

:;; -1.S

V

_550C to 25°C

-1

w

V

L--I;.zr;<§l"V
~

0

<>

Vee =20V
.5 I-----

7'

>=
.02

--

~
r-- r- I--

b?

1/

V

++-

...I--'

I--

liol
-2.5
.01

.01
.02

.05.1
.2.5
2
Ie -'- COLLECTOR CURRENT (A)

5

2

1

10

Vcc=20V

r-

....,

r

Duty cycle
.2
1500C

V
.5

250C

.2

I---

.2

Zz

.1

I-w
w:;;
N_

.05

~[3

1-)"

-I--.: '"

]~r::> ~ ~ Vi,.-

Fall Time 2SoC

>=

Iz
w

u;~

Ktorage Time--t:----

0

.,"u
l!u
g

0.5

.5

Ie

I" = 1111 =

c

~~~

10

Thermal Response

I

10

5

Ie - COLLECTOR CURRENT (A)

Switching Speed
Characteristics

w
:;;

~~

2S'C

Delay Time

>



.5

OJ

I
~ Duty Cycle

1OOpSee, 10% Duty Cycle

8

II

\\ 1\

.~
c:

~~

.2

...J
...J

I~

I

1ms~e, 10% D~ty CYCI~

0:

§w

~

10

j10p~ee,

.1

~

jZ...,,'" t--..
~

I



~

"z.... 100

200°C

'"0:

OJ

0:

0:

::> 50

t

OJ

w

cJ
ci

o

I

...J
...J

OJ

20

--

IJ~ f--

;;;:

W
0:
0:

•

.......... ~ase opeln

...J

•02 I- T,

~ 10JOC I

~ -='82 = 'CliO -

1'1

.1

z
I

i"'--

_u· 05

'"

\.

~

.2

o

IT

1\

.5

u
::>

1\

...............

VlJ= 2l:s-f----

~~

..............

\
I"-

l-

I

_u .5~--~-----+----+_---+-----1--t_1

10
5

.01

.02

VeE-COLLECTOR TO EMITTER VOLTAGE (V)

Saturation Voltage
Temperature Coefficients

Saturation Voltages
10

r-

P

~,=25lc

~
w .5

"!:i«
0

>
.1

-~

.02
.01
.01

.02

lell, ~ 10

L

V

~

.05.1
.2
.5
1
2
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

S
::'z!

-

~

.2

.05

2

;- 1.5

la= I C/IO

VBEISATI

10

.OS .1
.2
.5
Ie - COLLECTOR CURRENT (A)

V

/

I

w

t:i

ii:

./

.S

"-

'"oOJ

/

'"

0:

::>

~

0:

f-L::.V e:...-

..-

/"
..-/
-f-5SoC to 25°C

-.5

....
I
~

/
f:j.V BE

-2

-2.5
.01

10

4-29

/

-/- f----

F::
-~
--

.2

Z

-v::-::;-~§@

"'
.2
iii",
ZO

~ ~ .1

f-O

8N::;;~

.05

:J~
~ « .02

0:::;;

offi
Z:I:

.01

If-

€

2-

Ie -

.0

....-

....-::

-:::::

./

,./
/'

S

10

COLLECTOR CURRENT (A)

Switching Speed Circuit

.S

-- -

~
.oy

-

2

1

Therma I Response

f-

t--- ':> 

DISSI~A.'\

AT PESIREO OPEI'tATING VOLTAGE. DER ...JE
TION CURRENT LIMIT AND 15. CURRENT LIMIT FROM
is'C SOAR CURVE

20

"
0.3

L-.L....I.I-JI....lII.J..,u111-,--...1.1L-,--,-I...L..L.J..1.1L--J
2

10
VeE -

so

20

DASH LINES ON SOAR CURVES ARE EXTENSIONS OF

DISSIPATION LIMITS FOR TEMPERATURE DERATING

PURrOSESol

o

100 200

i'- .......

~~

z

'"0:0:

"

o

COLLECTOR VOLTAGE (V)

40
Te -

Saturation Voltages

'\
1,\

I
I
J
L
120
160
80
CASE TEMPERATURE (OC)
I

200

DC Current Gain
SOO

II
lell, = 10

5~OC

~

'"~

200

I.

VBe

k,:;;

(SAT)

,

z

!iII!I

150°C

;;:

....z"

100

25°C

UJ

150°C
0.5

~

o

>

V

0.2

0.1

50

VeE (SAT)

£

20

~ ...... 1/

_55°C

f.- ro-

"g

V

\~

:li::>

~

_f-

10

_~,?C

~

1\

VeE =2V

.05
0.2

0.5
Ie -

10

20

0.2

COLLECTOR CURRENT (A)

0.5
Ie -

10

20

COLLECTOR CURRENT (A)

Turn-Off Time

Turn·On Time
1000

SOD

.

200

"l~

~-

"

I,

~

'";::

'" 100

:;;

:;;

;::

II10
0.2

0.2

"'-!.

= IC/IO

-

:t;-- i'
.......

~

~

Vee = 30V
lSI

-

0.5

so
20 I--

r-....

.
..3

r--....

-

=laz=l c/IO
TJ = 25°C
'BI

/

'\

Vee = lOV

0.1

"

T J = 25°C

I I II II
0.5
Ie -

10

.05
0.2

20

UNITRODE CORPORATION' 5 FORBES ROAD.
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

0.5
Ie -

COLLECTOR CURRENT (A)

4-34

1

2

5

10

20

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

POWER TRANSISTORS

2N5552

5552·4

10 Amp, 120V, Planar NPN

FEATURES
• Collector-Base Voltage: up to l20V
• Peak Collector Current: lOA
• Fast Switching
• Beta Guaranteed at 3 Current Levels

DESCRIPTION
Unitrode power transistors provide a
un ique combination of low saturation
voltage, high gain and fast switching. They
are ideally suited for power supply pulse
amplifier and simi lar high efficiency power
switching applications.

ABSOLUTE MAXIMUM RATINGS
........................... l20V
... 80V

Collector-Base Voltage, Vc'o
Collector-Emitter Voltage, VCEO .
Emitter-Base Voltage, VE,o
D.C. Collector Current, Ic .
Power Dissipation
25'C Ambient
lOO'C Case ....... .
Operating and Storage Temperature Range ....

.7V
. lOA

..... l.25W
....... 15W

...... -WC to 200'C

MECHANICAL SPECIFICATIONS
2N5552

I-cr

D

1

A
B
C
0
E

r=r=~1
T 1i-- - I -

I+
B

E

--- --

-- - --

F
G

F

H
J

K
L

THREAD

017±OO2
.001
200
100
.O3l±.OO3
029-.045
.100

MILLIMETERS

851-940
7.75-851
6.09-660
3810 MIN
254-762

432 ± .g~~
5.08
2.54

787t 076
736-114
254

-rr- +:j
r=;:~~~~~~~[tfE:
[JF
fr' ~COlLECTOR
B

10-3' • NF-'A

INCHES
.335 370
305- 335
240- 260
15 MIN
.010- 030

I-- A
c
t\
1-n+~111111=1111111n:d1111!1 ~I
_

D

t...

TO-5

5552·4

TO·5 (Stud)

BASE

,,.1 ,

•" +

T G

rj

EMITTER

A
B

C
D
E
F
G
H

INCHES
.340 - .360
.315 - .335
.095 - 115
1.5 MIN.
017 ± 001
.337 - 387
.424 437
.200

4-35

MILLIMETERS
8.63 - 9.14
8.00 - 8.51
2.41 - 2.92
38.10 MIN.
.432 ± .0254
957 - 9.83

10.77 - 1110
5.08

~UNITRODE

•

2N5552 5552-4
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)t
Test
D.C. Current Gain
D.C. Current Gain (Note 2)

Symbol

Test Conditions

Min.

Max.

Units

hfE

40

250

-

Ie = O.5A, VeE = 2V

hfE

50

150

-

Ie = 5A, VeE =5V

D.C. Current Gain (Note 2)

hfE

30

-

-

I, = lOA, VCE = 5V

Collector Saturation Voltage (Note 2)

VCE (sat)

-

0.5

V

Ie = 5A, I, =0.5A

Collector Saturation Voltage (Note 2)

VCE (sat)

1.0

V

Ie = lOA, IB = lA

Base Saturation Voltage (Note 2)

VBE (sat)

-

1.3

V

Ic =5A, Ie =0.5A

Base Saturation Voltage (Note 2)

VBE (sat)

-

1.8

V

Ie = lOA, I, = lA

Collector-Emitter Sustaining Voltage (Note 2)

BVCER

120

-

V

Ic = 100mA, RBE = IOn

Collector-Emitter Sustaining Voltage (Note 2)

Vcra (sus)

80

-

V

Ic = lOOmA, I, = 0

Collector-Emitter Voltage (Note 2)

BVCES

120

-

V

Ic = 0.2I'A, RAE = 0

Emitter-Base Breakdown Voltage

BV EBO

7

-

V

IE = lOpA, Ic = 0

Collector Cutoff Current

ICES

-

0.2

ItA

VCE = 120V, RAE = 0

Collector Cutoff Current, 150·C

ICES

-

0.1

mA

VCE = 80, RBE = 0, T = l50·C

Collector Capacitance

Cobo

-

A.C. Current Gain
Switching Speeds

Turn-on Time
Turn-off Time

150

pf

VCB = 10, IE=O, f = 1MHz

h"

3

-

-

Ic = 0.5A, VCE = 5V f = 10M Hz

to"

-

tor'

-

100
700

ns
ns

Ic =5A
Ibl = 250ma I", = - 250ma

Notes:

1. The device may be switched between maximum rated collector current and maximum rated collector-emitter voltage along a resistive
load line provided the switching time is less than 10 microseconds. Switching at low speed through regions of high instantaneous power

dissipation may cause second breakdown to occur, with consequent damage to the device.
2. Pulse width = 300/15; duty cycle ,;;2%.
t All values in this table are JEDEC registered.

Switching Speed Circuit
+25V

.05JI

r

i

G

~

~IIIIUIII;I~~':,"ffi.
!.

'BASE

10· i~RE~~ 2A ' -

COLLECTOR

D
E

INCHES
400 .455
090 150
320- 468
570 763
318- 380

F

055

G
H

424- 437
185- 215

A
B

e

±

gt~

MILLIMETERS
10 16-11 56
2.28 381
8131188
14481938
807965
140

±

'~g1

1077-1110
470-546

2N5659

INCHES
A

B

e

10·32. NF·2A
THREAD

G

EMITTER
CASE

0
E
F

G
H

Collector Isolated from Case.

T0-59

J

400
090
320
.570
.065
313
.070
423
.135

- .455
- 250
- .468
763
- 090
- .318
090
438
215

4-37

TO-111

MILLIMETERS

10.16 - 11.55
228-635
813 - 11.88
14.48 19.38
165 - 2.28
7.95 8.07
1 77 - 2.28
1074 11.12
343 546

~UNITRDDE

II

2NS6S8

2NS6S9

Electrical Specifications (at 25°C unless noted)t
Symbol

Test

Min.

Max.

Units

Test Conditions

D.C. Current Gain

hFE

40

250

-

Ic = 0.5A,

VCE = 2V

D.C. Current Gain

hFE

SO

150

Ic = SA,

VCE = SV

(Note 1)

D.C. Current Gain

hFE

30

-

Ic = lOA,

VCE = 5V

(Note 1)

Collector Saturation Voltage

VCE (sat)

.5

V

Ie = SA,

I, = O.SA

(Note 1)

Collector Saturation Voltage

VCE (sat)

1.0

V

Ic = lOA,

I, =IA

(Note 1)

Base Saturation Voltage

V'E (sat)

1.3

V

Ic = SA,

I, = O.5A

(Note 1)

V'E (sat)
BVCER

1.8

V

Ic = lOA,

I, = lA

(Note 1)

V

Ic = 100mA,

R'E = IOn

Base Saturation Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage

120

BVCES
BVcEO

120

V

Collector-Emitter Breakdown Voltage

80

V

Ic = 0.2"A,
Ic = 100mA,

R'E = 0
IB=O

Emitter-Base Breakdown Voltage

BV EBO

7

V

IE = lO"A,

Ic = 0

(Note 1)

Collector Cutoff Current

ICES

0.2

JlA

VCE = 120V,

R'E=O

Collector Cutoff Current, 150°C

ICES

0.1

mA

VCE = 80V,

Cabo

ISO

pf

Vc , = lOV,
Ic =.: O.5A,

R'E = 0,
IE=O,

T = 150°C

Collector Capacitance

VCE = 5V,

f = 10MHz

A.C. Current Ga i n

Switching Speeds

hie

3

Turn-on Time

too

150

ns

Ic = SA

Turn-off Time

toff

800

ns

Ibl = 2S0mA
Note 2.

f = IMHz

Ib2 = -2S0mA

Notes:
1. Pulse width = 300"S; duty cycle $2%.
2. Measured in saturated switching speed circuit.
t All values in this table are JEDEC registered.

Switching Speed Circuit
+25V

sov

.05~f

51!

Jl
H
-25V

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-38

PRINTED IN U.S.A

POWER TRANSISTORS

JAN,
JAN,
JAN,
JAN,

2 Amp, 300V, Planar NPN

JANTX,
JANTX,
JANTX,
JANTX,

& JANTXV 2N5660
& JANTXV 2N5661
& JANTXV 2N5662
& JANTXV 2N5663

FEATURES

DESCRIPTION

•
•
•
•
•

Unitrode high voltage transistors provide
a unique combination of low saturation
voltage, fast switching, and excellent gain.
They are ideally suited for off-line power
supply designs and other applications
where the increased voltage rating adds
to system reliability.

Meets MIL-S-19500/454
COllector-Base Voltage: up to 400V
D.C. Collector Current: 5A
Peak Collector Current: lOA
Fast Switching

JAN, JANTX,
& JANTXV

ABSOLUTE MAXIMUM RATINGS

JAN, JANTX,
& JANTXV
2N5&&'

2N5BIO

250V.. .
Collector-Base Voltage, Vcao ......... .
2OOV ........... ..
Collector-Emitter Voltage, VCEO
6V ...... ..
Emitter-Base Voltage, VEBO ..
.. ............................ ..... .. ... 2A
D.C. Collector Current, Ic .
.... ......... 5A.
Peak Collector Current, Ic .
Power Dissipation
2.0W ....
25·C Ambient
... 20W.
lOO·C Case .................... .
Operating and Storage Temperature Range

JAN, JANTX,
& JANTXV
2N5&B2

JAN, JANTX,
& JANTXV
2NSB83

................ 400V
...... 300V
.... 6V
...... 6V........................ 6V ...... .
2A
.............. 2A.......
... 2A ..
..... SA
5A.......
.... SA.......... .
... 400V......

..... 250V......

. 3OOV..........

. 2OOV.

......... 2.OW... ..................... 1.2W ..

......... 1.2W

. lOW........................ l5W .. .
.. ......... -6S·C to lOO·C ..

................. lSW

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N56&O JAN, JANTX, & JANTXV 2N5661

TO-66

H
BASE

EMITTER

MILLIMETERS
15.75 MAX.
050 - .075
1.27 - 1.90
.250 - .340
6.35 - 8.63
.360 MIN.
9.14 MIN .
.711- .863
.028 - 034 DIA.
24.33 - 24.43
.958 - .962
14.47 - 14.98
.570 - .590
3.68 MAX. RAD .
.145 MAX. RAD.
. 142 - .152 DIA. 3.60 - 3.86 OIA .
8.89
MAX. RAD .
.350 MAX. RAO.
.190 - .210
4.82 - 5.33
.093 - .107
2.36 - 2.72
INCHES

A
B

C
D
E

F
G
H

J
K
L
M

620 MAX.

JAN, JANTX, & JANTXV 2N5662 JAN, JANTX, & JANTXV 2N5663

--C-r D ~

I

If

1iE

.

I B1-...~~
- _.

i±L-':- . .
F

A
B

C
0
E

INCHES
.335-.370
305-.335
.240- 260
15 MIN
.010- 030

'GGf

F

017 ±

G
H
J

.200
100
.03h.OO3
029- 045
.100

K

l

4-39

TO-5

MILLIMETERS
8.51 940
775-8.51
6.09-660
38.10 MIN.

254- 762
432:t:

.~~

5.08
2.54
787± 076
.736-114
2.54

~UNITRDDE

•

JAN, JANTX, & JANTXV 2N5660 JAN, JANTX, & JANTXV 2N5661
JAN, JANTX, & JANTXV 2N5662 JAN, JANTX, & JANTXV 2N5663

ELECTRICAL SPECIFICATIONS (at 25'C .unless noted)
2N5660, 2N5662

Test

Symbol

Min.

Max.

Units

Visual and mechanical

/454
Sub
group Method

A-I

MIL-STD-7S0

Test conditions

2071

See Mechanical Data

25'C
Collector-Emitter Breakdown Voltage (Note 1)

BVe..*

250

-

Vdc

A-2

3011

Ie = 10mAdc; Rae

Collector-Emitter Breakdown Voltage (Note 1)

BVeEo*

200

-

Vdc

A-2

3011

Ie

-

Vdc

A-2

3026

= loon; Condo B
= 10mAdc; Condo D
IE = 1Ol'Adc; Condo D

Emitter-Base Breakdown Voltage

BV"o*

Collector-Emitter Cutoff Current

'CES*

-

0.2

I'Adc

A-2

3041

VeE

-

0.1

pAdc

A-2

3036

6

= 200Vdc; Condo C

Collector-Base Cutoff Current

'eBO

Collector-Base Cutoff Current

, cBo

1.0 mAdc

A-2

3036

D.C. Current Gain (Note 1)

h~E*

40

-

-

A-3

3076

= 200Vdc; Condo D
Ve• = 250Vdc; Condo D
Ie = 50mAdc, VeE = 2Vdc

D.C. Current Gain (Note 1)

hF/

40

120

-

A-3

3076

Ie

D.C. Current Gain (Note 1)

hfE*

15

D.C. Current Gain (Note 1)

-

Collector Saturation Voltage (Note 1)

h"
VeE(sat)*

-

Collector Saturation Voltage (Note 1)

VeE(sat)

Base Saturation Voltage (Note 1)

V,,(sat)*

= 1Adc, VeE = 5Vdc
A-3 3076 Ie = 2Adc, VeE = 5Vdc
A-3 3071 Ie = 1Adc, I. = O.lAdc
A-3 3071 Ie = 2Adc, I. = O.4Adc
A-3 3066 Ie = 1Adc, I.
O.lAdc; Condo A
A-3 3066 Ie = 2Adc, I, = 0.4Adc; Condo A
A-4 3306 Ie
O.1Adc, VeE = 5Vdc, f = 10MHz
A-4 3236 Ve• = 10Vdc, IE = 0, f = 1MHz

Base Saturation Voltage (Note 1)

V"(sat)

5

-

0.4 Vdc
0.8

Vdc

1.2 Vdc
1.5 Vdc

Gain-Bandwidth Product

f T*

20

70

MHz

Output Capacitance

C,b

-

45

pf

Thermal Resistance

f)J_C

-

5.0

'C/W

6.7

'C/W

2N5660
2N5662
Switching Speeds

.

Turn-on time

t on*

Turn-off time

tOff

A-3

= 0.5Adc, VeE = 5Vdc

Ie

=

=

C-1

-

3076

Ve•

3151

= 0.5Adc

0.25 I'S

A-4

-

0.85 I'S

A-4

-

Adc

B-6

3051

VeE

Adc

B-6

3051

VeE

Ie

100'C
Forward Biased Second Breakdown

Is/.

0.6

-

Adc

B-7

3051

Is/.

27

-

mAdc

B-7

3051

= 10Vdc, t = 1Sec
= 40Vdc, t = lSec
VeE = 200Vdc, t = 1Sec
VeE = 7.5 Vdc, t = 1Sec
VeE = 25Vdc, t = 1Sec
VeE = 200Vdc, t = 1Sec

Unclamped Reverse Biased Second Breakdown

Es/.

0.2

-

mj

B-8

3053

Ie

= 2Adc, L =0.1 mh

Clamped Reverse Biased Second Breakdown

Est.

80

-

mj

B-9

3053

Ie

= 2Adc, L·= 40mh, Vol.m,

A-5

3041

VeE

A-6

3076

Ie

2N5660

2N5662

-

Is/.

2

lsi.

0.5

Is/.

36

-

mAdc

B-6

3051

Is/.

2

-

Adc

B-7

3051

= 200V

150'C
Collctor-Emitter Cutoff Current

'CES

*

-

100 I'Adc

= 200Vdc, Condo C

-65'e
D.C. Current Gain (Note 1)

h"

15

-

-

= 0.5Adc, VeE = 5Vdc

Notes:
1. Pulse width = 300115; duty cycle :Q% .
• Those parameters marked with a • are JEDEC registered and devices meeting these specifications are available as commercial 2N devices.

UNITROOE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 9S-1064

4-40

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N5660 JAN, JANTX, & JANTXV 2N5661
JAN, JANTX, & JANTXV 2N5662 JAN, JANTX, & JANTXV 2N5663

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
2N5661, 2N5663

Test

Symbol

Min.

Max.

Units

Visual and mechanical

/454
Sub

group

MIL-STD-750
Method

A-1

2071

Test conditions

See Mechanical Data

25°C

= 10mAdc; Roe = 100f!; Cond_ B
= 10mAdc; Cond_ D
IE = lOJ.lAdc; Cond_ D

Collector-Emitter Breakdown Voltage (Note 1)

BVCER*

400

A-2

3011

Ie

BVeEO *

300

-

Vdc

Collector-Emitter Breakdown Voltage (Note 1)

Vdc

A-2

3011

Ie

Emitter-Base Breakdown Voltage

BV"o*

6

-

Vdc

A-2

3026
3041

Collector-Emitter Cutoff Current

ICES

COllector-Base Cutoff Current

I cBo

COllector-Base Cutoff Current

0.2

/lAdc

A-2

0.1

/lAdc

= 300Vdc; Condo D
A-2 3036 Ve, = 400Vdc; Condo D
A-3 3076 Ie = 50mAdc, VeE = 2Vdc
A-3 3076 Ie = O.5Adc, VeE = 5Vdc
A-3 3076 Ie = 1Adc, VeE = 5Vdc
A-3 3076 Ie = 2Adc, VeE = 5Vdc
A-3 3071 Ie = 1Adc, I, = O.lAdc
A-3 3071 Ie = 2Adc, I, = 0.4Adc
A-3 3066 Ie = 1Adc, I, = O.1Adc; Condo A
A-3 3066 Ie = 2Adc, I, = 0.4Adc; Condo A
A-4 3306 Ie = 0.2Adc, VeE = lOVdc, f = lOMHz
A-4 3236 Ve, = 10Vdc, IE = 0, f = 1MHz

IcBO

1.0

mAdc

D.C. Current Gain (Note 1)

hFt

25

-

D.C. Current Gain (Note 1)

hFE*

25

75

D.C. Current Gain (Note 1)

-

-

hFE*

15

D.C. Current Gain (Note 1)

h"

5

Collector Saturation Voltage (Note 1)

VeE(sat)*

-

0.4

Vdc

Collector Saturation Voltage (Note 1)

VeE(sat)

-

0.8

Vdc

Base Saturation Voltage (Note 1)

V,,(sat)*

Vdc

1.5

Vdc

Gain-Bandwith Product

Voe(sat)
f T*

-

1.2

Base Saturation Voltage (Note 1)

20

70

MHz

Output Capacitance

Cob

-

45

pf

Thermal Resistance

9 J_ c

-

5.0

°C/W

6.7

°C/W

2N5661

Switching Speeds

-

A-2

3036

C-1

3151

VeE
Ve,

Turn-on time

to/

-

0.25 J.lS

A-4

toll *

-

0.85 J.lS

A-4

-

Ie

Turn-off time

I SIB
I,,"

0.5

ISIB

2N5663

= 300 Vdc; Condo C

-

= O.5Adc

1000C
Forward Biased Second Breakdown
Adc

B-6

3051

VeE

Adc

B-6

3051

VeE

19

-

mAdc

B-6

3051

IS/B

2

-

Adc

B-7

3051

ISIB

0.6

-

Adc

B-7

3051

IS/8

14

-

mAdc

B-7

3051

Unclamped Reverse Biased Second Breakdown

ES/B

0.2

mj

B-8

3053

Clamped Reverse Biased Second Breakdown

ESIB

80

-

mj

B-9

3053

= 10Vdc, t = 1Sec
= 40Vdc, t = 1Sec
VeE = 300Vdc, t = 1Sec
VeE = 7.5 Vdc, t = 1Sec
VeE = 25Vdc, t = ISec
VeE = 300Vdc, t = ISec
Ie = 2Adc, L 0.1 mh
Ie = 2Adc, L
40mh, V,'.mp = 300V

ICEs

-

A-5

3041

VeE

A-6

3076

Ie

2N5661

2N5663

2

=
=

150°C
COllector-Emitter Cutoff Current

100 JlAdc

=300Vdc, Condo C

_65°C
D.C. Current Gain (Note 1)

h"

10

-

-

= O.5Adc, VeE = 5Vdc

Notes:

1. Pulse width = 300/1S; duty cycle :'02% .
• Those parameters marked with a • are JEDEC registered and devices meeting these specifications are available as commercial 2N devices.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-41

PRINTED IN U S.A

II

JAN, JANTX, & JANTXV 2N5660 JAN, JANTX, & JANTXV 2N5661
JAN, JANTX, & JANTXV 2N5662 JAN, JANTX, & JANTXV 2N5663
Forward Bias
Safe Operating Area
2N5660, 2N5661

Forward Bias
Safe Operating Area
2N5662, 2N5663

10

10
Tc = 100'C

Tc = 100'C

g

'"

>-

150:

DC.

0:

::J

"

t p =lms
_
Duty Cycle = 10%

0:

~
"

f-

.1

1'0
~

"

~

1\.'/ .\

I

.2

0:
0:

.5

~2

8

.1 _

1,= 100",
_
Duty Cycle = 10%

I"

~ r-...

f---/

1\

P\V ~

I

!\

.05

..2

\

.02

1,= Ims
_
Duty Cycle = 10%

0:

'\

os

DC.

a

,\

\

'\. l'\.

r'\.

§

(\~
~

t.= 100",
._
~
Duty Cycle = 10%

'\ ~

g

\

.02

2N5660

2NS661

2NS662

01

10

I

20

SO

100 200 300

V", - COLLECTOR TO EMITTER VOLTAGE 01)

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

Unclamped Reverse Bias
Second Breakdown
10

10

T. = 25'C

~~

'"

.~

"

t:
Q)

~

g
"'oz

;::
o

5

I'

~
~

""

.2
.1

~

5:

2

I-

Z

"'
0:

~.=-o.5V

.2

--

.02

2r5660'162- ---I

0:

g
...J

~V,,=-4V

1 .05

1

0:

a .5

~

...J

.01

T= lOO'C

181 =-I 82 =l c /lO

........

\.

.5

!!:

8

.02
.01

o

2

1.5
.5
Ie-COLLECTOR CURRENT (A)

1

2
VeE -

10

20

50

100 200 300

COLLECTOR·EMITTER VOLTAGE (V)

D.C. Current Gain

D.C. Current Gain

2N5660, 2N5662

2N5661, 2N5663

1000
VCE =5V

V",=5V

SOO

500

z 200

;;:

I-

" 100

li:
l:!0: so

-

Z200

~

~

150'C
25'C

:J

55'C
20

1Z

"~

--

100

l:!0:

50

~

20

:J

\~

d

I

r-.

2N5661, 63- -

.1

I .05
.2

1000

~

2NS663

.01
10
20
SO 100 200 300
V", - COLLECTOR TO EMITTER VOLTAGE 01)

I

10

d

I

\,

10

--

..........

lSO'C

l"'--.

---~

-2;C

1

.......

-55'C

~

~

\
2

1
.01

.02

.05
Ie -

.1

.2

.5

1

2

.01 .02

10

COLLECTOR CURRENT (A)

UNITROOE CORPORATION. S FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

.05

Ie -

4-42

.1

.2

.5

2

5

10

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N5660 JAN, JANTX, & JANTXV 2N5661
JAN, JANTX, & JANTXV 2N5662 JAN, JANTX, & JANTXV 2N5663

Saturation Voltalle
Temperature Coefficients

Saturation Voltages
+2

~J = 2slc

P
>+1.5
.s
~

+1

'"U

+.5

z

--- /

VIEI I.-leIS

.2

u.

VeE' 'B= 'CliO

V'

It.--/' V

.1

r-

.05
.01

f-.02

~

5rC tO l25'C V

-.5

=>

/ /

>-

~

-1

"'

V

25'C to lSO'V

Q.

:!i -1.5

'">-

-2 r-- A V"

1

~TI'lle/'l

~

I--"

.01

10

.05 .1
.2
.5
2
Ie - COLLECTOR CURRENT (A)

.02

'C

.2

.1

~

::E .05

~

ill

eu

~

'"

;::

Rise Time,
tr ~
__ f-""

............

t~

7

/
'iii'

/

'C

c:

~

8
ill

g

/2S'C

--- --t::

Delay Time,

10

10

'.='C/IO

'iii'
c:
0
u

".~ ~55'C to 25'C

Switching Speed
Characteristics

Vee _IOOV

.5

,/

-2.5

.2.5
2
.05 .1
Ie - COLLECTOR CURRENT (A)

Switching Speed
Characteristics
1.0

•

V

L-+-:::t::1-r7

AVe.

'"uo

/

10

25'C to lSO'C

ii:

I

/

'C/lB~

§.

'"
;::

::E

~

.02

2S'C

~

'2s;c
.5
lSO'C

==

----""':--

-

r-Storage Time, ts

t"--

...........

-I-

<

I - f-f-

Fall Time, t f

.2

.01

,./'

~

-----

2S'C

.1
.2

.5
1
Ie - COLLECTOR CURRENT (A)

.2

2

.5
Ie - COLLECTOR CURRENT (A)

Thermal Response

Switching Speed Circuits
Duty Cycle
.5
TektroniX
541Aor
Equivalent

!z
'"

.2

iii'"
zu
« z .1
0::<
>-0
fa ~ .05
N:!i

~:
;\;\ .02
0::0::
Tektronix
S4lA or
Equivalent

~ ~ .01
1>~

0.5

1;;;;jiiiiI-

f - f~~
Ir--+--- k: ~ ~

j

~

,.-

f-'"

v:V

V
~
.01/ ~

~

=
=

0 J.o
o

.1

z
I

1
I

i'--

T---

.02

~

.2

o

.1

u

1

~N566S,167

.02
.01
5
VeE -

1

COLLECTOR CURRENT (A)

10
20
50 100 200 300
COLLECTOR VOLTAGE (V)

D.C. Current Gain

D.C. Current Gain

2N5665. 2N5667

2N5664. 2N5666
1000

1000

VeE

VeE = 5V
500

500

~ 200

"'"
f-

zOJ
~

::>
u

100

50

U 20
ci

I

~

P-

I--

:V

I--'

--

z
;;:

r-...

'z"

~

t"---

OJ

~

0:
0:

V

(J

U 20
ci

I

'\

150'C

~

50

::>

~

= 5V

200

... 100

10

r--.. t-....

2JC

~

~:s-- l--

-.. ~

VI--'

"" ~\'

10

1

1
.01

f-..

_u .05

3

Ie -

---

I

1-o

.5

0:

~=-4V

..J

.01

~

u

"- ~VBE=-2V

~

2N5664,66

0:

~

~

~

.05

g

§

.02

.05
.1
.2
.5
1
2
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

.01

10

.02

.05
Ie -

4-47

.1

.2

.5

10

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N5664 JAN, JANTX, & JANTXV 2N5666
JAN, JANTX, & JANTXV 2N5665 JAN, JANTX, & JANTXV 2N5667

Saturation Voltal{e
Temperature Coefficients

Saturation Voltages
T;

_ +2

= 25!C

P
~+1.5

~
UJ

";::
..J

I-- ~

VIE. 18= 'CIS

I--""""

.5

~ +1
UJ
U +5
u:u.

Ld:

II

VeE, 1.= I CIIO
.1

.05
.01

.02

-~

~

'1

'.=

UJ

a:: -.5

~

55;C to 25°C

/

-1

0:

UJ

25°C to lSIiV/

a.
~ -1.5

~ I--

I -2

'CIS

~

1

-2.5
.01

10

.02

'/

Vi

f--"'17

1/

V

V

~t025OC

....

.2
.5
.05 .1
Ie - COLLECTOR CURRENT (A)

~

- f-

:>

V

VeE

JoV CE

UJ

J

.2

25°C to l50°C/

8

IV

0

>

leI's ~ 10

10

.05 .1
.2
.5
Ie - COLLECTOR CURRENT (A)

Switching Speed
Characteristics

Switch ing Speed
Characteristics
10
Vee

.5r-~-t~----+-~r---+---~-1

= 100V

182=-I'I=IC/10

""u'"o
'""~

g

l"- t- .....

150°C

Storage Time,
1

t~

f-r-t25°C

I---- [--.....
l-

UJ

:i: .5

>=

V

I-t-

.02 t-i-i--HH----t---t---t-

N."l n'j'

.2

T

I--- k:

f--"' V

~

_V

V

s:

?

25°C

.1
.5
Ie - COLLECTOR CURRENT (A)

Ie - COLLECTOR CURRENT (A)

Switching Speed Circuits

Thermal Response
Duty Cycle

+lOOV

....
Z

100!!

Tektronix
54IA or
EqUivalent

~

•5

~~
.... <

.1

~~
NO.

.05

~:;;!

.02

Z UJ

.01

::i~
-4V

:5~
1:1:

+100V

'B.

= -18Z =

SOmA
TektrOniX
54lA or
EqUivalent

25V

~~ .005

t::::
- I-- l - f-

.2
.• 2

ZUJ

0.5

~ ,...-

~ ,.-

..-

..... ~ .....- ........

.....~ V ",,- .....-V
.....-

V./"

i--S:ngle Pulse

.001
.01 .02
-4V

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-48

~

.....

r-- ...... :::::
~ ;/'

.002
10)(5

~~~

l::;::; Iiiiiii

P

.05 .1.2

9 J-e (t) = r(t) • 8 J-C
9 J-C = 3.3°C/w for 2NS664,65
9 J-C = 6.7°C/w for I I 2Nr6~, 671

.5 1 2
5 10 20
TIME (milliseconds)

--

r-

50 100 200 500 1000

PRINTED IN U.S.A.

2N5671
2N5672

POWER TRANSISTORS
30A, 150V, Fast Switching,
Silicon NPN Mesa

DESCRIPTION
These glass passivated power transistors
combine fast-switching, low saturation
voltage and rugged Es/b capability.
They are designed for use in switching
regulators, converters, inverters and
switching-control amplifiers.

FEATURES
• Collector-Base Voltage: up to 150V
• DC Collector Current 30A
• low VCE ISAT)
0.75V Max_
• ton
O.5I'S} @ Ic 15A,
• t'lll 0.51'S

=
=

=

=

=

ABSOLUTE MAXIMUM RATINGS •
2N5I71

* Collector-to-Base Voltage, VCIO

INS&71

,., .....................................................................................................................................l20V................................ 150V
Collector-Emitter Sustaining Voltage, VCEX (SUS)
................................................................................................. 120V ................................ 150V
VCEIl (SUS) ............................................. ............................................................. nov ................................. .l40V

*
*
*
*
*

~~~.(~~S).:::::::::::::::::::::::::::'::::::::::::::::'.::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::.~~::::::::::::::::::::::::::::::::::~~~~

Emitter-Base Voltage, VEIO .....................
Collector Current, Ic continuous
Base Current, la continuous .. ...... ...........
Power Dissipation, 25'C Case ....................
Operating and Storage Temperature Range

......................................................................................30A...................................30A
.. ..............................................................................................................10A................................... .lOA
..........................
.. ........................... .l40W.................................140W
.. .................. ..
.. ......................... -65 to 200'C................ ..

• JEDEC registered values.

MECHANICAL SPECIFICATIONS

N9TE:

2N5671-2N5672

Leads may be soldered to within

Ih6" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

F

M

I ~~'~
I
~BbE ei'
H
I

C 0

A
B

J-~

7

BASE
EMITTER

L

c
D
E
F
G
H
J

K
L
M

ins.

mm.

875 MAX
.135 MAX .
.250-.450
312 MIN.
.038- 043 OIA
188 MAX. RAD
1.177 1.197
655-.675
205- 225
.420 440
525 MAX. RAD
151- 161 DIA.

22.23 MAX.
343 MAX.
6.35-1143
792 MIN.
0.97 1.09 OIA .
4.78 MAX. RAD.
2990-3040
16.64-1715
5.21-572
10.67-1118
13.34 MAX. RAD
3.84-4.09 DIA.

TO-204AA (TO-3)

[1JJ
6-79

4-49

_UNITRDDE

•

2N5671 2N5672
ELECTRICAL SPECIFICATIONS (at 25"C unless noted)
Test

Symbol

2N5671
MIN.
MAX.

2N5672
MAX.
MIN.

Test Conditions

Units

D.C. Current Gain (Note 1)

hFE

20

100

20

100

Ic = 15A, Va = 2V

20

-

20

-

Ic = 2OA, Va = 5V

0.75

0.75

V

Ic = 15A, la = 1.2A

1.5

V

Ic = 15A, la = 1.2A

1.6

-

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCEI"tl

Base Saturation Voltage (Note 1)

VaElsatl

Base to Emitter Voltage (Note 1)

VaE

-

Collector-Emitter Sustaining
Voltage (Note 2)

VCEOI,",I

90

-

120

-

V

Ic = 0.2A, I. = 0

Collector-Emitter Sustaining
Voltage (Note 2)

VCElCI •••1

120

-

150

-

V

VaE = -1.5V

1.5

1.6

v
V

Ic = 15A, VCE = 5V

Ic=0.2A

*

la=O
Collector-Emitter Sustaining
Voltage (Note 2)

*

*

*

VCER 1•••1

Emitter-Cutoff Current

lEBO

Collector Cutoff Current

ICEO

Collector Cutoff Current

ICEV

110
10

-

-

140
10

-

mA

VEa = 7.0V

10

mA

VCE = 80V

mA

VCE = 135V, V.E= -1.5V

-

15

-

10
12

-

10
10

V

RaE = 50n, Ic = 0.2A

VCE = 110V, VaE = -1.5V
VCE = 100V, VaE = -1.5V,
Tc =150"C

Magnitude of Small
Signal Forward Current Transfer
Ratio

h'e

10

-

10

-

Collector Capacitance

Cob

-

900

-

900

pF

Vca =10V,f=lMHz

Second Breakdown Energy

Es/b

20

-

20

-

mJ

Vae = 4V, Ic = 15A
RaE = 20n, L = 180l'H

Forward Bias
Second Breakdown
Collector Current

Isib

5.8
0.9

-

5.8
0.9

-

A

Switching Speeds:
Turn-on Time
(Delay + Rise)

tan

-

0.5

-

0.5

I'S

-

1.5

-

1.5

I'S

0.5

0.5

I'S

1.25

"C/W

Storage Time

t.

Fall Time

t,

Thermal Resistance:
Junction-to-Case

RSJC

1.25

VCE = 10V, Ic = 2A, f = 5MHz

VCE = 24V, t = Is, non-rep.
VCE = 45V, t = 15, non-rep.

I c =15A
lal = la2 = 1.2A
VCC= 30V

VCE = 40V, Ic = 0.5A

Notes:

1. Pulse width = 2501'S; duty cycle ,;1 %.
2. Sustaining Voltage. Measured at a high current point where collector·emitter voltage is lowest. Current pulse length"" 50I'S; duty cycle'; 1 %.
Voltage clamped at maximum collector·emitter voltage.
• JEDEC registered values.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-50

PRINTED IN U.S.A.

2N5671 2N5672

Forward Bias Safe Operating Area
30

NJ

20

D.C.

~
z>-

10

,

= 25'C

~

'"

0

..

"-

~

..J
..J

8

~

....

"'0>z
"''"

~{/1f#1

~
"'~

~J~

z

\

1

........

;:

r\-'

2N5671
2N5672

60

.'""

\

\
158 Llmitedt

80

>u

\

\

"'\
:--..

·100.5

"-

,

"'

Te

1mS

I'

0:
0:
:l
U
0:

I
-"

I

1\.

,lamS

Power Derating
100

R--",
~"'0

40

'"

AT OUIRED OPERATING VOLTAGE.

20

:l
U

TI()Irf CU/fllilENT LIMIT AND's
ZS'C SOAR CURYE

I>

" ""

DlR"'T~ OISSI~"."

CUIUttNT LIMIT FROM

'\

DASH LINlS ON SOAR CURVES ARE EXTtNSIOIIIS OF
DISSIPATION
PURPOSE~

0.5

o

0.3

20

10

2

50

100

200

a

•

,.~o
~

LIM'1'DR j~MPEAITUIltElEftAT'NG

~

40
80
120
160
TC - CASE TEMPERATURE I'C)

200

VeE - COLLECTOR VOLTAGE (V)

DC Current Gain
500
V~E-511

I

--

200

z
;;:

"....
'"'"

100

100'C

l-

I

r-

25!C

zw

50

,.....

:l
U
(,)

0

l

20

V

V

l"'55'C

10

5
0.2

0.5

10

20

Ie - COLLECTOR CURRENT (A)

Transistor -

Resistive - Turn·On Time

Saturation Voltages

3.0

1000
..",

VIE ".tl

1.0 I--

~

"!:i.
w

.5

0

z
0
;:

.'"
......
:l

/~
~

2S'C
-100'C

>

.1
.05

Vl

I!:::

500

sk,c

t%

/

g: 200

......... v

......-::: ~/

-

'::'5~

-C
=::::::

,./

~
,,-

V

Vee

25'C

........
100'C.....

100'C

,=8- r-

.5

10
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10

0.5

S:

=

Vcc 30V
Ie/Ian

o.a

20 30

td

~

20

1

.04

~

~ l""'r2f.c

fJ1t /

:::"""'-;s'C

le/l

.3

-

::::-

/'
t, r-

100'C

2

10

20

Ie - COLLECTOR CURRENT (A)

4·51

PRINTED IN U.S.A.

2N5671 2N5672

Resistive Turn-Off Time

---- -

I--ts

'"
.3

Vee = 30V
le/l, :;"8

"'::;;

;:
(!l

z
i(.)

...
'"
~

0.5

100'C

'"

25'C~

r--

0.2

'"

k
100'C

I-lf
0.1

r-

i

25' ;...-

.05
0.5

0.2

Ie -

10

20

COLLECTOR CURRENT (Al

Switching Time Test Circuit

:6Tl _

R"

~4vLf
P.W.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

=25"5

4-52

PRINTED IN U.S.A.

2N5838
2N5839
2N5840

POWER TRANSISTORS
3A,375V
Silicon NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•

These high voltage glass passivated power
transistors combine fast switching, low
saturation voltage and rugged Es/b capability.
They are designed for use in off-line power
supplies, high voltage inverters, switching
regulators, ignition systems and deflection
circuits.

Collector-Base Voltage: up to 375V
Peak Collector Current: SA
Low Saturation Voltage
High Second Breakdown Energy

ABSOLUTE MAXIMUM RATINGS *
2N5838

2N5na

2N5840

Collector-Base Voltage, VC80 ............. ...................... .................................. ........................... 275V .....................
300V....................... .... 375V
Collector-Emitter Voltage, VCEO .. .........•......................•... ....•........•..•..•..•................
. .. 250V..........................
275V ................................ 350V
Emitter-Base Voltage, VEBO ........................................ ................................................... ..•..•...•.•. . 6V..............................
..6V..................................... 6V
Collector Current, Ic continuous ........................................................................................ ....... 3A ................................ 3A................................... 3A
SA................................... 5A
Collector Current, ICM, peak .......................................................................................................... SA .........................
Base Current, I, continuous .... .......................................................................................... .. 1.5A.............................. 1.5A...............
.......... 1.5A
Power Dissipation, Pr 25·C Case ............................................................................................. lOOW........................
lOOW................................ .100W
Operating and Storage Temperature Range
........................................................................................-65 to +200·C ............................................
• JEDEC registered values.

MECHANICAL SPECIFICATIONS
NOTE:
Leads may be soldered to within

TO-204AA (TO-3) (Copper)

1116" of base provided temperaturetime eXpOsure is less than 260°C

for 10 seconds.
A
B

F
Base
Emitter

C
D

E
F

G

L
Drain

(Case)

H

J
K

L
M

6-79

ins.
875 MAX.
.135 MAX.
.250-.450
.312 MIN
0.057 0.063 DIA.
188 MAX. RAD
1177-1197
655-.675
.205- 225
420-.440
525 MAX. RAD
.151- 161 DIA.

4-53

mm.
22.23 MAX.
3.43 MAX .
6.35-11.43
7.92 MIN
1.45-1.60 DIA.
4.78 MAX RAD
29.90-30.40
16.64-17.15
5.21-572
10.67-1118
13 34 MAX RAD.
3.84-409 DIA

[bD UNITRDDE

..

2N5838 2N5839 2N5840
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test
D.C. Current Gain (Note 1)

Symbol
hFE

2N5839
2N5840
2N5838
MIN. MAX. MIN. MAX. MIN. MAX.
20
20
20

-

-

10

50

10

50

-

-

-

-

V

Ic =3A,VCE =2V

1.5

V

Ic = 2A, la = 0.2A

-

V

Ic = 3A, la = 0.375A

hFE

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCEI,.t)

-

-

-

1.5

Collector Saturation Voltage
(Note 1)

VCEI"t)

-

1.0

-

-

Base Saturation Voltage (Note 1)

VBE (,.,)

-

-

Base Saturation Voltage (Note 1)

VBEI,.tl

-

2.0

-

-

-

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO ISUS)

250

-

275

-

Collector-Emitter Sustaining
Voltage

VCEX

275

-

300

-

Emitter-Base Cutoff Current

'EBO

Collector Cutoff Current

Collector Cutoff Current

ICEO

I CEV

2.0

V

Ic = 2A, la = 0.2A

V

Ic = 3A, IB = 0.375A

350

-

V

Ic = 200mA, la =

375

-

V

Ic = O.lA, VaE = -1.5V,
L= 10mH

-

1.0

-

1.0

-

1.0

mA

VES =6V

2.0

-

-

-

-

VCE - 200V

-

-

2.0

2.0

mA

VCE = 250V

5.0

-

-

-

mA

-

-

-

8.0

-

-

-

-

-

5.0

-

-

-

-

-

-

5.0

2.5A

-

2.5A

-

Forward Bias Second Breakdown

Islb

2.5A

-

Second Breakdown Energy

Es/b

0.45

-

0.45

Collector Capacitance

Cob

-

150

-

Small Signal High Frequency
Gain

hIe

ICEV

2.0

Ic =2A,V CE =3V

-

Collector Cutoff Current, 150'C

Test Conditions
Ic = O.5A, VCE = 5V

40

D.C. Current Gain (Note 1)

8

Units

-

-

5

-

2.0

150

5

0.45

5

-

b

VCE = 265V

2.0

VCE = 290V

VaE = -1.5V

VCE = 360V

-

VCE = 265V
mA

VCE = 290V

VaE = -1.5V

VCE = 360V
VCE = 40V, tp = 1 Sec.

-

mJ

RaE = 501l, L = 100.uH

150

pF

Vca = 10V, IE = 0, f = 1 MHz

-

MHz

Ic = .2A, VCE = lOV, f = 1 MHz

Switching Speeds:
td

-

-

-

0.7

-

Delay Time

.uS
td
t,

-

-

0.6

-

-

1.5

-

-

la, = 182 = (.375A)

.uS
t,

-

t,

_. -

t,

-

3.0

tl

-

-

1.5

-

-

-

-

-

3.75

-

3.0

Storage Time

-

-

-

-

1.5

-

1.5

Fall Time

Ic = 2A, VCE = 200V:

-

1.5

ReJC

-

1.75

-

-

-

-

1.75

-

1.75

I" = 1'2 = (0.2A)
Ic = 3A, VCE = 200V,
I" = 1'2 = (.375A)
Ic = 2A, VCE = 200V,
101 = 102 = (0.2A)

"S
tl

la, = 1'2 = (0.2A)
Ic = 3A, VCE = 200V,
I" = 1'2 = (.375A)

.uS
-

la, = la2 = (O.2A)
Ic = 3A, VCE = 200V,
Ic = 2A, VCE = 200V,

1.75

Rise Time

Thermal Resistance

Ic = 2A, VCE = 200V,

0.7

Ic = 3A, VCE = 200V,
la, = 102 = (.375A)

'C/W

Notes:

1. Pulse width = 250"S; duty cycleo51 %,
2. Sustaining Voltage. Measured at a high current point where coliector-emitter voltage is lowest. Current pulse length'" 501lS; duty cycle 05 1%.
Voltage clamped at maximum collector-emitter voltage .
• JEDEC registered values,

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064
.

4-54

PRINTED IN U.S.A.

2N5838 2N5839

Forward Bias Safe Operating Area

Power Derating
100

10
D.C.

~

~

"'\.

....z

Power DisSipatio~--,~
Limited

I

'"0:0:

\

Ims--

"Cl

....0

lSI

;::
«

a:

Limited

.5

UJ

2N5838

0

0

T e =2S'C
Curves Apply Below

.2

1ft ~ate~

.1
5

20

10
Ve , -

~J

'"

~

K~

~"'<>

DISSIPATION l'MrTi FOR

200

o

500

.......

DISSI~A

AT DESIRED OPERATING VOLTAGE. DERATE
'\
liON CURRENT LIMIT AND ',. CURRENT LIMIT FROM
25"C50"'1'I CURVE

20

1

PURPOSES

100

a

40
Tc -

COLLECTOR VOLTAGE (V)

TMPERinJRE ,ERATING

I"

160

120

80

'\
200

GASE TEMPERATURE ('G)

Saturation Voltages

D.C. Current Gain
5

I I
V e, = SV

100

z
;;:
Cl

'e/l, = 5

2
100'C

?;

50

....

Z

0:
0:

::>

20

I

I

.-

0

t.i
r:i

'"Cl
~0

25'C

'"

"":::::

-~

SS'C

10

>

-55'C

5'
0.5

z

~I\

i=

~

....

~

0.1

0.2
Ie -

O.S

2

.05
.05

5

COLLECTOR CURRENT (A)

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6S09 • TELEX 9S-1064

0.1

0.2
Ie -

4-55

~ V 25'C

".,.

«
III

2

--: ~ ....

VV

0

5

/

55'C
/ 0 C/V

100'C

«
a:

.r:'I1.

0.1

--

VIE ($lIt]

::> 0.2

.OS

•

('0

......

DASH LINES ON SOAR CURVES ARE EXTENSIONS OF

III

200

"',1':

,j',j'

40

1111
50

~(I

UJ

a:
a:
::>
u

2N5840

Vt'O

......

'\i

....
z

.-

I-\--

2NS839

I
..!'

60

z

0:

0

""-

"

«

0

..J
..J

."

80

....0
u

::>

'"0

": :--...

It:

10ms

2N5840

~

VeE

0.5

l1at]

2

5

COLLECTOR CURRENT (Al

PRINTED IN U.S.A.

/
2N5838 2N5839 2N5840

Resistive - Turn-On Time

Resi~tive -

1000

Turn~Off Time

10

./

.....

./

t.
2

'U1

3
w

100

100'C

l' I'--...

ts

::;

i=

25'C

i=

td

0.5

50

II

20

0.2

0.5
Ie -

2

0.1
0.1

10

1--"" .......

V

V~

J.25'C

I
0.2
Ie -

COLLECTOR CURRENT (A)

100'C

...... ~

0.2

I

Vee = 125V
le/l,=5

~

~

2S~C-

10
0.1

---

I/"

"

'U1

oS
~

V

5

2S'C

125V
5

Vee
le tl,

100'C
500

0.5

1

2

10

COLLECTOR CURRENT (A)

Switching Time Test Circuit
200V

6V

112 =

i;,
R,

P.W.

UNITRODE CORPORATION. 6 FOReES ROAO
LEXINGTON. MA 02173. TEL. (817) 881-8540
TWX (710) 328·8609. TELEX 96·1084

= 25#5

4·56

PRINTED IN U.S.A.

2N6249
2N6250
2N6251

POWER TRANSISTORS
IOA,450V, Fast Switching,
Silicon NPN Mesa

FEATURES

OESCRIPTION

•
•
•
•

These high voltage glass passivated power
transistors combine fast switching, low
saturation voltage and rugged Es/b capability_
They are designed for use in off-line power
supplies, high voltage inverters, switching
regulators, ignition systems and deflection
circuits.

Collector-Base Voltage: up to 450V
Peak Collector Current: 30A
Low Saturation Voltage
Maximum Safe Area of Operation

ABSOLUTE MAXIMUM RATINGS
2N&248

• Collector-Base Voltage, Vcso ................. .
• Collector-Emitter Voltage, VCEO
Emitter-Base Voltage, VESO .
• Collector Current, Ic continuous
Collector Current, I CM • peak.
• Base Current, Is continuous
• Power DisSipation, PT 2S·C Case ....
• Operating and Storage Temperature Range

*

2N6250

2N6251

..... . .. .. .... 300V.....
.. ........ ..... 37SV......
........... 450V
200V...
.... 275V...... . . . ............ 350V
.. .................. 6V....
.. ...... 6V......
...6V
........................... JOA ....... .
.. lOA. ..................... lOA
............. ....... .........
.. 30A...
.......... 30A
................ 20A
...... lOA........
lOA..
............. lOA

.. ..175W...........

.......... 175W.....

175W

.................... -65 to +200·C ..

JEDEC registered values.

MECHANICAL SPECIFICATIONS
NOTE:

2N6249-2N6251

Leads may be soldered to within
l1t6" of base provided temperature~
time exposure is less than 260°C
for 10 seconds.

F

~WE
C 0

6-79

A
B

M
BASE

IT ~.J::L
ei'
H
I

J-~

"K

EMITTER

c
D
E
F

G
H

L

J
K
L
M

ins.
875 MAX
135 MAX
250 450
312 MIN
038 043 DIA
188 MAX RAO
1177 1197
655 .675
205- 225
420 440
525 MAX RAD
151-161 DIA

4-57

TO-204AA (TO-3)

mm.
2223 MAX
343 MAX
635-1143
792 MIN
097-109 DIA
478 MAX RAD
2990-3040
16641715
521 572
10 67 11 18
1334 MAX RAD
384409 DIA

~UNITRDDE

•

.

2N6249 2N6250 2N6251

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

*

Collector Saturation Voltage
(Note 1)

VCElsot)

-

1.5

-

1.5

-

1.5

V

. V'E(sot)

-

2.25

-

2.25

-

2.25

V

Test Conditions
Ic _lOA, VCE _ 3.0V
Ic =
I. =
I. =
I. =

lOA
LOA (2N6249)
1.25A (2N6250)
1.67A (2N6251)

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO (sus)

200

-

275

-

350

-

V

Ic=2QOmA

Collector-Emitter Sustaining
Voltage (Note 2)

VCEX (.u.)

225

-

300

-

375

-

V

Ic = 200mA, R.E= 500
L= 14mH

Emitter Base Cutoff Current

lEBO

1.0

1.0

mA

ICEO

5.0

-

1.0

Collector Cutoff Current

-

5.0

rnA

5.0

...,..

5.0

mA

10

10

mA

2.5

-

2.5

mJ

5.8
0.3

-

A

1.0

'C/W

Second Breakdown Energy

Es/b

-

2.5

-

Forward Bias Second Breakdown

I sib

5.8
0.3

-

5.8
0.3

-

Thermal Resistance

ReJc

Collector Cutoff Current
Collector Cutoff Current, 125'

*

Units

hFE

Base Saturation Voltage (Note 1)

*

Symbol

2N6251
2N6249
2N62SO
MIN. MAX. MIN. MAX. MIN. MAX.
50
10 50
8
50
6

Test
D.C. Current Gain (Note 1)

High Frequency Gain
SWitching Speeds:
Rise Time
Storage Time
Fall Time

ICEV
, CEV

IhFEI

-

5.0
5.0
10

-

-

2.0
3.5
1.U

0.8
1.8
U.5

2.0
3.5
1.U

IC = lOA
1., = 1.2= 1.0A (2N6249)
IBI = I., = 1.25A (2N6250)
'BI = IB2 = 1.67A (2N6251)

1.0

-

1.0

-

2.5

0.8

2.0
3.5
1.0

0.8
1.8
0.0

1.8

0.5

Ic = lOA, L = 50"H
RaE = SOU, VBE loff) = -4V

2.5

-

tf

VCEO ISUS)

V. E= -1.5V
VCE = rated VCER ISUS)

VCE = 30V
VCE = 100V
VCE = 10V,I c = SA
Ic = lA, VCE = lOV, f = 1 MHz

2.5

t
t

VEl =6V
VCE = 50V less than rated

-

"S

Notes:

1. Pulse width = 2501'S; duty cycle :$1 %.
2. Sustaining Voltage. Measured at a high current point where collector·emitter voltage is lowest. Current pulse length '" 50I'S; duty cycle :$ 1%.
Voltage clamped at maximum collector·emitter voltage.
• JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
LEX INGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 '. TELEX 95-1064

4-58

PRINTED IN U.S.A.

2N6249 2N6250 2N6251

Forward Bias Safe Operating Area

Power Derating
100

"

40

~

~

'\ f'.

80

0:

...u
0

""z"

l'\. ~ ~(I4r.I~~O
......

U'U';.

60

"

au

0:
0:

:)

r"-

o

...

1.0

au

'\

I--t'

Limited

CJ

.4

I
..!'

.2

H~U~

i-2N6249

'l\
.1\1\

.1

200

.04
10

..

HIN~J51

1\

~'

Te = 25'C

~

40
80
160
120
TC - CASE TEMPERATURE ('C)

"- \
K
I\l\
'1 ;tedl IV' f\
I\.
.!

f--- Iso

oJ
oJ

TMPERjTURE

~y

Dissipation

2.0 f--- Li

a:

0

P.wJ

P.W.
ImS

Power

u

0

DASl1llNES ON SOAR CURVES ARE EXTENSIONS Of
DISSiPATION lIMITj FOR
,ERATING
PURPOSES

o

4.0

II

'~io~'s r-.

D. .

:)

........

OERAt~ OISSt~'"

u

au

CJ

AT DESIRED OPERATING VOLTAGE,
'\
TtON CURRENT LIMIT AND II .. CURRENT LIMIT FROM
2S"C SOAR CURVE

20

10

0:
0:

~<"0

...z

g

...z

"

~J'1i
'&--1,.

>=
0:
au 40
0

LI

20

20

50

100

200

500

1000

VeE - COLLECTOR VOLTAGE (V)

Reverse Biased Safe Operating Area
40

==

Saturation Voltages
5

-In
VIEloffl :s:;;.-5V

'C/5

'SI -

II

Te= 100'C

g

10

au

4.0

:)

2.0

....
z

'"'"
....'"0

u
u

1/

1.0

au

2ii250

oJ
oJ

0

u
I
_0

1/

2

,..~

II
~r7

~

...

(!J

0

z
0

_VIE ("'1

'L

2S'C

>

'rr

ss.lc

I--

"!:i

11 II

2~W9L

I

lell, = 5

0.5

i==- t-

100'C

~

11 r-

'"

v:

:)

~

0.4
2N6251'- f - -

0.2
VClIlitl

~~

~V

~V

0.2
0.1 t - 1OO'C
.1

2S'C

r-Ft-. ss'c

.04
10

20

50

100

200

soo

.05
0.2

0.5
2
Ie - COLLECTOR CURRENT (A)

1000

10

20

VeE. I''') - COLLECTOR VOLTAGE (V)

DC Current Gain

soo
Typical
Inductive Load
Switching Performance

200

z
;;:

(!J

...

...
'"'"
Z

50

:)

U
U

~

20

.r:

.......

~~!s.

~~

i"""

t f•
nS

t,j
nS

3

25
100

.8
1.10

.14
.18

.025
.035

5

25
100

.9
1.2

.14
.16

.025
.030

10

25
100

1.2
1.5

.05
.12

.050
.100

~

10

5
0.2

t,
~S

-100'C
2S'C

0

I

-

TJ
'C

Ie
Amps

VeE =5V
100

10
2
0.5
Ie - COLLECTOR CURRENT (A)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861.6540
TWX (710) 326·6509 • TELEX 95·1064

20

4·59

PRINTED IN U.S.A.

2N6249 2N6250 2N6251

Resistive Turn·Off Time

Resistive Turn·On Time
'10

1000

100·C
500

I"

~ ~

.
.s
III

'\ ~ r-.;I'-

200

I"~

100

l-

loo·c

t,

2r.c
2.0

III

t.

:Iii

I;.I1II f"!!=

;::

.S

.2

l'l-llrl
Ie -

1

2

5

10

.2

t,

....

-;c'""-

.1

20

COLLECTOR CURRENT (A)

-r

/

loo·C

.2

I

~

,~

"

vcc = 250V

10

,'\

"-

.3 1.0

2S·C

!,,_S

I'
I'

II

l00"C

20

r-

~",,:,,5_
111=-112

'U

:Iii

50

Vep, ,,25OV

'i;.--

I i"-

2S·C-

........

r-.

j:

-....

5.0

.5

5

"" '"
10

20

Ie-COLLECTOR CURRENT (A)

Switching Time Test Circuit
200V

RI1

P.W.=2SI'S

UNITRODE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4·60

PRINTEO IN U.S.A.

POWER TRANSISTORS

JAN, JANTX, & JANTXV 2N6306
2N6307
JAN, JANTX, & JANTXV 2N6308

8 Amp, 700V,
Triple Diffused NPN Mesa
FEATURES
• Collector-Base Voltage: up to 700V
• Peak Collector Current: 16A
• Rise Time: ::; 600ns l @ I =3A
• Fall Time: ::; 400ns f
c
• JAN, JANTX, & JANTXV available in
• 2N6306 and 2N6308

DESCRIPTION
These high voltage triple diffused glass
passivated power transistors combine fast
switching, low saturation voltage and rugged
Es/b capability_ They are designed for use in
off-line power supplies, high voltage inverters,
switching regulators, ignition systems and
deflection circuits_

JAN, JANTX,
& JANTXV
2N6306

ABSOLUTE MAXIMUM RATINGS·
Collector-Base Voltage, VCBO .
Collector-Emitter Voltage, VCEO
Emitter-Base Voltage, VEBO
Collector Current, Ic continuous .
Collector Current, ICM, peak
Base Current, IB, continuous
Power Dissipation, Pr 25'C Case
Operating and Storage Temperature Range

50OV.
250V ..
... SV ..
SA
16A.
4A
. 125W

2N6307

600V.
300V .. .
SV.. .
.. SA
.16A... .
... 4A .. .
.. l25W.
.. -65 to +200'C ...

JAN, JANTX,
&JANTXV
2N6308

............ 700V
..350V
.................. 8V

........... SA

.16A
..... 4A
......... 125W

• JEDEC registered values.

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N6306
2N6307
JAN, JANTX, & JANTXV 2N6308

NOTE:
Leads may be soldered to within
1/1&" of base provided temperaturetime exposure is less than 260'C
for 10 seconds.

F

'ffrl' I ~.L
~[J
B

C

D

1

H
I

i'

@

J-i:'
K

A
B

M
BASE
EMITTER

L

c
D
E
F
G
H
J
K
L
M

ins.

mm.

.875 MAX
135 MAX.
250 .450
.312 MIN
038- 043 DIA.
188 MAX RAD.
1.177 1.197
655- 675
205- 225
.420- 440
.525 MAX RAD
.151-.161 DIA

2223 MAX .
3.43 MAX
6.35-11.43
7.92 MIN .
0.97-1.09 DIA.
478 MAX. RAD.
2990-304D
16.64-17.15
5.21-5.72
10 67-11.18
13 34 MAX. RAD .
3.84-4.09 DIA .

4-61

TO-204AA (T0-3)

~UNITRDDE

4

JAN, JANTX, & JANTXV 2N6306
2N6307
JAN, JANTX, & JANTXV 2N6308
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)*
J, JTX, JTXV 2NG30G

Symbol

Test

I 2NG307 I J, JTX, JTXV 2NG308

MIN.

MAX.

MIN.

Test Conditions

MAX.

MIN.

MAX.

D.C. Current Gain (Note 1)

h'E

15

75

15

75

12

60

Ic =3A,VCE =5V

4

-

4

-

3

-

I c =BA,VCE =5V

Units

D.C. Current Gain (Note 1)

h'E

Collector Saturation Voltage
(Note 1)

VCE(sat)

-

O.B

-

1.0

-

1.5

V

Ic = 3A, I. = 0.6A

Collector Saturation Voltage
(Note 1)

VCE(slItl

-

5.0

-

5.0

-

-

V

Ic = BA, I. = 2A

Collector Saturation Voltage
(Note 1)

VCE {,,'}

-

-

-

-

-

5.0

V

Ic = BA, I. = 2.67A

Base Saturation Voltage (Note 1)

VBElsat)

-

2.3

-

2.3

-

-

V

Ic=BA,IB=2A

Base Saturation Voltage (Note 1)

VBE {",}

-

-

-

-

-

2.5

V

Ic = BA, I. = 2.67A

Base-Emitter Voltage (Note 1)

VBE Cool

-

1.3

-

1.3

-

1.5

V

Ic = 3A, VCE = SV

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO {SUS}

250

-

300

-

350

-

V

Ic = 100mA, IB = 0

Emitter-Base Cutoff Current

lEBO

-

1.0

-

1.0

-

1.0

mA

-

0.5

-

-

-

-

-

0.5

-

-

-

-

-

-

0.5

-

O.S

-

-

-

-

-

0.5

-

-

-

-

0.5

-

-

Collector Cutoff Current

Collector Cutoff Current

Collector Cutoff Current, 150·C

ICEO

ICEV

ICEV

-

-

-

-

2.5

-

-

-

2.5

-

-

-

-

-

-

-

2.5

-

IBO

-

1BO

-

250

-

250

-

Second Breakdown Energy

Es/b

1BO

Collector Capacitance

Cob

-

Gain-Bandwidth Product

5

fr

-

5

-

5

VEB=BV
VcE =2S0V

mA

VCE = 300V
VCE = 350V

mA

VCE=SOOV}
VCE =0 600V V. E= -1.SV
VcE =700V

mA

VCE=SOOV}
VCE = 600V V. E= -1.5V
VCE = 700V

mJ

Ic = 3.0A, L = 40 mH
RBE = 3Kf!, VBB2 = I.5V

250

pF

VCB = 10V, IE = 0, f = 1 MHz

-

MHz

Ic = .3A, VCE = lOY, f = 1 MHz

Switching Speeds:
Rise Time

tr

-

0.6

-

0.6

-

.0.6

I'S

Vce = 125V, Ie = 3A
1. , =0.6A

Storage Time

t,

-

1.6

-

1.6

-

1.6

"s

Vcc = 125V, Ic = 3A
I" = 0.6A, 1. 2 = 1.5A
Pulse Width = 25"s

Storage Ti me

t,

-

O.B

-

O.B

-

O.B

I'S

Vce = 125V, Ic = 3A
1. , = 0.6A, 1.2 = 1.5A
Pulse Width = 5.0 "s

Fall Time

t,

-

0.4

-

0.4

0.4

I'S

Vcc = 125V, Ic = 3A
I" = 0.6A, 1. 2 = 1.5A

ReJc

-

1.0

-

1.0

-

1.0

·C/W

Thermal Resistance
Notes:
1. Pulse width; 250pS; duty cycle :51 %.

2. Sustaining Voltage. Measured at a high current point where collector-emitter voltage is lowest. Current pulse length'" 50pS; duty cycle :5 1%.
Voltage clamped at maximum collector·emitte" voltage .
• JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (GI7) 8Gl-G540
TWX (710) 326-G509 • TELEX 95-IOG4

4-62

PRINTED IN USA

JAN, JANTX, & JANTXV 2N6306
2N6307
JAN, JANTX, & JANTXV 2N6308

Power Derating

Forward Bias Safe Operating Area
100

20rrrn'--r-r-'-r""rr-.-'-.~~

...z~
"'

loi i i~i i oi.~i~ i~i i ~ i~;~:i~ ·~ - ~ ~

0:
0:

..J
..J

u

lu

Te

'"

";::z
'"'"

25'C

0

...
Z

"'

,
1\

0:
0:

60

~cl

~1t
~<"0

I III

DASH LINES ON SOAR CURVES ARE EXTENSIONS Of

DISSIPATION LIMITS FOR TEMPERATURE DERATING

1\

Slj

""'\

PURroSES'1

1 1 III ' \
0.2 LLl..l..1L--.L...L-L....L..L.l.LLJ..L.:L.L.....LLl.......l.-l
5
10
20
50
100
200
500
VeE - COLLECTOR VOLTAGE (V)

o

"

Dlssr~A-'

AT DESIRED OPERATING VOLTAGE, DERATE
liON CURRENT LIMIT AND Is b CURRENT LIMIT FROM
2S"C SOAR CURVE

0

I I LiM:TED~-+-\--+-+-I

I IIII

40

20

::>

'

•

'" {/-t"

0:

1\ '

CURV~~#6~:E:ELOW

0.5

I!'I!'

...

0

III

III

"'o

"-

80

0:

t\'

§

u

1,\1"r\. ~'~ ....;:,.~()

~

DISSIPATION ...._!--'!I'\~-H\4-I-'~dH-'...::,!l..l'0'+-1
LIMITED
~,

::>
u
0:

'"

t--...

I
I
I
I
40
80
120
160
Te - CASE TEMPERATURE ('C)

o

1,\
200

Saturation Voltages

D.C. Current Gain
200
lell, _5
100

z

;;:

"...

150'C
50

z

"'0:0:
::>
u

20

U
ci 10

~

25'C

-,

-55'C

-- -....

" ,

n

10- I-

,

"..."''"

0.5

F25'C

>
0.2

st

'lJ·C

r-

---

2

0.1

0.1

Vee- 10V
Vee = 3V

0.2
0.5
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

~
55'C

.05
0.1

10

4-63

V //

'j

0

~I'

/j

I-isQ·C

..J

1

VBEe;;~ ~I'

55'C

~

...

--

I-"'"

0.2

.....V

/\JCEISAT)

"/

0.5
Ie - COLLECTOR CURRENT (A)

10

PRINTED IN U.S A.

JAN, JANTX, & JANTXV 2N6306
2N6307
JAN, JANTX, & JANTXV 2N6308

Switching Time Test Circuit
R _ 125V
l~
Ie
RB2

125V

= 5V

I"

RBI

= ~v

-RB2

"

IN5802

Turn·On Time

Turn·Off Time

1000

500

"'"'"

..
5

UJ

:;

Vee = 125V
leI I" =5
leI I" =2
T J = 25"C

,,",

......
I.

100

I,

~ i--"

..!:.

i'.

;:

50
0.2

20

10
0.1

Vee - 125V
lell,= 5
VBE \ofl\=5V
T J = 25"C

........
If

0_1

......

..... ~

.05
0.2
0.5
Ie .,.. COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10

0_1

0.2
Ie -

4-64

0.5
COLLECTOR CURRENT (A)

10

PRINTED IN U.S.A.

JAN,
JAN,
JAN,
JAN,

POWER DARLINGTONS
5 Amp, 150V, NPN

FEATURES
•
•
•
•

JANTX
JANTX
JANTX
JANTX

& JANTXV 2N6350

& JANTXV 2N6351

& JANTXV 2N6352
& JANTXV 2N6353

DESCRIPTION

High Current Gain: up to 2000 min. @ Ie = 5A
Low Saturation Voltage: as low as 1.5V max. @ Ie = 2A
Peak Current: to lOA
JAN/JANTX/JANTXV versions meet MIL-S-19500/472

Unitrode NPN Darlingtons consist of a
two transistor circuit on a single
monolithic planar chip. The 2N6350
series is characterized for fast switching applications.

ABSOLUTE MAXIMUM RATINGS
TO·33
JAN. JANTX
& JANTXV
2N6350

3 PIN TO-66
JAN. JANTX
JAN. JANTX
& JANTXV
& JANTXV
2N6352
2N6353

JAN. JANTX
& JANTXV
2N6351

Collector-Emitter Voltage ................................ BOV ...•.•.• 150V ................................ BOV ...•••.. 150V .. .
Emitter-Base Voltages
VEB2 .................................................. 6V .......... 6V ................................. 6V .......... 6V .. .
VEBl ................................................. 12V ......... 12V ................................ 12V ......... 12V .. .
D.C. Collector Current. .................................... 5A .......... 5A ................................. 5A .......... 5A .. .
Peak Collector Current ................................... IOA ......... IOA ................................ lOA ......... lOA .. .
Base I Current ......................................... O.5A ..... '" O.5A ............................... O.5A ........ O.5A .. .
Power Dissipation
25°CAmbient ........................................ 1W .......... lW ................................. 2W .......... 2W .. .
100°C Case .......................................... 5W .......... 5W ............................... 25W ........ 25W .. .
Thermal Resistance
Junction-to-Case .......................................................................................................... .
Operating and StorageTemperature Range .................................................................................... ..

MECHANICAL SPECIFICATIONS
JAN. JANTX & JANTXV 2N6350

~

ElJ

,

'~- ~~ ;1~~
G

305-335
335-370
240- 260

);

COLLECTOR

A

JAN. JANTX & JANTXV 2N6351

0

M'"

E

OlH

gg~

15 MIN
018 MAX

031 t 003
200
lOO
029-045
lOO

BASE 1

-L

TO-33

775-851
851-940
610-660

432:t·~~
3810 MIN
046MAX
079:1: 08

lO2
254

074-114
254

COLLECTOR CONNECTED TO CASE

JAN. JANTX & JANTXV 2N6352

JAN. JANTX & JANTXV 2N6353

,

250-340

635-864

B

620 MAX

1575MAX

C

050-075

190-210
190-210

127191
071-086
914MIN
2433-2443
483-533
483-533

350 MAX RAD
570-590

889 MAX RAO
1448-1499

028- 034
360 MIN

F
G
H

J

COLLECTOR CONNECTED TO CASE

"

958- 962

142-152

361-386

145 MAX RAD

368MAX RAD

4-65

3 PIN TO-66

~
[1JJ UNITRODE

•

ELECTRICAL SPECIFICATIONS (at 2S"C unless noted)

JAN & JANTX 2N6350

JAN & JANTX 2N6351

JAN & JANTX 2N6352

JAN & JANTX 2N6353

MIL-STD-750
Test

Visual and Mechanical
25'C
Collector-Emitter Breakdown Voltage
2N6350, 2N6352
2N6351, 2N6353
Emitter Base Breakdown Voltage, Base 1
Emitter Base Breakdown Voltage, Base 2
Collector - Emitter Cutoff Current
D.C. Current Gain
2N6350, 2N6352
2N6351, 2N6353
D.C. Current Gain
2N6350, 2N6352
2N6351, 2N6353
D.C. Current Gain
2N6350,2N6352
2N6351, 2N6353
Collector Saturation Voltage
2N6350, 2N6352
2N6351, 2N6353
Base Saturation Voltage
A.C. Current Gain

Symbol

Min.

Max.

Units

BVeER

BVEBO '
BV EB02
,CEX
hFE

80
150
12
6
1.0

Vdc
Vdc
Vdc
Vdc
I'Adc

Method
2071

2000
1000

Ic

3026
3026
3041
3076

'E - 12mA Base 2 Open
'E == 12mA Base 1 Open
VeE ~ BVeER Rating
VCE == 5Vdc; Ic == LOA (pulse)
R8E2 == 1K

3076

VCE == 5Vdc; Ic == 5.0Adc (pulse)
RBE, == 100 Ohms

3076

VCE == 5Vdc; Ic == 10Adc (pulse)
Rm == 100 Ohms

3071

Ic == 5.0Adc, Rm == 100 Ohms
IB' == 5mAdc (pulse)
'B' == 10mAdc (pulse)
Ic == 5.0Adc (pulse), VCE == 5Vdc
Rm == 100 Ohms
VCE == 10Vdc, Ic == 1.0Adc, f == 10MHz
R8E2 == 100 Ohms
VCBI == 10Vdc, 100KHz:;;;; f:;;;; 1MHz
Base 2 open
Vcc == 30V dc; IC == 5.0Adc
See Switching Speed Circuit
Vcc == 30Vdc; Ie == 5.0Adc
See Switching Speed Circuit

10000
10000

hFE
400
200
VCE (sat)
1.5
2.5
2.5

VBE , (on)
IhFEI

5

Vdc
Vdc
Vdc

3066
3066

25

== 25mA, RBE , == 2.2K, R8E2 == 100 Ohms

30n

2000
1000
hFE

Test Conditions

See Mechanical Data

COBO'

120

pf

3236

Turn-on Time

too

0.5

I'S

3251

Turn-off Time

toff

1.2

I'S

3251

150'C
Collector-Emitter Cutoff Current

,CEX

1.0

I'Ade

3041

VEB , == 2Vdc, Rm == 100 Ohms
VeE ~ BVeER Rating

-65'C
D.C. Current Gain
2N6350, 2N6352
2N6351, 2N6353

hFE

3076

VeE == 5Vdc, Ic == 5.0Adc (pulse)
REEl == 100 Ohms

Output Capacitance

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

400
200

4-66

PRINTED IN U.S.A.

JAN, JANTX & JANTXV 2N6350

JAN, JANTX & JANTXV 2N6351

JAN, JANTX & JANTXV 2N6352

JAN, JANTX & JANTXV 2N6353

Forward Bias
Safe Operating Area
2N6352, 2N6353

Forward Bias
Safe Operating Area
2N6350, 2N6351
10

"-

~'\

"- '\ I
1"'- .~ ~ '\ \ 1\

10

lO,uSec,1%

5

'"1"'-~~ 1\

DC ' "

0:
0:

a

1

1m Sec
2S% Duty Cycle

o
~

.2

8

.1

I-

Im5ele, lOr'
100~5ee,

I

P\ 1\

10%

_0.05

-Duty Cyre

:>

Im5ec,10%

0:

0

....
u

.2

w

..J
..J

1\

1
_0

.02

.OS

\

.02

\
I

10 20
SO 80 ISO
COLLECTOR TO EMITTER VOLTAGE (V)

1
VeE -

V"" -

10

10

\\ ''',

"

.~

T. = 2S'C

i'

,\

0;-

.S
.2

.....

~

/

, 1....

" .....

Limit per
c .1 - MIL-S-19S00/472
@VB1E =-4V,
~
R",=IK_
.OS -

()

:>

...J

1

.02

J

...

"

1

r--

'"

5:
~

I

W
0:
0:

a

8JG::::: 0,

0

't~
"
¢!

o....

M

1

.2

..J

(oa.? I--::::

""~?t>l..
OJ.?

.01

.S

0:

.......

\,j- ,-", 1"- .......
>\>..... [

+c=100'C RIlE :s:;; lOon

5

IC/loo_

5

.1

I

.OS

()

2N63S0,
2N63S2

_0

,

1

1

3
Ie -

=

-112

Valid for VIlE
from 0 to -SV

,'-.

()

z
«
....

,

'"

=

lB.

" "-

\

S
1020
SO 80 ISO
COLLECTOR TO EMITTER VOLTAGE (V)

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

Unclamped Reverse Bias
Second Breakdown

w

I

.01

4
S
6
7
8
COLLECTOR CURRENT (A)

1

10

2
VeE -

SO 8090 ISO
S 10 20
COLLECTOR TO EMITTER VOLTAGE (V)

D.C. Current Gain
2N6351,2N6353
10,000

SO,OOO

V r--- "-

5,000
20,000

«

I.v

10,000

"~

5,000


-<.q

/

W

V V

:>

<.i
ci

I

SOO

/

if

.s::

200

/1-

V

100

/

"v

V

-<.~ fJv

.L

- "~

~~/

z

«

"z....

1\
i""'"'

w

0:
0:

()

<.i
ci

/

veE

I

= 5V

if

.s::

R,,, = 1000 f1

/

SOO

l0

100
50

v:: V/

V/v

/
/

-

"-;c

V

~
\

'l'

-<.ql

...-:;-",~f><;

veE = SV
RazE = lOO{l-

I I

20

V
SO
.01

/-<."

1,000

200

~
/'

f.- ~

-<", r-;v

2,000

:>

/

/v

/

2N63S1,
2N63S3

.02

D.C. Current Gain
2N6350, 2N6352

z

100#5ec
10%

.01

.01

"'~"

1\ ~

100#50c
1% -

1\ \

.1

0

\

()

1\1-- 2N63S1

2N63S0-o

I

.S

()

1\

1,\

ImSec, 25%

W
0:
0:

lOOj.tSec,
1%

Te= l00'C

,\-10#sec
1%

2

....
z

'\"\..

.5

0:

5:

~ "- f\
~\ 1\

I-

Z
W

,
D~ 1"'- N
h k l\ ~
,,
~

i"'-l"-' ['...

Tc = 100°C

10
.02

.0S.1
.2
.S 1
2
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION· S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6S40
TWX (710) 326-6S09 • TELEX 9S-1064

5

10

.01

4-67

.02

.OS.I
.2
.5
I
2
Ie - COLLECTOR CURRENT (A)

S 10

PRINTED IN U.S A.

•

JAN. JANTX & JANTXV 2N6350

JAN. JANTX & JANTXV 2N6351

JAN. JANTX & JANTXV 2N6352

JAN. JANTX & JANTXV 2N6353

Saturation Voltage
Temperature Coefficients

Saturation Voltages

i-\,'0- "m._ "

1.1
:

.1

Ie

i

=

I. ~

\

"

.1

.2

:>

+3

E

'C/IOOO

U)

I-- +2

z

--

V"
~ f...--

"'

U +1
ii:

"'U0
"':Jc:

V;

'/
./

-1

I--

r---

. = --=+-£"

INcE

"'I--

-3

I

-4

~

.1

.5
2
COLLECTOR CURRENT (A)

.2

Ie -

IB

~

0

e

.2

V

u

~

~ r-

V

r-t-

"':;;

;::

~.III Tilm~. ~f

1y

'"

'tl

ill

'"

25'C

~

8

'"

I

.~

~,,,,e'\7
\I.,.e f--:':'

.s .5
"':;;

150'C.,.----::

;::

- - 25'C

"'t-.

.5
Ic -

.2

2
COLLECTOR CURRENT (A)

2N6351

2N635D & 52 Switching Speed Circuit

&

.5

:-:::,..:::::

,/""

~

Delay Time, td

~

0.5

-

----V

~or~ge Time, tl

I---- I~

Vcc = 30V
lal=-Is:z=IC/250

'tl

.1 f--25'C

~

i---t-

150'C

IC/250

RB2E

u

10

Switching Speed
Characteristics

V~c '= ~riv
=
= loon

f-

~Ct025'C

-5
10

(A)

Switching Speed
Characteristics
.05

L

y /V

AVSf:

>
(2%

II--

=

_
~

2. Outpulwaveformsare mOnitored on an
oscilloscope wIth the followmg character.s!lcs,
I,:;;; 15 ns, Z" ~ 10 Mil, C,n';;; 11 5 pF.
Resistors shall be nomnductivetypes.

J

0.5

---:::::I;;;;ii ~

I--~
f---l -

------- ,-- ~ ~1'

~ ..--

.3f--

V': V

V
~
.01/V

~

~

=

:r

0 J . c (t) ,(t)-eJ _C
0 J •c = 4'C/W

f~' 2~63sr' 2~56513

~
Single Pulse

7~rc 2N~~;./~565~

.005
.002

The DC power supplIes may require additional
by-passlne: '" order to minimize nnglng.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

.001
.01 .02

4-68

.05 .1

.2

.5 1 2
10 20
TIME (milliseconds)

50 100 200 5001000

PRINTED IN U.S.A.

JAN, JANTX & JANTXV 2N6350

JAN, JANTX & JANTXV 2N6351

JAN, JANTX & JANTXV 2N6352

JAN, JANTX & JANTXV 2N6353

•

D.C. Current Gain VS. Collector Current
2N6350 - 2N6353
10,000 , . . - - - - - - , - - - - - - , - - - - - ,

z

~

z

1000

i-----:71/r ---j::::===:::::-i

100

~"c--r'----t------t----------l

"'

0:
0:
:J
U

U

o
I

10

.1

.01
Ie -

1.0

10

COLLECTOR CURRENT (A)

2N6350 & 52 Switching Speed Circuit

2N6351 & 3 Switching Speed Circuit

1-10"4
- 10%- -

- -90%
- -INPUT WAVEFORM
: (SEE NOTES 1 AND 2)

ov -ltonl- -l toll Ij ~~froo;o
9 0 % - U J ?S~¥~6T~A~EFORM

- 10%- -

ov

---+i

- -90%
- -INPUT WAVEFORM
: (SEE NOTES 1 AND 2)

---It..,:- -l to" lI

I

+30Vdc

10%
OUTPUT WAVEFORM

+30Vdc

(SEE NOTE 2)

I

611

60
SCOPE
(SEE

SCOPE
(SEE
NOTE 2)

NOTE 2)

SOli
PULSE
IN
o---'\IV'V--+---'\./VIr-+--o--{
B,

B,

Ik!!

lOa!!
-lOVdc

-lOVdc

NOTES:
1. The input waveform is supplied by a pulse
generator with the following characteristics:
t; :s:;;; 15 ns, t f ~ 15 ns, Zod ::::: 500, PW ::::: 10 p.S,
Duty cycle S;; 2%.
2. Output waveforms are monitored on an
oscilloscope with the following characteristics:
tr ~ 15 ns, lin ~ 10 MQ, C,n ~ 11.5 pF.
3. Resistors shall be non inductive types.
4. The DC power supplies may require additional
by-passing in order to minimize ringing.

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

4-69

PRINTED IN U.S.A.

2N6354
2N6496

POWER TRANSISTORS
20 Amp, 150 V, Double Diffused NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•

These double diffused glass passivated
mesa power transistors combine fastswitching, low saturation voltage and
rugged Es/b capability. They are designed for use in switching regulators,
converters, inverters and switchingcontrol amplifiers.

COllector-Base Voltage: up to 150V
Peak Collector Current: 30A
Rise Time: ~ 500ns t
Fall Time: ~ 500ns I @ Ie up to 12A

ABSOLUTE MAXIMUM RATINGS*
2N6354

2N6496

Collector-Base Voltage, VCBO ............................................................................................................. 150V .. .
150V
Collector-Emitter Sustaining Voltage, VCER (SUS) (1) ............................................................. - .. .
130V
VCEQ (SUS)
120V.
Emitter-Base Voltage, VEBO .................................................................................................................. 6.5V.
. ..7V
Collector Current, Ie continuous ....................................................................................................... 1OA ... .
.l5A
Collector Current, ICM peak ...................................................................................................................12A
Base Current, IB continuous .................................................................................................................. .5A .
..5A
Power Dissipation, 25'C Case ............................................................................................................ 140W...
.140W
Operating and Storage Temperature Range ........................................................................................-65 to 200'C

nov

(1) With RBE ~ 50n

* JEOEC

registered values.

MECHANICAL SPECIFICATIONS

2N6354, 2N6496

NOTE:
Leads may be soldered to within
'A." of base provided temperaturetime exposure is less than 260'C
for 10 seconds.

F

~WE I \\ I
/,

1

G

H
I

C

D

A
B

M

,

BASE

c

EMITTER

0

E
F

G

,:,"--.:

@

J-~

7

L

H

J
K
L
M

ins.
.875 MAX.
.135 MAX.
.250-.450
.312 MIN.
038- 043 DIA.
. 188 MAX RAD
1.177-1.197
.655- 675
'.205-.225
.420-.440
.525 MAX. RAD.
. 151-.161DIA.

4-70

TO-204AA (TO-3)

mm.
22.23 MAX .
3.43 MAX .
6.35-11.43
7.92 MIN .
0.97-1.09 DIA.
4.78 MAX. RAD .
29.90-30.40
16.64-17.15
5.21-5.72
10.67-11.18
13 34 MAX. RAD .
3.84-4.09 DIA .

~UNITRODE

2N6354

2N6496

Electrical Specifications (at 25°C unless noted)
2N6354
Test

D.C. Current Gain
(Note 1)

hFE

D.C. Current Gain
(Note 1)

hFE

D.C. Current Gain
(Note 1)

2N6496

MIN. MAX. MIN. MAX.

-

-

10 100

hFE

-

-

-

-

0.5

VCE I"')

-

-

VCE I"')

-

1.0

Collector Saturation
Voltage (Note 1)

-

VCE

,.....

-

Base Saturation
Voltage (Note 1)

VBE I"')

I"')

VBE

{sat)

-

-

-

-

V

Ic = 0.2A
VBE = -1.5V
IB=O
RBE = 100 n

V

RaE = 50 n, Ic = 0.2A
RaE = 100 n, Ic = 0.2A

V

IE= 5mA
IE - 50mA

-

Collector-Emitter
Sustaining Voltage
(Note 2)

VCEX

(sus)

-

-

-

Collector-Emitter
Sustaining Voltage
(Note 2)

(sus)

130

-

130

VeER

Emitter-Base Voltage

VEBO

Collector Cutoff
Current

ICBO

Gollector Cutoff
Current

-

ICEO

-

-

S

-

20

Collector Cutoff
Current

ICEV

- - - - 10

Collector Cutoff
Current, 125°C

ICEV

-

20

-

-

Collector Cutoff
Current, 150°C

ICEV

Emitter Cutoff
Current

lEBO

Magnitude of Small
Signal Forward. Current Transfer
Ratio
Collector Capacitance
Thermal Resistance:
Junction-to-Case

-

-

5.0

-

-

Ihr. I

-

-

8.0

-

Cob

-

300

RoJC

-

-

-

1.25

2.0

-

-

-

-

-

7.0

- - 20
- - - 25
- - - 50
12 - - 300
- 1.25
- -

V
V

mA
mA

mA

mA
mA

mA

=
=
=
=

l2A, IB = 1.2A
20A, IB = 5A
5A, IB _ O.5A
8A, IB = 0.8A
lOA, IB _ 1A
20A, IB = 5A

Ic=0.2A

120

-

•

Ic = lOA, IB = LOA

V

(sus)

-

V

V
V

VCEO

-

V

2A, VCE = SV
5A, VCE = 2V
8A, VCE _ 2V
lOA, VCE = 2V
lOA, VCE = 5V
l2A, VCE = 5V
5A, IB = .5A
8A, IB = .8A

Ic =
Ic =
Ic Ic =
Ic Ic =
Ic =
Ie =

- 100 -

2.0

6.5

-

Test Conditions

Ic
Ic
Ic
Ic
Ic
Ic

-

-

-

-

- 1.0
- -

-

-

-

12 100

_.

1.3" -

-

Units

- -

-

20 150

Collector Saturation
Voltage (Note 1)
Collector Saturation
Voltage (Note 1)

Base Saturation
Voltage (Note 1)
Collector-Emitter
Sustaining Voltage
(Note 2)

*

Symbol

VCB = 150V
VCE =
VCE =
VCE =
VCE VCE =
VCE VCE =

5SV
70V
100V

nov, VaE - -1.5V
130V, VBE = 0
l40V, VBE - -1.SV
l40V, VBE = 0

VCE = l40V
VCE = 85V, VaE = -1.5V
VCE - 100V, VBE _ -l.SV
VCE = 130V, VBE = OV
VBE = -5V
VB =-6.5V
VBE = -7V
VCE = 10V, Ic = 2A, f = 5 MHz
VCE = lOV, Ic = lA, f = 10 MHz

pF
°C/W

VCB = 10V, f = 1 MHz
VCE = 10V, Ic = lOA
VCE - 20V, Ic - lA

Notes:
1. Pulse width; 2501lS; duty cycle :S1 %.
2. Sustaining Voltage. Measured at a high current point where collector-emitter voltage is lowest. Current pulse
length"" 501lS; duty cycle :s 1%.
Voltage clamped at maximum collector-emitter voltage .
• JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-71

PRINTED IN USA

2N6354

2N6496

Electrical Specifications (at 25°C unless noted)
2N6354
Symbol

Test

Second Breakdown
Energy

*

0.3

-

-

-

-

5.7

-

Eslb

Forward Bias
Second Breakdown
Collector Current
Switching Speeds
Rise Time
Storage Time
Fall Time
Rise Time
Storage Ti me
Fall Time
Rise Time
Storage Ti me
Fall Time
Rise Time
Storage Time
Fall Time

2N6496

Units

MIN. MAX. MIN. MAX.

-

-

-

5.5

-

-

-

5.0
0.9

-

Islb

-

t,
t,
tf
t,
t,
tf
t,
t,
tf

-

0.3
1.0
0.2

-

- - - - - -

t,
t,
tf

-

mJ

-

-

A

-

-

1'5

0.5
1.5
0.5

fiS

-

-

fiS

fiS

Test Conditions

=
=
=
=
=

=
=
=
=
=

Ie
5A, VBE
-l.OV
RBE
51 n, L
25.. H
Ie - 8A, VBE _ -4.0V
RBE
20 n, L
180.. H
Ie
13A, VBE
-4.0V
RBE
20 n, L
180.. H
VeE - 25V, t _Is, non-rep.
VeE = 28V, t _ Is, non-rep.
VeE - 45V, t _ Is, non-rep.

=
= =
=
=
=
=
= =
=
= =
=

Ie
SA
IBI
I" .SA
Vee
30V
Ie
8A
IB'
I" = .8A
Vee
30V
Ie - lOA
IBI I" l.OA
Vee
30V
Ie _12A
IBI I" l.2A
Vee
30V

* JEDEC registered values.

Forward Bias Safe Operating Area
for 2N6354

,
30

I

20

~
I-

II

r-!0"'~"'.!'

10

Z

f=
'--

'UJ

'"'"
e.>

Forward Bias Safe Operating Area
for 2N6496

DISSIPATlON·O'" ~.!'
LIMITED
'~

,

~

\

'"

0

,~I

,... r:==

~I==

'.

l-

e.>

UJ
..J
..J

0

Tc

e.>

\

= 25'C

\

1
_u

ISIb LIMITED
0.5

I

0.3
2

I

10
20
50
100
VeE -COLLECTOR VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

0.3

'----'I~-'-'
1,--,
11..w11u--1-,-,-1--,--,I---'-J..~"----'
100 200
10
20
so

2

200

VeE -

4-72

COLLECTOR VOLTAGE (V)

PRINTED IN U.S,A.

2N6354

Power Derating

DC Current Gain

100

'" "-"-r\.

500

t-....

~

80

'"ua....

.
"
.'"
"-

60

UJ

....Z

.........

'"~

"""-

1'{~

40

20

DASH LINES ON SOAR CURVES ARE EXTENSIONS OF
DISSIPATION LIMITS FOR TEMPERATURE DERATING
PUR,POSES J

o

40
Te -

I--t-

g
"

200

0.2

0.5
Ie -

Saturation Voltages

~

1\

10

1"-

I
I
80
120
160
CASE TEMPERATURE ('CI

~

f..-r20
VeE = 2V

'\

I

o

_SS·c

u

DISSI~A"

AT DESIRED OPERATING VOLTAGE, DERATE
nON CURRENT LIMIT AND 1\ b CURRENT LIMIT FROM
25'C SOAR CURVE

25'C

50

::J

~~o

....

150'C

" 100

!"...;.

~J'ti

z

'"'"
'"
::J
U

z
;;:

',.~o

is'iS'

j::

200

'~{/.f?,

~

Z

c

2N6496

10

20

COLLECTOR CURRENT (A)

Switching Time Test Circuit

II
5V

lell, = 10

5~'C

~

.."::;

T;;

II

~fJ

V8EISIIT)

:6Jl_

150'C

UJ

~4VLJ

0.5

a

>
0.2

I'"

\~i1':~ Vv

0.1

V

PW.

VeE (SAT)

= 25#$

i;'

_"",c

.05
0.2

0.5
I,. -

10

20

COLLECTOR CURRENT (AI

Turn-Off Time

Turn-On Time
1000

-

Vee = 30V
500

200

'"
oS

'"j::

:;;

r-t-

" r-.

lSI

I"-

/

I" "-

t,

'":;;

100

182

= 1C/1O

-

-

TJ = 25'C

t:'r--.

....3

..........

=

0.5

j::

50
0.2

N

f--

Vee =30V
20 ~ ISI=lc/IO
f-- TJ = 25'C
10
0.2

);-..

0.1

I I I III
0.5
Ie -

I'

1
2
10
COLLECTOR CURRENT (AI

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (6171 861-6540
TWX (710) 326-6509 • TELEX 95-1064

.05
0.2

20

4-73

0.5
Ie -

i-"

1
2
10
COLLECTOR CURRENT (A)

20

PRINTED IN U.S.A.

•

POWER TRANSISTORS

2N6510
2N6511
2N6512
2N6513
2N6514

7 Amp, 400V, Triple Diffused NPN Mesa
FEATURES

DESCRIPTION

•
•
•
•

These high voltage triple diffused glass
passivated power transistors combine fast
switching, low saturation voltage and rugged
Eslb capability. They are designed for use in
off-line power supplies, high voltage inverters,
switching regulators, ignition systems and
deflection ci rcuits.

Collector-Base Voltage: up to 400V
Peak Collector Current: IDA
Rise Time: ;;;; 1.5",s l @ I _ 4A
Fall Time: ;;;; 1.5",s f
c-

ABSOLUTE MAXIMUM RATINGS
2N6510

(1) RaE

2N6511

.. 250V ...
. .250V ..
200V ..

'Collector Base Voltage, VCPo
Collector-Emitter Sustaining Voltage, VCER 1",1 III
'Collector-Emitter Sustaining Voltage, VCEO Isusl .. '
"Emitter-Base Voltage, VESO
'Collector Current, Ic continuous
'Base Current, Is
'Emitter Current, IE"
.... .......... .
'Power Dissipation, PT 25"C Case
'Operating and Storage Temperature Range

2N6512

2N6513

3OOV..
350V..
. . 400V ... .
300V...
.. 350V...
..400V ... .
. 250V.... . ... .... 300V..
. .. 350V .. .
.. 6V..
....6 V . . . ....6V ..... .
... .7A..
........... .lA...
...... .lA .... .
.. IDA................. 10A.
... IOA
........3A ..................3A . ....
...... 3A .. .

. .. 6V.
..7A....
.. IDA.
...... 3A..

... .. 120W...

l20W

2N6514

350V
350V
.. 300V

... 6V
. ... .lA
.. IOA
.... 3A

...... l20W .. ..... .... 120W .. ........ 120W
-65 to +200"C.

=SOil

*JEDEC registered values

MECHANICAL SPECIFICATIONS

2N&51 0 2N6511

NOTE:
Leads may be soldered to within
'It..' of base provided temperature·
time exposure is less than 260"C
for 10 seconds.

~iJE
C

D

A
B

F~M

17EJ .-

G

I

H

i'

Ie

J-~

7

BASE

c

EMITTER

D

E
F
G

L

H

J
K
L
M

2N6512 2N&513 2N6514

ins.
875 MAX
135 MAX.
250 450
.312 MIN
038- 043 DIA.
188 MAX RAD.
1177-1.197
.655 .675
205- 225
420-.440
.525 MAX. RAD
151-161 DIA

4-74

TO-204AA (TO-3)

mm.
2223 MAX.
3.43 MAX
635-1143
7.92 MIN .
097-1.09 DIA
478 MAX RAD
29.90 30.40
16.64-17.15
521 572
10.67 11.18
13.34 MAX. RAD
3.84 409 DIA

~UNITRDDE

2N6510 2N6511 2N6512 2N6513 2N6514
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
2N6514

2N6510

Test

*D.C. Current Gain (Note 1)
'Collector Saturation Voltage
(Note 1)

Symbol

Min.

Max.

Min.

Max.

10
-

SO
1.S
2.S
1.7
-

-

50

-

1.S
2.S
1.7

-

300'

-

V

3S0

-

-

V

-

S.O

-

-

hFE

-

VCE''''I

-

'Base Saturation Voltage (Note 1)

VSE''''I

-

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO ''"'I
VCER ''"'I

250

'Collector Cutoff Current

ICEV

-

'Collector Cutoff Current 100'C

IcEV

-

td
t,
t,
tf

-

'Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time
Delay Time
Rise Time
Storage Time
Fall Time

200·

-

0.2
1.S
S.O
1.5

-

-

-

S.O
10
-

-

td
t,
t,
tf

10

-

-

Units

V

V

mA
mA

10

Test Conditions

Ic _3A,VCE _3V
Ic =SA,VCE =3V
Ic = 3A, Is = 0.6A
Ic = SA, Is = lA
Ic=7A,ls=3A
Ic = 3A, Is = 0.6A
Ic=SA,ls=lA
Ic=0.2A
Ic = 0.2A, RSE = son
VCE = 2S0V, VSE - -1.5V
VCE = 3S0V, VSE = -l.SV
VCE = 2S0V, VSE = -1.SV
VCE = 350V, VSE = -1.5V

-

"s

VCC= 200V
Ic =3A
lSI = IS2 = 0.6A

0.2
1.5
S.O
1.5

pS

Vcc=200V
Ic =5A
lSI =l s2 =lA

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)'
2N6511

Test

Symbol

Min.

Max.

*D.C. Current Gain (Note 1)

hFE

10

'Collector Saturation Voltage
(Note 1)

VCE '''')

'Base Saturation Voltage (Note 1)

VSE("'I

-

SO
1.5
2.S
1.7

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO',"'I
VCER (,u,)

250
300

-

'Collector Cutoff Current

ICEV

-

-

'Collector Cutoff Current, 100'C
'Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

ICEV

td
t,
t,
tf

-

5.0

-

2N6512
Min.
Max.

10

300
350

-

50
1.5
2.S
1.7

Max.

10

SO
1.5
2.S
1.7

-

-

3S0
400
-

5.0
-

-

-

-

-

0.2
1.5
5.0
1.5

-

-

0.2
1.5
5.0
1.5

-

10

10

Notes:
1. Pulse width = 250pS; duty cycle $1%.
2, Sustaining Voltage. Measured at a high current point where collector·emitter voltage
Voltage clamped at maximum collector-emitter voltage .
• JEDEC registered values.

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2N6513

Min.

4-75

-

IS

5.0

-

Units

V
V
V
V
mA

mA

10
0.2
1.5
5.0
1.5

I-'S

Test Conditions

Ic =4A,VCE =3V
Ic = 4A, Is = 0.8A
Ic=7A,ls=3A
Ic = 4A, Is = 0.8A
Ic = 0.2A
Ic = 0.2A, RSE = 50n
VCE - 300V, VSE _ -l.5V
VCE = 350V, VSE = -1.5V
VCE - 400V, VSE - -1.5V
VCE = 3OOV, VSE = -1.5V
VCE = 300V, VSE = -1.5V
VCE = 400V, VSE = -1.5V
VCC= 200V
Ic=4A
lSI = IS2 = 0.8A

lowest. Current pulse length'" 501-'5; duty cycle $ 1%,

PRINTED IN U S.A

•

2N6510 2N6511

2N6512

2N6513

2N6514

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)"
All Types

Test
Emitter-Base Cutoff Current

Symbol

Min.

-

'EBO

Magnitude of
Common Emitter
Small-Signal
Short Circuit
Forward Current
Transfer Ratio

Ihfe I

3

Forward-Bias
Second Breakdown

I<

Max.

Units

3.0

mA

Test Conditions

VEB =6V

'c=lA
VCE = 10V
f=lMHz

9

-

A

VCE = 35V, t = Is, non-rep.

0.1

A

VCE = 200V, t = IS,l1on-rep.

Cob

100

200

pF

Vce = IOV, f = IMHz

R6JC

-

1.46

'C/W

3.16

Collector Current

Islb

Collector Capacitance
Thermal Resistance,
Junction-to-Case

VCE = 20V,I c = SA

All values in this table are JEDEC registered.

Power Derating

Forward Bias Safe Operating Area
100

'" ""
~

~

S
I-

a:

W

IU

80

"

0

Z

«

0::

a:

"-

::>
u

<.!l
Z

;::
«
a:

0::

oI-

U

'"c

'"
.J
.J

60

...... ~
u

~HIII~HII--j-r~~L-M~1EHD~-11r~~,~

I II

IS/j II ITIII

\

10

20
50
100
200
VeE-COLLECTOR VOLTAGE (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

AT DESIRED OPERATING VOLTAGE. DERAjE

20

PUiOSESJ

o

500

o

40

I

L
80

L

"

.........

OISSI~A\

TION CURRENT LIMIT AND I, b CURRENT LIMIT FADM
2S'C SOAR CURVE
DASH LINES ON SOAR CURVES ARE EXTENSIONS OF
DISSIPATION LIMITS FOR TEMPERATURE DERATING

\

0.2LL~~--'--'--~~~~LL~L-LL-L~

5

r-...

~4,
~<"0

40

I-

8
I

~,.~O

"'",
~J
~o

1
120

'\

'\

L

160

200

Te - CASE TEMPERATURE ("C)

4-76

PRINTED IN U.S.A.

2N6510 2N6511

2N6512

2N6513

2N6514

Saturation Voltages

D.C. Current Gain
200
lell,-S
100

z
;:c


ls6'c

I-

---

0.1

0.2
Ie -

0.1

VCE _lOV
VeE

=

~

3V

SS'C

O.S
COLLECTOR CURRENT (A)

.05
0.1

10

I. / ./.

I--i5Q.c
-j

0.2

.r:t

2

•

VBEk~ ::::::~

...

2S'C

V ./ /'

. . . .V

-

~

0.2
Ie -

""

/VCEISAT)

/'

0.5
COLLECTOR CURRENT (A)

10

Switching Time Test Circuit
R _ 200V
L-

200V

Ie

R,= SV

~

P.W.

= 25j'S

Turn·Off Time

Turn·On Time
10

1000

Vee 200V
S
ICIlB
I"
I"
T J = 25 C C

500

........

"

.

t,

'"

td

"

;;; 100

-

I--

r--

t,

I---

"';:::

::;:

::;:

;:::

0.5

50

Vee - 200V
20 f- lell, = 5
VB£ (011)
SV
TJ =2S'C
10
0.1
0.2
O.S
Ie - COLLECTOR CURRENT (A)

r-

"

tf

0.2

=

UNITRODE CORPORATION· S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6S09 .. TELEX 95-1064

"-

!'....

_I-"""'

0.1
0.1

10

0.2
Ie -

4-77

0.5
COLLECTOR CURRENT (A)

PRINTED IN USA

10

2N6542
2N6543

POWER TRAI\JSISTORS
5A,850V, Fast Switching,
Silicon NPN Mesa

DESCRIPTION
These high voltage glass passivated power
transistors combine fast switching, low
saturation voltage and rugged Eslb capability_
They are designed for use in off-line power
supplies, high voltage inverters, switching
regulators, ignition systems and deflection
circuits.

FEATURES
• Collector-Base Voltage: up to 850V
• Peak Collector Current: lOA
• Rise Time: ';;;;0.7I'S} @ I - 3A
• Fall Time: ';;;;0.81'5
c• Key Parameters characterized at lOO·C

ABSOLUTE MAXIMUM RATINGS *
2N6542

2N6543

Collector-Base Voltage, VeBo ............................................................................................................................ 650V.............................................. 850V
Collector-Emitter Voltage, VCEO (SUS) .................................................................................................................. 300V............................................
400V
Emitter-Base Voltage, VEBO ..................................................................................................................................... 9V...................................................... 9V
Collector Current, Ic, continuous ......................................................................................................................... 5A...................................................... 5A
Collector Current, Ie peak ........ ....................
....................................................................................lOA ..................................................... IOA
Base Current, IB, continuous ................................................................................................................................ 5A ...................................................... 5A
Power Dissipation, 25·C Case ......................................................................................................................... 100W............................................... lOOW
Derating Factor ..................................................................................................................................................571W/·C....................................... .571W/·C
Operating and Storage Temperature Range ........................................................................................................................-65 to 200·C ......................
• JEDEC registered values.

MECHANICAL SPECIFICATIONS
NOTE:

2N6542 2N6543

Leads may be soldered to within

TO·204AA (TO·3)

l1u" of base provided temperature·
time exposure is less than 260"C
for 10 seconds.

F

~~j'
C

6·79

D

[
G

I

M

.!

BASE

'Q)-

\7I.

11
H
J

~

e-

J-~
1K

EMITTER

N
L

A
B
C
0
E
F
G
H

J
K
L

M
N

ins.
875 MAX
135 MAX
250- 450
312 MIN
038- 043 OIA
188 MAX RAO
1177 1197
655- 675
205- 225
420- 440
525 MAX RAO
151 1610lA
190·210

4-78

mm.
2223 MAX
343 MAX
635-1143
792 MIN
097-10901A
478 MAX RAO
2990 3040
1664-1715
521-572
1067-11 18
13 34 MAX RAO
384-40901A
4.83-533

~UNITRODE

2N6542

2N6543

ELECTRICAL SPECIFICATIONS (at 25·C unless noted)·
Test
D.C. Current Gain (Note 1)

Symbol
hFE

2N6542
MIN.
MAX.
12
60

2N6543
MIN.
MAX.
12
60

Units

Test Conditions

Ic = 1.5A, VCE = 2V

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCEI,.t)

-

1.0

-

1.0

V

Ic = 3.0A, la = 0.6A

Collector Saturation Voltage,
Tc = 100·C (Note 1)

VCEI..t)

-

2.0

-

2.0

V

Ic = 3.0A, la = 0.6A

Collector Saturation Voltage
(Note 1)

VCEI,.tl

-

5.0

-

5.0

V

Ic = 5.0A, la = LOA

Base Saturation Voltage (Note 1)

VBE

sat

-

1.4

-

1.4

V

Ic = 3.0A, la = 0.6A

Base Saturation Voltage,
Tc = 100·C (Note 1)

VaE 1..11

-

1.4

-

1.4

V

Ic = 3.0A, la = 0.6A

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO I",)

300

-

400

-

V

Ic=O.lA,la=O

Collector-Emitter Sustaining
Voltage
Tc = 100· C (Note 2)

VCEX I'u,)

350

-

450

-

V

L = 180,aH, Ic = 2.6A
VaE =-5V
VCE clamped to rated VCEX 1m!

Collector-Emitter Sustaining
Voltage
Tc = 100·C (Note 2)

VCEX I'u,)

200

-

300

-

V

L = 180!'H,lc = SA
VaE lotij = -5V
Vc~ clamp to Vceo -100V

Emitter-Base Cutoff Current

IE•O

Collector Cutoff Current

7

ICEV

35

7

35

-

1

-

0.5

-

-

-

-

0.5

2.5

3.0

1

Ic = 3.0A, VCE = 2V

mA
mA

VEa =9V
VCE = 650V, VaE = -l.SV
VCE = 8S0V, VaE = -1.SV

-

3.0

ICER

-

-

-

Output Capacitance,
Common Base

Cobo

SO

150

50

150

pF

Gain-Bandwidth Product

Fy

6

24

6

24

MHz

VCE = 10V, Ic = 0.2A, f = 1 MHz

Forward Bias Second Breakdown

Islb

200

-

200

-

mA

P.W. = 1 sec. single shot
VCE = lOOV

Energy Second Breakdown
(unclamped)

Eslb

180

-

180

-

,aJ

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

td
t,
t,
tf

-

0.05
0.7
4.0
0.8

-

0.05
0.7
4.0
0.8

"S

Collector Cutoff Current,
Tc = lOO·C
Collector Cutoff Current,
Tc=lOO·C

ICEV

Inductive Switching Speeds
Tc = lOO·C
Storage Ti me
Fall Time

t,
tf

Thermal Resistance,
Junction-to-Case

RSJC

-

-

4.0
0.8
1.75

-

-

2.5

-

mA
mA

4.0
0.8

,as

1.75

·C/W

VCE = 6S0V, VaE = -1.SV
VCE = 8S0V, VaE = -1.SV
VCE = 6S0V, R = SOn
VCE = 8S0V, R = SOn
Vca = 10V, f = 1 MHz

I c =3.OA

L = 40!,H, VSE om = 4.0 Vdc
Ic = 3.0A, tp = 100!,sec
Vee = 250V
Is, = IS2 = 0.6A
VaElofij =5V
I c =3.0A
la = 0.6A, VaE lofij = 5.0 Vdc
VaElolll =5V
VCE clamp = rated VCEX I,u,)

Notes:
1. Pulse width = 250/1S; duty cycle :51 %.
2. Sustaining Voltage. Measured at a high current point where collector·emiller voltage is lowest. Current pulse length", 50/1S; duty cycle :5 1%.
Voltage clamped at maximum collector·emiller voltage .
• JEDEC registered values.

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-79

PRINTED IN U.S.A.

•

2N6542

Forward Bias Safe Operating Area

2N6543

Power Derating
100

"

t-.....

~

J

I-

~ so

,lmS

Power Dissi pationl";/--I\t++tt-~\''\=';J';''-+-+--I
Limited

Z

i'

UJ

0:
0:

0:

0

,'\

r\.

I-

U

...«

10mS

:>

u

I'\. ~

";::z

0:

~
~
...J

60

I

~{/",

~d'd'

~J'1'

«

UJ

0

8

40

I

I-

I I

I

-"

Z

2N6542

6

2N6543

Te = 25
I
: '\.
Curves Apply Belowt-H+++t-t-'~\-IHH
0

.2

II II

I II RaledV eEo

:>

10

20

50

100

20

2!j'C SOAR CURVE
DASH LINES ON SOAR CURVES ARE EXTENSIONS OF

DISSIPATION LlM'Ti FDA TrMPERrURE
PUAPOSES

o

.Iww~~-L~~~-L~LU~~~~LL...J

5

200

~()

AT DESIRED OPER .... TING VOLTAGE.
'\
TION CURRENT LIMIT AND Is b CURRENT LIMIT FADM

u

1\

500

o

VeE-COLLECTOR VOLTAGE (V)

IERAT'NG

z
;;:

I-

...

2N6542~

Cl

0:
0:

0:

:>

0.5

u

u

c.l
0
I

UJ
...J
...J

u

I

100°C

I-

25°C

UJ

u

0

2N6543 0.2

-"

I

20

f-""

55°C

~~
I""'- ~

10

~~

If

.t:

,VBI;

0.1

I

50

Z

:>

I-

j

100

~

0

200

VeE = 5V

!--

0:
0:

I'\.

D.C. Current Gain
200

UJ

'\

J_

40
80
120
160
TC - CASE TEMPERATURE (OC)

Reverse Biased Safe Operating Area

Z

........

DERAT~ OIS51~A

UJ

0:
0:

'-...

'&~

0:

...J

'''~o
r-...

(off)

5

~5V

=Te"; 100°C

2

.05
10

20

50

100

500

200

.05

1000

VeEX 1"'1- COLLECTOR VOLTAGE (V)

0.1

0.2
0.5
2
Ie - COLLECTOR CURRENT (A)

5

Saturation Voltages
Typical
I nductive Load
Switching Performance

I
lell, = 5
2

~

-55°C

UJ

;"

25°

0

> 0.5

z

;::
«0:

/oifC7v'

-

:> 0.2

I-

«IJ)

I -- I-

0.1

0.1

TJ
°c

I.

If.

JLS

nS

tf;
nS

3.0

25
100

.45
.575

70
100

10
20

5.0

25
100

.475
.60

25
45

4
10

8.0

25
100

.525
.625

20
45

10
15

Ie
Amps

,--: 1-.-

55°C
100°C

0

.05
.05

-

Y'BE \s"'1

/

/V

~ /hoc
VeE!s.. ,)

0.2
0.5
Ie - COLLECTOR CURRENT (A)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-80

PRINTED IN U.S.A.

2N6542

Resistive Turn-On Time

Resistive Turn-Off Time

1000

10

25'C

1/

V

"'' "

'efl ,

5

V

t--r---

t.

i'

2

I--

u;

on

.s
UJ

'1' "-

...:i!

100

;::

;::

t.

~

25'C

~

Vee = 125V
'efl, = 5
0.2

0.5
'e -

2

5

0.1
0.1

10

COLLECTOR CURRENT CA)

100'C

Vt.,

....

"f::::

0.2

20

ts

25'C
0.5

50

II

lOO'C

.3

10
0.1

125V
5

Vee

100'C
500

:i!

2N6543

jV

25'C

I
0.2
'e -

0.5
1
2
COLLECTOR CURRENT CA)

10

TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VeE<

VCEO(SUSl

'"

Z

o
;::
oz

+IOV

............... 1

0J"'l...

I-

Atta~n

:::>

~

PW Varied to Attain
Ie = 100mA

1-",
S~

Leod:::: SOmH

O...J

Reod

5:;:

15\?
+175V _

Vel Imp

=:

Vee:::: IOV

O.7n

(Unclamped)

'--*"_1-01
~",=,-"",.-/'iQ4.12

Lw,l

= 180,uH

ReoLi

::::

Q.05n

~

3%

QI 2N6408 Q3 2N5875
Q2 2N6406 Q4 2N5877
Diodes IN4933

Vclamp

::::::

Rated V CEX Value

Vee:::: 20V

lIOCl

4Vfl

0J"'l...

OUTPUT WAVEFORMS
t f Clamped
Unclamped :::: t J

/tf

~~-'.L~t

PW Varied to Attain Ie

Leo" =40/LH
Rco ., =O.2n

Vee

= IOV

(Unclamped)

t, Adjusted to
Obtain Ie

t

=
1

t

See Above For
Detailed Conditions

"'='

2

leo" (lCpk)
Vee
Lcoll (lCpl<)
Vclamp

Test Equipment
Tektronix Scope
475 or Equivalent

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4-81

= +13V

---..0

0JU-

I

--11V~2

'e=3A
PW <;; loo#s

Vel amp

fo:::: 500kHz

INDUCTIVE TEST CIRCUIT

...

L...ji~"""'M-:..1o~-5V

Specified Peak Ie-

Duty Cycle
f=lkHz

I

IB,=O.6A~

O.OI#F
Set +V,n to Obtain a Forced
hfE = 5 and Adjust PW to

o

RESISTIVE SWITCHING

AND 'NDUCTIVE SWITCHING

pwA
-4V

200

U

Il.

(SUS)

Drive Circuit
+4V

tf:s; 5ns
tf:s;;; SOns
Duty Cycle <;; 2%
Vee =250V
RL =83!l
01 = IN5820 or Equiv.
R,=2oo
RESISTIVE TEST CIRCUIT

~

BTUT

I
2~ 01

-5V

RL

.=.Vcc

~

PRINTED IN U.S.A.

POWER TRANSISTORS

2N6544
2N6545

8 Amp, 850V, Triple Diffused, NPN, Mesa

FEATURES

DESCRIPTION

•
•
•
•
•

These high voltage triple diffused glass
passivated pOwer transistors combine fast
switching, low saturation voltage and rugged
Eslb capability. They are designed for use in
off-line power supplies, high voltage inverters,
switching regulators, ignition systems and
deflection circuits.

Collector-Base Voltage: up to S50V
Peak Collecto'r Current: 16A
Rise ~ime: ~ 1.01's t @ I _ SA
Fall Time: ~ 1.0l'S f
eKey Parameters characterized at 100°C

ABSOLUTE MAXIMUM RATINGS·
2NB545

2NB544

Collector-Base Voltage, VeBo
Collector-Emitter Voltage, VCEQ (SUSI
Emitter-Base Voltage, VEBO .....
Collector Current, Ie. continuous
Base Current, lB. continuous
Emitter Current, IE, continuous.
Power Dissipation, 25°C Case
Derating Factor
Operating and Storage Temperature Range

..... 850V

650V.... .

... 400V
9V

... JOOV.. .
.. 9V.

....... SA
........ SA

SA ..
...... 8A.
.... 16A.

.. ..... 16A
................. 125W

125W...
....714W/oC ..

..................714W/oC
.. -65 to 200°C ....

• JEDEC registered values.

MECHANICAL SPECIFICATIONS
NOTE:
Leads may be soldered to within

2N6544 2N6545

of base provided temperaturetime exposure is less than 260~C
for 10 seconds.

TO-204AA (TO-3)

1/16"

F

~OOE
C

D

M

I~~....

G
1

~

H
I

A
B

I"

G-

J-!1?

1-

K

BASE
EMITIER

N

c
D
E
F
G
H

L

J
K

e
M

N

ins.
875 MAX
135 MAX
250 450
312 MIN
D38- 043 DIA
188 MAX RAD
1177-1197
655- 675
205- 225
420- 440
525 MAX RAD
151- 161 DIA

190·.210

mm.
2223 MAX
343 MAX
635 11 43
792 MIN
097-1 D9 DIA
478 MAX RAD
2990-3040
1664-1715
521-572
1067-1118
1334 MAX RAD
384-409 DIA
4.83·5.33

4-82

~UNITRODE

I

2N6544 2N6545
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)"
Symbol

Test

2N6544
MAX.
MIN.
12
60

2N6545
MAX.
MIN.
12
60

Test Conditions

Units

Ic = 2.5A, VCE = 3V

D.C. Current Gain (Note 1)

hFE

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCE("t)

-

1.5

-

1.5

V

Ic = 5.0A, la = 1.0A

Collector Saturation Voltage,
Tc = 100·C (Note 1)

VCE(,atl

-

2.S

V

Ic = S.OA, la = 1.0A

VCE(,atl

-

2.S

Collector Saturation Voltage
(Note 1)

S.O

-

S.O

V

Ic = 8.0A, la = 2.0A

Base Saturation Voltage (Note 1)

VaE(,atl

-

1.6

-

1.6

V

Ic = S.OA, la = 1.0A

Base Saturation Voltage,
TC= 100·C (Note 1)

VaE(,atl

-

1.6

-

1.6

V

Ic = S.OA, la = LOA

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO ('u,)

300

-

400

-

V

Ic=O.lA

Collector-Emitter Sustaining
Voltage
Tc = 100°C (Note 2)

VCEX {sus}

350

-

4S0

-

V

L = 180I'H, Ic =4.SA
VaE=-SV
VCE clamped to rated VCEX (,u'l

Emitter-Base Cutoff Current

IEao

-

1

-

O.S

-

-

-

2.5

-

-

-

2.S

Collector Cutoff Current

ICEV

7

7

35

35

1

O.S

-

Ic = 5.0A, VCE = 3V

mA
mA

Collector Cutoff Current,
Tc =lDO°C

ICEV

Collector Cutoff Current,
Tc =lDO°C

-

3.0

ICER

-

-

Output Capacitance,
Common Base

Cabo

100

200

100

200

pF

Gain-Bandwidth Product

Fr

6

24

6

24

MHz

Energy Second Breakdown
(unclamped)

Es/b

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

3.0

mA

mA

VEa =9V
VCE = 6S0V, VaE = -1.SV
VCE = 8S0V, VaE = -1.5V
VCE = 6S0V, VaE = -1.SV
VCE = 850V, VaE = -l.SV
VCE = 650V, R = son
VCE = 8S0V, R = 50n
Vca::';: lOY, f = 1 MHz
VCE = lOY, Ic = 0.3A, f = 1 MHz

SOO

-

sao

-

I'J

Ic=S.OA
la=l.OA
L=401'H

td
tr
t,
tf

-

0.05
1.0
4.0
1.0

-

I'S

-

0.05
1.0
4.0
1.0

Ic= S.OA
Vcc=250V
lal = la2 = 1.0A
VaE(offl =SV

t,
tf

-

-

4.0
0.9

-

4.0
0.9

I'S

ReJc

-

1.4

-

1.4

°C/W

-

Inductive Switching Speeds
Tc = 100°C
Storage Ti me
Fall Time
Thermal Resistance,
Junction-to-Case

Ic=S.OA
la = LOA
VaE(Offl =SV
VCE clamp = rated VCEX (,u,)

Notes:
1. Pulse width = 250pS; duty cycle,,;l %.
2. Sustaining Voltage. Measured at a high current point where collector·emitter voltage is lowest. Current pulse length
Voltage clamped at maximum collector·emitter voltage .
• JEDEC registered values.

UN ITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (7101 326·6509 • TELEX 95·1064

4·83

55

50pS; duty cycle"; 1%.

PRINTED IN U.S A.

•

2N6544 2N6545

Forward Bias Safe Operating Area
20

Power Derating
100

III

~

...
'"

~

,



10

Ie
Amps

TJ
'C

t,

t,.

ps

ps

t fj
p.s

3.0

25
100

.90
1.40

.07
.12

.07
.15

5.0

25
100

.98
1.52

.10
.15

.11

8.0

25
100

1.10
1.70

.14
.20

.11

.20
.18

//

I-r5Q.c
'j

V/./

tfv ;;;:;:

~/VeE{SATI

0.2
15J,C

VeE _10V

Inductive Load
Switching Performance

lell, - 5

25'C

'~~

0.2
0.5
Ie - COLLECTOR CUI/RENT (A)

Saturation Voltages

55'C

~~

- - - VeE =3V

2

20
50
100
200
500
VeEXISUS! - COLLECTOR VOLTAGE (V)

~

--

r:-

I
st

I

~l00°C

200

~~

ci 10 ~r--

I

~5V

~

.1

-

<..i

u

..l

I

50

Z

I
I
I

U

.1

40
80
120
160
Te-CASE TEMPERATURE ('C)

100

z

I

'"

.1

'\

D.C. Current Gain

-- M-

...

DISSI~A'~

TION CURRENT LIMIT AND 'SI'o CURRENT LIMIT FROM

DASH LINES ON SOAR CURVES ARE EXTENSIONS OF
DISSIPATION LIMITS FOR TEMPERATURE DERATING

500

......

~~

200

Z

b..

~~

40

U

!~,

\

~

...

1'0.

0::

Reverse Biased Safe Operating Area

(!I

~"~l>

is'd'/.

...o.t

(Reoll

U
0:

PW Varied to Attain Ie

VClamp

INDUCTIVE TEST CIRCUIT

en

1

= 1.0A

L~OI'
R~o'l

=20V
10 = 500kHz
Vee

(Unclamped)

---r.
I
t
° . 4v.,,1:°0
Ii
lSI)

181

-4V O.Ol~F
Set +V,n to Obtain a Forced
hFE = 5 and Adjust PW to
Attain Specified Peak IeQ1 2N640B Q3 2NSB7S
Duty Cycle ~ 3%
Q2 2N6406 Q4 2NSBn
1 = 1kHz
Diodes 1N4933

~2

~

RESISTIVE SWITCHING

pwA

0-..rL.

z

AND INDUCTIVE SWITCHING

Drive Circuit
+4V

en

o

i=

[SUS,

Lead ('Cpk)

2

VClamp

Test Equipment
Tektronix Scope
475 or Equivalent

Turn-Off Time

Turn-On Time

10

1000

125V
Vee
le ll• 5
I"
I"
T J = 25'C

t- 1""- to-.

SOO

".....

'I'
I'

J
I,

f"

T'-

'0

oS

td

t,

k:::1--'

I'

"'
:;; 100

i=
0.5

50

r....
If

0.2

"

0.1

0.1

0.2
Ie -

=

1I

f'..
r-

20

V

0.5
1
COLLECTOR CURRENT (A)

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) B61-6540
TWX (710) 326-6S09 • TELEX 9S-1064

Vee
125V
le ll ,=5
VSE(off) :::::5V

T J =2S'C

10
0.1

10

4-85

0.2
Ie -

o.s

S

10

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

PO\A/ER TRANSISTORS

JAN, JANTX, & JANTVX 2N6546
JAN, JANTX, & JANTVX 2N6547

15A,850V, Fast Switching,
Silicon NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•
•

These high voltage glass passivated power
transistors combine fast switching, low
saturation voltage and rugged Es/b capability.
They are designed for use in off-line power
supplies, high voltage inverters, switching
regulators, ignition systems and deflection
circuits.

Collector-Emitter Voltage: up to 850V
Peak Collector Current: 30A
Rise Time: ~ 0.7pS} @ I = lOA
Fall Time: ~ 0.7 pS
c
Qualified to MIL-S-19500/525

ABSOLUTE MAXIMUM RATINGS
2N6546
2N6547
Collector-Emitter Sustaining Voltage, VCEX ........ _........................... 650V . _.. _... , _.......... 850V
Collector-Emitter Voltage, VCEO (SUS) ......................................... 300V ........ _.. _. _.... _.400V
Emitter-Base Voltage, VEBO ..... __ . _..................... _. _........ _. _. _. _.... 8V ...... _............... 8V
Collector Current, Ic, continuous _... __ . _. _. _.... _.... _. _........... _. _. _. __ ... 15A .............. _...... 15A
Collector Current, Ic peak ... _...... _..... __ . _. _.. _........ _... _. _........ _. _.30A ................. _. _.30A
Base Current, IB, continuous. _. _...... _.. _... _............................... _lOA .. ___ .. _........ _.... lOA
Emitter Current, IE, continuous ............................................... 25A . __ . _. __ ........ _.... 25A
Power Dissipation, 25·C Case .............................. _..... _.. _. _... _. 175W ...... _............ 175W
Derating Factor ............. _... _......... _._ ..... _....................... IW;oC .. ___ ..... __ ._ .... IW/·C
Operating and Storage Temperature Range ..... ____ ..•.. _... _..... _.. _. _. _. _. _.. _. _.. -65 to +200·C ....... _

MECHANICAL SPECIFICATIONS
NOTE:
Leads may be soldered to within
1116" Of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

JAN. JANTX. & JANTXV 2N6546
JAN. JANTX. & JANTXV 2N6547
ins.
A

F

M

~OOE l ~7 i'·
-

j

J-

C

12183

0

B
C

~

IK

BASE

0

EM!TTER

E

N

F
G

H

mm.
2223 MAX
343 MAX
635-1143

312 MIN
038- 043 OIA

792 MIN
097-10901A

188 MAX RAO
1177 1197
655- 675
205- 225

478 MAX RAD
2990-3040
1664-1715

K

420- 440

521-572
10 67-1118

L
M

525 MAX RAO
151- 161 OIA

13 34 MAX RAO
384-409 DIA

N

190-.210

J

L

875 MAX
135 MAX
250- 450

4-86

TO-204AA (TO-3)

483·533

~UNITRDDE

JAN, JANTX, & JANTVX 2N6546
JAN, JANTX, & JANTVX 2N6547
ELECTRICAL SPECIFICATIONS (at 25'C unl... noted)·

Test

Symbol

D.C. Current Gain (Note 1)

hFE

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)

2N6546
MIN.
MAX.
12

60

hFE

6

-

hFE

15

-

5.0

VeE CsaU

-

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO Csusl

300

Emitter-Base Cutoff Current

lEBO

Collector Cutoff Current

ICEX

Collector Saturation Voltage (Note 1)

VCE CsaU

Collector Saturation Voltage (Note 1)

VCE CsaU

Base Saturation Vottage (Note 1)

--

Collector Cutoff Current,
Tc = 150'C

ICEX

-

Output Capacitance
Common Base

Cabo

-

Resistive Switching Speeds
Turn-on Time
Turn-off Time
Thermal Resistance,
Junction-to-Case

tON
tOFF
RBJC

-

2N6547
MIN.
MAX.

Units

Test Conditions

12

60

Ic = 5.0A. VCE = 2.0V

6

-

Ic = lOA, VCE = 2.0V

15

-

Ic - lA, Vee = 2V

1.5

V

Ic = lOA, Ie = 2.0A

5.0

V

Ic = 15A, Ie = 3.0A

1.6

-

1.6

V

Ic - lOA, Ie = 2.0A

-

400

-

V

1

-

1

mA

VEe = 8V

-

-1

mA

VCE = 650V, VeE = -1.5V
VCE = 850V, VeE = -1.5V

-

30

mA

VCE = 650V, VeE = -1.5V
VCE = 850V, VeE = -1.5V

-

500

pF

Vce =lOV. f = 1MHz

1.0
4.7

pS

Ic = lOA
Vcc = 250V
IB1 = IB2 = 2.0A

1.0

'C/W

1.5

1

-

30
500
1.0
4.7
1.0

-

-

Ic = O.lA. Ie = 0

Notes:
1. Pulse width = 25011S; duty cycle $1 %.
2. Sustaining Voltage. Measured at a high current point where collector-emitter voltage is lowest. Current pulse length'" 5011S; duty cycle $ 1%.
Voltage clamped at maximum collector-emitter voltage.
• JEDEC registered values.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-87

PRINTED IN U.S.A.

•

JAN, JANTX, & JANTVX 2N6546
JAN, JANTX, & JANTVX 2N6547

Forward Bias Safe Operating Area

Power Derating
100

~

~ t-....

"

0:

...U

0

.
."
"-

,

I"

80

...... ~{/~

~

60

z
;::

'''~()

'1',,>

~J

'"

...'"Z
'"

0:
0:
:l
U

,

N~

0:

0

'"

40

AT OESIREP OPERATING VOLTAGE, DERATE

20

~<"0

OISSI~"'.'\

lION CURRENT LIMIT AND I, b CUAAENT LIMn FADM
U'C SOAR CURVE

DASH LINES ON SOAR CURVES ARE £XTENSIONS OF

~

DISSIPATION LlMITj FOR TrMPEAjTURE rERATING
PURPOSES

o

o

.......

I

40
80
120
160
TC - CASE TEMPERATURE ('C)

"

200

VeE-COLLECTOR VOLTAGE (V)

DC Current Gain

Saturation Voltages
500

5

II II

IL

lell, = 5
2

~

~

\oJ

"~
0

>

I

55"~

200

[1

.r; ~

i-- VIE ,...,

z

« 100

~-

"

\oJ

0::
0::

lOO"C

:>

0.2
VeE(..t}

kX



= 5V

Z

25"

0.5

z

~0::

VeE

I-

1
2
5
10
0.5
'e - COLLECTOR CURRENT (A)

20

Typical
Inductive Load
Switching Performance

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

t,

TJ
"C

,,5

nS

nS

3

25
100

.8
1.10

.14
.18

.025
.030

5

25
100

.90
1.20

.14
.16

.025
.030

10

25
100

1.20
1.50

.05
.12

.050
.10

Ie
Amps

4-88

t"

tfi

PRINTED 'N U.S.A.

JAN, JANTX, & JANTVX 2N6546
JAN, JANTX, & JANTVX 2N6547

Resistive Turn-Off Time

Resistive Turn-On Time
10

1000

100'C

500

'"

I

loo'C

/

~ ~
,,~

Ui

.s
LIJ

~'"

"

200

t,

100

;::

B,_S

""'
.:;
t,

---~

;::

1
10

Ie -

I"

.S

"'"

~

"" """

./

loo'C

......

tf

I,;'

-?

-;;~
[-

.1
.2

20

•

"

1.0

.2

.S

.2

I"

LIJ

1121

'11-

10

250V

~,:::S_

:;

Vee =250V
20

I

vee

2.0

2S'C
loo'C

50

r---. .-

J:C r-.....

2S'C-

.... "

.~ -

U

'"

::;;

S.O

.S

COLLECTOR CURRENT CA)

2

Ie -

S

10

20

COLLECTOR CURRENT CA)

TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEOISUSJ

Drive Circuit

f/l

Z

o
;::
is

+IOV

5

II.

pw-l"b-4V

200

8

ISP.

+4V

_1

0..rL

z

!:

RESISTIVE SWITCHING

V eEX ISUS} AND INDUCTIVE SWITCHING

O.O.F

JL
o
•

t-;_~1

Set +V.o to Obtain a Forced
~~-.,.,,.,,-I1Q4.r,.z
hFE = S and Adjust PW to
yl ...............,.,...:..:i..--5V
Attain Specified Peak
QI 2N6408 Q3 2N5875
Duty Cyele .; 3%
Q2
2N6406 Q4 2N5877
f
1kHZ
Diodes IN4933

4V1i

Leo., = 80mH
Reod =0.70
VcialllP

Vee

= lOY

(Unclamped)

=

leOl1
Reoll

== 180p.H
== a.OS!!

VCI~mp

== Rated Vux

Value

Vee = 20V
fo = 500kHz
OUTPUT WAVEFORMS
t f Clamped
Unclamped = t~

/t,

'--f'<-:-_;'>-'-->- t

PW Varied to Attain Ie

leod
Reod

= 40.uH

Vee

= lOY

== 0.20

------.0

= IDA

2

t, Adjusted to

tf

~

1001'S

SOns

Duty Cycle" 2%
Vee =250V
R,=25P.
01 = IN5820 or Equiv.
R.=61l
RESISTIVE TEST CIRCUIT

Obtain Ie

= Leo"

t

"'='

2

(ICPkl

Vee

1

t

VeE

- -llV

Ie

tf~5ns

V cl • mp (Unclamped)

INDUCTIVE TEST CIRCUIT

__ I

O~

PW"

'c'

PW Varied to Attain
Ie = lOOmA

=+13V

I

IBA=2.0A~
38.SV
100

Leod (ICPk)
VClamp

Test Equipment
Tektronix Scope
475 or Equivalent

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02171 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-89

PRINTED IN U.S.A.

POWER TRANSISTORS

2N6671
2N6672
2N6673

8A, 400V, NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•

These high voltage, multiple layer
epitaxial, glass passivated power
transistors combine fast switching, low
saturation voltage and rugged secondbreakdown capability. They are designed
for use in off-line power supplies, high
voltage inverters and switching regulators.

Collector Emitter Voltage: up to 650V
Peak Collector Current: lOA
Storage Time ~ 2.5ps } at Ie = 5A
Fall Time ~ O.4ps

ABSOLUTE MAXIMUM RATINGS"
2N6671

2N6672

2N6673

Collector Emitter Voltage, VeEv ................... 450V ........ 550V ......... 650V
Collector Emitter Voltage, VeEx ................... 350V ........ 400V ......... 450V
Collector Emitter Voltage, VeEo ISUSJ ............... 300V ........ 350V ......... 400V
Emitter Base Voltage, VE• O .. • .. .. .. .. • .. .. • .. .. • .. • .. .. .. .. .. . . . 8V ............... .
Collector Current. Ie continuous.. .. .. ..... .. .. ...... .. .......... 8A ............... .
Collector Current, leMIP.akl ....................................... l2A ............... .
Base Current, I. continuous .................................... 4A ............... .
Power Dissipation, up to 25°C ................................. l50W ............. ..
above 25°C, derate linearly ................ 0.86W;oC ........... ..
Operating and Storage Temperature Range ................ -65°C to +200°C
• JEDEC registered values.

MECHANICAL SPECIFICATIONS
2N6671 2N6672 2N6673

NOTE:
Leads may be soldered to Within
'It." of base provided temperature·
time exposure is less than 260'C
for 10 seconds.

F-W- M

~SbE I 7

I~~

C 0

4/82

i"·-

J-

~
K

BASE
EMITTER

A
B

C
D
E
F
G
H

L

J
K
L
M

INCHES
875 MAX.
135 MAX.
250 .043 DIA
312 MIN
038-.043 DIA
.188 MAX. RAO.
1177 1.197
655- 675
205- 225
420-.440
525 MAX RAO
.151- 161 DIA.

4-90

TO-204AA (10·3)

MILLIMETERS
22.23 MAX.
3.43 MAX
635-11.43
792 MIN
097-1.09 DIA
4.78 MAX. RAD
2990-3040
16.64- 17 15
5.21-5.72
10 67-11.18
13 34 MAX. RAD.
384-409 DIA

~UNITRODE

2N6671 2N6672 2N6673

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
TEST

Collector Cutoff Current

Collector Cutoff Current
Te=125°C

SYMBOL

le.v

ICEV

Emitter Base Cutoff Current

leeo

Collector Emitter Sustaining Voltage
(Notes 1 & 2)

VCEOlsusl

2N6671

2N6672

2N6673

MIN. MAX. MIN. MAX. MIN. MAX.

UNITS

TEST CONDITIONS

-

0.1

-

-

-

-

mA

VeE = 450V, Va. = -1.5V

-

-

-

0.1

-

-

mA

VeE = 550V, Va. = -1.5V

-

-

-

mA

VeE = 650V, Va. = -1.5V

1

-

0.1

-

-

mA

VeE = 450V, VBE = -1.5V

-

-

1

-

-

mA

VeE = 550V, Va. = -1.5V

-

-

-

-

1

mA

VeE = 650V, Va. = -1.5V

-

2

-

2

-

2

mA

Va. = -SV, Ie = 0

300

-

350

-

400

-

V

Ie '= 0.2A, la =0

10

40

10

40

10

40

1.6

1.6

-

1.6

V

Ie = 5A, la = 1A

1

-

1

-

1

V

Ie = 5A, la = 1A

DC Current Gain (Note 1)

hF•

Base Saturation Voltage (Note 1)

VBElsatJ

Collector Saturation Voltage (Note 1)

VCElsatJ

-

Collector Saturation Voltage
Te = 125°C (Note 1)

VCElsatJ

-

2

-

2

-

2

V

Ie = 5A, la = 1A

Collector Saturation Voltage (Note 1)

VCElsati

-

2

-

2

-

2

V

Ie = SA, la = 4A

350

-

400

-

450

-

V

L = 170JlH, Raa = 50
Va. = -5V
Ie = 5A, la = 1A

200

-

250

-

300

-

V

L = 170JlH, Ree = 50
Ve. = -5V
Ie = SA, Ie = 3A

3

12

3

12

3

12

Collector Emitter Voltage (Note 2)

AC Current Gain

Ie = 5A, VeE = 3V

VCEX

Ihf.1

Ie = 0.2A
VeE = lOV
f =5MHz

Gain·Bandwidth Product

h

15

60

15

60

15

60

MHz

Output Capacitance Common Base

CObO

50

300

50

300

50

300

pF

Vee = 10V, f = O.lMHz

Delay Time

td

-

0.1

-

0.1

-

0.1

Rise Time

t,

-

0.5

-

0.5

-

JlS

0.5

Ie = 5A, leO' 1A
Vee = 125V
tp " 20Jls

Storage Ti me

t,

2.5

-

2.5

JlS

tf

0.4

-

2.5

Fall Time

-

0.4

-

0.4

Ie = 5A, -I. = 1A
Vee = 125V
tp= 20Jls

Crossover Ti me

te

-

0.4

-

0.4

-

0.4

JlS

Ie = 5A, 1. 2 = 1A
Vee = 125V
Lc = 170JlH, Re = 250
Collector clamped to VeEx

Rise Time

t,

-

0.8

-

O.S

-

0.8

JlS

Ie = 5A, I. = 1A
Vee = 125V
t p = 20Jls

Storage Time

t,

4

-

4

-

4

tf

O.S

-

JlS

Fall Time

-

O.S

-

O.S

Ie = 5A, -I. = 1A
Vee = 125V
tp 0'. 20Jls

Crossover Ti me

te

-

O.S

-

O.S

-

0.8

JlS

Ie = 5A, le2 = 1A
Vee = 125V
L = 170JlH, Re = 250
Collector clamped to Ve• x

ReJe

-

1.17

-

1.17

-

1.17

°C/W

VeE = 10V, Ie = 0.2A

Switching Speeds

Switching Speeds
Te = 125°C

Thermal Resistance, Junction to Case

*JEDEC registered

values.
Notes: 1. Pulse duration = 300/15; duty factor :;; 2%
2 CAUTION: The sustaining voltage VCEOCsusl and VCEX must not be measured on a curve tracer.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
(710) 326-6509 • TELEX 95-1064

TW~

4-91

PRINTED IN U.S.A.

•

2N6671 2N6672 2N6673

Typical Collector·to·Emitter Saturation
Voltage as a Function of Collector Current

Typical Base·to·Emitter Saturation
Voltage as a Function of Collector Current
40

Ie = Ic/5

Ie = 1e/5

08

06

f------I-I----+---Ji:: ~ig:g

ffi

1--

t:c.
2"",

Tc =

25 C
Q

04

""'~~'"'

0:0
0>.

-40's..

I-

f..--::

Uz
~o

~~

02

8~
I=>

_ 125' C
~~R((1')-

~!;{

:::::::::::c~s( 1(l>Ip(R~

0(/)
>

01
08
06

04

04
8

4

10

8

1

Io-COLLECTOR CURRENT (A)

Typical Saturated·Switching· Time
Characteristics
CASE TEMPERATURE (T oJ = 25'C

Typical de beta Characteristics
200
0

COLLECTOR-TO-EMITTER
VOLTAGE (V,,) = 3V

IS1

Vee

~
~ 100
~

'"z-<

0:
lI-

80

60

~ 40

0:
0:

=>
'-'

'"~
0:

.--

.........

.....

L

;;;--

'-'

1

10

01

"'x"s.

~

~~

"

1t

'"I

=-1 92 = lA
= 125V

t p = 20/.1

0:

20

10

Io-COLLECTOR CURRENT (A)

CASE

..............
TEMPERAr
~
tE (T,)._
40·C

6 8 1

~
K

200

I---

6

~
810

........

-

--

~
---......
t,

t,

~

~

.-./

10 - COLLECTOR CURRENT (A)

I,-COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

f::::::

~.

4-92

PRINTED IN U.S.A.

2N6671 2N6672 2N6673

Typical Thermal·Response Characteristics
(Normalized)

Maximum Operating Areas

(Te

'"z
«
f-

=25°C)

10

u


I-~

1-",

'"'"

!::>'

20

·OJ 1.0

0"
I-;-~
"'0
0>

~§:
"'z
<0
ICli

_40· C

~

06

<,~\I>?~I'''I

>

~Q

6~

~:::::::~~\)\l.C
~e)<\

0.8

C/
~

0Z

~

"';:; 1.0

m~

/
.,/

",,,,

::;~

~~
0-'

0;:'
.C

~

~
~

.1
6

8 10

20

40

60100

10

15

Ie-COLLECTOR CURRENT (A)

Ie-COLLECTOR CURRENT (A)

Typical dc beta Characteristics
100
0

80

~ 60

'"

~

'"z<

40

COLLECTOR· TO-EMITTER VOLTAGE (Vco) =3V

C'-?O'~

~
"'<,:

'"

l-

25·C



"~
'"
It
<.>
"

-

a:

10

-40·C

r.....

1
4

6

"
8 10

20

40 60 80100

I,-COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4·96

PRINTED IN U.S.A.

2N6674 2N6675

-

w

./

'-'
z
«

~

/

~

It:

;;!

::;;

8J

I

>>- 01

/

is
Vi

z

<:i

/

>-

fa
N

/

V

100

«

Pulsed Operation';'

r-- I~ (Mai) ~ulsed
g

/'

>-

is

10

.. '\

(J

r--~For Single et--r--~

~

r-

%.

Nonrepetltrve
fUlsel

0

Case Temperature (T c) = 25°C-

J,

L7~:~;,~ ~,~~\~cir~:;:ted

(J

In

::;;

(2N6674)_

V"o(Max) = 400V (2N6675)
0.01

01

0001

0.01

01

1

10

t,-PULSE WIDTH (s)

:<:r

'=

~~

Temperature)

I- V"o(Max) = 300V

It:

o
z

"q,

\

J\~

I IJ

+

%="'"

t::~~
DISSipation Limited _

It:

/

\~

Ie (Max) Continuous,",
DC OperatlOj

'"=>
'">-0

/

:J

•

Maximum Operating Areas
For All Types (Tc = 25°C)

Typical Thermal·Response Characteristics
(Normalized)

~"
'i.

10
100
V,,-COLLECTOR·TO·EMITTER VOLTAGE (V)

1000

Maximum Operating Conditions for
Switching Between Saturation
and Cutoff

Dissipation and ISIB Derating Curves
125

>-

100

W

It:
It:

'"=>
It:

!\

it
It:
~

0

(J

~

~'\

8J

25

50

75

100

125

150 175

i¥'2N6675

0

2N6674'-..,.

(J'

J,

'\

0-

25

100°C

0

>-

'''1''

50

tc~

It:

'-'

a

10

>zw

I'\.

=>
'-' 75
0

w

>zw

g

1\

z

200

a

225 250

To-CASE TEMPERATURE (OC)

I

I

100

200

I

I

I

300 350 400 450 500

VCEXIClAMPEOj-CLAMPED

COLLECTOR· TO· EMITTER VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

4·97

PRINTED IN U.S.A.

2N6676
2N6677
2N6678

POWER TRANSISTORS
15A, 400V NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•

These high voltage, multiple layer
epitaxial, glass passivated power
transistors combine fast switching, low
saturation voltage and rugged secondbreakdown capability. They are designed
for use in off-line power supplies, high
voltage inverters and switching regulators.

Collector Emitter Voltage: up to 650V
Peak Collector Current: 20A
Storage Time :5 2.5J1S} at Ie = 15A
Fall Time :5 O.5J1s

ABSOLUTE MAXIMUM RATINGS·
2N6676

2N6677

2N6678

Collector Emitter Voltage, VeEV .................. 450V ....... " 550V .......... 650V
Collector Emitter Voltage, VeEX .................. 350V ......... 400V ......... .450V
Collector Ernitter Voltage, VeEO,""" ............... 300V ......... 350V ......... .400V
Emitter Base Voltage, VEBO ....................................... 8V ................ .
Collector Current, Ie continuous. " .............................. 15A ............... .
Collector Current, leMIP.akl ....................................... 20A ............... .
Base Current, IB continuous ..................................... 5A ................ .
Power Dissipation, up to 25°C .... , .................. " " .. , ... 175W ............... .
above 25°C, derate linearly .................. 1W;oC .............. .
Operating and Storage Temperature Range ....... , '" " " . -65°C to +200°C ......... .
• JEDEC registered values.

MECHANICAL SPECIFICATIONS
NOTE:
Leads may be soldered to within
'I.... of base provided temperature·
time exposure 's less than 260°C
for 10 seconds.

2N6676 2N6677 2N6678

F

~iJE
C D

4/82

I
G

l

A
B

M
-

H

":\/'

........ I

J

G-

J- 't"

K

C
BASE
EMITTER

D
E
F
G
H

J

L

K
L
M

INCHES
875 MAX
135 MAX
250- 043 DIA
312 MIN
.038-.043 DIA
188 MAX RAD
1177 1197
655- 675
205- 225
420 440
525 MAX RAD
151- 161 DIA

4-98

TO·204AA (TO·3)

MILLIMETERS
2223 MAX
343 MAX
635-11.43
792 MIN.
097-109 DIA
4.78 MAX RAD.
2990-3040
1664- 17 15
521-5.72
10.67-1118
1334 MAX RAD
384-409 DIA

~UNITRODE

2N6676 2N6677 2N6678
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)·
TEST

Collector Cutoff Current

Collector Cutoff Current
Te =100°C

SYMBOL

leEv

leEv

2N6676

2N6677

2N6678

MIN. MAX. MIN. MAX. MIN. MAX.

UNITS

TEST CONDITIONS

-

0.1

-

-

mA

VeE = 450V, Vee = -1.5V

-

-

0.1

-

-

-

-

mA

VeE = 550V, Vae = -1.5V

-

-

-

-

-

0.1

mA

VeE = 650V, Vee = -1.5V

-

1

-

-

-

mA

VeE = 450V, VOE. = -1.5V

-

-

-

1

-

-

mA

VeE = 550V, Vse = -1.5V

-

-

-

mA

VeE = 650V, V.E = -1.5V

2

-

2

-

1
2

mA

V•• = -8V, Ie = 0

300

-

350

-

400

-

V

Emitter Base Cutoff Current

I.BO

Collector Emitter Sustaining Voltage
(Notes 1 & 2)

VCEOlsuSI

DC Current Gain (Note 1)

h F•

8

-

8

-

8

-

Base Saturation Voltage (Note 1)

VBElsati

-

l.5

l.5

-

1.5

V

Ie = 15A, I. = 3A

Collector Saturation Voltage (Note 1)

VCElsati

-

1

-

1

-

1

V

Ie = 15A, I. = 3A

Collector Saturation Voltage
Te=lOO°C

VeECsatl

-

2

-

2

-

2

V

Ie = 15A, I. = 3A

Collector Saturation Voltage (Note 1)

VeElsali

-

l.5

-

1.5

-

1.5

V

Ie = 15A, I. = 3A

Collector Emitter Voltage (Note 2)

Ve••

350

400

-

450

-

V

L = 50pH, R•• = 20
V•• = -6V, VeE is clamped
Ie = 15A, I. = 3A

AC Current Gain

Ih,.1

3

3

10

3

10

Gain-Banqwidth Product

h

Output Capacitance Common Base

Cobo

10

Ie = 0.2A, I. =0
Ie = 15A, VeE = 3V

Ie = lA
VeE = lOY
f =5MHz

15

50

15

50

15

50

MHz

150

500

150

500

150

500

pF

Vea = lOV, f = O.IMHz

ps

Ie = 15A, I. = 3A
Vee = 200V, -V•• = -6V
t p = 20ps

ps

Ie = 15A, -I .. = 3A
Vet; = 200V, -V.E = -6V
t p = 20ps

VeE = 10V, Ie = lA

Switching Speeds
Delay Time

td

-

0.1

-

0.1

-

0.1

Rise Time

t,

-

0.6

-

0.6

-

0.6

Storage Time

t.

-

2.5

-

2.5

-

2.5

Fall Time

t,

-

0.5

-

0.5

-

0.5

Crossover Ti me

te

-

0.5

-

0.5

-

0.5

tIS

Ie = 15A, I. = 3A
Vee = 200V, V., = -6V
L = 50pH, Re :$ 13.500
Collector clamped to VeE.

Rise Time

t,

-

1

-

1

-

1

ps

Ie = 15A, I. = 3A
Vet; = 200V, V., = -6V
L = 50pH, Re:$ 13.50
Collector Clamped to VeE.

Storage Time

t.

-

4

-

4

4

t,

-

1

-

ps

Fall Time

1

-

Ie = 15A, -1.2 = 3A
Vet; = 200V, V.E =-6V
L = 50pH, Re :$ 13.50
Collector clamped to Vee.

Crossover Time

te

-

0.8

-

0.8

-

0.8

ps

Ie = 15A, I. = 3A
Vee = 200V, V.. = -6V
L = 50pH, Re:$ 13.50
Collector clamped to VeE.

R8Je

-

1

-

1

-

1

°C/W

Switching Speeds
Te = 100°C

Thermal Resistance, Junction to Case

1

• JEDEC registered values.
Notes: 1. Pulse duration = 3OO/1s; duty factor ,; 2%
2. CAUTION: The sustaining voltage VceolSuSI and VCEX must not be measured on a curve tracer.

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-99

PRINTED IN U.S A

II

2N6676 2N6677 2N6678

Typical Collector lo-Emitter Saturation
Voltage Cnaracteristics

Typical Elase-to-Emitter Saturation
Voltage as a Function of Collector Current,
40

la = Ic/5

o:~

"'>
I-~
20

/

1-",

,v/

~~
0-'

"",,'>.'\':J

1-0

..:.>

U>z
~g

I;::

1.0

";;J

i~
>

08
06

<,i//

~
~~
::---

~

~

~ --:~~;; <:§l0C
-

~"-,,,,,

)<\

~c ~ts'l'-~\.~G

k~~~?~I'-~1
C~5'1

c,'" :::::.-::

~

;:=--

~

~",c

0,4
6

20

8 10

40

60 100

10

15

k-COLLECTOR CURRENT (A)

k-COLLECTOR CURRENT (A)

Typical dc beta Characteristics
100
80

0

COLLECTOR, TO-EMITTER VOLTAGE (V.,) =3V

~ 60

0:

~

U>

z

0-1.\'",

40

'"

~
1,I.o~

0:
lI-

150:
0:

25oc
20

::J
<.)

~ r(r{.J~
. . . . r--.~
v~

~

0:

[2

10

/00'b

~~

0
0:

-40'C

......

<.)

0

I

1
6

"

8 10

20

40

60 80 100

I,-COLLECTOR CURRENT (A)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-100

PRINTED IN U.S A

2N6676 2N6677 2N6678

w
U
Z

~

f{i

V

'"
«

~

:;;

ffi

:I:

>>- 01

I

15

in

z
«

/

'">-

§

/'

/

./

V

100

..........

Pulsed Operatlon*

t--I~ (Max) Pulsed

g
>-

15

DC

/

~q,

1 ~="'"

operatlo~ z=Ni~

DISSipation limited

-t-

0'

err.:-V

t--'For Single
r-Nonrepebtlve

J~~r--I

Pulse

casl Tem~er~t~re

j

0

u

'1:,

(Tc) = 250C:. <:P

001
0001

tft "

aI

001

10

I

t,-PULSE WIDTH (5)

Dissipation and

ISlb

%.

V"c(Max) = 400V (2N6678)

aI

.

1\;;;

r-~~:~~~~~~: 1~g~ ~~~~m~

z

E

~

lmearly with Increase
In Temperature)

~
o

:<0-

\I"

(Curves must be Derated

J,

T

,~

Ie (Max) Contlnuou~

10

'"'"=>
u
'"u>-0

/

:::;

«

•

Maximum Operating Areas
(Te =2S0C)

Typical Thermal·Response Characteristics
(Normalized)

10

100

1000

V,,-COLLECTOR-TO-EMITTER VOLTAGE (V)

Maximum Operating Conditions
For Switching Between Saturation
and Cutoff

Derating Curves

125
15

>-

100

1'\

15

'"'"=>
u

8

75

g
>-

l\.

1\

!;(

'"0
~

>-

z

15

50

'"'"=>
u
8'"
I'\q~~

~

25

a

25

50

75

100 125

\

150 175 200

I"-

I"--I

225 250

I

I

'"

100

200

300 400 350 450

VCEXICLAMPEDI-CLAMPED COLLECTORTO-EMITTER VOLTAGE (V)

T,-CASE TEMPERATURE (OC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2N6678,-

J,

'0

0.

2N6677 '-

u

0

~"',

w

2N6676 ......

TC" 100°C

~

4-101

PRINTED IN USA.

POWER TRANSISTORS

JAN, JANTX, & JANTXV 2N6676
JAN, JANTX, & JANTXV 2N6678

15A, 400V NPN Mesa

FEATURES

DESCRIPTION

• Collector Emitter Voltage: up to 650V
• Peak Collector Current: 20A
• Stora~e Time ~ 2.5/lS} at Ie = 15A
• Fall Time ~ 0.5/ls

These high voltage, multiple layer
epitaxial, glass passivated power
transistors combine fast switching, low
saturation voltage and rugged secondbreakdown capability. They are designed
for use in of(line power supplies, high
voltage inverters and switching regulators.

ABSOLUTE MAXIMUM RATINGS·

2N6676

2N6678

Collector Base Voltage, VCBO .................... 450V ......................... 650V
Collector Emitter Voltage, VCEX ................. 450V ......................... 650V
Collector Emitter Voltage, VCEOlsUSI .............. 300V ......................... 400V
Emitter Base Voltage, VEBO ...................................... 8V................ .
Collector Current, Ic continuous ................................ 15A ............... .
Collector Current, ICMlpeakl ..................................... 20A ............... .
Base Current, IB continuous ..................................... 5A ............... .
Power Dissipation, up to 25°C ................................. 175W .............. .
Power Dissipation, above 25°C, derate lineraly .................. 1W;oC ............. .
Operating and Storage Temperature Range ................ -65°C to +200°C ........ .

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N6676
JAN, JANTX, & JANTXV 2N6678

NOTE:
Leads may be soldered to within

'A.' of base provided temperature·
time exposure is less than 260'C
for 10 seconds.

F

~~E
C D

12/83

A
B

M

I~'~

j 7 1"·J-

~

Ii(

C
BASE
EMITTER

D
E
F
G
H
J

L

K

L
M

INCHES
.875 MAX.
135 MAX
250- 043 DIA.
.312 MIN.
.038- 043 DIA
188 MAX RAD.
1.177-1.197
655- 675
.205 225
420-.440
525 MAX RAD
151-161 DIA.

4-102

TO-204AA (TO·3)

MILLIMETERS
22.23 MAX.
343 MAX.
6.35-11.43
7.92 MIN
0.97-109 DIA
4.78 MAX. RAD
29.90 30.40
1664-.17.15
521-5.72
10.67-11.18
13.34 MAX. RAD.
3.84 409 DIA

~UNITRODE

JAN, JANTX, & JANTXV 2N6676
JAN, JANTX, & JANTXV 2N6678
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)·
TEST
Collector Cutoff Current

SYMBOL

ICEX

Collector Cutoff Current
Tc = 125°C

ICEX

Emitter Base Cutoff Current

lEBO

Collector Emitter Sustaining Voltage
(Notes 1 & 2)

VCEOlsus,

2N6676

2N6678

UNITS

TEST CONDITIONS

MIN.

MAX.

MIN.

-

0.1

-

-

mA

VCE = 450V, VBE = -1.5V

-

-

-

0.1

mA

VCE = 650V, VBE = -1.5V

1

-

mA

VCE = 450V, VBE = -1.5V

-

-

-

1

mA

VCE = 650V, VBE = -1.5V

2

-

2

mA

VBE = -8V, Ic = OV

300

-

400

-

V

Ic = 0.2A, IB = OV

MAX.

DC Current Gain (Note 1)

hFE

15

40

15

40

DC Current Gain (Note 1)

hFE

8

20

8

20

Base Saturation Voltage (Note 1)

VBElsati

1.5

1.5

V

Ic = 15A, IB = 3A

1

-

1

V

Ic = 15A, IB = 3A

2

-

2

V

Ic = 15A, IB = 3A

V

Ic = 15A, IB = 3A

Ic = LOA, VCE = 3V
Ic = 15A, VCE = 3V

Collector Saturation Voltage (Note 1)

VCElsaD

Collector Saturation Voltage
Tc = 125°C

VCElsati

-

Collector Saturation Voltage (Note 1)

VCElsaD

-

1.5

-

1.5

AC Current Gain

Ihl~

3

10

3

10

Gain·Bandwidth Product

f,-

15

50

15

50

MHz

Output Capacitance Common Base

CObo

150

500

150

500

pF

VCB = 10V, f = O.lMHz

Switching Speeds
Delay Time

td

0.1

-

0.1

0.6

-

0.6

I1S

Ic = 15A, IB = 3A
Vcc = 200V, -VBE = -6V
tp = 20/15

2.5

I1S

Ic = 15A, -IB2 = 3A
Vcc = 200V, -VBE = -6V
tp = 2Ol1s
Ic = 15A, IB = 3A
Vee = 200V, VBE = -6V
L = 5011H, Rc ~ 13.500
Collector clamped to VCEX

Ic = 1A
VCE = 10V
f = 5MHz

Rise Time

tr

-

Storage Time

ts

-

2.5

Fall Time

tl

-

0.5

-

Crossover Time

te

-

0.5

-

0.5

I1S

Switching Speeds, TA = 125°C
Delay Time

0.5

VCE = 10V, Ic = 1A

Id

-

0.1

I1S

t,.

-

1

-

0.1

Rise Time

1

I1S

Ic = 15A, IB = 3A
Vee = 200V, VBE = -6V
L = 50I1H, Rc ~ 13.50
Collector clamped to VCEX

Storage Ti me

ts

-

4

-

4

Fall Time

tl

-

1

-

I1S

1

Ic = 15A, -IB2 = 3A
vee = 200V, VBE = -6V
L = 50I1H, Rc ~ 13.50
Collector clamped to VCEX

Crossover Time

te

-

0.8

-

0.8

I1S

Ic = 15A, IB = 3A
Vee = 200V, VBE = -6V
L = 50I1H, Rc ~ 13.50
Collector clamped to VCEX

R8JC

-

1

-

1

°C/W

Thermal Resistance, Junction to Case

• JEDEC registered values.
Notes: 1. Pulse duration =300/JS; duty factor::; 2%
2. CAUTION: The sustaining voltage VCEOlsus' and VCEX must not be measured on a curve tracer.

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-103

PRINTED IN U.S A.

II

JAN, JANTX, & JANTXV 2N6676
JAN, JANTX, & JANTXV 2N6678

Typical

Typical Base-to-Emitter Saturation
Voltage as a Function of Collector Current
40

Collector-to-Emitte~ Saturation
Voltage Characteristics

18 = le/5

!
ffiS'

1-'":
I-w

/
.v/

20

~~
o~

1-0

~~
«0
Ole:

I~
"=>

i~
>

1.0
08
06

;

,0-

~

,"
fv'<-~

~f-:::::::::~~,oo'C
~~.(ui>.~(lCl
<~~",~~I'-~I
C~5'1

,$

~~

--

v~::::...-::

--=-'

po-

0.4

I

6810

20

40

60100

I

fv"

~",c

~

10

15

I,-COLLECTOR CURRENT (A)

ie-COLLECTOR CURRENT (A)

Typical dc beta Characteristics
100
0

80

~ 60

5'"
~

z
«

40

COLLECTOR·TO·EMITTER VOLTAGE (V,,) =3V

('-1.l'~
~

4,1.0<,;

'"

l-

I-

~

'"'"=>

25'C

~ ~r1"oil

' \ . 0.)

20

....... , \."000

u

- '~

Cl

'"~

e'"u

10

-4Q'C

......

r........

Cl

1
4

6

8 10

20

40

60 80 100

ie-COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-104

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N6676
JAN, JANTX, & JANTXV 2N6678

-

w
U

Z

~

/'

ill
~

"'"

ffi

Co
Co

~

01

/

/'

(T, = 25°C)

100

/

~
Co

~

z

riCo

U

~
0

'"~

Smgle
Nonrepetltlve
Pulse

I
Tem~r~t~re

J,

t-V".(Max)
V".(Max)

o

z

001

=

001

01

10

10

t,-PULSE WIDTH (5)

"

=300V (2N6676)=400V (2N6678)

01

0001

\

1\

casl
(T,) 25'C
(Curves must be Derated
Lmearly with Increase
In Temperature)

u

II

::

~

~*For

r--

'"0Co

/

§

~

\"' ~
I ~=~

Ie (Max) Continuous,,"

DtSSIP~~o~Jfr~~:~d :t: ~ ~~

go
:0

/

iii

10

Operatlon"'-t-

Pulsed

f - I; (Ma~) ~ul~e~

/'

'"
I

,/

•

Maximum Operating Areas

Typical Thermal-Response Characteristics
(Normalized)

~

~

\

100

1000

V,,-COLLECTOR·TO·EMITTER VOLTAGE (V)

Safe Operating Area For Switchinr
Between Saturation And Cutoff
(Clamped Inductive Load)

Dissipation and I." Derating Curves
125

TA = 25'C
100

1\
"-

Co

~

'"'"
u

:0

8
~

75

~

0
Co

~

16

~
.2

~

50

50

75

100

125

~

::J

150 175

200

0

u

225 250

100

T,-CASE TEMPERATURE ('C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2N6678- !--

U

'\

25

2N6676

'"0Co

~'\

ffi

25

'"

10

:0

'4~,

0-

a

12

~

u

14

Co

200

300

400

500

COLLECTOR TO EMITTER VOLTAGE VeE (V)

4-105

PRINTED IN U.S.A.

POWER MOSFET TRANSISTORS
100 Volt, 0.18 Ohm
N-Channel

2N6755
J, JTX, JTXV 2N6756

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROs-_-......_-...-J

Il ...

UNITROOE CORPORATION" 5 FORBES ROAO
LEXINGTON, MA 02173 " TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

4-107

PRINTED IN USA

•

2N6755
JAN, JANTX, & JANTXV 2N6756

Fig. 4 - Typical Transfer Characteristics

Fig. 3 - Typical Output Characteristics
20

~jlSPU1ETEJT _

10Vyav

-

/

-

r

VGS''!= =

r

SI'-

I

lV_

16

20
'--

~hS

PU!LSE

,

II

TEll

Yas" 15V

16

J

:1

.~-

!IJ
'(II

-

hV

TJ'"+125 0C

-i.'J.2S.C ~ f/J
TJ 'jss,c
~ r.;
,

r-

10
20
30
40
Vas. DRAIN TO SOURCE YOl TAGE (VOL IS)

50

Fig. 6- Typical Saturation Characteristics
(2N6756)

(2N6755)
10

mJ

9~~ ~

•

8V ..........

W/

_ISo,..SP!LSET!ST

~

e

08

1.2

16

~ V"

-

~ ~6V
~V

--

"

~

~V

~

iGS"i

o.

-9i"
8Y, r:.......... ~ ~
IV . . . . . ~ ~ ~

2

~r-

lOy"

-

./

--

V

J ~ /'

2

10

ffi V

~ VI ,/
~ ~ ~V
.4~ /
~ '/ ~J

I~ /"

10

VGS. GATE·TO-SOURCE VOL lAGE (VOL lSI

Fig. 5- Typical Saturation Characteristics
8hsPULSETEST

rI

_sy- ~

V1GS"r= F
20

04
0.8
12
16
VDS. DRAIN·TO-SOURCE VOLTAGE (VOL lS)

20

Vas. DRAIN TO SOURGE VOLTAGE (VOLTS)

Fig. 8 - Maximum Safe Operating Area

Fig. 7 - Typical Transconductance Vs. Drain Current
50
10

lO"L I--f-

2N6756
20

.....

..-

V

-

~

U
f.

ill
~

TJ "·550C

10

"!>

~'25'~

i

I

TJ= 12SDe

i.m-.r ~'"

rH'

," ,

~~

5.0

~

_6

I\..

V

1 ms

I-- l -

10mj-

~-

I\..

20

I--

Vas" lSV

TJ " ISOoC MAX.

t\

SING LE PU LSE

1O(""'i,m,

f-- l-

I\..

z

,/

lOOps.

f- 2N6155

-

1.0

DC
10

,.

20

IS

4.05.0

10. DRAIN CURRENT (AMPERES)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861,6540
TWX (710) 326·6509 • TELEX 95·1064

2N6755

0.5
10

20

50

2N6756

100

f-- -

200

Vas. DRAIN·TD·SDURCE VOLTAGE (VOLTS)

4-108

PRINTED IN U.S.A

2N6755
JAN, JANTX, & JANTXV 2N6756

Fig.9-Normalized Typical On-Resistance Vs. Temperature

Fig. 10 - Typical Capacitance Vs. Draln-to-Source Voltage
1000

~GS· J

1

f: 1 MHz

•

1600

V
/
/

:

~

...... V

0

6

o.1

\

vGS::: lOV

'r

9A

40

o\

\

1

80
120
40
TJ,JUNCTION TEMPERATURE fDC)

-40

~ soo~
u

- - r--

:,.......

V

1200

:!

C,,,

"-

160

L

I--

c~

10

30

20

so

40

VOS, ORAIN·TO·SOURCE VOLTAGE (VOLTS)

Fig. 12 - Typical Body-Drain Diode Forward Voltage

Fig. 11 - Power V•. Temperature Derating Curve
80

~
70

~

z

§

\.

60

S

'/'SM.2N6756

l'......
\.

SO

'\

0

E
ill

/ / 's, 2N6756

40

'\

Ci
~

3!

I

I

30

f

.P

20

I

I\.

10

-T .,50,n
J

60
80
100
Te. CASE TEMPERATURE (DC)

40

120

I
TJ"'250C

I

\.
1.0

\.
20

I

1I

o

VSO,SOURCE·TO-ORAIN VOLTAGE ,VOLTS)

140

Fig. 14 - Switching Time Waveforms

Fig. 13 - Switching Time Test Circuit

PULSEt~IDTH~

VGS'oo)

--+_----...,

INPUT, V,
_

v,

1 J:
50%

~O%

90%

10%

VGS (otf)

.. , . - - - . TO SCOPE

tdlon)

50%
10%

INPUT PULSE
RISE TIME

t']

INPUT PULSE
FALL TIME

!(flotf)

VDS(Off)-{dO%
OUTPUT, V,

90%

VOS , o o ) F
I::"'--+"::'::JI'

ton ---I

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-109

1.-

toff

PRINTED IN USA

POWER MOSFET TRANSISTORS
200 Volt, 0.4 Ohm

2N6757
J, JTX, JTXV 2N6758

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RoB•on) and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Qualified to MIL-S-19500/542A

The Unittode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

2N6757

150V

0.60

8A

2N6758

200V

0.40

9A

MECHANICAL SPECIFICATIONS

2122(0815)

1013:t~MAX
OIA~'Htm
T

TO-2D4AA (TO-3 )

SEATING

PLANE

6~1~~IIO'A-ll--

TWO PLACES

2N6757
JAN. JANTX, & JANTXV 2N6758

10 16(0401 MIN
TWO PLACES

2661
00501 MAX

l=l~l;~1 OIA
TWO PLACES

DRAIN
(CASE)

t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (lnchesl

11/83

4-110

~UNITRDDE

2N6757
JAN, JANTX, & JANTXV 2N6758
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain - Source Voltage

VDS

2N6757

2N6758

Units

150"

200"

V
V

VDGR
'D·TC·2SoC

Drain - Ga.e Voltage IRGS' 1 Mill

150"

200"

Continuous Drain Current

8.0"

9.0"

A

'D·TC·l00oC

Continuous Drain Currant

5.0"

6.0"

A

12

'DM

Pulsed Drain Current

VGS
PD.TC = 25°C

Gata - Source Volta..

PD. TC -1000C

15

A

.:t20"

V

Max. Power Dissipation

75" (See Fig. 11)

W

Max. Power Dissipation

30' ISee Fig. 11)

'LM

Line.r Derating Factor
Inductive Current, Camped

TJ

Operating and

T"g

Sto,", Temperature Range

W

0.6' (See Fig. 11)
(See Fig. 1 and 2) L = 100 ~H
12
I
15

Lead Temperatur.

W/K
A

-55* to 150·

°C

300" (0.063 in. 11.6mml from case for lOs)

°C

ELECTRICAL CHARACTERISTICS @ TC = 2SoC (Unles~ otherwise specified)
BVDSS

VGSlth) Gate Threshold Voltage

-

Min.

Typ.

Max.

Units

150

-

-

V

2N6758

200

V

10 = 1.0mA

2.0"

-

-

ALL

4.0"

V

VOS=VGS·'o=lmA

Type

Parameter
Drain - Source Breakdown Voltage

2N6757

Tlst Conditions
VGS = 0

'GSSF

Gate - Body Leak. Forward

ALL

-

-

100"

nA

VGS = 20V

'GSSR

Gate - 80dy Leakage Reverse

ALL

-

-

100"

nA

VGS = -20V

'DSS

Zero Gate Voltage Drain Current

VOS'" Max. Rating. VGS "" 0

ALL

-

0.1

1.0"

mA

-

0.2

4.0"

mA

-

-

4.S"

V

VGS = 10V, "0 = SA
VGS = 10V, "0 = 9A

VOS - Max. Ra.ing. VGS - 0, TC = 125°C

VOSCon} Static Drain-Sourc. On-8tate
Vol.age

2N6757
2N6758

-

-

3.6"

V

AOS(on) St8t,ic Drain·Source On-5tat.
Reslltance (0

2N6757

-

0.4

0.6"

n

VGS - 10V, 10 - SA

0.25

0.4"

n

VGS - 10V, 10 - 6A
VGS - 10V, 10 - SA, TC' 125°C

0

2NS758

ROS(on) Static Drain-Source On-State
Resistance

CD

lit.

Forward Transconductance

(0

2N6757

-

-

1.13"

n

2NS758

-

-

0.75"

n

ALL

3.0"

5.0

9.0"

S (U)

VGS = 10V, "0 - 6A, Tc ~ 125°C
VOS' 15V, 10 = 6A

Cill

Input Capacitance

ALL

350"

600

800"

pF

C....

Output Capacitance

ALL

100"

250

450"

pF

C'"

Reverse Transfer Capacitance

ALL

40"

80

ISO"

pF

'd (on)

Turn-On Delay Time

ALL

30"

ns

Rise Time

ALL

-

-

'r

-

50"

ns

VOO ~90V,IO = SA, Zo = 15n
(See Fig•. 13 and 14)

Id (off)

Turn-Off Delay Time

ALL

-

-

50"

ns

(MOSFET switching times are essentially

'f

Fall Time

ALL

-

-

40"

ns

independent of operating temperature.)

VGS = 0, VOS = 25V, f = 1.0 MHz
See Fig. 10

THERMAL RESISTANCE
R. hCS

Case·.o-5ink

Mounting surface flat, smooth, and greased.

R thJA

Junction-ta-Ambient

Free Air Operation

BOOY-ORAIN OIOOE RATINGS AND CHARACTERISTICS
IS

Continuous Source Current
(Body Diode)
Pulsed Source Current
I Body Diode)

VSD

Diode Forward Voltage

2N6758
Irr

Reverse Recovery Time

ALL

ORR

Reverse Recovered Charge

ALL

-JEOEC registered values.

CD Pulse Test:

-

-

-

-

-

0.75"

ISM

(0

-

2NS757
2NS758
2NS757
2NS758
2N6757

-

8.0"
9.0"
12
15
1.50·

0.80"

-

-

650

A

Modified MOSF ET symbol
showing the integral
reverse P-N junction rectif,er.

A

~

V

TC - 2SoC,I S - 8A, VGS - 0

I.S0"

V

TC = 25°C, IS - 9A, VGS' 0

-

ns

T J - lS00C. IF = ISM, dlF/d. = 100 A/~.

~C

T J - 150°C, IF - ISM, dlF/d. - 100 A/~s

10

Pulse Width ~ 300 ,",sec, Duty Cycle ~ 2%

Fig. 2 - Clamped Inductive Waveforms

Fig, 1 - Clamped Inductive Test Circuit
VARY tp TO OBTAIN
REQUIRED PEAK 'L

VGS-R ~O_UT~~r--::r
"l----<>---~-.........,
UNITROOE CORPORATION" 5 FORBES ROAD
LEXINGTON, MA 02173· TEL, (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-111

PRINTED IN U.S A

•

2N6757
JAN, JANTX, & JANTXV 2N6758

Fig. 4 - Typical Transfer Characteristics

Fig. 3 - Typical Output Characteristics

,

2lI

10~r

16

10

8Oj,IS'Ul$ETEST

IJI

IO,..PULS£TEST

r- VD~= 15V

Ii

lV-~

V

/I

2
VGS·6V

- I-

I
TJ".+1250C

,

8

TJ=25 0C

TJ .. -550C
5V- ~

'V_

j

b"

~ '::ill
""- /J.L

2

rn..

~;r

I-

20
40
60
80
Vas. DRAIN·TO·SOURCE VOL lAGE (VOLTS)

I

100

VGS. GATE·lO·SOURCE VOLTAGE (VOLTS)

Fig. 5- Typical Saturation Characteristics

Fig. 6- Typical Saturation Characteristics

(2N6757)

(2N6758)

10

t-- Jo PUlSE nlT

J.~ ",.r~ ~ ~',OV
'V_ r--

ps

J

I~

~ t/< ~ .""-:V t-~~v6V
~r/

'I

.....

_VGS'sv- r--

~

~

r- r--

Ir

J-r-

IL'

1

1

vos. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

Vas. ORAIN·TD-SOURCE VOLTAGE (VOLTS)

Fig.7 - Typical Transconductance Vs. Drain Current

0

Fig. 8 - Maximum Safe Operating Area

0

•

0

r...

TJ= -55°C
6

..,..- I---'"
V V I-V..... I---'" I-'"

4

TJ= 25°C

~100"'

l'I

0

I',

0

I",

!'

TJ= 125°C

o. 5

I

Vas" 15V

~~5.o':~.M~X
..L.l .1

IDC

80 IlS PULSE TEST
4

16151

O. 2

10

5.0

10. DRAIN CURREN! !AMPERES)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

lm.t-

Im:_

,h V
iff

0"':-

.-1-

0

10

20

50

100

12N6J~8
200

500

Vos' DRAIN·TQ-SOURCE VOLTAGE (VOLTS)

4·112

PRINTED IN U.S.A.

2N6757
JAN, JANTX, & JANTXV 2N6758

Fig.9-Normalized Typical On-Resistance Vs. Temperature

Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage

•

2000
VJS'O

2.2

V

V

~

1/

t-1MHz

/

1600

!
z
~

U

§

./
/

800

u'

/'

,-

1200

V

vGs= 10V

400

t-...

l'..
\

10 GA I
1
0

0.2
40

-40

80

120

"- -..... ~

"1"-0..

-

c,.

10
20
30
VoS. oRAIN-To-SoURCE VOLTAGE (VOLTSI

lGO

TJ, JUNCTION TEMPERATURE (DCl

Fig. 11 - Power Vs. Temperature Derating Curve

c,.

50

Fig. 12 - Typical Body-Drain Diode Forward Voltage

80
70

~

50

i

40

'\

I

I

~ 20
10

I II

'""

r----TJOI500C{-JTJ0250C

1.0

1\

20

40

I

1

,,\

30

I

I

1'\

5

'"

r 's,2NG758I

'\

0

iii

10

',,-

60

z

d...'r2NG758

to-- I\.

GO
80
100
TC, CASE TEMPERATURE (OCI

120

I

o

Vso, SOURCE-To-ORAIN VOLTAGE IVoLTSI

140

Fig. 14 - Switching Time Waveforms

Fig. 13 - Switching Time Test Circuit
VGS (on)
INPUT, Vi
_...T--~

j

Vo
TO SCOPE

VGS loffl

__ _

+-,~~P_U_LS_:_~_'D_T_H~
90%

9096

INPUT PULSE
RISE TIME

50%
10%

INPUT PULSE
fALL TIME

"'(0111

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6l7) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-113

PRINTED IN USA

POWER MOSFET TRANSISTORS
400 Volt, 1.0 Ohm
N-Channel

2N6759
J, JTX, JTXV 2N6760

FEATURES

DESCRIPTION

•
•
•
•
•
'.

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RO"'anJ and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Qualified to MIL-S-19500/542A

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

2N6759

350V

1.5n

4.5A

2N6760

400V

LOn

5.5A

MECHANICAL SPECIFICATIONS

342

2222(0875)
MAX alA 11~(O.SO!

2N6759
JAN, JANTX, & JANTXV 2N6760

TO-204AA (T0-3)

10 ":LX
rl~f:::TJNG
TTT
PLANE

Jr,!~~jIOIA--l~

10

TWO PLACES

16{D401 MIN

TWO PLACES

2661
(1 0501 MAX

H:I~l;lIDIA
TWO PLACES

DRAIN
(CASE)

Mgm:~~r
1 MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

11/83

4-114

~UNITRDDE

2N6759
JAN, JANTX, & JANTXV 2N6760
ABSOLUTE MAXIMUM RATINGS
2N6759

2N6760

Units

350"

400"

V

350"

400"

V

Continuous Drain Current

4.5"

5.5"

A

10@TC- 100°C

Continuous Drain Current

3.0"

3.5"

A

10M

Pulsed Drain Current

7.0

8.0

V GS

Gate - Source Voltage

PO@TC= 25°C
PO@TC= 100°C

Parameter

VOS

Drain - Source Voltage

VOGR

Drain - Gate Voltage (RGS

10@TC= 25°C

==

1 MO)

A

.t20"

V

Max. Power Dissipation

75" (See fig. 11)

W

Max. Power Oissipation

30" (See fig. 111

W

0.6" (See fig. 11)
(S•• fig. 1 and 21 L - 100 ~H
7.0
I
8.0

W/K

ILM

Linear Derating Factor
Inductive Current, Clamped

TJ

Operating and

Tstg

Storage Temperature Rang.

Lead Temperature

•

A

-55* to 150·

°c

300" (0.063 in. (1.6mml from ca.. for 10.1

°c

ELECTRICAL CHARACTERISTICS @ TC = 2SoC (Unless otherwise specified)
Parameter

Type

Min.

Typ.

Max.

Units

2N6759

350

-

V

-

V

10 = 1.0mA

4.0"

V

VOS=VGS,IO= 1 mA

Test Conditions

2N6760

400

VGS(thl Gate Threshold Voltage

ALL

2.0"

I GSSf

Gate - Body Leakage Forward

ALL

-

-

100"

nA

VGS - 20V

IGSSR

Gate - Body Leakage Reverse

ALL

-

-

100"

nA

V GS = -20V

lOSS

Zero Gat. Voltage Drain Current

-

0.1

1.0"

mA

Vos - Max. Rating, VGS = 0

-

0.2

4.0"

mA

VOS = Max. RatIng, V GS - 0, T C - 125°C

BVOSS

Drain - Source Breakdown Voltage

ALL

Voston) Static Drain-Source On·State

CD

Voltage

ROS(onl Static

Orain~Source On·Stat8

0

Resistance

ROS(onl Static

Drain~Source On·Stat8

Resistance

g"

0

Forward Transconductance

CD

VGS = 0

2N6759

-

-

7.0"

V

V GS - 10V, 10 - 4.5A

2N6760

-

-

6.7"

V

V GS = 10V, 10 = 5.5A

2N6759

-

1.0

1.5"

n

VGS = 10V,I 0

2N6760

-

0.8

1.0"

n

V GS - 10V, 10 - 3.5A

2N6759

-

n

VGS - 10V, 10 - 3A, TC - 125°C

-

-

3.3"

2N6760

2.2"

n

VGS

ALL

3.0"

4.5

9.0"

S lUI

VOS

Ciss

Input Capacitance

ALL

350"

600

800"

pf

COlS

Output Capacitance

ALL

50"

150

300"

pf

= 3A

= 10V, 10 - 3.5A, TC = 125°C
= 15V, 10 = 3.5A

V GS = 0, VOS = 25V, f = 1.0 MHz
See Fig. 10

Crss

Reverse Transf.r Capacitance

ALL

20"

40

80"

pf

td (anI

Turn-On Delay Time

ALL

-

30"

n.

V OO "" 175V,1 0

tr

Rise Time

ALL

-

-

35"

ns

(S.. figs. 13 and 141

td (0111

Turn-Off Delay Time

ALL

-

-

tf

Fall Time

ALL

= 3.5A, Zo = 15n

55"

ns

(MOSFET sWitching times are essentially

35"

ns

Independent of operating temperature.!

1.67'

KIW
KIW
KIW

THERMAL RESISTANCE

I RthJC
I RthCS
I A thJA

Junction-fa-Case

ALL

Case-to-Smk

ALL

-

01

-

Junctlon-to-Amblent

ALL

-

-

30

I

I
I

Mounting surface flat. smooth, and greased
Free Air Operation

BODY·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

2N6759

Continuous Source Current
(Body Diode)

2N6760
2N6759
2N6760
2N6759

0.70"

4.5"
5.5"
7.0
8.0

A

1.4"

V

Modified MOSF ET symbol
shOWing the integral
reverse P·N Junction rectlflSr.

~

ISM

Pulsed Source Current
(Body Diode)

VSO

Diode Forward Voltage

2N6760

0.75"

-

1.5*

V

T C = 25°C, IS

t"
C RR

Reverse Recovery Time

ALL

-

550

-

ns

T J = 150°C. If = ISM. dlf/dt = 100 A/~s

Reverse Recovered Charge

ALL

-

8.0

-

"C

T J - 150°C, If = ISM, dlf/dt - 100 A/~s

*JEDEC registered values.

CD

CD Pulse Test:

A
T C - 25°C. IS - 4.5A, VGS - 0

= 5.5A.

VGS = 0

Pulse Width ~ 300 1l5eC, Duty Cvcle ~ 2%

Fig, 1 - Clamped Inductive Test Circuit

Fig, 2 - Clamped Inductive Waveforms

VARY tp TO OBTAIN
REOUIRED PEAK IL

VGS'

R

~D_UT~'-'-::r
Il

+-_-6---+-....,.,I\o-.J

UNITROOE CORPORATION" 5 FORBES ROAO
LEXINGTON, MA 02173 " TEL. (617) 861-6540
TWX (7101 326·6509 " TELEX 95-1064

4·115

PRINTED IN

u.s

A

2N6759
JAN, JANTX, & JANTXV 2N6760
Fig. 3 - Typical Output Charactaristics

'f

Fig. 4 - Typical Transfer Characteristics

80 joIS PULSE TEST

V
VG!·5.!V;;;;

F f=

5.0V""

f-- f""

r

801II"ULSETEtr

Vas'" 15V

TJ=+125 0 C

I
I

TJ' 250~",""
TJ ••55'~~

4.5V

1-1

I

'1V""
50

100

L&

F"'" F=

250

200

150

300
VGS. GATE·TO-SOURCE VOLTAGE (VOLTS)

Ves. DRAIN·TO.sOURCE VOL lAGE (VOLlSI

Fig. 6- Typical Saturation Characteristics

Fig. 5- Typical Saturation Characteristics

(2N67601

(2N67591

J. .l J

SOli' PULSE TEST

J

Id~ffv

Jv

~

5

-

VGS"

IDJffv

- JOIIS')LSETJT

s.ov

AV

If

J
(,.

4.5V- f0-

r

45V- f-

J

I

I

I

4.0V- f--

I

4
Vas. DRAIN TO·SOURCE VOL lAGE (VOLTS)

V

4I~ 1==

r

10

10

vas. DRAIN·TO.sOURCE VOLTAGE (VOLTS)

Fig.7 - Typical Transconductance Vs. Drain Current

Fig. 8 - Maximum Safe Operating Area
10

10

2N6760

1D~s

ZN 759

2N6760

5.0

V

fi V,......

II V

III'

-VG"50V- ~

P
I'

IV"

I

'oj

'IJ
rt

----

t:::-

t-r-

I...

TJ=-550C -

'.

\

~

N6759

2.0

I'

z

w

TJ= 25°C

~

1.0

, ,

I

~

i
1m,

0.5

'\.

_Co

0.2

-

SINGLE PULSE

I
10

f.lo1m,

"'"

TJ " 1500 C MAX

I

10

I

~

z

180,uSP~lSETEIST

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

I

I
·~100j.lS

i3

TJ. ,25Jc

Vas" 15V

4
'0. DRAIN CURRENT (AMPERES)

'\.

~

20

50

N6759

100

200

I

-.J.
I

I

DC
ZNS 6

500

Vas. DRAIN·TD·SDURCE VDLTAGE (VOLTS)

4-116

PRINTED IN U.S.A.

2N6759
JAN, JANTX, & JANTXV 2N6760

Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage

Fig.9-Normalized Typical On·Resistance Vs. Temperature

2DOO

~Gs·6

~

2.2

t"' 1 MHz

~

•

1600

V

V
/

~

/

V

V

/

\

400

VGS·IOV

Ir3.5~

-'"

~~

I--

0.2
-40

..... C/SS

40

120

80

~
10

160

TJ, JUNCTION TEMPERATURE (OCI

Fig. 11 - Power V•. Temperature Derating Curve
80
70

i
z

-

30

50

Fig. 12 - Typical Body-Drain Diode Forward Voltage

T 'SM. 206760

""\.

I

'\

60

50

/

"\

..c

'\

~ 30

:<

20

~

10

20

~IS.2N6760

/ II

'\

0

I

I

'\.

E
40
iii
.P

20

Vas. DRAIN-lO·SOURCE VOLTAGE (VOLTS)

40

60
80
lDO
Te. CASE TEMPERATURE (DC)

,,~,-~t.,-

I

\.

120

Fig. 13 - Switching Time 'Test Circuit

1.0

"

o

I
I

VSQ. SOURCE·la·DRAIN VOLTAGE (VOLTS)

140

Fig. 14 - Switching Time Waveforms
PULSEIpWIDTH
VGS(on)

O%

~

INPUT. VI

-~--·~~SCOPE

VGS (off)

INPUT PULSE
RISE TIME

1==

td (on)

~
90%

··'·"T'-'I

50%
10%

INPUT PULSE
FAll TIME

td (off)

I'

OUTPUT,V o
""J90%
VOS 1..1 : - :
I" ';;;;" __~::J'
10n--l

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-117

PRINTED IN U.S A

POWER MOSFET TRANSISTORS
500 Volt, 1.5 Ohm

2N6761
J, JTX, JTXV 2N6762

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros.on) and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Qualified to MIL-S-19500/542A

The Unitrode power MOSFET features all of the. advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

2N6761

450V

2.00

4.0A

2N6762

500V

1.50

4.5A

MECHANICAL SPECIFICATIONS

22.2210"5)
342

MAX OIA

IJUI~

2N6761
JAN, JANTX, & JANTXV 2N6762

TO·204AA (TO·3)

I013J:~~
-r-

SEATING

PlAAE

~nl~rJID1A-11--

10 ISfOotOI MIN

TWO PLACES

TWO PLACES

2UI
(I OSOI MAX

;111~mIOIA
TWO PLACES

DRAIN
(CASEI

SOURCE

t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

11/83

4·118

~UNITRODE

2N6761
JAN, JANTX, & JANTXV 2N6762
ABSOLUTE MAXIMUM RATINGS
2N6762

Units

V

450"

500"
500"

Continuous Drain Current

4.0"

4.5-

A

IO·TC·IOOOC

Continuous Drain Current

2.5"

3.0"

A

10M

Pulsed Drain Current

6.0

7.0

VGS

Gatl - Source Voltage

',remltlr

2N6761
450"

VOS

Drain - Source Voltage

VOGR
IOOTC·2SoC

Orain - Gat. Voltage (RGS = I MOl

=25°C

V

A

%20·

V

W

M. •. Power Dillipltion

75" (See Fig. III

POOTC'IOOOC

Max, Power Oiuipltion

30" (See Fig. III

W

0.6" (See Fig. III
(See Fig. I and 21 L 100 ~H
6.0
I
7.0

W/K

ILM

Line.r Derating FlCtOr
Inductive Current, Clamped

TJ
T,tg

Operating and
Storage Temperature Range

-55* to 150-

°C

300" (0.063 in. (1.6rnml from case for lOll

°C

PO. TC

=

L.ead Temperatur.

•

A

ELECTRICAL CHARACTERISTICS @ TC = 2S"C (Unless otherwise specified)
'aram.ter
avOSS

Drain - Source Breakdown Voltage

Type

Min.

2N6761

450

Typ.

-

Max.

Units

-

V
V

4.0"

V

VOS=VGS,IO= I mA

100"

nA

VGS • 20V
VGS = -20V

Tlst Conditions

VGS' 0
IO=4.0mA

2N6762

500

-

VGSfthl Gate Threshold Voltage
IGSSF
Gatl Body Leakage Forward

ALL

2.0"

IGSSR

Gate - Body Leakage River..

ALL

-

100"

nA

lOSS

Z.ro Gate Voltage Drain Current

0.1

1.0"

mA

V DS • O.B X Max. Rating, VGS - 0

0.2

4.0"

mA

Vos =- Ma>c. Rating, VGS - 0, TC - 25°C to 12SoC

ALL

-

ALL

VOS(on) Static Drain-Source On·State
Voltage

2N676 I

-

V

-

-

B.O"

2N6762

7.7"

V

v GS = 10V, 10 ' 4.5A

ROSfonl Static Drain-Source On-State
Resistance

2N6761

-

I.S

2.0"

0

VGS

1.3

1.5"

0

VGS

-

4.4"

0

3.3"

0

0

CD

-

2N6762

ROSlonl Static Drain·Source On-5tate
Rllistance

2N6761

0

2N6762

0

VGS = 10V, 10 = 4A

= 10V, 10 = 2.SA
= 10V, 10 - 3.0A
VGS = 10V, 10 = 2.SA, TC = 12S o C
VGS = 10V, Ie. = 3.0A, TC - 125°C
VOS = 16V, 10 = 3A

gls

Forward Transconductance

ALL

2.5"

3.5

7.5"

5 (UI

Cin

Input capacitance

ALL

350"

600

800"

pF

C_

Output Capacitance

ALL

2S"

100

200"

pF

Cm

Rever.. Transf.r Capacitance

ALL

IS"

30

60"

pF

td (onl

Turn-On Delay Time

ALL
ALL

-

n.

Rise Time

30"

n.

V DD '" 225V, 10 - 3A, Zo - ISO
(Se. Figs. 13 and 141

'd loffl
't

Turn-Off D.'ay Time

ALL

-

30"

tr

55"

n.

(MOSFET switching times are essential IV

Fill Time

ALL

30"

"'

independent of operating temperature.)

-

THERMAL RESISTANCE
RtI!JC
R thCS

Junction·to-case

R thJA

Junction·to-Ambient

ea..·to-Sink

I

ALL

I
I

ALL

I -

I -

I

1.67"

I

I - I 0.1 I - I
I - I - I 30 I

ALL

KIW
K/W
KIW

VGS • 0, VOS
Se. Fig. 10

= 25V, f·

1.0 MHz

I

I

I Mounting surface flat, smooth, and greased.
I FrH Air Operation

J
I

BODY·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

Continuous Source Current
(Body Oiodel

-

2N6761
2N6762
2N6761
2N6762
2N6761

0.65"

ISM

Pulsed Source Current
fBody Diodel

VSO

Diode Forward Voltage

2N6762

0.7"

-

trr

Rever.. Recovery Tim.

ALL

-

500

QRR

Reverse Recovered Charge

ALL

-

7.0

*JEOEC registered values.

C0

CD Pulse Test:

Pulse Width

-

4.0"
4.5"
6.0
7.0

A

Modified MOSFET symbol
showing the integral
rever .. P-N junction rectifier.

A

~

V

TC - 2SoC, IS - 4A, VGS = 0

1.4"

V

TC· 25°C, IS =4.5A, VGS' 0

-

n.

TJ = 150°C, IF - ISM, dlFldt· 100 AI~.

-

~C

T J = 150°C, IF' ISM, dlF'dt = 100 AI~.

1.3"

< 300 "sec, Duty Cycle:S;;;; 2%

Fig, 1 - Clamped Inductive Test Circuit

Fig, 2 - Clamped Inductive Waveforms

VARY tp TO OBTAIN

VGs.R

REQUIRED PEAK 'L
OUT
IL+---<~-~"""'_......J

UNITROOE CORPORATION" S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·119

PRINTED IN

u.s

A

2N6761
JAN, JANTX, & JANTXV 2N6762

Fig. 4 - Typical Transfer Characteristics

Fig. 3 - Typical Output Characteristics

•

10V

5.5V-

I I I

,

I-- t -

I

10", PULSE TEST

f--11O".LLS£I UST

5

If

Ves= 16V

•

- I-

VG5' 5OV-

I--- _TJ=~1250C

3

I--- -TJ;-55'C, ~
TJ' 2"C-..

t---..,'-.....h,l

'r" F F

ri

/ VI

1

+=1=1=

~
1

300

100
200
Vas. DRAIN TO SOURCE VOLTAGE (VOLlS)

Fig. 6- Typical Saturation Characteristics

Fig. 5- Typical Saturation Characteristics

8)111 PUlt TESJ

/
L- .,....

#

(2N6762)

,

(2N6761)
I-

4'
VGS. GATE TO SOURCE VOLTAGE (VOL lSI

lO:Y I-V;5r-

-ll'sl'OrsETElr

/

3

~

)

1

YGS

",=

2

~

Vas. QRAIN·TO·SOURCE VOLTAGE (VOL IS)

,
3

.,,1--4"

/'

/

/ V
V V I--""

JI V

1

.;'

IJ V
IVI
r

'Y5.l=

vGs''',v-

,..-

..:V~

/

I.

I.

Vas. DRAIN TO SOURCE VOL rAGE (VOL IS)

Fig. 8 - Maximum Safe Operating Area

I.

--

2N6762

10~s

,

2N6761

~

-

,.

~

I'

2.0

:!

....
z

=
=

,

2NB761

5..~.

TJ'2~

.;'~~.L-

I--

/. ~

Fig. 7 - Typical Transconductance Vs. Drain Current

T,"-55'~:'"

~ :,......

~

~~

4Ot~ ~

I"

7

/

I

J

5

l~

•

50t=1..-::

It--

.

r-..
1.0

' ...
"

"

,

"

'\[

lOOps

T

~

u

z

~

-"

1~

0.5

1--+-+-+-+-H+J++-'-"I.--+--''k--+rf-l~4-l
]1
1--+--+-+-++-++t++--+-+>.rt-+N
1 lqj
TJ "'1500CMAX.
i
I

02 f--SINGlEPUl5E

Ves'" 16V
80jl$PUlSE TEST

+++I+++--+-+-AJ.l-I-J+t++
1+1

I I

2N6761i

~ZJ62

lL-~~-L-L~LLU--L-L~~~~~

W
10. DRAIN CURRENT (AMPERES)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

w

w

~

~

~

Vas. ORA.IN-TO·SOURCE VOLTAGE (VOlTSj

4-120

PRINTED IN U.S A

2N6761
JAN, JANTX, & JANTXV 2N6762

Fig.9-Normalized Typical On·Resistance Vs. Temperature

Fig. 10 - Typical Capacitance VI. Drain-to-Sourca Voltaua
2000

I

2.2

'-1MHz
1600

L

!

L
./

./

6

.V

V

o.2

1200

~
U

§

/

0

l\.

800

u

lL
VGS-10V

Irl.5~

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

ellS

1\

,\

'00

......

\

~

~

160

,......

10
20
30
40
VOS. ORAIN·TO·SOURCE VOLTAGE IVOLTS)

Fig. 11 - Power VI. Temperature Derating Curve
~

~

z

~

50

ill
~

.P

30

20

1"-

10

~

1.0

l\
20

ISM.2N6'62

/

~

is

~

r
I

IS.2NG'62

'\

40

I

/ #

\,

0

~

I

'~

60

50

Fig. 12 - Typical Body.Drain Diode Forward Voltage

80

'0

•

JGS - 01

1/

40
80
100
60
TC. CASE TEMPERATURE 10C)

120

".,-~t~I J

o

Vso. SOURCE·TO·ORAIN VOLTAGE IVOLTS)

140

Fig. 14 - Switching Time Waveforms

Fig. 13 - Switching Time T... t Circuit

PULSEI~IDTH~

VGS (on)

---+-'-::::----~

INPUT,V I

Vo

_-r--? TO SCOPE

VGS loff)
td(on)

O%

~

90%

INPUT PULSE
RISE TIME

J:

50%
10%

INPUT PULSE
FALL TIME

ltttofl)

I
'''~'T'-II

9UTPUT,V o
~90%
VOS l o o ) l ' [ _ _-+";';;J

ton---f

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-121

PRINTED IN U.S A

POWER MOSFET TRANSISTORS
100 Volt, 0.055 Ohm

2N6763
J, JTX, JTXV 2N6764

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROBlon. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Qualified to MIL-S-19500/543A

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

Vos

ROS(on)

10

2N6763

60V

0.080

31A

2N6764

100V

0.0550

38A

MECHANICAL SPECIFICATIONS

2~!~'~:!"

342

"'1 '04'81

jom1MAX~3

2N6763
JAN. JANTX, & JANTXV 2N6764

TO·204AE (TO-3 modified)

(025

~

SEATING

...L
T

PLANE

160!°f,I01A
II
14510
-'1
TWO PLACES

'falUl~1

1

TWO PLACES

2661

I 0501 MAX

;UI:'1;UDlA

TWO PLACES

DRAIN
(CASEI
SOURCE

n·gl~1;glf
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

11/83

4-122

~UNITRDDE

2N6763
JAN, JANTX, & JANTXV 2N6764

ABSOLUTE MAXIMUM RATINGS
2N6763

2N6764

Units

VoS

Drain - Source Voltage

50"

100"

V

VoGR
10@TC- 2SoC

Drain - Gate Voltage (RGS '" 1 Mil)

100"

V

Continuous Dram Current

50"
31"

38"

A

10@TC' 100°C

Continuous Drain Current

20"

24"

A

10M
VGS

Pulsed Drain Current

60

70

Gate - Source Voltage

;,20"

V

Po@TC- 2SoC

MIX, Power Dissipation

ISO" (See Fig. 111

W

Po@TC= 100°C

Max. Power Dissipation

60" (See Fig. 111

W

Linear Derating Factor

1.2" (See Fig. 111
(See FIg. 1 and 21 L - 100 ~H
60
I
70

WIK

Parameter

ILM

Inductive Current, Clamped

TJ

Op8!ating and
Storage Temperatur. Range

TitS

Lead Temperatur.

A

A

-55· to 150·

°C

300· 10.063 In, f1.6mm) from case for 10s)

°c

ELECTRICAL CHARACTERISTICS @ TC = 25°C (Unless otherwise specified)
'arameter
BVOSS

Drain - Source Breakdown Voltage

Test Conditions

Type

Min.

Typ.

Max.

Units

2N6763

60

-

-

V
V

10 = 1.0mA

4.0"

V

VOS=VGS,lo=lmA

100"

nA

VGS - 20V

100"

nA

VGS - -20V
VOS'" Max. Rating, V GS '" 0

VGS = 0

2N6764

100

VGSlthl Gate Threshold Voltage
IGSSF
Gate - Body Leakage Forward

ALL

2.0"

ALL

-

IGSSR

Gate - Body Leakage Reverse

ALL

-

lOSS

Zero Gate Voltage Drain Current

-

0.1

1.0"

mA

ALL

0.2

4.0"

mA

VOS(on) Static Drain-Source On·State
Voltage

2N6763

-

-

2.4S"

V

2N6764

-

-

2.09"

V

V GS = 10V, 10 - 3SA

RoS(onl Static Drain-Source On-State
Resistance

2N6763

-

0.06

O.OS"

VGS = 10V, 10 = 20A

2N6764

RoS(onl Static Orain-Source On·State
Resistance

2N6763

-

CD

CD

0

CD

Vas'" Max. Rating. V GS - O. T C - 125°C

VGS = 10V 10 = 31A

0.045

0.055"

n
n

-

0.136"

u

VGS = 10V, 10 = 20A, T C

0.094"

n

VGS - 10V, 10 - 24A, T C - 125°C

2N6764

V GS - 10V, 10 - 24A
=

125°C

g"

Forward Transconductance

ALL

9.0"

12.S

27"

5 (UI

Cill

Input capacitance

ALL

1000"

2000

3000"

pF

Coss

Output Capacitance

ALL

SOO"

1000

IS00"

pF

C....

Reverse Transfer Capacitance

ALL

ISO"

3S0

500"

pF

'd (onl

Turn-On Oelay Time

ALL

-

-

3S"

ns

VoO"" 24V,IO = 24A, Zo = 4.7!l

I,

Rise Time

ALL

100"

n.

(See Figs. 13 and 141

'd (off)

Turn-Off Oelay Time

ALL

Fall Time

ALL

I,

-

-

VOS - ISV, 10 - 24A
VGS' 0, VoS = 2SV,"

1.0 MHz

See Fig. 10

12S"

ns

(MOSFET switching times are essentially

100'

n.

Independent of operating temperature.)

0.83"

KfW
t<.fW

Mounting surface flat. smooth. and greasad.

30

KIW

Free Air Operation

3'38"

A

THERMAL RESISTANCE
R thJC

Junction-to-Case

ALL

RthCS

C.se-to-8ink

ALL

R thJA

Junction-ta-Ambient

ALL

01

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
ISM

Continuous Source Current
(Body oiodel
Pulsed Source Current
(Body oiodel

2N6763
2N6764
2N6763
2N6764
2N6763

-

-

-

-

70

0.90"

-

I.S"

-

-

VSo

Diode Forward Voltage

2N6764

0.9S"

-

I"

Reverse Recoverv Time

ALL

-

500

Q RR

Reverse Recovered Charge

ALL

• JEOEC registered values.

o

CD

60

Modified MOSF ET symbol
showing the integral
reverse P-N Junction rectifier.

A

~

V

TC - 2SoC,I S - 31A, VGS - 0

1.9"

V

T C - 2SoC, IS = 3SA, VGS = 0

-

ns

T J = IS00C,IF = ISM,dlFldl = 100 AI~s

~C

T J = IS00C. IF = ISM, dlFldt = 100 AI~s

10

Pulse Test: Pulse Widlh .;; 300 ~sec, Duty Cycle';; 2%

Fig. 1 - Clamped Inductive Test Circuit

Fig. 2 - Clamped Inductive Waveforms

VARY I. TO OBTAIN
REQUIREO PEAK IL

VGS·

R

uO_UT~~r..".
IL ....-_<>-_-....-'lM---'

UNITROoE CORPORATION" 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4-123

PRINTED IN U.S A.

•

2N6763
JAN, JANTX, & JANTXV 2N6764

Fig. 3 - Typical Output Characteristics
&0

/

~

!

30

z

2D

i

30

I

i

I

i
~

'"
E

"j

10

15

hI!
1TJ-25I C...........VI
~J'-55! ""-j rtf
i -Ch J
A/ 'I

TJ -+1250C

z

&~

'"
E

II
III

20

~

7~

~

"
'1

I

r- VOS"5V

iii

I

IJL

r

r IO~PULSE~EST

25

·JGsa.l

40

iii

Fig. 4 - Typical Transfer Characteristics

t

8O/dPULSET~ST

lovllav

10

0

5~
.~
10

20

~

30

40

&0

Vos. ORA1N·TO-SOURCE VOLTAGE IVOLTS)

VGS. GATE·TO-SOURCEVOLTAGE (VOLTS)

Fig. 6- Typical Saturation Characteristics

Fig. 5- Typical Saturation Characteristics

(2N67641

(2N67631
20
VGS"ff!

/

20

.J/dPUJE TESJ _

r-

Jt{
8V

1&

V//J{

~

,4 Vii"

~

~ 12

IJIJ

i

Jr/

z

~V

E

~V

~

I

,.

0.'

0.&

/

,~~

1.6

&V~

~

-

.,....
1.2

7V

~~

!~ '/ "...

I
y

~~

I..- ~

-

JJ V /'

8

5r

JV
'r

12

/&1"

~ l/
~:~ V

Vw

18

-

"...

J/d PUiETE!

2.0

5V

'V

0.4

1.2

0.8

1.6

2.0

VDS. DRAIN·TO·SOURCE VOLTAGE IVOLTS)

Vos. DRAIN·TO·SOURCE VOLTAGE (VOLTS)

Fig. 7 - Typical Transconductance Vs. Drain Current

Fig. 8 - Maximum Safe Operating Area
1110

20

2N6764

0

2

/. ~ V-

V- I~

TJ.~550C -;;;;

.

~

~6~

TJ-250C

0

"
'. , ,

I'\.

0

~

0

II '/
1/

~

I

I

2. 0

j;"'PUrETEr - r20

30

40

1.0
3.0

50

10. DRAIN CURRENT IAMPERES)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1001l-s- -

~,

lin,

I'-.

10ml- e.-

TJ= 1500C MAX.
SINGLE PULSE

VOS=15V

,

10

"

2N6763

--D=+l250 C-

1.:0- ""

8

10",- 2N

50

IIIIII

DC

Ii III
5.0

10

206763
20

50

-e-

'NilS'
100

200

VOS' ORAIN·TO·SOURCE VOLTAGE IVOLTS)

4-124

PRINTED IN U.S.A

2N6763
JAN, JANTX. & JANTXV 2N6764

Fig.9 - Normalized Typical On·Resistance Vs. Temperature

Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage
4000

VG~'O

2.2

3200

/'

~\

V

I~

V
V

\.
BOO

vGS -IOV
ID'24A

40
80
120
TJ. JUNCTION TEMPERATURE (aC)

~

r"-

C!..

"- r-.....

0.2
-40

c,..

\ ~

....... V

...

•

f" 1 MHz

\

to.1
c'"

10
20
30
40
VOS. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

160

50

Fig. 12 - Typical Body-Drain Diode Forward Voltage
Fig. 11 - Power Vs. Temperature Derating Curve
ISM.2N6764

""I\.

140

120

I

'\

~

80

~
i3

1,\

iii
6

20

/

40
80
80
100
TC. CASE TEMPERATURE (aC)

10

t

.

I-TJ-150aC r TJ'25aC

w
u

""

20

II

$

'\

z

co

i

120

I

~

L

!b

1.0

!\

IS. 2N6764

VI

!Ii

I\.

r---

I

o
VSO.SOURCE·TO·ORAIN VOLTAGE (VOLTS)

140

Fig. 14 - Switching Time Waveforms
Fig. 13 - Switching Time Test Circuit
VGS(on)

PRF "'1 kHz
tp"lps

INPUT, Vi

v,

_.J'--'"

r-----.,
I
20
I
4.m I
I n.
I
I 20V
.L
____ .JI

20

Va
TO SCOPE

VGS (aH)

INPUT PULSE
FALL TIME

["~I~

4.70

~_ _~9~;;;,

t..--toff

UNITRODE CORPORATION, 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

4-125

PRINTED IN U S.A

POWER MOSFET TRANSISTORS
200 Volt, 0.085 Ohm
N-Channel

2N6765
J, JTX, JTXV 2N6766

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RDSlanl and a high transconductance.

Fast Switching
Low Drive Cu rrent
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Qualified to MIL·S·19500/543A

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high·power switching
applications such as switching power supplies, motor controls, and wide·band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDs

RDS(on)

ID

2N6765

150V

0.1200

25A

2N6766

200V

0.0850

30A

MECHANICAL SPECIFICATIONS
2N6765
JAN, JANTX, & JANTXV 2N6766

TO·204AE (TO·3 modified)

222210875)

"13±x~.AX
DlA~~
SEATING
PLANE

T
::~I~:;~IDIA -I

:fal~3m

TWO PLACES

TWO PLACES

2667
(I 0501 MAX

a:

I~'I~U OIA
TWO PLACES
DRAIN

(CASE')
SOURCE

~U~I~':~lt
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (lnchesl

11/83

4·126

~UNITRDDE

2N6765
JAN, JANTX, & JANTXV 2N6766
ABSOLUTE MAXIMUM RATINGS
2N6765

2N6766

Units

VOS

Drain - Sourte Voltage

150'

200'

V

VOO R
10@TC-250C

Drain - Gate Voltage (AGS - , MOl

150'

200-

V

Continuous Drain Current

25'

30'

A

10@TC=loooC

Continuous Drain Current

16-

19'

A

50

60

A

Parameter

10M

Pulsed Drain Current

VOS
PO @T C -250C

Gate - Source Voltage

±20'

V

Max. Power Dissipation

150' (See Fig. 111

W

PO@T C - 100°C

Max. Power DISSipation

60' (See Fig. 111

W

Linesr Derating Factor

1.2- (See Fig. 111
(See Fig. 1 and 2) L - loo~H
50
I
60

W/K

ILM

Inductive Current, Clamped

TJ
T ltg

Operating and

-55* to 150-

°C

300' (0.063 in. (I.Bmml from ca.. for lOs)

°c

Storage T amparature Range
Lead Temperature

II

A

ELECTRICAL CHARACTERISTICS @ TC = 25°C (Unless otherwise specified)
Parameter

BVOSS

Drain - Source Breakdown Voltage

VOS(thl Gatl Threshold Voltage

Type

Min.

Typ.

Max.

Units

2N6765

150

-

V
V

10= 1.0mA

4.0'

V

VOS=VOS,IO=1 mA

100'

nA

VOS - 20V

100'

nA

VOS = -20V

Test Conditions

2N6766

200

ALL

2.0'

-

-

-

0.1

1.0'

mA

VOS = Max. Rating, VOS = 0

0.2

4.0'

mA

V OS = Max. Rating, VOS = 0, T C = 125°C

3.0·

V

2.7-

V

VOS = 10V, 10 = 30A

IOSSF

Gate - Body Leakage Forward

ALL

IOSSR

Gate - Body Leakage Reverse

ALL

lOSS

Z.ro Gate Voltage Drain Current

ALL

VOS=O

V OS(onl Static Drain·Source On-State
Voltage

2N6765

-

2N6766

-

-

ROS(onl Static Drain-Source On-State

2N6765

-

0.09

0.12'

n

VOS = 10V, 10 = 16A

2N6766

-

0.07

0.085'

n

VOS = 10V, 10 = 19A

2N6765

-

0.216'

n

Vos = 10V, 10 = 16A, TC = 125°C

2N6766

-

-

0153'

n

Vos - 10V, 10 - 19A, TC - 125°C

ALL

9.0'

15.5

27"

S (UI
pF

CD

Resistance

CD

ROS(onl Static Dram-Source On-State
Resistance

CD

CD

VOS = 10V, 10 - 25A

gfs

Forward Transconductance

C isl

Input Capacitance

ALL

1000'

2000

3000'

Coss

Output Capacitance

ALL

450'

800

1200'

pF

Cr ..

Reverse Transfer Capacitance

ALL

150'

300

500'

pF

td (onl

Turn-On Delay Time

ALL

-

-

35'

ns

VOO;>; 95V, 10 = 19A, Zo = 4.7n

tr

Aise Time

ALL

-

-

100'

ns

(See FIgs. 13 and 14)

td (offl

Turn-Off Delay Time

ALL

-

-

125'

ns

(MOSFET switching times are essentially

tf

Fall Time

ALL

-

100'

ns

Independent of operating temperature.)

VOS - 15V, 10 - 19A
Vos = 0, VOS = 25V, f = 1.0 MHz
See Fig. 10

THERMAL RESISTANCE
R,hJC

Junction-to-Case

I

ALL

R thCS

Case-to-Sink

R'hJA

Junction-to-Ambient

I
I

ALL

ALL

I

-

I

-

I

I
I

-

I
I

0'

I
I

-

-

0.83'

30

I

I
I

KIW
KIW
KIW

I
I Mounting surface flat, smooth, and greased.
I Free Air Operation

I

I
I

BODY·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
ISM

-

25-

-

30'
50
60

A

1.7"

V

TC - 25°C, IS = 25A, VOS = 0

0.9'

-

I.S·

V

T C = 25°C, IS = 30A, VOS

-

500

-

ns

T J - 150°C, IF' ISM, dlF/dt = 100 A/~s

~C

T J = 150°C, IF = ISM, dlF/dt = 100 A/~.

-

Continuous Source Current

2N6765

(Body Diodel

2N6766
2N6765
2N6766
2N6765

0.S5·

2N6766
ALL

Pulsed Source Current

(Body Diodel

CD

VSO

Diode Forward Voltage

trr

Reverse Recovery Time

ORR

Reverse Recovered Charge

·JEDEC registered valull.

CD Pulse Tost:

-

ALL

10

A

Modified MOSFET symbol
showing the integral
reverse P-N Junction rectifier.

~

=0

Pulse Width';;; 300 ~sec, Duty Cycle';;; 2%

Fig. 2 - Clamped Inductive Waveforms

Fig. 1 - Clamped Inductive Test Circuit
VARY tp TO OBTAIN

vGs=R ~D_UT_'-r-"
REQUIRED PEAK IL

IL+---<>---_-"M---'
UNITRDOE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (7101 326·6509 • TELEX 95·1064

4·127

PRINTED IN USA.

2N6765
JAN, JANTX, & JANTXV 2N6766

Fig. 3 - Typical Output Characteristics
50
UriI!J9V
.8V
40

'h. PULSE TEST

J J
VGS'7V-

V

Fig. 4 - Typical Transfer Characteristics
30

-

~
3

...
z

,.~

30

av-

I

-

~

~

I

rl

25 -IOI

z

V

E

'V

I2D

Fig. 8 - Maximum Safe Operating Area

loo.mm~.
Z~~++~

.J-'"'""

10~-

2N676

50
20

V. V

~

l~

TJ;; 125°C

w

~

~DS 'I~V

/)

I-

0.8
1.2
16
D.'
VoS. oRAIN·TO·SOURCE VOLTAGE IVOLTS)

1/1;. 25JC

I. V
1/ 1/I-"'""
l/

VGS·5V

"....
./

I"""

2.0

Fig. 7 - Typical Transconductance Vs. Drain Current

-50~C

i/

9V
8V
7V_

~

~

T;'

~

V

'V_

ZO

,

r8 V

~ r--.:

/. V

~

Q4
OJ
12
1.6
Vos. DRAIN·TD·SOURCE VOLTAGE IVOLTS)

IreST

16

.13
i..
..

A[/

.E

IDV-;
80 I~

co'" 1.4
0:'

V

~~
~
co

3200

1.0

j
0.6

0.2

r-

-

~

l/

2400

~

;u-

./'"

1600

\
,\

l~
\ ~

\

. /~

40

80

120

160

.....

.......

C",

20

-

30

40

Fig. 12 - Typical Body·Drain Diode Forward Voltage

"-

ISM,2N6766.___

¥

'I\.

tS,2N~766

",,-

/,

"\

//

"

TJ""500~HTJ=250C

I'\..

20

II

"

2

\

20

.r-

VOS. ORAIN·TO·SOURCE VOLTAGE IVOLTSI

Fig. 11 - Power Vs. Temperature Derating Curve

120

C:"

i'...

10

TJ. JUNCTION TEMPERATU RE lOCI

140

C,g

~

r\.

800

-40

MHz

60
80
100
Te,eASE TEMPERATURE lOC)

40

120

1.0

140

o
VSO,SOURCE·TO·ORAIN VOLTAGE IVOLTS)

Fig. 14 - Switching Time Waveforms

Fig. 13 - Switching Time Test Circuit

PUlSEt~IDTH~
VGS 1001 ---+-~"""---..,
Va

_.r--'P TO SCOPE

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

INPUT,V I

VGS loffl

4·129

90%

90%

50%

111%

PRINTED IN U.S A

•

POWER MOSFET TRANSISTORS
400 Volt, 0.3 Ohm

2N6767
J, JTX, JTXV 2N6768

N-Channel

DESCRIPTION

FEATURES
•
•
•
•
•
•

Fa~t Switching

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros,o"' and a high transconductance.

Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Qualified to MIL-S-19500/543A

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDs

RDS(on)

ID

2N6767

350V

0.40

12A

2N6768

400V

0.30

14A

MECHANICAL SPECIFICATIONS

34,

'~!~'~:~5I "1m~i

"13J:~~"
-r-

2N6767
JAN, JANTX, & JANTXV 2N6768

TO·204AA (TO·3)

SEATING

PL~E

JnI8ImIDIA--I~
TWO PLACES

10 16 (040) MIN
TWO PLACES

;=!~IWD'A

TWO PLACES

DRAIN
(CASE)

;~ ~~ I~:;glt
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

11/83

4-130

~UNITRDDE

2N6767
JAN, JANTX, & JANTXV 2N6768
ABSOLUTE MAXIMUM RATINGS
Parameter

2N6767

2N6768

Units

VOS

Drain - Source Voltage

3S0"

400"

V

VOGR
10@TC-250C

Drain - Gate Voltage fRGS - 1 MO)

3S0"

400"

V

Continuous Drain Current

12"

14"

A

10@TC- 100°C

Continuous Drain Current

7.75"

9.0"

A

10M

Pulsed Drain Current

20

2S

A

VGS
PO @TC-2SoC

Gate - Source Voltage

..20"

V

Max. Powlr Dissipation

ISO" (See Fog. 111

W

PO@TC- 100°C

Max. Power Dissipation

60·

Linear Derating Factor

ILM

Inductive Current, Clamped

TJ
T stg

()peratlng and

{See

Fig. 111

Lead Temperature

W/K
A

-55· to 150·

°C

300· (0.063 10. 11.6mm) from case for lOs)

°C

Storage Temperature Range

II

W

1.2" (See Fog. 111
(See Fog. 1 .nd 21 L - 100 "H
20
I
2S

ELECTRICAL CHARACTERISTICS @ TC = 25°C (Unless otherwise specified)
Parameter
BVOSS

Drain - Source Breakdown Voltage

Typo

Min.

Typ.

Max.

Units

2N6767

3S0

-

-

V

-

V

'0'" 1.0mA

4.0"

V

VOS - VGS. 10 - 1 mA

-

100"

nA

VGS - 20V

-

100"

nA

VGS - -20V

0.1

1.0"

mA

Vas -

-

0.2

4.0"

mA

VOS'" Max. Rating, VGS

2N6767

-

-

5.4'

V

VGS" 10V, 10 ' l2A

2N6768

-

5.6"

V

VGS - 10V. 10 - 14A

2N6767

-

0.3

0.4"

2N6768

-

0.2S

0.3"

2N6767

-

-

0.88"

2N6768

-

0.66"

n
n
n
n

ALL

8.0"

11.0

24"

S (UI

2N6768

400

VGS(thl Gate Threshold Voltage
IGSSF
Gate - BodV Leakage Forward

ALL

2.0"

ALL

-

IGSSR

Gate - Body Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

-

ALL

VDS(on) Static Drain-Source On-State

(i)

Voltage

ROS(on) Static Oraln-Source On-State
Resistance

(i)

ROS(onl Static Drain-Source On-State
Resistance

(i)

CD

Test Conditions

VGS -0

Max, Rating,

VGS

-

a

=0, TC = 125°C

VGS - lOY. 10 - 7.7SA
VGS - 10V. 10 • 9.0A
VGS' 10V,I 0 - 7.7SA, TC '12SoC
VGS - 10V. 10 - 9.0A, T C· l2SoC

9fs

Forward Transconductance

Cis,

Input Capacitance

ALL

1000'

2000

3000'

pF

Coss

Output Capacitance

ALL

200"

400

600'

pF

C'SS

Reverse Transfer Capacitance

ALL

50'

100

200"

pF

td (ani

Turn-On Delay Time

ALL

-

-

3S'

ns

VOO "" laOV, 10 • 9.0A. Zo • 4.7n

t,

Rise Time

ALL

-

6S"

ns

(See Figs. 13 and 14)

td (off)

Turn-Off Delay Time

ALL

-

ISO"

ns

(MOSFET sWitch Lng times are essentLally

tf

Fall Time

ALL

7S"

ns

Independent of operating temperature)

-

VOS - ISV. 10 - 9.0A
VGS - O. VOS - 2SV. f - 1.0 MHz
See Fig. 10

--'

THERMAL RESISTANCE
R thJC

Junction-to-Case

R thCS

Case-to-Sink

Mountong su,face fl.t, smooth. and

R thJA

Junctlon-to-Ambient

Free Air OperatLon

g,e::~
~

BODY· DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

Continuous Source Current
(Body Diode)

ISM

Pulsed Source Current
(Body Diode)

VSO

Diode Forward Voltage

t"

Reverse Recovery Time

ORR

Reverse Recovered Charge

*JEOEC regIStered values.

CD

CD Pulse Test:

-

-

-

-

-

-

-

-

12"
14'
20
25
1.6"

0.85'

-

1.7"

V

TC· 2SoC. IS - 14A, VGS· 0

-

1000

-

ns

T J - IS0 0 C. IF - ISM. dlF/dt - 100 A/"s

2S

-

"C

TJ • IS0oC. IF; ISM. dlF/dt - 100 A/"s

2N6767
2N6768
2N6767
2N6768
2N6767

O.S"

2N6768
ALL
ALL

A

Modified MOSFET symbol
shOWing the integral
reverse P-N JunctLon rectLfler.

A
V

TC - 25°C, IS - 12A, VGS-O

4~
----

Pulse Width =s;;;; 300 ",sec, Duty Cycle =s;;;; 2%

Fig. 1 - Clamped Inductive Test Circuit

Fig. 2 - Clamped Inductive Waveforms

VARY tp TO OBTAIN

VGs.R

REQUIRED PEAK IL

DUT

IL+-_ _o-__""--"I>'Io-J
UNITRODE CORPORATION" 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 " TELEX 95·1064

4·131

PRINTED IN U.S.A

2N6767
JAN, JANTX, & JANTXV 2N6768

Fig. 3 - TVpical Output Characteristics

Fig. 4 - TVpical Transfer Characteristics
2

20

I.OV

'0

lO"sflOLSE TEST

vjs '&'~V l - I-

I

r-- 801pULSE ~EST

I
I
f- Vos="V

8

I

1
&tv~ ~ ~

2

8

1
V-

,

6

TJ"+125 0 C

TJ' !Soc,

"-

TJ"&SOC,

')

4

l- t-

7'rJ
1/ JII

2

,.~V_ I-- +--

/. V

3.&V- I-- +-1&0
200
2&0
&0
'00
Vas. DHAIN-TO-SOURCE VOLTAGE (VOLTS)

300

VGS. GATE·TO-SOURCE VOLTAGE (VOLTS)

Fig. 6- TVPical Saturation Characteristics
(2N67681

Fig. 5- TVpical Saturation Characteristics
(2N67671
'0

'0

LpuL,J-

VGS'~V

~'r

_l,.sPU~ET£!T

j

IJ'

4

J
1/

2

,,~

....... ' .• V

!-'"uv

~

V

W

~''f

/I

!J
6

VGs=;,,/:

j,

If'

-r

)

~~
j

3lv

'r

If"

II"

4'°1

,J.
lSI
Vos. DRAIN·lO·SOURCE VOLTAGE (VOL TSI

VDS. DRAIN·TO·SOURCE VOLTAGE (VOLTS)

Fig. 7 - TVPical Transconductance VI. Drain Current

Fig. 8 - Maximum Safe Operating Area

20

!i!i

'6

w

u

i

TJ= ·5SaC

-

j..--"" r

!il
'2

~V

iii

I~

~
Ii

I

l~

~ . / i-"

TJ=2'"C

TJ" +12!,:.

~ J--

V
VOS'" 15V
I

r-- r--

I

I 1 l- r-

If

'PU

'2

ETE

'a. DRAIN CURRENT (AMPERES)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

'6

20

Vos. DRAIN-TO-SOURCE VOl. lAGE (VOL lSI

4·132

PRINTED IN U S.A

2N6767
JAN, JANTX, & JANTXV 2N6768

Fig.9-Normalized Typical On·Resistance V•. Temperature

Fig. 10 - Typical Capacitance V•. Drain·to-Source Voltage
4000

2.2

/

3200

~

"

/
/

~

§" 1600

./

0

o.6

,\

z

L

~

2400

u

4

oS

VG~'O

~

-

..,/

,

800

VGS" IOV
IO=9A

40
120
80
TJ. JUNCTION TEMPERATU RE (DC)

I'-..

.........

~

" t-...

0.2
-40

"'

\ I\,

u'

1/

•

I

f= 1 MHz

C,"

.........

~
""- ,"-C ns
50

10
20
30
40
Vos. DRAIN·TO·SOURCE VOLTAGE (VOLTS)

160

Fig. 12 - Typical Body-Drain Diode Forward Voltage
Fig. 11 - Power V•. Temperature Derating Curve

I!

"-

140

.

'\

z

i'"

80

'"'"

60

/

"t'-,.

~ 100

'\

~

~

~ 40
20

20

40

1

lL

r\.

120

~

ISM. 2N6768

60

80

Is.2N6768

r-- TJ = 1500~C I TJz250C

'"

100

~
r\

120

1.0

140

o
Vso. SOURCE·TO-ORA1N VOLTAGE (VOLTSI

TC. CASE TEMPERATURE (OCI

Fig. 13 - Switching Time Test Circuit

Fig. 14 - Switching Time Waveform.

VGS (MI ---+-~~---~

_.r--.

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Vo
TO SCOPE

INPUT PULSE

FALL TIME

4-133

PRINTED IN USA

POWER MOSFET TRANSISTORS
500 Volt, 0.4 Ohm
N-Channel

FEATURES
,•
•
•
•
•
•

2N6769
J, JTX, JTXV 2N6770

DESCRIPTION

Fast SWitching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability
Qualified to MIL-S-19500/543A

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROSfonf and a high transconductance.
The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

2N6769

450V

0.50

11A

2N6770

500V

0.40

12A

MECHANICAL SPECIFICATIONS
2222(0815)

1013:t~.AX
DfA~~

T

2N6769
JAN, JANTX, & JANTXV 2N6770

TO-204AA (TO-3)

SEATING
PLANE

~~I~~~IO!A-II--

10 161040)MIN

TWO PLACES

TWO PLACES

i-tl0~)6~AX

J

;:I~l~a '~~~+~;==;-r
!
DIA

TWO PLACES

?c~~~~

-.. I!~
I

SOURCE

"\ l!1I1!!!!I'.!.
\

:; i>' ~V

GATE

'"

1)

''''

/I 573 MAX

3040(11911

~

~-$:~====_L

-~ f--B:lgi&~r

--

f--1A1H~:;gI'

1 MEASURED AT SEAT.r.G PLANE

Dimensions in Millimeters and IInches}

11/83

4-134

~UNITRDDE

2N6769
JAN, JANTX, & JANTXV 2N6770
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain - Source Voltage

VOS

2N6769

Drain - Gate Voltage (RGS = 1 MO)

450"

2N6770
500"

450"

500"

V

Units

V

VOGR
10@TC'2SoC

Continuous Drain Current

11"

12"

A

10"TC' l000C

Continuous Drain Current

7.0"

7.7S"

A

10M
VGS

Pulsed Drain Current

20

2S

A

Gate - Source Voltage

%20"

V

PO" TC = 2SoC

Max. Power Dissipation

150" (See Fig. 111

W

PO"TC= l000C

Max. Power Dissipation

60" (See F.g. 111

Line., Derating Factor

1.2" (See Fig. 111
(See Fig. 1 and 21 L = 1 00 ~H
20
I
2S

ILM

Inductive Current. Clamped

TJ

Operating and
Storagl Temperature Range

T"g

Lead Temperatur.

W
W/K

A

-55* to 150-

Oc

300' (0.063 in. (1.6mml from case for 10.)

°C

ELECTRICAL CHARACTERISTICS @ TC = 2SD C (Un)ess otherwise specified)
Perlmettr
·avOSS

Typo

Drain - Source Breakdown Voltage

VGSlth) Gatl Threshold Voltage

2N6769

Min.
450

Typ.

-

Mex.

-

Unit.
V

Tilt Conditions

VGS=O

2N6770

SOO

-

-

V

10-4.0mA

ALL

2.0'

-

4.0"

V

VOS' VGS' 10 = 1 mA

IGSSF
IGSSR

Gate - Body Leakage Forward

ALL

-

-

100'

nA

VGS = 20V

Gate - Body Leakage Reverse

ALL

-

100'

nA

VGS

lOSS

Zero Gate Voltage Drain Current

0.1

1.0'

mA

VOS

=-20V
=0.8 X Max. Raling, VGS' 0

0.2

4.0·

mA

VOS

= Mex. Raling, VGS' 0, TC = 2SoC 10 12SoC

-

6.0'

V
V

2N6770

-

ALL

8.0'

ALL

VOS(on) Static Drain-Source On-Stats
Vol_ (i)

2N6769

ROS(on) Static Drain-Source O"..State
Rllistance

2N6769

2N6770

CD

2N6770

ROS(on) Static Drain-Source On-5tate
Resistance (0
gfs

Forward Transconductance

2N6769

0)

-

6.0"

0.4

O.S"

n

0.3

0.4'

n

VGS

-

1.1"

n

VGS = 10V, 10 = 7.0A, T C = 12SoC

-

0.8B"

n

12.0

24"

S (UI
pF

VGS =10V, 10' 7.0A

= 10V.10 =

7.7SA

VGS = 10V, 10 = 7.7SA, TC = 12SoC
VOS = ISV, 10 = 7.7SA

Ciss

Input Capacitance

ALL

1000"

2000

3000"

Co..
Cm

Output Capacitance

ALL

200"

400

600"

pF

Reverse Transfer Capacitance

ALL

SO"

100

200"

pF

-

-

3S"

n,

-

50"

n.

(See Figs. 13 and 14)

-

ISO"

ns

(MOSFET switching times are essentially

70"

ns

independent of operating temperature.)

KIW
KIW
KIW

Id (on)

Turn-On Delay Time

ALL

I,

Rise Time

ALL

Id (offl

Turn-Off Delay Time

ALL

If

Fall Time

ALL

VGS

=O. VOS = 2SV. f = 1.0 MHz

See F.g. 10
VOO ;"210V, 10 = 7.7SA, Zo = 4.7n

THERMAL RESISTANCE

I RlhJC

I R'hCS
I RlhJA

Junction-to-Case

ALL

-

-

0.B3"

Case-to-Sink

ALL

-

0.1

-

Junction-to-Ambient

ALL

-

-

30

-

-

II"
12'
20
2S
I.S"

Mounting surface flat. smooth. and greased.
Free Air Operation

BODY·DRAIN DIODE RATINGS AND CHARACTERISTICS
2N6769
2N6770
2N6769
2N6770
2N6769

0.7S"

2N6770

O.SO·

-

ALL

-

400

IS

Continuous Source Current
(Body Diode)

ISM

Pulsed Source Current
(Body Diode)

VSO

Diode Forward Voltage

Irr

Reverse Recovery Time

ORR

Reverse Recovered Charge

ALL

• JEOEC registered valull.

CD

(i) Pulse Test:

-

10

A

Modified MOSFET symbol
showing the integral
reverse P·N junction rectifier.

A

~

V

TC=2SoC,IS= lIA,VGS-O

1.6"

V

TC =2SoC, IS= 12A,VGS=0

-

ns

TJ = 150°C, IF • ISM, dlF/dt· 100 A/~.

~C

T J = IS00C, IF • ISM, dlF/dl = 100 AI~,

Pulse Widlh "300 ~sec, Duty Cycle" 2%

Fig. 2 - Clamped Inductive Waveforms

Fig. 1 - Clamped Inductive Test Circuit
VARY tp TO OBTAIN

VGs.R

REQUIRED PEAK

IL

~D~U_T,"r::

..

IL+----- 1010nl

x ROSlon) max., VGS

200·

pF

100·

pF

-

25·

pF

-

15"

ns

Voo

25·

ns

See Fig. 17

25"

ns

20·

ns

(MOSFET switching times are essentially
independent of operating temperature.)

7.5

nC

5.0

=

VGS OV, VOS
See Fig. 10

=25V, f =1.0MHz

=35V, 10 =2.25A, Zo =500

=

=

-

nC

5.0

-

nH

Measu red from the
drain lead. 5mm (0.2
in.) from header to
center of die.

15

-

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

2.0
3.0

ALL

-

ALL

-

=

VGS lOY, 10 8.0A, VOS O.S Max. Rating,
See Fig. IS for test circuit. (Gate charge is essentially
independent of operating temperature.)

nC
Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-to Ambient

Free Air Operation

*Indicates JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-139

PRINTED IN U.S A

II

2N6781

2N6782

SOURCE·DRAlN DIODE RATINGS AND CHARACTERISTICS
Is

Continuous Source Current
(Body Diode)

ALL

-

-

ISM

Pulse Source Current
(Body Diode) <3>

ALL

-

Vso

Diode Forward Voltage (2)

ALL

.7S·

-

trr

Reverse Recovery Time

ALL

Qrr

Reverse Recovered Charge

ALL

ton

Forward Turn·on Time

ALL



.~- r-

~

0.'

1.Ous

..

I

~ .....

'I IJ
/J/

'0

Vas. GATE TO SOURCE VOLTAGE WOl T5)

..,.VGS·'V- ~

~V

2.'

'r~

~

0

~550C

0

/.~~ ~

Q /'"

I"-- 1.1/
TJ" 25 C
I
I"-- II ~
TJ"
I

50

V IV - ~
~

5.•

f--- TJ. t25 DC

48

01

I V

I.'

mill

56

Fig. 3 - Typical Saturation Characteristics

'.0

ROSlon)

16

-

il
/

vos> loton) J(

EH

5~- ~

0.1

r-..!... PUl~1 TIS!

1.2

Ir=

1.4

;

+ Lo.

by max. junction temperature.
see Transient Thermal Impedance Curve (Fig. S).

Fig. 1 - Typical Output Characteristics

c

Ls

<3> Repetitive Rating: Pulse Width limited

·Indicates JEOEC registered values.

10

~

=2S·C, Is =3.SA, VGS =OV
TJ = lS0·C, IF =3.SA, dlF/dt = 100Mps
TJ = lS0·C, IF =3.SA, dlF/dt = 100Mps

Tc

ns

(2) Pulse Test: Pulse width::; 300pS, Duty Cycle::; 2%.

'.0

Modified MOSFET symbol
showing the integral
reverse P·N junction rectifier.

10

20

500

VOS. ORAIN·TO-SOURCE VOLTAGE IVOLTS!

4-140

PRINTED IN

u.s

A

2N6781

2N6782

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration
I

IIII

!iii ~i;

0=05
~

0.2

r-

0.1

--

I

i_

_LJ

~2~

~O.02

1 DUTV FACTOR, 0 =

~

SINGLE PULSE (TRANSIENT

I mERMi" iMPEiAiTI

•

3:flSL

iii ~iiII

l::=0 05

NOTES

*"

2 PER UNIT BASE· R1hJC • 8.33 DEG Ciw
3 TJM ~ Te "POM ZthJC(tJ

I

1"""'"
10.3

10.4

10.2

10.1

1.0

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current
40
3.6

r--J ~s PUJSf1~(Dn);TESl
vias >

Fig. 7 - Tvpical Source·Drain Diode Forward Voltage
10

ROSlon)

,

ma~

3.2

!15

//

2.'

iii
w

2.4

u

z

i
1:

12

D.•
04

o

TJ" l2S oC

IV

I~

Y
o

1--

TJ" 150 0 C

I

"
16

24

32

4.0

4.8

56

64

12

II

80

02

Fig. 8 - Breakdown Voltage Vs. Temperature

u

«

~~

1.05

./

"'!:!

,,"

~;i! 1.00
CO

~~

0.95

!i

0.90

:i

'"i!!
i;

10

12

14

16

18

20

2.50

1.15
1.10

...." .

08

2.25

z

3:

c
c

I
06

Fig. 9 - Normalized On·Resistance Va. Temperature

1.20

z

04

I

VSO. SOURCE TO-CRAIN VOLTAGE (VOLTS)

1.25

c
>

I' 1

I

'0. DRAIN CURRENT lAMPE RES)

'"~

ITJ - 25'C

I

1

DB

I

TJ" 2SoC

/ ,'

16

I

II I

20

g
~

I

TJ = -55°C

. . . .V

"

/'

V

in

V

~
:;:

/'

;"'"

c - 1.00

~

..

c

·20

20

./

g~

O.BO
-40

./

1.15

>-- 1.50
"?o
Zw
o!:!
w~
u< 1.25

0.85

0.15
·60

2.00

40

60

80

100

120

0.50

...... io"'"

.61/

4·141

/'

"

V
VGS -10V
'0= 15A

I

0.25

o

140

TJ• JUNCTION TEMPERATURE (oCl

UN/TROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (7l0) 326-6509 • TELEX 95·1064

0.15

./

-40

/

V

·20

I

20
40
60
80
100
TJ.JUNCTION TEMPERATURE ('C)

120

140

PRINTED IN U.S.A

2N6781

Fig .. 10 - Typical Capacitance VI. Drain·to·Source Voltage
!GIl

2N6782

Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage
20

Jus. 1
0

.au
COo •

li'M~'

in

Coo + Cool. c", SHORTEO

c:>
<:. 15

cIa ,cld
"

.~

~
~

C_.Cdl+c~·+t

3l1li

I

-c",+CooI

zao

u

1110

I I

~

-

Voo =lOV
VD, = SOV ..:::
Veo =SOV

w

to

~

c:>

>

w

10

~

/

:::>
c:>

l\

"
\

c!.

1\ ....... ~

C:"

-

II

C~

/

10
20
3D
4D
Vos. ORAIN·TO.sOURCE VOLTAGE (VOLTS!

'I'
.I~
II"'

I

;;:
---'--~

Fig. 17 - Switching Time Test Circuit
ADJUST Rl
TO OBTAIN

E,

SPECIFIED'D

AL

V,

PULSE
GENERATOR

r-----..,
I
I
I

L_

TO SCOPE

son

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

oI=tI:·5mA

--"'fVv-.....-"VV\,--o ·VDS
IG
CURRENT

SHUNT

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-143

ID
CURRENT
SHUNT

PRINTED IN U S.A

2N6783
2N6784

POWER MOSFET TRANSISTORS
200 Volt, 1.5 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roston, and a high transconductance.

Fast Switch i ng
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

,RDS(on)

ID

2N6783

150V

1.50

2.25A

2N6784

200V

1.50

2.25A

"
:.f

MECHANICAL SPECIFICATIONS

2N6783, 2N6784

TO-205 AD (TO-39)

086 to OM,

,

lilTlfi'Oii'l

:12:' ~088(OOl5}

DRAIN

SOURce

GATE

!'tOB10 2D)

91~111~

~r

825(0325)
OIA

045iOQ18}

I

1422

(0

451101801

l43010169!

------:~,

0361'0)"

18031071)

56}

"'",OSOI

REF

~

053to02l!!;
04110016)
3PLACES

All Dimensions in Mitlimeters and (Inches)

11/83

4-144

~UNITRDDE

2N6783 2N6784
ABSOLUTE MAXIMUM RATINGS
Parameter

2N6783

2N6784

Units

150"

200"

V

Drain - Gate Voltage (RGS = 1MO)  1010n)

20"

Ogd

ls

Vos

-

nH

Voo = 75V, 10 = 1.5A, Zo = 500

VGS = lOV, 10 = 4.5A, Vos = 0.8 Max. Rating,
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

Modified MOSFET
symbol showing the
internal device

inductances.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-to Ambient

Free Air Operation

·'ndlcates JEDEC registered values.

UN)TROOE CORPORATION· 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-145

PRINTED IN

u.s

A

2N6783 2N6784

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Is

Continuous Source Current
(Body Diode)

ALL

-

-

2.25'

A

ISM

Pulse Source Current
(Body Diode) @

ALL

-

-

9

A

1.5"

VSD

Diode Forward Voltage®

ALL

0.7

-

trr

Reverse Recovery Time

ALL

-

290

Qrr

Reverse Recovered Charge

ALL

-

2.0

ton

Forward Turn-on Time

ALL

 '0(on) II ROSl on) max.

~
~

1.0

"z

.."

I

-80t"PUl~ETES~

~

z

/I II

I'---- 'fj

TJ= -55 DC

:! 30

~

~

TJ = •25DC

'0

z

~E

/J /

TJ.toc

r-l .".!.. "1T

40

~

Fig. 2 - Typical Transfer Charact.ristic.

1
9V
8V t--

TJ

@Repet.t.ve Rat.ng: Pulse w.dth IIm.ted
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 1 - Typical Output Characteristics

~~

Tc

pC

*Indicates JEDEC registered values.

4.5

=25'C. IS =2.25A. VGS =OV
=150'C. IF =2.25A. dlF/dt =l00Al/JS
TJ =150'C. IF =2.25A. dlF/dt =l00Al/JS

V
ns

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.

® Pulse Test: Pulse w.dth :;; 300l's. Duty Cycle:;; 2%.

5.0

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

~ .......
~V

20
30
'0
Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

'0

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

6[-

i
_

!...
~5

10ps

'\

1.0

100ps

0.5

1.0ms

0.2
z
~ 0.1
.§ O.OS

5~_

DC=

T, - 150'C MAX.
=
- SINGLE PULSE
2N6783

0.02

.~-

0.01

5.0

I I 1111111
1.0

10

2N6784

11111
20

50

100

III
200

sao

V... DRAIN-TO-SDURCE VOLTAGE (VOLTS)

4-146

PRINTED IN

u.s

A

2N6783 2N6784

Fig. 5 - Maximum Effective Tranlient Thermal Impedance, Junction·to.ca .. Vs. Pul .. Duration

,

•

0'05

NOTES

f-

0.2

f-

0.1

3n.J1..

~Iii

~2~

F=O.OS

1=002

1 DUTY FACTOR, 0" :;

~

SINGLE PULSE (TRANSIENT

2 PER UNIT BASE

·mERMjliMPEnT"

i--"I'

~

RthJC" 833 DEG elW.

3 TJM-TC"'POMlthJC1t)
10.1

10

10

II. SDUARE WAVE PULSE DURATION (SECONQS)

Fig. 6 - Typical Transconductance V,. Drain Current
4.0

3.&

!

Fig. 7 - Typical Sou_·Dr.in Diod. Forward Voltage
10

~~~PU~TE!T
Vas> 'Olonl x RaSlon)

3.2

m.~.

5

! z.8
~
~

L.

,
:i
CI

....
-

~

J
I

2

2.4
TJ II-55°C

0

. /~

1.6

~

TJ I,

1/ . "1-"'1""

1.2

TJ

0

25.t!

1'125'~

Sr-

i ~ 10-

0.8

t--

II'

0.4

o

o

J"TJ"SO'C
TJ. 125'C

j

2

I

1.0

20

'.0

3.0

5.0

1.0
2.0
3.0
4.0
VSD. SOURCE·TO·ORAIN VOLTAGE IVOLTSI

5.0

10. DRAIN CURRENT (AMPERES)

Fig. 8 - Breakdown Voltage VI. Temperature

Fig. 9 - Nosmalized On·Rlliltlnee VI. T_reture

1.25

2.2
5

1/

.." ~

., ~

~

i-""

•

i...,..- ~

V

-40

o

40
10
120
TJ, JUNCTION TEMPERATURE lOCI

UNITROOE CORPORATION' 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

0.2

110

4-147

l/

...... 10"'"

0

\ ....
0.15

V

~

IL

~,..,

"

Vas" lOY

'~'l.jA

o
40
10
120
TJ,JUNCTION TEMPERATURE ",el

110

PRINTED IN U.S.A

2N6783

Fig. 11 - Typal Gate Charge VI Gate-to-8ource Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to-Sourca Voltage
5011

I
I

j

..

~

300

~

I

2011

u'

100

20

JGsoo'
1-1MH,

.l J

V~' 40L.. .

c,. - C.. ~ cto. ~'" SHORTEDC.. -col
C.... Cdl+~
..

400

v., .lDOr . . . . ~ 7

-

-Cds+ t,d

,

Va••

I

\ I ' .......

\

..

,

\

-- 1.

.,

160r2:
/.

C,~

~

/

I

~
C,.

2.

2N6784

-

30

la = 4A
FOR TEST CIRCUIT

I

I

S~E FIG~RE

4

1r

-

10

6

a•. TOTAL GATE CHARGE (nC)

50

Vas. DAAIN·TO-SOURCE VOLTAGE (VOLlSI

Fig. 12 - Typical On-Resistanca Vs. Drain Current

Fig. 13 - Maximum Drain Currenl VI Ca•• Temperalure
2.5

ROSlon) MEASURED WITH CURRENT PULSE Of
DURATION. INITIAL TJ = 250C (HEATING

2.0~1

EFFECT OF 2.0 .. PULSE IS M'j'MAl.i

r- 2.0

3

........ ......

I

IJ

!'.... t'-",.

...........

::E

VGS·1OV

$1.5

~

i
I

~ 1.0

- -~

~

k~ov

.."

"- '\.
~

0.5

\
50

10

75

100

125

150

Te. CASE TEMPERATURE ('C)

'0. DRAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve
2.

"-

"I\..

"r-..."- ,

"'t\.. ,
20

40

60

80

100

120

"

140

Te. CASE TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-148

PRINTED IN U.S.A

2N6783 2N6784

Fig. 15 - Clamped Inductive Test Circuit

•

Fig. 16 - Clamped Inductive Waveforms

VARY lp TO OBTAIN
REQUIRED PEAK Il

VGS =

TO
L

r.r--

OUT

1P

Fig. 17 - Switching Time Test Circuit

Y,
PULSE
GENERATOR

D ur.

r-----.,

I

I
I

L_

5O1l

I

I

___ .J

TO SCOPE

O.OUl

SOn

HIGH FREQUENCY
SHUNT

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

o~·5mA

-.J\N\r-~-J\J"',.-- 1010n) x ROSlon)

max., VGS = 10V

Vos = 15V, 10 = 0.8A
VGS = OV, VOS = 25V, f = 1.0MHz
See Fi~ 10

15-

ns

Voo = 170V, 10 = 0.8A, Zo = 500

ns

See Fig. 17

-

20'
35-

ns

-

30'

ns

(MOSFET switching times are essentially
independent of operating temperature.)

6.0

7.5

nC

3.0

-

nC

3.0

VGS = lOY, 10 = 2.0A, Vos = 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Qg.

Gate-Source Charge

ALL

Qgd

Gate-Drain ("Miller") Charge

ALL

Lo

Internal Drain Inductance

ALL

-

5.0

-

nH

Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

Ls

Internal Source Inductance

ALL

-

15

-

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

nC
Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-to Ambient

Free Air Operation

*Indicates JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-151

PRINTED IN U.S A.

II

2N6785 2N6786

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

Continucus Source Current
(Body Diode)

ALL

-

-

ISM

Pulse Source Current
(Body Diode) I»

ALL

-

VSD

Diode Forward Voltage C2>

ALL

0.6·

-

-

trr

Reverse Recovery Time

ALL

Q..

Reverse Recovered Charge

ALL

ton

Forward Turn-on Time

ALL

1.25·

A

5.5

A

1.4·

V

-

380

pC

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by

..

(2) Pulse Test: Pulse WIdth :5 3OO/ls, Duty Cycle :5 2%.

(j) TJ = 25' to 150'C.

1.16

iii

i
~

.a

..
:

2.20

J~PUL~T£S!

H~.

1.98
116

VGS! 6V

1.54

iii

1.54

~

1.32

~:E

1.32

i:

1.10

-J..v~s ,JmJ
I~(onl
>

110

V TJ: 125',C
VTJ.25'C- I-. / /T; ••55'C

E

5V

0.04
0.22

o
o

100

60

20

Lro

0.22

4~

o

Jj V

0.04

Fig. 3 - Typical Saturation Characteristics
2.20

f--

1.98

-J~'PUL~ETESt

1.78

1.54
1.32

~

..
z 1.10

~

0.81

,

Fig. 4 - Forward Blaa Sal. Operallng Area
10

IW~
7V
9Y

~

"-'e'

8V

~VGS'6V-

o

0.2

.~

0.1

I"

0.01
1.0

10

VOS. DRAIN·TO·SOURCE VOLTAGE IVOL TSI

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

tOms

DC

1v
4

lo,.s

1m

0.02

/

o

::>

1.

~T,-l50'C MAX .
.E 0.05 ~SINGLE PU LSE

5V

r

0.22

0.5

~
a:

,

1.0

...
<>

J

0.04

-

f-

ffi
a:
~
2
$

l/

~ 0.6&

10

VGS. GATE TO SOURCE VOLTAGE (VOL lSI

VDS. DRAIN·TO·SOURCE VOLTAGE IVDLTSI

i8

r

I

mlX~

co 068

co 0.88

E

iii
II:
..
!i~_

I

x ROSlonl

z 0.88

0.88

o

+ LD·

Fig. 2 - Typical Transfer Characteristics

Fig. 1 - Typical Output Charactoristics

1.81

La

I»Repetltlve Ratmg: Pulse WIdth limIted
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

·Indicates JEDEC registered values.

2.20

.aE1

=25'C, Is =1.25A, VPS =OV
TJ =150'C, IF =1.25A, dlF/dt =100A/"s
TJ =150'C, IF =1.25A, dlF/dt =looA/"s

Tc

ns

-

2.7

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

2N6785 2N67

I II ilill
10

II I I
20

50

100 200

500

V... DRAIN·TO-SOURCE VOLTAGE (VOLTS)

4·152

PRINTED IN U.S.A.

2N6785 2N6786

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction·to·Cas. Vs. Pulse Duration

I I
f-D. 0.5

•

m.n
NOTES

~iifi::

f - 0.2
f - 0.1

~2~

F'=.o.05

~O.02

, DUTY FACTOR, 0 "

~

SINGLE PULse (TRANSIENT

2

. mERMjLtPTiTII

....-r-

:~

PER UNITBASE' R,hJC" S.33 DEG. CIW.

3 TJM - TC;; POM ZthJC1tl .

1.0

10

II. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage

3.0

10

r-4"PU!SE
TE!' ROSlon'I
vas>

21

'Olon) II

~ 24

~

2

I

50

mall.

I

§
~

,... V

18

I:

V

~ 0.9

i

06

03

.

rl

~

lit

/ V
~~

V

-I-'""

-

--

...5z
'"'"~

TJ= -55 DC

TJ =

lsoc -

TJ' :25 0 C

z

10

~

-

'"
~

~

'I

o
o

10

05

01

01
022

044 066

088

11

132

154

t 76

198

22

r-r-- I--'
o

TJ;; 150°C
I
TJ"15OC

20

10

'a. DRAIN CURRENT (AMPERES)

3.0

5.0

4.0

VSQ. SOURCE TO-DRAIN VOL rAGE (VOL lSI

Fig. 9 - Normalized On·Resistance Vs. Temperature

Fig. 8 - Breakdown Voltage Vs. Temperature
1.2 5

,

11

~ "

~

5

>

"... i"'"
5

5

,... V

v

i""""

/

V

V

)'

i""""
./

./

,/

-- I--~

5

V

06

;'
0.7 5

-40

vGS
10

=

TOV

10.SA,

01
40
80
120
TJ. JUNCTION TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

160

4-153

-40

40
80
120
TJ. JUNCTION TEMPERATURE (DCI

160

PRINTED IN U.S A.

2N6785 2N6786

Fig. 10 - Typical Capacitance Vs. Drain·to-Source Voltage
250

t~ • t~ + t~. Cd. ~HORT~O

r- C. . . C..
200

150

~

100

20

1

GS +0

f; IMHz

C_.Cdl+~

~
\~

~
lil

J

Fig. 11 - Typical Gate Charge VI. Gate·to·Source Voltage

~+

~C.. +C..

f'!

a

..

~

I

\

50

u

'"

I\.

I'

I

VOS' 320V
10

~

::?

..... ........
i'o..

-

~

>

/

C'"

10
20
30
40
VOS. DRAIN TO SOURCE VOLTAGE IVOLTSI

~

V

I

~

~
fo.-

""- I)j ~

A~

:0

\

\

I

~
>

\

u'

vOS' 200V

~
c

c,..

~

VOS! 80V
15

J

10"' 2A

FOR lEST CIRCUIT
SrFIGrEli

50

0"

4

r--

6

10

TOTAL GATE CHARGE InCI

Fig. 13 - Maximum Drain Current VI. Ca.. Temperature

Fig. 12 - Typical On·Resistance Vs. Drain Current
10

15

v.,
h

VGs,l/

ROSlon! MEASuJEO WIT.'

CURREN~

PULSE OF 2 oloiS DURATION
INITIAL TJ =2Suc (HEATING

-----;

EFFECT OF 2 0 "sPULSE IS MINIMAll

z
co

~

i'-.

:! 09
~

z

'"'"u
:0

z

06

~

/;'

'i'. "'-

.E>
03

V

o

r-....

~

/

-

......

.

I
3

r--....

12

\tGs,..20V_

o

25

15

50

100

"

125

\

,
150

Te. CASE TEMPERATURE IOC)

10. DRAIN CURRENT (AMPERES)

Fig. 14 - Power VI. Temperature Derating Curve
20

""
20

40

"r-...

60

80

",
IOU

""-"r\
120

140

Te. CASE TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-154

PRINTED IN U.S.A

2N6785 2N6786

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit
VARY lp TO OBTAIN
REQUIRED PEAK Il

VGS·R

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR
r-----...,

I
50n
I
I I1
I
I
L _ ___ .1

50n

Fig. 18 - Gate Charge Test Circuit
+Vos
!ISOLATED
SUPPlYI

-

o~,·smA

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-155

'G
C.URRENT

10
CURRENT

SHUNT

SHUNT

PRINTED IN U.S.A

POWER MOSFET TRANSISTORS

2N6787
2N6788

100 Volt, 0.30 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon) and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

2N6787

60V

0.30n

6.0A

2N6788

lOOV

0.30n

6.0A

MECHANICAL SPECIFICATIONS
2N6787, 2N6788

TO-205 AD (TO-39)

50B(020)

045(0018)

03"O~'";r;r;~_..1
\
1422 {D 56)

nro1~

~!~:~~~:

1803(07H
REF

~

OIA

JPLACES

All Dimensions In Millimeters and (Inches)

11/83

4-156

~UNITRDDE

2Np787 2N6788
ABSOLUTE~AXIMUM

RATINGS
Parameter

2N6787

2N6788

Units

VOS

Drain· Source Voltage

60·

100'

V

VOGR
10 @Tc = 25°C

Drain· Gate Voltage (RGS = 1MQ)

60·

100'

V

Continuous Drain Current

6.0·

6.0·

A

10M

Pulsed Drain Current

24

24

A

VGS

Gate· Source Voltage

Po @TC=25°C

Max. Power Dissipation
Linear Derating Factor

ILM

Inductive Current, Clamped

TJ
Tslg

Operating Junction and
Storage Temperature Range

±20·

V

20' (See Fig. 14)

W
W/K

0.16' (See Fig. 14)

I

24

Lead Temperature

(See ~l15 an116) L = 100l'H

I

A

-55 to 150

°C

300(0.063 in. (L6mm) from case for las)'

°C

ELECTRICAL CHARACTERISTICS @ Tc = 25°C (Unless otherwise specified)
Parameter
BVoss

Drain· Source
Breakdown Voltage

VGSlthi

Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

2N6787

60·
100·

-

V

2N6788

V

10 = LamA

ALL

2.0·

-

4.0'

V

VOS - VGS, 10 = LamA

-

IGSS

Gate·Source Leakage Forward

ALL

-

IGSS

Gate·Source Leakage Reverse

ALL

loss

Zero Gate Voltage Drain Current

ALL

-

1010ni

On·State Drain Current

ROSloni

Static Drain·Source
On·State Resistance

ROSloni

Static Drain·Source
On·State Resistance

Test Conditions
VGS = OV

100'

nA

VGS = 20V

-100'

nA

VGS = -20V

1.0'
4.0·

mA

VOS - Max. Rating, VGS = OV

mA

Vos = Max. Rating, VGS = OV, Tc = 125°C

-

A

VOS

ALL

6.0

-

®

ALL

-

-

0.30·

n

VGS = lOV, 10 = 3.5A

®

ALL

-

-

0.54·

n

VGS = lOV, 10 = 3.5A, Tc = 125°C

ALL

-

-

1.80'

V

VGS = lOV, 10 = 6.0A

ALL

1.5·

4.5·

S(o)

VOS = 15V, 10 = 3.5A

ALL

200·

600·

pF

400·

pF

100·

pF

40·

ns

70'

ns

See Fig. 17

40'

ns

70'

ns

(MOSFET switching times are essentially
independent of operating temperature.)

®

-

> 1010ni

x ROSloni max., VGS = 10V

VOSloni

On·State Drain·Source
Voltage ®

g,s

Forward Transconductance

C'ss
Coss

Input Capacitance
Output Capacitance

ALL

100·

CrsB

Reverse Transfer Capacitance

ALL

20·

tdlonl
T,

Turn·On Delay Time

ALL

Rise Time

ALL

tdloffl

Turn·Off Delay Time

ALL

It

Fall Time

ALL

-

-

Qg

T atal Gate Charge
(Gate·Source Plus Gate·Drain)

ALL

-

10

15

nC
nC
nH

Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

®

Qg.

Gate·Source Charge

ALL

-

6.0

Ogd

Gate·Drain ("Miller") Charge

ALL

4.0

Lo

Internal Drain Inductance

ALL

-

5.0

-

Ls

Internal Source Inductance

ALL

-

15

-

nC

VGS = OV, Vos = 25V, f = 1.0MHz
See Fig. 10
Voo = 35V, 10 = 3.5A, Zo = 50n

Voo = 35V, 10 = 2.25A, Zo = 50n
See Fig. 17
(MOSFET switching times are essentially
independent of operating temperature.)
Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

Junction·to·Case

RthJA

Junction·to Ambient

Free Air Operation

*Indicates JEDEC registered values.

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-157

PRINTED IN USA

•

2N6787 2N6788

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS



u

z

~.
E

_'v

I

lOOIs
1.0

::::;}.-I ~:C M X.
o.5 =SINGLE PULSE

I.Omi=

0.2

.v

O. I
1.0

Vos. DRAIN·TO SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

,I

~

50

VGS"V-

~~

]) fY

-55°1"1 'IJ

fI,v

•

Fig. 3 - Typical Saturation Characteristics

.0

TJ.

•

ov-

AI
II,
rl V

Vas> 10(on) x ROSton) max.
TJ','25'j"-..,
TJI·25'~"-..,

vGs"I'-

.0

r-~~,uL~ETEsl-

DC
10

20

2N6787

2N6788

50

100 200

500

Vas. ORA1N·TO-SOURCE VOLTAGE (VOL TSI

4-158

PRINTED IN U.S A

2N6787 2N6788

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case VI. Pulse Duration
t-.

iii

I
I

~

:i

1.0

>'"

tiffi

~~
"'u

0.5

~! 0.2

~~

I I I

NOTES:

iii ~-

O.Z

-~.I

ELrl.
~z~

0.1

i; 0.05 =0J15
.,"

-o.oz

U ...

2",

.Et-

a

J

I. DUTY FACTOR. 0 "

O~I

0.02

'0"

10.5

3. TJM' TC" POM Z'hJCIII.

10-3

5

10-2

-

~

II
II

TJ

l.S50!-== 0:=
I

r/ ... ~ ,....

TJ= 125°C

,

~
;;
t-

~

Vos> 'Olon) I( ROS(on) max.

I

I
1.0

20

VTJ"250C

I

I ,

o

VSD,SOURCE·TD·DRA'N VOLTAGE (VOLTSI

Fig. 9 - Normalized On·Resi_ VI. Tempel'lltUra
2.50

1.20

...

2.25

~

UO

u

1.15

>

Ico 1.10
~S 1.05
......
Ii!:::!

V

1.00

~

"'" "'"

:;:
t;s
"",

5J~ 0.95

L

1.50

00

~~ 1.00

0.15

0.B5

i

0.50

O.BO

~

0.Z5

20
~
60
60 100
TJ.JUNCTION TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

120

140

",.

./

....... V

~~

Z
:
o

·ZO

1/

o~

V

..0

.L

1.75

~':i. 1.25

... V

",'"

0.75
·60

I

~TJ"500C

~

1.25

0.90

II

'II

~

Fig. 8 - Braakdown Voltage VI. Temperature

!~

~

...~

...... ~

~

~

~'fI""

S

12
16
'0. DRAIN CURRENT lAMPE RES)

~:

~

"
'"'"u '0
'"z

IOj,PUlSi TEST

o~

10

1.0

Fig. 7 - Typical Source·Drain Diode Forward Voltage

J ' 2 5 · b 1==

~

/ . . . 1'"

10-1

". SQUARE WAVE PULSE DURATION (SECDNDSI

Fig. 6 - Typical Transconductance VI. Drain Current

. / V'

~

Z. PER UNIT BASE· R,hjC "6.25 OEG. C/W.

SINGLE PULSE ITRANSIENT
THERMAL \M~At~CEI~

0.01

WI

•

0-0.5

",~

"'""'"

VGS"OV

'0" 3A

20

40

i

I

60

au

100

120

I~

TJ, JUNCT'ON TEMPERATURE (OCI

4·159

PRINTED IN U.S.A

2N6787 2N6788

Fig. 10 - Typical Capacitanca Vs. Drain-to-Sourca Voltage
lGOO

I

Cia •

C• • Cds +

&00

~

'r--....

li!
~

§

\

400

r\..

u-

\

200

J

fttMH.'

c. + cid. Cds SHORTED

C,. -Cgd

:!

20

I JosJ

BOO

-- I

Fig. 11 - Typical Gate Charge VI Gate-t<>:Sourca Voltage

c:.~~

-

Vos! 20V
V.. ··50V
Ves' BOV

-

-CdI+CIId

I

c..

........ ......

\

~

I

i
cos

J..

V
6.0

;S
w
u

z

0.6

-

8
12
16
D" TOTAL GATE CHARGE (nC)

...........

"

4.8

I-- VGl'IOV

~

w
u

~

0.4

J

:>

"
~

-

'z"
~

~'

0.2

J

-

--

20

~

.......

.......

"- .........

z

"

-

Fig. 13 - Maximum Drain Current VB CaBe Temperature

0.8

~

I I

50

Fig. 12 - Typical On-Resistance Vs. Drain Current

~

I•• lOA
FOR TEST CIRCUIT
SEE FIGURE 18

I

10
20
30
40
VDS' DRAIN·TD-50URCE VOLTAGE (VOLTS)

"> ~

""

VGS'20V

\

I

-

ROS(on) MEASURED WITH CURRENT PULSE OF 2.0~ DURATION. INITIAL TJ '" 25 0 C. (HEATING

\

EFFECT OF 2.0 IlS PULSE IS MINIMAL)
10

20

o

40

30

50

25

75

100

125

150

Te, CASE TEMPERATURE (OC)

10. DRAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve
20

'\

"

g 15

\.

~

z

"fi·
~
is

ID

'\

~

~

~

'\.

~

I\.
i\

20

UNITRODE CORPORATION - 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

100
40
50
8D
TC, CASE TEMPERATURE I'C)

4-160

120

140

PRINTED IN U.S.A

2N6787 2N6788

Fig. 15 - Clamped Inductive Test Circuit

•

Fig. 16 - Clamped Inductiv. Waveforms

VARY 'p TO OITAI.
REQUIRED PEAK 'L

TO

VGs·tr1'L

OUT

......_...J

'L ....--<)--~

Fig. 17 - Switching Time Test Circuit
ADJUST RL
TO OaTAIN
SPECIFIED 10
Vi

PULSE
GENERATOR

El
RL

r-----'
I
I
I

L_

5011

1

TO SCOPE

_ __ .JI

Fig. 18 - Gate Charge Test Circuit
+VDS

(ISOLATED
SUPPLYI

-

Lnl.SmA

o

-""'rv\,-.....--"VV\,....-o
10
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-161

-VOS

10

":'

CURRENT

SHUNT

PRINTED IN U.S.A.

2N6789
2N6790

POWER MOSFET TRANSISTORS
200 Volt, 0.80 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROSlanl and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature ~tability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high· power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

2N6789

150V

0.80n

3.5A

2N6790

200V

0.80n

3.5A

MECHANICAL SPECIFICATIONS

~~5'~:::::3"

*

DRAIN
GATE

2N6789, 2N6790

TO-205 AD (TO-39)

SOURCE

&08(020)

91~1~~~

~rDiAl
8 2~ (II 32M

(145(0018)

036 lOOt

451(0180)

-~"301(OI69)

F'ii"ii"';;dI...i

J"

1422!O!:!61

I21C
~:~~~~~~:

18031011)
REF

~

DlA

3 PLACES

All Dimensions In Millimeters and (Inches)

11/83

4-162

~UNITRDDE

2N6789 2N6790
ABSOLUTE MAXIMUM RATINGS
Parameter
VOS

Drain· Source Voltage (j)

VOGR

Drain· Gate Voltage (RGS

10@Te

=25°C

2N6790

Units

150'

200'

V

150'

200'

V

3.5'

3.5'

A

14

14

=1MQ) (j)

Continuous Drain Current

10M

Pulsed Drain Current @

VGS

Gate· Source Voltage

Po @ Te

2N67S9

=25°C

A
V

~20'

Max. Power Dissipation

20' (See Fig. 14)

W

Linear Derating Factor

0.16' (See Fig. 14)

W/K

ILM

Inductive Current, Clamped

TJ
Totg

Operating Junction and
Storage Temperature Range

I

14

Lead Temperature

(See Fig. 15 and 16) L
14

j

=lOOIlH J

A

-55 to 150

°C

300(0.063 in. (1.6mm) from case for lOs)'

°C

ELECTRICAL CHARACTERISTICS @ Tc = 25°C (Unless otherwise specified)
Parameter

Type

Min.

Typ.

Max.

2N67S9

150'

-

-

V

10 = 1.0mA

4.0'

V

VOS = VGS, 10

100'

nA

VGS = 20V

BVOSS

Drain· Source
Breakdown Voltage

2N6790

200'

VGSllh)

Gate Threshold Voltage

ALL

2.0'

IGSS

Gate·Source Leakage Forward

ALL

-

IGSS

Gate·Source Leakage Reverse

ALL

-

ALL

-

ALL

3.5

-

ALL

-

ALL

loss

Zero Gate Voltage Drain Current

1010n)

On·State Drain Current

ROSlon)

Static Drain·Source
On·State Resistance

~.

ROSlon)

Static Drain·Source
On·State Resistance

®

®

V

VGS

=OV
= 1.0mA

-100'

nA

VGS = -20V

1.0'

IlA

Vos = Max. Rating, VGS = OV

4.0'

IlA

Vos = Max. Rating, VGS

-

A

VOS

-

O.S·

0

VGS = lOV, 10 = 2.25A

0

VGS = lOV, 10

> 1010n)

=OV, Te

= 125°C

x ROSlon) max., VGS = lOV

-

-

1.5'

ALL

-

-

2.8'

V

VGS = 10V, 10 = 3.5A

ALL

1.5'

4.5'

S(u)

VOS = 15V, 10 - 2.25A

600'

pF

300'

pF

80'

pF

40'

ns

50'

ns

See Fig. 17

50'

ns

(MOSFET switching times are essentially
independent of operating temperature.)

VOSlon)

On·State Drain·Source
Voltage  ID(on) x "OSlon) max.

'I
V1GS:

2

,

i

!

I

Tj-1250C

2-

rT,]'s'c

~

TJ- -55(1C

I

I

I

j'

,

6D

2D

80
Ves, DRAIN TO SOURCE VOL lAGE (VOLlS)

II If

VII
VI

If

-

fIr
I

J.
I

•

I

i

~

=25'C, Is =3.5A, VGS =OV
TJ = l50'C, IF =3.5A, dlF/dt =lOOAll's
TJ =l50'C, IF =3.5A, dlF/dt =lOOAlpS

Tc

ns

®Pulse Test: Pulse width :5 300I'S, Duty Cycle:5 2%.

0

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

~

.J

"J (jJ
~ 'I

10

100
VGs. GATE TO SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Forward Bla. Sale Operating Area
100
50

IO~(
1G1I.!'UlSE

~EST //.,:

J
V

/
I

'If'

/

~
~

~-

::E

20
10

tOps

:$.
I-

Z
W

.........VGS,,5V

,

a:
a:

:::>
<.>

J

'"
:;:
a:
Q

~

.

1.0
0.5

,

,

E!,-15O'C MAX.
~SINGLEPU LSE

tOms
2N6789

0.1

10

,

100ps

0.2
1.0

Vos. DRAIN TO-SOURCE VOLTAGE (VOLTSI

101L

2

5

10

20

50

100

~~
200

500

V.., DRAIN·To-SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4·164

PRINTED IN U.S A

2N6789

2N6790

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

.

2

5

too.

iii-

~

2

f1

El.JL
~2~

f-

l. DUTY FACTOR. 0"

'0.01

i,

:i

2. PER UNIT BASE" RthJC : 6.25 DEG. CIW

iULSE

",M~E,O,~~CEI

'",.

•

NOTES,

3. TJM - TC 'POM ZthJCl,1

1
10-3

10-4

10-2

10-1

1.0

'0

11. SaUARE WAVE PULSE DURATION (SECONDS)

Fig. 7 - Typical Source·Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current

,

•
_ 4
~

TJ

I
/

.......

/'

,

-55 0

~V TJ!I2.,i

!;;

3

,

l !

V

/, /V'

,iI
V

TJ

5

..",. ~

5

f-TJ= 1500 C

,

Y'''!''''ii

4
10. DRAIN CURRENT !AMPERES)

'T

'111
I

I

0

10

TJ"15D OC_

'"

0

vas> 1010n) II ROSlon) mill.

25°C
~

,

-

~

,

TJ= 25°C

VSQ. SOURCE TO-CRAIN VOL rAGE (VOL IS)

Fig. 9 - Normelizad On·Resistance VI. Tamperature

Fig. 8 - Breakdown Volta... VI. Temperatura

,

1.2

2.2

I~

,

'V

/

.,... .... ""
..,;-

.,..

..",.

""""

/

""""

~
~

~

V

V
VGS·'0V

'r'A,

I ....

0.7'

-411

4D

80

120

02

180

4D

so

120

TJ, JUNCTION TEMPERATURE (Oel

TJ. JUNCTION TEMPERATURE tOC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

/

4·165

PRINTED IN USA.

2N6789 2N6790

Fig. 10 - Typical Capacitance V •• Drain·to·Source Voltage

Fig. 11 - Typical Gate Charge vs Gate-to-Source Voltage

1000

20

JUS" J

'-I

,
'." 1 M~'
CIII = C\JI+Cgd,CdsSHORTED~ Cgd

800

em

u

600

\' r--..

z

;:

~

~\

400

\
\

U

200

\

\ "'

r-

V", - 40V
VDS =' 100V
V", = 160V

-

""'Cds+Cgd

,.....

5

-

CIIICgd

COIS = Cds + Cgr; + Cgd

I
CIS>

~ l~

~

,..

,..

~~

II

-::]::

10 = 7A

/

FOR TEST CIRCUIT
SjE FlrE1i

V

c,~

10
10
30
40
Vos. DRAIN TO SOURCE VOLTAGE (VOLTS!

8

50

12

a,. TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On· Resistance Vs. Drain Current

Fig. 13 - Maximum Drain Current

VI

-

16

20

CaBe Temperature

5
5

4
u

z

vGS'" IOV

~

........

~1 0
z

I"'-

"'""l"'-

)

c

5

I..- ~ ~ I--

f'.

v.~
VGS z 20V

~
1

~

20",5 DURATION INITIAL TJ '" 25 0 C (HEATING

EFFECT OF 2.0 itS PULSE IS MINIMAll

0

10
15
10. DRAIN CURRENT (AMPERES)

,

J"...

ROSlon) MEASURED WITH CURRENT PULSE OF

50

25

20

75
100
125
Te. CASE TEMPERATURE (0G)

150

Fig. 14 - Power Vs. Temperature Derating Curve
20

'\

5

l\
1'\

'\

\

'\

5

"

~

20

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

.0
80
100
Te, CMc TEMPERATURE (DC)

40

4-166

120

140

PRINTED IN 'U 5 A

2N6789 2N6790

Fig. 15 - Clamped Inductive Test Circuit

•

Fig. 16 - Clamped Inductive Waveforms

VARY Ip TO 08TAIN
REQUIRED PEAK Il

vGs·R

Fig. 17 - Switching Time Test Circuit

PULSE

GENERATOR
r-----..,
:

I

50u

I

I

L ____ ...J

5011

Fig. 18 - Gate Charge Test Circuit
i-Vos
(ISOLATEO
SUPPLY)

-

O I " : ' J I . l . 5 mA

\r-.....-'V'''''~-o
IG
(.URRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·167

-Vos

10
CURRENT
SHUNT

PRINTED IN U.S A

2N6791
2N6792

POWER MOSFET TRANSISTORS
400 Volt, 1.8 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros•• and a high transconductance.

Fast Switch i ng
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

n.

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Pari Number

Vos

ROS(on)

10

2N6791

350V

1.80

2.0A

2N6792

400V

1.80

2.0A

MECHANICAL SPECIFICATIONS
2N6791, 2N6792

TO·205 AD (TO·39)

Soal02DI

1803(071)

~F
~:~:~~~~\

01A

JPlACES

All Dimensions in Millimeters and (Inches)

11/83

4-168

~UNITRDDE

2N6791

2N6792

ABSOLUTE MAXIMUM RATINGS
Parameter

2N6791

2N6792

Units

350'

400'

V

350'

400'

V

2.0'

2.0'

A

10

10

 1010n)

ROSlonl

Static Drain-Source
On-State Resistance

®

ALL

-

-

1.8'

0

VGS

=10V, 10 = 1.25A

ROSlon)

Static Drain-Source
On-State Resistance

®

ALL

-

-

4.0-

0

VGS

=10V, 10 = 1.25A, Te =125'C

VOSlonl

On-State Drain-Source
Voltage

®

ALL

-

-

3.6-

V

VGS

gl-

Forward Transconductance

ALL

1.0'

3.0-

stU)

Vos

=10V, 10 =2.0A
=15V, 10 =1.25A

®

®

-

Ciss

Input Capacitance

ALL

200·

-

600-

pF

C_

Output Capacitance

ALL

40-

-

200-

pF

Cras

Reverse Transfer Capacitance

ALL

5·

-

40-

pF

tdlonl

Turn-On Delay Time

ALL

T,

Rise Time

ALL

=

x ROSlon) max., VGS ; 10V

VGS OV, VOS
See Fig. 10

=25V, f =1.0MHz

tdloff)

Turn-Off Delay Time

ALL

tl

Fall Time

ALL

-

Qg

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

12

15

nC

6.0

-

nC

6.0

-

nC

5.0

-

nH

Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

15

-

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

Qg.

Gate-Source Charge

ALL

Ogd

Gate-Drain ("Miller") Charge

ALL

Lo

Internal Drain Inductance

ALL

-

Ls

Internal Source Inductance

ALL

-

=500

-

40'

ns

Voo - 35V, 10 - 1.25A, Zo

-

35"

ns

See Fig. 17

-

60-

ns

35'

ns

(MOSFET switching times are essentially
independent of operating temperature.)

=

=

VGS - lOV, 10 5.0A, Vos 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJe

Junction-ta-Case

RthJA

Junction-to Ambient

Free Air Operation

·Indicates JEDEC registered values.

UNITROOE CORPORATION· 5 FORBES ROAO
LEXINGTON, MA 02173 • TEl. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-169

PRINTED IN U.S A

•

2N6791

2N6792

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Is

Continuous Source Current
(Body Diode)

ALL

-

-

20·

A

ISM

Pulse Source Current
(Body Diode)@

ALL

-

-

10

A

Vso

Diode Forward Voltage

ALL

0.6·

-

1.4·

V

Tc = 25·C, Is = 2.0A, VGS = OV

ns

TJ = 150·C, IF = 2.0A, dlF/dt = 100AlJ.lS

pC

TJ = 150·C, IF = 2.0A, dlF/dt = 100Alps

®

trr

Reverse Recovery Time

ALL

Qrr

Reverse Recovered Ch.arge

ALL

ton

Forward Turn-on Time

(j)TJ

.

= 25° to 150 C.

ALL

® Pulse Test: Pulse width

-

-

450

-

3.1

:s 300ps,

Duty Cycle

:s 2%.

@ Repetttive Rating: Pulse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 1 - TYPical Output Characteristics

Fig_ 2 - Typical Transfer Characteri.tic.

')~(

-

~l,v- I-"

I

j

W

VG.·

80p,PUlSETEST

II.

f.ov

!

J

!II

TJ:12!i o

TJ=2S D C

-r

Ir

~rl

Ii
IV

-

l

I.

/I
rl/

lr

ETEs

I I I
I
vos> 10(on) k RoStonl max

1.,v

V

TJ ~ _55°':,:,--

1

v

I
12

16

'" '/I1.1rl
r----~

."VI'

1

20

VGS, GATE TO SOURCE VOLTAGE (VOLTS)

Vas. DRAIN TO SOUItCE VOLTAGE iVOl lS!

Fig. 4 - Forward BI.s Safe Operating Area

Fig. 3 - Typical Saturation Characteristics

lOV

8!llpuJ
I
I

I

J

~

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + Lo·

·'ndicates JEDEC registered values_

~

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

10

60V

"l'O'l",JT- r- r-

,

-

,.lv
~
~

1.0

$

...z

0.5

li!
a:

.'"

0.2

tOps

,

LW

,

lOps

:&

VGS"!i.hv

3

<.:>

2

:iE
a:
Q

•. V

0.1

.E 0.05

1

4'r
100

200

lOOps

"

300

tOm,

E! = 150·C MAX.
SE
~S\NGLE PUL

DP,

0.02
0.01
1.0

Vos, ORA.IN TO SOURCE VOL rAGE iVOl TS)

I

2N6791

II
10

20

50

100 200

2N6792

IIII
500

VD', DRAIN-TO·SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·170

PRINTED IN U.S.A

2N6791

2N6792

Fig. 5 - Maximum Effective Transient Thermal Impedance. Junction-to-Case Vs. Pulse Duration

I

I I

0-0.5
NOTES,

HLSL

0.2

~b.,

~

I
r-0.05

III!~~

~2~

1. DUTY FACTOR. 0 '"

;--0.02
0.01

#

2. PER UNIT BASE = RthJC .. 6.25 OEG. CIW.

i-"'SINGLE PULSE (TRANSIENT
THERMAllMPEOANCEI

3 TJM - TC" POM ZthJC1tl

I
10-3

10-2

1.0

10

tl. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

fr-

1

.ol"uL~ETE1T
I
I
I

vos > 'Olon)II

Fig. 7 - Typical Source-Drain Diode Forward Voltage

I

I

I

1

ROSlon) max

TJ:: 15°C

5
TJ::-550C-

...... ~
~
,/

/ I'"

......

i"""' ....

-

...-j'""
TJ::250C

;;:;:

-

r- TJ~ 125!C- -

..,

,

0

~

I"""

TJ=1500C_

5
-TJ= 150°C

~~

I'

10

I

7
I
I I

1

o

TJ:: 25°C
1

'0, CRAIN CURRENT (AMPERES)

VSO, SOURCE TO DRAIN va LTAGE (VOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalizad On-Resistance Vs. Tamperature

,

11

11

"

~

~
~

11

09

0

z

~

~

V

105

~
~

0

~

,

'V-

........

/

........ ~

I'

V

....... V

/

. / r""

/'

,/

V

08 5

10:

/
01

,
·40

40
TJ JUNCTION

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

80
TEMP~RATURE

110

vGS" IOV

1.25:

01
160

-40

(uCI

4-171

40
80
110
TJ. JUNCTION TEMPERATURE (OC)

160

PRINTED IN U.S.A

•

2N6791
Fig. 11 - Typical Gate Charge V,. Gate·to·Source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
1000

V~S' 0 I

20

.1

1 l,.lMH~

\

""w
u

l\

600

~

U

\
\
\ r-....

~

400

U

200

\

-

"'Cds + Cgd

-

JBOV

~oov

I

C,"

"-

'""" ~

Vas = 320V

A~

~

U/

I

....... r-

-

10

I

C,"
C,"

10 "SA

fOR TEST CIRCUIT

St' "i

V
30

20

EFFECT OF 2.0j.ls PULSE IS MINIMAL.I

VGS"~

-

't

/
JL

.......

2.0

........

.......

16

20

~

""" ......

V

~

" '\

L'

0.5

10

'--

2.5

VGS '" 10V

... ~

'

Fig. 13 - Maximum Drain Current Vs. Case Temperature

Fig. 12 - Typical On-Resistance Vs. Drain Current
ROSlonl MEASURED WITH CURRENT PULSE OF
2.0 ~s DURATiON. INITIAL TJ '" 25°C. (HEATING

UR

12
Og. TOTAL GATE CHARGE InCI

50

40

Vas. DRAIN TO SOURCE VOL TAGE (VOL lSI

1

Vas
VOS'

-

c"Cgd

cO'' " Cgd

toss '" Cds +

z

;!

.1

CIU " C", + ';9'1. Cds ~HOATED_
CBS" Cgd

800

2N6792

o

25

12

,

1\
75

50

to. DRAIN CURRENT (AMPERES)

100

125

150

To. CASE TEMPERATURE (OC)

Fig. 14 - Power Vs. Temperature Derating Curve
20

~ 15

"-'\.
\.

~

z

'\

o

~

iii

10

\

i5

'\.

5

~
~

20

40

60

80

100

120

140

Te. CASE TEMPERATURE (OC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-172

PRINTED IN U.S A

2N6791

Fig. 15 - Clamped Inductive Test Circuit

•

Fig. 16 - Clamped Inductive Waveforms
EC

VARY tp TO OBTAIN
REQUIRED PEAK Il

VGS.R

2N6792

~O~U_T",,-,.....,..
'L+----o---.........- - '
El • 0.5 BVOSS

EC' 0.75 BVOSS

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR

r-----..,

:
I

son

I

I

L ____ ...1

son

Fig. 18 - Gate Charge Test Circuit
+Vos
USOLATED
SUPPLY!

-

o~·5mA

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

--"'fVv-.....-'VV\,.--- 1010n)

loss

Zero Gate Voltage Drain Current

1010n)

On-State Drain Current

ROSlon)

Static Drain-Source
On-State Resistance

®

ALL

-

-

3.0'

0

VGS

=lOV, 10 =l.OA

ROSlon)

Static Drain-Source
On-State Resistance

®

ALL

-

-

6.6"

0

VGS

=10V, 10 =l.OA, Te = 125°C

-

4.5'

V

VGS

=lOV, 10 = L5A

3.0'

S(o)

-

600"

pF

150'

pF

40-

pF

40'

ns

30'

ns

-

60-

ns

-

30'

ns

®

VOSlon)

On-State Drain-Source
Voltage ®

gfs

Forward Transconductance

Ciss

ALL

-

Test Conditions
VGS

ALL

-

ALL

LO"

Input Capacitance

ALL

200'

Coss

Output Capacitance

ALL

30"

Crss

Reverse Transfer Capacitance

ALL

5-

tdlon)

Turn-On Delay Time

ALL

Tr

Rise Time

ALL

®

Vos = 15V, 10

- 125°C

x ROSlon) max., VGS = lOY

=LOA

VGS = OV, Vos = 25V, f
See Fig. 10

tdloffl

Turn-Off Delay Time

ALL

If

Fall Time

ALL

-

Qg

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

11

15

nC

Qg.

Gate-Source Charge

ALL

5

-

nC

Ogd

Gate-Drain ("Miller") Charge

ALL

6

-

nC

Lo

Internal Drain Inductance

ALL

-

5.0

-

nH

Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

Ls

Internal Source Inductance

ALL

-

15

-

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

=LOMHz

=

Voo 225V, 10 = l.OA, Zo = 500
See Fig. 17
(MOSFET switching times are essentially
independent of operating temperature.)

=

VGS = lOV, 10 = 3.0A, VOS 0.8 Max. Rating,
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature
Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RlhJe

Junction-to-Case

RlhJA .

Junction-to Ambient

Free Air Operliltion

*Indicates JEOEC registered values.

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-175

PRINTED IN U.S A

•

2N6793 2N6794
SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

Continuous Source Current
(Body Diode)

ALL

ISM

Pulse Source Current
(Body Diode) Ql

VSD

Diode Forward Voltage ®

trr

Qrr

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

~

-

-

1.5"

ALL

-

A

0.6-

-

6.5

ALL

1.2-

V

TC ; 25'C, IS ; 1.5A, VGS ; OV

Reverse Recovery Time

ALL

TJ; 150'C, IF; 1.5A, dlFldt ; lOOAll's

ALL

-

ns

Reverse Recovered Charge

pC

T J ; 150'C, IF ; 1.5A, dlFldt ; lOOA/l's.

600
3.5

A

-

ALL
Forward Turn-on Time
Intrinsic turn·on time is negligible. Turn·on speed is substantially controlled by LS + LD.
ton
 I~(on) ~ ROS(~n) maxi

1

I/,
/I

I
60V

!

I

sL

TJ: 125°C

r-- - ' ,

I
1

/; 'I

I

l.& ~

45V
40V
100

50

150

250

200

10

Vas. DRAIN TO·SOURCE VOL TAGE (VOLTS)

VGS. GATE TQ·SQURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4 -

P'OV J

-SlJ.lIPU!SETEJ

~".,.,

65V"'" ~

60V-

~

~
::Ii

r-

V

/
J

I

5jv=

vr+·"

i

~

=

-

1.0

tOps

,

1~'

,

~

.EO.OS

=

-

4-176

0.01

tOm

ET
-l50'C MAX.
f=S\NGLE PULSE

OC
2N6793 2N6794

0.02

41V40V=_
20

1

0.2

~ 0.1

12
16
Vas. ORAIN·TO SOURCE VOLTAGE (VOL lS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

_. -

:5. 0.5

If

1

Forward 81a. Safe Operating Ar. .

10

1/

1.

"-,~
C,- "--,~

TJ-.55 0

sL

1

I

TJ - 25°C

1 1
1.0

111111

5 10 20
50 100 200
500
Ves. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

PRINTED IN U.S A

2N6793

2N6794

Fig.5 - Maximum Effective Transient Thermal Impedance. Junction·to·Case VI. Pulse Duration

I
I

•

.-

n = 05
NOTES

-

02
1

-bl
=005

"""
~SINGlE

001

--r

~2~

1 DUTY FACTOR, 0 =

-002

1

HL.lL

Iii11III

THERMAlIMPEOANCE)

..J.-

:!

2. PER UNIT BASE" RthJC = &.25 OEG. C/W.

PULSE (TRANSIENT

3 TJM ~ TC" POM ZthJc(tl .

10.3

2

10-2

10.1

10

10

'I. SQUARE WAVE PULSE DURATION (SECONDSI

Fig. 6 - Typical Transconductance Vs. Drain Current

,

,

.1

,

80 ... 1 PULSE TEST

r-- Vas> 10(onl

ll

RaSlon)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

1
mill

Tj.-5~

~

V

h

1

lC/
/I

",

V
........ ~

V V"""

-

TJ= 2SOC....Tj'250"

TJ = l2!;oC

""'Tj'''OO~=

_TJ=150 0 C

~ .....

=
>
r--.TJ = 250C

III

I

I

I(

10

J
o

10. DRAIN CURRENT IAMPERES)

VSQ. SOURCE TO DRAIN VOLTAGE (VOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temparature
6

125

!ov
r- r- v~S'
IO =1 OA

II

2
5

..,. V
~

b--'"

......

,. ~

J

B

V

V
~

. /V

V

0

./V'

V

5
6

i,.;"
07 5

-40

80
120
TJ, JUNCTION TEMPERATURE lOCI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2

160

-40

40

BO

120

160

TJ. JUNCTION TEMPERATURE (OCI

4-177

PRINTED IN USA

2N6793 2N6794

Fig. 10 - Typical Capacitance Vs. Drain·to-Source Voltage
1Il00

I
VGS '0
I f· 1 MH, I

I
I

C.a =

800

20

I

t .. + tgd. Cds SHORTED -

C.. -C",

u

,y,-

U

\

200

......

t""-..
........ r-

I

5

-

1

1

C'D

.0

,..

10 =3A

FOR TEST CIRCUIT

II

C",-

10
20
30
Vas. DRAIN-lO-SOURCE VOll AGE (VOL IS)

..........
~

~

C'U

sr r l
F1

50

8

r----

E

12

16

20

0,. TOTAL GATE CHARGE 'oCI

Fig. 12 - Typical On·Resistance Vs. Drain Current
9

I

VOS'250V

~OS' ~OOV..........

I
I

l\

§ '00

-

"I--...........-~

Fig. 17 - Switching Time Test CircuIt

PULSE

r-----.,
GENERATOR

I

I
I

L_

50!!

I

I

___ ...J

50!l

Fig. 18 - Gate Charge Test Circuit
+Vos
!ISOLATED
SUPPLY)

-

O~15mA

I.

c.uRRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-179

10

CURRENT
SHUNT

PRINTED IN U.S.A

POWER MOSFET TRANSISTORS

2N6795
2N6796

100 Volt, 0.18 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RosI.nJ and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high· power switching
applications such as switching power supplies, motor controls, and wide·band and
audio amplifiers.

PRODUCT SUMMARY
Pan Number

VDS

RDS(on)

ID

2N6795

60V

0.18n

8.0A

2N6796

100V

0.18n

8.0A

'*"

MECHANICAL SPECIFICATIONS

,

",,0 OJ"

2N6795, 2N6796

TO·205 AD (TO·39)

1172 {DD281

~'~OB8(D0351

DRAIN

SOURCE

GATE

508(020)

914(036)

2:;:325)

045(0018)
03610014)

~r"Al

451101801
430(0169)

L"rFii"ii"'"_...L

I

1422(056)

fffG"fjj"5ij")

1803(011)

~F

","02l,S
If4ilifii1fI
3 PLACES

All Dimensions in Mitlimeters and (Inches)

11/83

4-180

~UNITRDDE

2N6795 2N6796
ABSOLUTE MAXIMUM RATINGS
Parameter
Vos

Drain - Source Voltage (j)

VOGR

Drain - Gate Voltage (RGS

10 @Tc

=25·C

2N6795

2N6796

Units

60·

100·

V

60-

100·

V

8.0·

8-0·

A

32

32

=1Mn) (j)

Continuous Drain Current

@

10M

Pulsed Drain Current

VGS

Gate - Source Voltage

Po@Tc-25'C

Max. Power Dissipation

25· (See Fig. 14)

W

Linear Derating Factor

0.2· (See Fig. 14)

W/K

ILM

Inductive Current, Clamped

TJ
Tstg

Operating Junction and
Storage Temperature Range

A
±20·

L

32

Lead Temperature

V

(See Fig. 15 and 16) L
32

I

= 100llH J

A

-55 to 150

'C

300(0.063 in. (l.6mm) from case for lOs)·

·C

ELECTRICAL CHARACTERISTICS @ Te = 25'C (Unless otherwise specified)
Parameter

Type

Min.

Typ.

Max.

Units

2N6795

60·

-

V

4.0·

V

=OV
10 = l.OmA
VOS =VGS, 10 = l.OmA

BVoss

Drain· Source
Breakdown Voltage

2N6796

100·

VGSlth)

Gate Threshold Voltage

ALL

2.0·

IGSS

Gate-Source Leakage Forward

ALL

-

IGSS

Gate-Source Leakage Reverse

ALL

loss

Zero Gate Voltage Drain Current

ALL

-

10(on)

On-State Drain Current @

ALL

8.0

-

ROSlonl

Static Drain-Source
On-State Resistance @

ALL

-

ROSlonl

Static Drain-Source
On-State Resistance @

ALL

VOSlonl

On-State Drain-Source
Voltage@

ALL

gfs

Forward Transconductance @

ALL

3.0·

Ciss

Input Capacitance

ALL

350·

Coss

Output Capacitance

ALL

150-

Crss

Reverse Transfer Capacitance

ALL

50·

tdlonl

Turn-On Delay Time

ALL

-

T,

Rise Time

ALL

100·

nA

VGS = 20V

-100·

nA

VGS

1.0·

mA

Vos

4.0·

mA

VOS

-

A

VOS

-

0.18·

0

VGS

=-20V
=Max. Rating, VGS =OV
=Max. Rating, VGS =OV, Tc = 125'C
> 1010n) x ROSlonl max., VGS =10V
=10V, 10 =5.0A

-

-

0.35·

0

VGS

=10V, 10 =5.0A, Tc = 125'C

-

-

1.56·

V

VGS

9.0·

S(U)

Vos

=10V, 10 =S.OA
= 15V, 10 - 5.0A

900·

pF

tdloffl

Turn-Off Delay Time

ALL

It

Fall Time

ALL

-

Qg

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

Qg.

Gate-Source Charge

ALL

Ogd

Gate-Drain ("Miller") Charge

ALL

Lo

Internal Drain Inductance

ALL

Ls

Internal Source Inductance

ALL

V

Test Conditions
VGS

-

=25V, f =1.0MHz

500·

pF

150·

pF

-

30·

ns

Voo

75-

ns

See Fig. 17
(MOSFET switching times are essentially
independent of operating temperature.)

40·

ns

-

45-

ns

-

18

30

nC

-

9

-

nC

-

=

VGS OV, VOS
See Fig. 10

-

9
5.0

15

-

nC
nH

nH

=30V, 10 =5.0A, Zo = 150

=

=

=

VGS lOV, 10 18A, VOS 0.8 Max. Rating,
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)
Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

Measured from the
source lead, 5mm (0.2
in_) from header to
source bonding pad.

Modified MOSFET
symbol showing the
internal device

inductances.

$

THERMAL RESISTANCE
R'hJC

Junction-to-Case

R'hJA

Junction-to Ambient

Free Air Operation

*Indicates JEDEC registered values.

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-181

PRINTED IN USA

•

2N6795 2N6796
SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Is

Continuous Source Current
(Body Diode)

ALL

-

-

ISM

Pulse Source Current
(Body Diode) @

ALL

-

Vso

Diode Forward Voltage ®

ALL

0.75·

-

trr

Reverse Recovery Time

ALL

-

300

-

Qrr

Reverse Recovered Charge

ALL

1.5

-

Ion

Forward Turn-on Time

ALL

 iOlonl ~ RaSlan) ..,I.x.

1.

I(

J
J

2

VGS"T= =

r

jV-

I'

~

~

rt

'II
///

TJ-+1250C

=1,TJ.2S C-...... ~h
TJ"tC.0 ~
0

10

20

.y-rso

.

30

10

Vas. QRAIN·TO-SQURCE VOLTAGE (YOLTS)

Fig.

YGS. GATE·TO·SOURCE VOLTAGE (VOLTS)

3 - Typical Saturation Characteristics

Fig. 4 -

Forward Blaa Sale Operating Araa

100
10
IQ,!s'ULSETEST

IOJ

9~~
8V _________ '--."

8

J. ~ '/

~ '/

~ '/

A'/

I~ V
~ ~V

2

~

_sl
f-"""

."

0.'

./

20

/'

$
'"....

if

~('

~~ ./

~V

so

1.2

tOps

1

z

-

~
~

1~

:>
u

~

z

~

1.0

o.s

~ ~\NGl~~~~s~X.

tOms

DC

0.2

1.6

O. 1
1.0

2.0

~6~96

2Nrri
10

20

SO

100

200

SOO

Vas. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

Vas. DRAIN·TO-SDURCE VOLlAGE (VOL TSI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10

-

!!

,GS-',
0.8

1-'

4-182

PRINTED IN U,S,A

2N6795 2N6796

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

I

•

O· 0.5
NOTES

~~.2

K1.JL

1-~.1

~2~

Eo.o5
0.02

T DUTY FACTOR, 0

=

:~

~001

THERMAlIMPEQANCE)

...J...oI""'"

trw.

2 PER UNIT BASE" RthJC"!i 0 DEG.

"-;,NGLE PULSE ITRANSIENT

3 TJM· Te" POM ZthJc(t)

10-3

10-2

10.1

10

1.0

tl,SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source·Drain Diode Forward Voltage

10

......

~

V I---

-

../"/
~

~

i....

TJ"-!iSOC

2

A

z

~'25'~

//

~

B

10

z

TJ= 1250C

~

r--- TJ· 150'C I

U V
vas> lo(on)

II

I
I I

ROS(on) max.

8D(,PUliE TESj
10

I I

10

15

25

20

o

05

10. DRAIN CURRENT (AMPERES)

Fig. 8 - Breakdown Voltage Vs. Temperature

~

10

20

3.0

25

VSQ. SOURCE·TO DRAIN VOLTAGE (VOL IS)

Fig. 9 - Normalized On·Resistance VI. Temperature

1.25
w

TJ" 2S OC

1

r'''
V

/'

250

1.20

u
«

225

z
115

v

>

.....V

In

~

~ffi

0'"
u«
w~

....... V"

g~

~z

~z

~

~
075
·60

-40

-20

20

40

60

80

100

120

150

v

...... , /

125
100
0.15
050

1--

--

...... V

.......V

VGS'10VI

I

-

'0l<4A

0.25

o

140

-60

TJ,JUNCTION TEMPERATURE (OCI

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

175

!.;:

...... V

....... V"

2.00

-40

-20

20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE (DCI

4-183

PRINTED IN U.S A

2N6795 2N6796

Fig. 10 - Typical Capacitance VI. Drain·to·Source Voltage

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage
20

2000

1 tG,· !
I

~I

1200

v.. - 'lOV

I

os

I
I
V.. ·50V

r-- r--

I

gd

.h:

J

I

C'SS

,...

\

10

lJ Ir

~V

I

1\ i'-..

I

V.. = 80V

-

cCgs+~gd

==Cds+ Cgd

\

400

Cds +

=

g
§ 800 ~~
U

I

I MK,

era .. Cgd
Coss

:

,.

CIa '" Cgs+ Cgd. Cds SHORTED _

1600

II

10·8A
FOR TEST CIRCUIT
SEE FIGURE 18

/

C!.
c~ss

~

V
30

20

40

1

\6
24
Og. TOTAL GATE CHARGE ('lei

Vos. DRAIN TO SOURCE VOLTAGE (VOLTS)

-

~

32

40

Fig. 13 - Maximum Drain Current V•. Case Temperature

Fig. 12 - Typical On·Resistance Vs. Drain Current

10
0.6

I

RO'(~"6 MEA,JREO WITJ~ CURREN~ PULSE dF

20

05

u

jA

URATION INITIAL TJ "25°C (HEATING

I-- EFFECT OF

2

0,"

PULSE IS MINIMAll

-

l""""'-

z

~
~

04

v~s

z

o
w
u

Z

......

= 10V

b-

r-....

03

=>
o

~
~

I'-...

""'",

)

02

V

1

r\

r

V

10

1\

)

·20V

20
40
30
'D. DRAIN CURRENT (AMPERES)

o

50

50

25

60

75

125

100

Te. CASE TEMPERATURE

150

~DC)

Fig. 14 - Power Vs. Temperature Derating Curve
0
5

0

5

.........

0

~

"'" t'..

5
0

\

20

40

60

'" "' "

80

100

120

r-....

140

Te. CASE TEMPERATU RE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·184

PRINTED IN U.S.A.

2N6795 2N6796

Fig. 15 - Clamped Inductive Test Circuit

•

Fig. 16 - Clamped Inductive Waveforms

VARY" TO OBTAIN

i5

E.' "oUT

VGS"!r"L

Fig. 17 - Switching Time Test Circuit
ADJUST AL TO OBTAIN
SPECIFIED 10

V,
PULSE
GENERATOR

r-----'

I

I
I

L_

-''''---~TO

5001

___ .JI

SCOPE

500

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPl VI

-

O~·5mA

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-185

IG

10

CURRENT
SHUNT

CURRENT
SHUNT

PRINTED IN U.S A

POWER MOSFET TRANSISTORS

2N6797
2N6798

200 Volt, 0.4 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RD5(on)

ID

2N6797

150V

0.40

5.5A

2N6798

200V

0.40

5.5A

MECHANICAL SPECIFICATIONS
2N6797, 2N6798

TO·205 AD (TO·39)

!i08(0201

~:~:~~~:

DIll.

JPlACES

All Dimensions In Millimeters and (Inches)

11/83

4-186

~UNITRDDE

2N6797 2N6798
ABSOLUTE MAXIMUM RATINGS
Parameter

2N6797

2N6798

Units

150·

200·

V

150·

200·

V

Continuous Drain Current

5.5·

5.5·

A

10M

Pulsed Drain Current @

22

22

VGS

Gate - Sou rce Voltage

VOS

Drain - Source Voltage

VOGR

Drain - Gate Voltage (RGS

10 @Tc

Po @Tc

=25'C
=25'C

(j)

= lMO) (j)

A
±20·

V

Max. Power Dissipation

25" (See Fig. 14)

W

Linear Derating Factor

0.2· (See Fig. 14)

W/K

ILM

Inductive Current, Clamped

TJ
Tstg

Operating Junction and
Storage Temperature Range

I

22

Lead Temperature

(See Fig. 15 and 16) L
22
I

= 100pH I

A

-55 to 150

'C

300(0.063 in. (1.6mm) from case for lOs)

'C

ELECTRICAL CHARACTERISTICS @ Tc = 2S'C (Unless otherwise specified)
Type

Min.

Typ.

Max.

Units

2N6797

150·

-

-

V

2N6798

200·

ALL

2.0·

Gate-Source Leakage Forward

ALL

Gate-Source Leakage Reverse

ALL

-

Parameter
BVoss

Drain - Source
Breakdown Voltage

VGSlth)

Gate Threshold Voltage

'GSS
'GSS

Test Conditions
VGS

=OV

-

-

V

10

-

4.0"

V

Vos - VGS, 10

100·

nA

VGS

-100·

nA

VGS

1.0·

rnA

Vos - Max. Rating, VGS

4.0·

rnA

Vos - Max. Rating, VGS

-

=LOrnA
=LOrnA

=20V
=-20V

loSS

Zero Gate Voltage Drain Current

ALL

5.5

-

-

A

VOS

> 1010n)

-

-

0.4·

0

VGS

=10V, '0 =3.5A

-

0.75·

0

VGS

=lOV, '0 =3.5A, TC = 125'C

-

2.2·

V

VGS

7.5"

S(U)

=10V, '0 =5.5A
=3.5A

'Olon)

On-State Drain Current ®

ALL

ROSlon)

Static Drain-Source
On-State Resistance

®

ALL

ROSlon)

Static Drain-Source
On-State Resistance

®

ALL

VOSlon)

On-State Drain-Source
Voltage

®

ALL

-

gls

Forward Transconductance ®

ALL

2.5'

Ciss

Input Capacitance

ALL

350'

COBS

Output Capacitance

ALL

100'

C,ss

Reverse Transfer Capacitance

ALL

40·

tdlon)

Turn-On Delay Time

ALL

T,

Rise Time

ALL

-

900·

pF

450·

pF

150"

pF

x ROSlon)

=OV
=OV, TC = 125'C
max., VGS = lOV

VOS - 15V, 10

=

VGS OV, VOS
See Fig. 10

=25V, f =1.0MHz

=77V, 10 =3.5A, Zo = 150

tdloffl

Turn-Off Delay Time

ALL

tl

Fall Time

ALL

-

Qg

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

19

30

nC

Qg.

Gate-Source Charge

ALL

10

-

nC

Ogd

Gate-Drain ("Millen Charge

ALL

9

-

nC

Lo

Internal Drain Inductance

ALL

-

5.0

-

nH

Measu red from the
drain lead. 5mm (0.2
in.) from header to
center of die.

Ls

Internal Source 'nductance

ALL

-

15

-

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

30·

ns

Voo

-

50·

ns

See Fig. 17

-

50'

ns

40·

ns

(MOSFET switching times are essentially
independent of operating temperature.)

=

=

=

VGS lOV, 10 llA, VOS 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-to Ambient

Free Air Operation

*Indicates JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
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TWX (710) 326-6509 • TELEX 95-1064

4-187

PRINTED IN USA

•

2N6797 2N6798

SOURCE·DRAIN DIDDE RATINGS AND CHARACTERISTICS
IS

Continuous Source Current
(Body Diode)

ALL

-

-

5.5·

A

ISM

Pulse Source Current
(Body Diode) @

ALL

-

-

22

A

Vso

Diode Forward Voltage @

ALL

0.75·

-

1.5·

V

t"

Reverse Recovery Time

ALL

TJ = 150'C, IF = 5.5A, dlF/dt = lOOA/lls

Reverse Recovered Charge

ALL

-

ns

Q"

IIC

TJ = 150'C, IF = 5.5A, dlF/dt = 100A/1/5

ton

Forward Turn-on Time

ALL

(j)TJ = 25' to 150'C.

-

450
3.0

@Repetltlve Rating: Pulse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

*Indicates JEOEC registered values.

Fig. 2 - Typical Transfer Characteristics

Fig. 1 - Typical Output Characteristics

16

,

IOH'v

,.

80 ",P\JLS£ TEST

7V ...,.....

V'

VGS"6V

-

,

80"sPULSETEST
I
r- Vo~>10(on)'X ROSlon) max

- -

5V-

60

TJ"-55(1C

......

80

V

J
250C i'-..
~ ~I
'-- fl11

2

rJ/
k2 V

.v- I-40

III

II,
B
I

TJ-+125 0C

T~ =

20

~

Te = 25'C, Is = 5.5A, VGS = OV

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo.

@)Pulse Test: Pulse width,,; 3001/5, Duty Cycle"; 2%.

20

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

..

,

Vos. DRAIN TO SOURCE VOLTAGE (VOLTS}

Vas. GATE TO SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characte.istics

Fig. 4 - Forward Bla. Sals Operating Area

100
10

A~

- JOl'Spuls£TE!r

~

,.

I~

f/

A- t--

50

'11 ~ ~....)ov
.v_ I-~I< ,'-- . . . . . iv~v- r"----~
J~

'I

-

20

ill
0::

Ie
s

-

~

~
=>
'"

1.01'8
101'8

0::

~

co
~

jV

-

-

...

I--- VGS '" sv-

J

r"

10

-

1.0

lOllI'S

=:! -lSO'C MAX.

0.5 =S\NGLEPU LSE

tOms

02
2 Iml

0.1
1.0

Yas. DRAIN·TO SOURCE VOLTAGI:. (VOL lS)

2

10

20

50

100

2N~
DCI
200

500

V.., DRAIN·TO-SOURCE VOLTAGE (VOLTS)

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
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4-188

PRINTED IN U.S.A

2N6797 2N6,98

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to.case Vs. Pulse Duration

...z

I

i!

L
~~

wi;

>=>

;: '"
~~

°

0-0.5
NOTES'

.5

~i 0.2

:>1::

i!
"'~
,,'"

JE

1
..

ffi.JL

-h.2
-0.1

0.1

~2~

:::::0.05

~= 0.05

"

•

10

0~2

1. DUTY FACTOR. 0 = :;

-0.01

0.01
10-5

2 PER UNIT BASE = RthJC '" 5 0 DEG. crw.

"S,NGLE PULSE ITRANSIENT
THERMAL IMPEDANCE)

0.02

.J....+-""

3. TJM - TC" POM ZtlucCtI .

10-3

10"

10-2

5

10.1

1.0

10

I1.SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source·Drain Diode Forward Voltage

10

~

10 2
TJ =25 0C

~

'"
:>

...z

....

TJ ~ -S50e

./" ~

-

V ......- r""'"'

h

,>":. ..~

III

TJ= 25°C

"
~

L

u

z

TJ

~

1250C

'TJ= ISOoC

//

10

..

TJ= ISOoC

..

>

"1

~

Vas> 10(onll( ROSlon) mIx.

.."

I

II TJ=L

5OC

8(J.u,PUlSETEST

10
10

o

10. DRAIN CURRENT (AMPERES)

VSQ. SOU fleE TO-DRAIN VOLTAGE (VOL lSI

Fig. 9 - Normalized On·Resistance Vs. Temperature

Fig. 8 - Breakdown Voltage Vs. Temperature

,

12

2.2

~

11

,

~/

u

>

.".

V

......./

"

.......

~

....... ~

~

/

1.B

~s

~

ww
~~

1.4

~

~:
,,'"
~~ 1.0

/

~
i

~

40

80

120

160

0.2

,;

./~

V
VGS"OV

'r

o

~

3A

1

~

TJ. JUNCTION TEMPERATURE C'CI

TJ. JUNCTION TEMPERATURE (DC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

0.6

/

/

4·189

1m

'"

PRINTED IN U S.A

2N6797 2N6798

Fig. 10 - Typical Capacitance Vs. Drain·to-Source Voltage
2000

I

I I

I

"I'MH'I

VDS = 40V

Cia

,,' ..

u:

1200

U

l'

800

1\

u
400

\

"'

-"'-

--

~

J

5

,,,

V", = 100V

..1 I "
VDS= 60VI~

t--

=-=Cds + Cgd

;!

::5

20

"c. + ~gd. Cds SHORTE~ 1-era '= Cgd
I-COSI",Cds+ CCIII~pd

'600

~

V~S '0

Fig. 11 - Typical Gate Charge VI Gate.to-Source Voltage

I

r

0

,.

~~U

A

C,a

I

5

.1
~
c,u

40
20
30
Vas. DRAIN TO SOURCE VOLTAGE (VOL IS)

0

50

10

Fig. 12 - Typical On-Resistance V,. Drain (:urrent

ID = llA
FOR TEST CIRCUIT
SEj FIGUIRE 18

1
V

1

16
24
32
C" TOTAL GATE CHARGE (nC)

40

Fig. 13 - Maximum Drain Current VI Case Temperatura

8

6.0
1

r.....

vGS -" IOV

8

6

I 'J"'oo,
~
.......

6
4

/

-

......-:
2

-

..--

I-"

4

VGS= 20V

r-- ROSlool MEASUREO WITH CURRENT

J
puel,

'" f'..

~

I\.
1\

I. 2

\

OF

2 D/Js DURATION INITIAL TJ -" 2SoC (HEATING

EFFECT OF lOps PULSE IS MINIMAL)

,0

30

20

0
25

40

50

75
100
125
To, CASE TEMPERATURE ('C)

10. DRAIN CURRENT (AMPERES)

150

Fig. 14 - Power Vs. Temperature Derating Curve
0
5
0
5

"I"-

0

5

.......

,
~

0
5

20

40

60

80

'"

100

120

........

~
140

Te. CASE TEMPFRATURE (OC)

UNITROOE CORPORATION· 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-190

PRINTED IN U.S.A.

2N6797 2N6798

Fig. 15 - Clamped Inductive Test Circuit

•

Fig. 16 - Clamped Inductive Waveforms

VARY Ip TO OBTAIN
REQUIRED PEAK IL

VGS·R

Fig. 17 - Switching Time Test Circuit

v,

_..r--

Vo

P

ro SCOPE

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

O~15mA

IG
CURRENT
SHUNT

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

I.

--'\I"".r--t-~'VII'It-o -VOS

4-191

CURRENT
SHUNT

PRINTED IN U.S.A

2N6799
2N6800

POWER MOSFET TRANSISTORS
400 Volt, 1.0 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RDslon. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

ID

2N6799

350V

3.0A

2N6800

400V

LOn
Lon

3.0A

MECHANICAL SPECIFICATIONS
2N6799, 2N6800

TO-205 AD (TO-39)

508((120)

9~:;:::~1

04!H0018)

036W0141

~r"Al

451!OI80!
430101691

.L"ii"iii"ii'"'.~

I

1422(056)
1210(050)

~!~:~~~~:

1803(011)

~F

DIA

3 PLACES

All Dimensions in Millimeters and (Inches)

11/83

4-192

~UNITRODE

2N6799

2N6800

ABSOLUTE MAXIMUM RATINGS
2N6799

2N6800

Units

VOS

Drain· Source Voltage Q)

Parameter

350'

400'

V

VOGR
10@To=25'C

Drain· Gate Voltage (RGS = IMQ) Q)

350'

400'

V

Continuous Drain Current

3.0'

3.0'

A

10M

Pulsed Drain Current

14

14

A

VGS

Gate· Source Voltage

Po @To = 25'C

Max. Power Dissipation

ILM

Inductive Current, Clamped

TJ

Operating Junction and
Storage Temperature Range

®

Linear Derating Factor

Tstg

±20'

V

25' (See Fig. 14)

W
W/K

0.20' (See Fig. 14)

I

14

Lead Temperature

(See Fig. 15 and 16) L = 100llH
14

I

I

A

-55 to 150

'C

300(0.063 in. (1.6mm) from case for lOs)'

'C

ELECTRICAL CHARACTERISTICS @ Te = 2S'C (Unless otherwise specified)
Parameter
BVoss

Drain· Source
Breakdown Voltage

Type

Min.

Typ.

Max.

Units

2N6799

350'
400'

-

V

2N6800

V

10 = LOrnA

ALL

2.0'

4.0'

V

Vos = VGS, 10 = LOrnA

-

-

VGSlthl

Gate Threshold Voltage

IGSS

Gate·Source Leakage Forward

ALL

IGSS

Gate·Source Leakage Reverse

ALL

-

Test Cond itions
VGS = OV

100'

nA

VGS = 20V

-100'

nA

VGS = -20V

1.0'

rnA

VOS - Max. Rating, VGS = OV

4.0'

rnA

Vos = Max. Rating, VGS = OV, TO = 125'C

-

A

Vos

losS

Zero Gate Voltage Drain Current

ALL

-

1010ni

On·State Drain Current ®

ALL

3.0

-

ROSlonl

Static Drain·Source
On·State Resistance ®

ALL

-

-

1.0'

a

VGS = lOV, 10 = 2.0A

ROSlonl

Static Drain-Source
On·State Resistance ®

ALL

-

-

2.4'

a

VGS = lOV, 10 = 2.0A, To = 125'C

VOSlonl

On·State Drain·Source
Voltage ®

ALL

-

-

3.0'

V

VGS = lOV, 10 = 3.0A

gls

Forward Transconductance ®

ALL

2.0'

6.0'

S(U)

VOS = 15V, 10 = 2.0A

Ci8S

Input Capacitance

ALL

350'

900'

pF

300'

pF

80'

pF

30'

ns

35'
55-

ns

35-

ns

Coss

Output Capacitance

ALL

50'

CIS.

Reverse Transfer Capacitance

ALL

20'

tdlon)
T,

Turn·On Delay Time

ALL

-

Rise Time

ALL

-

-

-

> 1010n) x ROSlon)

VGS = OV, Vos = 25V, f = LOMHz
See Fig. 10

Idloffl

Turn·Off Delay Time

ALL

tl

Fall Time

ALL

-

-

Qg

Total Gate Charge
(Gate·Source Plus Gate·Drain)

ALL

-

18

30

nC

Qg.

Gate·Source Charge

ALL

-

nC

Ogd

Gate·Drain ("Miller") Charge

ALL

7

-

nC

Lo

Internal Drain Inductance

ALL

-

11
5.0

-

nH

Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

La

Internal Source Inductance

ALL

-

15

-

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

ns

max., VGS = 10V

Voo = 176V, 10 = 2.0A, Zo = 150
See Fig. 17
(MOSFET switching times are essentially
independent of operating temperature.)
VGS = lOV, 10 = 6.0A, Vos = 0.8 Max. Rating.
See Fig. 18 for test circui!. (Gate charge is essentially
independent of operating temperature.)

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJO

Junction·to·Case

RthJA

Junction·to Ambient

Free Air Operation

*Indicates JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-193

PRINTED IN U.S.A

•

2N6799 2N6800

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
15

Continuous Source Current
(Body Diode)

ALL

-

-

3.0"

A

15M

Pulse Source Current
(Body Diode) @

All

-

-

14

A

VSD

Diode Forward Voltage ~

Atl

0.7"

-

1.4'

V

-

pC

t"

Reverse Recovery Time

All

-

600

Qrr

Reverse Recovered Charge

All

-

4.0

Ion

Forward Turn·on Time

.

 10(onl II RDS(onl mu:.

1

,

~

TC = 25'C. 15

45V- I--

,j'
I

If

0.02 t=~+++rn1t=~+++rn1p2N~679II~~2~N6800~

40V- I--

,

11wI
0.01 L...J....l.-LLJ..LLLIL.l...L..L.LWlllL.JLL...llJ..L1.U
1.0
10
20
50 100 200 500

\0

Vas. DRAIN TO SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

VOS. DRAIN·TO·SOURCE VOLTAGE (VOLTSI

4·194

PRINTED IN U.S.A.

2N6799 2N6800

Fig. 5 - Maximum Effective Tranlient Thermal Impedance, Junction-to.c.se VI. Pulse Duration

~

!~E
wz

I

:t~
5:~ 0.2

~i
a-

..

~

J~

N~

f-~.2

•

f-~.I

O. I EO~5

C><
2.10.05

==

•

1.0

>=>
;:: .. 0 0-0.5
~~ .5

f - 0.02
0.01

~

mIL
~2-l

I. OUTYFACTOR. D'

~INGLE PULSE ~U~~I~NT

0.02
0.01
10-5

• i!!

NOTES:

iii"

THERMAL IMPEDANCE)

~

3. TJM - TC• Pou Z""C(',·

10-3

10-4

:~

2. PER UNIT BASE' R'hJC' U OEG. CIW.

2
5
10-2
2
5
10-1
'I.SQUARE WAVE PULSE DURATION (SECONOSI

Fig. 6 - Typical Transconductance Vs. Drain Current

10

1.8

Fig. 7 - Typical Source-Drain Diode Forward Voltage

'0

I
TJ '" 25 DC

/.

lfiV

II V
II'

.......

,

t:::..

----

t.TJ~-S50C-

........ TJ'" ISOOC

./

TJ: 25 0 C

-

//

T,i'12,t.",
I

TJ: ISOOC

"1

I

vos> IOton). Roiton) mla.

I I

!801'IP[LSf TEST

'0

10

TJ' f5 0C

o

10. DRAIN CURRENT (AMPERES)

Vso. SOURCE TO DRAIN VOLTAGE (VOL lS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance VI. Temperature

.lI

2

,.. V
,/

--

i--""'

,,-

--

~

f'

V
V
~

V

/

,/

g

~

,/
0.6

;'
Oil

-40

40
80
120
TJ JUNCTION TEMPERATURE IOC)

UNITRODE CORPORATION, 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

0.2
'60

4-195

-40

VGS '10V
10 i2.OAI

40
80
120
TJ. JUNCTION TEMPERATURE (OCI

160

PRINTED IN U.S.A

2N6799

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
1000

1

1600

I

.1

MHl
I

0
1 .

clSS ; cgs'" CgeI. Cds SHO RTEO

-

ens"

-

Cgd

C"Cgd

~

Coa=.Cds+Cp+Cgd

1200

::

§" 800
u'

400

Fig. 11 - Typical Gate Charge VI. Gate·to·Source Voltage

~GS ,J
t=,

)OS'
5

Vas = J20V

CISS

~ H;

-

~

0

rs..

5

~

81v,,--

V,oS'2~V,

-

"=Cds"" Cgd

~

- f-A

/

10

40

30

(II'

~ 14
FOR TEST CIRCUIT

10

sr F'iuRE Ii
16

50

Vas. ORAIN TO SOURCE VOL rAGE (VOL IS)

24

40

32

01). TOTAL GATE CHARGE (IlC)

Fig. 12 - Typical· On-Resistance Vs. Drain Current

u

,.

~

~,-

1

10

2N6800

Fig. 13 - Maximum Drain Current VI. Case Temperature

VGS,'0':/.

z

'"
~

~

.IVGS'10V_

2

/

z

o
u

~

"
o

~
z

~

I

-

V

......

.........
.........

V

.........

i'-

1
ROS(an) MEASURED WITH CURRENT PULSE OF
2 OJ.,lS DURATION INITIAL TJ 2S oC (HEATING
EFFECT OF 2 0 /-IS PULSE IS MINIMAL)
'0

10

15

10

15

30

75

50

100

'"

125

\
150

'a. DRAIN CURRENT (AMPERES)

'0- DRAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve
40
35

5

30

z

25

~

10

~

0

ill
;5

..........

,
"

~

~

~

15

r-.......

0.-

10

10

40

60

80

'" '""

100

120

140

Te. CASE TEMPERATURE (DC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·196

PRINTED IN U S.A.

2N6799 2N6800

EC

VARY Ip TO OBTAIN

VG,.R

•

FiO. 16 - aamped Inducti •• W."eforml

Fig. 15 - Clamped Inducti •• Test Circuit

REQUIRED PEAK 'L
OUT

'L+---6---...."""',.,....-'
e, ~ 0,5 BVoss EC "0.75 BVoss

Fig. 17 - Switching Tima T.st Circuit

PRF::lkHl

v.

Vi

_..r---' TO SCOPE

Fig. 18 - Gata Chlrga Test Circuit
+Vos
(ISOLATED
SUPPLY!

-

o~·5mA

--'\IV\r'~-'V'''''- 101on)

ROSlonl

Static Drain-Source
On-State Resistance ®

ALL

-

-

1.5"

0

VGS

=10V, 10 = 1.5A, Te =25'C

ROSlonl

Static Drain-Source
On-State Resistance ®

ALL

-

0

VGS

=lOV, 10 = 1.5A, Te = 125'C

VOSlonl

ALL

-

-

3.5"

On-State Drain-Source
Voltage®

3.75'

V

VGS =.10V, 10 = 2.5A

gf.

Forward Transconductance ®

ALL

1.5'

Ciss

Input Capacitance

ALL

350'

-

COBS

Output Capacitance

ALL

25'

Cras

Reverse Transfer Capacitance

ALL

15'

tdlonl

Turn-On Delay Time

ALL

-

T,

Rise Time

ALL

-

tdloff)

Turn-Off Delay Time

ALL

-

-

-

4.5'

S(U)

900'

pF

200'

pF

60'

pF

30'

ns

30'

ns

55"

ns

tf

Fall Time

ALL

-

-

30'

ns

Qg

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

22

30

nC

X

ROSlonl max., VGS = lOV

Vos

=15V, 10 =1.5A

VGS

=OV, VOS =25V, f =1.0MHz

Voo

=225V, 10 =1.5A, Zo = 150

S~e Fig. 10

See Fig. 17

(MOSFET switching times are essentially
independent of operating temperature.)

=

=

Qg.

Gate-Source Charge

ALL

Ogd

Gate-Drain ("Miller") Charge

ALL

-

11
11

Lo

Internal Drain Inductance

ALL

-

-

5.0

-

nH

Measured from the
drain lead. 5mm (0.2
in.) from header to
center of die.

Ls

Internal Source Inductance

ALL

-

15

-

nH

Measured from the
source lead, 5mm (0.2
in.) from header to
source bonding pad.

nC

=

VGS lOV, 10 6.0A, VOS 0.8 Max. Rating,
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

nC
Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJe

Junction-te-Case

RthJA

Junction-to Ambient

Free Air Operation

*Indicates JEDEC registered values.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-199

PRINTED IN U.S A

•

2N6801

IS

Continuous Source Current
(Body Diode)

ALL

-

-

2.S"

A

ISM

Pulse Source Current
(Body Diode) ~

ALL

-

-

11

A

-

Modified MOSFET symbol
showing the integral
reverse P·N junction rectifier.

=
=
=

=
=
=

2N6802

~

=

ALL
0.7·
Diode Forward Voltege (2)
1.4·
V
Tc 2S·C. Is 2.SA. VGS OV
Reverse Recovery Time
ALL
800
ns
TJ lSO·C, IF 2.SA. dlF/dt lOOAlpS
ALL
pC
Reverse Recovered Charge
4.6
TJ lSO·C, IF 2.SA. dlF/dt lOOAlpS
Forward Tum·on Time
ALL
Intrinsic tum·on time is negligible. Turn·on speed is substentially controlled by La, + LD.
Ion
..
 IOlon) II ROSlon) max.

vGs'sov- I-

'r-

-

1= =

-

I-- TJ = ~12S0C

-

t--TJ='-S50C

Tj= 250C

~

",'iI
fI.

I

I

I. ~I

'!V~ ~ =
100

=
=

~
300

200

1

VGS. GATE TO SOURCE VOL TAGE (VOL lSI

Vas. DRAIN TO SOURCE VOLTAGE (VOL lSI

Flg.3 - Typical Saturation Characteristic.

Fig. 4 - Forward Bla. Safe OperaUng Area
10
I.IljS

I-

19:?,__
;;~'V

801"sPUJETES!

;9

~

L. ......

3

~

)

I

I"

l?

-

T

I

1---

50~=~

I

1.0

....:$.

0.5

::&

~I1C

:::>
to

!Ii

I1C

VGS'' ,= =
"Y"'"

Q

.E

....

IIljS

1 l¢

tOm

0.1
=T = 15O"C MAX.
0.05 =SINGLE PULSE

C

2_1 2N6802

0.02
0.01

1.0

10

I I IIIII!
10

I I
20

50

100 200

V... DRAIN·TO-SOURCE VOLTAGE (VOLTS)

Vos. DRAIN lO-SOURCE VOLTAGE (VOLTS)

4·200

III

I

0.2

IIII
500

2N6801

2N6802

Fig. 5 - Maximum Effectiv. Transient Thermal Impedance, Junction·to-Case Vs. Pulse Duration

I

•

0'" 0.5
NOTES

~

f-~.2

f-b.1

~~

JTUL

Iil""

~2~

If

E~·05
0.02

r-O.OI

~INGLE PULSE (TRA~SIENT

2 PER UNIT BASE = R'hJC .. 5 0 DEG CfW

THERMAL IMPEDANCE)

..i-+"'"

:~

1 DUTY FACTOR, 0 =

3 TJM - TC" POM ZthJCl!l

10-3

2

5

10.2

2

S

10-1

1.0

10

'I. SQUARE WAVE PULSE DURATION (SECONDS)

Fig.6 - Typical Transconductance Vs. Drain Current
TJ

./

V
I

/

V

V

-550C___

M
TJ = 25;;'-

./

1/

I l/
/, '/

~

V

J

Fig. 7 - Typical Source.!)r.in Diode Forward Voltage

-- -

ITJ "25 0 C

1..0""'"

r'-TJ'" 1500e

/'

J:'::~ r-

,/"

//

..,

TJ= 150°C

IV!

vas> 1010n) x ROSlon)

f

I

miX.

80~PULSETEST

10

TJ=j5 0 C

I I

o

10. DRAIN CURRENT IAMPERES)

VSQ. SQURCE·TO-DRAIN VOLTAGE (VOLTS)

Fig. 9 - Normalized On·Resillence VI. Temperature

Fig. 8 - Breakdown Voltage Vs. Temperature
1.2 5

2.2

5

.".

./
6

V

./

V

"

IL

...

/

f-""

V

"
!

,P
_

. /~

0.6

.;"
-40

40
80
120
TJ,JUNCTION TEMPERATURE loe}

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

/

/'"

5

0.7 6

V

160

V
VGS-IOV

'01 ~

I2~A

40
80
120
TJ.JUNCTION TEMPERATURE (OC)

4·201

110

PRINTED IN USA.

2N6801 2N6802

Fig. 10 - Typical Capacitance V•. Drain·to.source Voltage

Fig. 11 - Tvpical Gate Charge Vs. Gate·to.source Voltage

2000

20

J

GS .'

-

u

CotI=Cd.
I

1200

~

~

u

\

:'I 800

tliCed
c,,+cgd

-

Vas _I,OOV
I

-

Vas - 4DOV

Vas - 250V

~

~/

AII'

_\ '~

~

10

-

/

u

>

'0 "6A
FOR TEST CIRCUIT

V

20

30

1

16

SO

40

'I

30

r-- r--

........
........

VGS"10V~

...

.,/

""

V

V

'0

Fig. 13 - Maximum Drain Current VI. Ca .. Temperature

24

V

32

24

0!l' TOTAL GATE CH,II,RGE (nCI

Fig. 12 - Typical On·Resistance VI. Drain Current
ROSlonl MEASURED WtTH CURRENT PULSE OF
2.0",sDURATION INITIAL TJ'"25 0 C (HEATING
EFFECT OF 2 O.,PULSE IS MINIMAL

I--

SE FIGiRE ",

Vas. ORAIN TO SOURCE VOLTAGE (VOlTSI

,o

"'-.

~/

c,n

\
'00

-

'Ot;Cds+Ctd

z

;0

J.

I ',' MHrl

tip = c.. +Cgd,CdsSHORTED
c",' c..

1600

VGS= 20V

........
.......... r-...

-

~

.......

,
r\.
~

06

10
15
'0. DRAIN CURRENT (AMPERES)

20

\

a

SO

2S

2S

15

100

ISO

Te. CASE TEMPERATURE (OC)

Fig. 1 d - Power Vs. Temperature Derating Curve
40
3S

~
;;
z

30

2S

"" " "'-

0

~
ii 2.
c

.......

~

~
.P

15
10

~

I""
20

.0

80

100

Tc CASE TEMPERATURl

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

4·202

(oC)

120

........

"

140

PRINTED IN U.S.A

2N6801

Fig. 15 - Clamped Inductive Test Circuit

2N6802

•

Fig. 16 - Clamped Inductive Waveform.
EC

VARY tp TO OBTAIN

VOS.R

REQUIRED PEAK Il
OUT

',_--6---....__,.,..-'
E1 = 0 5 BVOSS

EC = 0 15 BVOSS

Fig. 17 - Switching Time Test Circuit

_oT"-- TOv, SCOPE

Fig. 18 - Gate Charge Tast Circuit
+Vos
(ISOLATED
SUPPLY)

-

o~·5mA

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

'0

'D

CURRENT
SAMPLING
RESISTOR

CURRENT
SAMPLING
RESISTOR

4-203

PRINTED IN USA.

U2TIOI
U2TI05
U2T201
U2T205

POWER DARLINGTONS
10 Amp, 150V, Planar NPN

FEATURES
•
•
•
•
•

DESCRIPTION

High Current Gain: up to 2000 min @ Ic == SA
Low Saturation Voltage: as low as l.SV max @ Ic == SA
High Voltage: up to ISOV min VCER
Monolithic Design Incorporating Multiple-Emitter Techniques
Triple-Diffused Planar Construction

Unitrode NPN Darlingtons consist of a two
transistor circuit on a single monolithic
planar chip.

ABSOLUTE MAXIMUM RATINGS
3 PIN TO-66

TO-33

U2T101

BOV.

Collector-Emitter Voltage
Emitter Base Voltages,

D.C. Collector Current
Peak Collector Current
Base I Current .
Power Dissipation
2S0C Ambient .
100°C Case
Thermal Resistance, Junction to Case .
Operating and Storage Temperature Range

ISOV ...
6V ....
12V
SA .

'" ... 6V .

VE82
VEBI

12V
SA.
. ... lOA ..
.. ..... .... O.SA.

U2T201

U2Tl05

.. ISOV

.6V
.... 12V
SA.

.6V
12V
SA

lOA .

.... lOA .....

O.5A

...... O.SA ..

U2T205

. BOV ..

lOA
.... O.5A

2.SW ..
2.SW
.2SW
2SW
4°C/W
-6SoC to 2000C

.. IW.
. IW...
........... SW.
. SW.
20°C/W
-6SoC to 200°C

MECHANICAL SPECIFICATIONS
U2Tl05

U2Tl0l

..

TO-33

,

305-335
3:35-370

775-851
851-940
610-660

240-260

ggf

017%

E

15 MIN

432t ~g
3810 MIN
046MAX

018 MAX

031i003
200
100
029-045
100

079:t 08
102

254
074-114

254

COLLECTOR CONNECTED TO CASE

U2T201

.

,

c

~
111

C

635-864
lS7SMAX

050-075
028-034

127-191
071-086
914 MIN
2433-2443

J
K
L
M

958- 962
190- 210
190-210
350 MAX RAO

570-590
142-152
145 MAX RAO

3 Pin TO-66

oooo

250- 340
620 MAX

360 MIN

H

U2T205

483-533
483-533
889 MAX RAD

1448-1499
361-386
368 MAX RAO

COLLECTOR CONNECTED TO CASE

4-204

~UNITRDDE

U2T10l

U2TI05

U2T201 U2T205

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
U2T101
Test
D.C. Current Gain
(Note 1)
D.C. Current Gain
(Note 1)
Collector Saturation Voltage
(Note 1)
Collector-Emitter
Breakdown Voltage
(Note 1)

U2T201

U2T105

Symbol

Min.

Max.

Min.

Max.

hFE

2000

-

1000

-

-

Ic = LOA, VCE = 2V, R82E = 1K

hFE

2000

-

1000

-

-

Ic = 5A, VCE = 5V, R82E = 100

VCE (sat)

-

1.5

-

2.5

V

Ic = 5A, RB2E = 100
U2T10l, 201: 1" = 5mA
U2T105, 205: 1" = lOrnA

BVCER

BO

-

150

-

V

Ic = 25mA, R"E = 2.2K, RB2E = 100

&

&

U2T205
Units

Collector Cutoff
Current

ICER

-

1.0

-

1.0

p.A

Collector Cutoff
Current

ICER

-

1.0

-

1.0

rnA

Collector Capacitance
A.C. Current Gain
Delay Time
Rise Time
Switching
Speeds
Storage Time

Cobo

-

100
5
100 Typ.
300 :ryp.

-

h'e
td
t.

Fall Time
Nate: 1. Pulse width

pf

100
5
100 Typ.
400 Typ.

-

ns
ns

t,

600 Typ.

500 Typ.

ns

t,

500 Typ.

SOO Typ.

ns

= 300 .uSi duty cycle

1"'~

$
IZ

...a:

a:

::>
u

a:

.5

t

.2

8

.1

UJ
...J
...J

I

_u

1"'-

Maximum Safe Operating Area

"-

"-

1

a:

,ulse Width=1 ms

aa:

.5

t5UJ

.2

o

r....

...J
...J

.1

1

.05

8

"- 1\

'~

Pulse Width = lms
Duty Cycle = 25%

\

\\\
\

\

Pulse Width = Ims
Duty Cycle = 10%
!\

i"-U2T205

I\;; "'-U2T201

_u

I+-U2T105
1-+--U2T101

Te = 100°C

D.C.- ~

...a:

"'- '\ r....

''

'"

$
IZ

=1 ms
D~ty Cycle = 25%

'\. Pulse Width

I"

.02

,"-

TA - 25'C

_l Duty Crcle = 2.5%

''""
'" "" '"
I'\.

U2T201 & 205
10

r--rul~el Width ~ 1 ms
~ I\.
I. Duty Cycle - 10%

D.C.- ~

.05

.01

I

r\.

RBI E= 2.2K, RB2E = 100
U2T10l, 201: VCE = BOV
U2T10S, 205: VCE = 1SOV
R"E - 2.2K, RB2E _ 100, T _lSOoC
U2T101, 201: VCE = BOV
U2T105, 205: VCE = lS0V
VC" = 10, IE = 0, f = 1MHz
Ic _1.0A, VCE - 10V, f - 10MHz, RB2E - 100
Vcc - 30V,
Ic=SA,
U2T10l, 201: I, (on) = I, (off) = SmA,
U2T105, 205: I, (on) = I, (off) = lOrnA,
RB2E = 100

~20/0.

Maximum Safe Operating Area
U2Tl0l & 105
10

Test Conditions

.02

"-

.01

5 10 20
50 80100150
VeE - COLLECTOR -EMITTER VOLTAGE (V)

1

2
5 10
20 50 80100150
VeE - COLLECTOR - EMITTER VOLTAGE (V)

D.C. Current Gain VS. Collector Current

U2Tl0l, U2Tl05, U2T201, U2T205
10.000 r - - - - - , - - - - - , - - - - - ,

z
;;:

"
a:
'"a:

1000

I-

z

::>
u
ti
ci

I
,:

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·205

100

10 '--_ _ _ _-'-_ _ _ _-L--_ _ _- - - '
.01
.1
1.0
10
Ie - COLLECTOR CURRENT (A)

•

U2T301
U2T305

POWER DARLINGTONS

U2T401
U2T405

5 Amp, 150V, Planar NPN
FEATURES
• High Current Gain: 1000 min. @ Ie 2A
• Low Saturation Voltage: as low as 1.SV max. @ Ie
2A
• High Voltage: up to 150V min. VeER
• Monolithic Design Incorporating Multiple-Emitter Techniques
• Triple-Diffused Planar Construction

=

OESCRIPTION
Unitrode NPN Darlingtons consist of a two
transistor circuit on a single monolithic
planar chip.

=

ABSOLUTE MAXIMUM RATINGS
3 PIN TO-II
U2T401
U2T405

TO-33

Collector-Emitter Voltage
Emitter Base Voltages,

VEB2
VEBI

.

D.C. Collector Current
Peak Collector Current
Base 1 Current ....
Power Dissipation
25·C Ambient .. .. ............... .
lOO·C Case .
Thermal Resistance
Junction to Case ...
Operating and Storage Temperature Range

U2T301

U2T305

........ 60V...

....... 1S0V ...

.. 6OV..

.. 150V

....................... 6V................. 6V
........... 6V...
.. 6V. .... ...............
............... ..................
.. .... 12V............... 12V
............... 12V .......... 12V.. .
............ 2A......
...2A
..... 2A
.......... 2A .. .
......... SA
SA
..... SA...
. SA ..
. O.SA.............. O.5A
.. O.SA ............ O.5A .

... !W ..

lW

... 4W ..

.4W

................ 2W............... 2W
.. ................................... 16W ............. 16W

........ ..... 2S·C/W ..
. -65·C to 200·C.

6·C/W....
. .... -6S·C to 200·C

MECHANICAL SPECIFICATIONS

U2T301

U2T305

TO-33

In•.

305-335

775-851
851-940
610-660

335-370

240- 260
0171:

BASE2

E

~~

432i: ~~

15MIN
DIS MAX

3810MIN
046 MAX

031 t 003

079
102
254

200
100
029-045
100

t

08

074-114
254

COLLECTOR CONNECTED TO CASE

U2T401

",

C

F
G
H
J
K

U2T405

250-340

635-864

620 MAl(

1575 MAX

050-075

127-191

028- 034

071-086

360 MIN

914MIN

958-962

2433-2443
483-533
483-533

190-210
190- 210
350 MAX RAO

570-590
142-152
145 MAX RAO

3 Pin TO-66

889 MAX RAD

1448-1499
361-386
368 MAX RAD

COLLECTOR CONNECTED TO CASE

4-206

~UNITRDDE

U2T301

U2T40~

U2T305 U2T401

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

U2T301 & U2T401
Min.
Max.

Symbol

U2T30S & U2T 405
Min.
Max.

Test Conditions

Units

1000

-

-

1000

-

1000

-

-

VCE (sat)

-

1.5

-

2.5

V

= lA, VCE =2V, RB2E = 1K
Ic =2A, VCE = 5V, R82E = 100
Ie: =2A, Rm :::;: 100, IB' = 4mA

BV CER

60

-

150

-

V

Ic

Collector Cutoff
Current

ICER

-

1.0

-

1.0

I'A

Collector Cutoff
Current

ICER

-

1.0

-

1.0

mA

D.C. Current Gain
(Note 1)
D.C. Current Gain
(Note 1)
Collector Saturation Voltage
(Note 1)
Collector-Emitter
Breakdown Voltage
(Note 1)

Collector Capacitance
A.C. Current Gain
Delay Time
Rise Time
Switching
Speeds
Storage Ti me
Fall Time

hFE

1000

hFE

GO
5
100 Typ.
200 Typ.
800 Typ.
300 Typ.

Cabo
hfe

td
t,

t,
tf

=

=

2.2K, R82E

= 100

=

=

pf

-

-

25mA, RBIE

2.2K, Rm = 100
U2T301, 401: VCE = GOV
U2T305, 405: VCE 150V'
RBIE - 2.2K, R82E _ 100, T _ 150'C
U2T301, 401: VCE = 60V
U2T305, 405: VCE = 150V
VCB' - 10V, IE - 0, f _ 1M Hz
Ic - 0.5A, VCE - 10V, f _ 10M Hz, R82E _ 100
RBIE

60
5
100 Typ.
300 Typ.
800 Typ.
300 Typ.

-

Ic

ns
ns
ns
ns

Vcc

=

3OV, Ic

Rm

=

100

=

2A, IB (on)

=

IB (off)

=

4mA

Note: 1. Pulse width = 300 I'S; duty cycle ";;2%.

Maximum Safe Operating Area
U2T301 & 305
5

i'I""
f"'. I". 1"<

1"\
~

....Z
~

.5

1"\

II:

:::l

u

II:

.2

o

t...

I-Dt

.1

...J

5

.05

I

I'"
=

.02

=
=
Pulse Width = Ims
Duty Cycle = 10%

~

~

I'\.

....
Z

...~

.5

Duty Cycle

:::l

I

.2

II:

~

&l

=

25%

I I

Pulse Width
Duty Cycle

=Ims

Tc

\

= 10%

.1

8

]'\

.05
D.C.-

I

U2T301

= loo'C

1\\
U

...J
...J

1\
~

l\

1\
~I'

_u .02

I<--- U2T305

I<-

t--U2T401

.01

I"
1

Pulse Width = Ims

u

I"

l~

~

2

]'\

I'"

.01

.0oS

.! !

T, =2S'C
Pulse Width
Ims
Duty Cycle
2.5%

f'). f'\,

Pulse Width
Ims
Duty Cycle - 25%

u

_u

I". /
~ I". ~
~

Maximum Safe Operating Area
U2T401 & 405

)+-U2T405
.005

10
20
SO 100 ISO
Ve,-COLLECTOR-EMITTER VOLTAGE (V)

1

2

5
10 20
SO 100 ISO
COLLECTOR - EM lITER VOLTAGE (V)

Ve, -

O.C. Current Gain vs. Collector Current

U2T301, U2T305, U2T401, U2T405
10,000 , - - - - - , - - - - - - , - - - - - ,
T = 12S'C

z

~....

1000

~---~t_~~-~~~~r_~

...z
II:
II:

:::l
U

U
c:i 100 ~~:....--t_----+----~

I

10

.1

.01
Ie UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1.0

10

COLLECTOR CURRENT (A)

4-207

PRINTED IN U.S.A.

•

POWER DARLINGTONS

U2TA506
U2TA508
U2TA510

3 Amp, IOOV, Planar NPN, Plastic

FEATURES
• High Current Gain: 500 min. @ Ic = 3A
• Low Saturation Voltage: as low as 1.5V max. @ Ic
• Economic Plastic Molded Construction

DESCRIPTION
Unitrode NPN Darlingtons consist of a
two transistor circuit on a single monolithic planar chip, including integral bias.
resistance. and protective diode. It is
ideally suited for pulse power applications in power supplies, printers, solid
state relays and displays.

=3A

ABSOLUTE MAXIMUM RATINGS
U2TA506

U2TA50B

U2TA51 0

......... SOV .....
Collector-Base Voltage, Vao ................. .
.. ...... IOOV ....... .
.. ............. I20V
Collector-Emitter Voltage, VCEO
........... IOOV
....... 60V.
SOV ... .
Emitter-Base Voltage, VEao
5V .. ................... .
D.C. Collector Current, Ic .
..............75A
Peak Collector Current, Ic ...
5A.
Base Current, la ....
.6A ..... .
Power Dissipation
25'C Case
........................ .....................................
. ......................... 2.2W ................................................... .
25'C Ambient
.............................................
............ 871mW'
.................................
Thermal Resistance, 9 J _ C
....................................................................................... .......................
... 62.5'C/W ...............................................
Thermal Resistance, 9 J _ A
........................................................... .......
. ............ 155'C/W .............................................. ..
Storage Temperature Range .
..................... .................................
.............. -55 to +150'C ............................... .
..............................
.................................... +175'C ........................................... ..
Maximum Junction Temperature .. ...... ........

U2TA506

T
A

c::s

...L

~B~-

U2TA508

U2TA510

TO-92

D

=r
I ICc>-= j 17'~
=

C

E

~

1

Be>--

-I ~'
EC>--'

H

A

B
C
D
E
F
G
H

J

INCHES
.135 MIN.
170 - 210
500 MIN.
.016 - .019
175 - 205
.125 - .165
080 - 105
095 - 105
.045 - .055

MIlliMETERS
3.42 MIN
431-5.33
12.70 MIN.
406 - .482
4.44 - 5 21
3.17 - 4.19
203 - 2.66
2.41 - 2.66
114 - 140

[ill]
3/78

4-208

_UNITRODE

U2TA506 U2TA508 U2TA510
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

D.C. Current Gain (Note 1)
D.C. Current Gai n (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
Collector-Emitter Breakdown Voltage
(Note 1)
U2TA506
U2TA508
U2TA510
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Output Capacitance
A.C. Current Gain
Rise Time
Storage Time
Fall Time

hFE
hFE
hFE
VCE (sat)
BVcEO

Min.

-

-

Vdc
Vdc

10
1
50
50

t,

=
=
=
=
=
=

/LAdc
mAdc
/LAdc
pf

=
=
=
= =
=
=
= =

VCE
rating, R lOOn
VCE
rating, R lOOn, TA 125'C
VEB
5Vdc
VCB
10Vdc, IE 0, f
1MHz
Ic 1Adc, VCE 5Vdc, f
10MHz
Ic- 2A
Vcc
rating, IB 1001
IB loffl
4mA

-

4.0 Typ.
600 Typ.
1500 Typ.
800 Typ.

=
=
=
=

Ic
lA, VCE 5Vdc
Ic
3A, VCE 5Vdc
Ic
SA, VCE 5Vdc
Ic 3A, IB
30mA
Ic _10mAdc

-

60
80
100

tf

=
=
=
=

-

-

1000
500
300 Typ.
1.5

ICER
ICER
lEBO
Cob
hf•
t,

Test Conditions

Units

Max.

ns
ns
ns

Note 1: Pulse width = 3001'5; duty cycle:S 2%.
Note 2: For thermal considerations for operating U2TA506. U2TA508 and U2TA51O. refer to Application Note U·77.

Maximum Safe Operati11g Area
U2TA506, 508 & 510

1"'3:
I-

'
"
"''
"
'" I'""'''"""'-

b-,.
'" .5 ~ ~
Z

0:
0:

:::>
(J

0:

.2

0

ti

'"
..J
..J

0

.05

(J

I

_u

D.C .~

Pulse

02

OilY
1

cyr

TA =25·C.

D

z

:<

to
I-

'"0:0:
:::>
(J

'Ims~
" 17

e = [25'i

1K

z

~
f)(

width =

,---,-:::::==:::r------,

Pulse Width = Imsuty Cycle = 2.5%

c..i
ci 100

I

-U2TA506

Duty Cycle = 10%
Pulse Width == Ims

01
.005

V

1 tl

D.C. Current Gain VS. Collector Current

10K

~

-U2TA508
_,U2TA510

10L-_ _ _ _L-_ _ _ _L-_ _ _

2
5
10 20
50 100 ISO
VeE-COLLECTOR TO EM liTER VOLTAGE IV)

.01

.1

IA

~

lOA

Ie - COLLECTOR CURRENT IAI

Saturation Voltage
vs Base Current
2.00

\

\

1.75
1\25'C

~1.50
s::

\

(J

~
;::: 1.25
I

\.~25'C
= 3A

~ I::::::..

\

J 1.00

125O~

.75

0.1 0.2

"-,.......

~

j

\

0.5

1.0

f=:::

Ie = lA
~'C

.........

2

5

10

20

50 100 200

I. - BASE CURRENT (mA)
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. 1617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-209

PRINTED IN U.S.A.

•

U2TA606
U2TA608
U2TA610

POWER DARLINGTONS
3A, lOOV, Planar PNP, Plastic
FEATURES

DESCRIPTION

• High current gain: 500 min @ Ie = 3A
• Low saturation voltage: as low as 1.5V
max@ le= 3A
• Economic plastic molded construction

Unitrode PNP Darlingtons consist of two
transistor circuits on a single monolithic
planar chip, including integral bias
resistance. It is ideally suited for pulse
applications.in power supplies, printers,
solid state relays and displays.

ABSOLUTE MAXIMUM RATINGS
U2TA606

U2TA608

U2TA610

Collector-Base Voltage, VeBO ..................... .- ....................... 80V ....... : .......... 100V ................. 120V .. .
Collector-Emitter Voltage, VeEo .......................................... 60V .................. 80V .................. 100V .. .
Emitter-Base Voltage, VEeo ...................................................................... 5V ........................... .
D.C. Collector Current, Ie ....................................................................... 0.75A ......................... .
Peak Collector Current, Ie ...................................................................... 5.0A .......................... .
Base Current, Ie ............................................................................... 0.6A .......................... .
Power Dissi pation
25°C Case ..................................................................................2.2W .......................... .
25°C Ambient .....................................................................,....... 871mW ........................ .
Thermal Resistance, 8J-e .................................................................... 62.5°C/W ....................... .
Thermal Resistance, 8J-' ..................................................................... 155°C/W ........................ .
Storage Temperature Range .............................................................. -55°C to +150°C .................... .
Maximum Junction Temperature .............................................................. 150°C ......................... .

MECHANICAL SPECIFICATIONS
U2TA606 U2TA608 U2TA610

TO-92

D

T[l:+~iJ
~l:~ "

i

~B---+-C~ ~F

G

A

B
C
D
E
F

G
H

J

INCHES
.135 MIN.
.170 - .210
.500 MIN.
.016 - .019
.175 - .205
.125 - .165
.080 - .105
.095 - .105
.045 - .055

MILLIMETERS
3.42 MIN.
4.31 - 5.33
12.70 MIN
.406 - .482
4.44 - 5.21
3.17 - 4.19
2.03 - 2.66
2.41 - 2.66
1.14 - 1.40

[ill]
3/83

4-210

_UNITRODE

U2TA606'U2TA608 U2TA610

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
TEST
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation
Voltage (Note 1)
Collector-Emitter Breakdown
Voltage (Note 1)
U2TA606
U2TA608
U2TA61O

SYMBOL

MIN.

MAX.

UNITS

hFE
hFE
VeE(sat)

1000
500

-

-

-

1.5

60
80
100

-

-

10
1
50
50

BVeEo

Vdc

=-lA, VeE =-5Vdc
=-3A, VeE =-5Vdc
=-3A, 10 = -30mA

Vdc

Ie

=-lOmAdc

/lAdc
mAdc
/lAdc
pF

VeE
VeE
VEO
Veo

-

Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Output Capacitance

leER
IEoo
Cob

A.C. Current Gain

hFE

4.0 Typ.

-

Rise Time
Storage Time
Fall Time

t,
t,
t,

600 Typ.
1500 Typ.
800 Typ.

ns
ns
ns

leER

TEST CONDITIONS
Ie
Ie
Ie

= Rating, R = lOOn
= Rating, R =lOOn, T = 125°(
= -5Vdc
= -lOVdc, IE:' 0, f = 1MHz
Ie =-lAdc, VeE =-5Vdc, f = 10M Hz
Ie = -2A
Vee = Rating, 10 (on) = I. (off) = -4mA

Note: 1. Pulse width = 300/1s; duty cycle:5 2%.
Nota: 2. For thermal considerations for operating U2TA606, U2TA608 and U2TA610, refer to Application Note U-77.

Saturation Voltage vs
Base Current

Gain vs Collector Current
3000
2000

VeE = 5V

~

-'

C3

~lOOO

~

!z'"UJ

700

200

V

V

125'C

...... V

25'C"

~~

175
-'

«
(J
ii: 150

~

i'=

 10(onl

iii

~ 0.8

5

I-

~

0.6

::.

0.4

2.0

I~

TJ "1-55'~,--

50

I
IJ:;;;

k;~v

~

-

~

D••

"

0.2

i

0.1

III

UFND1ZO

Id.!

UFNDIZ 3

1.0

UFND1ZO

~

UFND1Z3

5

lOOps

l-

0.05

z

..::

1 ms

!?

I

TJ" 150'C MAX.
SINGLE PULSE

0.02

i

10Im
DC

0.01
0.005

.l-~

I

4V_ i--

UFND1Z3

UFND1ZO

0.002

I
2
3
4
VOS, ORAIN-TO-SOURCE VOLTAGE (VOLTSI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

12

Fig, 4 - Maximum Safe Operating Area

/.~ V- I
~7~- f ./. ~
.I.~ V
I
"'-VGS"jV- ~
~ i"""

~
.... T

J)

10
VGS, GATE·TO-SOURCE VOLTAGE (VOLTSI

3.0
2.0

.... ~ _Jv- I-

f--

2"~ "" ........

rn

Fig. 3 - Typical Saturation Characteristics

0.4

TJ •

5l
I
4V

...

,'I

TJ' 125'~""

!?
0.2

- 8o~ILLSE )EST

if
"

B

z

10
20
30
40
Vos, ORAIN-TO-SOURCE VOLTAGE IVOLTSI

1.6

J

!Ii

I

r

If

RaSlon) max.

II:

1.0

VGS-6 V

/

80 ~ puJmJT

9l

I
Y
I

0.4

LO'

Fig, 2 - Typical Transfer Characteristics
1.2

iov
f-

+

 'olonl

D.•

1/

CI

0.2

-

,

V

J

t; 0.3
CI
z

:>

~
I

V

/

"~

ii

-

TJ-!S5 0 C

i

ew

10~smm

,IRoSI~nl ~,.

0.5

ill

Fig. 6 - Typical Sou rca-Drain Dioda Forward Voltage

~

TJ=25 0 C

~

i;"

V-

r-r-r-r~II~-+~~~~

0.2-

TJ' 15DOC:II''--f--I--+-+--I---t--t

.1

0.25

0.15

0.5

1.0

'/

I

0.61=

P

J

0.1

/.

~~ I.D'~~f1/~V~~~~

TJ" 1250C

II/

l-

~

~

1.25

0.1

1.5

TJ=250C-f-+-I--+--I

0L-...J.-0J..4:--.L.l.JJ":'~':..8-JI...-~I.I..2-J...--L'.6~.J..~2.0.

10. DRAIN CURRENT (AMPERES)

Vso. SOURCE·TO-DRAIN VOLTAGE (VOLTS)

Fig. 8 - Normalized On-Resistance V,. Temperatura

Fig. 7 - Breakdown Voltage Vs. Temperature

2. 5

1.25

,.,..

V~s clJv

,.,.. io-"""

r-- -'ocO.5A

., ~
./

/

I'

,V

i-'"

i-'"
r-

./

V

V

. / i-'"

5

0.75
-40

o

40

80

120

o

160

-40

TJ. JUNCT'ON TEMPERATURE 10C)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

o

40

80

120

160

TJ.JUNCT'ON TEMPERATURE 1°C)

4-217

PRINTED IN U.S A.

•

UFNDIZO UFNDIZ3

Fig. 10 - Typical Gate Charge VI. Gate-to·Source Voltage

Fig. 9 - Typical Capacitance VI. Drain·to·Source Voltage
100

I
_I

v~s. o!
f'l MHz

60

\

20

~ Vos'

-

f"..

\
w

I

c!..
"""""
cL
%

/.(/

II
1.0

~

3.0

4.0

Fig. 12 - Maximum Drain Current VI. Case Temperature
05

f"".. ......

2.6

~.8~~Wu~~~~g:~~N~~T~LC~JR=R2E5~1~~~:!~~G
EffECT OF 2.0 P.I PULSE IS MINIMAL.)

.......

0.4

I!

2

...z
'"'"=>

As'20V

~

2.0

Og. TOTAL GATE CHARGE (nC)

Fig. 11 - Typical On-Resistance VI. Drain Current

-

'O·1.2A
FOR TEST CIRCUIT~EEFIG~RE.f7 I

5/

-

~

~V

/; V

o

W
~
~
~
40
VOS. ORAIN·TO-SOURCE VOLTAGE (VOLTSI

8

BDV. UFN01ZO
.

I

I

r'\.

VOS'50:~

Cia

\

40

",'

)OS'2J,

5

-

~Cds+Cgd

\~ 1'-0...

!'"

~

1

cC,,+~gd
go gd

Coss=Cds+

...

1

C;" • Cgo + Coli. Cds SHORTEO_
C'" • Coli

80

.so

0

V

z

~

........

"
.......

03

-......

........

......... ,D1Z0

UFN~

02

"""",""'I\.
.....

~

!?
I

1.4

o

1.0

2.0

o

3.0

25

50

75

'0- DRAIN CURRENT (AMPERES)

100

125

,

~

15U

Te. CASE TEMPERATURE (OC)

Fig. 13 - Power VI. Temperature Derating Curve
4

Rlht" IJKIW- I-

2

0

-....... ......
8

-.......

6

i'......

i'......
o. 2

f'-..
-.......

20

40

60

80

100

120

,

140

Te. CASE TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4-218

PRINTED IN U.S A.

UFND1ZO

Fig. 14 - Clamped Inductive Test Circuit

Fig. 15 - Clamped Inductive Waveforms

R

II

r+-1

VAAY tp TO OBTAIN
REQUIRED PEAK Il

VGS'

UFND1Z3

Uo_UT~~r-Y

> \
'"
Il

'"

Il+-----o-----~~~~

;'

\

\._-----

Fig. 16 - Switching Time Test Circuit

v,
PULSE

GENERATOR
r------,

I
I
I

L_

50n

-

I

I

___ .J

''---~TO

SCOPE

O.Oln

50n

HIGH FREQUENCY
SHUNT

Fig. 17 - Gate Charge Test Circuit

,------0 ~~g~ATEO
SUPPlYI
SAME TYPE
AS OUT

12V
BATTERY

-

OUT

o~1.5mA

--'\N\r-4-"'VV\,.--O -VoS
IG

CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-219

10
'":"

CURRENT

SHUNT

PRINTED IN USA

UFNDII0
UFNDl13

POWER MOSFET TRANSISTORS
100 Volt, 0.6 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros,o~) and a high transconductance.

For Automatic Insertion
Compact, End Stackable
Fast Switching
Low Drive Current
Easily Paralleled
No Second Brea kdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
When packaged in the low profile, end stackable 4 pin dual-in-line package, the
Unitrode power MOSFET devices can be used in high volume applications where
automatic insertion is a must such as computer circuit boards, consumer equipment,
and printers.

PRODUCT SUMMARY

Part Number

VDs

RDS(on)

ID

UFNDllO

100V

0.60

l.OA

UFND1l3

60V

0.80

0.8A

MECHANICAL SPECIFICATIONS
UFNDllO UFND1l3

DIL-4

,mho
~G

043(D01!J

II

031 (0(112)-11--

(i)

162J!3001

o

APf'lIES TO SPRUD OF LUDSPRIORTO INSTALLATION

G)APPLIESTOINSTALLEDLEADCENTERS

Nominal Dimensions in Millimeters and (Inches)

4/83

4-220

~UNITRDDE

UFNDllO UFND1l3

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNOll0

UFNOl13

Units

100

60

V

Drain - Gate Voltege IRGS = 1 Mill (j)

100

60

V

Continuous Drain Current

1.0

O.S

A

10M

Pulsed Drain Current

8.0

6.4

A

VGS
PO@TC= 25°C

Max. Power Dissipation

VOS

Drain - Source Voltage

VOGR
10@TC= 25°C

CV

Gate - Source Voltage

±20
1.0

Linear Derating Factor

O.OOS
8.0

z

1OO~H

•

A

6.4

I

Operating Junction and
Storage Temperature Range

TJ
T stg

W
WIK

ISee Fig. 131

(See Fig. 14 and 151 L

Inductive Current, Clamped

ILM

V

ISee Fig. 131

-55to150

°C

ELECTRICAL CHARACTERISTICS @ TC = 25·C (Unless otherwise specified)
Parameter

BVOSS

Drain - Source Breakdown Voltage

V GSlthl Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

UFNOll0

100

-

-

V

VGS

= OV

UFNOl13

60

-

-

V

10 =

250~A

ALL

2.0

-

4.0

V

VOS - VGS' 10 - 250~A

500
-500

nA

VGS

nA

VGS - -20V

Test Conditions

IGSS
IGSS

Gate-Source Leakage Forward

ALL

-

-

Gate-Source Leakage Reverse

ALL

-

-

lOSS

Zero Gate Voltage Drain Current

ALL

-

-

250

~A

VOS = Max. Rating, VGS

-

1000

~A

VOS = Max. Rating x 0.8, VGS = OV, T C = 125·C

UFNOll0

1.0

-

-

A

UFNOl13

O.S

-

-

A

UFN0110

-

0.5

0.6

II

UFNOl13

-

0.6

O.S

II

ALL

o.s
-

10(onl

On-State Drain Current

®

= 20V
= OV

VOS ) 10(on) x ROS(on) max.' V GS = 10V

ROS(on) Static Drain-Source On-State
Resistance ®

®

VGS = 10V, 10

gfs

Forward Transconductance

Cjss

Input Capacitance

ALL

Coss

Output Capacitance

ALL

Crss

Reverse Transfer Capacitance

ALL

td on
tr

Turn-On Delay Time

ALL

Rise Time

ALL

td off)

Turn-Off Delay Time

tf

Fall Time

Qg
Qgs

1.2

-

S(Ul

135

200

pF

SO

100

pF

20

25

pF

10

20

ns
ns

15

25

ALL

-

15

25

ns

ALL

-

10

20

n.

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

5.0

7.0

nC

Gate-Source Charge

ALL

2.0

Gate-Drain ("Miller") Charge

ALL

7.0

-

nC

Qgd

-

nC

LO

Internal Drain Inductance

-

4.0

-

nH

ALL

LS

Internal Source Inductance

ALL

= O.SA

VOS ) 10(onl x ROS(on) max.' 10 = O.SA
VGS = OV, VOS
See Fig. 9

= 25V, f = 1.0 MHz

VOO = 0.5 BV OSS ' 10 - 0.8A, Zo = 5011
See Fig. 16
(MOSFET switching times are essentially
independent of operating temperature.)

V GS - 10V, 10 = 4.0A, VOS = O.S Max. Rating.
See Fig. 17 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
drain lead, 2.0mm
(0.08 in.1 from

Modified MOSFET
symbol showing the
internal device
inductances.

package to center of
die .

-

6.0

-

nH

.@)

Measured from the
source lead, 2.0mm

(0.08 in.) from
package to source

bonding pad.
,.

THERMAL RESISTANCE
RthJA

Junction-to-Ambient

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Free Air Operation

4-221

PRINTED IN

u.s

A

UFNDllO

UFND1l3

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

Continuous Source CUfFent

ISM

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

UFNDll0

-

-

1.0

A

UFND113

-

-

0.8

A

UFNDll0

-

-

8.0

A

·UFNDI13

-

-

6.4

A

UFNDll0

-

-

2.5

V

UFND112

-

2.0

100

-

0.2

-

~C

TJ = 150·C, IF = LOA, dlF/dt - l00A/"s

(Body Diodel

Pulse Source Current

(Body Diodel

~

VSD

Diode Forward Voltage @

t"
ORR

Reverse Recovery. Time

ALL

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS

(j)TJ = 25·Cto 150·C.

= 25·C.IS = LOA. Vas = OV

V

TC

ns

TJ

= 25·C,lS = O.SA, VGS = OV
= 150·C, IF - 1.0A, dlF/dt = 100 A/~s

Fig, 2 - Typical Transfer Characteristics
5.0

Fr=~~

tJ

4.0

~

~J'-5!OC,

4.0

;rJ'2~OC,

~ 3.0

80 14 PULSE TEST. 1
I
I
I

IZ
W

I-- f--Vos> IO(on)

""=>
'"z

6V

:! 2.0

2.0

Q

E

1.0

5r

4~
10

20

30

~

o

o

50

40

10
VGS, GATE·TO.sOURCE VOLTAGE (VOLTSI

Vas. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Fig, 4 - Maximum Safe Operating Area

Fig, 3 - typical Saturation Characteristics
5.0

-80LpujETES)~

AV

1li
~
:IE

~

~ [/

3.0

J. V

l-

I
z

~

i~
~7
BV

4.0

".

10

/

-

'E
1.0

J

IY
o
o

5.0

-VGS'7V-

~
j ~

2.0

2.0

~

1.0

"S

0.5

""
u'"

0.2

~

sy-

z

~

"'I:

IHr~113

~~~Dllo

0.05

10

~$

l00~.

1 ....

UFND113

=

10m~_

10~~

0.1

1>

TJ = 150DC MAX.
SI~G,lE'PULSE

I

0.02

5Y1
VOS, ORAIN·TO·SOURCE VOLTAGE (VOLTSI

UFND110

IZ

f/

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

RDSIOn).max,

J

E
1.0

I(

,

~

~

lLII

TJ= moc

~

I

.......

'II
i I '-J.!IJ fj

.~

L.o

o

I 'I

10 II:S PU LSE TEST

~f=BV

o

+ Leo

@PulseTest:Pulsewidth .. 300"s, Duty Cycle .. 2%.

Fig, 1 - Typical Output Characteristics
5.0

TC

0.01

4~_

0.005
0.5

4·222

DC

UFND113
1.0

. UFND110

10 20
50 100 200
500
VOS' DRAIN·TO·SOURCE VOLTAGE (VDLTSI

PRINTED IN USA

UFNDllO

Fig. 5 - Typical Transconductance VI. Drain Current

~

2.8

w
<.>

2.4

;e

10

-Lj,lI,lsETJsT

~DS >1'Dloo)1 x ROS~on) ml.

3.2

~

2.0

~
;:!

...

f..-

1.5

V

1.2

~

0.8
0.4

5

/

//

~

~z

:,....-- ,...-

-

/ /

1 '2JOC
J

TJ '" 25 0C

TJ ,.12soe

5 f--TJ= ISOoC

t ~ ....... r-

I

II

I

2

L

!

o. 1

0.2

'D. ORAIN CURRENT (AMPERES)

0

~

~S

1.20

2.25

1.15

2.00

1.10

./

1.05

:;:;!::;!

~~
=>'"

1.00

.. ;!;

0.95

00

~
z

~

0

:g

~

0.90

./

V

L

,/"

1.8

2.0

1.15
z
~ffi 1.50
~~

V

~~

...... ~

./

1.25

~~ 1.00

..................

~

0.15

I

0.50

0.80
·20

20

40

60

80

100

120

o

140

........ f-""

·60

i...--"

VGS"0V
'D"'O.8A

-40

-20

20

40

r

I

60

80

100

120

140

TJ• JUNCTION TEMPERATURE (oCI

TJ• JUNCTION TEMPERATURE (OC)

UNITRODE CORPORATION· 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

V

.........

0.25
-40

/"

....... V

0'"

0.85

0.1~0

,

0.6
0.8
10
1.2
14
16
Vso. SOURCE·TO·DRAIN VOLTAGE (VOLTS)
0.4

2.5D

>

z

I

Fig. 8 - Normalized On-Resistance VI. Temperature

Fig. 7 - Breakdown Voltage VI. Temperature
1.25
w

J

11 I

TJ=-55 0 C

o
o

~

•

Fig. 6 - Typical Source-Drain Diode Forward Voltage

4.0
3.6

UFND1l3

4-223

PRINTED IN USA

UFNDllO

Fig. 10 - Typical Gate Charge Vs. Gate·to·Source Voltage

Fig. 9 - Typical Capacitance VI. Drain·to-Source Voltage
5110

...'"

~
~

20

JGSJ

.IC·

1. .l

.. ..'
'-IMHz

=C + C'" Cds SHORTED
"c,. - C'"
COll·Cd.... ~- I-..
IItIC.+Cgd
- I--

400

!Sc

..~

~
w

'"

3110

~ 2011

100

\

\

""""'r-

--

I

cL

Y,.

PULSE IS

•

50

MINIMA~.I

~

-

f'..
~

~

....

_v1s= 10V

r-.....

:$ 0.6
zw

"'"'
B

"'=>c

z

./

~~

=

~

r'NDll0

UFND1~

d.•

......

~

'" r--...',

~

~
.9
c

VGS 12oV-

t

......

r....

~

1.0

0.5

10

""""'- i'..

0.8

15

'~"

6

Fig. 12 - Maximum Drain Current Vs. Case Temperature

f--

-

-

0.2

~
10

15

-

0., TOTAL GATE CHARGE (nCI

1.5

~

10='A
FOR TEST CIRCUIT
SiE FIGt E ';

/'

w

~

V

~

1.0

EFFECT OF

~ If"

>""

I

~.gSi:n&u~~A~~:~~N~;i:l ~~R:R~:oTC.P~Hl:!T~~G

§

/~

10

>

2.0

;

Vos = IJ'N, UFND110

_

..~

C!..

Fig. 11· - Typical On·Resistance Vs. Drain Current

...

-

~.,.
Cia

10
20
30
40
Vos. oRA1N·To-SoURCE VOLTAGE (VoLTSI

...z

Vps-sr',

>

~=>

\~

V~S-Jv,
15

c

~ t\

U

UFND1l3

o

20

25

50

75

' 0, DRAIN CURRENT (AMPERES!

100

125

,

~

150

TC. CASE TEMPERATURE (OCI

Fig. 13 - Power VI. Temperature Derating Curve
1.6
I.'

~

!z

1.2

R'hJA <: 120 K/W-

"",

1.0

c

E 0.8
~

c

"'

~

0.6

"~

e D.•

"-

0.2

o

o

20

40

60

-

80

"

100

120

"- t'...
140

TC, CASE TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-224

PRINTED IN U S.A

UFNDllO UFND1l3

R

•

Fig. 15 - Clamped Inductive Waveforms

Fig. 14 - Clamped Inductive Test Circuit

VARY., TO OBTAIN

VGS '

IVLO~UT~~c:T
Fig. 16 - Switching Time Test Circuit

PULSE
GENERATOR

r-----'
I

I
I

L_

50n

I

_ __ oJI

TO SCOPE

50n

Fig. 17 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPlYI

o.r=n.s mA

V-~>-"'Vv\,....-O -VOS

IG

CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02i73 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-225

~

10
CURRENT
SHUNT

PRINTED IN USA

POWER MOSFET TRANSISTORS

UFND120
UFND123

100 Volt, 0.3 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros'on. and a high transconductance.

For Automatic Insertion
Compact, End Stackable
Fast Switching
Low Drive Current
Easily Paralleled
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
When packaged in the low profile, end stackable 4 pin dual-in-line package, the
Unitrode power MOSFET devices can be used in high volume applications where
automatic insertion is a must such as computer circuit boards, telecommunication
equipment, consumer equipment, and printers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFND120

100V

0.30

l.3A

UFND123

60V

0.40

l.lA

MECHANICAL SPECIFICATIONS

cp,.

D

UFND120 UFND123

DIL-4

•

,G

(!)APPLIESTDSPAfAODFtEADSPIIiOATOlffSTALLATION

Q)APPUESTOINSTAtlEOlEADtEIlTEIlS

Nominal Dimensions in Millimeters and (Inches)

4/83

4-226

~UNITRODE

UFND120

UFND123

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNDl20

UFND123

Units

100

60

V

100

60

V

Continuous Drain Current

1.3

1.1

A

IDM

Pulsed Drain Current

S.2

4.4

VGS
PD@TA= 2S·C

Gate - Source Voltage

CD

VDS

Drain - Source Voltage

VDGR
ID@TA= 2S·C

Drain - Gate Vol'age IRGS = 1 Mil)

CD

Max. Power Dissipation

Linear Derating Factor

1.0 (See Fig. 13)

W

O.OOB (See Fig. 13)

W/K

(See Fig. 14 and lS) L = 1OO~H

Inductive Current, Clamped

ILM

I

S.21
Operating Junction and
Storage Temperature Range

TJ
T stg

A
V

±20

lead Temperature

A

4.4

-S5to 150

·C

300 (0.063 in. (1.6mm) Irom case lor lOs)

·C

ELECTRICAL CHARACTERISTICS @ TC = 2S·C (Unless otherwise specified)
Parameter
BVDSS

Drain - Source Breakdown Voltage

Type

Min.

Typ.

UFNDl20

100

-

UFND123

50

ALL

2.0

Gate - Source Leakage Forward

ALL

IGSS

Gate - Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

-

VGS(th) Gate Threshold Voltage
IGSS

10(on)

ALL
On-State Drain Current

@

UFN0120

ROS(on) Static Drain - Source On-State

Resistance

®

®

1.3

Max.
-

Units

-

V

4.0

V

VOS

500

nA

VGS - 20V

-500

nA

VGS - -20V

250

,.A

VOS

1000

,.A

VOS ~ Max. Rating x O.B. VGS

-

A
A

UFN0123

1.1

UFNOl20

0.25

0.30

11

UFND123

-

0.30

0.40

ALL

0.9

1.0

-

0
5 (UI

9ls

Forward Transconductance

Ciss

Input Capacitance

ALL

-

450

600

pF

Coss

Output Capacitance

ALL

200

400

pF

C rss

Reverse Transfer Capacitance

ALL

SO

100

pF

td(on)

Turn-On Delay Time

ALL

tr

Rise Time

ALL

tdlolll
tl

Turn-Off Delay Time

ALL

Fall Time

ALL

-

Qg

Total Gate Charge

ALL

-

(Gate-Source Plus Gate-Drain)

Test Conditions
VGS = OV
10 = 2S0,.A

V

VOS

= VGS. 10

= 250~A

= Max. Rating. VGS = OV

VGS = 10V.10 = 0.5A
VOS

> 1010n) x ROS(on) max.' 10 = 0.6A

VGS = OV. VOS

= 25V. I = 1.0 MHz

See Fig. 9

40

ns

VOO ~ 0.5 BVOSS. 10 = 0.6A. Zo

70

ns

See Fig. 16

SO

100

ns

35

70

ns

(MOSFET switching times are essentially
independent of operating temperature.)

11

15

nC

Gate-Source Charge

ALL

-

6.0

-

nC

Qgd

Gate-Drain ("Miller") Charge

ALL

-

S.O

-

nC

LO

Internal Drain Inductance

ALL

-

4.0

-

nH

VGS

= 10V.10 = 5.2A. VOS = O.B Max. Rating.

See Fig. 17 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
drain lead, 2.0mm

(0.08 in.) Irom
package to center of
die.

Internal Source Inductance

ALL

-

= 5011

20
35

Oss

LS

= OV. T C = 125°C

> 10(on) x ROS(on) max.' VGS = 10V

-

6.0

nH

Measured from the
source lead, 2.0mm

(0.08 in.) Irom
package to source
bonding pad.

Modilied MOSFET
symbol showing the
internal device
inductances .

.@)

THERMAL RESISTANCE
RthJA

Junction-ta-Ambient

UNITROOE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

ALL

120

4-227

K/W

Free Air Operation

PRINTED IN U.S A

•

UFND120

UFND123

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
ISM

Continuous Source Current
IBody Diode)

-

UFND120
UFND123

Pulse Source Current (Body Diode)

UFND120

-

UFND123

®

-

1.3

A

1.1

A

-

5.2

A

-

4.4

A

-

2.5

V

TC - 25°C,IS - 1.3A, VGS - OV

2.3

V

TC - 25°C, IS - 1.1A, VGS - OV

-

ns

TJ

~C

TJ

Modified MOSFET symbol
showing the integral
reverse P~N junction rectifier.

4Ef.

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

ALL

-

280

ORR

Reverse Recovered Charge

ALL

-

1.6

ton

Forward Turn-on Time

ALL

Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by LS

UFND120
UFND123

Fig. 1 - Typical Output Characteristics

Fig;
2D

0

flOV

9~-

r-

Vos> 'Olon) II:

8

I
I

I--

5~-

iJ. /

J

Ty2501~
TJ = ~5S01"i

l/) rY

rlJ

hY

•

r-

II,

T'1 12'OCl'---

I-"

.~-- I-10
20
30
40
Vos. DRAIN TO·SOUR{'E VOLTAGE (VOLTS)

3-

/1

•

8

'r-

r- ROS(on) 1ItIJI.

,

8V- I VGS''1-

2 - Typical Transfer Characteristics

~~~pu~ETESI

lOps PULSE TEST

1/

Fig.

+ lO'

(2iPulse Test: Pulse width .. 300~s, Duty Cycle .. 2%.

CllTJ = 25°C to 150°C.

"
,

= 150°C, IF = 1.3A, dlF/dt = 100A/~s
= 150 oC,IF = 1.3A, dlF/dt = 100A/~s

,

511

.

~~

"

10

VGS. GATE·l0.s0URCE VOLTAGE (VOLTS)

Fig. 4 - Maximum Saf. Operating Area

Typical Saturation Characteristics
10

0

8

,

8o~.JpiJlJTEST I--- iiY.l
7/V" .I...............

-I--

II.
///
Vh ;.......-

,
4

ll'

, If/

JV

~

1.0

I

D.'

vGs·,Ii-

--

0.2

I

0.1

I

~;~

0.05

'CI

f-5V

0.02

I

'r

[UFNI

0.01
0.005

•

Vas. DRAIN·IO-SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. 1617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

p1i

2

/, ';':/1
~

of:
~u

.1

10

120,
50

VDS DRAIN·TO.sOURCE VOLTAGE (VOL TSI

4·228

PRINTED IN U.S A

UFND120

/'

3

z
<
~

Z

/ 'V

'/

I

2

I --r

TJ'" 25°C

5

TJ"125 0C

l-

0

5
r-TJ'" 150°C

Vas> lo(on) x ROSlon) max.

80T PULS jTEST

TJ=150 0 C_

'1

711

2

I

I

0
12
16
10. DRAIN CURRENT (AMPERES}

~

...,. I""'"

,

2

,/

~, I)
"

2

TJ~-550L '=
_f.- I-"J.",!_ f=

,
/

II

Q
Q

V-

II

Fig. 6 - Tvpical Source-Drain Diode Forward Voltage

Fig. 5 - Tvpical Transconductance VI. Drain Current

4

UFND123

~

TJ'" 25°C

20
VSQ. SOURCE TO-DRAIN VOLTAGE (VOL lSI

Fig. 8 - Normalized On-Resistance VI. Temperature

Fig. 7 - Breakdown Voltage V,. Temperature

•

1.2

22
u

•
•

".~

...... i-"""

"..

~

~

1.8

~~ 1.4
g~

*~

1.0

•

~

06

-40

/

V

00

'",.

•

V

"?~

."...
./

OJ

~

z

~

~

40

80

120

02

160

TJ, JUNCTION TEMPERATURE (DC)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

,/

./

..............

vGS

I......
-40

=

lOV

'r06~
40

80

120

160

TJ,JUNCTION TEMPERATURE (DC)

4-229

PRINTED IN U S.A

UFND120 UFND123

Fig. 9 - Typical Capacitance Vs. Drain-to.source Voltage

Fig. 10 - Typical Gate Charge VI. Gate-to-Source Voltage

1000

20

I JGs·J

,I

800

JJ

'i' IMHtZ

Cja '"

ell + Cgd. Cds SHORTED -

erst· CgeI

~
w
!i1

e _c",+ e"c.o

........

~

§"

-

&00

\

400

u'

\
200

\

" i'-- .......

011

CIII+Cgd
-CdI+Cgd

-

i

-

"'

I

u

~
~

I

'"

so

12

-

~VG!"DV

~

"

z

~

0

2::: ....
....... ........ t-....
......

0.9

UFNDl3)

r--... ['.t-....

.... ~ r-....

0-

w

z

D.'

W

0

~
02

20

16

Fig. 12 - Maximum Drain Current VI. Case Temperature

~

z

I--

Qg. TOTAL GATE CHARGE (nCI

~

~

~~~ ~~:T

CIRCUITSEE FIGURE 11

s

I
~
~

j

/

0.8

u

II

~

!f

/'"

I'--- ~ ~
~V

4~

""

e;a

Fig. 11 - Typical On-Resistance Vs. Drain Current

~

10

0

:;

.0

0.6

Vas= SOV

I
I- VoS -1lIN, UFND13)

~> -

eta

10
20
30
Vas- DRAIN-TO-SOURCE VOLTAGE (VOLTS)

z

VDs l'20V
15

----~

~

)

~

u

1/

z O.S

~

"- ~

~

-"'--;';;-20V

j -~DS(,"I

UFNDl23.........

~

.P

'\\

O.3

IF _ f---

10

'a.

30
DRAIN CURRENT (AMPERES)

20

0
25

'0

,

\\

MEASURED WITH CURRE.tulSE
2 0 ~s DURATION INITIAL TJ = 25 0 C. (HEATING
EFFECT OF 2 Ops PULSE IS MINIMAU

50

15

100

150

lA, AMBIENT TEMPERATURE (OCI

Fig. 13 - Power VI. Temperature Derating Curve
14

RthL

1.2

E 1.0
0

illQ

0.8

"

0.6

~

~

~

0.'
0.2

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

lJKIW-1-

-......,

"z

~

~

~

" "'-I'"

&0
80
100
'0
lA, AMBIENT TEMPERATURE (DCI

4-230

120

"- i'.
140

PRINTED IN U.S.A.

UFND120

Fig. 14 - Clamped Inductive Test Circuit

UFND123

II

Fig. 15 - Clamped Inductive Waveforms
EC

VARY tp TO OBTAIN
REQUIRED PEAK 'L

V G S . R OUT

'l ...--o---.................-'
E1 = 0.5 BVOSS

EC = 0 75 BVOSS

Fig. 16 - Switching TIm. Test Circuit

PULSE

r-----.,
I
GENERATOR

I
I

SOn

L ____ J

r
I

50n

FiO. 17 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

o~·5mA

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

-""''V'.,...-+~'\I\'''-O·VOS
10
10
CURRENT
CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR

4·231

PRINTED IN U.S.A.

POWER MOSFET TRANSISTORS

UFND210
UFND213

200 Volt, 1.5 Ohm
N-Channel

FEATURES
• For Automatic Insertion
• Compact, End Stackable
• Fast Switching
• Low Drive Current
• Easily Paralleled
• No Second Breakdown
• Excellent Temperature Stability

DESCRIPTION
The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RDo(on' and a high transconductance.
The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
When packaged in the low profile, end stackable 4 pin dual·in·line package, the
Unitrode power MOSFET devices can be used in high volume applications where
automatic insertion is a must such as computer circuit boards, telecommunication
equipment, consumer equipment, and printers.

PRODUCT SUMMARY

Part Number

Vos

RDS(on)

10

UFND210

200V

1.50

O.6A

UFND213

150V

2.40

O.45A

MECHANICAL SPECIFICATIONS

D

CO,

UFND210 UFND213

,

,

G

1-I

0.3 (0

01~1 II

0311oom-i

DIL·4

t--

502 (0198)
MAX

0)

."

162(OlOOi

' 1010ni x ROSlonl max.' VGS = 10V

VGS

= 10V, 10 = 0.3A

VOS

> 1010ni x ROSlonl max.' 10 - 0.3A

VGS

= OV, VOS = 25V, I = 1.0 MHz

11

Qfs

Forward Transconductance

Ciss

Input Capacitance

All

-

135

150

pF

Coss

Output Capacitance

All

--

60

80

pF
pF

erss

= 25Ol'A
= VGS, 10 = 25Ol'A

4.0

IGSS

Source Leakage Reverse

Test Conditions

= OV

See Fig. 9

Reverse Transfer Capacitance

All

-

16

25

tdlonl
tr

Turn-On Delay Time

All

-

8.0

15

ns

VOO

Rise Time

All

15

25

ns

See Fig. 16

tdloffl
tf

Turn-Off Delay Time

ALL

-

10

15

ns

Fall Time

All

-

8.0

15

ns

(MOSFET switching times are essentially
Independent of operating temperature.)

Og

Total Gate Charge
(Gate-Source Plus Gate-Drain)

All

-

5.0

7.5

nC

Ogs

Gate-Source Charge

All

-

2.0

-

nC

°gd

Gate-Drain ("Miller") Charge

All

-.

3.0

-

nC

LO

Internal Drain Inductance

ALL

-

4.0

-

nH

VGS

2

0.5 BVOSS, 10

= 10V, 10 = 2.5A, VOS = 0.8 Max. Rating.

See Fig. 17 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
drain lead, 2.0mm

10.08 in.1 from
package to center of
die .

lS

Internal Source Inductance

All

-

6.0

-

nH

= 0.3A, Zo = 501l

Measured from the
source lead, 2.0mm

10.08 in.1 Irom
package to source
bonding pad.

Modified MOSFET
symbol showing the
internal device
inductances.

.@)

THERMAL RESISTANCE
RthJA

Junction-to-Ambient

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEl. 16171 861-6540
TWX 1710) 326-6509 • TELEX 95-1064

ALL

120

4-233

K/W

Free Air Operation

PRINTED IN U.S A

•

UFND210 UFND213

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
(Body Diode)

IS
ISM

>

·Pulse Source Current (Body Diode)

®

UFND210

-

UFNb213

-

UFN0210

-

UFND213

-

UFND210

.-

UFND213

-

0.6

A

0.45

A

2.5
1.8
2.0

V

Diode Forward Voltage

trr

Reverse Recovery Time

ALL

ORR

Reverse Recovered Charge

ALL

-

Forward' Turn-on Time

ALL

Intrinsic turn-on time IS

ton

=

reverse

1.8

V

-

ns

TJ

290
2.0

~~

9V
8V

f--

r-lIAlPU~ETE

~

TJ.,125DC

T

VGS'7V-

~

i

I
TJ'" 25°C

'.D

-

I

~

TJ"' -55°C

~

TEST
...5z 3.D r- 80V~S >PULSE
101(on) x ~OS{on) mlx. 1

!! 3.0

~

w

=
=

5~- -

~

z

~

6

!?
1.0

2.D

!?
,D

4~ _ _

o

20

'0

.

30

~

D
D

.D

8~

IJSPJSE

40

9V
8V

~

3."

~~

=
=
~

u

~

20

!?
1.0

~

"D

~

~

I.D

~~

I

D.2

...

i

1-

z
~
_"

J_

,

10ms

DD5

lOOms

0.02
D.D

,

TJ'" ISOoC MAX

I

SINGLE PULSE

DC

UFND213

0.002
D.DD

5D

Vos. DRAIN·TQ-SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

D.

0.005

5~_

4.D

'm.

UFND213

6

3.D

100..

D.5

.......

2.D

'D..

UFND213
UFND210

I.D

~GS'7r-

~V
~ .,......

IJ

II
'1/

.!!l'~O

~

'"'JJ
'" 1"1

Fig_ 4 - Maximum Safe Operating Are.

TElT
'OV

/I V

VGS, GA.TE·TD·SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

_

/

IJ
~

'D

Vas. QRAIN·TO·SQURCE VOLTAGE (VOLTS)

5.0

LO'

I

~

u

1-

z 2.0

o

+

Fig. 2 - Typical Transfer Characteristics.

.",

z

= 150°C, IF = 0.6A, dlF/dt = 100A/~s

TJ - 150°C, IF - 0.6A, dlF/dt - l00A/"s
"C
negligible. Turn-on speed is substantially controlled by LS

'.D

4.0

...5z

junction rectifier.

TA ,25°C, IS - 0.6A, VGS - OV
TA = 25°C, IS - 0.45A, VGS - OV

Fig. 1 - Typical Output Characteristics

~

P~N

@PulseTest: Pulse width .. 300,,5, Duty Cycle .. 2%.

25°C to 150°C.

5.0

~

showing the integral

A
A·

VSD

 "Olon) ~ RDS(onllltl~.

~

~

~

1/

'/

2.8

I

2.'

, .,.....-

t; 2.0

8

10

r-! ~ pula n!T

3.2

II

Fig. 6 - Typical Sourca·Drain Diode Forward Voltag.

16

l/1/

1.2

0.8
0.'

t ~ f.-

II-'

o
o

TJ =-550C

TJ I'25.d

,..--

TJI"25'~

-

_.

TJa t50 0 e

'--

h J • 125'C

~

I

1

1.0

2.0

3.0

'.0

1.0
2.0
3.0
4.0
VSQ. SOURCE-TO·ORAIN VOLTAGE (VOLTSI

5.0

10. DRAIN CURRENT (AMPERES)

Fig. 7 - Breakdown Voltage VI. Temperature

5.0

Fig. 8 - Normalized On·R.sistance Vs. Tamperature

1.2 5
2. 2

1/

5

1/ ~

8

/

,/
/

~

V

l/

./

V

I......
0.75
-40

V

V

./

0.2
40
80
120
TJ,JUNCTION TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-40

160

V"

V
vGs·JOY

'r03~

40

80

120

180

TJ, JUNCTION TEMPERATURE (DC)

4·235

PRINTED IN U.S.A

UFND210 UFND213

Fig. 9 - Typical Capacitance VI. Drain·to.source Voltage

sao

20

I

JGs.ol
I 'i I MH,'I_I
eo. • e.. + e". e",SHORTEO-

400

era· cget

l

.... Cds + c..

,

~

i-- VDS • l6OV; Uffill210

-

10

II
J

5

I

~
40

30

10" 2.5A

FOR TEST CIRCUIT-

SEj FIGU(E 111

/

e",

20

50

Fig. 11 - Typical On;i:celistance VI. Drain Current
RaSlon) MEASURED WITH CURRENT PULSE OF
2.0"sDURATION INITIAL TJ=25 0 C. (HEATING

EFFEeT OF 2.0 '" PULSE IS MIj'MAl.i

10

Fig. 12 - Maximum Drain Currant VI. Case Temperatura

r-r-

0.6

.........

['-....

0.5

J

.
z

- -

..........
........ ~ffi1l210

""""'" r-....

1
VGS= lOY

........

0.3

.....
........

UfNIl213

~

"z

u

~~ov

....... V

r-

Qg. TOTAL GATE CHARGE InC)

Vos. DRAIN·TO·SOURCE VOLTAGE (VOLTS)

I

~

A~

1
eL

.........

A~ ~

Vorl01v ........

I

1\ ['.:

\

v~s =4JV

-

eoa=c.+ ~
+c.c.

1\
100

Fig. 10 - Typical Gate Charge VI. Gata·to.source Voltage

"

.....

" ""
........

~ 0.2

~

o. I

~

50

10
10. DRAIN CURRENT (AMPERES)

75

100

125

150

TA, AMBIENT TEMPERATURE (DC)

Fig. 13 - Power VI. Temperatura Derating Curve
14

I

R,JA<120 KIW- f-

2

'" "'
"-

,

~

~

O. 2

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

'" "

40
60
80
100
120
lA. AMBIENT TEMPERATURE (DC)

4·236

"-

140

PRINTED IN U.S.A.

UFND210

UFND213

•

Fig. 15 - Clamped Inductive Waveforms

Fig. 14 - Clamped Inductiva Tast Circuit

EC
VARY tp TO OBTAIN
REDUIRED PEAK Il

VGs~R

OUT

,,+---0---.....-"11,.,........
El = 0.5 BVOSS

EC = 0.75 BVOSS

Fig. 16 - Switching Tima Tast Circuit

v,
PULSE

r-----..,
GENERATOR

I

I
I
L _

SOu

I
I

___ .J

-

''--~TO

SCOPE

50n

Fig. 17 - Gate Charge Tast Circuit
+Vos
(ISOLATED
SUPPLY)

-

o~:5mA

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

--'\i'\l'l.r--+--''VII'v-o-Vos
'G

'0

CURRENT
SAMPLING
RESISTOR

CURRENT
SAMPLING
RESISTOR

4-237

PRINTED IN U.S.A

UFNF110
UFNFlll
UFNFl12
UFNFl13

POWER MOSFET TRANSISTORS
100 Volt, 0.60 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available,
This efficient design achieves a very low Ros.on• and a high transconductance,

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Brea kdown
Excellent Temperature Stability

,

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability,
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers,

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFNF110

lOOV

0.60

3.5A

UFNF111

60V

0.60

3.5A

UFNF112

lOOV

0.80

3.0A

UFNF113

60V

0.80

3.0A

MECHANICAL SPECIFICATIONS
UFNFllO UFNFlll UFNF112 UFNF113

TO-20SAD (TO-39)

50810.20}

~:~I~~M

OIA

3PlA.CES

All Dimensions in Millimeters and {lnchesl

[1J]
4/83

4-238

_UNITRODE

UFNFllO UFNFlll

UFNF112 UFNF113

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNF110

UFNF111

UFNF113

Units

VOS

Drain - Source Voltage (j)

100

60

100

60

V

VOGR
10@TC-25°C

Drain - Gate Voltage (RGS = 1 Mil) (j)

100

60

100

60

V

Continuous Drain Current

3.5

3.5

3.0

3.0

A

10M

Pulsed Drain Current @

14

14

12

12

VGS
Po@TC=25°C

Gate ~ Source Voltage
Max. Power Dissipation

Inductive Current, Clamped

1

14

Lead Temperature

V

15

(See Fig. 14)

0.12

(See Fig. 14)

W
WIK

(See Fig. 15 and 16) L = 100~H
14
I
12

Operating Junction and
Storage Temperature Range

TJ
T stg

A

±20

Linear Derating Factor

ILM

UFNF112

I

A

12

-55to 150

·C

300 (0.063 in. (1.6mm) Irom case lor lOs)

·C

ELECTRICAL CHARACTERISTICS@TC = 25·C (Un)ess otherwise specified)
Type

Parameter

BVOSS

Drain - Source Breakdown Voltage

Min.

Typ.

Max.

Units

UFNFll0
UFNF112

100

-

-

V

Test Conditions
VGS

UFNF111
UFNF113

60

-

-

V

10

= OV

= 250l'A

ALL

2.0

-

4.0

V

IGSS

Gate-Source Leakage Forward

ALL

-

100

nA

VGS - 20V

ALL

-

-100

V GS(th) Gate Threshold Voltage
IGSS

Gate-Source Leakage Reverse

lOSS

Zero Gate Voltage Drain Current

10(on)

On-State Drain Current

®

ROS(on) Static Drain-Source On-State
Resistance ®

®

= VGS' 10 =

25Ol'A

= -20V

nA

VGS

250

I'A

VOS - Max. Rating, VGS - OV
VOS

-

-

1000

I'A

UFNF110
UFNF111

3.5

-

-

A

UFNF112
UFNFl13

3.0

-

-

A

UFNF110
UFNF111

-

0.5

0.6

Il

UFNF112
UFNF113

-

0.6

O.S

Il

ALL

VOS

= Max. RatingxO,S,VGS = OV,TC = 125·C

VOS ) 10(on) x ROS(on) max.' V GS = 10V

VGS

9ls

Forward Transconductance

ALL

1.0

1.5

-

S(l.l)

Ciss

Input Capacitance

ALL

-

135

200

pF

Coss

Output Capacitance

ALL

-

SO

100

pF

C rss

Reverse Transfer Capacitance

ALL

-

20

25

pF

td(on)

Turn-On Delay Time

ALL

20

ns

Rise Time

ALL

-

10

tr

15

25

n.

= 10V,I0 = 1.5A

V OS ) 10(on) x ROS(on) max.' 10 - 1. 5A
VGS = OV, VOS = 25V, 1= 1.0 MHz
See Fig. 10
VOO = 0.5 BVOSS,IO
See Fig. 17

= 1 .SA, Zo =

500

td(ofl)

Turn-Off Delay Time

ALL

25

ns

(MOSFET switching times are essentially

Fall Time

ALL

-

15

tl

10

20

ns

independent of operating temperature.)

Qg

Total Gate Charge

ALL

-

5.0

7.5

nC

IGate-Source Pius Gate·Drain)

Qgs

Gate-Source Charge

ALL

-

2.0

-

nC

Qgd

Gate-Drain ("Miller") Charge

ALL

-

3.0

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

V GS = 10V, 10

= S.OA, VOS -

Measured from the

Modified MOSFET

drain lead, 5 mm (0.2

symbol showing the
internal device
inductances .

in.) from header to
center of die.

LS

Internal Source Inductance

ALL

-

15

-

nH

O.S Max. Rating.

See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the

source lead, 5mm (0.2
in.) from header to
source bonding pad.

.@)

THERMAL RESISTANCE
RthJC

Junction-to·Case
Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-239

PRINTED IN U.S.A

•

UFNFllO UFNFlll

UFNF1l2 UFNFl13

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
(Body Diodel

Pulse Source Current
(Body Diode! @

Diode Forward Voltage ®

-

-

3.5

A.

UFNF112
UFNF113

-

-

3.0

A

UFNFll0
UFNFlll

-

-

14

A

UFNF112
UFNF113

-

-

12

A

UFNFll0
UFNFlll

-

-

2.5

V

UFNF112
UFNF113

-

-

2.0

V

TC

ALL

-

200

-

ns

T J = 150·C,IF - ;j.bA,dIF/dt - 100A/"s
TJ = 150·C,IF = 3.5A,dI F/dt - 100A/"s

t"
QRR

Reverse Recovery Time
Reverse Recovered Charge

ALL

ton

Forward Turn-on Time

ALL

 'O(on) x
6.4
ROS(on) mell.

I
ay= F=

)

1.6

i

/"

0.8
~

o

o

50

,

I /

')

~
4

10

VGS. GATHD·SDURCE VOLTAGE IVOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
100

8.0
1.2

I V

- L ,JLSf TElT
loA'

~

......
"

U

~<

~V

z

w
u

4.0

z

3.2

E

Z.'

~

~ f/'

~V

~~~

16
0.8

ZO UFNFll0,1

~
~8r~ r-~~

~

I'

0.5

..... VGS·1V-

I

6~-

I

5~-

4~_

I...

-

~~,2.3

10~s

UFNF110,;

100,u.s

w

~

~

Z

I

UFNF112,3

z

-

~
1.0
<0
.;

-

-

-

10

z

~

1.0 1.5
Z.O 2.5 3.0 3.5 4.0 4.\
VDS. DRAIN·TD·SDURCE VOLTAGE IVDLTSI

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861·6540
TWX (710) 326·6509 • TELEX 95·1064

~

0.\

=

='TC'Z50C
TJ' 110°C MAX.
_ R,hJC • B.33 KiW

O.Z -:-t~GL[PULSE
O. 1
1.0

\.0

I

LUI

1m,

"'

lOT'
lOOms

UFNFll1,3
UFNF110,2
10

VDS.

4·240

-

OPERATiON IN THIS
AREA is LIMITED
BV ROS(on)

~

./.r~
9V V
~

6.4
5.6

+i-·Hi

50

ZO

DRAIN.TQ~DURCE

DCI
\0

100

I
200

500

VOLTAGE IVOLTSI

PRINTED IN U.S.A

UFNFllO UFNFlll UFNF112 UFNF1l3

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration
I

J

~

f-D' 0.5

i-

0.1

r-

0.1

•

NOTES

lf1.JL
~2~

=,0.05
=:0.02

1. DUTY FACTOR, 0 =

~

.....,.

:~

SINGLE PULSE (TRANSiENT

2. PER UNIT BASE' R,hJC • B.33 DEG CIW

IirERMiliMPEiAiTI I

3. TJM - Te'" POM ZthJc(t),

10.4

10.3

10.2

10-1

1.0

10

'I, SDUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

..

0

3.6

~
~

Fig. 7 - Typical Source·Drain Diode Forward Voltage
10

r-J

loll PUJSE

TEsl

vIas > I~(on) ~ ROSlon} ma~.

3.2

/

/1/'

2.8

iii
~

2.4

R~

20

.... 1.6
~
~ 1.2

~

0.8

0.'

o

I

TJ =-550C

./~

IV

/ II

..,.

TJ= 125 0 C

c-'

TJ'" 150 0 C

I

TJ = 25°C

I

f

I' 1

I

0.8

16

I

TJ= 250 C

If.V
o

I

2.'
32 '.0
'.B 5.6
'0. DRAIN CURRENT lAMPE RES)

6.'

01
7.2

80

o

I

II
0.2

0.4

II
06

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VSQ. SOURCE-TO-DRAIN VOL rAGE (VOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On·Resistance VI. Temperature
2.50

1.2 5

2.25

1.20

z

./
",

V

./

,...-

~

2.00

~

w

:;

Zw

V

1.50

o~

g!

",~

",Z
0-

0.75
0.50

0

~

.20

./

1.00

....

Z

~

-40

./

w~

u< 1.25

~

0.7~0

./

1.75

-

....
",0

20

40

60

80

100

120

V

V
./
VGS',0V
10'" 15A

0.25

0-60

140

-40

-20

20

40

r'

I

60

BO

100

120

140

TJ • JUNCTION TEMPERATURE (DC)

TJ• JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEl. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

...... f.oo"""

V

l/

4-241

PRINTED IN USA

UFNFllO UFNFlll

Fig. 11 - Typical Gate Charge Vs. Gate·to-Source Voltage

Fig., 10 - Typical Capacitance Vs. Drain·to-Source Voltage
500

I
I

400

ZO
JGs.ol
f·111HI

Cill • C. + c",.
Cra 'C",

~
~

l!

5;f
:su

c... SHORTED

t

C_.Cd·+~..

300

-Ccts+ C...

zaG

100

1\

\ "-

..........

VpS;:5~V ...........

w

'"~

VOS' II1I'I. UFNFll0. 112

r-

/~

0'

>

w

10

u

~

I

6

'~" ,

1/

w

:g

>

C~

/

10
20
40
30
Vos. ORAIN·TO.soURCE VOLTAGE IVOLTSI

~V

>"

ILL

~

0

COlI

\

IS

~

cL
~

v~S' z!v "-

~

-

I

t\

UFNF1l2 UFNF1l3

I.

"0' BA
FOR TESTCIRCUIT
Si E FIGiRE

"i

50

f--10

ag. TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On·Resistance Vs. Drain Current

Fig. 13 - Maximum Drain Current VI. Case Temperature

2,0

:.g~Wu~~~:E~N~~J:LC~JR.Ris~1,P~~~!~~G
EFFECT OF

2'1.'

PUL~E IS MINIMAL.!

-

~

......

Ii:
!!: 3

vis'10V

"...
w

~
~

u

2

z

V

~

~

UFNF112.113

~

VGS'ZOV -

I
10

I--

-......; ~

E

~

-

........ ~~0.111

~

0

r---..t-..
I"- r--... .................

z

I

,

r\

15

o2,

20

~

75

T

tD.DRAIN CURRENT (AMPERES)

100

c. CAse TEMPERATURE (OC)

125

ISO

Fig. 14 - Power Vs. Temperature Derating Curve
ZO

" "r-...
""
!'\..

"-

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

""-'"

40
BO
60
1I1O
TC. CASE TEMPERATURE lOCI

4·242

120

"

140

PRINTED IN U.S.A

UFNF1l0 UFNFlll

Fig. 15 - Clamped Inductive Test Circuit

UFNF1l2

UFNF1l3

..

Fig. 16 - Clamped Inductive Waveforms

VAAV Ip TO OBTAIN
REQUIRED PEAK IL

TO

VGS"~'pL

OUT

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR

r-----.,
:
SOn
I
I ____ ...JI
L

SOn

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

12V
BATTERY

-

oI=n·5IJlA

IG
CURRENT
SHUNT

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-243

":"

10
CURRENT
SHUNT

PRINTED IN U.S A.

POWER MOSFET TRANSISTORS

UFNF120
UFNF121
UFNF122
UFNF123

100 Volt, 0.30 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros'on' and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

UFNF120

100V

0.30n

6.0A

UFNF121

60V

0.30n

6.0A

UFNF122

100V

0.40n

5.0A

UFNF123

60V

0.40n

5.0A

"
*

MECHANICAL SPECIFICATIONS

UFNF120 UFNF121 UFNF122 UFNF123

TO·205AD (T0·39)

"6(00'41

jj""ff([lftf)

.::t2:·~088100351

DRAIN
GATE

SOURCE

508 {O 201

914(0361
_OIA_

r825D\~3125)

046(00181

"'lOOt..

.~t

451101801

J.

430101691

I

18113(0711

1422(0561

Rr

" "(D'"

O""~11S

---.l

~
3 PLACES

All Dimensions

4/83

In

Millimeters and (Inches)

4·244

~UNITRDDE

UFNFl20 UFNFl21

UFNFl22

UFNFl23

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNF120

UFNF121

UFNF122

UFNFl23

Units

100

60

100

60

V

100

60

100

60

V

6.0

6.0

5.0

5.0

A

24

24

20

20

 10(on) x ROS(en) mix.

10

20

50

100

200

500

Vas. ORAtN-TO-SOURCE VOLTAGE (VOLTS)

4-246

PRINTED IN US.'"

UFNFl20

UFNFl21 UFNFl22 UFNFl23

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to.case Vs. Pulse Duration

....z

I

~

!-

1.0

>::>
;:~

05 D·0.5

~t:
~z

~~ .

~~ 0.2

~~

..

~~ 0.1
~

~~ O.OS

clffi

:ErlJL

-~.1

~2-J

=0.05

",'"

=N~

NOTES,

0.2

1. DUTY FACTOR. 0"

-0.02

2"

•

1

0.01
0.02

0.01
10-5

..I--

3. TJM· TC' PDM Z,hJCltl .

10-3

10'"

:~

2. PER UNIT BASE' R'hJC' 6.25 DEG. C/W.

SINGLE PULSE ITRANSIENT
1HERIMA,L "MrED,~~CEI
5

10-2

2

5

10-'

10

1.0

'1. SQUARE WAVE PULSE DURATION ISECONDSI

Fig. 6 - Typical Transconductance Vs. Drain Current

TJ..,L

_f-" -J'25'~-

. /V

l-

lL . . . 1-'

IJ

r/ ; ' -~

Fig. 7 - Typical Source·Drain Diode Forward Voltage

.fi'

=

-=

~

TJ ~ 125,1

10II

I

JI
I

Vos> 'O(onl II ROSlon)

,
I

miX.

aojl'UL~ITEST

I

1.0

20

16

'2

o

2.50

1.20

,/

~6 1.05

,.. "........

~~

:~

~~ 1.00

,.. Vi"'"

1.15

o~

........ "........

g~

;g~

1.00

......... V

::i;

~
~

I

0.80
·20

........ V"

z~

....

~:i 1.25

........ "........

-40

~

./

t;a 1.50

0.85

0.75
·60

~~

Ii

...... "........

::>~

0.90

2.00

~

In

1.10

2.25

..

'"z

1.15

~

°f

Fig. 9 - Normalized On·Resistance VI. Temperature

1.25

~~ 0.95

'TJ- 25

VSD. SOURCE·TO·ORAIN VOLTAGE IVOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

....
..

I

_TJ-150'C

'0. DRAIN CURRENT (AMPERES)

~

"

20
40
60
80 lDO
TJ.JUNCTION TEMPERATURE I'C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 ' TEL. (617) 861·6540
TWX (710) 326·6509 ' TELEX 95·1064

120

140

4·247

0.75

I....... " .
0.50

VGS -10V
'0' 3A

i

0.25
0--60

-441

.20

I

20
40
60
80 100
TJ.JUNCTION TEMPERATURE I'C)

120

140

PRINTED IN U.S.A.

UFNF120 UFNF121

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
1000

I Jos·J
I ' ., .L

Fig. 11 - Typical Gate Charge V,. Gate·to·Source Voltage
20

t·IMH•

IGO

cia • c. + cod. Cds SHORTEO

~

IGO

COlI a CdI+

\

Vos 20V

lil

i

i'..
400

+
~
od

~

\

I

r-.

/

CI

fi

'"

6.0

.........

....

4.8

r---- r-- VGl.IOV

I

12

i'..

.........
......... .....

~

~

0.2

J

-

~~

J

-

16

20

....... UFNFI20. 121

.........

..... ~

, -0

UFNF1~ ~

~

0.4

'1

,

~

.,coco~

RE 8

Fig. 13 - Maximum Drain Currant VI. eale Temperature

~
0.6

SIEE Flr

Qg' TOTAL GATE CHARGE (nt)

0.8

~

~

FOR TEST CIRCUIT

V

50

~

10= IDA

J

J..

Fig. 12 - Typical On·Resistance Vs. Drain Current

'"

UFllFl~. 122 '--., ~
~

10
20
30
40
Vos. ORAIN·TO-SOURCE VOLTAOE (VOLTS)

2

Vos = P/JoI.

r-

I--

I

I\.

\

"

Vos '" sov

Cia

\

y'

200

- ..

5

I--

-Cds+Cgd

~

r--

c'" • cod

i

UFNF122 UFNF123

-

"I~

I--

,,~

Vas' 20V

I

12

10

20

\

I---

I-RDS(onl MEASUREO WITH CURRENT PULSE OF 2.0," DURATION. INITIAL TJ" 25°C. (HEATING
EFFECT OF 2.0 liS PULSE IS MINIMAL.)
.

o

25

40

30

75

50

100

125

150

Te. CASE TEMPERATURE (OC)

'0. ORAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve
20

@

15

"-",.

"\

!z

'\

co

E 10

.!li
co

I

'\

~

20

40

50

50

~

\.

rn

r\
~

TC. CASE TEMPERATURE (OC)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·248

PRINTED IN U.S A.

UFNF120

UFNF121

UFNF122

UFNF123

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit

VARY I, TO DITAIN
REQUIRED PEAK Il

TO
VGS=trt'L

OUT

Fig. 17 - Switching Time Test Circuit

PULSE

r-----'
I
GENERATOR

I
IiOIl
I
IL ____ J I

-'''---~TO SCOPE

IiOIl

Fig. 18 - Gate Charge Test Circuit
+V DS
(ISOLATED
SUPPL VI

-

O~I.~mA

--'\;'V'Ir.....-'VII\,--o
IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-249

-VOS

10

CURRENT
SHUNT

PRINTED IN USA.

POWER MOSFET TRANSISTORS

UFNF130
UFNF131
UFNF132
UFNF133

100 Volt, 0.18 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon, and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

Vos

ROS(on)

10

UFNF130

100V

0.180

8.0A

UFNF131

60V

0.180

8.0A

UFNF132

lOOV

0.250

7.0A

UFNFl33

60V

0.250

7.0A

MECHANICAL SPECIFICATIONS
UFNF130 UFNF131 UFNF132 UFNF133

TO·205AD (TO·39)

*

'~'!:::l;:

j2:; ~088(00351

DRAIN

SOURCE

GATE

508(0201

SI41036)
,-"CIA'"
825(0325)

!t-DlA1~
0.45(01118)

' ' DOl''

In

"r-'

14 22 (~~~I
11

O.53(00211~

4.30(0189)

!I
180)(0111

Rr

--.1

ffilOD1Jl
JPLACES

All Dimensions in Millimeters and (Inches)

4/83

4-250

~UNITRODE

UFNFl30

UFNFl31

UFNFl32

UFNFl33

ABSOLUTE MAXIMUM RATINGS
UFNFl30

UFNF131

UFNFl32

UFNF133

Units

100

60

100

60

V

100

60

100

60

V

Continuous Drain Current

8.0

8.0

7.0

7.0

A

10M

Pulsed Drain Current @

32

32

28

28

VGS
PO@TC=25°C

Gate - Source Voltage

Parameter

 iD(on) ~ ROS(on) rr!.x.

~

VGS'r= ~

r

,

~ !O.uS,JLSETE~T

~"'PU!SETJT _ -

IOVy.:V

16

Fig. 2 - Typical Transfer Characteristics

r---.... '(!J
~V

50

'0

10

Vas. DRAIN·TO-SOUflCE VOLTAGE (VOLTS)

VGS. GATE·TO-SOUReE VOLTAGE (VOLTSI

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
100

10
10 ~I PU LSE TEST

.M /'

10J.

9~" "J ~/

8

8V""-.

~V

A~

6

~"/ /
~ '/

~ :II
A~ / '

2

./

~

..
~

10~'

UFNFI32~\

10 I::::JFM:!o,\

S

100",

I'

UFNFl32,3

~

'i'

w

~
~

........

_5V

~

:>
u

f-'

z

~

E

'1

0.8
1.2
1.6
VDS. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

20

z

,GS'

0.'

f-.=130,1

./

/"

IP
I#'

OPERATION IN THIS
AREA IS LIMITED
BY ROSlon)

50

10i',
1.0
0.5

-TC·25'C
=TJ· 150'e MAX.
_ AthJC • 5.0 KIW

0.2

_,SIN~lE P~\~~ I

111111

0.1
1.0

2.0

4-252

100m~=

DC

UFNF131.3

UFNFl30,2

10
20
50
100 200
VOS. DRAIN·TO.$OURCE VOLTAGE (VOL TSI

500

PRINTED IN U.S A

UFNFl30 UFNFl31

UFNF132 UFNFl33

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

I

•

o· 0.5
NOTES.

3nJL

r-b2
r-O.l

P2~

FO.05
0.02

1. DUTY FACTOR. 0 '"

0.01

..J....+-'

:~

2. PER UNIT BASE" RthJC:: 5 0 OEG. eIW.

""-;,NGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

3 TJM-TC=POMZthJC(tl .

10-4

10-2

10-1

10

1.0

tl. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage

10

.h

~

~

i....

TJ=-55 0C

/I
(,
V

/'

A

z

~.250l

~~

~ ........

2

//

~

B10
z

~

~

TJs 1250C

~TJ.'50ocl

/;""

TJ =25 0 C

I
Vas> 10(on) II ROS(on) max.

I
I I

"(''"'j''''1

I I

10

25

10
15
20
'0. DRAIN CURRENT (AMPERES)

o

05

1.5

1.0

25

2.0

3.0

VSQ. SOURCE·TO·DRAIN VOLTAGE (VOL IS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistanea VI. Temperature

1.25

2.50
225

z

'"
in
~

;""

./

./

0a
ZW

;""

w~

~'"

;""

~~
",z

V

-40

0-

....
z

~

-20

20

40

60

80

100

120

./

1.25

..".

1.00

0.75

,...

.,.".

,/

V

,/

,/
VOS,'0V-

~

I

I

-

10 ·4A

0.50
0.25

o

140

-60

-40

-20

20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE (DC)

TJ,JUNCTION TEMPERATURE (DC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

150

o!::!

~
0.75
-60

1.75

:;

..,.;""
..".

2.00

4-253

PRINTED IN USA

UFNF130 UFNF131

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage

UFNF132

UFNF133

Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage
20

2000

1 ~Gs' J

:

I

1'1 MH,

I

;

I

c;" • Cg, + C.... Cd. SHORTED _

1600

C'" • C....
Coa • Cdl+

\

u

10

"-

r--

~

I

~

ou

.L

c~.

"

UFNF1~, 132~ ~ ~
Jd~

U

"
"'"
~

c!u

\

1\

>

~
~

~
..0

vos - f1J\/,

~

-

~~dl+C",

If"--

~

-

CC~~gd
us ,d

Vos" 20V

15 t---t--- VOS' 50V

10 '18A
FOR TEST CIRCUIT

TFlGr'i

V

'0

10
20
'0
Vos. ORAIN TO SOURCE VOlTAGE {VOL lSI

50

16

24

t---

32

40

Qg' TOTAL GATE CHARGE (nC)

Fig. 13 - Maximum Drain Current V,. Case Temperature

Fig. 12 - Typical On·Resistance VI. Drain Current

10

0.6

I
w
u

R8SI~"6 MEASJREo WITJ CURREN~o PULSE olF

2. ps

0.5

z

~

........

--l"-l"-

1
0 .•

v~s '" lOV

2

"

URATION. INITIAL TJ = 2S C. (HEATING
IS MINIMAl.l
-

I-- EFFECT OF ,.0 '" PULSE

......
~

J"'.. ~'131
f".

W

~

0.3

~

0.2

Z

~

UFjF~ ~

)
V

I

10

vr

'0

~~

"'~~

,
-'OV

0

30

'0

50

25

60

50

'0' DRAIN CURRENT (AMPERES)

75
100
Te. CASE TEMPERATURE (DC)

125

150

Fig. 14 - Power Vs. Temperature Derating Cur.e
0

5

5

"- .......

0

'"

5

0

" ""-

5

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

"-

40
60
80
100
120
Te. CASE TEMPERATURE (DC)

4-254

"r-...
140

PRINT'EO IN U.S.A

UFNFl30 UFNFl31

Fig. 15 - Clamped Inductiv. Test Circuit

UFNFl32 UFNFl33

•

Fig. 16 - Clamped Inductiv. Waveforms

VARY I, TO OBTAIN

iDA·'~uT

VGl·trt,~

--<.....-.-.__-'

' L ...

Fig. 17 - Switching Tim. Test Circuit
ADJUST RL TO OBTAIN

SPECIFIED 10
V;

PULSE

1""-----,
I
GENERATOR

I
I

lOll

-'''---~TO

I
I

SCOPE

L_ _ __ .J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY'

LTI·5

o

-

mA

10
CURRENT
SHUNT

UN'TROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·255

10
":"'

CURRENT
SHUNT

PRINTED IN U.S A.

POWER MOSFET TRANSISTORS

UFNF2'10
UFNF211
UFNF212
UFNF213

200 Volt, 1.5 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros.on. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high· power switching
applications such as switching power supplies, motor controls, and wide· band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

Vos

ROS(on)

10

UFNF210

200V

1.50

2.2A

UFNF211

150V

1.50

2.2A

UFNF212

200V

2.40

1.8A

UFNF213

150V

i40

1.8A

MECHANICAL SPECIFICATIONS
UFNF210 UFNF211

UFNF212 UFNF213

TO·205AD (TO·39)

5081020)

l'

~ !~'~~l

DlA

3 PLACES

All Dimensions in Millimeters and IInches}

OJ]
4/83

4-256

_UNITRDDE

UFNF210 UFNF211

UFNF212 UFNF213

ABSOLUTE MAXIMUM RATINGS
UFNF210

UFNF211

UFNF212

UFNF213

Units

VOS

Drain - Source Vc~tage [)

200

150

200

150

V

VOGR
10@TC=25°C

Drain - Gate Voltage IRGS = 1 Mil) (j)

200

150

200

'150

V

Cont:nuous Drain Current

2.2

2.2

1.B

I.B

A

10M

Pulsed Drain Current @

9.0

9.0

7.5

7.5

VGS
PO@TC=25°C

Gate - Source Voltage

Parameter

Max. Power Dissipation
Linear Derating Factor

I

9.0

Lead Temperature

ELECTRICAL CHARACTERISTICS @ TC

W
W/K

Drain - Source Breakdown Voltage

A

7.5

-55to 150

°C

300 (0.063 in. (1.6mml from case for 10s)

°C

Test Conditions

Type

Min.

Typ.

Max.

Units

UFNF210
UFNF212

200

-

-

V

VGS

UFNF211
UFNF213

150

-

-

V

10

4.0

V

VOS = VGS. 10

100

nA

ALL

2.0

ALL

IGSS

Gate - Source Leakage Reverse

ALL

-

-

-100

nA

VGS

lOSS

Zero Gate Voltage Drain Current

-

-

250

pA

VOS
VOS

1010n)

On-State Drain Current

ALL

@

ROS(on) Static Drain - Source On-State
Resistance ®

®

-

-

1000

pA

UFNF210
UFNF211

2.2

-

-

A

UFNF212
UFNF213

1.B

-

-

A

UFNF210
UFNF211

-

1.0

1.5

(J

UFNF212
UFNF213

-

2.4

(J

= OV

= 250pA

Gate - Source Leakage Forward

VGS(thl Gate Threshold Voltage
IGSS

I

=25·C (Unless otherwise specified)

Parameter

BVOSS

15 ISee Fig. 14)
0.12 ISee Fig. 14)

Operating Junction and
Storage Temperature Range

TJ
T sts

V

ISee Fig. 15 and 16) L = 1DOpH
9.0
I
7.5

Inductive Current, Clamped

ILM

A

±20

= 250pA

VGS - 20V

= -20V
= Max. Rating. V GS = OV
= Max. Rating x O.B, VGS =

OV, TC

VOS ) 10(onl x ROSlon) max.' VGS

VGS = 10V, 10
1.5

~

= 10V

1.25A

Qfs

Forward Transconductance

ALL

O.B

1.3

-

SCU)

Cjss

Input Capacitance

ALL

135

150

pF

Coss

Output Capacitance

ALL

-

60

BO

pF

Crss

Reverse Transfer Capacitance

ALL

-

16

25

pF

-

B.O

15

ns

VOO

15

25

ns

See Fig. 17
(MOSFET switching times are essentially
Independent of operating temperature.)

tdlon)

Turn-On Delay Time

ALL

tr

Rise Time

ALL

td off

Turn-Off Delay Time

ALL

15

ns

Fall Time

ALL

-

10

tf

B.O

15

ns

Og

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

5.0

7.5

nC

Ogs

Gate-Source Charge

ALL

-

2.0

-

nC

°gd

Gate-Drain ("Miller") Charge

ALL

-

3.0

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

VOS ) 1010ni x ROS(on) max.' 10 = 1.25A
VGS = OV, VOS

= 25V, f = 1.0 MHz

See Fig. 10

= 0.5 BVOSS, 10 = 1.25A, Zo

VGS = 10V, 10 =4.5A. VOS = O.BV Max. Rating.

Measured from the
drain lead, 5mm
to center of die.

Internal Source Inductance

ALL

-

15

-

nH

= 5011

See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

(0.2 in.) from header

LS

= 125°C

Measured from the
source lead, 5mm

(0.2 in.) from header
to source bonding

pad.

Modified MOSFET
symbol showing the
internal device
inductances .

.@)

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-to-Ambient

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

Free Air Operation

4-257

PRINTED IN U.S.A.

•

UFNF210 UFNF211

UFNF212 UFNF213

SOURCE.DRAI.4"i)IODE RATINGS AND CHARACtERISTICS
Continuous Source Current
(Body Diode)

IS

Pulse Source Current
(Body Diode) ®

ISM

VSD

Diode Forward Voltage @

UFNF210
UFNF211

-

-

UFNF212
UFNF213

-

UFNF21.0
UFNF211
UFNF212
UFNF213
UFNF210
UFNF211
UFNF212
UFNF213

-

2.2

A

-

1.8

A

-

-

9.0

A

-

-

7.5

A

-

-

2.0

V

Modified MOSFET symbol
showing the integral
reverse P-N junction' rectifier.

.~
TC = 25°C, IS = 2.2A, VGS = OV

-

1.8

V

TC = 25°C, IS = 1.8A, VGS = OV

t"

Reverse Recovery Time

ALL

,.

290

ns

TJ = 150°C, IF = 2.2A,dIFldt =

100A/~s

QRR

Reverse Recovered Charge

ALL

-

2.0

-

~C

TJ = 150°C, IF = 2.2A, dlFldt =

100A/~s

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-dn speed is substantially controlled by lS + LOo

ton
(j)TJ

= 25°C to 150°C.

@PulseTest: Pulse width .. 300~s, Outy Cycle .. 2%.

@RepetitiveRating: Pulse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 2 - Typical Transfer Characteristics

Fig. 1 - Typical Output Characteristics

5.0
4.5

~~

9V
8V

-

-Lp./swl
J

;;;

i
z

2.0

I
TJ"'25 0C

TJ "'-55 0C

~

",.,

:! 3.0
~

25

r-- 80 r PU U;E TES~

I

1.0

'5t- .-..J_,-

0.5

o
o

10

20

Vas. ORAIN·TO:SOURCE VOLTAGE (VOLTS)

Fig.

3 - Typical Saturation Characte.ristics

Fig. 4 - Maximum Safe Operating Area

- !#J.I pulsE TElT
.A

iii

'"

2.0

"
E
1.0

o~
o

~

~

1.0

2 U",!F212.213
~ 1.0
z

~
Q

6

5~_

-

TC'25'C

0.2 -

TJ '" 1500C MAX.

-

RthJC' B.33 K/W

0.05
1.0

5.0

10m
UFNF211. 213
UFNF210. 212'::~

10

20

50

100

lOOms

OC=t=
200

500

VOS. ORAIN·TO-SOURCE VOLTAGE (VOLTS)

Vas. DRAIN·TO-SOURCE VOLTAGE (VOL IS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

1m.

0.1 == SINGLE PULSE==

4~_
'.0

I

l"-

0.5

E

3.0

lOOps

~

.......

2.0

lOps

"

1-

~~

UFNF212, 213

~ 5
,;
UFNF210, 211

~

:! 3.0

~:~I~~~~~NBI~ ~~!So~IREA_

10 UFNF210.211

~~
~GS"Y
~i~~
~V

~

II I II

20

10V
9V
8V

~,

~

10

50

4.0

z

II
'1/

VGS. GATE·lO·SOURCE VOL lAGE (VOLTS)

5.0

i

~

o
o

50

40

30

/)

20

E

1.0

/
1/ V

~rr

VOS> jOlon) x ROS(on) max.

,.,
~

I--

~

J~

I

~
~
~

6r-

~E 1.5

I

~

GS " V - ~

~ 3.5

3.0

TJ' ,125'C
4.0

'.0

l.5

5.0

4-258

PRINTED IN U.S.A.

UFNF210

UFNF211

UFNF212

UFNF213

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

I
II

JlU

•

0=05

NOTES

~

f - 02
f - 0'

~2~

(==0.05
f-'0.02

1 DUTY FACTOR, 0 =

J2.Ir"""

SINGLE PULSE (TRANSIENT

2 PER UNIT BASE" RthJC" 8 33 DEG C/W

ili"iERTiMPEnTII

i--"'1'

!~

3 TJM-TC=POMlthJC(t)

10-2

10

'0

'I,SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Tvpical Transconductance Vs. Drain Current
4.0
3.6

~
~

;a

5

III

fl

I

2

~

2.0

:3

1.6

~

1.2

TJ" -55 DC

..... ~ +-

1/ .,... ~ r0-

~

~

PUlSE TE!l

2.8
2.

:i!

10
jJl

Vas> 10(on) x ROS(on) ma~.

3.2

w
u

z

r- ~

Fig. 7 - TVpical Source·Drain Diode Forward Voltage

0.8
04

J. ~ ~

0

TJ "

25,d

T}.

l25,b

r--- I'

if/

o
o

TJ" 150 a C

5r--

~

TJ }"'C

1

2

,
1.0

2.0

30

4.0

5.0

20

'0

'0. DRAIN CURRENT (AMPERES)

3.0

40

Vso. SOURCE·TO DRAIN VOLTAGE (VOLTS)

Fig. 8 - Breakdown Voltage V•• Temperature

Fig. 9 - Normalized Dn·Resistance VI. Temperature

1.25

2.2

IL.

,.. ~

5

~
./

V

1/
l/

V

..... V

V

V

./

5."

,/
.....

5

I......
0.75
-40

40

80

'20

vas- IOV
''11.'1

0.2

,6(1

40
80
120
TJ, JUNCTION TEMpeRATURE (OCI

TJ, JUNCTION TEMPERATURE (OC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

~

4·259

1611

PRINTED IN USA

UFNF210 UFNF211

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
500

20

1

JGs·ol

I 'i 1 MH,'
'00

C. . .

.lJ

Cg. + Cgd. Cds SHORTED-

era '" Cgd

~
u

300

l

'"::

u

::
5

,

Vor 'oor . . . . 2: ~

-

VOS = 1&IV. UFNF210. 21~

I

1\

100

1\ f'..

\

v!S '40L.,

-

COII"'Cdl+a
p+ ..
-'Cds+Cgd

200

u

UFNF212 UFNF213

.I. ~

1

CI~

-

/

I

....

7

r- ~

-

C",

10
20
30
40
Vas. DRAIN-TO-SOURCE VOLTAGE IVOLTS)

10 :4A

I

FOR TEST CIRCUIT
EE FI~URE

i

/
50

't

I---

4
S
Og. TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On·Resistance Vs. Drain Current

'0

Fig. 13 - Maximum Drain Current Vs, Case Temperature
2. 5

i

RoS(on) MEASURED WITH CURRENT PULSE OF
20

j.I$

DURATION INITIAL TJ = 250&. (HEATING

EFFECT OF 2 0", PULSE IS M'i'MAl

......... ......

I--- 2.0

I""'--- .......
I""'--- r........

J

1
VGS" lOV

5

...........

-

---- V

1

~NF210.211

' - - UFNF212. 213'

....

""-

'"

~ k;:-;ov
O. 5

10

50

75

~

'"

100

I\.

~\

125

'\\,
150

Te. CASE TEMPERATURE (DC)

10. DRAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve
20

""

'" "-

I'..

"- "-

20

40

so

80

100

120

,

"-

140

Te. CASE TEMPEfiATURE (DC)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·260

PRINTED IN U.S A

UFNF210 UFNF211

Fig. 15 - Clamped Inductive Test Circuit

UFNF212

UFNF213

II

Fig. 16 - Clamped Inductive Waveforms

VARY Ip TO OBTAIN
REQUIREOPEAK Il

TO
pL

VGS=!.,J-'

DUT

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR
r------,

I
I
I

L _

!iOn

I
I

50U

_ _ _ ...J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

11V
BATTERY

-

O~5mA

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-261

IG

ID

CURRENT
SHUNT

CURRENT
SHUNT

PRINTED IN USA

POWER MOSFET TRANSISTORS

UFNF220
UFNF221
UFNF222
UFNF223

200 Volt, 0.8 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROS(on' and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

Vos

RDS(on)

ID

UFNF220

200V

0.8n

3.5A

UFNF221

150V

0.8n

3.5A

UFNF222

200V

1.2n

3.0A

UFNF223

150V

1.2n

3.0A

MECHANICAL SPECIFICATIONS
UFNF220 UFNF221 UFNF222 UFNF223

TO-20SAD (TO·39)

~"'~:::3"

ORA.IN

*

SOURCE

GATE

SlIBIO.20)

914(0.36)
_OIA_

045(00181

r8.25D\~32151 !M1O.1.W

~

t,~J,71'
lH~(~;1

REF

o",,~,;S ~

o:momT.
3 PLACES

All Dimensions in Millimeters and (Inches)

4/83

4-262

~UNITRODE

UFNF220

UFNF221

UFNF222 UFNF223

ABSOLUTE MAXIMUM RATINGS
Parameter
Dram - Source Voltage

VOGR

Drain - Gate Voltage IRGS ~ 1 Mill

10@TC~25°C

Continuous Drain Current

10M

Pulsed Dram Current

VGS

Gate - Source Voltage

PD@TC~25°C

UFNF220

UFNF221

UFNF222

UFNF223

Units

200

150

200

150

V

200

150

200

150

V

3.5

3.5

3.0

3.0

A

14

14

12

12

 1010n) x AOSfon)

max.

W
VI

SV

8J

I

-

VGS"'5V

i
,
i

't

"

20
40
80
VOS. DRAIN TO SOURCE VOLTAGE (Val TS)

I
TJ"'125 0C

..4

~
f-TJJ250C
I i'--, '(Jf
TJ"I- 55OC

~V

•

'"

10

VGS. GATE TO SOURCE VOLTAGE (VOLTSI

Fig. 4 - Maximum Safe Operating Area

Fig. 3 - Typical Saturation Characteristics
0
5

4

li~t.
8V

all ... ),ULSE

V

~~~,223'

~

I
p-

3

5

2

,.,.-VGs=5V

o.

'V

If'

100~s

I

UFNF222, 223

,

'I'

I'

I III

Te =250e
C- TJ = 150 0e MAX.
2f- RthJe =6.25 KfW
C- SINGl~ PUlS TIl

"'"

lOOms

,

DCU
UFNF221,223

VDS. DRAIN TO SOURCE VOLTAGE (VOLTSI

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 - TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

0.05

"

I

'O~'

~

5~

/

I.

r-

UFNF220,221

0

I

I

I

~EST Jjs{

OPERATION IN THIS AREA
IS LIMITED BY ROSlon)

ou~;J,J,1

1.0

'0

20

50

'DO

UFNf22I), 222
200

500

VDS. DRAIN·TO·SOURCE VOLTAGE (VOLTS)

4-264

PRINTED IN U.S A

UFNF220 UFNF221

UFNF222 UFNF223

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

....z
fl!

;L

wz
>=>

1-1-

1.0

~~

~

0:0.5

>=~ 0

.&

~~ 0.2

ND

::;~

!~ 0.1

-6.•

~iO.05

-=-0.05

}~

-Q.02

Uw

'"

0.02

}

0.01

ELJL

:0.

~2~

1. DUTY FACTOR, 0 =

~SINGlE PULSE (TRANSIENT

0.01

10-3

3. TJM - TC :: 'OM ZthJC(t).

10-1
10-2
11, SDUARE WAVE PULSE DURATION (SECONDS)

/'

-'"

/

l
.iI
IV

;'

,...

t

J

i--

.S50

~
T,! ",oJ

.0

1.0

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current

TJ

:~

2. PER UNIT BASE· RthJC = 6.25 DEG. elW.

THERMAL IMPEDANCE)
10-5

•

NOTES,

0.2

TJ= 25 0 &

I-"
~

~

,,-

TJ=15D OC_

I#'

~

/;'
f-TJ = 1500 C

'III
I
T

vas> IOlonl x ROSlan) max.

"i"'"TTEf~-

1.0

10
ID. DRAIN CURRENT (AMPERES)

o

TJ = 25 0 C

Vso. SOURCE TO-DRAIN VOLTAGE (VOLTS)

Fig. 9 - Normalized On-Resistance VI. Tamperatur.

Fig. 8 - Breakdown Voltllgll VI. Tampemura
1.25

2.2

/
5

,."., ~

..... '"

8

., ,.".,
5

V

iL"

/

.".
~

~

5

V

V

'"
vGS -.ov

'r

I.....
0.7 5
-40

40

80

.20

0.2

-40

'60

o

40

2A

I

80

.20

'811

TJ.JUNCTIONTEMPERATURE 10C)

TJ. JUNCTION TEMPERATURE (DC)

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326:6509 • TELEX 95-1064

/

/

7

4-265

PRINTED IN U.S A

UFNF220 UFNF221 UFNF222 UFNF223

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
1000

Fig. 11 - Typical Gate Charge V,. Gate-to·Source Voltage
10

J J
1,-' M~'II
G••

I

era" Cgd

"

600

~

400

\

U

100

""'Cds+Cgd

"-

\

\

~
u

=
:>

"""
10

10

40

z

~

=

6
~

~
-"

~

~
~

-- -,../

05

f--

i

.-:- .......

.......
..........
.......

UFNF220. 221

..........

..........

UFNF222. 223
...........

z 2

VGS" 20V

..........

10

i'- ~

"- ~

o

20

15

50

25

75

20

"'"

IS

S
~

z
0

125

"
150

\.

"\

10

=

~
,p

"-~
20

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

100

Te. CASE TEMPERATURE (OC)

Fig. 14 - Power Vs. Temperature Derating Curve

~

........ i'..

1

AOS(on) MEASURED WITH CURRENT PULSE OF
2 Op.s DURATION INITIAL TJ" 250C (HEATING
EFFECT OF 2 0,1.1$ PULSE IS MINIMAL)

Bi
c

........ i"'--

~

E

'a. DRAIN CURRENT (AMPERES)

20

Fig. 13 - Maximum Drain Current Vs. Case Temperature

S 3

J

u

:>

16

"

10

0

I--

Og. TOTAL GATE CHARGE (nC)

-l.

i5

sr

50

VGS:' IOV

t;
'"

IO=1A
FOR TEST CIRCUIT
E FIGtURE Ii

/

~VOl TS)

Fig. 12 - Typical On·Resistance Vs. Drain Current

u

~~

/

30

~~

/

c,.

Vas, DRAIN 10 SOURCE VOLTAGE

I

10

~

t7::

~

ltJ i?'

~

-...

i'-,

r--- Vo. = 16OV. UFNP220, 222

~

!"--

15

IVO"1'00V

~

c,~

~

VO'i 40V
IS

w

I

,

~

-

CgsCgd
COU"'Cdl+Cgs+Cgd

1\

z

'"

;

CIIl .. Cgs + Cgd. Cds SHO RTED-

800

,.

40
80
100
TC, CASt. TEMPERATURE (OC)

4·266

~
120

140

PRINTED IN U S.A

UFNF220 UFNF221

Fig. 15 - Clamped Inductive Test Circuit

UFNF222 UFNF223

Fig. 16 - Clamped Inductive Waveforms

II

VARY 'p TO OBTAIN
FlEQUIAEOPEAK'L

VDS·R

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR
r------,

:
I

50!!

I
I

L ____ .J

50!!

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

or=IT

-

15mA

-.J\,IV'v--+-IV'.tV-o -Vos
IG
10
r.URRENT
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-267

SHUNT

PRINTED IN U.S.A

POWER MOSFET TRANSISTORS

UFNF230
UFNF231
UFNF232
UFNF233

200 Volt, 0.4 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RDSfOn) and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Brea kdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally ·suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFNF230

200V

0.40

5.5A

UFNF231

150V

0.40

5.5A

UFNF232

200V

0.60

4.5A

UFNF233

150V

0.60·

4.5A

MECHANICAL SPECIFICATIONS
UFNF230 UFNF231 UFNF232 UFNF233

TO-20SAD (TO-39)

508 10 20}

~:fm~m

OIA

3 PLACES

All Dimensions in Millimeters and (Inches)

4/83

4-268

~UNITRDDE

UFNF230 UFNF231

UFNF232 UFNF233

ABSOLUTE MAXIMUM RATINGS
UFNF230

UFNF231

UFNF232

UFNF233

Units

200

150

200

150

V

Orain - Gate Voltage IRGS - 1 Mill (j)

200

150

200

150

V

Continuous Drain Current

5.5

5.5

4.5

4.5

A

10M

Pulsed Drain Current @

22

22

18

18

A

VGS
PO@TC - 25'C

Gate - Source Voltage

±20

V

Max. Power Dissipation

25 ISe. Fig. 141

W

0.2 ISee Fig. 141

W/K

Parameter
VOS

Drain -

VOGR
10@TC

~

25'C

Source Voltage

 IO(onJ1x ROS(on) max

/J

I

12

i

VGS "6V

J

I'-I'TJ

"'25 0 C

,

T1 ~ 25°C

z

~

p

5V

A

>-..:. '-{II

TJ ~ -S5"C

~

I'- I'-

I
4Y

./L.

I'- I'-

20

40
60
80
Vos. DRAIN TO SOURCE VOLTAGE (VOLTS)

III

'II

100
VGS. GATE TO-SOURCE VOlTAG£ (VOL lS)

Fig. 3 - Typical Saturation Characteristir.s

Fig, 4 - Maximum Safe Operating Area
lOB

10

.6~

t--

L,,5pJsETElr

J

i~

~K

~ /<
~r/

'I

~

%
9V-

.

~~v

UFNF230,l

'~"

5 UFNF232,3

a

2

z
: 1.0

~

Eo.S F

~

r0.2

t--

0.1

lOOps

II

f-

Q

Vas. DRAIN·TO·SOURCE VOL TAG!; (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10 ,

~ 10

I-"'"'

II'"

UFNF232,3

iii

~v- t--

j"-

I-

20

f-

___ V05,5V-

J

IS LIMITED BY ROS(on)

UFNF230.1

",lOY

""-iv

OPERATION IN THIS AREA

50

~

"

-+

I""

I
lOms

Te - 250 C
1500 C MAX.

TJ"
RthJC • 5.0 KIW
SINGLE PULSE

lOOms

I I

UFNF231,3
1.0

10

20

50

100

DB~F230,2

200

500

Vas. DRAIN·TO-50URCE VOLTAGE (VOLTS)

4·270

PRINTED IN U.S A

UFNF230

UFNF231

UFNF232

UFNF233

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to.ca .. V,. Pulse Duration

I

II

0- 0.5
NOTES:

3:fUL

I-h.2
1-~.1

~ -~

EO.05
O.OZ

0.01

~z~

1.

ITRA~~'~NT

2 PER UNIT BASE ~ RthJC" 5.0 UEG. elW.

"";'NGLE PULSE
THERMAL IMPEDANCE)

.J..-+-""

3. TJM - Te" POM ZlhJC(t)·

10-3

10-4

DUTYFACTOR,O=!~

5
10-2
10-1
tt.SQUARE WAVE PULSE DURATION (SECONDS)

10

1.0

Fig. 7 - Typical Source·Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current
10

~

10 2
TJ" 25 0C

"~
~

TJ'" -55 OC

,./"
V ...... ,.-

"/~ ..-

hV

-

Iff

..
z

TJ ~ 25°C

./

~

~

10

..

TJ -150°C

~
~

Vas> 'Ofon) x RoS/ on) max.

I

I

TJ' ~50C

I I

80,,$PtllSETEST

'0 o

10

'TJ= 150 0 C

/I

z
Tr12SDC

""

to. DRAIN CURRENT (AMPERES)

VSD. SOURCE·TO·DRAIN VOLTAGE (VOL lS)

Fig. 8 - Breakdown Voltage VI. Temperature

Fig. 9 - Normalized On·Re.istance VI. Temperature

125

..'"
~

2.2
1/

11 5

>

~
~S 1.05
......
~~

:~

~I

~~

09 5

V

......
./

/"

........

~

'" --

~

,/
~

/'

z

~.

;

...;'

0.85

;"
075
-40

/

/

40

80

120

0.2

160

-40

vGS .. lOV

'r

40

3A

,

80

120

180

TJ,JUNCTION TEMPERATURE (DC)

TJ. JUNCTION TEMPERATURE (oCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

"

/

4·271

PRINTED IN USA

UFNF230 UFNF231

Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage
2000

1

1600

0

t'" 1 MHz

I

I

1

1

eiss '" Cga" Ggd. Cds SHORTED

Cra '" Gild

"'~
;0
<;
;<
~

VOS'·40V

-

, r ....

-

,,' '"

800

u'

400

,"-

\

.......

........

6OV.UFN~. 232t'----... ~

,"
~

I

~

l\

vos •

-

.... Cds .. Ggd

I
i"-.
vos • 100V

.f-..-

Coss"Cds" cCgsCr
1200

A

C!..

'/

,

~C,.

10

/

ID= 11A
FOR TEST CIRCUIT

V
30

20

,0

40

16

4. 8

f""..~

........

r--..

z
o

6

-

V

....,....

_r-

I--

""-

"
........

UFNF232. 233

I'.... UFNF2~. 231

"-

""-r"\

I'" ~

VGS=2i V

",

2

.~

M'ASU,lo WITH CU'RENT puJ, Of

20liSDURAT10N INITIAL TJ;25 0 C (HEATING
EFFECT OF 2 OilS PULSE IS MINIMAL)

10

40

6.0

vGS" 10V

'05[00'

32

Fig. 13 - Maximum Drain Current Vs. Case Temperature

I

-

24

Qg. TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On-Resistance Vs. Drain Current

2

I--

SjEFlyRE Ii

Vas. DRAIN TO-SOURCE VOLTAGE (VOLTS)

,

UFNF233

Fig. 11 - Tvpical Gate Charge Vs. Gate·to·Source Voltage

v~s'O

I

UFNF232

20

30

40

75

50

10. DRAIN CURRENT (AMPERES)

100

125

150

TC. CASE TEMPERATURE (OC)

Fig. 14 - Power Vs. Tempe"ature Derating Curve
40

35

i"

30

~

~

z

""', '"r"....

2,

0

~

ilic;

20

~

~ "

,p

"

10

1"-

20

UN[TROOE CORPORATION. 5 FORBES ROAD
~EX[NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6,09 • TELEX 95·1064

60
80
100
t20
TC. CASE TEMPFRATURE (OC)

40

4·272

"'"

I'....

140

PRINTED IN U.S.A

UFN230

UFN231

UFN232

UFN233

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit

II

VARY Ip TO oeTAIN

REQUIRED PEAk 'l

VGs·R

'l ....---<>---4--_-'

Fig. 17 - Switching Time Test Circuit

v,

10

Vo

-~-...... TO SCOPE

HiH

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

I':TI,1.5mA

o

-.J\J'V\,~"'-JV\"'-O

'G

CURRENT
SHUNT

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

4·273

-VDS

'0

CURRENT
SHUNT

PRINTED IN USA

UFNF310
UFNF311
UFNF312
UFNF313

POWER MOSFET TRANSISTORS
400 Volt, 3.6 Ohm

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros'anJ and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and audio
amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFNF310

400V

3.60

1.35A

UFNF311

350V

3.60

l.35A

UFNF312

400V

5.00

1.15A

UFNF313

350V

5.00

1.15A

MECHANICAL SPECIFICATIONS
UFNF310 UFNF311 UFNF312 UFNF313

TO-205AD (TO-39)

508(0201

g:~I~Wt1:

01"

1 PLACES

All Dimensions in Millimeters and {lnchesl

4/83

4-274

~UNITRDDE

UFNF310 UFNF311 UFNF312 UFNF313

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNF310

UFNF311

UFNF312

UFNF313

400

350

400

350

V

400

350

400

350

V

1.35

1.35

1.15

1. 15

A

5.5

5.5

4.5

4.5

A

'D(onl x RDS(onl max.' VGS

= 10V

VGS = 10V, 'D = O.BA

9fs

Forward Transconductance

ALL

0.5

1.2

-

5 (III

CisS

Input Capacitance

ALL

-

135

150

pF
pF

VDS

>ID(on) x RDS(on) max.'

ID = O.BA

VGS = OV, VDS = 25V, f = 1.0 MHz

Coss

Output Capacitance

ALL

-

35

50

Crss

Reverse Transfer Capacitance

ALL

-

B.O

15

pF

tdl9nL
tr

Turn-On Delay Time

ALL

-

3.0

10

ns

Rise Time

ALL

20

ns

See Fig. 17

Turn-Off Delay Time

ALL

-

10

td off
tf

5.0

10

ns

Fall Time

ALL

-

B.O

15

ns

(MOSFET switching times are essentially
independent of operating temperature.)

Qg

Total Gate Charge

ALL

-

6.0

7.5

nC

(Gate-Source Plus Gate-Drain)

Qgs

Gate-Source Charge

ALL

-

3.0

-

nC

Qgd

Gate-Drain ("Miller") Charge

ALL

-

3.0

-

nC

LD

Internal Drain Inductance

ALL

-

5.0

-

nH

See Fig. 10
VDD ~ 0.5 BVDSS, ID = O.SA, Zo - 501l

VGS = 10V, ID =2.0A, VDS = O.BV Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
drain lead, 5mm

(0.2 in.) from header
to center of die.

LS

Internal Source Inductance

ALL

-

15

-

nH

Measured from the
source lead, 5mm

(0.2 in.) from header
to source bonding
pad.

Modified MOSFET
symbol showing the
internal device
inductances .

.@)

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-to-Ambient

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

Free Air Operation

4-275

PRINTED IN USA.

•

UFNF310 UFNF311 UFNF312 UFNF313

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
UFNF310
UFNF311

-

-

1.35

A

UFNF312
UFNF313

-

-

1.15

A

UFNF310
UFNF311

-

-

5.5

A

UFNF312
UFNF313

-

-

4.5

A

UFNF310
UFNF311

-

-

1.6

V

TC

UFNF312
UFNF313

-

-

1.5

V

TC

= 25°C, IS = 1.15A, VGS = OV

Reverse Recovery Time

ALL

380

TJ

Reverse Recovered Charge

ALL

-

ns

ORR

-

~C

TJ

= 150 oC,IF = 1.35A,dIF/dl = 100A/~s
= 150°C, IF = 1.35A, dlF/dl = 1OOA/~s

Ion

Forward Tum-on Time

ALL

IntrinsIc turn-on time is negligible. Turn-on speed is substantially controlled by LS + LO-

Continuous Source Current

IS

(Body Diodel

Pulse Source Current

ISM

(Body Diodel @

VSD

'rr
 10(on) II ROS(on) mIX.

~~

t--t-+-t--t-+---,t--t-+-t---I

....
z

1.32

t--t-+-t--t-+--lIt--t-+-t---I

0.88
,........TJ=1250C
0.661--t-+-t--t--II'b-f",,--:T
.J:' 25o~-f--

11.10
t--t-+-t--t---H'II-t--t-+-t---I

0.88

z

E

0.66

E

~

5V

0.44
0.22

""

0.22

,~
o

20

'0

60

80

t--t-+-t--++.,.,..-t--+-+-f----I

.L~

°OL--~~~~~~~~~--~~~~--~'0

100

VGS. GATE·TO·SOURCE VOLTAGE (VOLTSI

Fig. 3 - Tvpical Saturation Characteristics
2.20

1.98 f - -

~JIISPUlISE rest

,..

1.76

i

1.54

i

1.10

z

0.88

il

~

E

/

0.66

~

10~
1v 9"

UFNF310. 311

"
8V
.... VGS·6V-

~
~~

az
~

c

-

5V

V

,'v

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

10~s

10 UFNF312.313

100",

05

,

..

02

01
005

"-

TC=25 0C
TJ" 1500C MAX
RthJC " 8.33 K/W
SINGLE PULSE

IOms
lOOms

1.

~J

200

500

P~~~~11111 ~1~:::::

002

UFNF310, 312

0.0 1

II'

10

10
Vas. DRAIN·la-SOURCE VOLTAGE (VOLTSI

~

UFNF310,311

~
~

~

o
o

it_OPERATION IN THIS AREA
IS LIMITED BY R §jon

UFNF312.313

'"

I

D...
0.22

Fig. 4 - Maximum Safe Operating Area

~

1.32

TJ<-550C

O"r-+-+-+-~h~~~~~-+~

Ves. DRAIN-IO-SOURCE VOLTAGE (VOLlSI

~

,

1.54

~

1.10

o

r-~ .. PU~SE TESl-+-I---:>
,,~

NOTES

~~ fw" 0.2
f~~

mIL

0.2

.. 2

....
....
~:::;

O. 1

0.1

EO.05

~~ 0.05
f=:0.02
Uw

2%

';:'"

j

0.02

•

0-0.5

0.5

1 DUTY FACTOR. 0"

:~

:J:ID?
~t~~~+t
SINGLE PULSE (TRANSIENT1f=:H=:+=~++W=:+=~:j:::H=+1:tt~:j:: 2. PER UNIT BASE" RthJC = 8.33 DEG. elW.
I3.TJM - TC" 'OM Z,hJCItI.

'1ItRMjl tEiAiTI Iii

0.0 1""'"
10-5

10-3

10-4

10-2

1.0

10

II. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source·Drain Diode Forward Voltage

3.0

10

f-4.,PU!SETEJT

2. 7

I

I

Vas> 'O(on) II ROS(on)

~

24

ili

21

5.0

max

!>

§
~

18
15

,/

~ 12

~

£

....
z

TJ = ~550C

!

.,.,
/'

,...
~
/

0.9
06

,,"'"

---

r-

2.0

w

~
~

TJ=

"z

lSDC I--

TJ= 125 DC

U

10

~

r--

~

05

>

-

~

~

'/1

03

o

II

rl

,.

0.2

TJ

-

=

ISOoC
I

~ TJ"!5 0 C

'I
o

022

044 066

088

11

1 32

1 54

1 16

1 98

01

22

o

10

'0. DRAIN CURRENT (AMPERES)

4.0

3.0

20

5.0

VSD, SOURCE TO-CRAIN VOLTAGE (VOL lSI

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig.9 - Normalized On·Resistance VI. Temperature

1.2 5

22
5

V

5

,...V

L

.,., .,.,

v

~

~
~

",...

~

./

-- r--

g

~

~

06

V

./
vGS = IOV

i

'0 0.8A,

L
0.75
-40

40
80
120
TJ, JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

0.2

160

-40

40

80

120

160

TJ, JUNCTION TEMPERATURE jOe)

4-277

PRINTED IN USA

UFNF310 UFNF311 UFNF312 UFNF313

Fig. 11 - Typical Gate Charge Vs. Gate-to·Source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
250

.1

.1

I

2..

ellS "elll + Cgd. Cds SHORTED
C", • C",
200

~. . . Cd.'
\'

- 150

z

;!

~
j

\

100

\

..;

\

50

1
Gs ' 0
I::: 1 MHz

C"C",

e,,' c",'

JBOY

Vas

~Cd.·C",

\

u

10

J

I

Vas = 20DV

C'G

Vas = 320V

I

1

f\

Dj ~

V

~~

'\

"- :--....
I'~
r10

t'--- ~

I

~

/

~'G

10

40

30

/

10 -2A
FOR TEST CIRCUIT

Si E FIG!"E

50

4

'i

-

6

10

a,. TOTAL GATE CHARGE I,CI

Vas. DRAIN-TO SOURCE VOLTAGE (VOLTS)

Fig. 13 - Maximum Drain Current VI. Case Temperature

Fig. 12 - Typical On-Resistance Vs. Drain Current
10

5

VGS"l/
ROSI,,1 MEASUJEO WIT)CURREJ

z

~ 8

PULSEOF20$AsOURATlON

_

~z

EFFECT OF 2 0 /.IS PULSE IS MINIMAL)

INITIAL TJ=25 0 C (HEATING

o

V's

b

.......
11

.........

UFNF312.313

.........

......

UFNF310,311

........

I
/

5

/"
3

,
r-....

........

r---. . . .

vGS=20V_

r-...
i'o..

'" "~~

~

3

....V

,

:\\

o

o

'\~

25

50

10. DRAIN CURRENT (AMPERES)

75

100
Te. t:ASE TEMPERATURE JOCI

125

150

Fig. 14 - Power Vs. Temperature Derating Curve
10

" "'~

""
l'..

"-

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

40

60
80
100
Te. CASE TEMPERATURE (OCI

4-278

"f\.."1'\
120

140

PRINTED IN U S.A

UFNF310 UFNF311 UFNF312 UFNF313

•

Fig. 16 - Clamped Inductive Waveform.

Fig. 15 - Clamped Inductive Test Circuit

EC

VARY tp TO OBTAIN
REQUIRED PEAK Il
V G S - R OUT

IL....- - 6 - - -....._ _--l
El '" 0.5 BVOSS EC = 0.75 SVOSS

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR
r-----.,

I
I
I
L _

son

I

I

___ ...1

son

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

O~·SmA

IG
CURRENT
SAMPLING
RESISTOR

UNITRODE CORPORATION - 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

4-279

.".

10
CURRENT
SAMPLING
RESISTOR

PRINTED IN U.S.A

POWER MOSFET TRANSISTORS

UFNF320
UFNF321
UFNF322
UFNF323

400 Volt, 1.8 Ohm

FEATURES
• Fast Switch i ng
• Low Drive Current
• Ease of Paralleling
• No Second Breakdown
• Excellent Temperature Stability

DESCRIPTION
The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROSlon) and a high transconductance.
The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and audio
amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFNF320

400V

1.80

2.5A

UFNF321

350V

1.80

2.5A

UFNF322

400V

2.50

2.0A

UFNF323

350V

2.50

2.0A

MECHANICAL SPECIFICATIONS
UFNF320 UFNF321 UFNF322 UFNF323

All Oimensions

4/83

In

TO·205AD (TO·39)

Millimeters and (Inches)

4·280

~UNITRODE

UFNF320 UFNF321 UFNF322 UFNF323

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNF320

UFNF321

UFNF322

UFNF323

Units

400

350

400

350

V

400

350

400

350

V

2.5

2.5

2.0

2.0

A

10

10

8.0

8.0

CD

VOS

Drain - Source Voltage

VOGR
10@TC = 25°C

Drain - Gate Voltage IRGS = 1 Mill

10M

Pulsed Drain Current

VGS
PO@TC=25°C

Gate - Source Voltage

CD

Continuous Drain Current

@

Max. Power Dissipation
Linear Derating Factor

J

10

Lead Temperature

ELECTRICAL CHARACTERISTICS @ TC
Parameter

BVOSS

20 ISee Fig. 14)

W

0.161See Fig. 14)

W/K

Operating Junction and
Storage Temperature Range

TJ
T stg

Drain - Source Breakdown Voltage

VGSlth) Gate Threshold Voltage

V

ISee Fig. 15 and 16) L - 100~H
10
I
8.0

Inductive Current, Clamped

ILM

A

±20

A

8.0

I

-55to 150

°C

30010.063 In. 11.6mm) from case for lOs)

°c

= 25°C (Unless otherwise specified)
Type

Min.

Typ.

Max.

Units

UFNF320
UFNF322

400

-

-

V

VGS = OV

UFNF321
UFNF323

350

-

-

V

10 =

ALL

2.0

-

4.0

V

VOS = VGS, 10 = 250~A

100

nA

VGS = 20V

-100

nA

VGS = -20V

Test Conditions

250~A

IGSS

Gate - Source Leakage Forward

ALL

-

IGSS

Gate -

ALL

-

lOSS

Zero Gate Voltage Drain Current

-

-

ALL

250

~A

VOS = Max. Rating, VGS = OV

-

-

1000

~A

VOS = Max. Rating xO.8, VGS - OV, TC - 125°C

UFNF320
UFNF321

2.5

-

-

A

UFNF322
UFNF323

2.0

-

-

A

1010n)

Source Leakage Reverse

On-State Drain Current

®

ROS(on) Static Drain - Source On-State
Resistance ®

®

VOS >1010n) x ROSlon) max.' VGS = 10V

UFNF320
UFNF321

-

1.5

1.8

!l

UFNF322
UFNF323

-

1.8

2.5

!l

VGS = 10V, 10 = 1.25A

9fs

Forward Transconductance

ALL

1.0

2.0

-

SIUI

Ciss

Input Capacitance

ALL

450

600

pF

Coss

Output Capacitance

ALL

100

200

pF

C rss

Reverse Transfer Capacitance

ALL

20

40

pF

tq(onl

Turn-On Delay Time

ALL

-

20

40

ns

VOO = 0.5 BVOSS, 10 = 2.0A, Zo = 5011

tr

Rise Time

ALL

25

50

ns

S.e Fig. 17

t1010n) x ROSlon) max.' 10 - 1.25A
VGS = OV, VOS = 25V, f = 1.0 MHz
See Fig. 10

VGS = 10V, 10 = 5.0A, VDS = 0.8V Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
drain lead, 5mm

10.2 In.) from header
to center of die.

LS

Internal Source Inductance

ALL

-

15

-

nH

Measured from the
source lead, 5mm

10.2 in.) from header
to source bonding

Modified MOSFET
symbol showing the
internal device
inductances .

.@)

pad.

THERMAL RESISTANCE
RthJC

Junction-to-Case

Rh A

Junction-to-Ambient

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Free Air Operation

4-281

PRINTED IN U.S A

•

UFNF320 UFNF321 UFNF322 UFNF323

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
IBody Oiode)

Modified MOSFET symbol
showing the Integral
reverse P-N Junction rectifier.

UFNF320
UFNF321

-

-

2.5

UFNF322
UFNF323

-

-

2.0

A

UFNF320
UFNF321

-

-

10

A

UFNF322
UFNF323

-

-

8.0

A

UFNF320
UFNF321

-

-

1.6

V

TC

UFNF322
UFNF323

-

-

1.5

V

Tc ~ 25°C, IS ~ 2.0A, VGS = OV

t"
ORR

Reverse Recovery Time

ALL

450

-

ns

T J - 150°C, IF - 2.5A, dlF/dt - 1 OOA/~s

Reverse Recovered Charge

ALL

-

3.1

-

~c

TJ = 1 50 oc,IF

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time

IS

Pulse Source Current
IBody Diode) @

ISM

VSD

(j)TJ

Diode Forward Voltage @

= 25°C to 150°C.

A

IS

@PulseTest: Pulse width" 300~s, Duty Cycle" 2%.

'J~(

I~
J

3

1/

IS

~

2.5A, dlF/dt

I

VD~ > 1~(DnIIX RD~(onll max.

,

r--

J
TJ

2

~

III

125°

"'-- rl
"'-- J/

TJ ~ 25°C
TJ" -55°C

~ rt}

'10V

V ::-'.v
12

"

20
VGS, GATE TO SOURCE VOLTAGE (VOLTS)

Vos. DRAIN TO SOURCE VOLTAGE (VOLTS,

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Are.

OPERATION IN THIS AREA

20

8OJ"V+"JT- - f-

UFNF320. 32'
10

5

It IS LIMITED BY RDS(on)

UFNF322, 323

5lv

'"

VGS"!i

"
a
~

~v

10~s

UFNF320, 32'

~

~

3

100~s

UF~F322, 323

1.0

I,..

~

2
4

~
E"

V

10m

02

O. 1
0.0 5

1

4r
200
Vas, DRAIN TO·SQUACE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (7l0) 326-6509 • TELEX 95-1064

00 I

1.0

4-282

TC = 25 0 C
TJ = lS00C MAX.

100m,

RthJC=6.25 K!W
SINGLE PULSE

IIII

002
300

F F

0.5

z

100

+ lO'

rtf
M/
Ii

1

1

60V

~ 100A/~s

,1/

c- 80JSl'uJETEJr

I

r

OV

Fig. 2 - Tvpical Transfer Characteristics

5-

80jJ!PUlSETfST

~

substantially controlled by LS

I

l~

lOV

negligible. Turn-on speed

2.5A, VGS

6

.j,v

VI

~

25°C, IS

VGS "IOV

J

2

I

-

~

@Repetitive Rating: Pulse width limited
by max. junction temperature,
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 1 - Tvpical Output Characteristics

~i,v-

~

OCm
UFN~21, 323

UFNF320. 322

III
5
10 20
50 100 200
500
VDS, DRAIN·TD·SOURCE VOLTAGE (VOLTS)

PRINTED IN USA

UFNF320 UFNF321 UFNF322 UFNF323

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to-Case Vs. Pulse Duration

I

•

0-0.5
NOTES,

El...fL

0.2

~h.l

~2--l

1
=0.05

1. DUTY FACTOR, 0"

-b.02
0.01

-

THERMAllMPEOANCEl
10-4

:~

2. PER UNIT BASE - R'hJC' 6.25 OEG. CIW.

SINGLE PULSE (TRANSIENT

3 TJM - TC z POM ZthJC!t).

10-2

10-3

1.0

10

tl,SQUARE WAve PULSE OURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

I-I--

"l.pu!" TE~T

Fig_ 7 - Typical Source-Drain Diode Forw.ard Voltage

I

I

vcis > 1~(Onll Ras/oni ma)(~
J(

-

TJ = 25°C
TJ=-S50C-

~
V ,./'

/. V i--'"

II. ~

r

-"

,..-r

I-:
~

TJ=2!i oC

'#'

TJ~ 125lc~ t--TJ" 1500 C

:;:;TJ;-150 0 C_

'/

/1
10

TJ = 25°C

I

o

10. DRAIN CURRENT (AMPERESI

VSD. SOURCE TO DRAIN VOLTAGE (VOLTS}

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature

I"

~-

22

,.....-

115

,..V

105

095

./

V
/

i---"'" V

/
,r

i---"'"

/

V
§

~

085

~

06

,;'
015
-40

40
80
120
TJ JUNCTION TEMPERATURE lOCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

02

160

-40

4-283

k"
vGS = lOV

to = 1.25A
I
I

120
40
80
TJ. JUNCTION TEMPERATURE lOCI

160

PRINTED IN U S A<

UFNF320 UFNF321 UFNF322 UFNF323

Fig. 10 - Typical Capacitance V,. Drain·to·Source Voltage
1000

V~S'

1
CIII

800

~

400

\

:\\

/fS+
Ct
go gd

;

-

\

Vos'

~

1
C,a

"

~

10

A~

0

~

"'"
>'"

Co.,

1/

5

I

IO=SA
FOR TEST CIRCUIT

V

C,"

20

10

30

12
0!l_ TOT Al GATE CHARGE (nC)

~o

16

2.5

j
1'1/

2.0

VGS"~

.........

r-...

........

r-..... ...... ........

.........

t- UFNF322.

UFNF320. 321

32~ ......... "-

"-

VGS" lOV

.,1/
i-""""

" ""
......... ~

~

"'~
l'\

,

o.~

1

10

10

Fig. 13 - Maximum Drain Current Vs. Ca.. Temperature

RaS(on) MEASURED WITH CURRENT PULSE OF
2.0IlsDURATION. INITIAL TJ=25 0 C (HEATING
EFFECT OF 2.0 ps PULSE IS MINIMAL)

..V

-

SIEE FljURE 1[8

Vas. DRAIN TO SOURCE VOLTAGE (VOLTS)

Fig. 12 - Typical On·Resistance Vs. Drain Current

~

~

UJ

~

10

i'...

Vas::: 320V

"
iil

i'-- .......
r-

~OOV "--

>

\,

200

voslsov

1~

'"

-

-Cds+Cgd

--

......

t!:

..;

.L -'

f: 1 MHr

eli + Cgd. Cds SHORTED_

Coa .. Cds +

1\

"z

§

20

1

Cm • Cgd

600

w

..

0

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

12

75

~o

10. DRAIN CURRENT (AMPERES)

100

125

150

Te. CASE TEMPERATURE (OC)

Fig. 14 - Power Vs. Temperature Derating Curve
20

'\

1~

S
i!
z
0

~

iii
;5

'"

r\.

"- r\
'\

10

~

~

'\

~

;0

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

40

100
Te. CASE TEMPERATURE (OC)

60

80

4·284

'"

120

i\
140

PRINTED IN U.S.A

UFNF320 UFNF321 UFNF322 UFNF323

Fig. 15 - Clamped Inductive Test Circuit

EC

VARY tp TO OBTAIN
REQUIRED PEAK 'l

VGS.R

•

Fig. 16 - Clamped Inductive Waveforms

OUT

' t ....-

......: ) - _ -...._ .......
£1 ., 0.5 BVOSS

EC = 0.75 BVOSS

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR

r-----.,
I
I
I

L _

son

I

son

I
_ _ _ ...J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

I=-n..5

o

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

-

mA

4-285

IG

10

CURRENT
SAMPLING
RESISTOR

SAMPLING
RESISTOR

CURRENT

PRINTED IN U.S A

POWER MOSFET TRANSISTORS

UFNF330
UFNF331
UFNF332
UFNF333

400 Volt, 1.0 Ohm

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon' and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent T~mperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and audio
amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFNF330

400V

1.00

3.5A

UFNF331

350V

1.00

3.5A

UFNF432

400V

1.50

3.0A

UFNF333

350V

1.50

3.0A

MECHANICAl. SPECIFICATIONS
UFNF330 UFNF331 UFNF332 UFNF333

TO-205AD (TO-39)

50810201

::~:~g~J:

DlA

JPLACES

All Dimensions in Millimeters and (Inches)

4/83

4-286

~UNITRDDE

UFNF330 UFNF331 UFNF332 UFNF333

ABSOLUTE MAXIMUM RATINGS
Parameter
Source Voltage

UFNF330

UFNF331

UFNF332

UFNF333

Units

400

350

400

350

V

400

350

400

350

V

3.5

3.5

3.0

3.0

A

14

14

12

12

A

G)

VOS

Drain -

VOGR
10@TC- 25 ° C

Orain - Gate Voltage IRGS = 1 M{!)
Continuous Drain Current

10M

Pulsed Dram Current

VGS
PO@TC = 25°C

Gate - SourceVoltage

±20

V

Max. Power DISSipation

25 ISee FIg. 14)

W

0.2 ISee Fig. 14)

W/K

CD

@

Linear Derating Factor

ILM

Inductive Current, Clamped

TJ
T stg

Operating Junction and

14

I

ISee FIg. 15 and 16) L = 100/LH
14
I
12

A

12

-55 to 150

°C

30010.063 In. 11.6mm) from case for lOs)

°C

Storage Temperature Range
Lead Temperature

I

ELECTRICAL CHARACTERISTICS @ TC = 25°C (Unless otherwise specified)
Parameter

BVOSS

Drain -

Source Breakdown Voltage

VGSlth) Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

UFNF330
UFNF332

400

-

-

V

UFNF331
UFNF333

350

-

-

V

10 = 250!,A

ALL

2.0

-

4.0

V

VOS = VGS.IO = 250!,A

-

-

100

nA

VGS = 20V

-100

nA

VGS = -20V

250

/LA

VOS = Max. RatIng, VGS = OV

-

1000

!,A

VOS = Max. Rating x 0.8, VGS = OV, TC = 125°C

UFNF330
UFNF331

3.5

-

-

A

UFNF332
UFNF333

3.0

-

-

A

UFNF330
UFNF331

-

0.8

1.0

n

UFNF332
UFNF333

-

1.0

1.5

!l

IGSS

Gate -

Source leakage Forward

ALL

IGSS

Gate -

Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

1010n)

On-State Drain Current

@

ROSlon) Static Drain - Source On-State
Resistance

(g)

®

ALL

VOS > 1010n) x ROSlon) max.' VGS = 10V

VGS = 10V.10 = 2.0A

gfs

Forward Transconductance

ALL

2.0

3.5

-

SIUl

Ciss

Input Capacitance

ALL

-

700

900

pF

Coss

Output Capacitance

ALL

-

150

300

pF

erss

Reverse Transfer Capacitance

ALL

-

40

SO

pF

td on
tr

Turn-On Delay Time

ALL

Rise Time

ALL

tgLatt!.
tf

Turn-Oft Oelay Time

ALL

Fall Time

ALL

-

-

Qg

Total Gate Charge

ALL

-

(Gate-Source Plus Gate-Drain)

ns
ns

See Fig. 17

55

ns

35

ns

(MOSFET switching times are essentially
independent of operating temperature.)

18

30

nC

ALL

-

11

-

nC

Qgd

Gate-Drain ("Miller") Charge

ALL

-

7.0

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

ALL

-

VGS = OV, VOS = 25V, f = 1.0 MHz
See Fig. 10

30

Gate-Source Charge

Internal Source Inductance

VOS> IOJonJ x ROSLon!.max., 10 - 2.0A

35

Qgs

LS

Test Conditions

VGS = OV

15

-

nH

VOO = 175V,10 - 2.0A,Zo - 15!l

VGS = 10V, 10 =7.0A, VOS = O.SV Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
drain lead, 5mm

Modified MOSFET
symbol showing the

10.2 in.) from header

internal device

to center of die .

inductances.

Measured from the
source lead. 5mm

(0.2 in.) from header
to source bonding

pad.

.@)

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-ta-Ambient

UNITRODE CORPORATION· 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

Free Air Operation

4-287

PRINTED IN USA

•

UFNF330 UFNF331 UFNF332 UFNF333

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
IBody Diode)

Pulse Source Current
(Body Diode) @

Diode Forward Voltage @

UFNF330
UFNF331

-

-

3.5

A

UFNF332
UFNF333

-

-

3.0

A

UFNF330
UFNF331

-

-

14

A

UFNF332
UFNF333

-

-

12

A

UFNF330
UFNF331

-

-

1.6

V

UFNF332
UFNF333

-

-

1.5

V

TC

= 25°C, IS = 3.0A, VGS = OV

600

-

ns

TJ

~C

TJ

= 150°C, IF = 3.5A, dlF/dt = 1OOA/~s
= 150°C, IF = 3.5A, dlF/dt = 1OOA/~s

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

~
= 25°C. IS = 3.5A. VGS = OV

TC

t"
QRR

Reverse Recovery Time

ALL

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

IntrinSIC turn-on time IS negligible. Turn-on speed is substantially controlled by LS

4.0

@PulseTest: Pulse width" 300ps, Duty Cycle" 2%.

+ LO'

® Repetitive Rating: Pulse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 1 - Typical Output Characteristics

,KJ

Fig. 2 - Typical Transfer Characteristics

80l/5PULse TEST

VG;"L;;;; = F

801I,PUlSETEST

vas> 'o(on) x RaS(on) max.

5OV'" ..... F---

TJ"+1250C

TJ'''OC""-...
4SV-

-

TJ"'-55ac~

t"-

rh

,

,

1'1

'IV"" """ F"'"
100

150

100

lLt,

300

250

f-./,

rn

vGS. GATnO·SOURCE VOLTAGE (VOLTS)

Vas. DRAIN TO SOURCE VOL rAGE (VOL IS)

Fig. 3 - Typical Saturation Characteristics

Fig.4 - Maximum Safe Operating Are.
OPERATION IN THIS AREA

J.

,I,

JJv
,o~fv

80jil PULSE TEST

o

r--

o

-VGS~50V- )"-"

Jfi$EF.m

5 UFNF330, 331

'{/

I

U~~FJab,IJJl'Z~S LIMITED BY RoS!ooi

2 UFNF332.333

lOps
1111

lOOps

J

1
II'

45V-

r--

,

I
'I

4OV- I-4

10

Vas. DRAIN TO SOURCE VOLTAGE (VOLTS)

UNITROOE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

VoS. ORAIN·TO-SOURCE VOLTAGE (VoLTSI

4-288

PRINTED IN U.S.A

UFNF330 UFNF331 UFNF332 UFNF333

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

...
z

I

~

:L
........

wz

>=>

;::'" 05

~~

.

S~ 0.2
NO

::::i~

0- 0.5

NOTES,

~6.2

m.JL

....

...-:

L~.l

i~ 0.1 =OD5

~2~

C><

~I 0.05

]

1 DUTY FACTOR, 0 = :~

0.02

J~

~

II

1.0

0.01

~'NGLE PULSE ITRAJi'~NT

0,02

0,01
10-5

2. PER UNIT BASE· RthJC '" 5,0 DEG e/W

THERMAllMPEDANCEI

~
10-4

3. TJM - TC " POM ZthJc(t).

10-2

10-3

10

1.0

tl,SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Dram Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage

10

TJ" 25 0C

L

TJ"'·55 OC -

-

...- ; -

f'"

lfi
II V"""

Itr

TJ'" 25 0C

--

.......:: :::::-

'TJ= ISOOC

//

r}" ,2s Jc_

vas> 10(on) K RoSI(on)

!..'"

'">
'"
~

m~x

TJ - !SOOC

"'f

,,
I

I

80"sPULSETEST

10
10

TJ !5 0 C
0

o
VSD. sou RCE TO DRAIN

10. DRAIN CURRENT (AMPERES)

Fig. 8 - Breakdown Voltage Vs. Temperature

va LTAGE (VOL lS)

Fig. 9 - Normalized On-Resistance V•. Temperature

115

22

.,...
C>

115

-

v

~

>

.......... V

,.,

. /V

./

V
/
/'"

..........

./

V
./
015
-40

80
40
120
TJ JUNCTION TEMPERATURE (oCI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

V
VGS

=

lOV

10 i2.OAI

02
160

-40

4-289

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

PRINTED IN USA

UFNF330 UFNF331 UFNF332 UFNF333

Fig. 10 - Typical Capacitance Vs. Drain-to·Source Voltage

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

1000

tGS'

10

J

I I \. 1 M~' I
ellS .. C.. + Cgd. Cds SHORTED f - -

1600

era '" Cgd
~

~

~
,~

COII·,Cds+CIII+Cgd

1200

;!

5

vlOS • abv",
V,oS'l~OV ....

f--

CpC",

800

y'

400

~
~

-

vas" 320V

f--

-,:,Cds+ tgd

~,.

~ C'SS
~

~

~

/

10" lA
FOR TEST CIRCUIT

V

10

10

30

16

50

40

Fig. 12 - Typical On·Resistance Vs. Drain Current

VGS"°V

T

14

31

.......

.......

3

.........
.........

....... .........

.........

,...- /

f--

UFNF332. 333

UFNF330.331

........

........
......... .......... ......

........ t'-....

1
ROS(on) MEASURED WITH CURRENT PULSE OF
2 0 ~s OURATION INITIAL TJ" 250C (HEATING
EFFECT OF 2 OjJs PULSE IS MINIMAL)

30

10

15

40

I

/
10

-

Fig. 13 - Maximum Drain Current Vs. Case Temperature

/VGS'10V_

-

SIEE FljURE

Qg. TOTAL GATE CHARGE (IlC)

Vos, DRAIN TO SOURCE VOLTAGE (VOL lSI

1

~

75

50

100

'a. oRAIN CURRENT (AMPERESI

10. DRAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve

"

115

~

"
150

40

35

i"

30

z

15

~

10

.........

0

ill
c

"- ......

~

~

15

""'-

~ 10

10

40

60

~
80

'"

100

120

........

,

140

Te. CASE TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-290

PRINTED IN U.S.A.

UFNF330 UFNF331 UFNF332 UFNF333

Fig. 15 - Clamped Inductive Test Circuit

R

•

Fig. 16 - Clamped Inductive Waveforms
EC

VARY tp TO OBTAIN
REOUIRED PEAK Il

VGS'

~D_UT~V-"Y
' L+-_----....._--'
E,· 0.5 BVoss Ec' 0 75 BVoss

Fig. 17 - Switching Time Test Circuit

V;
PULSE
GENERATOR

r------,
I
I
I

L _

son

I

- ''--~ TO SCOPE

I

SOn

___ .J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLYI

-

0~·5mA

--'\N\r---i---'Vv\,--o -VOS
IG
CURRENT
SAMPLING
RESISTOR

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-291

10
CURRENT
SAMPLING
RESISTOR

PRINTED IN U.S A

UFNF420
UFNF421
UFNF422
UFNF423

POWER MOSFET TRANSISTORS
500 Volt, 3.0 Ohm

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROa(on) and high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

a

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high·power switching
applications such as switching power supplies, motor controls, and wide· band and audio
amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFNF420

500V

3.00

1.6A

UFNF421

450V

3.00

1.6A

UFNF422

500V

4.00

1.4A

UFNF423

450V

4.00

1.4A

MECHANICAL SPECIFICATIONS
UFNF420 UFNF421 UFNF422 UFNF423

TO·205AD (TO·39)

*

~"'~::::~:3"

DRAtN

SOURCE

GATE

508(0201

~~:~~

045(00181

r8250~~32l&) !ll.l1.!!2I

~

J.

1422(056)

111o!,,"

430101891

11
1

1803 1071)

Rr

--.J

~:~:~g~~: :7

JPlACES

All Dimensions in Millimeters and (Inches)

4/83

4·292

~UNITRDDE

UFNF420 UFNF421 UFNF422 UFNF423

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNF420

UFNF421

UFNF422

UFNF423

Units

500

450

500

450

V

500

450

500

450

V

1.6

1.6

1.4

1.4

A

6.5

6.5

5.5

5.5

 10ton) - ROSton) max.

I
60V

I

,

sL

i - - _TJ'"
I

I
sL
I

1

125°C

TJ" -55 0 C"
1

45V

,

40V

50

100

150

200

250

Vos. DRAIN TO·SOURCE VOLTAGE \VOlTS)

!P70V.1.

J

3

1/

~""

65V=

60V-

,

V

1

r-=

4~V_

16

10

~~

05

8

02

~

100$1.$

1m,

~

OPERATION IN THIS AREA
IS LIMITED BY ROSton)

',h lm.

i

-

',bb~.

01

002

r=
f-f--

00 1

'0

10

TC '" 25 0 C
TJ - 150°C MAX
Rt IlJC"'S25KlWSINGLE PULSE -

LJ

f-f--

UFNF421, 423
1111111

I

III
10

, I

UFNF420, 422

20

SO

100

200

m
III
SOO

Vas. DRAIN TO·SOURCE VOLTAGE !VOL TSI

Vas. DRAIN·TO·SOURCE VOL TAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

101~Stl

U~N~4io, 421
UFNF422, 423

~

EOOS

4OV====
12

"liFNF422.423

z

vrT-- --=

L

10

UFNF420, 421

F=

+=J

b

~~

Fig, 4 - Maximum Safe Operating Area
10

V

,

i'--.J.
I'--J'.J
/;"1

VGS. GATE·TO·SOURCE VOLTAGE (VOL TSI

Fig, 3 - Tvpical Saturation Characteristics

r-slO 1010n) x ROSton) mix.

102
TJ.-~

.....
/ / ' ......
/'

Ih ~

l~

-

./

-

~

~

I.- -;~.250t_

. /10-

TJ:

"

:!
~

z

TJ=250 C,

~
~
~

mot

""

u

z

~

TJ= 150 0

10

e

"""""TJ = 15DOC-::=:=

~

>
~

t--TJ = 25 0 C

;

/I

111

I(

10

I

I
o

3·

10. CRAIN CURRENT (AMPERES)

VSQ. SOURCE TO-DRAIN VOLTAGE (VOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On· Resistance VI. TemperBtur.
26

125

,...

110V
- r- V~S=
10:: I OA

/
/

~

j

",. ~
".
..",.

",.

/

/

V'
V

""
0.15

-40

./

!

~

40

80

120

~ ......

V

0.2

160

-40

TJ. JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

0.6

4-295

40
80
120
TJ, JUNCTION TEMPERATURE (DC)

180

PRINTED IN USA

UFNF420 UFNF421 UFNF422 UFNF423

Fig. 10 - Typical Capacitance Vs. Orain·to·Source Voltage
1000

20

I

VGS1.0

I

s

w

~

I

COll·Cds+fC~
go+ ..
600

400

I

- I--

I

I

~\" "-

--

I--

I

C,g

\ .....
\ r-....

200

I

vos' 250V
I
vos' 400V

I

l\

U

Vas" l00V

r--

-

-Cdl+Cgd

~

§

I '·I.MH. I

Cia'" CgI+Cgd.CdtSHORTEDCIlI -C..

800

Fig. 11 - Typical Gate Charge Vs. Gate·to.source Voltage

r-

I
Co..
C",-

I

.....

10
20
30
'0
Vas. DRAIN·IO·SOURCE VOll AGE (VOLTS)

,.

8

SjE F1G URE
1

'i

12

16

A.. TOTAL GATE CHARGE I,CI

Fig. 12 - Typical On·Resistance V•. Orain Current
9

,.J

10 '3A
FOR'TESTC1RCU1T

V

50

~
I"-

t-20

Fig. 13 - Maximum Orain Current Vs. Case Temperature

I

2.0

vGS'" IOV

8

V

6

5

/

•
3

2

6

/vGS'20V

7

,

2

J
V

!

~

f'..

i"- I'--

........

f'.... t"-, UFNF420. 421
UFNF422••;?~

8

/V
V

......

~

•

O.

ROSlon) MEASURI:D WITH CURRENT PULSE OF
2.0",sDURATION INITIAL TJ:25 0 C (HEATING
EFFECT OF 2.0 I-iS PULSE IS MINIMAL.1

10

'a. DRAIN CURRENT (AMPERES)

,

r\

0
25

14

12

~

75

50

100

125

'50

Te. CASE TEMPERATURE (DC)

Fig. 14 - Power Vs. Temperature Oerating Curve
0

'\

5

1'\
1\

\

0

'\

'\
1'\

5

'\
20

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

40

60
80
100
Te, CASE TEMPERATURE (DC)

4-296

120

140

PRINTED IN U S.A

UFNF420 UFNF421 UFNF422 UFNF423

Fig. 15 - Clamped Inductive Test Circuit

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBTAIN
REQUIRED PEAK.IL
V G S . R OUT
I L _ - - < O - - -___.........,
£1'" 0.5 BVOSS

EC '" 0.75 BVDSS

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR
r------,

I
I
I

L _

son

I

son

I

___ .J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

O~·SmA

IG
CURRENT
SAMPLING
RESISTOR

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 , TELEX 95-1064

4-297

10

CURRENT
SAMPLING
RESISTOR

PRINTED IN U.S A.

UFNF430
UFNF431
UFNF432
UFNF433

POWER MOSFET TRANSISTORS
500 Volt, 1.5 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros,on. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFNF430

500V

1.50

2.75A

UFNF431

450V

1.50

2.75A

UFNF432

500V

2.00

2.25A

UFNF433

450V

2.00

2.25A

"
*

MECHANICAL SPECII'ICATIONS

UFNF430 UFNF431 UFNF432 UFNF433

TO-205AD (to-39)

K!l:ir.:

~'~D88ID0351

DRAIN

SOURCE

GATE

508(020)

~~~!.~

045(0018)

'36".T

ra.25D~~3l25) ~

4.3ifWl6ij

.:,1711

1:~

::~m~~!

DIA

3 PLACES

All Dimensions in Millimeters and (Inches)

4/83

4-298

D::D UNITRODE

UFNF430

UFNF431

UFNF432 UFNF433

ABSOLUTE MAXIMUM RATINGS
UFNF430

UFNF431

UFNF432

UFNF433

500

450

500

450

V

Drain - Gate Voltage IRGS - 1 Mill (j)

500

450

500

450

V

Continuous Drain Current

2.75

2.75

2.25

2.25

A

11

11

9.0

9.0

A

Parameter

VOS

Drain -

VOGR
10@TC - 25°C
10M

Pulsed Drain Current

VGS
PO@TC-25°C

Max. Power Dissipation

Gate -

Source Voltage

CD

®

±20

V

251See Fig. 141

W

Source Voltage

0.21See Fig. 141

Linear Derating Factor

11

I

11

Operating Junction and
Storage Temperature Range

TJ
T5t9

Lead Temperature

ELECTRICAL CHARACTERISnCS @ TC

BVOSS Drain - Source Breakdown Voltage

IGSS

Gate - Source Leakage Reverse

lOSS

Zero Gate Voltage Drain Current

1010ni

On-State Drain Current

ROS(onl Static Drain Resistance

®

®

Source On-State

®

I

9.0

A

9.0

I

-55to150

°c

300 (0.063 rn. (1.6mm) from case for 105)

·C

=2S·C (Unless otherwise specified)

Parameter

V GSJtht Gate Threshold Voltage
Gate - Source leakage Forward
IGSS

W/K

ISee Fig. 15 and 161 L - 100~H

Inductive Current. Clamped

ILM

Type

Min.

Typ.

Max.

Units

UFNF430
UFNF432

500

-

-

V

VGS

450

-

-

V

10 = 250~A

2.0

-

4.0

V

VOS = VGS' 10 - 250~A

SOO

nA

VGS = 20V

UFNF431
UFNF433
ALL
ALL

-

ALL

-

ALL

Test Conditions
~

OV

-

-500

nA

VGS - -20V

-

250

~A

VOS - Max. Rating, VGS - OV

~A

VOS = Max. Rating x O.B, VGS = OV, T C - 12S·C

-

1000

UFNF430
UFNF431

2.75

-

-

A

UFNF432
UFNF433

2.2S

-

-

A

UFNF430
UFNF431
UFNF432
UFNF433
ALL

-

1.3

1.5

II

-

1.5

2.0

II

1.5

2.S

-

5 lUI

ALL

-

600

BOO

pF

100

200

pF

VOS ) 1010n) x ROSlon) max.' VGS = 10V

VGS = 10V, 10 = 1.5A

gf.

Forward Transconductance

Ciss

Input Capacitance

Coss

Output Capacitance

ALL

Crss

Reverse Transfer Capacitance

ALL

60

pF

Turn-On Delay Time

ALL

-

30

tdlon)
tr

-

30

ns

VOO

Rise Time

ALL

-

-

30

ns

See Fig. 17

tdloll)
tf

Turn-Off Delay Time

ALL

-

ns

ALL

-

55

Fall Time

30

ns

(MOSFET switching times are essentially
independent of operating temperature.)

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

22

30

nC

Ogs

Gate-Source Charge

ALL

-

11

-

nC

°gd

Gate-Drain ("Miller") Charge

ALL

-

11

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

Og

LS

Internal Source Inductance

Units

ALL

_.

-

lS

-

nH

nH

VOS ) 10 on x ROSlonl max.' 10 - 1.SA
VGS = OV, VOS = 2SV, 1= 1.0 MHz
See Fig. 10
s

225V, 10 = 1.5A, Zo - 1511

VGS = 10V, 10 =6.0A, VOS = O.BVMax. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Modilied MOSFET

Measured from the
drain lead, 5mm
(0.2 in.! from header
to center of die .

symbol showing tt:Je
internal device
inductances.

Measured from the
source lead, 5mm
(0.2 In.) from header
to source bonding

.@)

pad.

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthJA

Junction-to-Amblent

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Free Air Operation

4-299

PRINTED IN u.S A

•

UFNF430 UFNF431

UFNF432 UFNF433

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

Continuous Source Current

IBody Dlodel

ISM

Pulse Source Current

IBody Diodel @

VSD

®

Diode Forward Voltage

Modified MOSFET symbol

UFNF430
UFNF431
UFNF432
UFNF433

-

-"

2.75

A

-

-

2.25

A

UFNF430
UFNF431

-

11

A

UFNF432
UFNF433

-

"-

9.0

A

UFNF430
UFNF431

-

-

1.4

V

TC

~

25°C, IS

~

2.75A, VGS

~

OV

UFNF432
UFNF433
ALL

-

-

1.3

V

TC

~

25°C, IS

~

2.25A, VGS

~

OV

800

-

ns

TJ - 150°C, IF - 2.75A, dlF/dt -

l00Al~s

~C

TJ - 150°C, IF - 2.7SA, dlF/dt -

100A/~s

showmg the mtegral
reverse P-N Junction rectlflN

j~

trr

Reverse Recovery Time

QAA

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time IS negligible. Turn-on speed IS substantially controlled by LS + lO'

 1010n) II RaSlon) mall.
vGS ~ 5 DV-

-

~
3

f-- _TJ"~12~OC
T.l~2!iOC,
2f-- -TJ~I~550C, ~

'r- = 1=

'-......11
rJ.

I

I

/ 'I

'!V~ = F

~
300

100
200
Vos. DRAIN TO SOURCE VOL lAGE (VOL lSI

VGS. GATE TO SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
20

5
801111 PUJE

TESJ

,

/

#

L ,.......-

3

lO:r f-7;'1_

10

t-

UFNF432, 433

5Ot=~

2

VGS~4:i= ~

4OV_

F"

1J = 1500 C MAX

,'~

1
0.01.0

Vos, DRAIN TO-SOURCE VOLTAGE (VOL IS)

joms,

LTC - 25'C

lOOms

RthJC = 5.0 KfW
SINGLE PULSE

O,tt-

III

002

10

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (7101 326·6509 • TELEX 95·1064

ll~~k

0

,
00

~

10~s-

IOOj.ls

UFNF432 433

j

I

OPERATION IN THIS AREA
l.lIS LIMITED BY ROSlon)

UFNF430, 431

/
2

!!tN~431

I~~~Ff1t' 433

III
2

10

20

50

100 200

1~~~~'f2
500

VOS, DRAIN·TO·SOURCE VOLTAGE (VOLTS)

4·300

PRINTED IN U.S.A

UFNF430 UFNF431

UFNF432

UFNF433

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction~to-Case Vs. Pulse Duration

I
-

•

-

0= 05

,

JrUL

-

"""

i!I

i""":

--

-

--

,

0.02

r--oo,

--

~INGlE PULSE (TRANSIENT

2

,

NOTES

--- -

f-~_2
2
f--o,
'Eoo,

=!)

0 QEG C/W

3 TJM - Te" POM ZlhJClt)

10-3

10-4

:~

2 PER UNIT BASE" RthJC

r--

THERMAL IMPEDANCE I

...1-1-'"

~2~

DUTY FACTOR, 0"

10-1

10

'0

I,. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance VI. Drain Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage
2

TJ.-",l...... ~ r-

L
I
1/

L

. . . r--f

V

TJ= 2!iDC

TJ=~

~~~

L

V

P

................

-

, /, V

,

max.

//

..,

TJ= ISODC

,I

2

I I TJ'!'"

IO"s PULSE TEST

0
10. DRAIN CURRENT (AMPERES)

VSD. SOURCE·TO-DRAIN VOLTAGE (VOL lSI

Fig. 8 - Breakdown Voltage VI. Temperature

"

.......... TJ= ISOoC

/'

0

,
Vas> 10(onl x ROSlon)

IJII'

f---2

1/ /

IVJ

J

2

Fig. 9 - Normalized On-Relistanoa VI. Temperatura

,

V

2_ 2

1/

,
.......
~

,
'~

..... 10-'"

/

....... ~

/

.......... V

/

0

/
6

,
-'0

/

4

,
01

/

8

'0

80

120

0, 2

160

TJ, JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

/

VGS-10V

'r ",

, /
40

10

I
'20

'80

TJ. JUNCTION TEMPERATURE 1°C)

4-301

PRINTED IN USA

UFNF430

2000

20

)G5'01
tilMH{

J .1

Cits '" c9l + Cgd. Cds SHORTED -

1600

era = Cgd

;:;

:l:

800

u

1'-

vas ~ 250V

gd

-

vas ~

hV

,

\ '" ~s

/

~

10

~/

400V

~/

C,"

,\
400

t: ~

I

CCgs+~gd

..
""Cds+Cgd

1200

z

:'l

VO)100V

COlI '" Cds +

;0

UFNF432 UFNF433

Fig. 11 - TVpical Gate Charge Vs. Gate·to.source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to.source Voltage

.1

UFNF431

30

20

40

/

'O"'SA
FOR TEST CI ReUIT

f--

SEtFIGyE 18

1

31

24

\6

50

Vas. DRAIN TO SOURCE VOLTAGE (VOL IS)

40

Og. TOTAL GATE CHARGE (I1C)

Fig. 12 - Typical On·Resistance Vs. Drain Current

Fig. 13 - Maximum Drain Current Vs. Case Temperature
30

ROSlon) MEASURED WITH CURRENT PULSE OF
20 ,",S DURATION INITIAL TJ" 250C (HEATING

II

EfFECT OF 2.0", PULSE IS MINIMAL

i'

24

:-

l
VGs • 1OV W

V

... ~

V

I

VGS"2BV

......

.......

r--.. .......

-

"'

UFNF432, 4;--'

V VI

UFNF4~.

431

"

"-

~~

"~'\

06

10

"

20

'0. DRAIN CURRENT (AMPERES)

,

'\

o

1

~

50

100
Te. CASE TEMPERATURE (OC)

125

150

Fig. 11. - Power Vs. Temperature Derating Curve
40
35

~

30

~

>;
z

0

~

iii

"

"'r-..

20

<5
~

~

,t

15

.......

I'....

i'--

10

20

40

80

100

Te CASE TEMPERATUAI::

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-302

""
(oC)

120

.......

"

140

PRINTED IN USA

UFNF430 UFNF431

Fig. 15 - Clamped Inductive Test Circuit

UFNF432 UFNF433

II

Fig. 16 - Clamped Inductive Waveforms
Eo

VARY Ip TO OBTAIN

VGS.R

REQUIRED PEAK Il
OUT

'l+---t>---......JV<. iOlon) x

r--- ROS(on) max.

TJ "I 125'1'------ rJ V
T'I""'I'------ If) fY

I--

TJ=-5501~

'I'

,l-r I--

- - -- -- -

/I

f---

.v- I--

~

-+

I-' V - I--

10
10
3lJ
40
Vas. ORAIN TO SOURCE VOLTAGE (VOL IS)

l..d ~
2
4
•
VGS. GATE·TO·SOURCE YOL TAGE (YOLTS)

50

Fig. 3 - Typical Saturation Characteristics

,.
80/.ljpULSE1TEST

1/,
D'/

~

50

20

- UFNI20, 1

OPERATION IN THIS
AREA IS LIMITED
BY ROS(on}

-tTlh

I

lOti

1\

= UFN120. 1

1001-1$

FN122,3

VGS=6V--

,VII. /"

J. ~

)V

\0

Fig. 4 - Maximum Safe Operating Area
100

--

- f1iY~ ,.....
7/9V8V .J~
/, ';:/1

rJ/

fI,v

I--

!"

I
I

-RthJC" 312 K/W
2 _ISINGlE PULSE ,,_

I
'Y

oI

10

4

Vas. DRAIN TO SOURCE VOLTAGE \VOL IS)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10ms
lOOms

_ TC=25 0C

=TJ -150'C MAX

I - -'i

t-

1m,

10

DC

U~N\20, 2

UFN121 3
20

50

100

200

500

VOS. ORAIN TO SOURCE VOLTAGE (VOLTS)

4·306

PRINTED IN USA

UFN120

UFN121

UFN122

UFN123

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Cas. Vs. Pulse Duration
[

•

[
0-0.5
NOTES

mIL

f-b.2
f-0.1

~

=0.05
-0.02

...,

;;;0.01

~2~

iii~

1 DUTY FACTOR, 0;

SINGLE PULSE ITRANSIENT

~~

2. PER UNIT BASE'" RthJC:' 3.12 OEG. elW.

THERMAL IMPEDANCE}

3. TJM-TC",POMZthJCItl
10-3

10

1.0
11. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source·Drain Diode Forward Voltage

~ b-== =

TJ -s50

~

/'

l/ L

r/

,'I
/I

V-

.."
,,/

--

I

g

102

~'25h =
~ -T
TJ! 125 1

TJ"Z5 0C

I

..... ~

I

0

~

10

-TJ,,500 C

Vas> 'Olon»)( ROS(on) max.
8Oj,PUlSjTEST

16

12

10

I

7

2
1.0

TJ::-,500 C_

~

z

~

~

I

TJ"'25 0 C

I
o

'D. DRAIN CURRENT 1AMPERES)

VSD. SOURCE·TO-DRAIN VOLTAGE (VOL IS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On·Resistance VI. Temperature
2.2

1.25
w

c:~

u

1.15

>

.."

!
"

~ 'S 1.06

., "..

Ww

"'N

:~

~!

~~ 0,95

z

!

~

0.85

"..

~

~

1.8

z

CIS 1.4
Ww

V

~~

~:
~~ 1.0

l...,..o-' "".

""

/'

..

6

0,6

40
80
120
TJ. JUNCTION TEMPERATURE (OCI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

160

./

V"

,/

~

i:
0.75
-40

/~

~

",

/'

",.

r

VGS'10V

V

0.2
-40

40

3A

80

I -

r-120

TJ,JUNCTION TEMPERATURE fOCI

4·307

PRINTED IN U S.A

UFN120 UFN121

Fig. 11 - Typical Gate Charge V•. Gate-to-Source Voltage

Fig. 10 - Typical Capacitance V,. Drain-to-Source Voltage
1000

I .l

20

J

Vas :0

I

800

\

'z"'

;5

"~

:t

III

'~

\

400

~

-

eoes '"' Cds+ CC,+~gd

gIf

"'"""

-

'IIIICds+Cgd

-'""~ I--

C;"

w

~

~

~

J'"

\

V
50

0"

-

.......

I-- VGS' IOV

0

w

D.•

t

~

0.2

12
TOTAL GATE CHARGE ("CI

16

20

Fig. 13 - Maximum Drain Current Vs. Case Temperature

z

~

10 -IDA
FOR TEST CIRCUIT
SIEE F'iURE 18
1

J

~
~

~

II

5

I

w

'"'

V

10

I
"~
:=z

~

>

0.8

0.6

10

....

Fig. 12 - Typical On-Resistance V,. Drain Current

~

VOS • BOV,

f--

"
6c-

10
20
30
40
VOS' ORAIN·TO·SOURCE VOLTAGE (VOLTSI

'z"'

UFN1~, 122 ~ ~
VOS·50V

0

I

\

VO~20V

15

~

I
C,,,

I\..

u"

200

J

f,'IMH,'1

C,• • CIII + CgIf. Cd. SHORTED C", • CgIf

~ 600
w

UFN122 UFN123

-f-- '"

-~OS(onl

J

..........
.......... f....

:::

UFNI20, 121
..........

UFNI22, 123

........ ~

r-....: "'-

1/

-

~

'" ,
I\.

f.--C20V

~

IF __ -

MEASURED WITH CURREJ PULSE
2.0,us DURATION. INITIAL TJ '" 25°C (HEATING
EFFECT OF 2.0 IJS PULSE IS MJNIMAL.)

10

20

o

40

30

25

50

15

100

125

150

Te. CASE TEMPERATURE (DC)

10, DRAIN CURRENT (AMPERES)

Fig. 14 - Power V,. Temperature Derating Curve
40

'\

35

30

i
z

25

~

20

\.
\.

"\

0

illQ

I\.

'\

~

~

15

\.

~

~

10

20

40

60

80

100

Te. CASE TEMPERATURE (OC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-308

'"

120

i"\
140

PRINTED IN U.S.A

UFN120

UFN121

UFN122

UFN123

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit
VARY tp TO OBTAIN
REQUIRED PEAK IL

VOS·R

'l---<)---<~""'--'

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR

r-----..,
I
I
I

L_

son

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

I"::']}.S rnA

o

--'\iI\l'Ir-.....-'II'I!\__-<>

'.

CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·309

-VOS

10

"':

CURRENT
SHUNT

PRINTED IN U.S.A.

UFN130
UFN131
UFN132
UFN133

POWER MOSFET TRANSISTORS
100 Volt, 0.18 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslanl and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFN130
UFN131
UFN132
UFN133

lOOV
60V
100V
60V

0.18n
0.18n
0.25n
0.25n

14A
14A
12A
12A

MECHANICAL SPECIFICATIONS
UFN130 UFN131 UFN132 UFN133

TO-204AA (TO-3)

2222{0875)

"'f~·AXDIA~~
SEATING

T

PLANE

a; IS til --H-OIA

TWO PLACES

1016(040) MIN

TWO PLACES

H!I~mIO'A

TWO PLACES

DRAIN

(CASEI
SOURCE

16~~IK:;glt
f

MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4-310

~UNITRDDE

UFN130 UFN131

UFN132

UFN133

ABSOLUTE MAXIMUM RATINGS
UFNl30

UFN131

UFNl32

UFNl33

Units

Vas

Orain • Source Voltage (j)

100

60

100

60

V

VOGR
10@TC=25°C

Drain· Gate Voltage (RGS - 1 Mil) (j)

100

60

100

60

V

Continuous Drain Current

14

14

12

12

A

10@TC = 100°C Continuous Drain Current
Pulsed Drain Current @
10M

9.0

9.0

8.0

8.0

A

56

56

48

48

Parameter

VGS
PO@TC=25°C

Gate ~ Source Voltage
Max. Power Dissipation
Linear Derating Factor

I

56

75

(See Fig. 14)

0.6

(See Fig. 14)

(See Fig. 15 and 16) L = 100"H
56
I
48

Inductive Current, Clamped

ILM

Operating Junction and

TJ
Tstg

A
V

±20

J

A

48

-55to 150

°C

300 (0.063 in. (1.6mm) from case for lOs)

°C

Storage Temperature Range
Lead Temperature

W
WIK

ELECTRICAL CHARACTERISTICS@Te= 25°C (Unless otherwise specified)
Parameter

8VOSS Drain - Source Breakdown Voltage

Type

Min.

Typ.

Max.

Units

UFNl30
UFN132

100

-

-

V

UFN131
UFNl33

10 = 250"A
Vas - VGS' 10 = 250"A

60

-

-

V

V GS(tltl Gate Threshold Voltage
Gate-Source Leakage Forward
IGSS

ALL

2.0

4.0

V

ALL

IGSS

Gate-Source Leakage Reverse

ALL

-

lOSS

Zero Gate Voltage Drain Current

-

-

-

UFNl30
UFN131

10(on)

®

ROS(on) Static Orain·Source On·State
Resistance

®

®

VGS = OV

100

nA

VGS = 20V

-100

nA

VGS - ·20V

250

VOS = Ma •. Rating, VGS = OV

-

"A

1000

"A

VOS - Ma •. Rating. 0.8, VGS = OV, TC - 125°C

14

-

-

A

UFN132
UFN133

12

-

-

A

UFN130
UFN131

-

0.14

0.18

0

UFN132
UFN133

-

0.20

0.25

0

ALL

4.0

5.5

-

Sill)

ALL

-

600

800

pF

300

500

pF

100

150

pF

ALL
On·State Drain Current

Test Conditions

VOS > 10(onl' ROS(on) ma •. ' V GS = 10V

VGS = 10V, 10 = 8.0A

gfs

Forward Transconductance

Ciss

Input Capacitance

Coss
C rss

Output Capacitance

ALL

Reverse Transfer Capacitance

ALL

tdlonl
tr

TurnMOn Delay Time

ALL

-

Rise Time

ALL

-

tdloffi
tf

Turn·Olf Oelay TIme

ALL

Fall Time

ALL

Qg

Total Gate Charge
(GateMSource Plus Gate-Drain)

-

30

ns

75

ns

-

-

40

ns

-

-

45

ns

ALL

-

18

30

nC

vas> 10(onl' "as (on) ma •. ' 10 • 8.0A
VGS = OV, Vas = 25V, I = 1.0 MHz
See Fig. 10
VOO = 36V, 10 - 8.0A, Zo
See Fig. 17

= 150

(MOSFET switching times are essentially
independent of operating temperature.)

V GS - 10V, 10 = 18A, Vas = 0.8 Ma •. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Qgs

Gate-Source Charge

ALL

-

9.0

-

nC

Qgd

Gate·Orain ("Miller"l Charge

ALL

-

9.0

-

nC

La

Internal Drain Inductance

ALL

-

5.0

-

nH

Measured between
the contact screw on
header that is closer to
source and gate pins
and center of die .

LS

Internal Source Inductanqe

ALL

-

12.5

-

nH

Measured from the
source pin, 6 mm
(0.25 in.) Irom header
and source bonding
pad.

Modilied MOSFET
symbol showing the
internal device
inductances.

.@)

~

THERMAL RESISTANCE
RthJC

Junction·to·Case

RthCS

Case·to·Sink

Mounting surface flat, smooth, and greased.

RthJA

Junction·to·Ambient

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

4·311

PRINTED IN U.S.A

•

UFN130

UFN131

UFN132 UFN133

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
(Body Diode)

-

-

14

A

UFN132
UFNl33

-

-

12

A

UFNl30
UFN131

-

-

56

A

UFN132
UFN133

-

-

48

A

UFN130
UFN131

-

-

2.5

V

TC = 25°C.IS = 14A. VGS = OV

UFN132
UFN133

-

-

2.3

V

TC = 25°C.IS = 12A. VGS = OV

360

-

ns

T J - 150°C.I F - 14A. dlF/dt - 100A/~s
T J - 150·C. IF - 14A. dlF/dt - 1 OOA/~s

Pulse Source Current
(Body Diode) @

Diode Forward Voltage @

Modified MOSFET symbol
showIng the Integral
reverse P-N Junction rectifier.

UFNI30
UFN131

~

trr

Reverse Recovery Time

ALL

QRR

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LO-

2.1

~C

@PulseTest: Pulse width'; 300~s. Duty Cycle'; 2%.

@ Repetitive Rating: Pulse Width limited
by max. Junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 2 - Typical Transfer Characteristics

Fig. 1 - Typical Output Characteristics
20

20
IOVya:V

16

sliJspulsETEJT_ r-16

VGso6V=

I

=

//,
l(Jf

1- -

,~-

fA/

TJ" +125 0C

; i TJ0 25 0 C
rJo j55 0 C

-

10
20
30
'0
Vas. DRAIN TO SOURCE VOLTAGE (VOLTS)

--::: fJl

0 ,'I

Fig. 4 - Maximum Safe Operating Area
100

80 ""PU LSE TEST

&

10JI

9~'-......, --.........

8

8V'-......,

~ /'[

so

./

!

~ jI ~(
~~ /

~ '/

Ih Y

_J
.........

~

~

~

f-

10~s

I I

I'

100~s

FUFNl32.3

10

1 ms

=
~

101m.
100 ms
10

0.5

DC

~rco250C
~TJ" 1500C MAX

r-

RthJC - 1 67 K/W
02 r-IS1NGlE PULSE

12

°

16

o1

10

20

Vas, DRAIN TO SOURCE VOLTAGE (VOltS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

['
~,

"uz

i 'I
08

r-~F~lJ. 1~

z

E

GS

04

.

UFNl32.3

20

"...."

A~ : /

2

OPERATION IN THIS
ARE~~UMITED BY ROS(on)

1= UFNl30. 1

~

01/,/

10

vGS, GATE}O.SOURCE VOL TAGE (VOLTS)

Fig. 3 - Typical Saturation .Characteristics

10

"
"
J
/I

5

V

1/

~ax.

VOS> 1010n) x ROS(on)

I{

V-

~Oj.lSPU!lSETE~T

-

I
7V

f-

UFN131.3

I

11111
10

20

UFNl30.2

II
50

I
100

I
200

500

VOS. DRAIN TO SOURCE VOLTAGE (VOLTS)

4-312

PRINTED IN U.S A

UFN130 UFN131

UFN132

UFN133

Fig.5 - Maximum Effective Transient Thermal Impedance. Junction·to-Case Vs. Pulse Duration

I

•

1
O' 0.5
NOTES,

mIL

1-0.2
0.1

~2~

0.05
=0.02=
~~.o!,;..

I

:~

SINGLE PULSE (TRANSIENT

1 DUTV FACTOR, 0"

mrMA~ '~PEOfN~E\ I I

2 PER UNIT BASE' R"JC • 1.61 OE6. ClW.
3 TJM - TC • POM ZthJell).

jIlL
10-2

10-3

1.0

10

t"SOUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Sourca-Drain Diode Forward Voltage

10

-

~~

,

U

TJ;; 25 0 C

...'z"

~"5,l

I-

ij

~,;;

TJ;-550C

102

~

~
~
~

u

z

TJ;; 125°C

~w

V
Vas> lo(on) II ROS(on)

10

15

10. DRAIN CURRENT (AMPERESI

=

!SOOC

"1

~

I
10

"

10

TJ

~

BO(IPUljETESI

V

:'-TJ" 1500C

//

10

>

max.

"""

./

w

I I

TJ',50C

o
Vso. SOURCE·Ta-DRAIN VOLTAGE (VOLTS)

Fig.8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance VI. Temperature
22

12 5

5

",

5

."

/

....... "
/

.... " ,
./

./

V

./

5",

V

V

I

5

0) 5
-40

V

40

80

120

VGS"OV _

'r

6A

-

I

2

160

-40

TJ. JUNCTION TEMPERATURE (DC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

06

/'

40

80

120

TJ. JUNCTION TEMPERATURE (DC)

4-313

PRINTED IN USA

UFN130 UFN131

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
2000

II

.

~

~Gs·J

~

~
w

t-..

400

\ ~

'"=>

20

~~

10

~
:;;
I;;

I

~

/

>

30

H

I

C~a

10

10-18A

FOR TEST CIRCUIT

V

40

50

16

32

40

Fig. 13 - Maximum Drain Current Vs. Case Temperature
20

ROSILa MEASUIRED WITH 1CURRENi PULSE
2.0 JIS

0.5

24

0,. TOTAL GATE CHARGE (o,CI

Fig. 12 - Typical On-Resistance Vs. Drain Current
0.6

w
u

f--

TFITEIi

Vos. ORAIN·TO·SOURCE VOLTAGE IVOLTSI

IS!

UFN1~.I32~ ~ r
VOS-50V

VOS -BIN.

~

u

L

r--

\

I~

f-- -

>

C!a

\

VOS' 20V
15

'"

-

I

800

U

~

-

+c...
~

"Cds+Cgot

z

~

20

.l .1
Cp~Cgd.t.SHORTEO_

c.· Cell·
1200

Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage

1-1MH •

Cia •
C. . . cgd

1800

UFN132 UFN133

r-

o~

URATION. INITIAL TJ = 25°C. (HEATING

EFFECT OF 2.0

I'" PULSE IS MINIMAL.l

16

-

Z

~

~

0.4

0

w
u

'"=>

0.2

0

g

~

0.1

VGS -

20

-r--..... ["'.. ......

---

~

30

:--...: ~

r

~

40

~

.,

ov

o
10

......... ~FNI30.131
UFNI32.133

_V

-

i'-j"-.... ........

)

0

~

-

0.3

6

:i;

.....

V~ -10V

z

50

50

25

60

10 , DRAIN CURRENT (AMPERES)

100
15
TC. CASE TEMPERATURE 10C)

m

150

Fig. 14 - Power Vs. Temperature Derating Curve
80

10

- I'\.

'\

I\.
'\f\.

'\

'\

0

I'" i\.

0

0

i\
20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

40

60

80
100
Te. CASE TEMPERATURE (OCI

4-314

120

140

PRINTED IN U.S A.

UFN130 UFN131 UFN132 UFN133

II
Fig. 15 - Clamped Inductive Test Circuit

Fig. 16 - Clamped Inductive Waveforms

VARY Ip TO OBTAIN
REQUIRED PEAK Il

VGSOR

Il+---<>---~"M.-J

Fig. 17 - Switching Time Test Circuit

PRF'" 1 kHz

v,

tp'Olj.1s

V,

_ . r - - - r TO SCOPE

r------,
I

I
I
IL_
20V

z,

I
I

Zo

_ __ ...II

ISS?

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

0~1.5mA

--'\J'V'Ir"....-'V'I/\,--o -VOS
IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-315

10
CURRENT
SHUNT

PRINTED IN U.S A

UFN140
UFN141
UFN142
UFN143

POWER MOSFET TRANSISTORS
100 Volt, 0.085 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROS 10(on) x
ROS(on) max.

II

6~

I

10

s~

.-!!.~

4~
10
20
30
40
VOS, ORA1N·TO·SOURCE VOLTAGE IVOLTS!"

50

4

II

"

10

VGS. GATE·TO.sOURCE VOLTAGE IVOLTSI

Fig, 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
1000

50
10V

40

I--80LpuJETESJ

~

!Ii

s

"-/V

30

20

~

E
10

- -

~~

",

if
,
~~I

!-7V

- rI--

VGS-6V

5Vr4V

AREA IS LIMITED

~
~

"S>-

-

UFNl40,l
100
UFN142.3
50

lO,us

z
w

UFNl40.1

lOj/J.S_

~
~

w

20 -

UFN142, 3

z

~

10

1 ~,

II

=

='TC=25 0 C

Eo

TJ - 150'C MAX ~
'--- R1hJC -1 0 KIW

t--

- SINGLE PULSE lit

I-- t - -

"

I--

200

I

10
10

Vas. DRAIN-lO·SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

OPERATION IN THIS

BY ROSlon)

i,...oo"

'l "

f=

SOO

f--

I;BV

>-

I.,

'9V'

I I IIII
10

IOms

1'1'_

10

UFN141.3
UFN140.2
20

DC
50

100

200

500

Vos. 0 RAIN TO SOU ACE VOLTAGE (VO l lS)

4·318

PRINTED IN U S.A

UFN140 UFN141

UFN142 UFN143

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to-Case Vs. Pulse Duration

...z

I

w

iii

;L

......
wz

1.0

>~

U

05

oZ 0.'
w 10(on) x ROS(on) max

3

TJ" 1500C

,0

30

411

J II 1

I I

0

50

II
TJ=25 0C

2

10

rz

I

5

rj

V

04

10. DRAIN CURRENT (AMPERES)

1.2

0.8

1.6

2.0

Vso. SOURCE·TQ·DRAIN VOLTAGE (VOL IS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature

,.

1.2 5

5

w

~
Q

1.1 5

0

>

V I---"

5

5

1/1"

5

V~

V

V

I---

V

0

.-

5

0.1

•

-40

!
o

40

80

120

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-40

4-319

.......

L

V
VGS·1OV

ID~ 18.1.

o. 5

0

160

TJ,JUNCTION TEMPERATURE (OC)

~

....V

o

40
80
120
TJ, JUNCTION TEMPERATURE (OC)

160

PRINTED IN U.S A

UFN140 UFN141

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage

UFN142 UFN143

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

2000
Cia =c. + Cgd. Cds SHORTED
VG; -OV
- C ... ·Cgd
f"'lMHz

~

1600

Coa"'CdS+~
.. ' gd

\"'"" ......
\

20

-

-

II:IC.+C_
COl

VOS'30~~

5

r----

'~.~
~

I

~

o VOS' SOV. UFN1~. 142

I\,

......... too..

-,c'"

\

400

L

i'.
w

I-

-

~

~

~

IO-34A
FOR TEST CIRCUITSi E FIGUtE 18

1

I

II

I
ro

~

J

5

M

%

~

20

Vos. ORAIN·TO·SOURCE VOLTAGE (VOLTS)

Fig. 12 - Typical On·Resistance Vs. Drain Current

80

60

Fig. 13 - Maximum Drein Current Vs. Case Temperature
30

O.3
Rgs(oni MEASURE10 WITH Cu'RRENT pulsE OF
2... au RATION. INITIAL TJ' 250C. (HEATING

r---

I- EFFECT OF 2.0 .. PULSE IS MINIMAL.)

24

u

~~

40

Qg. TOTAL GATE CHARGE (nCI

j ,

o.2

i""'o i'..

.......

~

r-..... ......... r-....

i'-- l '

il!

z

~

18

...z

VGS l.ov

o

'"'"=>

)

.1

-I--'
20

u

z 12

40

~

-

V

80

~

o

~

9

~"'20V

60

UFNI40,141

UFNI42,~ ~
.......

w

~
~

~

0
25

120

100

so

75
100
TC, CASE TEMPERATURE (OCr

10. ORAIN CURRENT (AMPE~ES)

125

150

Fig. 14 - Powe, Vs. Temperature Derating Curve
1~

12O~

~

"'

r\.

0

"'

~

"'-

0

"' ,
"' ,

a
0

~

.......

20

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

~

BO

80
100
TC. CASE TEMPERATURE (OC)

4·320

120

140

PRINTED IN U.S.A

UFN140 UFN141

UFN142

UFN143

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit

•

VARY tp TO OBTAIN
REQUIREO PEAK IL
VGS-R

vO_UT-......r:"
IL4_--<>----4......_.....J

Fig. 17 - Switching Time Test Circuit
30V

ADJUST RlTO OBTAIN

Jon

SPECIFIED '0

Vos

r;U~ -

-

I GENERATOR

1.--___-o-__

-C...

-lI,.j--,:K 0 U.T

;J~RCE n I
I IMPEDANCE
L ___ J

Fig. 18 - Gate Charge Test Circuit
+Vas
(ISOLATED
SUPPLY)

12V
BATTERY

-

O~·5mA

-..I\i'V'v---t-'VI/\,--<> ·VOS
IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·321

[0
CURRENT
SHUNT

PRINTED IN U.S.A

UFN150
UFN151
UFN152
UFN153

POWER MOSFET TRANSISTORS
100 Volt, 0.055 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utili~es the most advanced technology available.
This efficient design achieves a very low RDs.an) and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(an)

ID

UFN150
UFN151
UFN152
UFN153

100V
60V
100V
60V

0.0550
0.0550
0.080
0.080

40A
40A
33A
33A

MECHANICAL SPECIFICATIONS
UFN150 UFN151 UFN152 UFN153

TO·204AE (TO·3 mDCIified)

222210.8151

.",'~
...L I~/:~ITfi
ttEATING
=+LANE

T

~:I~.=~:OIA
-i
TWO PLACES

l~a:~:I~1

TWO PLACES

2661
(1 0501 MAX

;·=I:·t~U OIA
TWO PLACES

DRAIN
(CASE)

1~~~l~:~~lf
t MEASURED AT SEATING PLANE

Dimensions in MlIItmeters and IInches)

4/83

4-322

~UNITRDDE

UFN150 UFN151

UFN152 UFN153

ABSOLUTE MAXIMUM RATINGS
UFNl50

UFN151

UFN152

UFNl53

Units

VOS

Drain - Source Voltage (j)

100

60

100

60

V

VOGR
10@TC = 25°C

Drain - Gate Voltage IRGS = 1 MOl (j)

100

60

100

60

V

Continuous Drain Current

40

40

33

33

A

'O@TC = 100°C Continuous Drain Current

25

25

20

20

A

160

160

132

132

A

Parameter

10M

Pulsed Drain Current @

VGS
PO@TC= 25°C

Gate - Source Voltage
Max. Power Dissipation
Unear Derating Factor

'LM

Inductive Current, Clamped

TJ
T stg

Operating Junction and

ISee Fig. 14)

W

1.2

ISee Fig. 14)

W/K

(See Fig. 15 and 161 L - 1OO~H
160
I
132

Drain - Source Breakdown Voltage

VGSlthl Gate Threshold Voltage

-55to 150

°C

300 (0.063 in. 11.6mml from case for lOs)

°C

Type

Min.

Typ.

Max.

Units

UFN1S0
UFN152

100

-

-

V

UFN15l
UFN153

60

-

-

V

10 = 250~A

ALL

2.0

4.0

V

VOS - VGS, '0 - 250~A

-

-

100

nA

VGS = 20V

-100

nA

VGS = ·20V

250

~A

VOS - Max. Rating, VGS - OV

1000

~A

VOS = Max. RatingxO.S, VGS = OV, TC = 125'C

UFN150
UFN151

40

-

-

A

UFN152
UFN153

33

-

-

A

UFN150
UFN151

-

0.045 0.055

UFN152
UFN153

-

0.06

IGSS

Gate-Source Leakage Forward

ALL

'GSS

Gate-Source leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

ALL
On-State Drain Current

®

ROS(on) Static Drain-Source On-State
Resistance

A

132

I

=25'C (Unless otherwise specified)

Parameter

1010ni

150

Storage Temperature Range
Lead Temperature

BVOSS

I

160

ELECTRICAL CHARACTERISTICS @ Te

V

±20

®

®

Test Conditions

VGS = OV

VOS

>'Olon) x ROSlon) max.' V GS

= 10V

!l

VGS = 10V, 10 = 20A
0.08

!l

> Dian) x

gfs

Forward Transconductance

ALL

9.0

11

-

SIUl

Ciss

Input Capacitance

ALL

-

2000

3000

pF

Coss

Output Capacitance

ALL

1500

pF

Reverse Transfer Capacitance

ALL

-

1000

Crss

350

500

pF

tdlonl
tr

Turn·On Delay Time

ALL

-

-

35

ns

VOO = 24V, '0 = 20A, Zo = 4.70

Rise Time

ALL

-

100

ns

See Figure 17.

tdloffl
tf

Turn-Off Delay Time

ALL

-

125

ns

Fall Time

ALL

-

-

100

ns

(MOSFET switching times are essentially
independent of operating temperature.)

Qg

Total Gate Charge

ALL

-

63

120

nC

(Gate-Source Plus Gate-Drain)

Qgs

Gate-Source Charge

ALL

-

27

-

nC

Qgd

Gate-Drain I" Miller") Charge

ALL

-

36

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

VOS

OSlon) max.' '0 - 20A

VGS = OV, VOS = 25V, f = 1.0 MHz
See Fig. 10

V GS = 10V, '0 = 50A, VOS = 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured betwee.n

the contact screw on
header that is closer to

source and gate pins
and center of die.
LS

Internal Source Inductance

ALL

-

12.5

-

nH

Measured from the

source pin. 6 mm
10.25 in.l from header
and source bonding
pad.

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC
RthCS

Case·to·Sink

Mounting surface flat, smooth, and greased.

RthJA

Junction-te-Ambient

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-323

PRINTED IN U.S.A.

•

UFN150 UFN151

UFN152 UFN153

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
(Body Diode)

Pulse Source Current
. (Body Diode) @

®

Diode Forward Voltage

UFN150
UFN151

-

-

40

.A

UFN152
UFN153

-

-

33

A

UFN150
UFN151

-

-

160

.A

UFN152
UFN153

-

-

132

A

UFN150
UFN151

-

-

2.5

V

Modified MOSFET symbol

showing the integral
reverse P-N junction rectifier.

~
TC = 25°C, IS = 40A, VGS = OV

UFN152
UFN153

-

-

2.3

V

TC = 25°C, IS = 33A, VGS.= OV

600

-

ns

T J = l50·C,I F - 40A, dlF/dt = 100All's

3.3

-

I'C

T J - l50·C, IF = 40A, dlF/dt = 100A/I's

t"
QRR

Reverse Recovery Time

ALL

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS

+ LO'

@ Repetitive Rating: Pulse width limited

®Pulse Test: Pulse width .. 300l'S, Duty Cycle" 2%.


10(on) x RDSlonl max.

~
50

VGS. GATE·TO-SOURCE VOLTAGE (VOLTS)

Fig. 3 - TVpical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
1000

20
VGS=

l~Vf/

IX?,

16

BJ}lSPUl~ETESJ _

/

III,I(

~ f'lL" i--""'

500

200

UFNl50.1

0.8

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10",
100~=

1 m.

}JFNI52,3

II I I
=TC·2S'C
::: TJ' IS0'C MAX.
::: RthJC • 0.83 KfW

"

10lms
lOOms

=

I
y

12
16
Vos. DRA1N·TO-SOURCE VOL rAGE (VOLlS)
0.4

"

UFNl52,3

,/'

t~

If-

UFN150,1

,....

!IJ /6t
if// I
1/ st

~

OPERATION IN THIS
AREA IS LIMITED
BY RDSlon)

~'rGL~ pmEl1

1.0
1.0

20

JJI

UFN151, 3
10

20

50

DC
UFNl50,2
100

200

500

VOS. DRAIN·TO·SOURCE VOLTAGE IVOLTS)

4·324

PRINTED IN U.S.A

UFN150 UFN151

UFN152 UFN153

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

i

I

:L
wz
>:>

n

1.0

~I-

0'0.6

0.6

S~ 0.2

..::ilf=

NOTES

f--~l

2~~ 0.0

"w

:t~

~2~
*"

5 "-0.01

~

0.02

J

0.0 1

II

ELJL

"-0.1

;~ O. lb~.06
=<
0.02

1 DUTY FACTOR, 0 '"

SINGLE PULSE ITRANS1ENT
THERMAL IMPEDANCE} }

I I

1111111

3. TJM - TC' PDM Z'hJCh}

1

w3

10-5

2. PER UNIT BASE' R,hJC' 0.83 DEG. CIW.

2
5
10-2
2
5
10-1
'1. SQUARE WAVE PULSE DURATION ISECONDS}

Fig. 6 - Typical Transconductance Vs. Drain Current

1.0

10

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20
~~

C=

TJ=ls5 0C f;:;;:;
J..- ~

16

k V
/. V': V

+-

TJ"'2S oC

-

t::::::=:

.I

ill
TJ=l~

J.~ V
~

J.V
III

TJ'150D~

TJ",;.1250C-

I--""'"

~

TJ=25 0 C

TJ'" 25 0 C

iDS> 'Dlan} , RDSIOf

I

I

I

rJlSPUjSETEr

'f

10

20

30

40

1.0

50

°

'0. DRAIN CURRENT (AMPERES)

Fig. 8 - Breakdown Voltage V•. Temperature

1
2
3
VSO. SOURCE·TO·ORAIN VOLTAGE IVOLTS)

Fig. 9 - Normalized On·Resistance Vs. Temperature
2.2

1.2 5

~=

8
11 5

>

~
=
~~ 1.06

. /~

eN

=::;
w<

:If

~~

ez

~

~

0.96",.-

~

.......

."... I---

V

4

V

I-'"
./

°
!

~

0.85

,..

,...... .."

....V
VGS·'0V
10·14A -

o.6

I

~

07 5
-40

40

80

120

0.2

160

TJ, JUNCTION TEMPERATURE (OC)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

-40

40

80

-

I
120

TJ, JUNCTION TEMPERATURE (DC)

4·325

PRINTED IN U.S A

UFN150 UFN151

3200

.i

2400

g

.

§

1800

I VG~ =

I egaI

\
,\

Cia ;

f'" ,I MHt

20

I I

-

+ Cgd. Cds SHORTED

Cgs cgd

u

~

=>

I

~

"I

'"

/
V

~

oss

_r
c",

~

I
10
20
30
40
VDS. DRAIN·TD·SDURCE VOLTAGE IVDLTSI

40

32
014

~

">-

~

5 24

~

:;

84

tl2

r--

.........

UFN152.

153~

w

~
~

~

z

1

0.06

002

-~

o

-

40

80

120

J\.

1'\.\

~

'\~

E

~~

-"v

16

,,

......
........

=>

:i;

J

140

~ ~N150.151

z

0.10

~

-

.........

i"""-- ........

~

1

VGS ", 10V

u

c

r--....

EFFECT OF 2 0" PUT IS MINIMAl.l

z

=>

.........

RDSlo;1 MEASURED WITH CURRENT P0LSE OF

z
c

56

'j

Fig. 13 - Maximum Drain Current Vs. Case Temperature

2.0~s DURATION INITIAL TJ '" 25°C (HEATING

w

In

28

SfE FIG1URE

0,. TOTAL GATE CHARGE I"CI

0.20

..

IO=50A

FOR TEST CIRCUIT

50

Fig. 12 - Typical On·Resistance Vs. Drain Current

i

u

'7
w

""'" C

~

~ 'f'

10

~

I

.........

.....

!:;
c
>

c,..

r-...

50
VDS=
I
I
r-VDS = 8OV. UFNl50.152

«
'"

j[t:Cds+Cgd

r" ~ ,

VD~=20L,

15

w

-

COli" CIk+ Cgs+cgd

\

~

-

era .. CgeI

l\\
1~

800

0

UFN153

Fig. 11 - Typical Gate Charge Vs. Gate·to..source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
4000

UFN152

'\
o

160

25

50

75

100

125

150

Te. CASE TEMPERATURE (OC)

10. DRAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve

'\.

140

'\

\.

120

'\

S
'"

100

'\

z
c

i

80

w

~

60

.P

40

'\

iiiQ

~

20

zo

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

40

'"

80
100
Te. CASE TEMPERATURE (OC)
60

4-326

~

120

1\
140

PRINTED IN U.S A

UFN150

Fig. 15 - Clamped Inductive Test Circuit

UFN151

UFN152

UFN153

Fig. 16 - Clamped Inductive Waveforms

II

VARY tp TO OBTAIN

VGS.R

REDUIRED PEAK It
OUT

'l"'---<)---~"M..--I

Fig. 17 - Switching Time Test Circuit

VDS

r;U~ -

- -O-lr-__O-_-"~

I GENERATOR

I ig~RCE
IMPEDANCE

n

I

L ___ J

Fig. 18 - Gate Charge Test Circuit

+Vos
(ISOLATED
SUPPLY)

-

O~1.5mA

--"-N'\,........---'\IV\,---o -VDS
IG
10
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-327

CURRENT
SHUNT

PRINTED IN U.S.A

UFN220
UFN221
UFN222
UFN223

POWER MOSFET TRANSISTORS
200 Volt, 0.8 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon• and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

UFN220
UFN221
UFN222
UFN223

200V
150V
200V
150V

0.80
0.80
1.20
1.20

5.0A
5.0A
4.0A
4.0A

MECHANICAL SPECIFICATIONS
UFN220 UFN221 UFN222 UFN223

TO-204AA (TO·3)

2222(08751

"13'f~·AX01A~~
SEATING

T

PLANE

J~lg:mID'A-l~

1016(0.401 MIN

TWO PLACES

TWO PLACES

2661
110!iOIMAX

;~:~I~aD'A

TWO PLACES

DIIAIN

(CASEI

SOURCE

1117(044Olt

mmmm

t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4-328

~UNITRDDE

UFN220 UFN221

UFN222 UFN223

ABSOLUTE MAXIMUM RATINGS
UFN220

UFN221

UFN222

UFN223

Units

VOS

Drain - Source Voltage (1)

200

150

200

150

V

VOGR
10@TC - 25·C

Drain - Gate Voltage IRGS = 1 MOl (j)

200

150

200

150

V

Continuous Drain Current

5.0

5.0

4.0

4.0

A

10@TC = 100·C Continuous Drain Current

3.0

3.0

2.5

2.5

A

20

20

16

16

Parameter

10M

Pulsed Drain Current @

VGS

Gate - Source Voltage

PO@TC= 25°C

Max. Power Dissipation
Linear Derating Factor
Inductive Current, Clamped

ILM

I

20

40

ISee Fig. 141

W

0.32

ISee Fig. 141

W/K

ISee Fig. 15 and 161 L - l00I'H
20
I
16

Operating Junction and
Storage Temperature Range

TJ
TstA

A
V

±20

Lead Temperature

I

A

16

-50 to 150

°C

300 10.063 in. 11.6mml from case for 10s1

·C

ELECTRICAL CHARACTERISTICS @ TC = 25°C (Unless otherwise specified)
Parameter
BVOSS Drain - Source Breakdown Vottage

VGSlthl Gate Threshold Voltage
IGSS

Gate-Source leakage Forward
Gate-Source leakage Reverse

lOSS

Zero Gate Voltage Drain Current

1010ni

On-State Drain Current ®

IGSS

ROSlonl Static Drain-Source On-State

Resistance (2)

Test Conditions

Type

Min.

Typ.

Max.

Units

UFN220
UFN222

200

-

-

V

UFN221
UFN223

150

-

-

V

10 = 250l'A

ALL

2.0

-

4.0

V

VOS = VGS, 10 = 250l'A

ALL

-

-

100

nA

ALL

-

-

-100

nA

VGS = -20V

ALL

-

250

I'A

VOS = Max. Rating, VGS = OV

1000

I'A

VOS - Max. Rating x O.B, VGS = OV, TC = 125°C

UFN220
UFN221

5.0

-

-

A

UFN222
UFN223

4.0

-

-

A

UFN220
UFN221

-

0.5

O.B

II

UFN222
UFN223

-

0.8

1.2

II

VGS = OV

VGS - 20V

V OS ) 1010ni x ROSlonl max.' VGS - 10V

VGS = 10V,I0 = 2.5A

gfs

Forward Transconductance  ID(on) x "DS(on) mp.

~

OV

IJ
I

4
! - - TJ = 1250C

VGS=Sj

,-

'r

w

40

60.

80
Vos. DRAIN TO SOURCE VOLTAGE (VOL IS),

/, I
/111
'II

I
I

'---....
"J
"--..,. '(If

I

~ rJ

TJ= 250C

TJ = -550C

100

10
VGS. GATE TO·SOURCE VOLTAGE (VOLTSI

Fig. 4 - Maximum Safe Operating Are.

Fig. 3 - Typical Saturation Characteristics
100

50
5

4

8O.JpUlSE~EST

,

J

I
II
I

I

V-

'7,( V

!l o{

20

~

;
I3

~
fo-VGS"V

10

E

0.'

I',
10",

-~~ri,31
1.0

/

"rr~i
=UFN220,l

z

~
co

UFN220,l

OPERATION IN THIS
AREA IS LIMITED
BY RDSlon)

,

1001'S

1'.'
1 m.

II II
f=Tc o 25'C

f= TJ - 150'C MAX.

10ms

I- R,hJC' 3.12 KiW
4V

0.2

If'

O. 1
1.0

10
VDS. DRAIN TO·SOURCE VOLTAGE (VOLTSI

UN)TRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

I-rl~GLf P~~flll

4-330

II I 11111:

10t±
DC

U~li3

UFN220,2

50 100 200
10
20
VDS, DRAIN·TD-SDURCE VOLTAGE IVDLTS)

500

PRINTED IN U.S.A.

UFN220 UFN221

UFN222 UFN223

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

~
iii

;L

I

n
1-1-

wz

1."

>"

reNO~

II

0-=0.5

o.5

NOTES.

~

r-6.2

0.2

-0.1

::i~

~;; t;jjji~

;~ O. 1 =0.05
0<
-0.02
:o:~ 0.05

"w
:2:

-

~2~

1 DUTY FACTOR, 0"

;;;:0.01

,r"....

~

0.02

J

0,01

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

:i

2. PER UNIT BASE" RthJC = 3.12 DEG. elW.

3. TJM • TC• 'OM Z,hJcft).

10-5

10-2

t"

1.0

10

SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current

,
TJ

/'

V

/

2

V

LI/ /

V

IY/

,/Ii
U

l~!i5oJ

Ty-

-

TJ!125,1

TJ;z 250C

-

~

~

1#
TJ= ISOaC

-y

Vas> 'Olon) x ROSlon) max

8Oi"p",!,"'ii-

o
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Fig, 9 - Normalized On-Resistance Vs. Temperature

Fig.8 - Breakdown Voltage Vs. Temperature

,

22

12

11

,
,

~

~s 10

Ww

"'N
m::;

".

w ..

~~

;S~ 09

m-

'V

./'

.,..,

"...

"z
~

'"

~

0

Ww
~~
,,~

,/

.... 0

z~

~

t

~
40
80
120
TJ. JUNCTION TEMPERATURE JDC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

/

V
14

//

0"
","'
0'"

,/

08 5

075
-40

'S

~

z

0

z

~•

V

w

>

~

TJ" 2SoC

I

10. ORAIN CURRENT (AMPERES)

~

I

I
'0

to

co

"""

TJ" 1500 C_

'0

~V

0.6

1/
VGS = lOV

""
0.2

160

/

-40

ID,'2A

40

80

120

TJ. JUNCTION TEMPERATURE (OC)

4-331

PRINTED IN U.S.A.

UFN220

Fig. 10 - Typical Capacitance VI. Drain·tc.source Voltage

Cgd.::'

1\

~

C. . .

\

\

\

\

VOSj40V
5

-

Cds+~~:

-"' -t5::
-

-Cdl+Cgd

.,

'~P'

V

1'-0..

/

I

IO-6A
fOR TEST CIRCUIT

sr

50

I--

FlG,URE Ii

12

0"

16

20

TOTAL GATE CHARGE {,CI

Fig. 13 - Maximum Drain Current VI. Case Temperature

Fig. 12 - Typical On-Resistance VI. Drain Current

.........

1.5

j

~

:--......

:c
E
~

........

VGS -IOV

z 0.5

J

..--V

V"

~

"-

r--.....

UFN22Il,221

- I-UFN:~ ........ i'

1.0

z

j

~

.~ ~

-C ..

10
20
30
40
VDS. DRAIN·TO·SOURCE VOLTAGE {VOL TSI

~
..."
..:!""

I

-.YOS = 16OV, UFN22Il, 222

c,..

i..

~

VOS'IOOV ~

I

-

1

\"

400

200

.L .1

,
1'1 MHz
Co. - C,. ~
SHORTEOC.. -Cgd

800

~

UFN223

20
JGS·J

.;

UFN222

Fig. 11 - Typical Gate Charge Vs. Gate·tc-Source Voltage

1000

~ 600
w

UFN221

t--.,.'

---

"- .......

"" ~\

...-.--1-"""
VGS' 20V

,

,~

:.g~~u~~~~~:E~N~~r:LC~JR.Ri5~1.p~~:!~~G
EFFECT OF 2.0 '" PULSE IS MINIMAL.l
10
15
10, DRAIN CURRENT {AMPERESI

o

20

25

50

75
100
TC, CASE TEMPERATURE (OCI

125

ISO

Fig. 14 - Power VI. Temperature Derating Curve
40

~

35

~

~

30

I\.
I\.

2&

'\

;::

:

20

'"~

15

~

\

"

~

10

"\.

20

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

100
60
80
Te. CASE TEMPERATURE 1°C)

40

4-332

120

\
140

PRINTED IN U.S.A

UFN220 UFN221

UFN222 UFN223

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit
VARY tp TO OBTAIN
REQUIRED PEAK IL

VGS.R

OUT
'L+--_>---~_,......J

Fig. 17 - Switching Time Test Circuit

v,
PULSE

GENERATOR

r------,
:

1

SOU

1
1

L ____ .1

-''--~TO

SCOPE

so!!

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

12V
BATTERV

-

or=ll1.SmA

--'\,IV',,........-A,J\I\.,.....-o
IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL, (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-333

-VOS

10
CURRENT
SHUNT

PRINTED IN U.S A.

UFN230
UFN231
UFN232
UFN233

POWER MOSFET TRANSISTORS
200 Volt, 0.4 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RosI• n• and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

YDS
200V
150V
200V
150V

Part Number

UFN230
UFN231
UFN232
UFN233

ROS(on)

ID

0.40
0.40
0.60
0.60

9.0A
9.0A
8.0A
8.0A

MECHANICAL SPECIFICATIONS
UFN230 UFN231

UFN232 UFN233

TO-204AA (TO-3)

222210815)

"13:t~.AX
D'A~~
SEATING
PlANE

T
~~I~·IIDIA.-t

TWO PLACES

10.16(0401 MIN
TWO PLAces

jUI~l~'1
•
1 014

TWO PLACES

DRAIN
(CASEI
SOURCE

MA~lg:;gjt
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4-334

~UNITRODE

UFN230 UFN231

UFN232 UFN233

ABSOLUTE MAXIMUM RATINGS
Parameter

UFN230

UFN231

UFN232

UFN233

200

150

200

150

V

200

150

200

150

V

9.0

9.0

8.0

B.O

A

6.0

6.0

5.0

5.0

A

36

36

32

32

A

75

±20
(See Fig. 14)

0.6

(See Fig. 14)

CD

VOS

Drain - Source Voltage

VOGR
10@TC = 25·C

Drain - Gate Voltage (RGS - 1 MmgJ
Continuous Drain Current

10@TC = 100·C Continuous Drain Current
Pulsed Drain Current @

10M
VGS
PO@Tc

Gate - Source Voltage
s

25·C

Max. Power Dissipation
linear Derating Factor

Inductive Current, Clamped

ILM

Operating Junction and
Storage Temperature Range

TJ
T stg

Lead Temperature

V

W
W/K

ISee Fig. 15 and 16) L = 100"H
I
32
36

I

36

Units

I

A

32

-55 to 150

·C

300 (0.063 In. (1.6mm) from case for 1Os)

·C

ELECTRICAL CHARACTERISTICS @ TC = 25°C (Unless otherwise specified)
Parameter

BVOSS Drain - Source Breakdown Voltage

VGSlth) Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

UFN230
UFN232

200

-

-

V

UFN231
UFN233

150

-

-

V

10 = 250"A

ALL

2.0

-

4.0

V

100
-100

nA

VOS = ~GS' 10 = 250,.A
VGS = 20V

nA

VGS = -20V

250

"A

VOS = Max. Rating, VGS = OV
VOS_= Max. RatingxO.B, VGS = OV, TC - 125·C

IGSS
IGSS

Gate-Source Leakage Forward

ALL

Gate-Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

10(on)

On-State Drain Current

®

ROS(on) Static Drain-Source On-State
Resistance ®

-

-

-

-

-

-

1000

"A

UFN230
UFN231

9.0

-

-

A

UFN232
UFN233

B.O

-

-

A

UFN230
UFN231

-

0.25

0.4

0

UFN232
UFN233
ALL

-

0.4

0.6

0

ALL

VGS = 10V, 10 = 5.0A
4.B

-

SUl)

-

600

BOO

pF

250

450

pF

BO

150

pF

30

ns

50

ns

ALL

-

-

50

ns

ALL

-

-

40

ns

Total Gate Charge
IGate-Source Plus Gate-Drain)

ALL

-

19

30

nC

Ogs

Gate-Source Charge

ALL

Gate-Drain ("Miller") Charge

ALL

-

10

Ogd

9.0

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

Forward Transconductance

Ciss
Coss
Crss

Input Capacitance

ALL

Output Capacitance

ALL

Reverse Transfer Capacitance

ALL

tdlon)

Turn-On Delay Time

ALL

tr

Rise Time

ALL

tdloffl
If

Tum-Off Delay Time
Fall TIme

Og

VGS = OV

VOS ) 10(on) x ROS(on) max.' V GS • 10V

3.0

®

9fs

Test Conditions

-

nC

nH

vos ) 'O(on) x KOS(on) max.'

10 - 5.0A

VGS = OV, VOS = 25V, f = 1.0 MHz
See Fig. 10
VOO ~ 90V, 10
See Fig. 17

= 5.0A, Zo -

150

(MOSFET switching times are essentially
independent of operating temperature.)

=

VGS
10V, 10 - 12A, VOS. O.B Max. Rating.
See Fig. 1B for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured between
the contact screw on

Modified MOSFET
symbol showing the

header that is closer to
source and gate pins

inductances.

internal device

and center of die.
LS

Internal Source Inductance

ALL

-

12.5

-

nH

Measured from the
source pin. 6 mm
(0.25 in.) from header
and source bonding
pad.

-$

THERMAL RESISTANCE
Junction~to~C8se

Case-to-Sink

Mounting surface flat, smooth, and greased.

Junction-ta-Ambient

Free Air Operation

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. 1617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-335

PRINTED IN U.S.A

•

UFN230 UFN231

UFN232

UFN233

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
(Body Diode)

Pulse Source Current
(Body Diode) @

®

Diode Forward Voltage

-

-

9.0

A

UFN232
UFN233

-

-

8.0

A

UFN230
UFN231

-

-

36

A

UFN232
UFN233

-

-

32

A

UFN230
UFN231

-

-

2.0

V

TC = 25·C.IS = 9.0A. VGS = OV

UFN232
UFN233

-

-

TC = 25·C.IS = S.OA. VGS = OV

trr

Reverse Recovery Time

ALL

ORR

Reverse Recovered Charge

ALL

ton

Forward Turn-on Time

ALL

 IO(on,!x ROSlon) max.

I-- r--

Itl

8

H

I

VGS=~V

-

I

r--

TJ=/'250C

Tr 250C
TJ . -5S DC
5V-

2

80
Vos. DRAIN·lO·SOURCE VOLTAGE (VOL IS)

'00
VGS. GATE·TO-SOURCE VOLTAGE (VOLTS)

Fig. 4 - Maximum Safe Operating Area

Fig. 3 - Typical Saturation Characteristics

'0

~~ Lt:

',ov
~ ~ i'-- 9V_

. . .-. - Jo"spuLETElr

~ tI< ~ ~:Vv

~r/

"

J .... ..-

~

~

J

",1

6V

-

VGS=5V-

-

lOOms

j"-

",.

-

UFN231.3

DHUItJao.2
II

1'1111
50

Vas. DRAIN·TO SOURCE VOLTAGE (VOL IS)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1I1

'II

LL,'/

r--

4V -

~ '-//J
.........

r--

60

40

20

A

""-.

'00

200

500

Vas. DRAIN·Ta·SOURCE VOLTAGE (VOL TSI

4·336

PRINTED IN U.S.A

UFN230 UFN231

UFN232 UFN233

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-ta-Case Vs. Pulse Duration

...z

n
~~

wz

II

J

w

~
;L

•

1.0

>~

0 .. 0.5

o.5

NOTES

El.SL

r-O.2

ffi~ 0.2
NO
::::i~

0.1

i~ 0.1

~2~

0.05

0"
z.~ 0.05

0.02
~0.01

Uw

~

l~

%

002

~

0.01

J

1 DUTY FACTOR, 0"

2 PER UNIT 8ASE" RthJC" 1 67 DEG C/W

I

I I

3 TJM - Te = POM ZthJCttl

j
10.2

10-4

10-5

:~

SINGLE PULSE iTRANSIENT

LrfIRMA~ '~PEOtNfEII

10-1

1.0

10

tl,SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source-Drain Diod. Forward Voltage

10

.-

,

r--

_.

---

TJ' 5!J°C

r....- .-.--

V V

1'/ V...... I-"'

Ii. V
If

-

TJ- 25 0 C

TJ

=<

12&OC

f--

I

vas> 1010n) x ROS(on)

~

m!x

I

I

aOllspUlSETEST

10
10. DRAIN CURRENT (AMPERES)

VSQ, SOURCE-TO-DRAIN VOL lAGE (VOL IS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature

12 5

22

~

~

~

11 5

>
z

g
~§

~

105

~N

~:o

w""
~q~

. /V

~"

~~ 095
z

~.

~

I/"

.-- ~

....- V

V
./

V"

08 5

~

015

-40

40
80
120
TJ, JUNCTION TEMPE RATURE (oC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

06

./

/"

/

V

V

V
vGS" IOV

./

IDI·3.5~

02
160

·40

4D

80

120

TJ, JUNCTION TEMPERATURE (DC)

4-337

PRINTED IN USA

UFN230 UFN231

Fig. 10 - Typical Capacitance Vs. Drain·to-Source Voltage
2000

Fig. 11 - Typical Gate Charge V,. Gate·to-Source Voltage

'---'--'--'-"',r--.--..---.-,...-,--,

20

V~S'O

I

~

~
w

'"

~>

VOS 40V '-...,

J~

Ii.

~

I

if

I

50

~

16

........

VGS"10V

0.6

I"-. .......

......... 1........

...........

-~-UFN232~

z

w

"

-

0.'

V r.....-::

0

~

~
0

j-i 0.2

r-

32

40

I

30

20

UFN230.231

......... 1'-.,

~" ~

'" "

~
VGS = 20V

ROSlon) MEASURED WITH CURRENT PUJE OF
2.0"'1 DURATION. INITIAL TJ = 25°C (HEATING
EFFECT OF 2.0"' PULSE IS MINIMAl.)
10

24

Ii

10

0

.,5'"

SiE FlyRE

Fig. 13 - Maximum Drain Current Vs. Case Temperature

,

"z

~

10'12A
FOR TEST CIRCUIT

~

0,. TOTAL GATE CHARGE InC)

Fig. 12 - Typical On·Resistance VI. Drain Current
0.8

,.
,

15 - , . . - VOS = 100V
1'-.....,
VOS ·1601', UFN230. 232.

~ 10

10
20
30
VOS. ORAIN·TO-SOURCE VOLTAGE IVOLTS)

UFN232 UFN233

o

40

25

50

10. DRAIN CURRENT IAMPERES)

15

100

~

125

,

'1~

150

TC. CASE TEMPERATURE 10C)

Fig. 14 - Power VI. Temperature Derating Curve
80

10

5
~

z

60

-

""'~

'\

50

'\

0

E
iii

40

'"

30

.P

20

~

E

~

'\.
I\.

10

'i\
20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

40
60
80
100
TC. CASE TEMPERATURE 1°C)

4·338

120

140

PRINTED IN U.S.A

UFN230 UFN231

UFN232 UFN233

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit

•

VARY tp TO OBTAIN
REGUIREDPEAK IL

V.S·R

'l ....----------..:,...;.......J

Fig. 17 - Switching Time Test Circuit

v,

Zo

--~~SCOPE

- .....

150

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

LJI1.S mA

o

-..I\."'I',~""'-'VIA~-o

IG
CURRENT
SHUNT

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-339

·VOS

10
CURRENT
SHUNT

PRINTED IN U.S A

UFN240
UFN241
UFN242
UFN243

POWER MOSFET TRANSISTORS
200 Volt, 0.2 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROBlon. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control;freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high· power switching
applications such as switching power supplies, motor controls, and wide·band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFN240
UFN241
UFN242
UFN243

200V
150V
200V
150V

O.lSO
O.lSO
0.220
0.220

lSA
lSA
16A
16A

MECHANICAL SPECIFICATIONS
UFN240 UFN241

UFN242 UFN243

TO-204AE (TO-3 modified)

2222 (0875)
342

MAX CIA

'B~m;~

IO":L~~
T

SEATING
PLANE

,.60IIt.D&3I D1A

flrllilim

TWO PLACES

n:. 11'1;'1,

II
-'f

HI91~::OI

18
0
TWO PLACES

2667
I 0501 MAX

OIA
TWO PLACES

DRAIN

ICASEI
SOURCE

l~gl~'::lt
f MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/S3

4-340

[U] UNITRODE

UFN240 UFN241

UFN242 UFN243

ABSOLUTE MAXIMUM RATINGS
UFN240

UFN241

UFN242

UFN243

Units

200

150

200

150

V

200

150

200

150

V

Continuous Drain Current

18

18

16

16

A

10@TC = 100°C

Continuous Drain Current

11

11

10

10

A

10M

Pulsed Drain Current

72

72

64

64

VGS
PO@TC=25°C

Gate - Source Voltage

Parameter

CD

VOS

Drain - Source Voltage

VOGR
10@TC=25°C

Drain - Gate Voltage (RGS = 1 Mill

CD

®

Max. Power Dissipation

125

(See Fig. 141

W

1.0

(See Fig. 141

W/K

I

72

(See Fig. 15 and 161 L - 1OO~H
72
I
64

Operating Junction and
Storage Temperature Range

TJ
T stg

V

Linear Derating Factor
Inductive Current, Clamped

ILM

A

±20

Lead Temperature

A

64

I

-55to 150

°C

300 (0.063 in. O.6mml from case for 10s1

°C

ELECTRICAL CHARACTERISTICS @ TC = 25"C (Unless otherwise specified)
Parameter

BVOSS

Drain - Source Breakdown Voltage

VGS(thl Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

UFN240
UFN242

200

-

-

V

UFN241
UFN243

150

-

-

V

10 = 250~A

ALL

2.0

-

4.0

V

VOS = VGS' 10 = 250~A

-

100

nA

VGS = 20V

-100

nA

VGS = -20V

IGSS

Gate-Source Leakage Forward

ALL

-

IGSS

Gate-Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

-

10(onl

®

ROS(on) Static Drain-Source On-State
Resistance ®

®

~A

VOS = Max. Rating, VGS

1000

~A

VOS = Max. Rating x 0.8, VGS = OV, T C = 125°C

UFN240
UFN241

18

-

-

A

UFN242
UFN243

16

-

-

A

UFN240
UFN241

-

0.14

0.18

(l

UFN242
UFN243

-

0.20

0.22

0

V OS ) 10(onl x ROS(onl max.' V GS = 10V

VGS = 10V, 10 = IDA

9fs

Forward Transconductance

ALL

6.0

9.0

-

S([JI

Ciss

Input Capacitance

ALL

-

1275

1600

pF

-

500

750

pF

160

300

pF

Coss

Output Capacitance

ALL

erss

Reverse Transfer Capacitance

ALL

td(onl

Turn-On Delay Time

ALL

tr

Rise Time

ALL

VGS

= OV, VOS =

See Fig. 10

= 75V, 10 =

16

30

ns

VOO

60

ns

See Fig. 17
(MOSFET switching times are essentially
independent of operating temperature I

Turn-Off Delay Time

ALL

80

ns

ALL

-

40

Fall Time

31

60

ns

Qg

Total Gate Charge

ALL

-

43

60

nC

Gate-Source Charge

ALL

16

-

nC

Qgd

Gate-Drain ("Miller") Charge

ALL

-

27

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

IDA, Zo = 4.70

V GS = 10V, 10 = 22A, VOS = 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured between

Modified MOSFET

the contact screw on

symbol showing the
internal device
inductances.

header that is closer to
source and gate pins
and center of die .

LS

Internal Source Inductance

ALL

= IDA

25V, f = 1.0 MHz

27

td(offi

Q gs

V OS ) 10(onl x ROS(onl max.' 10

-

tf

(Gate-Source Plus Gate-Drain)

= OV

250

-

-

ALL
On-State Drain Current

Test Conditions
VGS = OV

-

12.5

-

nH

Measured from the
source pin, 6 mm
(0.25 in.) from header
and source bonding

pad.

.$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthCS

Case-to-Sink

Mounting surface flat, smooth, and greased.

RthJA

Junction-to-Amblent

Free Air Operation

UNITROOE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02<73 • TEL. (6171 861-6540
TWX (710) 326-6509 • ·TELEX 95-1064

4-341

PRINTED IN U.S.A

•

UFN240 UFN241

UFN242 UFN243

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

Continuous,Source Current

(Body Diodel

ISM

Pulse Source Current

(Body Diodel

VSD

®

Diode Forward Voltage ~

Reverse Recovery Time

Modified MOSFET symbol

UFN240
UFN241

-

-

18

A

UFN242
UFN243

-

-

16

A

UFN240
UFN241

-

-

72

A

UFN242
UFN243

-

-

64

A

UFN240
UFN241

-

-

2.0

V

UFN242
UFN243

-

-

1.9

V

TC = 25·C, IS = 16A, VGS = OV

ALL

-

650

ns

TJ = 150·C, IF - 18A, dlF/dt - 100A/!,s

4.1

-

pC

T J - 150·C, IF = 18A, dlF/dt = 100A/!,s

showing the integral
reverse P-N junction rectifier.

~
TC = 25·C, IS = 18A, VGS = OV

t"
QRR'

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intnnsic turn-on time is negligible. Turn-on speed is substantially controlled by LS

(j)TJ = 25·C to 150·C.

~Pulse Test: Pulse width'; 300I'S, Duty Cycle'; 2%.

@

+

LO

Repetitive Rating: Pulse width Ii~ited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 2 - Typical Transfer Characteristics

Fig. 1 - Typical Output Characteristics
40
10V
32

r--

40

"
~~J.

T1=·55~C~

llllPutsETJr- -

'":-'9V

32

~J'25~C~

T

125;C"

7V

f---8DPI PULSE TEST

~DS > ~D(On) RDS~On) m~x.
IX

,

vGs' 6~

AI
hI
" -II II

'I

"rtf

i,,JI

J

5V

..... ~

41v

50

20
30
40
10
VDS, DRAIN·ro-SOURCE VOLTAGE (VOLTSI

10
VGS, GATE·TO·SOURCE VOLTAGE (VOLTSI

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum S8fe Operating Area
100

r-JIJ.S PUlSE TEJr

~~
~?
~~

.......
~ y.

N IN tHI S A EA 'tL!M TED

y RO~(onl

=V FN242,3

50

32

o ERATI

=UFN240 1

40

,,,"

UFN240 1

20

10~s

10rfJ.S

UFN242,3

......Iv-

1

~r

6

8

~

~

~ i;-""

lOms
lOOms

VGS=;V-

;;.-""

I='TC=25'C
TJ=150·C MAX

0.2 I-nGLf P,"iS,E,

Jv

o. 1

4

10

VOS, DRAIN·TO·SOURCE VOLTAGE (VOLTSI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

DC=

f:::

r- RthJC = 1 0 K/W

~v-

~
1

T'

UFN241,3

/I I II I
5

U~240. 2

111111
10

20

50

100

11I11
200

500

VOS. DRA'N·TO-SOURCE VOLTAGE (VOLTSI

4·342

PRINTED IN U.S A.

UFN240 UFN241

UFN242 UFN243

Fig. 5 - Maximum Effective Transient Thermal Impedance. Junction·to·Case Vs. Pulse Duration

...z
~

I

2

II

;L

"'1:: 1.0
wz
>=>
0-05
.,~
<.>w O. 5

$~

ffi~ O.2

NO

::i:t!

"':IE
"'00(

0.02

i~
",'"

5 r?OI

:z.~ 0.0

~
j

El.JL

I---~.I

O.11:::=0.05

~~

0.0 2
0.0 I

•

NOTES.

0.2

1 DUTY FACTOR, 0 '" :21

SINGLE PULSE (TRANSIENT

TIHTETR~~\ IMP iEO~NCE1 I

t-::+:j:::=+:t+l+i:ft:=+=+:=j=+:t+t~11II+=~I+=
t
'H::t:jtj:j:~t+=+:j:::~W+=++ 2 PER UNITBASE • R,hJC • 1.0 OEG. CIW.
t3. TJM-TC=POMZthJC(t)

10-5

10-4

10-2

10-3

10-1

10

1.0

t,.saUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage

19.0

50

",
~ 15.2

~

iii

./

~
~

".,

/ ...,. ..-

~11.4

Q

TJ "'-55°C

~ 20

T~' 250lc

z

...

~

1/,

10

z

;;:

:5

~ II/I /
~

""

~

~
w

T~= 12JoC- t--

~

1.6

3.8

A'f"

t3

I

5

-

r- TJ • 150 0 cl

I

TJ= 25°C

B?IlS PU~SE TES1T

r

Vas> 10(onl x ROS(on)

max.
1.0

16

24

32

40

I ,
o

10. ORAIN CURRENT IAMPERESI

04

0.8

1.2

2.0

1.6

VSO. SOURCE·TO-DRAIN VOLTAGE (VOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature
2.5

1.25
w

<.>

z

~

,. V'

5

...,.V

./

~

2.0

,/

".,

... V

,. V

V

./

V

V

V

/

/'

VGS = IOV

19AI
0.75
-40

40

80

120

40

160

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

80

120

160

TJ. JUNCTION TEMPERATURE (DC)

TJ, JUNCTION TEMPERATURE (DC)

4-343

PRINTED IN U.S.A

UFN240 UFN241

Fig. 10 - Typical Capacitance Vs. Drain·to-Source Voltage
2000

I--- C..

a Cgd

CI1I Cgd
C.'" Cds + Cp+Cgd ,

lalMHz

-

I

..... "C",+Cgd

r-

\
\
4flO

\

0

_ VGS a OV

~
1600

Fig. 11 - Typical Gate Charge Vs. Gate·to-Source Voltage

J J.

Cia· till + CId_ Cds SHORTED

~

.

5

vos' 40V"",
I

I

r-f--- VOS'100V
""I
I ""vos' l6OV. UFN240. 242",
0

i'

--

"~
".... 1"cl
--;-.

""

10
15
20
25
30
35
40
VOS. ORAIN·TO-SOURCE VOLTAGE (VOLTSI

~

45

-

/

10

50

40

60

80

0,.. TOTAL GATE CHARGE (nCI
Fig. 13 - Maximum Drain Current V,. Case Temperatura
10

I

["'.
16

~ 0.4

i

..........

.........

......... ......... r-....
.......

V S'lOV

~ 0.3

i"- t'-.

UFN240.241

....... ~,

w

~

0.2

V

z

~

gO. 1

;

#
'0'21A
FOR TEST CIRCUIT
SEE FIGrRE 18
1

V

0.5

~

~

/

5

Fig. 12 - Typical On·Resistance Vs. Drain Current

~

UFN242 UFN243

UFN242. 243

-

J

'~

k~'10V

'1~

ROS,,"I MEASURED WITH CURRENTlpULS! OF
2.0~s DURATION. INITIAL TJ = 25°C. (HEATING
EFFECT OF 2.0 p.s PULSE IS MINIMAl.l
10

,~

40

60

-

'\,

r-0
25

100

80

'0. ORAIN CURRENT (AMPERESI

75
100
TC. CASE TEMPERATURE ('CI

50

115

150

Fig. 14 - Power Vs. Temperature Derating Curve
140
110

- "'

0

"

:\..

"

~

"

\...

"\

~

"

I\...

0

10

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

40
60
80
100
TC. CASE TEMPERATURE ('CI

4-344

120

"

\...

140

PRINTED IN U.S.A.

UFN240 UFN241

UFN242 UFN243

II

Fig. 16 - Clamped Inductive Wavaforms

Fig. 15 - Clamped Inductive Test Circuit
VARY •• TO OBTA'N
REQU.REO PEAK 'L
V a S . R "OU_T........r Y
·L+-----o-----~~~~

Fig. 17 - Switching Time Test Circuit
7SV

am

ADJUST RL TO OBTAIN
SPECIFIED 10

Vos

r;U~ - - -O_li--__-o-_--'I.J-~
I GENERATOR
Sl I
I :JJlRCE
LIMPEDANCE
____ J

Fig. 18 - Gata Charge Test Circuit
+Vos
(ISOLATED

SUPPlVI

-

I:[1.5 mA

o

\r--4-'Vv\,...-O -VOS
IG
CURRENT
SHUNT

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-345

10
CURRENT

SHUNT

PRINTED IN U.S A.

UFN250
UFN251
UFN252
UFN253

POWER MOSFET TRANSISTORS
200 Volt, 0.085 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROBlon. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFN250
UFN251
UFN252
UFN253

200V
150V
200V
150V

0.0850
0.0850
0.1200
0.1200

30A
30A
25A
25A

MECHANICAL SPECIFICATIONS
UFN250 UFN251 UFN252 UFN253

TO·204AE (TO·3 modified)

22.22(08751

10I3,±~.AX
DlA~~
SEAtiNG

T

PLANE

I&:'I'UJIOIA I
141
TWO PLACES

I

u191048m

181044
TWO PLACES

2661
11 0501 MAX

U:I~:l;U OIA.
TWO PLACES

DRAIN
ICASE)

lAnl~'mlt
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4·346

~UNITRDDE

UFN250 UFN251

UFN252 UFN253

ABSOLUTE MAXIMUM RATINGS
UFN250

UFN251

UFN252

UFN253

Units

VOS

Drain - Source Voltage (j)

200

150

200

150

V

VOGR
10@TC= 25°C

Drain - Gate Voltage IRGS - 1 Mill (j)

200

150

200

150

V

Continuous Drain Current

30

30

25

25

A

10@TC - 100°C

Continuous Drain Current

19

19

16

16

A

10M

Pulsed Drain Current @

120

120

100

100

A

VGS
PO@TC=25°C

Gate - Source Voltage

Parameter

linear Derating Factor

ILM

Inductive Current, Clamped

TJ
Tstg

Operating Junction and
Storage Temperature Range

V

±20

Max. Power Dissipation

I

120

Lead Temperature

150

ISee Fig. 141

W

1.2

ISee Fig. 141

W/K

ISee Fig. 15 and 161 L = 100~H
120
I
100

A

100

I

-55to 150

°c

30010.063 In. 11.6mml Irom case lor 10s1

°c

ELECTRICAL CHARACTERISTICS @ TC = 25°C (Unless otherwise specified)
Parameter

BVOSS Drain - Source Breakdown Voltage

VGSlthl Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

UFN250
UFN252

200

-

-

V

VGS = OV

UFN251
UFN253

150

-

-

V

10 = 250~A

ALL

2.0

-

4.0

V

-

-

100

nA

VGS = 20V

-100

IGSS
IGSS

Gate-Source leakage Forward

ALL

Gate-Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

1010ni

On-State Drain Current

®

ROS(on) Static Drain-Source On-State
Resistance ~

®

Test Conditions

VOS - VGS, 10 - 250~A

nA

VGS = -20V

250

~A

VOS = Max. Rating, VGS - OV

-

-

1000

~A

VOS = Max. RatingxO.8, VGS = OV, TC = 125°C

UFN250
UFN251

30

-

-

A

UFN252
UFN253

25

-

-

A

UFN250
UFN251

-

0.07

0.085

[l

UFN252
UFN253

-

0.09

0.120

[l

ALL

V OS ) 1010ni x ROSlonl max.' VGS = 10V

VGS = 10V, 10 = 16A
16A

9ls

Forward Transconductance

ALL

8.0

14

-

S lUI

Ciss

Input Capacitance

ALL

2000

3000

pF

Coss

Output Capacitance

ALL

BOO

1200

pF

C rss

Reverse Transfer Capacitance

ALL

-

300

500

pF

tdlonl

Turn-On Delay Time

ALL

-

35

ns

VOO - 95V, '0

tr

Rise Time

ALL

100

ns

See Fig. 17

tdloffl
tl

Turn-Off Delay Time

ALL

-

-

125

ns

Fall Time

ALL

-

-

100

ns

(MOSFET switching times are essentially
independent of operating temperature.)

Qg

Total Gate Charge

ALL

-

79

120

nC

(Gate-Source Plus Gate-Drain)

Q gs

Gate-Source Charge

ALL

-

37

-

nC

Qgd

Gate-Drain ("Miller") Charge

ALL

-

42

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

LS

Internal Source Inductance

ALL

-

12.5

-

nH

VOS ) 1010ni x ROSlonl max.' 10

VGS = OV, VOS = 25V, 1= 1.0 MHz
See Fig. 10

V GS = 10V, 10

= 16A, Zo = 4.70

= 3BA, VOS

= O.B Max. Rating.

See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured between
the contact screw on
header that is closer to
source and gate pins
and center of die.
Measured from the
source pin, 6 mm

10.25 in.1 from header
and source bonding

pad.

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthCS

Case-to-Sink

Mounting surface flat, smooth, and greased.

RthJA

Junction-ta-Ambient

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-347

PRINTED IN U.S.A

•

UFN250

UFN251

UFN252

UFN253

SOURCE·ORAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
(Body Oiodel

Pulse Source Current
(Body Diodel @

Diode Forward Voltage ®

Modified MOSFET symbol
showing the integral
reverse P-N junctlqn rectifier.

UFN250
UFN251

-

-

30

A

UFN252
UFN253

-

-

25

.A

UFN250
UFN251

-

-

120

A

UFN252
UFN253

-

-

100

A

UFN250
UFN251

-

-

2.0

V

-

-

1.8

V

T C ~ 25°C. IS ~ 25A. VGS ~ OV

750

-

ns

T J = 150°C. IF - 30A. dlF/dt - 100A/~s

4.7

-

~C

TJ

UFN252
UFN253

~
T C ~ 25°C. IS ~ 30A. VGS ~ OV

ORR

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

IntrinSIc turn-on time IS negligible. Turn-on speed is substantiallv controlled by LS

t"

Reverse Recovery Time

 10(on) x RUS(on) max.

25

.....~
u

1/

80/.lSPULSETEST .

V

40

Fig. 2 - Typica' Transfer Characteristics

.l. J.

50

!;
5

-

i

20

15

z

20

E

5V10

~

0

-

TJ'" 125°C

10

l ---.. JJ

E

-lTJ '25 C

--

4~3.5V
___

~

50

10
20
30
40
Vos. ORAIN.TO-SOURCE·VOlTA.GE (VOL TSI

VGS, GATE·TO·SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typica' Saturation Characteristics

e---

80

8~~~
,~~ ""

~ 12

:!o

A

E

;

,

~

~

~~N250. 1
UFN252,3

;;GS' 5V

I--

UFN250. l'

'V
/

10j.ls
100j.ls

UFN252.3

,

~ '/

~~

1m.

"-

0

10~s

5

~

M

OPERATION IN THIS
AREA IS LIMITED
BY ROSlon)

II I

200

'/'

i

8

'v

9V

,,J PULJTEST

16

z

Fig. 4 - Maximum Safe Operating Area
500

2ll

i

---..

'J,
~J' -50lc
I~ KI

10 ms

Te'" 25°C

4V

M

U

U

~ TJ' 150°C MAX

f--

5
1.0

2.0

VOS. OAAIN·TO·SOUACE VOLT AGE (VOLTSI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

UFN2 51.3~

R'hJC'" 083 K/W

10 I=,SINGLE PULSE

UF N250.2
10

20

50

100

I
DC
200

500

VCS, CRAIN TO·SOURCE VOLTAGE (VOLTS)

4·348

PRINTED IN U.S.A

UFN250 UFN251

UFN252 UFN253

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction·to-Case Vs. Pulse Duration
I

•

o -o.S

~~

~h.2
0.1

....

2

I

1

3nJL
~2~

I~O.OS
f--0.02
S
0.01

NOTES

1. DUTY FACTOR. O· :;

SINGLE PULSE (TRANSIENT
THERMAL IMPEO~NCIEI I

1111111

I

2. PER UNIT BASE - R1hJC' 0.83 OEG. CIW.
3. TJM - TC' POM ZlhJCIII.

I
10-2

10-3

10-4

10-1

1.0

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance V,. Drain Current
0

T~ • -SO~C

.J.-

I.;""

V1;. 2s JC
V. V

6

JV
VI V

2

i

V~S > 1~I'nl

TJ -1S0 OC

5

1

i

V

II

'L
TJ'150'c1

IY

z

~
~

',ROSI'?I m... -

BOjJ.S PULSE TEST

V

10

TJ=25 0 C

~

~
10

20

1.0
30

'a. DRAIN CURRENT (AMPERES)

40

50

o
VSO' SOURCE·TO·ORAIN VOLTAGE IVOLTSI

Fig. 8 - Breakdown Voltage V,. Temperature

Fig. 9 - Normalized On·Resiltllnce VI. Temperature
2.4

v~s"L

1.2 s

I

s

Sv- . /

V

-' ~

......
~

w
u

-

;

I--'

1.1'

1.8

/

V
....... . "
O. 6

40

80

120

0.2

1M

TJ, JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

I

'0"5A

2.2

z

S
0.1 5
-40

i"""

V~

TJ" 260 c

10 2

:Ii

TJ" 125 0C

~r/

8

4

Fig. 7 - Typical Source-Drain Diode Forwlrd Voltage

4-349

L

IL

f'

~

-40

40
120
80
TJ. JUNCTION TEMPERATURE I'CI

1M

PRINTED IN U.S.A

UFN250

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
4000

3200

:- 2400

;!

~

1600

I VG~'O

.I

\

.\

\

800

IVD).OV

-

Ct

c

I
I
Vas = IOOV
I

"

~~

I
C:u

"-

I'.....

:r-r--

__ Grss

10

20

/

30

40

/

..
u

z

FOR TEST CIRCUIT

~

24

(HEATING EfFECT OF 2 0 ,.1.5
-PULSE IS MINIMALl

~
z

r-......
..........

..........

UFN250,251

UFN252, 253"-

0.14

.......

=>
0

:;
:;;

~

g

/

'"

~

./,

~

40

120

80

~

\~

/VGs=20V

.--

i,.....--":
o

,"

./

)

0.10

0.06

'" "'-"- "'-

..........

r-- -

0

~

140

112

I"'-. .......

t;

u

84

Fig. 13 - Maximum Drain Current Vs. Case Temperature
3D

I

56

Og. TOTAL GATE CHARGE (nC)

RaS(on) MEASURED WITH
CURRENT PULSE OF
2.0 /.IS OU RATlON
INITIAL TJ = 25 0C

VGS= IOV

f--

SjE FIG1URE '18
28

0.22

018

"

10 '38A

50

Fig. 12 - Typical On·Resistance Vs. Drain Current

~

~

~ rY

Vas. DRAIN-IO·SOURCE VOLTAGE (VOLTS)

.

I

c,u

"

~

-vas ·16OV, UFN250. 252 t'--.

-

I

\ ~

oj

I 1._

=Cgd

tOIS = Cds+ Cvs+
91
gd
"=Cds+Cgd

l~

UFN253

20

.

,.IMH' I

UFN252

Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage

C'IS '" Cgs + Cgd, Cds SHORTED

em

UFN251

a

160

25

100
75
Te. CASE TEMPERATURE (OC)

50

10, DRAIN CURRENT (AMPERES)

125

150

Fig. 14 - Power Vs. Temperature Derating Curve

'\..

140

~

120

'\,
~

::

~ 100

z

o

~

80

'\

ill
<5
~

60

~

~ 40
20

20

UNITRODE CORPORATION· 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

'"

40
60
80
100
Te' CASE TEMPERATURE (OC)

4-350

~

120

i\
140

PRINTED IN USA

UFNF250 UFNF251

UFNF252

UFNF253

•

Fig. 16 - Clamped Inductiv. Wav.forms

Fig. 15 - Clamped Inductiv. T.st Circuit

Fig. 17 - Switching Time Test Circuit
El

~~~~~TE~l,~O OBTAIN

Rl
VOS

r;U~ - - -o-li---O----"--t-::t'
I GENERATOR
.fl I
I ~~RCE
IMPEDANCE
L ___ J

Fig. 18 - Gat. Charge Test Circuit

+Vos
(ISDLATEO
SUPPLY)

-

o~I.5mA

--"'N'Ir.....-'V"',.--Q
IG
10
CURRENT
SHUNT

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-351

'":"'

-Ves

CURRENT
SHUNT

PRINTED IN U.S.A.

UFN320
UFN321
UFN322
UFN323

POWER MOSFET TRANSISTORS
400 Volt, 1.8 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roseon. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(onl

ID

UFN320
UFN321
UFN322
UFN323

400V
350V
400V
350V

1.80
1.80
2.50
2.50

3.0A
3.0A
2.5A
2.5A

MECHANICAL SPECIFICATIONS
UFN320 UFN321 UFN322 UFN323

TO-204AA (TO·3)

22.22(0115)
342

MAX OIA

'~1lI~=

"13:L~~.
T

SEATING

PLANE

~;YIUaIDIA-I1--

TWO PLACES

10.16(0.4OIMI"
TWO PLACES

a:l~lta OIA
TWO PLACES
DRAIN

(CASE)

11 11 (044O)t

..-mmiIJ

t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4-352

~UNITRDDE

UFN320 UFN321

UFN322. UFN323

ABSOLUTE MAXIMUM RATINGS
UFN320

UFN321

UFN322

UFN323

400

350

400

350

V

400

350

400

350

V

Continuous Drain Current

3.0

3.0

2.5

2.5

A

10@TC = 100°C Continuous Drain Current
Pulsed Drain Current @
10M

2.0

2.0

1.5

1.5

A

12

12

10

10

Parameter

 'Olon) x ROS(on) mix .

3

J

J

II

uv

TJ=2S oC

V-

I

TJ= -SSoC

I

1

I

4

16

1

2U

VGS. GATE TO SOURCE VCilTAGE (VOL TSI

VOS. DRAIN·lQ·SOURCE VOLTAGE (VOLTS,

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
50

10V

B.GV

~ ~V

I
12

.. J,pu+"J,- r- r--

20

8lf

OPERATION IN THIS"
AREA IS LlMITEO
BY ROSlon)
--

UFN320,1

UFN322.3

.Iv
I

5

UFN320.1

I

"r"
200

f-- R1hJC' 3.12 K/W
o. 1 FSINGLE PULSE

10

3110

VOS. DRAIN·TO.sOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

I'

f-- TC' 2.0C

o.2 f--TJ"500CM AX.

I
100

III
1m.

5

uv
1

lIJ~.
r...

I

2

lOllS

"-

~,

2 UFN322.3

vGs···rv

3

i"- fl
"-... IJI

':i VJ

4.0V

IT

III

TJ= 1250C

2

,-

UFN321.3,.,
UFN320, 2;;;;
10

20

so

100

2(10

1~~'

~
II
DC

.00

Vos, ORAIN·TO.sOURCE VOLTAGE IVOLTS)

4-354

PRINTED IN U.S.A.

UFN320 UFN321

UFN322

UFN323

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration
0Z

I
I

w

ii

L
~ ....

1.0

n
wz

>=>

ffl:i
NC

0.2

::::i~

NOTES

ELJL

-6.2
-0.1

~2~

i~ 0.1 =0.05
c Ilo(on)l" A~S(on)l ma}

I-

2
TJ '" 25 DC

5
TJ=-55 DC-

V
V

/

-r

-

".

~

TJ = 25°C

-

~

2

I-,- TJ~1251c- -

TJ=150 0 C_

5
r-TJ - 1S0 a C

I

ill

2

I'

~

1

0
10. DRAIN CURRENT (AMPERESI

I

TJ = 25°C

VSQ. SOURCE-TO·DRAIN VO LlAGE (VOL IS)

Fig.8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance VI. Temperature

,

22

5

".
5
..",.

V

~

~

/

...
/
/

. /V

/

/'

06

./
-40

L

/

~

5

07 5

~

'#'

0

,ii. ~

5

=--

;::;;

40

80

120

VGS" lOV
'0-1.5A -

"

-I

1

-

02

160

-40

TJ, JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

/

40

80

120

TJ. JUNCTION TEMPERATURE 10C)

4-355

PRINTED IN U.S.A.

UFN320 UFN321

Fig. 10 - TVPical Capacitance Vs. Drain·to.source Voltage
1000

I
Ciss

BOO

u

z
;'!

§ 400
u'

..

-

~

-

'"

1\ \

\

\

~

gd

VOS! BOV

15

VOS'

~

I

u

~
~

VOS·320V
10

0

~

'~"

,

~

t'--- t--.

Coss

"-

C'"

~OOV b,""'- ~V"

>

CISS

-~

\

200

,1 J

f:'MH~

CIII + Cgd. Cds SHORTED_

't!Cds+Cgd

.......

U

20

COSS=Cds+tc,,+cr

l\

600

Fig. 11 - Tvpical Gate Charge VI. Gate·to.source Voltage

em'" Cgd

\

-'"

IE

V~S)

UFN322 UFN323

tJ

~

II

5

10 ·4A
FOR TEST CIRCUIT

I

jEF'IUREj

V

10
20
30
40
, VOS. DRAIN·ro·SOURCE VOLTAGE IVOLTS)

~

B

50

12

16

0;, TOTAL GATE CHARGE I,C)

Fig. 12 - Tvpical On·Resistance VI. Drain Current

r-20

Fig. 13 - Maximum Drain Current VI. Case Temperature
5

ROS(on) MEASURED WITH CURRENT PULSE OF
2.01'1 DURATION. INITIAL TJ = 250C. (HEATING

EFFECT OF 2.0 ... PULSE IS MINIMALl

VGS"~

/
If/

4

-- l"-

3

VGS' 20V
3

1

-I--

i-""'"

. .V

I'-....

l""- t--.

2

:1"-"""

UFN320.32~_ r---t'--- L'-'"
UFN322. 323
I'~

1

4

0

12

10

,

~

25

50

10. DRAIN CURRENT lAMPE RES)

75
100
TC. CASE TEMPERATURE 10C)

125

150

Fig. 14 - Power Vs. Temperature Derating Curve
40

\

5

1\
f\..

'\

0

'\

5

'\

0
5

20

40

60

BO

100

Te. CASE TEMPERATURE 1°C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

4-356

'"

120

r\
140

PRINTED IN U.S A.

UFN320

Fig. 15 - Clamped Inductive Test Circuit

UFN321

UFN322

UFN323

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBTAIN

REOUIRED PEAK Il

VOS·R

'L +---<)---<..-"",,---,

Fig. 17 - Switching Time Test Circuit
ADJUST RL

E1

l008TA1N
SPECIFIED 10

Rl

v,
PULSE
GENERATOR

r------,
I

I
I

L_

TO SCOPE

50H

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

12V
BATTERY

-

15mA
Or=-TI

IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-357

10
CURRENT
SHUNT

PRINTED IN U.S A

UFN330
UFN331
UFN332
UFN333

POWER MOSFET TRANSISTORS
400 Volt, 1.0 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RDs IO{on) x ROS(on) max.

6

S

sov-- F" """

TJ=+125 0 C

TJ' 2S.~""'oj
3

TJ' -SS.~"-...

,.sv- r-- -

2

,
so

,so

'00

200

I.
.Lt

"r'" ~ ~
2S0

1J
if

300
VGS. GATE·TO·SOURCE VOLTAGE (VOLTS)

Vas. DRAIN·TO-SOURCE VOLTAGE (VOLlS)

Fig, 3 - Typical Saturation Characteristics

Fig, 4 - Maximum Safe Operating Area

'00
OPERATION IN THIS

80

t LS~
PU

ld~Jfv
TEST

JV
f/

-

SO

JFJllO,1 1

VGS= SOY

20

~

i

J

r
I

'.SV- ' -

If

S

4
Vas. DRAIN·Ta-SOURCE VOLTAGE (VOLTS)

1.01,1

-=

O.

I

'ni

,

1.0

I I

,'~,

I

rTc'25 C
5 ~TJ' '50·C MAX.
r R,hJC • 1.61 KJW
O. 2 r-f'NGLE PULSE

O.

4·360

,

,

2

~

'0

10",.

r-UFN332,3

z

......

.t

t=UFN330,1

I
=

40V_

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861·6540
TWX (7101 326·6509 • TELEX 95·1064

UFN332,3
10

>-

I(
I~

REA IS LIMITED
BY ROSlon)

IIII1

'Oms
UFN331,3
UFN330,2

'I~'i'i

::::

50 '00 200
'0
20
VOS' ORAIN·TO·SOURCE VOLTAGE (VOLTS)

iCltt

500

PRINTED IN U.S.A

UFN330

UFN331

UFN332 UFN333

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

ffi

iii

;L

wz
,,~

0

>~

~~

.5

~~ 0.2

0=0.5

NOTES

--6.2

NCO
::i~

i~ 0.1
z,~ 0.05
<'>w

2%

.i''''

-N~

~

0.1

0<

'"

•

_.
1.0

t-I-

0.02

~2~

O.OS

-

0.02
0.01

SINGLE PULSE (TRANSIENT
mRMAt

1 DUTY FACTOR, 0"

I~PEOfNfE\ ( (

~~

2 PER UNIT BASE'" RthJC = 1.67 OEG C/w.
3 TJM-TC=POMZthJC1t).

0.01
10-5

10-4

10-2

10-3

10-1

1.0

10

I,.SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Tvpical Source-Drain Diode Forward Voltage

10

--

If'

./

~

~

\0

co

TJ

>

=

;

Rnsl(an) m1ax

..,

150°C

~

'O(on) x

I'TJ'ISOOC

/I

z

T}-125J~

Vas>

'-""'"

~

TJ" 25°C

........-: ~
V

TJ = 25 0C

z

TJ=-55 0 C -

_r--

~
/; C--" i-"'"

~
"",..

10 1

I

80 "s PULSE TEST

10
\0

I I

TJ' fSoc

o

to. DRAIN CURRENT (AMPERES)

VSQ. SOURCE TO·DRAIN VOLTAGE (VOL IS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig.9 - Normalized On-Resistance Vs. Temperature
12

11 5

/
S

S

......S",.,

~

..,

.."

'"z
to"

....... ......

18

/

~
z

~ffi

...,.. ........

V
14

/V

~!:::!

..,..0'"
g~

/

o~

:Z:~

1.0

~

,/

-i;

~

S

01 S
-40

/
VGS = IOV

06

IOI'20A

/V

1

02
40
80
110
TJ. JUNCTION TEMPERATU RE (DC)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

160

-40

4-361

40

80

120

PRINTED IN U S.A

UFN330 UFN331

Fig. 10 - Typical Capacitance Vs. Drain·to-SOurce Voltage

Fig. 11 - Typical Gate Charge Vs. Gate-to-SOurce Voltage

2000

0

tGS·J

I I

1200

~

"IOCds+Cgd

~

;:;

§ 800
U

I

1
I
Cill '" ell + tgd. Cds SKDATED
em'" egd
CtlICgd
coss =Cds + C.+Cgd

1600

~

f= 1 MHz

-

.'DS· 81v,,-

vps '" 2~OV ......
vas ~ J20V

~

-

-;;,".

~,.

_CO"

-

~ :i;:

400

UFN332 UFN333

J

~

/

~~

10'" 7A

10
20
30
40
VOS. ORAIN·TO·SOURCE VOLTAGE IVOLTS)

SIEE FljURE

'i

24

32

FOR TESTCIRCUIT ) - -

I

16

5(1

40

ag. TOTAL GATE CHARGE InC)

Fig. 12 - Typical On-Resistance Vs. Drain Current

Fig. 13 - Maximum Drain Current Vs. Case Temperature
10

3

VGS'lOV
'/VGS'20V-

/
1

-

V

rr-

/

--

r- r--...
-r- . . . ........
UFN332, 333.......

ROSlon) MEASURED WITH CURRENT PULSE Of

2 Op.s DURATION. INITIAL TJ=250C. (HEATING
EFFECT OF 2.0 1'5 PULSE IS MINIMAL)
10

15

20

25

o

30

25

50

'a. ~RAIN CURRENT (AMPERES)

-

UFN33II.331

75

~~

100

........

125

,

~

150

Te. CASE TEMPERATURE (OC)

Fig. 14 - Power Vs. Temperature Derating Curve
80

70

~
~

z

-

"'\.
'\

60

'\.

"I'..'\

5(1

0

;::
~

..~

40

'\

~ 30
~

~ 20
10

20

40

60

80

'"

100

:\.

120

i\
140

Te. CASE TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-362

PRINTED IN U.S.A.

UFN330 UFN331

Fig. 15 - Clamped Inductive Test Circuit

UFN332

UFN333

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBTAIN

REOUIRED PEAK Il

VDS·R

Fig. 17 - Switching Tim. Test Circuit

_.r--p

v,
TO SCOPE

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

O~1.5mA

IG
CURRENT

SHUNT

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-363

10
CURRENT
SHUNT

PRINTED IN U.S.A

UFN340
UFN341
UFN342
UFN343

POWER MOSFET TRANSISTORS
400 Volt, 0.55 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros.onl and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFN340

400V

0.550

lOA

UFN341

350V

0.550

lOA

UFN342

400V

0.800

8.0A

UFN343

350V

0.800

8.0A

MECHANICAL SPECIFICATIONS
UFN340 UFN341 UFN342 UFN343

TO·204AA (TO·3)

2222(0875)
342

MAXDIA

l1;UI~~~1

"J3:L~~'
T

SEATING
PLANE

~Wm::IIOIA-11-

TWO PLACES

10 16 (O.40) MIN
TWO PLACES

~um:~aDlA
TWO PLACES

DRAIN
(CASE)

II 17 (0 44O)t

lmlmlII

t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4-364

~UNITRODE

UFN340 UFN341

UFN342 UFN343

ABSOLUTE MAXIMUM RATINGS
Parameter

UFN340

UFN341

UFN342

UFN343

400

350

400

350

V

400

350

400

350

V

10

10

8.0

8.0

A

6.0

6.0

5.0

5.0

A

40

32

32

A

CD

VOS

Drain - Source Voltage

VOGR
10@TC=25°C

Drain - Gate Voltage (RGS = 1 Mm

Continuous Drain Current

10@TC= 100°C

Continuous Drain Current

10M

Pulsed Drain Current @

40

VGS
PO@TC = 25°C

Max. Power Dissipation

ILM

Inductive Current, Clamped

TJ
T stg

Operating Junction and

CD

Gate - Source Voltage

±20

linear Derating Factor

Dlain - Source Breakdown Voltage

V GS(th) Gate Threshold Voltage

(See Fig. 14)

A

32

-55to 150

°c

300 (0.063 in. (1.6mm) from case for 10s)

°C

Type

Min.

Typ.

Max.

Units

400

-

-

V

UFN341
UFN343

350

-

-

V

10

ALL

2.0

-

4.0

V

VOS = VGS' 10 - 250~A

-

-

100

nA

VGS

-

-100

nA

VGS = -20V

-

-

250

~A

VOS

-

1000

~A

VOS - Max. Aating x 0.8, VGS - OV, T C - 125°C

UFN340
UFN341

10

-

-

A

UFN342
UFN343

8.0

-

-

A

UFN340
UFN341

-

0.47

0.55

{)

UFN342
UFN343

-

0.68

0.80

0

Gate-Source Leakage Forward

ALL

IGSS

Gate-Source leak~ge Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

ALL
On-State Drain Current

I

UFN340
UFN342

IGSS

10(on)

1.0

W
WIK

=25°C (Un)ess otherwise specified)

Parameter

BVOSS

(See Fig. 14)

Storage Temperature Range
Lead Temperature

V

125

(See Fig. 15 and 16) L = 1 OO~H
40
I
32

I

40

ELECTRICAL CHARACTERISTICS @ TC

Units

®

ROS(on) Static Drain-Source On-State
Resistance ®

®

Test Conditions
VGS = OV

= 250~A
= 20V
= Max. Aating, VGS = OV

V OS ) 10(on) x ROS(on) max.' V GS

E

10V

VGS = 10V, 10 = 5.0A

9f.

Forward Transconductance

ALL

4.0

7.0

-

Sm)

CISS

Input Capacitance

ALL

1250

1600

pF

Coss

Output Capacitance

ALL

-

300

450

pF

VOS ) 10(on) x AOS(on) max.' 10 = 5.0A
VGS = OV, VOS

= 25V, f

= 1.0 MHz

See Fig. 10

C rss

Reverse Transfer Capacitance

ALL

-

80

150

pF

td(on)

Turn·On Delay Time

ALL

17

35

ns

VOO = 175V, 10 = 5.0A, Zo = 4.70

tr

Rise Time

ALL

-

5.0

15

ns

See Fig. 17
(MOSFET switching times are essentially
independent of operating temperature.)

td(off)

Turn-Off Delay Time

ALL

90

ns

Fall Time

ALL

-

45

tf

16

35

ns

Qg

Total Gate Charge

ALL

-

41

60

nC

ALL

-

18

-

nC

(Gate·Source Plus Gate·Drain)

Q gS

Gate·Source Charge

Qgd

Gate·Drain ("Miller") Charge

ALL

-

23

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

LS

Internal Source Inductance

ALL

-

12.5

-

nH

V GS = 10V, 10 = 12A, VOS = 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured between
the contact screw on
header that is closer to
source and gate pins
and center of die .
Measured from the
source pin, 6 mm

(0.25 in.1 from header
and source bonding

pad.

Modified MOSFET
symbol showing the
internal device
inductances.

.$

THERMAL RESISTANCE
RthJC

Junction·to·Case

RthCS

Case-to-Sink

Mounting surface flat, smooth, and greased.

RthJA

Junction·to·Ambient

Free Air Operation

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-365

PRINTED IN U S.A

•

UFN340 UFN341

UFN342

UFN343

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
IBody Diode)

Pulse Source Current
IBody Diode) ®

Diode Forward Voltage ®

UFN340
UFN341

-

-

10

A

UFN342
UFN343

-

-

a.o

A

UFN340
UFN341

-

-

40

A

UFN342
UFN343

-

-

32

A

UFN340
UFN341

-

-

2.0

V

Modified MOSFET symbol
showing the integral
reverse P.:N junction rectifier.

~

TC

= 25°C, IS = 10A, VGS = OV

V

TC

= 25°C, IS = a.OA, VGS = OV

ns

T J = 150°C, IF - 10A,dl F/dt - 100A/~s

UFN342
UFN343

-

-

1.9

ALL

-

BOO

-

5.7

-

~C

T J = 150°C, IF - 10A, dlF/dt

t"
QRR

Reverse Recovery Time
Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS

®Pulse Test: Pulse width" 300~s, Duty Cycle" 2%.

®

Fig. 1 - Typical Output Characteristics
25

,,

20

....~
~

5 15

z

TJ
11v

10

~
Q

TJ"'25 0 C

20

0

I 'tJ

,

r--8flpIPULSETEST

Vas > I~(on) ~ ROS(onl

VGS -6V

,I

ma~.

I

j

II
/; rrJ
~

5[

4~
20
40
60
80
VOS, ORA1N·TO·SOURCE VOLTAGE (VOLTS)

VGS, GATE·TO·SOURCE VOLTAGE (VOLTS)

Fig.4 - Maximum Safe Operating Area
100

OPERATION IN THIS

AREA IS LIMITED

I--JIJSPU!SETE~

50 -UFN340,1

-~F~342. 3
20

BV,

~~V_
5

.,

.... t!!-

~

w

....

2

BY RO Oil

,,-,

I'

~

4

6

z

Yr

~
~

u

z

GS ' 5IV-

B

,10 1m'

~

10

E

~-TC"250C
05
TJ.'50'CMAX

f=

r-

I-

t=-

1

10

10

:10~

I-

RthJC" 1 0 K!W

UFN341.3

i-ISINGL' PULSI'I

VOS, ORAIN·TO·SOURCE VOLTAGE (VOLTS)'

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. 1617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10,:Ls
100,us

t:: UFN342, 3

=

4~~

L

10

"...'"

~
.... ~ I--

;;"'6V-

'1

r-I U~N3k.11

~

P"

~"

5

h

.~:

0

0

10

4

'00

Fig. 3 - Typical Saturation Characteristics
5

'I

-..........

I
TJ'" U5 e ~
I

I

12

01/

'!ss.c
I

J

z

w

=
=
=>
u

Fig. 2 - Typical Transfer Characteristics

80 IJS PULSE TEST

V

+ LO'

Repetitive Rating: P~lse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

25

10'fL~v

J

= 100A/~s

'UFN340.'2

IIII
10

20

50

100

200

lCL
I
500

Vas. DRAIN·IO·SOURCE VOLTAGE (VOLTS)

4-366

PRINTED iN U.S.A.

UFN340

UFN341

UFN342

UFN343

Fig. 5 - Maximum Effective Transient Thermal Impedance. Junction·to·Case Vs. Pulse Duration

L

•

0=0.5

NOTES'

mIL

0.2

rO.l

~2~

1 ,==0.0'
0.02
SINGLE PULSE (TRANSIENT

r-~.01

1 DUTY FACTOR. 0 =

II

iHfiii! lMPj Oi NCE

:!

2 PER UNIT SASE" RthJC :;: 1.0 DEG C/W

3. TJM· Te = POM ZthJC(t)

1
10-4

10.1

10-2

10-3

10

1.0

.,. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 7 - Typical Source·Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current
15

I

-~"'PU~SET~~

vas> 'O(on} x ROS(on)

20

ma~.

I

~

TJ=-55 0 C

/
TJ = 25°C

/

,II

~

r\" 12J c

TJ" ISOOC

o

HV-

VI

2r-- TJ'2J

il

10

25

10
15
20
10. DRAIN CURRENT IAMPERES)

o

I
VSQ. SOURCE·IO·DRAIN VOLTAGE (VOLTS)

Fig. 9 - Normalized On-Resistance Vs. Temperature

Fig. 8 - Breakdown Voltage Vs. Temperature

2.5

1.25

I'

."",...
./

V

.....

..... ....

/

./

5

."",...

. /V

,,-V

0

V
."",...

V
VGS' 10V
10·5.5A -

-

5

0.15
-40

40
80
120
TJ. JUNCTION TEMPERATURE I'C)

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

o

-40

160

4-367

120
40
80
TJ,JUNCTION TEMPERATURE IOC)

160

PRINTED IN U.S.A

UFN340 UFN341

Fig. 10 - Typical Capacitance V,. Drain·to·Source Voltage
2000

Fig. 11 - Typical Gate Charge Vs. Gate·to-Source Voltage

ilL

till .. till + Cgd. Cds SHORTED.!
cra-egd
_VGS'ov

rCIllCgd
1600 ~ C,.=Cd,+CIII+Cgd

r--.... ~

20

"IMH,

I'.. "Cds + Cgd

\

~

I.

VCS'80J~
I
I

c'

r----- r- vos, = 200VI~

\

VCS=320V~

,"

\
400

~

1\

......

"- ""-

'"

~

r- ~C..

w

~

ro

~

~

'c-12A
TEST CIRCUIT

~

%

40

SEE FIGrE 18,

~

40
60
0g, TOTAL GATE CHARGE (nCI

c

~o.4

V

l/

80

Fig. 13 - Maximum Drain Current VI. Ca.. Temperatura

V

'/

VGS~10VJ

i"""'--r--,

--

~S=20V

1"-

-......

r--....

t"-...

6

~

r-....
UFN342~

UFN340. 341 _

.......

r--

....... 1'......

4

1'\'\

1-~

~

2

10

-

20

w

2

-

Fc~

V

r--

RaSlon) MEASURED WITH CURRENT PULSE Of
2.01'S DURATION. INITIAL TJ = 25°C. (HEATING
EFFECT OF 2.0 IJl'PULSE IS MINIMAl.)

./

~

1

~

Fig. 12 - Typical On·Resistance Vs. Drain Current

8

~~

1

Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS)

'-6

UFN342 UFN343

20

30

0

40

-'11

25

50

75
100
TC. CASE TEMPERATURE (DC)

'0, CRAIN CURRENT (AMPERES)

125

150

Fig. 14 - Power V,. Temperature Derating Curve
140
120 1 - -

1-0..

"

I'\.

0

0

0

"

~

" ",
~

0

"

~

"

~

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

40
60
80
100
TC. CASE TEMPERATURE (DC)

4-368

120

140

PRINTED IN U.S.A.

UFN340

Fig. 15 - Clamped Inductive Test Circuit

UFN341

UFN342

UFN343

•

Fig. 16 - Clamped Inductive Waveforms

VARY" TO OBTAIN
REQUIRED PEAK Il

VGS.R

OUT

-<>--............._ ......

' __
L

Fig. 17 - Switching Time Test Circuit
175V
ADJUST RL TO OBTAIN
SPECIFIED 10

33n

VOS

r;U~

--

I GENERATOR
I :J~CE
IMPEDANCE

-~-ilr-_ _O----'l....~
~

n

L ___

I

J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

O~·5mA

UNITROOE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

-..I\IV'v--"-'Vv\~-o -V OS
IG
10
CURRENT
CURRENT
SHUNT
SHUNT

4-369

PRINTED IN USA

UFN350
UFN351
UFN352
UFN353

POWER MOSFET TRANSISTORS
400 Volt, 0.3 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros•• and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

n.

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFN350
UFN351
UFN352
UFN353

400V
350V
400V
350V

0.30
0.30
0.40
0.40

15A
15A
13A
13A

MECHANICAL SPECIFICATIONS
UFN350 UFN351

UFN352 UFN353

TO-204AA (TO·3)

2Z221087S)

"'~TIx.AXO'A~~

SEATlHG
PlANE

T

~ ~ m'~il

DIA.-I
TWO PLACES

10.16 (0.40) MIN
TWO PLACES

afl~ :~B OIA
TWO PLACES

DRAIN
(CASE)

SOURCE

;~Mlg·:;t
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4-370

~UNITRODE

UFN350 UFN351

UFN352

UFN353

ABSOLUTE MAXIMUM RATINGS
UFN350

UFN351

UFN352

UFN353

Units

400

350

400

350

V

400

350

400

350

V

Continuous Drain Current

15

15

13

13

A

10@TC = 100°C Continuous Drain Current

9.0

9.0

B.O

B.O

A

60

60

52

52

Parameter

 IOlo!) x RD~IOn) ma~.

l -I -

I

I

TJ=+1250C

'rv:: F= F=

+-

TJ=250C
TJ = -55°C .....

l -I -

'fll
VII

.hv_ f-- f--

"V_ I -I 50

100

150

200

2'0

"'"

'j

./.V

300

Vas. DRAIN·TO·SOURCE VOLTAGE (VOL lS)

..

VGS, GATE·TO-SOURCE VOLTAGE (VOL TSI

Fig: 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
100
OPERATION N HI

I-UFN350, j

10

vGS'~V

h tv

alIJJPU}SETEJ-

5

II

I.

~

r

'. ,

.~

UFN352,3

10

10'J.

ioiJ~s
1m,

'"

...... 45V

:'>
~

I. '/

1/
J 1/
J

UFN352,3

20 I-JJaro1jl

~

A EA IS lIMI E_D '\~
BY ROS(on)

50

z

~
~
~

IOms

u

~

"""r

+

!?

01

•

UNITRODE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 86J.6540
TWX (710) 326-6509 • TELEX 95-1064

=

_TC=25 0 C

02

Vas. DRAIN·TO·SOURCE VOLTA.GE (VOLTS)

'"

10
05

TJ' 15DoC MAX
_ RthJC = 0 83 K/W

DC

UFN351,3
111111

-ISI~GliPIUWII

I

II

UF~~, 2

II I
10

lOOms

IIIIII
10

20

50

lOa

II
200

500

Vas, DRAIN TO SOURCE VOLTAGE (VOLTS)

4·372

PRINTED IN U.S A.

UFN350 UFN351

UFN352 UFN353

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to-Case Vs. Pulse Duration

~

II

•

0" O!i

NOTES

I---~ 2

3:fUL

01

~2~

~d05
f-- 002

....

0.01

"-

I DUTY FACTOR, 0 '"

SINGLE PULSE (TRANSIENT

THERMAl,'rpEO~NCIEI

I

I

IIIII

3 TJM·TC=POMZthJC(t)

10-3

10-4

:~

2 PER UNIT BASE" RthJC = 0 83 DEG. C}W

2

10-2

2

10-1

10

10

11, SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current
20

ffi

i

16

I

~

-

f-- TJ· i5 0C

-

;---

TJ=150 C==

TJ"25 cC
TJ

11

"

i~

i j / 'V

I

I

I

I

I

- Vas"> 10(on) x ROS(on)
[

I

--

+--

I

I

10
10

16

--

f - - '---

o
VSD. SOU RCE TO DRAIN VOLTAGE (VOL lS)

Fig. 9 - Normalized On-Resistance Vs. Temperature

Fig.8 - Breakdown Voltage Vs. Temperature

21

125

z

./

,...,

."

,...,

~

."

00

~~

/V

~~

0,,"
'<'~
00

/

~z
z- 10

~
]

085

~

0

1

06

~

;;;

075
-40

/1'

14

"'"

",

40

80

120

160

TJ,JUNCTlON TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

V

!

I

~

z_

V

I

18

~

....... I"

"

~

--

TJ" 25°C

.
max -

10. DRAIN CURRENT (AMPERES)

~

,

TJ=15~

Ii!

11

~

II

80"5PULSETESi--t-

If

0

f==

I'

!2.:!,;

[-+-

I

l~

+

i

//V

~

...a' o

TJ" -55!lC

I

r- ,
. . . V ........-r
~ V ,.-H-r

§

u

~

i I
I i

...

.;"

,./

L'
VGS

=

IOV

'O·55A ~ I--

'I

I

02
-40

40

80

120

TJ. JUNCTION TEMPE RATU RE (OC)

4-373

PRINTED IN U S.A

UFN350

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
4000

3200

,

2400

~

1=1 MHz

~
~

~

1800

",'

BOO

~

C,a

w

CISS

:l

,

\ I\,

v~s'8L ...

IS

V~S'2~V .....

'"
.........

1\

'"z
:!

eru

~

Cgs + Cgd. Cds SHORTEO
= Cgd

~
~

=

COSS=CdS+a
,.
gd

-

Vos' 320V

r--

10

..,6

i--

~

S

/

'O"8A
FOR TEST CIRCUIT-

V
30

20

40

1

SE FlGUIRE 18

50

18

VOS. ORAIN·TO·SOURCE VOLTAGE IVOLTS)

,

5

0.4

~
iO.2

~

16b-~--~--+---~-+--4---+-~--~~

/

z

o

:; o.3

20r--r--~-r--~-r--~-r--~~--'

VGS'20V_

0.6

%

140

Fig. 13 - Maximum Drain Current Vs. Case Temperature

/;
L'/
If'

~
~

112

vGs= lOV

2

~

84

,I

o.7

~

56

-

1

Og. TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On·Resistance Vs. Drain Current
0.8

~,.

~

>-

'"'"

""'Cds+Cgd

::::~'f'

~~

0

f--

"'r-... ~.
~'"
10

UFN353

20

'-,,-

~

UFN352

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

VG~'O
1

~

UFN351

-

V

10

V
ROS(on) MEASURED WITH CURRENT PULSE OF
2.0/JsDURATlON. INITIAL TJ=25 0 C (HEATING
EFFECT OF 2.0 II-S PULSE IS MINIMAL)

10

40

30

50

60

OL-~

70

__~~~__~~__~~__~~

25

50

75
100
Te. CASE TEMPERATURE (OC)

10. DRAIN CURRENT (AMPERES)

125

150

Fig. 14 - Power Vs. Temperature Derating Curve
140

'\..
I

120

":\...
'\

S
"

100

'\..

'\

z

0

~

80

"

60

,\1

~
~

~

!':\...

~ 40
20

"

"\

20

40

60

80

100

Te. CASE TEMPERATURE (OC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

4-374

120

140

PRINTED IN USA

UFN350

Fig. 15 - Clamped Inductive Test Circuit

UFN351

UFN352

UFN353

Fig. 16 - Clamped Inductive Waveforms

II

VARY tp TO OBTAIN
REa.UIRED PEAK Il

VGS·R

'L_--(>---<~w.-J

Fig. 17 - Switching Time Test Circuit
E,

Vos

- - -~-ilr-_-6----'t,..I-::f
Ir;u~
GENERATOR
...,.
~g~"CE Jl
I IMPEDANCE
I
L ___ J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

12V
BATTERY

-

O~1.5mA

IG
CURRENT
SHUNT

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-375

10
CURRENT
SHUNT

PRINTED IN U.S A

UFN420
UFN421
UFN422
UFN423

POWER MOSFET TRANSISTORS
500 Volt, 3.0 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon. and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

UFN420

500V

3.0n

2.5A

UFN421

450V

3.0n

2.5A

UFN422

500V

4.0n

2.0A

UFN423

450V

4.0n

2.0A

MECHANICAL SPECIFICATIONS
UFN420 UFN421 UFN422 UFN423

TO-204AA (TO-3)

2222(0815)
342

MAX OIA

l1~(O~~1

"13J:1=ffSEATING
T~
PLANE

6;'1~:::IDIA-I1-

TWO PLACES

10 16 (040)MIN

TWO PLACES

a:lsnHO'A

TWO PLACES

DRAIN

(CASEI

lH~mtl~t
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and (Inches)

4/83

4-376

~UNITRDDE

UFN420 UFN421

UFN422 UFN423

ABSOLUTE MAXIMUM RATINGS
UFN420

UFN421

UFN422

UFN423

VOS

Orain - Source Voltage (j)

500

450

500

450

V

VOGR
10@TC= 25°C

Orain - Gate Voltage IRGS = 1 M(lI (j)

500

450

500

450

V

Continuous Drain Current

2.5

2.5

2.0

2.0

A

10@TC = 100°C

Continuous Drain Current

1.5

1.5

1.0

1.0

A

10M

Pulsed Orain Current @

10

10

8.0

8.0

VGS
PO@TC-25°C

Gate - Source Voltage

Parameter

Max. Power Dissipation

I

10

40

ISee Fig. 14)

W

0.32

ISee Fig. 141

W/K

ISee Fig. 15 and lSI L - 100"H
10
I
B.O

Inductive Current, Clamped

Operating Junction and
Storage Temperature Range

TJ
T stg

A
V

±20

Linear Derating Factor

ILM

Units

Lead Temperature

I

A

8.0

-55to 150

°C

300 10.OS3 in. 11.Smml from case for 10s1

°C

ELECTRICAL CHARACTERISTICS @ Te = 25°C (Unless otherwise specified)
Typ.

Max.

Units

-

-

V

-

-

V

10 = 250"A

4.0

V

VOS

100

nA

VGS - 20V

Parameter

Type

Drain - Source Breakdown Voltage

UFN420
UFN422

500

UFN421
UFN423

450

VGSlth) Gate Threshold Voltage
Gate-Source Leakage Forward
IGSS

ALL

2.0

ALL

IGSS

Gate-Source Leakage Reverse

ALL

-

lOSS

Zero Gate Voltage Drain Current

-

-

BVOSS

1010n)

AOSlon) Static Drain-Source On-State
Resistance

®

nA

VGS = -20V

"A

VOS - Max. Rating, VGS - OV

-

-

1000

"A

VOS

UFN420
UFN421

2.5

-

-

A

UFN422
UFN423

2.0

-

-

A

UFN420
UFN421

-

2.5

3.0

Il

UFN422
UFN423

-

3.0

4.0

[J

VGS

ALL

1.0

1.75

-

S tUl

Input Capacitance

ALL

-

300

400

pF

Coss

Output Capacitance

ALL

75

150

pF

C rss

Reverse Transfer Capacitance

ALL

20

40

pF

tdlon)

Turn-On Delay TIme

ALL

-

30

SO

ns

tr

Rise Time

ALL

-

25

50

ns

tdlolt)

Turn-Off Delay Time

ALL

SO

ns

Fall Time

ALL

-

30

tf

15

30

ns

Og

Total Gate Charge

ALL

-

11

15

nC

Ogs

Gate-Source Charge

ALL

-

5.0

-

nC

Ogd

Gate-Drain t"Miller"l Charge

ALL

-

S.O

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

ALL

= Max. Rating x 0.8, VGS

= OV, TC

= 125°C

VOS >1010n) x ROSlon) max.' VGS = 10V

Forward Transconductance @

Internal Source Inductance

= VGS, 10 = 250"A

250

Ciss

LS

VGS = OV

-100

9fs

(Gate-Source Plus Gate-Drain)

Test Conditions

-

ALL
On-State Drain Current @

Min.

-

12.5

-

nH

= 10V, 10 = 1.0A

VOS ) 10ton) x ROSton) max.' 10 - I.UA
VGS

= OV, VOS = 25V, f

= 1.0 MHz

See Fig. 10
V OO = 0.5 BV OSS ' 10
See Fig. 17

= 1.0A, Zo

= SOil

(MOSFET switching times are essentially
independent of operating temperature.)

V GS = 10V, 10

= 3.0A, VOS -

0.8 Max. Rating.

See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured between
the contact screw on
header that is closer to
source and gate pins
and center of die.
Measured from the
source pin, 6 mm

to.25 in.) from header
and source bonding

pad.

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

Junctlon-to-Case

RthCS

Case-to-Sink

Mounting surface flat, smooth, and greased.

RthJA

Junctlon-te-Ambient

Free Air Operation

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. 1617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-377

PRINTED IN U.S A

•

UFN420 UFN421

UFN422 UFN423

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current

IS

(Body Diode I

Pulse Source Current

ISM

(Body Diodel @

VSD

Diode Forward Voltage @

Modified MOSFET symbol

UFN420
UFN421

-

-

2.5

A

UFN422
UFN423

-

-

2.0

A

UFN420
UFN421

-

-

10

A

UFN422
UFN423

-

-

8.0

A

UFN420
UFN421

-

-

1.4

V

TC

= 25·C, IS = 2.5A, VGS = OV
= 25°C, IS = 2.0A, VGS = OV

showing the integral
reverse P~N jl..llction rectifier.

~

UFN422
UFN423

-

-

1.3

V

TC

All

-

600

-

ns

T J - 150·C, IF = 2.5A, dlFldt = 100A/!,s

3.5

-

~C

T J - 150·C.I F = 2.SA, dlF/dt = 100A/!'.

trr

Reverse Recovery Time

ORR

Reverse Recovered Charge

All

-

ton

Forward Turn~on Time

All

Intnnsic turn~on time is negligible. Turn-on speed is substantially controlled by lS



6.!V

5

-

v

r-TJ= 125°C

I

I

TJ""250C~

TJ'.55.C"

'sr

k::::: ~

4.0V

100

150

10

250

200

VGS. GATE·TO·SOURCE VOLTAGE (VOLTS)

Vas. DRAIN-IO-SOURCE VOLTAGE (VOLTS)

Fig, 3

~

Typical Saturation Characteristics

P70V.J.

-Sll.llpuLETEJ

~'r"""

i

6.5V~

"""'"

6.OV-

.JV=
l

J

If
I
12

-

AREA IS LIMITED
BY ROSlon)

r

UFN420,1
3

['ill

I-UFN420.1

l'"

r-tr~~
0

Lru

~

lms
r, ltL.

I- TC·25·C

VGS'5.L=

'=-

4~V_

,..-

T I

2

r- TJ= 1500C MAX.

I- RthJC'312K/W

1

40V====
16
20

005
10

Vas. DRAIN-TO·SOURCE VOLTAGE (VOL TS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (7101 326·6509 • TELEX 95·1064

OPERATION IN THIS

II I

20

I-~FIl422.

V

1

Fig. 4 - Maximum Safe Operating Area
50

10

1/

V

i'J
l;

4.5V

50

r---.....~

SINGLE PULSE

UFN421, ~~
UFN420. ~;
10

20

50

100

200

i

DC

500

Vas DRAIN·TO·SOURCE Vall AGE (VOLTS)

4·378

PRINTED IN U.S.A.

UFN420 UFN421

UFN423

Fig. 5 - Maximum Effective Transient Thermal Impedance. Junction·to·Case Vs. Pulse Duration

..
z

I

~

L
I-!::

UFN422

I

1.0

",z

>=>

>= '"

~~

0'0.5

05

.

ffi~ 0.2

N"
::;~

r-O.l

~

i~ 0.1 ",,0.05

,,'"
2..! 0.05 -0.02
"w
2=
,£'..

-

;;;0.01

""

0.02

N

0.01
10-5

1

•

NOTES.
r-6.2

mJL

-

iii!

~2~

~~

1 DUTY FACTOR, 0 =

SINGLE PULSE (TRANSIENT
THERMAL1MPEOANCEI

2 PER UNIT BASE = RthJC '" 3.12 OEG. elW.
3 TJM· Te '" POM ZthJC1t)

10-4

10-1

1.0

10

'I.SQUARE WAVE PULSE DURATION (SECONOSI

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current

80 ~I PULSE TEST.

, , , 1
Vas> 10(on) x ROS(on)

-

I

102

max.

Tj'~

h
/(/

V
VV

~ !--

"..

"

.......
.......

'"~

.''""

t_

~ ,.... T;'250
~

n
Tj! 125 0

z

Tj'250C,

'"'"=>

t

"z

~w

10 f- TJ '" 1S0oC

~

III
I

~
~

,

/I

,

1.0

o

2.6

w

1.15

"..

i

~

~ Ci 1.05
ww

".~

,"N

"':;

"''''
~I

~~

0.95

~

...

"z

jov
- - V~S'
'0= 2.5A

~

II

2.2

'"to

~

"

J

18

/

/'

V

. /V

/'

V-

....,.V

~
Q

I

Fig. 9 - Normalized On-Resistance Vs. Temperature

1.25

C)

= 25 0 C,

VSD. SOURCHO·ORAIN VOLTAGE IVOL TSI

Fig. 8 - Breakdown Voltage Vs. Temperature

~

r---.TJ

I

'0. DRAIN CURRENT (AMPERES)

:>

"'-Tj"50 0C =

V

0.85

/"

i;

0.1 5

80

-40

120

160

TJ. JUNCTION TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

0.2
-40

40

80

120

160

TJ, JUNCTION TEMPERATURE (DC)

4-379

PRINTED IN U S.A.

UFN420 UFN421

Fig. 10 - Typical Capacitance VI. Drain·to·Source Voltage
1000

VGSI.o

I

...

I

I

11·'.MHz
COo •
+ C.... Cd. SHORTED Cra -C...

c..

+ ...
~
-Cdl+C,:I

600

w

u

z

-

§

400

u

1\\ ~

\

200

\

.......

- f--

w

~ 10

~

:;:

'"!II
>

/

C"'- ....

10
40
20
30
VDS. DRAIN·TD.sOURCE VDLTAGE IVOLTS)

,.
,.
tJ

~

"

Ijj

C,.

'-.....
'-.....

I~

">

I

1"- to-

I

Vos '" 400V

'"'"
:;

Ciss

t--....

I

w

I

,\

I
I
VDS' 250V

"~ 15

I

i:!

VOS'" l00V

~

- f--

COlI- Cdl+

~

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage
20

I

800

UFN422 UFN423

/

'D=3A
FOR TEST CIRCUIT
Si E FIGtRE

'i

8

50

12

a". TOTAL GATE CHARGE '"C)

Fig. 12 - Typical On·Resistance Vs. Drain Current

16

r-20

Fig. 13 - Maximum Drain Current VI. Case Temperature
3.0

. 1
VGS ·10V

t

/

...... V
2

L

V

/

2.4

r--... t-....

S'20V

V

at"- ~
t--

I......... I'.
i""""'-

t-UFN422.~ ......

"' "

.......

2

V

~20.421

~"I'I.

O.6

~

;,g~~u~~~~~:E~N~~::LC~~R2E5~tP~':-:!~~G
EFFECT DF 2.0 •• PULSE IS MINIMAL.)
14

12

10

0
25

50

'D. DRAIN CURRENT (AMPERES)

75
100
TC. CASE TEMPERATURE I'C)

125

,

~

150

Fig. 14 - Power Vs. Temperature Derating Curve
0

'\

5

~
f'\

5

'\
1'\

0

\

5

'\

0
5

~
\

20

UN)TROOE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

40
60
80
100
TC. CASE TEMPERATURE I'CI

4·380

120

140

PRINTED IN U.S A

UFN420 UFN421

Fig. 15 - Clamped Inductive Test Circuit

UFN422

UFN423

II

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBTAIN
REQUIRED PEAK 'L

TO
VGS=:r--tP-L

OUT

Fig. 17 - Switching Time Test Circuit

v,

PULSE
GENERATOR

O.U.T.

r-----...,
I
I
I

L _

50n

I
I

___ ...J

TO SCOPE
O.Oln
HIGH FREQUENCY
SHUNT

50n

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

o~15mA

-J\J'V'v-....-'\II/\r---o -VOS

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-381

IG

10

CURRENT
SHUNT

CURRENT
SHUNT

PRINTED IN U.S A

UFN430
UFN431
UFN432
UFN433

POWER MOSFET TRANSISTORS
500 Volt, 1.5 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RosI.nl and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

RDS(on)

ID

UFN430
UFN431
UFN432
UFN433

500V
450V
500V
450V

1.50
1.50
2.00
2.00

4.5A
4.5A
4.0A
4.0A

MECHANICAL SPECIFICATIONS
UFN430 UFN431 UFN432 UFN433

TO-204AA (TO-3)

22.22 (081S)
3.42

MA)( OtA

'H~I~;~I

10131:~'
~.

SEATING

T

PLANE

~DIA'-1~
TWO PLACES

10 16 (040) MIN

TWO PLACES

;:Jlt:;11 OIA
TWO PLACES

DRAIN

(CASEI
SOURCE

1~~~I8.:;t
t

MEASURED AT SEATING PlA'NE

Dimensions in Millimeters and (Inches)

4/83

4-382

~UNITRODE

UFN430

UFN431

UFN432

UFN433

ABSOLUTE MAXIMUM RATINGS
UFN430

UFN431

UFN432

UFN433

Units

500

450

500

450

V

Drain - Gate Voltage IRGS ~ 1 M!l) (j)

500

450

500

450

V

Continuous Drain Current

4.5

4.5

4.0

4.0

A

3.0

3.0

2.5

2.5

A

18

18

16

16

Parameter

VOS

Drain ~ Source Voltage

VOGA
10 @ TC ~ 25°C

CD

10 @TC - 100°C

Continuous Drain Current

10M

Pulsed Drain Current

VGS
PO@ TC ~ 25°C

Gate - Source Voltage

®

75

Max. Power Dissipation

0.6

Linear Derating Factor
Inductive Current. Clamped

ILM

I

18

Lead Temperature

ELECTRICAL CHARACTERISTICS @ TC

~

ISee Fig. 141

W

ISee Fig. 141
~

W/K

1OO~H
16

I

A

16

-55to 150

°C

30010.063 In. 11 .6mml from case for 10s1

°C

25°C (Unless otherwise specified)
Min.

Typ.

Max.

Units

UFN430
UFN432

500

-

-

V

VGS ~ OV

UFN431
UFN433

450

-

-

V

10

VOS - VGS, 10 - 250~A

Type

Parameter

BVOSS

V

ISee Fig. 1 5 and 161 L
I
18

Operating Junction and
Storage Temperature Range

TJ
T stg

A

±20

Drain - Source Breakdown Voltage

Test Conditions

~ 250~A

ALL

2.0

-

4.0

V

IGSS

Gate-Source leakage Forward

ALL

-

-

100

nA

VGS ~ 20V

IGSS

Gate-Source leakage Reverse

ALL

-

-

-100

nA

VGS - -20V

loSS

Zero Gate Voltage Drain Current

-

250

~A

VOS ~ Max. Rating, VGS ~ OV

-

-

1000

~A

VOS - Max. Rating xO.8, VGS - OV, TC - 125°C

UFN430
UFN431

4.5

-

-

A

UFN432
UFN433

4.0

-

-

A

UFN430
UFN431

-

1.3

1.5

II

UFN432
UFN433

-

1.5

2.0

II

V GStll]L Gate Threshold Voltage

1010ni

On-State Drain Current

@

ROS(on) Static Drain-Source On-State
Resistance ®

®

ALL

VOS ) 1010ni x ROS(onl max.' V GS ~ 10V

VGS

~

10V, 10

~

2.SA

9fs

Forward Transconductance

ALL

2.5

3.2

-

S IlJI

Ciss

Input Capacitance

ALL

-

600

800

pF

Coss

Output Capacitance

ALL

-

100

200

pF

C rss

Reverse Transfer Capacitance

ALL

-

30

60

pF

tdlonl

Turn-On Delay Time

ALL

-

-

30

ns

VOO ~ 225V, 10

tr

Rise Time

ALL

ns

See Fig. 17

Turn-Off Delay Time

ALL

-

30

tdloffl
tf

-

55

ns

Fall Time

ALL

-

-

30

ns

(MOSFET switching times are essentially
independent of operating temperature.)

Qg

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

22

30

nC

Qgs

Gate-Source Charge

ALL

-

11

-

nC

Qgd

Gate-Drain ("Miller") Charge

ALL

-

11

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

LS

Internal Source Inductance

ALL

-

12.5

-

nH

VOS ) 10(onl x ROSlonl max.' 10 - 2.5A
VGS ~ OV, VOS ~ 25V, f ~ 1.0 MHz
See Fig. 10

= 2.5A, Zo

~

1511

V GS ~ 10V, 10 ~ 6.0A.-V OS ~ 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured between
the contact screw on
header that is closer to
source and gate pins
and center of die .
Measured from the
source pin. 6 mm

10.25 in.1 from header
and source bonding

pad.

Modified MOSFET
symbol showing the
internal aevice
inductances.

.@)

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthCS

Case-to-Sink

Mounting surface flat. smooth. and greased.

RthJA

Junction-to-Ambient

Free Air Operation

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (6171 861-6540
TWX (7101 326·6509 • TELEX 95-1064

4-383

PRINTED IN U S.A

•

UFN430

UFN431

UFN432

UFN433

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

UFN430
UFN431

-

-

4.5

A

UFN432
UFN433

-

-

4.0

A

UFN430
UFN431

-

-

18

A

UFN432
UFN433

-

-

16

A

UFN430
UFN431

-

-

1.4

V

TC = 25·C.IS = 4.5A. VGS = OV

UFN432
UFN433

-

-

1.3

V

T C = 25·C. IS = 4.0A. VGS = OV

800

-

ns

TJ = 150·C.I F - 4.5A. dlF/dt = 100A/"s
T J = 150·C. IF - 4.5A. dlF/dt - 100A/"s

Continuous Source Current
IBody Diode!

Pulse Source Current
IBody Diode! @

Diode Forward Voltage @

Modified MOSFET symbol

showing the integral
reverse P-N junction rectifier.

~

trr

Reverse Recovery Time

ALL

QRR

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS

 'Olon) x ROSlon)

max.

vGs'sov- l -I -

"jV-

F F

-

r- TJ '" ~1250C

-

)--TJ"SS.C,

TJ ~ 25 DC.......

~

~"""""'1

'IV=
100

/

FF

200

~
300

1

Vas. DRAIN·TO·SOURCE VOLTAGE (VOLTSI

Fig. 3 - Typical Saturation Characteristics

f,
"J.

I

2
4
5
6
VGS. GATE TO·SOURCE VOlTAGE (VOlTS)

Fig. 4 - Maximum Safe Operating Area
100

,

OPERATION IN THIS
AREA IS L1MITEO
BY ROSlon)

so

S

f-

')jjS PUJE TESJ

~

L, ~

3

)

#

~:r
S.SV_
f-

-

UFN430.1

20

S.ov=~

~

iti
..a

UFN432.3

0

S ~UFN430.1

It-I''''

Vos~4.SV= ~

L

I

1."1

I ...

~TC·25·C
O.
5 ~~J"SO.CMAX.

10ms

FN431.3
UFN430.2

O. 2 H'NGLE PP\SFI

""""

O. I

1.0

10
Vas. DRAIN·TO·SOURCE VOLT~GE (VOLTS}

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

i;ut,

r- R,hJC • 1.67 KIW

•.oy"""

II"

~ 1.0

'".E>

10",

! 1 1,(

r- UFN432. 3

~

z

2

-

/

I I IIII
10

20

50

""100

lOOms

I==~

200

~~ttl
500

VOS' ORAIN·TO·SOURCE VOLTAGE (VOLTS)

4·384

PRINTED IN U.S A.

UFN430

UFN431

UFN432 UFN433

Fig.5 - Maximum Effective Transient Thermal Impedance. Junction·to·Case Vs. Pulse Duration

H-

•

D: 0.5
NOTES

3:flIL

1-02
0.1

~2~

O.OS

r002-=:

I - 0.0!.:,.

, DUTY FACTOR. 0 -

SINGLE PULSE (TRANSIENT

mlAMAt '~PEOtNrE:

II

3 TJM - ie

JlJ
10-3

10-4

:~

2 PER UNIT BASE'" R1hJC" 1 67 DEG C/W

'" POM ZthJC(t)

10-2

10

1.0

11. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current
TJ =- 550

,/

/

c....- ~ ~

..,-./f
TJ=~

./

J ,/
V / ./ /"

Fig. 7 - Typical Source-Drain Diode Forward Voltage

~:;:I~ I--

~
"
"

-

,

TJ =25 0 C

~

z

./

'"

I'-TJ'" ISOoC

~

/I

z

~

1£ L
I. V

IVI

102

10

w

..,

TJ-15D OC

>

~

Vas> loton) x ROSton) max

I

80llsPUlSfHST

10

I I

TJ = f5 0 C

o

10. DRAIN CURRENT (AMPERES)

VSQ. SOURCE·TO·DRAIN VOLlAGE (VOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature

"

12S

/

w

'"
~

115

>
z

~

'"Ww
~a

"'

r""'"

l05

~~

~~

z

'"
in

..., .., ~

~
z
::ffi
~!::!

/"
..".

....

:~

ez

0.95

:,;'

18

~

/

~"

~~
~

j

0.B5

40
BO
120
TJ. JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

/

10

/
06

~

0.15
-40

/

14

5:;!

. / V"

:

'"~

/

u

,/

/

VGS = IOV

'"1",.51-

f--

02

160

-40

40

BO

120

TJ, JUNCTION TEMPERATURE lOCI

4-385

PRINTED IN U.S A

UFN430

Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage
2000

J

ri

COlI
1200

~

800

..;

=Cd,+ ~
+Cgd

I\.

-

Vas= IODV
I

-

Vas -'oov

Vas'" 250V

-=Cds+Cgd

z

...«

Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage

J

C'" - Cgd

-'"

~

C,"

\
5

\

~V
V

j

..... ~

~

r-

~
-.... I'-..

VGS" 10V

... 1'

V

V
V

V

40

5

j

V

32

Fig. 13 - Maximum Drain Current Vs. Case Temperature

2.0~s DURATION. INITIAL TJ- 25 0 C. (HEATING

EFFECT OF 2.0., PULSE IS MINIMAU

1

24

Og. TOTAL GATE CHARGE tnC)

RDSlon) MEASURED WITH CURRENT PULSE OF

2

't i

SE, FIG
16

50

Fig. 12 - Typical On-Resistance Vs. Drain Current

3

'0-6A
FOR TEST CIRCUIT- r -

V

r-.

10
20
30
40
VOS. ORAIN·TO·SOURCE VOLTAGE IVOL TS)

5

f"', ~V

h'V

\
400

UFN433

li 1MH
C. . . Cp+Cgd.C.,SHORTEO -

1600

u

UFN432

20

1
GS ' 0

I

UFN431

VGS' 20V

t--

r-

.....

r--....

UFN430,431

r-UF::~ ...... ~~
........ r-...

"

~

.... ~

"

o

1
10
15
'0, DRAIN CURRENT IAMPERES)

20

25

25

50

75
100
Te. CASE TEMPERATURE IOC)

,

~

I

125

150

Fig. 14 - Power Vs. Temperature Derating Curve
0

I-0

I\.

0

"I\.

""'\

0
0

0

L\

0

~

0

20

40

60

80

100

Te. CASE TEMPERATURE IOC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-386

'" "

120

140

PRINTED IN U.S.A

UFN430 UFN431

Fig. 15 - Clamped Inductive Test Circuit

UFN432 UFN433

II

Fig. 16 - Clamped Inductive Waveforms

VARY Ip TO OBTAIN

REQUIRED PEAK Il

VGS·R

'l_--<)--~~"M""""

Fig. 17 - Switching Time Test Circuit

v,

-~--PTO SCOPE

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

oI=n·5mA

'.

CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·387

10
CURRENT
SHUNT

PRINTED IN U.S.A.

UFN440
UFN441
UFN442
UFN443

POWER MOSFET TRANSISTORS
500 Volt, 0.85 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROSlonl and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No'Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFN440

500V

0.850

8.0A

UFN441

450V

0.850

8.0A

UFN442

500V

1.100

7.0A

UFN443

450V

1.100

7.0A

MECHANICAL SPECIFICATIONS
UFN440 UFN441

UFN442 UFN443

TO·204AA (TO·3)

222210815)

100i±~X.AX
DIA~~
SEATING

T

PLANE

J~I~3HIDIA-I

10.16/0.40) MIN
TWO PLACES

TWO PLACES

2661
(1 050) MAX

UlIsml

DIA
TWO PLACES

DRAIN

(CASEI
SOURCE

',17\04401t

!rnlml!l

t MEASURED AT SEATING PLANE

Oimensions in Millimeters and (Inches)

4/83

4-388

~UNITRODE

UFN440 UFN441

UFN442 UFN443

ABSOLUTE MAXIMUM RATINGS
UFN440

UFN441

UFN442

UFN443

Units

500

450

500

450

V

500

450

500

450

V

Continuous Drain Current

8.0

8.0

7.0

7.0

A

10@TC = 100·C

Continuous Drain Current

5.0

5.0

4.0

4.0

A

10M

Pulsed Drain Current @

32

32

28

28

VGS
PO@TC=25·C

Gate· Source Voltage

Parameter

 IOlon) x ROSlon) ma~.

16

I /

/V

VGs.J

J'

'J

2

II
I

r

I

/J
A

y

1

[
Ii. V

4~

~

20
40
60
80
VDS. DRAIN·TD·SOURCE VOLTAGE IVOlTSI

VTJ'-55'C
I
VTJ:25'C
TJ" 1250 C

i- I--

W

10

4

100

VGS. GATE·TO-SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
100

10
...0IIII

10V
9V

8OjJ..!PULS)TEST'

~

8v

".

50

.",
20

7Vy

~~

~6V

/

~ V'.

I

4~
2
4
6
8
VDS. DRAIN-TO-SOURCE VOLTAGE (VOlTSI

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

O~ t'

TC'25'C
TJ' 150'C MAX.
- RthJC • 1.0 K/W
0.2 _ISINGlE PULSE

1117'

UFN441.3

~DC

...LI IJ III.

I~~'~

~

0.5

Om

=
-

o1
1.0

10

10~s

11~.

~ 1.0

11':

~

,

Q

E

"

,

z

~

".

~U~~.\

!

VGS'5V

,

_~F~44n

-UFN442.3

:;;

~

I

10

'"

OPERATION IN THIS
AREA IS LIMITED
BY ROS(on)

-UFN440.1

10

20

50

100

200

I

III

500

VDS. DRAIN-TO-SOURCEVOlTAGE (VOlTSI

4-390

PRINTED IN U.S A.

UFN440 UFN441

UFN442 UFN443

Fig. 5 - Maximum Effective Transient Thermal Impedance. Junction·to·Case Vs. Pulse Duration

ffi

2

iii

:L

1.0
""!::
wz
>=>

~!

O.5

",20
w< 0.2

~~
<",

1IIIIIIillIl~l~ •
0-0.5
0.2

f--O.I

O. I 1::=0.05
0.02
:O:~
0.05
Uw

~~

~2~

....

~2'
1\
=-""
I
I
lH~=++~++=++~+:14+=++ 2. PER UNIT BASE RtnJC
% 0.02 t-t-:++:++t+=+++t==t:+=1=t~L~J~J~lI+==.l~~+=
llllil
I
J
3.TJM·TC,POMZ,hJCI')
"'<

~

I-?Ol

2%

SINGLE PULSE ITRANSIENT
~Hf~·MT~ IMPFOAINCEll

I DUTY FACTOR. O'
z

~

0.0 I
10-5

10-3

2

5

10-2

10-1

Z

1.0 DEG. C/W.

10

1.0

'I. SQUARE WAVE PULSE DURATION ISECONOS)

Fig. 6 - Typical Transconductance Vs. Drain Current
16.0

~~I'IPutSETElT

20

~DS > io(onl ~ RDS(~n) mat.

~ 12.B
~
§
~ 9.6

~

l

j

"

/~

6.4

3.2

/
TJ :s-55 Q C

~

il1
~
~

,

Fig. 7 - Typical Source-Drain Diode Forward Voltage

r

TJ= lS00 C

TJ =25 0 C

!=

rL'12slc

r

TJ :25 0 C

0.2

8
12
16
10. DRAIN CURRENT (AMPERES)

O. I

20

VSQ. SOURCE·TO·DRAIN VOLrAGE (VOL TSI

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature

1.25

2.5
~

w

~

/

1.15

>

,,/

./

.,/'r'

..,,"/
".

.,/

./

.,/

,,/

'"

V

L
vGs" JIIV

........
o

0.75
-40

40

80

120

160

-40

40

80

120

-

160

TJ, JUNCTION TEMPERATURE (OC)

TJ,JUNCTION TEMPERATURE (OC)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) B61·6540
TWX (710) 326·6509 • TELEX 95·1064

10-4.5A -

4·391

PRINTED IN U.S.A

UFN440 UFN441 UFN442 UFN443

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
2000

1600

:- 1200

~

~_.

BOO

'00

C;a • c.. +C.,.c.,SHORTEO
_c... c.,

i'\.

a

J J

20

_VGS'OV
'''lMHz

COlI"' Cd,+ ..... gel

~

-C.,+C"'.

I

....... r--..

~

C. g

\

~

u

"',
1"'- r-...

~

~

:;

~

~

~

W

%

•

VOS, DRAIN TO·SOURCE VOLTAGE IVOLTS)

Fig. 12 - Typical On·Resistance Vs. Drain Current
3.5

~

e

3.0

EFFECT OF 2.0,us PULSE IS MINIMAL J

~

~

z

'"

I

2,5

VGS'" IOV

~

2.0

.
~

~

60

40

20

BO

Qg. TOTAL GATE CHARGE (nCl

Fig. 13 - Maximum Drain Current Vs. Case Temperature

r:-

B

~

6

/

U

1.0

-

SEE FIGURE lB

.......

r---...

-- r-...

t...... ~ ""

--

V'VGs o 20V

~

'"..,'"
'"z
~

FOR TEST CIRCUIT

0

MEASU~EO WIT~ CURRE~T

RgSI';)
PULSE10F
2. •' DURATION. INITIAL TJ' 25'C. IHEATING_

u

z

W
'O"10A

"

C",

~

~

I

>

C,.

~

~

I

"~

r-

ffi

10

~

!\.

d

0

~
>

"'"

........

VOS"00V",:v os 2~OV "'vos' .ocv",-

"

\
\

\

15

~

~

4

..... V

UFN440, 441

~

UFN~4~ ~

2

0.5

10

15

20

25

30

0
25

35

",,

CS ~

50

75

100

125

150

Te. CASE TEMPERATURE (OCI

'0. DRAIN CURRENT IAMPERESI

Fig. 14 - Power Vs. Temperature Derating Curve

,.

0

12O~

""'"

0
0

~

'" ,
"
~

0

"\

I\.

'"

0

20

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

BO
100
40
so
TC, CASE TEMPERATURE I'C)

4·392

~

120

"

~

,.

PRINTED IN U.S.A.

UFN440 UFN441

Fig. 15 - Clamped Inductive Test Circuit

UFN442 UFN443

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBT/dN
REQUIRED PEAK 'L

VGS-R

_D~UT~~c::JI'
IL+_---<)----4........._-J

Fig. 17 - Switching Time Test Circuit
200V
ADJUST RL TO OBTAIN
SPECIFIED 10

45(1

VDS

r;;U~ - - -O_lr---o--......lI..t=:l'
I GENERATOR
I :~.?RCE
Jl I
IMPEDANCE
L ___ J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

O~5mA

IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-393

10
CURRENT
SHUNT

PRINTED IN U.S.A.

UFN450
UFN451
UFN452
UFN453

POWER MOSFET TRANSISTORS
500 Volt, 0.4 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslo". and a high transconductance.

Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFN450
UFN451
UFN452
UFN453

500V
450V
500V
450V

0.40
0.40
0.50
0.50

13A
13A
12A
12A

MECHANICAL SPECIFICATIONS
UFN450 UFN451 UFN452 UFN453

TO-204AA (TO-3)

2222108151

1013:t~.AX
D'A~~
SEATING

T
J'r, I~':::I

PLANE

OIA
TWO PLACES

-I

10.1610.401 MIN.
TWO PLACES

;=I~ml

OIA
TWO PLACES

DRAIN
(CASEI

fAUI~':~mf
t MEASURED AT SEATING PLANE

Dimensions in Millimeter. and (Inches)

4/83

4-394

~UNITRDDE

UFN450 UFN451

UFN452 UFN453

ABSOLUTE MAXIMUM RATINGS
Parameter

UFN450

UFN451

UFN452

UFN453

Units

500

450

500

450

V

500

450

500

450

V

13

13

12

12

A

8.0

8.0

7.0

7.0

A

52

52

48

48

Drain - Source Voltage (j)

VOS

Drain - Gate Voltage IRGS - 1 Mill (j)
VOGR
Continuous Drain Current
10@TC= 25 DC
10@TC = 100 DC Continuous Drain Current

@

10M

Pulsed Drain Current

VGS
PO@TC=25 DC

Gate - Source Voltage
Max. Power Dissipation

150

Linear Derating Factor

1.2

Inductive Current, Clamped

ILM

I

52

Lead Temperature

W

ISee Fig. 141

W/K

ISee Fig. 141

ISee Fig. 14 and 151 L - 100~H
52
I
48

Operating Junction and
Storage Temperature Range

TJ
T stg

A
V

±20

A

48

I

-55to 150

DC

300 10.063In.ll.6mml from case for 10s1

DC

ELECTRICAL CHARACTERISTICS @ TC = 2SD C (Unless otherwise specified)
Min.

Typ.

Max.

Units

UFN450
UFN452

500

-

-

V

UFN451
UFN453

450

-

-

V

10 = 250~A

ALL

2.0

4.0

V

VOS = VGS, 10 = 250~A

Type

Parameter

BVOSS

Drain - Source Breakdown Voltage

IGSS

Gate-Source leakage Forward

ALL

-

IGSS

Gate-Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

-

-

-

-

UFN450
UFN451

13

-

-

A

UFN452
UFN453

12

-

-

A

UFN450
UFN451

-

0.3

0.4

n

UFN452
UFN453

-

0.4

0.5

!l

V GSlthl Gate Threshold Voltage

1010ni

On-State Drain Current

@

ROSfon) Static Drain-Source On-State
Resistance ®

®

ALL

Test Conditions

VGS = OV

100

nA

VGS = 20V

-100

nA

VGS= -20V

250

~A

VOS = Max. Rating, VGS = OV

1000

~A

VOS = Max. RatingxO.8, VGS = OV, TC - 125 DC

VOS ) 1010ni x ROSlonl max.' VGS = 10V

VGS = 10V,I0 = 7.0A

gfs

Forward Transconductance

ALL

6.0

11

-

SIUI

Ciss

Input Capacitance

ALL

2000

3000

pF

Coss

Output Capacitance

ALL

400

600

pF

e rss

Reverse Transfer Capacitance

ALL

-

100

200

pF

tdlonl
tr

Turn-On Delay Time

ALL

-

35

ns

VOO = 210V,I 0 = 7.0A, Zo = 4.7!l

Rise Time

ALL

-

50

ns

See Fig. 17

150

ns

-

70

ns

(MOSFET switching times are essentially
independent of operating temperature.)

t!ILo!n

Turn-Off Delay Time

ALL

tf

Fall Time

ALL

-

Qg

Total Gate Charge

ALL

-

82

120

nC

(Gate-Source Plus Gate-Drainl

Qgs

Gate-Source Charge

ALL

-

40

Qgd

Gate-Drain I"Miller"l Charge

ALL

-

42

-

nC

LO

Internal Drain Inductance

ALL

-

5.0

-

nH

LS

Internal Source Inductance

ALL

-

12.5

-

nC

nH

V OS ) 1010ni x ROSlonl max.' 10 = 7.0A
VGS = OV, VOS = 25V, f = 1.0 MHz
See Fig. 10

V GS = 10V, 10 = 16A, VOS = 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured between
the contact screw on
header that is closer to
source and gate pins
and center of die.
Measured from the
source pin, 6 mm

10.25 in.1 from header
and source bonding

pad.

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthCS

Case-to-Sink

Mounting surface flat, smooth. and greased.

RthJA

Junction-to-Ambient

Free Air Operation

UN ITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. 16171 861-6540
TWX 17101 326-6509 • TELEX 95-1064

4-395

PRINTED IN USA

•

UFN450

UFN451

UFN452

UFN453

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSO

Continuous Source Current
IBody Olodel

Pulse Source Current
IBody Oiodel @

Oiode Forward Voltage ®

UFN450
UFN451

-

-

13

A

UFN452
UFN453

12

A

~

-

-

UFN450
UFN451

-

-

52

A

UFN452
UFN453

-

-

48

A

UFN450
UFN451

-

-

1.4

V

UFN452
UFN453

-

-

1.3

V

TC ~ 25°C, IS ~ 12A, VGS ~ OV

1300

-

ns

T J - 150°C, IF - 13A, dlF/dt - 100A/"s

trr

Reverse Recovery Time

ALL

QRR

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time


, 10(on)
, x ROS(on)

lOOms

~F:~: ~:o
III
10

20

50

100

1,~I~!

I I
200

DC

it

500

Vas. DRAIN·TO·SOU RCE VOLTAGE (VOLTS)

4·396

PRINTED IN U.S.A

UFN450 UFN451

UFN452 UFN453

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Ca.e Vs. Pulse Duration

I
0·0.5

m.n..

II

NOTES

f-b.2
0.1

~2~

lb6.05
>==0.02
51--0.01
2
1

1. DUTY FACTOR, 0"

SINGLE PULSE {TRANSIENT
THERMAL IMPEDANCE} I

I I

3. TJM - Te" POM ZthJCIt).

11 1111
2

10-3

10-4

5

10-2

'I. SQUARE WAVE PULSE

Fig. 6 - Typical Transconductance Vs. Drain Current
20

/

/'

V

./

V

~

V
~

~
I--

*"

2. PER UNIT BASE· R,hJC • 0 83 OEG. CIW.

2

5

~URATION

10-1

1.0

10

ISECONOS}

Fig. 7 - Typical Source-Drain Diode Forward Voltage

~
T~. 2sdc

--- .....

t===: 1== T~ • 2S0C

~

I

~

TJ" 150°C

I

IV V

(I

TJ'" 15QoC

~V

I

JV
III

5
vas> lo(on) x ROS(on) mix.

'{f

B0j'PUlS1ETEST

TJ =25 DC

1.0
10

15

20

1

J.l

I
25

1

JI1
o

1

10. CRAIN CURRENT (AMPERES)

VSO. SOURCE-TO·ORAIN VOLTAGE IVOLTS}

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature

~GS. \ov

1.2 S

2. 2

V

I
I
lOS' SA

V

S

"..

J...--'

S

..".
5

V

./

~

8

..LV

I-""

J...--'

L

V

/

0

S

6 _. "

07S

-40

./

4

40

80

120

O. 2

160

-40

TJ. JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

V

.L

40

80

120

160

TJ. JUNCTION TEMPERATURE (DC)

4-397

PRINTED IN U S.A

UFN450

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
Cia'" CIII + CgII. Cds SHORTED

k-CID 'Cgd
3200

2400

w

C
~CQI5"Cds+ ~
91+ gd

z

;'!

;:;

"'
l\

20

f=lMHz
I

~

;t

;:\ 1600
u"

,

\

""

o.

~

......... I'---. t

Vas" 4QOV

~

>

lSS

w

u

10

"- .........
~

..,~
...
;jj

I
,/

........ ~'"

10

20

40

30

28

~

~
~

..........

/

=>

5)

6

~ o.5

!
;0.4

"" "~

~

V.OSI'" MEASURED WITH CURRENT

L

PULSE OF 2 0 IJ.S DURATION

/
10

INITIAL TJ = 25°C. (HEATING
EFFECT OF 2.0

20

30

~s

40

140

UFN450.451

V

~

O.3

r--.... 1'. . .

r-- f--UFN4:.~ f'..
.........~

o.7

~

112

r-.....

12

VVGS.20V

w
u

84

r---

15

VGS'101

o.8

56

'i

Fig. 13 - Maximum Drain Current V•. Case Temperature

z

~

°

SI' FIGjRE

9, TOTAL GATE CHARGE (nC)

~

w
u

"

10 = l6A

50

Fig. 12 - Typical Dn·Resistance Vs. Drain Current

E 09

if

FOR TESTCIRCUIT

Vas. ORAIN·TO·SOURCE VOLTAGE (VOLTS)

1.0

~

~

I)

I

~

~oa

i'---

~~

=>

\ I\,

800

los .1100V
I
I
VoS' 250V
I
I

15

~

.....

UFN453

VGS'O

==:Cds+Cgd

-u

UFN452

Fig. 11 - Typical Gate Charge V•. Gate·to·Source Voltage

J

4000

UFN451

,

"I~

PULSE IS MINIMAl.)

50

60

o

70

25

50

10. DRAIN CURRENT (AMPERES)

75

100

125

150

TC, CASE TEMPERATU RE (OC)

Fig. 14 - Power Vs. Temperature Derating Curve

'-

140

[\.

120

't\.'\

~

~ 100
z

o

~
ill

80

'\

is
~

60

f:

40

~

"-

20

20

40

60

80

100

Te' CASE TEMPERATURE (OC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-398

'"

120

1\
140

PRINTED IN USA

UFN450 UFN451

Fig. 15 - Clamped Inductive Test Circuit

UFN452 UFN453

Fig. 16 - Clamped Inductive Waveforms

•

VARY tp TO OBTAIN
REQUIRED PEAK Il

VOS.R

OUT
IL4----<)--~......_ - '

Fig. 17 - Switching Time Test Circuit
El

Vos

r;U~ -

- -,,-;1r-__0-_-"~

I GENERATOR
.n I
I ig~RCE
IMPEDANCE
L ___ J
~

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED

SUPPl VI

-

o~1.5mA

--"'''''Ir....-'VV\,--o -VOS
IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-399

"':"

10
CURRENT
SHUNT

PRINTED IN

u.s

A

UFN510
UFN511
UFN512
UFN513

POWER MOSFET TRANSISTORS
100 Volt, 0.6 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Reslonl and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease or Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFN5lO

lOOV

0.60

4.0A

UFN511

60V

0.60

4.0A

UFN512

lOOV

0.80

3.5A

UFN513

60V

0.80

3.5A

MECHANICAL SPECIFICATIONS
UFN510 UFN511 UFN512 UFN513

TO-220AB

!EfIM3-S0UACE

482(ol~0)

I

3S6((I1401

I

!-t-+-+-'

g::: :~: ::: ::llm

~~j:~'r,~:

~(D1151

j!ECTION

D

x-x

tt----l

~~~:~:g;~:

2 04 (DOBDi

Dimensions in Millimeters and (Inches)

4/83

4-400

~UNITRDDE

UFN510 UFN511

UFN512 UFN513

ABSOLUTE MAXIMUM RATINGS
UFN512

UFN513

Units

100

60

100

60

V

100

60

100

60

V

Continuous Drain Current

4.0

4.0

3.5

3.5

A

10@TC = 100°C

Continuous Drain Current

2.5

2.5

2.0

2.0

A

10M

Pulsed Drain Current

16

16

14

14

VGS
PO@TC = 25°C

Gate - Source Voltage

UFN510

Parameter

IOl on)x

~ 4.0
z

/
/ /

I- 801I1.11 PULlE
TES!
I

z

6~- -

2.4

0

7.2

_

6.4

~

8.0

o1

r- TC·25'C
TJ· 150'C MAX.
r- "'hJC • 6 4 Kffl
I-SINGLE PULSE

f:::

1.0

50

10m,

lOb~s-

DC
UFN511. 3
10

20

50

UFN510.2
100

200

500

Vas. DRAIN TO-SOURCE VOL lAGE (VOL lS)

4-402

PRINTED IN U.S.A

UFN510

UFN511

UFN512

UFN513

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration
>z

I

w

~

L

wz

1-1-

I

1.0

>=>

~~

NOTES:

0.5

-h,

NO
:::i~

~~ 0.1

3.02

0.05

}~

~

~2~

=005

0<

E

ffi.JL

iiIP

02

ffi~ 0.2

~~

•

0-0.5

;:'"

1. DUTV FACTOR, 0 '"

.. o.oi-

0.02

~

0,01 .A
10.5

:~

SINGLE PULSE (TRANSIENT

2. PER UNIT BASE' R'hJC - 6.4 OEG. C/W.

T(H~~~tL1~PE(OAN~E) ( (

3 TJM' TC' POM Z,hJC(tl .
10.3

2

10.2

10.1

10

1.0

'1. SOUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current
4.0
3.6

ill

2.8

w

2.4

10

-.Lpu!..ml
(
I~(on) ~
vias>

3.2

~

Fig. 7 - TVPical Source-Drain Diode Forward Voltage

ROSlon) maJ.

f

//

§

"z

I

TJ

2.0
1.6

/'

1.2

J/'

~

~

~

0.8
0.4

o

=

I

-55°C

~

TJ=25 0 C

.....

TJ = 1250C

I

II I
TJ" 25°C

-TJ=tSOOc

V. , /

I

r
o

I

J

I
0.8

1.6

2.4

3.2

4.0

4.B

5.6

6.4

7.2

J

o. 1

8.0

0.2

'0. DRAIN CURRENT (AMPERES)

Fig. 8 - Breakdown Voltage V,. Temperature

I

0.4 0.6 0.8
1.0
1.2
1.4
1.6
VSO. SOURCE·TO·ORAIN VOLTAGE (VOLTS)

1.8

2.0

Fig. 9 - Normalized On-Resistance VI. Temperature
2.50

1.25

2.25

./

.......

. /V
./

V

~

2.00

In
~

1.75

;ga

1.50

Ww

./

1/

~t:!

./

g~ 1.25
"> ..

,,/

V

~~

1.00

~

0.75

!

O.SO

~

....... I-"""

k" /
VGS - IDV
'0",·5A

025

0.7~0

-40

-20

20

40

60

80

100

120

0-&0

140

V

. /V

-40

.20

20

40

r

I

60

80

100

120

140

TJ• JUNCTION TEMPERATURE (DC)

UN(TROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·403

PRINTED IN U.S.A

UFN510 UFN511

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
SOD

I

I 1_

fi 'MHI'

w

u

200

U

100

l\

\ l\..

\
\

" r-

vps = 5~~ '-....

-

""'Cds+Cgd

z

~

-

COSl"'Cdl+~
os· gel

300

~

V~S· 2iv """'

Ct. = ell' + Cgd. Cds SHORTED
C,. • CgeI

~

Fig. 11 - Typical Gate Charge Vs. Gate·to-Source Voltage
20

I t.ol

400

f--

~DS

• BDV. UFN510. 512

~V

/0 ~

I

I

c!..

Ii

1/

C~

.C~

r-

UFN512 UFN513

/

10
20
30
40
VOS. ORAIN·TO·SOURCE VOLTAGE IVOLTS)

/

10 = 8A

sr F'GiRE li

FOR TEST CIRCUIT t--

50

4
~,TOTAl

Fig. 12 - Typical On·Resistance Vs. Drain Current

10

GATE CHARGE (nC)

Fig. 13 - Maximum Drain Currant VI. Case Temperatura

2.0
ROS(on) MEASURED WITH CURRENT PULSE OF

I
~
~

2.0JUDURATION. INITIAL TJ=25 0 C (HEATING

EFFECT OF

2'1"' PULSE IS MINIMAl.)

I---

-

........
r--... .......
........

1.5

vis=

~

r--....

IOV

z
o

w

~ 1.0

.........
.........

f - - f - - UFN512.513

6

:;;

~

Q~

g

0.5

V
S

i'- ="

~

-

VGS'20V -

I

~

.... ~

V ....

~

UFN510.511
.......

I

10

,

1\

IS

o

20

25

50

10, DRAIN CURRENT (AMPERES)

75

100

125

150

Te. CASE TEMPERATURE (OCI

Fig. 14 - Power Vs. Temperature Derating Curve
20

'\

"- I\.
\,

\
-~
o

UNfTRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

o

\.
r\

20

40
60
80
100
TC. CASE TEMPERATURE IDC)

4·404

120

140

PRINTED IN U.S A

UFN510

Fig. 15 - Clamped Inductive Test Circuit

UFN511

UFN512

UFN513

•

Fig. 16 - Clamped Inductive Waveforms

VARY Ip TO OBTAIN
REQUIRED PEAK IL

TO
PL

OUT

VGS"!,J-t

Fig. 17 - Switching Time Test Circuit
AOJUST RL

El

TO OBTAIN
SPECIFIED 10
V,

Rl

PULSE
GENERATOR

O.U.T.

r-----.,
I

I
I

L_

50n

I
I

_ _ _ ...J

TO SCOPE

O.Oln

50<1

HIGH FREQUENCY

SHUNT

Fig. 18 - Gate Charge Test Circuit

.-----<.> ~~gtA TE 0
SUPPlYI
SAME TYPE
AS OUT

-

OUT

0.r=[1.5mA

IG
CURRENT
SHUNT

UNITROOE CORPORATION. 5 FORBES ROAO
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064 .

4-405

10
CURRENT
SHUNT

PRINTED IN U.S A

UFN520
UFN521
UFN522
UFN523

POWER MOSFET TRANSISTORS
100 Volt, 0.3 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RoSton. and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFN520

lOOY

O.30n

8.0A

UFN52l

60Y

O.30n

8.0A

UFN522

lOOY

O.40n

7.0A

UFN523

60Y

O.40n

7.0A

MECHANICAL SPECIFICATIONS
UFN520 UFN521 UFN522 UFN523

TO-22DAB

TERM 4-

DRAIN

T!~~~3~-D::~:CE

TERM 1- DATE

l

4.82(O.~

~J

"'~
9I"'lO'

H~l:ml

7.110.1151
'2.6410.0801

5.33(0.2101
4.83 (o.1i01
j!ECTION

x-x

0

'1----+1
~:~t :~:~I

Dimensions in Millimeten and (Inches)

[1::D
4/83

4-406

_UNITRODE

UFN520

UFN521

UFN522

UFN523

ABSOLUTE MAXIMUM RATINGS
UFN520

UFN521

UFN522

UFN523

Units

100

60

100

60

V

Drain - Gat. Voltage (RGS = 1 Mil) (j)

100

60

100

60

V

Continuous Drain Current

8.0

8.0

7.0

7.0

A

10@TC= 100°C Continuous Drain Current

5.0

5.0

4.0

4.0

A

32

32

28

28

Parameter
Drain ~ Source Voltage

VOS
VOGR
10@TC- 25°C

CD

10M

Pulsed Drain Current @

VGS
PO@TC = 25°C

Gate - Source Voltage
Max. Power Dissipation

Linear Derating Factor

I

32

40

(See Fig. 141

W

0.32

(See Fig. 14)

W/K

(See Fig. 15 and 161 L - 1 OO~H
32
I
28

Inductive Current. Clamped

ILM

Operating Junction and
Storage Temperature Range

TJ
Tstg

Lead Temperature

•

A
V

±20

A

28

I

-55to 150

°C

300 (0.063 in. (1.6mm) from case for lOs)

°C

ELECTRICAL CHARACTERISTICS @ TC = 25'C (Unless otherwise specified)
Parameter

BVOSS

Drain - Source Breakdown Voltage

VGSlthl Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

UFN520
UFN522

100

-

-

V

VGS = OV

UFN521
UFN523

60

-

V

10 = 25Ol'A

ALL

2.0

-

4.0

V

VOS - VGS' 10 - 25Ol'A

Test Conditions

IGSS
IGSS

Gate-Source Leakage Forward

ALL

-

-

500

nA

VGS = 20V

Gate-Source Leakage Reverse

ALL

--

-500

nA

VGS - -20V

lOSS

Zero Gate Voltage Drain Current

-

-

250

I'A

VOS = Max. Rating, VGS = OV

-

1000

I'A

VOS = Max. Rating xO.8, VGS = OV, TC = 125°C

UFN520
UFN521

B.O

-

-

A

UFN522
UFN523

7.0

-

-

A

UFN520
UFN521

-

0.25

0.30

II

UFN522
UFN523

-

0.30

0.40

II

10(on)

On-State Drain Current

®

ROSlon) Static Drain-Source On-State
Resistance ®

ALL

V OS ) 10(on) x ROS(on) max.' V GS

VGS = 10V,I0

9fs

Forward Transconductance

ALL

1.5

2.9

-

S (UI

Ciss

Input Capacitance

ALL

450

600

pF

200

400

pF

50

100

pF

@

Coss

Output Capacitance

ALL

-

C rss

Reverse Transfer Capacitance

ALL

-

tdlonl

Turn-On Delay Time

ALL

-

20

40

ns

tr

Rise Time

ALL

-

35

70

ns

td(offl

Turn-Off Delay Time

ALL

100

ns

Fall Time

ALL

-

50

tf

35

70

ns

Og

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ALL

-

10

15

nC

Qgs

Gate-Source Charge

ALL

-

6.0

-

nC

°gd

Gate-Drain ("Miller"l Charge

ALL

-

4.0

-

nC

LO

Internal Drain Inductance

-

3.5

-

nH

ALL

-

4.5

-

nH

= 4.0A

vos ) 10(onl x ROS(on) max.'
VGS = OV, VOS

= 10V

= 25V, f

10

4.0A

= 1.0 MHz

See Fig. 10
VOO = 0.5 BVOSS,IO
See Fig. 17

= 4.0A, Zo = 5011

(MOSFET switching times are essentially
independent of operating temperature.)

V GS

= 15V, 10 = lOA, VOS = O.B Max. Rating.

See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
contact screw on tab
to center of die.
Measured from the

Modified MOSFET
symbol showing the
internal device
inductances.

drain lead, 6mm 10.25
in.1 from package to
center of die.

LS

Internal Source Inductance

ALL

-

7.5

-

nH

Measured from the
source lead. 6mm

(0.25 in.1 from
package to source
bonding pad.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthCS

Case-to-Sink

Mounting surface flat. smooth. and greased.

RthJA

Junction-to-Ambient

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (6171 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-407

PRINTED IN

u.s

A

UFN520 UFN521

UFN522 UFN523

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
(Body Diode)

Pulse Source Current
(Body Diode) @

®

Diode Forward Voltage

Modified MDSFET symbol
showing the integral
reverse P~N junction rectifier.

UFN520
UFN521

--

-

B.O

UFN522
UFN523

-

-

7.0

A

UFN520
UFN521

-

-

32

A

UFN522
UFN523

-

-

28

A

UFN520
UFN521

-

-

2.S

V

TC

UFN522
UFN523

TC ~ 2SoC, IS ~ 7.0A, VGS = OV

A

~

2SoC, IS

~

8.0A, VGS

~
~

OV

2.3

V

t"
ORR

ALL

-

-

Reverse Recovery Time

280

TJ = lSO·C, IF - 8.0A, d)Fldt - 100AI"s

Reverse Recovered Charge

ALL

-

1.6

-

ns

"C

T J - lSO·C, IF = 8.0A,d(Fldt. 100AI"s

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS

® Pulse Test: Pulse width .. 300"s, Duty Cycle .. 2%.

G) T J = 25°C to lSO·C.

+ LO'

@ Repetitive Rating: Pulse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics
20

20

/'0J

-St..,!SETESl

8O~PULSETEST

9~-

16

I
8V-

-

16

.l-I ,~- -

125 'C

i

12

z

8

i

I

VGS''I-

AI

T"I 1,,---V
T'I"'I"---- .II fY

~

-

//
1/,

I

vos> 10(on) x ROS(onl max.

TJ=-~~O!~

i

E

/I

IJ

/J.'/
rJ'

5~-

10

20

30

40

~

so

80loJpULSE1TEST

I--

Fig. 4 - Maximum Safe Operating Area
OPERATION IN THIS
100.~~
50
AREA IS LIMITED

7l :J.......... '.tv'j
1O,~y

A'

10

VGS. GATE·TO-SOURCE VOLTAGE (VOL TSI

Fig. 3 - Typical Saturation Characteristics

0

W
4

Ves. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

c- UFN520. 1

f-

BY ROSI,,)

8

8

j,

W. V
bV
IJ. V
,
iX'
If!
•

~

)V

't.-

1
100",-,

I
VG;"V-

-

I
I

f-'y

I
'Y

1

0·11·'::.0,.....-,!-...L...~I..1.1~10:-'-:2!:0,.....-'-:'50:'-'.l.!,~OO:-'-~20::-0-'--'-:5±OO!-W.IJ

,

Vas. DRAIN·TO·SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

VOS, ORAIN·TO-SOURCE VOLTAGE IVOLTSI

4-408

PRINTED IN U.S.A.

UFN520 UFN521

UFN522 UFN523

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

I

•

0=0.5
NOTES'
f-O.2

~

.-

f-O.,
, EO.05

lTl.JL

I11III'

~2~

F-U.02

!~

1. DUTY FACTOR, 0;;

~y

SINGLE PULSE (TRANSIENT

THERMAL IMPEDANCE)

2. PER UNIT BASE' RthJC' 3.'2 OEG. CIW.

,

3. TJM' TC' POM ZthJClt).
'0.3

2
w2
'0"
t,.SQUARE WAVE PULSE OURATION ISECONOS)

Fig. 6 - Typical Transconductance Vs. Drain Current
5

4

1/

r/

3

1

k
IJ

IL

./
./

V

--

V

TJ

~

2

l-",!= '==

2

;;.",L-: i=
TJ

..... V

~

~
~

~ 12~oC

l

Vas> 10(on)

~

2

i

W

0

I(

1

""'"

t-TJ= "O'C

/11

2

J

I

0
16

TJ'" 1500C_

5

t--

ROSlon) max

80iSPULSjTEST

12

TJ:250C

5

1
--

'0

Fig. 7 - Typical Source·Drain Diode Forward Voltage

.... 1-- "-1

V

1.0

10

'0. DRAIN CURRENT fAMPERES)

,

TJ ; 25°C

VSO. SOURCE·TO·DRAIN VOLTAGE IVOLTS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On·Resistance V,. Temperature
22

12 5

5

-

..L

L"

j.--

j....-" V

5

. /V

.,.""'"

l/
/'
./

5 .......

,/

5

.......

07 5

-.0

,r

40

80

120

"

I
vGS = 'ov
10=3A -

-40

-

1 1

2

'60

TJ. JUNCTION TEMPERATURE tDC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

L

40

BO

'20

TJ,JUNCTION TEMPERATURE (DC)

4·409

PRINTED IN U.S A..

UFN520

II JGs·J

I

..

0:

.e
il

600

~

!i
~

~

'~

\

~

.;

200

I

I-I MH,

c.. '

\

\

-........ -..

Cd,' CC"'r.r

II

UFN523

20

Cia =c,.' C... Cd, SHORTED _
Crw -C..

800

UFN522

Fig. 11 - Typical Gate Charge VI. Gate·to.source Voltage

Fig. 10 - Typical Capacitanca VI. Drain·to·Source Voltage
1000

UFN521

Sd

-Cell + Cgd

-

--,---

~

--

'"

m

-

Vos = BOV.

10

"'"=>
0
6..,.

~

..

I

'"

'0-10A
FOR TEST CIRCUIT

I

>

crssi

/

10
20
30
VOS' ORAIN·TO-SOURCE VOLTAGE (VOLTS)

~

II

~.;,

C~..

UFN5~. 522 ~ ~
VDS' 50V

~>

I
C

~

VDS 20V
15

~

rFlrRElt
12

50

16

10

0,. TOTAL GATE CHARGE I.C}

Fig. 12 - Typical On·Resistance Vs. Drain Current

Fig. 13 - Maximum Drain Current VI. Case Temperature
10

0.8
0;

i.
"

z

i

0.6

I-- I--VG

I
=

.........

10V

........

.........

is

"'"=>
"':=
z

0.'

g

~

0.2

-

--I'

f--~DS(o.)

i'........

"

UFN520. 521

~,

UFN522.523

)

0

~

........
......... :---.

~:-...

V

'"

---~20V

MEASURED WITH CURRENJ PULSE IDF . _ i - -

2.0"'5 DURATION. INITIAL TJ" 250 C. (HEATING

EFFECT OF 2.0 #1$ PULSE IS MINIMAl.)

ro

w

~

o

~

~

n

~

'0. DRAIN CURRENT (AMPERES)

~

:\..
~

rn

,'\
~

Te. CASE TEMPERATURE (OC)

Fig. 14 - Power Vs. Temperature Derating Curve
'0

'\

5

~

z
o

~
~

30

20

'"
~

15

e

10

"

"-'\

25

I\.

1'\

5

20

UNITROOE CORPORATION· 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

\

"

f

40
60
80
}OO
TC. CASE TEMPERATURE I'C)

4·410

120

'\
140

PRINTED IN U S.A.

UFN520 UFN521

UFN522 UFN523

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit

VARY tp TO OBTAIN

VGS.R

REI1UII'ED PEAK IL
OUT
IL"'--<)---<~---'

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR

r-----..,
I
I
I

L _

50n

I
I

___ ..J

TO SCOPE

O.Oln

50n

HIGH FREQUENCY
SHUNT

Fig. 18 - Gate Charge Test Circuit
+Vos
IISOLATEO
SUPPLY)

-

0I=rr:·5mA

-.l\i'V'v-.....-'VV\,--O -Vas
IG

ID

CURRENT

CURRENT
SHUNT

SHUNT

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-411

PRINTED IN U.S A.

UFN530
UFN531
UFN532
UFN533

POWER MOSFET TRANSISTORS
100 Volt, 0.18 Ohm

N-Channel

'

..
FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RCS 10(on) x ROS(on)

16

:5.

12

/h
'II
Ii '/

z

~

y- -

r

4V-

10
20
30
40
Vas. DRAIN TO-SOURCE VOLTAGE (VOL IS)

-

/1

/I

i

VGS"'(= =

,

~8X.
j

i"

r

- t, P~

E

TJ"+125 DC

~.TJ"25'C
TJ" i55'C

50

rJ

~ '(/J
~V

10

4

VGS. GATE·TO·SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4. - Maximum Safe Operating Area

100 FU"'FN"'530=',=lq::mffioiPpEiER;;A~nilio'NNill.11TFHHiillS;-jEIHffiI

10
80,..sPUlSE TEST

9~~
8V~

A 'l

~V

~v

V

..-J

~ ~V

~

501= UFN532,3 .

i'Y w'L ./
~ jli V-

~'/ /

IhV

~~~~t$~~A~RfEfl~S*I~M~'T~E~O~BY~RO~S~I'~"J~tt~m
~.

ffi V

IOJI

~

--

U30!I[,

10

UFN532.3

0,,".

10p:s

lOb ."',-+++++++1

"...

:>
z

~
~

"z

~E 10~~~~~~~~~~~~~'0ro~m~S~t!~1
~TC=25DC

0.5

~

DC

TJ" 1500C MAX

t- RthJC " 1 67 K!W +-+-i-H+t+ttlI--H--++t-t1-ttl
02r--ISliGLrPn'!EII' - +-++-tfjHlt uFN53il • 2

[GS"'I

04
0.8
12
16
Vas. DRAIN TO SOURCE VOLTAGE (VOL IS)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. 1617) 861-6540
TWX 1710) 326-6509 • TELEX 95·1064

~

20

I IIIII

~F~li3

..L

"':0-L-':-..l...'--':-UJ..u'0:-'-2:':O:-'--~5':'OWJ'~OO:-'--=20:::-0..L..-':5=00:'-'-'.I.I

20

Vas. DRAIN TO·SOU RCE VOL 1 AGE (VO lIS)

4-414

PRINTED IN

u.s

A

UFN530

UFN531

UFN532

UFN533

Fig. 5 - Maximum Effective Transient Thermal Impedance. Junction·to·Case Vs. Pulse Duration

...z

I

i?i

;L

......
wz

1.0

>:>
i=~

~~

0.5

0.2

~~

01

:::;; Iii -

0.1

~

-

- +1-t-H+tt-+-t

SINGLE PULSE (TRANSIENT _

ffiSl.
~2~
1 DUTY FACTOR, 0 = :,'

__

1-+-+-+-+++++iltERi A\ lMPtonil 11,+--++--+-H-H-ttt-H-t-t+1-+ttt--t-t ,. PER UNIT BASE _ RthJC _ 167 OEG C/W.

,i"'"

~

-

~-+++f-tttt--t-+--++++++tt-...+-t

0.05

coo(
z.~ 0.05 ~001
Uw

~"

•

NOTES

f-02

Z
C
woo(
NC
::;~

00("

0-05

0.0'

t=tt:::j:::t:w:tttt=:::j:=!:::::j:::j:ttt~=t=~ttl::j:j:ttt=tt=!:tttttti.=-~ 3 TJM - Te '" POM ZthJC1d

0.01
10-5

10-1

10-3

10"

10

1.0

II. SQUARE WAVE PULSE OURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source-Drain Diode Forward Voltage

10

---

--

/ ' ..-

Vj.-

TJ" 25 0 C
TJ - 55 D C

1..0""

~-'5,l

"TJ - 150°C

/'
/I

TJ:125 0 C

f='
1-'-

U V

TJ"" 150 a C

f.V

vas> IO(on) x ROS(on) max.

"1

I

8O('PULf'Tl_

V

10
10

15

20

25

f

TJ- 50C

I I

I

o

1o. DRAIN CURRENT jAMPERES)

VSD. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Fig.8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance V,. Temperature

125
2

,.....

,.V

~

I"

-

-

I

--

r

. /~

... V

~

./

./
./

VGS" lOV
IO=6A . -

I
015
·40

40

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

120

80

TJ, JUNCTION TEMPERATURE

-

I

02

160

·40

tOCI

40

80

120

TJ, JUNCTION TEMPERATURE (DC)

4·415

PRINTED IN U.S.A

UFN530 UFN531

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage

20 0
160 1--+-1-+1---+-1-+-

UFN532 UFN533

20

r---r--,.--r--.--,--r-r-...,--,-..,

It

G,· J
I "., M~' I I

!

~
~

VDS'20V

1'-...

- - vDS'SOV

Cill • C.. + cgd. Cds SHORTED -

c'" • cgd

Vos ~ sov. UFN51, 532 "---

-

"--+-1-+- COlO • Cds + / .."+Ccgdgd

~~

-

1200,.

~-+_+-_+_+-~-_C_ds~+_C~gd-r_I--+--1

~. 800rs\ttn:eC!QE~~
400

\~

c:
10

I

/

Q

20

30

40

U

I

L--+--I--+--+-l

_

/

'D"lIA
FOR TEST CIRCUIT

TF'TEli

50

16

Vas. DRAIN TO SOURCE vOLTAGE (VOLTS)

O~

I

I'"

16

.......

D••

vJs

z

'"u

z

IOV

~
~

0.3

'"z>:'
~

0.2

j

0.1

40

Fig. 13 - Maximum Drain Current V,. Case Temperature

RDSI:'J MEASU'RED WITH' CURRENi PULSE
2.0 JIS URATION. INITIAL TJ '" 25°&. (HEATING
!;!
0.5
'-- EFFECT OF 2.0
PULSE IS MINIMALl
~
u
z

.,is

32

20

0.6

~

24

-

Og. TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On· Resistance Vs. Drain Current

~

~~

V

J
VGS •

10

20

30

--

I"-I"-- ....... ........ r--..,UFN530, 531

U::~

~

~

I":::-.-

r

~

OV

o

50

40

25

60

50

' 0 , DRAIN CURRENT lAMPE RES)

75
100
TC, CASE TEMPERATURE I'C)

125

~
150

Fig. 14 - Power VI. Temperatura Derating Curve
0
0

-

I\.
'\..

0

'\

0

'\

0

'\

I'\..
'\.

0

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

.0

40
80
100
Te. CASE TEMPERATUAE (Oe)

4·416

'\

12G

140

PRINTED IN U.S.A.

UFN530 UFN531

Fig. 15 - Clamped Inductive Test Circuit

UFN532

UFN533

•

Fig. 16 - Clamped Inductive Waveforms

~

VARY Ip TO OBTAIN
REQUIRED PEAK II

Ip'

I

VGS·R

I

I

" ' .....

"
""

\

"
\..._-----

Fig. 17 - Switching Time Test Circuit

Vo

-.~--.. TO SCOPE

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

O~15mA

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEl. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

IG

10

CURRENT
SHUNT

CURRENT

4-417

SHUNT

PRINTED IN U.S.A

UFN540
UFN541
UFN542
UFN543

POWER MOSFET TRANSISTORS
100 Volt, 0.085 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslo{o'n)x

40

40

RaSlon) max.

~

i

...~

t

TI=-li5 C,
Tp260 C,
TJ = 125 0C"

30

ly

I

z 20

~
=
E

VOS'
10

l

6~

j

10

5~

,J.'"

4~
10
20
30
40
VOS, ORAIN·T0-60URCE VOLTAGE (VOLTS)

so

I.
If/ /
Z",
DV

rJ

I'

"

, 8
VGS, GATE·TO·SOURCE VOLTAGE (VOL TSI

Fig. 3 - Typical Saturation Characteristics

10

Fig, 4 - Maximum Safe Operating Area
1000

50

40

/V
9V

r-IOLPUJETEST

~

...

30

z

20

I
~
E

~

=
10

L
rr

V
'--

~
~

~V

~~

OPERATION IN THIS
AREA IS LIMITED
BY ROS(on)

200

=

UFN540,l
100

~

.7V

-

VGS = 6V

-

~

SOO

l..,...ooo

~ .,8V I '

~

!Ii

~

'" so
~ ~
20
B
UFN542,3
z
~

II--

;;:
§

10

E

'i~sI

TJ'" 150aC MAX
RthJC= 1 OK/w

IOms
lOOms

UFN541,3
UFN540,2
10
1.0

•

VOS, ORAIN·TO·SOURCE VOLTAGE IVOLTS)

4-420

~,

25

fiNIGLri"ISil

4 V _ I--

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

10~s

, tc ~ 10ci

5 V - I--

I

-

UFN542,3

DC

10
20
50
100
200
Vas. DRAIN·TO SOURCE VOLTAGE (VOLTS)

500

PRINTED IN U.S A

UFN540 UFN541

UFN542 UFN543

Fig.5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
1

•

0'05

mn
~2~
NOTES.

f-~.2
f-0.1
EO.05

-

r-0.02

~O.01

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE!

I--t"T

1--

f-

1 DUTY FACTOR. 0"

-

:~

2 PER UNIT BASE" RthJC" 1.0 DEG C!W.
3 TJM - Te = POM ZthJC(t)

10-3

10-4

10-2

10-1

10

10

il,saUARE WAVE PULSE DURATION (SECONDS)

Fig_ 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Tvpical Source-Drain Diode Forward Voltage

15

TJ'"

~

tJ

V

12

/

!

V

§

50

-55 DC

-

~

r/

~
~

~

30

20

'0. DRAIN CURRENT (AMPERESI

'"

Fig_ 8 - Breakdown Voltage Vs_ Temperature

2

I

o

II
TJ= 25 De

'I'

1

1

I I

04
0.8
1.2
1.6
VSQ, SOURCE· TO-DRAIN VOLTAGE (VOLTS)

1.05

V

=:;

~i

"'0

~~ 095
Z

~
Q

2.0

Fig.9 - Normalized On-Resistance Vs. Temperature

115

~

~

TJ' 150'C

2.5

>

",;:l

-

10

50

40

I

II

5

~

1.25

~s

10

z

E

Q

/1

w

Vas> 'O(on))( ROSlon) max.

;

rJ'

...z

Tj'12JC

8? IJI PU ~SE TE~T

10

A~

~ 20

'/'

IV
UV

~

~

V

,.,

........ ~

~

~

... V

... V
i,...o-"

........

./

....... . /

,

VGS'10V
,
'0= 16A

0.85

~
0.75
-40

o

40

80

120

o

160

-40

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

40

80

120

160

TJ. JUNCTION TEMPERATURE fDC)

TJ. JUNCTION TEMPERATURE ('CI

4-421

PRINTED IN U.S A

UFN540 UFN541

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
2000

1600

UFN542 UFN543

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

.!.

Cia' Cgo+ Cgd. Cd. SHORTED
I
r C.... Cgd
_VGS'OV
~
f;lMHz
~COII'C"+ go +Cgd

20

.... -C,,+Cgd

~

\

VOS=30~~

C,"

r-_V~S'50~

vos

\.
400

\

[""-... ~

COlO

-r-

........
w

cL
W

~

~

-~

40

,
BOV, UFN540,

10·34A

/

V

%

20

~

t---

z

VGS

~

l.ov

Z

~

o. 1

J

J
------~
20

......
.........

18

~

-v;:~

UFN540.54'

r- -

" ~~

z 12

-

"-

UFN542.~ t'-...

i

u

C>

r-...

~

C>

"'"

........
~
........
........

24

~ 0.2

C>

80

30

!
.,."'

60

Fig. 13 - Maximum Drain Current Vs. Case Temperature

lMEASURE~

ROS(Onl
WITH CUIRRENT pulsE OF
2.0ps [JURATION. INITIAL TJ '" 25DC. (HEATING
r- EFFECT OF 2.0 p. rlSE ~S MINIMAl.l

w

40

Og. TOTAL GATE CHARGE InC)

Fig. 12 - Typical On·Resistance Vs. Drain Current

I

~

FOR TEST CIRCUITSI E FIGUrE 18 I

VOS. ORAIN·TO·SOURCE VOLTAGE (VOLTSI

0.3

...J..

'''~
54~

/

r--

~

=

'1~

E

\

60
80
40
10. DRAIN CURRENT (AMPERESI

100

o

120

15

50

75
100
Te, CASE TEMPERATURE (DCI

125

ISO

Fig. 14 - Power Vs. Temperature Derating Curve
140

g

120

~ I-\.

"

I\.

!. 100
z

C>

~

80

15
'" 8U

~

,e

"

t\..

""
r\.

I\.

40
20

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

" "-

40
60
80
100
TC. CASE TEMPERATURE (DC)

4-422

I\.

120

~

140

PRINTED IN USA

UFN540 UFN541

Fig. 15 - Clamped Inductive Test Circuit

UFN542 UFN543

•

Fig. 16 - Clamped Inductive Waveforms

VARY', TO OBTAIN
REQUIRED PEAK 'L

VOS'

R .

D_UT........"9'

'L---<>--~~-~

Fig. 17 - Switching Time Test Circuit
30V

ADJUST RL TO OBTAIN
SPECIFIED 10

3.0!1
VOS

r,U~ -

- -o_l,.-__-o-_--''-t-~

I GENERATOR
I ;~~RCE
Jl I
LIM'EOANCE
___ J

Fig. 18 - Gate Charge Tatt Circuit

..----0 ~~g~ATED
SUPPLY)

SAME TYPE
AS OUT

o

J=n.5

-

OUT

mA

--'\.IV''''.....-'\/'IA.,-o() -VOS
IG
CURRENT
SHUNT

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (71D) 326·6509 • TELEX 95·1064

4-423

ID
CURRENT
SHUNT

PRINTED IN U.S A

UFN610
UFN611
UFN612
UFN613

POWER MOSFET TRANSISTORS
200 Volt, 1.5 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RoStonJ and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Brea kdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high·power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

UFN610
UFN611
UFN612
UFN613

200V
150V
200V
150V

1.50
1.50
2.40
2.40

2.5A
2.5A
2.0A
2.0A

MECHANICAL SPECIFICATIONS
UFN610 UFN611
TERM4DRAIN

UFN612 UFN613

TO·220AB

...J 1-.1.39(0.055)
'-.1'· 051 (0020)

685(0270)
585(02301

TERM 3 - SOURCE

l

482(Ol~'
!-t--f-+--'

356(0140)

m::~:l ::l:m~

~j~:~~~:

--l
292(01151

1!ECTION x-x

D

TI--I

~!~ :~ ~~:

204(0080i

Dimensions in Millimeters and (Inches)

[1JJ
4/83

4-424

_UNITRDDE

UFN610 UFN611

UFN612

UFN613

ABSOLUTE MAXIMUM RATINGS
UFN610

UFN611

UFN612

UFN613

Units

200

150

200

150

V

Dram - Gate Voltage IRGS = 1 MOl (j)

200

150

200

150

V

Continuous Drain Current

2.5

2.5

2.0

2.0

A

Continuous Drain Current

1.5

1.5

1.25

1.25

A

10

10

8.0

8.0

Parameter

VOS

Drain - Source Voltage

VOGR
10@TC - 25°C
10@TC

~

100"C

 lol(on) x ~OSton) max.l

=
=

I

u

6i- r-

2

~

1.5

20

E

1.0

o

10

20

3D

40

/J

10

5t"""4t ___

0.5

ill

~

o
o

50

10

Vas. DRAIN-TO-SOURCE VOLlAGE {VOLTS)

VGS. GATE·TO SOURCE VOLTAGE (VOLTS)

Fig. 4 - Maximum Safe Operating Area

Fig. 3 - Typical Saturation Characteristics
50

5.0 r--,..-r--,..-r--,..-r--,--,--,---,

_~",..ls, T,IT -+---+-+-+--I--!---I

40

/)

~

2.0

o

'f/

t--SO ~s PULSE TEST

w

25

I II

20

I--+--+----+-+-I--+-+':~ ~ ~

UFN610. 1,

10

8V~P

~

/, /
i'---- II /
i'---- 'fj

OPERATION IN THIS
AREA IS LIMITED
BY ROSIon)

I
101015

UFN612.3

~

'5..."

I
2

~
c
E

10~j.L5

UFN610.1

3.0

U~12'131

I'

I'.

I
1m-l-

2.0

r- T~oi5'~
02

1.0

)-'-- RlhJC

o. ,"=

0~~~~~~_ _~~~~4~ __
o

1.0

2.0

3.0

4.0

0.05
10

5.0

VDS. DRAIN·TO·SOURCE VOLTAGE (VOLTSI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

I"-

r- TJ = 150 aCMAX.
0

~
..... ~

r-

UFN61 13
C= ••.
UFN61 0.2

6.4 KIW

SINGLE PULSE

10

20

50

100

IOms
I

1~8:

DC

200

500

VDS. DRAIN·TO.sOURCE VOLTAGE (VOLTS)

4-426

PRINTED IN U.S.A.

UFN610

UFN611

UFN612 UFN613

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration
~

z

I

w

~wz
:>=>

o -o.s

0.5

~~

NC

f-O.l

:;~

i~

0.1

~O.02

}~

N~

.......r

~2~

1.

_0.01

0.02

lJlJL

~i

EO.05

co<
z.~ 0.05
Uw

NOTES,

....

0.2

S~ 0.2

'"

•

1.0

1-1-

tffi

:;

2. PER UNIT BASE' R,hJC' 6.4 OEG. C/W.

SINGLE PULSE (TRANSIENT
~Hm~L '~PEIOANfEII I

~

0.01
10-5

~UTY FACTOR, 0 -

3. TJM - TC' POM Z,hJC(I)'
w~

10-4

2

5

w~

1~

2

1.0

10

'1. SQUARE WAVE PULSE DURATION (SECONOSI

Fig. 6 - Typical Transconductance Vs. Drain Current
4.0
3.6

0

r--~~PU~SETElT
VoS>IO(onJ x ROSlan)

~
!

Fig. 7 - Typical Sourca-Drain Diode Forward Voltage

3.2

ma~.

5

fl

2.B

i!l
w

U

z

2
2.4

0<

~

TJ=-55 0 C

2.0

iii

1.6

~

1.2

~

;i

0.6
0.4

0

..,.. l.- I--

1/

t ~~
1.0

TJ I'25,J

,...

-

./

11'/

o
o

j...-

TJ~ 125'~

5

O. 1

2.0
3.0
4.0
'0. DRAIN CURRENT (AMPERESI

1.0
2.0
3.0
4.0
VSO. SOURCHO·ORAIN VOLTAGE IVOLTSI

5.0

C

1.09

1.06

V

:>

./

./V

C

~ffi

1.04

~~

1.02

~V

.. t::!

5~

CIJ~

:=
~

C

/

0.99

V

0.9 7
0.94
0.9

2V

V

V

0.69
-55 -34.5 -14

2.04

v

1.89
w
U

~
t;

~

lL

1.74

1.59 t--

z

j

VGS"0V

r,o . LOA

./

1.43
~S
UN

., .

1.26

z!!

1.13

g~

COO
o-C

~
C

I

oo

V

V
V

0.82

0.52 k""

6.5 27 47.5 68 66.5 109 129.5 150
TJ.JUNCTION TEMPERATURE ('CI

V

0.98

0.61

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

5.0

Fig. 9 - Normalized On-Resistance VI. Temperature

V

1.1 1

i

I

2

Fig. 8 - Breakdown Voltage VI. Temperature

~

TJ'" ISOOC

~ TJ. 125'C

1.14
w

III

L

V

-55 -34.5 -14

4-427

6.5 21 41.5 88 88.5 109 129.5 150
TJ. JUNCTION TEMPERATURE ('CI

PRINT EO IN U.S A.

UFN610

Fig. 10 - Typical Capacitanca Vs. Drain·to.source Voltage
500

~
~

i

JGs·ol

I 'i

3110

c_ .. c.+~
p' 1'1
-c.+ tgd
I

c,.'

,

200

\

100

\ K

\

Fig. 11 - Typical Gate Charge Vs. Gate-to·Sourca Voltage

.lJ

I MH,'
Ct• •
cl'I. Cds SHORTEDCID -CI'I

U

..'"~

-

~

V~S'40~

15

;

-

--

A~
~

Vor 100~"-.

-

Vos

=

lCKlV. UFN610. 61

Q

>

~

.I. ~

I

,....

UFN612 UFN613

20

I

400

z
c

UFN611

cL

/

I

~

I

-

C'"

10
20
40
30
VDS. ORAIN-TO·SOURCE VOLTAGE (VOLTS)

10'3A
FOR TEST CIRCUIT

V

50

~EE FI~URE

'r

r-10

4

Og. TOTAL GATE CHARGE InC)

Fig. 12 - Typical Dn-Resistanca Vs. Drain Current

Fig. 13 - Maximum Drain Current Vs. Case Temparatura
3.0

RDS(o.) MEASURED WITH CURRENT PULSE OF
2.0,.. DURATION. INITIAL TJ' 250 C. (HEATING
EFFECT OF 2.0,.. PULSE ISM'j'MAL.i

f--- f--2.4

VG~"J

,...,V

I

-

-

I"- ~
1.8

2

1.2

~

--V

r---.. .....

~
.s~

I
I--~
GS '20V

i'....

r--

.........

UFN610.611

.........

UFN612. 613'

.........

I'-..
~

"
i"-

!?

o.6

~

r\

0

10

........

25

50

'0. DRAIN CURRENT (AMPERES)

15

100

125

150

TC. CASE TEMPERATURE (OC)

Fig. 14 - Power Vs. Temperature Derating Curve
20

'\

"-

" '\
\

l\.

'\.
o

UN)TRODE CORPORATION • 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861,6540
TWX (710) 326-6509 • TELEX 95-1064

o

20

60
80
100
TC. CASE TEMPERATURE (OC)

40

4-428

1'\

120

"

140

PRINTED IN U.S A.

UFN610

UFN611

UFN612

UFN613

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit

VARY Ip TO OBTAIN
REQUIRED PEAK Il

VGS =

:r.r-

TOL

OUT

tp .

Fig. 17 - Switching Time Test Circuit

PULSE
GENERATOR

r-----...,

:

5011

I

I

I

5011

L ____ ...1

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

o.r=TI

-

5mA

\r-~>-"'VV\,---o

IG
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710r 326·6509 • TELEX 95·1064

4-429

-Vos

10
CURRENT
SHUNT

PRINTED IN USA

UFN620
UFN621
UFN622
UFN623

POWER ·MOSFET TRANSISTORS

200 Volt, '0~8 Ohm
N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon. and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Cu rrent
Ease of Paralleling
No Second Breakdown
Excellent TemperC!ture Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY

Part Number

VDS

RDS(on)

ID

UFN620
UFN621
UFN622
UFN623

200V
150V
200V
150V

0.80
0.80
1.20
1.20

5.0A
5.0A
4.0A
4.0A

MECHANICAL SPECIFICATIONS
UFN620 UfN621 UFN622 UFN623

TO-220AB

TERM3-S0URCE

l

4.82101~

~

L....f-+-+-'

~~:::~: ::::~l;

-;;1

j!ECTlONX-X

~D
11---1

(0 1151

HH~'~~:

20410.Q80I

Dimensions in Millimeters and (lnchesl

[bD
4/83

4-430

_UNITRODE

UFN620 UFN621

UFN622

UFN623

ABSOLUTE MAXIMUM RATINGS
UFN620

UFN621

UFN622

UFN623

Units

200

150

200

150

V

200

150

200

150

V

Continuous Drain Current

5.0

5.0

4.0

4.0

A

10 @TC = 100°C Continuous Drain Current

3.0

3.0

2.5

2.5

A

20

20

16

16

Parameter

CD

VOS

Drain - Source Voltage

VOGR
10@TC-25°C

Drain - Gate Voltage IRGS = 1 M!J)

10M

Pulsed Drain Current @

VGS

Gate - Source Voltage

PO@TC-25°C

Max. Power Dissipation

CD

Linear Derating Factor

20

40

ISeeFig.141

W

0.32

ISee FIg. 141

W/K

I

Operating Junction and
Storage Temperature Range

TJ
T stg

Lead Temperature

V

ISee Fig. 15 and 161 L = tOO~H
20
I
16

Inductive Current, Clamped

ILM

A

f20

A

16

I

-55 to 150

°C

30010.063 In. 11.6mml from case for 10s1

°C

ELECTRICAL CHARACTERISTICS @ TC = 25"C (Unless otherwise specified)
Parameter

BVOSS Drain - Source Breakdown Voltage

VGSltl)] Gate Threshold Voltage

Min.

Typ.

Max.

Units

200

-

-

V

UFN621
UFN623

150

-

-

V

10

ALL

2.0

4.0

V

VOS - VGS, 10 - 250~A

-

SOO

nA

VGS = 20V

-500

nA

VGS = ·20V

2S0

~A

VOS = Max. Rating, VGS = OV

-

-

tOOO

~A

VOS = Max. RatingxO.B, VGS = OV, TC = 12SoC

UFN620
UFN621

S.O

-

-

A

UFN622
UFN623

4.0

-

-

A

UFN620
UFN621

-

0.5

O.B

n

UFN622
UFN623

-

O.B

1.2

n

Type
UFN620
UFN622

IGSS

Gate-Source Leakage Forward

ALL

IGSS

Gate-Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Drain Current

1010ni

On-State Drain Current (l)

ROSlon) Static Drain-Source On-State
Resistance ~

ALL

-

Test Conditions

VGS = OV

= 2S0~A

VOS ) 1010ni x ROSlonl max.' V GS = 10V

V GS = 10V, 10 = 2.SA
2.SA

9fs

Forward Transconductance (g)

ALL

1.3

2.5

-

S Illi

C iss

Input Capacitance

ALL

-

4S0

600

pF

C oss

Output Capacitance

ALL

-

150

300

pF

C rss

Reverse Transfer Capacitance

ALL

-

40

BO

pF

td on

Turn~On

ALL

-

20

40

ns

VOO = 2.S BV OSS ' 10 = 2.SA, Zo -

t,

Rise Time

ALL

30

60

ns

See Fig. 17

tdloffl

Turn-Off Delay Time

ALL

50

100

ns

tf

Fall Time

ALL

-

30

60

ns

(MOSFET switching times are essentially
Independent of operating temperature.)

Q9

Total Gate Charge

ALL

-

11

15

nC

Gate-Source Charge

ALL

-

5.0

-

nC

Qgd

Gate~Draln

ALL

LO

Internal Drain Inductance

Delay Time

(Gate-Source Plus Gate-Drain)

Q gs

("Miller") Charge

ALL

-

6.0

-

nC

-

3.S

-

nH

-

4.5

-

nH

VOS ) 1010ni x ROSlonl max.' 10
VGS = OV, VOS

= 25V, f

= 1.0 MHz

See Fig. 10

son

V GS = 50V, 10 = 6.0A, VOS = O.B Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
contact screw on tab
to center of die.
Measured from the

Modified MOSFET
symbol showing the
internal device
inductances.

drain lead, 6mm 10.2S
In.) from package to
center of die.

LS

Internal Source Inductance

ALL

-

7.S

-

nH

Measured from the
source lead, 6mm

10.25 In. I from
package to source
bonding pad.

.$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthCS

Case-to-Sink

MountIng surface flat, smooth, and greased.

RthJA

Junctlon-to-Ambient

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-431

PRINTED IN U.S A

•

UFN620 UFN621

UFN622

UFN623

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
(Body Diode)

IS

ISM

Pulse Source Current

(Body Diode)

VSD

®

®

Diode Forward Voltage

Modified MOSFET symbol
showing the mtegral
reverse P·N junction rectifier.

UFN620
UFN621

-

-

5.0

A

UFN622
UFN623

-

-

4.0

A

UFN620
UFN621

-

-

20

A

UFN622
UFN623

-

-

16

A

UFN620
UFN621

-

-

1.8

V

TC

TC ~ 25'C. IS ~ 4.0A. VGS ~ OV

UFN622
UFN623

~

~

25'C. IS

5.0A. VGS

JPl.
~

OV

-

-

1.4

V

trr

Reverse Recovery Time

ALL

-

350

-

ns

T J - 150'C. IF - 5.0A. dlFldt - 100 AIl's

ORR

Reverse Recovered Charge

ALL

-

2.3

-

I'C

T J - 150'C. IF - 5.0A. dlFldt - 100 AIl's

ton

Forward Turn-on Time

ALL

IntrinsIc turn-on time IS negligible. Turn-on speed

CD T J

~ 25'C to 150'C.

~ Pulse Test: Pulse width'; 3001'5. Duty Cycle'; 2%.

IS

substantially controlled by LS +

Ln.

@ Repetitive Rating: Pulse width limited
by max. Junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

10

10
lOY

r-

7Y

f--

~

I.IS

r-- 810,us PulSE TEJr
VOS>IOlon)'x ROS(on)

pulSE TEll

~.x.

6Y

~

/, /
/III
1/1
1/

I

VGS ~

sr

r-

If
TJ" 125°C

rT, !','c "'-, .J
'(jf
I
rC-

y
10

60

40

TJ=f55 0 C

80

~

~V

100

10

Vos. DRAIN·TO SOURCE VOLTAGE (VOLTS)

VGS. GATE·TO SOURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
100

,

OPERATION IN THIS
AREA IS LIMITED
BY RDS(on)

&0

lOr!, V

UFN62D.1

8v

8{)/.I)PULSE~EST /J6{

UFN622.3

~

I
If/

3

1

/

_VGS"V

l

10#,5

100#,5

UFN622.3

I

I,

~.

I

1m"
0.&

I

I'

~UFN620.1

4Y

0.1

I/'

1.0

Vas. DRAIN·TO SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

I~t±

OC

SI~G~E ~UIL~\ 111- i-

0.1

to

lOms

Te" 25°C
Tr 1500 e MAX.
R1hJC "'3.12 K!W

10

10

UfMI21.3
&0

100

UFN620.2

200

&00

VOS. ORAIN·TO·SOURCE VOLTAGE (VOLTS)

4-432

PRINTED IN U.S A

UFN620 UFN621

UFN622 UFN623

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

...z

I

w

ill

L
1-1-

wz
>:>

1.0

•

D' 05

;::'"

§~

I

I
NOTES

0.5

'h 2

ffi~ 02

~~

El.JL

....

f--O'

~~ 0.1
c«

0.05

~2----.j

2.10.05 1=0.02

"w

J~
'"

0.02

}

001

~.J!f--

._f--

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

1. DUTY FACTOR, 0"
..

:~

2. PER UNIT BASE' R,hJC' 3.'2 DEG. CIW.

-+- -

3. TJM' TC' POM Z'hJcl1l.

.0.5

10-2

.0

'0

'I. SQUARE WAVE PULSE DURATION (SECONDS)

Fig.6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source·Drain Diode Forward Voltage
1

5

l

•

kff
V

V
/

3

/
2

fO

J

TJ -55o

I

r-

V

"...::>

5

TJ - 25°C

'"
"z

1

L I""'"

z

:>

TJ! '25'!

/V

1

~

~

/V
Vas> jOlon) x ROSlon)

III

~

0

1

-I

I

I

I

..,

I-TJ" 150°C

dI

2

II

I

~rpulrETEsll

TJ" 25 0 C

1

0

1D
'0, DRAIN CURRENT (AMPERES)

Vso. SQURCE·TQ·DRAIN VOLTAGE (VOL IS)

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On·Resistance VI. Temperature
1

125

i

5

V

8

5

./

.,.

/

~

~

!o"'"

V,

" . +---

V
4

V

/

0

5V'

6

5

-40

TJ' 150''<-

5

.IV;

07 5

~

40

BO

120

1/

2
·40

'60

TJ, JUNCTION TEMPERATURE (OCI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

V

4·433

L
VGS -.OV

'r

2A

40
80
TJ. JUNCTION TEMPERATURE (DC)

110

PRINTED IN U.S.A

UFN620 UFN621

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
1000

20

I I
-w

600

',"1 M~'I
CiA"" Cgs + Cgd. Cds SHORTED
Cns • Cgd

u

z

;!

::"

400

;3

COlI = Cds + Cgs + Cgd

\ ...
\

"'='Cdl+Clld

-I-

-

~
~
w

VOS'100V

I-

~

u

~

10

'"
>,.

~

~

J

>

50

.......

VGS' 'OV

1.0

z
0

'~z"
~

.".

I

0.5

--

sr
12

-

J

r-.....

16

20

['..

r--....

"'"1"N620.
t'-....'

621

I- UFN6:;;;-" ........

I'-

, /I-- V -::- ......
V

FIG1URE Ii

Fig. 13 - Maximum Drain Current Vs. Case Temperature

w

z

10"SA

Qy. TOTAL GATE CHARGE (nC)

.........

u

~

~~

FOR TEST CIRCUIT ~

V

Crss

I
0

~~

/

w

~

1.5

"

~

0

Fig. 12 - Typical On·Resistance Vs. Drain Current

w
u

~

L4~

"

10
20
30
40
Vas, DRAIN TO·SOURCE VOLTAGE (VOLTS)

~

I

VOS' l6OV. UFN620. 622

0

t--.

~

I

>

I
C1SS

\ "' -- :5::

\

VOS; 40V

'5

"

\

u'

200

CgoCgd

l\

UFN623

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

JGS .J

800

UFN622

VGS' 20V

" ..\
.....

"~'\

I

ROS(on) MEASURED WITH CURRENT PULSE OF
2.01Js DURATION. INITIAL TJ" 250C. (HEATING
EFfECT OF 2.0 III PULSE IS MINIMAL.)

10
15
10. DRAIN CURRENT (AMPERES)

o

20

75
100
Te, CASE TEMPERATURE (OC)

50

25

125

150

Fig. 14 - Power Vs. Temperature Derating Curve
40

'\

5

"

I'...

'\

I

I\.

5

20

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

'\

,""i,\

40
60
80
100
Te. CASE TEMPERATURE (DC)

4-434

I 1\
120

140

PRINTED IN U.S.A

UFN620 UFN621

Fig. 15 - Clamped Inductive Test Circuit

UFN622 UFN623

..

Fig. 16 - Clamped Inductiv. Waveforms

VARY Ip TO OBTAIN
REQUIRED PEAK Il

vos·R

--- 10(on) 'x ROSlon) max,

r- -

81

II
I

.5 12

i

vas'" BV

r- !--

TJ

/I

z

~

TJ= 125°C

l-

10

~

Vas> 10(onl x ROS(on)

TJ

~
~

max.

=

ISOoC

"1

I
I I

80ps PULSE TEST

10

10

o

lD. DRAIN CURRENT (AMPERES)

Fig. 9 - Normalized On-Resistance Vs_ Temperature

Fig.8 - Breakdown Voltage Vs. Temperature

22

115

>

........ ......

~

~o 1.05

Ww
~N

~::l

.."

W ..

=>0

~

~~

u

z

........ ....

~

~
~~ 1.4

V

V

~~

g;;!

.... "
o~

... 0

z~

",

./

10

~

il;
40
80
120
TJ. JUNCTION TEMPERATURE (OCI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

06

./

V

V

VGS

./

0.2

160

V

/

/'

~

0.85

075
-40

~

1.8

z

........ V

~~

~~ 0.95

TJo j50 C

VSD, SOU RCE·ID-DRAIN VOLTAGE (VOL IS)

125

'"
~

i'TJ o 150 0 C

/'

-40

0

10V

loo3.5A

4D

80

120

TJ.JUNCTION TEMPERATURE (OC)

4-439

PRINTED IN U.S A

UFN630 UFN631

Fig. 10 - Typical Capacitance VI. Drain·to-Source Voltage

UFN632 UFN633

Fig. 11 - Typical Gate Charge Vs. Gate·to-Source Voltage

2000

20
VJs-O

.L

I.

I

800

U

400

-Cds+Cgd

I

l\

VOS =U!QV, UF~, 632

o.

>

A.

o

~

1/

"'" ~

"-

I

......

'0' 12A
FOR TEST CIRCUIT

SjE FIGrRE 1i

V

C'"

10
20
30
40
VDS. ORAIN·TO-SOURCE VOLTAGE (VOLTS)

16

OJ

32

40

Fig. 13 - Maximum Drain Currant VI. Cale Temperatura
10

I

........
.........
.........

vGS -IOV

S

'"
-UFN632~

................

--

24

f--

flg, TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On·Resiltance V,. Drain Current

2

Jl)
r

I~

,

'"~

c..

..........

vos' 100V

~ 10

~

\

Vos" 4QV

-r---

-

~

COII-Cd.+ gs+Cgd

~ 1200

~

.1

t-IMHz
Cia - CI!I~Cgd.Cd.SH~RTED _
CIII • Cgd

1600

V

-~

f--

-

.........UFN630, 631

,"
........

'"

1

vGs' 2 V

~

~

~

"I~

\

ROS(on) MEASURED WITH CURRENT PUJE OF

2.0 pi OURATION. INITIAL TJ" 250C. (HEATING
EFFECT OF 2.0., PULSE IS MINIMAL)
10
20
30
10, DRAIN CURRENT (AMPERES)

o

40

25

50

75
100
Tc, CASE TEMPERATURE ('C)

125

ISO

Fig. 14 - Power VI •.Temperature Derating Curve
80

70

~

r-- ~
"r\.

60

'\

!;(

iO
z

50

'\

0

~

~
'"

~

~

40

'"

30

20

~

10

20

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 - TELEX 95·1064

40
80
100
60
TC. CASE TEMPERATURE (OC)

4·440

"- '\
120

140

PRINTED IN U.S.A

UFN630

Fig. 15 - Clamped Inductive Test Circuit

UFN631

UFN632

UFN633

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBTAIN
REQUIRED PEAK IL

vGs·TvQ

~PL 'L+--->---"'''''''..-J

Fig. 17 - Switching Time Test Circuit

PRF;:.1 kHz
tp=lJ.!s

V,

V,

_ _'r'-~ TO SCOPE

r-----..,
I
z,
I
1511
I
I.n.
I
IL.:10V
_ _ _ _ -II

Zo

ISH

Fig. 18 - Gate Charge Test Circuit

r---o ~~g~ATED
SUPP,LY)
SAME TYPE
AS OUT

-

OUT

0~1.5mA

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-441

IG

'0

CURRENT
SHUNT

CURRENT
SHUNT

PRINTED IN U.S.A

UFN640
UFN641
UFN642
UFN643

POWER MOSFET TRANSISTORS
200 Volt, 0.2 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low RosI• n• and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDs

RDS(on)

ID

UFN640

200V

0.lS0

lSA

UFN641

150V

0.lS0

lSA

UFN642

200V

0.220

16A

UFN643

150V

0.220

16A

MECHANICAL SPECIFICATIONS
UFN640 UFN641 UFN642 UFN643
~.4210.1W

~ 9Miii18Oi

'086(O'4201~

TO-220AB

TERM4-

DRAIN

t~DlA
TERM 3 - SOURCE

11.5110.6501
14.2310.5601

+-

I~OOF'N
6lJ.5IIt
MAX

14.1310.5801

L

X

l

4.82tO.'~
.561.1
H-++-'

~

m:~:~: :::::ml

114(0.0451

ffilrn!I

1.1~

(0.010)

1.1 (O,MS)

,LSECTION

r

-;;110.,151
'Z.G4111.01Oi

0

x-x

1-----1

~.~;:~T~:

Dimensions in Millimeters and (lnchesl

4/S3

4-442

~UNITRDDE

UFN640 UFN641

UFN642

UFN643

ABSOLUTE MAXIMUM RATINGS
UFN640

UFN641

UFN642

UFN643

Units

200

150

200

150

V

200

150

200

150

V

Continuous Drain Current

lB

lB

16

16

A

10@TC = 100°C

Continuous Drain Current

11

11

10

10

A

10M

Pulsed Drain Current

72

72

64

64

A

VGS
PO@TC=25°C

Gate ~ Source Voltage
Max. Power Dissipation

ILM

Inductive Current, Clamped

Parameter

CD

VOS

Drain - Source Voltage

VOGR
10@TC-25°C

Drain - Gate Voltage IRGS = 1 MOl

CD

@

±20

linear Derating Factor

I

1.0

ISee Fig. 14)

ELECTRICAL CHARACTERISTICS @ Te

~

Parameter

V GSIlI1l Gate Threshold Voltage

100~H

64

I

A

64

-55 to 150'C

°C

30010.064 in. 11.6mm) from case for 105)

°C

Type

Min.

Typ.

Max.

Units

UFN640
UFN642

200

-

-

V

VGS = OV

UFN641
UFN643

150

-

--

V

10 =

ALL

2.0

4.0

V

-

-

500
-500

nA
nA

VGS - -20V

-

-

250

jJ.A

VOS = Max. Rating, VGS = OV
VOS = Max. Rating x O.B, VGS = OV, TC = 125°C

IGSS
IGSS

Gate·Source Leakage Forward

ALL

Gate·Source Leakage Reverse

ALL

lOSS

Zero Gate Voltage Dram Current

1010ni

On-State Drain Current ~

ROS lon ) Static Drain-Source On-State

®

®

ALL

-

-

1000

jJ.A

UFN640
UFN641

18

-

-

A

UFN642
UFN643

16

-

-

A

UFN640
UFN641
UFN642
UFN643

-

0.14

0.18

!l

-

0.20

0.22

!l

Test Conditions

250~A

VOS - VGS' 10 - 250~A
VGS = 20V

V OS ) 1010n) x ROSlon) max.' V GS = 10V

VGS = 10V, 10 = lOA

9fs

Forward Transconductance

ALL

6.0

10

-

SIOI

Ciss

Input Capacitance

ALL

-

1275

1600

pF

Coss

Output Capacitance

ALL

pF

C rss

Reverse Transfer Capacitance

ALL

tdlonl
tr

Turn-On Delay Time

ALL

Rise Time

ALL

tdlolli
tf

Turn-Off Delay Time

ALL

Fall Time

Og

°9.5

V OS ) 1010n) x ROSlon) max.' 10 - lOA
VGS = OV, VOS = 25V, f = 1.0 MHz

500

750

-

160

300

pF

16

30

ns

VOO = 75V, 10 = IDA, Zo ~ 4.70

27

60

ns

See Fig. 17

-

40

BO

ns

ALL

31

60

ns

(MOSFET switching times are essentially
independent of operating temperature.)

Total Gate Charge
IGate-Source Plus Gate-Drain)

ALL

-

43

60

nC

Gate-Source Charge

ALL

-

16

-

nC

ALL

-

27

-

nC

-

3.5

-

nH

Qgd

Gate-Orai~ I"Miller"l Charge

LO

Internal Drain Inductance

ALL

LS

W
WIK

25'C (Unless otherwise specified)

Drain· Source Breakdown Voltage

Resistance

I

72

Operating Junction and
Storage Temperature Range
Lead Temperature

8VOSS

ISee Fig. 14)

ISee Fig. 15 and 16) L -

72
TJ
T stg

V

125

Internal Source Inductance

ALL

~

See Fig. 10

V GS z 10V, 10 z 22A, VOS z 0.8 Max. Rating.
See Fig. 1B for test circuit. IGate charge is essentially
independent of operating temperature.)

Measured from the
contact screw on tab
to center of die.

-

4.5

-

nH

Measured from the
drain lead, 6mm 10.25
in.l from package to
center of die.

-

7.5

-

nH

Measured from the
source lead, 6mm

10.25 In.1 from
package to source
bonding pad.

Modified MOSFET
symbol showing the
internal device
inductances.

$

THERMAL RESISTANCE
RthJC

JunctlOn-to~Case

RthCS

Case-to-Sink

Mounting surface flat, smooth, and greased.

RthJA

Junction-to-Amblent

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL, (617) 861-6540
TWX 1710) 326-6509 • TELEX 95-1064

4-443

PRINTED IN USA.

•

UFN640

UFN641

UFN642

UFN643

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
(Body Diode)

IS

ISM

VSD

Pulse Source Current
IBody Diode) @

Diode Forward Voltage ®

UFN640
UFN641

-

-

18

A

UFN642
UFN643

-

-

16

A

UFN640
UFN641
UFN642
UFN643

-

-

72

A

-

-

64

A

UFN640
UFN641

-

-

2.0

V

UFN642
UFN643

-

-

1.9

V

-

ns

trr

Reverse Recovery Time

ALL

ORR

Reverse Recovered Charge

ALL

ton

Forward Turn-on Time

ALL

 IDlon) II( RDS(on) m.~.

,

.,
I'

J

~
10
VDS. DRAIN·TD·SOURCE VOLTAGE (VOLTS)

10
VGs. GATHO·SDURCE VOLTAGE (VOLTS)

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
100

40

r--- J~. ruLE TEJT

l~~

32

~?
~

~~

fP _Jv."

~~

~ ",.

~

Op RATI N IN HI

~~6401

vGS"f V-

~ V'

~

~

~
....

10;~
lips

,;

~ 1~:

I

10ms

z

~

"E>

lOOms

1.0

f= TC' 25'C
0.5

~ TJ' 150'C MAX

-

rDEr

I- RthJC • 1.0 KIW

JvJv_

0.2 f-ISI~GLf pmEI
0.1
1.0

1
2
3
4
VDS, DRAIN·TO·SDURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-

UFN642,3

10

L!~ITEO

Byt'ton)

\

UFN640,l

20

AREA IS

"'.

50 I-UFN642.3

I

U

II

1,3

U~,2

I IIIII
10

20

50

100

III
200

500

VOS. DRAIN·TO·SOURCE VOLTAGE (VOLTS)

4-444

PRINTED IN U.S.A.

UFN640

UFN641

UFN642

UFN643

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

I

•

0-0.5
NOT£S.

rO.2

3nSL

-~

1- 0.1

~2~

B·05
rO.02
.-0.01

SINGLE PULSE (TRANSIENT

I-1"'T

THERMAlIMPEOANCE)

:~

1. DUTY fACTOR, 0"

2 PER UNIT BASE'" RthJ&" 1.0 DEG C/W
3 TJM-TC"POMZthJC(t).

10-3

10-2

10-1

10

1.0

fl. saUARE WAVE PULSE DURATION (SECONDS)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current
190

152

TJ

z

=

;'

A~

q

-55°C

w

ill

./V

iii
U

11.4

L L
'/

z

'"

i
~

~
£

76

38

T\ - 25le

~

LJc-

5

f-- -TJ-150'C

r

Tj

= 25 0 C

2

Vas> 'o(on) x ROS(on) max.

I

10

16
24
32
'0. DRAIN CURRENT (AMPERES)

40

Fig. 8 - Breakdown Voltage Vs. Temperature

o

J

0.4
08
1.2
1.6
VSD. SOURCE·TO DRAIN VOLTAGE IVOl TSI

2.0

Fig. 9 - Normalized On-Resistance V,. Temperature
25

12 5
w

w

~

I
I

1

8~., PU~SE TE~T

III

III

0

-

1

iJ [L'

......

50

I
I

U

Z

>

".
5

~

,. ~

1.1 5

.;'"

. /V

/'

"'

~o 1.5
zw
eN
w:O

U,"

... V

....... ,,/

"':0
=>",

ee

~~ 1.0

V

:;

~

5

0.7 5
-40

,/

2.0

~w

-

J
40

80

120

l/

....... /
VGS - IOV

'r

0.5

o-40

160

40

9A

I

80

120

160

TJ, JUNCTION TEMPERATURE (OC)

TJ,JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

V

V

4-445

PRINTED IN U.S.A

UFN640

c:...

C~ + c~. Cd.S~ORTE6
t- r-JGS.ot- -Cra'C,d

\

1600

\

800

\

u'

400

~

\,.

."

-

""'Cds+Cgd

5

~

VOS=40V~

I

I "'Vbs • l6OV. UFN640. 642 .........

~
.......

~

~

~

SEEFIGiRE18I

20

20

..........
6 ........

0.4

r--.....

I""--.

~

..........

2

3

~

1'-..["--.

V S=10V

~

=>
o

:;;
~

go. 1

~

}

o.2

.... /

-

---

60

"" ~'\

,

-

80

0
25

100

I--

~

4

EFFECT OF 2.0 ~s PULSE IS MINIMAL)
~

~

.....

8

~;'20V

ROSI,"I MEASURED WITH CURRENTlpUlSJ OF
2 [] ~s OURATION. INITIAL TJ = 25°C. (HEATING f-20

UFN640.641

""~,
UFN642. 643 ,~

w
u

6

80

60

Fig. 13 - Maximum Drain Current Vs. Case Temperature

z

~

40

-

D. g, TOTAL GATE CHARGE (nC)

o.5

z
o

-

10 = 22A

W

%

~

#
FOR TEST CIRCUIT

V

Fig. 12 - Typical On·Resistance Vs. Drain Current

u

'#

L

-

cl
-....
w

'-..,

/

~

VOS. ORAIN·TO·SOURCE VOLT AGE IVOL TSI

I

I

Vas'" lODV

1----- I

........ ~
w

UFN643

20

r- -.!:'"

\
~

CgsC,d
C.... Cds+Cgs+C"

-

~ i'oo..

~1200
~

~

f= 1 MHz

UFN642

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
2000

UFN641

75

50

100

125

150

Te. CASE TEMPERATURE (uG)

to, DRAIN CURRENT (AMPERES)

Fig. 14 - Power Vs. Temperature Derating Curve
140
120

-

I"\..

'"

I'\.

"

0

\..

0

'"

r'\..

0
0

'""

"\..
"

~

20

40

60

80

100

120

140

TC. CASE TEMPERATURE I'CI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·446

PRINTED IN U.S A

UFN640 UFN641

Fig. 15 - Clamped Inductive Test Circuit

UFN642 UFN643

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBTAIN

R

REQU'RED PEAK 'L

YGS '

~D~UT~-.rc::J/f'
'L_---./o---...._I.-.J

Fig. 17 - Switching Time Test Circuit
15V
ADJUST Rl TO OBTAIN
SPECIFIED 10

aID
VDS

r;U~ -

- -o_lr--__-<>-_--'~~

I GENERATOR
Jl I
I :J~RCE
L'MPEDANCE
___ J

Fig. 18 - Gate Charge Test Circuit
+VDS
!ISOLATED
SUPPLYI

s=TI.

o

-

5 mA

--'\./V'\"---.-'VV\,--o -VDS
'G
'D
CURRENT
SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

4-447

~

CURRENT
SHUNT

PRINTED IN U S.A

UFN710
UFN711
UFN712
UFN713

POWER MOS"FET TRANSISTORS
400 Volt, 3.6 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon> and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFN710

400V

3.60

1.5A

UFN711

350V

3.60

1.5A

UFN712

400V

5.00

1.3A

UFN713

350V

5.00

l.3A

MECHANICAL SPECIFICATIONS
UFN710 UFN711

UFN712 UFN713

TO-220AB

TERM3-S0URCE

'·4.82(O.'~J
356 (0 140J

~
~(O"51

'-+-+-+---'

l~:::: !:l::~

~ECTlONX-X

~;~:~~:

0

ti----l

~~~:~g-~:

2.D4(0 D8Di

Dimensions in Millimeters and (Inches)

4/83

4-448

~UNITRDDE

UFN710 UFN711

UFN712 UFN713

ABSOLUTE MAXIMUM RATINGS
UFN710

UFN711

UFN712

UFN713

400

350

400

350

V

Drain - Gate Voltage IRGS ~ 1 Mil) (j)

400

350

400

350

V

Continuous Drain Current

1.5

1.5

1.3

1.3

A

lo@ TC ~ 100°C Continuous Drain Current

1.0

1.0

O.S

O.S

A

6.0

6.0

5.0

5.0

Parameter

VoS

Drain - Source Voltage

VoGR
10@TC~25°C

@

10M

Pulsed Drain Current

VGS
Po@ TC

Gate - Source Voltage
~

25°C

~I0t'-(o_n'-)'t-R_o_SI,-!,n.:.)_m'_'t-'-+f---JI---+-+--I

VGS'6V

0.88

z

~

0,66

0.88 1---+-+-~--+---h""+--1I---+-+--I
/

5v

0.44
0.22
U

0

20

60

40

0.44

--

4~
80

1---+-+---t-+-ct-fjJFV--:;I-L',,--IT'tJ"_-_55..,'C_-+--I

/J

o~~~~L~~~~~~~~
o

JOO

10

VGS. GATE·TO·SOURCE VOLTAGE NOlTS)

Fig, 3 - Typical Saturation Characteristics

..

1,32

~

1.10

z

0.88

~

0.66

::!

~

,

z

w

;;:

/

,-r7V

~~
~

r

0.22

~~V
8V

/
o

r- ~F~71~, j

.... VGS·6v -

l

*

i
~

I

, --

z

~

,
5V

"

OPERATION IN THIS
AREA IS LIMITED
BY, ROSI,n)

-T C'250C
=TJ "150'C MAX,
- R,hJC " 6.4 K/W

0.02 :-:f'~GLr TI~E,
0.01

10

4-450

U
lr~'S

'11'
lh~s

III

O. 1

_0 0.05

VOS, ORAIN·TO,SOURCE VOLTAGE IVOL TS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

0.5

'"

1'.1' I',

1.0 C: UFN712, 3

:: 0.2

.tv

o

10/-1$

I- UFN712, 3

~

J

0.44

I=UFN710,1

p-

10V.w

I-- r-aLSPUL'SETEJ

1.76
1.54

Fig. 4 - Maximum Safe Operating Area
10

2.20

~

~

0221--+--+---+-~~~-+--+--1-+--I

Vos. tlRA1N·TO-SOURCE VOLTAGE IVOlTS)

1.98

TJ" 125°C

Eo 0.661--+--+---+-+----.H-lri/-:T.J:' 25 0 C-r--

lDDms

,

UFN711,3
IIIII
UFN710,2

Jic'

II

III
1.0

10
20
50 100 200
VOS' ORAIN,TO-SOURCE VOLTAGE (VOLTS)

500

PRINTED IN U.S.A.

UFN710

UFN711

UFN712

UFN713

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

I
I

..

0·0.5
NOTES-

~

0.2

~~,

lT1S1..

IiiIIII"

!:::iiI

~2~

FO.05

BJ

I.

0.01

.A

~UTY FACTOR. O'

:;

2. PER UNIT BASE" RthJC • 6.' OEG. CIW.

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE}

3. TJM - TC" POM ZthJc(t} .

10-3

10-4

10-1

10-2

10

1.0

t1. SQUARE WAVE PULSE OURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

Fig. 7 - Typical Source-Drein Diode Forward Voltage

°
°

3.0
2.7

-.j",.ui"TE!r

Vas> tOl on) It ROS(on) milt.

_ 2.4

~
!

I

...... ~ !-/V
i-"'" _I"'"'
/ '/
V
~

1.5

--- --

.... 1.2

li1
~ 0.9

i

"

2. I

iii
~ 1.8

IR

III

0.6
3

TJ" -55 0 C

Q

TJ ,.15 0 C- r -

°

TJ'

~250C f - -

5
f--

111
If

°o

0.22

V
IY

2f--

044 0.66

0.88

11

132

1.54

116

198

O. I

22

1.0

Fig. 8 - Breakdown Voltage Vs. Temperature

1.08

~

1.07

.~

1.05

/

~a 1.03

~~ 0.99
~

V

09 7

2/

9

V

V

/

1.0 I

=>'"

0.9

J

6

/

Ww
~~

0.94

lL

2.04

/

0.9 5

5.0

40

Fig. 9 - Normalized On-Resistance VI. Tampareture

./

>

~;

3.0

2.2 I

°

~

2.0

Vso. SOURCE-TO-ORAIN VOLTAGE (VOLTSI

10, DRAIN CURRENT (AMPERES)

1.1

TJ: 1500 e
I
TJ"i5OC

/

V

7

/

V
2

V

-55 -34.5

L

0.65
0.47
-I.

6.5

27

47.5

6B

BB.5

109

129.5 ISO

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

L
-55 -34.5

TJ,JUNCTION TEMPERATURE (OCI

VGS"OV
to "'O.6A

V

'"
-14

6.5

27

47.5

6B

88.5

109

129.5 ISO

TJ. JUNCTION TEMPERATURE (OCI

4-451

PRINTED IN U.S.A

UFN710

UFN711

UFN712

UFN713

Fig. 11 - Typical Gate Charge Vs. Gate·to·Source Voltage

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage

0

Vas Jsov

5

~~

VOS = 200V

I

I

VOS' 320V
0

II

J

10 ·2A
FOR TEST CIRCUIT f--Si E FIGr E Ii

II
20

40

30

~~

A~

5

10

..........

50

4

6

10

0,. TOTAL GATE CHARGE InCI

Vas. DRAIN-lO-SOURCE VOLTAGE (VOLTS)

Fig. 13 - Maximum Drain Current V•. Case Temperature

Fig. 12 - Typical On·Resistance Vs. Drain Current

2.0

10

v.,
t

VGs=ILI

ROSI": MEASUJEO WITH

CURREN~

1

PULSE OF 2.0,us ~URATION.

INITIAL TJ =25°C. (HEAT1NG

EFFECT OF 2.0., PULSE

'f

MINIMAL.!

_

6

r--.....
2r--.....

VGS"20V_

II
V

3

-

V

o

f----

. . . . r-.....

t'--.... . . . . .UFN710. 711
..... 1'-...

UFN712. 713

r--...~

"-

B

/

./

""'"

0.4

~

~

'\

1

o

25

'0. DRAIN CURRENT IAMPERES)

50

75

100

125

150

TC. CASE TEMPERATURE lOCI

Fig. 14 - Power Vs. Temperature Derating Curve
20

"

~

I\.

\

\.

'\

o

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

o

20

"'"

80
100
60
40
TC. CASE TEMPERATURE lOCI

4·452

120

r\
140

PRINTED IN U.S A

UFN710 UFN711

Fig. 15 - Clamped Inductive Test Circuit

UFN712 UFN713

Fig. 16 - Clamped Inductive Waveforms

•

VARY Ip TO OBTAIN
REQUIRED PEAK Il

Tn

VGs=ij-tpL

OUT

--<>---4......w.---'

' l ....

Fig. 17 - Switching Time Test Circuit

v,
PULSE
GENERATOR

r-----.,
I

I
I
L _

50!!

I

I

_ _ _ ...J

-'''----TOSCOPE
10 I 00lu

Son

t

HIGH FREQUENCY
SHUNT

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPl Y)

-

oI=tI:·5mA

...,--"I.IV'Ir.....-'VV\r--o -Vos
IG
CURRENT
SHUNT

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173· TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4-453

"':"'

10
CURRENT
SHUNT

PRINTED IN U.S A

UFN720
UFN721
UFN722
UFN723

POWER MOSFET TRANSISTORS
400 Volt, 1.8 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design aChieves a very low Roslonl and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high·power switching
applications such as switching power supplies, motor controls, and wide·band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFN720
UFN721
UFN722
UFN723

400V
350V
400V
350V

1.80
1.80
2.50
2.50

3.0A
3.0A
2.5A
2.5A

MECHANICAL SPECIFICATIONS
UFN720 UFN721 UFN722 UFN723

TO·220AB

TERM4-

DRAIN

T!:~.:~-D~o:,:
..

TUM 1- GATE

:n~

l

~

'1m2;
4. .1

..t...SECTIOIIX-X
1.14((1.G411

o:ma:mJ

r

--I
2.12ID.115)

rI

j::::;j

!:::m;;:

2lI'IU.OJ

Dimensions in Millimeters and (Inches)

4/83

4·454

~UNITRODE

UFN720

UFN721

UFN722

UFN723

ABSOLUTE MAXIMUM RATINGS
UFN720

UFN721

UFN722

UFN723

Units

400

3S0

400

3S0

V

400

3S0

400

3S0

V

Continuous Drain Current

3.0

3.0

2.5

2.5

A

10@TC - 100·C Continuous Drain Current
Pulsed Drain Current @
10M

2.0

2.0

l.S

1.5

A

12

12

10

10

Parameter
VOS

Drain - Source Voltage (j)

VOGR
10@TC

Drain - Gate Voltage IRGS

= 2S·C

VGS
PO@TC- 2S·C

= 1 Mill (j)

Gate - Source Voltage
Max. Power Dissipation
Linear Derating Factor
Inductive Current, Clamped

ILM

40

ISee Fig. 14)

W

0.32

ISee Fig. 14)

W/K

Operating Junction and
Storage Temperature Range
Lead Temperature

V

ISee Fig. 15 and 16) L
12
I

I

12
TJ
T stg

A

±20

= IOOI'H
10

I

A

10

-55 to 150

·C

30010.063 in. 11.6mm) from cas. for lOs)

·C

ELECTRICAL CHARACTERISTICS @ TC = 2S·C (Unless otherwise specified)
Type

Min.

Typ.

Max.

Units

UFN720
UFN722

400

-

-

V

VGS

UFN721
UFN723

350

-

-

V

10

V GSlth) Gate Threshold Voltage
Gate-Source Leakage Forward
IGSS

ALL

2.0

4.0

V

VOS

ALL

-

nA

ALL

-

SOO
-500

nA

VGS

250

VOS - Max. Rating, VGS - OV

Parameter

BVOSS Drain - Source Breakdown Voltage

IGSS

Gate-Source Leakage Reverse

lOSS

Zero Gate Voltage Drain Current

1010n)

On-State Drain Current

®

ROSlon) Static Drain-Source On-State
Resistance

®

-

-

1000

"A
I'A

UFN720
UFN721

3.0

-

-

A

UFN722
UFN723

2.5

-

-

A

UFN720
UFN721

-

1.5

1.8

!l

UFN722
UFN723

-

1.8

2.5

!l

ALL

-

Test Conditions

= OV

= 2S0l'A
= VGS, 10 =

250,.A

VGS - 20V

VOS

= -20V
= Max. Rating x 0.8, VGS = OV, T C = 12S·C

V OS ) 1010n) x ROSlon) max.' V GS

VGS

= 10V

= 10V, 10 = 1.5A

gls

Forward Transconductance (2)

ALL

1.0

2.0

-

S (0)

Ciss

Input Capacitance

ALL

450

600

pF

Coss

Output Capacitance

ALL

-

100

200

pF

Crs•

Reverse Transfer Capacitance

ALL

-

20

40

pF

tdlonl
tr

Turn-On Delay Time

ALL

-

20

40

ns

Rise Time

ALL

25

ns

SO

50
100

ns

IMOSFET switching times are essentially

25

50

ns

independent of operating temperature.)

12

15

nC

tdloffl
tf
Qg

Turn-Off Delay Time

ALL

Fall Time

ALL

-

Total Gate Charge
IGate-Source Plus Gate-Drain)

ALL

-

Qgs

Gate-Source Charge

ALL

-

6.0

-

nC

Qgd

Gate-Drain I"Miller") Charge

ALL

-

6.0

-

nC

LO

Internal Drain Inductance

-

3.5

-

nH

ALL

-

4.5

-

nH

VOS ) 1010n) x ROSlon) max.' 10 - I.SA
VGS = OV, VOS = 25V, f

VOO = 0.5 BVOSS,I O = I.SA, Zo - 500
See Fig. 17

V GS = 10V,I 0 = 4.0A, VOS - 0.8 Max. Rating.
See Fig. 18 for test circuit.IGate charge is essentially
independent of operating temperature.)

Measured from the
contact screw on tab
to center of die.

Internal Source Inauctance

ALL

-

7.S

-

Modified MOSFET
symbol showing the
internal device
inductances.

Measured from the

drain lead, 6mm 10.25
in.) from package to
center of die.

LS

= 1.0 MHz

See Fig. 10

nH

Measured from the
source lead, 6mm

10.25 in.) from
package to source

bonding pad.

$

THERMAL RESISTANCE
Junction-to-Case

Case-to-Sink

Mounting surface flat, smooth. and greased.

Junction-to-Ambient

Free Air Operation

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-455

PRINTED IN U.S.A.

•

UFN720

UFN721

UFN722

UFN723

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
(Body Diodel

IS

ISM

VSD

Pulse Source Current
(Body Diodel@

UFN720
UFN721

-

-

3.0

A

UFN722
UFN723

-

-

2.5

A

UFN720
UFN721

Diode Forward Voltage

®

Modified MOSFET symbol
showing the integral
reverse P·N junction rectifier.

~

-

12

A

UFN722
UFN723

-

-

10

A

UFN720
UFN721

-

-

1.6

V

TC

= 25°C, IS = 3.0A, VGS = OV

UFN722
UFN723

-

-

1.5

V

TC

= 25°C,IS = 2.5A, VGS = OV

ALL

450

-

ns

T J - 150°C, IF - 3.0A, dlF/dt - 100A/~s

3.1

-

~C

TJ

t"
ORR

Reverse Recovery Time
Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

IntrinsIc turn-on time is negligible. Turn-on speed is substantially controlled by LS

(j) T J

= 25'C to 150°C.

® Pulse Test: Pulse width" 300"s, Duty Cycle" 2%.

= 150'C, IF

- 3.0A, dlF/dt

= 100 A/"s
+ LO'

@ Repetitive Rating: Pulse width limited
by m'ax. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).

Fig, 1 - Typical Output Characteristics
'OV

B.OY

Fig. 2 - Typical Transfer Characteristics

"J'PU+TEJ,- f- f-

5

-

5.L
I
I

III

BoJIPULJETEslr

I
I
I
I
I
I
Ves > 10(on) x ROS(on) max.

r11

~rI

IJ

U

VGs=sbv

A
III

I

I

2

1

TJ" 125°C

4.5V

T,! ,,01

I

TJ = ·55 QC
1

'r

I'---. /I

rl

[)I;t

J....o': ~V

.

300

100
200
Vas. DRAIN·TO-SOURCE VOLTAGE IVOLTS)

'"

,

VGS, GATE TO·SOURCE VOLTAGE (VOLTS)

Fig, 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area
50

')~(
~!.5V- I-"

I~
J

1/

I

£

•

r'-

80 liS PULSE TEST

r-

,,,

UFN720,l

1.0

,

10p.s

:',

1'.

"

I

100l-ls

III

~

• m.
0.5

E>

I

0.2

'" lOti

TC "' 25°C
TJ" 150 0CMAX.

UFN72t,3~

R.hJC· 3.'2 KIW
0.'
ov
12

16

00.5
1.0

20

Vas. ORAIN·TO·SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861·6540
TWX (710) 3~6·6509 • TELEX 95-1064

i

UFN722,3

AREA IS LIMITED
BY ROSlonl

z

·j.5V

'l

i..

UFN722,3

5

I

V-

r-

UFNnO,l
10

VG,·I·ov

J

OPERATION IN THIS

1

20

S~~EPUL'E

UFN720,2
'0

20

50

'00

200

n:

ltO, s,

II
DC

500

VOS, ORAIN·TO-SOURCE VOLTAGE IVOLTSI

4·456

PRINTED IN USA

UFN720

UFN721

UFN722

UFN723

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

I
1
0" 05

•

NOTES

m.JL

-01
-01

~1~

~

=005
-001

:~

1 DUTY FACTOR, 0"

~

SINGLE PULSE (TRANSIENT

iHIEIRI~Al'~P~OAN,CE: I

2 PER UNIT BASE'" RthJC = 3.12 DEG.

-

etw.

3 TJM-TC=POMZthJC(t)

10-3

10-1

1.0

10

'1, SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Transconductance Vs. Drain Current

-

1

801$PUL~ETElT

I

v~s > Ilo(on)l)( R~S(onll rna}

TJ '" 25DC

'~

~

--tTJ :25 0C

:::::

~

~

..-

.-.- f- 1) 1251c- r-......- p ~ =
/'

.,,V. V

-

TJ=-55 DC-

~-

f-- --

-

i+
-t- 1---r-

5
-TJ= 150°C

-1-

'fi/

2

I

-10

TJ =25 0 C

/
o

1

10. DRAIN CURRENT IAMPERES)

VSQ. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Fig. 9 - Normalized On-Resistance Vs. Temperature

Fig.8 - Breakdown Voltage V•. Temperature

22

115

5

...... .".,

5

/

,
/

..; ..".

..".

/

..".

/
j

5

V

06

/'"
40
80
110
TJ. JUNCTION TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

/

/

5""

07 5
-40

TJ;,500 C_

'#

---l-

".

160

4-457

/
vGs= IOV

101"5A 1

02
-40

40
80
TJ, JUNCTION TEMPERATU AE (DC)

I---

120

PRINTED IN USA

UFN720 UFN721

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
1000

UFN722 UFN723

Fig. 11 - Typical Gate Charge Vs. Gate-to.source Voltage

V~S'OI

20

i
l
.L
Cia" ell + C~, Cds SHORTED
f· f MH,

800

-

~

600

;:"

c'" • Cgd

1\
~\

·2

;t
~ 4110
U

200

\
\\
\

~

\

~Cdl+Cgd

-

~.

-

CQII"'Cds+ fJI+Cgd

\ I'....

G

r--

I

~

w

"'"

~

fO

A~

~

~

0

"~

I'--rr-

I

FOR TEST CIRCUIT
jEE FljURE f 8

EFFECT OF 2.0., PULSE IS MINIMAL)

B

12

0". TOTAL GATE CHARGE InC)

16

20

Fig. 13 - Maximum Drain Current VI. Case Temperature

i

VGS"ovp.,
VGS' 20V

V

~

3

i

2

z

~

.......

r- rl- t--

-

...... :----.

UFN720. 721 _

.............. t::--- . . . .
UFN722. 723

E

~

o

12

f--

......;:: ~

1

fO

f-

l

50

/
f/

ROS(on) MEASURED WITH CURRENT PULSE OF

2.0IlsDURATION. INITIAL TJ=250 C (HEATING

-

fO"4A

V

Cr..

Fig. 12 - Typical On-Resistance Vs. Drain Current

-I--'

II

5

>

co..

~

Ir~

w

lil

~OOV ""-- ~

VOS' 32DV

0

>

10
20
30
40
VOS. ORAfN·TO·SOURCE VOLTAGE (VOLTS)

1

VOS'

~

CISS

t-.

VOS180V

15

~

25

50

'D. DRAIN CURRENT (AMPERESj

100
75
Te. CASE TEMPERATURE (OCI

125

150

Fig. 14 - Power Vs. Temperature Derating Curve
40
35

~

'\

'"

30

z

25

~

20

0

ili

is

'"

~

~

15

\.
'\.
'\

'\
1'\

10

[\
20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

40
60
80
100
TC. CASE TEMPERATURE 1°C)

4-458

120

140

PRINTED IN U.S.A

UFN720 UFN721

UFN722 UFN723

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit
VARY tp TO OBTAIN
flEDUIREDPEAK Il

VGS·R
Fig. 17 - Switching Time Test Circuit
ADJUST RL
TO OBTAIN
SPECIFIED 10
V,

El
Rl

PULSE
GENERATOR
r------,

I

I
I

L_

50u

I

I

_ _ _ ...I

TO SCOPE
50n

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

o~·5mA

--'\J'V',~""-'V'''''~-O

IG
CURRENT

SHUNT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

4·459

-=-

-VOS

10
CURRENT
SHUNT

PRINTED IN U.S.A

UFN730
UFN731
UFN732
UFN733

POWER MOSFET TRANSISTORS
400 Volt, 1.0 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Ros.on. and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFN730
UFN731
UFN732
UFN733

400V
350V
400V
350V

LOn
Lon
L5n
1.5n

5.5A
5.5A
4.5A
4.5A

MECHANICAL SPECIFICATIONS
UFN730 UFN731

UFN732 UFN733

TO-220AB

Dimensions in Millimeters and IInchesl

4/83

4-460

~UNITRODE

UFN730 UFN731

UFN732

UFN733

ABSOLUTE MAXIMUM RATINGS
UFN730

UFN731

UFN732

UFN733

Units

400

350

400

350

V

400

350

400

350

V

Continuous Drain Current

5.5

5.5

4.5

4.5

A

10@TC = 100°C

Continuous Drain Current

3.5

3.5

3.0

3.0

A

10M

Pulsed Orain Current @

22

22

18

18

VGS
PO@TC = 25°C

Gate - Source Voltage

Parameter

 IOlon) x ROSlon)

TJ • 15'f""'-

I
I

50

80l'slpULSE

= F=

1'1

= 1=

.Lb

300

250

Vas, DRAIN·Ta·SOURCE VOL rAGE (VOL lS)

VGS. GATE·TO·SOURCE VOLTAGE (VOLTS)

Fig. 3 - Tvpical Saturation. Characteristics

Fig. 4 - Maximum Safe Operating Area
100

5

,I, 1

8O,.,sPUlSE TEST

,

J/ r--

,.

...JFN730, 1
1

r-Vos·5.0V- r--

0

:;:.;;;.~

~Frr32i 3

0

J

If
IV'

1

PERATION IN THIS
AREA IS LIMITED
BY RaSlon)

0
10v,Jfv

1(/

3

1

J

,

UF.Ii130,1
10IJS

5

UFN732,3
4.5V-

'M]'

I, L,1

r-

11~.l

vl I I
f=Tc ~'15'C
5 f:::T J ' 150'C MAX.

/

f---RthJC" 1 67 KIW

4.0V- I--

O.

If

O. 1

10

10

Ves. DRAIN·TO SOURCE VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

'H'1GlfWfl

UFN731. 3....,
\\11

\

UFN730,2

II II1III
10

20

50

100

-

100

'm

ri~1t
III

500

VOS' DRAIN·TO·SOURCE VOLTAGE (VOLTS)

4·462

PRINTED IN USA

UFN730

UFN731

UFN732 UFN733

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

...z
w

111

:L

~ 111~llllillllllllllllllll!IIII!!~~!:!;i~~=~l

wz
~;

~~

0.5 -0.2

~:i 0.2

i!

Nm.JL:TES:

0"0.5

0.1

OM

~

U

NO

~Z~

0.05

.... 0.05
1.0 ~O.Ol
~ffi
SINGLE PUlse (TRANSIENT
!_!'
w

~

Vos > 10(onl x ROS(onl

~

ma~.

I'TJ'150 0 C

/"

w

TJ = 25°C

-

II'

""...

TJ=-55 0 C -

I
1I
I

80jJsPULSETEST

10
10

o

10, DRAIN CURRENT (AMPERES)

TJ

'1

5Oc

Vso. SOURCE-lO-DRAIN VOLTAGE (VOLTSI

Fig. 9 - Normalized On-Resistance V,. Temperature

Fig. 8 - Breakdown Voltage Vs. Temperature
lZ5

11
w
u

V
"..

~

V

z

........ ~

~

i-""'"

18

/

~

/

z

oa-

V

ww

~~

L ~

'4
/

,,~

~~

/

... 0

z~ 10

~

0

]

~
075
·40

V

06

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

160

VGS' !(lV

'°1" "AI

/""
02

40
80
lZ0
TJ. JUNCTION TEMPE RATURE lOCI

/..

·40

o

40

80

110

TJ , JUNCTION TEMPERATURE tOC)

4-463

PRINTED IN U.S A

•

UFN730 UFN731

Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage

UFN732 UFN733

Fig. 11 - Typical Gate Charge VI. Gate-to-Source Voltage
20

1000

}

~GS .J

l

1'1 MH,

.1

1600

~

1200

Vos = 32/N. UM30. h2 "-

c--'

r-

"'Cds + Cgd,

~

0

;!

§ 80 o~

CIS5

o~
r-

,

~

I"- ,..A

\

40

~

~~

U

U

abv"

vos = 200V"

f-

C.-Cd,+ gs+Ctd

~

vlOS=

Cill • c. + Cgd. Cd. SHORTED
fC", • Cgd

5

J

~
10

/

10' IA
FOR TEST CIRCUIT

II
20

30

40

F

IS

50

Vos. DRAIN TO SOURC[ VOLTAGE (VOL lSI

QQ.

Fig. 12 - Typical On·Resistance Vs. Drain Current

r rl

r-

E

24

40

32

TOTAL GATE CHARGE (nCl

Fig. 13 - Maximum Drain Current Vs. Ca.. Temperatura
10

3

VGS.'0'!/.

)
1

-

V

'/VGs=20V_

rr- t-~

V

r- 1'--

UFN732. 733

2

r- r-

UFN730. 731

r-t"-~~

........."'"

r"" ~

"" ~

RDSI"I MEASURED WITH CURRENT PULSE OF
2.0psDURATION. INITIAL TJ"'25 0 C. (HEATING

'I

EFFECT OF 2.0", PULSE IS MINIMAL.l
10
15
20
10. DRAIN CURRENT (AMPERESI

0

25

25

30

50

15
100
Tc. CASE TEMPERATURE (OCI

125

150

Fig. 14 - Power Vs. Temperature Derating Curve
0

I-0

~

"\

r'\

0

"\

'\
0

'\

0

0

I'\.
I'\.

0

'\
20

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

40

80
100
60
Te. CASE TEMPERATURE IDC)

4-464

120

140

PRINTED IN U S.A

UFN730 UFN731

UFN732 UFN733

•

Fig. 16 - Clamped Inductive Waveforms

Fig. 15 - Clamped Inductive Test Circuit

VARY Ip TO OST AtN
REQUtREOPEAK IL

vos·R

, O!iBVoss

o75BVOSS

Fig. 17 - Switching Time Test Circuit

Vo
_.:r--~ TO SCOPE

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED
SUPPLY)

-

o~5mA

-""'I\I'\~""'-'Vv\~-O
IG
10
CURRENT
CURRENT
SHUNT

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-,1064

4-465

-v OS

SHUNT

PRINTED IN USA

UFN740
UFN741
UFN742
UFN743

POWER MOSFET TRANSISTORS
400 Volt, 0.55 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low Roslon > and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high·speed, high·power switching
applications such as switching power supplies, motor controls, and wide·band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

UFN740

400V

0.550

lOA

UFN741

350V

0.550

lOA

UFN742

400V

0.800

8.0A

UFN743

350V

0.800

8.0A

MECHANICAL SPECIFICATIONS
UFN740 UFN741

1""(o.'20>~
Hi 10.1:1 ~T8i1Ol8Ol

UFN742 UFN743

TO·220AB

TERM4-

DRAIN

t~OIA

r-8j

TERM 3 - SOURCE

18.S~!;=

}

'~O·FIN.

T

us 10.2501

•

AX

-.l.

14.73 (0.580)

"L
~

It ~
-=-

117(0.010)
115!O.IMS)

Dimensions in Millimeters and (Inches)

4/83

4·466

~UNITRDDE

UFN740 UFN741

UFN742 UFN743

ABSOLUTE MAXIMUM RATINGS
UFN740

UFN741

UFN742

UFN743

Units

400

350

400

350

V

400

350

400

350

V

Continuous Drain Current

10

10

8.0

8.0

A

10@TC - 100·C

Continuous Drain Current

6.0

6.0

5.0

5.0

A

10M

Pulsed Orain Current

40

40

32

32

A

VGS
PO@TC=25°C

Max. Power Dissipation

Parameter

VOS

Drain - Source Voltage Q)

VOGR
10@TC = 25°C

Orain - Gate Voltage IRGS - 1 Mil)

'OloIT) x ROSlon) max.' VGS = 10V

VGS = 10V. 10 = 5.0A

gfs

Forward Transconductance (2)

ALL

4.0

7.0

-

SUlI

Cjss

Input Capacitance

ALL

-

1250

1600

pF

Cos.

Output Capacitance

ALL

-

300

450

pF

VOS

>10(on) x ROSlon) max.' 10 - 5.0A

VGS = OV. VOS = 25V. f = 1.0 MHz
See Fig. 10

Crss

Reverse Transfer Capacitance

ALL

-

80

150

pF

tdfonl

Turn-On Delay Time

ALL

-

17

35

ns

VOO = 175V.I O = 5.0A.Z o

tr

Rise Time

ALL

-

5.0

15

ns

See Fig. 17

tdfoffl

Turn-Off Delay Time

ALL

-

45

90

ns

IMOSFET switching times are essentially

tf

Fall Time

ALL

-

16

35

ns

independent of operating temperature.)

Qg

Total Gate Charge
IGate-Source Plus Gate-Drain)

ALL

-

41

60

nC

Qgs

Gate-Source Charge

ALL

-

18

-

nC

Qgd

Gate-Drain I"Miller") Charge

ALL

-

23

-

nC

LO

Internal Drain IndUctance

-

3.5

-

nH

ALL

-

4.5

-

nH

V GS = 10V. 10 - 12A. VOS - 0.8 Max. Rating.
See Fig. 18 for test circuit. IGate charge is essentially
independent of operating temperature.)

Measured from the
contact screw on tab
to center of die.

Internal Source Inductance

ALL

-

Modified MOSFET
symbol showing the
internal device
inductances.

Measured from the

drain lead. 6mm 10.25
in.) from package to
center of die.

LS

- 4.70

7.5

-

nH

Measured from the

source lead, 6mm
10.25 in.) from
package to source
bonding pad.

$

THERMAL RESISTANCE
RthJC

Junction-ta-Case

RthCS

Case-to-Sink

Mounting surface fist, smooth, and greased.

RthJA

Junction-ta-Ambient

Free Air Operation

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-467

PRINTED IN

u.s

A

UFN740 UFN741 UFN742 UFN743

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
' Continuous Source Current
(Body Diode)

IS

ISM

VSD

Pulse Source Current
IBody Diodel @

®

Diode Forward Voltage

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.

UFN740
UFN741

-

-

10

A

UFN742
UFN743

-

-

B.O

A

UFN740
UFN741

-

-

40

A

UFN742
UFN743

-

-

32

A

UFN740
UFN741

-

-

2.0

V

TC

= 25°C, IS = lOA, VGS = OV

UFN742
UFN743

-

-

1.9

V

TC

= 25°C. IS = B.OA. VGS = OV

BOO

-

ns

TJ

~~
• 150'C,IF - 10A,dlFldt = l00Al!,s
T J • 150'C, IF = lOA, dlFldt = 100 Alps

trr

Reverse Recovery Time

ALL

ORR

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by lS + lOo

 'O(on) x ROS(on) mix.

,

I

~

0

I

TJ·'25OC

J

!;;

Oil

IO/J.I'ULSETEST

J

20

Fig. 2 - Typical Transfer Characteristics
25

VI

"1 1

'1
I

,

J

II

E
5

y

I.

4~

20
40
so
80
VOS, ORAIN·TO·SOURCE VOLTAGE (VOLTSI

~

VGS. GATE·TO·SOURCE VOLTAGE (VOL TSI

Fig. 4 - Maximum Safe Operating Area

Fig. 3 - Typical Saturation Characteristics
100
25

r-JPlPUlSETJ

so I- UFN740. 1

20

~~V_
5

~'e

~
5

~

~"

/

~+

.....

OPERAI~.~

.

BY Roston)

INTHIS

I,
~I'i-

I'

lQ",s

lOOps

=UFN742.3

~
~~
:;;...sv- ~

,

,

1m.

III

~

10ms

E

:=::TC' 2SOC
0.5 ;:::: TJ' ISO'C MAX

lOOms

'-- RthJC '" 1.0 K/W

r- SINGLE PULSE

-~GS'5IV- ~
02

~V

2
4
B
I
VDS. ORAIN·TO-SOURCE VOLTAGE (VOLTSI

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-

--;z AREA IS LIMITED

UFN742.3

20

IV,

10

1110

o. 1

10

1.0

UFN741.3::::;

I~lrf'f
10

20

50

100

200

~~
1T
500

Vas. ORAIN·TD-SOURCE VOLTAGE (VOLTS)

4-468

PRINTED IN U.S.A

UFN740

UFN741

UFN742 UFN743

Fig. 5 ... Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

I

2

•

0
0=0.5
NOTES

r~.2

2

3:JLJL

rO.l

~2-1

~

'1==00'
5 r002
;;;0.01

1 DUTY FACTOR, 0 -

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

2~

:~

2 PER UNIT BASE'" RthJC:: 1.0 OEG elW.
3. TJM - Te '" POM ZthJC(t}

1
10-3

10-4

10-2

10-1

1.0

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Fig. 7 ... Typical Source-Drain Diode Forward Voltage

Fig. 6 ... Typical Transconductance Vs. Drain Current
15

- J~ PUJSE TEsl
v'os >

/
20

I~(on))e' ROSlon) maJ.

I

~

TJ=-55 0 C

/~
TJ =25 0 C

/

T~" 12~OC

~
~ 1/

,

TJ = 1500e

VI

U

If--

10
Hi
20
10. DRAIN CURRENT (AMPERES)

10

25

T '-'I-

25 C

I
o
Vso. SOURCE·TO-DRAIN VOLTAGE (VOL IS)

Fig. 9 ... Normalized On-Resistance Vs. Temperature

Fig. 8 ... Breakdown Voltage Vs. Temperature

,

2.5

12

./V
5

5

5

V

./

V

,.. .......
,..
......

..,..... ....

/

/
,/
/

0.5

5

o

0.7 5
-40

40

80

120

-40

160

TJ, JUNCTION TEMPERATURE (OCI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

~

4-469

"""V

o

V
VGS"OV __

'D'5.5A

4(/
80
120
TJ. JUNCTION TEMPERATURE lOCI

>--

160

PRINTED IN USA

UFN740 UFN741

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage
2000

.!.

1'00..

!

20

-cd,+clId

I

~ ""'-

\
\

,~ 1200

§u

Fig. 11 - Tvpical Gate Charge Vs. Gate-to·Source Voltage

C;a ,cII + cild. !:,t. SHORTEO.!
,.-- c ra ' CgrJ
_
_vGs'ov
~
'·IMH.
~C""Cd'+ + lid

lS00

VOS'80J_~
I
I

c!.

r-- r-VoS'200V
I
I~
VDS' 320V "-..,

1

0

1\

,"
'"

800

\

-....

.......

1'00..

~ """'"
~

~

~

~

u

lo"2A
FOR TEST CIRCUIT

/

F
TEI8

~

DURATION. INITIAL TJ '" 250C. (HEATING
EFFECT OF 2.0 IlS PULSE IS MINIMALl

VGS~lOVJ

2

8

. . .V

l/

i"- r--..

II

/

i"""-

~'20V

f'
r---...

.......

r-....

i' ~
UFN742~

UFN740.741

'"'""

.......

20

80

Fig. 13 - Maximum Drain Current VI. Case Temperature

1-~

10

60

ag• TOTAL GATE CHARGE (nC)

10
ROS(on) MEASURED WITH CURRENT PULSE OF

40

20

Fig. 12 - Typical On-Resistance Vs. Drain Current

2.0~

-

f 1-

Vos. oRAIN-TO-SOURCE VOLTAGE (VOLTS)

6

~

I

l

cra

A~

W

5

""'- ...
w a m

4

UFN742 UFN743

0

40

30

50

25

75
100
TC. CASE TEMPERATURE ('C)

10. DRAIN CURRENT (AMPERES)

r----

", ~

125

,
150

Fig. 14 - Power VI. Temperature Derating Curve
1~

120

~

'""

" "'\

",

"

~

0

"- 1'\
'\

m

~

so

80

100

120

~

1~

TC. CASE TEMPERATURE ('C)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-470

PRINTED IN U,S.A

UFN740 UFN741

Fig. 15 - Clamped Inductive Test Circuit

UFN742 UFN743

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OITAIN

VGS.R .
REQUIRED PEAK IL

D_UT........r::F

IL+---<>--- 1~lon) ~ RDS(~n) ma~.

1/

I
6.0V

I

j

t-- ~TJ::::1250e
I
I

Sf

I">~
J;~
k:::::: ~

L

T

1

4.~V

4.0V
50
100
150
200
VDS. DRA1N·TO·SOURCE VOLTAGE IVOLTS)

10

250
VGS. GATE·TO·SOURCE VOLTAGE IVOL TS)

Fig. 4 - Maximum Safe Operating Area

Fig. 3 - Typical Saturation Characteristics

"-7.0V.1.

r-- sl JJI Pu!SE TESl

~~

I

6.V"'"

6.0V-

V

f

1

J

5y=

b

I

50

""""

20
10

1/

V
Vi

S

'+===

-

UFN822.3

~

UFN820.1

i
z

=

~

E

F--=o

'=!==

II I

OPERATION IN THIS
AREA IS LlMITEO
BY ROSlon)

u~Nko.ll

m
~

4.~V_1--

4.0V
12
16
VDS, DRAIN·TO·SOURCE VOLTAGE IVOLTSI

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1'--.1/

TJ = 25°C

TJ"-55'C"

10",

I'.

\ ..

.

10

1m.

05

-,

Te" 250e
0.2 f-TJ" 150'C MAX.
f- RthJC " 3.12 K/W
O. 1 ",=SINGLE PULSE

III
10ms

UFNB21, ~~
UFN820,2
10

20

"

UF~22.~
1.0

20

50

100

200

i1
DC

500

Vas. DRAIN·TO·SOURCE VOLTAGE IVOLTS)

4-474

PRINTED IN U.S.A.

UFN820

UFN821

UFN822

UFN823

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Case Vs. Pulse Duration

I

1 1
I

0'0.5

....

1--0.1
1 1::=0.05

~

-- ...

1- 0.2

3:JL...rL
PDM

::oil!

~2~

1--0.02

r-~

11

NOTES,

1. DUTY FACTOR. 0 '"

~~

SINGLE PULSE (TRANSIENT

2. PER UNIT BASE' R'hJC' 3.12 DEG. CIW.

THERMAL IMPEDANCEI

3. TJM' TC' PDM Z'hJc(tI·
1
10-3

'I.

2
5
10-2
2
5
10-1
SOUARE WAVE PULSE DURATION (SECONDS)

Fig. 6 - Typical Transconductance Vs. Drain Current

,

,

80/JsPUlSE TEST

'

\

t---vos> 10(00) K RaS(on)

'~

,.

~

~ r---;j'25,L-

I-""
.......... f.V

!':
>-

z

---

w

TJ'25'C,

~
~
~

u

z

TJ"'1250C __

~

Ih ~ --

10

I:::::=.-TJ= 1S0 OC

'" TJ • 150'Cc:::::

w
~

j~

~
~

II

I

l"-TJ' 25'C

III

I

I

'I

1.0

.1

o

1

10. DRAIN CURRENT (AMPERES)

VSD. SDURCE·TO·DRAIN VOLTAGE IVOLTS)

Fig.8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On·Resistance Vs. Temperature
2.6

1.2 6

5

-

lL

vGS .lov
r- r- IO·2.5A

l--"

j...' V

5
",

5

V

10

J.
max.

V

VV

1.0

Fig. 7 - Typical Source·Drain Diod. Forward Voltage

TJ'-~

V

5·

~

j

,

. /~

lL

V
'I'

0

./
5

6

07 5

-40

40

80

120

2

160

-40

TJ, JUNCTION TEMPERATURE (OCI

UNITROOE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

VI"

~

40

80

120

160

TJ. JUNCTION TEMPERATURE (DC)

4·475

PRINTED IN U.S A

UFN820

Fig. 10 - Typical Capacitance VI. Drain·to·Source Voltage
100II

i

~

I

Fig. 11 - Typical Gate Charge VI. Gate·to-Source Voltage

J f· \MHZ L J

Vas'" lOOV

Co. • Cp + Cad. C... SHORTEO- r-C,. - Cgd

!

C_.Cds+~

- f--

,

- f--

-Cds+ C...

I

I

~~
l"dr-

~~

q

Cia

Co.

-.

~

viis • 4DDV. UFN82D. 822 ~

I
\'
......
~
\ I........

200

!

Vos'" 2S0V

I

I

1\
\\ r---.

400

U

UFN823

VGS'.o

J

800

UFN822

20

I

800

UFN821

I

C,.-

10

40
20
30
VOs. ORAIN·T0-80URCE VOLTAGE (VOLTS)

/

'0"3A

1

FOR TEST CIRCUIT C--

SjE F'1RE

50

12

15

20

Og. TOTAL GATE CHARGE (nC)

Fig. 12 - Typical On-Resistance VI. Drain Current

Fig. 13 - Maximum Drain Currant VI. Case Temperatura
3.0

1
VGS -10V

8

7

6
5

V

4

3

."
2

V

/

V

J

Iv
If

2.4
S'20V

r---... ~

~

11.8 l"- I'-. f' r-...
i t-- r-u~~ ....... r-....

UFNI2O.821

1'l
z

t'-... '"",-

1.2

.......

~

/

co

!'..""

E

~

O.6

EFFECT OF

a .. PULSE IS MINIMAL.)
10

0
25

14

12

~

,

RDS(on) MEASURED WITH CURRENT PULSE OF
2.0", DURATION. INITIAL TJ· 250C. IHEATING

,D. DRAIN CURRENT (AMPERES)

75

50

100

126

150

TC. CASE TEMPERATURE.(OC)

Fig. 14 - Power VI. Temperature Derating Curve
4D

'\

35

~
~
\

0

\

5

"

0

~

5

2D

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

8D
100
60
TC. CASE TEMPERATURE (OC)

4D

4·476

120

~
140

PRINTED IN U.S.A.

UFN820 UFN821

Fig. 15 - Clamped Inductive Test Circuit

UFN822 UFN823

•

Fig. 16 - Clamped Inductive Waveforms

VARY tp TO OBTAIN
REQUIRED PEAK IL

VGS"

TD
r.r-tPL

OUT

'L ....--<>---

ALL

VOS

= OV, T C = 125·C

>1010n) x ROSlon) max.' V GS = 10V

VGS = 10V,I0

= 2.SA

>1010n) x ROSlon) max.' 10 = 2.5A

gfs

Forward Transconductance

ALL

2.5

3.25

-

S ItIl

Ciss

Input Capacitance

ALL

600

800

pF

Coss

Output Capacitance

ALL

100

200

pF

C rss

Reverse Transfer Capacitance

ALL

-

30

60

pF

tdlon)

Turn-On Delay Time

ALL
ALL

-

ns

Rise Time

-

30

tr

30

ns

See Fig. 17

tdloff)
tf

Turn-Off Delay Time

ALL

-

55

ns

Fall Time

ALL

-

-

30

ns

(MOSFET switching times are essentially
independent of operating temperature.)

Qg

Total Gate Charge

ALL

-

22

30

nC

Gate-Source Charge

ALL

-

11

-

nC

Qgd

Gate-Drain I"Miller") Charge

ALL

-

II

-

nC

LO

Internal Drain Inductance

-

3.5

-

nH

(Gate-Source Plus Gate-Drain)

Qgs

ALL

-

4.5

-

nH

VOS

VGS = OV, VOS

= 25V, f = 1.0 MHz

See Fig. 10
VOO = 225V,I 0 = 2.5A, Zo = 1511

V GS = 10V, 10 - 6.0A, VOS - 0.8 Max. Rating.
See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the
contact screw on tab
to center of die.
Measured from the

drain lead, 6mm 10.25
in.) from package to
center of die.

LS

Internal Source Inductance

ALL

-

7.5

-

Modified MOSFET
symbol showing the
internal device
inductances.

nH

Measured from the
source lead. 6mm

10.25 in.) from
package to source

bonding pad.

$

THERMAL RESISTANCE
RthJC

Junction-to-Case

AthCS

Case-to-Sink

Mounting surface flat, smooth, and greased.

RthJA

Junction-to-Ambient

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-479

PRINTED IN

u.s

A

UFN830

UFN831

UFN832

UFN833

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
IS

ISM

VSD

Continuous Source Current
(Body Diodel

Pulse Source Current
(Body Diodel@

Diode Forward Voltage @

UFN830
UFN831

-

-

4.5

A

UFN832
UFN833

Modified MOSFET symbol

-

-

4.0

A

UFN830
UFNB31

-

-

18

A

UFNB32
UFNB33

-

-

16

A

UFNB30
UFNB31

-

-

1.6

V

UFNB32
UFNB33

-

-

1.5

800

-

~C

T J - 150·C, IF

showing the integral
reverse P-N Junction rectifier.

~
TC

=

25'C, IS

= 4.5A, VGS = OV

V

TC

=

25'C, IS

= 4.0A, VGS = OV

ns

T J - 150·C, IF

= 4.5A, dlF/dt = 4.5A, dlF/dt -

1 00 A/~s

trr

Reverse Recovery Time

ALL

ORR

Reverse Recovered Charge

ALL

-

ton

Forward Turn-on Time

ALL

Intnnsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LO'

4.6

@ Pulse Test: Pulse width .. 300~s, Duty Cycle .. 2%.

CDTJ = 25'C to 150'C.

100 A/~s

@ Repetitive Rating: Pulse Width limited
by max. junction temperature.

See Transient Thermal Impedance Curve (Fig. 5),

Fig. 2 - Typical Transter Characteristics

Fig. 1 - Typical Output Characteristics
10V

55V-

I I
r-I aOllS luLSE1TEST 1-

,

-BO ,,5 PULSE TEST

Vos> lO(on) x ROS(on)

vGs·'·ov-

max

-3

'------ _TJ"'~1250C

r--- -TJ"-"OC, ~
l'--...----""'f1
TJ''''C,

'["- = =

rJ.
/ '1/

I

,!V~ = =
200

100

~

300
VGS. GATE TO SOURCE VOLTAGE {VOLTS)

Vas, DRAIN TO SOURCE VOLTAGE (VOLTS}

Fig, 3 - Typical Saturation Characteristics

Fig, 4 - MaKimum Sate Operating Area
100

,

80~fPUJETESJ
~

L- V

3

#

50"= :::::

,

I

l?

II'"

i

10

~

VGs·"t=

10~s

2

~

10

_0 05

,+~ ~

r-..

I.oi

0.2
O.

1111

Ut~32i~r

z

=

-

UFN830,1

"'"'u=>

10

100~s

I,

l,r I I

1m.

f-- TC' 2SoC
f=TJ ,'so'c MAX.
f-- RthJC • 1.67 KIW

10ms
UF~831,

r-ISI~GLT pnSIEll

, 1 Lllli
, 0

3

UFNsaO,2:::::
10

20

SO

100

200

lOOms

o~tH
SOD

Yes, DRAIN·TO·SOURCE VOLTAGE (VOLTS)

Ves, DRAIN TO-SOURCE VOLTAGE (VOL IS)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

UFN830,1

~~3

20

>z

)
2

OPERATION IN THIS
AREA IS liMITED
BY ROS(on)

so

IO~1r'
V;,._
r--

4·480

PRINTED IN USA

UFN830

UFN831

UFN832

UFN833

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to·Casa Vs. Pulse Duration

~

~

:L

wz

~;

~~
~~

~~

111!1111111111111111111111111111~~!~!;l~~~tl
0"0.5

r.n n

0.5 r-0.2
0.2

0.1

.J:..J LJ L

0.1

t

~2~

0.05

~ :':i" ~:I- ~A-°:~'F 5~

.-.- 1.0
"":.... 0.05

~
~

0.02

SINGLE PULSE ITRANSIENT
"

1. DUTY FACTOR, 0" 'I
'2

I--f-+-++++++r~,HERMI AjLlMPIED~N'CTEII'

1 -11-11"tt---t-+-H-++++tI-t-+-+t--t+H++-+-+ 2. PER UNIT BASE· R,hJC • 1.67 DEG. CIW.
f-++--++H+t1ft11-++-+_+-1+1
3. TJM' TC' PDM ~'hJCltI.

0.01

10"5

TJ1 •.

./

/

3

/'

/,

VI

/'

r-::r

10

Fig. 7 - Typical Source-Drain Diode Forward Voltage

'1~I;.- f-"

-

~

10 2
TJ = 25°C

~

"

:;

",

i
~

H

10

~
~

V

TJ: 1sooe

~

'I

ffi

Vas> 10(on) It ROS(on) max.

'TJ"150 0C

/'

z

I'

I

jOllSPUtSETEr
1.0

I I

TJ'~50C

o

10. DRAIN CURRENT (AMPERES)

VSD. SOURCE-TO·DRAIN VOLTAGE (VOLTS)

Fig. 8 - Breakdown Voltaga Vs. Temperature

Fig. 9 - Normalized On-Resistance Vs. Temperature
22

12 5

U

z

5

"..

.",. i-""""

5

".

L'

""
in

'"

/

18

./

~ffi 14

V

UN

/

~~
.,,,

.".

/

o~

:;~

~
!

~

5

40

80

120

160

TJ,JUNCTION TEMPERATURE (OC)

UNITRODE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

L

/

~

z

5V-

07 5
-40

1.0

",h _ I--I -

TJ=~

/ /'
V / / 'V
1/ /'
1

10.1

'I. SQUARE WAVE PULSE DURATION ISECDNDSI

Fig. 6 - Typical Transconductance Vs. Drain Current

4

5

10.2

10"

1.0

06

,V

/

./
VGS' 10V
Irl.5

j - r--

0.2
-40

40

80

120

TJ. JUNCTlON TEMPERATURE (OC)

4-481

PRINTED IN U.S A.

II

UFN830

Fig. 10 - Typical Capacitance Vs. Drain·to·Source Voltage

UFN831

UFN832

UFN833

Fig. 11 - Typical Gate Charge Vs. Gate-to·Source Voltage

2000
20
v'GS" 0'

J J

.'
I" 1 MH,
Cia'" Cp + Cgd. Cds SHORTED _

1600

CIlI

u

z

U

;t
~

800

u'

I'

r---:

\

...... ~

\

-

~Cds+Cgd

-

Vas = IODV

I
Vas =,250V
Vos= 40DV

,

~

ISS

~~
~V
V

///

\

400

Cgd

C"Cgd
Coa"'Cds+Cgs+Cwd
1200

;0

'"

~
10

L

-

'0' 8A
FOR TEST CIRCUIT- c---

V

20

30

40
Vos. DRAIN·TO·SOURCE VOLTAGE (VOL IS)

SlFIG1REli
16

50

24

32

40

Og. TOTAL GATE CHARGE InC)

Fig. 12 - Typical On-Resistance Vs. Drain Current

Fig. 13 - Maximum Drain Current Vs. Case Temperature

5
ROS(on) MEASURED WITH CURRENT PULSE OF
2.0~s DURATION. INITIAL TJ = 25°C. (HEATING

EFFECT OF 2.0., PULSE IS MINIMAL

II

r.........

4
VGS'·l0V

3

2

.. r'

V

V

V

V

V

VGS" 20V

c--

j:---

I"'-...

r-...... ....... J'...

r-UFN:'~

UFN830.831

........ r-.,.
........ t"--..~

f"". ~
....

~

o

1
10

,

'&.

1

15

20

25

25

50

10. DRAIN CURRENT (AMPERES)

75

100

125

150

Te, CASE TEMPERATURE (DC)

Fig. 14 - Power VI. Temperature Derating Curve
80

t-0

r-...'\
1'\

'j'\..
0

'\

'\

0

0

'\.

0

20

40

60

80

100

Te. CASE TEMPERATURE (DC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL, (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-482

'"

120

~
140

PRINTED IN U.S.A.

UFN830

Fig. 15 - Clamped Inductive Test Circuit

UFN831

UFN832 UFN833

II

Fig. 16 - Clamped Inductive Waveforms

VARY., TO OBTAIN
REQUIRED PEAIC 'L

VGSOR

Fig. 17 - Switching Time Test Circuit

PRF" 1 kHz

v,

v,

tp" I J,/S

_

r-----..,
I
z,
I
151!
I
I I1.
I
I 20V _ __ ...II
1..:_

Zo

......- - y

TO SCOPE

ISH

Fig. 1B - Gate Charge Test Circuit
+V DS

(ISOLATED
SUPPLY)

-

0..r=Jl·5mA

--I\,IV',_....-"'V\.~-o -VOS
IG
10
CURRENT
SHUNT

UNITROOE CORPORATION 0 5 FORBES ROAD
LEXINGTON, MA 02173 0 TEL. (617) 861-6540
TWX (710) 326-6509 0 TELEX 95-1064

4-483

-=-

CURRENT
SHUNT

PRINTED IN U.S.A

UFN840
UFN841
UFN842
UFN843

POWER MOSFET TRANSISTORS
500 Volt, 0.85 Ohm

N-Channel

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode power MOSFET design utilizes the most advanced technology available.
This efficient design achieves a very low ROSton} and a high transconductance.

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
No Second Breakdown
Excellent Temperature Stability

The Unitrode power MOSFET features all of the advantages of MOS technology such as
voltage control, freedom from second breakdown, very fast switching speeds, and
thermal stability.
These power MOSFETS are ideally suited for many high-speed, high-power switching
applications such as switching power supplies, motor controls, and wide-band and
audio amplifiers.

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

UFN840
UFN841
UFN842
UFN843

500V
450V
500V
450V

0.850
0.850
1.100
1.100

8.0A
8.0A
7.0A
7.0A

MECHANICAL SPECIFICATIONS
UFN840 UFN841
3.42(0.1351

UFN842 UFN843

TO-220AB

~1D.""""~
9.S8ili:38bl

25410.100} •.0I10.t6I1oIA

~±

1651(0.8501
1423(0.560)

~

1~0F-"lN

TERM3-S0URCE

T

482(O.1~"

356(01401

j
l
LXX
6.35(02501
MAX

-.L

14.13(0.5801

1.77 (00101
1 15 {00451

~ (0.1151

!-+-++-'

l~:::;:: :f,:~ml

iYECTlONX-X

~D
T"I----I

~~~ :~::l

204(O.08Oi

Dimensions in Millimeters and (Inches)

4/83

4-484

~UNITRDDE

UFN840 UFN841

UFN842

UFN843

ABSOLUTE MAXIMUM RATINGS
Parameter

UFNB40

UFN841

UFN842

UFN843

Units

500

450

500

450

V

500

450

500

450

V

Continuous Drain Current

8.0

8.0

7.0

7.0

A

10@TC = 100°C Continuous Drain Current

5.0

5.0

4.0

4.0

A

32

32

28

28

°C

Gate - Source Voltage

CV

Max. Power Dissipation

linear Derating Factor
Inductive Current, Clamped

ILM

I

32

Tst\t

Lead Temperature

V

125

ISee Fig. 14)

1.0

ISee Fig. 14)

ISee Fig. 15 and 16) L = 100!,H
32
I
28

Operating Junction and
Storage Temperature Range

TJ

A

±20

W
WIK
A

28

J

-55to150

°C

30010.063 in. 11.6mm) from case for lOs)

°C

ELECTRICAL CHARACTERISTICS @ TC = 25"C (Unless otherwise specified)
Parameter

BVOSS

Drain - Source Breakdown Voltage

V GSlth) Gate Threshold Voltage

Type

Min.

Typ.

Max.

Units

UFN840
UFN842

500

-

-

V

VGS = OV

UFN841
UFN843

450

V

10 = 250!,A

2.0

-

-

ALL

4.0

V

500

nA

VGS = 20V

Test Conditions

VOS - VGS, 10 - 25Ol'A

IGSS
IGSS

Gate-Source Leakage Forward

ALL

-

Gate-Source Leakage Reverse

ALL

-

-

-500

nA

VGS - -20V

lOSS

Zero Gate Voltage Drain Current

ALL

-

-

250

I'A

VOS = Max. Rating, V GS = OV

-

1000

I'A

VOS

UFN840
UFN841

8.0

-

-

A

UFN842
UFN843

7.0

-

-

A

UFN840
UFN841

-

0.8

0.85

[l

UFN842
UFN843

-

1.0

1.1

(I

ALL

4.0

6.5

-

S 10)

10(on)

On-State Orain Current

®

ROS(on) Static Drain-Source On-State
Resistance ~

9fs

Forward Transconductance

®

= Max. RatingxO.8, VGS = OV, TC =

125°C

V OS ) 1010n) x ROSlon) max.' VGS ~ 10V

VGS

= 10V, 10 =

4.0A

VOS ) 1010n) x ROSlon) max.' 10

Ciss

Input Capacitance

ALL

-

1225

1600

pF

Coss

Output Capacitance

ALL

-

200

350

pF

85

150

pF

17

35

ns

VOO ~ 200V, 10

5

15

ns

See Fig. 17

= 4.0A

VGS = OV, VOS = 25V, f = 1.0 MHz
See Fig. 10

Crss

Reverse Transfer Capacitance

ALL

tdlonl

Turn-On Oelay Time

ALL

tr

Rise Time

ALL

-

tdloffl

Turn-Off Oalay Time

ALL

-

42

90

ns

tf

Fall Time

ALL

-

14

30

ns

(MOSFET switching times are essentially
independent of operating temperature. 1

Qg

Total Gata Charge

ALL

-

42

60

nC

V GS ~ 10V, 10 = lOA, VOS = 0.8 Max. Rating.

Gate-Source Charge

ALL

20

-

nC

Qgd

Gate-Orain I"Miller") Charge

ALL

-

22

-

nC

LO

Internal Drain Inductance

-

3.5

-

nH

(Gate-Source Plus Gate-Drainl

Qgs

K

4.0A, Zo = 4.70

See Fig. 18 for test circuit. (Gate charge is essentially
independent of operating temperature.)

Measured from the

contact screw on tab
to center of die.

ALL

-

4.5

-

nH

inductances.
Measured from the

drain lead, 6mm 10.25
in.) from package to
center of die.

LS

Internal Source Inductance

ALL

-

Modified MOSFET
symbol showing the
internal device

7.5

-

nH

Measured from the
source lead, 6mm

10.25 in.) from
package to source
bonding pad.

-$

THERMAL RESISTANCE
RthJC

Junction-to-Case

RthCS

Case-to-Sink

Mounting surface flat. smooth, and greased.

RthJA

Junction-ta-Ambient

Free Air Operation

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-485

PRINTED IN U.S.A

Ii,!

UFN840

UFN841

UFN842 UFN843

SOURCE·DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
(Body Diode)

Modified MOSFET symbol
showing the integral
reverse P~N junction rectifier.

UFN840
UFN841

-

-

8.0

A

UFN842
UFN843

-

-

7.0

A

UFN840
UFN841

-

-

32

A

UFN842
UFN843

-

-

28

A

UFN840
UFN841

-

-

2.0

V

UFN842
UFN843

-

-

1.9

trr

Reverse Recovery Time

ALL

Reverse Recovered Charge

ALL

-

1100

QRR

6.4

ton

Forward Turn-on Time

ALL

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS

IS

ISM

VSO

Pulse' Source Current
(Body Diode) @

Diode Forward voltage @

 1010n) x ADS(on) max.

~I

I

V
D

I

A

y

y

II

~

10

Fig. 4 - Maximum Safe Operating Area

~~

~

50

~

7V~"..

~

~

!"

6V

'"

i

VGS' 5V

51=

,
2

,

IL

4·486'

IOms
100m

f-r-;

I,

ittt
1m,

II

t

f= TJ' 150'e MAX H:

1
10

10

I'

,

rti -tiiiffi .
a

VOS. ORAIN·TO.sOURCE VOLTAGE (VOLTS)

r-

...

,-

r-- Te' 25'e
5

OPERA.TION IN THIS
AREA IS LIMITED
BY ROS(on)

r

UFN842,3

r-- RthJC • I 0 KIW
2 f-- SINGLE PULSE

jV

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

01:::

JFN~:,I

.9

If'

.!!!N840.1
UIFNf'1 31·

~1 0

.J~

r-

of-

z

~

I
'II"

10

. VG~, GATE·TO·SOURCE VOLTAGE (VOLTSI

10 0

~

r-

4

100

Fig. 3 - Typical Saturation Characteristics

~

~_

/TJ=125 0C

'1/

~

20
40
60
80
VOS. ORAIN·TO.sOURCE VOLTAGE (VOLTS)

10V
9V
8V

I

V·~J·"250~

JJ. V

4~

80p.lpuLSe 1YeST

VTJ'.550C

1

-

;ol~,
"tttt
100m

~-

UFN84I.3

OC 1

ILIFN~:2

iffi

50
100 200
to
20
Vas. DRAIN TO SOURCE VOLTAGE (VOLTS)

500

PRINTED IN U.S A

UFN840 UFN841

UFN842

UFN843

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction·to-Case Vs. Pulse Duration

ffi

iii

L

~z

~~
0=0.5
,,~ 0.5

$~

~~ ~~
~~
c

c

ililllll!llllllllllllllllllllfll

f-~.2

0.2

t:;;:;

!::::=
~+t=~I1""'=+++++++1:t+=++
~~ =-j

1--0.1

0.1 <=0.05

1.0I1---0.02

~~ 0.052 io-I""T'
C:;0.01
t-t-

.....

~
~

0.0

El..IL

NOTES:

PDM

~2--l

*

~'HN~;~:~~~~J~:~~~:ENT-t_+-I-++t+tl-+-+-+t-t-t1I-tt+-++ 2.1. PER UNIT BASE' RthJC· 1.0 DEG. CIW.
DUTY FACTOR. 0 '"

3. TJM - Te =POM ZthJc(tl.

0.01 L......L......L.-l....L...J..J...u.U",-l.-l.--1-l....L.u.J..u......J--1_'-I-I...u.J.IJ_'-'-...L.,u...L...UJ.J.......L.-'-.......J...................................- "...................,lJ
1.0
10
~
~
~
~
~
II.SDUARE WAVE PULSE DURATION (SECDNDSI

Fig. 6 - Typical Transconductance Vs. Drain Current
16.0

Fig. 7 - Typical Source-Drain Diode Forward Voltage

f--~

/JJ pulSE TEll
~DS > l'O(on) ~ RDS(~nl ml~.

! 12.8

i

ili

iil
~ 9.6

TJ= -55°C

~

TJ" 25 0 C

/

l

3.2

'r

r1,. 12Slc

~
~

If
8

12

'0. DRAIN CURRENT (AMPERESI

2

TJ= 1500 C

z

~w
~

16

1.0

O.

5r=

TJ" 250C

0.2

O.

20

IL

5

I

I

z
~ 6.4

~
£

10

~

co

,

20

,

,

2

3

4

VSO. SOURCE·TO·ORAIN VOLTAGE (VOLTSI

Fig. 8 - Breakdown Voltage Vs. Temperature

Fig. 9 - Normalized On-Resistance VI. Temperature

1.25

2.5

..L

L

V~

.,.,.

j...'

/

V
L

0

5/

./'
"..,.

5

V

VGS-IOV
'O"·5A -

-

5

o

0.1 5
-40

V

lL

40

80

'20

-40

'60

TJ,JUNCTtDN TEMPERATURE (DC)

UNITROOE CORPORATION' 5 FORBES ROAO
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-487

40
80
120
TJ,JUNCTION TEMPERATURE (DC)

160

PRINTED IN U.S.A

•

UFN840 UFN841

Fig. 10 - Typical Capacitanea VI. Drain·to-Source Voltage
2000
Cits • c. +cgd. Cdo SHORTED
- c.. " Cgd
_
~

1600

UFN842 UFN843

Fig. 11 - Typical Gate Charge Vs. Gate·to·Sourea Voltage

JVGS'OVJ.

0

f=lMHz

~c .. "c.t.+ .+ gd
-Cdl+Cgd

~ 1200
~

~

800

u'

400

....... ~

\
\
\
\

,
"'

5

VOS'400V"

0

'I'\.

w

~os' I?£IV ""
,vos' 2~OV" ~

C'IS

r

5

...... j'...

..... ~
~

~

'O"'OA
FOR TESTCIRCUIT
SEE FIGURE 18

~

~

%

~

00

3.0

0,. TOTAL GATE CHARGE (nCI
Fig. 13 - Maximum Drain Current Vs. Case Temperature
10

MEASU~EO WIT~ CURRE~T

ROS(. II
PULSEIOF
2.0 •• ~URATION. INITIAL TJ' 25'C. (HEATING
EFFECT OF 2.0 ",PULSE IS MINIMAL.l
.-

1

~

u

z
~ 2.5

VGS"OV

~

g

~

2.0

:i1

~
.,~

!

/

1.5

.."

1.0

1 0.5

r----

8

---

.........

........ t--.... .........

~

~VGS"20V

~

.,~

80

60

20

Fig. 12 - Typieal On·Resistanea Vs. Drain Current

ig

-

I

c.,

VOS. ORAIN·TO·SOURCE VOLTAGE (VOLTSI

3.5

~

/

C'D

~

...&i

~

~

--b,N,841
U~8~ "-

",

V

~~

2

----10
15
20
25
'0. DRAIN CURRENT (AMPERESI

30

o

35

~

25

50

75
100
TC. CASE TEMPERATURE ('CI

125

150

Fig. 14 - Power Vs. Temparature Derating Curve
140
120

0

--- "
i"I..

r\.

""
r\.

I'\.

"

r\.

0

~

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

40
60
80
100
TC, CASE TEMPERATURE (OCI

4-488

""
r\..

120

140

PRINTED IN U.S.A

UFN840 UFN841

Fig. 15 - Clamped Inductive Test Circuit

UFN842

UFN843

Fig. 16 - Clamped Inductive Waveforms

•

VARY tp TO OBTAIN
REQUIRED PEAK 'L
VGS.R

OUT

'L---o---........".......~

Fig. 17 - Switching Time Test Circuit
200V

ADJUST Rl TO OBTAIN
SPECIFIED 10

4511
VDS

r;U~

---1

I GENERATOR

OUT

o-,-----.().---'l..J--1I

Jl I
I ~ri~CE
IMPEDANCE
L ___ J

Fig. 18 - Gate Charge Test Circuit
+Vos
(ISOLATED

SUPPl VJ

-

O~·5mA

IG
CURRENT

SHUNT

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-489

10
CURRENT
SHUNT

PRINTED IN U.S.A

POWER TRANSISTORS

UMTI006
UMTI007

5A,500V, Fast Switching, High ES/b
Silicon NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•
•
•

These high voltage glass passivated
power transistors combine fast
switching; low saturation voltage and
rugged Eslb capability. They are
designed for use in off-line power supplies, high voltage inverters, switching
regulators, ignition systems and
deflection circuits.

Rise Time: 0.4"S}
Fall Time: 0.4"S
Ic 3A
High Second Breakdown Energy: 540"J
Collector Emitter Voltage: up to 500V
Peak Collector Current: lOA
Key Parameters characterized at 100·C

=

ABSOLUTE MAXIMUM RATINGS
UMTfl106

Collector Emitter Voltage, VCEV ....................... .......................... ......................................... ....... ...........

UMTfOO7

............. 400V.................................SOOV

~~::t~~O~!:i~:rt~go!t,a~EeB,ov~E~.(S~~I.::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::: ...... :::.:: . :: . . . . . . . . . . . . . :........................................................................
3DDV
................................. 4DDV
..............
7V......................................
7V
Collector Current, Ic continuous ............................................................................................................................................. SA ..................................... SA
Collector Current, Ic peak ........................................................................................ .................................
...................... 10A ................................... 10A
Base Current, la continuous .................................................................................................................................................... SA .................................... SA
Power Dissipation, 2S·C Case ................... .........................................................................................
.................. lDDW ................................ 1DDW
Derating Factor .............................................................. .................................. ..................................
.. ..........S71W'·C..........................S71W'·C
Operating and Storage Temperature Range.
....... ..................... ......................
.. .......................... -6S to 200·C................ ..

MECHANICAL SPECIFICATIONS
NOTE:

UMTlOO6 UMT1007

Leads may be soldered to within
1116" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

F

~iJE
C

6-79

D

A
B

M
BASE

~I ~~'i"
H
j

G

J-~
~

K

EMITTER

L

c
D
E
F
G
H

J
K

L
M

ins.
875 MAX
.135 MAX
250-.450
.312 MIN
.038- 043 DIA
. 188 MAX RAD
1.177-1.197
655- 675
.205- 225
420- 440
.525 MAX RAD
151-.161DIA

4-490

TO-204AA (TO-3)

mm.
22.23 MAX.
343 MAX.
635-1143
7.92 MIN
0.97-1.09 DIA.
478 MAX RAD .
2990 30.40
1664-17.15
5.21-572
10 67-11.18
13 34 MAX. RAD .
3.84 409 DIA

~UNITRDDE

UMTl006 UMTl007
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

UMTlO06
MIN.
MAX.

UMTlOO7
MIN.
MAX.

Units

Test Conditions

D.C. Current Gain (Note 1)

hFE

12

60

12

60

Ic = 1.5A, VCE = 2V

7

35

7

35

Ic = 3.0A, VCE = 'N

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCE("II

-

1.0

-

1.0

V

Ic = 3.0A, IB = 0.6A

Collector Saturation Voltage,
Tc = 100'C (Note 1)

VCE(,,'I

-

2.0

-

2.0

V

Ic = 3.0A, IB = 0.6A

Collector Saturation Voltage
(Note 1)

VCE(••'I

5.0

-

5.0

V

Ic = 5.OA, IB = 1.0A

Base Saturation Voltage (Note 1)

VBE( ••II

1.4

V

Ic = 3.0A, IB = 0.6A

VBE (••11

1.4

-

1.4

Base Saturation Voltage,
TC = 100'C (Note 1)

-

1.4

V

Ic = 3.0A, IB = 0.6A

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO( ...I

300

-

400

-

V

Ic = O.1A, IB =

Collector-Emitter Sustaining
Voltage
Tc = 100'C (Note 2)

VCEX('''I

350

-

450

-

V

Ic = 3.0A, L = 180,aH
IBI = IB2 = 0.6A
VCE clamp = rated VCEX (,usl

Emitter-Base Cutoff Current

lEBO

-

-

-

2.5

-

-

-

-

2.5

50

ISO

50

ISO

pF

6

24

6

24

MHz

Collector Cutoff Current

I CEV

Collector Cutoff Current,
Tc =100'C

ICEV

Collector Cutoff Current,
Tc =100'C

ICER

Output Capacitance,
Common Base

Coho

Gain-Bandwidth Product

FT

Energy Second Breakdown
(unclamped)

Es/b

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

-

1
0.5

3.0

1
0.5

3.0

mA
mA
mA
mA

a

VEB =9V
VCE = 400V, VBE = -1.5V
VCE = 500V, VBE = -1.5V
VCE = 400V, VBE = -1.SV
VCE = 500V, VBE = -1.SV
VCE = 400V, RBE = 500
VCE = SOOV, RBE = SOO
VcB =lOV,f=lMHz
VCE = 10V, Ic = 0.2A, f = 1 MHz

540

-

540

-

,aJ

Ic = 3.0A, VBE lofij = 4V
L = 120,aH unclamped

td
t,
t.
tf

-

.05
0.4
4.0
0.4

-

.05
0.4
4.0
0.4

I'S

Ic=3.0A
Vcc = 200V
IBI = IB2 = 0.6A
VBEloff) =5V

Inductive Switching Speeds
Tc=lOO'C
Storage Time
Fall Time

ts
t,

4.0
0.4

,as

Ic = 3.0A, L = 180,aH
IBI = IB2 = 0.6A
VCE clamp = rated VCElt (sus)

RsJC

-

4.0
0.4

Thermal Resistance,
Junction-to-Case

-

1.7S

'C/W

1.75

Notes:
1. Pulse width = 2501'S; duty cycle :51%.
2. Sustaining Voltage. Measured at a high current pOint where collector-emitter voltage is lowest. Current pulse length", 501'5; duty. cycle :5 1%.
Voltage clamped at maximum collector-emitter voltage.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-491

PRINTED IN U.S.A.

•

UMTl006 UMTlOO7

Forward Bias Safe Operating Area

'"

g

[;1'"

....

Power Oi~~pation
Limited

Z

'"0:0:

"'I\--

10mS

1\

:>
0

t;

~

80

'...."
u
'"-"

60

0

1mS

";::

1\

U
0:

'"
0

t"-...

20#5]15;

t-D.C.

..J
..J

."I"

100

10

Z

Is,Limited

'"'"

40

'"'"

20

OJ

0

.5

'\
UMTlO06"", t-\"

u

I

_u

UMTlO07

Te 25'C
Curves Apply Below

.2

1m ~atef

.1
5

10
Ve , -

50

f-

'"

:>
u

I

~(/~

~~~/
I~
~J''01'

~<"0

DISSI~A

'" "

AT OESIRED OPERATING VOLTAGE, CERATE
'\
TION CURRENT LIMIT AND I,. CURRENT LIMIT FAOM
2~·C SOA" CURVE
DASH LINES ON SOAR CURVES ARE EXTENSIONS OF

DISSIPATION lIMITj FDA T1EMPERjTURE ,ERATING
PURPOSES

I\~

100

I\.

'1'.<~

\

IIIII

20

f'..,

....
z

\.I\.

IIIII

Vi,o

Power Derating

o

500

200

o

'\

1,\

40
80
120
160
Tc - CASE TEMPERATURE I'C)

COLLECTOR VOLTAGE (V)

200

Reverse Biased Safe Operating Area

r-- r-- V'Etaff) ~5V
Te ~ 100'C
I I
I
I
I--- ..!.£=IB1=l
sz

g

r--

....

z

5
UMTlO06

'"0:0:

----i

1

:>

u

0:

~

0.5
1

..J
..J

UMTl007 -

0

u

I

0.2

_u

0.1

.05
10

20

50

100

200

500

1000

Veoxl ".,- COLLECTOR VOLTAGE (V)

Saturation Voltages

D.C. Current Gain
200
Ve ,

100

lell,

z

;;:

'"z....

I

= 5V

100°C

50

25'C

'"0:0:

I

:> 20
u

t--

.~

<3
0 10

"
!:i

~~

55'C

r--- ~

I

55'C

'"'"

~I\

55'

/ortb' &-

100'C

z

0

~

I--

0:

:> 0.2

r.~

~

~

'"
.05

0.1
Ie -

0.2
0.5
COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

II
l-

VSE 118fl

s'

0

> 0.5

=5

V !--

0.1

~

1A7
~ V 25'C
VCE(IUj

.05

5

.05

0.1
Ie -

4-492

0.2
0.5
COLLECTOR CURRENT (A)

PRINTED IN U.~.A.

UMTl006 UMTl007
Resistive Turn·On Time

ReSistive Turn·Off Time

1000

10

500

2S'C

V

V

~

5

---..

V
tr

I'.

2

~

"Ui

E.
w 100

.:;
w

:2

-I'=- .'~"B=
-r--- Vee = 12SV
.. _f-- -Iell, = 5

{

100'C

r---.l' i'--

:2

;=

;=

td

~

?SQC

!::-..

lDO'C

.-....... V

"':::::1"'-

0.2

20

ts

2S'C
0.5

50

V

Vee = 125V
lell ,=5

/t

~

25'C

I

0.1

10
0.1

0.2

0.5
Ie -

0.2
0.5
Ie - COLLECTOR CURRENT (A)

0.1

10

•

1D0'C

COLLECTOR CURRENT (A)

Switching Time, VeEx I'"'}
Test Circuit

10

Esfb Test Circuit
+IOV

200V
R _ 200V
L -

Ie

.

R8 =¥,lB,:::: 1s2

FOR RESISTIVE SWITCHING.
L ~ 0, UNCLAMPED

:6V

nLJ_

-_

+107Vn

-.J

R,

L

IS\1

ADJUST P.W.
TO OBTAIN
3A PEAK Ie

4V

P.W. = 25MS

SOil

-4V

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. 1617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-493

PRINTED IN USA

POWER TRANSISTORS

UMTI008
UMTI009

BAmp,500VFastSwitching, High ES/b
Silicon NPN Mesa

FEATURES
•
•
•
•
•
•

DESCRIPTION

t

These high voltage triple diffused glass
passivated power transistors combine
fast switching, low saturation voltage
and rugged Es/b capability. They are
designed for use in off-line power supplies, high voltage inverters, switching
regulators, ignition systems and
deflection circuits.

Rise Time: 0.4/ls I - SA
Fall Time: 0.4/ls f c High Second Breakdown Energy: 1500/lJ
Collector Emitter Voltage: up to 500V
Peak Collector Current: 16A
Key Parameters characterized at 100·C

ABSOLUTE MAXIMUM RATINGS
UMT1008

............... 400V...............

Collector Emitter Voltage, VCEV ................ .
Collector Emitter Voltage, VCEOISUSI .
Emitter Base Voltage, VEBO .............. .
Collector Current, Ie continuous
Collector Current, Ic peak.
Base Current, IB continuous .....
Power Dissipation, 25·C Case
Derating Factor.
.................................... .
Operating and Storage Temperature Range

... 300V......

............ 7V...

UMT1009

...... SOOV
400V

........ 7V

......... SA...
....................... SA
. ..... 16A..
... 16A
................. SA......
............... SA
.............. 125W........
........... 125W
.714W/·C...............
.....714W/·C
.............. -65 to 200·C

MECHANICAL SPECIFICATIONS
NOTE:

TO-204AA (TO-3)

Loads may be soldered to within

1/16" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

F

~iT
C

4/77A

D

G
I

I

M

~.1..H
I

A
B

i"

J-~
7

BASE

c

EMITTER

D

L

F
G
H
J
K
L
M

E

ins.
B75 MAX
135 MAX
250- 450
312 MIN
03B- 043 DIA
188 MAX RAD
1177-1197
655- 675
205- 225
420- 440
525 MAX RAD
151- 161 OIA

4-494

mm.
2223 MAX
343 MAX
635-1143
792 MIN
097-109 DIA
478 MAX RAD
2990 3040
1664-1715
521 572
1067 1118
1334 MAX RAD
384 409 DIA

~UNITRODE

UMTlOO8 UMTl009
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Symbol

Test
D.C. Current Gain (Note 1)

hFE

UMTlO08
MAX.
MIN.
12
60

7

UMTlO09
MAX.
MIN.
60
12

7

Units

35

Test Conditions
Ic = 2.5A, VCE = 3V
Ic = 5.0A, VCE = 3V

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCE I,at)

-

1.5

-

1.5

V

Ic = 5.0A, la = 1.0A

Collector Saturation Voltage,
TC = 100'C (Note 1)

VCEI ••I )

-

2.5

-

2.5

V

Ic = 5.0A, I. = 1.0A

Collector Saturation Voltage
(Note 1)

VCEI..I )

-

5.0

5.0

V

Ic = S.OA, I. = 2.0A

1.6

V

Ic = 5.0A, I. = 1.0A

1.6

-

1.6

V

Ic = 5.0A, la = 1.0A

VCEO I'"')

300

-

400

-

V

Ic=O.lA

VCEXlsus)

350

-

450

-

V

Base Saturation Voltage (Note 1)
Base Saturation Voltage,
TC = 100'C (Note 1)
Collector-Emitter Sustaining
Voltage (Note 2)
Collector-Emitter Sustaining
Voltage
TC= 100'C (Note 2)
Emitter-Base Cutoff Current
Collector Cutoff Current

V.E ..I
VaE 1••1)

lEBO
I CEV

Collector Cutoff Current,
Tc =100'C

I CEV

Collector Cutoff Current,
Tc = 100'C

ICER

Output Capacitance,
Common Base

Cobo

Gain-Bandwidth Product

Fy

Energy Second Breakdown
(unclamped)

Es/b

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

35

1.6

-

-

3.0

100

200

100

200

pF

6

30

6

30

MHz

-

1
0.5

-

2.S

-

3.0

1

-

O.S

2.S

-

mA
mA
mA
mA

IS00

-

1500

-

I'J

td
t,
t.
t,

-

0.1
0.4
4.0
0.4

-

0.1
0.4
4.0
0.4

ps

Inductive Switching Speeds
Tc= 100'C
Storage Time
Fall Time

t,
t,

4.0
0.4

-

4.0
0.4

fl.S

Thermal Resistance,
Junction-to-Case

RSJC

-

1.4

-

1.4

'C/W

Ic = 5.0A, L = lS0l'H
lal = 182 = 1A
VCE clamp = rated VCEX ISUS)
VEB = 9V
VCE =400V, VaE = -1.SV
VCE = 500V, VaE = -1.5V
VCE =400V, VaE = -1.SV
VCE = SOOV, VIE = -l.SV

=

VCE = 4OOV, RaE son
VCE = SOOV, RaE = SOn
Vca =10V,f=lMHz
VCE = 10V, Ic = 0.3A, f = 1 MHz
I c =5.0A
lal =IA
L = 120pH unclamped
Ic=S.OA
Vcc=200V
lal = la, = 1.0A
VaE lo'~ = 5V
Ic = 5.0A, L = 180I'H
I" = la,=IA
VCE clamp = rated VCF$. (SUS)

Notes:

1. Pulse width = 2501'S; duty cycle ,,;1 %.
2. Sustaining Voltage. Measured at a high current point where collector·emitter voltage is lowest. Current pulse length
Voltage clamped at maximum collector-emitter voltage.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-495

51!

50pS; duty cycle ,,; 1%.

PRINTED IN U.S.A.

•

UMTl008

Forward Bias Safe Operating Area
20

~

$

...

'"a:a:
"a:
~

<~

~""

"'\ ""'\.
:--....

~~
~'"

~

80

a:

Z
,',

Power Derating
100

IlL

10

~~

::>

,2

...
u
0

1,\

""

,,

.
.

'\

"

"-

";::z

'" 1:\ '"
,
"\
,
"

'"-'-'o

I

25°C
Te
CURVES APPLY BELOW
RATED VeEO

5

10

\

j

Jill

0.2

'~

\

't,

~J

"-

'K~

w
a:
a:

20

~~

AT DESIRED OPERATING VOLTAGE,

i'- ......
I--- 1--

DERAT~ DISSI~A.'\

liON CURRENT LIMIT AND '1. CURRENT LIMIT FROM
2S·C SOAR CURVE

'\

DASH LINES ON SOAR CURVES ARE EXTENSIONS OF I
DISSIPATION LIMITS FOR TEMPERATURE DERATING

\

20
50
100
200
VeE-COLLECTOR VOLTAGE (V)

iI'.s:....,

40

::>
u

I

~(/

I

I
I

'"

I
I
I

"a:0

...

"'"

-'
-' 0.5
0

--

~

"I

-"

UMTl 09
UMTlO08
V BE

(OFF:

=

0.2

Tc

0.1

I III
10

50

20
VeEXISuSJ -

I
I

= ::;{SV

:S;;100°C

100

I
I
I
I
I
I

200

500

COLLECTOR VOLTAGE (V)

Saturation Voltages

D.C. Current Gain
200
lell, - 5
100

z

~

...
~

1-125° C

50

,.

-

25°C

~~,

::> 20

"cJ

!I--

ci 10

",

~

,

-- ,

_55°C

r-

"..... ,

.."!:i
w

~oC
-j

>

I

0.2

ls60c

r:: ..

r-

-

2
0.1

-

0.1

VeE-IOV
VeE =3V

,....

=25°C
0.5

0

~~

VBE~T~ :::::1'

55°C

~

4-

55°C

./ ./

V / I'

-

....

....... 1-" /\CElSATI
"/

f-'" ....

.05
0.2
Ie -

0.5
COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX {7l11l,.326'6509 • TELEX 95-1064

0.1

10

0.5

0.2
Ie -

4-496

10

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

UMTIOO8 UMTIOO9

Switching Time, VCEX 1m)
Test Circuit

Eslb Test Circuit
+'OV

200V

•

R _ 200V
lIe

R'=¥"BI=112
,

0.211

FOR RESISTIVE SWITCHING,
L = 0, UNCLAMPED

:6Jl .
- - 4V

~-IIII-- VeE clamp

+I07Vn

R,

LJ

~

L

1511

ADJUSTP.W.
TO OBTAIN
3A PEAK Ie

P.W. =25"S

SOD

-4V

Turn-Off Time

Turn-On Time
1000

1"- . . . .

500

........
t,
200

'in
r::

td

;100

.....

..

.5
w 0.5

I..

::;

"

so
0.2

r

10
0.1

vee - 200V
le/l,=5
VBe (off) = SV
TJ=25°C
0.2
Ie -

0.5
I
2
5
COLLECTOR CURRENT (A)

UNITRODE CORPORATION - 5 FORBES ROAD
LEXINGTON. MA 02173 - TEL. (617) 861-6540
TWl< (710) 326-6509 - TELEX 95-1064

200V

Vee

'in

"~

;::

20

......

~

:;

;::

t,

I"
TJ

'"

0.1

t,

leiS

= 25°C
...... 1-'

.05
10

0.1

4-497

0.2
Ie -

0.5
COLLECTOR CURRENT (A)

10

PRINTED IN U.S.A.

UMTIOll
UMTI012

POWER TRANSISTORS
15A, 500V, Fast Switching, High ES/b
Silicon NPN Mesa

FEATURES
• Rise Time: 0.4I'S} Ic lOA
• Fall Time: 0.41'S
• High Second Breakdown Energy: 6000I'J
• Low Saturation Voltage
• Collector Emitter Voltage: up to 500V
• Peak Collector Current: 30A
• Key Parameters characterized at lOO'C

DESCRIPTION
These high voltage glass passivated
power transistors combine fast
switching, low saturation voltage and
rugged Eslb capabil ity. They are
designed for use in off-line power supplies, high voltage inverters, switching
regulators, ignition systems and
deflection circuits.

=

ABSOLUTE MAXIMUM RATINGS
UMT10ll

UMT1012

Collector Emitter Voltage, VCEV ........................................................................................................................................... 400V................................. 500V
Collector Emitter Voltage, VCEO (SUSI .................................................................................................................................. 300V.................................400V
Emitter Base Voltage, VEBO ......................................................................................... ................................ ........................... 9V.................................... 9V
Collector Current, Ic continuous ..................... ..................................................
.....................
........ 15A.................................. 15A
Collector Current, Ic peak .............................................. ...................................
..........................
.............. 30A ...................................30A
Base Current, IB continuous .................. ~.........................
..................... ..............................
....... lOA.......
.................. .10A
Power Dissipation, 25'C Case ..............
. .................... .......................
.... 175W .............................. 175W
Derating Factor ................ ........................... .......
.........................
.......... 1.0W/'C......
..1.OW/'C
Operating and Storage Temperature Range.
.. .. ............ ..
.......... '" .....
............. -65 to 200'C.

MECHANICAL SPECIFICATIONS
NOTE:
Leads may be soldered to within
1/16"

UMT1011

time exposure is less than 260'C
for 10 seconds.

F

~EtE
e D

6-79

UMT1012

TO-204AA (TO·3)

of base provided temperature·

I

J

~.tH
I

A

M

eI'

J-~

7

B
BASE

c

EMlnER

D

E
F

G

L

H

J
K
L
M

ins.
875 MAX.
135 MAX
250- 450
312MIN.
038-.043 OIA
.188 MAX RAO.
1.177-1.197
.655- 675
205-.225
.420- 440
525 MAX. RAO.
.151- 161 OIA.

4-498

mm.
22.23 MAX.
3.43 MAX.
6.35 11.43
7.92 MIN.
097 109 OIA
4.78 MAX. RAO
29.90-30.40
16.64-17.15
5.21-5.72
10.67 1118
13.34 MAX. RAO.
3.84-409 OIA .

~UNITRDDE

UMTlOll UMTl012
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
Symbol

UMTlOll
MIN.
MAX.
12
60

UMTlO12
MAX.
MIN.
12
60

Test Conditions

Units

Test
D.C. Current Gain (Note 1)

hFE

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCE{"'I

-

1.0

-

1.0

V

Ic = lOA, I, = 2.0A

Collector Saturation Voltage,
TC= 100·C (Note 1)

VCE{"'I

-

2.0

-

2.0

V

Ic = lOA, I, = 2.0A

Collector Saturation Voltage
(Note 1)

VCE{,a'l

-

S.O

-

S.O

V

Ic = lSA, I, = 3.0A

Base Saturation Voltage (Note 1)

V8E {,a'i

1.6

-

1.6

V

Ic = lOA, I, = 2.0A

Base Saturation Voltage,
TC= 100·C (Note 1)

V'E {,.'I

-

1.6

-

1.6

V

Ic = lOA, 18 = 2.0A

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO {SU'I

300

-

400

-

V

I c =0.1A,1 8 =0

Collector-Emitter Sustaining
Voltage
TC= 100·C (Note 2)

VCEX{SU'I

350

-

450

-

V

Ic = 8.0A, L = 180"H
18• = 182 = 2.0A
VCE clamp = rated VCEX {ml

Emitter-Base Cutoff Current

lEBO

-

1

rnA

-

-

-

3.0

-

1

1.0

-

-

3.0

3.0

-

-

-

-

3.0

180

360

180

360

pF

6

24

6

24

MHz

Collector Cutoff Current

IcEV

Collector Cutoff Current,
Tc = 100·C

IcEV

Collector Cutoff Current,
Tc = 100·C

ICER

Output Capacitance,
Common Base

Cobo

Gain-Bandwidth Product

Fr

Energy Second Breakdown
(unclamped)

Es/b

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

td
t,

t,
tf

Inductive Switching Speeds
Tc = 100·C
Storage Time
Fall Time

ts
tf

Thermal Resistance,
Junction-to-Case

ReJc

6

6

30

Ic = S.OA, VCE = 2.0V
Ic = lOA, VCE = 2.0V

30

1.0

-

rnA
rnA
rnA

VE,=9V
VCE = 400V, V8E = -1.5V
VCE = SOOV, V8E = -1.SV
VCE = 400V, V'E = -1.5V
VCE = SOOV, V'E = -1.SV
VCE = 400V, R8E = SOO
VCE = SOOV, R8E

=sao

Vca = 10V, f = 1 MHz
VCE = 10V, Ic = O.SA, f = 1 MHz

6000

-

6000

-

"J

Ic = lOA, V8E {offl = -4V
L = 120"H unclamped

-

.OS
0.4
4.0
0.4

-

"S

-

.05
0.4
4.0
0.4

Ic=lOA
VCC= 200V
18• = 182 = 2.0A
V8E {ofij =5V

-

4.0
0.4

-

4.0
0.4

"S

1.0

-

1.0

·CIW

Ic = lOA, L = 180"H
18• = 182 = 2.0A
VCE clamp = rated VCEX {ml

Notes:
1. Pu{se width = 250115; duty cycle :51 %.
2. Susta.ning Voltage. Measured at a high current point where collector·emitter voltage is lowest. Current pulse length'" 50115; duty cycle :5 1%.
Voltage clamped at maximum collector·emitter voltage.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

4-499

PRINTED IN U.S.A.

•

UMTlOll UMTl012

Forward Bias Safe Operating Area

Power Derating
100

" "r\.

:"~-~I-'~~~~~~I~I~I

t'....

~

1,\

80

0:

0

.
"
.

60

'"0

40

t3

"-

"'.s-

~J

z

i=

0:

~

;;)

AT DESIRED OPERATING VOLTAGE,

DASH LINES ON SOAR CURVES ARE EXTENSIONS CW

DISSIPATleN LIMITj fOft

PUJtIJOSES

o

o

2.0

0:

1.0

lMPERrURE r"ATING

I--+--+I-+-+-H~I-HI--+I-\
'_t--bU::!~::ITt-It-0t-12H

A~4=L~;m=I~=I~~d:t+4~~l'\==~~~~r\~rr=U~~tlT!~J.~~i

'\

!S'C SOAR CURVE

u

~

,

Dt:RAT~ DISSI~"'.'\

TION CURRENT LIMIT AND Is ~ CURRENT LIMIT FROM

4.0

u

~O

20

5
!Z

"'k
P.W. 1\ P.W.
I> \IOmS 1\ ImS
~+~::e~~t:+1~~+=t:=t::j::m:t:j
Power
\r\
"i
DiSSiPatlon_Hrt++++_~-1--+---1I-H+++-l
Limiled I
1\

'"

""'- ......

~

~~

....
Z

'"0:0:

i'...

~ ,''-,
>--:O~S·
~

......... D.C.1'-.

10

..... ~~/"" .
~
1",1"~o

.2~T+e-~+·2-S.+cL-+~++H~~~.,~-+~,~++H

'\

40
80
120
160
Tc - CASE TEMPERATURE ('C)

r--f'-t--t-I+-++t~\i\-\I--+-t-+++tH

.1

200

t::::Jt:::±::±:±:±±t±±I:::±fdl::±:±±t:l±J

.04

20

10

50
100
200
500
VeE-COLLECTOR VOLTAGE (V)

1000

Reverse Biased Safe Operating Area
40

VIE
20

I

/'

5
IZ

4.0

0:
0:

~

....
....
0
u

~SV

I III

UMTlOll

1.0

II

0.4

/

/

~

::> 2.0
u
0:

=

I

~=I,,=111

10

III

(off)

Tc'; 100'C

~

/

JM~IOI2

1 0.2

.JI

.1
.04

10

20
50
500
100
200
VCEX 1...1- COLLECTOR VOLTAGE (V)

1000

Saturation Voltages

Current Gain
500

1111

I

lell, = 5

III

~

g
z

0

ss.lc

I--

!:i

2S'
0.5 ~

-

200

II
~7

~
,.- VII 1"'1

z

<

VCE=5V
100

"....

100'C

Z

III

0:
0:

~
0:

50

f--- I--IOO'C

::>

!;( 0.2
III

0.1 1--100'C

I

IV~ V

~

..::

~

.05 r-r==t-: 5S'C
0.2
0.5
5
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

20

~~js.
~

10

2S'C
10

5
0.2

20

4·500

~

25'C

u

~ ~~

::>

~~

~

2
5
10
0.5
I
Ie-COLLECTOR CURRENT (A)

20

PRINTED IN U.S.A.

UMTlOll UMTl012

Resistive Turn·Off Time

Resistive Turn·On Time
10

1000

500

'\ ,

~ ~
200

...oS
III

100

1OO'C

"-

rt- f--

~

5.0

2S'":C

2S'C-

....

t,

;;;;;;;':OO·C

......

.....
..... .....

.... 1-"

2.0

I

'"

....

"-

'U

........ "'-

:l!

::;

.3 1.0

2S'C

;:

t.

1OO'C

50

III

::;

1;;;IIIIIIII ~

i=

.5

,~

/

.......
Vcc = 250V
20

B,-S

111--1121
10

.2

-;:~

B,=51

111 --1 12

.5
2
10
5
Ie-COLLECTOR CURRENT (A)

.2

~

~

t,

."

I

.1

20

l00'C

1'-0..

Vee -25OV
.2

1

.5

5
Ie - COLLECTOR CURRENT (A)

Switching Time, VeEX (.."
Test Circuit

10

20

Eslb Test Circuit
+10V

200V
1201'H

R _ 200V
L-

Ie

R.=¥,I,,=1
82
,
FOR RESISTIVE SWITCHING,
L=O

7'J}s

VeE clamp

R,

+:n

3011

ADJUST P.W.
TO OBTAIN
lOA PEAK Ie

SOil

P.W.=2SI'S
-4V

-

UNITRODE CORPORATION· 5 FORBES ROAD
LEXING,TON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4·501

-

PRINTED IN U$A

•

POWER TRANSISTORS

UMT1203
UMT1204

3 Amp, 500V, Fast Switching
Silicon NPN Mesa

FEATURES.

OESCRIPTION

•
•
•
•
•
•

These high voltage triple diffused glass
passivated power transistors, in a plastic
TO-220AB package, combine fast switching,
low saturation voltage and rugged Est.
capability. They are designed for use in offline power supplies, high voltage inverters,
switching regulators, deflection circuits,
motor controls and solenoid/relay drivers.

Collector Emitter Voltage: up to 500V
Peak Collector Current: 5A
Rise Time: ~ 1.OI'S t t l - 2A
Fall Time: ~ O.7",s f a cKey Parameters characterized at l00'C
Economical Plastic Molded Construction

ABSOLUTE MAXIMUM RATINGS
UMT1203

UMT1204

Collector Emitter Voltage, VCEV .
............... ....................................................................
........... 400V.........
.... 500V
Collector Emitter Voltage, VCEO (SUS) ..
....................... .....................................
...........300V ..................................400V
Emitter Base Voltage, VEBO ................. .
..............................................................
.............7V......................................7V
Collector Current, Ic continuous
.......................
......................................................
...............3A......................................3A
Collector Current, ICM peak .....
.....................
........................................................
...............5A. ..................................... 5A
Base Current, 18 continuous
........................................................................................................................... .lA..................................... .lA
.....................
................................................................................................... 40W ................................... 40W
Power Dissipation, 25'C Case
Derating Factor ................. .
.............................................................
.... O.32W/.C .........................O.32W/'C
Operating and Storage Temperature Range
..................................................................................... -65 to 150'C ....................... .

MECHANICAL SPECIFICATIONS
UMTl203, UMTl204

SEATING
PLANE

DIM

F

MILLIMETERS
MIN
MAX
14.23
15.87
9.66 10.66
3.56
4.82
0.51
1.14
3.531
3.733

TO-220AB

INCHES
MIN
MAX
0.560
0.625
0.380
0.420
0.140
0,190
0.020
0.045
0.139
0.147

r-I-;';-"'G-+_r-,;,;,?-,t-i;'3.:..~"'.+~~~

f-r--.-.'c.~--+-.,c;,~-.,3'-8p~~=,6:-+' o.~ ~
!---c-

12.70

14.27

0.500

1.14

1.77

0045

0070

N

4.83

5.33

0.190

1- 02iil

'.54

3.04

0.100

0.120

2.04
1.14

2.92

0.080

1.39

0.045

0.055

6.85

0.230

0.270

K

PIN 1. BASE

2. COL.LECTOR
3. EMITTER

4 COLLECTOR

r-o-

5"

4177A

4-502

0.562

0.115

~UNITRDDE

UMTl203 UMTl204
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

UMTl203
MIN.
MAX.

UMTl204
MIN.
MAX.

Test Conditions

Units

hFE

12

60

12

60

Ic = 1.0A, VCE = 3V

hFE

7

3S

7

3S

Ic = 2.0A, VCE = 3V

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage
(Note 1)

VCEI ••,)

-

1.2

-

1.2

V

Ic = 2.0A, Is = O.4A

Collector Saturation Voltage,
Tc = 100'C (Note 1)

VCEI..,)

-

1.S

-

1.S

V

Ic = 2.0A, Is = O.4A

Collector Saturation Voltage
(Note 1)

VCEI ••,)

-

3.0

-

3.0

V

Ic = 3.0A, I, = O.7SA

Base Saturation Voltage (Note 1)

VSE 1'.'1

-

1.3

-

1.3

V

Ic = 2.0A, Is = 0.4A

Base Satu ration Voltage,
Tc = 100'C (Note 1)

VSE I'.')

-

1.S

-

loS

V

Ic = 2.0A, Is = 0.4A

Collector-Emitter Sustaining
Voltage (Note 2)

VCEolsu.1

300

-

400

-

V

Ic =O.lA

Collector-Emitter Sustaining
Voltage
Tc = 100'C (Note 2)

VCEXI •••(

350

-

450

-

V

Ic = 2.0A, L = SOO"H
I" = IS2 = 0.4A
VCE clamp = rated VCEX I'.')

Emitter-Base Cutoff Current

IESO

Collector Cutoff Current

I CEV

Collector Cutoff Current,
Tc = 1oo'C

I CEV

Collector Cutoff Current,
Tc = 100'C

ICER

Output Capacitance,
Common Base

Cobo

Gain-Bandwidth Product

Fr

Energy Second Breakdown
(unclamped)

Eslb

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

td
tr
t.
t,

Inductive Switching Speeds
Tc = 100'C
Storage Time
Fall Time

t.
tf

Thermal Resistance,
Junction-to-Case

RSJC

-

-

1

1

-

O.S

O.S

2.S

-

-

-

2.S

3.0

-

3.0

-

-

-

mA
mA
mA
rnA

Vy =7V
VCE = 400V, VSE = -l.SV
VCE = SOOV, V'E = -l.SV
VCE = 400V, VSE = -l.SV
VCE = SOOV, VSE = -1.SV
VCE = 400V, R = 500

-

-

35

100

35

100

pF

6

30

6

30

MHz

80

-

80

-

"J

Ic = 2.0A
lSI =0.4A
L = 40"H unclamped

-

0.1
1.0
4.0
0.7

-

0.1
1.0
4.0
0.7

lIS

Ic = 2.0A
Vcc = 200V
lSI = IS2 = 0.4A
VSE lof~ = SV

-

4.0
0.9

-

-

4.0
0.9

-

3.12

-

3.12

I'S

VCE = 500V, R = 500
Vea = lOV,f =1 MHz
VCE = 10V, Ic = 0.3A, f = 1 MHz

Ic = 2.0A, L = SOO"H
I" = I" = 0.4A
VCE clamp = rated VCEX I'.')

'C/W

Notes:
1. Pu Ise width = 2501'S; duty cycle ,;;1%.
2. Sustaining Voltage. Measured at a high current point where collector·emitter voltage is lowes!. Current pulse length '" 501'S; duty cycle:;; 1%.
Voltage clamped at maximum collector·emitter voltage.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX 1710) 326-6509 • TELEX 95·1064

4-503

PRINTED IN U.S.A.

•

UMTl203 UMTl204

Forward Bias Safe Operating Area

Power Derating
100

1'1..

1\

$
I-

Z

UJ

""-

DISSIPATION
LIMITED

a:
a:

:l
0

'\IV
~iJ~~
.. 1'\
~OC'I

-:>,~

III

UJ

..J
..J

0

Te

;::

0.2

_u

1\. \

\

CURVES APPLY BELOW
RATED VeEO

I

"

UJ

\

40

Z
OJ

ISIb LIMITED

1\

20

:l

AT DESIRED OPERATING VOLTAGE,
DERATE DISSIPATION CURRENT I

U

LIMIT FR10M

-LlM!T AND Is~ CURRENT

2S'iSOAAtRVE

20
50
100
200
Ve, - COLLECTOR VOLTAGE (V)

j'.,

I

\

a:
a:

o

.05
10

'"

I-

ISIb LIMITE
5

I

PURPOSES

\.

0

"

;~~E::~~~~~:U~~~::!~~~Gl~

i'-

i=
«
a:

\ \ \.

0.1

DASH LINES ON SOAR CURVES ARE

1\

60

<.!l
Z

",

"

= 25'C

\

I0

, ,

I-

80

0

,

0

0

~

\

a:

:~,

'"

a: 0.5
0

~ ........

,I 11N.'1,. 1

500

o

40
Te -

I

'"

ISSIPATION
LIMITED

\

80
120
160
CASE TEMPERATURE ('C)

200

Reverse Biased Safe Operating Area

I
§:

I-

--

I-

Z

UJ

a:
a:
:J
u
a:
0 0.5

1

1

1

1

\ 1\

\ \

UMTl204
-UMTl203

\
\

\

IU
UJ
..J
..J

0
0

I

I
I

I

1,,=0.4A
0.2 I--Te = 100'C

I
I
I

_u

0.1
I

.05
10

20
V eEX " ..1-

50

100

500

200

1000

COLLECTOR VOLTAGE (V)

Saturation Voltages

D.C. Current Gain

le/l.= 5

I
i....o"

Vae (uti

55'C

~

"'<.!l
~
0

0.5

::::::: ~ '/

25'
lSO'C

'/

>

VeE flatl

0.2

SO'C

0.1

.05
.05
Ie -

COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4-504

...-/

~ ~/

V
V

_55'

0.1
Ie -

0.5
0.2
COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

UMT1203

Switching Time
Test Circuit

UMT1204

Es/b Test Circuit
+10V

125V
125V
RL=~

L

R.=¥,laL=I BZ

•

0.211

FOR RESISTIVE SWITCHING,
L=O

t--III--v eE clamp

+308V n

:6~

.J

L

3011

ADJUST P.W.
TO OBTAIN
2A PEAK Ie

-4V
P.W.=25/LS

5011

-4V

Resistive Turn-On Time

Resistive Turn-Off Time

2000
Vee = 200V
1000

IB!

=
TJ

500

'"
E.
:;; 200

UJ

;::

,~

1"-

"-

100

t.

tSl =:

leIS

= 25'C

-

=
=

r-- -I-

r----

..........

-

....3

V

....

:;;

0.5

;::

~

0.2
Vee

50
0.1

0.1
Ie -

.05
.05

0.2
0.5
COLLECTOR CURRENT (A)

UNITRODE CORPORATION - 5 FORBES ROAD
LEXI NGTON, MA 02173 - TEL. (617) 861-6540
TWX (710) 326-6509 - TELEX 95-1064

=

200V

= 25'C
0.1

0.2
Ie -

4-505

-

/

v

181 -= '82= 'cIS
TJ

20
.05

t,--

0.5

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

•

POWER TRANSISTORS

UMT2000

15A,450V NPN Mesa

FEATURES
•
•
•
•

DESCRIPTION

Collector Emitter Voltage: 850V
Peak Collector Current: 20A
Storage Time::; 800ns } at Ic = lOA
Fall Time::; 70ns

Thesll high voltage, multiple layer
. epitaxial, glass passivated power
transistors combine fast switching, low
saturation voltage and rugged secondbreakdown capability. They are designed
for use in off-line power supplies, high
voltage inverters and switching regulators.

ABSOLUTE MAXIMUM RATINGS
Collector Emitter Voltage, VCEV .................................................. 850V
Collector Emitter Voltage, VCEOI.u.1 .............................................. .450V
Emitter Base Voltage, VESO ........................................................ 6V
Collector Current, Ic continuous .................................................. 15A
Collector Current, ICM peak (Note 1) .............................................. 20A
Base Current, IB continuous ..................................................... lOA
Base Current, IBM peak .......................................................... 15A
Power Dissipation, 25°C Case .................................................. 175W
100°C Case ................................................ 100W
above 25°C, derate linearly ................................. 1WrC
Operating and Storage Temperature Range .......................... -65°C to +200°C
Thermal Resistance, Junction to Case, R9JC .................................... l"C/W

NOle: 1. Pulse Test - Pulse Width = 5ms; Duty Cycle :5 10%

MECHANICAL SPECIFICATIONS
NOTE:
Leads may be soldered to within
1f16" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

UMT2000

F

~WE
e D

4/82

I
G

A
B

M
-

!

11\ .I. .

j jH

G)

J-

'i?
K

C
BASE
EMlnER

0

N

G

E
F
H

L

J
K
L
M
N

INCHES

MILLIMETERS

.875 MAX.
135 MAX.
.250-.043 DIA.
.312 MIN.
.038-.043 OIA
188 MAX. RAO
1.177-1.197
.655- 675
.205-.225
.420-.440
.525 MAX. RAO.
.151-.161 DIA.
.190-.210

22.23 MAX .
3.43 MAX.
6.35-11.43
7.92 MIN .
097-1 09 OIA .
478 MAX RAO.
29.90-30.40
16.64- 17.15
5.21 5.72
10.67-11.18
13.34 MAX. RAO .
3.84 4.09 OIA.
4.83-5.33

4·506

TO·204AA (TO·3)

~UNITRODE

UMT2000
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
TEST

SYMBOL

UNITS

TEST CONDITIONS

MIN.

TYP.

MAX.

450

-

-

V

VeEv = 850V, VaEloff) = 1.5V

Off Characteristics
Collector Emitter Sustaining Voltage

VCEO(sus)

Ie = 100mA, la = 0, L = lOmH

Collector Cutoff Current

ICEV

-

-

0.25

mA

Collector Cutoff Current
Te = 100°C

ICEV

-

-

2.5

mA

VeEv = 850V, VOEloffi = 1.5V

Collector Cutoff Current
Te = 100°C

leER

-

-

1.5

mA

VeE = 850V, ROE = 500

Emitter Cutoff Current

lEBO

-

-

1.0

mA

VEO = 6V, Ie = 0

On Characteristics (Note 1)
Collector Emitter Saturation Voltage

VCElsatJ

-

V

Ie = 5A, 10 = 0.5A

VCEIs8tl

-

-

2.5

Collector Emitter Saturation Voltage

3.0

V

Ie = lOA, 10 = lA

Collector Emitter Saturation Voltage
Te = 100°C

VCElsatl

-

3.0

-

V

Ie = lOA, 10 = lA

Base Emitter Saturation Voltage

VBElsat)

-

-

1.5

V

Ie = lOA, la = lA

Base Emitter Saturation Voltage
Te = 100°C

VSElsaU

-

1.5

-

V

Ie = lOA, 10 = lA

DC Current Gain

hFE

5.0

-

-

Cobo

-

-

400

pF

Veo = lOV, IE = 0,
f test = 1.0kHz

ton
t,
tf

-

220
900
150

-

ns
ns
ns

Ie = lOA
Vee = 250V
101 = lA
102 = 2A, Ro = 1.60

t,
tf

-

500
40

-

-

ns
ns

Ie = lOA
Vee = 250V
101 = lA
102 = 2A, Ro = 1.60
VOEloffl = 5V

-

650
30
50

1500
150
200

ns
ns
ns

Ie = lOA
101 = lA
VOEloff) = 5V
VeEIPk) = 400V

850
30
70

-

ns
ns
ns

Ie = lOA
101 = lA
VOEloff) = 5V
VeE'Pk) = 400V

Ie = l5A, VeE = 5V

Dynamic Characteristics
Output Capacitance
Switching Characteristics
Resistive Switching Speeds
Turn on Time
Storage Ti me (Note 2)
Fall Time (Note 2)

Storage Time (Note 2)
Fall Time (Note 2)

Inductive Switching Speeds
Te= 100°C
Storage Time
Fall Time
Crossover Time
Te= 150°C
Storage Ti me
Fall Time
Crossover Ti me

t"
t"
te
t"
tf,
te

-

-

-

-

-

-

-

Notes: 1 Pulse Test - Pulse Width = 300#5, Duty Cycle 

'"

~050
>25040

"'~
1

Te =

ztc

--:::::: f::::: ~

'>

~~

~

L

<.!)

~

~ 1.0

;22;:'- :::..--I-~ ~e
1e ~

20

'"~O.70
>-

'C

~
,;,

0.50

~030

0 .30

t= ~~oc

--

8020

~

~

>

0.15
015

LO

050

2.0 30

007
0.05
0.15

50 70 10 15

05

Ie-COLLECTOR CURRENT (A)

Te = 100'C

;;'
<.!)

>-

~

............

~

'":::J

§
'"~

~

u

~

U

"
1

10

20

5.0

2.0

10

15

1ms

~

r-- t-Te= 25'C

\
1\

\

\

.2 010

~

_._ Bondmg Wire Limit
_

_

Thermal Limit

Second Breakdown Limit

005

V", = 5.0V
1.0

10

'"l1

dc

I

~

05

,

8

\\

5.0

02

50

20

'"~050
~

\\

30

Te = 25'C

lOps""""

~

'"
u

f3f = 5

I I

10

1',

5.0

20

~

.,

10

Te = k5'C

V

~

/

Maximum Forward Bias
Safe Operating Area
20

I

z

L

~

VL

Ie-COLLECTOR CURRENT (A)

DC Current Gain
50

~

~

-

> 0.10

0.20

t~ 11~0'C""" ~

1'\

~

002
20

10

50

Ie-COLLECTOR CURRENT (A)

10

20

30

50 70 100

200 300 450

Ve,-COLLECTOR-EMITTER VOLTAGE (V)

Power Derating
100

~

::''"u

::

80

'\

~

60

Thermal(~

'">=z

g
"'"

'\
1\.

Operating

r\.

40

'\

~
~

20

40

80

120

Te-CASE TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4·508

""

160

200

PRI~TED

IN U.S.A.

UMT2000
TYPICAL DYNAMIC CHARACTERISTICS

--

Typical
Storage Time

Transient Thermal Response
6 -0.5

-~

"'"

AjP'"

~~

~~

5000

r7'

ZIII=J,h

3000

K-

~1000

!w

I

r-r-.

II

_/.f,y

_12A

700

~ 500

-.;~.

fBI' -

7A

o

..7

~ 300

/

L

u-

~ 200

t==~~·C-

0.05

10'

10'

10 '

Vo< = 20V

100

d=tp/T ~

10-2
10 '

=~

-;;;

q,:s.~

/

192

2000

1.5

20

3.0

50

70

10

15

Io-COLLECTOR CURRENT (A)

Collector Current Fall Time

Inductive Switching Measurements

1000

I~

g 500
~
....

./

............

-'

~ 200

....
z
lI!
0:

100

::l
<.l
0:

o

....

~

"'"

1'0..

""

~ 1,-\

182 - 2A

-

v"

90%l a1

"

-

r--t==~~·C

10
15

lO%VcE(Pkl

I,

1,-1

20

-

1,/

~.>.

50

8
ok

='"

,/

~"""+-

~I.. f~t,,

10/ I-- f--I .. -

.L

.......

I

90%V,,(p ) 1\ 90%1,(pk)

./

,0

300

.......

\r-

-

__ I"~

r1~"" r-.....
2%1
0

Icpk

f---

/

Vee = 20V

i\...../
2.0

3.0

50

70

10

15

I,-COLLECTOR CURRENT (A)

TIME

Crossover Time
1500
1000
1,,=0_
500
c

,.:;:; 300
;:: 200

15
>
Sl

~

V

r--.."

,/

'~

'r--...,

~ 100

1,,=2A=

<.l

I
."

IS2 - 7 A _

50

20
15

r-t~~~·C
Vee =20V
15

20

30

5.0

7.0

10

15

I,-COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

4·509

PRINTED IN U.S.A.

POWER TRANSISTORS

UMT2003

30A, 400V, NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•

These high voltage, multiple layer
epitaxial, glass passivated power
transistors combine fast switching, low
saturation voltage and rugged second·
breakdown capability. They are designed
for use in off·line power supplies, high
voltage inverters and switching regulators.

Collector Emitter Voltage: 850V
Peak Collector Current: 60A
Storage Time ~ 3ps } at Ie = 20A
Fall Time ~ O.8ps

ABSOLUTE MAXIMUM RATINGS
Collector Emitter Voltage, VeEV .................................................. 850V
Collector Emitter Voltage, Ve.o,,"s' .......... , ................................... .400V
Emitter Base Voltage, V.BO ........................................................ 7V
Collector Current, Ie continuous .................................................. 30A
Collector Current, leM peak ...................................................... 60A
Base Current, IB continuous ...................................................... 8A
Base Current, IBM peak .......................................................... 30A
Power Dissipatiorl, 25°C Case .. : ............................................... 250W
Junction Temperature. " ................................... , " ..........•... +200°C
Thermal Resistance, Junction to Case, R.Je ............................... :: ..

o.rc/w

MECHANICAL SPECIFICATIONS
UMT2003

NOTE:
Leads may be soldered to within
'A... of base provided temperature·
time exposure is less than 260'C
for 10 seconds.

F

~anE
C 0

I
G

j

A
B

M

L~

~\~.
~ I'
J-

~

'K

C

BASE
EMITTER

0
E

N

G

F
H
J

L

K
L
M
N

INCHES
875 MAX.
. 135 MAX
.250-.043 DIA.
.312 MIN
.057-.063
188 MAX. RAD.
1177-1.197
655-.675
205-.225
.420-.440
.525 MAX. RAD.
.151 161DIA
190 .210

TO-204AA (TO-3)

MILLIMETERS
22.23 MAX
343 MAX .
6.35-11.43
7.92 MIN .
1.45-1.60DIA
478 MAX RAD.
2990-30.40
16.64-17.15
5.21-5.72
1067-1118
13.34 MAX RAD
384-409DIA
483-5.33

[1::J]
4/82

4-510

_UNITRODE

UMT2003
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
TEST

SYMBOL

UNITS

MIN.

TYP.

MAX.

400

-

-

V

7

-

30

V

TEST CONDITIONS

Off Characteristics
Collector Emitter Sustaining Voltage

VCEOIsusJ

Emitter Base Voltage

VEBO

Ie = 0.2A. la = 0
L = 25mH
Ie = ~A. la = O.lA

Collector Cutoff Current
Te = 25°C

leEx

-

-

0.4

mA

VeE = VeEX
VaE = -2.5V

Collector Cutoff Current
Te = 125°C

ICEX

-

-

4

mA

VeE = VeEx
VaE = -2.5V

Collector Cutoff Current
Te = 25°C

leER

-

-

1

mA

VeE = VeEx
RaE $ 50

Collector Cutoff Current
Te = 125°C

leER

-

-

S

mA

VeE = VeEX
RaE $ 50

Emitter Cutoff Current

IESO

-

-

2

mA

VEa = 5V. Ie = 0

-

1.5

V

Ie = 20A. la = 4A

3.5

V

Ie = 30A. la = SA

1.6

V

Ie = 20A, la = 4A

On Characteristics (Note 1)
Collector Emitter Saturation Voltage

VCEtsatJ

Collector Emitter Saturation Voltage

VCEtsaU

Base Emitter Saturation

VeElsat)

-

Gain-Bandwidth Product

h

-

5

-

MHz

Output Capacitance

Cobo

-

500

-

pF

VeE = lOV, f = IMHz

Resistive Switching Speeds
Turn On Time
Storage Time
Fall Time

ton
t,
tf

-

-

0.55
1.5
0.3

1
3
O.S

ps
ps
ps

Ie = 20A
Vee = 150V
la1 = -182 = 4A

Inductive Switching Speeds
T, = 25°C
Storage Time
Fall Time

t,
tf

-

-

3.5
O.OS

-

-

ps
ps

Ie = 20A, la'end' = 4A
La = 50pH
Vee = 300V, -VBE = 5V

Is

-

-

5
0.4

ps
ps

Ie = 20A, IB'end' = 4A
La = 1.5pH
Vee = 30V, -VBE = 5V

Dynamic Characteristics
VeE = 10V, Ie = lA
f = IMHz

Switching Characteristics

Inductive Switching Speeds
T, = 100°C
Storage Time
Fall Time

tf

Note: 1. t, = 300/ls; duty cycle"; 2%.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

4-511

PRINTED IN U.S.A.

•

UMT2003

Transient Thermal Response

DC and Pulse Area
~300

-

~,

'\ ~~~
f'., ~

.'1.1\

g 100

I~ \,

fZ

"'
C<

'"
"
::J

C<

~::l

\

10

o

"

1

1',

10

.<~

\0'7"

... 'oS'

~,~

"

\

\

/

rV__~____r-__~~_

~

T CAS" 25°F
- - DC OperatIon

-I SIn,IO i"ln
1

~
....',

f\ I'i~\'
f\'
1\ ,\

.2

001

:~; 'f<.-

1.... ,;;;-

10-2
20

-,--:-6_=_I'_/T-:-':,;11_',:-1,-:--:,

, - :_ _-,-:-_ _-,-::_ _

10

100 200

40

2

10

1

10°

10 1

102 tp(ms)

Ve• - COLLECTOR·EMITTER VOLTAGE (V)

Forward Biased Safe
Operating Area (FBSOA)

g
~

30

1--1--+--+--/

C<
C<

::J

"o

C<

~
8

20r--+--+--t---

1

.2

lOr--+--t--t--

°0~-~--2~00--'--~400

600

700

The shaded area can only be used for turn on.
Ve• - COLLECTOR·EMITTER VOLTAGE (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

4-512

PRINTED IN U.S.A.

POWER TRANSISTORS

UMT13004
UMT13005

4A, 700V, Fast Switching,
Silicon NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•
•
•

These high voltage glass passivated power
transistors, in a plastic TO·220AB package,
combine fast switching, low saturation
voltage and rugged Es/. capability. They are
designed for use in off·line power supplies,
high voltage inverters, switching regulators,
deflection circuits, motor controls and
solenoid/relay drivers.

Collector Emitter Voltage: up to 700V
Peak Collector Current: SA
Rise Time: ,,:;;.7#S} t I - 2A
Fall Time: ":;;0.9#5 a cKey Parameters characterized at 100'C
Economical Plastic Molded Construction

ABSOLUTE MAXIMUM RATINGS
UMT13DD4

Collector Emitter Voltage, VCEV

600V..............

. ........................................................... ..............................................

UMT1300S

.. ... 700V

~~:~t~~O~;:i~~~t~~!~a~:~v~E~.(S~~I.:::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::: ............... :::::::.::::: ....~O~~::::::::::: ....... ::::::::::::::~~
Collector Current, Ic continuous .......................... .....................................................
.. ............... 4A. ....................................4A
Collector Current, ICM peak ......... ................................
............................
..............................
.. ............SA....
.. ........ SA
Base Current, 18 continuous .....................
...................... .................................
...2A......................
...2A
Power Dissipation, 25'C Case .........
................................. .... 75W.........
.. ........ .75W
Derating Factor ...................................... .
....... .............
. .. 0.59W/'C.........................0.5CJW/'C
Operating and Storage Temperature Range.
..................................................
. -65 to lS0'C ...... .

MECHANICAL SPECIFICATIONS
UMT13004, UMT13005

SEATING
PLANE

TO·220AB

A

I

I ~-

L1
I
-1

---l

S~CT

R

I

Jl

A-A

JI~I
It~L
II
OJ N

6-79

G

PIN:.

~~~~ECTOR

3. EMITTER

4 COLLECTOR

K

12.70

L

1.14
4.83

N
Q

-

1427

0.500

533

'1.77'- -O.G45

1.14

1.39

0190
0100
0080
0045

5.B5

6.85

O~30

254
2.04

'"

2.92

4·513

0025
0562
0070
0210
0120

~
0.055
O.27()

[1JJ UNITRDDE

•

UMT13004 UMTl3005

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test
D.C. Current Gain (Note 1)

Symbol

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCE('.'I

Collector
} T - 25'C
Saturation Tc ;;;; 100'C
Voltage
c
(Note 1)

hFE

8

VCE (..,)

Collector Saturation Voltage
(Note 1)

VCE('.'I

Base Saturation Voltage (Note 1)

VaE (••,)

Base
} T - 25'C
Saturation Tc;;;; 100'C
Voltage
c
(Note 1)

UMT13004
MIN.
MAX.
60
10

VaE (.af)

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO (.u.1

Emitter-Base Cutoff Current

IEao

Collector Cutoff Current

ICEV

Collector Cutoff Current,
Tc =100'C

IcEv

Output Capacitance,
Common Base

Cobo

Gain-Bandwidth Product

FT

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

td
tr
t.
t,

Inductive Switching Speeds
Tc= 100'C
Storage Time
Fall Time (t,; + ttV>

t,
t,

Thermal Resistance,
Junction-to-Case
Thermal Resistance,
Junction-to-Ambient

UMT13005
MAX.
MIN.
10
60

-

.5
0.6
1.0

-

1.0
1.2
1.6
1.5

-

300

-

1
1

-

5

-

-

.5

Ic = LOA, la = 0.2A

V

Ic = 2.0A, la = 0.5A

1.0

V

Ic = 4.0A, la = LOA

1.2

V

Ic = LOA, la = 0.2A

V

Ic = 2.0A, la = O.5A

Ic=10mA

1.0

1.6
1.5

400

-

V

-

1

mA

-

mA

1

-

S

6S typo

-

Ic - 2.0A, VCE - SV
V

0.6

-

65 typo
4

Ic - LOA, VCE - 5V

40

8

40

4

Test Conditions

Units

mA
pF

-

MHz

-

0.1
0.7
3.S
0.9

-

0.1
0.7
3.5
0.9

4.0
0.9

,uS

1.67

-

4.0
0.9

RaJc

-

1.67

'C/W

RaJA

-

62.5

-

62.5

'C/W

,uS

VEa =9V
VCE = 600V, VaE = -1.5V
VCE = 7ooV, VaE = -1.SV
VCE = 600V, VaE = -1.SV
VCE = 700V, VaE =-1.5V
Vca = 10V, f = 1 MHz
VCE = 10V, Ic = .SA, f = 1 MHz
Ic =2.0A
Vcc = 12SV
lal = la2 = O.4A
VaE (0111 = SV, P.W. = 2S,uS
Ic = 2.0A, L = SOO,uH
lal = 0.4A, VaE (o'fl = SV
VCE clamp = rated VCEX (.u.)

Notes:
1. Pulse width = 250pS; duty cycle :51%.
2. Sustaining Voltage. Measured at a high current point where collector· emitter voltage is lowest. Current pulse length .. 50pS; duty cycle :5 1%.
Voltage clamped at maximum collector·emitter voltage.

Typical
Inductive Load
Switching Performance
Ie

Amps
0.5
1.0
2.0

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

TJ
·C

t,
I'S

t f•
nS

25
100
25
100
25
100

1.8
1.2
1.0
1.5
1.2
1.7

180
240

4·514

160

220
180
230

tfi

nS
20
30
21
30
25
35

PRINTED IN U.S.A.

UMT13004 UMT13005

Forward Bias Safe Operating Area

Power Derating
100

5.0

~

D.C. +--f...,c+-+''k++ 1mS

r\.

Z

UJIl:~U

~

~

~S

2.0

DISSIPATION ~
LIMITED-~

>-

""-

rTTJ

' ",

..... jUM,T 13OO

I

>Z

UJ
Il:
Il:

\

\

\

40

0

.2r-~~++~~[;-\~~rH~

so

20

100

200

500

1\\

AT DESIRED OPERATING VOLTAGE.
DERATE DISSIPATION CURRENT I
_LIMIT AND II'" CURAENT LIMIT FROM

U

o
10

I

........

20

:J

\

!

1\

Il:
UJ

IS/b

LIMITED"-\

.......

......... ~'b LIMITED

z
;::

"

.5

~~~E::~~~!~:U~':~~:!~~~GL~
PURPOSES

\

60

(!J

OASH LINES ON SOAR CURVES ARE

\

0

U

8
~

80

Il:

!d01'0~~Bi
UMT1300!
~

~ r-....
1\ ........

"-rOAR["'" I -I

o

40
Te -

1000

\~ISSIPATION
LIMITED

1-

1\

80
120
160
CASE TEMPERATURE ('C)

200

Ve,-COLLECTORVOLTAGE (V)

Reverse Biased Safe Operating Area

,

~

I
$:

Te -100'C

zUJ

V'E {offl - -5V

>-.

~

~

Il:
Il:

:J

U

Il:

0
>U

0.5
UMT13004 -

UJ
...I
...I

0
U 0.2

UMT1300S-

I

~

0.1

.05
10

100

200

500

20

50

Ve," 1"'1 -

COLLECTOR VOLTAGE (V)

1000

Saturation Voltages

D.C. Current Gain
200

I II

100

lsW

I

I

le/l,

0-

~

"!:,'0j

I

I
Isd.c

III

b;::::

VBE{SAT)

f-- --;25'
lSO'C

UJ
(!J

I

= 10

0.5 f--

>

V-

0.2

ISO'
0_1

r=-.

::25'

::::.. . . . V

ii'

V'
~

VeE (SAT)

SS'C

.05
.02
Ie -

COLLECTOR CURRENT (A)

UNITRODE CORPORATION,S FORBES ROAD
LEXI NGTON. MA 02173 ' TEL. (617) 861-6540
TWX (710l 326-6509 ' TELEX 95-1064

.05
Ie -

4-515

0.1

0.2

0.5

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

•

UMT13004 UMT1300S

Resistive Turn-On Time
2000

Resistive Turn-Off Time

Ve~ ~ 200~

1000

I"
TJ

I-

=
=

ie lS

i"

25°C

~

f-r-.
f""

'"
oS
~ 200

;::

r--- ~

...

_V

~

w 0.5
:;
;::

I'\.

l'

100

t,

~

0.2
Vee

50
0.1

~

i"

i"

0.1

0.2

.05
.05

0.5

V

200V

f"...:

i,.....---'

ie l5

25°C

TJ
20
.05

t,l-->-

I"-

500

0.1

0.2

0.5

ie - COLLECTOR CURRENT (A)

ie - COLLECTOR CURRENT (A)

Switching Time
Test Circuit
125V

R _125V
l-

R.

Ie

= ¥,

I

IiI

= In

FOR RESISTIVE SWiTCHING,

L=O
+6

V

nU_

0-_

+-...~- VeE ciamp

4V

P.W. =25#5

UNiTRODE CORPORATION - 5 FORBES ROAD
LEXiNGTON, MA 02173 - TEL. (617) 861-6540
TWX (710) 326-6509 - TELEX 95-1064

4-516

PRINTED IN U.S.A.

UMT13006
UMT13007

POWER TRANSISTORS
SA, 700V, Fast Switching,
Silicon NPN Mesa

FEATURES

DESCRIPTION

•
•
•
•
•
•

These high voltage glass passivated power
transistors, in a plastic TO-220AB package,
combine fast switching, low saturation
voltage and rugged Es/. capability. They are
designed for use in off-line power supplies,
high voltage inverters, switching regulators,
deflection circuits, motor controls and
solenoid/relay drivers

Collector Emitter Voltage: up to 700V
Peak Collector Current: 16A
Rise Time: .::;; l.OIlS} t I - 5A
Fall Time: .::;; 0.7,,5 a cKey Parameters characterized at lOO'C
Economical Plastic Molded Construction

ABSOLUTE MAXIMUM RATINGS
UMT1300&

UMT13007

Collector Emitter Voltage, VCEV ..................... ..................................................................
...... ............... ......... 600V..
..... .700V
Collector Emitter Voltage, VCEO (SUS) ......... ....................• ......................................................
. ..........••... 300V......
............ 400V
Emitter Base Voltage, VEBO ............................................ .............................................................
........... SV................................. 8V
Collector Current, Ic continuous ................................................................................................
................................. SA..................................... SA
Collector Current, ICM peak ........................................................................................................
.. ........... .l6A ................................ 16A
Base Current, 18 continuous
......................................................................................
.. ........ 4A ................................... 4A
Power Dissipation, 25'C Case
....... ...................
....................................................................
.. sow............................ .. SOW
Derating Factor ................
.....................................................................
.. ................. O.641W/'C.......
.. ... O.641W/'C
Operating and Storage Temperature Range .........
............................
.. .......... -65 to 150'C...... ..

MECHANICAL SPECIFICATIONS
UMTl3006, UMTl3007

SEATING
PLANE

MILLIMETERS

DIM

A

1

0
---1

6·79

¥#-

I

MAX

INCHES
MIN
MAX

15.87

0.560

9.66

10.66

3.56

4.82

0.51

1.14

0.380
0.140
0.020

3.531

3.733

2.29

2.79

6.35
A

0.38

S~CT A A

R

MIN
14.23

oJ~'EGL

PIN 1. BASE

2. COLLECTOR
J EMITTER
4 COLLECTOR

06'

12.70

14.27

1.14

1.77

'"

5.33

2.54

2.04
1.14

58.

0139
0.090

I

0.625

I

0.420
0.190

0.045
0.147

0.110
0.250
0.015,0.025

1.39

0500
0.562
0045 I 0.070
0.190
0.210
0.100
0.120
0.080
O.l1S
0.045
0.055

6.85

0.230

'.0<
2.92

4-517

TO·220AB

0.210

~UNITRDDE

•

UMT13006 UMT13007
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Symbol

Test

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage
(Note 1)
Collector
Saturation Te= 25'C
Te =l00'C
Voltage
(Note 1)
Collector Saturation Voltage
(Note 1)
Base Saturation Voltage (Note 1)
Base
Saturation Te =2S'C
Te = 100'C
Voltage
(Note 1)
Collector-Emitter Sustaining
Voltage (Note 2)
Emitter·Base Cutoff Current

-

1.0

VeE!••'1

-

1.5
2.0

-

3.0

VCEI..,)
V'E(H')
VIE ("')

VeEO(.usl
lEBO

Collector Cutoff Current,
Te lOO'C

leEV

=

UMT13007
MIN.
MAX.

40
30

VeE ('.'1

leEv

Output Capacitance,
Common Base
Gain-Bandwidth Product
Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Switching Speeds
Te 100'C
Storage Time
Fall Time (tf; + ttv)
Therma I Resistance,
Junction-to-Case
Thermal Resistance,
Junction-to·Ambient

8
6

hFE
hFE

Collector Cutoff Current

=

UMT13006
MIN.
MAX.

1.6
1.5

-

300

-

400

-

1
1.0

-

1.2

S

-

Cobo

1l0typ.

Fr

4

40
30

8
6

-

-

-

4

Ic=2.0A, VCE=SV
Ie = S.OA, VeE = 5V
V

Ie = 2.0A, I, = 0.4A

1.5
2.0

V

Ie = S.OA, I, = 1.0A

3.0

V

Ie = a.OA, I, = 2.0A

1.2

V

Ie = 2.0A, la = 0.4A

1.6
1.5

V

Ie = S.OA, I. = 1.0A

-

V

le=10mA

1

mA

-

mA

1.0

-5

mA
pF

-

MHz

I'S

td
tr
t.
tf

-

0.1
1.0
3.0
0.7

-

0.1
1.0
3.0
0.7

t.
tf

-

2.3
0.7

2.3
0.7

I'S

1.56

'C/W

62.S

'C/W

RaJC

-

1.56

-

RaJA

-

62.5

-

Test Conditions

1.0

1l0typ.

-

Units

VEI =9V
VeE = 6OOV, VaE =
VeE = 7ooV,VIE =
VeE = 600V, VIE =
VCE = 7ooV, V.E

-1.5V
-1.SV
-1.SV
-l.SV

=

=10V, f =1 MHz
VeE =lOY, Ie = 0.5A, f = 1 MHz
Vea

le=S.OA
Vee = 125V
la, = 18Z=lA
VaE(ofij =SV
Ie = S.OA, VIE (ofij = SV
1.,=lA
VeE clamp = rated VeEl( ('usl

Notes:

1. Pulse width = 250#5; duty cycle :51%.
2. Sustaining Voltage. Measured at a high current pOint where collector·emitter voltage is lowest. Current pulse length'" 501'5; duty cycle :5 1%.
Voltage clamped at maximum collector·emitter voltage.

Typical
Inductive Load
Switching Performance
Conditions:

V clamp at rated VCEX fsus}
(refer to RBSOA curve)
VBI; loff}

=-sv

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1p64

Ie
Amps

TJ
·C

t,

t f•

tIl

pS

nS

nS

3.0

25
100

.45
.575

70
100

10
20

5.0

25
100

.475
.60

25
45

10

8.0

25
100

.525
.625

20
45

10
15

4-518

4

PRINTED IN U.S.A.

UMT13006 UMT13007

Power Oerating

Forward Bias Safe Operating Area
100

20
10 I
D.C.

~

~ OmS ~ mS

...z

~

BO

\

0::

'"'"
:>

"

'"

"\

Dissipation
Limited- ~

'"

g

I'.

";::z

MTl30?'i\;

1

8
I

0.5

DASH LINES ON SOAR CURVES ARE

40

'"'"

20

" ......... i"'\

OJ

nInIII

Tc 25'C
ES APPLY B L
RATED Vc""

10

1\

\.

100

o

500

200

•

Is,b LIMITED

\

AT DESIRED OPERATING VOLTAGE.
OERATE DISSIPATION CURRENT I
r-LIMIT AND III~ CURRENT LIMIT FROM

u

so

20
VCE -

:>

\.

I!

PURPOSES

1\

I

"
'"a
...z

~~~E:i~~~!~:u~~~::~~~~L~

"'~

60

0::

I" Limited

...l

...u0
""-

UMTl301J6o

Power I'\.

u

_0

~ i'..
r\

~o~s

\?ISSIPATION
LIMITED

"'I 1"'" I I I

1\

so••

o

40
Tc -

COLLECTOR VOLTAGE (V)

BO
120
160
CASE TEMPERATURE ('C)

200

Reverse Biased Safe Operating Area
40
20

g

...z

'"'"
:>

10
SA

5
4

'"u

a'"
t;

OJ
...l

UMTl3006

..J

au
I

.l>

.4
.2
.1

.04
10

so

20

100

200

SOO

1000

VCEX I"'I-COLLECTOR VOLTAGE (V)

D.C. Current Gain

Saturation Voltages

200

5

I
VCE

I

= SV

100

'cll.=5

2

z

<
Cl

...

100'C

'"'"
:>

'"u

~

SO

Z

2S'C

-I

.-

20

ri

-

""~

5S'C

ci 10

I

~

-55'C

OJ

"
!:i
a
>
z
a

~,

0.5

5'

~

V
V

0.1

Ic -

0.2
0.5
2
COLLECTOR CURRENT (A)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) B61-6540
TWX (710) 326-6509 • TELEX 95-1064

O'~

VV

If)

0.1

/

100'C

'"
!;(

5

~""

55'

:> 0.2

~

.c

.05

f.--;

VIE (MIt)

Cl

~

~V

:--

25'C

VcEflolltl

.05

5

.05

4-519

0.1

2
0.2
0.5
'e-COLLECTOR CURRENT (A)

5

PRINTED IN U.S.A.

UMT13006 UMT13007

Resistive Turn-Off Time

Resistive Turn-On Time
1000

10
Vee
lell,

100'C

SOD

......

.
.s
...

:;

"t-..

5

1/

V

25'C'

V
t.

2

'iii'

t--r--

'-

...

100

1oo'C

..... 1'- .......

.;;

ts

:;

;:

;:

t.

SO

25'C
0,5

~
0.2

20
Vee= 125V
le/l,=5
10
0.1

125V
5

0.2

0.5

2

0.1
0.1

10

Ie-COLLECTOR CURRENT (A)

"::::

100'C

i-"t,

-

.....J.... /

J.
25'C
I

0.2
0.5
1
2
Ie - COLLECTOR CURRENT (A)

10

Switching Time
Test Circuit
125V
125V
RL=~

R,=¥,I,,=IIZ

•

FOR RESISTIVE SWITCHING,

L=O

+--'1-- Ve• clamp

R,

P.W.=25/tS

UNITRODE CORPORATION - 5 FORBES ROAD
LEXINGTON. MA 02173 - TEL. (6171 861·6540
TWX (710) 326·6509 - TELEX 95-1064

4-520

PRINTED IN U.S.A.

POWER TRANSISTORS

UMT13008
UMT13009

12A, 700V, Fast Switching,
Silicon NPN Mesa

FEATURES

DESCRIPTION

• Collector Emitter Voltage: up to 700V
• Peak Collector Current: 24A
• Rise Time: ~ 1.0I'S} t I - 8A
• Fall Time: ~ 0.7"S a c• Key Parameters characterized at 100'C
• Economical Plastic Molded Construction

These high voltage glass passivated power
transistors, in a plastic TO-220AB package.
combine fast switching, low saturation
voltage and rugged Es/. capability. They are
designed for use in off-line power supplies,
high voltage inverters, switching regulators,
deflection circuits. motor controls and
solenoid/relay drivers.

ABSOLUTE MAXIMUM RATINGS
UMT13008

Collector Emitter Voltage, VCEV
Collector Emitter Voltage, VCEO (SUSI .
Emitter Base Voltage, VEBO .................................................•
Collector Current, Ic continuous.
Collector Current, ICM peak ...
Base Current, la continuous.
Power Dissipation, 25'C Case.
Derating Factor ......... .
Operating and Storage Temperature Range

UMT13009

.................. 600V.
........... 700V
. ........... 300V ........................ 400V
. ................... 9V......
............. 9V
..12A.
. ..... 24A.
.. 6A....

...l2A
.......... 24A
.......6A

lOOW..

.. lOOW

........ 0.80W/'C................... 0.80W/'C
.. -65 to 150'C .. .

MECHANICAL SPECIFICATIONS
UMT13008 UMT13009
DIM

•

B
C
D
F

G

H
J

PIN 1. BASE
2. COLLECTOR

3 EMITTER
4 COLLECTOR

6-79

·
L
N

Q

•

S
T

MILLIMETERS
MAX
MI'
14.23
15.87

....'.56

0.51
3.531

'.29

10.66
4.82
1.14
3.733
2.79

INCHIS
MI.
MAX

0....
0.310
0.140
0.020
0.139
0.090

12.70
1.14

I."
'.54

3.04
1.14
!1.I5

0.6.
14.21
1.77
5.33
3.04
2.92
1.39

6.15

4-521

0.625
0....
0.190
0.045
0.147
0.110

0.500

0.250
0.025
0.562

0.045

I 0,070

0.190

0.210

6.35

0.31

TO-220AB

0015

0.100
0.0••
0.045
0.210

0,120

0.U5
0.055

0.270

~UNITRDDE

II

UMT13008 UMT13009
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Test
D.C. Current Gain (Note 1)

hFE

D.C. Current Gain (Note 1)

hFE

Collector Saturation Voltage
(Note 1)

VCE Is.f)

Collector
Saturation
Voltage
(Note 1)

VCE (..,)

Tc =2Soc
Tc = 100'C

Collector Saturation Voltage
(Note 1)

VCE(s.')

Base Saturation Voltage (Note 1)

VaE( .. fl

Base
Saturation
Voltage
(Note 1)

UMTl3OO8
MIN.
MAX.
8
40

Symbol

Tc =25'C
Tc = lOO'C

Collector-Emitter Sustaining
Voltage (Note 2)

VCEO Isus)

Emitter-Base Cutoff Current

IEao

Collector Cutoff Current

ICEV

Collector Cutoff Current,
,Tc = lOO'C

ICEV

Output Capacitance,
Common Base

Cabo

Gain-Bandwidth Product

Fr

Resistive Switching Speeds
Delay Time
Rise Time
Storage Time
Fall Time

td
t,
ts
tf

Inductive Switching Speeds
Tc= lOO'C
Storage Time
Fall Time (t f ; + ttv)

ts
tf

Thermal Resistance,
Junction-to-Case
Thermal Resistance,
Junction-to-Ambient

30

6

VaE(s.')

UMTl3OO9
MIN.
MAX.
8
40

-

1.0

6

-

1.0

V

Ic = 8.0A, la = 1.6A

3.0

V

Ic = 12.0A, la = 3A

1.2

V

Ic

2.0

-

3.0

1.6

-

-

loS

-

loS

300

-

400

-

1

-

S.O

-

4

-

-

1.5
2.0

V

=S.OA, la = LOA
Ic =8.0A, la = 1.6A

-

V

Ic = lOmA

1

mA

1.6

1.0

5.0
180 typo

180typ.

-

4

=S.OA, la = LOA

Ic

loS

-

=SV

Ic = 8.0A, VCE = SV
V

-

1.0

Test Conditions

Ic - S.OA, VCE

30

-

1.2

Units

mA
mA
pF

-

MHz

VEa =9V
VCE = 600V, VaE = -1.SV
VCE = 700V, VaE = -l.SV
VCE = 600V, VaE = -1.5V
VCE - 700V, Vae _ -1.5V
Vca

=lOV, f = 1 MHz

VCE = 10V, Ic = O.SA, f = 1 MHz

0.1
1.0
3.0
0.7

-

0.1
1.0
3.0
0.7

/,S

I c =8.0
Vcc 125V
la, = la2 = 1.6A
VaE (offl = 5V

2.3
0.7

2.3
0.7

/,S

Ic 8A, VaE (offl = 5V
la, = 1.6A
VCE clamp = rated VCEX (sus)

1.25

°C/W

62.5

'C/W

RSJC

-

1.2S

-

RSJA

-

62.5

-

=

=

Notes:

1. Pulse width = 250pS; duty cycle ,;;1 %,
2. Sustaining Voltage. Measured at a high current pOint where collector-emitter voltage is lowest. Current pulse length'" 50pS; duty cycle';; 1%,

Voltage clamped at maximum collector-emitter voltage.

Typical
I nductive Load
Switching Performance
Conditions:

Ie
Amps

Ic
=5

3.0

I"

V clamp at rated VCEX

(susl

(refer to RBSOA curve)
VeE

(offl

=-sv

5.0
8.0
12.0

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-522

TJ
°C
25
100
~

100
25
100
25
100

t,

t,.
nS

t"
nS

0.5
0.85
0.65
0.90
0.72
.092
.70
.78

100
130

10
14
10
12
12
28
25
110

pS

40
50

60
65
70
70

PRINTED IN U.S.A.

UMT13008 UMT13009

Forward Bias Safe Operating Area
40

I

20

~S

10

D.C.

$
....
Z

a::
a::
::J
u
a::

"

4.0

UI

1

-"

"(!l

J"...

Te - 25'C

.10

'\

'\

UMT 3008

~ I.-

1\

PURPOSES

""

tTIIl
50

....z

t--

UI

a::
a::

20

::J

'\

t---LlMIT AND

100

IS/~

CURRENT LiMIT

25'1 SOAR JURVE I

~

o

•

I,. b LI M ITED

,
FirM

\j'SSIPATION
LIMITED

1\
200

40
80
120
160
T - CASE TEMPERATURE ('C)
e

500

200

f".-

1\

AT DESIRED OPERATING VOLTAGE.
DERATE DISSIPATION CURRENT

U

o

1

\

\

40

0

_'\

3OO9

20

UI

~

'\
I,I,,~~

.04

;::
«
a::

~
~

.20

10

60

~~~E~ES~~~!~:U~~~;::~~~GL~

\

0

IU

«

DASH LINES ON SOAR CURVES ARE

Z

1\

I" LIMITED

S

80

~ l'...
1\ ~

a::

'\

1.0

.40

~

~

I'-

1.....

..J
..J

u

r-....

20#r

i"-r-,.

LlMITEp-j---< ~

UI

0

:-... I".

1mS

DISSIPATION~

2.0

~
u

Power Derating
100

VeE-COLLECTOR VOLTAGE (V)

Reverse Biased Safe Operating Area
15
12
10

$
....

Z

UI

a::
a::
::J
u
a::

~

..J
..J

2.0

l\

VIE {off} ~-5V
Tc ~ 100°C

1\

IBI =2.5A

1.0

0

u
.5

1

-"

UMTl3008
UMTl3009

.2

.1S
10

so

20

I
100

200

SOO

1000

v eEX ,,,,,-COLLECTOR VOLTAGE (V)

200
100

z

;;:
<.!l

2S'C
0

1

tnT
-5S'C

U
U

c

VeE - 5V

'e ll,-5

IIII

IIII

J

~I

'1/

100'C

UI

a::
a::

Saturation Voltages

so

....Z
::J

D.C. Current Gain

fo"'"
0

I-

-='"

-

.~ I--'~

-55'C

V'E{sat)

~

k~

100'C

UI

~

r-..:~

!:i

I'

25'C

o. S

~

o

>

~ VII

0.2

IJiI.

S

2
.OS

~

0.1

0.2

O.S

10

o.

1

.05
.05

20

Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6S09 • TELEX 95-1064

rrJ

I;r-=

25'C

0.1

-"""

0.2

1ID~

VeE

(sat)

/'/ V

/-S5'C

.J,.-

10

O.S

20

Ie - COLLECTOR CURRENT (A)

4-523

PRINTED IN U.S.A.

UMT13008 UMT13009

Resistive Turn-Off Time

Resistive Turn-On Time
2000

1000

-

r--

f- Ve• = 125V
I

IIIIII

1- 1,,=1.,=

%

L

500

~ ~~

100

100'C ....

~

.

V lA
1/

~IBI

~
O'e,..

'"::;:;::

~~

r--

Irs

100'C i"'"

100'C

....... ~

II'

I,

"'25'C

0.1

U1
20
.20

I"

.3 0.5

25'C

0.2
50

2~ I........

I

~..."<1'

...

'"::E

t.~

VeE = 125V

oS 200 ~

;::

1ho·cl

I"-r-

2S"C

IJ

1\

.5
Ie - COLLECTOR CURRENT (A)

10

.05
.2

20

.5
10
Ie-COLLECTOR CURRENT (A)

20

Switching Time
Test Circuit
125V
125V
RL=~

Ra =¥,1 81 =IIZ

•

FOR RESISTIVE SWITCHING,

L=O

:6J}s

~"'--VCE clamp

R.

-4V
P.W.

=25~S

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4·524

PRINTED IN U.S.A,

POWER TRANSISTORS

UPTl11
UPT112
UPT113
UPT114
UPTl15

1 Amp, 150V, Planar NPN

FEATURES
• Collector-Base Voltage: up to l50V
• Peak Collector Current: 2A
• Turn-on Time: lOOns
• Turn-off Ti me: 250ns

DESCRIPTION
Unitrode power transistors provide a
unique combination of low saturation
voltage, high gain and fast switching. They
are ideally suited for power supply pulse
amplifier and similar high efficiency power
switching applications.

ABSOLUTE MAXIMUM RATINGS
UPT113

UPT112

UPT111

UPT114

.. 60V .................. SOV ..

Collector-Base Voltage, Vcao .
Collector-Emitter Voltage, VCEO
Emitter-Base Voltage, VEao
D.C. Collector Current, Ic
Peak Collector Current, Ic
Base Current, I a

............. lOOV ....
GOV .. .
SOV .
5V .. .
..... 5V.
.. lA
.......... 1A.. .
. ... 2A
.... .... ... 2A.. .
0.5A ..
.0.5A ..

40V
.5V..
. lA....
........ 2A...
0.5A. .

UPT115

l20V ..
... lSOV
100V
100V ...
. SV
... SV .
....... lA ..
.1A
. 2A ..
........ 2A
O.SA .. ...... .... ...... O.SA

Power Dissipation
25'C Ambient
100'C Case
Thermal Resistance, 6 J _ C
Operating and Storage Temperature Range

.SSW.
.4W.
.. 2S'C/W
-6S'C to 200'C .

MECHANICAL SPECIFICATIONS
UPT111

---CoT:: 0 --;

r=r=~i
__ ~1iE
i
Af
-----

W ----- -.
I

--

---.-------

---

F

UPTll2

A
B
C

UPT113

UPT114

INCHES
335- 370
305-.335
240- 260

UPT115

TO-5

MILLIMETERS
851 940

775 851
609-660
3810 MIN

0
E

15 MIN

F

017 ±

G
H
J
K
l

200
100
031± 003
029- 045
100

010- 030

·g21

4-525

0254 0762
432 ±

g~~

508
254
787't 076
736 114
254

~UNITRDDE

•

UPTl11 UPT112 UPTl13 UPT114 UPTll5
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Test

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Collector-Emitter Breakdown Voltage
(Note 1)
UPT111
UPT112
UPT113
UPT114
UPT115
Collector-Emitter Breakdown Voltage
(Note 1)
UPT1l1
UPT112
UPTll3
UPT114-5
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current, 150·C
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Product
Turn-on Time
Switching Speeds
Turn-off Ti me
Note: 1. Pulse Width _ 300

~s;

Symbol

Min.

Max.

Units

hFE
hFE

30
20

-

-

1.0
1.2

Vdc
Vdc

hFf'
VCE (sat)
VaE (sat)
BVCER

60
80
100
120
150

-

40
60
80
100

-

BVcEO

ICER
ICER
I ESO
Cob
fT
ton
toff

Vdc

= 0.5A, VCE = 5Vdc
= lA, VCE = 5Vdc
= 2A, VCE = 5Vdc
= lA, la = O.IA
= lA, la = O.1A
Ic = lOmAdc; RaE = lOOn

Vdc

Ic

!LAdc
mAdc
!LAdc
pf
MHz
ns
ns

VCE - rated BVcEO, RaE - lOOn
VCE
rated BVCEO' RaE
lOOn, T 150·C
VES
5Vdc
Vcs
10Vdc, IE 0, f
IMHz
Ic - O.IAde, VCE _ 5Vdc, f _ 10M Hz
Ic _IA

15 Typ.

-

-

10
1.0
50
40

-

-

50 Typ.
100 Typ.
250 Typ.

g

1

~

.5

....
z
0:

::>

.2

CJ
0:

~

I'\..

"-.

""-

.1

....

8.05

I'\..

"~

1
J TA=2~·C
Pulse Width = 1 ins

.01

l

=
=
=

500

D~~cle = 2.5%,-

z
;;:

"'X'"

"....z

=

=

= =

l>\.

ms~

~

0:

UPTlll
UPT1l2
UPT1l3
t-UPTlI4
t-UPT1l5

::>

TJ~Lc

,....--

200

f,--50

CJ

TJ = -SS·C

<5

~

c:i

I

20

.t
10

.005

VeE = SV

TJJS~ "-

100

....0:

I .02 Pulse Widlh = 1
Dut CYClj = 2i%

_u

= 10mAdc

D.C. Current Gain vs. Collector Current

" "-

D,C j

.J

Ic
Ic
Ic
Ic
Ic

duty cycle ,.2%.

Maximum Safe Operating Area
UPT111 -115

2

Test Conditions

--M
r---. ~
'\

5

10 20
50 100
VeE-COLLECTOR - EMITTER VOLTAGE (V)

.02

Switching Speed Circuit

.05
.1
.2
.5
Ie - COLLECTOR CURRENT (A)

+60V

GOIl

2SV

.0S~f

Jl
~-""""-'--"M
H

_ _- I

10~s

-4V
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

4-526

PRINTED IN U S.A.

UPT211
UPT212
UPT213
UPT214
UPT215

POWER TRANSISTORS
2 Amp, 150V, Planar NPN

FEATURES
• Collector-Base Voltage: up to l50V
• Peak Collector Current: 5A
• Turn-on Time: Bans
• Turn-off Time: 300ns

OESCRIPTION
Unitrode power transistors provide a
unique combination of low saturation
voltage, high gain and fast switching. They
are ideally suited for power supply, pulse
amplifier and similar high efficiency power
switching applications.

ABSOLUTE MAXIMUM RATINGS
UPT211

UPT213

UPT212

UPT214

UPT215

Collector-Base Voltage, VCBO .
. 6OV.....
....... 80V ...................... lOOV....
'" l2OV.. .
.... l50V
Collector-Emitter Voltage, VCEO .
40V . ..
60V .
SOV ........ ............... lOOV...
.... lOOV
. ... 5V..
5V.....
.............. 5V.........
.... 5V.........
....... 5V
Emitter-Base Voltage, VEBO .............. .
D.C. Collector Current, Ic .
M..
............ M.......
._M_
.. M_.
........ M
Peak Collector Current, Ic
5A.. ......... .........
5A
........... 5A ..... _._.... . .. 5A ..................... _. 5A
Base Current, IB .
. .... M M ............. _..... ~._...
.~
....... M
Power Dissipation
25°C Ambient .
...... 85W ..............................................................................
lOO°C Case
4W ...............................................................................
Thermal Resistance, 9 J _ C
.... 25°C/W ...........................................................................
Operating and Storage Temperature Range .................................... .
_65°C to 2000C .............................................................__ .

MECHANICAL SPECIFICATIONS
UPT211

-- C r

D

r=T"~I_iIE
1- -- . I..

I e- _ ...

1 ! __ ~ -'

..
F

A
B
C

-1

A

UPT212

BASE

D

UPT213

INCHES
335- 370
305- 335
240- 260
15 MIN

E

010- 030

F

O17±gg~

G
H
J
K

200
100
03l± 003

l

029- 045
100

4-527

UPT214 UPT215

TO-5

MILLIMETERS
851-940
775-851
609-660
3810 MIN

0254-0762
432 ±

g~~

5 08
254
787± 076
736 114

254

~UNITRODE

•

UPT211 UPT212 UPT213 .UPT214 UPT215
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Symbol

Min.

Max.

Units

hFE
hFE
hFE
Vcdsat)
VBE (sat)

30
20

-

-

-

1.0
1.2

Vdc
Vdc

Ic =
Ic =
Ic =
Ic =
Ic =

Vdc

Ie = 10mAdc; RBE = lOOn

60
80
100
120
150

Vdc

Ic

Test

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Collector-Emitter Breakdown Voltage
(Note 1)
UPT211
UPT212
UPT213
UPT214
UPT215
Collector-Emitter Breakdown Voltage
(Note 1)
UPT211
UPT212
UPT213
UPT214-5
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current, 150'C
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Product
Turn-on Time
Switching Speeds
Turn-off Time
Not.: 1. Pulse width

10 Typ.

BVCER

BVCEO

-

40
60
80
100

-

ICER
ICER
lEBO
Cob
fT
ton
toff

Test Conditions

10
1.0
50
40

lOmAdc

VCE = rated BV cEO , RBE = 1000
VCE = rated BVCEO ' RBE = lOon, T = 150'C
VEB = 5Vdc
VCB = 10Vdc, IE = 0, f = 1MHz
Ic = O.IAdc, VCE _ 5Vdc, f _ 10MHz
Ic=2A

/LAdc
mAdc
/!Adc
pf
MHz
ns
ns

70 Typ.
130 Typ.
300 Typ.

=

0.5A, VCE = 5Vdc
2A, VCE = 5Vdc
5A, VCE = 5Vdc
2A, IB = 0.2A
2A, IB = 0.2A

= 300 I'S; duty cycle ",2%.

D.C. Current Gain vs. Collector Current

Maximum Safe Operating Area
UPT211-215

, ,, '/
,',,, V
l"-,. ~

$

...

1

z

"'~

.5

::>

o

~

.2

~

.1

8

.05

I
_u

.02

f\...

A

K

f-Dt

"'-

= fms~

DUlY eye'i ~

tI

= 2.5%

VeE

=

5V

I

Pulse Width = Ims
Duty Cycle = 10%

200

r-

z

¢
TA = 25°C

~

100

"''~"

50

o

-- -

I

20

it

I--UPT213

-IT'~25'C

-

I'-..

~,~-5Jc ~ ~

~
UPT211
f--UPT212

y,

.01

.005

,Duty Cycle

f\...

Width

T,_IJ

Pulse Width = Ims

~

(A

puise

/

~

\

10

UPT214

!+--UPT215
5

125102050100
V,

E-

.05

.1
1<., -

COLLECTOR - EMlnER VOLTAGE (V)

.2
.5
COLLECTOR CURRENT (A)

Switching Speed Circuit
+60V

25V

.05~f

fl.,..............,.,.......
. . . . . . . . . . . . . -l
H
IQps

-4V

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-528

PRINTED IN U.S.A.

POWER TRANSISTORS

UPT311
UPT312
UPT313
UPT314
UPT315

2 Amp, 400V, Planar NPN

UPT321
UPT322
UPT323
UPT324
UPT325

DESCRIPTION
Unitrode high voltage transistors provide
a unique combination of low saturation
voltage, fast switching, and excellent gain.
They are ideally suited for off-line power
supply designs and other applications
where the increased voltage rating adds
to system reliability.

FEATURES
• Collector-Base Voltage: up to 400V
• Peak Collector Current: 3A
• Turn-on Time: 200 ns
• Turn-off Time: 800 ns

ABSOLUTE MAXIMUM RATINGS
UPT311
UPT321

UPT312
UPT3Z2

UPT313
UPT323

UPT314
UPT324

UPT315
UPT325

300V ........ ...... 350V .. .. ............ ...... 400V
250V .. ........ ........... . 300V ..
... 300V
..... 5V...
.. ........... 5V.
.. ......... 5V
2A....
....... 2A
........ 2A
.... 3A .................. 3A..
.. .. 3A

Collector-Base Voltage, VeBo
200V..
........ 250V .. .
. 150V .. .
. 200V.
Collector-Emitter Voltage, VCEO '
Emitter-Base Voltage, VEBO
.5V .................... 5V .. ..
D.C. Collector Current, Ie
.......... 2A. .
...... 2A ..
Peak Collector Current, Ic
.3A..
3A .....
.. 1A
.. 1A
Base Current, IB
Power Dissipation
25'C Ambient
lOO'C Case
Thermal Resistance, 8 J _ C .
Operating and Storage Temperature Range .

~..
UPT311-315

.. ..... lW ...
. lOW ...
.. lO'C/W
-65'C to 200'C

~...

~
UPT321-325

.. 2W ..
.J6W ..
. 6.7'C/W ....
-65'C to 200'C

MECHANICAL SPECIFICATIONS
UPT311

UPT312

A
B
C
0
E

UPT321

UPT313

INCHES
335- 370
305 335
240 260
15 MIN.
010- 030

F

017 ±

G
H
J
K
L

200
100

UPT322

UPT314

TO-5

MILLIMETERS
851 940
775-851
609-660
38.10 MIN

0254 0762

ggi

432 ±

g~l

508
254
787± 076
736 114
254

03l± 003
029- 045
100

UPT323

UPT315

UPT324 UPT325

TO-66

H
BASE

EMITTER

A
B

C
0
E
F
G
H

J
K
L
M

INCHES
MILLIMETERS
620 MAX.
1575 MAX.
.050 - .075
1.27 - 1.90
.250 - .340
6.35 - 8.63
.360 MIN
9.14 MIN .
.028 - 034 OIA
.711 .863
.958 - .962
24.33 - 24.43
570 - .590
14.47 - 14.98
145 MAX RAO.
3.68 MAX. RAO.
142 - .152 OIA. 3.60 - 3.86 OIA.
.350 MAX. RAD
889 MAX. RAD.
.190 - 210
4.82 - 5.33
093 - 107
2.36 - 2.72

4-529

~UNITRODE

•

UPT311 UPT~12 UPT313 UPT314 UPT315
UPT321 UPT322 UPT323 , UPT324 UPT325

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Symbol

Min.

Max.

Units

hFE
hFE
hFE
VCE (sat)
V8E (sat:
BVCER

30
10

-

-

Test

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Collector-Emitter Breakdown Voltage
(Note 1)
UPT311, UPT321
UPT312, UPT322
UPT313, UPT323
UPT314, UPT324
UPT315, UPT325
Collector-Emitter Breakdown Voltage
(Note 1)
UPT311, UPT321
UPT312, UPT322
UPT313, UPT323
UPT314-5, UPT324-5
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current, 150°C
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Product
Turn-on Time
Switching Speeds
Turn-off Time
Note: l. Pulse width

= 300 "s, duty cycle

-

300
350
400
BVCEO

-

1"'-

1

Z

~
II:

::>

o

Pulse Width::;: 1 ms

,2

II:

5

.05

/lAdc
mAdc
/lAdc
pf
MHz
ns
ns

~c ~ lODGe
DU~Y Cycle ==:; 10%
Pulse Width = 1 ms

1\

\

I

"- ~

g
~

~

Pulse Wid h=

o
II:
o

,2

i

Pulse Width

=

1 ms

>'\\

ms

D.C,

.1

I-

\~

z

~u .02

VeE -

COLLECTOR -

EMITTER VOLTAGE (V)

~LJ.c

-

o

-

_i, _ 5~·C--"'" ~

-~~

I--

o

veE == sv

-- ~J,=25~

.-

~ 50 I--

\

UPT321
UPT322UPT323
UPT324/325

.oI

100 200 300

100

"'II:

I

.005
SO

200

ci

UPT314/315
20

z

~

~

.005

500

~ l00'C

DU~Y Cycle= 10%

.5 Duly Cycle = 25%/"

II:

:>

fc

5 .os

UPT311
UPT312
UPT313

10

=
=

D.C. Current Gain VI. CoUector Current

o

,01

=
=
=

VCE
rated BVCEO' R8E
lOOn
VCE
rated BVCEO' RBE
lOOn, T = 150°C
VE8 = 5Vdc
VCB
10Vdc, 'E = 0, f = 1M Hz
Ic - 0.5Adc, VCE _ 5Vdc, f _ 10MHz
Ic _lA

Maximum Safe Operating Area

t;

o

~u,02

= lOmAdc

UPT321- 325

:~

D,C•. /
.1

Ic

",2%.

l\
" >1,\

.5 Duty Cycle = 25%

t

~

~

10
1.0
50
50
40 Typ.
200 Typ.
800 Typ.

UPT311-315

5

Vdc

-

150
200
250
300
ICER
ICER
I E80
Cob
fT
ton
torr

Vdc

Vdc
Vdc

-

200
250

Maximum Safe Operating Area

I-

10 Typ.
1.0
1.5

Test Conditions

= 0.5A, VCE = 5Vdc
=2A, VCE =5Vdc
=3A, VCE = 5Vdc
= 2A, 18 = 0.4A
=2A, 18 =O.4A
Ic = 10mAdc; R8E = lOOn

Ic
Ic
Ic
Ic
Ic

20

"i~

10

\

5

10 20
50 100 200 300
5
VeE - COLLECTOR - EMITTER VOLTAGE (V)

.03

.OS

.1
Ie -

.2

.5

1

2

3

COLLECTOR CURRENT (A)

Switchinl Speed Circuit

+100V

loon
2SV

.0,"1

Jl
. . . . . . ___~. . . . . . .--t
H
10~s

-sv
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

4-530

PRINTED IN U.S.A.

UPT521
UPT522
UPT523
UPT524
UPT525

POWER TRANSISTORS
3 Amp, 400V, Planar NPN
FEATURES

DESCRIPTION

•
•
•
•

Unitrode high voltage transistors provide
a unique combination of low saturation
voltage, fast switching, and excellent gain.
They are ideally suited for off-line power
supply designs and other applications
where the increased voltage rating adds
to system reliability.

Collector-Base Voltage: up to 400V
Peak Collector Current: 5A
Tu'rn-on Time: 200ns
Turn-off Time: 900ns

ABSOLUTE MAXIMUM RATINGS
UPT521

Collector-Base Voltage, VCBO .
Collector-Emitter Voltage, VCEO ..
Emitter-Base Voltage, VEBO .
D.C. Collector Current, Ic ......
Peak Collector Current, Ic
Base Current, 18 .
Power Dissipation
25'C Ambient .
100'C Case
Thermal Resistance, 8 J _ C .
Operating and Storage Temperature Range

250V ...
. 200V .
.5V..
.... 3A
........ 5A
.2A

....... 2A

UPT524

UPT523

UPT522

... 200V ..
.... 150V
........ ... 5V
......... 3A .. .
.5A

...... 300V ..
....... 250V ...
5V.
... 3A ..
... 5A .
2A

UPT525

........ 350V ....
..... 400V
..... 300V
........ 300V
5V
.. 5V .. .
3A .. . ..................... 3A
.... 5A
.. 5A ...
2A ......
.... 2A

.. .. 2W
... 25W

.. ...... 4'C/W
-65'C to 200'C

MECHANICAL SPECIFICATIONS
UPT521

UPT522 UPT523 UPT524 UPT525

TO·66

H

r-M'
B+i~
o

BASE
E.MITTER

INCHES
A
B

C
0
E
F

G
H
J
K
L

M

.620
050
250
360
.028
958
.570
145
. 142
350
190
.093

MILLIMETERS

MAX.
1575 MAX.
.075
127-190
- .340
6.35 8.63
MIN.
9.14 MIN.
- 034 DIA.
.711 .863
24.33 - 24.43
- .962
- 590
14.47 - 14.98
MAX. RAD.
3.68 MAX. RAD.
- .152 DIA. 3.60 - 3.86 DIA .
MAX. RAD.
8.89 MAX. RAD.
- .210
4.82 - 5 33
107
2.36 2.72

4-531

~UNITRODE

•

UPT521 UPT522 UPT523 UPT524. UPT525
ELECTRICAL SPECIFICATIONS (at 25"C unless noted)
Symbol

Min.

Max.

Units

hFE
hFE
hFE
Vc,(sat)
VSE (sat)
BVCER

25
10

-

-

Test

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain {Note 1)
Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Collector-Emitter Breakdown Voltage
(Note 1)
UPT521
UPT522
UPT523
UPT524
UPT525
Collector-Emitter Breakdown Voltage
(Note 1)
UPT521
UPT522
UPT523
UPT524-5
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current, 150"C
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Product
Turn-on Time
Switching Speeds
Turn-off Time
Nate: 1. Pulse width

10 Typ.

1.5

400

-

150
200
250
300

-

200
250
300
350
BVcEO

-

ICER
ICER
lEBO
Cob
fr
ton
toff

Vdc

Vdc

Ic

Vdc
Vdc

l.U

-

Test Conditions

=l.OA, VCE = 5Vdc
=3A, VCE =5Vdc
=5A, VCE = 5Vdc
=3A, I, =0.6A
=3A, Is =0.6A
Ic = lOmA(~; RSE = lOOn

Ic
Ic
Ic
Ic
Ic

10
1.0
50
120
30 Typ.
200 Typ.
900 Typ.

=10mAdc

=
=
=
=

/LAdc
mAdc
/LAdc
pf
MHz
ns
ns

=
=

VCE
rated BVCEO' RBE lOOn
VCE
rated BVCEO' RBE lOOn, T 150"C
VEB 5Vdc
Vcs
10Vdc, IE 0, f = 1MHz
Ic - 0.5Adc, VCE _ 5Vdc, f _ 10MHz
Ic - 3A

=

=

= 300 I'S; duty cycle :;;:2%.

Maximum Safe Operating Area

L
S
I-

1

~

.5

"

I.D.C.

~

~

g

.2

~

.1

8

.05

1
_u

"~l

..

Pulse Width _ 1 ms
Duty Cycle = 10%

Z

a:

)

D.c. Current Gain VI. Collector Current
500

Te=IOO·C

Pulse Width = 1 m~_
~~utyycle = 25%

-'"

z

1,\,\

200

~ 100
z

1\"

'"

a:

~
u

\

50

~

\

120

~~fJ-

.02

UPT523-

---

sv~

TJ~
TJ

-

2S·C

"

T,=-5~ '\..

.............

-.........

~ I\-

,

~

10

UPT524/52

.01

VeE =

5

.005
5

I
VeE -

10

20

COLLECTOR -

50

.05

100 200300

EMITTER VOLTAGE (V)

.5
.1
Ie - COLLECTOR CURRENT (AI

Switching Speed Circuit
+I00V

330

-sv
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-532

PRINTED IN U.S.A.

POWER TRANSISTORS

UPT611
UPT612
UPT613
UPT614
UPT615

5 Amp, 150V, Planar NPN

FEATURES

DESCRIPTION

•
•
•
•

Unitrode power transistors provide a
unique combination of low saturation
voltage, high gain and fast switching. They
are ideally suited for power supply, pulse
amplifier and similar high efficiency power
switching applications.

Collector-Base Voltage: up to lSOV
Peak Collector Current: lOA
Turn-on Time: 250ns
Turn-off Time: 550ns

ABSOLUTE MAXIMUM RATINGS
UPT&11

UPT612

Collector-Base Voltage, VCBO ..
60V ..
40V
Collector-Emitter Voltage, VCEO '"
Emitter-Base Voltage, VEBO ........
.5V .. .
D.C. Collector Current, Ic
.................... 5A .. .
Peak Collector Current, Ic
....... lOA ...
Base Current, IB
2A
Power Dissipation
25'C Ambient .
IOO'C Case
Thermal Resistance, 9 J _ C .
Operating and Storage Temperature Range

UPT613

UPT614

.... ....... SOY.
....... IOOV... ............ 120V....
60V
BOV
.... lOOV
5V .......................... 5V......
.. ......... 5V... ..

M
...

UPTB15

. .......... 150V
IOOV
5V

... M ......... M.........M

lOA..

....... lOA.

M.....

.... M..

. ...... lOA.

.......... M....

.......... lOA

......... M

. IW
5W ...
. . . 20'C/W ..
. -65'C to 200'C ...

MECHANICAL SPECIFICATIONS
UPT611

UPT612 UPT613 UPT614 UPT615

A
B
C

D
E

INCHES
.335- 370
305-.335
240- 260
15 MIN
010- 030

8g~

F

017

G
H
J
K
L

20D
100
031± 003
029- D45
100

±

4-533

TO-5

MILLlMtTERS
851-9.40
7.75-851
609-660
38.10 MIN.
0254 0.762
432

±

g~~

508
254
787± 076
736 114
254

~UNITRDDE

•

UPT611 UPT612 UPT613 UPT614 UPT615
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
Symbol

Min.

hFE
hFE
hFE
VCE (sat)

30
15

Test

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
UPT611-3
UPT614-5
Base Saturation Voltage (Note 1)
COllector-Emitter Breakdown Voltage
(Note 1)
UPT611
UPT612
UPT613
UPT614
UPT615
Collector-Emitter Breakdown Voltage
(Note 1)
UPT611
UPT612
UPT613
UPT614-5
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current, 150·C
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Product
Turn-on Time
Switching Speeds
Turn-off Time

= 300 ps,

Note: 1. Pulse WIdth

Max.

-

--

-

-

-

VSE (sat)
BVCER

1..0
1.5

Vdc
Vdc

1.5

Vdc

60
80
100
120
150

-

Vdc

Vdc

BVCEQ

-

40
60
80
100

-

ICER
ICER
lEBO

Cob
fr
ton
toll

1

::J

u

.5

0:

1=

~
a
u

I

u

.2

"
I""
1"'- 1"'I"
" I" '<
~

'\,

"" '""'1"'-

.1
.05
.02

= 10mAdc

=
=
=
=
=

I--

.01

=

=

VCE rated BVCEQ' RSE
lOOn, T 150·C
VES
5Vdc
VCS
lOVdc, IE 0, f
1M Hz
Ic 0.5Adc, VCE 5Vdc, f
10MHz
Ic 5A

= -=
=
=

D.C. Current Gain ys. Collector Current
500

~

0:

Ic

duty cycle ';2%.

I"
l:1

= 5A, Is = O.SA
= 10mAdci RSE = lOOn

1/CE = rated BV CEQ' RSE = 10011

,uAdc
mAdc
,uAdc
pf
MHz
ns
ns

10
1.0
50
120
40 Typ_
250 Typ.
500 Typ.

= lA, VCE = 5Vdc
= 5A, VCE = 5Vdc
= lOA, VCE = 5Vdc
= 5A, Is = O.5A

Ic

Ie

10

l;:

Ic
Ic
Ic
Ic

-

12 Typ.

Maximum Safe Operating Area

5

Test Conditions

Units

-

UPT611
UPT612
UPT613
UPT614/15

1
VeE -

~

~

5
10 20
COLLECTOR -

J

T,,:::: 2S"C

VeE
5V
TJ :::: 150"C

~ Duty Cycle ::::

2.5%,

200

z
;;:

........- Pulse Width ::::

1 ms
lr(""""

V-

CJ 100

Duty Cycle -

~
0:

10%, _ _ _ _
Pulse Width ::::

g;

1 ms

SO

u
U

Duty Cycle _

25%, _ _ _ _

ci

I

Pulse Width ::::
Ims_
D.C.

20

10

-

;:b

---

L--

.............
TJ

t\

--~"

== -55"C

5

50 100
EMITTER VOLTAGE (V)

.1

.2

1(. -

.5
COLLECTOR CURRENT (A)

~

\

10

Switching Speed Circuit
+60V

12n

SOV

son
100

-4V

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINqTON, MA 02173 • TEL. (6Vl 861-6540
TWX (7lQl 326-6509 • TELEX 95-.1064

4-534

PRINTED IN U.S.A.

POWER TRANSISTORS

UPT721
UPT722
UPT723
UPT724
UPT725

5 Amp, 400V, Planar NPN

FEATURES

OESCRIPTION

•
•
•
•

Unitrode high voltage transistors provide
a unique combination of low saturation
voltage, fast switching, and excellent gain.
They are ideally suited for off-line power
supply designs and other applications
where the increased voltage rating adds
to system reliability.

Collector-Base Voltage: up to 400V
Peak Collector Current: lOA
Turn-on Time: 2S0ns
Turn-off Time: 800ns

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage, VCBO
Collector-Emitter Voltage, VCEO
Emitter-Base Voltage, VEBO
D.C. Collector Current, Ic .
Peak Collector Current, Ic
Base Current, IB
Power Dissipation
2S"C Ambient
100"C Case
Thermal Resistance, 9 J _ C
Operating and Storage Temperature Range

UPT721

UPT722

UPT723

2ooV ...

300V.
2S0V

.. .... 5V ..
SA ...

2S0V.
200V ..
SV .
. SA ..

. lOA.

lOA..

. lOA

3A.

3A.

3A

ISOV.

... SV ..... .
. SA ... ..

UPT724

.350V
.... 300V
.... SV
SA ..

UPT725

400V
.300V

...... SV
lOA

3A ..

3A

2W
2SW
4"C/W
-6S"C to 200"C

MECHANICAL SPECIFICATIONS
UPT721

UPT722 UPT723 UPT724 UPT725

TO-66

H
BASE
EMITTER

A
B

C
D
E
F

G
H

J
K
L
M

INCHES
.620 MAX.
050 - 075
250 - 340
360 MIN
02B - .034 DIA
95B - .962
570 - 590
145 MAX. RAD.
152 DIA
142
350 MAX RAD.
190 - 210
093
107

4-535

SA

. lOA .....

MILLIMETERS
15.75 MAX
127 190
635 - B.63
9.14MIN
.711 - .B63
2433 2443
1447 149B
358 MAX RAD.
3.60 3 B6 DIA
BB9 MAX. RAD
4.B2 5.33
236-2.72

OJ] UNITRODE

•

UPT721 UPT722 UPT723 UPT724 UPT72S
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)

Test
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Collector-Emitter Breakdown Voltage
(Note 1)
UPT721
UPT722
UPT723
UPT724
UPT72S
Collector-Emitter Breakdown Voltage
(Note 1)
UPT721
UPT722
UPT723
UPT724-S
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current, lS0·C
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Ptoduct
Turn-on Time
Switching Speeds
Turn-off Time
Note: 1.

Pulse width

Symbol

Min.

Max.

hFE
hFE
hFE
VCE (sat)
VBE (sat)
BVCER

2S
10

-

Vdc

== lA, VCE == SVdc
== SA, VCE == SVdc
== lOA, VCE == SVdc
== SA, IB == 1A
== SA, IB == 1A
!-: == 10mAdc; RBE == 10011

Vdc

Ic

/lAdc
mAdc
/lAdc
pf
MHz
ns
ns

VCE == rated BVCEO' RBE == 10011
VCE == rated BVCEO ' RBE == 10011, T == 150·C
VEB == SVdc
VCB == lOVdc, IE == 0, f == 1MHz
Ic - O.SAdc, VCE - SVdc, f _ 10MHz

-

1.0
1.B

Vdc
Vdc

-

~

2S0
300
3S0
400
BlicEO

200
250
300

-

10
1.0
50
120
30 Typ.
250 Typ.
BOO Typ.

"\t\.
>-

2

~

1

0:

::>

"

~

== SA

D.C. Current Gain YS. Collector Current

Maximum Safe Operating Area

5

IC

= 300 ~s; duty cycle ,,2%.

10

Z

== 10mAdc

-

150

ICER
ICER
lEBO
Cob
fr
too
toll

Ic
Ic
Ic
Ic
Ic

-

STyp.

-

Test Conditions

Units

'"

T,I=

1"\

~

1

~u

.OS

~~::ec~~~~::~o!'J

"'0:

•

I

~ 100

~

I

Z

\~

~

"
~

D.C:~

I

UPT721UPT722 UPT123
UPT724/2S-

.02

.01

200

z
;;:

.2

~

loo.c-

10:;F~ t\.
Pulse Width = 1 ms
Duty Cyc'e =

..

500,--,..---,---,---.---.,.---,

1

5
V'E -

10

20

SO

so
20 1--1---+--+--1"~~+----i

10

S

100 200 300

I--I---+--+--+--'i"k-'rl
__
.2
.5
1
2
5
COLLECTOR CURRENT (A)

L-~

.1

COLLECTOR-EMITTER VOLTAGE (V)

J-_J-_L-_-U~~

'e -

10

Switching Speed Circuit

+'00V

25V

Jl
1--01

.10.'

10 pS

-4V

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4-536

PRINTED IN U.S.A.

POWER TRANSISTORS

UPTA510
UPTA520
UPTA530

0.5 Amp, 300V, Planar NPN, Plastic

FEATURES

OESCRIPTION

•
•
•
•

Unitrode high voltage transistors provide
a unique combination of low saturation
voltage, fast switching, and excellent gain.
They are ideally suited for off-line power
supply designs and other applications
where the increased voltage rating adds
to system reliability.

Designed for High Speed Switching Applications
Collector-Emitter Voltage: up to 300V
Peak Collector Current: IA
Economical Plastic Molded Construction

ABSOLUTE MAXIMUM RATINGS
UPTA51G

UPTA520

UPTA530

Collector-Base Voltage, VCBO
......... 150V.................... 2S0V.. .
350V
. IOOV..
.... 200V........ ....... .. . .. 300V
Collector-Emitter Voltage, VCEO .
................................. SV...
" SV......
............ SV
Emitter-Base Voltage, VEBO
D.C. Collector Current, Ie
..... ... ~
.. ~
....
~
Peak Collector Current, Ie
........................ IA
......... IA..
......... IA
Base Current, IB
..........................................SA..
. ..SA
..•SA
Power Dissipation
2S·C Case
........ 2.4W ..
2S·C Ambient .
7S0mW ...............................................
Thermal Resistance, eJ _ C
............................
. ............................ 62.5·C/W
. ..... ..............
Thermal Resistance, e J _ A
...............................................
. .. 200·C/W
Storage Temperature Range .
............................................... ......
........... -SS·C to +150·C ......................................
........................................................
........................... +17S·C ...............................................
Maximum Junction Temperature

MECHANICAL SPECIFICATIONS
UPTA510 UPTA520 UPTA530

A
B

C

o
E
F

G
H

INCHES
.135 MIN.
.170 - .210
500 MIN.
016 - 019
175 205
.125 - .165
080 - 105
095 105
045 - 055

TO-92

MILLIMETERS
3.42 MIN.
4.31 - 5.33
1270 MIN.
406 - .482
4.44 5.21
317-4.19
203 266
241 266
1.14 - 140

[1::lJ
3/78

4-537

_UNITRDDE

•

UPTAS10 UPTAS20 UPTAS30
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

Min.

Max.

Units

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)

hFE
hFE
hFE
VCE (sat)
VCE (sat)
VeE (sat)
BVceo

20
8

-

-

Vdc
Vdc
Vdc
Vdc

Ic = .1A, VCE = SVdc
Ic = .SA, VCE = SVdc
Ic = lA, VCE = SVdc
Ic = .SA, Ie = .1A
Ic = .2A, Ie = .02A
Ic = .SA, Ie = .1A
Ic _lO"Adc

Vdc

Ic = 10mAdc

Base Saturation Voltage (Note 1)
Collector-Base Breakdown Voltage
(Note 1)
UPTAS10
UPTA520
UPTA530
Collector-Emitter Breakdown Voltage
(Note 1)
UPTA510
UPTA52O,
UPTA530
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Product
Rise Time
Delay Time
Storage Time
Fall Time

-

STyp.

150
250
350

1.0
.S
1.5

-

BVcEO
100
200
300

-

ICES
ICES
IEeo
Cob
fr

10
1
50
50

td
ts
tf

=

VCE rated BVCEO' VeE = 0
VCE = rated BVcEO, T = 125'C, VeE = 0
VEe = 5Vdc
Vce = 10Vdc, IE = 0, f
1MHz
Ic = lAde, VCE = 5Vdc, f
10M Hz
Ic =.5A

"Adc
mAdc
"Adc
pf
MHz
ns
ns
ns
ns

-

15
100 Typ.
50 Typ.
500 Typ.
200 Typ.

tr

Test Conditions

=

=

Note: 1. Pulse width = 300ps; duty cycle:;; 2%.
Note: 2. For thermal considerations for operating UPTA510, UPTA520 and UPTA530, refer to Application Note U·77.

D.C. current Gain

VS,

500
VeE

~ 100

10

~ sv

Vee

TJ =12S' C

d

C

TJ =
20

LS5' C

r-

10

5
.01

---

...........

t-

B 50
I~

r- __

TJ =125'C

'"a:a:

~~

--

r-

I

Z200

~

Switching Speeds

Collector Current

~

~
-....... ~

.05
.1
.2
.5
Ie - COLLECTOR CURRENT (A)

.02

~

5

. . . f::oc
fs:-..

.....

....

..... ':: 100kHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency: Typical 2A circuit performanceRise and Fall time <75ns
Efficiency >85%
• No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.)
• Electrically isolated, 4-Pin, TO-66 hermetic case
DESCRIPTION
The Unitrode ESP Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and specified for use in high current switching regulator applications.
The designer is thus relieved of one of the most time consuming, tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions.
Switching regulators, when compared to conventional'regulators, result in significant reductions in size, weight, and internal
power losses and a major decrease in overall cost. Using the
Unitrode PIC600 series, the designer can achieve further
improvements in size, weight, efficiency, and costs. At the
same time, because of the PIC600 series design and packaging,
the designer is aided in overcoming two of the most significant

POS.
INPUT

drawbacks to switching regulators: noise generation and slow
response time; there is, in fact, no diode reverse recovery
spike (see note 4.).
The PIC600 series switching regulators are designed and characterized to be driven with standard integrated circuit voltage
regulators. They are completely characterized over their entire
operating range of -55"C to +125"C. The devices are enclosed
in a special 4-pin TO·66 package, hermetically sealed for high
reliability. The hybrid circuit construction utilizes thick film
resistors on a beryllia substrate for maximum thermal conductivity and resultant low thermal impedance. All of the
active elements in the hybrid are fully passivated.
Application Notes U-68 and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications.

SCHEMATIC

PIC600
PIC601
PIC602
r-----~~

PIC610
PIC611
PIC612

NEG. 4
INPUT 0-__.-------.,

POS.
OUTPUT

2
COMMON

NEG.

r-1r-_~ OUTPUT

DRIVE

2
COMMON

MECHANICAL SPECIFICATIONS
PIC600 PIC601 PIC602 PIC610 PIC611 PIC612

4-Pin T0-66

1. Case is electrically isolated.
2. Loads may be soldered to within
1/ 16" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

J

142_ 152 OIA

361-386 OtA

-~~t~~-~ ~:~~=-=

8/78

5-4

~UNITRDDE

PIC600 PIC601 PIC602 PIC6l0 PIC611 PIC6l2

ABSOLUTE MAXIMUM RATINGS
PIC600
Input Voltage, V4_2 .•......
Output Voltage, V'_2
....................... .
Drive·lnput Reverse Voltage, V'_4 .
Output Current, I, ............................... .
Drive Current, I,
................... .

PIC601

PIC602

PIC610

PICI"

PICI12

............ 60V .................... SOV .................. 100V................ -60V................ -SOV.............. -lOOV
.................... 60V .................... 80V.................. lOOV................ -60V................ -SOV .............. -lOOV
.............. 5V ...................... 5V...................... 5V.................. -5V .................. -5V.................. -sv
.................. SA...................... SA...................... 5A.................. -SA.................. -SA.................. -5A
..... -0.2A ................ -0.2A. ............... -0.2A .................... 0.2A ................... 0.2A. ................... 0.2A

Thermal Resistance
Junction to Case, 9 J _C
Power Switch

4.0°C/W

Commutating Diode

4.0'C/W

Case to Ambient, 9 c _A

60.0'C/W

Operating Temperature Range, Tc

•

-55'C to +125'C

Maximum Junction Temperature, Tj

. +lSO'C

Sterage Temperature Range

-65'C to +lSO'C

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test
Current Delay Time
Current Rise Time

Voltage
Voltage
Voltage

Symbol
td;
tri

Rise Time

t"

Storage Time
Fall Time

t"
t f,

Current Fall Time

tfi

Efficiency (Notes 2. & 4.)

~

On·State Voltage (Note 3.)

V4_I (On)

On-State Voltage (Note 3.)

V4- I(onl

Diode Forward Voltage (Note 3.)

V2- I{OnJ
V2_ I(On)

Diode Forward Voltage (Note 3.)
Off-State Current
Off-State Current
Diode Reverse Current
Diode Reverse Current

1.-,

'.-,
1,_,
1,_,

PIC600, 601, 602
Typ. Max.

Min.

PIC610, 611, 612
Typ. Max.

Min.

-

50

75

-

30

50

450

-

50

75

-

70

150

85

-

-

-

-

20

40

Conditions

Units

50

75

ns

V" == 25V(-2SV)
VO"t == 5V(-5V)

30

50

ns

'oot

450

-

ns

I,

50

75

ns

See Figure 2.

-

70

150

ns

See notes 1., 2., 4.

-

85

-

20

40

ns

1.0

1.5

2.5

3.5

-

.8

1.0

-

-.8 -1.0

1.0

1.5

-1.0 -1.5

%
V
V
V
V

-0.1 -10

pA

-1.0 -1.5
-2.5 -3.5

0.1

10

-

10

-

-

-10

-

1.0

10

-

-1.0 -10

-

500

-

-

SOO

-

-

pA
pA
pA

== 2A(-2A)

== -20mA(20mA)

NOTE 5

== 2A(-2A), I, == -.02A(.02A) NOTE 5
== 5A(-5A), I, == -.02A(.02A) NOTE 5
I, == 2A(-2A)
I, == 5A(-5A)
V. == Rated input voltage
V. == Rated input voltage, TA == 100'C
V, == Rated output voltage
V, == Rated output voltage, T A == 100°C
I.

I.

NOTES:
1. In switching an inductive load, the current will lead the voltage on turn on and lag the voltage on turn-off (see Figure 2.). Therefore, Voltage Delay
Time (tov) '" tdl + trl and Current Storage Time (lsi) '" Isv + tlv·
__
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of Figure 1., in
which the efficiency is measured, is representative of typical operating conditions for the PIC600 switching regulators.
3. Pulse test: Duration = 300/ls, Duty Cycle :5 2%.
4. As can be seen from the switching waveforms shown in Figure 2., no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self'generated noise, since no current spike is fed through the switching regulator. It also improves efficiency and reliabilty,
since the power switch only carries current during turn-on.
5. To insure safe operation 13 should be ,,=120mAI during TON. Operation at 13 <120mAI can permanently damage device.

POWER DISSIPATION CONSIDERATIONS
The total power losses in the switching regulator is the sum olthe switching losses, and the power switch and diode D.C. losses. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by 1120KHz.
The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 forthe power switch and by (1·0)/.8 forthe
diode.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis must be performed. Please see Design Note 6 (DN-6) for further information.

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

5-5

PRINTED IN U,S.A.

PIC600 PIC601 PIC602 PIC610 PIC611 PIC612

Power Dissipation

~

z

Efficiency

40

100

35

90

0

j::

''!:"

'"'"C
0:
'"a~
"w

'"w'"
>
'"
0:

f

80
30

f

25

"""" r\

20
15

~

\

Maximum allowable average
power dissipation each, for the
power switch and for the diode.
Maximum allowable case

10

[

temperature .-.

0

o
-50

-25

0
To -

['..

25

'"
...w

40

"

\

125~C

75

100

V,"

20

125

==

Voul

::::

.5

.6 .7.8.9 1
I, -

MAXIMUM~

~

~

...J

.2

Power Switch D.C. Losses
Duty Cycle..::: .2,
T,
25'C

=

--::;V

.05

I'

.02

-

.

I

I

en
w

I IIl

.5

0

-

...J

.2

c.i

ci

v-::

~V

Duty

V/

~YPICAL

f--"

.1

I-- I--

.05

I

=

MAXIM~~

u

z

20kHz, V()IJ'

f I 20kHZ. 'Ve ,.

== 20mA

--j---+___,A---j

To = 25'C
.2~~_T~r-----~~~~~~~
MAXIMUM .1 Power Switch----:7"""---~...+'''-

50

en
w
en
en .05 1=....."'F+pf-""~---t----j--t---->

/,fQO/JS 10% duty cycle
lOpS 10% duty cycle

g

'"

z
i

-

.02

~ .01
~

en .005

DC

"-

""-

Tc = lOQ'C
f""'i"'''+''''I''''r--r------.,,~t__-_?1lOOkHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency: Typical 7A circuit performanceRise and Fall time <300 ns
Efficiency >85%
• No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.)
• Electrically isolated, 4-Pin, T066 hermetic case
DESCRIPTION
The Unitrode ESP Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and
specified for use in high current switching regulator applications. The designer is thus relieved of one of the most time
consuming, tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions.

significant drawbacks to switching regulators: noise generation
and slow response time; there is, in fact, no diode reverse
recovery spike (See note 4.).
The PIC600 series switching regulators are designed and
characterized to be driven wih standard integrated circuit
voltage regulators. They are completely characterized over
their entire operating range of -55'C to +l25'C. The devices
are enclosed in a special 4-pin T066 package, hermetically
sealed for high reliability. The hybrid circuit construction
utilizes thick film resistors on a beryllia substrate for maximum
thermal conductivity and resultant low thermal impedance. All
of the active elements in the hybrid are fully passivated.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, 'and
internal power losses and a major decrease in overall cost.
Using the Unitrode PIC600 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC600 series design and
packaging, the designer is aided in overcoming two of the most

Application Notes U-68 and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications.

SCHEMATIC

PIC625
PIC626
PIC627

NEG. 4
INPUT ( } - - . - - - - .

POS.
OUTPUT

POS.
INPUT

PIC635
PIC636
PIC637

2
COMMON

NEG.

r--<~_-o OUTPUT

COMMON

MECHANICAL SPECIFICATIONS
NOTES:

PIC625 PIC626 PIC627 PIC635 PIC636 PIC637

4-Pin TO-66

1. Case is electrically isolated.
2. Loads may be soldered to within

lite" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

mm

Ins.
A

620 MAX

1575 MAX

127-191

•

050-075

C

028-034

0

958-962

E

190-210

----071-066

-~--~

8/78

2433-2443
--

483-533
~---.-

190-210

483-533

350 MAX RAD

a89 MAX

RAD

H

570-590

1448·1499

J

142-15201A

361-386DIA

K

360 MIN

914 MIN

L

250-340

635-864

5-8

[1::D UNITRDDE

PIC625 PIC626 PIC627 PIC635 PIC636 PIC637

ABSOLUTE MAXIMUM RATINGS
PIC625

Input Voltage, V4_,
Output Voltage, V ,_,
Drive-Input Reverse Voltage, V3 _4
Output Current, I,
Drive Current, I, .............. ..

PIC626

PIC627

PIC635

PIC636

PIC637

........ 60V........
80V.................. 100V....
... -60V ................ -80V.............. -l00V
.......... 60V .................... 80V.................. 100V................ -60V................ -BOV.............. -l00V
........... 5V.............
5V...................... 5V .................. -5V.................. -5V .................. -5A
. ... 15A .................... 15A.................... 15A................ -15A................ -15A ................ -15A
....... -0.4A ................ -0.4A................ -0.4A.................... O.4A ................... 0.4A .................... 0.4A

...

Thermal Resistance
Junction to Case, 6 J _C
4.0"C/W

Power Switch

4.0"C/W

Commutating Diode
Case to Ambient,

60.0"C/W

6 CA

II

-55"C to +125"C

Operating Temperature Range, T C
Maximum Junction Temperature, Tj

+150'C

Storage Temperature Range

-65'C to +150'C

ELECTRICAL SPECIFICATIONS (at 25"C unless noted)
Test

Symbol

Current Delay Time

tdi

Current Rise Time

tri

Voltage Rise Time

trv

Voltage Storage Time

tsv

Voltage Fall Time

t,v

Current Fall Time

tn

Efficiency (Notes 2 and 4)

~

On-State Voltage (Note 3)

V4_I(Onl

On-State Voltage (Note 3)
Diode Fwd. Voltage (Note 3)

V4-I(on)
V2_I(On)

Diode FWd. Voltage (Note 3)

V2_I(on)

Off-State Current

I.-I

Off-State Current

I.-I

Diode Reverse Current

1,-,
1,-2

Diode Reverse Current

PIC62s/626/627
Typ. Max.

Min.

-

70

175

-

175

300

-

35

60

65

150

40
700

60

-

85

-

1.0

1.5

2.5

3.5

.85

1.25

PIC63S/636/637
Typ.
Max.

Units

35

60

ns

Vin = 25V(-25V)

Min.

.95

1.75

0.1

10

10

-

-

1.0

10

500

-

Conditions

65

175

ns

Vo"1 = 5V(-5V)

40

60

ns

700

-

ns

10 "1 = 7AC-7A)
13 = -30mA(30mA) NOTE 5

100

300

ns

See Figure 2

175

300

ns

See notes 1, 2, 4

85

-

%

-1.0

-1.5

V

I. = 7A(-7A), 13 = -.03A(.03A) NOTE

-2.5

-3.5

V

I. = 15A(-15Al, 13 = -.03A(.03A) NOTE

-.85

-1.25

V

-.95

-1.75

V

12 =7A(-7A)
12 = 15AC-15Al

-0.1

-10

"A

-10

-

-

-1.0

-

500

5
5

V. = Rated input voltage
V. = Rated input voltage,

-10

"A
p.A

-

"A

V, = Rated output voltage,

TA

= 100'C

V I = Rated output voltage

TA = 100'C

NOTES:
1. In switching an inductive load. the current will lead the voltage on turn-on and lag the voltage on turn-off (see Figure 2). Therefore. Voltage Delay Time
(tDV) '" tel; + tri and Current Storage Time (lsi) "'Isv + tlv.
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of Figure 1. in
which the efficiency is measured. is representative of typical operating conditions for the PIC600 series switching regulators.
3. Pulse test: Duration = 300jJS, Duty Cycle:5 2%.
4. As can be seen from the switching waveforms shown in Figure 2, no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self'generated noise, since no current spike is fed through the switching regulator. It also improves efficiency and reliability,
since the power switch only carries current during turn·on.
5. To insure safe operation 13 should be;" 130mAI during TON. Operation at 13 < 130mAI can permanently damage device.
POWER DISSIPATION CONSIDERATIONS

The total power losses in the switching regulator is the sum olthe switching losses, and the power switch and diode D.C. losses. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by fl20KHz.
The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 forthe power switch and by (1-0)/.8 for the
diode.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis must be performed. Please see Design Note 6 (DN·6) for further information.

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

5-9

PRINTED IN U.S.A

PIC625 PIC626 PIC627 PIC635 PIC636 PIC637

Power Dissipation

Efficiency

40

~

100

Z
0

;::

i1:

iii

VI

15

'\
1\

25

~

>
u

0.

w 15

'"

Maximum allowable average
power dissipation each, for the
power switch and for the diode.

5

temperature

70
60

...

'r\.
'\

0-

As measured in the circuit shown
in Figure 1.
V,"=25V
Vo" = V," X Duty Cycle
I, =30mA
T, =25'C

30

20

Maximum allowable case

o

10

= 125°C

0

-50 -25

0
25
50
75
100 125
T c - CASE TEMPERATURE ('C)

150

5 6 7 8 9 10
I, -OUTPUT CURRENT (A)

Diode D.C. Losses
100

Power Switch Duty Cycle
0.2
Diode Duty Cycle
0.8
25'C
T,
To obtain diode losses at any
other duty cycle, multiply by
(I·D)/.8 where D = Power
Switch Duty Cycle.

50

I

20

~

10

'"w
0

./

..J

c.i
t:i 1.0

~

t::- ~

20

30mA
Duty Cycle
0.2, I,
T, 25'C
To obtain power switch losses at
any other duty cycle, multiply by
D/.2, where D is the duty cycle.

50
20

V

~

10

VI

w

VI
VI

r-

L
MAXIMUM

9
c.i
t:i

~

.5

.5

.2

.2

.10
I, -

15

Power Switch D.C. Losses
100

TYPICAL- t----

I--MAXIMUM

VI
VI

5V

Z

-----' - - - -

= 20kHz

.f
!

"\

t 25V:Lil...JLJ
- OV

Note: PIC63S, PIC636, PIC637 Circuit and waveforms are identical but of opposite polarity (V"

Dn·State Characteristics

5

16

/'

14
TYPICAL
12

:>

u

/

18

UJ
0:
0:

14

u

12

/

:>

';::"
0:

lOOkHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency: Typical 7A circuit performanceRise and Fall time <300 ns
Efficiency >85%
• No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.)

DESCRIPTION

significant drawbacks to switching regulators: noise generation
and slow response time; there is, in fact, no diode reverse
recovery spi ke (See note 4.).

The Unitrode ESP Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and
specified for use in high current switching regulator applications. The designer is thus relieved of one of the most time
consuming, tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions.

The PIC600 series switching regulators are designed and
characterized to be driven with standard integrated circuit
voltage regulators. They are completely characterized over
their entire operating range of -55'C to +125'C. The devices
are enclosed in a special 3 pin TO-3 package, hermetically
sealed for high reliability. The hybrid circuit construction
utilizes thick film resistors on a beryllia substrate for maximum
thermal conductivity and resultant low thermal impedance. All
of the active elements in the hybrid are fully passivated.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, and
internal power losses and a major decrease in overall cost.
Using the Unitrode PIC600 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC600 series design and
packaging, the designer is aided in overcoming two of the most

pas.
INPUT

Application Notes U-68 and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications.

SCHEMATIC

PIC645
PIC646
PIC647

pos.

r-----.-4J

PIC655
PIC656
PIC657

NEG. 4
INPUT 0-.....------..

OUTPUT

r-1r-_-0

NEG.
OUTPUT

2
COMMON

DRIVE

COMMON

MECHANICAL SPECIFICATIONS
PIC645 PIC646 PIC647 PIC655 PIC656 PIC657

4
1
3

NOTE:

Loads may be soldered to within
1116" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

8/78

A
B
C
D
E
F
G
H
J
K
L
M
N

P

ins.
875 MAX
.135
250- 450
.312 MIN.
.205-.225
.420- 440
145 165
.395- 405
151 161 DIA
188 MAX RAD
525 MAX. RAD
708 728
1177-1197
038 043 DIA

5-12

3 Pin TO-3

mm
2223 MAX
343
6.35-1143
792 MIN
521-572
1067-1118
368 419
10 03-10 29
384 409 DIA
478 MAX. RAD.
1334 MAX RAD
1798-1849
2990-3040
97 109 DIA

om

_UNITRDDE

PICG45 PICG4G PICG47 PICG55 PICG56 PICG57
ABSOLUTE MAXIMUM RATINGS
PICB45

PICB4B

PICB47

PICB55

PIC656

PIC657

Input Voltage, V4 _2 .
.... GOV.....
SOV...... .
10DV.......... ..... -GOV................ -SOV.............. -lOOV
......... GOV.............
SOV....
..... 1ODV. ............... -GOV................ -SOV .............. -lOOV
Output Voltage, V'_2
Drive·lnput Reverse Voltage, V'_4 .
..................... 5V....
... 5V...................... 5V.................. -5V.................. -5V.................. -5V
Continuous Output Current, I,
........... l5A..............
l5A .................... l5A ................ -15A ................ -15A ................ -15A
Peak Output Current
.... 2OA.... ...
20A.................... 20A................ -20A................ -20A................ -20A
Drive Current, I,
... -0.4A ............... -0.4A. ............... -0.4A.................... 0.4A.................... 0.4A.................... 0.4A
Thermal Resistance
Junction to Case, !) J-C
2"C/W
Power Switch
2"C/W
Commutating Diode
30.0"C/W
Case to Ambient, HC-A
Operating Temperature Range, Tc
-55"C to +125"C
Maximum Junction Temperature, TJ
+150"C
Storage Temperature Range
-WC to +15O"C
ELECTRICAL SPECIFICATIONS (at 25"C unless noted)
PIC645/64B/647
Test

Current Delay Time
Current Rise Time
Voltage Rise Time
Voltage Storage Time
Voltage Fall Time
Current Fall Time
Efficiency (Notes 2 and 4)
On·State Voltage (Note 3)
On·State Voltage (Note 3)
Diode Fwd. Voltage (Note 3)
Diode Fwd. Voltage (Note 3)
Off·State Current
Off·State Current
Diode Reverse Current
Diode Reverse Current

Symbol

Min.

Typ.

-

I•. ,

-

14-,

-

I,.,
I,.,

-

35
G5
40
700
70
175
S5
1.0
2.5
.S5
.95
0.1
10
1.0

-

SOD

tdi
tri

t"
t"
tlv

-

tfi

-

'1

-

V4-'{O"1
V•. '10"1
V'·'lo"1

-

V2- I (OnJ

-

Max.

GO
150
GO

175

300

1.5
3.5
1.25
1.75
10

10

-

PIC655/656/657
Typ.

Min.

-

35
65
40
700
100
175
S5
-1.0
-2.5
-.S5
-.95
-0.1
-10
-1.0
500

-

-

-

Max.

Units

GO

ns
ns
ns
ns
ns
ns
%
V
V
V
V

175

GO

300
300

-1.5
-3.5
-1.25
-1.75
-10
-10

-

p.A

p.A
p.A
p.A

Conditions

Vi" = 25V(-25V)
Vo"1 = 5V(-5V)
1°"1 = 7A(-7A)
I, = -30mA(30mA) NOTE 5
See Figure 2
See notes I, 2, 4

I. = 7A(-7A), I, = -.03A(.03A) NOTE 5
I. = 15A(-15A), I, = -.03A(.03A) NOTE 5
I, =7A(-7A)
I, = 15A(-15A)
V. = Rated input voltage
V. = Rated input voltage, TA = 100"C
V, = Rated output voltage
V, = Rated output voltage, TA = 100"C

NOTES:
1. In switching an induclive load, the current will lead the voltage on turn-on and lag the voltage on turn-off (see Figure 2). Therefore. Voltage Delay Time
(tov) '" Idi + tri and Current Storage Time (tsi) '" Isv + tlv·
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of Figure 1, in
which the efficiency is measured, is representative of typical operating conditions for the PIC600 series switching regulators.
3. Pulse test: Duration; 300J.lS. Duty Cycle :'0 2%.
4. As can be seen from the switching waveforms shown in Figure 2, no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self-generated noise, since no current spike is fed through the switching regulator. It also improves efficiency and reliability,
since the power switch only carries current during turn-on.
5. To insure safe operation 13 should be 2: 130mAI during TON· Operation at 13

< 130mAI can permanently damage device.

POWER DISSIPATION CONSIDERATIONS
The total power losses in the switching regulator is the sum of the switching losses, and the power switch and diode D.C. losses. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by f120KHz.
The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 forthe power switch and by (1-0)/.8 forthe
diode.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis must be performed. Please see DeSign Note 6 (DN-6) for further information.

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. {617} 861-6540
TWX (710) 326-6509 • TELEX 95·1064

5·13

PRINTED IN USA

II

PIC645 PIC646 PIC647 PIC655 PIC656 PIC657

Efficiency

Power Dissipation
100

80

~

z

.

90

70

;::

60

'\

0.

(jj
II)

50

C

~

I'"

0:
W

:;: 40

0

0.

w 30

"'"
0:
W

20

'"I

10

>

0.0

>
0

"'
U

1'\

\

60
50
40

s::-

30

r--..

'\

As measured in the circuit shown--+--1
in Figure 1.
V,,=25V

20

=

Vout
V III X Duty Cycle
I, = JOmA
To = 25'C

10

O~~~~~~-L~~-L

25
50
75
100 125
CASE TEMPERATURE ('C)

Tc -

70

...u:
"'

=

o

150

2
I -

Diode D.C. Losses
100

Power Switch Duty Cycle
Diode Duty Cycle
0.8
To 25'C

50

~

10

L

w

20

/.

~

--

II)

-MAXIMUM

II)
II)

20

10

II)

"'

TYPICAL- I---

II)
II)

0

.,I'

.......-: ...... I---"

V

MAXIMUM

0

.,I

c..i
d 1.0

15

Duty Cycle
JOmA
0.2, I,
25'C
To
To obtain power switch losses at
any other duty cycle, multiply by
0/.2, where D is the duty cycle.

50

other duty cycle, multiply by
(1-0)/.8 whele 0 = Power
Switch Duty Cycle.

__~__~

5 6 7 8 9 10
OUTPUT CURRENT (A)

Power Switch D,C. Losses
100

0.2

To obtain diode losses at any
20

5V

f = 50KHz,V •• , = 5V~

Z

Maximum allowable average
power dissipation each, for the
power switch and for the diode.
Maximum allowable case
temperature
125°C

-50 -25

20KHz,Vowl

f

80

0

cJ
d

.5

.5

.2

.2

-

I-'"

.10

TYPICAL

V """"1-/
I--

,1
20

5678910
I, - OUTPUT CURRENT (A)

5 6 7 8 910
I, - OUTPUT CURRENT (A)

2

20

Maximum Safe Operating Area

Switching Losses

PIC 645, 646, 647-655, 656, 657

10

50

./"

~
II)

w

II)
II)

g

"Iz
U
f-

ii'

II)

MAXIMUM -

~

20

--.....

1.0

-

.5
.2

,......

,....

.10
.05 I--

-

TYPICAL

-

MAXIMUM

4

2
I, -

= 25V,

f = 20KHz

Tc = 25'C

') = 30mA

DC

.............

Te = 100'C

j

Diode

U11 J......-t4 Tr~ICAL

.01

JOOps 10% duty cycle
lOps 10% duty cycle

......

Power Switch

A

.02

Y,n

Power Switch

....................

78910
OUTPUT CURRENT (A)

~

0.5
PIC 645 655
PIC 646, 656
PIC 647, 657

0.2
-

piode

0,1

J

20

4 5

V.-,(ON)

10

20

304050

100

ON·STATE VOLTAGE

To determine switching losses at any other
frequency, multiply by f/20KHz where f is the

frequency at which the losses are to be
determined.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

5-14

PRINTED IN USA.

PIC645 PIC646 PIC647 PIC655 PIC656 PIC657

v,,, = +25V ---'''VII'v'--'-,

-'--JYY''NL---t---, - - - t-

!

V4 _ t

POWER SWITCH

Voul
= 5V

=-

IDRIVl
-30mA
Pulse Width.:::: 10p.5

:

Ton =10J.(S
- Tofl :::: 40,us
Note: No Diode Reverse or Forward Recovery Spike (See note 4.)

t---~-------'---

Rep. Rate = 20kHz

\.,

+25VI~~'

_ OvU

U

f····;:)"···~~::~~~·~;~:··~·I:~·~·············

!

U

Figure 1. PIC645, 646, 647 Switching Speed Circuit

On·State Characteristics

16
14

a:
a:
:>
u

12

~
./

OJ

TYPICAL

.

V

I-

V

=+3omA.)

Z

I-

l/MAXIMUM

"1

0

-"

/

12

0

TYPICAL

a:

"-

/

OJ

0

a

I

I?V
~

V •• , (on) -

1~

V'.'(on) -

ON·STATE VOLTAGE (V)

V"

25V
5V

I,
T,

30mA
25'C

V oul

Fall Time
1000

As measured in the circuit shown

in Figure 1.

soo

Yin

200

"Vi

oS

25V

Voul 5V
30mA
I,

400
300

~

T,

25'C

,

200

tn

oS

OJ

:;; 100

50
40

.c:::

t"

;::

teo

I---!-

.I

OJ

:;; 100

;::
I

U

DIODE FORWARD VOLTAGE (V)

Turn·on Time
As measured in the circuit shown
in Figure 1.

500
400
300

TI :::: 25 C C

J /

-'

:/1

1000

i

V

'L L

a

I.

0

MAXIMUM

0

T, = 2S'C
1,=30mA- f--

III

I

14

a:

V

z

16

« 10
:;:

/ /

I-

18

OJ

a:
a:
:>
u

V /

10

OJ

DRIVE

20

18

I-

=-25V, V""' =-5V, I

Diode Forward Characteristics

20

~

\

Figure 2. PIC645, 646, 647 Switching Waveforms

Note: PIC655, PIC656, PIC657 Circuit and waveforms are identical but of opposite polarity (V"

Z

.\

I

30

50
40
30

20

20

t"
tp,

10

10
2

I, -

5678910
OUTPUT CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

20

2

I, -

5·15

45678910
OUTPUT CURRENT (A)

20

PRINTED IN U.S.A.

•

POWER INTEGRATED CIRCUIT

PIC660
PIC661
PIC662
PIC670
PIC671
PIC672

Switching Regulator 10 Amp Positive and Negative
Power Output Stages
FEATURES
• Designed and characterized for switching regulator applications
• Cost saving design reduces size, improves efficiency, reduces noise and RFI (See note 4.)
• High operating frequency (to >lOOkHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency: Typical 5A circuit performanceRise and Fall time <300ns
Efficiency >85%
• No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.)
• Electrically isolated, 4-Pin, TO-66 hermetic case
DESCRIPTION
The Unitrode Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and
specified for use in high current switching regulator applications. The designer is thus relieved of one of the most time
consuming, tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions.

significant drawbacks to switching regulators: noise generation
and slow response time; there is, in fact, no diode reverse
recovery spi ke (See note 4.).
The PIC600 series switching regulators are designed and
characterized to be driven with standard integrated circuit
voltage regulators. They are completely characterized over
their entire operating range of -55°C to +125°C. The devices
are enclosed in a special 4-Pin TO-66 package, hermetically
sealed for high reliability. The hybrid circuit construction
utilizes thick film resistors on a beryllia substrate for maximum
thermal conductivity and resultant low thermal impedance. All
of the active elements in the hybrid are fully passivated.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, and
internal power losses and a major decrease in overall cost.
Using the Unitrode PIC600 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC600 series design and
packaging, the designer is aided in overcoming two of the most

SCHEMATIC

PIC660
PIC661
PIC662
POS.
INPUT

Application Notes U-68 and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications.

r-----~_O

NEG.

POS.
OUTPUT

INPUT

4

PIC670
PIC671
PIC672

0-.....-----,.

2
COMMON

NEG.

~~_-o OUTPUT

DRIVE

COMMON

MECHANICAL SPECIFICATIONS
PIC660

NOTES:

PIC661

PIC662

PIC670

PIC671

PIC672

4-Pin TO-66

1. Case is electrically isolated.
2. Loads may be soldered to within
1116" Of base provided temperatureIns.

time exposure is less than 260°C

for 10 seconds.

B

1\4
JDK
4/82

A

620 MAX

1575 MAX

B

050-075

127-191

C

026-034

071-086

D

958-962

243J-2443

E

190-210

483-533

190- 210

483-533

G

350 MAX RAD

689 MAX RAD

H

570- 590

14461499

F

J

142-152 DIA

361-386 DIA

K

360 MIN

914M1N

L

250 340

635-864

OUTPUT(l)

5-16

~UNITRDDE

PIC660

PIC661

PIC662

PIC670

PIC671

PIC672

ABSOLUTE MAXIMUM RATINGS
PIC660

PIC661

PIC662

PIC670

PIC671

PIC672

-BOV ........ -lOOV
Input Voltage, V.-2 ........................... 60V
BOV
lOOV ......... -60V
-BOV .........-lOOV
Output Voltage, V'-2 .......................... 60V
BOV ......... lOOV ......... -60V
-5V ......... -5V
5V ......... 5V ......... -5V
Drive·lnput Reverse Voltage, V3- . . . . . . . . . . . . . . . 5V
-lOA ......... -IOA
Output Current, I, ............................ lOA
lOA ......... lOA ......... -lOA
0.4A ......... 0.4A
Drive Current, 13 ............................ -0.4A ........ -O.4A ......... -O.4A ......... O.4A
Thermal Resistance
Junction to Case, 8J- c
Power Switch ............................................................. 4.0'C/W .................................... .
Com mutating Diode ...................................................... 4.0'C/W .................................... .
Case to Ambient, 8e-•........................................................ GO.O'C/W.................................... .
Operating Temperature Range, Te ............................................ -55'C to +125'C................................ .
Maximum Junction Temperature, T, ............................................... .+lSO'C .................................... .
Storage Temperature Range .................................................. -65'C to +lSO'C .............................. ..

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test
Current Delay Time
Current Rise Time
Voltage Rise Time
Voltage Storage Time
Voltage Fall Time
Current Fall Time
Efficiency (Notes 2 and 4)
On·State Voltage (Note 3)
On·State Voltage (Note 3)
Diode Fwd. Voltage (Note 3)
Diode Fwd. Voltage (Note 3)
Off·State Current
Off·State Current
Diode Reverse Current
Diode Reverse Current

Symbol
tdi

tri
trv
tsv
tfv

tf!
~

V•. "onl
V4-I(onl
V'.'(onl
V'.'(onl
I•. ,
14-,
I,.,
I,.,

PIC660/661/662
Min. Typ. Max.

-

PIC670/6711672
Min.

35

60

65

ISO

40

60

700

-

70
175

175

-

300

-

-

-

85
1.0

1.5
3.5

2.5
.85

1.25

.95
0.1

1.75
10

10
1.0

-

500

-

10

Typ.
35
65

Max;

Units

GO
175
60

ns

700

-

ns
ns
ns

100

300

ns

175
85
-1.0

300

ns

40

loul = 5A(-5A)
13 = -30mA(30mA) NOTE 5
See Figure 2
See notes I, 2, 4

-

%

-1.5
-3.5

V
V
V

I. = 5A(-5A), 13 = -.03A(.03A) NOTE 5
I. = lOA(-lOA), 13 = -.03A(.03A) NOTE 5
I, =5A(-5A)

V

-10

I, = lOA(-lOA)
V. == Rated input voltage

-2.5
-.85 -1.25
-.95 -1.75
-0.1

Conditions

Yin = 25V(-25V)
Voul = 5V(-5V)

-10

-

p.A
p.A

-1.0
500

-10

/LA

V. = Rated input Yoltage, TA
V,
Rated output Yoltage

-

p.A

V, = Rated output Yoltage, T A = 100'C

=

=100'C

NOTES:

1. In switching an inductive load, the current will lead the voltage on turn-on and lag the voltage on turn-off (see Figure 2). Therefore, Voltage Delay Time
(tOY) '" lei! + tn and Current Storage Time (le,) ""lev + ttv.
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of Figure I, in
which the efficiency is measured, is representative of typical operating conditions for the PIC600 series switching regulators.
3. Pulse test: Duration = 300pS, Duty Cycle"; 2%.
4. As can be seen from the switching waveforms shown in Figure 2, no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self-generated noise, since no current spike is fed through the switching regulator. 11 also improves efficiency and reliability,
since the power switch only carries current during turn-on.
5. To insure safe operation 13 should be 2: 130mAI during TON. Operation at 13 < 130mAI can permanently damage device.
POWER DISSIPATION CONSIDERATIONS
The total power losses in the switching regulator is the sum of the switching losses, and the powerswitchand diode D.C. losses. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by f120KHz.
The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 forthe power switch and by (1-0)/.8 forthe
diode.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis mvst be performed. Please see Design Note 6 (DN-6) for further information.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

5·17

PRINTED IN U.S.A.

•

PIC660 PIC661

Power Dissipation

PIC662 PIC670 PIC671

Efficiency

40

100

35

90

f ~KHZ' Voo• i20V

I...

~

z

~

f

30

~

0..

is

25

>u

"'Uu:
...

1,\

0

..,"''"a:
..,"'>

15

I"'-

Maximum allowable average
power dissipation each, for the
power switch and for the diode.
Maximum allowable case
temperature
125'C

10

I
0..0

"'I

..

-50 -25
Tc -

=20KHz, V... =SV

'\

40
As measured in the circuit shown--+--I
in Figure 1.
v. = 2SV
VOIJ1 = V,n X Duty Cycle
b = 30mA

30

Tc

25
50
75
100 125
CASE TEMPERATURE ('C)

10

4
-

~

en

f--MAXIMUM

15

20

TYPICAL-

Duty cycle - 0.2, 13 = 30mA

50

Te = 25'C

20

To obtain power sWitch losses at
any other duty cycle, multiply by
0/ .2, where D is the duty cycle.

10

II)

-

'"

II)
II)

0

MAXIMUM

0

-------' - - - -

= 20k Hz

PIC671

V4 _ 1

\,

=-30mA

Pulse Width.= 10.u5

PIC670

+
VOU1 =
5V

Rep. Rate

PIC662

t· ..·;:"}················································ ":

;

COMMUTATING DIODE

,

!
Figure 1. PIC660. 661. 662 Switching Speed Circuit

\

Figure 2. PIC660. 661. 662 Switching Waveforms

Note: PIC670, PIC671, PIC672 Circuit and waveforms are identical but of opposite polarity (V," = -15V, V,", = -5V, IDR'VE = +30mA.)

On·State Characteristics

Diode Forward Characteristics

20

20

18

~
z

...
w
'"'"
:>

18

~
16
z

...

16

w

14

'":>'"
u

12

0

"'"i:
...'"0

<)

w

10

...l;:
z
0

TYPICAL /

II)

/

MAXIMUM TJ = 25°C
1,= 30mA -

,/ V

Iii

I
-'

f--

14
12
10

0
0

f--

I

o

1.5

.5
V,.,(on} -

V," = 15V

As measured in the circuit shown
in Figure 1.
V," - 15V

SOO

vout = 5V

Vout

400
300

b = 30mA
T; = 25'C

~ 200 ~~-+-1-1-+1--+-+-+~4---+-~

on

oS
w

-

5V

b - 30mA
T; = 25'C

200

t"

i=

I

t"

t.,

~

.1

:!! 100

tn

,
tf,

oS
w

~ll00.11
50
40
30

2.5

DIODE FORWARD VOLTAGE (V)

Fall Time
1000

As measured in the circuit shown
in Figure 1.

400
300

-

/-"Y

o

Turn·on Time

SOO

MAXIMUM

T) = 25°C

J

-'

V,_,(on)- ON-STATE VOLTAGE (V)

1000

II

1/ /

C

I.
/1

!

I
I

TYPICAL

w

so
40
30

20 r-1--t-t~~--~-+~+----+--~

20

10
5678910
I, -

20

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6S09 • TELEX 95-1064

5678910

2

OUTPUT CURRENT (A)

I, -

5-19

20

OUTPUT CURRENT (A)

PRINTED IN U.S.A.

•

POWER INTEGRATED CIRCUIT

PIC730
PIC740

Schottky Switching Regulator 30A, 40V
Power Output Stages
FEATURES

APPLICATIONS:

• Designed and characterized for switching regulator applications
• Cost saving design reduces size, improves efficiency, reduces noise and RFI
• High operating frequency (to 100kHz) results in smaller inductor-capacitor filter
and improved power supply response time
• Low forward drop of Schottky Rectifier:
VF .6V at 20A
• High Efficiency: 90% typo @ 15A (see last page)

High efficiency and high current
Buck or Flyback type switching
regulator.

=

DESCRIPTION
The Unitrode PIC700 series are unique hybrid circuits, specifi·
cally designed, constructed and specified for use in high
current switching regulator applications. The designer is thus
relieved of one of the most time consuming, tedious and
critical aspects of switching regulator design: choosing the
appropriate switching transistors and commutating diode.

significant drawbacks to switching regulators: noise generation
and slow response time.
The PIC700 series switching regulators are completely characterized over their entire operating range of -55°C to +125°C.
The devices are enclosed in a special 3 pin TO-3 package,
hermetically sealed'for high reliability. The hybrid circuit
construction utilizes a beryllia substrate for maximum thermal
conductivity and resultant low thermal impedance. All of the
active elements in the hybrid are fully passivated.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, and
internal power losses and a major decrease in overall cost.
Using the Unitrode PIC700 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC700 series design and
packaging, the designer is aided in overcoming two of the most

SCHEMATIC
PIC730
PIC740
POS. 4
INPUT

POS.
OUTPUT

0---""

3

2

DRIVE

COMMON

MECHANICAL SPECIFICATIONS
PIC730 PIC740

NOTE:
Leacls may be solclerecl to within
1/16H of base provided temperatureA

4
1
3

[~p

22.23 MAX.

.135

3.43
6.35-11.43

,312 MIN.

7.92 MIN.

205-.225

521-5.72

F

.420-440

10,67-11.18

G

.145-165

3.68-4.19

H

.395-.405

10.03-1029

,151-.161 CIA

3.84-4.090IA.

J

188 MAX. RAO. 4.78 MAX RAD
.525 MAX. RAD. 13.34 MAX. RAe

L

5-79

.875 MAX.

.250-.450

C 0

~f1

mm

In8.

time exposure is less than 260"'C
for 10 seconds.

3 Pin TO-3

M

708-728

17.98-1849

N
p

1.1n-1.197

29.90-30.40

038-.043 DIA

97-1.090IA.

5·20

~UNITRDDE

PIC730 PIC740
ABSOLUTE MAXIMUM RATINGS
PIC730

PIC740

Input Voltage
............................
.. .............. 30V ..........
.. ............ 40V
Output Voltage
............................. 30V ."............
.. ................................................ ............ 40V
Drive-Input Reverse Voltage
.......................................................................... 7V ..................................................................................... 7V
Continuous Output Current ............................................................................................ 20A .....................................................................................2OA
Peak Output Current ........................................................................................................... 30A ...................
.. ..........................................................30A
Drive Current .................................... ...........................................................
.. .......... 5A .. ,.......
. ........................................................... 5A
Thermal Resistance
Junction to Case, e J-C
Power Switch ........................................................................................................................................................l.O'C/W.. ..
Commutating Diode ....................
.............................................................................................................2.0'C/W....... .
Case to Ambient, e C_A ...... ....................
.. .................................................................................................. 30'C/W ..... .
Operating Temperature Range, Tc ........................................................................................................................-55'C to +125'C........... ..
Maximum Junction Temperature, TJ
................................................................................................................+150'C ... .
Storage Temperature Range ....
. ...................................................................................................-65'C to +150'C ............ .

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
SCHOTTKY RECTIFIER
Symbol

Test

PIC730
Min.

PIC740

. Max.

Min.

Max.

Unit

Test Conditions

rated,
Tc
125'C
Pulse Width
Duty Cycle
VR -

=

Maximum Instantaneous
Reverse Current

i.

-

50

-

50

rnA

Maximum Instantaneous
Forward Voltage

VF

-

0.6

-

0.6

V

iF
Te

Collector Saturation
Voltage (Note 1)

VeE 1•• 1,

-

1.0

-

1.0

V

Ie:::: 20A

Base Saturation
Voltage (Note 1)

V'EI""

-

1.5

-

1.5

V

Ie

= 20A

Collector-Emitter Sustaining
Voltage (Note 2)

VCEOlsus}

30

-

40

-

V

Ie

=100mA

ICEO

-

10

-

10

= 3001.5,
= 1 percent

= 20A
= 125'C,

TRANSISTOR

Collector Cut-off
Current
Emitter Cut-off
Current
Resistive
Switching
Speed

Rise
Storage
Fall

Inductive
Switching
Speed

Current
Fall
Voltage
Fall

mA

VeE
P.w.

= 2.5A
I, = 2.5A

Is

=40V

=3001'5

IESO

-

10

-

10

rnA

VES =7V
P.W. =300l's

t,
t.
t,

-

500
1.5
250

-

500
1.5
250

nS
I'S
nS

Vee
30V
Ie
20A
I"
IS2
2.5A
VSE loffl
-4V

t"

300 TYP.

300 TYP.

nS

t,y

350 TYP.

350 TYP.

nS

=

=
= =

=

TJ = 100'C
Vee = 30V Ic =20A
VClamp =VCEO L = 1751'H
IS1 = IS2 =2.5A

Notas

1. Pulse Jength=250 P.s; duty cycle ... 1%.
2. Sustaming Voltage. Measured at a high current point where collector-emitter voltage is lowest. Current pulse length eo 50 I'Si duty cycle ~ 1%.
Voltage clamp~ at maximum collector-emitter voltage.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861-6540
TWX (7101 326-6509 • TELEX 95-1064

5-21

PRINTED IN U.S.A.

II

PIC730 PIC740
Power Dissipation

DC Current Gain

160

500

~

140

~

"
0

Transistor

200

120

'\

~

c.

.~

100

is
~

~
0

80
Schottky Rectifier

ID. 60

""-

~

CI)

I

40

CI

'~

20

0:
0:

""
"

C

"\

.c~

1'\

o

-25

25
50
75
100
Tc - Case Temperature ('C)

125

1.0 I--

0.2

150

.5

~

20

I%:

~ 10
z

>

z

:>

I--.05 f..---

VI

f::::=:::

k

......

......-: ~./

:>

V

...u0

~
V

W·Hdol's
lil-.l

~1~..
I~ t=
' <'

Te

= 25'C

'"0:0:

./

:::5~

.1

~
~
lll"\. "'@"

...

IV?"

1--100'C

;:

0

20

Forward Bias Safe Operating Area

./

25'C

10

0.5

30

51.C

..J

~

V

l"-

-55'C

V

Ie - COLLECTOR CURRENT (A)

V'Elutl

0

20

10

Transistor - Saturation Voltages

3.0

;::
«
0:

50

u
u

5

o

'"CI

100

I.U

........

-SO

~

-

J

25 C

Z

~ \

u

"-

...

..... r-

:>

"-

«>

z
;;:

Vee - 5v

10d,c

u

r\ \

0:

Veef,.fj

I--t-

W

..J
..J

I"

Limited

V

1
1\

0

05'C

u

I

100'C

_u

lellj=a- t-

0.5

.04

0.3

.3

.5

5
10
Ie - COLLECTOR CURRENT (A)

10

2

20 30

20

50

100

200

VeE - COLLECTOR VOLTAGE (V)

Resistive - Turn·Off Time

Resistive - Turn·On Time
1000

soo

..

/

g 200
'"::;;

100'C

./

r1"

t, -

..... ~

-ioo.

;:: 100

t--ts

Vee =30V
lellB~8
100'C

I"-

.:>

'"

::;;

;::

i2r,c

CI

z

CI

z

r
u

r

~

-

2

r- 1-1""r-t-

...

50

~

~

VI

VI

0.5

25''!:s

~

t-....

i"0.2

100'C

-If
O. 1

20

.......

1

25'l--'

Vee = 30V
lell
~
10
0.2

,;=

10
2
0.5
Ie - COLLECTOR CURRENT (A)

UNITRODE CORPORATION, 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 ' TELEX 95·1064

.05
0.2

20

0.5

2

10

20

Ie - COLLECTOR CURRENT (A)

5·22

PRINTED IN U.S.A.

PIC730 PIC740
Rectifier - Typical Reverse
Current vs Reverse
Voltage

Rectifier - Forward Current

vs
Forward Voltage

1000

.001
.002

SOO

.005
.01
.02
.05
.10
.20
.50
1.0
2.0
5.0
10
20

200
100
50

125'C~

~//
//
'/

20
10

~
f-

~-55'C

z
w
ct:
ct:

::>

V /
100'C

IJ

.2

i"-

.1

.2

'"ct:

w
>
w

25'C

500
1000
2000

./'

/

100'C

~

~

ro

.4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3
V,-FORWARD VOLTAGE (V)

r-

II

/

5000 ~ ~
IOma
~
50 M
w so ~ ~ ~
V,-REVERSE VOLTAGE (% of V'WM)

I
.3

50
100
200

ct:

I

I

.1

w

~ / II

,I

.5

u

--

25'C_

125'C

10

Possible Circuit Configurations

15 AMP

SWITCHING REGULATOR

15 AMP

Pass Transistor - Unsaturated·Mode
T,

PIC740

r-------,

EIN=..2_5~_~1"_~I",

SWITCHING REGULATOR

Pass Transistor -

.--------,
,

Eo=5V

I

N,

Saturated~MDde

PIC740

I

,

I . "',

I

100

1500'"

500

"

50V

SOOp;f
50V

10V

I

L_

10V

~

2N3762

,

.1

~4--+--r

UC1524 or EQUIV
UC1524 or EQUIV. -F"""~:ot"

Trans, T,
Ferroxcube
INDUCTOR L
N 35 turns

=

Re&\Ilatlon .
Typ. Efficiency at 15A

Wire size #18

..... lI'KI

.,,'

Amold A4-17172

core, 2616p·3B7
N I =2.

NJ =16.
NI = 40,

Inductor L
N 35 turns.
Wireslze#lB

=

Regulation
Typ. EfficIency at 15A

.•18%
go%

Arnold A4-17172

Unitrode Corporation makes no representation that the use or
interconnection of the circuits described herein will not infringe
In existing or future patent rights, nor do the descriptions contained herein imply the granting of licenses to make, use or sell
~quipment constructed in accordance therewith.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (no) 326-6509 • TELEX 95-1064

5-23

PRINTED IN U S.A.

POWER INTEGRATED CIRCUIT

PICSOO
PICSOl
PICSlO
PICSll

Switching Regulator BA, 400V
Power Output Stages
APPLICATIONS:

FEATURES
• Designed and characterized for switching regulator applications
• Cost saving design reduces size, improves efficiency, reduces noise and RFI
• High operating frequency (to 100kHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency
• Electrically isolated, 4 PIN, TO-66 hermetic case
• Fast reverse recovery time of commutating diode
• Low capacitance between active components and case (= lOpf)

PICBOO/801-High voltage Buck or
Flyback regulator.
PICBI0/811-Single ended half bridge
(2 required),
Full bridge (4 required),
Deflection circuits,
. DC motor drive. .

DESCRIPTION
The Unitrode PIC800 series are power hybrid circuits, specifically
designed, constructed and specified for use in high voltage
switching regulator applications. The designer is thus relieved
of one of the most time consuming, tedious and critical aspects
of switching regulator design: choosing the appropriate switching
transistors and commutating diode.

significant drawbacks to switching regulators: noise generation
and slow response time; the reverse recovery time of the
commutating diode is less than 50 nanoseconds. The
capacitance between the active components and the package
is about 10 picofarads.
PIC800 series are completely characterized over their entire
operating range of -55'C to +125'C. The devices are enclosed
in a special 4-pin TO,66 package, hermetically sealed for high
reliability. The hybrid circuit construction utilizes a beryllia
substrate for maximum thermal conductivity and resultant
low thermal impedance. All of the active elements in the
hybrid are fu lIy passivated.
Suggested circuit applications are listed on fourth page of
this sheet.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, and
internal power losses and a major decrease in overall cost.
Using the Unitrode PIC800 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC800 series design and
packaging, the designer is aided in overcoming two of the most

SCHEMATIC
PIC800
PIC801

PIC810
PIC811

DRIVE

MECHANICAL SPECIFICATIONS
NOTES,
1. Case is electrically isolated.
2. Leads may be soldered to within
1116" Of base provided temperaturetime exposure is less than 260"C
for 10 seconds.

PICBOO PICB01

ins.

PICB10 PICB11

mm

A

620 MAX

1575MAX

•

050-075

127-191

C

028-034

071-086

0

958-962

2433-2443

E

190-210

483-533

190-210

483-533

350 MAX RAD

889 MAX RAO

H

570-590

1448·1499

J

142-152 DIA

361-38801A

360 MIN

914MIN

250-340

635-664

4-Pin TO-&8

~

BASE DRIVE (1)

5/79

5-24

~UNITRDDE

PIC800

ABSOLUTE MAXIMUM RATINGS

PIC80l

PIC810

PIC800·PIC810

.. ... 350V...
....... .350V...
.... SV...
...... 8A
.5A ...................... .

I nput Voltage .
Output Voltage
Drive·lnput Reverse Voltage
Peak Output Current .
Continuous Output Current
Drive Current

. .. 400V
........... 400V
5V

..SA
...5A
.... 2A

.... 2A

Thermal Resistance
Junction to Case, 8 J •c
Power Switch
Commutating Diode.
Case to Ambient, 8 C• A
Operating Temperature Range, Tc .
Maximum Junction Temperature, TJ .
Storage Temperature Range.

PIC811

PICB01·PICBll

2'C/W
3'C/W
60.0'C/W
-55'C to +125'C
+150'C
-65'C to +l50'C

•

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
RECTIFIER
Test

Maximum Inst.
Reverse Current

Maximum

Forward Voltage

Symbol

PIC800·PIC810
Min.
Max.

PIC801-prC811
Min.

Max.

TJ = 25'C
TJ = 100'C

i,

-

20

-

500

TJ = 25'C
TJ = loo'C

-

1.25

-

1.15

-

1.25

V,

V,

350

-

400

-

DC Blocking Voltage
Maximum Reverse

t"

Recovery Time

-

-

Test Conditions

"A

VR = rated,
Pulse Width = 3OO"s,
Duty Cycle = 1 percent

20
500

1.15

-

50

Unit

50

V

i,=3A

V

Pulse Width = 300"s, I, = 20"A

nS

1,"'hA,I,=IA
I"e = .25A

V

Ie = 2.0A, I, = 0.4A

V

Ie = S.OA, I, = LOA

TRANSISTOR
Collector Saturation Voltage
(Note I)
Collector

Saturation

!

Vee!s.!,

Te = 25'C
Te = 100'C

Voltage
(Note 1)

Collector Saturation Voltage
(Note 1)

!

Base Saturation Voltage

VCE(satl

VeElsat,
VIE

Is""

-

1.0

-

1.5

-

2.0

-

-

1.0
1.5
2.0

-

3.0

-

3.0

V

Ie = S.OA, I, = 2.0A

-

1.2

-

1.2

V

Ic = 2.0A, I, = 0.4A

V

Ie = 5.0A, I, = LOA

Tc = 100'C

VaEInfl

-

1.6

-

1.6

Te =25'C

VBE{$illl

-

1.5

-

1.5

VCEOIslIsl

350

-

400

-

V

Ic=lOmA

VCEX!MI

350

-

400

-

V

'al =182 = O.6A
VeE clamp = rated VCEX f511S1

Emitter·Base Cutoff Current

lEBO

-

1

-

1

mA

V.,=9V

Collector Cutoff Current

-

1.0

'CEV

-

1.0

mA

VCE = 350V, VIE = -1.SV
VCE = 400V, VIE = -1.5V

Collector Cutoff Current,
Tc = 1oo'C

-

-

5

'CEV

-

-

-

mA

VCE = 350V, VIE = -1.5V
VCE = 400V, VIE = -1.SV

Cobo

110

Typ

110

Typ

pF

Vc, = 10V, f = 1 MHz

4

-

4

-

MHz

ISO

-

ISO

-

.J

-

0.1
O.S
2.0
0.4

-

-

-

0.1
O.S
2.0
0.4

,s

Ie = S.OA
Vce = 125V
I.. = II~ = lA
VIE loffl = SV

-

2,3
0.4

-

2.3
0.4

"s

VCE clamp

Base
Saturation
Voltage
(Note 1)

Collector-Emitter Sustaining

Voltage (Note 2)

Ie = 3.0A, L = lSOI'H

Collector-Emitter Sustaining

Voltage (Note 2)

Output Capacitance,
Common Base
Gain-Bandwidth Product
Energy Second Breakdown

(unclamped)
Resistive Switching Speeds
Delay Time
Rise Time
Storage Time

Fall Time
Inductive Switching Speeds
Te = loo'C
Storage Ti me
Fall Time

F,

-

5

Ic = 3.0A, VIE lofll

E,/,

td
t,
t,
tt

t,
tt

-

-

Notes
1. Pulse length""'250 .us; duty cycle

0;;:; 1%.
2 Sustaining Voltage. Measured at a high current point where collector-emitter voltage
Voltage clamped at maximum collector-emitter voltage.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

VeE = 10V, le=O.SA, f = 1 MHz

5.25

IS

= 4V

I" =0.6A
L = 40"H unclamped

Ie = S.OA, VIE lot~ = 5V
1.,=J 12 =lA
= rated VCo. ISllsl

lowest. Current pulse length;;: 50 .us; duty cycle

0;;:;

1%,

PRtNTED IN U.S.A.

PIC800 PIC801 PIC810

Forward Bias Safe Operating Area

Power Dissipation
80

!

z

10

70

.'"

iii
OJ
i5
a:

UJ

.
:;:

60

\

so

UJ

"'a:"
UJ

>

'",

. .0

"'" " '\.

f0

40

0

30

UJ

10

o

"..

./0.

.

::-..

'"-'-'
0

~

11

'\~
11

.5

0

%

\.

"

Tc = 25°C
Curves Apply Bel~W

..!'
.2

=

\.

mRanVe'i

Te -

25
50
75
100 125
CASE TEMPERATURE (OC)

150

5

10

\
r\

.1
-25

~

~

IS8 Limited

,

"~

'%:

~~~ ~.
'" ~

0

Maximum allowable average "'power dissipation each, for the
transistor and for the rectifier.
Maximum allowable case
temperature 125°C

-50

[\~

j' [\

0:

"\

20

"-~~

2

0:
0:

:J
0

~~

~

fZ

\.

REC'TIFIEh

"-

"-

~

TRdNSISioR

0

;::

PIC811

soo

200
50
100
20
VeE-COLLECTOR VOLTAGE (V)

Saturation Voltages

Reverse Biased Safe Operating Area
5

I
Ie'"

=5

II

~
fZ

~IC,800

UJ

PIC 810

0:
0:

~

PIC
801

~

'-PIC
811

~

~

:J

o

0::

~

> 0.5

-'

o

0:

-'

0.2

........

OJ

0.1

f-

0.1

so

20

100

200

500

.05
.05

1000

0.1

VV
~ V~5°C
VeE!sat)

0.5
0.2
COLLECTOR CURRENT (A)

Ie -

Ve,x 1'''1- COLLECTOR VOLTAGE (V)

6,..

/olfc/

:J 0.2
f-

I

10

I- --:

(sat)

55°
100°C

'"
'"

.05

VBE

25°

0

0.5

z
0
;::

o

_55°C

UJ

 V(clamp) = 350V
VCC

= 125V
t,

If,

.S

nS

tfi
nS

2S'C
100'C

1.2
1.76

120
140

160
185

le=3A

2S'C
l00'C

.8
1.1

100
170

100
130

le=5A

2S'C
l00'C

.9
1.0

80
190

100

Current

Temp.

le= lA

140

APPLICATIONS:
BUCK REGULATOR

FULL BRIDGE

PUSH·PULL

,-,..-----.-..---0 E'N
PIC 810

PIC 810

E."

HALF BRIDGE

SINGLE ENDED

EJN

DEFLECTION CIRCUIT

0--,.-------...,

ICrr
,

.

FLYBACK TRANSFORMER

II ~

-,
J

.

: PIC 810

_.J

: PIC 811
I

PIC 810

Yoke

J
' -_ _ _ _ _........ Eollt

UNITRODE CORPORATION· S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

5-27

PRINTED IN U.S.A.

POWER INTEGRATED CIRCUIT

PIC900B
PIC900C
PIC900D

H-Bridge Power Output Stage

5A, lOOV

FEATURES
• Designed and characterized for inductive loads such as
Stepper Motor Drivers
DC Motor Drivers
Full Bridge DC Converters
• Fast switching times with low (5mA) drive current
• Electrically isolated 18 pin dual-in-line package with integral heat spreader
• Compatible with automatic insertion

DESCRIPTION
The PIC900 is a unique hybrid circuit specifically designed to
simplify construction of bipolar stepper motor controls and
fullbridge DC converters. The matched transistors and drMl(s
allow low saturation voltages and consistent thermal resl!ioriile.
The low drive current insures compatibility with ap~pri'at$ •.
driver logic. The hybrid circuit construction lJtilizes ttllCk-fifll\..
resistors on an alumina substrate for ('\1i!xim.;.m therrmu .' . ,.
conductivity and resultant low thetmal impedi!nce. All t""':'
active elements in the hybrid are ftiiliy PMiSivateq. ISQ!Mion
between the active circuitaoo the metal heat spri;i8rler
exceeds 3kV.
"

f·:'

8 11

2 17

MECHANICAL SPECIFICATIONS

OIL· IS

INCHES
A
B

C
D
E
F

G
H
j

K

3/83

5-28

.400
.020
. 600 TYP
.064
1.00
1.10
.800
1.180 MAX.
. 180 MAX.

L

.021
. 100 TYP.

M

.550

MILLIMETERS
10.16
0.51
15.24 TYP.
1.63
25.40
27.94
20.32
29.97 MAX.
4.57 MAX .
.533
2.54 TYP.
1397

~UNITRaDE

PIC900B PIC900C PIC900D

ABSOLUTE MAXIMUM RATINGS
PIC900B
PIC900C
PIC900D
Transistor, Collector-Emitter Voltage,VeEo .......................... _................... 60V ....... _..... SOV ............ 100V
Transistor, DC Collector Current, Ie ................................................ _..................... 5A .................. .
Diode, DC Blocking Voltage ........................................................... 60V ............. SOV ............ 100V
Diode, Forward DC Current ............................................................................. 5A .................. .
Diode, Reverse Recovery Time, tn .................................................................... 50ns max ................ .
Thermal Resistance
Junction to Case, (JJ-e
Power Switch ..... _. . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4.5 0 C/W ............... .
Clamp Diode ................................................................................ 4.5°C/W ............... .
Operating Temperature Range, Te ................................................................. -55°C to +125°C ........... .
Maximum Junction Temperature, T, ... - .. _............................................................ +150 0 C ................ .
Storage Temperature Range ...................................................................... -65°C to +150°C ........... .

ELECTRICAL CHARACTERISTICS (at 25°C unless noted)
PNP Drive
Test

Symbol

Min_ Typ. Max_ Min.

On-State Voltage (Note 1)
On-State Voltage (Note 1)
Diode Forward Voltage (Note 1)
Diode Forward Voltage (Note 1)

VeE

-

VeE
VF
VF

Off· State Current
Off-State Current
Diode Reverse Current
Diode Reverse Current
Current Delay Time
Current Rise Time
Voltage Rise Time
Voltage Storage Time
Voltage Fall Time
Current Fall Time

NPN Drive

-

1.0
1.2

1.5
2.2

-

O.S
1.0

1.1

I ceo

-

0.1

leEo
IR
IR
t.,
tn

-

10
1.0

t"
t"
tf,
tf,

-

-

-

-

1.5
10

-

10
500
90
65
150
50
100
S50 IS00
500 SO~
ISO

400

-

-

-

-

Typ_ Max_
1.0
1.2
O.S
1.0
0.1

1.5
2.2

10
1.0
500

-

90
65

1.1
1.5
10
10

150

-

50
100
S50 IS00

-

500
ISO

-

SOO
400

Conditions

Unit
V
V
V
V
/lA
/lA
/lA
/lA
ns
ns
ns

Ie = 2A, I. = -5mA (5mA)
Ie = 5A, I. = -5mA (5mA)
IF = 2A
IF = 5A
VeE = rated voltage
VeE = rated voltage, TA = 100°C
VR = rated voltage
VR = rated voltage, TA = 100°C

VeE = 50V

ns

Ie = 2A

ns
ns

I. = 5mA

NOTE: 1. Pulse test: duration = 300ps, duty cycle"" 2%.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

5-29

PRINTED IN U S.A

•

PIC900B PIC900C PIC900D

Forward Bias Safe Operating Area

Power Dissipation

10

40

5
4
3
2

lOpS,',;!;:

~

DC

1ms ' "
10% DUty~

~Cycle

>-

as

10% Duty
Cycle

~
z

~

0

~
iii
::J 0.2
Q.

'"u'"::J

Ci

>::J

OJ

0

0:
OJ

3:

35
30
25

1"'-

20

~

Tc·100°C

~

01

I
.05
.04
.03
.02

~

PIC900B

.01

1

4 5

10

20

30

50

10

I

ri'

PIC900C

~

15

r
o
-50

-25

25

ON·STATE VOLTAGE (V)

'"

100

125

150

Switching Losses - Single Switch
Vee = 50V
1-1,.5mA
f·20kHz
Tc ·25°C

Tc -100°C-

/

MlxlMUM

...

~
fZ

~
[1l

05

0:



I,; ,", 2 '
,.,

~

UESIOOI
V~;' .895 @ lA
t",
25ns

Vii'

t,;;'

UESI003
.895 @ lA
25ns

IN5802*
UESllOl
.895 @ 2A
25ns

IN5807*
UES1301
UES1401
UES1501
.850 @ 6A .895 @ 8A .975 @ 16A
30ns
35ns
35ns

IN5803
.895 @ lA
25ns

IN5808
,850 @ 6A
30ns

IN5804*
UESll02
.895 @ 2A
25ns

IN5809*
UES1302
UES1402
UES1502
.850 @ 6A .895 @ 8A .975 @ 16A
30ns
35ns
35ns

IN5805
.895 @ lA
25ns

IN5810
.850 @ 6A
30ns

IN5806*
UESll03
,895 @ 2A
25ns

IN5811*
UES1303
UES1503
UES1403
,850 @ 6A ,895 @8A .975 @ 16A
30ns
35ns
35ns

UESll04
1.15 @ lA
50ns

UES1304
1.15 @ 3A
50ns

UESll05
1.15 @ lA
50ns

UES1305
1.15 @ 3A
50ns

UESll06
1.15 @ lA
50ns

UES1306
1.15 @ 3A
50ns

UES1504
.975 @ 16A
35ns

"Available as JAN. JANTX. JANTXV

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6·4

Pnnted in U.S.A.

PRODUCT SELECTION GUIDE

ULTRA-FAST RECOVERY (trr - 25 to 50ns)

•

IN5812*
UES701
.825@25A
35ns
IN5813
:825@25A
35ns
IN5814*
UES702
UES2602
.825@25A .825@ 1
35ns
35ns

IN6305
UES802
.84@70A
50ns

IN5815
.825@25A
35ns
IN5816*
UES703
UES2603
.825@25A .825@ 1
35ns
35ns
UES704
1.15 @20A
50ns

UES804
UES2604
1.15 @ 15A 1.15 @ 50A
50ns
50ns

UES705
1.15 @ 20A
50ns

UES2605
UES805
1.15@ 15A 1.15 @ 50A
50ns
50ns

UES706
1.15 @ 20A
50ns

UES2606
UES806
1.15 @ 15A 1.15 @ 50A
50ns
50ns

IN6306
UES803
.84@70A
50ns

*Available as JAN, JANTX, JANTXV

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

6·5

Printed in U.S.A.

RECTIFIERS

A

B

SUPER-FAST RECOVERY (t" - 75 to lOOns)

UTXl05
1.00 @ .5A
75ns

UTX205
1.0V@ lA
75ns

SES5001
.975@ lA
lOOns

UTX3l05
lV@2A
lOOns

UTX4l05
lV@3A
lOOns

UTXll0
l.OV@ .5A
75ns

UTX2l0
l.OV @-lA
75ns

SES5002
.975@ lA
lOOns

UTX3llO
l.OV @ 2A
l-OOns

UTX4ll0
l.OV @3A
lOOns

UTX115
1.00 @ .5A
75ns

UTX2l5
1.0V@ lA
75ns

SES5003
.975@ lA
lOOns

UTX3115
l.OV@2A
lOOns

UTX4115
l.OV @3A
lOOns

UTX120
l.00@ lA
75ns

UTX220
l.OV@ lA
75ns

UTX3l20
1.0V@2A
lOOns

UTX4120
1.0V @3A
lOOns

UTX125
l.00 @ .5A
75ns

UTX225
l.OV@ lA
75ns

SES5401
1.025 @ SA
lOOns

SES540lC
SES5501
1.025 @ SA 1.025 @ l6A
lOOns
lOOns

SES5701
.S3 @ 20A
lOOns

SES5601C
.S3 @ l2.5A
lOOns

SES5S0l
.S5 @ 60A
lOOns

SES5302 .
SES5402
.975 @ 5A 1.025 @ SA
lOOns
lOOns

SES5402C
SES5502
1.025 @ SA 1.025 @ l6A
lOOns
lOOns

SES5702
.S3 @ 20A
lOOns

SES5602C
.S3 @ l2.5A
lOOns

SES5S02
.S5 @ 60A
lOOns

SES5303
.975 @ 5A
lOOns

SES5403
1.025 @ SA
lOOns

SES5403C
1.025 @ SA
lOOns

SES5503
1.02 @ l6A
lOOns

SES5703
.S3 @ 20A
lOOns

SES5603C
.S3 @ l2.5A
lOOns

SES5S03
.S5 @ 60A
lOOns

SES5404
1.025 @ SA
lOOns

SES5404C
1.025 @ SA
lOOns

SES5504
1.02 @ l6A
lOOns

SES5301
.975 @ 5A
lOOns

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

6-6

PRINTED IN USA

PRODUCT SELECTION GUIDE

A
FAST RECOVERY (t" -

150 to 500ns)

,,~D.C.
.·~\ltCUl'r$l1t

1A

.,~~c_Style

vF

,.;:~v

t,..

.'.

.

Il~' vp

'.

~,

.:,"
<.

."".

,

I:~.,·

,,,

'v
, .trr
I . 200v'
.:"
F

,

S "'

··:1

'

','.

,4.

,. •• :c..•.

.'

,
.. 400V

50lW'

.?Vy,,;

;,J.,

If

C

IN5415*

UTR4305

l.1V @ ,5A
250ns

LlV@ lA
250ns

LlV@3A
250ns

1.5V@9A
150ns

LlV@4A
250ns

UTR4405
UTR5405
UTR6405
LlV@6A
300ns

UTRll

UTR12

UTR3310

IN5416*
IN5186*'

UTR4310

LlV@,5A
250ns
UTR21

LlV@ lA
250ns

LlV@3A
250ns
UTR3320

1.5V @ 9A
150ns
IN5417*
IN5187*'

LlV@4A
250ns
UTR4320

'

IN4942*
IN5615*

UTR22

LlV@,5A
250ns
UTR31
LlV@,5A
300ns

l.3V@ lA
150ns

LlV @ lA
250ns
UTR32
LlV@ lA
300ns

LlV@3A
250ns

1.5V @ 9A
150ns

LlV@4A
250ns

UTR41

IN4944*
IN5617*

UTR42

UTR3340

IN5418*
IN5188"

UTR4340

LlV@.5A
350ns

1.3V @ lA
150ns

LlV@ lA
350ns

LlV@3A
300ns

1.5V@ 9A
150ns

UTR52
LlV@ lA
400ns

UTR3350
LlV@3A
350ns

IN5419*
1.5V@9A
250ns

UTR62

UTR3360

LlV@ lA
400ns

LlV@3A
400ns

IN5420'
IN5190"
1.5V@ 9A
400ns

LlV@4A
400ns
UTR4350
LlV@4A
400ns
UTR4360

UTR51
iV,{' LlV@,5A
.tn. ;
400ns
UTR61
::
,.

·W,

·tn, '

6-9A

UTR3305

A

.

,-",'

600\1

..

.-

UTR02

J

'.

.....

'vF

• BO()Y

'41\

3A

UTROI

:".:.,'

;","

3A

8

,

I' .

2A

B

"

)

lA

A

A

"

.....

B

LlV@.5A
400ns

IN4946*
IN5619'
1.3V @ lA
250ns

UTR4410
UTR5410
UTR6410
LlV@6A
300ns
UTR4420
UTR5420
UTR6420
LlV@6A
400ns

UTR4440
UTR5440
UTR6440
LlV@6A
500ns

LlV@4A
400ns

'Available as JAN, JANTX, JANTXV
"Available as JAN, JANTX

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6·7

PRINTED IN U.S A

RECTIFIERS

JAN &JANTX IN3611-1N3614

Military Approved, 1 Amp,
General Purpose
FEATURES

DESCRIPTION

•
•
•
•

This series of MIL approved JAN and
JANTX general purpose lamp rectifiers are
useful in many high rei applications.

Qualified to MIL-S-19500/228
Continuous Rating: lA
Surge Rating: 30A
PIV: to 800V

ABSOLUTE MAXIMUM RATINGS
Peak Reverse Voltage Min.

Reverse Working Valtag.

240V
480V
720V
920V

200V
400V
600V
800V

Type

JAN
JAN
JAN
JAN

& JANTX IN3611
& JANTX IN3612
& JANTX IN3613
& JANTX IN3614

Maximum Average D.C. Output Current
.. 1.0A
@ TA == lOO'C .
O.3A
@ TA == 150'C
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
................. 30A
Operating Temperature Range.
.
.................................. -65'C to +175'C
Storage Temperature Range
.... -WC to +200'C
Thermal Resistance
... See Lead Temperature Derating Curve

MECHANICAL SPECIFICATIONS
JAN & JANTX1N3611-1N3614

I

Band indicates

1.-155" TYP ....I
028" -:'.001
3.9mm
0 7lmm ~ 03

--->. _"t~·eni:JJt
°i~~'':~P

1

D

I·
i
I

It>----178:~ -r----_

)1:1: .A0
H

o~~;~~~x.

_ _ _- , -

l-oasT--

t'----j---L-

250" MAX

I

r;V;~m"

:

700" MIN!

BODY A

6,3Smm --------,

1.625" MIN
413mm

I
I

6-8

~UNITRODE

JAN & JANTX IN3611-1N3614

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Maximum D.C.

Minimum

Reverse

Reverse
Type

JAN
JAN
JAN
JAN

Peak
Reverse
D.C. Voltage

Breakdown

200V
400V
600V
BOOV

240V
4BOV
720V
920V

& JANTX IN3611
& JANTX IN3612
& JANTX IN3613
& JANTX IN3614

Voltage
@ 100#A

L=

::!a:

<)

....:
;::2
...
...
"...
~ 1
...
Q

~ ..

4
3.5

.....
~

III

'""'" ~
~~

I

"#

~

..2

60

50
75
100
125
150
TL - LEAD TEMPERATURE ('C)

I

•

I
I

Turret 1" centersf--f-+-I-+++1f+1"~~*-+-1 Turret W· centers~~
Printed Circuit

?:

"'

40

t---

20

o
10
100
CYCLES AT 60 Hz HALF SINE WAVE

.·5

1,000

175

Typical Reverse Current vs PIV
.001
.002

2

.5

;;

.005
.01

...

.02

V-

.:;

I

...z
<)

.05
.1
.2

III

.5

II::

...

Z .2

a:

:>

I/!"' ,(.J~~(.J
$ ~ id:-f-

~ .1
:>

<)

I

11IIII

10

...

300pA

I III

80

Typical Forward Current
vs Forward Voltage

:5:

IpA

@l.OA

o

~~

2S

150'C

Q

'" ."-

II::

"z
~
...a:
":>
...
.:
II::

............ 1'-...

II::

I

2S'C

l.1V(pk)

O.6V

III

L=~ I~

<)

Max.

Allowable Forward Surge vs Number of Cycles

,f~

:>

at D.C. Voltage

100

~

3

I

Min.

Maximum Current
vs Lead Temperature

...:5:z

Current

Peak
Forward Voltage

'Iii i

.05

I
-'"".02

/

.01
.005

/

.002
.001

.2

.4
V, -

I

-I

II::

,.

+ 7S'C

10
20

I

I

~125'C

50
100

Ii
.6
.8
1
VOLTAGE (V)

./
-+2S'C

....... r-

W

I

II
/

...
...>a:

....-'
SO'C

150

1.2

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6S09 • TELEX 95-1064

100

50

% OF PIV

1.4

6-9

PRINTED IN U.S.A.

RECTIFIERS

1N4245-1 N4249
JAN, JANTX &JANTXV

Military Approved, 1 Amp,
General Purpose
FEATURES
• Qualified to MIL-S-19500/286
• Surge Rating: 25A
• PIV: to IOOOV
• Controlled Avalanche
• No Plastic, Epoxy, Silicone, Oxides, Gases or Solder are used

DESCRIPTION
This series of general purpose power
rectifiers are available as JAN, JANTX or
JANTXV for many power supply applicatons.

ABSOLUTE MAXIMUM RATINGS
Maximum Reverse VOltage

Type

200V
400V
600V
800V
lOOOV

JAN,
JAN,
JAN,
JAN,
JAN,

JANTX, JANTXV IN4245
JANTX, JANTXV IN4246
JANTX, JANTXV IN4247
JANTX, JANTXV IN4248
JANTX, JANTXV IN4249

Maximum Average D.C. Output Current
@ TA =. IOO'C. .. . ...... ... .... .
........ l.OA
@ TA
I50'C
.................... .
..... O.333A
Non-Repetitive Sinusoidal
Surge Current .
............ 25A
Operating Temperature Range
.. -65'C to +175'C
Storage Temperature Range.
.... -65'C to +175'C
Thermal Resistance ....
..................... See Lead Temperature Derating Curve

=

MECHANICAL SPECIFICATIONS
J, JT)(, JTXV lN4245-1N4249

I

---.:t.

Sand Ind,cat~!"'"

cathode e~

1

I

155" TYP
3,9mm....

BODYA

028" ...... 001

O.71mm':=.03

i

f

1/79

6-10

~UNITRDDE

JAN, JANTX, JANTXV IN4245·1N4249
ELECTRICAL SPECIFICATIONS (at 25"C unless noted)

Type

Minimum
Reverse
Breakdown
Voltage

PIV

@ 100~A

J,
J,
J,
J,
J,

JTX, JTXV 1N4245
JTX, JTXV IN4246
JTX, JTXV IN4247
JTX, JTXV IN4248
JTX, JTXV IN4249

== !f2A

*Measured In circuit IF

240V
480V
720V
960V
1150V

200V
400V
600V
BOOV
1000V
t

=

IR

1.0A, I REC

Max.

Min.

1.3V(pk}
0.6V
@3.0A(pk}

I

002

::>'

V-

~

I

w

z>-

....

Z .2

w
~ .1

/iV~ :;:8 'l.i'4~I-e-

::>

<.>.05

li /

I
.,-.02

II

.01
.005

II

II

.001
.2

<.>

.......

....o

+25°C

"...

Ul

>

w
a:

~5OC

10
20

"a:

80

'-'
a:
::>

60

~
I

.6

1

V, -

VOLTAGE (V)

1.2

25

50
T, -

~
-........
~~

""

IIIII

~

--..::::

~~

40

o

.5

100

125

ISO

175

LEAD TEMPERATURE (OC)

Reverse·Recovery Circuit
10 \J

Q

+

Turret liz" centers
Printed Circuit

_
-=-

25Vdc
(APPROX.)

r---

I!l

NOTE3

r-.:::::: f:~

20

75

0

OSC I LLOSCOPE
NOTEI

NOTES:

"if
10

100

1.000

1. Oscilloscope: Rise time r; 3n5; input impedance = 50H.
2. Pulse Generator: Rise time
8nsi source im~edance IOU.
3. Current viewing resistor, non-inductive, coaxial recommended.

c:

CYCLES AT 60 Hz HALF SINE WAVE

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710Y 326·6509 • TELEX 95·1064

6·11

...

Uj

ALL SERIES

I I
JTurret
IIII
I I
1" centers

OJ

VJ

1

1.5

1'\

1.4

"'-l"-

0

....

~

50

100

50

VJ

c::;

""

I"" ."-

% OF PIV

.4

OJ

"';:

L=~

~,

"a:

Allowable Forward Surge vs Number of Cycles
100

~~~

OJ

~25;C
150

3.5

'-'

1

50
100

4

""l

;:

;:: 2
<.>

I

II
_8

~ 3
a:
::>

/

W
0:

/ I

....
Z

0:
W

I

I

.002

e-

<.>
w

L =W'

~

50'C

.05
.1
2

::>

-{'-' 0'-' '-' '-'

1.......-

005
01
.02

0:
0:

•

Maximum Current
vs Lead Temperature

.001

.5

5.0,,5

150"A

Typical Reverse Current vs PIV

10

'-'
Z
;::

1.0"A

Time*

== JAA

Typical Forward Current
vs Forward Voltage

5:

Maximum
Reverse
Recovery

Maximum
Reverse
Current
25°C
150°C

Forward
Voltage

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV IN4942
JAN, JANTX, & JANTXV IN4944
JAN, JANTX, & JANTXV IN4946

RECTIFIERS
Military Approved, 1 Amp,
Fast Recovery
FEATURES
• Qualified to MIL-S-19S00/359
• Surge Rating: 15A
• PIV: to 600V
• Controlled AValanche

DESCRIPTION
These fast recovery rectifiers are suitable
for use as power devices for many applications. Devices are available as
JAN, JANTX or JANTXV.

ABSOLUTE MAXIMUM RATINGS
Maximum Rlve ..e Voltap
200V
400V
600V

Type

JAN, JANTX, & JANTXVIN4942
JAN, JANTX, & JANTXV IN4944
JAN, JANTX, & JANTXV IN4946

Maximum Average D.C. Output Current
@ T... :: 55'C ....................................................................................... 1.0A
@ T... :: l00'C .................................................................................. O.75A
Non-Repetitive Sinusoidal
Surge Current (8.3ms) ......, .................................................................... 15A
Operating Temperature Range ...................................................................... --65'C to +175'C
Storage Temperature Range ............................................................................ --65'C to +175'C
Thermal Resistance .................................................. See Lead Temperature Derating Curve

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 1N4942. 1N4944. 1N4946

1

Band indicated,
cathode end

.OSS" TVI'. [ ]
l.4mm

1

&:

i

1S5N TYP

"'1

3.9mm·...

028" .... 001

O.71mm'=.03

~

111

BODY A

:l 0

.085" MAX.
2.16,tm

~.085"
TYP.

2.2mm

~.1~:~~:nN. i'-2W.;~~~
1.625" MIN.
41.3mm

1/79

6-12

~UNITRODE

JAN, JANTX, & JANTXV IN4942, IN4944, IN4946
ELECTRICAL SPECIFICATIONS 

~
~

u;:

r---..... ~ t\.

~
I

.$

~

lSO

~
....
z

::E

'"'"
c'II"'

t-

"cr:
UI

IVVV
Iii;''' ." t'."
!If! f
II II I

.2

0:
0:

u.05

I
_".02

II

.01
.005

/

.002

0

175

:<
.:;

vvVv1//

.5

0

LEAD TEMPERATURE ('C)

I

.001

.2

.4
V, -

....

.02

:::l


W

0:

I

II

.--

50'C

W

+75'C
10
20

1/

/

~2$'!(

50
100

I

150

.6
.8
1
VOLTAGE IV)

1.2

100

50

% OF PIV

1.4

Characteristic Waveform.

10 \I

+0.5A

+
_
-=-

45pf
35pf
25pf

.005
.01

w

Z

Reverse-Recovery Circuit
SOQ

150ns
150ns
250ns

.001
.002

z

UI

Capacitance
@V.=12V
f = IMHz

Typical Reverse Current vs PIV

10

1.5 AMP SERIES

>:::l
-

z

"'~

[/11

Il'o
~ ~/';:,

,2

,002
,001

"'a:
"'>
"'a:
III

[I

,01
.005

/ 1/

II
~

A
V, -

-'

C::::;::;;-+2S'C

"1
I ....

10
20

C::::;::;;-+7S'C

50
10O
200

"/
[A12S'C

500

I
~

~-5O'C

::l
0

II /

I

-,",,02

,S

"'

~ "f.~ "/~/V)
"/I

.1

::l

z>-

-

a:
a:

00

0,05

.3

;(

/

~ .5

,05
.1
,2

1.000

•

I
VOLTAGE {VI

UNITRODE CORPORATION, 5 FORBES ROAD
LEXINGTON, MA 02173 ' TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

I~

150

14

6-15

100
50
% OF PIV

PRINTED IN U.S.A.

•

RECTIFIERS

IN5415-1N5420
JAN, JANTX & JANTXV

Military Approved, Fast Recovery, 3 Amp

FEATURES
• Qualified to MIL-S-19500/411
• PIV: to 600V
• Controlled Avalanche

DESCRIPTION
This series of devices as designed to meet
the need for high speed, power rectifiers
in military high-rei power supplies.

ABSOLUTE MAXIMUM RATINGS
Peak Invane Valtage

Type

JAN, JANTX, JANTXV IN5415
JAN, JANTX, JANTXV IN5416
JAN, JANTX, JANTXV IN5417
JAN, JANTX, JANTXV IN5418
JAN, JANTX, JANTXV IN5419
JAN, JANTX, JANTXV IN5420

50V
lOOV
200V
400V
500V
600V
Maximum Average D.C. Output Current
@ TA = 55'C
@ TA
lOO'C
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating Temperature Range
Storage Temperature Range.
Thermal Resistance e JL @ L = %" ..

.. 3.0A
... 2.0A

=

...... 80A
................................ -65'C to +175'C
........... -65'C to +200'C
.. ....... 2O'C/W
See Lead Temperature
Derating Curve

MECHANICAL SPECIFICATIONS

J, JT)e, JTXV 1N5415-1N5420

BODY B

Dimensions in inches.

6-16

~UNITRDDE

JAN, JANTX, JANTXV lN5415 ·lN5420
ELECTRICAL SPECIFICATIONS (at 2S'C unless noted)
Minimum

Type

Reverse
Breakdown
Voltage
@5O#A

PIV

50V
l00V
200V
400V
500V
600V

J, JTX, JTXV lN5415
J, JTX, JTXV lN5416
J, JTX, JTXV lN5417
J, JTX, JTXV lN5418
J, JTX, JTXV lN5419
J, JTX, JT!

u

I
-"

nov
220V
440V
550V
660V

=

150
150
150
150
250
400

1.5V(pk)

0.6V

1.0"A

@9Adc
tp 300"s

20"A

=

lA, I.EC =0.25A.

Typical Forward Current
vs. Forward Voltage
20K
10K
5K

~O!C V;.....r

I

~

2K
;: IK
Z 500

I-'"
+25'~

,;, I'-.§>~o
~

I 50
_.... 20

If

II

...

I?

/1/

II

~ 200

i3 100
+100'C

'J

/

OJ

.0

1- jrf ~

10
5

III
II

2

.2

.4

+150'C

IIA "
.6.8
1.2
V, -VOLTAGE(V)

1.4

1.6

J
100

50

Maximum Power

% PIV

VS. Lead Temperature

~

~ 20
~
;;: 18
2 16
l-

e::

14

o 10
~

~
a.

:;;;

Maximum Current vs. Lead Temperature
( =

L = .125,

l~~
.Y

.............

rL - .750

55
TL -

"

..........

95

Le~d Le~gth

X
~

from Body-

""

....... ---,
........... ......

75

i

135

Tl
R8JL

TI -

I.,...." (I I

~ r-..
-4:... _t--

8
6

750.....

4

I I

2
0
0

t-

t-j../:.

N-J
1\% r+"+\

I'.

~

I"-- "- 1\
.....
r-r:::: :--,l

.500
IL
1"'1""
25
50
75 100 125 150 175
TL - LEAO TEMPERATURE ('C)

Reverse .. Recovery Circuit
SOil

......... [',.
-.........:: ~

115

Plmaxl -

K

~J-'N..".

~ 12

35

100'C

55V

Typical Reverse Current vs. PIV
.0001
.0002
.0005
.001
.002
.005
.01
.02
.05
.1
.2
.5
1
2
5
10
20
50
100
200
500
1000
ISO

Maximum
Reverse
Recovery
Time*

Reverse
Current

Forward
Voltage

~

ISS

10 II

+

175

_
-=-

LEAD TEMPERATURE ('C)

25Vdc
(APPROX.)
III
NOTEl

OSCILLOSCOPE
NOTEI

NOTES:
1. Oscilloscope: Rise time ~ 3ns; input impedance = sou.
2. Pulse Generator: Rise time ~ 8ns; source imlledance IOU.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861 ..6540
TWX (710) 326 ..6509 • TELEX 95.. 1064

6 .. 17

PRINTED IN U.S.A.

RECTIFIERS

1N5550-1 N5553
JAN, JANTX & JANTXV

Military Approved, 5 Amp,
General Purpose
FEATURES
• Qualified to MIL-S-19500/420A
• Continuous Rating: 5A
• PIV: to BOOV
• TX Parts 100% Screened
• Miniature Size
• Controlled Avalanche

DESCRIPTION
This series of military approved rectifiers
is useful in many military applications.
The 100% screening requirements in the
"TX" version combined with the unique
Unitrode construction assures the highest
degree of reliability.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

Type

200V

JAN,-JANTX & JANTXV 1N5550

400V
600V

JAN, JANTX & JANTXV 1N5551
JAN, JANTX & JANTXV 1N5552
JAN, JANTX & JANTXV 1N5553

BOOV

Maximum Average D.C. Output Current
@ TA = 55'C
@TL =55'C .......... .
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating Temperature Range
Storage Temperature Range .
Thermal Resistance

................................ .

....................... 3.0A
.. ............................................. S.OA
................................ 100A
........................ -65'C to +175'C
..... -65'C to +200'C
See Lead Temperature Derating Curve

MECHANICAL SPECIFICATIONS

J, JTX, JTXV 1N5550-1 N5553

6-18

BODY B

~UNITRDDE

JAN, JANTX, JANTXV IN5550-IN5553
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Maximum

Type

Peak
Inverse
Voltage

Minimum
Reverse
Breakdown
Voltage @ SOpA

J, JTX, JTXV IN5550

200V

240V

J, JTX, JTXV IN555I

400V

460V

J, JTX, JTXV IN5552

600V

660V

J, JTX, JTXV IN5553

800V

880V

Leakage
Current
@ PIV

Peak Forward
Voltage
Min.
I Max.

0.6V

2S'C

100 C

Time*

I.O"A

75"A

2.0"s

1.2V

@

IF

Maximum
Reverse
Recovery

== 9A(pk)
(8.3ms)

*Measured in a test circuit IF =o.5A, IR =::: 1.OA, tREe = O.2SA

Maximum Power Dissipation
vs. Lead Temperature

Maximum Current vs. Lead Temperature

'""
ii:
>=

$

'"0:

2

U

~ = Le~d

L = .12~

L=~

l~

I-

'"'" ::;,'"
'"'"

........
"..........

l"----

L d.7S0

0:
0:

Le'ngth

from Body-

0: U

o:~

"';:
;:-

'" I'"

,,2

0.."
:;:>=

::;,'"
:;:!!:

t--. f'-..- J".,

-V>
XV>

"'-"

]"--.:~

>

'"

55
TL -

75

95

115

135

155

/

L

175

.2

'"::;,

.5
1

0:
0:

u

..-

-

_r-

10
20

I
~

f.--'

SO

100
200

_t'"

SOD

1000

.-25'C

E.

+0.5A

I-

200

'"0:0:

100

u

50

::;,

75'C

"
;:
'"
"

r--'

17S

0:

20

0:

10

125'C

50'C

I

J 1/ I
I

/ /

j
I

1

SO

25'C

I /
II / /

LL

o

/ /
II

1
I

0.25
V, -

0.5

0.75

1.0

1.25

1.5

FORWARD VOLTAGE (V)

Reverse-Recovery Circuit

~

50

n

101/

'\

-

OA
-0.25A

+

===

/

(A~~~g~.) 0-----,
1 \l

/

-1.0A

150

III /1/

2

V

/1

I

1/ /

;(500

Characteristic Wave Form
t"

125

~W
V;-jV

1,000

% OF PIV

-1

100

LEAD TEMPERATURE ('C)

100'C

-"

100

I

L=.37~~
~L=.500-

75

SO

5,000

I
150

......,

ReJL

:::-- ::::;.<..
r--:: :::::::::::~

10,000

2,000

0:
0:

ro

/'
I""-

175'C

'"V>
'"~

t'-....

I
I
I

L = .2S0

Typical Forward Current YS.
Forward Voltage

50'C

.OS
;(
.:; .1
2

P(max} :::: TJ - Tl

t::---

TL -

Typical Reverse Current vs. PIV

I-

t--.
t--.

25

LEAD TEMPERATURE ('C)

.01
.02

--

l-

:;:

~

35

20
18 I--L = .000
16
...........
14
f"--...
12
10

\V

NOTE3

H-'cm
SET TIME BASE

NOTES:

FOR 500ns/ em

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 9S-1064

OSCILLOSCOPE
NOTEl

1. Oscilloscope: Rise time t; 3n5; input impedance:::: SOH.
2. Pulse Generator: Rise time::; Bns; source impedance 10\1.
3. Current viewing resistor, non-inductive, coaxial recommended.

6-19

PRINTiP IN U.S.A

RECTIFIERS

IN5614, IN5616, IN5618,
IN5620,
JAN, JANTX & JANTXV

Standard Recovery, 1 Amp
Military Approved
FEATURES

DESCRIPTION

• Qualified to Mll-S-19500/427
• PI V: to BOOV
• Controlled Avalanche

This series of medium power general
purpose rectifiers can be used in the
most demanding military supplies.
Rugged mechanical integrity and tight
electrical parameters make them
particularly useful.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

Type

200V
400V
600V
800V

JAN, JANTX & JANTXV IN5614
JAN, JANTX & JANTXV IN5616
JAN, JANTX & JANTXV IN5618
JAN, JANTX & JANTXV IN5620

Maximum Average D.C. Output Current
@ TA =55'C.

............... 1.0A
..... O.75A

@ TA =,lOO'C ............ .
Non-Repetitive Sinusoidal
Surge Current (8.3ms) ..
Operating Temperature Range.
Storage Temperature Range
Thermal Resistance e JL @ L

=%" .................

.................. 30A
. -65'C to +175'C
.... -65'C to +200'C

......... 38'C/W
See Lead Temperature
Derating Curve

MECHANICAL SPECIFICATIONS
J, JTX, JTXV lN5614, lN5616, lN5618, lN5620

1/79

6-20

BODY A

~UNITRODE

JAN, JANTX, JANTXV IN5614, IN5616, IN5618, IN5620

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Minimum
Reverse

Maximum

Type

PIV

Breakdown
Voltage
@ SO#A

J, JTX, JTXV IN5614

200V

220V

J, JTX, JTXV IN5616
J, JTX, JTXV IN5618
J, JTX, JTXV IN5620

400V

440V

600V
800V

660V
880V

*Measured in Circuit IF

= lilA,

IR

= l.OA,

'REG

Forward
Voltage
Min.

0.8

~

Maximum

Reverse

Reverse

25°C

l00'C

Recovery
Time*

0.5"A

25"A

2.0,,5

Current
Max.

l.3V(pk)
@3.0A
tp = 300,,5

= JAA

II
Typical Reverse Current VS. PIV
.0001
.0002
.0005
.001
.002
.005
::< .01
.3 .02
I- .05

Typical Forward Voltage
vs. Forward Current
10K
5K

~

~I?::

2K

::<

I/V
JIIII
j
1/1/
oi.JL~ t.., ,

"'-

u

o

L=~

"';:::u::

u

"'~
"'><

.............

I

50

75

T, -

~

~..

~

en

o

6

~.. ~ i""

0:

~ 4

:i:

::;:

::>
:;

X
<
:;

r---...... ~ '\.

100

125

10
20
50
100
200
500
1000

.5

~

ISO

1

°

I

..J....

+l50'C

I

ISO

100

50

175

% PIV

Typical Forward Voltage
VS. Forward Current '
10K
5K

p(m~.;= T,-T~_

2K

...~500

I .1 I I I
Lr Lead Length
from Bod~
r~

-

~~

~ lK

°Jl

~ 200

I

~ 100

I

::> 50

.500"

u

I~L='.750" - .375";--"
~
-4. :r-+-::: "::l':z. .......
-.:: t:::: ~ ~
-T1jOO';

25

m.L

2
5

LEAD TEMPERATURE ('C)

I I
I I

z
a
;:::

!Q

I
-"

Maximum Power
vs. Lead Temperature
10

+25'C /..

g;

..........

.2

25

.05

I .5
0_"" 1

..................... ......... ~

0:

.02

./

~< .1
cr.3 .2

L~ ~

"'0:

.3

...

SO'C

50
75
100
125
150
TL - LEAD TEMPERATURE ('C)

I 20
-" 10

"'"

IV

/

'J

/

1j/J
d
J<>fJ-lI/'
/J

y. y.

.2

175

...

.4

.6

.8

1

1.2

1.4

1.6

V, -VOLTAGE(V)

Reverse·Recovery Circuit
SOil

10 !!

+
_
-=-

25Vdc
(APPROX.)
III
NOTE3

OSCILLOSCOPE
NOTEI

NOTES:
1. Oscilloscope: Rise time::;;: 3n5; input impedance = 500.
2. Pulse Generator: Rise time ~ ans, source impedance 10n.
3. Current viewing resistor, non-inductive, coaxial recommended.
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6·23

PRINTED IN U.S.A.

•

RECTIFIERS

IN5802-1N5806
IN5807-1N5811
IN5812-1N5816

High Efficiency, ESP, 2.5 Amp to 20 Amp
FEATURES
• Exceptional Efficiency
• Low Forward Voltage
• Extremely Fast Reverse Recovery Time
• Extremely Fast Forward Recovery Time
• High Surge
• Small Size
• Rugged, High Current Termination
• Radiation Tolerant

DESCRIPTION
This series of High Efficiency Power
Rectifiers allows circuit designers to
deSign high current, high frequency suppi ies to 500 kHz with very low diode losses.
The high forward surge capability makes
these devices useful in protective circuits.

ABSOLUTE MAXIMUM RATINGS
2.1 Amp

lAmp

Ped In ...,.. Volta,.

Se,le.

Series

Series

flJV
75V
lODV
l25V
lfIJV

lN5802
lN5803
lN5804
lN5805
lN5806

lN5807
lN5808
lN5809
lN58l0
lN5811

lN58l2
lN5813
lN58l4
lN58l5
lN5816
I .. AMP
SERIES

2.5 AMP

Maximum Average D.C. Output Current
@ TL
75·C, L ~H
@ Tc
lOD·C ..
Non-Repetitive Sinusoidal
Surge Current (8.3ms) ..
Operating and Storage Temperature Range
Thermal Resistance 2.5A and 6A Series ..
lOA Series

=
=

20 Amp

SERIES

=

2.5A .....

20 AMP
SERIES

.. 6.0A ..
• ••••• HH.H.

. 35A.

H

••

H

• • • • • • • • • • • • • HH •••••

125A..

lO.OA

.... 2flJA

-65·C to +175·C.
...... See Lead Temperature Derating Curve
•••••

••••••••••••••••

•

•• H

••••••

3.0·C/W

MECHANICAL SPECIFICATIONS

O

1N58D2-1N5801

BODY A

1N58D7-1N5811

BODY B

015" MAX
216mm

085"
~ TYP'

22mm

700" MIN
178mm

250" MAX

6.JSmm

1 0 - - - - - I ~~~:,:.N

____-
'"
u
Q

'"

;;:
~

u

'"'"

'"
""'"
>
'"
"

I

2.5 AMP SERIES

from Body

5
4

~

r--

'",

5

_,=.A

4

~

.........

II

'\

'" " -"'-

2

\

.........

50

75

100

125

.........
rl

...
z
'" 15
''""
:>
u
...;;:0
~ 10
u
...

\

ISO

175

T, -

LEAD TEMPERATURE C'C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

'"
...;;:o
u

~

o
125

ISO

CASE TEMPERATURE C'C)

6-25

"'"
6

"'i--.
L=~·

~ 4

"'"

"'"

i'....

II:

\

~

i"-.. \

4

i'....

T, -

125

ISO

ti

~

\

"

100

@

....

I
75

.,'"
~

.2
SO

~
~

'\.r\
~
25

10

6

~ 2

175

12

8

I\.

l= .. ··.....",

II:

_0

=from
leadeady
Jnllh

"\

:>

\
100

L

l="'~\.

'"

'""
"...
>
"I
o

\J

10

II:

\\

II:

~ lAMP SERIES

~

lZ

II:

"'" ~\~

25

~

3 _....

l=" """

I--

"0
'".,

@

"'" '"

1\

~

L = Lead Lenllh

12
20 AMP SERIES

"

2

o

175

LEAD TEMPERATURE C'C)

PRINTED IN USA.

IN5802-1N5806

Typical Forward Current
vs. Forward Voltale

Typical Forward Current
vs. Forward Voltale
10

S

100

~~

2.SAMPSERI S

VI

...!z:

I

.S

.2

V

::>

.os

CJ

I

.:

I-

.02

I

01

.oos

..

2

~

1

~

.5

...z

.02

3

4 5 6 7 8 910111213
V, - VOLTAGE IV)

-11II
I

1''''''

81J

!Z...

I1II

~
~~I

:;:'

I

I

"I

5

5

6

7 .8

9 10111213

IA
10-/ ;l-~~

02

II

01

II

II

.....z

i-'

os

I--"

II:
II:

::>

....1--"1-

~
!Z...

T=25'C

II:

&SERIES

I

.:

50
100

1-1--"1--"

~ T=+75 C

(

T _25~C

JL1

1

I

10

TiYl

130120110100 90 80 10 60 50 40 )() 20 10 0
VOLTAGE IN % OF PIV

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

200

1000

T= +25 C

10

20

.: 20

I(

TTY ic

...

T _ +75 C
100

200

6-26

-----

11+125 C ~

5

130 120 110100 90 80 70 60 50 40 30 20 10 0
VOLTAGE IN % OF PIV

20 AMP SERIES

A-soc

......

.... ~

100

1...-1--" ....

I

-I- -f--

::>

... 1-1-110

-

I

01

02

/'

0:

/

v

I

I

Typical Reverse Current
vs. Voltage

01

<
.3

~J I

::;:.

123456789101112131415
V, - VOLTAGE IV)

Typical Reverse Current
vs. Voltage
01

:;

05

V j -VOLTAGE (V)

2.5_AMP SERIES

r--f- ~Vf "Vu
r--r ~ it I ~
II

02
4

lij II

I

II

2 .3

V V II

2

II:
II:

::>

II I

Typical Reverse Current
vs. Voltale
.001

10

g

--~ -k" iJ"

.os

I

01

2

II

.: .2

001

I

I

I

I

II

I I

.002

III

20

'/1/
/
I

g

....-::;::: ;::::F'
V/~

20 AMP SERIES

50

..-:::::: ~~

20

f~ ~15-1~I

II:
II:

100

10

IN5812-1N5816

Typical Forward Current
vs. Forward Voltage

lAMP SERIES

so

//
/ / III
g

IN5807-1N5811

1000

125

100

75
50
VOLTAGE IN % OF PIV

./

f-""

V
2S

PRINTED IN U.S A.

IN5802·1N5806

Reverse·Recovery Time Circuit

IN5807·1N5811

IN5812·1N5816

Characteristic Waveform

I,

.

t"

r--

~

•

IREC

I

I

I

I,

LI
SET TIME BASE
FOR 5 NS/CM

NOTES:
1. Oscilloscope: Rise time ~ 3 ns; input impedance:::::; 50 !2.
2. Pulse Generator: Rise time:::; 8 ns; source impedance 10 \!.

Forward Pulse Current VS. Duration

Multiple Surp Current VI. Durltion

10,00:1

100

5,000

g

'" 80
Z

~

1,0Cl(}

~

soo

0:

~

...
0:

f'.-.

"'"I'.... ...... ~

eo

'~40
"

::>

"...

I"

0:

~

100

~

50

..

o
1'20

T MOUNT
@L.....

= .."

Nl=:
Ipr'"i

l"-

ed CircUit

10
l,us

Ips

so

10,..s
1001's
PULSE DURATION

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

lOms

1 2

5

10 20

so

100 200

soo

lUOO

CYCLES AT 60 Hz SINE WAVE

6·27

PRINTED IN U.S A.

RECTIFIERS

IN5802, IN5804, IN5806,
IN5807,lN5809,lN5811
JAN, JANTX &JANTXV

Military Approved, High Efficiency,
2.5 Amp and 6.0 Amp
FEATURES

DESCRIPTION

• Qualified to MIL-S-19500/477
• PIV: to 150V
• Low Forward Voltage

This series of high efficiency power
rectifiers are particularly applicable
to switching regulator power supplies
where extremely fast switching and low
forward losses are most important

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

SOV
lOOV
150V

2.SA Series

6.A Series

JAN, JANTX & JANTXV IN5802
JAN, JANTX & JANTXV IN5804
JAN, JANTX & JANTXV IN5806

JAN, JANTX & JANTXV IN5807
JAN, JANTX & JANTXV IN5809
JAN, JANTX & JANTXV IN5811

Maximum Average D.C. Output Current
@TL
75'C, L=%"
@ TA
55'C
Non-Repetitive Sinusoidal
Surge Current (8.3ms) ..
Operating Temperature Range .
Storage Temperature Range
Thermal Resistance, 8 JL @ L =~"

2.5A SERIES

=

............ 2.5A .
1.0A ..

=

. 35A ..

6A SERIES

..6.0A
....... 3.0A

. ... 125A
.-65'C to +175'C ..
.-65'C to +200'C ..
... 59'C/W
35.5~C/W.
See lead temperature derating curve

MECHANICAL SPECIFICATIONS
J, JTX, JTXV 1N5802-1N5806

BODY A

J, JTX, JTXV 1N5807-1N5811

BODY B

Dimensions in inches.

Dimensions in inches.

6-28

~UNITRDDE

J, JTX & JTXV IN5807-IN5811

J, JTX & JTXV IN5802-IN5806
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Minimum
Breakdown

Type

PIV

Maximum
Reverse Current

Voltage

Forward Voltage

@ 100~A

J, JTX, JTXV
IN 5807
J, JTX, JTXV
IN5809
J, JTX, JTXV
IN5811
J, JTX, JTXV
IN5802
J, JTX, JTXV
lN5804
J, JTX, JTXV
IN5806

50V

60V

lOOV

110V

l50V

l60V

50V

60V

lOOV

llOV

l50V

l60V

@

25°C

@

5p.A

l50,uA

.875V Max.
@lA(pk)
.975V Max.
@2.5A(pk)

.8VMax.
@lA(pk)

l,uA

50,uA

30ns

Output Current vs. Lead Temperature

1N5802-5806

l

'\

10

L_lfa"

..........

I
I
~r~:dB~:~gth -

L = Lead

'\

"'"
"",L=~

~

\

"" '" , \

-........

\

-

"",

50
T~

125
150
100
-LEAD TEMPERATURE (Oe)

75

cr 10
;;: 8

"'

~

:;

~"

L_3fe:"

..........

~

""- ~

25

"'o

~ 12

'" '\..
'\.
""" "" "\
L~

"

o

25

175

so
TL -

75

100

~

2

IR = I.OA
IREC = O.lA
di/dt = lOOA/,us min.

25ns
IF = IR = 0.5A
IREC = O.05A
di/dt = 65A/,us min.

:~~g!~

,,-~ I

J
L - .0007

"'" I /

K

'"r--....

L - .2507

~

---1-

•

t-...

4.8

-r--: t:-- :::----...
LL = .750 r--: Il:::::::= ~
I

0

.500../ L

L

25

50

75

""

3.•

~

.375~

100

125

150

2.4
1.2
175

*MAX. LEAD TEMPERATURE t°C)

"'- \

125

20
Z 18

o

'F =

lN5807
IN5809
IN5811

~

i= 16
«
!!: 14

*Maximum lead temperature in °C (T L) at point "L" from
body. (For maximum operating junction temperature of
175°C with equal two-lead conditions.)

""" ."'- \~\

.'\.. \

o

Le~"h_

L -1fB"

\.

"'-

rl

from Body

'\

l=%"

100°C

.8V Max.
@4A (pk)

1N5807-5811

'\

25°C

.875V Max.
@4A(pk)
.925V Max.
@6A(pk)

Output Current vs. Lead Temperature
12

Maximum
Reverse
Recovery Time

@PIV

100°C

"

150

~

175

LEAD TEMPERATURE (ot)

Characteristic Waveform

Reverse·Recovery Circuit

-0

t"

~

I REC

~

T

NOTES:

!
I,

SET TIME BASE
FOR 5 NS/CM

=

1. Oscilloscope: Rise time ~ 3nsi input impedance
sou.
2. Pulse Generator: Rise time:::; 8n5; source impedance IOn.
3. Current viewing resistor, non~inductive, coaxial recommended.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-29

PRINTED IN U.S.A.

•

JAN & JANTX IN5802·1N5806

Typical Forward Current vs. Forward Voltage
JAN & JANTX lN5807·5811

Typical Reverse Current vs. Voltage
JAN & JANTX lN5807·5811

100

.01
.02

50

/ / [/ '/
/ / / I

10

g

...z
"'

J

2

0:
0:

:>
u

I

.1

.02
.01

II I

.1 .2

I(J

!z

2

....- l- I-

:>

'I

'f.

100
200

1000

.5 .6 .7 .8 .9 1 1.1 1.2 1.3
V,-VOLTAGE (V)

=+12S'C

120

-

...-V

-

~

100 90 80 70 60 50 40 30 20 10
VOLTAGE IN % OF PIV

I

.2

V

/./

V

h:-t'1S0Jc

.01

V II II

IIKI!2
,;
;

.1
.05

,0

Kl-

V I . II

.02

/ II

.01

I

1 V

.001
.1

~.OS



=+ 2S'C

i

I

.3 .4

1

T

1- 10-+_:::- ~

0:
0:

?

,/ I V //

.05

~

"'

.... ....§ -/- ~
Il~l'O
I
I
I

I'f.

.2

.2

L /

r1r
50

T

.1

,I ,/ il

~

.5

I
-~

Vi'

V"' I/'
;'"

V
~%
/ ~

20

JAN & JANTX IN5807·1N5811

[
1
120

--

./

-

vi'

100 90 80 70 60 50 40 30 20 10
VOLTAGE IN % OF PIV

a

PRINTED IN U,S.A,

IN5812,lN5814,lN5816
JAN, JANTX &JANTXV

RECTIFIERS
Military Approved
High Efficiency, 20 Amp

FEATURES

DESCRIPTION

•
•
•
•
•

This series is suited for use as a power
rectifier in switching regulator and high
frequency inverter/converter and other
appropriate equipment circuits where low
voltage drop and fast recovery times are
important.

Qualified to MIL-S-l9500/478
Exceptional Efficiency
Mechanically Rugged
Low Thermal Resistance
JAN, JANTX and JANTXV Available

ABSOLUTE MAXIMUM RATINGS
Peak Inver.e Volta.e
SOV

Type
JAN, JANTX, JANTXV lN58l2

lOOV
l50V

JAN, JANTX, JANTXV, lN58l4
JAN, JANTX, JANTXV IN5816

Maximum Average D.C. Output Current

@ Tc

=lOO°C
=

.. 20A
... 5A

@ TA 55°C
Non-Repetitive Sinusoidal
Surge Current @ 8.3mSec .

..... 400A

Thermal Resistance, Junction to Case
Operating Junction Temperature

...... l.SoC/W
....... -65°C to +175°C
... _65°C to +200°C

Storage Ambient Temperature

MECHANICAL SPECIFICATIONS

J, JTX, JTXV lN5812, lN5814, lN5816

mm

ins.
A
B

C
D
E
F
G
H

00-4

.078 MAX.
.437 ± .015
405 MAX.
.800 MAX.
430 ± 010
250 MAX.
424 MAX
.066 MIN DIA

I 98 MAX.
1l.l0 ±0.38
10.29 MAX.
2032 MAX
10 92 ± 0 25
6.35 MAX
1077 MAX.
1.68 MIN. DIA.

Note.'
1.
2.
3.
4.

Polarity is cathode-to-stud.
All metal surfaces tin plated.
Maximum unlubricated stud torque: 15 inch pounds.
Angular orientation of terminal is undefined.

6-31

~UNITADDE

•

JAN, JANTX, JANTXV IN5812, lN5814, IN5816
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Minimum
Peak
Inverse

Type

Breakdown
Vollage @ 100"A

Vollage

J, JTX, jTXV 1N5812

50V

60V

J, JTX, JTXV 1N5814

lOOV

nov

J, JT)(' JTXV 1N5816

150V

160V

Maximum Reverse
Recovery Time @
If, IR, IREe

35nsec 1.0A

-1.0A

...z~

15

.."'
:J

(,)

10

::;

::;

X
~

5

Recovery

Vollage
@ IA Ir = ansec

Junction
Capacitance
@-IOV

15nsec

2.2V

300pf

Maximum

VV ~

20

~ 10

II

§

1'1 /

0:

2

(,)

::;
:J

1

f--

~ 05

~

~

1\

\

/

02

..!: 0 I

005
002
001

175

Typical Reverse Current
vs. Reverse Voltage
.001
.002

V:: E:;::;:;::

50

1\

75Ol'A

Time
@ IA Recovery 10 IV

Typical Forward Current
VS. Forward Voltage

~

1OI'A

Maximum
Forward

100

100
125
150
CASE TEMPERATURE ('C)

.95V
MAX.

lOO'C

Recovery

-0.1 A

\

:J

"::;I

,\\

.86V
MAX.

25'C

Maximum
Forward

Output Current
vs. Case Temperature
20

Maximum
Leakage
·Current
@PIV

Peak Forward
Vollage
@ 10Apk
@ 20Apk

Reverse

II

/

II

."'.

.05
.1
:J .2
(,)

I

"'0:
>
"'

Vl

i7f

'"
0:

I

II

/

J

...z

II

f#'''"
J
~ ~#
~

V

L

--l-1T _+2S'C

.005
:< .01
oS .02

.5
1
2

If-

20
50

I

01234567.8.9101112131415
VF-VOlTAGE (V)

Reverse-Recovery Time Test Circuit

V

5

-" 10

r ~J

I~

+100'C

--

TJ = +125'C
K=+150'C

J

--- VI

LL

I

130 120 HO 100 90 80 70 60 50 40 30 20 10
V, - REVERSE VOLTAGE (% OF PIV)

Characteristic Waveform
~

I"

-.l.-

<-

D.U.T.
IF= lA

III
N.I.
(coaxial)

6-32

=

.1A

I

!
\

NOTES:
1. Oscilloscope: Rise time:::; 3 ns; input impedance = 50 n.
2. Pulse Generator: Rise time::; 8 ns; source impedance 10

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 ' TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

I REC

[0

SET TIME BASE
FOR 5 NSICM

T
I,

=

IA

T

~2.

PRINTED IN U.S A

POWER SCHOTTKY RECTIFIERS

IN5817
IN5818
IN5819

lA, Up to 40V

FEATURES

DESCRIPTION

• Very Low Forward Voltage
(0.45V max @ lA for the IN5817)
• Low Stored Charge, Majority Carrier
Conduction
• Economical, Convenient Plastic Package
• Small Size

The IN5817, IN5818 and IN5819 series
of Schottky barrier rectifiers are ideally
suited for use as rectifiers in low voltage,
high frequency inverters, as free wheeling
diodes and as polarity protection diodes.

ABSOLUTE MAXIMUM RATINGS·
lNS817

lNS818

lNS819

Peak Repetitive Reverse Voltage, VRRM ....................... 20V ................... 30V ................... 40V .
Working Peak Reverse Voltage, VRWM ......................... 20V ................... 30V ................... 40V .
DC Blocking Voltage, VR ..................................... 20V ................... 30V ................... 40V .
Non·Repetiti\e Peak Reverse Voltage, VRSM ................... 24V ................... 36V ................... 48V .
RMS Reversf' 'Joltage, VR'RMS' ................................ 14V ................... 21V ................... 28V .
Average R~c;,"ied Forward Current, 10 ................................................ l.OA ........................ .
(VR'e.u", :S 0.2 VR(DC), TL =90°C,
R9JA =80°C/W, PC Board Mounting,
see Note 1, TA =55°C)
Ambient Temperature, TA.................................... 85°C ................... 80°C .................. 75°C.
Rated VR(DC), PF'AV' =0, R8JA =80°C/W)
Non·Repetitive Peak Surge Current, IFsM ....................................... 25A (for one cycle) ................. .
(Surge applied at rated load conditions, half·wave,
single phase 60Hz, T L = 70°C)
Operating and Storage Junction Temperature Range, .......................... -65°C to +125°C .................. .
(Reverse Voltage Applied)
Peak Operating Junction Temperature, T"okl ............................. " ........... 150°C ....................... .
(Forward Current Applied)
Thermal Resistance, Junction to Ambient (Note 1), R.JA .......................... 80°C/W Max.................... .
• JEDEC registered values.
Note 1: Lead Temperature reference is cathode lead 'f,,' from case.

MECHANICAL SPECIFICATIONS
IN5817 IN5818 IN5819

CATHODE
BAND

INCHES

rK~

'L==K11A La

A
B

D
K

MILLIMETERS

MIN

MAX

MIN

MAX

0.160
0.110
0.030
1.0

0.260
0.120
0.034

4.06
2.79
0.76
25.4

6.60
3.05
0.86

-

ASA

-

Soldering 220°C, %6" from case for ten seconds

4/82

6·33

~UNITRDDE

II

IN5817 IN5818 IN5819

ELECTRICAL CHARACTERISTICS (TL

=2SoC unless

CHARACTERISTIC

SYMBOL

Maximum Instantaneous
Forward Voltage (Note 2)

VF

Maximum Instantaneous
Reverse Current @ Rated
DC Voltage (Note 2)

iR

• JEDEC registered values.
Note 2: Pulse width = 3001's; duty cycle

noted)·
lNS8l7 lNS8l8 lNS8l9 UNITS
0.450

0.550

0.600

V

0.750

0.875

0.900

V

1.0

1.0

1.0

mA

10

10

10

mA

CONDITIONS

=LOA
=3.0A
TL =25·C
TL =100·C
iF

iF

= 2%.

Typical Reverse Current
vs Reverse Voltage

Typical Forward Voltage VI
Forward Current (lNS8l7)

10

.s....
as0:

20

T, = 125°e

<

g

.5

"''"0:

"'~
0:

I
~

==

T, = 125°e

F

0:

r- T, = 75°e

::>

0:

.05

.

.02

12

.2

-'

.1

.1

LL

Cl

T, = 75°e

~
T,-25°e=

u

::>

u

10

....

as0:

T, = 100 0 e

TA

0:

;<

0:

T,=25°e
01

005

= =-

=-55°C

.5

I

.05
.02

002
001
10

20

30

40

50

60

70

80

.01

90 100

o

.1

.2

.3

.4

.5

.6

.7

.8

.9

1.0

v, - FORWARD VOLTAGE (V)

V, - REVERSE VOLTAGE (% of V.WM)

Typical Forward Voltage VI
Forward Current (lNS8l8, lNS8l9)

Output Current vs
Lead Temperature (L = '/a")
1.2

g
....z

20

g
!Z
~

F

a'"
~

.5

I

.2

-'

.1

" "\\.

"'
0:
0:

FT, = 75°e

T" - 25°C

/

ffi

~

T, = 125°e

10

r- .......

1.0

TA - -55°C ~

::>

u

==

.8

8

u:

;::
1;l

==

.6

\

0:

."''"

.."'
0:

1\

.4

>

I

.2

\

.2

.05

\

o

.02
.01

65

o

.1

.2

.3

.4

.5

.6

.7

.8

.9

75

85

95

105

115

125

T, - LEAD TEMPERATURE (Oe)

1.0

V, - FORWARD VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-34

PRINTED IN U.S.A

IN5820
IN5821
IN5822

POWER SCHOTTKY RECTIFIERS
3A, Up to 40V

FEATURES

DESCRIPTION

• Very Low Forward Voltage
(0.475V max @ 3A for the 1N5820)
• Low Stored Charge, Majority Carrier
Conduction
• Economical, Convenient Plastic Package
• Small Size

The 1N5820, 1N5821 and 1N5822 series
of Schottky barrier rectifiers are ideally
suited for use as rectifiers in low voltage,
high frequency inverters, as free wheeling
diodes and as polarity protection diodes.

ABSOLUTE MAXIMUM RATINGS·
IN5820
IN5821
IN5822
Peak Repetitive Reverse Voltage, VRRM ....................... 20V ................... 30V ................... 40V .
Working Peak Reverse Voltage, VRWM ......................... 20V ................... 30V ................... 40V .
DC Blocking Voltage, VR ••••••••••••••••••••••••••• " •••••••• 20V ................... 30V ................... 40V .
Non-Repetitive Peak Reverse Voltage, VRSM ....... _. _..... _... 24V .... _... _... _...... 36V . _. _... _......... _. 48V .
RMS Reverse Voltage, VRIRMS' .. _..... _.. ____ . _. _........ _. _.. 14V ... _..... _. _... _... 21 V .... _. _. _.... _... _. 28V _
Average Rectified Forward Current, 10 ................. _. _.............. _......... _... 3.0A ........ _.. _. _...... _. _. _
(VRlequ"" ::; 0.2 VR(DC), TL =95°C,
ReJA =28°C/W, PC Board Mounting,
see Note 1, T A = 55°C)
Ambient Temperature, TA.... _.. _...... _........ _. _.. _....... 90°C _.................. 85°C ....... _. _.. _...... 80°C.
(Rated VR(DC), PFIAV' =0, ReJA = 28°C/W)
Non-Repetitive Peak Surge Current, IFsM . _____ ..... _.. _......... _. _. _. _....... _80A (for one cycle) ........... _..... .
(Surge applied at rated load conditions, half-wave,
single phase 60Hz, TL =75°C)
Operating and Storage Junction Temperature Range, ........... _. _. _. _. _. _.. _. -65°C to + 125°C. _................ .
(Reverse Voltage Applied)
Peak Operating Junction Temperature, T"P"_' _.................. _........ _... _...... _150°C .. __ ........ _........ _..
(Forward Current Applied)
Thermal Resistance, Junction to Ambient (Note 1), RaJA .......... _. _... _.... _. .. 28°C/W Max .. _. _.... _.... _. _... .
• JEDEC registered values.
Note 1: Lead Temperature reference is cathode lead %2' from case.

MECHANICAL SPECIFICATIONS
IN5820 IN5821 IN5822

A

B

0

K

INCHES
MIN
MAX
0.160
0.260
0.110
0.120
0.030
0.034
1.0

-

ASB

MILLIMETERS
MIN
MAX
4.06
6.60
2.79
3.05
0.86
0.76
25.4
-

Soldering: 220°C. 1f1'" from case for ten seconds

4/82

6-35

~UNITRDDE

•

lN5820 lN5821 lN5822

ELECTRICAL CHARACTERISTICS (Tl = 25°C unless noted)*
SYMBOL

CHARACTERISTIC
Maximum Instantaneous
Forward Voltage (Note 2)

VF

Maximum Instantaneous
Reverse Current @ Rated
DC Voltage (Note 2)

iR

• JEDEC registered values.
Note 2: Pulse width 3001'5; duty cycle

=

IN5820 IN5821 IN5822 UNITS

CONDITIONS
iF = 3.0A

0.475

0.500

0.525

V

0.850

0.900

0.950

V

iF = 9.4A

2.0

2.0

2.0

mA

Tl= 25°C

2.0

2.0

2.0

mA

TL = 100°C

=2%

Typical Reverse Current
vs Reverse Voltage

Typical Forward Voltage
vs Forward Current

10

50

T, -125'C

20
T, - 100'G

~

5

g

TA -75°C

'"

.05
.02

ffi

'"

...

TA

'"'":::>
u
"'"
~

.1

1::;



T, - 25'C

TA = -55°C

e

.2

-"

.1

I

.05

.005

02

002

.01

001

o

10

~

V, -

w ro w ~
REVERSE VOLTAGE (% of v,...)
W

=25°C

I

./

01

===:T, -75'G

>-

>-

'"'"

5

/.'/

IE

.5

IE
:::>
u

===: 1= T, - 125'G

10

V

~

~

o

.1

.2

.5

.9

10

V, - FORWARD VOLTAGE (V)

100

Output Current vs
Case Temperature (L = 'Is")

g

...z

~

....... r-...

30

'"

2.5

a'"
fa

;;:

r\

20

~

\
\

~ 1.5

~

\

~ 10

I

\

.5!

1\

\

o
65

75

85

95

105

115

125

T, - LEAD TEMPERATURE ('G)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
(710) 326-6509 • TELEX 95·1064

T~X

6-36

PRINTED IN U.S.A.

IN6097
IN6098

POWER SCHOTTKY RECTIFIERS
50 Amp, 30 and 40 Volts

DESCRIPTION
Unitrode's series of Schottky barrier power rectifiers is ideally suited for output
rectifiers and catch diodes in low voltage power supplies. The Unitrode high
conductivity design, using a heavy copper top post and 4 point crimp, ensures cool
thermal operation and low dynamic impedance. Rugged design absorbs stress that
can damage glass·to-metal seal during installation and use.

FEATURES
• Very Low Forward Voltage
• Low Recovered Charge
• Rugged Package Design (DO·5)
• Low Thermal Resistance
• High Surge Current
• Reverse Energy Tested (2A pk)
ABSOLUTE MAXIMUM RATINGS
Working Peak Reverse Voltage, VRWM
DC Blocking Voltage, VR .
Repetitive Peak Reverse Voltage, V•• M ..
Non-repetitive Peak Reverse Voltage, V. SM
Average Rectified Forward Current, 10

1 NSOl7

=

Non-repetitive Peak Surge Current (S.3 mS), I FSM
Storage Temperature Range, T'I9
Peak Operating Junction Temperature, Tj(pkl
Thermal Resistance Junction to Case, ReJc .
ELECTRICAL CHARACTERISTICS (TCASE
Characteristic

Maximum Instantaneous
Reverse Current

Maximum Reverse Current
Maximum Instantaneous
Forward Voltage

Capacitance

1NSOl8

.30V .. ..
.40V
.... 30V ... .
...40V
.40V
.. 30V
............... ..
.4SV
.. 36V ........ ..
.................... 50A (Te == WC).
20A (Te 105'C)
SOOA
... -65 to + 125°C.
.+150°C
l'C/WMax........................... .

.

== 25'C)
Symbol

I"

Both Types

Units

Conditions

250

mA

VRWM = Rated,
Te ==125'C
Pulse Width
3001's,
Duty Cycle ~ 2 percent

M

=

I.

250

mA

VFM

0.S6

V

VR

10 = 50A'
Te

VFM

0.60

V

C1

7000

pF

=Rated, Te = 115°C
=70°C

=

IF lOA
Pulse Width 300l's
Duty Cycle ~ 2 percent
V.

== 1.0V

'I'M = 15lA

MECHANICAL SPECIFICATIONS

1N6097, 1N6098

A

225

+

005

060 MIN

156

c!:.

020

00-5

572!" 0 13
152 MIN

396'" 0 51

o

156 MIN FLAT

E

667 DIA MAX

16940lA MAX

375 MAX

1720., 0 25
953 MAX

396 MIN FLAT

229MAX

140 MIN DIA

M
N

356 MIN OIA

1000 MAX

2540 MAX

450 MAX

1143 MAX

438' 015

1113'038

078 MAX

I 98 MAX

Notes:
1.
2.
3.
4.

Cathode Is stud.
Maximum un lubricated stud torque: 30 inch pounds.
Angular orientation of terminal is undefined.
Maximum tension (90') anode terminal 15 pounds for 30 seconds.

4/82

6-37

~UNITRDDE

II

IN6097, IN6098

Typical Forward Current
vs Forward Voltage

Typical Reverse Current
vs Reverse Voltage
1000

-'-~

100

...~

15

'"'"::J
U

::;.-\~~

:( 100

//

10

F

150'

15

f::12 'c
f- 75"C If

C

'"""

/

'"
J.

\2~'c

'"'"

25'C

I

;:

.s...

/

-

V V

::J

~1O.0

/---55'C

......

~

1

.1

');'4 v

~c

./

10

:'\~~

0.1
.2

.3

.4

.5

.6

.9

1.0

/

1",oc

'"ffi

~

......

o

V,-FORWARD VOLTAGE (V)

10

20

fo

30

40

50

V.-REVERSE VOLTAGE (V)

MECHANICAL SPECIFICATIONS
1N6097,1N6098

FLEXIBLE TOP LEAD (OPTIONAL)
Add an "F" Suffix to Part Number.

Standard JEDEC
00·5 Package

@

M

~

Ip

N

-

R

'#8FleXlblel ~-<""""-=::It=l

Cable 7 x 95/36
·ShrlOkable

SIeevlOg
Covers

I-QJ'S

p

Q
S
T

INCHES

MILLIMETERS

71B MAX.
450 t 250
525 MAX.
675 t 035
205. 005
.075 • 010
1125 MAX

IB24 MAX.
1143 t 6.35
13.23 MAX.
1715 t 0.B9
521tOl3
191t025
2B 5B MAX

00-5 with Flexible Lead

lead

"'To 125"C (AmbIent)
Note: Consult Factory tOf Non-standard Lead Lengths

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

6-38

PRINTED IN U.S.A.

IN6304-1N6306
JAN, JANTX, JANTXV

RECTIFIERS
High Efficiency, 70A

FEATURES

DESCRIPTION

•
•
•
•
•
•
•
•

The IN6304 Series is specifically designed
for operation in power switching circuits
operating at frequencies of at least
20KHz. The very low forward voltage and
very fast recovery time make them par·
ticularly suited for switching type power
supplies.

High Continuous Current Rating
Very Low Forward Voltage
Very Fast Switching Speeds
High Surge Capability
Low Thermal Resistance
Mechanically Rugged
Both Polarities Available
Qualified to MIL-S-19500/550

II

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, lN6304 ...... . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . .. 50V
Peak Inverse Voltage, lN6305 ................................................. 100V
Peak Inverse Voltage, lN6306 ................................................. 150V
Maximum Average D.C. Output Current at Tc = 100°C........ . . . . . . . . . . . . . . . . . . .. 70A
Non-Repetitive Sinusodal Surge Current 8.3ms .................................. 800A
Thermal Resistance, Junction to Case ....................................... 0.8°C/W
Operating and Storage Temperature Range .......................... -65°C to +175°C
Operating and Storage Temperature Range (JEDEC types) ........... -55°C to + 175°C

POWER CYCLING

SWITCHING CHARACTERISTICS

These devices possess the unique ability to pass many thousands
of cycles of a stress test designed to evaluate the integrity of the
bonding systems used in the construction of power rectifiers.
In this stress test, the case of the device is not heat sunk. Full rated
forward current is supplied to force a case temperature increase at
least 75°C, at which time, the current is removed and the case
allowed to cool. The cycle is repeated a minimum of 5,000 times to
simulate equipment being turned on and off. Extended powercycling
tests demonstrate a product capability in excess of 25,000 cycles.

The switching times of these ultra-fast rectifiers increase relatively
little, with temperature or at different currents. Even in severe
applications, such as catch diodes for switching regulators and
output rectifiers for high frequency square wave inverters, these
devices switch many times faster than the fastest associated
transistors. Thus, the stresses on and powers dissipated in the
switching transistors are substantially less than when using other
rectifiers.

MECHANICAL SPECIFICATIONS
IN6304·1N6306

225:!; 005
060 MIN

C

156!; 020
156 MIN FLAT

,
G

1/4·28
K
L

1694 DIA MAX

1720!; 0 25

•
N

140 MIN DIA
1000 MAX

450 MAX
438!; 015
078 MAX

o

396 MIN FLAT

667 CIA MAX

090 MAX
677!. 010
375 MAX

UNF - 2A

572!; 0 13
152 MIN
396!; 0 51

DO·203AB
(00-5)

229MAX
953 MAX

356 MIN DIA
2540 MAX
1143 MAX

1113" 038
198MAX

Notes:
1. Standard polarity is cathode-ta-stud.
For reverse poJanty (anode-ta-stud) add suffix "R", ie. IN6304R.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 20 inch pounds (20 kg. em).
4. Angular orientation of terminal is undefined.

4/82

6·39

~UNITRDDE

JAN, JANTX, JANTXV lN6304-1N6306

ELECTRICAL SPECIFICATIONS

Maximum
Forward Voltage
VF

VR

Type

Tc
50V
100V
l50V

IN6304
IN6305
lN6306

= 25°C

Tc

_975V

Maximum
Reverse Cu rrent

Maximum
Reverse
Recovery
Time

IR

= 150°C

Tc

= 25°C

= 150°C

Tc

t"

.840V

@

@

70A
tp =3OOf.lS

70A
tp =3OOf.lS

25f.lA

30mA

25f.lA

30mA

50ns
lA-lA-O.lA

.975V
@

J, JTX, JTXV lN6304
J, JTX, JTXV IN6305
J, JTX, JTXV IN6306

50V
100V
l50V

70A
tp" 3OOf.ls

.840V

1.18V

70A
tp =3OOf.ls

50ns'"

@

@

60ns'2'

l50A
t p = 3OOf.lS
(1)

'21

IF = O.5A, IR = lA, IREe = O.25A, di/" = 85A1/ls (min.).
IFM = 70A, di/.t = l30A//ls.

Type

VA

J, JTX, JTXV lN6304
J, JTX, JTXV lN6305
J, JTX, JTXV lN6306

50V
100V
150V

Maximum
Forward Recovery
Time
l5ns

IFM

= lA, t, =8ns

IFM

70

~

>zOJ
0:
0:

50

::>
tJ

...........

I~

>-

::>
"- 30
>::>

iE
~

I~

10
100
Tc -

@ -lOV

600pF

180 f----+-~~=+-~-+_------l

::>
u
I-

::>

Q.

I-

~

I
_0

2.2V

= lA, t, =8ns

IF IfUty Cycle

g
I-

0

Maximum
Junction
Capacitance

Peak Output Current vs_
Case Temperature

Output Current vs_
Case Temperature
_

Maximum
Forward
Voltage

::>

o

'"~
Q.

I

'\

1

125
150
175
CASE TEMPERATURE (OC)

_
60f-~--~~-~~~~~~~-i

20

10, Average of Rectifled.L....f-----''"-d-''~~tt_l
Half Sine

~OLO--~12~0--~14~0--~1~60-~~
T, - CASE TEMPERATURE (0C)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-40

PRINTED IN U.S.A.

JAN, JANTX, JANTXV IN6304-1N6306

Forward Current
Forward Voltage

Typical Reverse Current
vs. Reverse Voltage

VS.

.001
.002

~

100

f---;r---+----r---~.f~.f_4--__i

50

r---~---+----r-f_I_~~--_1--__1
g

'"
3
o

20

f--+--f---f<

z

~
Ii"

10

f--+--I--I

:l

TJ

.02 I-- I--

C

'"

i--r-

.01

is

'"

1
I-- V

.005

= 25'C

.05
.1

I-

.2

"'a:a:

)

.5
1

u

I

2

-~

l-

+- f-

TJ

t-

p-

TJ

= (100'C
= +l;1·c

V
)

II

10

H j.-<
IA

20
IL-__
o
0.2

L-L-~

0.4

__L-~~~__~__~
1.4

50

V, - FORWARD VOLTAGE (V)

III

F:t7+15h'c

I

I I

130 120 lIO 100 90 80 70 60 50 40 30 20 10 0
VOLTAGE IN % OF PIV

Maximum Forward Surge
vs. Number of eyc les
800

~
I-

600

Z

~

E

I""

I

"-

"'a:a:

:l

u

400

200

f\J'L

u

"'

.5

.:!"'

.2

z
«
c

r-------

i'--,

..J

~

I

J

Thermal Impedance
vs. Pulse Width

~

~lCYCIE

«

r-:fV"'"
./

VV

.1

VV

:E

a: .05

r-- r---

"'J:

V

l-

I

.02

~ .01
N

.01.02 .05.1.2
tp -

N-

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

.5 1 2 5 10 20 50 100 200
PULSE WIDTH (mS)

1000

200

Reverse-Recovery Circuit

Characteristic Waveform

-

-

too

D. U. T.

\

IREC

I
I

In
N.I.
(coaxial)

1\

I
I.

.I
SET TIME BASE
FOR 5 NS/CM

NOTES:
1. Oscilloscope: RIse time :$ 3ns; input impedance = 500.
2. Pulse Generator: Rise time S 8ns; source impedance = 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

6-41

PRINTED IN U.S.A.

POWER SC'HOTTKY RECTIFIERS
50A Pk, 45V

IN6391
JAN, JANTX, JANTXV

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

The IN6391 has a Schottky barrier
junction and is ideally suited for output
rectifiers' and catch diodes in low voltage
power supplies. Rugged design absorbs
stress that can damage glass-to-metal seal
during installation and use.

Very Low Forward Voltage
Low Recovered Charge
Rugged Package Design (DO-4)
High Efficiency for Low Voltage Supplies
45V Blocking @ Rated T,m ..
54V Repetitive Surge Voltage
Qualified to MIL-S-19500/553

ABSOLUTE MAXIMUM RATINGS
Working Peak Reverse Voltage, VRWM __ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
DC Blocking Voltage, VR .. _..................................................... 45V
Peak Repetitive Surge Voltage, VR8M @ IRM ........................ _.............. 54V
Average Rectified Forward Current, 10 @ Tc = 125°C ... _....... _.......... _.. _.... 25A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz, 50% Duty Cycle),
IFRM @ Tc = 125°C ........ _................. _.......................... _.... 50A
Non-Repetitive Peak Surge Current (8.3ms), IF8M . _............. _. _.............. 600A
Peak Reverse Transient Current, IRM .............................................. 2A
Operating and Storage Temperature Range ............ _..... _...... -55°C to +175°C
Thermal Resistance, Junction to Case, RSJC ................................. 2.0°C/W

MECHANICAL SPECIFICATIONS
JAN, JANTX, JANTXV IN6391

A
B
C
D
E
F
G
H

INCHES
.078 MAX.
.437' .015
.405 MAX.
.800 MAX.
.430' .010
.250 MAX.
.424 MAX.
.066 MIN. DIA.

00-4

MILLIMETERS
1.98 MAX.
11.10' 0.38
10.29 MAX.
20.32 MAX.
10.92' 0.25
6.35 MAX.
10.77 MAX.
1.68 MIN. DIA.

NOTES:
1. Cathode is stud.
2. All metal surfaces tin plated.

3. Maximum unlubricated stud torque: 10 inch pounds.
4. Angular orientation of terminal is undefined.

[1JJ
4/83

6-42

_UNITRODE

JAN, JANTX, JANTXV 1N6391
ELECTRICAL CHARACTERISTICS (TeAsE = 25°C)
Symbol

limit

Units

Maximum Instantaneous
Reverse Current

iR

15
40
40

mA
mA
mA

Te = 25°C, VR = VRWM
Te= 125°C
Te = 175°C
Pulse Width = 4OOl1s
Duty Cycle = 1%

Maximum Instantaneous
Forward Voltage

VF

0.44
0.68

V
V

iF = 5A, Te = 25°C
iF = 50A, Te = 25°C
Pulse Width = 3OOl1s
Duty Cycle = 1%

Capacitance

C,

2000

pF

VR = 5.0V

Characteristic

Conditions

II

Typical Reverse Current
vs Reverse Voltage

Typical Forward Current
vs Forward Voltage
1000

V- ~~

§:

....
~

'"'"::::>
'-'

10

100

~

:(

.5.
....z

...
'"'"::::>

V
III VI
II I

I

I II

0.1

L·L

\.19: """""" """"""¥~
~G

100

o

/

()

I
.!!

I

Vrl II
02

10

0.1

04

v, -

06

0.8

.01

1.0

0

20

VOLTAGE (V)

40

60

80

100

120

%OFV.

V.eMAI) Rating vs Case Temperature
50
45

\

40
35

?:

30

~

25

>

20

•

\
\
\

15

1

10

-50

\

-25

25

50

75

100 125

150

175

CASE TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-43

PRINTED IN

u.s A.

POWER SCHOTTKY RECTIFIERS

IN6392
JAN, JANTX, JANTXV

120A Pk

FEATURES

DESCRIPTION

•
•
•
•
•
•
•
•

The lN6392 Schottky barrier power rectifier is ideally suited for output rectifiers
and catch diodes in low voltage power
supplies. The Unitrode high conductivity
design, using a heavy copper top post and
4 point crimp, ensures cool thermal
operation and low dynamic impedance.
Rugged design absorbs stress that can
damage glass-to-metal seal during
installation and use.

Very Low Forward Voltage (0.6 at 60A, 125°C)
Low Recovered Charge
Rugged Package Design (DO-5)
High Efficiency for Low Voltage Supplies
Low Thermal Resistance (l.O°C/W)
High Surge Current (800A)
Low Reverse Current (60mA at rated VRat 125°C)
Qualified to MIL-S-19500/554

ABSOLUTE MAXIMUM RATINGS
Working Peak.Reverse Voltage, VRWM ............................................. 45V
DC Blocking Voltage, VR ..... _............................... _.................. 45V
Peak Repetitive Surge Voltage, VR8M @ IRM ............................ _....... _.. 54V
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz, 50% Duty Cycle), IFRM ....... 120A (at Te = 115°C)
Average Rectified Forward Current, IFIAVI ... _..................... 60A (at Te = 115°C)
Non-Repetitive Peak Surge Current (8.3ms), IF8M ...................... _......... 800A
Peak Reverse Transient Current, IRM ..................... _....... _................ 2A
Operating and Storage Temperature Range ......................... -55°C to + 175°C
Thermal Resistance, Junction to Case, R8Je ........ _.................. _..... 1.0°C/W

MECHANICAL SPECIFICATIONS
JAN, JANTX, JANTXV IN6392

A
B

e
0
E
F

G
H

J
K
L
M
N

INCHES
.225 ± .005
.060 MIN.
.156 ± .020
.156 MIN. FLAT
.667 OIA. MAX.
.090 MAX.
.677' .010
.375 MAX.
.140 MIN. OIA.
1.000 MAX.
.450 MAX.
.438' .015
.078 MAX.

00-5

MILLIMETERS
5.72 ± 0.13
1.52 MIN .
3.96' 0.51
3.96 MIN. FLAT
16.94 OIA. MAX .
2.29 MAX.
17.20' 0.25
9.53 MAX .
3.56 MIN DIA .
25.40 MAX.
11.43 MAX .
11.13' 0.38
1.98 MAX .

NOTES:
1. Cathode is stud.
2. All metal surfaces tin plated.

4/83

3. Maximum unlubricated stud torque: 30 inch pounds (35 kg. em).
4. Angular orientation of terminal is undefined.

6-44

~UNITRDDE

JAN, JANTX, JANTXV IN6392

=25°C)

ELECTRICAL CHARACTERISTICS (T CASE
Characteristic

Symbol

limit

Units

iR

20
60
600

mA
mA
mA

0.47
0.68
0.82

V
V
V

iF lOA, Tc 25°C
iF = 60A, Tc = 25°C
iF = 120A, Tc 125°C
Pulse Width = 300j.fs
Duty Cycle = 1%

3000

pF

VR = 5.0V

Maximum Instantaneous
Reverse Current

Maximum Instantaneous
Forward Voltage

VF

Maximum Capacitance

C,

Conditions

=
=
=

VR VRWM
Tc 125°C
Tc 175°C
Pulse Width 400j.fs
Duty Cycle = 1%

=

=

=

=

Typical Forward Current
vs Forward Voltage

II

Typical Reverse Current
vs Reverse Voltage
1000

A ~ ;:;.....-

100

-

175°C

€

....
iE

'"'"
:::l

I--t-

4' 100

F

"

'"'"
3100

25°C

1-75 °C

/

-

....

150°

F12,oC

0

'"

<
;:

150°C

oS
iE

// V/ /

10

;':"-55°C

125°C

w

I

'\

~g5
_u.

30



Z

"''"
::>
'"u
::l
ffi
~

'".1

20
10

/
~

*
,');

I

I

1/ ~~ j
~

V-

I'

V II

~
V ~ ~~/
Jri
V
V 1IV1

o

0.1 .2.3.4 .5 .6 .7.8.91.01.11.21.31.4

0-~

l/~

I-

......

~c,

...... 10'

5 10 15 20 25 30 35 40 45
V.-REVERSE VOLTAGE (V)

V,- FORWARD VOLTAGE (V)
VRRM Rating vs
Case Temperature

45

..........

40

r---..

..........

r---..

~ 30

J
20

10

o
- 50

75

25

125

150

TEMPERATURE ('CI
UNITRODE CORPORATION. 5 FORBES ROALJ
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-49

PRINTED IN USA

•

SES5001-SES5003

RECTIFIERS
High Efficiency, 2A

FEATURES
• Fast Recovery Times
• Low Forward Voltage
• Small Size
• Convenient Package

DESCRIPTION
An axial leaded power rectifier useful
in many switching applications.
Particularly suited where very fast
recovery and low forward voltage are
required.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, SES5001 ...................................................................................50V
Peak Inverse Voltage, SES5002 .................................................................................. 100V
Peak Inverse Voltage, SES5003 .................................................................................. 150V
Maximum Average D.C. Output Current atT L = 75·C, L=3/8" .......................................................... 2A
Non·Repetitive Surge Current at S.3mS ............................................................................ 35A
Thermal Resistance, @ L=3/S" ...............................................................................3S·CIW
Operating and Storage Temperature Range .............................................................. - 55·C + 175·C

ELECTRICAL SPECIFICATIONS
Type

PIV

SES5001
SES5002
SES5003

50V
100V
150V

'Measured in circulI IF

Maximum
Forward Voltage (VF)
@
TJ =25·C
TJ =100·C
.975V
@
1A

.S95V
@
1A

Maximum
Reverse Current (I R)
@PIV
@ TJ =25·C @ TJ =100·C
2"A

50"A

Maximum
Reverse
Recovery
Time'
100nS

= .5A, IR = 1.0A, IREC = .25A

MECHANICAL SPECIFICATIONS
SES5001-SES5003

7

1

,

is047-:,1::'-,

'.0'28 ± .001
.071mm :r .03

1180

BODY Al

t

085 max

'-_ _ _ _-' _ _ _ _ _ _-'1_16mm

max
I
I-432mm
.-

.170

6·50

~UNITR.DDE

SES5001-SES5003

Output Current
vs. Lead Temperature

:!

...

4

UJ

0:
0:
:::l

'-.......

:::l

:;;

~

:;;

//: VV

d~ 1,-

2

~

LI_'liI"

I

~

25

50

.5

z

~ .1
j---

I

_"" .02

"'" '"'"

100

$ ~/ISJ

0:

E .05

............ ........

7S

/1/1/
VIII
II." ~ II

5
.... 2

"~

l=~"

1/

.01

10....

u

....'

50

I

175

100

UJ

a::

0:
:::l

500

r--

o

UJ

~

:::l

..

100
50

---

.1.us

.5

f'.-

80

i'-..

~ 60

UJ

" 40
0:

vV

+125'C

100

80

60

40

20

VOLTAGE IN % OF PIV

.'"

'""-

:::l

--- ----

10

V

Multiple Surge Current
vs. Duration
100

";::

t"--

T

(V)

Z

l-

f-f-

-+-±it.":J

If
120

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.01.11.21.3

DUra~j~~ar;r ~U~~~R~~:~~i~~SpUlse

~

!;; 1.000

1

__.J.';

T = +7S'C

10

Forward Pulse Current
vs. Duration
5,000

1

-"

/I

V~-VOLTAGE

10,000

i-TJ =2S'C

.5

:::l

0

I

.001

150

0:
0:

'""""

1--""1-"

zUJ

1/

.002

M

,;
~ .05
;: .1

f{

...' ti ~~
H
I

.005

"'-....... ,,\

125

.01

/1/ / /

l~-

"'" """

~,d

k

L=Ifa"

U

:;;

.001

1,-

............

z

Typical Reverse Current
vs. Voltage

10

1
L

Typical Forward Current
vs. Forward Voltage

5
50
10,u.5
1oo,u5
PULSE DURATION

1ms

5

.......

~

..,.0

TL MOUNT
@ length = 3/a"

I--- ~-L_

20

printed cirCu1it I

lOms

2

10 20

50

100 200

500

1000

CYCLES AT 60 Hz SINE WAVE

Reverse-Recovery Circuit

son

10

n

+
_

-=-

25Vdc

(APPROX.)
1 {1
NOTE 3

OSCILLOSCOPE
NOTE I

NOTES:
1. Oscilloscope: Rise time<3nS; Input Impedance=50Q,
2. Pulse Generator: Rise tlme<8nS; source Impedance 102.
3. Current viewing resistor, non·inductlve, coaxial recommended.

UNITROOE CORPORATION, 5 FORBES ROAD
LEXINGTON, MA 02173 ' TEL. (617) 861·6540
TWX (710) 326·6509 ' TELEX 95·1064

6-51

PRINTED IN U.SA.

II

SES5301-SES5303

RECTIFIERS
High Efficiency, 5A

FEATURES
• Low Forward Voltage
• Fast Recovery Times
• Small Size
• High Surge

DESCRIPTION
An axial leaded power rectifier useful
in many switching applications.
Partlcu larly suited where very fast
recovery and low forward voltage are
required.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, SES5301 ...................................................................................50V
Peak Inverse Voltage, SES5302 .................................................................................. 100V
Peak Inverse Voltage, SES5303 .................................................................................. 150V
Maximum Average D.C. Output Current at T l = 75 'C, L = 3/8" . ......................................................... 5A
Non·Repetitive Sinusoidal Surge Current at 8.3mS .................................................................. 11 OA
Thermal Resistance at L = 3/8" ............................................................................... 20 'C/W
Operating and Storage Temperature Range ............................................................ - 55 'C to + 170 'C

ELECTRICAL SPECIFICATIONS

Type

PIV

SES5301
SES5302
SES5303

50V
100V
150V

• Measured in circuit IF

Maximum
Reverse Current (I R)
@PIV

Maximum
Forward Voltage (VF)
@
TJ =25·C

TJ =100·C

0.975V
@
5A

0.895V
@

@TJ =25·C

@TJ =100·C

5,.,A

150,.,A

Maximum
Reverse
Recovery
Time·

100n5

5A

=O.5A, IR =1.0A, 'REC =O.25A

MECHANICAL SPECIFICATIONS
SES5301-SES5303

~1.0min

I--T 25.4mm
1

!d

.040'.001
l.02mm ± .03

1/80

BODY Bl

.'145 max
l68mm
' -_ _ _---' _ _ _ _ _.l...

1_.200

max_I

5.0Bmm

6-52

~UNITRODE

SES5301-SES5303

Typical Forward Current
VS. Forward Voltage

Output Current
vs. Lead Temperature
10

Ifa",,\

L

$

...z
UJ

'"::>'"

"I

""
L=

.........

!

20

ra"~

r--...

'"

10

$

50
TL -

5,000

$

!z 1,000
~

::>
'"
"'"~
::>
Q.

500

I

\

I~ \..

-!?

"'" ~~

125

-%.0f/-

150

75
LEAD TEMPERATURE (DC)

~~ r'T~
,-'
,...,..,

02

II II 1

01

175

I

10
I
-" 20

I-

L

'"

e.-C--

= +75'C
,J I I 1

T

I-

100
200

rr

T = +100'C

~

T

1000

r-fl
, I:

,-'

120

.1 .2 .3 .4 .5 .6 .7 :8 .9 1.01.11.21.3

( I I I L

= +125'C

II

II I

100
80
60
40
20
'VOLTAGE IN % OF pry

Vr-VOLTAGE IV)

VS.

Duration

I

r-- r--.

1/

1-1-

= +25°C
I

::>
u

I

U

TJ

0:
0:

II

05

e.-

....'!z
"'

/ /

-"" ,2

~_SOoC

.2

:<:

I

I

V1'
TJ

.1

1// I I

a .5

1\

100

--

2

"'

~

Forward Pulse Current

10,000

...

z

\

""

/Y:: %;

1,-

T,

1\

L='I~~

25

50

r~r r-

'\

.01
,02

100

I

I

I\.

Typical Reverse Current
vs. Voltage

I

Multiple Surge Current VS. Duration
100

I

Dura~~~a:;r~U~~~R~,:::~ri~~SpUlse

I"

co8()

z

~

""'- ~

;::

r-.

r--

100

" 60
'"C>
::>
'"",40
0:

r-- r-- -.....

.....

...o

50

#20

10

50

10,,5

100"S

1mS

5

10mS

~

T, MOUNT

@length=",,"

lNl=:::
I
pnnrea Crrcult

I

5
10 20
50
100 200
CYCLES AT 60 Hz SINE WAVE

2

PULSE DURATION

500 '000

Reverse-Recovery Circuit
10 \I

SOil

+
_

-=-

25 Vdc
(APPROX.)
11l

NOTE3

OSC I LLOSCOPE
NOTEl

=

NOTES:
1. Oscilloscope: Rise time ~ 3nS j input impedance
2. Pulse Generator: Rise time ~ 8nS i source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

= son.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

6-53

PRINTED IN USA.

..

SES5401-SES5404

RECTIFIERS
High Efficiency, 8A

DESCRIPTION
The SES5401 Series, in the economical,
convenient TO-220 package, Is specifically
designed for operation in power switching
circuits to frequencies in excess of
100kHz. The very low forward voltage and
very fast recovery time make them
particularly suited for switching type
ABSOLUTE MAXIMUM RATINGS
power supplies.
Peak Inverse Voltage, SES5401 .............................................................' ...................... 50V
Peak Inverse Voltage, SES5402 .................................................................................. 100V
Peak Inverse Voltage, SES5403 .................................................................................. 150V
Peak Inverse Voltage, SES5404 ................................................................................. 200V
Maximum Average D.C. Output Current
@Tc = 125·C .............................................................. 8.0A
@TA = 25·C ...............................................................3.0A
@TA =25·C(Note1) ........................................................ 8.0A
Non-Repetitive Sinusoidal Surge Current, 8.3mS .................................................................... 70A
Thermal Resistance, Junction to Case,0J .c ..................................................................... 2.5 ·CIW
Thermal Resistance, J unction to Ambient, 0 J .A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 ·CIW
Operating and Storage Temperature Range ............................................................ - 55·C to + 150·C

FEATURES
• Low Forward Voltage
• Fast .Recovery Times
• Economical, Convenient TO-220 Package
• Low Thermal Resistance
• Mechanically Rugged
• PIV up to 200V

NOTE 1.

Using Wakefield Type 295 heatslnk with convection cooling. For more
definitive data refer to the Output Current vs. Temperature Curves on this datasheet.
ELECTRICAL SPECIFICATIONS

Type

PIV

SES5401
SES5402
SES5403
SES5404

50V
100V
150V
200V

Maximum
Forward Voltage (V.)
@

Maximum
Reverse Current (IR)
@PIV

T;=25°C

TJ = 100°C

@TJ=25°C

@TJ= 100°C

1.025V@SA

0.945V @SA

5t1A

150tlA
150tlA
150tlA
500tlA

Maximum
Reverse
Recovery
Time'

Typical
Forward
Recovery
Voltage
@lA
t, = 8ns

lOOns

1.4V

"Measured in circuit IF = 0.50A, IR = 1.0A, IREC = 0.25A
MECHANICAL SPECIFICATIONS
SES5401-SES5404

SEATING
PLANE

r
I

A
A

B

j

C
D

r-lL1
I

--I

.7IDII~
~
S;CTAA

A

A

H

I

1

J ~G
o
I

J

F
G
H
J
K

I~ I r- L PIN 1. Cathode
2. Anode
Tab is connected
to Cathode.
N

11182

TO-220AC

B -:

to-

L
N

R
S
T

MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
0560 0625 1423 1587
0380 0420 966 10 66
, 82
0140 0190 356
0020 0045 0.51
0139 0147 3531 3733
279
0090 0110 229
0.250
635
0015 0025 038
064
0500 0562 12.70 14.27
0045 0070 114
l.n
0190 0.210 4.83
533
0.100 0120 254
304
0.080 o l15 204
292
0045 0.055 114
139
0230 0270 585
685

"'

6-54

~UNITRDDE

SES5401-SES5404
Typical Forward Current
vs. Forward Voltage

Output Current
Temperature

VS.

12

100

.0 I

50

.02

20

10

~

,

~

Z

I-

"'

Z

0:
0:

u

"'0:0:

I

u

:>

:>

I

-~

-~

.5

1-;-

.1

III

.05

O~~~-L

a

25

__~__~__~~

50
100
125
TEMPERATURE ('C)

.01

150

~."

III I
.1 .2 .3 .4

'I-

.., 1/

i50:

II

I I

5,000
1,000

g

r-.......

500

I-

Z

"'0:

~
u

100
50

"'

(f)

...J

~

u

10

_"" 20

If

',-,

100

I I

";:z
'"

80

0:

'""-

60

"en
0:

--

:>
0
;f.

40

2.5

i3
UJ
0..

1.0

...J

.5

~~

::;;
::;;
5'"

( I I I I
100

80

60

40

20

f'....

VS.

Ouration

-

2

--

10 20
50 100 200
CYCLES AT 60 Hz SINE WAVE

~

500 1000

Reverse-Recovery Circuit

Ion

+
25Vdc
:=::: (APPROX.)

-I-

10
NOTE 3

OSCILLOSCOPE
NOTE 1

V. . .

J:

rile

II I I

.","

.25

.1

"'r--..... "

son

i-"

l-

I
to

1
120

lOms

Thermal Impedance
vs. Pulse Width

"'

1000

i'

20

1
1ms

l-

T =+125'C

"-

50

.1ps

~

I

Multiple Surge Current

UJ

r-..

~Jlrlc
T =+100'C

VOLTAGE IN % OF PIV

100

I

-- ------

-

200

.5 .6 .7 .8 .9 1.0 1.11.21.3

Peak Half Sine Current ~s. I
Duration for Non·Repetitive Pulse

.5

,/

10

V,-VOLTAGE(V)

:>
0..

2

0:

::>

Forward Pulse Current vs. Ouration
10,000

4±s.c
J ..

I-

....

II'l-ilJt
['I
I

.2

.02

~

/

" '/

rI I

I
.2

.IV,

8

IA I I
T J =-50°C

":::~

"""~

~

10

I-

Typical Reverse Current
VS. Voltage

l/~

.05
.01.02 .05.1 .2

NOTES:

.5 1 2

5 10 20 50100 200

1. Oscilloscope: Rise time::;; 3n5; input impedance = 500.
2. Pulse Generator: Rise time::;; 8ns; source impedance lOn .
3. Current viewing resistor, non-inductive. coaxial recommended.

1000

t, - PULSE WIDTH (ms)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (7l01 326-6509 • TELEX 95·1064

6-55

PRINTED IN U.S.A.

..

SES5501
SES5502
SES5503
SES5504

RECTIFIERS
High Efficiency, 16A

FEATURES

DESCRIPTION

•
•
•
•
•

The SES5500 Series, in the economical,
convenient TO-220 package, is specifically
designed for operation in power switching
circuits to frequencies in excess of
100kHz. The very low forward voltage and
very fast recovery time make them
particularly suited for switching type
power supplies.

Very Low Forward Voltage
Very Fast Recovery Times
Economical, Convenient TO-220 Package
Low Thermal Resistance
Mechanically Rugged

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, SES5501 .................................................. 50V
Peak Inverse Voltage, SES5502 ... : .................................... _........ 100V
Peak Inverse Voltage, SES5503 . _............................................... 150V
Peak Inverse Voltage, SES5504 ................................................. 200V
Maximum Average D.C. Output Current
@Tc=95°C ............................ 16A
@T.= 25°C ........................... 3.3A
@ T. = 25°C (Note 1) .................. 9.0A
Non-Repetitive Sinusoidal Surge Current, 8.3ms .................. _.............. 250A
Thermal Resistance, Junction to Case, 8J -c .................................. 1.5°C/W
Thermal Resistance, Junction to Ambient, 8J-. . .............................. 60°C/W
Operating and Storage Temperature ................................ -55°C to +150°C
Note: 1. Using Wakefield Type 295 heatsink with conveclion cooling. For more definitive data refer
to the Output Current vs Temperature Curve on this data sheet.

MECHANICAL SPECIFICATIONS

PLAN:

b-IRJ

~--l
-

~~

SECT A-A

N

0139
G

~

r

J~:~LG PIN

j

D

H

I*-

I. Cathode
PIN 2 Anode
Tab IS connected
to Cathode.

TO-220AC

MILLIM£TERS
MIN
MAX
1587
lD 66
482
0190
0045
114
0147 3531 3733
279
0110
229
0250
635
0025 038
064
0562 1270 1427
0070
ll4
177
, 83
0210
533
0120
254
304
0115
292
2 O'
0055
13'
0270 585
685

INCHES
MIN

0560
0380
0140
0020

--1

1,._:...,2

Dr
,g

3/83

SES5501-SES5504

rBlJ

'~\p,t
~iJ

K
L
N
R

0090

0015
0500
0045
0190
0100
OOSO
0045
0230

6-56

MAX

0625
0420

1423
966
356
051

"'

~UNITRDDE

SES5501

SES5502

SES5503

SES5504

ELECTRICAL SPECIFICATIONS
Maximum
Forward Voltage
Type

Maximum
Reverse Current

Maximum
Reverse

@PIV

Recovery

PIV

=25'C

TJ

SES5501
SES5502
SES5503
SES5504

50V
lOOV
l50V
200V

TJ

1.025V @ l6A

= lOQ'C

TJ

.945V@ 16A

=25'C

TJ

lOJ1A

Typical
Forward
Recovery
Voltage
@lA
tr 8ns

Time*

= lOQ'C

=

lOOns

800J1A

2.0V

Typical Forward Current vs
Forward Voltage

Output Current vs Temperature

•

50
16
14

20

I-

~
zOJ

10

::J

'"'"

8

U

+150°C
+125'C

~
IzOJ

12

+ lOooe

10

+25°C

-50°C

'"'"::JU

I
-"

I
-"

0.5 ' -_ _ _-LLJ...JL-l-L_--'-_ _-"-_--.l'----.J
0.4
0.6
08
1.0
12

o

v, -

TEMPERATURE (0C)

Forward Pulse Current vs Duration

Typical Reverse Current vs Voltage
5000

....-

1000

<

-3
I-

zOJ

'"'"::J

u

l~
l'/.~oC"""

/f

~JoC

1/
200 ./"

500

100
50

10.000

J,(

2000

5.000

~

~

~~se

r--,

1.000

~,

IZ

/'

~

500

r--

::J

OJ

'"

Square Pulse
Current vs Duration
for Non-Repetitive

i'....

J

U

V>

'"~

VOLTAGE (V)

OJ

"1

10

- -

5

-"
1
05
02
0.1

'1.7 -

it

/'"
20

40

60

80

~"

50

r-

!'

100

100

10

120

. Ips

.5

50
100",

1ms

lOms

% OF PIV
PULSE DURATION

UNITRODE CORPORATION ° 5 FORBES ROAD
LEXINGTON, MA 02173 ° TEL. (617) 861-6540
TWX (710) 326-6509 ° TELEX 95-1064

6-57

PRINTED IN U S.A

SES5501 SES5502 SES5503 SES5504
Thermal Impedance vs Pulse Width

Multiple Surge Current vs Duration
100

80

"z~

'"'"
'"::>"

u

I

t-

'/-

.2

II

.1

III

.05
.02
.01

rL IL

is',o

;:

UJ

a:
a:

I--'

::>

1

10
_" 20 I-

0

Kllffi

tl"f.
,II

f;=f-+-I2S'C

1 ~

II.

~
~
z

=-'so-c

.1

~y

10

10

011

.02

50

lT J _+7S'C

I

I
11

',-,

200

'7

1000

~

100

I1I1

120

.1 .2 .3 .4 .5 .6 .7 .8 .91.01.11.21.3

II ..l

I-

ij'-ri'~
TJ

+125'C

-

i I I I I

100

80

60

40

20

VOLTAGE IN % OF PIV

V,-VOLTAGE(V)

Forward Pulse Current VS. Duration
10.000

1 1

5.000
1.000

~

Multiple Surge Current VS. Duration
100

f f

1

Peak Half SmeCurrent vs.
Duration for Non-Repetitive Pulse

r--.

:::---"

500

'"z
'"
"''"
::>
'"

r--. -.....

50

.5

Ims

"'~

20

1 2

lOps
lOOps
PULSE DURATION

i'...

0

50
Ips

.1#5

40

"

LL

if.
10

60

II:

I--.

100

~

~

II:

l'"""'"- t'-

I"

80

lOms

10 20

-

--

50 100 200

r-

500 100

CYCLES AT 60 Hz SINE WAVE

Thermal Impedance
VS. Pulse Width

Reverse,Recovery Circuit
100

500

2.0

~~,...

1.0
.4

~I'

.2

4.L

g .02

,

1-"1-"

+
::::::

25Vdc
(APPROX.)

Hl

~

1
.0

IL

I-"'"

NOTE 3

OSCILLOSCOPE
NOTE 1

~

.01.02 .05.1.2

.5 1 2

5 10 20 50100 200

NOTES:
1. OSCilloscope: Rise time:;:; 3n5; input impedance = 50(1.
2. Pulse Generator: Rise time :s; 8ns; source impedance IOn.

1000

3. Current viewing resistor, non-inductive, coaxial recommended.

t., - PULSE WIDTH (ms)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6-60

PRINTED IN USA

RECTIFIERS

SES5601C
SES5602C
SES5603C

High Efficiency, 25A Center-Tap
FEATURES
• Low Forward Voltage
• Fast Switching Speed
• Convenient Package
• High Surge Capability
• Low Thermal Resistance
• Mechanically Rugged TO-3 Package
• Available as Positive or Negative Center-Tap

DESCRIPTION
The SES, super-fast recovery, rectifiers are
specifically designed for operation in
power switching circuits_ Their super-fast
recovery time and very low forward
voltage make them particularly
efficient in most switching applications_

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, SES5601C _............................... __ ................................................ 50V
Peak Inverse Voltage, SES5602C ......................................... _........................ _............. _100V
Peak Inverse Voltage, SES5603C ...... _.................................. _....................................... 150V
Maximum Average D.C. Output Current at Tc = 100°C .............. _............................................. _.. _25A
Non-Repetitive Sinusoidal Surge Current 8_3 mS .................. _................................................ 400A
Thermal Resistance, Junction to Case .................. _........................................................ 1 "C/W
Operating and Storage Temperature Range ............................................................ - 55"C to + 175"C

ELECTRICAL SPECIFICATIONS PER DIODE

Type

PIV

SES5601C
SES5602C
SES5603C

50V
100V
150V

Maximum
Forward Voltage (VF )
@

Maximum
Reverse Current (lR)
@PIV

Tc=2SoC

Tc=12SoC

@Tc =2S oC

@Tc =12S oC

0.990V
@
12.5A
to=300f'$

0.830V
@
12.5A
to = 3OOf'$

20,.,A

4mA

Maximum
Reverse
Recovery
Time"

100nS

"Measured in circuit IF = O.5A, IR=1.0A, IREC=O.25A

MECHANICAL SPECIFICATIONS
SES5601C-SESS603C

POSITIVE OUTPUT

•

.1

I

14

•

CASE

~i1'
C

0

ins.

F~M

:~.r~
I"

G · ....... -

Ij

j

J

~

f.-----.
K

A

.875 MAX.

B

.135 MAX.

3.43 MAX.

c

.250-.450

6.35-11.43

0

.312 MIN.

E

.038-.043 OIA.

22.23 MAX.

7.92 MIN.

0.97-1.09 OIA.

F

.188 MAX. RAD.

G

1.177-1.197

29.00-30.40

H

.655-.675

16.84-17.15

J

.205-.225

5.21-5.72

K

.420-.440

10.67-11.18

H

L

TO-204AA (T0-3)

mm

4.78 MAX. RAD.

L

.525 MAX. RAD. 13.34 MAX. RAD.

M

.151-.161DIA

3.84-4.09 DIA.

NOTES:
1. Standard polarity Is positive output.
For reverse polarity (negative output) add suffix "Rol, Ie, SES5601CR.
2. All metal surfaces tin plated.

1/80

6-61

~UNITRDDE

II

SES5601C-SES5603C
Typical Forward Current
VS. Forward Voltage

Typical Reverse Current
vs. Reverse Voltage
.001
.002

I I

..-H-r

.005

5
!zOJ

.02

I-

z

'"'"

en

'"~
'"

OJ

..!'

.5
I
2

--

- -r F=Tt +loo'C
I--- TJ = +125'C

10
20
SO

20

/

10

'"::>'"

.05
.1
::> .2
OJ

CJ
OJ

TJ

30

TJ _+25'C

C .01

g

SO

V

I

~ :::;.:-=

V

0

'"~

I-

I

II /
/ II

...'"
0

1--'/

-~

.5

V

+150'C

,I

.2

II

/

I'

!- -T =+75'C

/
,

I

.4

I

,\.

J

/

CJ

~V

= +150'C

V, -

.6
.8
1.0
FORWARD VOLTAGE (V)

1.2

130 120 lIO 100 90 80 70 60 SO 40 30 20 10
V, - REVERSE VOLTAGE (% OF PIV)

Maximum Forward Surge
vs. Number of Cycles
400

~

"" '"

5300
IZ

OJ

'"
'"i:l2oo
I

-~
100

~
_

1.0

t
"'u
z

.5

C3
a.
"'

.2

..

~

''-.....

f\A

~ICYC~E

.05

"'
l:
l-

-

10
20
SO
100
CYCLES OF 60 Hz SINEWAVE

V

/

V

.02

I

~

.01
.01.02 .05.1 .2

I\<

t, N-

_f-

'/

,I

..J

~

-,-/V

:;;!

~

Thermal Impedance
vs. Pulse Width

.5 I 2 5 10 20 50 100200
PULSE WIDTH (mS)

1000

200

Reverse-Recovery Circuit

Output Current vs.
Case Temperature

500

100

30
5

-'--

IZ

OJ

''""
::>

20

~

CJ

I-

::>

Il.

I-

::>
0

10

I

.2
100
Tc -

+
_
-=-

"

25Vdc

(APPROX.)
10

'"

NOTE 3

OSCI LLOSCOPE
NOTE 1

=

~

NOTES •

=

1. Oscilloscope: Rise time:s;;; 3nSi inpu~ impedance
500.
2. Pulse Generator: Rise time ~8nSj source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

125
ISO
175
CASE TEMPERATURE ('C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. iliA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-62

PRINTED IN U.S.A.

SES5701
SES5702
SES5703

RECTIFIERS
High Efficiency, 20A

DESCRIPTION
The SES, super·fast recovery, rectifiers are
specifically designed for operation in
power switching circuits. Their super·fast
recovery time and very low forward
voltage drop make them particularly
efficient in most switching applications.

FEATURES
• Low Forward Voltage
• Fast Switching
• Low Thermal Resistance
• High Surge Capability
• Mechanically Rugged DO·4 Package
• Reverse Polarity Available

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, SES5701 ...................................................................................50V
Peak Inverse Voltage, SES5702 .................................................................................. 100V
Peak Inverse Voltage, SES5703 .................................................................................. 150V
Maximum Average D.C. Output Current at Tc = 100oC ................................................................ 20A
Non·Repetitive Sinusoidal Surge Current B.3 mS ................................................................... 400A
Thermal Resistance, Junction to Case ......................................................................... 1.5·C/W
Operating and Storage Temperature Range ............................................................ - 55·C to + 175·C

ELECTRICAL SPECIFICATIONS
Type

PIV

Maximum
Forward Voltage (VFI
@

Maximum
Reverse Current (IRI
@PIV

Tc=12SoC
SES5701
SES5702
SES5703

50V
100V
150V

.990V
@
20A
tp =300,..s

@ Tc=2SoC

@Tc =12S oC

20iA

4mA

.830
@
20A
tp=300,..s

Maximum
Reverse
Recovery
Time'

lOOnS

'Measured in circuit IF = .5A, IR = 1.0A, IREC = .25A

MECHANICAL SPECI FICATIONS
SESS701-SESS703

ins.

A

-f::J Ell GJ ,
#~.~

UNF·2A

F

A

00·4

mm
1.98 MAX.

.078 MAX.

B

±.437 ±.O15

11.10 ±0.38

C

.405 MAX.

10.29 MAX.

0

.BOO MAX.

20.32 MAX.

E

.424 MAX.

F

.066 MIN. DIA.

G

.430 ±.010

10.92 ±0.25

H

.250 MAX.

6.35 MAX.

10.77 MAX.
1.68 MIN. DIA.

NOTES:

1. Standard polarity Is cathode-ta-stud.
For reverse Polarity (anode-ta-stud) add suffix "R",le. SES5701 A.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 10 inch pounds.
4. Angular orientation of terminal Is undefined.

1/80

6·63

~UNITRDDE

II

SES5701 - SES5703

Typical Reverse Current
vs. Reverse Voltage
.001
.002

I I

V

J

"

g
ffi
g:

a
~

.01
.02
.05
.1

.5

~

_or.

10

20
50

30

IZ

'"0:0:

20

u

10

~

~

V

TJ = +12S'C

.-V

0:

-"

7~ ~=+IS0'C
J
iii

I

/

...0

I

1

I

I

/ V/

II

/

/

/

V

/

/

.4

I

TJ =1+ 75 ,C

V /

0:

+100'C

r- r ~J

2

I

5:

0

f.- .-

//

)/",

:>

.2

0:

'"

TJJ -+150'C
/'

so

...1-+1
T -+2S'C

.005

Typical Forward Current
VB. Forward Voltage

80

.8

.6

VF

1.0

FORWARD VOLTAGE (V)

-

130 120 no 100 90 80 70 60 50 40 30 20 10 0
V, - REVERSE VOLTAGE (% OF PIV)

Maximum Forward Surge
vs. Number of Cycles

Thermal Impedance
vs. Pulse Width

,...-f.-- r-r-

400

I"'"
5: 300
IZ

'"

0:
0:

a

200

I

-~
100

"" '"

J\...JL

~ICYC~E

N

~

.5

oJ
U

Z

'"

.

C
oJ

VV

.2

/

:;:

f"'-.

.1

-'

""

'"~

.05

oJ

'~

J:
l-

I

-

1/
/

.02

J

.01
.01.02 .05.1 .2

ON

I, -

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

V

.5 1 2 5 10 20 50100200
PULSE WIDTH (mSI

1000

200

Reverse-Recovery Circuit

Output Current vs.
Case Temperature

soo

100

25

5:
I-

z

'"0:0:

:>

u

20

15

+

~

I-

:>

0.
I-

:>
0

I
_0

10
5

100
Te -

_
-=-

~

25Vdc

(APPROX.)
10

NOTE 3

'"

~

aSCI LlQSCOPE
NOTE 1

NOTES:

~

1. Oscilloscope: Rise time ~ 3nSi input impedance = SOO.
2. Pulse Generator: Rise time :::;;;8n8'; source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

175
150
125
CASE TEMPERATURE ('C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

6·64

PRINTED IN U.S.A.

SES5801
SES5802
SES5803

RECTIFIERS
High Efficiency, 6DA

DESCRIPTION
The SES, super·fast recovery, rectifiers are
specifically designed for operation in
power switching circuits. Their super·fast
recovery time and very low forward
voltage drop make them particularly
efficient in most switching applications .

FEATURES
• Low Forward Voltage
• Fast Switching Speeds
• High Surge Capability
• Low Thermal Resistance
• Mechanically Rugged 00·5 Package
• Reverse Polarity Available

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, SES5BOl ...................................................................................50V
Peak Inverse Voltage, SES5B02 .................................. _............................................... 100V
Peak Inverse Voltage, SES5B03 .................................................... _. _........................... 150V
Maximum Average D.C. Output Current at Tc = 100°C ............................................ _................... BOA
Non-Repetitive Sinusoidal Surge Current B.3 mS ................................................................... BOOA
Thermal Resistance, Junction to Case ......................................................................... O.B ·CIW
Operating and Storage Temperature Range ............................................................ - 55·C to + 175·C

ELECTRICAL SPECIFICATIONS
Maximum
Reverse Current (IR)
@PIV

Tc=25°C

Tc=150°C

@Tc=25°C

@Tc=150oC

Maximum
Reverse
Recovery
Time'

0.990V
@
BOA
t p = 3OOI'S

O.B50V
@
BOA
t p = 3OOI'S

25,..A

30mA

100nS

Maximum
Forward Voltage (VF)
Type

SES5B01
SES5B02
SES5B03

PIV

SOV
100V
lSOV

@

·Measured in circuit IF =O.5A,IR=1.0A,IREC=O.25A

MECHANICAL SPECIFICATIONS
SES5801-SES5803
ins.
A

225 ± 005

B

060 MIN

UNF - 2A

1.52MIN •

3.96 :t 051

. 158 ± .020

0

.156 MIN FLAT

396 MIN. FLAT

E

.667 DlA. MAX

1694 DIA MAX

F

1(4·28/

mm
5.72.1:013

C

.090 MAX

G

.667:2:.010

H

.375

J

.140 MIN. DIA

K

1000 MAX

00·5

2.29 MAX

1694

::t:

0.25

'.53

L

450 MAX

M

438:!: 015

N

078 MAX

356 MIN. CIA

25.40 MAX
1143MAX
1113:t:

0.38

1.98 MAX.

Note.:
1. Standard polarity Is cathode·to-stud.
For reverse polarity (anode-te-stud) add suffix "R", Ie. SES5801R.
2. All metal surfaces tin plated.
3. Maximum un lubricated stud torque: 20 inch pounds.
4. An angular orientation of terminal Is undefined.
1/80

6-65

~UNITRDDE

•

SES5801-SES5803
Typical Reverse Current
vs. Reverse Voltage

Forward Current
vs. Forward Voltage
200

.001
.002

TJ

>- I-

.005
.01

:<
oS

.02

UJ

.05
.1
.2

~

.5

I-

z

0::

~.

1--1-

UJ

5

10
20
SO

0::
0::

30

u

20

::>

/

0::

~

10

0::

V

"-

)

I

0

/

-"

I--' ~~lsb'c

.-~-

i-t-t--

III

V

C

)

~

/

/

~
I-

600

UJ

~

'"

UJ

400

I
200

u

.5

...

.2

....

.1

0::

.05

z
"cUJ

0::
0::

-~

~

~

~

IVL

~ICYCIE

"::;;
UJ

l:
l-

I"---- r--

I

.-I-f-

.02

./'

VV
VV

V

~ .01

.01.02 .05.1 .2
tp -

N-

10
20
so 100
CYCLES OF 60 Hz SINEWAVE

I-

I--

UJ

so

~

u

I-

...
::>

I-

::>
0

1000

Reverse-Recovery Circuit

Ion

50n

70

Z

0::
0::

.5 1 2 5 10 20 SO lOa 200
PULSE WIDTH (mS)

200

Output Current vs.
Case Temperature

::>

1.2

1.0

V

...

~

.8

FORWARD VOLTAGE (V)

E

Z

::>
u

V

Thermal Impedance
V5. Pulse Width

~

~

/

.6

V, -

Maximum Forward Surge
vs. Number of Cycles

+7S'C

J

/

.4

130 120 110 100 90 80 70 60 so 40 30 20 10 a
VOLTAGE IN % OF PIV

800

I

/

I

/

~

fr t- TJ -

/

SO

lZ

r- h _TJ = +IOO'C
r- I>'""'~TJ = +I~'C

./

"s.

70

~

r--- r--- r TJ = 2S'C

:

= +IS0'C

100

30

I
_0

10
100
Te -

+
_
-=-

'" "'"

25Vdc

(APPROX.)

In

NOTE 3

'"

OSCILLOSCOPE
NOTE 1

=

~

NOTES:
1. Oscilloscope: Rise time ~3nS j input impedance
500.
2. Pulse Generator: Rise time ~ 8nSi source impedance 100.
3. Current viewinl resistor, non-inductive, coaxial recommended.

=

""

125
ISO
175
CASE TEMPERATURE ('C)

UNITRODE CORPORATION,S FORBES ROAD
L~XINGTON, MA 02173, TEL. (617) 861-6540
TWX (710) 326-6509 ' TELEX 95-1064

6-66

PRINTED IN U.S.A.

UES501-UES505

RECTIFIERS
High Efficiency, 50 Amp
FEATURES

DESCRIPTION:

•
•
•
•
•
•
•
•

This series of High Efficiency Power
Rectifiers allows circuit designers to design
high current, high frequency supplies with
very low diode losses. Reverse recovery
time is typically 1/10 - 1/100th of equivalent
power rectifiers, with even lower forward
voltage.

50A Continuous Rating at Case Temperature of 12S'C
Exceptional Efficiency
Low Forward Voltage
Extremely Fast Reverse Recovery Time
Extremely Fast Forward Recovery Time
High Surge
Radiation Tolerant
Rugged, High Current Termination

•

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

Type

SOV
75V
100V
12SV
lS0V

UES501
UES502
UES503
UES504
UES505

Maximum Average D.C. Output Current

@ Tc =12S'C
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating Temperature Range
Storage Temperature Range.
Thermal Resistance

...... SOA

............. "

.... 600A

-65'C to +175'C
-65'C to +17SoC

. ................. l'C/W

MECHANICAL SPECIFICATIONS
UES501-UES505

1---A~25~ln;~5

572!: 0.13

B

060 MIN

152 MIN

C

156" 020

396'" 0 51

D
E
F
G

156 MIN FLAT
6670lA MAX
090 MAX
677:!: 010
H
3HMAX
J
140 MIN OIA
K 1000 MAX
l
450 MAX
M
438:!. 015
N
078 MAX

00-5

3 96 MIN FLAT
1694 DlA MAX
229 MAX

1720'" 025
953 MAlt
3 56MIN DlA
2540 MAX
1143 MAX

11 13'" 038
I 98 MAX

Notes:
1. Angular orientation of terminal is undefined.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 30 inch pounds.
4. All dimenSions in Inches.
5. Polarity is cathode to stUd; for anode to stud add suffix "R".

6-67

~UNITRDDE

UES50l-UES505
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Maximum
Forward
Voltage
Drop

Peak
Inverse
Voltage

Type

UES501
UES502
UES503
UES504
UES505

SOV
7SV
100V

Maximum
Leakage
Current
125'C

2S"A

lOrnA

SOns. lA-lA-O.SA

-

.95V@50A
(pW= 250rns)

125V

25'C

Maximum Reverse
Recovery Time
trr @ IF~IR.. IREC

lS0V

Pulse Thermal Impedance
vs. Pulse Width

Output Current vs. Case Temp.
~

~

50

....

40

OJ

0:
0:

::>
u 30
....
::>

......

0.9

c' 0.8

"-

I

'\

'"\

I

155

":;;

0.4

"'....I

0.3

....z

165

"....
0:

5K
2K

"'

1K

.

VI

..J

............

~
....
z

'--

t---

--

"'0:0:

TYPICAL

::>
u

t--- ~

1\
\.

500

'\

"'-

400
300

-~

"'............

I

t---

::> 500

200

............

200
100

5

10,1.15

50 100/15
500
PULSE DURATION

UNITRODE CORPORATION· 5 FORBES ROAD
lEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 9,5.1064

Ims

25

Multiple Surge Current vs. Duration
600

2DK

::>
u

50
100
200
500
15
PULSE WIDTH -I(ms)

20

CASE TEMPERATURE ('C)

SDK

"'0:0:

/

/

175

look

10K

V

01

Square Pulse Current vs. Duration
for Non-Repetition Square Wave

....
z

/

0.2

"'zVi

\
Tc -

0.6

0:

10

145

c

/
/V

..J

_0

135

0.7

~ 0.5

\

125

"'uz

."'"

1\

::> 20
0

~

.//

v

""

~
Z

e

5

lOms

1

2

10

20

-

50

100

200

HALF CYCLES OF 60Hz SINE WAVE

6-68

PRINTED IN U.S.A.

UES501-UES505

Typical Forward Current
vs, Forward Voltage
500

v~

200
~

...

so

'"0:0:

20

:::>
0
0

0:

...
.5
.2
.1

..."'>a:

1/

I-

~y;;
t- '"L ,......

.1

.3

V

'"

•

,I

.7
.9
1.1
V.- VOLTAGE (V)

I-t-:r
J

1.3

1.5

1/

-1'l!J;~

.5

II

T -UKI'
J

I-

J....I--"
y

TJ-125'

10
20

1so·d-

TJ

J

I I
140

Reverse-Recovery Circuit

120 100
80
60
40
20
VOLTAGE - IN % P.I.V.

Characteristic Waveform
t" r

-

lREC·1f2A

1A

'\
IJ
NOTES:
1. Oscilloscope: Rise time ~ 3 ns; input impedance::::: 50 n.
2. Pulse Generator: Rise time ~ 8 OS; source impedance 10 Po.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE CORPORATION - 5 FORBES ROAD
LEXINGTON, MA 02173 - TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

Ld"
2~'~_

I-

SO
100

J-.""J

.5

I-

...a:

-

t>

.05
.1
.2

:::>

m'TI ~"I~"
..8 .n D1
TJ

'"a:0:

...u

II II

III/

~

0:

;;
.§.

.005
.01
.02

...z

[/f/ VI!

10

0

~E:::f;':

V:rA"
lLfL ILV

100

z

Typical Reverse Current vs. Voltage
.001
.002

6-69

1

!

r

1A

SET TIME BASE
FOR 10 NS/CM

PRINTED IN U.S.A.

RECTIFIERS

UES701-U ES703

High Efficiency, 25 A

DESCRIPTION
Designed to meet the efficiency'demand
of switching type power supplies, these
devices are useful in many switching
applications.
The low thermal resistance and forward
voltage drop of this series allows the
user to replace 00-5 size devices in
many applications.

FEATURES
• Low Forward Voltage
• Very Fast Switching
• Low Thermal Resistance
• High Surge Capability
• Mechanically Rugged
• Both Polarities Available

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage,. UES701 .
Peak Inverse Voltage, UES702 .....
Peak Inverse Voltage, UES703 .
Maximum Average D.C. Output Current at Tc lOO'C .
Non-Repetitive Sinusoidal Surge Current at 8.3ms .
Thermal Resistance, Junction to Case ......
Operating and Storage Temperature Range

.. ......... 50V
.. .......... 100V
.. ............... l50V
'" 25A
..400A
1.5'C/W
...... -55'C to +175'C

=

POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate 'equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL SPECIFICATIONS
UES701-UES703

mm

ins.
A
8

.078 MAX
437 ~ 015

C

.405 MAX

1029 MAX.

D

20.32 MAX.
10 92 ~ 0 25
6.35 MAX

G

800 MAX
430 ~ 010
250 MAX
424 MAX

H

066 MIN DIA

E
F

DO-4

1.98 MAX
11.10 ±O.38

10.77 MAX.
1 68 MIN. DIA.

Notes:
1. Standard polarity is cathode-to-stud.
For reverse Polarity (anode-la-stud) add suffiX I4R", ie. UES701R.

2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: ·15 inch pounds.
4. Angular orientation of terminal is undefined.

6-70

~UNITRODE

UES701-UES703

ELECTRICAL SPECIFICATIONS
Type

UES701
UES702
UES703
* Measured

50V
lOOV
150V

in circuit

'F

=

O.SA,

'R

Maximum
Reverse Current
@

Maximum
Forward Voltage
@

PIV

Tc =2S'C

Tc = 12S'C

.950

.825

Tc= 12S'C

2Ol'A

4mA

35nS

@

@
tp

Tc= 2S'C

Maximum
Reverse
Recovery
Time*

25A
3ool'S

=

t

p

25A
3OOI'S

=

= lA, 'REC = O.2SA

Typical Reverse Current
vs. Reverse Voltage
.001
.002

I I

.s
I-

.05

~

.1
.2

~
c:
'"

1

'"a:c:

-

20
50

-r- f::TJ
V

I
10

20

/ I ,I

:>

2

_01:

J

Z

--

+100'C

u

/

c:

~
c:

I

/

-~

II

1
.4

I

I

I

V, / /

1= F=i"=+IS0'C
L _I ~ ~
I

I

I

II

/1

if II

...0

1--/

TJ = +12S'C

10

0

f-- /

/"p . .

) V~ ~J =~7S'C
V V'- T = +125'C

~ 30
I-

.5

~

TJ = +1 50 ':"50

J

.01
.02

Z

'"~

./

J-+
T - +2S'C

.005

<"

Forward Current
Forward Voltage

VS.
80

II

- - = TYPICAL V,
- - - - = MAXIMUM V,

.6

V, -

1.0

.8

FORWARD VOLTAGE (V)

130 120 lIO 100 90 80 70 60 50 40 30 20 10 0
v, - REVERSE VOLTAGE (% OF PI V)

Maximum Forward Surge
vs. Number of Cycles
400

~

~ 300
I-

Z

'"c:c:

a200

.

I

-~

100

;:

1.0

'"

.5

E

'" '" "'-

IV\...
~ICYC~E

u
Z

<5

'"

11.

"'" -

"~
'"

.05

I

.02

i

.01

:I:

I-

Z

20

'"c:c:

:>

u

~

~ '\

15

I-

:>

11.
I-

:>

10

0

I
_0

100
Tc -

--

V

..-f- !-'

/

.1

.J

1/
/

l-

''-...,

.01.02 .05.1 .2

N

tp -

.5 1 2 5 10 20 50100200
PULSE WIDTH (mS)

1000

200

Reverse-Recovery Circuit

Output Current VS,
,Case Temperature
25

VV

.2

::;

10
20
SO
100
N ~ CYCLES OF 60 Hz 51 NEWAVE

~

Thermal Impedance
vs. Pulse Width

son

Ion

+
_
-=-

~

25Vdc
(APPROX.)

In

NOTE 3

"" ""

OSCILLOSCOPE
NOTE I

=
NOTES:
1. Oscilloscope: Rise time ~ 3nsj input impedance = 500.
2. Pulse Generator: Rise time ~ 8nsj source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

"'"

175
125
150
CASE TEMPERATURE ('C)

UNITRODE CORPORATION. S FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

6-71

PRINTED IN U,S.A.

RECTIFIERS

UES704--U ES706

High Efficiency, 20A

FEATURES
• Very Low Forward Voltage (l.15V)
• Very Fast Recovery Times (50nSec)
• Low Thermal Resistance
• High Surge Capability
• Mechanically Rugged
• Both Polarities Avai lable

DESCRIPTION
The UES704 series is specifically
designed for operation in power switching
circuits operating at frequencies of at
least 20 KHz.
The low thermal resistance and forward
voltage drop of this series allows the
user to replace 00-5 size devices in
many applications.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES704 ........
.................................................................200V
Peak Inverse Voltage, UES705
.....................
.. ..................... 300V
Peak Inverse Voltage, UES706 ......... ............................ .....................
.. ...................400V
Ave. D.C. Output Current, 10 @ Tc 100'C .......
.. ........................................20A
Surge Current, 8.3mSec ........................
.. ...........................................300A
Thermal Resistance, Junction to case
.....................................l.5'C/W
Operating and Storage Temperature Range
................ -55'C to +150'C

=

POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL SPECIFICATIONS
UES704-UES70&

A
B

078
.437
C .405
D .800
E .430
F 250
G 424
H .066

DO-4

mm

ins.
MAX.
± .015
MAX.
MAX .
± .010
MAX
MAX .
MIN. DIA.

1.98 MAX.
11.10 ±0.38
10.29 MAX.
20.32 MAX.
10.92 ± 0.25
6.35 MAX.
1077 MAX.
1.68 MIN. DIA

Notes.
1. Standard polarity is cathode-ta-stud.
For reverse Polarity (anode-ta-stud) add suffix "R", ie. UES704R.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque. 15 inch pounds.
4. Angular orientation of terminal is undefined.

4/79 (Rev. 1)

6-72

~UNITRDDE

UES704-UES706

ELECTRICAL SPECIFICATIONS

Type

Maximum
Forward Voltage

UES704
UES705
UES706

200V
300V
400V

Maximum

Maximum

T c =25'C

Tc= 125'C

T c =25'C

T c =l25'C

Reverse
Recovery
Time*

1.25V
@ 20A
tp =3OOI'S

1.l5V
@20A
tp = 300l'S

5Ol'A

lOrnA

SOnS

PIV

Reverse Current

* Measured In Circuit IF = O.SA, IR = lA, 'REe - O.25A

Output Current vs.
Case Temperature

II

Peak Output Current vs.
Case Temperature
100

~

30

I-

Z

OJ
0::
0::

:> 20

u

I-

€

-

-........

:>
Q,

I-

:>
0

80

I-

10

I
_0

100
Tc -

i50::
0::

""""

110

120

0)

<..>

60

I0)

0..

I0)

0

""'"

130

140

'"~

40

0..

1

20

150

CASE TEMPERATURE ('C)

T, - CASE TEMPERATURE ('C)

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage
100
~

50

~

~ 20
I-

10

~

5

z

~

1

'"

:;: .5

0::

~ .2

IV

wi- ·

.02
.01

r-- II

1/ J1

'f..
II

~

--

II

2~

/

10 20 30 40 50 60 70 80 90 100 110 120 130 140150
V. -

6-73

~

I-""'

o

V, - FORWARO VOLTAGE IV)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-- -

10

11/

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.11.2 1.3 1.41.5

12S'C

100

Ill:

I

I,...-

I-"ido,c

1/
II

If

w

'"

Ill:
OJ

'f..
II f--

/1

IK

:>
u

0/

--

If

Z

OJ
0::
0::

!/.
I

I - h1o'c

10K

I-

1- I
IV
""IJr-y y
,0 ,0

'f..

_" .1
.05

<"

.3

1/

/

V"
l,...;"

1/
/ /

I

~/

1/

0::

G2

lOOK

~ 7"

REVERSE VOLTAGE (% OF PIV)

PRINTED IN U.S.A.

UES704-UES706

Maximum Forward Surge
VS. Number of Cycles
300

g

g

"'u
z

f"-

C!i

""-

200

'"'"

I,.

vV I-f-

,5

"'II.

,2

..

,1

vV'

..J

"'-

::;;

l'--,

~

"J\..JL

,ICiCLE

"''"

:I:
l-

I

~

I'--- r--

N

,05

t-

V

V

::;;

:::>
u

_ll: 100

Thermal Impedance
vs. Pulse Width

V

lL

,02

.01
,01.02 ,05,1 ,2
tp -

,5 1 2 5 10 20 50 100 200
PULSE WIDTH (mS)

1000

o
1
N-

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

200

Reverse-Recovery Circuit

soo

Ion

+
_

-=-

25Vdc

(APPROX,)

In

NOTE 3

OSCILLOSCOPE
NOTE 1

=
NOTES.
1. Oscilloscope: Rise time ~ 3nsj input impedance 500.
2. Pulse Generator: Rise time ~ 8nsi source impedance 100.
3. Current viewing resistor, non·inductive, coaxial recommended.

=

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-74

PRINTED IN U.S.A.

RECTIFIERS

UES801-UES803

High Efficiency, 70 Amp

FEATURES
• High Continuous Current Rating
• Very Low Forward Voltage
• Very Fast Switching Speeds
• High Surge Capabi I ity
• Low Thermal Resistance
• Mechanically Rugged
• Both Polarities Avai lable
• Available with Flexible Top Lead

DESCRIPTION
The UESSOI Series is specifically designed
for operation in power switching circuits
operating at frequencies of at least
20 KHz. The very low forward voltage and
very fast recovery time make them particularly suited for switching type power
supplies.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES801
Peak Inverse Voltage, UES802 .
Peak Inverse Voltage, UESS03 .
Maximum Average D.C. Output Current at Tc = lOO'C
Non-Repetitive Sinusoidal Surge Current S.3 ms
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

.. 50V
... 100V
. lSOV
70A
... SOOA

0.8'C/W
-55'C to +175'C

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

POWER CYCLING
. These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

MECHANICAL SPECIFICATIONS
UES801-UES803

225

+

005

060 MIN

572

-<-

0 13

C

IS6:!: 020
156 MIN FLAT
667 alA MAX
090 MAX

396 MIN FLAT
1694 alA MAX
2 29 MAX

677:t 010

1720:t025

375 MAX
140 MIN DIA
I 000 MAX

V4·28
UNF·2A

o

1 52 MIN

o
E

00-5

396+051

953 MAX
3 56 MIN DIA
2540 MAX

450 MAX

11 43 MAX

M

438:t 015

11 13:t 0 38

N

078 MAX

198 MAX

Noles:
1. Standard polarity is cathode-to-stud.
For reverse polarity (anode-to-stud) add suffix "R", ie. UESB01R.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 20 inch pounds (20 kg. em).
4. Angular orientation of terminal is undefined.

5/80
(Revised)

6-75

~UNITRODE

•

UES801·UES803
ELECTRICAL SPECIFICATIONS

Type

Maximum
Forward Voltage
@

PIV

UES801
UES802
UES803

SOV
lOOV
lSOV

Maximum
Reverse Current
@

T c =2S'C

Tc = lSO'C

.975V

.840V

@

@

70A
t.=300pS

70A
t.=300pS

Maximum
Reverse
Recovery

Tc _2S'C

Tc = lSO'C

Time*

25pA

30mA

SOnS

Nole. Add 0.03 Volts to Max Forward Voltage for Flexible Top Lead Option •• Measured in circuit I, = 0.5A. I. = lAo I.oc = 0.25A

Output Current vs.
Case Temperature

~

70

.........

f-

....Z
a:
a:

so

:l
U

I~

f-

:l
Il.

f-

:l

30

Peak Output Current vs.
case Temperature

g

IF Duty Cycle

z 180
....

I~

'"'"

::>
u
>::> 140
Il.
>::>

~

0

I
_0

10

0

'"OS

100

1

60

Il.

"\

100
Tc -

220

>-

ISO
175
125
CASE TEMPERATURE ('CI

-

20

1o• Average of Rectified
Half Sine

0
100

120

140

160

Tc - CASE TEMPERATURE ('C)

Typical Reverse Current
VS. Reverse Voltage

Forward Current
Forward Voltage

VS.

r--,....--,---r--.-~"7""TTT"-..,

.001
.002

100 1--+--+-+--bh.y~L..t---;

.005

200

J
I-- 1--/

l - f-

.01

~

50

z

I---t---+--'I---:~I---I-+--!----I

....

5

a'"'"o 20 ~-+---+--f,
'"
~
~

10

<- .05 .02

f-

z....

0:
0:
:l

~-+---+--I

u

f-

/- T J = 25'C

.1
.2

)

.5

I

I--

-~

./- _ TJ = +IOO'C

I-- p- ~TJ
10
20

1

~_~~~L-~_-U_~~

o

0.2

0.4

v, -

0.6

0.8

1.0

1.2

III

1.4

J

i--" ~15h'c
I I

i

130 120 110 100 90 80 70 60 SO 40 30 20 10 0
VOLTAGE IN % OF PIV

fORWARO VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

H

so It!

__~~

=+I;~'C

/

6-76

PRINTED IN U.S.A.

UES801-UES803

Maximum Forward Surge
vs. Number of Cycles
Thermal Impedance
vs. Pulse Width
800

~
I- 600
z

...a:
a:

OJ

u

400

I

-~
200

~

."" ""

~

z

Cl

~

e-f-f-

.5

/"

.2

VV

::;;

~

..J

«
::;;

~

.1

...a: .05
J:
l-

' -:---

f\J'L.

~ICYC~E

I

.02

V

V

~ .01

'"

..... V

.01.02 .05.1.2

.5 1 2

5 10 20 50 100 200

1000

t. - PULSE WIDTH (mS)
2
N-

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

200

Reverse-Recovery Circuit
50n

100

+
_
-=-

25Vdc
(APPROX.)

In

OSCILLOSCOPE
NOTE 1

NOTE 3

NOTES.
1. Oscilloscope: Rise time ~ 3ns; input impedance = 500.
2. Pulse Generator: Rise time ~ 8nsj source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

MECHANICAL SPECIFICATIONS
DO-5 with Flexible Lead

FLEXIBLE TOP LEAD (OPTIONAL)
Add an "F" Suffix to Part Number.

Standard JEDEC
00·5 Package

@

N

h=TM1

~ #8

R

, iEbIp

FleXible
I
Cable 7 X 95/361:L

..............

~o

II

Peak Ou~ut Current vs.
Case em perature
180

~

1'-.

g 160
"-

>-

~ 140

f'-.

"-

20

o

50nS

200

511.

5

Reverse
Recovery
Time'"

_12S~C

= O.2SA

60

~ 50

Tc

30mA

Output Current vs_
Case Temperature

....z

Maximum

Maximum
Reverse Curent

'"'"::>u
>-

I'\.

10

120

130

80

'"~

\

o
110

100

0

>::>

\
100

1l:

140

1

60
40

150
20
70
T, - CASE TEMPERATURE ('C)

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage
1K

lOOK

I

500

_ 200

~ j?


0:


1/
.."

125'C

..... r-"
100'C

r-"

lK

::1

~

'25'C

100

0::

I

11/

--

~

10

-

lL

lL

A

1

o

~2~A~~J~SUUUUUUU

V, - FORWARO VOLTAGE (V)

UNITROOE CORPORATION. S FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

~
UJ

11°'c i-"

U

-", flr1!f-"i
111 Ii

1/

V

UJ

'"f.~1

II

~ 10K
~

-~"O~1,ol/
q •

0:

o

t""

I'"""

10 20 30 40 50 60 70 80 90 100110120130140

V. -

6-79

REVERSE VOLTAGE (% OF PIV)

PRINTED IN U.S.A.

UES804-UES806

Maximum Forward Surge
vs. Number of Cycles
600

~
IZ

'"0:0:

500

400

:>
u 300

I

-~

200

"" ""~

~

z

~

I-f-t-

.5

/'

.2

-'

........

«

.1

I/'V

::0

a: .05
w

~

X
l-

b-..

--

1

I

V

.02

~ .01

t--

N

V

VI-""

vV

::0

CYCLE

I

vs. Pulse Width

«
a

f--.!\J'L
It----<\I

100

Thermal Impedance

.01.02 .05.1 .2
tp -

.5 1 2

5 10 20 50 100 200

1000

PULSE WIDTH emS)

o
1

2

10
N-

20

100

50

200

CYCLES OF 60 Hz SINEWAVE

Reverse·Recovery Circuit

son

100

+

-=_

25Vdc

IAPPROX.)

III

NOTE 3

OSCILLOSCOPE
NOTE 1

=
NOTES:
1. Oscilloscope: Rise time ~ 3nsj input impedance 500.
2. Pulse Generator: Rise time ~ 8nsj source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

=

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-80

PRINTED IN U.S.A.

UES1001-UES1003

RECTIFIERS
High Efficiency, 1A
FEATURES
• Very Fast Recovery Times
• Very Low Forward Voltage
• Small Size
• Convenient Package

DESCRIPTION
An axial leaded power rectifier useful
in many switching applications.
Particularly suited where very fast
recovery and low forward voltage are
required.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES1001 ...................................................................................50V
Peak Inverse Voltage, UES1002 .................................................................................. 100V
Peak Inverse Voltage, UES1003 .................................................................................. 150V
Maximum Average D.C. Output Current atT L = 75·C, L=318" .......................................................... 1A
Non·Repetitive Surge Current at 8.3mS ............................................................................30A
Thermal Resistance at L = 3/8' ................................................................................75 ·ClW
Operating and Storage Temperature Range .............................................................. - 55·C + 175·C

ELECTRICAL SPECIFICATIONS
Type

PIV

UES1001
UES1002
UES1003

50V
100V
150V

"Measured In circuit IF

TJ =25°C

TJ =100oC

@ TJ =25°C

@TJ =100°C

Maximum
Reverse
Recovery
TIme'

.975V
@
1A

.895V
@
1A

2"A

50"A

.25nS

Maximum
Reverse Current (IR)
@PIV

Maximum
Forward Voltage (VF)
@

= .5A, 'R = 1.0A, 'REC = .25A

MECHANICAL SPECIFICATIONS
UES1001·UES1003

I

1.0 min

,T, 25.4mm-1
I

.bS5 max

.

028 ± .001

.071mm ± .03

2.16mm

--'I_

L -_ _ _- ' _ _ _ _ _

.170 max

-4.32mm -

1/10

BODY Al

I

6·81

~UNITADDE

II

UES1001-UES1003

I

.001

10

1,,-

Ld~ 1,-

.

5

~

zUJ

v:

J,;-

""" '" "

L=Ve"

:0

"::;:0

~

::;

X
« 1

::;

~

~

L _ ¥e"
I

I

J--..

---

L::=¥4"

so

25

TL -

. . .2

z

II.;,'"

~ .1

'"
""-

0:

~ .05

~I--

I

_- .02

'\

'"

i'-..

II

.01
.005

~\

.002

~

75
100
125
150
LEAD TEMPERATURE (OC)

.01

~

.

1/1/ II J

g

/

0:
0:

l-'
~

,.....

1/

,:

"]'-'

,-'

:~

zUJ

0<'>

II~
~ ~
II
-!- J.

:0

"I

V
.05
.1

l--I-~

i-;.J = 25°C

.5

-"

J.-

II I

_f--

I--

~:+l25°C
T

t,....V V

J

50

100

120

.1 .2 .3 .4.5 .6 .7 .8 .91.01.11.21.3

175

1-1-

T - +75°C

10

I

.001

8,iloJ

I-:::I::::b::-

1/1/ '11/

.5

T,

0:
0:

Typical Reverse Current
vs. Voltage

Typical Forward Current
vs. Forward Voltage

Output Current
VS. Lead Temperature

100

80

60

40

20

VOLTAGE IN % OF prY

V~-VOLTAGE(V)

Peak Output Current VS.
Lead Temperature
Forward Pulse Current
VS. Duration

4 0 f-"....+--+--+--h~+-:-..,...+-:--+-I
10,000

3:

Square Pulse Current vs.
Duration for Non-Repetitive Pulse

5,000

f-

z 3.2

5

'"'"'":::>
u
f-

ir

~ 1,000
UJ

"
UJ

0

0..

-i-

:0

:::>

'"~

500

0:
0:

2.4

f-

~
:0

16

100

I--1-1"---

50

0..

j

10

.8

.1.u5

50

90

70
T, -

110

130

150

f'..

'" 80

~

Z

~

0:

60

"'l;1

.

"

l'--

~ 40
o
tf. 20

2

50

--

lOllS
100.u5
PULSE DURATION

--

5

1m.

lOms

170

Reverse·Recovery Circuit

ion

+

l'

~

_
-=-

TL MOUNT
@ Length = ¥e"

i'--

R::.l

5

10 20

50

100 200

SOD

In

OSCILLOSCOPE
NOTE 1

=

NOTES:
1. Oscilloscope: Rise tim~3nS; Input Impedance=50Q.
2. Pulse Generator: Rise tlme
'
u

"'~
:>

..

f'..

<.> 80

100

SO

10
•1,us

.5

~

---

0:

r--

60

"'<.>0:

r-- r--

..

-- r--

SO

lO,us
lOO.us
PULSE DURATION

~
a
f.

r-

1m•

5

'""""

b"

r-...~

Tl MOUNT
@ Length ~ 'iii"

40

I"--20

R=:::tpr["ted CirCujit -

1

lOms

2

5

10 20

SO

100 200

500

1000

CYCLES AT 60 Hz SINE WAVE

Reverse-Recovery Circuit
SOP.

lOP.

+
_

-=-

25Vdc

(APPRDX.)
10
NOTE 3

OSCILLOSCOPE
NOTEl

NOTES:
1. Oscilloscope: Rise time ~ 3ns; input impedance = 500.
2. Pulse Generator: Rise time ~ 8nsj source impedance 100.

3. CUrrent viewing reSistor, non·inductive, coaxial recommended.

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

6-85

PRINTED IN U.S.A.

•

UESII04-UESII06

RECTIFIERS
High Efficiency, 2A
FEATURES

DESCRIPTION

•
•
•
•

The UESll04 series is specifically
designed for operation in power switching
circuits operating at frequencies of at
least 20 KHz.

Very low Forward Voltage (l.15V)
Very Fast Recovery Times (50nSec)
Small Size
Convenient Package

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UESll04
.......................................................................200V
Peak Inverse Voltage, UESll05 .
............300V
Peak Inverse Voltage, UESll06 .
...................400V
Maximum Average D.C. Output Current, 10
@ TA
25'C (Free Air)
....... .lA
@ TL
50'C, L= 3A,"
.............................................................2A
Surge Current, 8.3mSec .... .........................
.................................................20A
Thermal Resistance @'l
%" ....
..... ..........................................38'C/W
Operating and Storage Temperature Range '" .. .... .........
............... -55'C to +150'C

=

=

=

MECHANICAL SPECIFICATIONS
UES1104-UES1106

BOOY A

.085N
TYP.
~ 2.2mm

I- .7f?~~::'

j - - .2~~~~X._

f.-_ _ _ _ 1·1~~~~N. - - - - - 0 1

[bJJ
4/79 (Rev. 1)

6-86

_UNITRDDE

UESll04-UESl106

ELECTRICAL SPECIFICATIONS
Maximum
PIV

UESll04
UESll05
UESll06

200V
300V
400V

Maximum
Reverse
Recovery

Maximum
Reverse Current

Forward Voltage

Type

T J =25°C

TJ = 100°C

1.25V
@lA
tp =300,uS

1.15V
@lA
tp = 3001'5

@ PIV, TJ = 25°C

= 100°C

TJ

10/,A

T!me*

SOnS

200,uA

* Measured In Circuit IF _ a.5A, 1", - lA. I"'EC _ O.2SA

Output Current vs.
Lead Temperature
2.5 , - - , - - , - - - , - - - , - - , - - - - ,

~

2

'"~

1.5

....
z

•

Peak OU¥!ut Current VS.
Lead em perature
50

f------"'k-+-_+_

~

40

f-

=>

al

f---+--+--"<:--t-----t--f---I

'"'"u
:;,

u

....

30

f-

=>

:;,

::=>

a.
f-

:;,
0

o

I

.5

'"a.
i:i

1----+--+--P....-t-\--+--1

_0

1
50
T, -

20

10

75
100
125
150
LEAD TEMPERATURE (0G)

T, - LEAD TEMPERATURE (0C)

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage
10

~
z

....

10K

:;::::
~~
~ '//'

1

~j

W
0:
0:

~ II

=>

U

~
I .01

-~

.001

1K

!z....

~ 100

=>

~ .1

~
0:

~

/

/

/

....

I

1JT

f~ &
f- '-;';'
f- II II

;,

!f!

If)

II
5?

II:

....

~

~~

III

1/

_tit

J...,.../

V

,;

100°C

1. 0

o.1

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.01.11.21.31.41.5

o

V, - FORWARD VOLTAGE IV)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

I'

10

II:

I

.)1- "1

J...~ J...

1rOC

u

6-87

"

20
V. -

40

60

80

rc

100

120

140

160

180

REVERSE VOLTAGE (% OF PIV)

PRINTED IN U.S.A.

UESl104-UESl106

Output Current vs.
Ambient Temperature.

Multiple Surge Current
vs. Duration
100

~
~ .8
....z
w
cr
cr .6

"",,-

"'-"\

u

....

:0

.4

:0

'"

0:

uJ

" 40
:::>

1\
\

.2

25

'"

75

100

~

"0

#-

20

TL MOUNT
= %"

@ Length

r- R==:tprrted Circut

1\

\
50

"'" I'-... ......

60

0:

_0

o

aD

j::

0

I

.

'\

:0

.......

"
z

125

1

2

10 20

SO

100 200

500

-1000

CYCLES AT 60 Hz SINE WAVE

150

TA -AMBIENT TEMPERATURE ('C)

Reverse-Recovery Circuit
50 t!

+
_
-=-

25Vdc
(APPROX.)

1t!
NOTE 3

OSCILLOSCOPE
NOTE 1

NOTES:
1. Oscilloscope: Rise time :s;; 3nsj input impedance:::::: son.
2. Pulse Generator: Rise time::;;; 8nsi source impedance 100.
3. Current viewing reSistor, non-inductive, coaxial recommended.

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-88

PRINTED IN U.S,A.

RECTIFIERS

UES1301-UES1303

High Efficiency, 6A

FEATURES

DESCRIPTION

•
•
•
•

Now power rectifiers in axial leaded
package to meet the most demanding
switching applications. An industrial
product with military reliability.

Very Low Forward Voltage
Very Fast Recovery Times
Small Size
High Surge

II
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UESl301
Peak Inverse Voltage, UES1302
Peak Inverse Voltage, UES1303
Maximum Average D.C. Output Current at TL 75·C, L
Non-Repetitive Sinusoidal Surge Current at 8.3ms
Thermal Resistance at L = %"
Operating and Storage Temperature Range

=

....... 50V

................. lODV
................ 150V

=%"

.6.DA
.... 125A

........ 2D·C/W
.... -55·C to +175·C

MECHANICAL SPECIFICATIONS
UES1301-1303

h,-

BODY Bl

l.Omm

25.4mm_1

\45 max

.
.040 ± .001
l.02mm ± 03

l68mm

max_I

'------' ------'-

1_.200

508mm

6-89

~UNITRaDE

UE5130I-UE51303

ELECTRICAL SPECIFICATIONS

Type

PIV

UE51301
UE51302
UE51303

SOV
lOOV
lSOV

Maximum
Forward Voltage
@

Maximum
Reverse Current

Maximum

@

Reverse

TJ =2S'C

TJ _100'C

TJ -2S'C

TJ _100'C

Recovery
Time*

.925V

.850V
@6A
tp=3001'5

51'A

lSOI'A

30n5

@6A
tp = 3001'5

• Measured in circuit I. = O.SA, I. = lA, IROC = O.2SA

VS.
12

,

::>

r-

~-

W;\.

"- 1\

"

L=~"""

6

~
.~
L_'I
u

12

I-

_

"'c:c:

I-

'\

::>

0I-

::>
0

1""- \

" "i'..

'"~
0-

\

I

1

" ."'.!\

4

""- l\\

'\

50
75
100
125
150
T, - LEAD TEMPERATURE ('C)

25

50

70

175

T, - LEAD TEMPERATURE ('C)

Typical Reverse Current
VS. Voltage

Typical Forward Current
VS. Forward Voltage
100

.01

.2

JJ I I
~

I

I-

II

Z

w

1
~

VII

f--,
05
02
.01

I,! ...

I

I l-

I

T

= +7S"C

100

T

= +100"C

T

= +12S"C

200

II I

1000

,J

{

~
120

1 ,2 .3 4 .5

6

7 .8 9 1 0 1.1 1 2 1.3

V

10
_" 20

I-

I

I ' ,

2

'I

JI;1.'~

'

J

::>

I

-!II ,,.......

1......

f- r-f= 25"C

T

II:
II:

-~o, •
- $ I ~

I

f-

I-

-

()

-

.1

r//V

10

I

T J ::::; -SOOC

..-::~ ?:~

20

a:
a:
::>

A

.02

50

I I

J.

-I--

,J II I L

iI

k-

I I I

100
80
60
40
20
VOLTAGE IN % OF PlY

Y, - VOLT AGE (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWlC (7~g) 326-6509 • TELEX 95-1064

6-90

PRINTED IN U.S.A.

UESl301-UES1303

Forward Pulse Current vs. Duration
10,000
5,000

g

""'"'"- r---

~ 1,000

::ta:

r--

500

Square Pulse Current vs.
Duration for Non-Repetitive Pulse

100

..

SO

:J

I"

,,80

z

:::---.

:J

"!J"'

Multiple Surge Current vs. Duration
100

J

-....... t'--

r'-...

~

a: 60

w

"~

r--

""- I'..
I"""

a:

40

~

Nl=::: t-

l:;

"20

10

.11'5

.5
Ips

SO

Printed CircUit

I I

5

1m_

101'5
1001's
PULSE DURATION

T, MOUNT
@L..".,=\i"

IOms

1 2

5

10 20

50

100 200

500 1000

CYCLES AT 60 Hz SINE WAVE

Reverse·Recovery Circuit
10 II

5011

+

-=-=-

25 Vdc
(APPROX.)

III
NOTE]

OSCILLOSCOPE
NOTEI

=
NOTES:
1. Oscilloscope: Rise time :s:; 3ns; input impedance
500.
2. Pulse Generator: Rise time ~ 8ns; source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

=

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064
.

6-91

PRINTED IN U.S.A.

II

RECTIFIERS

UES1304-UES1306

High Efficiency, 5A

FEATURES·
• Very Low Forward Voltage (1.15V)
• Very Fast Recovery Times (50nSec)
• Small Size
• High Surge

DESCRIPTION
The UESl304 series is specifically
designed for operation in power switching
circuits operating at frequencies of at
least 20 KHz.

ABSOLUTE MAXIMUM RATINGS
. Peak Inverse Voltage, UES1304 ................... . .........................................................................200V
Peak Inverse Voltage, UES1305 ... .
.........................................................................300V
Peak Inverse Voltage, UES1306 ................... . .........................................................................400V
Maximum Average D.C. Output Current, 10
@ TA
25'C (Free Air) .........
.........................................................................................3A
@ TL = SO'C, L = %" ................................................................................................................ 5A
Surge Current, 8.3mSec .
.. ..... .......... ........
........................................................... ..70A
Thermal Resistance @ L - %" ....
...................................................... 20'C/W
Operating and Storage Temperature Range
................... -55'C to +150'C

=

MECHANICAL SPECIFICATIONS
UES1304·1306

~

.1lS"TYP.
2.9mm

BODYB

rn
W

- L..t--t-"lJ'b::d=~--.L-----+---.t_
i
l.toS"TYP.
I

.975" MIN.

24.8mm

I

1

2.7mm

MAX.
r-------.300"7.62mm

1------2.:.~::;'.------'i

4/79 (Rev. 1)

6-92

~UNITRDDE

UES1304-UES1306
ELECTRICAL SPECIFICATIONS

Type

PIV

UES1304
UES130S
UES1306

200V
300V
400V

Maximum
Reverse Current

fREe

Reverse
Recovery

T J =2S'C

TJ = 100'C

@ PIV, T J = 2S'C

T J =100'C

Time·

1.2SV
@3A
tp 300"S

1.15V
@3A
tp 300"S

2O"A

SOOpA

SOnS

=

* Measured in circuit IF- = O.SA, IR = lA,

Maximum

Maximum
Forward Voltage

=

= D.25A

..

Peak Output Current vs.
Lead Temperature

Output Current

vs. Lead Temperature
20

~

-..........

""

g
>-

zUJ

T,

'\

g:

I

L ::::

\

::J

~8"

>-

::J
0-

>-

::J

0

\

'"""
UJ

0-

I

\

o
50
TL -

75

100

12

()

\
25

16

125

>

150

LEAD TEMPERATURE ('C)

llO

70

T, - LEAD TEMPERATURE ('C)

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage

rf

10K

100

I

:!

0

>-

z
UJ

a:
a:

:::>

,

1

()

o
a:

~
a:
oLL
_~

0 1

I

~

I'~'I
IJ

J....

a: 100-'
a:
I

:::>

tr ~':{~~/lCJ
,1/.§

w

'"ffi

100'C

I

tJ

III If!

V

125"C

UJ

I

10

iiia:
-~

V

00 1
0002040608101214161.82

....

0

1

V, - FORWARD VOLTAGE IV)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

...

Z

01

V

K

I-

20

V. -

6-93

40

l-

60

n
I

80

100 120

140

160

180

REVERSE VOLTAGE (% OF PIV)

PRINTED IN U.S.A.

UES1304-UES1306

Output Current vs
Ambient Temperature
3

I~r--.

3: 2.5

II:
II:

:;,
(,J

1.5

II.

0

I

o
25

f'-,

80

'" r-....

~

""''~" 40
...o

1"

~

'1'20

T. MOUNT
@L.enath= ..•·

'fi::::
I

t-

pr,nj CIrcUIt

1\

.5

1"-

"'60

\

:;,

_0

"Z

"l\. "\

....

zL&J

....
....
:;,

Multiple Surge Current VS. Duration
100

I

5

2

\

10 20

50

100 200

500 1000

CYCLES AT 60 Hz SINE WAVE

50
7S
100
125
150
TA - AMBIENT TEMPERATURE ("C)

Reverse-Recovery Circuit
50ll

10 \I

+

-=-=-

25 Vdc

(APPROX.)

III

NOTE]

OSCILLOSCOPE

NOTEI

=

NOTES.

1. Oscilloscope: Rise time", 3n5; Input impedance = SOIl.
2. Pulse Generator: Rise time ~ 8ns; source impedance 100.
3. Current viewing resistor, non.inductive, coaxial recommended.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

6·94

PRINTED IN U.S.A.

RECTIFIERS

UES1401-UES1404

High Efficiency, 8A

FEATURES

DESCRIPTION

•
•
•
•
•
•

The UES1401 Series, in a plastic package
similar to the TO·220, is specifically
designed for operation in power switching
circuits to frequencies in excess of
100kHz. The very low forward voltage and
very fast recovery time make them
particularly suited for switching type
power supplies.

Very Low Forward Voltage
Very Fast Recovery Times
Economical, Convenient Plastic Package
Low Thermal Resistance
Mechanically Rugged
PIV up to 200V

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES1401 .................................................. 50V
Peak Inverse Voltage, UES1402 ................................................. 100V
Peak Inverse Voltage, UES1403 ................................................. 150V
Peak Inverse Voltage, UES1404 ................................................. 200V
Maximum Average D.C. Output Current
@Te= 125°C (Note 1) .................... 8.0A
@TA= 25°C .............................. 3.0A
@ T A = 25°C (Note 2) ..................... 8.0A
Non·Repetitive Sinusoidal Surge Current, 8.3ms .................................. 80A
Thermal Resistance, Junction to Case, OJ-C ................................... 2.5°C/W
Thermal Resistance, Junction to Ambient, OJ-A •••••••••••••••••••••••••••••••• 60°C/W
Operating and Storage Temperature Range ........................... -55°C to +150°C
Note 1. Above lOO°C use the tab for electrical connection.
Note 2. Using Wakefield Type 295 heatsink with convection cooling. For more definitive
data refer to the Output Current vs. Temperature Curves on this datasheet.

MECHANICAL SPECIFICATIONS
UESI401-1404

SEATING
PLANE

T0220AC

INCHES
A
B

--.l

"I 'f ~

jJ

D

I~'I-L PIN 1. Cathode
2. Anode
G Tab is connected
to Cathode.
N

11182

to--

C
D
F
G
H
J
K

l
N

R
S
T

MI.
0560
0380
0140
0020
0139
0090

-

0.015
0.500
0045
0190
0100
0080
0045
0230

MILLIMETERS
MAX
MA.
MIN
0625 1423 1587
0420 966 1066
482
0190 356
114
0045 D51
0.147
3531 3733
279
0110
229
0250
635
0025
038
064
0562 1270 1427
177
0070 114
0210 483
533
2.54
304
0120
204
292
0115
139
0055 114
0270 585
6.85

6-95

-

~UNITRDDE

UES1401 UES1402 UES1403 UES1404
ELECTRICAL SPECIFICATIONS

Maximum
Forward Voltage
@

Type

PIV

UES1401
UES1402
UES1403
UES1404

50V
100V
150V
200V

TJ

·Measured in circuit I,

=25·C

0.9V@4A
0.975 @ SA
. tp = 300JlS

TJ

Maximum
Reverse Current
@PIV

= 100·C

0.SV@4A
0.S95 @ SA

TJ

=25·C

TJ

= 100·C

Maximum
Reverse
Recovery
Time*

Typical
Forward
Recovery
Voltage
@ lA
t, =Sns

35ns

1.4V

150JlA
150JlA
150JlA
500JlA

5JlA

=O.5A, IR = l.OA, IREe =O.2SA

Output Current
vs Temperature

Peak Output Current vs
Case Temperature
26

g

10 f - - I - - I -

22

f-

t5

'"'"

$

:::l
U
f:::l

I-

Z

0..

"''"

f:::l

I

0..

'"c.>

18

14

0

:::l

~

'"

10

1

6

140

OL-_L-_L-_L-_L-_L-~

o

25

50
75
100
125
TEMPERATURE ('C)

150

Tc - CASE TEMPERATURE ('C)

Typical Forward Current
vs Forward Voltage
100

.01

50

.02

W?rA/

10

$
I-

Z

'"c.>

::>

I

-~

.5
.2
.1
.05

.01

.1
.2

~./II

1

f-+-+,-ItI1J

/0...'"

/1

J..'

I

~~

I-t"lt
J

l-

..

UJ

0:
0:

V

:::J

I

10

_" 20

+-H-++-1

III1

r-

r~ U

I-

~

lJ:1!1

1000

~

TJ _+12S'C

120

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.01.11.21.3
V,-VOLTAGE(V)

TJ _ +75'C

200

100

I

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1.064

I-

!;;

e-:~/~f{J,~+-t--H-+""
II

.02

J,.o1
TJ=j'C

20

"''"

Typical Reverse Current
vs Voltage

i II I I

100

eo

60

40

20

VOLTAGE IN % OF PIV

6-96

PRINTED IN U.S.A.

UES1401 UES1402 UES1403 UES1404

Multiple Surge Current vs Duration

Forward Pulse Current ys Duration
10,000
5,000
1,000

i£

r--. r---.

I

I
!
~

I

";::z

Duration for Non-Repetitive Pulse

...........

500

>-

W

0:

w

I

Peak Half Sine Current vs.

Z

~
u

100

. . . r-- r--.

100

80

«
0:

"

60

w

"OJ
0:

"-.....

40

(fl

"

~

"~

u.

r-

0

50

20

'#

(fl

..J

OJ

Q.

---

10

.5
1ps

50

lOps

1ps

1 2
lOOps

1ms

lOms

10

20

50

100 200

500 1000

CYCLES AT 60 Hz SINE WAVE

PULSE DURATION

Thermal Impedance
vs Pulse Width

Reverse-Recovery Circuit
500

100

2.5

1.0

V ....

.5

j

.05

+

1--'1--' l-

:::::

25Vdc
(APPROX.)
10
NOTE 3

i-"

.25

.1

....

OSCILLOSCOPE
NOTE 1

""V
/~

.01.02 .05.1 .2

.5 1 2

5 10 20 50100200

NOTES:
1. Oscilloscope: Rise time :S 3n5; input impedance = 500.
2. Pulse Generator: Rise time S 8ns; source impedance lOn .
3. Current viewing resistor. non-inductive. coaxial recommended.

1000

t, - PULSE WIDTH (ms)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-97

PRINTED IN U.S.A.

•

RECTIFIERS

UES1501
UES1502
UES1503
UES1504

High Efficiency, 16A

FEATURES
•
•
•
•
•

DESCRIPTION
The UES1500 Series, in the economical,

Very Low Forward Voltage
Very Fast Recovery Times
Economical, Convenient TO-220 Package
Low Thermal Resistance
Mechanically Rugged

convenient TO·220 package, is specifically
designed for operation in power switchi ng
. circuits to frequencies in excess of
100kHz. The very low forward voltage and
very fast recovery time make them
particularly suited for switching type
power supplies.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES150l ................................................. 50V
Peak Inverse Voltage, UES1502 ................................................ lOOV
Peak Inverse Voltage, UES1503 ................................................ 150V
Peak Inverse Voltage, UES1504 ................................................ 200V
Maximum Average D.C. Output Current
@Tc = 100°C ........................... 16A
@ T. = 25°C ........................... 3.3A
@ T. = 25°C (Note 1) ................. lO.OA
Non·Repetitive Sinusoidal Surge Current, 8.3ms ................................. 300A
Thermal Resistance, Junction to Case, 8...., .................................. 1.5°C/W
Thermal Resistance, Junction to Ambient, 8J-. • •••••••••••••••••••••••••••••• 60°C/W
Operating and Storage Temperature ................................ -55°C to +150°C
Nota: 1. Using Wakefield Type 295 heatsink with convection cooling. For more definitive data refer
to the Output Current vs Temperature Curve on this data sheet.

MECHANICAL SPECIFICATIONS
UES1501-UESl504

•

A

b

B
C

0

D~i

H

r~

H

J

SECTA·A

~J

K

jJ ~

8..:.1: I--GL

1

o

I

N ......

3/83

F
G

PIN 1. Calhode
PIN 2. Anode
Tab is connecled
to Cathode.

L
N

R
S
T

TO-220AC

INCHES
MILLIMETERS
MIN
MAX
IIIN
0560 0625 14.23 1587
0380 0420 9.66 1066
0140 0.190 356
482
0020 0045 051
114
0139 0.147 3.531 3733
0090 0110 22.
27.
0250
635
0015 0025 038
064
0500 0562 1270 1427
0045 0070 114
177
0190 0210 483
533
0100 0120 254
304
0080 0115 204
292
139 .
0045 0.055 114
0230 0270 585
685

""

6-98

~UNITRDDE

UES1501

UES1502

UES1503

UES1504

ELECTRICAL SPECIFICATIONS
Maximum
Forward Voltage
Type

PIV

=25·C

TJ
50V
lOOV
150V
200V

UES1501
UES1502
UES1503
UES1504

TJ

= lOO·C

.975V@ 16A

.S95V @ 16A

!.lOV @ 32A

l.OV @ 32A

TJ

Recovery
Time·

=25·C

TJ = lOO·C
SOOpA

lOpA

50

'/v

~~ i

16
I-

zOJ

cr
cr

:J

14

20

G:

"/

+150C>C

12

g

U

Gl

I-

+125°C

10

Z

10

+100·e
+25·e
-50·e

-

OJ

tl

:J
U

OJ

I
-"

cr

.
..
'"cr

h~ / I

>

I
-"

0.5

.3

.4

Typical Reverse Current vs Voltage

~

z

200

/'

cr
cr
:J
u

100
50

/'

IOJ

-

A

lZS·C"",,-

J

OJ

cr

.6

.7

.8

.9

Square Pulse

Current vs Duration
for Non-Repetitive

"",Pulse

g 1,000

~

I-

~

cr
cr
::>

.......... 1"-,

500

u

1"-

~

5

-

.!!i

0.2
0.1

1...........

OJ

10

0.5

1.0 l.l 1.2

VOLTAGE (V)

I"-f".-

~f-'"



'l.f>

0..

100
50

100

10

120

.lpS

.5

50
IpS

lOOpS

1m.

lOms

% OF PIV
PULSE DURATION

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6·99

PRINTED IN !-l.S A

UES1501
Multiple Surp Current vs Duration
100

80

"z~

...a:

\

~

60

l;'!

:0

...'"0

40

'\

V$

Pulse Width

2.5

:i
d

~

...e..-u

r-

z

~

~

ill

0.5

'"a:

0.25

...
'":I:

~I-

f-f-

VI-"

V

l-

I

.:t"
50 100 200

I..-

::;;

"r--t-

20

10 20

I-'"

1.0

«
Cl

oF.

1 2

UES1502 UES1503 UES1504

Thermal Impedance

l./

0.1

II

V

.05
.01 02 .05.1 .2

500 1000

CYCLES AT 60 Hz SINE WAVE

.5 1 2
tp

-

5 10 20 50 100200 1000

PULSE WIDTH (ms)

Reverse·Recovery Circuit
lOll

501l

+
-

:::

25Vdc

(APPROX.)

III

NOTE 3

OSCILLOSCOPE
NOTE 1

NOTES:
1. Oscilloscope: Rise time $ 3ns; input impedance = 500.
2. Pulse Generator: Rise time S 8ns; source impedance IOn.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6·100

PRINTED IN U.S.A.

RECTIFIERS

UES2401-UES2404

High Efficiency, 16A Center-Tap

FEATURES

DESCRIPTION

• Very Low Forward Voltage
• Very Fast Recovery Times
• Economical, Convenient TO·220AB
Package
• Low Thermal Resistance
• Mechanically Rugged
• PIV up to 200V

The UES2401 Series in the economical,
convenient TO·220AB package, is
specifically designed for operation in
power switching circuits to frequencies in
excess of 100kHz. The series combines
two high efficiency devices into one
package, simplifying installation, reducing
heatsink requirements and the need to
purchase matched components.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES2401 .................................................. 50V
Peak Inverse Voltage, UES2402 ................................................. lOOV
Peak Inverse Voltage, UES2403 ................................................. 150V
Peak Inverse Voltage, UES2404 ................................................. 200V
Maximum Average D.C. Output Current
@ Te = 125°C (Note 1) .................... 16A
@ T. =25°C ............................... 3A
@ T. = 25°C (Note 2) ..................... lOA
Non·Repetitive Sinusoidal Surge Current, 8.3ms .................................. 80A
Thermal Resistance, Junction to Case, 8J -e ................................. 1.75°C/W
Thermal Resistance, Junction to Ambient, 8J-' ................................ 60°C/W
Operating and Storage Temperature Range ........................... -55°C to +150°C

Note 1. Above 8A use the tab for electrical connection.
Note 2. Using Wakefield Type 295 heatsink with convection cooling. For more definitive
data refer to the Output Current vs. Temperature Curves on this datasheet.

MECHANICAL SPECIFICATIONS
UES2401·2404

SEATING
PLANE

A
B

C

-

I'~
Pin 1

D

i
Pin 2
&
Tab

14.

Pin3

F
G
H
J
K
L
N
Q

R
S
T

11/82

INCHES
MI.
MAX
0560 0625
0380 0420
0140 0190
0020 0045
0139 0147
0090 0110
0250
0015 0025
0500 0562
0045 0070
0190 0210
0100 0120
0080 0115
0045 0055
0230 0270

-

6·101

TO·220AB

MILLIMETERS
MI.
MAX
1423 1587
966 10.66
482
356
051
II.
3531 3.733
229
279
635
038
06.
12.70 1427
II.
177
483
533
25.
304
20.
292
II.
139
685
585

~UNITRODE

..

UES2401 UES2402 UES2403 UES2404
ELECTRICAL SPECIFICATIONS

Maximum
Forward Voltage
@

Type

PIV

UES2401
UES2402
UES2403
UES2404

50V
lOOV
150V
200V

TJ

:..

=25°C

0.9V@4A
0.975@ BA
tp =300ps

TJ

Maximum
Reverse Current
@PIV

= lOO°C

= 25°C

TJ

0.BV@4A
0.B95@ BA

TJ

= 100°C

Maximum
Reverse
Recovery
Time*

Typical
Forward
Recovery
Voltage
@lA
t, =Bns

35ns

1.4V

150pA
150pA
150/lA
500/lA

5pA

·Measured in circuit IF = O.5A, I. = l.OA, IREe = O.25A

Output Current
vs Temperature

Peak Output Current vs
Case Temperature

18
16

.

~

14

Z

12

::>

10

I

8

'"a:a:

!Z
~

'":::J
'"~

14r-----t-~~r-~~~~~~_4~

!:io

(.)
-~

18~~~t-~~~~~r-~--t-\---1

~ 10~----+-----~--~r_~~~~~
I

1

6 ~----+_----~----r_--~t-'I~++l

110

120

130

140

150

T, - CASE TEMPERATURE (oC)

Typical Forward Current
vs Forward Voltage
100
50

i.dI~ ~ ....

20
10

..

~

"'
(.)

I

-~

.5
.2

.1

.01

=-'SOOC

.1

~

...
z

r<~ ~iJ
//

I

I

y..

5:p

1/

II

10.....

'r--

l-J--2S
J- c.
o

-

UJ

0:
0:

...... V

:0

'I

CJ

'r--j ,-'

I

.2

/1/

oCJ

y..

IIAJ I I

.02

r-~
~
~II
1-IS

.05
.02

..

~ I/V'

A

z

a:
a:
::>

~

Typical Reverse Current
vs Voltage

10
_"" 20 I-

I

...'

100

I

200

ill

I
.01
.1 .2 .3 .4 .5 .6 .7 .8 .9 1.01.11.21.3

1000

~

(f
120

~JlrIc

I' 1~10r~
T

-

~

=+125°C

( I I I I
100
80
60
40
20
VOLTAGE IN % OF PIV

VF-VOLTAGE(V)

UNITRODE CORPORATION ° 5 FORBES ROAD
LEXINGTON, MA 02173 ° TEL. (617) 861-6540
TWX (710) 326·6509 ° TELEX 95·1064

6·102

PRINTED IN U.S.A.

UES2401 UES2402 UES2403 UES2404

Multiple Surge Current vs Duration

Forward Pulse Current vs Duration
10,000

i'-.... t-- ~
1,000
5:

r

I I

5,000

I

II::

100

o

«
II::

"'"

r---... t-- r--.....

Z

"'
!5

";::z

I Peak Half Sine cu;re-;ft vs,
Duration for Non-Repetitive Pulse

I"'--...

500

I-

r
1

100

"'" i'....

60

"'

l'..

"'~

II::

::>

'"....

40

-r-.-

~

0

so

"''"
:::>

80

#

20

...J
Q,

10

,5

.lps

5

1 2

50

10,.,5

lps

lOOps

1mo

10 20

50 100 200

500 1000

CYCLES AT 60 Hz SINE WAVE

lOms

PULSE DURATION

Reverse-Recovery Circuit

Thermal Impedance
vs Pulse Width
_

~

I,..oj....-j...
1.0

"''-'
~

.4

/

,2

.1

i!:
I

J

.04

VV +"'"

+
::::

~io""

-'
«

~

Ion

2,0

E
~
~

son

25Vdc
(APPROX.)

In

V

NOTE 3

V

OSCI LLOSCOPE
NOTE 1

=NOTES:

,02
•01.02 .05.1.2

.5 1 2

1. Oscilloscope: Rise time :5 3n5; input impedance = 500.
2. Pulse Generator: Rise time :5 8ns; source Impedance lOn .

5 10 20 50100200 1000

3. Current Viewing resistor, non-inductive, coaxial recommended.

t, - PULSE WIDTH (mo)

UNITRODE CORPORATION' 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-103

PRINTED IN U.S.A.

II

RECTIFIERS

UES2601-U ES2603

High Efficiency, 30A Center-Tap

FEATURES
• Very Low Forward Voltage
• Very Fast Switching Speed
• Convenient Package
• High Surge
• Low Thermal Resistance
• Mechanically Rugged
• Both Polarities Available

DESCRIPTION
This series combines two high efficiency
devices into one package, simplifying
installation, reducing heat sink requirements and the need to purchase
matched components.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES2601
Peak Inverse Voltage, UES2602
Peak Inverse Voltage, UES2603 .
100'C .
Maximum Average D.C. Output Current at Tc
Non-Repetitive Sinusoidal Surge Current 8.3 ms
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range ........ .

.......... SOV
.......... looV
.. .... lSOV
.. ..... 30A
........ 4ooA

=

....... l'C/W

-55'C to +175'C

POWER CYCLING
These devices possess the unique ability to pass many
thous,mds of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL SPECIFICATIONS

•

POSITIVE OUTPUT

~

I

14

• •

NEGATIVE OUT!"UT

'4 1~, •

CASE

CASE

F

~iJE

UES2601-UES2603

A
B

M
ANODE 1

G
I

~.t..H

I

I

i"

J-~

C D

7

ANODE 2

C
D

E
F

G

L

H

J
K
L
M

ins.
.875 MAX.
. 135 MAX.
.250-.450
.312 MIN.
.038-.043 DIA.
. 188 MAX. RAD.
1.177-1.197
655- 675
.205-.225
.420-.440
.525 MAX. RAD.
.151-.161 DIA.

TO-204AA (TO-3)

mm.
22.23 MAX .
3.43 MAX .
6.35-1143
7.92 MIN .
0.97-1.09 DIA.
4.78 MAX. RAD .
29.90-30.40
16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAD .
3.84-4.09 DIA.

Not.:
Standard polarity is positive output.
For reverse polarity (negative output) add suffix uR", ie. UES2601R.

6-104

~UNITRDDE

UES2601- UES2603

ELECTRICAL SPECIFICATIONS
Type

PIV

UES2601
UES2602
UES2603

SOV
lOOV
150V

* Measured in circuit 'F = O.SA, 'R =

Maximum

Maximum

Forward Voltage

Reverse Current

@

@

Tc = 2S·C

Tc = 12S·C

.930V

.825V

@

tp

lA, 'REe

15A
300I'S

=

:>

20

4mA

35nS

= O.25A

Peak Output Current vs.
case Temperature

50

,---.,-....----r.......--,--,r--,.,...--.,

os 40

t---"'ot-----p.~=~---\~H-_t

I-

15

a'"'"

~

u

I-

:>
0..

I-

:>
0

2OI'A

=

~

IZ

W

0:

Time·

I-

~
a:

Tc= 12S·C

15A
300I'S

Output Current vs.
Case Temperature
30

Reverse
Recovery

Tc = 25°C

@
tp

Maximum

10

:>
"-

I-

;:)

~ 20 t - - - i -

.'\

I
_0

100
Tc -

30t---+----p~-~~~_\r-t__t

I-

~
J

10 i---t----+---t---t-'I['IH---t

12S
150
175
CASE TEMPERATURE (·C)

Tc - CASE TEMPERATURE (·C)

Forward Current
vs. Forward Voltage
50

TJ = +150·C
30

~
I-

z
w

/V
10

V

a:
a:

J

::>
u

II

c

a:

II

...
I

-"

.5

.2

I

I-TJ - +75'C
I- TJ = +12S·C

,1

z

.05
.1
:> .2
u

UJ

a:
a:

w
a:
w

'"
~
a:

- - - TYPICAL VF
- - - - = MAXIMUM V

--

I

.8
1.0
FORWARD VOLTAGE (V)

.6

V, -

.5
12

10
20
50

1.2

l - I--

r- :::Tr=
J

"..

I

'/
.4

J

I-

~

/1

/

II

fZ

t::::

I

....l--±:
T -+2S·C

.005
4: .01
oS .02

/

J

~

a:

0

Ii"

~
..-

\.

20

Typical Reverse Current
vs. Reverse Voltage
.001
.002

li

II

11

+l00·C

TJ =+125·C

""" -T

J

f-

I

__ V.1

= +150·C

.iL .L

130 120 110 100 90 80 70 60 50 40 30 20 10
V, - REVERSE VOLTAGE (% OF PIV)

UNITRODE CORPORATION· 5 FORBES ROAD
LEX INGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 9S·1064

6·105

PRINTED IN U.S.A.

II

UES2601- UES2603

Maximum Forward Surge
vs. Number of Cycles
400

~

300

t

~

'"
":;'"

IV\..

1/

«

~

II:
uJ

J:
l-

"'- . . . .1'---..

I

....~

-

~ICYC1E

N-

V

.1

...J

:;

50
100
10
20
CYCLES OF 60 Hz SINEWAVE

/

.2

Q.

'"

I

V/

«

~

200

100

i.,.-V 1-1-

.5

u

\oJ

-~

Thermal Impedance
vs. Pulse Width
1.0

z

l;:

a'"'"

~
-.

.05

V

.02
.01

.01.02 .05.1 .2
tp -

.5 1 2 5 10 20 50100200
PULSE WIDTH (mS)

1000

200

Reverse-Recovery Circuit

Ion

SOP.

+
_
-=-

25Vdc
(APPROX.)

III

NOTE 3

OSCILLOSCOPE

NOTE 1

NOTES:
1. Oscilloscope: Rise time ~ 3nsj input impedance 500.
2. Pulse Generator: Rise time ~ 8ns; source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

=

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-106

PRINTED IN U.S.A.

UES2604-U ES2606

RECTIFIERS
High Efficiency, 30A Center-Tap

FEATURES
• Very Low Forward Voltage (1.15V)
• Very Fast Recovery Times (50nSec)
• Low Profile Package
• High Surge Capability
• Low Thermal Resistance
• Mechanically Rugged
• Both Polarities Available

OESCRIPTION
The UES2604 series is specifically
designed for operation in power switching
circuits operating at frequencies of at
least 20 KHz.
This series combines two high efficiency
devices into one package, simplifying
installation, reducing heat sink requirements and the need to purchase
matched components.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES2604 ................................................................................................. 200V
Peak Inverse Voltage, UES2605 ................................................................................................... 300V
Peak Inverse Voltage, UES2606 .................................................................................................400V
Maximum Average D.C. Output Current @ Tc 100'C ......................
.... 30A
Surge Current, 8.3mSec ................................................................................................................ 300A
Thermal Resistance, Junction to Case ....................................
.. ...... 1'C/W
Operating and Storage Temperature Range ............................................... -55'C to +150'C

=

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

MECHANICAL SPECIFICATIONS

•

POSITIVE OUTPUT

.1

I

14

• •

NEGATIVE OUTPUT

''II·'

CASE

CASE

F

H
J

A
B

M

I ~.J:1
~WE I'
C D

UES2604-U ES2606

•

e

J~~

"I<

ANOOE 1

ANODE 2

L

C
0
E
F
G
H
J
K
L

M

Ins.
.875 MAX.
135 MAX
250-.450
.312 MIN.
.038-.043 OIA.
. 188 MAX. RAO
1.177-1.197
.655- 675
205-.225
.420- 440
525 MAX RAO
151 161DIA.

TO-204AA (TO·3)

mm.
22.23 MAX.
3.43 MAX.
635-11.43
7.92 MIN .
0.97-1.09 OIA.
4.78 MAX. RAO .
29.90 30.40
16.64-17.15
521-5.72
10.67-11.18
13 34 MAX. RAD.
3.84-4.09 DIA.

Note:
Standard polarity is positive output.
For reverse polarity (negative output) add suffix URn, ie. UES2604R.

4/79 (Rev. 1)

6-107

~UNITRDDE

•

UES2604·UES2606
ELECTRICAL SPECIFICATIONS, PER LEG
Type

Maximum
Forward Voltage

PIV

UES2604
UES2605
UES2606

200V
300V
400V

"'Measured in circuit

Tc = 12S'C

Tc =2S'C

Tc = 12S'C

Time*

1.25V
@ l5A
tp =3001'5

1.15V
@15A
tp -;; 3001'5

5OI'A

lOmA

50nS

= .5A,IR =lA, I REC = .25A

IF

t:::::--..

3D

Reverse
Recovery

Tc= 2S'C

Peak Output Current vs.
Case Temperature

Output Current vs.
Case Temperature

~

Maximum

Maximum
Reverse Current

t-

~

Z

'"0:0:

::> 20

<.>
t-

::>

0..

t-

::> 10
0

I

'"

is

40 ~"""-+-~.-+-'~

....

i!i0:

"\

0:

::J
U

~

....

::J
0..

t:;

~

\

0

20~--+---+---~~~~r-~

.:5
0..

\

.2

I

10~--+---+---+---~l---1

1

100
110
120
130
140
150
Tc - CASE TEMPERATURE ('C)
110

70

130

T, - CASE TEMPERATURE ('C)

Typical Reverse Current
vs. Reverse Voltage

Forward Current
vs. Forward Voltage
lOOK

100
50

;/
~ ~ ?:

g2D
t-

10

~

5

z

/

V/

0:

::>
u
~

1

~ .5

0:

2

.2

I

.1

.05
.02
.01

!

//

~

V II

V
/

/

I

!z
'"a:0:

V

::>
<.>

'"enffi

r--.CJ .CJ .CJ f-.~/
/ v
r- 'f..$ 'f..~ 'f..tIl1- Ilit
II

t-"y'"

I

II

II

II

"/-,,.:'1
Ii

I-J""~

-

If
KIf"
I'

If

V"

I

V

100

10

L- ......

II

125'C

...... /l

1-'id000C

I
..!'

-

2~

/

i-'""

1/
o 10 20 30 40 50 60 70 80 90 100 110 120 130140150

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.11.21.31.41.5
V, - FORWARD VOLTAGE IV)

UNITRODE CORPORATION. 5 FORBE.S ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

-

10K

i;j
a:

1V Y Y
I

I

V, -

6·108

REVERSE VOLTAGE (% OF PIV)

PRINTED IN U.S.A,'

. UES2604·UES2606

Maximum Forward Surge
vs. Number of Cycles

Thermal Impedance

~

1.0

UJ
U

.5

vs. Pulse Width

[.....:- i--i--

P
300

3:
I-

...a:
Z

200

a:

;;)
(J

I

J

100

'" '"

Z

o

,1CiCLE

.1

...J


«

....z
UJ

0:
0:

~= 'Is""'-

:::l

...........
1

:::l

u

UJ

;;:

Ei
UJ

0:
UJ

~ 1

~

I

0:
UJ

;;;

~~

= Vs"

~'"
t:;
---I--...

I

~

.2

L

"

'""" ."""'" ~
.............

25

1 AMP SERIES

~

'i.

UJ

10" NVT
10"
lOIS
10 '4
10 '4
10"
10 '6
lOIS
10 '4
10 '4

Maximum Current
vs Lead Temperature

2 AMP SERIES

L:::: Va"

~
z

....

Maximum
Radiation
Tolerance

100'C

25'C

""
..............

-......-..

_0

25

50
75
100
125
150
175
TL - LEAD TEMPERATURE ('C)

50
TL -

~~

~

~

75
100
125
150
175
LEAD TEMPERATURE ('C)

Allowable Forward Surge vs Number of Cycles
100

"z;::«
0:

80

UJ

'en"
0:
:::l

60

";;:

40

"""

I III

Turret 1" centers
Turret 1/2" centers

~

'-':::

~

UJ

Printed Circuit

r-r-:::::: ::f[

U
UJ
0..

...en

ALL SERIES

20

0

If.
10
100
CYCLES AT 60 Hz HALF SINE WAVE

UNITRDDE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

6·111

1,000

PRINTED IN U.S.A

URI0S-UR20S URllO-UR21O URllS-UR21S UR120-UR220 UR12S-UR22S

Typical Reverse Current vs PlY

:<

.05
.1

I-

.2

3

...z
'"'"
:::l
...
...>'"
...
'"

I

ALL SERIES

.01
.02

Typical Forward Current
vs Forward Voltage
10

~'C

~C

.5

10

2 AMP SERIES

~

V

10
20

75'C

~.05

~
LL.

V

200

~ 125'C

500
1,000

.01

.005

100

II

.001

50

% OF PIV

0:

.2

a:

a

II

~
I-

...a:
Z

1,000

ALL SERIES

~

a: .02

I

/ /

.002

II
.8

1

1.2

1.4

il I
I

I II

.001

.6

VOLTAGE (V)

/ 11

11

2

~

.4

•

V, -

VOLTAGE (V)

1

1.2

1.4

Reverse Pulse Power vs Pulse Duration
100,000

ALL SERIES

Square Pulse Current vs
Duration for Non-Repetitive Pu Ise

(8.3 ms sine wave equivalent
to 3 ms squaret wave)

r--.

~

<.>

(8.3 ms sine wave equivalent
to 3 ms square wave)

F
t--

...
...0...

1,000

...:::l

100

-....

III
...J

100

...:::l

10

Square Pulse Current vs
Duration for Non-Repetitive Pulse

10,000

a:

~

.1~s

II

.005

.4

a:

III
...J

"~KJ5?- t--

F"i-"i-'
1 111 1

o

V, -

:::l

...

:~;tff

.2
.1

.... 01

Forward Pulse Current vs Pulse Duration
10,000

.5

~ .05

II

lL

/

.002

ISO

...

II I I

II

I

!/',; V/
1LL lL

~

!Z

'/..f: ;; "u/;u
jl; ~7-

.1

o'" .02

50
100

~~

lLlLIL

.5

I-

z...

a

0

1 AMP SERIES

VV'I
VII

'"
a: .2

III

Typical Forward Current
vs Forward Voltage

llill

llill

lill

-....

10

bs

lO~s

100",5

Ims

10ms

PULSE DURATION (SECONDS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-112

lOOns

ttlS

10~s
100.u5
Ims
PULSE DURATION (SECONDS)

lOms

PRINTED IN U.S A

USD320C
USD335C
USD345C

DUAL POWER SCHOTTKY RECTIFIERS
60A Pk, 45V

DESCRIPTION
The USD300C series has two Schottky
barriers arranged in a common cathode
configuration and is ideally suited for a
full wave output rectifier in low voltage
switching power supplies.

FEATURES
• Very Low Forward Voltage
• Low Recovered Charge
• Rugged Package Design (TO-3)
• High Efficiency for Low Voltage Supplies
• 45V Blocking @ Rated Tlma,
• 50V Repetitive Surge Voltage
• Dual Schottky Rectifier in a Single Package

ABSOLUTE MAXIMUM RATINGS (Total for USD300C Series)
USD320C
USD335C
USD345C
Average Rectified Forward Current, 10 @ Tc = lOO°C ......................................... 30A ........................ .
ABSOLUTE MAXIMUM RATINGS (Per Diode)
Working Peak Reverse Voltage VRWM' .................................... 20V ............. 35V ............. 45V .... .
DC Blocking Voltage, VR ............................................... 20V ............. 35V ............. 45V .... .
Peak Repetitive Surge Voltage, VRSM @ IRM ..........................•.. 24V ............. 42V ............. 54V .... .
Average Rectified Forward Current, 10 ........................................ 30A in full wave configuration* ......... .
Non-repetitive Peak
Surge current (8.3 mS), IFSM ........................................................ 500A ..................... .
Peak Reverse Transient Current, IRM ..................................................... 2A ...................... .
Storage Temperature Range, T.tg • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • -55°C to +200°C.............. '"
Peak Operating Junction Temperature, T, max' .••.•.•.•.•••••••••••••.••••••••••••.•••••.. 175°C .................... .
Thermal Resistance, Junction to Case,R'Jc ............................................. 1.4°C/W ................... .
• Each Anode Pin Limited to 18A Average.
Package Capability 30A Average

ELECTRICAL CHARACTERISTICS (TeASE =25°C)
Symbol

limit

Units

Maximum Instantaneous
Reverse Current

iR

10
50

mA
mA

Tc =25°C, VR =VRWM
Tc = 125°C
Pulse Width =400jl5
Duty Cycle = 1 percent

Maximum Instantaneous
Forward Voltage

VF

0.57
0.66
0.60

V
V
V

iF = lOA, Tc =25°C
iF = 20A, Tc = 25°C
iF =20A, Tc = 125°C
Pulse Width =300jl5
Duty Cycle =1 percent

Characteristic

Ct

2000

pF

VR =5.0V

dv/dt

1000

v/jl5

VR=VRWM

Capacitance
Voltage Rate of Change

Conditions

MECHANICAL SPECIFICATIONS
NOTE:
Leads may be soldered to within
111," of base provided temperaturetime exposure is less than 260'C
for 10 seconds.

ANODE 2 •

C

A

M

B
ANODE 1

~~~L
I
I'
H
j

G:J

J-~

0

14

I

.ANODE 1

"K

ANOOE 2

L

C
D
E
F
G
H

J
K
L

M

ins.

mm.

875 MAX.
. 135 MAX.
.250-.450
.312 MIN.
.038- 043 DIA.
.188 MAX. RAD.
1.177-1.197
655 .675
.205-.225
.420- 440
525 MAX. RAD
.151-.161 DIA.

22.23 MAX.
3.43 MAX .
6.35-11.43
7.92 MIN.
0.97-1.09 DIA.
4.78 MAX. RAD .
29.90-30.40
16.64-17.15
5.21-5.72
10 67-11.18
1334 MAX RAD
384-4.09 DIA .

Notes: All metal surfaces tin plated.

4/82

USD300C SERIES

TO·204AA (T0·3)

CASE (CATHODEI

F

~ffu[

~I

6-113

~UNITRDDE

III

USD320C USD335C USQ345C

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage

I I

L....

~

I

lJ

-'

0,

JJ

100

,'l."i

lOO

I

1000

III

VV

-

~

~~

-...

If

t:k

V
--6

./

I

7~oC

1/

0.2

~

W~oc

I

II

"

~

() 4

06

08

V

/

I

i-"""

'/

V

~"

"

I [)

V, VDLTAGE(V)

01

o

20

40

60

80

100 120

% OfVR

V".... Rating vs. Case Temperature
50
45

1

Ur D34 C

35

USD335C

'20

USD320C

n
-50

25

50

75

100

125 ISO 175

Case Temperature eC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 86H540
TWX (710) 326-6509 • TELEX 95-1064

6-114

PRINTED IN U.S.A.

POWER SCHOTTKY RECTIFIERS

USD520
USD535
USD545
USD550

150 Amp Pk, Up to 45V

FEATURES

DESCRIPTION

•
•
•
•
•
•
•
•

This series of Schottky barrier power
rectifiers is ideally suited for output
rectifiers and catch diodes in low
voltage power supplies. The Unitrode
high conductivity design, using a heavy
copper top post and 4 point crimp,
ensures cool thermal operation and low
dynamic impedance. Rugged design
absorbs stress that can damage glass-tometal seal during installation and use.

Very Low Forward Voltage (O.6V at 60A, 125°C)
Low Recovered Charge
Rugged Package Design (00·5)
High Efficiency for Low Voltage Supplies
Low Thermal Resistance (0.8°C/W)
High Surge Current (1000A)
Low Reverse Current «50mA at rated VR at 125°C)
Available with Flexible Top Lead

ABSOLUTE MAXIMUM RATINGS
USD520

USD550

USD545

USD535

Working Peak Reverse Voltage, VRWM .................. 20V ........... 35V ........... 45V ........... 50V
DC Blocking Voltage, VR .............................. 20V ........... 35V ........... 45V ........... 50V
Peak Repetitive Surge Voltage, VRSM @ IRM ............. 24V ........... 42V ........... 54V ........... 60V
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz,
50 percent Duty Cycle), IFRM ................................................... I50A (at Te 115°C)
Average Rectified Forward Current, IFIAV) ............................................. 75A (at Te = 115°C)
Non-repetitive Peak Surge Current (8.3mS), IFSM .........................................•...... , I000A
Peak Reverse Transient Current, IRM ................................................................. 2A
Storage Temperature Range, Tst. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +200'C
Operating Junction Temperature, TJ ............................................................ +175°C
Thermal Resistance Junction-to-Case, RB JC ••• _ ••••••••••••••••••• _ ••• _ ••••••••••••• _ ••••••• , •• 0.8°C/W

=

MECHANICAL SPECIFICATIONS

,...
0

B

.""~

A

.225 z 005

0
E

.060 MIN.
.156 ± .020
156 MIN FLAT
.66701A MAX
.090 MAX
.677 ± .010

.375 MAX
140 MIN. DIA
K 1.000 MAX.
L
450 MAlt

M

.438'" .015

N

078 MAX.

USD520
USD535
USD545
USD550

DO-5

5.72:t 0.13
1.52 MIN.

3.96'" 0.51
3.96 MIN FLAT
1694 OIA MAX

2.29 MAX .
17 20 ... 0.25
9.53 MAX .
3.56 MIN. OIA

2540 MAlt
11 43 MAX.
11.13::!: 0.38
1.98 MAX.

Notes:
1. Cathode is stud.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud tOrque: 30 inch pounds (35 kg. em).
4. Angular orientation of terminal is undefined.

6-115
4/82

~UNITRDDE

..

USD520·USD535 USD545 USD550

ELECTRICAL CHARACTERISTICS (TCASE = 25°C)
Characteristic

Symbol

Limit
USD550

20
(50)

20
(75)

Maximum Instantaneous
Reverse Current

iF

Maximum Instantaneous
Forward Voltage

VF

0.50
0.68
0.60

Flexible Top Lead Option

VF

(0.63)

V

Maximum Capacitance

CI

4000

pF

dvldt

1000

VipS

Maximum Voltage
Rate of Change

Conditions

Units

USD545

VR = VRWM
(Tc = 125°C)
Pulse Width = 300ps,
Duty Cycle = 1 percent

mA

iF = 1OA, Tc
iF =60A, Tc
iF =60A, Tc

=25°C
=25°C
=25°C
iF =60A, (Tc = 125°C)
VR = 5.0V
VR = rated

V
V
V

Typical Forward Current
vs Forward Voltage

Typical Reverse Current
vs Reverse Voltage
1000

.~

100

~

a''0:""i

10

0:

::>

17 'C- ~

~12,,'C

0:

1-75 C I

~

-

<,100

V//

g

!Zw

r=:=: 150'

'-'
0

::;.--

I

~lO.O

A":--55'C

~

~

J.

1

I

.1

a

l.0

0.1
.2

.3

.4

.5

.6

.7

.8

.9

l.0

125'C

/

-

~

0:

lSO'C

-

0:
0:

25'C

,/

a

75'C

I

V,-FORWARO VOLTAGE (V)

V

~l~2r;,oC

m

10

-

175'C

I

I

~

~

so

00

m

50

50

~

V,-REVERSE VOLTAGE (% 01 VON.)

Maximum Current
vs Case Temperature
150

" " '\.
\ r\.

"'~

~5 120

!:: ....

.... z

0:
"''''
'" 0:
Q.

0: :J

-= uc
«
'"
Q. 0:
«

50

-

I;:
~

0:.
~o

-

40

\

50% DUTY
SQUARE WAVE
1 20 KHz

=

\
\

100

\

1\

...

125

=0

\

~

t-- v, = RATED

v,

\
150

\

\
175

Tc-CASE TEMPERATURE ('C)

UNITRODE CORPORATION. 5 ~ORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6~
TWX (710) 326·6509 • TELEX 95-1064

PRINTED IN U.S.A.

USD520

USD535

USD545

USD550

VR/MAXI Rating vs

Case Temperature
60
50
USi550
45
USr45
40
35

~

•

USD535

30

Vl

:;
0

>
I

25

::
20

us

520

~

15
10

-50

o

-25

25

50

75

100

125

150

175

CASE TEMPERATURE ('C)

MECHANICAL SPECIFICATIONS
USD520F
USD535F
USD545F
USD550F

FLEXIBLE TOP LEAD (OPTIONAL)
Add an "F" Suffix to Part Number.

Standard JEDEC
DO-5 Package

@

I~TMl
~

N

08 FI."bl. I

R

iEbl

C.ble7x95/36~

.Shrmkable

Sleevmg

l- Q

I

P

jls

M
N
P
Q
R
S
T

INCHES
.718 MAX.
4.50 t .250
.525 MAX.
675 t .035
.205 t 005
075 t .010
1.125 MAX

00·5 with Flexible Lead

MILLIMETERS
18.24 MAX
114.3 t 6.35
13.23 MAX.
17.15 t 0.89
5.21 t 0.13
1.91 t 0.25
28.58 MAX.

Covers

Lead

*To 125°C (Ambient)

Note: Consult Factory for Non-standard Lead Lengths.

'UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

PRINTED IN U.S.A.

6·117

POWER SCHOTTKY RECTIFIERS

USD545HR2

150A Pk, 45V

FEATURES

DESCRIPTION

•
•
•
•
•
•
•
•
•

The USD545 Schottky barrier power
rectifier is ideally suited for output rectifiers
and catch diodes in low voltage power
supplies. Unitrode semiconductors are
inherently high·reliability devices; however,
for those users who want the ultimate
assurance of reliability, we offer the
USD545 Schottky with 100% HR·SH
screening as described elsewhere within
this data sheet.

Very Low Forward (0.6V at 75A, 125°C)
High Reverse Surge Voltage (60V)
Low Recovered Charge
Rugged Package Design (DO-5)
High Efficiency for Low Voltage Supplies
Low Thermal Resistance (0.8° CIW)
High Surge Current (lOOOA)
Low Reverse Current «50mA at rated VRat 125°C)
High Reliability Screening

ABSOLUTE MAXIMUM RATINGS
Working Peak Reverse Voltage VWN ... ••••••••••••••••••••••••••••••••••••••••••••• 45V
DC Blocking Voltage, VR ...................................•..................... 45V
Peak Repetitive Transient Voltage, VRSM ........................................... 60V
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz,
50 percent Duty Cycle), IFR.................................. 150A (at Tc = 115°C)
Average Rectified Forward Current, IFIAVI .......................... 75A (at Tc = 115°C)
Non·repetitive Peak Surge Current (8.3mS), I FS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A
Peak Reverse Surge Current, IRo. ••.••.•••.••..•.••••••.•.••.••.••••.•••••.••.•..•• 2A
Storage Temperature Range, TsI••.••.•...•.....••.•..•••..•.•••..•.• -55°C to +200°C
Operating Junction Temperature, Tj • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • +175°C
Thermal Resistance Junction-to·Case, R9JC ••••••••••••••••••••••••••••••••••• 0.8°C/W

MECHANICAL SPECIFICATIONS
USD545HR2

B

~

00-5

Ins.

0

225:t 005

'CC"~

\'4·28

UNF·2A

060 MIN

C
0
E

156'" 020
156 MIN FLAT

572:!: 013
152 MIN.
3 96::!:: 0 51

090 MAX

396 MIN FLAT
16940lA MAX
229MAX

677

1720+025

66701A MAX
+

010

.375 MAX
140 MIN OIA

K 1000 MAX
L
450 MAx
438:t 015
078 MAX

953 MAX.

356 MIN DIA
25.40 MAX
11 43 MAX
1113'" 0 38
1 98 MAX

Nates,
Cathode is stud.
All meta' surfaces tin plated.
Maximum unlubrlcated stud torque: 30 inch pounds (35 kg. cm).

1.
2.
3.
4.

Angular orientation of terminal is undefined.

OJ]
4/82

6-118

_UNITRDDE

USD545HR2
ELECTRICAL CHARACTERISTICS

=2S·C)

(TCASE

Symbol

Characteristic

Maximum Instantaneous
Reverse Cu rre nt

IR

Maximum Instantaneous
Forward Current

VF

Conditions

mA

VR=45V
Tc = 25·C
Tc = 125·C
Tc = 150·C
Pulse Width = 3OOl'S
Duty Cycle = 1 percent

V

IF = 75A
Tc = 25·C
Tc = 125·C
Tc = 150·C
Pulse Width = 3OOl'S
Duty Cycle = 1 percent
VR =5V

0.70
0.60
0.55

Capacitance

(1)

Units

10
50
175

Voltage Rate of Change
Reverse Energy

Max.

C,

4000

pF

dvldt

1000

VII'S

2

ER

III

VR = 45V
Duty Cycle

A

~

1 percent

See Reverse Energy Circuit.

v,,"'" vs
Case Temperature

Typical Reverse Current
vs Reverse Voltage

50

00 1

45

0.02
0.0 5

40

o. 1
35

~

f'

30

C>

~
o

25

~

20

0:

0.2

~

0.5

'"'"=>u

I

./

L

'".J:

5

~

~

/
~

./

/'

",

~
0

5

100
45

0

-55 -50 -25

0

25

50

75

100

125

150

40

35

./
V125'C

V-

/

/

/

10
20

0

V''];
'\>

/"

~~

>

~

1

./

V

~ I--

V

""
30

25

20

15

10

v, REVERSE VOLTAGE (% OFV""M)

175

CASE TEMPERATURE ('C)

Typical Forward Current
vs. Forward Voltage

Peak Relletitive
Forward Current
200
150

150

'" r\"'"

~g 120

'"
<"
~f;i

...
"'=>

"'u

80

I;.

1~

"",

100

VR = 0

r\.

E~

0..0:

r- V,= 45V
50% DUTY CYCLE
r- SQUARE
WAVE
f = 20KHz

\

125

150

I

5:

1\

\
100

"\.

w
a:
a:

20

<.J

10

::>

'i

.!!'

,

~

'"'"::>
'-'

::>
0

-

5
ft5

'l' /

12S0C

~oC

10

100

40

60
80
% of V, (V)

VS.

Temperature

1.0

.8

.6

120

V, - VOLTAGE (V)

Average Forward C4rrent
VS. Temperature

V. Rating
100%

INFINITE HEATSINK
with VRWM = RATED
(T c reference)

/'

~.V'

\

FREE~

..........

(T" reference)

I

.~

~

VRWM = RATED---

r\.

25

50

75

\

\

\\,\

Tc=--T. = - - - -

1

VA = 0

V_.

~\

\
/

V,

,\

\
-....~

~v_.

\~

\

I~ \

50

25

0

25

50

75

100

125

150 175

TEMPERATURE ('C)

'\
100

125

150

TEMPERATURE (OC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 86H540
TWX (710) 326·6509 • TELEX 95-1064

6-122

PRINTED IN U.S.A.

DUAL POWER SCHOTTKY RECTIFIERS
12A Av, up to 45V

USD620C
USD635C
USD640C
USD645C

FEATURES

DESCRIPTION

•
•
•
•
•

The USD600C series of power Schottky rectifiers, in the industry standard TO-220
package, is specifically designed for operation in power switching circuits to
frequencies in excess of 100 KHz. The series combines Schottky rectifiers in one
convenient package; thus, simplifying installation, reduCing heatsink requirements
and component parts count.

Very Low Forward Voltage
Reverse Transient Capability
Economical Convenient Plastic Package
Mechanically Rugged
45V Worki ng Voltage @ Rated T"m."

ABSOLUTE MAXIMUM RATINGS (Per Diode Unless Otherwise Noted)
USD620C

USD635C

USD640C

USD645C

Working Peak Reverse Voltage, VRWM .................................................... 20V ............. 35V ............. 40V ............ 45V .. ..
DC Blocking Voltage, VR .................................................................... 20V ............. 35V ............. 40V ............ 45V .. ..
Peak Repetitive Surge Voltage, VRSM @ IRM " .......... · ................................ 24V ....... _.. _.. 42V ............. 48V ............ 54V .. ..
Average Rectified Forward Current@Tc= 115°C, 10* .... " ...................................................... 12A ................................ .
Non-repetitive Peak Surge Current (8.3ms), IFSM .................................................................... 150A ................................ .
Peak Reverse Transient Current, IRM .................................................................................... lA ............................... ..
Operating Junction Temperature, T, ........... ...................................................................... 150°C .............................. .
Storage Temperature Range, Ts.................................................. " ...... " .................... -55°C to +150·C ...................... ..
Thermal Resistance, Junction to Case, ROJC ...................................................................... 3.0°C/W ............................ ..
"'Full Wave Center-Tap; 10 ~AVt 20 KHz Square Wave

ELECTRICAL CHARACTERISTICS (T CASE =25°C) (Per Diode)
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

iR

5

mA

VR = VRWM
Pulse Width = 400)15
Duty Cycle = 1 pe rcent

Maximum Instantaneous
Reverse Current

iR

50

mA

VR = VRWM
Pulse Width = 400)15
Duty Cycle = 1 percent
Tc = 125°C

0.55
0.65

V

iF = 6A
iF = 12A

0.48
0.60

V

iF = 6A
iF = 12A

Maximum Instantaneous
Forward Voltage

VF

Capacitance
Voltage Rate of Change

C.

1000

pF

dv/dt

1000

V/)15

CONDITIONS

I

Tc = 125°C

VR = 5V
VR = VRWM

MECHANICAL SPECIFICATIONS
USD600C SERIES

SEATING
PLANE

• 'M

....

Pin 1

1 ...

Pin 3

Pin2
&
Tab

A

0

c

,
0

G
H

,.....

lUl

,0.51
35]1

1270
1.14

Q

•

S
T

..

,."
,...

1.14

.OS

.AX

10.16

0.140

'"

3,733

...

2.19

L

INCMIS
MIN

15.'7

6.35

'.38

N

4/82

.'"' ....
.... .......... .....
.13.
.....
".

MILLIMETERI
MA •
M'N

J

•

TO·220AB

1427

.77

.....
..... .....
-

0.045

. .to

30.

Q.100

I."

6.85

6-123

0.110

0.015

5.n

20'

0.110

0.045
0.147

.....

0-045
0.210

0.512
0.010
0110
0.110
0.115

0.055

ono

~UNITRDDE

..

USD620C USD635C USD640C USD645C

Forward Current
vs. Forward Voltage
100

100

MAXIMUM VF vs IF vs T:;:
TYPICAL VF VS IF vs T - -

W

g

...
as

/

<-

-' ~ /

10

II:
II:
:0
U
Cl
II:

.4f'/.,,'C

'"


ffi

W?/

1.0

.1

~

MAXIMUM IR vs VR VS T-

~ .01

:

I

_2

20

.6

.8

\

\

:0
0..

FREE AIR
(T A refere~Ce)

..:t::: h:- k

o

25

50

VAWM = RATED

120

V.

Vow.

\

,\
\

\\

Tc=--T.=----

,

l'

1\
-50 -25

25

50

75

100

125

150

175

TEMPERATURE ('C)

'"

75

Vow.

1

vR = 0

.E

100

1\

1\

8

o

~.V.

(Tc reference)

:0

i--

T=

V. Rating vs. Temperature
100%

INFINITE HEATSINK
with VP,WM = RATED

10

I

VS

VOLTAGE (V)

...

:0
0

VA

80

60

\

...
...

VS

%ofV,(V)

14

/

40

1.0

Average Output Current
¥s. Temperature

'"'"u

TYPICAL hi

.001

.4

v, -

g
as

"

I

I I

12

'/.",<:,

It:':'~<:'

§i! ~<;

'"

...
0.1

~

...
'"'"
'"

/::,V

12"C

~'C

S
:0
U

./ I ~

~

I-

10

;z

L

II:

l2

Reverse Current
VS. Voltage

............

100

~

125

ISO

TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-124

PRINTED IN U,S.A.

USD720
USD735
USD740
USD745

POWER SCHOTTKY RECTIFIERS
16A Pk, up to 45V
FEATURES

DESCRIPTION

•
•
•
•
•

The USD700 series of Schottky power
rectifiers is ideally suited for output
rectifiers and catch diodes in high
frequency low voltage power supplies.

Very Low Forward Voltage
Reverse Transient Capability
Economical Convenient Plastic Package
Mechanically Rugged
45V Working Voltage @ Rated T"m."

ABSOLUTE MAXIMUM RATINGS
USD720

USD735

USD740

USD745

Working Peak Reverse Voltage, VRWM ...................................................... 20V ............. 35V ............. 40V ............. 45V ..
DC Blocking Voltage, VR ...................................................................... 20V ............. 35V ............. 40V ............. 45V ..
Peak Repetitive Surge Voltage, VR8M @ IRM ............................................... 24V ............ 42V ........... ,. 48V ............ 54V ..
Average Rectified Forward Current @ Tc = U5°C, IF (AV) ............................................................. 8A ................................ .
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20 KHz, 50% Duty Cycle, @ Tc = U5°G), IFRM ........ .......................................... I6A .............................. ..
Non·repetitive Peak Surge Current (8.3ms), IF8M ..................................................................... 200A ................ ..
Peak Reverse Transient Current, IRM .................................................................................... IA .............................. ..
Operating Junction Temperature, T, .................................................................................... 150°C ............................. .
Storage Temperature Range, T8t•................................................................................ -55°C to + 150°C ...................... .
Thermal Resistance, Junction to Case, R8JC ........................................................................ 2.8°C/W ............................ .

ELECTRICAL CHARACTERISTICS (TCASE = 25°C)
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

iR

5

mA

VR VRWM
Pulse Width 400j./S
Duty Cycle 1 percent

Maximum Instantaneous
Reverse Current

iR

50

mA

VR VRWM
Pulse Width 400j./S
Duty Cycle 1 percent
Tc 125°C

0.55
0.65

V

0.48
0.60

V

Maximum Instantaneous
Forward Voltage

Capacitance
Voltage Rate of Change

VF

Ct

1000

pF

dV/dt

1000

V/j./S

CONDITIONS

=

=
=

=

=
=8A
=16A
iF =8A }
iF =16A
VR =5V
VR =VRWM

=
=

iF
iF

Tc

=125°C

MECHANICAL SPECIFICATIONS
USD700 SERIES

SEATING

TO-220AC

PLANE

DIM
A
B

C
0
F

G

MILLlMmRS
MIN
MAX

1423
966
356
051
3531
229

H

J
K
L
N

Q
R
S
T

4/82

038
1270
114
483
254
204
114
585

1587
1066
4.82
114
3733
279
635
064
1427
177
533
304
292
139
685

6-125

INCHES
MIN
MAX

0560
0380
0140
0.020
0139
0090
0015
0500
0045
0190
0100
OOBO

0045
0230

0625
0420
0190
0045
0147
0110
0250
0025
0562
0070
0210
0120
0115
0055
0270

~UNITRDDE

•

USD720 USD735 ·USD740 USD745

Forward Current
Forward Voltage

Reverse Current
vs. Voltage

. VS.

100

100

MAXIMUM VF \IS IF \IS T-

TYPICAL VF VS IF

VS

,e,/'

g
I-

z

.~

<

lZS"C

~"G

10

5

',//

I-

10

'"
C<
C<

~,,"c

:::l
U

(J

;'7

0
C<

~

I~

C<

1.0

'"
'"G:i

r¢ iF'Pi

.1

§Ii! ~

0:

I

I.

J

0.1
.2

I I

.001

MAXIMUM IR VS VA vs T=
TYPICAL IR vs Vp. vs T =,

/

.!' .01

-"

I
I

7:,,,"c

t!!':~v


12

-

T=

I 1 I
80

60

100

Average Forward Current
vs. Temperature

V. Rating vs. Temperature

10

100%
I'V,WM V,

g

120

%ofV,(V)

1.0

V' \
\

8

V'WM

\

I-

Z

'"
C<
C<

~\

:::l
U

0

0:
«

\\.\

Tc=--TA = - - - -

;<
C<

12

I\~

-"

0
0

25

50

75

100

125

-50 -25

150

UNITRODE CORPORATION" 5 FORBES ROAD
LEXINGTON, MA .02173 " TEL. (617) 861·6540
TWX (710) 326·6509 " TELEX 95-1064

25

50

75

100

125

150

175

TEMPERATURE ("G)

TEMPERATURE ("G)

6-126

PRINTED IN U.S.A.

DUAL POWER SCHOTTKY RECTIFIERS
16A Av, up to 45V

USD720C
USD735C
USD740C
USD745C

DESCRIPTION
The USD700C series of power Schottky rectifiers, in the industry standard TO·220
package, is specifically designed for operation in power switching circuits to
frequencies in excess of 100 KHz. The series combines Schottky rectifiers in one
convenient package; thus, simplifying installation, reducing heatsink requirements
and component parts count.

FEATURES
• Very Low Forward Voltage
• Reverse Transient Capability
• Economical Convenient Plastic Package
• Mechanically Rugged
• 45V Working Voltage @ Rated T"m."

ABSOLUTE MAXIMUM RATINGS (Per Diode Unless Otherwise Noted)
USD720C
USD73SC
USD740C
USD74SC
Working Peak Reverse Voltage, VRWM ....................................... 20V ........... 35V ........... 40V ........... 45V .. .
DC Blocking Voltage, VR ....................................................20V ........... 35V ........... 40V ........... 45V .. .
Peak Repetitive Surge Voltage, VRSM @ IRM ................................. 24V ........... 42V ........... 4SV ........... 54V .. .
Average Rectified Forward Current @ Tc = U5·C, 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A ......................... ..
Non·repetitive Peak Surge Current (S.3ms), IFSM ................................................. 200A..................... " ... .
Peak Reverse Transient Current, IRM .............................................................. IA ........................... .
Operating Junction Temperature, Tj ............................................................ I50·C ........................ ..
Storage Temperature Range, Tstg .......................................................... -55·C to +150·C .................... .
Thermal Resistance, Junction to Case, R9JC .................................................... 2.S·C/W .. ..................... ..
·Full Wave Center·Tap; 10 (AV) 20KHz Square Wave

ELECTRICAL CHARACTERISTICS (TeASE = 2S·C) (Per Diode)
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

iR

5

mA

VR VRWM
Pulse Width 400j./s
Duty Cycle = 1 percent

Maximum Instantaneous
Reverse Current

iR

50

mA

VR VRWM
Pulse Width 400j./S
Duty Cycle 1 percent
Te I25·C

0.55
0.65

V

iF SA
iF = 16A

0.4S
0.60

V

Maximum Instantaneous
Forward Voltage

VF

Capacitance
Voltage Rate of Change

CONDITIONS

=

=

=

=
=

=
=

Ct

1000

pF

=SA ~
=16A
VR =5V

dv/dt

1000

V/j./S

VR= VRWM

iF
iF

Te

=I25·C

MECHANICAL SPECIFICATIONS
TO·220AB

.,M

MILLIMETERS
MI.
MU

•

~

Pin 1

1

Pin2
&
Tab

~

• •

Pin!

H

J

..

INC ES
MI.

....0

10",
'"
'56

A.""

A.'"

0.140
0020

0.110
0.045
Q.l41

"'
0.0"
'" '"
'" ""
'"
otO)
". ,'"... otOO
051

3531

0.38
1270

IU

3133

1427
177

0015
0.500
00..

48'

30'

... ...
'04

1.1'

4/82

MA'
0.615

15.,

1423

t."

6·127

0 ....

0.045
0.210

........,
0.110

0.""

0.070

0210
0.110
0.115
0.055
0.270

~UNITRDDE

•

,USD720C USq735C USD740C USD745C

Reverse Current
vs. Voltage

Forward Current
Forward Voltage

VS.

100

100
MA~IMUM
TYPIC~L

VF vs IF VS T =
VF vs I,F vs T -

/-7. "/
,,~

~
fz

~

lO

:<

V/

r,j;J

0:

~

'"'C

.1

G;

~,>'C

~.;V
;;

0:

.!!

-"

, 1'/
Ii

I

.L.

~

:::>
u

0:

~

f-

0:
0:

<.J
'0

125'C

~'C

S

~
:::J
f2

I J-

10

MAXIMUM 1ft VS

.01

/

VA VS

T -= -

TYPICAL 1ft vs VR vs T = -

-

f

0.1

.2

.001

J
.4

v, -

20

.6
VOLTAGE (V)

40

Average Output Current
vs. Temperature

~.v.

16 ~--+---~---+----~~+---~

121---+--\---+--\---4---\

~

10

1--+--1--+--1---++---1

:::J

u

ir
f:::J

I

4

1=:::;:;;?~4.;+:""

25

50

75

TEMPERATURE

Vow.

V.

Vow.

" \.\

Tc=--T.=----

f-

.2

120

\'\ \l
\\

14

~

o

100

V. Rating vs. Temperature
100%

§

80

60
%ofV.(V)

1.0

.8

I\~

100

125

-50 -25

150

ee)

UNITRODE CORPORATION· 5 FORBES RoAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6i;b9 • TELEX 96-1064 ' "

25

50

75

100

125

150 175

TEMPERATURE ('C)

6-128

PRINTED IN U.S.A.

POWER SCHOTTKY RECTIFIERS

USD820
USD835
USD840
USD845

24A Pk, up to 45V
FEATURES

DESCRIPTION

•
•
•
•
•

The USD800 series of Schottky barrier
power rectifiers is ideally suited for
output rectifiers and catch diodes in
low voltage power supplies.

Very Low Forward Voltage (0.45V max @ 12A)
Reverse Transient Capability
Economical Convenient Plastic Package
Mechanically Rugged
45V Blocking Voltage @ Rated T,m..

ABSOLUTE MAXIMUM RATINGS
USD820

USD835

USD840

USD845

Working Peak Reverse Voltage, VRW........................................... 20V ........... 35V ........... 40V........... 45V
DC Blocking Voltage, VR ..................................................... 20V ........... 35V ........... 40V ........... 45V
Peak Repetitive Surge Voltage, VRSM @ IR...................................... 24V ........... 42V ........... 48V ........... 54V
Average Rectified Forward Current @ Tc = 115°C, 10 ••••••.•••••.••..•••••••••••••••••••••••••••••.•• 12A ...................... .
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz, 50% Duty Cycle, @ Tc = 115°C), IFR.......................................... 24A ...................... .
Non-repetitive Peak Surge Current (8.3mS), IFSM .................................................... 200A ..................... .
Peak Reverse Transient Current, IRM ................................................................ 1A ...................... .
Operating Junction Temperature, T; ................................................................ 150°C ..................... .
Storage Temperature Range, Ts••............................................................ -55°C to + 150°C ................ .
Thermal Resistance, Junction to Case, R.JC ••••••••••••••••••••••••••••••••••••••••••••••••••••••• 2.4°C/W .................... .

ELECTRICAL CHARACTERISTICS (T CAse

=25°C)
CONDITIONS

SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

iR

20

mA

VR = VRW ..
Pulse Width = 400pS
Duty Cycle = 1 percent

Typical Instantaneous
Reverse Current

iR

50

mA

VR = VRWM
Pulse Width = 400pS
Duty Cycle = 1 percent
Tc = 125°C

0.59

V

iF," 12A

0.51

V

iF ;=12A
Tc = 125°C
VR= 5V

CHARACTERISTIC

Maximum Instantaneous
Forward Voltage

Capacitance
Voltage Rate of Change

VF

C.

2000

pF

dvldt

1000

VipS

VR= VRWM

MECHANICAL SPECIFICATIONS
USD800 SERIES

SEATING
PLANE

DIM
A
B

C
D
f
G
H
J
K
L
N

R
S

T

4/82

MILLIMETERS
MIN
MAX
1423
966
356
051
3531
229

038
1270
114
483
254
204
114
585

1587

1066
482
114
3733
279
635
064
1427
177
533
304
292
139
685

6-129

TO·220AC

INCHES
MIN
MAX
0625

0560
0380
0140
002D
0139
0090

0015
0500
0045
0190
0100
0080
0045
0230

0420
0190
0045
0147
0110
0250
0025
0562
0070
0210
0120
0115
0055
0270

~UNITRDDE

•

'USD820 USq835 USD840 USD845

Typical Reverse Current
¥S. Voltage

Typical Forward Current
VS. Forward Voltage
100

100

-

50

~V

~~

T; = 125'C

,

{J"= 1OO'C
T; =75'Cr"'"

1
T; =25'C

I

§

=,f'1 I

=:!glt
=
=
- .~ ...~!!J>:?,
;.>

0.0 1

7' "
/

0.1
0.0 0.1

0.2

Y

J J

I I I
o 10 20

"'
0.3

V

1

0.4 0.5 0.6 0.7
V, - VOLTAGE 01)

0.8

0.9

I

I I

30 40 50 60 70 80 90 100 110 120 130
%ofV,CV)

1.0

Output Current
Temperature

V. Rating vs. Temperature

VS.

14

100%

VRWM

\V,

12

~r~c::!e=t~~d/

~1O

:>

~

1\
\

(.)

f-

ir

'3o

J.

,\

"\\

:\

0:
0:

::::J

6
Free Air

4

-

'j; reference)

.....:::: ~
25

V'I= 0

~/Rated

"<

~

75
50
100
TEMPERATURE C'C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Vow.

\ \

\

(T (: reference)

V,

Tc=--TA = ----

\

-50 -25

25

50

75

100

125

150

175

TEMPERATURE C'C)

~

125

,\

I\~

150

6-130

PRINTED IN U.S.A.

USD920
USD935
USD940
USD945

POWER SCHOTTKY RECTIFIERS
32A Pk, up to 45V
FEATURES

DESCRIPTION

•
•
•
•
•

The USD900 series of Schottky barrier
power rectifiers is ideally suited for
output rectifiers and catch diodes in
low voltage power supplies.

Very Low Forward Voltage (0.5V max @ 16A)
Reverse Transient Capability
Economical Convenient Plastic Package
Mechanically Rugged
45V Blocking Voltage @ Rated Tlma,

ABSOLUTE MAXIMUM RATINGS
USD920

USD935

USD940

USD945

Working Peak Reverse Voltage, VRWM ....................................... 20V .......... 35V .......... 40V .......... 45V ..
DC Blocking Voltage, VR ................................................... 20V .......... 35V .......... 40V .......... 45V ..
Peak Repetitive Surge Voltage, VRSM @ IRM ................................. 24V .......... 42V .......... 48V .......... 54V ..
Average Rectified Forward Current @ Te = 115°C, 10 ••••••.•.•••••.•••.••.•••••••••••.•••••••••••• 16A ....................... .
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz, 50% Duty Cycle, @ Te = 115°C), ,FRM ...................................... 32A ....................... .
Non-repetitive Peak Surge Current (8.3mS), IFSM .................................................. 250A ....................... .
Peak Reverse Transient Current, IRM .............................................................. 2A ........................ .
Operating Junction Temperature, T j • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 150°C ...................... .
Storage Temperature Range, T st•..•..•.•.•.•.••...•..•••.•••.....••..•.••.•.•.......•.•... -55°C to +150°C ................. .
Thermal Resistance, Junction to Case, RSJe ...................................................... 2°C/W ...................... .

ELECTRICAL CHARACTERISTICS (T CASE = 25°C)
CHARACTERISTIC

CONDITIONS

SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Cu rrent

iR

20

mA

VR = VRWM
Pulse Width = 400pS
Duty Cycle = 1 percent

Typical Instantaneous
Reverse Current

iR

50

mA

VR = VRWM
Pulse Width = 400pS
Duty Cyc Ie = 1 percent
Te = 125°C

0.6

V

iF = 16A

0.53

V

iF =16A
Te = 125°C
VR = 5V

Maximum Instantaneous
Forward Voltage

Capacitance
Voltage Rate of Change

VF

Ct

2000

pF

dvldt

1000

VipS

VR = VRWM

MECHANICAL SPECIFICATIONS
USD900 SERIES

SfATING

TO·220AC

PLANE

DIM
A
B
C
D
F
G

H

J
K

L
N
Q
R

S
T

4/82

MILLIMETERS
MIN
MAX
1587
10 66
482
114
3733
279
635
064
038
1270 1427
114
177
483
533
304
25"
204
292
1.14
139
585
685
1423
966
356
051
3.531
229

6-131

INCHES
MIN
MAX
0.560 0625
0380 0.420
0140 0190
0020 0045
0139 0.147
0090
0110
0250
0015 0.025
o SOO 0562
0045 0070
0190 0210
0.100 0120
0080 0115
0045 0.055
0230 0270

~UNITRDDE

II

USD920 USD935. USD940 USD945

Typical Reverse Current
VS. Voltage

Typical Forward Current
VS. Forward Voltage
100

100
T,

50

I~ ~=lbo'c

~7

~10

zOJ

Tj

=75°C

I

'"'"

r--

Tj = 25°C

:::l
U

"«'"

I

'"
f2"

~
~ ~i9ih '"
1=
~ ...?:~
I-- ~'
~I
"

-"

I

/ III

01
0.0 0.1

0.2

0.3

V

I

/1
====..''

o
0.4

0.5

06

0.7

08

09

10 20 30 40 50 60 70 80 90 100 110120 130
%ofV,(V)

10

V, - VOLTAGE (V)

Output Current
Temperature

V. Rating VS. Temperature

VS.

100%

~.V'

16 ~--+---~---+--~--~~~

~

12

~

10

~

VRWM

\, \

14

V,

VRW•

~

\\
\

f--+--f--+--f--+\----i

:::l

u
>-

i[

.

>-

:::l

o

\\~\

Tc=--T.=----

I

I\~

_ __ 3_ _ _ _

75

100

125

~

__

50

~

__

~

o L -_ _
o
25

~

.E

~

"','

"

10

h V
<'

=125"C

-50 -25

150

TEMPERATURE (0C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI t'lGTON, MA 02173 " ·TEL. (617) 861-6540
TWX (710) 326-6509 " TELEX 95·1064

25

50

75

100

125

150

175

TEMPERATURE (OC)

6-132

PRINTED IN U.S.A.

POWER SCHOTTKY RECTIFIERS

USDl120
USDl130
USDl140

lA, Up to 40V

FEATURES

DESCRIPTION

• Very Low Forward Voltage
(O.45V max @ 1A for the USD1120)
• Low Stored Charge, Majority Carrier
Conduction
• Economical, Convenient Plastic Package
• Small Size

The USD1120, USD1130 and USDl140
series of Schottky barrier rectifiers are
ideally suited for use as rectifiers in low
voltage, high frequency inverters, as free
wheeling diodes and as polarity protection
diodes.

•

ABSOLUTE MAXIMUM RATINGS
USD1l20

USD1l30

USDl140

Peak Repetitive Reverse Voltage, VRRM ........................ 20V .................... 30V ................... 40V ............ ..
Working Peak Reverse Voltage, VRWM .......................... 20V ................... 30V ................... 40V ............ ..
DC Blocking Voltage, VR ...................................... 20V ................... 30V ................... 40V ............. .
Non·Repetitive Peak Reverse Voltage, VR8M .................... 24V ................... 36V ................... 48V ............. .
RMS Reverse Voltage, VR(RMSI ................................. 14V .................... 21V ................... 28V: ............ .
Average Rectified Forward Current, 10 ................................................. l.OA ..................................... .
(VR(eqU'" :5 0.2 VR(DC), TL = 90°C,
ROJA 80°C/W, PC Board Mounting,
see Note 1, T A = 55°C)
Ambient Temperature, T A ................................... 85°C ................... 80°C .................. 75°C ............ .
(Rated VR(DC), PFCAVI = 0, ROJA = 80°C/W)
Non·Repetitive Peak Surge Current, 1. 8M ....................................... 50A (for one cycle) .............................. .
(Surge applied at rated load conditions, half·wave,
single phase 60Hz, TL = 70°C)
Operating and Storage Junction Temperature Range, ........................... -65°C to +150°C ............................... .
(Reverse Voltage Applied)
Thermal Resistance, Junction to Ambient (Note 1), R JA ........................... 80°C/W Max................................. .

=

Note 1: Lead Temperature reference is cathode lead

V.i'

from case.

MECHANICAL SPECIFICATIONS
USD1l20 USD1130 USDl140

A
B

D

K

Soldering 220°C.

11182

1/16"

INCHES
MIN
MAX
0.160
0.260
0.110
0.120
0.030
0.034
1.0
-

ASA

MILLIMETERS
MIN
MAX
4.06
6.60
2.79
3.05
0.76
0.86
25.4
-

from case for ten seconds

6-133

~UNITRODE

..

USDl120 USDl130 USDl140
ELECTRICAL SPECIFICATIONS (T L = 25°C unless noted)
CHARACTERISTIC

SYMBOL

Maximum Instantaneous
Forward Voltage (Note 2)

VF

Maximum Instantaneous
Reverse Current @ Rated
DC Voltage (Note 2)

i.

Note 2: Pulse'width

USD1120

USD1l30

USD1l40

UNITS

0.450

0.475

0.500

V

0.600

0.625

0.650

V

1.0

1.0

1.0

mA

10

10

10

mA

CONDITIONS

= LOA
=3.1A
TL =25°C
TL = 100°C
iF
iF

= 300/15; duty cycle = 2%.

Typical Forward Voltage vs
Forward Current (USD1120)

Typical Reverse Current
vs Reverse Voltage
10

20

TA -125°C

15
~

w

~

g

F

.2

:::J

0:

~TA -75°C

01

T. - 125"G

T.-75"C

1/

«
s:0:
12

= t==

T... - -55 D C

.5
.2

I

TA _25°C

25"C=

T.

U
0
0:

05
~
a::: .02

I

==

F

:::J

1=

"
~

10

>-

ti
0:

T. -lOO"C

.1

005

05

.002

.02

.001

.01

10 20 30 40 50 60 70 80 90 100

7

01.23.4.5

.8

9

1.0

V, - FORWARD VOLTAGE (V)

V, - REVERSE VOLTAGE (% of V'WM)

Typical Forward Voltage vs
Forward Current (USD1l30. USD1l40)
Output Current vs
Lead Temperature
1.2
20

g

T. = 125"G

lO

>-

z

E

W
0:
0:

g

=~

>T.=25"G

F

V

T. - 55"G

0:

3:
0:

12
I

W
0:
0:

:::J

u

:::J

«

--..... t'-....

z

T. - 75"G

"0

1.0

I==: I=::

.5

....,~

08

'"

0
0:

«

s:0:
12

0.6

w

.2

'"ffi«

.1

04

>
«

.05

I 0.2

~

.01

a

'" "
'-

0

.02

~

.1

.2

.3

.4

.5

.6

.7

.8

.9 1.0

75

V, - FORWARD VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON,MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

85

95

105

115

125

135

145

T, - LEAD TEMPERATURE ("G)

6·134

PRINTED IN U.S.A.

USM140C
USM145C
USM150C
Preliminary

POWER SCHOTTKY MODULES
lOOA, Up to 50V

FEATURES

OESCRIPTION

• Low Forward Voltage

The Unitrode Schottky Module utilizes
high current Schottky rectifiers, in a
convenient single package, arranged in a
common cathode configuration. The
combination of low thermal resistance and
high conductance terminals makes this
device ideally suited for high current full
wave center-tap rectification or feedforward applications.

• Low Recovered Charge
• High Reverse Transient Capability
• High Surge Current
• High Efficiency for Low Voltage Designs

ABSOLUTE MAXIMUM RATINGS (per diode unless noted)
USM140C
USMl45C
USM150C
Working Peak Reverse Voltage, VFtWM ..................................... 40V ............... 45V .............. 50V ............ .
DC Blocking Voltage, VR ................................................. 40V ............... 45V .............. 50V ............ .
Peak Repetitive Surge Voltage, VRSM ...................................... 48V ............... 54V .............. 60V ............ .
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz
50 Percent Duty Cycle), IFRM ............................................................. IOOA .............................. .
Average Rectified Forward Current, 10 .•.•.•...•..•.•.•••...••........••.. IOOA (@ Te = 115·C Fullwave Configuration) .......... .
Non·repetitive Peak Surge Current, IFSM ................................................... IOOOA ............................ .
Peak Reverse Transient Current, IRM. . . . . . . . . . . . .. . . . .. . . . . . . . . . . . . ... .. .. . . . . . . . . . . . . . .. . .. 2A .............................. .
Storage Temperature Range, TSTG .................................................... -40·C to + I50·C ....................... .
Operating Temperature Range, TJ ................................................... -40·C to + I75·C ....................... .
Thermal Resistance, R9JBP .........................................................
per module ...................... .

o.rc/w

MECHANICAL SPECIFICATIONS
USM140C USM145C USMl50C

"~~rl \ti \

~ ~~"
1~~\
1
~~11 ~
t-

'.

F
TERMINAL (C)
(AI)
ELECTRICALLY COMMON
TO BASE PLATE

11/83

-/

~

INCHES
MILLlMmRS
MAX.
MIN.
MAll
1.197
20.39
30.40
.030
.035
.762
.889
.365
.385
9.27
9.78
.370
.390
9.40
9.91
.8BO
22.35
.160
.IBO
4.06
4.57
.270
.290
6.87
7.37
.151
.161
3.84
4.09
.188 RAO.
4.78 RAO.
.030
.035
.762
.889
.525 RAO.
13.34 RAO.
TBP Ref. Point - Geometric
Center of Base Plate

MIN.

(Al/~\

r-

Ml

L

A

B
C

0
E
F

G
H

J
K
(A2)

L
T

1.177

6-135

~UNITRODE

II

USMl40C USM145C USM150C

ELECTRICAL CHARACTERISTICS (TBP = 25°C unless noted) (Per Diode)
CHARACTERISTICS

SYMBOL

CONDITIONS

=
=

Maximum Instantaneous
Reverse Current

iR

VR VRWM
(T BP 125°C)
Pulsewidth 400ps
Duty Cycle 1%

Maximum Instantaneous
Forward Voltage

VF

IF 60A
(Tap 125°C)
Pulsewidth 300pS
Duty Cycle 1%

Maximum Instantaneous
Forward Voltage

VF

IF l00A
(Tap 125°C)
Pulsewidth 300ps
Duty Cycle 1%

Ct

VR

=
=

Capacitance
Voltage Rate of Change

=

UNITS

20
(75)

mA

.690
(.630)

V

.860
(.775)

V

=
=
=
=

=
=

=5V
VR =VRWM

dvldt

Reverse Energy

=

LIMIT

3000

pF

1000

Vips

2

A

See Reverse Energy Circuit

IRM

Typical Reverse Current
vs Reverse Voltage

Typical Forward Current
VI Forward Voltage
200
100

g

....z

w

10

()

S.O

'"'":::>
0
'"'"3<
'"~

...

<

.s....

/J '/J /

ISO'C'12S'C:
2.0

I

J l- i-

"II
0.1

0.2

0.3

0.4

()

...

2S'C

,-

II I

0.2

10

'"'"w
~
'",

7S'C

-4O'F

0.6

f..- .--

0.5
0.2

0.7

0.8

09

1.0

-I-

7 5'

1.0

0.1
05

i-- f.-"

125 C

S.O
3.0

w

'I'

20

w

'"'":::>

.f.J /1 I

j

0.5

z

'// I

fj

1.0

~~

50

~ ~ /'

20

v

100

~ ~ V'

50

o

10

W

~

~

50

W

L

V

./
25'

M

~

~

~

V. - REVERSE VOLTAGE ('II. of V_)

V, - FORWARD VOLTAGE (V)

Output Current VI
ease Temperature

Reverse Energy Circuit

120

-.......

100

......... r--...

~

-..lOV

........ .......

L

..........

=24phy

"

60

40

20

t. adjust for desired peak current in D.U.T. when Q turns off.
Q, must have fall time tf of lOOns max.

o
100

110

120

130

I~

150

Tap - BASE PLATE TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

6-136

PRINTED IN USA

USM20040C
USM20045C
USM20050C
Preliminary

POWER SCHOTTKY MODULES
200A, Up to 50V

FEATURES
• Low Forward Voltage
• Low Recovered Charge
• High Reverse Transient Capability
• High Surge Current
• High Efficiency for Low Voltage Designs

DESCRIPTION
The Unitrode Schottky Module utilizes
high current Schottky rectifiers, in a
convenient single package, arranged in a
common cathode configuration. The
combination of low thermal resistance and
high conductance terminals makes this
device ideally suited for higher current full
wave center-tap rectification or feedforward applications.

ABSOLUTE MAXIMUM RAllNGS (per diode unless noted)
USM20040C

USM20045C

USM200SOC

Working Peak Reverse Voltage, VRWM .. _...... __ . ___ . _.............. _. _. __ 40V . _.. _.... _.. _. _45V .. _. __ . _... _.. 50V .. ____ . _. _.. .
DC Blocking Voltage, VR .. _..... _. __ .......... _.. __ .. _.. _. __ ..... _. _. _. _. 40V ... __ .... _. _... 45V .. _.. _... ____ . 50V _........ _.. .
Peak Repetitive Surge Voltage, VRSM _............ __ ... _. __ .............. _. 48V _.. _........... 54V ..... _... _. _. _60V _.. _.. ___ . _..
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz
50 Percent Duty Cycle). IFRM ______ .. _..... ____ ......... _.. __ . _. __ . _. _...... __ . __ .... __ .. _200A .. __ . __ ... _. __ .... _........... .
Average Rectified Forward Current, 10. ______________ ... ____ .... ____ .. ____ 200A (@ Te = 115·C Fullwave Configuration) .. ________ ...
Non-repetitive Peak Surge Current, IFSM .......................... ____ ................. __ ... 2000A __ .... __ ..... __ ............... .
Peak Reverse Transient Current, IRM .. __ ... __ ................ __ ....... __ . __ ... __ .. __ ... __ . .. 2A. __ .... __ .... ___ ........ __ ..... .
Storage Temperature Range, TsTG ......... ____ ...... __ .... ____ ....................... -40·C to + 175°C __ ..... __ ...... ____ ..... .
Operating Temperature Range, TJ .. __ ............... __ '" __ .................... __ . __ . -40°C to + 175°C ...... __ .. __ .......... __ .
Thermal Resistance, RBJBP ............................................ __ .......... O.28°C/W per module ... ____ ............ __ ..
Thermal Resistance, RSJBP ................................................ __ ......... O.56°C/W per leg ........................ .

MECHANICAL SPECIFICATIONS
USM20040C USM20045C USM20050C

M2

Terminal Torque: 50 (Min.) 75(Max.) lb. - in.
Mounting Base Torque: 30(Min.) 40(Max.) lb. - in.

HI-m----w-~

Al~A21
C (ELECTRICALLY COMMON
TO BASE PLATE)

11/83

A
B

C
0
E
F

G
H
T

MILLIMETERS
INCHES
MAX,
MAX.
MIN.
MIN.
66.80
2.63
1.35
1.40 34,29 35.56
.70
.80 17.78 20.32
15.88
.625
79,76 80.26
3.14
3.16
92.71
3.65
,27
6,35
6,86
.25
'/. - 20 UNF With
Captive Lockwasher
TBP Ref. Point - Geometric
Center of Base Plate

6-137

~UNITRODE

•

USM20040C USM20045C USM20050C

ELECTRICAL CHARACTERISTICS (TBP = 25°C unless noted) (Per Diode)
CHARACTERISTICS

SYMBOL

Maximum InstantaneQus
Reverse Cu rrent

iR

Maximum Instantaneous
Forward Voltage

VF

IF = 100A
Pulsewidth =3001's
Duty Cycle = 1%
(TBP = 125°C)

Maximum Instantaneous
Forward Voltage

VF

Capacitance

C.

Voltage Rate of Change

dvldt

Reverse Energy

USM20045C USM20050C

V
(.575)

IF = 200A
Pulsewidth = 300pS
Duty Cycle = 1%
(T BP = 125°C)

(.745)

VR = 5V

6000

pF

VR = VRWM

1000

VIpS

2

A

.800

Typical Forward Current
vs Forward Voltage

5,

20

w

10

....z
0:
0:

:::>

"0

5.0

~

~

2.0

2

1.0

".

0.5

:r:

AW

.s....
w

U>

75'C

-

25'C

0.1

-40'C

g
....z

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

:::l

80

......
0

......
r-

V

~

/"

V'

25'C

I
I

o

10

20

30

40

50

60 70

80

90 100

Reverse Energy Circuit

~

.......... ......

+10V

.......

160

120

...... V

VR - REVERSE VOLTAGE ~ 01 VVR")

FORWARD VOLTAGE (V)

....
..........

'-..

0:
0:

"::>....

1.0

0.1

w

::>

2.0

~
I-

0.2

Output Current VII
ease Temperature
220

0:

~

I

10

0.5

v, -

200

20

5.0

I

1'/
o

I
~C

50

0:

w
~

f-

'f

0.1

()

.$

III/

0.2

0:
0:

::>

'II I
f.

100

z
W

,///1
(/1
II
150'CoJ

I
~

200

~

12~'C~

I

400

~

50

V

Typical Reverse Current
vs Reverse Voltage

200
100

mA

30
(150)

30
(125)

See Reverse Energy Circuit

IRM

UNITS

LIMIT

CONDITIONS
VR = VRWM
Pulsewidth = 400pS
Duty Cycle = 1%
(T BP = 125°C)

I
oS

40

t. adjust for desired peak current in D.U.T. when Q turns off.
Q, must have fall time t, of lOOns max.

o
100

110

120

130

140

150

Top - BASE PLATE TEMPERATURE ('e)

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • ·TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6·138

PRINTED IN U.S.A.

UT236-UT347
UT249-UT363
UT251-UT364
UT261-UT268

RECTIFIERS
Standard Recovery, 1 Amp to 2 Amp

DESCRIPTION
These miniature power rectifiers offer the
user extreme reliability for high-rei
military supplies_

FEATURES
• Continuous Rating: to 2A
• Controlled Avalanche
• Surge Rating: to 30A
• PIV: to lOOOV
• Miniature Package

•

ABSOLUTE MAXIMUM RATINGS
1 Amp

1.25 Amp

1.5 Amp

Peak Inverse Voltage

Series

Series

Series

100V
200V
400V
500V
600V
800V
1000V

UT236
UT234
UT235
UT237
UT238
UT361
UT347

UT249
UT242
UT244
UT245
UT247
UT362
UT363

UT251
UT252
UT254
UT255
UT257
UT258
UT364

Maximum Average D.C. Output Current
@ T, == 25'C
@ T, == lOO'C
Non-Repetitive Sinuosoidal
Surge (8.3ms)
Operating Temperature Range
Storage Temperature Range
Thermal Resistance

1 AMP
SERIES

....... 1.0A.
O.5A ...
.20A ..

2 Amp
Series

UT261
UT262
UT264
UT265
UT267
UT268

1.5 AMP
SERIES

1-25 AMP
SERIES

1.25A ..
......... O.65A ... .

1.5A.
...... O.75A ...

2 AMP
SERIES

..... 2.0A
............ 1.0A

......... 20A..
. ..... 25A....
... 30A
-195'C to +175'C ..
-195'C to +175'C. ................. .
See lead temperature derating curve ............................. .

MECHANICAL SPECIFICATIONS
UT236-UT347 UT249-UT363 UT251-UT364 UT261-UT268

BODY A

Part Identification: Orange band indicates "UT." Part
number· printed on body.

Polarity: Denoted by orange band.
Weight: 0.26 grams, typica:.

6-139

~UNITRDDE

UT236-UT347 UT249-UT363 UT251-UT364 UT261-UT268
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)

TYpe

PIV

UT26I
UT262
UT264
UT265
UT267
UT268
UT25I
UT252
UT254
UT255
UT257
UT258
UT364
UT249
UT242
UT244
UT245
UT247
UT362
UT363
UT236
UT234
UT235
UT237
UT238
UT361
UT347

IOOV
200V
400V
SOOV
600V
800V
IOOV
200V
400V
SOOV
600V
800V
IOOOV
IOOV
200V
400V
500V
600V
SOOV
lOOOV
lOOV
200V
400V
500V
600V
800V
lOOOV

Maximum Leakage
Current t1iJ PIV

Maximum Forward
Voltage Drop

2S'C

100·C

IV@900mA

2pA

75pA

IV@7SOmA

2pA

75pA

IV@500mA

2pA

75pA

IV@400mA

2pA

75pA'

Maximum Current
vs Lead Temperature

Maximum Current
vs Lead Temperature

1 AMP SERIES

~

z

'"'"

a'"o
...;;:
~
'"'"
"
«
'"«>'"

2

~ 3

~
2.5 ~

L=W·

1.1 AMP SERIES

...~z

>-

2
,~~---+---+---+--~

'"
o
ii:
'"
;:

@
~~

1.5

f;l

~

'"'"
~
'"~

d

1

L =

:::>
u

2

L=~

L~
......................

1

.2

.2

o
25

50
Tl -

75
100
125
150
175
LEAD TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710),326-6509 • TELEX 95-1064

25

6-140

3

'""'""

"~
'":u
@

~

I'--- ~

I

I

Va"

r-.....

~~

1

l'::
t\.
............

.5

~

II
!::;
"I
n

o

50
75
100
125
150
175
T, - LEAD TEMPERATURE ('C)

PRINTED IN U.S.A.

UT236-UT347 UT249-UT363 UT251-UT364 UT261-UT268
Maximum Current
vs lead Telllflerature

Maximum Current
vs lead Temperature
1.2SAMP SERIES

~

~

I-

I-

Z

L

W
0:
0:

:>
U

o

w
;;:

~

0:
W

:

1

Z

= '4"

U

2J

W

0

;;:
;:::

~,.

1"'-

I'----.. ['...

"a:w
>
"I

.5

--......:: ~'\

..9

25

50
Tl -

75

100

--...........
1

150

25

LEAD TEMPERATURE (OC)

:t
.:;
zw

:>
U

.05
.1
.2

en

w

.5

w
>
w

2

0:
0:

75

v..
1/1/

~

I III

.5

1//" oCJ

w

u.05

I

li

.01

I

.005

---t;'5°C
"

.002

II

% OF PIV

.6
.8
1
VOLTAGE (V)

V, -

Typical Forward Current
vs Forward Voltage

II
11

.4

.2

1.25 AMP SERIES

v~ ~P-

l:>-

1/[/vV'
/ J[/[/

~ .5

I-

~

I~

U.05

Q"

w

II

.01

u.05

II

.002

2

A
V, -

II

.01

.005

II
II

.001

1/·1

I
_".02

II

~
~
1
VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

IL

.001

12

IA

.2

6-141

0

I

II

II

I

.002

I

0"

r-r-r.L ~ -J..~ -I-lJ~1

:>

I

.005

CJ

(r)

~ .1

f-

1/·/ I

I
_~.02

ik .0 ~/~CJ

Z .2

0

"'ill$?-

l-J..J

II

V

I-

r-

liCJ oCJ CJ CJ-

~ .1
:>

1.4

10

1.5 AMP SERIES

Z .2

1.2

Typical Forward Current
vs Forward Voltage

10

~ .5

l-

[L

II

II

.001
50

U

II I I

II

_~.02

~75OC

{J

S ~k5:
"/-"/--1-1

~ .1
:>

../

100

175

VVrL

i

w

150

2 AMP SERIES

0:

150

125

Typical Forward Current
vs Forward Voltage

-~OC

50
100

.5

LEAD TEMPERATURE (OC)

Z .2

10
20

<>

~
-.........
~~

100

I-

0:

...1/
......
u:

~

2

.......

sooC

.02

I-

50
Tl -

-

.005
.01

2J

@

10

ALL SERIES

(g
~

1,,\

175

Typical leakage Current VS. PIV

.001
.002

'" .'"

""'"
I'--..

..9

"

125

3

h



:IE

",

"':~

3

0:
0:

@

-... r--.

"I

w

...0

"'" ~
~~
"r!:..-W'""- ~

w
>

_.t =Va"

A
V, -

1/

I

L

.6
.8
I
VOLTAGE (V)

1.2

1.4

PRINTED IN U.S.A.

II

UT236-UT347 UT249-UT363 UT251-UT364 UT261-UT268

Typical Forward Current
vs Forward Voltage
10
1 AMP SERIES

// ~
V/ /V

~ .5

....

z

/V II

.2

w

it f--r-

L:~8"ff
:;::;:f!,

~ .1

0

::0

U.05

II

I
':.02

I1I1

.01
.005

I

.002

II

II

j

.001

.2

Ill/
I

.4

.6
.8
1
VOLTAGE (V)

V, -

1.2

Efficiency vs Frequency at Rated Current (Sine Wave)

Allowable Forward Surge vs Number of Cycles
100

i

~

'"
"'"

'"
'";;:
::0

80

.""- .......

IIII

60

" ~t:::I'

III

C

~Go

III

...

100

-....

ALL SERIES

VI

I I
~Jr~~ll" c~nte~s

~

.... ...
::00

::>
::ow

-

0'-'

Turret 1/2" centers
Printed Circuit

40

~ffi

'" '"

60

U'

40

w

N

30

~§

20

w@)

10

-:I:
...~

*

70

50

ZO

C

-ALL SERIES

90
80

~~

>-0

..:::::: :::::fl

20

1.4

a
1,000

100

10

2 3 4 6 810K
lOOK
1M
FREQUENCY (Hz) -HALF WAVE RESISTIVE LOAD NO FILTER

1K

CYCLES AT 60 Hz HALF SINE WAVE

Reverse Pulse Power vs Pulse Duration

Forward Pulse Current vs Pulse Duration
10,000

g
z0-

1,000

F' ,LI !'.I
t"-

100,000
ES

fo~ ~!"~••

;j:.ii'i$.

1(8.3t::'~' ~~esCiua~e~~~~~lellll

.11

'wit"

'"'"

'"

0

::0

Go
W
VI

U

...'"::0

III

!

...::0

100

Q.

Go

10

l~s

10.s

l00~!

1,000

100

10
1m!

10m!

lOOns

1..

10.5

lOa.!

1m!

10m!

PULSE DURATION (SECONDS)

PULSE DURATION (SECONDS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10,000

6-142

PRINTED IN U.S.A.

UT2005-UT2060
UT3005- UT3060
UT4005-UT4060

RECTIFIERS
Standard Recovery, 2 Amp to 4 Amp

FEATURES

DESCRIPTION

•
•
•
•
•

High average power and surge capability
make these series of devices attractive
in many high-rei applications.

Continuous Rating:to4A
Controlled Avalanche
Surge Rating:to IOOA
PIV: to 600 V
Miniature Package

All Unitrode rectifiers have a sleeve of
pure hard glass fused to the silicon junction. Since the silicon sees only this glass,
electrical characteristics are permanently
stable. This voidless, monolithic package
is totally unaffected by the most severe
moisture or temperature testing.

ABSOLUTE MAXIMUM RATINGS
2 Amp
Series

3Amp

4Amp

Peak Inverse Voltage

Series

Series

SOV
100V
200V
400V
600V

UT200S
UT2010
UT2020
UT2040
UT2060

UT300S
UT3010
UT3020
UT3040
UT3060

UT400S
UT4010
UT4020
UT4040
UT4060

Maximum Average D.C. Output Current
@ TA = 2S·C
@ TA
lOO·C .
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating Temperature Range
Storage Temperature Range
Thermal Resistance

=

2AMP
SERIES

3AMP
SERIES

. 2.0A ..

. 3.0A.

4AMP
SERIES

...... 4.0A
......... 2.0A

1.0A

I.SA ..

.60A

80A ..
-19S·C to +17S·C
-19S·C to +200"C
See lead temperature derating curve

... lOOA

MECHANICAL SPECIFICATIONS
UT200S-UT2060 UT3005-UT3060 UT4005-UT4060

BODY B

Part Identification: Orange band indicates !lUT." Part
number printed on body.
Polarity: Denoted by orange band.
Weight: 0.75 grams, typical.

6-143

~UNITRDDE

•

UT2005-UT2060

UT3005-UT3060

UT400S-UT4060

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Maximum Leakage
Current @ PIV

IV@3A

Sp.A

IOOp.A

UT300S
UnOIO
UT3020
UT3040
UT3060

SOV
IOOV
200V
400V
600V

IV@2A

Sp.A

IOO"A

UT200S
UT2010
UT2020
UT2040
UT2060

SOV
IOOV
200V
400V
600V

IV@IA

S"A

IOO"A

I
~

z

0:

::>

u

o

"'u:

;: 2

lil0:

"'

Maximum Current
Lead Temperature

3.5

""l

~

:Ii

0:

'"

~ I

~
~

0

50
T, -

75

100

125

150

L

04

lil0:

"'u:

l

= W'"

L

~,:--

~="

"'

i"----

"

~2

"I 1

0

175

LEAD TEMPERATURE ('C)

~

'{

"'>

~

.2

u

1.5 II

'~ ~

"I

::>

;:

_....

f"--- "- ~

""

0:

'"'"
®

2

~

'" '"

z

~=r~

\"L
\l

= Va"

l

:;!5
2.5~

YS

3AMP SERIES

_6

:;.

L=!> ""
1'--,..,... I"'"

Maximum Current
Lead Temperature

YS

2 AMP SERIES

l = 1/8"

25

100'C

PIV

SOV
IOOV
200V
400V
600V

Maximum Current
Lead Temperature

:;! l

25'C

Type

UT400S
UT4010
UT4020
UT4040
UT4060

YS

~

Maximum Forward
Voltage Drop

4

25

SO

~

TI -

100

125

6

"'0:0:

::> 5

i'~)~)l\
~

u
0

4

II

~

"'0:
"'

3

u

"">
"'
"I

~

2

f"'-...

~ ~

i"'-.

1'\\
'-L\
l"--,

.2

hl

~

175

~

(~C)

SO
T, -

6-144

~

1'\
'
"
1"'- \
1~!~4"

25

UN)TRODE CORPORATION, 5 FORBES ROAD
LEXIN.GTON. MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

4AMP SERIES

1"-

0:

~
.~

ISO

LEAD TEMPERATURE

2

z

"';:u:

.....

" "I"
"""" " "-1\

75

:Ii

'"'"
®

~

"

'"

-.
0

\1,"

75

100

125

ISO

175

LEAD TEMPERATURE ('C)

PRINTED IN U,S.A.

UT2005-UT2060

Typical Forward Current
vs Forward Voltage
10

10

3 AMP SERIES

I

5

II II III

.5

:i"'

~

Il.~U 8~r
;,

.1

II I

I
_~.02

.01

.001

.2

I

.002

/

~

Z

"'~

.4

.6

VOLTAGE (V)

.8

1

1.2

1.4

2

:::>
0.05
.!: .02

I-

U

f'\J

'"'":::>'"
0

0

."

II

.005

/
.2

I

II
I

1.2

1A

V

:SO"C

"'
'">'"
"''"

.1
.2

.E_

----

.5

---

II)

I

/

.01

.001

!.J

"'"

,I /

I

.002

.:;

Z

~U

•
~
1
VOLTAGE (V)

.os
:;(

/~ fA"' 0
-I- -I- -1-/'
....,

A
V, -

I

I

I

ALL SERIES

.01
.02

/ I III

.1

I

II

Typical Reverse Current vs PIV

/V

4 AMP SERIES

.2

/

.001

V, -

.5

II

.005

II I1I1
5

/

.01

/

Typical Forward Current
vs Forward Voltage
10

II I

I
.;;.02

!/

1/

-I- -I-

o.os

i/

•

£~§t~~
+ I

.1

:::>

/

II

.005
.002

~r7

1- :;:

:::>
0.05

Z .2

"'~

00

AI
III III1

II/ I1I1

5.5

~

Z .2

UT4005-UT4060

Typical Forward Current
vs Forward Voltage

//

2 AMP SERIES

UT3005-UT3060

10
20

so

--

100
200

I

/

500

2S"C

./

7S"C

/'
12S"C

1,000

.4

.6

.8

V, -

VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1

1.2

ISO

1.4

6-145

100
SO
% OF PIV

o

PRINTED IN U.S.A.

UT200S-UT2060

UT300S-Un060

UT400S-UT4060

Allowable Forward Surge vs Number of Cycles
100

"
'"'"
~
:J
'"

z
>=

I~

80

ALL SERIES

~

11111

I&..

60

~

III

0

'"u::

~ ....;

40

U

'""-

III

Turret Ih" centers
Printed Circuit

--- -::.t
~

20

LL

I I

+ulr~~~ I" c~nte~s

0

'if
1,000

10
100
CYCLES AT 60 Hz HALF SINE WAVE

Forward Pulse Current vs Pulse Duration
10,000
. ~~Ise_c~r~~~~:sp=

~
z

....

'"'"
'":J
'"'"...J

(8.3 msec sine wave equivalent
to 3 ms square wave)

1,000

U

r---...

100

:J

"-

10
1":5

.1u.s

10{l.s
100u.s
Ims
PULSE DURATION (SECONDS)

lOms

Reverse Pulse Power vs Pulse Duration
100,000
ALL

~

RI

10,000

'"'";:
0

"-

1,000

'"

III
...J

:J

"-

100

10
lOOns

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

l.s

lO,us
Ims
100.s
PULSE DURATION (SECONDS)

6-146

lOms

PRINTED IN U.S.A.

UT51 05· UT5160
UT6105·UT6160
UT8105·UT8160

RECTIFIERS
Standard Recovery, 7.5 Amp to 12 Amp

DESCRIPTION
These series of high current rectifiers
offers opportunity for size and weight
reduction in high power supplies.

FEATURES
• Rating: 12A
• Controlled Avalanche
• Miniature Package
• Surge Rating: 200A

II

ABSOLUTE MAXIMUM RATINGS
12 Amp

SAmp

7.5 Amp

Peak Inverse Voltage

Series

Series

Series

50V

UTB105
UTBllO
UTB120
UTB140
UTB160

UT6105
UT6110
UT6120
UT6140
UT6160

UT5105
UT5110
UT5120
UT5140
UT5160

lOOV
200V
400V
600V

12 AMP
SERIES

Maximum Average D.C. Output Current

=

12.0A.....

@ Tc
l00"C .
Non-Repetitive Sinusoidal
Surge Current (B.3ms)
Operating and Storage Temperature Range .
Thermal Resistance, Junction to Case .
Current Derating.

S AMP
SERIES

.................. 9.0A....

7.5 AMP
SERIES

7.SA

....... . ...... . 200A.....

... ..... 175A........ ............ lS0A
........... -65"C to +175"C .. .
................. 7.S"C/Watt .... .
......... See current vs. case temperature curve

MECHANICAL SPECIFICATIONS
UT5105-UT5160

UT6105-UT6160

"J

.187" MAX.

.045" TYP .

.005 MAX.

(475mm)

(O.l1mm)

Radius

.460" MAX:----oI~

.112 MAX. \

1(1l.68m~

UT8105-UT8160

BODY C - Stud Mount

,187" HEX.
(4.75mm)
)..

1/

·~;II~?-./,
230" (584mm)
#4·40 )( :250" (6:34mm) LONG THREAD

.120" TYP.
(3.0Smm)

Part Identification: Numerals and polarity letter indH:ate
"UT" type numberj e.g., 8105R.
Polarity: Cathode to Stud is standard. Reverse polarity
denoted by uR" Suffix.
Finish: Metal parts gold plated per MIL-G-45204, Type II.
Max. Weight: 1.5 grams.
Also available with insulated stud. Reference Design Note·17.

Installation
Maximum unlubricated stud torque: 28 inch-ounces.
Insulating hardware supplied.
Do not use a screwdriver in the turret slot for installation purposes. or damage may result.

6-147

~UNITRODE

UTSlOS-UTS160

UT6l0S-UT6H;OUT8l0S-UT8l60

ElECTRICAL SPECIFICATIONS (at 2~ C unless noted)

Type

Peak Inverse
Voltage

UT810S
UT8110
UT8l20
UT8l40
UT8160
UT610S
UT6110
UT6l20
UT6l40
UT6l60
UTSlOS
UTSll0
UTS120
UTS140
UTS160

SOV
lOOV
200V
400V
600V
SOV
lOOV
200V
400V
600V
SOV
lOOV
200V
400V
600V

Max. Reverse
Current at PIV

Maximum Forward
Voltage

25°C

100°C

lV@8A

1OI'A

300l'A

lV@6A

1OI'A

3OOl'A

lV@SA

lOI'A

300"A

Typical ForwardVoltage
vs Forward Current

Typical Forward Voltage
vs Forward Current

10,000 r---r--,----r--r77-.--;ro-----;

10,000

f-----j----'-+--+--,¥H'--+---i

5,000

.e

2,000

~

!z

1,000 f---t-+-+-IIf-f+l~+---t---1

I- 1,000

5,000

<:
~

500

u

200 f--+-+--f-!,rf-*-+--+---1

0:

0:
::J

c

~
0:
~

2.000

Z

"'

f---+-+t'--ll'r-l-f-+--+-----1

500
200

100

0:
0:
::J
U
C
0:

so

0:

50

~

0

LL

20f--++-+-.H-+~-+--+---1

20

10L-~L-H-~LL-L_L-~~

a

.2

.4

.6.8
Vf

100

10

1.2

0

vorts

Typical ForwardVoltage
vs Forward Current.
10,000

<:

.§.

2,000

!z

1,000

"'~

500

~

200

0:

100

~

0:

~

50
20
10

<:

.:0
lZ

/ II I /

"'0:0:

II / I

::J

r-r--

f~O~U

~s ~ ~1~
"I[ I
:t ~ I I

.2

.4

.6

u

.8

.4

.6
.8
Vr:: Volts

1.2

Typical P.I.V. vs
Reverse Current

V/V/
~VjV
I I

7.5 Amp
5,000

.2

::J
U

"'

I

0:

"'

50'C

1L

.5
I

5
10

rJ)

"'>

~

.05
.1

SO

i

~c

100

J-.-

0:

+r

SOO
1000
150

1.2

V f Volts

6-148

25 ° C

soc

100
50
0/0 of P.l.V.

PRINTED IN U.S.A.

UT5105-UT5160

UT6105-UT6160 UT8105-UT8160

Current Rating vs Case Temperature
100

-r- r-+

1
1
1

..

.!:

~

+

1\

50

I
I

1"\

?f.

i

.

---

.-

o
o

J

100

200

II

Temperature <'C

Forward Pulse Current VS. Pulse Duration
1 0 K " " .

~
1::

1K

~

~

u

e:

:;

100

0.

1mS

10mS

Pulse Duration (Seconds)

Reverse Pulse Power vs. Pulse Duration
lOOK

~

10K

ij
~
0

1K

0.

~

:;
0.

100
10
.1.5

1.5

10.5

100.5

1mS

10mS

Pulse Duration (Seconds)

UNITRODE CORPORATION· 5 FORBES ROAD
LEX I NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-149

PRINTED IN U.S.A.

RECTIFIERS

UTRIO-UTR60
UTROI-UTR61
UTR02-UTR62

Fast Recovery, 0.5 Amp to 2 Amp
FEATURES
• Continuous Rating: to 2A
• Controlled Avalanche
• Surge Rating: to 25A
• Fast Recovery 40kHz Operation
• PIV: to 600V
• Miniature Package

DESCRIPTION
These miniature fast recovery rectifiers
permit operation at full frequencies as
high as 4JkHz square wave. They have
the unique Unitrode Fused in Glass con·
struction.

ABSOLUTE MAXIMUM RATINGS
V. Amp
Series

Peak Inverse Voltl,"

50V
lOOV
200V
300V
400V
SOOV
600V

1 Amp

UTRIO
UTR20
UTR30
UTR40
UTR50
UTR60

Maximum Average D.C. Output Current
@ TA = 25·C
@ TA = lOO·C ...
Non-Repetitive Sinusoidal
Surge Current (8.3ms) .
Operating Temperature Range
Storage Temperature Range .
Thermal Resistance
.................. .

2 Amp

Series

Series

UTROI
UTRll
UTR2l
UTR3l
UTR4l
UTR5l
UTR6l

UTR02
UTR12
UTR22
UTR32
UTR42
UTR52
UTR62

V. AMP
SERIES

2AMP
SERIES

1 AMP
SERIES

.... O.SA ... .
......................... O.25A .. .

............. 1.0A..
.......... O.SA.

... 2OA...

...... l5A.

... 2.0A
................... 1.0A

.. ........... 25A

..-195·C to +175·C ..
.. -195·C to +200·C ..
.. See lead temperature derating curves ..

MECHANICAL SPECIFICATIONS
UTR1D-UTR60

UTR01-UTR61

UTR02-UTR62

BODY A

Part Identification: Green band indicates IIUTR." Part
number printed on body.
Polarity: Denoted by Green band.

Weight: 0.26 grams, typical.

6-150

~UNITRDDE

UTRlO-UTR60

UTROl-UTR6l

UTR02-UTR62

ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
Maximum

Leakage
Current
@PIV

Maximum
Forward

Type
UTR02
UTRl2
UTR22
UTR32
UTR42
UTR52
UTR62
UTROl
UTRll
UTR2l
UTR3l
UTR4l
UTR5l
UTR6l
UTRlO
UTR20
UTR30
UTR40
UTR50
UTR60

Voltage
Drop

PIV
50V
looV
200V
300V
400V
500V
600V
50V
looV
200V
300V
400V
500V
600V
lOOV
200V
300V
400V
500V
600V

Maximum
Junction
Capacitance

Maximum
Reverse
Recovery

100·C

2S·C

l.lV @ lOoomA

3"A

loo"A

l.lV@500mA

3"A

lOOI'A

l.1V@200mA

3"A

lOO"A

@2S·C
10V
60pf
40pf
32pf
28pf
24pf
20pf
l6pf
60pf
40pf
32pf
28pf
24pf
20pf
16pf
40pf
32pf
28pf
24pf
20pf
16pf

oV
l50pf
lOOpf
80pf
70pf
60pf
50pf
40pf
l50pf
lOOpf
80pf
70pf
60pf
50pf
40pf
lOOpf
80pf
70pf
60pf
50pf
40pf

Time*

250n5
250ns
250n5
3OOn5
350n5
400ns
400n5
250ns
25On5
25On5
300n5
350n5
400n5
400n5
25On5
250n5
300n5
350n5
400n5
400n5

II

*Recovery time is measured from lO.OmA to lO.OmA recovery to 5.0mA

Maximum Current
vs Lead Temperature

...
z

u

o

~

"'u:

;::

u

I.!;,,:= ~4"

"'a:
"'

............
1

-

"'""" """"~

'-....

3

2

so
T, -

75

100

"'"

-

ISO

~
0:
0:

2.5 ~

0

2

:e

G2
u:"'
;::
:.l0:

"""'

@

1

1

"'
>

"I
..:?

175

.-<
II
~

.5

,-----,--,----,---------,,, 2.5

1.75

...z~
"'a:a:

f--+--+-+---'--'---1r- 1.5

::J

"l
n

1.25

'V

1

!;;l

.75

@

.5

"-<

u

'" 0
i'" "'u:

1.5 -

0:

~ ~-

125

@

15 II
. ~

~

25

...

.,'"~
2.5!

-

.............

"

I AMP SERIES

~
-f- 3.5

1.!;,.='Ia·~

::J

""a:
"'
>

2 AMP SERIES

-'i

"'a:a:

Maximum Current
vs Lead Temperature

1.5

I
I~=W'

~

Maximum Current
vs Lead Temperature

;::

u

"'0:
"'~

.5

.."'
0:

>

.25

~

!
II

~
n

.S!

25

50
TL

LEAD TEMPERATURE (-C)

-

75

100

125

175

ISO

LEAD TEMPERATURE (DC)

25

50
TL

-

75

100

125

150

175

LEAD TEMPERATURE ( C)

Reverse·Recovery Circuit

-

990Q

10V
D.C.

D.U.T.

+

10[1

+ 20V
' - - - - - - - - - - 0 D.C.o---------l
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6·151

PRINTED IN U.S.A.

UTRIO-UTR60

Typical Forward Current
vs Forward Voltage
10

10
1 AMP SERIES
/~

!;:.-:..

/: ~

...
'"~

r/J?~foU
-1--1-1

::;)

U.05

/

I
.,...02

.01
.005

I /

/ /

.001
.2

.4
V, -

.01

1.2

.2

1.4

'"0:0:

::;)

VV IV
/

II

.05

...3

'"0:0:

I

~

8g;

~!~+

.02
.01

II

.005

1

.002

III

'"0:
'"
>
'"

I

~'C

.5

'"C

./

10
20

75'C

0:

II

50
100
200

/

V

500
\,000
ISO

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

1.4

.05
.1
.2

If)

~

1.2
.4
.6
.8
V, - VOLTAGE (V)

1.2

U

.001

.2

.6
.8
I
VOLTAGE (V)

::;)

h!oJ !oJ SJ /}

u

.,..I

:<
Z

I II

J

.4
V, -

ALL SERIES

.01
.02

1/" ~/'

.1

!I

Typical Reverse Current vs PIV

0.5 AMP SERIES

...Z~

/

I

II

.00\

Typical Forward Current
vs Forward Voltage

.2

I

.002

.6
.8
I
VOLTAGE (V)

.5

II

.005

J

I-r-

j /

I
.,...02

/ / /

.002

-I- -I- -I- 1

U.05

I

,U ,U ,U

:::: ~ /Q SI-

.1

::;)

I I
/ I

/

VV II

I:,U

Z .2

$~/(J~

.1

///

~ .5

/'1

.2

'"

/'

'/ '/

~ .5

'"~

UTR02·UTR62

Typical Forward Current
vs Forward Voltage

2 AMP SERIES

2

...Z

UTROI-UTR61

100

50

12S'C

o

% OF PIV

1.4'

6-152

PRINTED IN U.S.A.

UTR10-UTR60

Efficiency vs Frequency at Rated Current (Sine Wave)
100
I/)

90

-I-

1- ...
::lO

80

::l'"

70

t?ffi

60

l!:>

0"

,p.>
>-U

40

~ci
... N

30

!.!o
,,-0

20

... @

10

-:I:

Allowable Forward Surge vs Number of Cycles

ALL SERIES
80

I'
60

f---+-++l-H-ttI~~~k:-H

20

2

3 4

6 810K

lOOK

10
100
HALF CYCLES Of 60 Hz SINE WAVE

1M

...

1,000

100,000
ALL SERIES

Square Pulse Current vs
Duration for Non-Repetitive Pu Ise
(8.3 ms sine wave equivalent
to 3 ms square wave)

..........

~

...;:

.....
.....
0

::l
11

"l
L--~~
__

4

3,,,

I'\.

['---...

.

0

4

""

~

~

.............

3

~f'"

:J
0
0

'" ..,
@ .:

L='1>

i= 2

3 ,"
II

"- '\.

~

'" "
""
~

2

50
75
100 125
ISO
175
T, - LEAD TEMPERATURE (OC)

..,0a:

i'----..r-.,.

..,

..

~ "a:

2 AMP SERIES

II

~ 1

I

--

3.5

2.5

'\,..

2

SO

25

T, -

~:0

,"

1.5 II

...
~

""'~ ~

1

75
100
125
150
LEAD TEMPERATURE (OC)

~

.5

~

0

(!l
@

"" .""~

'-......

.

r\

""'-.. l'\.\
~

25

:E

Z

:;!

a:

:0

~

:2

"'-\\

L=~,,,
""'l

5
I-

L __ 'Ie" "-

0

"'- "- \\.\

.9 1

5

a:

:J

~

..

'"

Z

:;!

""

600pf
400pf
320pf
240pf
200pf
160pf
600pf
400pf
320pf
240pf
.2oopf
160pf
600pf
400pf
320pf
240pf
200pf
160pf

Maximum Current
vs Lead Temperature

L:::: Ifs"

I-

"

-IOV

250n5
250n5
250n5
400n5
400n5
400n5
250n5
250n5
250n5
300n5
350ns
400n5
250n5
250n5
250n5
3OOn5
350n5
4oon5

3 AMP SERIES

_6

5-

~~)"r-...

OV

Maxi mum Current
vs Lead Temperature

\I
I\,.

;;

@25'C

Time*

a.SA.

Maximum Current
vs Lead Temperature
V,"

100°C

l.lV@4A

*RecQvery time is measured from lA to lA recovering to

Maximum
Junction
Capacitance

Maximum
Reverse
Recovery

o

175

50
75
100
125
150
175
T, - LEAD TEMPERATURE (OC)

Reverse Recovery Circuit
5V
D.C.

_

0----------------,
+
SCOPE

.-----'V'IAr-------D+------"'VIA,...----~HI·

+

L----------------o
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

10V
D.C.

0----------------'

6-155

PRINTED IN U.S.A.

UTR2305-UTR2360 UTR3305-UTR3360 UTR4305-UTR4360

Typical Forward Current
vs Forward Voltage
10

10

V~

/

4 AMP SERIES

Typical Forward Current
vs Forward Voltage
3 AMP SERIES

'/ (/
~ .5

...
"'~

/

.1

u.OS

II /

I
.!'-.02

/

.005

"'~

I II

.2

.4
V, -

.01

.002

1.2

.2

1.4

Typical Forward Current
vs Forward Voltage
10

...z
"'

0:
0:
:l

~lI
i-!$~
"i- i-

.!'-.02

.002
.DD1

I

1/
.2

.5

"'
II>

0:

"'>

"'
0:

1/

I

.01
.005

.2

0

.1/ 1/

I

.3

0:
0:
:l

II
.4
.6
.8
I
V, - VOLTAGE (V)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

vs PIV

50'C

l---':':

25'C

L
rt-'

·2
10
20

--

t-'

50
100
2DD

L
7S'C

L'
j...../12S'C

150
1.2

1.4

_~

SOD
1,0DD

I

1.2

.05
.1

Z

...
"'

IAo,ooo

.1

0.05

•

:<

/[1

V

.2

.6
.8
1
VOLTAGE (V)

.01
.02

1/1/ 1/1/

II

.4
V, -

II

Typical Reverse Current

Vvv

2 AMP SERIES

~

If

.001

.6
.8
1
VOLTAGE (V)

/
I

.005

I

.5

II

I
.... 02

/ I

(J

I-f.~~~l
i- +. I

.1

0.05

/ II

CJ

oC,) o()

:l

/ 1/

1/

II

Z .2

/ /

.01

i~

.5

....

u u

:l

.DD1

5:

L~J
!J5J
J& i-~ !~/+
/ii- I

Z .2

.002

VIL LV

ILL ~/

/ /
III II j

100

SO

% OF PIV

1.4

6-156

PRINTED IN U.S.A.

UTR2305·UTR2360 UTR3305·UTR3360 UTR4305 ·UTR4360

Elficiencyvs Frequency at Rated Current (SineWave)
100

en
...

90

olO

80

~

"'-

... ...J

::>

OlW

...0"
015'"

Allowable Forward Surge vs Number of Cycles
100

-.........

ALL SERIES

70

">=z
'"a:
"a:ol
en
"

"'

50

>-U

40

-=c::;

N

30

W

!do
... 0

20

w@

10

...en0

~

60

'" ~

20

100
10
CYCLES AT 60 Hz HALF SINE WAVE

Reverse Pulse Power

Forward Pulse Current vs Pulse Duration

YS

1,000

Pulse Duration

100,000

~

ALL SERIES

ALL SERIES

Square Pulse CUrrent vs
Duration for Non-Repetitive Pulse
(8.3 ms Sine wave equivalent
to 3 ms square wave)

~

1,000

Square Pulse Power vs
DUration for Non-Repetitive Pulse
(8.3 ms sine wave equivalent
to 3 ms square wave)

10,000

a:
W

W

!:

a:
a:

0

0..

ol

u

100

1111

1,000

W

en

........

W

~

tl

r--::::: :J...

;11

10,000

...

I

I--

40

1M
lOOK
1K
2 3 4 6 810K
FREQUENCY (Hz) -HALF WAVE RESISTIVE LOAD NO FILTER

~
z

rYr'iiII

Turret 1" centers-~
Turrel 1f2" cenlers-=~
Printed Circuit ----;'

"-

... 0

1111

I

W

u"
Z"
W

-:I:

II

r-...

W

60

~~

~

80

b

...J

ol

"-

ol
0..

100

10

10

.1,u5

1,us

10,us

1oo.us

Ims

lOms

PULSE DURATION (SECONDS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

6·157

lOOns

l,us

IOtlS
lOO,us
Ims
PULSE DURATION (SECONDS)

IOms

PRINTED IN U.S.A.

II

RECTIFIERS

UTR4405·UTR4440
UTR5405·UTR5440
UTR6405·UTR6440

Fast Recovery, 6 Amp to 9 Amp
FEATURES

DESCRIPTION

•
•
•
•
•
•

The same basic construction as all
Unitrode diodes, but using a miniature
stud mounting and larger junction area,
provides a 9 Amp continuous and 150
Amp surge rating in a package only one
fifth the weight and one quarter the
volume of conventional types.

Continuous Rating: to 9A
Controlled Avalanche
Surge Rating: to 1SOA
Fast Recovery, 40kHz Operation
PIV: to 400V
Miniature Package

ABSOLUTE MAXIMUM RATINGS
9 Amp

& Amp

7.5 Amp

Peak Inverse Voltalle

Series

Series

Series

SOV
100V
200V
400V

UTR4405
UTR4410
UTR4420
UTR4440

UTR5405
UTR54l0
UTR5420
UTR5440

UTR6405
UTR6410
UTR6420
UTR6440

6AMP
SERIES

Maximum Average D.C. Output Current
@ Tc = lOO'C .
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating Temperature Range
Storage Temperature Range .
Thermal Resistance

6.0A
...... 120A...

7.5 AMP
SERIES

.. 7.5A

9.0 AMP
SERIES

. 9.0A

.. ............... 135A..
.. 150A
. -195'C to +175'C ..
.-195'C to +200'C .
... 7.5'C/W ............................ .

MECHANICAL SPECIFICATIONS
UTR6405·UTR6440
.187" MAX.

#4-40 x

UTR5405-UTR5440

UTR4405-UTR4440

BODY C - Stud Mount

.045" TYP,

:~;g: ~~:~:~~~ LONG THREAD

Part Identification: Numerals and polarity letter indicate
UTR type number, e.g., UTR 4405.
Polarity: Cathode to Stud is standard. Reverse polarity
denoted by IIR" suffix.
Finish: Metal parts gold plated per MIL-G-45204, Type II.
Wei,ht: 1.5 grams, typical.

Also available with insulated stud. Reference Design Note·l7.
Installation
Maximum unlubricated stud torque: 28 inchaounces.
Insulating hardware supplied.
Do not use a screwdriver in the turret slot for installation purposes, or damage may result.

6-158

~UNITRDDE

UTR4405·UTR4440

UTR5405·UTR5440

UTR6405·UTR6440

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

Type

PIV

UTR6405
UTR6410
UTR6420
UTR6440
UTR5405
UTR5410
UTR5420
UTR5440
UTR4405
UTR44l0
UTR4420
UTR4440

50V
lOOV
200V
400V
SOV
lOOV
200V
400V
SOV
lOOV
200V
400V

Maximum

Maximum
Forward
Voltage
Drop

25'C

100'C

1.lV@6.0A

lOpA

300pA

1.lV@5.0A

lOJlA

300JlA

l.lV@4.0A

lOJlA

300JlA

Reverse
Current @ PIV

Maximum Reverse
Recovery Time*

300n5
300n5
400n5
500n5
300n5
300n5
400n5
SOOn5
300n5
300n5
400n5
SOOn5

*Recovery time is measured from lA to lA, recovering to O.SA.

Typical Forward Voltage
vs Forward Current

Typical Forward Voltage
vs Forward Current
30,000

I

20,000
10,000

I-

+175'~t.

+100'C

2,000

UJ

1,000

()

I

::t
oS

+25'C

500

200

1,000

zUJ

-SO'C

0:
0:

III

SO

/ /

.2

.4
IF -

II

20

.6

.8

1.2

1.4

.2

VOLTAGE (V)

10,000

::t
oS
I-

zUJ

0:
0:

1,000

200

I

100

-"

SO

20

~

UJ

0:
0:

:>

~
lQ

50
0: 100
200

I

ISO

100

./
25'C

./

75'C

./
125'C

I

SO
% OF PIV

II

.8

--

500
1.000
2.000

I I
II I
.6

--

~

II

.4

5
10
20

UJ

// II

IF -

.---

z

/ /

.2

50'C

I-

II / / /

10

1.4

.2

.3 .5

,4---50'C

'/ 'j

500

:>

()

IJ '/

1.2

1

.05
.1

+175'~~ ~25'C
+lOO'C-

2,000

I
.6.8
VOLTAGE (V)

ALL SERIES

.02

~/

6 AMP SERIES

.4
IF -

Typical Reverse Current vs PIV

Typical Forward Voltage
vs Forward Current

5,000

I

50

I 1/

30

1//

/

100

i/

V

;/; !1 ~

200

-"

LVi
1// /

~ & ~(J
A~()
~

()

/I

100

/

SOD

:>

III I I

-~

2,000

I-

// /

:>

~ V~

5,000

'IL !I

1/ Ifr

Z

0:
0:

10,000

II II

5,000

11 ~

7.5 AMP SERIES

0V

9 AMP SERIES

::t
oS

20,000

V//

1.2

1.4

VOLTAGE (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95·1064

6·159

PRINTED IN U.S.A.

II

UTR4405·UTR4440

Reverse Recovery Circuit

+

(/)

90

::>0

80

::>UJ
0"

70

~~

50

-II-..J

~>

SCOPE

~ffi

ALL SERIES

I"

60

>u

40

UJ N
-:t

30

~o

III

D.U.T.

4!!

~g
...UJ@I

20

~

10

+
~---------------o~~.o---------------~

lK
2 3 4 6 810K
lOOK
1M
FREQUENCY (Hz) -HALF WAVE RESISTIVE LOAD NO FILTER

Current Rating vs Case Temperature

Forward Pulse Current vs Pulse Duration
10,000

100

i"\

ALL SERIES

Square Pulse Current vs
Duration for Non-Repetitive Pulse

"\.

5

~

I-

z

\

"z
a:

UTR6405-UTR6440

Efficiency vs Frequency at Rated Current (Sine Wave)
100

5V
D.C.

UTR5405-UTR5440

UJ

a:
a:

1"\

50

.......

::>

r\.

oC!

(8.3 msec sine wave equivalent
""-'
to 3 ms square wave)

ALL SERIES

1,000

<>

UJ

100

(/)

..J

::>
Q.

"\.
40

60

80

100

140

120

160

TEMPERATURE ('C)

'"

180

10
l,us

.1,u5

200

10.u5

1ms

100~s

lOms

PULSE DURATION (SECONDS)

Reverse Pulse Power vs Pulse Duration
100,000
Square Pulse Current vs
Duration for Non-Repetitive Pu Ise

!a:

10,000

0

1,000

'"~

II.

111111Ir-ALL SERIES

(S.l msec sine wave equivalent
to 3 ms square wave)

r-...

1111

11111

1111

100,u5

Ims

'"..J
(/)

::>

II.

100

10
lOOns

l.u.s

laps

10ms

PULSE DURATION (SECONDS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-160

PRINTED IN U.S.A.

RECTIFIERS

UTX l05-UTX125
UTX205-UTX225

Ultra-Fast Recovery, 1 Amp and 2 Amp
FEATURES

DESCRIPTION

•
•
•
•
•

These miniature ultra-fast recovery
rectifiers permit operation at full power at
frequencies as high as 100kHz square
wave. They may be used as half wave
rectifiers or as legs of a bridge.

Continuous Rating: to 2A
Controlled Avalanche
Surge: to 25A
Recovery Ti me less than 75ns
Miniature Package

•

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

50V
lOOV
150V
200V
250V

1 Amp

2 Amp

Series
UTXI05
UTX110
UTXll5
UTXl20
UTX125

Series
UTX205
UTX2I0
UTX215
UTX220
UTX225

Maximum Average D.C. Output Current

@ TA == 25°C
@ TA == 100°C
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating Temperature Range
Storage Temperature Range
Thermal Resistance .

1 AMP

2AMP

SERIES

SERIES

... l.OA
... O.5A.

.2.0A
...... 1.(}A

.... 20A..
. 25A
-195°C to +175°C ...
..... -195°C to +200°C
See Lead Temperature Derating Curve .

MECHANICAL SPECIFICATIONS
UTX105-UTX125

UTX205-UTX225

BODY A

Part Identification: Green band indicates "UTX." Part
number printed on body.
Polarity: Denoted by green band.

Weight: 0.26 grams, typical.

6-161

~UNITRODE

UTX105'UTX125.

UTX205-UTX225

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Leakage Current
@PIV

Maximum
Type

PIV

UTX 205
UTX 210
UTX215
UTX 220
UTX 225
UTX 105
UTX 110
UTX 115
UTX 120
UTX 125

50V
100V
150V
200V
·2SOV
50V
100V
lSOV
200V
250V

Max. Reverse
Recovery

Voltage
Forward Drop

25'C

100'C

Time*

1.0V@lAdc

3p.A

SOp.A

75n5

1.0V @ 0.5 Adc

3p.A

50p.A

75ns

*Recovery trme IS measured from lO.OmA to lO.OmA recovery to S.OmA.

Maximum Current
vs Lead Temperature

Maximum Current
vs Lead Temperature

1 AMP SERIES

~

I-

'"a:a:

"'a:a:

ao

2

L

2.5

= Va"

'"

:e~
!:l

o

~

>=

U

II

~

1

«
'"'"

~

1.

(')

~

a:

a:

'">
«

.5

"'

~
I

I

I

o

o
25

50
Tl -

75
100
125
150
175
LEAD TEMPERATURE ('C)

Reverse Recovery Circuit

25

100

en

-I1- ...

10V D.C.

+
Scope

80

::>'"
0'"

70

~ffi
~~

>-u

U·

~+ .5

"\

50
75
100
125
ISO
175
T, - LEAD TEMPERATURE ('C)

ZO

ALL SERIES

SO
40
30

~o

20

"'@

10

-:I:

~

·60

",-

... 0
... 0

I

1M
IK
2 3 4 6 810K
lOOK
FREQUENCY (H,) --HALF WAVE RESISTIVE LOAD NO FILTER

=

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 ' TEL. (617) 861-6540
TWX (7l0) 326-6S09 ' TELEX 95-1064

90

::>0

e:>

9901l

lOll

, "'"-"~
~

Efficiency vs Frequency· at Rated Current (Sine Wave)

UZ 840

lKIl

20V D.C.

~

............

.2

.2

+

,~4"

"'
a:

...

a:

~ "\

"'

ii:

.:-..:::-t---j---j---j--L1.5~:-l

4

-~=%'~

::>

U

(e)

ii:

'"~

~

Z

Z

2 AMP SERIES

L:::::. Jfa"

~

I-

6-162

PRINTED IN U 5.A.

UTX205-UTX225

UTX105-UT~125

Typical Forward Current
vs Forward Voltage

Typica I Leakage Current vs. PIV
10

ALL SERIES

.001
.002

Z

::J

u

w

I:

w

U.05

I

0::

I

./

_".02

l----+75'C

.01

I

10
20

I

.002

150

100

50

2

% OF PIV

A

V, -

~

....z

lK

ALL SERIES

r---

Square Pulse Current vs
Duration for Non·Repetitive Pulse
(8.3ms sine wave equivalent
to 3 rns square wave)

.001
.2

lA

II

II

/

II

.4

.6

V, -

VOLTAGE (V)

.8

I

1.2

1.4

~+fllmll=:ffl:mm
Square
CUrrent vsPulse
~
Duration
for Pulse
Non-Repetitive

!

(8.3 ms sine wave equivalent
to 3 ms square wave)

10K

0:

w

w

~

0

0-

U
..J

II

.002

11

J.1

Reverse Pulse Power vs Pulse Duration

0::
0:

'"

II

.005

12


w

~~

,IV, '/

~ iLL'

50'C

I

I--

2AMP SERIES

..--:;;:: ~

1....--

.05
.1
.2

w

0::
0::

10

1 AMP SERIES

.005
.01
.02

:;
.3
....

Typical Forward Current
vs Forward Voltage

lK

w

'"::J

100

..J

::J

0-

0-

100

.J'i.l.llIl

II 11111

lD
IttS

II 11m

lOO~s

lO,us

Ims

10

lOms

l.us

lOOns

PULSE DURATION (SECONDS)

lO~IS
100.(15
1ms
PULSE DURATION (SECONDS)

10ms

Allowable Forward Surge vs Number of Cycles
100

"z
~
0:

I~l'

JJUll

80

II1111

0:

::J

60

'"C

w

u:

U
W

I

I

I

Turret I" centers-

W

"

ALL SERIES

J_Ll

40

1--t-++t+l-lf~~~~I:::~-+-1 Tur~~:~:~~ C~i~~e.:;~ -...:

r

~

0-

'"...
o

20

=
~

I

'"

~=W'

0:

~

W

""
~
"

Z

-

I

0:

0:

I'\.

:::l

4

'\
1'\

3

'\

1""'-

0

0

:E

'":0

ii:

®

>=
u

\
""'- 1"\.\
~
K '\ 1\

2

4

W

W

.......II

""
>
"I

~

"" "-'"

I"---.

2

0:

-...........

W

1

-

I"-. 1\\
f'..\\

25

~

25

"i

~J'4"

W

0:

"-I

""

L='li!" "-

U

."

= Va"

'"

Z

W

'\

~

L

I-

1~_3(8"

5

II

Maximum Current
vs Lead Temperature

Maximum Current
vs Lead Temperature

50
T, -

r"-.

"-

"""'"

I'\.
'\

"\ 1\

"'"L"\.\~

75
100
125
150
175
LEAD TEMPERATURE (OC)

50
75
100
125
150
175
T, - LEAD TEMPERATURE (Oe)

Efficiency vs Frequency at Rated Current (Sine Wave)

Reverse Recovery Circuit
100
5V
D.C.

IJ)

+
SCOPE

;:~
:::lo

eo>
:::lw
0"

~ffi
.,>

~-u
4~!

D.U.T.

~c

+

80
70
60
50
40

w N
-J:
~o

30

LU@

10

,,-0
,,-0

20

lK

10V 0 - - - - - - - - - - - 1
D.C.

UNITRODE CORPORATION ° 5 FORBES ROAD
LEXINGTON, MA 02173 ° TEL. (617) 861-6540
TWX (710) 326·6509 ° TELEX 95-1064

ALL SERIES

90

2

3 4

6 8IOK

lOOK

1M

FREQUENCY (Hz) - HALF WAVE RESISTIVE LOAD NO FIL fER

6-165

PRINTED IN U.S.A

UTX 3105-UTX 3120

Typical Leakage Current vs PIV
ALL SERIES

.01
.02

=<

.3
I-

z

UJ

a:
a:

I

.05
.1

I
1./

.2

-

:::l

UJ

a:

1

OJ

V75°C

en

10
20

-

50
100
200

SOO

...,

u .05

I

I

"'" .02
.01

I

.005
.002
.001

...,

u

U

'"

(J

II
.2

.4
VF

11

~.02

II 1

.01

il

.005
.002

1/

.001

.6
.8
1
VOLTAGE (V)

-

.05

I

II

I

1.2

Forward Pulse Current vs Pulse Duration

uu

IS -t-~!~/~
.,.
-t- J

~ .1
:::l

II

1/

~u ~

Z .2

j

I

II II III

.5

UJ

11'1

II I

125°C

100
50
% OF PIV

ou

5:
I-

Ik
.,. .,.~f~t
.,. I
II 1 II

:::l

1,000

ISO

~u

.2

~ .1

V

'/

3 AMP SERIES

il/ /1

1
1
II Ii II I

~ .5

...Z

10

Vi/ /

r-

.5

Typical Forward Current
vs Forward Voltage

V

4 AMP SERIES

___ 25°C

(J

>
UJ

10

sooC

UJ

a:

Typical Forward Current
vs Forward Voltage

./

UTX 4105-UTX 4120

1.4

2

I J

II
1
.4
V, -

ll.II

•
~
1
VOLTAGE (V)

12

1.4

Reverse Pulse Power vs Pulse Duration

10,000

100,000

1:::=

ALL St;RIt;S

.+?. .'!..u~!: Non-Repetitive
Pulse Power vs
Pulse

DUration
(S.3 ms sine wave equivalent
to 3 ms square wave)

5:
~

~

1,000

a:

UJ

UJ

;:

a:
a:

~

:::l

(J

1,000

UJ

'"

UJ

~

(8.3 ms sine wave equivalent
to 3 ms~square wave)

10,000

oJ

100

:::l

:::l

Il.

Il.

10

100

III

10
. 1fJS

l.us

lOps

lOOp.s

Ims

lOms

lOOn •

IpS

PULSE DURATION (SECONDS)

IOttS

100,u5
Ims
PULSE DURATION (SECONDS)

lOms

Allowable Forward Surge vs Number of Cycles
ALL SERIES

I I
~~r~~: 1" c~nte~.

111111
UJ

"~

I
60

'"o

I--t--+-++++++I~~-...;::;;~~i<:-+f?-I Tur~~:n~~~ c;i~~~~

UJ

ii:

40

I

~

r--=

8
Il.

~

20

'0

10
100
CYCLES AT 60 Hz HALF SINE WAVE

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

6-166

1,000

PRINTED IN USA.

HIGH VOLTAGE RECTIFIERS, RECTIFIER
MODULES & MULTIPLIERS

7-1

7-2

PRODUCT SELECTION GUIDE

HIGH VOLTAGE RECTIFIERS
& RECTIFIER MODULES

s~
g

~

DG

SA-SM
STANDARD RECOVERY

AVERAGE D.C. OUTPUT CURRENT

.100•.25OA
1.0kV.

.250.5OA

.50-

.75·

lA

.75A

HVElO

1·

1.5A

2.5-

1.52A

5f\

5·
SA

67A

SXSlO
SL

SJ
HSlO

SK
lN3643

SJ
(USl2)
SA

. f.¥, ,
I'· ',.

HSl5

SXSl5
SL
(USl5)
SA

KXSl5
SM

(US20)
SA

SXS20
SL

KXS20
SM

HS25

(US25)

SK

S8

SXS25
SL

SK
HVEl5

SJ
lN3644

f;·;~.!·:y':

SJ

.:0' .",
,

,".

I'J;8!\y ,

(USl8)'
SA

">
HS20

SK
HVE20

SJ
lN3645

SJ

(USB2.5)
OH

HVHS
2500

PC

HVE25

SJ

KXS25
(UDE2.5) (UGE2.5)
SM
DO
DG
(UDB2.5)
DO

lN3646

SJ

HS30
HVE30

SXS30
SL
(US30)

SJ

S8

SK

:,,'

KXS30
SM

lN3647

SJ

(US35)
SC
HS40

SK

(uS40)
SC

SXS40
SL

KXS40
SM

HVE40

SJ
lN5l8l

SJ

(US45A)
SO
Parentheses (
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

) deSignates product uSing fused-in-glass Single chip rectifiers; all others use stacked chips.

7-3

Printed in U.S.A.

HIGH VOLTAGE RECTIFIERS
& RECTIFIER MODULES

HVH
5000

PB
HVHF
5000

PB
(US50A)

SO
SXS60
SL
(US60A)

KXS60

SM

SO

(UDA7.5)

DO
(UDB7

HVHS
7500
PC

DG

DG

DO

(uS80A)
SE

SXS80
SL

HVH
10000

PB
HVHF

KXS80

SM

(UDA10)

KXS100

HVHS

SM

10000
PC

DO.
1N5597)
DE

DG

10000

PB
SXS100
SL
(USBlO)

DH
(USSlO)

DH

HVH

HVHS

12500

12500

PC

PB
HVHF
12500

PB
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861~540
TWX (710) 326~509 • TELEX 95·1064

Parentheses (

) designates product uSing fused-in-glass single chip rectifiers; all others use stacked chips

"Available as JAN

7-4

PRINTED IN U.S,A

~ PRODUCT SELECTION GUIDE

S

~DDE

~

BE

DF,DG

STANDARD RECOVERY

HVHJ
15K

(US150A)

PA

(USS15)
DH

SF

HVH
15000

(UDA15)

DD

PB

HVHS
15000

PC

HVHF
15000

PB
(688-15)

BE
HVHS
17500

PC
(US180A) (688-18)
HVHJ
20K

SF

BE

(US200A)

HVH
20000

SF

PA

PB

HVHS
20000
PC

HVHF
20000

PB
(688-20)

BE
HVHJ
22.5K

PA
HVHJ
25K

PA

(688-25)

BE

HVH
25000

PB
HVHF
25000

PB
HVHJ
30K

PA
HVHJ
35K

PA
HVHJ
37.5K

PA
HVHJ
40K

PA
HVHJ
45K

PA

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

Parentheses ( ) deSignates product usmg fused-m-glass
smgle chip rectifiers; alJ others use stacked chips.

7-5

PRINTED IN U.S A

HIGH VOLTAGE RECTIFIERS
& RECTIFIER MODULES
/

~
~

/
SA-SN

PA- PC

FAST RECOVERY

(USR12)

SA
HA15*

(USR15)

SX15*

KX15*

SK

SA

SL

SM

HVX15

SJ

(USR18)

SA
HA20'

(USR20)

SX20'

KX20*

SK

SB

SL

SM

HVX20'

SJ

HA25*

HVF
2500t

SX25*

SK
HVX25*

PB

(UFB2.5)

SJ

(USR25)

OH

SL

SB

HVFS
2500t
PC
(UDD2.5)

KX25*

SM

(UDF2.5)

DO
(UGF2.5)
DG

DO

HA30'

(USR30)

SX30*

KX30'

SK

SC

SL

SM

(USR40A)

SX40'

KX40*

SO

SL

SM

HVX30'

SJ

(USR35)

SC

:; .

~;·r~ !·':~£f·:;~~~·;r ,:~~
, , .. .".': ,

Parentheses (
UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

• "

..!~

. •

) designates product uSing fused·in·glass single chip rectifiers; all others use stacked chips.

7·6

PRINTED IN U.S A

~

~9
Q
.

BE

PRODUCT SELECTION GUIDE

U

OG

OH

FAST RECOVERY
;.~,

Inverse

Voltage
5.0kV

>

....."">.:.".'~.

¥.',

AVERAGE. D.C. OUTJ>UT CURRENT

Peak

.'

•050-

1.5- ;

22.5A

.".

2.S: .

.lOOA

.250.50A

.50.75A

HA50

(USR50A)

HVF
5000t

SX50'

(UDC5)

SL

DO

MVX50

PB

(UFB5)

(UDD5)

PC

SJ

(UFS5)

OH

DO

KX50'

DG

SM

(UGF5)

so

SK

.75-

'1-

.100-.
.250A

..

lA

1.5A

2A

M
(UDF5)
DO'
IUGD5)

HVFS
5000t

OH

OG

6~DkV

(USR60A)

SX60'

KX60'

SO

SL

SM

'.
7.OkV

(USR70A)

SE
7.5kV

HA75

HVF
7500t

(UDC7.5)

HVX75

PB

(UDD7.5)

SJ

(UFB7.5)

DO

SK

(UFS7.5)

HVFS
7500t
PC
(UGD7.5)
DG
(UGF7.5)

OH

DG

DO

OH

,B.01<\'

IOkV

(USR80A)

SX80'

KX80'

SE

SL

SM

HAlOO

(USRIOOA)

KXlOO'

(UGDIO)

SE

HVF
lOOOOt

(UDCIO)

SK

DO

SM

OG

HVXlOO

PB

(688·lOR)

SJ

SXIOO'

BE

HVFS
lOOOOt

PC

SL
(UFSlO)

OH
12kV

(USR120A) (688-12R)

SF

BE

12 . 5kV,

HVFS
12500t

HVF
12500t

PB
Reverse
Reeov$ty

lime:

{tvlliX.l" •

.250ns

500ns .

.

,
'

500ns

..
..

250ri»*, .

'v"

. . "l5Onst':

~~;
....• ' .. :-.,

50lJns

~.,
~

...>

,.

~

.

..

.,

. SOOns'
250ns*"

...

' ';il

;~;~.t,

PC

L~2;Z~;

~;~}4i~;~~~

Parentheses ( ) deSignates product using fused'In,glass single chip reclillers; all others use stacked chips ..
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173' TEL. (617) 861-6540
7-7
PRINTED IN U.S.A
TWX (710) 326·6509 • TELEX 95-1064

PRODUCT SELECTION GUIDE

HIGH VOLTAGE RECTIFIERS
& RECTIFIER MODULES ..

..8

~

FAST RECOVERY

/

/... Q,.I! Iw:.•.~
HVFS
17500
PC

HVJX
20K

PA

(USR180A)
SF

(688-18R)
BE

(688-20R)
BE

HVF
20000t
PB

(688-25R)
BE

HVF
25000 t
PB

HVFS
20000

PC

HVJX
22.5K

PA

HVJX
25K

PA

HVJX
30K

PA

HVJX
35K

PA

HVJX
37.5K

PA

HVJX
40K

PA

HVJX
45K

PA

Parentheses (

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
. TWX (710) 326-6509 • TELEX 9S-1064

) designates product usmg fused-m-glass single chip rectifiers; all others use stacked chips.

7-8

PRINTED IN U.S.A.

CUSTOMER SPECIFICATION SHEET FOR SPECIAL RECTIFIER ASSEMBLIES

Date _ _ _ _ _ _ _ __
Company Name _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ,Phone _ _ _ _ _ _ _ __
Address _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _City _ _ _ _ _ _ _ _ State _ _ _ _ _ __
Engineer _ _ _ _ _ _ _ _ _ _ Ext. _ _ _ Buyer _ _ _ _ _ _ _ _ _ _ _ ,Ext.
_ _ _ _ New Application,----Existing Application, Presently Using _ _ _ _ _ _ __
Quantities to Quote _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _._ _ _ _ _ _ _ __
ELECTRICAL REQUIREMENTS

Rectifier Application:
1. Circuit: _ _ _ _ _ Half Wave _ _ _ __ Center Tap
2. AC Input: _ _ _ _ _ Volts
CPS
3.

DC Output:

4.

Max. Transient Voltage:

Volts

5.

Max. Fault Current:

6.

Type of Load

Doubler
Phase
Amps At

Bridge
Wave Shape

°c
Volts

Amps For

Sec.

Modulator Application:
1.

Use

2.

Peak Voltage

___~____----__---------------V

3. Wave Shape
4.

Rise or Switching Time

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Sec.

5. Peak Pulse Current ~---------------AmpsAt-------oC
6. Pulse Duration ____~----------------------__ Sec.
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Amps
7. Average Current
______________________________________________ PPS
8. PRF
ENVIRONMENTAL REQUIREMENTS
Operating Medium
Operating Temperature Range
Storage Temperature Range
Other Requirements _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

MECHANICAL REQUIREMENTS
Maximum Size _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
Maximum Weight _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
Terminal Provisions _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
Mounting Provisions _ _ _ _ _--'-_ _ _ _ _ _._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __

7-9

~UNITRDDE

RECTIFIER ASSEMBLIES

JAN IN5597
JAN IN5600
JAN IN5603

High Voltage Stacks, 1Amp to 5 Amp,
Military Approved
FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This series of military high-voltage highcurrent stacks offers the utmost in
reliability as required in military system
designs. The rectifiers are assembled with
diodes which have been subjected to TX
type screening tests.

Qualified to MIL-S-19500/404A
PIV: to lOkV
Surge Ratings: to 200A
Current Ratings: to 5A
Only Fused-in-Glass Diodes Used
Controlled Avalanche Characteristics
Modular Package For Easy Stacking

ABSOLUTE MAXIMUM RATINGS
JAN lN5597

JAN lN5600

JAN lN5603

lOkV

..... 5kV ........ .

.. 5kV

Peak Inverse Voltage
Maximum Average D.C. Output Current
@ Tc
75'C
Non-Repetitive SinuSoidal Surge (8.3ms)
@Te
75'C.
Operating and Storage Temperature Range

=

lA

=

.30A

.......... 2A...

BOA

.5A

..... 200A

-65'C to +15O'C

MECHANICAL SPECIFICATIONS
DE

THREAD
RELIEF TO

/' A 012 OUT TO CIA

= MAX ",0,

MINOR OIA

FROM 1 TO 3
THOS

TERMINAL 2

020 MIN )(45

CHAM

DF
JAN 1N5597
Lt,

A
B

c

C,

o

JAN 1N5600

JAN 1N5603
NOTES

Minimum
.73 (18.54)
.240
.265
1.85
.57

(6.10)
(6.73)
46.99)
(14.48)

1. All marking shall be on cathode side of
module.
2. Threaded stud ¥4-2BUNF-2A.
3. Threaded stud %-24UNF-2A.
4. Threaded insert ¥4-2BUNF-2B.

Ltr

A2,6

C

C,
00
00,

5.
6,
7.
8.

Dimensions in inches With metnc
equivalents (mm) in parentheses
Minimum
Maximum
.970 (24.64)
1.020 (25.91)
0 ( .03)
.307 (7.80)
.317 (B.05)
.318 (B.OS)
.400 (10.16)
3.450 (87.63)
3.650 (92.71)
.95 (24.13)
1.250 (31.75)

NOTES

B
3

5.7

Threaded insert %-24UNF-2B.
Cathode connected to terminal 2.
Cathode connected to terminal 1.
Module contour within dimension A is not
specified.

7-10

[l)JJ UNITRDDE

JAN IN5597 JAN IN5600 JAN IN5603
Electrical Specifications (at 2S'C unless noted)
Maximum
Forward
Voltage Drop
Type

PIV

Min.

Max.

l3V@lA
6V@2A
6V@5A

19V@lA
lOV@2A
10V@5A

Maximum Leakage
Current
@ PIV
TA -

kV

JAN IN5597
JAN IN5600
JAN 1N5603

10
5
5

25°C

TA -

Reverse

100'C
~A

pI

pI

joules

1
5
5

75
100
100

5
7
15

30
30
40

2
6
12

Typical Forward Voltage
vs. Forward Current
10K

JAN1NS597

5K

W//
/; '//

:;( lK

S 500
>-

/

Z

~ 200

OJ 100

0:

~
0:

o..

~&

20

10

/

E
~ 500
>-

z

1 0

OJ 100
OJ

"

.5

1.25

1.5

MULTIPLY V F BY,

z

~ 200
0:

OJ 100
OJ

o

0:

~
0:
o

..

50

I

r--

10

I
I

o

L

L L

.25
.5
.75
FORWARD VOLTAGE -

1.25

1.5

MULTIPLY VF BY,

JAN1~5600

L

50°C

.05

I

;f:

.1

..-

.:0 .2
>- .5

~~~§;
1 1 I
~
I
I

___ +25'C

z

"'0:0:

kJ

-

OJ
C,)

I I

I

10

II

.02

IJ III

II
20

.01

I V~

>-

I
/ I

Typical Leakage Current vs. PIV

1// '/

JAN1N56D3

~1(*
f! fl If

/ II I I

.75

10K

S 500

r--

u

1

Typical Forward Voltage
vs. Forward Current

;f: lK

20

o
..

I L

2K

50

/1 /

I II / II

/ II

FORWARD VOLTAGE -

5K

o

«
~

0:

I If

.25

V

~ 200

0:

!O "'I
j'"
""i-""i-.... 1/ II I I

1/ /

/ VI
li V_L

;f: lK

// I
II/

IVi I/~nu"

50

W; j/

2K

II II

0:

u
o

JAN1N56OD

5K

2K

Transient
Energy
Absorption

~A

Typical Forward Voltage
vs. Forward Current
10K

Capacitance
@ V, = looV
Min.
Max.

"««"''"

I

"'
...J

10
20
50
100

~

200

~

+75'C

L
125'C

500

1

o .25
.5
.75
FORWARD VOLTAGE -

1.25

lK

1.5

125

MULTIPLY VF BY,

UNITRODE CORPORATION 0 5 FORBES ROAD
LEXINGTON, MA 02173 0 TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

7-11

100

75
50
0/0 OF PIV

25

PRINTED IN U.S.A.

JAN IN5597 JAN IN5600 JAN IN5603

Typical Leakage Current
.001
.002

VS.

PIV

f- JAN! N5597

--

SO"C

.os
.1
::> .2

a:
a:

r

(J
(!J

'"

.5
1

....

z

1,/

10
20

1
--t;soc
100

S

"«
«

10
20

L

+25°C

.1
I--'"

so
100
200

~
+75°C

.1

~5°C
~

lK

25

7S
so
% OF PIV

-

500

'I

12S

UJ

'"
~

~7SoC

..J

SDoC

.S

:>
u

PIV

~

.os
.1
.2

0:
0:

s oc

VS.

JAN!~5603

UJ

I

2

50
100

~

-

....

z

UJ

UJ

.01
.02

1

.oos
:;( .01
.5 .02

«
«
UJ

Ty"pica I Leakage Current

125

100

7S

50

25

% OF PIV

Current Derating Curve
100

\

\

(!J

z
;::
«

a:
1f.

\

50

\
\

o

-"
o

50
100
150
CASE TEMPERATURE ec)

200

Discrete diode inspection lot .

•

100% Burn-In of discrete diodes
1. Measurement of specified parameters

100% process conditioning of discrete diodes

2. Reverse bias burn-in

1. High-temperature storage

3. Measurement of specified parameters to

2. Thermal Shock (temperature cycling)

3. Reverse-recovery time

I

determine delta

f--t

4. Lot rejection criteria based on rejects
from burn-in test

Preparation for delivery

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

Review of groups A,
B, and C data for lot
accept or reject.

7·12

H

Assembly and encapsulation of
discrete diodes into bridge assembly

I

J

~
Inspection test to verify LTPD
Group A

Group B
Group C

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

688 SERIES

High Voltage Stacks,
Standard and Fast Recovery
FEATURES
• PIV: from 10kV to 25kV
• Surge Rating: to 20A
• Recovery Time Available: to 500ns
• Current Ratings: to 0.6A
• Bonded Plate for Maximum Heat Transfer
• Controlled Avalanche Characteristics
• Only Fused-in-Glass Diodes Used

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
Maximum Average D.C. Output Current.
Non-repetitive Sinusoidal Surge (8.3ms)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Junction to Case .

DESCRIPTION
This series of high power stacks has a
unique packaging design that provides
characteristics not obtainable in conventional molded epoxy packages. This series,
therefore, is ideally suited for high-voltage,
high-power applications.

.... IOkV to 25kV
.. See Electrical Specifications
.. 20A
..... -65'C to +150'C

... 25'C/W
.... IO'C/W

688 SERIES

A
B

C
0

ins.

mm.

1.140 MAX.
2.985-3.015
2.110-2.140
.740-770
.720 .750

28.96 MAX.
75.82-76.58
53.59-54.36
1880-19.56
18.29 19.05

BE

.dd suffix R to denote Fast
Recovery version. For example,
for recovery time, trr == SOOns;
order 688-10R.

TYpical Weight -

2.5 ounces
70 grams

MARKING
Cathode - Positive Output
Anode - Negative

7-l3

[1JJ UNITRDDE

688 SERIES
Electrical Specifications (at 25°C unless noted)

Maximum Ratings
Maximum
Average

Maximum
~eakage

Maximum
Forward

Type

Standard
And Fast
Recovery*

688-10
688-12
688-15
688-18
688-20
688-25

D.C. Output

Current

@PIV

Voltage
Drop

PIV
kV
10
12
15
18
20
25

Current

TA - 25°C
p.A

TA _100°C
p.A

2

100

17V@0.4A
20V@0.4A
25V@0.4A
30V@0.4A
34V@0.4A
42V@0.4A

Tc _100°C
Amps
0.60
0.50
0.40
0.35
0.30
·0.20

*Add suffix R to denote Fast Recovery version.

Typical Forward Voltage Per Leg
vs. Forward Current

Typical Leakage Current VS. PIV

10

vV
vv VI
Ii'
,l>-

vv / /

~
.5
z

I-

"'0:0:

.2

'-'

.1
.05

:>

.
0
0:

;:
0:

0
"-

1--'--

/;::;:"1-/

II

.005
.002
.001

t-t-

,<.>,
~8/OJ?-

.02
.01

II
I
o

.2

//
/

II
.4

/

.6

V-V

.01
.02
.05
.1
~ .2
Iz .5

/'
+25"C

"'0:0:
:>
'-'

."''"."'
<.'l

II

/'o"C

..J

I

.J-"'":

10
20
50
100
200
500

+7S'C

./
V+125,C

I

lK

.8

1

1.2

FORWARD VOLTAGE - MULTIPLY

V,

125

1.4

BY,

100

75

50

25

% OF PIV

Current Derating Curve
100

\

<.'l
Z

;::

.. 50

\

0:

;II.

,I

6

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

I

o

50
100
150
CASE TEMPERATURE ('C)

7-14

200

PRlfHED IN U S.A.

HIGH VOLTAGE
SILICON RECTIFIERS

HA10-100
HVX10-100

100-250mA
Fast Recovery, Miniature
FEATURES
• PI v: From 1.0kV to 10kV
• 250nS Reverse Recovery
• High Surge Current Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVX/HA silicon rectifier series combine a medium rectified current capability
and high reliabilty in a miniature package
for commercial, industrial and military
applications. The use of cylindrical die construction and metallurgical bonds minimize
electrical and mechanical stress, contributing to long life. The fast reverse recovery
characteristics enhance applications in
high frequency power conversion and control circuits.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ..............•.................................. 1.0kV to 10kV
Maximum Average Rectified Current ....... , ............ See Electrical Specifications
Maximum One Cycle Surge 8.3mS ................. " ... See Electrical Specifications
Maximum Recurrent Peak Current Surge ................ See Electrical Specifications
Operating and Storage Temperature Range ............. , ........... -65°C to +150°C

MECHANICAL SPECIFICATIONS

I~ --II

031 ± 002" orA
(079) ± (0 OS)
999% SILVER

j

HVX10-100

SJ

HA10-100

SK

410 ± .005"
(1041) ± (0.13)

c=J/===

I-I

1.12 M.n
(284)

I

.140± 005"OIA
(3.57) ± (0 13)

--j

DimenSions In Inches and (millimeterS)

.031 ± 002" D1A
(0.79) ± (0.05)
99.9% SILVER

~I

.200 ± .005"
(5.08) ± (013)

~j====4DI===

~
DimenSions

In

112 Min
(284)

--jI

Q

100 ± .005" DIA.
(2.54) ± (0.13)

11.::/1

H

Inches and (millimeters)

Reformatted 12179

7·15

~UNITRODE

HA10-l00 HVX10-100

Type

Type

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Peak
Maximum
Maximum
Maximum
Inverse
Reverse
Forward
Reverse
Voltage'
Voltage
Recovery
Current
@100mA
@PIV
Time
PIV

HVX10
HVX15
HVX20
HVX25
HVX30
HVX40
HVX50
HVX75
HVX100

HA10
HA15
HA20
HA25
HA30
HA40
HA50
HA75
HA100

VF

IR

V

25°C
pA

100°C
pA

V

1000
1500
2000
2500
3000
4000
5000
7500
10000

1
1
1
1
1
1
1
1
1

20
20
20
20
20
20
20
20
20

5
5
5
5
5
12
12
12
12

MAXIMUM RATINGS
Maximum

Maximum
Recurrent

Average
Rectified
Currentt

Maximum

Peak
Current

One Cycle
Surge
8.3mS
Surge

IF

'F(surge)

mA

125°C
mA

A

A

125
125
125
125
125

62.5
62.5
62.5
62.5
62.5

2.5
2.5
2.5
2.5
2.5

25
25
25
25

1.0
1.0
1.0
1.0

14
14
14
14
14
4
4
4
4

TRR

10

nS

50°C
mA

100°C

250
250
250
250
250
250
250
250
250

250
250
250
250
250
100
100
100
100

50
50
50
50

*Operation and testing of devices over 10,000 V/inch may require re-encapsulation or immersion in a suitable dielectric material.
t The stated, AVERAGE RECTIFIED CURRENT ratings require no heat sinking, special mounting orforced air across the body of the
device.
NOTE: Maximum lead temperature for soldering is 250° C, 3/8" (9.5mm) from case for 5 seconds maximum.

MAXIMUM FORWARD CURRENT VS AMBIENT TEMPERATURE
<.!l
Z

~

II: 100

1\
1\

fZ
W

u..1I:

o a::

~aCl

75

ow II:

ffi ~

50

~

0.. II:

o
u..

W

25

<.!l

«

II:

w

>

«

0
-55

25

75

50

100

"

125

AMBIENT TEMPERATURE (OC)

REVERSE RECOVERY TEST CONDITIONS: I F = 50 mA, I R = 100 rnA, I RR = 25 rnA

150

175

REVERSE RECOVERY WAVE FORM

t
"

t

---

T. .

i-

~

""",,- io" ' ..

'.

1

REVERSE RECOVERY TEST CIRCUIT
R.U.T.

I

/

1

.01

PULSE

.

,

-i>I--

5111

SCOPE
TEKTRONIX
7403 OR
EQUIVALENT

GENERATOR
HEWLETT
PACKARD
214A OR

EQUIVALENT

SOli

3411

120

.J

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

7·16

PRINTED IN U.S.A.

HIGH VOLTAGE
SILICON RECTIFIERS

HS10-100
HVE10-30 (1N3643-47)
HVE40-100 (1N5181-84)

10D-250mA
Standard Recovery, Miniature
FEATURES
• PI v: From 1.0kV to 10kV
• JEDEC Types
• High Surge Current Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVE/HS silicon rectifier series combine a medium average rectified current
capability and high reliability in a miniature
package for commercial, industrial and
military applications. The use of cylindrical
die construction and metallurgical bonds
minimize electrical and mechanical stress,
contributing to long life. A 2 microsecond
reverse recovery characteristic improves
the circuit efficiency of power conversion
and control systems.

ABSOLUTE MAXIMUM RATINGS
HS
HVE
Peak Inverse Voltage ........ , ........ , .... , ........... " ......... , ................................1.0kV ................... 10kV
Maximum Average Rectified Current ............................ , .. '" ............................. See Electrical Specifications.
Maximum One Cycle Surge 8.3mS ................................................................. See Electrical Specifications.
Maximum Recurrent Peak Current Surge ........................................................... See Electrical Specifications.
Operating and Storage Temperature Range ......................................................... : .... -65 0 C to +175 0 C .... ..

MECHANICAL SPECIFICATIONS
HVE10-30 (1 N3643-47)
HVE40-100 (1N5181-84)

SJ

.410 ± 005
(1041) ± (0.13)

o
0)

140 ± .005 DIA
(3.56) ± (0.13)

DimenSions In Inches and (millimeterS)

HS10-100

r

.031 ± .002 DIA
(0.79) ± (0.05)
999%

SILV

1--1

I I

SK

200 ± 005
(5.08) ± (0.13)

~====lDI===

~ \~~~~~ ~

DimenSions

In

100 ± 005 DIA
(254) ± (0.13)

Inches and (millimeters)

Reformatted 12179

7-17

~UNITRDDE

HS10-100 HVE10-30 (1N3643) HVE40-100 (1N5181-84)

ELECTRICAL SPECIFICATIONS (al 25'C unless noled)
Peak

Maximum
Reverse
Current

Inverse
Voltage*

Maximum
Reverse
Recovery
Time

Forward
Voltage@
100mA Max.

@PIV

Maximum
Average

Maximum
Recurrent

Rectified
Currentt

Current

Peak

Maximum

One Cycle
Surge
8.3mS

Surge
IR

PIV
21'S

21'S

MAXIMUM RATINGS
Maximum

VF

25°C

100°C

10

25°C

50°C

100°C

150°C

IF(surge)

IF

Type

V

/lA

/lA

V

mA

mA

rnA

A

A

HS10

HVE10 (IN3643)

1000

1

20

3.5

250

150

50

2.5

14

HS15

HVE15 (IN3644)

1500

1

20

3.5

250

150

50

2.5

14

HS20

HVE20 (1 N3645)

2000

1

20

3.5

250

150

50

2.5

14

HS25

HVE25 (1 N3646)

2500

1

20

3.5

250

150

50

2.5

14

HS30

HVE30 (IN3647)

3000

1

20

3.5

250

150

50

2.5

14

HS40

HVE40 (IN5181)

4000

1

20

10.0

100

60

20

1.0

4

HS50

HVE50 (IN5182)

5000

1

20

10.0

100

60

20

1.0

4

HS75

HVE75 (IN5183)

7500

1

20

10.0

100

60

20

1.0

4

HS100

HVE100 (IN5184)

10000

1

20

10.0

100

60

20

1.0

4

Type

'Operation and testing of devices over 10,000 Vlinch may require re-encapsulation or immersion in a suitable dielectric material.
tThe stated, AVERAGE RECTIFIED CURRENT ratings require no heat sinking, special mounting or forced air across the body of the
device.
NOTE: Maximum lead temperature for soldering is 250'C 3/8" (9.5mm) from case for 5 seconds maximum.

HVE/HVE1Q-30/1N3643-47

«

300

f-

2SO

" ""-

SZ

w

a:
a:

:::>

200

0

c

a: ISO

~

a:

f2

100

HVE/HVE4Q-l00/lN5181-84)

~ 125

w

:::>

o

r'\.

W

a:
w
>

«

SO

o

o

-65

25

50

75

75

C

C)

«

I'"

f-

ZI00

a:
a:

100

a:

~ SO
a:

r'\.

US

"-

w

~

~

150

"" ,
~

f2
25

W

~

0

o

-65

175

AMBIENT TEMPERATURE (OC)

25

50

'15

100

125

~~
150

175

AMBIENT TEMPERATURE (OC)

REVERSE RECOVERY TEST CONDITIONS: I F =50 rnA,1 R =100 mA, I RR =25 rnA

REVERSE RECOVERY WAVE FORM

I

~T

t

~

.01

'.

1

REVERSE RECOVERY TEST CIRCUIT
R.U.T.

.. _

I

/

/

,."",..

..
T
'

lK

SIn

PULSE
GENERATOR

HEWLEn
PACKARD
214A OR

EQUIVALENT

son

120

J

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI,NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

7-18

PRINTED IN U.S.A.

HIGH VOLTAGE
SILICON RECTIFIERS

HVF2500-25000

MULTISTAC
Fast Recovery, High Current

FEATURES
• PIV: From 2.SkV to 2SkV
• 150nS Reverse Recovery
• High Surge Current Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVF MULTISTAC high current, high
voltage silicon rectifier's convenient size
and high power capability meets the reliability requirements of commercial, industrial
and military applications. Reliability with
economy are obtained through the use of
proprietary innovations in manufacturing
technique. Cylindrical die construction and
metallurgical bonds minimize electrical and
mechanical stress, contributing to long life.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . .. 2.5kV to 25kV
Maximum Average Rectified Current ...................... See Electrical Specifications
Maximum One Cycle Surge 8.3mS ........................ See Electrical Specifications
Operating and Storage Temperature Range ........................... -55°C to +150°C

MECHANICAL SPECIFICATIONS
1..-

CASE LENGTH

===============(C

HVF2500-25000

--I .

pi==
T

PB

250 ± 01"

1635mm) ± 1 254mm)

50 ± 02"
± (50Bmm)

1{1270mm)

TINNEO COPPER LEAOS
051 ± 001" DIA
1130mm) ± 1·254mm)

. - - - - - 2" Mon - - - - - (50.80rnm)

DimenSions

In

L.....'F=

I

~

r

~-----~

PART
NUMBER

t
CASE LENGTH
INCHES

MILLIMETERS

HVF2500

1.125 ± .02

28.58 + .508

HVF5OO0

2.000 ± .02

50.80 ± .508

69.85 ± .508

HVF7500

2,750 ± .02

HVF10000

3.500 ± .02

88.90 + .508

HVF12500

4.250 ± .02

107.95 ± 508

HVF15000

4.260 ± ,02

107.95 ± .508

HVF20000

4.250 ± .02

107.95 ± .508

HVF25000

4.250 ± .02

107.95 ± .508

Inches and (millimeters)

Reformatted 12/79

7-19

~UNITRDDE

HVF2500 - 25000
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Peak

Maximum
Reverse
Current

Inverse

Type

Voltage*

Maximum
Forward

Voltage
@loMax.
VF

@PIV
PIV

IR

V
HVF2500
HVF5000

2500
5000
7500
10000
12500
15000
20000
25000

HVF7500
HVF10000
HVF12500
HVF15000
HVF20000
HVF25000

25'C

100'C

I"A
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1

I"A
15
15
15
15
15
15
15
15

MAXIMUM RATING$

Maximum
Reverse
Recovery
Time

Maximum

Maximum

Average
Rectified
Currentt

One Cycle
Surge
8.3mS

TRR

V

nS

5.5
11.0

150
150

16.5
22.0
27.5
33.0

150
150
150
150
150
150

38.5
44.0

IF(surge)

10

55'C
A
.5
.5
.5
.5
.5
.5
.5
.5

Case
Length

l00'C
A
.33
.33

25'C
A
40
40

.33
.33

40
40

.33

40
40
40
40

.33
.33
.33

100'C
A
20
20
20
20
20
20
20
20

Ins.
1.125
2.000
2.750
3.500
4.250
4.250
4.250
4.250

MM
28.58
50.80
69.85
88.90
107.95
107.95
107.95
107.95

* Operation and testing of devices over 10,000 V/inch may require re-encapsulation or immersion in a suitable dielectric material.
t The stated, AVERAGE RECTIFIED CURRENT ratings require no heat sinking, special mounting or forced air across the body ofthe
device.
NOTE: Maximum lead temperature for soldering is 250'C 3/8" (9.5mm) from case for 5 seconds.

MAXIMUM FORWARD CURRENT VS. AMBIENT TEMPERATURE
~r----r---.r---,----

600~-"",,~-

(!)

w

-+-__._

___

..J

Environment

Multiply by

OIL .......................
FORCED AIR 200 CFM ....
FORCED AIR 400 CFM ....
FORCED AIR 200 CFM ....

1.0
1.5
1.75
2.0

~~-"""~~~---+----

ffi0..
W

~
a:

«or----r~~~~~--~~~~~~

~

XO~--+~~~--~~~~f---r----i

w

«

E

Cl

200

~
a:

l00f----+--=-F"'--''''i==+-''''''''"'~~-i

a:

f2
FORWARD CURRENT PER LEG VS. AMBIENT TEMPERATURE (OC)

REVERSE RECOVERY TEST CONDITIONS: IF

= O.IA, IR = O.2A, IRR = O.05A

REVERSE RECOVERY WAVE FORM

TAR" 150nS

I!

t

--

i

---(>I---

Tn

r----

.01

~
~~

I.

REVERSE RECOVERY TEST CIRCUIT
R.U.T.

./

I
u

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

I••

lk

SISI
SCOI'f
TEkTRONIX

PULSE
GENEIATOI
HEWLETt

7403 OR

EOUIYAUNT

PACKARD
214A 01
EQUIVALENT

I

SOll

34ll

120

Reverse recovery is measured on each rectifier stack prior to manufacture of the assembly

7·20

PRINTED IN U.S.A.

HIGH VOLTAGE
SILICON RECTIFIERS

HVFS2500-20000

MULTISTAC
Fast Recovery, High Current

FEATURES
• PI v, From 2.SkV to 20kV
• 150nS Reverse Recovery
• High Surge Current Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVFS MULTISTAC high current, high
voltage silicon rectifier's convenient size
and high power capability meets the reliability requirements of commercial, industrial
and military applications. Reliability with
economy are obtained through the use of
proprietary innovations in manufacturing
technique. Cylindrical die construction and
metallurgical bonds minimize electrical and
mechanical stress, contributing to long life.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ••...............................................•.. 2.5kV to 20kV
Maximum Average Rectified Current ...•.............•..•.... See Electrical Specifications
Maximum One Cycle Surge 8.3mS •....•...•.........•...... See Electrical Specifications
Operating and Storage Temperature Range ..........................•. -55°C to +150°C

MECHANICAL SPECIFICATIONS
HVFS2500-20000

PC

38 ± 01
(965) ± (254)

051 ± 003 DIA.
(1 30) ± (008)

____~)F=======

====~I==~C
1--I

I

CASE LENGTH

--I

t

69
(17.53)

±

02

± (0.51)
\- - - - -

20 Min
(50.8) - - - ,

CASE LENGTH

PART
NUMBER

INCHES

HVS2500

1.5 ± .03

381

HVS5000

25 ± .03

635±O76

HVS7500

3.5 ± 03

4.5

HVS10000

HVS17500
HVS20000

88.9

± 0.76
± 0.76

1143 ± 0.76

± 0 76
± 0.76

55 ± .03

1397

I

65 ± 03

1651

6.5 ± 03

165.1 ± 0.76

I

65 ± .03

1651 ±O.76

HVS12500
HVS15000

± .03

MILLIMETERS

I

Dimensions In inches and (mIllimeters)

Reformatted 12/79

7-21

[1JJ UNITRDDE

HVFS2500·20000
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Peak

Maximum
Reverse
Current

Inverse

Type

Voltage*

Maximum
Forward

Voltage
@Io
VF

@PIV
PIV

IR

V

25°C
p.A

100°C

HVFS2500

2500

10

HVFS5000
HVFS7500

5000
7500

HVFS10000

10000

HVFS12500
HVFS15000

12500
15000

HVFS17500
HVFS20000

MAXIMUM RATINGS

Maximum
Reverse
Recovery

Maximum
Average

Maximum

One Cycle
Surge
8.3mS
.IF(surge)

Rectified
Currentt

Time

TRR

10

lDOoC

25°C
A

lDOoC
A

Ins.

MM

200

1.5

38.1

200

100
100

2.5

63.5

1.3

200

100

3.5

2.2
2.2

1.3
1.3

200
200

100
100

4.5
5.5

88.9
114.9
139.7

150
150

2.2

1.3

200

100

6.5

165.1

2.2

1.3

200

100

6.5

165.1

150

2.2

1.3

200

100

6.5

165.1

V

nS

55°C
A

120

8

150

2.2

A
1.3

10

120

16

150

2.2

1.3

10

120

21

150

2.2

10

120

10
10

120
120

29
36
44

150
150

17500

10

120

51

'20000

10

120

58

p.A

Case
Length

*Operation and testing of devices over 10,000 V/inch may require re-encapsulation or immersion in a suitable dielectric material.
t The stated, AVERAGE RECTIFIED CURRENT ratings require no heat sinking, special mounting or forced air across the body of the
device.
.
'
NOTE: Maximum lead temperature forsoldering is 250°C 3/8" (9.5mm) from case for 5 seconds.

MAXIMUM FORWARD CURRENT VS AMBIENT TEMPERATURE
CJ
Z

;::
~ 100

"

I-

Z

W

o~

~G

75

wO
oa:

ffi~ so
o

"-

"\r\.

\

Q.a:

~

25

\

CJ


..:

400

..:
w

..:

300

::J

..:
;:

E
0
a:

200

a:
0

100

(!)

80

a:

en

;?;

60
40

"-

20
0
0.1

FORWARD CURRENT PER LEG VS. AMBIENT TEMPERATURE (0 C)

0.2

0."

1.0

0.6

2.0

".0

6.0

10

RC TIME CONSTANT (mS)

NON·RECURRENT FORWARD CURRENT SURGE CURVE

"--..
•,

.......
......

.r

....

...

......... t-..

,;;:;-~

~'

:"

NUMBER OF CYCLES AT 60 CPS

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

/

"

1

.-

.0.1

/

°t

25"(

REVERSf RECOVERY TEST CIRCUIT

IMRSE RECOVERY WAVE FORM

'I

J

7-24

~

~

..

'

T

_'01
"''''

_""

.

,

~
Sl •

"CIWO

214... 01:
EOUIVALENl'

~a<~~
SO.,eo

_.

Y
,.....
...........
SCCfl

"
M.

..

50 •

m

Reverse recovery is measu red on each rectifier
stack prior to manufacture of the assembly.

PRINTED IN U.S.A.

HIGH VOLTAGE
SILICON RECTIFIERS

HVH F5000-25000

MULTISTAC
Standard Recovery, High Current

FEATURES
• PI v: From 5kV to 25kV
• 1JlS Reverse Recovery
• High Surge Current Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVHF MULTISTAC high current, high
voltage silicon rectifier's convenient size
and high power capability meets the reliability requirements of commercial, industrial
and military applications. Reliability with
economy are obtained through the use of
proprietary innovations in manufacturing
technique. Cylindrical die construction and
metallurgical bonds minimize electrical and
mechanical stress, contributing to long life.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ...................................................... 5kV to 25kV
Maximum Average Rectified Current ......................... See Electrical Specifications
Maximum One Cycle Surge 8.3mS .......................... See Electrical Specifications
Operating and Storage Temperature Range .. '" ....................... -55°C to +150°C

MECHANICAL SPECIFICATIONS

1-

CASE LENGTH

===============((

HVHFSOOO-2S000

-1 ,

PB

250 ± 01"

F

'1==1 6 35mm) ± I 254mm)

T
(1.3o:~1

50 ± 02"

: (~~~~~~.

c=====99='3=%=S='L=V=E=R='=j=f==~I
1 - - - - - 2" Mm
(50 BOmm)

1(1270mm)

_____

±

(S08mm)

---------~l

i
i

PART
NUMBER

HVHF5000
1

HVHF7S00

HVHF10000
i

DImenSIons In Inches and (millimeterS)

Reformatted 12/79

--,~ ~

I
I
!

CASE LENGTH
INCHES

1125

± .02

1.625 ± 02

±
2.375 ±
2.750 ±

2.000

J
I
I

MILLIMETERS

28.58 ± 0.508

4128±0508 I

02

50BO±050B

02

HVHF20000

3.500 ± 02

± 0.508
± 0.508
8890 ± 0.508

HVHF25000

4250± 02

10795±OS08

HVHF12500

HVHF15000

02

7-25

60 33

6985

~UNITRDDE

HVHF5000-25000
ELECTRICAL SPECIFICATIONS (at 25' C unless noted)
Peak
Inverse
Voltage*

Type

Maximum
Reverse
Current

Maximum

Forward

Maximum
Average

Voltage

Recovery

@PIV

@Io

Time

Rectified
Currentt

IA

VF

TA~

10

V

pS

7

1
1

PIV
25'C
p.A

V

5000

HVHF5000
HVHF7500
HVHF10000
HVHF12500
HVHF15000
HVHF20000
HVHF25000

7500
10000
12500

0.1
0.1
0.1
0.1

15000
20000
25000

0.1
0.1
0.1

MAXIMUM RATI.NGS

Maximum
Reverse

100'C
p.A
15
15
15
15

10
14
17

15
15
15

20
27
33

1
1
1
1
1

Maximum

One Cycle
Surge
8.3mS
IF(surge)

55'C
A
.5

100'C
A
.33

25'C
A
60

100'C
A
30

.5
.5
.5

.33
.33
.33

30

.5
.5
.5

.33
.33
.33

60
60
60
60

60
60

40
40

40
40
40

Case
Length

Ins.
1.125

,

MM
28.58
41.28

1.625
2.000
2.375

50.80
60.33

2.750
3,500
4.250

69.85
88.90
107.95

*Operation and testing of devices over 10,000 V/inch may require re-encapsulation or immersion in a suitable dielectric material.
tThestated, AVERAGE RECTIFIED CURRENT ratings require no heat sinking, special mounting or forced air across the body olthe
device.
NOTE: Maximum lead temperature for soldering is 250'C 3/8" (9.5mm) from case for 5 seconds.

MAXIMUM FORWARD CURRENT VS. AMBIENT TEMPERATURE
Multiply Iy

7 0 0 , - - - - , - - - , - - - - , - - EnvlronrMnt
CMl..

20

--f--fORCEDAIR200CFM
FORCED AIR 400CFM ••

1 75

.

°25

,.

. 15

50

FORWARD CURRENT PER LEG VS. AMBIENT TEMPERATURE ('C)

REVERSE RECOVERY TEST CONDITIONS: IF = 100mA, IR = 200m A, IRR = SOmA

REVERSE RECOVERY TEST CIRCUIT

REVERSE RECOVERY WAVE FORM

R.U.T.

---l>I--

Ii.

I---T .......

t
I.

1

I

/

.01

/'

J

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 .• TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

".,.,.

~
1••

lK

5111

PULSE
GENERATOR

$COlI

TEKTRONIX
7403 01
EQUIVALENT

HEWLEn

PACKARD
214A OR

EOUIVALENT

T

5O11

lOll

120

Reverse recovery is measured on each rectifier stack prior to manufacture of the assembly.

7·26

PRINTED IN U.S.A

HIGH VOLTAGE
SILICON RECTIFIERS

HVHJ15K-45K

MULTISTAC
Medium Recovery, Medium Current

FEATURES
• PIV: From 15kV to 45kV
• 2pS Reverse Recovery
• High Surge
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVHJ MULTISTAC medium current.
high voltage silicon rectifier assembly's small
size and high power capability meets the
stringent reliability requirements of commercial, industrial and military applications.
Reliabilty with economy are obtained
through the use of proprietary innovations
in manufacturing technique. Cylindrical die
construction and metallurgical bonds minimize electrical and mechanical stress,
contributing to long life.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ....................•................................ 15kV to 45kV
Maximum Average Rectified Current ...•..........•.....•.•.. See Electrical Specifications
Maximum One Cycle Surge 8.3mS .....•..........•..•...... See Electrical Specifications
Operating and Storage Temperature Range ............................ -55°C to +150°C

MECHANICAL SPECIFIC~onQ!IIS
HVHJ15K-45K
040

± .001

250

DlA

PA

± .01

(6.35) ± (0.254)

(1016) ± (.0254)

\

====~~C~________~)F~~===

------r-

~ i - - - - C A S E LENGTH----

I

I---

I

± .01
(6.35) ± (.0254)
.250

Dimensions in inches and (millimeters)

I

20 Min. _ _ _
(50.8)

CASE LENGTH

PART
NUMBER

INCHES

HVHJ15K

15 ± .02

381 ± .508

HVHJ20K

20 ± 02

508 ± .508

HVHJ225K

2.0

50.8 ± .508

2.5

±
±

.02

HVHJ25K

02

63.5 ± .508

MILLIMETERS

HVHJ30K

2.5 ± .02

635 ± .508

HVHJ35K

30 ± .02

76.2 ± .5OB

HVHJ37.SK

3.0 ± .02

76.2

HVHJ40K

35 ± .02

889 ± .SOS

HVHJ45K

35 ± .02

889 ± .508

±

.508

[1JJ
Reformatted 12179

7-27

_UNITRDDE

HVHJ15K-45K
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Peak

Maximum
Reverse
Current

Inverse

Type

Voltage*

Maximum

Forward
Voltage
@Io
VF

@PIV
PIV

IA

V
HVHJ15K

15000

HVHJ20K
HVHJ22.5K

20000
22500

25'C

100°C

IJ.A
0.1
0.1

IJ.A
25

0.1

25

HVHJ25K

25000

0.1

HVHJ30K
HVHJ35K

30000

0.1
0.1

MAXIMUM RATINGS.
Maximum
One Cycle
Surge
8.3mS

Maximum

Maximum
Reverse

Average
Rectified
Currentt

Recovery
Time

TAA

Case
Length

IF(surge)

10

/1S

55'C
mA

100°C
mA

25°C
A

A

Ins.

MM

20

2

50

30

5

2.5

1.5

38.1

30
30

2

50

30

5

2

50

30

5

2.5
2.5

2.0
2.0

50.8

25
25

40

2

30
30

5
5

2.5
2.5

63.5

2

50
50

2.5

40

2.5

25

50

2

50

30

5

2.5

3.0

63.5
76.2

V

25

100'C

50.8

HVHJ37.5K

35000
37500

0.1

25

50

2

50

30

5

2.5

3.0

76.2

HVHJ40K

40000

0.1

25

60

2

50

30

5

2.5

3.5

88.9

HVHJ45K

45000

0.1

25

60

2

50

30

5

2.5

3.5

88.9

*Operation and testing of devices over 10,000 V/inch may require re-encapsulation or immersion in a suitable dielectric material.
t The stated, AVERAGE RECTIFIED CURRENT ratings require no heatsinking, special mounting or forced air across the body of the
device.
NOTE: Maximum lead temperature for soldering is 250°C 3/8" (9.5mm) from case for 5 seconds.

MAXIMUM FORWARD CURRENT VS. AMBIENT TEMPERATURE
(!)

z

~

'"
fZ

100

I"

w

u.'"

a'"
!zGO 7'

~

w

~~

wil:

~

so

~

\

0..",

f2

w

(!)

25

\

«

'">w
«

o

o

-55

25

~

75

100

1H

ISO

11.

AMBIENT TEMPERATURE (OC)'

REVERSE RECOVERY TEST CONDITIONS: IF=50mA, I A=100mA, IAA =25mA

REVERSE RECOVERY WAVE FORM

REVERSE RECOVERY TEST CIRCUIT
R.U.T.
.01

io-. TRR ......
IfF
T RA "'2uS

~

t

j

IR

1

I{

./

In

---- T

,.

--t+--

5111
SCOPE
lIK'IRONIX

PULSE
GENERATOR
HEWLEn

7403 OR

EQUIVALENT

PACKARD
214A OR
EQUIVALENT

SOil

3411

120

J

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

7-28

PRINTED IN U.S.A.

HIGH VOLTAGE
SILICON RECTIFIERS

HVHS2500-20000

MULTISTAC
Medium Recovery, High Current

FEATURES
• PIV: From 2.SkV to 20kV
• 2.JJS Reverse Recovery
• High Surge Current Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVHS MULTISTAC high current, high
voltage silicon rectifier's convenient size and
high power capability meets the reliability
requirements of commercial, industrial and
military applications. Reliability with
economy are obtained through the use of
proprietary innovations in manufacturing
technique. Cylindrical die construction and
metallurgical bonds minimize electrical and
mechanical stress, contributing to long life.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage . ................................................... 2.SkV to 20kV
Maximum Average Rectified Current ......................... See Electrical Specifications
Maximum One Cycle Surge B.3 mS ...........•.•.•.......... See Electrical Specifications
Operating and Storage Temperature Range ................•........... -S5°C to +150°C

MECHANICAL SPECIFICATIONS
. HVHS2S00-20000

PC

38 ± 01
(9.6S) ± (2.S4)

.051 ± .003 DIA.
(1.30) ± (0.08)

I

====~l~C~__~)F======
1----I
I
CASE LENGTH

.69 ± .02
(17.S3) ± (0.S1)

I

----

2.0 Min .
(SO.8) - - - I

CASE LENGTH

PART
NUMBER

INCHES

HVHS2S00

1.5 ± 03

38.1 ± 0.76

HVHSSOOO

2.5 + .03

635 ± 0.76

MILLIMETERS

± 0.76

HVHS7S00

35 ± .1)3

HVHS10000

4.5 ± 03

HVHS12S00

5.5

±

HVHS15QOO

6.5

± .03

1651 ± 0.76

HVHS17S00

6.5 ± .03

1651 ± 0.76

HVHS20000

6.5 ± .03

165.1

03

88.9

114.3 ± 0.76

139.7

± 0.76

± 0.76

Dimensions in inches and (millimeters)

Reformatted 12179

7-29

~UNITRDDE

HVHS2500-20000
ELECTRICAL SPECIFICATIONS 

t.0'

_rlR~

.iF

t

I

'.

1

. /~

I(

~

..

'

PULSE
GENERATOR

5'll.
SCOPE
TEKTRONIX
1403 OR
EQUIVAlENT

HEWLm

PAC.AlD
214A OR

EQUIVALENT

T

34ll.

J

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710)·326-6509 • TELEX 95-1064

••

.20

Reverse recovery IS measured on each rectifier stack
prior to manufacture of the assembly

7-30

PRINTED IN U.S.A

HIGH VOLTAGE
SILICON RECTIFIERS

HVJX15K-45K

MULTISTAC
Fast Recovery, Medium Current

FEATURES
• PI v: From 15kV to 45kV
• 200nS Reverse Recovery
• High Surge Current Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The HVJX MULTISTAC medium current
high voltage silicon rectifier assembly's
small size and high power capabilty meets
the stringent reliabilty requirements of
commercial, industrial and military applications. Reliability with economy are obtained through the use of proprietary innovations in manufacturing technique. Cylindrical die construction and metallurgical
bonds minimize electrical and mechanical
stress, contributing to long life.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ..................................................... 15kV to 45kV
Maximum Average Rectified Current ......................... See Electrical Specifications
Maximum One Cycle Surge 8.3 mS .......................... See Electrical Specifications
Operating and Storage Temperature Range ............................ -55°C to +150°C

MECHANICAL SPECIFICATIONS
HVJX15K-45K

PA

250 ± .01
(6.35) ± (254)

40 ± 001 DIA
(1016) ± (0254)

I

r
--1-======~1==(=============)~~~~==
1 - - - - CASE LENGTH - - - -

I---

I

250 ± 01
(635) ± (254)

CASE LENGTH

PART

Dimensions

In

inches and (millimeters)

Reformatted 12/79

I

20 Min. _ _
(508)

NUMBER

INCHES

HVJX15K

15 ± 02

381 ± 506

HVJX20K

2.0 ± .02

50.8 ± .508

HVJX22.5K

2.0 ± 02

50.8 +- 508

HVJX25K

25 ± .02

635 ± 508

HVJX30K

2.5

±

635 +- .SOB

HVJX35K

3.0 ± 02

76.2 ± SOB

HVJX37.5K

3.0 + .02

76.2 ± .508

.02

MILLIMETERS

HVJX40K

3.5 ± 02

889 ± .50B

HVJX45K

3.5

±

88.9 ± .508

.02

7-31

[1J] UNITRDDE

HVJX15K-45K
MAXIMUM RATINGS

ELECTRICAL SPECIFICATIONS 

«

0
-55

o

25

7S

~

100

125

150

175

AMBIENT TEMPERATURE (0G)

REVERSE RECOVERY TEST CONDITIONS' IF =50mA. IA =100mA. IRA =25mA

REVERSE RECOVERY WAVE FORM

REVERSE RECOVERY TEST CIRCUIT
R.U.T.
~

t
I.

TRR :200n$

I-- r.. r-

·t

~~

lK

SIll

PULSE

SCOPE

GENHArO.
HEWlETT
PACKARD

11KTIONIX
7403 OR
EQUIVAlENT

214A OR
EQUIVALENT

/~

IR

1

.01

5O11

3411

120

~
.J

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

7·32

PRINTED IN U.S.A.

HIGH VOLTAGE
SILICON RECTIFIERS

KX1S-100
KXS1S-100

POWERSTACK
1.5 to 3.0A
Very High Current, Miniature

FEATURES
• PIV: From 1.5kVto 10kV
• 1.5t03.0A
• 250nS Reverse Recovery
• High Surge Ratings
• Low Reverse Leakage
• Corona Free

DESCRIPTION
The KX/KXS silicon rectifier series is a
unique concept for high current high voltage
applications. Matched junction characteristics and low stray capacitance due to
metallurgically bonded junctions eliminates
the need for external compensation networks. These rectifiers utilize HVO's cylindrical die construction, which minimizes electrical and mechanical stress, insuring long
life for commercial, military and industrial
applications.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage .................................................... 1.5kV to 10kV
Maximum Average Rectified Current ...................... See Electrical Specifications
Maximum One Cycle Surge B.3mS ........................ See Electrical Specifications
Operating Temperature Range ........................................ -55"C to +150"C
Storage Temperature Range .......................................... -55" C to +175" C

MECHANICAL SPECIFICATIONS
KX15-100
KXS15-100

SM

093 ± 003D1A
(2.36) ± (076)
99.9% SILVER - ; - - ]

~
.40 Min.
(10.16)

II
1+---+

.375 ± .015
(9.52) ± (.381)
.500 ± .015 OIA.
(12.7) ± (.381)

Dimensions in inches and (millimeters)

Reformatted 12/79

7-33

[1JJ UNITRDDE

· KX1S-100
MAXIMU~ RATINqS

ELECTRICAL SPECIFICATIONS 
u

L 1
1/ / I
I I
I I I

50

Ct:

'/

~~1f'~
7;;:fJr

~ 200

Ct:

:> 100
u
Ct:

Typical Leakage Current VS. PIV

I I II
I /

;t IK
-

/,

UJ

"'"
''-'""

10
20

UJ

II

.25
.5
.75
FORWARD VOLTAGE -

50
100
200
IK

1.25
1.5
MULTIPLY V, BY,

I
V

_ _ +75'C

j

I

500

o

,/
+25'C

125

100

75

-

~5'C

50

25

% OF PIV

Output Current Ratio
VS. Velocity of Air Flow

Current Derating Curve

~ 1.75

~

Ct:

1.50

'"~ 1.25

VI

u

./

~ 1.00

... .75

~
I

.50

'z~"

V

50

Ct:

f--+-+-+--'~'oIc-----1--+-+----1
'.

t'-

/

....
'"

5

V

-

V

50
100
150
AMBIENT TEMPERATURE ('C)

200

'" .25
100
V-

200

300

400

500

600

VELOCITY OF AIR (LFM)

Current Derating Curve
100

"z
~

'z~"

\
50

Ct:

100

Current Derating CUl1le
"--"'-"'r-.,:--'--"--'--"-""--'

50

f---+--+-+-~",-,+----1--+--1

,

Ct:

t'-

t'0L--L__L--L__L-~__~~~
o
50
100
150
200
CASE TEMPERATURE ('C)
Oil Immersed

CASE TEMPERATURE ('C)
Air Coaled

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

7·40

PRINTED IN U.S.A.

UFB, UFS, USB, USS SERIES

RECTIFIER ASSEMBLIES
High Voltage Stacks,
Standard and Fast Recovery
FEATURES

DESCRIPTION

•
•
•
•
•
•
•
•

These assemblies uniquely combine a
versatile stackable design with all the
requirements for reliable high voltage
operation. All modules are suitable for
bridge or series operations.

Controlled Avalanche Characteristics
Only Fused-in-Glass Diodes Used
High Forward and Reverse Surge Capability
Transfer Molded for Voidless Construction
Modular for Easy Stacking
PIV: from 2.5 kV to 15kV
Recovery Times: to 500ns
Continuous Ratings: to 2.3A

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, USS Series
Peak Inverse Voltage, USB Series
Peak Inverse Voltage, UFS Series
Peak Inverse Voltage, UFB Series.
Maximum Average D.C. Output Current
Non-Repetitive Sinusoidal Surge (8.3ms)
Operating and Storage Temperature Range

5.0 kV to 15 kV
. 2.5 kV to lOkV
...... .. ....... 5.0 kV to 10kV
. 2.5 kV to 7.5 kV
.. See Electrical Specifications
S!le Electrical Specifications
.. --6S"C to +lSO"C

MECHANICAL SPECIFICATIONS
UFB, UFS, USB, USS SERIES

$
J~~~A~R~~~
Ai!

--

10-32

J

-

jiG

-

~\J~F'2B 0

TYpical Weight: USS & UFS Series -

ins.

A
• \
'

E

B

G
0
E

.230-.235
.980-1.10
.020 .040
.320-.330
97 100

DH

mm.
5.84-5.97
24.89-27.94
0.51 1.02
8.13-8.38
24.64-25.40

1.0 ounce
28 grams

USB & UFB Series -1.1 ou nce
31 grams

MARKING
Type number marked on unit.

Polarity - Cathode connected, to stud.

7-41

~UNITRDDE

UFB, UFS, USB, USS SERIES

Electrical Specifications (at 25°C unless noted)

Maximum Ratings
Maximum
Maximum

Maximum
Maximum
Forward

Type

Standard
Recovery

USS5
USS7.5
USS10
USS15
USB 2.5
USB5
USB 7.5
USB 10

Standard
Recovery

Fast
Recovery

UFS5
UFS7.5
UFS10
UFB2.5
UFB5
UFB7.5

Fast
Recovery

PIV
kV

Voltage Drop

5.0
7.5
10
15
2.5
5.0
7.5
10
5.0
7.5
10
2.5
5.0
7.5

9V@0.6A
13V@0.5A
17V@0.3A
25V@0.2A
5V@ 1.1A
9V@0.7A
13V@0.5A
17V@O.4A

Reverse
Transient
Energy

Leakage
Current
@PIV

Reverse
Recovery
Time

Absor~Jon

p.A

ns

joules

12V@0.5A
18V@0.4A
23V@0.3A
6V@0.9A
12V@0.6A
18V@0.4A

5

-

10

-

5

soo·
3SOt
SOO·
3SOt

10

Average
D.C. Output
Current
TA - 25°C
TA = 50°C
AIR
OIL
Amps
Amps

1.5
2.5
3.0
5.0
3.0
6.0
9.0
12

0.60
0.45
0.35
0.25
1.1
0.68
0.53
0.43

1.5
2.5
3.0
3.0
6.0
9.0

0.50
0.38
0.30
0.90
0.58
0.45

Non·Repetitive

Sinusoidal
Surge
(8.3ms)
Amps

1.1
0.91
0.71
0.51
23
1.5
1.2
1.0
0.90
0.75
0.58
2.0
1.3
1.0

25

80

20

70

*Measured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to O.5A.
tMeasured in a reverse recovery circuit switching from .SA foward current to lA reverse current, recovery to .25A.

Output Current Ratio
vs. Velocity of Air Flow

V

'"

~ 2.00

..

....~1.50
I

I
o

'"::>

...o::>

100

"-

60

...z
Ul

'"'"::>

"- r--...

0

'\

o
o

300

400

500

600

0
0

...
...''0""
Ul

\

FIG.2

0
20 40 60

i,\

60

'\

\.

40

If!

80 100 120 140 160 180

\

20

TEMPERATURE ('C)

VELOCITY OF AIR (LFM)

~

80

0..

~ 20

200

...::>
...
::>

'\

5 40

:sIf!''""

Output Current
vs. Ambient (Oil) Temperature

....
£100

0..

FIG. 1

V-

"-

80

0:

V

::>

'" 1.00

(;i

/

....
0..

Output Current
vs. Ambient (Air) Temperature

...

/

~ 1.75

::; 1.25

~ 100

-

'" 2.50

z

~2.25

_

\

FIG. 3

20 40 60 80 100 120 140 160 180
TEMPERATURE (OC)

Application example: The rectifier is to be used in a cabinet at 60°C with ambient
air moving at 400 lFM. The rating is reduced (Fig. 2) by a factor of 0.81 due to the
elevated temperature, but it is enhanced by 2 X (Fig. 1) due to the air flow. Hence
the DC output current is 0.81 x 2, or 1.6 times the 25°C air rating.
Forward Pulse Current
10K
5K
2K
1K

VS.

Multiple Surge Current vs. Duration

Duration
100

SQUARE PULSE

r-~

5:
!z 500
Ul

'" 200
~ 100
o 50
20
10

.1.u5

r--:: I:::--

~

5:

I

I I I

r--: ~USB

p:::: ~ UFB

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 9H064

0: ..

60

..

40

0:1:

~ ~~

lOps
lOOps
DURATION

80

"' ....
::>'"

F=::

I

.Ul

"'z
z UlV>

Rt--.

t::::t:--.
1ms

I

0

_it::£,

'"
Ul
0..

I"

20

o

lOms

7·42

........
..........
I

.......

~SB&

UFB

l'---J.
i-1

uss

~ UF~

t-......

10 20
50 100 200
CYCLES OF 60Hz SINEWAVE

-..;;;;

500 1000

PRINTED IN U.S.A.

UFB, UFS, USB, USS SERIES

Typical Forward Voltage
VS. Forward Current
10

Typical Forward Voltage
VS. Forward Current

Typica I Forward Voltage
VS. Forward Current
10

10
USB SERIES

USS SERIES

I

UFB SERIES

V. 1/

V

5
!z

.5

1"'IIII

OJ

~

.2

(J

.1

:>

c

'"~

'"~

//V

III II'

I

.05
.02
.01

II
\17~oC

+iOOjC
.001

I

II

.005
.002

I

I-

I

r---~

II

~

.2

~

.1

'"~

.05

:>

+25°C

11/
II
+ 75°C 1-01

.005
.002

Typical Forward Voltage
vs. Forward Current

I

.002

z

I/V.
VI/V
II I1II

OJ

~
:>
(J

.2

.1

LL

.005

.05
.02
15°C

.01
.005

IJ

II II I
if

f-

II

'"""'

.002
.001

o

A II

II

.2
.4
.6
.8
1.0 1.2 1.4
FORWARD VOLTAGE- MULTIPLY V, BY,

.01
.0s

~

.1

25°C

~ .2
.5

,...,

..... f-"'"

:5...J

75°C

<'
.=,
....
zOJ

'"'"

-

10
20

f-"'"

i!
125

100

75

50

7-43

...."'i12I C
I I

25

0.1

-

0.2

"Ii r-

+25°C-

-+1s1-f-

(J

OJ

""
"'"

--

0.5

:>

OJ
...J

% OF PIV

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (71.0) 326·6509 • TELEX 95-1064

~oL -

.02

z

50

II
II

USS AND UFS SERlE

.005

<' .02

100

~"'-50°C

I

Typical Leakage Current VS. PIV

.... f.-::!:.5doc

+25°C

rrlt I I ~Joc

+25°C

o .2 .4 .6 .8 1.0 1.2 1.4
FORWARD VOLTAGE- MULTIPLY V, BY,

PIV

.=,

";2

I

:1

II

II-~

V

.001

USB AN" UFB SERIES

..... 05

OJ

+l00°C

.002

.01

~

J I f1/

.01

(J

C

'"~
o'"

VS.

+lWC

.02

.002

.005

.5

'"~

ri

I 1-1

1/

Typical Leakage Current
.001

UFS SERIES

5....

~

o .2 .4 .6 .8 1.0 1.2 1.4
FORWARD VOLTAGE - MULTIPLY V, BY,

10

'f 1/1/

'" .05

'II I

A II

.001

o .2 .4 .6 .8 1.0 1.2 1.4
FORWARO VOLTAGE- MULTiPLY V, BY,

.2

.1

c

i rV- II
r-<

ILllII

.5

~
:>

r.-:t- +25°C

II

.01
10

l/.~I'l

....

zOJ
(J

'"

L I -LJ

g'

1
/

II

I I

~ .02

II

I

1
.5

OJ

II

I

5
~

V r;

- --

10
20
50

,...,v
125°C

100
200
125

100

75
50
% OF PIV

25

o

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

UGB, UGD, UGE, UGF SERIES

High Voltage Doorbell® Modules
Standard and Fast Recovery
FEATURES

OESCRIPTION

•
•
•
•
•
•
•

This series of high-voltage, high-current
stacks that incorporate a unique modular
design makes it particularly well-suited for
high power applications such as in radar
systems as charge, hold-off and clipper
diodes.

Current Ratings: to IDA
PIV: 2.5 kV tv lOkV
Recovery Times: to 500ns
Only Fused-in-Glass Diodes Used
Controlled Avalanche Characteristics
Stackable to 6OOll.V
Modular Package for Easy Stacking

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
UGB, UGD Series.
UGS, UGF Series
Maximum Average D.C. Output Current
Non-repetitive Sinusoidal Surge (8.3ms)
Operating and Storage Temperature Range

......SkVto 10 kV
.2.SkV to 7.SkV
See Electrical Specifications
.......... See Electrical Specifications
.............. -6SoC to +lSO°C

MECHANICAL SPECIFICATIONS
UGB, UGO, UGE, UGF SERIES

DG

3.487" DIA MAX
1<-----87.Smm----
u
w
III
..J

..

IDura~~~·f~r r:,".!!eDc:~!:.~n~:spUI"
(8.3

~ 1K

Forward Pulse Current vs. Pulse Duration
10K

wave eQuivalen t
square wave)

----

...

~
or
or
:>
u

~

'i'!!1
100

t§
~

(8.3 ms sine wave equivalent
to 3 ms square wave)

1K

~ 100

..J

:>

:>

Square Pulse CUrrent vs
Duration for Non-Repetitive Pu Ise

-

uG"'se
uN n:;,.eS....

;;:~~es
==

0..

10
.I.uS

WWll
I.S
10"S
100"S
ImS
PULSE DURATION (SECONDS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10m$

10mS

7-45

PRINTED IN U.S.A.

UGB, UGD, UGE, UGF SERIES

Multiple Surge Rating vs. L"uation

'"z
;:

~ 100

.......

UJ

~ 80

1"'--1"-

:l

'"o
§

b,

60

UJ

40

I

UJ

g;

20

1

"-

~

°1

10
100
CYCLES AT 60 Hz. HALF SINE WAVE

Typical Forward Voltage
vs. Forward Current

, .'.
10K

~ 200
u
0

0:

/

100
50 I---

«
~

0:

20
10

u

J::'g;,l?

UJ

'"

«
«
UJ

"

I

I I

..J

~

/ II I I

1

a

I

.5

50
100

10K
UGE, UGF SERIES//.

I

...

- 500
~ 200
0:
:l lOa

u
o

50

~
0:

20

0:

fi:

L VI,
II I

~

...Z

I

II

o

.25

I

t!1

«

"«

UJ
..J

j.,...-

.05
.1

50'C

.2

-

.5

10
20

/"

50
100
200
IK

1.25
1.5
FORWARO VOLTAGE- MULTIPLY V, BY:

./
+25'C

___ +75'C

500
.75

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

o

25

UGE, UGF SERIES

r--

UJ

II
.5

75
50
% OF PIV

UJ

I I
I I I

IlL

100

0:
0:
:l
U

,/1 1

10

I

.01
.02

11:44j;!t
fi: '" /'

Z

V
+125'C

Typical Leakage Current VS. PIV

1/

1 1

E

L
+75'C

I
125

Typical Forward Voltage
VS. Forward Current

2K

..-

500
lK

J I

;; lK

-

5
10
20

200

.25
.5
.75
I
1,25
1.5
FORWARO VOLTAGE- MULTIPLY V, BY:

5K

L

___ +25'C

UJ

~'ill!
q:.:;:. !fIt
/

50'C

0:
0:
:l

u

"-

0

...
Z

II

I /

..,/

:(

'II 1

z

UGB, UGD SERIES

.05
.1
.3 .2

/ V/
JI II I

lK

.s... 500
0:
:l

.01
.02

V/; '/

2K

;;

Typical Leakage Current VS. PIV .'

UGB, UGD SERIES

5K

1,000

125

100

75

-

50

~5'C
25

o

% OF PIV

7·46

PRINTED IN U.S.A.

UGB, UGD, UGE, UGF SERIES

Output Current Ratio

vs. Velocity of Air Flow

Current Derating Curve

~ 1.75

~

0:

1.50

"'~ 1.25
fJ')

u
~ 1.00

."'

./

.75

...J

:J

::;; .50

I

V

"z~

V

50

r-~~~---+--'~'t,~,--~~r-~---l

#

/

...J

;::

V

OL-~

o

__- L_ _L - - . . . l_ _- L_ _L - - . . . l_ _
50

~

200

AMBIENT TEMPERATURE ('C)

100
V-

200

300

400

500

tiOO

VELOCITY OF AIR CLFM)

Current Derating Curve

Current Derating CUNe

100

100

I·...

"

"
«
0:

150

.25

'"

"z;::

100

z"
;::
«
0:

"
50

#

"

"
,,

50

#

,
I
I

0

0

50
ISO
100
CASE TEMPERATURE C'C)
Air Cooled

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

0

200

0

50

100

150

200

CASE TEMPERATURE C'C)

Oil Immersed

7-47

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

US12-US200A
USR12-USR180A

High Voltage Stacks, .125 Amp to 1 Amp,
Standard and Fast Recovery

FEATURES
• Controlled Avalanche Characteristics
• Recovery Times: to 500ns
• Transfer Molded for Voidless Encapsulation
• High Forward and Reverse Surge Capability
• PI V: from 1200 to 20, OOOV
• Only Fused-in-Glass Diodes Used

DESCRIPTION
This series of High Voltage, Medium
Current Stacks are assembled from
hermetically sealed, controlled avalanche
individual diodes. Therefore, they offer
the ultimate in reliability for such applications as clipper diodes, back swing
diodes and hold-off diodes in pulse
modulators.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage .....
Maximum Average D.C. Output Current
Non-Repetitive Sinusoidal Surge (8.3ms)
Operating and Storage Temperature Range .

Output Current Ratio vs
Velocity of Air Flow
2.50 r--r--.----,,---,---.---,

"~ 2.25 t--+-+--1f----+--J::;,"'"
~

........... .. ....... 1200 to 20,000V
....... See Electrical Specifications
............................................ 20A
............... _65°C to +lSOOC

~ 100

:3~

... 80

0:
0:
:l

..

!!: 2.00

o 60

...~ 1.75 t--+-+-AI--?l-

o
a

:-rs"c /

...~ .0 1

/

.0

.005
.002

~
Iz

'"~

II II
I I

1

~ .0

3:

'j

/ / /1/

I-

Z

/ f

.2

.4

o

a

/; VI

.5

I

.2

~

.01
.005

-~"C

+17S"C

+1~"Ct

.002

I
.6

US SERIES

.8

FORWARD VOLTAGE -

1.0

1.2

/

.001
1.4

MULTIPLY V, BY,

I /

/

'"a:a:
0

;2

i'...I:i

10
20

500

I USR SERIES

--

so
200

I

I
I

~C
'1 -I

V
+12S"C

I

US AND USR SERIES

120 110 100 90 80 70 60 50 40 30 20 10 0

.2
.4
.6
.8
10 1.2 1.4
FORWARD VOLTAGE - MULTIPLY V, BY,

% OF P.I.V.

Multiple Forward Surge Rating

(!J

z

~
a:
~ 100

a:

~ 80

a

~

~

~

'" 60

~

u::

US
200
~
100
~ t--..
50 - IUSR/
~
20
~
10
0.1,u5
l.us
lO,u:s
lOOJ,ls
Ims
lOms

'i

.'"

~

40

... 20

I----....

o

I

'if
10

DURATION

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

(!J

1 II I -so~c

sooo - DUR~~I~/i.r8:~W/E~~~I~~JEV~uLSE 2000
1000
~
~
500
-....;::
I-

:>

f..-

0

'"

100

10000

z

:>

+25"C

Forward Pulse Current vs Duration

+~S"~-

z

'"a:a:

I

~

- i - f..-

.:1- .5

/ II / I

.02

.2

I-

III II I
I /

.1

~

a:

;(

I VI II

a: .05

/ I

/ /

.001

:>

I. 1 +2S"C

+ITcl 7 I

.1

10V

100

1,000

CYCLES AT 60Hz HALF SINE WAVE

7-50

PRINTED IN U.S.A

US12-US200A

USR12-USR180A

MECHANICAL SPECIFICATIONS

B

~

====e::::::B==

c

I.-A +c=:::J
B
I

0

-0/1+-

c=D

D

.1

~A~

BODY SA

}
c

BL

BODY SB

0

0
-.J~

C

BODY SC

D

jA-i Bl

D

===lc=J=t===tc

BODY SD

IAIB~
~=.rl--I~=t

(

c

\)
BODY SE

D

lG
-ill

==200\1"
<,,' ,:',

676-2

698-2

684-2

683-2

676-3

698-3

684-3

683-3

676-4

698-4

684-4

683-4

676-5

698-5

684-5

683-5

676-6

698-6

684-6

683-6

Gor S
Gor S

GorS

GorS

Gor S

GA
GA

GA
GA

GA

NA
NA
NA

NA
NA

802-1

MA

MA
MA

NB
NB
NB

NB
NB

676-12
HJ

676-18
HK

; 2;:4\

676-36
HN

'4;OkV

4,?kV

676-42
HO

4i,8kV< 676-48

<, ' .

HP

'5.01<11.>

676-50

.!.

HP

,mv;

~~,~,~•• ·50~
Parentheses (

) designates product uSIng stacked chips

8-4

PRINTED IN

u.s A

PRODUCT SELECTION GUIDE

Three Phase FUll-Wave Bridge

STANDARD RECOVERY
Peak

Inverse

Voltage
Per leg

FAST RECOVERY

AVERAGE D.C. OUTPUT CURRENT
I-3A

4.S-15A

IS-2M

Peak

700-1
F

695-1

NC

10dV

678-1

NC

'.

'~

G

ME

AVERAGE D.C.· OUTPUT CURRENT

Inverse

Voltage
Per leg

I-SA

4.S-1SA

I5-25A

SOV

SOV
100V

~NC

.
~

2S-40A

801-1

800-1

801-2

800-2

ME

701-1
F

696-1

NC

682-1

NC

ME

ME
ME

12SV

125V

801-3

800-3

l50Y

150Y

801-4

800-4

50ns

SOns

200V

700-2
F

695-2

678-2

300V

700-3
F

695-3

678-3

400V

700-4
F

695-4

678-4

500V

700-5
F

695-5

678-5

600V

700-6
F

695-6

678-6

NC
NC

NC
NC
NC

NC

483-1"

ME

NC
NC

483-2"

ME

NC

NC

483-3·

ME

701-2
F

696-2

682-2

300v

701-3
F

696-3

682-3

400V

701-4
F

696-4

682-4

SOOV

701-5
F

696-5

682-5

600V

701-6
F

696-6

682-6

500ns

500ns

500ns

2.SkV

5.0kV

3.0kV

7.SkV

4.0kV

lOkV

5.0kV
Reverse

n::rn:.)
Parentheses (

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

ME

200V

2.5kV

... Available as JANTX
Parentheses ( ) designates product using stacked chips

ME

8-5

NC

NC
NC

NC

NC

ME

ME

NC

NC

NC

NC
NC

) designates product using stacked chips

PRINTED IN U.S.A.

•

RECTIFIER BRIDGES
Doublers and Center-Tap Rectifiers

9
'~

n\:~;:j
,;~t:

M·l

~2

a

~

lirTO-220AB

~TO-3

USD335C

USD635C

USD735C

TO-220AB

TO·220AB

TO-3

USD640C

USD740C

USD345C

USM140C

USM20040C

TO-220AB

TO-220AB

50241
TO-3

M·1

M-2

USM145C

USM20045C

USD645C

TO-220AB

USD745C

TO-220AB

~NO

M-1

M-2

USM150C

USM20050C

M-1

M-2
681·1

NO

681·2

NO

681·3

NO

681·4

NO

681·5

NO

681·6

NO

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

8·6

PRINTED IN U.S A.

RECTIFIER BRIDGES

Doublers and Center-Tap Rectifiers

~

~NO
FAST RECOVERY

Peak

~TO-3
UJ.TRA.fAST RECOVERY

SUPER FAST RECOVERY

~~r-____~r-______r-~______
AVT~~·_E~n_'C_'_O_U_~-T._~
___RE_N~.T__~r-~__~~~---------1
Per lAg

1-:-2A

2-15A

. 'loA

25A

16A

20A

lOA

20V
35V

689-1

NO

SES5401C*

SES5601C*

UES2401 *

804-1

UES2601

TO·220AB

TO·3

TO·220AB

MF

TO·3

SES5402C*

SES5602C*

UES2402*

804-2

UES2602

TO·3

TO·220AB

TO·220AB

MF

TO·3

804-3

MF
.1~
':',. /,::,,:

689-2

NO

SES5403C*

SES5603C*

UES2403*

804·4

TO·220AB

TO·3

TO·220AB

MF

SES5404C*

UES2404*

TO·220AB

TO·220AB

UES2603

TO·3
UES2604

TO·3

689-3

UES2605

689-4

UES2606

NO

TO·3

NO

TO·3

·Center·tap only

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

8-7

PRINTED IN U.S.A

II

RECTIFIER ASSEMBLIES

JAN & JANTX 469-1
JAN & JANTX 469-2
JAN & JANTX 469-3

Single Phase Bridges, 10 Amp,
Military Approved
FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This series of military high-current
single-phase bridge offer the utmost in
reliability as required in military system
designs. The TX series is assembled
with diodes which have been subjected
to 100% screen i ng tests.

Qualified to MIL-S-19500/469
Current Rating: to lOA
PIV: from 200 to 600V
Surge Ratings: to 100A
Only Fused-in-Glass Diodes Used
Controlled Avalanche Characteristics
Aluminum Heat Sink Case, Electrically Insulated

Dimensions
INCHES
Ltr

ABSOI,UTE MAXIMUM RATINGS
Peak Inverse Voltage
Maximum Average D.C. Output Current
@Tc=+55°C
@Tc = +1OO°C.
Non-Repetitive Sinusoidal Surge (8.3ms)
@Tc=+55°C ..
Operating and Storage Temper
u

c
a::
..:
~
a::
0

u.

I

.5
.2

I1I1

10JCk
u
'8
-}:.;:'+55

=>
u

II')

1/1/

.05

II

-~

.01
.005
.002 0

II
.2

1/

I

...-

.5

"'zw

'"'"
;;)
<)

0

~'"
'0..."

~
+-,:;:

8,0

.5

~

z

w

a:
a:
;;)
u

"..
..'"

&

UJ

1- I

.1

.05

.2

I"
.4

.5

~

10
20

-

J..---

125
1.2

"50

\.

+75'C

a

a

I

500
IK

.8

"z
~
'"If.

'\.

\.
./

I
.6

/'
1--+25'C

50
lOa
200

//
/I /

.2

.05
.1
.2

UJ

oJ

lOa

"""50'C

.01
.02

1
...

!/V
II /,
/ / '/
AO iJt
/

S

Current Derating Curve

Typical Leakage Current YS: PIV

50
100
ISO
CASE TEMPERATURE ('C)

175

V
+125'C

I

50
100
75
% OF PIV

25

1.4

FORWARD VOLTAGE (V)

I

Discrete diode
inspection lot

~

100 Percent process conditioning
of discrete diodes

:-----t

I. High-temperature storage

100 Percent burn·in of discrete
diodes
I. Measurement of specified
parameters

2. Thermal shock (temperature
cycling)

2. Reverse bias burn·in

3. Reverse·recovery time

3. Measurement of specified
parameters to determine
delta
4. Lot rejection criteria
based on rejects from
burn·in test

:-----t

Assembly and
encapsulation of
discrete diodes
into bridge
assembly

1
Inspection tests
to verify l TPO
Group A
Group B
Group C

1
Review of groups
A, B, and C data
for lot accept or
reject

J
Preparation for
delivery
UNITRODE CORPORATION 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

8-11

PRINTED IN U.S.A

•

RECTIFIER ASSEMBLIES

673,676 SERIES

Single Phase Bridges, 1.5Amp,
Standard and Fast Recovery
DESCRIPTION
These miniature transfer-molded singlephase power bridges are designed for
universal application in power supplies.
One basic bridge assembly comes in a
choice of lead configurations for mounting
in wired chassis or on printed boards.

FEATURES
• Miniature Package
• Surge Ratings: to 25A
• PIV's: from 100 to 600V
• Recovery Times: to 500ns
• Controlled Avalanche Characteristics
• Only Fused-in-Glass Diodes Used

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage.
Maximum Average D.C. Output Current
Non-Repetitive Sinusoidal Surge (8.3mS)
Operating and Storage Temperature Range .
Thermal Resistance Junction to Ambient

.. 100 to 600V
. See Electrical Specifications
.... See Electrical Specifications
............... -65°C to +150°C
............ 50°C/W

MECHANICAL SPECIFICATIONS
673,676 SERIES

.028" Dia.

G BODY

O.71mm

1.25" Min. long
31.Bmm
Tinned Copper

O.32~ +
____ AC
S.13mm

Lead

-1

~O.1S"

I

Max.
3.S1mm

AC
_

.125" ±.030
3.18mm ±.76

0.32" Max.

Typica. Weight G:

8.13mm

0.05 ounces
1.4 grams

673, 676 SERIES
440" Max.
1117mm

mr

S BODY

.187" Max.

4.7Smm

ll~ M~
AC-AC

.100·· Typ. --

~

.
5

100 200 300

400

500

i

600

...

~

a

o

40

o

~

1\
20 40 60 80 100 120 140 160 180

AMBIENT (AIR) TEMPERATURE (·C)

V - VELOCITY OF AIR (LFMi

60

:>

'" 20
P

80

a:

\

o

"B~DY J IthrOulgh

Output Current vs
Ambient (Oil) Temperature

:J

§.loo

:>

V .....--- ~

01.75

:>
::E 1.25

tS

a:
a:

Output Current vs
Ambient (Air) Temperature

20

a:

...

o

...

20 40

'\
'\
"\

\.

\

I

60 80 100 120 140 160 180

AMBIENT (OIL) TEMPERATURE (·C)

Application example: The rectifier is to be used in a cabinet at 60·C with ambient
air moving at 400 LFM. The rating is reduced (Fig. 2) by a factor of 0.81 due to the
elevated temperature, but is enhanced by 2.X (Fig. 1) due to the air flow. Hence
the DC output current is 0.81 x 2, or 1.6 times the 25·C air rating.
Reverse·Recovery

CirCUit

lKU

+
20V D.C.

990n

D U.T

lOll

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

8-15

PRINTED IN U.S.A.

673, 676 SER I ES

Typical Forward Voltage
Forward Current

YS

Typical Forward Voltage
Forward Current

10

10

673 SERIES

676 SERIES

;j ~j

5

.5

~

.2

z>-

~

"
0:

~

IV

.1

:-r

5 'c

.0 I

.005
+ll7
.0-02
.00 I

~
z>-

1 1

I

.1

"«

.05

III 1//

I

;;: .02
0:

""-

I I

I I

:::>
0:

+25'C

.2
.4
.6
FORWARD VOLTAGE -

IVI II

.2

(J

I II LI Ii1

711

/; VI

.5

'"0:0:

1//.II

.0

~ .0

f0 '/

1/ 'j
/ i/

0:

YS

tl75'C

.01

11

.005
-5r C

tlOrcT
.002

I

.001

-

Typical Leakage Current
.01

I-

.02
.05
.1
.2

>z

.5

.:;

I-

'"0:0:

:::>

'"'"-'«

/
II

~
/

+25'C

-50~C

I

YS.

Voltage

10'6

~
+~5'~-

:.- ~C

(J

'"«Cl

I

1

I

j

.2
.4
.6
.8
10 1.2 1.4
FORWARD VOLTAGE- MULTIPLY V, BY:

1.0 1.2
1.4
MULTIPLY VF BY:
.8

;(

/ I

L

II /

i

10
20
50
100
200
500

_i--"

I

Y

+125'C

I

I
I

120 110 100 90 80 70 60 50 40 30 20 10 0
% OF P.I.V.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

8-16

PRINTED IN U.S.A.

678,682,695
696 SERIES

RECTIFIER ASSEMBLIES
Three Phase Bridges, 15-25 Amp,
Standard and Fast Recovery Magnum ®
FEATURES
• Current Rating: to 25A
• PIVs: from 100 to 600V
• Only Fused-in-Glass Diodes Used
• Recovery Times: to 500ns
• Controlled Avalanche Characteristics
• Surge Ratings: to 150A
• Aluminum Heat Sink Case, Electrically Insulated

DESCRIPTION
This series of three phase MAGNUM ®
bridges offer the ultimate in high current
power supply applications. The fast
recovery series allows operation at full
power at high frequencies (up to 40KHz
squarewave), often used in choppers,
inverters and converters in aircraft,
missiles, etc., equipment.

II

ABSOLUTE MAXIMUM RATINGS
....... 100 to 600V
Peak Inverse Voltage
See Electrical Specifications
Maximum Average D.C. Output Current
Non-Repetitive Sinusoidal Surge (8.3ms)
.... See Electrical Specifications
Operating and Storage Temperature Range
.......... ---65'C to +150'C
Thermal Resistance Junction to Ambient, All Series ..
..... 20'C/W
Junction to Case, 678, 682 Series .
1.5'C/W
Junction to Case, 695, 696 Series.
.. .. 3.0'C/W

MECHANICAL SPECIFICATIONS
678, 682, 695, 696 SERIES
ins.
A
B

e
D
E
F

G
H
J
K

L

.820 MAX.
.09 DIA. TYP.
.164-.174 DIA.
.365-.385
1.870-1.880
.740 .760
.370-.390
.040 TYP
.486-.506
115-.135
2.240-2.260

NC

mm.
20.83 MAX .
2.29 DIA. TYP.
4.17-4.42 DIA.
9.27-9.78
47.50-47.75
18.80 19.30
9.40-9.91
1.02 TYP
12.34 12.85
2.92-3.43
56.90 57.40

Typical weight - 30 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

Magnum® is a registered trademark of Unitrode Corporation

8-17

~UNITRDDE

678, 682, 695, 696 SER IES

Electrical Specifications (at 25·C unless noted)

Maximum Ratings

Maximum
Maximum
PIV
Per
Leg
Volts

Type

Standard
Recovery

678-1
678-2
678-3
678-4
678-5

100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400
500
600

678~

Standard
Recovery

695-1
695-2
695-3
695-4
695-5
695~

Fast
Recovery

682-1
682-2
682-3
682-4
682-5
682-6
696-1
696-2
696-3
696-4
696-5
696-6

Fast
Recovery

Maximum

Leakage
Current
Per Leg@ PIV
TA - 25·C
TA -lOO·C
p.A
/LA

Forward
Voltage Drop
Per Leg

Average

Maximum
Reverse

Non-Repetitive
Sinusoidal
Surge (S.3ms)
TA _lOO·C

D.C. Output

Current

Recovery

Tc _ 55·C

Time*
ns

Tc _lOO·C
Amps

Amps

Amps

1.2V@10A

10

200

-

25

18.5

150

1.2V@2A

5

150

-

15

9

80

1.2V@6A

10

200

500

20

14

150

1.2V@2A

5

150

500

15

9

60

*Measured in a reverse recovery circuit switching from 1.OA forward to 1.OA reverse current recovering to O.SA.

Typical Forward Voltage Per Leg
VS. Forward Current
30

~ r;
II V/

10

+175'~i
I 100,6

::>

u
o

~

/L II

....z~ 11---+-+--+7'-I-1+--I+--t---1

1-+25'C

~

0:

.5

0:

~
.2
.1
.05
.02

I
.2

.5

r--+--r-f+i-f~-+-4-~

::>

// I I
III / I
/I
II
I I

0:

V.

~ .2

1--+--+f-lhHf--+-+--j

~

~

...

1/ /1/

~
....
z

I

.5

OJ

/ II

.2

0:
0:

B

h.,0
~ c:s0~0(J
~"
....,
rv
"1-:;:-1-,

.1

0

~ .05

u

~0:

o

II /

.02

II

.... 01

.1

I

.005
.05

f---+-++I'-t-+l--+-+---1

.02

1--+f--+---I-+--cH--+-+--j

I

.002
.001

I

.4
.6.8
1.2
FORWARD VOLTAGE (V)

VV v/

695, 696 SERIES

/

II It c--Jo'c

0:
0:

10

////

678 SERIES

20

~
....
zOJ

Typical Forward Voltage Per leg
VS. Forward Current

Typical Forward Voltage Per Leg
vs_ Forward Current

1.4

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

.2

.4

.6.8

1.2

.2

II

II

I

II

.4
.6.8
1.2 1.4
FORWARD VOLTAGE (V)

1.4

FORWARD VOLTAGE IV)

8-18

PRINTED IN U.S.A.

678,682,695,696 SERIES

Typical Leakage Current vs. PIV

I......

I- 695, 696 SERIES

50°C

/'

_____ +25°C
1
1

../"

___ ,P5°C

V

_

125

100

75

+125°C

50

25

% OF PIV

•

Reverse Recovery Circuit

SQ

41l

10V D.C.

D.U.T.

W

SCOPE

=

Current Derating Curve

Current Derating Curve

100

100
55°C

'l"'4..

CJ

),'

z

~

a:

696 SERIES

50

I

682 SERIES

55°C

,

CJ

~

a:

if

695 SERIES

50

o

150
100
50
CASE TEMPERATURE (OC)
Fast Recovery Series

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

~

" ';"

if

1'\

I"

o

678 SERIES

-;;':-1..
-}-~

z
~

"

o

175

8·19

o

150
50
100
CASE TEMPERATURE (OC)
Standard Recovery Series

175

PRINTED IN U.S A

679,680,683,684 SERIES

RECTIFIER ASSEMBLIES
Single Phase Bridges, 10-25 Amp,
Standard and Fast Recovery Magnum™
FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This series of single phase MAGNUMTM
bridge offers the designer the ultimate in
high current power supply applications.
The fast recovery series allows operation
at full power at high frequencies, up to
40kHz square wave, which is often used
in chopper, inverters and converters in
aircraft, missiles, etc., equipment.

Current Ratings: to 25A
Recovery Ti me: to 500ns
PIVs: from 100 to 600V
Surge Ratings: to 1SOA
Only Fused-in-Glass Diodes Used
Controlled Avalanche Characteristics
Aluminum Heat Sink Case, Electrically Insulated

ABSOLUTE MAXIMUM RATINGS
. 100 to 600V
Peak Inverse Voltage.
Maximum Average D.C. Output Current .
..... See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms)
..... See Electrical Specifications
Operating and Storage Temperature Range .
.............. -65·C to +lSO·C
Thermal Resistance Junction to Ambient, 679, 683 Series
.. 20·C/W
Junction to Ambient, 680, 684 Series . ..
.............. 25·C/W
Junction to Case, 679, 683 Series .
... 2.0·C/W
Junction to Case, 680, 684 Series
4.0·C/W

MECHANICAL SPECIFICATIONS
680, 684 SERIES

'f'
"""~'
~

Typical Weight -

'"

mm .

ins.
A
B

C
D

E
F

G

NA

.240 MAX.
.57 MAX.
.040 TYP.
.750 MAX.
.750 MAX.
.140 DIA.
.09 DIA. TYP.

6.10 MAX.
14.45 MAX .
1.02 TYP.
19.05 MAX .
19.05 MAX.
3.56 DlA.
2.29 DIA. TYP .

Typical We,ght
10 grams

0.35 ounces
10 grams

679, 683 SERIES

~F- I-G
E1

l

i

I

~-lb

UriflU
IOLtJ=

..l...

+-.L

U

~K

,"' ,

A

Typical Weight -

I
0.7 ounces

r

A
B

C
0

E
F
G

TINN~D cU"1r

-r-~

ins.

H

L

-I~M

J
K

L
M

.328 MAX.
.750 MAX.
.04QTYP.
1.125 MAX.
.562
1.125 MAX.
.193
.562
.500
.09 DIA. TYP.
.062
.062

NB

mm.
8.33 MAX.
19.05 MAX.
1.02 TYP.
28.58 MAX.
14.27
28.58 MAX.
4.90
14.27
12.70
2.29 DIA. TYP .
1.57
1.57

20 grams

8-20.

~UNITRDDE

679,680,683,684 SERIES

Maximum Ratings

Electrical Specifications (at 25'C unless noted)
Maximum
Leakage
Current
Per Leg @ PIV

Maximum
Forward
Voltage Drop
Per Leg

PIV
Per
Leg
Type

100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400

679-1
679-2
679-3
679-4
679-5
679-6
680-1
680-2
680-3
680-4
680-5
680-6
683-1
683-2
683-3
683-4
683-5
683-6
684-1
684-2
684-3
684-4
684-5
684-6

Standard
Recovery

Fast
Recovery

Fast
Recovery

Non-Repetitive
Sinusoidal
Surge (8.3ms)
TA _IOO'C

TA _ 25'C

TA-lOO'C

"A

"A

ns

Amps

1.2V@10A

lO

200

-

25

18.5

150

1.2Y@2A

2

50

-

lO

6

50

1.2V@6A

10

200

500

20

14

150

1.2Y@2A

5

100

500

10

6

50

Volts

Standard
Recovery

Maximum
Average
D.C. Output
Current

Maximum
Reverse
Recovery
Time*

Tc _ 55'C

Tc - lOO'C
Amps

Amps

SOO
600

"'Measured in a reverse recovery circuit switching from l.OA forward to 1.0A reverse current recovering to O.SA.

Typical Forward Voltage Per Leg
VS. Forward Current
30
20

iLL" EL

III 1/

~
....
zOJ

+lW~1..
I
I
100'C

~

VL I

....~

_+25'C

a::

o

u.

.2

.1

III

.05

I

.02
.2

1

1--1--+---hhft-JY't--I--1

z

OJ

c:
c:

OJ

'"

'"u::>

// I
III / I
II

.5

....

z

II lit --Jo'c

a::
a::
::>
u
o
a::

.5

1--1--+......,f+f-ft-f-+--I--1

ltlL JL
/

.5
.2

B

~ .2

f--t--hl--ft-++--j--f--t

U

....,

"

L.J..

~ .1

.01

1--1--1-++--+-+-+--+--/--1

.02

1--1+--+-1++-+--+--1--1

I
II

.002
.001

J
1.4

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6l7) 861·6540
TWX (7l0) 326·6509 • TELEX 95-1064

.2

.4
.6.8
1.2
FORWARD VOLTAGE (V)

8·21

I

II

.005
.05

0

C)

11/

"~ .02
o

I1I1I1

!//..J
!:! 0~()
t, "
rv
1- :;: 1- I

.1

~ .05

:;;;

I

.4
.6
.8
1
1.2
FORWARD VOLTAGE (V)

/ / VV
V

680, 684 SERIES

0V

10

~

10

10

,IV';';

679 SERIES

Typical Forward Voltage Per Leg
VS. Forward Current

Typical Forward Voltage Per Leg
vs. Forward Current

o

.2

I

l

I

II

.4
.6.8
1.2 1.4
FORWARD VOLTAGE (V)

1.4

PRINTED IN U.S A

•

679,680,683,684 SERIES

Typical Leakage Current vs. PlY
.05
.1

Typical Leakage Current vs. PlY

Typical Leakage Current vs. PlY

..l;;;:c-

679,683 SERIES

1./

684 SERIES

.01
.02
.05

;t

.3

...

.5
1

UJ
0:
0:

(J

UJ

f.--"'+75'C

50

'~" 100

'"

«

UJ

-

oJ

SOO
1K

125

100

75

-

(J

"«
oJ

+125'C

.02

~

+75'C

10
20

_

25

125

% OF PIV

100

.2

(J
UJ

.5

-~5'C
I

";2

/

;;'i

---+75'C

oJ

../

10
20
50
100

+125'C

50

75

.1

~

500
1K

so

50'C

z

/'

50
100
200

....Y

,/

.005
.01

... .05

.5

::l

./

~

./
______ +25'C

.2

UJ
0:
0:

I

10

UJ

"«

...z

./
_.--+25'C

z

::l

;t
.3 .1

680 SERIES

.001
.002

50'C

1

~'C
i

125

25

100

75

50

25

% OF PIV

% OF PIV

Reverse Recovery Circuit
UZ 640
51)

41)

10V D.C.

D.U.T.

5V D.C.

SCOPE

Current Derating Curve

Current Derating Curve
100

100

55'C

z"
~
0:

"

f.~

"z

1','

680 SERIES

50

~
0:

~

...

~

'if.

o

a

~

55'C

679 SERIES

50

~,

683 SERIES

';,,,,

'k'
684 SERIES

50

,
~

~~

'if.

"'

1"\

100
150
CASE TEMPERATURE eC)
Standard Recovery Series

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

...

a

175

o

50
100
150
CASE TEMPERATURE ('C)

175

Fast Recovery Series

8-22

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

681,689 SERIES

Doubler and Center Tap, 15 Amp,
Standard and Fast Recovery, Magnum®
FEATURES
• Current Ratings: to 15A
• Aluminum Heat Sink Case, Electrically Insulated
• Only Fused-in-Glass Diodes Used
• Controlled Avalanche Characteristics
• PIV: 100 to 600V
• Surge Ratings: to 150A

DESCRIPTION
This series of MAGNUM ® doublers and
center tap rectifiers offers high current and
high thermal conductivity needed in high
current power supply applications. The
MAGNUM®' package is virtually indestructable and lends its use to high
environmental stresses, as seen in aircraft,
missile and satellite equipment.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltages .
Maximum Average D.C. Output Current
@Tc=+55°C
@Tc=+lOO°C
Non-Repetitive Sinusoidal Surge (8.3ms)
@ TA = +100°C .
Operating and Storage Temperature Range.
Thermal Resistance Junction to Ambient
Junction to Case

.. 100 to 600V

II

15A
lOA
....... 150A
-65°C to +150°C

.................. 20°C/W
... 6.0°C/W

MECHANICAL SPECIFICATIONS
681, 689 SERIES

.,

~_"_2.260 _ _ - - - - "

I

:~~~DIA.

fo-

2240

L:::@ ,

~I= = ]01
~

(2 PLACES)

1.490---1

1
----,
.354

-].480

.09 OIA. TYP.,:

~

liD" •

334

-4:-TlNNED

cu .. 040 TYP.

"P"

~

~--'---T~60
I, Ir'L.....---"---''--,1 ~ J.. .322 MAX.

W~~_ _ _ _ _ _~~'I ~~

I

AC

I

.1

+

+

.1

I

~

AC

AC

AC

"N" _.-----M~I----'-----I.~I-

.1351
115

Orientation of terminals shown for "D" For "P" or "N" center
terminal IS at 90 0 from the AC terminals

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

.

AC

ND

Typical Weight - 0.3S ounces
10 grams

t Add suffix P, N, or 0 for terminal

Magnum® is a registered trademark of Unitrode Corporation

configuration P, N, or D.
For example, for center tap
configuration, P, order 681-IP.

8-23

~UNITRDDE

681,689 SERIES
Electrical Specifications (at 25°C unless noted)

PIV
Per
Leg

Type

Reverse
Recovery
Time*

Volts

Standard
Recovery

681-1
681-2
681-3
681-4
681-5
681-6
689-1
689-2
689-3
689-4
689-5
689-6

Fast
Recovery

Maximum
Leakage
Current
Per Leg@ PIV

Maximum

Maximum
Forward
Voltage Drop
Per Leg

TA

nS

100
200
300
400
500
600
100
200
300
400
500
GOO

1.2V@lOA

1.2V@ lOA

500

TA = 10(}OC

= 25°C
p.A

p.A

10

200

10

200

*Measured in a reverse recovery circuit from lA forward to lA reverse current recovery to O.SA.

Typical Forward Voltage Per Leg
VS. Forward Current
10

Typical Leakage Current vs. PIV

VL 1/

+175°C-

~

I

r--

I-

+10(}OC,--J

~1ft
U

/ II
1// i/
I / I I
I

Z

UJ

'"
0: .5
:>
u

~ .2

g~

.1

...

.01

.5

..,/

I--""" +25°C

I-

50°C_

Z

UJ

0:
0:

:>
u

10

./

UJ

"«
«
UJ

'"

1---:j.75°C

50
100

oJ

/ II

.05

.02

~

+25°P

/

J;;c

.05
.1

II!, /

500
1K

/11

:--125

II

I

.2

.4

100

75

50

Y

+125°C

25

% OF PIV

I
.6

.8

1.Q

1.2

FORWARD VOLTAGE (V)

Reverse-Recovery Circuit
UZ840

Current Derating Curve
100
55°C

"

"

z

~

+

1',

10V D.V.

sV D.C.

50

'"#-

1',
o

o

50
100
150
CASE TEMPERATURE ("C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

175

8-24

PRINTED IN U,S.A.

RECTIFIER ASSEMBLIES

697,698 SERIES

Single Phase Bridges, 7.5 Amp, Standard
and Fast Recovery
FEATURES
• Miniature High Current Assemblies
• Continuous Ratings: to 7.5A
• Surge Ratings: to 80A
• PIV's: from 100V to 600V
• Recovery Times: to 500ns
• Only Fused-in-Glass Diodes Used
• Controlled Avalanche Characteristics

DESCRIPTION
These miniature molded high-current
single-phase bridges are designed for universal application in power supplies. One
basic bridge fills current requirements up
to 7.5A, with PIV's from 100 to 600 volts and
recovery times of standard, and 500ns max.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
Maximum Average D.C. Output Current
Non-Repetitive Sinusoidal Surge (8.3ms)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Junction to Case

II

100 to 600V
See Electrical Specifications
See Electrical Specifications
-65'C to +150'C

. 32'C/W
lO'C/W

MECHANICAL SPECIFICATIONS
697, 698 SERIES

GA

B

C

o -j
Tinned Copper

lead

r

A
B

C
0
E
F

TYpical Weight -

Ins.
0.50'.01
.032 DIA.
LO MIN.
.250 MAX.
. 150 TYP.
0.50' 01

mm.
12.70 •.25
0.81DIA .
25.4 MIN.
6.35 MAX .
3.81 TYP .
12.70'.25

0.14 ounce.
4.0 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

8-25

~UNITRODE

697,698 SERIES
Electrical Specifications (at 25°C unless noted)

Type
Standard
Recovery

697-1
697-2
697-3
697-4 .
697-5
697-6
698-1
698-2
698-3
698-4
698-5
698-6

Fast
Recovery

Maximum
Forward

PIV
Per
Leg
Volts
100
200
300
400
500
600
100
200
300
400
500
600

Voltage Drop
Per Leg

Maximum Ratings

Leakage
Current

Maximum
Reverse
Recovery
Timet

Per Leg @ PlY
TA = 25'C
TA = 100°C
~A

5

200

l.lV@2A

5

200

Non-Repetitive
Sinusoidal
Surge

D.C. Output
Current

TA = 25'C
Amps

ns

~A

1.0V@2A

Maximum
Average

500

(8.3ms)
Amps

Tc=55°C
Amps

2.5

7.5

80

2.25

7.0

70

tMeasured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to .SA.

10

;'J/j
$

698

~.05
~

+-

/

15 .02

II'

.01

II

.005
.002

II

.001
~

A

•

I

~

I

I

.002

I

FORWARD VOLTAGE

lA

(V)

.2

A

.6

Typical Leakage Current VS. PIV
ALL SERIES

.01
.02
.05
.1
:;c .2
.:;
Iz .5

./
50'C

./
--+25'C

'"0::0::

:>
u

.."""'.
"'

I

..J

I

.001
1~

i

I

I

.01

.005

1

,

:;:.:; "/- I

15 .02

il

II

ilklff,~!~
II

I
I

C
~.05

"-

~

VI IV
/ /

'"

I

I

1

.5

~ .2
:>
u .1

II

II

$
I-

z

(,J<.JU

C

VV' VV'
/ / /[/

1---1//J
I
:;:.ij~~f~f~
:;:. + I

.2

SERIES

i

III 1/

.5

:>
u .1

"-

10

}'/ '/

SERIES

697

!!:
'"~

Typical Forward Voltage Per Leg
vs. Forward Current

Typical Forward Voltage Per Leg
vs. Forward Current

II

V
,........ +75'C

10
20
50
100
200
500

V

I--"" +125'C

1.000
.8

1

FORWARD VOLTAGE

1.2

100

150

1.4

50

% OF PlY

(V)

Reverse Recovery Circuit
Current Derating Curve
50

+

,
, , 55'C

100

40

" ,

D.C.

~

D.U.T.

,

,,

SCOPE

I

o

UNITRODE CORPORATION' 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

I

,, ,

50

~

10

,

,CASE TEMP.
, ,
FREE AIR

"Z

10V

,

8·26

:
o

50

150
100
TEMPERATURE ('C)

200

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

700, 701 SERIES

Three Phase Bridges, 2.5 Amp, Standard
and Fast Recovery
FEATURES

DESCRIPTION

• Miniature Package
• Recovery Time: to SOOns
• Surge Ratings: to 2SA
• PIV: from 100 to 600V
• Controlled Avalanche Characteristics
• Only Fused-in-Glass Diodes Used

These miniature transfer-molded highvoltage three-phase power bridges are
designed for universal application in power
supplies. One basic bridge fills current
requirements up to 2.SA, with PIV's from
100 to 600 volts and recovery times of
standard and SOOns.

•

ABSOLUTE MAXIMUM RATINGS
100 to 600V
See Electrical Specifications
See Electrical Specifications
.. .......... -6S'C to +lS0'C

Peak Inverse Voltage
Maximum Average D.C. Output Current .
Non-Repetitive Sinusoidal Surge (8.3ms) .
Operating and Storage Temperature Range.
Thermal Resistance Junction-to-Ambient

............................ 2S'C/W

MECHANICAL SPECIFICATIONS
A../

B~

1

J

_ji__ Tinned

I
~1C

I~e

[~~

H

1

de Ae{}
G-i

700, 701 SERIES

f--

F

Copper

ins.
A
B

.310
.621
.512
.460
.255
1.030
.220
875
.028

C
D
E
F

G
H

J

REF.
MAX.
MAX.
MAX.
DIA.

mm.
7.87
15.77
13.0 REF.
11.68 MAX.
648
26.16 MAX.
5.59 MAX .
22.23
0.71 DIA.

Typical Weight - 0.12 ounces
3,5 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

8-27

~UNITRDDE

700,701

SERIES

Maximum Ratings

Electrical Specifications (at 25°C unless noted)

Maximum
PIV
Per
Leg

Type

leakage

Maximum
Forward
Voltage Drop
Per Leg

TA - 100'C

Maximum
Reverse
Recovery
Timet

I,A

I,A

ns

1.0V@0.5A

2

100

l.lV@O.SA

2

100

Current
Per Leg@ PIV
TA - 2S'C

Volts

100
200
300
400
SOO
600
100
200
300
400
500
600

700-1
700-2
700-3
700-4
700-S
700-6
701-1
701-2
701-3
701-4
701-S
701-6

Standard
Recovery

Fast
Recovery

Average
D.C. Output
CUrrent

Non-Repetitive
Sinusoidal
Surge
(8.3ms)

TA - SS'C

Amps

Amps

sao

2.S

25

2.2S

20

tMeasured in a reverse recovery circuit switching from lOrnA forward to lOrnA reverse current recovering to SmA.

Typical Forward Voltage Per Leg
YS. Forward Current

Typical Forward Voltage Per Leg
ys. Forward Current
10

Typical Leakage Current Ys. PIV

10

700 SE!lIES

701 SERIES

c;:;..

:3:

VV':

I-

z

'"::>'""'
u
0

'"«~

:3:
"'

a'"'"

.1

I

.05

II

II

.002
.001
.2

.05

/

J

.6

/

V
j

001
8

1

12

14

"'0::

'"::>
u
"'«
"«
"'

-

II / /

.002

FORWARD VOLTAGE (V)

.05
.1

I
I

./'

.5

+2S'C

L

I

Cl

.01

I

I
~oC

SERIE~

I-

-

" 8~,,*
....,:;:
-.;... I

.005

II

.4

.1

~

..:;
Z

V I'I
~l!1u ,u ,u

.2

'~" .02

I
I

/

.005

.5

~

«

"1-"1- I

III

'"

~ .02
.01

$°jl]7l~U
~ iJ lif-

:;(

V/

Z

L

.2

Vl/ IV/

I-

/

.5

ALL

.01
.02

.2

!

II

II

/

..J

,../

10
20

+7S'C

i

50
100

I

,/

200

~+125°C
"

500
1.000

J

.4
.6
.8
1
1.2
FORWARD VOLTAGE (V)

100

150

1.4

50
% OF PIV

Reverse Recovery Circuit
Current Derating Curve

IKIl

100 r - - +

9901l

z

20V D.C.

D.U.T

0::

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-

-

"
o

8-28

CONVECTION
COOLED

""

50

'if.

lOll

I
I

"

Cl

>=
«

""'.

o

100
150
50
AMBIENT TEMPERATURE ('C)

200

PRINTED IN U.S.A.

800,801 SERIES

RECTIFIER ASSEMBLIES
Three Phase Bridges, 20-40 Amp,
High Efficiency, ESP
FEATURES
• Current Ratings: to 40A
• Recovery Time: SOns
• Surge Ratings: to 250A
• PIVs: from 50 to 150V
• Only Fused-in-Glass Diodes Used
• Exceptionally High Efficiency
• Aluminum Heat Sink Case, Electrically Insulated

DESCRIPTION
This series of three phase bridges
offers the highest efficiency possible
for applications where nothing else
will do. The series allows operation at full
power at high frequencies.

•

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltages
..... 50 to 150V
Maximum Average D.C. Output Current.
.. See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms)
...... See Electrical Specifications
Operating and Storage Temperature Range
... -65'C to +150'C
Thermal Resistance Junction to Ambient, All Series.
. ... 20'C/W
Junction to Case, 800 Series
l.5"C/W
Junction to Case, 801 Series.
... 3.0'C/W

MECHANICAL SPECIFICATIONS
800, 801 SERIES

A'
B
C
D
E

F
G
H

J

ins.
.740-.760
2.240-2.260
.365 .385
.164-.174 DIA.
.370 .390
.486-.506
.115 .135
1.870-1.880
.820 MAX.

ME

mm .

18.80-19.30
56.90-57.40
9.27-9.78
4.17-4.42 DIA.
9.40-9.91
12.34-12.85
2.92 3.43
47.50-47.75
20.83 MAX .

Typical Weight -1.0 ounce
30 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

8-29

~UNITRDDE

800,801 SERIES
Maximum Ratings

Electrical Specifications (at 25'C unless noted)
Maximum
PIV
Per
Leg
Volts

Type

ESP

800-1
800-2
800-3
800-4
801-1
801-2
801-3
801-4

Recovery

ESP
Recovery

Maximum
Forward
Voltage Drop
Per Leg

50
100
125
150
50
100
125
150

Maximum

Reverse

Average

Maximum
Reverse

Leakage Current
Per Leg@ PIV

D.C. Output
Current
Tc _ 55'C
Tc - 100'C
Amps
Amps

Recovery
Time*

Non-Repetitive
Sinusoidal
Surge (8.3ms)
TA _l00'C

TA - 25'C
p,A

TA _l00'C
p.A

.95V@10A

20

1000

50

40

25

250

.95V@6A

10

300

50

20

16

125

ns

Amps

*Measured in a reverse recovery circuit switching from lA forward to 1A reverse current recovering to a.SA.

Forward Surge Current vs. Duration

I
I
I,

;;

~ 320

~ 280

~
~

240

200

::;J

""'"

...

80

o

40

::;J

... 140

z

,

I

.02

.05

~

120

!!5

100

i,

-..........
1,801 SERIES

~

~ 80

-.....

[

r-..

60

~ 40

-r.01

I /I
I II

;;
~ 160

00 SERIES

I

IZ

u 160
~ 120
a.

Forward Surge Current VS. Duration

o

20

o
.1

.2

.5

10

20

.01

.02

.05

DURATION (SEC.)

.1

.2

.5

10

20

DURATION (SEC.)

Current Derating Curve
'0 40

~

35

UJ
ll:
ll:

25

::;J

20

...
z

U

,"

30

...

15

...a.

10

::;J

r--.... ~ t 801 SERIES

h

800 SERIES
I

- r- ""r- "

,

0

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

a

55
100
CASE TEMPERATURE ('C)

8·30

I

i'-...

i ....... I--J

::;J

o

!

I

,

N
150

PRINTED IN U.S.A.

800,801 SERIES

Typical Forward Voltage Per Leg
vs. Forward Current

Typical Forward Voltage Per Leg
VS. Forward Current
100

100

/.~;:::

800 SERIES

50

50

/~~

20

~

"CJ CJ
1--- 'W.../i!"
/5

OJ
U

"f..

~ .05

"~

I

.2

a

II

.S

/

U

a

C,J

.5

0:

"

"

;; .2
0:

a

801 SERIES

.01
1.5

.1

1-1-

r-I-!-

~

T - +75"C

10

w

""
""

"~

-

100

T = +125"C

200

100

75

50

Ii?

I

I

.1 .2 .3 .4 .5 .6 .7 .8.9
1.1
FORWARD VOLTAGE (V)

1.3

Typical Leakage Current

PIV

VS.

•

8 0 SERI S

A=-5J

I

L

/'

Tl~

10
20

W
..J

./"

.251_

T - -7S'e..--

r-

T =-12'::;"-

V

100
200

1K
125

-f.

.......

OJ
U

..... i--'

~ 20
...I

J

....
z

OJ

w

/ -f.

j
I

il

.2

W
0:
0:

W
0:
0:

U

/?/i! ~"A$-fr

j

.1

T _ +25'C

k-

z

-1' -.! ~50lc
I

.2

....

.01
.02

'Ill'

V...

re-

.02

Typical Leakage Current vs. PIV
.01
.02

H- ~'/"CJ CJ

"- .1
.05

.5
.7
.9
1.1
1.3
FORWARO VOLTAGE (V)

.3

If /

OJ
U

I

.01
.1

I

II

I

III III
/ /

W
0:
0:

>/7

-f. '"

II

"- .1

~

CJ
;;,

10

....z

VI II /

W
0:
0:

/.;:::: ~;:;'/ / /

20

10

~
....z

801 SERIES

25

1K

% OF PIV

125

Reverse·Recovery Circuit

75
50
% OF PIV

100

25

Characteristic Waveform
t ..

~

i'-

\
1n
NOTE3

luc

\

i

i

I

I,

II
SET TIME BASE
FOR 5 NS/CM

NOTES:

1. Oscilloscope: Rise time (; 3ns; input impedance = SOU.
2. Pulse Generator: Rise time ~ 8nsi source impedance IOn.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE CORPORATION. 5 FORBES ROAO
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

8·31

PRINTED IN U.S A.

802,803 SERIES

RECTIFIER ASSEMBLIES
Single Phase Bridges, 20-35 Amp,
High Efficiency ESP Series
FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This series of single phase bridges
offer the 'highest efficiency possible
for applications where nothing else
will do. The series allow operation at
full power at very high frequency.

Current Ratings: to 35A
Recovery Time: 50ns
Surge Ratings: to 250A
PIVs: from 50 to 150V
Only Fused-in-Glass Diodes Used
Exceptional High Efficiency
Aluminum Heat Sink Case, Electrically Insulated

ABSOLUTE MAXIMUM RATINGS

Peak Inverse Voltage .
....... 50 to 150V
Maximum Average D.C. Output Current
. See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms)
........ See Electrical Specifications
Operating and Storage Temperature Range ....
.... -65'C to +150'C
Thermal Resistance Junction to Ambient, 802 Series.
. ............ 20'C/W
803 Series.
....................... 25'C/W
Junction to Case, 802 Series .
.......... 2.0'C/W
803 Series
.... .... ........
4.0'C/W

MECHANICAL SPECIFICATIONS
803 SERIES

~E

Dl---.
;;-cili

A
B

C
0
E

ins.
.735-.755
.570 MAX.
.226-.246
.735-.755
.13O-.150DIA.

MA

mm.
18.67-19.18
14.48 MAX .
5.74-6.25
18.67-19.18
3.30-3.81

~
c

Typical Weight -

0.35 ounces
10 grams

802 SERIES

AniB

tr
K

A

+

B

+-~~r~krHr~

LI;

.

J~r-~'
L

I

Io--G

C
0
E
F
G
H

J
K

ins.
.056-.066
.052-.072
1.115-1.135
.552-.572
.552-.572
.180-.200 DlA.
.490-.510
.750 MAX.
.302-.322
1.115-1.135

MB

mm.
1.42-1.68
1.32-1.83
28.32-28.83
14.02-14.53
14.02-14.53
4.57 5.08 DIA .
12.45-12.95
19.05 MAX.
7.67 8.18
28.32-28.83

Typical Weight - 0.70 ounces
20 grams

8-32

~UNITRODE

802,803 SERIES

Electrical Specifications (at 25'C unless noted)
Maximum
Forward
Voltage Drop
Per Leg

PIV
Per
Leg
Volts

Type

802-1
802-2
802-3
802-4
803-1
803-2
803-3
803-4

ESP
Recovery

ESP
Recovery

50
100
125
150
50
100
125
150

Maximum
Reverse
leakage Current
Per Leg @ PIV

Maximum Ratings
Maximum
Average

Non-Repetitive
Sinusoidal

D.C. Output

Surge (8.3ms)

Maximum
Reverse
Recovery
Time'"

Tc - 55"C

Tc _IOO'C

ns

Amps

Amps

TA - lOO'C
Amps

Current

TA - 25"C
pA

TA - 100'C
pA

.95V@10A

20

1000

50

35

22.5

250

.95V@6A

10

300

50

20

16

125

"'Measured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to O.5A.

Typical Forward Voltage Per Leg
VS. Forward Current

Typical Forward Voltage Per Leg
VS. Forward Current
100

V:: ~~

802 SERIES

50

3

I

u.

.1

o

fI"""

r---- .:;>.
. . g (,)
'I- ;:

I/
/

.5

1/
.1

I

IZ
UJ
0:
0:

u

.~

If

.2

~

~

u.

/'"

/'1-

/

.05
.02
.01

I

II

VS.

0

/

il

Typical Leakage Current
.01
.02

V-

PIV

, / /11tolc

.2

I I
r-

T _ +25"C

1>-

,,/'

VS.

1.3

803 SERIES

.1

T 1=+251_ _

f

.3
.5
.7
.9
l.l
FORWARD VOLTAGE (V)

1.5

PIV

t(J

'I-

II II
.1

A=-5Jc

1

-f.--J""
r--r--- bl~

.1

802 SERIES

.2

-li" 8jtd:u
."

r--r---

1/

~_

i/r-

z

-

UJ

0:

0:

:0

:0

U
UJ

co 10

"'"'"

.5

c
~

.5
.7
.9
l.l
1.3
FORWARD VOLTAGE (V)

.1

1

:0

h"--i!?

Typical Leakage Current
.01
.02

a:

II

I
I

.3

IZ
UJ
0:

I

II

I
.01

'/1/'/

I I /1/
VI
II II I

~

VIII I

~ .05
.2

II

V

Z
UJ
0:
0:

~
0:

V;t:::::: ~v

20
10

10
5

803 SERIES

50

/~fJ

20

:?
I-

100

20

T_+75'~

UJ

...J

100
200
T

=

+12::;"-

~

-

100

75
50
% OF PIV

UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

i--"

i5"
..J

100

T _ +125"C

200

.----

IK

25

8-33

i--"

II
125

IK
125

T-~

10

~ 20

100

50
75
% OF PIV

25

PRINTED IN U.S.A.

802,803 SERIES

Current Derating Curve
0' 40
"C

~ 35

i',

tz 30

I

:> 15
0t::: 10 I-- -

h"-

I

t-

0

f-/

a02 SERIES

UJ

a: 25
a:
:>
u 20

'" I'

a03 SERIES

1---~.

i'-r..... r-... r--..,

r--.

I I
I I
55

150

100

CASE TEMPERATURE eC)

Forward Surge Current vs. Duration

forward Surge Current vs. Duration

u

u

t- 140
Z
~ 120

;:: 2ao

~ 160

~ 100
U ao

~ 320

~ 240
~ 200 ............

-..........

:>

60

/

~ 40

o

U

r--

t-

i[

I La03 SERIES

20

I II

o
.01

.02

.05

_1

.2

.5

160

r-........

~ 120

-

0-

t-

ao

o

40

:>

I
La02 SERIES

I IIIII

o
10

20

.01

.02

.05

.1

.2

-

l-

.5

10

20

DURATION (SEC.)

DURATION (SEC.)

Characteristic Waveform

Reverse·Recovery Circuit

-

t"

0---

\

I REC

\

~

1

r

h

l.I
SET TIME BASE
FOR 5 NS/CM

NOTES:
1. Oscilloscope: Rise time ~ 3nsi input impedance = 50!?
2. Pulse Generator: Rise time::::;; 8ns; source impedance Ion.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) a61·6540
TWX (710) 326·6509 • TELEX 95-1064

8·34

PRINTED IN U.S.A

804 SERIES

RECTIFIER ASSEMBLIES
Doublers and Center Tap, 20 Amp,
High Efficiency, ESP
FEATURES
• Current Rating: to 20A
• Aluminum Heat Sink Case, Electrically Insulated
• Recovery Time: SOns
• Surge Rating: to 2S0A
• PIVs: from SO to lS0V
• Only Fused-in-Glass Diodes Used
• Exceptional High Efficiency

DESCRIPTION
This series of doublers and center tap
rectifiers offer the ultimate in high
efficiency application. The rectifiers are
particularly suited to switching regulator
supplies where very fast recovery time
and low forward drop are of prime
importance.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
Maximum Average D.C. Output Current
@ Tc
+SS·C
@ Tc
+100·C .
Non-Repetitive Sinusoidal Surge (8.3ms)
@ TA
+100·C .
Operating and Storage Temperature Range .
Thermal Resistance Junction to Ambient .
Junction to Case .

II

....................... 50 to lS0V

=
=
=

....................... 20A
........ 14A
........................ 250A
. . -65·C to +15O"C

..... 20·C/W
. ......... 6.0·C/W

MECHANICAL SPECIFICATIONS
804 SERIES

MF

AC

r

I ~:~~;DIA.

i";!;"1r~==;:;===:;:;=;rl:v

"P"

.

~

"N"

.

~

AC

-'-

AC

5/80

AC

~I

AC

Typical Weight -0.35 ounces
10 grams

Dimensions in inches.

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

+

"D" ....._ _
~f--l...--~~I-----

(2 PLACES)

t Add

suffix P, N, or 0 for terminal

configuration P, N, or D.
For example, for center tap
configuration, P, order B04-IP

8-35

~UNITRDDE

804 SERIES

Electrical Specifications (at 25'C unless noted)

PIV
Per
Leg

Type

Maximum
Leakage
Current (pA)
Per Leg @ PIV

Maximum
Forward
Voltage Drop
Per Leg

TA

= 25'C

Volts

804-1
804-2
804-3
804-4

ESP
Recovery

50
100
125
150

.95V@lOA

TA

Maximum
Reverse
Recovery

= 100'C

Time*

pA

pA

ns

10

500

50

*Measured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to a.SA.

Typical Forward Voltage Per Leg
VS. Forward Current
100
50

V~~

20

II

5
2

0::

1

~

.2

f2

.1

!Z

"'0::0::

-(.: :;: '"

II

.5

II

/

.01
.1

.3

"'
"''""
"~

I

I

UNITRODE CORPORATION, 5 FORBES ROAD
LEXINGTON, MA 02173' TEL. (617) 861-6540
TWX (710) 326-6509" TELEX 95-1064

A=-sot
r

1

./

TL+21_

10
20

T=+7S':-- 7

100
200
T=+12

I
.5
.7
.9
1.1 1.3
FORWARD VOLTAGE (V)

PIV

u

0

I

I

./'

.2

YS.

:>

." {5,O

~ .05
0::

~

11/ / I
v..l,o
II
r-/ !l1f

!-

Z

~

.1

I

10

~

Typical Leakage Current
.01
.02

v~ ~P'"

lK
125

1.5

8-36

100

::s.-.............

75
50
% OF PIV

25

PRINTED IN U.S.A

804 SERIES

Forward Surge Current vs. Duration

II

;;-

!

160
.... 140

z

~ 120

g; 100
u

t-

80

o

I

;;-

I

11-1-II _ I

rs: "r::.

~ 60 I---

5

I

Current Derating Curve

40
20
_01

Ii

.i

I
.05

804 SERIES

I
_1

.2

-

I

I

W
0: 25
0:
:::>
u 20

I

I r- ......

t:::> IS

r-

/
L

[

.02

L

--..

I

~ 35
ti
Z 30

~-l

-t-

--

40

"0

II I

r4:#
I I

.5

...."-

:::>
0

I

804 SERIES

10

o

20

r-r-.,

I I
I I

o
10

!

55

i'100

150

CASE TEMPERATURE ('C)

DURATION (SEC.)

•

Reverse-Recovery Circuit

1n
NOTE3

NOTES:

1. Oscilloscope: Rise time ~ 3nsj input impedance = son.
2. Pulse Generator: Rise time ~ 8ns; source impedance Ion.
3. Current viewing resistor, non-inductive, coaxial recommended.

Characteristic Waveform
~

t"

I'-

\

I REe

\

~

1

r

I,

LI
SET TIME BASE
FOR 5 NS/CM

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

8-37

PRINTED IN U.S.A.

SES5401 C-SES5404C

RECTIFIERS
High Efficiency, 16A Center-Tap
FEATURES
• Low Forward Voltage
• Fast Recovery Times
• Economical, Convenient TO-220AB Package
• Low Thermal Resistance
• Mechanically Rugged

DESCRIPTION
The SES5401C Series in the economical,
convenient TO-220AB package, is
specifically designed for operation in power
switching circuits to frequencies in excess
of 100KHz. The series combines two high
efficiency devices into one package,
simplifYing installation, reducing heatsink
requirements and the need to purchase
matched components.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, SES5401C _. _. ___ . _. _. _. ___ ... ____ . _. _.. _. _.. _. _. __ . _. _...... _. _. _.. _.. _. _. _. _. _.. _.. _.. _.. __ . _. _. _. _50V
Peak Inverse Voltage, SES5402C ___ . _... __ . _.. _. _. _. _. _. _... _. _.... _. __ . _. ___ .... _. _. _.... _. __ . _. _. _. _.. _.. _.. _.. _.. _. _. _.100V
Peak Inverse Voltage, SES5403C . _. _______ . _.. _. _. _. _. _. _. _. _.. ___ . _. __ . __ ....... _. _. _. _.. _. __ . _. _. _. _.. _.. _.. _.. __ . _. _... 150V
Peak Inverse Voltage, SES5404C .. _. _. _. _. _. ____ .... ______ . _.... _. _. __ . _.. _. _. _. _... ___ . _. _... _. _. _.... _.. _.......... __ .. _200V
Maximum Average D.C. Output Current
@ Tc = 125°C __ . _. _____ . _.. _. _. _. _. _. _. _. ___ . _. _______ .... _. ____ .. __ .... _. _. _. _....... _. _. _. _. _.. __ . _.. __ . ___ . _. ___ 16A
@ TA = 25°C . ___ . _. __ . __ . _. _. ___ . _. _. ____ . _. ___ . _. _. _.... _. __ . _. __ . _... _. _. _. _. _... _... _. _. _. __ . _..... _.. __ . _. _. _. _. 3A
@ TA = 25°C (Note 1) _... _. _. ___ . _____ . __ ... _____ . _. _.... _. _. __ . _.. _... _. _. _. ___ . _. _. _. _. _. _. _. __ . __ .... __ .. _. ___ . _. lOA
Non-Repetitive Sinusoidal Surge Current, 8.3mS ... _____ . __ . _.... _. _.. _. __ . _. _. _. _. _.. __ . _. _. _. _. _. __ . _. _. ___ . __ . _.... ___ . _.70A
Thermal Resistance, Junction to Case, OJ-c. _. _.. _. _. _. _.. _. _.. _. _. __ . _.. _. ___ .. ________ . _. _. _. _. _.. ___ . _... _..... _.. _ 1.75°C/W
Thermal Resistance, Junction to Ambient, OJ-A _. _. ___________ .. _.... ____ .. _.. ____ . _. _. _. __ . _.... _. _. _. _.. _.. _.. __ .. _. __ 60°C/W
Operating and Storage Temperature Range .......... ___ ...... _...... _.. _............ __ ................ _.. __ ... -55°C to + l50°C
Note 1_ Using Wakefield Type 295 heatsink with convection cooling. For more definitive data refer to the Output Current vs.
Temperature Curves on this data sheet.

ELECTRICAL SPECIFICATIONS

Type

Maximum
Forward Voltage (VF)
@

PIV

TJ=2S oC
SES5401C
SES5402C
SES5403C

50V
l00V
l50V

Maximum
Reverse Current (I R)
@PIV

TJ=100 oC

@ TJ=2S oC

@ TJ =100 oC

5"A

l50"A

O.945V @ SA

1_025V @ SA

Maximum
Reyerse
Recovery
Tim.·

Typical
Forward
Recovery
Voltage
@IA
t,.=8nS

lOOnS

1.4V

°Measured In circuit IF =O.5A, IR = 1.0A, IREO =O.25A

MECHANICAL SPECIFICATIONS
SES5401-SES5404C

SEATING
PLANE

D' ..

.

•
B

c

j

r-I
U
I

....j

.:n-

~

SECT A·'

~

•

~

Plnl

!

iii.
Pin3

,
0

G
H

14.23

0.51

3.531

1.1"
3.73]

2."

2."

0."
14.27
1.77

&

K

12.70

Tab

L

1.1"

•

INCHII

0....
0....
0.140
0....
0.131

...,

2."
2.04

....
1.1"

5.33

....
'.04

U.

1.1,

8-38

0....
0....
0,110

0.045
0.147
0.110

6.l5

0.31

Q

.

15.'7

10.66

J

5
T

1110

..,. .. .., .
....'.5O ...
.....

MILLIMIT'_.

Pin2

N

.. . ..

TO-220AB

0.015
0....
0.045
0.110
0.100
0....
D.IMS

.....

0....
0.025
0.'"
0.010
0.110

0.120

0.115
0....
0.210

~UNITRDDE

SES5401C·SES5404C

Output Current
vs. Temperature

Typical Forward Current
vs. Forward Voltage

Typical Reverse Current
vs. Voltage
.01
.02

100

18

50
16

~

14

zOJ

12

:>

10

...

20

.1
.2

~V

10

/

II:
II:

I

II:
IX

-~

:>


'"0

40

#

20

......

"-

IX

!"--.

50

10

.5

-.......

"'i'... .....................

---

LL

50
lOpS

20

Multiple Surge Current vs. Duration
100

:>
Q.

40

V,-VOLTAGE(V)

Peak Half Sine CUrrent vs.
Duration for Non-Repetitive Pulse

..............

= +12S C

L'

VOLTAGE IN % OF PIV

Forward Pulse Current vs. Duration
10.000

V

~JI ~Ior I

(

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.11.21.3
TEMPERATURE (OC)·

l-

J ..

I-ti;s·c

f-

'"

iJ i~I

:;:
[II'"
,II

J II

.05
.02

z

~I

zOJ

,e1~1~
j
I

G

A

.875 MAX

B

.135 MAX.

3.43 MAX .

c

.250-.450

6.35-11.43

D

.312 MIN.

E

.038-.043 OIA.

j

J

~

I+---K

22.23 MAX.

7.92 MIN •

0.97-1.090IA.
4.78 MAX. RAD .

F

.188 MAX. RAD.

G

1.177-1.197

2900-30.40

H

.655-.675

16.64-17.15

J

.205-.225

5.21-5.72

K

,420-.440

10.67-11.18

L

.525 MAX. RAD. 13.34 MAX. RAD •

M

.151-.1610IA

H

L

204AA (TO-3)

mm

3.84-4.09 OIA.

NOTES:
1. Standard pOlarity Is poSItive output.
For reverse polarity (negative output) add suffix "A", ie, SES5601CR.
2. All metal surfaces tin plated.

1/10

8-40

~UNITRDDE

SES5601C-SES5603C
Typical Forward Current
VI. Forward Voltaga

Typical Reverse Current
vs. Reverse Voltage
.001
.002

I I

so

./

J-t-

.005
.01
oS .02

TJ _+25'C

;;

20

~
....
z 10

....Z

.05
a: .1
a:
:l .2
u
.5
III

'"0:0:

'"

'"a:
>
'"
'"a:

~

:l

----

t- -r f::i-f-- +100'C

I

. c--

=+125'C'
/F= F=T:' =+ISO'C
~ r-TJ

I

10
20

so

TJ

30

I

-'--""

}

u

I

;:

(

0
0:
<[

V

II I
L :l

0:

...
0

bf

-"

.5

V

.2

V, -

130 120 110 100 90 80 70 60 so 40 30 20 10 0
V, - REVERSE VOLTAGE (% OF PIV)

Maximum Forward Surge
VS. Number of Cycles
400

~

....

300

Z

'"a:a:

""

-~
100

J\.J'L

V

.6
1.0
.8
FORWARD VOLTAGE (V)

....... .....-

.5

u

~

I

z

VV

<[

o

'" ""

~ICYC~E

.2

W
Q.

:>
<[

~

.05

'...."

"'" -

J:

",,----

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

1.2

•

..-1-

V

/

.1

-'

/
/

.02

I

g .01

.01.02 .05.1 .2

Of<

tp -

N-

/

~ -TJ =+75'C

Thermal Impedance
vs. Pulse Width
w

a200

/

1\ "'/
V I'

I

.4

I

.1

L

V

=+150'C ~ V

.5 1 2 5 10 20 50100200
PULSE WIDTH (mS)

1000

200

Reverse-Recovery Circuit

Output Current vs.
Case Temperature

Ion

50 n

30

~
....z

'"a:0:

:l

r20

u

....
....Q.
:l
:l

0

I
_0

10

+
_
-=-

"" '" ~
'"

100
Tc -

25Vdc
(APPROX.I

III
NOTE 3

OSCI LLOSCOPE
NOTE I

NOTES:
1. Oscilloscope: Rise time ~ 3nSi input impedance = son.
2. Pulse Generator: Rise time ~ 8nS; source impedance 100.

3. Current viewing resistor, non-inductive, coaxial recommended.

125
150
175
CASE TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

8-41

PRINTED IN U.S.A

RECTIFIER ASSEMBLIES

JAN
JAN
JAN
JAN

Single Phase Bridges, 25 Amp,
Military Approved

SPA25
SPB25
SPC25
SPD25

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This series of military high-current
single-phase bridges offer the utmost in
reliability as required in military system
designs. This series is assembled with
diodes which have been subjected to
100% screening tests.

Qualified to MIL-S-19500/446
Current Rating: to 25A
PIV: from 100 to 600V
Surge Ratings: to 150A
Only Fused-in-Glass Diodes Used
Controlled Avalanche Characteristics
Aluminum Heat Sink Case, Electrically Insulated

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
Maximum Average D.C. Output Current
@ Tc == 55°C
@ Tc == 100°C
Non-Repetitive Sinusoidal Surge (8.3ms)
@ Tc == 55°C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient
Junction to Case

. 100 to 600V
..... 25A
...... 15A
.......... 150A
...... -65°C to +150°C
................... 20°C/W
.... ..... 2,SOC/W

Ltr

C,
C,
C,
C.
~~DI

¢D2
¢Ol
~D •
('105

H,
H2
H,
H.
L,
l2
L,
L.
Ls
W

Dimensions
INCHES
MILLIMETERS
MIN.
MIN .
MAX.
MAX.

.552
.624
.312
.495
.lB9
.057
.10B
.141
.225
.669
.300
.040
.042
.370
.307
.OB9
.132
.026
1.104

.572
.760
.3BO
.512
.195
.067
.11B
.151
.235
1.060
.500
.060
.062
.560
.365
.099
.142
.036
1.144

14.02
15.B5
7.92
12.57
4.BO
1.45
2.74
3.58
5.72
17.53
7.62
1.02
1.07
9.40
7.80
2.26
3.35
.66
2B.04

14.53
19.30
9.65
13.00
4.95
1.70
3.00
3.B4
5.97
26.92
12.70
1.52
1.57
14.22
9.27
2.49
3.61
.91
29.06

MECHANICAL SPECIFICATIONS
SPA25 SPB25 SPC25 SPD25

MC

NOTES:
1. Terminals shall be hot tin dipped or silver plated.
2. Polarity shall be marked on terminal side of device.
3, Point at which Tc is read (must be in metal part of case).
4. Locating pin shall be adjacent to positive terminal.
5. Insulating sleeve shall be alumina (AL 2 0]) or equivalent.

8-42

~UNITRODE

JAN SPA25 JAN SPB25 JAN SPC25

JAN SPD25

Electrical Specifications (at 25°C unless noted)
Maximum
Reverse
Recovery

Peak

Forward
Voltage
Drop*

PIV
Per
Leg

Type

Volts

JAN
JAN
JAN
JAN

Minimum

100
200
400
600

SPA25
SPB25
SPC25
SPD25

1

Maximum Leakage
Current
Per Le : @ PIV

Timet

Maximum

0.9V

Tc

pS

1.4V

2

=25°C

Tc

=lQO°C

pA

pA

2

150

@39A(pk)

*Peak forward voltage drop is measured at a pulse width of 8.3ms.
tMeasured in a reverse recovery circuit switching from O.SA forward to t.OA reverse current recovery to a.SA.

Typical Forward Voltage Per Leg
VS. Forward Current
50

// ~

20

~ /~

10

...

zw

'"'"

::J
U
0

"f-.

.5

II

.1

.1
.2

w

.5

'"'"

./
_ _ +25°C

"'"

_

''""

10
20

w

..J

I

.2

.6

.4

'\

o

o

1

-

50
100
200
500
IK

I II I

1\

50

'\

1./
+75°C

w

125

I

.05

'\.

1

U

/I

"z
~
'"
;f.

I\,

::J

//

.2

...

'\.

50°C

.05

z

Current Derating Curve
100

I .......

.01
.02

~

/ VI Ij
II I.
/ / /I
,,8:vi?
Ihk:;:'/:t
fA"Vt

~

'"'"
;;
'"u.0

Typical Leakage Current vs. PIV

100

75

50

50
100
150
CASE TEMPERATURE (OC)

175

./
+125°C

25

% OF PIV

.8

1.2

1.4

FORWARD VOLTAGE (V)

100 Percent process conditioning

100 Percent

of discrete diodes

burn~in

of discrete

diodes

1. High-temperature storage

1. Measurement of specified
parameters

2. Thermal shock (temperature
cycling)

2. Reverse bias burn-in

3. Reverse-recovery time

3. Measurement of specified
parameters to determine
delta

4. Lot rejection criteria

Reverse·Recovery Circuit
SOil

10

based on rejects from
burn-in test

!~

+
_

-=-

I!!

Inspection tests
to verify L TPD
Group A
Group B
Group C

Review of groups
A, 8, and C data
for lot accept or
reject

25Vdc
(APPROX.)
NOTE3

Assembly and
encapsulation of
discrete diodes
into bridge
assembly

OSCILLOSCOPE
NOTE I

NOTES:

=

1. Oscilloscope: Rise time ~ 3nsi input impedance
SOP..
2. Pulse Generator: Rise time ~ 8nsi source impedance lOP..
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

8-43

PRINTED IN U.S A.

•

U ES2401-U ES2404

RECTIFIERS
High Efficiency, 16A Center-Tap

FEATURES

DESCRIPTION

•
•
•
•
•

The UES2401 Series in the economical,
convenient TO-220AB package, is
specifically designed for operation in power
switching circuits to frequencies in excess
of 100KHz. The series combines two high
efficiency devices into one package,
simplifying installation, reducing heatsink
requirements and the need to purchase
matched components.

Very Low Forward Voltage
Very Fast Recovery Times
Economical, Convenient TO-220AB Package
Low Thermal Resistance
Mechanically Rugged

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES2401 .................................................. 50V
Peak Inverse Voltage, UES2402 ................................................. 100V
Peak Inverse Voltage, UES2403 ................................................. 150V
Peak Inverse Voltage, UES2404 ................................................. 200V
Maximum Average D.C. Output Current
@ Tc = 125°C (Note 1) .................................................... 1GA
@ TA =25°C .............................................................. 3A
@ TA =25°C (Note 2) ..................................................... 10A
Non-Repetitive Sinusoidal Surge Current, 8.3mS .................................. 80A
Thermal Resistance, Junction to Case, BJ- c ................................. 1.75°C/W
Thermal Resistance, Junction to Ambient, BJ-A ............................... GO°C/W
Operating and Storage Temperature Range .......................... -55°C to + 150°C

Note 1. Above 8A use the tab for electrical connection.
Note 2. Using Wakefield Type 295 heatsink with convection cooling. For more
definitive data refer to the Output Current vs. Temperature Curves on this
datasheet.

MECHANICAL SPECIFICATIONS
UES2401·2404

SEATING
PLANE

MILLIMETERS

.,M

•
•

•

~

Pin 1

!
Pin2
&
Tab

14.
PI,n 3

MI.

....

14.23

C

3,"'

0

0.51

•
G

H

J

MA'
15.•7
10.66

"'.

1.14

....

3.7ll

3.531

2.79
6.35

•
L

0,"
12.10
1.14

0."
14.27
1.77

N

"'3

5,33

'.54

l,"

Q

••
T

.... ....1."
1.14

5.&5

6-79
(Revised)

8-44

1.15

TO·220AB

....

INCMIS
.A,
MI.

"',.
0,310
0.140
...10
Q,tH

.....-

0.015

"",.

.0.045
0.110
0.100

0.045
0.210

MID
0.11G
0.045
0.147
0.110
0.110
0.02'
0....
0.070
UlO
a.11G

0.U5
O.OSS

'.170

O:::JJ UNITRODE

UES2401

UES2404

ELECTRICAL SPECIFICATIONS
Maximum
Forward Voltage
Type

PIV

UES2401
UES2402
UES2403
UES2404

50V
looV
150V
200V

"Measured in circuit IF

Maximum
Reverse Current
@PIV

TJ = 25°C

TJ = lOO°C

TJ = 25°C

TJ = lOO°C

O.9V@4A
O.975V@ 8A
tp =3OO/lS

O.8V@ 4A
O.895V@8A

5/lA

150/lA

Maximum
Reverse
Recovery Time·

Typical Forward
Recovery Voltage
@ lA T, =8nS

35nS

1.4V

=O.5A, IR =l.OA, IREC =O.25A
Typical Forward Current
vs. Forward Voltage

Output Current
vs. Temperature

Typical Reverse Current
VS. Voltage
.01

100

18
16

5:

14

...

12

....z

'"'"

20

...5:z
'"'"
:J
u

I
-~

.2

IA I I

.5
.2

I
-~

.1

f-

-'rJ

It

,-'

0:
0:

V

::>

'I

'/-

iii +-I--H-+-1

I
II

]0

++++-H
'-+-+-+-+-+--1

~J ~ -r5~C 1...--~J ~ ~10~·~.

100

200

I

III

1000

.01
.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.11.21.3

pI--

f--

_'" 20

.05 H--IIH'YH-I ....
.02

=2~·C.

'"

II

,-'

I-TJ

Z

=:~~l~;;I:
-

l-

I-- 1-1--

~

I-

w

U

TJ =-SOOC

.1

10

10

:J

1./1'

.02

50

rt

120

T

= .J.12S·C

ill I I
100

80

60

40

20

VOLTAGE IN % OF PIV

V,-VOLTAGE(V)

Multiple Surge Current vs, Duration

Forward Pulse Current VS. Duration
10,000
5,000
1,000

5:

I I

..........

W

!5'"

-r-..r-

100
50

u

I

I Peak Half Sine Current vs. I
~ ...... ~ Duration
for Non-Repetitive Pulse

500

....Z

100
Cl
Z

80

'~

~

'"w

60

iil'"

40

Cl

...........

" , .....'-......

u.

o

(f.

10

1 2

50

.5

20

lmS

lamS

---. -

50 100 200
10 20
CYCLES AT 60 Hz SINE WAVE

500 1000

PULSE DURATION

~

~

1.0

w

.4

'"w

~

.2

I
~

N

.04

....

./

10--'"

~

+

= (A~5p~g'ic.)
1Q
NOTE3

V'

.1

l::

....

10 II

.... 1-....

Q.

~
-'
«
::;;

50Q

2.0

w
u

z
«
c

Reverse-Recovery Circuit

Thermal Impedance
VS. Pulse Width

G-----.
OSCILLOSCOPE

NOTEI

V'

.02
.01.02 .05.1.2
tp -

.5 1 2

S 10 20 50 100 200

NOTES:
1. Oscilloscope: Rise time'" 3nS; Input impedance ~ 50n.
2. Pulse Generator: Rise time'" 8nS; source Impedance IOn.
3. Current viewing resistor, non-inductive, coaxial recommended.

1000

PULSE WIDTH (mS)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

8-45

PRINTED IN U S.A.

II

RECTIFIERS

UES2601-UES2603

High Efficiency, 30A Center-Tap

FEATURES
• Very Low Forward Voltage
• Very Fast Switching Speed
• Convenient Package
• High Surge
• Low Thermal Resistance
• Mechanically Rugged
• Both Polarities Available

DESCRIPTION
This series combines two high efficiency
devices into one package, simplifying
installation, reducing heat sink requirements and the need to purchase
matched components.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES260l
Peak Inverse Voltage, UES2602
Peak Inverse Voltage, UES2603
Maximum Average D.C. Output Current at Tc
lOO'C
Non-Repetitive Sinusoidal Surge Current 8.3 ms
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

50V
lOOV
. l50V
.30A
.400A
l'C/W

=

-55'C to +175'C

POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL SPECIFICATIONS

•

POSITIVE OUTPUT

.1

I

14

• •

NEGATIVE OUTPUT

CASE

~WE

UES2601-UES2603

14 1.1 •
CASE

F~_M

~.l'~"
I 7 ~_

A
B
ANODE 1
ANOqE 2

I

G

J~~

C D

'I<

L

c
0
E
F
G
H
J

K
L
M

Inl.
.875 MAX
.135 MAX.
250-.450
312 MIN.
.038-.0430IA.
188 MAX. RAD.
1177-1.197
.655-.675
205 .225
420-.440
.525 MAX. RAD.
.151- 161 DIA.

TO·204AA (TO·3)

mm.
22.23 MAX .
3.43 MAX .
6.35-11.43
7.92 MIN.
0.97-1.09 OIA.
4.78 MAX. RAD.
29.90-30.40
16.64-17.15
5.21-5.72
10.67 11.18
13.34 MAX. RAD .
3.84-4.09 DIA .

Note:
Standard polarity is positive output.

For reverse polarity (negative output) add suffix "R", ie. UES2601R.

8-46

~UNITRODE

UES2601- UES2603

ELECTRICAL SPECIFICATIONS
Maximum

Type

UES2601
UES2602
UES2603

Tc = 2S'C

Tc = 12S'C

Tr = 2S'C

Tc= 12S'C

Maximum
Reverse
Recovery
Time*

.930V
@
15A
t p 3ool'S

.825V
@
15A
t p 3ool'S

2OI'A

4mA

35nS

@

SOV
IOOV
lSOV

=

in Circuit IF::::; a.SA, IR = lA, 'REe

* Measured

Maximum
Reverse Current
@

Forward Voltage

PIV

=

= O.2SA

Typical Reverse Current
vs. Reverse Voltage
.001
.002

I

Forward Current
vs. Forward Voltage
50

:../

AdT -+2S'C

.005
~ .01
.02

J

I-

"'

.2

"'~
0:

,-'"

I
-«-

U
C
0:

I- ~

- ~ ~+IOO'C
I

0:

10
20
50

I

= ::::t
J

...
0

.5
= +ISO'C
I I

~I

.2

II

V

I

I

/

~ -T =+12S'C
-TJ = +7S'C
J

/

- - = TYPICAL V,
- - - - = MAXIMUM V

II

I

.4

I

"/

/1

/

~

V

~r.

\- V/ '" '"

/

V

II .!

0:

>I
_...-V

TJ = +12S'C

1

«
;:

I

/

/

0:

::>

.1
.5

/

0:

Z .05

~

10

Z

I-

~

20

5:

.s
"'~

TJ = +150'C

30

1.0
.8
FORWARD VOLTAGE (V)

.6

V, -

1.2

130 120 110100 90 80 70 60 50 40 30 20 10
V, - REVERSE VOLTAGE (% OF PIV)

Maximum Forward Surge
vs. Number of Cycles
400

I~

5: 300

1.0

E
"'

Z

0:
0:

"'

It---tl CYC~E

"

:;0
0:

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

N-

V

J:
l-

-

.02

I

~

.01
.01.02 .05.1 .2 .5 1 2 5 10 20 50100200
tp - PULSE WIDTH ImS)

'"

30
I-

Z

"'0:0:
::>

20

-

Reverse-Recovery Circuit

::>

0I-

::>
0

+
_
-=-

~

u

10

I
_0

100
Tc -

100

50 P.

~

I-

1000

200

Output Current vs.
Case Temperature

5:

/

.05

UI

'-......

V

..-f-

V

.1

..J

""

-~

.2

0:;0

""

200

I,

-" 100 .f\.JL

v/

«
c

~

I-

Z

.5

u

I~

UI

a

Thermal Impedance
vs. Pulse Width

~

25Vdc

IAPPROX.)
10

NOTE 3

~

NOTES:

OSCI LLOSCOPE
NOTEl

=

1. Oscilloscope: Rise time:::;;; 3ns; input impedance = SOO.

2. Pulse Generator: Rise time :s;;; 8ns, source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

125
175
ISO
CASE TEMPERATURE ('C)

UNITROOE CORPORATION, 5 FORBES ROAD
LEXINGTON. MA 02173 ' TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

8·47

PRINTED IN

u.s

A.

UE82604-U E82606

RECTIFIERS
High Efficiency, 30A Center-Tap

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

The UES2604 series is specifically
designed for operation in power switching
circuits operating at frequencies of at
least 20 KHz.
This series combines two high efficiency
devices into one package, simplifying
installation, reducing heat sink requirements and the need to purchase
matched components.

Very Low Forward Voltage (1.l5V)
Very Fast Recovery Times (50nSec)
Low Profile Package
High Surge Capability
Low Thermal Resistance
Mechanically Rugged
Both Polarities Available

ABSOLUTE MAXIMUM RATINGS
Peak I nverse Voltage, UES2604 ................................................................................................. 200V
Peak Inverse Voltage, UES260S ................................................................................................. 300V
Peak Inverse Voltage, UES2606 ........ ................................. ................................
........... 400V
Maximum Average D.C. Output Current @ Tc 100'C ........................
........... 30A
Surge Current, 8.3mSec .......................................... ............................. .................... .......
300A
Thermal Resistance, Junction to Case ..................................
... 1'C/W
Operating and Storage Temperature Range ........................
. .. -55'C to +150'C

=

POWER CYCLING

SWITCHING CHARACTERISTICS

These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

The switching times of th'ese ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL SPECIFICATIONS

•

POSITIVE OUTPUT

~

1

14

• •

CASE

NEGATIVE OUTPUT

'41-'

ins.

mm .

.875 MAX.
.135 MAX
250-.450
312 MIN.
.038-.043 OIA.
. 188 MAX. RAO.
1.177-1.197
655-.675

22.23 MAX.
3.43 MAX.
6.35-11.43
7.92 MIN.
0.97-1.09 OIA .
4.78 MAX. RAO .
29.90-30.40
1664-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAO.
3.84-4.09 OIA .

CASE

~iJE

F~,M

~~~'I
f"
H
I

e

J-~
~

C

UES2604-U ES2606

•

D

K

A

B
ANODE 1
ANODE 2

c
0

E
F
G
H

L

J
K
L
M

.205 .225
.420-.440
525 MAX. RAO.
.151 .16101A

TO-204AA (TO-3)

Nale.
Standard polarity is positive output.
For reverse polarity (negative output) add suffix "R", Ie. UES2604R.

4/79 (Rev. 1)

8-48

~UNITRDDE

UES2604-U ES2606
ELECTRICAL SPECIFICATIONS, PER LEG

Type

UES2604
UES2605
UES2606

200V
300V
400V

*Measured In Circuit IF

='

.5A, 1\1

= lA,

fREG

=:

Reverse Current

Tc = 12S'C

Tc =2S'C

Tc= 12S'C

Time*

1.25V
@ l5A
t. =3OOI'S

1.15V
@15A
t. -;; 300l'S

50llA

lOrnA

50nS

.25A

100 K

LIJ

'"'"

10-

r

50

......- 'l.
I

~ ;::::: P: V

20

~
.... 10
z

,/

UJ

'/

/V

U

0:
 ,<>
0:
;J? l?
0
.2

'"I

25'C

./

0

--

...

L

-~

.02

I

.01

1/
o 10 20 30 40 50 60 70 80 90 100 110 120 130 140150

V, -

II

II

I""

~

....

ffi

II

I

V, - FORWARD VOLTAGE (V)

 IIh) iJj

J

f--".:l''<''- .<..y'-..:y

.1
.05

~

r---

f-- .;:'.;'

V

/

V/

C

10 0

'/

[/ '/

5

'"0:
::J

>- ""iCTo,c

~

-~

100

V'

r

W
VI

LIJ

'It"c;.
125'C

K/

::J
(J

'"

Forward Current
vs. Forward Voltage

I

10 K

Recovery

Tc = 2S'C

Typical Reverse Current
vs. Reverse Voltage

<:
.:!
....Z

Maximum
Reverse

Maximum

Maximum
Forward Voltage

PIV

....

.01
.01.02 .05.1 .2 .5 1 2 5 10 20 50 100 200
t. - PULSE WIDTH ImS)

1000

o
2
N-

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

200

Output Current vs.
Case Temperature

Reverse-Recovery Circuit
100

50 P.

~

30

....Z

UJ
0:
0:

:J

20

u

....:J
Q.
....
:J
0

I
_0

10

~

~

~

+

-=_

'" 1\

10

NOTE 3

0..\

OSCI LLOSCOPE
NOTE 1

NOTES.

1. Oscilloscope: Rise time ~ 3nsi input impedance = son.
2. Pulse Generator: Rise time :s;;; 8nsi source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

100
110
120
130
140
150
Tc - CASE TEMPERATURE ('C)
UNITRODE CORPORATION, 5 FORBES ROAD
LEXINGTON, MA 02173 ' TEL. (617) 861-6540
TWX (710) 326-6509 ' TELEX 95-1064

25Vdc
IAPPROX.)

8-49

PRINTED IN U.S.A.

II

POWER SCHOTTKY MODULES

USM140C
USM145C
USM150C
Preliminary

lOOA, Up to 50V

DESCRIPTION
The Unitrode Schottky Module utilizes
high current Schottky rectifiers, in a
convenient single package, arranged in a
common cathode configuration. The
combination of low thermal resistance and
high conductance terminals makes this
device ideally suited for high current full
wave center·tap rectification or feed·
forward applications.

FEATURES
• Low Forward Voltage
• Low Recovered Charge
• High Reverse Transient Capability
• High Surge Current
• High Efficiency for Low Voltage Designs

ABSOLUTE MAXIMUM RATINGS (per diode unless noted)
USM140C

USM145C

USMl50C

Working Peak Reverse Voltage, VRWM ............................ , ........ 40V ............... 45V .............. 50V ............ .
DC Blocking Voltage, VR .......................................•.•....... 40V .........•..... 45V .............. 50V ............ .
Peak Repetitive Surge Voltage, VRSM .............•..... , .................. 48V ............... 54V. " •.......... 60V ............ .
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz
50 Percent Duty Cycle), IFRM ..................•.......................................... IOOA .......................•.......
Average Rectified Forward Current; 10 •••..•.••••...•.•••••.••.•.•.•.•.••. IOOA (@ Tc = 115·C Fullwave Configuration) .......... .
Non-repetitive Peak Surge Current, IFSM .........................•......................... IOOOA ............................ .
Peak Reverse Transient Current, IRM ....................•...... " ..................•..•. " •. 2A .............................. .
Storage Temperature Range, TSTG .................................................... -40·C to + 150·C ..•.•...................
Operating Temperature Range, TJ ................................................... -40·C to + 175·C ....................... .
Thermal Resistance, RSJBP ......................................................... O.7·C/W per module ...................... .

MECHANICAL SPECIFICATIONS
USM140C USM145C USM150C

"-r~rl "Ali \
1r ~~~B~ '1~(\
~I
W
r-

(A1)/

I

_

".

A

\~

L

F

TERMINAL (C)
(AI)
ELECTRICALLY COMMON
TO BASE PLATE

11/83

~

(A2)

A
B

C
0
E
F

G
H

J
K
L
T

INCHES
MAX.
MIN.
1.177
1.197
.030
.035
.365
.385
.370
.390
.880
.160
.1SO
.270
.290
.151
.161
.188 RAD.
.030
.035
.525 RAD.
TBP Ref. Point

-

Ml

MILLIMETERS
MIN.
MAX.
20.39
30.40
.762
.889
9.27
9.78
9.40
9.91
22.35
4.06
4.57
6.87
7.37
3.84
4.09
4.78 RAD.
.762
.889
13.34 RAD.
- Geometric

-

Center of Base Plate

8-50

~UNITRODE

USMI40C

USMI45C

USMI50C

=2S C unless noted) (Per Diode)

ELECTRICAL CHARACTERISTICS (Tap

o

CHARACTERISTICS

SYMBOL

CONDITIONS

=
=

Maximum Instantaneous
Reverse Current

iR

VR VRWM
(T BP I25°C)
Pulsewidth 400/ls
Duty Cycle 1%

Maximum Instantaneous
Forward Voltage

VF

IF 60A
(TBP I25°C)
Pulsewidth 300/15
Duty Cycle 1%

Maximum Instantaneous
Forward Voltage

VF

IF 100A
(TBP I25°C)
Pulsewidth 300/ls
Duty Cycle 1%

Ct

VR

dv/dt

VR

=
=

Capacitance
Voltage Rate of Change
Reverse Energy

=
=

=
=
=
=

=
=

=5V
=VRWM

See Reverse Energy Circuit

IRM

Typical Forward Current
vs Forward Voltage

LIMIT

UNITS

20
(75)

rnA

.690
(.630)

V

.860
(.775)

V

3000

pF

1000

V//15

2

A

II

Typical Reverse Current
vs Reverse Voltage

:

200
100

...:?
~

~~

20
10
150'C-

0:

'-'

50

1125'C~

0

0:

~

20

12

10

...

05

<-

...oSz
0:
0:

-f.J ill /
I

II

'I 1/
0.1

0.2

0.3

10

"'
"'~

3.0

0:

1.0

~

0.5

-

75'C
25'C

-4°'F

~

~

"W

0.2

I

0.1
05

06

0.7

08

09

10

---

~

V

0:

I

0.4

125 C
5.0

'-'

d

/ II

20

OJ

Ul

l I /- !I-

0.2

"'

(II 'I

'I

0:

~r

50

I"

/J VI /

0:

OJ

100

~~~

50

o

W.

m

~

----~

./

,/
25'

w w m w

~

~

V, - REVERSE VOLTAGE (% ofV,w.)

V, - FORWARD VOLTAGE (V)

Output Current vs
Case Temperature

Reverse Energy Circuit

120

100

-.......
................
.......... ......

w

...........

""

w
40

20

t p adjust for desired peak current in D.U.T. when Q turns off.
Q, must have fall time t, of lOOns max.

o
100

110

120

130

140

150

TB. - BASE PLATE TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

8-51

PRINTED IN U.S.A

POWER SCHOTTKY MODULES

USM20040C
USM20045C
USM20050C

200A, Up to 50V

Preliminary

FEATURES

DESCRIPTION

• Low Forward Voltage

The Unitrode Schottky Module utilizes
high current Schottky rectifiers, in a
convenient single package, arranged in a
common cathode configuration. The
combination of low thermal resistance and
high conductance terminals makes this
device ideally suited for higher current full
wave center-tap rectification or feedforward applications.

• Low Recovered Charge
• High Reverse Transient Capability
• High Surge Current
• High Efficiency for Low Voltage Designs

ABSOLUTE MAXIMUM RAnNGS (per diode unless noted)
USM20040C
. USM20045C
USM20050C
Working Peak Reverse Voltage, VRWM ........ _.. _.................. , ... _.. 40V ............... 45V .............. 50V ............ .
DC Blocking Voltage, VR ............ _... '" ............... _.... _......... 40V ............... 45V .............. 50V ............ .
Peak Repetitive Surge Voltage, VRSM ........................ _............. 48V ............... 54V .............. 60V ............ .
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz
50 Percent Duty Cycle). IFRM ....................... _.,. _. _............................... 200A .............................. .
Average Rectified Forward Current, 10 .................................... 200A (@ Te = 115°C Fullwave Configuration) ............ .
Non·repetitive Peak Surge Current, IFsM ....................................................2000A .............................. .
Peak Reverse Transient Current, IRM . . . .. .. . . . .. . . . . . . .. . . . . . . . .. . . . . . . . . . . . . . . .. . .. . . . . .. .. 2A, .............................. .
Storage Temperature Range, TsTG .................................................... -40°C to + 175°C ........................ .
Operating Temperature Range, TJ .................................................... -40°C to + 175°C ........................ .
Therl)1al Resistance, R BJBP ........................................................ 0.28°C/W per module .. _. _.. _. _. _... _.. _... .
Thermal Resistance, RBJBP-" _.. _.... _.. _. _...... _. _. _... _. _......... _.... _. _.. _..... 0.56°C/W per leg ..•....... _. _.......... _..

MECHANICAL SPECIFICATIONS
USM20040C USM20045C USM20050C

M2

Terminal Torque: 50 (Min.) 75(Max.) lb. - in.
Mounting Base Torque: 30(Min.) 40(Max.) lb. - in.

INCHES
MIN.
MAX.

EfI~I~
A1~A2!
c (ELECTRICALLY COMMON
TO BASE PLATE)

11/83

MILLIMETERS
MAX.
MIN.

H

66.80
2.63
1.35
1.40 34.29 35.56
.80 17.78 20.32
.70
.625
15.88
3.14
3.16 79.76 80.26
3.65
92.71
.25
.27
6.35
6.86
II, - 20 UNF With
Captive Lockwasher

T

TBP Ref. Point· Geometric
Center of Base Plate

A
B
C
0
E

F
G

8-52

~UNITRODE

USM20040C

USM20045C

USM20050C

ELECTRICAL CHARACTERISTICS (TBP = 25°C unless noted) (Per Diode)
CHARACTERISTICS

SYMBOL

CONDITIONS

LIMIT

Maximum Instantaneous
Reverse Current

iR

Pulsewidth = 400ps
Duty Cycle = 1%
(TBP = 125°C)

Maximum Instantaneous
Forward Voltage

VF

IF = 100A
Pulsewidth =300ps
Duty Cycle = 1%
(T BP = 125°C)

Maximum Instantaneous
Forward Voltage

VF

Capacitance

Ct

Voltage Rate of Change

dvldt

Reverse Energy

30
(125)

V
(.575)

IF = 200A
Pulsewidth = 300ps
Duty Cycle = 1%
(T BP = 125°C)

(.745)

VR = 5V

6000

pF

VR = VRWM

1000

Vips

2

A

.BOO

Typical Forward Current
vs Forward Voltage
200

~

....
15
0:

20

u

5.0

0:
::l

~

0:

150"C.,

2.0

Ii?

1.0

""

0.5

II

0.1
o

0.1

0.2

,

0.3

v, -

220

3:

....z

0:
0:
::l

....
::l
....
::l

10

w

5.0

75"C

0:

2.0

.$

1.0

V
f-'

06

0.7

0.8

0.9

1.0

FORWARD VOLTAGE (V)

I---'"

-

V
i-'"

V

1/

25"C

I

0.2
0.1

0.5

1-

0.5

I

o

10

20

30

40

50

60 70

80

90 100

VR - REVERSE VOLTAGE (% of VVRM)

Reverse Enerzy Circuit

...............
............

+lOV

........ r-....

160

L

..........

=24phy

""

120

Q.

0

20

~

-4O"C

W

u

0:
0:
::l
U
0:

0.4

-

12r.c
1

Ul

Output Current vs
ease Temperature

200

50

w

VI;' I

II/II

100

....z

W

doc/. 'U f- 75"C
/1 II - 25"C

0.2

<"

5

ll//V
II ff I

Cl
0:

I
~
-I

200

h~

10

I

400

...a w

50

V

Typical Reverse Current
vs Reverse Voltage

~

100

mA

30
(150)

See Reverse Energy Circuit

IRM

UNITS

USM20045C USM20050C

VR = VRWM

80

I
.E

40

t p adjust for desired peak current in D.U.T. when Q turns off.
Q, must have fall time t, of lOOns max.

o
100

110

120

130

140

150

TB. - BASE PLATE TEMPERATURE ("C)

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

8-53

PRINTED IN USA.

II

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

8·54

PRINTED IN U.S A.

POWER ZENERS & TRANSIENT VOLTAGE SUPPRESSORS

9-1

II

9·2

PRODUCT SELECTION GUIDE

POWER ZENERS AND TRANSIENT
VOLTAGE SUPPRESSORS
Transient Voltage Suppressors
Max.
Peak
Pulse Current
Ipp

Vc@ I..

Peak
Power
forlmS

(V)

(V)

(A)

(V)

CW)

TVS305
TV5310
TVS312
TVS315
TVS318
TVS324
TVS328
TVS348
TVS360
TVS4lO
TVS42D
TVS430

5.0
100
120
15.0
18.0
24.0
28.0
48.0
60.0
100.0
200.0
300.0

6.0
ILl
13.8
167
20.4
28.4
307
54
67
111
234
342

17
8.9
71
59
49
3.6
3.2

TVS505
TVS510
TVS512
TVS515
TVS518
TVS52'4
TVSS28

5.0
10.0
12.0
15.0
18.0
24.0
28.0

6.0
ILl
138
16.7
20.4
28.4
30.7

53.7
30.3
23.8
19.8
16.3
11.9
10.7

9.3
16.5
21.0
25.2
30.5
42.0
46.5

IN6451**

5.0
6.0
12.0
15.0
24.0
30.5
40.3
51.6

56
46
22
19
12
11
8
6

9
11
22.6
26.5
41.4
47.5
63.5
78.5

500

32.0
24.0
19.0
5.7

47.5
63.5
79.5
265.0

1500

Stand
.Qff
Part No.

f

c

I

f

:.

f

JJI •. .1N5462u

lN6463'"

IN6464"·
l.N6465*~···

·1.N6466**
..

lN6%7"*~,

IN6468"* .
>.

~

Max.

Min .
Breakdown
Voltage
8V'm",@lmA

Clamping

Voltage
V.

IN561O"

lN56110

1N5612'

8 IN5513'

5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0

@
@
@
@
@
@
@
@

Voltage' .

8.7
16.8
21.0
25
31
42
46
82
105
160
360
520

1.7
1.4
.91
.42
.28

25mA
20mA
5mA
5mA
2mA
1mA
ImA
1mA

33.0
43.7
54.0
191.0

CCl

150

500

•

"'Available In JAN & JANTX
"''''Aval!able In JAN, JANTX and JANTXV

Bi-directional Zeners
..' POWer

.. lW

Pllck8p Styi.

I
~
:.
i

t
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 9S,1064

AA

. . 3VL

,""

:!iYt
<

~

".

:

".;..

......... :;;;JJB;;/

UDZ8807
UDZ8808
UDZ8809
UDZ8810
UDZ8812

UDZ807
UDZ808
UDZ809
UDZ810
UDZ812

UDZ5807
UDZ5808
UDZ5809
UDZ5810
UDZ5812

UDZ8815
UDZ8818
UDZ8820
UDZ8824
UDZ8827

UDZ815
UDZ818
UDZ820
UDZ824
UDZ827

UDZ5815
UDZ5818
UDZ5820
UDZ5824
UDZ5827

40
45

UDZ8830
UDZ8833
UDZ8836
UDZ8840
UDZ8845

UDZ830
UDZ833
UDZ836
UDZ840
UDZ845

UDZ5830
UDZ5833
UDZ5836
UDZ5840
UDZ5845

60

. UDZ8860

UDZ860

UDZ5860

7.5
8.2
9.1

i

.

10
H!

15

18
20
24
27

'30
33

36

9-3

PRINTED IN U S.A.

POWER ZENERS AND TRANSIENT
VOLTAGE SUPPRESSORS
A

POWER ZENERS

UZ8706
UZ8707
UZ8708
UZ8709
UZ8710

IN446I *
IN4462*
IN4463*
IN4464*
IN4465*

IN5063
IN5064
IN5065
IN5066
IN5067

BZVI6C6V8***
BZVI6C7V5***
BZVI6C8V2***
BZVI6C9VI ***
BZVI6ClO ***

UZ4706
UZ4707
UZ4708
UZ4709
UZ4710

UZ8711
UZ8712
UZ8713
UZ8714
UZ87I5

IN4466*
IN4467*
IN4468*

BZVI6Cll ***
BZVI6CI2***
BZVI6CI3***

UZ4712
UZ4713

IN4469*

IN5068
IN4883
IN5069
IN5070
IN507I

BZVI6CI5***

IN4470*
IN4471*
IN4472*
IN4473*
IN4474*

IN5072
IN5073
IN4884
IN5074
IN5075

BZVI6CI6***
BZVI6CI8***
BZVI6C20***
BZVI6C22***
BZVI6C24***

IN4475*
IN4476*
IN4477*
IN4478*
IN4479*

IN5076
IN5077
IN5078
IN5079
IN5080

IN4480*
IN4481*
IN4482*
IN4483*
IN4484*
IN4485*

IN508I
IN5082
IN5083
IN5084
IN5085
IN5086
IN5087
IN5088
IN5089
IN5090

\~~~~"\;
::~.:"
,'.
,", . . .

"

B

UZ7706L
UZ7707L
UZ7708L
UZ7709L
UZ7710L

UZ7706
UZ7707
UZ7708
UZ7709
UZ7710

UZ47I5

IN4959*
IN4960*
IN496I *
IN5118
IN4962*

UZ7711L
UZ77I2L
UZ77I3L
UZ77I4L
UZ77I5L

UZ7711
UZ77I2
UZ77I3
UZ77I4
UZ77I5

UZ4716
UZ4718
UZ4720
UZ4722
UZ4724

IN4963*
IN4964*
IN4965*
IN4966*
IN4967*

UZ77I6L
UZ77I8L
UZ7720L
UZ7722L
UZ7724L

UZ77I6
UZ77I8
UZ7720
UZ7722
UZ7724

BZVI6C27***
BZVI6C30***
BZVI6C33***
BZVI6C36***
BZVI6C39***

UZ4727
UZ4730
UZ4733
UZ4736
UZ4739

IN4968*
IN4969*
IN4970*
IN4971 *
IN4972*

UZ7727L
UZ7730L
UZ7733L
UZ7736L

UZ7727
IN7730
UZ7733
UZ7736
UZ7740

UZ4743

UZ7745L

UZ7745

BZVI6C47***

UZ4747

IN5119
IN4973*
IN5I20
IN4974*
IN5I2I

UZ7740L

BZVI6C43***

UZ7750L

UZ7750

BZVI6C51***
BZVI6C56***

UZ475I
UZ4756

UZ7756L
UZ7760L

UZ7756
UZ7760

BZV16C62***
BZVI6C68***

., . ~ ,:l30\~(: .:;i

~ :,,:::

";\:,

.

.~

;

• Available as JAN, JANTX, & JANTXV
•• For 100j.lS pulse width
t 10% and 20% tolerance also available
••• Pro Electron Diodes 7% tolerance

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

9-4

PRINTED IN USA

PRODUCT SELECTION GUIDE

~C

CL

POWER ZENERS

Power

1W

1.5W

3W

3W

5W

5W

Package Style

A
UZ8770
UZ8775
UZ8780

A

A
IN5091
IN5092
IN5093
IN5094
IN4096
IN4095
IN4097
IN5096
IN5097
IN5098

A

B

B
IN5123
IN4979*
IN5124
IN4980*
IN5125
IN4981 *
IN4982*
IN4983*
IN4984*
IN4985*

70V
75V

SOY
82Y
90V

IN4487*
UZ8790

91V

'lOOV
HOV

'ifc:

i{2.
~

120V
130V
140V

150Y
160Y
"170\1
, 1SOY

'""
;:

190Y

(!I

200Y

w, 200V

IN4486*

UZ8110
UZ811 I
UZ8112
UZ8113
UZ8114
UZ8115
UZ8116
UZ8117
UZ8118
UZ8119
UZ8120

IN4488*
IN4489*
IN4490*
IN4491 *
IN4492*
IN4493*
IN4494*
IN4495*
IN4496*

~ 24{)V
'260\1
.~' , ·210Y'.
2so,V" .

,

300!J:,
32/W

330V
34QY,
3601/·

!SOY.
390'(

400V
f'ULSEPOWE~

*•

jOOW."

l4OW:~-~

BZVI6C75***

UZ4775

BZVI6C82***

UZ4782

BZVl6C91 ***
BZV16ClOO***

UZ4791
UZ4110
UZ4111
UZ4112
UZ4113

IN5099
IN5098
IN5100
IN5101
IN5102

UZ4115
UZ4116
UZ4118

IN5103
IN5104
IN5105
IN5106
IN5107
IN5108
IN5109
IN5110
IN5111
IN5112
IN5113
IN5114
IN5115
IN5116
IN5117

"230W

,~'

"';-,

<'

UZ4120

-'2iOW:
"

.:'.,

,>,

,.

.'1:26YJ/~~

'''~~>~~~T>:':~~~'~

6W

lOW

CL

C

UZ7770L
UZ7775L
UZ7780L

UZ7770
UZ7775
UZ7780

UZ7790L

UZ7790

UZ7110L

UZ7110

IN4986*
IN4987*
IN5127
IN4988*

II

IN5128
IN4989*
IN4990*
IN4991 *
IN5129
IN4992*
IN5130
IN4993*
IN5131
IN4994*
IN5132
IN4995*
IN5133
IN4996
IN5134

):}!~?~i';:; ~Y.f;;M ~i~.

• Available as JAN, JANTX, & JANTXV
•• For 1001lS pulse width
t 10% and 20% tolerance also available
••• Pro Eleelron Diodes 7% tolerance

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

9-5

PRINTED 1N USA

POWERZENERS

1N4461-1 N4496
JAN, JANTX & JANTXV

1.5 Watt, Military

FEATURES

DESCRIPTION

• 5 Times Greater Surge Rating than
JANIN3016 Series
• Low Reverse Current: to 50nA
• 1,4 Size of Conventional! Watt Zeners

Fused-in-glass, metallurgically bonded
1.5 watt zeners, qualified to MIL-S-19500/406.

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, Vz
....... 6.S to 200V
Continuous Current
.... See Table
Surge Current (S.3ms)
......... See Table
Surge Power.
.. ..................................... See Graph
.. ............. See Lead Temperature Derating Curve
Power..
Storage and Operating Temperature .
.. -65'C to +175'C

MECHANICAL SPECIFICATIONS
JAN, JANTX & JANTXV lN4461-1N4496

1

°i~;.J~P

Ba~~th~~I;~~J"'\

0 (

T

BODY A

i,155" TYP ....1 028" =.001
3.9mm
071mm =03

Iyl :D 0

JII
~O85"

!
o~~;~~~x.
I

TYPJ

2.2mm

1--,700" MIN.~.250" MAX,
17.8mm
6.3Smm
1.625" MIN.
41.3mm

Max. Surge Power
vs. Surge Duration

Power Dissipation
vs. Lead Temperature Derating Curve

~

z
o

~
is
'""'
~
x
":;

Typical Zener Impedance
VS. Zener Current

10Kr---~--~---r---

2.5 I--+-+-+-~t--+-+-----j

~ 5K
0:

2K

I
~-r----SQUARE

I
PULSE-

1.5

I--+-+-----'N

~

UJ

~

.5

1K

500

""'"

I----="""'j-~---+----+---I

~ 200

OJ
(fJ

§

"'~
""-"'

u

"'

iii

1Kr----~---~----,

r---t---"'oo;;::-t----t-----j
..........
100 r---t---P"'c--t-----j
50 I--_+---+-~~"'I;;;::_
............
-----i

100

:;

~

10

I----t----''''-f''''-~o;;::-----i

"'
N

201---~--_I---_+-~,,~

50
LEAD TEMPERATURE (OC)

10L---L---~-~i--~~

Ip.s

lOps
IOOJ,l.s
Ims
SURGE DURATION

1/79

9-6

lOms

1

.1

10
ZENER CURRENT (mA)

~UNITRDDE

JAN, JANTX & JANTXV 1N4461-1N4496
Electrical Specifications at 25°C

Type

±5%

Tolerance

IN4461
IN4462
IN4463
IN4464
IN4465
IN4466
IN4467
IN4468
IN4469
IN4470
IN4471
IN447?
IN4473
IN4474
IN4475
IN4476
IN4477
IN4478
IN4479
IN4480
IN4481
IN4482
IN4483
IN4484
IN4485
1N4486
1N4487
IN4488
IN4489
1N4490
1N4491
1N4492
1N4493
1N4494
1N4495
1N4496

Max. Zener Impedance ~

NomInal
Zener
Voltage t
V z @ In

Current

@

I"

Volts

mA

6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130

ISO

160
180
200

Test

37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.0
2.0
1.9
1.7
1.6
1.4
1.2

Maximum Ratings
MaxImum Reverse
Leakage Current

Z"

Voltage * ...
Regulation

In

I"

.6.BV Max

Ohms

Ohms

mA

Volts

#A

200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000

1.0
.5
.5
.5
.25
.25
.25
.25

.30
.35
.40
.45
.50
.55
.60
.65
.75
.80
.83
.95
1.0
!.l

5.0
1.0
.50
.30
.30
.30
.20
.10
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05

Zz

2.5
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
14
16
18
20
25
27
30
40
50
60
70
80
100
130
160
200
250
300
400

SOO

700
1000
1300
1500

@

I"

.2~

.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25

!.3
1.4

1.5
1.7
1.8
1.9
2.1
2.3
2.5
2.7
3.0
3.3
3.6
4.0
4.4
5.0
5.5
6.0
7.0
8.0
10.0
12.0

.25

.25
.25
.25
.25
.25

.25
.25

MaxImum

Cont.

Current
'RC9} VR,

.25
.25
.25
.25

.25
.25
.25
.25

Maximum
Surge
Current:t

V,

Iz•

Is

Volts

mA

Amps

4.08
4.50
4.92
5.46
8.0
8.8
9.6
10.4
12.0
12.8
14.4
16.0
17.6
19.2
21.6
24.0
26.4
28.8
31.2
34.4
37.6
40.8
44.8
49.6
54.4
60.0
65.6
72.8
SO.O
88.0
96.0
104
120
128
144
160

210
191
174
157
143
130
119
110
95
90
79
71
65
60
53
48
43
40
37
33
30
28
26
23
21
19
17

16
14
13
12

11

9.5
8.9
7.9
7.2

5.0
4.5

U

3.
3.0
2.6
2.4
2.2
1.8
1.6
1.4
1.2
!.l
.90
.80
.75
.66
.60
.54
.48
.45
.42
.39
.35
.32
.29
.26
.23
.20
.19
.18
.16
.14
.12
.10
.08

t All Zener voltages are measured with an automated test set using a 35 millisecond test time. Longer or shorter test times will have a corresponding effect on the measured value due to heating effects.
§.Zener impedance is derived from the 60 cycle AC Voltage created when AC current with RMS value of 10% of DC Zener test current is superim·
posed on the test current.
** j,BV is obtained by measuring the voltage change when the test current is changed from 10% to 50% of Iz max under DC conditions. During this
measurement the leads are heat sunk .375 .inch from the body and maintained at 25°C.

*

Ratings shown are for peak sinusoidal surge current of 8.3 ms duration, non-repetitive. The 8.3 ms square pulse rating is 71% of the value
shown. Rating exceeds JEDEC Registered Specification.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

9-7

PRINTED IN U.S.A.

II

1 N4954-1 N4995
1 N5968-1 N5969

POWER ZENERS

JAN, JANTX & JANTXV

5 Watt, Military

1 N4996

FEATURES
• 2 Times Greater Surge Rating than Conventional
10 Watt Zeners
• Small Physical Size

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, V,
Continuous Current
Surge Current (8.3ms)
Surge Power ...
Power.
Storage and Operating Temperature

DESCRIPTION
Fused·in·glass, metallurgically-bonded
5 watt zeners, qualified to MIL· S ·19500/356.

.. 5.6 to 390V

See Table
See Table
... See Graph
See Lead Temperature Derating Curve
-65°C to +175°C

MECHANICAL SPECIFICATIONS
J, JTX, JTXV IN4954·1N4995
J, JTX, JTXV IN5968·1N5969
IN4996

~

.3{lO" MAX.

7.62mm

----2.:.~~::.--

......
r--

""

lOOK

r\

~

,1~<",

~

~

~

'"

1'-....

o

L = Lead Length
from Body

25

50

75

100

r\

~

150

175

o

~

r-......

"" 1'-....

IK

::;; 200
100
lOOns

1#5

50~~~~~~~~~

«

~ 500

~ l\
125

~

............

~ 2K

\

§

w 100 f---:~~..,J.~""':::"'.k-+---+----j

..........

OJ

LEAD TEMPERATURE (OC)

4/82

10K

SQUARE PULSE

I'-....

a. 5K

~

I

o

ii'o

lKr-~_~~----r-~--~~

500~~~~~~--~+---~~

SOK

;; 20K

cs>'"

N"~~
~"
\
1'-.....

Typical Zener Impedance
vs. Zener Current

Max. Surge Power
vs. Surge Duration

Power Dissipation
vs. Lead Temperature Derating Curve
8

T.145" MAX.

fL

-1.1g'i';;~'

.975" MIN.
24.Bmm

__

O

BODY B

10#5

:;

5~+-----+~~",,"~"""""--

OJ

iii I ~+-----+-+----1----">R-"""'-...1,
N .5~+-----+-+----~+-~~:~~

.......

100#5

SURGE DURATION

9-8

10~+---~~~~~4.~~----j

0:

Ims

"

10ms

5

10

50 100

500

lA

ZENER CURRENT (mA)

~UNITRODE

1N4954-1N4995, 1N5968-1N5969, JAN, JANTX & JANTXV, 1N4996

Electrical Specifications at 25'C
Maximum Zener Impedance §
Type

Nominal
Zener
Voltage!
Vz @

±5%
Tolerance

'ZT

Z"tt

Test

Current

I"

Volts

mA

5.6
6.2
6.8
7.5
8.2
9.1
10.0

220
220
175
175
150
150
125

11
12
13
15
16

@

Zz@l n

'1t'::;;1mA

Maximum Reverse

leakage Current

Voltage
Regulation

LBV §§

Ohms

Volts

1.0
1.0

400
1000

0.4
0.5

1000
800
600
400
125

125
100
100
75
75

1.0
1.5
1.5
2.0
2.0
2.5
2.5
3.0
3.5
3.5

0.7
0.7
0.7
0.7
0.8
0.8
0.8
0.8
1.0

18
20
22
24
27

65
65
50
50
50

4.0
4.5
5.0
5.0
6.0

160
165
170
175
180

1N4969*
1N4970*
1N4971*
1N1I972*
1N4973*

30
33
36
39
43

40
40
30
30
30

8
10
11
14
20

1N4974*
1N4975*
1N4976*
1N4977*
1N4978*

47
51
56
62
68

25
25
20
20
20

1N4979*
1N4980*
1N4981*
1N4982*
1N4983*

75
82
91
100
110

1N4984*
1N4985*
1N4986 *
1N4987*
1N4988*

1N5968*
1N5969*
1N4954*
1N4955*
1N4956*
1N4957*
1N4958*
1N4959*
1N4960*
1N4961*
1N4962*
1N4963*
1N4964*
1N4965*
1N4966*
1N4967*
1N4968*

Ohms

Maximum Ratings

I, tt

V,

I,

Volts

~A

5000 5000
1000 1000
1SO 300
100 200
SO 100
25 50
25 25

Maximum

Maximum

Temperature Continuous
Coell.
Current
IZM
TC @'Zl

*

%/DC

4.28
4.74

.04
.04

5.2
5.7
6.2
6.9
7.6

.05

mA

Maximum

Surge

Current:t:
Is
Amps

.06
.07

865
765
700
630
580
520
475

20
20
40
32
24
22
20
19
18
16
12
10

.06
.06

1.1

10
10
10
5
5

15
10
10
5
5

8.4
9.1
9.9
11.4
12.2

.07
.07
.08
.08
.08

430
395
365
315
294

1.2
1.5
1.8
2.0
2.0

5
2
2
2
2

5
2
2
2
2

13.7
15.2
16.7
18.2
20.6

.085
.085
.085
.090
.090

264
237
216
198
176

9.0
8.0
7.0
6.5
6.0

190
200
220
230
240

2.5
2.8
3.0
3.0
3.3

2
2
2
2
2

2
2
2
2
2

22.8
25.1
27.4
29.7
32.7

.090
.095
.095
.095
.095

158
144
132
122
110

5.5
5.0
4.5
4.0
3.5

25
27
35
42
50

250
270
320
400
500

3.5
4.0
4.4
5.0
5.5

2
2
2
2
2

2
2
2
2
2

35.8
38.8
42.6
47.1
51.7

.095
.095
.095
.100
.100

3.2
3.0
2.8
2.5
2.2

20
15
15
12
12

55
80
90
110
125

620
720
760
800
1000

6.0
6.6
7.5
8.0
9.0

2
2
2
2
2

2
2
2
2
2

56.0
62.2
69.2
76.0
83.6

.100
.100
.100
.100
.100

100
92
84
76
70
63.0
58.0
52.5
47.5
43.0

120
130
ISO
160
180

10
10
8
5

170
190
330
350
450

1150
1250
1500
1650
1750

10
11
13
14
16

2
2
2
2
2

2
2
2
2
2

91.2
98.8
114.0
121.6
136.8

.100
.105
.105
.105
.110

39.5
36.6
31.6
29.4
26.4

1.00
0.80
0.75
0.70
0.60

1N4989*
1N4990*
1N4991*
1N4992*
1N4993*

200
220
240
270
300

5
5
5
5
4

SOO
550
650
800
9SO

1850
2000
2050
2100
2150

18
19
22
25
28

2
2
2
2
2

2
2
2
2
2

152
167
182
206
228

.110
.115
.115
.120
.120

23.6
21.6
19.8
17.5
15.6

1N4994*
1N4995*
1N4996

330
360
390

4
3
3

1175
1400
1800

2200
2300
2500

32
35
40

2
2
2

2
2
2

251
274
297

.120
.120
.120

14.4
13.0
12.0

O.SO
O.SO
0.40
0.35
0.30
0.25
0.22
0.20

8

130
140
145
150
155

2.0
1.8
1.6
1.4
1.2

* Available as JAN, JANTX & JANTXV •
t All zener voltages are measured with an automated test set using a 35 msec test time. longer or shorter test times will have a correspond·
ing effect on the measured value due to heating effects.

§ Zener impedance is derived from the 60-cycle voltage created when AC current with RMS value of 10% of DC zener test current is super-

imposed on the test current.
10% to 50% of Iz max under DC conditions. During this measurement the leads are heat sunk .375 inch from the body and maintained at 25°C.
Maximum current based on 5 Watt Rating. See lead temperature derating curves for proper mounting methods.
Figures shown are for peak sinusoidal surge current of 8.3 msec duration, non·repetitive. The 8.3 ms square pulse rating is 71% of the value
shown.
These specifications apply only to JAN and JANTX

~§.1BV is obtained by measuring the voltage change when the test current is changed from

*

*

tt

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

9-9

PRINTED IN U.S A.

POWER ZENERS

JAN &JANTX IN5610-1N5613

Transient Suppressor Diodes

FEATURES

DESCRIPTION

• 1500 Watts for 1ms Pulse Power Capability
• Small Physical Size
• Designed to be Used in Mi I-Std-704A Applications

Zener diodes with high surge capability
qualified to MIL-S-19500/434.

ABSOLUTE MAXIMUM RATINGS (at 25"C except where otherwise noted)
lNS.ll

lN5610

Zener Voltage
Forward Surge Current

200A.

Zener Surge Current, at 25°C
Surge Current, at 150°C
Surge Power

32.0A
5.5A

lN5612

lN5613

See Electrical Specifications
200A
200A

200A

24.0A
4.8A
See Graph

Storage and Operating Temperature

19.0A
3.2A

5.7A
1.0A

-65°C to +175°C

JAN & JANTX 1N5&10-1 N5613

Double C BODY

t

185"
0 .MAX.

1

Polarity: Cathode indicated by band.

Weight: 1.5 gram (approximate).
Mounting Position: Any. Leads: Tinned Copper.
Marking: Type number marked on unit.

1/79

9-10

Q:::O UNITRODE

JAN & JANTX IN5610-1N5613
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Max.
Reverse
Min. Zener
Voltage §
Vz@ ImA

Type

Max. Zener

Leakage

Voltage!
Vz @ Is

Current
IR@V R

Volts

Volts

Amps

IN561O*
IN56U*

33.0
43.7

47.5

32.0

63.5

24.0

IN5612*

54.0

7S.5

IN5613*

191.0

265.0

19.0
5.7

pA

Volts

Max.
Forward
Voltaget
@ 100 Amps
Volts

Typical
Temperature
Coefficient

4.S

.093
.094
.100

5.0
5.0

30.5
40.3

5.0

49.0

4.S
4.S

5.0

175.0

4.S

%/OC

.096

Notes: • Available as JAN and JANTX.
§ DUration of applied current ~ 300ms, duty cycle::::; 2%.
t utilizing a pulse which decays exponentially to 50% of the peak value in Ims. See graph entitled "Pulse Waveform."

:I: Peak Sinusoidal surge current of 8.3ms duration, non-repetitive.

APPLICATIONS
Voltage transients can be suppressed with series elements, shunt elements, or a
combination of both. These elements may be passive or active. For low and
medium power applications, a series resistor and zener clamp offer several
attractive features:
1. Simplicity of design
2. High reliability
3. Fast response time
The IN5610 series of surge suppressors will suppress the following transients
defined by MIL-S-704A without the use of any series limiting resistance beyond
that provided by the source:
1. All 600V transients (category #1 on chart below)
2. All BOV transients except those generated by the main voltage regulator
(category #2 on chart below)
3. The overvoltage transients generated by the main voltage regulator (category
#3 on chart below) will also be suppressed by the IN5610 series if:
a. A 20 ohm series limiting resistor is used, or
b. No series resistance is used but the zener is protected within 500 I'S by
using, for example, an SCR crowbar
The above statements are based on the source impedances and dv / dt characteristics as given in ARINC* Specification #413. This report entitled "Guidance for
Aircraft Electrical Power Utilization and Transient Protection" serves to further
define MIL-STD-704A for large aircraft electrical systems.

Peak Power Rating vs. Pulse Width"
lOOK

l
50K _ *Pulse Wi~th is defined as that _
point at which pulse power
decays to 50% of peak
20 K
.........
10K

~
0:
UJ

"

0

"-

2K

'"'"

1K

UJ

Maximum

Duration

Min. Source

Amplitude

Inductive
Switching

600 V

:s;; 10 p's

50 ohms

2.

BUS
Switching

BOV

:s;; 10 ms

15 ohms

3.

Main Voltage
Regulator

SO V

;;;, 10 ms

0.2 ohms

Source of
Transient

1.

Impedance

"

10

.1
TIME (ms)

Pulse Waveform

100%

~

~ "--

-

2
TIME (ms)

4

Peak Power Rating"
vs. Ambient Temperature
2000

50V/ms

1500

~
0:
UJ

1000

"

stands for Aeronautical Radio, Inc. (Annapolis, Maryland 21401)

..............

200
100
.01

dv/dt

These Surge Suppressors are useful in a variety of other applications where semiconductor devices must function reliably in an environment subject to extremely
high but short term surges.

* ARINC

------.........

500

"-

50

Category

..............

5K

11 Millisec~nd PUIS~

~

0

"-

500

a

-~

~

~

n

~

m

~

AMBIENT TEMPERATURE (Oe)

UNITRODE CORPORATION. s FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

9-11

PRINTED IN

u.s

A.

TRANSIENT
VOLTAGE SUPPRESSORS

IN6461-1N6468
JAN, JANTX & JANTXV

500W, Military
FEATURES

DESCRIPTION

• 500W Power Capability for 1 ms pulse
• Glass Encapsulated Device
• Clamping Time in Picoseconds

Transient voltage suppressor of noncavity
design and qualified to MIL-S-19500/551.
Metallurgically bonded for high reliabilty.

ABSOLUTE MAXIMUM RATINGS @ 25°C
Stand-off Voltage, VR ................................................... 5.0V to 51.6V
Peak Pulse Power (lms)*, PPR ................................................. 500W
Forward Surge Current @ tp = 8.33ms, l,sM ................................... 80A(pk)
Peak Pulse Current. .................. _............... _..................... see table
Breakdown Voltage ......................................................... see table
Power, Continuous (Derate @ 16.7mW;oC above T. = 25°C), PR • • • • • • • • • • • • • • • • • • 2.5W
Storage Temperature ............................................... -55°C to +200°C
Operating Temperature ............................................. -55°C to +175°C
'See Figure 2 for Peak Pulse Power

VS.

Pulse Duration.

MECHANICAL SPECIFICATIONS
J, JTX & JTXV IN6461·1N6468

BODY B

.040" .... 001

l02mm ±03

.975" MIN.
24.8mm

4/82

9-12

~UNITRODE

JAN, JANTX & JANTXV 1N6461·1N6468
ELECTRICAL SPECIFICATIONS @ 25°C
Max.
Max.
Clamping
Clamping
Voltage
@Ipp
Voltage
Max.
(tp 1ms) Temperature
(Ve MAX)
@Ipp
Inverse
Coefficient
oc VISR )
for tp 1ms
Voltage

Max Peak Pulse Current
Ipp
Min.
Test Current
Max.
Stand·off Breakdown
Leakage
IBR@
Voltage
Voltage
tp 300ms
Current
VR
Duty Cycle s; 2% I R @ VR
@ IBR

=

Part No.

1N6461

=

=
=

tp ~ 201'5
tr ~ 81's
(Fig. 4)

tp
1ms
tr 101'5
(Fig 3)

=

-V

eMs)!.

V

V

mA

I'A

A(pk)

A(pk)

V

V

%/"C

5.0

5.6

25

3000

56

315

9.0

-3.5

0.040

IN6462

6.0

6.5

20

2500

46

258

11.0

-3.2

0.040

1N6463

12.0

13.6

5

500

22

125

22.6

-3.8

0.050

1N6464

15.0

16.4

5

500

19

107

26.5

-3.8

0.060

1N6465

24.0

27.0

2

50

12

69

41.4

-3.6

0.084

1N6466

30.5

33.0

1

3

11

63

47.5

-3.6

0.093

1N6467

40.3

43.7

1

2

8

45

63.5

-3.5

0.094

1N6468

51.6

54.0

1

2

6

35

78.5

-3.4

0.096

1.

100
50

~

J>-

Peak Pulse Power vs.
Pulse Duration

2.

Derating Curve

125%

l'
100%

'\

z'"
~~

"'>-

::>""
"",
",0

0.,
..,N
""-

wee
Figure 4 for
eak Pulse vs Puls.e

\.

Tlille Characteristics)

75%

~

e,o

",>-

wZ
;

e..

~\

lOa

II

~

'"w
;<
'"""e..w
w
"'
ill

""'"

G:i

'"L 0.5

i\r

150

~

0: 0.3

200

0.1
lOOns

250

Ips

10115

TEMPERATURE (OC)

3.

4.

Current Impulse Waveform

Current Impulse Waveform

A

Ip =lOps)

"15
~

~

z

w

~ 50%
::>

~50%r---~~---t_---T_--~

::>

"l

""lw

.1

.1

°w

~

::>

~

e..

~

__

0%

~

4

a

10

20

"'"'"

30

40

50

..........

60

70

80

t-TIME"'s)

t-TIME(ms)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

I

1\

>-

>-

pUI!e tlmeldurabJn IS deJmed
as that pomt where the pulse
current decays to 50% of /p

(Rise time to 100 percent of Ip =8tJs)

::.

"15
~

a

lOms

100%

Pulse time duration IS defined
as that pOInt where the pulse
current decays to 50% of Ip
(Rise time to 100 percent of

"""

Ims

lOOps

PULSE TIME (tp)

100% . . - - - - - - - , - - - - - ' - , - - - - - , - - - - - - - ,

O%L-_ _ _L -_ _ _L -_ _ _

""

9-13

PRINTED IN U.S A.

TVS305· TVS430
TVS505·TVS528

TRANSIENT

VOLTAGE SUPPRESSORS
FEATURES

DESCRIPTION

• Up to 500W for ImS Pulse Power
Capability
• Clamping Time in Picoseconds
• Direct Applicability for all popular
Microprocessors and IC families
• Metallurgically bonded assembly system
to assure long term reliability
• Miniature glass encased hermetically
sealed package

Unitrode's TVS series of transient
voltage suppressors feature oxide
passivated zener type chips with fullfaced metallurgical bonds on both sides to
achieve high surge capability and negligible electrical degradation under repeated
surge conditions. The series is especially
useful in protecting microprocessor, MOS,
CMOS, TTL, Schottky TTL, ECl, I'l and
linear integrated circuits from spurious
transient disturbances.

ABSOLUTE MAXIMUM RATINGS @ 25'C
TVS5D5-TVS528

TVS3DS-TVS43D

Stand-off Voltage, VR ••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• 5 to 300V ................................. 5.0V to 28.0V
Peak Pulse Power (lmS)" ...................................................................... 150W ............................................ 500W
Forward Surge Current (8.3mS half sinewavel .............................................. 15A .............................................. 50A
Peak Pulse Current ......................................................................... See Table ....................................... See Table
Breakdown Voltage .......................................................................... See Table ........................................ See Table
Power, Continuous .................................................................................. 3W ............................................... 5W
Storage lind Operating Temperature ............................................ -65 to + 175'C ............................... -65to +175'C
'See Figures 3 and 4 for Peak Pulse Power vs Pulse DuratIOn.

MECHANICAL SPECIFICATIONS

I
°i~~·.J~P

1
Bag~t~~~~~t;~"

15'" TYP
39mm

[] (

I

BODY A

TVS505 Series

BODYB

028""!.. 001

j

0 7lmr =.03

I

111

TVS305 Series

)0

!
08'" MAX.
2. 16 m

t

~O85"
TYP
22mm

~ 7~~~~~:"N

_2~~5~'::'1.625" MIN
413mm

MECHANICAL SPECIFICATIONS

.040" ± .001
l.02mm ::t.03

.975" MIN.
24.8mm

2/80

9-14 .

~·UNITRDDE

TVS 305-TVS 430
TVS 505-TVS 528

ELECTRICAL SPECIFICATIONS @ 25'C

TVS
Par! No.

TVS305
TVS310
TVS312
TVS315
TVS318
TVS324
TVS328
TVS348
TVS360
TVS410
TVS420
TVS430
TVS505
TVS510
TVS512
TVS515
TVS518
TVS524
TVS528

Stand
·Off
Voltage
V,

Max.
Peak
Pulse Current*

Max.
Clamping

Max.
Clamping

Voltage*

Voltage*

BV(mlnl @ ImA

Max.
Leakage
Current
I,@V,

I""

Vc@lpp

Vc@lA

V

V

p.A

A

V

5.0
10.0
12
15
18
24
28
48
60
100
200
300
5.0
10.0
12.0
15.0
18.0
24.0
28.0

6.0
ILl
13.8
16.7
20.4
28.4
30.7
54
67
III
234
342
6.0
ILl
13.8
16.7
20.4
28.4
30.7

50
2
1
1
1
1
1
1
1
1
1
1
300
5
5
5
5
5
5

17
8.9
7.1
5.9
4.9
3.6
3.2
1.7
1.4
.91
.42
.28
53.7
30.3
23.8
19.8
16.3
11.9
10.7

8.7
16.8
21.0
25
31
42
46
82
105
160
360
520
9.3
16.5
21.0
25.2
30.5
42.0
46.5

Min.
Breakdown
Voltage

Max.
Clamping
Voltage*
Vc @
SA
lOA

V

V

-

-

-

-

-

-

-

-

-

-

-

-

-

7.4
13.2
16.5
19.7
23.8
32.4
35.9

-

-

-

-

7.9
14.4
18.5
22.2

-

26.0
37.0
41.0

*For ImS pulse: see Figure 1.

II
Pulse Waveform

1.

G
z
t«
0:

j"
'0
~
t-

Z

w
~100
OJ

'-'
w

:3
OJ

D..

I 50

U

"'

\

75

r\

\

N

=

"0

PULSE TIME DURATION (tp)
POINT
WHERE I, DECAYS TO 50% OF Ipp

~

Derating Curve

2.
100

50

~

25

----

r--

0.."

t-TIME (ms)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

9-15

o

o

50

\

\

\

100
150
TEMPERATURE ('C)

200

PRINTED IN U.S.A.

TVS305·TVS430
TVS505-TVS528

3.
10

~

ffi

l<

oQ.

"'~

"
Q.

~

Peak Pulse Powervs. Pulse Duration

100

""

~

4.

Peak Pulse Power vs. Pulse Duration
EXPONENTIAL
PULSE

EXPONENTIAL
PULSE
~
~

"~,

0.1

Q.

,01

IO"S

ImS

100"S

a:

10

~

~

"
<
'"
"'I
Q.

"

'" "

~ ......

"'

~

Q.

0:

IO"S

PULSETIME (I,>

5.

"

,I

10mS

"

10mS

ImS

100"S

PULSE TIME (t,>

6. Clamping Voltage vs. Pulse Current

Capacitance VI. Stand·Off Voltage

10,000

100
EE FIGURE I FOR WAVEFORM

~
OJ

'"~

MEASURED
@ZEROBIAS-

LII
U

Z

~

~1000

MEASURED @

•

C3

I

=MEASURED @ ZERO

~

""

1

lE
505

I
u
>

~f

STAND-OFF VOLTAGE -

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

--

10

SIS
512

I-- 510
505

:3u

TVS

3

1

100

10
V. -

~

20

ii:
:;

,,-,

MEASURED@~ '}

100

528
525
518

§;

BI~~

'\ '\

50
40
30

1

(V)

10
I, -

9-16

20

50

100

PULSE CURRENT (AI

PRINTED IN U.S.A.

TVS305-TVS430
TVS505-TVS528

CHOOSING AND SPECIFYING THE PROPER TVS

The following terms are generally used in specifying Transient Voltage Suppressors (TVS):

1.

Stand-off Voltage (VR) is the highest reverse voltage at which the TVS will be non-conducting_

2.

Minimum Breakdown Voltage (BV min) is the reverse voltage at which the TVS conducts
1 mill i-amp. This is the point where the TVS begins to limit the transient.

3.

Maximum Clamping Voltage (V e max) is the maximum voltage the TVS will allow during a
transient "spike."

Figure 7 graphically shows all three terms.

II
+
Figure 7

The three most important factors in choosing the appropriate TVS for an application in their order
of importance are:

1.

Pulse power (Pp) - Choose the TVS series that will handle the Transient Pulse Power_
Transient Pulse Power is equal to the clamping voltage (Ve> times the peak pulse current
(ipp). The pulse duration vs. pulse power graph on the TVS data sheet can then be used to
determine the maximum allowable pulse duration. (Figure 3 or 4).

2.

Standoff voltage (VR) - From the TVS series selected, choose the device with the stand-off
voltage equal to or greater than the normal circuit operating voltage.

3.

Maximum Clamping Voltage (V eMAx ) - Determine the clamping voltage of the device chosen for the
transient given and be sure it is below the voltage that might damage any components.

For further information see Unitrode Application Note U-79, "Guidelines for Using Transient Voltage
Suppressors. "

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (7l0) 326-6509 • TELEX 95-1064

9-17

PRINTED IN

u.s

A.

UDZ807 SERIES
UDZ5807 SERIES
UDZ8807 SERIES

AC POWER ZENERS
1, 3 and 5 Watt Types

FEATURES

DESCRIPTION

•
•
•
•

These devices consist of two fused-in-glass
zeners brazed cathode to cathode to provide
zener action in both directions.

Zener Characteristics in Both Directions
7.S to GOV
High Surge Ratings
Small Physical Size

ABSOLUTE MAXIMUM RATINGS
7.S to GOV
See Tables
..... See Tables
. ..See Graph

Zener Voltage .
Continuous Current
Surge Current (8.3ms)
Surge Power.
Power

See Data Sheets for Related Series
(UZ8807, UZ807 and UZS807)

Storage and Operating Temperature

-6S'C to +17S'C

MECHANICAL SPECIFICATIONS
UDZ807 SERIES

UDZ5807 SERIES UDZ8807 SERIES

1 & 3 WATT 5 WATT

~

.Dr1

P[

~E --+--_c~=~f-----*MARKING: "D." followed by last 3 to 4
digits and part number.
Example: 1.5 volt ±10%.
1 wett type 'would be

marked: "08807".

Dimensions
1 Watt UDZ8807 Seri••

Ins.

A
B

C

a
E

450
085
275
.028
700

MAX.
MAX.
TYP
± .DOI
MIN

5 Watt UDZ5807 Seri••

3 Watt UDZ807 Series

mm
11.43 MAX.
2.16 MAX.
6.99 TYP.
71 ± .03
1778 MIN.

mm

Ins.

A
B

C

a
E

.450 MAX.
.085 MAX.
.275 TYP.
.028 ± .DOI
.7DO MIN.

11.43 MAX.
2.16 MAX.
6.99 TYP.
.71 ± .03
17.78 MIN .

9-18

ins.

A
8
C
0
E

.5DO
.145
.325
.040
.975

MAX.
MAX.
TYP.
± .001
MIN.

mm
12.70 MAX .
3.68 MAX .
8.26 TYP.
1.02 ± .03
24.77 MIN .

~UNITRDDE

UDZ807 SERIES UDZ5807 SERIES

Electrical Specifications at 25°C
Type

±10%

Tolerance *

Nominal
Zener
Voltaget
Vz @ lIT
Volts

Test
Current
IZT

Max. Zener Imped §
Zz
@
lIT

mA

Ohms

UDZ8807 SERIES

Maximum Ratings"

Maximum
Leakage @ Reverse Voltage •
±5%
±lO%
Current

Maximum
Cont.
Current
lno

Maximum
Surge
CurrenH
Is

Volts

Volts

mA

Amps

4.9
5.4
5.9
6.6
8.6
10.8
12.9
14.4
17.3
19.4
21.6
23.7
25.9
28.8
32.4
43.2

5.2
5.7
6.2
6.9
9.1
11.4
13.7
15.2
18.2
20.6
22.8
25.1
27.4
30.4
34.2
45.6

125
115
105
95
85
63
52
47
40
35
31
28
26
24
22
15

5
4.5
3.9
3.37
2.25
1.65
1.12
1.12
0.825
0.825
0.825
0.675
0.562
0.562
0.450
0.337

4.9
5.4
5.9
6.6
8.6
10.8
12.9
14.4
17.3
19.4
21.6
23.7
25.9
28.8
32.4
43.2

5.2
5.7
6.2
6.9
9.1
11.4
13.7
15.2
18.2
20.6
22.8
25.1
27.4
30.4
34.7
45.6

400
360.
330
300
250
200
170
150
125
110
100
90
85
75
65
50

10
8
7
5
4
3
2
2
1.5
1.5
1.5
1.2
1
1
0.8
0.6

#A

1 WATT ZENERS - Specifications apply for both directions.
7.5
34
UDZ8807
6
50
8.2
31
7
UDZ8808
30
9.1
28
UDZ8809
8
10
10
25
UDZ8810
8.5
3
12
23
UDZ8812
9
1
15
17
UDZ8815
14
0.5
18
14
UDZ8818
20
0.5
20
12.5
UDZ8820
0.5
23
24
10.5
25
UDZ8824
0.5
27
UDZ8827
9.5
35
0.5
30
8.5
40
0.5
UDZ8830
33
7.5
UDZ8833
45
0.5
7.0
36
UDZ8836
50
0.5
40
6.5
62
UDZ8840
0.5
45
6
75
UDZ8845
0.5
60
4
125
0.5
UDZ8860
3 WATT ZENERS - Specifications apply for both directions.

UDZ807
UDZ808
UDZ809
UDZ810
UDZ812
UDZ815
UDZ818
UDZ820
UDZ824
UDZ827
UDZ830
UDZ833
UDZ836
UDZ840
UDZ845
UDZ860

7.5
8.2
9.1
10
12
15
18
20
24
27
30
33
36
40
45
60

75
75
75
75
65
50
40
40
30
25
25
20
20
20
15
10

500
300
200
100
10
10
5
5
5
1
1
1
1
1
1
1

3
4
4
5
5
6
8
9
10
12
15
21
21
27
37
70

*For ±5% voltage tolerance change the 3rd number from the right from 8 to 7 i.e. UDZ8807 to UDZ8707, etc.
tAli zener voltages are measured with an automated test set using a 35ms test time. Longer or shorter test times will have a corresponding
. effect on the measured value due to heating effects.
§Zener impedance is derived from the 6o-cycle voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current.
**D.C. Ratings are based on the lead temperature conditions shown in the data sheets covering the UDZ8807, UOZ807, and UDZ5807
series devices. Other conditions will affect the power ratings of all the families except the 1 watt zener family. However, the surge values
given apply for any mounting conditions including printed circuit board mounting.
:f:Figures shown are for peak sinusoidal surge current of 8.3ms duration using 60 cycle AC. The 8.3ms square pulse rating is 71% of the value
shown.

Typical Reverse Surge Power
vs. Surge Duration
lOOK
50
20

~ 10K
0:

UJ

50

~

20
0.. 1K
UJ
50
-' 20
:::>
0.. 100

r-...

SQUARE PULSE f - -

..........

~ .............

J"--.....

......... .........

'-.
.........

..............

r-...-...........JW
~~
I
47"7"
S

'"

~~4~
~S<'I/ <'S

50

~

20
10
lOOns

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEl. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

S

~47"7"S_.-

ltts

IOtts
IOOtts
lms
PULSE DURATION (S)
For Sinusoidal Pulse, Peak Value
is 1.4 Times Value Shown

9-19

........
IOms

PRINTED IN U.S.A.

II

UDZ807 SERIES UDZ5807 SERIES

Maximum Ratings··

Electrical Specifications at 25'C
Type

::t:l0%

Tolerance *

Nominal
Zener
Voltaget
Vz @ IZl
Volts

Max. Zener Imped §

ZI

Test
Current
lIT

lIT

mA

Ohms

@

Maximum
Leakage @ Reverse Voltage
±10%
Current
#A

5 WATT ZENERS - Specifications apply for both directions.
UDZ5807
7.5
175
1.8
500
8.2
150
1.8
400
UDZ5808
UDZ5809
9.1
150
2.5
200
UDZ5810
10
125
2.5
100
UDZ5812
12
2.5
50
100
UDZ5815
15
75
15
3.5
18
10
UDZ5818
65
4
UDZ5820
65
4.5
10
20
UDZ5824
24
50
5
10
UDZ5827
27
50
6
10
UDZ5830
30
40
8
10
UDZ5833
33
40
10
5
UDZ5836
36
30
11
5
5
UDZ5840
40
14
30
UDZ5845
45
30
20
5
UDZ5860
60
20
40
5

UDZ8807 SERIES

Volts

4.9
5.4
5.9
6.6
8.6
10.8
12.9
14.4
17.3
19.4
21.6
23.7
25.9
28.8
32.4
43.2

±5%

Maximum
Cont.
Current
lIM

Maximum
Surge
Currentt
Is

Volts

mA

Amps

5.2
5.7
6.2
6.9
9.1
11.4
13.7
15.2
18.2
20.6
22.8
25.1
27.4
30.4
34.2
45.6

620
570
510
470
385
300
255
220
180
155
140
130
120
105
95
75

40
32
24
22
18
12
9
8
6.5
6
5.5
5
4.5
4
3.5
2.5

'For ±5% voltage tolerance change the 3rd number from the right from 8 to 7 i.e. UOZ8807 to UOZ8707, etc.

tAli zener voltages are measured with an automated test set using a 35ms test time. Longer or shorter test times will have a corresponding
effect on the measured value due to heating effects.
§Zener impedance is derived from the 6()..cycle voltage created when AC current with RMS value of 10% of DC zener test current is
posed on the test current.

superim~

**D.C. Ratings are based on the lead temperature conditions shown in the data sheets covering the UOZ8807, UDZ807, and UDZ5807
series devices. Other conditions will affect the power ratings of all the families except the 1 watt zener family. However, the surge values
given apply for any mounting conditions including printed circuit board mounting.
:j:Figures shown are for peak sinusoidal surge current of 8.3ms duration using 60 cycle AC. The S.3ms square pulse rating is 71% of the value
shown.

UNITROOE CORPORATION· 5 FORBES ROAO
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

9·20

PRINTED IN U.S.A.

POWER ZENERS

UZ706 SERIES
UZ806 SERIES

3 Watt

FEATURES

DESCRIPTION

• 10 Times Greater Surge Rating than Conventional
1 Watt Types
• Small Physical Size

Fused-in-glass metallurgically bonded
3 watt zener diodes.

ABSOLUTE MAXIMUM RATINGS

6.S to 400V

Zener Voltage, Vz
Continuous Current
Surge Current (S.3ms)
Surge Power
Power
Storage and Operating Temperature

See Table
See Table
See Graph
See Lead Temperature Derating Curve
to +175°C

-we

II

MECHANICAL SPECIFICATIONS
UZ706 SERIES

1
°i5;':~P

Band

0

1

155" TYP
3.9mm

mdlcate~......

cathode end"

r-

], 0

l"mm,U
I~~~'~

1

BODY A

028" :::':: 001

0 7lmm :..':: 03

!
I I :r::

111

oS::

j

UZ806SERIES

I

I 1

O~5;~:;:~X
j

700" MIN
250" MAX
17.8mm ~ 635mm

___

1.~15;~~N_

UZ Prefix is identified by a Blue or Red Cathode Band

Power Oissipation

vs. Lead Temperature Derating Curve

VS.

Typical Zener Impedance
vs. Zener Current

Surge Power
Surge Duration

10K
5K

""- ~

. ~ 2K

'" lK
w

~

a.

lLJ

200

CJ

en

w

--

z

g

175

:;;

'"Zw

50

""'"'

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

lOOns

Ips

lK

f----.21"---;;::----"";....==+------i

lOllS

lOOtls

Ims

SURGE DURATION (5)

9-21

100 f-----'~~~~......:-=:':-±,__-__1

w

a.

10
50
75
100 125 150
LEAD TEMPERATURE (OC)

r--;::--,----,----,-----,

u

20
25

S

'" ""'"' ""-

500

~ 100

SQUARE PULSE

10K

10f---+--"""'~""'~....r--__1

W
N

""'"'
lOms

.1 L-__
.1

~

____- L____

~~~

1
10
100
ZENER CURRENT (mA)

IA

PRINTED IN U.S.A

UZ706 SERIES. UZ806 SERIES

Maximum Ratings

Electrical Specifications at 25°C
Nominal

Type*

±5%

~

Max. Zener
Impedance §

Zener

Voltage t
Vz@ln
Jedec"'*

Maximum Reverse
Leakage Curren!

Test
Current

±5%

IZT

Zz@I ZT

I,@V,

± 10%

V,

V,

Typ.
Maximum
Temp.
Continuous
Coefficient
Curren!
IZM
Tc @ 'ZT

*

Maximum
Surge

Current1:
Is

Tolerance

R~gistration

Volts

rnA

Ohms

pA

Volts

Volts

%/OC

rnA

Amps

UZl06
UZl07
UZ708
UZl09
UZl10
UZ712
UZl13
UZ714
UZ715
UZ716
UZ718
UZ720
UZl22
UZ724
UZl27
UZ730
UZ733
UZl36
UZ740
UZ745
UZ750
UZ756
UZl60.
UZ770
UZ775
UZl80
UZ790
UZ110
UZ111
UZ112
UZll3
UZ114
UZ115
UZ116
UZll7
UZ118
UZ119
UZ120
UZ122
UZ124
UZ126
UZ128
UZ130
UZ132
UZ134
UZ136
UZ138
UZ140

1N5063
1N5064
1N5065
IN 5066
1N5067
1N4883
1N5069
1N5070
1N5071
1N5072
1N5073
1N4884
1N5074
1N5075
1N5076
1N5077
1N5078
1N5079
1N5081
1N50B3
1N5085
1N50B7
1N50B8
1N5091
1N5092
1N5093
1N4096
1N4097
1N5096
1N5097
1N5098
1N5099
1N4098
1N5100
1N5101
1N5102
1N5103
1N5104
1N5105
1N5106
1N5107
1N5109
IN5110
1N5111
1N5113
1N5114
1N5115
IN5117

6.8
7.5
8.2
9.1
10.0
12
13
14
15
16
18
20
22
24
27
30
33
36
40
45
50
56
60
70
75
BO
90
100
110
120
130
140
150
160
170
1BO
190
200
220
240
260
280
300
320
340
360
380
400

75
75
75
75
75
65
50
50
50
50
40
40
30
30
25
25
20
20
20
15
15
10
10

2
2
3
3
4
5
6
6
6
7
8
9
10
10
12
15
21
21
27
37
50
70
70
90
100
115
150
175
250
325
375
550
650
700
750
850
900
950
1100
1300
1500
1700
1900
2100
2400
2700
3000
3500

500
300
200
100
40
10
10
10
10
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1

5.2
5.7
6.2
6.9
7.6
9.1
9.9
10.6
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
30.4
34.2
38.0
42.6
45.7
53.3
56.0
60.8
68.5
76.0
83.6
91.2
98.8
106
114
122
129

4.9
5.4
5.9
6.6
7.2
8.6
9.3
10.1
10.8
11.5
12.9
14.4
15.8
17.3
19.4
21.6
23.7
25.9
2B.8
32.4
36.0
40.3
43.2
50.5
54.0
57.7
64.B
72.0
79.2
86.4
93.6
101
108
115
122
129
137
144
158
173
187
202
216
230
245
259
274
288

.04
.04
.05
.05
.06
.07
.07
.07
.07
.07
.08
.08
.08
.08
.09
.090
.090
.090
.095
.095
.095
.095
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.105
.105
.110
.110
.110
.110

440
400
360
330
300
250
230
210
200
185
170
150
135
125
110
100
90
85
75
65
60
55
50
45
40
35
30
30
25
25
20
20
20
20
18
18
15
15
15
12
12
10
10
9
9
8
8
7

10.0
8.0
7.0
6.0
5.0
4.0
4.0
4.0
3.0
3.0
2.0
2.0
2.0
1.5
1.5
1.5
1.2
1.0
1.0
0.8
0.8
0.7
0.6
0.6
0.5
0.4
0.4
0.4
0.3
0.2
0.20
0.20
0.20
0.15
0.15
0.10
0.10
0.10
0.09
0.09
0.08
0.08
0.07
0.07
0.06
0.06
0.06
0.06

10

10
10
8.0
5.0
5.0
5.0
5.0
5.0
5.0
4.0
4.0
4.0
4.0
4.0
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
2.0
2.0

137

144
152
167
182
198
213
228
243
258
274
289
304

Specify 20% voltage tolerance by changing first numeral of type number trom 7 to 9. (UZ709 becomes UZ909) or from 1 to 3 (Ullli becomes UZ31l).
Specify 10% voltage tolerance by changing first numeral of type number from 7 to 8. (UZ709 becomes UZ809) or from 1 to 2 (Ul111 becomes
UZ21l).

** Jedec registration applies to ±5% tolerance zeners only.
t :#e~~"o~ tho~t~::S~~:dmV~~~~r~~eW!~hh~~tfnU~o~;~~~.test set using a 35 ms test time. Longer or shorter test times willi have a corresponding
§ Zener impedance is derived from the 60-cycle AC voltage created when AC current with RMS value of 10% of DC zener test current is super~
imposed on the test current.
current based on 3 watt rating. See lead temperature derating curves for proper mounting methods.
t Figures shown are for a peak sinusoidal surge current of 8.3ms dUration using 60 cycle AC. The 8.3ms square pulse rating is 71% of
the value shown.

* Maximum

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710, 326·6509 • TELEX 95-1064

9-22

PRINTED IN U S.A

UZ4706 SERIES
UZ4806 SERIES

POWER ZENERS
5 Watt, Industrial

FEATURES

DESCRIPTION

• 2 Times Greater Surge
Rating than Plastic Types
• Small Physical Size
• Impervious to Moisture

Fused-in-glass 5 watt zeners with the same
electrical specs as the IN5342-1N5388
series.

ABSOLUTE MAXIMUM RATINGS
..... 6.8 to 200V
. See Table
See Table
See Graph
Sep Lead Temperature Derating Curve
-65'C to +175'C

Zener Voltage, V,
Continuous Current
Surge Current (8.3ms)
Surge Power
Power
Storage and Operating Temperature .

II

MECHANICAL SPECIFICATIONS
UZ470B SERIES

UZ480& SERIES

BODY B

UZ Prefix is identified by a Blue or Red Cathode Band

10K

~

0

;::

~ 2K

""-Vi

c: 1K
w
;;: 500

"'-

~ 200
~ 100

c:
w
;;:

::>

0

Q.

X

"'-

SQUARE PULSE

o

0

":;;

1Kr-~~-'-'----'--r---'--'
500~~~~~+----+--~---r~

"-

5K

z

If)

(/)

1

L

Typical Zener Impedance
vs. Zener Current

Surge Power
vs. Surge Duration

Power Dissipation
vs. Lead Temperature Derating Curve

50

"

'"

I".....,

20

10

0

lOOns

0
LEAD TEMPERATURE ('C)

l.u5
10,u.5
loo,u.5
Ims
SURGE DURATION (5)

9-23

IOms
ZENER CURRENT (mA)

~UNITRDDE

UZ4706 SERIES UZ4806 SERIES

Electrical Specifications at 25°C
Nominal
Zener
Voltage t

Type

Tolerance

UZ4706
UZ4707
UZ4708
UZ4709
UZ471 0
UZ4712
UZ4713
UZ4715
UZ4716
UZ4718
UZ4720
UZ4722
UZ4724
UZ4727
UZ4730
UZ4733
UZ4736
UZ4739
UZ4743
UZ4747
UZ4751
UZ4756
UZ4762
UZ4768
UZ4775
UZ4782
UZ4791
UZ4110
UZ4111
UZ4112
UZ4113
UZ4115
UZ4116
UZ4118
UZ4120

±10%
Tolerance

UZ4806
UZ4807
UZ4808
UZ4809
UZ4810
UZ4812
UZ4813
UZ4815
UZ4816
UZ4818
UZ4820
UZ4822
UZ4824
UZ4827
UZ4830
UZ4833
UZ4836
UZ4839
UZ4843
UZ4847
UZ4851
UZ4856
UZ4862
UZ4868
UZ4875
UZ4882
UZ4891
UZ4210
LJZ4211
UZ4212
UZ4213
UZ4215
UZ4216
UZ4218
UZ4220

ZZK

Maximum
Leakage @ Reverse Voltage

Test
Current
IZT

IZT

IZI<= IrnA

Volts

mA

Ohms

Ohms

itA

6.8
7.5
8.2
9.1
10
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200

175
175
150
150
125
100
100
75
75
65
65
50
50
50

1
1.5
1.5
2
2
2.5
3
3.5
3.5
4
4.5
5
5
6
8
10
11
14
20
25
27
35
42
50
55
80
90
100
125
170
190
330
350
450
500

1000
800
600
400
125
140
145
150
155
160
165
170
175
180
190
200
220
230
240
250
270
320
400
500
620
720
760
800
1000
1150
1250
1500
1650
1750
1850

500
400
200
100
75
50
25
15
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5

VZ@IZT

±5%

Zz

40

40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5

@

@

Maximum Ratings

Reverse Voltage

Max. Zener Impedance §

Current

Maximum
Cant.
Current
IZM

Maximum
Surge

Current;
Is

±10%

±5%

Volts

Volts

mA

Amps

4.9
5.4
5.9
6.6
7.2
8.6
9.3
10.8
11.5
12.9
14.4
15.8
17.3
19.4
21.6
23.7
25.9
28.1
31
33.8
36.7
40.3
44.6
49.0
54.0
59.0
65.5
72.0
79.2
86.4
93.6
108
115
129
144

5.2
5.7
6.2
6.9
7.6
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0

675
620
570
510
470
385
350
300
275
255
220
195
180
155
140
130
120
105
100
96
85
81
73
61
60
55
50
45
40
38
35
31
30
25
22

32
26.5
19.2
17.6
16
14.4
12.8
9.6
8
7.2
6.4
5.6
5.2
4.8
4.4
4.0
3.6
3.2
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.3
1.1
1.0
.8
.64
.60
.56
.48
.40

Maximum VF @ 1.0 Amp = 1.2 Volts for all types

tAli zener voltages are measured with an automated test set using a 35 ms test time. Longer or shorter test times will have a
corresponding effect on the measured value due to heating effects.

<

§Zener impedance is derived from the 60-cycle voltage created when AC current with RMS value of 10% of DC zener test current is superimposed
on the test current.

+~~~!J~~~~~o~~:;: ~~~S~e:a~i~~~;~if~~ ~~t~~ ~~~~~n~~~:ri~

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

ms duration using 60 cycle AC.

9·24

PRINTED IN U S.A.

POWER ZENERS

UZ5706 SERIES
UZ5806 SERIES

5 Watt

DESCRIPTION
Fused·in.glass, metallurgically·bonded
5 watt zeners.

FEATURES
• 2 Times Greater Surge Rating than Conventional
10 Watt Zeners
• Small Physical Size

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, Vz
Continuous Current
Surge Current (B.3ms)
Surge Power
Power.
Storage and Operating Temperature

6.B to 400V
" See Table
See Table
See Graph
. See Lead Temperature Derating Curve
-o5'C to +175'C

MECHANICAL SPECIFICATIONS
UZ5706 SERIES

UZ5806 SERIES

II

BODY B

UZ Prefix is identified by a Blue or Red Cathode Band

Power Dissipation
vs. Lead Temperature Derating Curve

Surge Power
vs. Surge Duration

Typical Zener Impedance
vs. Zener Current

lOOK

~

50K

z
o
>=
«

~20K
0:

"-

iii

OJ

Ci

"-

10K

~ 5K

(/)

0:
OJ

!:
o
"-

OJ

2K

'"

IK

0:
:::l

r----- ----

"" ,"'"

r-'"

OJ

r-...

o

__~__~__L-~__-L~~

25

50

75

100

125

ISO

LEAD TEMPERATURE ('C)

175

100
lOOns

;;:

"'" "'"

200
OL-~

~
«
c
~

1

(/) 500

x«

;;:

!,us

s 100

SQUARE PULSE

10,«5

lOO,us

10f-+---~~~~~~~~'--1
5 f-+-----t--N....-""'-''''''''--'''-'''''

0:

OJ

~
N

Ims

SURGE DURATION (S)

9·25

f-N~""-I:--"'i-<::--"'~-+----t--1

50~~~~~~~~~

""

IOms

1f-+-----t--r_--_1_~~~~,
.5f-+-----t~r_--_1_-+~~V~-1
.1~~

.5

I

__

~~L_

5

10

_ __L~_ _ _ _L-~

50 100

500 ·IA

ZENER CURRENT (mA)

~UNITRDDE

'uz5106"SERIES

Maximum Ratings

Electrical Specifications at 25'C

Type

±S%

Nominal
Zener

*
±10%

Max. Zener
Impedance§

Maximum Reverse
Leakage Current

Test

Voltage t
Vz @ IZI

Current

IZT

ZZ@IZI

I,

±S%
V,

± 10%
V,

Volts

Volts

Tolerance

Tolerance

Volts

mA

Ohms

uA

UZ5706
UZ5707
UZ5708
UZ5709
UZ5710
UZ5712
UZ5713
UZ5714
UZ5715
UZ5716
UZ5718
UZ5720
UZ5722
UZ5724
UZ5727
UZ5730
UZ5733
UZ5736
UZ5740
UZ5745
UZ5750
UZ5755
UZ5760
UZ5170
UZ5175
UZ5780
UZ5790
UZ5110
UZ5111
UZ5112
UZ5113
UZ5114
UZ5115
UZ5116
UZ5117
UZ5118
UZ5119
UZ5120
UZ5122
UZ5t24
UZ5126
UZ5128
UZ5130
UZ5132
UZ5134
UZ5136
UZ5138
UZ5140

UZ5806
UZ5807
UZ5808
UZ5809
UZ5810
UZ5812
UZ5813
UZ5814
UZ5815
UZ5816
UZ5818
UZ5820
UZ5822
UZ5824
UZ5827
UZ5830
UZ5833
UZ5836
UZ5840
UZ5845
UZ5850
UZ5856
UZ5860
UZ5870
UZ5875
UZ5880
UZ5890
UZ5210
UZ5211
UZ5212
UZ5213
UZ5214
UZ5215
UZ5216
UZ5217
UZ5218
UZ5219
UZ5220
UZ5222
UZ5224
UZ5226
UZ5228
UZ5230
UZ5232
UZ5234
UZ5236
UZ5238
UZ5240

6.8
7.5
8.2
9.1
10.0
12
13
14
15
16
18
20
22
24
27
30
33
36
40
45
50
56
60
70
75
80
90
100
110
120
130
140
150
160
170
180
190
200
220
240
260
280
300
320

175
175
150
150
125
100
100
100
75
15
65
65
50
50
50
40
40
30
30
30
25
20
20
20
15
15
15
10
10
10
10
8
8
8
8
5
5
5
5
5
5
4
4
4
4
3
3
3

1.0
1.5
1.5
2.0
2.0
2.5
3.0
3.0
3.5
3.5
4.0
4.5
5.0
5.0
6.0
8
10
11
14
20
25
35
40
50
55
80
90
100
125
170
190
230

500
400
200
100
75
50
25
20
15
10
10
10
10

340

360
380
400

UZ5806 SERIES

t8

10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5

330

350
380
450
470
500
550
650
750
850
950
1100
1200
1400
1500
1800

5.2
5.7
6.2
6.9
7.6
9.1
9.9
10.6
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
30.4
34.2
38.0
42.6
45.7
53.3
56.0
60.8
68.5
76.0
83.6
91.2
98.8
106.0
114.0

~

J~~:8

5
5
5
5
5
5
5
5
5
5
5
5
5

137
144
152
167
182
198
213
228
243
258
274
289
304

4.9
5.4
5.9
6.6
7.2
8.6
9.3
10.1
10.8
11.5
12.9
14.4
15.8

tU

21.6
23.7
25.9
28.8
32.4
36.0
40.3
43.2
50.5
54.0
57.7
,64.8
72.0
79.2
86.4
93.6
101.0
108.0

m:8

129
137
144
158
173
187
202
216
230
245
259
274
288

Typ.
Temp.
Coefl.
Tc @ IZT

'*

'C

.05
.06
.06
.06
.07
.07
.08
.08
.08
.08
.085
.085
.085
.090
.090
.09
.09
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.105
.105
.110
.110
.110
.115
.115
.120
.120
.120
.120
.120
.120
.120
.120

Maximum

Continuous
Current
IZM

*

Maximum
Surge

Current
Is

*

AmDS

mA

675
620
570
510
470
385
350
320
300
275
255

40
32
24
22
20
18
16
14
12
10
9.0
8.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.8
2.5
2.3
2.0
1.8
1.6
1.4
1.2
1.0
0.80
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.24
0.23
0.22
0.21
0.20

220

' 195
180
155
140
130
120
105
95
85
80
75
65
60
55
50
45
40
38
35
33
31
30
27
25
24
22
20
18
17
16
15
14
13
12
12
11

Temperature Range, Operatmg and Storage -6S·C to +17S·C,
• Specify 20% tolerance by changing the second numeral of type number from 8 to 9 (UZS809 becomes UZS909) or from 2 to 3 (UZS211 becomes
UZS311).
t All zener. voltages are measured with an automated test set using a 35 millisecond test time. Longer or shorter test times will have a
correspondins; effect on the measured value due to heating effects.
§ Zener impedance is derived from the 6o-cycle AC voltage created when AC current with RMS value of 10% of DC zener test current is
superimpOsed on the test current.
Maximum current based on 5 watt rating:. See lead temperature derating curves for proper mounting methods.
Figures shown are for a peak sinusoidal surge current of 8.3ms duration USing 60 cycle -AC. the 8.3ms--square pulse rating is 71% of the
value shown.

**

Several of the above types now have JEDEC IN type numbers. The following cross-reference table lists the appropriate IN
numbers; specifications are same as above.
'
JEDEC ""

UNITRODE TYPE

JEDEC ""

UNITRODE TYPE

1N5118
1N5119
lN5120
1N5121
1N5122
1N5123

JEDEC ""

UZ5714
UZ5740
UZ5745
UZ5750
UZ5760
UZ5770

1N5124
1N5125
1N5126
1N5127
1N5128
1N5129

UZ5780
UZ5790
UZ5114
UZ5117
UZ5119
UZ5126

1N5130
1N5131
1N5132
1N5133
1N5134

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6S40
TWX (710) 326-6509 • TELEX 95-1064

9-26

UNITRODE TYPE

UZ5128
UZ5132
UZ5134
UZ5138
UZ5140

PRINTED IN U.S.A.

POWER ZENERS

UZ7706L and UZ7806L SERlE,S
UZ7706 and UZ7806 SERIES

6 Watt, Military, 10 Watt Military

FEATURES

DESCRIPTION

• High Surge Rating
• Small Physical Size
• leaded and Stud Packages Available

Fused-in-glass, metallurgically bonded
6 watt leaded zeners and 10 watt
stud-type zeners.

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, VZ .
Continuous Current
Surge Current (S.3ms)
Surge Power .
Power

... 6.S to lOOV
.... See Table
.. See Table
See Graph
UZ7706l & UZ7S06l See lead Temperature Derating Curve
UZ7706 & UZ7S06 @lOO'C Case
lOW
Storage and Operating Temperature
... -65'C to +175'C

MECHANICAL SPECIFICATIONS
UZ7706L and UZ7806l SERIES

BODYCLead Mount

Band indicates
cathode end

---,------i~~~~P. []

-.1_'1_ ----- j-:__
.925" MIN.

,
I

1,0'''TYP.

l

2.7mm
.400" MAX

~'~~--~2;;:~~---------1
UZ Prer", is identified by a Blue or Red Cathode Band

UZ7706 and UZ7806 SERIES

#4-40

x :~;g:: !~:;:~~~

BODY C - Stud Mount

LONG THREAD

POLARITY: Cathode to Stud is standard. Re·
verse polarity denoted by "R" suffix.

FINISH: Metal parts gold plated per MIL-G45204, Type II.
WEIGHT: 1.5 grams (max.)
INSTALLATION PRECAUTIONS: Maximum unlubricated stud torque: 28 inch~ounces. Do
not use a screwdriver in the turret slot for
installation purposes, or damage may result.
Also available with insulated stud. Reference Design Note-17.

9-27

~UNITRDDE

•

UZ7706l and UZ7806l SERIES
UZ7706 and UZ7806 SERIES
Electrical Specifications at 25·C

Maximum Ratings

Maximum Reverse
Type

*

Nominal
Zener
Voltage t
VZ@IZT

Leakage Current

Max. Zener
Impedance §

Test
Current
I"

I.@V,

ZZ@IZT

±5%
V.

± 10%
V,

Typ.
Temp.
Coell.
Tc@ I"

Maximum
Continuous
Current*
I""

Maximum
Surge
Current
I,

*

±5%

Tolerance

±10%
Tolerance

Volts

mA

Ohms

~A

Volts

Volts

%!"C

mA

UZ7706
UZ7707
UZ7708
UZ7709
UZ7710

UZ7806
UZ7807
UZ7808
UZ7809
UZ7810

6.8
7.5
8.2
9.1
10.0

350
325
300
275
250

0.6
0.7
0.8
1.0
1.0

1000
800
200
150
100

5.2
5.7
6.2
6.9
7.6

4.9
5.4
5.9
6.6
7.2

.04
.04
.05
.05
.06

1350
1250
ll50
1020
950

50
41
31
29
26

UZ7712
UZ7713
UZ7714
UZ7715
UZ7716

UZ7812
UZ7813
UZ7814
UZ7815
UZ7816

12
13
14
15
.16

200
200

1.3

150
150

1.5
1.5
2.0
2.5

75
50
40
30
20

9.1
9.9
10.6
ll.4
12.2

8.6
9.3
10.1
10.8
11.5

.07
.07
.07
.07
.07

770
700
640
600
550

23
21
20
17
15

UZ7718
UZ7720
UZ7722
UZ7724
UZ7727

UZ7818
UZ7820
UZ7822
UZ7824
UZ7827

18
20
22
24
27

130
120
100
100
90

3.5
4.0
4.5
5.0
6.0

20
20
20
20
20

13.7
15.2
16.7
18.2
20.6

12.9
14.4
15.8
17.3
19.4

.08
.08
.08
.08
.09

500
440
390
360
310

II
10

UZ7730
UZ7733
UZ7736
UZ7740
UZ7745

UZ7830
UZ7833
UZ7836
UZ7840
UZ7845

30
33
36
40
45

80
70
60
60
50

8
10
12
15
20

20
10
10
10

22.8
25.1
27.4
30.4
34.2

21.6
23.7
25.9
28.8
32.4

.090
.090
.090
.095
.095

280
260
240
210
180

8.5
7.5
7.0
6.4
5.5

UZ7750
UZ7756
UZ7760
UZ7770
UZ7775

UZ7850
UZ7856
UZ7860
UZ7870
UZ7875

50
56
60
70
75

50
40
40
35
30

22
30
35
40
45

10
10
10
10
10

38.0
42.6
45.6
53.2
56.0

36.0
40.3
43.2
50.4
54.0

.095
.095
.095
.095
.095

170
160
150
130
120

4.6
4.1
3.7
3.3
3.1

UZ7780
UZ7790
UZ71l0

UZ7880
UZ7890
UZ7210

80
90
100

30
25
20

60
75
90

10
10
10

60.8
68.4
76.0

57.6
64.8
72.0

.095
.095
.100

llO
100
90

2.9
2.6
2.3

175

10

Amps

13
12
9

lOooe Case derate linerally to zero at 175°C Case.
Lead Mounted: See lead temperature derating curve.

Power Rating: Stud Mounted: 10 Watts at

Temperature Range: Operating and storage -65°C to 175°C.

* Specify 20% tolerance by changing the second numeral of type number from 8 to 9 (UZ7809 becomes UZ7909) or from 2 to 3 (UZ7210 becomes UZ731O). Specify leaded
version by adding an L suffix (UZ7809 becomes UZ78D9L).
All zener voltages are measured with an automated test set using a 35 msec test time. Longer or shorter test times will have a corresponding effect on the measured value due
to heating effects.
§ Zener impedance is derived from the 6O-cycle voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current.
Ratings Based on lODoC Case temperature; for leaded devices multiply by 0.6.
Figures shown are for a peak sinusoidal surge current of 8.3ms duration, non-repetitive. The 8.3ms square pulse rating is 71 % of the value shown

t

*
t

V5.

Power Dissipation
Lead Temperature Derating Curve

V5.

Surge Power
Surge Duration

Typical Zener Impedance
vs. Zener Current
100 ~'------'-'-----'-'--r--'
50 ~~~--t-~---~~~---+~

lOOK

50K
~20K
;;; 10K
OJ

"

~OJ

5K

""

SQUARE

~ IK

=>

~

""-

25

50
75
100 125 150
LEAD TEMPERATURE (OC)

175

UNITRODE CORPORATION' 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064 ..

'"c~
:;;

10 f--'''jo.;:~~~~",,""---II--+-----+----I

5 t----'t-<:-"'-<:""'~~"""~l---+_--__+~

1 t---~---">.,f""...J-'''''-'''-'if..?-k-:'::"---+~
.5 t---+_----P...J-'.....""":-"'-~2-

0:
OJ

"-.,.

200
o

B
OJ

'-.,.

"'" ""- ""-

2K

'" 500

0'-----'"---~-L-----'-----'------3i

PULS~

~
N

.1 t---+_----t-+-----'k-f"oo;:-"""<.t-=-:l

.05t---+-----t-~----~~~""<.t~

100

lOOns

IJls
lOJls lOOJls
lms
SURGE DURATION (S)

9-28

10ms
ZENER CURRENT (mA)

PRINTED IN U.S.A

UZ8706 SERIES
UZ8806 SERIES

POWER ZENERS
1 Watt, Industrial

FEATURES
• High Surge Ratings
• A Quarter the Size of Conventional! Watt Zeners
• Impervious to Moisture

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, VZ .
Continuous Current
Surge Current (B.3ms)
Surge Power
Power.
Storage and Operating Temperature

DESCRIPTION
One watt zener diodes, hermetically
sealed in glass.

. ........................ 6.B to 200V
See Table
See Table
......... See Graph
. . See Lead Temperature Derating Curve
-6S'C to +17S'C

II
MECHANICAL SPECIFICATIONS
UZ8706 SERIES UZ8806 SERIES

BOOYA

UZ Prefix is identified by a Blue or Red Cathode Band

Power Dissipation
vs. Lead Temperature Derating Curve
1.5

VS.

,.--".--,--,.,..---,~-.-~-,----,

5K

...

~ 2K

z
;::

ffi

..x

lK

"' 200

"'"

"':i'

1""'-

'"

.

"'"

SO
20

:E

..

~
w

.""'-..

SO
75
100 125 150
LEAD TEMPERATURE (oG)

175

lOOns

""'-.,
bs

lOlLS

lOOps

Ims

SURGE DURATJDN (5)

9-29

10

f---~~~t-~--"".p-..2'-<..,.----I

N

......

10
25

100

""'
:E

r-...

~ 100

0

100V
75V

u

'"

.5

s

SQUARE PULSE

~ sao

iii

'"i5
"''":;:

1Kr-~~~r-~~~r-~~--'

10K

~
0

Typical Zener Impedance
VS. Zener Current

Surge Power
Surge Duration

IOms

1

.1

10
ZENER CURRENT (rnA)

100

~UNITRDDE

UZ8706 SERIES UZ8806 SERIES
Maximum Ratings

Electrical Specifications at 25'C
Type

Nominal
Zener
Voltage t

Vz @
Tolerance

±5%

±10%
Tolerance

UZ8706
UZ8707
UZ8708
UZ8709
UZ 8710
UZ8712
UZ8713
UZ 8714
UZ 8715
UZ8716
UZ8718
UZ 8720
UZ8722
UZ 8724
UZ 8727
UZ8730
UZ 8733
UZ 8736
UZ8740
UZ8745
UZ 8750
UZ8756
UZ 8760
UZ8770
UZ 8775
UZ8780
UZ8790
UZ8110
UZ8111
UZ 8112
UZ 8113
UZ8114
UZ8115
UZ8116
UZ8117
UZ8118
UZ8119
UZ 8120

UZ8806
UZ 8807
UZ8808
UZ 8809
UZ 8810
UZ8812
UZ8813
UZ8814
UZ8815
UZ8816
UZ8818
UZ8820
UZ8820
UZ8824
UZ8827
UZ 8830
UZ8833
UZ8836
UZ8840
UZ 8845
UZ8850
UZ8856
UZ8860
UZ8870
UZ 8875
UZ8880
UZ8890
UZ8210
UZ8211
UZ8212
UZ8213
UZ8214
UZ 8215
UZ8216
UZ8217
UZ 8218
UZ8219
UZ8220

Test
Current

Max. Zener
Impedance§

'ZT

ZZ @ Izr

mA

Ohms

IZT

Volts

6.8
7.5
8.2
9.1
10
12
13
14
15
16
18
20
22
24
27
30
33
36
40
45
50
56
60
70
75
80
90
100
110
120
130
140
150
160
170
180
190
200

37

34

31
28

25
23
21
19
17
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2

3.5
4.0
4.5
5.0
7.0
9.0
10
12
14
16
20
22
23
25
35
40
45
50
62
75
85
110
125
150
175
200
250
350
450
550
700
850
1000
1100
1200
1300
1400
1500

Maximum Reverse
Leakage Current
±5%
±10%
V.
I,@V,
V.
~A

50
30
10
3.0
2.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5

Volts

5.2
5.7
6.2
6.9
7.6
9.1
9.9
10.6
11.4
12.1
13.7
15.2
16.7
18.2
20.5
22.8
25.1
27.3
30.4
34.2
38.0
42.5
45.6
53.2
57.0
60.8
68.4
76.0
83.6
91.2
98.8
106'
114
121
129
137
144
152

Volts

4.9
5.4
5.9
6.6
7.2
8.6
9.3
10.1
10.8
11.5
12.9
14.4
15.8
17.3
19.4
21.6
23.7
25.9
28.8
32.4
36.0
40.3
43.2
50.4
54.0
57.6
64.8
72.0
79.2
86.4
93.6
100
108
115
122
129
137
144

Typ.
Temp.
Coefficient

ContinuOU!I
Current

Maximum
Surge
Current

T.C. @ IZT

I""

Is

%/'C
0.04
0.04
0.05
0.05
0.06
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.095
0.095
0.095
iJ.095
0.095
0.095
0.095
0.095
0.095
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10

rnA

Amps

140
125
115
105
95
85
80
74
63
60
52
47
43
40
35
31
28
26
24
22
20
17
15
14
12
11
10
9.5
8.5
8.0
7.2
6.8
6.3
5.9
5.6
5.2
5.0
4.7

Maximum

*

*

5.00
4.50
3.90
3.37
2.77
2.25
2.25
2.25
1.65.
1.65
1.12
1.12
1.12
0.825
0.825
0.825
0.675
0.562
0.562
0.450
0.450
0.390
0.337
0.337
0.277
0.225
0.225
0.225
0.165
0.112
0.112
0.112
0.112
0.082
0.082
0.056
0.056
0.056

t All zener voltages are measured with an automated test set uSing a 35 millisecond test time. Longer or shorter test times Will have a corresponding effect on the measured value due to heating effects.
§Zener impedance is derived from the 50-cycle AC voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current.
*Ratings are based on free air. TA is 25~C. For use at 1.5 watts see derating curve.
;Figures shown are for a peak sinusoidal surge'current of 8.3 ms duration using 60 cycle AC. The 8.3 ms square pulse rating is 71% of the
value shown.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 0217-3 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

9-30

PRINTED IN U,S,A.

THYRISTORS (SCRs, PUTs)

10-1

10-2

THYRISTORS (SCRs & PUTs)

PRODUCT SELECTION GUIDE

TO-IS

TO-9

TO-39

"Available as JAN and JANTX types.
"Available as JAN type.
'''Available as JAN, JANTX, JANTXV types.
t3mA available from factory

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10-3

PRINTED IN

u.s

A

THYRISTORS (SCRs & PUTs)

PRODUCT SELECTION GUIDE

ULTRAFAST SWITCHING

~
IP

~

.ITl ....,
TO·tS

'~

. ':'"

5: J~

.0 '

t;.;

"

tq

= 'f'"

:~

,

>';,r.,., "

t;.;

, : ".:;

:

2~0t~

.;~

:

l~
TO·59

.

GA200 GA300
GA20l GA301
2Dn!! (TYP.) ,

60V

",

GB200A
GB20lA

'Ul[l.l>,

'"

c,

GB3DDA
GB30lA

..:.:.:.

'~~~
",,',

:~~..-:..,

"

••• ->

~

RADIATION HARDENED SCRs
-,

O,,:Stllte
0.4A

Current

'rt-~
Paclqtge StYle

....

a

!;(

3QV,

Iii'"
tt'i~

~I

6t)V'

GAIOI

'"

.

~!:i.lQ

~~~"
w

Q.
;.;
a>Q.ur~
w~,u.(

TO·tS

T(l-18

'

~l

SOY

GA102

I-

Iv "= 70pA@R..= 10K

U13Tl

'r, .. 2i 10K ohms, VD == SV
'TM == 2A (pulse test)
Specified test circuit
VGRM == SV, anode open
IG == - lS0p.A, VD == SV

-

15
15

100
100

-

p.A
p.A
V
rnA

RGK == 1K, VDRM ==
Rating
RGK == 1K, VRRM == - Rating
RGS == 100 ohms, VD== SV
IG == - lS0p.A, VD== SV

1.0
500
15

V
p.A
rnA

RGK == 100 ohms, VD == 5V
RGK > 10K ohms, VD== SV
IG == - 150p.A, VAA == 5V

'DRM
IRRM
VGD
'H

0:2
0.2

VGT
IGT
'H

-

-

-

-

-

-

+

+

tAli values in this table are JEDEC registered.
Note, Voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a resistor, 1 K
or smaller, or other adequate gate bias is used.

Triggering and Bias Stabilization
Gate Trigger Voltage

Gate Trigger Current

1.4 r---------,---,----,--,------,r------,-,.---.

800
~

~ 600

...

z

'"~

400

;'"

P>-..

§:

V//> ALL UNITS FIRE
fj/// l0
~ 200
~
V/// V/ //~
a:
...
// //V/
'"«... V/~ ~ /N/Y~
min.
K
'"I
NO UNITS FIRE
::>

1.2 f-------1--+--f---+------1--+--+----I

'"

<.>

a:

~IGTmax.

.8

~LT~~r¥~~~+-~f_-+--+----I

.6

~~~~~7LAf~+f7Y~~~~~

.4

f-------1f_~~~~+f~~~~~~

.2

f----f---j

~

'"~
'"

IG1

I

~

_~-200

-400
-65

~

'"'"
>

D
-25
25
50
75 100 125
TJ - JUNCTION TEMPERATURE ('C)

UNITRODE CORPORATION· 5 FORBES ROAD
LI;XINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

~_~L_~_-L_~_L_~_-L~

-65

150

10-6

-25
25
50
75
100 125
TJ - JUNCTION TEMPERATURE ('C)

150

PRINTED IN U.S.A.

2N1870A-2N1874A

Holding Current
1. Max. Holding Current (Current Bias)

2_ Max. Holding Current. (Resistor Bias)
50

50

<"

<"

.s...

20

~ 10

~

Ir
Ir

::>

o

I--I--I--

I G =-1.5mA

t--

r=;;;; ~ I-- t--

"
C
o

I

;:

1::=

10

~

::>
o

"~

3K~~ ...............

IG =-.05mA

X

;:

I

.2

_r.

.1

;:
-25
25
50
75
100 125
TJ - JUNCTION TEMPERATURE ('C)

.2

.1

4. Min. Holding Current (Resistor Bias)

<"

....5.
"'

z
0

r-+:-;:A

I

_r.

Z

i

.1
.05
-65

IG =-.05mA

-I-

F==:::.1i<,

~

.5 t - - 3 1 -

t-- 1-

.2

r-- r--

Z

i

t--t---.

-25
25
50
75
100 125
T J - JUNCTION TEMPERATURE ('C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

r--

I

-~

r----..

1\
- j-i.
t--

J:

::;:
.15

r-

0

.5

= 100!)

300,

..J

.5

.2

R~K

"Cz

r- ~

1.5

J:

i

10

::>

I

o

20

Ir
Ir

2

...I

Z

JUNCTION TEMPERATURE ('C)

-

50

r---

o

~

TJ

10

::>

~~

·~6·~5--_-:2L5--L---:2:'::5-J50--:-7.L5--:"10L.0-1-'-25::--:"I50

150

20

Ir
Ir

r-- t::::::",

X

50

~

.......,

I--rt::::

.5

3. Min. Holding Current (Current Bias)

"o

RGK = 10'j(S;;: ~

2

o

.5

-65

~

-~

~~

...I

.05 L-_----'_---"--_-"-----'_---'--_--'---_L-----'

~
...

--

~oon

J:

J:

_:1:.

-

20

Ir

. . N--

..J

X

'"
Ir

I-;
r:::::: ~ t~

z

~
::;:

....5.z

.1

.05

150

-65

10-7

RGK = 10K

I-- ~ b-

r-- l -

--

r--t--r-..

I-

t-- r--

-25
0
25
50
75
100 125
T J - JUNCTION TEMPERATURE ('C)

150

PRINTED IN U.S.A.

2N1870A-2N1874A
Current Ratings - Thermal Design

1.

On-State Current VS. Voltage

50

10

...
Z

0:
0:

::>

...
I<.l

::>

...I<.l

.5

I

en
Z

..., IXI'
" r II
1--",_)

.1
.05
.05

.1

...>
;::
...;::"...

'II

0:

II-~

.2.5
2
10
V,- ON VOLTAGE (V)

20

I,

50

.5

90

...
0:
0:

20

...

10

::>
<.l

.001

r---

--

l-

f!:

If!

z

0

...'"-"
...>
;::
...;::"...

--

«

0:

-........

-.......
.oi""--

.003-

.5

.1 ......

I?---

~
~

.1

~

20

...z

10

I-

''""

"-\

0:
0:

::>

25
TA

m.. -

::>

en

'""-«...

AFTIR SurGE ~
.1

5. Average Current vs, Case Temperature
POWER DISSIPATION (W)
2
1.5
1
.5

10-' 10

.5

~
Iz

~ 1.2
1~

0:
0:

"'

<.l

<.l

z

.6

~

o

~

"'
~
en
Z

6~

.4

.3

~

0

I
~
.3

100
T c m.. -

~

___ J_ _ _ _- L_ _ _

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

~~

10'

10'

o

150

10-8

POWER DISSIPATION (W)
.5
.375
.25
.125

~

~ "~

,,"
"""""~
"""
'\

~\

~

,

~0.
~

.1

L-_~

120
110
130
140
MAX. CASE TEMPERATURE ('C)

= 100'C

L

"'- ~\

>
«

.2

90

.2

ci

r----+-----r----~~~~~~r_--~

o L - _ - L_ _ _

Tc

10-' 10-' 10- 1 1
10
SURGE DURATION (5)

6;- i'--..

I-

I

J

.4

::>

.8

DC
1~

0:
0:

::>

"'

-4

PA .625

o

DC

...

,

6. Average Current VS. Ambient Temperature

1.4 r - - - , - - , - - - ; - - - r - - - - , - - r - - - ,

....
z

,,

DASL LINk:
MAY" \:""b,
NOT BE SUSTAINED FOR 0.1 SECONDS - ('I

.2

.05

150

BE~ORE ~URG~ = 0

BLJCKIN~ VOL~AGE

.5

I

1-

I,

,,

RA~ ~

0:

"'-\\
~\
~ \1

,

SOLID LINE:
~ 'BLOCKING VOLTAGE
"MAY BE APPLIED
IMMEDIATELY AFTER SURGE

'""'

125
50
75
100
150
MAX. AMBIENT TEMPERATURE ('C)

PA 2.5

\

Surge Current vs. Time

"" '" "-

5

<.l

\\

o

mM -

,,

50

"""'" \

DUTYCYCLE~ r-..

.2

I,
.l' .05

.03-

"'-..

'"

'\\

110
120
130
140
MAX. CASE TEMPERATURE ('C)

100

4.

50

Z

'\

.:: .05

POWER DISSIPATION (W)
.5
.375
.25
.125

I-

.3~

.1

3. Peak Current vs. Ambient Temperature

~

-:1~ ~\

.2

Tc

PA .625

.03

DUTYCYCL~ r----...

"-

TYPICAL
CHARACTERISTICS

,,-\
r--.... "-

.01 ~

r--

ili'"

!;/tJ• ~0
on
'i

-'" .2

10

«
I-

-........

.003

---

20

0

,",
,, ,

en

0

0:
0:

I"

«

-.-

I-

"'

l

2

I-

Z

~

POWER DISSIPATION (W)
2
1.5
1
.5

50

Z

,IvI

I-

Peak Current VS. Case Temperature
PA 2.5

)
ov,~ ~
J:~~<'
// ~

20

~

2.

o

50
25
75
100
125
150
TA m.. - MAX. AMBIENT TEMPERATURE ('C)

PRINTED IN U.S.A.

2N 1875-2N 1880

SCRs
1.25 Amp, Planar
FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This high sensitivity series, featuring very precise control of triggering
characteristics, is particularly useful for timing and time delay circuits, voltage
limit detectors, high gain static switching, logic circuits, pulse and sweep
generators, and related appl ications.

Operating D.C. Current Range: 10-1250mA
Peak Pulse Current: to 30A
Maximum Gate Current to Fire: 20l'A
Firing Voltage: .52±.08V
Voltage Ratings: to 200V
"Turn-on" Time: Typically O.1I'S
Low On Voltage: 2.5V Maximum at 2A

This series is available in a TO-9 package, with all leads isolated from the case,
providing a maximum thermal resistance of 20'C/Watt between junction and case.

ABSOLUTE MAXIMUM RATINGS
2N1875

2N1876

2N1877

2N1878

2N187.

2Nl880

Repetitive Peak Off-State Voltage, VORM
..... l5V.............
... 30V ........ .
60V.
... 100V.................... l50V.................... 200V
Repetitive Peak Reverse Voltage, VRRM .....
...... l5V..................... 30V... .
... 60V.
.... lOOV.................... l50V.................... 200V
D.C. On-State Current, IT
lOO'C Ambient .
. .. .. ... ............
........ 250mA ..
100'C Case .....................................................................................................1.25A '" ....................................................................
....... upto 30A .....................................................................
Repetitive Peak On-State Current, ITRM .. .
Peak One Cycle Surge (Non-Rep.) On-State Current, I TSM
...............................15A...........................................................................
Peak Gate Current, IGM .
.... 250mA ....................................................... .
... 25mA ........................................................................
Average Gate Current, IGIAV)
........................... 5V...........................................................................
Re',;erse Gate Voltage, VGR
.................... .
.................20·C/W......................................................................
Thermal Resistance, Junction to Case, R9J _ C
.. -65'C to +l50·C .............................................................
Operating and Storage Temperature Range

MECHANICAL SPECIFICATIONS
2N1875-2N1880

rc1F l

81

CATHODE

E 0

~-

--- --

-

A

----

--

----

F

C

,,~~'
t /.
\

G

GATE

--

I

~

-IJ-

ANODE

mm.

1M.

A
B

,
0

F
G
H
J

275-335
290-370
200-260
15 MIN

010-030

017:1: ~I

699-775
737-940

508-660
3810 MIN

25-76

432;t g~~

'DO

50.

100
100

254
254

10-9

TO-9

~UNITRDDE

2N187S-2N1880

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)t
Symbol

Test

Subgroup 1 (Visual and Mechanical)
Subgroup 2 (2S0C Tests)
Off-State Current
Reverse Current
Reverse Gate Current
Gate Trigger Current
Gate Trigger Voltage
Anode Trigger Current (Note 2)
On-State Voltage
Holding Current
Subgroup 3 (2S0C Tests)
Turn-on Time
Turn-off Time
Gate Trigger - on Pulse Width
Circuit Commutated Turn-off Time
Subgroup 4 (12S0C Tests)
High Temp. Off-State Current
High Temp. Reverse Current

10RM
IRRM
ISR
1ST
VST
IAT
VT
IH

Typical

Max.

Units

.44
-

O.S
0.5
0.5
5
.52
100
1.8
1.0

5
10
10

,..A

2.S
3

,..A
,..A
V
,..A
V
mA

-

0.1
0.5
O.S
10

-

,..s
,..s
,..s
,..s

~ IT = .SA

5
IS

20
100

,..A
,..A

Vo = Rating, RSK = 1K
VRRM = Rating

0.8
0.3

ton
toll
tpg(on)
tq
10RM
IRRM

Test Conditions

Min.

VORM = Rating, RSK = 1K
VR• M = Rating
VSR = 2V
Vo = SV, Rss = 10K
Vo = SV, Rss = lOOn
Vo=5V
IT = 2A (Pulse Test)
Is = -lS0,..A, VAA = SV

,..A

20
.60

-

Is =20mA
Vo = 30V
IT = .SA, iR = .SA, RSK = 1K

Note: 1. Voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate re·
sistor, or adequate gate bias is used.
2. For a maximum limit of SOpA, use suffix If_I" and drop "2N". Example: 1877-1.
t All values in this table are JEDEC registered.

TRIGGERING AND BIAS STABILIZATION

<

1. Gate Trigger Current

2. Gate Trigger Voltage

80,----,---,--,---,--,--,---r--,

1.4 ,-----,----,----,---,---,--,---,-----,

w~----~~--_+--~--+---~~--~

~

.3

1.2

~----~~--_+---+---+--l--_+-----1

.8

~~--~-l--_+---+---+--l--_+-----1

OJ

~

o

>

~

OJ

C>
C>

~

.6 W.fH.fH.W,Wl'Ht~"""

OJ

~

I

.4

i-----\--_+--+_

~~~~~~~~

>tiJ .2
~OL-----L--J---L---L--~--L-~--~

-65

-25
TJ

-

0

25

50

75

100

125

-25

150

JUNCTION TEMPERATURE (OC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95·1064

TJ

10-10

-

25

50

75

100

125

150

JUNCTION TEMPERATURE (OC)

PRINTED IN U.S.A

SCRs

2N1881-2N1885

1 Amp, Planar
FEATURES

DESCRIPTION

•
•
•
•

These types are useful in AC and DC static switching, proportioning control, relay
and thyratron replacement, DC to AC converters, servo motor driving, protective
circuits, and related applications.
This series is available in a TO-9 package, with all leads isolated from the case,
providing a maximum thermal resistance of 20'C/Watt between junction and case.

One Cycle Surge Current: l5A
Voltage Rati ngs: to 200V
Low "On-Voltage": 2V Max. at lA
Operation: to l50'C Junction
Temperature
• All Leads Isolated for Design
Flexibility

ABSOLUTE MAXIMUM RATINGS
2N1881

2N1882

Repetitive Peak Off-State Voltage, VORM
...... 30V.
Repetitive Peak Reverse Voltage, VRRM .
30V .....
D.C. On-State Current, IT
lOO'C Ambient ....
lOO'C Case
Repetitive Peak On-State Current, ITRM
Peak One Cycle Surge (Non-Rep.) On-State Current, I TSM
Peak Gate Current, IGM .
Average Gate Current IGIAV}
Reverse Gate Voltage, VGR
Thermal Resistance, Junction to Case, Re J-C
Operating and Storage Temperature Range .

2N1884

2N1883

............. lOOV .. ..
. ........... l00V .. .

..... 60V .

GOV ..

150V ... .
.. 150V .. .

2N1885

.. 200V
.. ... 200V

. 250mA ..
.... 1.0A ..
up to 30A

.... J5A ..
.. 250mA.. .. .................... .
25mA ..
3V .............................. .
. 20'C/W .. .
. ... -G5'C to +l50'C

MECHANICAL SPECIFICATIONS
2N1881-2N1885

I c1F

l

D

E

B

1--

-

A

CATHODE
A

--

---

-

--

-

-

--

\.F

TO-9

•
GI~t'\
+--;

I

\

1/

~

-IJ-

GATE

-ANODE

C
D

ins
275-335
290-370

200-260
15 MIN

mm.
699-775
737-940
508-660
3810 MIN

E

010-030

f

017t

G
H
J

200
100
100

~~

10-11

25-76
432:t g~~
50'
254

254

~UNITRODE

2N1881-2N188S
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)t
Test

Subgroup 1 (Visual and Mechanical)
Subgroup 2 (2S'C Tests)
Off-State Current
Reverse Current
Reverse Gate Current
Gate Trigger Current
Gate Trigger Voltage
On-State Voltage
Holding Current
Anode Trigger Current
Subgroup 3 (2S'C Tests)
Turn-on Time
Gate Trigger - on Pulse Width
Turn-off Time
Circuit Commutated Turn-off Time
Subgroup 3 (12S'C Tests)
High Temp. Off-State Current
High Temp. Reverse Current

Symbol

IORM
IRRM
IGR
IGT
VGT
VT
IH
IAT
ton
tpg (on)
toff

to
IORM
IRRM

Min.

Typical

Max.

Units

0.40
-

0.5
0.5
0.5
0.2
1
1.5

10
10
10
2
2

"A
"A
I'A
mA
V
V
mA
mA

2

0.2
1
1
10

-

15
15

200
200

2
0.5

"s
"s
"s
"s
"A
"A

Test Conditions

=
=
=
=
=
=
=
=
=
=
=
=
=
=
IG = 2OmA, IT =O.SA, Vo = 30V
IG =20mA, IT = O.SA, Vo = 30V
IT = lA, IR = IA, RGK = IK
IT = lA, IR = lA, RGK = IK
RGK = 1K, VORM = Rating
RGK =1K, VRRM = Rating

RGK 1K, VORM
Rating
RGK 1K, VRRM
RatingVGRM
2V
RGS
10K, Vo SV
RGS
loon, Vo
SV
IT
1A (pulse test)
IG
-lS0"A, Vo
SV
RGS 10K, Vo SV

t All values in this table are JEDEC registered.
Note: Voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate reSistor, or adequate gate bias is used.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10-12

PRINTED IN U.S.A.

SCRs

2N2322-2N2329
2N2323A-2N2328A
2N2323S-2N2329S, J, JTX, JTXV
2N2323AS-2N2328AS, J, JTX, JTXV

1.6 Amp, Planar
FEATURES

DESCRIPTION

• Available as JAN, JANTX, & JANTXV
Types
• JAN Types Available in TO·5
• 1.6A D.C. Current
• Peak Currents: to 30A
• Voltage Ratings: to 400V
• 20J1A Max. Trigger Current ("A" types)
• O.6V Max. Trigger Voltage ("A" types)

These are premium thyristor switches intended for use in high performance
industrial, military and space applications requiring a high degree of reliability
assurance. This series is useful in a wide variety of applications including timing
and programming circuits, protective and warning circuits, driving relays,
driving indicator lamps, encoding and decoding circuits, replacing relays,
thyratrons, and magamps, servo motor control, pulse generation, plus many others.
The high surge current rating U5A -1 cycle) makes this series particularly
useful for squib firing.
The following JAN, JANTX and JANTXV types are specified under Mil-S-195001276A
and are included in Mil-STD-70l as recommended types for military usage:
2N2323
JAN2N2323S
JANTX2N2323S
JANTlIV2N2323S
2N2323A
JAN2N2323AS
JANTX2N2323AS
JANTXV2N2323AS
50V

ABSOLUTE MAXIMUM RATINGS

2N2322

2N2324
JAN2N2324S
JANTX2N2324S
JANTlIV2N2324S
2N2324A
JAN2N2324AS
JANTX2N2324AS
JANTlIV2N2324AS
. . lOOV

Repetitive Peak Off-State Voltage, VDRM 25V.
Repetitive Peak Reverse
Voltage, VRRM
50V .............. lOOV .
25V ...
Non-Repetitive Peak Reverse
Voltage, VRSM « 5ms)
.. '" ......... 40V ......... 75V
........... lSOV
D.C. On-State Current, IT
80"C Ambient
85"C Case
One Cycle Surge (Non-Rep.) On-State Current, ITSM .
Repetitive Peak On-State Current, ITM
Gate Power Dissipation, PGM .
Gate Power Dissipation, PGM(AV) .
Peak Gate Current, IGM
Peak Gate Voltage, Forward and Reverse .
Reverse Gate Current, IGR
Storage Temperature Range .
Operating Temperature Range

2N2326
JAN2N2326S
JANTX2N2326S
JANTXV2N2326S
2N2326A
2N2325
JAN2N2326AS
2N2325A JANTX2N2326AS
JANTlIV2N2326AS
l50V .
200V ..
l50V ..

2N2328
JAN2N2328S
JANTX2N2328S
JANTlIV2N2328S
2N2328A
!N2321
2N2327
JAN2N2328AS
JAN2N23295
2N2327A JANTX2N2328AS
JANTX2N23295
JANTlIV2N2328AS JANTlIV2N2329S
250V ........ 300V ................. 400V

.200V ......... 250V ........... 300V ................ 400V

225V ........ 300V .

.350V ...

. 400V ............... 500V

.300mA .. .
...... 1.6A ... .
..15A ..
..... 30A ..
. .. O.lW ...
O.OlW ..
lOOmA ....
.6V... .
3mA ... ..
-65"C to +150"C
-65"C to +125"C ................................. ..

MECHANICAL SPECIFICATIONS
2N2322·2N2329
2N2323S·2N2328S, J, JTX, JTXV
2N2323A·2N2328A 2N2323AS·2N2328AS, J, JTX, JTXV

[c~

B

E

l

~

INCHES

.-.

-----

-

-

---

GATE

-.....::c..,...,-~

AJ

F

--I

L

ANODE

A .315-.335
B .350-.370
C .240-.260
D .010-.030
E .5 MIN
F .016-.019
G .190-.210
H .085-.105
J .028-.034
K .029-.045
L .100

10-13

TO-205AD (TO·39)

MILLIMETERS
8.00-8.51
8.89-9.39
6.35-6.60
0.25-0.76
12.70 MIN
.406-.483
4.83-5.33
2.16-2.67
.711-.864
.737-1.14
2.54

~UNITRDDE

2N2322·2N2329
2N2323S·2N2328S, J, JTX, JTXV
2N2323A·2N2328A 2N2323AS·2N2328AS, J, JTX, JTXV

ELECTRICAL SPECIFICATIONS
Symbol

Test

Visual and Mechanical
25'C
Off-State Current
Reverse Current
Gate Trigger Current
"An Types
non-"An Types
Gate Trigger Voltage
"An Types
non-"An Types
On-State Voltage
Holding Current
Reverse Gate Current
Delay Time
Rise Time
Circuit Commutated Turn-Off Time
l25'C
Off-State Current
Reverse Current
Gate Trigger Voltage
Holding Current
"An Types
non-"An Types
Off-State Voltage - Critical Rate of Rise
"An Types
non-"An Types
-65'C
Off-State Current
Reverse Current
Gate Trigger Current
"AU Types
non-HAn Types
Gate Trigger Voltage
"An Types
non-"An Types
Holding Current

Min.

Typical

Max.

Test Conditions

Units

MIL-STD-750, Method 2071

-

0.1
0.1

10
10

"A
p.A

VORM = Rating, RGK = lK (2K for "An Types)
VRRM = Rating, RGK = lK (2K for "An Types)

-

2
50

20
200

"A
"A

Vo = 6V, RL = lOOn
Vo = 6V, RL = lOon

0.35
0.35

0.52
0.55
2.0
0.3
1
0.6
0.4
20

0.60
O.SO
2.2
2.0
200·

V
V
V
rnA
"A

Vo = 6V, RGK = 2K, RL = lOOn
Vo = 6V, RGK = lK, RL = lOan
ITM = 4A (pulse test)
Vo = 6V, RGK = lK (2K for "An Types)
VGR = 6V
IG = lamA, IT = lA, Vo = 30V
IG = lOrnA, IT = lA, Vo = 30V
IT = lA, IR = lA, RGK = lK

-

100
100

0.1

1
1
0.3

"A
p.A
V

VORM = Rating, RGK = lK (2K for "An Types)
VRRM = Rating, RGK = lK (2K for "An Types)
Vo = Rated VO' RGK = lK (2K for "An Types)

O.lt
0.15t

-

-

IORM
IRRM
IGT

-

-

VGT

-

VTM
IH
IGR
td

tr
tq

-

IORM
IRRM
VGT
IH
dvldt

-

0.7·
LS·
IORM
IRRM
IGT
VGT

IH

"S
"S
"S

rnA
rnA

Vo = 6V, RGK = 2K
Vo = 6V, RGK = lK

VII'S
V/"s

VO = Rating, RGK = 2K
Vo = Rating, RGK - lK

-

.05
.05

5.0·
5.0·

"A
"A

VORM = Rating, RGK = lK (2K for "An Types)
VRRM = Rating, RGK = lK (2K for "An Types)

-

-

50
100

75
350

"A
"A

Vo = 6V, RL = lOOn
Vo = 6V, RL = lOOn

-

0.7

-

0.75

O.S·
0.9t
La
3.0t

V
V
V
rnA

Vo =
Vo =
Vo =
Vo

-

-

-

6V, RGK =
6V, RGK =
6V, RGK
6V, RGK

=

2K, RL = lOOn
2K, RL = lOOn
lK, RL
lOOn
lK (2K for "AU Types)

=
=

=

• JAN and JANTX Types only.
t Industrial Types only.

JAN and JANTX Acceptance Tests
100% Screening TX-Types

Group B Tests

Group C Tests

High Temperature Storage
Temperature Cycling
Constant Acceleration
Fine & Gross Hermetic Seal
Electrical Test
Burn-in
Electrical Test

Subgroup 1- Reverse Gate Current
Surge Current
Non-Repetitive Reverse Voltage

Subgroup 1- Physical Dimensions

Subgroup 2 - Low Temp.
Low Temp.
Low Temp.
Low Temp.

Reverse Blocking Current
Forward Blocking Current
Gate Trigger Voltage
Gate Trigger Current

Subgroup 3- Temperature Cycling
Thermal Shock
Moisture Resistance
Solderability

Subgroup 2 - Shock
Constant Acceleration
Vibration, Variable Frequency
Subgroup 3 - Barometric Pressure, Reduced
Subgroup 4 - Salt Atmosphere
Subgroup 5 - Terminal Strength
Subgroup 6 -Intermittent Operating Life Test

Subgroup 4 - Blocking Life Test

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

10-14

PRINTED IN U.S.A.

2N2322·2N2329
2N2323S·2N2328S, J, JTX, JTXV
2N2323A·2N2328A 2N2323AS·2N2328AS, J, JlX, JTXV

Gate Trigger Current

Gate Trigger Voltage

...~

.8

C!l

~

0

>

...

.6

II:

C!l
C!l

a:I-

...

.4

!C
C!l
I

:;- .2
>
-400

L -____L-__L-~L__J__~___L__~

~5

TJ

-25
0
25
50
75
100
- JUNCTION TEMPERATURE (·C)

125

-25
o 25 50 75 100
T J -JUNCTION TEMPERATURE (·C)

Average Current vs. Case Temperature

Holding Current

PD -

POWER DISSIPATION (W)

20
10

r-------

= 2K -

g

I

Z

...

I

II:
II:

I

II:
II:

::::>

I-

r--

Z

2

'"
C!l
Z

...

r--

'"...

I-

;!:

...
...

..

.5

C!l

I

I""

An~le = 180·C

12O!C
•8

'60'~

II:

_z

:t

•2

.1

I

-25
0
25
50
75
100
TJ - JUNCTION TEMPERATURE (·C)

PD -

...........

......

.4

125

~

I""

I"'-... ~

r-.......

...........

"","";::::

~ ........
...........

o75

-

""

~~

--~

80

85

90

95

m"- MAXIMUM

Tc

Average Current

--.......

J

L -__~L-~__- L__~__L-__ L-~

~5

---

CO~duction _I""

1.2

II}
Z
0

..J

:I:

D:C.
1.6

::::>

C

o

---,-

-- -

"A" Types

l

I-

.5

1.5
RGK

125

vs. Ambient Temperature

100 105 110 115 120 125
CASE TEMPERATURE ('C)

Surge Current

POWER DISSIPATION (W)

g
I-

...
Z

II:
II:

-- - -

.8

::::>

'"...

I-

;!:

DC

\.

.6

'\

IJ)

z0
...C!l
...>

.4

I

.2

..
..

""""

120'C

II:

60'C

~
..F

..............
...............

TA=~

2

o

o

o
TA

m.. -

MAXIMUM AMBIENT TEMPERATURE (·C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10·15

Tc = 85'C

1

2

5
10
20
CYCLES AT 60Hz

I
50

100

PRINTED IN U.S.A.

JAN & JANTX 2N3027 -2N3032

SCRs
0.5 Amp, Planar
FEATURES

DESCRIPTION

• JAN and JANTX Types Available
• Fully Characterized for "Worst Case" Design
• Passivated Planar Construction for Maximum
Reliabilityand Parameter Uniformity
• Low On-State Voltage and Fast Switching
at High Current Levels
• Typical Turn-On Time: 0.121's
• Typical Recovery Time: O.7I'S
• Pulse Currents: to 30A

The 2N3027 series of planar SCRs (controlled switches) are intended for use in
military and space applications requiring a high degree of reliability. They offer a
unique combination of extremely fast switching, precise triggering, high pulse
power, small size, intrinsic parameter stability, and high radiation tolerance.
The JAN and JANTX types are specified under MIL-S-19500/4l9, and are included
in MIL-STD-70l as recommended types for military usage.

ABSOLUTE MAXIMUM RATINGS
JAN & JANTX 2N3G27
JAN & JANTX 2N3030

JAN & JANTX 2N3G28
JAN & JANTX 2N3031

JAN & JANTX 2N3029
JAN & JANTX 2N3032

Repetitive Peak Off-State Voltage, VDRM
....................... 30V.
........... GOV ..... .
.......... lOOV
Repetitive Peak Reverse Voltage, VRRM ..
..... 30V........... .
................. 100V
. ...... GOV ..
D.C. On-State Current, IT
lOO'C Case ...
............................ .
......... 500mA ... .
... 2SOmA
75'C Ambient ................... .
Repetitive Peak On-State Current, ITRM
.............. 30A .................................... .
Surge (Non-Rep.) On-State Current, I TSM
....... 5A ...... .
SOms
Sms
..... SA .. .
Peak Gate Current, ISM
...........................
......................... . .. ...... 2SOmA.
Average Gate Current, IS(Avl
...... . ...........
............................................. .
. ... 25mA
Reverse Gate Voltage ..... ..... ... ..... .... .
...................................... .
.......... 5V ..
Reverse Gate Current
...................... .
.........3mA............
......................... .
. ....................................... .
Storage Temperature Range ..
... -65'C to +200'C .. .
.................... .
Operating Temperature Range.
.......................... .
-65'C to +150'C ........................ .
Note: Blocking voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an
appropriate resistor, or adequate gate bias is used. (See section on bias stabilization.)

MECHANICAL SPECIFICATIONS
JAN & JANTX 2N3027-2N3032

GATE

B
ANODE

INCHES
.178-.195DIA.
.170-.210
.5 MIN.

209-.230 OIA .
.017 ±
G
H
J

:~~ 8:~'

020 MAX
lOOt 010 DIA.
.041:1:.005
.028- 048

10-16

TO-18

e

MILLIMETERS
4.52-4.95 DIA.
4.31-5.33
12.70 MIN.
531-584 DIA.
.432'

:g~~

.508 MAX.
2.54:1:.254 DIA .
1.041:.127
.711-122

~UNITRDDE

JAN & JANTX 2N3027-2N3032

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
2N3027 - 2N3028 - 2N3029
Symbol

Parameter

SUBGROUP 1
Visual and Mechanical
SUBGROUP 2 (25°C Tests)
Off-State Current
Reverse Current
Reverse Gate Voltage
Gate Trigger Current
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (25°C Tests)
Off-State Voltage - Critical Rate of Rise
Gate Trigger-on Pulse Width
Delay Time
Rise Time
Circuit Commutated Turn·off Time
SUBGROUP 4 (150°C Tests)
High Temp. Off-State Current
High Temp. Reverse Current

High Temp. Gate Trigger Voltage
High Temp. Holding Current
SUBGROUP 5 ( 65°C Tests)
Low Temp. Gate Trigger Voltage
Low Temp. Gate Trigger Current
Low Temp. Holding Current

Min.

Typical

Max.

-

-

-

-

-

IORM

'RRM

5
-5
.40
0.8
0.3

.002
.002
8
8
.55
1.2
0.7

0.1
0.1

VG,
IGT
VGT
VT
IH

pA
pA
V
pA
V
V
mA

dvJdt
tpg fonl

60
.07
.08
.04
0.7

30

-

td
t,
tq

-

IORM

-

-

200
.80
1.5
5.0

-

Test Conditions

Units

MIL-STD-750
Method 2071
RGK

vipS

0.2

pS

-

pS

2.0

pS

20
50
0.6
1.0

pA
pA
V
mA

pS

'RRM

-

VGT
IH

.10
.05

2
20
.15
.20

VGT
IGT
IH

0.6
0
0.5

0.75
150
3.5

1.1
1.2
10

V
mA
mA

= lK, VORM = Rating

=
=
=
=
=
=
=
=
=
=
RGK = lK, Vo = 30V
IG = 10mA, IT = lA, VOM = 30V
IG = 10mA, IT = lA, Vo = 30V
IG = 10mA, IT = lA, Vo = 30V
IT = lA, i, = lA, RGK = lK
RGK = lK, VO'M = Rating
RGK = lK, V
= Rating
RGS = 100!!, Vo = 5V
RGK = lK, Vo =5V
RGS = lOO!!, Vo = 5V
RGS = 10K, Vo = 5V
RGK = lK, Vo = 5V
RGK
lK, VRRM
Rating
IG'
O.lmA
RGS
10K, Vo
5V
RGS
lOO!!, Vo
5V
iT
lA (pulse test)
RGK
lK, Vo 5V

RRM

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
2N3030 - 2N3031 - 2N3032
Parameter

SUBGROUP 1
Visual and Mechanical
SUBGROUP 2 (25°C Tests)
Off-State Current
Reverse Current
Reverse Gate Voltage
Gate Trigger Current
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (25°C Tests)
Off-State Voltage - Critical Rate of Rise
Gate Trigger-on Pulse Width
Delay Time
Rise Time
Circuit Commutated Turn-off Time
SUBGROUP 4 (150°C Tests)
High Temp. Off-State Current

Symbol

Min.

Typical

Max.

Units

-

-

-

-

-

MIL-STD-75O
Method 2071

-

.002
.002
8

0.1
0.1

pA
pA
V
pA
V
V
mA

RGK
lK, VO'M
Rating
RGK
lK, VRRM
Rating
IG'
O.lmA
RGS
10K, Vo
5V
RGS
100!!, Vo
5V
iT
lA (pulse test)
RGK
lK, Vo
5V

IDRM
IRRM

-

VG,
IGT
VGT
VT
IH

5
-5
0.44
0.8
0.3

dvJdt
tpg (on)
td
t,
tq

-

30

1.2
1.0
60
.05
0.1
.05
0.7

-

-

pS

2.0

pS

=
=
=
=
=
=
=
=
=
=
=
=
RGK = lK, Vo = 30V
IG = 10mA, IT = lA, Vo = 30V
IG = 10mA, IT = lA, Vo = 30V
IG = 10mA, IT = lA, Vo = JOV
IT = lA, i, = lA, RGK = lK

RGK
RGS
RGK

20
0.6
1.5
4.0

0.1

-

vipS
pS
pS

VGT
IH

.10
.05

2
20
.15
.JO

20
50
0.4
2.0

pA
pA
V
mA

VGT
IGT
IH

0.44
0
0.5

0.8
0.4
5.0

0.95
0.5

V
mA
mA

IORM

High Temp. Reverse Current

IRRM

High Temp. Gate Trigger Voltage
High Temp. Holding Current
SUBGROUP 5 (_65°C Tests)
Low Temp. Gate Trigger Voltage
Low Temp. Gate Trigger Current
Low Temp. Holding Current

Test Conditions

8

RGK

= lK, VORM = Rating

= lK, V"M = Rating
= lOO!!, Vo = 5V
= lK, Vo = 5V
RGS = 100!!, Vo = 5V
RGS = 10K, Vo = 5V
RGK = lK, Vo = 5V

High Reliability Processing
The 2N3027-2N3032 series provides a complete range of high reliability processing
from the standard devices that undergo extensive electrical testing, through JAN
and JANTX levels. 100% processing, Group B, and Group C tests for JAN and JANTX
devices is shown below. For further details, see MIL-S-19500/4l9(EL).
100% Screening TX-Types
High Temperature Storage
Temperature Cycling
Constant Acceleration

Fine & Gross Hermetic Seal
Electrical Test

Burn-in
Electrical Test

Group B Tests
Subgroup 1- Physical Dimensions
Subgroup 2 - Solderability
Temperature Cycling
Thermal Shock
Constant Acceleration
Moisture Resistance
Subgroup 3 - Surge Current
Subgroup 4 - Blocking Life Test
Subgroup 5 - Storage Life Test
Subgroup 6 - Operating Life Test

UN/TRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10-17

Group C Tests
Subgroup 1- Shock
Vibration, Variable Frequency

Subgroup 2 - Salt Atmosphere
Subgroup 3 - Terminal Strength
Subgroup 4- High Temp. Anode Voltage - Critical
rate or rise

Subgroup 5- Storage Life Test
Subgroup 6 - Operating Life Test

PRINTED IN U.S.A.

JAN & JANTX 2N3027-2N3032
TYPICAL CHARACTERISTICS

2N3027 - 2N3028 - 2N3029
Gate Trigger Current
1400 ,----,----.--,--.---,---,----,------,
~ 1200

k-----j--f---f--+----j---I---f---I

l!;; 100e

F*----j--f---f--+----j---I---f---I

.:;
uJ

Gate Trigger Voltage

2

1.4 ,----,---r-,--,--,-----,----,----,

'"'"

::J 800 f7L-A----j--i--+-ALL UNITS JIRE

u

'"
~
"

600 iT-lH'-kt--f---f--+----j---I---f---I

"'

~ 400 ~~~~~-~-+--~-+-~~

:t

'I

..§

200

Hcr-hI'-T-ftH")-.-=-+-,----I:---+--t---I

0

~~~L4~~~~~

"

>

.2
NO UNITS FIRE

a

-200 L -_ _~~_--'-_-'-_L------L_--'----.J
-65
-25
25
50
75 100 125 150
TJ

3

-

u;

i

Min • .critical dv/dt (25°C - R Bias)

200

""-

>-

'">=

u

20
10

"'u

TJ

=

25°C

:

1K

10K

r-....

RGK - 30K

\ "'GV,

::J

::;:

~

::;:

1

1

'"-'

20

'"u>=

1"
\..
\

10

u
::;:

.........

::J

\

~

z

i

I

.5 -DASH LINES SHOW ;001 ~fd CAPACITORADDlED BETfEEN IGATE
CATHOD~
.2
1
2
5
10
20
50
100
200

.2

Max. Holding Current (Resistor Bias)

...
'"'"
"o

uJ

20

~

10

...z

::J
U

-

-'

o

:r
X

I
_I

---

~

Z

~

.§.

"-

I

,

300P.
K

3K

I

.... 11(+.:,0!!.,1

-

,

ft~110K- ~1(+.001
--i- -

1

10
20
50
100
VD-APPLIED OFF-STATE VOLTAGE (V)

6

Min. Holding Current (Resistor Bias)

200

f=:::::

~
...........

'"u
"0z

'"

:r

o\'''<~

.2

~

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 ° TEL. (617) 861-6540
TWX (710) 326-6509 ° TELEX 95-1064

.5

::;:

I
_I

.2

Z

.1

i
-25
a 25 50 75 100 125
TJ - JUNCTION TEMPERATURE (oC)

~

-'
0

.1
-65

10

uJ

.5

.05

20

'"::J

X
~

-fJ = 12~oC

50

50
~

.§.
z

150

DASH LINES SHOW .001 ~fd CAPACITOR
ADDED BETWEEN GATE AND CATHODE

VD-APPLIED OFF-STATE VOLTAGE (V)

5

125

BIASED AS SHOWN IN FIG. 1
.5

tND

100

:i

\

"'

~

-BIAlED AS SHOWN IN FIG. 1
1

50

>-

'-

~

'0

75

l

1\

~ 100

't.'f-.

\

::;:

50

500

z:

I

3K

25

JUNCTION TEMPERATURE (oC)

-

Min. Critical dv/dt (125°C - R Bias)

200

\

I

I'...

'C

4

1\ ~
+
~\ §

300P.

I,

100

'0 50
-'

TJ

JUNCTION TEMPERATURE (oC)

500

-25

-65

~ ~ 8:::--

---

.05

-65

150

10-18

R

-.:. Gk _~

100 _

r-<:::~[!
r-- r---.r-...
t::::: r--....

c-

1;00

~, 3~""""" ~
Gkl"'101~ "r-.....

-25
25
50
75
100 125
T J - JUNCTION TEMPERATURE (OC)

150

PRINTED IN U.S.A.

JAN & JANTX 2N3027-2N3032
TYPICAL CHARACTERISTICS

2N3030 - 2N3031 - 2N3032
Gate Trigger Current
600
;;(

.=.

>- 500
w
~ 400

z

:::>
()

'"

w 300

"S?

200

>«

100

'"w>-

"I

-"

r-+-A

I

i

~
~

Gate Trigger Voltage

2

~

i

1.4

,-----y-,--,-----y-,--r-----y--,

1.2

r__-~r__--t---t--

w
«

"~

ALL UN1ITS FIRE-L

~

ffi

.8

V7~~r__--t---t--~-r__~-_r~

"S?

%

@ ~ t;;.
a

w
>-

MAX.

<3

IGr ~IN.

.4 r__---'f----t--

I

--<.

>'0 .2

-100
NO UNITS FIRE

I

-200
-65
Tj

I

[

-25
25
50
75 100 125
JUNCTION TEMPERATURE ("C)

150

-65

3 Min. Critical dv/dt (25"C - R Bias)
500

\ \ "'-... 300!)

~ 100

~

50

""

20

~>

...J

1l
;:::
0:

u
:;;

10

Tj

5

\

:::>

:;;

z

BIASED AS

:;;

1"'-..

1K

I'..

3K_

~

t--l* .... -

f'--I'....
1

"

10K

\';.

,
30K

RGK -

'.,

IN FIG. 1

1

li

200

50

>=
0:
()
:;;
::>
:;;
Z

10

1\ "\
\.,
\

20

~

1

20

50

100

1

200

6

50

10

20

50

100

200

APPLIED OFF-STATE VOLTAGE (V)

Min. Holding Current (Resistor Bias)

;;(

.s>-

'r-- t -

20

w 10

'"'"
"zi5

=-

:::>

F:::: ::::::: ~~O!!
~ ::::::: ~ 1--f?

()

20

z

10

'"'":::>
"zi5

..............

...J

0

.5

()

-------

r--.... 1'-,
..........

J:

-'

r--

50

;;(

I

lOK
- 10K - " -- - ;-;... .001

1

R

t"'---GK-

5
Vo -

APPLIED OFF-STATE VOLTAGE (V)

Max. Holding Current (Resistor Bias)

X
«
:;;

I

r--

.2
10
Vo -

zw

~K

'OOl

DASH LINES SHOW .001 ~fd CAPACITOR
ADDED BETWEEN GATE AND CATHODE

ADpED BETWEEN GATE AND CATHODE

1

.s>-

11 ',lK-;..

BIASED AS SHOWN IN FIG. 1

.5

.2

1\

1K

"-

:;;

.5 f-DASH LINES SHOW .001 ~fd CAPACITOR-

300!)

= 125"C

Tj

P
I,

.\

100

"">""...J

«
u

-\-

SHOW~

1

-;;;

150

Min. Critical dv/dt (125"C - R Bias)

500

I \

\

= 25"C

4

l:~
118...

\\

200

-25
25
50
75
100 125
T j - JUNCTION TEMPERATURE ("C)

............

---~
-~
JK

...J

J:

Z

.5

I
-'

.2

:E

.1

:E

f?

"<~

.2

Z

.05
-65

-25
Tj -

25
50
75
100 125
JUNCTION TEMPERATURE ("C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

:::::-

0

.05
-65

150

10-19

--,---

:--.:::: :::::::: E==::: ::::r--: 0~OOI! r--r-~
t:---... ~~~ b"
f?

---hi--

G" ':::-...

f

:.JR""-

lOK...............

~
~

...........

........

~

t:::::."

-25
25
50
75
100 125
T j - JUNCTION TEMPERATURE ("C)

150

PRINTED IN U.S.A,

JAN & JANTX 2N3027-2N3032
CURRENT RATINGS
C2

50

~ 10

I

W

'"'"

::J
U
W

I

I-

«

I

I-

'"0Z

/I

II
.05

.1

.2
Vj -

2

7{

'"

.001

20

-:oti3-

~ ..........

«

I-

'"Z
0

-

2

«
w

w
>

TypicalCharacteristics

w
.2
w

on

0-

II

'"I

.......

........

.......

............

Cfe

.1

~

>

1-"

.5

10

20

J.

50

.05
90

ON-STATE VOLTAGE (V)

120

110

100

~\

~ ............

1':3~i;-;-.....
1

.5

;::
;::

--.....

~

'"
-r-:-r- 1'\\

10

w

'" i

1--' 1-'"

.05

I-

p

~ u,

~

.1

W

'"'"
u

::J

0-

~~

..: .2

~

A

Z

,

I

.5

I

~ 50

W

+
~l+-

I-

POWER DISSIPATION (W)

5

I-

oV

I

Z

PA -

~
%~J

R=r

20

Peak Current vs. Case Temperature

Forward on Current vs. Voltage

Cl

130

~\

~\

~\

\

"'-\

140

150

Tc m,,-MAX. CASE TEMPERATURE (OC)

C3 Peak Current vs. Ambient Temperature
TO-18 Ratings (see note)
PA -

~

.3

50

I-

Z

w

'"'"

20

--

u 10
w

S

2

'"

«
w

--

0-

w

.5
>
;::
;::

w
w

0-

'"I
J

.2
.1
.05

o

25

TA m" -

C5

50

.5

DC

'"'"

u

~

w

l-

i:"

.2

ci
>
«
I

.1

''""

........

()

w

N
100

75

z

"'
"'\

'0Z"

.5

2

~

~

"'"

'\\

.2

::J

'"I

,,\

J

150

.1

~

DAS~ LlNJ BLOdKINGiVOLTAGE MA~~

NOT BE SUSTAINED FOR 0.1
SECONDS AFTER SURGE

.05 10_,

11l"4 10-'

10-'

10-1

1

10

10'

10'

PA -

~

.4

POWER DISSIPATION (W)

.3

.1

.2

~
~ .3 ~==~--~~~~-b----+-----~--~

w

'"'"

::J
U

S
w

z
o

~

J

~

130

I

~

o

120

140

"

.1

~---t-----t-----+----+--~~------i
75

150

MAX. CASE TEMPERATURE (~C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

.2 r---~-----t--~~~~+-----~--~

"I

'-\ ~

0

110

"-

r---.... ....

C6 Average Current vs. Ambient Temperature
TO-18 Ratings (see note)

I'-..... r-0..'\
1'--.'" ~

100

,

SOLID LINE RAT;;;:'
BLOCKING VOLTAGE ~
MAY BE APPLIED AFTER
SUR1E
I
I
I

SURGE DURATION (Sec)

"'-

Tc m" -

"-

w

POWER DISSIPATION (W)
A

=0

"'-,
"-

a:w

~

90

IF BEFORE SURGE

"I

0

\

125

10

,

i:"

......;.0:1

~

~

l-

.0./

!?!:..tYCYCl

20

::J

-...:.,00:1

3¢~" " ."\

.3

'"Z

w

r--y;;- , ' \

.4

zw

::J

I-

Z

'00./

Average Current vs. Case Temperature
PA -

~

~ 50

MAX. AMBIENT TEMPERATURE (OC)

5

I-

r---

.1

r--- ..........."' ~
r--- ....... ",\
r--.
-<::: ~
l -t--

::J

'"z
0

.2

Surge Current vs. Time

C4

POWER DISSIPATION (W)

.4

TA ... -

10-20

100

125

150

MAX. AMBIENT TEMPERATURE (OC)

PRINTED IN U.S.A.

JAN & JANTX 2N3027-2N3032
SWITCHING 5PEEDS
51 Maximum Delay Time td' Rise Time t,.
and Gate Trigger Pulse Width tpg (on)
10

I

~

.::,
OJ

:;;

;::

.5

TJ
2JoC_
I, = lA

't'\,.

I

~

!

I

I

I

~

I~
-It.

~
~

.01 .02

.2

~
MAX t

.1

1""-'

• ·9

.05 .1.2
.5
5 10
16 - PULSE GATE CURRENT (rnA)

,-

~-

~25ob_

.2

I
MAX. teg (lG

.05

1-

~

::l

o

5
ON-STATE CURRENT (A)

I

~~

W

20
10
~

.::,
OJ

;::

l~oc,i,;0.

't -

~_o
oC
2S

-

,

.--r,-'"

-25
25
50
75
100 125
TJ - JUNCTION TEMPERATURE (oC)

150

-:- - IF

l---

---

Rr=lj-

.1

.5

.2

'T UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

::-I--:--

2SoC , " -

.2

.1

< 10K i, -If>,

.2

- ~

.5

GK

0

.5

I

-

L

~V

Maximum Circuit Commutated
Turn-off Ti me tq

~

:;;

R

-65

100
50

k'"

.1

W

55

........- V

S

~
U

5

'T -

. _ 0
10K ,,-

I-:::: ~ I-'"
~ f..-- f.-- ~
GK -

....

'

2

R

<.J

I

.1

/

lK

:;;
:;;

..-

10mA)

.02

.01

10

S

MAX. t

I

I

50 f---IF ilA

OJ

-

150

Maximum Circuit Commutated
Turn-off Time tq

::l

r--MAX. td (lG = 10mA)

.1

-25
25
50
75
100 125
T J - JUNCTION TEMPERATURE (oC)

.::,

=

MAX. teg (IG - 0.5mA)

~

;::

MAX. td (I G - 10mA)

Z 20

0.5mA~

o,sr

(lG - 10mA)

a:

_ J

'G

1

"' 100

......o

r--

I

54

1

MAX. td (16

.5

I .

O.sJA)-

(

MAX. t,

.01
--65

20

rI

MAX t

.02

T;

.5
OJ
:;;

MAX. td (lG

.05

53 Maximum Delay Time td' Rise Time t,.
and Gate Trigger Pulse Width tpg (on)
10

i
-L

OJ

I

.01

i

.5

;::

,

.02

I

:;;

v

'\~

MAX.t,

.05

J

.r

"I

.1

1:=11-

b-

i

.2

10

L

I\.

I

52 Maximum Delay Time td' Rise Time t,.
and Gate Trigger Pulse Width tpg (on)

10

20

ON-STATE CURRENT (A)

10-21

PRINTED IN U.S.A.

SCRs

2N5724-2N5728

1.6 Amp, Planar

FEATURES

DESCRIPTION

• Maximum Gate Trigger Current: 20l'A
• Closely Controlled Gate Trigger Voltage:
.44 to .6V
• Operating Current Range: 2mA to l.6A
• Voltage Ratings: to 400V
• Low On-State Voltage
• Specified for dv/dt and Switching Time

These devices are intended for general purpose usage in Military/aerospace or severe
industrial environments. Major design parameters are specified at the temperature
extremes, thus permitting worst case design on the basis of guaranteed values .
These devices undergo 100% preconditioning, which includes high temperature
storage and temperature cycling followed by a fine leak test as a regular part of the
manufacturing procedure.
The high voltage types of the 2NS724 series are especially useful as pulse modulator
switches in low to medium power pulse modulator applications. Specific parameters
such as rise time, delay time, holding current, and recovery time can be selected
for optimum performance in a pulse modulator circuit.

ABSOLUTE MAXIMUM RATINGS
2N5724

2N5725

Repetitive Peak Off-State Voltage, VDRM .
. 60V
Repetitive Peak Reverse Voltage, VRRM
. 60V.
Non-Repetitive Peak Off-State Voltage, VDSM .
D.C. On-State Current, 'T
7S'C Ambient
8S'C Case
Repetitive Peak On-State Current, 'TRM
Peak One Cycle Surge (Non-Rep.) On-State Current, ' TSM
Peak Gate Current, IGM .
Average Gate Current, IG(Av)
Reverse Gate Current, IGR . .
Reverse Gate Voltage, VGR .
Operating and Storage Temperature Range

2N5726

... 100V................. 200V.
... 100V ...
....... 200V ...
. SOOV.. "

2N5727

.. 300V ....
............ 300V.

2N5728

.. .. 400V
..... 400V

..... 4S0mA
...... l.6A ..
up to 30A ..
lSA ..
. 2S0mA.

25mA ..
..3mA
6V...
-6S'C to +lS0'C ..

MECHANICAL SPECIFICATIONS
2N5724-2N5728

ins.
305-335
335-370
240-260
010- 030
5MtN
017±

gg~

200
100
031:1:003

029-045

100

10-22

TO-20SAD (TO-39)

775-851
851-940

635-660
25-76
1270 MIN

432 ± g~§

508
254
79±O8

74-114

2.54

[1JJ UNITRODE

2NS724-2NS72'B
ELECTRICAL SPECIFICATIONS
Test

SUBGROUP 1
Visual and Mechanical
SUBGROUP 2 (2S'C TESTS)
Off-State Current
Reverse Current
Reverse Gate Voltage
Gate Trigger Current
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (2S'C TESTS)
Off-State Voltage - Critical Rate of Rise
Gate Trigger-on Pulse Width
Delay Time
Rise Time
Circuit Commutated Turn-off Time
2NS724, 2NS72S, 2NS726,
2NS727,2N5728
SUBGROUP 4 (1S0'C TESTS)
High Temp. Off-State Current
High Temp. Reverse Current
High Temp. Gate Trigger Voltage
High Temp. Holding Current
SUBGROUP 5 (-6S'C TESTS)
Low Temp. Gate Trigger Voltage
Low Temp. Gate Trigger Current
Low Temp. Holding Current

Symbol

Min.

Typical

-

-

-

-

-

IORM
IRRM
VGR
IGT
VGT
VT
IH

-

0.1
0.1

0.3

.OS
.OS
8
2
O.S
2.3
O.B

20
0.6
2.S
2.0

I'A
I'A
V
I'A
V
V
rnA

100

150

S

0.44
-

dvldt
tpg (on)
td
tr

-

tq

-

IORM
IRRM
VGT
IH

0.10
0.10

-

VGT
IGT
IH

Max.

-

=
=
=
=
=
=
=
=
=
=
=
=
RGK = lK, Vo = 30V
IG = lOrnA, IT = lA, Vo = 30V
IG = lOrnA, IT = lA, Vo = 30V
IG = lOrnA, IT = lA, Vo = 30V
RGK
lK, VORM
Rating
RGK
lK, VRRM
Rating
IGR
O.lmA
RGS
10K, Vo
SV
RGS
100f!, Vo
SV
IT
SA (pulse test)
RGK
lK, Vo
SV

0.1
0.1
0.3

0.5

-

viI's
I'S
I'S

-

,,5

IS
30

30
SO

"s
"s

IT

50

200

80
O.1S
O.lS

200

-

I'A
I'A
V
rnA

RGK
RGK
RGS
RGK

0.7

0.9
l2S
3.0

V
I'A
rnA

50

-

Test Conditions

Units

1.2

= lA, iR = lA, RGK = lK

= lK, VORM = Rating
= lK, VRRM = Rating~
= 100f!, V = SV
= lK, Vo = SV
RGS = loof!, Vo = SV
RGS = 10K, Vo = SV
RGK = lK, Vo = SV
D

Note 1 See rating curves for full rating information.
Note 2 Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a
resistor, lK or smaller, or other adequate gate bias is used.

Gate Trigger Current

Gate Trigger Voltage

800

:;(

.::;

1.4

1.2

600

'"0:

~

ALL UNITS FIRE

fZ

'"«

'...."

0:

:>

f-

400

0

(J

>

0:

'"'"'"
ii:

ALL UNITS FIRE

1.0

f-

'"«f-

'"I

0:

.8

''""
ii:

.6

'"

200

f-

V/rrr-n.,

'"
«
f-

~

Ji

fjllL

'"I

~

-200

.4

~

>

.2

NO UNITS FIRE

-400

0 L.......
-65

-25
TJ

-

25

50

75

100

125

150

-65

JUNCTION TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710, 326-6509 • TELEX 95·1064

-25
TJ

10-23

-

25

50

75

100

125

150

JUNCTION TEMPERATURE ('C)

PRINTED IN U.S.A.

2N57Z4-2N5728

Max. Holding Current

Off-State Current

so

1000 r------,-------,----"---,---

!

~

~

'"

10

''""

10 I-------t-------+------+~~--t-------~

:>

r----r--


'"

-

~

100 I-------t-------+------+------t------r--\

1.01-------t-----;;;>"""I'------+---::..-£t--------\

---

oJ:
~

.5

I

I

-- ----

11(

t---FI""'lOI(

X
.1

- - - ------

.01

.001

L -____

25

~

______

50
TJ

~

____

~

______

~

_____

100
125
75
JUNCTION TEMPERATURE (OC)

-

.05

1SO

-65

-25
TJ

Min_ Holding Current

so

50

20

20

l-

10

10

'":>'"

5

:(

.5
z

'"

75

On-State Current
VS. Voltage

~ j--t-

l-

so

25

JUNCTION TEMPERATURE (OC)

-

0.1

0.2

0.5

--""

,1.0

2.0

5.0

10

20

50

V, -ON-STATE VOLTAGE (V)

10-24

PRINTED IN U.S.A.

2N5724·2N5728

Avg. Current
vs. Ambient Temperature

Avg. Current
vs. Case Temperature
PD 2.0

2.0

~
z

1.2

"-

V>

Z

0

3,,~

.8

.......

ci

>

'"I
..f'

6¢~f---

.4

----

"",""

i'-....."

I
80

90

T em" -

POWER DISSIPATION (W)
.8

.6

.4

.2

DC

~

.7
I-

.6

"''"
::>

.5

'"
u
;:"'

l~

I--

110

.4

V>

Z

0

ci

120

6¢
.3

>

'"
---t---- t':: ~

100

19
3,.)

I-

~~
~
...........
r0 I'.... "!

70

1.

.8

z

1<,

'"

l-

Pc .5

~

'"

"'

"'I-

1.0

!

I-

'"'"::>
u

1.5

DC

1.6

POWER DISSIPATION (W)

--...::::

130

'"I
-

.2
.1

~

140

150

25
TA m" -

MAX. CASE TEMPERATURE (OC)'

50
75
100
125
MAX. AMBIENT TEMPERATURE (·C)

150

Surge Current

~

50

I-

Z

"''"
::>
'"
u
;:"'

20

r--- t----,
I~

10

I

"'J
.~

I-

'1

z

0

0:

"''"Z

Tc=85°~-

..........

0

~

"''"'
'"
::>
V>

'"'"
"'

Il.

j

I'"

.5

T A = 75

0
";;-

.2
.1

.05

10- 5

10-4

10-3

10- 2

10-1

10

10'

10'

SURGE DURATION (s)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

10·25

PRINTED IN U,S.A.

2N6119-2N6120

PUTs
Planar, TO-18, Hermetic
FEATURES

DESCRIPTION

•
•
•
•
•
•

Functionally equivalent to standard unijunction transistors, Unitrode's Programmable
Unijunction Transistors offer the distinct advantage of versatile programming. External
resistors can be added to meet the designer's needs in programming Eta, RBB , I. and Iv
functions. This series also features a hermetically sealed TO-18 package for optimum
reliability in all environmental conditions. Applications include pulse and timing
circuits, SCR trigger circuits, relaxation oscillators and sensing circuits. For additional
information see Unitrode Application Note U-66.

Hermetically Sealed TO-18 Metal Can
Programmable Eta, RBB , I. and Iv
Maximum Peak Point Current: 150nA
Minimum Valley Current to 1.5mA
Nano-Amp Leakage
Passivated Planar Construction for Maximum
'Reliabilityand Parameter Uniformity

ABSOLUTE MAXIMUM RATINGS

±40V
....... 40V
...... 40V
-5V

Anode-to-Cathode Voltage, VAK
Gate-to-Cathode Forward Voltage, VGK .
Gate-to-Anode Reverse Voltage, VGAR .
Gate-to-Cathode Reverse Voltage, VGKR
Peak Recurrent Forward Current
10"s, 1% Duty Cycle ...
1OO"s, 1% Duty Cycle .
Power Dissipation
25°C Ambient
Derating Factor
Storage Temperature
Operating Temperature Range

........... 8A
................... .......... ........
.5A
.... 400mW
... 3.2mW/oC
_55°C to +125°C
.. -55°C to +125°C

MECHANICAL SPECIFICATIONS
2N6119-2N6l20

rt
B

C

j

GATE

-.-~=-r
A
= 0
...L...!

<=iF" J

~~F~E

TO-1S

A

8

C
ANODE

0

GATE CONNECTED TO CASE

G
H
J

INCHES
.178- 195 DIA.
.170-.210
.5 MIN.
.209-.230 DIA.

.017 ±

:gg~ 8:~

020 MAX.
1oo:l:.0lD DIA.
.041± 005
028-.048

10·26

MILLlMmRS
4.52-4.95 DIA.
4.31-5.33
12.70 MIN .
5.31-5.84 DIA.

.432 ± .~A
.508 MAX.
2.54:1:.254 OIA.
1.04:1:.127
711 1.22

~UNITRODE

2N6119-2N6120
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
2N6120

2N6119
Symbol

Test

Fig.

Min.

Max.

Min.

Max.

Units

-

5
2

-

1.0
0.15

itA
itA
itA
itA

Peak Current

I,

1

70

-

25

-

Valley Current

Iv

1

-

50

-

25

Vr

1

1.5
0.2
0.2

Gate-to·Anode Leakage

IGAO

2

Gate-to-Cathode Leakage
Forward Voltage
Pulse Output Voltage
Pulse Output Rate of Rise

IGKS
VF

3

Offset Voltage

Vo
t,

4
5
5

-

0.6
1.6
10
100
100
1.0

-

-

9

-

80

'[rJ" EY

C

-

R2

-

9

-

80

= 10k, Vs = lOV
= 1 Meg.
= 10k, Vs = lOV
= 1 Meg.
= 200n
= 10k, Vs = lOV
= 1 Meg.
T = 25'C, Vs = 40V
T = 75'C
Vs = 40V
IF = 50mA

mA
V
V
nA
nA
nA
V
V
ns

vr =vp -vs

vp
VS
V,

Vs

:l

0.6
0.6
10
100
100
1.0

-

+V

A G

-

1.0
0.2
0.2

Test Conditions

RG
RG
RG
RG
RG
RG
RG

'='Vs::::Y

Rt+R z

Vv
I,

IF

Iv

II

c) Characteristic Curve

b) Equivalent Test Circuit

a} Typical Circuit

Figure 1

Tr
l

V,

'

...L.

Figure 2

Figure 4

Figure 3

+20V

RT

51 OK
6V

CT
.2 pI
.6V

L-dJ-"-_ _ _ _ _ _ __

Figure 5

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10-27

PRINTED IN U.S,A.

2N6119-2N6120

".:;

Typical Peak Point Current
YS. Gate Source Voltage

"

10

lZ

_1
_ 2N6 119

I-

Z

'"

10K!!

0:

"

u

U

lZ

I-

.'"
.
....
.

10Ka
1Ma

>::

a.

...J

--K 1---

..'"

----

.
...J

ii:
>-

I

....

~
-~

I-

~'1000

200!l

0:

2000

:)

u

>-

'";;J, 100

10KU

...J

>

...J

10KU

C3

ii:
>l- 10

1MU

I
~

Rs=lMU

..?
0

-

f"-... I"'-

"

-40 -20 0 20 40 60 80 100 120 140 160
TA - AMBIENT TEMPERATURE ('C)

Typical Valley Current
YS. Ambient Temperature

__ r

--

10,000

--- -- ---

I-

~1000

I
10KU_

u

i:i...J

--- --- --

...J

;;

100

I l"'- I"'- r- l-

10KU,

r-

t- 1-

. l~U'l'"-- I"'- l"'-

...J

,

u

ii:
>l-

----- --- ---

10

Rs=lMU

I

t-.

'1'"

~
..?

,

-- l - t-

'!'---80

20

GATE SOURCE VOLTAGE (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX mOl 326-6509 • TELEX 95-1064

Vs
10Vl
-'--2N6119
- - - - 2N6120

20

z

:)

15

=
J
20~_u-1-1-lI- t1
- - - r--

~
0:

10
Vs -

,
.......

Typical Valley Current

---2N6119
- - - - 2N6120

z

~o

I"'-t---

YS. Gate Source Voltage
10,000

"

,01
-80

v s, = ~ov
- - - 2N6119
- - - - 2N6120

....

,,

I

---

10
15
20
Vs -GATE SOURCE VOLTAGE (V)

.:;

.1

I-

,01

-~

K

r--- r---

,, I" .... .... "
I"
f'.
,

a.

u

, ....

~

>::

u

RG==:lM!J ....

I
Re 1MU,

0a.

,1

ii:
>-

I t'-... t'-...
f'-...
1f~g~

.l

1.

10KU

:)

:)

z
0a.

10

'"0:0:

- - - - 2N6120

r--

Typical Peak Point Current
YS. Ambient Temperature

.:;

~O

-40 -20

0

-

20 40 60 80 100 120 140 160

TA -AMBIENT TEMPERATURE ('C)

10-28

PRINTED IN U.S.A.

2N6119·2N6120

Typical Pulse Output
Circuit Supply Voltage

Typical Offset Voltage

vs. Ambient Temperature
1.4

.

~

I

1.3

~ 1.2
UJ

"!:;

VS,

Vs

'.

1.1

0

>

1.0

I-

40

.9

11.
I-

36

......

.8

0

32

.7

UJ

28

..J

.6

0

>

I-

UJ

(/)

0

::>
::>
(/)

..J

t'i

0::

.5

l-

>-

.4

I
"
,;-

.3

,
~

"'~"

= 10V

::>

.

.....

~
1>
I'" ~

.1

lesslhanl"atthe- 12

l-

It?

./~.N

..J

I

.......

1

4

>0

0

L-.J.I~-'-....l.-L-LII_IL....L-L....L...l-L-'--.l..--'
048121620242832364044485256

-80 -60 -40 -20 0 20 40 60 80 100 120140 160

V-CIRCUIT SUPPLY VOLTAGE (V)

AMBIENT TEMPERATURE (OC)

Typical On-State Current VS. Voltage

Gate-Anode Blocking Current
vs. Ambient Temperature

:?

R mu.t be chosen so that
the current3va,Iabie at the
'mngpOmtexceedsl,and
sleady-staleon currenl,s

24

u

0::

./0

.......
TA -

'"

'"

11.

1'\

.2

20P Vo

10

,:;
I-

Z
UJ
0::
0::

~

::>

I-

u

~

Z

.1

UJ
0::
0::

~--~----4------+----~~~--~

;;:

u

..J
In
UJ
C

I-

.

~

'"i5
(/)

Z

.01 c---jc------t--7"---+-,~--I__--_I

0

UJ

I

!:i:

-"

"I .001
~

I

::>

g

.1

L.__' -____LL____-L______' -____.J

.;p -80 -50
TA -

o
50
100
150
AMBIENT TEMPERATURE (OC)

.01
10

.1
V, -

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10-29

100

ON·STATE VOLTAGE (V)

PRINTED IN U.S.A.

2N6137

PUTs
Military, Planar, TO-18, Hermetic

FEATURES

OESCRIPTION

• Available as JAN and JANTX types
per MIL standard 19500/493
• -55°C to +125°C Temperature Range
for Timing and Oscillator Circuits
• I, :;;;; 10ilA at T = -55°C
Iv ;;;. 40l'A at T = +12SoC
• Programmable ~, RBB , Ip and Iv
• Peak Recurrent Current: of SA
• low On-State Voltage Drop
• Hermetically Sealed Metal Case and
Planar Passivated Construction for
Maximum Reliability and Parameter Stability.

The Programmable Unijunction Transistor is functionally equivalent to a standard
unijunction transistor with the advantage that external resistors can be used to
program ~, RBB , Ip, and lv, depending upon the designer's needs. The Unitrode
device, in addition to allowing programmable versatility, is completely planar
passivated and packaged in a TO-1S hermetically sealed package, which offers an
order of magnitude improvement in inherent reliability over many similar devices.
Applications include pulse and timing circuits, SCR trigger circuits, relaxation
oscillators, and sensing circuits. For further application information see Unitrode
Application Note U-66.

ABSOLUTE MAXIMUM RATINGS
.... 40V

Anode-to-Cathode Forward Voltage, VAK
Anode-to-Cathode Reverse Voltage, VAKR .....
Gate-to-Cathode Forward Voltage, VGK
Gate-to-Anode Reverse Voltage, VGAR
Gate-to-Cathode Reverse Voltage, VGKR
Peak Recurrent Forward Current, 10l's 1% Duty Cycle.
Peak Gate Current, IGM
Average Gate Current, IG(AV) .
Power Dissipation
2SOC Ambient.
Derating Factor
Storage Temperature Range
Operating Temperature Range

........ 40V
..... 40'1
............................ 40V
......... SV
....... 5A
....... 250mA
........ SOmA

.... 300mW

........ 2.4mVi/oC
-SSoC to +125°C
.. _55°C to +12SoC

MECHANICAL SPECIFICATIONS

2N6l37

rt j
-r-[]=-r
=
B

A

..L-

GATE

C

0

C
D

c:;;= J

~~F ~

TO-1S

INCHES
.178-.195 DIA.
.170- 210
.5 MIN.
.209- 230 DIA.
017:1: .002 OIA.

E

ANOOE CONNECTED TO CASE

G

.
.001 DIA.
.020 MAX.
.100'.010 DlA
.04lt.OO5
.028-.048

10-30

MILLIMETERS
4.52-4.95 DIA .
4.31-5.33
12.70 MIN .
5.31-5.84 DIA

.432 ±

.g~~

.508 MAX.
2.54:.254 OIA.

1.04: 127
.711-1.22

~UNITRDDE

2N6137
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)t
Figure

Minimum

Typical

Maximum

Units

Test Conditions

SUBGROUP 1 Visual and Mechanical

Symbol

-

-

-

-

-

-

-

SUBGROUP 2
Gate-anode blocking current
Gate-cathode blocking current

I GAO
I GKS

2

3

-

2
5

10
100

nA
nA

VG.::= Rating
VGK ::= Rating

SUBGROUP 3
Peak-point anode current

Ip

1

-

Vr

1

I,A
I'A
V
V

RG ::= 1 Meg I V - 10V
RG::= 10K ( ; -

Peak-point offset voltage
Valley-point anode current

Iv

1

1
2.5
0.26
0.35
15
200
2

llA

RG
RG
RG

Test

0.2
0.2

-

70
1.5
SUBGROUP 4
Forward on-state voltage
Peak pulse voltage
Peak pulse voltage rise time

VF
Vo
t,

SUBGROUPS
Gate-anode blocking current (l25'C Test)
Valley-point anode current (l25'C Test)
Peak-point anode current (-55'C Test)

t

I GAO
Iv
Ip

4
5
5

-

2
1
1

-

9

-

40

-

0.85
12
50

150
100
7.5

2
5
1.6
0.6
50
-

-

RG ::= 1 Meg ( V - lOY
RG::= 10K
$-

I,A
rnA

=
= 110KMeg f V, = lOY
= 200!!

V
V
ns

1,::= SOmA

500

nA

-

I'A
IlA

VG• ::= Rating
RG::= 10K, V, ::= lOV
RG ::= 10K, V, ::= lOY

1.0

80

10

All values in table are JEDEC registered

Iv
VALLEY
CURRENT

NEGATIVE
RESISTANCE
Ip
.,,-REGION
SWITCH~
POINT

===!=+Vs Vp
Vr

a) Typical Circuit

b) Equivalent Test Circuit

Vv
VALLEY VOLTAGE

== Vp -Vs

PEAK VOLTAGE

Figure 1

T~

If

Figure 2

Figure 3

Note: Conditions for oscillation

V8B -V p

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Figure 4

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R,
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R

Figure 5
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10-31

PRINTED IN U S.A

2N6137

Peak Point Current vs_ Ambient Temperature

Peak Point Current vs. Gate Source Resistance
10
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SPEC.
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UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

150

Valley Current VS. Ambient Temperature

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125

PRINTED IN U.S.A

2N6137

Offset Voltage vs.
Ambient Temperature

Typical Pulse Output Voltage vs.
Circuit Supply Voltage

3.0

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Gate-Anode Blocking Current vs.
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10
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UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

ISO

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25
50
75
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ISO

PRINTED IN U.S.A.

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AA114-AA118

Min. Holding Current

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UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

10-36

103

·'PRINTED IN U.S.A.

ADI00-ADI04
ADI07-ADll1
ADl14-ADl18

SCRs
1.6 Amp, Planar

FEATURES

DESCRIPTION

•
•
•
•

This data sheet describes Unitrode's AD Series 1.6A SCRs designed for mediumcurrent control and sensing applications. Units are available in a complete range
of blocking voltages from 60 to 400 volts.

Maximum Gate Trigger Current: 2, 20 or 200!,A
Tight Gate Trigger Voltage Range: .44 to .6V
Voltage Ratings: to 400V
Specified for dv/dt and Switching Time

The ADlOO series offers a maximum gate trigger current of 2.0 microamps making
it the most sensitive device of its type. The ADlO7 series has a maximum IGT of
20.uA while this parameter is specified at 200!,A for the AD1l4 series.

ABSOLUTE MAXIMUM RATINGS
AD100
AD107
AD114

Repetitive Peak Off-State Voltage, VORM .
. ....
Repetitive Peak Reverse Voltage, VRRM ..
.......
Non-Repetitive Peak Reverse Voltage, VRSM .
.
Non-Repetitive Peak Off-State Voltage, VOSM
D.C. On-State Current, IT
7S'C Ambient .
85'C Case
Repetitive Peak On-State Current, ITRM
Peak One Cycle Surge (Non-Rep.) On-State Current,
Peak Gate Current, IGM
Average Gate Current, IGIAVI .
Reverse Gate Voltage, VGR
Operating and Storage Temperature Range

AD102
ADIOS
AD116

AD10l
AD108
AD115

60V.

.. lOOV ..
... lOOV ...
......... lSOV..

GOV.
80V .....

AD103
ADll0
ADI17

.. 200V ... .
........ 200V .. .
.......... ..... 300V ..
. SOOV ..

.............. 300V .
... 300V .
......... 400V ...

AD104
AD111
AD118

... 400V
. ..... 400V
SOOV

... 450mA ...
......................... l.6A
up to 30A.
... .lSA. ..
.... 2S0mA..
........2SmA. ... .
... 6V ... .
-6S'C to +150'C ...

ITSM .

MECHANICAL SPECIFICATIONS
AD100-AD104 AD107-AD111

[eTc

B

E

l

~~?

-

~ ~~,!

~.
-------

A

-

F

-

-

~'OO"

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\

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, -1--'
./

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L

305-335

335-370
240-260

C
0
E

010-030
5 MIN

F

Ol7±

G

200
100

GATE

~f---ANODE

---1

ins.

A
B

~

H

J

gg~

K

031±003
029-045

L

100

10-37

ADl14-AD118

TO-20SAD (TO-39)

mm
775-851

851-940
635-660
25-76
1270 MIN

432:t

~§

5DB

254
79% 08

74-114

254

~UNITRDDE

AD100-AD104 ADl07-AD111 ADU4-ADU8
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Parameter

SUBGROUP 1
Visual & Mechanical
SUBGROUP 2 (25'C TESTS)
Off-State Current
Reverse Current
Reverse Gate Current
Gate Trigger Current
ADlOO-104
AD107-111
AD114-U8
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (25'C TESTS)
On-State Voltage-Critical Rate of Rise
Gate Trigger-on Pulse Width
Delay Time
Rise Time
Circuit Com mutated Turn·off Time
SUBGROUP 4 (125'C TESTS)
Off-State Current
Reverse Current
Gate Trigger Voltage
Holding Current

Symbol

Min.

Typical

Max.

Units

-

0.44
-

-

-

-

.01
.01
0.1

0.1
0.1
0.2

p.A
p.A
p.A

0.2
2.0
20
0.52
1.1
0.5

2.0
20
200
0.60
1.5
2.0

p.A
p.A
p.A
V
V
mA

-

Vlp.s

50

P.s

RGK = 1K, Vo = 30V
IG lOmA, IT lA, Vo = 30V
IG 10mA, IT = lA, Vo = 30V
IG = 10mA, IT = lA, Vo 30V
IT = lA, IR lA, RGK
lK

100
100

p.A
p.A
V
mA

RGK =
RGK =
RGS =
RGK

10RM
IRRM
IGR
IGT

VGT
VT
IH

0.3

dvldt
tpg (on)
td
tr
tg
IORM
IRRM
VGT
IH

100
0.5
0.6
0.4
20

50

-

0.15
0.2

2.0

10
30
0.2
0.4

Test Conditions

RGK = 1K, VORM = Rating
RGK = 1K, VRRM Rating
VGR = 2)/
RGS = 10K, Vo = 5V

=

=

=
=

p'S
p's
p'S

-

1.5

=

RGS
lOOn, Vo 5V
IT = 1.0 Amp (pulse)
RGK = 1K

=

=
=

=

=

1K, VORM = Rating
lK, VRRM = Rating
lOOn, Vo = 5V
lK

Note: Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a resistor, 1000 ohms or smaller, or other adequate bias is used.

Gate Trigger Current
AD107 Series

Gate Trigger Current
AD100 Series
80

<
.5

.

I-

z

0:
0:

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-

~ 600

0:
0:

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IGT MAX.
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AVI. Current VI. Case Tampellture
1

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JUNCTION TEMPERATURE (Oe)

-

Avg. Current v•• Ambient Tempellture
Po -

POWER DISSIPATION (W)

1.5

POWER DISSIPATION (W)

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100

110

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150

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125
150
50
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MAX. AMBIENT TEMPERATURE (Oe)

Surge Current

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UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

10

I

10 -, 10 -, 10

.

-

1

10

i

10 2

UP

SURGE DURATION (5)

10-39

PRINTED IN U.S.A.

GAIOO
GAIOI
GAI02

SCRs
Nuclear Radiation Resistant, Planar

FEATURES

DESCRIPTION

• Optimized for Radiation Resistance
• Fully Characterized for "Worst Case"
Design
• Post Radiation Design Limits Specified
• Passivated Planar Construction for
Maximum Reliability and Parameter
Uniformity
• Pulse Currents: to 30A
• Max. Trigger Current 20mA after
3 X 10 '4 NVT
• Max. Holding Current 30mA after
3 X 10 '4 NVT

The GA100 Series of Radiation Hard SCRs have been designed to provide
significantly greater radiation tolerance than conventi 'nal SCRs or Transistors with
the same current handling ability. This Series is capable of operation after exposure
to lO'S NVT.
The radiation resistant characteristics of the GA100 series devices make them
particularly desirable for use under radiation environments in squib firing circuits;
inverters and converters; pulse generators; relay drivers; and modulator discharge
switches.

ABSOLUTE MAXIMUM RATINGS
GA10l

GA100

. ....... 60V ..... .

30V ...

Repetitive Peak Off-State Voltage, VORM
D.C. On-State Current, Ir
75'C Ambient .
100'C Case .
Repetitive Peak On-State Current, IrRM .
Surge (non-rep.) On-State Current, IrsM (Sq. Pulse-50ms)
Peak Gate Current, IGM
Average Gate Current, IG(Av) .
Reverse Gate Voltage, VGR ..
Reverse Gate Current, IGR .
Storage Temperature Range .
Operating Temperature Range .

GA102

SOV

200mA ..
.... ..400mA
.. up to 30A
..................... 5A ....... .
... 250mA ..
................. .
. ... 25mA ... .
........... 5V ...... .
..... 3mA.
.. -WC to +200'C.
. .... -65·C to +150'C ..... .

MECHANICAL SPECIFICATIONS

GA100

GA10l

GAl 02

TO·18

GATE

A

ANODE

0

. E
F
G
H

INCHES
.178-.195 OIA.
.170-.210
.5 MIN.

4.52-4.95 DIA
4.31-5.33
12.70 MIN.

209-.230 DIA.

5.31-5.84 DlA.

.017 • :gg~ g:~:

.432 • :g~~

.020 MAX.
.100*-.010 DlA.
.04l:t 005

.028-.048

10-40

MILLIMET£RS

.508 MAX.
2.S4:t.2S4 DIA.
1.04t.127
.711-1.22

~UNITRODE

GA100

GA101

GA102

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

Test

IORM
IGR
1ST
VGT
VT
IH
dvc/ dt
tpg (on)
td
t,
tq
IORM
VGT

)t'

10 14

NVT Design

limits

Units

Test Conditions

Typ.

Max.

Min.

-

-

-

-

-

-

MIL-STO-750
Method 2071

-

.005
.01
2.3
O.S
1.1
0.7

0.1
0.1
3.5
0.7
loS
10

-

1.0
1.0
20
1.5
3.0
30

/LA
/LA
mA
V
V
mA

RGK
220n, VORM
Rating
VGR
2V
RGK
220n, Vo
5V
RGK
220n, Vo
SV
iT
1A (pulse test)
RGK
220n

-

V//LS
"S
/LS
"S
"s

Min.

SUBGROUP 1
Visual and Mechanical
SUBGROUP 2 (2S'C Tests)
Off-State Current
Reverse Gate Current
Input Trigger Current (Note 2)
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (2S'C Tests)
Off-State Voltage-Critical Rate of Rise
Gate Trigger-on Pulse Width
Delay Time
Rise Time
Circuit Commutated Turn-off Time
SUBGROUP 4 (12S'C Tests)
High Temp Off-State Current
High Temp Gate Trigger Voltage

Post 3

Pre radiation
Limits

Symbol

-

1.8
0.4
0.8
0.3
20

-

-

0.1

40
.02
.02
.OS
loS
10
.17

-

.OS

-

2.5
100

-

0.1

Max.

0.1

-

-

1.0
100

-

"A
V

=
=
=
=
=
=
=
=
=
RGK = 220n, Vo = 30V
IG = 25mA, IT = lA, Vo = 30V
IG = 25mA, IT = lA, Vo = 30V
IG = 25mA, IT = lA, Vo = 30V
IT = lA, iR = lA, RGK = 220!l
RGK = 220n, VORM = Rating
RGK = 220n, Vo = 5V

Notes: 1. Off·State voltage ratings apply over the operating temperature range provided the gate is connected to the cathode through an
appropriate resistor, or other adequate bias is used.
2. Total Input Trigger Current, including current required by 220n gate bias resistance.

DESIGN CONSIDERATIONS

1. Curve 1 shows the off-state current, IORM of the SCR as a function of temperature. IORM is increased by radiation damage,
but is not a design consideration at the recommended gate bias levels.
In order to optimize for radiation tolerance, reverse blocking capability has not been retained as a design feature. Devices
with reverse blocking capability can be provided.
.
2. Minimum critical dv/dt levels are defined in Curve 2. The dv/dt capability is improved after radiation because of reduced
triggering sensitivity. dv/dt is therefore a design consideration only prior to radiation.
3. Curves 3 and 4 show the limits of Gate Trigger Voltage and Total Input Trigger Current prior to radiation. Maximum design
limits after a total radiation dosage of 3 x 10'4 NVT is also shown. Curves 5 and 6 show the maximum limits of Gate
Trigger Voltage and Total Input Trigger Currents as a junction of neutron dosage. The minimum level of Trigger current
prior to radiation is established by the shunting effect of a 220 ohm resistor between gate and cathode. After radiation
the device is less sensitive and Total Trigger Current will increase to a level relatively independent of the bias resistance.
The 220 ohm resistor is recommended since it raises the minimum preradiation trigger current to a level that is closer to
the past radiation limit and minimizes the percentage change in this parameter.
4. Current ratings shown in Curves 10, 11, and 12 apply after the device has been subjected to 3 x 10'4 NVT. Current ratings
prior to radiation are greater than the values indicated.
5. Gamma radiation produces a reversible ionization (leakage) current within the device which is directly proportional to the
Gamma flux level. When the Gamma flux level is in the range of 10 to 100 Roentgens per microsecond for burst durations
greater than 1 microsecond, the device will self trigger ON. For the radiation bursts associated with nuclear explosions,
the Gamma flux level will invariably cause device triggering at radiation levels significantly below the levels that would
produce detectable permanent device damage due to cumulative neutron dosage. In applications where the burst effect
triggering cannot be tolerated, it is necessary to reset the device after the radiation burst. Special circuit approaches such
as additional SCRs to c.rowbar or otherwise cancel the output function may be used.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWXJ710) 326·6509 • TELEX 95·1064

10-41

PRINTED IN U S.A

GAlOO
1.
1000

2.

Off-State Current

GAI02

Minimum Critical DV/DT
vs. Neutron Dosage

SOD

r---'---'---'---'--"7l

GAlOl

I

=

RGK
220(J
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~ 100
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20

~ 2.0

~

75

125

100

O.S
1010

150

,..---,.--,--,--....,--,.----.--r-....,

f---+--t--

I-

200

'"'"

100

'"

SO

UI

I-

....

1.0

~"""'-+-

>~

0.5

F=.....r-;:;~~~~~~~~~~~
0

25

50

75

100

125

5.

10

~
-'

S

~

0

I-

150

-6S

Max. Gate Trigger Voltage
vs. Neutron Dosage
SOD
RGK ; 220(J

3.0 t - Vo

= 5V

UI

"~

2.5

'"

L

2.0

UI

""iX
I-

.
..:.

1.5

UI

_6S'C

....

"X

1.0
2S'C
0.5
+12S'C
1010

=

~

.s

200

I-

z

100

'"'"
:l
U
'"

SO

1011

--

-

10 12

V
V

V

10 13
NVT

il
Vi

I

RGK
I- Vo

= 220(J
= sv

1

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

20
10 r--_6S'C

i==-1 2s,c

Q.

V
10 14

UI

""iX
....
....
:l

150

Max. Input Trigger Current
vs. Neutron Dosage

UI

-'
0

>

-2S
2S
SO 7S 100 12S
TJ
JUNCTION TEMPERATURE ('C)

6.

3.5

~

= 5V

20

:l

JUNCTION TEMPERATURE ('C)

-

10 16

U

""iX

~

Vo

Z

UI

Q.

-25

10 15

= 2200

RGK

.s

RGK = 220!l---r--r--"j
VD = 5V

k;;:--+--t--r----lr--t--t--+---I

TJ

10 14

1000
~ SOD

1.5 t---+--t-"""k...:

I

1013

Input Trigger Current

4.

Gate Trigger Voltage

:l

IIJ

10 12

1011

NVT

3.5 t---+--t---'r----i---r--j---t---t

2.0

/

V

+d5'C

JUNCTION TEMPERATURE ('C)

-

IIJ

~

---

10

Z

L..._ _....L._ _- ' -_ _- - '_ _--'~_~

3.
3.5

-----V

l

25 C

:l

.01 1--74----+----+---i----1

50

/

-6~'C

:.
:.

//

//

TJ

"~"

-'

;:::
iX

0.1 ....= - + - -

25

i!i

50

1,

u

.001

~

b
:>
c

u

1.0 ....

I

-~

100

.

:l
U

~"

~

+12S'C

..

-

II

./ //

'L

L

_.-/

X

:.

10 15

O.S
10 10

10 16

10-42

1011

10 12

1013
NVT

10 14

10 15

10 16

PRINTED IN U.S.A.

GA100
Holding Current

7.

500

=<
....z

=<
.§.
....

.§.

200

'"
:::J
"Z

100

0:
0:

z

UI

0:
0:

.-

/.

50
-65'C

t.'J

:::J
t.'J

Z

0

..J

x

l:

:;;

1

1

o

+25'C

10

l:

o

'"

-'

TJ

-

50

75

100

125

RGK

lOll

10 10

10 12

20
10

o

5.0

r--- r-

I - - f-I,

2.0

LOA

.-

"I

1.0

,,/'

I, = O.IA

>"

'"

20

~

5.0

"I
z

0

2.0

'"""

1.0

'">>=

0.5

0.2

'"

0.2

O.i

>=

Q.

'"

0:

1

1011

1012

1013
NVT

1014

1015

J

10 16

PA-

25

0

0.5

0.4

0.3

0.2

50

0.1

50

~
....z

'00/

20
10

'"....

'"

5.0

:::J

0:
0:

I/)

z0
"'"

:::J
I/)

1.0
0.5

'"
>

0.5

'"""'"

UI
Q.
UI

0.2

.l-

Q.

Q.

>=
>=

1

1

0.2

100

0.1

125

150

AMBIENT TEMPERATURE ('C)

Surge Current VS. Time

,,

'" '"1"',

I,

BE~ORE ~URG~ =

0

I'"

"

~

,

SOLID LINE, RATED ' " '
BLOCKING VOLTAGE
MAY BE APPLIED AFTER
SURGE

r-,

~, 1'--

DAS~ LlN~'

BLOCKING VOLTAGE Tc.::: l00'C
MAY NOT BE SUSTAINED
FOR ~.1 S~CON~S AF~ER SYRGE

TA=~

0.1

0:

J

5.0
2.0

1.0

UI

10

"'"
t.'J
0:

2.0

20

75

50

m,,- MAX.

12.

POWER DISSIPATION (W)

()

....'"

0.1

0.1

11. Peak Current vs. Case Temperature

:::J

0.2

.05
TA

'"0:0:

0.3

Q.

.05
1010

~
....
z

10 16

10

"....'"
'"

~ 0.5
:;;

I,

50

:::J

--- ~

UI

10 15

POWER DISSIPATION (W)

0.4

~

0:
0:

/

I, = 5.0A

10 14

10. Peak Current vs. Ambient Temperature

....z

>

10 13
NVT

JUNCTION TEMPERATURE ('C)

PA-

~

= 220(!

0.5

150

50

'"t.'J

/

1.0

9. Max. Dn·State Voltage vs. Neutron Dosage

is

V

-'

x

'"

S

VI

/

+125'C

:;;

~

-----/

20

0
..J

()

25

GAI02

8. Max. Holding Current vs. Neutron Dosage

100r-----r--,---.---.---r--,---~_.

-25

GAlOl

.05

10-5

.05
90

100
T C m" -

110

120

130

140

150

10-4

10-3

10-2 10- 1

1

10

10 2

103

SURGE DURATION (5)

MAX. CASE TEMPERATURE ('C)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10-43

PRINTED IN U.S.A.

SCRs

GA200
GA200A
GA201
GA20lA

Nanosecond Switching, Planar

GB200
GB200A
GB201
GB20lA

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode Nanosecond Thyristor Switch combines the turn-on speed of logic
level transistors with the high current switching capability inherent in SCRs. With
this device engineers can now design circuits capable of switching pulse currents of
lA in less than IOns or up to 30A in less than 20ns.

Rise Time: IOns
Delay Time: IOns
Recovery Time: 0.51's
Pulse Current: to lOOA
Turn-on with 20ns, 10 mA Gate Pulse

The GA/GB200 series is specifically designed for use as switching elements in high
speed, low-to-medium power radar pulse modulators. Other applications include
switching elements for phased array radars, laser pulse drivers, harmonic wave-form
generators, line drivers and high current replacements for avalanche transistors.
For applications requiring higher voltage levels, Unitrode has developed several
"series string" circuits which allow the series connection of virtually an unlimited
number of devices for voltages as high as 2000V with no significant decrease in
speed. These circuits are described in Unitrode's,Design Note #14.

ABSOLUTE MAXIMUM RATINGS
GA2DD
GA2DDA

Repetitive Peak Off-State Voltage, VORM .
Repetitive Peak On-State Current, ITRM .
D.C. On-State Current, IT
70°C Ambient .
70°C Case.
Peak Gate Current, IGM
Average Gate Current, IGIAV)
Reverse Gate Current, IGR .
Reverse Gate Voltage, VGR ...
Storage Temperature Range .
Operating Temperature Range

GA2Dl
GA2D1A

GB2DD
GB2DDA

GB201
GB2D1A

.... 60V ....... .
. ..... 100V......................... 60Y ....... .
... 100V
. . . up to IOOA ...
up to 100A .
. ." ..... 200mA .
.. ..400mA ..
250mA ..
25mA.
. 3mA.
. ... 5Y ....

6A.
. ...... 250mA ....
.. .............................. 50mA ..
3mA
...... 5V ...
.. .. -65°C to +200°C ........................................
... -wC to +150°C.

MECHANICAL SPECIFICATIONS
GA200 GA200A GA201

INCHES

A
B
C
0

.178-.195 DIA

E

.017 ±

F
G

.020 MAX.

H
J

170 .210
5MIN
.209-.230 OIA

'GGf g:~

lOOt 010 DIA
04U 005

.028- 048

C

0
E

NOTE: Anode connected to case.

INCHES
.400- 455
.090-.150
320-.468
570- 763
.318 380

:8ig

F

,055

G
H

424- 437
185- 215

t

10-44

TO-18

MILLIMETERS

452-4.95 DIA.
431 5.33
12.70 MIN

5.31-5.84 DIA .
.432 ± :g~~
.508 MAX .
2.54:1:.254 DIA
1.04;1; 127

711-1.22

GB200 GB200A GB201

A
B

GA201A

GB201A

TO-59

MIUIMETERS
10 16-11.56
228-381
8.13-11.88
14.48-19.38
807-965
140 t '~~i
1077-11.10
4.70 546

~UNITROOE

GA200

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

GA20l

GA20lA

GB200 GB200A GB20l

GA200A

GB20lA

Test

Symbol

Min.

-

Delay Time

td

-

Rise Time GA200, 200A, GB200, 200A

t,

Rise Time GA20l, 20lA, GB20l, 20lA

t,

-

Gate Trigger on Pulse Width
Circuit Com mutated Turn-off Time
GA200,.20l, GB200, 201
GA200A, 20lA, GB200A, 20lA

-

Typ.

Test Conditions

Max.

Units

30

ns
ns

IG :=: 20mA, IT :=; lA
IG :=: 30mA, IT :=; lA

25

ns
ns

Vo:=; 60V, IT:=: 1A (1)
Vo :=; 60V, IT :=: 30A (1)

20

ns
ns

Vo :=; 100V, IT :=; lA (1)
Vo:=; 100V, IT:=: 30A (1)
IG :=; lOmA, IT :=; lA

20
10

-

15
25

-

10
20

-

t p9 !onl

-

.02

.05

ps

tq

-

0.8

2.0

I'S

tq

-

0.3

0.5

~s

-

.01

0.1

~A

VORM :=; Rating, RGK :=: lK

-

20

100

/IA

VORM :=; Rating, RGK
l50'C

IT :=; lA, I. :=; lA, RGK :=: lK

Off-State Current

IORM

Reverse Current

IRRM

-

1.0

10

mA

VRRM :=; 30V, RGK :=; lK (2)

Reverse Gate Current

IGR

-

.01

0.1

mA

VGRM :=; 5V

Gate Trigger Current

IGT

-

10

200

IIA

Vo:=; 5V, RGs:=: 10K

Gate Trigger Voltage

VGT

On-State Vo Itage

VT

Holding Current

IH

Off-State Voltage-Critical Rate of Rise
Notes: 1. Is

= lOrnA; Pulse Test,

dv/dt

= lK,

0.4

.06

0.75

V

Vo:=; SV, RGs:=: lOOn, T :=; 2S'C

0.10

0.2

-

V

T:=; +150'C

-

1.1

1.5

V

IT:=:2A

0.3

2.0

5.0

mA

Vo :=; 5V, RGK :=: lK, T :=; 25'C

0.05

0.2

mA

T:=; +150'C

20

40

-

Vips

Vo = 30V, RGK = lK

Duty Cycle <1%.

2. Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the
Reverse blocking mode on a continuous basis.

Switching Speed (Typical)
GA/GB200 Series
1000

Peak Current vs. Pulse Width
. GA200 Series

......

~1000

r------.----....,.----~

z

'"'"

:J
U

OJ

S100

. 100
oS

If)

Z

....

o

:;:

'"a..

;::
I
~

;;'i
~

10

;::

E
a..

DUTY CYCLE = .005%
OUT
DUTY CYCLE .0001 %
Y CYCLE _ 0 ~
OR LESS
-·l%...:
~
DUTY CYCLE .1%~----.I
DUTY CYCLE - .05%
OUTY CYCLE - .5r0.2
DUTY CYCLE = 1%

....

1

L -_ _ _ _ _k -_ _ _

.1

~

'"I
J

_ _ _ __ J

10
I, - ANODE CURRENT (AI

100

DUTY CYCLE _ 5%-'"
DUTY CYCLE '110%--"
1.1

100

10
tp - PULSE WIDTH (ps)

NOTES: 1. DATA BASED ON ON-STATE
VOLTAGE GRAPH AT T, = 1SO'C.
BLOCKING VOLTAGE MAY BE
APPLIED IMMEDIATELY AFTER
TERMINATION OF CURRENT
PULSE.

NOTES: 1. Vo = Rated VO'M
2. TA =25'C
3.I G =20mA
4. td = 20ns TYPICALLY FOR ALL
TYPES INDEPENDENT OF ANODE
CURRENT

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6S09 • TELEX 95-1064

---=:::

10

10-45

PRINTED IN U.S.A.

\

GA200 GA200A GA201 GA201A
GB200 GB200A GB201 GB201A

Peak Current vs. Pulse Width
GB200 Series

Peak Current VS. Pulse Width
GB200 Series
$1000

IT

I-

Z

'"a:a:
:::>
u
w

DUTY CYCLE=l%
tE,UTY CYCLE .1% OR LESS
DUTY CYCLE
.5%

~

'"Z

o

~U YCYCL

DUTY CYCLE
DUTY CYCLE

'"

'"

10%-' I

0.

~
j::

5
'"a:
0.

10
PULSE WIDTH (.s)

.1%-'

DUTY CYCLE
10 DUTY CYCLE

is: J

DUTY CYCLE _

5%~

DUTY CYCLE

10%-'

~-

T

DUTY CYCLE _

SO%~

10
(.s)

100

NOTES: 1. DATA BASED ON ON·STATE
VOLTAGE GRAPH AT T, = 150'C.
BLOCKING VOLTAGE MAY BE
APPLIED IMMEDIATELY AFTER
TERMINATION OF CURRENT
PULSE.
2. TA = 75°C

APPLIED IMMEDIATELY AFTER
TERMINATION OF CURRENT
PULSE.
2. Tc = 75'C

Surge Rating Maximum
GA/GB200 Series

On-State Current vs. Voltage
GA/GB200 Series

Ti=150~?

DUTY CYCLE

t, - PULSE WIDTH

~~~~~~~GG:~~~~~ ~A~ ~~·C.

$

.001%
OR LESS
DUTY CYCLE

100

NOTES: 1. DATA BASED ON ON·STATE

100

DUTY CYCLE

t::---=I:

«

DUTY CYCLE _ 20~::/
DUTY CYCLE = SO%

tp -

DUTY CYCLE= .05%
100

~;=25'C
I

I-

Z

"'
0:
0:

10

::l
0

"'!(
I-

III

z
0
I

/

II

I

..!'

II

.1
.1

I
VIM -

10
ON·STATE VOLTAGE (V)

100
tp -

10
PULSE WIDTH (.s)

100

NOTES: 1. BLOCKING VOLTAGE MAY NOT BE
APPLIED FOR .001 SEC. AFTER
TERMINATION OF SURGE PULSE
AS JUNCTION TEMPERATURE
WILL EXCEED lSO'C.
2. T c =7S'C

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6S09 • TELEX 95-1064

10-46

PRINTED IN U.S.A.

SCRs

GA300
GA300A
GA301
GA301A

Commercial Nanosecond Switching
Planar
FEATURES
• Rise Time: IOns
• Delay Time: IOns
• Recovery Time: 0.51's
• Pulse Current: to IOOA
• Turn·on with 20ns, 10mA gate pulse

GB300
GB300A
GB301
GB301A

DESCRIPTION
Unitrode's Nanosecond Thyristor Switch combines the turn-on speed of logic level
transistors with the high current switching capability inherent in SCRs. With this
device, engineers can now design circuits capable of switching pulse currents of
lA in less than IOns or up to 30A in less than 20ns.

The GA300, GB300 Series is specifically designed for use as the switching element
in high speed laser diode pulse drivers. Other applications include electronic
crowbars, harmonic wave-form generators, line drivers and general purpose replacements for avalanche transistors. For applications requiring higher voltage levels,
Unitrode has developed several "series string" circuits which allow the series connection of an unlimited number of devices for voltages as high as 2000V with no
significant decrease in speed. These circuits are described in Unitrode's
Design Note #14.

ABSOLUTE MAXIMUM RATINGS
GA300
GA300A

Repetitive Peak Off-State Voltage, VDRM
Repetitive Peak On-State Current, ITRM
Peak Gate Current, IGM .
Average Gate Current, IGIAVj
Reverse Gate Current, IGR .
Reverse Gate Voltage, VGR .
Storage Temperature Range .
Operating Temperature Range

GA30t
GA30tA

. .... GOV.

.

GB300
GB300A

GB30t
GB30tA

100V ..
up to 100A .
250mA
25mA ..
3mA.
.. 5V

.. GOV........ ..
100V
.. up to 100A
250mA.
50mA.
3mA ."
..... 5V .
.. -G5'C to +150'C... ................
.. ................. .
O'C to +l25'C ...... . ..... .... ...... ...... .. ....... .

MECHANICAL SPECIFICATIONS
GA300

B

INCHES
178 .195 DIA
170-.210

C
D

.5 MIN.
.209 23001A.

E

017 ±

F
G

020 MAX
lOOt 010 OIA.
041± 005
028- 048

A

H

J

GB300

r-

G

GATE
ANODE

-.

88f gt~

GB300A

GA301

GA301A

TO-18

MILLIMETERS

452-49501A
431-533
12.70 MIN
531-5.84 DlA

432 ± .051

.025
508 MAX

2 54t.254 CIA
I 04t 127
.711 122

GB301

GB301A

TO-59

->I

$ !:}

F
CATHODE

GA300A

TH

INCHES

MILLIMETERS

A

400 455

10 16-11 56

B

228-381

E

.090- 150
320 468
570- 763
318 .380

C
D

gIg

813-1188
14.48 1938
807-965

.~~t

F

055 ±

G

424- 437

1077 11.10

H

185- 215

4.70 546

1.40 ±

NOTE: Anode connected to case.

1179

10-47

~UNITRDDE

GA300, GA300A, GA30l, GA30lA
G8300, G8300A, G8301, G830lA

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Min.

Typical

t,

-

20
10
15
25
10
20

tq

-

Symbol

Test
Delay Time

td

Rise Time (Note 1)
GA300, 300A, G8300, 300A

t,

Rise Time (Note 1)
GA30l, 30lA, G830l, 301A
Circuit Commutated Turn-off Time
GA300, 301, G8300, 301
GA300A, 301A, G8300A, 301A
Gate Trigger-on Pulse Width
Off-state Current

IDRM

Reverse Current (Note 2)

IRRM

-

Gate Trigger Voltage

VGT

0.4
0.10

tpg Ion)

Gate Trigger Current
On-state Voltage
Off-state Voltage - Critical Rate of Rise
Reverse Gate Current
Holding Current
Notes: 1. IG = 10mA; Pulse Test, Duty Cycle

-

IGT
VT
dvldt

15

IGR

-

IH

0.3
0.05

Test Conditions

Units

Max.

30

IG == 20mA, IT == lA
IG == 30mA, IT == lA
VD- GOV, IT - lA
VD == GOV, IT == 30A
VD - 100V, IT - lA
VD == 100V, IT == 30A

ns

25
-

ns

20

(Note 1)
(Note 1)

-

ns

0.8

2.0

p.S

IT

U.j

0.5

p's

IT - lA, IR - lA, RGK _ lK

0.02
0.01
20

0.05

O.G
0.2
10
1.1
30
0.01
2.0
0.4

-

p's
p.A
p.A
mA
V
V

200
1.5

fJA
V

IG == lOmA, IT == lA
VDRM - Rating, RGK _ lK, T _ 25°C
VDRM == Rating, RGK == lK, T == 125°C
(Note 2)
VRRM - 30V, RGK - lK
VD - 5V, RGS - lOOn, T _ 25°C
VD == 5V, RGS == lOon, T == 125°C
VD - 5V, RGS - 10K
IT _2A
VD - 30V, RGK _ lK
VGR - 5V
VD - 5V, RGK _ lK, T _ 25°C
VD == 5V, RGK == lK, T == 125°C

1.0

U.l

100
10
0.75

-

Vlp.s

0.1
5.0

mA
mA
mA

-

== lA, IR == lA, RGK == lK

< 1%.

2. Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis.

Switching Speed VS, Current
GA/GB300 Series
1000 , - - - - - - - - , - - - - - , - - - - - - ,
Notes:

'"
.3

1. V0

::::::

Peak Current VS. Pulse Width
GA300 Series
~1000

....

Rated V DRM

2. TA = 25°C
3. 16 = 20mA
4. tD = 20ns typically for all types

Blocking Voltage may be applied
immediately after current pulse

'-'

independent of anode current.

;::

"'....i':

"'

o

Z

(/)

<3

.os~y
.1%

Q,

10

t:=::::;==----t""==----',i-----j

I

r--:::::::-

= 75°C.

.01 % . . . L.OO5%

"~

-'
~

termination.

2. TA

100

(/)

ir

= 125°C.

graph at T,

'"

"''"

:J

"' 100 1 - - - - - + - - - - - + - - - - - - 1
:;;;

a:

Notes: 1. Data based on On-State Voltage

Z

"'>;::

10 .5%.....1'

;::

1%~

"'
"''"

50/.::::),

lrDuty Cycle

= .0001% or less

~ t---

-=

Q,

1

.1

10
IT - ANODE CURRENT (A)

UNITRODE CORPORATION. 5 FORBES ROAD
LEX INGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

10%.

I

L -________L -________l -______- - - '

].

100

1

.1

10-48

10
Tp - PULSE WIDTH (#s)

100

PRINTED IN U.S.A.

GA300, GA300A, GA301. GA301A
GB300, GB300A, GB301, GB301A

Peak Current VS. Pulse Width
GB300 Series

Peak Current vs. Pulse Width
GB300 Series

~1000 , - - - - - - - , - - - - - - , - - - - - - ,

~1000

....z

Notes: 1. Based on On~State Voltage
graph at T,
125°C.
Blocking Voltage may be applied
immediately after current pulse

....

=

z

OJ

'"'"

::J
U

10/:~

termination.
.5%, 2. Tc
75°C.

OJ

!;( 100

....

=

~

'"z

'"'"

1

::J
U

5%_-

'"L:i

'"z

> 10

'"
'"">
'"

::::::

20%-'"

OJ

o
«

~

10%

"-

50%--"'"

~

>=
>=
OJ

0:

'"0:

>=

-+_____-!

OJ

....~ 100

.........-Duty Cycle = .1% or less

~

o

Notes: 1. Based on Qn·State Voltage
graph at T, = 125°C.
Blocking Voltage may be applied
immediately after current pulse
termination.
2. TA = 75°C. _ _ _

OJ

10
5%
10%

a.

"OJ

I

I

.1

.1
Tp -

10
PULSE WIDTH <"s)

50%

J-

1
100

1
.1
Tp -

100

10
PULSE WIDTH ("s)

III
on-State Voltage VS. Current
GA/GB300 Series

Surge Rating
GA/GB300 Series

~
~1000

100

Notes,

'"'"
0:
::J
U

5:

s"''"

....

z

OJ
0:
0:
::J
U
OJ

10

Z

f-

~

100

Non~Repetitlive Peak curr~

o

'L:ia."

....
«
....

1. Blocking Voltage may not be
applied for O.ls atter termination
of surge pulse as junction
temperature will ereed 125°C.
2. TA = 75°C.

'"
>

'"z

>=

~

0

I

10

"-

'"0:

.:

Z

o
z
I

.1
.1
VTM

-

10
ON-STATE VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

1

.1

100

Tp -

10-49

10
PULSE WIDTH ("s)

100

PRINTED IN U.S.A.

ID100-1 D106

SCRs
.5 Amp, Planar
FEATURES

DESCRIPTION

•
•
•
•

This Data Sheet describes Unitrode's line of hermetically sealed industrial SCRs
designed for low-voltage, low-current sensing application. The 10100 Series is
packaged in a TO-18 metal case with Unitrode's unique oxide passivated
junctions, offering the highest degree of reliability and parameter stability for
any device in its price range.
Typical applications include lamp driving, relay driving, sensor, pulse-generating
'and timing circuits.

Voltage Ratings: to 400V
Maximum Gate Trigger Current: 200!,A
Hermetically Sealed TO-18 Metal Can
Planar Passivated Construction

ABSOLUTE MAXIMUM RATINGS
ID100

ID10l

Repetitive Peak Off-State Voltage, VDRM .
.. 30V ........ GOV..
Repetitive Peak Reverse Voltage, VRRM
.. 30V ....
60V .
On-State Current, IT
7S'C Ambient
100'C Case
Repetitive Peak On-State Current, ITRM .
Peak One Cycle Surge (Non-Rep.) On-State Current, I TSM
Peak Gate Current, IGM .
. ......... .
Average Gate Current, IG(Av) .. .
Reverse Gate Voltage, VGR .... .
Storage Temperature Range .
Operating Temperature Range
H.H

H

•

ID102
H

••

ID103

100V..
. lS0V...
100V ..... lS0V
H.

ID104

ID105

ID106

. 200V.
200V.

300V
30ov.

. ... 400V
400V

2S0mA

O.SA.

•••••••••••••••••••••••••••••••••

6A ..
'" up to 30A
... 2S0mA ..
... 2SmA ."
. .. 6V..
....................................
... -6S'C to +lS0'C
-WC to +12S'C ........
H

•••••••••••••••••••

H

H

••• H

••••••

............ •

MECHANICAL SPECIFICATIONS
10100-10106

A
B
C
D

INCHES
.178-.195 DIA.
170- 210
5 MIN
209- 230 DIA.

E

.017 ± '88~

F
G

.020 MAX.
100:1:.010 DIA.

g:~.

H

.041±.OO5

J

.028-.048

10-50

TO-IS

MILLIMETERS
4.52-4.95 DIA
431-5.33
1270 MIN.
531-5.84 DIA.

.432 ±

:8~~

508 MAX
2 54t.254 DIA
1.O4±.127
711 1.22

~UNITRODE

10100-10106
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

Min.

IDRM

-

Reversing Current

IRRM

-

Gate Trigger Current

IGT

-

Off-State Current

Typical

Max.

Units

Test Conditions

5.0
10.0
10
15
5.0

50
100
50
100
200
500
0.8
1.0

p.A
p.A
p.A
p.A
p.A
p.A
V
V
V
V
mA
mA
p's
p's
p's

VDRM - Rating, RGK _ 1K, T _ 125'C, 10100-10104
VDRM
Rating, RGK
1K, T 125'C, 10105-10106
VRRM - Rating, RGK - 1K, T _ 125'C, 10100-10104
VRRM
Rating, RGK
1K, T 125'C, 10105-10106
VD - 5V, RGS
10K
VD
5V, RGS
10K, T
-40'C
lOOn
VD - 5V, RGS
VD 5V, RGS
lOOn, T
-40'C
lOOn, T 125'C
VD 5V, RGS
ITM
1 Amp Pulse
RGK _lK
RGK
1K, T -40'C
IG
10mA, IT
lA, VD 30V
IT
IR
lA, RGK
1K, 10100-10104
IT
IR
lA, RGK
1K, 10105-10106

-

0.4
Gate Trigger Voltage

-

-

0.10

-

-

-

1.0

1.7
5.0
10.0

-

0.5
8.0
15.0

VGT

Peak On-State Voltage

VTM

Holding Current

IH

Turn-on Time

to,

Circuit Com mutated Turn-off Time

0.55

tq

-

-

-

=
=

=
=

=
=
=
=
=

=
=
=
=
=
=
= =
= =

=
=

=
=
=

=
=

=

=
=

Note: Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a
resistor, lOaD ohms or smaller, or other adequate bias is used.

Gate Trigger Current vs. Junction Temp.

Gate Trigger Voltage vs. Junction Temp.
1.4

~

~ 1.2

I-

UJ

Z

UJ

~

0:
0:

:J

o

(J

>

~~""6

0:

UJ

'"Q

0:

~~
f-..~~_....:

0:
I-

UJ

!<

~

=:::-:::.,.....

IUJ
I-

:i.'"

..J

~

.6

-"""

~~

«

'"
0..

.8

'"

ii:

-i

l-

I

.2

I

_1:ii-2

>ID
-25

-65

TJ

0

25

50

75

100

125

ISO

0
-65

JUNCTION TEMPERATURE ('C)

-

-25
TJ

1000

g~

20

... _500
o~

!2:

10

1-..1.

r--

:J
(J

'"

z
;:;
..J
o

1~=lKU

:i

-

t-- t--

r- ----,.....

J:

.5

I
_I

.2

.1

RGK

-25
T, -

"-

~

O:UJ

..J«

~

Iii

a:~
~ 0

20
10

'" "
" "'
"\

"- '" b

"'-

I~

r-.. .........
125

150

. UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

b

l

RGK

-25
TJ

10-51

= Rjted~fRM
= 10011

RGK

I"- ~=
1
-65

JUNCTION TEMPERATURE ('C)

Vo

"t'--.

,,0:

100

ISO

RGK -

>-

75

125

i"-- r'-.:---,lKD

_.",

50

100

. . . . t'--.

:CUJ

25

75

~ ...... r-,

(JI-

= 10Kn

I~

.05
-65

-

~ ~ 100
t: ~ SO

r---- ............

(J

ii:

i::

~ ~200
~~

-

100!!

50

dv/dt vs. Junction Temp.

50

RGK -

25

JUNCTION TEMPERATURE ('C)

-

Holding Current vs. Junction Temp.

0:
0:

Vo = 6V
~ t.:S

r..;::

.4

(J

ii:
>
I-

>

UJ

.;;:::.

Rated Vo

-

25

50

75

100

lOKn

l

I

125

150

JUNCTION TEMPERATURE ('C)

PRINTED IN U.S A

10100-10106

Gate Pulse for Turn-On vs. Pulse Gate Current
10
1. IT = lA, Vo

\

~~

:>-

2. T,

"\

:;;z
-0
z·
-z
:;;0:

..J::>

«I-

.5

(Jo:

~~
1-.,

.2

I~
-::>

.1

"I-

.05

go.
-.,
~C3

=

Circuit Commutated
Turn-Off Time VS. Junction Temp.
100

Rated v~

.1

\, -::::-

10105, 106

"

"

.......

.2

.1

.05 .1
.2
.5
2
10
iG - PULSE GATE CURRENT (rnA)

20

-65

10

VI

Z
0

.5

::>

.,

.2

I

.01
0.1

0.2
VT -

1

0.5

50

75

100

125

150

.50

(J

.20

I«
I-

.10

"!

"

.,
.,'"

.05

«
0:

>
« .02

I

~

I

.02

25

JUNCTION TEMPERATURE (OC)

0

1I

I

.: .05

-

z

I

.1

v

0:
0:

lL

0:
0:

S

I-

.,z

jI

I-

(J

~

is

~ 25°C ~/;:-l125od

.,Z
::>

\1"

Current VS. Power Dissipation

1

TJ

-25
TJ

Current vs. On State Voltage

.,

• 'l
'\.p..., \.q..
,,"'...........

1"-

.02

~

~

\1',

J"-.-

.01
.01 .02

. "'"

'\.p...,~\1-

~~~

"'-

.

!
~'" ~~~"'~'

= 25°C

1.0

_2.0

5.0

10
TYPICAL ON-STATE VOLTAGE (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

.01

~--+-----+----t--~----~----r---~

.005 L----L-----'----.J.---'------,L---c'::----="
.01
.02
.05
.10
.20
.50
1.0
2.0
W- MAXIMUM ON-STATE
POWER DISSIPATION (W)

20

10-52

PRINTED IN U.S.A.

SCRs

10200-10203
10300-10301

1.6 Amp, Planar

FEATURES

DESCRIPTION

•
•
•
•

This Data Sheet describes Unitrode's line of hermetically sealed industrial SCRs
designed for high-voltage, medium-current control applications. The Series is
packaged in a TO-39 metal case with Unitrode's unique oxide passivated junctions
to ensure reliability and parameter stability.
Typical applications include relay equipment, motor controls, process controllers
and pu Ise generators.

Voltage Rating: to 200V
Max. Gate Trigger Current: 200I'A
Hermetically Sealed Metal Can
Planar Passivated Construction

ABSOLUTE MAXIMUM RATINGS
ID200

ID201

Repetitive Peak Off-State Voltage, VDRM .
50V
Repetitive Peak Reverse Voltage, VRRM
50V .
Non-Repetitive Peak Reverse Voltage, VRSM «5ms)
75V....
On-State Current, IT(RMS)
70'C Case
75'C Ambient
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM
Repetitive Peak On-State Current, ITRM
Rate of Rise of On-State Current, di/dt
I't (for times> 1.5 ms) .
Peak Gate Current, IGM
Average Gate Current, IG(Av) .
Reverse Gate Voltage, VGR ..
Storage Temperature Range
Operating Temperature Range

ID202

ID300

ID203

ID301

..... 300V ............ 400V
l50V
.... 200V .....
l50V
... 200V .. ...... 300V .............. 400V
.. 500V
225V........... 300V ..... . ..... 400V..

lOW ....
.... lOW.
. l50V

1.6A ..
450mA ..
l5A .
up to 30A ...
lOOA/l's
O.83A's ..
.. 250mA
... 25mA ...
. ......... 6V .. .
-WC to +150'C .
... -40'C to +11O'C ........................................... .

MECHANICAL SPECIFICATIONS
10200-10203

B [ ClfcE

l

Il~
-

---

AJ

F

Z

45'

10300-10301

mm

CATHODE
305- 335

~",3'/

335-370
240-260

,/

020-030
GATE

G

1270 MIN

5 MIN
017 ±

gg~

200
100

ANODE

775-851
851-940
635-660
25-76

03l:tOO3

029-045
100

10-53

432

±

TO-20SAD (TO-39)

A

g~~

508

'54
79:1:08
74-114

254

~UNITRDDE

,

I D200-1 D203, 1D300-1D301
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

Typ.

Max.

Units

-

-

10
100
10
100
200
500
0.8
1.0

",A
p.A
p.A
",A
",A
",A
V
V
V
V
mA
mA
mA

VDRM Rating, RGK lK, T 25'C
VORM Rating, RGK lK, T 1l0'C
VRRM
Rating, RGK
lK, T 25'C
VRRM
Rating, RGK lK, T llO'C
VD 5V, RGS 10K, T 25'C
VD 5V, RGS 10K, T -40'C
VD 5V, RGS lOOn, T 25'C
VD 5V, RGS lOOn, T -40'C
VD 5V, RGS lOon, T 1l0'C
IT 4 Amp Pulse, T 25'C
RGK - lK, T 25'C
RGK lK, T -40'C
RGK = lK, T 1l0'C

V/",s

VDRM

Off-State Current

10RM

Reverse Current

IRRM

Gate Trigger Current

IGT

On-State Voltage

VGT

0.4
0.5
0.2

Peak On - Voltage

VTM

-

IH

0.3
0.4
0.2

Holding Current
Off-State VoltageCritical Rate of Rise
Turn-on Time
Circuit Commutated
Turn-off Time

dv/dt
t
tq

Test Conditions

Min.

-

5

10
0.52
0.7

0.7
-

-

2.2
3.0
6.0

1.0

-

-

40

20

",s
",5

=
=
=
=
=
=
=
=
=
=
=

=
=
=
=
=
=
=
=

=
=
=
=
=
=
=
=
=
=

=
=
=
=

= Rated, RGK =lK, T =1l0'C
IG =10mA, IT =I ,Vo =30V, T =25'C
IT = iR =lA, RGK =lK, T =25'C

Note: Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a resistor, 1000 ohms or smaller, or other adequate bias is used.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (71'0),326-6509 ~ TELEX 95-1064

10-54

PRINTED IN U.S.A

U13T1-U13T2

PUTs
Planar, TO-18 Hermetic

FEATURES

DESCRIPTION

•
•
•
•
•
•

The Unitrode hermetically sealed TO-18 metal can series of programmable unijunction
transistors feature blocking voltages to 100V, the highest available to designers. These
PUTs are functionally equivalent to standard unijunction transistors, with the added
advantages of programming versatility. External resistors can be added to program
~, RBB , Ip and I" depending upon your design requirements. All units are fully planar
passivated. This series features a hermetically sealed TO-18 package for optimum
reliability in all environmental conditions. Applications include pulse and timing
circuits, SCR trigger circuits, relaxation oscillators, and sensing circuits. For further
application information see Unitrode's Application Note U-66.

Voltage Ratings: to 100V
Maximum Peak Current: 150nA
Valley Current: as low as 25 p.A
Low Forward Voltage Drop
Nano-Amp Leakage
Hermetically Sealed TO-IS Metal Can

ABSOLUTE MAXIMUM RATINGS
40V
.40V

Anode-to-Cathode Forward Voltage, VAK
Anode-to-Cathode Reverse Voltage, VAKR
Gate-to-Cathode Forward Voltage, VGK
Gate-to-Anode Reverse Voltage, VGAR .
Gate-to-Cathode Reverse Voltage, VGKR
Peak Recurrent Forward Current
10 P.s 1% Duty Cycle .
100 p'S 1% Duty Cycle
Power Dissipation
25'C Ambient
Derating Factor
Storage Temperature Range
Operating Temperature Range

40V
40V
5V
.. 8A
..5A
.400mW
3.2mW/'C
-55'C to +150'C
. -55'C to +150'C

MECHANICAL SPECIFICATIONS
U13T1·UI3T2

A

S

C
D

E

GATE CONNECTED TO CASE

INCHES
178-.195 DIA.
170-.210
.5 MIN.
.209-.230 DIA.

.017 ± :~~

81~'

F
G
H

.020 MAX
100:1:.010 DIA.

J

028- 048

.041:1: 005

10-55

TO-IS

MiLlIMETERS
4.52-4.95 DIA.
4.31-5.33
12.70 MIN.
5.31-5.84 DIA.

.432 ± :~~
.508 MAX

2.54::1:.254 DIA
1.04:1: 127
.711-1.22

~UNITRODE

U13T1·U13T2

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
U13T2

U13Tl

Symbol

Fig.

Min.

Max.

Min.

Max.

Units

Peak Current

Ip

1

S
2

-

1.0
O.1S

p.A
p.A

Valley Current

Iv

1

70
-

2S

-

25

p.A
p.A

Test

-

SO

-

Vr

1

0.2
0.2

0.6
1.6

0.2
0.2

0.6
0.6

V
V

Gate-to-Anode Leakage

IGAO

2

10
100

nA
nA

I GKS

3

100

nA

Forward Voltage

VF

4

-

10
100

Gate-to-Cathode Leakage

-

loS

V

Vo

S

6

tr

S

Offset Voltage

Pulse Output Voltage
Pulse Output Rate of Rise

-

100
1.S

-

:L

V

80

nS

1

VF
2

Vv
Ip

Iv

IF

c) Characteristic Curve

b) Equivalent Test Circuit

a) Typical Circuit

vT =vp -vs

Vs

:=.V=~
s
R +R

R2

-

v,

G

Vs

C

-

80

0::
'E~]'
A

6

Test Conditions

= 10k, V, = lOY
=1 Meg.
RG = 10k, V, =10V
RG =1 Meg.
RG = 10k, V, = lOY
RG = 1 Meg.
T =2SoC, V, = rating
T = 7SoC
V, = rating
IF = SOmA
RG
RG

Figure 1

T~

1:-1

Figure 2

Figure 4

Figure 3

+20V

R,
16K

Vs
6V

R,
27K

.6V

~=:...:..c

_ _ _ _ _ _ _-+

Figure 5

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

10-56

PRINTED IN U.S.A.

SWITCHING & GENERAL PURPOSE DIODES

11-1

III

11-2

PRODUCT SELECTION GUIDE

SWITCHING AND GENERAL
PURPOSE DIODES

I

SWITCHING

Type

Reverse
Voltage
(V)

Average
Forward
Current
(mA)

IN4453
IN4154
11'1251*
IN4152
IN445Q
IN4451
'lN4452
.·lN4444
IN3064"*
IN4532*""
IN4534***
1N4151
IN4153!"·
11'44305
.. 11'44446
IN4447
iN4448
IN4449 ,
IN3600 lO **
IN4149 ....••.
IN41S0"""
IN4454***
IN4500***;
IN4607
IN662*
IN663*
.,
,'. ··11'1914""*,
lN4S31*iIo* .
IN4148***""
IN3Q70**>
lN493S"''"' "

30
35
40
40
40
40
40
70
75
75
75
75
75
75
75
75
75
75
75
75
75
75
80
85
100
100
100
100
100
200
200

200
150
75
150
200
200
200
200
75
125
150
150
150
150
150
150
150
150
200
200
200
200
300
400
40
40
75
125
200
100
150

.

Forward
Voltage
(V)
.51·.63 @ O.lmA
1.0 @ 30mA
1.0 @ 5mA
.49-.52 @ O.lmA
.42-.54 @ O.lmA
.4-.5 @ O.lmA
.42-.54 @ O.lmA
.44-.55 @ O.lmA
1.0 @ 10mA
1.0 @ 10mA
.74-.88 @ 20mA
1.0 @ 50mA
.49-.55 @ O.lmA
.5-.575 @ .25mA
1.0 @ 20mA
1.0 @ 20mA
1.0 @ 100mA
1.0 @ 30mA
.54-.62 @ lmA
1.0 @ 10mA
.54-.62 @ lmA
1.0 @ 10mA
.64-.72 @ lOmA
1.1 @ 400mA
1.0 @ 10mA
1.0 @ 100mA
1.0 @ 10mA
1.0 @ 10mA
1.0 @ 10mA
1.0 @ 100mA
1.0 @ 10mA

Reverse
Recovery
Time
(os) ..

Junction
Capacitance
(pF)

2
150
2
4
10
50
7
4
4
4
2
2
2
4
4
4
4
4
4
4
2
6
10
500
500
5
5
4
50
50

30
4
2
4
6
30
2
2
2
2
2
2
2
4
2
4
2
2.5
2
2.5
2
4
4
3
3
4
4
4
5
5

Ell

GENERAL PURPOSE

. 'Reverse
Voltage
Type

lN456
IN457*
.- IN483B**
11'1458*
IN3595***
IN459*
lN643*
IN485B**
IN64S ....
IN647 ....

"

Average

(V)

Forward
. Curretlt ;
(rnA)·

30
70
80
150
150
200
200
200
270
480

90
75
200
55
150
40
40
200
400
400

.'
"

Forward
Voltage
N)
1.0 @40mA
1.0 @20mA
1.0 @ 100mA
1.0 @7mA
.83-1.0 @ 200mA
1.0 @ 3mA
1.0 @ 10mA
1.0 @ 100mA
1.0 @400mA
1.0 @400mA

Reverse '.

Recovery

Junction
, rime.;,.,' .Capacita!'lce

. 

2

~

10

~

5

fZ

2

I

1.0

U

= +175"C >/

Typical Reverse Voltage vs. Reverse Current

II

1/

/

V II

.1

I

.2 .3 .4

005
00 1
02

TJ = 25"C

~

100"C

IX:
IX:

~ I--

--

./

=>

~

.s

W

1.0

~

1.-1-

I
.!!'

I

--

100"C

f-

--

V
10-

10
20

--

J

- -175"C

IX:

;.:::;;

50
100
280 260 240220200180 160 140 120 100 80 60 40 20 0

9 1.01.1 1.2 1.314 1.5

FORWARD VOLTAGE (V)

UNITRODE CORPORATION" 5 FORBES ROAD
LEXINGTON, MA 02173 " TEL. (617) 861-6540
TWX (710) 326-6509 " TELEX 95-1064

./

I

05
1

U

I

.8

l.--

1-

J

.5 .6 .7

VF -

~

25"C

/

I

j

V I

_

-65"C

/ 1/

!/

II I

.1

II /~ f-I- _

/

/

..!.L

.Ij "j 'I

f-;-

30V
70V
150V
200V

0.00 1
002

Y:: ~A'

TJ
;:- 100 t-t-Z
W 5

@100~

5~@

25V
60V
125V
175V

Typical Forward Voltage vs. Forward Current
1000

Peak
Reverse
Voltage

Reverse
Current
@TA = 150·C

VR - REVERSE VOLTAGE (V)

11-7

PRINTED IN U.S.A.

•

DIODE

JAN & JANTX 1N483B
JAN &JANTX IN485B

General Purpose
Low Current

FEATURES

DESCRIPTION

•
•
•
•
•

This Series is useful In low current rectifying applications for military, industrial and
commercial equipment.

Metallurgical Bond
Qualified to MIL-S-19500/118
Planar Passivated Chip
D0-7 Package
Non-JAN Available

ABSOLUTE MAXIMUM RATINGS, AT 25'C
1N483B
80V
70V

Reverse Breakdown Voltage
Peak Working Voltage

1N485B
200V
180V

=
=

Average Output Current @ TA
25'C
.. .................... ............ 200mA
TA 150'C
............................
SOmA
Current Derating 1.2 mAdc/'C from 25'C to 150'C and 1.0 mAdc/'C from
150'C to 200'C
................................
2 Amps
Surge Current, 8.3mSec ....................................
Operating Temperature Range
. -65'C to +200'C
Storage Temperature Range.
........ -65'C to +200'C

MECHANICAL SPECIFICATIONS
J & JTX 1N483B, 1N485B
A

=~II
h*
Tr- -t-c--j
B

A
B

C
D

12179

INCHES
085 - .125
.230 - 300
10 MIN
018 - .022

MILLIMETERS
2.16 - 3.17
5.84 - 7.62
2540 MIN.
.46 - .56

11-8

O::D
_UNITRODE

JAN & JANTX 1N483B & 1N485B
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Forward Voltage
@ l00mAdc, 8.Smsec
dc=2% MAX.

Reverse

Reverse

Reverse

Type

Current
@2S'C

Current
@25'C

Current
@ lSO'C

1N483B
1N485B

25nA@70Vdc
25nA @ 180Vdc

100 I'A(pk) @ 80V(pk)
100 I'A(pk) @ 200V(pk)

5.0 I'A @ 70Vdc
5.0 I'A @ 180Vdc

1.0V(pk)

Reverse Voltage vs. Reverse Current
Forward Voltage vs. Forward Current
1000

/- ;,-'AA
V; "/ A

=<

.§ 100 f- f- TJ
f-

Z

II

UJ

/

10

I
II

0:

~
a:
o

-"

.1

f-

II

/
V I

/

05
01
.2

z

uJ
0:
0:

loboc

::J

u

I

k-"

-

f--

1.0

>
UJ

2

UJ

./
f-- f- l-

I

)
175'C

10
20 ~

f - 1---

-

V

..,/

50
100
140 130 120 liD 100 90 80 70 60 50 40 30 20 10 0
V, - REVERSE VOLTAGE tV)

I

(O~

---l.~

.-1-

e-

0:

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.31.4 1.5
V, - FORWARD VOLTAGE tV)

Production
Process
1. Raw Material
2. Factory
Processing

--..,/

100'C

.5

UJ
0:

-"

1

f
I

./

= 25'C


"''"

0.1
.2

-"

10
20

~

/

I

-I

---l~.

f--

L
100'C

-- ---

.5
1.0

V
f,.---

L
17S'C

5

-

_I-

..- , / '

I-

50
100
140 130 120 110 100 90 80 70 60 50 40 30 20 10 0
V. - REVERSE VOLTAGE (V)
(% OF PIV)

J

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.31.4 1.5
V, - FORWARO VOLTAGE (V)

Production
Process
1. Raw Material
2. Factory
Processing

z

./

I--- i---

I

()

II

/
II

.02

-'I-"

II 1/- f---f r- 2S'C
II

~

I

T J =25'C

0.01

f- r- -6S'C

V

I

.005

Vj I I

Z

~

0.001
.002

/. v. A

1000

Inspection Lot
Formed at
Final
Assembly
Operation

*100 Percent Process
Conditioning
1. High-Temp Storage
2. Temp Cycling
3_ Hermetic Seal Tests

-

*100 Percent Burn-In
Inspection Tests
to
Verify LTPD
Group A
Group B

1. Measurement of

...

Specified Parameters
2_ Burn-In
3_ Measurement of
Specified Parameters
to Determine Delta

---

*Order of the tests in the blocks shall be performed as shown.
Order of procedure diagrams for TX types only.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

11-13

PRINTED IN U.S.A.

II

COMPUTER DIODE

JAN, JANTX, IN914
JAN, JANTX, JANTXVIN4148
JAN, JANTX, JANTXV IN4148-1
JAN, JANTX, JANTXV IN4531

General Purpose
Switching
FEATURES·

DESCRIPTION

•
•
•
•
•

This series is very popular for general
purpose switching applications in
electronic equipment

Metallurgical Bond
Qualified to MIL-S-19500/116
Planar Passivated Chip .
DO-34 or DO-35 Package
Non-JAN Available

ABSOLUTE MAXIMUM RATINGS, AT 25°C
Reverse Breakdown Voltage ................................................. 100V
Peak Working Voltage ........................................................ 75V
Average Output Current, IN914 .......................................... 75mAdc
IN4148 ....................................... 200mAdc
IN4148-1 ..................................... 150mAdc
IN4531 ....................................... 125mAdc
Surge Current, 8.3ms
................................................... 500mA
Operating Temperature Range ................................... -65°C to + 175°C
Storage Temperature Range ..................................... -65°C to +200°C

MECHANICAL SPECIFICATIONS
J, JTX IN914
J, JTX, JTXV IN4148
J, JTX, JTXV IN4148-1
J, JTX, JTXV IN4531

A

..L

D

=911
~=rF
T~ --+- c--l
B

J.JTX IN914
J JTX & JTXV IN4148 ·1

J JTX & JTXV IN4531
INCHES

INCHES

MILLIMETERS

.045 - 065

1.14 - 1.65

A

056 - .075

1.42 - 1.90

B

.080 - 110

2032-279

B

.140 - .180

355 - 4 57

C
D

4/82

MILLIMETERS

A

10 MIN.
.018 - .022

25.40 MIN.

C

.46 - .56

D

1.0 MIN
.018 - .022

25.40 MIN
.46 - 56

11-14

~UNITRDDE

J, JTX lN9l4
J, JTX, JTXV, lN4l48-lN4l48-l
J JTX JTXV 1 N453l

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Peak
Reverse

Reverse
Current
@2S'C

Reverse
Current
@2S'C

25nAdc
@
VR = 20Vdc

5.01lAdc
@
V.=7SVdc
Foward

Forward

Reverse

Forward
Voltage

Recovery

Recovery

Recovery

Voltage

Time

Time

Capacitance

20ns
@
IF = 50mAdc

5ns
@
IF= IR=lOmA
Rl = 100 ohms

VR=OV, f= 1 MHz
V'ig = 50mV (pk-pk)

@2S'C

Reverse
Current
@lSO'C

Reverse
Current
@l50'C

lOOIlA (pk)
@
VR = 100V (pk)

50llAdc
@
VR =20Vdc

lOOIlAdc
@
VR= 75Vdc

Current

4.0 pF@
S.OV (pk)
@
IF=50mAdc

1.0Vdc
@
IF = 10mAdc

2.8 pF@
VR= 1.5V, f = 1 MHz
V,;g = SOmV (pk-pk)

Reverse Voltage vs. Reverse Current
Forward Voltage VS. Forward Current

0.001 ..-.-.-.-,-...,.---r-o"-T--r---,r-r-.--v--,
.002I-H-1I-+--+1+-1-j--t-IIH-1-:;;o/
u 125mA--

r'\i\

Cl

0:

;:

.s<-

75

::>

..'"

2pF
@
VR : 0 Vdc, f: 1 MHz
Vsig : 50mV (pk to pk)

Average Rectified Current vs.
Ambient Temperature for
lN4454,·1 and lN4532

Average Rectified Current vs.
Ambient Temperature for lN3064

<-

Capacitance

4ns
@
IF : I. : 10mAdc
RL : 100 ohms
c:=; 3pF

11-17

PRINTED IN U.S A.

COMPUTER DIODE

JAN, JANTX IN3070
JAN, JANTX IN4938

Switching

FEATURES
• Double-plug Construction
• Qualified to MIL-S-19500/169
• Available in 00-7 or 00-3.5 package

DESCRIPTION
Double-plug construction affords integral
positive contact by means of a thermal
compression bond. Moisture free stability
is ensured through hermetic sealing. The
coefficients of thermal expansion of the
glass case and the dumet plugs are
closely matched. Hot solder dipped leads
are standard.

ABSOLUTE MAXIMUM RATINGS, AT 25°C
Reverse Breakdown Voltage _................................................... 200V
Steady-State Forward Current at (or below) 25°C Free Air Temperature .......... 150mA
Peak Surge Current, lsec ..................................................... 500mA
Peak Surge Current, lms ......................................................... 2A
Continuous Power Dissipation at (or below) 25°C Free Air Temperature ........ 250mW
Operating Temperature Range ...................................... -65°C to +200°C
Storage Temperature Range ........................................ -65°C to +200°C

MECHANICAL SPECIFICATIONS

J, JTX IN3070
J, JTX IN4938
A

J..

D

=~ II
~=r~=
TI- 8 -+- C'-1
J JTX lN4938
INCHES

INCHES

A

065 MAX

165 MAX

A

8

.155 MAX.

394 MAX.

8

C
0

4/82

J JTX lN3070

MILLIMETERS

1.0 MIN
020

254 MIN
0.51

C
D

MILLIMETERS

0.085 MAX.

2159 MAX

.180 - 0.220
10 MIN

4.572 - 5 588
25.4 MIN.

018 - 0022

0457 - 0.559

11-18

~UNITRDDE

JAN, JANTX IN3070
JAN,.JANTX IN4938
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Type

IN3070
IN4938

Maximum Reverse Current
@25°C
@ 150°C

Maximum Forward
Voltage

Maximum
Capacitance

Maximum Reverse
Recovery Time

IVdc
@
IF = 100mAdc

5pF
@
V. = 0, f = IMHz

50ns
@
IF = 30mA
I. = 30mA
I.Ec = ImA

100pAdc
@
175Vdc

O.lpAdc
@
175Vdc

Steady-State Current vs.
Free Air Temperature
180

:<
&150

I"~

I-

iE

'"'" 120
u
:::l

'\

D

~

~

90

fi:

'"

I-

>'"
"! 60
>
D

;:5
~

J,

30

o

o

25

50

"

'"

100

'\'\.
150

'"

III

200

T,-FREE AIR TEMPERATURE C'C)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

11-19

PRINTED IN U.S.A.

JAN, JANTX, JANTXV IN3595

COMPUTER DIODE
150 rnA, Switching

DESCRIPTION
A very useful device for medium current
switching applications_

FEATURES
• Metallurgical Bond
• Qualified to MIL-S-19500/241
• Planar Passivated Chip
• 00-7 Package
• Non-JAN Available

ABSOLUTE MAXIMUM RATINGS, AT 2SoC
Peak Reverse Voltage ____ . _..... _.. _.. _............. _................ __ .. _..... _.. _........ __ .................. 125V
Reverse Breakdown Voltage ..... _.............................................................................. 150V
Average Output Current ....................................................................................150mAdc
Surge Current, 15 ............................................................................................500mA
1j15 ...............................................................................................4A
Operating Temperature Range ...................................................................... -65·Cto +150·C
Storage Temperature Range ........................................................................ -65·Cto +200·C

MECHANICAL SPECIFICATIONS
JAN, JANTX, JANTXV 1N3S95

00·7

A

..l..

D

=~II
~*
Tr-- B --t-C-j
A
B

C
D

12/79

INCHES
.092 - .130
.130 .300
1.0 -1.5
018 - .022

MILLIMETERS
2.37 - 3.30
3.30 7.62
2540 - 38.10
46 - .56

11-20

~UNITRODE

JAN, JANTX, JANTXV IN3595

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
VF,
IF = 100mAdc

Limits

VF,
IF = 200mAdc

Min

0.83Vdc

O.79Vdc

Max

1.00Vdc

O.92Vdc

Limits

lA,
VA = 125Vdc

lA,
VA = 30Vdc
TA = 125'C

Min
Max

1.0nAdc

VF•
IF = 10mAdc

VF,
IF = 5mAdc

VF,
IF = 1mAdc

O.74Vdc

O.65Vdc

O.60Vdc

O.52Vdc

0.88Vdc

O.80Vdc

O.75Vdc

O.68Vdc

lA,
VA = 125Vdc

IA.
VA = 125Vdc

C
VA = OVdc

trr
IF = 10mAdc

TA = 125'C

TA = 150'C

f = 1MHz

VA = 35Vdc

VF,
IF = 50mAdc

-

O.3~dc

-

O.5~dc

3.0~dc

-

-

8.0pF

3.0"S

Typical Reverse Voltage vs Reverse Current
0.001
.002

~

t-

z

OJ

!to
!to
::l

u

r

.005
0.01
.02

TJ = 25°C

I

I

.05
0.1
.2

- - 100o~

.5
1.0

!to

I

-

.E;

10

20

V

./

l- I-

'OJ

ffiG:;

I.d"""J

.-

III

J

17;C~ ~ -

50
100
280 260 240 220 200 180 160 140 120 100 80 60 40 20 0
VR - REVERSE VOLTAGE (V)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

11-21

PRINTED IN U.S.A.

COMPUTER DIODE

JAN, JANTX & JANTXV IN3600
JAN, JANTX & JANTXV IN4150
JAN, JANTX & JANTXV IN4150-1

200mA
Low Power, Switch ing

FEATURES
• Metallurgical Bond
• Qualified to MIL-8-19500/231
• Planar Passivated Chip
• 00-7 or 00-35 Package
• Non-JAN Available

DESCRIPTION
This series of switching diodes is useful in
many computer switching applications, for
both military and commercial systems.

ABSOLUTE MAXIMUM RATINGS, AT 25·C
Reverse Breakdown Voltage .................................................................................................... 75V
Peak Working Voltage .............................................................................................................. SOV
Average Output Current .................................................................................................... 200mA
Surge Current (lsec) ................................................................................................................ O.5A
(ll'sec) ... .... .... ......... ..... .... .... .... .... ... ......... ..... ...... ... ..... ...... ................ ... ..... ...... 4.OA
Operating Temperature Range .................................................................. -65·C to +175·C
Storage Temperature Range ...................................................................... -65·C to +200·C

MECHANICAL SPECIFICATIONS

J, JTX & JTXV1N3600

J, JTX & JTXV 1N4150, 1N4150-1
A

--1..

D

=1111I- ---+-l===r*
C --j

B

INCHES
A
B

C
D

12179

.078 - .107
.195 - .300
1.0 MIN.
.018 - .022

INCHES

MILLIMETERS
1.98 - 2.72
4.95 - 7.62
25.40 MIN.
.46 - .56

A
B

C
D

.056 - .075
.140 - .180
1.0 MIN.
.018 - .022

MILLIMETERS
1.42
3.55
25.40
.46

11·22

-1.90
- 4.57
MIN.
- .56

~UNITRDDE

JAN, JANTX & JANTXV IN3600, IN4150 & IN415!l-1
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Reverse

Breakdown
Characteristics

Forward Voltage

Forward Voltage

Forward Voltage

Forward Voltage

Forward Voltage

Voltage

VF4
IF=100mAdc
(pulse)

Vf§
IF=200 mAdc
(pulse)

BV
IR = 5.0 I'Adc

0.820Vdc
0.920 Vdc

0.870Vdc
1.00Vdc

Reverse

Reverse

Recovery Time

Recovery Time

Conditions

VF,
IF=l mAdc

VF2
IF=10 mAdc

VF3
IF =50 mAdc
(pulse)

Minimum
Maximum

0.540 Vdc
0.620Vdc

0.660 Vdc
0.740Vdc

0.760 Vdc
0.860 Vdc

Characteristics

Reverse Current

Reverse Current

Junction Capacitance

Conditions

IR
VR=50Vdc

I.
V.=50Vdc
TA = 150°C

C
V.=O
F=l MHz
V,;g = 50 mv (p-p)

Maximum

O.1I'Adc

100l'Adc

2.5 pf

t rr ,

4 nsec

g

100

I<

50

'"~

20

<.>

10

0:

5

~

2

~

o

«

~

I

_"

.5
.2

.1

r-I-

o()

o()

l~fJ!

r-.&J~J 1Il/i?II Ii I

j-

-I-

II

I-r-I- t

r-I-

~

~

ffi

!

il

10 nsec

.005
~ -J5·c'b......,F..J.-.-=t---tI--t-t-tT1
om HHH-+ri-==+-+-·2S.b !--:
~ .02 t-HH'7't-+--+,~-+I--:P--t'9--t--t--t­
E .05 t-H-I'-t-,J,...-'f----+-+-+--+--t--t--t0:::
0.1 e-f-HI-7I<::...f-+-+--+-+-+-+-+-+-!

1

- -

II

6 nsec

0.001 r-r-lr-1r-1-r-r-,--,--,-,-,-,"T"'1
.002
L

v V t( __ I- 1--1--!
'/

t f,
IF = 200 mAde;
tp = 100 nsec;
t,=0.4 nsec

trrz

Reverse Voltage vs. Reverse Current

Typical Forward Current YS Voltage
500

-

Forward
Recovery Time

IF=I.=
IF=I.=
10 to 200 mAdc; 200 to 400 mAdc;
RL = 100 ohms
RL = 100 ohms

1000

:;: 200

75Vdc

j;j

.2t-H~--t-+--+-+-+-+--+--t--t--tI/~

r-

.5r-~~H-+-+-t-t-r-r-r-t-~

J2 fL

1.0f-I-L
f+-I+-+-+--H-+-+-I00

0:

I

I

~I-~t-fl r r- I-

S°hJ;:;JW~n*-:t~t.J...-'w
t).

'-- _-'-_1

100

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.31.4 1.5

140 130 120 110 100 90 80 70 60 50 40 30 20 10
VR - REVERSE VOLTAGE (V)
(% OF PIV)

v,- FORWARD VOLTAGE (V)

Inspection lots
lots proposed
for
formed at final
assembly operation I~
non-TX
(sealing)
types

I.....

10~~~~-+--t-T-~-+-+-+--t-~

20 r-1It'l+tH-+-+-t-t-r-t--175'c-~

Review of
Inspection tests to
verify lTPD
Groups A and B
I~
data for
Group A
accept or reject
Group B

1-+

0

Non-TX
Preparation
for
Delivery

t

,

lots proposed
for
"TX"types

100 Percent burn-in*
(reverse and forward bias tests)
1. Measurement of specified parameters

100 Percent process conditioning*
1. High-temp storage
2. Therma I shock
(glass strain)
3. Acceleration
4. Hermetic seal tests

....

2. Reverse bias
3. Measurement of specified parameter
to determire delta
4. Forward bias
5. Measurement of specified parameters
to determine delta
6. lot rejection criteria based on
rejects from the Reverse and
Forward bias tests.

t

Review of
Group Aand B
data for
lot accept
or reject

iTX
Preparation
for
Delivery

Order of procedure diagram for non-TX and "TX" types.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

-.

Inspection
tests to verify
lTPD
Group A
Group B

11·23

PRINTED IN U.S.A

Ell

Switching

IN4149, IN4151, IN4154
IN4446, IN4447, IN4448
IN4449

FEATURES
• Metallurgical Bond
• Planar Passivated
• DO·35

DESCRIPTION
This series offers Metallurgical Bonding
and is very popular for general purpose
switching applications.

COMPUTER DIODE

ABSOLUTE MAXIMUM RATINGS, AT 2SoC
1N4149
1N41S1
1N41S4
1N4446
1N4447
1N4448
1N4449
Peak Reverse Voltage ............... 75V ........ 75V ........ 35V ........ 75V ........ 75V ........ 75V ........ 75V ....... .
Average Rectified Current ............................................... 200mAdc .................................. .
Surge Current, 8.3 mS .................................................... 500mA .................................. ..
Operating Temperature Range ...................................... - 65'C to + 150'C ............................... .
Storage Temperature Range ........................................ - 65'C to + 200'C ............................... .

MECHANICAL SPECIFICATIONS
1N4149, 1N41S1. 1N41S4,
1N4446. 1N4447. 1N4448
1N4449

DO·3S

A

....L

D

=911
p=*
Tf- B+C-.j

12/79

A
B
C
D

INCHES
.065
.155
10 MIN
.020

MILLIMETERS
165
3.94
25.4 MIN.
.51

11·24

~UNITRDDE

lN4149, lN4151, lN4154
lN4446, lN4447, lN4448
lN4449
ELECTRICAL SPECIFICATIONS (at 2S'C unless noted)

Forward Voltage

Type

Peak
Inverse
Voltage

@ 10mA

1 N4149

75

1.0

-

1N4151

75

-

1N4154

35

-

1.0

-

1N4446

75

1.0

75

1.0

-

-

1N4447
1N4448

75

-

-

-

1N4449

75

-

-

@20mA

@ 30mA

--

@ SOmA

1.0

@ 100mA

-

S-

Z

w

a:
a:
u

/

::>

~

/

10

/

i~
I

V

TJ = +17S·C
100

I

10

_LL

Lt'
1
.1

.2

I'-

V l£- f

t--

50

4pF

4nS

50

4pF

2nS

25 100

4pF

2nS

25

20

50

4pF

4nS

20

25

20

50

4pF

4nS

-

-

1.0

20

25

20

50

4pF

4nS

1.0

-

-

20

25

20

50

2pF

4nS

Typical Reverse Voltale
0.001
.002

lf-

c- -6S·C

/

.02

V

Z .05
w
a: 0.1
a:

2S·C

100·C

::>

U

I

.2

j

J

i[

3 .4

5 .6 .7

I

I---' I-""
/

20

II

8 .9 1.0 1.1 1.2 1.3 I 4 1.5

,/

_

I

/I

H17S·C

v
VR -

11-25

III

..... L
I
V

Hj

-

,/

I-

140 130 120 110 100 90 80 70 60 so 40 30 20 10

FORWARD VOLTAGE IV)

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6S09 • TELEX 95-1064

:.-

.... f"'"

j

10

so
100

-

-

100·C

I
~

1'1

2slc

Reverse Current

:I

w .5
a: 1.0
w
>
w
a:
(/)

/ / i/

VI.

iJ =' +Js·c'

.005
_ 0_01

I

II

VF -

20
50

20

:;.-....-: ~ ~

V

25
50

25 100

Typical Forward Voltage vs Forward Current

f-

20
50

-

1000

<

Reverse
Reverse
Junction Recovery
Current
@ 1S0·C Capacitance Time
@ OV
VRiA
tRR

Reverse
Current
VRnA

0

REVERSE VOLTAGE IV)

PRINTED IN U.S A

IN4152, IN4305, IN4444

COMPUTER DIODE
Switching

FEATURES
• Metallurgical Bond
• Planar Passivated
• 00·35 Package

DESCRIPTION
This series offers Metallurgical Bonding and
is very popular for general purpose switching
applications.

ABSOLUTE MAXIMUM RATINGS, AT 2S'C
1N41S2
1N430S
1N4444
Peak Reverse Voltage ................................................................................................................................. 40V ............ 75V ............ 70V ..... .
Reverse Working Voltage ........................., ................................................................................................. 30V ............ 50V ............ 50V ...... .
Average Rectified Current ........................................................................................................................................... 200mAdc, ...................... .
Surge Current, 8.3 mS .................................................................................................................................................... 500mA ...... :................. .
Operating Temperature Range ........................................................................................................................... -65'C to +150'C .............. .
Storage Temperature Range ............................................................................................................................... - 65 'C to + 200 'C .............. .

MECHANICAL SPECIFICATIONS
1N4152, 1N4305, 1N4444

00·35

A

..1.

D

=~II
~=*
Tf--B -t-c-~
INCHES
A
B

C
D

12/79

.065 MAX
155 MAX,
10MIN,
,020

MILLIMETERS
1.65 MAX .
3,94 MAX,
25,40 MIN,
51

11·26

~UNITRODE

IN4152, IN4305, IN4444
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
Forward
Voltage
@ O.1mA

Peak
Inverse
Voltage
(V)

Type

Forward
Voltage
@O.25mA

Forward
Voltage
@ 1.0mA

Forward
Voltage
@2.0mA

min

max

min

max

min

max

min

max

Forward
Voltage
@10mA
min

Forward
Voltage
@20mA

Forward
Voltage
@100mA

max

min

max

min

max

1N4152

40

0.49

0.55

0.53

0.59

0.59

0.67

0.62

0.70

0.70

0.81

0.74

0.88

-

-

1N4305

75

-

-

0.505

0.575

0.55

0.65

0.61

0.71

0.70

0.85

-

-

-

1N4444

70

0.44

0.55

-

0.56

0.68

-

-

0.69

0.82

-

-

Reverse
Current
@ 150·C
VR
~

Reverse
Current

Junction
Capacitance
@
OV

Reverse
Recovery
Time
t"

Type

VR

(nA)

1N4152

30

50

30

50

2pF

2nS

1N4305

50

100

50

100

2pF

2nS

1N4444

50

50

50

2pF

7nS

50

«E

2

;::- 100
Z

w

5

:;J

2

0:
0:

U

o
0:
«

~

o

lL

I
_lL

0001
002

~r-+--J,iV)
-!,-UtP;!:/~16S~lI I I I

rl J
V /' f

,

il

10

5

/

2
10

/

5

/

'1

.1

I

/

,f

.2 .3

.4

/

1

I

I

5 .6

.7

~

I !

w

I

I

V

.5

w
>
W

1.0

I

_0:

--

./

V
I

I
I--

V

-I

10

I /

17S'C _

--

J......t'""'
I

",£ f-

50
I-100
140 130120110 100 90 80 70 60 50 40 30 20 10

I

V F -- FORWARD VOLTAGE (V)

V R -- REVERSE VOLTAGE (V)
(% OF PIV)

11-27

III

V

:

II
20

I I I I

I-- I--

100'C

I

1

...--r --I

/

0:

9 1.01 1 12 1314 1.5

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173· TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

en

0:

!

: i : I
8

05
01

U

:

,

1.0

./

2S'C

:;J

I I
I

---

02

0:
0:

t-

= -6S'C

001

IZ
W

,

i

II II

-

1-

,

--r--;---+-i100'C

-I. +-t-+-- r--

r005 r- r-TJ

/

~2S'C'

0.85

Reverse Voltage vs. Reverse Current

Forward Voltage vs. Forward Current
1000

-

PRINTED IN U.S A.

0

JAN, JANTX & JANTXV IN4153
JAN, JANTX & JANTXV IN4534

COMPUTER DIODE
150mA
Switching Diode

DESCRIPTION

FEATURES
• Metallurgical Bond
• Qualified to MIL-S-19500/337
• Planar Passivated Chip
• DO-34 or DO-35 Package
• Non-JAN Available

This device is particularly suited to
applications where tightly controlled
forward characteristics and fast recovery
time are important.

ABSOLUTE MAXIMUM RATINGS. AT 25°C
Reverse Breakdown Voltage ________ ........................................... 75V
Peak Working Voltage ......................................................... 50V
Average Output Current* ................................................... I50mA
Surge Current. Ills
........................................................ 2.0A
Operating Temperature Range ................................... _ -65°C to +200°C
Storage Temperature Range ...................................... -65°C to +200°C
"Derate O.86mAdc1"C for TA above 25°C.

MECHANICAL SPECIFICATIONS

J. JTX & JTXV lN4153
J. JTX & JTXV lN4534
A

..L

11 r==r{=
=11I-B+C-j
0

J- JTX & JTXV lN4534

A
B

C
0

4/82

INCHES
050 065
.080 - .120
10- 15
.018 - .022

MILLIMETERS
127 - 1.65
203-3.05
254-381
.46 - 56

A
B

C
D

J JTX & JTXV lN4153
MILLIMETERS
INCHES
056 - .075
142 - 1.90
140 - 180
3.55 - 4 57
2540
MIN
1.0 MIN
46 - .56
.018 - .022

11-28

[1J] UNITRODE

J, JTX & JTXV 1N4I53
J, JTX & JTXV IN4534

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Limit

VF1
IF = 100 p.Ade

VF2
IF = 250p.Ade

VFl
IF= 1 mAde

VF4
IF= 2 mAde

Vn
IF= 10 mAde

VF6
IF=20mAde

Min
Max

0.490Vde
0.550Vde

0.S30Vde
0.590Vde

0.590Vde
0.670Vde

0.620Vde
0.700Vdc

0.700Vde
0.810Vdc

0.740Vde
0.880Vdc

C

IR2

VR = 50V
TA = 150°C

IR

= 50V

VR = 0
= IMHz

tn
IF = IR = lOmAdc
RL = 100 ohms

Reverse
Breakdown
Voltage
IR = 5.0pAde

Limit

VR

Min
Max

-

-

-

-

75V

0.05pAdc

50pAde

2.0pF

4ns

-

f

Reverse Voltage vs. Reverse Current

Forward Voltage vs. Forward Current

0.001
.002

1000

..s

TJ

100

= 17S'C- -/

~-

tZ

//

UJ

0:
0:
::::l

~

1

'"0:
W

V, -

0:

-"

I

-

./
~

I

I
./
100'C

1.0

I--"'

5
10
20

100

---I~~

V

2sI'e

r-

...... 1-'
~

I

.5

50

.5 .6 .7 .8 9 1.01.1 1.2 1.31.4 1.5
FORWARD VOLTAGE (V)

Production
Process
1. Raw Materia I
2. Factory
Processing

VI

>
W

/ I

1 1

0.1
.2

u
w

/

.1 .2 .3 .4

.05

0:
0:

:J

/

0.01
.02

I-

zw

I

-"

/

-6S'C

25'C

/ / /

/

10

;t
.3

100'C

/

~

.1

J

/

10

0:

'"
'""-o

,..,.-: ~ ~ V
'/ /

1

ITJ l J 5 , J

.005

......-

1/
II

I--"'

_r-"'

_f--

I

V

~ f- f-

140 130 120 110 100 90 80 70 60 50 40 30 20 10 0
v, - REVERSE VOLTAGE (V)
(% OF PIV)

Inspection Lot
Formed at
Final
Assembly
Operation

* 100 Percent Process
Conditioning
1. High-Temp Storage
2. Temp Cycling
3. Hermetic Seal Tests

-

*100 Percent Burn-In

1. Measurement of

Inspection Tests
to
Verify LTPD
Group A
Group B

Specified Parameters

2. Burn-In
3. Measurement of
Specified Parameters
to Determine Delta

--

*Order of the tests in the blocks shall be performed as shown.
Order of procedure diagrams for TX types only.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

11-29

PRINTED IN USA.

III

IN4450, IN4451, IN4453

COMPUTER DIODE
Switching

DESCRIPTION
This series offers Metallurgical Bonding
and is very popular for general purpose
switching applications.

FEATURES
• Metallurgical Bond
• Planar Passivated
• 00-35 Package

ABSOLUTE MAXIMUM RATINGS, AT 25'C
1N4450
1 N4451
1 N4453
Peak Reverse Voltage ................................................................................................................................. 40V ............ 40V ............ 30V .... ..
Reverse Working Voltage ........................................................................................................................... 30V ............ 30V ............ 20V .... ..
Average Rectified Current ........................................................................................................................................... 200mAdc ...................... .
Surge Current, B.3 mS .................................................................................................................................................... 500mA ....................... ..
Operating Temperature Range ........................................................................................................................... - 65 'C to + 150 'C .............. .
Storage Temperature Range ............................................................................................................................... - 65 'C to + 200 'C .............. .

MECHANICAL SPECIFICATIONS
1 N4450, 1 N4451 , 1 N4453

A
B
C
D

12179

INCHES
065
155
10 MIN
.020

00-35

MILLIMETERS
1.65
3.94
25.4 MIN
.51

11-30

~UNITRDDE

IN4450, IN4451, IN44!:>.
ELECTRICAL SPECIFICATIONS (at 2S·C unless noted)
Forward
Voltage
@O.01mA

Peak
Inverse
Voltage
(V)

Type

Forward
Voltage
@O.1mA

min

max

min

40

-

-

1N4451

40

-

1N4453

30

0.43

1N4450

Forward
Voltage
@100mA

Forward
Voltage
@10mA

max

min

max

min

max

min

0.42

0.54

0.52

0.64

0.64

0.76

0.80

-

0.40

0.50

0.51

0.61

0.62

0.72

0.75

0.55

0.51

0.63

0.60

0.71

0.69

0.80

0.80

Reverse
Current
@ 1S0·C
VR
/lA

Reverse
Current

Forward
Voltage
@ 1.0mA

Junction
Capacitance
@
OV

Reverse
Recovery
Time
t"

Type

VR

(nA)

1N4450

30

50

30

50

4pF

4nS

1N4451

30

50

30

50

6pF

10nS

1N4453

20

50

20

50

30pF

-

~

a:
a:
o=>
o
a:

0.001
002

~

-

/' '/ V /f
TJ = + 17S'C ~ L / 1..4 -65'C
.

II

10

V /

io

/

LL

I

1.0

/

,1

.1

/

II

-j r-

005

,;

i1i

05

~

0.1

5

I

w

8!w
~
a:
I
.!!-

I

j

II I
.5 .6 .7

.8 .9

max

0.96

-

1.0

0.875

-

-

-

1.0

0.92

-

-

r- r- r-

I

I

./
~

TJ = 6S'C

--

1---/"

2S'C /" f-"""""
I

I

1/

V

.5

l00'C

1.0

~

..-

/"

J

10
20

J

II

-

~

~-

I
~
I
100
140 130 120 110 100 90 80 70 60 50 40 30 20 10 0

1.01.1 1.2 1.31.4 1.5

VF - FORWARD VOLTAGE (V)

UNITRODE CORPORATION, 5 FORBES ROAD
LEX INGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 ' TELEX 95·1064

min

.2

50

.2 .3 .4

max

~

/
il

/

min

~ O~~

2S'C

100'C

I

J

/

_LL

/ 1/ f

max

Forward
Voltage
@300mA

Reverse Voltage vs. Reverse Current

Forward Voltage vs. Forward Current
1000

;:: 100
Z
w 5

Forward
Voltage
@200mA

VR - REVERSE VOLTAGE (V)

11-31

PRINTED IN U.S A.

•

IN4452, IN4607, IN4608

COMPUTER DIODE
High Conductance

DESCRIPTION
This sedes offers Metallurgical Bonding
and is specifically designed for high
conductance switching applications
such as core memories.

FEATURES
• Metallurgical Bond
• Planar Passivated
• High Conductance
• 00-35 Package

ABSOLUTE MAXIMUM RATINGS, AT 25·C

IN4452

IN4607

IN4608

Peak Reverse Voltage ......................................................... 40V
85V
85V
Reverse Working Voltage ...................................................... 30V
50V
50V
Average Rectified Current ............................................................. 400mAdc ................. 500mAdc ..
Surge Current, 8.3 mS .................................................................... 1A .............................. .
Operating Temperature Range ............................................................. -65·C to +150·C ................ .
Storage Temperature Range ................................................................ -65·C to +200·C ................ .

MECHANICAL SPECIFICATIONS

IN4452, IN4607, IN4608

00-35

A

--.L

D

=911
Pi*
Tf---- ---+C ----j

B

A
B

C
D

12/79

INCHES
.065
.155
1.0 MIN.
020

MILLIMETERS
165

3.94
25.4 MIN
.51

11-32

~UNITRDDE

1N4452, 1N4607, 1N4608

ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
Forward
Voltage
@O.lmA
min max

Peak
Type

Inverse
Voltage

1N4452
1N4607
1N4608

40V
85V
85V

Type

Forward
Voltage
@ 600mA
min max

0.421
0.39
0.39

Forward
Voltage
@ 1.0mA
min max

Forward
Voltage
@lOmA
min max

0 .54 0.51 10.62 0. 60
0.50 0.50 0.60 0.61
0.49 0.50 0.60 0.61

Forward
Voltage
@ IOOOmA
min max

IN4452
IN4607
IN4608

Forward
Voltage
@lOOmA
min max

1

/' ~

500

<"
g

V V/
VV/

200

I- 100

Z

w

II:
II:

::::>
(.)

0

II:

20
10

«
3:
II:

Reverse
Current
@ IOO·C

Reverse
Current
@ ISO·C

VR

VR

30 150
50
100
50
100

50
25
50
25

/lA

/lA

/

0

/

i/

/

LL

I
LL

I

.5

II

1

I

:/:V

t"
50nS
IOnS
lOnS

.002

/

.005

1: 0.01
~

I-

Z

w

II:
II:

(.)

2

w

rn

.5

w
>
w

1.0
2

II:
II:

I

.02
.05
0.1

::::>

J
I

25"C

.....

,../

V

I

II

II:

10
20
50
100

5 6 7 .8 .9 1.0 1.1 1.2 1.3 1.4 1.5
V F - FORWARD VOLTAGE (V)
4

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

= 1 ;1

Typical Reverse Voltage vs Reverse Current

II

2 .3

=10

.001

/ J

I

Forward
Voltage
@SOOmA
min max

Reverse
Recovery
Time

Junction
Capacitance
@
OV
4pF
4pF

1

II / /

/

Forward
Voltage
@400mA
min max

1 -1-

Reverse
Current
VR
nA

!/;'(ii/i/l
/~~ ct' f?

50

Forward
Voltage
@3S0mA
min max

71 0 .83
100.72
.71 0.
0.74 0.87
1.0
OBI 0:95 0.71 0.74 0.85 0.81 0.93 0.84 0.96

Typical Forward Voltage vs Forward Current
1000

Forward
Voltage
@2S0mA
min max

(
L

-

--

~

,..
.......... i"'"

III
V

100"C

f-- ~

150"C

-~

I

,...... ~

140130120110 100 90 80 70 60 50 40 30 20 10
V R - REVERSE VOLTAGE (V)

11-33

0

PRINTED IN U S.A

COMPUTER DIODE

JAN & JANTX 1N4500

500mA

Switching Diode

FEATURES

DESCRIPTION

•
•
•
•
•

This device IS a fast switching, high conductance diode for military, space, high rei
and other systems.

Metallurgical Bond
Qualified to MIL-S-19500/403
Planar Passivated Chip
00-35 Package
Non-JAN Available

ABSOLUTE MAXIMUM RATINGS, AT 25'C
Reverse Breakdown Voltage
Peak Working Voltage ...... .
Average Output Current
Surge Current, lsec..
.. ................ .
l"sec ................ ..
Operating Temperature Range .
Storage Temperature R,.nge ....

.80Vdc
. ............ 75Vpk
......... 300mAdc

. ......................... O.SA
.. ....................... 4.0A
.................... -65'C to +175'C
.. ....... -65'C to +200'C

MECHANICAL SPECIFICATIONS
J & JTX 1N4500
A

-.L

0

=911
p=*
Tf--B -+-c~
A
B

C
0

12179

INCHES
060 - .107
140 300
1.0 MIN
018 - .022

MILLIMETERS
1.52-272
355 - 7.62
25.40 MIN
.46 - .56

11-34

~UNITRDDE

JAN & JANTX 1N4500
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)

Limits

VFI
IF = 250pAdc

VF2
IF= 1.0mAdc

VF,
F=10mAdc

VF4
IF=20mAdc

VFs l/
IF=300mAdc

mVdc
470
560

mVdc
520
600

mVdc
640
720

mVdc
670
770

Vdc

Minimum
Maximum

By

IR
VR = 75Vdc

IR =5pAdc

nAdc

Minimum
Maximum

pAdc

nsec

100

6.0

-

0.001
.002

/- /' /r

_

TJ =+175'C

V

V- I I

.005

'- --65'C

/ 1/ II- f -

....z

<:

.:\

25'C

....
zuJ

UJ

c:
c:

~

10

c:

~
c:

o...

100'C

/

/

I

UJ

I

I

/

'

.....

Lots proposed
for
non-TX
types

1-.

/'

./
I..--

I

~

/'

./

/

J

/
I
I--

5

/'

-- --

100'?

~-

i-

r
l/:r-l I

I

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.31.4 1.5
V, - FORWARD VOLTAGE (V)

Inspection lots
formed at final
assembly operation
(sealing)

-"

10
20

I

-+25,b

V

.5
1.0

---

V

.05
0.1
.2

c:
UJ
>
UJ
c:

I

5
50
100
140 130 120 110 100 90 80 70 60 50 40 30 20 10 0
V, - REVERSE VOLTAGE (V)
(% DF PIV)

I

II

0.01
.02

" .lMt!lr. V." 5(111
'I1tll1S:X;

PACKAGE STYLES

======~~========
A Style
Basic Diode

~

~

0E Style
Ribbon AXIal Leads

*0 Style
Insulated Stud

*C Style
Stud

B Style
Round Axial Leads

15

1.0

10

For UM4000. 6000 & 7000 Series

:',;.

:;~~ri@;:'" .

~.. T.~:i~t;
mA.Q'ifn.).()
4.0

.~

y

'i\

·Not available for UM6000, UM6600, UM6200,
For UM9600 Senes

Cup

Cup

Flange

Flange

UM960112

UM9605/6

UM9603/4

UM9607/8

Drawings are not actual size.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

12-4

PRINTED IN U.S.A

PIN DIODES

PRODUCT SELECTION GUIDE

For applications information, see PIN Diode Designers' Handbook and Catalog (PD-SOOB)
VOLTAGE RATINGS

600V

.,." ':8.OOV'.:.,;

',1QMV.

Series
UM4000
UM4300
UM4900
UM6000
UM6200
UM6600

lOOV

200V

j

j

j

j

j
j

j

j

j

j

j

UM7000

UM7100
UM7200
UM7300

j

/

I

j

j

I

j
j

j

I
j

I
I
I

400V

'

',\

I

/
j

I
I

I

12-5

j

I

I
I

ORDERING INFORMATION
Part numbers of Switching and High Power Attenuator PIN diodes
consist of the letters UM followed by four digits and one or two letters,
The first two digits indicate the diode series, the next two digits specify
the voltage rating in hundreds of volts, The remaining letters denote the
package style, Reverse polarity is available for C, and D, style and
denoted by adding second letter R,

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEl. (617) 86J.6540
TWX (710) 326-6509 • TELEX 95-1064

.,

'

i
I

For Example:

PRINTED IN US,.

1N5767 (5082 - 3080)SERIES
1N5957 SERIES

PIN DIODE

Features
• Useful attenuation from 1 I-IA to 100 rnA bias.
• Capacitance below 0.4 pF.
• Low distortion in switches and attenuators.
• Rugged Unitrode construction.
Description
The 1N5767 and 1N5957 PIN diodes are
based upon low capacitance PIN chips
designed with long minority carrier lifetime,
and thick intrinsic width. Thus operation as
low as 1 MHz is possible with low distortion.
Additionally, the low diode capacitance
allows useful operation well into the microwave frequency range.
The 1N5767 (5082-3080) is a general purpose low power PIN diode designed for both

switch and attenuator applications.
The 1N5957 is primarily used as an attenuator PIN diode and is particularly suitable
wherever current controlled, wide dynamic
range resistance elements are required. The
1N5957 has also been characterized for the
75Q attenuator, commonly employed in CATV
systems.

MAXIMUM RATINGS

Reverse Voltage
(VR) - Volts
(IR
10 IJA)

100V

Average Power Dissipation: (25 'C)
Free Air (P oJ

400 mW (Derate linearly to 175'C)

=

Operating and Storage Temperature Range

~UNITRODE
12·6

1N5767 (5082-3080) 1N5957
Electrical Specifications (25°C)
Test

Symbol

1N5767
(5082·
3080)

1N5957

Total Capacitance (Max)
Series Resistance

CT
Rs

Series Resistance

Rs

Series Resistance

Rs

Carrier Lifetime (Min)

T

0.4 pF
1000Q(min)
2000Q(typ)
SQ(max)
4Q{typ)
2.5Q(max)
1.5Q(typ)
1.0 ",S

Reverse Current (Max)
Current for Rs = 75Q
(typ)
Return Loss (typ)

IR

10 lAA

175

0.7mA

-

30 dB

0.4 pF
1500Q(min)
3000Q(typ)
SQ(max)
6Q(typ)
3.5Q{max)
2.0Q(typ)
1.5(min)
2{typ)
10 lAA
O.S mA1.2mA
30 dB

-

-40dB

-50dB

-60dB

-65 dB

Second Order Distortion
(typ)
Third Order Distortion (typ)

RESISTANCE
VS FORWARD CURRENT
(TYPICAL)
10K

~

..

IIIIIII

:'

,I

I

j....

I

i

'

, i

~
tl

:!I

50V,1 MHz
10 ,.,A, 100 MHz
20 mA 100 MHz
100 mA 100 MHz

IF = 10 mA
V R = Rating
Rs = 75Q
Diode terminates
75Q line
Bridged tee attenuator
atten. = 10 dB
Pin = 50 dBmV
F, = 10 MHz,
F2 = 13 MHz

FORWARD VOLTAGE
VS FORWARD CURRENT
(TYPICAL)

II

lN5767

,

'I
I I

It.

i

lN5957

LIJ.

kl:

II

11

tii

i !

1

"

~'

,

lN5767

0

~

0.01

0.10

-+-

'I

Z 1.0
w

I

i3
a

a:

1
0,001

'~~7

a:
a:

(3080)

IIIII
111111

~

~

..

,p

'-

10.0

I

100

III

100

I,

----t"

E 1000

!.!!

iii

Conditions

' il:'

l
1.0

10.0

~
a:
o
u.

j
100.0

J

0,10

I

Diode Current (mA.)

1

0.01

1

0.001

o

.2

II

.4

.6

.8

1.0

FORWARD VOLTAGE (VOLTS)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 16106540
TWX (710) _6509 • TELEX 9501064

12-7
PRINTED IN US ...

1N5767 (5082-3080) 1N5957

lI'OTAL CAPACITANCE va
REVERSE VOLTAGE
.8

~

fl

c:

J!!

.7

."

.6

.~

g-

.5

5M~

U

iii

~

.4

10~r-

.3

100 MHz

I

13

1 MHz

I

.2

2

5

10

20

50

100

200

500

1000

V,- Reverse Voltage (V)

PARALLEL RESISTANCE VS REVERSE VOLTAGE. '
100
I£100MHi
r=1'-"
t..,....--- ~JJ~z

2

:

"c:

u

50

1.0GIHZ

I--'"

~

r

'iii

"

II:

]!
~


I'\.

............. .........
o

1.1

G>

'\

1l(5i
a:
w
;:

u
c:

'\ \UM4300C

~UM4300D"

«
0-

/'"

1.2
G>

125

150

175

0 +20 +40 +60 +80 +100 +120
Temperature (OC)

STUD TEMPERATURE (oC)

PULSE THERMAL IMPEDANCE VS PULSE WIDTH

~ 100.

lllllill

~

11111111
11111111

~

I

10.

Part numbers of Unitrode PIN Diodes consist of the
letters UM followed by four digits and one or two letters.
The first two digits indicate the diode series, the next

~

f-

two digits specify the minimum breakdown voltage in

hundreds of voits. The remaining letters denote the
package style. Reverse polarity (anode on stud end) is
available in C or D Styles and denoted by adding second
letterR.

Iliililt' UItI!I

I
~

'"~

ORDERING INSTRUCTIONS

.u:~7~.lllIII

.1

IUM43100 MHz

1

~HZ:

10,0

U

...J

a

1.0

I-

~

U

1

Ii:'

5

10
V, -

20

50

100

200

o
2

1

500

V. -

REVERSE VOLTAGE (V)

5

10

20

50

100

REVERSE VOLTAGE (V)

UM6600 SERIES
ORDERING INSTRUCTIONS

.8

Part numbers of Unitrode PIN diodes consist of the letters
UM followed by four digits and one or two letters. The first
two digits indicate the diode series, the next two digits
specify the minimum breakdown voltage in hundreds of
volts. The remaining letters denote the package style.
Reverse polarity (anode large end cap) is available for
the C style and denoted by adding second letter R.

Ii:'

e

.7

UJ
(J

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«
!::

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«
«
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aI-

,

"\
:Mr l'.
5

.3

U

M~z-.."

10
1100

.2

MHz
1HZ,
2
V, -

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (6171 861-6540
TWX (710) 326-6509 • TELEX 95-1064

12-22

"

'"
5

10

20

50

100

REVERSE VOLTAGE (V)

PRINTED IN USA

UM6000 UM6200 UM6600

POWER RATING -

AXIAL LEADE,D DIODE

UM8OOOIUM8200

UM8800

~

z
o
~

L" 114" (S.3Smm)

~

(~.~~~~I

a::

l = 1/2"
2 (12.7mml

~
x
~

=

l
314H
(1905mm)

I
~c

75

50
TL

100

175

T L' LEAD TEMPERATURE (oCI

LEAD TEMPERATURE (oC)

POWER RATING
0::
W

6

s:~

e~ 5
o.z

we
Cl-

4

0::0.
w_

3

>00

2

~!;t
~oo

6.0W

I""-.
4.0W

I

~

-.............

UM6600 ....... r-.........

I

........

a
-50 -25

II

"-..

-............. ~

10 1
0.<

I

UM6000 and
~M6200 Series

~

a 25 50 75 100 125 150 175
TEMPERATURE (OC) (of one metal pin)

PULSE THERMAL IMPEDANCE VS PULSE WIDTH

~ 100

E

UI
0

50

Z

20
10

0

w

5

::!:

2

~

0.

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0::

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w

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00

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0.

I

as
UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-

~~

.5

:I:

I-

-

.02
.01

~

-~

~UM~O:~ SERIES
·UM6600 SERI

lUlJ]

V
/

liW1IL
10- 5

10- 4
10- 3
10- 2
PULSE WIDTH (SEC)

PRINTED IN USA

12-23

UM6000 UM6200 UM6600
MECHANICAL SPECIFICATIONS

STYLE B

STYLE A

.085
095
12.16)
12.411

~ !I-- i!
I I

008 1.20) MIN.
TO GLASS

1
.070 11.JS)
DIA.
MAX.

L

~

rI.

.975
15.08)
124 .S ) +1.200)
j'N·
MAX.

11

t

975
124.8)
MIN.

l

=~=

c~
1.75)
.0315
.0295

11IA.~78)

BLACK
CATHOOE DOT

STYLE C
CARTRIDGE

.040
11.02)

---,-.070

MAX.

OIA.
MAX .

YELLOW CATHODE BAND

.019·.021
1.482·.530)

STYLE E
RIBBON LEADS
.225
.205

·~6

i1.63)
11.521

-r

L 15.72)

r

---
u
o

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a:

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a:

II:

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en

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a:

,.0 . . . .. .
0.1

lmA

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L......L--LLJ...........1...LJLWUI'--I....J.J..LLIL-..u...L.IJ.UL-L...Ll.WIL.-L.J:Z!_

lIlA

lOi1oA

lOO11A
I'F -

lmA

FO~,A,A'D

lOrnA

l00mA

I

lA
l0011A

CURRENT

lOUA

o

I
0.2

0.4

0.6

0.8

1.0

1.2

V F - FORWARD VOLTAGE (V)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 91>-1064

12~26

PRINTED IN USA.

UM7000 UM7100 UM7200
TYPICAL Rp CHARACTERISTIC

TYPICAL

UM 7000 SERIES
1M

UM 7000 SERIES

,----y------y-------,

§

3

rL:
!!::.

UJ

U

~ lOOK I - - - - - f - f - - - + - - - - \

~
v;

UJ

0.5 GHz
_-::::F--1.0 GHz



:J

'"
'iii

£

";;;

.LJ.M93.01

100

....

EE ::$~

10

~

~

11>

0

"Cio

u..

/

10

.1
.01

.1

10

.5

100

Diode Current (rnA)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL (617) 861·6540
TWX (710) 326-6S09 • TELEX 95-1064

.6

.7

.8

.9 1.0 1.1

Forward Voltage (Volts)

12-31

PAINTED IN USA

UM9301
TEST CIRCUIT FOR DISTORTION
MEASUREMENTS

NORMALIZED RS VS TEMPERATURE
1.3

,/

1.2
CD

0

/

"
Ui
I;(\

C

"
0

~

:;

~

CD

..

70

"

80

~
0

"Ci
0

a;

CD
CD

"el"l.
".\'0'1.

.s.
0

'"

third order
distortion

60

u:

0

~

second order
distortion

50

"0'..

.1

=

Input Power
+60 dBmV
Input Frequencies
10 MHz
...l..l..Ll..LL & 13 MHz

90

ilJilLWillillill

100

o

.01

=

2 4 6 8 10 12 14 16 18 20

024681012141618202224

Attenuation (dB)

Attenuation (dB)

MECHANICAL SPECIFICATIONS

t

.975"
24.8mm
MIN.

l

250"
.975"
635mmr24.8mm
MAX.
MIN.

-;~~~~~~111rl~,

190"
2.29mm

~I

LCATHODE

-l

\~

.029"DIA . . 74mm

~ .027"

.68mm

I

BAND

MAX.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

PRINTED IN USA

12·32

PIN DIODE

UM9401 SERIES
UM9402 SERIES
UM9415 SERIES

COMMERCIAL TWO-WAY RADIO
ANTENNA SWITCH DIODES
Features
• Specified low distortion
• Unitrode ruggedness and reliability
• Low bias current requirements
• Priced for high quantity applications
Description:
Unitrode offers a series of PIN diodes specifically designed and characterized for solid
state antenna switches in commercial twoway radios. Antenna switches using the
UM9401 and UM9415 series PIN diodes provide high isolation, low loss and low distortion characteristics formerly possible only
with electromechanical relay type switches.
The UM9401 and UM9402 diodes can
handle above 100W of transmitter power,

while the UM9415 will handle over 1000W.
The extensive characterization of these PIN
diodes in antenna switch applications has
resulted in guaranteed low distortion specifications under transmit and receive
conditions. These diodes also feature low
forward bias resistance and high zero bias
impedance which are required for low loss,
high isolation and wide bandwidth antenna
switch performance.

MAXIMUM RATINGS

Reverse Voltage
(VR) - Volts
(lR = 10 j./A)
Average Power Dissipation (PA)
Leads - Y2 in. Overall to 25°C
Heat Sink
25°C (Package Flange) Temperature
Free Air

UM9401

UM9402

UM9415

50V

50V

50V

5.5W

-

10W

-

10W

1.5W

-

2.5W

Operating and Storage Temperature Range

~UNITRODE
12-33

III

UM9401 UM9402 UM9415
Electrical Specifications !

UM9415

VR = SOV

,

/

100

Z

:--l

I--.

r--

!!

VR '" OV

l000MHz

"
0

I'-. .... UMVR941'" SOV
UM940119402
~R"'OV

a:

FREQUENCY

1

UM~1J ~~OV
lOMHz

l00MHz

lGHz
FREQUENCY

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-&509 • TELEX 95-1064

PRINTED IN

12·34

us ...

UM9401 UM9402 UM9415

POWER RATING
UM940119402

POWER RATING
UM9415
14 r---~--~---'--~----'---~--'

~
z
o

~

121---+---+---4-~4---~~~--~

oa:ill'0~-":""'++

~

61---+---~~od-"~""'---+---+---1

X

~

6

I

0..0
~

41==~......F>-..i~~~~'

2 1---+---~---+---4----~~~--~
25

50

75

100

125

150

25

175

TL - Lead Temperature (OC)

50

75

100

125

150

175

T L - HEAT SINK TEMPERATURE (oc)

MAXIMUM TRANSMITTER POWER
UM9401/UM9402

UM9415

i

-'000

j

~

·E
In

c::
j!:

II!

E
:l
E

---

=",L = v."
-- -~ z. = 5012,0
£ I I

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100

l

Z.

i--

-1

T

, .., SiJij

"'-1

If _

-::. ~"'-1 ......

.........

IF = 200mA
::::::::: -:....
I

~

Q)

"

.~

II ~ "- "" 1,\
..!.:~
~
"'-1

......... 'f..,~

.......

50"'-1

~

i'.

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E

:l

:2:

I

10 0

II!

'\

:2:

'\

I

'(

10

100

125

150

25

50

= 50 mA

,IF
'\

........

~

"- '\"
IF

75

100

125

20mA

= 10mA
150

TL - Lead Temperature (OC)

TL - Lead Temperature (OC)

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

......

IF

10

75

--

c::

·x

50

IF - 100 mA

100

In

.~

25

= 50, L = Y2" (12.7 mm),

0 = 00

1:::::,

PRINTED IN USA

12-35

UM9401 UM9402 UM9415
Maximum Transmitter Power
The maximum CW transmitter power,
PT(max), a PIN diode antenna switch can handle depends on the diode resistance, Rs,
power dissipation, Po, antenna SWR, 0, and
nominal impedance, Zoo The expression
relating these parameters is as follows:

(0;0 1 )

PT(max) -_ Po x Zo
Ro

2

[Watts]

Characteristic curves are shown in the
data section which give both the maximum
and typical diode resistance, Rs as a
function of forward current. The maximum
power dissipation rating of the PIN diode
depends both on the length of the diode
leads and the temperature of the contacts to
which the leads are connected. A graph
defining the maximum power dissipation at
various combinations of overall lead length
(L) and lead temperature (T J is given in the
data section., From these curves and the
above equation, the power handling
capability of the PIN diode may be computed
for a specific application.
Curves are also presented which show the
maximum transmitter power that an antenna
DC SUPPLY

switch using UM9401s and UM9415s can
safely handle for various forward currents
and lead temperatures. These curves are
based on a typical qesign condition of a V2
in. total overall lead length, 50Q line
impedance and a totally mismatched
antenna (0
(0). For the case of a perfectly
matched antenna, the maximum transmitter
power can be increased by a factor of 4.

=

Design Information
A circuit configuration for a two-way radio
antenna switch using PIN diodes consists of
a diode placed in series with the transmitter
and a shunt diode placed a' quarter wavelength from the antenna in the direction of
the receiver as shown. For low frequency
operation, the quarter wave line may be
simulated by lumped elements. Typical performance of antenna switches using PIN
diodes forward biased at 100 mA is less than
0.2 dB insertion loss and 30 dB isolation
during transmit; at zero bias the receive
insertion loss is less than 0.3 dB. This performance is achievable across a ± 20% bandwidth at center frequencies ranging from 10
to 500 MHz.

ANTENNA

RFC

DCB

DCB

02

TRANSMITTER

RECEIVER

o
L

C

= Z o/2do
= 1/2"foZo

RECEIVER

o
UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL, (617) 861-6540
TWX (710) 326-6509 • TELEX 9S-1064

PRINTED IN U S It.

12-36

UM9401 UM9402 UM9415

UM9401

UM9402

.020 (.51)
Min .

a
'L II II J
ELLOW

.029 (.74)

,.,nm

~

--.£ .090 (2.29) Dia. max

---.r '''D''.~
(1.40)

LDia.

CM

.975
(24.8)
Min.

.055
(1.40)
Dia .
max.

CATHODE BAND

Dia.
max

9D

.250 Max.
(6.35)

-1l

.975
(24.8)
Min.

.142
.130
(3.61)
(3.30)

.012 (.30)
.010 (.25)

UM9415

YELLOW CATHODE BAND

1.30 Dia. max

~(3.30)

Dia.

.97b
Min.
(24.8)

.300
Max.
(7.62)

Dimensions: inches (millimeters)

12·37

.975
Min.
(24.8)

-J

PIN RADIATION DETECTORS
Features
• High Photocurrent Sensitivity
• High Reliability Construction
• Fast Rise Time
• Wide Dynamic Range
,. Hardness to Neutron Bombardment
• Low Operating Voltage
Description
Silicon PIN devices are effective detectors
of nuclear and· electromagnetic radiation.
This includes gamma radiation, electrons,
and X-rays. The detecfbrs can be used
across the temperature range of - 55°C to
+ 175 °C instead of being restricted to use at
low temperatures.
The absorbed radiation produces electronhole pairs in the space charge region. These
charges are swept out by the applied field
and result in a current flow proportional to
the rate of absorbed radiation.
The Unitrode UM9441 series utilizes high
resistivity material and is designed to have a
uniform area mesa structure to define the
active volume. The current sensitivity of

UM9441

these devices is proportional only to the
I-region volume and is independent of temperature so long as applied voltage exceeds
the saturation voltage. This structure also
minimizes the effects of permanent damage
caused by neutrons and other high energy
radiation. Experiments on devices of the
UM9441 design show no degradation in
gamma sensitivity resulting from a total
dose of 1014 neutrons/cm 2 of 1 MeV
equivalent.
Package
The UM9441 is an axially leaded device
constructed by metallurgically bonding the
PIN chip in between two molybdenum refractory pins that are typically 0.125 inches in
diameter and 0.050 inches long. Hyper-pure
glass is then fused over this bond to form a
voidless seal. Leads are then brazed to ends
of molybdenum pins. This results in a highreliability package using materials so well
thermally matched that the UM9441 can
withstand temperature shock or cycling from
-196°C to + 300°C.

ABSOLUTE MAXIMUM RATINGS
Reverse Voltage ....... 100V
Photocurrent .......... 1A
Storage Temperature ... - 55°C to + 200°C
Operating Temperature. - 55°C to + 175 °C

MECHANICAL SPECIFICATIONS
UM9441
'\ YELLOW CATHODE BAND
\

029 (074\ DIA

~i"~' ..
I

. . . - 200DIA MAX

.

,---1 ( 508\

!~--hI
I

It

I-

I

~---~~~ ---+~;~+----~~~ ----1
(2481

(3811

12481

~UNITRDDE

Dimensions In inches (millimeters)

12-38

UM9441
Electrical Specifications ~:: J';;~k100pF)

ill!

1200
1800

Dissipation Factor:

.' ·11

1000

-55°C to +125°C

o ±30 PPM/oC

m

681
821

....

t

102
122

•

152

~

182
222

~.

2700

272

3300

332

3900

392

4700

472

5800

562

"""

Capacitance Tolerance:

6800

F (±1 %), G (±2%), J (±5%),
K (±10%), M (±20%)

8200

822

.01 mF

103

Guidelines for Automatic
Insertion:

682

How To Order
STYLE

CG

PACKAGE

A 170 x 075
B 170 x 100
C 200 x 100
D 260 x 100
E 300 x 110
F 400 x 150
'G 300)( 150

EIA
CAPACI·
TANCE
CODE

TOLERANCE

VOLTAGE

TEMPERATURE
CHARAC,
TERISTIC

Capacitance

F
G

±1%
±2%
±5%
± 10%
M ±20%
Z + 80%. -20%
V GMV

C

25V
D 50V
E 100V

N

Value

'"

pF

J
K

F

NPO

X X7R

Z Z5U

200V

"Consult factory for values and voltages

UNITROOE CORPORATION. 5 FORBES ROAO
LEXINGTON. MA 02173. TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

14-12

PRINTED IN U.S A

X7R (BX) Characteristics

PACKAGE
Body

length(max,)
£iqdy

0.8.

I-~~~h-l

-==II
llead

I

(max.)

bo\1Y
die.

Capacitance
pF

!eng1h

1.0 ins.

~.4mm

1"

C

1)

.260 Ins.

4.32 (mm)

.200 ms.
5.08 (mm)

.100 ins

.100 ins.

2.54 (mm)

2.54 (mm)

Voltage
2550100

Voltage

A
.170 ins.

.170 ins

432 (mrn)
.075 ins.
1.91 (mm)
Voltage
2550100

2550100

660 (mm)

.300 ins.
762 (mm)

.400 ins.
10.16 (mm)

100 ins .
2.54 (mm)

.110 ins.

2.79 (mm)

.150 ins .
3.Bl(mm)

Voltage
2550100

Voltage
2550100

Voltage
2550100

EIA
Capacitance
Code

100

101

120

121

150

151

180

181

220

221

270

271

Performance Specifications

330

331

390

391

MIL Specifications:

470

471

560

581

Meets or exceeds applicable portions of
MIL-C-11015 and MIL-C-39014.

:

680

681

820

821

Insulation Resistance:

1000

102

Minimum 100,000 megohms or 1,000
megohm microfarads, whichever is less,
with rated voltage applied, @ 25°C (see
curve for other temperatures).

1200

122

1500

152

1800

182

2200

222

2700

272

3300

332

2.5 x WVDC

3900

392

Life Test:
2 x WVDC @ 125°C, 1000 hours.
Lead Material:

4700

472

5800

562

Dielectric Strength:

Tinned Copper Clad Steel

Temperature Range:
-55°C to +125°C

Temperature Coefficient:

!.Ii

6800

682

8200

822

.01 mF

103

.012

123

.015

153

,018

183

II!

.022

223

±15%

.027

273

Dissipation Factor:

.033

333

2.5% @ 1 KHz @ 1 VRMS

.039

393

.047

473

Capacitance Tolerance:

.058

583

K (±10%), M (±20%) Consult Factory for
J (±5%) Tolerance

.068

683

ill
Iii

.082
.10

Guidelines for Automatic
Insertion:

104

.12

124

.15

154

.18

184

.22

224

.27

274

How To Order
STYLE

CG

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

823

PACKAGE

170 x 075
170 x 100
200 x 100
260 x 100
E 300 x 110
F 400 x 150
'G 300 x 150
A
B
C
D

14-13

EIA
CAPACI·
TANCE
CODE

TOLERANCE

C 25V
D SOV
E 100V
F 200V

±1%
±2%
±5%

Capacitance
Value

'"
pF
M

Z
V

±10%
±20%
+80%,

VOLTAGE

TEMPERATURE
CHARAC·
TERISTIC

N NPO

X XlR
Z

Z5U

~20%

GMV

PRINTED IN USA

Z5U Characteristics
(General Purpose)
Body
Length
(max.)

Body
Dia.

Insulation Resistance:
Minimum 100,000 megohms or 1,000
megohm microfarads, whichever is less,
with rated voltage applied, @ 25°C (see
curve for other temperatures).

.300 ins .

.400 ins.

7.62 (mm)

10.16 (mm)

•075 Ins.

•100 Ins•
2.54 (mm)

.lOOin8.
2.54 (mm)

.110 ins.
2.79(mm)

3.81 (mm)

Voltage
2550100

Voltage
2550100

Voltage
2550100

Voltage

Voltage

pF

2550100

2550100

.150ln8.

EIA
Capacitance
Code

1000

102

1200

122

1500

152

1800

182

2200

222

2700

272

3300

332
392

3900

'.lfi:·

4700
5600

6800
8200

.012

2.5 x WVDC below .5 mfd; 2.0 x WVDC
.5 mfd and above

.015

Life Test:

.022

2 x WVDC @ 85°C, 1000 hours.

.027

l'.

472

582

682
822

103
123

153
~. ;

'fill
III

.018

.033

Lead Material:

.200 ins.
5.08 (mm)

CapaCitance

.01 mF

Dielectric Strength:

.170 ins.
4.32 (mm)

1.91 (mm)

(max.)

Performance Specifications

.170 ins.
4.32 (mm)

.

183
223
273

333

,.
"

.039

393

Tinned Copper Clad Steel

.047

473

Temperature Range:

.056

563

+lO°C to +85°C

.088

683

.082

823

Temperature Coefficient:

.12

Dissipation Factor:

.15

3.0% max. at 1 KHz., 25°C, @ .3 VRMS

.18

Capacitance Tolerance:

"r':

:(,;

~·:.r>f·

;;",.;:

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

124
154
184
224

.27

27•

~

.33

334

.39

394

.47

47'

.56

564

.68

684

.82

824

1.0

105

How To Order
STYLE

;\~1~~::;,.·.··.·~~;

104

''..Jl

.22

M (±20%), Z (+80%, -20%),
GMV (+100%, -0%).

Guidelines for Automatic
Insertion:

".
III

.10

+22, -56%

CG

PACKAGE

x 075

A

170

B

170 x 100

C 200 x 100
D 260 x 100
E

F

-G

EIA
CAPACITANCE
CODE

TOLERANCE

VOLTAGE

Capacitance

F

Value
m

C 25V
D 50V

J

pF

300xl1Q
400 x 150
300 x 150

±1%

G ±2%
K
M

±5%
±10%
±20%

Z
V

GMV

E
F

10DV
2DOV

TEMPERATURE
CHARAC·
TERISTIC

N

NPO

X X7R
Z Z5U

+ 80%, -20%

·Consull factory for values and voltages

14-14

PRINTED IN U.S.A

APPLICATION & DESIGN DATA

15-1

III

15-2

APPLICATION AND DESIGN DATA
SUBJECT

PAGE

SUBJECT

PAGE

LINEAR INTEGRATED CIRCUITS

POWER HYBRIDS & MODULES

A Second Generation - IC Switch Mode
Controller Optimized for High Frequency Power
Mosfet Drive (U·89) ................................ 15·137

Switching Regulator Design Guide (U·68A) ............. 15·13
Flyback and Boost Switching Power Supplies (U·76) .... 15·46
Detecting Impending Core Saturation in
switched·Mode Power Converters (U·81) ............. 15·68

The UC1524A Integrated PWM Control Circuit
Provides New Performance Levels
for an Old Standard (U·90) ......................... 15·148

Hybrid Circuits for Low Voltage
Switched· Mode Converters (U·82) .................... 15·76

Applying the UCI840 to Provide Total Control
for Low·Cost, Primary·Referenced
Switching Power Systems (U·91) .................... 15·160

Hybrid Circuits for Off·Line
Switching Power Supplies (U·84) ..................... 15·89

A New Integrated Circuit for Current·Mode
Control (U·93) ..................................... 15·170

Minimizing Storage Time When Using Unitrode
Switching Regulator Power Output Circuits (ON·3) ... 15·215

The UC1901 Simplifies the Problem of Isolated Feedback
in Switching Regulators (U.94) ...................... 15·179

Avoiding Spurious Oscillation When Using Unitrode
Switching Regulator Power Output Circuits (ON-4) ... 15·216

A Simple Isolation Amplifier
Using the UC1901 (DN·19) ......................... 15·240

Operating the Switching Regulator Output Circuit
at Low Frequencies (DN·6) ......................... 15·220

PIN DIODES
Pin Diode Designers' Handbook & Catalog (PD500B) . . . . . . .. •

A 350 Watt Switching Regulated Output Power Supply
for Multiple Outputs Utilizing
Unitrode Semiconductor Components (ON·8) ........ 15·224

POWER TRANSISTORS & DARLINGTONS

THYRISTORS (SCRs & PUTs)

Power Darlingtons as Switching Devices (U·70B) ............ •
The Unitrode monolithic power Darlington is characterized
and compared with other switching methods. Unique ad·
vantages are discussed and basic circuits for many
modern applications are shown.

Incorporate Active Inrush Current Limiting
to Improve Reliability and Efficiency of
Power Supplies (U·83) .............................. 15·85

Programmable Unijunction Transistors (U·66) ........... 15·5

Squib· Firing Circuit Provides for Reliable Firing,
from Low Level Inputs (ON·10) ..................... 15·230

Thermal Design Considerations for Operating
Unitrode's TO·92 Transistors and Darlingtons
in Pulsed·Power Applications (U·77) ................. 15·55

Combined AC·DC Load Control Simplifies
sCR Reset (ON·11) ................................. 15·232

500W, 200kHz Off·Line Power Supply Using
Power MOsFETs (U·87) ............................ 15·115

Turn·off Method for SCRs Minimizes Effect of
OV/DT (ON.13) .................................... 15·234

Design Considerations for Power MOsFET
Gate Drive Circuitry (U·88) ......................... 15·121

Nanosecond sCR Switch for Reliable High Current
Pulse Generators and Modulators (DN·14) ........... 15·236

Proportional Base Drive of Bipolar Power Transistors
in Switching Power Supplies (D1) ................... 15·191

Nanosecond SCR Switch for Laser Oiode
Pulse Driver (ON·15) ............................... 15·238

How to Safely Check Sustaining Voltage on
Power Transistors (DN·5) ........................... 15·217

TRANSIENT VOLTAGE SUPPRESSORS/ZENERS
Guidelines for Using Transient Voltage
Suppressors (U·79) ................................. 15·59

RECTIFIERS
The Importance of Rectifier Characteristics in
Switching Power Supply Design (U·73A) .............. 15·35

Determining the Change in Zener Voltage when the
Current is Changed (ON·1A) ........................ 15·214

Design Guide· Power Schottky Rectifiers in a
Switching Regulator (U·85) .......................... 15·99

DESIGN REVIEW
250 Watt Off·Line Forward Converter
Design Review (Tl) ................................ 15·198

RECTIFIER ASSEMBLIES, HIGH VOLTAGE RECTIFIERS
Doorbell 8 High Voltage Stacking (N·136B) .................. •
Self'stacking rectifier modules are described and shown in
numerous applications. Examplesofcircuitsand mounting
configurations are given.
Ooorbell 8 Tube Replacement (N·130B) ..................... *
The advantages of using rectifier modules to replace tubes
are discussed. Case histories are noted and advice is given
relating to module selection and installation. Pertinent
ratings and other information is presented in tabular form,
and outlines are shown for standard caps and bases.

*Does not appear in

Databook.

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

15·3

PRINTED IN U.S A

III

Unitrode Corporation makes no representation that
the use or interconnection of the circuits described
herein will not infringe on existing or future patent
rights, nor do the descriptions contained herein imply
the granting of licenses to make, use or sell equipment constructed in accordance therewith.
© 1984, by Unitrode Corporation. All rights reserved.
This section, or any part or parts thereof, must not be
reproduced in any form without permission of the
copyright owner.

NOTE: The information presented in this section is
believed to be accurate and reliable. However, no
responsibility is assumed by Unitrode Corporation for
its use.

Doorbell". Chipstrate", and Magnum" are
registered trademarks of Unitrode Corporation.

UNITRODE CORPORATION· 5 FORBES ROAD
LEX I NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

15-4

PRINTED IN U.S.A.

APPLICATION NOTE

U-66

PROGRAMMABLE UNIJUNCTION TRANSISTORS
INTRODUCTION
The Programmable Unijunction Transistor is today's preferred device for low cost timing circuits,
oscillators, sensing circuits, and a wide range of other applications where a variable voltage level
threshold is desired. This note describes the principle of operation of the PUT, its electrical characteristics, and its various applications.
PRINCIPLE OF OPERATION
The PUT is a three-terminal device as shown in the schematic representation, Fig. la. The anode
voltage VA and the gate voltage VG are measured with respect to the cathode (k). The corresponding anode, gate and cathode currents are given respectively by lA, IG, and IK' The most
general usage of a PUT involves an external gate resistor RG as shown in Fig. 1a. Hence, the voltage generally referred to in characterizing PUT's is the applied voltage Vs rather than the gate
voltage VG which is less than Vs by the voltage drop across RG.
The theory of operation of the PUT can perhaps be best understood by considering that it is a
four-layer (PNPN) device, as is a silicon-controlled rectifier (SCR). The basic PUT structure is
shown in Fig. lb, in which it is noted that the gate is adjacent the anode, in contrast to an SCR in
which the gate lead is adjacent the cathode. As shown in Fig. lc, the PUT, has a two-transistor
analogy, which is similar to that used to explain the operation of an SCR, except that the gate
connection is common to the PNP base and the NPN collector. Regenerative switching occurs
when the sum of the alpha's dynamically approach unity. The net result is that when the anode
voltage exceeds the gate voltage by an amount equal to the emitter to base drop of the PNP transistor, the positive feedback drops the anode-cathode voltage and presents a negative resistance.

Figure la. PUT Parameters

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Figure 1b. PUT Structure

15-5

PRINTED IN U.S.A.

APPLICATION NOTE

U-66

K (Cathode)
Figure 1c. Two Transistor Analogy

ANODE CHARACTERISTIC
The PUT, together with RG as shown in Fig. 1a, exhibits a negative resistance characteristic illustrated in Fig. 2 for a fixed value of Vs and RG. For anode voltages less than the peak voltage Vp
at which a current IGA flows. (Region I), a,positive incremen~al resistance results. For anode
currents above the valley current lV, which occurs at the valley voltage Vv (Region III) a positive
incremental resistance also occurs. However, for anode currents between the peak point current
Ip and the valley current IV (Region II) the incremental resistance is negative. This region is un·
stable and forms the basis for use in oscillator circuits. With VA less than Vs forward anode cur·
rent flows. At the peak current point, Ip where VA exceeds Vp the PUT will regeneratively
switch to its low impedance state: anode current increases rapidly to a level limited by external
load resistance. The PUT will remain on this "ON STATE" until the anode current is reduced to
a level below the valley current, IV' At this point the PUT returns to its blocking or "OFF
STATE", because operation in the negative region is unstable. Operation in the region between
'D and IV will be covered in detail.

FIII

IV

~
I'"
I

I

Ip

V T = Vp - Vs

- - VALLEY
.....

...r~

II

"

..... ~
__ II_ _ _ _ _ _ _" _ _

PEAK

Figure 2. PUT Characteristics
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

15-6

PRINTED IN U.S.A.

U-66

APPLICATION NOTE
ADVANTAGES
The primary advantage of the PUT over the UJT is the programmability of operating parameters
such as peak point current lip), valley current (IV)' and offset voltage (V T ), which is defined as
(1)

These are easily programmed over a range by the choice of circuit components. Shown in Fig. 3
are the relationships between Ip and IV vs stand off voltage (VS) and gate source impedance
(R g). As observed from Fig. 3, operation at higher voltages allow a greater spread between Ip and
IV' The significance of this becomes apparent in applications where the negative resistance
(Region II, Fig. 2) must be large and must remain relatively broad over a temperature range.
Other advantages of the PUT over the UJT are:
1.
Lower current drain through R, and R2 ; the UJT required several milliamperes of
current, The PUT micro amperes of current.
2.
Lower peak point current of the PUT allows use of larger Rt (timing resistor) therefore, the Ct may be smaller for the same time delay hence, lower in cost. Lower capacitance values also result in lower leakage current and lower temperature coefficient.
3. Higher efficiency is available due to greater energy transfer from the capacitor to the
load. The on state voltage (VF) is considerably lower for a PUT than for a UJT.
4.
High or low operating voltages may be used; Vs as low as 2V or greater than 40V will
operate the PUT.
5. The PUT has an overall extended operating range due to programmability of Ip and IV'
6. Greater uniformity of triggering point. Stand off ratio J] is not determined by manufacturing tolerance.

10,000

Iv

~ ~2200
~

1,000

-.:;

1KO


0:: u

100

100Kil

:::»

u w
"
I

I

(j~MO
10

_0..,2-

Ip
1KO

2200

r.~

'J

10KO

0.1
100KO

1MO

0.01
.001

.01

0.1

1.0

10

100

1000

Vs
IG ::::: RG Gate Source Current (mA)
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Figure 3.
15-7

PRINTED IN U,S.A.

U-66

APPLICATION NOTE

BASIC PUT OSCILLATOR
An analysis of the basic PUT oscillator demonstrates.the inter-relationship of parameters. From
Fig.4b, the voltage Va changes at a rate determined by the RtC t charging path. When the PUT is
operating in Region I, the anode voltage is given by
Va

=

VBB (1-e- t / Rt Ct)

(2)

The standoff voltage is related to the supply voltage VBB
(3)

where

R,
(4)

71 = - - R, + R2

Triggering is accomplished when the voltage on the capacitor reaches the standoff voltage Vs;
plus the offset vo.ltage VT , i.e.
V BB (1-e-t/RtCt)-VT = 1/ V BB

(5)

The switching time occurs at
t = RtCt

in (

-V~)

(6)
'-1/--VBB
VT varies only slightly with temperature having a temperature coefficient of about 2.5 mv/oC.
Advantages of the PUT over the UJT are readily observed by comparing their operation in a simple relaxation oscillator circuit. Figure 4a shows a typical UJT oscillator with the simplified UJT
model. In the off state the resistance ratio at the intersection of r, and r2 is a fixed value represented by 71 (intrinsic stand off ratio). This ratio which determines the device triggering voltage
is established in the manufacturing process by the resistance of the silicon material and the diode
contact. Manufacturing tolerance result in values of 71 which typically range in value from about
0.4 to 0.9. Replacing the UJT with a PUT results in stable operation in any given circuit (Fig.
4b). The parameter stand-off ratio 1/ is now established exclusively by setting the value of R2
and R, and remains relatively temperature stable. Ip and IV are controlled by gate source resist~nce Rg and stand off voltage Vs (Fig. 3). A detailed discussion of the PUT oscillator will be
given.

81

Typical UJT Oscillator

UJT Model
Figure 4a.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

15-8

PRINTED IN U.S.A.

APPLICATION NOTE

U-66

R1
TJ

R1 + R2

R2

RT

Vs

r
Va

Standoff Ratio

r

A

R1

CT

TJ V BB

VT

Vp -

RG

R1 + R2

Vs

Standoff Voltage

Offset Voltage

Vs
R1R2

Gate Source
Resistance

(7)

Fig.4b
CONDITIONS FOR OSCILLATION
Switching on takes place at the peak point (Ip) switching off requires that current through the
PUT be less than the valley current (I V). Therefore, the load line must intersect the characteristic curve in the negative resistance region Fig. 5 and must be above the Ip point.
CONDITION FOR SUSTAINED OSCILLATION
VSS - Vp
RT
(max) > Ip (max)

VT

This condition insures current
levels greater than the Ip

(8)

This condition insures current
levels lower than the I V

(9)

This condition insures more
stable operation.

1 - TJ »-g-

SB

(10)

III
IV
Negative Resistance

Load Line
Ip

Vv "" 0.6v
UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Vs

Vp

Figure 5. Offset Voltage

15-9

PRINTED IN U.S.A.

U-66

APPLICATION NOTE

CONDITIONS FOR ONE SHOT OPERATION
V BB - Vp
RT

> Ip (max)

>IV

must be satisfied. Since the load current is in the positive resistance region, the PUT will LATCH
on and remain on.
PUT OFFSET COMPENSATION
In order to compensate for offset voltage (VT) temperature shift, a diode 01 forward biased
through RO may be used Fig. 6. The value of RO is selected by:
V BB
RO = - - Ip (max)

A diode having a forward voltage temperature characteristic similar to the offset voltage temperature coefficient (TC) would provide optimum compensation.

Figure 6. Offset Compensation Methods

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APPLICATION NOTE

U-66

TUNABLE FREQUENCY OSCILLATORS
Variable oscillator circuits which include active elements for discharging the timing capacitor CT
are shown in Fig. 7. A second method is given as in Fig. 8.

Rn
1Kn
R2
5.6KO

FREQUENCY RANGE
40 Hz to 65 kHz
RT2
3Mn
OUTPUT PULSE
Rise time-200 nsec.
Pulse width -10fLseC.
Recovery time < 200 nsec.

PUT
CT
.005iJ.F

Vo
R1
15Kn

Fig. 7

FREQUENCY RANGE

40 Hz to 40 kHz
OUTPUT PULSE

SCR

Width - 5 IJ.sec.

Fig. 8

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U-66.

APPLICATION NOTE
DESIGN EXAMPLE
A relaxation oscillator. A trigger generator is needed to provide a pulse of energy.
The required repetition rate is 1000 pulses per second. A power source of 20 Vdc is available.
Step 1
Step 2

Select the value of Rl and R2 based on Ip, IV requirements. For RG = 10Kn,
(Fig.3) Rl ~ 27Kn, R2 ~ 16Kn this will give an T} of ~ 0.63. (Equations 7 and 4).
From Fig. 9 with T given as 0.001 sec and
= 0.63.

T}

of 0.63. RtCt = 0.001, T/RTCT = 1

@T}

Step 3

The condition for sustained oscillation must be satisfied (equations 8 and 9)
hence, 275K < Rt < 1.4 meg (using spec values for a 2N6027).

Step 4

The value of capacitance is chosen by considering the rise time and energy
required. Since RTCT = 0.001 the CT range is 0.0007 < CT < 0.0036J.lfd.
Choose a standard value of capacitance and resistance. For example, CT = 0.002J.lfd
and RT = 470Kn (Standard Value).

For this example Rt = 470Kn, Ct = 0.002J.lfd. A cathode resistance of 20n will provide a
pulse of current of 130 ma with a pulse width of 300 nsec.
1.1

I

1.0

Vi

.9
.8

/

.7

~
to)
~

-

)

.6
.5
.4

/

.3

.2
.1

/'
o
o

V

.1

V

/

I
I

I
I
•
I

/

ex:
~

~

/

I

I
r

I

I
I

V

I
I

I

I
I

I
.2

.3

.4

.5

.6 .63

.7

.8

Stand Off Ratio 17

Fig. 9
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APPLICATION NOTE

U-68A

SWITCHING REGULATOR DESIGN GUIDE

I. The Advantages of the Switching Regulator
Unlike conventional "dissipative" series or shunt
regulators, in which the power-regulating transistor
operates in a continuous-conduction mode, dissipating large amounts of power at high load currents especially when the input-output voltage difference is
large- the switching regulator has high efficiency
under all input and output conditions. Furthermore,
since the power-transistor "switch" is always either
cut off or saturated (except for a very brief transition
between those two states), the switching regulator
can achieve good regulation despite large changes in
input voltage, and maintains high efficiency over wide
ranges in load current.

industrial process control systems, instrumentation,
and communication,
Compared to the dissipative regulator, the switching
regulator does have some disadvantages which preclude its use in some applications. The primary power
source delivers current to the switching regulator in
pulses which, for efficiency reasons, have short rise
and fall times. In those applications where a significant series impedance appears between the supply
and the regulator, the rapid changes in current can
generate considerable noise. This problem can be
reduced by reducing the series impedance, increasing the switching time, or by filtering the input to the
regulator,

Because the switching regulator regulates by varying
the ON-OFF duty cycle of the power-transistor switch,
and the switching frequency can be made very much
higher than the line frequency, the filtering elements
used in the power supply can be made small, lightweight, low in cost, and very efficient- i.e., with almost
negligible power losses. It is possible to drive the
switching regulator with very poorly filtered DC (in
fact, in high-power applications, three-phase rectification without filtering of any kind is often used to
develop the input DC from the power line), thereby
eliminating large and expensive line-frequency filtering elements.

A second problem of the switching regulator, compared to the dissipative regulator, is its response time
to rapid changes in load current. The switching regulator will reach a new equilibrium only when the
average inductor current reaches its new steady-state
value. In order to make this time short, it is advantageous to use low inductor values, or else to use a
large difference between the input and output voltage.
Improved circuits for controlling switching regulators
have been developed at Unitrode, thereby eliminating
some earlier design constraints and optimizing the
performance attainable with available hardware.
These new circuits permit taking full advantage of the
economy and efficiency of the Unitrode PIC600
Series Hybrid Power Switch.

Finally, it is possible to design switching regulators
with excellent load-transient properties, so that step
increases of load current cause relatively small instantaneous changes in output voltage, recovery from
which is essentially completed in a few hundred
microseconds.

The design approach used herein is believed to be
original, and to be clearly superior to earlier methods
of calculating the key parameters and designing the
power inductor ... yielding explicit, accurate results
in significantly less time than the approximate equations in common use.

The switching regulator has become increasingly
popular in new-equipment designs, not only in aerospace and defense applications, but in computers,

15-13

U-68A

APPLICATION NOTE

II. The Switching Regulator Described
and Characterized
The basic configuration of a switching regulator is
shown in Figure 1. It accepts a DC voltage input, Ein,
and regulates a DC ouput voltage, Eo, despite variations in Ein and load current. Although the static regulation, dynamic regulation, and ripple rejection of this
type of regulator cannot be as easily optimized as they
can in a continuous (so-called "dissipative") series
regulator, its efficiency, power density (Watts output
per cubic inch) and economy are all markedly superior
to the series regulator ... particularly for low-voltage,
high-current supplies. Unlike a series regulator, it
maintains high efficiency with high input voltages.
Switching regulators can thus be employed with high
efficiency to derive low voltage outputs from a high
voltage unregulated supply.

load, circulating through "catch" diode 01. The input
of the LC filter is now at zero Volts, il decreases to
its original value and the cycle repeats.
The output voltage, Eo, will equal the time average of
the voltage at the input of the LC filter:

where:

T

=

1/f

The control circuit senses and regulates Eo by controlling the duty cycle, a = ton/T. If Ein increases,
the control circuit will cause a corresponding reduction in the duty cycle, a, so as to maintain a constant
Eo.

All of these advantages derive from the method of
regulating the output voltage: by varying the duty
cycle ot a power-transistor switch, rather than varying
the voltage drop across a power transistor operating
in the linear mode. Because the switch (01 in Figure
1) is always in the saturated state when it is conducting, and is otherwise completely non-conducting (except for a brief commutation time between the ON and
OFF states), the power dissipated in the regulator is
much lower than it would be in a series regulator for
the same input and output conditions.

Eo = a Ein

Rs

-!.!.-

L
I,

c
E In

FROMAS~DNS\NG

01

CONTROL CIRCUITS

The basic switching regulator circuit functions
as follows:
The control circuit causes transistor switch, 01, to
switch on and off at a predetermined frequency, f.
During the time that 01 is on, to", the input voltage,
Ein, is applied to the input of the LC filter, causing
current il to increase. When 01 is off, the energy
stored in the inductor, L, maintains current flow to the

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ESR

Figure 1. Switching Regulator Basic Configuration

15·14

APPLICATION NOTE

U-68A

r

1/f-j

T

too

-----

VL

-0

toff

D.il/2

~

I

tM

+

toff

I I
I
--tI

2

i.

=

T (1

I

-

~i~) i~ =

EO)
Em

Eo
Ttoff

00

D.i I

:Co
I~T

--12 T21.-

vESR

-

il max - il min

D.i2

D.Q

Figure 2e

T

L

D.iJ

Vc

=

Ein - EO t

i1

Figure 2d

ton

Ein

-Eo

Figure 2b

i2

TE2..

tou

Figure 2a

Figure2c

too
Ein -Eo

i2

il-Io

D.i2

D.il

I

Eo

D.vc

D.Q
C

1

D.iJ

2

2"
C

!.
2

D.iJ
SfC

t

.~

~

~V
T

D.VESR

D.iI

ESR

0

eo

Vc

+ VESR

Figure 2f

eo
D.e o

D.vc OR D.VESR, whichever is greater.

NOTE: See Appendix A for rigorous analysis and justification

Figure 2. Switching Regulator Waveforms

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III

APPLICATION NOTE

U-68A

Figure 2 shows some of the important waveforms and
equations which define the operation of the switching
regulator power circuit. The following discussion is
based on several simplifying assumptions which are
explained and justified or corrected in Appendix A.
The most significant assumptions are to neglect the
saturation voltage of 01, the forward drop of D1, and
the series loss resistance, Rs, of the inductor, L.
Figure 2a shows the voltage across inductor, L, which
equals (Ein - Eo) during to", and (-Eo) during toft.
Under equilibrium conditions, when output load current, 10, is constant, the average voltage across L
must, by definition, equal zero.
Figure 2b shows the current il through the inductor.
Under equilibrium output current conditions, the increase in current during too. ,1h must equal the decrease in current during toft. The average value of II
equals the output current, 10.
Figure 2c shows current i2 through the capacitor,
which is equal to (il - 10). The average value of
i2 = 0, and Ai2 = Ail' Current i2 causes a ripple voltage to appear at the output. The output ripple voltage,
eo, has two components, a capacitive component, Ve,
and a resistive component, VESR, caused by the equivalent series resistance of the capacitor.
Figure 2d shows the capacitive component, Ve, of the
ripple voltage, which is the time integral of the capacitor current, i2. Note that Ve is the integral of a triangular
wave, and is not sinusoidal. Also note that Ve is in
"quadrature" with i2, in the sense that Ve min and Ve
max occur at times A and B, midway in the too and toft
intervals, when b is zero. The total charge, AO flowing
into C is computed graphically by finding the area of
the triangular current waveform between time A and
time B (Area = Y2 bh; AO = Y2 x r/2 x Aid2). The

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peak to peak capacitive ripple component AVe =
AO/C = Aid8fC. (The factor 8f for a triangular current waveform is comparable to 21Tf for a sinusoidal
input current.)
Figure 2e shows the resistive component, VESR, of the
ripple voltage which simply equals i2 x ESR, and is
in phase with b.
Figure 2f, the total output ripple voltage, eo, is the sum
of the waveforms in Figures 2d and 2e. Note that since
Ve and Vm are in quadrature, the greater of these two
components dominates, and for all practical purposes
the peak to peak output ripple voltage, Ae o, is equal to
either AVe or AVESR whichever is greater.
The magnitude of VESR in comparison with Ve shown in
these waveforms is not exaggerated. Indeed, when
designing a switching regulator to operate at frequencies greater than 20 kHz in order to achieve small size
and low cost in the Land C filter elements, the ESR of
the capacitor usually dominates completely. Even
when high quality capacitors (low ESR) are employed,
it is usually necessary to use a larger capacitance
value than would otherwise be required in order to
realize the ESR required to achieve the ripple objective of the design.
With conventional free running switching regulator
control circuits, capacitor ESR also causes very significant departure from the design frequency, which
can result in large ripple magnitude, inductor saturation, and switching transistor failure. In the circuits
developed at Unitrode and presented in the next
section, the frequency-variation effect caused by ESR
is effectively eliminated, leaving only the ripple consideration.
Detailed design considerations for switching regulator
power circuits are contained in Section IV.

U-68A

APPLICATION NOTE

III. Applications Circuits for Switching Regulators
The design and performance of conventional switching regulators are usually dominated by the ESR of the
output capacitor. However, in the group of circuits
described in this section, the following parametric relationships and circuit characteristics are easily and
economically attained:
• The switching frequency may be selected
and established at the optimum value for the
switching components, and will be independent of the value of the ESR of the output
capacitor.
• The value of toff is held relatively constant,
over wide ranges of load current and input
voltage, and independent of the ESR of the
output capacitor. Constant toff results in constant ripple current and output ripple voltage.
• Settable overcurrent limiting is provided,
thereby protecting both the load and the
switching transistors under all conditions,
and preventing saturation of the power inductor during the startup transient period,
thereby minimizing startup overshoot.
•

•

The overcurrent limiting circuit is significantly
lower in dissipation than conventional
current-limit-feedback arrangements.
The drive current to the power output (switch)
stage is regulated to a pre-determined value,
for best efficiency and optimum switching
speed. Drive current is automatically increased at low temperatures and decreased
at high temperatures, thereby maintaining
optimum drive conditions for the power
switch.

3 typifies this family of regulators. It is shown implemented by the popular LM305 regulator IC, and a
Unitrode Series PIC600 Hybrid Power Switch, comprising a quasi-Darlington switching transistor, a fast
recovery catch diode, and transistor bias resistors,
all matched for optimum efficiency and switching
speed (up to 100 kHz without derating). The configuration of Figure 3 is a positive output regulator, with
performance characteristics as follows:
Ein

5V ±

Aeo

1%

100 mV p-p (2% p-p ripple)

10 =
Isc

2 to 10A
12A

Regulation versus Ein (20 to 40V)

< 25 mV

Transient Recovery Time for step change in load
current from 2A to 10A. or 10A to 2A < 150
fLsec.

=

50 kHz nominal

Efficiency> 70%
The circuit of Figure 3 operates in the fixed-oft-time
mode; hence, output ripple is independent of input
voltage over wide ranges. In this circuit, two feedback
signal paths are provided:
•

Note that, although the use of this circuit approach
permits essentially constant "toff" operation even with
capacitors having relatively high ESR, the output
ripple voltage is increased by high ESR. (If the ripple
developed across ESR is significantly larger than that
developed across C, then the ripple is essentially
proportional to ESR.)
Not all of the circuits that follow have all of the virtues
listed above, but the exceptions will be noted. Figure

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Eo

15·17

DC Feedback. A fraction of the DC output
voltage, Eo, is fed back to the inverting input
of the LM305 through voltage divider R1, R2.
The DC voltage at the inverting input is compared to a reference voltage (approximately
1.8V) within the LM305, and the LM305 regulates Eo so that the voltage fed back to the
inverting input is essentially equal to the built
in reference Voltage. The R1, R2 divider ratio
therefore establishes the level of the DC output voltage, Eo. Resistor R5 improves output
voltage regulation versus input voltage
changes by feeding a small compensating
voltage proportional to the input voltage into
the inverting input of the LM305.

II

APPLICATION NOTE
• AC Feedback. Capacitor C1 feeds back an AC
voltage waveform to the inverting input of the
LM305. This voltage is proportional to the output ripple voltage plus the AC voltage developed across R,. tJ.eo + tJ.VR"
Capacitor C2 feeds back an AC voltage to the
non-inverting input of the LM305. This voltage
is proportional to the output ripple voltage plus
the AC voltage across R3, tJ.eo + VRl.
When the circuit values are properly established, the
same, fraction of tJ.e o is fed back to both inverting and
non-inverting inputs, thereby effectively cancelling.
The operation of the switching regulator is thus rendered independent of the output ripple voltage developed across the C or ESR of the output capacitor.
Since the tJ.e o components cancel each other, the
LM305 essentially compares tJ.VR' at the inverting input
to tJ.VRl at the non-inverting input. Voltage tJ.VRl is a
rectangular waveform with a peak-to-peak amplitude
equal to I drive x R3, where I drive is the base drive
to the hybrid switching transistor provided by the
LM305, and aVR' is a triangular waveform with a peakto-peak amplitude equal to tJ.i l x R" where tJ.i l is
the ripple current through inductor L. When the drive
current is on, aVRl is at its peak positive amplitude. As
i1 increases, VR' increases proportionately. When the
positive amplitude of aVR' reaches aVR3, this causes
the LM305 to switch off the drive current, aVRl immediately drops to its peak negative amplitude, and i1
starts to fall. When aVR' reaches a negative amplitude
equal to aVRl, the LM305 switches the drive current
back on, and the process repeats. In this manner, the
LM305 controls the power switch so that ail is fixed.
Since toff = ail x L/Eo, with fixed values of Land
Eo, toff is fixed and independent of changes in Ein
or capacitor C or ESR values.

U-68A
Current-limiting action is provided by transistor 01,
the collector of which is connected to the "gate" or
"inhibit" terminal of the LM305 (pin 7). When the load
current is normal, 01 is cut off and pin 7 floats; but
when the voltage drop across R, increases to a value
greater than the sum of VBE (01) and VRl, 01 turns on,
cutting off the drive current from the LM305 and, ultimately, the power switch. This cutoff action is made to
"latch" by the fact that, with the drive cut off, VR3 disappears. This keeps 01 on, until the current through
R, drops significantly - enough to make the voltage
drop across R, fall below the VBE of 01.
The current through Rio' following such an overload
cutoff action, falls linearly at the rate of Eo/L. When
01 is cut off, drive current is restored. The circuit will
then continue to switch on and off at a frequency comparable to normal operation, with the average current
limited at the design limit, and power dissipation held
to safe values.

L
22 .... H

R,
006

+---+-0'

Co
240 .... fd
o025 !l

R4, connected between pins 1 and 8 of the LM305,
establishes the desired level of base drive for the
PIC600 Series Hybrid Power Switch, and determines
the hysteresis voltage across R3.

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E out

Figure 3. Positive Voltage Switching Regulator

15-18

U-68A

APPLICATION NOTE
Transient response of the switching regulator of
Figure 3 is shown in Figures 4,5, and 6.

~

/

Output

L

Volts

/

a

!J
a

100

200
Time.

300

400

500

~sec

Figure 4. Ein from 0 to 25V

O~I~~~t

3+---+--+---+--+---1

rectangular current pulse associated with the power
switch turning on and off from propagating into the
Ein supply line. The capacitance value required is a
function of the impedance characteristics of the Ein
supply and intervening wiring. Watch out for underdamped resonance with the inductance of the input
wiring, or transient induced ringing may occur. The
input capacitor must have short leads, and the ground
side should preferably be connected directly to the
ground side of the output filter capacitor.
A 10A negative voltage switching regulator, utilizing
an LM304 and PIC600 series, is shown in Figure 7.
A reference voltage is determined by resistor R1 and
R2. The error amplifier controls the output voltage at
twice the voltage across R2. Diode 01 is used to ensure a potential difference of less than 2V at the unregulated input (pin 5) with respect to the reference
supply (pin 3). (If the unregulated supply terminal gets
more than 2V positive with respect to reference supply, the collector isolation junction of transistor 06 of
LM304 becomes forward biased and disrupts the
reference.)
Current limiting is achieved, in Figure 7, by means of
reducing the reference voltage to ground with the
help of transistor 01 and resistor R8, instead of turning off the base drive to the power output switch as
in Figure 3.

0+---+--+---+--+---1
o
100
200
300
400
500
Time

~sec

Figure 5.10 from 4A to 10A

The functions of the rest of the components and the
operation of the switching regulator are the same as
described for Figure 3.
IV"

A positive switching regulator using a /LA723 is shown
in Figure 8.

Output

The basic performance and circuit operation is the
same as Figure 3.

Vol Is

The circuit shown in Figure 9 is a high voltage positive
switching regulator. Because the LM305 (like almost
ailiC regulators) cannot be operated at supply voltage
in excess of 40V, this circuit uses a fraction of Ein as
a power supply for the IC circuit by means of zener
diode and current limiting resistor R9. The voltage
isolation between LM305 and power switch, and the
regulated base drive to the power switch are provided
by transistor 02.

at
a ------:'+00--,-----:2+00--,-----:3+00--4+00---1
500
Time, .usee

Figure 6.10 from 10A to 4A

It is usually necessary to employ a noise filtering
capacitor across the input of any switching regulator.
This functions to prevent the steep waveform of the

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15·19

•

U-68A

APPLICATION NOTE
The basic operation of the circuit and design approach is the same as that of a low voltage positive
switching regulator.

The circuit shown in Figure 10 is a negative high voltage switching regulator.

This circuit is similar to the low voltage negative
switching regulator with a minor modification. Transistor Q2, resistor R1 0 and R11 are all used to provide
regulated base drive to the power output stage and
also to provide the voltage isolation between power
output stage and LM305. The resistor R9 is used to
limit current through zener diode under steady state
and startup conditions .

• '0 ~-r.;¢-...,--,

01

e1

R5

007

R6

22

Eout

'---1---"--0- Eoul

I

RB

Co
240~f

R2

':" 0.02511

82011

3BK

Figure 7. Negative Voltage Switching Regulator

Figure 9. High VOltage Positive Switching Regulator

- - - - - -.,-..-<>,-..,
-

+ Em

R6

R6

15K

22K

R,
006

'---+......6-<)

+Eout

Eoul

e2
001p.f

R2

47K

T e 24Of"
o

-=

002511

82011

Figure 10. High Voltage Negative Switching Regulator

Figure 8. Positive Voltage Switching Regulator

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U-68A

APPLICATION NOTE

IV. Designing the Power Circuit
In designing a switching regulator power supply, the
following parameters will normally be predefined.
Specific values shown for each parameter will be used
as the basis for a design example:
Eo

5V Output Voltage
100 mV Output Ripple Voltage,
Peakto Peak

lomax

1OA Output Current, Full Load

lomin

2A Output Current, Minimum Load

Ein max

40V Input Voltage, Maximum

Einmin

20V Input Voltage, Minimum

Frequency

Power output
DC losses
Switching losses
Total power Input
Real izable efficiency

High frequency operation is distinctly advantageous
in that the cost, weight and volume of both Land C
filter elements are reduced. However, above the frequency where the capacitor ESR exceeds its capacitive reactance, no further reduction in capacitor size
or cost will occur. This frequency, in the range of 1-50
kHz, depends upon the "quality" of the capacitor in
terms of ESR. Above this frequency, the inductor will
continue to diminish in size and cost, although when
the inductor reaches a very small size, cost will
level off.

The main factor limiting high frequency operation is
the drop in efficiency caused by switching losses in
the power switching transistor and "catch" diode. The
higher cost of these fast switching semiconductors required to operate efficiently at high frequencies must
be weighed against the reduced cost, size and weight
of the Land C components to arrive at the optimum
frequency for any specific application. It may be desirable to work the design through at several frequencies in order to make a decision.

20kHz

50kHz

50
10
1
61
82%

50
10
2.5
62.5
80%

100 kHz
50
10
5
65
77%

Transistors and diodes which do not have the fast
switching capabilities of the PIC 625/635 will become efficiency limited at much lower frequencies.
Note that in this specific application, a dissipative
regulator design will incur power losses in the series
transistor of 350W, resulting in an efficiency of 12.5
percent!
The control circuits shown in the previous section
control the on-off switching periods by sensing and
controlling the ripple current, ~h, through the inductor
L. This mode of operation results in a constant ripple
current and (assuming Eo and L are fixed) constant
off time, toff , independent of input Voltage. The relationship between toff , f, Eo, and Ein is as follows (from
Figure 2a):
toff =

(1 - Eo/Ein) / f

With toff and Eo fixed by the control circuit, f will
change when Ein changes, and f will be maximum
when Ein is maximum. In our specific example,
fmax
Ein max
Eo

In the specific application defined at the beginning of
this section, the power output (Eo x 10 max) is 50W.

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1 kHz
50
10
0.05
60.05
83.3%

For our example, we will choose a frequency of
50 kHz, even though the efficiency is not significantly
reduced at 100 kHz. At 100 kHz most currently available tantalum and aluminum electrolytic capacitors
begin to exhibit series inductance.

The first step in the design is to decide on the operating frequency of the switching regulator. No concrete
rules can be given for this decision.

Operation above 20 kHz is desirable to eliminate the
possibility of audio noise.

Referring to the specification for the Unitrode PIC
625/635 Hybrid Power Switch, the DC losses (Transistor VeE"" Diode VF) under the conditions of this
application amount to 10W. The following tabulation
shows the switching losses and overall efficiency at
several frequencies.

15-21

50 kHz
40V
5V

APPLICATION NOTE

U-68A

so that:
toff =

3.
(1

-

5/40)

/

50,000 =

17.5fLsec

Now, with toff fixed at 17.5 fLsec, if Ein changes to Ein
min
20V,

=

f
moc

(1 - Eo/Ein)
ton

=

(1 - 5/20)
17.5 X 10 6

=

43 kH

z

The fact that the frequency changes slightly with Ein
is really not important, as stated earlier, because constant toff operation results in more constant output
ripple than constant frequency operation.
Having determined (or assumed) the maximum operating frequency and calculated toff, we next proceed to
find specific values for Land C. Land C together form
a low pass filter which reduces the rectangular waveform at the filter input to a DC output voltage, Eo, with
a small amount of ripple, Aeo, superimposed. To
achieve a specified Ae o requires a specific LC product, independent of load current. Theoretically, this
LC product can be achieved with any LlC ratio - small
L and large C, or large L and small C (or very large L
and no C at all, using instead the load resistance RL as
one element of an LI R filter). There are, however, several practical economic and performance considerations that apply to selecting specific Land C values.

Losses in a practical inductor are higher
than in a capacitor with equal energy storage capacity (assuming low ESR). This
again argues for small L, large C.

One major objection to a low LI C ratio is that it causes
large and sometimes intolerable overshoot in input
current and output voltage on startup, when the circuit
is first energized. Input current overshoot can saturate
the inductor and destroy the switching transistor. The
current limiting feature of the applications circuits
shown in Section III effectively controls the startup
transient, thereby protecting all components and minimizing voltage overshoot. With current limiting, this
problem is eliminated and no longer pertains to the
selection of Land C values.
Referring to Figure 2b and its associated equations,
the peak-to-peak ripple current through the inductor,
Ail, is inversely proportional to the inductance, L. As L
is made smaller, Ail increases. Maximum limits on Ah
determine how small L is permitted to be, as follows:
1.

1.

Under the power and frequency ranges
commonly encountered in switching regulator circuits, it costs more to store energy
in an inductor than in a capacitor. Also, an
inductor will have considerably greater
weight and volume than a capacitor with
equal energy storage capacity. Small Land
large C, within the limits defined below, will
usually result in the lowest cost, weight and
size design.

The instantaneous current through L ranges
between a maximum of 10 + Aid2 and a
minimum of 10 - Aid2. If Aid2 is permitted
to become larger than 10, the minimum inductor current becomes a negative value.
This is impossible, since neither the switching transistor nor the "catch" diode will
conduct. Therefore, the switching regulator
goes into a discontinuous mode of operation which is perfectly safe, but the frequency changes considerably and regulation with output current changes becomes
relatively poor. The worst case consideration to insure that discontinuous operation
does not occur is to make Aid2 equal to the
minimum load output current, 10 min, or
Ail = 2 10 min.

2.

Small L and large C results in low "surge
impedance" of the filter, hence better transient behavior with step changes in load
current.

It is not practical to apply this criterion if 10
min is very small «0.05 10 max) because
Ail would then be very small, forcing an impractically large L value. In applications

It is favorable to push in the direction of small Land
large C for the following reasons:

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15·22

APPLICATION NOTE

U-68A

where 10 min is very small, there are two
alternatives: (a) raise 10 min by preloading the supply, or (b) make 8i l = 2(0.05
10 max) = 0.1 10 max realizing that when
10 becomes less than 0.05 10 max, the discontinuous mode will occur.
2.

The maximum peak current is equal to the
full load current, 10 max + 8id2. As L is
decreased, the corresponding increase in
8i 1 will begin to cause a significant increase
in the maximum peak current. Since the inductor must be designed not to saturate at
the maximum peak current, this begins to
negate the cost, size and weight advantages
of making the L value smaller. Higher peak
currents will have an adverse effect on efficiency and transistor drive requirements,
and may require transistor and "catch" diodes with higher current ratings (and higher
cost). It is, therefore, recommended that
8id2 be no greater than 0.25 10 max, which
will limit the maximum peak current to 1.25
10 max, or 8i l max = 0.510 max.

The final step is to determine the requirements for
the capacitor C and ESR values which will result in the
desired output ripple voltage, 8e o. Since the two components of 8eo : 8Vc and 8VESR, are in "quadrature",
we can consider each component separatelY, with a
worst case error of less than 20 percent when both
components are equal. This much error is highly unlikely, since the ESR component usually dominates
completely when operating at high frequencies.
From Figure 2d:

C =

note that C varies inversely with f. In order to achieve
8Vc less than the desired maximum 8e o, the minimum
value for C must be determined at the lowest frequency, fm", calculated previously.

Cmin

8 x 43 X 10 3 x 100 X 10- 3
114 jLF

In summary:
210 min, within the following
somewhat arbitrary limits:
8i 1 min

0.110 max

8i 1 max

0.510 max

Now that toff and 8i 1 have been determined, L can be
calculated as follows:
L

=

Eo

X

toff

-~

5x17.5x10
4

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From Figure 2e:
ESR max

In our example, 10 min = 2A, 10 max = 10A. Calculating 8i l = 2 10 min = 4A, which is acceptable
since 8i 1 max = 0.5 x 10A = SA, and 8i 1 min ;= 0.1
x 10A = 1A.

6

21.9 jLH

8i ,
8f8V,

8VESR
8i 1
100xlO- 3
4
0.025n

With high frequency operation, capacitor ESR usually
dominates, forcing the use of a C value much greater
than C min in order not to exceed ESR max.
Subsequent sections deal with designing the inductor
and selecting the capacitor and other components of
the switching regulator.

15-23

•

U-68A

APPLICATION NOTE

V. Design of the Power Inductor
This simplified nomographic method facilitates selecting the smallest core that will achieve the desired
characteristics of the power inductor. This procedure
is useful in selecting the proper core and determining
wire size, number of turns, copper losses, and temperature rise. It also permits investigating the effects
of change in assumed initial conditions and in "trimming" the design.
A detailed analysis of this inductor design procedure
is contained in Appendix B.
Tables 1 and 2 give core parameters for a variety of
commonly used ferrite pot cores and MO-Permalloy
toroids. (Note: There is no significance to the selection of manufacturers, nor is any intended. Many manufacturers make roughly equivalent cores in these
sizes, with similar magnetic properties.)
Ferrite and Mo-Permalloy powder are excellent core
materials for the switching regulator inductor. Since
the rms AC current through the inductor is small
compared to the DC current, AC losses in the winding
and core losses will be negligible compared with DC
winding losses.
Selection of the proper core for a specific application
is a process concerned with two factors: (1) The core
must provide the desired inductance without saturating magnetically at the maximum peak overload current, h max. In this respect each core has a specific
(Ll2)"t energy storage capability. (2) The core must
have a window area for the winding which admits the
number of turns necessary to obtain the required inductance with a wire size which .will result in acceptable DC losses in the winding at the full load output
current, 10. Each core has a specific (Ll2)di" capability
that will result in a specific power loss or temperature
rise.
The significant core parameters are primarily core
size and the magnetic gap in series with the flux path.
Consider a very small (for the application) ferrite pot
core with no air gap. The effective permeability, "".,
will be very large because there is no gap. Relatively
lew turns will be required to achieve the desired inductance, and the power loss at 10 will be small, but
the core cannot store the required energy L(il max)2
without saturating. If we introduce a gap into this core,
the energy storage capability increases (the extra
energy is actually stored in the gap, not in the ferrite
material). However, the gap causes the effective permeability to drop, which requires more turns of finer
wire to achieve the desired inductance. If the core is

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too small, as the gap is increased to the point required
to achieve the necessary energy storage capability
without saturating, the DC resistance of the increased
number of turns of finer wire has increased to the
point where the power dissipation and temperature
rise is too great. This conflict is resolved by going to
a larger core with appropriate gap.
To facilitate core selection, Tables 1 and 2 contain
tabulated values of (Ll2)", energy storage capability
(saturation limited) and (Ll2)25C capability (based on
power dissipation resulting in 25°C temperature rise).
These values have been calculated for various size
cores with different gaps, by methods described in
Appendix B. Also given in the tables are the power
dissipation corresponding to a 25°C rise for each core
size, and the effective window area for the winding,
Aw'. Tabulated AL values relate to different gaps. (AL is
the inductance index at a particular gap setting defined as the inductance in mH for 1000 turns.)
The optimum cores for switching regulator inductor
applications generally have quite large gaps, and
consequent relatively low AL values. This is fortuitous,
since the core properties are then dependent mostly
on the gap itself, and variations in the magnetic materials of the core are swamped out, resulting in
excellent stability and linearity. Note, however, that
in the ferrite pot core table, many of the lower AL
values are not supplied as stock items by the manufacturer, and the desired gap must be ground to size
on a special order basis.
Mo-Permalloy powder cores are effectively "gapped"
by the manufacturer by means of varying the amount
of non-magnetic binder that holds the Mo-Permalloy
particles together within the core, and by the size and
shape of the Mo-Permalloy particles. Thus, the "gap"
is actually distributed throughout the core material.
These cores are supplied with many different AL values
in each size.
One of the main advantages of ferrite pot cores and
ferrite E-I cores (not tabulated, but worth considering)
is that the winding is easily formed on a bobbin which
is subsequently assembled within the two-piece core
assembly. Ferrite toroids are not recommended because of the practical difficulty of introducing a gap.
Mo-Permalloy toroids are not as convenient to wind,
but this is not a serious problem as most switching
regulator inductor designs require few turns of relatively heavy wire.

15-24

APPLICATION NOTE

U-68A

Example of Inductor Design
Power loss in inductor;

The example shown below will illustrate the method of
solution, as drawn on the nomograph of Figure 11.

Actual Pw

Given:
L
10
il max
Eo x 10

21.9p,H
10A
14A (current limited)
50W (output of regulator)

II 2
P25C X (lI 2 )25C

0.547 x 22;:8 W
0.524W
Actual power loss in the inductor as a percentage of
the power output of the switching regulator is:

Copper losses not to exceed 1% of
output power, and temperature rise of
inductor not to exceed 25°C.

Pw x 100% ==
Eo x 10

0.524 x 100% _ 1050;'
50
-.
°

If power losses are not acceptable, then select a core
with higher (LI2J,sc capability.

Step 1: Draw line 

t o.5

0.02~

[50

20

1

o.~

1

0.5

18

(11

i\l
0>

20
10
U2
(mJ)

1

AL

.J

15
14

1.01
2

0.005-1

SOl

13
2.0-4

12
11

5.0-'

.002--'
I
(Amp)

L
(mH)

100J
N

Aw'
(em2)

10
WIRE
GAGE

c:
en
I

Figure 11. Inductor Design Nomograph

00

»

APPLICATION NOTE

U-68A
Table 1. Ferrite Pot Cores
Power
Dissipation

Ferroxcube

Dimensions
(Inches)

Part No.

1107·Al00-387
1107 -A 160-387
1408-A100-387
1408-A 160-387
1811-A 160-387
2213-A160-387
-387
26162616-A250-387
3019-387
3622-387
4229-387

·
··
·

2S°C rise
(watts)

Window Area
0.65 Aw
(cm')

Inductor
Index

Saturation
Limit
(mJ)

Dissipation
Limit
2S°C rise
(mJ)

(~O)

(HT)

(P"c)

(Aw)

(AL)

«LI')..,)

«LI')"c)

0.445
0.445
0.559
0.559
0.716
0.858
1.024
1.024
1.201
1.418
1.697

0.264
0.264
0.334
0.334
0.428
0.538
0.640
0.640
0.754
0.880
1.16

0.100
0.100
0.158
0.158
0.259
0.358
0.547
0.547
0.754
1.04
1.60

0.034
0.034
0.063
0.063
0.122
0.193
0.263
0.263
0.382
0.486
0.910

100
160
100
160
160
160
160'
250
200'
200'
200'

0.200
0.144
0.490
0.324
1.02
2.12
5.06
3.24
8.57
18.4
31.8

0.077
0.124
0.180
0.288
0.719
1.32
2.29
3.58
4.90
7.21
17.9

','

"

* Indicates not stock Item Gap must be ground to obtain desired AI

Table 2. Mo-Permalloy Torolds
Power

Arnold
Part No.

A-307032-2
A-051 027-2
A-189043-2
A-059043-2
A-894075-2
A-291061-2
A-298028-2
A-085035-2
A-087059-2

Dimensions
(inches)

Dissipation
2S°C rise
(walls)

Window Area
O.SAw
(cm')

Inductor
Index

Saturation
Limit

Dissipation
Limit
25°C rise

(mJ)

(mJ)

(00)

(Hn

(P"c)

(Aw1

(AL)

«LI')..,)

( (LI')"cl

0.425
0.530
0.710
0.930
1.09
1.33
1.33
1.60
1.875

0.180
0.217
0.280
0.330
0.472
0.457
0.457
0.605
0.745

0.072
0.125
0.209
0.346
0.520
0.708
0.708
1.04
148

0.082
0.192
0.319
0.703
0.781
1.47
1.47
2.14
2.14

32
27
43
43
75
61
28
35
59

0.180
0.296
0.782
1.55
3.40
4.54
9.90
20.1
40.2

0.065
0.199
0.659
2.06
4.32
8.97
4.12
8.65
16.0

III

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15-27

U-68A

APPLICATION NOTE

VI. Component Selection
1.

Power Switching Components
Voltage ratings of the power switching transistor and
catch diode must be greater than the maximum input
voltage, Ein, including any transient voltages that may
appear at the input of the switching regulator. Low
transistor VCb,t and diode VF at full load output current
are important considerations to maintain high efficiency (Ref efficiency calculations - Appendix A).

Fast switching diodes and transistors are required to
maintain good efficiency in high frequency switching
regulators. Transistor switching losses become significant when combined rise time plus fall time exceeds approximately 0.025 x 'T. Thus, for 50 kHz
operation, t, + tf should be approximately 0.5 /Lsec
or less. Transistor delay and storage times do not
affect efficiency, but cause delays in turn on and turn
off resulting in lowering the frequency of operation
and increasing ripple. Combined td + t, should be
less than 0.05 x 'T.
Unitrode manufactures a broad variety of fast switching
power transistors and Darlingtons, which are listed in
the Power Transistor & Darlington Product Selection
Guide. Their combinational high voltage, high current,
low saturation voltage and medium to fast switching
characteristics make them ideal for this application.
'-.J

The diode reverse recovery time must be no more
than about half the current rise time through the transistor. If this requirement is not met, large amplitude
reverse recovery current spikes will be drawn from the
input power supply causing severe EMI probl.ems.
Large transient currents through the transistor may
cause degradation or second breakdown. Referring to
Figure 1, Section II, during the time that the transistor
is off, the catch diode is conducting the output current,
10, and the transistor VCE equals Ein. When base drive
is applied to the transistor to turn it on, current through
the transistor rises from 0 to 10. During this current rise
time interval, t,;, the diode remains in forward conduction, but the diode current declines from 10 to 0, since
the inductor maintains the total current at a constant
value equal to 10. If the diode has recovered at the end
of the t,; interval, the voltage across the transistor will
start to decrease and the diode will go into the reverse
direction. This period of time is the transistor voltage
rise time interval, t,,, which is terminated when the
transistor VCE reaches VCE"t and the diode VR reaches
Ein. If the diode has not recovered at the end of the t,;
interval, it will remain a low impedance instead of proceeding smoothly into the reverse direction. Transistor
current will increase well above 10 until the diode

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recovers, pulling the additional current through the
diode in the reverse direction.
This problem has probably caused more grief in
switching regulator applications than any other, and
almost completely dominates diode selection. Diode
switching losses will be completely negligible if the
diode is fast enough to minimize the recovery problem, i.e., two to three times faster than the transistor
turn-on rate.
Unitrode UES rectifiers, listed in the Rectifier Product
Selection Guide, are uniquely suited to this type of
application. With low forward drop and typical recovery
time of 20 nsec from forward currents as high as 50A,
they cause no discernible recovery spike when used in
conjunction with Unitrode's medium frequency switching transistors.
Unitrode PIC600 Hybrid Power Switches summarized
in the Switching Regulator Power Circuits Product Selection Guide combine in a single package the UES
rectifier and power switching transistor with its associated drive transistor and bias resistors. Power transistor, drive transistor and rectifier are matched to
optimize switching speeds and VCE sat. Available in NPN
and PNP versions, the PIC600 series can operate at 50
kHz with only 2.5 percent loss of efficiency compared
with operation at lower frequencies. Significant reduction of EMI can be achieved because of the reduction of
circuit wiring.
2. Output Filter Capacitor.
The most difficult component selection problem for
high frequency switching regulator applications is to
find and specify an output capacitor with suitably low
ESR. Most tantalum and aluminum electrolytic capacitor types do not have ESR specifications (probably
because ESR is not very good). In some cases, the
dissipation factor, OF, is given in the specification.
However, OF is usually specified at 60 Hz, which is
more indicative of effective parallel resistance, and is
virtually useless in determining ESR. When OF is
specified at 1 kHz or higher, it may be used to determine ESR:

ESR =

OF (%) x 0.01 x Xc =

OF

(O;lf~ 0.01

The power circuit design example given in Section IV
requires an output capacitor with Cm;n of 114 /Lfd and
ESRm" of 0.0250. The capacitor which comes closest
to meeting this requirement (after a limited search) is
solid tantalum, Mallory THF, 120 /Lfd @ 10V. This
capacitor has a max OF of 8% at 1 kHz, which defines
ESRm" = 0.1060. ESR is typically 0.050. Two of

15-28

APPLICATION NOTE

U-68A

these capacitors in parallel are required, based on
typical ESR, to achieve an ESR of 0.0250; four in
parallel are required, based on ESR m" of the capacitor.
The aluminum electrolytic which comes closest (again
based on a limited search) is the Sprague 6720 series,
1000 /Lfd @ 12V, which has an ESR m " of 0.0650 @
50 kHz. Typical ESR is 0.0250. In either case, a much
larger C value is required in order to achieve the desired ESR. This does have the advantage of reducing
transient voltage changes with sudden changes in
load current.

In the design example of Section IV, AeoRMs = 0.033V,
which is less than the 0.05V max ripple rating of the
10V Mallory THF capacitor, and Ai RMs ::= 1.14A, which
is less than the 2.47A max ripple current rating of the
1000 /Lfd, 12V Sprague 6720 capacitor.

It is worth noting again that with the control circuits
shown in Section III (unlike conventional switching
regulator control circuits), the operating frequency
will remain relatively constant, regardless of ESR, although the output ripple voltage will vary directly with
ESR. In some cases, it may be economically advantageous to increase the value of L (and the size and
cost of the inductor) in order to reduce ripple
current, Ail = Ai 2 , and thereby increase the ESR m"
requirement.

3.

In addition to considering the C and ESR values and
appropriate voltagje derating for the application, most
capacitors have maximum RMS ripple current or max
RMS ripple voltage ratings which should not be exceeded. Actual RMS ripple current and voltage in the
application can be calculated as follows:
AeoRMS
Ai RMs =

Series inductance of the capacitor is usually not significant compared to ESR at frequencies below 100
kHz. However, inductance can become dominant if
good wiring practices are not followed. Specifically,
the ground side of the catch diode should be returned
directly and as close as possible to the ground side of
the capacitor, and capacitor lead length including
circuit wiring on both sides of the capacitor should
be minimized.

Aeo p-p/3.0
Ail p-p/3.5

Control Amplifier and Reference.

Control circuits for switching regulators can be designed around IC operational amplifiers and separate
voltage references, or around low power voltage regulator IC's which have built-in references. Voltage regulator IC's such as the LM304, LM305, and /LA723
have the added advantage that the output current they
provide to drive the power switching transistor can be
caused to diminish at higher temperatures, which
conforms to the transistor drive requirements vs. temperature and helps to maintain optimum switching
speeds over a range of temperatures. Amplifiers used
in the control circuit should be uncompensated in order to obtain fast switching speeds, otherwise the
delay times introduced will result in lower frequency
operation and larger ripple amplitudes, and may
cause circuit instability.

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15·29

U-68A

· APPLICATION NOTE

Appendix A
Analysis of Power Circuit
The design equations for the switching regulator
power circuit used throughout this design guide were
based on several simplifying assumptions, which will
now be dealt with.
The simplified equations neglected the effect of
"catch" diode forward drop, VF, transistor saturation
voltage, V"" and the IR drops in the inductor and current sensing resistor, 10 Rx. If a design is implernented
using the values of L, C, ESR, and ~i derived from the
simplified equations, then too, toff , f, and ~eo will differ
from the design values because of the effect of the
simplifying assumptions as follows, from Figure 2b:
Simplified :
~il

(Ein - Eo)ton
L

(1 )

~il

(Ein - Eo - V"t - 10 Rx)ton'
L

(2)

Eotoff
-L-

(3)

Exact:

Simplified:
~h

Exact
~h

(Eo

+ V + 10 RX)toff'
D

L

(4)

Note that ~il is fixed, because the control circuit controls this value directly. Instead of the original design
values of ton and toff , actual values to: and toff' will be
observed. Since ~il is fixed, we can equate Equations
(1) to (2) and (3) to (4):

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(Ein - Eo)
(Ein - Eo - V"t - 10Rx)

and

Eo
toff

Eo

+ VD + 10Rx

Although the actual toff' is less than the assumed toff,
ton' is greater than the assumed ton, so that their net
effect on the operating frequency is reduced. In the
worst-case, when Eo is small (5V) and Ein is high
(50V), the actual frequency will be 25 percent higher
than the original assumed frequency, resulting in a
very slight drop in efficiency. Output ripple component ~vc will be smaller because of the higher frequency, and ~VESR will not change because ~h is fixed.
Component tolerances will result in larger deviations
than those caused by the use of the simplified
equations.
The only other assumption that could have possible
significance is that the transistor switching times
are negligible at the highest frequency of operation.
The validity of this assumption is normally assured
by selecting appropriate devices (see Section VI).
This also applies to the speed of the control circuit.
If delay time through the control circuit in addition to
transistor turn-on and turn-off times is significant with
respect to the total period, 7', the consequent delay in
turning the power circuit on and off will cause a proportional increase in ~il and ~eo, and a proportional
decrease in frequency.

15-30

U-68A

APPLICATION NOTE
Efficiency Calculations: The efficiency of a switching
regulator depends upon the factors given in the following equation:

Ppout x 100%

Efficiency =

In

Eo x 10
-

+ PT+ Po + PT + po + PL + PI + Pc + Pc

Eo x 10

Note that the worst case for each factor does not
necessarily occur under the same conditions.
1.

DC Losses - Transistor. (Worst case when Ein is
lowest because too is largest.)

4. Switching Losses - Diode.
This is a very complex calculation if diode recovery
time is not much smaller than the transistor rise time,
because the diode will short-circuit the power supply
prior to turn-off, affecting the transistor dissipation,
possibly causing second breakdown, and generating
intolerable EMI. By using a diode whose recovery time
is not more than half the transistor rise time, all these
problems become negligible.
5.

PL =

x 10 x ~

where:

T

where:
2.

too

=

T

Eo
Ein

6.

DC Losses - Diode. (Worst case when Ein is
highest.)

Po = V, x
where:
3.

toff

-

T

-

10 x

X

Rs

DC Losses - Current Sense Resistor. (AC losses
negligible when ~il is small compared to 10.)

102 X RI

7.

AC Losses - Capacitor. (Usually negligible.)

8.

Control Circuit Losses. (Base drive to switching
transistor is dominant, but usually negligible.)

1-~

PT =
t, = t"

10 2

Rs is equal to effective series resistance of
inductor.

PI =

Ein

Switching Losses - Transistor. (Worst case when
Ein is high. td + t, do not contribute to power
losses.)

where:

DC Losses - Inductor. (AC losses are negligible
when ~i 1 is small compared to 10.)

Pc =

Ein x 10 t, :,. tf

+ td ,

tf = t f,

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+ tf;

where:

15-31

·
Ib Xtoo
EInX
- =
T

Eox Ib

APPLICATION NOTE

U-68A

Appendix B
Analysis of Power Inductor Design
This appendix describes the methods used to develop
the core tables given in Section V and the nomographic method for design of the power inductor. Core
parameters for any cores not listed in the tables can
be derived from the equations given.
The following equations provide the basis for this
design approach. Equation (1 a) defines the value of
inductance, L, in terms of basic core parameters and
the total number of turns, N, wound on the core:
N2 X 0.41T

L

f.L:,.

x

10- 5

mH

Core Saturation Limits.

Any specific core has a maximum ampere-turn, NI,
capability limited by magnetic saturation of the core
material. (NI)", is listed in some core catalogs, in
which case the maximum (Ll2)", capability of the core
can be calculated from Equation (2). (NI)", is related
to the saturation flux density, Bs." as follows:
(Nl)sa' =

10

BS~LAe

ampere-turns

(3)

Substituting Equation (3) into (2),

(1a)

B",2 Ae2 x 10-4
millijoules (4)
AL
Values of (Ll2)sa, are given for each core represented
in Tables 1 and 2 of Section III. Equation (2) or (4) was
employed, using values for either Bs.' or NI which
would result in a reduction of AL (and L) of 20 percent
under maximum overload conditions, according to the
core manufacturer's data. The core selected for an
application must have an (Ll2)", value greater than
L(iJ max)2 to insure that the core will not saturate
under maximum peak overload current conditions.
(Ll2)sa, =

effective permeability of core

where:
Re

effective magnetic path lengthcm

Ae =

effective magnetic cross sectioncm2

For most standard cores, the above calculation has
been simplified by listing the compound parameter
AL, called the "inductor index", as follows:

Power Dissipation and Temperature Rise Limits.

L =
where:

AL

N2AL X 10- 6

0.41T f.L~e

x

10

mH

(1b)

mH for 1000 turns

Multiplying both sides of Equation (1 b) by 12,
Ll2 =

(NI)2 AL X 10- 6

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millijoules

(2)

In switching regulator applications, the AC current
component is small compared to the DC current
through the power inductor. Power dissipation in the
inductor is almost entirely DC losses in the winding.
DC resistance of the winding, Rs. is calculated from
the following:

15-32

U-68A

APPLICATION NOTE

Substituting for N from Equation (1 b), and rearranging:
(5)

ohms

R,

LJ2 =

Pl ~l::' x 10-- 6

millijoules

(9)

mean length of turn - cm

where:

effective area of wire - cm 2

P

resistivity of wi re - n-cm

Core geometry provides a certain window area, Aw,
for the winding, but only a fraction of this area can be
occupied by the actual conductor. The effective window area, Aw' is taken as 0.5 Aw for toroids, and 0.65
Aw for pot cores. This allows for wasted area of uniformly wound round wire with HF insulation, allows
for the fact that the central fourth of the window area of
a toroid cannot practically be filled, and allows for a
single section bobbin in the case of the pot core. The
number of turns, area of wire, and effective window
area of a fully wound core are related by:
(6)

Substituting Equation (6) into (5):

~N2

(7)

ohms

Multiplying both sides of Equation (7) by 12 , the power
dissipation in the winding, P, , is:
Watts

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,n
where:

aT =

A, =

A'
- ~cm2
A, N

PAw'

Equation (9) shows that the LJ2 capability is directly
related to, and is limited by the maximum permissible
power dissipation. Using a value for P, that will result
in a 25°C rise in the temperature of the inductor,
values of (LJ2)25C are calculated for each core in
Tables 1 and 2 of Section III. For these calculations,
resistivity, P, is assumed to be 1.9 x 10- 6 n-cm, the
resistivity of copper wire at 65°C. The power dissipation that will result in a 25°C rise is calculated and
tabulated for each core as follows:

=

850~
A,

(10)

temperature rise
surface area of inductor- cm 2

The factor 850 in the above equation represents a
temperature rise of 850°C for 1W power dissipation
from 1 cm 2 surface area, empirically determined for
natural convection cooling. The surface area, A" used
in the calculation is taken as the top and sides of the
inductor, ignoring the mounted bottom surface. Substituting a temperature rise of 25°C:
25 x A,
8sO

(8)

15·33

Watts

(11 )

U-68A

APPLICATION NOTE

Appendix C
Analysis of Application Circuits
The design equations for the critical components and
operating parameters of Figure 3, Section III, are
given below, for the following design objectives:
Eo
Ae o
Ein
10
Current Limit

+5V
100 mV pop
20V min, 40V max
2A min, 10A max
14A max peak

Using the procedure described in Section IV, the following parameters were established:
f
toff
L
C
ESR of capacitor
Ait

C2

R2
R1

+ R2

R1 R2
R1 + R2

Vref
Eo
Rin =

1.B

=::

2

x C2

the nominal switching frequency.

R4 is calculated from the threshold voltage of the
LM305 drive current limiting circuit and the required
base drive current.
R4 =

V threshold
I drive

0.3V
0.03A

=

10"

..

Current sampling resistor RI is determined by the desired short circuit current limit and the VBE of 01. As
described in Section III, under current overload conditions, current i l ranges between two values. The
maximum instantaneous overload current is defined
by: i l x RI = VBE + VRl' The minimum instantaneous
overload current is defined by: i, x RI = VB,.
Since Ait has been previously defined as 4A pop, if
we assume a minimum value of 1OA for it under overload conditions, then the maximum peak overload
value for i l will be 14A, and the average value of
i 1 = 10 under overload conditions is 12A.
R =
I

VBE
i l (min overload)

=

0.6V
10A

=

0.060

5

Power dissipation in RI will be 6W under full load conditions, and B.64W under overload conditions.

2.4K

R3 determines Ail under overload conditions as well
as for normal operation of the switching regulator:

The resulting values are R1 = 6.BK, R2 = 3.BK.
R2 may be trimmed for precise setting of Eo.
C1 and C2 function to provide negative and positive
AC feedback, and should be large enough to result in
small losses to the AC signals. Assuming that Rin =
(R1 x R2)/(R1 + R2), the value of C1 should be
twice the value of C2, so that the negative feedback
will be dominant over positive feedback at all frequencies, thereby ensuring circuit stability. The following
relationships satisfy these conditions:

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=

where:

From the manufacturer's design data for the LM305,
we know that: the internal reference voltage, Vee', is
1.BV, nominal; the impedance of the inverting input is
very high; the threshold level of the drive-currentlimiting circuit is 0.30V; and the impedance of the noninverting input (Rin) is 2.4K, nominal.

First, we may calculate the values R1 and R2 of the
output divider. We will make the effective parallel resistance of R1 and R2 equal to 2.4K, so that the
impedance at the inverting input will be approximately
the same as the noninverting input of the LM305:

C1

These equations are satisfied by C2 = 0.01 /LF and
C1 = 0.02 /LF. Making C1 and C2 too large will have
an adverse effect on transient recovery time of the
switching regulator.

50 kHz (nominal)
17.5/Lsec
22/LH
120 /LF min
0.0250max
4A

From the Unitrode data for the PIC625 Hybrid Power
Switch, the drive current (I drive) required for
10 = 1OA is 30 mAo The VBE of 01 is taken as 0.6V.

~

RI x Ah
R3

RI x Ait =
~

0.06 x 4
0.030

= BO

The value of R5 is determined empirically to optimize
regulation versus changes in Ein. With R5 omitted, Eo
changes approximately 70 mV when Ein is changed
from 20V to 40V. With R5 = 1.2 MH, the change in
Eo is reduced to less than 25 mV.

15-34

APPLICATION NOTE

U-73A

THE IMPORTANCE OF RECTIFIER CHARACTERISTICS IN SWITCHING
POWER SUPPLY DESIGN
With the increasing interest in switching regulated
power supplies designers have directed much of their
effort to selecting transistors with low switching losses
and adequate power handling capability. While recognizing that they must use fast recovery rectifiers, less
attention has been given to "how fast" or "what type of
recovery characteristic" is desired. More detailed
knowledge of rectifier behavior allows determination of
the magnitude of increased losses and stress on the
transistor by the non-ideal diode. By choosing the best
available rectifier, transistor stress can be minimal,
thereby resulting in higher reliability. Other benefits are:
A. Improved power supply efficiency
B. Lower noise
C. Lower cost and/or
D. Smaller size and weight
The performance of fast recitifiers in the most popular
switching circuits is discussed below.
"Switcher" inputs use available DC voltages,
rectifiers directly off the AC line. This DC "input"
converted by semiconductor switches operating
high frequency in circuits such as buck, flyback
boost regulators and in pulse-width-modulated
square wave inverters.

or
is
at
or
or

where T is the period. t is determined by the control
circuit which senses output voltage and controls transistor base drive.

Figure 1a

In this regulator the inductor current is essentially constant as it flows alternately through the transistor or
"catch" diode. The sum of the transistor current and
diode current must always equal the current in the
inductor, which cannot change instantaneously.
At to the diode is conducting inductor current while the
transistor is blocking the input voltage.

--~

Inverter output rectifiers and regulator "catch" diodes
are subjectto unusual stresses due to the fast switching
rates and very low impedance seen by the diode during
the reverse transient (diode turn-off) and a momentary
high impedance during diode turn-on.

--0

vT

These new square wave switching supplies are limited
in efficiency and frequency by transistor stress and
switching losses, some of which is due to diode switching characteristics. Faster transistors and diodes are
helping to increase efficiency and/or frequency. At low
output voltages, and lower frequency the DC characteristics (VCE(sa') and V F) have the major influence on
efficiency. However, as frequency and/or input voltage
increase the switching characteristics become increasingly important.
BUCK REGULATOR ANALYSIS
Ideal Diode - For better understanding consider the
buck regulator and resulting waveforms, using an ideal
diode and assuming linear current rise and fall in the
power transistor during switching. Similar considerations apply to other types of switching regulator
circuits.

The transistor "on" time, t controls the conversion such
that,
(1)Vo ="!'V;

[X~

,....

vo

-0

1\
1\

-"/

/
/

Figure 1b

t, to t2 is the current rise time tr; of the transistor. Since
inductor current is not changing, the diode current must
decrease. The forward biased diode maintains full
input voltage across the transistor.
At t2 the transistor is conducting all the inductor current
so the diode turns off and voltage across the transistor

T

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15-35

PRINTED IN U.S A.

U-73A

APPLICATION NOTE
starts to decrease toward VCE

(sal)'

t2 to t3 is the voltage rise time, tN of the transistor.
From t3 to 4 the transistor is saturated and conducting
the inductor current iL .

ti
la'

At 4 the transistor starts to turn off and VCE increases.

io =-J,.:--A~=::::::=-\-'4-=::::::=-k-

t. to ts is the voltage fall time tfv of the transistor. During
this time the transistor must conduct the entire inductor
current because the diode is still reverse biased. At ts
the diode is forward biased and the transistor is blocking the full input voltage. Diode current starts to increase and the transistor current decreases, the sum
equalling iL .

iT - 0 -I''---''k-I--.f------1L--t---+

vT---!-+-H----JP--+----+vo-o-=l==~R'==~~=F==*

ts to ts is the current fall time tli of the transistor. Diode
current increases in a complementary manner. From ts
to t1 the transistor is off and the diode is conducting all
the inductor current.
To simplify the illustration assume the inductor current
constant and equal to 10 , Transistor dissipation PT is the
sum of transient switching and DC losses. Neglecting
losses due to DC leakages, which are generally negligible:
(2) PT = Vi

10

2

(3) PT =

(tri + tN + tfV + tfi ) + V CE (sal)
T

10

(4 -t3)

T

Figure 1c

TRANSISTOR TURN-ON BEHAVIOR

T10 {Vi
'2 (tri + tN + tfv + 4i)+V CE{Sal) (t4 -t3) }

Practical diode - Now consider how the non-ideal
diode with reverse recovery, junction capacitance, forward recovery and DC loss affects the circuit of Figure
1a.

The transistor "turn-on transient", when the diode is
switching from forward conduction to reverse blocking,
results in the following transistor and diode waveforms:

In Figure 1c the solid lines are the waveforms using a
practical diode in a buck regulator circuit. Comparing
them with the dotted lines of the ideal diode previously
considered we see three significant differences during
transient switching and one during DC conduction:

- 0 -....:.!--¥~+~~r==t=_=- SWITCHING
TRANSISTOR

1. The peak collector current increases (above 10 ) during a period of high dissipation t2 to t2 .
2. Rise times tri and tN are increased. (t2' - t1) > (t2 - t1)
and (t3' - t2') > (t3 - t2)'
3. Maximum collector voltage peaks up above Vi briefly
att s.
4. The diode has DC loss (from ts to t 1) and switching
loss (principally from t 2' to t 3').

CATCH
DIODE

From the PT curve of Figure 1c it is obvious that transistor power dissipation increases above that of (3) due
to the "real" diode, - see the hatched regions.
The magnitude of these detrimental factors depends on
the choice of rectifier. Before considering losses more
fully let us examine the switching periods in greater
detail.

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Figure 2

Dashed lines show what the current and power would
be if the diode were ideal to the extent of having no
reverse recovery time or junction capacitance. (Dotted

15-36

PRINTED IN U.S.A.

U·73A

APPLICATION NOTE
lines show the voltage for the ideal diode case.) The
reverse diode current caused by diode capacitance
and recovered charge is shown by the cross hatched
area of the io curve. The transistor must conduct this
reverse diode current as well as the inductor current.
The grey area represents additional transistor dissipation due solely to the diode recovered charge and
capacitance.
Faster switching transistors will not necessarily result in
reduced switching losses. Unless a diode with recovery time 2 or 3 times faster than the transistor current
rise time is used, a faster transistor will increase the
peak recovery current in the diode and thus increase
overall switching losses. Furthermore, a diode with a
"soft" recovery characteristic will cause more dissipation than an "abrupt" type with the same peak recovery
current. The relationship of recovery characteristic to
switching rate is discussed in Appendix B. With many
switching transistors now available a 200 nS fastrecovery rectifier will have a peak recovery current
IRM(REc) greater than shown in the io waveform of Figure 2, where it is about V3 of the forward current. This
rather modest additional collector current (of 33%
above that limited by an ideal diode) can cause increased transistor power dissipation of 100 to 150%
during the tum-on period. Other serious problems can
occur from high peak currents, such as noise transients
in the line, the transistor coming-out of saturation and
forward-biased second breakdown.
Rectifiers are now available with recovery characteristics to keep these problems minimal. Their use is required for a switching supply of maximum reliability and
efficiency.

TRANSISTOR TURN·OFF BEHAVIOR:
When the transistor turns off, the diode turn-on characteristic usually has little effect on power dissipation but
may cause voltage spiking, with resulting noise and the

iT

1'-../

/"-.

io

-0

....

,'

/

-0

- '!:./

Vo

7

/',

/

Figure 3

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possibility of exceeding the transistor voltage ratings.
Diode characteristics and conditions under which
these transients occur are discussed in Appendix C.
The voltage spike is due to the forward recovery
characteristic and, when present, will occur as shown
(dotted) in Figure 3. To correct it a snubber (series RC
across the diode) may be needed. However, the choice
of an optimum diode will minimize or eliminate this
need.

POWER LOSSES IN THE
SEMICONDUCTOR DEVICES
DC Losses in the buck regulator occur alternately
when the diode is forward conducting and when the
transistor is turned on. Referring to Figure 1 these intervals are ts to t, and t3 to t. respectively. During either
interval the dissipation is independent of input voltage,
V;, or output voltage, Vo, depending only on load current
and device voltage drop. Total circuit DC losses are a
function of VoN; because a) this ratio relates to "on"
time and b) transistor VCE(.al) will probably not equal
diode VF • Neglecting switching intervals the dissipation
due to DC losses is:

V;-Vo

(4) Poc = VF 10 -V-;-

Vo

+ VCE (.al) 10 V;

Loss of efficiency due to DC losses is greatest when Vo
is low, with diode loss being more significant when VI is
relatively high and transistor loss dominating when Vi is
close to Vo.
Transient (switching) losses in the regulator vary
considerably with voltage, being highest at "high line"
V; (see Eq. 3). Furthermore, high voltage transistors and
rectifiers generally have longer switching times than
low voltage types. Speed and "recovery characteristic"
(see Appendix B), and consequently losses, can vary
greatly between different device types and manufacturing processes. A relationship for calculating approximate transient dissipation of practical devices during
the transistor turn-on interval is given in Appendix B.
The other component (turn-off interval) can be similarly
developed but it is not significantly affected by diode
selection. However, when transistors and/or drive
techniques are chosen for shorter fall times overall losses are reduced and the benefits of optimum diode
selection become more Significant. Proper diode (and
transistor) selection is important in all switching
supplies, but the higher the voltage (and frequency) the
more significant will be the effect of selection on switching losses.

OTHER SWITCHING CIRCUITS
The pulse-width-modulated inverter (PWM) supply
(Figure 4a) has much in common with the buck regulator. Output rectifiers also perform the catch diode
function. Current waveforms are shown in Figure 4b,

15-37

PRINTED IN U.S A.

APPLICATION NOTE

U-73A

with overshoot due to diode reverse recovery and capacitance. Here again slow diodes cause additional
transistor stress, usually not reduced significantly by
transformer impedance. Leakage reactance will often
require the use of a snubber, to protect the transistor.
Transistor "on" time t and the turns-ratio control the
conversion such that

Np

D,

N,

EE
-

+

T,

The square wave inverter can be conSidered, in terms
of device operation, a special case of the PWM where 2t
approaches T. Regulation is achieved by varying Vi'

EMI, RFI, NOISEGiven any inductance in a circuit "loop" of wiring, a
rapid current change will generate a voltage transient,
V = L dildt, and the energy in such a transient will vary
with the square of the current, E = V2L12. The interference and voltage spiking 'will be easier to filter if the
energy is low and has predominantly high frequency
components.

(5) V = 2t N, V.
o
T No
I

T,

because they (0, and/or O2) are conducting the full
cycle regardless of Vi to Vo ratio. Another difference is
that here the diode recovery is from half, rather than full,
load current.

We can establish a priority of factors for reducing EMI:
1. IRM(REc) should be as low as possible, - accomplish
by diode selection (see Appendix B and Fig. 7).
2. L (circuit loop) should be minimum, - accomplish by
layout and interconnect geometry. (See Fig. 5).
3. Use a "soft recovery" diode (See Appendix B). However, this is an item of possible trade-off since such a
device may have longer tm higher IRM(REc) and, thus,
create much higher switching loss.

D,

Figure4a

\

An ultra-fast device with moderate recovery (vs. abrupt
or soft) will often be the best choice.

~iT1-0

REDUCE EMI BY LOWERING CIRCUIT WIRING INDUCTANCE:

II

-h 2 - o
IA.
- i 01

-O

r--

1'"--

Low L needed In loop shown In grey AVOid ground loop nOise by returmng Input capacitor
directly to diode

- i 02 - O

-

~

I---

IY
\

\
T

\,

\,

\,

Figure 5b

\,

Figure4b

From t, to t2 transistor T, and diode 0, conduct, with
diode current equal to inductor current iL.
At t2 the transistor turns off and the inductor "pulls" iL
equally through 0, and O2,
At t3 transistor T2 turns on, driving full iL through O2 and
causing 0, to be reversed biased. O2 current is increased by the recovery current of 0" and T2 current
also increases proportionally.
From t. to t, both transistors are again off and at t, the
events of t3 occur on the opposite device pair.
One difference between the inverter and the regulator
is that here the DC diode losses are more significant

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SELECTING THE BEST SWITCHING RECTIFIER
Ratings and characteristics have different priorities and
significance when they are to be applied to these power
switching circuits. Selection should be based on the
following:

1. Peak inverse voltage, PIV of "catch" diodes must at
least equal the highest input voltage, while PIV of
center-tap output rectifiers must be at least twice the
maximum output voltage in a square wave inverter and
much greater in the pulse width modulated inverter.
More significant perhaps are the transient voltages in
practical fast switching circuits partly due to wiring
inductance and rectifier's own recovery. Unless these
are intentionally clipped, damped, or "designed out" it
is advisable to use a safety factor of 2 or 3. PIV selected

15-38

PRINTED IN U.S.A.

APPLICATION NOTE

U-73A

should apply over a range from lowest ambient to the
highest expected junction temperature.

Unitrode UES series is closest to the Schottky, especially at expected operating conditions.

2. Reverse recovery time trr must be much lower than
the rise time of the transistor with which it will be used,
- preferably by at least 3 times when measured at
conditions similar to circuit operation. Selection is
complicated because rectifiers are normally specified
at conditions less severe than in power switching circuits. Furthermore, correlation between test conditions
is not always the same (see Table I of Appendix B).

4. Maximum average rectIfied output current at

Following preliminary selection from available data the
devices should be compared in a circuit developing the
highest current, junction temperature and rate of current switching (- di/dt) expected.
The desired goal is to minimize peak recovery current
IRM(REc) and switching loss. Note that these are the same
order of magnitude with Schottky rectifiers (due to high
capacitance, principally) as with the fastest PN
rectifiers. The figures below illustrate these points. Figure 6 shows the variation of peak current with switching
rate, using the Unitrode UES 801 in a special test circuit. Figure 7 shows the difference in IRM(REc) and trr
when representative fast recovery 00-5 devices are
measured in a JEOEC test circuit at different temperatures. In Figure 8 the incremental collector current (the
peak value in excess of 30 A) for a 30 A buck regulator
using 50, 100, and 200 nS catch diodes is plotted as a
function of transistor rise time (and resulting di/dt). Figures ga, b, and c show the loss of efficiency due to
transistor turn-on dissipation as a function of operating
frequency, with 3 transistor rise times and 3 diode recoverytimes, in a regulator operated with 40 Vin and 10
V out. Similar figures can be developed for other conditons using the model and assumptions in Appendix B.

3. Forward voltage should be as low as possible to
optimize efficiency, especially for inverter output
rectifiers and regulators with high V;/V o ratios. Loss of
efficiency due to VF is most significant at low output
Voltages. Fig!-lre 10, which relates this loss to device
choice over the range of available forward voltages,
applies to output rectifiers of inverter supplies with
popular output Voltages.

maximum expected case or ambient temperature must
always be considered. Note however, that standard
current rating is based on a half sine waveform. These
square wave applications at average current equal to
this rating will usually dissipate somewhat lower power,
and, thus, be used conservatively. However, regulators
with Vi :S 1.5 Vo should use a catch diode with a higher
rating than the average current it conducts at full load.

5. Peak voltage

VF(OYN) during forward recovery will
be of significance when using transistors with fast fall
times at close to the VCE rating. This is further discussed
in Appendix C. See Table II for typical performance of
representative devices. At lower values of di/dt the
peak voltages will be lower.

6. Surge current (8.3 mS) is not of great significance
because transistor saturation limits fault current. If the
power supply is designed to provide rapid charging of
a large output capacitor the "overload" requirement for
the charge time (perhaps 0.1 to 2 seconds or so) must
be considered.
IRM (REC)
CONDITIONS

IFM

10A, UNEAR SLOPE

=

----

~ '\ l\

I ·0
I,

l~

l~
-----

~

----

di
dt

vs

UNITRODE UES 801 RECTIFIER

----- ----- ---- ----

"-&

-----

& trr

~

A

.....

~~ ~~.::,:

----

---- -----

0-

~

----- ----- ---- ----

Figure 6

IRM(REC)

CONDITIONS.

IFM

&trr of 005 FAST RECTIFIERS

= 3DA

• (30V

JEDEC)

Schottky rectifiers have the lowest VF and are therefore
widely used as output rectifiers for 5 V supplies. Their
limitations in PIV, transient voltage capability and temperature must be considered when applying them in
other applications.
Selection should be based on conditions where losses
are most significant, - at rated supply output current
and anticipated junction temperature. The approximate
range of VF , at rated current and 25°C, as well as at
more typical operating conditions, is shown in Figure 11
for representative fast rectifier types. Note that the

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Figure7a

15-39

PRINTED IN U.S.A.

APPLICATION NOTE

U-73A
125C

2

3

*)

INCREMENTAL COLLECTOR CURRENT (AT TURN·ON)
.lIe

VS

1..

(and

Conditions:
30A buck regulator.

-- - --

Lmsardlldt.

50

trr=2~

-- -'-

"""

V

1,,~100_

Figure7b

...

......
25°C
(A)

125°C
(A)

25°C
(nS)

125°C
(nS)

1
2
3
4

0.6
1.0

1.3
1.0

50
86

72
95

50

1.7
2.9

3.7
5.4

86
142

185
296

100
200

1
2
3
4

Unitrode UES 803
Schottky rectifier.
100nS rectifier.
200nS rectifier.

- - ===--

20

1--

5On~

.,"

I"
MAX.
AlLow
Currenl
Cond'ns.

I"

IRMIREC)

DEVICE
TYPE

40
30

I"

...-

50

~

-

100

300

200

400

500

75

60

d,/dl (Np.S)
300

150

100
I" (nS)

Figure 8

Figure7c

LOSS OF EFFICIENCY DUE TO TRANSISTOR TURN·ON LOSS*- BUCK REGULATOR
20

30

40

20
I"

50

80

20

30

40

50

~ 300 ns'

I"

~ 150 nSI

.......
.......

-

-: ..

.
"""
..........: ,

..,-

....--

~,

.......

......-::;-"
",'

........

1.0

-

.......

V

,

.

..'

....-

,I--"

-- =

..........

20

30

40
50
FREQUENCY (kHZ)

80

20

40
50
FREQUENCY (KHZ)

~

60 'nS

-

-

..... ......

100 nS diode

- - - - ~50nSd,od.(UES803)
- - - - - ~ IDEAL DIODE

0.2

50

80

100

....1--- '

20

....

....

_.""

....

""" .. """..... ~

"" 200 nS diode
-

40

..... 1-

.......

""...".",.,
0.5

t"

,.-

....
./

30

-

........

10

20

80

I

... ...-

......

"'~.

..
...... .
~

40
50
FREQUENCY (KHZ)

100

• Calculations of total sWitching losses (diode and transistor) per model In
Appendix B for a 30A buck regulator with V In = 40V and VOUT = 1OV.

Figure 9
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TWX (710) 326-6509 • TELEX 95-1064

15-40

PRINTED IN U.S.A.

U-73A

APPLICATION NOTE

20

~

15

V

10

1/

...... ~

......

,/

5V:= Vo

i,...o

i--'" ......

10V

~

12V

[..,..0'

./

~

i--'"

......

LOSS OF EFFICIENCY
DUETO FORWARD VOLTAGE
OF INVERTER OUTPUT
RECTIFIERS.

24V- I--

~

..... ~ -'" ~

V
./

V 1/V

....J..... I-

V
V
.6

0.4

I-- I--

20V

V

./
./

I-- I--

~

l,...oo 1/

V

V
.8

~

48V

~

V

1.0

1.2

1.4

1.8

1.6

V,(V)

Figure 10

VI available (approximate range) for low to medium VRM applications
VI in volts: .35

.45

.55

.75

.65
I,

2Ot040

{

12

20

1.35

1.55

1.75

150 1
13

11

1.15

I

Max VI (spec'd @ rated
IF and TJ=25C.)

Typical VI @V2 Max
current @ max TJ.

.95

I

"'12=--__1.:...,50""1

150

14

,......-_ _--,
100.1501

13

400

1

KEY~
1 ~ Schottky.
2 ~ Unitrode UES 150 V senes

3 == Other deVices for low forward voltage
4 ~ TYPical fast recovery (200 nS) deVices

N ""' DeVice Class
XY=V AW
(Max at TJ noted above)

S = Fast deVices to 800 V

Figure 11

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15-41

PRINTED IN U.S.A.

APPLICATION NOTE

U-73A

Appendix A

"Off-Line" Supplies
BASIC CIRCUIT

TYPE

FEATURES

a) Buck
Regulator

Vo < V ln ·
Output non-isolated.
Easy to filter output. Noisy input.

w

~

::J

g

FigureA-2

b) Flyback
Regulator

6
c

a:

w

~

~

w
z

Vo opposite polarity
from V in . (Unless
isolated).
Output can be isolated. Output can
be stepped up to HV.
Noisy input and output.

::l

Ii:c
ci

w

u:

FlgureA-3

~a:

c) Boost
Regulator

::0

Vo > V ln ·
Output non-isolated.
Hard to filter output. Quiet input.

o

ff'

d) PWM
(Variable
Duty Cycle)
Inverter.
FlgureA-4

e) Square Wave
Inverter (50%
Duty)
FlgureA-5

= Bridge. center-tap.
or half-bndge inverter.

('J INV.

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LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

15-42

Used with single
Vo' - also common
for lab supplies.
Provides isolation.
Does not
need separate catch
diode, - rectifiers
serve this function,
possibly with small
HV diodes in primary for
magnetizing current.
Regulation provided
by previous input.
Regulates one of
(possible) multiple
outputs. Uses high
transistor count.
Provides isolation.
Does not
need separate catch
diode, - rectifiers
serve this function,
possibly with small
HV diodes in primary for
magnetizing current.

PRINTED IN U.S.A.

U-73A

APPLICATION NOTE

Appendix B
Reverse Recovery Behavior and Dissipation
1. Waveforms and definition of terms:

TOTAL AREA OF REVERSE CURRENT =

ORIREel

This area shown
enlarged at
~--- right
High d~

IRMI

slope =.=QL
dt

JEDEC test - standard slope

dt
=

Figure B-1

25AI p,S

"ABRUPT"

"SOFT'

Figure B-2

Figure B-3

2. Discussion of Variables:
Any PN junction diode operating in the forward direction contains stored charge in the form of excess minority carriers. The amount of stored charge is proportional
to the forward current level.
The diode or rectifier in a switching regulator is
switched from forward conduction to reverse at a specific ramp rate (-dl/dt) determined by the external
circuit, usually by the turn-on time of the associated
switching transistor. During the first portion of the reverse recovery period, ta, charge stored in the diode is
able to provide more current than the circuit demands,
so that the device appears to be a short circuit. Transition from ta to tb occur~ when stored charge has been
depleted to the point where it can no longer supply the
increasing current demanded by the circuit. The device
becomes a high impedance and during tb the reverse
voltage is permitted to increase. Reverse current, no
longer circuit determined, dwindles as excess stored
charge depletes to zero. Stored charge is depleted by
the reverse current flow and also by recombination
within the device.
At (-dl/dt) rates which are slow relative to the rate of
recombination of the specific device relatively little
stored charge is swept out. Recovery time, trr is determined mainly by the recombination rate, independent
of (-dl/dt). Peak reverse recovery current IRM(REC)' and
total charge associated with reverse current, OR(REC)
are almost directly proportional to (-dl/dt) (Region I,
Figure B-4). The recovery characteristic with slow
(-dl/dt) rates tends to be soft.
When the (-dl/dt) rate is fast compared to recombination rate (transistor turn-on faster than diode recovery
time), trrdecreases as -dl/dtincreases, because more
of the available stored charge is swept out sooner,

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leaving little to be depleted by recombination. As
(-dl/dt) increases, peak recovery current increases
and can become much greater than the original forward current level. However, OR(REC) levels off as (-dll
dt) increases because it can only approach but not
exceed the total stored charge which is a function of the
original forward current level (Region II, Figure B-4).
Higher voltage devices have poorer recovery characteristics because they require thicker regions of higher
resistivity, resulting in greater volume of stored charge
and longer recombination rates.
RECOVERY CHARACTERISTICS

II
dl/dt

FlgureB-4

With a given IF and dl/dt the OR(REC), IRM(REC), and trr all
increase with temperature. Recovery characteristic
changes as well (generally becoming more abrupt if
reverse current is not circuit limited, and softer if limited). Furthermore, OR(REC) increases and recovery
generally softens if higher circuit voltage is applied to a
given diode.

15-43

PRINTED IN U.S A.

APPLICATION NOTE

U-73A

3. Comparison of devices at popular test conditions:
Table I, below, shows measured trr values (in nanoseconds) using ultra-fast and fast recovery 00-5 rectifiers.
I,

I.
(A)

(A)

0.5
1.0
1.0

1.0
1.0
1.0

30
30
30
30

-

-di/dt

T

(AlILS)

(OC)

step
step
step

UNITRODE
UES803

IR(AEC)

(I" Measured 10 (A»

25
25
125

(85V JEDEC circuit)
30
25
30
125
100
25
100
125

MANUFACTURER

B

C

0

42
50
122

-

-

63
135

120
300

105
210
92
160

150
300

0.25
0.10
0.10

38
45
60

50
75
90

0
0
0
0

75
100
45
65
50

120
150

MAX t" per manufacturer's stated condition

85
140
72
66
114
106
50 to 100

E

-

200

Table I
4. Turn-on switching losses, assuming linear V and I
transitions:

(S3) Pita I =V ln (Ic

With an ideal diode, switching losses are entirely in the
transistor as follows (from Eq. 2).

(S4)

(S1)P(trll =Vln

a

rl

(IRMIRECI)
Ie

(S5) P = V. ( I + I RMIRECI) (
(tal
,n
e
2

Ic trl

'2'-:;:

Vln
trY
(S2) P(t"l = 2 ' Ic' -:;:

(S6) Pltal =Vln ,lRMIREcl ( I

A practical diode with finite trr and IRM(RECI will cause
additional switching losses as follows:

+

!!!T

IRMIRECI )
Ie

I RMIRECI) trl

~

-:;:

If diode IRMIREcl is half of Ic (1.5:1 current overshoot in
transistor) total transistor switching losses during current turn-on (trl + tal will be 2.25 times greater than with
an ideal diode (Eq. S1).
During diode recovery time component tb, the diode
continues to conduct reverse current, but becomes a
high impedance, permitting the transistor voltage transition, trY' to take place. Diode reverse current during tb
causes increased switching losses in the transistor
and/or the diode. It is difficult to quantify these losses in
the diode and transistor separately, since transistor V CE
is decreasing and diode VR is increasing during all or
part of period tb' However, the total increase in losses in
both diode and transistor during tb is:

I,
TRANSISTOR
i,

v. = V'N

( S7) PI I =V. ,lRMIREcl • ~
tb
In
2
T
(area S = IRMIREcl. t b)

1,=1,
DIODE

2

v.
FlgureB-5

Diode recovery time component ta effectively increases
transistor rise time, and delays the voltage transition, trY'
During time ta, the diode conducts reverse current but
remains a low impedance. Transistor VCE remains equal
to Vln while collector current continues to rise above Ic
to Ic + IRM(REcl' The entire amount of charge shown in
shaded area A results in increased switching loss in the
transistoron/y (increase in diode loss is negligible):

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t = t

+ IRM~RECI) ~

Note: Pltbl loss is in addition to the ideal diode case
transistor losses, Pltryl (Eq. S2). With a very fast diode, tb
will be much shorter than trY' and most of the P(tbl loss
will occur in the transistor, although it will be negligible.
With a slow diode, where tb is much longer than trY' Ptbl
loss will be significant and will occur mostly in the
diode.
P(ta l is usually much greater than P(tb l ' Since all of P(tal is
dissipated in the transistor, it can be seen that most of
the increased switching losses caused by diode reverse recovery are borne by the switching transistor,
not by the rectifier.

15-44

PRINTED IN U.S.A.

APPLICATION NOTE

U-73A

AppendixC
Forward Recovery Behavior and Characterization
When used in some circuits, any diode may exhibit the
phenomenon known as forward recovery. Under these
conditions, the device has an impedance which, for a
short time after initial application of forward current, is
higher than its normal "on" value. The magnitude and
duration of this transient impedance will depend on
circuit conditions and device design, varying from no
effect in many circuits to a few microseconds in the
worst case. When present, the effect is generally less
with fast-recovery rectifiers, and much less with
"computer-type" switching diodes.
Circuits with very fast current rise time, in the direction
of forward conduction, will allow this phenomenon to
appear. Generally, these will be low-inductance circuits which allow the current to rise from zero to rated
forward current in less than the reverse recovery time
for fast stud-mounted rectifiers, and in less than 0.1 x trr
for lead mounted fast devices.
When such a source has a high voltage, of at least 10
times VF, the forward recovery phenomenon exhibits an
initial higher-than-steady-state forward voltage. The
rise time of current is not limited by the diode and the

peak voltage decays to the specified measurement
level in the "forward recovery time" tfr . The peak voltage
VF(OYN) will be strongly influenced by the current rise
time di/dt, and current IF'
When a fast-rise source has an open circuit (compliance) voltage of less than several times the diode VF,
the forward recovery phenomenon may exhibit a delay
in the rise of forward current. In this case the peak diode
voltage is limited by the source, and the "turn-on" time
is the rise time to 90% of IF'
A comparison of the Unitrode UES 803 with a typical
200 nS rectifier is shown in Table II below.
005

Unitrode
UES803

IF to1AlnBnS
IF to 1A In 125nS and
continuing to
50Awlth
t, = 10JLS

VF(OYN)

t"

(v)

(nS)

20

12

300

-

2.B

350

(v)

t"
(nS)

1.2

09

VF(OYN}

Test Condition

200nS

TabJeJl

III

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LEXINGTON, MA 02173 • TEL. (617) 861-6540
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15-45

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U-76

APPLICATION NOTE

FLYBACK AND BOOST SWITCHING REGULATOR DESIGN GUIDE

Section One - Flyback Regulator
I. Definition
A. Continuous Mode

The flyback switching regulator described in this
application note accepts a DC voltage input and provides a regulated output voltage of opposite polarity.
This method of conversion, compared to a conventional DC to DC converter, provides advantages of
high efficiency, low cost, circuit simplicity, and a
rather wide, easily selectable choice of the regulated
output voltage. The switching transistor is not stressed
to second breakdown in either the forward or reverse
bias modes. Thus, it provides a reliable method of
converting the input voltage. The disadvantage of the
flyback switching regulator described here is that it
provides no isolation and requires a large output
filter capacitor. Primary usage of this type of regulator is in low current and/or high voltage applications.

In this mode of operation, a large inductor is required to insure that the inductor current never goes
to zero. Although the current through the inductor
flows continuously, the charging current to the filter
capacitor is in the form of discontinuous current
pulses. This large peak-to-peak current waveform
requires a much larger filter capacitor than the buck
regulator. Component cost is higher than with the
discontinuous mode of operation because of the
large inductance required, and transient response
is worse.

II. Design Approaches to
Flyback Regulator

B. Discontinuous Mode

The output voltage can be regulated by varying the
duty cycle of the transistor switch.

Continuous Mode

Discontinuous Mode
Output current = I" m~x

Transistor
current iT

h'
-=

-

10

I

Output current ~ 10 ma~

T:I
~
+- _--L 1..:.--0
Air

I

D

_-_

(see Figure 1b, 1c)

In this mode, the regulator is designed such that at
maximum output load current and minimum input
voltage, the transistor starts conducting as soon as
the catch diode stops conducting. At a lower output
current or higher input voltage there is a dead time
when neither device conducts.

The principal difference between a flyback regulator
and a buck regulator (Ref. Unitrode Design Guide
U-68) is the manner in which energy is transferred
to the output capacitor. In a buck regulator, energy
is provided continuously, while in a flyback regulator,
energy is pumped in a discontinuous fashion. The
flyback regulator can be operated in two modes.

Diode current
(capacitor charging
current & load current)

(see Figure 1a)

_

ID:
~

-

lom .. -

-.- . . -

I

.

~

- - - t --=. :.::.J-:::.·~O
I

~I

Inductor current

------Figure 1a

Figure1b

Figure 1.

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~--c-~i-~o
Figure1e

Current Waveforms

15-46

PRINTED IN U.S.A.

APPLICATION NOTE

U-76

III. The Flyback Switching
Regulator Described and
Characterized

0,

+

I..

+ o--E"_ - - * - _ - * - - 0 ' ]

The basic circuit configuration and generalized current waveforms are shown in Figure 2. When transistor 0, is turned on, the supply voltage, E'N, is applied
across power inductor L. The current through the
inductor rises linearly to a peak current level Ip:
I = E'N X lr

D,

Figure 2a.

Flyback Switching Regulator

A.

PL'

This results in an energy transfer from the input
supply to the power inductor:
W=.lLl'
2 p

B.
,

I = Eo
p

PO"'

=

Eo

x

10

1

=2

Lip

,

x

f

.. 0.

The voltage induced in the inductor is such that Eo
is opposite in polarity from E,N . The relationship between Eo and E'N is established by combining equations A and C, eliminating Ip' and L:

E.
DC output current 10 is equal to the average current
through the diode:
I

o

=lX~=~XtoXf
2
T
2

The output voltage can be regulated by operating at
a fixed frequency and varying the transistor on time,
t,. However, because of the inherent "pumping" action of the flyback regulator, the output voltage
diminishes while the switching transistor is on, and

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I..

C.

The power delivered to the load is equal to the peak
energy stored in the inductor times the number of
pump cycles per second:

--0

I,

0

~i
Figure 2b_

X to

L

I

I

When the transistor turns off, a voltage is induced
across inductor L which forces the current to flow
through diode 0,. All of the energy stored in the
inductor is transferred to the output capacitor and
load RL , and the inductor current diminishes linearly
from Ip to zero according to the relationship:

t'-1

f--tD--i
1
'=j

~l

Generalized Current Waveforms of a Flyback
Switching Regulator

increases when the transistor is off. This characteristic makes it difficult to control on a fixed frequency
basis.
The simplest approach to controlling the flyback
regulator in the discontinuous mode is to establish
a fixed peak current through the inductor, which
determines a fixed diode conduction time, to. Frequency then varies directly with output current, and
transistor on-time varies inversely with input voltage.
This is the approach used in this application note,
resulting in a simple and economical control circuit.

IV. Worst Case Design
Conditions
Design equations based on the fixed peak current
mode of operation are shown in Figure 3. The worst
case condition exists when input voltage is low while
output current is at maximum. Under these worst
case conditions, frequency is maximum and t, is zero
because the pass transistor turns on as soon as
diode stops conducting.

15-47

PRINTED IN

u.s

A.

•

U-76

APPLICATION NOTE

-

-

'd

10

GIVEN:
ErN (mini

Eo

1

10

c

1"

n

WORST CASE:
E'N = E'N Imi'l

rE'N

I

=

10 10 (max)
t,=O

U-O

o---------~----~~---------4-----'O

I.

.1,

,

I

r-

t1

- j - - tD ---"+- t, -.l

I

I

I,

I

I

(max)

f max
Ile o

I

I

I

'

Ip

I

=2 10 m" (Eo/E'N Imi,) + 1) =constant

T

a
L _ tD X Eo _ tT X E'N

- -I-p -

--Ip -

-

0-~-4-

1

10

f=-=fm"-I-0 (max)

T

C _

V
L

min

a

I

v

I

I Eo

I
I

I

I

I

I

ESRm"

C~_I
__ ~
-----t-_: --E
I
- T- -

V
ESR

II

- - - -: - - - ,--

•

I
I

p

0

I ,

I

I

>---r--

ole,

- - - -- - ] - -

-1 _ _

= Illeo

I:

--r----0--1-"----'
e

o

(worst case 10 ---'> 0 )

I

I
I

= Ip2.le
X tD

I
--1-E

_ __ ~ ___ 1_

0_

Figure 3.

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LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Flyback Regulator

15-48

PRINTED IN U.S.A.

APPLICATION NOTE

U-76

V. Circuit Design and
Description
In designing a flyback switching regulator power
supply, the following parameters will normally be
predefined. Numerical values are given and computed for the example shown in Figure 4.
Eo
.:leo
lomax
EINmin
EINmax

5V output
100 mV output ripple voltage peak to peak
2.5A
9V (minimum)
15V (maximum)

Since the output voltage is derived from pulses of

current, it is desirable to keep the operating frequency as high as possible in order to obtain small
size and lower cost of the filter inductor and capacitor. However, above 5-10 kHz, capacitor impedance
is usually dominated by its equivalent series resistance, ESR, rather than C value. Since the ESR
remains essentially constant regardless of operating
frequency, operation at higher frequencies does not
enable the size and cost of the capacitor to be
further reduced.
Also, at higher frequencies, transistor switching
losses become significant. Thus, a maximum operating frequency of 25 kHz is chosen for this design.

R,
016n

+ E'N O----.---P--'WIl"-1~_O_....- - ,
+ l2V
C'N,

----o -

~-+1IK1-o+-E-'W_~~_......

Eoo.

-sv

500~T

Co

= lOOOI'!

L=1651'H

E'N

= + l2V

Eou' == -

± 25%

5V

10= 2.SA
Load & Line Regulation
Efficiency = 70%

= .2%

Ishortcm:u,t=3.0A

INHIBIT
CONTROL

INPUT

III
Figure 4.

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LEXINGTON, MA 02173 • TEL. (617) 861·6540
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Flyback Regulator, +12V Input, -5V Output

15-49

PRINTED IN U.S.A.

U-76

APPLICATION NOTE
Referring to Figure 3, the design calculations are:
Ip

2 lomax (Eo/E'Nmin

+ 1) =

2 x 2.5 (5/9

+ 1)

7.8A (constant)
. to

f m.. (Eol E'Nmin

+ 1)

25 x 10 J (5/9

+ 1)

25.7 p's (constant)
L

toXEo
25.7x10-'x5
- Ip- =
7.8
16.47 p.H

The TL497 control circuit operates in the current
limiting mode under normal operating condition.
Thus, the peak current value, Ip, is determined by the
current limiting resistor R5 • Capacitor C, is required
to prevent the TL497 from terminating the transistor
on-time prematurely. This causes an 8 P.s delay,
once over -current is detected at the short circuit
sense input (pin 13 of TL497) before the transistor
switch turns off. The delay time is the time required
to charge capacitor C, to the predetermined voltage
level before drive current to the pass transistor is
removed. The current limit threshold voltage is about
1.2 volts.

Ip X to _ 7.8 X 25.7 x 10-'
2 ~eo 2 x 0.1
_ 1.2
- 7.8A

1002 p.F
ESR m" =

~~o

=

~:~

=0.153n

= 0.0128 n

The operating frequency will change in proportion
to load current, 10:
0
f = f m.. X _11

o mo!lx

The PIC625 hybrid power output stage incorporates
a fast PNP quasi-darlington switching transistor and
UES catch diode. The quasi-darlington switch requires 30 mA of drive current. This drive current is
provided with diode 0, and Resistor R, in conjunction with the Integrated circuit TL497. (Refer to
Figure 4)
IOR'VE = Vb. = 0.65
R,
R,
:. R, = 22n

The function of transistor 0" diode 0, and resistor
R, and R. is to provide short circuit protection. The
transistor 0, prevents turn-on of the pass transistor
as long as the catch diode continues to conduct.
Thus, it limits the maximum current and operating
frequency under short circuit conditions. 0, and R.
providing voltage isolation to transistor 0,.
C, is required for circuit stabilization; capacitor C,
provides AC coupling of ripple voltage to the control
circuit. C'N and Co are filter capacitors.
Ur,itrode Switching Regulator Design Guide U-68
covers the design of a buck regulator, and contains
a section on power inductor design which is applicable to the flyback and boost regulators.

The output voltage is preset by divider network
R, and R" according to the relationship:
Eo =
where VREF = 1.22V.
for R, = 1K, then:

[1 + =: JV

REF

Assuming a nominal value

R, = 320n
R, may be trimmed to obtain the precise output
voltage.

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APPLICATION NOTE

U-76

Section Two- Boost Switching Regulator
The boost switching regulator is described briefly
in this application note. It accepts a DC voltage input
and provides a regulated output voltage which must
be greater than input voltage.

conduction time is not fixed, but varies according
to the input voltage:

The basic circuit configuration of a boost regulator
is shown in Figure 5. When the transistor switch is
turned on, the supply voltage E'N is applied across
power inductor L. The diode is reverse biased by
voltage Eo. Energy is transferred from the input supply to the power inductor. When the transistor is
turned off, the energy stored in the inductor L induces a voltage such that the diode conducts and
transfers the energy to the load and the output
capacitor. In addition to the energy stored in the
inductor, additional energy is transferred from the
input directly to the output during the diode conduction time.

Output voltage is regulated by controlling the duty
cycle:

This pumping action, similar to the flyback regulator,
also makes it desirable to operate the boost regulator in the discontinuous mode with a fixed peak
current through the inductor. However, unlike the
flyback regulator, in the boost regulator the diode

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tD=~
Eo - E'N

~=~+1
E'N

tD

Since the ripple voltage across the output capacitor
is directly proportional to diode conduction time, tD,
capacitor requirements are determined by the maximumtD:
tD max =

Lip
Eo - E'N (max)

The Figure 6 is a complete schematic diagram of a
boost switching regulator. It accepts +12 V of DC
input voltage and provides regulated +24V of output
voltage.
The design procedure and circuit description is similar to the flyback switching regulator.

15-51

PRINTED IN U.S.A.

U-76

APPLICATION NOTE

+0--------------------,

GIVEN:
EIN (max)

E1N (min)

Eo

10 (max)
tim,,}
tJ.e o

WORST CASE:

LOAD

ErN

=

10 = 10

ErN (mID)
(max)

t,=O
1

:..
:.- tT

T=f

I

I

i

.. ;

~ tD ---'-- t, ---..I
I,

!

i

I

r

T

o
i

tD (mID)

L=

D

=f

1
max

(E
0

IE IN (min) )

tD (mIDI (Eo-ErN mID)

Ip

O-.......--+-

Cmin

o

= Ip X tD

(worst case 10 ~
L..-----'r Eo

Ye

i

;

;

ESR m" =

I

~--~~-Eo
-+~------ ~ ~F

=:- -

,

i

I

V

max

2 tJ.eo

0)

~eo
p

r

I
I

ESR

I

--t---O--!-~

e

--- -- -J •

I

r

I
--i-E

.leo

- - -

~ --

- - 1- -

Figure 5.

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Boost Regulator

15-52

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APPLICATION NOTE

U-76

E'N

E,

N= 14

=

+ 12V

= + 24V

1,=2A

A930·158

r---------..,
497

I

TL

500

pI

220
18K

lN914

lK

+--_----.. . .

+0--.....
= 12V

E'N

1001'1
SOp!

Figure 6.

Boost Switching Regulator

m
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APPLICATION NOTE

U-76

Appendix A- Derivation of Design Equations
The basic circuit configuration of the flyback switching regulator is shown in Figure 3. Assuming a fixed
value of peak current, Ip, and output volts, Eo, the
following equations are evident:

+ to + tx =

T m;,

.

2.

1/f .

Worst case T = T m;" f = fm'" tx
Substituting Equation 1a:

d O m..

= 0, E'N = EIN min.

= f:" = to (Eo/EIN min

t 1
o - fm" (Eo/EIN min

+ 1)

........................................ 4.

=~X~=~XtoXf
2
T
2

..4a.

-2-

-

The ripple voltage,
resistance, ESR.

..... 2b.

+ 1)

Ip X to

-

.. . em;, = 1'2 ~e~ ....................... ....... Ab.

.2a.

UESR

.
••

across the capacitor series

UESR

= Ip X ESR

................. 5.

de
-1-o

.................. Sa.

ESR max

=

p

The frequency, f, will vary as a function of load current. Rearranging Equation 3:

By inspection of Figure 3 output current waveforms:
o

dO

C

Substituting into Equation 4 and rearranging:

Since in Equation 1, Eo, Ip and L are all constant
values for a given application, to is also a constant
value.

I

=

The worst case net charge into the capacitor is equal
to the area under the diode current waveform

.. 1a.

lr=tox Eo/E'N
= tr

dV e

...... 1.

EIN lr = Eo to = Ip X L

T

The ripple voltage, dUe, across the output filter capacitor:

........... 3.

~ = -k-

Taking worst case conditions and substituting Equation 2b:

X to = 10 max/fm..

. ....

6.

0
.............................. 6a.
f = fm" X _11

o max

10 max =

.'.

~

X fm" X f m.. (Eo/EIN max

Ip = 210 max (Eo/EIN max

+1)'

+ 1) .

and

.. 3a.

10 m;,
f min = f max X -1-

.... 3b.

o max

Rearranging Equation 1:
L=toXEo

Ip

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.1 b.

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U-77

APPLICATION NOTE

THERMAL DESIGN CONSIDERATIONS FOR OPERATING UNITRODE'S TO-92
TRANSISTORS AND DARLINGTONS IN PULSED-POWER APPLICATIONS
Introduction

Thermal Analysis

Unitrode's power Darlingtons (U2TA506, U2TA508, U2TA51 0,
U2TA606, U2TA608, U2TA610) and power transistors
(UPTA510, UPTA520, UPTA530 and UPTB520, UPTB530,
UPTB540, UPTB550) in economical TO-92 plastic packages
are ideally suited for use in pulsed power applications, such as
lamp driving or printer driving where the inrush or pulse drive
current can be as high as several amperes. When compared
with transistors or Darlingtons in conventional power packages,
the Unitrode TO-92 devices offer cost savings of 50% or more,
take up significantly less board space, and lend themselves to
tape and reeling and automatic insertion. They also offer the
advantage of a maximum operating junction temperature
(TJlmax) of 175°C versus 150°C or 125°C for other plastic
packaged devices.

A detailed transient thermal analysis is required to determine
the peak junction temperature and maximum allowable
power dissipation since the junctions of the transistor or Darlington are subjected to temperature excursions due to the
applied, periodic power pulses.

Thermal considerations are of prime concern when the TO-92
power transistors and Darlingtons are used in pulsed power
applications. This Design Guide provides a method for determining the junction temperature and maximum allowable peak
power dissipation for the U2TA506, U2TA606 and the UPTA51 0
and UPTB520 series when they are operated at frequencies of
10kHz or less, where the switching losses are negligible and
can be ignored. This method is valid for the vast majority of
pulse applications.

A) Effective Pulsed Thermal Impedance
The effective pulsed thermal impedance (ep) of a device
subjected to a periodic train of power pulses can be
calculated as follows:
ep=(e;'A)(O) + (1-D)(r(t+T))-r(T) + r(t) .
. . (1)

Applied Pulse

I

I

~

I

I:-t

Where:

~I

EqUivalent
Square Pulse

T

I

I

~I

L

= pulse width
= period
D
= th (Duty Cycle)
r(t+T) = transient thermal impedance
attimet + T
r(t)
= transient thermal impedance
attimet
e j • A = DC junction to ambient thermal
impedance
Ppk
= The peak powerofa square power pulse
with equivalent energy to that of the
actual power pulse.

T

Figure 1. Power Pulses
The DC junction to ,ambient thermal impedance (el-A) is
200°C/W maximum for the UPTA51 0 and UPTB520 series and
is 155°C/W maximum for the U2TA506 and U2TA606 series.
The transient thermal impedance for the U2TA506, U2TA606
and the UPTA51 0 and UPTB520 series can be obtained from
the curves presented in Figure 2:

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APPLICATION NOTE

U-77
Allowable Peak Power Dissipation
The allowable peak power dissipation can be derived from
the following equation:
Ppklm.. ) = T j Im.. ) - TAmblent· ... , . . . . . . . . . . ,. (4)

Q)

o
c

'"

TI

e

Q)
Q.

E

p

Where Turnaxl is the maximum allowable junction temperature.
Forthe U2TA506, U2TA606, UPTA51 Oand UPTB520 series the
maximum junction temperature is 175°C.

c;;

E
Q)

.c

l-

e

Q)

en

1 0 r - - - r - - - - - r - - -....--""T'"--:~...,

c

£

.2

.5 1

10
100
Time (milliseconds)

1000

10,000

B

~

Figure 2. Junction to Ambient
Transient Thermal Impedance

e

~

:;

6

0

~

~

0

B) Peak Junction Temperature
The peak junction temperature of a device subjected to a
periodic train of power pulses can be calculated using the
previously derived effective pulsed thermal impedance
as follows:
T j Ipeak)= TAmblent + (PPk) (e p )
, (2)

-"
2

25

e

In the case of a single shot pulse the term for p reduces to
p = r(t)
and the equation used to calculate peak junction temperature becomes
T j Ipeak) = TAmblent + (PPk) (r(t)) ... , . . . .
. , , (3)

e

4

0

VCElSATI - Saturation Voltage (V)

Figure 4. UPTA510 Series. Maximum
Saturation Voltage vs. Collector Current

5

4

~

e

~

:; 3

0

.9
()

Q)

'5

2

0

-"

VCElSAT) - Saturation Voltage (V)

VCElSATi - Saturation Voltage (V)

Figure 3. U2TA506 and U2TA606 Series. Maximum
Saturation Voltage VI. Collector Current

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Figure 5. UPTB520 Series Maximum Saturation
Voltage vs. Collector Current

PRINTED IN U.S.A.

APPLICATION NOTE

U-77

Peak Power
The peak power can be expressed as follows:
p.k=(VeE ISATI) (I.k) + (V.E ISATI) (I.) .

Design Examples
. (S)

Where Ipk is the peak collector current of a square pulse of
current equivalent to the applied current pulse, VCEISAT) is the
transistor or Darlington saturation voltage at Ipk, VBEISATl is the
base-to-emitter saturation voltage and IB is the base current.
Figures 3, 4, and S are plots of VCEISATl for the U2TAS06,
U2TA606, UPTAS1 0 and UPTBS20 series Darlingtons and transistors. Figures 6 and 7 are plots of the VBEISATl. These curves
can be used in determining Ppk.

4~----~----+_--~~----~----~

~

c
~

:; 3

()

Using equations (3) and (S)

a
1:3

.. (3)
Where: TAmb,en! = 5SoC
r (t)
= r(SOmSec) = 175°C/W (from Figure 2)
Ppk
= (VeElsATI) (I.k) + (VBElSATI) (I.). . (5)
= (1.SV) (3A) + (2.1SV) (30mA)
(from Figures 3 and 6)
=456W
Therefore'
T'I ... kI = SsoC + (4 56W) (17.5°C/W) = 135°C

2

(5

Problem:
Calculate the peak junction temperature due to the inrush
pulse and the steady-state junction temperature.
Solution:
The inrush current can be approximated by a square wave
of 3A peak and SO milliseconds duration. The equivalent
square pulse of current will have the same energy as the
exponential pulse If the VeEiSATI of the Darlington is assumed to remain constant Since the VeEISATI will actually
drop as the Inrush current exponentially decays, the result
obtained from uSing the square wave approximation will
be conservative.

5r----.-----.-----,-----.-----,

.!!!

1. An incandescent lamp is controlled by a U2TAS06 Darlington operating from a 12V battery When switched on
the lamp draws an inrush current of 3A which decays
exponentially to a steady-state value of 300mA The time
constant of the Inrush current is 50 milliseconds and the
worst case ambient temperature is 5SoC The Darlington's
base drive IS 30mA dc.

()

-"

VBElSATI - Base-Emitter Saturation Voltage (V)
Figure 6. U2TA506 and U2TA606 Series Maximum Base to
Emitter Saturation Voltage vs. Collector Current

10r----,-----,-----,--,-,-----,

Since 135°C IS 40°C less than the maximum operating
junction temperature for the U2TA506 (Tj(m", = 175°C), the
Darlington is operating well within its rating.
The Steady-state junction temperature can be determined
as follows:
T,IOSI = (PIOSI ) (8,_A) + TAmb,en!
= (( 3A)( 73V) + (03A)(1.60V)) (155°C/W)
= 96°C

+ 5SoC

~

c

~

OJ

()

2. A U2T AS08 is used to drive a solenoid load in an impact
printer. The collector current waveform is as shown below
along with the equivalent square pulse:

6

a

1:3
.!!!
(5

Applied Pulse

4

()

~~
r-

-"

100/Ls-j

14
10
16
8
12
VBElSATI - Base-Emitter Saturation Voltage (V)
Figure 7. UPTA510, UPTB520 Series. Maximum
Base to Emitter Saturation Voltage vs.
Collector Current

6

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2ms'

r--T I

O~~~~LL~~~_J___L~_ _J_~

~I

15-57

_I

EqUivalent Pulse

I

L

PRINTED IN U.S.A

APPLICATION NOTE

U-77

The Darlington is switching in a clamped mode so the
energy stored in the solenoid inductance during the ontime is dissipated in the clamp and not in the Darlington.
The maximum ambient temperature is BO"C and the base
drive current is 20mA.

3. A UPTA530 is used to drive a high voltage DC motor in
a display application the current waveform as is shown
below:
Applied Pulse

O.BA

Problem:
Find the worst case junction temperature and determine if
it is within the maximum rating of the U2TA60B.
Solution:
Use equation (1) to determine eo
eo = (ej _A) (D) + (1-D)(r(t+T)) - r(T) + r(t)
j _A= 155°C/W (from Figure 2)

........ (1)

EqUivalent Pulse

e

L

D = .1mSec = .05
2mSec
r(t+T) = r(2.1 mSec) = 4.2"C/W (from Figure 2)
r(T) = r(2mSec) = 4.1°C/W (from Figure 2)
r(t) = r(.1 mSec) = 1.1°C/W (from Figure 2)
Therefore:
eo = (155°C/W) (.05)
+1.1°C/W
= 8.75°C/W
Using equation (5)

The base dnve is 200 mA and the worst case ambient
temperature is 65°C.

+ (.95)(4.2°C/W) - 4.1°C/W
Problem:
Determine the junction temperature to insure it is within the
maximum rating of 175°C for the UPTA530.

............. (5)
1.5A
VeElSAT) + 2V (from Figure 3)
(The VeElSAT) value at 3A was chosen to give a conservative
answer. If Tj is found to be greater than 175°C it may be
necessary to recompute using a closer approximation of
the actual VeEISAT) which varies as the current increases
from 0 to 3A.)
IB= 20mA

po. = (VeElSAT)) (10.) + (VBEISAn) (lB)
10 .=

Solution:
Using Equation (1)
eo = (200°C/W) (.1) + (.9) (52°C/W) - 50°C/W + 21°C/W
= 37.8°C/W
From equation (5) and Figures 4 and 7.
po. = (2.3V (.6A) + (1.2V)(.2A) = 1.6W
(Again VeEISAT) and VBEISAT) values at .8A rather than .6A
were used to insure a conservative answer).
Therefore, from equation (2)
Tj = 65°C + (1.6W) (37.BoC/W) = 12SOC

VBEISAT) = 2.1 V (from Figure 6)
(Again the VBEISAT) value at 3A was chosen to give a
conservative result.)
Therefore:
po.= (2V) (1.5A) + (2.1V) (.02A) = 3.04W
Now Tj can be determined from equation (2)
Tj = Tambient + (Po.) (eo) ... ..........
. ...... (2)
= 80°C + (3.04W) (8.75°C/W) = 107°C
This is ,well within the maximum rating of 175°C for
the U2TA60B.

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It becomes readily apparent from these examples that
Unitrode's TO-92 transistors and Darlingtons can be operated with significant safety margin in a wide variety of
pulsed-power applications.

15-58

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U-79

APPLICATION NOTE

GUIDELINES FOR USING TRANSIENT VOLTAGE SUPPRESSORS

1.0 Introduction
During transient periods, system voltages and currents are often many times greater than their steadystate values. These transients must be considered in
overall electronic systems design to insure required
circuit performance and reliability both during and
after the transient.
Transients may result from a variety of causes. The
most common of these are: normal switching operations (power supply turn-on and turn-off cycles),
routine AC line fluctuations, or abrupt circuit disturbances (faults, load switching, voltage dips, magnetic
coupling by electro-mechanical devices, lightning
surges, etc.). Voltage transients are a major cause of
component failures in semiconductors. Random high
voltage transient spikes can permanently damage
these voltage sensitive devices and disrupt proper
system operation. Catastrophic power supply conditions should not necessarily be the designer's prime
concern, since lower level transients can cause
improper operation of a system even though no component failures are caused. Normal power supply onoff cycles have the potential of emitting spikes with
sufficient energy to destroy an entire semiconductor
device chain. Any surviving devices are also suspect.
Trouble shooting, isolating, and replacing damaged
devices is time consuming and costly; especially
when performed in the field.

operating life. Unitrode has performed full power
pulse life tests for 100,000 pulses with negligible
change in characteristics. These devices are suitable
for almost any equipment and environment.

2.0 Choosing the Correct
Transient Voltage
Suppressor for
the Application
Certain critical terms must be defined before any
discussion of "how to" choose the correct TVS.
1. Stand-Off Voltage (VR) is the highest reverse
voltage at which the TVS will be nonconducting.
2. Min. Breakdown Voltage (BVm,n) is the reverse
voltage at which the TVS conducts 1 mA. This
is the point where the TVS becomes a low impedance path for the transient.
3. Max. Clamping Voltage (Vemax) is the maximum
voltage drop across the TVS while it is
subjected to the peak pulse current, usually
for1mS.
Figure 1 graphically shows all three terms.

Unitrode's TVS305 and TVS505 series of transient
voltage suppressors (TVS) offer the designer significant price/performance advantages over other protection methods. Their miniature size permits simple
"close-in" installation in applications where circuit
boards are dispersed throughout one or more electronic racks. Dispersed usage aids system trouble
shooting and affords transient voltage protection
where internal system disturbances such as those
caused by inductive load switching could occur.

III
J

1 mAf-----../1----L

In spite of their small size, the TVS305 and TVS505
suppressor series can dissipate 500 watts and 150
watts (respectively) of peak pulse power for 1 millisecond. Response time to transients is just about instantaneous - about 1 x 10-12 seconds. These
devices perform to their data sheet specifications
without Significant degradation throughout their

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+------------~~----==~+-~~--V

VR BV Vc

(

+
Figure 1 -

15-59

TVS Characteristics

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APPLICATION NOTE

U-79

2.1 Determining Pulse
Power Levels

2. Stand-off voltage (VA) - From the TVS series
selected, choose the device with the stand-off
voltage equal to or greater than your normal
circuit operating Voltage. This insures that the
TVS will draw a negligible amount of current
from the circuit during normal circuit operation. The electrical specifications for the
TVS505 series are shown in Figure 3.
3. Maximum Clamping Voltage (Vemax) - Determine the clamping voltage of the device
chosen for the transient given and be sure it is
below the voltage that might damage any
components in the protected circuit. See
Figure 3.

Since a zener TVS has an almost constant clamping
voltage throughout a transient pulse, the transient
pulse power (Pp) equals the peak pulse current (Ipp)
multiplied by the clamping voltage (Vc).

100.---.----,---.----,---,

2.2 Choosing the Appropriate
Transient Voltage
Suppressor

3:
UJ

UJ
(f)

..J

:::>
CL

1. Pulse power (Pp) - Choose the TVS series that
will handle the Transient Pulse Power. To determine Transient Pulse Power use the simple
equation in section 2.1. If Ipp is not known or
measurable, it can be calculated - see Sections 3 and 4. The pulse duration vs. pulse
power graph on the Unitrode TVS305/
TVS505 data sheet can then be used to determine the TVS series that will handle the
transient. This graph for the TVS505 series is
shown in Figure 2.

TVS
Part No.

TVS50S
TVS51 0
TVS512
TVSS15
TVSS18
TVS524
TVSS28

Stand-off
Voltage
VA
V
5.0
10.0
12.0
IS.0
18.0
24.0
28.0

Figure 3 -

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Max.
Leakage
Current
IA@ VR
lolA
300
5
S
5
S
S
S

0.1 %

3:
o
CL

The three most important factors in choosing the
appropriate TVS for your application, in their order of
importance are:

Min.
Breakdown
Voltage
BV(mln) @ 1mA
V
6.0
11.1
13.8
16.7
20.4
28.4
30.7

MAX. DUTY CYCLE

~

a:

~

«
UJ
CL

lOOnS

llLS

lOlLS

100ILS

lmS

10mS

PULSE TIME (tp)
Figure 2 -

Max.
Clamping
Voltage
Ve@ lA
V
7.4
13.2
16.5
19.7
23.8
32.4
3S.9

Peak Pulse Power vs. Pulse Duration

Max.
Clamping
Voltage
Ve@
5A
lOA
V
7.9
14.4
18.S
22.2
26.0
37.0
41.0

Max.
Peak
Pulse Current
Ipp
A
53.7
30.3
23.8
19.8
16.3
11.9
10.7

Max.
Clamping
Voltage
Ve @ Ipp
V
9.3
16.5
21.0
25.2
30.S
42.0
46.S

Electrical Specifications @ 25°C

IS-60

PRINTED IN U.S.A.

APPLICATION NOTE

U-79

If the actual pulse power and pulse width are different
from those listed on the data sheet, the clamping
voltage can be calculated. The actual calculation
method is beyond the scope of this note. Instead, we
offer a graphical approximation using Figure 4. The
approximation is based on the ratio of the actual and
rated pulse power.
15
14
13
CR

12
11
10
0

/

----2

a. Calculate Pp (actual):::1.38Vm,n Ipp.
b. For Pp (rated) use value from TVS data sheet
curve (See Fig. 2 for example).
c. Calculate Pp (actual)/Pp (rated).
d. Use Fig. 4 to find corresponding value of C.R.
e. Calculate Vc = C.R. x SVm,n.

-

~

6

4

The procedure is as follows:

8

2.3 Installation Considerations

10

1. Locate the TVS as close to the device or circuit
to be protected as possible.

p, (actual)
p,(rated)

C R :::: Clamping RatiO :::::

V,

2. Minimize the "common path" through the TVS
to minimize voltage spikes produced by fast
risetime transients in lead and wiring stray
inductance. See Figure 5.

VBmin

Figure 4 -

Graphical Approximation for the Clamping
Ratio

Undesired
Transient

Long /
Common

~

Path

i~
Input
TranSient

Vp = L.Ql where
dt
L" .02,..H/inch

L ___f~~~~n.E.~ ___ .J

r------------,
I

1

I
I
I

1
1

I

Short
Common / '

Minimized

TranSie~
V

1 - 1- - -

Path~

I
I
I

t '

IL__ ~ORRECT METHO~ _ _ ..JI
Figure 5 -

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LEXINGTON, MA 02173 • TEL. (617) 861-6540
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Minimizing the Common Path

15-61

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U-79

APPLICATION NOTE

3.0 Transient Levels
and Waveforms
3.1 Voltage, Current and
Power Levels
In addition to the magnitude of the voltage, current or
power, the waveform or pulse width should be
specified, as shown in Figure 7, for example.

Since TVS tests and specs may be written in terms of
voltage, current or power levels, the relationships are
shown in Figure 6 for (a) field conditions and (b) test
conditions.
a) FIELD

line impedance
(wires. etc.)

voltage
source
(Lightning. etc.)

circuit being
protected

TVS

~f r I

Vs

TVS

Rs
series test
resistor

b) TEST
test generator

Figure 6 -

instrument to
measure clamping
voltage (scope. etc)

Equivalent Circuit for Field and Test Conditions

3.2 Typical Transient Levels
Martzloff and Hahn in their paper on transients on
120 volt power lines* produced this table showing the
surges recorded at a number of different locations

over a two year period. The table indicates two
primary causes of transients; load switching within
the house and lightning storms.

Table 1*
Detailed Analysis of Recorded Surges
Most
Severe Surge
Duration

Average

Surges
per Hour
Remarks
1
700
10,..s
007
A·'5
750
2
A·20
20 j..(s
014
fluorescent light
3
8-0 5
1 cycle
600
005
sWitching
4
8-0 5
400
2 cycles
02
640
5
C
10 total
5"
8-0 3
400
1 cycle
8-03
6
250
001
cycle
7
81
1800
1 cycle
810
1 cycle
800
003
Ilghtnmg storm
1200
10 j..(s
8
8-0 5
4
cycles
01
C
300
1
9
8-0 25
1500
1 cycle
same as most severe
all burner
02
10
25
2500
1 cycle
04
B 0 25
2000
all burner
cycle
water pump
11
, cycle
same as most severe
8-0 2
1500
015
12
8-02
1700
1 cycte
8-0 2
1400
all burner
1 cycle
006
13
8-0 1
350
1 cycle
too few to show typical
4 total
house next to 12
14
800
1 total
lightning
C
15 ~s
15
8-025
800
3 cycles
8-025
600
rural area
005
13
16
8-015
400
151-1s
8-013
200
04
surges
30 tAS
Street pole
8-05
4 cycles
5600
8-0 3
1000
1 cycle
01
lightning stroke nearby
Hospital
2700
C
900
01
lightning storm
C
9"
5"
Hospital
1100
8-0 3
1 cycle
too few to show typical
4 total
Dept store
, cycle
8-0 5
300
05
B05
300
cycle
Street pole
1400
4 cycles
8-0 2
600
4 cycles
007
lightning storm
B02
tA long OSCillation 8-damped OSCillation C-unldlrectlonal Number shows frequency In megahertz
House

Typet

Crest
(volts)

Most
Frequent Surge
Duration
, 5mHz
Crest
(~s or
(volts)
cycles)
Typet
A·15
300
10 lAs
A-2 a
500
20,,",5
8-0 5
1 cycle
300
8-0 5
300
2 cycles
too few to show tYPical

(j..!sor

cycles)

l'

a-a

I
I

I'
I

cy~e,

I

1

-I'

"Reprinted from Surge Voltages In ReSidential and Industrial Power Circuits by Francois D. Martzloff. Member. IEEE. and Gerald J Hahn Reprinted by
permission from IEEE Transactions on Power Apparatus and Systems. Vol. PAS·89. No 6. JulylAugust 1970. pp. 1049·1056 Copyright 1970. by the
Institute of Electrical and Electronics Engineers. Inc. Printed in U.S.A

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

15-62

PRINTED IN U_S_A.

U-79

APPLICATION NOTE

3.3 Commonly Used Test
Waveforms

Ipp as specified on data sheet.

1. The 10 x 1000p,S Test Waveform used by
many TVS manufacturers, also by incoming inspection departments of users, represents
some commonly encountered transients. (See
Figure 7).

0----'-11--1

Figure 7 -

2. The IEEE Standard (ANSI C 37.90a -1974) for
surge withstand capability. (See Figure 8).

Commonly Used Test Waveform

2.5KV
O---f

3.4 Surge Testing

R = 150Q

Figure 9 shows a typical test set used to produce an
exponentially decaying current pulse of 1mS to 50%
down. (10 x 1000p,S). The 1mS waveform is used by
many manufacturers to test and characterize their
TVS devices for pulse power and clamping voltage.

2K

5.0W

6p,S to 50% down.
Figure 8 -

5.4Q
20W

Reset
---L.

+ 12V

Adjustable

1-

Sprague
1112001

J

+
350V P.S.
200mA

More Complex Standard Waveform

250/-lf
350 WVDC

Surge-i

•

Unitrode
L1R05554F

Unitrode
1N5550

Unitrode
1N5612
or1N5613

DurtE
CVR
0.1Q

Figure 9 -

UNITROOE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (7l0) 326-6509 • TELEX 95-1064

Suggested Set-up for Surge Testing

15-63

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U-79

APPLICATION NOTE
After the contacts switch at t

4.0 Examples

0, e

di
= - ldt'

and when using a TVS the change in coil current

4.1 Relayand Solenoid
Applications
When the energy stored in the coil inductance of a
relay or solenoid is released it can damage contacts
or drive transistors. It can also produce EMI
interference. A TVS used as shown in Figure 10 will
provide reliable operation.

Ql

Vc Referring to Figure 10d,
l
10
VcJRL
Veel. Note that the higher
t,
dildt
Veil
RL Ve
the Ve of the TVS, the shorter the cu rrent
decay time.
'dt

=

=

In order to select the proper TVS, determine:
1. Peak pulse power Pp

= Ip x

Ve, where Ip

2. Pulse time tp (@ 50% down point of iTvs)

Just before the switch opens, the initial inductor cur·
rent 10

=

=1

0,

= .!2...
2

3. These values of Pp and tp are used with graphs
of pulse power vs. pulse duration provided on
the TVS305 and TVS505 data sheet to select
proper device. See example in Figure 2.

= ~:.

This is the worst case (maximum) current and
assumes the switch was closed long enough for the
circuit to reach steady-state.

For TVS'
1. VR> Vee
2 V, VAcpeak
Figure 1Dc, AC Coil and Contacts.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

Figure 10d, Simplified Current Waveform
in the TVS.

15-64

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U-79

APPLICATION NOTE
NOTE: In some cases, because of accessibility,
the TVS must be located across the coil; in
that case a diode should be used in series
with the TVS, connected back to back as
shown in Figure 11.

Sample Calculations:
For example, using the circuit of Figure 10a,
and sample values of:
Vee = 14V, L = 1mH, and RL = 2Q;
For Vee = 14V, the next higher VA is 15V. (Note that
Ve = 22.2Vat 10A).
STEP 1:

Diode

For diode: PIV .. Veo

10

=

Pp

= Ip X

t

=

TVS

STEP 2:

1

SO

STEP 3:
Figure 11 -

Using TVS Across Coil

Vee
RL

= ~ = 7A
2Q

Ve

Vee/RL
\bIL

tp =

= 7.0A
=

X

22.2V

1412
22.2/10.3

0.3~ms

= 155W

= 0.32mS

= 0.16mS = 160l-£S

From Figure 2, Ppmax for tp = 160l-£S is
1200W, which is well above the circuit
value of 155W.

4.2 Protecting Switching
Power Supplies

Transients can produce failures because of
their own high energy level; and also they can cause
improper operation and component failure.

The designer needs to protect against:

Figure 12 shows a simplified schematic of a typical
switching power supply.

1. Load transients
2. Line transients
3. Internally generated transients including
those produced by internal faults or
failures.

Referring to Figure 12, the TVS devices shown protect
the following circuit components:
1.
2.
3.
4.

the
the
the
the

rectifiers.
HV switching transistors.
output rectifiers.
control circuitry.
,.'

110VAC
60 Hz

Figure 12 -

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Typical Switching Power Supply

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APPLICATION NOTE

U-79

4.3 Protecting
Microprocessor
Based Systems
While most microprocessor and Ie semiconductor
manufacturers design some form of diode-resistive input clamping network on the chip itself, transient
voltage protection offered is very minimal - on the
order of a few watts of pulse power. Manufacturers
are also reluctant to make device performance and
reliability claims when power supply operation

extends beyond the maximum rated level of the individual device for even relatively short durations
such as those that may be encountered during on·off
transitions. Therefore, there is a need for some external protective device to suppress voltage transients,
as shown in Figu re 13.

~

T VS

~~
-::!:::-

~~
-==

Address Bus

I--

I
Clock
CPU

'--- I--

.--

I

r-------,
'---

I-ROM

.--

-

--

'":::J

aJ

"2

c0

RAM

'":::J
ro'"
_0
aJ

0

-

-

1/0

~

TVS~~

-:b

~~
-..=-

l-'I.vv...

TVS~~
-..=-

Figure 13 -

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

-

iJ.~

~ ~ ~~ ~~ TVS

--...!:-

--

Protecting Microprocessors

15-66

PRINTED IN U.S,A.

APPLICATION NOTE

U-79

5.0 Alternative Protection
Devices
Other protective devices such as MOVs, spark gaps,
and crowbars have one common disadvantage when
compared to zener TVS products; the response time is
from nanoseconds to as much as tens of microseconds as compared to 1 pS for an avalanche zener
diode. Even 50nS is long enough to allow a transient to
destroy the small junctions used in most integrated
circuits, logic, fast transistors, etc.

TVS products do not significantly degrade even after
100,000 transients.
In many cases, the zener TVS and one of the alternative devices can complement each other. For
example, when used with an SCR crowbar, the zener
TVS will keep the voltage during a transient to an
acceptable level until the crowbar, which may take
10l-'S to short the line, can protect the load circuits,
and in the case of a heavy transient protect the
smaller TVS as well.

In circuits where transient pulses are fairly common,
device degradation becomes a significant problem.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

15-67

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APPLICATION NOTE

U-81

DETECTING IMPENDING CORE SATURATION
IN SWITCHED-MODE POWER CONVERTERS·
ABSTRACT
A new low cost concept termed "mismatched flux"
has been developed which not only prevents impending saturation of the core but also provides
symmetrical switching current in power switches in
Pulse Width Modulation switched-mode converters
except at low flux density. The detecting signal is
obtained by mismatching the flux in the outer legs
of an E-E core configuration.
INTRODUCTION
Opposite polarity power pulses are applied to the
power transformer in a PWM converter to transfer
power from the primary to the secondary windings.
The volt-second integral of these pulses averaged
over one or more cycles should be zero to avoid
any problems with transformer core saturation.
In practice, however, imbalance occurs due to nonideal characteristics of power switches, mainly the
switching times (including storage and delay times)
and saturation voltage. Even though the imbalance
in the pulse width of the drive current provided by
a PWM control circuit is very small compared to
power switches, it can drive the core into
saturation.
Core saturation in PWM switched-mode converters
can cause problems such as secondary breakdown
in switching transistors, exctssive voltage and current stress on the rectifiers, and EMI problems.
The unique circuit described in this paper develops
voltages proportional to the flux density in the
core. When the maximum flux densities at the end
of the positive and negative cycles.in the core are
not the same, unequal voltages are produced during
the positive and negative cycles. These voltages are
fed back to the PWM control circuit which adjusts
the widths of its output pulses until the amplitudes
of these two voltages are equal.
This technique, which can be applied in push-pull
converters as well as bridge type converters,
prevents core saturation and provides symmetrical
primary current during the positive and negative
cycles. It allows the most efficient use of the
power transformer. In a buck type regulator, the
current limiting function can be performed with
this same technique.
THE UNBALANCED PWM CONVERTER
Figure 1 shows the typical push-pull converter and
its associated current and voltage waveforms. Due
to the difference in switching times and VCE (SAT)
of transistors Q1 and Q2, the transtormer core IS
driven into saturation. The volt-seconds applied by
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL (617) 861-6540
TWX (710) 326-6509. TELEX 95-1064

transistor Q2 is higher than Q1 as shown in Figure
1d, even though the secondary current is the same
during on-times of transistors Q1 and Q2.
Three important observations can be made from
these figures:
1. Information concerning the magnitude of
the imbalance of the flux can be derived by
examining the current in the rectifier diodes
(Figures 1e and 1f) during the dead-band
period.
2. The slopes of the primary currents when Q 1
and Q2 are conducting are not the same.
3. The familiar equation IC1/ID1=N~/N1 is not
applicable when the flux denSity in the
transformer is not symmetrical during the
positive and negative half-cycle.
Under normal operating conditions and during
dead-band period, the path for the current flowing
in the output inductor L is provided by diodes D1
and D 2. The inductor current is divided between
these two diodes. The magnetizing current I MS
flows in the entire secondary winding. Note that
the magnitude of IMS remains the same during the
entire dead-band period because the voltage across
the secondary winding is zero. The overall result is
that one diode conducts more current than the
other diode. The current flowing in these diodes
is:
iD1 =.i..
2

+ IMS

iL
iD2 =--IMS
2

Current in Rectifier
(1 )
Diode D1
Current in Rectifier
(2)
Diode D2

Subtracting iD1 from iD2 and rearranging
iD1 - iD2

I MS =

(3)

2

Thus, the current flOWing in diode D, and D2
allows us to determine the exact amount of imbalance in the flux density during the positive
and negative half-cycles. Figure 1g, which is
calculated from diode current D1 and D 2, shows
the operating flux density of a core in only the
1st quadrant of a B-H curve.
When transistor Q, or Q2 turns on, this magnetizing current is reflected back into the primary winding according to the equation:
I
PM

15-68

- 2(N 2)
N1

I MS

(4)

PRINTED IN U.S.A

U-81

APPLICATION NOTE
The dotted line in Figures lc and ld shows the
reflected current in the primary winding. Since
the flux density is not symmetrical around zero
in the S·H curve, the collector current in Transistor
Q 1 is lower than in Transistor Q2' When the
magnetizing current (dotted line in ~igure lc) is
added to the actual measured collector current
(solid line) in Transistor Ql' it will produce a
linear slope compared to the rounded slope of the
measured collector current. The equation

B+

102

Figure la.

I'

--=.t =. N2
IDl

(5)

N1

It4

will hold true, where l'c1 is equal to the magnetizing current reflected into the primary winding
plus the actual measured collector current IC1'

°

Figure lb. Voltage Waveform at Collector of 02'
O.8SAI..

Similarly, when Transistor Q 2 turns on, the transformer transfers energy from the input power
source to the secondary. Some energy is also stored
in the core due to the unsymmetrical flux density
in the core. The magnetizing current (current level
above dotted line in Figure 1d) is subtracted from
the measured collector current.

! . . . >(1
... O.7A

-----V

-;O.2SA
~-------------

Figure lc. ICl Current Flowing in Transistor 01'
1.80A

The equation

I'

tsrl---

L . - .- - - - - ' _ _

lolA
O.8SA

c2

ID2

N2

=N"1

(6)
~--o

will hold true, where IC2 is equal to the actual
measured collector current minus the magnetizing
current reflected into the primary winding.

Figure ld. IC2 Current Flowing in Transistor 02'
1.30A

The imbalance in volt-seconds causes the flux
density to drift towards one side of the hysteresis
loop. This causes an imbalance in the collector currents of the transistor switches. The imbalance in
volt-seconds will be compensated, to some extent,
by an adjustment in the collector currents of the
two transistor switches. As the collector current
decreases the storage time increases and VCE(SAT)
decreases as shown in Figures 2 and 3. This effectively increases the volt-seconds. The I R drop in the
primary winding also helps to balance the voltseconds in the transformer. These collector currents will vary until the proper volt-second balance
is obtained in the transformer. If no corrective
scheme is provided to balance current in the
switch, the following disadvantages are present:

- - - - , .70A

Figure le. Load Current in '01'

---,

1.30A

~==------~--~~====--o
Figure If. Load Current in '02'
O.S5A

1. The required current ratings ofthe transistors
and rectifiers must be increased.

~"---Ims

+

2. The VCE(SAT) losses will be increased.
Furthermore switching losses will be even
higher, especially in high voltage power
converters.
UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173' TEL. (617) 861-6540
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1.2A

°

Figure 19. Magnetizing Current in Secondary.
Figure 1. Gallery of Waveforms of a Push Pull P.W.M.
Switching Regulator

15·69

PRINTED IN U.S.A.

U-81

APPLICATION NOTE
3. Losses in the core increase as a function of
the square of the maximum operating flux
density. As the core temperature goes up,
the losses in the core also increase, thus, the
potential exists for thermal runaway in the
core.
4. The leakage inductance is proportional to
the maximum operating flux density. The
imbalance causes high leakage inductance,
and excess voltage stress across the transistor
and rectifier.
5. If the core goes into saturation, it creates
excessive current in the power switches, can
result in forward bias second breakdown,
clamped reverse bias second breakdown,
and increased radiated and conducted EMI.
I
Condition: IB1 = IB2 =TIi, VCE =200V

3

U

E.'"
'"
E

\

2

"

i=
iI1

~

E
0

ci)

o

o

2

R,

2~65~7

,

3

R,

r-.. .....

4

5

6

-r-

7

8

9 10

Ie - Collector Current (A)

, Figure 2. Storage Tim'a vs Collector Current
_ Ic
Condition: IB1 -10
~

3

I

'"
19'"

BASIC PRINCIPLE
An air gap in the E-E core can be used to prevent
core saturation in PWM converters. The air gap
reduces residual flux density in a square loop
transformer and prevents core saturation during
the start-up condition. However when there is a
volt-second imbalance, the air gap does not prevent
core saturation.
If the air gap is placed in only one of the outer legs
of an E-E or EC core configuration, as shown in
Figure 4a, then it allows a means of detecting core
saturation, and by using this signal, to provide
symmetrical flux swing in the core.
The primary winding and secondary winding are
placed in the center leg of the E-E core, while the
auxiliary winding is placed in the outer leg which
contains the air gap.
The peak output voltage of the auxiliary winding is
detected with Diode 0" O2 and Capacitor C,. The
Resistor
in parallel witll Capacitor C, provides
the reset for another cycle by discharging the capaand C, is
citor. The voltage developed across
proportional to the maximum rate of change in
flux at the instant when the transistor switch turns
on.
The total amount of flux passing through the outer
leg with the air gap is inversely proportional to the
magnetic length of the opposite side of the leg. As
the flux density in the center leg increases, a larger
and larger area of the core at the point where the
two E cores meet on the opposite side of the leg
will become saturated. Note that only the edge of
the core will saturate, while the rest of the core
(leg with no air gap) will not saturate. As it satu'rates further, the reluctance of this leg increases,
thus its effective magnetic length increases. This
phenomenon forces more flux into the leg which
has the air gap.
The voltage developed in the auxiliary winding is
expressed by Faraday's Law:

I

2N6547

'0

d2]
V -- N [dt- x 10-8

>
c:

2

0

'';:;

Where N is the number of turns. Thus the magnitude of developed voltage will depend upon the
rate of change in flux with respect to time. Since
the air gap is in only one leg of the E-E core, the
term Id2/dtl changes continuously and depends
upon the flux density in the center leg. Thus the
output voltage from the auxiliary winding also
varies with respect to time.
The same results can be obtained with using a core
as shown in Figure 4b. The advantage of using this
core is that the leakage inductance will be less
compared with the previous technique.

E

ai=
::l

~
w

I

U

>

o

o

I.- ~

2

3

i--""

4

/

",

5

6

7

8

9 10

Ic - Collector Current (A)

Figure 3. VCE (SAT) vs Collector Current
UNITRODE CORPORATION' 5 FORBES ROAD
LEXINGTON, MA 02173' TEL, (617) 861-6540
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APPLICATION NOTE

U-81

Figure 4a. Air Gap in Only One Leg of E-E Core

Figure 4b. Tapered Air Gap in One of the Outer Legs of
the E-E Core

Figure 5 shows the B-H curve (solid line) of an E-E
core with an air gap in only one leg. It lies between
the E-E core with an equal air gap in both sides of
the outer legs and a core with no air gap. From this
figure it is obvious that Idcp/dtl changes with the
flux density and is a non linear function. Figure 6
shows variation in inductance with magneto-motive
forces.

be accomplished by gating the output voltage of
the auxiliary winding with a pulse width of a few
microseconds.

Figures 7 through 9 show the voltage developed in
the auxiliary winding at different values of the
magnetizing current. The magnetizing current is
directly proportional to the maximum flux level
for a given transformer. I n these waveforms the
initial flux density is set at zero and the allowed
flux swing is in the 1st quadrant only. The magnitude of the error signal (when the transistor switch
turns on) is the same in all three figures since
dCP2/dt is the same. As the magnetizing current
increases, the developed error signal due to dCP2/dt
in the winding around the outer leg (with the air
gap) also increases because dCP2/dt increases with
flux density. From the shape of the collector current it is obvious that the core is not saturated.
Figure 10 shows the voltage developed across
Resistor R 1 from the auxiliary winding and also
the current in the two transistors Ie, and IC2' The
current waveforms show that there is no symmetry
in the flux of the core. Figure 11 shows the same
output voltage peak detected by paralleling Capacitor C 1 across Resistor R l' The voltages developed
are not symmetrical during the alternative half period of the cycle. Figure 12 shows that when the
developed voltage is fed back to the control circuit,
it produces flux symmetry in the core. This can be
seen by the equal magnitude of the collector
currents.

Figure 5. Effects on Hysteresis Curve with Air Gap in Only
One Leg of E-E Core

_H

The initial amplitude of the voltage from the
auxiliary winding (after the transistor turns on) can
be used to further improve performance. This can
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509. TELEX 95-1064

o

H

~

Figure 6. Inductance vs Magnetomotive Force

15-71

PRINTED IN U.S.A

III

U-81

APPLICATION NOTE
2V

500mV

100mV

r

~

1

1

1

1

-

~

1

""',.~'

Error Signal
V Scale =
.5V /div

I-

100mV

-

fA

.A

-1

1

IC1 Collector

f-' !-fl

~
100mV

51lS
Primary cur-

.... ,.... :- .....

- ..I

200mV

'5/lS

-

Current 1A/cm

'--

Diode Current
ID1,ID2
1A/cm

....

L-: \.

IA

...,

1

-

1

...

~-' \.

rent IC1' IC2
2A/cm .
Voltage
developed at
Point A in
Fig. 4, due
to unequal
volt-sec,C1
is removed

200mV

2V/cm.

Figure 10. Without a Feedback
200mV

2V

500mV

100mV

r1
.l J

- r-J

-

~

5/lS

1
.I

J

1,\

L

...,

"I

-

r~

\'"! !-! [

200mV

I

,.

fA

A

IC1 Collector

5/lS

~

I

100mV

Primary cur·
rent IC1 _ IC2
2A/cm.

II

1

Voltage
developed at
Point A in
Fig.4 due to
unequal volt
sec 2V/cm.

Current 2A/cm

-

1.0

H l

Error Signal
V Scale =
.5V/div

Diode Current
ID1,ID2
1A/cm

200mV

Figure 11. Without a Feedback
100mV

500mV

r"'

I\.
1

.I.

-

.... ..,

-

... "1.

~

I

... .,

_

L.J- ... -

200mV

51lS

I'"

I\.

.... ~

..,

I

... k

~U

-,...I- ~

100mV

I

....~-

Error Signa I
V Scale =
.5V/div

2V

IC1 Collector

T 1

Current 2A!cm

5/lS
Primary current IC1 _ IC2
2A/cm.

:1 f1

Diode Current

1
Error Signal
at Point A
in a closed
loop.

ID1,ID2
1A/cm
200mV

Figure 9. Error Signal Developed at
Magnetizing Current = 700 mA

Figure 12. With a Closed Loop

CLOSING THE LOOP

2. Into the non-inverting input. This can be
achieved by (a) lifting up 4.7K from ground
in the N I circuit, (b) adding 100n in series
with 4.7K and the other side of 100n returning to ground, and (c) adding a feedback
signal at the junction of the 1000 and 4.7K
resistors. The peak to peak amplitude of the
signal fed into the N I input has to be less
than the output ripple voltage fed into the
I NV input. Feeding signals in the N I or I NV
inputs will provide flux symmetry in only
DC conditions.

The developed voltage across R 1 and C 1 is fed
back to the control circuit (UC3524).
This voltage can be fed into the control circuit
in one of three ways:
1. AC coupled into the output of the error
amplifier. Since this amplifier is a transconductance design, the output has very
high impedance (approximately 5 Mn).
The feedback signal from the auxiliary
winding is modulated at this point with
the output voltage of the error amplifier.
The output pulse width is corrected to
provide symmetry as well as to prevent core
saturation.
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200mV

3.

15-72

Feeding the signal at the INV input. This
requires an opposite polarity signal, which
can be obtained by reversing the diodes in

PRINTED IN U SA

U-81

APPLICATION NOTE
HALF BRIDGE CONVERTER

Figure 4. The modifications required to
change the circuit are the same as listed
above. Also in this case the peak to peak
amplitude of the signal fed into the INV
input has to be lower than the peak to peak
output ripple voltage fed into the INV input.

The method described in this paper can be used
for half bridge configurations as shown in Figure
14. It does not require a low ESR, high voltage
capacitor in ~eries with the primary of the transformer. The DC balance is provided by Capacitors
C1 and C2' Thus, this technique offers a low cost
solution in preventing core saturation and in providing flux symmetry.

To obtain adequate signal at very low input voltages
may require a low V F diode.
PWM PUSH-PULL CONVERTER

BUCK REGULATOR

A complete schematic of the PWM Push-Pull Converter using this technique is shown in Figure 13.
The power switch is a Unitrode hybrid circuit, the
PIC636, which is housed in a 4 pin electrically
isolated TO-66 package. It provides the advantages
of low RFI and ease in heat sinking due to the
electrically isolated package. Constant base drive is
provided by small signal transistors (2N2905). The
output rectifier is a center tap TO-220 fast recovery (35nS) rectifier. The control chip is a
UC3524 PWM voltage regulator. The soft start
function is performed at the NI input by allowing
the reference voltage to corne up slowly when the
input power supply is turned on. The feedback
signal from the auxiliary winding is fed into the
compensation terminal (output of the error amplifier) with Resistors R2.' R3 and Capacitor C2' The
steady state and transient response of the circuit
was evaluated: it provides flux symmetry and
prevents core saturation under these conditions.

E m =25V

1,00

lN914

~p,

lN914

,

27n

914

':1. ,

1K

1K

'N

.7K

The circuit shown in Figure 15 is a high perform~
ance buck regulator. It utilizes the Unitrode
power hybrid switching regulator circuit, PIC625.
The high performance transistor chip and fast
recovery (20nS) rectifier diode are mounted in an
electrically isolated 4 pin TO-66 package. The
control circuit is a Unitrode Corp. PWM voltage
regulator chip. The inductor L utilizes the equal
E-E core configuration with unequal air gaps in the
side legs. The main winding is placed on the center
leg while the two auxiliary windings are wound on
the outer legs. The output voltage from these
auxiliary windings are compared using Transistor
Q3' The magnitude of the current limiting is
adjusted with Resistor R l' When the current in
the hybrid circuit, PIC625, exceeds the set current

J27n

r-----'
'N'9~: v

~~.

~N2905

4.7K

In a buck regulator, the method described here can
be used to provide the current limiting function
without a current sense resistor.

'7K

I

• 7K
INV

CA

I

Vm

4.7K

NI

~

r< :

PIC63SL _ _ _

D3

UC1524

lj:

1"'---

coo-

R.

~f----<
~~ ro

-

I
I
I

f-oVREF

22K

R4 = lOOK
C4=2~F
Cs= Tp.F

C6= 005p.F

CT
RT
8

•

I

Comp
51114
PIC636

18K

R2
3JK

Ferroxcube
782E272

l

I
-- E,"t=5V
If
"?I"T
-r-~
I ~-U-<'-=l=~F
...J
Ip'
r r-,

I

~

p'

L

0,

I
~

UES2401

I~N914
I
~

5DO

I

OD

N = 3eT

I

L. _ _ _ _ _ ..J

C,

1p'

C3

.005T

N1 = lOT
N2=8T

C,

RJ
lOOK

-.l

,05J.1FT

R1
1K

Figure 13. PWM Push-Pull Converter
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509. TELEX 95-1064

15-73

PRINTED IN U.S.A

APPLICATION NOTE

U-81

limit, 03 turns on and the voltage developed across
C1 and ~2 is fed into transistor switches 01 and
02. The transistor 02 removes tt\e drive current
from the PIC625 instantaneously. It provides
protection during the transient condition. The
transistor switch 01. provides the function of cu~­
rent foldback by discharging the soft start capacItor C2 . The transient response o! this cir~ui~ is
shown in Figure 16. The current In the sWitching
transistor during short circuit and normal operation mode is shown in Figure 17.

CONCLUSION
The low cost circuit described in this paper prevents
core saturation due to unsymmetrical flux, and
provides equal collector current in the transistor
switch and in the rectifier diodes. The power
dissipation of these switches is kept in balance.
Further advantages of this approach are:
1. a.

In a push-pull converter, the need for an
inductor is eliminated, thus, the size,cost
and weight are reduced.
b. Transient response time is improved.
2. In a bridge type converter, a capacitor (low
ESR, high voltage) in series with the primary
of the power transformer is not required. (In
conventional designs even with this capacitor,
there exists a danger that the core can be
driven into saturation under transient
conditions).
3. In a buck type converter, it allows the current limiting function to be performed
without a current sense resistor, thus improving the performance.

Ein = 350V
To Control Circuit

c,
UMT1009

4. Storage time and V CE(SAT) matc~ing
of the transistor switches are not reqUired.
5. More efficient use of the transformer, allowing smaller, lower cost magnetics is achieved.
6. In an off-line converter, isolation is maintained.

The flux correction circuit eliminates the need for
capacitor C3 in series with primary of the transformer

Figure 14. Half Bridge Converter

Ferroxcube

782E272
PIC625
r----'.

Em = 26V

4.7K

lK

220K
1
16

UK
2

120-

UK ~

~

b;;i~.....

13

-016

n

H~
2.2K

9

,...,7
8

6

IL-

..

lN914

Cin

:

~:

lOOn

UC3524

I
I

I

4

5

11'0~ I-- 18K

~T

TOO5/l

I

r

___

I
I
I

F

(

lK

large
airga

5T1.Tf'0T

lN914 1
°2

IN914
°2

i,

g0

I

~...J

lK
°1

Eout = 5V

L

I

I

I

4.7K

lOT

Ll

Ir

:~

Co

°3
lpOn
A,
A2
lK

lnFf

02. 03.

01 - 2N2905
~ - 2N2222

Figure 15. High Performance Buck-Type Switching Regulator
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173' TEL. (617) 861-6540
TWX (710) 326-6509' TELEX 95-1064

15·74

PRINTED IN u.s A

U-81

APPLICATION NOTE

5pS

5mS

2V
Collector
Current

I.... ~

II

1/1

Short-circuit
IL = 1A
Collector
Current

I--

Output
Voltage

~,....

~

~~

50mV

50mV

V = 2V/div, H = 5mS/div

V = 1A/div, H = 50pS/div
Figure 17.
Collector currents, IL = 1A and under
short circuit conditions.

Figure 16.
Collector currents for step change
in load from 1A to 5A, to 1A.

REFERENCES
1. Walter J. Hirschberg, "A New PWM Control
Technique That Eliminates Transformer
Unbalance Problems in Power Converters",
ACDC Electronics Powercon 6, 1979.

2. John Bullinga, "Transformer with Means of
Sensing Impending Saturation", Collins
Radio, Powerconversion International, Sept/
Oct 1979.

II

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LEXINGTON, MA 02173' TEL. (617) 861-6540
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15-75

PRINTED IN U.S.A.

U-82

APPLICATION NOTE
HYBRID CIRCUITS FOR LOW VOLTAGE
SWITCHED-MODE CONVERTERS

printed onto the BeO substrate and then fired
in high temperature furnaces. For optimum performance, the tolerances of the thick film resistors
are maintained within 10% of their design values.
The semiconductor devices used in the circuit are
all silicon planar passivated devices and are gold
eutectic mounted. Aluminum ultrasonic wire
bonding is used for interconnections.
In the second stage the BeO substrate is soft
soldered to the header for good heat transfer.
A copper slug is interfaced between the BeO substrate and nickel plated steel header. The copper
slug is used to relieve mechanical stress between
the BeO substrate and the header and to provide
heat spreading resulting in lower thermal resistance.

ABSTRACT
Hybrid circuits offer many advantages over the
conventional discrete approach in switched-mode
converters. This paper deals with the construction
of the hybrid circuit and its thermal considerations. It examines the efficiency of a buck regulator employing a saturated transistor versus the
optimized darlington configuration. Also considered are the effects of reverse recovery of the
rectifier and base spreading resistance of the transistor on the efficiency of a switching regulator.
Finally, applications of standard hybrid circuits
for switched-mode converters are discussed.
I. INTRODUCTION

Recently a rapid increase in the use of hybrid
circuits in switched-mode power converters is
evident due to their inherent advantages. Some of
these advantages are: dc and high frequency
electrical isolation, ease in heat sinking multiple
power components within the single hybrid package, reduced stray parasitics, and finally, lower
overall cost compared to the discrete approach.
The hybrid circuit approach requires careful consideration of thermal design for maximum reliability and proper selection of silicon chips for best
electrical performance. This paper provides an
overview of the construction of a typical power
hybrid switching regulator circuit and its thermal
design considerations. Also considered are the
effects of the reverse recovery time of the rectifier and the base spreading resistance rBB' ,of the
power switching transistor on the efficiency of the
switching regulator. Applications and advantages
are also discussed for types of hybrid circuits
which are designed for low voltage applications
and other types designed for "off-line" switched
mode converters.

III. THERMAL CONSIDERATIONS
The design of the power hybrid circuit requires
careful consideration to optimize important
thermal requirements; thermal cycling, resistance,
and partitioning. To obtain maximum thermal
resistance, overlapping heat flow should be avoided.
As shown in Figure 2, heat flow from silicon chips
#2 and #3 overlaps, thus reducing the thermal
capability. No overlapping heat flow occurs from
chip #1.
Thermal resistance of the package can be calculated by the formu la:
t

RT = P"A
where t is the thickness of material through which
heat flows, P is the thermal resistivity of the material and A is the average area through which heat
flows.
In making a conservative calculation, it is assumed
that heat flux diverges at approximately a 45°
angle for all the materials except the copper slug
(62.5°) due to high conductivity.
The thermal resistance calcu lation of a hybrid
circuit is shown in Figure 2. The copper slug
between the BeO and header reduces the thermal
resistance of the package (by about .32°CIW) by
spreading the heat flow through a large area of
the steel header.
This calculation assumes that no voids are present
at the interfaces.

II. CONSTRUCTION
The power hybrid circuit PIC600 is the power output stage of a buck type switching regulator as
shown in Figure 1. It consists of a high speed
darlington-connected transistor pair, a commutating diode and two thick film biasing resistors.
These components are housed in a 4 pin electrically isolated TO-66 package.
The manufacturing procedure for these devices is
divided into two stages. First, a BeO substrate
is chosen because of its excellent thermal
conductivity, - - 70% as good as copper. The
interconnection paths, pad areas for the wire
bonds and the thick film resistors are screen
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL (617) 861-6540
TWX (710) 326-6509. TELEX 95-1064

IV. COMPONENT AND CIRCUIT SELECTION
Achieving maximum efficiency in a buck-type
regulator requires proper selection of electrical
characteristics of the transistor switch and catch
diode. Optimum efficiency can be obtained with a
15-76

PRINTED IN USA

U-82

APPLICATION NOTE

Q1

D1

Figure 1. Unitrode power hybrid circuit (PIC6001

Silicon
Chip #2

,

Silicon
Chip #3

,

D~~==~====~~========~'====~~~====~

F~~~=;e:============='~'~==========~'='==========;"~'~'==========(
,,
,
G/
,,
••
,
,,"
,
,
,

/

DEFINITION:

Material

t

Temp. Coef.

P
Rest.
°C-inNV

Thickness
in mils

RT* of
PIC625

4.2
14
6
23
16
23
11

.303
.182
.152
.8
.104
.8
.884

5
3
20
4
10
3
65

.214
.0718
.249
.187
.04614
.0836
1.043

10~oC

A - Silicon
B - Si Au Eut.
C - BeO
D - Solder
E - Copper
F - Solder
G - Steel

Total

*RT=P (~I

1.8954

Figure 2. Heat Flux Line in a Hybrid Circuit

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TWX (710) 326-6509. TELEX 95-1064

15·77

PRINTEO IN USA

II

APPLICATION NOTE

U-82

Schottky rectifier because it has lower forward
drop than most PN junction devices. The Schottky
rectifier is a majority carrier device and has zero
reverse recovery time. However, the Schottky's
high junction capacitance (10 times greater than
PN junction devices) produces the same effect as
the trr of PN junction devices. Junction capacitance does not change appreciably with temperature, so the effective reverse recovery time remains
the same with respect to temperature. Since
commercially available Schottky rectifiers have
only a 45V PIV rating, the absolute maximum
input voltage of the buck type regulator is limited
to only 45V.
Ultra fast PN junction devices are available with
the same effective reverse recovery as Schottky
rectifiers with a higher (up to 400V) PIV capability. The somewhat higher forward drop of the
PN junction devices does not degrade efficiency
at higher voltages.
The way in which a device recovers from forward conduction is also important. In high voltage
(>1000V) power supplies, it is desirable to have
abrupt reverse recovery time for optimum efficiency. In low voltage, high current power supplies
a soft reverse recovery rectifier is better suited
from the RFI viewpoint.

duration in the active region. This significantly
increases R F I and also increases the power dissipation in the transistor, and may cause second
breakdown.

Figure 3 shows the effect of a diode recovery time
on transistor power dissipation. The reverse recovery time of the catch diode requires the transistor to conduct higher peak current for a longer

2. The base spreading resistance, rBB',of the
device should be lower than the external
biasing resistor. This will provide low storage
time and fast fall time.

For reliable circuit operation, trr should be much
less than the current rise time of the transistor.
This ensures minimum current overshoot in the
transistor and also minimizes the amount of time
the transistor spends in the active region during
turn-on, resulting in lower power dissipation and
increased efficiency. However, to obtain maximum
efficiency, all switching times, (including current
rise time) should be as fast as possible. The rectifier
should be selected such that its trr is one third or
less of the current rise time of the transistor. In
switching regulator applications, it is also essential
that the storage and fall times be as low as possible.
When turn-off is achieved without the assistance of
182, it is important that the power output transistor have the following characteristics for best
performance:
1. Larger emitter periphery area with a triple
diffused or double diffused epitaxial construction to provide lowest effective collector series resistance to prevent forward
biasing of the collector-base junction.

3.0

~IC

2.6

'trr,

V>

~0

-{

I.
-1 tn

...J

c
0

~
~

.:t:
c...

+ ~

E
c:

c...

2.2

.:

5

I-

a
1;;

NOTE:
1.8

IRM _ trr

'in

1C-trj

c

i:'

I-

Figure 3b.

1.4

1.0
0

0.2

0.4

0.6

0.8

1.0

Diode trr
Transistor tri
Figure 3. Importance of Reverse Recovery Time of a Rectifier
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LEXINGTON. MA 02173. TEL. (617) 861-6540
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PRINTED IN USA

U-82

APPLICATION NOTE
Emitter

Base

Base
P

T
L

1

N
A
N+

Collector
_ pL
Ie X Rse drop - If:
Figure 4. Effect of rBB'. on Switching Times
and Dynamic Saturation

The resistor turn-on biasing method works satisfactory up to 10A for a low voltage device without
affecting the efficiency of the switching regulator.
Another advantage of the resistive turn-off circuit
is that it limits current crowding during turn-off
thus increasing the reliability of the circuit. Since
the driver transistor operates in a saturated mode,
the device should have a high gain-bandwidth
product to minimize overall storage time.
The hybrid circuit PIC600 consists of two transistors connected in a darlington configuration.

The internal biasing resistors of these transistors
are sufficient for fast turn-off without requiring
any 182.

The table shown in Figure 5 compares the efficiency of a saturated transistor (2N4150) versus
the hybrid darlington as the switching element in
a 50 kHz buck regulator. In each case, the output
device has the same size silicon chip.

Efficiency

Power Losses
(Watts)
Tj = 25°C

Pass
Transistor

~ = 0.5
Ein

Eo =
0.2

~

2N4150
(Saturated)

D.C. Losses ...............
Switchi ng Losses ..... ,-" ....
Drive Losses ..............
Diode Losses ..............

0.7
2.27
0.13
4.76

84.79%

81.66%

PIC625
(Darlington)

D.C. Losses ...............
Switchi ng Losses
..........
Drive Losses ..............
Diode Losses ..............

1.4
1.53
0.15
4.76

82.8%

81.69%

Conditions:

II

f = 50KHz
Eo = 5V
10 = 7A
Same size output device for both cases.
Figure 5. Comparison Between Saturated and Darlington
Pass Transistors in a Buck Type Switching Regulator

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APPLICATION NOTE

U-82

I n the saturated transistor approach, the transistor
is driven with a forced Beta of 5 during turn-on
and turn-off. However, in the darlington configuration, no turn-off base drive is employed. Typical
measured switching times and saturation voltages
are used to calculate losses.

V. APPLICATIONS
Different applications of power hybrid circuits are
discussed in this section.
Low Voltage Hybrid Circuits «100V)
Some applications of low voltage hybrid circuits
are: low and high current positive and negative
buck-type regulators, bidirectional motor driver
circuits, PWM push-pull and half bridge converters.
Each is discussed briefly as follows:

From the table in Figure 5, it is evident that the
hybrid darlington approach provides best results
in terms of efficiency when the ratio between the
output and input voltage is less than 0.25. In a
darlington configuration, if the output device is
kept out of saturation, then the rise, fall and storage times will be reduced compared with the
saturated transistor. Even at higher output/input
voltage ratios the loss in efficiency because of
higher VCE(SAT) is minimal compared to the
complexity and cost of a drive circuit required for
a saturated transistor.

a.

The plot in Figure 6 shows dc power dissipation
of a PIC625 at various duty cycles and temperatures. The efficiency of the regulator depends
heavily upon output voltage. Switching losses of
the PIC625 under conditions shown in Figure 6
are:
25°C - 0.875W
-55°C - 0.525W
125°C - 1.476W
13

....co .,'"
::l

~

L

~Cl

Eo =5V
80

10

70

~

IS1 = 30mA - Independent of Load and Temperature

I

9

>-

I

60

_55°C DC Losses

o~
~U

90

V

-/

0

., .

100

I

.E o = 25V

~

11

.90

I

Iff'
I
E IClency:

12

~->c:c
.20

Buck Type Switching Regulator
The schematic of the low cost, free running
buck switching regulator is shown in Figure 7. When the output voltage is lower than
the reference voltage, transistor 02 is off
and transistor 01 is on and provides the base
drive to the power hybrid circL'it PIC600.
The current in inductor L 1 increases linearly
and continues to charge the output capacitor
Co. When the output voltage exceeds the
zener voltage of diode D1 (plus some fixed
. fraction of VBE of transistor 02) transistor
02 turns on and removes base drive current
from transistor 01 and hybrid circuit
PIC600. Resistor R6 and capacitor C1 are
used to provide fast switching times. The
output voltage is trimmed with resistor R3.

8

25°C DC Losses

7

125°C DC Losses

"c:

Qj

'u

50

:::
UJ

0-

a..

40
Conditions:

-

Ein = 25V
10 = 7A
f = 25KHz

6

5

o

0.2

0.4

0.6

0.8

30
20
1.0

ton = Eo

T

Ein

Figure 6. Losses and Efficiency - PIC625
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APPLICATION NOTE

U-82

680[2
1.5K
33K
R2 = 180[2
R3 = 330[2
R4 = 220[2

01, 02 = 2N2222

"1= 80.3%

Load Regulation = .2%

Line Regulation (25

55V) = 2%

Figure 7. Low Cost Buck Regulator

The advantages of operating a buck regulator
at higher frequencies are:
Lower filter cost
Reduced size and weight
Improved transient response
Output ripple voltage less dependent
upon ESR of capacitor
Simpler EMI and RFI filtering

b. High Frequency Switching Regulator
Low voltage hybrid circuits can be operated
as high as 250 kHz due to their fast switching times. When these devices are used above
100 kHz, the storage time of the driver
transistor must be reduced. This can be done
by using a Baker clamp with resistor R 1 and
diode D1 as shown in Figure 8.
Ejn

PIC600

r--- ----

= 25V

o---.------.----~----~

r--_+~_+-----r~~--._~~o

I

I
I
I
I
IL __

Dl
lN914

.002 F

III

4.7K

InvCH~~~--------------4-------------~
4.7K

UC3524

°1

4.7K

2N2222

2.2K

18K

Figure 8. Operating a PWM Buck Regulator Above 100KHz
UNITRODE CORPORATION. 5 FORBES ROAD
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TWX (710) 326-6509. TELEX 95-1064

15-81

PRINTED IN USA

U;.82

APPLICATION NOTE
c)

Extending Output Current Capability up to
20A

regulators. In high current applications,
careful consideration should be given to the
drive circuit when the output device of the
PIC740 is operated in the saturated mode.
An increase of up to 5% in efficiency com:
pared to the darlington can be realized at
15A output current.

The output current capability of a buck
regulator can be extended by (1) paralleling
the output devices as shown in Figure 9 and
(2) the use of a high current device as shown
in Figure 10.

PWM Push-Pull Converter

The advantages of paralleling output devices
are that it allows the device to operate with
a relatively simple drive circuit and provides
simplicity of heat sinking. On the other
hand, proper current sharing during the ontime period and turn-off time is required.
The circuit shown in Figure 9 provides the
circuit technique to do just that. The only
drawback is that it requires a dead-band
period which must be greater than 0.1 L,
where L is the inductance value of the common mode choke L 1.

The circuit schematic shown in Figure 11 is a
width modulated push-pull converter. It utilizes
the Unitrode PIC636 power hybrid circuit.
Flux symmetry5 in the transformer core is provided by introducing an air gap in only one leg of
the EE core configuration. The voltage developed
across resistor R1 and capacitor C1 is proportional
to the flux density in the center leg of the E E
core. This developed voltage is fed back into the
control circuit at the output of the error amplifier. The output pulsewidth is corrected by the
developed vo Itage across C 1 and R1, provid i ng
flux symmetry in the power transformer.

Another method is to use high current
devices like the PIC740,. a power output
hybrid circuit. It consists of a 25A power
output transistor and Schottkv rectifier.
The device is housed in a 3 pin TO-3 package
with copper-core pins. The heat generation
is kept to a minimum by using the Schottky
rectifier and copper-core pins which allow
the use of the TO-3 package for 25A buck
type regulators. The limitation of these
devices is that the maximum input voltage
is only 40V. These devices can be used in
high efficiency, high current buck switching

Bidirectional Motor Drive Circuit
These power hybrid circuits can be employed to
drive inductive loads, such as DC motors, stepper
motors, and hammer drivers. Small inductors L 1
and L2 limit cross-conduction current during
switching times of the two hybrid circuits. The
excellent switching properties of the hybrid circuit allow the circuit to be operated with high
efficiency up to 100 kHz, improving transient
response of the circuit.
PIC625

r--------- ..I
768TI88/3E2A
Nl =N2=1 Turn

I
I

Ll
Nl.

Rl

•--

I

L- _ _ _ _ _ _ _ _

.JI

•

N2

R2

PIC625

,---------,

......

'---

IDrive

Figure 9. Current Sharing with a Common Mode Choke

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PRINTED IN USA

APPLICATION NOTE

U-82

r------- -

PIC740

r-----'

I
I

,

I

,
I
I

IL _______ J

82!"!

,

I

I
I

I
I
I

I _________ _ I
L

Figure 10. Simplified Schematic of 20A Buck Type
High Efficiency Switching Regulator

-E",

Figure 12. Bidirectional Motor Drive Circuit

100,uF
Ferroxcube
4.7K

4.7K

8200

782E272

8200

Nl "" lOT
N2=8T

'NV

UES2401

Eo = 5V

t.",
\
\
\

III

\
200
pF

1---+-0 Cr

E80-+---..,

t---'lNv--1-0 Rr
2.2K

>---If---1

N "'3CT

C3'= .OO5,u.F
Cs = .1p:F
Ca = .OO5j.1F

Figure 11. PWM Push·Pull Converter

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15·83

PRINTED IN USA

U-82

APPLICATION NOTE

VI. CONCLUSION
A wide variety of power hybrid circuits in standard
packages for switched-mode converter applications
have been developed by Unitrode. Power components were carefully selected for optimum
electrical performance. I n many instances these
hybrid circuits not only provide superior electrical
performance but also reduce the overall cost of the
power supply by reducing production labor and
repair cost.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
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PRINTED IN U.S.A.

U-83

APPLICATION NOTE
INCORPORATE ACTIVE INRUSH CURRENT LIMITING
TO IMPROVE RELIABILITY AND EFFICIENCY
OF POWER SUPPLIES
Active inrush-current limiters-unlike fuses and circuit breakersprevent dangerous situations instead of only reacting to them.
Apply limiting techniques, and you need not employ extra-hefty
rectifiers just to ensure rectifier survival during turn on.
40 nH

The input filter capacitor employed in many
power-supply designs creates a potential problemhigh inrush current. Fortunately, though, adding a
few extra components can prevent inrush current
and its associated circuit damage.
How does the input capacitor cause such problems? I ntentionally chosen for high storage capacity and low equivalent series resistance (ESR), it
behaves like a nearly perfect short circuit when the
supply first turns on. The resulting short-duration
peak inrush current can reach levels much greater
than the tolerable single-cycle ratings of the
supply's semiconductor rectifiers (thus destroying
them) and still not contain sufficient total energy
to open protective fuses or circuit breakers. Additionally, the supply's rapidly rising voltage and
current levels could cause dv/dt- or di/dt-sensitive
devices in neighboring hardware to fail or malfunction .

..,.
M

Output to
Regulator

I

0.1
Total

t
I

I
I
I

200

..,.

c

C
Bl
82
83
B4
B5
B6
87
88
89
El

** *

-:

*

*

,.

*

>I<

100

.c

:;

..,.

~

I

ECAP
TRANSIENT ANALYSIS

N

u

I

-;-

..,.

'"5

I

Figure 1. Based upon this generalized model, analysis
indicates the inrush-current problem's magnftude.
Chosen for its low ESR, the input filter capacitor rC,)
behaves like a nearly perfect short circuft when the
supply first turns on.

300

S

;

I

~ AC Line _ I - + - Power·Supply _ I
I
I
Input Circuit
I

0

*

0

-:

*

*

*

*

*

NIO,l), R =.1
N(1,2), L = 150E - 6
N(2,31, R =.1
N(3,0), C = 7000E -12
NI3Al, R = .001
N14,51, L = 40E - 9
NI5,6), R =.1
N(6,7), L = 10E - 6
NI7,0), C = 1000E - 6
(1),0,0,0, 160
TIME STEP = 100E - 6
FINISH TIME = 3E - 3
lERROR = 1
PRINT NV, CA
PLOT, ISCALED), CAI6)
BINARY, NV, CA

co

0
-100

I

I

co

« MI

U

,

UJ

a

~

00

I I I
000
000

"'..,.."
cicio

I I I

I I I I I I I I I

I I

00000000000000
00000000000000
...... OOO)O .... NM<;;;tLOC'O ...... QOO'lO
OOO....:~....:.....:...:......:.....:.....:...:.....:N

I I I I

I I

NMo::tLO

00
00
0)0

gggg
NNNN

:::
0

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173. TEL. (617) 861-6540
TWX (710) 326-6509. TELEX 95-1064

NM

I

3

Time (msec)

15-85

Figure 2. Peaks greater than 200A are
predicted by ECAP for the circuit model
shown in Figure "

PRINTED IN U S.A

II

APPLICATION NOTE

U-83

Turn on an analysis before
you turn on. a power supply
Computer analysis proves useful
To appreciate the inrush-current problem, consider an estimate of its magnitude before examining possible control techniques. Figure 1 depicts
a model of the ac-input and rectifier/filter sections
for a typical power supply. Although shown in a
straight off-the-power-mains configuration, the
model should be valid for any other design with
the same output-power capability.
An ECAP computer analysis performed for this
circuit assumed worst-case conditions: switch
closure at 160V (peak voltage). The results (Figure 3) of a typical design. The current pulse's
high level and short duration could generate severe,
localized hot spots in rectifier junctions or cause
false triggering of rate-sensitive devices elsewhere
in the circuit.
A standard approach to current limiting is depicted
in Figure 4a-a resistor. It's simple, reliable and
easy to design in, but efficient it isn't. At any current level, it dissipates power that would otherwise
be available to the load. The resistor does perform
a surge-current-limiting function, however.
(a)

50V

>50V_
DC
Out put
Vol tage
50V(OIV
Line

150

I
L ..
~

II'".

Volt age

2mS

"

t 1'\
OiV

Inr ush
Cur rent
BOA(OIV

~

./

V

V -----

-

\

'>50V

200mV

Figure 3. Measured inrush current appears close to that predicted in Figure 2_ This large current inrush could cause
junction hot spots and generate troublesome EM/,

Alternatively, a thermistor-controlled current
limiter (Figure 4b) alleviates the resistor's efficiency problems to some extent, but it aggravates
the dropout-recovery problem. The same cold-tohot resistance variation that permits turn-on
current limiting and high efficiency at low operating currents fails in dropout-recovery situations:
The thermistor's long thermal time constant
prohibits fast recovery.

-,---0+
117V AC

line
DC Output
AC Line
Vo

(b)

+

DC Output

AC Line
NOTES

Figure 4. Two common methods of inrush limiting
employ either a resistor (a) or a thermistor (b). But
if the resistor is /arge enough to effectively control
surge currents, it also significantly reduces efficiency.
The thermistor, while more efficient, offers little
protection during dropout recovery because of its
long thermal time constant.

UNITROOE CORPORATION. 5 FORBES ROAl.>
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R1: 3,5W
R2: 0.2, lOW
R3: 3k, 5W
R4: lk
R5: lk, 2W
RE!: 2k

C1: 1000llF
C2: 10llF

01 : L2R06254
02: UPT312

C3: 21lF
01: UZ4715
02: lN4245
03: UT680-4

Figure 5. SCR soft starting bypasses the current-limiting resistor (R,) only when the peak-detected voltage
across 0, drops below the zener breakdown, i.e.,
becomes almost fully charged through
when

C,

15-86

R,.

PRINTED IN U.S.A

APPLICATION NOTE

U-83

SCR spells efficiency
In view of resistor and thermistor drawbacks,
active soft-start designs offer a best-of-both-worlds
solution-effective inrush limiting, fast recovery
and high operating efficiency. This type of circuit,
shown in Figure 5, essentially incorporates a current-limiting resistor (R,) and a bypass switch
(Q,). At turn on, Q, is OF F, and the surge current (IS) develops a voltage across R,. This voltage
. is peak detected by D2 and stored in C2. When the
voltage exceeds D, 's zener breakdown-an event
that should occur almost instantaneously-Q2
turns on, disabling Q, 's gate-triggering network
(R3C3l. As the power supply's filter capacitor C,
charges up, the inrush peaks diminish until the
detected ISR1 voltage falls below Dfs zener
breakdown. Q2 then turns off, and the R3C3 network charges up and fires Q1, bypassing R,.
This circuit recovers rapidly enough to limit inrush currents that could occur as a result of even
short line dropouts. When the ac input voltage
goes to zero, the voltage across Q1 also goes to
zero, and Q, turns off. When the input voltage
reappears, Q2 keeps Qfs gate circuit OFF until
R1 has allowed C1 to become almost fully charged.
Figure 6 graphically depicts this design's inrushlimiting ability. Note how the ISR, voltage level
(upper trace) tracks the diminishing inrush-current
pulses (lower trace) for the first three cycles. At
the 17-msec point (slightly after the thi rd current
pulse), the peak detected voltage has dropped
below the zener breakdown point, and Q1 switches
on, bypassing R,. Then R2 limits inrush currents.

5mS,

50V
VC2

.... ... .... .... ... .... .. .... ...
,

50V IDiv

"'~

....

Inru sh
Cur rent

'l \

20A

OIV

....

-\:

~.\

II
"

~..

5V

·t

,

··l· ... .1\ ...
~

50TV
5 msec/Div

Figure 6. Inrush-current pulses of decreasing magnitude
(bottom trace) lower the SCR's hold-off voltage (upper
trace). After 17 msec, the SCR fires.

After determining your design's maximum continuous dc output current (/0) and inrush limit (IS),
you can select an appropriate SCR. (The major
SCR considerations are the peak repetitive blocking voltages and the maximum average plus peak
current levels.) Typical SCRs exhibit a gate-turnon voltage (VGT) of about O.6V; typical powersupply circuits exhibit a di/dt of about 1A/J1sectwo quantities required for calculating the values
of the other critical components:
R, =y2V AC/IS
R2 = PR2/102
Vz = ISR2
C3;;;'(2y2 VACVZ)/(R3VGTR,(di/dt)).

0,
TRIAC

rHiil+J-.

117V AC
line

III

+

R5
10k

C,
l000!,F

NOTES

0,: UZ471S
02: UT680-4
03: lN3612
0, : L7S08104
02: UPTA510
03: U2TA506
<4: 2N6027
T,: SPRAGUE l1Z2Ooo

RS
3.9k

lk
lN914

Figure 7. Phase controlling a triac limits inrush-current pulses' amplitude and duration. CycJe-by-cycle triggering handled by the PUT comparator - ensures instant recovery from line dropouts.

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U-83

APPLICATION NOTE

Switch out the limiting resistor
when the inrush is over
In the second equation, specify PR2 as the maximum power your requirements allow across R2.
Another effective Inrush-current limiter is the
phase-controlled triac design shown in Figure 7,
which operates by controlling the conduction time
of the current surges. Initially, the dc voltage (Vo)
across C1 builds up slowly because of R1's currentlimiting action. This dc voltage helps establish a
reference (via R 11 and zener diode D 1) for the
programmable unijunction transistor (PUT) 04 and
charges the phase-control timing capacitor C2 (via
R3). The PUT fires when its trigger point is
reached, turning the triac on. Thus, when Vo is
initially low, C2 charges slowly, and the triac
triggers on late in the half cycle. As Vo rises 01
turns on earlier in each cycle until nearly 100%
conduction is achieved.

r5~V

500mV
t
~

L ine
Voltage
I

-

I
Ir-'
~}'

E~

rL

I

50 YOiV

~

If

Ii

"

50V

uivalent
Inr ush
Cu rrent
~wA/Oiv

II

-, It
~

IJt.

~

~

""1. 06

Ou tput
Vo Itage
50 V/Oiv

\'.

10 mSEC/OIV

Figure 8. Triac conduction follows the gradually increasing
dc output voltage, decreasing the would·be inrush current.
When the output voltage reaches design level, the triac is
bypassing the current limiter nearly 100% of the time.

The remaining circuit components (D3, 02, 03,
etc) discharge timing capacitor C2 on each half
cycle, thereby assuring cycle-by-cycle current
limiting and fast recovery from dropouts. Figure 8
depicts the relationship between the ac input
voltage, the dc output voltage and the varying
conduction arrgte of the triac.

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APPLICATION NOTE

U-84

HYBRID CIRCUITS FOR OFF-LINE
SWITCHING POWER SUPPLIES

1.

Introduction
switching speeds. This optimization and the specially interdigitated structure result in lower rbb' and
uniform current injection. The PICBOO's rectifier
diode, a gold-doped epitaxial device, was chosen
for a typical reverse recovery time of 20nSec. This
is less than one-third of the transistor's current rise
time, to minimize transistor switching dissipation
and the generation of spikes and RFI. These
power hybrid circuits have the capability of switching up to BA at 400V and are designed for such
applications as high voltage buck type regulators,
bridge circuits, forward converters, deflection circuits and DC motor drives.

Hybrid circuits offer many advantages over the
conventional discrete approach for switching
power supplies, which has resulted in a rapid
increase in their use. These advantages include
ease in heat sinking multiple power components, while maintaining DC and high frequency isolation, reduced stray parasitics and
lower overall cost. This application note discusses one of the hybrid circuits built by Unitrode, its components and construction. and
two applications in detail, a Forward Converter
and a Half-Bridge Converter.
2.

"Off Line" Hybrid Circuits
2.1 Advantages
The Unitrode PICBOO series are "Off Line" hybrid circuits consisting of a high voltage power
transistor and a fast recovery diode mounted in
a 4 pin electrically isolated TO-66 package. The
following advantages can be derived by using
these power hybrid circuits:
a) Reduced EMI because of
1. Lower capacitance (10pF instead
of 1OOpF) between the case and active components compared to the
conventional TO-66 package, and
2. faster recovery time of the rectifier
(less than 40nSec).
3. the close proximity of the diode
and transistor chip; this also results in reduced ringing.
b) Heat sinking is simple because the package
is isolated; devices can be mounted on the
same heat sink without any precautions regarding isolation up to BOOV.
c) Components are matched for better performance.

Peak

Output
Type

PICBOO
PICB01

BA

PICB10
PIC811

8A

Fall Time
On-State
Input, Output
Voltage Current Voltage In I
(V) In I
Voltage
Polarity (n8)
(n8)
Package

350
400

Pos

350
400

Neg

200

200

15

5

(/I

4 PIN
TO-66
Iisolated)

200

200

15

5

fa

4 PIN
TO-66
Isolatptll

FIG. 1a - PIC800 Series Hybrid Circuits
TYPICAL INDUCTIVE SWITCHING TIMES
ts
tfv
tfl

Current Temp

1'8

nS

nS

25°C .9 80 100
100°C 1.0 190 140

CONDITIONS
Ie
~ 182

5 ~ 181

vcc=125V V(clamp)

350V

FIG. 1b - Unitrode Transistor Switching Times

2.3 Construction
The PICBOO series hybrid circuit is shown in
Figure 2. It combines a transistor and a commutating diode in a 4 pin electrically isolated TO-66
package.
Berillium oxide (BEO) is used for the substrate
because of its excellent thermal conductivity, 70%
as good as copper. The interconnection paths and
pad areas for the wire bonds are screen printed on
the BED substrate and fired in high temperature
furnaces. The semiconductor devices used in the
circuit are gold eutectic mounted, and aluminum
ultrasonic wire bonding is used for interconnections.

2.2 Components
In a high voltage "off line" hybrid circuit a large
portion of the power dissipation in the transistor is due to switching losses. The PICBOO series
hybrid circuits utilize a Unitrode high voltage transistor which has been computer optimized for fast

UNITRODE CORPORATION. 5 fORBES ROAD
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Current

15-89

PRINTED IN U.S.A.

APPLICATION NOTE

U-84
storage time, and an RC snubber limits the turn-off
power dissipation.

The BEO substrate is soldered to the nickel
plated steel header with a copper slug between
them. The copper slug relieves mechanical
stress between the BEO substrate and the
header, and provides heat spreading for lower
thermal resistance.
4

Plcaoo
Plcao1

Section 4 of this application note discusses the
design for an off-line half-bridge converter.
Other Unitrode application notes discuss the
design of buck, boost, flyback and H-bridge
type switching power supplies. (Application
Notes U68A, U80, U76 and Design Note DN-8).

3

TT

3.1 Description of Functional Circuits (see Fig.
3.3)

Current limiting is performed by measuring the
collector current of the power transistor 01 and
cutting off the base drive of 01 instantaneously.
Resistor R6 measures the emitter current in 01;
when the voltage developed across R6 becomes greater than VeE of 04 (0.7V), 04 turns on
and diverts 01 's base current.

,DRIVE

4

Plca10
Plca11

3

~TT

Soft start capacitor C11 is at zero volts when the
power supply is turned on, and CR26 keeps pin
9 at 0.7V more positive than the voltage on C11,
which is being charged slowly by R13.

DRIVE
OFF-LINE SWITCHING
REGULATOR OUTPUT CIRCUIT

PIC80()'811

The maximum pulse width is set by potentiometer R12 and CR24. Storage time of the power
transistor 01 is reduced by using proportional
base current drive and by providing large base
turn-off current, using transformer T3 and the
associated combination of diodes.

Figure 2. PIC800 hybrid circuit

3.

Off-Line Forward Converter
Application
This section discusses the design for an off-line
Forward PWM Converter, 50 watts total to multiple outputs. The deSign employs such features
as soft start, current limiting and protection
from output short circuits. The Forward Converter design uses one PIC811 hybrid circuit.
The power output transformer uses a demagnetizing winding to prevent core saturation,
as does the base drive transformer. The PWM
control circuit uses a UC3524 regulator chip. Proportional base drive reduces the power transistor

3.2 Specs:
Input - 95 to 135V, 60Hz
Outputs - 5V @ 3A, ±15V @ 1A
Regulation - Line: 0.2% for specified AC input.
- Load (20% to 100%): 5V output,
0.3%; ±15V output, 3%.

Ripple & Noise - 50mV peak to peak for ±15V
outputs, 1OOmV for 5V output.
Frequency - 30KHz
Efficiency - 78%
Features:
Short circuit protected
Soft Start

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PRINTED IN U.S.A.

... rc

):10

:E"'z
x~=i

F1

'S~~

VFB

L1

Sti c

""CI
""CI
+5V

"'z'"
~. 0
~3:0

----1

~,,~

"'°0
.~::o

):10

I R1
I
I

....... "

","''''
'-·0

~~z

",r'fI:"'V!

~"'''
g~o

-t
0
2
2
0
-t

T1

+
C1

I
I
I

"'-AI
oom

C
n

~rn

CR13
~i

~

CR15

=

• +15V

m

'"

"'AI

~~
0

....
U1
c.O
....

T4

r-cFiS:s---:

X CR7

,

0 -15V

VFB

T

I

RS
R9
R17

12
11

.Q13

R
15

C12

3.3

Schematic of Forward Converter

c

Co
-!:=o

iii

APPLICATION NOTE

U·84
3.4 Waveforms

200mNDiv

IC -

Driver Transistor 03

IS -

Power Transistor 01

_ _ _ L -_ _ _ _--Io

o

200mNDiv

IC-01

o

200mNDiv

o

130V/Div

VCE-01

o

100mNDiv

Current in Reset Winding of T1

Voltage Across 5V Secondary
Winding

O_~_---L~-~----

20V/Div

o

2NDiv

Current in 5V Secondary Winding

o

5pSec/div

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APPLICATION NOTE

U-84

3.S Power Transformer Design for Forward
Converter

From (1) and (3) use 120 turns.

Use an EC-41-3C8 EE core (Ferroxcube).
N (min) = Ein(high) X 108 =
p
2f 8 max Ae
2

140J2

x

25K

X

108

x 3.3K x

= 101 Turns (min)

1.21
(1 )

Current density in primary; design for
3000A/sq. in. (max)
(4)
0.84/3000A/sq. in. = .00028 sq. in. (min)
AWG*24 = .00032 sq. in.
Aw = 2.5(Ap x Np) x 2 = 2.S(.00032 x 120) x 2
= 0.17 sq. in. needed.
EC-41 has Aw = 0.21 sq. in. available on bobbin.
For the SV winding:

PoNtn
= 50W/165V = 084A
. =
'pro
D.F. x Eff.
0.45 x 0.8
.
For 15% current ramp in primary, I", = 0.15 x
0.84A = 0.14A

Np(max) = Ein(low) - VCE(SAT) =
90J2 - 1
N.
2(Eo + VF + VRS)
2(S + 0.7 + 0.1)
= 10.9 (max); use 9:1 Turns Ratio.

Lm = Ein(high)/(di/dt) = 135VJ2/(0.14/15p.S)

.

A1

S + . + .1

N.

X

= 84 turns (min)

3.6

_
Np
90J2 - 1
_.
.
.
-(max) - 2(1
07 0) - 4.3.1 (max), use 4.1

9)°5 _ (20 106)°5
2800

_ (Lm x 10

Np(mm) -

For the 1SV Winding:
(2)

=20mH

(3)

Parts List - SOW Forward Converter

IC1

- UC3524

01
02-3
04

- PIC811
- 2N2222
- UPT212

CR1-4
CR5-8
CR9
CR10
CR11
CR12
CR13-14
CR1S-16
CR17
CR18
CR19
CR20
CR21-23
CR24-26

-

TI-4
LI-3

- See Magnetics Sheet
- See Magnetics Sheet

F1

- 2A AGC

697-4
673-1
UES1101
UES1101
UZ707
UES2401
UES1304
UES1304
UES1306
UES1101
UES1304
UES1101
UES1101
1 N914

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 86J.6540
TWX (710) 326·6509 • TELEX 95-1064

15·93

C1
C2
C3
C4
CS
C7
C8
C9
C10
C11
C12

-

600p.F, 250VDC
5000p.F, 10VDC
1000p.F, 25VDC
1000p.F, 2SVDC
.001p.F, 1KV disc ceramic
47p.F, 3SV
SOOp.F, SOVDC
0.1p.F, SOV
.00Sp.F, SOV disc
100p.F, SOVDC
.01p.F, SOVDC disc

R1
R2
R3
R4
RS
R6
R7
R8
R9
R10
R11
R12
R13
R14
R1S
R16
R17

-

27K, 2W
2:2K, 2W
27
27
47
O.S
33
20K pot
4.7K
4.7K
4.7K
1K pot
100K
3.9K
22K
100
330

PRINTED IN U.S.A.

APPLICATION NOTE

U-84

3.7 Magnetic Components
T1 - Power Transformer
Core: EC-41-3C8 Core & Bobbin, Ferroxcube
120T
*30 AWG

120T
*24AWG
(PRI)

13T
30T
*20AWG *20AWG

Proportional base drive and a special base drive
circuit are used to reduce transistor storage
time.
4.1 Circuit Description (see Fig. 4.3
The half-bridge type circuit was chosen for the
100 watt converter design, along with the
PIC810 hybrid and fairly simple circuits. The
half bridge circuit keeps the transistors' collector voltage, including inductive spikes, from
exceeding the DC bus voltage, and the series
capacitor C6 prevents core saturation. The base
drive circuit is designed to minimize transistor
storage time by essentially shorting the primary
of the driver transformer T1 during transistor
dead-time, providing a low impedance path for
162 of the transistors. This is accomplished by
turning on both 021 and 022 during the deadband period. In addition proportional base drive
is used.

30T
*20AWG

(RESET CORE) (5V SEC) (15V SEC) (-15VSEC)

T2 - Base Drive Transformer
Core: 376 B/U 250-3C8 (UI Core), Ferroxcube
60T
*27 AWG

60T
*30AWG

*24AWG

(PRI)

(RESET CORE)

(SEC)

15T

T3 - Current Transformer
Core: 846T250-3C8, Ferroxcube
6T
*18AWG

6T
*18 AWG

24T
*24 AWG

(PRI)

(SEC)

(SEC)

T4 - Isolation Transformer
Stancor PPC-2, 115V/15V, 0.1A

Soft start capacitor C26 is at zero volts when the
power supply is turned on, and CR24 keeps pin
9 at 0.7V more positive than the voltage on
C26,which is being charged slowly by R27. The
maximum pulse width is set by potentiometer R26
and CR23.

L 1 - 5V Output Inductor
Core: 1F31-3C8, Ferroxcube
40T
*18 AWG

6 mil air gap in each of the 2 legs.
L1 = 600l'H

L2 & L3, 15V Output Inductor
Core: 1F31-3C8, Ferroxcube L3
74T
*18 AWG

4.

4.2 Specs for Half-Bridge Converter
Input - 95V to 135V, 60Hz
Outputs - 5V @ 15A, ±15V @ 1A
Regulation - Line: 0.3% for specified AC input
Load (20% to 100%): 5V output,
0.5%; ±15V, 2%.
Ripple and Noise - 5V output, 80mV peak to
peak.
- ±15V output, 20mV peak
to peak.
Frequency - 30KHz
Efficiency - 80%

= L2 = 1.3mH

6 mil air gap in each of the legs ..

Off-Line Half-Bridge Converter
Application
This portion of the application note discusses
the design for an off-line half-bridge PWM converter supplying 100 watts to multiple outputs.
Features include soft start and current limiting,
and the PWM control circuit uses the i UC3524
chip.

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

15-94

PRINTED IN U.S.A.

-:Ire

>
"'0

=<"'z

xX --<
-z",
~G)o
0-<"

"'0

F1

~o'"

kLzo

~~~

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.... 0
~.:::!::a

colD
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.oil

.:r.

CR1&2

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•

R6 C11

~

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~[
.~

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:'+

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R1

C2;;~

R2

-

T2

'I

02

C6

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1I:
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C21

_J

-

C27 :
R34

=

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CR2alkR27lr~~
,~

R26 CR24

~I
C25 '4+
C26-{

L

2

9

~~

~

14
5

Ii)

6 ::>

1-'"
+

'f'C8

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•

r-.2~---- __ -J

+15V

t"14!

.':l

-15V

:

I

To pin 5
I if used ...

7 7:
1

5V

C9
- -:

CR26

G

-~ JI

I-

+

II

I , ::" ,
12

CR29-32

m

I

1";~~2

I

R31

,..

'----

____________~__~______~i~-:-=-~.:---~-~-~·-J'

R23

CR9
,--,

•

~---~-------t---------------~---~~~~4~~+i---1
~

o
z
z
o-t

I

I~C!i4JCR3 __ J

"'-

i
"0

-10

>

-20

-30

\

Junction temperature

800

400

Since both IL and VF are temperature sensitive
parameters, we can express IL and VFas functions of
temperature in the above equation for thermal stability and obtain:

1200

time (ns)

Figure 11 b - Voltage Across Rectifier With Snubber Network
100 - O.lpF

4.4 Thermal Stability Considerations
The reverse leakage current of a Schottky rectifier is
much higher than PN junction devices because of
the Schottky's lower barrier height. The magnitude
of this leakage current doubles approximately every
ten degrees Centigrade. Since it is temperature sensitive, the thermal stability of the system should be
checked over to avoid thermal runaway. In a PWM
switched-mode converter (i.e. push-pull, halfbridge, etc.) the rectifier can be operated at 50%
duty cycle in the reverse blocking state while the
remaining 50% of the time it will operate in the forward conduction mode under worst case conditions. However, forward drop is also a temperature
sensitive parameter and this should also be considered when thermal stability calculations are made.
The criteria for thermal stability is defined as: "the
rate of change in power pumped into a device with
respect to temperature (dPm/dt) should be less than
the rate of change in power removed (in the applicable thermal environment) in the form of heat from
the device with respect to temperature (dPout/dt)".

[I

(T-ton )

(TJ-TAII

-·V·
I ·0 2
T
R

.

Y

I

+

< TJ-T A (412)
-

.

Leakage current at room temperature

Where: 10
VFo

RaJA

=

Forward voltage drop at room temperature

x

Temperature coefficient for forward
voltage at operating current

y

Temperature difference for which
leakage current doubles.

Differentiating the above equation:

. -.1.
Y

ton
1
·-·x<-T
RaJ -A

In 2 + IF

[4.13)

(TJ - TAl

In a switched-mode converter, the power dissipated
in the device and the power removed can be
expressed by:

Defining 10 • 2
Y
as the critical current, IR(cn'l
at maximum temperature, and solving for IR(culi we
obtain:

(4.11 )

[4.14)

Design Example
In the practical example previously discussed, the
maximum reverse voltage across the rectifiers is
30V. Each rectifier is mounted on a heat sink. The

Applied reverse voltage
Leakage current at temperature
Rectifier on-time

UN ITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

15-109

PRINTED IN U.S.A.

APPLICATION NOTE

U·85

thermal resistance of the heat sink is 1°C/W. The
Schottky rectifier, SD241, has a maximum thermal
resistance of 1.40 C/W from case to junction. Its
reverse leakage current doubles every ten degrees
Centigrade, while the forward voltage at IF=20A
decreased by 1mV/o C as the junction temperature
increases. The designer desires to limit the maximum operating junction temperature of the
Schottky rectifier to 125 0 C under worst case
conditions
Calculate the maximum reverse leakage current
allowed for these rectifiers at 1250 C to prevent
thermal instability
Calculation:
RaJA

(ReH

+

RaJ-cl

0

C/W

In switched-mode converter applications, current
sharing can be accomplished by using separate
windings for each rectifier and by matching forward
drops. The series resistance of each winding acts as
a current ballasting impedance.

10 C/W + 1.40 C/W

2.40 C/W
ton

T

16.611S

toft

16.611S

= ton + toft

33.2IJs

5. Guidelines for Selecting the SChottky
Rectifier in Pulse Width Mode (PWM)
Switched-Mode Converter
Applications

Using equation 4.14:
IRlcrot) :5 10" C x

[

3) Smaller chip size will have less chance of
voids in the chip bond to the package, thus,
the reliability of the system is improved.
The disadvantage of paralleling rectifiers is that
some kind of circuit technique is required to share
the current among the paralleled devices. Ifthe current is not shared equally, the junction temperature
of the device which conducts the higher current will
increase. The forward voltage of the device will
decrease due to its increased temperature and will
conduct an even larger share of the load current. If
adequate matching is not provided, this regenerative process continues; and if not checked in time,
the junction temperature will exceed the maximum
rating and the device will be damaged.

(33.2 x 10-6 )/(2.4°C/W) - (20A) (16.6 x 10-6) (-1 x 1O-3 V)]
.693(33.2 x 10-6 sec - 16.6 x 10-6) (30V)
:5 410mA

From the SD241 specification, the maximum reverse leakage current at 1250 C is 1OOmA; therefore
this system will be thermally stable.

The minimum required dc blocking voltage of the
Schottky rectifier and its maximum power dissipation can be calculated for different types of switchedmode power supplies summarized in Tables II and
III. After calculating the maximum power dissipation, the designer can determine the required thermal resistance of the rectifier and the heat sink
using the equation:
RaH

+

Where:
4.5 Paralleling Rectifiers
When the output current required is greater than the
maximum rated forward current of commercial rectifiers, it becomes necessary to parallel the devices.
In some instances, it may be preferable to parallel
devices even when a single device of hi9.her current
ratings is available. The advantages of paralleling
these devices are:
1) Heat is easier to remove when com pared to a
single device with a higher current rating
because the heat is spread between two or
more devices.
2) The transformer is easier to wind since the
wire size is smaller, using a separate winding
for each rectifier.
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

15-110

R

eJC -

Tjmax - TAmax
Pmax

[5.1]

ReJc

Thermal resistance of rectifier

RaH

Thermal resistance of heat sink

TJmax

Maximum operating junction temperature of device

TAmax = Maximum ambient temperature
When calculations are made for maximum power
dissipation in a rectifier, the voltage drop VF and
leakage current IR should be taken at the maximum
operating junction temperature.
During start up and for step changes in the output
load current, the voltage across the rectifier should
be limited to below its maximum dc blocking voltage
to avoid failures due to transient voltage across the
Schottky.

PRINTED IN U.S.A.

-Ire

>
"V

TABLE 1 - GUIDELINES FOR DETERMINING THE RATING OF A RECTIFIER IN A PWM SWITCHED-MODE
CONVERTER

~~2

X-=i

-::::;Z:;o

,..."V

~~g

-0",

~!!n
'7'3: 0

TYPES OF SWITCHING REGULATORS

gjl>!g

OUTPUT VOLTAGE

~2°

STEADY STATE - POWER DISSIPATION
IN RECTIFIERS

MINIMUM DC BLOCKING
VOLTAGE REQUIRED

BUCK REGULATOR

r·o

=p~

'1'-

. -"

~"''''
5::;;0
",III

"'m
';"en

l21!l
0,.
c

~'" ~I
~r~o,----.L
~ teo :~;:1Ti:
-

2
2

Power dissipation In Diode 0, due to forward
conduction:

"'-12

Eo=E;nX~

Eo"EinX~

For Diode

Ein max

Power dissipation due to leakage current, IR'

P01R ~ 'R x Eo·

--.j \-toff.j

o

Emmax - Eo

POl F :: lOmax x VF

~

o

.~"

-I .... ,.
rrt W ::::!.

n

°1,

-t
m

1.2 x Ein max

'R@Ein max

Ton

PUSH-PULL CONVERTER (50'10 Duly Cycle)

E~

.....
'of
.....
.....

.....

}

N,

Power dISsipation in Rectifier 0, or 02 due to
forward conduction:

lOmax

D1

N2

'..cI;---, e>-- I

I

~

I

oo_~ru

--;;'-;-1 n
o_::'...L.J L

I

Eo = Eo + VF

Eo

= Ein

For 0, or 02:

POl F or P02F :: IOmax2 x VF

N2

x'N'1

Power dissipation due to leakage current, 'R:

2.4 (Ein max ) x

N2
N1

E,n
P01A or P02R = 2.0 x Ein max x

N2

N'1 x

'A

02

Power dissipation due to forward conduction
in Rectifier 0 1:

PWM FORWARD CONVERTER
~EIn

1

N2

'f
:~
t· ·~ ~,.
0,

N,

",

'om~x

'0' ~
0---

I

°max

'~2~-

E~

N,

=Eo+VF+lomaxxR
P01F '" lOmax x VF

N3
Eo :: Einmin N, + N2

N1 + N2

ForD,:

Power dissipation in Rectifier 02:

1.2

Where'

P

02F

,;:::. I

0max

x V

~ - ~.
N1 +N2

F ~

I

Power dissipation due to reverse leakage
current:

N3

x N2

For 02:

1.2 Ein max x N3

dary Wmding When
01 IS conducting

Ein max

E lnmax ]
E.
.
mmln

Eo = de Output Voltage
Eo '" Output of Secon-

x

P01R

= Einmin

N3
• IR • N1 + N2

N3
P02R = IR x N, ... N2 x Einmin

·N·1~

c:
Co
U1

iii

.... re:
~"'Z

X -x....

>
."
"V"
.....

TABLE II

-Z;o
~Ci)o

S(jg
~20

~~O

m>-!g
g~o

TYPES OF SWITCHING
REGULATORS

STEADY STATE - POWER DISSIPATION IN
RECTIFIERS

OUTPUT VOLTAGE

~!:::~

ITI""::!
roo
", .... Z
x",
ro

.. "

MINIMUM DC
BLOCKING
VOLTAGE
REQUIRED

o-4

V::-UI

~
O~O

IT1

~.::::!A:f
"'Ol
",
';"'en

~;o

l>g
c

~

o

:2
:2

PWM PUSH-PULL CONVERTER

.

c=;

T-

Power diSSipation

I ~~IC~_~"~
'0,

L

Ri

Jomal'

E~ '"

In

Rectifier 0lar D 2 due to forward conduction

POl For P02F '" lOmax x (V; @ lOmax) x :rnm-.!O
Eo .. VF + lOmax x A £

lOmax

N,

Eo" Emmrn x""N1

.lomax (VF @

JO~ax )

'--2--'

For 01 or

24 (Eo

Emmal( - Emmm
<

+-

°

2-

VF .. R

Emmax
x lOmax) x Emmrn

For Push-Pull and full
Bridge
Power diSSipation due to leakage current
I

Om"

......
<.11
,:.
......
I\)

~,LTL~-

PO IR or P02R " IA(E lnmm ) (N 1!N 2 1

~ df~

NOTE IA@2(E o

+

VF

+-

10

max

x All x :mmax
rn mln

PWM FULL BRIDGE
CONVERTER

PWM HALF-BRIDGE CONVERTER

I

Eo :- Eo

<..

, ".'. [ '

~
'~ 00:~1LT~~

+-

VF x Jomax x A

tnfln x~
N,

R
SAME AS ABOVE

SAME AS ABOVE

Eo = E

For Half~Bridg8

-:,LTt
o

c::
Co
U1

U-85

APPLICATION NOTE
6

Conclusion

Complete design guidelines for Schottky rectifiers
used in switched-mode converters have been provided. The Schottky, when compared to a fast PN
junction rectifier, offers the advantages of lower
forward voltage and a faster reverse recovery time
which is independent of temperature. Efficiency is
improved at least 3 to 5% when Schottky rectifiers
are used in place of PN junction devices for power
rectification in switched-mode converters. Schottky
rectifiers are available with a maximum reverse
blocking voltage up to only 50 to 60V. Thus, applications of Schottky devices are limited to low output
voltages (+5V) in PWM switched-mode converters
(except for buck type and 50% duty cycle converters). When the rectifier requires voltage blocking
capability of greater than 60V, fast PN junction devices like UES800 series rectifier offers the optimum
choice without sacrificing speed and forward voltage.

UNITRODE CORPORATION· 5 FORBES ROAD
l.EXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

15·113

PRINTED IN U.S.A.

-ire
:;;"'2
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SA

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12A1

12A

TO-220

16A 2

16A

TO-220
PLASTIC

TO-220
PLASTIC

TO-220
PLASTIC

PLASTIC

TO-220
PLASTIC

TO-220
PLASTIC

(2-LEAD)

(2-LEAD)

(3-LEAD)

(2-LEAD)

(3-LEAD)

(2-LEAD)

USD620
55@6A
150A

USD720

USD620C
65@ 12A
150A

USD820
45 (i'il 12A
200A

USD720C
65@16A
200A

USD920

55@SA
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25A

00-4
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m

30A

00-4
STUD

USD735
55@BA
200A

USD635C
65@12A
150A

USD835
45 (IV 12A
200A

USD735C

TYPE
VF
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US0640
55@6A
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USD740
55@BA
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USD640C
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USD84Q
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USD740C
65@16A
200A

USD94Q

lN6096

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86 (w 78A
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USD645

USD745

USD645C

USDB45

USD745C

USD945

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100CA

USD335C
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USD320
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USD435
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US0935

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USD535
6 (aJ 60A
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1N6098
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USD445
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US0345C
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U5D545
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6@60A
100UA

CENTER-TAP 6A PER LEG
CENTER-TAP, BA PER LEG
CENTER-TAP. 30A PER LEG
V R AT 25<'"C IS 45V, VA AT 150"C 1535V

.

'"z

;;:
0

z
en

»

c:

Co

(J'I

APPLICATION NOTE

U·87

500W, 200kHz OFF-LINE POWER SUPPLY
USING POWER MOSFETS
Introduction
The power supply design discussed in this application note uses a fairly common, straight-forward
circuit. It is the judicious selection of the components used, and careful layout of the circuit, which
gives it its performance. As the operating frequency
of switching power supplies continues to increase
above 100kHz, attention to high frequency considerations is a necessity. A knowledge of component
and circuit parasitics is essential as well as an
understanding of RLC circuits and transient
response, particularly LC resonant tank circuits.
Because of the resonance of parasitic circuit and
component inductance and capacitance at these
high frequencies, the use of damping and snubbing
techniques becomes increasingly important.
In the off-line converters some of these high frequency problem areas are aggravated by the large
turns ratio of the step-down transformer, particularly for low voltage (5V) outputs. The use of
Schottky rectifiers with their 5 to 10 times larger
junction capacitance than PN junction rectifiers
can cause additional difficulty with the design. At
200kHz these problems are manageable by careful
component selection and circuit layout.

Specifications
Input - 115V or 220V ± 15%, 50Hz or 60Hz
Output - 5V @ 100A
Regulation - Line: 0.4%
Load: 0.5% (10% to 100% load)
Ripple: 100mV peak to peak
Frequency - 200kHz
Efficiency - 75% minimum

T 1 . This provides the fast, high current turn-on and
turn-off pulses needed for the MOSFET gates. In
addition, the two ends of the primary winding are
shorted to ground during deadtime, which prevents
accidental turn-on of an output transistor by transients. Note that the current supplied by the
UC3525A output drops to a small value when the
gate capacitance has been charged or discharged
to the desired gate voltage. Damping resistors R3
and R4, with series blocking capacitors C16 and C17,
minimize ringing of the MOSFET gate capacitance
with the inductance of T1 and lead inductance; particularly during deadtime. In this design, where the
gates are driven directly from the control chip via
the gate drive transformer at 200kHz, it is necessary
to use a small heat sink for the control chip. A
Thermalloy #6007 is sufficient.
The output transformer uses a small E-E core, Ferroxcube EC52-3C8, operated at 1000 Gauss peak
to reduce core loss at 200kHz. The primary is
wound in 2 layers, 7 turns per layer, 2 #16 AWG
wires in parallel. The secondaries are wound
between the 2 primary layers to reduce leakage
inductance, and are made of copper strap 10 mils
thick by 0.8 inches wide, one turn on each side of
the centertap.
Ringing of the primary winding, at a frequency of
approximately 4MHz due to leakage inductance
resonating with the output capacitance of the
MOSFETS, is controlled by damping resistor R18
and blocking capacitor C4.

Circuit Description
The schematic and parts list of a 50 OW switching
power supply are shown in Figure 9. The description
of the circuit is as follows. The input rectifier bridge
is arranged for connection either to the 117 or the
220V AC line. The circuit uses a pair of Unitrode
UFN441 power MOSFETs in a half-bridge configuration. The MOSFET gates are driven directly from a
UC3525A control chip output through step down
and isolation transformer T1. The UC3525A output
terminals (pins 11 and 14) provide active pull-up
and pull-down (dual source/ sink) for the primary of

15·115

Reverse voltage across Schottky rectifiers CR1 to
CR4, due to ringing (at approximately 20MHz) of the
LC circuit comprised of the Schottky rectifier capacitance with the leakage inductance of the transformer (transformed to the secondary by the square
of the turns ratio), is controlled by damping resistors
R7 to R10 with blocking capacitors C10 to C13.
The output filter capacitor Cs is comprised of three
5J1F, 100V polypropylene capacitors in parallel.
These are TRW type 35, with an ESR of 12 milliohms each. The inductor is made with a Ferroxcube
IF30-3C8 core, wound with 4 turns of 5 #12 AWG
wires in parallel.
Current limiting is done with current transformer T 3

APPLICATION NOTE

U-87

in the return lead of the transformer primary. The
signal is rectified, threshold sensed and adjusted,
and is fed to the shutdown terminal pin 10 of the
UC3525A control chip.

Performance
A curve of efficiency versus power output is shown
in Figure 8. Note that the efficiency decreases for
increasing power output. This is primarily due to
resistive losses, other than the Schottky rectifier
losses, such as the Ros (on) losses of the MOSFETs
and the copper losses of the output transformer and
filter inductor. The switching losses of the
MOSFETs are low; the measured current rise and
fall times were 10ns and 20ns, respectively.
When compared to a 25kHz switcher, the transient
response of this circuit can be improved by a factor
over 8 times since the LC output filter resonant
frequency can be increased by this amount. There
is an additional improvement factor, since polypropylene capaCitors rather than electrolytic are
used for 200kHz operation. The value of capacitance can be reduced considerably, because of the
improved ESR. However, in order to realize the
improved frequency response, careful attention to
control circuit layout and shielding is important to
minimize parasitic capacitance and inductance.
The use of a ground plane is a necessity.
A dramatic reduction of the size of several major
components is evident when comparing this
200kHz, 50 OW switcher to a 25kHz switcher. The
power transformer, output filter inductor, and output
filter capaCitor are about half the volume, and the
drive circuits for the MOSFETs are considerably
smaller than the drive circuits for bipolars at 25kHz.
The auxilliary power supply is half the size. The
parts count is less, primarily due to the reduced
parts count of the drive circuits.

Design Considerations
The choice of operating frequency and the decision
to use MOSFETs or bipolars depends upon a
number of factors, including the required power
output level, size, weight, cost, etc., and a rapidly
changing technology which includes circuit topology, new components, control chips and high frequency techniques.
There are some major advantages that are obtai nable by using MOSFETs in place of bipolars, other
than those associated with higher operating frequency. One of these is in the area of potential gate
drive circuits. In the power supply described in this
application note, the power MOSFET gates are
driven directly by the control chip through a small

15-116

step down isolation transformer.
The feedback loop compensation is comprised of
an RC network at the error amplifier of the
UC3525A. The resonant frequency of the LC output
filter is approximately 40kHz. Closing the loop at OdB
at 100kHz, this network adds two zeros (phase lead)
at approximately one half the LC resonant frequency, and gives a 40 0 phase margin up to
100kHz.

Do's and Don'ts of High Frequency
Switchers
For the control chip circuit, the use of a ground
plane construction is recommended. A double
sided PC board, with one side used for the ground
plane, is preferable. If a single sided board is used,
use as much copper area as possible for the ground
plane. Keep traces fairly wide to reduce inductance.
The judicious use of a few wire jumps to reduce
trace length is helpful.
Power MOSFET gate drive circuits do not have to
supply a continuous large current drive. MOSFET
gates do require fairly large, fast current pulses to
change the gate voltage rapidly because of the
composite gate capacitance, including the Miller
effect capaCitance. This means that the gate drive
circuit and transformer should be designed to minimize lead inductance by reducing loop areas to a
minimum. Remember that each inch of wire adds
about 20 nanohenries of inductance. Using fairly
large diameter wires twisted together helps, as well
as designing the layout to reduce lead lengths to a
minimum.
The use of copper strapping in place of round wire is
also helpful in reducing inductance. Use two closely
spaced parallel strips if possible. Circuit by-passing
with small high frequency capaCitors is important,
especially around the control chip circuit area. Bypassing the fairly large electrolytic input energy
storage capacitors is helpful, if the by-pass capacitors are located physically at the junction of the
MOSFETs and the primary of the output transformer, as shown on the schematic.

Bibliography
1. R. Mammano, R. Adair, "A Second-Generation
IC Switch Mode Controller Optimized For High
Frequency Power MOSFET Drive", Unitrode
Application Note U-89.
2. Raoji Patel, "Power Schottky Rectifiers in a
Switching Regulator", Unitrode Application
Note U-85.
Continued

APPLICATION NOTE

U·S7

3. Raoji Patel, "Operating Buck Regulator Above
100kHz", Unitrode Application Note U-80.

MOSFET Gate Drive Circuitry," Unitrode
Switching Power Supply Design Seminar Manual,
Spring 1982.

4. Raoji Patel, "Design Considerations for Power

WAVEFORMS AT 10

= 100A

100V/DIV

5VIDIV

10V/DIV
2A/DIV

500ns/DIV

500ns/DIV
UPPER - VGS OF Q,
LOWER - VOUT OF PIN 14, UC3525A

UPPER - VDS OF Q,
LOWER - 10 OF O.

FIGURE 1. GATE DRIVE

FIGURE 2. MOSFET SWITCHING

100V/DIV
100V/OIV

2A/OIV

2A/DIV

100ns/OlV

100ns/DIV
UPPER - Vos OF 0,
LOWER - 10 OF O.

UPPER - VDS OF O.
LOWER - ID OF 0,

RGURE 3. RISE TIME

FIGURE 4. FALL TIME

15-117

APPLICATION NOTE

U-S7

5V/DiV

100V/DIV

100mV/DIV
5A/DIV

500ns/DIV

ljJs/DIV

UPPER - VPRIMARY
LOWER - I.R'''ARY

UPPER - XFMR SEC VOLTAGE
LOWER - OUTPUT RIPPLE

AGURE 5, TRANSFORMER PRIMARY WAVEFORMS

AGURE 6, TRANSFORMER SECONDARY VOLTAGE,
AND OUTPUT RIPPLE

100

80

SOOmV/DIV

#.

200mV/DIV

~

I

r-

60

15

13

§

40

25A/DIV
20

o
o
UPPER - 5V OUTPUT'
MIDDLE - ERROR'AMPUFIER OUTPUT
LOWER - LOAD CURRENT

100

200

300,

POWER OUTPUT - WATIS

SOI'S/DIV

400

•

FIGURE 8, EFFICIENCY VS POWER OUTPUT

FIGURE 7, TRANSIENT RESPONSE,
2SA LOAD CHANGE (LARGE SIGNAL CHANGE)

15-118

500

R,

>
~

C"

~

B
6
z

z

T,

~

R,

'"

C,

•

~OOA

220VAC

1l5VAC

C,

R,

.....
'!'
.....

.....
<0

j
c:

•

FIGURE 9. SCHEMATIC OF 500W. 200kHz HALF-BRIDGE POWER SUPPLY

~

APPLICATION NOTE

U·S7

Parts List
U1

UC3525A

01, O2
CR1-CR4
CR5-CRB
CR9-CR12
CR13, CR14
CR15
C1, C2
C3
C4
C5
Cs
C7
CB
C9
C10-C13
C14, C15
C1s, C17
C1B
C19
C20
C21

UFN441
USD545
680-4 (Unitrode)
673-1 (Unitrode)
UES1003
TVS31 0
600J,.LF,250V
1J,.LF,400V
500pF,1kV
3x5J,.LF, 100V (polypropy.)
500J,.LF,50V
1000pF,50V
1J,.LF,50V
50pF,50V
0.02J,.LF,50V
1pF,200V
.002, J,.LF, 50V
0.2, J,.LF, 50V
0.1, J,.LF, 50V
300pF, 50V
220pF,50V

R1, R2
R3, R4
R5
Rs
R7 -R10
R11

33K,2W
470
100, %W
4.70
3.90,1/2W
10K

R12
R13, R14
R15
R1S
R17
R1B
R19
R20
R21
R22

15·120

3.3K
2200
10K
10K
510
500,4W
100
27K
24K
33K

T1

Core, Ferrox 486T250-3C8
Pri, 14T #22AWG
Sec (2) 7T #22AWG

T2

Core, Ferrox EC52-3C8
Pri, 14T, 2 layers, 2 #16 AWG
in parallel.
Sec, (2), each 2T, C.T., copper
strap 0.01" x 0.8" see text.

T3

Core, Ferrox 486T250-3C8
Pri,1T
Sec, 20 turns CT #22AWG

T4

220/117V, 25V, 0.15A

L1

Core, Ferrox IF30-3C8, 4 turns,
5 #12AWG in parallel.

APPLICATION NOTE

U-88

DESIGN CONSIDERATIONS FOR
POWER MOSFET GATE DRIVE CIRCUITRY
1_ Introduction
The power MOSFET promises exciting performance advantages over the more conventional bipolar transistor_ However, much attention must be given to gate drive
techniques to take full advantage of MOSFET characteristics. This application note
develops simple, high performance gate drive circuits.
This application note also provides design engineers with a basic understanding of the
relationship between parasitic elements and switching times. In addition, a circuit is
developed which controls the switching time of the power MOSFET to reduce rectifier
reverse recovery spikes; thus, reducing RFI and switching loss.
2. Features
The power MOSFET is becoming more and more popular in many applications due to
its inherent features, such as:
2.a. Extremely Fast Switching Characteristics.
A power MOSFET is capable of switching rapidly because it is a majority carrier
device. The speed at which it can switch depends upon the rate at which gate charge
is supplied or removed by the gate driving source. In a practical application the
MOSFET can be made to switch in less than 10 nanoseconds. This feature allows
operation at higher frequencies than with bipolar devices, resulting in improved
electrical performance (transient response), reduced size and cost of the magnetic
components, and decreased weight of the overall system.
Other advantages derived from fast switching times are:
•

The losses in the snubber circuit, if employed, are minimized.

•

Switching times are independent of load and temperature variation. The
variation in the frequency spectrum of conducted RFI is minimized.

•

The cross-conduction problem in a switched-mode converter (half bridge,
full bridge, push-pull) is reduced because power MOSFETs have no storage
time.

•

The problem of core saturation due to assymmetrical volt-seconds in circuits
using a transformer is minimized because the major cause of this effect, differences in storage time is negligible for MOSFETs.

•

If a voltage feed-forward control is being used, the nonlinearity introduced
by the storage time of the switching device is eliminated, thus reducing the
gain requirement of the error amplifier.

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U·88

APPLICATION NOTE

2.b. High Gate Input Impedance.
The gate input impedance is a high resistance shunted by a capacitance. At high
frequencies the capacitance completely dominates. This fact allows the design of a
simple and efficient gate drive circuit.
2.c. No Forward or Reverse Biased Second Breakdown.
Because of the positive temperature co-efficient of channel resistance, power
MOSFETs do not have forward or reverse biased second breakdown characteristics
like bipolar devices. Thus power MOSFETs improve the overall reliability of systems.
Snubber networks for turn-off load lin6 shaping may be smaller and often eliminated.
This reduces circuit complexity and cost. The voltage spikes due to stray inductance
can be limited by simply controlling the switching times in many applications.
2.d. Integral Diode.
There is a built-in diode across the source to drain. The reverse recovery time of the
diode depends upon the drain to source breakdown voltage. Low voltage (lOOV)
devices have reverse recovery times as low as 200 nanoseconds, while high voltage
devices (400-5 OOV) have recovery times of about 600-700 nanoseconds. When a high
speed diode is not required, the internal diode can be used effectively for free wheeling voltage damping. However, long recovery times might hinder the performance of
the circuit in some applications, so this effect must be considered.
2.e. Current Sharing Capability
Since the channel resistance of a power MOSFET has a positive temperature coefficient many devices can be paralleled with much less special design attention than
with bipolar transistors. The power output capability can, thus, be extended.
The Undesirable Features of the Power MOSFET are:
2.f. Temperature Dependence of Saturation Resistance.
The saturation resistance (RDS(on» increases with temperature. It doubles approximately every 110°C. Thus, power dissipation will increase as the junction temperature increases. Consideration of the thermal stability of the system is required if a
major part of the power losses occur in the on-state mode.
(In a bipolar transistor "off line" converter, most of the power losses are due to
switching. The switching losses increase with temperature, usually doubling every
100°C. In this respect, power MOSFETs will be more thermally stable than bipolar
transistors, as switching the times of a power MOSFET do not change with
temperature.)

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APPLICATION NOTE

U·88

2.g. Silicon Chip Area.
The silicon chip area of a power MOSFET is about 50% larger than an equivalent
bipolar transistor. This has some impact on the cost of the device.
3. Construction
The cross section of an N-channel vertical DMOS (double-diffused MOS) is shown in
Figure 3.1. Sections of this structure affecting gate drive are discussed in the following sections.

Silicon Dioxide
Si0 2

Silicon Poly crystal
Gate

Source

Metallization

Ion Implanted
P and N+ Regions

N-Epi

N+

N+

N+ Substrate

Drain
Figure 3.1 The Power MOSFET Physical Structure

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APPLICATION NOTE

U·88

4. Parasitic Elements and Switching
Since MOSFETs are majority carrier devices, they are theoretically capable of switching in picoseconds. In practical devices, however, parasitic elements adversely affect
switching capability. MOSFET parasitic capacitances are shown in Figure 4.1.

Case, Drain

Source

Figure 4.1 Power MOSFET Parasitic Capacitance

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APPLICATION NOTE

U·88

The thickness and area of Si0 2 dielectric material between gate and source determines
the value of the gate capacitance. In the off-state, the total gate-to-source capacitance
is composed of a) capacitance C3 between the gate and the heavily doped N+ source
region, b) capacitance C2 between the gate and the moderately doped P region and
c) capacitance C I between the gate and the source metallization on the top of the
gate (C I is much less than capacitances C3 and C2 and can be neglected). The gate
capacitance is practically independent of gate voltage, as shown in Figure 4.2.

3000
UFN44C1

I,

J

f= 1 MHz
Vgs =0

20

25

hgs =C1 +C2 +C3

2500

2000
t

~

1500

8c

.;u

It 1000

t!

............

500

'--.

Cds
Cdg

o

o

5

10

30

V DS - Volts
Figure 4.2 Capacitance Vs. Drain to Source Voltage

The Miller effect capacitance between drain and gate consists of a series combination
of a space charge capacitance Cdg due to a depletion layer in the N-region and the
dielectric capacitance C4 between the N-region and the gate, as shown in Figure 3.1.
The capacitance Cdg is a function of drain voltage (as shown in Figure 4.2), while
dielectric capacitance C4 is independent of the voltage. These drain capacitances
effectively increase the input gate capacitance during switching transitions.
The capacitance Cds between drain and source is a depletion capacitance and does
not have a major effect on the switching behaviour of the device. It can be neglected
in the switching analysis.

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U-88

APPLICATION NOTE

The tum-on and tum-off characteristics of a power MOSFET are shown in Figure 4.3_

VFinal

/

_V9S

1

td~On)
.t
t3
r

+

-Vds

o~er-1

Drive
Period

Turn-on Time

_ V ds

Turn-off Time
Figure 4_3 Power MOSFET Switching Waveforms

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APPLICATION NOTE

U·88

C(pl)

I

('~
I

················1·12:SK·
C4

C4
Cdg
Cdg(lolol) = C
Cro
4+ dg

A

" ,~
r,---.,I

----+-::=-+--~--~

I~

7.5K

C,I

1~4
I
__ ~J

Cgs + Cdg(IOIII) L

Cgo

5.0K

•.....

2.5K

'\:::.._~~

••

• ::

.....................................................................
Ciss

Cgs

Cdg(lotal)

-1.5

-1.0

-.5

0

.5

1.0

1.5

Vdg(volts)
Figure 4.4A C VI Vdg - Static Case Expanded

10
9

Vds(volls)

VgS(volts)

4.3V

1

CI.S(pl)
SOK
40K

(1-

dVdS)
dVgs

III

30K
20K

Ciss(elfective)

t(n.)

CI•• (elfecllve)= C g • + Cdg (1- dVdS)
(Iolal) dV gs

.Figure 4.48 C VI t - Dynamic Case

Figure 4.4 Input Capacitance and Conclltlona at Tum-on

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APPLICATION NOTE

U·88

4.a. Turn-on Delay Time - td(on)
The effective gate input capacitance during this period is a parallel combination of
capacitor C I' C2 and C3. While the gate voltage builds up toward the gate threshold
voltage, the drain voltage remains the same.
4.b. Rise Time - tr
When the drain voltage starts to drop, during current rise time the effective gate
capacitance increases significantly due to the Miller effect capacitance (C dg), which
absorbs nearly all the gate drive current. The rise time of the drain current is Inversely
proportional to the gate drive current supplied, and transition rise time can be controlled accurately by controlling the gate current, a feature particularly useful to
reduce current overshoot due to rectifier reverse recovery. Since the magnitude of the
gate and drain capacitances are determined by the structure of the device, they are
very consistent from device to device and are temperature independent. This allows
optimization of snubber network designs.
4.c. Dynamic Saturation - t3
During this period, which follows the rise time; the drain voltage drops below the gate
voltage. An inversion layer is established underneath the entire gate in the N- drain
region. The gate capacitance is equal to the dielectric capacitance and is independent
of voltage bias. At this pOint, the total drain to gate capacitance changes abruptly to
a very high value. This can be seen in the gate voltage waveform of Figure 4.3 where
effective gate capacitance is in the order of 50,000 pf and no further increase in gate
voltage is noticed.
4.d. Overdrive Period
The input gate capacitance is approximately twice the value expected from Figure 4.2
during over-drive conditions, as can be seen by comparing the slopes of the gate
voltage during the period td(on) and overdrive (see Figure 4.3). This is because Cgs is
measured with a greater voltage across the drain to source terminals than is present
during this period.

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APPLICATION NOTE

U·88

Typical ClrcuR

Wllvefonn.
VDs. VeE = VIN

I OVERSHOOT

TRANSISTOR

---I--+lt"
Figure 5.1A Transl.tor Current During Turn-On

t"

Losses vs - - Ratio
1,1

2.8

V

2.6

2.4
P(tn + In)
P(t.,)

2.2

/

2.0

1.6

1

1.4

1.0
- 0

/

/

/

1.8

1.2

/

Example: VeE

/

= 100V, Ie = lA,

t'rI

= 100nS

I"

IpK

PAY

E

(ns)

(AI

(W/Cycle)

(P,I)

0

6

300

30

30

7.8

390

51

50

9

450

68

100

12

600

12

,.,/

L
0.2

0.4

0.6

0.8

1.0

III

Figure 5.1 B Effect of ReverH Recovery on Lo....

Figure 5.1 Importance of Current RI.. Time In a Transistor
and Reverse Recovery In a Rectifier

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APPLICATION NOTE

o

U·88

40

80

120

160

o

40

(nS)

Figure 5.2A Schottky Rectifier (SD41)

80

120

160

(nS)

Figure 5.28

un....'.' PH JuncUon (UES701)

Figure 5.2 Reverse Recovery of Fa' RectlfI....

5. Drive Circuit Considerations
The power MOSFET is a charge driven device, and the switching times can be controlled by the external circuit rather than by the device itself. In a buck switching
regulator application (or similarly behaving circuit), the rise time of a power MOSFET
may be controlled to prevent excessive current spikes and power dissipation due to
rectifier reverse recovery. Current spikes also produce unwanted ringing and RFI
in the circuit. The relationship between reverse recovery time, current rise time and
power dissipation in the power MOSFET is shown in Figure 5.l. The fastest available
power PN junction rectifiers have recovery times on the order of 20 ns. To minimize
the recovery current spikes, the current rise time of the power MOSFET should be
made at least 3 times slower than the reverse recovery of the rectifier. Even though
Schottky rectifiers are majority carrier devices, they have about the same effective
reverse recovery time as very fast PN junction diodes due to high junction capacitance, as shown in Figure 5.2. In transformer coupled switching regulators, leakage
inductance will reduce the large current spikes to some extent depending upon the
transformer design.

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APPLICATION NOTE

U·88

During turn-off time, voltage spikes will occur as a result of energy stored in the
stray inductance of the drain circuit during the preceding on-time. The magnitude of
these spikes directly depends upon the speed with which the device is turned off and
upon lead inductance in the drain circuit. A snubber network in the drain may be
required to limit these voltage spikes. The turn-off power dissipation can be optimized with a fast turn-off time along with the use of a snubber circuit.
The drive circuit described in this section allows control of the rise time in a power
MOSFET during turn-on while providing fast tum-off.
5.a. Low Cost Gate Drive Circuit
A low cost power MOSFET gate drive circuit with isolation for off-line applications
is shown in Figure 5.3. The circuit provides a controlled rate of increasing drain current to minimize spikes due to the reverse recovery of the output rectifier. The
rise time of the power MOSFET is controlled by supplying a linearly increasing gate
voltage. The relatively large capacitor C I (as compared with Cgs ) is placed in parallel
with the gate and source to minimize the effect of variations or Cdg on the switching
characteristic of the device. C I also prevents spurious oscillations due to high frequency voltage feedback from Cdg' C I is charged with a constant current from the
drive circuit, providing linearly increasing voltage at the' gate of power MOSFET,
Q2' The rise time of the MOSFET depends on the rate at which capacitor CI charges.
The drive circuit described provides a rise time of around 70 ns and current fall time
of about 40 ns.
B+

RL

UES1301

11--"-4---4
50n

Figure 5.3 Low Cost Gate Drive Circuit with Isolation

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APPLICATION NOTE

U·88

The operation of the circuit can be described as follows: When drive transistor Q I
turns on, the current transformer provides constant drive current into the secondary
circuit. The constant drive current is determined by resistor R I and will charge
capacitor C I linearly through diode D2. Zener diode· DI limits Q2 gate to source
voltage. When the voltage across the secondary winding drops due to primary time
constant Lp/RI, the zener diode D2 becomes reverse biased and prevents the discharge of capacitor CI' Whiie transistor Ql is on, the energy will be stored in the
transformer core. When transistor QI subsequently turns off, current will flow in
the secondary side due to energy stored in the core of transformer T l' The amount
of energy stored must be greater than that stored in the capacitor Cl in order to
ensure complete discharge of the capacitor.
Capacitor Cl discharges through zener diode D 2. Diode Dl prevents any negative
voltage swing across gate to source and provides a current path for discharge of the
secondary inductance.

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u·ss

APPLICATION NOTE

The circuit shown in Figure 5.4 improves the fall time compared to the previous
circuit. The operation of the circuit is the same as that described above except during
turn off. During 01 turn-off, capacitor CI discharges through winding N3 and diode
D2. The discharge current will be 4 times greater than in the previous circuit because
the current now flows through only one quarter of the winding, while the ampereturns remain unchanged. Diode D I prevents current flow from the winding N2
during turn off.
L
300l-lH

Co
01

100l-lf

UZ8710

1811 PLOO3B7
N3= 2.5
10V

°11

UZ8710
°2

1000

01

°1

III

Figure 5.4 Fall Time Enhancement Drive Circuit

5.b. Pulse Drive Circuit
In some applications, as in a line driver, it is essential that power MOSFETs switch
rapidly both during turn-on and turn-off. The drive circuit shown in Figure 5.5
provides these fast switching times while conserving drive power from the low voltage
supply. The circuit is capable of switching a device with a high (2500 pi) gate input
capacitance in 12 to 15 nanoseconds. During off time, low impedance is maintained
across gate to source. This prevenfs turn-on of the power MOSFET due to dv/dt or
noise at the drain terminal. The drive circuit can be operated from 1KHz to 100 KHZ
without any changes. For low cost, it utilizes an inexpensive ferrite bead as a current
transformer.

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APPLICATION NOTE

U·88

The drive circuit operates from a 25V power supply. The transformer is driven by a
Unitrode UCl524A pulse width modulator control chip. With 03 off when the output transistor of the UCl524A turns on, the voltage VCl is impressed across the
primary of current transformer T l' The energy stored in the capacitor Cl is, thereby,
transferred to the T 1 secondary. Secondary current flows through capacitor C2 ,
winding N2 , diode D3 , diode D4 , small signal MOSFET 02 and back to capacitor
C2. The secondary current discharges the initially charged capacitor C2. MOSFET
02 turns off when the voltage across C2 drops below the gate threshold voltage of
02' The negative voltage across the gate to source of 02 is clamped to a safe value
by diode Dl' Now the secondary current starts to flow into the input gate capacitance of the output power MOSFET 03' When the gate voltage reaches the gate
threshold voltage, 03 will begin to turn on. The gate voltage will continue to rise
until the current transformer saturates and the current in the secondary ceases. The
voltage across winding N2 drops to zero. Charge stored in the gate capacitance of
03 is maintained because diode D4 is back biased by the resulting gate voltage. The
rate at which the gate capacitance discharges depends upon the leakage current of
D4 and the IDSS of 02'
For 1.0 fJ.A total leakage current, it will require about 25 milliseconds to discharge
a device with a 2500 pf input capacitance.
When the output transistor of the UCl524A turns off, the magnetizing energy stored
in the current transformer is transferred by current flow to the secondary circuit.
The current will flow in the loop which consists of diode D2, winding N2, and capacitance C2 in parallel with the input capacitance of 02' When the voltage on the gate
reaches the threshold voltage, 02 turns on and discharges the gate capacitance of
03 with a low impedance, resulting in fast turn-off.
Capacitor C2 remains charged because it has no discharge path. This keeps 02 on and
03 is held off. This prevents turn-on of 03 due to any dv/dt present at the drain
terminal of 03' which is particularly useful in PWM half-bridge switching regulator
circuits.

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A

APPLICATION NOTE

U·88

+25V 470n
Stack Pole Ferrite
Bead #571552
Current
Transformer

C,

·...'1

T,3:3

V Z =6.B

~N' I~D3------"'~

UC '524A

--

Figure 5.5 Pulse Drive Circuit

The power drawn from the drive circuit power supply is minimized by using this
current pulse drive circuit, especially when operating at a low frequency for fast
switching applications.
The switching times of a Unitrode power MOSFET are compared with those of a
competitive device in Figure 5.6. The circuit described above was used. The devices
have the same voltage and current ratings and comparable RDS(on). The Unitrode
UFN44CI switches faster, due to its 20 percent lower gate-to-drain and gate-to-source
capacitances, than the competitive device.

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U·88

APPLICATION NOTE

Unitrode UFN44C1

Unitrode UFN44C1

- Turn-on Time -

Competitive Device

- Turn-off Time -

Competitive Device

Figure 5.6 Switching Times of Unitrode UFN44C1 Power MOSFET vs
Competitive Device with Same Voltage and Current Ratings

Conclusion

The use of power MOSFETs in switching regulated power supplies is advantageous
due to their fast switching capability with simple drive circuits. The overall system
cost can be further reduced by operating these power MOSFETs at a high frequency.
The reliability of the switching power supply is improved due to lack of forward or
reverse bias second breakdown in the device and due to reduced parts count.

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U-89

A SECOND-GENERATION IC SWITCH MODE CONTROLLER OPTIMIZED
FOR HIGH FREQUENCY POWER MOSFET DRIVE
Introduction
Since the introduction of the SG1524 in 1976, integrated
circuit controllers have played an important role in the
rapid development and exploitation of high-efficiency
switching power supply technology. The 1524 soon
became an industry standard and was widely secondsourced (it is available from Unitrode as the UC1524).
Although this device, as well as the MC3420 and TL494
which followed it, contained all the basic control elements required for switching regulator design; practical
power supplies still required other functions which had
to be implemented with additional external discrete circuitry.
An additional development within the semiconductor
industry was the introduction of practical power FETs
which offered the potential of higher efficiencies at
higher speeds with resultant lower overall system costs.
In order to be able to take full advantage of the speed

Y'N 15

capabilities of power FETs, it was necessary to provide
high peak currents to the gate during turn-on and turnoff to quickly charge and discharge the gate capacitances of 800 to 2000pF present in higher current units.
The development of a second-generation regulating
PWM IC, the UC1525A, and its complimentary output
version, the UC1527A, was a direct result of the desire
to add more power supply elements to the controllC, as
well as to optimize the interfacing of high current power
devices.

Integrating More Power Supply Functions
Having achieved the greatest level of acceptance
among users of first generation control chips, the 1524
became the starting point for expanding IC controller
capabilities. This early device, shown in Figure 1, contains a fixed-voltage reference source, an oscillator
which generates both a clock signal and a linear ramp

AEFFERENCE
'~----~------------------------------~------~16
REGULATOR

VREF

+5V
OSCOUT

+5V TO ALL
INTERNAL
CIRCUITRY

3

+5V

F\

FLIP
FLOP

6

c,.

OSCILLATOR

(Ramp)

+5V

COMP 9
+5V

+5V
INV,INPUT 1
N.I.INPUT 2

1K

GROUND~

\,------------------------------1.'0 SHUTDOWN

Figure 1. The UC1524 Regulating PWM Block Diagram.
This design was the first complete IC control
chip for switch mode power supplies.
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U.89

APPLICATION NOTE
waveform, a PWM comparator, and a toggle flip-flop with
output gating to switch the PWM signal alternately
between the two outputs.
With this circuitry already defined, a two pronged development effort was initiated: 1) to add additional features
required by most power supply designs and 2) to
impro~e the utility of features already included within the
1524. The resultant block diagram for the UC1525A is
shown in Figure 2. Two general comments should be
made relative to the overall block diagram. First, in optimizing the output stage for bi-directional, low impedance
switching, commitments had to be made as to whether
the output should be high or low during the active, or ON
state. Since this is application defined there are needs
for both output states, so both were developed with the

UC1525A device defined by an output configuration
which is high during the ON pulse, and the UC 1527A
configured to remain high during the OFF state. This difference is implemented by a mask option which eliminates inverter 0 4 (see Figure 3) for the UC1527A. In all
other respects, the 1525A and 1527A are identical and
any description of the 1525A characteristics apply
equally to the 1527A. Second, a major difference
between this new controller and the earlier 1524 is the
deletion of the current limit amplifier. There are so many
system considerations in providing current control that it
is preferable to leave this as a user-defined external
option and allocate the package pins to other, more universally requested functions. Current limiting possibilities are discussed further under shutdown options.

r----------,

SYNC

3)-----~

OSCILLATOR
OUTPUT
4

R,-

DISCHARGE

6}---__I
} -_ _--I0SCILLATORI--~---I

:L~

r-+-+-~~~

NOR

7

UC1525A

OUTPUT STAGE

-i

I
INV.INPUT

1

N.I.INPUT

2

SOFT-START 8 } - - - - - - - 4 1 - - . . . l
50",A

SHUTDOWN

101---~r-.~----4""'L

L

UC1527A

OUTPUT STAGE

.J

Figure 2. The UC1525A family represents a "second
generation" of IC controllers.

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U-89

"Totem-Pole" Output Stage
One of the most significant benefits in using the
UC1525A is its output configuration. For the first time it
has been recognized in an IC controller that it is more
difficult to turn a power switch off than turn it on. With the
UC1525A, a high-current, fast transition, low impedance
drive is provided for both turn-on arid turn-off of an external power transistor or FET. The circuit schematic of one
of the two output stages contained within the device is
shown in Figure 3. This is a two-state output, either 0 8 is
on, forming a low saturation voltage pull-down, or 0 7 is
on, pulling the output up to Vc. Note that Vc is a separate
terminal from the VIN supply to the rest of the device.
This offers the benefits of potentially operating the output drive from a lower supply than the rest of the circuit
for power efficiencies, decoupling of drive transients
from more sensitive circuits, and a third terminal for
extracting a drive signal. Note that even though Vc can
be set either higher or lower than VIN' the output cannot
rise higher than approximately 1'/2 volts below VIN'

the control power by a 0.1 mfd capacitor from Vc to
ground but it should not, otherwise, cause a problem
unless very high frequency operation is contemplated
where it will contribute to overall device power dissipation, by becoming a significant portion of the total duty
cycle.

OUTPUT A.
10V/DIV

CURRENT
INTOVc '
SOOmA/DIV

HORIZONTAL

= SOOns/DIV

Figure 4. Current "spiking" on the Vc terminal caused by
conduction overlap between source and sink is
minimized by high-speed design techniques.

4

~
UJ

PWM

OSC

~
~
a
>
z
a
;:::

F/F

V,N = 20V
TA = 25°C

I

3

~

2

.,---V~

..:

Q:

:J

Figure 3. One of two power output stages contained
within the UC1525A which conduct alternately
due to the internal flip-flop.

During the transition between states, there is a slight
conduction overlap between source and sink which
results in a pulse of current flowing from Vc to ground.
However, due to the high-speed design configuration of
this stage, this current spike lasts for only about 100ns.
A typical current waveform at Vc is shown in Figure 4.
This transient will normally be decoupled from the rest of

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~

~

o

,.............. ~ i--"
.01

V

~ ~URCE

~

~

SAT. Vc

VOH

A

i'--i sT.t vOlI
INK

.02 .03 .04.05.07 .10

.2

.3.4.5

.7

1A

OUTPUT CURRENT. SOURCE OR SINK (Al

Figure 5. The ouput saturation characteristics of the
UC1525A provide both high drive current and
low hold-off voltage.

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APPLICATION NOTE

U·89

The output saturation characteristics of this stage are
shown in Figure 5. The source transistor,07' is a straight
forward Darlington and its saturation voltage remains
between 1 and 2V out to 400mA under the assumption
that VIN .2 Vcc. The sink transistor, 0 8, however, has a
non-uniform characteristic which needs explanation. At
low sink currents, the 1mA current source through 0 5
insures a very low saturation voltage at the output. As
load current increases .past 50mA, 0 8 begins to come
out of saturation for lack of base drive but only up to
about 2V. Here diode O2 becomes forward biased shunting a portion of the load current through 0 5 to boost the
base current into 0 8 • With this circuit,the sink transistor
can both support high peak discharge currents from a
capacitive load, as well as insure the low' static hold-off
voltage required for bipolar transistors.

v" -

Vc - 20V

OUTPUT A. 5V/OIV

a, BASE CURRENT
200mAlDIV

HORIZONTAL

A typical output configuration for a push-pull, bipolar
transistor power stage is shown in Figure 6. With a
steady state base drive current from the UC1525A of
100mA, this stage should be able to switch 1 to 5A of
transformer primary current, depending upon the choice
of transistors. The sum of R, and R2 determine the maximum steady state output current of the UC1525A while
their ratio defines the voltage across C2 which, at turn
off, becomes the reverse VBe for 0 ,. With the values
given, the output current and voltage waveforms are

= SOOnsiDIV

.

Figure 7. Base current waveforms (Figure 6 circuit) show
the enhanced turn-on and turn-off current possible with the UC1525A.
.

shown in Figure 7 for a one microsecond pulse. If power
FETs are used for the output switches as shown in Figure 8, the interfacing circuitry can become even simpler
with only a small series gate resistor potentially required
to damp spurious oscillations within the FET.
+SUPP~~--~------------~

+SUPPLYLr__

~

______________________

~

20V

c,
O.1

1

T,

II
12

RETURN

RETURN,

Figure 6. A typical push-pull converter power stage
using external bipolar power transistor
switches.

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Figure 8. Replacing bipolar transistors with POWER
MOSFETs provides even greater simplicity
due to the low driving impedances of the
UC1525A in each transition.

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APPLICATION NOTE

U-89

Push-pull direct transformer drive is also particularly
advantageous with UC1525A as shown in Figure 9. A
version of this configuration is required for isolation
when the control circuit is referenced to the secondary
side of an off-line power system, and to provide level
shifting of drive signals for 1/2 bridge and full bridge
switching. The configuration of Figure 9 has a couple of
important advantages. First, by connecting the drive
transformer primary directly between the outputs of the
UC1525A, no center-tap is needed and the full primary
is driven with opposite polarities. Secondly, between
each output pulse, both outputs are pulled to ground
which effectively shorts the two ends of the primary
winding together coupling a low-impedance turn-off signal to the switching transistors.

+ SUPPLY

TO

~--- OUTPUT
FILTER

13

UC1525A

12
RETURN

O-------'-------J

Figure 10. A single-ended, ground-referenced power
stage for a flyback or boost regulator.
+ SUPPLY

u---...--------_------.
Controlling Power Supply Start-Up
0,

c,

C2

•
RETURN

L)---+---------------'

Figure 9. The UC1525A is ideally suited for driving a lowpower base drive transformer and eliminates
the need for a primary centertap.

A useful single-ended configuration, typical of buck regulators, is shown in Figure 10. Here the UC1525A outputs are grounded and the PWM signal is taken from the
Vc terminal which switches close to ground during each
clock period as the internal source transistors are alternately sequenced.

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Although the advantages of the UC1525A's output stage
will often be reason enough for its selection, there are
several other important and useful features incorporated
within this product. One problem previously overlooked
in PWM circuits is keeping the output under control as
the supply voltage is turned on and off. Undefined
states, particularly the possibility of turning on an output
before the oscillator is running, can be quite awkward, if
not catastrophic. To prevent this, the UC1525A has
incorporated an under-voltage lockout circuit which
effectively clamps the outputs to the off state with as little as 21/2V of supply voltage which is less than the voltage required to turn the outputs on. This clamp is maintained until the supply reaches approximately 8V
insuring that all the remaining UC1525A Circuitry is fully
operational prior to enabling the outputs. The clamp
reactivates when the supply is lowered to approximately
7.5V. There is about SOOmV of hysteresis built in to eliminate clamp oscillation at threshold.
Another important aspect of power sequencing is
restraining the outputs from immediately commanding a
100% duty cycle when they are activated. This is
accomplished by a slow turn on (soft-start) which is
defined by an internal SO/LA current source in conjunction with an externally applied capacitor. The details of
this power sequencing system are shown in Figure 11.

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APPLICATION NOTE

U-89

Power Supply Shutdown

0 3 and 0 4 are the output gates normally driven by the
oscillator through O2 to provide output blanking between
pulses. (One of these transistors is shown as O2 in Figure 3.) At low supply voltages, O2 conducts with base
drive from the 20p.A current source. O2 provides three
functions. First, current through R4 activates the output
gates with minimum voltage drop. Second, current
through As activates the shutdown transistor 0 5 holding
the soft-start capacitor, Css , discharged. Third, R2 provides a small bucking voltage across R3 for hysteresis at
the switch point.

An important part of any PWM controller is the ability to
shut it down at any time for a variety of reasons, including system sequencing requirements or fault protection.
Several options are available to the user of the
UC1525A, which require an understanding of the capability of the shutdown terminal, pin 10. Referring to Figure 11, the base of 0 5 is turned on by a signal which is
clamped to approximately 1.4V by the action of 0, and
the VBE of gates 0 3 and 0 4- This holds the outputs off
and keeps C ss discharged by 0 5 which, with R9,
becomes a 100p.A net current sink.

When the input voltage becomes high enough to provide a little more than one volt at the base of 0" that
transistor turns on. This turns off O2, activating the outputs and allowing Css to begin to charge from the internal 50p.A current source. The time to reach approximately 50% duty cycle will be

If, during normal operation, pin 10 is pulled high, three
things happen. First, the outputs are turned off within
200ns through 0,. Second, the PWM latch is set by 0 6
so that even if the signal at pin 10 were to disappear, the
outputs would stay off for the duration of that period,
being reset by the next clock pulse. Third, 0 5 is activated commencing a 100p.A discharge of Css . However,
if the activation pulse on pin 10 has a duration shorter
than V3 of the clock period, the voltage on Css will
remain high and soft-start will not be reactivated. Naturally, a fixed signal on pin 10 will eventually discharge
Css , recycling soft-start. Thus, the shutdown pin provides both sequencing capability as well as a convenient
port for protective functions, including pulse-by-pulse
current limiting.

2 volts )
t = ( --Css
50p.A

Regulating PWM Performance
Improvements
The UC1525A also offers significant performance and
application improvements in almost all of the additional
basic functions of a PWM over those obtainable with
earlier devices_ A general description of these features
is outlined below:
Reference Regulator: The output voltage of this regulator
is internally trimmed to 5.1 V ± 1% during manufacture,
eliminating the need for adjusting potentiomenters in
most applications.

'0

Error Amplifier: The UC1525A uses the same basic
transconductance amplifier as the UC1524 with an
important difference: it is powered by VIN rather than
VREF • Now the input common-mode range includes VREF
eliminating the need for a voltage divider with its attendant tolerances. An additional feature relative to the
error amplifier is that the shutdown circuitry feeds into a
separate input to the PWM comparator allowing pulse
termination without affecting the output of the error
amplifier which might have a slow recovery, depending
upon the external compensation network selected. An

SHUTDOWN

R,

TOPWM

LATCH

Figure 11. The internal power turn-on, soft-start, and
shutdown circuitry of the UC1525A.

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APPLICATION NOTE

U-89

important benefit of a transconductance amplifier is the
ease with which its current mode output can be over-ridden by other external controlling signals.

Oscillator: The functions of the oscillator within the
UC1525A have been broadened in two important
aspects. One is the addition of a synchronization terminal, pin 3, allowing much easier interfacing to an external clock signal or to synchronize multiple UC1525A's
together. The other is the separation of the oscillator's
discharge network from its charging current source for
deadtime control. Reference should be made to the
schematic of Figure 12 for an understanding of the operation of this circuit. The heart of this oscillator is a double-threshold comparator, Q7 and Qs, which allows the
timing capacitor to charge to an upper threshold by
means of the current source defined by RT and mirrored
by Q, and Q2.The comparator then switches to a lower
threshold by turning on QlO and discharges CT through
Q3 and Q4 with a rate defined by RD. As long as CT is
discharging, the clock output is high, blanking the outputs. Since the overall oscillator frequency is defined by
the sum of the charge and discharge times, there are
three elements now in the frequency equation which is
approximately:

PWM Comparator: The significant benefit of the
UC1525A's PWM comparator is in its following latch. A
common problem with earlier devices was that any
noise or ringing on the output of the error amplifier would
affect multiple crossings of the oscillator ramp signal
resulting in multiple pulsing at the comparator's output.
The UC1525A's latch terminates the output pulse with
the first signal from the comparator, insuring that there
can be only a single pulse per period, removing all jitter
or threshold oscillation from the system. Another important advantage of this latch is the ability to easily implement digital or pulse-by-pulse current limiting by merely
momentarily activating the shutdown circuitry within the
UC1525A. This could be as simple as connecting pin 10
to a ground-referenced current sensing resistor. For
greater accuracy, some added gain may be advantageous. Once a current signal causes shutdown, the output will remain terminated for the duration of the period,
even though the current signal is now gone. An oscillator clock signal resets the latch to start each period
anew.

f""-----CT (.07RT + 3Ro)

VREF ----<..------<_-~r----_..,.------____,

7.4K

6

5

14K

RAMP

L-----~---~----t---r-_t-~TOPWM
3

SYNC

25K

2K

BLANKING

25K

TO OUTPUT
1K

Q"

250

4

CLOCK OUT

Figure 12. A simplified schematic of the UC1525A's
oscillator Circuitry.

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III

APPLICATION NQTE

U-89

External synchronization can easily be accomplished
with a 2.BV positive pulse at pin 3. This will turn on 0 9 ,
lowering the comparator threshold below wherever the
voltage on e,. may happen to be. Two factors should be
considered: First, the voltage on CT determines the
amplitude of the PWM ramp, and if the sync occurs too
early, the loop gain will be higher and the resolution may
be worse. Second, the sync circuit is regenerative within
2oons; and, while a wider pulse can be used, e,. will not
begin to recharge as long as the sync pin is high. For
synchronizing multiple UC1525A devices together, one
need only to define a master with the correct RTCT time
constant, connect its output pin to the slave sync pins,
and set each slave RTe,. for a time constant 10-20%
longer than the master.

A 200 Watt, Off-Line, Forward Converter
The ease of interfacing the UC3525A into a practical
power supply system can be illustrated by the off-line,
power converter shown in Figure 13. This 200W supply
places the control circuitry on the primary side of the
power transformer where direct coupling can be used to
drive the power switch. While simplifying the drive electronics, this configuration usually requires an isolated
voltage feedback signal which is most easily accomplished by an optocoupler driven by some type of voltage regulator IC such as a SG723 or LM305. One other
undefined block in Figure 13 is the auxilliary power supply which suppplies the low voltage, low current bias
supply for the UC1525A and the drive for 0" the power
switch. The choice of the UFN44C2 POWER MOSFET

6974

120VAC

200

10K
10K

1.

UC
1525A

1nF

220
13
12
11

3.9K

100

.1p.F

100

10

Figure 13. 2ooW, Off-Une Forward Converter.

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APPLICATION NOTE

U-89

for this switch keeps the total power requirements from
the auxiliary supply at less than 1W; readily implemented with a small, line-driven transformer.
This converter is designed to operate at 150kHz which is
accomplished by running the UC1525A at 300kHz and
using only one of the outputs. This also automatically
insures that the duty cycle can never be greater than
50%, a requirement of the power transformer in this
configuration. The high operating frequency allows the
output filter's roll-off to be set at 12kHz, greatly simplifying the overall loop stability considerations as adequate
response can be achieved with only the single-pole compensation of the error amplifier provided by the .05JLF
capaCitor on pin 9.
The totem-pole output of the UC1525A is used to advantage to drive 0 1 by providing a 400mA peak current to
charge and discharge the MOSFET's gate capacitance
while keeping overall power dissipation low. Waveform

io 2A/div

0-

iG 0.5A/div

0-

vG 10V/div

0-

photographs of this operation are shown in Figure 14.
When operating at full load, the efficiency of this converter is 73% with by far the greatest power losses
occurring in the output rectifiers-even though Schottky
devices have been selected. Switching losses have
been minimized by the fast current transitions, primarily
defined by the leakage inductance of the transformer.
Although this switching time could probably be even further reduced, there could be problems with current
spikes during rise time due to Schottky rectifier capacitance.
Current limiting for this converter is provided by measuring the current in UF!'I44C2 with the D.W resistor in
series with the source and using this voltage to activate
the shutdown circuitry within the UC1525A. While this
will provide a fast-acting short circuit protection on a
pulse-by-pulse basis, a comparator may need to be
added for a more accurate current limit threshold.

l/-----1
3.3K

1~

200

S

100

UC 13
3525A 12 _

4.70
.1J.tF

6

11

7

10

8

9

TSV31 0
10V
o.l

220

10K·'1

-

,....1'--

.2p,F

T·F



'"w
t-

3

t-

~
w

6tel:
0

tU
W

j

0

u

50

100

150

200

250

OUTPUT COLLECTOR CURRENT (rnA)

FIGURE 9 -Output Saturation Characteristics for Each
of the UC1524A's Outputs.

As with the 1524, synchronization to an external clock
should be done with the RTC T time constant set
approximately 10 to 20% greater than that determined
for the required clock frequency, taking into consideration the expected tolerances ofthe components. For
synchronizing multiple UC1524A devices, all RT, CT,
and OSC output terminals should be individually connected together and a Single RT and CT used.
When considering blanking, the pulse on pin 3 may
be extended somewhat by the addition of a capacitor
of up to 1OOpF from pin 3 to ground. If narrower blanking pulses are required, adding a resistive load from
pin 3 to ground of 1 kohm minimum will reduce the
pulse width.
The best way to guarantee a large dead time is still to
use a diode to clamp the peak output from the error
amplifier to a divider from VREF. This technique is
quite accurate due to the accuracy of V REF and the
1OOJLA fixed current available from the amplifier.

FIGURE 10 - The addition of C, and Q 2 Uses the Collector Signal of the UC1524A to Generate
an Enhanced Turn-off Command for Q 3

A Simple Buck Regulator Circuit
The application of Figure 12 demonstrates the utility
of the UC1524A used with a Unitrode PIC600 hybrid
switch_ This combination greatly simplifies the design
of switching regulators, since the only other active
device required is a small-signal2N2222 which serves
to provide a constant drive current to the output switch,
regardless of the input voltage level. With the
UC1524A, current sensing does not have to be done
in the ground line, but will still function when the regulator output is shorted to ground.

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15-153

PRINTED IN USA

APPLICATION NOTE

U-90

OSC
OUT

FIGURE 11 - The Oscillator Circuit of the UC1524A Allows Both High Frequency Operation and Ease of External
Synchronization.
CORE: 2616PA 1003B7
N: 33TAWG 19

Y,N

Your

10-40V

SV,SA

UC1S24A

Y,N
REF

VAEF

OSC
01
01
CT
47K
Rr

Cl(+)
Cl(-)

SHUTDOWN

3.3K

68K

COMP
.OOS

FIGURE 12 - The UC1524A Combines With the PIC 600 Hybrid Switch to Form A Simple But Powerful Buck Regulator.

UNITRODE CORPORATION. 5 FORBES ROAD
lEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

15-154

PRINTED IN USA

APPLICATION NOTE

U·90

The waveforms of Figure 13 demonstrate the performance of the current limiting comparator, showing
that from the onset of current limiting to a complete
short circuit, the peak input current increases from
5.2A to only 5.9A.

A Complete DC-DC Converter with the
UC1524A

4W DC-DC converter operating from a common 28V
bus with no additional output transistors. The schematic of Figure 14 uses a push-pull configuration
which imposes a voltage of twice the supply across
the "OFF" transistor. This is now within the rating of
the UC1524A and, thus, with a 28:7 turns ratio in the
transformer, a 5V, 3/4 A output is achieved with 78%
efficiency at a significant minimum parts count.

An important attribute of the new UC1524A family is
the higher voltage rating on the output transistors.
This now makes it possible to implement a practical

The fast response of the current limit amplifier within
the UC1524A again keeps the device well protected
as shown in the waveforms of Figure 15.

A

B

c

Upper trace is Comp terminal (pin 9), 2 V/div
Lower trace is input current through power switch, O.2A/div
Time base is 10 I-'sec/div.
A
B

~
~

C

~

Onset of current limiting, Ip ~ 5.2A
Into current limiting, Compterminal held low until inductorcurrentfalls below
threshold, Ip ~ 5.9A
Output shorted to ground. Pulse width reduced to 21-'s. Ip still 5.9A.

FIGURE 13 - Performance Data for Figure 14's Regulator Shows the Tight Control of Peak Current, Even Under
Shorted Output Conditions.

III

UNITRODE CORPORATION. 5 FORBES ROAD
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TWX (710) 326·6509 • TELEX 95·1064

15·155

PRINTED IN USA

APPLICATION NOTE

U-90

20-28V
Input

~ 500p,F
V,N
Gnd

Core: 2213P-A400-387
N: 281; AWG22

c.

UES2401

300p,H

2.2k

R,

100
/-If

I

UC1524A

.005

C.

C,

Core: 2213 PL00388
Prim: 28 CT 4 AWG32
Sec: 7 CT 8 AWG32

0.1

a.}

0.80

Comp

33k

FIGURE 14 -

.005 4.7k

With Higher Output Voltage Capability, the UC1524A can Implement a Complete 4 Watt DC to DC
Converter with no Additional Switching Transistors.

UNITRODE CORPORATION· 5 FORBES ROAD
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TWX (710) 326-6509· TELEX 95-1064

15-156

PRINTED IN USA

APPLICATION NOTE

U-90

0-

0-

0-

Circuit at Threshold of Current limiting

Circuit Under Normal Load

-0

0-

-0

0-

-0

0-

Circuit Under Short Circuit Conditions

Circuit Under Full Current Limit

FIGURE 15 - Operating waveforms for the PWM DC-DC converter (Figure 14)
Upper trace = Primary current at 0.1 Aldivision
Middle trace = Pin 9 voltage at 5Vldlvlslon
Lower trace = Load current at O.5Aldlvlsion
Time base
= 5J1.Sldivlslon

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15-157

PRINTED IN USA

APPLICATION NOTE

U-90

An Off-line Forward Converter

drive power coming from winding N2. The low-current
start-up characteristics ofthe UC1524A allow starting
energy to be developed in C 2 with only approximately
8mA required through R 1.

For low to medium power applications, a single-elided
flybac~ or forward converter with all the control on.the

primary side ofthe isolation step-down transformer is
usually the most economical solution, However there
are two complications with this approach. The first is
that although the control circuitry can easily be driven
from a low-voltage winding on the power transformer,
starting energy must be taken from the high-voltage
rectified line where, at 170VDC, every 10mA represents a 1.7W loss. The second complication is in
obtaining adequate regulation of the output while still
meeting isolation requirements from output back to
the line.

The problem of isolated feedback control is solved in
this application by sampling the 5V output level at the
switching frequency by means of the 2N2222 transistor and transformer T 2' With every switching cycle,
the output voltage is transferred from N1 to N2 where
it is peak detected to generate a primary-rElferenced
signal to drive the PWM error amplifier. Diode D2 is
used to temperature compensate for the loss in the
rectifier, D1 and the net result is better than 1% regulation with the main added cost that of a very inexpensive signal transformer.

The 50W forward converter of Figure 16 offers innovative solutions to both these problems. In this circuit,
the UC1524A provides all the control with its operating

Some of the other features of this application include
a duty-cycle clamp on the PWM formed by diode D3

D'

lN914

,---+-____

"--!INV IN

O",F

"h
1 1'N-

D'

lN914

"~Ef
D3
IN914

~"
COMP

RF

'"

L1 COUPLED INDUCTOR
CORE: A 438281-2 MPP
Nl: 13T, 18AWG
N2: 29T, 18AWG
T1 POWER TRANSFORMER
CORE: EC3S-3C8 EE
Nl: 124T, 24AWG
N2: 16T. 28AWG
N3: 14T, 20AWG
N4: 28T, 22AWG

RSC-OT

eLI I

T2 FEEDBACK TRANSFORMER
CORE: 204T 250-3C8
Nl: 14T, 36AWG
N2: 14T, 36AWG
N3: 17T. 36AWG

'00

,F

FIGURE 16 - This 50W Off-Line Forward Converter Features Both High Efficiency and Good Regulation while Maintaining Input-Output Isolation.

UNITROOE CORPORATION. 5 FORBES ROAD
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15-158

PRINTED IN USA

APPLICATION NOTE
and the 10k -1.5k divider from VREF• This method of
clamping is more effective with the UC1524A since
the UV lockout keeps the outputs off until the reference, error amplifier, and oscillator are all operating
within specification.

U·90

0-

100macm

0-

.5acm

Drive for the UMT13005 high-voltage switch is
accomplished by using the emitters of the UC1524A's
output transistors for turn-on and the 2N2222 in conjunction with the 1JLfd base capacitor to provide a
negative base voltage for rapid turn-off as described
in Figure 10.
The resultant drive Signal is shown in Figure 17.
Operating at 40kHz, this regulator provides an isolated
50W of power with an efficiency of 83%, a high degree
of regulation, and fast overload protection.

Conclusion
Although there are now many new integrated circuits
from which to choose in attempting to build more costeffective power supplies, it always helps to review
well established ideas. In the case of the UC1524A,
updating and improving an earlier product has resulted
in a significant advancement: providing greater performance and versatility while reducing system costs.

at Full Load (50W)

FIGURE 17 - Base Current (Upper Trace) and Collector
Current for the UMT 13005 of Figure 16. The
Time Base is 5J-tS per Division.

III

UNITRODE CORPORATION. 5 FORBES ROAD
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15-159

PRINTED IN USA

APPLICATION NOTE

U-91·

APPLYING THE UC1840 TO PROVIDE TOTAL CONTROL
FOR LOW COST, PRIMARY REFERENCED
SWITCHING POWER SYSTEMS
1.

Introduction
There are many potential approaches to be oonsidered in switch mode power supply design;
however, the contradictory requirements of
minimum cost and compatibility with ever more
demanding line isolation specifications make
primary control very attractive. Application of
the UC1840 as a primary-side, off-line controller
presents an extremely cost-effective approach
to supplying isolated power from a widely varying input line while maintaining a high degree of
efficiency.

control and power switch. This eliminates many
of the transitions across the isolation boundary
which significantly increase the cost of the magnetics portion of the power supply's budget.
There are two disadvantages to primary control:
(1) operating or at least starting, the control
electronics from the line voltage (typically 300
VDC), and (2) providing adequate regulation
(which requires feedback from the secondary
across the isolation boundary). The capability
of the UC1840 Control IC to solve these problems while providing all of the regulating,
sequencing, monit9ring, and protection functions referenced to the primary side. makes this
device very attractive .

Primary control means referencing all of the
control electronics along with the power switching device on the input line side of an isolation
transformer. An obvious advantage to this
approach is the simplified interface between the

.---------------{ll

~~NSE

f - - - 1 r - - - - - - - - - - - { 1 0 RAMP
RdC r

9>---------G~J;:==~===:::;_t----1

VI" SUPPLY
DRIVER
BIAS
PWM
OUTPUT

50V REF

GROUND

L=====:::::;:---,-{8

SLOW
STARTI
DUTY CYCLE
CLAMP

OR

-"""-~-'---J 7

CURRENT SENSE

400mV

FIGURE 1. THE OVERALL BLOCK DIAGRAM OF THE UC1840. AN INTEGRATED CIRCUIT OPTIMIZED FOR
PRIMARY-SIDE CONTROL OF OFF-LINE SWITCHING POWER SUPPLIES

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PRINTED IN U.S.A

APPLICATION NOTE
2.

U·91

The UC1840 Controller

(7)

The overall block diagram of the UC1840,
shown in Figure 1, includes the following
features:
(1)
(2)

(3)
(4)
(5)

(6)

Fixed-frequency operation set by userselected components
A variable-slope ramp generator for constant volt-second operation providing
open-loop line regulation and minimizing, or in some cases even eliminating,
the need for feedback control
A drive switch for low current start-up off
the high-voltage line
A precision reference generator with
internal over-voltage protection
Complete under-voltage, over-voltage,
and over-current protection including
progrllmmable shutdown and restart
A high-current, single-ended PWM output
optimized for fast turn-off of an external
power switch

Logic control for pulse-commandable or
DC power sequencing

For an understanding of how these individual
blocks work together in a typical, mediumpower, flyback power supply, reference should
be made to Figure 2 and the functional description which follows.

3.

UC1840 Functional Description
3. 1 Power Sequencing
A simplified schematic of the UC1840's internal
power turn-on circuitry is shown in Figure 3. The
key elements of this function are: (1) the Driver
Bias Switch, Q3, which keeps the loading on the
control voltage line, Vc, to a minimum during start
up; (2) the Under-voltage Comparator which also
functions as a Start Threshold Detector with programmable hysteresis; and (3) an auxiliary,
primary-referenced, low-voltage winding on the
main power transformer which provides normal
control power after turn-on. The sequence of
events is as follows:

DC INPUT LINE

AC
INPUT

A1

A2

A3

FIGURE 2. A FULLY PROTECTED. ISOLATED FLYBACK POWER SUPPLY CAN BE IMPLEMENTED WITH THE
UC1840. A HIGH-VOLTAGE POWER SWITCH. THE TRANSFORMER. AND A SMALL HANDFUL OF
PASSIVE COMPONENTS.

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15-161

PRINTED IN U.S.A

. U·91

APPLICATION NOTE
DC INPUT LINE
R1

01

CONTROL VOLTAGE Vc

r---------------I

UC1840

I

INTERNAL

.

CHIP SUPPLY

15--,I

FEEDBACK
WINDING

II

.

Q3

I

I
R2

POWER
TRANSFORMER

TO PWMDRIVE

I

I

+

·5v

CIN

R3
Rs
TOPWM
COMP

SLOW
8
TURN ONI

Q2

=

I
IL _______

I

I

~

___________ I
~

r

FIGURE 3. THE UC1840's START CIRCUITRY REQUIRES LOW STARTING CURRENT FROM THE DC INPUT
. LINE WITH NORMAL OPERATING CURRENT SUPPLIED FROM A LOW-VOLTAGE FEEDBACK
WINDING ON THE POWER TRANSFORMER

(1)

While the control voltage, Vc, is low
enough so that the voltage on pin 2 is less
than 3V, the StartlUV Comparator does
the following:

Comparator then does the following:
(a) Turns off 01, eliminating the 200J.lA
hysteresis current. This allows the
voltage on Vc to drop before reaching the under-voltage fault level
defined by:

A 200J.lA hysteresis current is flowing
into pin 2 through 01 causing an
added drop across R2.
(b) The drive switch is holding the Driver
Bias transistor, 03, OFF. This
insures thatthe only current required
through R1 is the start-up current of
the UCl840, plus external dividers
(R2, R3, Rs, etc.).
(c) The Slow Turn-on transistor, Q2, is
ON, holding pin 8 and Cs low.
(d) The Start Latch keeps the undervoltage signal from being defined as
a fault.
The start level is defined by:
(a)

(2)

Vc (start) = 3 (R2:3 R3)

Vc (U.V. fault) = 3 (R2 :3 R3)
(b)
(c)

(d)

(3)

+ 0.2 R2.

When Vc rises to this level, the Start/UV

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15-162

Sets the Start Latch to monitor for an
under-voltage fault.
Activates 03 providing Driver Bias to
the power switch, pulling the added
current out of Cin.
Turns off 02 allowing for programmed slow turn-on defined by Rs
and CS.

A normal start-up occurs with the control
voltage, Vc, following the path shown in
Figure 4. If the power supply does not start,
Vc will fall to an under-voltage fault which
will then either initiate a restart attempt or
hold fhe power switch off, depending upon

PRINHO IN lJ S A

U-91

APPLICATION NOTE
the status of the Reset terminal as defined
under Fault Sequencing (Para. 3.4.2). If
start-up does not occur because of some
fault in the Driver Bias line, Vc will continue
to rise until the 40V zener across the reference circuit conducts. This will then clamp
Vc to that level, protecting the control chip.

3_2 Slow Turn-on Circuit
The PWM comparator input connected to pin 8
accommodates several programming functions,
shown in Figure 6. Since this comparator will only
follow the lowest positive input, holding pin 8 low
will effectively eliminate a PWM signal, regardless
of the status of the Error Amplifier output. Prior to
turn-on, and at all times when a fault has been
sensed, 01 is ON, holding pin 8 low.

After start-up occurs, current will continue to flow
in R1 providing a power loss of:
(Vline - VC)2
R1

Pd =

I
I
I

Vc

B

8

D
C
A

5 VAEF OR
DC INPUT LINE

I

UC1840

-

-

-

..--

.....-- UV
VIN

3',1 W 0 HYSTERESIS (UV FAUL

n

FAULT
-)
SHUTDOWN
01

811 CHIP INTELLIGENT

" - - - - - - - - - - - _ TIME

FIGURE 4 UNDER A NORMAL TURN-ON. THfO SUPPLY
VOL TAGE TO THE UC1840. Ve. WOULD RISE
LIGHTLY LOADED TO THE START LEVEL. FALL
UNDER THE TURN-ON LOAD. AND THEN
REGULATE AT SOME INTERMEDIATE LEVEL

Note that where starting energy is stored in an
input capacitor, the time for PWM turn-on must be
less than the time required for the added Driver
Bias load current to discharge the input capacitor
to the under-voltage fault level. In other words,
referring back to Figure 4, the slow turn-on must
be faster than the time required for Vc to fall from
level B to level E.

RI

UES1001
POWE:.A TRANSFORMER

fEEDBACK
WINDING

Another function of pin 8 is to establish a maximum duty cycle limit. This is achieved by clamping
the voltage on pin 8 with a divider formed by
adding Rdc to ground. If Rs is taken to the SV
reference, the clamp voltage will be fixed, which is
desirable if the ramp slope is also fixed. If the ramp
slope is varied with the input line-for constant
volt-second operation-then the clamp voltage on
pin 8 must also vary. This is readily accomplished
by connecting Rs to the DC input line. The divider

II

FIGURE 5. THE ADDITION OF 01 AND 02 CAN ELIMINATE
THE STEADY-STATE CURRENT THROUGH R1
AFTER TURN-ON 02 IS SELECTED TO PASS ALL
CONTROL CURRENT THROUGH ITS BASEEMITTER JUNCTION.

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r~-}oc

When 01 turns off, allowing pin 8 to rise with a
controlled rate will cause the output pulses to
increase from zero to nominal widths at the same
rate. This is accomplished by the addition of Cs
and a charging source, such as Rs, to the SV
reference_

DC INPUT LINE

01

I
I
-.J

FIGURE 6 PIN 8 ON THE UC1840 CAN BE USED FOR BOTH
SLOW TURN-ON AND DUTY-CYCLE LIMITING AS
WELL AS A PWM SHUTDOWN PORT

If this loss is objectionable, it can be reduced more
than an order of magnitude by the addition of a
two-transistor switch shown in Figure 5. In this
circuit, 01 is initially driven on by current through
R2. When the feedback winding starts to conduct
through D1, however, 02 turns on leaving only R2
conducting from the input line.

R2

I

A·.

voltage:

15-163

VPin 8 = (RS

:d~dC) V DC input

PRINTED IN U.S.A

APPLICATION NOTE

U·91

r

UC1840

I
I

VREF

L.:.JI

----------,
RA

..--' OSCILLATOR I--_C_LO_C.,K_ _-.,._ _ _...::R:..j

GE::R~OR

I

I
I

I
12
SENSE ____R,
vv-e----i

Vo

VREF

_---'NY.,

I
I
I
I

PWM
LATCH

CURRENT
LIMITING

.--J

~

____
.SLOW
TURN-ON

CA

6Z~PUT

I

FIGURE 7. THE PULSE-WIDTH MODULATOR WITHIN THE UC1840 SEPARATES THE RAMP FUNCTION
FROM THE FIXED-FREQUENCY OSCILLATOR.
+5v

should be equal to the ramp voltage level that
yields the desired maximum duty cycle, at the
same DC input level.

RT

3.3 PWM Control
Puls6-Width Modulation within the UC1840 consists of the blocks shown in Figure 7. This architecture, with the possible exception of the separation
between the time-base and ramp functions, is
fairly conventional. It is described in greater detail
in the paragraphs which follow.

TO PINg

C~CT

POSITIVE -------J
CLOCK
------,

3.3.1 Oscillator
A constant clock frequency is established by connecting Rt from pin 9 to the 5V reference and Ct
from pin 9 to ground. The frequency is approximated by:

51 OHMS

FIGURE 8. SYNCHRONIZATION TO AN EXTERNAL TIME
BASE CAN BE ACCOMPLISHED BY ADDING A
510 RESISTOR IN SERIES WITH CT.

where the value of Rt can range from 1kn to 100kn
and Ct from 300pF to O.1J.lF. The best temperature
coefficients occur with Ct in the range of 1000 to
3OOOpF. Although the clock output pulse is not
available external to the UC1840, synchronization
to an external clock can still be accomplished with
the circuit of Figure 8, where R1 and C1 are
selected to provide a O.5V, 200ns pulse across the
51 n resistor, and Rt and Ct define a frequency
slightly lower than the synchronizing source.

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R1

To achieve minimum start-up current, the oscillator is not activated until the input voltage is high
enough to give a start command to the drive
switch.
3.3.2. Ramp Generator
The ramp generator function of the UC1840 is
shown in simplified form in Figure 9.

15-164

PRINTED IN U.S.A.

APPLICATION NOTE
TO DC LINE

U-91

r-------l

I

I

UC1840

. . , - -.....- _ 5 VREF

5 VREF

TOPWM
COMPARATOR

R,

I

01

1 COMPENSATION

FIGURE 9. CURRENT MIRRORS 0,-04 ARE USED TO MAKE
THE RAMP CHARG ING CURRENT ;2. LINEARLY
PROPORTIONAL TO THE DC INPUT LINE

FIGURE '0. THE OUTPUT OF THE ERROR AMPLIFIER
OPERATES CLASS A TO 300I'A. BUT CAN
SOURCE AND SINK MORE THAN, mA FOR FAST
RESPONSE

The small signal, open-lOOp gain characteristics
are shown in Figure 11. The amplifier is unity-gain
stable and has a maximum slew rate of just under
1V/f1S.

The NPN and PNP current mirrors provide a charging current to Cr of:
i2= il =

Vline - 0.7V
Rr

Vline
Rr

3.3.4 PWM Comparator and Latch
This comparator (see Figure 7) generates the output pulse which starts at the termination of the
clock pulse and ends when the ramp waveform
crosses the lowest of the three positive inputs. The
clock forms a blanking pulse which keeps the maximum duty cycle less than 100"10. The PWM latch
insures there will be only one pulse per period and
eliminates oscillation at comparator cross-over.

The current mirrors are useful over a current range
of 1/1A to 1mA, but optimum tracking occurs
between 30/1A and 300/1A. Since the voltage across
01 is very small, i2 accurately represents the input
line voltage. The ramp slope, therefore, is:
dv
Vline
-d-t-= RrCr
The peak voltage across Cr is clamped to approximately 4.2V while the valley, or low voltage, is
determined by the on-voltage of the discharge network, 01 and 05. This is typically 0.7V.
If line sensing is not required, Rr should be connected to the 5V reference for constant ramp
slope.

60

"'w
~

8'"0

3.3.3 Error Amplifier
This is a voltage-mode operational amplifier with
an uncommitted NPN differential input stage and
an output configuration as shown in Figure 10.

UNITRODE CORPORATION. 5 FORBES ROAO
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50

I

40

"

30

~
"-

20

~

z
;;:
"0
0

The 1kCl output resistor, Ro, is used both for short
circuit protection and to limit the peak output voltage to less than 4.0V so it cannot rise above the
clamped ramp waveform. At sink currents less
than 3OO/1A, the low output level will be within
200mV of ground but it rises to 1Vat higher current
levels.
The input common mode range is from 1V to
within 2V of the input supply voltage, Vin, and thus
either input can be connected directly to the 5V
reference.

---.....,

70

0

'"'\
PHASE

"'-

10

i'\.AIN
160

\.
\.
~

225

"'ww

270

0

315

"''J:"

a:

"\'

f3
I
w

"-

360

\

·10
100

"

100K

1M

FREQUENCY - HERTZ

FIGURE"

15-165

THE UC'840 ERROR AMPLIFIER HAS A DC GAIN
OF 67 db. A 2 MEGAHERTZ BANDWIDTH. AND
PHASE MARGIN OF APPROXIMATELY 45°

PRINTED IN USA

III

U-9!

APPLICATION NOTE
3.3.5 PWM Output Stage
I n addition to the PWM output signal on pin 12, the
UC1840 also includes an output gating, or arming
function as Driver Bias on pin 14. Both functions
should be considered together in interfacing to the
external high-voltage power switch. These are
illustrated in simplified form iri Figure 12.

d!fferent ways to meet varying system requirements. One obvious application is when the use of
II bipolar transistor switch requires more drive current than the Driver Bias output can provide. Figure 13 shows a more typical bipolar drive scheme
where 05 has been added to boost the turn-on
current with the UC1840 still providing the highspeed turn-off. The circuit now serves as a more
efficient ''totem-pole'' driver since 05 turns off
when 04 conducts. It also illustrates the use of a
Baker Clamp to minimize storage time in 06 and
the capacitors for rapid turn-on and high-current
pulse turn-off.

At very low input voltages (Vin < 3V), both 02 and
04 are OFF. This may necessitate the use of R2,
but its value can be high since it does not have to
turn the output switch off. It merely holds it in the
off state during the early portion of start-up.
Between Vin = 3V and the start threshold (pin 2 =
3V with hysteresis on), 02 is OFF and 04 is ON,
clamping the power switch off with a low impedance. A start command (UV high) turns on 02,
applying (Vin - 2V) to R1. This provides a source
for power switch activation; however, since 04 is
still conducting, the current through R1 is shunted
to ground and the power switch remains held off.

F- - J-,

At
tOO

DAIVEA
02~A405
BIAS
-22,

t.

UC1S40

At the same time 02 turns on, the clamping transistor at the slow-start terminal, pin 8, turns off allowing the voltage on pin 8 to rise according to the
external slow-start time constant described earlier.
This allows PWM pulses to begin to activate 04narrow at first and widening to the pOint where the
error amplifier takes command.

I
I
I

.
06

A2

FIGURE 13. ADDING 05 AS A SWITCHED. DRIVE-BOOST
TRANSISTOR PROVIDES ADDED BASE DRIVE
FOR OS WHILE REDUCING THE STEADY-STATE
CURRENT THROUGH BOTH 02 AND 04.

The interface between the UC1840 and the primary power switch may be implemented in several

-,
UC1840

I
VIN

BIPOLAA

MOSFET

01
STAAT S I G N A L _ - - - - - i

DRIVE BIAS
A1

CLOCK BLANKING
PWM COMMAND

A2

h
1-

FIGURE 12. INTERFACING THE UC1840 PWM OUTPUT STAGE TO EITHER BIPOLAR OR POWER MOSFET
SWITCHES.

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TWX (710) 326-6509 • TELEX 95-1064

15-166

PRINTED IN U.S.A

U·91

APPLICATION NOTE
5v REF

Another application is the two-transistor, off-line,
forward converter topology shown in Figure 14.
This circuit uses proportional base drive where the
UC1840 neE!d only supply a short, turn-off current
pulse with transformer regeneration through T1
providing the steady-state drive. The magnetizing
current is controlled by R1, with 05 added to
rapidly recharge C1 from which the turn-off current is supplied.

Rl

liMITING

CURRENT
SHUTDOWN

+V LINE

400mV

ire

I
I

R2

Rsc

~

FIGURE 15. CURRENT LIMITING AND OVERCURRENT
SHUTDOWN ARE IMPLEMENTED WITH
COMPARATORS OF DIFFERENT THRESHOLDS
AND A SINGLE CURRENT SENSE RESISTOR.

voltage, it is activated when the voltage across Rsc
equals that across R2. Comparator A2, with an
offset voltage of 400mV, will activate for overcurrent shutdown when the voltage across Rsc
rises to 400mV higher than the voltage across R2.
Since the input bias to both comparators is less
than 5JlA, a low-pass filter for noise rejection may
be inserted I)etween Rsc and the sense inputs.
Activation of comparator A2 is defined as an overcurrent fault and it triggers the Error Latch. Its
operation follows.

FIGURE 14 INTERFACING THE UC1840 SINGLE PWM
OUTPUT TO A TWO-TRANSISTOR OFF-LINE
FORWARD CONVERTER WHICH USES
PROPORTIONAL BASE DRIVE.

3.4.2 Fault Sequencing
The fault sequencing logic of the UC1840 is shown
in Figure 16. Since a fault is defined by this device
as an activation of the Error Latch, it makes sense
to start here in an attempt to understand this portion of the circuitry. Setting the Error Latch immediately turns on 01 and 02, discharging the
slow-start capacitor and terminating the PWM output. Note that there is an additional path from the
inverted output of the Start/UV comparator
through OR2 which keeps pin 8 low. This is to keep
the slow-start low during initial turn-on which is
not intended to be classified as a fault.

3.4 Fault Protection
A significant benefit in using the UC1840 is the
multi-faceted fault-sensing and programming
capability built into the device. With the intent to
provide complete control to the power system
under all types of potential malfunctions, faultsensing circuitry has been included to sense overvoltage, under-voltage, or over-current conditions.
Additionally, high-speed, pulse-by-pulse digital
current limiting is included as a separate function.
The operation of these circuits is described below.
3.4.1 Current Limiting
The current limit comparators have differential
inputs for noise rejection but are intended to be
used with ground-referenced current sensing as in
Figure 15. Comparator A1 is delegated to pulseby-pulse current limiting. The output of this comparator drives the PWM comparator, where it
activates the PWM latch, terminating each pulse
when the current sensed by Rsc reaches a threshold defined by divider R1, R2, and the 5V reference.
Since Vc is intended to track the supply's output
voltage, the addition of a resistor from pin 6 to Vc
will provide some foldback to the current limit
characteristic. Since comparator A1 has zero offset

UNITROOE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

POWER
SWITCH

PULSE BY PULSE

The input to the Error Latch is from OR1 which
triggers on signals resulting from four possible
events:
(1) A voltage less than 3V (after prior turn-on)
at the Start/UV sense terminal, pin 2
(2) A voltage greater than 3V at the OverVoltage Sense terminal, pin 3
(3) A voltage of less than 3V on the Ext. Stop
terminal, pin 4
(4) An over-current signal resulting in a differential voltage between pins 7 and 6 of
greater than 400mV

15-167

PRINTED IN

u.s

A

U-91

APPLICATION NOTE
To PWM

.......: - - - - - . . . . , . . . - - - - - - - ; - - , - - _ T O DRIVE SWITCH

COMPARATOR

SLOW
START

-----1"-1'
5.

FIGURE 16. FAULT SEQUENCE LOGIC IS DESIGNED TO INSURE A COMPLETE SHUTDOWN AND FULLY
CONTROLLED RESTART UPON ANY OF FOUR POSSIBLE FAULT CONDITIONS.

Any of these inputs need only be momentary to set
the Error Latch. Transient protection may be
necessary to eliminate false triggering, but it can
be readily accomplished as all the comparator
inputs are high impedances requiring less than
2p.A of input current, and the 3.0V reference yields
a high noise immunity.

the Error Latch, the Reset Latch is free to take the
state commanded by pin 5: high if pin 5 is low and
vice-versa. The latch allows merely a pulse to set
the Reset Latch; the voltage on pin 5 need not be
steady state.
With a high Reset Latch output, the Error Latch still
does not reset until a low signal is sensed on the
StartlUV sense terminal. At that point, AND1 then
resets both the Error Latch and the Start Latch, reestablishing the initial conditions for a normal start
after fully charging the input capacitor. Of course,
if the fault is still present, when the StartlUV input
reaches the start level terminating the Error Latch
reset signal, this latch will immediately set again.

The Start Latch can be understood by recognizing
that at initial turn-on it is reset with a low output.
This prevents AND2 from transmitting a UV fault
signal from the StartlUV non-inverting output to
the Error Latch. At the start voltage level, defined
by a high level on the Start/UV non-inverting
ouput, the Start Latch sets but AND2 still provides
no output. Only when tl:te Start/UV input goes low
again, with the Start Latch output held high, will
AND2 yield an output into the Error Latch.

To aid in the understanding of this logic, Figure 17
gives a pictorial representation of its operation
with both steady-state and momentary signals on
both the Ext. Stop and Reset terminals.

The status of the ReSet terminal, pin 5, determines
what happens after the Error Latch is set. The
choices are:
(1)
(2)
(3)
(4)

If Driver Bias turn-on is used to pump an increment
of charge into an integrating capacitor, and that
capacitor voltage is applied to the Reset Terminal,
some number of retrys could be programmed to
take place before the Reset voltage rises to 3V,
which would then lock the output OFF. Since
Driver Bias continues to cycle in the latched-off
state, the Reset terminal will remain high until it is
either remotely pulled low or the input voltage to
the controller is interrupted ..

Latch off and require a recycle of input voltage to restart
Continuously attempt to restart
Attempt some number of restarts and then
latch off
Latch off and await a momentary reset
pulse to restart

To examine the operation of the Reset Latch; note
that prior to setting the Error Latch, its low output
is inverted to hold the reset input to the Reset Latch
high. This forces the Reset Latch's ouput low,
regardless of the voltage on pin 5, and, thus,
insures no signal out of AND1. With the setting of

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Note that an important element in any restart after
a shutdown is the lowering of the voltage at the
Start/UV terminal below its UV threshold. While
this will occur normally in bootstrap-driven applications, this device can also be used with a con-

15-168

PRINTED IN U.S.A

APPLICATION NOTE

U·91

stant driving voltage by externally applying a
momentary pull-down signal to the Start/UV input
after a fault shutdown.

4. Conclusion
With the UC1840, power supply designers now
have a device specifically developed for off-line,
primary control and one which has addressed the
problems of operation under less than "ideal" or
normal conditions. Not only does this device make
it easier to comply with stringent isolation requirements by requiring a minimum of communication
between primary and secondary, but it is also
ideally suited for powering systems in remote locations where only a simple transmitted pulse is
available for power sequencing.
Be

Of

f

G

HI!

1\

L

I

I

I

I

III

I

I

I

I

!.INO

I

I

I

P

I

OR'>

I

I

I

T

1I

V

I

I

I

A

B
C

o
E
F

PWMou~~Iill

EVENT

TIME

G
H
I
J

mmmmll
U

K

L
M
N

~------~--~~
6~t~~:~
~~6~bk~

o
p
a
R
s

NOTE 1 Vc REPRESENTS AN ANALOG OF THE SUPPLY OUTPUT VOL TAGE
GENERATED BY A PAIMARY·REFERENCED SECONDARY WINDING
ON THE POWER TRANSFORMER IT IS THE VOLTAGE MONITORED
BY THE START/UV COMPARATOR AND, IN MOST CASES, IS THE
SUPPLY VOLTAGE, VIN. FOR THE UC1840

T
U
V

INITIAL TURN-ON Vc RISES WITH LIGHT LOAD
START THRESHOLD DRIVER BIAS LOADS Vc
OPERATING PWM REGULATES Vc
STOP INPUT seTS ERROR LATCH TURNING OFF PWM
uv LOW THRESHOLD ERROR LATCH REMAINS seT
START TURNS ON DRIVER BIAS BUT ERROR LATCH STill seT
Vc AND DRIVER BIAS CONTINUE TO CYCLE
STOP COMMAND REMOVED
ERROR LATCH RESET AT UV LOW THRESHOLD
START THRESHOLD NOW REMOVES SLOW·START CLAMP
RETURN TO NORMAL RUN STATE
RESET LATCH SET SIGNAL REMOVED
ERROR LATCH SET WITH MOMENTARY FAULT
ERROR LATCH DOES NOT RESET AS RESET LATCH IS REseT
vc AND DRIVER BIAS RECYCLE WITH NO TURN·ON
RESET LATCH IS SET WITH MOMENTARY RESET SIGNAL
Vc MUST COMPLETE CYCLE TO TURN ON
$T ART AND ERROR LATCHES RESET
NORMAL START INITIATED
RETURN TO NORMAL RUN STATE

FIGURE 17. THE INTERRELATIONSHIP BETWEEN THE
FUNCTIONS CONTROLLED BY THE FAULT
SEQUENCE LOGIC IS ILLUSTRATED WITH BOTH
STATIC AND PULSE COMMANDS ON THE EXT.
STOP AND RESET TERMINALS.

III

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LEXINGTON, MA 02173 • TEL. (617) 861·6540
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15·169

PRINTED IN U S.A

U-93

APPLICATION NOTE
A NEW INTEGRATED CIRCUIT FOR
CURRENT-MODE CONTROL

Abstract
The inherent advantages of current-mode control over conventional PWM approaches to switching power
converters read like a wish list from a frustrated power supply design engineer. Features such as automatic feed
forward, automatic symmetry correction, inherent current limiting, simple loop compensation, enhanced load
response, and the capability for parallel operation all are characteristics of current-mode conversion. This paper
introduces the first control integrated circuit specifically designed for this topology, defines its operation and
describes practical examples illustrating its use and benefits.

1.0

Introduction
Figure 1 illustrates a simplified block diagram of a
fixed frequency buck regulator employing currentmode control. As shown, the error signal, Ve , is
controlling peak switch current which, to a good
approximation, is proportional to average inductor
current. Since the average inductor current can
change only if the error signal changes, the inductor
may be replaced by a current source, and the order
of the system reduced by one. This results in a
number of performance advantages including
improved transient response, a simpler, more easily
designed control loop, and line regulation comparable to conventional feed-forward schemes. Peak
current sensing will automatically provide flux
balancing thereby eliminating the need for complex
balance schemes in push-pull systems. Additionally, by simply limiting the peak swing of the error
voltage Ve , instantaneous peak current limiting is
accomplished. Lastly, by feeding identical power
stages with a common error signal, outputs may be
paralleled while maintaining equal current sharing.

Over the past several years an increased interest in
current-mode control of switching inverters has
surfaced in the literature. Originally invented in the
late 1960s, this scheme was not publicly reported
until 1977(1) and has seen rapid development by
many authors to date.(2-6) In short, current-mode
control uses an inner or secondary loop to directly
control peak inductor current with the error signal
rather than controlling duty ratio of the pulse width
modulator as in conventional converters. Practically, this means that instead of comparing the error
voltage to a voltage ramp, it is compared to an
analogue of the inductor current forcing the peak
current to follow the error voltage.

Although the advantages of current-mode control
are abundant, wide acceptance of this technique
has been hampered by a lack of suitable integrated
circuits to perform the associated control functions.
This paper introduces a new integrated circuit
designed specifically for control of current-mode
converters. Circuit function and features are described in detail, and a comparative deSign example
is used to illustrate the numerous advantages of this
approach.

CLOCK - - ' ' - - - - ' - _ - ' -_ _

::J[([([

LATCH
OUTPUT

n

-.J

W

n

n

L..J

L.

FIGURE 1. A FIXED FREQUENCY CURRENT -MODE CONTROLLED
REGULATOR.

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LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

2.0 UC1846 Chip Architecture
In addition to all the functions required of conventional PWM controllers, a current-mode controller

15-170

PRINTED IN USA

APPLICATION NOTE

U·93

} - - - - - - - - - - - - - 1 2 VREF

t-+----f11 A OUT.JL
UC1846

OUTPUT STAGE

,--t---t------------i1

C~~J~~t

FIGURE 2 UC1846 BLOCK DIAGRAM

must be able to sense switch or inductor current
and compare it on a pulse-by-pulse basis with the
output of the error amplifier. As may be seen in the
block diagram of Figure 2, this is accomplished in
the UC1846 by using a differential current sense
amplifier with a fixed gain of 3. The amplifier allows
sensing of low level voltages while maintaining high
noise immunity. A list of other features, while not
unique to current-mode conversion, demonstrates
the advanced, state-of-the-art architecture of the
UC1846:

• Under-voltage lockout with hysteresis to guarantee outputs will stay "off" until reference is in
regulation.
• Double pulse suppression logic to eliminate the
possibility of consecutively pulsing either output.
• Totem pole output stages capable of sinking or
sourcing 100mA continuous, 400mA peak
currents.
These various features, along with their interrelationships and applications to switched-mode regulators, will be further discussed in the following
sections.

• A ± 1%, 5.1 V trimmed bandgap reference used
both as an external voltage reference and internal regulated power source to drive low level
circuitry.

3.0

• A fixed frequency sawtooth oscillator with variable deadtime control and external synchronization capability. Circuitry features an all NPN
design capable of producing low distortion
waveforms well in excess of 1 MHz.
• An error amplifier with common mode range from
ground to Vcc-2V.
• Current limiting through clamping of the error
signal at a user-programmed level.
• A shutdown function with built in 350mV threshold. May be used in either a latching, or nonlatching mode. Also capable of initiating a
"hiccup" mode of operation.

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LEXINGTON. MA 02173 • TEL. (617) 861-6540
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15-171

UC1846 Functional Description
3.1 Current Sense Amplifier
The current sense amplifier may be used in a variety of ways to sense peak switch current for comparison with an error voltage. Referring to Figure 2,
maximum swing on the inverting input of the PWM
comparator is limited to approximately 3.5V by the
internal regulated supply. Accordingly, for a fixed
gain of 3, maximum differential voltages must be
kept below 1 .2V at the current sense inputs. Figure 3
depicts several methods of configuring sense
schemes. Direct resistive sensing is simplest, however, a lower peak voltage may be required to minimize power loss in the sense resistor. Transformer
coupling can provide isolation and increase effi-

PRINTED IN U.S A

U-93

APPLICATION NOTE
ciency at the cost of added complexity. Regardless
of scheme, the largest sense voltage consistent
with low power losses should be chosen for noise
immunity. Typically, this will range from several
hundred millivolts in some resistive sense circuits to
the maximum of 1.2V in transformer coupled
circuits.

series with the input is generally all that is required
to reduce the spike to an acceptable level.

lk

/

/
500pf

//

/

I

""n

/

I

I

/

/

FIGURE 4. RC FILTER FOR REDUCING SWITCH TRANSIENTS

A) RESISTIVE SENSING WITH GROUND REFERENCE

3.2 Oscillator
Although many data sheets tout 300 to 500kHz
operation, virtually all PWM control chips suffer from
both poor temperature characteristics and waveform distortions at these frequencies. Practical
usage is generally limited to the 100 to 200kHz
range. This is a direct consequence of having slow
(f t = 2MHz) PNP transistors in the oscillator signal
path. 8y implementing the oscillator using all NPN
transistors, the UG1846 achieves excellent temperature stabillity and waveform clarity at frequencies
in excess of 1MHz.

~ENSE

I
B) RESISTIVE SENSING ABOVE GROUNO
CURRENT

XFORMER

~L---6--}~~lllt,~
C.) ISOLATED CURRENT SENSING

RT

FIGURE 3. VARIOUS CURRENT SENSE SCHEMES

In addition, caution should be exercised when using
a configuration that senses switch current (Figure
3A) instead of inductor current (Figure 38). As the
switch is turned on, a large instantaneous current
spike can be generated in the sense resistor as the
collector capacitance of the switch is discharged.
This spike will often be of sufficient magnitude and
duration to trip the current sense latch and result in
erratic ope'ration of the PWM circuit, particularly at
lower duty cycles. A small RG filter (Figure 4) in

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15-172

SYNC

OSCILLATOR
(PINS)
/

./\

/""\

~

/"\
\

~

SYNC

(PIN 10)

- I 1 - OUTPUT DEADTIME

(rd)

FIGURE 5. OSCILLATOR CIRCUIT

Referring to Figure 5, an external resistor RT is used
to generate a constant current into a capacitor GTto

PRINTED IN U.S A

U·93

APPLICATION NOTE

A plot of output deadtime versus CTfor two values of
RT is given in Figure 7.

produce a linear sawtooth waveform. Oscillator frequency may be approximated by selecting RT and
CT such that:
2.2
fose= - - RT CT

Although timing capacitors as small as 1OOpF can
be used successfully in low noise environments, it is
generally recommended that CT be kept above
1OOOpF to minimize noise effects on the oscillator
frequency (see Section 4.0).

(1 )

Where RT can range from 1K to 500K and CT is
above 100pF. For quick reference a plot of frequency versus RT and CT is given in Figure 6.

Synchronization of one or more devices to either an
external time base or another UC1846 is accomplished via the bi-directional SYNC pin. To synchronize devices, first, CT must be grounded to disable the
internal oscillator on all slaved devices. Second, an
external synchronization pulse must be applied to
the SYNC terminal. This pulse can come directly
from the SYNC terminal of a master UC1846 or,
alternatively, from an external time base as shown
in Figure 8.

FREQUENCY - KILOHERTZ

.n

FIGURE 6. OSCILLATOR FREQUENCY AS A FUNCTION OF
RT AND T

c

Jlov
2.0

Again referring to Figure 5, the oscillator generates
an internal clock pulse used, among other things, to
blank both outputs and prevent simultaneous cross
conduction during switching transitions. This output
"deadtime" is controlled by the oscillator fall time.
Fall time, in turn, is controlled by CT according to the
formula:
rd = 145 CT

[12 - 3.~~RT(kQ;J

' ......- - 1 - - -

FIGURE 8. SYNCHRONIZING THE 1846 TO AN EXTERNAL
TIME BASE

3.3 Current Limit
One of the most attractive features of a currentmode converter is its ability to limit peak switch
currents on a pulse-by-pulse basis by simply limiting the error voltage to a maximum value. Referring
to Figure 9, peak current limiting in the UC1846 is
accomplished using a divider network, Rl and R2 , to
set a pre-determined voltage at pin 1.

(2)

For large values of RT:
rd=145CT

(3)

1000.------,-------,------,

i~

II

lOOb-----4------+.7S~--~

,

i;

::!
~

10b----~·~~~---+----~

~
~

;;

"
1.0

10

100

OUTPUT DEAD TIME, T d - MICROSECONDS

FIGURE 7. OUTPUT DEAD TIME AS A FUNCTION OF TIMING
CAPACITOR CT

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FIGURE 9. PEAK CURRENT LIMIT SET UP

15-173

PRINTED IN U.S.A.

APPLICATION NOTE

U·93

This voltage, in conjunction with 01,acts to clamp
the output of the error amplifier at a maximum value.
Since the base emitter drop of 0 1 and the forward
drop of diode D1 very nearly cancel, the negative
input of the comparator will be clamped atthevalue
VPIN 1 -O.SV. Following this through to the input of
the current sense amplifier yields:
VPIN 1 -O.S

Vcs =

3

(4)

Where Vee is the differential input voltage of the
current sense amplifier. Using this relationship, a
value for maximum switch current in terms of external programming resistors can be derived, resulting
in:
R2 (VREF) - O.S
ICL =

R1 + R2

-'------=:.--

3R s

(S)

While still on the subject of resistor selection, it
should be pointed out that R1 also supplies holding
current for the shutdown circuit, and therefore
should be selected prior to selecting R2 as outlined
in the next section.
One last word on the current limit circuit. As may be
seen from equation S, any signal less than O.SV at
the current limit input will guarantee both outputs to
be off, making pin 1 a convenient point for both
shutting down and slow starting the PWM circuit.
For example, both the under-voltage lockout and
shutdown functions are connected internally to this
point. If a capacitor is used to hold pin 1 low (Figure
10) then as the input voltage increases above the
under-voltage lockout level, the capacitor will
charge and gradually increase the PWM duty cycle
to its operating point. In a similar manner if the
shutdown amplifier is pulsed, the shutdown SCR will
'be fired and the capacitor discharged, guaranteeing a shutdown and soft restart cycle independent
of input pulse width.

TO
UNDER· VOLTAGE
LOCKOUT

FIGURE 11. SHUTDOWN CIRCUITRY

For example, the shutdown circuit of Figure 12,
operating in a non latched mode, will protect the
supply from overcurrent fault conditions. Many
times, if the output of a supply is shorted, circulating
currents in the output inductor will build to dangerous levels. Pulse-by-pulse current limiting with its
inherent time delay, will in general not be able to
limit these currents to acceptable levels. Figure 12
details a circuit which will provide shutdown and
soft-restart if the overcurrent threshold set by R3
and R4 is exceeded. This level should be greater
than the peak current limit value determined by R1
and R2 (see equation 5). Sometimes called a "hiccup mode", this overcurrent function will limit both
power and peak current in the output stages until
the fault is removed.

TO
PWM COMPARATOR

r
FIGURE 10. USING UNDER-VOLTAGE LOCKOUT AND SHUTDOWN
TO INITIATE A SLOW START.

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3.4 Shutdown
The shutdown circuit, shown in Figure 11, was
designed to provide a fast acting general purpose
shutdown port for use in implementing both protection circuitry and remote shutdown functions. The
circuit may be divided into an input section consisting of a comparator with a 3S0mV temperature
compensated offset, and an output section consisting of a three transistor latch. Shutdown is accomplished by applying a signal greater than 3S0mV to
pin 16, causing the output latch to fire, and setting
the PWM latch to provide an immediate signaltothe
outputs. At this pOint, several things can happen. 0 1
requires a minimum holding current, IH, of approximately 1.SmA to remain in the latched state. Therefore, if R1 is chosen greater than SkQ, 01 will
discharge any capacitance, Cs, on pin 1 to ground
and commutate the output latch, allowing C s to
recharge. If R1 is chosen less than 2.SkQ, 0 1 will
discharge Cs and remain in the latched state until
power is externally cycled off. In either case, Cs is
required only if a soft-start or soft-restart function is
desired.

15-174

PRINTED IN USA

U-93

APPLICATION NOTE

placed in the feedback loop to reduce high frequency gain and allow the output capacitor (low
ESR) to roll off loop gain to OdB at 3kHz.
While not demonstrated in Figure 13, fixed frequency current-mode converters are known to be
unstable above 50% duty cycle without some form
of slope compensation C4-61. By injecting a small current from the sawtooth oscillator into the positive
terminal of the current sense amplifier, slope compensation is accomplished, and the converter can
be operated in excess of 50% duty cycle. An alternate, but just as effective, scheme would be to inject
the signal into the negative terminal of the error
amplifier.

R,

FIGURE 12. OVER CURRENT SENSING WITH THE SHUTDOWN
CIRCUIT PRODUCES A SHUTDOWN - SOFT RESTART
CYCLE TO PROTECT OUTPUT DRIVERS

As may be seen, a similar parts count for both
supplies was encountered. Topologically, using the
UC1525A shutdown terminal provided only a crude
current limit in contrast to the UC1846. Furthermore, internal double pulse suppression circuitry of
the UC1846 gave an added level of protection
against core saturation - important if your regulator is prone to subharmonic oscillations. Since both
regulators were over-designed to withstand a short
circuit on the output with resultant high peak currents, the shutdown-restart mode of the UC1846
was not used.

4.0 Noise Immunity
As in all PWM circuits, some simple precautions
should be observed to prevent switching noise from
prematurely triggering the oscillator as it
approaches its upper threshold. This is most evident when large capacitive loads - such as the
gates of power FETS - are directly driven from
outputs A and B. As the duty cycle approaches
100%, the current spike associated with this output
capacitance can cause the oscillator to prematurely trigger with a resulting shift upward in frequency. By separating high current ground paths
from low level analog grounds, using Cr values
greater than 1000pF grounded directly to pin 12,
and decoupling both VIN and VREF with good quality
bypass capacitors, noise problems can be avoided.

It should be pointed out at this time that one of the
main features of a current-mode converter of this
type is its ability to be paralleled with similar units.
By disabling the oscillator and error amplifiers (CT
grounded, +E/ A to VREF, -E/ A grounded) of one or
more slave modules, and connecting SYNC and
COMP pins of the slave(s) respectively, the outputs
may be connected together to provide a modular
approach to power supply design.

5.0 Comparative Design Example
To more vividly illustrate the advantages of currentmode control, a relatively simple push-pull forward
converter was designed using two interchangeable
control sections, as shown in Figure 13. The control
modules consist of (a) a UC1846 current-mode
controller with associated circuitry, and (b) a conventional UC1525A PWM controller with its support
circuitry. Loop compensation of the UC1525A was
implemented by placing a zero in the feedback loop
to cancel one of the polEls in the output stage,
resulting in a unity gain bandwidth of approximately
3kHz - a commonly used technique. Compensating the current-mode converter requires somewhat
of a different approach. Since the output stage contains only a single pole, in theory closing the loop
will produce a stable system with no additional
compensation. In practice, however, it has been
shown that subharmonic oscillation will result from
excess gain at half the switching frequencyC51.
Therefore, a pole-zero combination has been

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Starting with Figure 14, a comparison of line and
load step responses is made between the two converters. As a result of the feed-forward effect of the
current-mode converter, response to a step input
change shows more than an order of magnitude
improvement (Figure 14a) when compared to the
conventional converter (Figure 14b). Although not
as pronounced, response to a step load change
leaves the UC1846 converter (Figure 15) with a
clear advantage in·output response - 40mV as
compared to 70mV for the UC1525A.
Virtually all conventional push-pull converters are
prone to flux imbalance caused by mismatched
storage delays, etc., in the output stage. Figure 16
shows both converters operating with the same
power stage. No effort was made to match output
devices. As may be seen, there is little noticeable

15-175

PRINTED IN U.S.A

III

APPLICATION NOTE

U·93

difference between switch currents of the UC1846.
However, the UC1525A - with identical output

IsDn

15

1"'

transistors - shows phase B driving the core close
to saturation with 50% more current than phase A.

2w

VR[.

5k

11
AOUT

·r
005J,1f

Cr

+T,

UC1846

+E/A

B<'Ul

"

3.2k

lk

......._______'

o-- ....

-+----_--<~-__

The driver outputs on the UC1901 are emitter followers which are biased at 700J.lA. Therefore, if the
drivers are operated without additional bias current
the peak current through the transformer's primary
winding cannot exceed this value. Figure Sa illustrates the relationship of the magnetizing current to
the voltage across the transformer's input. If the
reflected load currents are neglected, it can be
seen that the minimum magnetizing inductance
required for linear transfer of the modulator squarewave is given by:
(1 )

Where:

vp
fc
Ip

the magnetizing inductance,
the peak carrier voltage across
transformer inputs,
the UC1901 operating frequency,
the bias current ofthe UC1901
drivers.

FIGURE 5: TheUC1901 Driver Outputs Followthe Modulator Output Square WIllIe, (a.), Sourcing
and Sinking Current Levels Dependent on
Transformer Inductance, Carrier Frequenc~
and MlIIage Level. When the Bias Level of the
Driver Outputs, I,., is Reached, (b.), a 1H-slate
WIIlIeform is Coupled Across the Transformer,
the Peak MlIIage Level Though, Remains AJ;
proximately the Same. The Re"ecfed Load
Currents are Assumed Negligible.

As an example, consider the case where Vp is
equal to 2V, fc is 100kHz, and the drivers are operating at their internal bias levels. Using equation 1,
the inductance looking into the primary winding
with no secondary load must be greater than 7.1 mHo
Alternatively, if the carrier frequency is raised to
1MHz and the bias levels of the UC1901 drivers are
increased to 3.SmA, then LM can be as low as
1S0J.lH. Using high permeability ferrite material, this
level of magnetizing inductance can be realized with
as little as 10 turns on a small toroid core.

form. Actually, the amplitude information is still
coupled even when the inductance is less than this
minimum. In this case, the UC1901 drivers will
support the voltage across the coil until the peak
current is reached. The result, illustrated in Figure
Sb, is a tri-state waveform at the transformer's input
and output. Peak detection of this waveform yields
the same amplitude information as the linear transfer case, although detection ripple will increase.
Another situation which results in a tri-state waveform exists when the carrier duty cycle is not SO%.
In this case, the volt-seconds across the transformer
will be balanced by an "imbalancing" of the driver

Equation 1 sets a minimum limit on the magnetizing
inductance for linear transfer of the carrier wave-

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15-183

PRINTED IN U.S Po.

III

U-94

APPLICATION NOTE
bias levels. The imbalance will be sufficient to cause
the peak current to be reached during the > 50%
portion of the carrier waveform.

When the resulting ramp reaches the comparator's
lower threshold, the current is switched back to
0 11 and the ramp reverses until the upper threshold is reached and the process begins again. This
results in a triangle waveform at Cr and a squarewave
.
signal at 0 1 and O2 ,

5. The High Frequency Oscillator
The oscillator circuit on the UC1901 is designed
to operate at frequencies of up to 5MHz. To achieve
this operating range the circuit shown in Figure 6
uses only NPN transistors. in those parts of circuit
which are dynamically involved in the actual oscillation. The standard bipolar process used to produce
the UC1901 characteristically yields high fT' typically
250M Hz, NPN devices. Conversely, the same process has PNP structures with fr's of only 1 to 2MHz.
In the oscillator, PNP's are used only in determining
quiescent operating points of the circuit.

The magnitude of the charging current is controlled
by the external resistor, RT and the internally generated voltage across it. This voltage is compensated
to track variations in the comparator hysteresis. The
tracking characteristics of this voltage stabilize the
oscillation frequency over temperature and enhance
the initial frequency tolerance. Typically, repeatability
and temperature stability of the operating frequency
are both better than 5%.
The oscillator circuit has been optimized for a
nominal RT of 1Okn. A desired operating frequency
is obtained by choosing the correct value for Cr. As
shown in Figure 7, the oscillator frequency is give
by the relation:

The latched comparator formed by OC04' diodes
0 1 and O2 , and resistors R1 and R2· hasa ~ontrolled
input hysteresis which determines the peak to peak
voltage swing on the timing capacitor Cr. The timing
capacitor Cr is referenced to V1N since this is the
reference point for the latched comparator's thresholds. The comparator's outputs at 0 1 and O2 switch
the 2X current source through 0 10 changing the net
current into the timing capacitor from positive to
negative, reversing the capacitor voltage's dv/dt.

fosc.

(2)

=

1.24,

RTCT

for frequencies below 500kHz. Above 500kHz, the
solid line indicates appropriate Crvalues. There is

UCI901
OSCILLATOR

CT

AT
(10K)

21 0
EXTERNAL

~~¥R5~~__-4__~C=LO~C~K~IN~P~UT 2

OUTPUT TO
MODULATOR

RGURE 6: UC1901 High Frequency Oscillator Simplified Schematic.

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15-184

PRINTED IN U.S.A

U·94

APPLICATION NOTE

latched comparator via the input device 0 9, and the
differential pair 0 7 and Os. As the clock input goes
high, 0 9 turns Os off and 0 7 on, creating an offset
across R3 that is sufficient to switch the comparator.
The comparator then, as before, drives the modulator. When the clock input returns low, the process is
reversed. Using the external clock input, both the
frequency and duty cycle of the modulator outputs
are controlled.

no upper limit on the size of the capacitor used,
thus allowing the oscillator to have an arbitrarily
long period if desired.
108

10

,J //

,

~

'",
~

i5
~

§

,
10

J/
Vv,N=lOV _

6. A Status Output is More
Than Just a Green Light

R,~IOKO

T, = 25"C

V

,v

10'

- R,C,'-..../ " ,

V

is l

u
"

/

10'

10'

10'

Many systems today require a monitoring function
on the supply output. The status output on the
UC1901 can fill this need, a green light function,
and can also be used to fill some more "sophisticated" needs. The circuit in Figure 8 takes advantage ofthe status output in the start-up of an off-line
forward converter. The UC1901 is being used in an
application where the switching supply must be
synchronized to a system clock. The clock signal
is generated on the secondary or output side of
the supply. To allow start-up, the PWM oscillator is
free-running when the line voltage is applied. As the
supply voltage rises, the UC1901 's external clock
input is driven at the switching frequency rate
through resistors Rl and R2. When the supply output

10

CT VALUE - PICOFARADS

RGURE 7: UC1901 OscillalOr Frequenc}(
To allow operation of the modulator with a carrier
frequency that is driven from a system operating
frequency or clock, the oscillator can be over-ridden.
Tying Cr to the input supply voltage disables the oscillator. The modulator circuit can now be switched
in synchronization with a signal at the external clock
input. Internally, the clock signal is applied to the
RECTIFIED LINE VOLTAGE

OUTPUT FILTER

SUPPLY

POWER
TRANSFORMER

OUTPUT

PWM

OUTPUT

SYNC PULSE
TOPWM
OSCILLATOR

JL

TO PWM

ERROR AMP

A8

<>---+--+-_...r'
COUPLING
TRANSFORMER

-:-

MASTER CLOCK SIGNAL

RGURE 8: The Status Output on the UC1901 is used in the Start-Up of a Power Supply Synchronized 10 a Secondary
Referenced Master Clock. The Coupling 1Iansformer Carries the Feedback and Clock Signals. The Status
Output is used 10 Sequence Clock Signals 10 the UC1901 External Clock Input During Start-Up.

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TWX (710) 326·6509 • TELEX 95-1064

15-185

PRINTED IN U.S A

... rc

):II

:::"'z
X x-

-

."

...
-z",

."

r-

.... "0

n
~
o
z

b-40
-0",

~~O

~S::l>g

'" ...
goo
R11
10K(2W)

~~~

 50 0 •

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326·6509 • TELEX 95-1064

This material appeared in ~DN, October 13, 1983, in
an edited version.

15-190

PRINTED IN U.S A

Dl

DESIGN DATA

PROPORTIONAL BASE DRIVE OF BIPOLAR POWER TRANSISTORS
IN SWITCHING POWER SUPPLIES

Proportional basa drive is a simple and effective method of
achieving improved performance with high voLtage bipolar power
switching transistors in off-line applications.
As shown in
Figure 1, a current transformer provides regenerative base drive
current whose amplitude is proportional to the collector current
being switched. The drive current ratio is established by the
turns ratio of the collector and base windings.
The proportional drive method may be employed with any power
swi tching ci rcuit topo logy.
Advantages over conventi ona l fi xed
base current drive methods include:
1. Fixed base drive current must be large enough to handle the
fu II load (0 r sho rt-ci rcuit load J co llecto r cu rrent. Under
lightly loaded conditions, the switching transistors are
severely overdriven, resulting in long storage and fall
times and more difficult turn-off.
Proportional drive
provides optimal performance under varying load current
conditions.
2. Proportional base drive requires less drive power from the
control circuit.
During the "on" time of the switching
transistor, base drive is provided regeneratively from the
collector circuit through the current transformer.
The
control drive circuit is not required to provide sustaining
base drive current. It must only provide short pulses of
drive current to initiate turn-on and turn-off.
The
amplitude of these drive current pulses can easily be made
large enough to obtain good switching performance from high
voltage bipolar devices in off-line applications.

III

Figure 1.
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TWX (710) 326-6509 • TELEX 95-1064

Proportional Base Drive Circuit
15-191

PRINTED IN U.S.A

DESIGN DATA

Dl

Referring to Figures 1 and 2, when driver transistor Q1 is on,
power switch Q2 is off.
Magnetizing current Id1 in the control
drive winding Nd approachas a steady-state value equal to the
drive circuit supply voltage Vdd divided by R1. Capacitor C1 is
discharged and there is zero voltage across aLL windings of T1.·
When the output of the control circuit turns on, driver Q1 turns
off and primary current Id1 must cease.
Energy stored in T1
causes the voltage at the dotted ends of aLL windings to fLyback
in the positive direction. Id1 multiplied by turns ratio Nd/Nb
becomes Ib1, the turn-on base drive current pulse to Q2.
Collector current Ie starting to flow in winding Nc causes a
regenerative increase in base drive to Q2 until it is switched
fully on.
The final value of Ie induces a proportional base
drive current, Ib, according to the turns ratio Nb/Nc.
During the time that Q2
is on and Q1 is off,
capacitor C1 charges
through R1 to supply
voltage Vdd. At the end
of this "on" period,
driver transistor Q1 is
turned
on
again,
applying the voltage on
capacitor C1 to the
drive
transformer
primary.
This drives
the voltage on the base
of Q2 sharply negative.
The turn-off base
current pulse, Ib2, can
be made larger than Q2
collector current,
resulting in very rapid
turn-off of Q2.
After Q2 is off and Ib2
ceases, any remaining
voltage on C1 across the
drive transformer
primary heLps to rebuild
the magnetizing current.
Diode 01 prevents the
possibility of any
underdamped ringing from
driving the upper end of
Nd negative. At t~e end
of the "off" period,
magnetizing current Id1
has been re-estabUshed
and the cycle repeats.
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LEXINGTON, MA 02173 • TEL. (617) 861-6540
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Ie

I
I

-I b
-Ibl

I
I

-I

Figure 2.
15-192

Waveforms
PRI"ITED IN U.S.A

Dl

DESIGN DATA

It is quite feasible to operate high voltage bipolar transistors
at frequencies above 50 KHz with reasonable efficiency because of
the large amplitude base drive pulses obtainable with this
method.
However, the circuit of Figure 1, as just described, is
not capable of operation at frequencies ebove a few kilohertz.
This is because capacitor C must charge to V dd during the "on"
period of (12, and the R1 C1 charging time constant is far too long
for this to be accomplished at 50 KHz.
This probLem is solved by the addition of a rapid recharge
circuit as shown in Figure 3. During the time that (12 is on and
(11 is off, current through R1 is multiplied by the current gain
of (13, which significantly reduces the charging time of C1. When
(11 turns on, C1 discharges through 02. The base-emitter of (13 is
reverse biased, holding it off during the entire (12 "off" time.

Figure 3.

Improved Proportional Base Drive Circuit

DESIGN PROCEDURE:
Application parameter vaLues must be defined, incLuding drive
requirements for the power switching transistors:
Ic
Ib1
Ic/Ib
Ib2
Vbb2
t2
Vdd
f

Maximum collector current
Initial turn-on base drive current
Sustaining proportional base drive ratio
Turn-off base drive current at max. Ic
Turn-off bese drive sourca voltage at max. Ie
Maximum transistor turn-off time
Drive circuit supply voltage
Operating frequency

Drive transformer base/collector turns ratio is equaL to the
desired proportionaL base drive ratio:

Nb/Nc
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= Ic/Ib

(1

15-193

J
PRINTED IN U.S A.

DESIGN DATA

01

Drive transformer driver/base turns ratio is established by the
desired turn-off base source voltage and the drive circuit supply
voltage, minus 1 volt diode drop:
( 2)

When 0.1 turns off, primary magnetizing current, Id1, transferred
to the base windin~ must provide the required turn-on base drive,
Ib1 •
(3)

The R1 value required to obtain this magnetizing current is:

RI = Vdd/ldl

(4)

During initial turn-off, driver primary current Id2 must absorb
the proportional base drive current and transformer magnetizing
current Id1 in addition to the turn-off base drive current:
(5)

Id2

Capacitor C1 is designed to supply the worst-case energy required
to turn off 0.2:

w

I

-CI(Vdd-IP
2

(Vdd-l)Id2 t2

CI

(6)

When 0.2 is operated at very low duty cycle (such as immediately
after a sudden decrease in load current), C1 may not have time to
fully charge to V dd during the very short "on" time, in spite of
the assistance provided by 0.3'
This will probably not be a
problem, because 0.2 will also not have time to store much charge
and will be much easier to turn off. The time required for 0.2 to
reach equilibrium charge storage i'5 comparabl~ to the time
required to remove this charge during turn-off. The C1 charging
time constant (reduced according to the gain, Hfe, of 0.3) will
generally be adquate if it is less than 1/2 the 0.2 turn off time,
t2'

TCI
UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

(7)

RICI/Ute

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DESIGN DATA

01

DRIVE TRANSFORMER DESIGN:
Turns ratios for tha drive transformer ware established in
equations [1) and [2). Only certain integral number of turns are
parmissible for each winding.
For example, if Nd/Nc is 25, the
permissible number of drive winding turns are 25, 50, 75, atc.,
corresponding to 1, 2, and 3 collector turns.
Winding 12R losses are usually negligible. The drive transformer
design is based on the following two considerations:
1. Magnetizing current Ib1 is required for initial turn-on of
the power switching transistor.
During the time Q2 is on, the
magnetizing current wiLL decrease due to voltage Vbe across the
base winding.
The magnetizing current must not be allowed to
decrease to less than z era, or it wiLL cause premature turnoff
under light load conditions by overcoming the smaLL proportional
drive current lb'
Referred to the primary, the drive winding
inductance must be large enough to prevent Id1 [Equation 3) from
reaching zero with voltage Vbe[Nd/Nb) during the longest possible
"on" time [usuaLLy half the switching period, 1/2f):
2. Under light load conditions, relatively little charge is
required to turn off Q2.
C1 will then have substantial voltage
remaining which wiLL be applied to the drive winding during the
remainder of the "off" period. This will cause the magnetizing
current [and its associated energy storage) to become much larger
than desired.
The problem is solved by designing the drive
winding to saturate at a current level slightly greater than the
desired value of magnetizing current, Id1.
This will result in
dumping any excess energy remaining in C1 and establishing a
consistent starting point on the B-H characteristic at the
beginning of each "on" period.
Figure 4 shows the B-H
characteristic of the
core as seen from the
drive winding.
For the
vertical axiS, B times
core area Ae and Nd
equals IVddt [Faraday's
Law). For the horizontal
aXiS, H times effective
core length,
l,
and
divided by Nd equals the
magnetizing current ld'
[Ampere's Law}.
The
characteristic slope
equals the drive winding
inductance, Ld' and the
area to the left equals
the energy stored.
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TWX (710) 326-6509 • TELEX 95-1064

Figure 4.

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Dl

DESIGN DATA

The operating pOint shown wiLL satisfy the two requirements above
0 nth e h 0 ri z 0 n tal a xis and i f i t e xc e e d s
Vbe(Nd/Nbll2f on the vertical axis under worst case conditions at
high temperature. ProceduraLLy, use Faraday's Law with B close
to saturation at high temperature and with the area, Ae , of the
core selected. Solve for Nd:

i f it e xc e e d sId 1

= BANd
(8)
1£
'
Use the smaLLest permissible Nd equal to or greater than the
value calculated above. An Nd value larger than the calculated
amount simply means that the change in flux density will be less
than the maximum permitted.
Vb, (Nd/Nb)

Next, use Ampere's law with a value for H correspo!1ding to the B
value chosen before, the smaLLest permissible Nd fr'om above,
and I equal to Id1. Solve for the magnetic path length, l.
( 9)

Ndldl = HI

Compare the actual le value for the core selected with the value
calculated above.
If the actual le of the core is significantly
larger than the calculated l, it wiLL be necessary to use either
a smaLLer core, or use a larger permissible number of turns, Nd.
Otherwise, the operating point will not be close enough to
saturation, and the Band H levels will both be too low to
prevent the magnetizing current from becoming negative at the end
of the "off" period.
If the actual core le is smaLLer than the calculated l, the core
wiLL be too heavily saturated, and wiLL not store enough energy
to provide the desired Ib1.
Either go to a larger core, or
introduce a smaLL gap, 19, according to the relationship:
1 =

U, + I1a1g},

wher, l1a = BIH

(10)

Driving Two Transistors.
Two power switching transistors are
often used in series in order to halve their high voltage V ce
rating requirements. It is usually desirable to drive these two
transistors from a single drive circuit.
This can be
accomplished by means of two identical base winc'ings in the
transformer. Nb/Nc must be halved and Nd/Nb doubled from thl:l
values calculated in Eq. (1) and (2) because the total base
current is twice as much as with a single transistor.
As shown in Figure 5, it is also necessary to add a small amount
of resistance in series with each base in order to ensure current
sharing.
A resistor which drops 0.5 volts at maximum sustaining
base drive, Ib, should be adequate.
The added resistance does
not affect the calculation of Nd in Equation (8) because its
voltage drop is negligible compared to Vbe under light load
conditions, when the sustaining base drive is smaLL.
However,
during turn-off, each series base resistor must be shunted by a
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15-196

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Dl

DESIGN DATA

small diode.
Otherwise, a very large Vbb2 value would be
required in order to pull the desired Ib2 out of each base. The
forward drop of this diode must be added to the Vbb2 requirement
in Equation (2).
Vdd~-""--""

03

Figure 5.

Two-Transistor Driver

Line-side ys Output-side Control Circuit, The base and collector
windings of the drive transformer are normally on the input, or
line side, of the power supply. When the controVdriver circuits
are located. on the output side of the supply, high voltage
insulation is required between the drive winding and the base and
collector windings.
This high voltage insulation, usually
greater than 3000 volts, will impair the coupling between lineside and output-side windings.
This results in high leakage
inductance, causing voltage spikes during turn-on and turn-off
which may necessitate additional snubbing or clamping the drive
transistor collector and the power switching transistor base.
When the control and driver circuits
side, the drive transformer does
insulation. Leakage reactance can
especially if multifilar windings are

are are located on the line
not require high voltage
be made almost negligible,
employed.

REFERENCES:
(1)

J. Gregorich and W. Hazen, "Designing Switched-Mode
Converters with a New Proportional Drive Technique,"
Proceedings of PDWERCDN 5, May 1978, pp. E2(1-8).

(2)

P. Wood, "High Efficiency, Cost Effective Off-line
Switching Converters," TRW Applications Note 143, April
1978, pp. 3-4

(3)

R. Severns, "A New Improved and Simplified Proportional
8ase Drive Circuit," Proceedings of PO WERCO N 6, May
1979, pp. 82(1-12).

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T1

DESIGN DATA

250 WATT OFF-LINE FORWARD CONVERTER
DESIGN REVIEW
by
Raoj i Patel
This paper gives a practical exampl e of the design of an off-line
switching power supply with forwerd converter topology.
Topics
include transformer and fil ter inductor design, proportional base
drive, component selection, output filter design, and closing the
control loop using the new Unitrode UC1524A control circuit.
POWER SUPPLY SPECIFICATIONS:
TOPOLOGY:

Forward Converter with Proportional Base Drive

LINE INPUT:

117 Volts +/- 15%
230 Volts +/- 15%

OUTPUT:

Voltage:
Current:
Current Limit:
Ripple Voltage:
Li ne Regul ati on:
Load Regul ati on:

OTHER FEATURES:

Effi ci ency :
75%
Line Isolation:
3750 Volts
Switching Frequency: 40KHz

230V
OR
117V
AC

-

,..

.

INPUT
ACTO DC
CONVERSION DC . .

..

0-

(99-135V), 60Hz
(195-265V),50Hz
5 Volts
5 to 50 Amperes
60 Amperes Short Circuit
100mV p-p maximum
+/- 1%
+/- 1%

SWITCHING
ISOLATION,
AND
STEP DOWN

~

~

RECTIFIER
AND
OUTPUT
FILTER

...-

CONTROL
CIRCUIT

Figure 1. Block Diagram of the Switching Power Supply

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-<,.-c

m
is

::; x... z

X

--<
-z",

l.0015

~G')o

0-<0

~.?!o

~~~

ITl W

::!

,.-·0

~~~

~~~

O~O

~~::o
colD

 5000

N ( i )
p a a

Via(aip)
AB Ae f

From Equstion 3.
a _

!!2 _ 0.9
Ns

>

5000 200
0.15 1.83 40,000

> 91

turas

the primary to secondary turns ratio is:

D [Vip(aip) -VCB(aat)] .. 0.45(200-2) ... 15.36
Vo+VF
5+0.8

Secondary tnrns from Equation 4:
Ns ... Inte,er(Np/a) .. Iate,er(91/15.36)

a

6 turns

Recalcula te the primary turns:
Np .. 6 x 15.36 .. 92 turas
RMS primary current from Equation 6:
I

p

... Ii (
)/Kt... Pia(max)
a max
Via(mia) Kt

333
200 0.71 ... 2.34 A

From Equation 7. the maximum current density for this size core
is:

Imax .. 450 AP-·13' ... 450(5.71)-·13' .. 362

Diems

The minimum primary wire area. Axp. is:
Axp .. Ip(aax)/lmax = 2.34/362 .... 0065 emS
From the Wire Table in Section M2 under 'AREA. Copper'. AWG 19 is
appropriate.
The maximum RMS secondary current. Is. occurs at 50% duty cycle:
Is(max) .. Io(max)/l.414 - 50/1.414 ... 35.3 A
Minimum secondary wire area. Axs. is:.
Axs - Is(aax)/1aax - 35.31362 - .0975 ems
From the Wire Table. this calls for AWG 7 to 8. Ten AWG 18 wires
in parallel wUl carry the required secondary cnrreat and provide
a smooth windin, with less leakage inductance and acceptable eddy
curent losses. Copper strip 2.5x.04 em could also be used.
Th number of turns required for the auxiliary winding is:
Na.

Vd4 Np
Via(aia)

...!!-!! _ 7
200

turns

This will provide enough volt-seconds during flyback to reset the
core (back to zero flux density) at 50.. maximum duty cycle.
A WG 32 wire is adqua te to carry the Vdd supply current.
This
windin, should be tightly coupled to the primary.
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DESIGN DATA

T1

Double-check the wire fit in the window (ne glect Na).
The total
copper area of all windings should be less than 40 .. of the total
window area of the core (0.40x3.l2 = 1.25 cm J max).

Aw' > NpAzp + N.A:u

= 92( .0065) + 6dO( .00823)

= 1.09

cm l

Calculate Lo •• e. and TlRperature Ri.e
The total losses in the windings is calculated from Equation 12.
The mean length per turn, It, for the EC52 core is 7.3 cm, and
AWG 19 wire is .000353 nlcm from the Wire Table at 100 0 C.
P" = 2 Ipl Np It (O/cm) = 2(2.34) 1:I92z7 .3x.000353 = 2.59 watts
The total core losses for 3C8 ferrite are obtained from
Figure 1 in Section M3.
The flux density axis of this graph
assumes the transformer is operating with a symmetrical flux
swing about the or1g1n.
The forward converter operates
asymmetrically,
so enter the graph with AB/2, or .075 T.
The
resulting 0.1 WI cm 3 must be muI tiplied by the core volume to
obtain the total core loss, Pc.
Pc = .01x18.7 = .187 watts
Total transformer losses are:
P t ... P" + Pc ... 2.59+ .187
The temperature rise of the
calulated from Equation 14:

Ae

core

2.78 watts
for

natural

convection

cooling

is

= 850 Pt ... 850(2.78)

As

91

Summarizing the transformer design:
Core:
Np:
Na:
Ns:

Ferroxcube EC52, 3C8 Ferrite E-E core
92 turns AWG19
7 turns AWG32
6 turns 10xAWG18 (10 wires paralleled)

The primary and auxiliary windings are tightly coupled.
The secondary is
insulated with 2mil mylar tape to provide 3750 volt line isolation
capabili ty.
Filter Indpctor De.iln
The design of the filter inductor is covered extensively in
UPi trode Application Note U6 8 A, in the Uni trode Da tabook.
Using
this approach, the inductor design is summarized as follows:
Core:
Winding:
Losses:
Temperature Rise:
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Ferroxcube 4229-3C8 Ferrite Pot Core
7 turns 10xAWG17 (10 wires paralleled)
2.2 watts
35 0 C
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A

DESIGN NOTE

DETERMINING THE CHANGE IN ZENER VOLTAGE
WHEN THE CURRENT IS CHANGED
A common question concerning zener diodes is "what will be the zener voltage at a current different from the
current now specified?"
The difficulty is that the impedance of a zener is not a constant, and 'changes with'the current, so the zener
voltage is a non-linear function of current.
Here is a useful equation that gives a good approximation to the change in zener voltage when the current is
changed from one value to another value.

where kz = I z x Zz and I z is chosen approximately midway between I, and I,
The equation does not include the effect of pulse or dc-heating on the zener voltage. If appreciable junction
heating is involved the thermal model must also be used.
'
Here is an example of how the equation is used.
Question: If the voltage of a UZS733 is specified as 33V at 40mA, what will be its voltage when measured
at SmA?
Using the graph of Zz versus Iz on the data sheet for this device, and choosing a value of Iz at 20mA,
Zz

= 100

So kz = I z

A.V

z

x Z~

== k

z

= 20mA

x

100 = 0.20V

IJi)=
\1,'

0 20

x

In (smA \ = 0.20
40mAj

Thus the zener voltage at SmA will be 33V

~

x

0.42V

In (0.12S) = 0.20V (-2.08) = -0.42V

=32.6V

UZ5706 Series
Typical Zener Impedance
'vs Zener Current

ZENER OURRENT (rnA)

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DN-3

DESIGN NOTE

MINIMIZING STORAGE TIME WHEN USING UNITRODE SWITCHING
REGULATOR POWER OUTPUT CIRCUITS (PIC600 SERIES)

In some applications (such as a reversing motor drive, for example: stepper motor) where storage
time is an important consideration in the design, the normal storage time of PIC600 series (approximately
600ns) can be reduced to acceptable level.
At lower output currents, the excess storage time is a result of the driver stage operating well under
saturation, while at higher output currents it is a result of the output transistor operating into quasisaturation region.
The storage time can be reduced to less than lOOns by utilizing a Baker Clamp technique as shown
in the circuit below:

r---- Baker Clamp

r-,

1
I Drive--'"

31

I

I
I

I

1

1

1

positive supply

1

I
11N9141

--'4

I

LP~6~5 _ _ _

_..J

2

I

I Drive

12

I

I
I
1

_...J
4

negative supply

The Baker Clamp will increase the VCE(sat) losses but this disadvantage will be more than offset by
the improved switching speed.
The Baker Clamp circuit varies the drive current of the PIC600 series for optimum switching speed at
any given load current. The drive current required to the Baker Clamp can be unregulated, as long as it is
greater than 30mA.
The small value of the inductor Ll and L2 (5 to 10 ~H) stops cross conduction during the switching
of PIC600 series.

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III

DESIGN NOTE

DN-4

AVOIDING SPURIOUS OSCILLATION WHEN USING UNITRODE SWITCHING
REGULATOR POWER OUTPUT CIRCUITS (PIC600 SERIES)
Avoid spurious oscillation due to ground loops and RFI when using a Unitrode Switching Regulator
Power Output Circuit (PIC600 Series) in a switching regulator.
The Unitrode switching regulator power output stage (PIC600 Series) is a high frequency fast switching device. Its control circuitry must also operate at high frequency and high gain. Therefore, it is necessary to avoid any ground loops and RFI for stable circuit operation.
The high frequency roll-off of the control circuit should be adjusted properly with a compensation
network. The typical layout of the power circuit is shown in the figure below.

COPPER PATTERN

EIN
TO CURRENT SENSE
L

J

3

2

CIRCUIT DIAGRAM

Capacitor C I (0.2 /If) reduces the RFI generated due to the reverse recovery current spike of the catch
diode, and should be physically located near pin 4 and pin 2 of the PIC625. The capacitor should be a high
frequency by-pass capacitor, such as Polystyrene.
The current sense resistor R3 should be a non-inductive (carbon) type. The current sense signal should
be picked up right across this resistor.
If the switching regulator is operated at the higher end of the input voltage, the inductor should be
shielded with an electrostatic shield, grounded to Point A. The case of PIC625 should also be connected to
Point A.

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DESIGN NOTE

DN-S·

HOW TO SAFELY CHECK SUSTAINING VOLTAGE ON
POWER TRANSISTORS

One of the most important parameters for any power transistor, particularly in switching applications
with inductive loads, is the sustaining voltage. Many manufacturers specify only open base sustaining
voltage (VCEO(SUS)) at a low current level (10 to 200mA); and, even where sustaining voltage with resistive bias (V CER(SUS)) or voltage bias (VCEX(SUS)) is specified on a data sheet, the chances are that it
will not be specified under the exact conditions that will be required by a specific application. Because of
this, many designers select a transistor based on its VCEO(SUS) rating, since VCER or VCEX will always
be greater than VCEO (see Figure I for a graphical explanation of the relationship among VCEO, VCER
and VCEX)'
By choosing a transistor based upon its VCEO rating, the designer may be using a higher voltage
device than necessary. If he could determine the voltage under the actual conditions of his application, it
is possible that a lower voltage device could be used, resulting in considerable cost savings. Figure 2
presents a test circuit that can be used to safely measure sustaining voltage under any bias condition at
collector currents up to SA.
PLEASE NOTE: SUSTAINING VOLTAGE SHOULD NEVER BE READ ON A
CURVE TRACER, EVEN AT LOW CURRENT LEVELS, SINCE POWER RATING
OR REVERSE-BIASED SECOND-BREAKDOWN RATING (ES/b) MAY BE
EXCEEDED, RESULTING IN PERMANENT DAMAGE TO THE TRANSISTOR.
The test circuit of Figure 2 may also be used to check a transistor's ES/b rating if the zener clamp is
removed. ES/b, under a specified bias condition of RBB and VBB, is related to collector current and
inductance as follows:
ES/b (joules) ~ 1/2Li2
Where i is the peak collector current flowing at the time the transistor is turned-off.
It should be noted, however, that the transistor is not protected without the zener clamp, and the
device may be damaged or destroyed if it does not meet its ES/b rating.

III

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DN-S

DESIGN NOTE

5A------------------~~~~--------------------

'----'..,-- V CE R2
RBE2

<

RBEl

100mA------------------~--------~~~+------------

VCE - COLLECTOR TO EMITTER VOLTAGE

Fig. I. Relationship among VCEO(SUS). VCER(SUS). VCEX(SUS)
(Not to Scale)

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DN-S

DESIGN NOTE

+

10V

-=-

r"l

ov-l

L=

VCC ",10Vdc

I~

o-~VV~~~~

PUSH
I'TOTEST

INPUT PULSE
REP. RATE 60

+L--<~_..J

OSCILLOSCOPE
VERTICAL
INPUT

·ZENER CLAMP VOLTAGE SHOULD BE EQUAL TO THE MINIMUM SPECIFIED VALUE OF THE
VCEO. V CER OR V CEX VOLTAGE BEING CHECKED.

VOLTAGE RATING
(VCEO. V CER • VCEX)

1.

250mA

TEST CURRENT
(lc)1

INDUCTOR
(L)

CURRENT
SENSE
(RS)

IB

INPUT
PULSE
WIDTH

';;;SOV

';;;50mA
50mA-200mA
200mA-1.0A
1.0A-S.OA

SOmH
20mH
2mH
0.5mH

100
SO
10
0.20

0.1(1c)
0.1(1c)
0.1(1c)
0.1(1c)

350ILSec
525ILSec
250ILSec
32SILSec

SOV-200V

';;;SOmA
SOmA-200mA
200mA-1.0A
1.0A-S.OA

100mH
40mH
4mH
1mH

JOO
50
10
0.20

0.1(1c)
0.1(1c)
0.1(1c)
0.2(1c)

SOOILSec
1.0mSec
550ILSec
650ILSec

:>200V

';;;50mA
50mA-200mA
200mA-1.0A
1.0A-5.0A

200mH
80mH
10mH
2mH

100
50
10
0.20

0.1(1c)
0.1(1c)
0.2(1c)
0.2(1c)

1.SmSec
2.0mSec
1.25mSec
1.25mSec

THE ZENER CLAMP SHOULD ALWAYS BE USED WHEN TESTING AT COLLECTOR CURRENT
VALUES ABOVE 200mA SINCE THE REVERSE-BIASED SECOND-BREAKDOWN (ES/b) RATING
OF THE TRANSISTOR UNDER TEST MAY BE EXCEEDED.

PASS

250mA
PASS. VOLTAGE CLAMPED

TEST POINT
100mA.200V

FAIL

TEST POINT
100mA.200V

....- -......-~-VCE
REPRESENTATIVE SCOPE TRACE FOR
UNCLAMPED TEST AT IC = 100mA

REPRESENTATIVE SCOPE TRACE FOR
CLAMPED TEST AT Ie = 100mA

Fig. 2_ Test Circuit for VCEO(SUS)' VCER(SUS)' VCEX(SUS)

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DN-6

DESIGN NOTE
OPERATING THE SWITCHING REGULATOR OUTPUT CIRCUIT
(PIC600 SERIES) AT LOW FREQUENCIES

The Unitrode switching regulator power output circuit consists basically of
a power transistor switch and a catch diode.

The appropriate data sheets in the

Unitrode Semiconductor Databook provide the necessary information for determining
junction temperature and power dissipation at frequencies above 10 kHz.
This Design Note provides a method for determining the junction temperature
and maximum allowable power dissipation for the transistor switch and catch diode
when the switching regulator is operated at frequencies under 10 kHz, where the
switching losses are negligible and can be safely ignored.
The method of determining safe power dissipation requires a detailed transient thermal analysis, since the junctions of the transistor and diode are subjected to temperature excursions due to the applied pulse power.
When the device is subjected to a train of periodical power pulses, the
maximum power dissipation and junction temperature can be calculated from the
effective pulse thermal resistance (0 ) as follows:
p

0p

~

x D + (I-D) r(t + T) - r(T) + r(t)
where:

pulse width

t
T

= period

Duty cycle D

= Tt

Peak Power, Ppk is peak of an
equivalent square power pulse
r (t + T) = transient resistance
at time t + T

._--T--..

I1-0

Figure 1.

·~I

r(t) = transient thermal resistance
at time t

Power Pulses

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= DC thermal resistance (from
data sheets)

~

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DESIGN NOTE

1.

DN-6

Calculating the Junction Temperatures (Pulse Train)
A.

Power Transistor Switch

The peak junction temperature of the transistor switch under repetitive
peak power pulse conditions is calculated as follows:

Tj(peak)

Tj (peak)

The transient thermal impedances r(t T + T), reT), r(tT) are obtained from
the transient thermal impedance plot for the transistor (see Figure 2),
tT

B.

= transistor

on-time

Catch Diode

The peak junction temperature of the catch diode under repetitive peak
power pulse condition is calculated as follows:

T

j (peak)

TCASE

+

IF x VF

[R.r x

T

+

(1 - t~

) r (t

D+

DII

T)

- reT) + r(t D)]

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DN-6

DESIGN NOTE

where:
tD

diode on-time

The Transient thermal impedances r(t n + T). r(T). r(t D). are obtained from
the transient thermal impedance plot for the catch diode (see Figure 2).
C.

Power Dissipation

The maximum allowable power dissipation in either the transistor or the
diode is determined by the maximum junction temperature of 150°C:

2.

Calculating the Junction Temperature (Single Shot Power Pulse)
For a non-repetitive power pulse. the rise of junction temperature can be

calculated as follows:

Tj

=

For a pulse with less than 100 mi11isec. the case temperature is assumed
to remain at ambient temperature.

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DESIGN NOTE

DN-6

5.0

t

4.0

~
u

0

3.0

r.1

~

~

til
H

2.0

til

~

~

1.0

r.1

~
0.0
0.01

0.1

10

1

100

1000

TIME (millisec)

Figure 2.

Transient Thermal Resistance - Power Transistor or Catch Diode

III

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DESIGN NOTE

DN-8

A 350 WATT SWITCHING REGULATED OUTPUT POWER SUPPLY
FOR MULTIPLE OUTPUTS UTILIZING
UNITRODE SEMICONDUCTOR COMPONENTS
There are many ways a switching power supply can be designed to obtain regulated
output voltages. When multiple outputs are desired, such as ±5 volts and ±12 volts, the
circuit described below provides the basis for an efficient, economical, and reliable power
supply. It consists of a pulse width modulated buck regulator and a synchronized "H"
(full bridge) inverter, each leg of which operates at 50% duty cycle. The block diagram of
the power supply is shown in Figure 1.

AC
INPUT

RECTIFIER AND
FILTER

BUCK REGULATOR
CONTROL
CIRCUIT

Figure l. Block Diagram

The advantages of this design approach are as follows:
1.

Numerous inductors (normally needed when pulse-width modulating an inverter)
are not required. No filter inductor is required in the output which lowers costs.
Minimum load bleeder resistors are not needed, thus improving efficiency and
excessive heat generation. These features result from the "H" inverter operating
at 100% duty cycle.

2.

A high voltage, low ESR capacitor in series with the power transformer is not
required. The problem of excessive collector current in an "H" inverter stage due
to "walking of core flux" on a saturated B-H curve is eliminated.

3.

There is no possibility of high current or forward-biased second breakdown in the
inverter bridge transistors when they are simultaneously on during switching
periods. The "cross-current" is limited by the inductor, Ll, (the buck regulator
acts as a constant current source) which increases reliability, Furthermore, the
transistors are in saturation during cross conduction again improving efficiency.
and reducing heat generation.

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DESIGN NOTE

DN-8

4.

Only one high voltage switching transistor is required for either 110 or 220V
input.

5.

There is no possibility of forward-biased second breakdown in the bridge transistor during initial turn-on ("start-up").

6.

No expensive high voltage filter capacitor is needed. Filtering is achieved with a
low voltage output capacitor.

Description of the Circuit:
The buck regulator, "H" inverter and control circuit is described in brief in this section.
The detailed schematic of the circuit is shown in Figure 2.
A.

Buck Regulator:

The output stage of a buck regulator consists of a Unitrode Barrier transistor™
UMTI 009 and a fast recovery (50 nanoseconds) high voltage catch diode, the Unitrode
UES 1306. The buck regulator is operated at 50 kHz, twice the operating frequency of the
"H" inverter, with very low switching losses. Operating the buck regulator at higher frequency reduces the cost of the filtering inductor, L I .
The output voltage is regulated in this stage by employing a pulse-width modulation
technique using a UC1524. The output of the filter inductor is clamped below the BVCEO of
transistors used in an "H" bridge with a Unitrode zener diode UZ4212. This diode absorbs the
energy stored in inductor L I during the period when energy is not coupled into the secondary
due to the leakage inductance of power transformer T3., Notice that there is no output filter
capacitor in the buck regulator. This design feature limits excessive cross conduction collector
current in the transistors of the "H" inverter.
The base drive current to the pass transistor is provided with a unique transformer
coupled drive circuit. It provides base drive current up to 100% duty cycle if required. Furthermore, a small amount of energy stored in a ferrite bead in the base drive circuit provides
assistance in turning off the high voltage pass transistor.
B.

"H" Inverter:

The "H" inverter operates at 25 kHz, with a 50% duty cycle in each leg, synchronized
with the buck regulator. It utilizes four low voltage 2N6354 transistors. Low voltage transistors offer low VCE(SAT), high gain and fast switching times. Due to high gain, the base
drive current required is low,

•

The switching losses are kept to a minimum by switching the transistors when inductor,
L I , current is at a minimum. The storage time of the transistor is kept to a minimum by
reducing th'e base drive just prior to transistor turn-off. (The base drive current is highest
when transistor is turned on and reducing linearly.)
The diodes DI - D4 provide the path for magnetizing current at lower output current
as well as the path for energy stored in the leakage inductance of the power output
transformer.

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A.

DN-8

DESIGN NOTE

e

h-~

~
•

~

1

E

h~

;'

§

•

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DN-8

DESIGN NOTE

Current limiting is obtained with a current transformer. The level of the current limit is
maintained constant regardless of temperature by effectively using two diodes in series with
an 8.2 volt zener (Z2) UZ708. Only one driver transformer is used for all four transistors.
The transistor turn-on and turn-off is enhanced with a ferrite bead in the drive circuit.
The output is rectified with Unitrode USD545 Schottky Rectifiers which provide the
advantages of low VF at high current and minimum change in leakage current with temperature. The snubber network across the Schottky diodes prevent reverse bias breakdown from
the large voltage spikes due to leakage inductance in the power transformer, and reduces
RFI.
C.

Control and Drive Circuits:

The regulation function is achieved with a UCl524 P. W.M. monolithic integrated circuit.
The synchronizing pulses from the integrated circuit drive the D-Flip Flop, SN7474. The output
of this D-Flip Flop drives the logic circuit 75450P which provides drive current to low cost
2N30 19 NPN transistors. Line isolation is maintaind with a driver transformer.
The control circuit (UCIS24) is inhibited in a slow start mode to prevent large current and
voltage transients.
The circuit described herein provides conversion efficiency up to 85%. This design
approach achieves an efficient and economical switching-regulated power supply when multiple outputs are desired. The output filter capacitor is smaller in size because each leg of
the "H" inverter operates at 50% duty cycle.

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DESIGN NOTE

DN-8

VOLTS~O
VOLTS

L

n

:JI_----J~_

0

CT - CLAMP VOLTAGE
SG1524

OSCILLATOR OUTPUT
SG1524

V CE - PASS TRANSISTOR
UMTlOO9

IC - PASS TRANSISTOR
UMT1009

IS

o
IZ

'0

J

Lo

i-Lro
!\

------------------------0

IS - SASE DRIVE TO
UMTl009
I Z - ZENER CURRENT
UZ4212
SUPPLY VOLTAGE
TO "H" INVERTER

INDUCTOR CURRENT OR
INPUT CURRENT
TO "H" INVERTER

IS

o

o

~

SASE DRIVES
TO "H" INVERTER

Ip - PRIMARY CURRENT
TRANSFORMER T3

10 - DIODE CURRENT
SCHOTTKY RECTIFIER
USD545

Figure 3. Basic Waveforms

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DESIGN NOTE

DN-S

TRANSFORMER AND INDUCTOR DETAILS
Filter Inductor;
core:

Ferroxcube IF-19
N = 198 turns, wire size AWG # 16
Air gap = 0.2 inches

L2' Ferrite Bead;
Stackpole #57-1552 Ferrite Bead
core:
N I = 2 turns, wire size #32
N2 = 2 turns, wire size #32
T I' "Roo Inverter Driver Transformer;
core:

JII!§(c:
Np

C6

Ferroxcube 376U250-3C8, 376UB250-3C8
Np

= 90

turns, wire size AWG #32

NS = 15 turns, wire size AWG #32

GROUND
SHIELD

T2' Buck Regulator Driver Transformer;

core:

~llps

~~

Ferroxcube 78E272-3C8, 782B272-3C8
Np = 90 turns, wire size AWG #34
N S = 15 turns, wrie size AWG #28

Two transformers wound on same core, over outside legs of
E-I core.

GROUND
SHIELD

T3 . Power Output Transformer;
core:

jl~"
GROUND
SHIELD

Ferroxcube EC-52
Np = 32 turns, wire size #16
NS ~ 4 turns, wire size #26, 36 wires twisted together
NOTE: Secondary is designed for +12 volts output. For
multiple output total copper area of secondary
should be 0.30 x Total Window Area.

T4' Current Transformer;
core:
Ferroxcube 376U250-3C8, 376B250-3C8

911[,
C

Np = 2 turns, wire size AWG #16
NS = 60 turns, wire size AWG #32

NOTE: The information presented in this bulletin is believed to be accurate and reliable. However, no responsibility

is assumed by Unitrode Corporation for its use.
Unitrode Corporation makes no representation that the use or interconnection of the circuits described herein will
not infringe on existing or future patent rights, nor do the descriptions contained herein imply the granting of
licenses to make, use or sell equipment constructed in accordance therewith.

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DESIGN NOTE

DN·10

SQUIB·FIRING CIRCUIT PROVIDES FOR RELIABLE FIRING,
FROM LOW LEVEL INPUTS

The design of reliable squib-firing circuitry often presents particular problems. Squib functions are typically
quite critical, and the initial triggering source for these systems is, by nature, usually minute.
Conventional transistor squib-firing circuits usually require several gain stages, together with a power transistor to handle the squib-firing current. Mechanical squib switches, on the other hand, cannot be operated
repetitively to allow for complete testing of the device and associated circuitry during check-out.
The high sensitivity planar Silicon Controlled Rectifier (SCR) can be triggered directly from low-level input
circuitry, with significant reduction in circuit complexity and size. Reliability is thus considerably enhanced.
The unique characteristics of the planar SCR have resulted in wide usage of this semiconductor component
in squib-firing circuits for rocket engine ignition, detonation, and explosive bolt applications. Compared with conventional transistor techniques or mechanical squib switches, this proven approach has significant reliability advantages, with circuit simplicity, size reduction, mechanical ruggedness and elimination of electrical contacts.
An SCR, with surge current ratings at 100°C of 5 amperes-50 milliseconds or 20 amperes-l millisecond can
easily handle the current required for firing most squibs. Input circuits can be designed to trigger reliably at levels
below 100 microamperes and 1.0 Volt, making the SCR particularly well-suited for direct drive from low level
control logic circuits and simple RC time delay networks. In addition, the bistable properties of the SCR enable it
to be triggered on by a pulse input-remaining in the "ON" state until reset. This inherent "memory" is frequently used to advantage in arming circuits.
Two circuits typical of squib firing applications are shown in Figures 1 and 2. Both will operate from
- 65°C to over 125°C.
In Figure 1, Capacitor C, is charged to +28 Volts through R, and stores energy for firing the squib. A
positive pulse of 1 rnA applied to the gate of SCR, will cause it to conduct, discharging C, into the squib load X,.
With the load in the cathode circuit, the cathode rises immediately to +28 Volts as soon as the SCR is triggered
on. Diode D, decouples the gate from the gate trigger source, allowing the gate to rise in potential along with the
cathode so that the negative gate-to-cathode voltage rating is not exceeded. This circuit will reset itself after test
firing, since the available current through R, is less than the holding current of the SCR. After C, has been
discharged, the SCR automatically turns off-allowing C, to recharge.
R,
+28V
JAN 2N3028

100K

D,

-AINPUT

C,

JAN1N41411

200~f

FIGURE 1

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DESIGN NOTE

DN·10

In Figure 2, energy for firing the squib is supplied directly from the + 28 Volt supply. Caution must be exercised when arming this type of circuit. If anode voltage is applied too rapidly, the SCR may fire. This dv/dt effect acts through the SCR anode-gate capacitance (15 pt), which couples current to the SCR gate (in proportion to
anode dV/dt). The effect is negligible if dv/dt is under 1 Volt/j.lS-as in Figure I, where it is limited by the
charging of C,. Faster rates of rise can be safely handled by increasing the SCR gate bias.
L,
+28V~~~nr~~--~r----------------,

10n

c,
c,
0.11'1

FIGURE 2

In Figure 2, the LRC input network limits the anode dv/dt to a safe value-below 30 VoIts/j.lS. R, provides
critical damping to prevent voltage overshoot. While a simple RC filter section could be used, the high current required by the squib would dictate a small value of resistance and a much larger capacitor. Resistor R, provides
DC bias stabilization, while C, provides stiff gate bias during the transient interval when anode voltage is applied.
In this circuit the SCR is fired one second after arming by means of the simple R, C, Z, time delay network.
R. provides a load for the SCR for testing the circuit with the squib disconnected-limiting the current to a level
well within the continuous rating of the SCR. The circuit can be reset by opening the + 28 Volt supply and then
re-arming.

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DESIGN NOTE

DN·11

COMBINED AC·DC LOAD CONTROL SIMPLIFIES SCR RESET

Silicon Controlled Rectifiers (SCRs) are finding increased use in a wide variety of control circuit and power
switching applications. They offer an economical way to achieve high switching gain, efficiency and blocking
voltage.
When the inherent memory or "latching" feature is not desired, AC anode supply is often used, allowing
the SCR to turn off automatically upon removal of the gate control signal. With an AC anode supply, an additional benefit is derived-the SCR doubles in function as a rectifying element. Thus, it is possible to operate DC
loads directly from an AC power source, often eliminating the need for separate bulky and expensive DC power
sources.
When SCR latching action is desired, DC anode supply is commonly employed. Here, however, reset can be
a problem, since "brute force" reset techniques must normally be used. This involves an additional switching element, to either open or shunt the load voltage, and current from the SCR.
The circuit of Figure 1 retains the advantages of operating loads directly from an AC power source. Latching action is provided with no need for brute force reset techniques. The DC source needs to provide only a few
milliamps of SCR holding current, since load power is drawn from the AC source.

CONTROL
INPUT

FIGURE 1

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DN·11

DESIGN NOTE

When the SCR is on, a half-wave rectified voltage waveform is applied to the load. During each positive
half-cycle of the AC source, diode (or rectifier) D, and the SCR conduct the load current as well as the DC
holding current provided through R,. During each negative half-cycle, D, blocks the negative voltage from the AC
supply, allowing the SCR to remain in conduction. Resistive loads such as heaters and incandescent lamps are
driven satisfactorily with the half-wave rectified output of this circuit. DC loads that are less tolerant of this
waveform can easily be operated by using shunt capacitors or other filtering methods. Shunt free-wheeling diodes
should be employed across inductive loads.
Reset is simply accomplished by interrupting the holding current provided from the DC supply through R,.
The reset interval must, of course, be longer than one half-cycle of the AC line frequency, or it must be timed to
occur during the negative half-cycle, since load current will keep the SCR latched on during the entire positive
half-cycle. The reset interval must exceed the device gate recovery time which ranges from less than 0.5 lois for the
higher speed SCRs to 50 /JS for the slower SCRs.
The DC supply voltage level is not critical and can be less than equal to, or greater than the peak AC supply
voltage. When it is less than the peak AC, however, D, will conduct for a portion of each half-cycle when the
SCR is off, causing a current pulse to flow from the AC to the DC supply through R,.
D, must have a blocking voltage capability greater than the sum of the peak AC voltage plus the DC supply
voltage. The SCR voltage rating must be at least equal to the peak AC or DC supply voltage, whichever of these
is greater.
When many identical or similar circuits are used in a single system (as in a band of SCR incandescent lamp
drivers), multiple reset is easily accomplished by simultaneously interrupting the DC source and resetting all circuits connected to that source.

III

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DN·13

DESIGN NOTE
TURN·OFF METHOD FOR SCRs
MINIMIZES EFFECT OF DVIDT

SCRs can be turned off by reducing the magnitude of the anode current to a level below that of the holding
current, either by opening the anode circuit or by driving the anode negative. Forward blocking voltage cannot be
reapplied until after the minority carrier charge stored in the device as a result of previous forward conduction
has been dissipate.d to a level that can be controlled by the gate bias, otherwise the SCR will self-trigger on again.
In addition, even after the SCRs have recovered, reapplication of anode supply voltage may cause selftriggering due to dv I dt.
Self-triggering of a SCR due to dv/dt is caused by a capacitive current equal to the product of the anodegate (CAG ) capacitance of the SCR and the rate of rise (dv/dt) of applied anode voltage. Sensitivity of a SCR to
dv/dt effects can be controlled by the use of a gate-cathode resistor or a current bias. The SCR will self-trigger
only if the capacitive current is too large to be controlled by the bias resistor. The smaller the bias resistor, the
higher will be the critical rate of rise of anode voltage. However, if the anode-gate capacitance is fully charged
befor~ the supply voltage is reapplied across the SCR, the device will be immune to dv/dt effects.
A simple SCR switching circuit is shown in Figure 1. When switch SI (which can be a relay or a transistor)
is in the closed position, the SCR will fire upon the application of a gate trigger pulse of the appropriate
magnitude and duration. Switch S\, when opened, will turn off the SCR. After switch SI is opened, the anodegate capacitance will charge through the load resistor and the lOOK between gate and ground. When the SCR has
recovered, SI can be closed, and no capacitive current will flow since C AG is already charged to the full anode
supply voltage.

1K

r---I

_.1._
D,

R..

1K

100K

FIGURE 1

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DN·13

DESIGN NOTE

When the cathode circuit of a conducting SCR is initially opened, a large reverse gate current can flow
which may damage the gate-cathode junction of the device. Reverse gate current should be limited to 3 rna for
safe operation of most SCRs. The bias resistors shown in Figure I accomplish this objective, while affording bias
stabilization over the operating temperature range. Bias resistor RGK removes all of the internally supplied gate
current out through the gate terminal. Under this condition, the internal gate current cannot flow across the gate
junction; the device is cut-off, and self-triggering cannot occur. If RaK was connected to the ground side of the
switch, when the switch opened the reverse gate current would be about 15 rnA - far exceeding the maximum
reverse current rating for most SCRs. RGG takes over from RGK when the switch is opened, limiting the reverse
gate current to less than 0.3 rnA. Diode D[ decouples the gate trigger source from the SCR when the cathode
switch is opened. This prevents a low impedance supply from drawing excessive reverse gate current.
For the situation where the anode supply voltage may be subjected to transient pulses or voltage spikes, a
small capacitor CGK , connected in parallel with RGK will absorb the transient charging current. If we assume CAG
is 100 pf then a CGK of 0.002 /-If will form a 20:1 voltage divider requiring a 10V pulse on the anode to result in
the required 0.5V (at 25°C) to trigger the SCR.

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DESIGN NOTE

DN·14

NANOSECOND SCR SWITCH FOR RELIABLE HIGH CURRENT PULSE
GENERATORS AND MODULATORS

The design of reliable modulator and pulse generator circuitry often presents the design engineer with seemingly conflicting requirements. In order to obtain fast rise times, "hard tubes" or hydrogen thyratrons are often
used. This results in a large system which consumes considerable power and has relatively low conversion efficiency. Reliability, jitter, and stability are also common problems in these systems.
To improve reliability, as well as decrease standby power consumption and improve conversion efficiency,
semiconductor devices are a natural choice. However, at the voltage and current levels most often encountered in
these applications, conventional semiconductors are usually too slow.
The nanosecond SCR switch developed by Unitrode allows the designer to upgrade high current, high
voltage modulator and pulse generator circuitry. A single device (GA201 or GA301 *) is capable of operating in
circuits with supply voltages up to 100 Volts DC and pulsed load currents in excess of 50 Amperes. It can be triggered directly from logic level signals (I Volt, 200 microamps) and exhibits a rise time of less than
10 nanoseconds to 1 Ampere with only 10 milliamps of drive signal. Single switches operated in this mode can be
used as high current replacements for avalanche transistors, modulators, and harmonic wave form generators.
Special circuity has been developed to apply these nanosecond switches in applications where supply voltages
exceed the .forward blocking capability of a single device. The simplest of these is shown in Figure I.
The 1 meg-ohm resistors act as a voltage-sharing network to insure that no single device is overvoltaged
because of unequal leakage currents. Turn-on is accomplished by applying a trigger signal to the primary of the
pulse transformer, Tl. The capacitor, which has been charged to the supply voltage through Rc, discharges
through RLo and the string of SCRs. This circuit is useful until the number of stages used requires a pulse
transformer that becomes objectionably bulky. Beyond that point the circuit of Figure 2 or 3 is used.
Figure 2 illustrates an approach that uses a pulse transformer to trigger only part of the string, while the rest
of the devices in the string are supplied with gate drive through the zener diodes. With a supply voltage of 360
Volts DC, a 95 Volt ± 5OJo zener diode across each SCR in the string prevents unequal voltage distribution. When
SCR, and SCR. are triggered, 360 Volts appear across SCR, and SCR, causing zener diodes Z, and Z, to conduct.
Since D, and D, are back-biased, the current must flow through the gate-to-cathode junctions of SCR, and SCR"
thus driving them on. Up to eight stages can be stacked in this manner using a pulse transformer to drive only the
bottom two SCRs in the string. Driving three SCRs with a pulse transformer allows stacking sixteen stages, which
can switch a 1440 Volt load using a pulse transformer that needs to have a dielectric isolation rating of less than
300 Volts.
Figure 3 uses no pulse transformer and can be extended to virtually any number of stages. When SCR, is
triggered, the cathode of SCR, drops from + 100 to essentially 0 Volts. Capacitor C, discharges into the gate of
SCR, causing it to conduct, and this process is repeated for SCR, and SCR•. This circuit has the added feature of
providing negative bias to the SCRs during recharge of the load in order to minimize the effect of dv/dt. As the
voltage rises on the anode of SCR., current flows through the path consisting of C., R., C" R" C" R" etc. This
provides negative bias for the gate-to-cathode junctions of the SCR in the string, making them less sensitive to
dv/dt triggering. This allows the use of rapid recharge circuits which permits operation at higher repetition rates.
Either resonant recharge or active (SCR) rapid recharge techniques may be used with these circuits.
*GA201 recommended for military, GA301 for commercial applications.
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DESIGN NOTE

DN·14

J+300V DC
Rc

FIGURE 1

FIGURE 2

DC

FIGURE 3

If the energy storage element(s) and load consist only of Rand C components, the charging resistor must be
large enough to limit the DC current to a value less than the minimum holding current of the SCRs in the string.
When the load contains an inductive component, as is usually the case in modulator circuits, the network can be
designed to "ring" in order to reverse-bias the SCR string momentarily. permitting the SCRs to regain their forward blocking capability even though Rc allows more than the minimum holding current to flow. Diode DR may
be used in all circuits so that the recharge current will not flow through the output element. In Figures 2 and 3,
DR shunts the reverse "ringing" current around the output element. Diode Dc must be used in circuits that contain inductive elements to protect the string from being excessively back-biased due to circuit ringing.

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•

DESIGN NOTE

DN·15

NANOSECOND SCR FOR LASER DIODE PULSE DRIVER

The use of pulsed gallium-arsenide lasers reql!ires a reliable high speed, high current switch to drive these
devices. In the past the only solid state devices that could be used in this application were avalanche transistors
and fast medium power transistors. Avalanche transistors presented reliability problems, while the standard
medium power transistors available were too slow. The GA200 series "Nanosecond SCR" with a rise time
capability of 10 nsec to I Amp or 20 nsec to 30 Amps provides a solution to both the reliability and the speed
problems and appears to be ideal for this type of application.
The circuit shown in Figure 1 utilizes a GA201 device along with a lumped constant delay line to generate
the desired square current pulse. For simplicity, a single capacitor could be used instead of the delay line. The
delay line, however, has the advantage of producing a square pulse that provides sharp turn-off, which limits the
excess power dissipation that would occur in the laser diode if the pulse fell exponentially. The impedance of the
delay line (= ~) is chosen to produce a slight mismatch, which produces overshoot on the trailing edge of the
pulse. This overshoot acts as a reverse bias on the anode of the SCR, assisting in turning it off. A typical value
for the delay line impedance would be 1 to 2 ohms, which approximates the impedance of the load formed by the
SCR and laser diode in series. The time duration of the pulse ( = ~ per section) can be made as short as desired
with a value of 50 to 100 nsec being typical.
With the SCR in the off state, the delay line will charge to the supply voltage (100 Volts with GA201). A
gate current at the input of as little as 200 IJA. will trigger the SCR. The delay line will then discharge, producing a
square current pulse through the gallium-arsenide laser diode. R, and ROK are chosen so that the current, after the
delay line discharges, will be less than the holding current of the GA201 (= 3 rnA with ROK = 100 ohms.) C,
should be about .001,n and is necessary to prevent false triggering through noise or through dv/dt commutation.
D, provides a charging path for the delay line, while R, ~ 50K provides a stable ground reference. Diode D, insures that the reverse breakover voltage of the GA201 will not be exceeded during the turn-off period.
The forward current level will depend upon the total impedance of the GA201 and the laser diode and the
charging voltage used. With a 100 Volt device and a practical minimum circuit impedance of about 1 ohm, it is
possible to develop peak currents of up to 100 Amps. (See Figure 2 for Time vs Current curve for GA2oo/GB2oo
Series.) Pulse of 60 Amps with rise times of approximately 30 nsec have actually been achieved. For improved
performance at high current levels, the SCRs may be operated in parallel or in series. Parallel operation is
achieved by providing equal series resistors to the gates of the devices and driving them from the same source. By
overdriving the gates with 50 to 100 rnA, simultaneous turn-on is guaranteed. Parallel operation results in lower
forward voltage drop and faster rise time at high current levels. Series stringing techniques can be used in circuits
with a higher total impedance where higher voltages are needed to obtain the desired current levels. For a description of series operation see Design Note 14.

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DESIGN NOTE

DN·15

+ 100V

L
----~

T

'--_--'-_ _--'-_C.... _ _ _ _

% C

R2
:.&

50K

Q1-GA201/GB201, GA301lGB301
0 1 -Gallium-Arsenide Laser Diode
D2 -JAN 1N5802 or 1N5807* (Alternative: UES1101 or UES1301)

D3 -JAN 1N5804 or 1N5809* (Alternative: UES1102 or UES1302)

Note: Heavy lines indicate braided connections for
reduced inductance and resistance_
Figure 1

SURGE RATING-GA200, GB200-PEAK REPETITIVE PULSE

1000
500

en
w

100

w

50

a:
a..

~lGA200 SERIES
GB200 SERIES

IA (avg)
IA (avg)

350mA max, TA
25°C
100°C
6A max, Te

~

«

i'...

-<

........

10
5

III

1.0

.1ps

1ps

lOps
lOOps
PULSE WIDTH

1ms

lOms

Note: For MIL and high Rei series applications, use GA/GB 200/201 and
JAN Diodes.
For high rep rate (high average current), use GB series with
1N5809 or UES1302 rectifiers.
GA300 and UES series are intended for commercial applications.
Figure 2
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DESIGN NOTE

DN·19

A SIMPLE ISOLATION AMPLIFIER USING THE UC1901
The VCl901 Isolated Feedback Generator has other applications besides providing isolated
feedback in switching power supplies. This IC's amplitude modulation system and error amplifier can be
used to implement a very low cost, high bandwidth, isolation amplifier. Isolation amplifiers of this type
find use in switching power supplies, motor controls, instrumentation, industrial controls and medical
systems.
The VCl901 generates a p·rogrammable high frequency carrier signal (up to 5MHz) with an
amplitude that is controlled by a high gain error amplifier. In a typical feedback application, this
amplifier and modulator are used, in conjunction with the VC1901's 1.5V reference and a small signal
coupling transformer, to provide precision regulation for an isolated switching power supply. Capacitively
coupled feedback around the VCl901 error amplifier determines the device's small signal AC response,
but the D<;:: operating point is determined by the requirements of the overall power supply loop. By
adding an additional winding on the coupling transformer and a demodulator circuit for this winding,
local DC feedback can be provided to the VC1901's error amplifier. In this mode very accurate DC, as
well as small signal AC, transfer functions can be established across the isolation boundary.
ISOLATION
:/BOUNDARY

+V'N (5·40V)

14
UC1901
10

12

R,

R,
E'l

-

-osc.

4

R,

DRIVERS

(10k)

--

-=
A Low Cost, High Bandwidth, Isolation Amplifier: An additional feedback winding linearizes the transfer
function of the amplifier by matching the coupling characteristics to the isolated output.

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DN-19

DESIGN NOTE

The configuration of an isolation amplifier using the UCl901 is shown in the figure below. The
drivers on the UC1901 couple an amplitude modulated carrier to two matched windings (W2 and W3) on
a small signal transformer. The demodulated signal from winding W2 is used to provide feedback to the
UCI90l's error amplifier while the demodulated signal from W3 is the isolated output signal. The use of
the feedback winding linearizes the transfer function of the overall amplifier and allows DC signals to be
accurately transferred. Matching of the two demodulator windings and demodulator circuits is important
to maximize linearity and minimize DC offsets. An optional output buffer and filter will reduce residual
carrier ripple and isolate the output demodulator from its load. The internal gain compensation on the
UCl901 is sufficient for stable operation with overall gains down to 12dB. This circuit requires a supply
voltage to the UC1901 that, if not available in the system already, can be generated using a second
similar circuit operating in the reverse direction.
The primary features of this circuit are:
I. Good Signal Linearity
2. Wide Bandwidth (3dB Bandwidths > 500kHz)

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3. High Isolation Capability
4. Low Cost

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15·242

HI·REl SCREENING

16-1

II

16-2

HR201 HI·REL SCREENING

Unitrode semiconductors are inherently high-reliability devices,
manufactured with a quality control system that complies to MILQ-9858A. Some users, however, want the ultimate assurance of
reliability.

4. Reverse Bias Clamp Test, VCEO = Rated VIN, Ic = 5A, f =
25KHz, EouT = 5V, T c = 25°C.
5. Power Stress, T c = 125°C, P = 2.0W, t = 40 hrs.
6. High Temperature Reverse Bias, T A = 125°C, t = 16 hrs., V,=
80% of rating.

In addition to those devices qualified and tested to JANTX and
JANTXV specifications we can supply our broad product line of
hermetically sealed devices screened to various requirements.

For applications where full MIL-S-19500 Table II is not required
we have our own screening specifications as follows:

For discrete semiconductor devices we can screen to Table II of
MIL-S-19500. Our linear integrated circuits can be screened to
MIL-STD-883 METHOD 5004.6. Our switching regulator (PIC) series is not covered by a MIL specification and for this series we
recommend our own ULlOl or ULl02 screening program. This
includes:

PRODUCT

SPECIFICATION

SPECIFICATION
WITH DELTA'S
HR201-D

Rectifiers

HR201

Zeners

HR20lZ

HR201Z-D

2. High Temperature Storage, MIL-STD-750 Method 1032.l.

Surge Suppressors

HR201S

HR201S-D

3. Temperature Cycling, MIL-STD-202 Method 107.

Transistors

HR20lT

HR201T-D

1. Hermetic Seal: Fine and Gross leaks MIL-STD-750 Method
1071.

16-3

~UNITRDDE

16-4

THERMAL, MOUNTING & MECHANICAL SPECIFICATIONS

17-1

II

UNITRODE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEl.. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

17·2

PRINTED IN USA

MOUNTING AND THERMAL CONSIDERATIONS
TO·220 Package

The figures show the typical device and hardware recommended.
Several typical configurations of lead forming are illustrated.

The leads of the TO·220 transistors, SCRs, rectifiers and Schottky
diodes may be formed, but they are not intended to be flexible or
ductile enough for unrestrained lead wrapping.

The advantages of mounting the flange to the printed circuit
board is that improved thermal heat transfer allows operating at
higher levels of power dissipation. The individual specification
sheets give the safe operating area as a function of a case
temperature.

The TO·220 is generally considered as the economic replacement
for the TO·66 power package. Unlike the TO·66, the leads of the
TO·220 may be formed if the following considerations are met.

OPTIONAL
RECTANGULAR

i-SCREW 4-40

@ __

B

BUSHING

~

TRANSISTOR

HEADER

/

.......... MICA WASHER

;~

R-

@_SHOULDER
BUSHING

B

-

HEATSINK

PRINTED
CIRCUIT
BOARD

SCREW 6-32
NOT SUPPliED
WITH DEVICE

~ ------- NOT SUPPLIED
~ / WITH DEVICE

Figure A. Device and Hardware for
Insulated Mounting.

i-SCREW 4-40

METAL WASHER

SHOULDER

/

TRANSISTOR

HEADER

~::::::
©..,/

NOT SUPPLIED
WITH DEVICE

Figure B. Two Alternative Configurations for Axial Strain Relief and Electrical Isolation.

BENDING THE LEADS
Whenever the leads of the T·220 are to be formed, whether by a
special fixture or by the use of long-nosed pliers, several important considerations must be followed. Internal damage to the
device or lead damage may result if anyorall of these precautions
are not considered.

7. Forming fixtures or pliers should not touch the plastic case
because axial strain of'" .005" could cause irreversible internal damage.

S. The leads must be fully restrained during the lead forming
operation to prevent relative movement between the body
and the leads.

1. Minimum bend distance between the plastic body and the
bend is

'Is inch.

2. The minimum radius of the bend is

'/18 inch.

SOLDERING INTO THE CIRCUIT

3. Avoid repeating bending at the same flexure point.

The leads on the TO-220 are solderable; however, there are a few
precautions that must be observed.

4. Whenever possible, use one of the lead forming configurations which relieve strain induced by mechanical or thermal
loads.

1. Soldering temperature must not exceed 270·C.

5. Leads should not be bent greater than 90 degrees.

2. Maximum soldering temperature must not be applied for
more than 5 seconds.

6. Avoid axial pulling or bending that would induce axial strain.
The maximum axial component is 4 pounds.

3. Maximum soldering temperature should not be applied
closer than 'Is inch from the plastic body of the device.

17-3

~UNITRODE

III

MOUNTING AND THERMAL CONSIDERATIONS

TO·220 Package

MOUNTING THE FLANGE
Flange mounting is recommended for maximum power handling
applications. A 6-32 machine screw is recommended. Eyeletting
(hollow rivet) is acceptable if care is taken nottodistortthe flange.
For insulated mount, a 4-40 screw and a shoulder bushing is
recommended (see figure). Suggested material for bushings are:
Diallphthalate, fiber-glass-filled nylon, or fiber-glass-filled polycarbonate. Note unfilled nylon should be avoided. The flange
should not be directly soldered because the use of lead-tin could
produce temperatures in excessofthe maximum storage temperature. See the individual specification for the device.

2. Always fasten the flange prior to lead soldering.
3. Do not allow the forming tool to come in contact with the
plastic body.
4. Maximum mounting torque is 8 inch-pounds.
5. Avoid modifying the flange by machining and do not use
oversized screws.
6. Provide axial and transverse strain relief of the leads.
7. Use recommended insulation bushings. Avoid materials that
exhibit hot-creep problems.

Check list and summary for flange mounting:
1. Use recommended hardware.

Thermal Considerations TO·220 Power Transistors

Ic A

Thermal Resistance, Case to Ambient;
Free Air, No Heatsink ............ 60'C/W typical
Thermal Capacitance
of Package ................. 4.8 watt-secondsrC
Thermal Time Constant .............. 305 seconds

Device Type

Continuous
Peak

Po_r
Dissipation
W

Thermal
Po_r
Resistance
Derating
Junction Case
mW'C

'C/W

UMT/MJE 13004
UMT/MJE 13005

4

8

75

600

1.67

UMTIMJE 13006
UMTIMJE 13007

8

16

80

640

1.56

UMT/MJE 13008
UMTIMJE 13009

12

24

100

800

1.25

UFN732

4.5

18

75

600

1.67

UFN742

8.0

32

125

1000

1.00

Note: When using a 2 mil MICA washer for electrical isolation, add O.4'C/W to heatsink
thermal resistance.

Thermal jOint compound should be used at the interface of the
TO-220 flange and the heatsink to which it is attached.

pated in the circuit. The table below shows junction temperature
resulting from 50W of dissipation when mounted on an infinite
heatsink at 25'C with different methods of interfacing.

Consider a TO-220 power transistor with a thermal resistance
junction to case of 1.25'C/W. The junction temperature produced depends upon the mounting conditions and power dissi-

Thermal Resistance
Case·Heatsink

Interface Condition
Between Case and Heatsink
Assumed direct, ideal metallic contact (no interference)

Junction
Temperature

'C/W

'c

0.0

87.5

1.2

147.5

Thermal compound; Tab screw torqued at 8 inch-pound

0.09

92

2 mil mica washer with thermal compound applied to
both surfaces; tab screw torqued at 8 inch pound

0.58

116.5

1 mil air gap·

..In length has the thermal resistance of ~ 1.2'C/W.

• A film of arr one mil

18'C/W rated sink and thermal compound as above the device
will have a junction temperature of 122'Cwhen operating at 5W in
an ambient of 25'C free air.

When using a small heat sink in free air one must consider the
additional thermal resistance of the heat sink to ambient and
operate at an appropriate power level. For example with an

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1054

17-4

PRINTED IN U.S.A

THERMAL DESIGN CONSIDERATIONS
FOR LEADED DEVICES

For Lead Mounted Rectifiers
and Zeners, for 5 types
of mounting.

Determining The Power Rating for Your Application.
The information given in this section is presented for
straight·forward use by the designer. The value given in
this table is R8JA, the "Total" thermal resistance of the
diode and mounting together~ no other graphs or tables
are needed.
Pmo, TJmo, - TA....,
RSJA
Where: Pmox is the maximum power that can be dissipated
in the device reliably. TJmox is the maximum of the
operating temperature range, usually 175'C, unless
derated for a military or hi rei application.
TAmo, is the max temp that the ambient reference (air
below the device) will reach during operation.
Alternately,
Junction Temp Rise
PR SJA

t

,060"'

TYPE 1

+

o

\"'.OIA,

11/2"

PC BOARD, LIGHT

0

l/a"

~I
CJI

1'/,.---1

~'12" ~I.

I

R

r-"2.

e

az",..OIA,

TYPE 2

PC BOARD, MEDIUM

TYPE 3

PC BOARD, HEAVY

=

=

~,,,.~
,060"
~~ponce
~
\

...-- and solder

rzzzzlZl[)uLLLL
.060 Epoxy Glass
.060" dia. x S/8" high
Terminals are per MS 17122·7

TYPE 4 PC BOARD WITH CHESSMEN TERMINALS

~ '1>" ~

#16 Hook Up

~

"e

Wrap once

===dSOlder

,060 Epoxy Glass
.125" dia. x W' high
Terminals are per MS 17122-8

TYPE 5 TERMINALS AND HOOK-UP WIRES

UNITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

PRINTED IN U 5.A

17-5

RaJA
Total Thermal Resistance in Degrees C/Walt
Mounting Type

Type

1N3611-3614
1N4245-4249
1N4461-4489
1N4736-4764
1N4942-4946
1N4954-4996
1N5063-5117
1N5186-5189
1N5186-5190
1N5550-5553
1N5614-5622
1N5802-5806
1N5807-5811
TVS 505-528
UES1101-1106
UES1301-1306
UR105-125
UR205-225
UT236-347
UT249-363
UT251-364
UT261-268
UT2005-2060
UT3005-3060
UT4005-4060
UTROl-61
UTR02-62
UTR10-60
UTR2305-2360
UTR3305-3360
UTR4305-4360
UTXI05-125
UTX205-225
UTX3105-3120
UTX4105-4120
UZ706-140
UZ4706-4120
UZ5706-5140
UZ7706L-7710L
UZ8706-8120
UZS306·440

1

2

3

4

5

105
105
105
140
98
75
94
75

92
92
92
127
85
62
81
62
59.
62
80
81
62
62
81
62
129
85
114
97
92
85
84

75
75
75
110
68
45
64
45
42
45
63
64
45
45
64
45
112
68
97
80
75
68
67
55
50
97
68
146
67
55
50
112
68
55
50
64
45
45
43
110
64

97
97
97
132
90
67
86
67
64
67
85
86
67
67
86
67
134
90
119
102
97
90
89
77
73
119
90
168
89
77

65
65
65
100
58
35
54
35
32
35
53
54
35
35
54
35
102
58
87
70
65
58
57
45
40
87
58
136
57
45
40
102
58
45
40
54
35
35
33
100
54

72
75
93
94
75
75
94
75
142
98
127
110
105
98
97
85
80
127
98
176
97
85
80
142
98
85
80
94
75
75
73
140
94

72
67
114
85
163

84
72
67
129
85

72
67
81
62
62
60
127
81

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

72
134
90
77

72
86
67
67
65
132
86

PRINTED IN USA.

17·6

LEAD MATERIALS
Unitrode offers a wide choice of lead materials for soldering
or welding because the leads are attached to the pins outside the glass seal. Since the leads do not pass through a
glass-to-metal seal, there is no need to match the thermal
coefficient of expansion of the leads to the glass.

Solderable Leads - Silver plated copper meets the solderability
requirements of MIL-STD 202C Method 208A.
Solid silver leads meeting the requirements of MIL-S-13282
Grade A are available on special order.

Weldable Leads - Three types are available to meet the
welding requirements of MIL-STD-1276A. The pure grade A
nickle leads meet the requirements of type N-l. The gold-plated
nickle leads meet the requirements of type N-2. Gold-plating
is in accordance with MIL-G-45204, Type l.
The copper leads (tin-coated) are the standard lead materials. These leads meet the requirements of type C. Types N-2
and Care solderable as well as weldable.
The following table lists standard lead lengths and materials.
Weights of the diodes with various leads are also shown. In
the event other lead materials are required, please consult
Unitrode.

Body

Material

Usage

ins

mm

ins

mm

Suffix
Letter

Typical
Weight Body
Plus Leads
(mg)

Silver plated
Copper

Solderable

1.0

25.4

.020

.51

None

.030

Silver plated
dumet

Solderable
or weldable

1.0

25.4

.014

.36.

.

-

Silver plated
Copper

Solderable

1.0

25.4

.028

.71

H

260

Lead
Length

A
.045

B
.090
and
C
.125

..

Dia

-

Silver

Solderable

0.7

1.24

.028

.71

M

215

Copper, tinned
(standard)

Solderable
or weldable

1.0

25.4

.028

.71

None

260

Silver plated
Copper

Solderable

1.0

25.4

.040

1.02

J

740

Silver

Solderable

1.0

25.4

.040

1.02

P

740

Copper, tinned
(standard)

Solderable
or weldable

1.0

25.4

.040

1.02

None

740

" Available on lN5767 and lNS957 only,

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

17-7

PRINTED IN U.S.A.

INSULATED STUD PACKAGES
Unitrode's three stud-mounted devices, lOW high-surge
zener diodes, l2A standard recovery' rectifiers, and 9A fastrecovery rectifiers, are also available as shown here with
insulated studs having the same high ratings as the standard
non-insulated devices.

MECHANICAL SPECIFICATIONS

lt

3

Style W

GOld Plated
Nickel Ribbon
(2 Places)

Beryllia
Insulating
Full thread to within
Disc
.060 of shoulder

j... 125" TYP

012" TYP . ..j
30mm
I

I

J?~~~~XRf11-jUIHSilflHlIHf-""'H"It--=-=-..!b~=.\=:0:tI~m
...

6-32 x 240"'.010"

T

6.10mm±.25mm
Copper, Gold Plated

.005" l~~';' RAD.

~

I

385 MAX .I
978mm"'1

'\lsmm

10 16mm
~

-'--

750" MIN
19.05mm

'\

y

250" HEX
635mm

Dimensions in inches.

Style V

6-32 x .240"'.010"
6.10mm±.25mm

Copper, Gold Plated

.005" MAX .
. 13mm

Dimensions in inches.

Part Identification: Style W: Part number printed on ribbon
lead. Style V: Part number printed on body. Numerals are
unique and indicate lOW Zener Series (UZ), l2A rectifier
series (UT), or 9A fast-recovery rectifier series (UTR).
Polarity: Cathode to stud end.
Max. Weight: Styles W & V: 2.3 grams.
Installation Precautions: Maximum unlubricated stud torque:
36 inch-ounces.
Note: Do not use a screwdriver in turret slot for installation
purposes, or damage may result.

OROERING INFORMATION
The type numbers that apply to the standard studs also
apply to the insulated studs with the addition of suffix W
or V for style W or V (see outline drawings). For example,
to specify insulated stud style W for a 6.SV zener, order
UZ7S06W; for a 50V l2A rectifier, order UTSl05W; and for a
lOOV 9A fast-recovery rectifier, order UTR64l0W.

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

17-8

PRINTED IN U.S.A

MECHANICAL SPECIFICATIONS
A

B

1

Band ,nd,cateJ"

~ 155

141m

0 (

j .
t
LI
:) 0

TYP

3 9mm

cathode end

055 TVP

.111

B~~~h=~a~~S\~.l!~~~~P_

028" ... 001

0 7lmm .:t. 03

h08:m1

t
085 MAX

21'r m

115TYP

"im

DC"'-- ~

I- 700'

MIN

1711mm

--1

-

1--2S:~5~~-

V

"Tm

i

105"TVP
27mm t--

.975" MIN. 1---30~~2~A~ _
24.8mm
2.30"MIN.
58.4mm

1625' MIN
413mm

A1

~(]'145JMAX

~

TVP
22mm

i~~~ ~o~3

I

B1

!Ti504~1~

I

Of28 ± 001
071mm

%

!
oj:!:

1.Omm

t

i

03

i

I

_254mm

085 max
216mm

j

4

001
I02mm;t 03

l_g~~~x_1

ASA

~

!

145 max
368mm

I

!

l-~~~-I

ASB

r

CATHODE
BAND
r-K~

~

LK-ilA

A
B
0
K

INCHES
MAX
MIN
0160
0260
0110
0120
0030
0034
1.0
-

~

<=0

CATHODE

K,

=~ ~-.l rn

11B

2

MilLIMETERS
MIN
MAX
406
660
2.79
305
076
0.86
25.4

A

B
0
K

LA-LKJl UB

INCHES
MIN
MAX
0.370
0380
0.190
0.210
0048
0.052
1072
1.0

MilLIMETERS
MIN
MAX
940
9.65
483
533
122
1.32
25.4

AA,BB,CCL

O~A

rrf.

~

UNITROOE CORPORATION· 5 FORBES ROAD
LEXI NGTON, MA 02173 • TEL. (617) 861.6540
TWX (710) 326·6509 • TELEX 95-1064

1

tfol

...,

BB

AA
mm

A

450 MAX

1143 MAX

C

08!iMAX
275TYP
028:t.OOI

216MAX
699T'1'P

•
,
0

700M!N

17·9

07ltOOJ
1778MIN

'"

500 MAX
145 MAX
325TYP
040:tOOI
975MIN

CCl
mm

1270 MAX
368 MAX

1M

600 MAX
185 MAX

mm
1524 MAl(

4JOMAX

826TYP

4]OTYP

1092TYP

I02tOD3

040tOOl

102;!:00
2350MIN

2477 MIN

925 MIN

PRINTED IN U.S.A.

MECHANICAL SPECIFICATIONS
BE

A
B

C
D
E

C

in ••

mm.

1.140 MAX.
2.985-3.015
2.110-2.140
.740-.770
.720 .750

28.96 MAX.
75.82-76.58
53.59 54.36
18.80-19.56
18.29-19.05

CL

#4·40 x

:~~:: ~~:~~~: LONG THREAD

DE, OF

DD

~:I

THREAD
RELIEF TO

0121 OUT TO OIA ,M.AX .",0,

I --1

MINOR OIA

FROM I TO 3

I

B

THOS

TERMINAL 2

..,-----.L1 4·28 X '4
020 MIN
CHAM

6SJmm

~

45'

DG
. Llr

DE

c

-",
LI,

j
~]O"OI~
MAX

DF

255mm

A

",
OD
OD,

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

17-10

NOTES

8

C,
0

1020" MAX
2542rnm

;n

.
.200 ,6.10)
.265 16.73)
1.15
.57 (lU.,

2.'

".!II

O,menslons In .nches wIth metriC::
In PoIrentheses
Minimum
MaXimum
.970 (24.M)
1.020 (25.91)

equivalents Imm

NOTES

.O"'~

•

1 .10)

I.

)

.4SO (17.63)
.•5 (24,13)

.317 (I~OS)
.400 (10.16)
3650 192.11)
1.250 (31.75)

3
5.

PRINTED IN USA

MECHANICAL SPECIFICATIONS
OH

OIL·4

At!

10.~-~

TMRD

I-- 8 -l

A

B
C
0
E

1

.,

10-32

J~~.~a

~_

~Ff---,
ltiSIQ~£G
~~~~£

"

U

5.84-5.97
24.89-2794
0.51-1.02
8.13-8.38
24.64-25.40

i
•

I

/, \,J"_,.l
II

mm.

ins.

.230-.235
.980-1.10
.020-.040
.320-.330
.97-1.00

"

-H:~~l-

'1lIDOIDI

,"fi2,6iMDI

-~--

0

OJ' ...
I"~
,.jj'
.
J
~
1\ ,

_- 1
jl"~

llllDUlI1

~

DSlllI02S)

~;::~~:;t-ll-

CD

t---151~,D_)(III_

~~:m~

IJIIISO

112,OOifi

ZP(f)iS

~:~!~~:II

N(lTES
0)APPI.IUrOSPRiAOOFlEAInPRIORTOINSTAll""ON

r--

Ir.olOIOIlI
NOMIHAl

0 . .""'ESIO'"£TAlliDLE"-OCEN1US
Nominal DimenSions in Milhmet8J'$ and /Inches)

OIL·S J

,9,

B
C
0
E

F

!-F---!

G
H

H

A!ItrmT
BL~~H~ ~

-I

J

INCHES
MIN. MAX.
.200
.014
.023
.030
.070
.008
.015
- .390
.220
.310
.290
.320
.100 BSC
.125
.200
.150
.015
.060
.045
.005
0'
IS'

MILLIMETERS
MIN. MAX.
- 5.08
0.36
0.58
0.76
1.78
0.20
0.38
- 9.91
5.59
7.87
7.37
8.13
2.54 BSC
3.18
5.08
3.81
0.38
1.52
1.14
0.13
0'
IS'

INCHES
MIN. MAX.
.115
.125
.015
.021
.030
.070
.010
.015
.360
.400
.240
.260
.290
.310
.090
.110
.120
.135
.140
.165
.020
.030
.025
.050
.005
0'
IS'

MILLIMETERS
MIN. MAX.
2.92
3.17
0.38
0.53
0.76
1.78
0.25
0.38
9.14 10.16
6.09
6.60
7.37
7.87
2.29
2.79
3.05
3.43
3.56
4.18
0.51
0.75
0.64
1.27
0.13
0"
IS'

AJ
K
L

M

o--\\.-

P

N
P

OIL·S N

,9,

A!IllmT
BL~~H~ ~
J

A

B
C
0
E

F

!-F---!

G
H

Jt~~

J
K
L

M
N

P

OIL·14 N
S,

f.l

1tA A A A ;1t

b
b,

t/)13 12 11 10 9 8

c

1/234567

0
E
E,

j..-E-I

~

E,

A

SYMBOL

S

~\.- C

(Mj~~\j~'d'd

r1 tt ~ -i - >~ -: -:- ~:t~
0

SEATING

-

TQ~L'

PLANE

~il.-i ..j ~ ~il=b'
e

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

17-11

E:!
E3

e
L
L,
Q

Q1
S
S,

50

INCHES
MIN. MAX.
.200
.014
.023
.030
.070
.008
.015
.785
.220
.310
.290
.320
.100
.050
.100 BSC
.125
.200
.150
.015
.060
.020
.098
.005
.005
-

MILLIMETERS
MIN. MAX.
5.08
0.36
0.58
0.76
1.78
0.20
0.38
19.94
5.59
7.87
7.37
8.13
2.54
1.27
2.54 esc
3.18
5.08
3.81
0.38
1.52
0.51
2.49
0.13
0.13
-

NOTES
8
2,8
8
4
4
7

5,9

3
6
6

PRINTED IN U.S.A.

MECHANICAL SPECIFICATIONS
OIL·16 J

I-- 0785 (200)---1
I
0755 (19 1)
I

°""·""""0

g

-

C

D

1117mm

AC

AC

_~

".,

Ql1mm 127mm
Tinned Copper Lead

mm.

In•.

100 Typ-.ll.254mm

A
B

.75 MIN.
.50 MAX.

19.05 MIN.
12.70 MAX.

C
D

.028 DIA.
.187 MAX.

4.75 MAX.

.71 DIA.

Dimensions in inches and millimeters

SB

SC

I.--

A
B
C
D

A

c::=:J
-+----.1 Ie

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

~ A~

L

A
B

MIN.
MAX.
DIA.

C
D

MAX .

17-18

1.25 MIN.
1.125 MAX.
.032 DIA.
.187 MAX.

0

-H-

C

D

mm.

Ins.

mm.
31.75
21.59
.81
4.75

B

D

B

Inl.
1.25 MIN.
0.85 MAX.
.032 DIA.
. 187 MAX.

~

0

-<1>-

31.75
28.58
.81
4.75

MIN.
MAX.
DIA.
MAX

PRINTED IN U.S.A

MECHANICAL SPECIFICATIONS

so

SE

D
MOLDEO-1

EPOXY

j-

r-

B

D

I

!....,.I-tl=]-1--1

-m, ---r

~I

A ,-

' 1--1
E

C
D
E

1.25 MIN.
875 MAX
032 DIA.
.250 MAX.
.375 MAX

31.75
22.23
.81
6.35
9.53

A
B

MIN.
MAX
DIA.
MAX
MAX

C
D
E
D

SF

Ins.
1.25 MIN
1.375 MAX.
032 DIA.
.250 MAX.
375 MAX.
.078

3175
34.93
.81
6.35
9.53
1.98

,r ,
~

EPOXY?

c

mm.

ins.
A
B

MOLOE01

, ---r

F

MIN.
MAX
DIA.
MAX
MAX.

SJ. SK. SL. SM. SN
D

II

A

--+-I

B

I

-----1
I

MOLOEO

EPOXV\J

'II"

~

~=[I==:JI=~~ J?~
A
B

C
D

D

ins.
125 MIN.
1.75 MAX.
.032 DIA.
.400 MAX.
400 MAX.
.078

o
(2)

mm.
31.75 MIN
4445 MAX.
.81 DIA.
10.16 MAX.
10.16 MAX
198 MAX .

D

Dimensions in inches and (millimeters)

SK

SJ
A

Ins.
031 , .002

Ins.

MM

0.79' 0.05

031 , .002

0.79,0.05
5.08,0.13

28.4

B

1 12

284

C

.410, 005

10.41,0.13

1 12
200 , 005

D

140::,;; 005

3.57'0.13

100:t 005

Ins.

MM

MM

Ins.

MM

.040, 003

1 016 ± 076

Ins.
.093, 003

2.36,076

020 ± .001

0.51 ± 0.03

SL
A

MM

2.54

::t

0.13

SN

SM

B

40

10.16

40

1016

.60

15.24

C

400:t 015

1016 ± 381

375 ± 015

1500±015

38.1 ± .381

D

300, 015

762,

500 ± .015

9.52' 381
12.7 ± 381

235 ± .005

5.97,0.13

381

TG

A
B

C
D

..)NITROOE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95·1064

17-19

INCHES
020 ± 002
10 MIN
285 ± 015
095 ± 01

&II

MILLIMETERS
508 ± 051
254 MIN
7239 ± 381
2413 ± 254

PRINTED IN U.S A.

MECHANICAL SPECIFICATIONS
TM

INCHES
025 ± 003
10 MIN
405 ± 015
14 ± 015

A
B

c
D

MILLIMETERS
635 ± .076
254 MIN
10287 ± 381
3556 ± 381

TO·3 (3 PIN) (See TO·204AA for 2 PIN TO·3)
mm.

Inl.

A
B

C
D
E
F
G
H

J
K
L

M
N

P

.875 MAX.
.135 MAX.
.250-.450
.312 MIN.
.205-.225
.420-.440
.145-.165
.395 .405
151-.161 DIA.
.188 MAX. RAD.
.525 MAX. RAD.
.708-.728
1.177-1.197
.Q38-.043 DIA.

22.23 MAX .
3.43 MAX.
6.35-11.43
7.92 MIN.
5.21-5.72
10.67-11.18
3.68-4.19
10.03-10.29
3.84-4.09 DIA.
4.78 MAX. RAD.
13.34 MAX. RAD
17.98-18.49
29.90-30.40
0.97-1.09 DIA .

TO·5

un~
--- -- •

B

0

'-F

-

A
B
C
D

±~K
"or P1EtTj-·

E

F

G

G
H

~

J
K

L

1111.
.335-.370
.305-.335
.240-.260
1.5 MIN.
.010-.030

017 ± :88~
.200
100
.028-.034
.029 .045
.100

mm .

8.51-9.40
7.75-8.51
6.09-6.60
38.10 MIN.
.254-.762
.432 ± :8~~
5.08
2.54
.711-.864
.736-1.14
2.54

TO·5 Pancake

A
B
C
D

,A"jl
'~
I" --1
::;~¥5;
I
L
I' [}:~~'~
A

.l......-

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E

• •:

.=

F

.017 ± .88~

G

.200
100
.028-.034
.029- 045
.100

H

J

-L

K

L

UNITRODE CORPORATION· 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

17-20

Ins.
.335-.370
305-.335
.165-.185
1.5 MIN.
010-.030

mm.

8.51 9.40
7.75-8.51
4.19-4.70
38.10 MIN
.254-.762
432 ±·m
5.08
2.54
.711-.86~_

.736-1.14
2.54

PRINTED IN U.S.A.

MECHANICAL SPECIFICATIONS
TO·9

r

Bl

C 1fE D

l

~~.

-

--~

-

--

--.-

--

----

F

A

•
G

\

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ins.
275 .335
.290-.370
.200-.260
1.5 MIN.
.010-.030

A
B
C
D
E

--

,

F

.017'

H
J

200
100
.100

G

-IJ-

:gg~

mm
6.99-7.75
7.37-9.40
5.08 6.60
3810 MIN.
.25-76
432. .051
.025
5.08
2.54
2.54

TO·IS

G1+t.

=

~Bt~

J : '.--.+> , .L

90·' 5"'

~a=--'
--L~j
A

D

--.\~F

A
B
C
D

45·::'::5-

~

5

E

\'~:~I

V

E

"
.. gy

H

F
G

~J

H
J

INCHES
.178-.195 DIA.
.170-.210
.5 MIN.
.209-.230 DIA.
017 •.002 DIA.
'
.001 DIA,
,020 MAX.
.100'.010 DIA.
.041>.005
.028-,048

MILLIMETERS
4.52-4.95 DIA.
4.31-5.33
12.70 MIN .
5,31-5,84 DIA.
.432.

:~~

.508 MAX.
2.54'.254 DIA.
1.04'.127
.711-122

I'i

TO·33
A
B
C

'
"
,
·--=~'=1~~'11

~I

A

D
E
F
G
H
J
K

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TO·59

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1

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2A
THREAD

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON. MA 02173 • TEL. (617) 861-6540
TWX (710) 326-6509 • TELEX 95-1064

I E

r-

-+I

•
I..

, H

17·21

.017.

:gg~

1.5 MIN,
.018 MAX .
.031 ± .003
.200
.100
.029-.045
.100

mm
7.75-8.51
8.51-9.40
6.10-6.60
0.43'

:g~

38.10 MIN.
0.46 MAX.
0.79' .08
1.02
2.54
0.74-1.14
2.54

B
C
D
E

INCHES
.400- 455
.090-.150
.320-.468
.570-.763
.318 .380

MILLIMETERS
10,16-11.56
2.28-3.81
8.13 11.88
14.48-19.38
8.07-9.65

F

.055.g}g

G
H

.424-.437
.185-.215

1.40 ± :~~
10 77-11.10
4.70 5.46

A

G

ins.
305-.335
,335-.370
,240-.260

II

PRINTED IN U.S.A.

MECHANICAL SPECIFICATIONS
TO-66

H)cJ

A
B

rtJ'

r~+~,

t

M-

~r

c
D

.E
F

-K

L

G
H

J
K
L
M

ins.
.620 MAX.
.050-.075
.250-.340
.360 MIN.
.028-.034 DIA.
.958-.962
.570-.590
. 145 MAX. RAD.
.142-.152 DIA.
.350 MAX. RAD.
.190-.210
.093-.107

mm.
15.75 MAX.
1.27-1.90
6.35-8.63
9.14 MIN .
.7U-0.863
24.33-24.43
14.47-14.98
3.68 MAX. RAD .
3.60-.386 DIA .
8.89 MAX. RAD .
4.82-5.33
2.36-2.72

TO-66 (3 PIN)
ins.

.

A
B

C

I~'
'~, ~~

C

,~

F

D

E
F

1 ....... 1

1

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G

H

J

K

K
L
M

mm.

.250-.340
.620 MAX.
.050-.075
.028-.034
.360 MIN.
.958-.962
.190-.210
.190-.210
350 MAX. RAD.
.570-.590
.142-.152
.145 MAX. RAD.

6.35-8.64
15.75 MAX .
1.27-1.91
0.71-0.86
9.14 MIN.
24.33-24.43
4.83-5.33
4.83-5.33
8.89 MAX. RAD.
14.48-14.99
3.61-3.86
3.68 MAX. RAD .

ins.
.620 MAX.
050-.075
.028-.034
.958-.962
.190-.210
.190-.210
.350 MAX. RAD.
.570-.590
. 142-.152 DIA.
.360 MIN.
.250-.340

15.75 MAX .
1.27-1.91
0.71-0.86
24.33-24.43
4.82-5.33
4.82-5.33
8.89 MAX. RAD.
14.48-14.99
3.61-3.86 DIA.
9.14 MIN .
6.35-8.64

TO-66 (4 PIN)

B
--lI-

A

F

.~.

B
C

CD

: I,
it -..,
r
,

L

-

G

E

or- -.l
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D

D

1

F

H

G

CD

H

J

J
K
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mm.

TO-92

D

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=
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=
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;

t

A

j

----

B

C

I~

UNITRODE CORPORATION - 5 FORBES ROAD
LEXINGTON, MA 02173 - TEL. (617) 861·6540
TWX (710) 326-6509 • TELEX 95-1064

A
B

C
D

E
F
G

H

J

17-22

tnl.
.135 MIN.
.170-.210
.500 MIN.
.016-.019
.175-.205
.125-.165
.080-.105
.095-.105
.045-.055

mm.
3.42 MIN .
4.31-5.33
12.70 MIN.
.406-.482
4.44-5.~1

3.17-4.19
2.03-2.66
2.41-2.66
1.14-1.40

PRINTED IN

d
.J
u.S;

MECHANICAL SPECIFICATIONS
TO·111

inl.

B~

:~1 \

10-32- NF-2A

THREAD

B

c
0
E
F
G

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rr-

t

.400-.455
.090-.250
.320-.468
.570-.763
.065-.090
.313-.318
.070-.090
.423-.438
.135 .215

A

[]

'-

H

J

mm.
10.16-11.55
2.28-6.35
8.13-11.88
14.48-19.38
1.65-2.28
7.95-8.07
1.77-2.28
10.74-11.12
3.43-5.46

G/

TO·204AA (TO·3)
A

F~M

~t1b'
C

B

C
0
E
F
G

!~I~~
j
I~
H

I

0

H

L

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J
K
L
M

I--

D

K

TO·204AE (TO·3 MODIFIED)

inl.
.875 MAX.
. 135 MAX.
.250-.450
.312 MIN.
.038-.043 DIA.•
. 188 MAX. RAD.
1.177-1.197
.655 .675
.205-.225
.420-.440
.525 MAX. RAD.
.151-.161DIA.

mm.
22.23 MAX .
3.43 MAX .
6.35-11.43
7.92 MIN .
0.97-1.09 DIA.'
4.78 MAX. RAD.
29.90-30.40
16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAD.
3.84-4.09 DIA.

22.22\0.815)
3.42

lB~ !g.;~
!.

I::::::l .
MAX. CIA.

1O.13SI MAX

~~-lEATING
T
PLANE

:::~:g:::~:DIA -11-

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TWO FLACES

TWO PLACES

26.61
1-!I.050lMAX.

lil IK:!iI CIA "

r----,.::

TWO PlACES

1c~~SOURce

v- -.\ IHlllml'J

39."

;$I p<""V\ . TlOAD 11.19"11.",)"".
BE1f.l7'I1

~

GATE

-H
-

Dimensions in inches and (millimeters)

J

I

r~.~:mi3~t
r-IU~m1mt

t MEASURED AT SEATING PLANE

TO·205AD (TO·39)

"Jl

E_

~

45°

.(

.

.017'

G

.200
.100
.031±.003
.029-.045
.100

H

~L

'NITRODE CORPORATION· 5 FORBES ROAD
EXINGTON, MA 02173 • TEL. (617) 861·6540
'WX (710) 326-6509 • TELEX 95-1064

F

B

,.j1
';cit
I --1, ---~ ~H~'.:JlL~=~EErj:
A

C
0
E

Ins.
350 .370
.315- 335
.240-.260
mO-.Q30
.5 MIN.

A

J
K
L

17-23

:88f

mm.
8.89-9.39
800 8.51
6.35-6.60
.25-.76
12.70 MIN.

.432'

II

:~~

5.08
2.54
.79'.08
.74-1.14
2.54

PRINTED IN U.S.A.

MECHANICAL SPECIFICATIONS
TO-220AB

SEATING
PLANE

DIM
A

B
C

o
F
G

MILLIMETERS
MIN
MAX
1423

966
J 56
051
3531
229

H
J

038

I<

l

1270
II.

N

483

Q

254

R
S
T

204
114
585

INCHES
MIN
MAX

1587

0560

1066
482
114
3733
279
filS
064
1427
177
53J
304
292
1]9
685

0380
0140
0020
0139
0090

0625
0420
019('
0045

0147
0110
0250

001S

0025

0500
0045

0562
0070

0190

02'10

0100

0120

0080
0045
0230

0055
0270

0115

TO-220AC
DIM
A

•

C

0
F

G
H

J
K

L

N
Q

R

S
T

....
....3." .... '.310 .....
.....
.....
.... ..... .....
'.31 ...
..... .....
.....
'.120
....'.54 ....3." .....
.....
..... .m

MIL.LlMITIR.
MIH
MAX
l'U3 15."

INCHII
MIH

0.5&0 '

10.66

Uta

0,140

0.51

3.531

1.14
3.733

0.045

0139

0.147

O.UO

2.79

6.35

0.015

12.70

14.27

1.14

1.71

4.13

5,33

0.045
0.110

I

'~70

UIO

0.100

o.U5

1.14
5.15

1.39

0.0"

6.15

V (15 PIN SIP)
220
2185

'f

'1J'10
~ ~ rr;-775
C'\J

~

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~lI'_f _
; ±

......

Il'l

~1

175

I

I

......

I

it

28

!_,1V378-382

lAY
I

DimenSions

UNITRODE CORPORATION. 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95-1064

17-24

In

mIllimeters

PRINTED IN U.,S .•

SALES OFFICES

18-1

18-2

SALES OFFICES

[11J UNITRDDE
UNITRODE REGIONAL OFFICES
Eastern Area Office, Door 8 - Lakeside Office Park, North Avenue, Wakefield, MA 01880, Tel. (617) 245-3010,
TWX 710-348-1733
Metropolitan New York Office, 150 Broadhollow Road, Suite 210A, Melville, NY 11747, Tel. (516) 271-3110, 11,
TWX 510-226-6997
Southeast Office, 8001 North Dale Mabry Highway, Suite 80lD, Tampa, FL 33614, Tel. (813) 932-5807,
TWX 810-876-0886
Mid-America Area Office, 121 South Wilke Road, Suite 103, Arlington Heights, IL 60005, Tel. (312) 394-5240,
TWX 910-233-0168
South Central Office, 13999 Goldmark, Suite 460, Dallas, TX 75240, Tel. (214) 231-8700, TWX 910-867-4738
North Central Office, 3131 S. Dixie Drive, Suite 507, Dayton, OH 45439, Tel. (513) 294-1364, TWX 810-450-2645
Western Area Office, 5530 Corbin Avenue, Suite 328, Tarzana, CA 91356, Tel. (818) 705-8085, TWX 910-494-5964
Southwest Office, 15011 Parkway Loop, Suite F, Tustin, CA 92680, Tel. (714) 730-1077, TWX 910-595-1999
Northwest Office, 2444 Moorpark Avenue, Suite 314, San Jose, CA 95128, Tel. (408) 294-4210, TWX 910-338-0126
DOMESTIC REPRESENTATIVES
ALABAMA
Conley & Associates, Inc.
Huntsville
205-882-0316
ARIZONA
Compass Mktg. & Sales, Inc.
Phoenix
602-266-5400
ARKANSAS
See Texas
CALIFORNIA - NORTHERN
12 Inc.
Santa Clara
408-988-3400
CALIFORNIA - SOUTHERN
Centaur Corp.
Irvine
714-261-2123
Centaur Corp.
San Diego
619-571-7871
Centaur Corp.
Woodland Hills
818-704-1655
COLORADO
Component Sales, Inc.
Denver
303-759-1666
CONNECTICUT
Kanan Associates
Yalesville
203-265-2404
DELAWARE
See Pennsylvania-Eastern
DISTRICT OF COLUMBIA
:;ee Maryland

FLORIDA
Conley & Associates, Inc.
Oviedo
305-365-3283
Conley & Associates, Inc.
BQ(;a Raton
305-395-6108
Conley & Associates, Inc.
Tampa
813-885-7658
GEORGIA
Conley & Associates, Inc.
Doraville
.
404-447-6992
IDAHO
See Washington
ILLINOIS - NORTHERN
Oasis Sales Corp.
Elk Grove Village
312-640-1850
ILLINOIS - SOUTHERN
See Missouri
INDIANA
Shamrock Associates
Carmel
317-848-5265
IOWA
See Minnesota

MAINE
See Massachusetts
MARYLAND
New Era Sales, Inc.
Severna Park
301-544-4100
MASSACHUSETTS
Kanan Associates
Reading
617-944-8484
Byrne Associates, (DEC only)
Marard
61 -897-3131
MICHIGAN
Miltimore Sales, Inc.
Novi
313-349-0260
Miltimore Sales, Inc.
Grand Racids
616-942- 721
MINNESOTA
Aldridge Associates
Eden Prairie
612-944-8433
MISSISSIPPI
See Alabama
MISSOURI
Rush & West Associates
Ballwin
314-394-7271

KANSAS
Rush & West Associates
Olathe
913-764-2700

MONTANA
See Colorado

KENTUCKY
See Ohio

NEBRASKA
See Missouri

LOUISIANA
See Texas

UNITRODE CORPORATION. 5 FORBES ROAD LEXINGTON, MA 02173. TEL. (617) 861-6540 TWX (710) 326-6509. TELEX 95-1064

18-3

II

SALES OFFICES
DOMESTIC REPRESENTATIVES (Continued)
NEVADA - NORTHERN

OHIO

VERMONT

See California - Northern

Baehr, Greenleaf &
Associates, Inc.
Dayton

See Massachusetts

NEVADA - SOUTHERN
See Arizona

NEW HAMPSHIRE

513·439·0724
Baehr, Greenleaf &
Associates, Inc.
Cleveland

VIRGINIA
. See Maryland

WASHINGTON

See Massachusetts

216·221·9030

Jas. J. Backer Company
Seattle

NEW JERSEY - NORTHERN

Baehr, Greenleaf &
Associates, Inc.
Columbus

WEST VIRGINIA

T.A.M., Inc.
Fairfield

201·575·4390

614-486·4046

NEW JERSEY - SOUTHERN

OKLAHOMA

See Pennsylvania - Eastern

See Ohio

WISCONSIN

See Texas

Oasis Sales Corp.
Brookfield

NEW MEXICO

OREGON

Compass Mktg. & Sales, Inc.
Albuquerque

Jas. J. Backer Company
Portland

505·292·7377
NEW YORK - METROPOLITAN
AND LONG ISLAND

206·285·1300.

414·782·6660

503·297·8744

WYOMING
See Colorado

Jas. J. Backer Company
Salem

503·362·0717

CANADA
Kaytronics Limited
Quebec

T.A.M., Inc.
South Hauppauge

PENNSYLVANIA - EASTERN

516·348·0800

Omni Sales
Erdenheim

NEW YORK - UPSTATE

215·233-4600

Reagan/Compar Albany, Inc.
Albany

PENNSYLVANIA - WESTERN

518·489·7408

See Ohio

Reagan/Compar Albany, Inc.
New Hartford

604·581·7611

RHODE ISLAND

315· 732 ·3775

See Massachusetts

Kaytronics Limited.
Kanata, Ontario

Reagan/Compar Albany, Inc.
Fairport

SOUTH CAROLINA

716·271·2230

See North Carolina

Reagan/Compar Albany, Inc.
Endwell

SOUTH DAKOTA

607·723·8743

See Minnesota

Kaytronics Limited
Concord, Ontario

416·669·2262

Reagan/Compar Albany, h'lc.
Endwell

TENNESSEE

607·754·8946

See Georgia

NORTH CAROLINA

TEXAS

Conley & Associates, Inc.
Raleigh

Sundance Sales, Inc.
Dallas

919·876·9862
NORTH DAKOTA
See Minnesota

514·367·0101

Kaytronics Limited
Surrey

613·592·6606

214·699·0451
Sundance Sales, Inc.
Austin

512·250·0284
512·250·0320
UTAH

Component Sales, Inc.
Salt Lake City

801-466·8623

UNITRODE CORPORATION. 5 FORBES ROAD LEXINGTON, MA 02173. TEL. (617) 861·6540 TWX (710) 326·6509. TELEX 95·1064

18·4

SALES OFFICES
DOMESTIC DISTRIBUTORS
ALABAMA
Hall-Mark/Huntsville

COLORADO
Arrow Electronics/Aurora

205-837-8700

303-696-1111

Hamilton/ AvnetiHuntsville

Hamilton/ AvnetiEnglewood

205-837-7210
ARIZONA
Hamilton/ AvnetiTempe

602-275-5100
Wyle Distribution/Phoenix

301-247-5200

303-740-1000
Wyle Distribution/Thornton

303-457-9953
CONNECTICUT
Arrow Electronics/Wallingford

203-265-7741

CALIFORNIA - NORTHERN
Arrow Electronics/Sunnyvale

203-797-2800

408-745-6010

FLORIDA
Arrow Electronics/Palm Bay

408-734-3020
Hamilton/ AvnetiSacramento

916-920-3150
Hamilton/ AvnetiSunnyvale

408-743-3355

Hall-Mark/Columbia

301-988-9800

602-249-2232

Capsco Sales/Sunnyvale

MARYLAND
Arrow Electronics/Baltimore

Hamilton/ Avnet/Danbury

Hamilton/ AvnetiColumbia

301-995-5000
301-995-3500
MASSACHUSETTS
Arrow Electronics/Woburn

617-933-8130

HamiltonlAvnetiWoburn

305-725-1480

617-935-9700
Lionex Corporation/Burlington

617-272-9400
Zeus Components/Burlington

Arrow Electronics/Ft. Lauderdale

617-273-0750

Hall-Mark/Ft. Lauderdale

305-971-9280

MICHIGAN
Arrow Electronics/Ann Arbor

305-776-7790

Hall-Mark/Orlando

313-971-8220

408-727-2500

305-855-4020

Hamilton/ AvnetiGrand Rapids

Zeus Components/Sant Clara

Hamilton/ AvnetiFt. Lauderdale

616-243-8805

Wyle Distribution/Santa Clara

408-727-0714

305-971-2900

Hamilton/AvnetiLivonia

CALIFORNIA - SOUTHERN
Arrow Electronics/Chatsworth

Hamilton/ AvnetiSt. Petersburg

313-522-4700

813-576-3930

MINNESOTA
Arrow Electronics/Edina

213-701-7500
Arrow Electronics/Newport Beach

GEORGIA
Arrow Electronics/Norcross

612-830-1800

714-838-5422

404-447-7500

Hall-Mark/Bloomington

Arrow Electronics/San Diego

Hall-Mark/Norcross

612-854-3223

619-565-4800

404-447-8000

Hamilton/AvnetiMinnitonka

Avnet Electronics/Costa Mesa

Hamilton/ AvnetiNorcross

612-932-0600

714-754-6111

404-447-7500

Avnet Electronics/Chatsworth

ILLINOIS
Arrow Electronics/Schaumburg

213-700-6271
Hamilton/ AvnetiSan Diego

619-571-7510
Hamilton Electro Sales/Costa Mesa

714-641-4152
Hamilton Electro Sales/Culver City

213-558-2121
Wyle Distribution/EI Segundo

213-322-8100

MISSOURI
Arrow Electronics/St. Louis

314-567-6888

312-893-9420

Hall-Mark/Earth City

Hall-Mark/Bensenville

314-291-5350

312-860-3800

Hamilton/ AvnetiEarth City

Ha m iIton/ Avnetl Bensenvi lie

314-344-1200

312-860-8523
INDIANA
Arrow Electronics/Indianapolis

NEW HAMPSHIRE
Arrow Electronics/Manchester

603-668-6968

Wyle Distribution/Irvine

317-243-9353

Wyle-MIL-Irvine

317 -844-9333

NEW JERSEY - NORTHERN
Arrow Electronics/Fairfield

KANSAS
Hall-Mark/Lenexa

201-575-3390

913-888-4747

Lionex Corporation/Fairfield

Hamilton/ AvnetiOverland Park

201-227-7960

714-863-9953

714-851-9958
Wyle Distribution/San Diego

619-565-9171
Zeus Components/Anaheim

714-632-6880

Hamilton/Avnet/Carmel

201-797-5800

Hamilton/ AvnetiFairfield

913-888-8900

UNITRODE CORPORATION. 5 FORBES ROAD LEXINGTON, MA 02173. TEL. (617) 861-6540 TWX (710) 326-6509. TELEX 95-1064

18-5

III

SALES OFFICES
DOMESTIC DISTRIBUTORS (Continued)
NEW JERSEY - SOUTHERN
Arrow Electmnics/Moorestown

Hamilton/AvnetiDayton

215-928-1800

513-433-0610

Hall-Mark/Cherry Hill

Hamilton/ AvnetiWestervilie

609-424-7300

WISCONSIN
Arrow Electronics/Oak Creek

414-764-6600

Hall-Mark/Oak Creek

614-436-5851

414-761-3000

609-424-0110

OKLAHOMA
Hall-Mark/Tulsa

414-784-4510

NEW MEXICO
Arrow Electronics/ Alburquerque

918-665-3200

Hamilton/ AvnetiCherry Hill

505-243-4566

Hamilton/ Avnetl Alburquerque

505-765-1500

NEW YORK
Arrow Electronics/Melville

516-391-1300
Arrow Electronics/Hauppauge

OREGON
Hamilton/ AvnetiLake Oswego

503-635-6626 .

604-438-5545

Hamilton/AvnetiMontreal

TEXAS
Arrow Electronics/Austin

Hamiiton/AvnetiMelville

512-835-4180

516-454-6060

Arrow Electronics/Dallas

Hamilton/ AvnetiRochester

214-386-7500

Arrow Electronics/Houston

Hamilton/Avnet/Syracuse

713-530-4700

Lionex Corporation/Hauppauge

512-258-8848

Arrow Electronics/Winston-Salem

919-725-8711
Hall-Mark/Raleigh

919-872-0712
Ha m ilton/ AvnetiRaleigh

919-829-8030
OHIO
Arrow Electronics/Centerville

513-435-5563

Arrow Electronics/Solon

216-248-3990

Hall-Mark/Cincinnati

513-563-5980
Hall-Mark/Cleveland

216-473-2907

Hall-Mark/Dallas

214-343-5000

Hall-Mark/Houston

713-781-6100
Hamilton/ Avnetl Austin

512-837-8911

Hamilton/ AvnetiHouston

713-780-1771

Hamilton/Avnetllrving

214-659-4111

Lenert Co" Inc'/Houston

713-225-1465

Zeus Components/Dallas

214-783-7010
UTAH
Hamilton/AvnetiSalt Lake City

801-972-2800

Wyle Distribution/Salt Lake City

801-974-9953

WASHINGTON
Arrow Electronics, Inc'/Bellevue

206-643-4800

Hamilton/ AvnetiCleveland

206-643-3950

216-831-3500

416-677-7432

Hal'-Mark/ Austin

Hall-Mark/Westerville

614-891-4555

Hamilton/AvnetiNepean

613-226-1700

Hamilton/AvnetiToronto

716-475-9130

919-876-3132

Hamilton/AvnetiCalgary

514-331-6443

Arrow Electronics/Rochester

NORTH CAROLINA
Arrow Electronics/Raleigh

Future Electronics/Vancouver

403-230-3586

Lionex/Horsham

716-275-0300

914-937-7400

Future Electronics/Point Claire

PENNSYLVANIA
Arrow Electronics/Monroeville

215-443-5150

516-273-1660

Future Electronics/Ottawa

514-694-7710

Arrow Electronics/Liverpool

Zeus Components/Port Chester

416-663-5563

503-640-6000

412-856-7000

315-437-2641

CANADA
Future Electronics/Downsview

613-820-8313

Wyle Distribution/Hillsboro

516-231-1000

315-652-1000

Hamilton/ AvnetiNew Berlin

Hamilton/ AvnetiBelievue

Wyle Distribution/Bellevue

206-453-8300

UNITRODE CORPORATION. 5 FORBES ROAD LEXINGTON, MA 02173 • TEL (617) 861-6540 TWX (710) 326·6509 • TELEX 95·1064

18-6

SALES OFFICES

~UNITRDDE
UNITRODE SALES OFFICES

Corporate International and Asian Regional Sales Office, 5 Forbes Road, Lexington, MA 02173 Tel. (617) 861-6540,
Telex 95-1064
Unitrode Electronics GmbH, Hauptstrasse 68, 8025 Unterhaching, West Germany Tel. 089/619004/05/06,
Telex 841-05-22-109
Unitrode (U.K.) Limited, 6 Cresswell Park, Blackheath, London SE3 9RD, United Kingdom Tel. 01-318-1431/4,
Telex 896270
Unitrode S.R.L., Via Dei Carracci, 5,20149 Milano, Italy Tel. 431 831,434604, Telex 310085 UNITRD I
Unitrode·lreland, Ltd., Industrial Estate, Shannon, County Clare, Ireland Tel. 353-61-62377, Telex 26233
INTERNATIONAL AGENTS - DISTRIBUTORS
AUSTRALIA
VSI Electronics (Australia) Pty. Ltd.
P.O. Box 578
Crows Nest N.SW. 2056
Tel: 439-4655
TELEX: 22846
AUSTRIA
Dahms Elektronik
Gumpendorfer Strasse 16122
A-1060 Vienna
Tel: (0222) 57-25-77
TELEX: 134583
Dahms Elektronik
Wienerstrasse, 287
1-8051 Graz
Tel: (0316) 64.0.30
TELEX: 031099
BELGIUM
J.P. Lemaire
Limburg Stirum 243
1810 Wemmel
Tel: 478 73-08
TELEX: 846-24610
BRAZIL
Cosele Ltda.
Rua Da Consolacao, 867-Cj. 22
01301 Sao Paulo
Tel: 255-1733, 259-3719
TELEX: 30869, CSEL BR
DENMARK
Ditz Schweitzer A/S
Vallensbaekvej 41
DK-2600 Glostrup
Tel: 2-45 30 44
TELEX: 855-33257
EASTERN EUROPE
Dahms Elektronik
Wienerstrasse, 287
1-8051 Graz
rei: (0316) 64.0.30
TELEX: 031099
'INLAND
urion Oy
Iynikintie 5K
)0710 Helsinki 71
,I: 80-372144
LEX: 124388

FRANCE
C.C.I.
Zone Industrielle
5, Rue Marcelin Berthelot
92160 Antony Cedex
Tel: (01) 666 21-82
TELEX: LORESOL 203 881F
203 141F
C.C.I.
67, Rue Bataille
69008 Lyon
Tel: (07) 874 44-56
Spetelec
Tour Europa 111
94532 Rungis Cedex
Tel: (1) 686.56.65
TELEX: 842-250801
GERMANY
Unitrode Electronics GmbH
Hauptstrasse 68
8025 Unterhaching
Tel: 089/6190 04105/06
TELEX: 841-05-22-109
EBV Elektronik GmbH
Oberweg 6
8025 Unterhaching
Tel: (089) 611051
TELEX: 524535
EBV Elektronik GmbH
Oststrasse 129
4000 Duesseldorf
Tel: 0211-84-84-6/7
TELEX: 08587267
EBV Elektronik GmbH
Schenckstrasse 99
6 Frankfurt/Main 90
Tel: 0611 785037
TELEX: 413590
EBV Elektronik GmbH
Kiebitzrain 18
3006 Burgwedel 1
Tel: 05139/5038
TELEX: 0923694

Metronik GmbH
Kapellenstrasse 9
8025 Unterhaching
Tel: 089-6114063
TELEX: 0529524
Metronik GmbH
Siemenstr. 4-6
6805 Heddesheim
Tel: 06203-4701
TELEX: 465035
Metronik GmbH
Vogelsgarten 1
8500 Nuremberg
Tel: 0911/46 80 66-67
Frehsdorf KG
Postfach 1244
Carl-Zeiss-Strasse 3
Tel: 04106-71058
TELEX: 0213693
HONG KONG
CET, Ltd.
1402 Tung Wah Mansion
199-203 Hennessy Road
Wanchai
Tel: 5-729376
TELEX: 85148 CET HX
INDIA
Sujata Sales and
Exports Ltd.
112 Bajaj Bhavan
11th Floor
Nariman Point
Bombay 400 021
Tel: 234658
TELEX: 011-3855
IRELAND
New England Technical Sales Ltd.
Stonehaven, Dublin Road
Malahide, Co. Dublin
Tel: (01) 450-635
TELEX: 31407

EBV Elektronik GmbH
Alexanderstrasse 42
7000 Stuttgart 1
Tel: 0711124 74 81
TELEX: 0722271

UNITROOE CORPORATION. 5 FORBES ROAD LEXINGTON, MA 02173. TEL. (617) 861·6540 TWX (710) 326-6509 • TELEX 95-1064

18-7

SALES OFFICES
INTERNATIONAL AGENTS-DISTRIBUTORS

ISRAEL

NEW ZEALAND

UNITED KINGDOM

S.T.G. International, Ltd.
10 Huberman Street
P.O. Box 1276
Tel-Aviv 61012
Tel: 03-248231
TELEX: 922-342229

Professional Electronics
22 A Milford Road
Auckland
Tel: 493-029, 499-048
TELEX: NZ21084

Unitrode (U.K.) Limited
6 Cresswell Park
Blackheath London SE3 9RD
Tel: 01-318-1431/4
TELEX: 896270
The House of Power
Electron House
Cray Avenue, St. Mary Cray
Orpington, Kent BR5 3QJ
Tel: 0689 7153117
TELEX: 896141
Candy Electronic Components
Old Mill Lane
Aylesford
Maidstone, Kent ME20 TDT
Tel: 0622-70774/5
TELEX: 965998
Thame Components Ltd.
Thame Park Road
Thame, Oxon OX9 3XD
Tel: 084-421-4561
TELEX: 837917
Nortronic Associates, Ltd.
Gateway, Crewe Gates Industrial Estate
Crewe CW1 1YY
Tel: 0270 586161
TELEX: 36509

NORWAY

ITALY
Unitrode S.R.L.
Via Dei Carracci, 5
20149 Milano
Tel. 431-831
Tel. 434-604
TELEX: 310085 UNITRO I
Microelit, S.R.L.
Via Paolo Uccello 8
20148 Milano
Tel. (02) 469 0444
TELEX: 334-284 MICROIT
Microelit, S.R.L.
Via Nicola Marchese 10 Int. F1
00100 Roma
Tel. (06) 898243
TELEX: 616104

JAPAN
Hamilton/Avnet Electronics Japan Ltd.
Yu & You Building
1-5-7 Horidome-Cho, Nihonbashi
Chuo-Ku, Tokyo 103
Tel: 03-662-9911
TELEX: 252-3774 HAELTK J
Hamiiton/Avnet Electronics Japan Ltd.
Ana Building
1-10-10 Nishi-Honcho, Nishi-Ku
Osaka 550
Tel: 06-533-5855
Rikei Corporation
Shinjuku Nomura Bldg.
1-26-2 Nishi-Shinjuku
Shinjuku-Ku
Tokyo 160
Tel: Tokyo (03) 345-1411
TELEX: J24208, J23772 .
Cable Address: "RIKEIGOOO" Tokyo

KOREA R.O.K.
Duksung Trading Co.
P.O. Box 31 Nam-Seoul,
Room 301 Jinwon Bldg.
507-30 Sinrim 4-Dong.
Gwanak-Ku
Tel: 854-5047
TELEX: K23459 Duksung Seoul

NETHERLANDS
Koning en Hartman
Elektrotechniek B.V.
2544 En The Hague
30 Koperwerf
Tel: 70-210101
TELEX: 31528

Neco A/S
P.O. Box 81, Kaldbakken
Oslo 9
Tel: (02) 25-93-10
TELEX: 856-19247

SINGAPORE
Oynamar International Ltd.
Suite 05-11
12, Lorong Bakar Batu
Kolam Ayer Industrial Estate
Singapore 1334
Tel: 7476188
TELEX: RS26283 Dynama

SOUTH AFRICA
Electrolink (Pty) Ltd.
Fleetway House
Martin Hammerschlag Way
Foreshore, Capetown
Tel: 215350
TELEX: 57-27320

SPAIN
Monolithic SA
Corcega, 167
Barcelona - 36
Tel: 321-7347
TELEX: 51990

SWEDEN
AB Betoma
Box 3005
S-l71 03 Solna
Tel: 08 820280
TELEX: 854-19389
Fertronic AB
Snoermakarvaegen 35
Box 56
161 26 Bromma
Tel: 08252610
TELEX: 11181

SWITZERLAND
Elkom AG
Oorfstrasse 12
CH-5624 Buenzen
Tel:57-362191
TELEX: 57302

TAIWAN
Dynamar International Ltd.
3rd FI., No. 43, Yih Chiang St.
Taipei, R.O.C.
Tel: (02) 541-8251
TELEX: 11064

UNITRODE CORPORATION. 5 FORBES ROAD LEXINGTON, MA 02173. TEL (617) 861-6540 TWX (710) 326·6509 •. TELEX 95-1064

18-8

NOTES

;ITRODE CORPORATION. 5 FORBES ROAD
'-INGTON, MA 02173 • TEL, (617) 861-6540
,( (710) 326-6509 • TELEX 95-1064

PRINTED IN U.S.A.

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MAIL TO:

Unitrode Corporation
5 Forbes Road
Lexington, MA 02173 U.S.A.
Attn: Advertising Manager

UNITRODE CORPORATION" 5 FORBES ROAD
LEXINGTON, MA 02173 • TEL. (617) 861·6540
TWX (710) 326·6509 • TELEX 95·1064

I',
'!
PRINTED IN U 5

~



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