1985_GE_Power_Transistors 1985 GE Power Transistors
User Manual: 1985_GE_Power_Transistors
Open the PDF directly: View PDF 
.
Page Count: 866
| Download | |
| Open PDF In Browser | View PDF |
POWER
TRANSISTORS
POWER MOSFETs
IGT™ TRANSISTORS
POWER BIPOLAR TRANSISTORS
POWER DARLINGTONS
Power Electronics Semiconductor Department
General Electric Company
Electronics Park
Syracuse, New York 13221
•
SEMICONDUCTOR
INTRODUCTION
The Power Electronics Semiconductor Department of the
General Electric Company acknowledges the efforts of all
contributing authors and editors of all editions of the General
Electric Power Transistor Manual.
The circuit diagrams included in this manual are intended merely for illustration of
typical semiconductor applications and are not intended as constructional information. Although reasonable care has been taken in their preparation to assure their
technical correctness, in the absence of an express written agreement to the contrary,
no responsibility is assumed by the General Electric Company for any consequences
of their use.
The semiconductor products, circuits, and arrangements disclosed herein may be
covered by patents of General Electric Company or others. Neither the disclosure of
any information herein nor the sale of semiconductor products by General Electric
Company conveys any license under patent claims covering combinations of
semiconductor products with other products or elements. In the absence of an
express written agreement to the contrary, General Electric Company assumes no
liability for patent infringement arising out of any use of semiconductor products with
other products or elements by any purchaser of semiconductor products, or by
others.
Copyright® 1985
by the
General Electric Company, U.S.A.
Power Electronics Semiconductor Department
Syracuse, New York 13221
ii
TABLE OF CONTENTS
GE POWER MOSFETs &IGr M TRANSISTORS
PRODUCT MATRIX .................................................................................................... 2
POWER MOSFET SELECTOR GUIDE ................................................................................ 4
IGT'M SELECTOR GUIDE .............................................................................................. 13
POWER MOSFET CROSS REFERENCE ............................................................................. 14
GE BIPOLAR POWER TRANSISTORS
SELECTOR GUIDE ...................................................................................................... 32
POWER TRANSISTOR INDEX ................................................................................................. 45
1. POWER TRANSISTOR TERMS. SYMBOLS &DEFINITIONS
1.1 MOS-GA TED TRANSISTORS ..................................................................................
1.1.1 General Terms and Conditions .............................................................................
1.1.2 Letter Symbols, Terms and Definitions-MOSFETs ................................................... '. , ...
1.1.3 Letter Symbols, Terms and Definitions-IGT'M ................................................. : ........... :.
1.2 JUNCTION TRANSISTORS, MULTIJUNCTION TyPES ............................. ; ......................
1.2.1 General Terms and Definitions ........................................... , .................................
47
47
48
53
57
57
2. RATINGS AND CHARACTERISTICS
2.1 POWER DISSIPATION AND THERMAL RATINGS ........................................................
2.1.1 Power Dissipation vs Temperature .................... " ............. '......................................
2.1.2 Thermal Resistance .........................................................................................
2.1.3 Transient Thermal Response .................................................................................
2.1.4 Use of Thermal Compounds and Insulators ...............................................................
2.1.5 Surface Finish .................................................................................................
2.2 DIODES ......................... '.' : ..............................................................................
2.2.1 Diode Capacitances. '. :.................................. , ....................................................
2.2.2 Reverse Recovery Time .................................................................•..................
2.2.3 Forward Recovery Time ...................................................................................
2.2.4 Control of Minority Carrier Lifetime by Gold or Platinum Diffusion, or by Electron Irradiation ........
2.2.5 Epitaxial Growth of Silicon ................................................................................
2.3 BIPOLAR TRANSISTORS ......................................................................................
2.3.1 Voltage Ratings ............................................................................................
2.3.2 Current Ratings ............................................................................................
2.3.3 Cut-off Currents ............................................................................................
2.3.4 DC Current Gain ...........................................................................................
2.3.5 Saturation Voltages ........................................................................................
2.3.6 Switching Characteristics .... '...............................................................................
2.3.7 Forward Bias Safe Operating Area (FBSOA) ..............................................................
2.3.8 Reverse Bias Safe Operating Area (RBSOA) ..............................................................
2.4 MOSFET TRANSISTORS .......................................................................................
2.4.1 Power MOSFET Structure ................................................................................
2.4.2 Blocking Characteristics ....................................................................................
2.4.3 Transconductance (gfs) .....................................................................................
2.4.4 On Resistance rDS(on) ......................................................................................
2.4.5 Breakdown Voltage Vs rDS(ON) ............................................................................
2.4.6 Input and Output Capacitance .............................................................................
2.4.7 Gate Charge ................................................................................................
2.4.8 Switching Characteristics ...................................................................................
2.4.9 Rated Continuous Current and Peak Current ..................... i' ......................................
2.4.10 Ruggedness .................................................................................................
2.4.11 The Parasitic Diode ........................................................................................
2.4.12 Forward Bias Safe Operating Area (FBSOA) ..............................................................
2.4.13 Switching Safe Operating Area (SSOA) ...................................................................
2.4.14 Handling Considerations ...................................................................................
iii
71
71
72
72
73
73
73
74
74
75
77
78
78
79
79
79
79
80
81
81
82
84
85
86
86
86
87
87
88
89
89
89
91
91
91
91
2.5 INSULATED GATE BIPOLAR TRANSISTORS .............................................................
2.5.1 IGT'M Transistor Structure .................................................................................
2.5.2 Blocking Characteristics ................................................................................. , ..
2.5.3 Gate-to-Emitter Threshold Voltage ........................................................................
2.5.4 Transconductance (~s) .....................................................................................
2.5.5 On-State Voltage (VCE(sat») ....................•............................................................
2.5.6 Gate-to-Emitter Drive ......................................................................................
2.5.7 Switching Properties .......................................................................................
2.5.8 Equivalent Fall Time .......................................................................................
2.5.9 Controlling Current Fall Time .............................................................................
2.5.10 Forward Bias Safe Operating Area (FBSOA) ..............................................................
2.5.11 Turn-off Safe Operating Area ..............................................................................
2.5.12 Handling Considerations ...................................................................................
92
92
93
94
94
94
95
95
96
96
97
97
97
3. QUALITY AND RELIABILITY OF TRANSISTORS
3.1 QUALITy ......................................................................................................... 99
3.2 RELIABILITy ................................................................................................... 100
3.2.1 General Approach to Accelerated Testing ................................................................. 101
3.2.2 Reliability Prediction from Accelerated Tests to Application ............................................. 104
3.2.3 Plastic Encapsulated Power Transistors ................................................................... 106
3.2.4 Plastic Encapsulated Signal Transistors ................................................................... 114
3.3 RELATIVE HUMIDITy ........................................................................................ 115
3.4 STRESS SCREENING .......................................................................................... 117
3.5 TOTAL QUALITY CONTROL ................................................................................. 119
3.6 GENERAL CONCLUSIONS .................................................................................... 121
GE POWERMOS SPECIFICATIONS ........................................................................................... 125
IGrM TRANSISTOR SPECIFICATIONS ........................................................................................ 337
GE BIPOLAR SPECiFiCATiONS ........... .................................................................................... 371
MOUNTING AND HANDLING CONSIDERATIONS (For Surface Mounted Devices) ................................................... 840
MOUNTING AND ELECTRICAL TERMINATION PROCEDURES (For D66 &D67 Power Darlington Transistor Modules) ................. 845
GE POWER TRANSISTOR OUTLINE DRAWINGS ............................................................................... 846
PACKAGE ALTERNATIVES .................................................................................................. 855
GE REPRESENTATIVES SALES OFFICES ..................................................................................... 857
iv
GE
POWER MOSFET
&
IGT™ TRANSISTOR
PRODUCT MATRIX &
SELECTOR GUIDE
v
vi
HOW TO SPECIFY GE POWER MOS
DEVICES USING THIS MANUAL
Step 1: First, turn to the Product Matrix (next page). Look up the basic parameters of the device you want: its
voltage, current, RDSon and package. The Product Matrix Will supply the GE product number to look for in the
following Selector Guide tables. (How GE numbers its Power MOS devices is also explained in this section.)
Step 2: Now go to the Selector Guide Tables that immediately follow the Product Matrix. The Selector Guide tables are
arranged by package in ascending voltage. This will supply additional data about the device and the page number for the
corresponding spec sheet.
Step 3: Tum to the spec sheet; it's in the section that begins on Page 125. Here you will find complete performance and
rating information.
TO-220
TO-247
4 PIN DIP
TO-39
TO-237
TO-202
TO-204
GE POWER-MOS NUMBERING SYSTEM
EXAMPLE:
D
8
4
D
R
1
-~-!'-ITT'
~ELECTION
~----------VOLTAGE
i--------CHIP TYPE
PACKAGE (AND * POLARITY)
.....- - - POWER-MOS (8-FET. 9-IGT)
- - - - - - - - = G E POWER TRANSISTOR
*NOTE: EVEN NO'S N-CHANNEL, ODD NO'S P-CHANNEL
GE POWER-MOSFET PRODUCT MATRIX
~~
J::l:J
TYPE
MAX.
RATINGS
N-CHANNEL
BVDsS
4S0-S00
R14S0V
R2S00V
3S0-400
Q13S0V
Q2400V
ID
13A
8A
4.SA
2.SA
1SA
10A
S.SA
3.0A
1.SA
O.SA
30A
~
4 Pin DIP
TO-237
084EQ12
0840Q12
084CQ12
084BQ12
.SSO
1.00
1.80
3.60
084EM2
N2
0840M2
N2
084CM2
N2
084BM2
N2
2.5A
.4A
.8S0
1.S0
3.00
082CM2
N2
082BM2
N2
082AM2
N2
S.OO
080AM2
N2
.30
086FQ12
086EQ12
0860Q12
.30
.SSO
1.00
.40
086FM2
N2
086EM2
N2
0860M2
N2
.08S0
086FK2
L2
086EK2
L2
0860K2
L2
.OSSO
.180
.40
.80
1.S0
088FK2
L2
084EK2
L2
0840K2
L2
0840K2
L2
084BK2
L2
4.0A
082CK2
L2
082BK2
L2
082AK2
L2
.08S0
S.OO
8A
.SA
088FQ12
1.S0
14A
1A
.40
.8S0
1.S0
.80
27A
1.3A
086FR12
086ER12
0860R12
.180
40A
SO-100
K1S0V
K260V
L180V
L2100V
.40
088FM2
N2
SA
.8A
084ER12
0840R12
084CR12
TO-204
088FR12
082CQ1 2 1.8.0
9A
1.0A
TO-247
TO-220
18A
120-220
M1120V
M21S0V
N1180V
N2200V
~~ Q
.30
.60
2.40
080AK2
L2
2.40
.3A
2
.08S0
.180
.30
.60
.OSSO
.08S0
.180
GE INDUSTRY STANDARD POWER MOSFETs
~~
TYPE
MAX.
RATINGS
N-CHANNEL
10
BVoss
450-500
4 Pin DIP
~ ~P Q
~
TO-237
TO-39
TO-247
IRFP4S0
13A
SA
4.SA
2.SA
1.S0
IRFF430
IRFP3S0
1SA
350-400
IRFF330
1.00
1.SA
IRFF320
1.S0
9A
2.SA
D
E
F
H
VN
30,35
10,66,67
89
90,98,99
IRFD210
1.3A IRFD120
30V 1A IRFD110
60V .SA IRFD1Z0
80V .7A
90V
-
IRFS20
3.00
IRF740
IRF3S0
.SSO IRF340
1.S0
IRF710
3.60
IRF640
IRF2S0 .08S0
.1S0 IRF240 .1S0
IRF620
.SO
IRF610
IRFF210
1.S0
.30
.60
2.40 VN10KMA
IRFF130
.180
IRFF120
.30
IRFF110
.60
VN30ABA,AK* t
S.OO VN67ABA,AK* t
IVNSOOOANO 2.S0 VN89ABA* t
VN90,98,ABA,AK*t
*10 NOT APPLICABLE
t AVAILABLE IN TO-202 PACKAGE (AFA SUFFIX DESIGNATION)
3
0
1.00
IRF720
.400
IRFP1S0 O.OSSO
.30
1.00 IRF330
1.S0
IRFF230
IRFF220
40A
27A
40V 14A
60V
8A
80V
4A
100V
.SSO
1.S0
IRF630
SA
30-100
IVN
.401
IRFP2S0 O.OSSO
1SA
.6A
IRF4S0
.SSO IRF440
1.S0 IRF430
IRF730
3.0A
TO-204
IRFS40
IRFS30
0.30
10A
S.SA
30A
150-200
TO-220
0.40
.40 IRF230
.SO
.40
1.S0
IRF1S0 .OSSO
IRFS40 .08S0 IRF140 .08S0
IRFS30 .180 IRF130 .180
IRFS20
.30
IRFS10
.60
CASE STYLE
GEPOWER MOSFET SELECTOR GUIDE
10 (Amps)
VOS
(Volts)
25°C
100°C
ROS (ON)
(Ohms)
60
60
60
60
60
12.0
12.0
14.0
14.0
24.0
B.O
B.O
0.25
0.25
9.0
9.0
15.0
0.1B
60
60
60
60
60
27.0
27.0
31.0
33.0
40.0
17.0
17.0
20.0
20.0
25.0
0.OB5
0.OB5
O.OB
O.OB
60
100
100
100
100
40.0
12.0
14.0
14.0
14.0
25.0
B.O
0.055
0.25
9.0
9.0
9.0
0.1B
0.1B
0.1B
100
100
100
100
100
24.0
27.0
27.0
33.0
38.0
15.0
17.0
17.0
20.0
24.0
0.OB5
0.OB5
O.OB
100
100
150
150
150
40.0
40.0
25.0
25.0
5.0
5.0
6.0
150
150
150
150
150
9.0
16.0
B.O
B.O
9.0
1B.0
1B.0
25.0
150
150
150
200
200
25.0
30.0
30.0
200
200
200
200
200
9.0
9.0
16.0
B.O
6.0
10.0
11.0
11.0
16.0
16.0
19.0
19.0
5.0
6.0
0.18
0.11
0.055
0.11
0.055
0.055
0.055
0.60
0.60
0040
(Amps)
Po
(Watts)
GEType
Number
4B
25
56
56
96
75
75
75
75
125
IRF 133
2N6755
DB6DK2
IRF 131
IRF 143
127
1600
1600
3000
3000
3000
10B
10B
DB6EK2
IRF 141
2N6763
IRF 153
DB6FK2
129
129
60
132
160
125
125
150
150
150
3000
160
4B
56
56
30
150
75
75
75
75
IRF 151
IRF 132
DB6DL2
IRF 130
2N6756
133
127
125
125
132
70
125
125
125
150
150
IRF 142
IRF 140
DB6EL2
IRF 152
2N6764
131
129
129
135
160
160
32
12
36
150
150
75
75
75
IRF 150
DB6FL2
IRF 233
2N6757
DB6DM2
133
133
139
36
64
72
72
100
75
125
125
125
150
IRF 231
IRF 243
DB6EM2
IRF 241
IRF 253
137
143
141
141
147
50
120
120
32
15
150
150
150
75
75
2N6765
DB6FM2
IRF 251
IRF 232
2N675B
145
145
139
-
36
36
64
72
72
75
75
125
125
125
DB6DN2
IRF 230
IRF 242
DB6EN2
IRF 240
137
137
143
141
141
100
60
120
120
1B
150
150
150
150
75
IRF 252
2N6766
DB6FN2
IRF 250
IRF 333
147
145
145
151
7
22
22
32
40
75
75
75
125
125
2N6759
DB6DQ1
IRF 331
IRF 343
DB6EQ1
149
149
155
153
CISS
(pF)
BOO
BOO
BOO
BOO
1600
BOO
BOO
BOO
BOO
1600
1600
1600
3000
3000
3000
3000
BOO
BOO
800
0040
BOO
0.22
1600
1600
1600
3000
0.1B
0.1B
0.12
0.12
0.OB5
0.OB5
3000
3000
3000
0040
BOO
BOO
0040
0040
BOO
BOO
0.22
1B.0
1B.0
6.0
6.0
10.0
11.0
11.0
1600
1600
1600
200
200
200
200
350
25.0
30.0
30.0
30.0
4.5
16.0
19.0
19.0
19.0
3.0
0.12
1.5
BOO
350
350
350
350
350
4.5
5.5
5.5
3.0
3.5
3.5
5.0
6.0
1.5
1.0
1.0
BOO
BOO
BOO
O.BO
1600
1600
9.0
B.O
10.0
0.60
0.1B
0.1B
0.OB5
0.OB5
0.OB5
0.55
TO-204
3000
3000
3000
3000
Electrical characteristics @ 25°C unless otherwise specified.
4
10M
96
10B
10B
i
Page
125
125
131
135
133
-
-
137
-
-
CASE STYLE
TO-204
GE Power MOSFET Selector Guide (Cont.)
VOS
(Volts)
25°C
100°C
Ros (ON)
(Ohms)
CISS
(pF)
(Amps)
Po
(Watts)
GEType
Number
350
350
350
350
350
10.0
12.0
13.0
15.0
15.0
6.0
7.75
8.0
9.0
9.0
0.55
0.40
0.40
0.30
0.30
1600
3000
3000
3000
3000
40
20
52
60
60
125
150
150
150
150
IRF 341
2N6767
IRF353
D86FQ1
IRF 351
153
400
400
400
400
400
4.5
5.5
5.5
5.5
8.0
3.0
3.5
3.5
3.5
5.0
1.5
1.0
1.0
1.0
0.80
800
800
800
800
1600
18
22
22
8
32
75
75
75
75
125
IRF 332
D86DQ2
IRF330
2N6760
IRF342
151
149
149
400
400
400
400
400
10.0
10.0
13.0
14.0
15.0
6.0
6.0
8.0
9.0
9.0
0.55
0.55
0.40
0.30
0.30
1600
1600
3000
3000
3000
40
40
52
25
60
125
125
150
150
150
D86EQ2
IRF340
IRF 352
2N6768
D86FQ2
153
153
159
400
450
450
450
450
15.0
4.0
4.0
4.5
4.5
9.0
2.5
2.5
3.0
3.0
0.30
2.0
2.0
1.5
1.5
3000
800
800
800
800
60
16
6
18
18
150
75
75
75
75
IRF 350
IRF 433
2N6761
D86DR1
IRF 431
157
163
450
450
450
450
450
7.0
8.0
8.0
11.0
12.0
4.0
5.0
5.0
7.0
7.0
1.1
0.85
0.85
0.50
0.50
1600
1600
1600
3000
3000
28
32
32
20
48
125
125
125
150
150
IRF 443
D86ER1
IRF 441
2N6769
IRF 453
167
165
165
450
450
500
500
500
13.0
13.0
4.0
4.5
4.5
8.0
8.0
2.5
3.0
3.0
0.40
0.40
2.0
1.5
1.5
3000
3000
800
800
800
52
52
16
18
18
150
150
75
75
75
D86FR1
IRF 451
IRF 432
D86DR2
IRF 430
169
169
163
161
161
500
500
500
500
500
4.5
7.0
8.0
8.0
12.0
3.0
4.0
5.0
5.0
7.0
1.5
1.1
0.85
0.85
0.50
800
1600
1600
1600
3000
7
28
32
32
48
75
125
125
125
150
2N6762
IRF 442
D86ER2
IRF 440
IRF 452
167
165
165
171
500
500
500
12.0
13.0
13.0
7.75
8.0
8.0
0.40
0.40
0.40
3000
3000
3000
25
62
52
150
150
150
2N6770
D86FR2
IRF 450
169
169
10 (Amps)
10M
Electrical characteristics @ 25°C unless otherwise specified.
5
Page
159
157
157
155
-
157
161
161
-
171
-
-
CASE STYLE
GE Power MOSFET Selector Guide (Cont.)
Vos
(Volts)
10 (Amps)
25°C
100°C
TO-220
(Ohms)
C,ss
(pF)
10M
(Amps)
Po
(Watts)
GEType
Number
Page
ROS (ON)
60
60
60
60
60
3.5
4.0
4.0
7.0
8.0
2.0
2.5
2.5
4.0
5.0
0.80
0.60
0.60
0.40
0.30
150
150
150
400
400
14
16
16
28
32
20
20
20
40
40
IRF 513
D84BK2
IRF 511
IRF 523
D84CK2
175
173
173
179
177
60
60
60
60
60
8.0
12.0
14.0
14.0
24.0
5.0
8.0
9.0
9.0
15.0
0.30
0.25
0.18
0.18
0.11
400
800
800
800
1600
32
48
56
56
96
40
75
75
75
125
IRF 521
IRF 533
D84DK2
IRF 531
IRF 543
177
183
181
181
187
60
60
100
100
100
27.0
27.0
3.5
4.0
4.0
17.0
17.0
2.0
2.5
2.5
0.085
0.085
0.80
0.60
0.60
1600
1600
150
150
150
108
108
14
16
16
125
125
20
20
20
D84EK2
IRF 541
IRF 512
D84BL2
IRF 510
185
185
175
173
173
100
100
100
100
100
7.0
8.0
8.0
12.0
14.0
4.0
5.0
5.0
8.0
9.0
0.40
0.30
0.30
0.25
0.18
400
400
400
800
800
28
32
32
48
56
40
40
40
75
75
IRF 522
D84CL2
IRF 520
IRF 532
D84DL2
179
177
177
183
181
100
100
100
100
150
14.0
24.0
27.0
27.0
2.0
9.0
15.0
17.0
17.0
1.25
0.18
0.11
0.085
0.085
2.4
800
1600
1600
1600
150
56
96
108
108
8
75
125
125
125
20
IRF 530
IRF 542
D84EL2
IRF 540
IRF 613
181
187
185
185
191
150
150
150
150
150
2.5
2.5
4.0
5.0
5.0
1.5
1.5
2.5
3.0
3.0
1.5
1.5
1.2
0.80
0.80
150
150
400
400
400
10
10
16
20
20
20
20
40
40
40
D84BM2
IRF 611
IRF 623
D84CM2
IRF 621
189
189
195
193
193
150
150
150
150
150
8.0
9.0
9.0
16.0
18.0
5.0
6.0
6.0
10.0
11.0
0.60
0.40
0.40
0.22
0.18
800
800
800
1600
1600
32
36
36
64
72
75
75
75
125
125
IRF 633
D84DM2
IRF 631
IRF 643
D84EM2
199
197
197
203
201
150
200
200
200
200
18.0
2.0
2.5
2.5
4.0
11.0
1.25
1.5
1.5
2.5
0.18
2.4
1.5
1.5
1.2
1600
150
150
150
400
72
8
10
10
16
125
20
20
20
40
IRF 641
IRF 612
D84BN2
IRF 610
IRF 622
201
191
189
189
195
200
200
200
200
200
5.0
5.0
8.0
9.0
9.0
3.0
3.0
5.0
6.0
6.0
0.80
0.80
0.60
0.40
0.40
400
400
800
800
800
20
20
32
36
36
40
40
75
75
75
D84CN2
IRF 620
IRF 632
D84DN2
IRF 630
193
193
199
197
197
200
200
200
16.0
18.0
18.0
10.0
11.0
11.0
0.22
0.18
0.18
1600
1600
1600
64
72
72
125
125
125
IRF 642
D84EN2
IRF 640
203
201
201
Electrical characteristics@ 25°C unless otherwise specified.
6
CASE STYLE
TO-220
GE Power MOSFET Selector Guide (Cont.)
VOS
(Volts)
Ie (Amps)
25°C
100°C
RoS (ON)
(Ohms)
rOM
(Amps)
CISS
(pF)
Po
(Watts)
GE Type
Number
Page
350
350
350
350
350
1.3
1.5
1.5
2.5
3.0
0.8
1.0
1.0
1.5
2.0
5.0
3.6
3.6
2.5
1.8
150
150
150
400
400
5
6
6
10
12
20
20
20
40
40
IRF 713
084801
IRF 711
IRF 723
084C01
207
205
205
211
209
350
350
350
350
350
3.0
4.5
5.5
5.5
8.0
2.0
3.0
3.5
3.5
5.0
1.8
1.5
1.0
1.0
0.80
400
800
800
800
1600
12
18
22
22
32
40
75
75
75
125
IRF 721
IRF 733
084001
IRF 731
IRF 743
209
215
213
213
219
350
350
400
400
400
10.0
10.0
1.3
1.5
1.5
6.0
6.0
0.8
1.0
1.0
0.55
0.55
5.0
3.6
3.6
1600
1600
150
150
150
40
40
5
6
6
125
125
20
20
20
084E01
IRF 741
IRF 712
084802
IRF 710
217
217
207
205
205
400
400
400
400
400
2.5
3.0
3.0
4.5
5.5
1.5
2.0
2.0
3.0
3.5
2.5
1.8
1.8
1.5
1.0
400
400
400
800
800
10
12
12
18
22
40
40
40
75
75
IRF 722
084C02
IRF 720
IRF 732
084002
211
209
209
215
213
400
400
400
400
450
5.5
8.0
10.0
10.0
2.0
3.5
5.0
6.0
6.0
1.0
1.0
0.80
0.55
0.55
4.0
800
1600
1600
1600
400
22
32
40
40
8
75
125
125
125
40
IRF 730
IRF 742
084E02
IRF 740
IRF 823
213
219
217
217
223
450
450
450
450
450
2.5
2.5
4.0
4.5
4.5
1.5
1.5
2.5
3.0
3.0
3.0
3.0
2.0
1.5
1.5
400
400
800
800
800
10
10
16
18
18
40
40
75
75
75
084CR1
IRF 821
IRF 833
0840R1
IRF 831
221
221
227
225
225
450
450
450
500
500
7.0
8.0
8.0
2.0
2.5
4.0
5.0
5.0
1.0
1.5
1.1
0.85
0.85
4.0
3.0
1600
1600
1600
400
400
28
32
32
8
10
125
125
125
40
40
IRF 843
084ER1
IRF 841
IRF 822
084CR2
231
229
229
223
221
500
500
500
500
500
2.5
4.0
4.5
4.5
7.0
1.5
2.5
3.0
3.0
4.0
3.0
2.0
1.5
1.5
1.1
400
800
800
800
1600
10
16
18
18
28
40
75
75
75
125
IRF 820
IRF 832
0840R2
IRF 830
IRF 842
222
227
225
225
231
500
500
8.0
8.0
5.0
5.0
0.85
0.85
1600
1600
32
32
125
125
084ER2
IRF 840
229
229
Electrical characteristics @ 25°C unless otherwise specified.
7
CASE STYLE
TO-237
GE Power MOSFET Selector Guide (Cont.)
VOS
(Volts)
10 (Amps)
25°C
Ros (ON)
(Ohms)
CISS
(pF)
10M
(Amps)
Po
(Watts)
40
40
60
60
60
60
SO
SO
100
100
100
150
200
0.70
0.70
0.50
0.70
0.70
0.75
0.70
0.70
0.50
0.70
0.70
0.30
0.30
2.5
2.5
2.4
2.5
2.5
5.0
2.5
2.5
2.4
2.5
2.5
5.6
5.6
50
50
70
50
50
65
50
50
70
50
50
70
70
2.0
2.0
2.0
2.0
2.0
1.0
2.0
2.0
2.0
2.0
2.0
1.2
1.2
2.0
2.0
1.B
2.0
2.0
1.0
2.0
2.0
1.S
2.0
2.0
1.S
1.B
Electrical characteristics @ 25°C unless otherwise specified.
8
GEType
Number
Page
IVN5000AND
IVN5001AND
DBOAK2
IVN5OO0ANE
IVN5001ANE
VN10KMA
IVN5OO0ANF
IVN5OO1ANF
DSOAL2
IVN5000ANH
IVN5OO1ANH
DBOAM2
DBOAN2
321
321
317
321
321
325
321
321
317
321
321
319
319
CASE STYLE
TO-39
GE Power MOSFET Selector Guide (Cont.)
VOS
(Volts)
10 (Amps)
25°C
Ros (ON)
(Ohms)
CISS
(pF)
(Amps)
35
35
35
40
60
1.2
1.2
1.2
1.2
1.2
5.00
4.50
2.50
2.50
2.50
50
50
50
50
50
3
3
3
3
3
6.25
6.25
6.25
6.25
6.25
60
60
60
60
60
1.2
1.2
1.2
1.2
3.0
3.00
5.10
3.50
3.00
O.BO
50
50
50
50
200
3
3
3
3
12
60
60
60
60
60
3.5
5.0
6.0
7.0
8.0
0.60
0.40
0.30
0.25
0.18
200
400
400
BOO
800
BO
BO
90
90
90
1.2
1.2
1.2
1.2
1.2
2.50
5.10
6.00
4.00
4.00
90
100
100
100
100
1.2
1.2
3.0
3.5
5.0
100
100
100
150
150
10M
Po
(Watts)
GEType
Number
Page
VN30ABA
VN35ABA
VN35AK
IVN5OO0/1 TN 0
IVN5000/1TNE
327
327
329
323
323
6.25
6.25
6.25
6.25
15.00
VN66AK
VN67ABA
VN67AK
2N6660
IRFF 113
329
327
329
335
259
14
20
24
2B
32
15.00
20.00
20.00
25.00
25.00
IRFF 111
IRFF 123
IRFF 121
IRFF 133
IRFF 131
257
263
261
267
265
50
50
50
50
50
3
3
3
3
3
6.25
6.25
6.25
6.25
6.25
IVN5OO0/1 TN F
VN89ABA
VN90ABA
VN9BAK
2N6661
323
327
327
329
335
4.50
2.50
O.BO
0.60
0.40
50
50
200
200
400
3
3
12
14
20
6.25
6.25
15.00
15.00
20.00
VN99AK
IVN5000/1TNH
IRFF 112
IRFF 110
IRFF 122
329
323
259
257
263
6.0
7.0
B.O
1.B
2.2
0.30
0.25
0.18
2.40
1.50
400
BOO
BOO
200
200
24
2B
32
20.00
25.00
25.00
15.00
15.00
IRFF 120
IRFF 132
IRFF 130
IRFF 213
IRFF 211
261
267
265
271
269
150
150
150
150
200
3.0
3.5
4.5
5.5
1.B
1.20
0.80
0.60
0.40
2.40
400
400
800
BOO
200
-
20.00
20.00
25.00
25.00
15.00
IRFF 223
IRFF 221
IRFF233
IRFF 231
IRFF 212
275
273
279
277
271
200
200
2.2
3.0
1.50
1.20
200
400
15.00
20.00
IRFF 210
IRFF222
269
275
-
-
-
-
Electrical characteristics @ 25°C unless otherwise specified.
9
CASE STYLE
TO-39
GE Power MOSFET Selector Guide (Cont.)
VOS
(Volts)
10 (Amps)
25°C
Ros (ON)
(Ohms)
CISS
(pF)
200
200
200
350
350
3.50
4.50
5.50
1.15
1.35
0.8
0.6
0.4
5.0
3.6
400
800
800
200
200
350
350
350
350
400
2.00
2.50
3.00
3.50
1.15
2.5
1.8
1.5
1.0
5.0
400
400
400
400
400
400
400
1.35
2.00
2.50
3.00
3.50
3.6
2.5
1.8
1.5
1.0
450
450
450
450
500
1.40
1.60
2.25
2.75
1.40
4.0
3.0
2.0
1.5
4.0
400
400
800
800
400
500
500
500
1.60
3.0
2.25
2.75
2.0
400
800
800
1.5
YoM
Po
(Watts)
GEType
Number
Page
-
20
25
25
15
15
IRFF 220
IRFF 232
IRFF 230
IRFF 313
IRFF 311
273
279
277
283
281
20
20
25
25
15
IRFF .323
IRFF 321
IRFF 333
IRFF 331
IRFF 312
287
285
291
289
283
15
20
20
25
25
IRFF 310
IRFF 322
IRFF 320
IRFF 332
IRFF 330
281
287
285
291
289
20
20
25
25
20
IRFF 423
IRFF 421
IRFF 433
IRFF 431
IRFF 422
295
293
299
297
295
20
25
25
IRFF 420
IRFF 432
IRFF 430
293
299
297
(Amps)
-
800
800
200
200
400
-
400
-
800
800
-
-
Electrical characteristics @ 25°C unless otherwise specified.
10
CASE STYLE
4PIN DIP
GE Power MOSFET Selector Guide (Cont.)
'0 (Amps)
25°C
Ros(ON)
(Ohms)
CISS
(pF)
'OM
(Amps)
Po
(Watts)
GEType
Number
Page
60
60
60
60
60
0.40
0.50
0.50
0.80
1.00
3.20
2.40
2.40
0.80
0.60
70
70
70
200
200
1.5
2.0
2.0
3.0
4.0
1.0
1.0
1.0
1.0
1.0
IRFD1Z3
IRFD1Z1
D82AK2
IRFD113
D82BK2
243
241
241
235
233
60
60
60
60
100
1.00
1.10
1.30
1.30
0.40
0.60
0.40
0.30
0.30
3.20
200
400
400
400
70
4.0
4.4
5.2
5.2
1.5
1.0
1.0
1.0
1.0
1.0
IRFD111
IRFD123
D82CK2
IRFD121
IRFD1Z2
233
239
237
237
243
100
100
100
100
100
0.50
0.50
0.80
1.00
1.00
2.40
2.40
0.80
0.60
0.60
70
70
200
200
200
2.0
2.0
3.0
4.0
4.0
1.0
1.0
1.0
1.0
1.0
IRFD1Z0
D82AL2
IRFD112
D82BL2
IRFD110
241
241
235
233
233
100
100
100
150
150
1.10
1.30
1.30
0.60
0.45
0.40
0.30
0.30
1.50
2.40
400
400
400
200
200
4.4
5.2
5.2
2.5
1.8
1.0
1.0
1.0
1.0
1.0
IRFD122
D82CL2
IRFD120
IRFD211
IRFD213
239
237
237
245
247
150
150
150
150
150
0.30
0.30
0.60
0.80
0.80
5.60
5.60
1.50
0.80
0.80
70
70
200
400
400
1.2
1.2
2.5
3.2
3.2
1.0
1.0
1.0
1.0
1.0
D82AM2
IRFD2Z1
D82BM2
D82CM2
IRFD221
253
253
245
249
249
150
200
200
200
200
0.70
0.45
0.30
0.30
0.60
1.20
2.40
5.60
5.60
1.50
600
200
70
70
200
5.6
1.8
1.2
1.2
2.5
1.0
1.0
1.0
1.0
1.0
IRFD223
IRFD212
D82AN2
IRFD2Z0
D82BN2
251
247
253
253
245
200
200
200
200
350
0.60
0.70
0.80
0.80
0.40
1.50
1.2
0.80
0.80
2.50
200
600
400
400
400
2.5
5.6
3.2
3.2
1.6
1.0
1.0
1.0
1.0
1.0
IRFD210
IRFD222
D82CN2
IRFD220
IRFD323
245
251
249
249
2.0
2.0
1.6
2.0
2.0
1.0
1.0
1.0
1.0
1.0
IRFD321
D82C01
IRFD322
D82C02
IRFD320
255
255
Vos
(Volts)
350
350
400
400
400
0.50
0.50
0.40
0.50
0.50
1.80
1.80
2.50
1.80
1.80
400
400
400
400
400
Electrical characteristics @ 25° C unless otherwise specified.
11
-
255
255
CASE STYLE
TO-247
GE Power MOSFET Selector Guide (Cont.)
VOS
(Volts)
10 (Amps)
25°C
100°C
Ros (ON)
(Ohms)
CISS
(pF)
10M
(Amps)
Po
(Watts)
GEType
Number
Page
60
60
60
100
·100
33.0
40.0
40.0
33.0
40.0
20.0
25.0
25.0
20.0
25.0
0.08
0.055
0.055
0.08
0.055
3000
3000
3000
3000
3000
132
160
160
132
160
150
150
150
150
150
IRFP153
IRFP151
D88FK2
IRFP152
D88FL2
303
301
301
303
301
100
150
150
150
200
40.0
25.0
30.0
30.0
25.0
25.0
16.0
19.0
19.0
16.0
0.055
0.12
0.085
0.085
0.12
3000
3000
3000
3000
3000
160
100
120
120
100
150
150
150
150
150
IRFP150
IRF253
D88FM2
IRFP251
IRFP252
301
307
305
305
307
200
200
350
350
350
30.0
30.0
13.0
15.0
15.0 .
19.0
19.0
8.0
9.0
9.0
0.085
.0.085
0.4
0.3
0.3
3000
3000
3000
3000
3000
120
120
52
60
60
150
150
150
150
150
IRFP250
D88FN2
IRFP353
D88F01
IRFP351
305
305
311
309
309
400
400
400
450
450
13.0
15.0
15.0
12.0
13.0
8.0
9.0
9.0
7.0
8.0
0.4
0.3
0.3
0.5
0.4
3000
3000
3000
3000
3000
52
60
60
48
52
150
150
150
150
150
IRFP352
IRFP350
D88F02
IRFP453
IRFP451
311
309
309
315
313
450
500
500
500
13.0
12.0
13.0
13.0
8.0
7.0
8.0
8.0
0.4
0.5
0.4
0.4
3000
3000
3000
3000
52
48
52
52
150
150
150
150
D88FR1
IRFP452
D88FR2
IRFP450
313
315
313
313
Electrical characteristics @ 25°C unless otherwise specified.
CASE STYLE
TO-202
VOS
(Volts)
40
40
60
60
80
80
10 (Amps)
25°C
100°C
1.2
1.2
1.2
1.2
1.2
1.2
6.5
3.0
3.0
5.5
4.0
6.4
Ros(ON)
(Ohms)
5.0
3.0
3.0
3.5
4.0
4.5
CISS
(pF)
50
50
50
50
50
50
Electrical characteristics @ 25° C unless otherwise specified.
12
10M
(Amps)
3
3
3
3
3
3
Po
(Watts)
12
12
12
12
12
12
GEType
Number
Page
VN40AFA
VN46AFA
VN66AFA
VN67AFA
VN88AFA
V",89AFA
331
333
333
331
333
331
GENERAL ELECTRIC
INSULATED GATE TRANSISTORS
Ie (Amps)
VCES
Volts
100°C
VSAT
Volts
toll
25°C
400
400
500
500
18
18
18
18
10
10
10
10
2.5
2.5
2.5
2.5
4.5
0.8
4.5
0.8
J-LS
CASE STYLE
TO-220
Po
Watts
75
75
75
75
Type
IGT4D10
IGT4D11
IGT4E10
IGT4E11
Page
337
341
337
341
CASE STYLE
TO-247
Ie (Amps)
VCES
Volts
90°C
VSAT
Volts
toll
25°C
J-LS
Po
Watts
Type
400
400
500
500
32
32
32
32
22
20
22
20
2.2
2.5
2.2
2.5
4.5
0.8
4.5
0.8
125
125
125
125
IGT8D20
IGT8D21
IGT8E20
IGT8E21
Page
361
365
361
365
CASE STYLE
TO,..204
Ie (Amps)
VCES
Volts
100°C
VSAT
Volts
toll
25°C
J-Ls
Po
Watts
Type
Page
400
400
400
400
500
500
500
500
18
18
32
32
18
18
32
32
10
10
22
20
10
10
22
20
2.5
2.5
2.2
2.5
2.5
2.5
2.2
2.5
4.5
0.8
4.5
0.8
4.5
0.8
4.5
0.8
75
75
125
125
75
75
125
125
IGT6D10
IGT6D11
IGT6D20
IGT6D21
IGT6E10
IGT6E11
IGT6E20
IGT6E21
345
349
353
357
345
349
353
357
13
POWER MOSFET
CROSS REFERENCE
CASE STYLE
TO-204
GENERAL JEDEC TYPES
10
Competitive
Part Number
Vos
(Volts)
2N6755
2N6756
2N6757
2N6758
2N6759
2N6760
2N6761
2N6762
2N6763
2N6764
2N6765
2N6766
2N6767
2N6768
2N6769
2N6770
(Amps)
10
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
GE Direct
Replacement
Vos
(Volts)
@2SoC
ROS(ON)
(Ohms)
Case
Style
60
100
150
200
350
400
450
500
60
100
12.0
14.0
8.0
9.0
4.5
5.5
4.0
4.5
31.0
38.0
0.25
0.18
0.60
0.40
1.5
1.0
2.0
1.5
0.080
0.055
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-'204AA
TO-204AA
TO-204AE
TO-204AE
2N6755
2N6756
2N6757
2N6758
2N6759
2N6760
2N6761
2N6762
2N6763
2N6764
60
100
150
200
350
400
450
500
60
100
12.0
14.0
8.0
9.0
4.5
5.5
4.0
4.5
31.0
38.0
0.25
0.18
0.60
0.40
1.5
1.0
2.0
1.5
0.080
0.055
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AE
TO-204AE
150
200
350
400
450
500
25.0
30.0
12.0
14.0
11.0
12.0
0.12
0.085
0.40
0.30
0.50
0.40
TO-204AE
TO-204AE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
2N6765
2N6766
2N6767
2N6768
2N6769
2N6770
150
200
350
400
450
500
25.0
30.0
12.0
14.0
11.0
12.0
0.12
0.085
0.40
0.30
0.50
0.40
TO-204AE
TO-204AE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
Vos
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
INTERNATIONAL RECTIFIER
10
10
Competitive
Part Number
Vos
(Volts)
IRF130
IRF131
IRF132
IRF133
IRF140
IRF141
(Amps)
GE Direct
Replacement
@2SoC
Ros (ON)
(Ohms)
Case
Style
100
60
100
60
100
60
14.0
14.0
12.0
12.0
27.0
27.0
0.18
0.18
0.25
0.25
0.085
0.085
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AE
TO-204AE
IRF130
IRF131
IRF132
IRF133
IRF140
IRF141
100
60
100
60
100
60
14.0
14.0
12.0
12.0
27.0
27.0
0.18
0.18
0.25
0.25
0.085
0.085
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AE
TO-204AE
IRF142
IRF143
IRF150
IRF151
iRF152
IRF153
100
60
100
60
100
60
24.0
24.0
40.0
40.0
33.0
33.0
0.11
0.11
0.055
0.055
0.080
0.080
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
IRF142
IRF143
IRF150
IRF151
IRF152
IRF153
100
60
100
60
100
60
24.0
24.0
40.0
40.0
33.0
33.0
0.11
0.11
0.055
0.055
0.080
0.080
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
IRF230
IRF231
IRF232
IRF233
IRF240
IRF241
lRF242
IRF243
IRF250
IRF251
200
150
200
150
200
150
200
150
200
150
9.0
9.0
8.0
8.0
18.0
18.0
16.0
16.0
30.0
30.0
0.40
0.40
0.60
0.60
0.18
0.18
0.22
0.22
0.085
0.085
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
IRF230
IRF231
IRF232
IRF233
IRF240
IRF241
IRF242
IRF243
IRF250
IRF251
200
150
200
150
200
150
200
150
200
150
9.0
9.0
8.0
8.0
18.0
18.0
16.0
16.0
30.0
30.0
0.40
0.40
0.60
0.60
0.18
0.18
0.22
0.22
0.085
0.085
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
IRF252
IRF253
200
150
25.0
25.0
0.12
0.12
TO-204AE
TO-204AE
IRF252
IRF253
200
150
25.0
25.0
0.12
0.12
TO-204AE
TO-204AE
IRF330
IRF331
IRF332
IRF333
400
350
400
350
5.5
5.5
4.5
4.5
1.0
1.0
1.5
1.5
TO-204AA
TO-204AA
TO-204AA
TO-204AA
IRF330
IRF331
IRF332
IRF333
400
350
400
350
5.5
5.5
4.5
4.5
1.0
1.0
1.5
1.5
TO-204AA
TO-204AA
TO-204AA
TO-204AA
14
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
TO-204
International Rectifier (Cont.)
CASE STYLE
TO-220
10
10
Competitive
Part Number
Vos
(Volts)
(Amps)
@2SoC
Ros (ON)
(Ohms)
Case
Style
GE Direct
Replacement
Vos
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
IRF340
IRF341
IRF342
IRF343
IRF350
IRF351
IRF352
IRF353
400
350
400
350
400
350
400
350
10.0
10.0
8.0
8.0
15.0
15.0
13.0
13.0
0.55
0.55
0.80
0.80
0.30
0.30
0.40
0.40
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
IRF340
IRF341
IRF342
IRF343
IRF350
IRF351
IRF352
IRF353
400
350
400
350
400
350
400
350
10.0
10.0
8.0
8.0
15.0
15.0
13.0
13.0
0.55
0.55
0.80
0.80
0.30
0.30
0.40
0.40
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
IRF430
IRF431
IRF432
IRF433
IRF440
IRF441
IRF442
IRF443
500
450
500
450
500
450
500
450
4.5
4.5
4.0
4.0
8.0
8.0
7.0
7.0
1.5
1.5
2.0
2.0
0.85
0.85
1.1
1.1
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
IRF430
IRF431
IRF432
IRF433
IRF440
IRF441
IRF442
IRF443
500
450
500
450
500
450
500
450
4.5
4.5
4.0
4.0
8.0
8.0
7.0
7.0
1.5
1.5
2.0
2.0
0.85
0.85
1.1
1.1
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
IRF450
IRF451
IRF452
IRF453
IRF510
IRF511
IRF512
IRF513
IRF520
IRF521
500
450
500
450
100
60
100
60
100
60
13.0
.13.0
12.0
12.0
4.0
4.0
3.5
3.5
8.0
8.0
0.40
0.40
0.50
0.50
0.60
0.60
0.80
0.80
0.30
0.30
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF450
IRF451
IRF452
IRF453
IRF510
IRF511
IRF512
IRF513
IRF520
IRF521
500
450
500
450
100
60
100
60
100
60
13.0
13.0
12.0
12.0
4.0
4.0
3.5
3.5
8.0
8.0
0.40
0.40
0.50
0.50
0.60
0.60
0.80
0.80
0.30
0.30
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF522
IRF523
IRF530
IRF531
IRF532
IRF533
IRF540
IRF541
IRF542
IRF543
100
60
100
60
100
60
100
60
100
60
7.0
7.0
14.0
14.0
12.0
12.0
27.0
27.0
24.0
24.0
0.40
0.40
0.18
0.18
0.25
0.25
0.085
0.085
0.11
0.11
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF522
IRF523
IRF530
IRF531
IRF532
IRF533
IRF540
IRF541
IRF542
IRF543
100
60
100
60
100
60
100
60
100
60
7.0
7.0
14.0
14.0
12.0
12.0
27.0
27.0
24.0
24.0
0.40
0.40
0.18
0.18
0.25
0.25
0.085
0.085
0.11
0.11
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF610
IRF611
IRF612
IRF613
IRF620
IRF621
IRF622
IRF623
IRF630
IRF631
200
150
200
150
200
150
200
150
200
150
2.5
2.5
2.0
2.0
5.0 '
.5.0
4.0
4.0
9.0
9.0
1.5
1.5
2.4
2.4
0.80
0.80
1.2
1.2
0.40
0.40
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF610
IRF611
IRF612
IRF613
IRF620
IRF621
IRF622
IRF623
IRF630
IRF631
200
150
200
150
200
150
200
150
200
150
2.5
2.5
2.0
2.0
5.0
5.0
4.0
4.0
9.0
9.0
1.5
1.5
2.4
2.4
0.80
0.80
1.2
1.2
0.40
0.40
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF632
IRF633
IRF640
IRF641
IRF642
IRF643
200
150
200
150
200
150
8.0
8.0
18.0
18.0
16.0
16.0
0.60
0.60
0.18
0.18
0.22
0.22
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF632
IRF633
IRF640
IRF641
IRF642
IRF643
200
150
200
150
200
150
8.0
8.0
18.0
18.0
16.0
16.0
0.60
0.60
0.18
0.18
0.22
0.22
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
15
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
TO:'39
International Rectifier (Cont.)
Competitive
Part Number
Io
(Amps)
@25°C
Vos
(Volts)
Ros (ON)
(Ohms)
Case
Style
GE Direct
Replacement
CASE STyLE
4 PIN DIP
Vos
(Volts)
Io
(Amps)
@25°C
CASE STYLE
TO-220
Case
Style
ROS(ON)
(Ohms)
1.5
1.5
1.3
1.3
3.6
3.6
5.0
5.0
TO-220AB
TO"220AB
TO-220AB
TO-220AB
IRF710
IRF711
IRF712
IRF713
40P
350
400
350
1.5
1.5
1.3
1.3
3.6
3.6
5.0
5.0
TO-220AB
TO-220AB
TO-220AB
TO-220AB
3.0
3.0
2.5
2.5
5.5
5.5
4.5
4.5
10.0
10.0
1.8
1.8
2.5
2.5
1.0
1.0
1.5
1.5
0.55
0.55
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF720
IRF721
IRF722
IRF723
IRF730
IRF731
IRF732
IRF733
IRF740
IRF741~··'
400
350
400
350
400
350
400
350
400
350
3.0
3.0
2.5
2.5
5.5
5.5
4.5
4.5
10.0
10.0
1.8
1.8
2.5
2.5
1.0
1.0
1.5
1.5
0.55
0.55
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
400
350
500
450
500
4S0
500
4S0
500
4S0
8.0
8.0
2.5
2.S
2.0
2.0
4.5
4.5
4.0
4.0
0.80
0.80
3.0
3.0
4.0
4.0
1.S
1.5
2.0
2.0
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF742
IRF743
IRF820 ..
IRF821
IRF822
IRF823
IRF830
IRF831 .
IRF832
IRF833
400
350
500
450
SOO
450
SOO
450
SOO
4S0
8.0
8.0
2.5
2.S
2.0
2.0
4.5
4.5
4.0
4.0
0.80
0.80
3.0
3.0
4.0
4.0
1.S
1.5
2.0
2.0
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
IRF840
IRF841
IRF842
IRF843
IRFD1Z0
IRFD1Z1
IRFD1Z2
lRFD1Z3
500
450
SOO
4S0
100
60
100
60
8.0
8.0
7.0
7.0
0.50
O.SO
0.40
0.40
0.85
0.8S
1.1
1.1
2.4
2.4
3.2
3.2
TO-220AB
TO-220AB
TO-220AB
TO-220AB
4PIN DIP
4 PIN DIP
4PIN DIP
4PIN DIP
IRF840
IRF841
IRF842
IRF843
IRFDIZO
IRFDIZ1
IRFDIZ2
IRFDIZ3
500
4S0
SOO
4S0
100
60
100
60
' 8.0
8.0
7.0
7.0
0.50
O.SO
0.40
0.40
0.85
0.85
1.1
1.1
2.4
2.4
3.2
3.2
TO-220AB
TO-220AB
TO-220AB
TO-220AB
4PIN DIP
4PIN DIP
4 PIN DIP
4 PIN DIP
IRFD110
IRFD111
IRFD112
IRFD113
100
60
100
60
1.0
1.0
0.80
0.80
0.60
0.60
0.80
0.80
4PIN
4PIN
4PIN
4 PIN
DIP
DIP
DIP
DIP
IRFD110
IRFD111
IRFD112
IRFD113
100
60
100
60
1.0
1.0
0.80
0.80
0.60
0.60
0.80
0.80
4
4
4
4
IRFD120
IRFD123
100
60
1.3
1.1
0.30
0.40
4 PIN DIP
4PIN DIP
IRFD120
IRFD123
100
60
1.3
1.1
0.30
0.40
4 PIN DIP
4 PIN DIP
IRFD210
IRFD213
200
1S0
0.60
O.4S
1.S
2.5
4 PIN DIP
4PIN DIP
IRFD210
IRFD213
200
150
0.60
0.45
1.S
2.S
4PIN DIP
4PIN DIP
IRFF110
IRFF111
IRFF112
IRFF113
100
60
100
60
3.S
3.S
3.0
3.0
0.60
0.60
0.80
0.80
TO-39
TO-39
TO-39
TO-39
IRFF110
IRFF111
IRFF111
IRFF113
100
60
60
60
3.S
3.S
3.S
3.0
0.60
0.60
0.80
0.80
TO-39
TO-39
TO-39
TO-39
IRF710
IRF711
IRF712
IRF713
400
.3S0
400
350
IRF720
IRF721
IRF722
IRF723
IRF730
IRF731
IRF732
IRF733
IRF740
IRF741
400
350
400
350
400 .
350
400
350
400
350
IRF742
IRF743
IRF820
IRF821
IRF822
IRF823
IRF830
IRF831
IRF832
IRF833
.. ,
16
PIN
PIN
PIN
PIN
DIP
DIP
DIP
DIP
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
International Rectifier (Cont.)
Competitive
Part Number
VDS
(Volts)
IRFF120
IRFF121
IRFF122
IRFF123
ID
(Amps)
TO-39
Yo
(Amps)
@25°C
RDS(ON)
(Ohms)
Case
Style
GE Direct
Replacement
Vos
(Volts)
@25°C
RDS (ON)
(Ohms)
Case
Style
100
60
100
60
6.0
6.0
5.0
5.0
0.30
0.30
0.40
0.40
TO-39
TO-39
TO-39
TO-39
IRFF120
IRFF121
IRFF122
IRFF120
100
60
100
60
6.0
6.0
5.0
5.0
0.30
0.30
0.40
0.40
TO-39
TO-39
TO-39
TO-39
IRFF130
IRFF131
IRFF132
IRFF133
100
60
100
60
8.0
8.0
7.0
7.0
0.18
0.18
0.25
0.25
TO-39
TO-39
TO-39
TO-39
IRFF130
IRFF131
IRFF132
IRFF133
100
100
60
8.0
8.0
7.0
7.0
0.18
0.18
0.25
0.25
TO-39
TO-39
TO-39
TO-S9
IRFF210
IRFF211
IRFF212
IRFF213
IRFF220
IRFF221
IRFF222
IRFF223
200
150
200
150
200
150
200
150
2.2
2.2
1.8
1.8
3.5
3.5
3.0
3.0
1.5
1.5
2.4
2.4
0.80
0.80
1.2
1.2
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
IRFF210
IRFF211
IRFF212
IRFF213
IRFF220
IRFF221
IRFF222
IRFF223
200
150
200
150
200
150
200
150
2.2
2.2
1.8
1.8
3.5
3.5
3.0
3.0
1.5
1.5
2.4
2.4
0.80
0.80
1.2
1.2
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
IRFF230
IRFF231
IRFF232
IRFF233
200
150
200
150
5.5
5.5
4.5
4.5
0.40
0.40
0.60
0.60
TO-39
TO-39
TO-39
TO-39
IRFF230
IRFF231
IRFF232
IRFF233
200
150
200
150
5.5
5.5
4.5
4.5
0.40
0.40
0.60
0.60
TO-39
TO-39
TO-39
TO-39
IRFF310
IRFF311
IRFF312
IRFF313
200
150
200
150
1.35
1.35
1.15
1.15
3.6
3.6
5.0
5.0
TO-39
TO-39
TO-39
TO-39
IRFF310
IRFF311
IRFF312
IRFF313
200
150
200
150
1.35
1.35
1.15
1.15
3.6
3.6
5.0
5.0
TO-39
TO-39
TO-39
TO-39
IRFF320
IRFF321
IRFF322
IRFF323
400
350
400
350
2.5
2.5
2.0
2.0
1.8
1.8
2.5
2.5
TO-39
TO-39
TO-39
TO-39
IRFF320
IRFF321
IRFF322
IRFF323
400
350
400
350
2.5
2.5
2.0
2.0
1.8
1.8
2.5
2.5
TO-39
TO-39
TO-39
TO-39
IRFF330
IRFF331
IRFF332
IRFF333
400
350
400
350
3.5
3.5
3.0
3.0
1.0
1.0
1.5
1.5
TO-39
TO-39
TO-39
TO-39
IRFF330
IRFF331
IRFF332
IRFF333
400
350
400
350
3.5
3.5
3.0
3.0
1.0
1.0
1.5
1.5
TO-39
TO-39
TO-39
TO-39
IRFF420
IRFF421
IRFF422
IRFF423
500
450
500
450
1.6
1.6
1.4
1.4
3.0
3.0
4.0
4.0
TO-39
TO-39
TO-39
TO-39
IRFF420
IRFF421
IRFF422
IAFF423
500
450
500
450
1.6
1.6
1.4
1.4
3.0
3.0
4.0
4.0
TO-39
TO-39
TO-39
TO-39
IRFF430
IRFF431
IRFF432
IRFF433
500
450
500
450
2.75
2.75
2.25
2.25
1.5
1.5
2.0
2.0
TO-39
TO-39
TO-39
TO-39
IRFF430
IRFF431
IAFF432
IRFF433
500
450
500
450
2.75
2.75
2.25
2.25
1.5
1.5
2.0
2.0
TO-39
TO-39
TO-39
TO-39
17
60
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
TO-220
MOTOROLA
10
Competitive
Part Number
Vos
(Volts)
MTP2N50
MTP2N45
MTP2N40
MTP2N35
MTP2N20
MTP2N18
500
450
400
350
200
180
MTP3N40
MTP3N35
MTP3N15
MTP3N12
MTP4N50
MTP4N45
MTP5N40
MTP5N35
(Amps)
Nearest GE
Equivalent
Part Number
to
Case
Style
2.0
2.0
2.5
2.5
2.0
2.0
4.0
4.0
2.5
2.5
2.4
2.4
TO-220AB
TO-220AB
TO-220AB
TO-22DAB
TO-220AB
TO-220AB
400
350
150
150
500
450
400
350
2.5
2.5
2.5
2.5
4.0
4.0
4.5
4.5
2.5
2.5
1.5
1.5
2.0
2.0
1.5
1.5
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
D84CN2
D84CN2
D84BK2
D84BK2
IRF632
IRF632
IRF633
IRF633
IRF632
IRF632
200
200
60
60
200
200
150
150
200
200
5.0
5.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
0.80
0.80
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
IRF633
IRF633
D84CL2
D84CL2
D84DM2
D84DM2
D84CL2
D84CL2
D84CK2
D84CK2
150
150
100
100
150
150
100
100
60
60
8.0
8.0
8.0
8.0
9.0
9.0
8.0
8.0
8.0
8.0
0.60
0.60
0.30
0.30
0.40
0.40
0.30
0.30
0.30
0.30
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
IRF532
IRF532
IRF533
IRF533
D84DK2
D84DK2
100
100
60
60
60
60
12.0
12.0
12.0
12.0
14.0
14.0
0.25
0.25
0.25
0.25
0.18
0.18
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
Case
Style
2.0
2.0
2.0
2.0
2.0
2.0
4.0
4.0
3.3
3.3
2.2
2.2
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
IRF822
IRF823
IRF722
IRF723
IRF612
IRF612
500
450
400
350
200
200
400
350
150
120
500
450
400
350
3.0
3.0
3.0
3.0
4.0
4.0
5.0
5.0
3.3
3.3
1.5
1.5
2.0
2.0
1.5
1.5
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
IRF722
IRF723
D84BM2
D84BM2
IRF832
IRF833
IRF732
IRF733
MTP5N20
MTP5N18
MTP5N06
MTP5N05
MTP7N20
MTP7N18
MTP7N15
MTP7N12
MTP8N20
MTP8N18
200
180
60
50
200
180
150
120
200
180
5.0
5.0
5.0
5.0
7.0
7.0
7.0
7.0
8.0
8.0
1.0
1.0
0.60
0.60
0.65
0.65
0.70
0.70
0.50
0.50
TO-220
TO-220.
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
MTP8N15
MTP8M12
MTP8N10
MTP8N08
MTP10N15
MTP10N12
MTP10N10
MTP10N08
MTP10N06
MTP10N05
150
120
100
80
150
120
100
80
60
50
8.0
8.0
8.0
8.0
10.0
10.0
10.0
10.0
10.0
10.0
0.40
0.40
0.40
0.50
0.30
0.30
0.33
0.33
0.28
0.28
MTP12N10
MTP12N08
MTP12N06
MTP12N05
MTP15N06
MTP15N05
100
80
60
50
60
50
12.0
12.0
12.0
12.0
15.0
15.0
0.18
0.18
0.20
0.20
0.16
0.16
@25°C
(Amps)
. Ros (ON)
(Ohms)
ROS(ON)
(Ohms)
18
Vos
(Volts)
@25°C
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
TO-204
Motorola (Cont.)
10
Competitive
Part Number
Vos
(Valls)
MTM2N50
MTM2N45
500
450
MTM3N40
MTM3N35
MTM4N50
MTM4N45
MTM5N40
MTM5N35
MTM5N20
MTM5N18
(Amps)
@2SoC
Nearest GE
Equivalent
Part Number
CASE STYLE
TO-220
10
ROS(ON)
(Ohms)
Case
Style
2.0
2.0
4.0
4.0
TO-204
TO-204
IRF822
IRF823
500
450
400
350
500
450
400
350
200
180
3.0
3.0
4.0
4.0
5.0
5.0
5.0
5.0
3.3
3.3
2.0
2.0
1.5
1.5
1.0
1.0
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
IRF722
IRF723
IRF432
IRF433
IRF332
IRF333
D84CN2
D84CN2
MTM7N50
MTM7N45
MTM7N20
MTM7N18
MTM7N15
MTM7N12
500
450
200
180
150
120
7.0
7.0
7.0
7.0
7.0
7.0
1.2
1.2
0.65
0.65
0.70
0.70
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
MTM8N40
MTM8N35
MTM8N20
MTM8N18
MTMBN15
MTMBN12
MTMBN10
MTM8N08
MTM10N15
MTM10M12
400
350
200
1BO
150
120
100
80
150
120
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
10.0
10.0
0.80
0.80
0.40
0.40
0.50
0.50
0.50
0.50
0.30
0.30
MTM10N10
MTM10NOB
MTM10NOB
MTM10N05
MTM12N20
MTM12N18
MTM12N15
MTM12N12
MTM12N10
MTM12NOB
MTM12N06
MTM12N05
100
80
BO
50
200
180
150
120
100
80
60
50
10.0
10.0
10.0
10.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
0.33
0.33
0.28
0.28
0.35
0.35
0.26
0.26
0.18
0.18
0.20
0.20
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
2.0
2.0
4.0
4.0
TO-220AB
TO-220AB
400
350
500
450
400
350
200
200
2.5
2.5
4.0
4.0
4.5
4.5
5.0
5.0
2.5
2.5
2.0
2.0
1.5
1.5
0.80
0.80
TO-220AB
TO-220AB
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-220AB
TO-220AB
IRF442
IRF443
IRF232
IRF232
IRF233
IRF233
500
450
200
200
150
150
7.0
7.0
B.O
B.O
B.O
B.O
1.1
1.1
0.60
0.60
0.60
O.BO
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
IRF342
IRF343
IRF232
IRF232
IRF233
IRF233
IRF132
IRF132
D8BDM2
D8BDM2
400
350
200
200
150
150
100
100
100
100
8.0
B.O
B.O
8.0
B.O
B.O
12.0
12.0
9.0
9.0
O.BO
O.BO
O.BO
O.BO
O.BO
O.BO
0.25
0.25
0.40
0.40
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
IRF132
IRF132
IRF133
IRF133
DB6DN2
D86DN2
D86DM2
DBBDM2
IRF132
IRF132
IRF133
IRF133
100
100
BO
60
200
200
150
150
100
100
60
BO
12.0
12.0
12.0
12.0
9.0
9.0
9.0
9.0
12.0
12.0
12.0
12.0
0.25
0.25
0.25
0.25
0.40
0.40
0.40
0.40
0.25
0.25
0.25
0.25
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
19
VOS
(Volts)
Power MOSFET
Cross-Reference (Cont.)
Motorola (Cont.)
CASE STYLE
CASE STYLE
CASE STYLE
CASE STYLE
TO-39
TO-204
TO-220
TO-247
Competitive
Part Number
VOS
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
Nearest GE
Equivalent
Part Number
VOS
(Volts)
(Amps)
@25°C
RDS(ON)
(Ohms)
Case
Style
MTM15N50
MTM15N45
500
450
15.0
15.0
0.50
0.50
TO-204
TO-204
D86FR2
D86FR1
500
450
13.0
13.0
0.40
0.40
TO-204AA
TO-204AA
MTM15N40
MTM15N35
MTM15N20
MTM15N18
MTM15N15
MTM15N12
MTM15N06
MTM15N05
400
350
200
180
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
0.40
0.40
0.16
0.16
D86FQ2
D86FQ1
IRF242
IRF242
IRF243
IRF243
D86DK2
D86DK2
400
350
200
200
15.0
15.0
16.0
0.30
0.30
0.22
16.0
0.22
0.22
0.16
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
MTM20N14
MTM20N12
MTM20N10
MTM20N08
MTM25N10
MTM25N08
MTM25N06
MTM25N05
MTM35N06
MTM35N05
150
120
100
80
100
80
60
50
60
50
20.0
20.0
25.0
25.0
25.0
25.0
35.0
35.0
0.12
0.12
0.15
0.15
0.070
0.070
0.080
0.080
0.055
0.055
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
D86EM2
D86EM2
IRF142
IRF142
IRF142
IRF142
IRF143
IRF143
IRF153
IRF153
150
150
100
100
100
100
60
60
60
60
MTH7N50
MTH7N45
MTH8N40
MTH8N35
MTH15N20
MTH15M18
MTH15N15
MTH15N12
500
450
400
350
200
180
150
120
7.0
7.0
8.0
8.0
15.0
15.0
15.0
15.0
0.80
0.80
0.55
0.55
0.16
0.16
0.25
0.25
TO-218
TO-218
TO-218
TO-218
TO-218
TO-218
TO-218
TO-218
D88FR2
D88FR2
D88FQ2
D88FQ2
D88FN2
D88FN2
D88FM2
D88FM2
MTH20N15
MTH20N12
MTH25N10
MTH25N08
MTH35N06
MTH35N05
150
120
100
80
60
50
20.0
20.0
25.0
25.0
35.0
35.0
0.12
0.12
0.070
0.070
0.055
0.055
TO-218
TO-218
TO-218
TO-218
TO-218
TO-218
90
60
35
60
2.0
2.0
0.5
2.0
1.7
1.4
5.0
TO-39
TO-39
TO-39
TO-39
10
MFE990
MFE960
MFE930
MFE910
150
120
60
50
20.0
20.0
2.0
0.22
0.22
0.16
20
10
14.0
0.18
TO-204AA
TO-204AA
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-220AA
TO-220AA
18.0
24.0
24.0
24.0
24.0
24.0
24.0
33.0
33.0
0.18
0.18
0.11
0.11
0.11
0.11
0.11
0.11
0.080
0.080
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
500
500
400
400
200
200
150
150
13.0
13.0
15.0
15.0
30.0
30.0
30.0
30.0
0.40
0.50
0.40
0.40
0.085
0.085
0.085
0.085
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
D88FM2
D88FM2
D88FL2
D88FL2
D88FK2
D88FK2
150
150
100
100
60
50
30.0
30.0
40.0
40.0
40.0
40.0
0.085
0.085
0.055
0.055
0.055
0.055
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
IRF112
IRF113
IRF113
IRF113
100
60
60
60
3.0
3.0
3.0
3.0
0.80
0.80
0.80
0.80
TO-39
TO-39
TO-39
TO-39
150
150
60
60
16.0
16.0
14.0
18.0
0.22
0.18
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
TO-39
R.C.A.
CASE STYLE
TO-204
CASE STYLE
TO-220
10
Nearest GE
Equivalent
Part Number
VOS
(Volts)
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
IRFF212
IRFF212
IRFF211
IRFF213
IRFF112
IRFF112
IRFF113
IRFF113
IRFF233
IRFF233
200
200
150
150
100
100
60
60
150
150
1.8
1.8
2.2
1.8
3.0
3.0
3.0
3.0
4.5
4.5
2.4
2.4
1.5
2.4
0.80
0.80
0.80
0.80
O.SO
O.SO
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
TO-39
0.B5
0.85
TO-204
TO-204
D8SER2
D8SER1
500
450
8.0
8.0
0.85
0.85
TO-204AA
TO-204AA
25.0
25.0
30.0
30.0
35.0
35.0
45.0
45.0
0.15
0.15
0.085
0.085
O.OSO
O.OSO
0.040
0.040
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
IRF252
IRF252
D8SFM2
D8SFM2
IRF152
IRF152
DB6FK2
DBSFK2
200
200
150
150
100
100
SO
SO
25.0
25.0
30.0
30.0
33.0
33.0
40.0
40.0
0.12
0.12
0.085
0.085
0.080
0.080
0.055
0.055
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
TO-204AE
500
450
200
1BO
500
450
150
120
3.0
3.0
8.0
8.0
10.0
10.0
10.0
10.0
3.0
3.0
0.50
0.50
0.85
0.85
0.30
0.30
TO-2D4
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
.D84CR2
DB4CR1
IRF232
IRF232
DBSER2
D8SER1
D8SDM2
DBSDM2
500
450
200
200
500
450
150
150
2.5
2.5
8.0
8.0
8.0
8.0
9.0
9.0
3.0
3.0
O.SO
O.SO
0.85
0.85
0.40
0.40
TO-220AB
TO-220AB
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
RFM12N40
RFM12N35
RFM12N20
RFM12N18
RFM12N10
RFM12N08
400
350
200
1BO
100
BO
12.0
12.0
12.0
12.0
12.0
12.0
0.50
0.50
0.25
0.25
0.20 '
0.20
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
IRF352
IRF353
D8SDN2
D8SDN2
D8SDL2
D8SDL2
400
350
200
200
100
100
13.0
13.0
9.0
9.0
14.0
14.0
0.40
0.40
0.40
0.40
0.18
0.1B
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
RFM15N15
RFM15N12
RFM15N06
RFM15N05
RFM18N10
RFM18N08
150
120
SO
50
100
BO
15.0
15.0
15.0
15.0
1B.0
0.15
0.15
0.15
0.15
0.12
0.12
TO-204
TO-204
TO-204
TO-204
TO-2D4
TO-204
IRF243
IRF243
DBSDK2
D8SDK2
D8SDL2
DBSDL2
150
150
SO
SO
100
100
1S.0
1S.0
14.0
14.0
14.0
14.0
0.22
0.22
0.18
0.18
0.18
0.18
TO-204AE
TO-204AE
To
(Amps)
@2SoC
Competitive
Part Number
Vos
(Volts)
RFL1N20
RFL1N18
RFL1N15
RFL1N12
RFL1N10
RFL1N08
RFL2N06
RFL2N05
RFL4N15
RFL4N12
200
180
150
120
100
80
60
50
150
120
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
4.0
4.0
3.0
3.0
2.0
2.0
1.25
1.25
O.BO
0.80
0.30
0.30
RFK10N50
RFK10N45
500
450
10.0
10.0
RFK25N20
RFK25N18
RFK30N15
RFK30N12
RFK35N10
RFK35NOB
RFK45NOS
RFK45N05
200
180
150
120
100
80
SO
50
RFM3N50
RFM3N45
RFM8N20
RFM8N18
RFM10N50
RFM10N45
RFM10N15
RFM10N12
1B.0
ROS(ON)
(Ohms)
Case
Style
21
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
TO-2q4AA
TO-204AA
TO-204AA
TO-204AA
Power MOSFET
Cross Reference (Cont.)
CASE STYLE
TO-220
R.C.A. (Cont.)
10
Competitive
Part Number
Vos
(Volts)
RFP2N20
RFP2N18
RFP2N15
RFP2N12
RFP2N10
RFP2N08
200
180
150
120
100
80
RFP3N50
RFP3N45
RFP4N06
RFP4N05
(Amps)
@25°C
Nearest GE
Equivalent
Part Number
Vos
(Volts)
Io
(Amps)
@25°C
Ros (ON)
(Ohms)
Case
Style
IRF612
IRF612
IRF613
IRF613
IRF512
IRF512
200
200
150
150
100
100
2.0
2.0
2.0
2.0
3.5
3.5
2.4
2.4
2.4
2.4
0.80
0.80
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220
TO-220
TO-220
TO-220
D85CR2
D84CR1
D84BK2
D84BK2
500
450
60
60
2.5
2.5
4.0
4.0
3.0
3.0
0.60
0.60
TO-220AB
TO-220AB
TO-220AB
TO-220AB
0.50
0.50
0.30
0.30
0.25
0.25
0.20
0.20
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
IRF632
IRF632
D84DM2
D84DM2
D84DN2
D84DN2
IRF532
IRF532
200
200
150
150
200
200
100
100
8.0
8.0
9.0
9.0
9.0
9.0
12.0
12.0
0.60
0.60
0.40
0.40
0.40
0.40
0.25
0.25
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
0.15
0.15
0.15
0.15
0.15
0.12
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
IRF643
IRF643
D84DK2
D84DK2
D84DL2
D84DL2
150
150
60
60
100
100
16.0
16.0
14.0
14.0
14.0
14.0
0.22
0.22
0.18
0.18
0.18
0.18
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
ROS(ON)
(Ohms)
Case
Style
2.0
2.0
2.0
2.0
2.0
2.0
3.0
3.0
2.0
2.0
1.25
1.25
TO-220
TO-220
TO-220
TO-220
TO-220
TO-220
500
450
60
50
3.0
3.0
4.0
4.0
3.0
3.0
0.80
0.80
RFP8N20
RFP8N18
RFP10N15
RFP10N12
RFP12N20
RFP12N18
RFP12N10
RFP12N08
200
180
150
120
200
180
100
80
8.0
8.0
10.0
10.0
12.0
12.0
12.0
12.0
RFP15N15
RFP15N12
RFP15N06
RFP15N05
RFP18N10
RFP18N08
150
120
60
50
100
80
15.0
15.0
15.0
15.0
18.0
18.0
22
Power MOSFET
Cross-Reference (Cant.)
CASE STYLE
TO-39
SIEMENS
10
(Amps)
@2SoC
Competitive
Part Number
VOS
(Volts)
B88B9
B8893
B88100
B88101
200
200
100
200
BUZ10
BUZ10A
BUZ10B
BUZ11
BUZ11A
BUZ14
BUZ14A
BUZ14B
BUZ14C
BUZ14D
BUZ15
BUZ20
50
50
50
50
50
50
50
50
50
50
50
100
12.0
12.0
12.0
30.0
25.0
39.0
33.0
2B.0
14.0
12.0
45.0
12.0
BUZ20A
BUZ20B
BUZ21
BUZ23
BUZ23A
BUZ23B
BUZ24
BUZ24B
BUZ25
BUZ30
BUZ31
BUZ32
BUZ32A
100
100
100
100
100
100
100
100
100
200
200
200
150
BUZ32B
BUZ32C
BUZ33
BUZ33A
BUZ33B
BUZ34
BUZ35
BUZ35A
BUZ36
BUZ41A
BUZ41B
BUZ42
200
150
200
200
150
200
200
150
200
500
450
500
ROS(ON)
(Ohms)
Case
Style
Nearest GE
Equivalent
Part Number
CASE STYLE
TO-204
CASE STYLE
TO-220
10
VOS
(Volts)
(Amps)
@2SoC
TO-92
TO-39
TO-92
TO-92
DBOAN2
IRFF212
DBOAL2
DBOAN2
200
200
100
200
0.3
1.B
0.5
0.3
0.10
0.12
0.25
0.040
0.060
0.040
0.055
O.OBO
0.1B
0.25
0.030
0.20
TO-220
TO-220
TO-220
TO-220
TO-220
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-220
IRFF533
IRF533
IRF533
DB4EK2
IRF543
DB6FL2
IRF153
DB6EK2
DB6DK2
IRF133
D86FK2
IRF532
60
60
50
60
60
60
60
60
60
60
60
100
12.0
8.0
19.0
10.0
14.0
33.0
32.0
28.0
19.0
6.5
12.5
9.5
9.5
0.25
0.30
0.10
0.20
0.18
0.080
0.050
0.080
0.10
0.75
0.20
0.40
0.40
TO-220
TO-220
TO-220
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-220
TO-220
TO-220
TO-220
IRF532
D84CL2
D84DL2
IRF132
D86DL2
IRF152
IRF152
D86EL2
D86DL2
DB4CN2
D84DN2
D84DN2
D84DM2
7.5
7.5
7.2
7.5
7.5
14.0
9.9
9.9
22.0
4.5
4.5
4.0
0.60
0.60
0.75
0.60
0.60
0.20
0.40
0.40
0.12
1.5
1.5
2.0
TO-220
TO-220
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-220
TO-220
TO-220
IRF632
IRF633
IRF232
IRF232
IRF233
IRF242
D86DN2
DB5DM2
DB5EN2
DB4DR2
D85DR1
IRFB32
0.30
0.50
0.23
0.16
5.0
6.0
6.0
12.0
23
CASE STYLE
TO-237
Ros (ON)
(Ohms)
Case
Style
5.6
204
204
5.6
TO-237
TO-39
TO-237
TO-237
12.0
12.0
12.0
27.0
24.0
40.0
33.0
27.0
14.0
12.0
40.0
12.0
0.25
0.25
0.25
0.OB5
0.11
0.055
O.OBO
0.OB5
0.1B
0.25
0.055
0.25
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-204AE
TO-204AE
TO-204AE
TO-204AA
TO-204AA
TO-204AE
TO-220AB
100
100
100
100
100
100
100
100
100
200
200
200
150
12.0
8.0
14.0
12.0
14.0
33.0
33.0
27.0
14.0
5.0
9.0
9.0
9.0
0.25
0.30
0.18
0.25
0.18
O.OBO
0.080
0.085
0.18
0.80
0040
0.40
0040
TO-220AB
TO-220AB
TO-220AB
TO-204AA
TO-204AA
TO-204AE
TO-204AE
TO-204AE
TO-204AA
TO-220AB
TO-220AB
TO-220AB
TO-220AB
200
150
200
200
150
200
200
150
200
500
450
500
8.0
8.0
8.0
8.0
8.0
16.0
9.0
9.0
1B.0
4.5
4.5
4.0
0.60
0.60
0.50
0.60
0.50
0.22
0040
0040
0.1B
1.5
1.5
2.0
TO-220AB
TO-220AB
TO-204AA
TO-204AA
TO-204AA
TO-204AE
TO-204AA
TO-204AA
TO-204AE
TO-220AB
TO-220AB
TO-220AB
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
CASE STYLE
TO-204
TO-220
Siemens (Cont.)
Competitive
Part Number
VOS
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
Nearest GE
Equivalent
Part Number
VDS
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
BUZ42A
BUZ42B
BUZ42C
BUZ42D
BUZ44A
BUZ44B
BUZ45
BUZ45A
BUZ45B
BUZ45C
450
500
450
500
500
450
500
500
500
450
4.0
2.5
2.5
2.0
4.8
4.8
9.6
8.3
10.0
10.0
2.0
3.0
3.0
4.0
1.5
1.5
1.6
0.80
0.50
0.50
TO-220
TO-220
TO-220
TO-220
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
IRF833
D84CR2
D84CR1
IRF822
D86DR2
D86DR1
D86ER2
D86ER2
D86ER2
D86ER1
450
500
450
500
500
450
500
500
500
450
4.0
2.5
2.5
2.0
4.5
4.5
8.0
8.0
8.0
8.0
2.0
3.0
4.0
4.0
1.5
1.5
0.85
0.85
0.85
0.85
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BUZ46
BUZ46A
BUZ46B
BUZ60
BUZ60A
BUZ60B
BUZ60C
500
450
500
400
350
400
350
4.2
4.2
2.4
5.5
5.5
4.5
4.5
2.0
2.0
3.0
1.0
1.0
1.5
1.5
TO-204
TO-204
TO-204
TO-220
TO-220
TO-220
TO-220
IRF432
IRF433
D84CR1
D84D02
D84D01
IRF732
IRF733
500
450
500
400
350
500
350
4.0
4.0
2.5
5.5
5.5
4.5
4.5
2.0
2.0
3.0
1.0
1.0
1.5
1.5
TO-204AA
TO-204AA
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
BUZ60D
BUZ63
BUZ63A
.BUZ63B
BUZ63C
BUZ63D
BUZ64
BUZ64A
BUZ71
BUZ71A
BUZ72A
BUZ73A
BUZ74
BUZ74A
BUZ76
BUZ76A
400
400
350
400
350
400
400
350
50
50
100
200
500
500
400
400
3.0
5.9
5.9
4.5
4.5
3.0
10.0
10.0
12.0
12.0
9.0
5.8
2.4
2.0
1.8
1.0
1.0
1.5
1.5
1.8
0.40
0.40
0.10
0.12
0.25
0.60
3.0
4.0
1.8
2.5
TO-220
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-220
TO-220
TO-220
TO-220
TO-22O
TO-220
TO-220
TO-220
D84C02
D86D02
D86D01
IRF332
IRF333
D84D02
D86E02
D86E01
IRF533
IRF533
D84CL2
D84CN2
D84CR2
IRF822
D84C02
IRF722
400
400
350
400
350
400
400
350
60
60
100
200
500
500
400
400
3.0
5.5
5.5
4.5
4.5
3.0
10.0
10.0
12.0
12.0
8.0
5.0
2.5
2.0
3.0
2.5
1.8
1.0
1.0
1.5
1.5
1.8
0.55
0.55
0.25
0.25
0.30
0.80
3.0
4.0
1.8
2.5
TO-220AB
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-220AB
TO-204AA
TO-204AA
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
10
3~0
2.6
24
10
Power MOSFET
Cross-Reference
(Cont.)
SUPERTEX INC.
CASE STYLE
TO-39
CASE STYLE
TO-202
10
Competitive
Part Number
Vos
(Volts)
(Amps)
@2SoC
Ros (ON)
(Ohms)
Case
Style
CASE STYLE
TO-204
Nearest GE
Equivalent
Part Number
Vos
(Volts)
CASE STYLE
TO-220
CASE STYLE
TO-237
10
. (Amps)
@2SoC
Ros (ON)
(Ohms)
Case
Style
VN0104N2
VN0104N3
VN0104N4
VN0104N5
VN0106N2
VN0106N3
40
40
40
40
60
60
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
TO-39
TO-92
TO-202
TO-220
TO-39
TO-92
IRFF111
VN10KMA
VN40AFA
D84BK2
IRFF111
VN10KMA
60
60
40
60
60
60
3.5
0.75
1.3
4.0
3.5
0.75
0.60
5.0
5.0
0.60
0.60
5.0
TO-39
TO-237
TO-202
TO-220AB
TO-39
TO-237
VN0106N4
VN0106N5
VN0109N2
VN0109N3
60
60
90
90
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
TO-202
TO-220
TO-39
TO-92
VN67AFA
D84BK2
IRFF110
DBOAL2
60
60
100
100
1.6
4.0
3.5
0.50
3.5
0.60
0.60
2.4
TO-202
TO-220AB
TO-39
TO-237
VN0109N4
VN0109N5
VN0110N2
VN0110N3
VN0110N5
VN0114N2
VN0114N3
VN0114N5
90
90
100
100
100
140
140
140
4.0
4.0
3.0
3.0
3.0
3.0
3.0
3.0
4.0
4.0
8.0
8.0
8.0
B.O
8.0
8.0
TO-202
TO-220
TO-39
TO-92
TO-220
TO-39
TO-92
TO-220
IRFF112
BO
1.5
4.0
TO-202
IRFF112
DBOAL2
IRF512
IRFF223
D80AM2
D84BM2
100
100
100
150
150
150
3.0
0.50
3.5
3.0
0.30
2.5
O.BO
2.4
0.80
1.2
5.6
1.5
TO-39
TO-237
TO-220AB
TO-39
TO-237
TO-220AB
VN0116N2
VN0116N3
VN0116N5
VN0120N2
VN0120N3
VN0120N5
160
160
160
200
200
200
2.0
2.0
2.0
2.0
2.0
2.0
16.0
16.0
16.0
16.0
16.0
16.0
TO-39
TO-92
TO-220
TO-39
TO-92
TO-220
IRFF211
D80AM2
IRF613
IRFF210
DBOAN2
IRF612
150
150
150
200
200
200
2.2
0.30
2.0
2.2
0.30
2.0
1.5
5.6
2.4
1.5
5.6
2.4
TO-39
TO-237
TO-220AB
TO-39
TO-237
TO-220AB
VN0204N2
VN0204N5
40
40
10.0
10.0
2.0
2.0
TO-39
TO-220
IRFF131
D84CK2
60
60
8.0
B.O
0.1B
0.30
TO-39
TO-220AB
VN0206N2
VN0206N5
VN0210N2
VN0210N5
VN0215N2
VN0215N5
VN0220N2
VN0220N5
60
60
100
100
150
150
200
200
10.0
10.0
10.0
10.0
B.O
B.O
6.0
6.0
2.0
2.0
2.0
2.0
4.0
4.0
B.O
8.0
TO-39
TO-220
TO-39
TO-220
TO-39
TO-220
TO-39
TO-220
IRFF131
DB4CK2
IRFF130
D84CL2
IRFF231
IRF633
IRFF230
D84CN2
60
60
100
100
150
150
200
200
8.0
B.O
8.0
B.O
5.5
B.O
5.5
5.0
0.18
0.30
0.1B
0.30
0.40
0.60
0.40
O.BO
TO-39
TO-220AB
TO-39
TO-220AB
TO-39
TO-220AB
TO-39
TO-220AB
VN0330N1
VN0330N2
300
300
12.0
12.0
3.0
3.0
TO-204
TO-39
IRF353
IRFF331
350
350
13.0
3.5
0.40
1.0
TO-204AA
TO-39
VN0330N5
VN0335N1
VN0335N2
VN0335N5
300
350
350
350
12.0
12.0
12.0
12.0
3.0
3.0
3.0
3.0
TO-220
TO-204
TO-39
TO-220
D84EQ1
IRF353
IRFF331
D84EQ1
350
350
350
350
10.0
13.0
3.5
10.0
0.55
0.40
1.0
0.55
TO-220AB
TO-204AA
TO-39
TO-220AB
VN0340N1
VN0340N2
VN0340N5
VN0345N1
VN0345N2
VN0345N5
VN0350N1
VN0350N2
VN0350N5
400
400
400
450
450
450
500
500
500
12.0
12.0
12.0
12.0
12.0
12.0
B.O
B.O
B.O
3.0
3.0
3.0
3.0
3.0
3.0
6.0
6.0
6.0
TO-204
TO-39
TO-220
TO-204
TO-39
TO-220
TO-204
TO-39
TO-220
IRF352
IRFF330
DB4EQ2
IRF453
IRFF431
D84ER1
DB6ER2
IRFF430
DB4ER2
400
400
400
450
450
450
500
500
500
13.0
3.5
10.0
12.0
2.75
B.O
B.O
2.75
B.O
0.40
1.0
0.55
0.50
1.5
0.B5
0.B5
1.5
0.B5
TO-204AA
TO-39
TO-220AB
TO-204AA
TO-39
TO-220AB
TO-204AA
TO-39
TO-220AB
25
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
TO-39
Supertex Inc. (Cont.)
10
Competitive
Part Number
Vos
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
VN0430N1
VN0435N1
VN0440N1
VN0445N1
VN0450N1
300
350
400
450
500
40.0
40.0
40.0
40.0
24.0
0.75
0.75
0.75
0.75
1.5
TO-204
TO-204
TO-204
TO-204
TO-204
VN0530N2
VN0530N3
VN0535N2
VN0535N3
VN0540N2
VN0540N3
VN0545N2
VN0545N3
300
300
350
350
400
400
450
450
50.0
50.0
50.0
50.0
50.0
50.0
50.0
50.0
VN1106N1
VN1106N2
VN1106NS
VN1110N1
VN1110N2
VN1110NS
VN115SN1
VN1156N2
VN115SNS
VN1120N1
VN1120N2
VN1120N5
60
SO
60
100
100
100
150
150
1S0
200
200
200
16.0
1S.0
16.0
16.0
16.0
16.0
12.0
12.0
12.0
8.0
8.0
8.0
VN1204N1
VN1204N2
VN1204N5
VN1206N1
VN120SN2
VN1206NS
40
40
40
SO
SO
Nearest GE
Equivalent
Part Number
CASE STYLE
TO-204
CASE STYLE
TO-220
CASE STYLE
TO-237
10
VOS
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
D86FQ1
D86FQ1
D86FQ2
D86FR1
D86FR2
350
350
400
450
500
15.0
15.0
15.0
13.0
13.0
0.30
0.30
0.30
0.40
0.40
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-204AA
TO-39
TO-92
TO-39
TO-92
TO-39
TO-92
TO-39
TO-92
IRFF313
D80AN2
IRFF313
D80AN2
IRFF312
D80AN2
IRFF423
D80AN2
350
200
350
200
400
200
450
200
5.0
5.6
5.0
5.6
5.0
5.6
4.0
S.6
TO-39
TO-237
TO-39
TO-237
TO-39
TO-237
TO-39
TO-237
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
4.0
TO-204
TO-39
TO-220
. TO-204
TO-39
TO-220
TO-204
TO-39
TO-220
TO-204
TO-39
TO-220
D86DK2
IRFF131
D84DK2
D86DL2
IRFF130
D84DL2
D8SDM2
IRFF231
D84DM2
IRF232
IRFF230
IRF632
60
60
SO
100
100
100
150
1S0
1S0
200
200
200
14.0
8.0
14.0
14.0
8.0
14.0
9.0
5.5
9.0
8.0
5.S
8.0
0.18
0.18
0.18
0.18
0.18
0.18
0.40
0.40
0.40
0.60
0.40
O.SO
TO-204AA
TO-39
TO-220AB
TO-204AA
TO-39
TO-220AB
TO-204AA
TO-39
TO-220AB
TO-204AA
TO-39
TO-220AB
60
24.0
24.0
24.0
24.0
24.0
24.0
0040
0040
0040
0040
0040
0040
TO-204
TO-39
TO-220
TO-204
TO-39
TO-220
IRF143
IRFF131
IRF543
IRF143
IRFF131
IRF543
60
SO
SO
60
SO
60
24.0
8.0
24.0
24.0
8.0
24.0
0.11
0.18
0.11
0.11
0.18
0.11
TO-204AE
TO-39
TO-220AB
TO-204AE
TO-39
TO-220AB
VN1210N1
VN1210N2
VN1210NS
VN1215N1
VN1215N2
VN1215N5
VN121SN1
VN1216N2
VN121SN5
VN1220N1
100
100
100
1S0
150
150
1S0
160
1S0
200
24.0
24.0
24.0
20.0
20.0
20.0
16.0
16.0
16.0
1S.0
0040
0040
0040
0.7S
0.75
0.75
2.0
2.0
2.0
2.0
TO-204
TO-39
TO-220
TO-204
TO-39
TO-220
TO-204
TO-39
TO-220
TO-204
IRF142
IRFF130
IRFS42
D86EM2
IRFF231
D84EM2
IRF243
IRFF231
IRF643
IRF242
100
100
100
150
150
150
150
150
150
200
24.0
8.0
24.0
18.0
5.5
18.0
1S.0
5.5
1S.0
16.0
0.11
0.18
0.11
0.18
0.40
0.18
0.22
TO-204AE
TO-39
TO-220AB
TO-204AE
TO"39
TO-220AB
TO-204AE
TO-39
TO-220AB
TO-204AE
VN1220N2
VN1220NS
200
200
1S.0
1S.0
2.0
2.0
TO-39
TO-220
IRFF230
IRF642
200
200
5.5
16.0
0040
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
26
1.15
0.30
1.15
0.30
1.15
0.30
1.4
0.30
0040
0.22
0.22
0.22
TO-39
TO-220AB
Power MOSFET
Cross-Reference (Cont.)
CASE STYLE
TO-39
SlUIpertex Inca (Cont.)
10
Nearest GE
Equivalent
Part Number
10
Competitive
Part Number
Vos
(Volts)
(Amps)
@2SoC
RoS (ON)
(Ohms)
VN1304N2
VN1304N3
VN1306N2
VN1306N3
VN1310N2
VN1310N3
VN1315N2
VN1315N3
40
40
60
60
100
100
150
150
2.0
2.0
2.0
2.0
2.0
2.0
1.5
1.5
10.0
10.0
10.0
10.0
10.0
10.0
20.0
20.0
TO-39
TO-92
TO-39
TO-92
TO-39
TO-92
TO-39
TO-92
IRFF113
VN10KMA
IRFF113
VN10KMA
IRFF112
OBOAL2
IRFF213
OBOAM2
60
60
60
60
100
100
150
150
VN1320N2
VN1320N3
200
200
1.0
1.0
40.0
40.0
TO-39
TO-92
IRFF212
OBOAN2
200
200
Competitive
Part Number
Vos
(Volts)
(Amps)
@2SoC
Ros (ON)
(Ohms)
Case
Style
80110280
801106AO
80110780
80111280
80111380
250
60
100
200
200
0.25
0.25
2.0
0.5
0.5
10.0
5.0
4.0
7.0
10.0
TO-92
TO-237
TO-92
TO-92
TO-92
80111780
80112280
80112480
80120280
60
200
60
200
2.0
0.5
1.0
0.04
2.5
10.0
5.0
250
TO-92
TO-92
TO-92
TO-92
Case
Style
10
Nearest GE
Equivalent
Part Number
CASE STYLE
TO-237
Vos
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
3.0
0.75
3.0
0.75
3.0
0.50
1.B
0.30
0.6
5.0
0.6
5.0
0.6
2.4
2.4
5.6
TO-39
TO-237
TO-39
TO-237
TO-39
TO-237
TO-39
TO-237
1.B
0.30
2.4
5.6
TO-39
TO-237
10
Vos
(Volts)
(Amps)
@2SoC
ROS(ON)
(Ohms)
Case
Style
OBOAN2
OBOAK2
OBOAL2
OBOAN2
OBOAN2
200
60
100
200
200
0.30
0.50
0.50
0.30
0.30
5.6
2.4
2.4
5.6
5.6
TO-237
TO-237
TO-237
TO-237
TO-237
VN10KMA
OBOAN2
VN10KMA
OBOAN2
60
200
60
200
0.75
0.30
0.75
0.30
5.0
5.6
5.0
5.6
TO-237
TO-237
TO-237
TO-237
27
Power MOSFET
Cross-Reference
(Cont.)
CASE STYLE
TO-39
SILICONIX
CASE STYLE
TO-202
10
CASE STYLE
TO-204
Yo
RpS(ON)
(Ohms)
Case
Style
Nearest GE
Equivalent
Part Number
5.0
5.0
5.0
5.0
2.5
2.5
5.0
5.0
3.0
3.0
TO-52
TO-237
TO-52
TO-237
TO-204
TO-39
TO-220
TO-202
TO-220
TO-202
IRFF113
VN10KMA
D80AK2
D80AK2
IRF513
VN35AJ;lA
IRF513
VN40AFA
IRF513
VN46AFA
10.0
1.9
1.7
2.0
1.0
1.8
1.6
1.3
1.7
1.5
0.4
3.0
3.0
3.5
3.5
3.5
3.5
5.0
4.0
4.0
TO-204
TO-220
TO-202
TO-220
TO-39
TO-220
TO-202
TO-202
TO-220
TO-202
IRF133
IRF513
VN66AFA
IRF513
VN67ABA
IRF513
VN67AFA
VNBOAFA
DB4BL2
VN8BAFA
60
60
60
60
60
60
60
80
100
BO
BO
90
90
90
90
30
30
40
40
40
1.6
1.7
O.B
1.B
0.9
2.5
0.7
18.0
18.0
16.0
4.5
5.0
5.0
4.5
4.5
1.2
1.2
0.12
0.12
0.15
TO-220
TO-204
TO-39
TO-204
TO-39
TO-220
TO-237
TO-204
TO-220
TO-204
IRF512
IRF512
VN90ABA
IRF512
VN90ABA
IRF513
D80AK2
D86DK2
D84DK2
D86DK2
40
60
60
60
60
60
60
80
80
80
16.0
1B.0
18.0
16.0
16.0
0.4
0.2
14.0
14.0
12.0
0.15
0.12
0.12
0.15
0.15
3.0
5.0
0.18
0.18
0.25
TO-220
TO-204
TO-220
TO-204
TO-220
TO-237
TO-92
TO-204
TO-204
TO-204
DB4DK2
DB6DK2
DB4DK2
DB6DK2
DB4DK2
D80AK2
DBOAK2
D86DL2
D84DL2
D86DL2
Competitive
Part Number
Vos
(Volts)
VN10KE
VN10KM
VN10LE
VN10LM
VN35AA
VN35AB
VN40AD
VN40AF
VN46AD
VN46F
60
60
60
60
35
35
40
40
40
40
VN64GA
VN66AD
VN66AF
VN67AA
VN67AB
VN67AD
VN67AF
VNBOAF
VNB8AD
VNBBAF
60
60
60
60
60
60
60
BO
BO
BO
VNB9AD
VN90AA
VN90AB
VN99AA
VN99AB
VN0300D
VN0300M
VN0400A
VN0400D
VN0401A
VN0401 0
VN0600A
VN0600D
VN0601A
VN0601D
VN0606M
VN0610L
VNOBOOA
VNOBOOD
VN0801 A
(Amps)
@2SoC
0.2
0.75
0.3
0.3
2.0
1.2
1.5
1.3
1.9
1.6
28
CASE STYLE
TO-220
(Amps)
@25°C
CASE STYLE
TO-237
ROS(ON)
(Ohms)
Case
Style
O.B
5.0
O.B
2.4
0.8
2.5
0.8
5.0
O.B
3.0
TO-39
TO-237
TO-39
TO-237
TO-220AB
TO-39
TO-220AB
TO-202
TO-220AB
TO-202
12.0
3.5
1.7
3.5
1.0
3.5
1.6
1.3
4.0
1.5
0.25
O.B
3.0
O.B
3.5
0.8
3.5
5.0
0.6
4.0
TO-204M
TO-220AB
TO-202
TO-220AB
TO-39
TO-220AB
TO-202
TO-202
TO-220AB
TO-202
100
100
100
100
100
60
60
60
60
60
3.5
3.5
1.0
3.5
1.0
3.5
0.5
. 14.0
14.0
14.0
O.B
0.8
5.0
0.8
5.0
O.B
2.4
0.1B
0.1B
0.1B
TO-220AB
TO-220AB
TO-39
TO-220AB
TO-39
TO-220AB
TO-237
TO-204AA
TO-220AB
TO-204AA
60
60
60
60
60
60
60
100
100
100
14.0
14.0
14.0
14.0
14.0
0.5
0.5
14.0
14.0
14.0
0.1B
0.18
0.1B
0.18
0.18
2.4
2.4
0.18
0.18
0.1B
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-237
TO-237
TO-204AA
TO-220AB
TO-204AA
VOS
(Volts)
60
60
60
60
60
35
60
40
60
40
3.0
0.75
3.0
0.5
3.5
1.2
3.5
1.3
3.5
1.6
[pltQ)wcew M OSf'ET
Ct!"@$$ ... Re'fference (Cant)
CASE STYLE
TO-39
Io
Competitive
Part Number
(Ohms)
Case
Style
Nearest GE
Equivalent
Part Number
0.25
4.0
0.18
0.18
0.25
0.25
0.18
0.18
0.25
0.25
TO-220
TO-237
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
6.0
6.0
6.0
6.0
10.0
10.0
6.0
6.0
6.0
6.0
0.16
0.25
0.15
0.25
0.25
0.80
1.4
0.21
0.30
0.16
0.25
6.0
6.0
5.0
5.0
6.0
6.0
5.0
5.0
4.5
4.5
4.0
4.0
4.5
4.5
4.0
4.0
8.0
B.O
6.5
CASE STYLE
TO-220
CASE STYLE
TO-237
10
ROS(ON)
(Volts)
(Amps)
@25°C
(Ohms)
Case
Style
D84DL2
D80AL2
D86DL2
D84DL2
IRF132
IRF532
DB6DM2
DB4DM2
DB6DM2
DB4DM2
100
100
100
100
100
100
150
150
150
150
14.0
0.5
14.0
14.0
12.0
12.0
9.0
9.0
9.0
9.0
0.18
2.4
0.1B
0.1B
0.25
0.25
0.4
0.4
0.4
0.4
TO-220AB
TO-237
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-39
TO-220
TO-92
TO-237
TO-92
TO-237
TO-39
TO-220
TO-92
TO-237
IRF213
IRF611
DOBAM2
DBOAM2
DBOAM2
DBOAM2
IRFF212
D84BN2
DBOAN2
DBOAN2
150
150
150
150
150
150
200
200
200
200
1.B
2.5
0.3
0.3
0.3
0.3
1.B
2.5
0.3
0.3
2.4
1.5
5.6
5.6
5.6
5.6
2.4
1.5
5.6
5.6
TO-39
TO-220AB
TO-237
TO-237
TO-237
TO-237
TO-39
TO-220AB
TO-237
TO-237
10.0
10.0
7.5
7.5
7.6
6.0
6.0
6.0
6.0
10.0
TO-92
TO-237
TO-92
TO-237
TO-237
TO-39
TO-220
TO-92
TO-237
TO-92
DBOAN2
DBOAN2
D80AK2
DBOAK2
DBOAK2
IRFF313
IRF713
D80AN2
DBOAN2
DBOAN2
200
200
60
60
60
350
350
200
200
200
0.3
0.3
0.5
0.5
0.5
1.1;,
1.3
0.3
0.3
0.3
5.6
5.6
2.4
2.4
2.4
5.0
5.0
5.6
5.6
5.6
TO-237
TO-237
TO-237
TO-237
TO-237
TO-39
TO-220AB
TO-237
TO-237
TO-237
10.0
1.0
1.0
1.5
1.5
1.0
1.0
1.5
1.5
1.5
1.5
2.0
2.0
1.5
1.5
2.0
2.0
1.0
1.0
1.5
TO-237
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
TO-204
TO-220
TO-204
TO-204
TO-204
DBOAN2
DB6D01
DB4D01
IRF333
IRF733
D86D02
D84D02
IRF332
IRF732
D86DR1
DB4DR1
IRF433
IRF833
DB6DR2
DB6DR2
IRF432
IRFB32
IRF343
IRF342
IRF443
200
350
350
350
350
400
400
400
400
450
450
450
450
500
500
500
500
350
400
450
0.3
5.5
5.5
4.5
4.5
5.5
5.5
4.5
4.5
4.5
4.5
4.0
4.0
4.5
4.5
4.0
4.0
B.O
B.O
7.0
5.6
1.0
1.0
1.5
1.5
1.0
1.0
1.5
1.5
1.5
1.5
2.0
2.0
1.5
1.5
2.0
2.0
O.B
0.8
1.1
TO-237
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-220AB
TO-204AA
TO-204AA
TO-204AA
Ros (ON)
(Volts)
(Amps)
@25°C
VN0801D
VN0808M
VN1000A
VN1000D
VN1001A
VN1001D
VN1200A
VN1200D
VN1201A
VN1201D
80
80
100
100
100
120
120
120
120
120
12.0
0.35
14.0
14.0
12.0
12.0
14.0
14.0
12.0
12.0
VN1206B
VN1206D
VN1206L
VN1206M
VN1210L
VN1210M
VN1706B
VN1706D
VN1706L
VN1706M
120
120
120
120
120
120
170
170
170
170
O.BO
1.4
0.21
0.3
0.16
0.25
0.80
1.4
0.21
0.30
VN1710L
VN1710M
VN2222L
VN2222KM
VN2222LM
VN2406B
VN2406D
VN2406L
VN2406M
VN2410L
170
170
60
60
60
240
240
240
240
240
VN2410M
VN3500A
VN3500D
VN3501A
VN3501D
VN4000A
VN4000D
VN4001A
VN4001D
VN4501A
VN4501D
VN4502A
VN4502D
VN5001A
VN5001D
VN5002A
VN5002D
VNL001A
VNM001A
VNN003A
240
350
350
350
350
400
400
400
400
450
450
450
450
500
500
500
500
350
400
450
Ves
CASE STYLE
TO-204
29
Ves
30
GE
BIPOLAR POWER
TRANSISTOR
SELECTOR GUIDE
31
POWER TRANSISTORS
COMPLEMENTARY PAIRS
Ie
CONT.
(A)
GE Device
Electrical Characteristics (@ Ta = 25°C)
VCEO
Volts Min .• Max.
hFE
@lC
Package
Outline
Page
500mA
500mA
500mA
500mA
500mA
500mA
SOmA
SOmA
SOmA
SOmA
SOmA
SOmA
6.25
6.25
6.25
6.25
6.25
6.25
TO-202
TO-202
TO-202
TO-202
TO-202
TO-202
375
375
375
375
375
37S
1.0A
1.0A
1.0A
0.1A
0.1A
0.1A
S.O
S.O
S.O
TO-202
TO-202
TO-202
3S3
3S3
3S3
0.5
O.S
0.5
0.5
O.S
1A 100mA
1A SOmA
1A SOmA
1A 100mA
1A SOmA
12.5
12.5
12.5
12.5
12.5
TO-202
TO-202
TO-202
TO-202
TO-202
399
399
399
399
399
1V
1V
0.5
0.5
O.S
O.S
O.S
1A SOmA
1A 100mA
1A SOmA
1A SOmA
1A 100mA
12.5
12.S
12.S
12.S
12.S
TO-202
TO-202
TO-202
TO-202
TO-202
399
399
399
399
399
1.0A
04001
04002
04004
04005
04007
0400S
04101
04102
04104
04105
04107
0410S
30
30
45
45
60
60
50
120
50
120
50
120
150
360
150
360
150
360
0.1A
0.1A
0.1A
0.1A
0.1A
0.1A
2.0V
2.0V
2.0V
2.0V
2.0V
2.0V
0.5
0.5
0.5
0.5
0.5
0.5
2.0A
040E1
040E5
040E7
041E1
041ES
041E7
30
60
SO
50
SO
50
-
0.1A
0.1A
0.1A
2.0V
2.0V
2.0V
1.0
1.0
1.0
3.0A
042C1
042C2
042C3
042C4
042CS
043C1
043C2
043C3
043C4
043C5
30
30
30
45
45
2S
100
40
25
100
-
200mA
200mA
200mA
200mA
200mA
1V
1V
1V
1V
1V
042C6
042C7
042CS
042C9
042C10
043C6
043C7
043CS
043C9
043C10
4S
60
60
60
SO
40
25
100
40
25
1V
042C11
042C12
043C11
043C12
SO
SO
100
40
044C1
044C2
044C3
044C4
044CS
045C1
04SC2
04SC3
045C4
04SCS
30
30
30
4S
4S
2S
100
40
2S
100
044C6
044C7
044CS
044C9
044C10
04SC6
045C7
04SCS
04SC9
04SC10
4S
60
60
60
SO
40
25
100
40
2S
044C11
044C12
04SC11
04SC12
SO'
SO
100
40
044VM1
044VM4
044VM7
044VM10
04SVM1
04SVM4
045VM7
04SVM10
30
45
60
SO
40
40
40
40
044H1
044H2
044H4
044HS
044H7
04SH1
04SH2
04SH4
04SHS
04SH7
30
30
4S
4S
60
044HS
044H10
044H11
04SHS
045H10
045H11
044VH1
044VH4
044VH7
044VH10
04SVH1
04SVH4
04SVH7
04SVH10
4.0A
S.OA
10.0A
15.0A
-
220
120
TO-220
Ie
PNP
220
120
CASE STYLE
TO-202
PD
TC = 25°C
Max. (W)
VCE(SAT)
Max. (V)
@IC
NPN
-
CASE STYLE
@VCE
-
200mA
200mA
200m A
200mA
200mA
220
120
200mA
200mA
1V
1V
O.S
O.S
1A SOmA
1A SOmA
12.S
12.S
TO-202
TO-202
399
399
-
200mA
200mA
200mA
200mA
200mA
1V
1V
1V
O.S
O.S
O.S
O.S
O.S
1A 100mA
1A SOmA
1A SOmA
1A 100mA
1A SOmA
30.0
30.0
30.0
30.0
30.0
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
407
407
407
407
407
-
200mA
200mA
200mA
200mA
200mA
1V
1V
1V
1V
1V
O.S
O.S
O.S
O.S
O.S
1A SOmA
1A 100mA
1A SOmA
1A SOmA
1A 100mA
30.0
30.0
30.0
30.0
30.0
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
407
407
407
407
407
220
120
200mA
200mA
1V
O.S
O.S
1A SOmA
1A SOmA
30.0
30.0
TO-220AB
TO-220AB
407
407
0.4
0.4
0.4
0.4
4A
4A
4A
4A
0.2A
0.2A
0.2A
0.2A
SO.O
SO.O
SO.O
SO.O
TO-220AB
TO-220AB
TO-220AB
TO-220AB
469
469
469
469
1.0
1.0
1.0
1.0
1.0
SA
SA
SA
SA
SA
O.SA
O.4A
O.SA
O.4A
O.SA
SO.O
SO.O
SO.O
SO.O
SO.O
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
431
431
431
431
431
1.0
1.0
1.0
SA
8A
SA
0.4A
0.8A
O.4A
SO.O
SO.O
SO.O
TO-220AB
TO-220AB
TO-220AB
431
431
431
0.4
0.4
0.4
0.4
8A
8A
8A
8A
O.4A
O.4A
O.4A
O.4A
S3.0
S3.0
83.0
S3.0
TO-220AB
TO-220AB
TO-220AB
TO-220AB
4S7
4S7
4S7
457
220
120
220
120
-
220
120
220
120
-
4A
4A
4A
4A
40
40
20
40
20
-
4A
4A
4A
4A
4A
60
SO
SO
40
20
40
-
4A
4A
4A
30
4S
60
80
20
20
20
20
-
4A
4A
4A
4A
-
-
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
1V
32
GENERAL PURPOSE
POWER
TRANSISTORS/DARIlJNGTONS
IC
CONT.
(A)
1
1
1
1
1
1
1
1
3
3
3
3
3
3
3
3
5
5
5
5
5
5
6
6
6
6
6
6
6
6
7
10
15
15
15
16
20
30
CASE STYLE
TO-247S
Electrical Cha.racteristics (@ Ta = 25°C)
GE Device
TIP30
TIP29
TIP30A
TIP29A
TIP30B
TIP29B
TIP30C
TIP29C
TIP31
TIP32
TIP31 A
TIP32A
TIP31B
TIP32B
TIP31C
TIP3~'C
TIP120
TIP125
TIP126
TIP121
TIP127
TIP122
TIP41
TIP42
TIP41 A
TIP42A
TIP41B
TIP42B
TIP41C
TIP42C
2N6292
GE3055P
2N3055
2N6487
2N6547
2N3773
2N3772
2N3771
Type
PNP
NPN
PNP
NPN
PNP
NPN
I NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPND
PNPD
PNPD
NPND
PNPD
NPND
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
hFE
VCEO
Volts Min. - Max.
@IC
40
40
60
60
80
80
100
100
40
40
60
60
80
80
100
100
60
60
80
80
100
100
40
40
60
60
80
80
100
100
70
80
60
60
400
140
60
40
15
15
15
15
15
15
15
15
I 10
10
10
10
10
10
10
10
1000
1000
1000
1000
1000
1000
15
15
15
15
15
15
15
15
30
20
20
20
12
15
15
15
75
75
75
75
75
75
75
75
50
50
50
50
50
50
50
50
-
75
75
75
75
75
75
75
75
150
100
70
150
60
60
60
60
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
4.0
4.0
5.0
5.0
8.0
10.0
15.0
VCE(SAT)
@IC
@VCE Max. (V)
Is
0.7
0.7
0.7
0.7
0.7
0.7
0.7
0.7
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
2.0
2.0
2.0
2.0
2.0
2.0
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.1
1.1
1.3
1.5
1.4
1.4
2.0
0.125
0.125
0.125
0.125
0.125
0.125
0.125
0.125
0.375
0.375
0.375
0.375
0.375
0.375
0.375
0.375
0.012
0.012
0.012
0.012
0.012
0.012
0.600
0.600
0.600
0.600
0.600
0.600
0.600
0.600
0.200
0.400
0.400
0.500
2.0
0.800
1.0
1.5
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
3.0
3.0
3.0
3.0
3.0
3.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
2.0
4.0
4.0
4.0
33
1
1
1
1
1
1
1
1
3
3
3
3
3
3
3
3
3
3
3
3
3
3
6
6
6
{)
6
6
6
6
2
4
4
5
10
8
10
15
CASE STYLE
TO-204
CASE STYLE
TO-220
Po
TC = 25°C Package
Malt. (W) Outline
30
30
30
30
30
30
30
.30
40
40
40
40
40
40
40
40
65
65
65
65
65
65
65
65
65
65
65
65
65
65
40
70
115
75
175
150
150
150
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-247S
TO-204
TO-220AB
TO-204
TO-204
TO-204
TO-204
Page
775
771
775
771
775
771
775
771
779
783
779
783
779
783
779
783
759
765
765
759
765
759
787
791
787
791
187
791
787
791
811
693
795
815
819
807
803
799
HIGH VOLTAGE
POWER TRANSISTORS
IC
CONT.
(A)
CASE STYLE
TO-202
CASE STYLE
TO-204
Electrical Characteristics (@ Ta
GE Device
Type
VCEO
Volls Min. - Max.
hFE
@Ic
@VCE
= 25°C)
VCE(SAT)
Max. (V)
@IC
CASE STYLE
TO-218
CASE STYLE
TO-220
Po
Package
Outline
Page
Is
TC = 25°C
Max. (W)
TO-202
TO-202
TO-202
TO-202
TO-202
395
395
395
395
395
0.1
0.1
0.1
0.1
0.1
D40V1
D40V2
D40V3
D40V4
D40V5
NPN
NPN
NPN
NPN
NPN
250
250
300
300
350
30
60
30
60
30
90
180
90
180
90
0.02
0.02
0.02
0.02
0.02
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
0.020
0.020
0.020
0.020
0.020
0.002
0.002
0.002
0.002
0.002
9.0
9.0
9.0
9.0
9.0
0.1
2.0
2.0
2.0
2.0
D40V6
D44T1
D44T2
D44T3
D44T4
NPN
NPN
NPN
NPN
NPN
350
250
250
300
300
60
30
75
30
75
180
0.02
0.50
0.50
0.50
0.50
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
0.020
0.5
0.5
0.5
0.5
0.002
0.050
0.050
0.050
0.050
9.0
31.2
31.2
31.2
31.2
TO-202
TO-220AB
TO-220AB
TO-220AB
TO-220AB
395
443
443
443
443
2.0
2.0
2.0
4.0
4.0
D44TD3
D44TD4
D44TD5
D4401
D4403
NPN
NPN
NPN
NPN
NPN
300
350
400
125
175
5
5
5
20
20
-
2.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
00400
00400
00400
0.200
0.200
50.0
50.0
50.0
31.2
31.2
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
447
447
447
439
439
4.0
4.0
4.0
4.0
4.0
D4405
MJE13004
MJE13005
GE13070P
MJE13070
NPN
NPN
NPN
NPN
NPN
225
300
400
400
400
20
10
10
8
8
2.0
1.0
1.0
3.0
3.0
10.0
5.0
5.0
5.0
5.0
1.0
0.5
0.5
1.0
1.0
2.0
1.0
1.0
3.0
3.0
0.200
0.2
0.2
0.6
0.6
31.2
75.0
75.0
100.0
80.0
TO-220AB
TO-220AB
TO-220AB
TO-218
TO-220AB
439
715
719
681
747
4.0
4.0
8.0
8.0
8.0
MJE13071
GE13071P
MJE13006
GE13080T
MJE13007
NPN
NPN
NPN
NPN
NPN
450
450
300
400
400
8
8
8
8
8
3.0
3.0
2.0
5.0
2.0
5.0
5.0
5.0
3.0
5.0
1.0
1.0
1.0
1.0
1.0
3.0
3.0
2.0
5.0
2.0
0.6
0.6
004
80.0
100.0
80.0
90.0
80.0
TO-220AB
TO-218
TO-220
TO-220AB
TO-220
747
681
723
685
729
8.0
8.0
8.0
12.0
12.0
GE13080P
GE13081T
GE13081P
MJE13008
MJE13009
NPN
NPN
NPN
NPN
NPN
400
450
450
300
400
8
8
8
8
8
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
110.0
90.0
110.0
100.0
100.0
TO-218
TO-220AB
TO-218
TO-220AB
TO-220AB
683
685
683
735
741
12.0
12.0
12.0
12.0
15.0
D44T01
D46T01
D44T02
D46T02
D64VS3
NPN
NPN
NPN
NPN
NPN
400
400
450
450
300
8
8
8
8
10
40
40
40
40
5.0
5.0
5.0
5.0
10.0
5.0
5.0
5.0
5.0
2.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
15.0
1.0
1.0
1.0
1.0
2.5
100.0
110.0
100.0
110.0
195.0
TO-220AB
TO-218
TO-220AB
TO-218
TO-204
453
481
453
481
523
15.0
15.0
15.0
15.0
15.0
2N6676
2N6677
D64VS4
D64VS5
2N6678
NPN
NPN
NPN
NPN
NPN
300
350
350
400
400
8
8
10
10
8
-
15.0
15.0
10.0
10.0
15.0
3.0
3.0
2.0
2.0
3.0
1.5
1.5
1.0
1.0
1.5
15.0
15.0
15.0
15.0
15.0
3.0
3.0
2.5
2.5
3.0
175.0
175.0
195.0
195.0
175.0
TO-204
TO-204
TO-204
TO-204
TO-204
823
823
523
523
823
15.0
15.0
20.0
20.0
MJH13090
MJH13091
GE13100P
GE13101P
NPN
NPN
NPN
NPN
400
450
400
450
8
8
8
8
-
10.0
10.0
15.0
15.0
3.0
3.0
3.0
3.0
1.0
1.0
1.0
1.0
10.0
10.0
15.0
15.0
2.0
2.0
3.0
3.0
125.0
125.0
125.0
125.0
TO-218
TO-218
TO-218
TO-218
753
753
691
691
175
175
-
-
60
60
60
60
40
40
-
40
40
34
004
1.0
VERY tT-UGH
POWER
Ie
COM!PllEMrENTARY
CASE STYLE
CASE STYLE
TO-202
TO-220
[)ARl~NGl'ON TRANS~Sl'ORS
GE Device
CONT.
(A)
NPN
PNP
O.SA
0.5A
0.5A
040C1
040C4
040C7
-
2.0A
040Kl
040K2
040K3
040K4
6.0A
10.0A
GA~N
Electrical Characteristics (@ Ta
VCEO
Volts Min. - Max.
hFE
@IC
@VCE
=25°C)
VCE(SAT)
Max. (V)
@IC
Po
Is
TC =25°C
Max. (W)
Package
Outline
Page
6.2S
6.2S
6.2S
TO-202
TO-202
TO-202
371
371
371
200mA
200mA
200mA
SV
SV
SV
1.S
1.S
1.5
SOOmA
SOOmA
SOOmA
O.SmA
O.SmA
O.SmA
-
200mA
200mA
200mA
200mA
5V
SV
SV
SV
1.S
1.S
1.5
1.5
1.SA
1.SA
1.0A
1.0A
3.0mA
3.0mA
2.0mA
2.0mA
10.0
10.0
10.0
10.0
TO-202
TO-202
TO-202
TO-202
391
391
391
391
2K
2K
2K
2K
2K
-
1A
lA
1A
1A
1A
2V
2V
2V
2V
2V
1.S
1.S
1.S
1.5
1.S
3A
3A
3A
3A
3A
3.0mA
3.0mA
3.0mA
3.0mA
3.0mA
30.0
30.0
30.0
30.0
30.0
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
41S
415
41S
41S
41S
2K
1K
1K
1K
-
-
1A
SA
SA
5A
2V
5V
5V
SV
1.S
1.S
1.5
1.5
3A 3.0mA
SA 1O.0mA
SA 1O.0mA
5A 10.0mA
30.0
50.0
SO.O
SO.O
TO-220AB
TO-220AB
TO-220AB
TO-220AB
41S
423
423
423
30
40
50
10K
10K
10K
60K
60K
60K
041K1
041K2
041K3
041K4
30
SO
30
SO
10K
10K
10K
10K
-
04401
04402
04403
04404
0440S
Q4501
04502
04S03
04S04
04S0S
40
40
60
60
80
04406
044E1
044E2
044E3
04S06
045E1
04SE2
04SE3
80
40
60
80
-
35
HIGH VOLTAGE
POWER DARLINGTON TRANSISTORS
Ie
CONT.
(A)
10
10
10
10
10
10
10
20
20
20
20
20
26
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
40
40
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
CASE STYLE CASE STYLE
0-66
TO-204
Electrical Characteristics (@ Ta = 25°C)
GE Device
GE10002
GE10006
GE10007
GE10003
GE6251
GE6252
GE6253
GE5060
GE5062
GE6060
GE10004
GE10000
0660S5
GE5061
GE6061
064ES5
GE10005
GE10001
0640S5
066ES5
GE10008
0660S6
0640S7
066ES6
GE6062
0640S6
064ES6
066ES7
GE10009
064ES7
0660S7
GE10022
GE10023
0660V5
064EV6
066GV5
064EV7
0640V5
064EV5
066EV5
GE10015
0660V6
066EV6
.064DV6
066GV6
066GV7
GE10016
066EV7
D66DV7
064DV7
066EW1
D66DW1
D660W2
D66EW2
D66EW3
Type
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPND
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPNO
NPND
NPND
NPND
NPNO
NPNO
NPND
hFE
VCEO
Volts Min. - Max.
@IC
350
350
400
400
400
450
500
350
450
350
350
350
400
400
400
400
400
400
400
400
450
450
500
450
450
450
450
500
500
500
500
350
400
400
450
400
500
400
400
400
400
450
450
450
450
500
500
500
500
500
600
600
650
650
700
30
30
30
30
60
60
60
40
40
30
40
40
40
40
30
40
40
40
40
40
30
40
40
40
30
40
40
40
30
40
40
50
50
50
50
50
50
50
50
50
25
50
50
50
50
50
25
50
50
50
25
25
25
25
25
300
300
300
300
-
-
400
400
-
400
400
-
300
-
-
300
-
-
-
-
-
-
-
-
-
@VCE
5
5
5
5
3
3
3
15
15
15
10
10
20
15
15
20
10
10
20
20
10
20
20
20
15
20
20
20
10
20
20
10
10
50
50
50
50
50
50
50
20
50
50
50
50
50
20
50
50
50
50
50
50
50
50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
36
VCE(SAT}
Max. (V)
@IC
2.9
2.9
2.9
2.9
2.0
2.0
2.0
2.0
2.0
2.0
3.0
3.0
2.5
2.0
2.0
2.0
3.0
3.0
2.5
2.5
3.5
2.5
2.5
2.5
2.0
2.5
2.5
2.5
3.5
2.5
2.5
2.2
2.2
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.2
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
10
10
10
10
5
5
5
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
50
50
50
50
50
50
50
20
50
50
50
50
50
20
50
50
50
50
50
50
50
50
Is
1.0
1.0
1.0
1.0
0.5
0.5
0.5
2.0
2.0
2.0
1.0
1.0
2.0
2.0
2.0
2.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
1.0
1.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
1.0
4.0
4.0
4.0
4.0
4.0
1.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
PD
TC = 25°C
Max. (W)
150.0
150.0
150.0
150.0
125.0
125.0
125.0
125.0
125.0
125.0
175.0
175.0
62.5
125.0
125.0
125.0
175.0
175.0
125.0
62.5
175.0
62.5
125.0
62.5
125.0
125.0
125.0
62.5
175.0
125.0
62.5
250.0
250.0
125.0
180.0
125.0
180.0
180.0
180.0
125.0
250.0
125.0
125.0
180.0
125.0
125.0
250.0
125.0
125.0
180.0
167.0
167.0
156.0
167.0
167.0
Package
Outline
Page
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
066
TO-204
TO-204
TO-204
TO-204
TO-204
TO-204
066
TO-204
066
TO-204
066
TO-204
TO-204
TO-204
066
TO-204
TO-204
066
TO-204
TO-204
066
TO-204
066
TO-204
TO-204
TO-204
066
TO-204
066
066
TO-204
066
066
TO-204
066
066
TO-204
066
066
066
066
066
667
667
667
667
709
709
709
697
697
703
667
667
529
697
703
507
667
667
507
529
667
529
507
529
703
507
507
529
667
507
529
673
673
537
515
549
515
515
515
537
673
537
537
515
549
549
673
537
537
515
545
545
545
545
545
I
HiGH VOLTAGE
Power Darlington
Transisioll"s (Cant)
Ie
CONT.
(A)
50
60
60
100
100
100
100
100
100
CASE STYLE
0-67
Electrical Characteristics (@Ta = 25°C)
GE Device
D66DW3
GE10020
GE10021
D67DE5
D67FP5
D67DE6
D67FP6
D67DE7
D67FP7
Type
NPND
NPND
NPND
NPND
NPND
NPND
NPND
NPND
NPND
VCEO
Volts Min.- Max.
700
200
250
400
400
450
450
500
500
25
75
75
50
50
50
50
50
50
-
-
-
-
-
-
hFE
@IC
VCE(SAT)
@IC
@VCE Max. (V)
50
15
15
100
100
100
100
100
100
5
5
5
5
5
5
5
5
5
37
2.5
2.2
2.2
2.0
2.0
2.0
2.0
2.0
2.0
50
30
30
100
100
100
100
100
100
Is
4.0
1.2
1.2
8.0
8.0
8.0
8.0
8.0
8.0
CASE STYLE CASE STYLE
0-66
TO-204
PD
TC = 25°C Package
Max. (W) Outline
167.0
250.0
250.0
312.5
312.5
312.5
312.5
312.5
312.5
D66
TO-204
TO-204
D67
067
067
067
067
067
Page
545
673
673
553
559
553
559
553
559
POWER TRANSISTOR/
DARLINGTON ARRAYS
SINGLE INLINE PACKAGE
IC
CONT.
(A)
CASE STYLE
SIP 8 PIN
Electrical Characteristics (@Ta
GE Device Type
2
2
2
2
2
D74FI2D
D76FI2D
D76FY2D
D74FY2D
D76FY2T
NPND
NPND
NPN/PNPD
NPND
NPN
2
3
3
3
3
4
4
4
4
4
D75FY2D
D76FI3T
D78A3D1
D78A3D2
D76A3D
D76FI4D
D74FI4D
D7SFY4D
D74FY4D
D75FY4D
PNPD
NPN
NPND
NPND
NPND
NPND
NPND
NPN/PNPD
NPND
PNPD
4
5
5
D76FY4D
D76A5D
D74A5D
NPN/PNPD
NPND
NPND
hFE
VCEO
Volts Mln.- Max.
@Ie
60
60
80
80
80
2K
2K
2K
2K
500
80
60
100
100
100
2K
500
2K
2K
2K
60
80
80
80
2K
2K
2K
2K
2K
80
100
100
2K
1K
1K
60
8-PIN ARRAY CONFIGURATIONS
--
-
12K
12K
12K
15K
15K
-
-
=25°C)
VCE~AT)
@VCE Max. (V)
Ie,
Is
CASE STYLE
SIP 10 PIN
Po
TC =25°C Package
Max. (W) Outline
Array
Conflg. Page
Fig. 3
Fig. 6
Fig. 5
Fig. 1
Fig. 7
625
641
649
629
651
SIP 8PIN
SIP 10PIN
SIP 12PIN
SIP 12PIN
SIP 10PIN
Fig.
Fig.
Fig.
Fig.
Fig.
633
643
657
661
637
SIP 10PIN
SIP 8PIN
SIP 12PIN
SIP 8PIN
SIP SPIN
SIP 10PIN
SIP 10PIN
SIP 8PIN
Fig. 6
Fig. 3
Fig. 10
Fig. 1
Fig. 2
Fig. 5
Fig. 4
Fig. 1
1.0
1.0
1.0
1.0
0.4
2.0
2.0
1.0
2.0
1.0
1.5
1.5
1.5
1.5
0.5
1.0
1.0
1;0
1.0
0.3
0.001
0.001
0.001
0.001
0.001
3
4
4
3
4
SIP
SIP
SIP
SIP
SIP
1.0
0.4
1.5
1.5
1.5
2.0
1.0
2.0
2.0
2.0
1.5
1.0
1.5
1.5
1.5
1.0
2.0
1.5
1.5
1.5
0.001
0.050
0.003
0003
0.003
3
4
5
5
4
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
2.0
2.0
2.0
2.0
2.0
2.0
3.0
3.0
1.5
1.5
1.5
1.5
1.5
3.0
3.0
3.0
3.0
3.0
0.010
0.010
0.006
0.006
0.006
1.5
2.0
,2.0
3.0
3.0
3.0
0.006
0.012
0.012
4
3
5
3
3
4
4
3
10-PIN ARRAY CONFIGURATIONS
CASE STYLE
SIP 12 PIN
8PIN
10PIN
10PIN
8PIN
10PIN
FIG. 4
FIG. 2
FIG. 5
FIG. 3
FIG.6
FIG.7
38
645
627
665
631
635
655
639
623
12-PIN ARRAY CONFIGURATIONS
9
234
FIG. 1
2
7
8
9
4
FIG. 8
FIG. 9
FIG. 10
10
II
POWER TRANSISTORS/
DARLINGTONS SURFACE MOUNTED DEVICES
IC
CONT.
(A)
CASE STYLE
D-PAK
Electrical Characteristics (@ Ta = 25°C)
GE Oevlce
Type
0.05
0.05
0.8
0.8
1.5
D71G.05T1 PNP
D70G.OST1 NPN
D71Y.BT1
PNP
D70Y.BT1
NPN
D71Y1.5T1 PNP
1.5
1.5
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
D70Y1.5T1
D72Y1.5D1
D71F2T1
D70F2T1
D72K3D1
D73K3D1
D72FY4D1
D73FY4D1
D72F5T1
D73F5T1
NPN
NPND
PNP
NPN
NPND
PNPD
NPND
PNPD
NPN
PNP
hFE
VCEO
Volts Mln.- Max.
@Ie
VCE(SAT)
@1C
@VCE Max. (V)
Ie
Po
TC = 25°C Package
Max. (W) Outline
150
150
30
30
30
70
70
100
100
100
240
240
320
320
320
0.010
0.010
0.1
0.1
0.5
5
5
1
1
2
0.8
0.5
0.7
0.5
2.0
0.01
0.01
O.S
O.S
1.5
0.001
0.001
0.02
0.02
0.03
30
30
50
50
40
40
BO
80
50
50
100
4000
70
70
2000
2000
2000
2000
70
70
320
0.5
0.15
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
2
2
2
2
2
2
2
2
1
1
2.0
1.5
0.5
0.5
1.4
1.5
1.5
1.5
0.4
0.4
1.5
1.0
1.0
1.0
2.0
2.0
3.0
3.0
3.0
3.0
0.03
0.001
0.05
0.05
0.004
0.004
0.006
0.006
0.015
0.Q15 :
-
240
240
-
240
240
SOT-89
SOT-89
SOT-89
SOT-89
SOT-89
583
567
587
571
591
0.5
10.0
0.5
0.5
10.0
10.0
10.0
10.0
20.0
29·0
SOT-89
D-PAK
SOT-89
SOT-B9
D-PAK
D-PAK
D-PAK
D-PAK
D-PAK
D-PAK
575
607
579
563
603
619
599
615
595
611
CASE STYLE
TO-220lS
.Electrical Characteristics (@Ta = 25°C)
GEOevlce
7
7
7
7
6
6
D54FY7D
D55FY7D
D54A7D
D55A7D
D54H6D
D54D6D
Type
NPND
PNPD
NPND
PNPD
NPND
NPND
VCEO
Volts Mln.- Max.
80
80
100
100
250
400
2K
2K
2K
2K
2K
600
15K
15K
15K
15K
-
hFE
@IC
3
3
3
3
2
2
Page
0.5
0.5
0.5
0.5
0.5
POWER DARLINGTONS ISOLATED TO-220 PACKAGE
Ie
CONT.
(A)
CASE STYLE
SOT-89
VCE(SAT)
@IC
@VCE Max. (V)
Ie
1.5
1.5
1.5
1.5
2.0
2.0
0.006
0.006
0.006
0.006
0.040
0.040
3
3
3
3
2
2
39
3.0
3.0
3.0
3.0
4.0
4.0
Po
TC= 25°C Package
Max. (W) Oulllne
30
30
30
30
25
25
TO-220IS
. TO-220IS
TO-220IS
TO-220IS
TO-220IS
TO-220IS
Page
491
503
483
499
495
487
POWER TRANSISTORS/DARLINGTONS
TO-237 PACKAGE
CASE STYLE
TO-237
Electrical Characteristics (@ Ta = 25°C)
Ie
CONT.
(A)
GE Device
2
2
2
2
2
92GU01
2N6714
2N6726
92GU51
92GU01A
NPN
NPN
PNP
PNP
NPN
2
2
2
2
2
92GU51A
2N6715
2N6727
2N6724
92GU45
2
2
2
2
2
2
2
2
2
2
Type
VCEO
Volts Min.- Max.
30
30
30
30
. 40
60
60
60
60
60
PNP
NPN
PNP
NPND
NPND
40
40
40
40
40
60
60
60
25000
25000
92GU45A
2N6725
92GU05
2N6728
2N6716
NPND
NPND
NPN
PNP
NPN
50
50
25000
25000
20
50
50
92GU55
2N6717
92GU06
2N6729
92GU56
PNP
NPN
NPN
PNP
PNP
60
60
60
60
80
80
80
80
20
50
20
50
20
-
-
-
-
-
hFE
@Ie
VCE(SAT)
@lC
@VCE Max. (V)
Ie
PD
TC = 25°C
Max. (W)
Package
Outline
Page
0.100
0.100
0.100
0.100
0.100
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
0.100
0.100
0.100
0.100
0.100
1.2
1.2
1.2
1.2
1.2
TO-237
TO-237
TO-237
TO-237
TO-237
829
829
835
835
829
0.100
0.100
0.100
0.100
0.100
1.0
1.0
1.0
5.0
5.0
0.5
0.5
0.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
0.100
0.100
0.100
0.002
0.002
1.2
1.2
1.2
1.0
1.0
TO-237
TO-237
TO-237
TO-237
TO-237
835
829
835
833
833
0.100
0.100
0.500
0.250
0.250
5.0
5.0
1.0
1.0
1.0
1.5
1.5
0.35
0.5
0.5
0.002
1.0
0.002
1.0
0.25 0.025
0.25 0.010
0.25 0.010
1.0
1.0
1.2
1.2
1.2
TO-237
TO-237
TO-237
TO-237
TO-237
833
833
831
837
831
0.500
0.250
0.500
0.250
0.500
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.35
0.5
0.5
0.15
0.25
0.25
0.25
0.50
1.2
1.2
1.2
1.2
1.2
TO-237
TO-237
TO-237
TO-237
TO-237
837
831
831
837
837
40
0.050
0.010
0.025
0.010
0.050
GENERAL ELECTRIC
BIPOLAR POWER TRANSISTOR
PART NUMBERING KEY 1
(Applies to SOT-89, D-Pak, TO-220IS, & SIP-packaged devices)
D
00
XX
00
X
--
T
0
X
0
STANDARD TRANSISTOR = D: SPECIAL =X _ _ _ _ _
PACKAGE CODE (SEE TABLE 1) _ _ _ _ _ _ _ _ _ _....
EVEN = NPN; ODD = PNP
VOLTAGE CODE (SEE TABLE 2) - - - - - - - - - - - - CURRENT RATING
CONFIGURATION (T = TRANSISTOR; D = DARLINGTON)
OTHER DEVICE SPECIFICATION
---------..11
-==---"""""'==-----------.. . . .--....!I
OTHER DEVICE SPECIFICATION
OTHER DEVICE SPECIFICATION _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _.......0
Example:
0
7 2
T_J...a
STANDARD TRANSISTOR
_ _......._ _ _ _ _ _ _ _ _
D-PAK PACKAGE, NPN (SEE TABLE 1)
T
F Y
4
D
2
80-VOLT DEVICE (SEE TABLE 2)
4-AMP DEVICE
DARLINGTON
LEAD-FORMED VERSION, WIDE hFE
Table 1
Table 2
Package
Package Code
NPN
PNP
54
55
TO-2201S
70
71
SOT-89
72
73
D-PAK
74
75
SIP 8-PIN
76
77
SIP 10-PIN
78
79
SIP 12-PIN
VOLT.
VOLT.
CODe RATING
I
Q
J
U
Y
K
F
FI
FJ
FY
41
10
15
20
25
30
40
50
60
70
80
VOLT.
CODe
VOLT.
RATING
FK
A
G
B
BF
C
CF
D
DF
E
90
100
150
200
250
300
350
400
450
500
VOLT.
VOLT.
CODE RATING
EF
M
S
N
T
P
PA
PB
550
600
700
800
900
1000
1100
1200
GENERAL ELECTRIC
BIPOLAR POWER TRANSISTOR
PART NUMBERING KEY 2
(Applies to TO-202, TO-220AB, TO-218, TO-204, D66 & D67-packaged devices)
D
STANDARD TRANSISTOR
=D; SPECIAL =X
00
XXX
000
T
_ _ _ _ _ _ _ _ _.....
PACKAGE CODE (SEE TABLE 3) _ _ _ _ _ _ _ _ _ _ _ _ _~
EVEN =NPN; ODD = PNP
DEVICE TYPE
----------------------..01
TYPE NUMBER
-------------------------------~
Example 1:
D
STANDARD TRANSISTOR _ _ _ _ _ _ _ _ _ _ _ _ _ _ _T...I
T
4 4
T D
3
TO-220AB PACKAGE, NPN (SEE TABLE 3) - - - - - - - - - - - - ..
DEVICE TYPE
TYPE NUMBER - - - - - - - - - - - - - - - - - - - - - - - - -...
Example 2:
0
6 4
T__T_
STANDARD TRANSISTOR
___________
TO-204 PACKAGE, NPN (SEE TABLE 3)
-
J
V S
5
DEVICE TYPE
TYPE NUMBER - - - - - - - - - - - - - - - - - - - - - - - - - - - -...
Table 3
Package Code
NPN
PNP
41
40
42
43
Package
TO-202
44
45
TO-220AB
46
47
TO-218
64
65
TO-204 (TO-3)
66
D66 MODULE
67
D67 MODULE
42
CGlE~l2:lR1~lL [El[E(Cu~~~
5)[JJJ~~ffi\CClE=~tl(Q)[UJ~l' ~OW[E[FR 'f!R1ANS~STOR
[O)[EV~(C[E ~t\~~~~G ~[EV
(Applies to D-Pak-pacl
u
u
~
~
~
...z
'"a:a:
f\\..
VT1 ·100·C.......... I--'"
z
f\
~
./f
100
~.C
\\
'<><>"
o
~
\
...'"
'"
\
VeE' 5V
'"
\\'\
\\
\
VeE = IOV
10
I \\
1000
100
10
re. COLLECTOR
\\
\
II \
II \
\'
100
10
Ie .COLLECTOR CURRENT (AMPERES)
CURRENT (AMPERES)
(b) DC CURRENT GAIN (VCE= 10V)
(a) DC CURRENT GAIN (VCE= 5V)
FIGURE 2.8 GAIN VERSUS VCE
2.3.5 SATURA nON VOLTAGES
The saturation voltages must be specified as a function of base current, collector current and temperature.
Drive conditions determine the limits on minimum values. When the forced beta (f3F = Ic/IB) is high, saturation
voltages are high and vice versa. Gain hold-up is important if saturation voltages and consequential conductor
losses are kept low over the current range of interest.
Figure 2.9 shows typical values of VCE(SAT) as a function of Ic and IJr for junction temperatures of 25°C and
150°C for the General Electric D67DE Darlington transistor. Note that for TJ = 150°C and Ic = 100 amperes,
VCE(SAT) varies from 3 volts down to approximately 1.2 volts as f3F is varied from 100 to 10.
Iii
Iii
I...J
~
o
o
>
~ 10.0
~IO.O
'"
f-B F' re/ISI
z
o
;:
~
<>
~
;: o. I
u
1-- ....
1.0
o
~
.
F
~
UJ
':'
:
/ fJ.=25
7/ I
~fJFIO
~U>
::E
u
7 P=SO
F
~
a:
a:
'"t::
Iellsi
>
~
UJ
l-
P F100
10
100
200
U>
W
~
Ie. COLLECTOR CURRENT (AMPERES I
O. I
10
100
200
Ie. COLLECTOR CURRENT (AMPERES)
(bl VCE(SAT) VERSUS IC' TJ= 150°C
FIGURE 2.9. VCE(SAT) VERSUS i3F AND TEMPERATURE
The VBE(SAT) versus IC curves shown in Figure 2.10 provide information about the transconductance (i.e.,
gm =IciVBE with VCE constant) of the device. Transconductance is useful to equalize current sharing in parallel
operation of transistors. For single transistor applications these curves are useful in determining the required
clamping diode characteristic when using a Baker clamp for anti-saturation applications. In hard saturation
applications, VBE(SA T) maximum values enable optimization of the driver circuit.
80
1000
.,
~
'"
~
0;10.0
10
!:i
o
T:' 25° C
f1 Fa Iellel
~
!:i
g
z
o
fi
'":::>
!;(
.,
'"'"....
....
'"~
~f1FaIO
~,f1F'25
7: flflFF
!:i
o
TJ ·150·C
o
fl F'IelIel
>
z
fl F =5 n
'-flF a 100
~
§
1.0
.,!;(
L- I--~
~f
/P~
10
25
50
100
-I--:::: ~ J:::J::::
1.0
'"
....
....'"
i
:E
'",
'",
..'"
'"
'"~
en
III
5 o.
}.
~
I
10
100
:Ie. COLLECTOR
~
200
I
0'10
100
~
CURRENT(AMPE~ES)
200
Ie, COLLECTOR CURRENT (AMPERES)
la) VBE(SATI versus Ie. TJ = 25°C
Ib) VBE(SATI versus Ie. T J
=150·C
FIGURE 2.10. VBE(SAT) VERSUS IcAND TEMPERATURE
2.3.6 SWITCHING CHARACTERISTICS
The switching times (tON, ts and tf) of a device can be heavily influenced by the drive conditions .
• Turn-on time can be decreased by increasing base drive for a fixed value of collector current (low f3F);
• Both storage time and fall time can be reduced by providing negative base current during turn-off and use of
anti-saturation circuitry.
Consequently, it is important to define the drive conditions when specifying switching times. For the General
Electric D64VS power transistor, Figure 2.11 illustrates the effects on inductive switching times using negative base
drive (IB2). These times can be decreased even further by use of anti-saturation techniques.
2.0
UJ
:!!
l-
I
I
I
5 f-- Te ·25·C
1.7
1e "01'6
I-- CLAMPED INDUCTIVE
I. 5
LOAD,L' 200 l'h
..
,/
~~
t!>
Z
~
u
~
:;: 1.25
....
~
./
1.0
o
UJ
N
:::;
«
'z"
~
.75 e.--
-
.5 f - - t-
.25
--o
le· 2A .....,;:
le·4~::r
Ie 'BA
Ie '15A
4
.6
2. 5
UJ
'"
;:: 2.0 I-
~
t!>
Z
:;:
~
3'
'":::;
..
N
«
./
1.5
Z
--- f - - .
1.2
1.4
1.6
1.8
~
1.0
''"o"
10
Te ·25·C
Ie II 81'6
CLAMPED INDUCTIVE
LOAD, L' 200l'h
"'c
/
t--i--
.2
~~
lC' 15A
lc=BA
lC' 4A
le' 2A
2.0
le' 2A -
Ie'4A~
.5 I - - I- le' 8A
le' 15A
o
~~
l2~
I e'15A
I e '8A
I e '4A
I e ·2A
~
V
I
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
RATIO, I BI/IB2
la) STORAGE TIME VARIATION WITH
(b) FALL TIME VARIATION WITH IB2
182
FIGURE 2.11. EFFECT OF REVERSE DRIVE ON Is, If
2.3.7 FORWARD BIAS SAFE OPERATING AREA (FBSOA)
Depending on the transistor design, current in the collector region generally tends to concentrate under the emitter
periphery at turn-on. This reduces the total conducting area to a fraction of the total emitter area, as shown in Figure
2.12. When switching into a clamped inductive load (Figure 2.13), Ie must rise to the full value of IL before the
rectifier can turn-off, releasing the clamp. Consequently, the collector-emitter voltage equals Vee plus the forward
voltage of the diode during this time period.
Therefore, during the current rise time (tr ) the transistor sees simultaneously high voltage (VeE), high current, and
reduced active conducting area. Similar conditions can also exist under fault conditions of the circuit. Depending on
the rise time of the transistor or the duration of the fault condition, this can cause excessive localized heating that can
lead to thermal instability followed by thermal runaway and second breakdown.
81
n+
vlllllllm
c
FIGURE 2.12. CURRENT CONSTRICTION
FIGURE 2.13. CLAMPED INDUCTIVE LOAD
An important item of information for the power circuit designer is the locus of Ic - VCE, which marks the
boundary between stable and unstable operation, and defines the Forward Bias Safe Operating Area (FBSOA). A
typical FBSOA curve is shown in Figure 2.14. Note the limits of collector current and collector voltage.
IC
JL.s.
JL.S .
.........t - - f - - 50 JL. s.
5
~!-I---IO
..
IC (CONTI
VI
..........r-l--1OOJL.S.
~
.~
::J
1% DUTY
CYCLE
......,--+-- 1 M.S.
A
U
"¥-+---
5 M.S.
"¥-"'<:I----o.c.
VCEO (SUS)
O'----------'-------'------'-"'---------VCE
COLLECTOR VOLTAGE (VOLTS)
FIGURE 2.14. FBSOA
Collector current is permissible on it continuous basis in Regions A through C up to a maximum of Iqeont) in Region
A. Above the defined continuous current limits, the current may be applied on a pulsed basis up to the limit defined
by IC(max). Operation above IC(max) may result in melting or lifting of the bonding wires or internal damage to the
chip. Point (I) and the upper DC boundary of Region B represent the maximum dc power of the device at 25°C case
temperature in order to maintain the junction temperature at a temperature less than or equal to TJ(max). In Region
C, the second breakdown limit is defined by the onset of ISIB (Point 2). Currents greater than the maximum limits
defined for dc and pulsed duty (I %) may cause irreparable damage to the transistor as a result of localized heating.
Since energy (that is, a power-time product) destroys the power transistor, high peak powers above the average
power rating are permissible as long as the average power is less than that required to reach the maximum junction
temperature of the device. It must be emphasized that under pulsed operation the junction must be allowed to cool,
such that a temperature build-up does not occur within the device. Note that pulse ratings are specified with a 1%
duty cycle for convenience; however, again duty cycles greater than I % are permissible as long as the maximum
junction temperature of the device is not exceeded.
2.3.8 REVERSE BIAS SAFE OPERATING AREA (RBSOA)
In inductive switching, transistors are susceptible to second breakdown during turn-off. However, the mechanisms
that induce this type of breakdown are quite different from those of forward bias second breakdown. The values of
collector current and voltage at which second breakdown occur are found to vary with the values of the reverse base
drive. This is illustrated in Figure 2.15 for a lOA high voltage transistor. (The data was provided by the National
Bureau of Standards.)
82
The degree of this dependence varies with the type of emitter geometry and vertical structure of a transistor.
For high current inductive switching and with either no reverse bias or weak reverse base drive during turn-off, the
. second breakdown usually coincides with the breakdown sustaining voltage of the transistor. In an inductive circuit,
the energy that the transistor has to sustain following avalanche breakdown can be very large. It can cause the local
temperature to exceed the intrinsic temperature of silicon, resulting in thermal instability and second breakdown by
formation of meso plasmas.
Where a strong reverse base drive is present, second breakdown is initiated by a different mechanism. Reverse base
drive produces a strong localization of emitter current that can be an order of magnitude higher than that in the
forward biased case. It can create a high electric field at the N-N+ junction which triggers avalanche injection. This
lateral electrical instability leads to the formation of filamentary current and results in nucleation and, finally, meltthrough. In either the weak or the strong reverse base drive case, second breakdown is electric field-initiated and
thermally terminated. On the other hand, forward bias second breakdown is usually thermally initiated, as well as
thermally terminated.
It is interesting to note that when the reverse base current is increased to the point where it is equal to the collector
current, the emitter is effectively disconnected and the threshold for reverse bias second breakdown is substantially
increased. This is clearly shown in Figure 2.15. In this situation, a high "pinched in" current density cannot exist
(because IE = 0) and, therefore, there is no observable reverse bias second breakdown.
If an inductive load is used without a clamp and sufficient energy exists to avalanche the transistor during turn-off,
an Es/ B rating (U 2 / 2) is applicable. At turn-off, the collector-emitter voltage flies up due to inductive (di/ dt) kick
causing the transistor to avalanche. The maximum energy the transistor can sustain is determined by increasing the
inductor current prior to turn off until a subsequent device failure results. With increased reverse base drive, current
crowding decreases the transistor ES/B capability.
10
S
1\\
5
IZ
w
IBR=
0::
0::
::J
0
0::
0
I0
·O.lA
·0.2A
.lO.5A
,I.OA
·2.0A
w
..J
..J
0
~~ \~!
Ht--~
0
I~------~----~--~~~~~~
500
100
COLLECTOR- EMITTER VOLTAGE (V
FIGURE 2.15. THE VALUES OF COLLECTOR CURRENT AND VOLTAGE AT WHICH SECOND BREAKDOWN OCCURS FOR
DIFFERENT VALUES OF REVERSE BASE CURRENT. ONE DEVICE WAS USED FOR ALL THE MEASUREMENTS.
Most practical applications employ clamped loads. A typical clamped Reverse Bias Safe Operating Area (RBSOA)
curve is shown in Figure 2.16. The RBSOA curve represents the allowable worst-case turn-off load lines. RBSOA
applies whenever reverse base current flows during turn-off, even when the reverse base current is generated by a base
emitter resistor with no external reverse voltage source. RBSOA is essentially independent of temperature.
As indicated earlier, RBSOA performance varies considerably with reverse bias. Increasing levels of reverse bias
decrease turn-off switching times and hence turn-off switching losses but also increases turn-off current crowding.
These two phenomenom work against each other in relation to RBSOA performance. Hence, device design will
determine whether RBSOA performance improves or degrades with increasing reverse bias.
83
LI
IOOpoH
CLAM PEO RBSOA
25 ::Tc
:: 125°C
VSE '-5VOLTS,R s 'VARIABLE
VCLAMP
:r C (MAX)
!---------,....-T'\
-la=5A
I
I
-I'IOA_
I
S
I
VCC
~------------~I------~~~
I+-VCEO(S~
VCE
FIGURE 2.16. RBSOA TEST CIRCUIT
2.4 MOSFET TRANSISTORS
The MOSFET transistor is a three-terminal voltage controlled device. The drain-to-source current of the
MOSFET is controlled by a voltage applied between the gate and source.
The current gain of the device is extremely high (typically greater than 109), since the gate current consists only of
current required to charge the gate input capacitance and some small leakage through the gate oxide. Since current
gain is extremely high and the drain current is controlled by the voltage applied between gate and source, it is more
appropriate to specify transconductance (LlID/ Ll Vas) when using MOSFETs.
Figure 2.17 illustrates the common source voltage-current relationships of nand p-channel MOSFETs. In the
linear, or ohmic, region the slope represents the MOSFET on-resistance. In the transition region dynamic resistance
of the device is changing as channel pinch-off begins to occur. In the saturation, or active, region the MOSFET
characteristic is nearly flat due to pinch-off occurring in the channel. In this region the MOSFET makes an effective
constant current source.
l12"'°"
LINEAR
E ION
TRANSITION
I:
r
(DRAIN)
SATURATION REGION
I
in
D..
:.
a;
t-
J::
w
Il.
~
Z
0::
Ill:
S
(SOURCE)
I:
I:
al
N-channel MOSFET
r..l
(;
,
~
U.
U
Z
«
a;
0::
0
I:
I:
al
J::
I
Z
1
INCREASING
GATE
VOLTAGE
r..l
;: (;
.2 u.
+
....0
s
(SOURCE)
P-channel MOSFET
Vos ' DRAIN SOURCE VOLTAGE (VOLTS)
+ For N Channel
- For P Channel
FIGURE 2.17. MOSFET TRANSISTOR SYMBOLS AND OUTPUT CHARACTERISTICS
84
2.4.1 POWER MOSFET STRUCTURE
A double diffusion (OMOS) of P and N material into the top epitaxial layer of the substrate creates its channel
and source regions. See Figure 2.18. A thin oxide then covers them and polysilicon is deposited. This polysilicon
layer acts as the gate, providing the means for creating an electric field to invert the channel region. All the source
cells are then connected together with a single layer of metallization to form the source terminal, and the back of the
wafer is metallized to form the drain terminal.
An enhancement mode N channel MOSFET is turned on when the voltage applied to the gate creates an electric
field in the P-channel region. This field converts the channel from P-material to N-material, permitting current to
flow from the drain terminal vertically through the chip then horizontally through the channel into the source region.
SOURCE METAL
GATE OXIDE
PDLYSILICON GATE
FIGURE 2.18. POWER MOSFET STRUCTURE
1.2
en
en
1.1
Cl
>
Cl
w
!::!
....I
<>:
:2
0:
0
0.9
z
0.8
-40 -20
0
20
40
60
80 100 120140
TEMPERATURE-oC
FIGURE 2.19. BLOCKING CHARACTERISTIC
FIGURE 2.20. DRAIN-SOURCE BREAKDOWN VOLTAGE
VARIATION WITH TEMPERATURE
85
2.4.2 BLOCKING CHARACTERISTICS
BVoss is the maximum drain-to-source voltage at a specified junction temperature (usually TJ = 25°C) that can be
safely blocked without avalanching the device. This is illustrated in Figure 2.19. VoaR is the maximum allowable
drain-to-gate voltage that can be safely applied at a specified TJ and gate-to-source resistance (Rgs).
The temperature coefficient of Vos shows a strong temperature dependence, increasing as much as 16% between
+25°C and + 150°C, but decreasing as much as 8% between +25°C and -40°C. See Figure 2.20. The temperature
coefficient is approximately O.12%/oC.
BVoss is the maximum drain-to-source voltage at a specified drain current (10) with no gate-to-source signal
applied.
2.4.3 TRANSCONDUCTANCE (gfs)
Transconductance is defined as the ratio of the change of drain-to-source current brought about by a change in
gate voltage. That is:
Vos = constant
Transconductance is temperature dependent and the effect can best be seen in Figure 2.21. The temperature
coefficient of gfs is approximately 0.2%/°C.
9.0
1.5
is
ill
VGS = BV
1.4
N
:J
«
:;;
Vi
Q.
1.3
:.
~
a:
0
f-
6.0
a::
c:
::J
u
4.5
zw
~
w
u
PULSE TEST BO"sec 1% DUTY CYCLE
1.1
z
«
f-
z
u
<
a::
::J
Cl
Z
0
0
3.0
I
U
'"z
c:
«
c:
.!O
.E
f-
I
0;
0.5 L..-....1..---.JL--...L-~_.J-.--'----.J':--'-----L_~
-40 -20 0
20 40 60 80 100 120 140
0.5
FIGURE 2.21. TYPICAL TRANSCONDUCTANCE
1
1.5 2
2.5 3
3.5
4
4.5
5 5.5
VOS ' DRAIN SOURCE VOLTAGE (VOLTS)
TEMPERATURE -"C
VS.
TEMPERATURE
2.4.4 ON RESISTANCE (rOS(ON))
FIGURE 2.22. OUTPUT CHARACTERISTICS OF
MOSFET (AT LOWER VDS )
The static drain-source resistance ros is equal to Vos/Io at each point (ros is the small signal on resistance
1:1 Vos/ 1:110s at each point). This is illustrated in Figure 2.22.
The "on" resistance of a MOSFET consists of two components, the channel "on" resistance and the bulk resistance
of the device. The "on" resistance of low voltage devices «IOOv) consists primarily of the channel resistance, whereas
the "on" resistance of higher voltage devices is dominated by the resistance of the epi layer. That is,
rOS(ON) = Rch + Ro
Rch = channel resistance
Ro = extended drain resistance (epi layer)
In addition, channel resistance is controlled by the gate voltage and can be decreased by increasing Vas for a fixed
value of drain current. However, the maximum value of Vas must not be exceeded. Figure 2.23 shows typical
normalized "on"resistance. The temperature coefficient of rOS(ON) is positive and results in increased power losses at
higher junction temperature (see Figure 2.24).
86
The temperature coefficient of rDS(ON) ranges from +0.2% to +0.7%jOC depending on voltage (higher voltage
devices have higher temperature coefficients). The difference is caused by the competing effects of the positive
temperature coefficient of the silicon versus the negative temperature coefficient of the gate-to-source threhold
voltage VGS(th). Initially, the temperature coefficient of VGS(th) dominates, but as VDS is increased (with increased epi
thickness and resistivity), the temperature coefficient of the silicon becomes the dominating influence due to the epi
resistance and approaches +0.6 to +0.7%/ C.
w
40
U
Z
iii
~
~
0 20
~
iii
~
2.0
w
w
t!l
c(
f-
;:
'10
zw
o!::!
1.5
w...J
uc(
10
0
8
5
6
w
~
::J
4
o
1.0
rn
~
~
I
Z
~
c
...J
>
a::;
::Ja:
~~
f-
0.5
a:
VGS = 15V
10 = 5.5A
2
'ic
.2 1
en
~ .8
C
o
iii
a:
"
TJ - JUNCTION TEMPERATURE (OC)
TJ - JUNCTION TEMPERATURE (OC)
FIGURE 2.23 NORMALIZED TYPICAL ON-RESISTANCE
FIGURE 2.24. ON VOLTAGE vs TEMPERATURE
2.4.5 BREAKDOWN VOLTAGE VERSUS rDS(ON)
When the drain-to-source breakdown voltage of a MOSFET is increased, the "on" resistance for a fixed chip size
and process will increase exponentially by a factor of 2.3 to 2.7. If the breakdown voltage of a 100-volt device with an
rDS(ON) of one ohm is increased to 200 Volts, and the rDS(ON) of one ohm must remain constant, the area must be
increased five-fold. See Figure 2.25. That is, for a fixed chip size, the conduction losses increase as the breakdown
voltage is increased.
jj1t-1
T
D
r-
'OS(ONt 1ohm
VOS= 100V
--1
TO
2. 5
~
'OS(ONI=1ohm
vos=
200V
FIGURE 2.25. 100 VOLT CHIP SIZE vs 200 VOLT CHIP SIZE WITH CONSTANT ROS(ON)
2.4.6 INPUT AND OUTPUT CAPACITANCE
Capacitances of the MOSFET vary with voltage. The gate structure has capacitance to the source (C gs ) and to the
drain (Cdg)' The inherent reverse biased PN junction adds capacitance between the drain and source (Cds). This is
illustrated in Figure 2.26.
The data sheet specifies Ciss, Coss, and C rss . The relationship to C gs , Cds, and Cgd are defined below.
Ciss = Cgd II Cgs
Coss = Cds II Cgd
C rss = Cgd
87
2000
o
s
a. Device Capacitance
o
5
10
15
20
25
30
35
40
45
VDS-DRAIN-TO-SOURCE VOLTAGE (VOLTS)
b. Typical Data Sheet Values of Capacitance
FIGURE 2.26. TYPICAL CAPACITANCE VS. DRAIN-TO-SOURCE VOLTAGE
2.4.7 GATE CHARGE
The gate input capacitance is a nonlinear function of drain to source voltage. Therefore,switching time and drive
power calculations are based on the average input capacitance. Precise values are obtained from the gate charge as a
function of VGS. If the gate is driven from a current source and the current is integrated, the charge in the gate is
obtained (see Figure 2.27).
If gate capacitance is examined as a function of gate voltage, there are three areas with distinctly different
capacitances (see Figure 2.28). Between to and tJ, the device is practically off and the linearity of the slope indicates
constant capacitance. At time tJ, the drain-to-source voltage (Vos) begins to decrease until time t2. The slope of Vos
changes dramatically indicating a large increase in capacitance, a result of the Miller effect. At time t3, the device is
on. Between t2 and t3, the slope of VGS changes, due to the increase in Cgs as Vos decreases. The energy to turn the
device on is:
W = Y2 • VGS QG (Watt-Sec)
The power consumed is
P = QG. VGs. f
R
t
+
FIGURE 2.27. CIRCUIT FOR GATE CHARGE MEASUREMENTS
FIGURE 2.28. DYNAMIC GATE CHARACTERISTICS
88
2.4.8 SWITCHING CHARACTERISTICS
The MOSFET inherently has very fast switching speeds. Switching speed is primarily limited to the time it takes to
charge the gate input capacitance (Ciss). If it were possible to charge the gate instantaneously, the switching time
would consist only of the time it takes for the carriers to travel from source to drain (typically pico-seconds).
In addition to the pulse source impedance and input capacitance, other limiting factors at high switching speeds are
parasitic inductances in the wiring and connections to the package. Switching times for a MOSFET device change
very little as a function of temperature. A simple test circuit (Figure 2.29) can be used to evaluate switching times. It
consists of a pulse generator with known rise and fall times and known source impedance.
In most cases, switching speeds will be limited by the pulse generator source impedance, peak current capability,
and the parasitic inductances of the external package connections. Even the shortest connection will make an
undesirable contribution to switching time. The delay at turn-on is due to the time required for the gate voltage to
rise from zero volts to Vgs(th)' Once Vgs(th) is exceeded, the device will begin to conduct current. The delay at turn-off
is due to the over-drive of the gate to maintain minimum rDS(ON) (i.e., ON-voltage) while the device is conducting.
Vas must decrease significantly before rDS(ON) or VDS begins to rise. Switching waveforms of the input voltage and
the output voltage are shown in Figure 2.30. Note that these are idealized waveforms and actual waveforms may be
rounded or will have overshoot.
v
~
PULSE WIDTH
90%
TO SCOPE
TO SCOPE
D
Vg(t)
VOS(t)
0--~~~---------4~----------------~
ADJUST
FOR 10
VII
TO SCOPE
Zo
~
VOS (t)
If
--E--
iO(t)
LOW LSHUNT
.__________ J I
10%
FIGURE 2.29. SWITCHING TIME TEST CIRCUIT
FIGURE 2.30. SWITCHING WAVEFORMS OF INPUT
AND OUTPUT VOLTAGE
2.4.9 RATED CONTINUOUS CURRENT AND PEAK CURRENT
The rated drain current (ID) is the maximum de current a device can conduct without derating.
IDM -- the rated pulsed drain current -- is the maximum value of peak current the device can conduct at a
specified pulse width without derating. It is a function of pulse width, duty cycle, junction temperature, and
repetition rate. The maximum peak current may be limited by the diameter of the bonding wire, the mounting pad
area, or by the pellet surface metallization.
In a bipolar transistor, the rapidly decreasing hFE at high currents generally discourages operation in excess of
peak current ratings. In a MOSFET, the gain is not significantly reduced at high currents, but rDS(ON) may increase
if the gate-to-source voltage is not sufficiently high.
2.4.10 RUGGEDNESS
The ruggedness issue associated with Power MOSFETs is a result of the presence of a parasitic bipolar transistor
intrinsic in the structure of a vertical DMOS processed device. Figure 2.31 shows the equivalent circuit of this
parasitic element. This transistor has its base-emitter junction shorted by the source metallization, but "the
effectiveness of the short is dependent on design and process control. If carriers generated by high electric fields in the
drain region are allowed to cross the base region into the emitter region to cause bipolar transistor action, the
89
characteristic VCER breakdown shown in Figure 2.32 is observed. The locus of this breakdown is very much lower in
voltage than the V CBO (BVDSS) characteristic which would be observed if the transistor were completely suppressed.
Additionally, this locus shows a negative resistance characteristic as bipolar transistor gain increases with increasing
current. If the transistor is allowed to become active, the classic failure mechanism of the second breakdown can
occur, with current hogging taking place on both a macroscopic (amongst cells) and microscopic (within cells) level.
This causes local heating, thereby increasing bipolar gain, further constricting current and eventually leading to
failure.
The equivalent circuit of an NPN bipolar transistor in parallel with a MOSFET serves to explain the ruggedness
phenomenon from a circuit standpoint. The effectiveness of the base shorting resistor in preventing transistor action
determines the activity of the transistor when stressed by high voltages, or by high displacement currents through the
depletion region capacitance.
The transistor can be stressed in any or all of three ways. 1) High dv / dt impressed on the equivalent collector can
cause large displacement currents through the equivalent base shorting resistor which can cause the transistor to turn
on with predictable disastrous results if circuit conditions allow. 2) If the equivalent diode (transistor collector-base
junction) is caused to conduct in the forward direction, minority carriers left in the equivalent base region during
diode recovery can cause transistor action, again with destructive results if external circuit conditions allow. 3)
Finally, minority carriers crossing the base-emitter junction, generated as a result of avalanche conditions in the drain
region, can initiate transistor action, again resulting in failure of the device given sufficient external circuit energy.
Effective suppression of the parasitic bipolar transistor by design and strict process control is essential to
producing Power MOSFETs with the capability of operating under adverse stress conditions.
D
VCER
{J= 100
VGS= a
I
I
Q,
VCER
{J = 20
G
VDS
BVDSS
I.I
,I
II
~~====~~~~==~~/~I~vCE
VCBO
BIPOLAR TRANSISTOR
MOSFET TRANSISTOR
S
FIGURE 2.31. PARASITIC BIPOLAR CONTAINED
IN MOSFET STRUCTURE
FIGURE 2.32. MOSFET/TRANSISTOR BREAKDOWN
While the stress condition caused by avalanche breakdown is to be avoided on a repetitive basis, this stress can be
realized even in properly designed circuits when fault conditions arise. The Unclamped Inductive Switching (UIS)
test, performed using the circuit shown in Figures 2.33A and 2.33B, which stresses devices in the avalanche mode, has
been instituted as a process control in the GE Power MOSFET product line. The UIS test is an easily performed and
repeatable test, and devices shown to be rugged in avalanche breakdown also exhibit excellent characteristics in
dv / dt and diode recovery ruggedness. The converse, however, is not necessarily true - Power MOSFETs showing
good diode performance do not necessarily perform well in dv / dt capability or UIS.
VII
VGR(DS)
-+------------
E =10% VBR(DS)
E
WDSR = (
VBR(DS) \
VSR(DS)
-~)
(+
LIDS)
Tl
E
i= -
FIGURE 2.33A AVALANCHE ENERGY TEST CIRCUIT
I..
- - - -...·""I..-tAv---I
Ll
tAV= - VSR-E
FIGURE 2.33B AVALANCHE ENERGY TEST WAVEFORMS
90
2.4.11 THE PARASITIC DIODE
It has been shown in the previous discussion on ruggedness that the base-to-emitter junction of the parasitic NPN
transistor is practically a short circuit. Therefore, Figure 2.34 becomes the new equivalent circuit, that is, a MOSFET
in parallel with a diode.
If the drain-to-source is reverse biased, the diode will conduct. The forward current and reverse voltage ratings of
the diode are the same as the current and voltage ratings of the MOSFET. It may be used in inductive circuits as a
free-wheeling diode or as a clamp.
The internal diode is characterized for forward voltage drop and reverse recovery parameters like a discrete diode.
s
FIGURE 2.34. MOSFET WITH INTERNAL DIODE
2.4.12 FORWARD BIAS SAFE OPERATING AREA (FBSOA)
To achieve reliable operation for a power semiconductor, the FBSOA of the device must not be exceeded. Data
provided for this curve is at a case temperature of 25° C or at a specified junction temperature. This is shown in
Figure 2.35. The limits of the FBSOA curve are established by peak current, power dissipation at TJ(MAX) and
breakdown voltage.
2.4.13 SWITCHING SAFE OPERATING AREA
GE MOSFETs are rugged devices. The area that the load line can safely traverse is rectangular, limited by the
rated drain current (IDM), drain-to-source voltage (VDSS), and maximum permissible power dissipation within the
device.
The Switching Safe Operating Area, illustrated in Figure 2.36, is applicable to both turn-on and turn-off.
10M
,
10M
f-
~
~
::l
<.>
10
\,"
a:
,/
Q
_0
i'...
,
.........
.......
z
"
)<
~_
"
.........
I.........
i"'( [-.....1"-
OPERATION IN THIS AREA
MAY BE LIMITED BY ROS(ON)
["-....
.........
tIT
~
".........
"-~
, ."-
f-
"
"-
":!.
lOllS
ION'" IOFF:S lpsec
TJ,ul00°C
iila:
100,,5
a:
,L
::l
<.>
z
a:
"
Q
......... .........
SINGLE PULSE
Tc =25°C
cj
lOms
f!
lbo~,
i"'(
,
Oc
0
0
VDSS
Vas' DRAIN -SOURCE VOLTAGE
FIGURE 2.35. MAlCIMUM SAFE OPERATING AREA
VDSS
Vac, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2.36 MAXIMUM RATED CLAMPED SAFE OPERATING AREA
2.4.14 HANDLING CONSIDERATIONS
MOS integrated circuits are extremely sensitive to electrostatic discharge (ESD) or any other voltage transient
with sufficient energy content to break down the gate dielectric and do permanent damage.
Power MOSFET and IGT" transistor input capacitances are much higher than MOS IC's (many thousands of
cells in parallel), therefore more energy is required to charge the capacitance. This makes the device somewhat less
sensitive than integrated circuits. However, proper precautions must be taken in handling, packaging, and
installation of devices.
There is always the threat of a latent ESD failure! A latent failure can be defined as a time-dependent malfunction
that occurs under use conditions as a result of earlier exposure to electrostatic discharge that did not result in an
immediately detectable problem.
91
When devices arrive at their destination, it is recommended that they be left in the antistatic package until used.
They should be stored in conductive containers and only unpackaged on a static safe work station by persons
familiar with the ESD problem. Operator recommendations include use of: (1) static wrist straps, (2) static
controlled floor mats, (3) static controlled work surfaces, and (4) grounded soldering tips. All ground connections
should contain a 1 Megohm safety resistor-to-ground to protect personnel. Devices should not be picked up by their
terminals, and when inserted into electrical test equipment, voltages should only be applied after all terminals are
connected to the electrical circuit.
2.5 INSULATED GATE
~IPOLAR
TRANSISTORS
The IGT'" transistor is a three terminal device with the voltage controlled input of the MOSFET. The output
characteristic of the IGTM transistor is similar to that of the MOSFET, except that there is ,an approximate 1.0 volt
offset in collector emitter voltage before significant collector current flows. The effective on-resistance in the
saturation region is much lower for the IGTM transistor than the MOSFET. Understanding the IGTMtransistor
output characteristic is aided by the equivalent circuits shown in Figure 2.37.
When a gate-to-emitter voltage greater than the threshold voltage [VGE(th)] is applied to the device with the
collector positive with respect to the emitter, collector current flows. Current gain of the device (Ie! IG) is extremely
high and is typically greater than 109, since the gate current consists only of current required to charge the effective
input capacitance of the device and some small leakage through the gate oxide.
Since collector current is a function of gate-to-emitter voltage, it is more appropriate to specify transconductance
(Ale! AVGE) when using IGTMtransistors.
Figure 2.38 illustrates the common emitter voltage-current relationships of nand p-channel IGTM transistors.
Note that the definition of the linear and saturation regions is the same as the bipolar case.
N·IGT'· TRANSISTOR
P·IGT'" TRANSISTOR
J
J
FIGURE 2.37 IGr" TRANSISTOR EQUIVALENT CIRCUITS
2.5.1 IGTMTRANSISTOR STRUCTURE
The IGTM transistor is fabricated by starting with a heavily boron doped (P+) substrate and epitaxially growing a
high resistivity phosphorous doped (N-type) drift region. See Figure 2.39. The gate and emitter structure is then
formed in the epitaxial layer by using a high resolution, N-channel, DMOS process. Since the IGTM transistor
contains a parasitic pnpn thyristor structure, a P+ diffusion has been added to the basic power MOSFET structure in
the middle of each cell. This layer reduces the current gain of the upper NPN transistor and prevents latch up of the
parasitic thyristor. Without this feature, the IGT Mtransistor would latch up at high current levels causing loss of gate
control. In the GE IGTM transistor, the P+ region is introduced without additional processing in order to obtain high
yields and minimize wafer processing cost. The use of a separate P-base region allows independent control over the
gate turn-on threshold voltage. In these devices, the blocking voltage capability is controlled by the thickness and
resistivity of the N-drift region. This region has been optimized to simultaneously keep the forward drop as low as
possible.
92
(COLLECTOR)
i
INCREASING
GATE
VOLTAGE
(GATE'
(GATE)
o---~
G
G
(EMITTER)
VCE COLLECTOR-EMITTER VOLTAGE (VOLTS)
+ For N Channel
(COLLECTOR)
N-CHANNEL MOS IGr" TRANSISTOR
- For P Channel
(EMITTER)
P-CHANNEL MOS IGT '" TRANSISTOR
FIGURE 2_38 IGT'· TRANSISTOR SYMBOLS AND OUTPUT CHARACTERISTIC.
EMITTER METAL
POLYSILICON GATE
N - EPITAXIAL LAYER
FIGURE 2.39 IGT'· TRANSISTOR STRUCTURE
2.5.2 BLOCKING CHARACTERISTICS
The IGrM transistor has blocking characteristics similar to the Power MOSFET. That is VCER is the maximum
allowable voltage at a specified junction temperature (usually TJ = 25°C) that can be applied between the collector
and emitter terminals with a specified gate-to-emitter resistance (see Figure 2.40).
The temperature coefficient of VCER shows a strong temperature dependence, increasing as much as 15% between
25°C and + 150°C, but decreasing as much as 8% between 25°C and -40°C (see Figure 2.41). The temperature
coefficient is approximately O.12%/°C.
VCGR is the maximum allowable collector-to-gate voltage that can be safely applied at a specified TJ and gate-toemitter resistor (RGE).
VECR is the maximum emitter-to-collector voltage that can be applied in the reverse direction at the onset of
93
avalanche at a fixed collector current with the gate-to-emitter resistance specified at a minimum value. Increasing the
magnitude of VCE beyond this value will eventually lead to device destruction.
ACTIVE REGION
__- - - -
t
1.2
lNCREASING
GATE VOLTAGE
()
\\l
I_~
REVERS~
...E.QB.l!ffi£!.
CHARACTER ISTICS
CHARACTERISTICS
I
I
;;
0
t-
1.0
o
...
W
N
vF
:::i
'a:z""
0
;
0.8
Ic:: 1mA
VeER RATING
0.6
-100
-50
150
100
50
CASE TEMPERATURE"'C
FIGURE 2.40 COLLECTOR CHARACTERISTICS
FIGURE 2.41 NORMALIZED COLLECTOR-EMITTER BREAKDOWN
VOLTAGE VARIATION WITH TEMPERATURE
Although the IGT'M transistor inherently provides reverse blocking, special junction passivation techniques are
required to provide low leakage. Devices without this extra processing are not characterized for reverse blocking.
2.5.3 GATE-TO-EMITTER THRESHOLD VOLTAGE
If the gate-to-emitter voltage is increased from zero volts, the collector current does not increase significantly until
the gate-to-emitter threshold voltage (2-5V) has been exceeded. Gate-to-emitter threshold voltage is specified at
different current levels, depending on device current rating. Gate-to-emitter threshold voltage changes with
temperature. The temperature effect is shown in Figure 2.42 and VOS(th) has a coefficient of -6 mV JOC.
2.5.4 TRANS CONDUCT ANCE (gfs)
Transconductance is defined as the ratio of change of collector-to-emitter current brought about by a change in
gate voltage. That is:
_ AlcE
VCE = constant
gfs--AVOE
Transconductance is temperature dependent, and the effect can best be seen in Figure 2.43. The temperature
coefficient of gfs is approximately -0.3%jOC.
1.2
IC"'lmA
TYP. VALUE., 3.5V
"
oL-.L.--'-----'---'-~-L-L~~~~_~~
O.6'----'"------'-----'----'-----.L.-~
-100
-50
50
100
o
150
CASE TEMPERATURE"C
2
4
6
B
10
12 14
16
Ic(AMPERES)
18
20
22
24
26
FIGURE 2.43. NORMALIZED TRANSCONDUCTANCE
VS. COLLECTOR CURRENT.
FIGURE 2.42. NORMALIZED GATE-TO-EMITTER THRESHOLD
VOLTAGE VARIATION WITH TEMPERATURE
2.5.5 ON-STATE VOLTAGE [VCE(SAnJ
The on-state voltage characteristics of the IGT'M transistor are similar to a bipolar transistor. That is, VCE(SA n
decreases with increasing gate-to-emitter voltage and has a temperature coefficient that varies as a function of
collector current. This is shown in Figure 2.44 for a 10 amp device. It is observed that for collector currents from 0.5
Amps to 7 Amps the temperature coefficient of voltage [AVCE(SAnJ varies from -0.5 mV JOC to a zero temperature
coefficient at 7 Amps. For currents greater than 7 Amps, the temperature coefficient is positive. At 9 Amps, the
temperature coefficient is approximately +0.75 mVjOC.
94
2.5.6 GATE-TO-EMITTER DRIVE
The input characteristics of the IGT M transistor are similar to a Power MOSFET. That is, it has a gate-to-emitter
threshold voltage and a capacitive input impedance. In order to turn the device "on," the input capacitance must be
charged up to a value greater than VOE(th) before collector current can begin to flow. Typical VOE(th) is shown as a
function of temperature in Figure 2.45.
In order to turn the IGT M off, a resistor connected between gate and emitter is all that is required. This resistor
provides a path for the gate-to-emitter input capacitance to discharge. It must be emphasized that ROE has a lower
limit that cannot be reduced, and the value is indicated on individual device data sheets. The IGTM transistor has a
maximum controllable collector current that is dependent on the gate-to-emitter dv 1dt. That is, the higher the gateto-emitter turn-off dv 1dt, the lower the controllable collector current.
2.5.7 SWITCHING PROPERTIES
The IGTM transistor is designed such that the turn-on and turn-off times of the device can be controlled by the
gate-to-emitter source impedance. Its equivalent input capacitance is lower than a Power MOSFET with a
comparable current and voltage rating. The device is turned on by applying a positive voltage between the gate and
emitter terminals. When VOE is greater than VOE(th), collector current flows. In switching applications where
VOE > > VOE(th), the device saturates.
The IGTM transistor is similar to a Power MOSFET during turn-on and similar to Power Bipolars during turn-off.
However, during turn-off, it exhibits a fall time that consists of two distinct time intervals - designated hereafter as
tn and tf2. Typical switching waveforms for a resistive load are shown in Figure 2.46 using two types of IGTM
transistors. The two time intervals are very distinct for the slow device. The turn-off delay is caused by the discharge
time constant of the effective gate-to-emitter capacitance and ROE.
The IGTM transistor has a positive temperature coefficient associated with its fall time. It is approximately
0.27%/° C. The rise time of the IGTM transistor is relatively constant over temperature and is similar to a Power
MOSFET.
25,-----,------,-----,------,-----,
~
1.2
~
20 1-------t------+----"--rt-----r---tr--------1
""-"
~
15t------+------~_+--~~L-_+--------1
~
10
~
a
~
8
r------t--------v'---hL--f------+---------j
IC"lmA
TYP. VALUE"'3.5V
5 1-------t---7"-7I'q-----VGE"'·15V ------1----1
MAXIMUM PULSE WIDTH "'300 j.lsec
MAXIMUM DUTY CYCLE =2%
0.6 ' - - - - " - - - -........_ _--'-_ _---'_ _ _' - - _
-100
-50
CASe TEMPERATURE
~',
!
·;n'F"
,."
~
ilV
~l
I
t,
11
l1
I
I
11
g
I '.
til i~U
I
ISO
~C
FIGURE 2.45. NORMALIZED VGE(th) VS. TEMPERATURE
FIGURE 2.44. TYPICAL V CE(SAT) VS. ICE AND T J
FOR A 10 AMP DEVICE
o';\~'.'
100
50
COLLECTOR· EMITTER SATURATION VOLTAGE, VeE (SA TI',VOLTS
II
I
II
I
OilS I
TOP (leI VERT= 2A/cm BOTTOM (V GEl VERT= 5V/cm
FIGURE 2.46. RESISTIVE LOAD SWITCHING
95
II
II
I
~
1~ ~
1I
I
2.5.8 EQUIVALENT FALL TIME
The two distinct fall time intervals make it difficult to estimate power loss given the traditional 10-90% fall time.
The equivalent fall time, tf(eq), is the calculated linear fall time that yields the same area under the current curve as
the actual turn-off curve, see Figure 2.47. For inductive switching, turn-off losses can be estimated using
~ VCEIc f tf(eq»'
IF(eq)
i(l)dl
IF=
~
1
S~
i(l)dl
10
FIGURE 2.47. EQUIVALENT FALL TIME
2.5.9 CONTROLLING CURRENT FALL TIME
The current fall time of the IGT'M transistor can be controlled by use of external circuitry. tf) is directly controlled
by the value of RGE (Figure 2.48). This dependence is shown in Figures 2.49 and 2.50. tf2 is not controllable and is an
inherent characteristic of the type of IGT'M transistor that is selected. The control feature of tf) by a resistor (RGE)
can be an advantage. For example, in case of an inductive load, the fall time can be slowed to the extent that
snubberless operation is possible. Figures 2.49 and 2.50 are idealized representations of the two phases of the device
turn-off. That is, a slow device can be used for dc and low frequency applications with minimal gate turn-off current
or a fast device can be used with a nearly linear turn-off characteristic. [Figure 2.50]. For higher frequency operation,
a fast device with RGE I p.u. will minimize switching losses due to tn and tf2 per Figure 2.50.
=
'c
'CM-I---.........
III
VARIABLE
tf2~CONSTANT
1f2
CONSTANT
loon
470n
lK
80
10K
t(~s)
I\;E (UI
FIGURE 2.48. SWITCHING TIME VS. RGE
FIGURE 2.49. FALL TIME CONTROL FOR A SLOW DEVICE
96
,,~~- - - - - - - - - - - RGE=N
,
p.u.
I
I
I
'"
I
I
VARIABLE
I
'12
CQNSTMH
10 t(,..s)
FIGURE 2.50. FALL TIME CONTROL FOR A FAST DEVICE
2.5.10 FORWARD BIAS SAFE OPERATING AREA (FBSOA)
A typical Forward Biased Safe Operating Area curve is shown in Figure 2.51. The IGT'M transistor can conduct
peak currents beyond the controllable current limit of the device. The device is derated linearly due to thermal
limitations and has a peak pulse current rating limited by power dissipation and wire bond capability. There is no
second breakdown current derating for the IGT'M transistor.
2.5.11 TURN-OFF SAFE OPERATING AREA
The IGT'M transistor does not require a negative turn-off bias for high speed switching. The current fall time is
determined by the value of RGE. Therefore, the devices have been characterized as a function of RGE for a resistive,
as well as an inductive load. A typical clamped SOA for an inductive load is shown in Figure 2.52. The area that the
turn-off load line can safely traverse is rectangular-limited by the collector current, collector-emitter voltage (VCE),
and maximum permissible power dissipation within the device.
40
100
50
13a:
~
en
UJ
~
~
!i
UJ
"
20
r-.....
'I'
"i'..
10
'i'..
~ 30
~
::i
E
!i
5
."
a:
a:
i:l
a:
10psec
" f"'....
i'..
o
§ 05
"
SINGLE PULSE
IC;2r1
0.1
1
III
10
20
50
'forr
100
200
,-,
UJ
INDUCTIVE OR RESISTIVE LOAD
a:
a: 20
..I"
i:l
TJ - 150'C
RGE ~ 100 OHMS
a:
~
u
I'r......
1.0
:l
0.2
"
'" ""- LU
i'..~,
~
&1
UJ
~
o
U
."
lOmsec
10
Ul
lQOmsec
" rLll
500
o
°
VCE. COLLECTOR·EMITTER VOLTAGE. (VOLTS)
FIGURE 2.51. FORWARD BIAS SAFE OPERATING
AREA AND TURN-ON
100
200
300
400
500
PEAK COLLECTOR·EMITTER VOLTAGE, VCE, VOLTS
FIGURE 2.52. TURN-OFF SAFE OPERATING AREA
2.5.12 HANDLING CONSIDERATIONS
MOS integrated circuits are extremely sensitive to electrostatic discharge (ESD) or any other voltage transient
with sufficient energy content to break down the gate dielectric and do permanent damage.
Power MOSFET and IGT'M transistor input capacitances are much higher than MOS IC's (many thousands of
cells in parallel), therefore more energy is required to charge the capacitance. This makes the device somewhat less
sensitive than integrated circuits. However, proper precautions must be taken in handling, packaging, and installation
of devices.
97
There is always the threat of a latent ESD failure! A latent failure can be defined as a time-dependent malfunction
that occurs under use conditions as a result of earlier exposure to electrostatic discharge that did not result in an
immediately detectable problem.
When devices arrive at their destination, it is recommended that they be left in the antistatic package until used ..
They should be stored in conductive containers and only unpackaged on a static safe work station by persons
familiar with the ESD problem. Operator recommendations include use of: (1) static wrist straps, (2) static controlled
floor mats, (3) static controlled work surfaces, and (4) grounded soldering tips. All ground connections should
contain a I Megohm safety resistor-to-ground to protect personnel. Devices should not be picked up by their
terminals, and when inserted into electrical test equipment, voltages should only be applied after all terminals are
connected to the electrical circuit.
98
The increased need for electronic component quality and reliability has zoomed dramatically in recent years. One
of the primary reasons for this sudden change has been the rapid growth of complex industrial and consumer
electronic systems that require the use of large numbers of devices per system. This requires the defective levels of
incoming components be extremely low in order to successfully manufacture these systems at minimum costs. This
has resulted in the recent trend to measure component defective levels in Parts Per Million (PPM) instead of the
previous parts per hundred or percent. This quality measurement is 10,000 times more sensitive than the previous
measurement.
In addition, these systems are required to perform satisfactorily over long periods of time such as for 10 to 20
years. This means that accelerated reliability assessment techniques must be used to develop models for predicting
long life performance of these components. The accelerated component assessment must be made long before the
devices can be evaluated under application conditions. This is needed since testing at use conditions would require
stressing a large number of devices for years in order to prove that devices were reliable. In the meantime, the devices
and the systems would be obsolete. Accelerated testing techniques are also needed to give a rapid evaluation of
component product designs and design improvements to minimize costs.
A new method of predicting the reliability or product life of semiconductors under field conditions is described.
This includes the use of accelerated test results to obtain the quantitative multipliers for derating semiconductor
junction temperature, voltage and measurement conditions. The failure rate based on these multipliers is used with
the negative exponential distribution to predict the probability of survival (Ps) or reliability. The expression one
minus P s gives the probability of failure. The result of this method was confirmed with the accelerated testing of over
5,000 diodes and three years of field operation of over 770,000 diodes!.
The purpose of this chapter is to discuss some of the latest techniques used in the manufacture and assessment of
semiconductors to meet the new quality and reliability requirements. Results from the accelerated testing of our
signal and power bipolar transistors, Power-MaS transistors and our Insulated Gate Transistors (IGTs) will be
discussed.
3.1
OU~IUTY
Product quality can be defined as a result of the successful development, design, manufacture and shipment of a
product that meets customer expectations. It is recognized that this cycle from concept to customer acceptance can
only be accomplished with quality conscious personnel who are trained, motivated and dedicated to excellence. To
aid in achieving this product quality, a world class Computer Aided Manufacturing (CAM) facility was developed
and is operating in Syracuse, New York. This incorporates the latest in cleanroom technology, automated process
equipment and state-of-the-art integrated circuit processing environments to give consistent quality and reliability in
our products.
This Computer Aided Manufacturing (CAM) is supported by the latest Computer Aided Design (CAD) techniques
which includes device and package simulation. This system has taken years off the product development cycle which
enables us to tighten design specifications and produce higher quality products.
Computer Aided Design (CAD) and Computer Aided Manufacturing (CAM) are enhanced with a wide range of
quality and reliability assurance activities. The latest quality assurance techniques are being implemented on a
99
worldwide basis. For example, manufacturing personnel are being trained in the use of statistical process control.
Control charts are being used at critical manufacturing steps.
These control charts are used to graphically display the results of process measurements and identify variations
that are due to assignable causes. Corrective actions are taken to remove the assignable causes. The results from these
charts show when the assignable cause variations are removed and the measurement data variations return to random
or chance variation. This assures that the product is made under a uniform manufacturing process which is necessary
to meet the low outgoing defective levels in Parts Per Million (PPM).
The outgoing inspection gate is used to assure that only lots of devices that pass the inspection criteria are shipped
to customers. A random sample from each lot is submitted to inspection. The inspection criteria includes a section
for electrical parameters and another section on visual/mechanical parameters. If the sample passes inspection, the
lot is accepted for shipment. If the sample fails, the lot is returned for 100% screening to remove the defectives. A
defective is defined as any device that does not conform to a specification in some respect. The rescreened lot is again
submitted to outgoing inspection. The defective level in the accepted lots is summarized monthly and included in the
GE Quarterly Quality Report.
A worldwide quality organization is set up to meet the requirements of MIL Q 9858A for the signal and power
products on the MIL-S-19500 Qualified Products List (QPL). The quality system and product lines on the QPL are
audited periodically by the Defense Electronics Supply Center, Dayton, Ohio to assure compliance to MIL-S-19500.
In addition, regular contributions are being made to IEC Technical Committee TC47-Semiconductors, for the new
International Electrotechnical Commission Quality System (IECQ) on Semiconductors.
The quality System used to manufacture these devices includes documented procedures that are described under
the concept of "Total Quality Control".
3.2 RELIABILITY
In order to demonstrate the reliable performance of transistors, a number reliability evaluation stress programs
have been conducted. These programs were designed to evaluate and demonstrate device properites such as chip
surface stability, sealed junction integrity, thermally matched package materials, and long life stability. The devices
used in the testing programs were random samples from several production lots taken from different product lines,
and they received no special preconditioning or stress screening. They were submitted to accelerated levels of
environmental, thermal, and power stresses which usually exceeded the normal MIL-STD levels. The results of these
statistically significant programs have established the capability of the General Electric transistors to operate under
the extreme range of environmental conditions required in demanding consumer and industrial applications 2•
This chapter summarizes the results of accelerated testing of transistors, and includes a discussion of reliability
prediction. Calculations of expected reliability under normal application conditions are shown. An Arrhenius model
of response to stress shows the gain in reliability that can be expected by derating to operating levels below device
ratings. This chapter also discusses the probability of survival and failure of a device or system when using a given
MTBF and the negative exponential failure distribution.
Evaluating the reliability of discrete semiconductor devices was accelerated a number of years ago with the
Minuteman and other government-sponsored reliability improvement programs. This discussion will focus on some
important accelerated testing techniques and analytical methods that have been developed and show how they are
used to obtain reliability prediction models. These techniques can also be used to determine effective stress screens to
remove the early failures, especially for critical and costly applications. These early failures are normally due to
random manufacturing defects that usually occur in a small fraction of the device population. These early failures
usually cannot be detected with only conventional electrical measurements.
100
3.2.1 GENERAL APPROACH TO ACCELERATED TESTING
The accelerated tests have been evaluated on a number of reliability improvement programs. The chief advantage
of these tests is that they allow one to estimate, in a short period of time, the probability of successful operation of
electronic components in long-life systems. The test results are used I) to evaluate early designs of new products and
process changes, 2) to maintain process controls during the manufacture of the devices, and 3) to predict reliability,
failure rate, and mean time-to-failure over the useful life of devices in applications.
The usual failure pattern that can be anticipated for electronic components is shown in Figure 3.1. This pattern
includes the early failure period followed by the useful life (constant failure rate) period, and finally the wear-out
period which has not been established for well designed semiconductors. Failures that occur during the early failure
period are usually due to random manufacturing defects. A constant failure rate estimate after the early failure period
is quite conservative, since well designed semiconductors under test and in most applications have a slightly
decreasing failure rate.
The two types of accelerated tests to be discussed are the step-stress and the constant stress-in-time tests shown in
Figure 3.2. The step-stress test is usually used to explore the device capability in the stress domain. A sample size of
about 20 is sufficient for this evaluation. The devices are subjected to a stress for 72 to 100 hours, measured, and then
subjected to a higher stress level for the same time increment, and then measured. This sequence is continued until
about half of the total sample has failed. The stress level reached can be defined as the threshold of stress at which
devices fail in a short period of time, such as less than 100 hours. Stress levels below this threshold can be used for
the constant stress-in-time tests. The failures generated on these tests are usually valid candidates for failure analysis
and failure mechanism studies. The effectiveness of this type of testing can be greatly improved by using control
devices which are not stressed, but are measured at each readout point. These readouts provide data for the effective
assessment of device response to stress and afford an estimate of the precision of measurements. Furthermore, the
control devices are excellent candidates for analysis so that comparisons can be made with failed devices to determine
valid failure mechanisms. The step-stress is an excellent method for maintaining process control during the device
manufacture and for a quick comparison of new process changes to determine any adverse side effects. The stepstress results are not generally used in determining failure-in-time patterns because of the cumulative effect of the
several levels of stress on the device performance. However, failure-in-time patterns can be obtained from the
constant stress-in-time tests.
FAILURE RATE CURVE
w
le(
II:
w
II:
::l
....
...«
CONSTANT FAILURE
RATE CURVE
-EARLV--f-ol.o----OPERATING L l F E - - - ,I-WEAROUTFAILURE
PERIOD
PERIOD
FIGURE 3.1. ELECTRONIC COMPONENT FAILURE PATTERN
101
STEP STRESS
~~:t:=:;? "
100
200
II:
S2
t;
S,
300
.5 10 50
TIME·HOURS
CUMULATIVE % FAILURE
CONSTANT STRESS-IN-TIME
....
IU
S3
....
S2
>
IU
....
>
w
....
III
III
IU
II:
l-
/
S3
IU
I
S2
!l!
W
S,
S,
II:
t;
III
,
24 168
, 2
1000
500
TlME·HOURS
10
FAILURE RATE %/KHr
FIGURE 3.2. ACCELERATED TESTING
The objective of the constant stress-in-time tests is to determine the relationship of time, generally at three levels of
stress, on the device performance. Sample sizes of from 20 to 100 or more devices are usually used on these tests.
Each group of samples is subjected to each of the three levels of stress for a duration of at least 1000 hours. Failure
rates of about 0.5% to 10% per 1000 hours are usually obtained during this test. The test results from the three stress
levels SI, S2 and S3 can be used to verify the reliability prediction model for the type of devices under test.
The predominant failure mechanisms found in semiconductor devices are related to temperature and often fit the
Arrhenius Model of respon~e. The model is generally described by the equation:
A. = eA -B/T
=A'eE/(kTJ
A failure rate.
T absolute temperature (OKelvin).
A,B empirically derived constants from life test data.
A' exp(A).
k Boltzman's constant, 8.62 x 1O-5eV IK.
E activation energy, empirically derived from: E~ -kB. The slope B is negative.
The activation energy (E) can be obtained from the empirically derived Arrrhenius Model equation. For example,
from Figure 3.7.
E=-k B
E
=-(8.62 x 10-5) (-7289) =0.63eV
The slope (B) can also be obtained graphically from two coordinate points (At. TI), (A2, T2).
B =In Al - In A2
I
I
TI
T2
Since measurement readouts are usually made at 0, 24, 168,500 and 1000 hours during the constant stress-in-time
tests, a failure-in-time analysis can be made on a Weibull graph at shown in Figure 3.3. This graph shows whether an
increasing, a constant, or a decreasing failure rate is obtained. As seen in the graph of Figure 3.3, a f3 of less than one
was obtained, demonstrating that these devices had a decreasing failure rate.
102
WEIBULL CUMULATIVE PERCENT FAILURE·IN·TIME CURVE
TRANSISTOR 2N3605·7
99
w 90
a:
3
60
:t
II.
30
PT = 550mW
VCE = 7~V
T A = 25°C
(1.6 X ABSOLUTE MAX. RATING)
I-
Z
w
U
10
~
5
3
a:
w
>
WEIBULL PARAMETER ESTIMATES
..
SHAPE FACTOR (~) = 0.3
(OECREASING FAILURE RATE)
~
c(
~
:>
SCALE FACTOR (ciJ = 48.5 HRS.
.5
LOCATION FACTOR (~) = 7 HRS.
u
.1~---r~-r~Trrt---'--r-r~~+---~-r'-rrrrn
10
100
1000
10,000
FAILURE - AGE (IN HOURS)
FIGURE 3.3. WEIBULL CUMULATIVE PERCENT FAILURE-IN-TIME
In general the Weibull reliability function has been used effectively in evaluating the reliability of semiconductors3•
This function can be expressed as:
Ps =e -(t-")I).8
a
where
Ps is the probability of survival or reliability:
is the location parameter.
a is the scale parameter,
{3 is the shape parameter which is a measure of the rate of failure.
t is the operating time.
")I
The above parameters are usually determined graphically when specific test results are plotted on a special Weibull
graph. The most interesting parameter is beta ({3), When beta is greater than one the failure rate increases with time
and if it is less than one the failure rate decreases with time. When beta is equal to one the failure rate is constant and
the function reduces to the negative exponential case. Also in this case ")I is zero since failures can start at time zero.
This can be expressed as:
-t
-t
MTBF
a
Ps =e
=
e
Where a is a constant equal to the Mean Time Between Failure (MTBF).
If beta is greater than one this indicates the occurrence of an increasing failure rate, This is usually not desirable
from a reliability standpoint; for example, in the operation of an equipment. Also, it indicates that a test or stress is
destructive which identifies the need to lower the stress test level or to redesign the component tested.
It is also to be noted that when beta is less than one for a given stress the stress can be used as an effective screen
to remove early failures. Once the early failures are removed it is desirable to move into the constant failure rate
region where only infrequent random type of failures occur. This was demonstrated on several life tests on the signal
diode 4• Also a constant failure rate normally occurs under derated operating conditions in practical applications. This
assures that the negative exponential reliability function can be used with confidence in predicting the device
reliability.
103
3.2.2 RELIABILITY PREDICTION FROM ACCELERATED TESTS TO APPLICATION
The General Electric semiconductor signal diode with a Meta-Bond® construction was chosen as a model for this
analysis. This device was selected since it had been evaluated under extensive testing conditions as well as under three
years of monitored operation in the field l . Acceleration multipliers that quantitatively give the stress relations
between different levels of junction temperature, voltage and measurement under accelerated test and application
conditions are used. These multipliers enable the prediction of reliability at the application conditions.
• Application Conditions:
Type of Device: Similar to IN4148
No. of Devices in the System: 770,679
Reverse Voltage: 30 Volts
Peak Current: IF = 0.5 Ampere; 50% Duty Cycle
Ambient Temperature: 55°C
Junction Temperature: Average 70°C
Peak
80°C
Environment: Ground Fixed
Reliability Objective: Zero Functional Failures Per Year
• Accelerated Life Test Results:
Conditions: TA =25°C, f =60 Hz
10 =225mA, VR =70VPK
t = 1,000 Hours
Failure Criteria: IR @ 40V = 500nA (Max)
.6. VF> + 15MV @ IF 65mA
LTPD =3%
Failures/Samples Tested: 1/5,381
Best Estimate Failure Rate: 0.03%/K Hrs. '
• Acceleration Multipliers
To determine acceleration multipliers between tlte accelerated test and application conditions, reference is made
to the above operating life test data. 2
Voltage Multiplier (Mv):
From Figure 7 of GE Publication "Reliability Evaluation and "Prediction for Discrete Semiconductors", IEEE
Transactions on Reliability
tl at VR of 30V and TJ of 65°C =5000 Hours
t2 at VR of 70V and TJ of 65°C = 1220 Hours
5000
Mv = 1220 = 4.098
Measurement Multiplier (MM):
From Figure 8 of GE rublication "Reliability Evaluation and Prediction for Discrete Semiconductors", IEEE
Transactions on Reliability
IR at VR of 40V =70nA
IR at VR of 30V = 45nA
MM = 70 =1.56
45
104
Temperature Multiplier (MTJ:
From the above life test data there was one specification limit failure; however, there were zero non-functional
failures in 5,381,000 device operating hours. This give a best estimate failure rate of O.013%/KHRS at TJ =170D C.
Using this as a starting point and the same slope of the graph in Figure 4 of GE Publication2 the following is
obtained for non-functional failures:
15.197 _ 8656
A =e
TJ+273
:. AI =O.OI3%/KHRS at TJ =170D C
A2 =0.000043657%/KHRS at TJ =70D C
MT =~ =297.777
A2
The total multiplier (M) is
M= MyxMMXMT
M =(4.098)(1.56)(297.777) = 1903.82
Failure Rate at Application Conditions:
A3 = 0.013 = 0.000006828%/KHRS
1903.82
MTFB =__ = 1.464477 x 1010 hours
A3
• Reliability = Probability of Survival (Ps) for the negative exponential reliability function.
Ps
=e-t/MTBF
where t =operating time in hours.
MTBF = Mean Time Between Failure
The Probability of Failure (PF):
PF = 1- Ps
Results from the above equations:
Period in Year
1.5
15.0
Ps
99.9999103%
99.999103%
PF
0.0000897%
0.000897%
The expected failures = (0.897 x 10-6)(770,679) = 0.69 Failures
e Results: This method predicted that there would be 0.69 failures out of 770,679 devices or 0.0000897%
failures in an average operating time of 1.5 years. The actual field results showed that there were no failures out
of 770,679 devices operating in the field during this period. This demonstrates that the method is quite accurate
in predicting the failure rate under application conditions.
105
• Conclusions:
1. The use of the negative exponential distribution for the probability of survival and one minus this for the
probability of failure was very accurate in predicting less than one failure out of 770,000 diodes during a 3-year
operating period in the field. No failures actually occurred.
2. Quantitative acceleration mUltiplying factors for voltage, junction temperature and measurement levels can
be used to realistically predict low percent failures in years of operation in applications.
3. The determination and use of these mUltipliers enables realistic and timely reliability predictions on new
products with a minimum accelerated testing time and cost.
4. The Weibull reliability model provides an excellent method of evaluating the effectiveness of a burn-in
screen for removing early failures.
5. The use of these analysis techniques will accelerate the successful application of complex electronic systems
that use large numbers of semiconductor devices.
The general approach using accelerated testing results to predict the reliability of semiconductors was
described in the previous Sections 3.2.1 and 3.2.2. The validity of this prediction technique was demonstrated
on an extensive reliability evaluation program on signal diodes. This type of device was chosen since accelerated
test results were available as well as three years of field operation data. As seen in the previous section, the
prediction technique was very accurate. Therefore, these accelerated testing and analysis techniques were
extended to bipolar power transistors and the reliability prediction model is shown in Figure 3.7. These
accelerated testing techniques have also been extended to Power-MOSFETs and Power-MOS Insulated Gate
Transistors. The results of these tests are shown in the subsequent sections ..
3.2.3. PLASTIC ENCAPSULATED POWER TRANSISTORS
GE is a leader in the development and production of power semiconductors. This leadership was first established
in metal package type devices and in recent years has extended into the field of plastic encapsulated power devices.
The growth of the plastic power transistors is following a similar reliability improvement pattern as that of the signal
transistors. Presented are the reliability test results based on thousands of unit hours and cycles of power transistor
test data, which demonstrate the structural, thermal and chemical stability of these devices. This information
demonstrates the capability of these transistors to operate successfully under the wide range of environmental,
electrical and thermal stress levels required in the consumer and industrial applications.
The plastic power packages used with the two types of power transistors are:
- JEDEC TO-202 - 15 watt dissipation,
- JEDEC TO-220 - 60 watt dissipation.
The transistor is shown in Figure 3.4. Both plastic package structures are basically the same and share the
following construction features:
- excellent free air power dissipation capability.
- copper heat sink tabs and leads for high heat dissipation and conduction of current in small size packages.
106
The Power Darlington transistors, model D66DV and D67DE, are shown in Figure 3.5 and 3.6. These devices
range from 75 to 150 amperes peak and up to 500 volts. They also feature a single chip design with low thermal
resistance and a high isolation voltage. Reliability test results are shown in Figure 3.10.
FIGURE 3.4. PLASTIC ENCAPSULATED POWER TRANSISTORS
FIGURE 3.5. 75 AMP PEAK POWER DARLINGTON
FIGURE 3.6. 150 AMP PEAK POWER DARLINGTON
107
3.2.3.1 Reliability Prediction of Power Transistors
The predomiriant failure mechanisms found in plastic encapsulated power transistors during operation are related
to temperature and fit the Arrhenius Model of response as shown in Figure 3.7. The model is generally described by
the equation:
A = eA+B/T
= A'e -E/(kT)
failure rate.
T
absolute temperature (OKelvin)
A, B empirically derived constants from life test data.
A
A'
exp(A).
k
E
Boltzman's constant, 8.62 x 10-5 eV/ K.
activation energy, empirically derived from: E = - kB. The slope B is negative.
For example, the Arrhenius Model derived empirically for the power transistors of Figure 3.7 results in:
7289
15.6
-rJ + 273
A =e
Since:
B = -72'89K
E= -k(-7289)
= O.63eV
The activation energy associated with the Arrhenius Model can be used to determine the effect of a higher to a
lower operating junction temperature of devices under test. The model can be used to predict the reliability of
semiconductors under application conditions.
When the logarithm of A is ploUed against a linear reciprocal scale of T, the constants A and B represent the
intercept and slope respectively of the resultant straight line plot, as shown in Figure 3.7
ARR HEN IUS MODEL- PLASTIC ENCAPSULATED POWER
TRANSISTOR
OPERATING LIFE
~-'----r---.-----r-----'-----'-.r-------r--,104
CIl~
a:CIl
:::>a:
0:::>
10~
XO
OX
Of-
CIl
a:
:::>
0
2z
X
a::::>
ILl 0
Il.
o
10 6
~9
~~
ILl 0
f-o
c(0
a:-=
ILIa:
a: ILl
:::>11.
-'CIl
-ILl
). .. e 1~.6-
~
ILl
a:
:::>
-'
Ci
LL
TJ+273
107
0
f-
ILl
::E
j:
~~
ILI-'
c(~
a: "
ILl 0
I!)-
>-
z
FOR TJ = 100°C
c(
). = .02 °/. / 1000 HR
:IE
ILl
c(x
• -<
-<200
175
150
125
100
75
50
T J = JUNCTION TEMPERATURE _·C
FAILURE CRITERIA: leBO> 2 x SPEC. LIMITS. 6 hFE > :t30 %
FIGURE 3.7. RELIABILITY PREDICTION MODEL - PLASTIC ENCAPSULATED POWER TRANSISTORS
108
3.2.3.2 Power Transistor Thermal Characteristics
In power transistor applications it is often desirable to determine the expected reliability of a device operating in
free air with or without a heat dissipator attached. In either case it is necessary to determine the average operating
junction temperature which can be used with the Arrhenius graph of Figure 3.7 to find the expected level of
reliability.
For the free air dissipation case, the operating junction temperature is found using the same relationship.
For the case involving a heat dissipator, the relationship for finding the operating junction temperature is:
TJ =Po(ReJc + ResA) + T A
where ROJe and ROSA are the thermal resistances of the device junction to case, and the heat dissipator to ambient,
respectively and where TJ is the junction temperature; Pn is the power dissipation in the transistor and T A is the
ambient temperature.
NOTE: DURING LIFE TESTS THE TAB TEMPERATURE REFERENCE POINT INDICATED BELOW (Figure 3.8) IS USED FOR
MONITORING AND CONTROLLING THE TEMPERATURE OF THE DEVICE.
~
__1-______ TABTEMPERATURE
REFERENCE POINT
TO-202
TO-220
FIGURE 3.8. TAB TEMPERATURE REFERENCE POINT
General Electric publishes thermal resistance values, junction to ambient (ReJA) and junction to case (ReJd, for
its plastic encapsulated power transistors. When a heat dissipator is employed, the user can calculate or measure its
thermal resistance (ResA) unless it is a commercially available dissipator with specified thermal resistance. It is
assumed that thermal grease is used at the interface between the power transistor and attached heat dissipators so
that the interface thermal resistance can be neglected. If an electrical insulator is used between the power transistor
and heat dissipator, the thermal resistance of the insulator must be included in the value of ResA.
Using the Arrhenius Model, a calculation of the expected reliability can be made by considering the GE D44C
power transistor attached to a heat dissipator having a thermal resistance (ReSA) of 8°C/W. An example of such a
dissipator could be a painted aluminum fin with dimensions of 2-1 /2" x 2-1/2" x 1/32".
Thus, the operating junction temperature us:
TJ =5(4.2 + 8) + 25 =86°C
where TA is 25°C, Po is 5 watts, ReJc and ResA are 4.2 and 8°C/watt respectively.
The use ofthe curve or the model equation in Figure 3.7 yields a reliability prediction for this application of .015%
per thousand hours at a junction temperature of 86°C.
109
3.2.3.3 Power Transistor System Reliability
The electronic equipment designer is often required to predict the life of the equipment in field applications and to
relate the equipment requirements and environments to the component level to be used. An example of this is shown
for a plastiC encapsulated power transistor in a typical application:
Number of Devices/System: 5
VCEO: 50% to 70% of rating
Average Junction Temperature (TJ): 87°C
Environment: Normal Consumer or Industrial Application within Device Ratings.
Operating Time: 6,000 Hours/Year
Reliability Objective: :5 0.3% System Failures/Year
The system reliability objective of 0.3% per year for 6,000 hours is equivalent to a A of 0.05%/ K hours. this would
give a Mean Time Between Failure (MTBF) of:
MTBF = !.. =
= 2 x lO6 hours
A .05%/KHrs
The probability of survival (Ps) of the electronic system for a negative exponential failure distribution and a
constant failure rate would be:
-t
Ps = e MTBF
where t = operating time.
Also, the probability of failure is:
The following results are obtained:
Period
Probability of Survival (Ps)
Probability of Failure (PF)
1 Year
2 Years
3 Years
5 Years
99.7%
99.4%
99.1%
98.5%
0.3%
0.6%
0.9%
1.5%
In order to realize the above system reliability (0.05%/K hours), the reliability of each device must not exceed a
failure rate of 0.05/5 devices or O.OI%/K hours at TJ = 87°C.
Reference is made to Figure 3.7 to determine the multiplier for temperature (MT) when derating from the
accelerated test condition of TJ = 150°C to the application condition of TJ = 87°C.
7289
15.6 -TJ + 273
A=e
Al = 0.196%/K Hrs. at TJ = 150°C
A2 = .0096%/K Hrs. at TJ = 87°C
The multiplier for temperature derating (MT) is
A
MT=~=
20.4
A2
Failure Rate at Accelerated Test Conditions (TJ = 150°C)
A = (20.4) (0.01) = 0.204%/K Hrs.
110
Reliability Demonstration:
VCEO = 70% of Rating
TJ = 150°C
t 1000 hours
n = 350 devices
c 0 failures
'11.= 0.2%/K Hrs. at 50% confidence level.
=
=
A review of the power life test results from Figure 3.9 shows that the above reliability demonstration was
successful for 361,000 device hours which exceeds the 350,000 hours required. This assures that these .,ower
transistors would meet the system reliability objective of 0.3% system failures per year.
STRESS
STRESS
CONDITION
NUMBER
OF LOTS
TOTAL
DEVICES
DEVICE
HOURS
NUMBER OF
CATASTROPHIC
FAILURES
FAILURE
RATE*
BEST
ESTIMATE
% PER 1000
HOURS
Power Life
PT =19 to 32W
TJ =150°C
15
367
361,000
0
0.2
High
Temperature
Reverse Bias
(HTRB)
VCB =80% Rated
Voltage
TA =150°C
2
75
54,200
0
-
Back Bias
Life with
Humidity
(Wet
HTRB)
VCB =80% Rated
Voltage
TA =85°C
RH =85%
t =1,000 HRS.
I
50
50,000
0
-
Humidity
Life
TA =85°C
RH =85%
t =1000 HRS. (min)
24
595
595,000
0
0.11
Storage Life
TA =150°C
t =1000 HRS (min)
24
595
595,000
0
0.11
DEVICE
CYCLES
Temperature
Cycling
-55 to 150°C
15 Cycles
Temperature
Cycling
Power
Cycling
%PER
CYCLES
26
629
9,435
0
0.007
-55°C to +150°C
1,000 Cycles
I
76
76,000
0
0.0009
LlTJ =l30°C,
10,000 Cycles
3
78
795,600
0
0.00009
*Failure Definition - Opens or Shorts
FIGURE 3.9. RELIABILITY OF POWER TRANSISTORS
111
STRESS
STRESS
CONDITION
High Temperature
Reverse Bias
(HTRB)
Storage Life
Humidity Life
TOTAL
DEVICES
DEVICE
HOURS
NUMBER OF
CATASTROPHIC·
FAILURES
46
46,000
0
52
52,000
0
52
12,480
0
VCB =700V
TA =150°C
t =1000 HRS
TA =150°C
t =1000 HRS
TA =40°C
RH =90-95%
t =240 HRS
DEVICE CYCLES
Temperature
Cycling
Power Cycling
-40 to 125°C
20 Cycles
.iTJ =ll5°C
5,000 Cycles
*Failure Definition - Opens or Shorts
52
1,040
0
12
60,000
0
FIGURE 3.10. RELIABILITY OF POWER DARLINGTONS
3.2.3.4 Power MOSFETs
General Electric has incorporated its wide experience gained in the manufacture of bipolar signal and power
transistors with the latest MOS technology to manufacture a broad line of Power MOS Field Effect Transistors. The
latest Computer Aided Manufacturing (CAM) and Computer Aided Design (CAD) techniques are being utilized to
manufacture consistently high quality and high reliability types of devices. The computer system, PROcess
Management and Information System (PROMIS) is utilized to store all in-process data at key steps in the wafer
fabrication area. All outgoing lots are given a quality acceptance test. The reliability of the finished products is
assured by an on-going four-step reliability program. This program includes (1) wafer lot acceptance, (2) finished
product acceptance, (3) product qualification and requalification and (4) reliability modeling. In addition, the
product is subjected to stress-in-time monitoring tests as shown in Figure 3.11.
3.2.3.5 Power MOS Insulated Gate Transistor (IGT)
General Electric has developed a new type of MOS turn oni off power switching device called the Insulated Gate
Transistor (IGT). This combines the prime advantages of Power MOSFETs and bipolar transistors. This results in a
device that has the high input impedance of MOSFETs and the low on-state conduction losses found in bipolar
power transistors. These types of devices are manufactured under the same high technology conditions as described
earlier for Power MOSFETs. These IGT's are being evaluated under similar accelerated reliability tests as described
in the earlier sections of this chapter. An extensive reliability program has been designed and initiated that uses a
multi-level matrix of tests. These are to be used to quantitatively obtain stress mUltipliers for voltage (Mv) and
temperature (MT) as described earlier. These multipliers will be used to predict the long term reliability of the IGTs.
An example of a portion of this matrix is shown in Figure 3.12.
112
DEVICE·
TYPE
STRESS
High Temperature
Reverse Bias
Vos =80% Max Rating
VGS =OV (G =Shorted)
TJ =150°C
t =1240 Hours
same as above
same as above
Humidity Life
85°C, 85% RH
Vos =10V
VGS =OV (G =S)
same as above
same as above
ACTUAL
NO.OF*· DEVICEHRS
NO. OF
@150°C
DEVICES FAILURES
EQUIVALENT
DEVICE HRS.
@90 D C
EA = 1.0eV
RANDOM
FAILURE RATE
%/KHRS.
60%UCL
D84CQ2
39
0
4.84xl04
4.5x106
0.022
D84DQ2
D84ERI
40
40
0
1
4.96xl04
4.96xl04
4.6x106
4.6xl06
0.018
0.070
D84CG2
20
0
104
-
D84DQ2
D84ERI
20
20
0
0
104
104
-
-
-
-
-
DEVICE
CYCLES
Thermal Shock
-55 TO 150°C
tSOAK =15 Minutes
MIL-STD-202F
Method 107D
n =50 Cycles
same as above
same as above
D84CQ2
50
0
2500
-
-
D84DQ2
D84ERI
50
50
0
0
2500
2500
-
-
* TO-220 Package
** Non Functional Failures
FIGURE 3.11. RELIABILITY OF POWER MOSFETs
DEVICE
TYPE
NO. OF
DEVICES
NO. OF·
FAILURES
DEVICE
HOURS
N-IGT
MOXPKG.
20
0
10,000
VeE =200V TJ =100°C
N-IGT
MOXPKG.
20
1
10,000
VeE =100V TJ =150°C
N-IGT
MOXPKG.
20
0
10,000
Humidity Life
85°C, 85% RH
N-IGT
MOXPKG.
158
I
79,000
Temperature Cycle
-40 to 150°C
100 Cycles
N-IGT
MOXPKG
80
0
STRESS
High Temperature Bias
(Collector +), HTB(C+)
VeE =100V TJ =100°C
"'Non Functional Failures
FIGURE 3.12. RELIABILITY OF N-TYPE INSULATED GATE TRANSISTORS (IGTs)
113
3.2.4 PLASTIC ENCApSULATED SIGNAL TRANSISTORS
Another example of how accelerated-testing techniques are used is the assessment of the reliability of plastic
encapsulated signal transistors. A number of in-depth reliability evaluation stress programs have been conducted over
the years. The emphasis in the design of the programs was to evaluate and demonstrate device properties such as chip
surface stability. The devices were randomly sampled from several production lots taken from different product lines
and the devices received no special preconditioning or stress screening. These devices were usually subjected to three
constant stress-in-time tests described earlier. General Electric epoxy encapsulated signal transistors were evaluated
under these tests. A straight line Arrhenius graph and equation shown in Figure 3.13 was obtained from accelerated
operating life test data on non-stress screened devices.
ARRHENIUS MODEL - EPOXY ENCAPSULATED TRANSISTORS
1.07"".L....,1E""""'---'--'--'---'---'---'--------,- 10'
1.33 X 10' DEVICE HOURS
AT PD = 600mW
en
II:
0.1
10'
5J:
~
W
4.3 X 10' DEVICE HOURS
ATPD=360mW
II:
:3
:;:
u.
::?
10'
.01
w
::;;
f=
~
::;;
.001
.0005
A = 0.001% PER
1000 HOURS
10'
-'---,.-.,........,--'T""......,...-lL.--------'- 2 X 10'
600
400
200
100 50
PD = POWER DISSiPATION - mW
FAILURE CRiTERIA: ICSO> IpA, ahFE > ± 30%
aVCE(sat) > ± 25%, aVSE(sat)
> 100 mV
FIGURE 3.13. RELIABILITY PREDICTION MODEL - EPOXY ENCAPSULATES SIGNAL TRANSISTORS
Consider the requirement of determining the reliability of an epoxy encapsulated signal transistor such as the
2N6000 to 2N6017 family. The applied operating conditions of the transistor are such that the average power
dissipation (PD) is a maximum of 80 mW and the ambient temperature (TA) is 25°C. The anticipated failure rate (A)
can be directly calculated for these conditions in the model equation shown in Figure 3.13.
A = exp [17.48 - 38 300j(l490 + 80)] per 1000 hours
=0.0010% per 1000 hours
(1)
for the case where TA is greater than 25°C, such as 55°C, and PD = 80 mW, the following relationship can be used:
(2)
TJ junction temperature
PD power dissipation in the transistor
T A ambient temperature
R8JA thermal resistance, junction to ambient.
For the case where R8JA = 0.2°CjmW, (2) becomes:
114
The equivalent power dissipation at TA = 25°e is found by using (2) again. Thus,
TJ
=71°e =PD x 0.2°e/mW + 25°e
PD = 230mW.
A is found by substituting this equivalent power dissipation into the model equation of Figure 3.13.
A = exp [71.48 - 38300/(1490 + 230)] % per 1000 hours
= 0.0083% per 1000 hours:
3.3 RIELATI\lE
~UMIDlTV
The operating environment of a semiconductor can have an important effect on reliability that can often be greatly
diminished by the use of proper packaging. The effects of high relative humidity on plastic encapsulated devices have
been studied extensively in the industry.
The degradation rate of semiconductor devices by humidity depends in almost all cases on the extent of formation
of a continuous liquid film on the semiconductor surface or on the metal parts and contacts associated with the
device. The amount of surface water adsorption determines 1) surface ion mobility and 2) the rate of ion transfer
under the influence of electric fields or by liquid diffusion with concentration gradients.
The effect of temperature on water-film activated processes is complex. Temperature increases ion mobility and
the degree of ionization of water in a manner analogous to its effect on electron and hole carriers in a semiconductor.
This results in higher conductivities for equal densities of surface adsorbed films. However, temperature also
determines a more critical parameter, the effective relative humidity, RH, of the ambient vapor in equilibrium with the
adsorbed film. As shown in Table 3.2, the RH is the water vapor pressure divided by the theoretical saturated vapor
pressure at the temperature, PV(SAT)' The latter is very close to an Arrhenius type of increasing function (see Table
3.2) so that the effective RH decreases rapidly as the temperature increases. The degree of surface water adsorption is
determined by this relative humidity, not by the absolute value of the water vapor pressure existing at any time in the
air space above a semiconductor or in the pores and interface spacings in the plastic encapsulating the
semiconductor.
Normally, degradation processes are measurable between 103 to 104 hours at RH values exceeding 30% to 50%.
Thus when a semiconductor is powered during a humidity exposure or life test, the heat dissipation at the most
critical junction areas or resistive contacts results in water desorption and in drying of parts most susceptible to
degradation. This occurs even in a plastic encapsulated device where the plastic has a higher solubility for water at
increased temperature. Water from the warmest active device surface will transfer to the gas phase or dissolve into
the plastic bulk and might even condense out on cooler parts of a package enclosure. In Table 3.1, a constant
humidity of 95% RH at 40 o e, or 52.56 torr vapor pressure ambient surrounds a device permeable to water vapor.
Power dissipation results in increasing the dryness as surface temperatures increase near the junction of the
semiconductor. Then outward diffusion of water molecules will proceed as air pockets within the plastic, building up
higher vapor pressures than in the external ambients. Thus, for example, the relative humidity near the junction of
the semiconductor is 12.1 % instead of 95% when the device is operating at a power level which raises the junction
temperature to 85°e as shown in Table 3.1. This physical analysis helps to explain why well designed plastic
encapsulated devices in nonhermetic packages have performed extremely well for years under a range of humidity
and temperature environments.
115
Temperature outside the package = 40°C
Relative humidity outside the package = 95%
Device
Junction
Temperature
Relative Humidity
Near Junction
e)
(%)
40
50
55
65
75
85
100
125
150
(Reference)
95
56.8
44.5
28.0
18.2
12.1
6.92
3.02
1.47
TABLE 3.1: RELATIVE HUMIDITY NEAR SEMICONDUCTOR JUNCTION OF PLASTIC ENCAPSULATED DEVICES UNDER
OPERATING POWER
RH =
Pressure of Water Vapor Present
Pressure of Saturated Water Vapor at Same Temperature
= PRFF/ Pv(sat)
=52.56/ Pv(sat)
PRFF= 95% x 55.3 = 52.56 torr in the device and in the ambient (TA
Pv(sat) saturated vapor pressure at the specified temperature.
Vapor
Temperature
= 40°C, 95% RH) surrounding the device.
eq
Saturated Vapor
Pressure of H2O
In torr pv(sat)
40
50
55
65
75
85
100
125
150
55.3
92.5
1I8.0
187.5
289.1
433.6
760.0 (1 atm.)
1740.9
3570.5
TABLE 3.2. PRESSURE OF AQUEOUS VAPOR OVER WATER
116
3.4 STRESS SCREENING: "GE-XTRA. EXTRA RELIABILITY ASSURANCE PROGRAM"
Failure mechanism studies of field failures suggest that other types of failures occur which are not readily predicted by
the Arrhenius Model. A program4 was initiated to develop a practical, economical stress screen to remove the small
percentage of infant mortality failures from devices to be used for "Hi ReI" automotive applications. These were usually
bond-related or semiconductor chip type failures. These manufacturing type defects are random and usually involve less
than one percent of the popUlation of devices that have passed a series of the regular electrical parameter screens. This
new screen was first developed for improving the reliability of plastic encapsulated signal and power transistors for the
·automotive industry.
The following accelerated stress screen was developed and evaluated:
• Discrete Devices
• Electrical Classification
• 20 Temperature Cycl~s -55 to 150°C
e 12-Minute Soak At Temperature Extremes
• 3-Minute Dwell at TA = 25°C
• Special Electrical Screen at TA = 25°C.
The special electrical screen included the measurement of low voltage parameters such as hFE followed by leakage
currents, breakdown voltages and a repeat of hFE.
An evaluation of thousands of devices subjected to this screen showed that the fallout of potential device failures
from the screen ranged from one to three percent of the popUlation. A shape factor of f3 =0.16 for the Weibull Model
of response was obtained, indicating a decreasing device failure pattern as the number of temperature cycles was
increased. The effectiveness of the screen was demonstrated out to 800 temperature cycles.
Failure mechanism studies were performed on devices removed by this screen. The three most common bond
related failure modes detected by this stress screen occur when the lead breaks at the bond heel, the lead separates
from the metallization on the chip, and the lead separates from the header post. Another bond related failure mode
occurs when bonds are misplaced on the metallization. This results predominantly in emitter-base shorts and less
frequently in collector-base shorts. The stress screen also detects devices with defects such as cracks in the chip and
wire dress shorts.
Analysis of results of this study on stress screen effectiveness showed it was:
o Effective, efficient and economical in reducing automotive assembly-line fallout to 120 parts per million or less.
E> Very effective in reducing field failures during warranty and longer periods.
Over 1.2 million plastic encapsulated bipolar signal transistors have been SUbjected to this temperature cycle
screen. The average bond-related fallout from this stress screen was 1.7 percent.
An analysis was made of field application returns of bipolar transistors. These devices had been returned for
failure analysis and the resulting study showed that the primary failure modes were due to chip cracks, oxide defects,
and opens. These were the same types of failure modes found in the devices that were screened out in the temperature
cycle screen. Therefore, there is a very high probability that they would have been removed by the temperature cycle
stress screen previously described. This stress screen is included in the "GE-XTRA - Extra Reliability Assurance
Program" which follows.
117
POWER TRANSISTORS AND SWITCHES
(Also Applies to Signal Transistors)
GE-XTRA
EXTRA RELIABILITY ASSURANCE PROGRAM
GE-XTRA IS GENERAL ELECTRIC'S ANSWER TO
TRANSISTOR CUSTOMERS WHO ASK:
What can I do to • Reduce early failures?
• Lower warranty costs?
• Eliminate the need for incoming inspection?
• Improve the availability of products?
• Improve my productivity and product flow by reducing line fallout/ rework?
• Reduce my costs by achieving low PPM or AQL levels?
• Increase reliability?
IN ORDER TO ANSWER THESE QUESTIONS, GE-XTRA FEATURES:
•
•
•
•
100% temperature cycle stressing from -55 to +1500 C for 20 cycles!
A second 100% electrical screen test after temperature cycle stressing!
Electrical screen tests engineered for removal of infant mortality failure modes!
Optional 100% elevated temperature electrical screening!
THE GE-XTRA PROGRAM PROVIDES:
• Assured Quality levels of:
0.10% AQL for dc device parameters
0.065% AQL for device catastrophic limits
• Low additional cost!
The following flow chart illustrates the process flexibility which can be tailored to individual applications. Note
that marking is performed bejore the second 100% electrical screen in order to prevent any inadvertent product
mixing during the mark operation.
Also note the reference to the General Electric Publication No. 660.35. "Transistor High-Reliability Program" for
a detailed description of the effectiveness of this screen.
INCOMING DEVICES
100% ELECTRICAL SCREEN AT TA =25°C
PER CUSTOMER REQUIREMENTS
100% TWENTY TEMPERATURE CYCLES
-55° TO 150°C
(REF: GE SEMICONDUCTOR PUBLICATION 660.35)
100% MARK
(NO LEAD FORMING)
100% ELECTRICAL SCREEN AT
T A = 25°C OR TA = 100°C
QUALITY ASSURANCE
OUTGOING LOT ACCEPTANCE
0.1% AQL FOR DC PARAMETERS
0.065% AQL FOR CATASTROPHIC LIMITS
SHIP
118
In addition to these techniques for improving the reliability of power transistors, efforts continue to improve the
dynamic capabilities of these devices. An example of this is described in "Relating Power Transistor Failure Modes
to Post-Failure Characteristics."s This study included the failure of power transistors under controlled circuit
overload conditions, followed by failure analysis of the results. This information is directly applicable to the design
engineer interested in preventing circuit-induced type faults in applications.
3.5 TOTAL QUALlTV CONTROL
The Quality System being used in the manufacture of signal and power transistors is an example of the General
Electric concept of Total Quality Control6 . This concept provides, through established and documented procedures, a
system that assures that the quality needs are incorporated in the product planning, design, manufacturing and final
test phases of the products. The Total Quality Control Concept for these products includes the inspection of
incoming materials, chemicals, solvents, gases and process controls used in the manufacture of these transistors.
Three basic types of instructions are used to control processes. These are Engineering, Manufacturing and Quality
Control Instructions. The Engineering Instruction defines the important variables of the process and the applied
limits to control them. In order to implement the Engineering Instructions, a more specific document, the
Manufacturing Instruction, is generated. The Quality Control Instructions are written for Quality Control personnel
to perform the necessary inspections and tests. These instructions and procedures are implemented to assure that
reliability is built into these devices. The flow charts in Figures 3.14, 3.15 and 3.16 are examples of the major process
steps and the extensive inspections that each device receives during the fabrication and test cycle.
In addition to these inspections, reliability monitoring tests are conducted by Quality Control. The devices used in
these tests are randomly selected from production and do not receive any special preconditioning or stress screening.
This data is used to determine and control the quality of the manufacturing line. The tests include temperature cycling
and life tests. Life test data are collected on the basis of 1,000 hour tests of continuous operating life, high temperature
storage life and humidity life tests. Information from these tests is used to measure product line reliability.
As a complement to the regular monitoring tests several extensive accelerated reliability evaluation programs have
been performed. These programs are statistically designed to incorporate balance, random sampling and replication
in the devices tested so that product unformity, reproducibility and long life stability can be demonstrated. The
accelerated test results an: used to develop reliability models which establish the expected device reliability at application
levels based on performance under extreme ranges of environmental, mechanical, thermal and operating power
levels.
119
HEAT SINK 8
LEAO STRIP
o
SILICON
CHIP
SILICONE
RESIN
WIRE
HEAT SINK Ell
LEAD STRIP
o
PREFORM
SILICON
CHIP
WIRE
SILICONE
RESIN
OPERATION
OPERATION
I]]
~sA~t~~I~NTROL
QU AL ITY CONTROL
6
STORAGE
INSPECTION
6.
STORAGE
FINAL
INSPECTION
SHIP
S
F~~tE~ON
SHIP
FIGURE 3.14. TRANSISTOR ASSEMBLY (JEDEC TO-202)
FIGURE 3.15. TRANSISTOR ASSEMBLY (JEDEC TO-220)
PURCHASED MATERIAL
INCOMING INSPECTION
HEAT SINK
ASSEMBLY
} - - - - - SILICON CHIP
SUBSTRATE
VISUAL INSPECTION
ELECTRICAL CLASSIFICATION
ELECTRICAL ACCEPTANCE
o
O
OPERATION
QUALITY CONTROL
INSPECTION
VISUAL INSPECTION
FIGURE 3.16. POWER DARLINGTON ASSEMBLY
120
3.6 GENERAL CONCLUSIONS
The recent industry trend to improve quality and reliability of electronic components is continually being
reviewed. The general approach taken by General Electric Power Electronics Semiconductor Department (PESD) to
meet the new quality levels in the PPM range and long life requirements of 10 to 20 years is described. The major
conclusions of this approach include:
(l)
!/)
C)
The general quality and reliability of PESD semiconductors are being enhanced by investment in the latest
Computer Aided Design (CAD) and Computer Aided Manufacturing (CAM) equipment including the latest in
clean room facilities.
Quality Control activities are being enhanced with new quality awareness and motivation programs, training and
implementation of the latest statistical process control techniques.
The new Outgoing PPM Program was initiated in October 1982 and the results are reported in the GE Quarterly
Quality Reports. This program has shown an overall improvement of 84% on the combined electrical and
visual/mechanical parameters of products being supplied.
o A new method of predicting the reliability of product life of semiconductors under field use conditions is
described. This method was confirmed with accelerated tests and actual field results for 3 years.
€)
The general approach for obtaining reliability prediction models is given along with models for bipolar signal and
power transistors. Programs are underway to determine these models for the latest Insulated Gate Transistors
(lGT's).
o The technique is shown on how these reliability models are used to determine the acceleration multipliers for
multi-levels of stress voltage (Mv) and temperature (MT)'
o The general approach is given on how to start with a system reliability objective and determine the accelerated test
conditions to demonstrate that the components have the necessary reliability. This is a timely and cost effective
strategy for achieving this objective.
o Reliability performance data are shown for bipolar signal and power transistors, Power MOS transistors and
Insulated Gate Transistors (lGT's).
o The low relative humidity that occurs in a plastic package when the semiconductor is operating and dissipating
power is described. This gives reasons why plastic encapsulated devices have a long life performance.
o The effectiveness of the use of a temperature cycle stress screen for bipolar transistors is discussed in the "GEXTRA Program".
o The overall concept of "Total Quality Control" is used to define procedures in the quality and reliability system.
o The above concepts are being implemented to achieve the excellence required in electronic components to meet the
very low defective levels in PPM and long life performance.
REFERENCES
1. General Electric Meta-Bond™ Diodes. GE Pub. No. 95.46.
2. Erwin A. Herr, Alfred Poe and Albert Fox, "Reliability Evaluation and Prediction for Discrete Semiconductors",
IEEE Transactions on Reliability, Volume R-29, Number 3, August 1980. GE Pub. No. 300.1.
3. Adams, J.D., "Failure Time Distribution Estimation", Semiconductor Reliability, Volume 2, W.H. Von Alven,
pp. 41-52, Engineering Publishers, Elizabeth, NJ 1962.
4. Erwin A. Herr and Alfred Poe, "Transistor High Reliability Program", IEEE Applications Society, October 1977.
GE Pub. No. 660.35.
5. Marvin Smith and Alfred Poe, "Relating Power Transistor Failure Modes to Post Failure Characteristics",
POWER CON 3. April 27, 1981. GE Publication 300.6.
6. Feigenbaum, A.V., Total Quality Control, New York: McGraw Hill, Third Edition, 198.3.
121
122
GE
POWER MOSFET
SPECIFICATIONS
123
124
IRF130,131
D86DL2,K2
~D~~U
14.0 AMPERES
100, 60 VOLTS
RDS(ON) =0.18 0.
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.B45(21.47)
I:
MAX
~~'35B(9'09) MAX
0~~x65l~
--u--n=
T
Features
0.04311.09)
0.038(0.97)
• Polysilicon gate - Improved stability and reliability
DIA
.
-l L_
SEATING PLANE
.426(10.82) MIN.
r
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
~:;;R~NM~ ............,rf-t--IPOINT
• Low input capacitance - Reduced drive requirement
....-t-19J) 1"j[iJ,'-t--'-
.20(5.00)
SOURCE
• Excellent thermal stability - Ease of paralleling
0.162(4.09)
0.15(3.84)
2 HOLES
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mo.
Continuous Drain Current @ T C = 25°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ Tc
Derate Above 25° C
Operating and Storage
Junction Temperature Range
=25°C
DIA.
0.440(11.18)
0.420(10.67)
(unless otherwise specified)
SYMBOL
VOSS
VOGR
IRF130/086DL2
100
100
IRF131/D86DK2
60
60
UNITS
Volts
Volts
10
14
14
A
10M
VGS
Po
56
±20
75
0.6
56
±20
75
0.6
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
30
1.67
30
°C/W
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
125
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
I SYMBOL I .MIN
CHARACTERISTIC
TYP
MAX
UNIT
100
60
-
-
Volts
-
-
250
1000
/J.A
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
14
-
-
A
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250/J.A)
I RF130/DS6DL2
IRF131/DS6DK2
BVDSS
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV; Tc = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
on characteristics*
Tc = 25°C
Gate Threshold Voltage
(VOS = VGS, 10 = 250 ",A)
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = SA)
ROS(ON)
-
0.15
0.1S
Ohms
gfs
3.2
4.0
-
mhos
Ciss
650
SOO
pF
Coss
C rss
-
240
500
pF
55
150
pF
td(on)
-
15
-
10
-
ns
55
-
14
A
56
A
1.0
2.5
Volts
210
1.4
-
ns
/J.C
Forward Transconductance
(VOS = 10V, 10 = SA)
dynamic characteristics
Input Capacitance·
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
ID = SA, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
tr
td(off)
(RGS (EQUIV.) = 100)
tf
30
ns
ns
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 14A)
VSD
-
Reverse Recovery Time
(Is = 14A, dls/dt = 100A//J.sec, TC = 125°C)
trr
ORR
-
Continuous Source Current
Is
-
'Pulse Test: Pulse width:::; 300 /JS, duty cycle:::; 2%
2,4
100
BO
60
~
a:
w
20
10
4
!§
2
'<1"
!S
-
~ <:
y
'"
"
~
.........
~
......
~
'","'-
~
I"
i'
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
10.,
fil
~ r-.. i'
~
~ 1.2
10ms
>'"
100m,
li
0,1
1
4
6
B 10
20
40
"...
/
~
O,B
r--
-- :::::::.
VGSITHI
0,4
0,2
~
60 BO 100
---- -r-.
1.0
. / /ROSIONI
/
1 -~
~ 0.6
a:
IRF130/DB6DL2 _
IRF131/DB6DK2+:
........
c
11
./
V
1.6
Z
SINGLE PULSE
1 Tc '2SoC,
0,2
1,B
~ 1.4
1m,
DC
C 0,6
0.4
CONDITIONS:
t--- _ROS(ON) CONOITIONS: '0 =B,O A, VGS =10V
VGS(TH) CONOITIONS: 10 =250.A, VOS =VGS
N
:;
":--....
1,0
O,B
2,0
i' 100.,
'" ~ "- ~i'
\
a:
u
".,
,,'
'L
1:
S;w
2,2
.......
40
o
200
400 600 1000
-40
o
40
BO
120
160
T J • JUNCTION TEMPERATURE ('C)
VOS' DRAIN-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDstONI AND VGSITHI VS, TEMP.
MAXIMUM SAFE OPERATING AREA
126
~o~[F~
IRF132,133
FIELD EFFECT POWER TRANSISTOR
12.0 AMPERES
100, 60 VOLTS
RDS(ON) = 0.25 n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as aud;o amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.645(21.471
I.. MAX
. ..J~.356(9.091 MAX
I.:..
DIA. ::l
MAX...l~
.065(1.651
f
Features
0.043(1.09)
0.036(0.97)
• Polysilicon gate - Improved stability and reliability
~
--..II-
DIA
.,
SEATING PLANE
.426(10.62) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
0.440(11.16)
0.420(10.67)
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current@Tc.= 25°C
@Tc = 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRF132
100
100
12
IRF133
60
60
12
8
48
8
48
VGS
Po
±20
75
0.6
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
30
1,67
30
°CIW
°CIW
h
260
260
°C
SYMBOL
Voss
VOGR
10
10M
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
127
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
100
60
-
-
-
250
1000
pA
-
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
12
-
-
A
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF132
IRF133
Zero Gate Voltage Drain Current
(Vo'S = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, TC = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
-
Volts
on characteristics·
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc
=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = SA)
ROS(ON)
-
0.1S
0.25
Ohms
9fs
3.2
4.0
-
mhos
Ciss
-
650
SOO
pF
240
500
pF
55
150
pF
15
-
ns
55
ns
10
-
Forward Transconductance
(VOS = 10V, 10 = SA)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics·
Turn-on Delay Time
VOS = 30V
Rise Time
10 = SA, VGS = 15V
-
td(on)
tr
=12.50
Turn-off Delay Time
RGEN = 50n, RGS
Fall Time
(RGS (EQUIV.) = 100)
td(off)
tf
30
ns
ns
source-drain diode ratings and characteristics·
-
A
ISM
-
12
Pulsed Source Current
4S
A
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 12A)
VSO
-
1.0
2.3
Volts
trr
-
210
1.4
-
ns
pC
Continuous Source Current
Is
Reverse Recovery Time
(Is = 14A, dls/dt = 100A/psec, Tc = 125°C)
ORR
-
'Pulse Test: Pulse width:::; 300 ps, duty cycle:::; 2%
2.4
100
BO
60
40
ffi
..........
20
'\
a:
~
~
10
zw
: .'
gs
2
~...
"- IX
4
a:
<.>
z
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
" 1.0
~ O.B
0 0 .6
- 0.4
1"-1'
"- 1'1'
"-
r"-i'
2.0
10"'5
S
4
6 B 10
20
1m•
z
~ 1.2
10m
>'G
1.0
c
lOOms
~ O.B
~
C
0.6
!'l
40
6080100
CONDITIONS:
RDS(ON) CONDITIONS: 10 8.0 A, VGS 10V
VGS(TH) CONDITIONS: 10 250pA. VOS VGS
=
=
=
=
1.8
V
~ 1.6
::;
~ 1.4
a: 0.4
:~m~,:;: H
1
I--
N
lOOps
SINGLE PULSE
Tc ·2S·C
0.2
0.1
"'"
2.2
""'- ""'.......... i'... "~ ,I"-
.1\
\
"'"
~
,
..........
-r--
--
./
.". , . "ROSIONI
[.../
~
~~
V
" r--- r--
-
VGSITHI_
r-
O. 2
200
-40
4006001000
o
40
80
12Q
160
T J • JUNCTION TEMPERATURE ('C)
VDS' DRAIN-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATlNG AREA
128
IRF140,141
D86EL2,K2
~ffi1D~~
27 AMPERES
100,60 VOLTS
ROS(ON) = 0.085
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
n
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.845{21.47)
MAX. g.358(9.09) MAX
"~;.*~ "~"""~
Features
.0.063(1.60) DIA.-l
0.057{1.45)
• Polysilicon gate - Improved stability and reliability
L.
r
.426{10.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
CASE TEMP.
REFERENCE
• Voltage controlled - High transconductance
POINT
.20(5.00)
• Low input capacitance ---.,. Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
0.162(4.09)
0.15{3.84)
2 HOLES
DIA.
0.440{11.18)
0.420{10.67)
maximum ratings (T C =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS :;: 1Mn
Continuous Drain Current@Tc;:: 25°C
@TC =100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC =25°C
Derate Above 25°C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRF140/086EL2
100
100
27
17
108
±20
125
1.0
IRF141/086EK2
60
60
27
17
108
±20
125
1.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
1.00
30
1.00
30
°CIW
°CIW
·h
260
260
°C
SYMBOL
VOSS
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Vs" from Case for 5 Seconds
..
(1) Repetitive Rating: Pulse Width limited by max. junction temperature.
129
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
-
-
250
1000
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
27
-
-
A
ROS(ON)
-
0.073
0.OB5
Ohms
gfs
5.4
7.0
-
mhos
Ciss
-
1400
1600
pF
550
BOO
pF
120
300
pF
-
20
-
ns
-
115
-
ns
50
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =25011A)
IRF140lDB6EL2
IRF141/DB6EK2
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS = Max Rating, x O.B, VGS = OV, Tc = 125°C)
Gate-Source Leakage Current
(VGS= ±20V)
loss
'-
-
I1A
'.
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 = 250 p.A)
Tc
=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 = 15A)
Forward Transconductance
(VOS =10V, 10 =15A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
=30V
Turn-on Delay Time
VOS
Rise Time
10 = 15A, VGS = 15V
td(on)
tr
=50n, RGS =12.5n
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.) = 10n)
id(off)
tf
-
30
ns
source-drain diode ratings and characteristics*
Continuous Source Current
-
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS =OV, Is = 27A)
VSO
Reverse Recovery Time
(Is =27A, dls/dt =100A/Jlsec, TC
trr
QRR
=125°C)
-
27
A
-
10B
A
1.2
2.5
Volts
250
2.0
-
I1C
ns
'Pulse Test: Pulse width:::; 300 IJS, duty cycle:::; 2%
1000
800
600
400
~
2.4
Q.
100
80
60
l2w
40
§
20
z
~
II:
C
_"
........
P'..
~
/'
"'-
v"... 1\
10
B
,
........
"- ,."....,
I' ,,,",
~
."
OPERATION IN THIS AREA "'"
6
,.........
4 MAY BE LIMITEO BY ROSION)
I
I1
~
1.8
~
1.6
:::;
II:
t.)
I
I
I
I
I
c
200
ffi
~
I
r---CONDITIONS:
ROS(ON) CONDITIONS: 10 = 15 A, VGS = 10V
2.0 r---- VGS(TH) CONDITIONS: 10 = 250"A, VOS = VGS
2.2
I
SINGLE PULSE
Tc=2SoC
I
I
4
"
fil
r-...:: " 10~s
r--
1.2
'"
1.0
~
lms
1.4
~
..
100~s
r-......
2
"
IRF141/086EK2
~
IRF140/086EL2
~
i'10ms
I'
r-- ;--r--
z
~ O.B
:--..
./
LV
II:
1--
~
~
--
~
V
r-- -........
0.6
II:
0.4
i'100ms
ROSIONI-
--
~GSITHI- I - -
....
0.2
I'
DC
6 8 10
20
40 60 80100
200
Vas' DRAIN-SOURCE VOLTAGE (VOL TSI
o
400 600 1000
MAXIMUM SAFE OPERATING AREA
-40
o
40
80
120
160
T J , JUNCTION TEMPERATURE (OC)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
130
~[ffio~ [p~U
IRF142,143
24 AMPERES
100, 60 VOLTS
ROS(ON) =0.11 il
FIELD EFFECT POWER TRANSISTOR
This series of N~Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power OM OS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: sWitching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.47)
t
0~~x65*~
Features
III
Polysilicon gate -
.~ DIA.---.l L_
Improved stability and reliability
• No secondary breakdown • Ultra-fast switching o Voltage controlled -
MAX. j~'358(9'09) MAX
0.057(1.45)
1""--
SEATiNG PLANE
.426(10.82) MIN.
Excellent ruggedness
Independent of temperature
High transconductance
CASE TEMP.
REFERENCE
POINT
.20(5.00)
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability -
Ease of paralleling
0.162(4.09)
0.15(3.84)
2 HOLES
DIA.
0.440(11.18)
0.420(10.67)
maximum ratings (T C = 25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mil
Continuous Drain Current @ TC
@Tc
Pulsed Drain Current(1)
= 25°C
=100°C
Gate-Source Voltage
Total Power Dissipation @ T C =25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRF142
100
100
24
15
96
±20
125
1.0
IRF143
60
60
24
15
96
±20
125
1.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.00
30
1.00
30
°CIW
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
131
electrical characteristics (T c
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
BVDSS
100
60
-
-
-
250
1000
pA
IGSS
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
IO(ON)
24
-
-
A
ROS(ON)
-
0.09
0.11
Ohms
9fs
5.4
7.0
-
mhos
VGS = OV
Ciss
1400
1600
pF
. VOS= 25V
f = 1 MHz
Coss
C rss
-
550
BOO
pF
120
300
pF
20
ns
30
-
CHARACTERISTIC
UNIT
I
off characteristics
IRF142
IRF143
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Te = 25°C)
(VOS= Max Rating, x O.B, VGS = OV, Te = 125°C)
loss
Gate-Source Leakage Current
(VGS= ±20V)
Volts
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 /LA)
Te = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 15A)
Forward Transconductance
(VOS = 10V, 10 = 15A)
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
10 = 15A, VGS = 15V
-
td(on)
tr
Turn-off Delay Time
RGEN = 50n, RGS = 12.5n
Fall Time
(RGS (EQUIV.j = 10n)
td(off)
tf
115
50
ns
ns
ns
source-drain diode ratings and characteristics*
IS
-
-
24
A
ISM
-
-
96
A
1.1
2.3
Volts
250
2.0
-
ns
pC
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Te = 25°C, VGS = OV, Is = 24A)
Reverse Recovery Time
(Is = 27A, dls/dt = 100A/psec, Tc = 125°C)
VSO
trr
ORR
'Pulse Test: Pulse width :S 300 I1s, duty cycle :S 2%
2.4
1000
800
600
·400
0;
w
cw
200
a:
~
~
_
I-
100
BO
60
2
w
40
!5t.l
20
2
«
a:
10
a:
c
_0
'x'
"'\
~
r"- I'~
,/
.......
6 ~ OPERATION IN THIS AREA .......
1
~MAY
BE lIMITEO BY ReS(ON)
I
" I"...:
I
r-S;NGLE PULSE
Tc =2SoC
I
I
4
1.8
1.6
::;;
a:
" "'I'
"r--.." ~
//1\
N.
'"
C
1m.
1.2
~ 0.8
~l3
..... 10ms
a:
.......
-- ---- --
r-- r--- r--
1.0
.-
.-
V
~
2
........
r--....
IRF142
0
2
1'10#.
100#s
V
. . . . .V
1--
0.6
0.4
..... lOOms
ReS(ON)-
~GS(TH)
-
0.2
~ DC
20
40 60 SO 100
200
6 B 10
Vos. DRAIN-SOURCE VOLTAGE (VOLTS)
o
400 600 1000
MAXIMUM SAFE OPERATING AREA
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
132
IRF150,151
D86FL2,K2
~D~~
40 AMPERES
100,60 VOLTS
ROS(ON) = 0.055 il
FIELD EFFECT POWER TRANSISTOR
This series of N:-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0845(21.47)
MAX. H·35819.09J MAX
",;~."~~ ,~,~~-
Features
0.063(1.60) DIA . .....J L
0.057(1.45)
II
• Polysilicon gate - Improved stability and reliability
.426(10.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
CASE TEMP.
REFERENCE
POINT
.20(5.00)
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
0.162(4.09)
0.15(3.84)
2 HOLES
DIA.
0.440(11.18)
0.420110.67)
maximum ratings (TC = 25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ T C = 25° C
@TC= 100°C
Pulsed Drain 9urrent(1)
Gate-Source Voltage
Total Power Dissipation @TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRF150/086FL2
100
100
40
25
160
±20
150
1.2
IRF151/086FK2
60
60
40
25
160
±20
150
1.2
UNITS
Volts
Volts
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
0.83
30
0.83
30
°CIW
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
A
A
A
Volts
Watts
WloC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
133
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
-
250
1000
f.lA
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
40
-
-
A
ROS(ON)
-
0.050
0.055
Ohms
9fs
8.1
10
-
mhos
-
2800
3000
pF
1000
1500
pF
225
500
pF
25
ns
75
-
-
40
A
ISM
-
160
A
VSO
-
1.3
2.5
Volts
trr
ORR
-
300
2.8
-
ns
JlC
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 JlA)
IRF150/D86FL2
IRF151/D86FK2
Zero Gate Voltage Drain Current
(Vos =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, TC =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p,A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =20A)
Forward Transconductance
(VOS =10V, 10 =20A)
dynamic characteristics
=OV
Ciss
Output Capacitance
VOS =25V
Coss
Reverse Transfer Capacitance
C rss
f =1 MHz
switching characteristics*
Turn-on Delay Time
VOS =30V
td(on)
Rise Time
10 =20A, VGS =15V
tr
Turn-off Delay Time
RGEN =50.0, RGS =12.5.0
td(off)
Fall Time
(RGS (EQUIV.) =10.0)
tf
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Continuous Source Current
-
Is
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =40A)
Reverse Recovery Time
(Is =40A, dls/dt =100AlJlsec, TC
=125°C)
145
95
ns
ns
ns
'Pulse Test: Pulse width :5 300 /lS, duty cycle :5 2%
2.4
1000
BOO
600
400
~
III
~
w
II:
fS
.....
100
40
~
Q
_"
...... r-.... .......
;x~
Jt.
lOp.
, ,
""
",,/'
20
"-~
8 t- OPERATION IN THIS AREA
6 I- MAY BE LIMITED BY ROSION)
4
PUL~E
I- SINdLE
2
Tc =250C
j
I
4
.......
r----
........
1.4
~
!:: 1.2
"-
on
"
~
10ms
":. 0.8
z
o
a
lOOms
......
r-...
1.0
z
I......
......
1.6
~
.... 1m.
~
1.8
~
II:
lOOp •
~"-
'" "-
~
\
10
1
2.0
~
:::;
......
.......
tJ
II:
t--
I
I
I
I
1
CONDITIONS:
RD(ON) CONDITIONS: 10 =20 A, VGS = 10V
VGS(i'H) CONDITIONS: 10 = 250pA, VDS =VGS
Q
200
l :g
I
2.2
0.6
II:
IRFI51/D86FK2
~ IRF150/D86FL2
0.4
----.--- -r---
,..
V
".........
.--
:--- r--
~;-
-
0.2
DC
o
6 8 10
20
40 60 80100
200
VOS' DRAIN-SOURCE VOLTAGE (VOLTS)
ROSIO~
400 600 1000
MAXIMUM SAFE OPERATING AREA
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE (OC)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
134
~[R1D~[P~
IRF152,153
33 AMPERES
100, 60 VOLTS
RDS(ON) =0.08 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.645121 471
I':
MAX
~~'35619'091 MAX
06~~X65l~
T
Features
.0.063(1.601
• Polysilicon gate - Improved stability and reliability
---u--n=
DIA.-.J
0.05711.451
L.
SEATING PLANE
.426110.821 MIN.
"
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching -
Independent of temperature
• Voltage controlled - High transconductance
CASE TEMP
REFERENCE
POINT
.2015.001
• Low input capacitance - Reduced drive requirement
•
E~cellent
thermal stability - Ease of paralleling
0.16214.091
0.1513.841
2 HOLES
DIA.
0.440111.161
0.420(10.671
maximum ratings (T C = 25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current@ TC = 25°C
@TC= 100°C
Pulsed Drain Current(')
Gate-Source Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRF152
100
100
33
20
132
±20
150
1.2
IRF153
60
60
33
20
132
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
0.83
30
0.83
30
°C/W
°C/W
h
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
135
electrical characteristics (T c
=25° C) (unless otherwise specified)
CHARA,CTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
-
Volts
-
250
1000
pA
IGSS
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
33
-
-
A
ROS(ON)
-
0.06
O.OB
Ohms
gfs
B.1
10
-
mhos
Ciss
-
2BOO
3000
pF
Coss
C rss
-
1000
1500
pF
-
225
500
pF
-
25
-
ns
145
95
-
ns
-
-
75
-
ns
-
-
33.
A
ISM
132
A
VSO
-
1.2
2.3
Volts
trr
-
300
2.B
-
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRF152
IRF153
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x O.B, VGS =OV, Tc =125°C)
loSS
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 ,.,.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =20A)
Forward Transconductance
(VOS =10V, 10 =20A)
dynamic characteristics
=OV
VOS =25V
f =1 MHz
Input Capacitance
VGS
Output Capacitance
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS
=30V
td(on)
Rise Time
10 =20A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS
Fall Time
(RGS (EQUIV.)
tr
=12.50
td(off)
tf
=100)
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =33A)
Reverse Recovery Time
(IS = 40A, dls/dt =100Alpsec, Tc = 125°C)
ORR
ns
pC
'Pulse Test: Pulse width :5 300 f.l.S, duty cycle:5 2%
2.4
1000
800
600
400
_
~
a:
...
...
~
~
100
80
60
40
~
20
u
Z
"-
\V
/
10
a:
8
6
Q
_"
2
1
"
./
a:
;;:
I-
I
=
I
=
=
Q
200
!z...
I
I
I
I
CONDITIONS:
ROS(ON) CONOITIONS: 10 20 A. VGS 10V
2.0 r-VGS(TH) CONOITIONS: 10 = 250.A. VOS VGS
2.2
......
""~
1\
OPERATION IN THIS AREA
MAY 8E LIMITED BY ROSIONI
r- SINdLE PUJE
T =25.C
1
I
4
"
I"
::;
~
a:
10~s
~
100.,
.... 1m,
1.4
~
1.2
"
1.0
~
......
z
Z 08
.
..:
10ms
o
~ 0.6
lOOms
a:
IRF153
"-
~IRFI52
i'
R~V"
1.6
;:
'"'"
" ""-
1.8
0.4
--
- r--
l--- ~
V
~
f..--
r-- r-I-
~~
-
0.2
DC
6 8 10
20
40 60 80 100
200
V DS' DRAIN -SOURCE VOLTAGE (VOLTS)
-40
400 600 1000
o
40
80
120
160
T J. JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
136
IRF230,231
D86DN2,M2
~D~[?~
9.0 AMPERES
200,150 VOLTS
ROS(ON} = 0.4 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power OM OS technology
to achieve low on-resistance with excellent device ruggedness and reliability,
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.845(21.47)
MAX
::l~.358(9.09) MAX
06~~X65l~
f~
Features
0.043(1.09)
0.038(0.97)
• Polysilicon gate - Improved stability and reliability
DlA.-II.I
SEATING PLANE
.426(10.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
0.162(4.09)
0.15(3.84)
2 HOLES
maximum ratings (T C =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T C = 25° C
@TC= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
DIA.
0.440(11.18)
0.420(10.67)
(unless otherwise specified)
SYMBOL
IRF230/0860N2
200
200
9.0
6.0
36
±20
75
0.6
IRF231/0860M2
150
150
9.0
6.0
36
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
ReJc
ReJA
1.67
30
1.67
30
°CIW
°CIW
TL
260
260
°C
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
137
electrical characteristics (T c = 25° C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
200
150
-
-
Volts
-
250
1000
pA
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
9.0
-
-
A
-
0.34
0.4
Ohms
gfs
2.4
3.0
-
mhos
Ciss
-
650
800
pF
150
450
pF
30
150
pF
15
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF230/D86DN2
IRF231/D86EM2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS= 10V, Vps = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 5.0A)
ROS(ON)
Forward Transconductance
(VOS = 10V, 10 = 5.0A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
f = 1 MHz
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 5.0A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
-
td(on)
tr
td(off)
tf
25
30
20
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 18A)
Vso
Reverse Recovery Time
(Is = 9.0A, dls/dt = 100Alpsec, Tc = 125°C)
trr
ORR
-
-
9.0
A
-
36.0
A
-
1.0
2.0
Volts
300
2.5
-
ns
pC
·Pulse Test: Pulse width :5 300 ps, duty cycle :5 2%
100
BO
60
2.4
2.2
CONDITIONS:
40
......
ffi
20
~
!
10
~
!;;w
4
!5u
2
'"
!5
1.0
a:
;;:
"" )<
\
a:
~/
.......
OPERATION IN THIS AREA
MAY BE LIMITED BY Ros ON
O.B
" 0.6
-
I
0.4
. . . . r--
c
w
10.,
N
100.,
........
.......
"
~
1.B
::;
1.6
~
a:
1.4
~
"
.........
~ 1.2
1m'
~
>
10ms
lOOms
DC
1.0
!i1
O.B
j
0.6
«
IRF230/OBBON2 ....,
STGLE,PULSE
Tc=2SoC
0.2
....... 1'
""-
"~
1\
ROS(ON) CONDITIONS: 10 = 5.0 A. VGS = 10V
VGS(TH) CONDITIONS: 10 = 250p. VOS = VGS
2.0
........
'" ""
.'
L
.......
/
/'
./"
r--
/AOS(ONI
-.....-- - . /V
...- ".........
./
V
r--
t----..
l"-
VGS\THI
I-
a:c 0.4
IRF231/0BBOM~ ~
0.2
o
0.1
1
4
6
B 10
20
40
60 BO 100
Vos. DRAIN-SOURCE VOLTAGE
200
400 600 1000
(VOLTS)
-40
40
BO
120
160
T J' JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSION) AND VGSITH) VS. TEMP.
138
~~D~[?~
IRF232,233
8.0 AMPERES
200, 150 VOLTS
ROS(ON) = 0.6 0
FIELD EFFECT POWER TRANSISTOR
This series. of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.47)
L. MAX . .J~.358(9.09) MAX
I=- orA. ::l
.065(1.65)
MAX.
Features
0.043(1.09)
0.038(0.97)
• Polysilicon gate - Improved stability and reliability
*~
OIA...J
.
L_
-li
SEATING PLANE
.426(10.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching -
Independent of temperature
• Voltage controlled - High transconductance
~~~:Rr::c"E -'-if+t-iPOINT
.20(5.00)
SOURCE
• Low input capacitance - Reduced drive requirement
T~ff---''-
• Excellent thermal stability - Ease of paralleling
0.440(11.18)
0.420(10.67)
maximum ratings (T C = 25°C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
Continuous Drain Current @ Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(11
Gate-Source Voltage
Total Power DiSSipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRF232
200
200
8.0
5.0
32
±20
75
0.6
IRF233
150
150
8.0
5.0
32
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
R(JJC
R(JJA
1.67
30
1.67
30
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal ReSistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
139
°CIW
electrical characteristics (Tc
CHARACTERISTIC
=25° C) (unless otherwise specified)
I SYMBOL I MIN
MAX
TYP
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF232
IRF233
200
150
-
-
Volts
-
250
1000
pA
-
-
±100
nA
VGS{TH)
2.0
-
4.0
Volts
10{ON)
8.0
-
-
A
ROS(ON)
-
0.4
0.6
Ohms
gfs
2.4
3.0
-
mhos
-
650
800
pF
150
450
pF
30
150
pF
15
-
BVDSS
Zero Gate Voltage Drain Current
(VOS= Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
on characteristics*
Gate Threshold Voltage
(V OS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 5.0A)
Forward Transconductance
(VOS = 10V, 10 = 5.0A)
dynamic characteristics
Input Capacitance
VGS= OV
Ciss
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 5.0A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td{on)
tr
td{off)
tf
-
30
-
20
-
-
8.0
A
32
A
1.0
1.8
Volts
-
300
2.5
-
25
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = B.OA)
Vso
Reverse Recovery Time
(Is = 9.0A, dls/dt = 100Alj1sec, Tc = 125°C)
trr
ORR
ns
pC
·Pulse Test: Pulse width ::5 300 IlS, duty cycle::5 2%
2.4
100
I
BO
60
40
fa
2.2
20
II!
~
10
...z
6
:;;
:'!:
w
B
g;
u
\
\/
4
II!
2
z
~/
V
<
1.0
~ 0.8
Q 0.6
- 0.4
,
"
/~,
.~
",
..........
,
, ",
~ ';-..
"' "
.........
1\
OPERATION IN THIS AREA
MAY BE LlMITEO BY ROSfON)
o
;-.. ......... i '
i'~
w
101.!5
N
::;
I I
~
~_
i ' 1m,
~ 0.8
~ 0.6
DC
:~m~:;::
T c =2SoC
0.2
- r--V
1.2
t--
>
lOOms
a:.~
./
.LnOSIONI
1.6
1.4
E
~ 1.0
"- i'10m,
/
=
20
1.
."""
v"
~ .......
10
.......
.......
8
/
........
"6
"
OPERATION IN THIS AREA
4 MAY BE LIMITED BY RDSIONI
"
"
-;;:::
~~
:--.,
"-
r-.. ........
i
1.61---+--+--+--li----+--I--+-/-¥~1---+----l
Sl
1.41---+--+--+---l~-+-_t. /--,,;Io':""-+--I---+-_t
~
100~s
r-.. ....,
l.0I---+--+--+--=~~~--I--+---+--+--+----l
z
~ 0.81-_--+V--:P~+----iI---+--I-----"r-.......,j;;--;::--+~HIf-ooI I--IRF243
~IR1242
.~ 0.61-"""~--t--+----iI---+--I--t---+--+---P"'-I
a:
I-
10ms
2 -SINdLE PUL~E
Tc =2SoC
DC'
i
'- 'lOOms
1
1
2
4
6 8 10
20
40 60 80 100
200
400 600 1000
VOS' DRAIN-SOURCE VOLTAGE (VOLTS)
I I I
_V----
~ 1.2t--q=--t--+----i,---+-:7"'f/~-t--_t_-t__-+--I
~
r---r---r--./'/
10~s
lms
"- i' r-..
V
"-
MAXIMUM SAFE OPERATING AREA
0.41---+--+--+--lI---+~-I--+---+--+--+----l
0.2 t--t--t--_t_---il---+--+--t---+--+--_t_-l
O~--~40~~--~O~~--4~O--~~8~0--~~12~0--~~160
TJ. JUNCTION TEMPERATURE ('C)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
144
IRF250,251
D86FN2,M2
~D~[P~
30 AMPERES
200, 150 VOLTS
ROS(ON) =Q.085 0
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE',s advanCed Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
O.845t21.47~
MAX
-:i~'35B(9'09) MAX
O~~lx65l~
T
Features
-----u---n=
---.J I-
.0.063(1.60)
DIA
0057(145)1
• Polysilicon gate - Improved stability and reliability
SEATING PLANE
.426(10.82) MIN
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
CASE TEMP.
REFERENCE
POINT
20(5.00)
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
0.162(4.09)
O. '5(3.B41
2 HOLES
DIA.
0.440(11.18)
0.420(10.67)
maximum ratings (TC =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
Continuous Drain Current @ T C = 25° C
@TC= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRF250/086FN2
200
200
30
19
120
±20
150
1.2
IRF251/086FM2
150
150
30
19
120
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
0.83
30
0.83
30
°C/W
°C/W
h
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
145
electrical characteristics (T c = 25° C)
(unless otherwise specified)
CHARACTERISTIC
I
1
SYMBOL
1
UNIT
MIN
TYP
MAX
200
150
-
-
-
250
1000
pA
±100
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF250/D86FN2
IRF251/D86FM2
BVDSS
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
-
Volts
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
IO(ON)
30
-
-
A
ROS(ON)
-
0.075
0.085
Ohms
gfs
7.2
10
-
mhos
-
2800
3000
pF
520
1200
pF
-
120
500
pF
20
ns
65
-
-
30
A
120
A
1.3
2.0
Volts
345
4.5
-
ns
pC
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Tc = 25°C
Gate Threshold Voltage
'(VOS = VGS, 10 = 250 JJ.A)
On-Rtate Drain Current
(VGS 10V, VOS 10V)
=
=
Static Drain-Source On-State Resistance
(VGS 10V, 10 = 16A)
=
Forward Transconductance
(V OS = 10V, 10 = 16A)
dynamic characteristics
. Input Capacitance
VGS = OV
Clss
VOS = 25V
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
C rss
switching characteristlcs*
Turn-on Delay Time
VOS
=90V
-
td(on)
Rise Time
10 =16A, VGS
Turn-off Delay Time
RGEN
=15V
tr
=500, RGS = 12.50 td(off)
Fall Time
tf
(RGS (EQUIV.t =100)
source-drain diode ratings and characteristics*
Continuous Source Current
=
=
=
=
-
ISM
Diode Forward Voltage
(Tc 25°C, VGS OV, Is 30A)
Reverse Recovery Time
(Is 30A, dls/dt 100Alps, Tc 125°C)
VSO
=
trr
ORR
=
90
-
Is
Pulsed Source Current
75
ns
ns
ns
·Pulse Test: Pulse width :s; 300 I1S, duty cycle:S; 2%
1000
800
600
400
iii
ffi
2.4
2.2 _
2.0 -
~
~
:::;
100
'(j,
c
1m.
1.0
2
~ 0.8
r......
I
4
I......
......
i'...
...........
PUL~E
T =2SOC
C1
......
.... r--...
......
~
a:
i'...
1.8
z
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
I- SINGLE
1
I,
......
........
,/
40
20
/'
c
200
~ :g
~
a:
I
I
I
I
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 =16 A. VGS =10V
VGS(TH) CONDITIONS: 10 =250pA. VOS =VGS
20
40
"
~
lams
a:
...... lOOms
0.6
0.4
....... ::::; .IRF251/D86FM2
0.2
IRF250/D86FN2
a
60 80 100
200
400 600 1000
--
-
-40
i-"'"
V
a
./
V
r--
40
V
ROSIONI-
--- ---VGSITHI_
80
120
r---
160
T J , JUNCTION TEMPERATURE ('CI
VOS' DRAIN-SOURCE VOL TAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
r-- r-- I--.
V
/
./
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
146
~o~[p~1J
IRF252,253
FIELD EFFECT POWER TRANSISTOR
25 AMPERES
200,150 VOLTS
ROS(ON) = 0.12 n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/rel·ay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.B45121.47)
MAX. g.35BI9.09) MAX
";:t"*~--=t '"' ' "'"
Features
.~ DIA.---..I
• Polysilicon gate - Improved stability and reliability
005711.451
L
"I r
.426110.B2) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
CASE TEMP.
REFERENCE
POINT
• Low input capacitance - Reduced drive requirement
.2015.00)
• Excellent thermal stability - Ease of paralleling
0.16214.09)
0.1513.B4)
2 HOLES
DIA.
0.440111.18)
0.420110.67)
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current@ TC = 25°C
@TC= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
SYMBOL
Voss
VOGR
,
IRF252
200
200
25
16
100
±20
150
1.2
IRF253
150
150
25
16
100
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
0.83
30
0.83
30
°C/W
°C/W
TL
260
260
°C
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
147
electrical characteristics (T c
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
200
150
-
-
-
Volts
-
-
250
1000
pA
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
25
-
-
A
0.10
0.12
Ohms
-
mhos
·off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF252
IRF253
Zero Gate Voltage D.rain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
lOSS
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 fJ.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 16A)
-
ROS(ON)
Forward Transconductance.
(VOS = 10V, 10 = 16A)
gfs
7.2
10
-
2800
3000
pF
520
1200
pF
-
120
500
pF
-
20
-
ns
75
-
ns
-
90
-
ns
-
65
-
ns
'25
100
A
A
Volts
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 16A, VGS = 15V
td(on)
tr
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(off)
tf
source-drain diode ratings and characteristics'"
Pulsed Source Current
ISM
-
-
Diode Forward Voltage
(TC = 25°C, VGS = OV, IS = 25A)
VSO
-
1.2
1.8
trr
-
345
4.5
-
Continuous Source Current
IS
Reverse Recovery Time
(Is = 30A, dls/dt = 100Alps, Tc = 125°C)
QRR
ns
pC
'Pulse Test: Pulse width :5 300 f1S, duty cycle :5 2%
2.4
1000
800
600
400
m
ffi
D.
~
f-
iiia:
~
_Q
~
100
80
60
40
,"
'\
,/
10
/
1\
::;
~
a:
:-......
" ,'"'" i'o'""
\.
20
~
"-
'" "'""
~
.
"
10~s
"
~
100~s
~
..... lms
~
=
=
I
I
./
=
6 I- MAY BE LlMITEO BY ROSIONI
4
r-
SINdlE pUlle
T =2S'C
I
I
2
4
........
'" "
I'....
Dc-......
6
1.8
1.6
1.4
1.2
1.0
r--- r---
Z
-:. 0.8
z
o
0.6
8 ~ OPERATION IN THIS AREA
1
2.0
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 16 A. VGS = 10V
VGS(TH) CONDITIONS: 10 250pA. VOS VGS
c
200
u
~
a:
c
~
I
I
I
2.2
is
10ms
a:
0.4
-------
.......
-
,,/'
./'
./
V
----I-
/
./'
ROSIONI-
",
r-~~ I--.
'" lOOms
-
0.2
,---IRF2S3
~IRF252
8 10
20
40 60 80100
200
VOS' DRAIN-SOURCE VOLTAGE (VOL TSI
o
400 600 1000
MAXIMUM SAFE OPERATING AREA
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
148
IRF330,331
086002,01
~[RjD~~
5.5 AMPERES
400, 350 VOLTS
ROS(ON) = 1.0!l
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.47)
~ MAX ~~.358(9.09) MAX
0~~X65l~
T
Features
0.043(1.09)
0.038(0.97)
• Polysilicon gate - Improved stability and reliability
CIA
~
SEATING PLANE
-1 L
·11
.426(10.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
~~;;RTE~~E --L...1f-+t-.f-+j['),LJ----'L..
POINT
.20(5.00)
SOURCE
• Low input capacitance - Reduced drive requirement
• Excellent thermal stabtJity - Ease of paralleling
DRAIN
0.162(4.09)
0.15(3.84)
2 HOLES
maximum ratings (TC =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current@ Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
DRAIN
(CASE)
CIA.
0.440(11.18)
0.420(10.67)
(unless otherwise specified)
IRF330/D860Q2
400
400
5.5
3.5
22
±20
75
0.6
IRF331/0860Ql
350
350
5.5
3.5
22
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
WfOC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
30
1.67
30.
°C/W
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistan<;:e, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
149
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
250
1000
JlA
±100
nA
off characteristics
Drain-Source Breakdown Voltage
IRF330/DS6DQ2
IRF331/DS6DQ1
(VGS = OV, 10 = 250 JlA)
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, Tc = 125°C)
Gate-Source Leakage Current
(VGS = ±20V)
loss
-
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
5.5
-
-
A
ROS(ON)
-
O.S
1.0
Ohms
gfs
2.1
2.5
-
mhos
Ciss
Coss
Crss
-
650
100
15
SOO
300
SO
pF
pF
pF
td(on)
tr
-
15
20
-
-
30
20
-
ns
ns
ns
ns
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 3A)
Forward Transconductance
(VOS = 10V, 10 = 3A)
dynamic characteristics
Input CapaCitance
Output Capacitance
VGS = OV
VOS = 25V
f = 1 MHz
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VOS = 175V
10 = 3A, VGS = 15V
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(off)
tf
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 5.5A)
Reverse Recovery Time
(Is = 5.5A, dls/dt = 100AIJls, Tc= 125°C)
-
5.5
22
A
A
VSO
-
1.0
1.6
Volts
trr
QRR
-
360
4.0
-
Is
ISM
ns
JlC
'Pulse Test: Pulse wldth::5 300 p.s, duty cycle::5 2%
100
BO
60
40
2.4
2.2
CONDITIONS:
ROSION) CONDITIONS: 10 3.0 A, VGS 10V
VGS(TH) CONDITIONS: 10 250~A, VOS VGS .,-
=
=
2.0
~
20
i'
II:
~
~
...2
w
10
:
4
"2
2
<
g;
1.0
O.B
C 0.6
- 0.4
1//
"
.......
.......
"
~
"~ " , .....
'r-. ."'.....
......
........
SINGLE PULSE
I Tc·2SoC I
.......
~
1.2
1~'
>"
o
2
1.0
..:
r-,/'
r---
V
V
--
-r--,
VG ITHI-
~
0.2
IRF330/0B6002~
6 B 10
20
40 60 BO 100
200
Vos' DRAIN-SOURCE VOLTAGE IVOLTSI
...-
--
L
. /.....
a: 0.4
DC
-+::::
/
V
..... V
Q
lOOt
"'"
O.B
~ 0.6 1 -
lams
"-
=
=
.,- /ROSONI
1.4
~
Z
IRF331/0B600~
4
1.6
100f'
..............
...........
1.8
~
II:
10.,
...........
..........
I I
~
::;
.........
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
0.2
O. 1
~
)('I'
II:
~
I'
r--lX
o
400 600 1000
-40
0
40
BO
120
160
TJ , JUNCTION TEMPERATURE I'C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
150
~o~[p~
IRF332,333
FIELD EFFECT POWER TRANSISTOR
4.5 AMPERES
400, 350 VOLTS
ROS(ON) = 1.5 il
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
0.B45121.47)
MAX. g . 3 5 BI9.09) MAX
·:';"~~_=r~"oo"~'
f-
Features
0.04311.09)
0.03810.97)
• Polysilicon gate - Improved stability and reliability
DIA
"
--.l
.426110.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
~~~;RTE~~ ~~...
@ i - I -.....
POINT
• Low input capacitance - Reduced drive requirement
.2015.00)
SOURCE
• Excellent thermal stability - Ease of paralleling
0.16214.091
0.15(3.84)
2 HOLES
maximum ratings (TC = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mil
Continuous Drain Current@Tc = 25°C
@TC =100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
DRAIN
DRAIN
DIA.
(CASE)
0.440111.1B)
0.420(10.67)
(unless otherwise specified)
IRF332
400
400
4.5
3.0
18
±20
75
0.6
IRF333
350
350
4.5
3.0
18
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
1.67
30
1.67
30
°C/W
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
151
electrical characteristics (T c = 25° C)
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
TYP
MIN
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250/1A)
IRF332
IRF333
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
BVDSS
loSS
400
350
-
-
250
1000
/1A
±100
nA
-
Volts
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
4.5
-
-
A
ROS(ON)
-
1.2
1.5
Ohms
gfs
2.1
2.5
-
mhos
VGS = OV
Ciss
650
800
pF
Output Capacitance
VOS = 25V
300
pF
f = 1 MHz
Coss
C rss
100
Reverse Transfer Capacitance
-
15
80
pF
td(on)
-
15
tr
-
-
ns
20
-
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(V OS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 3.0A)
Forward Transconductance
(VOS = 10V, 10 = 3.0A)
dynamic characteristics
Input Capacitance
switch i ng characteristics *
Turn-on Delay Time
VOS = 175V
Rise Time
10 = 3A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(off)
tf
30
20
ns
ns
ns
source-drain diode ratings and characteristics*
IS
-
Pulsed Source Current
ISM
-
Diode Forward Voltage
(Tc = 25°C, VGS = OV, IS = 4.5A)
VSO
-
Continuous Source Current
Reverse Recovery Time
(Is = 5.5A, dls/dt = 100Al/1s, Tc = 125°C)
trr
ORR
-
4.5
A
18
A
0.9
1.5
Volts
360
4.0
-
ns
/1C
'Pulse Test: Pulse width :5 300 Jls, duty cycle:5 2%
100
80
60
40
2.4
1
2.2
o
20
,~
a:
~
~....
zw
10
:
4
a:
~
2
u
z
"
o
z
..:
..............
"- "I'" l°~f
1.2
1.0
0.8
..,..V
-
I--- . /
./
,
,/'
V
- -- --./"
. VGSITH)- ~
0.4
DC
6 8 10
20
40 60 80 100
200
VOS' DRAIN-SOURCE VOLTAGE (VOL TSI
L
1.4
Z
~ 0.6 I o
a:
lams
./
...... /ROSONI
1.6
a:
100y
;,r
1.8
:::;
;i
0.2
:m~r~
o. 1
1
=
=
2.0
ffi
1
RDS(ON) CONDITIONS: 10 3.0 A. VGS 10V
VGS(TH) CONOITIONS: 10 250!H----''POINT
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability -
.20(5.00)
SOURCE
Ease of paralleling
DRAIN
0:'62{4.09)
0.15(3.84)
2 HOLES
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current@Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
DIA.
0.44011 1.18)
0.420(10.67)
(unless otherwise specified)
IRF342
400
400
IRF343
350
350
8
8
5
32
±20
125
1.0
5
32
±20
125
1.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Rf)JC
Rf)JA
1.00
30
1.00
30
°C/W
°C/W
TL
260
260
°C
SYMBOL
VDSS
VOGR
10
10M
VGS
PD
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
155
=25
electrical characteristics (T c
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
400
350
I
TYP
MAX
UNIT
-
-
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS:: OV, 10 = 250 pA)
IRF342
IRF343
Zero Gate Voltage Drain Current
(V OS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
-
-
-
250
1000
pA
IGSS
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
8
-
-
A
ROS(ON)
-
0.70
0.80
Ohms
9fs
3.2
4.5
-
mhos
Ciss
-
1400
1600
pF
210
450
pF
37
150
pF
-
20
ns
70
-
30
-
ns
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 5A)
Forward Transconductance
(V OS = 10V, 10 = 5A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS= 175V
Rise Time
10 = 5, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
20
ns
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, IS = SA)
VSO
-
Reverse Recovery Time
(Is = 10A, dls/dt = 100Alpsec, Tc = 125°C)
trr
ORR
-
Continuous Source Current
·Pulse Test: Pulse Width
~
IS
2.4
2.2
~
20
f~ ~
a:
r
10
~ ~
t15 4
~
z
2
;;:
1.0
0.8
0.6
is
1>
" I"
.\(
\
V/
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
0.4
0.2
" 'r-.
.......
a:
u
f- SINdlE
PU'l~E
T =2SoC
'I
0.1
1
I
4
8
A
32
A
0.8
1.9
Volts
420
5.5
-
ns
pC
-
300 ps. duty cycle ~ 2%
100
80
60
40
ffi
-
r-...
" t'... "-
"
"~
2.0 -
I
bONDmONS:
ROS(ON) CONDITIONS: 10 5.0 A, VGS
I
=
=10V
VGS(TH) CONDITIONS: 10 =250~, VOS =VGS
/
ROS{ONI/
/
o
..........
"
"~['......
~
1.8
~
a:
1.6
:::;
10.,_
100.,
r-.
!il
1m, I-
~
~
~
"
"
1.4
1.2
0.8
lOOms
en
o
0.6
a:
DC
0.4
- --
r---
1.0
c:.z
o
"
,/'
f-.
...... . /
,V
z
10m1_
IRF343~
.......
V
V
t---.
~~
-
0.2
IRF34i--'l
6 8 10
20
40 60 80100
200
Vos. DRAIN-SOURCE VOL TAGE (VOL TSI
-
o
400 600 1000
-40
o
40
80
120
160
T J, JUNCTION TEMPERATURE (OC)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
156
IRF350,351
D86FQ2,Q1
~D~[P~
15AMPERE5
400, 350 VOLT5
R05(ON) =0.3 il
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.47)
l- MAX . ..J~'35B(9'09) MAX
I=- DIA . .=l
.065(1.85)
MAX.
Features
*~
L_
0.043(1.09) DIA --.I
0.038(0.97)'
.'li
• Polysilicon gate - Improved stability and reliability
SEATING PLANE
.426(10.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
~~~~RTE~M6E
=:::!t::~,
t.JiJJ,L+----'POINT
..
• Low input capacitance - Reduced drive requirement
.20(5.00)
SOURCE
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @Tc = 25°C
@Tc = 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
0.162(4.09)
0.15(3.84)
2 HOLES
DIA.
0.440(11.18)
0.420(10.67)
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRF350/086FQ2
400
400
15
IRF351/D86FQ1
350
350
15
9
9
60
±20
150
1.2
60
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
-55 to 150
-55 to 150
°C
ROJC
ROJA
0.83
30
0.83
30
°CIW
°CIW
TL
260
260
°C
10
10M
VGS
Po
TJ, TSTG .
thermal characteristics
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
..
(1) Repetitive Rating: Pulse width limited by max. Junction temperature.
157
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
250
1000
pA
±100
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
I RF350/DB6FQ2
IRF351/DB6FQ1
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, TC =25°C)
(VOS =Max Rating, x O.B, VGS =OV, TC =125°C)
1055
Gate-Source Leakage Current
(VGS =±20V)
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
15
-
-
A
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =BA)
ROS(ON)
-
0.26
0.30
Ohms
gfs
5.6
B.O
-
mhos
-
2BOO
3000
pF
300
600
pF
60
200
pF
-
20
-
ns
110
-
ns
70
-
ns
15
A
60
A
Volts
Forward Transconductance
(VOS =10V, 10 =BA)
dynamic characteristics
=OV
Ciss
Output Capacitance
VOS =25V
Coss
Reverse Transfer Capacitance
f =1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS =175V
td(on)
Rise Time
10 =BA, VGS =15V
tr
Turn-off Delay Time
RGEN =500, RGS =12.50
td(off)
Fall Time
tf
(RGS (EQUIV.) =100)
source-drain diode ratings and characteristics*
Input Capacitance
VGS
25
ns
15
-
Pulsed Source Current
15M
-
-
Diode Forward Voltage
(TC = 25°C, VGS =OV, 15 = 15A)
VSO
-
1.0
1.6
trr
QRR
-
500
6.5
-
Continuous Source Current
Reverse Recovery Time
(15 = 15A, dls/dt = 100Alpsec, Tc
=125°C)
-
ns
pC
·Pulse Test: Pulse Width :s 300 p.s. duty cycle :s 2%
2.4
100
BO
60
40
r-,../
w
IX
w
~
!zw
IX
!5
C)
..... 1-"
\.
'\
in 20
./
\
10
:
..........
........
./
:-.,. .......... r-,.
..........
r-,.
2.2
1'...1'...
r-.~
'r-.
.... ~
10.,lOOi'
..........
, "
lm,'--
........
./ 1\
4
\
2
z
Ci
f--
0.1
1
~
..........
.........
\
1.0
~ O.B I- OPERATION IN THIS AREA
C 0.6 I-MAY BE LIMITED BY ROSIONI
- 0.4
0.2
.......
SIN~LE
PU~SE
Tc =250C
I 1
4
..........
c
~
:;
~I':-...
1.2
"
1.0
Z
~ O.B
z
o
~
........
DC
IRF351/D86FOI
a:
0.6
0.4
~
- ---
./'
r--- r-V
./'
./1-'
r---
V
V
./
V
/'
ROSION)
,/
--
~G~ -
0.2
IIR7i/D86FOj ~
6 B 10
20
40 60 80 100
200
Vas' DRAIN-SOURCE VOLTAGE IVOL TS)
./
/l
1.8
~
~
100~'
.......
CONciITION~:
I
I
I
I
I
RoS(ON) CONDITIONS: 10 = B.O A, VGS = 10V
2.0 i - - VGS(TH) CONDITIONS: 10 = 250.A, VOS = VGS
~ 1.6
a:
~ 1.4
%
10m!
r--
o
400 600 1000
-40
o
40
80
120
160
TJ , JUNCTION TEMPERATURE I'C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSION) AND VGSITH) VS. TEMP.
15B
~o~~
IRF352,353
13 AMPERES
400, 350 VOLTS
ROS(ON) =0.4 n
.FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.47)
l.. MAX . .-I~.358(9.09) MAX
I=- DIA. :l
.065(1.65)
MAX.
Features
*~
0.04311.09)
0.038(0.97)
• Polysilicon gate - Improved stability and reliability
DIA
"
--1\-
SEATING PLANE
.426(10.82) MIN.
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
~~~~R~~c"E
POINT
• Low input capacitance - Reduced drive requirement
SOURCE
• Excellent thermal stability - Ease of paralleling
maximum ratings (T c = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current@Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
-'--1r+t-f- ""'H--L..
'u,
.20(5.00)
0.162(4.09)
0.15(3.84)
2 HOLES
DIA.
0.440111.18)
0.420(10.67)
(unless otherwise specified)
IRF352
400
400
13
8
52
±20
150
1.2
IRF353
350
350
13
8
52
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
0.83
30
0.83
30
°C/W
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal ReSistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
159
=25° C) (unless otherwise specified)
electrical characteristics (T c
. CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVDSS
400
350
-.
-
MAX
UNIT
-
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF352
IRF353
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, TC = 125°C)
losS
-
-
250
1000
pA
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
13
-
-
A
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p,A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = SA)
ROS(ON)
-
0.35
0.40
Ohms
gfs
5.6
S.O
-
mhos
-
2SOO
3000
pF
300
600
pF
-
60
200
pF
td(on)
-
20
tr
td(off)
-
-
ns
25
110
-
ns
tf
-
70
-
ns
-
-
13
A
52
A
0.9
1.5
Volts
-
500
6.5
-
ns
pC
Forward Transconductance
(VOS = 10V, 10 = SA)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 175V
Rise Time
10 = SA, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 13A)
VSO
Reverse Recovery Time
(Is = 15A, dls/dt = 100Alpsec, Tc = 125°C)
trr
ORR
'Pulse Test: Pulse width:::; 300 IJS, duty cycle:::; 2%
~
100
2.4
80
60
40
2.2
l
20
,-
II:
~
!....
zw
10
~
""
' .....
"
"""
",/
2
1\
\
0.2
...........
.......
"
"
r-......
~
2.0
c
......
........
1
1.6
II:
I
........
10mr
~
%
~
100~'
1.2
~
"
0.6
II:
DC -
0.4
I
I
I
I
=
=
- r---
z
~ 0.8
I
I
./
CONDITIONS:
ROS(ON) CONDITIONS: 10 8.0 A. VGS 10V
VGS(TH) CONDITIONS: 10 250I'A. Vos VGS
/"]
=
=
./
1.4
2
IRF3S3~
c-----
co·
~ 1.0
-
...-V
/
........
""
r--
~
./
./
./
V
/-
ROSIONI
V
~G~ -
IRF3S2---i1
0.2
I
4
~
lm,'-
o
SIN~LE PU~SE
I'
1.8
:::;
T =2SoC
0.1
~
10.!
100.,
........
~i'-.......
;;: 1.0
OPERATION IN THIS AREA
~ 0.8 0 0 .6 -MAY BE LIMITED BY ROSIONI
- 0.4
_
"
.......
.............
...........
4
II:
~
u
z
./
,,"'"
I
f----
6 8 10
20
40
60 80100
200
o
400 600 1000
V DS ' DRAIN-SOURCE VOLTAGE (VOLTSI
-40
o
40
80
120
160
T J. JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND
160
VGSITHI VS.
TEMP.
IRF430,431
D86DR2,R1
~D~[P~U
4.SAMPERES
SOO, 4S0 VOLTS
ROS(ON) = 1.S!l
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
T -u--u=
0.845121.47)
MAX
Features
• Polysilicon gate -
0.043(1.09)
0.03810.97)
Improved stability and reliability
• No secondary breakdown • Ultra-fast switching • Voltage controlled -
:1~.35819.09) MAX
0~~X65l~
DIA --'
.,
I-
SEATING PLANE
.
.426(10.82) MIN.
Excellent ruggedness
Independent of temperature
High transconductance
• Low input capacitance -
~~~~Rr:N~E
...L...:j4+-~-'""~----'L..
POINT
Reduced drive requirement
• Excellent thermal stability -
.2015.00)
SOURCE
Ease of paralleling
0.16214.09)
0.1513.84)
2 HOLES
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current@Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation@Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
DIA.
0.440111.18)
0.420(10.67)
(unless otherwise specified)
IRF430/0860R2
500
500
4.5
3.0
18
±20
75
0.6
IRF431/0860R1
450
450
4.5
3.0
18
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
30
1.67
30
°CIW
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
161
electrical characteristics (T c
I
=25
C)
0
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
500
450
-
-
Volts
-
250
1000
jJA
±100
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 jJA)
IRF430/D86DR2
IRF4311D86DR1
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loss
-
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
4.5
-
-
A
ROS(ON)
-
1.3
1.5
Ohms
gfs
1.75
2.2
-
mhos
Ciss
-
650 '
800
pF
90
200
pF
15
60
pF
-
15
-
ns
-
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(V OS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS =10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 2.5A)
Forward Transconductance
(VOS = 10V, 10 =2.5A)
dynamic characteristics
Output Capacitance
=OV
VOS =25V
Reverse Transfer Capacitance
f = 1 MHz
Input Capacitance
VGS
Coss
C rss
switching characteristics*
=225V
Turn-on Delay Time
VOS
Rise Time
10 = 2.5A, VGS
td(on)
tr
='15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(off)
tf
10
40
25
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 4.5A)
VSO
Reverse Recovery Time
(Is = 4.5A, dls/dt = 100AljJsec, Tc = 125°C)
trr
ORR
-
-
4.5
A
18
A
1.0
1.4
Volts
-
460
4.5
-
ns
JJC
-
'Pulse Test: Pulse width :5 300 ps, duty cycle :5 2%
100
2.4
/',
BO
60
40
2,2
2.0
en
w
20
i' ~ /'
a:
~
!
I-
10
~
iii
4
§
2
<
:5
1.0
O.B
C 0.6
-
"
"",r'
\
,/
"
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSION)
10'"
I I
0.4
I'-.
.........
.........
..........
" "'-
"~~
0;2
I
..........
1
'"
IRF43110B60R~
6
8 10
20
40
60 BO 100
VOS' DRAIN -SOURCE VOLTAGE (VOL TSI
1.6
1.4
1
+-:
200
-
=
=
-
J,
>"
./
1.0
O.B
Z
~ 0,6
Q
1
a:
ants
-/'
.....
c
~
=
=
/'
./
/' VROSION)
~ 1.2
lOms
IRF430/0B60R2 --i
4
~
:5
z
lpO"1"
.......... ..........
0.1
1
1O,us
.......
SIr,GLE PULjE
Tc=2SoC
l.B
:;;
.......
.......
:n
N
.......
..........
a:
"z
r-.... . . . . .
i'..
CONOITIONS:
ROS(ON) CONOITIONS: 10 2.5 A, VGS 10V
VGS(TH) CONOITIONS: 10 250~A, VOS VGS
1-
..--V
---./
..."
V
V
~~
0.4
-
0.2
C
-40
400 600 1000
0
40
BO
120
160
T J • JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
162
~D~[P[gU
IRF432,433
FIELD EFFECT POWER TRANSISTOR
4.0 AMPERES
500, 450 VOLTS
ROS(ON) = 2.0 0
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.47)
I- MAX . ..J~'358(9'09) MAX
DIA.
.065(1.65)
MAX . .l~
.::l
1::.
.
Features
T ----u--rr=
0.043(1.09)
0.038(0.97)
• Polysilicon gate - Improved stability and reliability
DIA....J
"
f-
SEATING PLANE
.426(10.82) MIN.
" No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
~~~;R~~~E
-'--14t-~-"""!JJ+---'POINT
• Low input capacitance - Reduced drive requirement
.20(5.00)
SOURCE
• Excellent thermal stability - Ease of paralleling
maximum ratings (T c = 25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
Continuous Drain Current @ Tc = 25°C
@Tc = 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
0.162(4.09)
0.15(3.84)
2 HOLES
DIA.
0.440(11.18)
0.420(10.67)
(unless otherwise specified)
IRF432
500
500
4.0
2.5
16
±20
75
0.6
IRF433
450
450.
4.0
2.5
16
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
30
1.67
30
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
163
°C/W
electrical characteristics (TC =25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
500
450
-
-
Volts
-
-
250
1000
pA
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
4.0
-
-
A
ROS(ON)
-
1.5
2.0
Ohms
2.2
-
mhos
-
650
800
pF
90
200
pF
-
15
60
pF
-
15
ns
40
-
25
-
-
4.0
A
16
A
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF432
IRF433
Zero Gate Voltage Drain Current
(V OS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loSS
Gate-Source Leakage Current
(VGS= ±20V)
IGSS
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 2.5A)
Forwa'rd Transconductance
(VOS = 10V, 10 = 2.5A)
1.75
9fs
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
f= 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switch i ng characteristics *
Turn-on Delay Time
VOS = 225V
Rise Time
10 = 2.5A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
10
ns
ns
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
-
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 4.0A)
VSO
-
1.0
1.3
Volts
Reverse Recovery Time
(Is = 4.5A, dls/dt = 100Alpsec, Tc = 125°C)
trr
ORR
-
460
4.5
-
ns
pC
Continuous Source Current
'Pulse Test: Pulse Width
Is
::s 300 ps, duty cycle ::s 2%
100
80
60
40
2.4
20
a:
~
::;;
~
...Z
w
r-..
..\
10
B
6
4
!5
LY'
Z
<1
1.0
~ 0.8
Q 0.6
- 0.4
>"'
......
"
/'
2
"L-
Si~G~;;'~LSE
c, ,
0.1
1
4
i'..'i'..
Ii'...
..........
"'
.........
" ~, ~ "
....... .......
~
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 2.5 A, vGS = 10V
VGS HI CONDITIONS: 10 = 250pA, VDS = VGS
-
1.8
N
.......
~ Ii'... i'
OPERATION IN THIS AREA
-MAY BE LIMITED BY RDSIONI
0.2
~
~'
i'...
~r
a:
~
1.0
o
Ills
~
.......
:--...
~
~
0.8
2'
~ 0.6
110~S
c
a:
I I
0.4
lOOms
0.2
I
/
./
-
........
-..-
r-- / '
/""
. /V
-
I"
t---
~T:;- ....
C
o
400 600 1000
-40
40
80
120
160
T J , JUNCTION TEMPERATURE I'CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS, TEMP.
164
IRF440,441
D86ER2,R1
~D~I?~
SAMPERES
500, 450 VOLTS
ROS(ON) = 0.S5 il
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r t-f
0.645(21.47)
MAX.
-~·~~--=t,~"oo,~,
Features
0.043(1.09)
0.036(0.97)
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown • Ultra-fast switching -
.356(9.09) MAX
DIA
.
-11I
.426(10.62) MIN.
Excellent ruggedness
Independent of temperature
• Voltage controlled - High transconductance
~~~~RTE~~E ...L...'Jf-++--f- ""I-+---L.
POINT
.20(5.00)
SOURCE
• Low input capacitance - Reduced drive requirement
'"
o
z
}001.
I
0.B
~
O. 6,...-
a:
I
C
r---
1.0
,.
<0:
ROSION)
./""
;:
I,
.........
I-
I
o
.......
I'-.
I
I-
-'
-
./
I--- . /
V
,/
,/
r--
~~ r-----
O. 4
O. 2
o
6 B 10
20
40 60 BO 100
200· 400 600 1000
VDS' DRAIN -SOURCE VOL TAGE (VOL TSI
-40
o
40
BO
120
160
T J • JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
170
~D~~lJ
IRF452,453
12 AMPERES
500, 450 VOLTS
ROS(ON) = 0.5 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
0.845121.47)
MAX. H·35819.09) MAX
oo,;:,~*~_=r~"oo .,,'
Features
• Polysilicon gate -
0.04311.091
0.03610.97)
Improved stability and reliability
DIA
--1 '-_
'11
.426110.82) MIN.
• No secondary breakdown - Exce"ent ruggedness
• Ultra-fast switching • Voltage controlled -
Independent of temperature
High transconductance
~~~~RTE~~
-'-iH+--t(olH'--"-
POINT
• Low input capacitance - Reduced drive requirement
.2015.00)
SOURCE
• Exce"ent thermal stability - Ease of para"eling
0.16214.091
0.1513.84)
2 HOLES
maximum ratings (T C = 25°C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @TC = 25°C
@TC = 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° e
Operating and Storage
Junction Temperature Range
DIA.
0.440111.16)
0.420(10.67)
(unless otherwise specified)
IRF452
500
500
12
7
48
±20
150
1.2
IRF453
450
450
12
7
48
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°e
ReJC
ReJA
0.83
30
0.83
30
°C/W
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
w/oe
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
171
electrical characteristics (Tc
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
500
450
-
-
Volts
-
250
1000
p.A
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
. 4.0
Volts
10(ON)
12
-
-
A
ROS(ON)
-
0.4
0.5
Ohms
gfs
4.8
7.0
-
mhos
-
2800
3000
pF
330
600
pF
55
200
pF
-
25
-
ns
20
ns
-
120
-
65
-
-
-
12
A
-
48
A
0.9
1.3
Volts
590
7.4
-
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 p.A)
IRF452
IRF453
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(V OS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =7A)
Forward Transconductance
(VOS =10V, 10'; 7A)
dynamic characteristics
=OV
Ciss
Output Capacitance
VOS =25V
Coss
Reverse Transfer Capacitance
f =1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS =225V
td(on)
Rise Time
10 =7A, VGS =15V
tr
Turn-off Delay Time
RGEN =500, RGS =12.50
td(off)
Fall Time
tf
(RGS (EQUIV.) =100)
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is
Reverse Recovery Time
(Is =13A, dls/dt =100A/p.sec, Tc
-
VSO
=12A)
trr
=125°C)
ORR
ns
ns
ns
p.C
'Pulse Test: Pulse width:::; 300 f-lS, duty cycle:::; 2%
2.4
100
80
60
40
f3
a:
w
k"'-
l
20
",-
\
10
i :
~
a:
!5u
-"
""", 1\
2
\
«
1.0
is 0.8 Q 0.6 -
-
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
I', " ~
'"
"
4
z
"-
......
......
~
" ,"-
"-
.........
"-
0.4
_ SING'LE PULJE
0.2
T =2S"C
c1
0.1
1
I
4
'"
"- "IRF4S3~
o
~
lOllS
::;
~
a:
TOOps
+
l!ms._
!il
'"
1.0
z
o
~ 0.6
ROSIONI
/'
r---
t--
"""
r-
0.4
V
/"
./'"
~~ r--
0.2
IRF4j2--;
6 B 10
20
40 60 80100
200
Vas. DRAIN-SOURCE VOLTAGE (VOL TSI
/
- ------
1.4
1.2
a:
V
./
./
-:.. 0.8
I
I
I
/
Z
Db
I
1.6
~
~
I
I
1.B
;:
II
100ms
I
1--1
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 7.0 A. VGS = 10V
2.0 t - - VGS(TH) CONDITIONS: 10 = 250pA. VOS = VGS
2.2
o
400 600 1000
-40
0
40
80
120
160
T J' JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
172
IRF510 9511
D84BL2,K2
~D~[F[g1F
FIELD EFFECT POVVER TRANSISTOR
The IRF510, 511 Series is an N-Channel Enhancement-mode
Power MOSFET utilizing GE's advanced Power DMOS technology to achieve low on-resistance with excellent device
ruggedness and reliability.
4.0 AMPERES
100, 60 VOLTS
ROS(ON) =0.6 0
N-CHANNEL
The IRF510, 511 design has been optimized to give superior
performance in most switching applications including:
switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with
good linear transfer characteristics makes it well suited for
many linear applications such as audio amplifiers and servo
motors.
DIMENSIDNS ARE IN INCHES AND (MILLIMETERS)
.404(10.26)
.380(9.65)
Features
I
+
TERM.l
.0331~.841
.02710.691
---:I59)
~51
.001(0.0251
.500(12.7)MIN.
.05511.39)
.04511. 14)
.11hJ--.l0512.67)
~ •. 095(2.41)
1--'
I--
.21015.331
.19014.821
~
.10712.721
.08712.21)
.021(0.53)
.01510.38)
(unless otherwise specified)
SYMBOL
Voss
VOGR
Operating and Storage
Junction Temperature Range
-IT "~III"';-;--,
.055(1.391-/
.04511.141
• Excellent thermal stability - Ease of paralleling
=25°C
.35519.02),/" POINT
TERM.3
• Low input capacitance - Reduced drive requirement
Total Power Dissipation @Tc
Derate Above 25° C
CASE
TEMPERATURE
REFERENCE
~
I
TERM.2
• Voltage controlled - High transconductance
Gate-Source Voltage
•
~"'-'
• Ultra-fast switching - Independent of temperature
= 25° C
=100°C
.--.
.32518.25)
• No secondary breakdown - Excellent ruggedness
Continuous Drain Current @ T C
@Tc
Pulsed Drain Current(1)
:i~g\!:~~\rt
.055(1.39)
I
.048(1.221
.'---+--I-------+tT-j---'-1
:i:~I~:~~IDIA.
• Polysilicon gate - Improved stability and reliability
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
.11612.951
91
.265(6.73)
.245(6.22:
/
maximum ratings (T C =25° C)
112.7
10
IRF510/084BL2
100
100
4.0
2.5
IRF511/084BK2
60
60
4.0
2.5
UNITS
Volts
Volts
A
A
10M
16
16
A
VGS
±20
±20
Volts
Po
20
0.16
20
0.16
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
6.4
6.4
°C/W
ROJA
80
80
°C/W
h
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive
R~ting:
Pulse width limited by max. junction temperature.
173
electrical characteristics (Tc
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
100
60
-
-
Volts
-
250
1000
JlA
IGSS
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
On-State Drain Current
(VGS = 10V, VOS = 10V)
VOS(ON)
4.0
-
-
Volts
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 2A)
ROS(ON)
-
-
0.6
Ohms
gfs
.8
1.1
-
mhos
VGS= OV
Ciss
-
145
200
pF
Output Capacitance
VOS = 25V
65
100
pF
f = 1 MHz
Coss
C rss
-
Reverse Transfer Capacitance
-
20
25
pF
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF510/D84BL2
IRF5111D84BK2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
losS
Gate-Source Leakage Current
(VGS = ±20V)
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 mA)
Tc = 25°C
Forward Transconductance
(10 = 2A)
dynamic characteristics
Input Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 30V
15
-
ns
10 = 1.5A, VGS = 15V
tci(on)
tr
-
Rise Time
-
15
ns
Turn-off Delay Time
RGEN = 500, RGS = 12.50
td(off)
-
30
Fall Time
(RGS (EQUIV.)
tf
-
10
-
-
-
4.0
A
16
A
1.3
2.5
Volts
100
.3
-
=100)
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS =OV, Is = 4A)
VSO
Reverse Recovery Time
(Is = 4A, dis/dt = 100Alps, VOS
-
trr
=40V max., Tc = 125°C)
-
ORR
ns
pC
'Pulse Test: Pulse width $ 300 ps, duty cycle $ 2%
100
80
60
40
ffi
2.4
2.2
20
a:
~
10
Ii;
w
4
g;
2
~ ~
\
"
,,~
a:
'"
";;:z
1.0
~ 0.8
i:o 0.6
-
"-"
0.4
i-
/'
r-.-..
.......
101.15
"-
OPERATION IN THIS AREA
. MAY 8E LIMITED BY ROSIONI
0.2 I- SINGLE PULSE
Tc""2SoC
.... 1m,
'"'" ~I'
"
~~
~
I
1.8
~
1.6
!i
1.4
./
./
IRF511.=
IRF510
f=
~
1.2
>'"
o
z
1.0
- r--.... -,.,....,.. "
~ O.B
z
1~ 0.6
10ms
a:
100m,
DC
0.4
--
.."
--
,
ROSIONI
/"
a:
r.....
~~
1\
ICONDI~IONS: I
ROSION) CONDITIONS: 10" 2.0A. VGS" 10V
2.0 I - - - V
GSITH ) CONDITIONS: 10" 1 MA. VOS" VGS
~
::;
100",
........
~ ~~
o
I
-
V
~
r--
VGSITHI-
----
0.2
4
6 8 10
20
40 60 80 100
200
Vos. DRAIN-SOURCE VOLTAGE (VOL TSI
400 600 1000
o
MAXIMUM SAFE OPERATING AREA
-40
a
40
80
TJ.JUNCTION TEMPERATURE I'C)
174
120
160
~o~~u
IRF512,513
FIELD EFFECT POWER TRANSISTOR
The IRF512, 513 Series is an N-Channel Enhancement-mode
Power MOSFET utilizing GE's advanced Power DMOS technology to achieve low on-resistance with excellent device
ruggedness and reliability.
3.5 AMPERES
100, 60 VOLTS
ROS(ON) = 0.8 n
N-CHANNEL
The IRF512, 513 design has been optimized to give superior
performance in most switching applications including:
switching power supplies, inverters, converters and sole- .
noid/relay drivers. Also, the extended safe operating area with
good linear transfer characteristics makes it well suited for
many linear applications such as audio amplifiers and servo
motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
40411026) .11612.951
.. 38019.651112.791
.\~\:.~~
.05511.391
.
.
I
.048(1.22)
-.--.
.26516.731
.245(6.221
Features
:~:~:~:~~IDIA.
• Polysilicon gate - Improved stability and reliability
+
rt·
.355(9.021
325 (8.251
130(331
TERM.l
TERM.2
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
~591
.500(12.7IMIN.
TERM.3 .
.0331~.841
.02710.691
• Low input capacitance - Reduced drive requirement
.05511.39)
.045(1.14)
• Excellent thermal stability - Ease of paralleling
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
CASE
TEMPERATURE
REFERENCE
OINT
.006(0.151
.00110.0261
~.
• No secondary breakdown - Excellent ruggedness
maximum ratings (T C = 25° C)
•
/f--+--+----Jfr-r-'-11S
.107(2.721
.087(2.211
.lhr.l0512.671
~ "009512.411
---l I+1+-.
.21015.33)
.19014.82)
.•0021511100..5336)1
(unless otherwise specified)
SYMBOL
VOSS
VOGR
IRF512
100
100
IRF513
60
60
UNITS
Volts
Volts
A
A
Continuous Drain Current @ Tc = 25 DC
@Tc= 100DC
Pulsed Drain Current(l)
10
3.5
2.0
3.5
2.0
10M
14
14
A
Gate-Source Voltage
VGS
±20
±20
Volts
Po
20
0.16
20
0.16
W/DC
TJ, TSTG
-55 to 150
-55 to 150
DC
Thermal Resistance, Junction to Case
R8JC
6.4
6.4
°C/W
Thermal Resistance, Junction to Ambient
R8JA
80
80
°C/W
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
TL
260
260
°C
Total Power Dissipation @Tc = 25 DC
Derate Above 25 DC
Operating and Storage
Junction Temperature Range
Watts
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
175
electrical characteristics (T c
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
-
Volts
-
-
250
1000
pA
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
On-State Drain Current
(VGS =10V, VOS =10V)
VOS(ON)
3.5
-
-
A
Static Drain-Source On-State Resistance
(VGS =10V, 10 =2A)
ROS(ON)
-
0.6
0.8
Ohms
gfs
.8
1.1
-
mhos
-
145
200
pF
65
100
pF
-
20
25
pF
-
15
-
ns
CHARACTERISTIC
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRF512
IRF513
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
,(VOS =VGS, 10 =250 mAl
Tc
=25°C
Forward Transconductance
(10 =1.5A)
dynamic characteristics
=OV
Ciss
Output Capacitance
VOS =25V
Coss
C rss
Reverse Transfer Capacitance
f =1 MHz
switching characteristics*
Turn-on Delay Time
VOS =30V
td(on)
Rise Time
10 =2A, VGS =15V
tr
Turn-off Delay Time
RGEN =500, RGS =12.50
td(off)
Fall Time
(RGS (EQUIV.) =100)
tf
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Continuous Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =3.5A)
Reverse Recovery Time
(Is =4A, dis/dt = 100A/ps, VOS = 40V max., Tc = 125°C)
-
ns
ns
10
-
ns
-
3.5
A
ISM
-
-
14
A
VSO
-
1.1
2.0
Volts
trr
-
100
.3
-
ns
pC
Is
Pulsed Source Current
15
30
-
ORR
'Pulse Test: Pulse width::; 300 ps, duty cycle::; 2%
100
BO
60
40
2.4
2.2
2.0
ffi
~
ffi
10
:
......
~
4
!5u
2
".
z
;;:
~
Q
-
1.0
".
1\
~
~~
"
"
0.8
0,6
0.4
0.2
.......
I-
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
:::;
~
a:
~
100.,
..........
,,~
~
10JJs
~
i'o...
r. . . .
/'
II:
~
r- SINGLE PULSE
~
~
"
~
.... 1m,
-
IRF51~'=
IRF512,_
.~
a:
lOms
lOOms
DC
1
4
6
8 10
20
40
60 BO 100
200
/'"
./
1.6
1.4
1.2
-r---
1.0
-:.. O,B
z
o
I
VGSITHl CONDITIONS: 10 ' 1 MA, VOS' VGS
z
f::r-
ICONDI~IONS: I
ROSIONI CONDITIONS: 10'2.0A, VGs '10V
1.8
:;:
0.6
1 -~
~
"-
"V
. /V
ROSIONl
./
V
r-- r--
r-- I-....
VGSITHl-
0.4
-
0.2
Tc ::25°C
01
r-
c
.
......
II:
~
,
20
1
r-
400 600 1000
-40
VOS' DRAIN-SOURCE VOLTAGE (VOL TSI
40
80
120
160
T J , JUNCTION TEMPERATURE (OC)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
176
IRF520,521
D84CL2,K2
~D~[P~U
8 AMPERES
100, 60 VOLTS
RDS(ON) =0.3 .0.
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:~~g\!:~~\ffi
.055(1.39)
I
.04B(I.22)
,..-- .
•26S{6.73)
.245(6.22)
_
/I--+--+----lfl--r--..,'
Features
• Polysilicon gate - Improved stability and reliability
+
.'1144S,I{33.• 65BB))DlA.
• No secondary breakd.own - Excellent ruggedness
:~~~I~:~~:---'
.220{S.59)
~
130(33)
~.
• Ultra-fast switching - Independent of temperature
TERM.l
• Voltage controlled - High transconductance
-!f;"HIII4lr+-.
TEAM.2
• Low input capacitance - Reduced drive requirement
0
C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M.o.
Continuous Drain Current@ TC = 25°C
@TC= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
~S)
.001(0.02SI
.S00{12. 7)M IN.
.0SS{1.39
.04S{1.14
.033(~.B4)
.027{0.691
.1~.'0S{2.67)
.09S{2.411
.055{1.39)
.1
.045{1.14)--'
=25
.
TEAM.3
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C
CASE
TEMPERATURE
REFERENCE
/
POINT
\+-'
I---
.210(S.33)
.190{4.B2)
.107{2.72)
.087(2.211
.021{0.53)
.015(0.3B)
(unless otherwise specified)
IRF520/D84CL2
100
100
8
5
32
±20
40
0.32
IRF521/D84CK2
60
60
8
5
32
±20
40
0.32
UNITS
Volts
Volts
'A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
3.12
80
3.12
80
°CIW
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
.. ,
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
177
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
250
1000
pA
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
8.0
-
-
A
ROS(ON)
-
0.23
0.3
Ohms
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
I RF520/D84CL2
I RF521 ID84CK2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Te = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Te = 125°C)
losS
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Te = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 4A)
Forward Transconductance
(VOS = 10V, 10 = 4A)
9fs
1.2
2.2
-
mhos
Ciss
-
410
600
pF
160
400
pF
40
100
pF
15
-
ns
30
-
ns
dynamic characteristics
Input Capacitance
Output Capacitance
VGS
=10V
VOS
=25V
Coss
C rss
=1 MHz
switching characteristics*
Reverse Transfer Capacitance
f
Turn-on Delay Time
VOS = 30V
Rise Time
10 = 4A, VGS
Turn-off Delay Time
-
td(on)
=15V
tr
RGEN = 500, RGS = 12.50
td(off)
tf
=100)
source-drain diode ratings and characteristics*
Fall Time
(RGS (EQUIV.)
-
25
10
ns
ns
IS
-
-
8
A
Pulsed Source Current
ISM
-
-
32
A
Diode Forward Voltage
(Te = 25°C, VGS = OV, Is = 8A)
VSO
-
1.0
2.5
Volts
trr
-
100
0.9
-
pC
Continuous Source Current
Reverse Recovery Time
(Is = 8A, dls/dt = 100Alpsec, Te = 125°C)
ORR
ns
'Pulse Test: Pulse width:::; 300 ps, duty cycle:::; 2%
2,4
100
80
60
40
en
w
2,2
'10-
20
a:
~
~ ~
m 4V
a:
!§
u
"
~
10
2
/'
fi
_0
"-
,
10-
2,0
\
1.0
0,8 I- OPERATION IN THIS AREA
"
0, 1
~
1.8
~
a:
1.6
::;
100/-15
~
i
i'
1m,
I~ ~
PUL~E
I
101-15
.......
0 ,6 r--MAY 8E LIMITED 8Y ROSIONI
0.4
IRF5211D84CK2- ~
SINdLE
IRF520/D84CL2
0,2
T ·25·C
r-
r-
I
I
I
I
I
ROS(ON) CONDITIONS: 10 =4,0 A. VGS =lOV
VGS(TH) CONDITIONS: 10 =250pA. VOS =VGS
c
!"S ~
1\
2
;;:
~
"'-
ciONDI~IONS:
I-
ROS(Oo/
1.4
Si
1.2
~"
1.0
2
~ 0,8
z
lOms
lOOms
~
DC
0,6
a:
-
- ---
,/""
....V
r--
~
V
r-- r--
-.::~ -
0.4
0,2
I
4
6
8 10
20
40
60 80100
200
400 600 1000
40
VOS' DRAIN-SOURCE VOL TAGE (VOLTS)
o
40
60
120
T J • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
178
160
~[R1D~[F~u
IRF522,523
FIELD EFFECT POWER TRANSISTOR
7 AMPERES
100,60 VOLTS
ROS(ON) =0.4 n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
:1~g\!·~~\rl·05511.391
.
I
.04811.221
.--
.26516.731
.24516.221
Features
/
.35519.021
.32518.251
• Ultra-fast switching - Independent of temperature
TERM.1
• Voltage.controlled - High transconductance
.1f'..~IIIIoo!H--,
POINT
-,-
.22015.591
-.-i.
.00610.15}
.001l0.025}
.500112.7}MIN.
TERM.2
TERM.3
• Low input capacitance - Reduced drive requirement
.0331~.84}
• Excellent thermal stability - Ease of paralleling
.02710.69}
.055 1.39
.04511.14
Gate-Source Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
!
,~."
• No secondary breakdown - Excellent ruggedness
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @Tc = 25°C
@TC = 100°C
Pulsed Drain Current(l)
CASE
•
I--+--+----Ifr--r-., TEMPERATURE
REFERENCE
• Polysilicon gate - Improved stability and reliability
maximum ratings (T C =25°C)
.
.10712.721
.08712.21}
.1ll::iJ--.10512.67}
~ •. 09512.41 1
--l
\:=.
.21015.33}
.19014.82}
(unless otherwise specified)
IRF522
100
100
7
4
28
±20
40
0.32
IRF523
60
60
7
4
28
±20
40
0.32
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
3.12
80
3.12
80
°C/W
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1,4" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
179
electrical characteristics (T c
=25° C) (unless otherwise specified)
CHARACTERISTIC
I
TYP'
MAX
UNIT
100
60
-
-
Volts
-
250
1000
pA
IGSS
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
7.0
-
-
A
ROS(ON)
-
0.3
0.4
Ohms
9fs
1.2
2.2
-
mhos
Ciss
-
410
600
pF
160
400
pF
40
100
pF
-
15
ns
10
-
1 SYMBOL 1
MIN
BVDSS
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRF522
IRF523
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Tc = 25°C
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
On-State Drain Current
(VGS = 10V, VOS =·10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 4A)
Forward Transconductance
(VOS = 10V, 10 = 4A)
dynamic characteristics
=10V
Input Capacitance
VGS
Output Capacitance
VOS =25V
f = 1 MHz
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 30V
td(on)
Rise Time
10 = 4.0A, VGS = 15V
Turn-off Delay Time
RGEN = 50n, RGS = 12.5n
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
30
25
ns
ns
ns
source-drain diode ratings and characteristics*
Is
-
-
7
A
Pulsed Source Current
ISM
28
A
VSO
-
-
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 7A)
1.0
2.3
Volts
-
100
.0.9
-
ns
pC
Continuous Source Current
Reverse Recovery Time
(Is = 8A, dls/dt = 100Alpsec, Tc = 125°C)
trr
ORR
'Pulse Test: Pulse width :5 300 Ils, duty cycle :5 2%
2.4
100
80
60
40
ffi
20
a::
~
~...
10
:
2w
4
~
2
a::
u
2.2
........
g;
C
-
........
I-0.6 I - 0.8
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
0.4
I-- SIN~LE PU~SE
0.2
TC " 25°C
i
0.1
1
I
4
I'-
10.,
~
1.8
100.,
~
a::
1.6
:::;
II
........
~~
~ ::::-..
\
1.0
r-- VGS(TH) CONDITIONS: 10 =250pA, VOS = VGS
o
"-
0.-
2
;;:
,,-
'"
"'"
v,... 1\
~
\.
2.0
.........
CONDITIONS:
r-- ROS(ON) CONDITIONS: 10 =4.0 A, VGS = lOV
;:
1'-1m,
ROSIOY
1.4
~
1.2
"
1.0
~
2
':.. 0.8
z
10ms
lOOms
DC
~
a::
0.6
0.4
- ----
-
r---
..,V
./
V
r-- r--
-
~~ -
IIRF523+
0.2
IIRF522, H
6 8 10
20
40 60 80 100
200
Vos' DRAIN-SOURCE VOLTAGE (VOLTS)
o
400 600 1000
-40
o
40
80
120
160
T J , JUNOTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
180
IRF530,531
D84DL2,K2
~D~~
14.0 AMPERES
100, 60 VOLTS
RDS(ON) = 0.18 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS
technology to achieve low on-resistance with excellent
device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
"~~~\:"~~\ffi
.055(1.39)
I
.04811.22)
-.--
.265(6.73)
.24516.22)
Features
/
• Polysilicon gate - Improved stability and reliability
:~:~:~:~~:DlA.
• No secondary breakdown - Excellent ruggedness
~-+--i-----ItE--
+
~
I
~."'
TERM.1
• Voltage controlled - High transconductance
(f;"~III""H---,
-:I591
~151
.00110.0251
.500112.7IMIN .
TERM.3
.0331~.841
.02710.691
• Excellent thermal stability - Ease of paralleling
.055 1.39
.0451.141
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @TC = 25°C
@Tc= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
CASE
TEMPERATURE
REFERENCE
TERM.2
• Low input capacitance - Reduced drive requirement
= 25° C)
•
.355(9.021.,/' POINT
.325(8.251
• Ultra-fast switching - Independent of temperature
maximum ratings (TC
T
.
.1~.10512.671
.09512.411
---I j:::::
.10712.721
.08712.211
.21015.331
.19014.821
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRF530/D84DL2
100
100
14
IRF531/D84DK2
60
60
14
9
9
VGS
Po
56
±20
75
0.6
56
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
80
1.67
80
°CIW
°CIW
TL
260
260
°C
10
10M
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
181
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
BVDSS
100
60
-
-
-
250
1000
J1A
IGSS
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
14.0
-
-
UNIT
off characteristics
Drain";Source Breakdown Voltage
(VGS = OV, 10 = 250 J1A)
IRF530/DS4DL2
IRF531/DS4DK2
Zero Gate Voltage Drain Current
(Vos = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
-
Volts
on characteristics*
Gate Threshold Voltage
(Vos = VGS, 10 = 250 p,A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, Vos = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = SA)
-
0.15
0.1S
Ohms
gfs
3.2
4.0
-
mhos
-
650
SOO
pF
240
500
pF
55
150
pF
15
-
ns
55
30
-
ns
10
-
ns
ROS(ON)
Forward Transconductance
. (VOS = 10V, 10 = SA)
A
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
10 = SA, VGS = 15V
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.) = 100)
-
td(on)
tr
=500, RGS = 12.50
td(off)
tf
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 14A)
Reverse Recovery Time
(Is = 14A, dls/dt = 100AIJ1sec, Tc = 125°C)
Vso
trr
ORR
-
-
14
A
56
A
1.0
2.5
Volts
-
210
1.4
-
ns
J1C
'Pulse Test: Pulse width :5 300 J1S. duty cycle :5 2%
100
80
60
40
~
20
2.4
.......
I~
II:
~
2w
4
!5
2
II:
"2
"""-,. ~ <
,
.......
.......
"""'-, ~
1"-
10
...~ ~
!'...
.......
" ,"
" r......~
I
'1'0
....... 1'0
10,us
100",
. OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
I"- 1'",
1.8
~
1.6
:;
:s
~ 1.2
10ms
>'"
100m,
~
rl
I
II:
:=~;~~~g::g~~.~ --l
O. 1
4
6 8 10
20
40 60 BO 100
200
V~s. DRAIN-SOURCE VOLTAGE (VOLTS)
I
=
=
V
-- r-- ....-.-
"""-
r--..
1.0
0.8
0.6
..,,-
~ VROSIONI
C
:i!
SINGLE PULSE
Tc "2S"C
0.2
=
=
1.4
2
OC
0.4
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 8.0 A. VGS 10V
VGS(TH) CONDITIONS: 10 250pA. Vos VGS
N
1m,
r........ ~t-.
51
II
I
1
r-2.0 r-2.2
.......
1.0
:s" Q 0.6
O. 8
-
.....
.......
1-
~
~
~
~
L
l - I-VGSITHI_
r-
0.4
0.2
a
400 600 1000
-40
a
40
BO
120
160
TJ • JUNCTION TEMPERATURE ("C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RostONI AND VGStTHI VS. TEMP.
1S2
~o~[p~
IRF532,533
FIELD EFFECT POWER TRANSISTOR
12.0 AMPERES
100, 60 VOLTS
ROS(ON) = 0.25 n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:~~g\~·~;\rt
.055(1.39)
.
I
.048(1.22)
.--
. 265(6.73)
.24516.22)
Features
CASE
TEMPERATURE
REFERENCE
/
.35519.02)
.32518.25)
: ~1~l~:~~:DIA.
+"
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
TERM.l
• Voltage controlled - High transconductance
TERM.2
POINT
--,
.22015.59)
---.i..
j
.006(0.15)
.001(0.025)
.500112.7)MIN .
.05511.39)
.04511.14)
TERM.3
• Low input capacitance - Reduced drive requirement
.033(~.84)
• Excellent thermal stability - Ease of paralleling
.02710.69)
.I~.10512.67)
.055(1.39)
.1
.045(1.14)---'
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mn
Continuous Drain Current @Tc = 25°C
@Tc =100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ TC =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
•
I--+---I----+t-i--',I
• Polysilicon gate - Improved stability and reliability
maximum ratings (TC = 25°C)
.
.10712.72)
.08712.21)
~ ,.09512.41)
J.-'
I--
.21015.33)
.19014.82)
.021{0.53)
.01510.38)
(unless otherwise specified)
IRF532
100
100
12
8
48
±20
75
0.6
IRF533
60
60
12
8
48
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
1.67
80
1.67
80
°C/W
°C/W
TL
260
260
°C
SYMBOL
VOSS
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
183
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
-
250
1000
J1A
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
12
-
-
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 250 J1A)
IRF532
IRF533
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS =OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 }J.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =8A)
A
-
0.18
0.25
Ohms
gfs
3.2
4.0
-
mhos
Ciss
-
650
800
pF
240
500
pF
55
150
pF
15
ns
ROS(ON)
Forward Transconductance
(V OS =10V, 10 =8A)
dynamic characteristics
=OV
VOS = 25V
f = 1 MHz
Input Capacitance
VGS
Output Capacitance
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
=30V
=8A, VGS =15V
RGEN =50D, RGS = 12.5D
(RGS (EQUIV.) = 10D)
Turn-on Delay Time
VOS
Rise Time
10
Turn-off Delay Time
Fall Time
-
55
td(off)
-
30
tf
-
10
-
IS
-
A
ISM
-
12
-
48
A
VSO
-
1.0
2.3
Volts
trr
-
210
1.4
-
td(ori)
tr
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS =OV, Is
=12A)
Reverse Recovery Time
(Is = 14A, d Isldt = 1OOAIJ1sec, T C = 125° C)
ORR
ns
J1C
-
'Pulse Test: Pulse width::::: 300 fls, duty cycle::::: 2%
2.4
100
80
60
40
(i)
20
w
a:
~
10
~
6
:;;
~
4
::J
<.l
Z
2
a:
a:
;:( 1.0
~ 0.8
}lO.6
0.4
"
r-.....X
'\
B
f-
"" " "'"
,
.'
/I
~/
'"
........
\
f'. ....
"'-
2.0
,
r-... ....
~ 1.6
:;;
~ 1.4
"i"to 1.2
lOms
>fj 1.0
"~
100m,
DC
SINGLE PULSE
Tc"'25°C
~
<;;
0.8
0.6
o
a: 0.4
im~~:;:: H
0.2
I
I
I
./
/
N
1m'
.......
~ ........ f'.
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
I
@ 1.8
.... 100",
,
I
CONDITIONS:
RDS(ON) CONDITIONS: ID =8.0 A. VGS =10V
VGS(TH) CONDITIONS: ID =250~A. VDS =VGS
lOps
I'
..........
I
I
2.2
-- --r--
~
L
..........
~
,..., V- L
-r---
::::::::::,
1-
/ROSIONI
--
VGSITHI_
I--
I-
0.2
O. 1
4
6 8 10
20
40 60 BO 100
200
Vas. DRAIN-SOURCE VOL TAGE (VOLTSI
-40
400 600 1000
o
40
80
120
160
T J • JUNCTION TEMPERATURE (OCI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSION) AND VGSITH) VS. TEMP.
184
IRF540,541
D84EL2,K2
~D~[P~
27 AMPERES
100, 60 VOLTS
ROS(ON} = 0.085
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
:~~~\!·~;\rt
.05511.391
.
1
.04811.221
-.--- -
.26516.731
.24516.221
Features
/
• Polysilicon gate - Improved stability and reliability
~
I
~51
~.31
TERM.l
• Voltage controlled - High transconductance
TERM.2
• Low input capacitance - Reduced drive requirement
TERM.3
.0331~.841
• Excellent thermal stability - Ease of paralleling
.02710.691
..fI ",~III\4i-i--,
.00110.0251
.500112.7IMIN.
.05511.391
:1i45iT.l4i
.10712.721
.OB712.211
.!lJ::If.l0512.671
~ ,"09512.411
.05511.391-----1
.04511.141
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!)
Continuous Drain Current@Tc = 25°C
@TC = 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ T C = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
CASE
TEMPERATURE
REFERENCE
/
POINT
.35519.021---r
.32518.251
.220~.591
+
• Ultra-fast switching - Independent of temperature
=25° C)
_
.,.r---+--I-----1f[--
: ~!~:~:~~:DIA.
• No secondary breakdown - Excellent ruggedness
maximum ratings (T C
n
i:=
.21015.331
.19014.821
.02110.531
.01510.361
(unless otherwise specified)
IRF540/084EL2
100
100
27
17
108
±20
125
1.0
IRF541/084EK2
60
60
27
17
108
±20
125
1.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.00
80
1.00
80
°CIW
°CIW
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
h
-
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
185
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
-
250
1000
tJA
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
27
-
-
A
ROS(ON)
-
0.073
0.OB5
Ohms
gfs
5.4
7.0
-
mhos
Ciss
-
1400
1600
pF
550
BOO
pF
120
300
pF
20
-
ns
I
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 25011A)
IRF540/DB4EL2
IRF541/DB4EK2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS':' OV, Tc = 25°C)
(VOS = Max Rating, x O.B, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS= VGS, 10. = 250 p,A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 15A)
Forward Transconductance
(VOS = 10V, 10 = 15A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Coss
Reverse Transfer Capacitance
f = 1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
10 = 15A, VGS = 15V
tr
-
115
td(off)
-
50
tf
-
30
td(on)
Turn-off Delay Time
RGEN = 50.0., RGS = 12.5.0.
Fall Time
(RGS (EQUIV.) = 10.0.)
ns
ns
ns
source-drain diode ratings and characteristics*
27
A
ISM
-
-
Pulsed Source Current
-
10B
A
Diode Forward Voltage
(TC = 25°C, VGS = OV, Is = 27A)
VSO
-
1.2
2.5
Volts
trr
-
250
2.0
-
ns
tJC
Continuous Source Current
Is
Reverse Recovery Time
(Is = 27A, dls/dt = 100A/I1sec, Tc = 125°C)
·Pulse Test: Pulse Width
2.4
600
400
2.2
200
a:
100
w
2
~
o
-"
.......
1.8
~
1.6
I'..
It
~
1.4
/
,,/'
......
\
19
6
' ....
' ....
~
................
'"
!":--. 10J.ls
r- SINdLE PUL~E
I IT
Tc =2SoC
."'-
1
4
6 8 10
20
~, 1.2
"
~
.... 1m,
"'-
-
. . . "'- '
IRF541/D84EK2
IRFS40/DB4EL2'
I
:;:
100",
........
OPERATION IN THIS AREA.......
.......
MAY 8E LIMITED BY ROSIONI
..........
I
a:
.......
20
1
~
:::;
40
CJ
I
-
=
=
o
a:
l5
I
I
I
I
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 15 A, VGS = 10V
2.0 -VGS(TH) CONDITIONS: '0 = 250pA. VOS VGS
i :
t;
:s 300 ps, duty cycle :s 2%
1000
800
Bi
-
ORR
-
40
u
z
<1
a:
Q
j.
2.4
~
1.8
~
1.6
:::;
100
80
60
.......
I'-
I'x:
-I.
'\
/'
20
4
r--.""'I'"
r--..
""'-
I
I
I
I
I
TC'250C
j
I
4
j
JI
V
........V
0:
-...; "
f'.-
OPERATION IN THIS AREA"
......
MAY BE LIMITED BY ROSIONI
...................
I
I
I-SINGLE PULSE
1
I',
r--"'" .""'-
//
10
8
6
I
o
200
40
I
CONDITIONS:
r- ROS(ON) CONDITIONS:
10 =15 A, VGS =10V
2.0 r- VGS(TH) CONDITIONS: 10 =250.A, VOS =VGS
2.2
~
~
"
~
"
r-- r--
1.2
1.0
z
1m.
-0: 08
~ .
S
10m.
a:
" "I ' " "100m.
1--
0.6
--
~
~
-~ r--
0.4
/
ROSIONI1
-- -,I
~GSITHI
-
0.2
IRF543-.... " "
IRF542.- H
DC
6 8 10
20
40 60 SO 100
200
Vos. DRAIN-SOURCE VOLTAGE (VOLTS)
1.4
;:
10••
100••
o
400 600 1000
-40
o
40
80
120
160
TJ , JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
188
IRF610,611
D84BN2,M2
~D~~
2.5 AMPERES
200,150 VOLTS
ROS(ON) = 1.5 il
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:~~g\::~;\rt
.055(1.39)
I
.048(1.22)
.--.
.265(6.73)
.245(6.221
• Polysilicon gate - Improved stability and reliability
:
~:~i~:~~:DIA.
TERM.l
• Voltage controlled - High transconductance
1f,...mll'!in-.
TERM.2
---:J.591
~51
.001(0.0251
.500(12.7)MIN .
.055(1.391
.045(1.141
TERM.3
• Low input capacitance - Reduced drive requirement
.0331~.841
.027(0.69)
• Excellent thermal stability - Ease of paralleling
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ T C = 25° C
@TC= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ T C = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
/ ' POINT
.325(8.251
~"'"'
• Ultra-fast switching - Independent of temperature
CASE
TEMPERATURE
REFERENCE
.355(9.02)
~
I
• No secondary breakdown - Excellent ruggedness
maximum ratings (TC = 25 0 C)
•
/t--+---I-----+t-i,--'.,I
r
+
Features
.1~.105(2.67)
.095(2.4 11
.055(1.391--/
.045(1.14)
\+-.
j.-
.210(5.33)
.190(4.82)
.107(2.721
.087(2.211
.021(0.53)
.015(0.381
(unless otherwise specified)
IRF610/084BN2
200
200
2.5
1.5
10
±20
20
0.16
IRF611/084BM2
150
150
2.5
1.5
10
±20
20
0.16
UNITS
Volts
Volts
A
A
A
Volts
Watts
WloC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
6.4
80
6.4
80
°CIW
°CIW
h
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
189
= 25° C)
electrical characteristics (T c
I
(unless otherwi~e specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
200
150
-
-
Volts
-
250
1000
p.A
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.5
-
-
A
ROS(ON)
-
1.28
1.5
Ohms
off characteristics
Drain-Source Breakdown Voltage
IRF610/D84BN2
IRF611/D84BM2
(VGS =OV, 10 =250 p.A)
Zero Gate Voltage Drain Current
(V OS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
Gate-Source Leakage Current
(VGS =±20V)
loss
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 fJA)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =1.25A)
Forward Transconductance
(VOS =10V, 10 =1.25A)
gfs
0.72
0.75
-
mhos
Ciss
-
120
150
pF
Coss
C rss
40
80
pF
10
25
pF
td(on)
-
5
ns
tr
-
15
td(off)
-
10
tf
-
10
-
-
2.5
A
10
A
Vso
-
0.9
2.0
Volts
trr
ORR
-
150
0.9
-
ns
p.C
dynamic characteristics
=OV
Input Capacitance
VGS
Output Capacitance
VOS =25V
f =1 MHz
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS
=90V
=1.25A, VGS =15V
=500, RGS =12.50
(RGS (EQUIV.) =100)
Rise Time
10
Turn-off Delay Time
RGEN
Fall Time
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is
=2.5A)
Reverse Recovery Time
(Is =2.5A, dls/dt =100A/p.sec, Tc
=125°C)
'Pulse Test: Pulse Width :5 300 ps, duty cycle :5 2%
2.4
100
1
80
60
40
i3
If
ia:
~
u
20
~
:;
10
~
,
4
2
1.0
:sc 0.8
-
I
I
2.0
r- VGS(TH) CONDITIONS: '0 = 250~A. VOS = VGS
.......
"
"
0.6
0.4
r-
0.2
f- SING'LE PUL~E J I
OPERATION IN THIS AREA
MAY BE LlMITEO BY RDSIONI
Tc =25°C
0.1
1
'"
r"~
~~
4
T
""
'"
I'
1.6
~
1.4
~
>
1'",
Q
~
~ O. 8
z
~
IRF611/084BM 2
........
" "'"
l. 2
1.0
Z
1m,
--'RFtjjBj
...... 10m,
~
g>gm'
6 8 10
20
40 60 60 100
200
VDS - DRAIN-SOURCE VOL TAGE (VOLTS)
a:
2
0.6
0.4
o. 2
o
I
400 600 1000
V
VRDSIONI
~
~
100",
/'
ROS(ON) CONDITIONS: 10 = 1.25 A. VGS = 10V
1.8
a:
I"-
"\
Z
;;:
~ONDI~ONS: I
I-
Q
a:
!
I
2.2
/'
- -- -------V
./
./
~
VGSITHI -
-40
o
40
80
120
~
160
TJ • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
190
DO
D[]~[F~
IRF612,613
2.0 AMPERES
200, 150 VOLTS
ROS(ON) = 2.4 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
.~~~\:.~~\~
.055(1.391
.
.
I
.04811.221
,.--,
.265(6.731
:24slif.22i
,
.L--t--;------:ft-.j-..,
.-
Features
.355(9.021
.325(8.251
• Polysilicon gate - Improved stability and reliability
'~"" j
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
TERM.l
ifj.llll~i---1
CASE
TEMPERATURE
REFERENCE
~T
.220(5.591
---i.
.006(0.151
.001 (0.0251
.500(12.7IMIN.
TERM.2
• Voltage controlled - High transconductance
TERM.3
• Low input capacitance - Reduced drive requirement
.033(~.841
.027(0.691
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C =25°C)
RATING
Drah..Source Voltage
. • 1~.105(2.671
.095(2.411
.05511.391-/
.045(1.141
\4-'
f.-
.210(5.331
.190(4.821
.107(2.721
.08712.211
.02110.531
.01510.381
(unless otherwise specified)
IRF612
200
200
IRF613
150
150
UNITS
Volts
Volts
10
2.0
1.25
2.0
1.25
A
A
10M
8
8
A
VGS
±20
±20
Volts
Po
20
0.16
20
0.16
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Case
R8JC
6.4
6.4
°C/W
Thermal Resistance, Junction to Ambient
RBJA
80
80
°C/w'
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
TL
260
260
°C
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current@Tc = 25°C
@TC= 100°C
Pulsed Drain Current")
Gate-Source Voltage
Total Power DiSSipation @TC = 25°C
Derate Above 25°C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
191
=25° C) (unless otherwise specified)
electrical characteristics (Tc
I
CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVDSS
200
150
-
-
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 250 pA)
IRF612
IRF613
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
. (V OS = Max Rating, x 0.8, VGS =OV, Tc = 125°C)
loSS
Gate-Source Leakage Current
(VGS = ±20V)
-
Volts
-
250
1000
pA
-
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.0
-
-
A
ROS(ON)
-
1.5
2.4
Ohms
gfs
0.72
0.75
-
mhos
150
pF
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 J.LA)
Tc
=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.25A)
Forward Transconductance
(V OS = 10V, 10 = 1.25A)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
-
120
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
-
40
80
pF
10
25
pF
td(on)
-
5
-
ns
-
ns
10
-
2.0
A
ISM
-
8.0
A
VSO
-
0.8
1.8
Volts
trr
-
150
0.9
-
ns
pC
Reverse Transfer Capacitance
switching characteristics* .
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 1.25A, VGS
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.)
= 15V
=500., RGS = 12.50.
= 100.)
tr
td(off)
tf
15
10
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 2.0A)
Reverse Recovery Time
(Is = 2.5A, dls/dt = 100A/psec, Tc
= 125°C)
ORR
'Pulse Test: Pulse Width :s; 300 JJS, duty cycle :s; 2%
100
80
60
2.4
2.0 2.2
40
'" 1.0
c
z
1m,
~ O.B
z
"
IRF623~ ~
°
~
a:
10ms
100m,
OC
0.4
c-----
--
".........
V
//'
./
V
r--
i""'"""
--
~G~ -
0.2
IjF62Y--i
1
6 B 10
20
40 60 SO 100
200
Vos. DRAIN-SOURCE VOLTAGE IVOL TSI
0.6
r--
/'
o
400 600 1000
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE I'C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
196
IRF630,631
D84DN2,M2
~D~~U
9.0 AMPERES
200, 150 VOLTS
RDS(ON) = 0.4 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.404110.26) • : :~\~.~~\
.38019.65)1· I ·
-L
__ +
• Polysilicon gate - Improved stability and reliability
+
.• 1'445,1133.·6588))OIA.
• No secondary breakdown - Excellent ruggedness
.----
.265(6.73)
.24516.221
TERM.l
• Voltage controlled - High transconductance
.05511.39)
.04811.221
_
CASE
TEMPERATURE
REFERENCE
/
POINT
:~~;\~:~;l----'
~
(33)
~•
• Ultra-fast switching - Independent of temperature
-tr...IllIIoolr+--,
~59)
.006(0.15)
.00110.025)·
.500112.7)MIN.
TERM.2
TERM.3
• Low input capacitance - Reduced drive requirement
.0331~.B4)
.027(0.69)
• Excellent thermal stability - Ease of paralleling
.1~.'0512.67)
.09512.41)
.055(1.39)--1
.045(1.14)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MH
Continuous Drain Current @ Tc = 25°C
@Tc = 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
.'701432)~
.
I
-
/I---+--+----lfr--
Features
maximum ratings (T C = 25° C)
f
.19014.83)
1:=
.210(5.33)
.19014.82)
.10712.72)
.087(2.21)
.02110.53)
.015(0.38)
(unless otherwise specified)
IRF630/D84DN2
200
200
9.0
6.0
36
±20
75
0.6
IRF631/D84DM2
150
150
9.0
6.0
36
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°c
ROJC
ROJA
1.67
80
1.67
80
°C/W
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
197
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
200
150
-
-
Volts
250
1000
/.IA
±500
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250/.lA)
IRF630/D84DN2
IRF631/D84DM2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
losS
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
9.0
-
-
A
ROS(ON)
-
0.34
0.4
Ohms
gfs
2.4
3.0
-
mhos
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 MA)
Tc = 25°C.
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 5.0A)
Forward Transconductance
(VOS = 10V, 10 = 5.0A)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
-
650
800
pF
Output Capacitance
VOS = 25V
.f = 1 MHz
Coss
C rss
-
150
450
pF
30
150
pF
td(on)
-
15
-
ns .
-
ns
20
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 5.0A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
tr
(RGS (EQUIV.) = 100)
td(off)
tf
25
30
ns
ns
source-drain diode ratings and characteristics*
Is
-
A
ISM
-
-
9.0
Pulsed Source Current
36.0
A
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is = 9.0A)
VSO
-
1.0
2.0
Volts
trr
-
300
2.5
-
ns
/.IC
Continuous Source Current
Reverse Recovery Time
(Is = 9.0A, dls/dt = 100AI/.Isec, Tc
=125°C)
ORR
·Pulse Test: Pulse width :5 300 /-IS, duty cycle :5 2%
100
SO
60
40
f3
2A
...... ;' ""'I'..
20
\
a:
~
10
~ ~
~
a:
~
(,)
I
2.2
4
~'
2
2
;;: 1.0
~ O.S
Q 0.6
" )< ""'- """
.'
:--...
""....~
1\
~
t-...
I"
.......
OPERATION IN THIS AREA
MAY BE LIMITEO SY RoS ON
w
N
100"s
r-...
1.6
~
a:
lA
I,
~
>
1.0
10ms
1.4
0.8
<.
~
CJ
;;:
./
,,~
."
10
8
6
OPERAT10N IN THIS AREA
MAY BE LIMITED BY ROSION)
2 -SINdLE
PUL~E I I I
Tc=2SoC
1
~
"-
"-
r.......
I'
pC
4
'"
~~ lOps
",
"
'"
"
"
."'- ~
......
-
1
I
I
I
I
t.B
1.6
II:
II:
II:
I
ROSION)
./
c
200
!Zw
I
CONDITIONS:
t--RDS(ON) CONDITIONS: 10' 10 A. VGS • 10V
2.0 t--- VGS(TH) CONOITIONS: 10' 2S0pA, VOS' VGS
2.2
600
400
........
~
1.2
"
1.0
~
.,
lOOp,
1.4
~ 0.8
z
o
1m,
I-0oI
-IRF643
~IRi642
r--. lOms
r--.
~ 0.6
-
II:
0.4
/
----------
V
./
../'
/
r--- r--
-
VGSITH'-
~
0.2
lOOms
20
40 60 80100
200
6 8 10'
Vos. DRAIN-SOURCE VOLTAGE (VOLTS)
V
o
400 600 1000
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
204
IRF710,711
~o~~~LF
D84BQ2~BQ1
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:1~g\::~~\rt
.055(1.39)
I
.048(1.22)
-.---
.265(6.73)
.245(6.22)
Features
• Polysilicon gate -
1.5 AMPERES
400, 350 VOLTS
RDS(ON) =3.6 .0.
.
•
CASE
.L----+---l---~ftI
Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
:1:m:~~:D1A.
• Ultra-fast switching - Independent of temperature
TERM.l
• Voltage controlled - High transconductance
• Low input capacitance -
TERM.2
Reduced drive requirement
+
; +"
.02710.69)
.220(5.59)
--.i..
.006(0.15)
.001 (0.0251
j
.500112.7IMIN.
.I~.10512.67)
~ _.09612.411
.05511.39)
.I!--"
.04511.141----'
I--
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M.o.
Continuous Drain Current @Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
--,
TERM.3
.0331~.84)
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25° C)
.35519.02)
.32518.251
TEMPERATURE
REFERENCE
/
POINT
.21015.331
.190(4.821
~
.10712.72)
.08712.21)
.02110.53)
.01510.381
(unless otherwise specified)
IRF710/D84BQ2
400
400
IRF711/D84BQ1
350
350
UNITS
Volts
Volts
1.5
1.0
6
±20
20
0.16
1.5
1.0
6
±20
20
0.16
A
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
6.4
80
6.4
80
°CIW
°CIW
h
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
A
Volts
Watts
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
205
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
-
-
-
250
1000
I1A
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
1.5
-
-
A
ROS(ON)
-
-
3.6
Ohms
gfs
.45
-
-
mhos
-
-
150
pF
-
50
pF
15
pF
-
10
-
ns
-
1.5
A
6
A
1.6
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 25011A)
IRF710/D84B02
IRF7111D84B01
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.5A)
Forward Transconductance
(VOS = 10V, 10 = 0.8A)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 175V
td(on)
Rise Time
10 = 0.8A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
tr
td(off)
tf
(RGS (EQUIV.) = 100)
15
10
10
ns
ns
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
-
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 1.5A)
VSO
-
-
trr
-
200
1.5
Continuous Source Current
Is
Reverse Recovery Time
(Is = 1.5A, dls/dt = 100A/l1sec, Tc = 125°C)
-
ORR
-
ns
I1C
'Pulse Test: Pulse width:::; 300 ps, duty cycle:::; 2%
100
80
60
40
2.4
2.2
I
w
N
1.8
o
1001'
/
/
,/
1.4
r-- r--
1.2
1.0
(J
4
2
z
<1
1.3
1.0
~ O.B
" 0.6
- 0.4
2.0
-
CONDITIONS:
ROSION) CONDITIONS: 10 = 0.8 A. VGS = 10V
VGS(TH) CONDITIONS: 10 =250~. VOS = VGS _ ROSION}
I,
I/
V
1.6
~
........
~
~
~
.... ~
""
~..... OPERirlON IN THIS AREA
MAY BE LlMITEO BY ROSION}
0.2 I- SINGLE PULSE
Tc =2SoC
4
....
,
..........
,
10 p.S
"
>
Q
1.0
---
1,2
~
Z
~ 0.8
1m,
t-.............
:~ ~
~
6 8 10
20
40 60 80 100
200
Vos. DRAIN-SOURCE VOLTAGE IVOL TSI
1.4
x~
10",-
~
~
z
o
r-
eno
0.6
0:
IRF713
0.4
~}Rtt
TOms
V
/
1.8
V
0:
....
iii
t---
Q
20
0:
~
2.2
./
,/
"
r-- 1::::::::::"",
I-"""
.-
-----
V
-~
-
0.2
100';'s
o
400 600 1000
-40
o
40
80
120
160
T J. JUNCTION TEMPERATURE lOCI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
20S
IRF720,721
D84CQ2,Q1
~D~~
3 AMPERES
400, 350 VOLTS
RDS(ON) =1.8 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
:~~g\!·~;\rt
.05511.391
.
1
.04811.221
.-- .
.26516.731
.24516.221
Features
/
• Polysilicon gate - Improved stability and reliability
:~:~I~:~~:DIA.
• No secondary breakdown - Excellent ruggedness
+
• Ultra-fast switching - Independent of temperature
TERM.l
• Voltage controlled - High transconductance
Gate-Source Voltage
Total Power Dissipation @TC
Derate Above 25° C
Operating and Storage
Junction Temperature Range
=25°C
/
.32518.251
--:I591
POINT
.500112.7IMIN.
.05511.391
.04511.141
.1~.10512.671
.02710.69)
.05511.391
,I
.04511.141---1
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mn
Continuous Drain Current @ T C = 25° C
@TC =100°C
Pulsed Drain Current(1)
.35519.021
TERM.3
.0331~.B41
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C =25° C)
CASE
TEMPERATURE
REFERENCE
.~
~i~1
-T"'"'
·1
.ffj.!lII~n--,
TERM.2
• Low input capacitance - Reduced drive requirement
•
,.'..---+--I---~t~l-"'"
T
.10712.721
.08712.211
~"'" ":o95i2.4ii
1--'
I+-
.2/015.331
.19014.821
.02110.531
.01510.38)
(unless otherwise specified)
IRF720/D84CQ2
400
400
3
2
12
±20
40
0.32
IRF721/D84CQ1
350
350
3
2
12
±20
40
0.32
UNITS
Volts
Volts
A
A
A
Volts
Watts
WloC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
ReJA
3.12
80
3.12
80
°C/W
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
209
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
-
250
1000
/1A
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
3.0
-
-
A
ROS(ON)
-
1.4
1.8
Ohms
gfs
0.9
1.S
-
mhos
Ciss
Coss
Crss
-
385
70
12
SOO
200
40
pF
pF
pF
td(on)
tr
-
td(off)
tf
-
-
15
10
25
15
-
ns
ns
ns
ns
-
3
12
A
A
1,0
1.S
Volts
280
2.0
-
ns
I1C
off characteristics
Drain-Source Breakdown Voltage
IRF720/D84CQ2
IRF721/D84CQ1
(VGS = OV, 10 = 25OI1A)
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
Gate-Source Leakage Current
(VGS = ±20V)
loSS
on characteristics*
Gate Threshold Voltage
\ (VOS = VGS, 10 = 250 p.A)
On~State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.5A)
Forward Transconductance
(VOS = 10V, 10 = 1.5A)
Tc = 25°C
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 10V
VOS = 25V
f = 1 MHz
-
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VOS = 175V
10 = 1.5A, VGS = 15V
RGcN = 50.0, RGS = 12.5.0
(RGS (cQUIV.)= 10.0)
-
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 3A)
Reverse Recovery Time
(Is= 3A, dls/dt = 100AII1sec, Tc = 125°C)
-
IS
ISM
VSO
-
trr
QRR
-
·Pulse Test: Pulse width :S 300 liS, duty cycle :S 2%
100
2.4
80
60
40
2.2
I
I
I
I
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 =1.5 A. Vas =10V
VaS(TH) CONDITIONS: 10 250~A. VOS V a s - ROSIONI
_
=
2.0 -
l1!
20
a:
il:!
~
ffi
a:
!§
...2
<1
is
10
:
0.4
~
. r--
"0.2
0.1
./
\
2
1.0
1
,
/
/~
..........
1\
4
0.8
C 0.6
-
.
./\
PU~SE
f
......
I
4
~
1.6
!il
1.4
a:
.......
.........
~~
SINGLE
Tc =260 C
1.8
:;
~
f- OPERATION IN THIS AREA
f-MAY BE LIMITED BY ROSIONI
o
~
.......
..........
r-.
10~~-
" '" ~
I
100~s-
;
I
~
~~
6 B 10
20
40 60 SO 100
200
Vos. DRAIN-SOURCE VOLTAGE IVOLTS)
1.2
'"
1.0
IRF7211
o84CQ1
2
IRF7201
a:
.
..:;; OB
o
~ 0.6
~t
0.4
=
V
-
-"
/
.I /
/
V
/'
r--- r-,......
V
V
./
r--- r-
-.::~ ft-- -
0.2
10m.
100':"s
~
~
I,
o
400 600 1000
-40
40
80
120
160
T J • JUNCTION TEMPERATURE I'C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
210
~D~CS~
IRF722,723
2.5 AMPERES
400, 350 VOLTS
ROS(ON) = 2.5 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
::;g\!'~~\ft
.05511,39)
,
1
,04611.22)
...--.
,26516,73)
,24516,221
Features
It
• No secondary breakdown -
.35519,02)
,32516,25)
~
Excellent ruggedness
130133)
~,
Independent of temperature
TERM,l
e Voltage controlled -
High transconductance
• Low input capacitance -
;..t"I~~----,
,0331~,64)
,02710,69)
Gate-Source Voltage
Total Power Dissipation @Tc
Derate Above 25° C
Operating and Storage
Junction Temperature Range
= 25°C
=100°C
=25°C
,00610,15)
,001(0,025)
,500112,7)MIN,
al hr
,10512,67)
~ •• 09512,411
,065 1.39
.1
,0451,14 -..,
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mn
Continuous Drain Current @ Tc
@Tc
Pulsed Drain Current(l)
~59)
TERM,3
Ease of paralleling
maximum ratings (TC = 25° C)
~
TERM,2
Reduced drive requirement
• Excellent thermal stability -
CASE
TEMPE RATURE
REFERENCE
OINT
Polysilicon gate - Improved stability and reliability
• Ultra-fast switching -
•
1---+--I-------l,1-- i--..,
1--.
I+-
.10712,72)
,06712,21)
,21016,33)
,19014,62)
(unless otherwise specified)
SYMBOL
Voss
VOGR
10
10M
VGS
Po
IRF722
400
400
2.5
1.5
10
±20
40
0.32
IRF723
350
350
2.5
1.5
10
±20
40
0.32
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
3.12
80
3.12
80
°C/W
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
211
= 25° C)
electrical characteristics (Tc
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
-
-
250
1000
jlA
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.5
-
-
A
-
2.0
2.5
Ohms
9fs
0.9
1.6
-
mhos
-
385
600
pF
-
70
200
pF
-
12
40
pF
. off characteristics
IRF722
IRF723
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 JJA)
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, TC =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
losS
Gate-Source Leakage Current
(VGS =±20V)
IGSS
-
-
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 IJA)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =1.5A)
Forward Transconductance
(VOS = 10V, 10 =1.5A)
ROS(ON)
dynamic characteristics
Input Capacitance
VGS = 10V
Ciss
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switching characteristics*
=175V
Turn-on Delay Time
VOS
Rise Time
10 =1.5A, VGS
Turn-off Delay Time
RGEN = 500, RGS = 12.50
-
15
-
ns
-
10
-
ns
25
-
ns
-
2.5
A
ISM
-
10
A
VSO
-
0.9
1.5
Volts
trr
-
280
2.0
-
td(on)
tr
=15V
id(Off)
tf
=100)
source-drain diode ratings and characteristics*
Fall Time
(RGS (EQUIV.)
Continuous Source Current
Is
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS =OV, Is
=2.5A)
Reverse Recovery Time
(Is = 3.0A, dls/dt =100Aljlsec, Tc = 125°C)
ORR
15
ns
ns
J.lC
'Pulse Test: Pulse Width :s; 300 f../S, duty cycle :s; 2%
2.4
100
80
60
40
fa
I
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 1.5 A. VGS = 10V
2.0 I - - VGS(TH) CONDITIONS: 10 = 250,.1\, VOS = VGS -
2.2 c - -
~
...z
w
~
,
:
4
2
:;( 1.0
0.8
" 0.6
-
0.4
T
0.2 0.1
I
......
,/
~
./
-.....;:
I..........
~
I'- OPERATION IN THIS AREA
I- MAY 8E LIMITED BY ROSIO'NJ
PU~SE
SINGLE
T =2S·C
f
......
......
~~
Y
z
IS
1.8
V
::i
10
a:
!5u
ROSIONJ
Q
20
a:
~
/
I,lL
I
4
............
............
.....
"
~
...........
~
a:
.....
10.,.-
"
%
~
I
1.6
1.4
r--- r---
1.2
" 1.0
>
Q
1001'
Z
-:.. 0.8
z
o
1m'
.-IRF723
l~ ~
~
a:
~Ilt
10m?
lOOms
~
6 8 10
20
40 60 80 100
200
Vos. DRAIN-SOURCE VOL TAGE (VOLTS)
~
0.6
0.4
-
/
r---
/'
/
V
/'
.",..- i-""
r-- r--
---
~GSITHJ
-
0.2
o
400 600 1000
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDstONI AND VGSITHI VS. TEMP.
212
IRF730,731
D84DQ2,Q1
~D~[¥~
5.5 AMPERES
400, 350 VOLTS
RDS(ON) = 1.0 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
404(1026) .116(2.95)
1-0-'.380(9.65) .j.ll0(2.79)
I
I I
I----I.--j-L.
--
Features
/
• Polysilicon gate - Improved stability and reliability
f
+
TERM.l
High transconductance
CASE
TEMPERATURE
REFERENCE
.355(9.02)
/
.325(8.25)
--:I59)
~
I
4;'~1I1\4n---'
.027(0.69)
POINT
~15)
.001(0.0251
.500(12.7)MIN.
.lll~.I05(2.67)
.055(1.39)-1
.045(1.14)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
_
TERM.3
.033(~.84)
• Excellent thermal stability - Ease of paralleling
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @Tc = 25°C
@Tc = 100°C
Pulsed Drain Current(1)
_
TERM.2
• Low input capacitance - Reduced drive requirement
maximum ratings (TC =25° C)
.265(6,731
.245(6.22)
~.3)
• Ultra-fast switching - Independent of temperature
o Voltage controlled -
--j
--.----- -
I--+--+-----Jtl-T
:::~:~:~::DIA.
• No secondary breakdown - Excellent ruggedness
t
'190(4'83)ri .055(1.39)
.170(4.32)
.048(1.22)
.10712.72)
.087(2.21)
~ •.095(2.41)
1---'
I+-
.210(5.33)
.190(4.82)
.021(0.53)
.015(0.38)
(unless otherwise specified)
IRF730/D84DQ2
400
'400
5.5
3.5
22
±20
75
0.6
IRF731/D84DQ1
350
350
5.5
3.5
22
±20
75
Q.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
80
1.67
80
°CIW
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
213
electrical characteristics (T c= 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
-
250
1000
JlA
·GSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
5.5
-
-
A
ROS(ON)
-
O.S
1.0
Ohms
9fs
2.1
2.5
-
mhos
Ciss
-
650
SOO
pF
Coss
C rss
-
100
300
pF
15
SO
pF
td(on)
-
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 JlA)
IRF730/DS4DQ2
IRF731/DS4DQ1
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, TC = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Tc = 25°C
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 3A)
Forward Transconductance
(VOS = 10V, 10 = 3A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
switching characteristics*
Turn-on Delay Time
VOS = 175V
Rise Time
10 = 3A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
15
-
ns
20
-
ns
30
ns
20
-
-
ns
source-drain diode ratings and characteristics*
5.5
A
-
22
A
VSO
-
1.0
1.6
Volts
trr
QRR
-
360
4.0
-
ns
JlC
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 5.5A)
Reverse Recovery Time
(IS = 5.5A, dls/dt = 100AIJlsec, Tc = 125°C)
·Pulse Test: Pulse width::;; 300 p.s, duty cycle::;; 2%
2.4
100
80
60
I
2.2
40
r-....
10
l :
~
4
)('
II:
g;
";;:Z
2
:sc
1.0
0.8
0.6
-
0.4
I
I
./
Q
20
II:
w
I CONJlll0N!:
ROS(ON) CONDITIONS: 10 =·3.0A. VGS = 10V
VGS(TH) CONDITIONS: 10 = 250~A. VDS = VGS
2.0
ffi
I
L/'
A ",
'I'
........
....... I'-..
l'
::;
~
......... r-..,
,
,
IRF731/D84DQ~
lOaf'
~
l~S
>
~
Z
1
4
6
8 10
20
40
1.6
60 80100
200
VRDsaNI
V
1.4
1.2
- -- -"-
1.0
0.8
~ 0.6 [ -
..-V
./
,
..,/
V
--r--- ~
Vo ITHI-
a: 0.4
DC
+:- l°~f
0.2
.IRF730ID84DQ2':'"
0.1
/
Q
«
~
10ms
,"-'
SINGLE PULSE
I Tc=2S"C I
~
laps
~
..............
I' ""'"
.......... !'-.
I I
loB
a:
I~ ........ r-....
OPERATION IN THIS AREA
MAY BE LIMITED BY RDSIONI I"- ~
0.2
~
~
, /.
a
400 600 1000
V DS ' DRAIN-SOURCE VOLTAGE (VOL 1'51
-40
80
40
TJ • JUNCTION TEMPERATURE I'CI
120
160
TYPICAL NORMALIZED Roslo~1 AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
214
~ffi1D~[P~
IRF732,733
4.5 AMPERES
400, 350 VOLTS
ROS(ON) = 1.5 0
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer charac~ristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
:;~~\!·~;\rt
.055(1.391
•
I
.048(1.221
.--
.265(6.731
.245(6.221
Features
/
:~~;\~:~;:-,
.220(5.59)
~
~.3)
TERM.l
• Voltage controlled - High transconductance
.{f;'~IIIIooiH--..,
TERM.2
~51
.001(0.0251
.500(12.7)MIN.
.0~511.391
.0 5(1.141
• Low input capacitance - Reduced drive requirement
TERM.3
.033(~
• Excellent thermal stability - Ease of paralleling
Ilhr.
105(2.671
.0271~~ ".095(2.411
.05511.391----1
.045(1.141
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1MO
Continuous Drain Current@Tc = 25°C
@Tc =100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @Tc =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
CASE
/ ' " POINT
+
68
'.114
451((33·. 58)I DlA.
• Ultra-fast switching - Independent of temperature
maximum ratings (TC = 25° C)
•
.L--+--I-----ltr-;-.,I
TEMPERATURE
r
REFERENCE
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
.
1:=
.10712.721
.087(2.21)
.2105.33
.1 0(4.821
(unless otherwise specified)
IRF732
400
400
4.5
3.0
18
±20
75
0.6
IRF733
350
350
4.5
3.0
18
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.67
80
1.67
80
°CIW
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1)
..
Repetitive Rating: Pulse width limited by max. junction temperature.
215
electrical characteristics (T c = 25° C)
I
(~nless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVDSS
400
350
-
-
-
250
1000
J1A
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
4.5
-
-
A
ROS(ON)
-
1.2
1.5
Ohms
gfs
2.1
2.5
-
mhos
Ciss
-
650
800
pF
100
300
pF
-
15
80
pF
15
ns
20
-
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 J1A)
IRF732
IRF733
Zero Gate Voltage Drain Current
(VOS::;: Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loss
Gate-Source Leakage Current
(VGS= ±20V)
-
-
Volts
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p,A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 3.OA)
Forward Transconductance
(VOS = 10V, 10 = 3.OA)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 175V
·RiseTime
10 = 3A, VGS = 15V
-
td(on)
tr
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
~(off)
tf
20
30
ns
ns
ns
source-drain diode ratings and characteristics*
4.5
A
ISM
-
-
Pulsed Source Current
-
18
A
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 4.5A)
VSO
-
0.9
1.5
Volts
trr
-
360
4.0
-
Continuous Source Current
IS
Reverse Recovery Time
(Is = 5.5A, dls/dt = 100AIJ1sec, Tc = 125°C)
ORR
ns
J1C
'Pulse Test: Pulse width :5 300 Jls, duty cycle :5 2%
2.4
100
80
60
40
I
2.2
ffi
20
'x "-
a:
~
10
~ ~
't
"-
I-
"
w
a:
4
~
2
";;:
1.0
u
2i o.
_" o. ~r'
\
1-. OPERATION
"~i'-i'-. '" '"
IN THIS AREA
-MAY BE LlIMI~E? BY ROSIONI
0.4
SINGLE PULSE
Tc =25OC
o. 2
'"
'"
"-
"-
l°i'
f'.
4
1.6
~
1~'
6 8 10
20
40 60 80 100
200
Vos. DRAIN-SOURCE VOLTAGE {VOLTSI
1.4
~
1.2
/.
V
>'"
1.0
"./
"Z
~ 0.6 1 c
a:
0.4
DC
I
...... VROSIONI
C
'" l°~f
I
L/
"
0.4
/
- ---
r---
- --
V
. . .V
",.
...........
,.... .........-
r---f-
--
~GStTH)
-
-
0.2
10m~1.
lOOms
o
400 600 1000
-40
o
40
SO
120
160
TJ • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
224
IRF830,831
D84DR2,R1
~D~~~LF
4.5 AMPERES
500, 450 VOLTS
~DS(ON) = 1.5.0.
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:~~~\!:~;\rt
.05511.39)
)
.048(1.22)
-.--- .
.26516.73)
.24516.22)
Features
• Polysilicon gate - Improved stability and reliability
/
+
'.11 :~1133..6588» 0 IA.
.35519.02);/' POINT
~
130(33)
~.
• Ultra-fast switching - Independent of temperature
TERM.l
.500112.7)MIN.
TERM.3
.03:i1~.84)
• Excellent thermal stability - Ease .of paralleling
.02710.69)
.10712.72)
.08712.21)
.11hJ--.l0512.67)
~ " .. 09512.411
.055(1.39)
.1
.04511. 14)--"
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M.o.
Continuous Drain Current @ TC = 25°C
@TC = 100°C
Pulsed Drain Current (1 )
Gate-Source Voltage
Total Power Dissipation @ TC =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
~5)
.001(0.025)
TERM.2
• Low input capacitance - Reduced drive requirement
maximum ratings (T C =25° C)
CASE
TEMPERATURE
REFERENCE
.32518.25)-----'
.22015.59)
• No secondary breakdown - Excellent ruggedness
• Voltage controlled - High transconductance
_
1--+---I-----tt-lr---l..,1
T
1+--'
J---
.21015.33)
.19014.82)
.021(0.53)
.01510.381
(unless otherwise specified)
IRF830/D84DR2
500
500
4.5
3.0
18
±20
75
0.6
IRF831/D84DR1
450
450
4.5
3.0
18
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R6JC
R6JA
1.67
80
1.67
80
°C/W
°C/W
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: VB" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
225
electrical characteristics- (Tc = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
.
I SYMBOL I
MIN
TYP
MAX
UNIT.
BVDSS
500
450
-
-
Volts
-
250
1000
pA
IGSS
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
4.5
-
-
A
ROS(ON)
-
1.3
1.5
Ohms
9fs
1.75
2.2
-
mhos
-
650
800
pF
-
90
200
pF
-
15
60
pF
-
15
ns
25
-
-
4.5
A
off characteristics
Drain-Source Breakdown Voltage
. (VGS OV, 10 250 pA)
=
I RF830lD84DR2
IRF831/D84DR1
=
Zero Gate Voltage Drain Current
(VOS Max Rating, VGS OV, TC 25°C)
(VOS Max Rating, x 0.8, VGS OV, Tc 125°C)
=
=
=
=
=
loss
=
Gate-Source Leakage Current
(VGS ±20V)
=
on characteristics*
Gate Threshold Voltage
(VOS VGS, 10 250 p.A)
=
Tc
=
=25°C
On-State Drain Current
(VGS 10V, VOS 10V)
=
=
Static Drain-Source On-State Resistance
(VGS 10V, 10 2.5A)
=
=
Forward Transconductance
(VOS 10V, 10 2.5A)
=
=
dynamic characteristics
=OV
Ciss
VOS =25V
. Coss
Reverse Transfer Capacitance
f =1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS =225V
td(on)
Rise Time
10 =2.5A, VGS =15V
tr
Turn-off Delay Time
RGEN =500, RGS =12.50
td(off)
Fall Time
tf
(RGS (EQUIV.) =100)
source-drain diode ratings and characteristics*
Input ,Capacitance
VGS
Output Capacitance
Continuous Source Current
=
=
=4.5A)
Reverse Recovery Time
(Is 4.5A, dls/dt 100Alpsec, Tc
=
=
=125°C)
ns
ns
ns
-
18
A
VSO
1.0
1.4
Volts
trr
ORR
-
460
4.5
-
pC
ISM
Diode Forward Voltage
(Tc 25°C, VGS OV, Is
40
-
Is
Pulsed Source Current
10
ns
·Pulse Test: Pulse Width :5 300 ps, duty cycle :5 2%
2.4
100
SO
60
40
iii
w
a:
20
~
10
S
...z
w
6
::;;
~ .'"
" ,
B
4
\
a:
g;
u
z
't!J
J,
1.0
c
11
:l
0.8
Z
~ 0,6
lams
1
/'
~ 1.2
pO"!,
1
c
a: 0.4
ojs
/
/
/'
./ VROSIONI
N
'-
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
O.B
C 0.6
- 0.4
,
I
I
1
1
CONDITIONS:
ROS(ON) CONDITIONS: 10 2.5 A. VGS 10V
VGS(TH) CONDITIONS: 10 250pA. VOS VGS
I
r-2.0 r-2.2
-
-
V
./ -""
"-
.. /
.......V
- --
/"
-::r;- 1-0.
0.2
IRFS3l/0840R! ~
c
IRFS30/084DR2-l
4
6 S 10
20
40 60 80100
200
400 600 1000
Vas' DRAIN -SOURCE VOL TAGE (VOL TSI
-40
0
40
80
120
160
T J • JUNCTION TEMPERATURE ('CI
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
226
1-
~D~~~U
IRF832,833
4.0 AMPERES
500, 450 VOLTS
ROS(ON) = 2.0 .0.
FIELD EFFECT POWER TRANSISTOR
This series of N~Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
CASE STYLE TO-220AB
"9014'B3)~
.170(4.32) '-1
:g~~g :~~I
.----
.266(6.731
.245(6.22)
Features
1:
• Polysilicon gate -Improved stability and reliability
/
--+--I-----lff--
.--
+
: ::~:~:~~:DIA.
• No secondary breakdown - Excellent ruggedness
TERM.l
)
.f1"":.I'III~:-----'
~
.220(5.59)
--i
.006(0.15) .
.001(0.0251
.500( 12. 7)M I N.
TERM.3
.0331~.B41
• Excellent thermal stability - Ease of paralleling
.027(0.691
.1~.'05(2.67)
.05511.39)
_I
.045(1.14)--'
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M.o.
Continuous Drain Current @Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(1,
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
CASE
TEMPERATURE
REFERENCE
TERM.2
• Low input capacitance - Reduced drive requirement
maximum ratings (T C = 25° C)
$"1
~3.3
• Voltage controlled - High transconductance
.
OINT
.355(9.021
.325(B.25)
• Ultra-fast switching - Independent of temperature
_
.107(2.721
.087(2.211
~ ".096(2.41)
1--"
I--
.210(5.331
.190(4.82)
.021(0.53)
.015(0.381
(unless otherwise specified)
IRF832
500
500
4.0
2.5
16
±20
75
0.6
IRF833
450
450
4.0
2.5
16
±20
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
1.67
80
1.67
80
°CIW
°CIW
h
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
. Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
227
electrical characteristics (Tc =25° C)
1
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
500
450
-
-
Volts
-
250
1000
pA
±500
InA
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFS32
IRF833
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
-
-
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
4.0
-
-
A
-
1.5
2.0
Ohms
-
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 ~A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 2.5A)
ROS(ON)
Forward Transconductance
(VOS = 10V, 10 = 2.5A)
gfs
1.75
2.2
-
mhos
Ciss
-
650
800
pF
90
200
pF
15
60
pF
-
15
-
ns
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
Vos = 25V
f = 1 MHz
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 225V
td(on)
Rise Time
10 = 2.5A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
10
40
25
ns
ns
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
-
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 4.0A)
VSO
-
1.0
1.3
-
460
4.5
-
Continuous Source Current
IS
Reverse Recovery Time
(Is =4.5A, dls/dt =100A/psec, Tc
trr
= 125°C)
-
ORR
-
4.0
A
16
A
Volts
ns
pC
'Pulse Test: Pulse Width $ 300 /JS, duty cycle $ 2%
2.4
lOa
BO
60
40
~
20
0;
~
liE
10
...z
6
:!
w
B
4
.\
0;
gs
u
2
z
:;;:
1.0
O.B
:scO. 6.,.L-
"-
..........
,
...
~
1\
. Y/
.
../
" .......
....
"'-
"
SI~G~;:o~LSE
11
:m~~~
...........
2.0
I--- r-
I
~
6 B 10
20
40 60 80 lOa
200
Vas' DRAIN-SOURCE VOLTAGE IVOL TSI
1.6
liE
~ 1.4
ioo!s
~ 1.2
I,l.
>'"
o
:l:
~
.1'0~S
i'l
I I
0;
--
1.0
,./
O.B
0.6
/
/
./
l.B
laps
.........
r-....
~
C
4
,
"
I--- r-
/ ' VRnSION)
N
"
0.4
O. 1
1'-, .......
""~ ,'""""- ~, ~ "
OPERATION IN THIS AREA
-MAY BE LIMITED BY RnSION)
O. 2
I'....
~
I
I
1
1
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 2.5 A, VGS = 10V
VGS(TH) CONDITIONS: 10 = 250"A, VOS = VGS
I
2.2
......... V
1-
0.4
,
/'
V
---/
./'"
-:::r~
~
tOOms
r
0.2
a
400 600 1000
-40
a
40
80
120
160
T J , JUNCTION TEMPERATURE I'CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
228
IRF840,841
D84ER2,R1
~D·~~
SAMPERES
500, 450 VOLTS
ROS(ON) = 0.S5 n
FIELD EFFECT POWER TRANSISTOR
This series of N-:Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good lin'ear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
'19014'S3)rt
.17014.32)
-.----j
.26516.73)
.24516.22)
Features
+
/
: ::~g:~::DIA.
• No secondary breakdown - Excellent ruggedness
~
~.3
TERM.l
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
.220(5.59)
--.:....i.
.006(0.15) .
.001(0.025)
.500112.7)MIN.
.05511.39)
.04511.14)
.027(0.69)
.107(2.72)
.OS712.21)
.11hr.l05(2.67)
~ •. 09512.41)
.g55!1.39)--!
. 45(1.14)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
~
TERM.3
.0331~.S4)
• Excellent thermal stability - Ease of paralleling
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T C = 25° C
@TC= 100°C
Pulsed Drain Current(l)
)
..jf'...~III,,"H--,
TERM.2
CASE
TEMPERATURE
REFERENCE
OINT
.35519.02)
.325IS.25)
• Ultra-fast switching - Independent of temperature
maximum ratings (T C = 25° C)
•
....-+---i.----fr- i--...,
• Polysilicon gate - Improved stability and reliability
:g~~g :~~\
.
1:=
.21015.33)
.19014.S2)
.021(0.53)
.01510.38)
(unless otherwise specified)
IRF840/084ER2
500
500
8
5
32
±20
125
1.0
IRFS41/0S4ER1
450
450
8
5
32
±20
125
1.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
1.00
80
1.00
80
°CIW
°CIW
TL
260
260
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
229
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
500
450
-
-
-
Volts
-
250
1000
IlA
IGSS
-
±500
nA
VGS{TH)
2.0
-
4.0
Volts
10{ON)
B
-
-
A
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 IlA)
IRFB40/DB4ER2
IRFB41/DB4ER1
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV. TC = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p,A)
Tc
=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 4A)
ROS{ON)
-
0.75
0.85
Ohms
gfs
2.B
3.5
-
mhos
Ciss
-
1400
1600
pF
190
350
pF
28
150
pF
-
20
-
ns
20
-
ns
Forward Transconductance
(VOS = 10V, 10 =4A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
lei (on)
VOS = 225V
Rise Time
10 = 4A, VGS = 15V
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.) = 100)
tr
=500, RGS =12.50
td{off)
tf
60
30
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = BA)
VSO
Reverse Recovery Time
(Is = BA, dls/dt = 100A/llsec, Tc = 125°C)
trr
ORR
-
-
B
A
32
A
0.9
2.0
Volts
-
520
6.4
-
pC
ns
'Pulse Test: Pulse width::; 300 p.s, duty cycle::; 2%
2.4
100
BO
60
40
iii
,
20
II:
~
~
!Z...
II:
II:
::>
u
:
2
<1 1.0
15
v
4
z
A
\
10
v/
~\'
\
O. B r- OPERATION IN THIS AREA
6 r-MAY BE LIMITEO BY ROSIONI
O. 4
o.
2
O. 1
-
PU~SE
SINbLE
Tc=2SoC
r
~
~
1'-,
c
~
'"'-
I'-.
10.,
1 0.,
1
.......
..........
"- , "~I"
, ........
"
I
4
I"..
........
~
1.8
~
a:
~
1.6
:::;
X
..1
~
1m,
"
~
.....
cO.
-
,
~[/
1.4
1.2
~ O.B
z
lym'[_
~
l~O~'
0.6
II:
0.4
DlcT
O. 2
IRF841/D84ER~_
IRF8401D84ER2 ---i
6 8 10
20
40 60 80100
200
V OS ' DRAIN-SOURCE VOLTAGE (VOLTS)
o
400 600 1000
r---
1.0
z
1/
f-
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 4.0 A, VGS = 10V
2.0 ~ VGS(TH) CONDITIONS: 10 = 250.A, VOS = VGS
2.2
-40
-- -
......... .......
./
/
~
ROSIONI
V
V
V
o
V
I'
40
r--
so
r--:::~
120
-
160
T J , JUNCTION TEMPERATURE ('C)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
230
~D~~LF
IRF842,843
7 AMPERES
500, 450 VOL TS
ROS{ON) = 1.1 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
.404(10.26)
.38019.65)
11
.116(2.95)
2. 79 )
:1;g\::~;\rt
.055(1.39)
.048(1.221
1
.--
.265(6.731
.24516.221
Features
CASE
S
REFERENCE
OINT
.35519.021
.32518.251
~
• No secondary breakdown - Excellent ruggedness
130133)
~.
• Ultra-fast switching - Independent of temperature
TERM.l
• Voltage controlled - High transconductance
TERM.2
• Low input capacitance - Reduced drive requirement
TERM.3
.0331~.841
.02710.691
• Excellent thermal stability - Ease of paralleling
.055(1.391
1f;'~IIII'!i+--,
.I!--'
~591
.00610.151
.00110.025)
'.""1"'' '
.1~.10512.671
.09512.41)
.045(1.141~ ~
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ Tc = 25°C
@Tc= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
•
.t---+--I---..-."I--..........., TEMPERATURE
• Polysilicon gate - Improved stability and reliability
maximum ratings (TC =25°C)
.
.21015.33)
.19014.82)
.10712.72)
.087(2.21)
.021(0.531
.01510.381
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRF842
500
500
IRF843
450
450
UNITS
Volts
Volts
A
A
A
Volts
Watts
7
7
4
28
±20
125
1.0
4
28
±20
125
1.0
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
1.00
80
1.00
80
°C/W
°C/W
TL
260
260
°C
10
10M
VGS
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
231
= 25° C) (unless otherwise specified)
electrical characteristics (T c
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
500
450
-
-
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRF842
IRF843
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
loss
-
-
-
-
250
1000
pA
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
7
-
-
A
ROS(ON)
-
1.0
1.1
Ohms
gfs
2.8
3.5
-
mhos
Ciss
-
1400
1600
pF
190
350
pF
28
150
pF
-
20
ns
60
-
30
-
Is
-
-
7
A
ISM
-
-
28
A
VSO
-
0.8
1.9
Volts
trr
-
520
6.4
-
Gate-Source Leakage Current
(VGS =±20V)
IGSS
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS = 10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =4A)
Forward Transconductance
(VOS = 10V, 10 =4A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS
=25V
Coss
C rss
=1 MHz
switching characteristics*
Reverse Transfer Capacitance
f
'. Turn-on Delay Time
=225V
=4A, VGS =15V
VOS
Rise Time
10
td(on)
tr
=500, RGS =12.50 td(off)
Fall Time
tf
(RGS (EQUIV.) =100)
source-drain diode ratings and characteristics*
Turn-off Delay Time
RGEN
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is
=7A)
Reverse Recovery Time
(Is =8A, dls/dt =100AIJlsec, Tc
=125°C)
20
ORR
ns
ns
ns
ns
pC
'Pulse Test: Pulse Width :5 300 p.s, duty cycle :5 2%
2.4
100
80
80
2.2
40
" ::x
~ 20
II:
w
i...
I.
10
~
zw
4
§
2
II:
u
//
z
;;: 1.0
15
C
-
"
/
\/
\
'"""
..........
O. 2 ' O. 1
.......
I"-.
"
r.... r'-.
:-.".'"
'ro-
......
PU~SE
SINbLE
T =2S.C
J
J
4
B 10
20
40
~. 1.8
~
~
1
..........
.""
......
1.6
II:
~
%
1~'
1.4
$;
1.2
>'"
a
1.0
z
CJ
2
0.1
.......
f"'-..
"Y
cr:
cr:
<
cr:
,-
,-
\
\
.......
~
"
C
.F
OPERATION IN THIS AREA
MAY BE LIMITED BY RaSIONI
SINGLE PULSE
I
",
.,
I -1-
TA =25°C
.01
0.1
1.0
10.0
2.2
"
..........
.......
2.4
1
.....
1OO~S
,
,
,
c
~
:::;
~
cr:
1ms
~
1Oms
"
- I RFDll0/DB2BL2
IRFDlll/DB2BK2
-
r-.
1.4
"
1.0
~
cr:
I
I
I
I
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 0.8 A, VGS = 10V
VGS(TH) CONDITIONS: 10 250~A, VDS VGS
=
=
. . . .V
. / .;' RaSIONI
1.6
1.2
<..z
I
1.8
2
1OOms
-
2.0 -
~
~
-
O.B
0.6
0.4
-- - -/'"
./
t-- . /V
~
V
--
r-.:... .
VGSITHI-
0.2
0C
-40
100
Vos. DRAIN-SOURCE VOLTAGE (VOLTS)
40
BO
120
160
T J. JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
234
~D~LS~
IRFD112,113
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
• Polysilicon gate -
DRAIN
Improved stability and reliability
• No secondary breakdown • Ultra-fast switching • Voltage controlled -
W-'
A
I
'T
I-- ~51g:)--.I
I MAX. I
(3.04)
0.120
0.15
(3.81)
I-----j;
(o.~ ~
0.040 (1.02)
Reduced drive requirement
Ease of paralleling
0.15
(3.81)
maximum ratings (T A = 25 0 C)
SOURCE
GATE
-L
High transconductance
• Excellent thermal stability -
O
~0.245 (6.22)~
Excellent ruggedness
Independent of temperature
• Low input capacitance -
0.8 AMPERES
100,60 VOLTS
RDS(ON) = 0.8 il
~Ir--
0.300
I
0.022
r(7.62)'i
0.100
1(2.54)1
(unless otherwise specified)
IRFD112
100
100
0.80
0.54
6.4
±20
1.2
9.6
IRFD113
60
60
0.80
0.54
6.4
±20
1.2
9.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
mW/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(l)
R(JJA
105
105
°C/W
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
TL
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ TA = 25°Cll)
@ TA = 100°C(1)
Pulsed Drain Current l2)
Gate-Source Voltage
Total Power Dissipation @ T A = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
(1) Oevice mounted to vertical pc board in free air with drain lead soldered to 0.20 in 2 minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
235
electrical characteristics (T A = 25° C)
I
(unless otherwise.specified)
.CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
250
1000
pA
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
0.8
-
-
A
ROS(ON)
-
0.60
0.80
Ohms
9fs
0.56
0.75
-
mhos
Ciss
-
145
200
pF
65
100
pF
20
25
pF
-
15
-
ns
off characteristics
Drain-Source. Breakdown Voltage
(VGS =OV, 10 = 250 pA)
IRFD112
IRFD113
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV, TA = 25°C)
(VOS = Max Rating, x 0.8, VGS =OV, TA = 125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
IGSS
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 J.LA)
TA
=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =0.8A)
Forward Transconductance
(VOS =10V, 10 =0.8A) .
dynamic characteristics
Input Capacitance
VGS
Output Capacitance
VOS
Reverse Transfer Capacitance
f
=OV
=25V
Coss
C rss
=1 MHz
switching characteristics*
Turn-on Delay Time
VOS
=30V
td(on)
=O.SA, VGS = 15V
=50n, RGS = 12.5n
(RGS (EQUIV.) = 10n)
Rise Time
10
Turn-off Delay Time
RGEN
Fall Time
tr
td(off)
tf
15
30
10
ns
ns
ns
source-drain diode ratings and characteristics*
IS
-
0.8
A
-
-
ISM
6.4
A
VSO
-
0.8
2.0
Volts
trr
ORR
-
90
0.2
-
ns
pC
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(TA = 25°C, VGS =OV, Is
=O.SA)
Reverse Recovery Time
(IS = 1.0A, dis/dt = 10QAlps, TA
=125°C)
::s 300 Ils, duty cycle ::s 2%
'Pulse Test: Pulse width
10
2.4
,
13a:
~
~'" "
,
1
~
...z
"
w
a:
a:
"z 0.1
«
a:
","
c
_0
.....
,
......
.......
.........
' .....
I
I
cw
N
.....
::;
~ms
1.4
"
>
c
z
.....
«
lOOms
'-
Z
g
IRFD112
IAFD113
1!l
a:
,/ ,
-
1.2
1.0
O.B
0.6
.....
10.0
V
ROSIONI
.",.,
1 -~
0.4
..........
I
1.0
~
51
10ms
.01
0.1
1.6
%
-'
I.B
x..
251'5
-- -- -I--
..... ".,
_V
V
r---
VGS(TH)-
r--
0.2
DC
-40
100
o
40
80
120
160
T J • JUNCTION TEMPERATURE I'CI
VOS' DRAIN-SOURCE VOLTAGE (VOL TSI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VOSITHI VS. TEMP.
236
IRFD120,121
D82CL2,K2
~D~[P~
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
1.3 AMPERES
100,60 VOLTS
RDS(ON) = 0.3 n
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
• Polysilicon gate - Improved stability and reliability
O
~0.245
• No secondary breakdown - Excellent ruggedness
SOURCE
GATE
1-'
A
(6.2211
I--f5~:I---l
I MAX. I
I
• Ultra-fast switching - Independent of temperature
~
• Voltage controlled - High transconductance
-T
(3.041
0.120
• Low input capacitance - Reduced drive requirement
0.15
(3.8,1
0.040 (1.021
• Excellent thermal stability - Ease of paralleling
0.15
~I
61
0.022(0.5-1
0.300---1
r-~ (7.62)
I---±
o.,oo~~
(2541
.
(3.81)
maximum ratings (TA = 25° C)
(unless otherwise specified)
IRFD120/D82CL2
100
100
1.3
0.85
5.2
±20
1.0
8
IRFD121/D82CK2
60
60
1.3
0.85
5.2
±20
1.0
8
UNITS
Volts
Volts
A
A
A
Volts
Watts
mW/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(1)
R8JA
125
125
°CIW
Maximum Lead Temperature for Soldering
Purposes: 'h" from Case for 5 Seconds
TL
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current @TA = 25°C(1)
@TA= 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power DiSSipation @ T A = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
(1) Oevice mounted to vertical pc board in free air with drain lead soldered to 0.20 in 2 minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
237
=25
electrical characteristics (TA
I
C)
0
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 Jl.A)
IRFD120lD82CL2
IRFD121/D82CK2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TA = 125°C)
loss
-
250
1000
Jl.A
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
1.3
-
-
A
ROS(ON)
-
0.22
0.30
Ohms
9fs
.63
1.0
-
mhos
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 J.LA)
TA = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
StatiC Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.6A)
Forward Transconductance
'. (VOS = 10V, 10 = 0.6A)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
-
410
600
pF
Output Capacitance
VOS = 25V
-
160
400
pF
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
-
40
100
pF
-
15
-
ns
30
-
ns
25
ns
10
-
switching characteristics*
Turn-on Delay Time
VOS = 30V
td(on)
Rise Time
10 = 0.6A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(TA = 25°C, VGS = OV)
Is=1.3A
Reverse Recovery Time
(Is = 1.3A, dis/dt = 100AlJl.s, TA = 125°C)
Is
-
-
1.3
A
ISM
-
-
5.2
A
VSO
-
0.8
2.5
Volts
trr
-
75
0.7
-
ns
Jl.C
-
ORR
'Pulse Test: Pulse width::; 300 p.s, duty cycle::; 2%
10
""
~
Ii
~
~
Q
~
\
1
" "- "
I"
'r"\.
OPERA~~N
IN THIS AREA
MAY BE LIMITED BY ROS(ON)
TA =2S'C
0.2
0.4 0.60.81.0
1ms- r--
4
6 810
""
20
f--
2.0
f--
~
1.8
~
a:
~
1.6
:;
I'..
"
"
2.2
ROSIONY
1.4
;;
10ms
r-..
~
1.2
"
1.0
~
-
z
~ O.B
z
1'..-
....
CONDITIONS:
ROS(ON) CONDITIONS: 10 =0.6 A, VGS = 10V
VGS(TH) CONDITIONS: 10 = 250pA, VOS = VGS
c
lOOms
I
I I I
-SINGLE PULSE
.01 0.1
....
~
....
2.4
100"s
" i'...
=
0.1 -
-
10"S
i'
,
\
"
,
°S 0.6
i--IRF0120/082CL2
i--IRF0121/0 82CK2
a:
--- ....--- r-
~
1-
./
~GSITHI f - -
r--
~
0.4
0.2
IDe
40 6080100
r-
. . .V
200
o
400
VOS, ORAIN·SOURCE VOLTAGE (VOLTS)
-40
40
80
120
160
TJ,JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
238
~o~[F~
IRFD122,123
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
• Polysilicon gate - Improved stability and reliability
1
1-'
A
I-- ~51~:)---I
I
-----1-
• Voltage controlled - High transconductance
-T
MAX.
I
(3.04)
0.120
• Low input capacitance - Reduced drive requirement
0.15
(3.81)
0.040 (1.02)
• Excellent thermal stability - Ease of paralleling
0,15
(3.B1)
25° C)
(6.22)
SOURCE
GATE
I
• Ultra-fast switching - Independent of temperature
=:=
O
~O.245
• No secondary breakdown - Excellent ruggedness
maximum ratings (TA
1.1 AMPERES
100, 60 VOLTS
RDS(ON) = 0.4 n
~Ir--
0.300
I
0.022
r-(7,62)'i
(o,~
I--t
0,100
~
1(2,54)1
(unless otherwise specified)
VGS
Po
IRFD122
100
100
1.1
0.70
4.4
±20
1.0
IRFD123
60
60
1.1
0.70
4.4
±20
1.0
8
8
UNITS
Volts
Volts
A
A
A
Volts
Watts
mW/oC
TJ. TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(')
R8JA
125
125
°CIW
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
TL
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T A = 25° C(l)
@TA = 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power Dissipation @TA = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VOSS
VOGR
10
10M
thermal characteristics
(1) Oevice mounted to vertical pc board in free air with drain lead soldered to 0.20 in 2 minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
239
=25° C) (unless otherwise specified)
electrical characteristics (TA
I
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
-
250
1000
JiA
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
1.1
-
-
A
ROS(ON)
-
0.30
0.40
Ohms
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 JiA)
IRFD122
IRFD123
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV, TA =25°C)
(VOS = Max Rating, x 0.8, VGS =OV, TA = 125°C)
loSS
Gate-Source Leakage Current
(VGS =±20V)
IGSS
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 f.J.A)
TA
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =0.6A)
Forward Transconductance
(VOS =10V, 10 =0.6A)
gfs
.63
1.0
-
mhos
Ciss
-
410
600
pF
160
400
pF
40
100
pF
-
15
-
ns
dynamic characteristics
Input Capacitance
VGS
Output Capacitance
VOS
Reverse Transfer Capacitance
f
=OV
=25V
Coss
C rss
=1 MHz
switching characteristics*
=30V
Turn-on Delay Time
VOS
Rise Time
10
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.)
td(on)
=0.6A, VGS = 15V
tr
= 500, RGS = 12.50
30
ns
-
25
-
1.1
A
ISM
-
4.4
A
VSO
-
0.6
2.3
Volts
trr
-
75
0.7
-
ns
JiC
td(Off)
=100)
tf
10
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
Is = 1.1A
Diode Forward Voltage
(TA =25°C, VGS =OV)
Reverse Recovery Time
(Is = 1.3A, dis/dt =100AlJis, TA
= 125°C)
ORR
'Pulse Test: Pulse width:::; 300 I1S, duty cycle:::; 2%
10
2.4
k "'1
, ,
i
I
z
~o
\'
\
0.1
'"
l\
""
i'o,
"
"-
"
~
~
i'..
1m.
i'o
I
1
4
6
8 10
50
10ms
20
'" ,
40
I
I
I
I
I
CONDITIONS:
RDS(ON) CONDITIONS: ID = 0.6 A, Vas = 10V
VGS(TH) CONDITIONS: ID = 250pA, Vos = VGS
1.8
RoSI0o/
1.6
1.4
ti
1.2
"
1.0
~
t'-.
t-...
I
~
~
~
I
:::i
0:
"r-..
SINGLE PULSE
TA = 25°C
lOOps
Q
""'- i'..
2
100ms
OPERATION IN THIS AREA :~ IRF0122
MAY BE LIMITED BY ROS(ON)
IRFOI23_
9
.01
i'o
I
II2.0
2.2
~ O.B
z
~
0.6
0:
1- -- - -r--
_V
/""
V
r-~~ I-
0.4
0.2
~,
BO BO 100
o
200
-40
o
40
BO
120
160
T J • JUNCTION TEMPERATURE 1°C)
VDS. DRAIN-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
240
IRFD1Z0,1Z1
D82AL29K2
~[R3D~ [F~lr
0.5 AMPERES
100, 60 VOLTS
RDS(ON) = 2.4 !1
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEl
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
• Polysilicon gate - Improved stability and reliability
SOURCE
GATE
~0.245 ~
1--'
A
• No secondary breakdown - Excellent ruggedness
(6.22)
I
-L
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
-T
I-- f5'~~)-..J
I
MAX.
I
(3.04)
0.120
• Low input capacitance - Reduced drive requirement
0.15
(3.81)
I---j;
(O.~ ~
0.040(1.02)
• Excellent thermal stability - Ease of paralleling
0.15
(3.81)
maximum ratings (TA
O
~Ir-r--
I
)·i
0.300
C7 .62
0.022
0.100
1(2.54)1
=25° C) (unless otherwise specified)
IRFD1Z0/D82AL2
IRFD1Z1/D82AK2
100
100
0.50
0.31
4.0
±20
1.2
9.6
60
60
0.50
0.31
4.0
±20
1.2
9.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
WIDe
TJ, TSTG
-55 to 150
-55 to 150
DC
Thermal Resistance, Junction to Ambient
RUJA
105
105
DCIW
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
TL
300
300
DC
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!1
Continuous Drain Current @ T A = 25 DC(1)
@TA= 100DC
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power Dissipation @ T A = 25 DC
Derate Above 25DC
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
(1) Oevice mounted to vertical pc board in free air with drain lead soldered to 0.5 in. minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
241
electrical characteristics(T c
=25° C) (unless otherwise specified)
ISYMBOL
MIN
TYP
MAX
UNIT
100
60
-
-
Volts
-
-250
1000
pA
IGSS
-
±500
nA
TA = 25°C
VGS(TH)
2.0
-
4.0
Volts
10 = 0.25A
10 = 0.50A
10 = 0.25A, TA = 125°C
VOS(ON)
-
0.6
Volts
-
0.55
1.10
0.90
ROS(ON)
-
2.2
2.4
Ohms
9fs
-
0.2
-
mhos
Ciss
-
36
70
pF
Coss
C rss
-
20
30
pF
-
7
10
pF
-
6
ns
7
-
CHARACTERISTIC
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
BVDSS
IRFD1Z0/D82AL2
IRFD1Z1/D82AK2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TA = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
-
~
on characteristics*
Gate Threshold Voltage
\ (VOS = VGS, 10 = 250}LA)
Drain Source On-State Voltage
(VGS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.25A)
Forward Transconductance
(VOS = 10V, 10 = 0.25A)
-
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
f = 1 MHz
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
10 = 0.25A, VGS = 15V
Turn-off Delay Time
RGEN = 50.0, RGS = 12.5.0
Fall Time
(RGS (EQUIV.l = 10.0)
td(on)
tr
td(off)
tf
6
12
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
-
-
0.5
A
-
4.0
A
0.9
1.5
Volts
65
-
ns
Pulsed Source Current
ISM
-,
Diode Forward Voltage
(TA = 25°C, VGS = OV, Is = 0.5A)
VSO
-
Reverse Recovery Time
(Is = 0.5A, dls/dt = 100Alps, VOS = 40V Max., TA = 125°C)
trr
·Pulse Test: Pulse width ::5 300 p.s, duty cycle ::5 2%
10,1
f~
2-4
""
........
1,0
",,-
I
~
"
'-9
. .x...
....
"
"'-
~
i'o.
I"
"
"-
"
;
.""'-
"
" 1"- "
,
"-
"'-
"
OPERATION IN THIS AREA
,I- MAY BE LIMITED BY ROS(ON)
, "-SINGLE PULSE
'TA o 2S'C
J
]
"j
,01
1
10
20
50
"'-
J
1 ms
-
"
~
i'- IRF01Zl/082AK2
r2~
-
IRFrZO/082iL2 100ms
I-
I
I
I
I
I
CONDITIONS:
ROS(ON) CONOITIONS: 10 16 A. VGS = 10V
VGS(TH) CONOITIONS: 10 250~A, VOS VGS
=
=
=
ROS(ON)/, , /
",//
1,4
1-2
1,0
~
10ms
2,0
I
1,6
~
""'"
"-
u
i
lOO~S
"I'"
"'" "-"""'i'o.. 'i'o..
0,1
10~S
I
2,2
0,8
----
-r-- r--
I0,6
f-"
-
.... /"'"
--
....1--
r---
0,4
-
--
VGS(TH)
-....
0,2
DC
100
200
500
-40
VDS. DRAIN·SOURCE VOLTAGE (VOLTS)
o
40
80
120
160
TJ,JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROS(ON) AND VGS(TH)VS, TEMP.
242
~D~·~~U
IRFD1Z2,1Z3
0.5 AMPERES
100, 60 VOL1S
ROS{ON) = 2.4 il
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
• Polysilicon gate - Improved stability and reliability
~0.245
• No secondary breakdown - Excellent ruggedness
SOURCE
GATE
~
W-.
A
(6.22)
,
I- ~5~g:)-..J
I
• Ultra-fast switching - Independent of temperature
I
----L-
• Voltage controlled - High transconductance
MAX.
I
0.120
(3.04)
-T
• Low input capacitance - Reduced drive requirement
0.15
13.81)
0.040(1.02)
• Excellent thermal stability - Ease of paralleling
0.15
(3.81)
maximum ratings (TA
O
~Ir--
0.300
I
0.022
10.~
I--X
0.100
~
.
1(2.54)1
r-(7.62)·,
=25° C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current@TA = 25°C(1)
@ T A = 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power Dissipation @ T A = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
IRF01Z2
100
100
.40
.25
3.2
±20
1.0
9.6
IRF01Z3
60
60
.40
.25
3.2
±20
1.0
9.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JA
105
105
°C/W
h
300
300
°C
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
(1) Oevlce mounted to vertical pc board in free air with drain lead soldered to 0.5 in. minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
243
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
ISYMBOL I
MIN
TYP
MAX
UNIT
100
60
-
-
Volts
-
-
250
1000
f1A
IGSS
-
-
±500
nA
TA=25°C
VGS(TH)
2.0
-
4.0
Volts
10 = 0.25A
10 = 0.50A
10 = 0.25A, TA = 125°C
VOS(ON)
0.55
1.10
0.90
0.6
Volts
ROS(ON)
-
3.0
3.2
Ohms
9fs
-
0.2
-
mhos
-
36
70
pF
20
30
pF
7
10
pF
-
6
-
ns
CHARACTERISTIC
off characteristics
IRFD1Z2
IRFD1Z3
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 f1A)
BVDSS
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TA = 25°C)
(V OS = Max Rating, x 0.8, VGS = OV, T A = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
-
on characteristics*
Gate Threshold Voltage
(V OS = VGS, 10 = 25OIlA)
Drain Source On-State Voltage
(VGS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.25A)
Forward Transconductance
(V OS = 10V, 10 = 0.25A)
-
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 30V
td(on)
Rise Time
10 = 0.25A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
6
-
ns
12
-
ns
7
-
ns
-
-
0.5
A
-
3.2
A
-
0.9
1.5
Volts
65
-
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(TA = 25°C, VGS = OV, IS = 0.5A)
VSO
Reverse Recovery Time
(Is = 0.5A, dls/dt = 100A/f1s, VOS = 40V Max., TA = 125°C)
'Pulse Test: Pulse width
trr
:s 300 {1s, duty cycle:S 2%
2.4
10
2.2
_,
I
I COND~TIONS: I
ns
,
I
=15 A, VGS =10V
VGSITH) CONDITIONS: 10 =250"A, VOS =VGS
ROSION) CONDITIONS: 10
2.0 -
"
1.0
"'"
)<..
/'
0.1
-
"-
/'/'
/'
'-
'"
'""'"
"'"
'"
""-
Ty
I
"-
1.8
:i!
1.6
ROSION) . /
a:
0
1.4
Z
""-
~
1.2
:--r-- r-
0
1 ms
>
0
1.0
'"Z-
0.8
11
06
Z
,..........
"-
"-
,""-
.01
20
a:
'-IRF01Z3
"'- ""-
-i
0
10ms
50
IRF!'Z2
100ms
0.4
V
./'
::I;
100l1S
~
25°C
10
fil
N
'-
1'-
OPERATION IN THIS AREA
MAY BE LIMITED BY ROS(ON)
I- SINGLE PULSE
"'" "- "'"
/'
---
.--- V-
.....V
.....V
r--
-
t-
VGSITH)
r--
-
0.2
DC
100
200
-40
500
40
80
T J,JUNCTION TEMPERATURE
Vos. DRAIN·SOURCE VOLTAGE (VOLTS)
120
160
eC)
TYPICAL NORMALIZED ROS(ON) AND VaS(TH)VS, TEMP.
MAXIMUM SAFE OPERATING AREA
244
I RFD21 0,211
D82BN2,M2
~~D~[P~U
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
• Polysilicon gate - Improved stability and reliability
GATE
1
1-'
A
(6.22)
1--~51~:)......(
I
~
• Voltage controlled - High transconductance
-T
MAX.
I
(3.04)
0.120
• Low input capacitance - Reduced drive requirement
0.15
(3.81)
0.040(1.02)
• Excellent thermal stability - Ease of paralleling
0.15
(3.81)
Drain-Gate Voltage, RGS =1Mil
Continuous Drain Current @ T A
@ TA
Pulsed Drain Current(2)
SOURCE
I
• Ultra-fast switching - Independent of temperature
RATING
Drain-Source Voltage
O
~0.245
• No secondary breakdown - Excellent ruggedness
maximum ratings (TA = 25 0 C)
0.6 AMPERES
200, 150 VOLTS
RDS(ON) = 1.5 il
~Ir--
0.300
I
0.022
(O.~
I--±
0.100
~
1(2.54)1
r--(7.62)·,
(unless otherwise specified)
SYMBOL
VOSS
IRFD210/D82BN2
200
IRFD211/D82BM2
150
150
0.6
0.35
UNITS
Volts
Volts
10M
200
0_6
0.35
2_5
VGS
Po
±20
1.0
2.5
±20
1.0
A
A
A
Volts
Watts
8
8
mW/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(1)
ROJA
125
125
°CIW
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
h
300
300
°C
= 25°C(1)
=100°C(1)
Gate-Source Voltage
Total Power Dissipation @ T A =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
VOGR
10
thermal characteristics
(1) Device mounted to vertical pc board in free air with drain lead soldered to 0.20 in 2 minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
245
electrical characteristics (T A = 25° C)
(unless otherwise specified)
CHARACTERISTIC
1 SYMBOL 1
MIN
TYP
MAX
UNIT
BVDSS
200
150
-
-
Volts
-
250
1000
pA
IGSS
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
On-State Drain Current
(VGS = 10V, VOS = 10V)
10(ON)
0.6
-
-
A
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.3A)
ROS(ON)
-
1.1
1.5
Ohms
gfs
0.35
0.4
-
mhos
I
.1
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250/JA)
IRFD210/DS2BN2
IRFD211/DS2BM2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, TA = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 J.l.A)
TA = 25°C
Forward Transconductance
(VOS = 10V, 10 = 0.3A)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
-
120
150
pF
-
40
SO
pF
-
10
25
pF
-
5
ns
10
-
-
0.60
A
switching characteristics*
Turn-on Delay Time
VOS = 90V
td(on)
Rise Time
10 = 0.3A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
15
10
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(TA = 25°C, VGS = OV)
Is = O.60A
VSO
Reverse Recovery Time
(Is = 0.6A, dis/dt = 1OOAIps, T A = 1250 C)
trr
ORR
-
-
2.5
A
O.S
2.0
Volts
-
100
0.75
-
pC
ns
'Pulse Test: Pulse width :5 300 f,lS, duty cycle:5 2%
10
2.4
2.2 _
2.0 -
\,.
~.
I""'-
\~
........
~
=
4
6
6 10
1.6
""-
~
~
1.2
r-- I--
1.0
z
z
o
S 0.6
'" ~"
60 80 100
- ~:=~g~~~g:~~~
/'
ROSIONI
V
1.4
~ 0.8
,/
V
!3
10ms
100ms
40
1.8
~
~
......
20
~
II:
1m.
."00..
'" "
SINGLE PULSE
TA 25'C
c
100••
::;
r-..
i'
1"-"
I
1
......
.........
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
.01
i'
""-
"'-
I'
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 0.3 A, VGS = 10V
VGS(TH) CONDITIONS: 10 = 250~, VOS = VGS
-V
I"""
V
/'
,
-
/'
~~
-I--..-VGSITHI -
II:
r-
0.4
0.2
o
200
VDS, DRAIN·SOURCE VOLTAGE (VOLTS)
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSION) AND VGSITHI VS. TEMP.
246
~~D~[F~
IRFD212,213
FIELD EFFECT POWER TRANSISTOR
This series ofN-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
. supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
• Polysilicon gate -
DRAIN
Improved stability and reliability
1-'
A
• Voltage controlled - High transconductance
.
• Low input capacitance - Reduced drive requirement
0.15
(3.81)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mil
Continuous Drain Current @TA
@TA
Pulsed Drain Current(2)
0
C)
I--- ~5~~:)---I
I MAX. I
-T
(3.04)
0.120
0.15
(3.81)
f.-----j;
(0'5~6) ~~
0.040 (1.02)
• Excellent thermal stability - Ease of paralleling
= 25
SOURCE
GATE
I
---L
Independent of temperature
maximum ratings (TA
O
~0.245 (6.22)~
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching -
0.45 AMPERES
200, 150 VOLTS
RDS(ON) = 2.4 il
~Ir--
0.300
~t7.62)'
--j
0.022
I
0.100
(2.54)
(unless otherwise specified)
IRFD212
200
200
0.45
0.30
1.8
±20
1.0
8
IRFD213
150
150
0.45
0.30
1.8
±20
1.0
8
UNITS
Volts
Volts
A
A
A
Volts
Watts
mW/oC
TJ,TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(1)
RUJA
125
125
°CIW
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
TL
300
300
°C
= 25°C(1)
=100°C(1)
Gate-Source Voltage
Total Power Dissipation @ T A =25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
(1) Oevice mounted to vertical pc board in free air with drain lead soldered to 0.20
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
247
in 2
minimum copper run area.
=25° C) (unless otherwise specified)
electrical characteristics (T A
I
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
200
150
-
-
Volts
-
-
-
250
1000
JlA
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
0.45
-
-
A
ROS(ON)
-
1.6
2.4
Ohms
gfs
0.35
0.4
-
mhos
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 JlA)
IRFD212
IRFD213
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TA = .125°C)
lOSS
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(V OS = VGS, 10 = 250 p.A)
TA=25°C
On-State Drain CUrrent
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.3A)
Forward Transconductance
(VOS = 10V, 10 = O.3A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Ciss
-
120
150
pF
Coss
C rss
-
40
80
pF
-
10
25
pF
td(on)
-
5
-
ns
15
-
ns
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 0.3A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
10
10
ns
ns
source-drain diode ratings and characteristics*
IS
-
-
0.45
A
ISM
-
-
1.8
A
VSO
-
0.7
1.8
Volts
trr
-
100
0.75
Continuous Source Current
Pulsed Source Current
IS =0.45A
Diode Forward Voltage
(TA = 25°C, VGS = OV)
Reverse Recovery Time
(Is =0.6A, dis/dt = 100A/ps, TA = 125°C)
ORR
-
ns
JlC
-
·Pulse Test: Pulse width :5 300 JlS, duty cycle:5 2%
10
2.4
I
I
I
I
I
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 0.3 A. VGS = 10V
2.0 I-- VGS(TH) CONDITIONS: 10 = 250I'A. VOS = VGS
2.2 I--
......
~
i'
I'...
.......
...........
~
'I'-...
4
"- r......
6
aw
1.4
1.2
"
1.0
~
z
'"
........
TA=2So C I
1.0
10ms
1.6
:c~
>
C
z
~
~
100ms
a:
0.6
IRFD212-_
IRFD213_
0.4
~
O. 2
8080~
~
o
_
V
1.8
-:. O. a
I- ~PERATION IN THIS AREA
I-MAV BE LIMITED BV RDS(ON) .......
.01
i'
..............
t-SING~E PULSJ
~
1m.
~.
1\ "-~
\
~
a:
.......
1'0.
'"
c
~
:::;
100",5
,/
-- - -
V
ROSIONI
V
V
/
~
~
-40
o
V
r--
40
-"-- ~
VGSITHI -
80
120
160
TJ • JUNCTION TEMPERATURE (OC)
Vos, DRAIN-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VOSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
248
IRFD220,221
D82CN2,M2
~D~~U
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
0.8 AMPERES
200, 150 VOLTS
RDS(ON) = 0.8 il
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
• Polysilicon gate - Improved stability and reliability
O
SOURCE
GATE
~0.245 ~
• No secondary breakdown - Excellent ruggedness
I'A
(6.22)
I
------L-
• Voltage controlled - High transconductance
-T
MAX.
(3.04)
0.120
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
~Ir-- ---1
0.15
I---j;;"
r-~
6
0.022 (0.5--1
)
0 100
.
(2.54)
0300
(3.61)
I
(3.611
0.040 (1.02)
~(7.62)·
0.15
maximum ratings (TA = 25 0 C)
I--f51g~)-..J
I
• Ultra-fast switching - Independent of temperature
I·
(unless otherwise specified)
IRFD220/D82CN2
200
200
0.80
0.48
IRFD221/D82CM2
150
150
0.80
0.48
VGS
Po
6.4
±20
1.0
8
6.4
±20
1.0
8
mW/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(l)
ROJA
125
125
°C/W
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Second$
TL
300
30b
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ T A = 25°C(1)
@ T A = 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power Dissipation @TA = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VOSS
VOGR
10
10M
UNITS
Volts
Volts
A
A
A
Volts
Watts
thermal characteristics
..
(1) Oevlce mounted to vertical pc board in free air with drain lead soldered to 0.20 m2 minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
249
electrical characteristics (TA = 25 0 C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
200
150
-
-
Volts
-
250
1000
pA
IGSS
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
O.S
-
-
A
ROS(ON)
-
0.6
O.S
Ohms
gfs
0.45
0.7
-
mhos
Clss
-
3S5
600
pF
SO
300
pF
15
SO
pF
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFD220/DS2CN2
IRFD2211DS2CM2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, TA = 125°C)
lOSS
Gate-Source Leakage Current
(VGS = ±20V)
_ on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 ,."A)
TA = 25°C
On-State Drain Current
(VGS = 10V, Vos = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.4A)
Forward Transconductance
(Vos = 10V, 10 = OAA)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = OAA, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(on)
-
15
tr
-
10
td(off)
-
30
10
-
tf
ns
ns
ns
source-drain diode ratings and characteristics*
-
A
ISM
-
O.S
Pulsed Source Current
604
A
Diode Forward Voltage
(TA = 25°C, VGS = OV, Is = O.SA)
VSO
-
O.S
1.S
Volts
trr
-
150
1.2
-
Continuous Source Current
IS
Reverse Recovery Time
(Is = O.SA, dls/dt = 100Alps, TA = 125°C)
~
ORR
ns
pC
·Pulse Test: Pulse width. S 300 /-IS, duty cycle S 2%
10
,
~
II
~
,,'
\
i
1
"
0.1
~/
r-:=::
"
I~
".~
2.4
.'
10",s
,~,
"-
" "'r-..
~
:::;
,
i'..
0.2
"
10ms
4
6 810
1.6
1.4
20
40 6080100
~
1.2
"
1.0
o
en
0.6
c
a:
0.4
~
200
I
I
I
I
/'
/]
/'
ROSIONI
/,V
z
~ 0.6
'''~Tf~ r-.
0.4 0.60.81.0
~
~
-
- -....- ..-
,../
/,"
./
./
r---
V
--
--!G~ -
0.2
~
0.1
f-
)
CONDITIONS:
ROS(ON) CONOITIONS: 10 = 0.4 A. VGS = 10V
VGS(TH) CONOITIONS: 10 = 250pA. VOS = VGS
1.8
II
::
~RF0221/?821M
I I I
2.0
c
lOOps
1m.
I'-
=
f-
a:
"-
SINGLE PULSE
TA 25'C
.01
"-
i'..
"'-
"
OPERATION IN THIS AREA
,MAY BE LIMITED BY ROS(ON)
'1
"-
'-..
)
)
2.2
400
o
-40
o
40
80
. 120
160
TJ • JUNCTION TEMPERATURE ('C)
VDS. DRAIN·SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
250
~~D~~
IRFD222,223
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
O
• Polysilicon gate - Improved stability and reliability
SOURCE
GATE
~0.24516.2211
A 1-'-
• No secondary breakdown - Excellent ruggedness
I.-- ~5'~~)--l
I MAX. I
. I
---l-
• Ultra-fast switching - Independent of temperature
"T
13.04)
0.120
• Voltage controlled - High transconductance
0.15
13.81)
0.040 (1.02)
• Low input capacitance - Reduced drive requirement
~1= 7.6n--,
II
• Excellent thermal stability - Ease of paralleling
0.15
13.81)
maximum ratings (TA = 25 0 C)
0.7 AMPERES
200, 150 VOLTS
RDS(ON) =.1.20
0.300
I
J.----j;
13.30)
1 6
)
0.022 0.5-1
o.,00L
1
12.54)1
(unless otherwise specified)
IRFD222
200
200
0.70
0.40
5.6
±20
1.0
8.0
IRFD223
150
150
0.70
0.40
5.6
±20
1.0
8.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
mW/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(1)
ROJA
125
125
°C/W
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
TL
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
Continuous Drain Current @ T A = 25° C(1)
@ TA = 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power Dissipation @ T A = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
(1) Oevice mounted to vertical pc board in free air with drain lead soldered to 0.20 in 2 minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
251
=25° C) (unless otherwise specified)
electrical characteristics (TA
I
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
200
150
-
-
Volts
-
250
1000
pA
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
IO(ON)
0.7
-
-
A
ROS(ON)
-
0.8
1.2
Ohms
gfs
0.45
0.7
-
mhos
VGS = OV
Ciss
385
600
pF
Output Capacitance
VOS = 25V
300
pF
f = 1 MHz
Coss
Crss
80
Reverse Transfer Capacitance
-
15
80
pF
td(on)
-
15
-
ns
tr
-
10
ns
30
-
CHARACTERISTIC
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFD222
IRFD223
Zero Gate Voltage Drain Current
(V OS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TA = 125°C)
loSS
-
Gate-Source Leakage Current
(VGS = ±20V}
IGSS
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 /LA)
TA=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = O.4A)
Forward Transconductance
(VOS = 10V, 10 = 0.4A)
dynamic characteristics
Input Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = O.4A, VGS = 15V
Turn-off Delay Time
RGEN = 50n, RGS = 12.5n
Fall Time
(RGS (EQUIV.) = 10n)
td(off)
tf
10
ns
ns
source-drain diode ratings and characteristics*
-
A
ISM
-
0.7
Pulsed Source Current
5.6
A
Diode Forward Voltage
(TA = 25°C, VGS = OV, Is = 0.7A)
VSO
-
0.7
1.8
Volts
trr
-
150
1.2
-
Continuous Source Current
Is
Reverse Recovery Time
(Is = 0.8A, dis/dt = 100A/ps, TA
=125°C)
-
ORR
ns
pC
'Pulse Test: Pulse Width :5 300 fJS, duty cycle:5 2%
10
2.4
.......
~
f
"
"
~
...z~
.
a:
a:
::I
u
,,; " l\
Z
~
Q
9
"
"
'"
.01
0.1
0.2
"- ,
,,~
'c;
"'-
o
l00~s
"
'"
...... ~
Q
r-.!.R~021231-
6 8 10
20
1.0
08
*
"~
4
--
1.2
Z .
a:
40 60 80100
I
I
I
I
(
1/
RoS1ONJ,/'
V
2
10ms
IRF0222
I
~
a:
~
~
........
I
1.8
~
I"-
(
t--
CONDITIONS:
ROS(ON) CONDITIONS: ID = 0.4 A. VGS = 10V
2.0 t-- VGS(TH) CONDITIONS: ID = 250"A. VDS = VGS
~
:;
1m•
PULSE
TA=125
.......
........
III
-~SINGLE
I
t'-...
"~
0.1 r--'OPERATION IN THIS AREA
'--MAY BE LIMITED BY ROS(ON)
-I
2.2
lOpS
~.....-
,..---
/'
V
V
I---
V
./
V"
r---
0.6
--
~~ -
0.4
0.2
o
200
-40
o
40
80
120
160
TJ• JUNCTION TEMPERATURE I'C)
VDS. DRAIN·SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
252
IRFD2Z0,2Z1
D82AN2-,_M2
~ffi1DUYAOO ~
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
.o
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
SOURCE
DRAIN
• Polysilicon gate - Improved stability and reliability
(6.221
-L
• Voltage controlled - High transconductance
-T
.
0.15
(3.Bl1
I---j-;
0.022(0·~0.loo~
0.040 (1.02)
• Excellent thermal stability - Ease of paralleling
"
~q-f
r--
0.300
0.15
(3.Bl)
C)
I-- ~5~~~1--I
I MAX. I
(3.041
0.120
• Low input capacitance - Reduced drive requirement
0
1-'
A
I
• Ultra-fast switching - Independent of temperature
=25
GATE
~0.245 ~
• No secondary breakdown - Excellent ruggedness
maximum ratings (TA
0.32 AMPERES
200, 150 VOLTS
ROS(ON) = 5.0 .0.
I
7.62 ) · - - ,
1(2.54)1
(unless otherwise specified)
IRF02Z0/08~N2
VGS
Po
200
200
0.32
0.20
1.5
±20
1.0
IRF02Z1/082AM2
150
150
0.32
0_20
1.5
±20
1.0
8
8
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(l)
R8JA
125
125
°CIW
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
TL
260
260
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M.o.
Continuous Drain Current @ TA = 25°C(l)
_
@ TA = 100°C(l)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power Dissipation @ T A = 25° C(l)
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
UNITS
Volts
Volts
A
A
A
Volts
Watts
thermal characteristics
(1) Device mounted to vertical pc board in free air with drain lead soldered to 0.20 in 2 minimum copper run area.
(2) Repetitive Rating: Pulse width Limited by Max. Junction Temperature.
253
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
ISYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
200
150
-
-
-
Volts
IGSS
-
-
250
1000
JlA
±500
nA
TA = 25°C
VGS(TH)
2.0
-
4.0
Volts
10 = 0.15A
10 = 0.32A
10 = 0.15A, TA = 125°C
VOS(ON)
0.66
1.41
1.05
0.75
Volts
ROS(ON)
-
4.4
5.0
Ohms
9fs
-
0.11
-
mhos
-
37
70
pF
15
25
pF
-
4
8
pF
-
15
-
ns
10
-
ns
-
0.32
A
1.5
A
0.86
1.3
Volts
125
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 JlA)
IRFD2Z0/D82AN2
IRFD2Z1/D82AM2
BVDSS
Zero Gate Voltage Drain Current
(V OS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TA = 125°C)
loss
Gate-Source Leakage Current
(VGS= ±20V)
-
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 1J.1A)
Drain Source On-State Voltage
(VGS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.15A)
Forward Transconductance
(Vos=-10V, 10 = 0.15A)
-
dynamic characteristics
Input Capacitance
VGS= OV
Ciss
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 0.15A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
22
28
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
-
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(TA = 25°C, VGS = OV, Is = 0.32A)
VSO
Reverse Recovery Time
(Is = 0.32A, dls/dt = 100A/Jls, VOS = 80V Max., TA = 125°C)
trr
'Pulse Test: Pulse width:::; 300 p.s, duty cycle:::; 2%
10
8
2.4
6
@
a:
~
1
....
is
0.4
:::l
0.2
Z
:;;:
~
0.1
.OB
~ ~:~
a:
a:
u
-'l
......
\
..........
1\
"
OPERATIO~
......
r-....
..........
~
.....
......
...............
SINGLE PULSE
TA =2SoC
1
~
:,
~
......
'""
10
20
~
-
r-....
'
......
SO
100., -
I--
CONDITIONS:
RDS(ON) CONDITIONS: ID = 15 A. VGS = 10V
VGS(TH) CONDITIONS: ID = 250~. VDS = VGS
1m,
ROStON}
1.6
1.2
"
1.0
z
«i
OB
.
~ 0.6
10m,
a:
-t-IRFD2Z1/D82AM2
0.4
...... '-IRFDJOID82Ar2
lOOms
0.2
100
200
SOO
o
1000
V DS ' DRAIN-SOURCE VOLTAGE IVOLTS)
_..........
1.4
o
,
"
1.8
~
~
I......
~
5
f--
Q
:::;
~
a:
10J.,ls
..........
r-....
......
IN THIS AREA
MAY BE LIMITED BY RDSIONI
.02
,
......
, ,
........
.06
.04
.01
........
i'...
2.2
2.0
:.....-
- ---
-40
.... ~
./
.,.
",.
~
VGStTH} -
o
40
80
120
~
160
T J • JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VOSITHI VS. TEMP.
254
IRFD320,321
D82CQ2.Q1
~o~~
FIELD EFFECT PO'NER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE 4·PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
DRAIN
• Polysilicon gate - Improved stability and reliability
O
~0.245
SOURCE
GATE
~
W-,
A
• No secondary breakdown - Excellent ruggedness
(6.22)
1--~51;:)--I
I
• Ultra-fast switching - Independent of temperature
I
~
• Voltage controlled - High transconductance
MAX.
I
0.120
(3.04)
-T
• Low input capacitance - Reduced drive requirement
0.15
(3.B1)
I--j;;
(o·~o ~
0.040(1.02)
• Excellent thermal stability - Ease of paralleling
0.15
(3.B1)
maximum ratings (TA
0.5 AMPERES
400, 350 VOLTS
RDS(ON} = 1.8 0
~Ir--
0.300
I
0.022
~(7.62)---'
100
11~.54)1
=25° C) (unless otherwise specified)
IRFD321/D82CQ1
350
350
0.5
0.33
2.0
±20
SYMBOL
Voss
IRFD320/D82CQ2
400
VOGR
VGS
Po
400
0.5
0.33
2.0
±20
1.0
8
8
A
Volts
Watts
mW/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient(1)
ROJA
125
125
°CIW
Maximum Lead Temperature for Soldering
Purposes: Ve" from Case for 5 Seconds
TL
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
Continuous Drain Current @TA = 25°C(1)
@TA = 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power DisSipation @ T A = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
10
10M
1.0
UNITS
Volts
Volts
A
A
thermal characteristics
(1) Device mounted to vertical pc board in free air with drain lead soldered to 0.20
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
255
in 2
minimum copper run area.
= 25° C)
electrical characteristics (TA
(unless otherwise specified)
CHARACTERISTIC
I
I· SYMBOL 1
MIN
TYP
. MAX
UNIT
BVDSS
400
350
-
-
Volts
-
-
250
1000
JlA
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
0.5
-
-
A
ROS(ON)
-
1.4
1.8
Ohms
gfs
0.3
0.6
-
mhos
Ciss
-
385
600
pF
70
200
pF
12
40
pF
15
td(off)
tf
-
25
-
ns
tr
-
-
-
0.5
A
2.0
A
0.8
1.6
Volts
200
1.7
-
off characteristics
Drain-Source Breakdown Voltage
I RFD320/D82CQ2
IRFD321/D82CQ1
(VGS =OV, 10 =250 JlA)
. Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, TA =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, TA =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
-
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 /-LA)
TA
=25°C
On-State Drain Current
(VGS ~ 10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.25A)
Forward Transconductance
(VOS =10V, 10 =0.25A)
dynamic characteristics
Input Capacitance
VGS
Output Capacitance
VOS
Reverse Transfer Capacitance
f
=OV
=25V
Coss
C rss
= 1 MHz
switching characteristics*
Turn-on Delay Time
VOS
=175V
td(on)
Rise Time
10 =0.25A, VGS
Turn-off Delay Time
RGEN
= 15V
=50n, RGS =12.50
(RGS (EQUIV.) =10n)
Fa" Time
10
15
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(TA =25°C, VGS =OV, Is =0.5A)
Reverse Recovery Time
(Is =0.5A, dis/dt = 100AIJls, TA = 125°C)
VSO
-
trr
QRR
-
ns
JlC
'Pulse Test: Pulse width :5 300 /ls, duty cycle:5 2%
10
B
6
2.4
2,2
2,0
flia:
~
,/"
~
1
-'"
!... g:: F--i""
2 0.4
w
a:
a:
a
\
0.2
_0
0.1
.08
.06
.04
~
.......
" " "'" '"
"
.........
OPERA+ION IN THIS AREA
MAY BE LIMITED BY ROSIONI
SINGLE PULSE
TA =2SoC
1
10
.......
i'..
.......
~
20
50
100
N
::;
~
100",-
"
...........
.......
,02
,01
"'"
.~
fil
'l'-...
I~
2
;;:
~
'i'.,
200
a:
~
I
%
~ms
1.0
-
-:.. 0, B
bJIRF03211082COI
I11RF032l082C02
a:
/1
0,6
0.4
ROSIONI
/"
1.4
"
"~
/'
=
=
1.6
1.2
o
=
/
z
10m'-
I
I,B
~
~
I
r-r--
CONriITlON~:
I
I
I
ROS(ON) CONDITIONS: 10 0,25 A, VGS 10V
VGS(TH) CONDITIONS: 10 = 250pA, VOS VGS
I
"r
L
r--- -.....
,/""
L
V
/'"
r--- t--
......... ~
-
VGSITHI-
-j--.
r----
100ms
0, 2
I
500
1.000
-40
Vos' DRAIN-SOURCE VOLTAGE IVOL TSI
o
40
so
120
160
T J , JUNCTION TEMPERATURE I'CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VOSITHI VS. TEMP.
256
~D~[P~
IRFF110,111
FIELD EFFECT POWER TRANSISTOR
3.5 AMPERES
100, 60 VOLTS
ROS(ON) = 0.6 D.
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(6.690-9.3961
0.315-0.335
(6.001-6.5091
Features
• Polysilicon gate - Improved stability and reliability
0 nU.....• U
~1
(0.229-0.4571
• No secondary breakdown - Excellent ruggedness
23
it-Il--GATE
SOURCE
-4
0..1.
50-0 -00."'01'6-0.019
(12.701
(0.406-0.4831
• Ultra-fast switching - Independent of temperature
.11--
MIN
0.190-0.210
(4.826-5.3341
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability -
Ease of paralleling
maximum ratings (TC =25° C)
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF110
100
100
IRFF111
60
60
UNITS
Volts
Volts
10
3.5
3.5
A
Pulsed Drain Current(1)
10M
Gate-Source Voltage
Total Power Dissipation @Tc
Derate Above 25° C
Operating and Storage
Junction Temperature Range
VGS
Po
14
±20
15
0.12
14
±20
15
0.12
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
8.33
175
8.33
175
°CIW
°CIW
TL
260
260
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MD.
Continuous Drain Current @ T C = 25°C
=25°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
257
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
250
1000
IlA
IGSS
-
-
±1OO
nA
VGS(TH)
2.0
-
4.0'
Volts
10(ON)
3.5
-
-
A
ROS(ON)
-
-
0.6
Ohms
gfs
0.7
-
-
mhos
-
-
200
pF
100
pF
25
pF
10
-
ns
15
15
-
ns
10
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =2501lA)
IRFF110
IRFF111
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
loSS
Gate-Source Leakage Current
(VGS =±20V)
on characteristics *
. Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =1.5A)
Forward Transconductance
(VOS =10V, 10 =1.5A)
dynamic characteristics
=OV
Ciss
Output Capacitance
VOS =25V
Coss
Reverse Transfer Capacitance
f =1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS =30V
td(on)
Rise Time
10 =1.5A, VGS =15V
tr
Turn-off Delay Time
RGEN =500, RGS =12.50
td(off)
Fall Time
tf
(RGS (EQUIV.) =100)
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Continuous Source Current
-'-
-
VSO
-
trr
-
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =3.5A)
Reverse Recovery Time
(Is =3.5A, dls/dt =100A/llsec, Tc
=125°C)
-
3.5
A
-
14
A
-
2.5
Volts
-
ns
IlC
200
1.0
-
ORR
ns
-
'pulse Test: Pulse Width $ 300 I1S, duty cycle $ 2%
100
80
60
2.4
2.2
40
2.0
6
4
!§
~
a:
u
!
il
D
9
1.0
0.8
0.6
0.4
0.2 _
O. 1
1.0
~
'" " "-'" '" "
i '~
~
I
I
::;
10~s
...
....
/
.........
r-....
=
=
/
t'o.
TC= 25'C
"r-......' 1', .."
:-....
=
R'hJC 8.33 KN/
SINGLE PULSE
OPERAT'ON IN THIS
AREA IS LIMITED
BYRDS(on)
4
6
I"~
,
IRFF111_
IRFF1108 10
20
40
~
1.4
~
"
1m.
~
1.0
08
.
.~
10ms
I'
100ms
~
DC
a:
=
=
./
/'
-
1.2
:ii
o
"~
TJ = 150°C MAX.
1.6
:;:
100lJ s
I
I
1,8
~
a:
I'
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 1.5 A, VGS 10V
VGS(TH) CONOITIONS: 10 250~A. Vas VGS
Q
20
m
I
0.6
,-~
- -"
I-.
~
V'
ROSION,
/
/
V
I"'"--
0.4
r--
--
VGSITH' -
0.2
60 80100
200
400 600
-40
VDS. DRAIN·TO·SOURCE VOLTAGE (VOLTSI
o
40
80
120
160
T J. JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
258
~D~~
IRFF112,113
3.0 AMPERES
100, 60 VOLTS
ROS(ON) = 0.8 0.
FIELD EFFECT ·POWER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
A$
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
--r-----;-,.---;
0.315-0.335
(8.001-8.509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (TC = 25° C)
RATING
Drain-Source Voltage
(unless otherwise specified)
IRFF112
100
IRFF113
60
100
60
UNITS
Volts
Volts
10
3.0
3.0
A
Pulsed Drain Current(1)
10M
Gate-Source Voltage
VGS
Po
12
±20
12
±20
A
Volts
15
0.12
15
0.12
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ReJC
ReJA
8_33
175
8.33
175
°C/W
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
h
260
260
°C
Drain-Gate Voltage, RGS = 1Mo.
Continuous Drain Current @ T C = 25°C
Total Power Dissipation @ T C = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VOSS
VOGR
thermar characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature_
259
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS OV, 10 250 pA)
=
IRFF112
IRFF113
=
Zero Gate Voltage Drain Current
(Vos Max Rating, VGS OV, TC 25°C)
(VOS Max Rating, x 0.8, VGS OV, TC 125°C)
=
=
=
=
=
lOSS
-
--
250
1000
pA
-
IGSS
-
-
±1oo
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
3.0
-
-
A
ROS(ON)
-
-
0.8
Ohms
gfs
0.7
-
-
mhos
-
-
200
pF
100
pF
25
pF
-
10
ns
15
-
10
-
IS
-
-
3.0
A
ISM
-
12
A
VSO
-
-
2.0
Volts
trr
-
200
1.0
-
ns
pC
=
Gate-Source Leakage Current
(VGS ±20V)
=
on characteristics*
Gate Threshold Voltage
(VOS VGS, 10 250 p.A)
=
Tc
=
=25°C
On-State Drain Current
(VGS 10V, VOS 10V)
=
=
Static Drain-Source On-State Resistance
(VGS 10V, 10 1.5A)
=
=
Forward Transconductance
(V OS 10V, 10 1.5A)
=
=
dynamic characteristics
Input Capacitance
=OV
VGS
Ciss
=25V
Coss
=1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS =30V
td(on)
Rise Time
10 =1.5A, VGS =15V
tr
Turn-off Delay Time
RGEN =50n, RGS =12.5n
td(off)
Fall Time
tf
(RGS (EQUIV.) =10n)
source-drain diode ratings and characteristics*
Output Capacitance
VOS
Reverse Transfer Capacitance
f
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc 25°C, VGS OV, Is
=
=
=3.5A)
Reverse Recovery Time
(Is 3.5A, d Is/dt 1OOAIpsec, T C
=
=
=125
0
C)
ORR
15
ns
ns
ns
-
'Pulse Test: Pulse width :5 300 liS, duty cycle:5 2%
2.4
'00
80
60
I
40
2.0
I
I
I
ROS(ON) CONDITIONS: '0
VGS(TH) CONDITIONS: '0
c
~
::;
10"s
.'
, ....
"
....
0
8
6
4
......
..........
~
,
~
I- ~~: :~!i: MAX.
I- R'hJC " 8.33 KJW
...........
o.
,
'.0
4
6
8 '0
20
40
=1.5 A, VGS =10V
=250pA, VOS =VGS
/"
./
1.6
i
~
1.2
"
1.0
~
r'-'ms
1.4
o
.Vi 0.6
c
10ms
L=-"' ~
-.....-
. / I-"""
'"
ROSIONI
/'
V
r-- ~
VGSITHIr-- I--
-
0:
0.4
100ms
0.2
DC
60 80 '00
-r--
z
z
IRFF112_
IRFF113_
AREA IS LIMITED
BY ROS(on)
~
100",5
~
I
1.8
-:.. 0.8
"
I
0:
....
"r........
SINGLE PULSE
02 ,...= OPERATION IN THIS
~
I
CONDITIONS:
2.2
200
400 600
-40
VDS, DRAIN-TD-SOURC~ VOLTAGE (VOLTS)
.0
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
260
~D~~
IRFF120,121
6.0 AMPERES
100, 60 VOLTS
ROS(ON) =0.3 .0.
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-205AF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
..---;-;.---..,
0.315-0.335
(8.001-8.509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maxi mum rati ngs (T C = 25 0 C)
RATING
Drain-Source Voltage
(unless otherwise specified)
Voss
VOGR
IRFF120
100
100
IRFF121
60
60
UNITS
Volts
Volts
10
6
6
A
Pulsed Drain Current(1)
10M
Gate-Source Voltage
Total Power Dissipation @ T C =25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
VGS
Po
24
±20
20
0.16
24
±20
20
0.16
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ROJC
ReJA
6.25
175
6.25
175
°CIW
°CIW
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
TL
260
260
°C
Drain-Gate Voltage, RGS
SYMBOL
= 1M.o.
Continuous Drain Current@Tc
=
25°C
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
261
=25
electrical characteristics (T c
I.
C)
0
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
BO
-
-
Volts
-
-
250
1000
p.A
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
IO(ON)
B.O
-
-
A
ROS(ON)
-
-
0.3
Ohms
gfs
1.35
-
-
mhos·
-
BOO
pF
400
pF
100
pF
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 p.A)
IRFF120
IRFF121
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV, Tc =25°C)
(VOS = Max Rating, x 0.8, VGS= OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 /JA)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS:: 10V, 10 = 3A)
Forward Transconductance
(VOS = 10V, 10 = 3A)
dynamic characteristics
VGS
=10V
VOS =25V
Ciss
-
Output Capacitance
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
-
td(on)
tr
-
20
-
-
B
A
24
A
2.5
Volts
-
230
1.2
-
ns
p.C
Input Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
10 = 3A, VGS = 15V
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.) = 10n)
=50n, RGS =12.5n
td(off)
tf
35
50
35
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =BA)
Reverse Recovery Time·
(Is = BA, dls/dt =100A/p.sec, Tc = 125°C)
VSO
trr
ORR
'Pulse Test: Pulse width:::; 300 JiS, duty cycle:::; 2%
2.4
100
80
60
40
I
2.2
r--
2.0
r--
I
I
I
I
I
CONDITIONS:
RDS(ON) CONDITIONS: 10 = 3 A. VGS = 10V
VGS(TH) CONOITIONS: 10 = 250pA. VOS = VGS
Q
20
i 1:
ia:
§
u
z
~
CI
9
4
2
1.0
0.8
0.6
~ .-'" r.....
,..
..........
r-.......
.......
I".
.....
~
" ""
~
TC = 25'C
TJ = 150'C MAX.
0.4
RthJC = 6.25 KIW
SINGLE PULSE
0.2 ~OPERATION IN THIS
AREA IS LIMITED
BY ROS(on)
O. 1
1.0
4.
6 8 10
.....
.......
~
lOps
::::;
~
100 po
~
.....
1 ms
1.4
~
1.2
'"
>
Q
1.0
In
'r--.
Z
~ 0.8
10ms
.....
2
o
Fi
100ms
0.6
0:
r--.
40
ROSIOy!/'
1.6
0:
IRFFl20_
IRFF12.1_
20
1.8
0.4
I--
DC
60 80 100
-- --
."...
r-- r-~
""..,
/
,...."
r- r--
~~ ....
I--
0.2
200
o
400 800
VDS. DRA'N-TO-SOURCE VOLTAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
- 40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
TYPICAL NORMALIZED RDSIONI AND
2B2
VGSITHI VS.
TEMP.
~~o~[p~
IRFF122,123
5.0 AMPERES
100, 60 VOLTS
ROS(ON) = 0.4 n
FIELD EFFECT PatNER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
...----;-"---;
Features
0.315-0.335
(8.001-8.509)
~
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
(unless otherwise specified)
SYMBOL
VOSS
VOGR
IRFF122
100
100
IRFF123
60
60
UNITS
Volts
Volts
10
5.0
5.0
A
Pulsed Drain Current(1)
10M
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
VGS
Po
20
±20
20
0.16
20
±20
20
0.16
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R8JC
R8JA
6.25
175
6.25
175
°CIW
°CIW
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
TL
260
260
°C
Continuous Drain Current @ T C = 25°,C
thermal characteristics
..
(1) RepetItIve RatIng: Pulse width limited by max. junction temperature.
263
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
250
1000
pA
IGSS
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
5.0
-
-
A
ROS(ON)
-
-
0.4
Ohms
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFF122
IRFF123
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(V OS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 3A)
Forward Transconductance
(VOS = 10V, 10 = 3A)
gfs
1.35
-
-
mhos
VGS = 10V
CisS
pF
Output Capacitance
VOS= 25V
Coss
C rss
400
pF
f = 1 MHz
-
600
Reverse Transfer Capacitance
-
100
pF
-
20
ns
35
-
-
5
A
20
A
-
2.3
Volts
230
1.2
-
ns
pC
dynamic characteristics
Input Capacitance
switching characteristics*
.Turn-on Delay Time
VOS = 30V
'RiseTime
10 = 3.0A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
35
50
ns
ns
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, IS = 5A)
VSO
-
Reverse Recovery Time
(Is = 6A, dls/dt = 100A/psec, Tc = 125°C)
trr
ORR
-
Continuous Source Current
Is
'Pulse Test: Pulse width :5 300 /.IS, duty cycle :5 2%
100
80
60
40
20
(
~
ia:
!!i
U
1~
2.4
2.2
,
2.0 -
~
9
10ps
",
I'
6
4
l'.-.
1.0
0.8
0.6
TC= 25'C
TJ = lSO'C MAX.
0.4
RthJC = 6.25 KIW
SINGLE PULSE
02 --=OPERATION IN THIS
AREA IS LIMITED
BYRDS(on)
I
J
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 3 A. VGS = lOV
VGS(TH) CONOITIONS: 10 = 250pA. VOS = VGS
4,
6
...........
r-..
1.6
ROS(ONY
~
1.2
~'"
1.0
z
'I"-
~ 0.8
z
o
10ms
"
~ 0.6
100ms
0:
,,/
---- :---
V
~
r---
0.4
r-..
40
1.4
;:
1 ms
IRFF1~_
20
~
~
I'
IRFFl23_
8 10
1.8
0:
......
'"
~
:::;
..... lOOps
" "" "
2
0.1
1.0
I
c
k''''
z
Q
I
-
-- --
~GS(THI I - - -
"-
0.2
DC
1-1"-
60 80100
....V
200
o
400 600
MAXIMUM SAFE OPERATING AREA
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('CI
VOs. ORAlN-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
264
~D~[P~
IRFF130,131
FIELD EFFECT POWER TRANSISTOR
8.0 AMPERES
100, 60 VOLTS
ROS(ON) = 0.18!l
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
A$
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350·0.370
(6.690·9.396)
-.-----;-i----j
0.315.().335
(8.001·6.509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25 0 C)
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF130
IRFF131
100
100
60
60
UNITS
Volts
Volts
10
8
8
A
Pulsed Drain Current(1)
10M
Gate-Source Voltage
Total Power Dissipation @ Tc = 25DC
Derate Above 25 DC
Operating and Storage
Junction Temperature Range
VGS
Po
32
±20
25
0.2
32
±20
25
0.2
A
Volts
Watts
W/DC
TJ, TSTG
-55 to 150
-55 to 150
DC
ROJC
ROJA
5.0
175
5.0
175
DC/W
DC/W
h
260
260
DC
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current @ T C = 25 DC
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
265
electrical characteristics (T c
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
100
60
I
TYP
MAX
UNIT
-
-
Volts
off characteristics
.Drain-Source Breakdown Voltage
(VGS = OV, 10 = 25OI1A)
IRFF130
IRFF131
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x O.B, VGS = OV, Tc = 125°C)
loss
-
250
1000
I1A
-
±100
nA
-
IGSS
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
B.O
-
-
A
ROS(ON)
-
-
0.1B
Ohms
gfs
2.4
-
-
mhos
VGS = OV
Ciss
pF
VOS = 25V
500
pF
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
-
BOO
Output Capacitance
-
-
150
pF
td(on)
-
30
ns
tr
-
BO
-
50
BO
-
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p,A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 = 4.0A)
Forward Transconductance
(V OS = 10V, 10 = 4.0A)
dynamic characteristics
Input Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
10 = 4.0A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(off)
tf
ns
ns
ns
source-drain diode ratings and characteristics*
Is
-
A
ISM
-
-
B
Pulsed Source Current
32
A
Diode Forward Voltage
. (Tc = 25°C, VGS = OV, Is = BA)
VSO
-
-
2.5
Volts
trr
-
300
1.5
-
ns
I1 C
Continuous Source Current
Reverse Recovery Time
(Is = BA, dls/dt = 100All1sec, Tc = 125°C)
-
ORR
'Pulse Test: Pulse width:::; 300 p.s, duty cycle:::; 2%
100
80
60
2.4
40
;'><.:
(,: "/"'" " "" ""- "
20
r--.~
10~s
m4
a:
u
........
....
2
Z
~
c
g
1.0
0.8
0.6
"
"" "
1m.
40
1.6
1.4
~ O.B
~
100ms
rl
0:
DC
60 80 100
I
I
=
=
L
,,/
200
0.6
0.4
-r-- -.....-
-- -
. / VROSIONI
/
......V
-r--- r---
-
VGSITHI_
r-
O. 2
~:=~~~~
20
~
gs
>C) t.O
o
:-. 10m.
r--.
I
=
=
"~ 1.2 -""'-
........
.......
TC= 25°0
TJ = 1500 e MAX.
0.4
R'hJC • 5.0 K/W
SINGLE PULSE
0.2 r-=0PERATION IN THIS
AREA IS LIMITED
BYADS(on)
O. 1
4
6 8 10
1.0
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 4.0 A. VGS 10V
VGS(TH) CONDITIONS: 10 250~A. VOS VGS
~ 1.8
:;;
"-
I'...
I
N
.... 100 ••
/
§
I
2.0 2.2
400 600
-40
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0
40
BO
120
160
T J' JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
266
~D~~~U
IRFF132,133
7.0 AMPERES
100, 60 VOLTS
ROS(ON) =0.25 .0.
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-205AF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
18.890-9.398)
...----++---i
0.315-0.335
18.001-8.509)
Features
• Polysilicon gate - Improved stability and reliability
~1
10.229-0.457)
• No secondary breakdown - Excellent ruggedness
0.500
(12.70)
MIN
• Ultra-fast switching - Independent of temperature
23
n Il"Hn'l--GATE
u- U- U
SOURCE
0.016-0.019 .11.-
10.406-0.483)
0.191J.0.210
14.826-5.334)
• Voltage controlled - High transconductance
0.029-0.045
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (TC
=25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M.o.
Continuous Drain Current @ T C = 25°C
Pulsed Drain Current(')
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
\(OGR
IRFF132
100
100
IRFF133
60
60
UNITS
Volts
Volts
10
7.0
7.0
A
10M
VGS
Po
28
±20
25
0.2
28
±20
25
0.2
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
5.0
175
5.0
175
°C/W
°C/W
h
260
260
°C
SYMBOL
Voss
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
267
electrical characteristics (Tc
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
100
60
-
-
Volts
-
250
1000
pA
IGSS
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
7.0
-
-
A
-
-
0.25
Ohms
gfs
2.4
-
-
mhos
Ciss
-
-
800
pF
500
pF
-
-
150
pF
30
tf
-
80
-
ns
td(off)
-
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 250 pA)
IRFF132
IRFF133
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
lOSS
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistal1ce
(VGS = 10V, 10 =4.0A)
ROS(ON)
Forward Transconductance
(VOS =10V, 10 =4.0A)
dynamic characteristics
=OV
VOS =25V
f =1 MHz
Input Capacitance
VGS
Output Capacitance
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
=30V
=4A, VGS = 15V
RGEN =500, RGS = 12.50
(RGS (EQUIV.) =100)
Turn-on Delay Time
VOS
Rise Time
10
Turn-off Delay Time
Fall Time
td(on)
tr
eo
50
ns
ns
ns
source-drain diode ratings and characteristics*
7
A
ISM
-
-
Pulsed Source Current
-
28
A
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is = 7A)
VSO
-
-
2.3
Volts
trr
-
-
ns
pC
Continuous Source Current
Is
Reverse Recovery Time
(IS =8A, dls/dt = 100A/psec, TC
= 125°C)
300
1.5
-
ORR
'Pulse Test: Pulse width? 300 ps, duty cycle:::; 2%
100
2.4
80
• 60
40
"-
20
/
ili
/
10
I:
!;;
w
2.0
r-,.
r"-~
.'" "
"'.......
r"-r-,.
2
i!i
~ ~:~
9
=
TC 25°C
TJ " 150'C MAX.
0.4
R'hJC " 5.0 KIW
SINGLE PULSE
0.2 -=OPERATION IN THIS
0.6
1.0
4
"
6
8 10
20
40
1.8
~
1.6
:;;
~ 1.4
1m.
'" " "'"
S
z
~ 1.2
>'tj 1.0
"
10 m.
c
:i
-
~ 0.6
c
a:
DC
V
200
0.4
....- /ROSIONI
-..
-r-- .---
-- -
....-/
......V
r--
-
-f----VGSITHI_
f::::-
0.2
i-!RFFI32
r-IRFFI33
60 80 100
0.8
2
100ms
:-.
./
N
100 ••
~
AREA IS LIMITED
BVROS(on)
0.1
"
10,..
.........
4
a:
!!i
u
I
I
I
I
I
J
J
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 4.0 A, VGS = 10V
VGS(TH) CONDITIONS: 10 = 250pA. VOS = VGS
2.2
400 600
40
YO&' ORAIN-TO-SOURCE YOLTAGE (YOLTS)
o
40
80
120
160
TJ • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
268
~D~~
IRFF210,211
2.2 AMPERES
200, 150 VOLTS
ROS(ON) =1.5 il
FIELD EFFECT POWER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode' Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
0.315-0.335
(8.001-8.509)
....-----7-..- -......
Features
• Polysilicon gate -
Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching -
Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
(unless otherwise specified)
SYMBOL
VOSS
VOGR
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ T C
= 25°C
10
IRFF210
200
UNITS
Volts
200
IRFF211
150
150
2.2
2.2
A
Volts
Pulsed Drain Current(1)
10M
9
9
Gate-Source Voltage
VGS
Po
±20
±20
15
.12
15
.12
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150.
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ROJC
ROJA
8.33
8.33
175
175
°CIW
°CIW
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
TL
260
260
°C
Total Power Dissipation @ TC
Derate Above 25° C
Operating and Storage
Junction Temperature Range
=25°C
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
269
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVDSS
200
150
-
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFF210
IRFF211
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loss
-
-
Volts
-
-
250
1000
pA
-
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.2
-
-
A
ROS(ON)
-
-
1.5
Ohms
9fs
.72
-
-
mhos
Ciss
-
-
150
pF
-
80
pF
25
pF
-
8
-
ns
15
10
-
ns
-
ns
-
8
-
ns
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 IJ.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.25A)
Forward Transconductance
(VOS = 10V, 10 = 1.25A)
dynamic characteristics
=OV
Input Capacitance
VGS
Output Capacitance
VOS= 25V
f = 1 MHz
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 90V
td(on)
Rise Time
10 = 1.25A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
tr
td(off)
tf
(RGS (EQUIV.) = 100)
source-drain diode ratings and characteristics*
Is
-
-
2.2
A
Pulsed Source Current
ISM
-
-
9.0
A
Diode Forward Voltage
(Tc = 25°C, VGS = OV, IS = 2.SA)
VSO
-
-
2.0
Volts
290
2.0
-
ns
pC
Continuous Source Current
Reverse Recovery Time
(IS = 2.2A, dls/dt = 100A/psec, Tc
trr
=125°C)
-
ORR
'Pulse Test: Pulse width:::; 300/.ls, duty cycle ~ 2%
50
40
2.4
20
2.0
!'
15
l
i
o
'0
8
6
I........
'" ,'" ['..
I(
4
:--......"
2
/'
II:
a::
B
:--......
,/
1.0
.....
10"s
!
i',
'" "-
r;TC=25'C
J = 150'C MAX.
RlhJC =
0.2
8.33 KIW
SINGLE PULSE
r
1
O. 1 ""':OPERATION IN THIS AREA
_IS liMITED
1
4
!") I
6 8 10
20
40
~
1.4
~
1.2
"
1.0
~
r-...
i'~ I'.
i'~ i'
:=~~~:~:::;;
RiSI
1.6
z
1 ms
9
1.B
~
.... l00.s
,-" ~
0.8
0.6
.. 0.4
~
" 1.0
"
40
-
a;
..... 100"
-r-- -,.,......
/'
./
,/
-'"---
f--
VGSITH) -
r
0.2
:=~~~~~-=;: ""
20
I
-
o
400 600
YDS, DRAIN-TO·SDURCE YDLTAGE (VOLTS)
-40
o
40
80
120
160
T J' JUNCTION TEMPERATURE I·C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND
272
VQSITHI VS.
TEMP.
~D~[P~U
IRFF220,221
3.5 AMPERES
200, 150 VOLTS
ROS(ON) =0.8 n
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
A$.
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applica~ions such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890·9.398)
0.315-0.335
(8.001-8.509)
Features
• Polysilicon gate - Improved stability and reliability
~1
(0.229-0.457)
23
n fr-tnl---GATE
U- U
SOURCE
• No secondary breakdown - Excellent ruggedness
...L-_~.U4
0.500
(12.70)
MIN
• Ultra-fast switching - Independent of temperature
0.016-0.019
(0.406-0.483)
.Il--
0.190-0.210
(4.826-5.334)
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ T C = 25°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF220
200
200
IRFF221
150
150
UNITS
Volts
Volts
10
3.5
3.5
A
IDM
VGS
Po
14
±20
20
1.6
14
±20
20
1.6
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
RUJC
ReJA
6.25
175
6.25
175
°elW
°CIW
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1116" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
273
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
200
150
-
-
Volts
-
250
1000
pA
±100
nA
off characteristics
Drain-Source Breakdown Voltage
(Vas = OV, 10 = 250 pA)
IRFF220
IRFF221
Zero Gate Voltage Drain Current
(Vos = Max Rating, Vas = OV, Tc = 25°C)
(Vos = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
-
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
3.5
-
-
A
ROS(ON)
-
-
0.8
Ohms
gfs
1.2
-
-
mhos
-
-
600
pF
300
pF
-
80
pF
20
ns
30
-
-
3.5
A
-
14
A
VSO
-
-
2.0
Volts
trr
-
350
2.3
-
ns
pC
-
Gate-Source Leakage Current
(Vas = ±20V)
on characteristics·
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
TC = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 2.OA)
Forward Transconductance
(VOS = 10V, 10 = 2.0A)
dynamic characteristics
Input Capacitance
Vas = 10V
Ciss
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switching characteristics·
Turn-on Delay Time
VDS = 90V
Rise Time
10 = 2.OA, Vas = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
-
td(on)
tr
td(off)
tf
30
50
ns
ns
ns
source-drain diode ratings and characteristics·
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is = 3.5A)
Reverse Recovery Time
(Is = 3.5A, dls/dt = 100A/psec, Tc = 125°C)
-
ORR
·Pulse Test: Pulse width :5 300 I1S, duty cycle :5 2%
50
40
2.4
2.2
20
2.0
I :
...
I
~
~
........
;I'
;I'
r-..
;I'
" "t'-....,,~
'"
1.0
0.8
0.6
0.4
........
r--..
4
IG
Z
........
........
10
Tc = 25°C
4
.... 1 ms
~
r-..
"
1.2
1.0
40
80 80100
0.8
0
~ 0.6
a:
100ms
200
./
0.4
r--
-
- -
... V
~
..,/'
I---
V
./"
./
'"
r----Io-.
~SITHI- f - -
r--
1-0..
0.2
DO
:~~;~~~::- fo.
20
~on
"
10ms
RDS1Oo/
1.8
>"
~
r--..
I
8 8 10
~
........
f-;rJ' 150'0 MAX.
RthJO • B.25K/W
SINGLE PULSE
O. 1 =OPERATION IN THIS AREA
_IS liMITED
R~S(r)
0.05 1
100 "B
........
I--
l/
CONDITIONS:
ROS(ON) CONOITIONS: 10' 2.0 A. VGS' 10V
VGS(TH) CONOITIONS: 10' 250,.A. VOS' VGS
'":::;
..:
:ea: 1.6
c 1.4
2
N
Q
0.2
r
,
"- r-...,i'
c
10 "B
I--
0
400 BOO
-40
40
80
120
160
TJ • JUNCTION TEMPERATURE ('C)
YDS. DRAIN·TO·SOURCE YDLTAGE (YOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
274
~D~[¥~lf
IRFF222,223
3 AMPERES
FIELD EFFECT POVVER TRANSISTOR
200, 150 VOLTS
ROS(ON) = 1.2 n
Preliminary
This series of N-Channel Enhancement-mode Power
.MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
.---;-,.---;
Features
• Polysilicon gate -
0.315-0.335
(8.001-8.509)
~
Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching -
Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
0.029-0.045
(0.737-1.143)
0.028-0.034
• Excellent thermal stability - Ease of paralleling
maximum ratings (TC =25° C)
(0.711-0.884)
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF222
200
200
IRFF223
150
150
UNITS
Volts
Volts
10
3.0
3.0
A
Pulsed Drain Current(1)
10M
Gate-Source Voltage
Total Power Dissipation @TC
Derate Above 25° C
Operating and Storage
Junction Temperature Range
VGS
Po
12
±20
20
0.16
12
±20
20
0.16
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ROJC
ROJA
6.25
175
6.25
175
°C/W
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
TL
260
260
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current @ T C = 25°C
=25°C
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
275
=25° C) (unless otherwise specified)
electrical characteristics (Tc
I
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
BVDSS
200
150
-
-
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS. =OV, 10 = 250 JlA)
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS =OV, TC = 125°C)
IRFF222
IRFF223
lOSS
-
-
Volts
-
250
1000
JlA
-
±100
nA
IGSS
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
3.0
-
-
A
-
-
1.2
Ohms
1.2
-
-
mhos
-
-
600
pF
-
300
pF
-
80
pF
-
20
-
ns
30
-
ns
50
-
ns
-
30
-
ns
-
3
12
A
A
1.8
Volts
350
2.3
-
JlC
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 = 250 f.lA)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =2.0A)
ROS(ON)
Forward Transconductance
(VOS = 10V, 10 =2.0A)
gfs
dynamic characteristics
=10V
Ciss
VOS =25V
Coss
Reverse Transfer Capacitance
C rss
f =1 MHz
switching characteristics*
Turn-on Delay Time
VOS =90V
td(on)
Rise Time
10 =2.0A, VGS =15V
tr
Turn-off Delay Time
RGEN =50U, RGS = 12.5U
td(off}
Fall Time
tf
(RGS (EQUIV.) =10n)
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Output Capacitance
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, IS = 3.0A)
VSO
-
trr
-
Continuous Source Current
IS
Reverse Recovery Time
(Is =3.5A, dls/dt = 100A/Jlsec, Tc
=125°C)
-
ORR
ns
'Pulse Test: Pulse width :5 300 lIS, ,duty cycle :5 2%
50
40
2.4
2.2
I
-
20
2.0 -
i3
ili
!i
~
10
a
6
4
!Zw
2
~
1.0
O.B
0.6
0.4
"
1"- " ~ "
./
" ~ "'~ "
./
-"
"-
II:
II:
z
~
c
.9
TC =251>C
T J = 150D C MAX.
0.2
R'hJC =6.25 KIW
SINGLE PULSE
!:=OPERATION IN THIS AREA
O. 1
_ I S liMITED
RiS
I
r
0.05 I
4
""
~r-..
100"s
":::;
1.8
~
1.6
~
1.4
a:
"
~
~
:;
1 ms
>
:~~~~~~
40
"
50 BO 100
2
o
lOOms
::- ..
~
r- I-
a:
0.6
I
I
I
I
I
/
CONDITIONS:
ROS(ON) CONDITIONS: 10 2.0 A. VGS = 10V
VGS(TH) CONOITIONS: 10 250pA. VOS = VGS
ROSIONV
=
=
./
. . .V
-1 -f--
,/
r---
-
,.....,.
.;'/
...........
""
i--
--
~~ io-.
r---
004
0.2
DC
200
1.2
1.0
~ O.B
10ms
.....
" I'20
~
C
Z
(!")
6 B 10
10".
"-
I
o
400 BOO
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
VOS. DRAIN·TO·SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
276
~~D~[P~U
IRFF230,231
FIELD EFFECT POWER TRANSISTOR
5.5 AMPERES
200,150 VOLTS
ROS(ON) =0.4 n
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-205AF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
.-__+....__. . .
Features
0.315-0.335
(8.001-8.509)
(0.483-0.838)
;-.-=~:.e:n=;yr:::~~
_-.r --
• Polysilicon gate - Improved stability and reliability
SEATING
PLANE
DRAIN
-ft---GATE
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25° C)
(unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T C = 25°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC
Derate Above 25° C
Operating and Storage
Junction Temperature Range
=25°C
-
SYMBOL
Voss
VOGR
IRFF230
200
200
IRFF231
150
150
UNITS
Volts
Volts
10
5.5
5.5
A
10M
VGS
Po
22
±20
25
0.2
22
±20
25
0.2
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
5.0
175
5.0
175
°C/W
°C/W
h
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
277
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
200
150
-
-
Volts
-
250
1000
J1A
±100
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 J1A)
Zero Gate Voltage Drain Current
(V OS =Max Rating, VGS =OV, Tc = 25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
IRFF230
IRFF231
losS
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
5.5
-
-
A
ROS(ON)
-
-
0.4
Ohms
gfs
1.75
-
-
mhos
-
-
800
pF
-
450
pF
150
pF
-
ns
-
5.5
A
22
A
2.0
Volts
450
3.0
-
ns
pC
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State' Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =3.0A)
Forward Transconductance
(VOS =10V, 10 =3.0A)
dynam ic characteristics
=OV
Ciss
Output Capacitance
VOS =25V
Coss
Reverse Transfer Capacitance
f =1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS =90V
td(on)
Rise Time
10 =3.0A, VGS =15V
tr
Turn-off Delay Time
RGEN =50.0, RGS =12.5.0
td(off)
Fall Time
tf
(RGS (EQUIV.) =10n)
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Continuous Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, IS =5.5A)
Reverse Recovery Time
(Is =5.5A, dls/dt =100A/psec, Tc
VSO
trr
ORR
=125°C)
2.4
40
"- " "1'0..
1'1'0..
I,
..........
~ ........
i'.
...........
0.2
o.
,
'.0
~
8
"
c
......
w
N
:;
1.6
100".
'~"
1.4
~
~ 1.2
"
, ms
~ 1.0
>
r-.I'..
!i!
......
r"-I'..
8 10
ns
ns
20
40
60 80 100
f'
100m.
-IRFF230
I
DC IR F23'
200
~
1
=
=
=
=
./
1.8
10".
10m.
f- i~: 12:;~ MAX.
i-RlhJC' 5.0 KIW
SINGLE PULSE
=OPERATION IN THIS
AREA IS LIMITED
BYRDS(onl
4
20
ns
(
1
1
1
CONDITIONS:
ROS(ON) CONDITIONS: '0 3.0 A. VGS 10V
VGS(TH) CONDITIONS: 10 250~A, VOS VGS
2.0
......
30
I
2.2
..-
25
:s 300 p.s, duty cycle :s 2%
'00
80
60
'x,:
15
-
Is
Pulsed Source Current
·Pulse Test: Pulse width
-
0.8
'"~
0.6
rr,Q
0.4
-r-~
~
V
--
",. ~
V
/"
r--- I--
'"
,LRoSIONI I - -
V~
r-
0.2
o
400 800
VOl. DRAlN·TO-SOURCE VOLTAGE (VOLTS)
-40
o
40
80
120
160
TJ • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEII/IP.
278
~~D~~
IRFF232,233
4.5 AMPERES
200, 150 VOLTS
ROS(ON) =0.6 n
FIELD EFFECT POYIER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS te'chnology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0,350-0,370
(8,890-9,398)
.-----;-r--.....;
0.3' 5-0,335
(8.00'-8,509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (TC =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ Tc = 25°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ T C = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF232
200
200
IRFF233
150
150
UNITS
Volts
Volts
10
4.5
4.5
A
10M
VGS
Po
18
±20
25
0.2
18
±20
25
0.2
A
Volts
Watts
W/oC
TJ,TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
5.0
175
5.0
175
°CIW
°CIW
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1116" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max_ junction temperature_
279
electrical characteristics (Tc = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVDSS
200
150
-
-
250
1000
pA
-
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
4.5
-
-
A
-
-
0.6
Ohms
-
-
mhos
-
800
pF
450
pF
150
pF
15
25
-
ns
MAX
UNIT
-
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFF232
IRFF233
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(V OS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
losS
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
-
-
-
on characteristics *
Gate Threshold Voltage
(V OS = VGS, 10 = 250 f.1.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 3.0A)
ROS(ON)
Forward Transconductance
(VOS = 10V, 10 = 3.0A)
1.75
gfs
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
-
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
-
-
td(on)
-
tr
-
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 90V
Rise Time
10 = 3.0A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
td(off)
tf
30
20
ns
ns
ns
source-drain diode ratings and characteristics*
Is
-
A
Pulsed Source Current
ISM
-
4.5
-
18
A
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 4.5A)
VSO
-
-
1.8
Volts
trr
-
450
3.0
Continuous Source Current
Reverse Recovery Time
(Is = 5.5A, dls/dt = 100A/psec, Tc = 125°C)
ORR
ns
pC
-
-
'Pulse Test: Pulse width :S 300 JiS, duty cycle :S 2%
100
2.4
80
60
2.2
r-- -
2.0
r-- -
40
20
X
10
8
6
i"-
I"'"
..........
O. 6
0.4
TC = 25°C
TJ'" 150D C MAX.
I-AlhJC
0
SINGLE PULSE
IN THIS
o. 2 t-- OPERATION
AREA IS LIMITED
o. 1
1.0
i"-
r-...
6
VOS.
8 10
20
40
1.6
"~
1.4
2_
1.2
o
i:
1m,
§
10ms
1.0
~
0.8
"Z
0.6
Q
lOOms
IRFF232
k-"
DRAIN~TO-SOURCE
t
60 80100
DC
200
a:.'B. 0.4
-
0.2
IAT233
400 600
/'
./
1.8
::i
>
,"
BY ROS(on)
4
100",5
"- 'r-....
.......
5.0 KIW
I
N
10/-IS
"'" ""f'....
1.0
o8
~
""
i'..
I
I
ICONOlTIONJ:
ROS(ON CONDITIONS: 10 =3.0A. VGS =10V
VGS(TH) ONOITIONS: 10 =250pA. VOS =VGS
I
LROSjONI
/'
-
- -- - --r-./'
.."... V
:---
V
VGS(THI
-40
40
80
120
T J • JUNCTION TEMPERATURE (OCI
VOLTAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSION) AND VGSITHI VS. TEMP.
280
160
~~D~[F~
IRFF310,311
1.35 AMPERES
400, 350 VOLTS
ROS(ON) = 3.6 n
FIELD EFFECT POWER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
-.----;-;.---;
0.315-0.335
(8.001-8.509)
0.019-0.033
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C =25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current@ TC
=
25°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @Tc
Derate Above 25° C
Operating and Storage
Junction Temperature Range
=25°C
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF310
400
400
IRFF311
350
350
UNITS
Volts
Volts
10
1.35
1.35
A
10M
VGS
Po
5.5
±20
15
0.12
5.5
±20
15
0.12
A
Volts
Watts
W/oC
TJ. TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
8.33
175
8.33
175
°C/W
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1)
..
Repetitive Ratmg: Pulse width limited by max. junction temperature.
281
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
off characteristics
IRFF310
IRFF311
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 J.lA)
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS =.OV, Tc = 125°C)
loss
-
-
250
1000
J.lA
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
1.35
-
-
Amp
Gate-Source Leakage Current
(VGS = ±20V)
IGSS
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 J.l.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.8A)
ROS(ON)
-
-
3.6
Ohms
9fs
0.4
-
-
mhos
VGS = OV
Ciss
pF
VOS = 25V
Coss
50
pF
Reverse Transfer Capacitance
f = 1 MHz
C rss
-
150
Output Capacitance
-
15
pF
3
-
ns
Forward Transconductance
(VOS = 10V, 10 = 0.8A)
dynamic characteristics
Input Capacitance
switching characteristics*
Turn-on Delay Time
VOS = 175V
Rise Time
10 = 0.8A, VGS = 15V
-
td(on)
tr
Turn-off Delay Time
RGEN = 50n, RGS = 12.sn
Fall Time
(RGS (EQUIV.) = 10n)
td(off)
tf
10
5
8
ns
ns
ns
source-drain diode ratings and characteristics*
Is
-
-
1.35
A
Pulsed Source Current
ISM
-
-
5.5
A
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 1.35A)
VSO
-
-
1.6
Volts
trr
-
-
ns
Continuous Source Current
Reverse Recovery Time
(IS = 1.35A, dis/dt = 100AlJ.lS" TC = 125°C)
380
·Pulse Test: Pulse Width :5 300 I1S, duty cycle:5 2%
10
2.4
8
6
.'
K", I'...
ifi
I'
~ ~:~
~ 0.6
IE
w
ill
a
0.4
0.2
z
~
Q
s?
"
"
........
i'r-...."
,
" ,"
"- "........
2.0
~
"" ,
"
"
c
100~
::;
~
~
1ml-
0.08
0.06
1.4
1.2
"
1.0
z
-:.. O.B
z
o
10J,_
~ 0.6
100ms
........
DC
a:
I'-
t
0.4
V
I,
1/
ROSIONI
/
/
1.6
:~
~
CONDITIONS:
ROS(ON CONDITIONS: 10 = O.SA, VGS = 10V
VGS(TH) ONDITIONS: 10 = 250pA, VOS = VGS -
1.8
a:
........
',,"- "-
TC =2S'C
TJ =IS0'C MAX.
0.04
I- RthJC =8.33 KIW
SINGLE PULSE
r-!=OPERATION IN THIS
0.0 2
AREA IS LIMITED
BVRDS(on)
0.0 1
4
6 8 10
1.0
10'1
~
.............
O. 1
2.2
I
- - -
/
/'
r---
",/
/
'"
r--
...-' I-""
-
--.,;:~ -
0.2
IRFF311IRFF310---<
20
40
60 80100
200
o
400 600
-40
o
40
80
120
160
T J , JUNCTION TEMPERATURE ('C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
282
~D~[P~U
IRFF312,313
1.15 AMPERES
400, 350 VOLTS
ROS(ON) =5.0 !l
FIELD EFFECT POWER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
4
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
0.3'5-0.335
(8.00'-8.509)
Features
• Polysilicon gate - Improved stability and reliability
~,
(0.229-0.457)
• No secondary breakdown - Excellent ruggedness
n
U~
23
n~~it-ft-U U
SOURCE
0-'-.50-0-"0.;;<0"6-0.0'9
('2.70)
(0.406-0.483)
MIN
• Ultra-fast switching - Independent of temperature
.I!.-
0.'90-0.2'0
(4.826-5.334)
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage. RGS = 1M!l
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
SYMBOL
VOSS
VOGR
IRFF312
400
400
IRFF313
350
350
UNITS
Volts
Volts
10
1.15
1.15
A
10M
VGS
Po
4.5
±20
15
0.12
4.5
±20
15
0.12
A
Volts
Watts
W/oC
TJ. TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
8.33
175
8.33
175
°C/W
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
,
.
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
283
electrical chC!racteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TVP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
250
1000
pA
±100
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 250 pA)
IRFF312
IRFF313
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS =OV, TC = 125°C)
lOSS
-
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
1.15
-
-
Amp
ROS(ON)
-
-
5.0
Ohms
gfs
0.4
-
-
mhos
Ciss
-
385
600
pF
Coss
C rss
-
70
200
pF
-
12
40
pF
3
ns
5
-
8
-
ns
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 = 250 p.A)
Tc
=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =0.8A)
Forward Transconductance
(VOS = 10V, 10 =0.8A)
dynamic characteristics
Output Capacitance
=OV
VOS =25V
Reverse Transfer Capacitance
f
Input Capacitance
VGS
= 1 MHz
switching characteristics*
= 175V
Turn-on Delay Time
VOS
Rise Time
10 =0.8A, VGS
Turn-off Delay Time
RGEN
=15V
=50n, RGS = 12.50.
(RGS (EQUIV.) = 100.)
Fall Time
-
td(on)
tr
td(off)
tf
10
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS =OV, Is
=1.15A)
Reverse Recovery Time
(Is = 1.35A, dis/dt =100A/JiS, Max., TC = 125°C)
IS
-
-
1.15
A
ISM
-
-
4.5
A
VSO
-
-
1.5
Volts
trr
-
-
380
ns
·Pulse Test: Pulse width :s; 300 f../S, duty cycle :s; 2%
10
2.4
B
6
,K" K. "~
Ie
~
i
".
1.0
0.8
0.6
0.4
a:
~
o
z
r--...",
I'
'"
!;'
0.2
~ O. 1
" 0.0B
§ 0.06
TC =25'C
TJ =150'C MAX.
0.04
RlhJC =8.33 KfW
SINGLE PULSE
0.02 -=OPERATION IN THIS
AREA IS LIMITED
BYRDS(on)
0.01
1.0
4
6 B 10
"-
"-
"
"'-'" "
I'...
,i'- r-...""I'~""-
:=~~~~~
20
40
60 80100
~
:::;
~
a:
!i!
r
/
1.6
~
10!S
r--- r--- I -
1.2
~ 0.8
z
o
~
100,ms
a:
I
0.6
0.4
L
V
1.4
>" 1.0
C
z
-
........... .....
/
./
"
/'
r--
~~ fr-- -
0.2
:::: I
200
/
=10V I,
1/
=VGS - ROSIONI
1.8
;;
lml-
DC
=
=
c
l00~_
"
r--
I
I
I
I
CONDITIONS:
ROS(ONbCONDITIONS: 10 O.SA, VGS
2.0 I-- VGS(TH) ONOITIONS: 10 250pA, VOS
10'1'
"
,"
I
2.2 I--
I
o
400 600
-40
o
40
60
120
160
T J , JUNCTION TEMPERATURE ('C)
VOS, ORAIN-T0-50URCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
284
~~D~~~
IRFF320,321
2.5 AMPERES
400, 350 VOL TS
RDS(ON) = 1.8 n
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
18.890-9.398)
0.315-0.335
(6.001-6.509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (TC =25° C)
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF320
400
400
IRFF321
350
350
UNITS
Volts
Volts
10
2.5
2.5
A
Pulsed Drain Current(l)
10M
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
VGS
Po
10
±20
20
0.16
10
±20
20
0.16
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
6.25
175
6.25
175
°C/W
°C/W
260
260
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T C = 25°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1116" from Case for 10 Seconds
h
..
(1) Repetitive Ratmg: Pulse width limited by max. junction temperature.
285
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
-
250
1000
pA
-
±100
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFF320
IRFF321
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loSS
IGSS
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.5
-
-
A
ROS(ON)
-
-
1.8
Ohms
gfs
0.8
-
-
mhos
Ciss
-
-
600
pF
200
pF
40
pF
-
ns
-
ns
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.25A)
Forward Transconductance
(Vos= 10V,lo-';;-f.25Af---
dynamic characteristics
Input Capacitance
VGS = 10V
Output Capacitance
VOS = 25V
f = 1 MHz
Reverse Transfer Capacitance
Coss
C rss
-
switching characteristics*
Turn-on Delay Time
VOS = 175V
Rise Time
10 = 1.25A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
-
td(on)
tr
td(off)
tf
20
25
50
25
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 2.5A)
Reverse Recovery Time
(Is = 2.5A, dls/dt = 100Alpsec, Tc = 125°C)
.
Pulse Test. Pulse width
iii
......
"- "
" ""
1-/'
0.8
0.6
0.4
0.1
_ 0.08
0.06
0.04
-
450
3.1
-
ns
pC
trr
r--......
-
TC=25'C
TJ =150'C MAX.
RthJC =6.25 KIW
""
.......
lm;-
........
" ""
............
SING~E PU~E
I
I I II
4
:d
l00~.
~
.......
6 8 10
20
40 50 80100
200
VOS, ORAIN·TO·SOURCE VOLTAGE (VOLTS)
.1
10Js
I
I
I
V
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 1.25A, VGS =10V
VGS(TH) CONDITIONS: 10 250"A, Vos =VGS
_IROSION~ L
=
=
1.8
::l
~
a:
1.6
!i!
1.4
~
1.2
"
1.0
~
2
100~S
eCI
I
I
-
c
10p,s
OPERATION IN THIS AREA
0.02 - I S ~IMITEe BY ReS(on)
0.0 1
Volts
2.0 -
......
.......
~ 0.2
~
1.6
2.2
,/
a.
A
2.4
iir
1
10
:s 300 JAS, duty cycle :s 2%
8
8
2
A
-
-
2.5
ISM
ORR
10
~
-
VSO
20
I
I:
Is
«Z 08
.
o
!
a:
.
I-!:I~FF320
0.6
0.4
V
- ---
- -----
......
,../'
/
V
/
./
i-""
r--- :--
-
-.::~ -
0.2
t'-ljFFj21
o
400 600
-40
o
40
80
120
160
TJ , JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
286
~D~~
IRFF322,323
FIELD EFFECT PONER TRANSISTOR
2.0 AMPERES
400, 350 VOLTS
. ROS(ON) = 2.5 n
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
A$
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-205AF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(B.B90-9.39B)
0.315-0.335
(8.oo1-B.509)
Features
• Polysilicon gate -
Improved stability and reliability
n Un..-"-tt-fl-U
~1
(0.229-0.457)
• No secondary breakdown - Excellent ruggedness
23
-L-_--;;-;,;....
• Ultra-fast switching -
Independent of temperature
0.500
'(12.70)
MIN
• Voltage controlled - High transconductance
0.016-0.019
(0.406-0.483)
.1 i--
GATE
SOURCE
0.190-0.210
(4.B26-5.334)
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C =25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current @ T C = 25°C
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF322
400
400
IRFF323
350
350
UNITS
Volts
Volts
10
2.0
2.0
A
Pulsed Drain Current(l)
10M
8
8
Gate-Source Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
VGS
Po
±20
20
0_16
±20
20
0.16
A
Volts
Watts
W/oC
TJ. TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
6_25
175
6.25
175
°CIW
°CIW
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
..
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
287
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
250
1000
pA
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.0
-
-
A
ROS(ON)
-
-
2.5
Ohms
gfs
0.8
-
-
mhos
-
-
600
pF
200
pF
40
pF
-
20
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRFF322
IRFF323
Zero Gate Voltage Drain Current
(V OS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
IGSS
-
on characteristics·
Gate Threshold Voltage
(VOS =VGS, 10 =250 JAA)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =1.25A)
Forward Transconductance
(VOS =10V, 10 =1.25A)
dynamic characteristics
=10V
Ciss
VOS =25V
Coss
Reverse Transfer Capacitance
f =1 MHz
C rss
switching characteristics·
Turn-on Delay Time
VOS =175V
tel (on)
Rise Time
10 =1.25A, VGS =15V
tr
Turn-off Delay Time
RGEN =500, RGS =12.50
td(off)
Fall Time
tf
(RGS (EQUIV.) =100)
source-drain diode ratings and characteristics·
Input Capacitance
VGS
Output Capacitance
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =2.0A)
Reverse Recovery Time
(Is =2.5A, dls/dt =100A/psec, Tc
=125°C)
25
50
25
ns
ns
ns
Is
-
A
-
-
2.0
ISM
8
A
VSO
-
-
1.5
Volts
trr
-
450
3.1
-
pC
ORR
ns
'Pulse Test: Pulse width::;; 300 I1s, duty cycle::;; 2%
2.4 r--~
I-'-'I-'I'---"-I-'--'I-""---''---'-V'-'
20
2.2
10
8
6
1'0.
,,-
i[
~
:Ii
2
~
1
..
0.8
0.6
iii
,,-'
"
,
~ 0.4
G
I
.......... ..........
.......... ......1'.....
0.2
_ 0.1
90.08
0.06
0.04
-
0.02 0.0 1
I
4
Tn
6 8 10
'" '"
............ ........
...............
TC=2S'C
TJ=lSO'CMAX.
RthJC = 6.2SK/W
SINGLE PULSE
OPERATION IN THIS AREA
IS LIMITED BY ROS(on)
I
10",,_
'"
.......
.......
........
o
I
lOOi"
lms-
eo 80100
200
"
I/
DSIONI +--+---i
/
1.81---I--+---+--+--t---t---t--+V~+-I---i
1.61---+-+--+--t--t--+-+"'-7/9-__-_+____;
'"
;'/
'.21---I::_=--+r----+_--t--/-+V"~+--+-+---I--+----;
~
l.ol---+-+---+=~o:::::;..:;:1::::--+-+--+-+-l---l
~..
0.81---+l,....---"-+I--"""'--"'l'--I---I---f---f=-...._=-v~~
V
-r--
:i1 0.6 __
li!z 0.41---I--+---+--+--t---I--+---+--+--1----;
c
a:
-IJFF322
I-IrF3j3
40
IR
=
1.41---+-+--+--t--t--+.....".9--_+--t--1---i
;;
I
100ms
=
~
~
10ls
CONDITIONS:
RDS(ON) CONDITIONS: ID = 1.25 A. VGS = IOV
VGS(TH) CONDITIONS: ID 250,.A. VDS VGS -
::;
~
a:
DC
20
I---
2.0 -
400 600
0.21---+-+--+--t--t--+-+--+--t--1----l
T J. JUNCTION TEMPERATURE ('C)
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
288
~D~~
IRFF330,331
3.5 AMPERES
400, 350 VOLTS
ROS(ON) == 1.0 !l
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-205AF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
IB.B90-9.39B)
0.315-0.335
IB.001-B.509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
0.500
112.70)
MIN
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
0.029-0.045
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (TC
=25°C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS == 1Mll
Continuous Drain Current @ TC == 25°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
IRFF330
400
400
IRFF331
350
350
UNITS
Volts
Volts
10
3.5
3_5
A
10M
VGS
Po
14
±20
25
0.2
14
±20
25
0_2
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
5.0
175
5.0
175
°C/W
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
289
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
250
1000
pA
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
3.5
-
-
A
ROS(ON)
-
-
1.0
Ohms
1.S
-
-
mhos
-
-
900
pF
300
pF
80
pF
-
15
20
-
ns
30
20
-
ns
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
IRFF330
IRFF331
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, Tc =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
IGSS
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VOS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =2A)
Forward Transconductance
(VOS =10V, 10 =2A)
gfs
dynamic characteristics
=OV
Ciss
Output Capacitance
VOS =25V
Coss
Reverse Transfer Capacitance
f =1 MHz
C rss
switching characteristics*
Turn-on Delay Time
VOS =175V
td(on)
Rise Time
10 =2A, VGS =15V
tr
Turn-off Delay Time
RGEN =500, RGS =12.50
td(off)
Fall Time
tf
(RGS (EQUIV.) =100)
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is =3.5A)
Reverse Recovery Time
(IS =3.5A, dls/dt =100A/psec, Tc
=125°C)
-
ns
Is
-
-
3.5
A
ISM
-
-
14
A
VSO
-
1.0
1.S
Volts
trr
-
SOO
4.0
-
ORR
ns
pC
'Pulse Test: Pulse Width :5 300 p.s, duty cycle :5 2%
2.4
20
14
'"
~
'0
.....
8
6
iii
15
........
I'
i'...
..........
,I---'
a:
B
!
."'"
2
lIi
ill
........
0.8
0.6
0.4
"-
'" "'..... "
"" ""
~ O.
90.08
0.06
'=-
I
r-....
"
6 6'0
o
'OOj'
:::;
40
60 80'00
200
1.8
~
1.6
~
I
1.4
~
1.2
>"
1.0
o
z
«
DC -
~ 0.6
c
a:
;;
./.
./
V
/RDSONI
,oolms
0.8
0.4
_'~FF330
20
~
I
/V
0:
10ms
o-Ir F3
I III
4
2.0
;o-.i-
.........
""
Tc= 25°C
TJ= 150°C MAX.
R'hJC • 5.0 KIW
. SINGLE PULSE
OPERATION IN THIS AREA
0.02 - I S LIMITED BY RDSCon,
0.0,
........
' m,
.....
0.2
I
I
I
I
CONDITIONS:
ROS(ON) CONOITIONS: '0 = 2.0 A, VGS = 10V
VGS(TH) CONOITIONS: 10 = 250pA, VOS = VGS
I
2.2
........
I'...
-
-/
---
"..",.
. /V
-
./
",.
r--_
-to--VGSITHI-
~
0.2
j'
-40
400 600
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
40
80
TJ • JUNCTION TEMPERATURE I'CI
120
160
TYPICAL NORMALIZED ROSION,I AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
290
~o~[f~
IRFF332,333
3.0 AMPERES
400, 350 VOLTS
ROS(ON) = 1.5!}
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
0.3'5-0.335
(8.001-8.509)
0.Q19-0.033
Features
• Polysilicon gate -
Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching • Voltage controlled -
Independent of temperature
High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25°C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!}
Continuous Drain Current @Tc = 25°C
Pulsed Drain Current!')
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF332
400
400
IRFF333
350
350
UNITS
Volts
Volts
10
3.0
3.0
A
10M
VGS
Po
12
±20
25
0.2
12
±20
25
0.2
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
5.0
175
5.0
175
°C/W
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
291
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
400
350
-
-
Volts
-
-
250
1000
pA
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
3.0
-
-
A
ROS(ON)
-
-
1.5
Ohms
gfs
1.S
-
-
mhos
Ciss
-
-
900
pF
.-
300
pF
80
pF
-
20
td(off)
-
tf
-
30
20
-
ns
tr
Is
-
-
3.0
A
ISM
-
-
12
A
VSO
-
-
1.5
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 250 pA)
IRFF332
IRFF333
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV, Te = 25°C)
(VOS = Max Rating, x 0.8, VGS =OV, Te = 125°C)
losS
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250/LA)
Te
=25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 2.0A)
Forward Transconductance
(VOS = 10V, 10 =2.0A)
dynamic characteristics
=OV
VOS =25V
f = 1 MHz
Input Capacitance
VGS
Output Capacitance
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
=175V
=2.0A, VGS = 15V
Turn-on Delay Time
VOS
Rise Time
10
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.)
td(on)
= 50n, RGS = 12.5!l
= 100)
15
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Te = 25°C, VGS =OV, Is
=3.0A)
Reverse Recovery Time
(Is =3.5A, dls/dt =100A/psec, Te
trr
= 125°C)
ORR
-
SOO
4.0
ns
pC
'Pulse Test: Pulse width:::; 300 /IS, duty cycle :5 2%
2.4
20
12
10
"
8
6
r=
!
2
""'-
1
6
:-......
:.......
i"
~ 0.2
f~
TC= 25'C
TJ= 150'CMAX.
R'hJC = 5.0 KJW
0.04 f- SINGLE PULSE
OPERATION IN THIS AREA
0.02 r-IS LIMITED BY ROS{on)
0.0 1
.......
['....
t"-..
.......
0.4
~ 0.1
90.08
0'.06
........
i'
i'-....
5 ~::
I
"
........
I
1'0..
I
"'"
........
r-..
c
100('
::;
1m,
a:
~
~
~
.......
~
10ms
6 8 10
20
40 60 eo 100
200
YOS, DRAIN-TO·SOURCE VOLTAGE (YOLTS)
~
I
i'-....
I II I
4
10"s
>
ROS(ON) CONOITIONS: 10 = 2.0 A, VGS 10V
VGS(TH) CONOITIONS: 10 250~A, VOS = VGS
=
=
./
1.8
V
L'
/ROSIDNI
1.6
1.4
--
1.2
1.0
C
DC
~ 0.6
o
a:
-
,..............
........
0.8
"
1-
0.4
i--IJFF332
I
2.0
Z
"
C
z
I
.-
--.---
=
,
/
,/
V
r-- r--
,...,.....-
f"'"
./"
--
V
-'
r--I--
--..::~
0.4
-
~
0.2
JRFF420IRFF421 .......
20
40
60 80100
200
40
400 600
o
40
80
120
160
T J , JUNCTION TEMPERATURE ('C)
YDS. DRAIN-TO-SOURCE YOLTAGE (YOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
294
~D~[?~
IRFF422,423
FIELD EFFECT POVVER TRANSISTOR
1.4 AMPERES
500, 450 VOLTS
RDS(ON) = 4.0 n
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350·0.370
(8.890-9.398)
-.-----:-;.----i
0.315·0.335
(8.001-8.509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T C = 25°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFF422
500
500
IRFF423
450
450
UNITS
Volts
Volts
10
1.4
1.4
A
10M
VGS
Po
5.5
±20
20
.16
5.5
±20
20
.16
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
6.25
175
6.25
175
°C/W
h
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1116" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
295
°C/W
electrical characteristics (Tc = 25° C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
SOO
450
-
-
Volts
-
-
-
250
1000
pA
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
1.4
-
-
ROS(ON)
-
-
4.0
Ohms
gfs
0.8
-
-
mhos
VGS = 10V
Ciss
-
400
pF
=25V
Coss
C rss
-
-
150
pF
-
40
pF
30
-
ns
tf
-
15
-
ns
td(off)
-
CHARACTERISTIC
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 2S0 pA)
IRFF422
IRFF423
=
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS OV, Tc = 125°C)
loss
=
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 2S0 p.A)
Tc = 25°C
"
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 =1.0A)
Forward Transconductance
(VOS = 10V, 10 = 1.0A)
A
dynamic characteristics
Input Capacitance
Output Capacitance
VOS
Reverse Transfer Capacitance
f = 1 MHz
switching characteristics*
=225V
Turn-on Delay Time
VOS
Rise Time
10 = 1.0A, VGS = 15V
Turn-off Delay Time
RGEN
Fall Time
(RGS (EQUIV.) = 10n)
td(on)
tr
=son, RGS = 12.sn
25
30
ns
ns
source-drain diode ratings and characteristics*
Is
-
-
1.4
A
Pulsed Source Current
ISM
-
-
5.6
A
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 1.4A)
VSO
-
-
1.3
Volts
-
ns
pC
Continuous Source Current
Reverse Recovery Time
(Is = 1.6A, dls/dt = 100A/psec, Tc = 125°C)
trr
600
3.S
-
ORR
'Pulse Test: Pulse width :5 300 ps, duty cycle :5 2%
10
8
6
2,4
.'
/v
m 1.0
II!
""- "- "
"""
.......
0.8
~ 0,6
...
0,4
;)
0.2
Io
Z
~ 0.1
" 0,08
90,06
TC =2S'C
T J =1S0'C MAX,
0,04
RlhJC =6,2S KIW
SINGLE PULSE
I-"'OPERATION IN THIS
0,02
AREA IS LIMITED
BY RDSlon)
0,0 1
1,0
4
6 8 10
......
r-.
......
2,2
10",s
I I
" " TT
,
........
"
" ""
1""......
2,0
40
60 60 100
200
I
I
I
V
CONDITIONS:
r--
ROS(ON) CONDITIONS: 10 =1,0 A. VGS =10V
VGS(TH) CONDITIONS: 10 =250MA. VOS =VGS -
I,
I /
ROSIONI
c
~
1.8
~
1,6
::;
V
a:
tl
51
1.4
;:
I I
I I
~
1.2
"
c
1.0
>
10ms
-:. 0,8
lOOms
2
o
;; 0.6
"
a:
DC
0.4
--/
z
--
/
I--"'"
/
V
./
/
'"
V
r-- --
-:::~ .....
0,2
IRFF422IRFF423-20
I
_
o
400 600
-40
o
40
80
120
160
T J • JUNCTION TEMPERATURE ('C)
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
296
~D~[F~
IRFF430,431
2.75 AMPERES
500, 450 VOLTS
ROS(ON) =1.5 n
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.35().().370
(8.890-9.398)
.----;-;..---.;
0.315-0.335
(8.001-8.509)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C
= 25
0
C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T C = 25°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
Voss
IRFF430
500
IRFF431
450
UNITS
Volts
VDGR
500
450
Volts
10
2.75
2.75
A
SYMBOL
10M
11
11
A
VGS
±20
±20
Volts
Po
25
0.2
25
0.2
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
thermal characteristics
Thermal Resistance, Junction to Case
ROJC
5.0
5.0
°CIW
Thermal Resistance, Junction to Ambient
ROJA
175
175
°CIW
TL
260
260
°C
Maximum Lead Temperature for Soldering
Purposes: 1116" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
297
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
. TYP
MAX
UNIT
BVDSS
500
450
-
-
Volts
-
-
250
1000
pA
IGSS
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.75
-
-
A
ROS(ON)
-
-
1.5
Ohms
-
-
mhos
-
-
800
pF
-
200
pF
60
pF
-
15
ns
10
-
40
-
ns
25
-
ns
-
-
2.75
A
11
A
-
1.4
Volts
-
800
4.6
-
ns
I1C
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =25OI1A)
IRFF430
IRFF431
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, TC =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, TC =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, VDS =10V)
Static Drain-Source On-State Resistance
(VGS =10V, 10 =1.5A)
Forward Transconductance
. (VOS =1bv, 10 =1.5A)
1.35
gfs
dynamic characteristics
=OV
Ciss
VOS =25V
Coss
Reverse Transfer Capacitance
C rss
f =1 MHz
switching characteristics*
. Turn-on Delay Time
VOS =225V
td(on)
Rise Time
10 =1.5A, VGS =15V
tr
Turn-off Delay Time
RGEN =50.0., RGS =12.5.0.
td(off)
Fall Time
tf
(RGS (EQUIV.) =10.0.)
source-drain diode ratings and characteristics*
Input Capacitance
VGS
Output Capacitance
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc =25°C, VGS =OV, Is
VSO
=4.5A)
Reverse Recovery Time
(Is =2.75A, dls/dt =100AII1sec, Tc
trr
=125°C)
ORR
ns
'Pulse Test: Pulse width :5 300 ps, duty cycle :5 2%
2.4
20
2.2
10
8
2.0
6
iii
~
15
2
I:
III
1
0.8
0.6
l
........
.....
........
.......
""
~
I
I"'r-,.
'"
.....
B 0.4
0:
.........
"-
, ,
'" rr
~
1'",
"
_ TC=25°C
T J = 150°C MAX.
RlhJC • 5.0K/W
- SINGLE PULSE
'-OPERATION IN THIS AREA
0.02 - I S LIMITED BY RDS(on)
i'...
t-...
I
0.01
1
IRFF430IRFf431-o
4
6
8 10
20
40
60 80 100
200
~
1.4
:i
~
lS
a:
DC
I I II
1.6
>"
o
I
100ms
0.04
-
I
I
I
./
I
r---.
1.0
0.8
0.6
V
/
/
./
./ "" ROSIONI
. / V'
~ 1.2
10ms
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 = 1.5 A. VGS = 10V
VGS(TH) CONDITIONS: 10 = 250~A. VOS = VGS
1.8
~
:;;
........
........
I
N
1 ms
0.2
_ 0.1
90.08
0.06
til
10",s
I
-
1-
0.4
---
...-
V
- --
/1'
~T:7-
)0...
0.2
I
o
400 600
-40
40
80
120
160
Yos. ORAIN-TO-SOURCE YOLTAGE (YOLTS)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
298
~[R30~~LF
IRFF432,433
2.25 AMPERES
500, 450 VOLTS
ROS(ON) =2.0 n
FIELD EFFECT POVVER TRANSISTOR
Preliminary
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
.....------;-;.---i
0.315-0.335
(8.001-8.5091
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown -
Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance -
Reduced drive requirement
• Excellent thermal stability -
Ease of paralleling
maximum ratings (T C = 25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T C = 25°C
Pulsed Drain Current(1)
Gate-Source,Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRFF433
450
VOGR
IRFF432
500
500
450
UNITS
Volts
Volts
10
2.25
2.25
A
10M
VGS
Po
9
9
±20
25
0.2
±20
25
0.2
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ReJC
R8JA
5.0
175
5.0
175
°C/W
TL
260
260
°C
SYMBOL
Voss
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering'
Purposes: 1116" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
299
°C/W
.'
=25° C) (unless otherwise specified)
electrical characteristics (Tc
I
CHARACTERISTIC
I SYMBOL I
MIN
BVDSS
I
TYP
MAX
UNIT
500
450
-
-
Volts
-
-
250
1000
JJA
IGSS
-
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
2.25
-
-
A
ROS(ON)
-
-
2.0
Ohms
-
-
mhos
-
800
pF
200
pF
60
pF
-
15
ns
10
-
40
-
ns
25
-
ns
-
-
2.25
A
9
A
1.0
1.3
Volts
800
4.6
-
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 JJA)
IRFF432
IRFF433
Zero Gate Voltage Drain C!-,rrent
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
loSS
-
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 J.l.A)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.5A)
Forward Transconductance
(VOS = 10V, 10 = 1.5A)
1.35
gfs
dynamic characteristics
Output Capacitance
=OV
VOS =25V
Reverse Transfer Capacitance
f = 1 MHz
Input Capacitance
Ciss
-
Coss
C rss
-
VGS
-
switching characteristics*
Turn-on Delay Time
VOS = 225V
Rise Time
10'= 1.5A, VGS = 15V
Turn-off Delay Time
RGEN = SOO, RGS = 12.SO
Fall Time
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
ns
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 2SOC, VGS = ov, Is = 2.25A)
VSO
Reverse Recovery Time
(Is = 2.7SA, dls/dt = 100AlJ.l.sec, TC = 125°C)
trr
ORR
·Pulse Test: Pulse Width
~
300 ps, duty cycle
~
-
-
2%
2.4
I
20
'0
B
6
iii
2
i
!5
1
a:
B
/~/
......... ~
g:
0.2
~
0.1
0.08
0.06
0.04
,
0.0
"-
-TC" 25'C
J = 150°C MAX.
.........
1'0..
""
"-
.....
~
b....
~"
I
I "II I
4
~o P~
l00"s
6 8 10
20
40 60 80 100
200
VOS. OAAlN·TO.sOUACE VOLT ADE (VOLTS)
-~
2.0
-
~
I
I
I
I
1.8
>CI 1.0
c
I
:i
100ms
~
rl
rrl
a:
0.8
0.6
0.4
I
/
./
./
./ ;rROStON I
./V
~ 1.2
I
I
CONDITIONS:
ROS(ON) CONDITIONS: '0 =1.5 A. VGS =lOV
VGS(TH) CONDITIONS: '0 =250pA. VOS =VGS
~ 1.6
::;;
.gj ,.4
z
I I
10ms
IAFF432IAFj'33_
2.2
N
.........
~
r-;RthJC ::: 5.0KIW
t-- IS LIMITEO BY AOSlon)
S
'1nS,
i-SINGLE PULSE
OPERATION IN THIS AREA
0.02
i"-..
.......
0.4
~
S
"" "-"" i '
."
iii
ns
JJC
- --
-../
.".-
.......
. /V
r-- r--
-::~
~
0.2
I
o
400 600
-40
40
80
120
160
T J • JUNCTION TEMPERATURE I'C)
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
MAXIMUM SAFE OPERATING AREA
300
~o~~~
IRFP150,151
D88FL2,K2
40 AMPERES
100, 60 VOLTS
ROS(ON) =0.055
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
rcs<
r .6'5 ('5.62)y.'2S (3.25)
Features
• Polysilicon gate - Improved stability and reliability
(!':O)
• No secondary breakdown - Excellent ruggedness
2
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
C)
RATING
Drain-Gate Voltage, RGS
= 1Mfl
Continuous Drain Current @ T C
@ TC
= 25°C
= 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ TC
Derate Above 25° C
= 25°C
Operating and Storage
Junction Temperature Range
~I ~~I~
3
~.,oo
(2.54)
.2'9
i5.56)
(unless otherwise specified)
IRFP150/088FL2
IRFP151/088FK2
UNIT
Voss
100
60
Volts
VOGR
100
60
Volts
10
40
25
40
25
A
A
SYMBOL
Drain-Source Voltage
J
.065 (,.65)"1
.00S ('.22)
0
I
.2'5
(5.46)
\. ------L
(LJ
If-'l-I ~-
• Voltage controlled - High transconductance
=25
If. -r
] - + "ll.
1,1
• Ultra-fast switching - Independent of temperature
maximum ratings (Tc
n
10M
160
160
A
VGS
±20
±20
Volts
Po
150
1.2
150
1.2
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
0.83
0.83
ROJA
40
40
°C/W
°C/W
TL
260
260
°C
Watts
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Vs" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
301
electrical characteristics (T c
=25
0
C)
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
UNIT
MIN
TYP
MAX
60
100
-
-
-
250
1000
pA
IGSS
-
±100
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
40
-
-
A
ROS(ON)
-
0.050
0.055
Ohms
gfs
8.1
10
-
mhos
-
2800
3000
pF
1000
1500
pF
-
225
500
pF
25
145
td(off)
-
95
tf
-
75
-
ns
tr
-
-
-
40
A
160
A
1.3
2.5
Volts
-
300
2.8
-
pC
off characteristics
Drain-Source Breakdown Voltage
IRFP151/D88FK2
(VGS = OV, 10 = 250 pA)
IRFP150/D88FL2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TC = 125°C)
BVDSS
loss
. Gate-Source Leakage Current
(VGS = ±20V)
Volts
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 MA)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 20A)
Forward Transconductance
(VOS = 10V, 10,= 20A)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
Crss
switching characteristics*
Turn-on Delay Time
VOS = 30V
Rise Time
10 = 20A, VGS = 15V
Turn-off Delay Time
RGEN = 50.0, RGS = 12.5.0
Fall Time
(RGS (EQUIV.)
td(on)
= 10.0)
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, IS = 40A)
VSO
Reverse Recovery Time
(Is = 40A, dls/dt = 100Alps, Tc = 125°C)
trr
ORR
ns
·Pulse Test: Pulse width:::; 300 p.s, duty cycle:::; 2%
1000
2.4
BOO
600
2.2
400
2.0
iii
ffi
...
~
!zw
a
/
z
~
Jl
....
r--...
100
BO
60
40
20
/\
\
" "'-"
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSIONI
..........
"-
PUL~E
I'-
'-
=
=
I
" "-
r-...
~
1m,
6
8 10
20
40
1.4
r-- r-- t--
1.2
~
1.0
z
tOms
':.. O.B
~
lOOms
0.6
I-""
I-
-
-.
,/
V
_V
l-- ~
a:
IRFP15110B8FK2
k--IRFP150/088FL2
60 60 100
R:;~
1.6
!'l
t---
~~
~
0.4
0.2
DC
I
4
~
a:
~
=
=
1.8
z
Tc ""25OC
I
::;
100",
r-..
r-.. ..........
4
_ SINdLE
~
-"":r-..
10~s
"
/'
10
:
I
o
200
a:
I
I
I
I
CONDITIONS:
ROS(ON) CONDITIONS: 10 20 A, VGS l0V
VGS(TH) CONDITIONS: 10 260"A, VOS VGS
I
200
400 600 1000
-40
VOS' DRAIN-SOURCE VOL TAGE (VOL 151
o
40
BO
120
160
T J • JUNCTION TEMPERATURE ('C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS. TEMP.
302
~D~~
IRFP152,153
33 AMPERES
100, 60 VOLTS
RDS(ON) = 0.08 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
GATE
DRAIN
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
1--.
615 (15.62)-y.128 (3.25)
I- ] -<±1\1lII. -r'
Features
.215
• Polysilicon gate - Improved stability and reliability
(5.46)
(2~~;0)
\.
j,~ .~ )
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
If''065(1'65JII~~l-I ~~.10 (2.54)
(IJ
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
!t-.110 (2.79)
.018 (0.48)1,
--1.
23
I
.048(1.22)~j:.- ~:219
(5.56)
maximum ratings (TC =25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ TC = 25°C
@TC= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
thermal
(unless otherwise specified)
SYMBOL
Voss
VOGR
IRFP152
100
100
33
20
132
±20
150
1.2
IRFP153
60
60
33
20
132
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
0.83
40
0.83
40
°CIW
°CIW
TL
260
260
°C
10
10M
VGS
Po
character~stics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
303
=25° C) (unless otherwise specified)
electrical characteristics (T c
I
ISYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
100
60
-
-
Volts
-
250
1000
pA
±500
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV; 10 =250 pA)
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, Tc =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, TC =125°C)
IRFP152
IRFP153
BVDSS
losS
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
10(ON)
33
-
-
A
-
Gate-Source Leakage Current
(VGS =±20V)
on characteristicS*
Gate Threshold Voltage
(VOS =VGS, 10 =250 p.A)
Tc
=25°C
On-State Drain Current
(VGS =10V, "OS =3.0V)
Static Drain-Source On-State Resistance.
(VGS =10V, 10 =20A)
ROS(ON)
-
0.06
0.08
Ohms
9fs
8.1
10
-
mhos
Ciss
-
2800
3000
pF
1000
1500
pF
-
225
500
pF
-
25
ns
-
95
75
-
-
33
A
132
A
VSO
-
1.2
2.3
Volts
trr
-
300
2.8
-
ns
pC
I
~ONDI+IONS: I
Forward Transconductance
(VOS =2.7V, 10 =20A)
dynamic characteristics
=OV
VOS =25V
f =1 MHz
Input Capacitance
VGS
Output Capacitance
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS
=30V
Rise Time
10 =20A, VGS
td(on)
tr
Turn-off Delay Time
RGEN
td(off)
Fall Time
=15V
=500, RGS =12.50
(RGS (EQUIV.) = 100)
tf
145
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 33A)
Reverse Recovery Time
(Is = 40A, dls/dt = 100A/psec, Tc = 125°C)
-
ORR
·Pulse Test: Pulse width:::; 300 JlS. duty cycle:::; 2%
1000
BOO
600
400
_
2.4
a:
l
!;;w
~
~g
:;;:
10
z
a:
c
_0
\.
\/
/
B
6
2_
1
'"
/
40
20
I
ROS(ON) CONDITIONS: 10 =20 A. VGS =10V
2.0 I--VGS(TH) CONDITIONS: 10 =250pA. VOS =VGS
10a
a:
~
u
I
c
200
III
W
w
I
2.2 I - -
......
OPERATION IN THIS AREA
MAY BE L1MITEO BY RDSIONI
SI~d~;;.~JE
1
I
4
'"
,
......... ...........
"-
\
......
10/Js
:;
~
lOOps
§!
......
"'"
i
1.4
~
1.2
6"
1.0
r--- I--
z
..z a.B
lOms
o
~
lOOms
""-
R:;~
1.6
a:
~ 1m,
r--..
1.8
I_i"'"
0.6
i,....--
---
V
__ i"'"
I--
r--
~~
a:
r-......
_
~
0.4
IRFPI53
IRFP152
~
-
0.2
DC
6 B 10
20
40 60 80 100
200
Vos. DRAIN-SOURCE VOLTAGE (VOL TSI
V
o
400 600 1000
-40
o
40
BO
120
T J. JUNCTION TEMPERATURE lOCI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VGSITHI VS. TEMP.
304
160
IRF~250,251
~o~~LF
D88FN2!M2
30 AMPERES
200, 150 VOLTS
ROS(ON) =0.085 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the. extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
•. Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
.018
maximum ratings (T c = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MH
J~'"' '
(0.46)11-
(unless otherwise specified)
SYMBOL
lI:iFP250/088FN2
UNIT
Voss
200
IRFP251/088FM2
150
VOGR
200
150
Volts
Volts
Continuous Drain Current @ T C = 25° C
@Tc = 100°C
Pulsed Drain Current(1)
10
30
19
30
19
A
A
10M
120
120
A
Gate-Source Voltage
VGS
±20
±20
Volts
Po
150
1.2
150
1.2
Watts
W/o·C
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
0.83
40
0.83
40
°C/W
°C/W
TL
260
260
°c
Total Power Dissipation @ T C = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
305
electrical characteristics (T c = 25° C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
150
200
-
-
Volts
-
250
1000
pA
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
30
-
-
A
ROS(ON)
-
0.075
0.085
Ohms
9fs
7.2
10
-
mhos
Ciss
-
2800
3000
pF
520
1200
pF
120
500
pF
-
20
ns
65
-
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 250 pA)
IRFP251/D88FM2
I RFP250/D88FN2
Zero Gate VoltaQe Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS =OV, Tc =125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(V OS = VGS, 10 = 250 J.lA)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 16A)
Forward Transconductance
(V OS = 10V, 10 = 16A)
dynamic characteristics
Input Capacitance
VGS =OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
Coss
C rss
f = 1 MHz
switching characteristics*
Turn-on Delay Time
VOS = 90V
td(on)
Rise Time
10 = 16A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
tr
td(off)
tf
75
90
ns
ns
ns
source-drain diode ratings and characteristics*
-
30
A
-
120
A
Pulsed Source Current
ISM
-
Diode Forward Voltage
(Tc = 25°C, VGS = OV, IS = 40A)
VSO
-
1.3
2.0
Volts
Reverse Recovery Time
(Is = 30A, dls/dt = 100Alps, Tc = 125°C)
trr
ORR
-
345
4.5
-
pC
Continuous Source Current
Is
ns
·Pulse Test: Pulse width::;; 300 ps, duty cycle::;; 2%
1000
BOO
600
400
iii
2.4
cw
200
0:
l!!
~
...
~
0:
0:
tl
/
1>
'g
6_
\
t....
~
I.B
1.6
PUL~E
I
I
4
~
1.4
r-. ~~~:.
!i!l
~
I'"
>
c
1.0
:if
O.B
l3
1m.
Z
OPERATION IN THIS AREA
MAY BE LlMITEO BY ROSIONI
_ SINdLE
Tc ·25·C
1
'"
"
"
lJJ
ROS(ON) CONOITIONS: 10 16 A. Vas 10V
VaS(TH) CONOITIONS: 10 250pA. VOS Vas
I
I
=
=
=
=
0:
~
""" "'"
"""
/
20
2
~
"
/
'\
2.0
«
::;;
I
C~NDITI6NS:
N
::;
100
BO
60
40
I
2.2
9 0.6
10ms
"
1.2
!!l
r-~
--
/'
i--
.- V
./
V
r--
0:'
"-
0.4
i',00m.
i-oI-IRFP25110B8FM2
~ IRFP25010B8 FN2
DC'
6 B 10
20
40 60 BO 100
200
VDS' DRAIN-SOURCE VOLTAGE (VOLTS)
./
l/
./
/'
ROSIONI-
-- ----
VGSITHI_ I---
0.2
0
400 600 1000
-40
40
80
120
160
T J• JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDslONI AND VGSITHI VS. TEMP.
306
~D~~
IRFP252,253
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
25 AMPERES
200, 150 VOLTS
ROS(ON) = 0.12 !l
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
GATE
DRAIN
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current @TC = 25DC
@Tc= 100DC
Pulsed Drain Current(')
Gate-Source Voltage
Total Power Dissipation @ Tc = 25DC
Derate Above 25 0 C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IRFP252
IRFP253
200
200
25
16
100
±20
150
1.2
150
150
25
16
100
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
WIDC
TJ, TSTG
-55 to 150
-55 to 150
DC
ROJC
ROJA
0.83
40
0.83
40
DC/W
DC/W
TL
260
260
DC
SYMBOL
Voss
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal ReSistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
307
electrical characteristics (Tc = 25° C)
(unless otherwise specified)
CHARACTERISTIC
1 SYMBOL 1 MIN
·1 UNIT
TYP
MAX
200
150
-
-
Volts
-
250
1000
pA
±500
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFP252
IRFP253
BVDSS
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, Tc = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
IGSS
-
-
VGS(TH)
2.0
-
4.0
Volts
On-State Drain Current
(VGS = 10V, VOS = 3.4V)
·IO(ON)
25
-
-
A
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 16A)
ROS(ON)
-
0.10
0.12
Ohms
gfs
7.2
10
-
mhos
Ciss
-
2800
3000
pF
-
520
1200
pF
-
120
500
pF
20
-
ns
75
90
-
ns
65
-
ns
-
25
A
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 250 p.A)
Tc = 25°C
Forward Transconductance
(VOS = 3.1V, 10 = 16A)
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
f = 1 MHz
Reverse Transfer Capacitance
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS= 90V
Rise Time
10 = 16A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
(RGS (EQUIV.) = 100)
-
id(on)
tr
td(off)
tf
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Is
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 25A)
. Reverse Recovery Time
(Is = 30A, dls/dt = 100A/ps, TC = 125°C)
VSO
trr
ORR
-
-
100
A
1.2
1.8
Volts
-
345
4.5
-
pC
ns
·Pulse Test: Pulse width $ 300 ps, duty cycle $ 2%
1000
2.4
600
400
2.2
ili
~
!zw
II:
!5
II:
Q
_0
BO
I
1.8
~
1.6
./
'\
20
/
10
B t!..
6-
"
1\
i'r......, " :~~:.
.................
'"
OPERATION IN THIS AREA
MAY BE LIMITED BY ROSION.
4
i - SINdLE PULkE
.........
20
5i
1.2
"
1.0
~
Im.
.........
.......
~
r-....
40
~
lDms
r-....
........
60 BO 100
:--
z
~ O.B
D~
6 B 10
1.4
:;:
z
I
4
r"-
......
T =2S·C
I
~
-......:
......
40
,,/
0.6
~
---
lL
ROSION'-
/'
II:
.........
60
I
~
::;
u
~
I
~
Q
200
ffi lao
..
I
I
I
I
I
CONDmONS:
ROS(ON) CONDITIONS: 10 = 16 A. VGS = 10V
2.0 f-:-VGS(TH) CONDITIONS: 10 = 250pA. VOS = VGS
BOO
~
t--
~
./
""
r-- t::-----
VGSITH._
:-r--- f--
II:
0.4
100ms
0.2
~:~~
200
o
400 600 1000
Vos. DRAIN-SOURCE VOLTAGE (VOLTS)
-40
o
40
80
120
T J • JUNCTION TEMPERATURE I'C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VOSITHI VS. TEMP.
308
160
~D~[P~lf
IRFP350,351
D88FQ2.Q1
15 AMPERES
400, 350 VOLTS
ROS(ON) = 0.3 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including:-switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
Features
.~
/ II]-0"\1l
1!':0)
\. -.l..
• Polysilicon gate - Improved stability and reliability
.215
15.46)
-IlIlI~ ~.'0012.54)
j,~u
IfIIJ
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
2
~~~
• Excellent thermal stability - Ease of paralleling
maximum ratings (T c
r.615 1,5.62) y . , 2 8 13.25)
.06511.65)"1
.04811.22)
3
.219
15.56)
= 25° C) (unless otherwise specified)
SYMBOL
IRFP350/088FQ2
IRFP351/088FQ1
UNIT
Voss
400
350
Volts
VOGR
400
350
Volts
10
15
15
9
9
A
A
10M
60
60
A
VGS
±20
±20
Volts
Po
150
1.2
150
1.2
Watts
. W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Case
ROJC
0.83
0.83
°C/W
Thermal Resistance, Junction to Ambient
ROJA
40
40
°C/W
TL
260
260
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ T C
@ TC
= 25°C
= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ T C
Derate Above 25° C
= 25° C
Operating and Storage
Junction Temperature Range
thermal characteristics
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
309
electrical characteristics (T c = 25 0 C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVDSS
350
400
-
-
Volts
-
250
1000
JiA
IGSS
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
15
-
-
A
-
0.2S
0.30
Ohms
5.S
S.O
-
mhos
-
2S00
3000
pF
300
SOO
pF
SO
200
pF
-
20
ns
110
-
70
-
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 JiA)
I RFP351 /DSSFQ1
IRFP350/DSSFQ2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x O.S, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
. Gate Threshold Voltage
(VOS = VGS, 10 = 250 /LA)
Tc = 25°C
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = SA)
ROS(ON)
Forward Transconductance
(VOS = 10V, 10 = SA)
gfs
dynamic characteristics
Input Capacitance
VGS=OV
Ciss
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
VOS = 175V
td(on)
Rise Time
10 = SA, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
tr
td(off)
tf
(RGS (EQUIV.) = 100)
25
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 40A)
VSO
Reverse Recovery Time
(Is = 15A, dls/dt = 100AlJis, Tc = 125°C)
trr
ORR
-
-
15
A
SO
A
1.0
1.S
Volts
-
500
S.5
-
ns
JiC
·Pulse Test: Pulse Width :5 300 ps, duty cycle :5 2%
100
, .....
so
60
40
l
m 20
a:
"'
/
\
10
l... :
iii
/'
4
/
gj
z
<1
"
..........
1.0
I:sQ 0.8
0.6
I"-
\
""
-
0.4
0.2 0.1
I
N
1.8
Im,'--
:IE
'(J,
loo~,
c
~z
~
0
II:
IRFP351/088FQl ~
IRrpfl/088F~2-
I
4
"'::;
DC
T -2S·C
I
Q
IOOr'
........
SIN~LE PU~SE
f
10.,-
'I'-..
OPERATION IN THIS AREA
-MAY BE LIMITED BY ROSIONI
I
ROS(ON) CONDITIONS: 10 =8.0 A. VGS = 10V
2.0 t- VGS(TH) CONDITIONS: 10 =250"". VOS =VGS I---+--/---+:"~RO-SIO!-NI---I
,
"
..........
\
2
2.4 '2.2,
......................
r-, " ~
........
'r"-
"" "
\
II:
u
'
......
---
1.2
1.0
0.8
0.6
0.4
-
0.2
0~-_4~0--~-+0--~~40~~~SO~~~12~0--~~'60
400 600 1000
VDS' DRAIN-SOURCE VOLTAGE (VOL TSI
T J • JUNCTION TEMPERATURE I'C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED RDSIONI AND VOSITHI VS. TEMP.
310
~D~~
IRFP352,353
13 AMPERES
400, 350 VOL TS
ROS(ON) = 0.4 il
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
GATE
DRAIN
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
Features
1--.
615 (15.62)y.128 (3.25)
'-r
]- <±1\ II-It
.215
(5.46)
• Polysilicon gate - Improved stability and reliability
(2~1~0)
• No secondary breakdown - Excellent ruggedness
1'~lJ
Ff(IJ
• Ultra-fast switching -Independent of temperature
• Voltage controlled - High transconductance
2
• Low input capacitance - Reduced drive requirement
~~
• Excellent thermal stability - Ease of paralleling
maximum ratings (T C = 25 0 C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @TC = 25°C
@TC= 100°C
Pulsed Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @TC = 25°C
Derate Above 25°C
Operating and Storage
Junction Temperature Range
~
-IlIlI ~ I~ ~.100(2.54)
\.
.065 11.65)..,
.04811.22)
3
.219
15.56)
(unless otherwise specified)
IRFP352
400
400
13
8
52
±20
150
1.2
IRFP353
350
350
13
8
52
±20
150
1.2
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ,TSTG
-55 to 150
-55 to 150
°C
R8JC
R8JA
0.83
40
0.83
40
°C/W
°C/W
TL
260
260
°C
SYMBOL
VOSS
VOGR
10
10M
VGS
Po
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
311
=25
electrical characteristics (Tc
I
0
C)
(unless otherwise specified)
ISYMBOL
MIN
TYP
MAX
UNIT
400
350
-
-
Volts
-
-
250
1000
pA
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
=
10(ON)
13
-
-
A
Static Drain-Source On-State Resistance
(VGS = 10V, 10 BA)
ROS(ON)
-
0.35
0.40
Ohms
gfs
5.6
B.O
-
mhos
Ciss
2BOO
3000
pF
Coss
C rss
-
300
600
pF
60
200
pF
td(on)
-
20
-
ns
=BA, VGS =15V
tr
=50n, RGS = 12.5n td(off)
Fall Time
tf
(RGS (EQUIV.) =10n)
source-drain diode ratings and characteristics*
CHARACTERISTIC
off characteristics
Drain-Source Breakdown Voltage
(VGS OV, 10 250 pA)
=
IRFP352
IRFP353
=
. BVDSS
Zero Gate Voltage Drain Current
(VOS Max Rating, VGS = OV, Tc = 25°C)
(VOS Max Rating, x O.B, VGS = OV, Tc 125°C)
=
=
loss
=
Gate-Source Leakage Current
(VGS ±20V)
=
IGSS
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 250 J.l.A)
Tc
=
=25°C
On-State Drain Current
(VGS 10V, VOS 5.BV)
=
=
Forward Transconductance
(VOS 5.3V, 10 = BA)
=
dynamic characteristics
Input Capacitance
VGS = OV
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
switching characteristics*
Turn-on Delay Time
VOS
=175V
Rise Time
10
-
25
RGEN
-
110
-
ns
Turn-off Delay Time
-
70
-
ns
Is
-
-
13
A
ISM
-
-
52
A
VSO
-
0.9
1.5
Volts
trr
-
500
6.5
-
pC
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(Tc 25°C, VGS = OV, IS
=
=13A)
Reverse Recovery Time
(Is 15A, dls/dt 100Alpsec, Tc
=
=
=125°C)
ORR
ns
ns
·Pulse Test: Pulse Width :5 300 IlS, duty cycle:5 2%
2.4
100
BO
60
40
ffi
/
II:
~
k. . . . .
~
20
\
10
.,-
~... ~
zw
4
II:
~
u
z
«
l!i
I"
-'
v"-
2
1.0
O.B
.,-
\
r-
"""""-
\
""" ,
~
'I"-
......
"-
"
.........
i'...
-
0.4
0.2
r---- SIN~LE pulSE
DC
I'
I
1.2
>"
c
z
1.0
§ OB.
I
I
/'
/l
./
-
-
II:
r-- ......
/
./
./
r--
----
iii 0.6
c
0.4
,,-
V
/
ROS(ONI
/'"
--
-..!G~ -
IRFP352~
0.2
I
4
1.4
~
..:
T "2S0C
0.1
1.6
;:
100~'
IRFP353~
:i
~
lomi
,
OPERATION IN THIS AREA
" 0.6 r--MAY BE L1MITEO BY RDSIONI
1,8
II:
1
"
~
:::;
Im,'-
i'...
"
t----
c
10$.15
100",
........
......
I
I
I
I
I
CONDITIONS:
RDS(ON) CONDITIONS: 10 • B.O A, VGS • IOV
2.0 f--- VGS(TH) CONDITIONS: 10' 250"". VDS' VGS
2.2
6 B 10
20
40 60 80 100
200
V DS ' DRAIN-SOURCE VOLTAGE IVOLTSI
o
400 600 1000
-40
40
BO
120
TJ • JUNCTION TEMPERATURE ('CI
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VaSITHI VS. TEMP.
312
160
~D~[P~U
IRFP451 ~450
D88FR1,R2
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
13 AMPERES
450, 500 VOL TS
ROS(ON) =0.4 n
N-CHANNEL
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters,· converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-247 .
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (Tc = 25 0 C)
RATING
(unless otherwise specified)
SYMBOL
Drain-Source Voltage
Voss
Drain-Gate Voltage, RGS = 1MO
VOGR
Continuous Drain Current @ T C = 25°C
@TC = 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
10
IRFP451/088FR1
450
450
IRFP450/088FR2
500
UNIT
500
Volts
13
8
13
8
A
A
Volts
10M
52
52
A
VGS
±20
±20
Volts
Po
150
1.2
150
1.2
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
ROJA
0.83
40
0.83
40
°C/W
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
313
=25° C) (unless otherwise specified)
electrical characteristics (T c
I
CHARACTERISTIC
, SYMBOL'
MIN
TYP
,.
MAX
UNIT
BVDSS
450
500
-
-
Volts
-
-
250
1000
pA
IGSS
-
-
±500
nA
VGS(TH)
2.0
-
4.0
Volts
10(ON)
13
-
-
A
ROS(ON)
-
0.3
0.4
Ohms
gfs
4.8
7.0
-
mhos
-
2800
3000
pF
330
600
pF
55
200
pF
-
25
ns
20
-
-
120
-
ns
65
-
ns
-
13
A
52
A
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 pA)
IRFP451/D88FR1
I RFP450/D88FR2
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TC = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, Tc = 125°C)
loss
Gate-Source Leakage Current
(VGS = ±20V)
on characteristics*
Tc = 25°C
Gate Threshold Voltage
(V OS = VGS, 10 = 250 J.l.A)
On-State Drain Current
(VGS = 10V, VOS = 10V)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 7A)
Forward Transconductance
(VOS = 10V, 10 = 7A)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
VOS = 225V
Turn-on Delay Time
td(on)
Rise Time
10 = 7A, VGS = 15V
Turn-off Delay Time
RGEN = 500, RGS = 12.50
Fall Time
tr
td(off)
(RGS (EQUIV.) = 100)
tf
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
-
Diode Forward Voltage
(Tc = 25°C, VGS = OV, Is = 40A)
VSO
-
0.7
1.4
trr
-
590
7.4
-
Continuous Source Current
Is
Reverse Recovery Time
(Is = 13A, dls/dt = 100Alps, Tc = 125°C)
ORR
ns
-
pC
'Pulse Test: Pulse width $ 300 /ls, duty cycle $ 2%
100
2.4
BO
60
40
ffi
20
II:
~
~
...
iii
II:
~
u
".~ ..........
~
l
/
10
:
is
......
v". \
2
O.B
C 0.6
- 0.4
..........
:'-..
\
f- OPERATION IN THIS AREA
f- MAY BE LIMITED BY ROSIONI
0.2
f-- SIN~LE PU~SE
O. 1
T
Tc=2SDC
I
4
..........
"'-
OJ
N
10IJs
100.,
..........
..........
:;
CbNDITI~NS:
I
I
=
=
l/
=
=
./
/
«
:IE
1.6
0
2
1.4
~
l~mj
>'"
0
2
1'001.
«
Z
g
1"..........
IRFP451/0BBFRl . .
IRii450/0BrR2 -
1.8
/
l!l
1.2
O.B
II:
I
r--
1.0
0.6
,..-
.--
-..-
i-- . /
,/
'"
./
r--
0.4
C
ROSIONI
/"
II:
li't......
"-
6 8 10
20
40 60 BO 100
200
VOS' DRAIN-SOURCE VOLTAGE (VOL TSI
I
0
'
"-
I
-
ROS(ON) CONDITIONS: 10 7.0 A. VGS 10V
2.0 - VGS(TH) CONDITIONS: 10 250~A. VOS VGS
'r-,.' ~
,~
..........
......
4
1.0
,
/
2
C
/1'
1.4
1.2
r---
1.0
--
-:. O.B
z
I
a:
Dt
i
IRFP453~
0.2 I- SING1LE PUL1E
IRFP4S2 - - - ;
T =2SoC
C1
I
D. 1
4
6 B 10
20
40 60 BO 100
200
400 600 1000
Vas' DRAIN-SOURCE VOLTAGE IVOLTSI
0.6
ROS(ONI
L
1.6
Z
~o
/
1.B
CI
II
lOOms
/
,..-
0.4
~
L.
t-
/
/'
",
r-- r--
VGSITHI
-r--
-
0.2
I
-40
40
60
120
160
TJ , JUNCTION TEMPERATURE I'C)
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED ROSIONI AND VGSITHI VS, TEMP.
316
~D~[P~lY
D80AK2,L2
FIELD EFFECT POWER TRANSISTOR
0.45 AMPERES
60, 100 VOLTS
RDS(ON) =2.4 n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
N~:ANNE~
,
M"~ ~
fi
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications' such as audio amplifiers and servo motors.
DRAIN
CASE STYLE TO-237
.S
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
---.-----i-----;~
.105(2.671
.095(2.411
---r
Features
~71
• Polysilicon gate - Improved stability and reliability
SEATING
PLANE
• No secondary breakdown - Excellent ruggedness
.250(6.351
~
~or
.016(.41)
- L -_ _
• Ultra-fast switching - Independent of temperature
[
.016(.461 & .016(.411]
.016(.411
.014(.36)
D0O~or [
.016(.411
.0221.561 & .020(.511 ]
.016(.411
.014(.361
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
maximum ratings (TA
= 25
0
C)
RATING
(unless otherwise specified)
SYMBOL
D80AK2
D80AL2
UNIT
Voss
60
100
Volts
VOGR
60
100
Volts
10
0.45
0.60
0.45
0.60
A
A
Pulsed Drain Current(3)
10M
4.0
4.0
A
Gate-Source Voltage
VGS
±20
±20
Volts
Po
1.0
1.0
8
8
Watts
mW/oC
Po
2.0
40
2.0
40
Watts
mW;aC
TJ, TSTG
-55 to 150
-55 to 150
°c
ROJC
ROJA
25
125
25
125
°C/W
°C/W
h
300
300
°c
Drain-Source Voltage
Drain-Gate Voltage, RGS
=1Mn
Continuous Drain Current @ T A = 25 0 C(1)
@Tc =100°C(2)
Total Power DisSipation @ T A = 25 0 C(l)
Derate Above 25° C
Total Power Dissipation @ TC
Derate Above 100 0 C
=100°C(2)
Operating and Storage
Junction Temperature Range
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Device Lead Mounted in Free Air, No Heatsink.
(2) Device Tab Soldered to Heatsink.
317
(3) Repetitive Rating: Pulse Width Limited by Max.
Junction Temperature
= 25° C)
electrical characteristics (TA
I
(unless otherwise specified)
I SYMBOL I
MIN
TVP
MAX
UNIT
BVOSS
60
100
-
-
Volts
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV, TA =25°C)
(VOS =Max Rating, x 0.8, VGS =OV, TA =125°C)
loSS
-
-
250
1000
J.LA
Gate-Source Leakage Current
(VGS =±20V)
IGSS
-
-
±500
nA
25°C
VGS(TH)
2.0
-
4.0
Volts
=0.25A
=0.45A
=0.25A, TA =125°C
VOS(ON)
-
0.55
1.05
0.90
0.60
Volts
ROS(ON)
-
2.2
2.4
Ohms
gfs
-
0.2
-
mhos
Ciss
-
36
70
pF
Coss
C rss
-
20
30
pF
7
10
pF
td(on)
-
6
-
ns
6
-
ns
12
,-
ns
7
-
ns
A
CHARACTERISTIC
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 J.LA)
D80AK2
D80AL2
on characteristics*
Gate Threshold Voltage
=VGS, 10 =250 J.LA)
Drain-Source On-State Voltage
(VGS =10V)
TA
("os
10
10
10
=
Static Drain-Source On-State Resistance
(VGS =10V, 10 =0.25A)
Forward Transconductance
(VOS = 10V, 10 =0.25A)
-
-
dynamic characteristics
Input Capacitance
VGS
Output Capacitance
VOS
Reverse Transfer Capacitance
f
=OV
=25V
=1 MHz
switching characteristics*
=30V
=0.25A, VGS =15V
RGEN =50 n, RGS =12.5 n
(RGS (EQUIV.) =10n)
Turn-on Delay Time
VOS
Rise Time
10
Turn-off Delay Time
Fall Time
tr
tdloff)
tf
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
Diode Forward Voltage
(TA =25° C, VGS =OV, Is =0.45A)
Reverse Recovery Time
(Is =0.45A, dls/dt =100AlJ.Ls, VOS
VSO
-
trr
-
Continuous Source Current
IS
=45 V Max., TA =125°C)
-
0.45
4.0
A
0.9
1.4
Volts
65
-
ns
'Pulse Test: Pulse width::; 300 J.LS, duty cycle::; 2%
2.4
i"f
~
~~
5
~
9
""'
0,1
" "I"""~'"
" "" ~
.01
~
r
I
a:
1.2
O.B
0.6
0.4
0.2
TAl = 25°C
' " DC
_ _~_'--"""_ _
10
20
50
100
~--'
1
lOOms
""""'-"''='''''''_ _
200
=
=
I
=10V
=VGS
V
/V
-r--
1.0
-+---1
Ii"
I
.ROS(ON) CONDITIONS: 10 0.25 A. VGS
VGS(TH) CONDITIONS: 10 250pA. VOS
1.4
I- SINGLE PULSE +---t--+-----'k:f---f--+--I---c-i
I
I
RDS(ON)/,
J
"
I=t:+==+==!s;;;::~~=+~$);;;::t==:::j:==I
"
"
,,10ms
r-
!--
.
CONDITIONS
1.6
0
Z
1ms
OPERATION IN THIS AREA -+~~-Pk-+"-..;:;::. DBOAK2
MAY BE LIMITED BYRDS(ON)
" " .......... __ DBO:AL2
2.0
I
I
a:
"
"
I---
1.B
i
:-- //;NO, "'"
1,0 ~~/~S;;:::::"t:::S:k",,=~~~~:j:f~i1cl00iO,pS;st==+=:::j
!i1
"
lOpS
I
2.2
:-
I-"
---
,.~
I--
~
. . .V
r-- ~ r---
-r--
VGS(TH)
r-
J.-~
-40
500
40
BO
120
160
T J.JUNCTION TEMPERATURE eC)
Vos. DRAIN-SOURCE VOLTAGE (VOLTS)
TYPICAL NORMALIZED ROS(ON) AND VGS(TH)VS. TEMP.
MAXIMUM SAFE OPERATING AREA
318
~~o~~~u
D80AM2,N2
0.32 AMPERES
150,200 VOLTS
RDS(ON) = 5.0 n
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device ruggedness and reliability.
"
fi
N:::ANNE~
o"'~
~
DRAIN
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
CASE STYLE TO-237·
S
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
-.---i-----.;--.L
.105(2.67)
.095(2.41)
~
Features
~27)
'-n-TTTr-'
• Polysilicon gate -
Improved stability and reliability
SEATING
PLANE
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching • Voltage controlled -
[
-'--__ 00O~or [
~
~or
.016(.41)
Independent of temperature
.016(.41)
.018(.46) & .016(.41)]
.0161.41)
.014(.36)
.022(.56) & .020(.51) ]
.016(.41)
.014(.36)
High transconductance
• Low input capacitance -
Reduced drive requirement
• Excellent thermal stability -
maximum ratings (TA
Ease of paralleling
= 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS
.250(6.35)
(unless otherwise specified)
SYMBOL
=1Mfl
Continuous Drain Current @ TA = 25°C(1)
@ TC =100°C(2)
Pulsed Drain Current(3)
Gate-Source Voltage
Voss
VOGR
10
D80AM2
150
150
D80AN2
200
200
UNITS
Volts
Volts
0.32
0.43
0.32
0.43
A
A
10M
1.5
1.5
A
±20
Volts
VGS
±20
Total Power Dissipation @ TA
Derate Above 25° C
=25°C(1)
Po
1.0
1.0
8
8
Watts
mWrC
Total Power Dissipation @TC
Derate Above 100° C
=100°C(2)
Po
2.0
40
2.0
40
Watts
mW/oC
TJ, TSTG
-55 to 150
-55 to 150
°c
Operating and Storage
Junction Temperature Range
thermal characteristics
Thermal Resistance, Junction to Case
ROJC
25
25
°C/W
Thermal Resistance, Junction to Ambient
ROJA
125
125
°C/W
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
h
300
300
°c
(1) Device Lead Mounted in Free Air, No Heatsink. (2) Device Tab Soldered to Heatsink.
(3) Repetitive Rating: Pulse Width Limited by Max. Junction Temperature.
319
electrical characteristics (TA
=25° C) (unless otherwise specified)
ISYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNIT
150
200
-
-
Volts
-
250
1000
pA
-
±5oo
nA
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 =250 pA)
D80AM2
D80AN2
BVDSS
-
-
Zero Gate Voltage Drain Current
(VOS = Max Rating, V~s =OV, T A =25°C)
(VOS = Max Rating, x .8, VGS =OV, TA =125°C)
loss
Gate-Source Leakage Current
(VGS =±20V)
IGSS
-
VGS(TH)
2.0
-
4.0
Volts
VOS{ON)
0.66
1.41
1.05
0.75
Volts
ROS{ON)
-
4.4
5.0
Ohms
gfs
-
0.11
-
mhos
Ciss
-
37
70
pF
15
25
8
pF
pF
15
-
ns
A
on characteristics*
Gate Threshold Voltage
(VOS =VGS, 10 =250 JlA)
TA
10 =0.15A
10 =0.32A
10 =0.15A, TA
Drain-Source On-State Voltage
(VGS =10V)
=25°C
=125°C
Static Drain-Source On-State Resistance
(VGS =10V, 10 =0.15A)
Forward Transconductance
(VOS =10V, 10 =0.15A)
-
dynamic characteristics
=OV
VOS =25V
f =1 MHz
Input Capacitance
VGS
Output Capacitance
Reverse Transfer Capacitance
Coss
C rss
4
switch i ng characteristics *
=90V
td(on)
Rise Time
10 =0.15A, VGS
tr
-
Turn-off Delay Time
RGEN
id(off)
-
22
tf
-
28
-
0.32
Turn-on Delay Time
VOS
=15V
=500, RGS =12.50
(RGS (EQUIV.) =100)
Fall Time
10
ns
ns
ns
source-drain diode ratings and characteristics*
Pulsed Source Current
ISM
-
1.5
A
Diode Forward Voltage
(TA =25°C, VGS =OV, Is
VSO
-
0.86
1.3
Volts
trr
-
125
-
Continuous Source Current
IS
=0.32A)
Reverse Recovery Time
(IS =0.32A, dis/dt =100Alps, VOS
=80V max., TA =125°C)
ns
Pulse Test: Pulse width:5 300 JlS, duty cycle:5 2%
2.4
10
I
8
6
2.2
I--
2.0 I - -
in
w
a;
~
~... ~:
ffi
"-
'\
0.4
a;
a;
~
u
0.2
O. 1
.08
jl
.06
"'-
I,
,
\
"
.04
.02
SINGLE PULSE
TA ;2S°C,
1
5
"'-
10
20
"
I'" "-
1.6
~
1.4
~
I
I
ROSIONI
"z
I"-
o
~
a;
...... 10m.
-D80AM2
-OBOAI2 ..... 100m.
200
500
O.B
~
. /~
-
--
V
-
~
r--0.6
. . .V
I--I--VGSITHI -
-
0.4
~-
100
1.2
>'" 1.0
c
z
...... 1m.
~
50
1.8
~
;:
100115
1'0..
~
"-
&1
::;
I
CONDITIONS
ROS(ON) CONDITIONS: 10; 0.15 A, VGS; 10V
VGS(TH) CONOITIONS: 10 = 250~P<, VOS = VGS
a;
'" r"...... "
"
" " b......
.....
OPERATIbN IN THIS AREA
MAY BE LIMITED BY ROSIONI
.01
"
"-
10~s
1'0..
z
:;;:
~
"-
"'-
1
N
I
I
0.2
o
1000
-40
40
BO
120
160
T J. JUNCTION TEMPERATURE ('CI
Vos. DRAIN-SOURCE VOLTAGE (VOLTSI
TYPICAL NORMALIZED RDSIONI AND
MAXIMUM SAFE OPERATING AREA
320
VGSITHI VS.
TEMP.
~VN5000~1
~D~~lf
AN Series
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operating area with good linear transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
.7 AMPERES
40-100 VOLTS
ROS(ON) =2.5 n
~,,~
~
DRAIN
CASE STYLE TO-237
S
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
-.---~-....;~
.10512.67)
Applications
•
•
•
•
•
•
"
fi
N::ANNE~
.09512.41)
~
LED and lamp drivers
High gain, wide-band amplifiers
High speed switches
Line drivers
Logic buffers
Pulse amplifiers
'-rr-TT'Tr
SEATING
PLANE
.250(6.35)
~7)
-----,
[
-'--__ D0O~or [
~
~or
.0161.41)
.0181.46) & .016(.41)]
.016(.41)
.0141.36)
.016(.41)
.022(.56) & .020(.51) ]
.0161.41)
.014(.36)
Features
•
•
•
•
•
•
High speed, high peak current switching
Inherent current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple, straight-forward DC biasing
Inherent protection from thermal runaway
Reliable, low cost plastic package
maximum ratings (TA
= 25° C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1MCl
Continuous Drain Current @ T A = 25°C
Peak Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TA =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
Voss
VDGR
0
40
40
E
60
60
F
80
80
H
100
100
UNITS
Volts
Volts
10
0.7
0.7
0.7
0.7
A
10M
VGS
Po
2.0
±30
2.0
16
2.0
±30
2.0
16
2.0
±30
2.0
16
2.0
±30
2.0
16
A
Volts
Watts
mW/oC
SYMBOL
TJ, TSTG
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
thermal characteristics
Thermal Resistance, Junction to Ambient
ROJA
62.5
62.5
62.5
62.5
°CIW
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
TL
300
300
300
300
°C
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
321
electrical characteristics (TA
I
=25° C) (unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
I
TYP
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 10 p.A)
IVN5000,1AND
IVN5000,1 ANE
IVN5000,1ANF
IVN5000,1 ANH
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV)
(VOS = Max Rating, x 0.8, VGS = OV, TA = 125QC)
Gate-Source Leakage Current
(VGS = 15V, VOS = OV)
(VGS = 15V, VOS = OV - TA = 125 QC)
BVDSS
40
60
80
100
-
-
Volts
loss
-
-
10
500
p.A
-
-
-
10
50
nA
nA
.8
.8
-
2.0
3.6
Volts
Volts
-
-
2.0
1.9
2.5
2.5
Volts
-
2.0
1.9
2.5
2.5
Ohms
Ohms
10(ON)
1.0
1.0
-
Amp
Amp
gfs
.17
.28
-
mhos
-
40
50
pF
27
40
pF
6
10
pF
-
2
5
ns
2
5
ns
2
5
ns
2
5
ns
IGSS
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 1 mA)
Drain-Source Saturation Voltage
(VGS = 10V, 10 = 1.0A)
(VGS = 12V, 10 = 1.0A)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.0A)
(VGS = 12V, 10 = 1.0A)
On-State Drain Current
(VOS = 24V, VGS = 10V)
(V OS = 24V, VGS = 12V)
Forward Transconductance
(VOS = 24V, 10 = 0.5A, f = 1 KHz)
IVN5000
IVN5001
IVN5000
IVN5001
IVN5000
IVN5001
IVN5000
IVN5001
VGS(TH)
VOS(ON)
ROS(ON)
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 24V
Reverse Transfer Capacitance
f = 1 MHz
Coss
C rss
switching characteristics*
Turn-on Delay Time
td(on)
See switching times
waveform below
; Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
'Pulse Test: Pulse width :5 300 ps, duty cycle :5 2%
INPUT
OUTPUT
50%
10%
}.-~1
10%~,,
Id~
~0%~~1~0%~
_ _ _ _ _V - , , 1
SWITCHING TIME TEST WAVEFORMS
322
~~D~[F~
IVN5000,1
TN Series
FIELD EFFECT POWER TRANSISTOR
1.2 AMPERES
40-100 VOLTS
ROS(ON) = 2.5 n
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
4
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operati ng area with good Ii near transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
CASE STYLE TO-20SAD (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Applications
•
•
•
•
•
•
0.350-0.370
(8.890-9.398)
LED and lamp drivers
High gain, wide-band amplifiers
High speed switches
Line drivers
Logic buffers
Pulse amplifiers
...---:-r---j
0.315-0.335
(8.00'-8.509)
SEATING
PLANE
Features
•
•
•
•
•
•
High speed, high peak current switching
Inherent current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple, straight-forward DC biasing
Inherent protection from thermal runaway
Reliable, low cost plastic package
maximum ratings (TA = 25 0 C)
(unless otherwise specified)
SYMBOL
Voss
VOGR
40
40
E
60
60
F
80
80
H
100
100
UNITS
Volts
Volts
10
1.2
1.2
1.2
1.2
A
Peak Drain Current(1)
10M
Gate-Source Voltage
Total Power Dissipation @TA = 25°C
Derate Above 25°C
Operating and Storage
Junction Temperature Range
VGS
Po
3.0
±30
6.25
50
3.0
±30
6.25
50
3.0
±30
6.25
50
3.0
±30
6.25
50
A
Volts
Watts
mW/oC
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ T A = 25°C
TJ, TSTG
0
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
R8JA
20
20
20
20
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
h
300
300
300
300
°C
(1) Repetitive Rating: Pulse width limited by max. junction temperature .
. 323
electrical characteristics· (TA
I
=25° C) (unless otherwise specified)
I SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNIT
40
60
80
100
-
-
Volts
-
-
10
SOO
pA
-
-
-
10
SO
nA
nA
.8
.8
-
2.0
3.6
Volts
Volts
-
2.0
1.9
2.S
2.S
Volts
-
2.0
1.9
2.S
2.S
Ohms
Ohms
1.0
1.0
-
-
Amp
Amp
gfs
.17
.28
-
mhos
Ciss
-
40
SO
pF
Coss
C rss
-
27
40
pF
-
6
10
pF
td(on)
2
S
ns
tr
-
2
S
ns
td(off)
-
2
S
ns
tf
-
2
S
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS OV, 10 10 pA)
=
D
=
F
H
Zero Gate Voltage Drain Current
(VOS Max Rating, VGS OV)
(VOS Max Rating, x 0.8, VGS OV, TA
Gate-Source Leakage Current
(VGS 1SV, VOS OV)
(VGS 1SV, VOS OV - TA 12S DC)
=
=
=
=
=
BVDSS
E
=
=
=
loSS
=12SDC)
IGSS
=
-
on characteristics*
Gate Threshold Voltage
(VOS VGS, 10 1 mAl
Drain-Source Saturation Voltage
(VGS 10V, 10 1.0A)
(VGS 12V, 10 1.0A)
Static Drain-Source On-State Resistance
(VGS 10V, 10 1.0A)
(VGS 12V, 10 1.0A)
On-State Drain Current
(VOS 24V, VGS 10V)
(VOS 24V, VGS 12V)
Forward Transconductance
(VOS 24V, 10 O.SA, f 1 KHz)
=
=
IVNSOOO
IVNS001
=
=
=
=
IVNSOOO
IVNS001
=
=
=
=
=
=
=
IVNSOOO
IVNS001
=
=
=
IVNSOOO
IVNS001
=
VGS(TH)
VOS(ON)
ROS(ON)
.IO(ON)
dynamic characteristics
Input Capacitance
=OV
VOS =24V
f =1 MHz
VGS
Output Capacitance
Reverse Transfer Capacitance
switching characteristics*
Turn-on Delay Time
See switching times
waveform below
Rise Time
Turn-off Delay Time
Fall Time
'Pulse Test: Pulse width::; 300 j1S, duty cycle::; 2%
rpULSEWIDTH4
50%
INPUT
OUTPUT
ITOO·/.
9on-I
10%
10%
-~~t~%~~;~·I . . ___td...,tt'~
SWITCHING TIME TEST WAVEFORMS
324
~ffi3D~ [F~u
VN10KMA
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operating area with good linear transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
Applications
•
•
•
•
•
•
0.5 AMPERES
60 VOLTS
RDS(ON) =5.0 0
""'~
~
DRAIN
CASE STYLE TO-237
s
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
- x - - - i - - - - ; - - .105(2.67)
-L
--,
.095(2.41)
LED and lamp drivers
TTL and CMOS to high current interface
High speed switches
Line drivers
Relay drivers
Transformer drivers
~7)
--L-...-~.- L"TT""I'T"Tr'
SEATING
PLANE
.250(6.35)'
1....
~
--,-
~or
.016(.41)
[
.016(.46) & .016(.41) ]
.016(.41)
.014(.36)
__nnD~or [
.016(.41)
Features
•
•
•
•
•
•
"
fi
N::":ANNE~
.022(.561 & .020(.51) ]
.016(.41)
.014(.36)
Directly drives inductive loads
High speed, high peak current switching
Inherent current sharing capability when paralleled
Directly interfaces to CMOS, DTL, TTL logic
Simple straight-forward DC biasing
Inherently procection from thermal runaway
maximum ratings (TA =25° C)
(unless otherwise specified)
Voss
VOGR
VN10KMA
60
60
UNITS
Volts
Volts
10
0.5
A
10M
VGS
Po
1.0
±30
1.0
8
A
Volts
Watts
mW/oC
T.I, T!,;Tr,
-55 to 150
°C
Thermal Resistance, Junction to Ambient
ReJA
20
°CIW
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
TL
300
°C
SYMBOL
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
Continuous Drain Current @ TA = 25°C
Peak Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @TA
Derate Above 25° C
Operating and Storage
Junction Temperature Range
=25°C
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
325
electrical characteristics (TA
I
=25° C) (unless otherwise specified)
CHARACTERISTIC
I
I SYMBOL I
MIN
BVDSS
60
-
-
loss
-
-
10
pA
IGSS
-
-
100
nA
VGS(TH)
0.8
-
2.5
Volts
VOS(ON)
-
-
2.5
V
10(ON)
0.25
0.50
-
A
9fs
.10
.20
-
TYP
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV. 10 = 100 pA)
Zero Gate Voltage Drain Current
(VOS = 40V. VGS = OV)
Gate-Source Leakage Current·
(VGS = 15V. VOS = OV)
Volts
on characteristics*
Gate Threshold Voltage
(VOS = VGS. 10 = 1 mAl
Drain-Source Saturation Voltage
(VGS = 10V. 10 = .5A)
On-State Drain Current
(Vos = 25V. VGS = 5V)
(VOS = 25V. VGS = 10V)
Forward Transconductance
(V OS = 15V. 10 = 0.5A) .
mhos
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
-
48
Output Capacitance
VOS = 25V
f = 1 MHz
Coss
C rss
-
16
td(on)
-
5
td(off)
-
2
Reverse Transfer Capacitance
2
-
pF
pF.
pF
switching characteristics*
Turn-on Delay Time
See switching times
waveform below
Turn-off Delay Time
'Pulse Test: Pulse width:::;; 300 p.s. duty cycle:::;; 2%
50%
INPUT
OUTPUT
10%
10%
--~~t.......:~____td_tt'~
SWITCHING TIME TEST WAVEFORMS
326
-
ns
ns
VN30ABA
Series
~D~[?~
1.2 AMPERES
35-90 VOLTS
ROS(ON) = 2.S-S.0 il
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
4
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operating area with good linear transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
CASE STYLE TO-20SAD (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0,350-0,370
(B,B90-9,39B)
Applications
•
•
•
•
•
•
0,315-0,335
(B,001-B,509)
Switching power supplies
DC to DC inverters
CMOS and TTL to high current interface
Line drivers
Logic buffers
Pulse amplifiers
Features
•
•
•
•
•
•
High speed, high current switching
Current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple DC biasing
Extended safe operating area
Inherently temperature stable
maximum ratings (TA
=25° C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ T A = 25°C
Peak Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ T A = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
Voss
VOGR
VN30ABAI
VN3SABA
35
35
VN67ABA
60
60
VN89ABA
80
80
VN90ABA
90
90
UNITS
Volts
Volts
10
1.2
1.2
1.2
1.2
A
10M
VGS
Po
3.0
±30
6.25
50
-55 to
150
3.0
±30
6.25
50
-55 to
150
3.0
±30
6.25
50
-55 to
150
A
Volts
Watts
mW/oC
TJ, TSTG
3.0
±30
6.25
50
-55 to
150
ReJA
20
20
20
20
°C/W
TL
300
300
300
300
°C
SYMBOL
I
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1116" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
327
electrical characteristics (TA
I
=25° C) (unless otherwise specified)
I SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNIT
35
60
80
90
-
-
Volts
-
10
f.1A
IGSS
-
100
nA
VGS(TH)
0.8
1.2
-
Volts
ROS(ON)
-
-
6.0
4.5
5.1
5.1
6.0
Ohms
-
Ohms
-
5.0
2.5
3.5
4.5
5.0
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 10 f.1A)
VN30ABA;VN35ABA
VN67ABA
VN89ABA
VN90ABA
BVDSS
Zero Gate Voltage Drain Current
(VOS = 25, VGS = OV)
Gate-Source Leakage Current
(VGS = 15V, VOS = OV)
loss
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 1 mAl
Static Drain Source On-State Resistance
(VGS = 5V)
(10 = 0.3A)
VN30ABA
VN35ABA
VN67ABA
VN89ABA
VN90ABA
VN30ABA
VN35ABA
VN67ABA
VN89ABA
VN90ABA
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.0A)
ROS(ON)
On-State Drain Current
(VOS = 25V, VGS = 10V)
Forward Transconductance
(VOS = 25V, 10 = 0.5A)
-
-
10(ON)
1
-
-
Amp
gfs
-
.25
-
mhos
-
-
50
pF
-
40
pF
-
-
10
pF
-
-
10
ns
10
ns
dynamic characteristics
Input Capacitance
VGS = OV
Ciss
Output Capacitance
VOS = 24V
f = 1 MHz
Coss
C rss
Reverse Transfer Capacitance
switching characteristics *
Turn-on Delay Time
td(on)
See switching times
waveforms below
Turn-off Delay Time
td(off)
'Pulse Test: Pulse width :5 300 (.1S, duty cycle :5 2%
50%
INPUT
OUTPUT
10%
10%
X~1
1~~,-
loff=!
t_d.Jk~l~O~%-
____
SWITCHING TIME TEST WAVEFORMS
328
VN35AK
Series
~D~[f~
1.2 AMPERES
35-90 VOLTS
ROS(ON) =2.5-4.5 il
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operati ng area with good Ii near transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
N-CHANNEl
~
CASE STYLE TO-20SAD (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.35().Q.370
(8.890·9.398)
Applications
•
•
•
•
•
•
High current analog switches
RF power amplifiers
Laser diode pulsers
Line drivers
Logic buffers
Pulse amplifiers
......----+:0------;
0.315·0.335
(8.001-8.509)
0.019-0.033
SEATING
PLANE
Features
•
•
•
•
•
•
High speed, high current switching
High gain-bandwidth product
Inherently temperature stable
Extended safe operating area
Simple DC biasing
Requires almost zero current drive
0.029-0.045
(0.737-1.143)
0.028-0.034
(0.711-0.864)
TERM. 1
SOURCE
maximum ratings (TA =25°C)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current @ TA = 25°C
Peak Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @TA = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
TERM. 2
GATE
(unless otherwise specified)
VN66AKl67AK VN98AK/99AK
60
90
60
90
SYMBOL
Voss
VOGR
VN35AK
, 35
35
UNITS
Volts
Volts
10
1.2
1.2
1.2
10M
VGS
Po
3.0
±30
6.25
50
3.0
±30
6.25
50
3.0
±30
6.25
50
TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
°C
R8JA
20
20
20
°CIW
TL
300
300
300
°C
A
J
A
Volts
Watts
mW/oC
thermal characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
329
electrical characteristics (TA
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
BVDSS
35
60
90
-
-
Volts
loSS
-
-
10
500
IlA
100
500
nA
nA
VGS(TH)
0.8
2.0
Volts
VOS(ON)
3.0
4.0
Volts
VOS(ON)
-
-
2.5
3.5
4.5
Volts
10(ON)
1.0
-
-
Amps
gfs
.170
-
-
mhos
Ciss
-
-
50
pF
40
pF
-
10
pF
3
8
ns
3
8
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS OV, 10 10 p.A)
=
VN35AK
VN66/67AK
VN98/99AK·
=
Zero Gate Voltage Drain Current
(VOS Max Rating, VGS == OV)
(VOS Max Rating, x 0.8, VGS OV, TA
Gate-Source Leakage Current
(VGS 15V, VOS OV)
(VGS 15V, VOS OV - TA 125 DC)
=
=
=
=
=
=
=
=125DC)
IGSS
=
on characteristics*
Gate Threshold Voltage
(VOS VGS, 10 1 mAl
Drain-Source Saturation Voltage
(VGS 10V, 10 1.0A)
Drain-Source Saturation Voltage
(VGS 10V, 10 1.0A)
=
=
=
=
=
=
VN66AK
VN98AK
VN35AK
VN67AK
VN99AK
On-State Drain Current
(VOS 25V, VGS 10V)
Forward Transconductance
(VOS 24V, 10 0.5A)
=
=
=
=
-
dynamic characteristics
Input Capacitance
VGS
Output Capacitance
VOS
Reverse Transfer Capacitance
f
=OV
=24V
Coss
C rss
=1 MHz
switching characteristics*
Turn-on Delay Time
Turn-off Delay Time
-
td(on)
See switching times
waveform below
td(off)
'Pulse Test: Pulse width :5 300 ps, duty cycle :5 2%
50%
INPUT
10%
10%
OUTPUT
SWITCHING TIME TEST WAVEFORMS
330
VN40AFA
Series
~D~[P~U
1.2 AMPERES
40-80 VOLTS
ROS{ON) = 3.5-5.0 0
FIELD EFFECT POVVER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operating area with good linear transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
N-CHANNEL
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Applications
•
•
•
•
•
•
Switching power supplies
DC to DC inverters
CMOS and TTL to high current interface
Line drivers
Logic buffers
Pulse amplifiers
0.480-0.520
t 12.192-13,2081
0285-0.315
(7.237-8.001)
X 45"
\~~ :3~
Features
•
•
•
•
•
•
0.405-0.425
110.287-10.795)
High speed, high current switching
Current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple DC biasing
Extended safe operating area
Inherently temperature stable
maximum ratings (TA
=25
0
C)
0.065-0075
(1.651-1905)
0050
CHAMFER
~
~
~
3
0095-0105
(2413-2667)
0026
(0 660)
~II_
+l
~0095-0 105
r:.-
l
~
(2413-2667)
~
0170-0190
;7(4:iii318i"i_4~82~6)
0019-0026
--(0483-0 660)
0095-0106
(2 413-2 667)
(unless otherwise specified)
Voss
VOGR
VN40AFA
40
40
VN67AFA
60
60
VN89AFA
80
80
UNITS
Volts
Volts
10
1.2
1.2
1.2
A
10M
VGS
Po
3.0
±30
12
96
3.0
±30
12
96
3.0
±30
12
96
Volts
Watts
mW/oC
TJ, TSTG
-40 to 150
-40 to 150
-40 to 150
°C
Thermal Resistance, Junction to Ambient
RSJA
10.4
10.4
10.4
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
TL
300
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1MO
Continuous Drain Current @ T A = 25°C
Peak Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ TA = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
A
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
331
electrical characteristics (TA = 25° C)
(unless otherwise specified)
I SYMBOL I·
CHARACTERISTIC
I
TYP
MAX
40
60
BO
-
-
-
-
-
10
100
p.A
-
100
500
nA
nA
MIN
1
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 == 10 p.A)
VN40AFA
VN67AFA
VN89AFA
BVDSS
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV)
(VOS = Max Rating, x O.B, VGS = OV, T A = 1250 C)
Gate-Source Leakage Current
(VGS = 15V, VOS = OV)
(VGS = 15V, VOS = OV - TA = 125 °C)
loss
IGSS
-
Volts
on characteristics'"
Gate Threshold Voltage
(VOS = VGS, 10 = 1 mAl
VN40AFA
VN67AFA
VNB9AFA
VN40AFA
VN67AFA
VNB9AFA
VN40AFA
VN67AFA
VNB9AFA·
Drain-Source Saturation Voltage
(VGS = 5V, 10 = O.3A)
0.6
VGS(TH)
O.B
O.B
1.2
1.2
1.2
-
-
-
-
Volts
V
-
2.0
1.7
1.9
5.0
3.5
4.5
1
-
-
A
9fs
-
.25
-
mhos
VGS= OV
Ciss
pF
Output Capacitance
VOS = 25V
Coss
C rss
50
pF
f = 1 MHz
-
50
Reverse Transfer Capacitance
-
10
pF
td(on)
-
2
5
ns
-.
-
2
5
ns
Drain-Source Saturation Voltage
(VGS = 10V, 10 = 1.0A)
VOS(ON)
VOS(ON)
On-State Drain Current
(VOS = 25V, VGS = 10V)
Forward Transconductance
(VOS = 24V, 10 = 0.5A, f = 1 KHz)
10(ON)
-
V
dynamic characteristics
Input Capacitance
switching characteristics'"
Turn-on Delay Time
See switching times
waveform below
Rise Time
Tr
Turn-off Delay Time
td(off)
Fall Time
tf
2
5
ns
2
5
ns
·Pulse Test: Pulse width:::; 300 ps, duty cycle:::; 2%
r:
;7
PULSE WIDTH
90%
INPUT
OUTPUT
I
9on-1S:'
50%.
10%
50%
10%
=t-~j
~ff=l
--~10o~:,~I· ...1I
...
Id
90%~
J
TIIt!~1~0%!""'!·¥900/o
SWITCHING TIME TEST WAVEFORMS
332
~D~[F~
VN46AFA
Series
FIELD EFFECT POWER TRANSISTOR
1.2 AMPERES
40-80 VOLTS
ROS(ON} = 3.0, 4.0 n
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operating area with good linear transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
N-CHANNEL
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Applications
•
•
•
•
•
•
Switching power supplies
DC to DC inverters
CMOS and TTL to high current interface
Line drivers
Logic buffers
Pulse amplifiers
0.480-0.520
(12.192-13.208)
0.285-0.315
X 45°
[30.734)
1
0.405-0.425
High speed, high current switching
Current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple DC biaSing
Extended safe operating area
Inherently temperature stable
maximum ratings (TA = 25° C)
CHAMFER~
1.21 REF.
Features
•
•
•
•
•
•
0.065-0.075
[1.651-1.905)
[7.237-8.001)
2
3
(10.287-10.795)
0.095-0.105
I
[2.413-2.667) -l1:f.o--O.095-0.105
(2.413-2.667)
0.026
(0.660)
0.095-0.106
(2.413-2.667)
~
l
W
0.170-0.190
~
[4.318-4.826)
0019-0026
.
.
(0.483-0.660)
(unless otherwise specified)
SYMBOL
Voss
VDGR
VN46AFA
40
40
VN66AFA
60
60
VN88AFA
80
80
UNITS
Volts
Volts
10
1.2
1.2
1.2
A
10M
VGS
Po
3.0
±30
12
96
3.0
±30
12
96
3.0
±30
12
96
A
Volts
Watts
mW/oC
TJ, TSTG
-40 to 150
-40 to 150
-40 to 150
°C
Thermal Resistance, Junction to Ambient
R8JA
10.4
10.4
10.4
°C/W
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
TL
300
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mn
Continuous Drain Current @ TA = 25°C
Peak Drain Current
Gate-Source Voltage
Total Power Dissipation @ TA = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
thermal characteristics
333
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
BVDSS
40
60
BO
loss
-
VGS(TH)
VOS(ON)
·1
MAX
UNIT
-
-
Volts
-
0.01
10
100
10
-
100
O.B
1.7
-
Volts
-
-
3.0
4.0
3.0
4.0
A
9fs
.150
.25
-
mhos
Ciss
-
-
50
pF
-
50
pF
10
pF
2
5
ns
Tr
-
2
5
ns
td(off)
-
2
5
ns
tf
-
2
5
ns
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 10 I1A)
VN46AFA
VN66AFA
VNBBAFA
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS =OV)
(VGS = Max Rating, x O.B, VGS =OV, TA
Gate-Source Leakage Current
(VGS = 10V, VOS =OV)
(VGS = 10V, VOS =OV - TA = 125 DC)
=125DC)
IGSS
-
-
I1A
I1A
on characteristics
Gate Threshold Voltage
(VOS = VGS, 10 = 1 mAl
Drain-Source Saturation Voltage
VN40AFA;VN66AFA
VN88AFA
(VGS = 10V, 10 = 1.0A)
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 1.0A)
Forward Transconductance
(VOS =24V, 10 =0.5A, f = 1 KHz)
ROS(ON)
Ohms
dynamic characteristics
Input Capacitance
=OV
VOS =25V
f = 1 MHz
VGS
Output Capacitance
Reverse Transfer Capacitance
Coss
C rss
switching characteristics
Turn-on Delay Time
Rise Time
td(on)
See switching times
waveform below
Turn-off Delay Time
Fall Time
50%
INPUT
OUTPUT
10%
~.,I:~%~___ tt'~
t_d
SWITCHING TIME TEST WAVEFORMS
334
I'
~D~[?~1f
2N6660,1
FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFETs
utilizes GE's advanced Power DMOS technology to achieve low
on-resistance with excellent device ruggedness and reliability.
N-CHANNEL
~
This design has been optimized to give superior performance in
most switching applications including: switching power supplies,
inverters, converters and solenoid/relay drivers. Also, the extended
safe operating area with good linear transfer characteristics makes
it well suited for many linear applications such as audio amplifiers
and servo motors.
CASE STYLE TO-20SAD (TO-39)
DIME~~~~_~~7:RE IN INCHES AND (MILLIMETERS)
Applications
•
•
•
•
•
•
•
1.2 AMPERES
60,90 VOLTS
ROS(ON) :: 3.0 n
(8.890-9.398)
.----;-,r----o
Switching power supplies
DC to DC inverters
CMOS and TTL to high current interface
Line drivers
Logic buffers
Pulse amplifiers
High frequency linear amplifiers
0.315-0.335
(8.001-8.509)
0.019-0.033
(0.483-0.838)
,1
r- SEATING
-t---==:O:~:n=:n=~i=-L:::=...-1."
PLANE
DRAIN
f-fi---GATE
Features
•
•
•
•
High speed, high current switching
Current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple DC biasing
II Extended safe operating area
• Inherently temperature stable
• Typical ton and toff < 5ns
maximum ratings (TA = 25 0 C)
0.029-0.045
(0.737-1.143)
0.028-0.034
(0.711-0.864)
(unless otherwise specified)
Voss
VOGR
2N6660
60
60
2N6661
90
90
UNITS
Volts
Volts
10
1.2
1.2
A
10M
VGS
Po
3.0
±30
6.25
50
3.0
±30
6.25
50
A
Volts
Watts
mW/oC
TJ. TSTG
-55 to 150
-55 to 150
°C
Thermal Resistance, Junction to Ambient
ROJA
20°C
20xC
°CIW
Maximum Lead Temperature for Soldering
Purposes: 1116" from Case for 10 Seconds
TL
300
300
°C
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS :: 1Mn
Continuous Drain Current @ T A:: 25°C
Peak Drain Current(1)
Gate-Source Voltage
Total Power Dissipation @ T A :: 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
thermal characteristics
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
335
electrical characteristics (TA =25 0 C)
I
(unless otherwise specified)
I SYMBOL
CHARACTERISTIC
MIN
TVP
MAX
UNIT
90
60
90
60
-
-
Volts
-
-
-
loSS
-
-
10
500
fJA
IGSS
-
-
100
500
nA
VGS(TH)
0.8
-
2.0
Volts
VOS(ON)
-
-
1.5
1.6
3.0
4.0
Volts
off characteristics
Drain-Source Breakdown Voltage
(VGS =OV, 10 = 10 pA)
(VGS =OV, 10 = 2.5 MA)
2N6660
2N6661
2N6660
2N6661
Zero Gate Voltage Drain Current
(VOS =Max Rating, VGS =OV)
.
(VOS =Max Rating, x 0.8, VGS =OV, TA
Gate-Source Leakage Current
(VGS = 15V, VOS =OV)
(VGS = 15V, VOS =OV - TA =125°C)
BVDSS
= 125°C)
-
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 1 mAl
Drain-Source Saturation Voltage
(VGS =5V, 10 =0.3A)
Drain-Source Saturation Voltage
(VGS = 10V, 10 = 1.0A)
On-State Drain Current
(VOS =25V, VGS = 10V)
Forward Transconductance
(VOS =24V, 10 =0.5A)
2N6660
2N6661
2N6660
2N6661
VOS(ON)
Volts
10(ON)
1.0
-
-
Amp
gfs
.17
.25
-
mhos
Ciss
-
-
50
pF
40
pF
10
35
pF
pF
td(on)
tr
-
td(off)
tf
-
2
2
2
2
5
5
5
5
ns
ns
ns
ns
dynamic characteristics
=OV, VOS =25V
Input Capacitance
VGS
Output Capacitance
f
Reverse Transfer Capacitance
VOS =OV, VGS
f = 1.0 MHz
= 1 MHz
Coss
C rss
C rss
=OV
-
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
See switching times
waveform below
-
'Pulse Test: Pulse width :5 300 Jls, duty cycle :5 2%
50%
INPUT
OUTPUT
10%
10%
-~~~I~~Jj____td_tt'~
SWITCHING TIME TEST WAVEFORMS
336
r
IGT4D1 O,E~ ~J
mTM1J~~~
10 AMPERES
400, 500 VOLTS
EQUIV. RDS(ON) = 0.27 il
Insulated Gate Bipolar Transistor
This IGT"" Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design
and gate characteristics of the IGT"M Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25°C and 150°C offering extended power handling capability.
N-CHANNEl
c
.~
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:1~g\::~~II~
I .05511.391
.04811.nl
.--.
-+--+---t.265(6.731
.24516.221
I-
CASE
_
r .........,
TEMPERATURE
REFERENCE
/
POINT
-,
The IGT"M Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
.22015.591
~
.00610.151
.00110.0251
TERM.l
TERM.2
Features:
TERM.3
.0331~
• Low VCE(SAT) - 2.5V typ @ 10A
.027
.05511.391
.1
.04511.141--"
• Ultra-fast turn-on -150 ns typical
.10712.721
.08712.211
1I!bf.l0512.671
~~ •.09512.411
1+-"
I+-
.21015.331
.19014.821
..0021511100..533811
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling -10 amps @ 100°C
maximum ratings (TC =25°C)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1Mil
Continuous Drain Current @ T C = 100° C
@Tc= 25°C
Pulsed Collector Current(l)
Gate-Emitter Voltage
Total Power Dissipation @Tc= 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IGT4D10
400
400
10
18
40
±25
75
0.6
IGT4E10
500
500
10
18
40
±25
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
RSJC
1.67
1.67
°C/W
TL
260
260
DC
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited
by max. junction temperature.
337
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVCES
400
500
-
-
Volts
-
-
250
4.,0
JlA
mA
±500
nA
-
2
4.0
2.5
-
5
Volts
-
2.5
2.8
2.9
2.7
Volts
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 250JlA, VGE = OV)
IGT4D10
IGT4E10
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 25°C)
(VCE = Max Rating, x 0.8, VGE = OV, TC = 150°C)1
ICES
,
Gate-Emitter Leakage Current
(VGE = ±20V)
IGES
1 Applies for 3.3°C per watt maximum thermal resistance, case to ambient.
on characteristics*
Gate Threshold Voltage
(VCE = VGE, Ic = 250J..lA)
Tc = 25°C
Tc = 150°C
Collector-Emitter Saturation Voltage
Ic = 10 A, Tc = 25°C, VGE = 15V
IC = 10 A, TC = 150°C, VGE = 15V
IC = 10 A, TC = 25°C, VGE = 10V
VGE(TH)
VCE(SAT)
-
dynamic characteristics
Input Capacitance
VGE = OV
Cies
-
1050
-
pF
Output Capacitance
VCE = 25V
Coes
-
340
-
pF
Reverse Transfer
Capacitance
f = 1 MHz
Cres
-
10
-
pF
-
ns
J..Is
switching characteristics*
(see figures 8 & 9)
Turn-on Delay Time
Resistive Load, Tc = 150°C
td(on)
-
100
Rise Time
Ic = 10A, VCE = Rated VCES
tr
-
150
td(off)
-
0.5
1.0
1.5
p.s
4.5
6.5
p's
tf(eq)
-
3.5
5.0
p's
Ef
-
-
10
12.5
mJ
Turn-off Delay Time
VGE = 15V
Fall Time
RG(on) = 500., RGE = 1000.
Turn':off Delay Time
Inductive Load, Tc = 150°C,
L = 550p.H, Ic = 10A,
Fall Time
VCE(CLAMP) = Rated VCES
Equivalent
Fall Time
VGE = 15V
Turn-off
Switching Losses
RG(on) = 500. RGE = 1000.
tf
td(off)
tf
IGT4D10
IGT4E10
4
ns
~s
'Pulse test: Pulse width :5 300 J..Isec, duty cycle :5 2%. ,
40r-----~----~
__r_,,-----r----_r----_,
25r------,-------,--------r------~----~
VGE =12V
35~----+-----+_~~4-~L-~----~----~
I
TC =25'C
30
~----~----I-J-_+_----Af-- ~:~:~~~ ~~~~EC~~L~H:2~0 " .ec
_-i----I,VGP 10v
iii
y
2S~----+-----~~--~~--~----~----~
~ 20~____+-__~4l~~~~~~====~V~GE~=~9V~
B
IE
~ '5r-----+--+.~~--~~~--~-----r.V~GE~=7.eV~
~
8
10 1-----.,1-
VGE =7V
VGE =6V
4
6
e
m20r------;-------+--~
~
y 15~----~------~--_+_--~~~--+_----~
Ii
~
5
IE 10~----~------~~~~~------+_----~
I
O~0--~~~1------~------~------~4------~
10
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
COLLECTOR-EMITTER SATURATION VOLTAGE. VCE(SAT). VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
338
160
P 140
--....
1.4
I===:....
~
llf
~ 120
!i
100
U~
80
1.2 I-VGE(TH)
~
"~
"'\
I
~
~
e
~
0.8 f--BVCES
z
"' ,
VGE.rt'\
PARAMETER
VGE(TH)
VCE(SAT)
VCE(SAT)
BVCES
0.4
0.2
o
10
BVCES
-.....;;;
VCE(SAT)
@10A_
~
15
CONDITIONS
IC' 250~A
IC' lOA. VGE • 15V
IC' lA. VGE' 15V
IC" MA
-50
-100
20
~
VCE(SAT)
@1AVGE(TH)
0.6
:Ii
II:
0
~E-15V
20
o
--.........
0
~
~
"
rr-
@10A
U
40
o
@1A
VCE(SAT)
1.0
I·
:Ii
~ r--.....
VCE(SAT)
100
50
25' TYPICAL VALUE _
4.0V
2.5V
1.1V
VCESRATING
-
ISO
CASE TEMPERATURE, 'C
DC CDLLECTOR CURRENT, IC, AMPERES
FIGURE 4. TYPICAL TEMPERATURE
DEPENDENCE OF PARAMETERS
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
40
to
"'
II:
"':Ii
0.
30
<
:Ii
$}
'"
z
"'II:II:
:::J
U
INDUCTIVE OR RESISTIVE LOAD
J
20
TJ' 150'C
RGE : 100 OHMS
II:
e
U
~
0
U
'"~
10
IGT4El0
IGT4010
0.
o
o
100
200
-
300
400
500
PEAK COLLECTOR-EMITTER VOLTAGE, VCE, VOLTS
FIGURE 5. TURN-OFF SAFE OPERATING AREA
100
50
......
........:
.......
1'" . . " " '"
...... .......
~
~
~
~ 2.0
u
~ 1.0
.....
r....
"'-.':t-..
I'o. .... ~
...........
...........
r-...
........
r....
10 ~sec
',Ori""
LJ.l
~
.....: ~
SINGLE PULSE
i i j'f
C
0.1
I
2
IGT4010
IGT4El0
III
10
20
50
100
200
:: ,..
I"
100msec
0.1
r-=.
F
...
-
I""Ir
~ 0.04 r--~I!: 0.02
,CIII
0.01
10,5
500
VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
-
f0.4
~ 0.2
10msec
0.2
I
>-
0=0.5
0.2
~1
--
l~ ,..-::~
~
0.02
0.01
ri1ftrE RfCT~1r~l~tR ~ulSf
.,"'
"'I fir10.3
n
10.2
PULSE WIDTH, SECONDS
FIGURE 6. TURN-ON SAFE OPERATING AREA
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
339
L= 550"h
PULSE
GENERATOR
S1 (SWITCH POSITION) -1 CLAMPED INOUCTIVE LOAD
-2 RESISTIVE LOAD
RG10N )=
(RGEN+RS)(RGE)
L·IC1MAXIMUMI
,PULSE WIDTH;:o,60I'sec, VCC=---"''':'':;;:';'';';;~;';;;':'
PULSE WIDTH
RG EN+RS+RG E
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
;¥
V GE
o
IC
J--10%
I
I
----r-I
I
I I
I I
I
I
-l----+---t-
I t,
I
I
~
I
1
Itd1off)1
I
•
"I'
t,
.
1"'
--------.
I
:~
I
I
I
~--90%
0---1'
I
1
o
le'"
V GE
I 1 1
I
I
I
I
"I
I I
VCEICLAMP'I-l---lITlI
I
1 I
I:
VCE
o
1 1t f I
~
I
I
td(off)
INDUCTIVE LOAD
RESISTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
340
I
IGT4D11~E11
mTMlJ~~~~
10 AMPERES
400, 500 VOLTS
EQUIV. ROS(ON} = 0.27 il
Insulated Gate Bipolar Transistor
This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similar to bipolartransistors. The device design
and gate characteristics of the IGT'M Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25° C and 150° C offering extended power handling capability.
N-CHANNEL
c
o~
E
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:~~g\::~;\~
.05511.391
1
.04811.221
-.--.
.26516.731
.245(6.22:
1----I----I------!tE---
/
The IGT'M Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
+
. 1144511133.·65881IDIA.
T
rt
CASE
TEMPE RATURE
REFERENCE
.35519.021
/
POINT
.32518.251-'
.22015.591
1301331
~.
TERM.1
_
;'!1II'.n-~
~51
.00110.0251
.500(12.7IMIN.
TERM.2
TEAM.3
Features:
.0331~.841
.02710.691
• Low VCE(SAT) - 2.5V typ @ 10A
.1hJ--.10512.671
~ •. 09512.411
.0551.39
.1
.0451.141---'
• Ultra-fast turn-on - 100 ns typical
\+---'
\+---
.10712.721
.087(2.21}
.210(5.331
.19014.821
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 10 amps @ 100°C
maximum ratings (TC
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage, VGE =OV
Collector-Gate Voltage, RGE =1Mil
Continuous Drain Current@Tc = 100°C
@Tc= 25°C
Pulsed Collector Current(l)
Gate-Emitter Voltage
Total Power Dissipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
IGT4011
400
400
10
18
40
±25
75
0.6
IGT4E11
500
500
10
18
40
±25
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
. Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
1.67
1.67
°C/W
TL
260
260
°C
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
341
electrical characteristics (T c
I
= 25° C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVCES
400
-
MAX
UNIT
off characteristics
Collector-Emitter Breakdown Voltage .
VGE = OV, Ic. = 2S0pA)
IGT4D11
IGT4E11
-
Volts
-
-
-
-
2S0
4.0
pA
mA
-
-
±SOO
nA
-
2
4.0
2.S
-
S
Volts
VCE(SAT)
-
2.S
2.8
2.9
2.7
Volts
10S0
pF
340
-
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 2S°C)
(VCE = Max Rating, x 0.8, VGE = OV, Tc = 1S0°C)'
ICES
Gate-Emitter Leakage Current
(VGE = ±20V)
1
soo
IGES
Applies for 3.3°C per watt maximum thermal resistance, case to ambient.
on characteristics*
Tc = 2SOC
Tc = 1S0°C
Gate Threshold Voltage
(VCE = VGE, Ic = 2S0/-lA)
VGE(TH)
Collector-Emitter Saturation Voltage
IC = 10A, Tc = 2SoC, VGE = 1SV
IC = 10 A, Tc = 1S0°C, VGE = 1SV
Ic = 10 A, TC = 2SoC, VGE = 10V
-
dynamic characteristics
Input Capacitance
VGE = OV
Cies
Output Capacitance
VCE = 2SV
Coes
-
Reverse Transfer
Capacitance
f = 1 MHz
C res
-
10
-
pF
td(on)
100
td(off)
-
0.4
tf
-
2.5
-
ns
tr
-
td(off)
0.8
1.2
p,s
0.8
1.0
/-Is
tf(eq)
-
0.6
0.8
/-Is
Ef
-
1.3
1.6
1.6
2.0
mJ
switching characteristics*
Turn-on Delay Time
Rise Time
(see figures 8 & 9)
Resistive Load T C = 12So C
IC = 10A, VCE = Rated VCES
Turn-off Delay Time .VGE=1SV
Fall Time
RG(on) = SO~, RGE = 1000.
Turn-off Delay Time
Inductive Load, Tc= 12SoC,
L = 5S0/-lH, Ic = 10A,
Fall Time
VCE(CLAMP) = Rated VCES
Equivalent
Fall Time
VGE = 15V
Turn-off
Switching Losses
pF
RG(on) =500., RGE = 1000.
tf
IGT4D11
IGT4E11
100
ns
/-IS
/-Is
'Pulse test: Pulse width :5 300 ILsec, duty cycle :5 2%.
40r-----.-----~--~~~--~r-----~----,
25r------,-------.------~------~------~
VGE =12V
35r-----+------r~~1+~~~~----+_----~
m
20r------+--~---r---
~
~
§
'5~------r_----~r-~~~~~--~------~
ffi
a:
a:
il
VGE =BV
;
a:
10~----~r_----~~~~~------~------~
8
VGe=6V
o I~___~~~:;~;;;;;t~~;db;~~tV~G~E=~5~V~
VGE=4V
o
4
6
B
10
°0~--~~~,r-----~~----~3------~4------~
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
COLLECTOR·EMITTER SATURATION VOLTAGE. VCE(SAn. VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
342
160
1.4
'-0.... F=:b..
~
1.2 f-VGE(THI
~
""'" ~
"\
1.0
~
~
~
~
" "i'
\.
~
;;I
VCE(SATI
@10A_
VCE(SATI
@lAVGE(THI
:;;
II:
C
Z
"",=lSV
10
~
BVCES
0.6
PARAMETER
VGE(THI
VCE(SATI
VCE(SATI
BVCES
0.4
0.2
o
o
""'" '=:::: ~
~
0.8 f--BVCES
cOJ
VGE=to:'.:..
o
VCE(SATI
@10A
U
-
~ i'-...
VCE(SATI
@lA
-100
20
lS
CONDITIONS
IC = 2SO.A
IC = lOA. VGE = lSV
IC = lA. VGE = 15V
IC=l MA
50
-50
100
2S' TYPICAL VALUE _
4.0V
2.SV
1.1V
VCESRATING
lS0
CASE TEMPERATURE. 'C
DC COLLECTOR CURRENT.IC. AMPERES
FIGURE 4. TYPICAL TEMPERATURE
DEPENDENCE OF PARAMETERS
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
40
OJ
OJ
..
II:
OJ
:;; 30
..:
:E
~
,.:
Z
OJ
II:
II:
INDUCTIVE OR RESISTIVE LOAD
J
20
::J
U
TJ -lS0'C
RGE ~ 100 OHMS
II:
0
I:;
......
0
OJ
U
10
..'"
..:
OJ
IGT4Ell
IGT4D11
o
o
100
200
400
300
SOO
PEAK COLLECTOR-EMITTER VOLTAGE. VCE. VOLTS
FIGURE 5. TURN-OF'F SAFE OPERATING AREA
100
so
......
......
......
i
r--....
I ' ~~
""",,-
I'.,
~
~ 2.0
P
r.....
......
.........
' ....
..........
"'-
I' ......
10 ~sec
liO
jjee
11
I
1.0 I--
0-0.5
I--
0.2
0.4
;;I 0.2
L.U
illOJ
0.1
j!:
!!! 0.04
SINGLE PULSE
0.2
IGT4Dll
IGT4Ell.
,Cirlill
0.1
1
10
20
so
100
200
~
--I
~
100msec
ICIII
-
r4'
!E
10msec
~
F
~
-I='-
~ 0.02
0.01
--
~}
.~~~~:;:
~
II
0.02
0.01
.;';"
r\~ft~E Rrcm1~I~tR ~U~Sf
IIII
II IIIII
II
10.5
500
PULSE WIDTH. SECONDS
VCE. COLLECTOR-EMITTER VOLTAGE. (VOLTS)
FIGURE 6. TURN-ON SAFE OPERATING AREA
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
343
-
L= 550jth
PULSE
GENERATOR
Sl (SWITCH POSITION) -1 CLAMPED INDUCTIVE LOAD
-2 RESISTIVE LOAD
RG(ONI=
(RGEN+RSliRGE)
RGEN+RS+RGE
L·IC(MAXIMUMI
,PULSE WIDTH2!60jtsec, VCC=-::"'::":'~;';";';';~~
PULSE WIDTH
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
VGE
~--90%
1"'--------
0---1'
I
~
o
I:
I I I
I
----t-I
o
I ,
, I
I
I I,
I
II
Id(of!)1 If
•
-90%
IC
I'
-1- --+I -iI
I I
r--r-1
I
10%
I
I I
I
·1· .,
VCEICLAMP',
VCE
o
I
+--lffi-I
I I I
I
I
I
Ilf I
~
I
I
Id(o",
RESISTIVE LOAD
INDUCTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
344
I
Preliminary 26.4 4/85
mTMlJ~~~
IGT6D10,E10
Insulated Gate Bipolar Transistor
10 AMPERES
400, 500 VOLTS
EQUIV. RDS(ON) = 0.27 n
This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS·gate turn onloff power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design
and gate characteristics of the IGT'II Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25° C and 150° C offering extended power handling capability.
N-CHANNEL
c
.~
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845121.47)
M A X ' H .358(9.09) MAX
I:
~~~---t ~'''"''~"
O.043{1.09)
0.038(0.97)
The IGT'II Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
OIA.-I1-
.426110.82) MIN
CASE TEMP.
REFERENCE
POINT
.20(5.00)
Features:
• Low VCE(SAT) - 2.5V typ @ 10A
0.162(4.09)
0.15(3.84)
• Ultra-fast turn-on - 150 ns typical
2 HOLES
• Polysilicon MOS gate - Voltage controlled turn onloff
OIA.
0.440(11.18)
0.420(10.67)
• High current handling -10 amps @ 100°C
maximum ratings (T C = 25° C)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage. RGE = 1Mn
Continuous Drain Current@Tc = 100°C
@Tc= 25°C
Pulsed Collector Current(1)
Gate-Emitter Voltage
Total Power Dissipation @TC=25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
SYMBOL
VCES
VCGR
Ic
IGT6D10
400
400
10
18
IGT6E10
500
500
10
18
UNITS
Volts
Volts
A
A
A
Volts
40
40
±25
75
0.6
±25
75
0.6
TJ. TSTG
-55 to 150
-55 to 150
°C
R8JC
1.67
1.67
°CIW
TL
260
260
°C
ICM
VGE
Po
Watts
W/oC
thermal characteristics
Thermal Resistance. Junction to Case
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
..
(1) Repetitive Ratmg: Pulse Width limited by max. junction temperature .
345
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVCES
400
500
-
-
-
-
250
4.0
J.lA
mA
-
-
±500
nA
2
4.0
2.5
-
5
Volts
-
2.5
2.8
2.9
2.7
Volts
1050
pF
340
-
MAX
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 250J.lA, VGE = OV)
IGT6D10
IGT6E10
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 25°C)
(VCE = Max Rating, x 0.8, VGE = OV, Tc = 150°C)1
ICES
Gate-Emitter Leakage Current
(VGE = ±20V)
IGES
Volts
1 Applies for 3.3°C per watt maximum thermal resistance, case to ambient.
on characteristics*
Gate Threshold Voltage
(VCE = VGE, IC = 250JotA)
Tc= 25°C
Tc = 150°C
VGE(TH)
Collector-Emitter Saturation Voltage
Ic = 10 A, Tc = 25°C, VGE = 15V
Ic = 10 A, TC = 150°C, VGE = 15V
Ic = 10 A, TC = 25°C, VGE = 10V
VCE(SAT)
-
-
dynamic characteristics
Input Capacitance
VGE = OV
Cies
Output Capacitance
VCE = 25V
Coes
-
Reverse Transfer
Capacitance
f = 1 MHz
C res
-
10
-
pF
Resistive Load, Tc = 150°C
td(on)
-
100
-
ns
tr
-
150
0.5
-
JotS
tf
-
tdoff
-
1.0
1.5
JotS
4.5
6.5
JotS
tf(eq)
-
3.5
5.0
JotS
Ef
-
-
10
12.5
mJ
switching characteristics*
Turn-on Delay Time
pF
(see figures 8 & 9)
Rise Time
Ic = 10A, VCE = Rated VCES
Turn-off Delay Time
VGE = 15V
Fall Time
RG(on) = 50.0., RGE = 100.0.
Turn-off Delay Time
Inductive Load, TC = 150°C,
L = 550JotH, Ie:; = 10A,
Fall Time
VCE(CLAMP) = Rated VCES
Equivalent
Fall Time
VGE = 15V
Tum-off
Switching Losses
RG(on) = 50.0., RGE = 100.0.
td(off)
tf
IGT6D10
IGT6E10
4
ns
JotS
.*Pulse test: Pulse width ::5 300 ~sec, duty cycle ::5 2%.
4D~----~----~--~~~--~~----~----~
25~----~,------,------~------~-------,
35r-----+------r~~~~~~r-----+_----~
~
i
2D~----~~----~----
~ 15~----~r-----~--~~-;~~--~------~
~
II:
a
II:
~8
1D~----~~----~~~~~------~------~
D~D--~~~------~------~------~----~
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
COLLECTOR·EMITTER SATURATION VOLTAGE. VCE(SAT). VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
346
160
1.4
~ F==:t..
~
~......
1.2 r-VGE(TH)
~
~
"-
f==::::: r--.-
~
BVCES
VCE(SAT)
@10A_
VCE(SAT)
@IAVGE(TH)
O.S
",,/E=15V
PARAMETER
0.4
"l'
VGE=rC\
10
.......;;
~
0.8 ~BVCES
'""
o
VCE(SAT)
@10A
"\
o
@IA
1.0
-
~ I'.....
VCE(SAT)
0.2
o
15
-50
-100
20
CONDITIONS
IC = 2S0"A
IC = IDA, VGE = ISV
IC = lA, VGE = ISV
IC=1 MA
VGE(TH)
VCE(SAT)
VCEISAT)
BVCES
50
25' TYPICAL VALUE _
4.0V
2.SV
1.IV
VCESRATING
100
-
150
CASE TEMPERATURE, 'C
DC COLLECTOR CURRENT,IC, AMPERES
FIGURE 4. TYPICAL TEMPERATURE
DEPENDENCE OF PARAMETERS
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
40
III
:i~
30
~
~
INDUCTIVE OR RESISTIVE LOAD
II:
§
..I
20
TJ = 150'C
RGE ~ 100 OHMS
u
II:
~
o
10
U
~
IGTSE10
IGTSD10
o
o
100
200
t-----
300
400
500
PEAK COLLECTOR-EMITTER VOLTAGE. VCE. VOLTS
FIGURE 5. TURN-OFF SAFE OPERATING AREA
100
50
"
0
"'-
"'" ~'" "- "-
I"- ~
~
~ 2.0
10 psec
.......
"-
.........
r"-i'
~
TC
0.1
1
i j'f III
2
10
I"-
~
SINGLE PULSE
0.2
I'.
i"..
20
50
100
lrOIi""
" L~
"
!:'
:j
1.0 10- f-
~
t--
~ 0.4
l!l
~
ffi
~-
0.2
~..m
~
~~~
0.1
i!:
10msec
!i;
100m.eo
I!:
lil 0.04
IGT6Dl0
IGTSE10
C ~ lei II
200
500
~
0.02
~
0:
Irl
II
<; R~C
mft
II
RU •
10-3
10.2
PULSE WIDTH. SECONDS
VCE. COLLECTOR-EMITTER VOLTAGE. (VOLTS)
FIGURE 6. TURN-ON SAFE OPERATING AREA
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
347
L= 550llh
PULSE
GENERATOR
Sl (SWITCH POSITION) -1 CLAMPED INDUCTIVE LOAD
-2 RESISTIVE LOAD
RG(ON)=
L·I C (MAX IMUM)
PULSE WIDTH
(RGEN+RSHRGE)
RGEN+RS+RGE ,PULSE WIDTH?:60Ilsec, VCC
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
V. .
;r-----'K.:''''
I
0-f--10%
I
IC
II
o
----t--
I
I
I
I t,
I
I I
\
....- - - - -
I
_1 ____
r--r--I
v"
--
I
I
I
I
td (ofll
•
l
,I,
I .
~I
90%
I I
IC
0
I
I
tf
1'----
oJ
90%
+-_-1._
II
~--OO.
I
'I
VCE
td(on)
I I
10%
I I I
I I I
VCEICLAMP) +--I~I
I I I
I
I
o
I I tf I
~
I
I
td(off)
INDUCTIVE LOAD
RESISTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
348
I
IGT6D11,E11
mTMlJ~~~
10 AMPERES
400, 500 VOLTS
EQUIV. ROS(ON) =0.27 il
Insulated Gate Bipolar Transistor
This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design
and gate characteristics of the IGT'II Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25°C and 150°C offering extended power handling capability.
N-CHANNEL
c
.~
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0845(2147J
I'-- MAX ~~.35819.09) MAX
06~~lX65l~
T
a 043( 1 09)
The IGT'II Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
co ntactors.
~
OIA ---'
I
0038(097)
I-
SEATING PLANE
426/10 82, MIN
CASE TEMP
REFERENCE
POINT
20(5001
Features:
• Low VCE(SAT) - 2.5V typ @ 10A
0.162(4 09/
• Ultra-fast turn-on -100 ns typical
DIA
015(3841
2 HOLES
• Polysilicon MOS gate - Voltage controlled turn on/off
0440(11 IBI
o 420{1067j
• High current handling - 10 amps @ 100°C
maximum ratings (T C =25° C)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1Mil
Continuous Drain Current@Tc = 100°C
@Tc= 25°C
Pulsed Collector Current(1)
Gate-Emitter Voltage
Total Power DiSSipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IGT6011
400
400
10
18
40
±25
75
0.6
IGT6E11
500
500
10
18
40
±25
75
0.6
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ROJC
1.67
1.67
°C/W
TL
260
260
°C
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
349
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVCES
400
SOO
-
-
Volts
-
-
-
2S0
4.0
pA
mA
-
-
±SOO
nA
2
4.0
2.S
S
Volts
-
-
2.S
2.7
2.B
-
2.9
-
10S0
-
pF
340
-
pF
off characteristics
Collector-Emitter Breakdown Voltage
(VGE = OV, Ic = 2S0J.LA)
IGT6D11
IGT6E11
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 2S°C)
(VCE = Max Rating, x O.B, VGE = OV, Tc = 1S0°C)(2)
ICES
Gate-Emitter Leakage Current
(VGE = ±20V)
IGES
(2) Applies for 3.3°C per watt maximum thermal resistance, case to ambient.
on characteristics(3)
Tc= 2SOC
TC = 1S0°C
Gate Threshold Voltage
(VCE = VGE, IC = 2S0J.LA)
Collector-Emitter saturation Voltage
Ic = 10 A, Tc = 2SoC, VGE = 1SV
Ic = 10 A, Tc = 1S0°C, VGE = 1SV
Ic = 10 A, Tc = 2SoC, VGE = 10V
VGE(TH)
-
VCE(SAT)
Volts
dynamic characteristics
Input Capacitance
VGE = OV
Cies
Output Capacitance
VCE = 2SV
Coes
-
Reverse Transfer
Capacitance
f = 1 MHz
C res
-
10
-
pF
td(on)
-
100
100
tf
-
2.S
-
ns
tr
td(off)
-
O.B
1.2
J.LS
tf
-
O.B
1.0
J.Ls
tf(eq)
-
0.6
O.B
J.LS
Ef
-
1.3
1.6
1.6
2.0
mJ
switching characteristics(3)
(see figures 8 & 9)
Turn-on Delay Time
Resistive Load, T C= 12So C
Rise Time
IC = 10A, VCE = Rated VCES
Turn-off Delay Time
VGE = 1SV
Fall Time
RG(on) = son, RGE = 100n
Turn-off Delay Time
Inductive Load, Tc = 12SoC,
L = SSOJ.LH, Ic = 10A,
Fall Time
VCE(CLAMP) = Rated VCES
Equivalent
Fall Time
VGE = 1SV
Turn-off
Switching Losses
RG(on) = SOn,RGE = 100n
td(off)
IGT6D11
IGT6E11
0.4
ns
J.LS
J.Ls
(3) Pulse test: Pulse widths :5 300 ILsec, duty cycle :5 2%.
40r-----,-----~_=~_.~----r-----._----.
25r-----~r------.r------,-------,------_,
35r-----~----_r~~T+--,£--~----+_----~
VGE=7V
VGE = BV
°OL--~~~------~------~------~----~
10
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
COLLECTOR·EMITTER SATURATION VOLTAGE, VCE(SAT). VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
3S0
leo
!l
140
1.4
"'-0... r:=::::....
~
iii
a:
j:!
120
im
3
1.2 r-VGE(TH)
~
"'" ~
100
51
i
0.8
''""
10
~
~/E=15V
PARAMETER
0.4
"- 1'-
/\
20
""""
~
t-- BVCES
~r---..
BVCES
VCE(SAT)
@l0A_
VCE(SAT)
@lAVGE(TH)
0.6
VGP l0V
o
VCE(SAT)
@10A
40
o
@1A
1.0
"'"~
~
80
I·
II
~ r-....
VCE(SAT)
0.2
o
15
IC=1 MA
50
-50
-100
20
CONDITIONS
IC =250_A
IC =lOA, VGE = 15V
IC =lA, VGE =15V
VGE(TH)
VCE(SAT)
VCE(SAT)
BVCES
100
CASE TEMPERATURE,
DC COLLECTOR CURRENT,IC, AMPERES
25' TYPICAL VALUE _
4.0V
2.5V
1.W
VCESRATING
-
150
'c
FIGURE 4. TYPICAL TEMPERATURE
DEPENDENCE OF PARAMETERS
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
40
!3II:
W
0.
:; 30
«
:Ii
!:}
...
Z
W
II:
II:
::>
INDUCTIVE OR RESISTIVE LOAD
J
20
TJ = l50'C
RGE ~ 100 OHMS
u
II:
0
t;
w
...0...
U
10
'"Ul
IGT6E11
IGT6D11
0.
o
o
100
200
300
r--400
500
PEAK COLLECTOR-EMITTER VOLTAGE, VCE, VOLTS
FIGURE 5. TURN-OFF SAFE OPERATING AREA
100
50
......
I""
......:
~
I'..
"'",,,,
"'"
t-...
l'
'"
~
10 ~sec
',Orr
f""-,.,
f'o..
" "'"
1'1''''
r-....
r-..
-.....:
SINGLE PULSE
r i j'f
C
0.1
1
2
I"
10
20
50
100
2.0
?
1.0
rJ
~W
r-=
... 0.2
~
ffi
l00msec
IGT6D11
IGT6El1
~ "'~" ,CIII
200
500
~ I-
I-
0.4
0.
2l
L.U
10msec
0.2
ffi
0.
=
-
0.1
i!:
!z!!! 0.04
.,
:i
i!: 0.02
~
r-
,.....
0-0.5
0.2
~lj
Hl -
-
L~~-.tt·
.. ~
-..
~
0.02
0.01
I--t-I<- rf\~ft~E Rn~~1~ITtR PIU~Sr
0.01
10"
11111
10-4
11111111
10.3
II
10-2
VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
PULSE WIDTH, SECONDS
FIGURE 6. TURN-ON SAFE OPERATING AREA
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
351
L= 550"h
PULSE
GENERATOR
SI (SWITCH POSITION) -1 CLAMPED INDUCTIVE LOAD
-2 RESISTIVE LOAD
RGION )=
(RGEN+RS)(RGE)
RGEN+RS+RGE ,PULSE WIDTH2!:60I'sec, Vcc
L·ICIMAXIMUM)
PULSE WIDTH
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
v'Jo
I
--10%
o
I
I I
I I
VGE
I
I
I
I
I
-I-----I--i-
Iltrl
~
I
1"'-------.
1
:~
I
----t-I
~--90%
o~
I
I
I
I
1C~
I I I
I
I
I
IldlOlflllfl
-
-I-
-I
I
1
VCEICLAMP'I-I--IVllI
I
VCE
I I
I:
I I I
o
If
~
I
I
t dlofl )
INDUCTIVE LOAD
RESISTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
352
I
IGT6D20,E20
mTMIT~~~
20 AMPERES
400, 500 VOLTS
EQUIV. RDS(ON) = 0.12 n
insulated Gate Bipolar Transistor
This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design
and gate characteristics of the IGT'M Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25° C and 150° C offering extended power handling capability.
N-CHANNEL
c
.~
a
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.645(21.471
MAX·
0~~X65l~
t~
0.043(1.09)
0.03810.971
The IGT'M Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
DIA.---.I!--,
·35B(9.D9l MAX
SEATING PLANE
.426110.82) MIN.
CASE TEMP.
REFERENCE
POINT
.20(5.00)
Features:
• Low VCE(SAT) - 2.3V typ @ 20A
0.162(4.091
0.15(3.841
2 HOLES
" Ultra-fast turn-on - 200 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
e High current handling -
DIA.
0.440(11.18)
0.420(10.671
20 amps @ 100°C
maximum ratings (TC = 25°C)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1Mn
Continuous Drain Current@Te = 100°C
@Te= 25°C
Pulsed Collector Current(l)
Gate-Emitter Voltage
Total Power Dissipation @ Te = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IGT6D20
400
400
20
32
80
±25
125
1.0
IGT6E20
500
500
20
32
80
±25
125
1.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
R8JC
1.0
1.0
°C/W
h
260
260
°C
SYMBOL
VCES
VeGR
Ic
ICM
VGE
Po
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
353
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVCES
400
500
-
-
Volts
-
-
250
4.0
f.lA
mA
-
±500.
nA
5
Volts
Volts
off characteristics
Collector-Emitter Breakdown Voltage
IGT6D20
IGT6E20
(VGE =OV, Ic =250~A)
Collector Cut-off Current
(VCE =Max Rating, VGE =OV, Tc =25°C)
(VCE =Max Rating, x 0.8, VGE =OV, Tc =125O C)(2)
Gate-Emitter Leakage Current
(VGE =±20V)
ICES
IGES
(2) Applies for 4°C per watt maximum thermal resistance, case to ambient.
on characteristics(3i
Gate Threshold Voltage
(VCE =VGE, Ic = 500~A)
Tc= 25°C
Tc = 150°C
Collector-Emitter Saturation Voltage
Ic = 20 A, TC =25°C, VGE = 15V
Ic =20 A, Tc = 150°C, VGE =15V
Ic =20 A, Tc =25°C, VGE = 10V
-
2
4
2
VCE(SAT)
-
2.3
2.4
2.8
2.4
2300
pF
700
-
10
-
pF
100
-
ns
VGE(TH)
-
dynamic characteristics
Input Capacitance
VGE = OV
Cies
Output Capacitance
VCE = 25V
Coes
-
Reverse Transfer
Capacitance
f = 1 MHz
C res
-
td(on)
-
pF
switching characteristics(3) (see figures 8 & 9)
Turn-on Delay Time
Resistive Load, Tc = 150°C
Rise Time
IC = 20A, VCE = Rated VCES
Turn-off Delay Time
VGE
Fall Time
RG(on) = 50n, RGE = 100n
Turn-off Delay Time
Inductive Load, Tc = 150°C,
L =550~H, Ic = 20A,
Fall Time
VCE(CLAMP)
Equivalent
Fall Time
VGE
=15V
td(off)
tf
IGT6D20
IGT6E20
ns
5.0
-
1.0
1.5
~s
0.65
~s
J.LS
4.5
6.5
~s
tf(eq)
3.5
5.0
J.Ls
Ef
-
14
17.5
20
25
mJ
tf
=15V
-
-
td(off)
=Rated VCES
Turn-off
RG(on) = 50n, RGE = 100n
Switching Losses
(3) Pulse test: Pulse widths::; 300 J.lsec, duty cycle::; 2%.
60r-----.------r__
tr
200
-r-.~----r-----._----.
50~----~~----~------~-------'-------'
ro~----+_----~~~~--~--~----+-----~
Iii 4O.1------II------II-~-7--=-j--=j;..=....--7=-=t------__i
I
~
g
~~-----II------II-+---~~----~------~
,.:
iii
~
tl~
VGE=7V
10~____~~=--b~
__~~====F=====~VG~E~=6~V~
;
o
u
20~----~------~~~~~-------+------~
10~----~~~~~-------1-------+------~
VGP 15V
MAXIMUM PULSE WIDTH 300 .sec
MAXIMUM DUTY CYCLE = 2%
=
O~--~~~----~------~------~------~
o
1
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
COLLECTOR-EMITTER SATURATION VOLTAGE. VCE(SAT). VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
354
5.
160
1.4
~
~ 140
S
.......
~
~120
~
1.2 -VGE(TH)
~
i
~ 100
B eo
~
60
~
C
40
2
~
u
~
'"
~
0.6 -BVCES
~
<>
.
.....
~
20
-r
...............
BVCES
VCE(SAT)
@20A_
VCE(SAT)
@2AVGE(TH)
0.6
0
z
PARAMETER
0.4
~
0.2
-so
·100
40
~
50
DC COLLECTOR CURRENT. IC. AMPERES
25" TYPICAL VALUE _
4.0V
2.3V
1.1V
VCESRATING
CONDITIONS
IC·5OOpA
IC· 20A. VGE· 15V
IC· 2A. VGE. 15V
IC· 1 MA
VGE(TH)
VCE(SAT)
VCE(SAT)
BVCES
o
W
-......
-.-:::::::::::::
r.:::::::- ~
::e
0:
"","VGE. 15V
VGf;ov\
o
VCE(SAT)
@20A
20
o
@2A
1.0
"~'\
m
!Ii!
~ ..........
VCE(SAT)
-
150
100
CASE TEMPERATURE. "C
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
FIGURE 4. TYPICAL TEMPERATURE
DEPENDENCE OF PARAMETERS
60
.,..
.....::e
50
0:
~
!i
INDUCTIVE OR RESISTIVE LOAD
I
I
TJ= 150°C
RGE· 100 OHMS
40
.
0:
0:
=>
~
U
0:
........~
20
0
IGT6E20
IGT6D20-
u
"~
10
o
o
~
200
100
PEAK
COLLECTO~·EMITTER
400
500
600
VOLTAGE. VCE. VOLTS
FIGURE 5. TURN-OFF SAFE OPERATING AREA
100
50
i:
~
..........
r-...
5
§
"
"
r-...
......
u
~
"
'"I'-..'" ~
~
i
..........
::
1.0
8y
0.5
0.2
~
:--..
10 IJsec
100 p'sec
11
1.0
T'il
I..!Ii
0.4
r" lb~,!c
~
_ll°'1'OC
IGT6E20IGT6D20-
TriS'11
0.1
1
5
10
20
50
100
200
~
f-
~
0.2
~
0.1
us~
0.04
~
0.02
~
DC.
I-- I-- SIN~LE"PULSE
2.0
P
JJ
....
r-
11lllll IIIIIII
0.01
500
10-5
VCE. COLLECTOR·EMITTER VOLTAGE. (VOLTS)
"' .~ pULSE
~IN'~L
10'4
10-3
10-2
PULSE WIDTH. SECONDS
FIGURE 6. TURN-ON SAFE OPERATING AREA
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
355
L= 550"h
PULSE
GENERATOR
S1 (SW)TCH POSITION) -1 CLAMPED INDUCTIVE LOAD
-2 RESISTIVE LOAD
RG(ONI=
(RGEN+RsHRGE)
RGEN+RS+RGE
L·l c (MAXIMUM I
,PULSE WIDTH<':60"sec, VCC=-:::~==~
PULSE WIDTH
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
r
VGE
o
VGrtl--SO%
.
J--10%
1
o
.
I
Ic
o
I
I
I
I I
I I
I
\
1
I
I
-I----+-i-
I t,
I
I
r-r--t
I..
I
I
td (0111
"\.
t,
I
I
:~
+-lYTl
I
----r-I
I
I I I
I
I I I
II
"I
I
VCE(CLAMP')
VCE
I I
I:
o
\
\ t, I
I
I
\.-.1.,:.1
td(olt)
RESISTIVE LOAD
INDUCTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
356
I
mTMlJ~~~
IGT6D21,E21
Insulated Gate Bipolar Transistor
20 AMPERES
400, 500 VOLTS
EQUIV. ROS(ON) = 0.145 0
This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design
and gate characteristics ofthe IGT'- Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25°Cand 150°Cofferingextended power handling capability.
N-CHANNEl
c
o~
E
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
0845121.471
MAX
:l~'35B(9'09) MAX
0~~lx65l~
--u--n=
T
004311091
The IGT'- Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
DIA
--.I\-
SEATING PLANE
426[1082, MIN
I
0038(097)
CASE TEMP
REFERENCE
Features:
POINT
.20(5.001
• Low VCE(SAT) - 2.5Vtyp@20A
EMInER
• Ultra-fast turn-on -150 ns typical
0.16214.09,
0.15(3.B41
2 HOLES
• Polysilicon MOS gate - Voltage controlled turn on/off
DIA
o 440{1 1 18)
0420(10671
• High current handling - 20 amps @ 900 C
maximum ratings (TC = 25° C)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1MO
Continuous Drain Current@Tc = gooC
@Tc=25°C
Pulsed Collector Current(1)
Gate-Emitter Voltage
Total Power DIsSipation @ T C = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IGT6021
400
400
20
32
80
±25
125
1.0
IGT6E21
500
500
20
32
80
±25
125
1.0
UNITS
Volts
Volts
A
A
A
Volts
Watts
TJ, TSTG
-55 to 150
-55 to 150
°C
R9JC
1.0
1.0
°CIW
TL
260
260
DC
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
WloC
therrmal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
357
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
BVCES
400
500
-
-
Volts
-
-
250
4.0
IJA
mA
±500
nA
2
4
2
-
5
Volts
-
2.5
2.6
3.0
2.9
Volts
2300
pF
700
-
off characteristics
Collector-Emitter Breakdown Voltage
(VGE = OV, Ic = 250~A)
IGT6D21
IGT6E21
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 25°C)
(VCE = Max Rating, x 0.8, VGE = OV, Tc = 125O C)(2)
Gate-Emitter Leakage Current
(VGE = ±20V)
ICES
-
IGES
(2) Applies for 4°C per watt maximum thermal resistance, case to ambient.
on characteristics(3)
Gate Threshold Voltage
(VCE = VGE, Ic = 500~A)
Tc= 25°C
Tc = 150°C
Collector-Emitter Saturation Voltage
Ic = 20 A, Tc = 25°C, VGE = 15V
Ic = 20 A, Tc = 150°C, VGE = 15V
Ic = 20 A, Tc = 25°C, VGE = 10V
VGE(TH)
-
VCE(SAT)
-
-
dynamic characteristics
Input Capacitance
VGE = OV
Cies
Output Capacitance
VCE = 25V
Coes
-
Reverse Transfer
Capacitance
f = 1 MHz
C res
-
10
-
pF
td(on)
100
td(off)
-
0.60
tf
3.0
~s
0.8
1.4
~s
0.8
1.0
~s
tf(eq)
-
-
ns
tr
-
0.6
0.8
~s
Ef
-
2.6
3.2
3.2
4.0
mJ
pF
switching characteristics(3) (see figures 8 & 9)
Turn-on Delay Time
Resistive Load Tc:; 125°C
Rise Time
Ic = 20A, VCE = Rated VCES
Turn-off Delay Time
VGE =15V
Fall Time
RG(on) = 50n, RGE = 100n
Turn-off Delay Time
Inductive Load,TC= 125°C,
L = 550~H, IC = 20A,
Fall Time
VCE(CLAMP) = Rated VCES
Equivalent
Fall Time
VGE = 15V
Turn-off
Switching Losses
RG(on) = 50n, RGE = 100n
td(off)
tf
IGT6D21
IGT6E21
150
ns
~s
(3) Pulse test: Pulse widths :5 300 ILsec, duty cycle :5 2%.
60~----'------.---r~'-----.-----'-----'
50.----------,,-------,---------,--------,.----,
70~----+-----~~~f+~~--~----+-----~
IE 401-------1f--------f---
i
y 301-------1f--------f--~~~~~-_+---~
~
i
a
20
10 I--------l--~.......~-------
°O~-~~~---~---~---~--~
COLLECTOR TO EMITTER VOLTAGE, VCE. VOLTS
COLLECTOR·EMITTER SATURATION VOLTAGE. VCE(SAT). VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
358
1.4
IS0
O~ 100..
~~
0
1.2 t-VGE(TH)
~~
0
@2A
1.0
VCE(SAT)
u
~
.~ ~
~"\
VrE=~V
o
~
c
@20A
0.8 I---BVCES
:i
-......;;;:
~r----
BVCES
VCE(SAT)
@20A-
~
VCE(SAT)
@2AVGE(TH)
0.6
~
o
z
" ' " VGI/15V
\
~
PARAMETER
0.4
0.2
20
30
IC = 500pA
IC = 20A. VGE = 15V
IC = 2A. VGE = 15V
IC=1 MA
-50
CASE TEMPERATURE.
DC COLLECTOR CURRENT. 'C. AMPERES
I.TV
VCES RATING
100
50
40
25' TYPICAL VALUE _
4.0V
2.5V
CONDITIONS
VGE(TH)
VCE(SAT)
VCE(SAT)
BVCES
-100
10
V-
--::::
W
N
a
o
~ I"---...
VCE(SAT)
150
'c
FIGURE 4. TYPICAL TEMPERATURE
DEPENDENCE OF PARAMETERS
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
0
fa
50
~
~
:i
Y
IN?UCTIVf OR RESISTIVE LOAD
TJ = 150'C
RGE = 100 OHMS
40
!i
I:!
~
30
~~
20
u
8
~..
IGTSE21
IGTSD2110
a
o
100
200
300
400
500
600
PEAK COLLECTOR-EMITTER VOLTAGE. VCE. VOLTS
FIGURE 5. TURN-OFF SAFE OPERATING AREA
100
50
......
"-.
.......
f'
........
"-
~~
" "~
i'...
l'-...
1',
i'o
10 ~sec
100 J.lsec
I"'-....
I'...
~
rl"l
,~Jslc
~
!:'
ui
1.0
~
0.4
~
l!!
~
LI.I
0.1
ffiUi
0.04
~
0.02
z
0.2
I-- I-- SIN~LE'pULSE
DC.
:~~:~~;+::I-
Trrlll
0.1
1
10
20
50
100
200
I
.."
0.2
II:
i!:
',00'l15eC
2.0
1--1-
SINGLE RECTANGULAR PULSE
11111111
0.01
TO-5
500
VCE. COLLECTOR-EMITTER VOLTAGE. (VOLTS)
10-3
10-2
11111111
TO-1
PULSE WIDTH. SECONDS
FIGURE 6. TURN-ON SAFE OPERATING AREA
359
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
-
L= 550l'h
PULSE
GENERATOR
S1 (SWITCH POSITION) -1 CLAMPED INDUCTIVE LOAD
-2 RESISTIVE LOAD
(RGEN+RS)(RGE)
RGIONt
L·ICIMAXIMUM)
• PULSE WIDTH2!60I'sec, V CC =--::::7:-'::=::-=::::7"PULSE WIDTH
RG EN+RS+RG E
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
r-
VGE
o
J--10%
I
o
I
I
I
I
_9_0%
___
I
I
Ic
--1\=.
I
:~
----1-I
I
I
-:----+-iI I
I
I I
I
I
I
I t,
I
H"1
':rL
,
Itdloff)1
•
"I,
If
I I I
,
I
I I ,
"I
VCEICLAMP")
VCE
+-IYTl'
I I I
I:
o
I Ilf
'
I
)
~
I
t dlolt )
RESISTIVE LOAD
INDUCTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
360
mTMlJ~~~
IGT8D20,E20
Insulated Gate Bipolar Transistor
20 AMPERES
400, 500 VOLTS
EQUIV. ROS(ON) = 0.12 n
This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design
and gate characteristics of the IGT'M Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25° C and 150° C offering extended power handling capability.
N-CHANNEL
c
.~
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
The IGT'M Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Features:
• Low VCE(SAT) - 2.3V typ @ 20A
• Ultra-fast turn-on - 200 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 20 amps @ 100°C
maximum ratings (TC = 25° C)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1Mn
Continuous Drain Current@Tc= 100°C
@Tc= 25°C
Pulsed Collector Current(1)
Gate-Emitter Voltage
Total Power Dissipation @Tc = 25°C
Derate Above 25° C
Operating and Storage
Junctiol} Temperature Range
(unless otherwise specified)
IGT8020
400
400
20
32
IGT8E20
500
500
80
80
±25
125
1.0
±25
125
1.0
W/oC
TJ, TSTG
-55 to 150
-55 to 150
°C
ReJC
1.0
1.0
°CIW
TL
260
260
°C
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
20
32
UNITS
Volts
Volts
A
A
A
Volts
Watts
thermal characteristics
Thermal ReSistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
361
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
BVCES
400
500
-
-
-
250
4.0
J.lA
mA
-
±500
nA
-
2
4
2
-
5
Volts
VCE(SAT)
-
2.3
2.4
2.8
2.4
Volts
Cies
2300
700
-
pF
Coes
-
C res
-
10
-
pF
td(on)
-
100
-
200
td(off)
-
0.65
tf
-
5.0
-
ns
tr
td(off)
-
1.0
1.5
~s
4.5
6.5
~s
tf(eq)
-
3.5
5.0
~s
Ef
-
14
.17.5
20
25
mJ
MAX
I.
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(VGE =OV, Ic =250J.lA)
IGT8D20
IGT8E20
Collector Cut-off Current
(VCE =Max Rating, VGE =OV, Tc =25°C)
(VCE =Max Rating, x 0.8, VGE =OV, Tc =150°C)(2)
ICES
Gate-Emitter Leakage Current
(VGE =±20V)
IGES
-
Volts
-
(2) Applies for 4°C per watt maximum thermal reSistance, case to ambient.
on characteristics(3)
Tc = 25°C
Tc = 150°C
Gate Threshold Voltage
(VCE =VGE, Ic =500~A)
Collector-Emitter Saturation Voltage
Ic =20 A, Tc =25°C, VGE =15V
Ic =20 A, TC =150°C, VGE =15V
Ic =20 A, Tc =25°C, VGE = 10V
VGE(TH)
dynamic characteristics
Input Capacitance
VGE =OV
Output Capacitance VCE =25V
Reverse Transfer
Capacitance
f
=1 MHz
switching characteristics(3)
=150°C
=20A, VCE =Rated VCES
Resistive Load, Tc
Rise Time
IC
Turn-off Delay Time
VGE =15V
Fall Time
=50n, RGE =100n
Inductive Load, Tc =150°C,
L =550~H, Ic =20A,
VCE(CLAMP) =Rated VCES
VGE =15V
IGT8D20
RG(on) =50n,RGE =100n
RG(on)
Fall Time
Equivalent
Fall Time
pF
(see figures 8 & 9)
Turn-on Delay Time
Turn-off Delay Time
-
Turn-off
Switching Losses
(3) Pulse test: Pulse widths:::; 300 ~sec, duty cycle:::; 2%.
tf
IGT8E20
80.-----.------r--~-.,-----r-----._----,
ns
p.s
~s
50,------,,------,-------,-------,-------,
VGe =12V
70~----+_----~~~++--~~~----+_----~
TC =25·C
~ 60 t------i------l-"..-,,,..-,+t-- ~~~:~~~ :;~~~eC~~~:= =2~0" sec
en
1I
9
VGe =10v
50~----+_----~~~_7~~--~----+_----~
~ 40~----+_---J~~~~~~==~====tv~G~e~=9~v~
a
t
0:
30r-----~~~fY~--~~=---~----~VG~e-.=8~v~
~
8 20 ~----+-,
10
o
VGe=7V
1-____-J~~--b-~__~~===F====~~VG~e~=6~V~
~ 401------l1------l1-~_r.=.....f._,~_7,-------f
I
9
~
~
130:
201------l------~~~~~-------+------~
~U
10~----~--~~~------~------~------~
o
VGE =15V
MAXIMUM PULse WIDTH
VGe =4V
L__~~~~~~;;;;~~~~~~~~VG~e~=5~V~
10
o
4
30~----~~----~~+_--~~----~------~
oL-__
o
6
~~
______
~
______
~
=300 "sec
MAXIMUM DUTY CYCLE =2%
______
______
~
1
COLLECTOR TO EMITTER VOLTAGE, VCE, VOLTS
COLLECTOR·EMITTER SATURATION VOLTAGE, VCE(SAT), VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
362
~
160
1.4
~ ,....,
~
~
1.2 f-VGE(THI
~
'\
1.0
~
~
:;!
~
"\
::&
a:
0
Z
,"VGE=15V
"
VGErOV\
w
o
VCE(SAT)
@ooA
O.S f--BVCES
-......;;;
lr"
~~
~
0
"
o
@2A
0
---
-............ r.........
VCE(SAT,
@20A-
VCE(SAT)
@2AVGE(TH)
0.6
PARAMETER
0.4
o
-100
50
-50
40
25· TYPICAL VALUE _
CONDITIONS
4.0V
IC = 500pA
IC = ooA, VGE = 15V
IC = 2A, VGE = 15V
IC= 1 MA
VGE(TH)
VCE(SAT)
VCE(SAT)
BVCES
0.2
~
00
BVCES
VCE(SAT)
2.3V
I.W
VCESRATING
100
150
CASE TEMPERATURE, ·C
DC COLLECTOR CURRENT, IC, AMPERES
FIGURE 4. TYPICAL TEMPERATURE
DEPENDENCE OF PARAMETERS
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
60
f3a:
50
INDUCTIVE OR RESISTIVE LOAD
I
I
TJ = 150·C
RGE = 100 OHMS
w
::&
a..
'i"
!:!
40
~
a:
a:
:::I
30
0
a:
~
-'
0
0
~a..
20
IGTSE20
IGT8D2010
o
o
100
000
300
400
500
600
PEAK COLLECTOR-EMITTER VOLTAGE, VCE, VOLTS
FIGURE 5. TURN-OFF SAFE OPERATING AREA
100
50
.......
.......
..........
r-....
......
"
,~
"
~~
l'..
""-""' """"'" ~ .....
10#£sec
100 ~sec
.........
In"1"
~
..... I~Jslc
"-
1,00r,ec
0.2 f - -
r-- SIN~LE.PULSE
Tri
0.1
1
5
IGTSE20
IGT6D20
10
20
50
100
200
~
ad 1.0
i
- II
0.4
:;l
0.2
'"
0.1
~
ffi
in 0.04
~
DC,
111
2.0
~
0.02
.....
-
SINGLE RECTANGULAR PULSE
0.01
500
10-5
VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
10,,3
IT 11111 I LIIUI
Hr2
PULSE WIDTH, SECONDS
FIGURE 6. TURN-ON SAFE OPERATING AREA
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
363
-
L= 550jlh
PULSE
GENERATOR
Sl (SWITCH POSITION) -1 CLAMPED INDUCTIVE LOAD
-2 RESISTIVE LOAD
L·ICIMAXIMUM)
PULSE WIDTH
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
V,'/
o
--10%
I
I
I
I
I
o
RESISTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
364
mTM1J~~~
Insulated Gate Bipolar Transistor
This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state conduction losses similarto bipolar transistors. The device design
and gate characteristics ofthe IGT'II Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25° C and 150° C offering extended power handling capability.
20AMPEFlES
400, 500 VOLTS
EQUIV. RDS(ON) =0.145 n.
N-CHANNfEl
c
o~
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r
The IGT'II Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
.815
(20.70)
r.6'S ('S.62)Y.'28 (3.2S)
.r-
+/ II] _ C±J\~
I,~u
.2,S
(S.46)
--.l..
ff-'l-'l-
Features:
]~j
• Low VCE(SAT) - 2..5V typ @ 20A
:::
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
: .: :~ ~:;:,i:."""
2
3
• High current handling - 20 amps @ 90° C
maximum ratings (Tc = 25° C)
RATING
Collector-Emitter Voltage, VGe = OV
Collector-Gate Voltage, RGe = 1Mn.
Continuous Drain Current @ T C = 90° C
@TC=25°C
Pulsed Collector Current<')
Gate-Emitter Voltage
Total Power DisSipation @TC = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
IGT8D21
400
400
20
32
80
±25
125
1.0
IGT8E21
500
500
20
32
80
±25
125
1.0
UNITS
Volts
Volts
TJ, TSTG
-55 to 150
-55 to 150
°C
ReJC
1.0
1.0
°CIW
TL
260
260
°C
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
A
A
A
Volts
Watts
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
365
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
BVCES
400
500
-
-
-
-
250
4.0
I1A
mA
-
±500
nA
2
4
2
5
Volts
-
VCE(SAT)
-
2.5
2.6
3.0
2.9
Volts
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(VGE = OV, IC = 25OILA)
IGTSD21
IGTSE21
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, TC = 25°C)
(VCE = Max Rating, x O.S, VGE = OV, Tc = 125O C)(2)
ICES
Gate-Emitter Leakage Current
(VGE = ±20V)
IGES
. Volts
(2) Applies for 3.3 0 C per watt maximum thermal resistance, case to ambient.
on characteristics(3)
Gate Threshold Voltage
(VCE = VGE, Ic = 5OOILA)
TC= 25°C
TC = 150°C
VGE(TH)
Collector-Emitter Saturation Voltage
Ic = 20 A, Tc = 25°C, VGE = 15V
Ic = 20 A, Tc = 150°C, VGE = 15V
IC = 20 A, Tc = 25°C, VGE = 10V
-
dynamic characteristics
VGE = OV
Cies
-
pF
VCE = 25V
C oes
-
2300
Output Capacitance
700
-
pF
Reverse Transfer
Capacitance
f = 1 MHz
C res
-
10
-
pF
td(on)
100
ns
0.60
-
ILS
3.0
-
ILs
Input Capacitance
switching characteristics(3)
(see figures 8& 9)
Rise Time
IC = 20A, VCE = Rated VCES
Turn-off Delay Time
VGE = 15V
Fall Time
RG(on) = 50.0, RGE = 100.0
tf
-
Turn-off Delay Time
I nd uctive Load, T C = 125° C,
L = 550ILH, Ic = 20A,
tdoff
-
O.S
1.4
ILS
Fall Time
VCE(CLAMP) = Rated VCES
tf
-
O.S
1.0
ILS
Equivalent
Fall Time
VGE = 15V
tf(eq)
-
0.6
O.S
ILS
Turn-off
Switching Losses
RG(on) =50.0, RGE = 100n
Ef
-
2.6
3.2
3.2
4.0
mJ
Turn-on Delay Time
Resistive Load T C = 125° C
tr
td(off)
IGTSD21
IGTSE21
150
ns
(3) Pulse test: Pulse widths:S 300 psec, duty cycle:S 2%.
80r-----.------r~~-.,-----r-----._----,
50
VGE =12V
r-------,------~-------.-------.------_,
70r-----~----_r~~~--~--r-----+_----~
~
..ffi
40r------+------_r---
~
9 30r-----~------~--~~~~~---+------~
m
~
I
B
8
o
VGE =4V
L__~~~~;;~;;;;~~~;b~~;1~VG[E~=5[V~
o
4
6
8
20
10 f-------I--~<_::.~-------
°0~--~~1------~2------~3------~4------~
10
COLLECTOR TO EMITTER VOLTAGE, VCE, VOLTS
COLLECTOR·EMITTER SATURATION VOLTAGE, VCE(SAT), VOLTS
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
366
160
~
140
~~
~~
8VCES
"
I~....,~i~b==~~;;;;;;..1II!!!9~~~=t===~VCE(SAT)
@20A
~
~~
,4----+----+---~'f'oo;;;:::_-__..,
'""
)
VGE(TH)
1\
i
IC= 500"A
IC = 20A. VGE = 15V
IC =2A. VGE =15V
'C=' MA
f'
0
100
50
20
10
25· TYPICAL VALUE
4.0V
2.5V
'.IV
VCESRATING
CONDITIONS
. " - VG/'5V
VGE =<:;V
VCE(SAT)
@2A
30
150
CASE TEMPERATURE. ·C
DC COLLECTOR CURRENT.IC. AMPERES
FIGURE 4. TYPICAL TEMPERATURE
FIGURE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE
VS. DC COLLECTOR CURRENT
DEPENDENCE OF PARAMETERS
60
UI
w
50
,
,
0:
INDUCTIVE OR RESISTIVE LOAD
~
TJ =150·C
RGE =,00 OHMS
...
W
:i
Y
40
Iiw
0:
0:
:::I
U
30
0:
e
U
~
20
0
IGTBE2'
IGTBD2'-
u
!...
10
o
o
,00
200
300
400
500
600
PEAK COLLECTOR-EMITTER VOLTAGE. VCE. VOLTS
FIGURE 5. TURN-OFF SAFE OPERATING AREA
100
.,
50
.........
f:
~
~
1""
f'.""
~
l"'o..
" ~"
10.usee
100 ",sec
2
~
1.0
"
1"-
'n"!"
...... '~mlslc
~
'Ioor,ec
0.5
0.2
o.
,
W 1.0
~
~
"-
r-- r-- SINGLE PULSE
:tJIII
- II
DC,
IGTBE2'IGTBD2'10
20
50
100
200
~
2.0
~
5
I§
8
}}
r-...
i'
~
~
r-....
0.4
i!!
~
~j!:
".
0.2
0.1
F
ffi
iii 0.04
~
0.02
r-
U I1IU
0,01
lit'
500
""i" ''1 PULSE
S!N~L.E.
10-3
11111111
10- 2
PULSE WIDTH. SECONDS
VCE. COLLECTOR-EMITTER VOLTAGE. (VOLTSI
FIGURE 7. MAXIMUM TRANSIENT
THERMAL IMPEDANCE
FIGURE 6. TURN-ON SAFE OPERATING AREA
367
L= 550llh
PULSE
GENERATOR
SI (SWITCH POSITION) -1 CLAMPED INDUCTIVE LOAD
-2 RESISTIVE LOAD
RGIONt
L-I C (MAXIMUM)
PULSE WIDTH
(RGEN+RS)(RGE)
RGEN+RS+RGE ,PULSE W)DTH2:60Ilsec, VCC
FIGURE 8. BASIC SWITCHING TEST CIRCUIT
/'"-----1---
V GE
04-- 10%
I
Ic
o
iI
I
90%
V GE
r--r-t
i'----
1'-.-----.
oJ
I
-----~-I
I
I
I
•
"I,
IIldlOfll I
I
)~II
--I I
10%
I I I
I I I
0
I
If
90%
I
-1----+--+-
I I I
II II I, I
~--90%
II
"I
VCEICLAMP)
Idl on )
VCE
o
+-lYn-1
I I I
l
I
I I If I
~
I
I
Id loff)
RESISTIVE LOAD
INDUCTIVE LOAD
(WAVEFORMS NOT TO SCALE)
FIGURE 9. SWITCHING WAVEFORMS
368
I
GE
BIPOLAR
SPECIFICATIONS
369
370
VERY HIGH GAIN
D40C Series
NPN POWER DARLINGTON
TRANSISTORS
30-50 VOLTS
.5 AMP, 6.25 WATTS
Designed for driver, regulator, touch switch, I.e. driver, audio
output, relay substitute, oscillator, servo-amplifier, and
capacitor multiplier applications.
Features:
NPN
COLLECTOR
• hFE Min. - 10,000 and 40,000
EMITTER
CASE STYLE TO-202
• 1.33 Watt power dissipation at TA = 25°
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.128-0.132
(3.251-3.353)
0.48(}-0.520
(12.192-13.208)
0.065-0.075
(1.651-1.905)
0.285-0.315
(7.237-8.001)
~ '~~"~
1.21 REF.
(30.734)
0.405-0.425
(10.287-10.795)
-'::-:0'0=-=95-0="05-~1
1_
(2.413-2.667) +l
'-0.095-0.105
.
0.026
(0.660)
maximum ratings (TA
~
~ (2.413-2.667)
0.095-0.106
(2.413-2.667)
l
I
-...j
0.170-0.190
(4.318-4.826)
00'9-0026
.
.
(0.483-0.660)
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(')
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@TC=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VESO
IC
ICM
Is
PD
D40C1
30
30
13
.5
1.0
0.1
1.33
6.25
D40C4
40
40
13
.5
1.0
0.1
1.33
6.25
D40C7
50
50
13
.5
1.0
0.1
1.33
6.25
UNITS
Volts
Volts
Volts
A
TJ, TSTG
-55 to +150
-55 to +150
-55 to +150
°C
R8JA
R8JC
75
20
75
20
75
20
°C/W
°C/W
TL
260
260
260
°C
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Pulse Test: Pulse Width
=300ms. Duty Cycle:S 2%.
371
=25° C) (unless otherwise specified)
electrical characteristics (Tc
I
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
30
40
SO
-
Volts
-
-
off characteristics(1)
Collector-Emitter Voltage
(Ic = 10mA)
D40C1
D40C4
D40C7
VCEO
Collector Cut-off Current
(VCE = Rated VCES)
(TC =2S°C)
(TC = 1S0°C)
ICES
Icso
-
-
O.S
20
p,A
-
IESO
-
-
0.1
pA
Emitter Cutoff Current
(VES = 13V)
second breakdown
I
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 2
on characteristics
DC Current Gain
(IC = 200mA, VCE
hFE
=SV)
Collector-Emitter Saturation Voltage
(Ic =SOOmA, Is =O.SmA)
Base-Emitter Saturation Voltage
(IC =SOOmA, Is =O.SmA)
10K
-
60K
VCE(sat)
-
-
1.S
V
VSE(Sat)
-
-
2.0
Volts
CCSO
-
-
220
pF
fT
-
7S
-
MHz
td + tr
-
100
-
ns
3S0
-
800
-
dynamic characteristics
Collector Capacitance
(VCE = 10V, f =1MHz)
Current Gain - Bandwidth Product
(Ic = 20mA, VCE = 5V)
switching characteristics
Resistive Load
= 1A, IS1 = IS2 = 1mA
VCC =30V, tp = 2S p,sec
. Delay Time + Rise Time
Ic
Storage Time
Fal) Time
ts
tf
(1) Pulse Test: PW:5 300ms Duty Cycle:5 2%.
lOOK
BOK
60K
40K
V
20K
vi--'
10K
8K
6K . /
.......
.s::
-
.-
4K
V
/
IK
800
600
""-
--H
"
1'\
~
TJ " 25' C
I
V
2K
--.....
TJ '150'C
I
J.-+-
........
T • -55'C
J j
I I
PULSEO MEASUREMENT,
PULSE WIDTH· 2 MILLISEC
DUTY CYCLE ~ 2 %
tVCE =5 VOLTS
ttD40CI, 4, AND 7
400
200
100
I
2
4
6 8 10
20
d
40 6°8 oo
200
4°~o<¥°9000
VCE -COLLECTOR-TO-EMITTER VOLTAGE -VOLTS
IC-COLLECTOR CURRENT -MILLIAMPERES
FIG. 2 SAFE REGION OF OPERATION
FIG 1. TYPICAL hFE vs.IC
372
I II
3
J.W-'.!..~E!J
VCE' 20V
IC -200mA
2
---
WITHOUT TAB"
I
J"i.
f---I
JUNC~~'TO'~BIENT
;~
J
T -25°C
__
~J
.- -
TJ -150°C
- ---- 1---1-- 1----
-
T/-55°C
TJ -2S 0 C
WiTirL
"
T __Loc
T/150°C
JUNCTION·TO-TAB
"",,-,,
-
,..d-'- ~
--
~ 1}
~~~
F"
VCE (SAT)
r
rc Ira -1000
.2
I
10
O. I
TIME-SECONDS
10
40
60 80 100
200
400
rc-COLLECTOR CURRENT-MILLIAMPERES
20
FIG. 3 MAXIMUM TRANSIENT THERMAL IMPEDANCE
600 BOO 1000
FIG. 4 TYPICAL SATURATION VOLTAGES
10
B
\.
6
UI
g
I
2
ffl
'"~
o
>
.B
~
.6
~
.4
II:
TJ -25-C-
J
'" ~,J
4
~
J
r-----
1-.- I--
'"
____r C -0.5
!. ..I.
~MPERE
r C-0.25 AMPERE
rC -0.1 AMPERE
:::>
~
.2
O. I
10
20
40
80
200
600 1000
60
100
400
BOO
2000
ra-BASE CURRENT-MICROAMPERES
4000 BOOO
6000 10,000
FIG. 5 TYPICAL SATURATION VOLTAGES
1000
800
600
400
UI
C
./
./
200
!£
~
<
':'-
....z
W
II:
II:
:::J
0
100
80
60 ~TJ=l60'C.,
40
/
20
./
""
I.:
./
8
./
~
/
V
/
1.0
8
6
I
I
I
I
0.1
0.8
6
5
TJ = -55'C
if
~
----.:
.........
~ ......
IIJ
!Il
III
2
II:
t~
8I
12
.........
3
...J
10
- --
~ 4
I
I
1
r----
(3
I
w
8
8
tlz
/
/
TJ=25'C/
/
10
8
6
Ul
<
~
IF
V
./
~ 10
/
14
16
18
2.0
VBE' BASE·TO· EMITTER VOLTAGE· VOLTS
2.2
o
III
.y
I
2
3
45618910
20
304050
VCB -COLLECTOR-TO-BASE VOLTAGE -VOLTS
FIG. 7 TYPICAL CCBO VS. VOLTAGE
FIG. 6 TYPICAL INPUT CHARACTERISTICS
373
60
1090
80 100
374
040D Series
NPN POWER TRANSISTORS
30 - 60 VOLTS
1 AMP, 6.25 WATTS
COMPLEMENTARY TO THE D41D SERIES
The General Electric 0400 is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-202
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)·
• High free-air power dissipation
• NPN complement to 0410 PNP
• Low collector saturation voltage (O.SV typo @ 1.0A Ie)
0.480-0.520
(12.192-13.208)
• Excellent linearity
• Fast Switching
0.285-0.315
(7.237-8.001)
l
0.065-0.075
(1.651-1.905)
X 45°
CH;MFER~
1.21 REF.
(30.734)
0.405-0.425
(10.287-10.795)
0095-0105
(2413-2 :6::6
~I1_
-.J
(0660)
I
[
~~ ~~~:~ ~~;)
I
1+
0095-0 106
0.170-0.190
~ 0-';~~~~:~;:-:~~~""'~:2~6)
-.j
(0.483-0.660)
(2.413-2.667)
maximum ratings (TA
=25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @ T A = 25° C
@Tc=25C
Operating and Storage Junction
Temperature Range
(unless otherwise specified)
SYMBOL
04001,2
04004,5
04007,8
UNITS
VCEO
VCES
VESO
IC
ICM
IS
PD
30
45
45
60
60
75
5
1
1.5
.5
1.67
6.25
5
1
1.5
.5
5
1
1.5
.5
Volts
Volts
Volts
1.67
6.25
1.67
6.25
Watts
TJ,Tstg
-55 to +150
-55 to +150
-55 to +150
°C
ROJA
ROJC
75
20
75
20
75
20
°C/W
°C/W
h
+260
+260
+260
°C
A
A
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Pulse Test Pulse Width
=300ms Duty Cycle:::; 2%.
375
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
30
45
60
-
-
Volts
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic
04001,2
04004,5
04007,8
=10mA)
Collector Cutoff Current
(V CE =Rated VCEO)
(V CE =Rated VCES)
Emitter Cutoff Current
(VES =5V)
VCEO(sus)
Tc =25°C
TC =150°C
ICES
lEBO
-
-
-
-
0.1
1.0
-
J.lA
-
0.1
J.lA
second breakdown
ISecond Breakdown with Base Forward Biased
SEE FIGURE4
FBSOA
on characteristics
DC Current Gain
(IC =100mA, VCE
(Ic
=2V)
=1A, VCE =2V)
Collector-Emitter Saturation Voltage
(Ic =500mA, Is =50mA)
04001,4,7
04002,5,8
hFE
50
120
04001,4,7
04002
04005,8
hFE
10
20
10
04001 , 2, 4, 5
04007,8
150
360
-
-
-
-
-
-
-
0.5
1.0
Volts
VBE(sat)
-
1.5
Volts
CCBO
-
8
.-
pF
fT
-
200
-
MHz
t(j + tr
-
25
-
nS
ts
tf
-
-
200
50
-
VCE(sat)
Base-Emitter Saturation Voltage
(Ic =500mA, Is =50mA)
-
-
dynamic characteristics
Collector Capacitance
(VCS =10V, f =1MHz)
Current-Gain - Bandwidth Product
(Ic =20mA, VCE =10V)
switching characteristics
Resistive Load
OelayTime+
Rise Time
IC = 1A, IB1
Storage Time
Fall Time
VCC
= IB2 =O.1A
=30V, tp =25 ~sec
(1) Pulse Test PW = 300ms Duty Cycle:S 2%.
TJ.I~.C
200
VCE-2V
040DI,4.7
""--
TJ-ut
100
0
-
T.... "S.c
0
~
0
--
-
200
~
'-
.....
...........
" r\.
-
:r..
-,we:
--....
T.. e- as•c
~
l'\.
,1'1
I'
1'-.1\.
~,
r-.... f'.. I\~
0
10"
..........
-..
I'~
10
VeE- 2V
040Da.U.
-~
... ZI-C
0
10'
10 I
10"
Ie: - COLLECTOR CURREffT -iliA
FIG. 1
. FIG. 2
TYPICAL H FE VS IC
376
I.'
FORWARD BIASED OPERATION
DUTY CYCLE '!S 5O-t.
TC '!S 70·C
2000
I _SEC PULSE
S~
p.SEC PULSE
DCICURRE~ ~ 1/10 100
,.SEC PULSE
I
PEAK CURRENT LIMIT
2
Xc/l:.- 1O
_0
V~E(S"'T)
-
"I--- +--
t::;:;;- ~
l - t- I'\,
V
I- I-r-
E
V
I
I
i
'"
20 0
~
/1
8,
U
H
VII
MAK DC POWE~ - '
DISSIPATION AT
TEMPERATURE
100
o0
~------I
10 Z
TJ •
j5-j
/
~
~
l~ ~ I: I
",~- I
I~ ~'
0
VCES MAX: 04007,8
I--
I I I
0
f~G.
100
4
G
B 10
~NCTIONTO_
vtMBIENT T'THTAB
~
,......
JUNCTION TO TAB
L
V
/
I
I
V
VCE; 20V
Ic;200mA -
lfr'
I
1
20
_
J,. ~
t
40
I
I
1-0
I
60
eo 100
4 SAFE REGiON OF OPERATION
JUNCTION TO AMBIENT
WITHOUT TAB
lfr'
~-:.
MAXIMUM COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG.3 TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
1
I
I
'\1 ~
VCES MAX' 04001,2 _
VCES MAX: 04004,5 _
ID 3
I
1 I
\~ ~
0
Xc·COLLECTOR CURRENT - mA
1
1000,.SEC PULSE
,.-50 ,SEC PULSE
0
VV
T.I·I~·C
10
/'
7Q-C CASE
u
1/1/
VeEtsAT)
I'\. \..'\:
LIMIT
60 0
40 0
1//
Z
MAX
0-
I
T", -15O-C
4
0
I--"'v
V
T oI - 25-C
..,
~
o
100
a
00
,
10-
I
10-
10
100
TIME IN SECONOS
FIG. 5 MAXIMUM TRANSIENT THERMAL IMPEDANCE
377
378
PNP POWER TRANSISTORS
0410 Series
COMPLEMENTARY TO THE 0400 SERIES
-30 - -60 VOLTS
-1 AMP, 6.25 WATTS
The General Electric 0410 is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
PNP
COLLECTOR
EMITTER
CASE STYLE TO-202
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High free-air power dissipation
• PNP complement to 0400 NPN
• Low collector saturation voltage (-O.SV typo @ 1.0A Ie)
• Excellent linearity
0.480-0.520
(12.192-13.208)
• Fast Switching
0.285-0.315
(7.237-8.001)
0.065-0.075
(1.651-1.905)
1.21
REF.
(30.734)
+--L-...............
CHX3A~~;ER~
,-
0.095-0.105 ~I
,2.413.2.687)..j
t-0.095-o.105
(2.413-2.667)
0.026
(0.660)
0.095-0.108
(2.413-2.687)
~
maximum ratings (TA = 25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@TC=25C
Operating and Storage Junction
Temperature Range
l
W
0.405-0.425
(10.287-10.795)
I
+I
0.170-0.190
(4.318-4.826)
0019-{)026
.
.
(0.483-0.660)
(unless otherwise specified)
SYMBOL
UNITS
Volts
Volts
Volts
A
VCEO
VCES·
VESO
IC
ICM
IS
Po
04101,2
-30
-45
-5
-1
-1.5
-.5
1.67
6.25
04104,5
-45
-60
-5
-1
-1.5
-.5
1.67
6.25
04107,8
-60
TJ,Tstg
-55 to +150
-55 to +150
-55 to +150
°C
R8JA
R8JC
75
20
75
20
75
20
°C/W
°C/W
TL
+260
+260
+260
°C
-75
-5
-1
-1.5
-.5
1.67
6.25
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle:5 2%.
379
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
I SYMBOL . I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
-30
-45
-60
-
-
Volts
-
-
-0.1
-1
-
pA
-
-0.1
pA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic
04101,2
04104,5
04107,8
=10mA)
VCEO(sus)
Collector Cutoff Current
(VCE =Rated VCEO)
TC =25°C
(VCE =Rated VCES)
TC =150°C
Emitter Cutoff Current
(VEB =5V)
ICES
lEBO
-
second breakdown
ISecond Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 7
on characteristics
OC Current Gain
(Ic =100mA, VCE
(Ic
04101,4,7
04102,5,8
04101,4,7
04102
04105,8
=2V)
=1A, VCE =2V)
Collector-Emitter Saturation Voltage
(Ic =-500mA, IB =-50mA)
-
-
150
360
-
-
-
-
-
0.5
1.0
Volts
VBE(sat)
-
1.5
Volts
CCBO
-
10
-
pF
for
-
150
-
MHz
td + tr
-
50
-
nS
ts
tf
-
75
40
-
hFE
hFE
04101,2,4,5
04107,8
VCE(sat)
Base-Emitter Saturation Voltage
(Ic =-500mA, IB =-50mA)
50
120
10
20
10
dynamic characteristics
Collector Capacitance
(VCB =10V, f =1MHz)
Current-Gain - Bandwidth Product
(Ic =-20mA, VCE =-10V)
switching characteristics
Resistive Load
OelayTime+
Rise Time
Ic =-1A, IB1
Storage Time
Fall Time
VCC
(1) Pulse Test PW
2..
..
.-
~".I2&.C
-
vcJ'_lvl
zoo
D4IDI,4
-....... .......
~.....c
-
--
TJ--IIO-C
zo
•
=-30V, tp =25 ~sec
=300ms Duty Cycle:5 2%.
'00
;
=IB2 =-0.1A
-..
-101
!'-"
'00
'"
""'........."
'" I'
l"-
:r,,·IZ5"C
:r·u-c
l..-c
- r-..
.
I.
-.0'
••-•
" '~
Ie -COLLECTOR CURRENT· "" ..
FIG_1
380
.......
~
~
'" "
i\ i\~
~
-10
1 c-CCLUCTCII CUIUIIIIT-_.
FIG. 2
TYPICAL hFE VS. IC
~
........
••
~,
~'-IV
....1,1
r--..
~
-lOS
~J.'.'Z5-C
1.
I ..
TJ
.
VeE
04101
~
--.....
2S-C
'00
.
T~
':10
•
-ss-c
r--
t""'
•
,.
, -,
•
.I_. v
-
-
r.....
T~--"·C
"'
...........
t--.
........
f'....'"
'l"
•
'" ....... 1",\'
r-.. ~
.
0
~
f'- ~r-,.I\
~~
'0
~~
.
04100
t-- f...t--,.
TJ-ZS-C
2. .
,.-,
-
10
'0
I C-COLLECTOR CURR[NT- _"
vc,-~v
TJ -IIS·C
-
~
-
FIG. 3
FIG. 4
TYPICAL hFE VS. IC
-I"
T
II
I
t---- Ic' IS· 10
r7
-1.2
~
~
-10
.,
VI
:: -0.8
!:i
o
>
z
~-O.6
.~
~
-0.4
---
TJ .2S"C
VCE(SAT.>
f..-- .....
V-- ......
~V
~(
/
~
II
ty. , /
-~"i
/
I
TJ " 12S"C
VCE(SATI
-
-Q2
I
7
I
./
/
\.......- ,/'
II
,
j
TJ" 2S"C-
/
I- ~ V
o
_10 2
-10 1
I:C - COLLECTOR CURRENT-mA
FIG.5 TYPICAL SATURATION VOLTAGE CHARACTERISTICS
FORWARD BIASED OPERATION
DUTY CYCLE"" 50%
TC""70·C
-2000
100
JUNCTION TO AMBIENT
WITHOUT TAB
L/
./"'"
""'-:.J..--"
-1000
!/.,UNCTION TO
-800
tTH TAB
-800
tMBIE~T
~
JUNCTION TO TAB
~
...!z
.....-
/
::;)
u
V
a:
-200
0
VCE=20V
Ic=200mA
/
1
-400
a:
a:
t
~
....
0
U
I
j}
-100
-80
-80
V
-40
1
10-'
10-'
10"'
10-'
10-'
10
100
TIME IN SECONDS
FIG. 6
-20
I----I---_+_-
MAXIMUM TRANSIENT THERMAL IMPEDANCE
-10L-____
~
-2
-1
____
L_~~L-L_
-4
-8
-8 -10
____
~
-20
____
~~~uu
-40
-80 -80 -100
MAXIMUM COLLECTOR TO EMITTER VOLTAGE -VOLTS
FIG. 7
381
SAFE REGION OF OPERATION
382
D40E Series
NPN POWER TRANSISTORS
30 - 80 VOLTS
2AMP, 8 WATTS
COMPLEMENTARY TO THE D41E SERIES
The General Electric D40E series are power transistors
designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating
at frequencies from DC to greater than 0.1 MHz; series, shunt
and switching regulators; low and high frequency inverters/
converters; and many others.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-202
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High free-air power dissipation
• NPN complement to D41E PNP
• Low collector saturation voltage (0.5V typo @ 1.0A Ie)
0.480-0.520
(12.192-13.208)
• Excellent linearity
• Fast switching
0.285-0.315
(7.237-8.001)
0.065-0.075
(1.651-1.905)
X45°
121 REF
(30734)
0.405-0.425
(10.287-10.795)
(~~i~)
0095-0 105
(2413-2667)
CH;MFER~
~I1_
-..J
~o 095-0 105
0026
(0 660)
1-
l
~
(2413-2667)
~
~
0170-0190
(4318-4826)
-;;;0:;;;;019",-0~02;;.6
(0 483-0 660)
0095-0106
(2 413-2 667)
maximum ratings (T A = 25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@TC=25°C
Operating and Storage Junction
Temperature Range
(unless otherwise specified)
SYMBOL
D40E1
D40E5
D40E7
VCEO
30
VCES
VEBO
Ic
ICM
IB
PD
45
5
2
3
1
60
70
80
90
1.33
8
5
2
3
1
1.33
8
5
2
3
1
1.33
8
T J,Tstg
-55 to +150
-55 to +150
-55 to +150
°C
R8JA
R8JC
75
15.6
75
15.6
75
15.6
°C/W
°C/W
h
+260
+260
+260
°C
UNITS
Volts
Volts
Volts
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Pulse Test Pulse Width
=300ms Duty Cycle:5 2%.
383
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
30
60
80
--
Volts
0.1
/lA
0.1
/lA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(IC
D40E1
D40E5
D40E7
=10mA)
ICES
-
-
lEBO
-
-
VCEO(sus)
Collector Cutoff Current
(VCE = Rated VCES)
Emitter Cutoff Current
(VEB =5V)
-
second breakdown
ISecond Breakdown with Base Forward Biased
SEE FIGURE 1
FBSOA
on characteristics
DC Current Gain
(Ic =100mA, VCE =2V)
(Ic =1A, VCE =2V)
Collector-Emitter Saturation Voltage
(Ic =1.0A, IB =0.1A)
Base-Emitter Saturation Voltage
(IC =1.0mA, IB =0.1A)
hFE
hFE
50
10
-
-
-
-
VCE(sat)
-
-
1.0
Volts
VBE(sat)
-
-
1.3
Volts
CCBO
-
9
-
pF
fT
-
230
-
MHz
ld + tr
-
130
-
nS
ts
tf
-
400
170
-
dynamic characteristics
Collector Capacitance
(VCB =10V, f =1MHz)
Current-Gain - Bandwidth Product
(Ic =100mA, VCE =10V)
switching characteristics
Resistive Load
Delay Time +
Rise Time
IC = 1A, IB1 = IB2 = 0.1A
Storage Time
Fall Time
VCC
=30V, tp =25ILsec
(1) Pulse Test PW = 300ms Duty Cycle:5 2%.
MAX. POWER DISSIPATION
TCASE :!: 70 0 C
PElK
'-CURRENT
r% -
MAX6c~ "-
CURRENT,,\:
IA
~~
PULSED OPERATION
DUTYI CYCL~ :!:
500
-~.
IC\~
TJ=2S 0 C
l,}~ loOms PULSE
" ~ "-
U
H
-r" ~
--
J J
TJ"-55°C
~----
'-
VCE=2V
MAX. VCEO D40EI
I
I
if
I
I
I
I I
MAX. VCEO D40E5
"cE~ D40E~
\"-- ....." ,\
"
MAX.
I
III
10V
I
I
!
I
l
~:~ l\1
\
~
i\ ~
N
~~
I
I
100V
~
\~
30
10
0.01
1.0
0.10
IC-AMPERES
VCE
FIG. 1
- 1\,
I\,\,
I
IV
100
~i ~
O.lA
...........
I
10ms PULSE1....
D.C.~
--....,-r --.......... ,
TJ=ISOOC
~f.--0.lm81 PULS~
FIG.2
SAFE REGION OF OPERATION
384
TYPICAL HFE VS IC
J
TC 12S0C
w
0
8
~
c
01
wI
TClsooc\
~ 6
TC rooc
!;i
,
;!:
lll.
4
'\.
$'1
on
w
0
x I
c
0Wi1
w
0
~I
XI
c
~I
0
wI
~I
~
41
"L
I
TC 100°C
I .............
I
............... !""'---II
I
I
I
I
I
2 '--TC 112S0C
I
10
J
30
20
eo
40
""
.i
~
xl
ctl
::EI
I
I'
I
I
70
60
80
FIG. 3 MAXIMUM PERMISSIBLE DC POWER DISSIPATION
JIC/IB=IO
I.
I
1.0
--
1
TJ=2S oC
=-- VBE(SATl
TJ"'ISO°C
-
/J '?
O. I
,~O~/
~
-;::.
~
"
f/
V/
~
~~
./
~
'l-~.C
~:I"I
VCE(SAT)
0.0I0 .01
0.1
1.0
IC-AMPERES
FIG. 4 TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
100
JUNCTION TO AMBIENTnWITHOU,TTAB
I
AM~~~NC;I~~T~O~AB
10
i-'"""
/
,
-
V /
/ /
..,.......-JUNCTION TO CASE (TAB)
I
I
VCE= 20V
IC = 267 mA
V
/
.1
/
10'
/
10'
10'
10'
10'
10'
TIME IN SECONOS
FIG. 5 MAXIMUM TRANSIENT THERMAL IMPEDANCE
385
386
D41E Series
PNP POWER TRANSISTORS
-30 • -80 VOLTS
-2 AMP, 8 WATTS
COMPLEMENTARY TO THE D40E SERIES
The General Electric D41 E series are power transistors
designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating
at frequencies from DC to greater than 0.1 MHz; series, shunt
and switching regulators; low and high frequency inverters/
converters; and many others.
PNP
COLLECTOR
~'-EQ
EMITTER
CASE STYLE TO·202
Features:
•
•
•
•
•
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
High free-air power dissipation
PNP complement to D40E NPN
Low collector saturation voltage (0.5V typo @ 1.0A Ie)
Excellent linearity
Fast Switching
0.360-0.410
(9.144-10.414)
.125 REF.
(3.175)
0.480-0.520
(12.192-13.208)
0.085-0.075
(1.651-1.905)
0.285-0.315
(7.237-8.001 )
X 45°
CHAMFER~
1.21 REF.
130.734)
1
2
3
0.405-0.425
(10.287-10.795)
0.095-0.105
(2.413-2.687)
)
~
0.095-0.108
(2.413-2.687)
maximum ratings (T A
=25
0
C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation@TA=25°C
@TC=25°C
Operating and Storage Junction
Temperature Range
W
+I~1+0'096-O'105
12.413-2.667)
0.026
(0.660)
l
I
+I
0.170-0.190
14.318-4.826)
0.019-0.026
10.483-0.680)
(unless otherwise specified)
SYMBOL
D41E1
VCEO
VCES
VE80
Ic
ICM
18
Po
-30
-45
-5
-2
-3
-1
1.33
8
D41ES
-60
-70
-5
-2
-3
-1
D41E7
-80
-90
-5
1.33
8
-2
-3
-1
1.33
8
UNITS
Volts
Volts
Volts
A
A
Watts
T J,Tstg
-55 to +150
-55 to +150
-55 to +150
°C
R8JA
R8JC
75
15.6
75
15.6
75
15.6
°C/W
°C/W
TL
+260
+260
+260
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle::; 2%.
387
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
-30
-60
-80
-
MAX
UNIT
off characteristics(1)
Collector-Emitter Sustaining Voltage
D41E1
D41E5
D41E7
(IC = 10mA)
Collector Cutoff Current
(VCE = Rated V CES)
Emitter Cutoff Current
(VEe = 5V)
VCEO(sus)
ICES
-
-
IEeO
-
-
-
Volts
-0.1
pA
-0.1
fJ.A
-
second breakdown
ISecond Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 1
on characteristics
DC Current Gain
(IC = -100mA, VCE = -2V)
(Ic -1A, VCE = -2V)
hFE
hFE
50
10
-
-
-
Collector-Emitter Saturation Voltage
(Ic = -1.0A, Ie -0.1A)
VCE(sat)
-
-
1.0
Volts
Base-Emitt!3r Saturation Voltage
(Ic = 1.0mA, 18 = O.1A)
.
VeE(sat)
-
-
-1.3
Volts
CC80
-
13
-
pF
fT
-
175
-
MHz
t(j + tr
-
180
-
nS
ts
tf
-
250
110
-
=
=
-
dynamic characteristics
Collector Capacitance
(Vce =-10V, f =1MHz)
Current-Gain Bandwidth Product
(IC =-100mA, VCE =-10V)
switching characteristics
Resistive Load
Delay Time-t
Rise Time
IC = -1A, 181 = 182 = -D.1A
Storage Time
VCC = 30V, tp = 25 pSec
Fall Time
-
(1) Pulse Test PW = 300ms Duty Cycle::; 2%.
I
MAX. POWER DISSIPATION
TCASE S 70·C
-_ PEAK
CURRENT
MAXDC~ "-
CURRENT,,\:
IA
~~
"
PUL.SED OPERATION
DUTY CYCL.E S 50% (-----
O.lA
:\..
~ 1.0ms PUL.SE
~~!I..
,
T~=-S~'c
------
1- ~
"
100
--...
,
,~
-
1\ '\.
......
VCE=2V
"'
~\
"
.,~\
\: ~
\.'\
MAX. VCEO D41EI
I
I
I
I
II'
I
I
I
MAX. VCEO D41E5
MAX. "cE!
I
IV
r- -,
TJ"2S"C
i'\~
~~
D.C.
--- --.....,-r
T.J=ISO·C
I
I
I
I( :,.-O.lms PUL.S~
10ms PUL.SE ....
500
I I',
D4IE~
10V
I
\1 .\1
I
\' ~
I
!
1
~
-:
1
30
'\ ~
~~
10
0.01
1.0
0.10
IC-AMPERES
100V
FIG. 2 TYPICAL HFE VS IC
VCE
FIG.1 SAFE REGION OF OPERATION
388
-'
I
TC 250C
8
.r'"0
01
TC1500C\
'\.
TC ro°c
on
"'I
$'1
)( I
"'I
'";;:0
~
I
TC 100·C
~I
I ..............
0
0
xI
~I
"'I
xl
"'I
:Ill
I
I
~I
............... ____ I
I
I
2 -TC'125 0C
.
""'";
01
",I
I
I
I
10
I
I
20
I
I
30
eo
40
I
60
80
70
FIG. 3 MAXIMUM PERMISSIBLE DC POWER DISSIPATION
1
I.
I
I
I TJ=25°C
IC/IB'"10
1.0
~
""
k--" r-
F-- VBE(SAT)
VL
TJ =150·C
/} ~
o. I
~
~~
•: /
\~o-;"/
-:::::: ~
~
..
~.c
~,,~ ~I
VCEISATI
I
0.00.01
0.1
;IC-AMPERES
1.0
FIG. 4 TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
100
JUNCTION TO AMBIENT"77WITHOU{ TAB
/
/
I
AM~y~~;I~T~o.tAB
i--"""
/
-
./ /
~UNCTION TO CASE (TAB)
I
I
VCE =20V
IC =267 mA
V
I
L
.1
/
V.
10-
10
~,
10
~,
10
~,
,
10
10'
TIME IN SECONOS
FIG. 5 MAXIMUM TRANSIENT THERMAL IMPEDANCE
389
390
VERY HIGH GAIN
D40K Series
NPN POWER DARLINGTON
TRANSISTORS
30-50 VOLTS
2 AMP, 10 WATTS,
COMPLEMENTARY TO THE D41K SERIES
Applications:
•
•
•
•
•
•
•
•
•
NPN
COLLECTOR
Driver
Regulator
Touch Switch
I.C. Driver
Capacitor Multiplier
Audio Output
Relay Substitute
Oscillator
Servo-Amplifier
EMITTER
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.480-0.520
(12,192-13.208)
0.285-0.315
(7.237-8.001)
0.065-0.075
(1.651-1.905)
1.21 REF.
130.734)
Lrn--n-'r-'
0.405-0.425
(10.287-10,795)
10 5 - : l'-'::-:0.0:::!-:95-0:-=:.
1 "'-0,095-0.105
12.413-2.667)
+I
0.026
(0.660)
I'
lW
'~~"~
0.170-0.190
14.318-4.826)
(2,413-2.667)
0.019-0.026
~
J4
(0.483-0.660)
0.095-0.106
12.413-2.667)
maximum ratings (TA = 25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @ TA:: 25°C
@TC::25°C
Operating and Storage
Junction Temperature Range
SYMBOL
D40K1,3
30
30
13
2
3
_2
D40K2,4
50
50
13
2
3
_2
1_67
10
1_67
10
TJ, TSTG
-55 to +150
-55 to +150
°C
ReJA
ReJC
75
12_5
75
12_5
°CIW
°CIW
TL
260
260
°C
VCEO
VCES
VESO
IC
ICM
Is
PD
UNITS
Volts
Volts
Volts
A
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 300ms. Duty Cycle :5 2%.
391
=25° C) (unless otherwise speCified)
electrical characteristics (T c
CHARACTERISTIC
I SYMBOL I
MIN
VCEO
I
TYP
MAX
UNIT
30
50
-
-
Volts
ICES
-
-
.5
pA
IESO
-
-
.1
pA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic = 10mA)
D40K1,3
D40K2,4
Collector Cut-off Current
(VCE = Rated VCES)
Emitter Cutoff Current
(VES = 13V)
on characteristics
DC Current Gain
(Ic = 200mA, VCE
(Ie
(Ic
hFE
10K
-
-
D40K1,2
D40K3,4
hFE
1K
1K
-
-
-
-
D40K1,2
D40K3,4
VCE(sat)
-
-
-
-
1.5
1.5
V
V
D40K1,2
D40K3,4
VSE(sat)
-
-
2.5
2.5
V
CCSO
-
5·
10
pF
fT
-
75
-
MHz
=5V)
= 1.5A, VCE =5V)
= 1A, VCE =5V)
Collector-Emitter Saturation Voltage
(Ic = 1.5A, Is =3m A)
(Ic = 1A, 1s = 2mA)
Base-Emitter Saturation Voltage
(Ic = 1.5A, Is =3m A)
(Ic = 1A, Is = 2mA)
dynamic characteristics
Collector Capacitance
(ICE =10V, f =1MHz)
Current-Gain - Bandwidth Product
(Ic =20mA, VCE = 5V)
(1) Pulse Test: PW :5 300ms Duty Cycle:5 2%.
20
lOOK
80K
-
80K
40K
V
~
--
D40K
"
,
:
.c
BK
~~
~~
PULSE WIDTH - 2 MILLISEC.
DUTY CYCLE 2'11.
~~
u'"
u 3
I
.04
.06.oB.1
.2
. 4 . 6 .8 I
r--.....
4
2
'-
-
2
I
2
\
VCE- ev
T",.25-C
.02
.......... .....
OZ
1\
2K
..........
u~
\
.4K
K
6
.......
8
u'"
_1
6K
1.01
'" 0
CD~
~\
10K
10
III
\.
20 K
"'0
~:
4
6
8 10
40
20
VCB COLLECTOR-TO-BASE VOLTAGE-VOLTS
60
80 100
FIG. 2 TYPICAL CCBO vs. VOLTAGE
4
IC COLLECTOR CURRENT IAMPERES)
4.0
FIG. 1 TYPICAL hFE VS. IC
en 2.0
~
~~
-~/
I----r-r- -- -- --TJ-25-C
fo--1.0
FIG_ 3
TYPICAL
SATURATION
VOLTAGE
VCEISAT)
T",-25-C
z
~ 0.4
Ie/le-eoo
~
~
.. 0.2
o.1
.01
392
..J.....-
I
g
It
D401C
~
~
VBEI~r-
.02
.04
0.2
0.4
0.1
Ie COLLECTOR CURRENT - AMPERES
4
VERY HIGH GAIN
D41K Series
PNP POWER DARLINGTON
TRANSISTORS
-30 - (-50) VOLTS
-2 AMP, 10 WATTS
COMPLEMENTARY TO THE D40K SERIES
Applications:
PNP
COLLECTOR
•
•
•
•
•
•
•
•
•
Driver
Regulator
Touch Switch
I.C. Driver
Capacitor Multiplier
Audio Output
Relay Substitute
Oscillator
Servo-Amplifier
EMITTER
CASE STYLE TO-202
I.l
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.360-0.410
(9.144-10.414)
.125 REF.
Ir-jl=l-,~~~
0.128-0.132
(3.175)
(3.251-3.353)
0.480-0.520
(12.192-13.208)
0.285-0.315
(7.237-8.001)
0.065-0.075
(1.651-1.905)
'-r-r1rn-'....
1 21 REF
X 45"
":~;~~-':~~I,- '~"'~~~l
(2413-2 667)
0026
(0 660)
+l~
"'-0095-0105
(2413-2667)
~
0170-0190
(4318-4826)
0019-0026
~
~~;;;-
(0 483-0 660)
0095-0106
(2413-2667)
maximum ratings (TA
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @ TA = 25° C
@TC=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VESO
IC
ICM
Is
Po
D41K1,3
-30
-13
-30
D41K2.4
-50
-13
-50
-2
-3
.2
-1.67
-10
-2
-3
.2
-1.67
-10
TJ, TSTG
-55 to +150
-55 to +150
°C
RBJA
ROJC
75
12.5
75
12.5
°C/W
°C/W
TL
260
260
°C
UNITS
Volts
Volts
Volts
A
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Pulse Test: Pulse Width
=300ms. Duty Cycle:::; 2%.
393
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
VCEO
-30
-SO
-
-
Volts
Collector Cut-off Current
(VCE = Rated VCES)
ICES
-
pA
lEBO
-
-
-.S
Emitter Cutoff Current
(VEB = -13V)
-0.1 .
pA
hFE
10K
D41K1,2
D41K3,4
hFE
1K
1K
D41K1,2
D41K3,4
VCE(sat)
D41K1,2
D41K3,4
VBE(sat)
CHARACTERISTIC
off characteristics(1)
Collector-Emitter Voltage
Ic = 10mA)
D41K1,3
D41K2,4
on characteristics
DC Current Gain
(Ic = -200mA, VCE = -SV)
(Ic = -1.SA, VCE = -SV)
(Ic = -1A, VCE = -SV)
Collector-Emitter Saturation Voltage
(Ic = -1.SA, IB = -3mA)
(Ic= -1.0A, 1B = -2mA)
Base-Emitter Saturation Voltage
(Ic = -1.SA, IB = -3mA)
(IC = -1A, IB = -2mA)
-
-
-
-
1.S
1.S
Volts
V
-_.
-
2.S
2.S
Volts
CCBO
-
9
15
pF
fT
-
100
-
MHz
-
-
-
-
dynamic characteristics
Collector Capacitance
(VCE = -10V, f = 1MHz)
Current-Gain - Bandwidth Product
(IC = -20mA, VCE = -SV)
(1) Pulse test: PW S; 300ms Duty Cycle S; 2%.
800
000
041K
--
i
2
1\
'PI
10K
,
0
T.- 2S·C
1\
,
0
-.04
/
Ie I 11-1500
T,.ZS·C
2
\
-.02
f-
'l
Yell.ATI
2K
-.01
l-
1III041K
I
Vel '!V
0
~
/
VII IIIIT I
200
'0
II
I II
-t
-.I
-.2
-,4
Ie COLL.ECTOR CURRENT (AMPS)
-2
\
.1
-.01
-.02
-.04
-J
-.2
-.4
Ie "COLLECTOR CURRENT CAMPS)
FIG. 2 TYPICAL CCBO
I-.... .........
I•
euo
1-1"-
041K
•
e
fIIn
f.IMHr
!
-2
-4
FIG. 1 TYPICAL hFE VS. IC
20
-I
..
·e
•
-10
-20
Vel COLLECTOIit-IASE VOLTAGE
-40-10
-VO~TS
FIG. 3 TYPICAL SATURATION VOLTAGE
394
VS.
VOLTAGE
-4
HIGH VOLTAGE VIDEO OUTPUT
D40V Series
NPN POWER TRANSISTORS
The D40V is an encapsulated power transistor for TV video
and color output stages. Other TV and general applications
include: (1) Drive for the TV horizontal output transistor; (2)
Audio output stage for portable TV sets; (3) High voltage
transistor regulator; (4) Video display drivers for oscilloscopes, electroluminescent displays and calculators; and,
(5) High voltage general usage.
250-300 VOLTS
.1 AMP, 9 WATTS
NPN
COLLECTOR
EMITTER
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features:
• Low CCB (2.0 pF typical at VCB = 20V)
• Excellent linearity
0.480-0.520
(12.192-13.208)
0.065-0.075
(1.651-1.905)
0.285-0.315
(7.237-8.001)
1.21 REF.
(30.734)
'-r-n--n-'roI
0.405-0.425
(10.287-10.795)
~~~~ ~
~0.095-o;-;-;;;;--.105
~I11_
(2.413-2.667)..j
0.095-0.105
0.026
(0.660)
~
maximum ratings (TA
~
(2.413-2.667)
I
0.095-0.106
(2.413-2.667)
l
0.170-0.190
(4.318-4.826)
0 019-0 026
.
.
(0.483-0.660)
~
=25° C) (unless otherwise_. specified)
D40V1,2
250
300
D40V3,4
300
350
5
.1
5
.1
PD
.1
9
1.7
.1
9
1.7
5
.1
.1
9
1.7
TJ, TSTG
-55 to +150
-55 to +150
-55 to +150
°C
Thermal Resistance, Junction to Ambient
ROJA
73.5
73.5
73.5
°CIW
Thermal Resistance, Junction to Case
ROJC
13.9
13.9
13.9
°CIW
TL
260
260
260
°C
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current - Continuous
Total Power Dissipation @ T A = 25° C
@TC=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VESO
Ic
Is
D40V5,6
350
400
UNITS
Volts
Volts
Volts
A
A
Watts
thermal characteristics
Maximum Lead Temperature for Soldering
Purpose: W' from CaSe for 5 Seconds
395
electrical characteristics (Tc
I
=25° C) (unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
250
300
350
-
-
Volts
-
-
off characteristics(1)
Collector-Emitter Voltage
(lc =5mA)
D40V1,2
D40V3,4
D40V5,6
VCEO
Collector Cutoff Current
(VCE =300V)
(VCE =350V)
(VCE =400V)
D40V1,2
D40V3,4
D40V5,6
ICES
-
-
10
10
10
p.A
p.A
p.A
IEeO
-
-
10
p.A
Emitter Cutoff Current
(VEe =5V)
second breakdown
I
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE6
on characteristics(1)
DC Current Gain
(IC =5mA, VCE =10V)
(Ic =20mA, VCE =10V)
(Ic =40mA, VCE =10V)
(lc =5mA, VCE =10V)
(Ic =20mA, VCE =10V)
(Ic =40mA, VCE =10V)
D40V1,3,5
D40V2,4,6.
-
-
-
-
-
1.0
V
Cce
-
2
3
pF
fT
50
-
-
MHz
hFE
Collector-Emitter Saturation Voltage
(IC =20mA, Ie =2mA) ,
20
30
20
30
60
30
180
-
hFE
VCE(sat)
90
-
dynamic characteristics
Collector Capacitance
(VCB =10V, f =1 MHz)
Current Gain Bandwidth Product
(IC =100mA, VCE =10V, ftest =1.0 MHz)
(1) Pulse Test: Pulse Width - 300,",s Duty Cycle:5 2%.
100
80
en 60
Q
:
:f
8
a:I
.
~
-
o
40 ~ CEIl Ic'O)
~
z
.....
f=I MHz
~
Q.
1&1
z
i!
U
~
10
f
8
6
~
4
c(
o
ti
.,~
I~~
4
~
4
6 8 10
r- .....
20
.... r--
40 60 80100
REVERSE BIAS VOLTAGE -
FIG. 1
~
.8
.6
.4
I-
.2
I&J
~
2
I
!Z
I'-..
I
~
:r
I-
ecB(IE"O)
VOLTS
-
200
CI·
It:
~
400
1000
JUNCTION
TO TAB
i""'"
2
It:
I&J
io"'
....
CI
:E
2
1.0
40
10
8
6
1&1
U
JUNCTION TO AMBIE~~
20
o
20
100
80
60
/
"
~
'\0""6
10-5
10-4
10-3
10-2
10- 1
10
100
TIME - SECONDS
JUNCTION CAPACITANCE VS. REVERSE
BIAS VOLTAGE
FIG.2
396
MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
80
60
40
Ul
10
/
~
20
..J
VCE
10
8
6
4
:::!
~
I
Z
I
I
I
.8
.6
.4
u
II:
0
I-
u
T~ = 150
.2
UJ
..J
..J
:g~
I
I
cI
T~ =25°C/
T~
~
2
I
I
=-55°C
~
!5
IC(
Ul
I
I
.1
FIG. 3
/
.9
200
100
25°C
80
60
_55°C
i'\.
OJ
100
BO
Ul
D.
~
C(
:::i
"~
~
Ic/la
.~
~'
=10
I
I-
\.
r - - MAX DC
CURRENT LIMIT
M~X JOWE~
DC
40
~ I\.
20
UJ
II:
II:
~
a
10
25
Ild..J
6
DISSTTlO,
FORWARD BIAS OPE~ATlO~
Tc ~ 25°C
J
~
""
~
~~""
!!\
I)
VCEO MAX D40VI.2"-+i
VCEO MAX D40V3,4----t4
4
o
VCEO MAX D40V5,6
U
2
I
10
20
40
60
80 100
200
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG. 6
TYPICAL hFE VS. Ie
397
!
I 1"1
I I !
Jl
60 80100
~
'\
8
..J
I
60 1\0 100
TYPICAL SATURATION VOLTAGES
60
Z
\
40
4
6
8 10
20
IC - COLLECTOR CURRENT - MILLIAMPS
4
6
8 10
20
40
Ic - COLLECTOR CURRENT - MILLIAMPS
:i
~
\
FIG. 5
-
7'
... --- --
..J
i""'o..
20
2
FIG. 4
I
VCE = 10V
~
...
.r= 40
-- I--
I
/
~
.-
VCE
.01 1
1.0
J
15J C
2
T
.OB
.06
.04
TYPICAL TRANCONDUCTANCE
CHARACTERISTICS
O
V
r--
I
.02
I
.3
.4
.5
.6
.7
.8
vaE - BASE TO EMITTER VOLTAGE - VOLTS
.2
.1
---- ._ J_
I
I
.2
I
.02
.4
o
>
z
o
250C
-- - ... A-
-
.6
~
11
VaE
.8
UJ
III
I
/
I
.04
Jl
0
J
o
>
L
=150°C
TJ
---T
Ul
I
/
I
.1
8I
/
I
2
:::>
I
/
=10V
IUJ
II:
II:
I
/
D.
:!
8
6
4 I--- -
/
I II
SAFE REGION OF OPERATION
400
398
D42C Series
NPN POWER TRANSISTORS
30-80 VOLTS
3 AMP, 12.5 WATTS
COMPLEMENTARY TO THE D43C SERIES
The General Electric D42C is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-202
Features:
•
•
•
•
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
High free-air power dissipation
NPN complement to D43C PNP
Low collector saturation voltage (0.5V typo @ 3.0A Ie)
Excellent linearity
0.480-0.520
(12.192-13.2081
• Fast Switching
0.285-0.315
(7.237-8.0011
0.065-0.075
(1.651-1.9051
x 45°
121
REF
(30.7341
0.405-0.425
(10.287-10.7951
CHAMFER~
-rT
~
1
2
3
(1 2701
0095-0105
(2413-26671
~II.
+I
1-0.095-0.105
0026
(0.6601
~
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@TC=25°C
Operating and Storage Junction
Temperature Range
~
(2.413-2.6671
0095-0106
(2413-26671
maximum ratings (T A = 25 0 C)
l
~
0170-0190
"""(4";;;318;"::-4"".82;;'-61
0019-0026
~~;;,-
(0.483-0.6601
(unless otherwise specified)
UNITS
Volts
Volts
Volts
A
SYMBOL
D42C1, 2, 3
D42C4, 5, 6
D42C7, 8, 9
D42C10, 11, 12
VCEO
30
40
60
70
5
3
5
45
55
5
3
5
2
2.1
12.5
2
2.1
12.5
2
2.1
12.5
80
90
5
3
5
2
2_1
12.5
T J,Tstg
-55 to +150
-55 to +150
-55 to +150
-55 to +150
°C
ROJA
ROJC
60
10
60
10
60
10
60
10
°C/W
°C/W
TL
+260
+260
+260
+260
°C
VCES
VEBO
Ic
ICM
IB
Po
5
3
5
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle:5 2%_
399
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
VCEO(sus)
30
45
60
80
-
-
Volts
ICES
-
-
10
pA
100
pA
off characteristics(1)
Collector-Emitter Sustaining Voltage
D42C1, 2, 3
D42C4, 5,6
D42C7, 8, 9
D42C10, 11, 12
(IC = 100mA)
Collector Cutoff Current
(VCE = Rated VCES)
Emitter Cutoff Current
(VEB = 5V)
lEBO
second breakdown
ISecond Breakdown with Base Forward Biased
SEE FIGURES 3 & 4
FBSOA
on characteristics(1)
DC Current Gain
(IC = 200mA, VCE = W)
D42C1,
D42C2,
D42C3,
D42C1,
D42C2,
D42C3,
(Ic = 1A, VCE = 1V)
(Ic = 2A, VCE = 1V)
Collector-Emitter Saturation Voltage
(Ic = 1A, IB = 50mA)
(Ic = 1A, Is = 100mA)
4,
5,
6,
4,
5,
6,
7,10
8, 11
9, 12
7, 10
8, 11
9, 12
D42C2, 5, 8, 11
D42C3, 6, 9, 12
D42C1, 4, 7, 10
Base-Emitter Saturation Voltage
(Ic = 1A, Is = 100mA)
-
-
-
-
25
100
40
10
20
20
-
0.5
0.5
0.5
Volts
VSE(sat)
-
1.3
Volts
CCSO
-
-
100
pF
fT
-
50
-
MHz
-
100
-
nS
-
500
-
hFE
hFE
VCE(sat)
VCE(satl
220
120
Volts
dynamic characteristics
Collector Capacitance
(VCB =10V, f =1MHz)
Current-Gain - Bandwidth Product
(Ic = 20mA, VCE =4V)
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
Ic = 1A, IS1 = IS2 = 0.1A,
td + tr
VCC = 30V, tp = 25 ,",sec
ts
Fall Time
tf
(1) Pulse Test PW = 300ms Duty Cycle:5 2%.
400
75
1.6
-
1.4
100
- JCE ' I VOLTk
---
80
60
40
-I---
- - VeE" 2.5 VOLTS-
I
I
-
....... ~
......... ......
0
~,
" "'"',
1' ......
I
8
....
......
-- --
~
-
TJ -25·C
---~
.. -
~
\\
~ :...
'\
~,
i"Y"
"\. \\
o6
20
o
,01
i'...,~,
--
0,4
1,0
0.1
Ie - COLLECTOR CURRENT - AMPERES
0.2
FIG. 1
·2.5 VOLTS
~,
2
TJ s 25-C
;
YCE-'YOLT
- - vCE
I
TJ-I!!IO·C
TYPICAL hFE VS. Ie
"- [':~
TJ - -55-C
F~
~
~
...
i'
o
10
01
·01
.:Ie - COLLECTOR CURRENT - AMPERES
FIG.2
=
1-
~r:::::~~::::=+::~::~~::~::~~~~~==~=r.~
r
FORWARD BIASED OPERATION
6
~PEA~K~C~O:LL~E~C~TOSR~C~U~R~R~E~NT~-~t~_-t_-_+~-_-_--=
~~
rMAXDC
t-C:::U;::'R':'::R~E:'::NT~L~'M~';';T"""""""""'''''''
.... ~~
ffl
ffi
...
.......... C"': ~
DUTY CYCLE S 50%
TCS70'C
1
I
J,-,_
,6t------~r_----_t--_+--~_r,,~~~~~~~~~4r--t+~t+11
a ,41-----t----t--1--+--t--/':2--...~""~~~~:__+1
+-++
!+-I
~
~~ I
I
MAX DC CURRENT LlMIT/
II:
~
9
,04f---+---f
.02
I
.4
II:
...a
.2
..J
..J
.1
.08
.06
0
w
0
~
9
:
--+----~r_~~+H
I------~------_I :~:: :::: :::~:~~~:, -12~i'-=~-=~-=-=-~+~~-=t11A~'~tHl
"
"y
\
/ ' .........
/"
/'
/'~
.02
8
1
"1
be'\.
/1- ,\
1
!\ I
I~ N ~
~
~
D42Cl, 2, 3
D42C4, 5, 6
D42C7, 8, 9
D42Cl0, 11. 12
8
:
./
I
I I I
.01
1
I
1
<;,
VCES MAX
Vces MAX
Vces MAX
Vces MAX
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG.3
......
/'~M
~
I
.04
.0117-----~~----~--~--~B~1~0----~2~0------~40~-~i~~~8~~Ljl00·
....... 1'....................
.............
MAX. DC POWER DISSIPATION
/'
1 MSEC PULSES ~
50 MSEC PULSes
10~ SEC PULSES
10~ SEC PULSES'
1~ SEC PULSES'
a
I
8~ '0'18~====~======~~::~~~;;~;;;;~~~~\I~fl~1
VCES MAX. D42C4, 5, 6
II:
II:
w
VCES MAX. D42Cl, 2, 3
t------~-------t
1
.8
.6
CURRENT LIMIT
::J
,2t------~r_----_t--_+--~_r------+_----~~~\"~~;~~1
.06
'"
...::;
...'!'z
W
II:
W
l00~SECPULSES
:l!
.... 1'-., I""'
~ .~~::::~~:::::t::=+::~~~~~~~::~c:~~~~
~
FORWARD BIASED OPERATION _
SINGLE PULSE TC < 25"C
_T
PEAK COLLECTOR CURRENT
MAX DC
10~SECPULSES
I .,,---- 1 MSEC PULSES
Z ~OMSECPULSES
~t---
10
B
6 -
TYPICAL NORMALIZED hFE VS. Ie
~
\!
.\1
10
20
40
80
80 100
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG.4 SAFE REGION OF OPERATION
SAFE REGION OF OPERATION
-+-
10~--'---------"----.----r--r-,,----.----r--r-,,
I-I-14
!:;
gl.O
~
I
Z
...'"..
iii
Of
o
-
8
..
!:i
9
0
OJ
..
>
..
..,.
u
6
z
0
c
;::
x
...
0:
~
..'"
0:
'"~
,
......
..,
'"
:i!
10
~
2
H----t----+_+-++---+---Ir--t-t-I
H----t----+-t-++---+--~r--t-t-I
.,
III
!o
TJ • !SO'C
T • 2l5'C
J
I
I
i
FORWARD BIASED OPERATION
12
...
_1_
4
VCE(SATI'
~o.I
IctrB'2~~V~' f"
~
>u
10
30
40
50
90
100
veE- COLLECTOR TO EMITTER VOLTAGE - VOLT S
.01L-__-'--__----'_.l-.LJ1_ _ _...L__- - '__.l-.l-L-__-'--__- - '__
FIG.S
MAXIMUM PERMISSIBLE DC
POWER DISSIPATION
.01
.02
.04 .08.00.0.1
XC-
FIG. 6
401
.l-~
1.0
COLLECTOR CURRENT- AMPERES
TYPICAL SATURATION VOLTAGE
CHARACTERISTICS
10
100
~
I:
~
V
z
10
~
VeE-' VOLT
II!
1.0
o>~
.
JUNCTION TO CASE -
~
,
WITH TAB
""",~CTI~N TO AMJIENT'
W
0
2
WITHOlfTAB
0.8
TJ • 2S·C
V
~
II:
/
W
j!:
ffiiii
-
~
.L'
.1
lit'
10'"2
lit'
10"'
. 10
10'
10'
~Ol
.04 .06.08 0.1
.02
10
1.0
I B - BASE CURRENT .. mA
~
~
~
I
// / V / /
r--- ~g~~~:~~[TS
35
1
I
.'" ....
2
8~
1.5
9
1
15IL 1000
-
V
o
0.2
0.4
V
~
/
V
O.B
I
/
a:
il
i::
J
1.0
100
i
TJ --55'
J
/
...
::&
I
I
1/
/
0.5
o
J
~
il
1.2
.J IC~T~'FlCATll
,,~
/TJd3t 25'C ,
I
II:
TYPICAL INPUT CHARACTERISTICS
10.000
/1 1/ Ij
I if /1
J II
TJ-l50'C!
3
0~ 2.5
g
FIG.8
MAXIMUM .TRANSIENT THERMAL IMPEDANCE
I
4.5
1-1--'
1-1-'"
V
c,.-;
TIME - SECONDS
FIG. 7
l-
VCE-l0V
Ic-200mA
V
10-'
L.,..I--
1.-1-- I---
TJ'~ ~I--'
/
~
I--
TJ."SS-C
./
;!
...J
--f..-
i,....- ~I-- I-"""
1.4
10
'""
ISO
VBE - BASE TO EMITTER VOLTAGE - VOLTS
....
""
" ,
,
125
VOLTAGE
--ICEOAT a..ASSIFICATION VOLTAGE
'"'"
,,
'~ i',.,
eo
100
25
TEMPERATURE _·C
FIG. 9
TYPICAL TRANSCONDUCTANCE CHARACTERISTICS
402
FIG. 10
TYPICAL ICEO, ICES VS. TEMPERATURE
100
D43C Series
PNP POWER TRANSISTORS
-30 - -80 VOLTS
-3 AMP, 12.5 WATTS
COMPLEMENTARY TO THE D42C SERIES
The General Electric D43C is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
PNP
COLLECTOR
EMITTER
CASE STYLE TO-202
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High free-air power dissipation
• PNP complement to D42C NPN
• Low collector saturation voltage (0.5V typo @ 3.0A Ie)
0.48(1.0.520
(12.192-13.208)
• Excellent linearity
• Fast Switching
l
0.065-0.075
(1.651-1.905)
X 45°
0.285-0.315
(7.237-8.001 )
CHAMFER~
1.21 REF.
(30.734)
1
0.405-0.425
110.287-10.795)
2
3
0.095-0.105
I
12.413-2.667) +11:1---0.095-0.,05
0.026
(2.413-2.667)
10,660)
0.095-0.106
(2.413'2.667)
I"
f4-
maximum ratings (TA = 25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(l)
Base Current - Continuous
Total Power DiSSipation @ TA = 25°C
@TC=25°C
Operating and Storage Junction
Temperature Range
0.170-0.190
[14.318-4.8261
0.019-0.028
~
10.483-0.660)
I+-
(unless otherwise specified)
D43C10, 11, 12 UNITS
-80
Volts
-90
Volts
-5
Volts
A
-3
-5
-2
A
2.1
Watts
12.5
VCEO
VCES
VE80
Ic
ICM
18
PD
D43C1, 2, 3
-30
-40
-5
-3
-5
-2
2.1
12.5
D43C4, 5, 6
-45
-55
-5
D43C7, 8, 9
-60
-70
-5
-3
-3
-5
-2
2.1
12.5
-5
-2
2.1
12.5
TJ,Tstg
-55 to +150
-55 to +150
-55 to +150
-55 to +150
°C
R8JA
R8JC
60
10
60
10
60
10
60
10
°C/W
°C/W.
TL
+260
+260
+260
+260
°C
SYMBOL
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: V8" from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle :5 2%.
403
electrical characteristics (T c
I
=25° C)
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
-30
-45
-60
-80
-
-
Volts
off characteristics(1)
Collector-Emitter Sustaining Voltage
(IC
D43C1, 2, 3
D43C4, 5, 6
D43C7, 8, 9
D43C10, 11, 12
=100mA)
Collector Cutoff Current
(V CE = Rated VCES)
Emitter Cutoff Current
(VES = 5V)
VCEO(sus)
-
-
ICES
-
-
-10
/lA
IESO
-
-
-100
/lA
second breakdown
ISecond Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 3
on characteristics
DC Current Gain
(IC = -200mA, VeE = -1V)
(IC = -1A, VCE = -1V)
(Ic = -2A, VCE =-1V)
Collector-Emitter Saturation Voltage
(IC = -1A, Is = -50mA)
(IC = -1A, IS = -100mA)
Base-Emitter Saturation Voltage
(Ic = -1A, Is = -100mA)
'D43C1, 4, 7,10
D43C2, 5, 8, 11
D43C3, 6, 9, 12
hFE
D43C1, 4, 7,10
D43C2, 5, 8, 11
D43C3, 6, 9, 12
hFE
D43C2, 5, 8, 11
D43C3, 6, 9, 12
D43C1, 4, 7,10
VCE(sat)
25
40
40
10
20
20
-
-
-
120
120
-
-
-
-0.5
-0.5
-0.5
Volts
-1.3
Volts
-
VCE(sat)
-
VSE(sat)
-
-
CCSO
-
-
125
pF
fT
-
40
-
MHz
td + tr
-
50
-
nS
ts
tf
-
500
-
-
50
-
Volts
dynamic characteristics
Collector Capacitance
(VCS = -10V, f = 1MHz)
Current-Gain - Bandwidth Product
(IC = -20mA, VCE = -4V)
switching characteristics
Resistive Load
Delay Time +
Rise Time
Ie = -1A, IS1 = IS2 = -0.1A
Storage Time
Fall Time
VCC = 30V, tp = 25 /-Lsec
(1) Pulse Test PW = 300ms Duty Cycle:5 2%.
404
10
•
-
~
-!- TJ '
ISO'C
_1_ TJ '
25'C
- - VeE· 2.S VOL.TS
TJ-ISOeC
4
I-I--
VCE-'VOI..T
.........
t-
I
~
~,
2
-
TJ - 2S·C
0
----
~
•
I--
..
cr
\\
J,......o ~
d
//
~
'.// V
/~ v~/
~t....
~V t.. .
.so..
..
VCEISATI' IC/IO'~
I-
~,~,
~
1-
~~ rf;.Y
~::::, ...
z
o
t= -Q I
~- i""~
I"""
Y:e (SAT) :Ic/:Ia'IO
O!
-=--= =~~t-
~
'" .......
~ to,
I'
0
~- ( - -
....':'
-.-
"'E(SAT) : Ic/la' 1,\
-I .0
• 44C2.3.5",8
-1-0
~
0
.~
.02
.01
.01 .08 OJ
Ie - COLLECTON
FIG. 1
10
1.0
CURRENT - AMPERES
TYPICAL hFE VS. Ie .
-.0I
.,oz
-.01
-D4.,0&.08-0.1
- LO
-
10
IC- COLLECTOR CURRENT-AMPERES
FIG.2
-8
MAX DC CURRENT LlMIT~
-4
ffi
........
a:
-2
I-
-.8 I--.6
~
..
ffi
-1
a:
a:
::>
u
-.4
IX
~
-.2
9
-.04
I--
MAX. DC POWER DISSIPATION AT
70'CCAse
:-----
~ I:::,.. 1/
~ t::: ~
y
~~
~
I
"~ ~I
(~I
~
FORWARD BIASED OPERATION
DUTY CYCLE,; 50%
TC';70'C
I
1
1
"'~
1
./'
VCES MAX. D44Cl. 2. 3
o -.08
u -.06
,.-
VCES MAX. D44C7,8, 9
I
VCES MAX. D44Cl0, 11. 12
i
-4
-2
-6
-8 -10
-20
t"
I
-40
/
....... 'N
/j
-.01
-1
!
~~:r
VCES MAX. D44C4. 5. 6 --;---""
-.02
,
..........
~TION TO;MBIENT
11' SEC PULSES 's
.r-+-101' SEC PULSES
,-:--1001' SEC PULSES
v-1000I' SEC PULSES
I
I-
-
100
-t
PEAK COLLECTOR CURRENT
-6
%
~
L
~
:
lV.
10
-60 -80 -100
JUNCTION TO CASE
~
/
yg;:5~0~A
.
10
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG.3
TYPICAL SATURATION VOLTAGE
CHARACTERISTICS
.,
10
,
10
.,
10
1
I
10
10'
-
10'
TIME - SECONDS
SAFE REGION OF OPERATION
FIG. 4
409
MAXIMUM TRANSIENT THERMAL IMPEDANCE
410
D45C Series
PNP POWER TRANSISTORS
-30 - -80 VOLTS
-4 AMP, 30 WATTS
COMPLEMENTARY TO THE D44C SERIES
The General Electric D45C is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
PNP
COLLECTOR
~'-EQ
EMITTER
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features:
•
•
•
•
.~~g\!.~~\~
.OSS(1.39}
.
.
1
.04811.~2}
PNP complement to D44C NPN
Very Low collector saturation voltage (-0.5Vtyp. @-3.0AIe)
Excellent linearity
Fast Switching
.--.
.26516.731
.24516.221
<---+--+----,1-r
/
:~:m:~~:DIA.
+
rt
.35519.021
/
.32518.251
---::IS91
~.31
TERM.l
CASE
TEMPERATURE
REFERENCE
_
POINT
--L
.00610. lSI
.00110.0251
.SOOI12.7IMIN.
TERM.2
.05511.39
.04511.14
TERM.3
.0331~.841
.02710.691
.OSS!1.391---j
.04511.141
maximum ratings (TA = 25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @ TA =25°C
@Tc =25°C
Operating and Storage Junction
Temperature Range
.10712.721
.08712.211
.!lbJ-.lOSI2.671
~ _.09512.411
J:=
.210IS.33}
.19014.821
.02110.531
.01510.381
(unless otherwise specified)
SYMBOL
D45C10, 11, 12 UNITS
-80
Volts
-90
Volts
-5
Volts
-4
A
-6
2
A
Watts
1.67
30
VCEO
VCES
VESO
Ic
ICM
Is
Po
D45C1, 2, 3
-30
-40
-5
-4
-6
2
1.67
30
D45C4, 5, 6
-45
-55
-5
-4
-6
2
1.67
30
D45C7, 8, 9
-60
-70
-5
-4
-6
2
1.67
30
TJ,Tstg
-55 to +150
-55 to +150
-55 to +150
-55 to +150
°C
ROJA
ROJC
75
4.2
75
4.2
75
4.2
75
4.2
°C/W
°C/W
h
+260
+260
+260
+260
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
(1) Pulse Test Pulse Width
=300ms Duty Cycle:5 2%.
411
electrical characteristics (T c
I
=25° C)
(unless otherwise specified)
I SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNIT
-30
-45
-60
-80
-
-
Volts
-10
IJA
-100
IJA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic
D45C1, 2, 3
D45C4, 5, 6
D45C7, 8, 9
D45C10, 11, 12
=-100mA)
Collector Cutoff Current
(VCE =Rated VCES)
Emitter Cutoff Current
(VES =5V)
VCEO(sus)
ICES
-
IESO
-
-
-
second breakdown
ISecond Breakdown with Base Forward Biased
SEE FIGURE3
FBSOA
on characteristics(1)
DC Current Gain
(IC =-0.2A, VCE
(Ic
(Ic
-
-
-
-
-
20
-
-
-
-0.5
-0.5
-0.5
Volts
-
-
VSE(sat)
-
-
-1.3
Volts
Ccso
-
-
125
pF
fT
-
40
-
MHz
=-1A, IS1 =IS2 =-0.1A,
td + tr
-
50
-
nS
=-1A, tp =25 }.Lsec
ts
-
500
-
D45C1, 4, 7,10
D45C2, 5, 8, 11
D45C3, 6, 9, 12
hFE
=-1A, VCE =-1V)
D45C1, 4,7,10
D45C2, 5, 8, 11
hFE
=-2A, VCE =-1V)
D45C3, 6, 9,12
hFE
D45C2, 5, 8, 11
D45C3, 6, 9, 12
D43C1, 4,7,10
VCE(sat)
=-1V)
Collector-Emitter Saturation Voltage
(Ic =-1A, Is =-50mA)
(Ic
=-1A, Is =-100mA)
Base-Emitter Saturation Voltage
(Ic =-1A, Is =-100mA)
25
40
40
10
20
-
-
120
120
dynamic characteristics
Collector Capacitance
(VCS =-10V, f = 1MHz)
Current-Gain - Bandwidth Product
(IC = -20mA, VCE =-4V)
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
Fall Time
Ic
Vec
tf
(1) Pulse Test PW = 300ms Duty Cycle:S 2%.
412
50
-I0
~- TJ "150"C
I-- - -
100
-JC[ ... t.o. T
TJ -25-C
ao
,+
- - VCE--2..5 VOLTS
-~ .......
D45C2,3.5,6.8,9,11.12
""",
'\
~
i - - -1-
i-
o
~
.....
'\.
'\
"Elur) : :l:c/:ts" I~
-I.0
1"-1-,
'"
~
"
o
>
z
o
~
a
t:
-0.I
ill
--
I-
~
- .02
-
~
-.06.01
- -O. I
-10
-1.0
Ie-COLLECTOR CURRENT- AWPERES
-- "'=
"-
~E(s.vi::Ia~
..J
r\.
~.01
T,J ·2'·C
I,.....-
...
.~ ~
:;...-
I.-
./ I / / l '
V/ [/",
.-"
V~~V/~I""
~~/
k::-:~:::I '
- .....'""'- ....
~-
~r-
"'hlSAT):Zc/l:S"10
TYPICAL hFE VS. Ie
FIG. 1
-.0I
-.01
-.oz
_ _-0.1
-
- LO
10
IC- COLLECTOR CURRENT-AMPERES
FIG.2 TYPICAL SATURATION VOLTAGE
CHARACTERISTICS
t
-8
PEAK COLLECTOR CURRENT
-6
MAX DC CURRENT LlMIT-""";::
-4
en
w
a:
w
"::;
«
-, -
,:.
-.8
a:
a:
-.4
zw
::>
.........
-2
-.6
0
I-
-.2 -
U
w
:::l
-.1
-.08
U
-.06
9
-.04
0
~
III SEC PULSES S
. r -1--1011 SEC PULSES
~ ~ ~ 1/-'000"
~/
~~
T ............. '
I~TIONT01MBIENT
,--'00/1 SEC PULSES
SEC PULSES
~
'"'"'"~
'\..'\..~
I
u
a:
MAX. DC POWER DISSIPATION AT
70"CCASE
~~ ,/
100
~
I
FORWARD BIASED OPERATION
DUTY CYCLE S 50%
TCS70"C
: I
~I
~('ft.,
I
I
I
. / !~~,-
I
VCES MAX. D45Cl, 2, 3
VCES MAX. D45C4, 5, 6
-7---'
./
1
U..• 'i
I
%1
VCES MAX. D45Cl0, 11, 12
I
-.01
-1
-4
-2
-6
-8 -10
'7
Cl
~
~
~
..J
~
w
1
-20
-40
I :
Z
W
j
~
10-'
-60 -80 -100
SAFE REGION OF OPERATION
~;~~O~A
I
I
/
,V
10
~
'O~
.,
10
10
10'
TIME - SECONDS
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG. 3
JUNCTION TO CASE
/
a:
j!:
....
I-
VCES MAX. D45C7, 8, 9
-.02
l/
10
z
FIG. 4 MAXIMUM TRANSIENT THERMAL IMPEDANCE
413
414
VERY HIGH GAIN
0440 Series
NPN POWER DARLINGTON
TRANSISTORS
40-80 VOLTS
6 AMP, 30 WATTS
COMPLEMENTARY TO THE 0450 SERIES
The General Electric 0440 is a Darlington power transistor. It
is designed for general purpose switching of mUlti-ampere
loads directly from low level logic circuitry. A monolithic bias
resistor is included for elevated temperature stability and
bypass diode for reduced dissipation under negative transient conditions.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-220AB
Applications:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:~~g\!·~~\rt
.05511.391
.
1
.04811.221
• Solenoid Driver
-.----
• Lamp Driver
.26516.731
.24516.221
• Relay Substitute
'-----+--I------ltt--
.-
/
• Switchingl Regulator
+
:~:m:~::DIA.
.
•
.35519.021
.32518.251
~
I
• Inverter/Converter
~.31
TERM.l
-If ;'~IIII4i-i--,
CASE
TEMPERATURE
REFERENCE
S
OINT
.22015.591
~151
.001(0.0251
.500112.7IMIN.
TERM.2
TERM.3
.0331~.841
.02710.691
.05511.391-/
.04511.141
maximum ratings (TA = 25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
.10712.721
.08712.211
.lhJ+-.l0512.671
~ ".09512.41 1
1+-'
I--
.21015.331
.19014.821
.02110.531
.01510.381
(unless otherwise specified)
SYMBOL
VCEO
VCES
VESO
Ic
Is
Po
04401,2
04403,4
04405,6
40
50
5
6
.5
2.1
30
60
70
5
6
.5
2.1
30
80
90
5
6
.5
2.1
30
TJ, TSTG
-55 to +150
-55 to +150
-55 to +150
°C
ROJA
ROJC
60
4.2
60
4.2
60
4.2
°CIW
°CIW
h
260
260
260
°C
UNITS
Volts
Volts
Volts
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
415
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
I· SYMBOL I
CHARACTERISTIC
MIN
TYP
. MAX
UNIT
40
60
80
-
-
Volts
-
off characteristics(l)
Collector-Emitter Breakdown Voltage
Ic = SOmA)
04401,2
04403,4
0440S,6
Collector Cut-off Current
(VCE = Rated VCES)
(VCE = Rated VCES, VSE = O.4V)
VCEO(SR)
Tc = 2SoC
Tc = 12SoC
Emitter Cutoff Current
(VES = SV)
-
ICES
ICEV
-
-
10
S
p.A
-
IESO
-
-
10
J1A
-
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURES
FBSOA
on characteristics
OC Current Gain
(Ic = 1A, VCE = 2V)
Collector-Emitter Saturation Voltage
(Ic = 3A, Is = 3mA)
(Ic = SA, 1s = SmA)
-
-
-
-
1.S
1.S
V
V
VSE(sat)
-
-
2.S
Volts
-
O.S
-
p.S
1.2
-
0.8
-
-
VCE(sat)
04402,4,6 only
Base-Emitter Saturation Voltage
(Ic = SA, Is = SmA)
S,OOO
2,000
hFE
dynamic characteristics
Collector Capacitance
(VCE = 10V, f = 1MHz)
switching characteristics
Resistive Load
Oelay Time + Rise Time
Ic = 3A, IS1 = IS2 = 3mA
td + tr
Storage Time
VCC = 40V, tp = 2S p'sec
ts
Fall Time
tf
(1) Pulse Test PW:5 300ms Duty Cycle :5 2%.
100
100
JUNCTION TO AMBIENT
~
1.00"'"
~
i.-'~
°IIII
i!§
10
III
IL
~
It"'"
"
"
j
JUNCTION TO CASE
j
u
VCE = IOV
Z
Xc=
.I
C
D:
.'I
0.10- 5
SOOmA
U
I
10- 4
10 3
10-2
10- 1
I
TIME - SECONDS
0.0I
o
10
=-ssoc
~
"
"'""
VCE :IOV
I
I
I
.1
'TJ
1
I
I
~
= 2s o cI
I
I
5 o. I
III1
I
I
j
III
..J
Z
I"
/
~
I
A
I
a:
:x
...
Z
....
a:
:>
u
iij
TJ
II
j
i.;o"" 17
,
I
a:
III
= ISoocl
.....
III
......
TJ
10
2i
l..-~
:I:
D:
I
J
UJ
~--1.0
'"4
0.8
0
0.6
I...J
>
z
0
~
4
~
~
-- .-
----- f-- ~-
~~
Fo""
..,
.
J.- --tl
""
/
V
.<::
VeE
0.4
1,000
:::>
~
0.2
0.4
0.6 0.8 I
2
Ie - COLLECTOR CURRENT - AMPS
4
6
100
.01
8 10
10
8 MAX DC CURRENT LIMIT
6
4
MAX DC POWER
DISSIPATION
2
AT 25°C CASEI
~
II:
II:
G
1.0
.B
it'
""'"
.4
.2
~ .10
FORWARD BIAS OPERATION
Tc S 25°C
5
.08
u .06
I
.!t
./
'\c'
~
,
\
;'
I
.02
.04 .06.08.1
.2
.4 .6.8 I
2
Ie - COLLECTOR CURRENT - AMPS
"
TYPICAL hFE VS. Ie
.5'_6\
<".
"~;o,
1
'"
E
r'\
~r~ .. L~",
:I!'1!-
2..;1 O
o21-- oOto
"'I "'~I"'~I
.02
~I ~oi~Oi
-2
-4
-6 -8 -10
-20
-40 -60 -80-100
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG.5
V'
./
~
0,-'-
.04
.01_1
t\.
f"
);,.~o
II:
~
~r:-/
.........
}j~
FIG.4
.6
u
. /~
~~.
FIG. 3
TYPICAL SATURATION VOLTAGE CHARACTERISTICS
I-
~~
./
0.2
0.1
0.1
1.'!.Y
/:)-
./
lell8 = 1000
4
...-
':Jor:- . /
./
II:
'"
I.~
./
~~
10,000
--r-.,- ~
I-
= 2V
veE
SAFE REGION OF OPERATION
417
4
6 810
418
VERY HIGH GAIN
0450 Series
PNP POWER DARLINGTON
TRANSISTORS
-40 - (-80) VOLTS
-6 AMP, 30 WATTS
COMPLEMENTARY TO THE 0440 SERIES
The General ElectricD45D is a Darlington power transistor. It
is designed for general purpose switching of multi-ampere
loads directly from low level logic circuitry. A monolithic bias
resistor is included for elevated. temperature stability and
bypass diode for reduced dissipation under reverse transient
conditions.
PNP
COLLECTOR
EMITTER
CASE STYLE TO-220AB
Applications:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Solenoid Driver
::~g\::~;:ft
.055(1.39)
1
.04811.22)
.....--
• Lamp Driver
• Relay Substitute
.26516.73)
.2.4516.22)
''---j--i---~'t•
/
• Switching Regulator
:::~II~:~~))DIA.
+
• Inverter/Converter
•
CASE
TEMPERATURE
REFERENCE
/ " POINT
:~~~\~:~~l---'
~59)
~
1
~.3
TERM.!
.
)
-rr jt~III"'h--,
.00610.15) .
.00110.025)
.500112.7)MIN.
TERM.2
TERM.3
.0331~.84)
.02710.69)
.1~.!0512.67)
.055(1.39)
.1
.04511.14)--"
maximum ratings (TA
.10712.72)
.087(2.21)
~ •.. 09512.41)
\+-' .210(5.33)
\+- .. 19014.82)
.021(0.53)
.01510.38)
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VESO
IC
Is
Po
045012
0450t.4
04505,6
-40
-50
-5
6
.5
2.1
30
-60
-70
-5
6
.5
2.1
30
-80
-90
-5
6
TJ, TSTG
-55 to +150
-55 to +150
-55 to +150
°C
ROJA
ROJC
60
4.2
60
4.2
60
4.2
°CIW
°CIW
TL
260
260
260
°C
.5
2.1
30
UNITS
Volts
Volts
Volts
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal ReSistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
419
electrical characteristics (Tc
I
=25° C) (unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
VCEO(8R)
-40
-60
-80
-
-
Volts
ICES
ICEV
-
-
-10
-5
J.LA
IE80
-
-
-10
p.A
off characteristics(1)
Collector-Emitter Breakdown Voltage
Ic =-50mA)
Collector Cut-off Current
(VCE =Rated VCES)
(VCE =Rated VCES, V8E
04501,2
04503,4
04505,6
TC =25°C
Tc = 125°C
=-0.4V)
Emitter Cutoff Current
(VE8 =-5V)
second breakdown
I
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 5
on characteristics
OC Current Gain
(Ic =':'1 A, VCE =-2V)
Collector-Emitter Saturation Voltage
(Ic =-3A, 18 = -3mA)
(IC =-5A, 18 =-5mA)
04502,4,6 only
Base-Emitter Saturation Voltage
(IC =-5A, 18 =-5mA)
-
hFE
2,000
5,000
VCE(sat)
-
-
';1.5
-2.0
V
V
VSE(Sat)
-
-
-2.5
Volts
td + tr
-
0.35
-
J.Ls
ts
-
0.4
-
~
dynamic characteristics
Collector Capacitance
(VCE =10V, f =1MHz)
switching characteristics
Resistive Load
Ic =-3A, IS1
Oelay Time + Rise Time
,
Storage Time
=IS2 =-3mA
'VCC =40V, tp =25 J.Lsec
Fall Time
tf
0.3
(1) Pulse Test: PW :5 300ms Duty Cycle :5 2%.
-100
100
.JUNCTION TO AMBIENT
~
.,..i"""
I
U
Z
~
10
IL
II'
!
..J
~"
C
2i
...:r:
II:
lI-
/
-40
...
CI
....
....
.JUNCTION TO CASE
VCE =10V
1:C=500IWA
)
.II
O. -5
10
-10
-s
I
-4
I-
Z
C
j
:iij
z
-2
cr
cr
~
o
cr
-I
-.S
III
III
10-2
10- 1
I
TIME - SECONDS
III
...J
...J
/
L
II
-. I
u
-
-.04
-.02
I
-.00
10
II
./
L L'
V
8 -.os
I
L
~V
/
/
I
-.4
TJ =150°<1 TJ= 25° ' i
~
o -.2
...iii
II:
L
VeE = -IOV
:IE -20
i.oo"'"
I
z
I-
CII
IL
o
...
...;§
-so
.
V~
1/ I
TJ =-55°C
I
~
1
1 11
II
L 1/
_.1 -.2 -.3 -.4 -.5 -.S -.7 -.8 -.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 -I.S -1.7 -I.B
VeE - BASE TO EMITTER VOLTAGE - VOLTS
FIG. 2
TYPICAL TRANSCONDUCTANCE CHARACTERISTICS
FIG. 1
MAXIMUM TRANSIENT THERMAL IMPEDANCE
420
-4.0
40,000
leIla = 1000
'"~
0
r----r- ____
>
I
IIJ
-1.0
-0.6
z
0
~
II:
L
1--- ~ ~:
....
:::!±:--f::;~
;2,000
VCE
-
TJ = 150·C--...........
TJ = 25·C
~
L::..
4,000
f'
V
1,000
BOO
600
"'-.- TJ = 25·C
- - TJ =150·C
:::l
~I
~I
"
~i
~I
:t-
<\II
~I
I
10
I
~I
....
°1
\
II
:
I
I
Tc =1oc
~
1
r--
I
I
1
I
I
I
1
I
1
20
30
40
50
60
VCE -COLLECTOR TO EMITTER VOLTAGE -VOLTS
,-
70
1
80
FIG.4 MAXIMUM PERMISSIBLE DC POWER DISSIPATION
425
10
~
1...-1"""
/"
~
/
1.0
L
I
~
IZ
1&.1
II:
II:
o. I
II:
~
I
/
I
I
:::)
u
I
I
8
I
I
I
2
0.0 I
II
PULSED MEASUREMENT
PULSE WIDTH:!5300us
DUTY CYCLE :!5; 2%
VCE=2V
I
I
1&.1
..J
~
I /
/ /
I
:E
C
I
./
v
-
~ --:::::i'
I
I
_I
I
I
TJ'~SOC
TJ =ISO·C
I
0.00 I
o
FIG.5
0.4
TJ =-40·C
I
I
o.e
1.2
1.6
2.0
VeE-BASE TO EMITTER VOLTAGE-VOLTS
2.4
TYPICAL TRANSCONDUCTANCE CHARACTERISTICS
I
I
20
1&.1
II:
1&.1
I : I
!
I
10m,PULSES
I-- Ims PULSES
r-... f-/OO,.us PULSES
I
I
wI
II ;I
~I
ta I
.... S;~=l==~
L ~ I- O
~[E
r=cC~O~LL~E~C~TOER~C~U~R~RE~N!T~~al~
OI-Or
I---MAX DC POWER
.
DISSIPATION ---
C/I
I
~~I--
MAXIMUM DC
10
I
PEAK COLLECTOR CURRENT
IL
...
..... .....
~"'"
"'.......
"' I\.
"'"'\
.\ "\1"'
:E
C
I
\\
IZ
1&.1
II:
II:
)( r-)( e)(
~0I~
L.~C
1 01
~r ~I- >1
I:
1\",1
\\ \
~I
I
:::)
U
II:
eu
1.0
1&.1
..J
..J
DUTY CYCLE ~SO%
TC .,; 2S·C
0
U
I
t - - - t -......'\~'\-t--;-;--!--;
\ \I
t\ I
E
\1\
O.l'--_ _"'--_ _.L.---J'---'--'-_ _-'--_ _
1.0
1\1
~
-'--_-'-...JL.~
10
V CE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG.6
SAFE REGION OF OPERATION
426
80
VERY HIGH GAIN
D45E Series
PNP POWER DARLINGTON
TRANSISTORS
-40 - (-80) VOLTS
-10 AMP, 50 WATTS
COMPLEMENTARY TO THE D44E SERIES
Applications:
PNP
•
•
•
•
•
•
•
•
•
•
Driver
Regulator
Capacitor Multiplier
Solenoid Driver
Inverter Power Supply
Switch
Audio Output
Relay Substitute
Oscillator
Servo-Amplifier
COLLECTOR
BASE
EMITTER
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
'19014'83)~
.17014.32)
:g~g :~~l
-J
-.--- -
.26516.73)
.24516.22)
/I--+-I----ff-+
:::m:~~IDIA.
.35519.02)
~'32518'25)
_
CASE
TEMPERATURE
REFERENCE
OINT
S
~591
.00610.15)
.001(0.025)
~.3)
TERM.l
TERM.2
.500112.7)MIN.
TERM.3
.0331~.B4)
.02710.69)
_)
.055(1.39)
.04511.14)--"
maximum ratings (TA = 25°C)
.10712.721
.08712.21)
.llb-I_r-.l0512.67)
~ ".09512.41)
1--'
I--
.21015.33)
.19014.82)
.021(0.53)
.01510.38)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VESO
Ic
ICM
Is
PD
D45E1
-40
-40
-7
-10
-20
-1
1.67
50
D45E2
-60
-60
-7
-10
-20
-1
1.67
50
D45E3
-80
-80
-7
-10
-20
-1
1.67
50
UNITS
Volts
Volts
Volts
A
TJ, TSTG
-55 to +150
-55 to +150
-55 to +150
°C
ROJA
ROJC
75
2.5
75
2.5
75
2.5
°C/W
°C/W
TL
260
260
260
°C
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
(1) Pulse Test: Pulse Width
=300ms. Duty Cycle:S 2%.
427
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
I
TYP
MAX
UNIT
off characteristics(1)
D45E1
D45E2
D45E3
Collector-Emitter Voltage
(IC = -100mA)
Collector Cut-off Current
(\iCE = Rated VCES)
Emitter Cutoff Current
(VEe = -7V)
VCEO
-40
-SO
-80
-
-
Volts
ICES
-
-10
!J.A
IESO
-
-
-1.0
p.A
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURES
on characteristics
DC Current Gain
(Ic = -5A, VCE =-5V)
hFE
1,000
-
-
Collector-Emitter Saturation Voltage
(Ic =-5.0A, Ie =-10mA)
(Ic = -10.0A, 1s =-20mA)
VCE(sat)
-
-
-1.5
-2.0
V
V
Base-Emitter Saturation Voltage
(IC =-S.OA, Is =-10mA)
VSE(sat)
-
-
-2.5
Volts
td + tr
-
O.S
!J.S
ts
-
2.0
tf
-
0.5
-
-
dynamic characteristics
Collector Capacitance
(VCE =-10V, f =1MHz)
switching characteristics
Resistive Load
=IS2 =-20mA
VCC =-40V, tp =25!J.sec
Delay Time + Rise Time
Ic = -10A, IS1
Storage Time
Fall Time
(1) Pulse Test: PW $ 300ms Duty Cycle $ 2%.
I
4.0
I
Ic/le'SOO
-
V~,:!SAT)~ ~
- - --
,- - -
-r-- -1..:;:'2'S·c
-
TJ c-40·C
~
II I
IrJOISO·S_
TJ c -40.C
100-
i"'"i"'o'25-C
100TJ.IS~
2
--
I-~
-
.~
~ ~ ~",,""
,,-
~ ~ i-"
;:'1i ~ ..... ....
.....
v
~
.... ~
.....
'"
CE(SAT)
S
~
20
IC-COLLECTOR CURRENT-AMPERES
FIG.1
TYPICAL SATURATION VOLTAGE CHARACTERISTICS
428
~
./
10K
f.-"
TJ -1!lO°C
4K
1&.1
II.
.c
V
V
/"
V
V~
V
-
TJ o2 / (
100
/
/
'"
Vc~2V
'r\
./
. . . . r-.
./
r--..r-.
IK
400
.........
\
~,
PULSE WIDTH. 2 ml
DUTY CYCLE ° 2%
/'
\
}'"
TJ '-40°C
I
aool
I I "I
0.01
1.0
0.1
10.0
20
IC - COLLECTOR CURRENT - AMPERES
FIG.2
TYPICAL GAIN CHARACTERISTIC
100
....- JUNCTION TO
AMBIENT
./
....~
"
~ 10
I
ILl
U
JUNCTION TO CASE
Z
S
I--'"
I
IL
:!
ci
::E
II:
1&.1
:J:
V
I
V
l-
I-
z
1&.1
V
in
~.o I
I-
,v
V
V
10-4
TIME - SECONDS
FIG.3
50
u>
I-
40
lC=25OC
L50~
~
~
I
t:i
~
IL
30
I
Tc=B5°C
ILl
10
o
TC=125°C
°1
x
::EI
~~
~I
::PI
~I
II:
I
~I
WI
\
I
I
I
I
I
°20
,t-
:I
I
I
in
~
TRANSIENT THERMAL IMPEDANCE
60
70
80
VCE -COLLECTOR TO EMITTER VOLTAGE-\IOLTS
FIG.4 MAXIMUM PERMISSIBLE DC POWER DISSIPATION
429
20
10
i;'7
.- k::::== ~
/" V
,I'
/ /
/
l!l
15
/ /
/
1.0
~
I
I
1
I
I
~IOO
:
"-
10.0
@ ::J:I.... c:i
~
elI ~
"-..' ~ Ol~ ~
MAl( DC
0
TC'
0
...
1.0
FIG. 2 TYPICAL GAIN CHARACTERISTICS
!
'!'.i"e
JJI
0.1
MAX DC
TC' 70'e
"
Ie -COL.LECTOR CURRENT-AMPERES
0
I~
'r'r-
'I'-""C
FIG. 1 TYPICAL GAIN CHARACTERISTICS
or-
JII
0
Ie -COLLECTOR CURREN'-AIiIIP£RES
.I Tc.L
1'\ ,
1J'2.'·C
- - - - VCf"'V
"
ii
of----- I-
" " i\ \
iii
--VCf"'V
'1'2"C
0
I-
+~+-
0
--YQ"IY
111
D44H
....
I-
0
! '0","
TC 1
~
ro'c
I
~
I
80
VOLTAGE - VOLTS
FIG. 3 MAXIMUM PERMISSIBLE DC
POWER DISSIPATION
o.1
1.0
I
I
I
10
100
VeE - COLLECTOR TO EM'TTER VOLTAGE - VOLTS
FIG.4 SAFE REGION OF OPERATION
10.0
Tj • 150°C
- - - Tj • 25'C
044H
en
IOO _ _ _
~IO. _ _•
co
"
VaE (SATl: ICII a • 10
II)
I~ [)
!::;
o
~
1.0
V
.'"
o
>
VCE(SATl: IclIa • 2011;
z
ld
o
a:
l'
w
!::;
~
~
O. I
....
!
loll
!
~~
;;I
~
::>
..
II)
I
.00.1
VCE(SATl: Iclla • 10
E
;;
~
.....
0.01
10-4
1.0
10.0
lC - COLLECTOR CURRENT - AMPERES
FIG. 5
10-'
TIME - SECONDS
FIG. 6
TYPICAL SATURP.TION
VOLTAGE CHARACTERISTICS
433
TRANSIENT THERMAL IMPEDANCE
434
D45H Series
PNP POWER TRANSISTORS
-30 - -80 VOLTS
-10 AMP, 50 WATTS
COMPLEMENTARY TO THE D44H SERIES
The General Electric D45H is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
PNP
COlL.ECTOR
~'-EQ
EMITTER
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Features:
•
•
•
•
PNP complement to D44H NPN
Low collector saturation voltage
Excellent linearity
Fast switching
/
+
:~:m:~::DIA.
TERM.l
.35519.021
.32518.251
+1
1Tioillll!jf-.....,
TERM.2
.006(0.15}
.'filiTIO]'251
.500(12.7}MIN.
TERM.3
.0331~.841
.02710.69}
.1~'105(2.67}
~ •. :ii95i2.41i
.055!1.39}---!
.04511.14}
maximum ratings (T A = 25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(1)
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@TC=25°C
Operating and Storage JunCtion
Temperature Range
1--'
I--
.2l016.33}
.190(4.82}
.107(2.72}
.08712.21}
.021(D.53}
.015ID.38}
(unless otherwise specified)
SYMBOL
D45H1,2
D45H4,5
D45H7,8
D45H10,11
VCEO
VCES
VESO
Ic
ICM
Is
Po
-30
-30
-5
-10
-20
-60
-80
-60
-5
-10
-20
-80.
-5
-10
-20
'-5
1.67
50
-45
-45
-5
-10
-20
-5
1.67
50
-5
1.67
50
-5
1.67
50
Watts
T J,Tstg
-55 to +150
-55 to +150'
-55 to +150
-55 to +150
°C
ROJA
ROJC
75
2.5
75
2.5
75
2.5
75
2.5
°C/W
°C/W
TL
+260
+260
+260
+260
°C
UNITS
Volts
Volts
Volts
A
A
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Vs" from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle"; 2%.
435
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
VCEO(sus)
-30
-4S
-60
-SO
-
-
Volts
ICBO
-
-10
IlA
lEBO
-
-
-100
IlA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic
D4SH1,2
D4SH4, S
D4SH7, S
D4SH10, 11
=100mA)
Collector Cutoff Current
(VCB =Rated VCBO)
Emitter Cutoff Current
(VES =-SV)
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE4
FBSOA
on characteristics
DC Current Gain
(Ic =-2A, VCE =-1V)
(Ic =-4A, VCE =-1V)
D4SH1,
D4SH2,
D4SH1,
D4SH2,
4,
S,
4,
S,
7,10
S, 11
7,10
S, 11
Collector-Emitter Saturation Voltage
(Ic =-SA, Is =-O.4A)
(Ic =-SA, Is =-O.SA)
D4SH1, 4; 7,10
D4SH2, S, S, 11
Base-Emitter Saturation Voltage
(Ic =-SA, Is =-O.SA)
hFE
3S
60
20
40
-
-
-
-
VCE(sat)
-
-
-
-1.0
-1.0
Volts
VSE(sat)
-
-
-1.S
Volts
CCSO
-
230
-
pF
fT
-
40
-
MHz
td + tr
-
13S
-
nS
ts
tf
-
SOO
100
-
dynamic characteristics
Collector Capacitance
(Vcs =-10V, f =1MHz)
Current-Gain - Bandwidth Product
. (Ic =-SOOmA, VCE =-10V)
switching characteristics
Resistive Load
Delay Time +
Rise Time
Storage Time
Fall Time
Ic
=-SA, IS1 =-O.SA
Ic
=-SA, IS1 =IS2 =-O.SA
(1) Pulse Test PW = 300ms Duty Cycle:E;; 2%.
436
..-
I
I
PARTS 1.... 1.10
TI
'I~O'C
..........
! 11
~
:--Vel"'''''
I _____
w·
iI
1'\'
--VeE'tV
\'
VaooO\o'
"°r--+---T---'T'""-j-·'t-'t+l+----'--i-H+1H-ff--+-I-\iI-:;..
'.t-t+tl
Tj'
Tt
I
T,'
"'
-~'li'C
2~'C
. "o~4==1=ffFfflF=t==+++mtj:~~-~:WI\Jl.-j.m
'2~'C
,,~,
......
....
- -.:.::
-~-
...
Ie· COLUCTOR CUflAtNT- "'IPIERU
.Zc- COLLECTOA CURRENT- AMPERES
FIG. 1 TYPICAL GAIN CHARACTERISTICS
FIG. 2 TYPICAL GAIN CHARACTERISTICS
-'0 rPE:.:;,; ;.,.:;c~: :";:;E~t-~T"i0':it: :" r"T'· ·T~T+t-r--+-+-++-t--H
Tc.,L
0
°
H
°
Te' 85'C
I
~
~
Te"'OO'C
°
'\
f'-.
°
"!I
:
:1
.u
: I
;1-- ~~ I---- "~ - - t--~ t---a
:
.......
~I
~i t-!~
r---N-
l-
:
;r--a
t.'
E
..J
S
-10
r--
t--...~u t
--
DUTYCTCLE
"$0","
TSTO"C
I
I
20
40
VeE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
FIG. 3 MAXIMUM PERMISSIBLE DC
POWER DISSIPATION
VeE -COl.LECTOR TO UUTTER VOLTAGE- VOLTS
FIG. 4 SAFE REGION OF OPERATION
-10.0
T j
-T
=150 0
e
i =2SoC
045H
VOE(SATI' IC I IO"O"
U)
\1\
I-
..J
0
>
1.0
I
'f1'
~
U)
W
'"
~
I-
VCE(SATI'IC/IO'20~
..J
0
>
Z
0
0.1
>=
~
0:
"
I~
U)
...-
-.01
-0.1
~
~
VCE(SAT)' IC/IO"O
10-1
TIME - SECONDS
-1.0
-10.0
Ie-COLLECTOR eURRENT- AMPERES
10'
FIG. 6 TRANSIENT THERMAL IMPEDANCE
FIG. 5 TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
437
438
HIGH VOLTAGE
D44Q Series
NPN POWER TRANSISTORS
125-225 VOLTS
4 AMP, 31.25 WATTS
The General Electric D44Q is an encapsulated power transistor designed for various specific and general purpose
applications such as: 120 V.A.C. line operated amplifiers;
series, shunt and switching regulators; low thru high frequency inverters/converters; t-v and other display tube
deflection; and many others.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-220AB
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.404110.26]
• Very low collector saturation voltage
1·~ ~~~~.~~\
.19014.83)
f.. 38019.65)
I·
1701432)rt 05511.39)
I i . . I
.0481122)
• Excellent linearity
__ +
_ ----.
.--.
.26516.73)
24516.221
I
•
I----+---l-----+r-'...........,
• Fast switching
+
::1~:~:~~:DIA.
CASE
TEMPERATURE
REFERENCE
/
POINT
--,-
.22015.59)
------.i..
.00610.15)
.001(0.025)
TERM.l
TERM.2
TERM.3
.0331~.841
.02710.691
.05511.39)
.1
.04511.14)--"
maximum ratings (T A = 25° C)
.10712.72)
.08712.21)
.1h.J--.l0512.67)
~ _.09512.41)
1--.
I--
.21015.33)
.19014.82)
.021(0.53)
.01510.38)
(unless otherwise specified)
SYMBOL
VCEO
VCES
044Q1
125
200
044Q3
175
250
044Q5
225
300
UNITS
Volts
Volts
VESO
IC
7
4
7
4
7
4
Volts
IS
PD
2
31.25
1.67
2
31.25
1.67
2
31.25
1.67
Watts
TJ, TSTG
-55 to +150
-55 to +150
-55 to +150
°C
Thermal Resistance, Junction to Ambient
ReJA
75
75
75
°CIW
Thermal Resistance, Junction to Case
ReJC
4
4
4
°C/W
h
260
260
260
°C
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current - Continuous
Total Power Dissipation @ TC = 25°C
@TA=25°C
Operating and Storage
Junction Temperature Range
A
A
thermal characteristics
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
439
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
VCEO(sus)
125
175
225
-
-
Volts
Icso
-
-
10
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic = 10mA)
04401
04403
04405
Collector Cutoff Current
(VCE = Rated VCEO)
p.A
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE5
on characteristics(1)
DC Current Gain
(IC =2A, VCE =10V)
(Ic =200mA, VCE = 10V)
20
30
-
-
-
-
-
-
1
V
-
-
1.3
V
CCSO
-
40
-
pF
fT
-
50
-
MHz
td + tr
-
-
0.2
p's
ts
-
2.0
tf
-
-
hFE
Collector-Emitter Saturation Voltage
(IC =2A, Is = 200m A)
Base-Emitter Saturation Voltage
(IC = 2A, Is = 200mA)
VCE(sat)
VSE(sat)
dynamic characteristics
Collector Capacitance
(Vcs =10V, f = 1 MHz)
Current Gain - Bandwidth Product
(Ic =100mA, VCE = 10V)
switching characteristics
Resistive Load
Delay Time + Rise Time
Ic = 1.0A, IS1
= IS2 = 100mA
VCC =50V, tp =25 p'sec
Storage Time
Fall Time
1.7
(1) Pulse Test: Pulse Width - 300ILs Duty Cycle :5 2%.
32
T~5OC
28
,24
~
z
Q 20
i
~
VCE =10
c"O'Cl
\
- I
:1
16
is
0:
~
TJ;loo.C " "
12
~8
~
4
o
D~
LAX
LIMIT
20
........
CURRENT
...
1
a
~I
o I
g
~ 1
~I
0
I"- ~~l
:
l
.g-
..--
~
~
.
I
0
"x-
x
::I;
0
0
'"
>u
100 - - -
'"
>u
l
- r-r - -
W
.s::
lL.
I
10
200
~
!)Oe
i~
- - _1_--i.~_~!)Oe
~
V---
I
40
60
80
100
120
140
160
180
VCE -COLLECTOR-TO-EMITTER VOLTAGE - VOLTS
:..--
225
10
FIG. 1 MAXIMUM PERMISSIBLE DC
POWER DISSIPATION
i'.
~
r--
'-
'\
~
i'........ \
"
102
103
Ic-COLLECTOR CURRENT-MILL AMPERES
FIG. 2
440
.....
TYPICAL hFE VS. Ic
10.0
~--~-·-T
I
~-
IC/IS = 10
100
---T= 25·C
(/)
I--L-- ""'"
_I •\ I
~
- - Tj = 150·C
o
~IO
(/).
. ..,
......., f7
~SE fSATl"~' '
(!)
V
/
1
;:...J
o
,...>
z
VSE (SAT){
o
I
V
~ 0.1
~
«
.....
a:
:::;)
r--t' t'-~
,
~
f-(/)
-- -
~
I-"
1-1-+ 1-'-
w
I:
1
i
"'u
.'
V,
~
/
20
1--1;-
I.-'
40
10
V
~
2l
.~
I....
ffi
i;'
j:
~VCE
(SAT)
ffi
~
.4
V
I-
.2
.0 I
.01
.1
0.1
1.0
IC-COLLECTOR CURRENT-AMPERES
V
~I-
JUNCTION TO CASE·
!.IV
in
:---V CE (SAT)
~
JUNCTION TO AMBIENT
VCE' 50V
1-1-
IICr4rmAI
10- 1
10-2
10- 3
10-4
10~
10.0
1I
10'
10
MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIG. 4
FIG.3 TYPICAL SATURATION
VOLTAGE CHARACTERISTICS
10.0
FORWARD BIASED OPERATI NDUTY CYCLE ~ 50%
TC ~ 70·C
0 r'\ 1\
\
MAX DC
COLLECTOR
(J)
III
a:
~ ~ K~
CURRfN~
III
Q.
~
10
-'-
MAXIDC I
POWER
DISSIPATION I mSEC PULSES
100 ~SEC PULSES
10 ~SEC PULSES
'j
I ~ SEC PULSES _--1
z
III
!W
fill V :\
a:
a:
:::l
U
a:
g
~
:::l
,
~""I
lr~
1\
\1J
0I
o
I
U
~
I
CEO MAX· 04401
VCEO MAX- 04403
I :I:
3
10
30
100
300
VCE -COLLECTOR EMITTER VOLTAGE-VOLTS
FIG.5
a,· lOr
10000
1 ~ I
-I ~
lm~AX'r415
I
FORWARD BIAS SAFE OPERATING AREA
1000
.A J
I
r Ir
I
1/1
~
-
oJ
-
~
:1000
I-TJ= 150·
TJ=25"C
1--. I- .. I-TJ o -55·C
I
I-
:IE
I{ P.
III
I!)
Bf =
5
~ :i
a:
III
lI-
I. . .
~ 100
III
I
B,=IO
a:
,....;...-
o
F-81!s~
~,
8.
a~
>===-
t~~
~oJ
u
10
~
10
'--.:
~
V
I-"
V
v,.(.'
V
L"' v
~V
i="'"
z
Ci
I!)
t-
J:-:;::
~
..
~
1\
100
-vCE-IOV
...... VCE·!W
VVCE =
10'1
~1iIi
I\V
l\
I'i~" l\
" I~",~\\I\
a:
a:
au
.~ (\:
': 10
~~
I:.'
~
.c
,
~
ITt
VeE,IOV-
ty
~~ vc~r
~v
'ICE"
III
if
t--I/r
p:- I';:. 1-. ~
'\
IZ
+-1-
"
I- TJ o l51 ·C
TJo 2lI°C
1--1--'
i--"i--"
Tr-YOI
1.0
10
100
1000
10000
lc, COLLECTOR CURRENT, MILLIAMPERES
FIG.6
t:.:t:
VCE'
~
Vu IJB,~l
~
g
>
1;::-
I!~,I
i I ,=5
"
1111
I\I~
III
V
HU
oI
10'
TIME - SECONDS
VCEISATI vs. IcTYPICAL
FIG. 7
441
100
1000
10000
Ie ,COLLECTOR CURRENT, MILLIAMPERES
DC CURRENT GAIN, TyPICAL
442
HIGH VOLTAGE
D44T Series
NPN POWER TRANSISTORS
250-300 VOLTS
2 AMP, 31.2 WATTS
The General Electric D44T is an encapsulated power transistor designed for various specific and general purpose
applications such as: 120 V.A.C. line operated amplifiers;
series, shunt and switching regulators; low thru high frequency inverters/converters; t-v and other display tube
deflection; and many others.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-220AB
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.404110.26]
• Very low collector saturation voltage
. ~ ~~\~.~~\
I\.-.38019.65) .j~'
I
• Excellent linearity
- -t
• Fast switching
/
:
.
.--
.26516.73)
.24516.221
f
t
•
CASE
TEMPERATURE
REFERENCE
.35519.02)
/
.32518.25)
---:I59)
~
I
~.3)
TERM.1
.
T
+
~:~:~:~::OIA.
19014.83)
'1701432)rt 05511.39)
1
04811 ;12)
.
r-IIII~----'
POINT
~5)
.00110.025)
.500112.7)MIN.
TERM.2
TERM.3
.0331~.84)
.027(0.69)
.I~.10512.67)
.1
.055{1.39)
.04511.14)------"1
maximum ratings (TA
=25° C)
RATING
Collectl -Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
~
~ _009512.41)
I+I--
.10712.72)
.08712.21)
.02110.53)
.01510.38)
.21015.33)
.19014.82)
(unless otherwise specified)
SYMBOL
VCEO
D44T1,2
250
VCES
VESO
Collector Current - Continuous
UNITS
Volts
300
D44T3,4
300
400
5
5
Volts
Volts
2
2
A
0.5
2.1
31.2
0.5
2.1
31.2
A
Watts
TJ, TSTG
-55 to +150
-55 to +150
DC
Thermal Resistance, Junction to Ambient
ROJA
60
60
DCIW
Thermal Resistance, Junction to Case
ROJC
4
4
DCIW
TL
260
260
DC
Base Current - Continuous
Total Power Dissipation @TA = 25 DC
@TC=25C
Operating and Storage
Junction Temperature Range
Ic
Is
PD
thermal characteristics
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
443
=25
electrical characteristics (T c
I
Q
C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
BVCES
300
400
-
-
Collector Cutoff Current
(VCE = Rated VECS)
ICES
-
-
10
/LA
Emitter Cutoff Current
(VEB = SV)
lEBO
-
-
10
p.A
CHARACTERISTIC
UNIT
off characteristics(1)
Collector-Emitter Breakdown Voltage
(Ic = 10 /LA)
D44T1,2
D44T3,4
Volts
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURES
FBSOA
on characteristics(1)
DC Current Gain
(Ic =SOOmA, VCE = 10V)
(Ic =SOmA, VCE = 10V)
(Ic =SOOmA, VCE = 10V)
(Ic =SOmA, VCE = 10V)
30
40
75
40
-
175
-
-
1.0
V
-
-
1.2
V
Ccb
-
25
-
pF
fT
-
45
-
MHz
td + tr
-
0.2
-
p's
ts
-
3.3
-
0.6
-
D44T1,3
hFE
D44T2,4
Collector-Emitter Saturation Voltage
(Ic =SOOmA, IB =SOmA)
VCE(sat)
Base Emitter Saturation Voltage
(Ic =SOOmA, IB = SOmA)
VBE(sat)
-
-
-
-
dynamic characteristics
Collector Capacitance
(VCB =10V, f = 1 MHz)
Current Gain - Bandwidth Product
(IC = 100mA, VCE = 10V, ftest =1.0 MHz))
switching characteristics
Resistive Load
Delay Time + Rise Time
-
Ic =SOOmA, IB1 =IB2 =SOmA
Vce; =SOV, tp =2Sp.sec
Storage Time
Fall Time
tf
(1) Pulse Test: Pulse Width - 300/ls Duty Cycle::; 2%.
400
10
8
I I.
200
T1Jooc
.
Jt
6 I--- TJ
I--- - - - T J
veE·IOV
I I
100
80
t·Z!i
OC
60
IT}. -wc
~
40
4
...........
2
I
I
.8
"
~
~
\
...J
""
\
20
g
z
o
i=
~
\
.4
.6.8 I
.04 .06 .08 .1
.2
Ie - COLLECTOR CURRENT - AMPS
FIG. 1
~
III
\
.02
1/
CI)
g
~
10
.01
1
• ISOOC
• 2S 0 C
.6
.4
.1
~ .08
ct
\
.04
/
I.
I'
--- "'--- -
"
-'
./
~T
.~
V~EISATl
/
~,..
i
l
-/
f
/
.2
~ .06
CI)
-- --- - .-
VAEISATI
I
"
-
"",'"
Ie/IB • 10
.02
.01
.01
2
.02
FIG. 2
TYPICAL hFE VS. IC
444
.04 .06.08.1
.2
.4.6.8 I
Ie - COLLECTOR CURRENT - AMPS
TYPICAL SATURATION VOLTAGE
CHARACTERISTICS
2
,.
'-
100
100
...
en
o.q
JUNCTION TO AMBIENT
o
o
~
III
'"
~
ii:
~
10
f
r----......
III
U
z
!
..J
.~
~
It:
1!
JUNCTION TO CASE
.... -
o
~
Z
1/
III
"
u
Z
::I
VCE~ SOV
It:
IC
~
I
°io-S
FIG. 3
10-3
,
I
o
~
=40mA
I 1111 I
II
10-4
'-
10
z
o
f:
Z
...'"
.... ':0-
u
I
C;;
i""
= I MHz
.q
~
III
...
..... :"'-
I
IL
'"
:z:
...
......
u
o
Z
.......
II:
It
o
,~
I
10-2
10-1
I
TIME - SECONDS
u
I
100
10
Vca - COLLECTOR TO BASE VOLTAGE - VOLTS
10
MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIG.4 COLLECTOR TO BASE JUNCTION CAPACITANCE
VS. REVERSE BIAS VOLTAGE
4
2
MAX DC CURREN, LtiT
en
a.
::!:
.q
I
.8
~
.6
~
.4
u
.2
II:
II:
::I
.....
MAX DC POWER-,
~ISSt~TION
~
/
::u
.1
~ .OB
;5
.06
~
.04
"\
%
~~,;.
,
,,~
~
-
~
.02
.01 I
......
1\
FORWARD BIAS OPERATION
Tc :S 2SoC
II:
2
VCEO MAX D44T1,2
I I
VCEO MAX D44T3.4
'f 'I I I
4
6 8 10
20
40 6080100
200
VCE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
i
ti 400
FIG. 5
1000
SAFE REGION OF OPERATION
445
446
HIGH VOL TAGE/HIGH SPEED
D44TD Series
NPN POWER TRANSISTORS
300-400 VOLTS
2 AMP, 500 WATTS
The D44TD series of NPN Power Transistors is designed for
use in switching applications requiring high-voltage capability, fast switching speeds and low-saturation voltages.
They are particularly suited for off-line switching power
supplies, solid-state lighting ballast, invertes, solenoid/relay
drivers and deflection circuits.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-220AB
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
. 1~g\~.~;\~
• Performance information tailored for switching
applications
...--.
I
.26516.731
.24516.221
• 100°C maximum limits specified for:
• Switching times
• Saturation voltages
• Leakage currents
_
.0551'.391
.04811.221
CASE
I---+---I----+t
T_;--'-, TEMPERATURE
REFERENCE
+
:1:~g~~:DIA.
.35519.021
.32518.251
~
~.31
• 300 to 400V VCEO(sus) in a TO-220AB Package
TERM.l
• Very fast turn-qff, tf < 180 nsec (typ.) @ 1.SA
..f1' ;.,11114;;--.
/
POINT
- ,
.22015.591
~51
.001(0.0251
.5001'2.7IMIN.
TERM.2
TERM.3
.0331~.841
.02710.691
.1 ~.10512.671
.:595i2.41i
~
~
.055(1.39)
_I
.04511.141---'
1+-'
I---
.21015.331
.19014.821
.10712.721
.08712.211
.02110.531
.01510.381
maximum ratings (TA =25° C)
(unless otherwise specified)
D44TD3
300
300
400
7
2
4
.5
1
50
20
D44TD4
350
350
500
7
2
4
.5
1
50
20
.4
TJ, TSTG
Thermal Resistance, Junction to Case
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(')
UNITS
Volts
Volts
Volts
Volts
A
.4
D44TD5
400
400
600
7
2
4
.5
1
50
20
.4
-55 to +150
-55 to +150
-55 to +150
°C
ROJC
2.5
2.5
2.5
°CIW
Thermal Resistance, Junction to Ambient
ROJA
75
75
75
°CIW
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
h
260
260
260
°C
Base Current - Continuous
Peak(')
Total Power Dissipation @ Tc = 25°C
@Tc= 100°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCEX
VCEV
VEBO
IC
ICM
IB
IBM
Po
A
Watts
W/oC
thermal characteristics
(1) Pulse condition, tp:::; 5msec.
447
electrical characteristics (Tc
I
= 25
0
C)
(unless otherwise specified)
I
CHARACTERISTIC
SYMBOL
I
MIN
MAX
UNIT
-
. Volts
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ie =25mA, IB =0)
D44TD3
D44TD4
D44TD5
VeEO(sus)
300
350
400
Collector-Emitter Voltage
(Ie =2.0mA, IB1 =IB2 =.4A)
(VBE =-5V, L =200 jLh)
D44TD3
D44TD4
D44TD5
VeEX
300
350
Collector Cutoff Current
(VeEV = Rated Value, VBE(OFF)
(VeEV = Rated Value, VBE(OFF)
400
leEV
=-1.5V)
=-1.5V, Te =100°C)
Emitter Cutoff Current
(VEB =7V, Ie =0)
-
lEBO
Volts
rnA
-
0.1
1.0
-
1.0
mA
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 13
Clamped Inductive SOA with Base Reversed Bias
RBSOA
SEE FIGURE 14
on characteristics(1)
DC Current Gain
(Ie =1A, VeE =2V)
. (Ie =2A, VeE =3V)
Collector-Emitter Saturation Voltage
(Ie =1A, IB =.2A)
(Ie =2A, IB =.4A)
(Ie =lA, IB =.2A. Te =100°C)
Base-Emitter Saturation Voltage
(Ie =2A, IB =.4A)
(Ie =2A, IB =.4A, Te =100°C)
hFE
-
8
-
5
VeE(SAT)
Volts
-
-
0.6
1.0
1.0
-
1.2
1.2
fT
15
50
MHz
COB
10
25
pF
VBE(SAT)
Volts
dynamic characteristics
Current Gain - Bandwidth Product
(Ie =.25A, VeE = 10V, ftest =1.0 MHz)
Output Capacitance
(VeB =10V. IE =a, f =0.1 MHz)
switching characteristics
MAXIMUM
Resistive Load (See Figure 17 for Test Circuit)
Delay Time
Vee = 250V, Ie =1.5A
Rise Time
ld
25°C
.06
Te
=IB2 =0.3A. tp =25 p'sec
100°C
.08
p's
tr
0.6
0.8
p'sec
Storage Time
ts
2.5
3.0
p'sec
Fall Time
tf
0.5
0.8
p'sec
tsv
tf
3.0
3.5
p's
0.3
0.6
p'sec
ts
2.1
2.6
p'sec
tf
0.18
0.23
p'sec
IB1
Inductive Load, Clamped (See Figure 17 for Test Circuit)
Storage Time
VeLAMP =250V. Ie =1.5A.
Fall Time
IB1 =182 = O.3A, tp
VBE(OFF) =-5V
Storage Time
L
=25p.sec
TYPICAL
=200 p.h
Fall Time
(1) Pulse Duration
=300llS, Duty Factor::; 2%. Do not measure on a curve tracer.
448
TYPICAL DC CHARACTERISTICS
200
T1
100
80
60
z
Ci
CI)
"!50 C L-
TI'25°C
40 f- "-55 O C
T1
z
20 ~
u
10
8
6
~
III
II::
II::
:I
U
Q
Ii
x
-- r--:
0
Te=2S0C
III
~
0
>I
2.0
II
...
W
~
~
~~
0
1',
Ie· O.SA
1e"I.OA
le02·0A
1.6
>
II:
~,
r-.
le=O.IA
........w
1.2
1\
~
w
,
II:
~
\
.8
,
u
w
4
- ---VCE"OV
- - - VCE o 2V
2
1.0
.01
.05
.02
.2
.10
.5
-'
-'
0
f-
<.l,
.4
1Ill
1.0
2
o
5
.001
.005
.002
IC,COLLECTOR CURRENT-AMPERES
.01
.02
-
"-
-
'"
>"
.05
0.1
r0.5
0.2
1.0
I o,BASE CURRENT-AMPERES
FIGURE 2. COllECTOR SATURATION REGION
FIGURE 1. DC CURRENT GAIN
10.0
10.0
.8 f = I O -
.8, =10
.8, =8
~
2.0
~•
1.0
.8
.6
....
.4
g
III
.8(4 \f~
W
TC =25"C
.8' =IC/I O'
I§
~
w
~
.....
~~~
.2
~~
;V
0.1
0.2
0.1
,.
/I
g
/3t =Iell o•
1.0
':'II:
.6
9-'
.4
:E
./
/~./
0
~ ..... ~ """V
:::: ~"""
s
.8,=4 -
~~
.2
1.0
2.0
0.1
3.0
CI)
~
4.0 -
-
Tc "25°C
....
~
i
'll
III
~
-
~f'lc/IBI
2.0
2.0
3.0
= 100°C
TC=25°C
_~b
CI.
5>
II::
III
0.5
1,000
(/)
~
0.2
FIGURE 4. VCEISATI VS. Ic, Tc
10.0
8.0
6.0
0
-
Ie COLLECTOR CURRENT -AMPERES
FIGURE 3. VCEISATI VS. Ic, Tc = 25°C
III
8::==
0.1
'C,COLLEClOR CURRENT -AMPERES
!:j
V
..- ...... t::: ,.,..;
~
~~~
~ r::---
>"
0.5
V/
,/
./' .,/ I-""
-'
"'
.8,=6
//
0
u
VI;
Te = 100°C
........w
IP,=8_
f /
2.0
II:
./
.v
V
I
~
...w~
~
I
§
'Y,.
~III
CI)
I
.8 =6"\
!S
~f=2
1.0
0.8
0.6
~,"8
.:.,
-
U
Z
~
100
i3
~
~
--
0.2
0.2
0.5
1.0
2.0
3.0
10
0.1
1.0
1.0
VR,REVERSE VOLTAGE-VOLTS
IC ,COLLECTOR CURRENT-AMPERES
FIGURE 6. CAPACITANCE
FIGURE 5. VBEISATI VS, Ie
449
i'-- ....... i--
20
100
TYPICAL SWITCHING CHARACTERISTICS
1.0
.8
.6
.4
~.
.....
---~ --.....
-- - .- .....
1""-.2
.1
.08
.06
.'
~
i"-
"
trT-
i=
~
;:
/
,..,.. ~"
I-I-- - - - TC"IOO°C
lal"Ia2=lc /S
tp '20 I'SEC
-;---
;---
VCC '2S0V
I
I
0.2
.0 I
0.1
I
-
Q:
Q:
0.6
_-= --=
-
_--Tc=2'5=c--
:J
-
0.4
0.2
..J
..J
8
II
I
0.8
!;:l
1.0
O. I
2.0
-
...
~
SEEFIG.17 FOR TEST
CIRCUIT
-
0.5
Z
U
Q:
-
4.0
1.0
~
w
td_
TC=2SoC
-
6.0
2.0
1=
iUl
--
.04
.02
'"
~~
10
8.0
I
I
I ~
I \
I
L
1
I.
Is
,
I
VCE
lal
---
f-O
I
I
1
1
--
VCE(CLAMP
r--
w
Ul
::I.
10
8.0
,
6.0
w
::Ii
4.0
z
;:
1
1\
1=
i
Ul
1
7
u
t- ~
0.2
'\
1.0
0.8
Q:
Q:
0.6
~
'"
~O%lc
2.0
z
-
Q:
/'
-
r- - - -
Tc "IOO°C
VCE(CLAMP)=250V
1"-.........
VSE(Off) = -5V
-....
0.4
~
U
W
..J
..J
- -
I---
:J
u
-- --
If-
---
... 10- r0-
1.0
0.5
f- - - Tc=25°C
(!)
If
........
~
- -
----
0.1
i=
I
-
..... Is
2.0
FIGURE 8. TURN-OFF TIME RESISTIVE LOAD
COLLECTOR CURRENT
,
i"-.
r- t-
IC ,COLLECTOR CURRENT-AMPERES
FIGURE 7_ TURN-ON TIME RESISTIVE LOAD
-
-r--
Tc=IOO°C
VCC'2S0V
la"ls2' l c/S - r--'- SEE FIG. 17
Ip· 25 I'SEC - f - - FOR TEST
CIRCUIT
IC ,COLLECTOR CURRENT -AMPERES
90% IC
I"'-
-l-
r--
I-
t-- r-
lSI = IS2=lc 15
Ip' 251'SEC
L = 200 I'H
-- r-- - -
==--1=r-
....
........
-....
0.2
0
~
Is
1'--1-
---
----===
SEE FIG. 17
FOR TEST
CIRCUIT
-
--. -----
If-
U
0.2
la2
0.5
1.0
IC,COLLECTOR CURRENT-AMPERES
FIGURE 10. CLAMPED INDUCTIVE TURN-OFF TIME
FIGURE 9. INDUCTIVE TURN-OFF WAVEFORMS
1.8
1.6
'"i=
::Ii
1.4
(!)
!:
V CLAMP = 250V
Ial = Ic /5
L= 200l'H
'"i=:::E
Tc=25°C
z
:r
u
I.B
l-
IB,=lc/5
1.2
i
0
1.0
w
'"
1.0
N
::;
::i
REFER TO FIGURE 10
FOR NORMAL SWITCHING
TIME
.8
Q:
0
z
L= 200 I'H
Tc=25°C
Ul
N
~
1.4
z
;:
u
1.2
~
::Ii
VCLAMP =250V
(!)
Ul
0
1.6
Q:
.B
0
z
Ie =2A
Ic=IA;.~-~--r--+--;----r---+---i
.6
Ic=·5A
~
:::E
.6
Ie =.5A
.4 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
.4
2.0
0
0.2
O.B
1.0
1.2
RATIO I al/1a2
FIGURE 12. FALL TIME VARIATION WITH 182
FIGURE 11. STORAGE TIME VARIATION WITH 182
450
2.0
In~~!§~j!fl~IiI!~~~~~~I!~~~~fl~~
...'"
2.o1--+-+-t-H-++~'Io...--Ihf.,.,;:"~1.:
,#~C'
...
6.0
f3
1-
4.0
.,[0
ftI :;e;
100
I-t-H-tti
I I'0r::?~~_.
I
...
0.6 ~
- -'. BONDING WIRE LIMIT
Q4 _ -------·THERMAL LIMIT
i3
" ' - - .- - SECOND BREAKDOWN
Q21---;--+ LIMIT
TCo 25"C
II:
II:
II:
g
I;l
"'.5'~C'
MAXoC"r-.
':::t"
"
""
I~~
.06
~
.04
D44TD3"'"
m I---+--++ir+++tt--+
D44TD4'/
o
u
Zll+-
D44T05
IOloIU2=IC/5
1-
1.6
II:
1.2
~II:
VUE =-5V
-
/./-1~+-+-Hf-+H+l
...
u
~
.8
...J
...J
5
2
10
20
50
~u
D44TD4
D44TD5
V
1
II
,
100
300
100
400
200
300
VCE ICLAMPEOI ,COLLECTOR-EMITTER VOLTAGE-VOLTS
1,000
VCE ,COLLECTOR-EMITTER VOLTAGE-VOLTS
10.0
100
;=
~
w
-
~
i-'
1.0
a.
...
;Ii
tf:
0
r::..::-
:::E
.05.....
a:
w
~
I~I'
_
w
-
iii
z
«
...-.
z
~
~
::::::;:::
60
~
-.02
-t~J
-.01
SINGLE PULSE
a:
40
~
30
w
10-4
10-5
IIIIIIII I IIIi IIli
10-3
E"04/(OOIVIII
~,,-£EF/04rIlliG
""
10-2
~4<
o~
'%
,"-
""
20
0
20
30
40
50
II-PULSE WIDTH-SECONDS
60
70
80
90
100 110
........
120
TC,CASE TEMPERATURE-'C
FIGURE 15. TRANSIENT THERMAL RESPONSE
r- .......
~4l'.
10
10-1
--
l'.
~~-il
0
a.
DUTY CYCLE = t II
.0 I
50
a:
w
c
a:
J
~~BFiI
C>
I-
10-6
70
U
tt
.1
'" "'-
80
I-
~ .2
!
...J
«
J:
lIZ
"" ~ r-..
90
....
DUTY CYC LE
.5
600
FIGURE 14, CLAMPED RG,VERSE BIAS
SAFE OPERATING AREA
FIGURE 13. FORWARD BIAS SAFE OPERATING AREA
~
w
u
--
I'..
D44TD3 ....
.01L--_~~~~~_-...J~L...J~~~~~~~~~~
I
\
L=200JolH
g
t
nl'!~~~~~!ib;~~5:-:::::~~~!I!§~i!~!11
1"
Y \\
...J
...J
\
TC ~IOO'C
a.
:::E
aa:
"
~./ ~
VALID UP TO RATED
VCEOISliSI
2.0
II:
I'-..
"
130 140 ISO
FIGURE 16. POWER DERATING CURVE
Vcc (AS SPECIFIED)
15Sl
IN914
L
56Sl
+IOV
~
WAVEFORMS
(RESISTIVE SWITCHING)
1 sl x 90%
Q::J ~s c.:.:...
MIN
IN5626
D.U.T.
" =C-B
=Y-x
I,'s
+
VCE (CLAMP)
(AS SPECIFIED)
'd=B-A
=z-y
-=
NOTE:
(2) VALUE OF L (INDUCTOR) IS
SPECIFIED ON RATING CURVES.
(3) SELECT Rc (RESISTIVE SWITCHING)
FOR DESIRED lc.
(4) ADJUS1. Va .. V a2 AND RB2 FOR
DESIRED IBI AND IB2 VALUEs.
(5) CIRCUIT LAYOUT AND COMPONENT
SELECTION IS CRITICAL DUE TO
FAST SWITCHING TIMEs TO BE
MEASURED.
NOTE:
TRANSITION TIME FROM 90"1. lSI TO 90%
lS2 (X-W) MUST BE LESS THAN 100 .SEC.
FIGURE 17. TEST CIRCUIT FOR SWITCHING TIMES AND RBSOA
451
452
D44TQ1
D44TQ2
HIGH SPEED
NPN POWER TRANSISTORS
400-450 VOLTS
12 AMP, 100 WATTS
The D44T01 and D44T02 are designed for high-voltage,
high-speed power switching inductive circuits where fall
time is critical. They are particularly suited for 115 and 220V
switch-mode applications such as switching regulators,
inverters, motor controls, solenoid/relay drivers and deflection circuits.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-220AB
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
::~~\!:~~\rt
.055(1.391
I
.04811.22)
• VCEO(sus) 400V and 450 V
• Reverse Bias SOA with inductive loads @ TC = 100°C
.--.
.265(6.73)
.24516.22)
/t-
CASE
TEMPERATURE
REFERENCE
•
-+--I----It -i-'--1
• 700 V blocking capability
:~:~:~:~::DIA.
• SOA and switching information.
T
+
+
1
TERM.l
.35519.02)
/
.32518.25)
-----::l59)
~
I
~.3)
-/f;.mll4ii+--,
POINT
-:ooof.15)
.00110.025)
.500112.7)MIN.
TERM.2
TERM.3
.033(~.84)
.02710.69)
.1~.'0512.67)
.055\1.39)--1
.04511.14)
maximum .ratings (TA
r*J
~ _.095(2.41)
J:=
.10712.72)
.08712.21)
.021(0.53)
.01510.38)
.21015.33)
•. 19014.82)
=25°C) (unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)(I)
Base Current - Continuous
Peak (Non-Repetitive)(1)
Total Power Dissipation @Tc= 25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCEV
VEBO
Ic
ICM
IB
IBM
D44TQ1
400
650
6
12
24
D44TQ2
450
750
6
UNITS
Volts
Volts
Volts
PD
12
100
0.8
12
24
6
12
100
0.8
Watts
WIDC
TJ, TSTG
-65 to +150
-65 to +150
DC
R8JC
1.25
1.25
DCIW
TL
260
260
°C
6
A
A
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5ms. Duty Cycle :510%.
453
electrical characteristics (T c = 25° C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
VCEO(sus)
400
4S0
ICEV
-
-
IESO
-
-
TYP
MAX
. UNIT
-
-
Volts
1
mA
1
mA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic = 10mA, Is =0)
Collector Cutoff Current
(VCE = Rated Value, VSE(OFF)
D44TQ1
D44TQ2
=1.SV)
Emitter Cutoff Current
(VES =6V, IC =0)
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 1
Clamped Inductive SOA with Base Reversed Bias
RBSOA
SEE FIGURE2
on characteristics(1)
DC Current Gain
(IC =SA, VCE =SV)
(Ic =SA, VCE =SV)
Collector-Emitter Saturation Voltage
(Ic =SA, Is = 1A)
(Ic =SA, Is = 1.SA)
(Ic = 12A, Is =3A)
S
6
-
40
30
-
-
1
1.S
3
V
-
-
-
-
1.2
1.6
V
0.06
0.1
p's
0.4S
1
ts
-
1.3
3
tf
-
0.2
0.7
-
0.92
2.3
0.12
0.7
hFE
VCE(sat)
Base-Emitter Saturation Voltage
(Ic =SA, Is = 1A)
(Ic =SA, Is = 1.6A)
VSE(sat)
switching characteristics
Resistive Load (Table 1)
DelayTrme
= 12SV, Ic =SA
=IS2 = 1.6A, tp =2S P.s
. VCC
td
Rise Time
IS1
tr
Storage Time
Duty Cycle < 1%
Fall Time
I nductive Load, Clamped (Table 1, Figure 13)
Storage Time
(Ic
Crossover Time
(IS1
=SA, VCLAMP =300V)
=1.6A, VSE(OFF) =SV, Tc = 100°C
tsv
tc
p's
(1) Pulse Test: Pulse Width - 300ILs Duty Cycle::; 2%.
100
0
~
t-
10
5
Z
w
=
=
::::l
,-
-
0
6:'
-
'- --
-
2-
1 ms
TC = 25 0 C- -de
2
~
~
~
"
t-
...J
...J
oU
U
~
\
W
"
0.0
TC';; 1000 C
IBI = 2.5 A
8
U
......
c:
5
\
6:'1 0
~
......
1 ---T~~RMAL LIMIT
~ 0,5 - - - BONDING WIRE LIMIT
-SECOND BREAKDOWN LIMIT
G
w O. 2
CURVES APPLY BELOW RATED VCEO
...J
.1
0
0,0 2
0.0 1
10"s
100"s ...
U
~
--
14
\
4
2
~
VBE(off) = 9 V-
.........
~
~
D44TQ1
D44TQ2
I\.
~
D44TQ1" r-4....
....... D44TQ2-
~~
J. I
~
10
20
30
50
70
100
200
300
500
100
200
300
400
500
600
5 V
3 V15V
700
800
VCE. COLLECTOR - EMITTER VOLTAGE (VOLTS)
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE (VOLTS)
FIGURE 1 - FORWARD BIAS SAFE
OPERATING AREA
FIGURE 2 - REVERSE BIAS. SWITCHING SAFE
OPERATING AREA
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
4S4
I
'=' ---
"
O.B
a:
o
t;
~ 0.6
f"--
r- 1"'-1-0..
........
l'-.
z
~
r-- r- ....
THERMAL
DERATING
0.4
Q
r-
1-T1;;;L-r++im=rH*Wb-I'!!J;"".,9HtHtt+H-I+HttI-+-t-1+1tttH
ill·
i!:
i
r--....
140
60
80
100
120
TC. CASE TEMPERATURE (OC)
:ri
160
~
~-+:~FBI"/5I'i-t-+Hitit-t-H-+ DUTY CYCLE, D= 11/12'
I I t....
JlJl.""!"
0.02
~--bf9-l"HIt--H-t--tHtttt-t-t-t-t+l
111"""1 T
-.j 12 I- P(pk) 1HI-++-H+l+HI
0.01
t;rr iTmilli
0.02
0.05 0.1
E
0.2
0.5
1.0
2.0
5.0
TIME (ml)
:::.
'"r---C"r--
0
...<
25°C
a:
a:
~
::::l
u
u
-55°C
0
>
a:
7
~~
:!i
w
cr:
0
tU
w
......
~
VCE = 5V
0.7
I
I. 2
~
10
o. B
,
1
~
o.4
w
u
20
>
0
0.05 0.07 0.1
0.2
~
~
1\
~
0.3
I"O.S
0.7
1.4
I 1 1
1 II I
0.6
1.2
-os...-
<.:I
<
t-
...
~
ICIIB = 3
TJ = -550;" .........
-'
25
O.S
0
>
>0.6
,.....,. I---'"
-
0.40.2 0.3
.............
en
tc5
V
:::.
w
,I
V
.,. V l 50 0C
",
TJI = 1510dC
O.S
ICIIB
=3
If
0.4
(j
~ 0.3
...
~ 0.2
~
>-
I
1/1
t-
,...... 55°C
"
~ V2S oC
O. I
-I---' IO.S 0.7
'\ .....
1
0.7
0
'" -
1\
FIGURE 6 - COLLECTOR SATURATION REGION
FIGURE 5 -DC CURRENT GAIN
...
\
\
li
1
lB. BASE CURRENT (AMP,
IC. COLLECTOR CURRENT (AMP)
~
w
10k
1\12~
BA
1\
L\
1\
(..)
2
500
1
SA
3A
0
'1
en
t-
100 200
1\
,
1
IC = 1 A
w
tt-
t....
z:
II
t-
0
-t-
0.5
50
TJ = 2S 0 C
1. 6
<.:I
KI500C
~
0.3
20
II
...
w
5
0.2
10
1Ht-H-+-l+1-HH
0
z
...
D CURVES APPLY FOR POWER
RruC= 1.25·CIW
PULSE TRAIN
MAXSHOWN
READ TIME @t1
TJ(pk)" TC = P(pk) ZBJC(I)
FIGURE 4 TYPICAL THERMAL RESPONSE [(ZOJC(t)]
t-
0
W
ZOJC(I) = r(l) ROJC
0.03
en
tl""-
Q
L.oI
0.05
0.Q1
0
'"
f-'
~!;III~il~""~~
.LL
FIGURE 3 - FORWARD BIAS POWER DERATING
tZ
w
~
U
0.1
0.1
~ 0.07
005
1'..
40
HI41-+tHHl++H*ftHjt:.lo.r4Fbl~W~:..t-IH-I+HHlI-+t-11-H1tttH
0.2
~
........
H+t+I-tttIHI++tttttll-+++H:J,H1E~r~++tHtII-++I+HtttH
~
..
z
O. 2
20
0.5
0.3
0:
~
a
~
0:
ili
1"-
w
1'0~1III1iiD.
QO.7~
~
~
~
cc
~
-
"'-
<.:I
~
SECOND BREAKDOWN
DERATING
I--
10
o
0.2
20
0.3
0.5
0.7
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP,
FIGURE 7 - BASE-EMITTER SATURATION VOLTAGE
FIGURE 8 - COLLECTOR-EMITTER
SATURATION VOLTAGE
455
10
20
10K
=VCE = 250 V
-j
.3
77 7
-
-TJ= 1500 C
....z
1250 C
~ 100
or
:::>
u
.,.
0
....
7
7
./
7
/
I
T
./
7
I
2K
Cib
/
I---
- lK
~ 800
~ 600
/
z
~ 400
I
I
10
...u...
...
I
'7
TJ = 25 0C
7
1000e
7soe
or
1/ I
/
I
lK
C
I
4K
.........
U
I
«
~ 200
ROb
<.),
7
50 0 e
0
.......
/
u
~
iOO
80
60
25 0 e
Iio=
0.1
-04
=REVERSE
40
FORWARD
-0 2
0
+0.2
0.5
0.1 0.2
+0,6
+0.4
1
5
2
10
20
110
50
l JU
VR, REVERSE VOLTAGE (VOLTS)
VBE. BASE,EMITTER VOLTAGE (VOLTS)
FIGURE 10 - CAPACITANCE
FIGURE 9 - COLLECTOR CUTOFF'REGION
RESISTIVE SWITCHING PERFORMANCE
700
..,.:
~" ~
w
""
:Ii
[I
lK
I~
t'-.
.., 700
/
'
~
,/
.....
.....
I,
~
./
I I
0.5
0.7
500
300
"-
200
Id @ VBE(off) = 5V'
70
VCC = 125V
Ic/lB = 5
TJ = 25 0 C
.....
..............
100
0.3
-
Is
f-"
/
~_ 200
50
0.2
.-
VCC = 125 V
lC/lB = 5
TJ = 25 0C
i'.
500
·300
-
2K
lK
I
.....
'" "-
V
.............
.....
I
1
100
0.2
20
10
0.3
0.5
IC, COLLECTOR CURRENT (AMP)
-
l/~
If
----
0.7
IC, COLLECTOR CURRENT (AMP)
FIGURE 12 - TURN-OFF TIME
FIGURE 11 - TURN-ON TIME
,.--.4..
IC
90% VCEM
Isv
I,v
h
Vclamp -
I ~90"/~ l e i
+~lli'" !--lli-Ic-\
V
Vclamp
-- --\- - -- --- -~
-- -- I--
"
10"0 ..........
10%
VCEM- ICM- 2u· u _
IC
1 8 - ---, 90% IBI
"\
-
..-
---
-
--
TIME
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
456
10
20
VERY HIGH SPEED
D44VH Series
NPN POWER TRANSISTORS
30-80 VOLTS
15 AMP, 83 WATTS
COMPLEMENTARY TO THE D45VH SERIES
The D44VH is an NPN power transistor especially designed for
use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where
very fast switching and low-saturation voltages are necessary.
This device complements the D45VH PNP power transistor
and is characterized with performance information which
relates directly to switching.
NPN
COLLECTOR
rt
EMITTER
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.404110.26) . ~ ~~\~.~~\
\'-.38019.651 -I' I '
Features:
I
• Fast Switching ts ~ 700 ns resistive
tf~ 200 ns
I-i..,
_ -t
.19014831
.17014.32I
...---
.26516 73)
.24516.221
f
I
_
CASE
TEMPERATURE
REFERENCE
f--+--I----t-t
T-r-'-,
• Low VCE(sat) ~ O.4V @ Ic = 8A
.35519.02)
.32518.251
/
~
1fr-~IIII-!r+--.
TERM.2
POINT
~
.22015.591
~15)
.001{O.0251
~.31
TERM.l
.05511 391
.04811.22)
.500112.7IMIN.
.05511.391
.04511.14)
TERM.3
.0331~.841
.1~.10512.671
~ ".09512.411
.02710.69)
.055(1.391-1
.04511.14)
maximum ratings (T A = 25° C)
I+I+-
.21015.331
.19014.821
~
.10712.721
.08712.21)
.021{0.53)
.01510.381
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
- Peak (1)
Base Current - Continuous
- Peak (1)
Total Power Dissipation @ Tc =25°C
@Tc =100°C
Derate above 25° C
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO(sus)
VCEX
VCEV
VEB
Ic
ICM
IB
IBM
Po
TJ, TSTG
D44VH1
30
40
50
D44VH4
45
55
65
D44VH7
60
70
80
D44VH10
80
90
100
UNIT
V
V
V
V
A
7
15
·20
5
10
83
33
.67
W;oC
-55 to +150
°C
A
Watts
thermal characteristics
CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
ROJC
ROJA
MAX
1.5
74
°C/W
°C/W
TL
235
°C
SYMBOL
(1) Pulse measurement condition PW';; 6.0 ms, See Figure 14.
457
UNIT
electrical characteristics (T c = 25° C)
I.
(unless otherwise specified)
I
CHARACTERISTICS'
SYMBOL
MIN
MAX
UNIT
off characteristics(1)
Collector-Emitter Sustaining Voltage(') (IC = 100mA, IS = 0)
D44VH1
D44VH4
D44VH7
D44VH10
Collector-Emitter Voltage(2)
(Ic = 1A, VCLAMP = Rated VCEX, Tc = 100°C)
D44VH1
D44VH4
D44VH7
D44VH10
Collector Cutoff Current
(VCEV = Rated Value, VSE(off) =4.0V)
(VCEV =Rated Value, VSE(off) = 4.0V, Tc = 100°C)
Collector Cutoff Current
(VCE =Rated VCEV, RSE =50 n, Tc =1000q
Emitter Cutoff Current (VES =7V, IC = 0)
VCEO(sus)
-
30
45
60
BO
V
VCEX
ICEV
ICER
IESO
V
40
55
65
90
-
-
10
100
pA
100
pA
10
pA
second breakdown
Second Breakdown with Base Forward Biased
Second Breakdown with Base Reverse Biased
SEE FIGURE7
SEE FIGURE B
FSSOA
RSSOA
on characteristics(1)
DC Current Gain
(Ic = 2 A, VCE = W)
(Ic = 4 A, VCE = 1V)
Collector-Emitter Saturation Voltage
. (Ic =BA, Is =O.4A)
. (Ic = BA, Is = O.4A, Tc = 100°C)
(IC = 15A, Is =3.0A, TC = 100°C)
Base-Emitter Saturation Voltage
(Ic = 8A, Is = O.4A)
(Ic =BA, Is = O.4A, TC = 100°C)
hFE
VCE(sat)
VSE(sat)
dynamic characteristics
Inductive Load, Clamped (See Figure 15 for Test Circuit)
Storage Time
VCC =20V, IC = 8A
Fall Time
VCLAMP = Rated VCEX
L
0.4
0.5
O.B
-
1.2
1.1
V
V
50
MHz
Cos
120
PF
Maximum
Resistive Load (See Figure 16 for Test Circuit)
Delay Time
VCC =20V, Ic =8A
Rise Time
IS1 = IS2 = 0,8A
Storage Time
tp = 25 J.Lsec
Fall Time
Fall Time
-
fT
switching characteristics
Storage Time
-
-
Typical
Current-Gain - Bandwidth Product
(IC =0.1A, VCE = 10V, ftest= 1 MHz)
Output Capacitance
(VCS =10V, IE =0, ftest =1 MHz)
IS1
-
35
20
TC
td
tr
ts
tf
25°C
50
200
-
ts
tf
800
-
=o.8A, VSE(off) =-5V
ts
=200 ph
tf
(1) Pulse Duration = 300 J.lSec, Duty Factor,;;; 2%.
(2) See Figure 15 for Test Circuit.
458
250
700
100°C
400
1BO
Typical
370
2BO
130
150
nsec
nsec
nsec
nsec
nsec
nsec
nsec
nsec
SAFE OPERATING AREA
----:s ..
---
...
J =150·c
200
2.0
~ •... r..
T =25·C
100
BO
"T:l= -55·C
60
50
40
30
-
.....
1.8
-
I
1.6
'"~
1.4
............
g
a:
1.2
::
'"
1.0
i
~
~
u
O.B
1""1
IOl:I!..
1"'"0
..
10
B
2
~
g
-
.20
6
S
4
3
TC"25"C
III
~
0.6
'"5 0.4
\
~ 0.2
>
---,VCj'IT
0.6 O.S I.
2.
4.
6.
Ie. COLLECTOR CURRENT-AMPERES
0.4
0.2
\
u
-vCE=IV
B.IO.
5 10-3
/
III
/
o
V
V
k::::!:===~
O.B
~
g
~ po-
0.6
Ii!!i
j
0.4
VCE(SAT)@ Ie/Ie' 10
tiIII
",IIIC
0.2
/
.1
.2
.3
VeE. BASE-EMITTER VOLTAGE - VOLTS
---,.....,..
o
.5
.4
0.1
.
--...
....
Tc "2!1"C
r--....
600
III
CI
:400
:o
-
.....
III
20
....
""'"- .........
(j
~
J /
g
CEiO
:J
..J
ooC . /
.5
:E
0ye FOR veE (SAT)
I
~
0
'"(jii:
'"uo
-.5
z
t.........
J
1.0
~
u
~
j!
le/lej 5
u
800
I
i
rVeE(sATI f---
4. SATURATION VOLTAGE
1000
'" 200
~!""'"
!f'
0.4 0.6 O.B I
2
4
6 B 10
Ie. COLLECTOR CURRENT - AMPERES
0.2
3. COLLECTOR CUTOFF REGION
ir
>-VeE(ONI@ VeE' IV
~
z
o
TJ= 2S·V
/
#
l:?'"
VBE(sATI@ le/le = lOl""-
/
/
/
I
Te =
/
V
100
1.2
/
/
TJ=IS0:7
S 10-2
5 10-1
5
Ie. BASE CURRENT - AMPERES
2. COLLECTOR SATURATION REGION
/
/
'--I-
--
r---
15.
1. DC CURRENT GAIN
VeE = 30V
Ie -15A
Ie -lOA
Ie' 5A
..J
I
~
Ie -I.OA
Ie" O.OIA
II.
r-.. r-- r-I'-
100
l:!
oC
-1.0
ti
ffi
-I.S
Q.
BO
-
:E
r-
.1
'";> -2.0
i
s
.2
.4
.6.8
I
~
2
4
6
8 10
.04
REVERSE BIAS VOLTAGE - VOLTS
5. CAPACITANCE
.06.0B.1
~
I-
V
- ~I
.2
.4.6.B I
2
Ie. COLLECTOR CURRENT - AMPERES
6. SATURATION VOLTAGE
TEMPERATURE COEFFICIENTS
459
L
-
?SoC
0YB FOR VBE
Ie leIS _
I-
60
... ?Soc't
_5SoC TO +?SoC
::>
~
~
4
6
B 10
50
40
I
~ 20
:Ii
C
"
I
10
a
8
6
I
g:
8j 2
"
"1'\
VCEX(MAX)
I
I
2
VeE. COLLECTOR-EM'TTER VOLTAGE - VOLTS
I~~
,
D44VHI
D44VH4
D44VH7
D44VHIO
I
"!-,-----:!!----1-+--'-~+~--~::----L--,40J"L..L..,60.I:-I-='801,-l-,l1OO
III
'oo·c
a:
!Z1&1
I
VeE (OFF) • -5V
TC~
L=200,.h
til 30
1&1'
3
4 5 6 78910
20
30 40 5060 80 100
VCE' COLLECTOR-EMITTER VOLTAGE - VOLTS
8. REVERSE BIAS SOA
7. FORWARD BIAS SOA
TYPICAL SWITCHING CHARACTERISTICS
0
1&1
til
c
1&1
:Ii
'000
800
600
-
400 f..-- Tc=25°C
ls_
I--- vCC'20V,VBE(OFF)=-5V
i=
C>
z 200 I--- IBI' I B2=Ic "0
:E
SEE FIGURE 16 FOR
~
TEST CIRCUIT
-~
j
til
I-
z
100
80
1&1
a:
a:
60
0
40
tr_
~
1,=
:::>
a:
td -
i0:?
1&1
...J
...J
20
0
0
~
4
6
B
Ic,COLLECTOR CURRENT (AMPERES)
2
~
9. RESISTIVE SWITCHING TIME
,..
800
-
600
.!
400
~
I-
-
- ----
t.
t.
t
0
0
0
Vee ~ IOV
l-
I
i",
-
1.0
I.
,.
t,.,A ~ ~
..!,~~
4
6
8
Ie' COLLECTOR CURRENT (AMPERES)
'0
~~
't.IOA
REfER TO F'GURE • FOR
NOR.AL SWITCH'NG TillES
ft',A
0.40
'5
V-
l /~
~
...,~
~
"",0: 7
0.'
t
2
---&
VII! IOf" • -!IV
Tc' 2!1'"C
1.2
i
Tc"'OO·C
- - T c o25·C
CLAMPEO 'NDUCTIVE LOAD I - IBole/I0.VBE(OFF)"-5V
Vee "20V, VCE(CLAMP)oeov
L o 200,.h
- I--SEE FIGURE '5 FOR
TEST CIRCUIT
l/
00
..,
I I
RESIST,vE LOAD
I .. ole/lO
1.4
!
-.1..- 1 - - - -
~
0
0
-- -.
--
0.2
0.4
0.'
0..
1.0
1.2
1.4
1.6
I..
RAT'O, 11,1112
10. CLAMPED INDUCTIVE SWITCHING TIME
11. SWITCHING TIME VARIATION WITH IB2
460
2.0
2.0
~
~
I
UJ
~
~
UJ
0.
~
.2
-'
.1
~ .OB
ff-
.06
J
II
b~? V I--'
~--:;
o·
~~~
~p'l.
~
~~
.........:
~
~
'"
80
n: 70
UJ
~
JLJL
0.
C
UJ
~I~J
,,":J~
~~~
o u"~
~ .04 fiii
":J'~
~
..........
~
60
50
""-,
.............
r--.....
'""'"
o
20
.02
BREAKDOWN
r--..... i"'---.SECOND
DERATING
r-.... i"--...
DERATING
o-e3Q
DUTY CYCLE = 1,11 2
..........
'~HERMAL
~ 40
z
:=
LJ
C!I
B10'
>
z
~
0
u
0
~
a:
:;)
~
CI)
I
111111
I
-1.0
-10.
j
I
I
VBE (SAT) @ IC/IB
=10
I, .II II!.! I
--I--::±:t
1
-.6
---
VeE (SAT! (q IC/IB =5,
-.4
I
I
1 1 I I LIL
1 I II ~.
VCE (SAT!@Ie/IB = 10 ___
-.2
o
-0.1
l'
I I
-0.2
-0.5
I C,
i'--..
I
I,
V
.> ".'"
~ ,.;"
I'--....
II
i-:::.-! ~
I L1""--:;::::::"
II
~
~~
-1.0
2.0
-5.0
-10.0
COLLECTOR' CURRENT, AMPS.
-20.0
4. SATURATION VOLTAGE
3. COLLECTOR CUTOFF REGION
TC :250 C
"-
600
~ 500
. . . t"-.C.bo
r-.
Go
400
"-
300
.......
~ ~CbO
r-.
CII
u
-5,A ;-
-.01
-.1
BASE CURRENT, AMPS
VBE (ONJ@VCE = -I~,,;:><
-.8
~
8
~
~fi,~
-1.4
VCE: -30V
i!
=-lOA
~
2. COLLECTOR SATURATION REGION
104
'"~
\
Ie
I'
-.2
>
0
-.0001
1. DC CURRENT GAIN
1,000
900
800
700
I'..
\
-.8
~
-.5
Ic "-15A
-1.0
- - - VeE"'OV
I
-.I
TC:250C
200
~
.5
1.0
2.0 3.0 5.0
10.
VR REVERSE VOLTAGE (VOLTS)
'"
t'- . . .
50
-.1
-.2 -.3
-1.0
3.0
Ic COLLECTOR CURRENT (AMPS)
80
5. CAPACITANCE
6. SATURATION VOLTAGE
TEMPERATURE COEFFICIENTS
465
-10.
-15.
SAFE OPERATING AREA
-SO
-30
-20
:
MAX DC
COLLECTOR CURRENT
10
~
8
io :
.' ... · . '. .......... . '. ,,
. ·. ................
'.
. ...... . . '.
.·
,
,
2 1 - - - - BONDING WIRE LIMITED
6
-.1
-I
-2
I
I
u
g
!rl
.J
~
200
600
400
f----
i=
60
40
20
8
III
200
:E
I
l-
i
- ---2
-
z
III
1_
II:
II:
60
u
40
:::>
20
.J
8
4
6
8
Ic,COLLECTOR CURRENT (AMPERES)
10
1.6
-
I I
I
~
4
6
B
Ie,COLLECTOR CURRENT (AMPERES)
2
15
9. RESISTIVE SWITCHING TIME
=
-
CLAMPED INDUCTIVE LOAD IB,=IeIlO,VBE(OFF)=SV
Vcc = 20V, VeE(CLAMP)=
RATED VCEX
L s 200fLh
~
!rl.J
-
Tc= 100·C
Tc =25·C
II:
Id
-
II_
II
100
BO
I-
,- .-
.-
Is
... ~ -
V-
u
Ul
IS
1---- -
:IE
III
Z
_ _I ! . - - -
100
BO
~
~
-=
f-----
lel"le2"leIi0
SEE FIGURE 16 FOR
TEST CIRCUIT
1000
_ 800
f----
VCC'-20V, VBE(OFF)= SV f----
......
:IE
III
If----
TC =2S"C
ffi
10. CLAMPED INDUCTIVE SWITCHING TIME
,--,---,---,---,---,,---r--,---,--"'---:;""
10
8
6
~
u 4
...
1.4 1---.j---+---+--+--I----~r_::..6-~+,......"'3
~
~ 2
III
:IE
Q)
i=
N
~ 1.2
III
'"lOA
:E
u
10 f- DUTY CYCLE = O.S
z 8
6
CI
0
~
~ 1.0 1--+--+---+-+---.::oI~--II___+-__+-+_---1
o
III
4
Q.
!
.J
CI
III
N
:J
:i O.B
II:
li!
0.6,
2
:IE
1----I---I--"7'1~41_-
I"IDA
I., lOA
I"IA
RESISTIVE LOAD - \ - - + - - - 1
la, "Ie liD, Vce" -IOV
ffi:z:
~
z
....~--+---+VBE(OFF)"5V,Te·25·C
III
0.2
0.1
~
~
]....0
10 0.0"
B
0.01
6
4 ~I- SINGLE PULSE
II:
Ilimrl'i 11111111
I-
11. SWITCHING TIME VARIATION WITH
j".~L
DUTY CYCLE D," 111t2
DUTY CYCLE CURVES APPLY
FOR POWER PULSE TRAINS.
TIME I, REPRESENTS PULSE
z
CI 2
0.4 '---O±l:2;----;0;'-..4:---=0l::.6-""0:t:.B;---;'L,;.0:---~I.2.-----;7-7;;---;I';;.B:---......;;2.0
RATlO,IBI/I BZ
...flSL
~~
in
I.,IA
~
10-6
10-5
10-4
10'3
I, TIME (SEC.)
10-2
12. TRANSIENT THERMAL RESPONSE
182
466
I II
10-1
100
~
90
~ ..........
-60
..........
"""-
BO
r-....
UI
"
...........
"~HERMAL
20
10
10
20
30 40
Ml
60
70
r-....
80
90
100
w
111 -40
::>
o
T C =2S·C
1\
0:
'" "
g
Iil
'" "'"
~
".,:z
........ ........
DERATING
~
00
~ -50
r---... r--.....
SECOND BREAKDOWN
DERATING
-30
1'\
-l
-l
oo
l.:
"-
" -20
w
11.
""
110 120 130 140 150
Tc, CASE TEMPERATURE,·C
-10
1.01.
0.1
13. POWER DERATING FACTOR
1.0
PULSE WIDTH, MSEC.
10.0
100.
14.· MAXIMUM SINGLE PULSE
COLLECTOR CURRENT
TEST CIRCUITS
+SV
-Vcc
+5V
-Vcc
01
RESISTIVE SWITCHING
1
L-200",H
i b2
t---K~I--oQ -VCECCLAIiIPI
RL
.5n
Rc
=~,
Rs
=- -0.5
NON-INDUCTIVE
Ic
VB
Ibl
RB
OUT
INDUCTIVE SWITCHING
VB
Rs
= i;
TRANSITION TIME 90"10 lSI
TO 90"1. I S2 LESS THAN
10 N.S.
.511
"ON" PULSE WIDTH AND Vcc
ADJUSTED FOR DESIRED PEAK Ic.
O2
r
TRANSITION TIME FROM
90"10 lSI TO 90"10 IS2 LESS
THAN 10 N.S.
bl
-=
-Va
16. RESISTIVE SWITCHING
15. INDUCTIVE SWITCHING AND VCEX
467
468
VERY HIGH SPEED
D44VM Series
NPN POWER TRANSISTORS
30- 80 VOLTS
8 AMP, 50 WATTS
COMPLEMENTARY TO THE D45VM SERIES
The D44VM is a NPN power transistor especially designed for
use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where
very fast switching and low-saturation voltages are n~cessary.
This device is characterized with performance information
which relates directly to switching, including 100° C maximum
limits specified for switching times, saturation voltages, and
leakage currents.
NPN
COLLECTOR
EMITIER
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
:1~g\!:~~\~
.05511.391
1
.04Bll.nl
.--- .
Features:
.26516.731
.24516.221
• Very Fast Switching ts :::;;; 500 ns resistive
tf:::;;; 75 ns
/
.T
:1:~:~:~:\DIA.
• Very Low VeE(sat):::;;; O.4V @ Ie = 4A
+
• High Gain HFE ~ 40@ Ie = 4A
~
.13013.31
'"
CASE
:rEMPERATURE
/E~5~~~CE
:;~;:~:~;\----,
.22015.591
-T
TERM.l
•
t--t--I-----tt-ir---'-l
ft~IIII"!rr-...,
~iJI
.500112.7IMIN.
TERM.2
TERM.3
.0331~.B41
.02710.691
.1~.10512.671
.05511.391-/
.04511.141
maximum ratings (TA
=25° C)
.10712.721
.08712.211
~ ".09512.411
1--'
I--
.21015.331
.19014.B21
'.°0215111°0..533811
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
- Peak (1)
Base Current - Continuous
- Peak (1)
Total Power Dissipation @TC = 25°C
@TC= 100°C
Derate above 25° C
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO(sus)
VCEX
VCEV
VES
IC
ICM
18
IBM
Po
TJ, TSTG
D44VM1
30
30
50
D44VM4
45
45
70
D44VM7
60
60
80
7
8
20
2
5
50
20
0.4
D44VM10
80
80
100
UNIT
V
V
V
V
A
A
Watts
W/oC
-55 to +150
°C
thermal characteristics
SYMBOL
CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) Pulse measurement condition PW';; 6.0 ms.
469
R8JC
R8JA
MAX
2.5
74
UNIT
°C/W
°C/W
TL
235
°C
electrical characteristics (T c
I
=25° C)
(unless otherwise specified)
I
CHARACTERISTICS
SYMBOL
MIN
MAX
30
45
60
80
-
UNIT·
off characteristics(1)
Collector-Emitter Sustaining Voltage(1) (IC =100mA, Is
D44VM1
D44VM4
D44VM7
D44VM10
Collector-Emitter Voltage(2)
(Ic =3A, VCLAMP =Rated VCEX, Tc:S;; 100°C)
D44VM1
D44VM4
D44VM7
D44VM10
Collector Cutoff Current
(VCEV =Rated Value, VSE(off) =4.0V)
(VCEV =Rated Value, VSE(off) =4.0V, Tc =100°C)
Collector Cutoff Current
(VCE =Rated VCEV, RBE =50 n, Tc =100°C)
Emitter Cutoff Current (VES =7V, Ic =0)
=0)
VCEO(sus)
V
VCEX
-
30
45
60
80
ICEV
-
pA
-
10
100.
-
100
pA
10
pA
ICER
lEBO
V
second breakdown
Second Breakdown with Base Forward Biased
Second Breakdown with Base Reverse Biased
SEE FIGURE 7
SEE FIGURE 8
FSSOA
RSSOA
on characteristics(1)
DC Current Gain
(Ic =4A, VCE =1V)
(Ic =6A, VCE =1V)
Collector-Emitter Saturation Voltage
(Ic =4A, Is =0.2A)
(Ic =6A, Is =0.3A)
(Ic =8A, Is =0.8A, Tc =100°C)
Base-Emitter Saturation Voltage
(Ic =4A, Is =0.2A)
(Ic =4A, Is =0.2A, Tc =100°C)
hFE
VCE(sat)
VBE(sat)
dynamic characteristics
-
40
20
-
-
0.4
0.6
1.0
-
1.2
1.2
V
V
Typical
Current-Gain - Bandwidth Product
(Ic =0.1A, VCE =10V, ftest =1 MHz)
Output Capacitance
(VCS =10V, IE =0, ftest =1 MHz)
fT
50
MHz
Cos
70
PF
switching characteristics
Maximum
Resistive Load (See Figure 16 for Test Circuit)
Delay Time
VCC == 30V, IC =6A
Rise Time
IS1 =IS2 =0.6A
Storage Time
tp =25 psec
Fall Time
Tc
td
tr
ts
tf
Inductive Load, Clamped (See Figure 15 for Test Circuit)
Storage Time
VCE(CLAMP) =30V, Ic =6A
Fall Time
IS1 =IS2 =0.6A, VSE(OFF) =-5V
ts
tf
500
600
70
100
Typical
nsec
nsec
Storage Time
Fall Time
ts
tf
340
40
nsec
nsec
L
=200 ph
(1) Pulse Duration = 300 Jlsec, Duty Factor OS;; 2%.
(2) See Figure 15 for Test Circuit.
470
25°C
30
250
500
75
100°C
40
350
600
250
430
57
nsec
nsec
nsec
nsec
TYPICAL DC CHARACTERISTICS
"...
III
~
o
TJ "ISO'C
200 ' - -
II:
II:
::>
'-'
'-'
Q
.;.
...
-~
T~2S·~I.
J "-SSoC
Z
I/J
"' "'
2.6
400
z
C
,
2.B
1,000
800
600
100
80
::r
I/J
2.2
o
>
loB
"~
..........
~ ...........
II:
...
t:
I/J
:l!
I/J
60
a:
40
~
\
- - VCE =1.0V
:r
---VCE"S.OV
U
.4
'"
>
0.2
0.4
0.6
1.0
4.0
2.0
6.0
1.0
.6
U
10
0.10
\
1.2
.B
10
\
\
.2
o
.002
.004 .006 .01
......
2
1.0
0.8
0.6
.04
...'-'
...J
...J
0
'-'.
'"
>u
.s,. 40
,sf'lcllel
I/J
0
TC = 2SoC
4.0
1l,=Ic/iel
TC '2S oC
::/
2.0
.sf=20~ V
0.2
II:
I
.B"I~
~ ~f=IO
1.0
O.B
...........
~
.01
0.1
0.4
....-
...............
0.2
0.2
0.4
0.6
1.0
2.0
4.0
6.0
0.1
0.1
10
0.2
1,000
800
t
~
600
I
;!
U
..........
>
:;
C~b
~
«
'-'.
'-'
2.0
V
loS
...J
1.0
...
.S
II)
I/J
r--
U
;;:
...
oe
-;P
4>vc FOR VCE(SAT)
Ic/le= 10
Z
o
~
I-
_SSoC TO +2SoC_
-
I-
I/J
0
60
-....;,.
40
'-'
......
-.S
I/J
II:
:J
Cob
~
II:
11.
:l!
20
.1
III
1.0
...
4>ve FOR VeE
-loS
I/J
>
-&-
10.0
100
-2.0
-
0.4 .06 .OB .1
le~
I
.2
~
-
.4
.6
_SSoc TO +2So c
471
-
I
.B I
2
FIGURE 6. SATURATION VOLTAGE
TEMPERATURE COEFFICIENTS
FIGURE 5. CAPACITANCE
/
7.<;,oe
IC,COLLECTOR CURRENT-AMPERES
VR,REVERSE VOLTAGE-VOLTS
./
Ooe
-1.0
I/J
TC=2SoC
10
V
/
ooe
~
200
100
80
6.0 B.O 10
4.0
2.0
0
I/J
'-'
Z
0.6 O.B 1.0
FIGURE 4. VBE(SATI VS. IC
FIGURE 3. VCE(SATI VS. IC
F--::
0.4
IC,COLLECTOR CURRENT-AMPERES
IC ,COLLECTOR CURRENT-AMPERES
Q.
;;:
.B,=40~/
0.6
.02
400
1.0
6.0
-
0.4
.10
.08
.06
I/J
0.4 0.6
0.2
10
>
II:
0.1
ao
0
I/J
.04 .06
FIGURE 2. COLLECTOR SATURATION REGION
2.0
:r
"~
.02
le,BASE CURRENT-AMPERES
III
I/J
-- -
\
.001
FIGURE 1. DC CURRENT GAIN
~
1\
\
IC,COLLECTOR CURRENT·AMPERES
0
TC'2SoC
\
\
\
1.4
...J
...J
"'
- r
\
\
1.6
u
o
\
"
IT
IC=BA
2.0
I/J
20
\
1111
I
2.4 - I C ' IA r-IC'2 .SA r--IC=SA
4
·6
B 10
SAFE OPERATING AREA
....en
.......:IE
,
....
Z
....
II:
II:
~
-
u
....
~
~
0
-
.
D44VMI ~
D44VM4
A
D44VM7 - D44VMI0
t-- TC.a25"C
~
en
....
II:
10
~
B
.......
SECOND BREAKDOWN
\
LIMIT
VeEO(MAX).-'
1.0
.B
.6
'-!.
~
~
DC
~
_ -- BONDING WIRE LIMIT \. \.
_____ THERMAL LIMIT
I\.\.
2.0
DUTY CYCLE SI"I.
6
4
j!.
\.
~
~ 1'\
....-
II:
~
:.:
j
D44VM4
D44VM7
2
D44VMI0
1\1\\
40
20
D44VMI
8
\.
"~
4
~
~
1\
B 10
6
u
~
II
~
z
....
II:
r-
III
.2
2
TC'IOO'C
'BI='B2='c/10
VBE(OFF) =-5V
L-200 I'H
I p '75I'SEC
..... ..,.v-IO I'SEC
. . . . .1
4.0
::;)
~
~msEd~ 'j~~C
10
B.O
6.0
II:
U
II:
--........ 100l'SEC
. .1.1_~
20 f--
60 BO 100
10
VCE,COLLECTOR-EMITTER VOLTAGE-VOLTS
30
20
50
40
70
60
80
VCE(CLAMP),COLLECTOR-EMITTER CLAMP' VOLTAGE -VOLTS
FIGURE 7. FORWARD BIAS SOA
FIGURE 8. CLAMPED REVERSE BIAS SOA
TYPICAL SWITCHING CHARACTERISTICS
u
~
!Ii
1=
BOO
1,000
600
~~~~~~~~~~~~~~~~~~~~~~~
-
400 I -- -
--
~
% 200
~
__ Is
:.:
TC =100' -11-----t-----"'i-l~"'-:--It----"'-'-I--:::::-+-_t_-+---t
TC =25'
's - I - -
I'
_
-
I:::
~
60
U
40
::;)
~
~
~
....
::IE
j::
If----- - - - -
t--
--_-I--
--
~
8
~
1--1--
~
en
-
....Z
UJ
II:
II:
100
BO
60
___ -.!.d_-_-+-_---t---t--t--t--t--+-t-1 ~
rr:::::======~~~~:j::~~~~~~.-~~.~-~-~~
Vee=30V
Ip=25I'SEC
SEE FIG. 16 FOR
TEST CIRCUIT
U
UJ
2.0
4.0
6.0
~
20
...J
...J
--- ---
-
I--
o
U
10L------~~--~--~-~-~-~~~~
1.0
t---_
t-40 t-t--
U
II:
I
B.O
10
10
le=~
'"
i=
'":E
".-
1.25
z
u
....
1.0
~
0
....
N
Ie=BA/
.75
:::i
le.l4A /
-1-t-i %
200
-_
... j:..:::::::r':'-!--"
~ If
~ ~I ~
....
z
.... BO~_I!. __
II:
II:
en
1.0
1
1.2
1
1.4
1.6
I.B
FIGURE 12. FALL TIME VARIATION WITH 182
472
2.0
100
....~
10
8.0 ~
6.0
4.0
o
2.0 f-oUJY CYCLE
~
11.1
Z
4
o
11.1
0..
~
;;i
:::I!
a:
11.1
:l:
....
....
Z
'"inz
4
I=:=F
1.0
.8
.6
.4
.2
11.1
~60
-
0..
~
I~
.08
a:
....
III: 70
~
o
......
11.150
~
!i
-
-
105
10-2
10-3
r--....
DERATING
~
"'-
10
o
o
10-1
10
20
30 40
50
60
70
r-.... ............
~HERMAL
20
III rmr III
10-4
..........
"-
ae3Q
DUTY CYCLE -'I /12
.01
106
SECOND BREAKDOWN
............ ,DERATING
o
~J
.02
r-.....
~40
.JLJL
~~
..........
'"'" "
BO
...-
.06
.04
~~ I'--......
90
80
90
'"
r-....
"-
FIGURE 14. POWER DERATING FACTOR
FIGURE 13. TRANSIENT THERMAL RESPONSE
TEST CIRCUITS
L' 200f'H
+--t*--... ve~AMP
DI
DT230B
FOR SW. TIMES AND RBSOA
FOR SUSTAINING VOLTAGE
-5V
Rs' VaB
IBI
"ON" PULSE WIDTH AND Vee
ADJUSTED FOR DESIRED PEAK Ic.
TRANSITION TIME FROM
90% lal TO 90% la2 LESS
THAN IOnS.
FIGURE 15. INDUCTIVE SWITCHING AND VCEX
R~' ~~c
Ra'
, NON INDUCTIVE
Vas
1iiI- 0.5
TRANSITION TIME FROM
90% lSI TO 90% la2 LESS
THAN IOnS.
-5V
FIGURE 16. RESISTIVE SWITCHING
473
"
100 110 120 130 140 150
.
Tc, CASE TEMPERATURE,·C
'I-PULSE WIDTH-SECONDS
474
VERY HIGH SPEED
PNP POWER TRANSISTORS
D45VM Series
-30 - -80 VOLTS
-8 AMP, 50 WATTS
COMPLEMENTARY TO THE D44VM SERIES
The D45VM is an PNP power transistor especially designed for
use in switching circuits such as switching regulators, highfrequency inverters/converters and other applications where
very fast switching and low-saturation voltages are necessary.
This device is characterized with performance information
which relates directly to switching, including 100°C maximum
limits specified for switching times, saturation voltages, and
leakage currents.
PNP
COLLECTOR
~'-E9
EMITTER
:~~g\!:~~\rt
.05511.39)
I
.048I1.n)
....---
Features:
.26516.73)
:245i6.22i
• Very Fast Switching ts ~ 500 ns resistive
tf ~ 75 ns
t--+---+----lfr--
_
CASE
TEMPERATURE
REFERENCE
/ " POINT
:~~~\~:~~l
• Very Low VeE(sat) ~ O.4V @ Ie = 4A
~
• High Gain HFE ~ 40 @ Ie = 4A
....n+TT1r-'.13013.3)
--,.22015.59)
~i~)
-:t
TERM.l
-tf;'~IIII4n--,
TERM.2
.500112.7)MIN.
.055 1.39
.0451.1
TERM.3
.0331~
"~.10512.67)
.10712.72)
.08712.21)
.0271~~ ""09512.41)
.05511.39)
_I
.04511.14)--'
maximum ratings (T A = 25 0 C)
1+-.
I--
.21015.33)
.19014.82)
.021(0.53)
.01510.38)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Sase Voltage
Collector Current - Continuous
- Peak (1)
Base Current - Continuous
-Peak (1)
Total Power Dissipation @ Tc = 25°C
@Tc= 100°C
Derate above 25° C
Operating and Storage Junction
Temperature Range
SYMBOL
VCEO(sus)
VCEX
VCEV
VEBO
Ic
ICM
IB
IBM
Po
TJ, TSTG
D45VM1
-30
-30
-50
D45VM4
-45
-45
-70
D45VM7
-60
-60
-80
-7
-8
-20
-2
-5
50
20
0.4
D45VM10
-80
-80
-100
UNIT
V
V
V
V
A
A
Watts
W/oC
-55 to +150
°C
thermal characteristics
SYMBOL
CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
ROJC
ROJA
h
(1) Pulse measurement condition PW"; 6.0 ms.
475
MAX
2_5
74
UNIT
°C/W
°C/W
235
°C
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I
CHARACTERISTICS
SYMBOL
MIN
MAX
UNIT
off characteristics(1)
Collector-Emitter Sustaining Voltage(1) (IC =-100mA, Is =0)
D45VM1
D45VM4
D45VM7
D45VM10
Collector-Emitter Voltage(2)
(Ic =3A, VCLAMP =Rated VCEX, TC:S:;; 100°C)
D45VM1
D45VM4
D45VM7
D45VM10
Collector Cutoff Current
(VCEV =Rated Value, VSE(off) =-4.0V)
(VCEV = Rated Value, VSE(off) =-4.0V, TC = 100°C)
Collector Cutoff Current
(VCE =Rated VCEV, RSE =50 .11, Tc =100°C)
Emitter Cutoff Current (VES =7V, Ic =0)
VCEO(sus)
-
-30
-45
-60
-80
V
VCEX
ICEV
ICER
IESO
V
-30
-45
-60
-80
-
-
-10
-100
pA
-
-100
pA
-10
pA
second breakdown
Second Breakdown with Base Forward Biased
Second Breakdown with Base Reverse Biased
SEE FIGURE 7
SEE FIGURE 8
FSSOA
RSSOA
on characteristics(1)
DC Current Gain
(Ic =-4A, VCE =-1V)
(Ic =-6A, VCE =-1V)
Collector-Emitter Saturation Voltage
(IC =-4A, Is =-0.2A)
(IC =-6A, Is =-0.3A)
(IC =-8A, Is =-0.8A, Tc = 100°C)
Base-Emitter Saturation Voltage
(IC =-4A, Is =-0.2A)
(IC =-4A, Is =-0.2A, T C = 100o G)
hFE
VCE(sat)
VSE(sat)
40
20
-
-
-0.4
-0.6
-1.0
-
-1.2
-1.2
V
V
dynamic characteristics
Typical
Current-Gain - Bandwidth Product
(IC =-O.1A, VCE =-10V, ftest = 1 MHz)
Output Capacitance
(VCS =-10V, IE =0, ftest = 1 MHz)
fT
50
MHz
Cos
70
PF
switching characteristics
Maximum
Resistive Load (See Figure 16 for Test Circuit)
Delay Time
VCC =30V, Ic =6A
Rise Time
IS1 = IS2 =0.6A
Storage Time
tp =25 psec
Fall Time
Inductive Load, Clamped (See Figure 15 for Test Circuit)
Storage Time
Fall Time
Storage Time
Fall Time
tr
ts
tf
25°C
30
250
500
75
100°C
40
350
600
250
nsec
nsec
nsec
nsec
ts
500
600
nsec
tf
70
100
nsec
ts
tf
Typical
340
430
40
57
nsec
TC
td
=30V, IC =6A
IS1 = IS2 =0.6A, VSE(OFF) =-5V
VCE(CLAMP)
L
-
=200 ph
(1) Pulse Duration = 300 /lsec, Duty Factor';;; 2%.
(2) See Figure 15 for Test Circuit.
476
nsec
I
TYPICAL DC CHARACTERISTICS
2.B
I
2.6
rn
~
~
L&J
'"~
6>
a:
ci:
1.0
.8
-'
.6
u
.4
>
.2
o-'
...u
\
\
1.6
U
L&J
- TC' 2So C
\
I.B
1.2
-
,
2.0
::f
g
Ic· 8A
le' 2. 5 A -I c- SA'
II I
\
2.2
1.4
L&J
III
II
2.4 r---Ic- IA
L&J
l-
t::
,
III II
\
\
\
\
\
\
o
.001
.002
...........
.004 .006 .01'
.02
.04 .06
0.1
0.2
0.4 0.6
1.0
Ie .BASE CURRENT-AMPERES
Ie. COLLECTOR CURRENT-AMPERES
FIGURE 2. COLLECTOR SATURATION REGION
FIGURE 1. DC CURRENT GAIN
-10.0
10
ao
Ul
If-4
II
-1.0
~
~
L&J
B=20
'"
;!
IR=IC '--
~
/'V
I
..
~
;;;
u
> -.10
,/
TJ =25°C
i
0.6
~
rn
0.2
0.1
0.1
0.2
~
-..
Ul
600
.
D.
13
u
U
4.0
6.0 8.0 10
Ul
.5
I
1.0
13
ii:
...
0
0
-.5
~
~
"C
_S50C TO +25 _
I'
~oe,
4>vc FOR VCE (SAT)
Ic/le' IO
L&J
r--
./
o°e,
~
:.-
i--
l - i-
L&J
......
40
u
.........
L&J
a:
Cob
=>
lia:
L&J
II.
Tc= 25°C
::f
20
10
1.5
z
100
BO
60
2.0
2.0
~
0
>
:::;
-'
I-
Z
if
-2.0
100
~
0.4 .06 .OB .1
le'~ ::;..;; ~
---·C
_SS"C TO +2~
I
.2
.4
.6
.8 I
I
I
2
46
IC.COLLECTOR CURRENT-AMPERES
VR.REVERSE VOLTAGE-VOLTS
FIGURE 6. SATURATION VOLTAGE
TEMPERATURE COEFFICIENTS
FIGURE 5. CAPACITANCE
477
./
'l.~oe,
4>ve FOR VeE
-1.5
L&J
I-
10.0
./
<:;o0e,
-1.0
-B 10
SAFE OPERATING AREA
20
en
a:
"-
10
S.O
6.0
«I
4.0
'"
'"::I
IZ
'"a:a:
2.0
r----
~msEd~
a:
0
I-
:.l
...J
...J
0
~
.!!
..... j
-':-.,
'"~a:
DC-"'"'"'
~
_ -- SONDING WIRE LIMIT \. \.
_ - - - - - THERMAL LIMIT
I
,,\
1.0
.S
.6
D45VMl
D45VM4
I- DUTY CYCLE SI"I.
.2
I
2
I
46
~
'"~
-
::;)
~
\
a:
~
u
'\.
'"
4
...J
...J
o
1,\
u.
1\
20
6
u
1\
SIO
8
t!.
z
~ 1\
D45VM7 - - D45VM10
i-- TC"2S"C
'BI"'B2='c"0
VBE (OFF)" -SV
L=200 /LH
I p "75/LSEC
10
:n
SECOND BREAKDOWN
\
LIMIT
VCEO(MAX)-,
.4
TC"IOO"C
...,-IO/LSEC
........ 100/LSEC
--t
::;)
u
.•l.l~~ r---.J{JEC
~I\
.!i
-
"
D45VM10
D45VM7
D45VM4
D45VMl
2
1\
10
406080100
VCE,COLLECTOR ·EMITTER VOLTAGE-VOLTS
50
40
30
20
80
70
60
VCE(CLAMP),COLLECTDR-EMITTER CLAMP VOLTAGE -VOLTS
FIGURE 7. FORWARD BIAS SOA
FIGURE 8. CLAMPED REVERSE BIAS SOA
TYPICAL SWITCHING CHARACTERISTICS
-
1,000
SOO
en 600
u
'"f
'"i=2
'"z
:;:
U
l-
ien
lZ
400
Tc=IOO·
TC =25"
--
~---100
so
60
u
40
::;)
:.l
...J
--
1----
-
200 ~If
'"a:a:
a:
~
--
I;:_I!.
t---
__
---- ----- -...
s
~
f
::E
'"i=
Oo
Oo
t-
'"
:;:
F,,:.::: ~, ~
20
I-
~
-Oo
100 to-80
IZ
'"a:a:
VCC=30V
'BI=I B2 =I e "0
...J
0
U
1.0
.-
-lIp=25/LSEC
I
2.0
60
t--40 t--t---
~
-- .-
u
'"
6.0
8.0
20
...J
...J
SEE FIG. 16 FOR
TEST CIRCUIT
4.0
--
1.50
~
1.0
i
Ie=8A_
en
Q
'":::;
.75
-/
~
~
N
')4A/
«
::E
a:
10
10
0
z
.2
.4
.6
'c/IBI=IO
VBE (OFF)=-5V
I p =25 /LSEC
1.0
If
-
-
'BI='B2=lc "0
L=200 /LH,VBE(OFF)=-5V
Ip =25 /LSEC
I--
I
I
2.0
4.0
6.0
8.0
I
10
~-
1.25
1.0
--
J
I
I
1.2
1.4
1.6
Ic=8A-
'":::;
.75
::E
.50
N
a:
0
z
r---
~
-;::;:r
/
I
FIGURE 11. STORAGE TIME VARIATION WITH 182
.2
.4
.6
.8
I
t-----
VBE(OFF)" -5V
I p =75 /LSEC
.25
o
'c"8A
I
'cIIBI=IO
REFER TO FIG. 10 FOR
NORMAL SWITCHING TIMES
2.0
~ r'""
INDUCTIVE LOAD
Tc =25"C
L "200 /LH
VCE(CLAMPEDI"3OV _
'c=4A/
«
-
1.8
ien
Q
/.
"...
'":;:z
VCE(CLAMPED) =30V _
.8
--
1.50
'"i=::E
A=sA
INDUCTIVE LOAD
Tc =25·C
L=200 /LH
.25
o
~
~
V
l-
REFER TO FIG. 10 FOR
NORMAL SWITCHING TIMES
..
1.75
u
.50
rOo
FIGURE 10. CLAMP INDUCTIVE TURN·OFF TIME
IC"5-
./
r--
Ie,COLLECTOR CURRENT-AMPERES
1.75
y
Is
----Te=IOO·C
Tc=25·C
VCE(CLAMP
o
U
FIGURE 9. RESISTIVE SWITCHING TIME
1.25
-----
--
le,COLLECTOR CURRENT -AMPERES
'"i=::E
'":;:z
--
200 t-- __
U
I-- f--
a:
-
..
400
::;)
'-
- -
600
z
Ir
__ ..!.d_
-
1,000
800
:.l
J Is
u
t-
10
-
- -- t-
1.0
1
1.2
1
1.4
1.6
1.8
FIGURE 12. FALL TIME VARIATION WITH 182
478
2.0
100
10
B.O
6.0
4.0
.06
.04
10-6
...
~
o
... 50
!ia:
rLIL
o
a-t 30
20
DUTY CYCLE-II/!2
10-3
10-2
"i'.
BREAKDOWN
........... r--...SECOND
DERATING
.............
...........
...........
",HERMAL
DERATING
10-1
o
o
10
20
30
40
"
SO 60 70 BO 90 100 110
Tc • CASE TEMPERATURE. ·C
i'..
~
FIGURE 14. POWER DERATING FACTOR
TEST CIRCUITS
Vee
Vee
L=200J1--+ VeLAMP
01
DT230B
FOR SW. TIMES AND RBSOA
FOR SUSTAINING VOLTAGE
Rs = Vae
lei
"ON" PULSE WIDTH AND Vee
ADJUSTED FOR DESIRED PEAK
TRANSITION TIME FROM
90% Ie, TO 90% le2 LESS
THAN IOn S.
-SV
FIGURE 15. INDUCTIVE SWITCHING AND VCEX
Vee
Vee
!
RL
Ie,
0.5.n
RL
,-
TRANSITION TIME FROM
90% Ie, TO 90% 182 LESS
THAN IOnS.
O.S.n
le2
• NONINDUCTIVE
Vee
Re="'iEi7 -0.5
Re
!
= ~~e
'::'
-5V
FIGURE 16. RESISTIVE SWITCHING
479
Ie.
~
120 130 140 150
'I-PULSE WIDTH-SECONDS
FIGURE 13. TRANSIENT THERMAL RESPONSE
...........
~
10
III
1111111
10-4
...........
'"
'" 40
~J
SINGLE
PULSE
10-S
.........
~60
Q.
.02
.0 I
a: 70
~
........
~
~
~02
.01
I~ 1=
.08
-
,
~~
BO
2.0 r-oUTY CYC LE
.S
1.0
.B
.6 - . 2
.4 - .1
.2
~
90
480
D46TQ1
D46TQ2
HIGH SPEED
NPN POWER TRANSISTORS
400-450 VOLTS
12 AMP, 110 WATTS
The D46TQ1 and D46TQ2 are designed for high-voltage,
high-speed power switching inductive circuits where fall
time is critical. They are particularly suited for 115 and 220V
switch-mode applications such as switching regulators,
inverters, motor controls, solenoid/relay drivers and deflection circuits.
NPN
COLLECTOR
EMITTER
CASE STYLE TO-218
Features:
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• VCEO(sus} 400V and 450 V
• 700 V blocking capability
• SOA and switching information.
.156(3.961
MIN.
.461(11.7091
---L
.14713.7341~~==;==;=;""
MAX.
~
1
.048(1.219)
NOM.
00+
.622(15.798)
2
3
~p
1
~...J
.205(5.207)
.450(11.4301
.410(10.414)
maximum ratings (TA = 25° C)
l
.018(.4571
NOM .
.095(2.413)
MIN .
(unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)(l)
Base Current - Continuous
Peak (Non-Repetitive)(l)
Total Power Dissipation @Tc = 25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
D46TQ1
400
650
6
12
24
6
12
110
0.88
D46TQ2
450
750
6
12
24
6
12
110
0.88
UNITS
Volts
Volts
Volts
A
TJ, TSTG
-65 to +150
-65 to +150
DC
R8JC
1.1
1.1
°CIW
TL
275
275
DC
SYMBOL
VCEO
VCEV
VEBO
IC
ICM·
IB
IBM
PD
A
Watts
WIDC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
(1) Pulse Test: Pulse Width
=5ms. Duty Cycle ~ 10%.
481
electrical characteristics (T c
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
VCEO(sus)
400
450
Collector Cutoff Current
(VCE = Rated Value, V8E(OFF) = 1.5V)
ICEV
Emitter Cutoff Current
(VE8 = SV, IC = 0)
CHARACTERISTIC
I
TYP
MAX
UNIT
-
-
-
Volts
-
-
1
mA
IE80
-
-
1
mA
hFE
8
(5
-
40
30
-
1
1.5
3
V
off characteristics(1)
Collector-Emitter Sustaining Voltage
(IC = 10mA, 18 = 0)
04ST01
04ST02
on characteristics(1)
DC Current Gain
(IC = 5A, VCE = 5V)
(Ic = 8A, VCE = 5V)
Collector-Emitter Saturation Voltage
(Ic = 5A, 18 = 1A)
(Ic = 8A, 18 = 1.8A)
(Ic = 12A, 18 = 3A)
VCE(Sat)
Base-Emitter Saturation Voltage
(IC = 5A, 18 = 1A)
(Ic = 8A, 18 = 1.SA)
V8E(sat)
-
-
-
-
-
1.2
1.6
V
td
-
0.06
0.1
p's
-
0.45
1
1.3
3
0.2
0.7
-
0.92
2.3
0.12
0.7
switching characteristics
Resistive Load
Delay Time
VCC = 125V, Ic = 8A
Rise Time
181 = 182 = 1.SA, tp = 25 p's
tr
Storage Time
Duty Cycle < 1%
ts
Fall Time
tf
Inductive Load, Clamped
Storage Time
(Ic = 8A, VCLAMP = 300V)
tsv
Crossover Time
(181 = 1.SA, V8E(OFF) = 5V
TC = 100°C)
tc
(1) Pulse Test: Pulse Width - 300",s Duty Cycle:5 2%.
482
p's
D54A7D
NPN POWER DARLINGTON
TRANSISTORS
100 VOLTS
7 AMP, 30 WATTS
Designed for high power switching applications,
hammer drive, pulse motor drive applications.
Features:
• High DC Current Gain:
hFE = 2000 (Min.) (at VCE = 3V, IC =3A)
• Low Saturation Voltage:
VCE(sat) = 1.5\1 (Max.) (at IC
CASE STYLE TO-22D1S
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.406110.31 MAX.
=3A)
• Complementary to D55A7D
• Isolated TO-220 package
-I--_\lnl7t1lr-·04711.21
.05511.4)
.03012.541 :
:gci~I~};1
.10012.541 ± .01010.251--1-+--+-.10012.541 ± .01010.25)
EQUIVALENT CIRCUIT
COLLECTOR
~--------------,
BASE
O---i-:-t-----i
I
I
'" 5kO
L _ _ _ _ _
_I-......J\f'~=-::'t-=-'.
EMITTER
maximum ratings (TA = 25° C)
(unless otherwise specified)
SYMBOL
VCEO
VC80
VE80
D54A7D
100
100
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
7
A
Base Current - Continuous
18
0.2
A
Total Power Dissipation @TC = 25°C
PD
30
Watts
TJ, TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Operating and Storage
Junction Temperature Range
thermal characteristics
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
260
483
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
V(BR)CEO
100
-
-
ICBO
-
-
100
p.A
lEBO
-
-
3.0
mA
MAX
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =50mA)
Collector Cutoff Current
(VCB =100V)
Emitter Cutoff Current
(VEB =5V)
Volts
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE9
on characteristics
DC Current Gain
(Ie = 3A, VeE = 3V)
(Ie =7A, VeE = 3V)
hFE
2000
1000
-
15000
-
-
-
0.9
1.2
1.5
2.0
Volts
-
Collector-Emitter Saturation Voltage
(Ie = 3A, Is = 6mA)
(Ie =7A, Is =14mA)
VCE(sat)
Base-Emitter Saturation Voltage
(Ie = 3A, Is = 6mA)
VSE(sat)
-
1.5
2.5
Volts
ton
-
0.8
3.0
-
fJs
-
2.5
-
switching characteristics
Turn-on Time
Vce = 45V
Storage Time
IB1 = IB2 = 6p.A
Fall Time
Duty Cycle S; 1%
tstg
tf
10
10
COMMON EMITTER
Te=2S·C
COMMON EMITTER
Te= l00·C
8
8
~
.Y
!zw
./
6
~
II:
II:
::>
u
~
...-
;.....--
4
w
-'
-'
0
.Y
1.0
!zw
6
~
II:
0.6
~
I
~~
w
I
le= 0.2 mA
.....
0
u
0
I
10
2
o
12
J
o
0
4
6
8
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
0.4
-'
le=0.2mA
4
~
0.6_ I -
~/
4
-'
0.4
I
0.8.......
I"
LY" -...-
::>
U
I
o
~
II:
II:
0.8
r
u
1.0
~
1.2
V
r
II:
u
1.4
Ie - VeE
FIG. 2
484
Ie - VCE
10
12
10
20,000
COMMON EMITIER
Te =-SO'C
10,000
""~ [II
i4.0
?
tzw
a:
a:
:>
0
a:
0
t-
-
C. ""'"
.Y
6
VI-"'"
f-
.;;...
w
I""""
..... 1
u.
.c
3.0
Z
;;:
2.5
3,000
Cl
f-
t-
2.0
Z
w
oW
1.5
0
0
Cl
0
0
J1
V I
a:
a:
:>
-'
-'
.~
"''A
5,000
.....
~(j
,
UJ
-'
-'
0
0
r- F
0.5
f-- f-
25
100
--
...-
=-SO'C
~
10'
"'~
I-
0.4
=-50'C
25
100
I
0.3
Te
--
I-- I--'
~
"'"
0.5
3
10
20
0.4
3
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG. 5 VCE(sat) - IC
FIG.6 VBE(sat) -IC
485
10
20
I I
1/ II /
6
g
.9
~
W
II:
II:
1/
II
J
5
CURVES SHOULD BE APPLIED
IN THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
(D INFINITE HEAT SINK
(j) NO HEAT SINK
COMMON EMITTER
VCE = 3V
I I
I I
4
p/ Ii]
:l
U
II:
~
t3w
~l
0
"
...J
...J
I
(j)
0
-
'?
~
I
0
U
/
II I
J
0.4
0.8
II
,/
/
L/
o
(j)
~
1.2
~
1.6
2.0
2.4
0.001
2.8
0.1
0.01
PULSE WIDTH tw (sec)
BASE EMITTER VOLTAGE VBE (V)
FIG. 7
FIG. 8 'th - tw
Ie - VBE
20
I
I I IIIIII
IC MAX (PULSED) ;£:;
10
ICMAX
(CONTINUOUS)
g
~?q,
N~
1:>
.>
"'~"%,
-lll: \ ..:
~
-"",
It..,....~~\
.9
~OC
IZ
W
II:
II:
••
i\\I\ \
~
(\~~~~~~~~
c ~
1\
:l
U
01-
II:
0
I-
U
W
...J
..J
0
U
0.5
""
0.3
1\"
x'
0.1
1\
SINGLE NON REPETITIVE PULSE
Tc = 25'C
-::
::;; @x
«
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE
0.05
}'
0.03
10
1
30
COLLECTOR·EMITTER VOLTAGE VCE (V)
FIG.9
SAFE OPERATING AREA
486
100
-
10
100
1000
D54D6D
NPN POWER DARLINGTON
TRANSISTORS
400 VOLTS
6 AMP, 25 WATTS
Designed for igniter applications, high voltage switching
appl ications.
Features:
• High DC Current Gain:
hFE =600 (Min.) (at VCE
=2V, IC =3A)
CASE STYLE TO-2201S
• Monolithic construction with built-in base-emitter shunt
resistor.
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.406(10.3) MAX.
• Isolated TO-220 package.
.055(1.4)
.030(2.54)
~·gri~(~·~;i
.100(2.54) ± .010(0.25)-1--+-+-.100(2.54) ± .010(0.25)
EQUIVALENT CIRCUIT
BASE 0
maximum ratings (TA = 25° C)
(unless otherwise specified)
SYMBOL
054060
VCEO
VCSO
VESO
400
600
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
6
A
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@Tc= 25°C
Operating and Storage
Junction Temperature Range
Is
PD
PD
1
2.0
25
A
Watts
TJ, TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
thermal characteristics
Maximum Lead Temperature for Soldering
Purposes: lis" from Case for 5 Seconds
260
487
=25° C) (unless otherwise specified)
CHARACTERISTIC
I SYMBOL I MIN
electrical characteristics (TA
I
TYP
MAX
UNIT
-
-
Volts
off characteristics
Collector-Emitter Breakdown Voltage
(IC = lOrnA)
400
V(BR)CEO
Collector Cutoff Current
(VCB = 600V)
Emitter Cutoff Current
(VEB = SV)
ICBO
-
-
0.5
mA
lEBO
-
-
3.0
mA
second breakdown
ISecond Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 6
on characteristics
DC Current Gain
(Ic = 2A; VCE = 2V)
(Ic = 4A, VCE = 2V)
Collector-Emitter Saturation Voltage
(Ic = 4A, IB = 0.04A)
iEmitter-Coliector Forward Voltage
(IE = 4A, IB = 0)
Base-Emitter Saturation Voltage
(Ic = 4A, IB = 0.04A)
-
-
-
2.0
Volts
-
-
3.0
Volts
-
-
2.S
Volts
-
-
1.0
/ls
-
8.0
-
S.O
hFE
600
100
VCE(sat)
-
VECF
VBE(sat)
-
switching characteristics
Turn-on Time
VCC= 100V
Storage Time
181 = IB2
Fall Time
Duty Cycle:::; 1%
6
50
5
~
.9
...z
4
W
II:
II:
::J
0
II:
3
~
0
W
...J
...J
, /~
,.
V" ~
~ [/1'
I'"
l/
/ /
V/
'/. /
0
0
~ "".
I--'
I--'
"".
-
,,"'"
30
"". i-""""
20
"" .".
10
5
io-"'I'
-
tstg
tf
COMMON EMITTER
Tc = 25°C
w
IL
~
4
1.000
~oV
".,' X
.'<
CJ
500
ifiII:
300
...
%,j
::J
0
0
c
I
IB=0.5mA
~
100
COMMON EMITIER
VCE=2V
50
30
0.01
0
8
0.03
0.1
0.3
3
COLLECTOR CURRENT IC (A)
10
12
14
16
FIG. 2
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG. 1
~\
A
~I
II:
I
6
~\
Z
1
I I I
2
I
;;:
!
o
o
,
5.000
3.000
2
I--'"
"" -
-.".
......
ton
=0.04A
IC - VCE
488
hFE - IC
10
30
30
2V
UJ
l'l
COMMON EMITIER
ICIIS= 100
z
0
t=
~
~
z
-'
10
«a:_
~~
~;;
0
t=-
I
~<;.
5
a:.!l.
i=
UJ UJ
I:~
UJl'l
",
a:>
UJ
d:t!
I:
..... ~ 'I
Tc = -55'C
~
~
UJ
til
~
0.5
CD
0.5
25
I"
0.3
0.1
0.02
100
1
0.1
FIG. 4 VeE(sat) - Ie
COMMON EMITIER
VCE= 2V
10
'f
VI
3
0
""J I
/' J
I
1.2
1.6
.A
o
0.4
0.8
I
~
a:
a:
0
I
2.4
* *
\,-
'-
",\
0.5
~
2.0
"i>
.>
"t ~*
g
.9
SASE EMITIERVOLTAGEVSE (V)
FIG. 5
~
'%\~
::J
I I
0
'\.
~ ~-o
"
2
-'
0
~
3
~
'1- I~/~
a:
*
ICMAX
(CONTINUOUS)
5
IIJ I
AI 1/
4
o
IC MAX (PULSED)
-' 'I
0
!;i-'
20
VI
!zUJ
a:
a:
::;)
10
veE (sat) -Ie
6
.9
3
0.3
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
5
~25
100
10
3
1000'"
I I I
0.3
0.02
0.3
FIG.3
g
-
Tc = -55'C
jg
~:H
:~
"
~UJ.
0-'
1-0
0>
UJ
-'
-'
0
0
COMMON EMITIER
lells= 100
10
*
\
~\ \
SINGLE NONREPETITIVE PULSE
Tc = 25'C
0.03
CURVES MUST SE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE
0.01
10
30
'" ~ ~
~
100
300
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG. 6 SAFE OPERATING AREA
489
x
«
::;
@
0
>
1000
490
D54FY7D
NPN POWER DARLINGTON
TRANSISTORS
80 VOLTS
7 AMP, 30 WATTS
Designed for high power switching applications,
hammer drive, pulse motor drive applications.
Features:
• High DC Current Gain:
hFE = 2000 (Min.) (at VCE = 3V, IC = 3A)
CASE STYLE TO-2201S
• Low Saturation Voltage:
VCE(sat) = 1.5V (Max.) (at IC = 3A)
• Complementary to D55FV7D
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.406(10.3) MAX.
• Isolated TO-220 package
-t---\II\U~·047(1.2)
.055(1.4)
.030(254) ~ .g~(~·~:1
.100(2.54) ± .010(0.25)-1-+-1_.100(2.54) ± .010(0.25)
EQUIVALENT CIRCUIT
BASE o---""---1~---{
maximum ratings (TA
=25° C) (unless otherwise specified)
SYMBOL
VCEO
VCBO
VEBO
D54FY7D
80
80
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ic
7
A
Base Current - Continuous
18
0.2
A
Total Power Dissipation @Tc = 25DC
Po
1.0
Watts
TJ, TSTG
-55 to +150
DC
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Operating and Storage
Junction Temperature Range
thermal characteristics
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
260
491
electrical characteristics (TA
I
=25° C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAx
UNIT
V(BR)CEO
BO
-
-
Volts
Collector Cutoff Current
(VCB = BOV)
ICBO
-
-
100
I-'A
Emitter Cutoff Current
(VEB = SV)
lEBO
-
-
3.0
mA
CHARACTERISTIC
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = SOmA)
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 9
on characteristics
DC Current Gain
(Ic= 3A, VCE = 3V)
(Ic = 7A, VCE = 3V)
Collector-Emitter Saturation Voltage
(Ic = 3A, IB = 6mA)
(Ic = 7A, IB = 14mA)
Base-Emitter Saturation Voltage
(Ic = 3A, IB = 6mA)
,
-
lS000
0.9
1.2
1.S
2.0
V
VBE(sat)
-
1.S
2.S
Volts
ton
-
O.B
tstg
-
3.0
tf
-
2.S
-
hFE
2000
1000
VCE(Sat)
-
-
switching characteristics
Turn-on Time
Vee = 4SV
Storage Time
IB1 = IB2 = SmA
Fall Time
Duty Cycle::::; 1%
10
10
COMMON EMITTER
Tc= 100'C
COMMON EMITTER
Tc=2S'C
8
8
./~
.9
6
~
...J
...J
8
1'0/0.8
6
~~
~/
,,-
II:
II:
::J
0.8
0
II:
v:
4
!zw
1.0
~
0
.9
1.2
~V
II:
II:
::J
II:
~
1.4
~
!zw
I-'s
§w
0.6
4
~
...J
...J
r
0
0
0.4
2
.,
-
.........
...
0.6
-
0.4
I
IS = 0.2 mA
2
I
IS = 0.2mA
°o
J
2
4
6
8
I
10
°
o
12
o
J
2
4
6
8
°
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 2
FIG. 1 IC - VCE
492
IC - VCE
10
12
10
COMMON EMITTER
Tc =-50·C
8
4.0
~
.9
lZ
t:.
V--
S
W
II:
II:
::l
tl
II:
12
tl
I-""'"
t:...
3.0
i"""
~
2.5
w
u.
.<:
Z
~
l-
3,000f-
~
2.0
vI
W
4
II:
~
1.5
w
tl
tl
..J
..J
Cl
0
,
tl
1.0
'r
IB
A
l'OO°mmJ~~~
COMMON EMITTER
VCE = 3V
500 1-..f-..f-+-l-+H----+-4--l
=0.5 rnA
a
8
6
10
12
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 4
Ie - VeE
FIG. 3
hFE - Ie
10
COMMON EMITTER
ICIIB 500
=
COMMON EMITTER
IC/IB 500
z
=
o
~
II:_
5
::l>
1--
« ::~ !
II
w w
1=,;'
:q\j
Tc
'\'«
II: I-
f:?6
u>
w
:::l
o
U
0.5
0.3
= =
25
- -
100
:.,... ~~~
=-50·C
I
--
....-:
......
r
Tc
=-50'C
25
~
100
-
--
....
~~
0.5
10
0.4
20
FIG. 5
0.4
3
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
VeE (sat) - Ie
FIG. 6
493
VBE(sat) - Ie
10
20
I I
I II I
I
/
I
g
.9
5
I I
~
a:
a:
~
4
I /
u
? '""'/
U
a:
0
!3w
CURVES SHOULD BE APPLIED
IN THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
CD INFINITE HEAT SINK
CD NO HEAT SINK
COMMON EMITTER
VCE=3V
~
"
,5:/
3
..J
..J
CD
JJ
I
I I
0
U
I
o
o
/
0.4
0.8
/
I
1.2
/
1.6
2.4
2.0
2.8
o.
3.2
0.001
0.01
0.1
Ie - VBE
FIG. 8
20
I
I I I I I "I
IC MAX (PULSED)
lSi
10
~~ .
~o
'l>..
~"'~-i/:-
(CONTINUO~'"
IC MAX
5
-!j:-
"'-$"
g
<)
\\
.9
>zw
a:
a:
.IC..t:'O.o ' "
\
~
""
\*
\
,< ~ \\
"'.r"(.<'~
o ~Q
\
'l-
~
U
a:
0
>U
w
'\
0.5
..J
..J
0
U
10
PULSE WIDTH tw (sec)
BASE EMITTER VOLTAGE VBE (V)
FIG. 7
ill
~
\
0.3
i\
*
0.1
SINGLE NONREPETITIVE PULSE
To = 25"C
0==
X
~
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE
~-
>
0.05
0.03
3
10
30
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG.9
SAFE OPERATING AREA
494
-
-
rth - tw
100
1000
D54H6D
NPN POWER DARLINGTON
TRANSISTORS
250 VOLTS
6 AMP, 25 WATTS
Designed for igniter applications, high voltage switching
appl ications.
Features:
• High DC Current Gain:
hFE =2000 (Min.) (at VCE
=2V, IC =2A)
CASE STYLE TO-2201S
• Isolated TO-220 package.
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
;---\11 \"lRllr-· 047 (1.2)
.055(1.4)
.030(2.54)
EQUIVALENT CIRCUIT
BASE 0
f-- ---- --
:I
w
S
~ .g~~(~};1
.100(2.54) ± .010(0.25)--1--+-+-.100(2.54) ± .010(0.25)
{T"'O'
L.. _ _ _ _ _ _ _ _ _ _
:
.J
EMITTER
maximum ratings (T A = 25° C)
(unless otherwise specified)
SYMBOL
VCEO
VCSO
VESO
D54H6D
250
300
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ic
6
A
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@TC=25°C
Is
A
Po
Po
1
2.0
25
Watts
TJ, TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Operating and Storage
Junction Temperature Range
thermal characteristics
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
260
495
electrical characteristics (T A = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
VCEO(sus)
250
-
-
Volts
ICBO
-
-
0.5
mA
lEBO
-
-
0.5
mA
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = 0.5A, L = 40mH)
Collector Cutoff Current
(VCB = 300V)
Emitter Cutoff Current
(VEB = 5V)
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE 4
FBSOA
on characteristics
DC Current Gain
(Ic = 2A, VCE = 2V)
(Ic = 4A, VCE = 2V)
hFE
2000
200
-
-
Collector-Emitter Saturation Voltage
(Ic = 4A, IB = 0.04A)
VCE(sat)
-
-
2.0
Volts
Base-Emitter Saturation Voltage
(Ic = 4A, IB = 0.04A)
VBE(sat)
-
-
2.5
Volts
ton
-
1
-
ps
8
-
-
switching characteristics
Turn-on Time
VCC = 100V
Storage Time
IB1 = IB2 = O.04A
tstg
Fall Time
Duty Cycle::; 1%
tf
7.0
I
20
6.0
~",
/
5.0
5:
,l
.9
...z
4.0
W
II:
II:
::J
0
'/
3.0
0
0
w
...J
...J
2.0
0
0
1.0
o
o
V
~
/
r/
JV'
I
Iv
~
1.0
......
""
."
10'
..-
-L-
2.0
10
I-'
COMMON
5
EMITIEFi:
Tc=25'C
.......,.......
......
~
i-"'"
"'"
3.0
10.000
-L
...... i.-"'"
,,/
V
'/ ....... I-'
II:
...
V
I
- -
5
orO
;/L<"'
5,000
3,000
2
u.
.<:
~
Z
~
1
.-,-
I-
zw
-
1,000
V
fl>.,..
II:
II:
::J
0.5
0
0
500
c
I
V
.........
COMMON EMITIER
VCE= 2V
100
0
0.03
6.0
7.0
0.1
0.3
3
B.O
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG. 1
\
"
I
5.0
--
300
18 =0.2mA
4.0
,
t\.\
/'
w
--r-
:......~
.A
FIG.2
IC - VCE
496
·hFE -IC
10
10
20
COMMON EMITTER
ICIIS= 100
I
I I I 11111
IC MAX (PULSED)
0
5
I
*
,'\
3
J......!!
Tc = -55'C
""
0.5
~
0.2..
0.05
r-
3
"\1\
I..C MAX .
(CONTINUOUS)
"-
--
~~
~
"'-*-
"
1
1>
[\~-.
'"
.>
: *
~
'12.
~
1\ #.-
o. 5
0.3
3
f\
" ,,\
"9:-
COLLECTOR CURRENT IC (A)
FIG.3 VCE(sat) - IC
~
I
o.1
*
0.05
_'\
~fil JR
SINGLE NONREPETITIVE PULSE
Tc = 25'C
>,
0.03
CURVES MUST SE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE
0
0
COMMON EMITTER
ICIIS= 100
5
0.01
2
3
~
'-
1
10
30
100
~
FIG.4 SAFE OPERATING AREA
~
25
"
0.5
0.2
0.05
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
L..oj,ol
Tc=-55'C
0.1
100
0.3
3
10
COLLECTOR CURRENT IC (A)
FIG. 5
VaE(sat) - IC
497
,
'\
<'"
0.3
10
'\
",. 0,,'C?c J\
<3-.,
I
-
"t.
25
100
I
0.1
~~
--
'\.'\.
5
-+-
300
498
D55A7D
PNP POWER DARLINGTON
TRANSISTORS
-100 VOLTS
-7 AMP, 30 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive applications.
Features:
• High DC Current Gain:
hFE = 2000 (Min.) (at VCE = -3V, IC = -3A)
• Low Saturation Voltage:
VCE(sat) =-1.5V (Max.) (at IC
CASE STYLE TO-2201S
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.406(10.3) MAX.
=-3A)
• Complementary to D54A7D
• Isolated TO-220 package
.055(1.4)
.030(2.54) :
.100(2.54)
EQUIVALENT CIRCUIT
:g~~(~~;1
± .010(0.25)-+-~_.100(2.54) ± .010(0.25)
COLLECTOR
BASE
0--...:....._---1
L---JoII__~>__...J_ .J
EMITIER
maximum ratings (TA = 25° C)
(unless otherwise specified)
VCEO
Vcso
VESO
D55A7D
-100
-100
-5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
-7
A
Base Current - Continuous
Is
-0.2
A
Total Power Dissipation @ Tc = 25°C
Po
30
Watts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
Operating and Storage
Junction Temperature Range
thermal characteristics
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
260
499
electrical characteristics (TA = 25 0 C)
(unless otherwise specified)
CHARACTERISTIC
TYP
MAX
UNIT
1 SYMBOL 1
MIN
V(BR)CEO
-100
-
Collector Cutoff Current
(VCB -100V)
ICBO
-
-
-100
p.A
Emitter Cutoff Current
(VEB -SV)
lEBO
-
-
-4.0
mA
I
off characteristics
Collector-Emitter Breakdown Voltage
(Ic -SOmA)
=
=
=
second breakdown
ISecond Breakdown with Base Forward Biased
FBSOA
'I
-
Volts
SEE FIGURE 9
on characteristics
DC Current Gain
(IC -3A, VCE -3V)
(Ic -7A, VCE -3V)
=
=
=
=
Collector-Emitter Saturation Voltage
(Ic -3A, IB -6mA)
(Ic -7A, IB -14mA)
=
=
VCE(sat)
VCE(sat)
Base-Emitter Saturation Voltage
(IC -3A, IB -6mA)
VBE(sat)
=
=
=
=
switching characteristics
Turn-on Time
VCC =-4SV
Storage Time
IB1 =IB2 =6mA
ton
tstg
Duty Cycle :5 1%
Fall Time
-
15000
-
-
-
-0.95
-1.3
-1.S
-2.0
Volts
-
-1.SS
-2.S
Volts
-
0.8
-
ps
2.0
2.S
-
2000
1000
hFE
tf
-
--10
-10
COMMON EMITTER
Te= loo·C
COMMON EMITTER
Te = 25·C
g
-e
-8
J?
!zw
IX:
IX:
-2.5
-6
0
IX:
..J
..J
"........-
-2.0
II ,/"
::>
~
~
I""
-2
15IX:
-;,,1:-
IX:
~
'/,
-4
..J
..J
8
-4
-6
-e
-12
V
)
o
0
-2
-6
-4
-e
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
I-
le=-o·5mA
-2
o
~O
../
."
'/
W
0
o
"
::>
Ie = -0.5mA
~
./"'-1.0_
IX:
0
~
-6
0
-
8
-2.sh ' l - , . 5
J?
....
1/ . /i--"'"'
V
/"
-4
-2.0
g
-1.5
IC - VCE
FIG. 2
SOO
IC • VeE
-10
-12
-10
10,000
COMMON EMITTER
Tc =-50·C
5,000
-8
I-4.5
~
SJ
z>-
UJ
'"'"
'"0>-
~ ::::-
::l
U
u..
UJ
-'
-'
0
(!l
-2
0:
0:
::l
U
U
-1.5
1,000
V
lI iI
'~
500
IS
J
./
=-0.5mA
I
-0.3
-6
-4
COMMON EMITTER
Vcc-3V
300
I
0
-2
~'o
c
-1.0
V
o
1/
UJ
-2.0
II
U
z>-
- r-
-2.5
."
~
1/
Z
«
-3.5
~,-3.0
~~
U
3,000
.<:
~ ~_I"'"'
-4
o
~
/
-6
UJ
-4.0
......
r- t=t+,~I:ffc.
r- <,c.'
-8
-10
-3
-1
-12
COLLECTOR-EMITTER VOLTAGE VCE CV)
FIG. 4
FIG. 3 IC - VCE
COMMON EMITTER
ICIIS SOO
COMMON EMITTER
Ielis =500
-3
=
UJ
(!l
0
"'::l>
>--
Tc
;:-
m
'"UJ W
I:::P
-1
>
'l'<
0
~2:
-'
Tc
0:
::l
!
~ w
25
-0.5
w
I:
'\ 25
~
en
U
<
III
-0.Q1
-0.3
-1
~
-0.3
-1
-3
-10
100
-0.5
-0.3
-0.3
-30
COLLECTOR CURRENT IC CA)
-t:: ~'"
=-so·c
~-+--I-" ""'"
'"
0:>
100
U>
UJ
-'
0
-3
z
=-50·C ~,.~
:q~
"'>0-'
>-0
-5
~
0
j::
<
<
en
hFE - IC
-10
-5
z
-30
-10
COLLECTOR CURRENT IC CA)
...1
~
-3
~O
COLLECTOR CURRENT IC CA)
FIG. 6
FIG.5 VCE(sat) -IC
501
VBE(sal) - IC
-30
-7
-6
~
II
I
I
I
COMMON EMITIER
VCE =-3 V
-5
w
II
Z
.9
~
<
§
~
II:
-'
0
II
-1
II'
-0.4
.{l.8
./
-1.2
(1)
-'~
Ii?
~ll
10
11:'
w-
j:'¥
zw
I
II J
I
) V I
-2
o
o
1{1
"
100
ffi
II:
~J
-3
§
~
Iii
II
-4
II:
II:
II
CURVES SHOULD BE APPLIED
IN THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
'"
r\'
".r,,,,,~~
"
-1
~01-
II:
II:
~1\"
:::l
§w
.{l.S
-'
.{l.3
-'
0
II
'«,
\
"
II
II:
V.
~
"'-lil
Jo~"O~ ,
~
.9
fzw
*"
~~
(CONTINUO~",",
'* I\.. *
IcMAX
-3
1\
* TcSINGLE
NON REPETITIVE PULSE
=2S'C
.{l.1
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE
<
::
===
==
=
--
~
- r--
x
@ - r--
-0.05
-0.03
10
FIG. 8
-20
-10
111111111 I 11111111
0.1
PULSE WIDTH tw (sec)
BASE EMITIER VOLTAGE VBE.(V)
FIG. 7
j",.oo
i
i
I II
I
I
-30
-10
-3
I
-100
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG.9
SAFE OPERATING AREA
502
rth - tw
100
1000
D55FY7D
PNP POWER DARLINGTON
TRANSISTORS
-80 VOLTS
-7 AMP, 30 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive applications.
Features:
• High DC Current Gain:
hFE = 2000 (Min.) (at VCE
=-3V,
• Low Saturation Voltage:
VCE(sat) = -1.5V (Max.) (at IC
IC
=-3A)
CASE STYLE TO-2201S
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
=-3A)
.406(10.3) MAX.
• Complementary to D54FY7D
• Isolated TO-220 package
.055(1.41
+ .010(0.251
.030(2.54) _ .006(0.15)
.100(2.541
EQUIVALENT CIRCUIT
± .010(0.25)-.1-++-.100(2.541 ± .010(0.25)
COLLECTOR
BASE O---7-"---~
L-~_----<~_.....J_ .J
EMITIER
maximum ratings (TA = 25° C)
(unless otherwise specified)
VCEO
VC80
VE80
D55FY7D
-80
-80
-5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ic
-7
A
Base Current - Continuous
18
-0.2
A
Po
30
Watts
TJ. TSTG
-55 to +150
°C
SYMBOL
RATING
Cqllector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Total Power Dissipation @ Tc
=25°C
Operating and Storage
Junction Temperature Range
thermal characteristics
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
260
503
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
I
I SYMBOL
CHARACTERISTIC
TYP
MIN
MAX
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =-50mA)
-80
-
-
Volts
ICBO
-
-
-100
p.A
lEBO
-
-
-4.0
mA
V(BR)CEO
Collector Cutoff Current
(VCB =-80V)
Emitter Cutoff Current
(VEB =-5V)
second breakdown
ISecond Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 9
on characteristics
DC Current Gain
(Ic =-3A, VCE =-3V)
(Ic =-7A, VCE =-3V)
-
-
hFE
2000
1000
Collector-Emitter Saturation Voltage
(Ic =-3A, IB =-6mA)
(Ic =-7A, IB =-14mA)
VCE(sat)
-0.95
-1.3
-1.5
-2.0
Volts
Base-Emitter Saturation Voltage
(IC =-3A, IB =-6mA)
VBE(sat)
-
-1.55
-2.5
Volts
.ton
-
0.8
tstg
2.0
tf
-
2.5
-
JiS
-
switching characteristics
Turn-on Time
VCC =-45V
Storage Time
IB1 = IB2 =6mA
Fall Time
Duty Cycle:::; 1%
15000
-
-
-10
-10
COMMON EMITIER
Tc = 25'C
COMMON EMITIER
Tc= 100'C
~
-8
~
.9
!zw
II:
II:
:::l
-1.5
II:
11/
-4
. /~
~
:::l
~~
II:
~
18 =-0.5 rnA
'/-1.5
I/
-4
/
/~-1.0_
/
~
l18 =-0.5 rnA
'/
V
-2
0
0
o
-2.5l
fJ
8
V
-2
-6
()
~
V
...J
...J
0
()
-2.0
~
......--~
-2.0
II '/"
()
§w
V.
-2.5
-6
-8
.9
-2
-4
-6
-8
o
-10
-12
0
-2
-4
-6
-8
COLLECTOR-EMITIER VOLTAGE VCE (V)
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG. 1
1
FIG. 2
IC - VCE
504
IC - VCE
-10
-12
10,000
-10
COMMON EMITTER
Tc = -50'C
5,000
-8
!zw
-4
w
:l
.....
W
-2.5
IX:
IX:
::>
-2.0
'!-'"
V
~
1,000
1;'"
fjl
~
0
0
0
-1.5
-1.0
500
Ie = -O.5mA
COMMON EMITTER
VCE =-3V
300
J
o
....
I'"
~
;;:
V
0
-
3,000
fZ
rt/
-2
.....
~c/"
(!)
-3.0
~
0
.....
z
U --
0
8
.s::
-4.0
l - -3.5
~~~
~V
::>
IX:
LL.
~
/
-6
IX:
IX:
~
w
-4.5
~
9
- TI~c~
-
0
-6
-2
-0.3
-8
-10
-12
-1
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 3
-30
-10
COLLECTOR CURRENT IC (A)
FIG. 4
IC - VCE
hFE - IC
-10
-5
COMMON EMITTER
Ielle = 500
COMMON EMITTER
Ielle = 500
-3
w
(!)
~
z
0
;::
0
>
,L
~~
~i
IX:
W
Tc = -50'C
-1
z
a
~~
~~
d:~
f-O
-0.5
0>
Tc = -50'C
Cli~
w
0-'
-3
;::-
,
~I>
I:~
w
-5
-'
25
IX:
100
I:
-1
eli
-0.5
w
~ '\
:il
w
W
Ul
-0.3
-'
-'
0
0
-0.01
_kI
:...1.--- ~
iooo"
25
100
I
-0.03
-0.3
-1
-10
-0.3
-30
-1
-3
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG. 6 VBE(sat) - IC
FIG. 5 VCE(sat) - IC
505
-10
-30
-7
I
I
I
1
-6
CURVES SHOULD BE APPLIED
IN THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
(]) INFINITE HEAT SINK
(]) NO HEAT SINK
COMMON EMITIER
VCE = -3V
-5
(J
-4
§
-3
~
(])
I'"
I
-2
II
1
o
~
'"'"
"
)
o
-0.4
-0.8
(])
I
L,..o
I j
V I
~
-1.2
IJ
-1.6
-2.0
-2.8
-2.4
o. 1
-3.2
0.001
BASE EMITIER VOLTAGE VBE (V)
FIG. 7
PULSE WIDTH
Ie - VBE
FIG.8
-20
I
I I I I I "I
*'
IC MAX (PULSED)
-10
-5
~
ICMAX
(CONTINUOUS)
-3
~
~
~~ r\.,~ ~
-.>
'%.
"''''"
'11.'
r\" \
~~OOA).'\
"l\~'
':>.r,~~ ~I\
IZ
:l
~~.
~
~
.9
w
a:
a:
o
-1
~
0",
()
a:
~
{J
w
-0.5
..J
..J
0
()
1\1\
-0.3
r\~
-0.1
10
0.1
0.01
'"
r\
SINGLE NON REPETITIVE PULSE
Tc= 25'C
x
:!i= ~
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE
fi3
~- f--
-0.05
-0.03
-3
-10
-30
-100
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG.9
SAFE OPERATING AREA
506
-300
'w (sec)
rth tw
100
1000
HIGH SPEED
D64D85,6,7
D64ESS,6,7
NPN POWER DARLINGTON
TRANSISTORS
400-500 VOLTS
20 AMP, 125 WATTS
These devices are designed for use in high-speed switching
applications, such as off-line switching power supplies PWM
DC and AC motor control, UPS, ultrasonic equipment and
other high frequency power conversion equipment.
Features:
• High Speed: ts
< 3.0 J,Lsec., tr < 1.0 J,Lsec.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.845(21.47)
• High Voltage: 400-500 VCEO(SUS)
• High Gain: hFE 40 Minimum @ IC
MAX
~~.358(9.091 MAX
0~~lx65l~
=20A
T
• High Current: 30 Amperes, IC (Peak)
0043(1.09)
0.03B(0.97)
~
0,
DIA.--.I!-
SEATING PLANE
.426(10.82) MIN
CASE TEMP.
REFERENCE
POINT
.20(5.00)
BASE
0.162(4.09)
OIA.
0.15(3.B41
2 HOLES
D64ES
D64DS
0.440(11.181
0.420( 1067)
DEVICE CIRCUIT
maximum ratings (T C = 25° C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
D64DS
D64ES
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @TC = 25°C
Operating and Storage
Junction Temperature Range
(unless otherwise noted)
D64DS5/ES5
500
400
D64DS6/ES6
600
450
D64DS7/ES7
700
500
8
8
8
IC
ICM
ICSM
IB
IBM
Po
5
20
30
50
5
10
125
5
20
30
50
5
10
125
5
20
30
50
5
10
125
Watts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
°C
RSJC
1
1
1
°CIW
TL
300
300
300
°C
SYMBOL
VCEV
VCEO
VEBO
UNITS
Volts
Volts
Volts
A
A
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
507
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
I
TYP
I
_
MAX
UNIT
off characteristics
Collector-Emitter Sustaining Voltage
(IC = .5A)
(Vcl amp = VCEO Rated)
Collector Cutoff Current
(VCE = Rated Value, V8E = -1.5V)
Emitter Cutoff Current
(VE8 = 4.5V, IC = 0)
(VE8 = 1.5V, IC = 0)
D64DS5/ES5
D64DS6/ES6
D64DS7/ES7
TJ = 25 DC
TJ = 150DC
D64DS
D64ES
VCEO(sus)
400
450
500
ICEV
-
IE80
-
-
-
-
Volts
1.0
2.5
rnA
-
200
200
mA
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 26
on characteristics
DC Current Gain
(IC = 30A, VCE = 5V)
(Ic = 20A, VCE =5V)
(lc =10A, VCE =5V)
Collector-Emitter Saturation Voltage
(IC = 30A, 18 =3A)
(IC = 20A, 18 =2A)
(IC = 10A, 18 =1A)
hFE
VCE(sat)
20
40
100
35
85
160
-
-
-
2.1
1.6
1.2
3.5
2.5
1.5
V
-
2.65
2.3
1.8 -
4
3
2.5
V
TYP.
MAX.
-
Base-Emitter Saturation Voltage
(IC = 30A, 18 =3A)
(Ic = 20A, 18 =2A)
(Ic =10A, 18 =1A)
V8E(sat)
-
switching characteristics
Resistive Load
Delay Time
VCC
=250V
td
Rise Time
=20A
181 =1A, 182 =2A
tp =50 #lsec
tr
Storage Time
Fall Time
IC
ts
tf
-
-
OS
ES
OS
ES
.05
.05
.5
.5
.4
.4
1
1
2.2
1.8
5
3
1.6
.45
3
1
#lS
emitter-collector diode characteristics
Power Dissipation
Forward Voltage
Reverse Recovery Time
(IF =25A, di/dt =15A/#lsec, R81E
(181
(IF =10A)
(Ip =25A)
(IF =25A, TJ
=0)
=150DC)
=.250)
-
-
-
1.95
2.80
2.75
125
3.20
4.00
4.00
Watts
Volts
Volts
Volts
Trr
-
3.85
10
#lSeC
TON
-
0.42
1.0
psec
-
-
50
1.0
Amps
DC/Watt
Po
VF
VF
VF
-
Forward Turn-On Time
(IF =25A, di/dt = 50A/#lsec)
Single Cycle Surge Current (60Hz)
IFSM
Thermal Resistance
R9JC
508
TYPICAL CHARACTERISTICS
1000
1000
VCE=2V
z
TJ=I!!O·C
to
~
;;:
>Z
w
~ '100
:;J
u
u
.L £
'"
/'
veE =5V
/
-
z
....
......
TJ=OoC
~
to
.......
u
.......
/Tr
TJ=150·Y
;;:
"TJ=IOO°C
>Z
w
a:
a: )00
:;J
u
·C
V
,\
I
5
10
Ic. COLLECTOR CURRENT {AMPERESI
FIGURE 1. DC CURRENT GAIN (VCE
= 2V)
/
>Z
w
a:
a:
10
:;J
\\ ~,
5
10
30
IC. COLLECTOR CURRENT {AMPERESI
.......- V
. . . .V
- TJ=25°C
u
u
'"
'"'"
~ TJ=O°C
~ I-""
~
~
t
)0
a:
w
>>-
8
~
\
\
\
W
...J
...J
~:\
~~,
8
4
-J1
1\
.
5
10
2
o
FIGURE 3_ DC CURRENT GAIN (VCE = 10V)
o
2:
j
a:
w
>>-
/
iw
a:
o
>u
W
...J
...J
8
10.0
.... .... 1-'
I
I
I
/
/
I
I
I
o
2:
/3=25
/.
/
a:
w
>>-
I
a:
o
>u
......
V
W
...J
...J
V
81.0
.: 1.0
/
I
!I
/3=25
J
/
1/1/
:;;
w
/!I=IO
OI c-f/3=50
I
iii
>...J
I
~V
/3= IC
TJ=IOO·C
(3 =Ic/Iel
/!I = 50
I
10
FIGURE 4. COLLECTOR SATURATION REGION
/!I=IOO
TJ= 25°C
/3= Ic/lal
,
...........
0.1
1.0
lB. BASE CURRENT (AMPERES)
.01
VCE ISAlI. COLLECTOR EMITTER {VOL TSI
10.0
1\
ui
'\\ ~
\',
r~\ ~\
30
I
iii
>...J
TJ =2S0C
IC' 2OA
6
u
~
/'
I
Ie=IOA
a:
....... TJ =-40°C
1.0
~
~
././
./
./
./
ui
.1 III
I
I c =5A
iii
>...J
..... i-"""
TJ=IOO·C
\~
FIGURE 2. DC CURRENT GAIN (VCE = SV)
12
TJ-I~
"'-'.
'\ ~\
I
VCE = 10V
to
~~"
,
10
100
14
z
.......
./
100
;;:
'-"J=O·C
V TJ=-40·C
~~
10
~
..-
./
~
V
..... V
./ ./
w'
t
'.\,\
TJ s I90 ·C
J=25
'"
~,
,~
,........-....... f--
.... ~~
/!I = 10
~
~
w
p-
-J1
10
10
30
Ie. COLLECTOR CURI'ENT IAMPERESI
30
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 6. VCE(SAT) VS. Ic. T J = 100°C
FIGURE 5. VCE(SAT) VS. IC' T J = 25°C
509
TYPICAL CHARACTERISTICS
10.0
o
TJ=25·C
Il=Ic/I BI
I
..J
o
/
~
a:
I
I
I
I JII
w
ff-
~
1/
w
a:
ofU
W
..J
..J
1/ 11
o
u
r::
10.0
11=25
1l=100/1l=5of-
TJ ·150·C
11 =Ie/III
. / i-'"
1.0
I.-'
...
iii
1/11=10
..J
IJ /
o
~
a:
......
w
~
:ii
w
«OJ
~
;::
~
w
- """
~
~
w
~
t:::::
11= 10
11=25
11-50
11=100
~
~
30
10
30
10
Ie. COLLECTOR CURRENT (AMPERES)
Ie. COLLEcrOR CURRENT (AMPERESI
FIGURE 7. VeE(SAT) VS. Ie. T J = 150°C
FIGURE 8. VBE(SAT) VS. Ie. T J = 25°C
)0.0
,
10.0
TJ=IOO·C
Il=Ie/ I BI
TJ= 150·C
11= Ie/IBI
...
iii
..J
iii
0
~
f-
..J
o
a:
w
......w
~
en
~
a:
:ii
ff-
w
w
w
w
V>
«OJ
~
;::
~
.
f..:::k: ~~
p..~
w
k::::: ~
>
V
~
«OJ
11=10
11=25
..........:
;::
B=50
~
11= 100
~~
..
w
)0
.---:::: ~ §
>
-=--
FIGURE 10. VBE(SAT) VS. Ie. T J = 150°C
1000
1.0
TJ=25·C
TJ=25°C
TJ= 100·C----TJ=1500C--
G
w
en
.3
r---... --.......
z
«
U
«
«
0-
/
I
I .1
1//
"iz
,.u
/ J
100
V- I,.-
w
a:
a:
OJ
u
r--.
u
~ -'" V v l...- 1--1../
a:
~
}-
Vce=250V
IeI=Ic/2O
la2=lc/10
VIE=-5V
t p =50,.SEC
/
,/ i.I l·
...~z
I'-- t-t--
~ r--........
f-
30
Ie. COLLECTOR CURRENT (AMPERESI
FIGURE 9. VBE(SAT) VS. Ie. T J = 100°C
U
~
;,.-
10
30
Ie. COLLECTOR CURRENT (AMPERES)
w
~ ~~
~
11=10
11=25
11=50
11= 100
~~
1.0
u
~~
w
en
O. I
-
I-
W
..J
..J
8
10
~-
I"'-
td
10
100
VeB. COLLECTOR BASE (VOLTS)
20
Ie. COLLECTOR CURRENT (AMPERESI
FIGURE 12..
FIGURE 11. CAPACITANCE (CeBO)
TURN-ON TIME (RESISTIVE LOAD)
(0640S ONLY)
510
TYPiCAL CHARACTERISTICS
10.0
1.0
TJ = 25·C
TJ=IOO·C---TJ=150·C--
G
.
w
III
/
//
l' ,
,
<.:J
Z
i
u
....
~
l,.' L'I.-
....
zw
~
'"::>'"
u
'"~
tr
/'
..... , - -
... '"
y
. '"
....
~
V
VCC=250V
lal= Ic/20
IB2=IC/10
Vap-5V
tp =5OI'SEC
w
-=<.:J
l:
u
a
~
I--'l.-'
V
1.0
'"
-
II:
::>
u
tf
~
II:
a
--
--:::.
u
.0 I
~
~
~
--
..J
..J
a
10:..
L--
u
td
1/
10
FIGURE 14.
TURN-OFF TIME (RESISTIVE)
(0640S ONLY)
10.0
TJ =2S·C
TJ = 100·CTJ =150·C
--
Vl
-=
r-
r-r-.
u
------J
~
:;;
;::
.............
I-
~
~
1.0
w
Ial = Icl20
Ial =Ic/40 - TJ=2S"C
Vee =2S0V
tp= 5Ol'SEC
VaE=OV
--
.~
i
5
~
a
~
u
-
a:
a
I-
u
W
..J
..J
....
1--
- ,...-
}tf
L-~
-
w
4
N
::;
~
./
".../
Vcc=2S0V
lal= Ic/2O
la2 =le/IO
VaE=-5V
tp =50,.SEC
~
a
u
2
II:
a
z
I
o
O. I
10
3
20
-- -
.....
I--
............ l--~
..
~
f-
....
~~'
~
~
--
~--
--
----:.::
I-
0.' ...... l-- -,- ....
i-- f-
I--
--.-
1--
?- -~ '""'
10
I
Ree=IKn
RSE=loon
I
Ra£=IKn
Rac loon
RaE = Ion
RaE=lon
RaC ln
RaE=ln
20
I
Ie. COLLECTOR CURRENT (AMPERESI
Ie. COLLECTOR CURRENT {AMPERESI
FIGURE 15.
NOTE' NORMALIZED TO
ts @l 2S"C FROM
FIGURE 14
--
_
_.......
w
II:
I-
'"a:::>
20
Ie. COLLECTOR CURRENT (AMPERESI
(064ES ONLY)
<.:J
Z
Vee = 250V
la,= le/2O
la2 =Ie/IO
VBE=-5V
tp =5OI'SEC
I
FIGURE 13. TURN-ON TIME (RESISTIVE)
w
,-
//
O. I
20
10
Ie. COLLECTOR CURRENT (AMPERESI
G
loy
".;
....
-
I-
-'::0.
..J
..J
,~
I-
w
-
.........
~
Z
/
o. I
W
-
G
III
TJ = 2S·C
TJ= IOO·C---TJ=ISO·C
FIGURE 16. NORMALIZED RESISTIVE
SWITCHING STORAGE TIME (RBE VARIATIONS)
VS. COLLECTOR CURRENT
TURN-OFF TIME (RESISTIVE)
(064ES ONLY)
(0640S ON L Y)
7
lei =le/20
lei =Ie/90 - - - TJ = 2S"C
Vee =2S0V
tp=SOI'SEC
VeE = OV
6
:g
5
>=
w
~
a:
~
N
..J
3
u
RaE= In
RBE= In
u
J..'
1.0
IZ
RaE=lon
V
I
l:
I-
---
~f--
ts
!----"
>=
u
r--_',::
,......1-
W
:;;
RaE'looon
RaE = loon
t-- __
--
ts
G
III
V
4
10.0
NOTE' NORMALIZED TO
t. @l2S"C FROM
FIGURE 15
'"a
I-
W
.........
..J
...J
a
---
[dr.;
.~
~
~/
tc
tf
--
//
TJ=25"C
TJ= 100·C----TJ=150·C--VCE(CI.AMP) = 250V
LolOOl'h
Ial o1 e/ 2O
Ia2=Ie/IO
Va£=-5V
1.0-
~I-
tf
~
7
u
10
O. I
20
'c. COLLECTOR CURRENT (AMPERESI
10
20
Ie. COLLECTOR CURRENT (AMPERESI
FIGURE 17. NORMALIZED RESISTIVE
SWITCHING STORAGE TIME (RBE VARIATIONS)
VS. COLLECTOR CURRENT
(064ES ONLY)
511
FIGURE 18. CLAMPED INDUCTIVE
TURN-OFF TIME
(0640S ONLY)
TYPICAL CHARACTERISTICS
1.6
10.0
- - ,-
G
w
'"-=w
r--
-...... J
r-
:::--
--- J
:;
i=
t!l
Z
:;:
U
I-
~
TJ=25°C--TJ= 100OC----ts TJ=1500C---
I-
Z
w
-
a:
a:
::>
u
~
a:
o
I::::..
IU
r-....
W
..J
...J
8
O. I
.........
--..
...........
-
r--
VCEICLAMP) =250 V
L=IOO"h
i-'ff-
~
I
:;
~ 1-""- ......
1.2
t!l
~
1.0
I-
'"w
Ie'IOA
a:
0
z
----
0.6
~
I c '5A
0.4
20
1.0
0.5
FIGURE 20.
(0640S ONLY)
1.6
1.6
w
i=
TJ =25°C
IclI el=20
VeE'-SV
CLAMPED INDUCTIVE
LOAD, L=IOO"h
VCEICLAMP)= 250 V
. /V
~V
V
~ ~V
1.2
w
t!l
«
a:
0
1.0
I-
'"
0
A~
W
N
::;
«
:;
a:
0
z
2.0
STORAGE TIME VARIATION
WITH 182
(064ES ON L Y)
-
1.5
Ie. COLLECTOR CURRENT (AMPERESI
FIGURE 19. CLAMPED INDUCTIVE
TURN-OFF TIME
:;
e;:;-'"
..4! ",
V
~
Ie. COLLECTOR CURRENT (AMPERESI
1.4
Ie=20A
-~
N
/
::; O.B
Ie=20A
«
V
:;
---- }f
---10
/. V
/.. ::;....-
i=
0
I
Ie"SA
Ie= IDA
V
w
a:
..,~
-w
«
Iel=Ic/20
Ie2=Icl10
tc VeE =-5V
-'"
1.0
1.4
~
TJ =25°C
IclI el=20
VeE=-5V
CLAMPED INDUCTIVE
LOAD, L=IOO"h
VCEICLAMP)= 250 V
0.8
e=20A
Ie=IOA
0.6 Ic'SA
V
~
~~
V
V
V
Ic=5A
i--""""
Ic=20A
Ic=IOA
1.4
-w
:;
",
TJ • 25°C
Ie/lei =20
VeE = -5 V
CLAMPED INDUCTIVE
LOAD, L=IOO"h
VCEICLAMP) = 250 V
1.2
~
..J
...J
«
u.
1.0
w
N
::;
«
:2
A W'
~
0:;
-
~~
i=
Ie=20A
Ie"IOA b
Ie' 5A
I-- I-"""
--
Ie'SA
Ie= lOA
Ic=20A
i:::=""
O.B
0
z
(1.6
0.4
0.4
1.0
0.5
1.5
0.5
2.0
1.5
1.0
2.0
RATIO, IBI IB2
FIGURE 21.
STORAGE TIME VARIATION
WITH 182
FIGURE 22.
1.6
-
w
:;
1.6
TJ ' 25°C
IclI el=20
VeE '-5V
CLAMPED INDUCTIVE
LOAD, L='IOO"h
VCEICLAMP!" 250 V
....-:::
~~
1.2
A.
i=
...J
...J
...0«
~
1.0
w
0
z
O.B
c=20A
Ie=IOA
0.6 I e =5A
0.4
~ ~ ......
Ic"SA
Ie= lOA
Ie=20A
~~
1.4
:2
i=
~",.
TJ = 25°C
Ie/l el=20
VeE= -5 V
CLAMPED INDUCTIVE
LOAD, L' 100"h
VeEICLAMP)' 250 V
1.2
0:;
w
>
0
",.
'"a:'"0
U
0
~
.....~
-
Ie' 2OA
1.0 Ic'IOA
Ie' SA
--
I e =5A
Ic=IO~
Ie=20
W
N
::; O.B
«
:;
~
0.5
~
w
V
;'
N
::;
«
:;
a:
182
(D64DS ONLY)
(064ES ONLY)
1.4
FALL TIME VARIATION WITH
0:;
0
z
1.0
1.5
0.6
0.4
2.0
0.5
RATIO, IBI IB2
FIGURE 23. FALL TIME VARIATION WITH
1.0
1.5
2.0
RATI0,IB1 1IB2
FIGURE 24.
182
(064ES ONLY)
CROSS-OVER TIME VARIATION
WITH 182
(D64DS ONLY)
512
-
TYPICAL CHARACTERISTICS
1.6
1.4
:Y
...:ll
;:
TJ z 25°C
Ic/ I el"20
VeEo-SV
CLAMPED INDUCTIVE
LOAD, LoIOO"h
VCE(CLAIIPI =250 V
....,.
,/'
1,2
...>
IX
0
en
en
1.0
~
0
IX
U
...
~
Q
N
:::i
«
:ll
IX
0
z
0.8
Ic"5A
Ic"IOA
0.6 I c "20A
0.4
~
~~
~
--
.../. ........ -::: ~
-:;:::.- ....
I C'20A
f-
iii
Ic=IDA
I c =5A I -
w
0:
W
0..
:ll
~
I-
Z
W
0:
0:
""\
:::J
U
a:
<:>
\
IoJ
oJ
o
V
LIMIT
u
I"
PART 5
1--+-I-t-Hf-Nl1-"-+-l-+NPART
;,
6
• LIMIT - - - - - TJ= 2SoC
0.1
DUTY CYCLE ~ 1%
1.0
10
2.0
1.5
1.0
--
~~~~~~~~~~~DOWN
U
0.5
1\
1.0~~~lBI
I ~~~:~ICII
~
lA 'f'
i\"
\
"\."'!:"=.
l\. \
.PART7
10)0
1,10
VeE. COLLECTOR EMITTER VOLTAGE IVOLTS)
RATI0.lal/ la2
FIGURE 26. FORWARD BIAS SAFE
OPERATING AREA
FIGURE 25. CROSS-OVER TIME VARIATION
WITH 182
(D64ES ONLY)
10
50
I
;::
I-
en
w
«
25
~
u
III:
...
W
...~
;:)
20
....
....
8
!:i
.1
w
DUTY CYCLE =.05
0..
~
Iii
DUTY CYCLE·.OI
oJ
«
::E
0
t;
DUTY CYCLE =.1
«
Q
II:
III
OUTY CYCLE=.2
z
w
z
II:
U
W
III:
u
DUTY CYCLE=.S
TJ"21i"C
-- i-L"IOO"h
f-V8Eo-IiVe.IiSl
5!alole/IO
100
lI-
Z
w
iii .001
"-
300
L
w
I
~
200
.01
0:
\
\
10
PARTIi
/T PART 6-=: '=:--
~P~RT7
400
z
«
0:
I-
~iGLE
.0001
.000001
500
-~ ~
-V
PULSj
.00001
.0001
VeE, COLLECTOR EMITTER VOLTAGE (VOLTS)
.001
.01
10
.1
PULSE WIDTH. TIME IN SECONDS
FIGURE 27. REVERSE BIAS SAFE
OPERATIN.G AREA
FIGURE 28. TRANSIENT THERMAL RESPONSE
DIODE CHARACTERISTICS
iii
20
w
TJ =2SoC
TJ=IOO·C----TJ=ISO'C--
0:
w
0..
:ll
~
IZ
~
W
0:
0::
:::J
U
Q
0:
~
~
10
~
/'
0:
~
III
/'
:::J
o
// J
z
'II
«
I20~4--+~f--+-~-4--~4-~-4--~~~-4--~
'~
101--+-+-+-+-+-+-+-+-+-+-+-+-+....300.l-~-+-l
°0~~~2~0~~4~0~L-~60~L-~80~L-1~0~0-L-1~2~0-L-1~4~0~~160
z
«
I
l-
V)
Z
>i'
....
I
0.0
Te. CASE TEMPERATURE rc)
FIGURE 29. POWER DERATING
'/
(,/II
1.0
2.0
3.0
4.0
VTM. INSTANTANEOUS FORWARD VOLTAGE (VOLTSI
FIGURE 30. FORWARD CHARACTERISTICS
513
5.0
TYPICAL CHARACTERISTICS
+250VOC
+6VOC
; 12.snRL
(NON INDUCTIVE 1
{IGj"
DUTY CYCLE)
+5V
~50~S
022
V
CLAMP
270
6 B
100
.. 'SELECT
RI FQR-+l ar = 1.0· AMP5
R2 FOR - lei' 2.0 AMPS' IS2
- 6VDC
FIGURE 31. SWITCHING TIME TEST CIRCUIT
514
HIGH SPEED
D64DV5,6,7
D64EV5,6,7
NPN POWER DARLINGTON
TRANSISTORS
400-500 VOLTS
50 AMP, 180 WATTS
These devices are designed for use in high-speed switching
applications, such as off-line switching power supplies, PWM
DC & AC motor control, UPS systems, ultrasonic equipment
and other high frequency power conversion equipment.
Features:
• High Speed: ts
< 5.0 f..Lsec., tr < 3.0 f..Lsec.
CASE STYLE TO-204AE (TO-3)
H
DiMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High Voltage: 400-500 VCEO
0.845(21.47)
~ MAX.
.358(9.09) MAX
-.:;~~ ,~,,~~~
• High Gain: hFE 50 Minimum @ 50 Amperes, IC
• High Current: 75 Amperes, IC (Peak)
0.063(1.60) DIA.-\
0.057(1.45)
L
I
.426(10.82) MIN.
CASE TEMP.
REFERENCE
POINT
.20(5.00)
0.162(4.09)
D64DV
D64EV
0.15(3.84)
2 HOLES
maximum ratings (T C =25°C)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
(unless otherwise noted)
D64DV6/EV6
450
600
8
5
50
75
125
10
20
180
D64DV7/EV7
500
700
8
5
50
75
125
10
20
180
UNITS
Volts
Volts
Volts
IC
ICM
ICSM
Is
ISM
Po
D64DV5/EV5
400
500
8
5
50
75
125
10
20
180
TJ. TSTG
-65 to +150
-65 to +150
-65 to +150
°C
R8JC
0.7
0.7
0.7
°CIW
h
300
300
300
°C
SYMBOL
D64DV
D64EV
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @Tc = 25°C
Operating and Storage
Junction Temperature Range
0.440(11.18)
0.420(10.67)
DEVICE CIRCUIT
VCEO
VCSO
VESO
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
515
= 25° C)
electrical characteristics (T c
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
VCEO(sus)
400
450
500
-
--
Volts
ICEV
-
-
-
-
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = .5A)
(Vclamp = VCEO Rated)
Collector Cutoff Current
(VCE = Rated Value, VSE = -1.5V)
Emitter Cutoff Current
(VES = 4.5V, IC = 0)
(VES = 1.5V, IC = 0)
D64DV5/EV5
D64DV6/EV6
D64DV6/EV7
TJ = 25°C
TJ = 150°C
D64DV
D64EV
IESO
-
-
1.0
2.5
mA
-
350
350
mA
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE 23
FBSOA
on characteristics
DC Current Gain
(Ic = 75A, VCE = 5V)
(Ic = 50A, VCE = 5V)
(Ic = 20A, VCE = 5V)
Collector-Emitter Saturation Voltage
(Ic = 75A, Is = 5A)
(Ic = 50A, Is =4A)
(Ic =20A, Is =2A)
hFE
VCE(sat)
Base-Emitter Saturation Voltage
(Ic = 75A, Is =5A)
(Ic =50A, Is = 4A)
(Ic =20A, Is =2A)
VSE(sat)
25
50
100
60
135
250
-
-
-
2.2
1.7
1.15
3.0
2.0
1.5
V
-
2.8
2.45
1.95
3.5
3.0
2.5
V
TYP.
MAX.
switching characteristics
Resistive Load
Delay Time
VCC = 250V
Rise Time
IC =50A
Storage Ti me
IS1
Fall Time
tp = 50 ,",sec
=2.5A, IS2 = 5A
DV
EV
DV
EV
td
-
0.09
.09
.5
.5
tr
-
.5
.5
1
1
ts
2.55
2
5
3
tf
-
1.4
.64
3
1
Po
VF
VF
VF
-
Trr
TON
,",S
emitter-collector diode characteristics
Power Dissipation
Forward Voltage
Reverse Recovery Time
(IF = 50A, dildt = 25A/,",sec, RS1E
Forward Turn-On Time
(IF =100A, di/dt =100A/llsec)
Single Cycle Surge Current (60Hz)
(IS1
(IF
(Ip
(IF
=0)
=25A)
=50A)
=50A, TJ =150°C)
=.250.)
IFSM
Thermal Resistance
ROJC
516
1.95
2.60
2.30
125
3.20
3.80
3.50
Watts
Volts
Volts
Volts
-
3.85
10.0
,",sec
-
0.75
1.5
,",sec
-
150
Amps
1.0
°C/Watt
TYPICAL CHARACTERISTICS
1000
1000
v-
"'-
,/
TJ =ISO°C/ V
z
~
to
IZ
ILl
0:
0:
::l
U
/
/
/
100
~
rr-
.
C
...-
IZ
VeE' SV
ILl
0:
0:
::l
U
I~ .'51'
iii
~
W
10.0
to
Ie = IDA
Ie = 25A
g
"~
B
11
6
u
4
...J
...J
3
\
\
\
:E
1\
2
,
ILl
>
0
I0
ILl
...J
0
"
II
.01
-
a::
...J
Ll
u
Is,
1.0
u
;:
0.1
1.0
...u-
BASE CURRENT (AMPERES)
V
~
V V
~
F-"
--
;;l 0.7
10
J
..L
0:
ILl
l-
TJ' 25'C
0
..
L
V
I-
5
u.
~
rr: 5.0
et
en
7
I/Pf=50
J
I-
Ii:
ILl
II
0
::l
9
0:
ILl
II-
f'!
/
>
z
\
10
g
:E
1&1
~
0
1\
1&1
J /9f'IOO l - I--
TJ =2S 0 C
Pf=Ie/l sl
et
"
I II
Ie • SOA
>
I--Pf=IO
~
75
50
10
I/Pf=20
Ie, COLLECTOR CURRENT, (AMPERES)
FIGURE 3. COLLECTOR SATURATION REGION
FIGURE 4. VeE (SAT) VS Ie, TJ = 25°C
Iii
~
Iii
0
~ 10.0
TJ = 150'C
~
/I
1/=le
~
1/=100J..
sl
0
>
z
fi0:
5.0
il
::l
~
(I)
:Ii
ILl
I
rr:
~~
0
I0
1&1
0
1.0
~ 0.7
..
id
~
~
...J
o
>
z
o
1/'25
~rr:
::l
!i
/
'"
0:
ILl
V V ~V
!:::
...J
...J
V
T;r=25°C
p, = leI ISI
~
/
/
0:
ILl
I-
0
L
10.0
~
~
1
j
0
~
1/=SO
I
",P'IO
l-
I:::
:E
ILl
,
~
~
ILl
'"et
CD
~
~ t:::
~ ~ I::::-
--
~
1/, =IO~_
i-,8,=25
f-P"SO
Pf=IOO
~
~
10
50
~
>
75
Ie, COLLECTOR CURRENT, (AMPERES)
1.0
50
10
IC.COLLECTOR CURRENT (AMPERES)
FIGURE 5. VeE (SAT) VS Ie, TJ = 150°C
FIGURE 6. VSE
517
(SAT)
VS Ie, TJ = 25°C
7S
TYPICAL CHARACTERISTICS
~IO.O
10000
~
'"
TJ=ISO°C
f3=IelrBI
J=25°C
(l)
~
-
o
> 5.0
z
o
Go
~
/f3=10
!c
'"ffi
.... f3=25
.... f3=SO
.... f3=100
~
:E
'",
'"~
1;
.,
;;; 1.0
~
1.0
::::::
~
~ ....~
--==
-
(l)
z
0
l-
i
'"
'"a::::>a:
= 150°C
;"
.
.=."
.'
'"
z
X
o
I-
-
-
Id
~
b
td:
o
I0
'"
~
'"
..J
oJ
0.0 I
0.0 I
10
S
(l)
z
FIGURE 10. TURN-ON TIME (RESISTIVE LOAD)
(D64EV ONLY)
u
-
TJ=2S D C
- - - - TJ= 100°C
- . - . - TJ= 150°C {
Vee = 2S0V_ _ 1- t
1 8 ,=1 c /20
5
i-'"
182 = 1e"O-1-VSE=-'SV
Ip = SO fL -See
'"~:E
SO
_10.0
10.0
:::
10
Ie. COLL.ECTOR CURRENT (AMPERES)
FIGURE 9. TURN-ON TIME (RESISTIVE LOAD)
(D64DV ONLY)
...
5
I
SO
I:c. COLLECTOR CURRENT (AMPERES)
-- -
/~
.,"
1.0
/
TJ =2S·C
- - - - - TJ=IOO·C
TJ=IIIO·C
-Vee = 2S0V
:tel = :te 120
Ie2' le liO
VeE =-5V
tp = 50fLsee
.=.
...
;>"...;
'":Ej:
(l)
?
/
/
::
z
X
V
~
,/
I- +1-
----
........ I
- ......
II:
II:
:::>
/
a:
a:
a
~u
w
..J
0.1
I
If
.'"
'Il'
i--"
o
a:
~
~
l'f
~
o
"
r:..:: ....; }ts
en 1.0
'"
w
--:- ........
i
IZ
'"...z
6
u
I
-- -
a::
0
i
~
/
/
/
I-i-- .-.-1.-"
:::>
u
a:
:;:
~
~
O. I
'=
/
~/
,/
I-
II:
0
/
~
ffia:
0
0
tr
~.
Vee=250V
Iet=1e/2O
1!J2=le/60
VBE=-SV
'p'SOfL sec
(l)
~
Z
TJ=2SoC
-----TJ=IOO°C
TJ=150·C
-
:E
j:
/;~ / .
I-
1.0
u
//'
::::::.
o. I
100
FIGURE 8. CAPACITANCE (CcBO)
Ir
'p'IIO,. .. c
%
10
I
Vea. COLLECTOR-BASE VOLTAGE (VOLTS)
- -
III
- - -
o
CURRENT (AMPERES)
TJ=25°C
TJ=IOO°C
- . - . - TJ=ISOoC
Vee - 250V
:til' = :Ie 120
III2 - :tell 0
VBE --SV
:E
j:
r--
r--
1.0
::I..
~
1000
100
FIGURE 7. VBE ISAT) VS Ie, TJ
::
z
~
75
50
Ie. COLLECTOR
-;;
'"
o
a:
:::>
'"o
oJ
..J
o
5
10
O. I
SO
5
10
50
Ie. COLLECTa:! CURRENT (AMPERES)
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 12. TURN-OFF TIME (RESISTIVE LOAD)
(D64EV ONLY)
FIGURE 11. TURN-OFF TIME (RESISTIVE LOAD)
(D64DV ONLY)
518
TYPICAL CHARACTERISTICS
..
III
::Ii
i=
Tj
I
T7"ZSOC'
- - II, "Ie 120
-----IB'·Ie/SO
Vee" 2S0V
5 Ip "50,. •• e
VBE" OV
III
I!>
c
!!i
....
4
v~
,-
m
Q
III
3
N
~~
::i
c
::Ii
a:
Q
z
2
NOTE'
I NORMALIZED TO
's(Q)ZSoc (REF. FIG. 10)
I
I I
" 1-,-f-'"
~~~
RlIE'loon
r-R
~~
'/
" Ion
BE
""::::. ....... RBE=looon
....
--
-
V--
.....RSE=loon
RBE=lon
RBE = In
NOTE:
NORMALIZED TO Is
~ 25°C
RBE=ln-
f-
:,....1'"
I1111
TF
'"
'"....!
I!>
Z
:;:
/,.
U
....
~
,,""
/
".... ....
~
1.0
Ic
~
....::
u
III
~
.;"
~p
w
:;
t=
'"
z
:;:
"....
~
t=
::>
o
....
u
0, I
5
50
w
'"a:
C
0
....
~
1.0
/'
\I)
Q
w
N
~
::Ii
0.6 Ic"50A
Ic"ZOA
0.6 Ic"IOA
~TJ
0
z
./
1.- ....
......
....
~..;
............-
'e
~
}f
#
~.
>....
i.--"
~
10
50
1.6
Ie=IOA
Ie =20A
Ic=50A
-w
::;
i
~
1.4
#
1.2
>=
i
w
"«a:
CLAMPED INDUCTIVE LOAD
L = 100iLh
VCE ICLAMP' = 250V
II::
t-
I ....
FIGURE 16. CLAMPING INDUCTIVE TURN-OFF TIME
(D64EV ON L Y)
Ic l IB' = 20
VBE= -SV
~
~"
:I.e' COLLECTOR CURRENT (AMPERES)
~
=ZSoC
......---
""""P: r-..
o
10
-
-
a:
o
...---:::::
1.2
-rT11T
,-
w
FIGURE 15. CLAMPING INDUCTIVE TURN-OFF TIME
(D64DV ONLY)
w
:;
:--"BE" lon'RaE" In
-- -- '- :: }s
-
a:
a:
W
1.4
-- .-
1.0
..J
..J
1.6
1'- .....
100
TJ= 2SOC
- - - - - TJ=IOO°C
TJ= 150°C
veE (CLAMPED) =2S0V
IL=IOO,.h
IB,=Ic /2O
XB2= Ie liO
VBE = -SV
Ie, COLLECTOR CURRENT (AMPERES)
.
"1000
'R;'loon
....
z
u
s
Vf..---
!::
I"-"
O. I
....
u
V
/
-- -
..
-
~
V
:l
o
u
/ ...... "
u
r
~
//
...
.....
-..::: ~ :::--~BE"lo.nJ
10
::
V'"
....z
'"a:a:
a
a:
~
~ RBE"1OO0Q
RaE "loon
;:...
FIGURE 14. NORMALIZED RESISTIVE SWITCHING
STORAGE TIME (RBE VARATIONS) VS
COLLECTOR CURRENT (D64EV ONLY)
- fs
l
://'
~-
:/1....
FllOi
I
_10.0
-
I"l'\
xc' COLLECTOR aJRRENT
10.0
TJ=25°C
- - - - - TJ'IOOOC
.- TJ = 1500 e
VCE (CLAMPED) = 250V
L ' 'OOiLh
18,'le /2O
I B2 ' le liO
VBE = -SV.
/f.'
V
o
100
10
FIGURE 13. NORMALIZED RESISTIVE SWITCHING
STORAGE TIME (RBE VARATIONS) VS
COLLECTOR CURRENT (D64DV ONLY)
u
V
,/
Ie, COLLECTOR CURRENT (AMPERES)
-.
V/ S;: t"'-.
~IRBE'looon
---- -
~
II
T;r" 25°C
6 - - - I B , " l e /ZO
- - - - 11l,"Xe/5O
Vee" 2S0V
I
tp " 50,. IIC
VBE "0 V
1.0
....0til
0.8 Xc'SO
'"
0.6
W
N
:::;
::;
a:
:tc' 5OA-
T;r' 25"C
Xc/:t.,· 20
vl l ·-5V
~c'2?~
CLAMPED INDUCTIVE LOAD
L' 100,.. h
VeEICLAIIII'" 2!10V
~c'IOA
«
0.4
~
~
::::::--
Xc"'OAXc' 2OA
0.4
0
z
0.2
0
O.S
1.0
I.S
2.0
i
0.2
0
0.5
1.0
1.5
Z.O
RATIO, IB,IIB2
FIGURE 17. STORAGE TIME VARIATION WITH IB2
(D64DV ONL YI
FIGURE 18. STORAGE TIME VARIATION WITH IB2
(D64EV ONLY)
519
TYPICAL CHARACTERISTICS
1.4.----.----,-----,-----:-------,
Ie=IOA
Ie' 20A
I(;=SOA
1.4
-III
1.2
::IE
;:::
~
...J
...J
~
c
1.0 Ie=SOA
III
aVI
~
I.Of--+-----:::~----+-----I------l
~
TJ =2So C
Ie/IBI= 20
~
100
""
120
TC ,CASE TEMPERATURE (·C)
FIGURE 25. TRANSIENT THERMAL RESPONSE
'iii
~
80
60
40
20
~
140
FIGURE 26. POWER DERATING
100
~
::IE
90
eo
'"
.... ~
70
I-
~
/:~
60
.~7
II:
~
50
717
u
Ii!
40
~
30
;
/
'1
fI)
S
z
///
20
~
z
!
v//
V
!I
V;'II
j!
fI)
1S
::I
~
10 0
- - TJ =25°C
- - - - - TJ =100·C
-- I
TJ =150·C
2
4
3
VTM , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIGURE 27. FORWARD CHARACTERISTICS
+6VDC
+250VDC
33
;SUR L
(NON INDUCTIVE)
(1"10 DUTY CYCLE)
+sv
NOTE' JUM~ER
I TO 2 (RESISTIVE)
2 TO 3 UNDUCTIVE
612
~SOI'-'"
4.7
r-----------,
.022
V
CLAM~
..----
~
II>
Ei
>
!i
6.0
~ ~ 2.0
/3f=IO
/3f=8
-
........-
0.2
=
f--~
~
4.0
8,
~
0.2
0.1
15
----
,-
"/' . /
.......-:: V
./
~y
~/
~
""
-~ ~
:;....--
2
4
6
8
10.0
Ie, COLLECTOR CURRENT (AMPERES)
15
FIGURE 4. VCElsatl vs Ic. Tc = 100°C
--~-Te=IOO°C
.....
- - Te =2S oC
.8, =lc/ISI
Tc=2S0C
CEBO
Q.
UJ
U
~
Z
0
> 2.0
Ir
1.0
0.8
ID
> 0.6
Q4
f-=-=-- : - 1.0
2
-- -- -
---
~ :::: "
4
6
8
10
Ic,COLLECTOR CURRENT (AMPERES)
-
--
~ 1000
.8,=2
~
1.5
2!
UJ
.
./
0.4
~
II>
~
,
,8,=6
j>
~ ;:;::::-
UJ
UJ
VI
e{
III
.8,=10
~V' ~ ,8,=8
V
10,000
6.0 f - - I---
....UJ
/
0.8
0 0.6
UJ
~ I--::
2
4
6
8 10.0
Ie, COLLECTOR CURRENT (AMPERES)
8.0
!:=
/
Te=IOO·C
.8f=lc IIsl
~ [lII.O
10.0
0
.8f ol5
a~
FIGURE 3. VCE lsatl vs Ic. T C = 25°C
In
S.O 7.010.0
~ ~
~ ~~
0.1
1.0
2.0
I
.... :.J
./
/
4.0
VI
Ir_
,8f=6
0.4
.OS
10.0
8.0
~
/
~ [lI 0.6
Ire{
1.0
Ir
/3f= IS
UJ~
:: g
Z
o
Ir
~_
.S
CURRENT (AMPERES)
FIGURE 2. COLLECTOR SATURATION REGION
10.0
8.0
4.0
.2
la' BASE
FIGURE 1. DC CURRENT GAIN
~
.1
.OS
IC ,COLLECTOR CURRENT (AMPERES)
!i
"'
..........
t- Tc '25°C
VCE=IOV - - -
I
:::l
o
u,
1-
Ic=ISA
-- -- -
(3
~
e{
u
U
,8,=10
.......
100
IS
I
2
S
r-10
~
20
-
VR,REVERSE VOLTAGE (VOLTS)
FIGURE 6. CAPACITANCE
FIGURE 5. VBE Isatl vs IC
525
.......
~
50
100
1.0
.8
.6
1&1
~
TC"IOO'C
TC=25'C
VCC '250V (20QVI,
lal =IC /6 (Ic15)
.4
j:
Z
:i:
I:!
~
I-
z
II!
a:
B
a:
~
~
..J
..J
.2
I
.08
.06
--""'-
10.0
8.0
6.0
...
4.0
II>
~
/tr
vL
t p '50"SEC
~
~::l
SEE FIGURE 17 FOR
TEST CIRCUIT
~-
'-::::: ;::.
~
j:
z
i:
0
l-
==
i
II>
td
1.0 '---.8
I-
z
.6 r--.4
1&1
'd
a:
a:
:::>
.04
0
.02
I0
a:
....
0
...
.2
..J
..J
8
8
.0 I1.0
2
4
6
8
IC,COLLECTOR CURRENT (AMPERES)
10
15
~ts
I
-0
----
I
/'
~
II>
::l
~
j:
~
:i:
1\
7'
-- - -- --
_-
~.
~
.~
..... 'r-.
--
--~
IBI"le /6 ,IB2=le /S (I a ,=Ia2 :Ie/5 I
'p'SO"SEC (tp :20p.SEC)
SEE FIGURE 17 FOR
TEST CIRCUIT
I
----=::t---
_'L f-4
2
--
f-'
f--
~
6
-----I-"
10
8
IS
FIGURE 8. TURN-OFF TIME RESISTIVE LOAD
I \
I \,,
I
I
181
--
IC,COLLECTOR CURRENT (AMPERES)
VCE(CLAMPED)
90%lC
I
I
VCE
Is
- -
10.0
COLLECTOR CURRENT
I
I
f-.
Vec=2S0V (200V)
.1
1.0
FIGURE 7. TURN-ON TIME RESISTIVE LOAD
I
-
---Tc=IOO'C
2.0 r - - - - - Tc =2S 0 C
Cl>
~V
-
I:!
'\
iII>
10% Ie
!iii
...a:
a:
:::>
o
a:
~
~
~
182
-- -'---
5.0
--
- - - Te=IOO'C
2.0 - - - T e = 2 5 ' C (V ee :200VI
VCE(eLAMP)' 250V (V CEX I
1.0
~ IBI =lc /6 ,la2=Ic/S (IBI :r B2 =I c /51
=
.S
==
=
1,-
'p=SO "SEC,VaE(OFF)=-6V (tp :20j.L SEC) (VBE(OFFp':'6vI=
L=200"h
: - - SEE FIGURE 17 FOR
.2
~E:: CIRCUIT
t,.!.,,"
I
.05
:l
.02
8
.0 I
1.0
2
4
8
6
10
IS
le,COLLECTOR CURRENT (AMPERES)
FIGURE 9. INDUCTIVE TURN-OFF WAVEFORMS
2.0
1.7S
....
~
I
...
CLAMPED INDUCTIVE
I.S ;-- LOAO,L=200 "h (SO,u.h)
::;
II
1.0
Ic=2A""-::;:
.75
Ic=4~7
~
0
..&:
~
~
.5
~
TC =25'C
Jell BI =6 (5)
~
CLAMPED INDUCTIVE
i= 2.0 '- LOAD, L = 200"h (50j.L hI
SEE FIGURE 17 FOR
Z
TEST CIRCUIT
i:
...
I:!
i
Q
Ic=2A-
c(
~
a:
o
z
REFER TO FIGURE 10 FOR
NORMAL SWITCHING TlMES-
1
.4
~
1.0
.6
.8
1.0
1.2
1
1.4
I I
1.6
1.8
Ic=4A~
.S
Ic=4A
Ic=2A
~~
~
REFER TO FIGURE 10 FOR
NORMAL SWITCHING TIMES
I c =8A
Ic=ISA
o
2.0
~~
I c =15A
I c '8A
./
V
1.5
1&1
.25
.2
~
II>
~
z
o
~
~~
2.5
c
Ic=4A
le=2A
I e =8A
Ic =ISA
c(
a:
,
SEE FIGURE 17 FOR
TEST CIRCUIT
Q
N
...- Ic=ISA
I =8A
I c l l al =6 (5)
I:!
~
I
I
I-- Tc =25'C
li:i:1.25 I--
FIGURE 10. CLAMPED INDUCTIVE TURN-OFF TIME
.2
L
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
RATIO, I BI' IB2
FIGURE 12. FALL TIME VARIATION WITH 182
FIGURE 11. STORAGE TIME VARIATION WITH 182
526
2.0
100
--
30 r-- I IS
10
-
r--- r--
-- I-- a
-~
",
,
-
BONDING WIRE
LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
Tc=2SoC
- -1.0
,",0
,.......f'
16
15
14
Iii
IU
a:
1,\~ -
IU
Q.
~
IS2=Ie/5
fZ
~~
~
~
10
IU
a:
a:
VlJ
~
(">---(">
f0
\
"" "
III N"
100
10
VCEXIMAXI
D64VS3
6
IU
..J
...J
200300400
4
.!i
2
o
1000
D64VS4
D64VSS
o
VeE,COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIGURE 13. FORWARD BIAS
SAFE OPERATING AREA
~
~
l.°t~~]IE~lllisil~a~;I~E~I!
100
0.3~-L~~~~~~~~~~~~~~~~H4+ffi~~~~~
z
0.2
~
~ ~2~~~~~~~~~~~~~~~~~~~~~~~
II
. . . ~~
i~ O'I~mO'i1111;;;'mJlSL
--l 1~2 I
-l
l0.07
0.05
ffi
iii.ill
f-
i11.0~ SINGLE
PULSE
"
a: 70
0
f0
et
60
'"~
50
~7~~
'o~1
"""~fi~/"'G
,.... r-.... t'-..
~~
t"-..
~6'
et
a: 40
IU
1',
Q
a: 30
IU
~
DUTY CYCLE 0,' 11"2
DUTY CYCLE CURVES APPLY FOR
POWER PULSE TRAINS.
TIME I, REPRESENTS PULSE
WITH II'
~ 0 .02 """'.......Ir'7'..L.LJL.LLL-t-~+tttffi
a:
",r---. ~E'CO~o J
4~Oo..,,,,
'" ~
j
80
I-
II
0.03
J 71'tK-fHl-++-t-+t1ft!l
0.031-'1'9--F-t
~
II.
~O.OS
f-
~ t'-..
90
D=O.S
~+1II~~~-H~m-~~~~~~++H#~+1~~
<.J
<.J
'"
./
o
./
w
i
VCE=SV
V
......
~
...... r-TJ=O·C
TJ=ISO·y
'"
~
I-
Z
w
" "'-"
/'
FIGURE 2. DC CURRENT GAIN (VCE = 5V)
(4
12
a:
a:
10
:::>
/
". .... TJ=O·C
,/~ ...... .....
LL'
/'
~
="
w
~~
L
l-
t::
\
w
ci:
t
"tI
...J
...J
~A
8
\'1\\
4
1\
w'
~
'\\ ' .
1\
2
~\
o
30
10
\
\
6
w
~~\
/'
5
B
:;;
,/
I
10
a:
...... TJ=-40·C
I
1.0
FIGURE 3. DC CURRENT GAIN (VCE
10.0
a:
w
/
:il
w
Ii:
w
8
;::: 1.0
10.0
/
1-" ....
~~
/
/
~
13=25
a:
lI-
iw
ci:
'/
L
I
13=25
J
II
/
VI V/
w
J '/ I
~
J
o
/
HfJ· 5O
'I
iii
~
,,=)0
f-'"
13=1001
TJoIOO·C
(j ·lc/IBI
I
/
1=
...J
...J
fiGURE 4. COLLECTOR SATURATION REGION
I
L
~
t
=10V)
,,"50
". le/Ial
)0
1.0
la, BASE CURRENT (AMPERES)
,,-100
TJ -25"C
\
...........
0.1
.01
IC, COLLECTOR CURRENT (AMPERES)
~
TJ =25·C
IC' 2OA
...J
<.J
<.J
:t
III
Ic·IOA
I-
.........
/"
- TJ o 25·C
0
w'
I
Ic=5A
iii
...... .........
Z
\\ ~\
5
)0
30
IC, COLLECTOR CURRENT (AMPERES)
I
VCE=IOV
w
'\ \'~
(0
(00
100
I-
\~
/"
FIGURE 1. DC CURRENT GAIN (VCE = 2V)
"
~~\..
I""
./
...... TJ=-40·C
~ l\
S
10
IC. COLLECTOR CURRENT (AMPERES)
TJ=IOO·C
J
./
/./
.\
10
;{
~
I--'
./~ ""4- =O·C
<.J
o
".\.\~
V
z
-
TJ·IOO·C
~ )00 TJ=2S u C
:::>
V"
TJ=15~
V ......
u
./TJ=-40·C
I
z
«
I1"J=IOO·C
o
t;
W
...J
...J
/"
81.0
10'11
::::=:;;~
13=10
~
~
w
r--
~
10
10
30
30
IC, COLLECTOR CURRENT (AMPERES)
IC, COLLECTOR CURRENT (AMPERES)
fiGURE 6. VCE(SAT) VS. Ic. T J = 100°C
FIGURE 5. VCE(SAT) VS. IC' T J = 25°C
531
TYPICAL CHARACTERISTICS
10.0
10.0
13 =100JI:I=5Of-- ~ /:1-25
T~OI.50-C
I
J
13 " Ie/lal
P-Ic/IBI
I
I
I
/
I
/'"
~~
i-':
T~'25"C
I
I
//
1/13=10
II /
~
~
10
30
10
Ie. COLLECTOR CURRENT (AMPERES)
30
Ie. COLLECTOR CURRENT (AMPERES)
=150°C
FIGURE 7. VeE(SAT) VS. Ie. T J
FIGURE 8. VBE{SAT) VS. Ie, T J = 25°C
10.0
10.0
TJoIOO"C
p-Ic/IBI
J
T~·150·C
pOle/IBI
en
~
en
0
~
~
o
a:
a:
I:
~
w
w
:IE
w
I:
w
:E
w
~
'"
~
~
W
III
>
~
;;;-:
~~
~
~
en
<
CD
/:1=10
13-25
.........:::
;=
13 0 50
/:1-100
>
~
~~
=100°C
o
z
<
f-
<
~
,,
T~-25·C
TJ-'OO·C-"",,-TJ 0 150·C---
//
/' /"
0
f-
~
1'-..1--0
100
./
w
a:
a:
::l
0
a:
0
f0
O. I
0
0
10
-
"""";:-0
-
100
-= td
(0
Vea. COLLECTOR·BASE (VOLTS)
FIGURE 11. CAPACITANCE (CeBO)
~.
~ -' V" ". .... .... '"
W
...J
...J
Vcc "250 V
1a1"lc/20
Ia-Ie/IO
VlEa-5V
t p o 150,.SEC
/
~.~
fZ
........
tr
,/
"zX
~ ............
U
30
1.0
........... ........
/:1"100
FIGURE 10. VBE(SAT) VS.le, TJ :;: 150°C
crw
'"3
w
;:~5
13"50
~
10
TJ o 25"C
~
~
Ie. COLLECTOR CURRENT (AMPERES)
1000
~
::::: Oo'!"
30
10
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 9. VBE(SAT) VS. Ie. T J
~
~
W
III
1.0
o
~ §§§
....
13-10
/:1-25
/:I-50
/:1-100
20
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 12..
532
TURN-ON TIME (RESISTIVE LOAD)
(De8DS ONLY)
TYPICAL CHARACTERISTICS
1.0
10.0
TJ ·25·C
TJ=IOO·C---TJ=150·C---
u
w
Vl
/
L' ,
"
z
I
~
...u
~
...
V
~; L; ,
Vl
Z
w
c::
c::
::J
U
c::
0
t,
//
-=
...u
~.
Vee=250V
IBI= Ie/2O
1B2=le/10
VBE=-5V
t p '50,.SEC
o.I
~
...... _--
",,'"
-'
-
W
..J
..J
---:..
0
""""'=I
U
.0 I
~ ,,' i-""~
-
u
w
Vl
-=
"z
I
...u
~
...z
/
~
.........
~
~
1.0
cr
cr
r-
cr
I-
::J
U
...u0
-
tf
-
"'"'
-
--
W
..J
..J
0
-
U
td
-
-
"Iz
~.
r-.
~
-....
--. .
~
~
1.0
::J
U
c::
o
t;
W
..J
..J
- - .....-- -
...........
TJ =25·C
TJ= 100·C
TJ=150·C
-
J
:!
w
:;:
5
w
~
4
o
Iii
o
3
c::
w
~
~
... "
a:
2
.'
~~
Z
I
o
20
5
4
...o
::i
..:
~
o
z
2
I
L
f--
I
I
-::::: RBE=IKn
RBE'loon
--'-
-1-
--~
~---
10
-- ~
I
0
-"
::::::.....,-- - -~~.::..:- V;
f-
o ~I
~-
~
---
~
f-
--
-
RBE=looon
RaE"loon
RBE=lon
te
--.-
cr
::J
U
cr
o
t;
RBE= In
RBE= In
~4~"~
te
w
W
..J
..J
'" "'/
I
1.0
a:
RBE=lon
ts
~
i=
"rz
u
...
~
...
z
RBE = lOll
RBE'lOll
RBClll
RBE'ln
20
I
l.o::::~
-""
~/
----
lBI"le/2O
IB2=Ic/10
VBE=-5V
t~,
tf
-~
i-':
TJ=25'C
TJ= 100'C
TJ=150'C--VeE (CLAMP) =250 V
L-IOO,.h
..
,~
~
-~
tf
.".,-
--t;
8
O. I
10
.....
f-.:= Frs
W
I-- _ _
--
--
ts
~'
-=
:;:
RBE=looon
RBE=loon
_10-
..-... e:: ..-.- f--_'.:::::
~~
/.--:.
.....-
u
w
Vl
~
3
",,-
1--
....
FIGURE 16. NORMALIZED RESISTIVE
SWITCHING STORAGE TIME (RBE VARIATIONS)
VS. COLLECTOR CURRENT
(D66DS ONLY)
NOTE- NORMALIZED TO
t.@ 25°C FROM
FIGURE 15
,.......
w
Vl
I---
Ie, COLLECTOR CURRENT (AMPERES)
TURN-OFF TIME (RESISTIVE)
(D66ES ONLY)
Jal=le/2O
IBI"lc/40 - - - TJ=25°C
Vce=250V
tp=50,.SEC
VaE=OV
6
w
...
------- ---
RBE=IKn
RBE=loon
10.0
7
N
~~
,"" ~
Ie, COLLECTOR CURRENT (AMPERESI
c::
~
NOTE, NORMALIZED TO
ts @ 25'C FROM
FIGURE 14
..
"'~ --- --
::i
~
o
Vee=250V
1BI= 1e/2O
1B2 = Ie/IO
VBE=-5V
t p =50,.SEC
10
TURN-OFF TIME (RESISTIVE)
(D66DS ONLY)
i=
..,/
....
20
IBI'JC/20
lBI=le/4D - - - TJ = 25·C
Vce' 25OV
t p =50,.SEC
VBE"OV
N
I
~
Vee' 25OV
IBI' Ie/2O
1B2=1c110
VBE '-5V
tp '5OI'SEC
10
FIGURE 14..
}tf
0, I
~
i=
V
Ie. COLLECTOR CURRENT (AMPERES)
8
FIGURE 15.
""
""
I
20
10.0
w
c::
c::
//
0.1
10
FIGURE 13. TURN-ON TIME (RESISTIVE)
(D66ES ONLY)
"-
I~
,,-
..... 1'"
V
Vl
Ie, COLLECTOR CURRENT (AMPERES)
Vl
--
w
I
u
w
TJ ·25·C
TJ·IOO·CTJ =150·C
20
Ie. COLLECTOR CURRENT (AMPERESI
10
20
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 17. NORMALIZED RESISTIVE
SWITCHING STORAGE TIME (RBE VARIATIONS)
VS. COLLECTOR CURRENT
(066ES ONLY)
FIGURE 18. CLAMPED INDUCTIVE
TURN-OFF TIME
(D66DS ONLY)
533
TYPICAL CHARACTERISTICS
10.0
G
1.6
-
-
w
til
.;!
W
::;:
.- '-
--
----
to--
;::
Cl
Z
:;:
U
....
~
....z
r;.::
~w
~
r-....
..J
..J
oU
O. I
-
.......
'- """'-
....-
1-
}
TJ=25°C--TJ= 100oC----ts TJ=150oC--VCE (CLI>.MP) = 250 V
L=IOo,.h
}
....
1.0
w
a:
a:
::>
u
a:
...
1.4
tc
IBI=Ic/20
IB2=Ic/10
VBE=-5V
w
;::
......
....0
1.0
W
N
~
:::;
::;:
a:
/ ' ~V
0.8 IC=20A
V
IC=IOA ~
0
z
Ic=5A
0.4
0.5
1.0
;::
FIGURE 20.
.,/ Ie=5A
./
~V
~~
,
~ 1/
1.2
Cl
«
0
....
til
1.0
0
A~
w
N
:::;
«
::;:
a:
0
z
O.B
c=20A
IC'IOA
0.6 Ic'5A
STORAGE TIME VARIATION
WITH IS2
(D66DS ONLY)
A
~
~
~
'" ......
, / ' Ic=IOA
1.4
IC"20A
V V
-::;:
w
TJ = 25°C
I c/IBI=20
VBE=-5V
CLAMPED INDUCTIVE
LOAD, L=IOOl'h
VCE(CLAMP)'250V
1.2
~
..J
..J
~
""':
1.0
w
N
:::;
«
.::;:
O.B
a:
W
Ic'20A
Ic'IOA
Ic'5A
b:::=
-;P
0.6
0.5
1.5-
1.0
0.5
2.0
1.0
.....-::
1.2
~
;::
...0«
1.0
w
N
:::;
«
::;:
a:
0
Z
0.8
c'20A
Ic·IOA
0.6 I c '5A
0.4
~
~
~
V
~
~
~
..,~ ~
~ :;;.::: f-'
.,.,
Ic'5A
Ic'IOA
Ic'20A
FIGURE 22.
1.4
~
w
::;:
;::
a:
FALL TIME VARIATION WITH I S2
(D66DS ONLY)
TJ=25°C
Ie/I BI·20
VBE '-5V
CLAMPED INDUCTIVE
LOAD, L=IOOl'h
Ve'E(CLAMP)' 250 V
1.2
w
>
0
til
til
0
a:
u
,..-
IC'20A
1.0 IC' IOA
I c'5A
--
~
...... Ic=5A
IC'IOA
I c ·20A
0
W
N
:::; O.B
«
:;;
a:
t7
0.5
2.0
1.6
TJ= 25°C
IclIBI=20
VBE'-5V.,
CLAMPED INDUCTIVE
LOAD, L= 10O,.h
VCE(CLI>.MP)" 250 V
..J
..J
1.5
RATIO, 191/182
STORAGE TIME VARIATION
WITH IS2
(D66ES ONLY)
1.6
w
Ic=20A
z
FIGURE 21.
E
Ie' 5A
Ic' IOA
0
RATIO. 1811182
::;:
---- ~
;::
0.4
0.4
1.4
2.0
1.6
TJ=25°C
IclIBI=20
VBE'-5V
CLAMPED INDUCTIVE
LOAD, L=IOO,.h
VCE(CLI>.MP) =250 V
w
a:
1.5
RATIO, 181/182
1.6
~
...... I C'20A
0.6
20
FIGURE 19. CLAMPED INDUCTIVE
TURN-OFF TIME
(D66ES ONLY)
w
::;:
IC'5A
Ic= lOA
~
IC. COLLECTOR CURRENT (AMPERES)
1.4
/. t/
~~V
~ ~-
w
«
10
./ .,/
l?
«a:
~
""---- t--
I
.,/
1.2
til
r--":- }f
~
-::;:
TJ=25°C
IclIBI=20
VBP-5V
CLAMPED INDUCTIVE
LOAD, L=IOOl'h
VCE(CLI>.MP) =250 V
0
Z
1.0
1.5
0.6
0,4
2.0
0.5
RATIO. 181 IR2
1.5
1.0
2.0
RATIO, 181/182
FIGURE 23. FALL TIME VARIATION WITH 182
(D66ES ONLY)
FIGURE 24 ..
534
CROSS-OVER TIME VARIATION
WITH IS2
(D66DS ONLY)
-
TYPICAL CHARACTERISTICS
1.6
1.4
:i>
w
:E
;::
100
TJ = 25"C
I C/I BI =20
VBE=-5V
CLAMPED INOUCTIVE
LOAD, L=IODl'h
VCE(CLAMP) =250 V
,,/
1.2
/. ~
II:
w
1.0
0
II:
U
0
w
N
:::i
..:
::;;
II:
0
z
0.8
V . / ' -;: ~
A
~
IC'5A lh
Ic'IOA
0.6 Ic=20A
~
"'~; ):S20~SEC~ ~~
~I
rr-
~ Ic=IOA
I--' Ic=5A
iii
1"
:~"
w
II:
W
"-
~
~I-"'"
10
1,,\
u
II:
o
t;
U
u'
O. I
1.5
1.0
,.0
2.0
-w
DUTY CYCLE =. I
z
..:
0
.1
w
DUTY CYCLE=.05
"-
~
15
DUTY CYCLE·.OI_
...J
10
TJ=25°C
t - - I-L-IOO I'h
St--
200
i
.01
II:
w
/
J:
....
....z
r\
l-.YaE=-Sv@.sn
lal'lc/IO
100
..:
,
....
!j
DUTY CYCLE=.2
U
20
0
...J
...J
10JO
DUTY CYCLE =.5
~
u
II:
0
~:
I
;::
....
..:
w
U
)0
10
w
II:
w
u
w
1\.\
10
FIGURE 26. FORWARD BIAS SAFE
OPERATING AREA
iii 25
=>
~5
I\,
VeE. COLLECTOR EMITTER VOLTAGE IVOLTSI
30
u
It
--
Ic OR rCM LIMIT
THERMAL LIMIT SECOND BREAKDOWN
LIMIT
TJ =25"C
DUTY CYCLE S I %
o
~
\
r\
1.0
~
...J
RATIO. I Bl- IS2
....
z
.. c: .. ,.
~
\
\
"',1\
:::>
FIGURE 25. CROSS-OVER TIME VARIATION
WITH 182
(D66ES ONLY)
II:
II:
~MSEC
W
II:
II:
~
0.5
5
OOMSEC'-~,
~
1
z
0.4
...:E
11"101
....
~~
>
0
III
III
IC=20A
V
w
"'-
300
.001
iii
z
PART 5
..:
II:
/T PART6-~
....
~P~RT7
400
I
/rLEPULSj
.000
.000001
500
.00001
.0001
VCE. COLLECTOR EMITTER VOLTAGE (VOLTSI
g
II:
0
....
u
..:
u.
Cl
Z
;::
..:
BO
70
r...... ~oo\'lll
-~4.te.o...o\'
I"
"
IV~
60
50
II:
w
0
40
;:
llE"/i.
~~""G
I
~-i!
..........
~ o~
~~
K
II:
w
30
0
Co.
20
"- ......
't'\,.
10
o
o
20
.1
FIGURE 28. TRANSiENT THERMAL RESPONSE
~~
~
90
.001
PULSE WIDTH. TIME IN SECONDS
FIGURE 27. REVERSE BIAS SAFE
OPERATING AREA
100
/
--~
~
40
60
80
~
100
120
Te. CASE TEMPERATURE I'C)
FIGURE 29. POWER DERATING
535
140
160
10
TYPICAL CHARACTERISTICS
DIODE CHARACTERISTICS
20
lIT
a:
TJ'2S"C
.TJ=IOO"C----TJ"ISO·C--
w
Q.
~
IZ
t-
w
a:
a:
:>
u
o
~
a:
~
10
a:
~
V
o
u.
II)
"
:>
o
/' I
z
'/1
~
z
.11 /
~
~
.
~
.!:-
I
0.0
// V
1.0
3.0
2.0
S.O
4.0
VTM. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIGURE 30. FORWAR.D CHARACTERISTICS
+6VDC
+250VDC
33
; 12.S0RL
(NON INDUCTIVE)
(1"10 DUlY CYCLE)
NOTE' JUMPER
I TO 2 (RESISTIVE)
2 TO 3 (INDUCTlVE
+5V
;3"l::-
50" .•
4.7
6r2
,-----------,
.022
V
CLAMP
270
j-IBI '!a2
+~ I
DEVICE UNDER TEST
I
66
I
I
L------J--J
D44VHI
100
* =SELECT ,
RI FOR+I BI = 1.0 AMP
R2 FOR - IBI =2.0 AMPS
=IB2
-6VDC
FIGURE 31. SWITCHING TIME TEST CIRCUIT
536
HIGH POWER
D66DV5,6,1
NPN POWER DARLINGTON
TRANSISTORS
The General Electric D66DV and EV are high current power
Darlingtons. They feature collector isolation from the heat
sink, and internal construction designed for stress-free
operation at temperature extremes and quick connect electrical terminals. They are designed to meet UL creep, strike
and isolation voltage. Major applications are for motor
controls, switching power supplies, and UPS systems.
Features:
• High Voltage: 400-500 VCEO(SUS); 50D-700 VCEV
D66EV5,6,7
500-700 VOLTS
50 AMP, 125 WATTS
~:lT~
!ILu' +1!0~®'~
~
f
i -.
I
@
E
T~P~:
l
I
IT.
~
R
CASE STYLE D66
DIMENSIONS ARE IN INCHES
AND (MILLIMETERS)
ORIENTATION OF THE
FLAT IS NOT CONTROLLED
0
~1
x
:
AA1I--AB~,' .. .L
.I
~
1 -r=¥==FTII ~tt~ n~-.L
K2
t
• High Current: 75 Amperes, IC (Peak)
1
Hr-I
• High Gain: hFE 50 Minimum @ 50 Amperes, IC
(hFE = 135, typical)
I
A~
X2
~I.:
S
D66DV
AC
D66EV
INCHES
METRIC
S
INCHES
MM
MIN MAX
Y
M
MIN
Y
Pot
MIN
A
1.505 1.540 38.22 39.12
F
.120
G
.605
H
.940
MAX
....
.132
.9IlO
l
MM
MIN -,-MAX
.510
12.57 12.95
S.495
AD
METRIC
I MAX
a35
T
.150
.170
15.36 lMO
U
.985
1.015 25.01 25.80
2aB7 24.19
V
.450
REF.
3.04
lIT
3.81
4.32
1'.43 REF .
J
.00'
-
'.80
-
W
.HIO
'1
.120
.132
3.04
;1.35
X
.050
.058
'2
,171
.184
4.34
.005
.073
1.65
1.85
.184
.192
4.57
4."
4.88
1."'-
L
Y
.157
.117
3.99
4.50
"
.484
.484 11.78 12.30
Z
1.180 1.192 29.97 30.30
N
.247
.255
6.27
6.48
AA. 130
.165
3.30
P
.210
230
5.33
5.84
AB.684
.704
17.37 17.90
a
.275
REF.
7.00
REF.
AC
.031
.035
.78
.90
R
.970
REF. 24.64 REF.
AD
.100
REF.
2.54
REf.
4.57
1.27
1.47
4.30
DEVICE CIRCUIT
maximum ratings (T C = '25°C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
D66DV
D66EV
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @TC=25°C
Operating and Storage
Junction Temperature Range
(unless otherwise noted)
SYMBOL
VCEV
VCEO
VEBO
D66DV5/EV5
500
400
D66DV6/EV6
600
450
D66DV7/EV7
700
500
UNITS
Volts
Volts
Volts
8
8
8
Ic
ICM
ICSM
IB
IBM
Po
5
50
75
125
10
20
125
5
50
75
125
10
20
125
5
50
75
125
10
20
125
TJ, TSTG
-40 to +150
-40 to +150
-40 to +150
°C
VISOL
2500
2500
2500
V(rms)
4
4
4
Isolation Voltage
thermal characteristics
Thermal Resistance, Junction to Case
See page 845 for mounting and handling considerations.
537
A
A
Watts
electrical characteristics (T c = 25 0 C)
I
CHARACTERISTIC
(unless otherwise specified)
I SYMBOL I
MIN
TYP
VCEO(sus)
400
450
500
ICEV
-
-
MAX
UNIT
-
Volts
10
2.5
mA
350
350
mA
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = 1A)
(Vclamp =VCEO Rated)
Collector Cutoff Current
(VCE = Rated Value, VSE = -1.5V)
D66DV5/EV5
D66DV6/EV6
D66DV7/EV7
TJ = 25 DC
TJ = 150DC
Emitter Cutoff Current
(VES =4.5V, Ic =0)
(VES = 1.5V, Ic = 0)
D66DV
D66EV
IESO
-
-
-
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 23
on characteristics
DC Current Gain
(Ic =75A, VCE = 5V)
(Ic =50A, VCE =5V)
(Ic = 20A, VCE = 5V)
hFE
Coliector:"Emitter Saturation Voltage
(Ic =75A, Is = 5A)
(Ic =SOA, Is = 4A)
(Ic = 20A, Is = 2A)
VCE(sat)
Base-Emitter Saturation Voltage
(Ic = 75A, Is = 5A)
(Ic = 50A, Is = 4A)
(Ic = 20A, Is = 2A)
VSE(sat)
25
50
100
60
135
250
-
-
-
2.2
1.7
1.15
3.0
2.0
1.5
V
-
2.8
2.45
1.95
3.5
3.0
2.5
V
switching characteristics
TYP.
Resistive Load
=250V
Delay Time
VCC
Rise Time
=50A
IS1 =2.5A, IS2 =5A
tp =50 J.lsec
Storage Time
Fall Time
tei
IC
tr
ts
tf
-
MAX
DV
EV
DV
EV
.09
.09
.5
.5
.5
.5
1
1
2.55
2
5
3
1.4
.64
3
1
J.ls
emitter-collector diode characteristics
Power Dissipation
Forward Voltage
Reverse Recovery Time
(IF = SOA, di/dt =25A/J.lsec, RS1E
(IS1 = 0)
(IF = 25A)
(IF = 50A)
(IF =50A, TJ
=150DC)
=.250)
Forward Turn-On Time
(IF = SOA, di/dt = 100AlJ.lsec)
Single Cycle Surge Current (60Hz)
125
3.20
3.80
3.50
Watts
Volts
Volts
Volts
Trr
-
3.85
10.0
J.lsec
TON
-
0.75
1.5
J.lsec
-
150
-
1.0
Amps
DC/Watt
ROJC
538
1.95
2.60
2.30
IFSM
Thermal Resistance
-
Po
VF
VF
VF
TYPICAL CHARACTERISTICS
1000
1000
..
I-'
v
z
TJ '150 0 C
;;:
'"
fZ
t.J
0::
0::
100
::>
u
u
/
.;
...
25 °;'
1\
/ - ~\.
V
~
/
/V
:r---r 100°C
r--
0
~
/'
~
-
z
;;:
~~
fZ
VeE '5V
~
I'---
W
0::
0::
100
::>
0
0
/
...
11'1\ \
10
100
/"
/
- I"--t-."
VeE=IOV
y/
~
10
1.0
V
~
'Aloooc
*25°J
.;
.c
7h
~
/' ~
V
n/
0
//
:r
TJ • 150°C
'"
,\
1
\\
\\\\
\1;\
\\ \~
VlC
10
1.0
1000
10
100
1000
Ie, COLLECTOR CURRENT (AMPERES)
Ie, COLLECTOR CURRENT (AMPERES)
FIGURE 1. DC CURRENT GAIN (VeE = 5V)
FIGURE 2. DC CURRENT GAIN (VeE= 10V)
Cii
~
0
>
i;J 10.0
en
I~
!:i
0
Ie = 25A
~
~
~
9
0::
III
ff-
B
7
t.J
6
&:
5
~
~
u
-'
-'
0
u.
III
I
TJ ' 25°C
/:If' IelIsl
0
0
fi
I
f-
.01
/
i
w
TJ • 25°C
1.0
0
0.1
1.0
~
u
'"
>
10
Is, BASE CURRENT (AMPERES)
V
/
0::
w
ff-
\
3
I
V
UI
4
//:If '50
/
5.0
::>
\
\
\
r-r-
:;
0::
\
Pf'IOO
I
>
z
\
\
III
c:I
10
'"':i
!«UI
I
0::
III
ffI
0::
o
f-
u
III
-'
I.0
~ 0.7
is
~
/
V VI
I V~V
~
i
III
6o
II
~
10
~
~
I
/
J
10.0
~
/:1'50
/:1=100/
~o
>
z
o
/:1'25
I
~
~
~
UI
0::
W
ff-
" /:1'10
/:If 0 10__
i
w
~
I
~~
W
UI
5.0
z
o
Q.
w
fi
It:
VP=IO
:::>
!cen
It:
W
~
::E
':'
w
-
en
;j!
~j;j'
~
---=
1.0
~
~~
~~
::::""0-.
~
CI
z
FIGURE 8. CAPACITANCE (CcBO)
5:
u
....
I::::..
l-
o. I
z
'":::>
CI
/.
z
%
u
l-
It:
It:
...
i
--
Id
~
o.I
t-.....
I-
~
/
/
"
,/~
V
L
....... 1--'
I
-- -
Z
'"
:::>
td:
u
It:
0
It:
ti
0
I-
11.1
..J
U
5u
~
..J
0.0 I
5
0.0 I
50
10
:Ie. COLLECTOR CURRENT
.
u
on
~
w
::E
;::
CI
Z
'"
-
./
... /'"
.t'
UJ
/
/
...
w
;::
'7
CI
V
./
./
I
5
%
~
~
-
---=
- )Is
-- .-~!
........
r-
.~
~
~
i'"
It:
~
~
50
-~
1.0
a
o
'-'
10
-
-
U
11.1
..J
..J
'Il-'~
0.1
z
IZ
11.1
It:
It:
i-"
w
TJ =25°C
TJ"IOO"C
TJ"150"C
Vee = 250V
181 = l:e 120
Iez' Xe llO
V BE "-5V
'p' 50/,S8C
::E
....
~
./
If
---
..:!-
......
i-"
~u
I-...
'-I~
./
It:
It:
a
•.u
....
1.0
IZ
FIGURE 10. TURN-ON TIME (RESISTIVE LOAD)
(D66EV ONL V)
~IO.O
-
X
50
1e. COLLECTOR CURRENT (AMPERES)
10.0
TJ=Z5'C
- - - - - TJ= 100'C
_ . _ .• TJ"150·C {
Vee' 250V_ _ """ I
IB,"Ie /20
5
IBZ'Ie"O-rVB[=-5V
Ip = 50 /L 'See
10
5
I
lAMPERES)
FIGURE 9. TURN-ON TIME (RESISTIVE LOAD)
(D66DV ONL V)
d
'-'
/
,
It:
It:
u
i~
I
Vee=Z50V
Iat"Xe/ZO
J:e2'Xe/60
V8["-5V
I,' 50/, sec
I-
~
-
I-
'"~
V
1;=
.L
-
..:!-
/.'
V~/
TJ=ZSOC
-----TJ=IOO"C
TJ"I500 C
u
••
Ir
/;-
100
Vea. COLLECTOR-BASE VOLTAGE (VOLTS)
= 150°C
---
w
2
j:
r-t--
10
I
CURRENT (AMPERES)
1.0
TJ=ZSOC
TJ"IOO'C
- . - . - TJ=150'C
vee' 250V
Xa," Xe /ZO
xaz'Xe /lO
VaE '-5V
I p ' 50 I'SlC
:l
'-'
r---
'-'
1.0
:
0
~
75
50
FIGURE 7. VBE (SAT) VS Ie, TJ
ien
z
~ 1000
100
1.0
Ie. COLLECTOR
u
~P=Z5
~P=50
~P=IOO
'-'
O. I
5
~-
....-
.t'
L
10
50
Ie. COLLECTOR CURRENT (AMPERES)
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 11. TURN-ON TIME (RESISTIVE LOAD)
(D66DV ONL V)
FIGURE 12. TURN-ON TIME (RESISTIVE LOAD)
(D66EV ONLV)
.
540
TYPICAL CHARACTERISTICS
'r 1
=
...
Z
j:
...
"!5
«
Vi-"
,/
~
3
N
t.-'~I>'
::i
'"a:Z
2
z
NOTE'
I NORMALIZED TO
t s(o)25·C (REF FIG.ID)
I
I I
~~
~
-.--- -
,-
V
0
V
1--
...Z
;::
'~IRBE=looon
RBE-IOon
....
V-
IIIII
10
'"
,/
0
3
::i
'"::IE
~
2
a:
z
tV
2S·C
TF
I
.:!w
~
~
":x:
z
,,"
u
//
f-
~
1.0
fZ
W
0::
0::
:::>
u
Ic
j
o
u
l--
/./
./
......V
....-::~
u
w
V
~
~
!t
:x:
u
,~
V
~
f;
L
b:::::::::
0::
o
u
F=!=-
W
o
U
w
"a:«
0
1.0
./'
~
Cf)
c
!oJ
N
~
::IE
0.8 Ie·SOA
I c '20A
0.6 Ie" lOA
~
~TJ-25.C
S
z
I e-50A
-w
::;:
;::
w
'"«a:
Is
t-
V
./
L---"
......-
"'~
fo" I .....
~
~
....A
te
}.
I.....-
V
10
so
0
1.2
N
0.6
::;:
0::
d ~
~
l:c' IOA l:c' 2OA
l:c' SOA-
T;r" 2S"C
1.0
0.8 [IC"50
::;
..:
0.4
~
1.4
f-
'"w0
CLAMPED INDUCTIVE LOAO
L - 100,.h
VeE(CLAMPI - 2S0V
a:
0
1.6
:Ic/I BI " 20
VBE=-5V
~
I-
FIGURE 16. CLAMPING INDUCTIVE TURN-OFF TIME
(D66EV ONLV)
Ic-IOA
1.2
'-
Ie. COLLECTOR CURRENT (AMPERES)
~ I e -20A
~
p--
I'""'-
0, I
50
1.6
1.4
~
1--" ....
~
FIGURE 15. CLAMPING INDUCTIVE TURN-OFF TIME
ID66DV ONL V)
j:
-~rrIT
~
~
a:
a:
Ie. COLLECTOR CURRENT (AMPERES)
w
::IE
:---r:'lon
r---:RIE' In
~
:::>
<.>
10
--.- .-
r-
1.0
..J
..J
~
-- '-
!::
!5
.......
100
-
w
V
O. I
TJ= 25·C
- - - - - TJ=IOO·C
TJ=ISO·C
VCE(CLAMPED) =2S0V
L=IOO,.h
I BI -Ic/ 2O
I82' leI 10
VBE = -SV
:
fsJt
...... . /
j..oo
a:
~
/"
-~
FIGURE 14. NORMALIZED RESISTIVE SWITCHING
STORAGE TIME (R BE VARIATIONS) VS
COLLECTOR CURRENT (D66EV ONL V)
u
/"
"100011
"'R'IOO~
Ie' COLLECTOR CURRENT
r--
.....
~
RaE "loon
10
_10.0
~
FllOi
-,.....--
I'
~RBE'1OO0
-..:::: ~ b~IE",o.nl
o
100
10.0
"
~
. . .y
::::1. . .
NOTE:
NORMALIZED TO Is
0
FIGURE 13. NORMALIZED RESISTIVE SWITCHING
STORAGE TIME (R BE VARIATIONS) VS
COLLECTOR CURRENT ID66DV ONL V)
TJ-2S·C
--Tr IOO • C
_._.- TJ- 150·C I
VCE (CLAMPED) - 250V
L - 100l'-h
181- Ie / 2O
182 - leI 10
VBE --5V
~
'"
::..
/-
~
Ie. COLLECTOR CURRENT (AMPER ES)
u
/
L'/
4
RBE-In-
'--'1-I---"
~ ~ ""-
N
-
,-
~
a:
...c'"
-RBE-Ion
-::::. -:::::.RBE-Iooon
RBE-loon
RBE-Ion
RBE-In
1
T;r'25.CJ
6 - - - I a , " Ic/20
- - - - I al 'Ie/5O
Vee' 250V
I
5 'p • 50,. ••e
VBE'O V
=.
4
Ul
...c
1
TJ"25·C I
- - - Ial "Ic /20
- - - - - IBI - Ic /50
Vcc " 250V
5 'p = 50,. •• e
VBE = OV
~
~c'2?i~
lIe" lOA
Ic / 1:a," 20
VI£"-5V
CLAMPED INDUcnVE LOAD
L" 100,. h
VCEICLANPI " 2S0V
0.4
0
z
0.2
0
0.5
1.0
1.5
2.0
J
0.2
0
0.5
1.0
2.0
RATIO. IBI/I82
FIGURE 18. STORAGE TIME VARIATION WITH IB2
(D66EV ONL V)
FIGURE 17. STORAGE TIME VARIATION WITH IB2
ID66DV ONL V)
541
TYPICAL CHARACTERISTICS
1.4.---....-----r-----~----,....---_.,
1.4
~
1&.1
1.2
:::E
i=
~
...J
...J
~
V
1.0 Ic=50A
Q
1&.1
N
c
Ic"IOA
:::E
z
1.21---+-----+------,r'So-&o.£...---r------I
w
:;
;::
Ic= 20A
I c '50A
..J
..J
~
w
T.r"25°C
Ic /1 81=20
V8E=-SV
CLAMPED INDUCTIVE LOAD
L'I00l'h
VCE ICLAIilPED) = 250V
l C=20
:J
II:
0
~
IC=IOA_
0.8
N
::;
<
:;
II:
oZ
I
O.S
I.S
1.0
0.5
1.01---+-------,rF-----+-----r------I
T.ra2S0C
Ic1181=20
V8E"-SV
CLAMPED INDUCTIVE LOAD
~~---+-----+- Lal00l'h
VCE ICLAIIIP)" 2S0V
Ic=IOA
0.6L---'-----....L..-----'::------:~---........
O.S
2.0
FIGURE 19. FALL TIME VARIATION WITH IB2
(D66DV ONL V)
1.0
loS
2.0
FIGURE 20. FALL TIME VARIATION WITH 182
(D66EV ONLV)
1.4
1.4.---....----~----,....----~----,
Ic a 50A
lc= 20A
~
1&.1
:::E
i=
~
~
1.2
II:
1&.1
~
II)
II)
0
II:
~
1.0 IC'SOA
~
IC=20~7
U
C
1&.1
N
:J
II:
W
>
~~
c
:I 0.8
0:
0
z
T.r=2S"C
IclIal " 20
VaE =-5V
~ 0 . 8 1 - - - ¥ - h - - - + - - - - - + _ CLAMPED INDUCTIVE LOAD
o
L =I00l'h
z
VCEICLAMPED)"2S0V
Ic,20
0.6L---:'::---_-':-_ _ _ _"':-_ _ _ _. i -_ _ _- - '
O.S
1.0
I.S
2.0
0.6
0.5
1.0
2.0
1.5
FIGURE 21. CROSSOVER TIME VARIATION WITH IB2
(D66DV ONL V)
FIGURE 22. CROSSOVER TIME VARIATION WITH
(D66EV ONL V)
7sll--~ N~~~PETITlV~}~~P~20I'S.e.
I~~
12S~~l~-~
Lll~~
LJill~
1~~I-~~~L~JEllftlL~
.iJia~II~"~"
t!
__
1.01---+-----::;;rfF-----t--~--1-----I
~
~
~
T.r= 2S"C
IclIal=20
VBE=-SV
CLAMPEO INDUCTIVE LOAD_
L'I00l'h
VCEICLAIIIP) =rov
Ic=IOA
1.21---+----+----"7"''17'''"-::."...''--1-----1
;::
IC=IOA
1C=20A
IC=SOA
\
_
70
80
~~
60
~ 10.0~~lliill~-~\~M1s.~el·
iil~~~~liIIO.O
~~
~
~
~
~
~:I
W~
100~··
s_.t-e.-'\\-ft't'~~~t~~
'--_+--+--t-pt,dti..p.
......-+_....-f"I+.U.H,,
r
10MSee ,r___
~'"
DC
C
00
r- I M~te.
',I
S
o
0:
~
!!lo:
U
_
T.r"25"C
DUTY CYCLE S 1"10
\
"
1\
I§
I\.
G
~ l.°r~~~~~~~~~~~~~ttlg~~~I;III.O is~
j
&
t!t
Ic OR ICIII LIMIT
--------THERMAL LIMIT
SECOND BREAKDOWN LIMIT
II!II
I
PART 5
PlART 6
~ART 7
"""t
u
HU
I
0\L.0-...-.J.-L....J-L..J....L.L1J.10--L-....L...L.JL.L.L.J...J1.L0-0.....30.-A...-.J.-1..JLL.JL.U.10.J.J0%1
VCE • COLLECTOR - EMITTER VOLTAGE (VOLTS)
182
--,
,
,,
\ ,
\ ,
\\
I
I
50
I
T.r =2S"C
30 - L alOOl'h
V."-SV, Rs . 0 . 5 n - 20 -:III a 1:ellO
VBE a OV'IRIE 047Q7--10
I
\
~;{RT S.
PARTS
~ART7
300
400
100
200
500
VCE ' COLLECTOR EMITTER VOLTAGE, CLAMPED (VOLTS)
FIGURE 24. REVERSE BIAS SAFE OPERATING AREA
(CLAMPED)
FIGURE 23. FORWARD BIAS SAFE OPERATING AREA
542
TYPICAL CHARACTERISTICS
I
100
i
~ ~l)NJ
90
.
~ ~~J
lrOO~
"-
c.>
LJ
c.>
~
...o
i!
SIN GLE PULSE
~
CL
oJ
Ii!
;
e
40
Itlj
/:/
.' V
30
/;1
/j
II>
z~
t!
z
t!
20
7
/1
;;/1
II)
is
II
H
10 0
- - TJ c 2SOC
--I
----·TJ-IOOOC
2
T;r'lsooc
3
V Tl1 , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIGURE 27, DIODE FORWARD CHARACTERISTICS
~nOYDe
'5n AL
L"IDO,.1I
(HON INDUCTI"t!
(1% OUf"rCYCl£ I
.·UL[eT
AI rO'U"I"
A2
rO"~lal"
2''''loIpsiPKI
.... PS. J II2
tPKl
-IiYDC
FIGURE 28. SWITCHING TIME TEST CIRCUIT
543
4
'" '"
120
FIGURE 26. POWER DERATING
'iii
II!
100
TC ,CASE TEMPERATURE ('C)
FIGURE 25. TRANSIENT THERMAL RESPONSE
~
~
140
160
544
HIGH VOLTAGE
D66DW1,2,3
D66EW1,2,3
NPN POWER DARLINGTON
TRANSISTORS
The D66DW/EW is a high voltage NPN high current power
Darlington especially designed for applications requiring
high blocking voltage capability such as: 460VAC line motor
controls, power supplies and UPS systems as well as
European 380 VAC line operated systems. This device
utilizes GE's latest advances in bipolar technology and
features the 066 package offering: collector isolation from
heat sink, TO-3 mounting compatibility and quick-connect
terminals.
The D66DW/EW also features a discrete fast recovery antiparallel high power diode which eliminates the need for an
external flyback diode in most inverter applications.
Features:
• Very high blocking voltage - VCEV 800 to 900 Volts
• High current - IC(Peak) 75 Amps
• Discrete high power flyback diode
• UL recognized industrial package
• Two versions - with or without speedup diode
~:lr~
!1lu:~:l!e~,.tj
~
1
~....
@
D66EW
D66DW
I
If.
'E'
w
TYP'""1
~
I
R
IF· I
AND (MILLIMETERS)
K2
l-
AA1II
AS
n
•t
MEmlC
I
S
INCHES
MIN
METRIC
Y
IA
MM
lAIN ..... MIN MAX
Y
IA
A
1.505 1.540 38.22 39.12
S.485
.510
120$7 12.15
T
.170
aB'
F
MM
I......... 1.....
.120
.132
3.04
G
.6Q5
.645
15.30 16.40
U.985 1.D15 25.01 25.80
H
J
.!MO
.307
.880 23.87 24.'9
7m
-
V.45O REf. 11.43 REF.
W .160
_
4.57
.120
,'71
.164
,132
3.04
4.34
3.35
.150
3.35
)(,.05O.D58
1.27
tA7
~.085.Q73
US
1.85
3..
".SO
L
.184
.In
4.57
M
.484
.484
11.78 12,30
N
.247
.255
6.27
8.48
M
P
.210
.230
5.33
5.84
AD.684
Q
.275 REF. 7.00 REF.
.970 REF. .... REF.
R
4.32
4.64
4.88
AC
! II
A----ooI
INCHES
::::t
-1'.....
l
I;"
\.
S
CASE STYLE 066
DIMENSIONS ARE IN INCHES
ORIENTATION OF THE
FLAT IS NOT];JCONTROLLJEO
'..L
1 1 .-=i==ft nHh T
j.
l
a
x:
~1t
K,
The collector-emitter diode is
a discrete high power diode.
VeER = 600-700 VOLTS
VeEV =800-900 VOLTS
50 AMP, 167 WATTS
Y
.157
Z
1.180 1.182 2a.g7 30.30
N;
AD
.130
.031
.100
.177
.155
3.30
UO
.11M 17.37 17.90
.Q35
REF.
.78
.eo
... REF.
L __-======--=====~_.-J
DEVICE CIRCUIT
maximum ratings (T C =25 0 C)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
(unless otherwise noted)
D66DW1/EW1
800
600
8
5
50
75
125
10
20
167
1.33
D66DW2IEW2
850
650
8
5
50
75
125
10
20
167
1.33
D66DW3/EW3
900
700
8
5
50
75
125
10
20
167
1.33
UNITS
Volts
Volts
Volts
TJ, TSTG
-40 to +150
2500
-40 to +150
2500
°C
VISOL
-40 to +150
2500
.75
4
.75
4
.75
SYMBOL
VCEV
VCER
VESO
D66DW
D66EW
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @ TC = 25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
Isolation Voltage
Ic
ICM
ICSM
Is
ISM
Po
thermal characteristics
Thermal Resistance, (transistor)
(diode)
See page 845 for mounting and handling considerations.
545
4
A
A
Watts
W/oC
V(rms)
electrical characteristics (T c
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I·
SYMBOL 1
MIN
TYP
MAX
UNIT
VCER(sus)
600
650
700
-
Volts
ICEV
-
-
1.0
2.5
mA
-
-
350
rnA
off characteristics
Collector-Emitter Sustaining Voltage
(Ic =5A, Vcl amp =VCE (Rated), RSE
Collector Cutoff Current
(VCE =Rated VCEV, VSE(off)
Emitter Cutoff Current
(VES =4.5V, IC =0)
(VES =1.5V, IC =0)
D66DW1/EW1
D66DW2/EW2
D66DW3/EW3
=10.0)
TJ
TJ
=1.5V)
= 25°C
=150°C
IESO
D66DW
D66EW
-
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE3
on characteristics
DC Current Gain
(Ic =50A, VCE =5V)
(Ic =75A, VCE =10V)
hFE
Collector-Emitter Saturation Voltage
(Ic =50A, Is =4A)
(Ic =20A, Is =2A)
VCE(sat)
Base-Emitter Saturation Voltage
(Ic =50A, Is =4A)
(Ic =20A, Is =2A)
VSE(sat)
25
15
-
-
-
-
-
-
-
2.5
2.0
V
-
-
3.5
3.0
V
TYP.
MAX.
switching characteristics
OW EW OW EW
Resistive Load
=500V
Delay Time
VCE
Rise Time
=50A
=4A, IS2 =6A
tp =50 J.f,sec
IC
Storage Time
IS1
Fall Time
Reverse Recovery Time
(IF =50A, di/dt =25A/J.f,sec, RS1E
-
tr
tf
-
VF
VF
-
-
2.0
2.5
Volts
Volts
Trr
-
2.0
-
J.f,sec
ts
emitter-collector diode characteristics
Forward Voltage
(IF =25A)
(IF =50A)
=.25.0)
-
td
0.75
0.5
.3
1.0
1
5
10
15
1
2
4
.5
J.f,S
TYPICAL CHARACTERISTICS
70
1000
800
600
60
400
in·
w
ffi
z
;(
...
C>
200
Z
~
w
u
...
.r:
w
v-
V
/'
40
/
20
2
4
6
8 10
20
50
40
w
u
'\.
VeE= 5V
10
1
"""
":;:
~
~
40
o
t;
\
~
60
~
D66DW/EWI
I
20
\\\
-"
8
10
a
80 100
COLLECTOR CURRENT (AMPERES)
FIGURE 1. TYPICAL CURRENT GAIN
30
l- -Isl '182 +1.81
,I
I
I
DEVICE UNDER TEST
I
I
U'
,I
I
I
L-------b-:--J
100
* 'SELECT'
RI FOR +I BI
R2 FOR-I BI
-6VDC
FIG.4 SWITCHING TIME TEST CIRCUIT
547
V
CLAMP
548
HIGH SPEED
D66GV5,6,7
NPN POWER DARLINGTON
TRANSISTORS
The D66GV is a high voltage NPN high current power
darlington especially designed for use in PWM applications
where fast and efficient switching is required. This device
utilizes GE's latest advances in bipolar technology and
features the D66 Package offering: collector isolation from
heat sink, TO-3 mounting compatibility and quick-connect
terminals.
.
The D66GV also features a discrete fast recovery anti parallel
high power diode which eliminates the need for an external
flyback diode in motor control and other inverter applications
such as power supplies and UPS systems.
Features:
•
•
•
•
•
•
Fast switching - tf{TVP) 0.5 f.LS
High blocking voltage - VCEV 500 to 700 Volts
High current - IC(Peak) 75 Amps
High gain - hFE{MIN) 50 @ 50 Amps
Discrete high power fast recovery diode
UL recognized isolated base package
maximum ratings (T C
= 25
0
C)
1 t.... J
@
I
IT.
It:.
I
~
~p~:
R
l
CASE STYLE 066
DIMENSIONS ARE IN INCHES
AND (MILLIMETERS)
ORIENTATION OF THE
FLAT IS NOT CONTROLLED
a
1 t-~I;tt~ M1r:l~ I
J
l~ ,I
S
"NOTE: The
collectoremitter diode
is a discrete
fast-recovery
high power
diode.
8
tu:lT
~
1lu' .\!0~®.tl ~
I:~
!
A------/
I.
c
DEVICE
--eIRCUIT
400-500 VOLTS
50 AMP, 125 WATTS
INCHES
METRIC
~
MIN
A
1.505 1.540 38.22 38.12
F
.120
.132
3.04
G
.605
.645
15.36 16.40
MAX
MINMMMAX
3.35
.9EIO 23.87 24.19
I
S
INCHES
~
MIN
I MAX
MINM1MMAX
S.495
.510
12.57 12.95
.110
3.81
T
.150
METRIC
4.32
U.985
1.015 25.01 25.80
V.45O
REF. 11.43 REF.
H
.940
J
.307
-
7.80
-
W
.180
K
.120
.132
31M
3.35
X
.050
.058
1.27
1.47
K
.171
.1&4
4.34
4.&4
I~
.Q65
.073
US
1.85
L
.184
Y
.157
.177
3.98
Z
1.180 1.192 29.97 30.30
,192
4.57
tot
.0464
,484
11.78 12.30
N
.247
.255
8.21
4.88
6.48
II
AA
.130
4.51
.165
3.30
4.50
4.30
P
.210
.230
5.33
5.84
AS.684.704
Q
.275
REF.
7.00
REF.
AC
.031
.ms
.78
.90
R
.970
REF. 24.64 REF.
AD
.100
REF.
2.54
REF.
17.37 17.90
(unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @Tc =25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
Isolation Voltage
D66GV5
500
400
7
50
75
125
D66GV6
600
450
7
D66GV7
700
50
75
125
A
10
20
125
1.0
50
75
125
10
20
125
1.0
10
20
125
1.0
A
TJ. TSTG
-40 to +150
-40 to +150
VISOL
2500
2500
-40 to +150
2500
1.0
2.5
1.0
2.5
1.0
2.5
SYMBOL
VCEV
VCER
VESO
IC
ICM
ICSM
IS
ISM
Po
500
7
thermal characteristics
Thermal ReSistance, (transistor)
(diode)
(1) Pulse Test: Pulse Width = 300 ms. Duty Cycle:5 2%.
See page 845 for mounting and handling considerations.
549
UNITS
Volts
Volts
Volts
Watts
W/oC
°C
V(rms)
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
I
TYP
MAX
UNIT
-
Volts
off characteristics
Col/ector-Emitter Sustaining Voltage
(IC 1A, RSE 100)
=
=
Col/ector Cutoff Current
(VCE Rated VCEV, VSE{off) = 1.5V)
Emitter Cutoff Current
(VES = 5V, Ic = 0)
=
D66GV5
D66GV6
D66GV7
=
TJ
25°C
TJ = 150°C
VCEO(sus)
ICEV
IESO.
400
450
550
~
-
~
-
-
1.0
2.5
mA
10
mA
second breakdown
I
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 24
on characteristics
DC Current Gain
(IC = 75A, VCE = 5V)
(Ic = 50A, VCE = 5V)
(Ic = 20A, VCE = 5V)
Col/ector-Emitter Saturation Voltage
(IC = 75A, Is = 5A)
(Ic = 50A, Is = 4A)
(Ic = 20A, Is = 2A)
Base-Emitter Saturation Voltage
(IC = 75A, Is = 5A)
(IC = 50A, Is = 4A)
(IC = 20A, Is = 2A)
hFE
VCE(sat)
VSE(sat)
25
50
100
150
300
350
-
-
-
-
1.6
1.3
1.0
3.0
2.0
1.5
V
-
2.2
2.0
V
-
3.5
3.0
2.5
V
p.s
switching characteristics
Resistive Load
Delay Time
VCE = 250V
td
-
0.1
O.S
Rise Time
le= SOA
tr
-
6.S
1.0
Storage Time
IS1 = 2.5A, IS2 = 5A
ts
-
2.5
3.0
Fall Time
PW = 50 p'sec
tf
-
0.6
0.75
Vp
Vp
-
1.3
1.3
2.0
2.S
Volts
Volts
Trr
-
O.S
1.0
p'sec
emitter-collector diode characteristics
Forward Voltage
@TJ = 2SoC
@TJ = 1S0°C
(IF = 25A
Reverse Recovery Time
(IF = 50A, di/dt = 100Alp.sec, VSE(off) = 1.5V)
550
TVPICAl CHARACTERISTICS
1000
800
1000
BOO
600
400
TJ= 125°C
~2S0C
2
«
..,
600
TJ= lSOoC
200
~
400
~ t--...
2
W
tJ
tJ
C
I
«
100
'TJ = 2S"C
U
c
l\
40
I
w
"'
\\~}'\25°C
10
10
40
20
Ac
J:
60
,'TJ-125°C
'-+/= \SO°C
40
20
80 100
10
10
400
200
w
W
6
"::;
5
"'_
Will
I=s
-0
B,= 20
::;>
w-
~'"
!;;:::J
!a~
"-
400
200
~
ir1
60
II:
II:
50
c
II
=
5V),
II
70
I2
OJ
U
It
rl
40
II:
«
B, = 10
~
io!or-~'
r-
s:
II:
a
30
u.
I/)
OJ
aw
TJ = lSO'C
0.4
2
«
20
TJ=15~
I-
~1Il
>
80 100
100
90
80
W
~
.....
60
FIGURE 2. DC CURRENT GAIN (VeE
TYPICAL
II:
IW
40
20
IC - COLLECTOR CURRENT (AMPERES)
iii
TJ = 25°C
r'-,rrc
Vcc = 5V
°
10
8
1
- ' 2 0.8
00
t J - 0.6
I!;(
~~
60
FIGURE 1. DC CURRENT GAIN (VCE = 2V),
TYPICAL
t;~
~g
~ l'-
100
80
IC - COLLECTOR CURRENT (AMPERES)
~~
"-
VCE = 2V
nrc
\ I I_I
20
"" .:.-L.. ......
~5oJ
w
'"'"::J
tJ
\'
60
200
I2
,\
80
w
i
(!l
~ \ l\.
I-
'"::J'"
2
TJ = 150°C
2
«
>-- T J = 25°C
l-
0.2
I/)
~
-TJ = 125°C
I
I
~
0.1
10
40
20
80
60
100
FIGURE 3. VCE(SAT) vs. IC' TYPICAL
i_LilLLIII
II!III
FIGURE 4. DIODE FORWARD CHARACTERISTICS
I II I
I _I III III
'7255~~jN~0~N~-~R~E~PE~T!(T~I~VE~~IC~S~"~'
'~P~~~2~0~!"~s~e~c~~i~\~~~~'7050
I-- --~
~-.:..:~-
1..-'"
r--+-+""". . .H-J>H:I---t''":,:+--H.L-.11-.1H1f\+.';':';:
~
2
DC
c(
~
Sec.\' Soc
100~ ..
f--- ,..
\ 10MS.c
00"
20H
-1I"W-H-i-t-H
r-
U
T:' 25"C
DUTY CYCLE S 1%
\
~
~
1.0
-
Ie OR Ic .. LIMIT
-------- THERMAL LIMIT
SECOND BREAKDOWN LIMIT
50
II:
lIE
r-IM~'C
I-
_\
T;r·2!1°C
LoIOO!"h
VBEIOFFI =-5V, Rs=0.5,n
\
\\
:ta, • LeliO
Ci
II:
II:
II
30
::>
tJ
""-
II:
0
I-
'"
~o-' f~~~~~~~~~~t~lm~~~~lliILO
IIII
I "''t I
o
~
III
1111
I!!
oJ
0
~
III
III
i!oJ
10
>
9
0
II:
III
8
!::
7
I-
:E
III
a::0
t;
III
oJ
oJ
0
..
CJ
u
;;;10.0
I II
Ic=25A...,
'" I I
I III
l V--1c· 5~AI
III
:tc' IOOA
l"c' IOA
ClI
"
o
I-
'PI'IOO
..J
T;r' 25"C
- Bf' :tc IIIIII
>
z
/
/
0
i=
"::I
II:
II
"'"a:
--:::
1.0
-
....,=25-
UJ
6
l-
5
2:
t::
.
III
4
3
a:
0
I0
~T;r·25·C
2
r....
>
0.1
.01
"
III
..J
..J
I'
&
1.0
10.0
0c O. I10
100
!!
...u
I8' BASE CURRENT (AMPERES)
Ie. COLLECTOR CURRENT (AMPERES)
>
FIGURE 3: COLLECTOR SATURATION REGION
iii
~
o
210.0
III
T;r·150·C
~
,9f'Ie/I81
~
o
>
,9= 100
J
o
~
II:
~
...... ~~
II)
a:
1.0
T,," 25'C
III
III
,,9'1 50
I
z
III
~
..
~ \,
tlf'5~
""----tlf " 100
::I
!c
1.0
II)
15
~
l-
I-
.
i
i
III
III
:.!
III
o
I,)
~
~~f'25
ti
a:
~
...
~;f'IO
z
o
!::
!!!
tlf" IelIBI
g
,9=25
I-
~
~f=50
~:Bf'IO
1--"' .....
I-
1\
/
~
.. o. I
O. I
10
100
200
}
Ic. COLLECTOR CURRENT (AMPERES)
10
100
200
:Ic. COLLECTOR CURRENT(AMPERESI
FIGURE 5: VCE(SATI VS Ie. TJ=150o~
FIGURE 6: VBE(SATI VS Ie, T J=25°C
555
200
TYPICAL CHARACTERISTICS
010.0
10000
!:;
. 'or~-
~
1&1
~
!:;
/loiO -
.......::~"25 _
g
!
1'--0..
..
... ~ ~~g:~
Tor"ISo-C
/loIclIl'
....:
.........
i'"......... r--
A
-......
ij
a: 1.0
5
a:
I!!
t:
:I
1&1
I
!
Ii... o.I
~
~
100
~
IC' COLLECTOR CURRENT (AMPERES)
~
200
I
100
10
Vea. COLLECTOR-BASE VOLTAGE (VOLTS)
FIGURE 8: CAPACITANCE (CCBO)
.•
10.0
U 1.0
TJ"25"C
------ TJ= 10o-C
- - - Tor= ISOoC
1&1
:I
i=
I
Z
VCC 02!1OV
~
u
I8," IC/ 2O
!:
Ie,o ICIIO
~ 0.1 VaEloFF'o -5V
Itp 050,. ..c
~
I.....
10'
ell
./'
~,.....
~~
-~
~
V
r
--
'iIn
~
::Ii!
..... ~ i-'"
i=
"
!:
%
U
~t d t: 1.0
II:
L
.,.... ,
a:
a:
:;)
~
e
.....
uI
a:
~
1&1
..I
..I
1
8 0 .1 1.0
100
10
Ic,COLLECTOR CURRENT (AMPERES)
1
.!'
6
5
02st
- - X a,o IC/ 2O
- - - - X8," IC/!IO
4
VCC" 2S0V
tp" so,. sec
V.IOF" 0 - 5 V
i=
II:
0
IIn
":i:z
I:!
~
l-#
IV ,....
1;.1-'"
2
NOTE:
NORMALIZED TO ts
i- (iii 25·C(REF. FIG. 10)
:::;
C
:I<
II:
0
Z
~~
o
I
,....
1;-'
1/
~ i-'
I I J ~I"
~
i-'
1--
.....
::::r:::: ~tl
-
L
./
V
100
10
Idn
.,.;:1-
::IE
i=
.- -
!il
1-11-1-
~
iIn
rr
fe {
I-
Z
1&1
a:
0.1
~
:;)
U
I
III:
100
~8
Ie,COLC.ECTOR CURRENT (AMPERES)
0 •0 I1.0
......
/'
ff. {
II:
In
10
~ I""
1.0
:i:
~~
//
--
f~J
1&1
1'!2~ ::.. I~~
-Ion
:---1.
~
,......,.
10
.....
FIGURE 10: TURN-OFF TIME (RESISTIVE LOAD)
I
.0;;;::::
~t"
3
iIn
0
1&1
N
~
,
C
V- I/ V
Ic,COLLECTOR CURRENT (AMPERES)
FIGURE 9: TURN-ON TIME (RESISTIVE LOAD)
III
"
f'{t".
t
8 0.01
-1I
1&1
:;)
"
t~ 1-1-
IZ
a:
:I<
r-r-
-
~
Z
1&1
1&1
~
TJ·ISO·C
Vee=2S0V
Ia,"Ie/2O
-III"leIlO
VaEloFF, = -5V
fp=50!, sec
III
-r--
~:~:~
10
TJ o 2SoC - TJ"IOO·C----T;roISo-C--VeElcL ••PI250V
LolOO!,h
IiI,oIe/2O
-11,olcIlO
VIE/OFF," - IV
100
1 COLLECTOR CURRENT (AMPERES)
FIGURE 11: NORMALIZED RESISTIVE SWITCHING
FIGURE 12: CLAMPED INDUCTIVE TURN-OFF TIME
STORAGE TIME (R SE VARIATIONS) VS
COLLECTOR CURRENT
556
TYPICAL CHARACTERISTICS
-.
1.6
~
1.4
'"
~
1.6
-
a: 1.2
1''")
1.0 f---Ic"OOA
Ic'SOA
0
a:
f - - - I c'20A ~
0 0.8
Ie"OA
0
Ul
Ul
!
Ic'IOA
--::::
.&
1.4
Ilol
:::!;
...
I-
I c"20,.
IC'5O
Ic=IOOA
1.2
(!)
f
c
a:
1.0
0
IUl
~~~~~:~~ - S V " -
'"
N
::; 0.6
~~CLE ~t%
\
10
f;- -- Ic OR ICII LIMIT
~
o
a:
g
O.S
0.1
_0 70
-'
o
0_
u
H
I.S
2.0
"-
1.0
130
"0
~
L
-
'"
II:
~
80
70
60
~
50 -
-'
-'
40
8
30
j
20
~ 6=12 1
~D·.I
(5
90
~
.1
U
Z
-
!z
I- 0'.5
ui
::!: 100
-;-
250 1---"-NCi'N':'iiEPETITIVE
:::!;
T;r' 2S"C
Xc/XB1 ' 20
I
0.2
-
Ic" OA
~-
'"a:
~
I- 0'.05
W
0..
II
~ .01
-
1-25"CS T;rSIOOoC
L"OOJAoh
I-VBEIOFF)' 5 V,Rs'·S.Il
I-X BI ' Xc /lO
D67DE5
10
D67DE6
100
200
;J.
/'
~D •. OI
::;:
II:
W
:I:
\
l-
SINGLE PULSE
I-
ill
\
_\
Z
u
u
100
c
,;,
80
0,::
~
r-
~
=--~
~
600
400
~
-~ ~I"
z
«
...I!lz
~~5OC
w
a:
a:
::>
u
u
~"
\.\. \
60
c
w
:r.~
~
100
~
~C
~
-
.-~
-- ~
~
~
~ ~5'C
T =125"C
)J
)
I
T~=1~"t
80
~
V
\
60
:r.
40
T J =125'C\
T J =150'C
Vee=2V
40
Vee=5V
20
20
10
10
200
T J =1SO"C
40
60
80
100
200
Ie. COLLECTOR CURRENT (AMPERES)
10
10
20
40
60
SO
100
200
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 1. DC CURRENT GAIN (VCE = 2V), TYPICAL
FIGURE 2. DC CURRENT GAIN (VCE = SV), TYPICAL
560
TYPICAL CHARACTERISTICS
10.0
200
u;
w
a:
8.0
6.0
iii
a:
w
w
::;;
:!
::;;
I-
zw
a:
a:
::>
u
a:
a
u
w
0.6
a
0.4
u
•
1.0
P,f
:;;.-
. ..",.. ~....-
60
1//1
~I
«
~
40
II:
,f
~
V>
::>
aw
z
«
20
IZ
rY,so'c
-y
80
Cl
II:
8f=10
-
a:
::>
u
II:
~8f=20
Tjf'C
I-
w
8,=20
.-,::: 8,=10
2.0
0.8
-'
-'
100
IZ
Q.
:!
I1/
w
Q.
4.0
TJ=ISO'C
«l-
J
~
I
~
10
0.1
20
10
40
30
50
60 70 8090100
3
It
100 ~ __ ,
• ~ L...,J
,t. flV";
T __ •• :
tp~
,- -_ ...
in 130 1 - a: 120
a.. 110 f -
I" _••
""5M!.:,'·~;:+::,,;·.;;-~
"":I!
ct.
c
I-
z
w
a:
/I:
::J
u
a:
0
--
.....
..-
I-.
- ... - I - -
""
'"l
:IE
•..
~-
f--
100
90
.-t-- . - r-
-
-- f---- I - --
80
70
60 I - - f-2S-Cs. T;rSI OO"C
-
L'IOO,.h
I-
50 I - - f-Va[IOl'''I- 5V,Rs=·S{l
.J
f-III'":Z:c 110
40
.J
0
u. 30
u
H
20
U
w
\
'\
--
D67:P5~ ~
-
10
100
1000
D67FP6.~
........ '"'- ~D67FP7- -
400
200
FIGURE 6. REVERSE BIAS SAFE OPERATING
AREA (CLAMPED)
FIGURE 5. FORWARD BIAS SAFE OPERATING
AREA
+ 250VDC
+6VDC
=2.5GR L
L=IOO,..h.
(NON INDUCTIVE)
(1% DUTY CYCLE)
GE
AI39E
+5V
~50,. .•.
10;;:;------ ---,
I
I
I
.OZZ
.-~--~~~
I
I
I
I
I
I
II
6.S
100
* = SELECT ,
RI FOR +I BI = 5 AMPS
RZ FOR-I BI = 10AMPS
R3 FOR-I BZ = 10 AMPS
WITH SI CLOSED
500
vel' COLLECTOR EMITTER VOLTAfilE (VOL Tsl
veE, COLLECTOR - EMITTER VOLTAGE I VOLTS)
Z70
5
FIGURE 4. DIODE FORWARD CHARACTERISTICS
150
140
v" ."'
4
VF.INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIGURE 3. VCE(SAT) vs. Ic. TYPICAL
/I:
*1
o
200
VCE(SA n. COLLECTOR - EMITTER SATURATION VOLTAGE (VOLTS)
Ei 250 f--~-- ....n..
_ .•
...... T J=2S'C
,.". T J=12S"C
~
V>
0.2
-6VOC
NOTE' UTILIZING SECOND BASE CONNECTION DURING TURN-OFF (51 CLOSED). TYPICAL
REDUCTIONS IN TURN-OFF TIMES (t,.I,.'el RANGE FROM 2'1 TO 10'1.
REDUCTION IS PROPORTIONAL TO - Isz .
FIGURE 7. SWITCHING TIME TEST CIRCUIT
561
V
CLAMP
562
SURFACE-MOUNT
D70F2T1
NPN POWER TRANSISTORS
50 VOLTS
2 AMP, 500 mWATTS
Designed for power amplifier applications, power switching
appl ications.
Features:
• Low saturation voltage
: VCE(sat) = 0.5V (Max.) (IC = 1A)
NPN
COLLECTOR
EMITTER
CASE STYLE SOT-89
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High speed switching time: tstg = 1.0J,Ls (Typ.)
.181
(4.6 MAX.)
• PD=1 ~ 2W (Mounted on ceramic substrate)
• Small flat package
• Complementary to D71 F2T1
• See page 840 for mounting and handling considerations.
Wif
MARKING SYSTEM
TVPENAME
.016· .002 +.003
(0.4 -O.OS) ('O.OB)
M1 .
hFE
.OS9 ± .004 -oi+---+-~- .OS9 ± .004
(l.S±O.l)
(l.S±O.l)
DESIGNATION
hFE DESIGNATION
1) 711-240
2)70·140
3)120·240
maximum ratings(T A = 25° C)
(unless otherwise specified)
SYMBOL
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current -
VCEO
VC80
VE80
Continuous
IC
Base Current - Continuous
Total Power Dissipation @ Tc = 25 DC
Derate above 25 DC
@ Tc = 25DC(1)
Operating and Storage
Junction Temperature Range
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm 2 x O.Bt).
(2) See page 841 for thermal considerations.
563
D70F2T1
50
50
5
UNITS
Volts
Volts
Volts
2
A
A
mWatts
18
0.4
PD
500
1000
TJ. TSTG
-55 to +150
DC
electrical characteristics (TA
I
=25
0
C)
CHARACTERISTIC
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
V(BR)CEO
50
-
-
Volts
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =10mA, IE =0)
Collector Cutoff Current
(VCB =SOV, IE =0)
ICBO
-
-
0.1
p.A
Emitter Cutoff Current
(VEB =SV, IC =0)
lEBO
-
-
0.1
p.A
hFE
70
-
240
-
-
0.5
V
1.2
Volts
on characteristics
DC Current Gain(3)
(Ic =O.SA, VCE =2V)
(Ic =2.0A, VCE =2V)
20
Collector-Emitter Saturation Voltage
(Ic =1A, IB =O.OSA)
Base-Emitter Saturation Voltage
(Ic =1A, IB =O.OSA)
VCE(sat)
-
VSE(sat)
-
ton
0.1
tstg
-
1.0
-
tf
-
0.1
-
switching characteristics
Turn-on Time
Vcc =30V
Storage Time
IS1 =-IS2 =O.OSA
Fall Time
-
Duty Cycle;:2; 1%
p's
(3) See page 44. for hFE ranges.
COMMON EMITIER
Ta =100'C
1.2
w
~
OUTPUT
~
II:
~~I
I
0.8
r-- -
II:
"w~
IL'-'V'V\.-4~JV'u_
____ _
~
0(
E
~ ~
'l'>
..--1
162
I
r-- -
'"
"
J!l
0.4
:l
8
m
o
FIG. 1 SWITCHING TIME TEST CIRCUIT
~
o
r- '"
I--
J
1
V
~
~v
30
~
~
~
..... 40
50
0.8
1.2
COLLECTOR CURRENT Ie (A)
FIG.2 VCE -IC
564
J
J
I
VL II L
v:
0.4
!iI
:?
1.6
2.0
COMMON EMITTER
Ta = 25°C
1.2
~
~
0
:?
w
Cl
>
a:
~~UJ
~~
a:
UJ
I
'"
"
.!P
...J
...J
0.4
0
J
II
V
)
0
I/':
o
o
0.4
----
1.6
1.2
I--
I--
«
'--
I:
~
~
~
E
'\'
>
c::
w
I
"
.!!',
I-- l-
7
w
ci:
0.4
0
I0
1/
)
W
...J
...J
40
0.8
0.8
0
V L
~
II
Cl
i!..J
I--
/
«
E
1
V _
~J
0.8
0
!d
COMMON EMITTER
Ta =-55·C
1.2
UJ
.-
./
0
0
2.0
0.8
0.4
COLLECTOR CURRENT IC (Al
~
./
glJ-
&
50
1.6
1.2
2.0
COLLECTOR CURRENT IC (A)
FIG. 3 VCE - IC
FIG.4 VCE -Ic
1000
COMMON EMITTER
VCE= 2V
500
UJ
300
LL
Ta= 100·C
.t::
Z
;;:
~
........,
Cl
I-
Z
w
a:
a:
25
100
:J
0
0
Q
-55
50
20
100
30
10
1000
300
3000
COLLECTOR CURRENT IC (rnA)
FIG. 5
hFE - IC
10
COMMON EMITTER
leilB 20
COMMON EMITTER
ICIIB 20
=
=
UJ
Cl
5
0.5
~
...J
0
0.3
>
/
Z
0
I
~
a:_
~ ~.
:Jij
0.1
dofu
.~
a: -
!
0
0
I-
Ta = -55·C
1
..... .A
Y.L.JI'
~~.A"
UJ UJ
I::?
~
0.05
::::;...<' "
"'
0.03
UJ
...... 25
0.5
100
25
0.3
-55
...J
...J
0
0
0.1
0.01
10
30
100
300
1000
3000
10
30
100
300
COLLECTOR CURRENT IC (rnA)
COLLECTOR CURRENT IC (rnA)
FIG. 7
FIG. 6 VCE(sat) - IC
565
VSE(satl - IC
1000
3000
1.0
5000
'C MAX. (PULSE)'
COMMON EMITTER
VCE= 2V
3000
IC MAX. (CONTINUOUS)
0.8
g
"-
1000
g
ffi
0.6
::::I
0
a:
f:!
.....
0
~
a:
a:
l-
"
~
0.4
300
-55
8
g
....
Z
50
a:
30
0.6
f:!0
0.8
1.0
1.2
:l
1.6
1.4
0
0
10
*
3
0.1
1.2
~
iii
c
!
a:
~
...J
8
*
\-
"'
FIG. 8 Ie - VBE
i=
:.
w
BASE-EMITTER VOLTAGE VBE (V)
~
~
100
a:
a:
::::I
0
Jll J
0
10.2
,p
'"
I\. 1c
L
w
0.2
I
~
1111"\ 1~
'\ l
~01-'II~
~
~
I
III
-~ ~
~~~~
~;,
"'
500
-.... 25
I--.
m
*
1.0
100
SURFACE-MOUNT
D70G.05T1
NPN POWER TRANSISTORS
150 VOLTS
50 mAMP, 500 mWATTS
Designed for high voltage switching applications.
NPN
COLLECTOR
Features:
• High voltage: VCEO = 150V
~'(Q
= 120MHz
• High transition frequency: fT
CASE STYLE SOT-89
• PO=1 - 2W (Mounted on ceramic substrate)
EMITTER
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Small flat package
.181
14.6 MAX.)
• Complementary to 071 G.05T1
• See page 840 for mounting and handling considerations.
Wf
.018 - .002 '.003
(0.45 - 0.05) ('0.08)
MARKING SYSTEM
A1
U , I 'I
I
TYPENAME
.0'6 - .002 •. 0 0 3 '
(0.4 - 0.05) ('0.08)
hFE
DESIGNATION
.059 ± .004
('.5±0.')
I
I
I
-I~
l:l ~
.Q16 - .002 '.003
(0.4 -0.05) ('0.08)
_+----+_+!+-_ .059 ± .004
(1.5±0.')
hFE DESIGNATION
n
1) 70·240
2) 70-140
3) 120·240
maximum ratings (TA
I
I
=25°C) (unless otherwise specified)
SYMBOL
VCEO
VC80
VE80
D70G.05T1
150
200
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
50
mA
Base Current - Continuous
Total Power Dissipation @ Tc = 25°C(1)
@Tc=25°C
Operating and Storage
Junction Temperature Range
18
Po
10
800
500
mA
mWatts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm 2 x 0.8t).
(2) See page 841 for thermal considerations.
567
electrical characteristics (TA = 25° C)
I
CHARACTERISTIC
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
VCEO(sus)
150
-
-
Volts
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = 10mA, 18 =0)
Collector Cut-off Current
(VCB = 200V, IE =0)
ICBO
-
-
0.1
p.A
Emitter Cutoff Current
(VEB =5V, Ic = 0)
lEBO
-
-
0.1
p.A
hFE
70
-
240
-
VCE(sat)
-
-
0.5
V
VBE(on)
-
-
1
V
on characteristics
DC Current Gain(3)
(Ic = 10mA, VCE = 5V)
Collector-Emitter Saturation Voltage
(Ic = 10mA, IB = 1mA)
Base-Emitter Voltage
(VCE = 5V, IC = 30mA)
(3) See page 44 for hFE ranges.
50
VI
~~ ~~V- ~
-
I
40
S
.9
ffi
30
a:
a:
G
a:
12
20
&l
:l
8
I/ / /
I J '/
I
V/ V .....
./ /
'"
.......
COMMON EMITTER
Ta = 25°C
300
10
W
IL
<:
z
20D/JA
I
V
~
I
i!-
a:
a:
0
U
30
o
rt V
'\.
:::l
U
18 = 100",A
~
~
100
~
i-'"""
S
~."
'~'\.
\.
-
COMMON EMITTER
Ta = 25°C
~
o
500
300 AI
'/
./
Iii
10
~
~
,/
,II V V/
;(
-'
o
u
"
30
.<6> /
O.S
,cl''C
V
~./
0.3
J.,.."'"
I---
~
V
SI"""""
I"'"
!.-'
l.---"'"
0.1
0.05
10
O.S
30
10
3
O.S
100
FIG. 3
10
30
hFE - IC
FIG. 4 VCE(satl - IC
0
3
0
,
.s
.Y
~
~O
L
~:::l
~
20
t)l
1
I
I I I
8
0
0
30
((lr--
a:
/~
10
po-
U
100
COLLECTOR CURRENT IC (mA)
FIG.5
j!
0
:::J
0.05
3
I
a:
a:
/~~~
O.S
J
I
I §~ I
;r:
,~
I
COMMON EMITIER
VCE = SV
COMMON EMITIER
ICIIB = 10
--
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
o
.J
0.2
0.4
'IV
0.6
0.8
BASE-EMITIER VOLTAGE VBE (V)
VCE(sat) - IC
FIG. 6
569
IC - VeE
1.0
1.2
500
I
COMMON EMITTER
Ta 25°C
J:
U
zw
......::::::
z
50
./
0
i=
en
z
«c:
~
J
\
,
10
2
5
"
*
-
1
3
10
1200
-
-3
•
ICMAX. (CONTINUOUS)
\
-1
I1III
~
~
--'
30
10
-0.6
I
50
1\
~
0
w
c:
u.
=30V
100
::J
I
100
VCE
N
~
I
Ie MAX. (PULSE)
=
300
.,t>
200
I I
~
-...
r-....
200
0
"" " r"
r--.. J-......
-... !-.....
I" l"
1'""" ~
i
o
20
40
60
80
100
120
AMBIENT TEMPERATURE Ta (0G)
FIG. 9
570
Pc -Ta
140
160
SAFE OPERATING AREA
SURFACE-MOUNT
D70Y.8T1
NPN POWER TRANSISTORS
30 VOLTS
800 mAMP, 500 mWATTS
Designed for audio frequency amplifier applications.
NPN
COLLECTOR
Features:
• High DC current: hFE = 100 - 320
• Suitable for output stage of 1-Watt amplifier
EMITTER
CASE STYLE SOT-89
• PD=1 - 2W (Mounted on ceramic substrate)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.181
(4.6 MAX.)
• Small flat package
-Complementary to D71Y.8T1
- See page 840 for mounting and handling considerations.
@
.018 - .002
MARKING SYSTEM
~
TYPENAME
P1
'.003
(0.45 ~ 0.05) (+0.08)
'.003
(0.4 - 0.05) (·0.08)
hFE
.059 ± .004
(1.S±O.I)
DESIGNATION
I
I
,
q
to
e.
*" ",.0",,'
6-,;;,-.0~02,-:-,'~.00?i;-3
(0.4 -0.05) ('0.08)
-++II
--t---+--+-- .059
± .004
(1.5±O.1)
hFE DESIGNATION
n
1) 70-240
2) 70-140
3) 120-240
maximum ratings (TA = 25° C)
;;;I~
U
I II' I 'I
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
VCEO
VeBO
VEBO
D70Y.8T1
30
35
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ie
800
mA
Base Current - Continuous
Total Power Dissipation @ Te = 25°C
@ Te = 25°C(1)
Operating and Storage
Junction Temperature Range
IB
Po
160
500
1000
mA
mWatts
TJ, TSTG
-55 to +150
°C
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm 2 x O.Bt).
(2) See page B41 for thermal considerations.
571
electrical characteristics (TA = 25° C)
(unless otherwise specified)
I SYMBOL I
MIN
V(BR)CEO
Collector Cut-off Current
(VCB =35V. IE =0)
Emitter Cutoff Current
(VEB =5V. Ic =0)
CHARACTERISTIC
I
TYP
MAX
UNIT
30
-
-
Volts
ICBO
-
-
100
nA
lEBO
-
-
100
nA
hFE
100
-
320
-
0.5
V
-
0.8
V
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =10mA. IB =0)
on characteristics
DC Current Gain(3)
(Ic =100mA. VCE =1V)
(Ic =700mA. VCE =1V)
Collector-Emitter Saturation Voltage
(Ic =500mA. IB =20m A)
Base-Emitter Voltage
(VCE =1V. Ic =10mA)
35
VCE(sat)
-
VBE(on)
0.5
-
(3) See page 44 for hFE range.
1000
1000
COMMON EMITTER
Tc=25'C
8
1
.9
I-
z
W
II:
II:
800
/
400
4
w
Ii.
.c
3
~(!j
ffi
I
:l
200
Ta= 100'C
300
...
25
r-
-25
100
II:
II:
::>
2
u
y-
u
w
0
U
5
""
::>
f?
~ . / i"""
COMMON EMITTER
VCE= 1V
500
6
~ ~ .....
e~ ~
~V...... i.--'"
600
u
II:
7
50
U
Q
V
IB=1mA
30
I
10
0
0
o
3
2
4
5
6
7
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
10
30
100
COLLECTOR CURRENT IC (rnA)
FIG. 2 hFE - IC
IC· VCE
572
300
1000
,
BOO
z
o
0.5
0:_
0.3
~
V CE " 1V
<'
§.
-9
::J>
1-..:
0
~ !w
w
r:}'
~~
d:;!
::J
j
0.03
~:::l
:..l-
o
o
o
o
, " 25
-25
0.0 1
1
10
30
100
300
25
-25
?
"
~
200
) ))
0
1000
--
U
400
0:
"/
Ta" 100·C
i'-
I-
w
0:
0:
o
0.05
600
IZ
~~
o. 1
0-'
0>
1-0
COMMON EMITTER
COMMON EMITTER
leilB - 25
O.B
0.4
1.6
1.2
2.0
COLLECTOR CURRENT IC (rnA)
3000
IC MAX (PULSE)
<'
§.
-9
IZ
W
0:
0:
::J
.
,~
300
~~'2
U
~o 1111
~'"
100
0
1.2
*
'-
z
I-
,
i=
..:
Q.
l'..
u;
0.8
*
0
10
!20
"'
30
SINGLE NONREPETITIVE PULSE
Ta" 25·C
~
CD Ta"
SUBSTRATE (250mm 2 x 0.8t)
I"
0.6
w
"-
I"'- r-...
0.4
...
0
CURVES MUST BE OERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
.......
CD
-'
-'
U
25·C
~
0
0:
w
CD MOUNTED ON CERAMIC
0:-
~~
oQ.Q.U
Ie - VBE
-
!!l
50
0
-'
-'
0
-
1.0
0
-~
0:
0
I
CD
'%
'? ~
~00 ~~~'
500
FIG. 4
I I
I 1111
* .'\s
.. I
-0
IC MAX. (CONTINUOUS)
1000
BASE-EMITTER VOLTAGE VBE (V)
veE (sat) -Ie
FIG. 3
"'"
.........
0.2
o
o
20
40
60
60
1"r--.
"
"'~
r-....
100
120
AMBIENT TEMPERATURE Ta (·C)
3
0.1
0.3
3
10
30
100
FIG. 6
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 5
SAFE OPERATING AREA
573
Pe- Ta
i'-..
i""-- ~
140
160
574
SURFACE-MOUNT
D70Y1.5T1
NPN POWER TRANSISTORS
30 VOLTS
1.5 AMP, 500 mWATTS
Oesigned for audio frequency amplifier applications.
NPN
COLLECTOR
.Features:
--(Q
• Suitable for output stage of 3-Watt amplifier
• PO:::1 -- 2W (Mounted on ceramic substrate)
CASE STYLE SOT-89
• Small flat package
EMITTER
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.181
(4.6i;iAXT
• Complementary to 071Y1.5T1
• See page 840 for mounting and handling considerations.
81~.e.,
MARKING SYSTEM
~
G1
TYPENAME
.016·.002 +.003
(0.4 -0.051 (+0.08)
hFE
~---Oof--+_-+-_.059 ±.004
DESIGNATION
(1:5±o:iT
(1.5±0.1)
hFE DESIGNATION
1170-240
2170·140
31120-240
maximum ratings (TA
=25° C) (unless otherwise specified)
VCEO
VeBo
VEBO
D70Y1.5T
30
30
5
UNITS
Volts
Collector Current - Continuous
Ie
1.5
A
Base Current - Continuous
Total Power Dissipation @ T e
@Te
Operating and Storage
Junction Temperature Range
IB
Po
0.3
500
1000
A
mWatts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
=25° C
=25°C(1)
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm 2 x D.Bt).
(2) See page 841 for thermal considerations.
575
Volts
Volts
electrical characteristics (TA = 25 0 C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
V(BR)CEO
30
-
Collector Cut-off Current
(Vcs = 30V, IE = 0)
Icso
-
-
100
nA
Emitter Cutoff Current
(VES = 5V, Ic = 0)
IESO
-
-
100
nA
hFE
100
-
320
-
CHARACTERISTIC
MAX
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 10 rnA, Is = 0)
Volts
-
on characteristics
DC Current Gain(3)
(Ic = 500mA, VCE = 2V)
Collector-Emitter Saturation Voltage
(Ic = 1.5A, Is = 0.03A)
Base-Emitter Voltage
(VCE = 2V, Ic = 500mA)
VCE(sat)
-
-
2.0
V
VSE(on)
-
-
1.0
V
(3) See page 44 for hFE range.
1.6
10,
$
fI V
1.2
.9
f/
IZ
w
a:
a:
:>
()
0.8
a:
0
t;
W
..J
..J
0
~
1000
I--
-
6.
f-
t--
COMMON EMITTER
Ta" 25"C
500
Lo--
-
w
5
~
V
IL
s:::
Z
:;;:.
4
C)
-
I/'
100
V
I-t-
I-
Z
w
a:
a:
3
V
Ta"1oo"C
300
F=:
~25
-25
50
:>
()
()
2
30
COMMON EMITTER
VCE" 2V
Cl
0.4
()
IB"1 mA
,,'
10
,3
0
0
o·
4
8
30
100
COLLECTOR CURRENT IC (mA)
12
16
FIG. 2 hFE - Ie
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
10
Ie - VeE
576
300
1000
1.6
COMMON EMITTER
ICIIB= 50
z
°i=
0.5
~-
~2:.
VCE = 2V
0.3
I
< :en
!
w
W
II:
0.1
'1'<
0.05
°0
G>
w
IZ
W
II:
II:
0.8
:::>
U
U
,
0.03
f2
u
W
-25
..J
10
1
U
100
30
'"
'l'
J
J
1000
300
1(J
0.4
5
1 f fill!
0.01
§
{!"
II:
"\ 25
:l
°u
1.2
.Y
Ta = 100·C
~tll
1I:!:i
<"
§.
l/
-r
I:~
COMMON EMITTER
COLLECTOR CURRENT IC (rnA)
o
FIG.3 VeE (sat) -Ie
) ))
o
0.4
0.8
1.2
1.6
2.0
BASE-EMITTER VOLTAGE VBE (V)
FIG. 4 Ie - VeE
* IIII I I
'c-""""'''''''''' ~.II
~~ ~*
'0."
. '.
5000
ICMAX (PULSE)
3000
>
~'.w.-
1000
<"
§.
.Y
IzW
500
,,"
"' <>om
"-0,,,
...-?,. 1
300
II:
II:
~~
:::>
U
II:
°
IU
'" .w.-.'
100
'.
'"
1.2
'\
1.0
z
°~
-'
°
U
30
*
SINGLE NONREPETITIVE PULSE
Ta = 2S·C
"-
0.8
0
~!
50
'" ~
f--
Cl
w
~
0
Cl
~
>
II:
~~
0
>
-O.B
w
:i ~
~
'l'>
:i
W
r/:
II:
0
I-
u
w
0
-0.4
...J
...J
-0.8
II:
-0.4
I-
u
W
0
...J
...J
U
0
U
0
0
0
-O.B
-0.4
-1.6
-1.2
-2.0
-0.4
0
-0.8
-1.2
-1.6
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG. 3 VCE -IC
FIG. 4 VCE-IC
1000
COMMON EMITTER
VCE: 2V
500
Ta: l00·C
w
"-
300
J::
I"-
25
Z
;;:
~
Cl
I-
Z
-55
W
100
II:
II:
:J
U
u
"'
50
0
30
10
-10
-100
-30
-300
-1000
-3000
COLLECTOR CURRENT IC (rnA)
FIG.5 hFE -IC
-10
-1
COMMON EMITTER
Iclle =20
w
Cl
«
1--
-0.5
~
COMMON EMITTER
leile: 20
-5
0
>
z
-0.3
0
~
"'i=?~
=
« ill
(/)
II:
w iiJ
Ta: -55·C
dfU
-0.1
/1..9'1"
-0.05
0
I-
U
w
...J
...J
0
1
~~.~
~}'
:i
~
-3
/
~
-0.03
~
U
-0.01
-10
-
.-
.... ~
~p
r\
-100
S'
-0.5
V"~
-0.3
25
"' 25
100
-55
I I
-1000
-0. 1
-10
-3000
-30
-100
-300
COLLECTOR CURRENT IC (rnA)
COLLECTOR CURRENT IC (rnA)
FIG. 6 VCE(sat) - Ie
FIG. 7 VBE(sat) - IC
581
-1000
-2.0
-2.0
-5000
'*"l.
IC MAX. (PULSED)
COMMON EMITTER
VCr:=-2V
-3000
-1.6
$
I"-
-1000
ffi
~:l
8
-500
0
a:
a:
~
~"
:l
0
-0.8
~
l(li-
<-g
~
-100
a:
-so
bl
-30
~
J 1j
o
o
-0.4
~O", II~
a:
a:
:l
0
-0.4
111
II
-1.2
-0.8
-1.6
-2.0
-10
liE
FIG. 8 Ie - VeE
-5 I-
.
-1
-0.1
-0.3
•
-1
-3
1\
:::::l::
SINGLE NONREPETlTIvr: PULSE .
TA= 25°C
=~
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
-3
I
=~
i
~I-
~
~I-
"
-10
-30
COLLECTOR-EMITTER VOLTAGE VCE (V)
I
1-0
o MOUNTED ON CERAMIC
l - i--
FIG.9 SAFE OPERATING AREA
SUBSTRATE (25Omm 2 • 0.8t)
1.0
0Ta= 25°C
~
i'...
o. 8
.......
.......
0.6
~
" '"
8
-2.4
I~I~
"-
~
~
COLLECTOR-EMITTER VOLTAGE VBE (V)
1.2
..
~)\ TfRl
.9
, I.
l. l.
~'*.
II
" <>00
-300
'b
.
~~.~ ~
'"
.9
-1.2
IIII\.
IC MAX. (CONTINUOUS)
(i)
.......
0.4
"'-
'"
.......
0.2
20
40
60
~
....... 1-0...
80
.......
......
..... r--...
100
120
"r...;
~
140
160
AMBIENT TEMPERATURE Ta ("C)
FIG.10
PC· Ta
582
0
w
SURFACE-MOUNT
D71G.05T1
PNP POWER TRANSISTORS
-150 VOLTS
-50 mAMP, 500 mWATTS
Designed for high voltage switching applications.
PNP
COLLECTOR
F~atures:
• High voltage: VCEO = -150V
• High transition frequency: fT = 120MHz
EMITTER
CASE STYLE SOT-89
• PD=1 ~ 2W (Mounted on ceramic substrate)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.181
• Small flat package
14.6MAxT
• Complementary to D70G.05T1
• See page 840 for mounting and handling considerations.
Wf
al~..,
MARKING SYSTEM
B1
9.
TYPENAME
.Q16· .002 +.003
(0.4 ·0.05) (.0.08)
hFE
DESIGNATION
.059 ± .004 _ot+--+-o--Oo/+-_.059 ± .004
(1.5±0.1)
(1.5±0.1)
hFE DESIGNAnON
1) 70·240
2) 70·140
3) 120·240
maximum ratings (TA
=25° C) (unless otherwise specified)
SYMBOL
VeEO
Ve80
VE80
D71G.05T1
-150
-150
-5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ie
-50
mA
Base Current - Continuous
Total Power Dissipation @ Te = 25°C
@Te= 25°C(I)
18
Po
-10
500
800
mA
Watts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Operating and Storage
Junction Temperature Range
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm 2 x O.8t).
(2) See page 841 for thermal considerations.
583
electrical characteristics (TA
I
= 25° C)
CHARACTERISTIC
(unless otherwise specified)
I SYMBOL I
MIN
TYP
VCEO(sus)
150
-
-
Volts
MAX
UNIT
off characteristics
Collector-Emitter Sustaining Voltage
(Ic =-10mA, IB =0)
Collector Cut-off Current
(VCB =-150V, IE =0)
ICBO
-
-
-0.1
nA
Emitter Cutoff Current
(VEB =-5V, IC =0)
lEBO
-
-
-0.1
nA
hFE
70
-
240
-
VCE(sat)
-
-
-0.8
V
VSE(on)
-
-
-0.9
V
on characteristics
DC Current Gain(3)
(IC =-10mA, VCE =-5V)
Collector-Emitter Saturation Voltage
(Ic =-10mA, IB =-1mA)
Base-Emitter Voltage
(VCE =-5V, Ic =-30mA)
(3) See page 44 for hFE range.
-50
'~ZL
~~~
;Y~f-
-40
-10
I
/ / V
./
/ J
-~
V V/ V
-30
-20
500
/ 1/V
COMMON EMITTER
COMMON EMITTER
Ta = 25°C
Ta = 25°C
300
I
-3OOpA
u.
I
;;:
......
100
.....
(!)
I-
-2OOjlA
,,-
I
fJ. ~V
I
50
()
()
30
1\
~
-0.5
-1
-3
-10
COLLECTOR CURRENT IC (rnA)
-2
-4
-6
-8
-10
-12
FIG. 2
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
IC - VCE
584
-5
-2
10
0
,
\
0
-
IB= 100pA
~V
Z
w
a:
a:
::>
I
-
VCE = -10V
w
.r:
Z
hFE - Ie
-30
-100
-5
500
I
I
COMMON EMITTER
Ta =2S'C
I I I
il
COMMON EMITTER
VCE= -5V
300
II ,I
Ta = 100'C
-1
w
u.
"'
25
.r=
Z
«
Cl
-25
100
....z
W
0:
0:
=>
"rtT
~
-D.S
50
\
30
-
\
/ V
/'
io--''''''
~ .... 1-"
-D. 1
.,
j
-D.3
'\
0
0
[)
~
'):-'?J
,0
J
I
-D.05
10
-D.03
-1
-D.5
-10
-3
-30
-100
-D.6
-3
-1
COLLECTOR CURRENT IC (mA)
FIG. 3 hFE - IC
-50
COMMON EMITTER
IC/IS= 10
-3
J
~
Z
-1
0
~
-
:::-
~
!
w w
/:;}l
::E
w
-0.5
b
oO'C
~
ci:
0
13w
-0.1
...J
...J
0
0
=>
0
0:
8
0
~/
V
~
~
W
...J
...J
I
/
0
0
-10
-25
-D.05
I
-1
-3
I
o
-10
-30
-100
o
-300
tq
~)
-20
0
25
-D.03
-D.6
-30
0:
0:
IJ
-0.3
I
<
§.
.9
....z
w
0:_
....=»
..:
I
-40
1~'1
0
>
-300
1
COMMON EMITTER
VCE = -5V
II
Cl
-100
FIG. 4 VCE(sat) - IC
-5
w
-30
-10
COLLECTOR CURRENT IC (mA)
J
-D.2
-D.4
on
'l'
J J
II
-D.6
-D.B
BASE-EMITTER VOLTAGE VSE (V)
COLLECTOR CURRENT IC (mA)
FIG. 6
FIG.5 VCE(sat) -IC
585
IC - VeE
-1.0
-1.2
-300
I
I I
1200
II II
I 11111_
IC MAX. (PULSE)
~
*
.§.
U
-100
II.
CD
Z
f--
IC MAX. (CONTINUOUS)
-SO
::>
I
-10
12
U
w
0
'" Tot-.:;-i-
-5
U
-3
*
'!.-
\.
SINGLE NONREPETITIVE PULSE
Ta =25°C
II.
1\
,
a:
800
r---.,
T
600
CD
.......
400
0
I-
U
'""
I'....
"""- .......
r-....
..........
-'
-'
0
200
U
0 0
40
60
60
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 7
100
120
AMBIENT TEMPERATURE Ta (OC)
-1
-10
...... ......
...... ....... :".
~~
20
FIG.8
-3
......
.......
....... ......
W
""
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
CDTa = 25°C
- -
0
«'~;,",
/Q
Z
-'
-'
iii
en
is
a:
w
3:
0""
w
a:
a:
a:
~">"'.;ji
~
~ ---t-
°0
-30
I-
u
~
" "-
<
.§.
.9
f--
0
CD MOUNTED ON CERAMIC
SUBSTRATE (2SOmm 2 x 0.81)
1000
SAFE OPERATING AREA
586
PC-Ta
140
160
SURFACE-MOUNT
D71Y.8T1
PNP POWER TRANSISTORS
-30 VOLTS
-800 mAMP, 500 mWATTS
Designed for audio frequency amplifier applications.
PNP
COLLECTOR
Features:
• High DC current gain: hFE = 100 - 320
• Suitable for output stage of 1-Watt amplifier
CASE STYLE SOT-89
• PD=1 - 2W (Mounted on ceramic substrate)
EMITTER
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.181
(4.6 MAX.)
• Small flat package
• Complementary to D70Y.8T1
• See page 840 for mounting and handling considerations.
MARKING SYSTEM
~
R1
TYPENAME
hFE
DESIGNATION
hFE DESIGNATION
1) 70·240
2) 70-140
3) 120-240
maximum ratings (TA =25 0 C)
(unless otherwise specified)
SYMBOL
VCEO
VCBO
VEBO
D71Y.8T1
-30
-35
-5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ic
-800
mA
Base Current - Continuous
Total Power Dissipation @Tc = 25°C
@Tc= 25°C(1)
18
Po
-160
500
1000
rnA
mWatts
TJ, TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Operating and Storage
Junction Temperature Range
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm 2 x O.Bt).
(2) See page B41 for thermal considerations.
587
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
V(BR)CEO
-30
-
-
Volts
Collector Cut-off Current
(VCS =-3SV, IE =0)
ICSO
-
-
-100
nA
Emitter Cutoff Current
(VES =-SV, IC =0)
IESO
-
-
-100
nA
hFE
100
320
-
-0.7
V
-0.8
V
CHARACTERISTIC
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =-10mA, Is =0)
on characteristics
DC Current Gain(3)
(IC =-100mA, VCE =-1V)
(Ic =-700mA, VCE =-1V)
Collector-Emitter Saturation Voltage
(Ic =-SOOmA, Is =-20m A)
Base-Emitter Voltage
(VCE =-1V, Ic =-10mA)
VCE(Sat)
-
-
VSE(on)
-O.S
-
3S
-
(3) See page 44 for hFE range.
-600
<"
.s
-600
.!:l
...z
w
a:
a:
::J
-400
r/
Y
a:
§w
--'
--'
0
I
'I' ~
(,)
-200
(,)
1000
",L /-1~
.L.~
~ ...-!...- -4
~V
~
-3
COMMON EMITTER
Ta=25'C
500
Ta = l00'C
-
w
Ii.
25
.l:
-25
(!l
...z
w
a:
a:
::J
(,)
(,)
I
c
IB= 1 mA
100
50
30
COMMON EMITTER
VCE= 1V
I
10
0
0
-2
-4
f:::; ~1IIf
Z
;;(
-2
Y
r
-
300
-6
-8
-1
-10
-3
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 2
FIG. 1 Ie - VCE
588
hFE - Ic
-1000
-1
z
-O.S
~
-0.3
-BOO
COMMON EMITTER
lellB - 25
COMMON EMITTER
0
0::_
VCE
,
~~
"
en ;:ill
0::
w iii
j:~
_1~c:§f0 .4~1I
::E~
O...J
>-0
tl>
w
...J
-0.05
-0.03
.9
z>-
W
0::
0::
~
tl
0::
...J
fl"
-400
0
>tl
w
-25
0
tl
-600
.§.
"'rz
-0.1
,\,,,
0::>-
<"
-200
-3
-10
-30
-100
-300
-1000
J
I
COLLECTOR CURRENT IC (rnA)
II
)
FIG.3 VeE (sat) - Ie
o
-O.B
-0.4
-3000
'"
<"
.§.
-"
~
*
\
"'
FIG. 4 Ie - VBE
I
-;
"'"#
'.
is'"*-
1.2
0.. ~
O.o~
""-2
1.0
~
Z
0
;::
'"'1r,.0"
"ina.
'It
-100
en
tl
0::
O.B
is
~
-50
w
...J
-30
tl
...J
CD MOUNTED ON CERAMIC
SUBSTRATE
(250mm 2 x O.BI)
CD
)'10
~b "' I
-300
0
tl
*
w~
~-
PULS~" '
oa. a.tl
0.6
CD
0::
0
t3w
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
CDTa
"
j'-.... ......
0.4
...J
...J
-10
0
tl
=25°C
"
0::-
SINGLE NONREPETITIVE
Ta = 25°C
......
".............
-3
",
...... .......
0.2
-5
-0.3
-1.6
-1.2
BASE-EMITTER VOLTAGE VBE (V)
ICMAX
~
(CONTINUOUS)
.9
z>W
0::
0::
IC MAX (PULSE)
;..~
-500
~
"
0
tl
-1000
-
~I
...J
...J
-0.Q1
-1
=lV
......
...... ......
-1
-3
-10
-30
-100
-300
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG.5
40
60
60
100
AMBIENT TEMPERATURE Ta (0G)
FIG. 6
SAFE OPERATING AREA
589
I'-..
I" ~
0
Pc - Ta
120
140
160
590
SURFACE-MOUNT
PNP POWER TRANSISTORS
D71Y1.5T1
-30 VOLTS
-1.5mAMP,500mWATTS
Oesigned for audio frequency amplifier applications.
PNP
COLLECTOR
Features:
• Suitable for output stage of 3 watt amplifier
• PO=1 ~ 2W (Mounted on ceramic substrate)
EMITTER
CASE STYLE SOT-89
• Small flat package
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.181
(4.6 MAX.)
• Complementary to D70Y1.5T1
• See page 840 for mounting and handling considerations.
@
MARKING SYSTEM
TYPENAME
H1
.016· .002 +.003
(0.4 -0.05) (+0.08)
hFE
DESIGNATION
.~~:! o~~: -+-"-i--+-- .~~~ ; o~~
hFE DESIGNATION
1170-240
2) 70-140
3) 120-240
maximum ratings (TA = 25 0 C)
(unless otherwise specified)
SYMBOL
VCEO
VCBO
VEBO
D71Y1.ST1
-30
-30
-5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
-1.5
A
Base Current - Continuous
Total Power Dissipation @TC
@ TC
Operating and Storage
Junction Temperature Range
IB
Po
-0.3
500
1000
mWatts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
=25°C
=25°C(1)
thermal characteristics(2)
(1) Mounted on ceramic substrate (250mm 2 x 0.8t).
(2) See page 841 for mounting and thermal considerations.
591
A
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(Ic =-10mA, IB =0)
V(BR)CEO
-30
-
-
Volts
Emitter Base Breakdown Voltage
(IE =-1mA, Ic =0)
V(BR)EBO
-5
-
-
V
Collector Cutoff Current
(VCB =-30V, IE =0)
ICBO
-
-
-100
nA
Emitter Cutoff Current
(VEB =-5V, IC =0)
lEBO
-
-
-100
nA
hFE
100
-
320
-
VCE(sat)
-
-
-2.0
V
VBE(on)
-
-
-1.0
V
CHARACTERISTIC
off characteristics
on characteristics
DC Current Gain (3)
(IC =-500mA, VCE
=-2V)
Collector-Emitter Saturation Voltage
(Ic =-1.5mA, IB =-0.03A)
Base-Emitter Voltage
(VCE =-2V, Ic =-500mA)
(3) See page 44 for hFE range.
1000
.y:~
-1.2
$
..9
fZ
w
a:
a:
:>
u
-0.8
::..
...,. ~
1/V
If
/'
/
~
'/
COMMON EMITTER
Ta = 25'C
-~
0
f-
U
W
..J
..J
--
/'
0
~
-0.4
Ta = 100'C
500
w
u.
.<=
Z
300
25
;;:
~
fZ
r- 1"-,..
-25
C!l
100
a:
a:
-3
:>
50
Cl
30
u
u
. -2
COMMON EMITTER
VCE = 2V
I
IB= 1 rnA
10
-1
I
~
-4
-8
-10
-30
-100
FIG. 2 hFE - IC
-12
-16
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
-3
COLLECTOR CURRENT IC (rnA)
0
o
~
w
f / ~ i,....-- ~-
a:
u
-/~
IC - VCE
592
-300
-1000
-3000
-1.8
COMMON EMITTER
I
-3
COMMON EMITTER
ICIIB = 50
z
0
VCC-2V
-1
-1.2
;::
«
a:_
~~
« ""
-0.3
51l\l
'\'«
-0.1
~ !w
w
~~
a:tO..J
t-O
u>
w
..J
..J
0
~
.9
- 0.5
U
t-
§
i'5
a:
~
a:
::J
f!"
-0.8
U
Ta -l00'C
-0.03
W
U
\\_~:
IJ
-10
-30
-100
-300
-1000
-3000
o
FIG.3 VCE(sat) -IC
IC MAX (PULSE)
-3000
"
IC MAX.
1\tT
-1000
g
z
w
~
-100
*'\
h..;" ,\
CD
"q,~...... ~
z
0
;::
~
• "'..*"-'
,,-'
~
en
*
-30
"-
.SINGLE NONREPETITIVE PULSE
Ta = 25'C
!li;:-
0.8
I\..
U
-1
-3
-10
-30
-100
CDTa= 25°C
" "I\... ,
'-
.... r-..,
r---.. ........
0.2
0
-0.3
1"'-0. .......
0.4
..J
..J
0
-5
-0.1
CD
a:
§w
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
-10
0.8
d\
~
U
..J
..J
0
FIG. 4
~~'*
~i' II
"'<,::"
,~~
::J
-1.6
IN. \ ...
t\..~00"
'"
-300
-1.2
-0.8
BASE-EMITTER VOLTAGE VBE (V)
'l
a:
a:
a:
0
......
-500
.9
t-
-0.4
III
*
(CONTINUOUS)
;(
/ /)
o
COLLECTOR CURRENT IC (rnA)
J
T7
-0.4
-0.01
-1
1)1
U
..J
..J
0
-0.05
U
lIJ
a:
0
t-
o
20
40
60
80
""
...........
100
120
AMBIENT TEMPERATURE Ta (0 C)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG.5 SAFE OPERATING AREA
FIG. 6
593
Pc-Ta
I\...
:--...
1"'~
140
180
594
SURFACE-MOUNT
D72F5T1,2
NPN POWER TRANSISTORS
d!P.
~
BASE1?\
Designed for high current switching applications.
=3A)
• High Speed Switching Time: tstg
= 1.0f..Ls (Typ.)
NPN
~
Features:
• Low Collector Saturation Voltage
: VCE(sat) =O.4V (Max.) (at IC
50 VOLTS
5 AMP, 20 WATTS
COLLECTOR
CASE STYLE D-PAK
I;
~
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.26
(6.8 MAX.)
~I:
~
• Complementary to D73F5T1,2
(S.2
± 0.2)
~~
C\i
-
EMITTER
.098
(2.S MAX.)
--I
.24
(0.6 MAX.)
• Suffix "2" designates lead formed version
• See page 840 for mounting and handling considerations.
.043 ± .008
.037
(1.1 ±0.2)
(O.9SMAX.)
maximum ratings (TA = 25° C)
(unless otherwise specified)
SYMBOL
Vceo
VCBO
Veso
D72F5T1,2
50
60
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
5
A
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
Is
Po
1
1.0
20
A
Watts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
thermal characteristics(1)
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
260
(1) See page 841 for thermal considerations.
595
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
V(BR)CEO
SO
-
-
Volts
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 10mA. Is = 0)
Collector Cut-off Current
(Vcs = SOV, IE::;: 0)
Icso
-
-
1
}LA
Emitter Cutoff Current
(VES = SV, Ic = 0)
IESO
-
-
1
}LA
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 11
on characteristics
DC Current Gain(2)
(Ic = 1A, VCE ::;: 1V)
(Ic = 3A, VCE = 1V)
Collector-Emitter Saturation Voltage
(Ic = 3A, Is::;: 0.1SA)
Base-Emitter Saturation Voltage
(Ic = 3A, Is = 0.1SA)
-
240
-
0.2
0.4
V
0.9
1.2
Volts
-
0.1
-
1.0
-
0.1
-
hFE
70
hFE
30
VCE(sat)
VSE(sat)
-
-
switching characteristics
Turn-on Time
Vcc = 30V
ton
Storage Time
IS1 = -IS2 = 0.1SA
Fall Time
Duty Cycle
~
tstg
1%
tf
}LS
(2) See page 43 for hFE ranges.
100
90
1--__t_----:::oP::::.....".
80
70
eo
t---:1fiI5t'5oo"'"E::::;~ 50
~_--.40
I-ar..~'=-"-+--f 30
OUTPUT
~_""--20
lOll
200
8
100
COLLECTOR EMITTER
VOLTAGEVCE (V)
BASE CURRENT
IB(mA)
FIG. 1 SWITCHING TIME TEST CIRCUIT
VCE = 1 V
FIG.2
S96
COMMON
EMITTER
Tc = 2S'C
STATIC CHARACTERISTICS
1.2
COMMON EMITIER
Tc: 25·C
1.0
COMMON EMITIER
Tc: loo·C
1.0
w
~
UJ
~~.
::E
~
0.6
'l'>
a:
e
&l...J
Cl
0.8
~
-
~f ~f
«
E
:2
I
"
-
_rtl
0.4
I
...J
o
o
,)
0.2
a
~
~
J
J
I
j
1/ 1/
J
II / /.
V V l/
~ ~ ~~
~~ ~ r-
0.6
w
::E
UJ 0
200
a:>
0
>0
300
~ ~ ~J
i - I---
>
a:
~~
j
J
0
I
.
0.8
~
&1 1~/!§1
-
r-- I--r-- I--- _rtl"
0
0.4
UJ
500
...J
...J
j
0
0
0.2
1
I
1
I
/
~ ~~
~~
4
a~
a
7
&/ &1 -I -glli/
I---
II I I /
I
L
V
.1.
~~
I/,L
v:. ~ ~ ~
V
lS0
.200
SOO
~
3
COLLECTOR CURRENT Ic (A)
FIG.3
~
~~
I---
4
COLLECTOR CURRENT IC (A)
VCE - IC
FIG. 4
VCE -IC
1.2
COMMON EMITIER
Tc: ·SS·C
1.0
w
,
Cl
~
0.8
0
>
a:
I--
~~
w
::E
w 0
0.6
a:.>
0
'"
"
.!!l
0.4
UJ
)
...J
...J
0
0
0.2
1I
&1- ~~
~~
j
"1
E
t-t--
~
«
~t- t--
I--
V~
2S0
300
~~
500
1/
)
~~
IP""
a
./
V
1 1
V/ 1/ .JI'
II
""'"
3
4
7
6
COLLECTOR CURRENT IC (A)
FIG. 5
VCE - IC
1,000
COMMON EMITIER
VCE: lV
SOO
UJ
300
u.
Tc: loo·C
0.3
Cl
a:
a:
/
~~
;;:
UJ
COMMON EMITIER
IC/I B·2O
O.S
.r=
Z
>z
1
25
~~
f""'ooo. ~
100
~c'
a. 1
~~
::J
0
0
0
·S5
50
~
30
"
'"""
,<::fl
0.05
0.03
I •
10
. 0.03
~;
0.0 1
0.05
0.1
0.3
O.S
3
5
0.02
10
0.05
0.1
0.3
0.5
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT Ic (A)
FIG. 7 V CE(sat) - Ie
FIG. 6 hFE - IC
597
3
10
10
5
COMMON EMITIER
ICIIB= 20
COMMON EMITIER
Vee = 1V
5
4
3
3
Te = -55'C
u
~
"
\
25
100
o. 1
. 0.03
0.05
0.1
0.3
5
3
0.5
o
10
o
I
I
.111
'I
0.8
0.4
COLLECTOR CURRENT IC (A)
ct
iii
(D
I-- r-
20
IC MAX (PULSED)
(DTe=Ta
INFINITE HEAT SINK
5
(DSO' SO, O.B mm I
CERAMIC
3
IC MAX (CONTINUOUS)
'" '"'
16
~~
fr.t'
0:
12
~
...J
...J
......
",
2.4
®
""
®
20
40
60
80
~
0.3
100
120
8
"
140
" "~ ,
0.1
F
*
I--
0.03 I -
160
III
SINGLE NONREPETITIVE PULSE
Te= 25'C
AMBIENT TEMPERATURE Ta ('C)
0.0 t
0.1
1'1'
~f-
"
f--
I-
1=
l-
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE
I-
I--
l-
FIG. 10 Pe - Ta
\~
u
0.05 I-I--
~
'-
-if.- -if.-
~
0.5
I
.......
0
U
o
o
0,,\
.
~
a
r--..
~~
t-\'\:'
. . -=-
I\,
n
~!
w w
Te: -55'C
I=:?
~
~~
;.--
d:~
~6
VI""
~
0>
w
'\ \
:l
500
-.LL
300
0.1
8
COMMON EMITTER
vCE: 2V
0.3
0.5
3
5
0.5
0.3
0.2
10
r:;;:;:; ~
~
~
25
100
COMMON EMITTER
IC/18: 500
I
0,5
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG. 6 hFE - IC
FIG. 7 VCE(sat) - IC
601
I
I
5
I
COMMON EMITIER
IC/IB = 500
5
I""-
~
1=
3
~
12
flj
I----
Tc--55'C
25
I---I----
c:.---
CDTc=Ta
INFINITE HEAT SINK
16 rCD
'"' "-
i5
CD NO HEAT SINK
'\
~!
f;:::== ~
~
a:
n.t)
I\-
'\
8
'\
~
100
""
...J
5
0
4 rCD
r--.
rCD
l"'- t:::-
0.5
0.2
CD CERAMIC SUBSTRATE
50 x 50 x 0.8 mm t
0.5
40
3
COLLECTOR CURRENT IC (A)
*
IC MAX (PULSED)
I
3
I I
)..
ICMAX
(CONTINUOUS)
:;:
'"
.~
~*
~
.Y
>zw
a:
a:
,.,.0"o~
::l
0,\
~, ~ \.
0.5
0
t;
w
...J
...J
160
FIG.9 Pe-Ta
10
0
l'\
AMBIENT TEMPERATURE Ta ('C)
FIG. 8 VBE(sat) - Ie
a:
"""
12\1
80
I
0.3
II
0
t)
0.1
t
~
0.05
ttt-
*
\.
" '"'9v\. 1\
1\
\
SINGLE NONREPETITIVE PULSE
Tc = 25'C
,
I\~
,,'
><==
:Ii
CURVES MUST BE DERATED LIN EARL V
WITH INCREASE IN TEMPERATURE
~1'1
0.03
3
5
10
30
50
COLLECTOR-EMITIER VOLTAGE VeE (V)
FIG.10 SAFE OPERATING AREA
602
=
@-
100
-
200
180
200
SURFACE-MOUNT
D72K3D1,2
NPN POWER DARLINGTON
TRANSISTORS
1JjJdJ/J.
Designed for switching applications, hammer drive, pulse
motor drive applications, power amplifier applications.
Features:
• High DC Current Gain
: hFE(1) = 2000(Min.) (VCE
40 VOLTS
3 AMP, 15 WATTS
CASE STYLE D-PAK
=2V,
• Low Saturation Voltage
: VCE(sat) = 1.SV (Max.) (lc
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
IC = 1A)
ml~
~~
.09B
(2.5 MAX.)
.24
£!.
(0.6 MAX.)
=2A)
• Complementary to D73K3D1,2
• Suffix "2" designates lead formed version
• See page 840 for mounting and handling considerations.
.043
.037
± .OOB
(1.1 ±0.2)
(0.95 MAX.)
.024
(0.6 MAX.)
J~
EQUIVALENT CIRCUIT
COLLECTOR
BASE
o---:--+-----{
j
(0.95 MAX)
.024
(0.6 MAX.)
.063 ± .00B
~"":-T-=---,-_~-,-_--,-_--.:(~1.6 ± 0.2)
EMITTER
maximum ratings (TA
=25° C) (unless otherwise specified)
SYMBOL
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
VCEO
VCSO
VESO
Collector Current - Continuous
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@Tc=25°C
. Operating and Storage
Junction Temperature Range
D72K3D
40
60
5
Volts
Volts
IC
3
A
IS
Po
0.3
1.0
15
Watts
TJ. TSTG
-55 to +150
°C
thermal characteristics(1)
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
235
(1) See P!lge 841 for thermal considerations.
603
UNITS
Volts
A
electrical characteristics (TA
I
=25
0
C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
V(BR)CEO
40
-
-
Volts
Collector Cutoff Current
(VeB =60V, IE =0)
ICBO
-
-
20
p.A
Emitter Cutoff Current
(VEB =SV, Ic =0)
lEBO
-
-
2.S
mA
CHARACTERISTIC
off characteristics
. Collector-Emitter Breakdown Voltage
(Ic = 2SmA, IB =0)
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 10
on characteristics
-
hFE
2000
-
-
hFE
1000
-
VCE(Sat)
-
-
1.S
V
VBE(sat)
-
-
2.0
Volts
VCC
ton
-
0.1
Duty Cycle ~ 1%
-
1.0
Fall Time
tstg
tf
-
p's
Storage Time
=30V
IB1 =-IB2 =6mA
DC Current Gain(2)
(Ie = 1A, VCE = 2V)
(Ic =3A, VCE = 2V)
Collector-Emitter Saturation Voltage
(Ie = 2A, IB = 4mA)
Base-Emitter Saturation Voltage
(Ie = 2A, IB = 4mA)
switching characteristics
Turn-on Time
0.2
(3) See page 43 for hFE ranges.
4
I
COMMON EMITIER
T~ =2S"C
'·'rFti
~
OUTPUT
201'5
3
lZw
........: ~
a:
a:
13
.....--1
)82
I
2
~~
a:
~
&l
8
~
'rt
::l
IIJ\IV\,oo<....,.vv._
L ____ _
--
..... ~ ~
J:l
1
m
o
o
)
~
I
-
200
Ie = 175 /AA
".
0
2
3
FIG. 2 IC - VCE
604
250_
225
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG. 1 SWITCHING TIME TEST CIRCUIT
~
4
5
4
-,
4
COMMON EMITIER
Tc= 100'C
~
COMMON EMITIER
Tc = -55'C
3
~
"...... ~
a:
aa:a:
2
~
~
~/
iV
-'
-'
8
o
~
200
.Y
o
t
V
r-
~
-
~
I--
----
~
.Y
zw
...
,,-1-"
a:
a:
aa:
~
150_
--r
125
/
2
~
-'
I
-
-
I--
~
500
...-
I
1
I
"..
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG. 3
o,
9
5
1
-
'B= 300~A
'B= 1oo~A
0
-
400
V
-'
8
-
I
COLLECTOR-EMITIER VOLTAGE VCE (V)
IC - VCE
FIG. 4
IC - VCE
4
COMMON EMITIER
VCE = 2V
~
3
'/
.Y
~a:
a
1/
a:
2
§h
a:
~
o
U
1
0
~
J
u
'"
'
'"
III
J ~"
!I
~ rJ..I V
o
0.8
1.6
j
4.0
3.2
2.4
BASE EMITIER VOLTAGE VBE (V)
FIG. 5
IC - VBE
10,000
~
5,000
~
.Y
zw
...
"-\
o
~
\
1
/
~
...0
1,000
COMMON EMITIER
leI'B = SOO
z
~~
« z(/) lJl
",,""
a:
-'
-'
0
'I
3,000
:::l
U
w
1/
,Co J
.~"./1
,,-"
a:
a:
U
.1
Y
V
ffiw
1::,;'
""
::ill!
'\'«
a:f-
Tc = -SS'C
0-'
... 0
u>
w
u
1
:l
300
'0.1
0.3
O. ~
0.2
i.--'
100
--
O.S
COLLECTOR CURRENT 'C (A)
COLLECTOR CURRENT 'C (A)
FIG.6
2S
.'
I-10
O.S
I--
8
COMMON EMITIER
VCE = 2V
soo
~~
hFE -IC
FIG. 7 VCE(sal) - IC
605
S
10
I
COMMON EMITTER
ICIIB = 500
16
0Tc=Ta
INFINITE HEAT SINK
0
r--~
o CERAMIC SUBSTRATE
50 -50 - 0.8mm I
I\.
'\~
Tc = -55'C
I
1
'\
5'C
~~
25
100
r-
'\
1-0
r--
t"-0
0.5
0.1
o NO HEAT SINK
0.3
0.5
o
3
1
o
r- t -
40
80
COLLECTOR CURRENT IC (A)
IC MAX (PULSED)
'-l
IC MAX
(CONTINUOUS)
~~~+~~~-r--r-+-~-rHH
\
~
~~o
g
or.-
.9
~
a:
a:
::::>
u
a:
0.3
0.1
""'"
120
l\.
160
FIG.9 Pe-Ta
h
*
10~~~
0.5
~
AMBIENT TEMPERATURE Ta ('C)
FIG. 8 VS.E(sat) - Ie
~
8
,"-
\
I----+-+-+-t-hl
~.1
I
~
~-..L--l-...L..JL...L-.;I-J-LJL-_Urt\~,t--'--'-ttt1
*
I
1\
SINGLE NONREPETITIVE PULSE
~=~~
~
t- CURVES MUST BE DERATED LINEARLY
rr-WITH INCREASE IN TEMPERATURE
=
---
x<{
::.
0
w
u
>
0.05
1
3
10
30
50
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 10 SAFE OPERATING AREA
606
100
180
200
SURFACE-MOUNT
NPN POWER DARLINGTON
TRANSISTORS
Designed for pulse motor drive, hammer drive applications,
switching applications, power amplifier applications.
Features:
D72Y1.5D1,2
30 VOLTS
1.5 AMP, 10 WATTS
:/2JJ ZJi!)J
CASE STYLE D-PAK
• High DC Current Gain
: hFE = 4000(Min.) (VCE = 2V, IC = 150mA)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.098
sli
(2.5 MAX.)
·0
• Low Saturation Voltage
: VCE(sat) = 1.5V (Max.) (lc = 1A, IS = 1mA)
.24
~
(0.8 MAX.)
• Suffix "2" designates lead formed version
• See page 840 for mounting and handling considerations.
.037
(0.95 MAX.)
.043 ± .008
o
11.1 ±0.2)
-l '-to.6~~X.)
~ ;~~
EQUIVALENT CIRCUIT
r _ _ _ _ _ _~__C~LLECTOR
BASE Of----::-th:
1060~ x.)
JJ
.:
IL- _ _ _ _ _ _ _ JI
EMITTER
063± .008
(1.6 ± 0.2)
~--'---~-----r---'----~
maximum ratings (TA = 25° C)
(unless otherwise specified)
SYMBOL
VCEO
VCBO
VEBO
D72Y1.5D1,2
30
30
10
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
1.5
A
Base Current - Continuous
Total Power Dissipation @ T A = 25° C
@Tc=25°C
Operating and Storage
Junction Temperature Range
IB
PD
0.15
1.0
10
A
Watts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
thermal characteristics(1)
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
235
(1) See page 841 for thermal considerations.
607
electrical characteristics (TA = 25 0 C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
V(SR)CEO
30
-
-
Volts
off characteristics
Collector-Emitter Breakdown Voltage
(IC = 10mA, Is = 0)
Collector Cutoff Current
(VCS = 30V, IE =0)
Icso
-
-
10
p.A
Emitter Cutoff Current
(VES = 10V, IC = 0)
IESO
-
-
-10
p.A
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 10
on characteristics
DC Current Gain
(IC = 150mA, VCE = 2V)
4000
hFE
Collector-Emitter Saturation Voltage
(Ic = 1A, Is = 1mA)
Base-Emitter Saturation Voltage
(Ic = 1A, Is = 1mA)
-
-
-
VCE(sat)
-
-
1.5
V
VSE(sat)
-
-
2.2
Volts
-
0.18
p's
switching characteristics
Turn-on Time
VCC = 15V
ton
Storage Time
IS1 = -IS2 = 1mA
Duty Cycle ~ 1%
tstg
-
0.6
-
tf
-
0.3
-
Fall Time
600
II
COMMON EMITTER
TC=25'C
OUTPUT
500
<
.§.
150
60
r
50
400
J:l
I
fZ
I1J
0::
0::
:::J
U
40
300
I
0::
0
30
f-
U
I1J
..J
..J
0
FIG. 1 SWITCHING TIME TEST CIRCUIT
J
200
U
20
I
100
o
IS= lOIlA
)
o
0
2
3
4
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 2 IC - VCE
608
5
6
eoo
30
'100
I,)
<"
oS
I
l-
I
I-
Z
300
w
a:
a:
20
::I
15
200
It"'"
120
r
100
U
/'
~
r
a:
fd
140
300
:J
f:!
r
400
J:l
25
a:
8
160
500
35
I""'"
I
COMMON EMITTER
Tc" 50'C
I
eoo
iJ:l
600
I
COMMON EMITTER
TC" l00'C
200
.J
.J
60
60
0
I
U
10
40
100
100
le"5~
0 0
I)
18"
)
0
0
3
5
4
20~A
0
0
6
234
6
COLLECTOR-EMITTER VOLTAGE VCE (VI
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 4 IC - VCE
FIG.3 IC· VCE
COMMON EMITTER
VCE" 2V
1.0
I
0.8
u
§
g
J:l
ii)
a:
l-
"
Xl
I
I
I
0.6
~
0
'I'
a:
:;)
U
a:
0.4
~
~
.J
0
U
0.2
o
~'1
o
I
~I
/
1.2
0.8
0.4
J
1.6
2.0
2.4
eASE EMITTER VOLTAGE VeE (VI
FIG. 5
IC - VSE
20.000
10
Tc" lOO'C
~
25
'"z
5.000
I-
3.000
-50
1--
3
COMMON EMITTER
Ielle" 1000
ffiw
I:~
:qlj
~
'1'<
~~
tg
w
COMMON EMITTER
VCE" 2V
500
0.002
5
~>
1.000
30Q
~
;Iii
~
:;)
I,)
g
0
10.000
.~
t
z
.J
.J
0.5
\
100
0
0.03
0.1
0.3
3
FIG. 6
I I "I
0.1
COLLECTOR CURRENT IC (AI
25
0.3
I,)
0.01
-
Tc"50'C
0.002
0.01
0.03
0.1
0.3
COLLECTOR CURRENT IC (AI
hFE - IC
FIG. 7 VCE(sal)· IC
609
3
30
~
:;
w
0.5
~
0.3
W
==
f=
~
TC=-55°C
\
a:
-0.6
~ lj
w>
a:
-0.4
>
a:
~
~~
l?
~...J
-0.6
Ul
~
U;iS
a:-
....a
Ul
-0.4
0
0>
W
...J
..J
a
-0.2
0
-0.2
0
0
0
-7
-2
COLLECTOR CURRENT IC (Al
COLLECTOR CURRENT IC (Al
FIG. 3 VCE - IC
-1.0
w
CJ
-
g
a:
~~
-0.6
0
-0.4
1000
I
I
-O.B
«
!:i
fjl
COMMON EMITTER
Tc -55·C
=
-
«
E
'if
I? r"
J JJ
I If
@
0
-0.2
0
.~
i
~
)
V....V
JI'
~~~
COMMON EMITTER
VCE 1V
500
II ~-
w
Ie
.c
Z
;;:
Tc
....Z
::J
V
,..,.
~~
.;"
0
0
-400
=1oo·C
I
a:
a:
. -300
100
-.... ........
r
25
-
Cl
-55
-500
50
I#" I""'"
o
300
CJ
Ul
V
'("
J lh ~ ~ ~
...J
...J
0
I~
J!l
~
lj
~>
VCE -Ie
FIG.4
I~
20
-2
-1
-5
-4
-3
-7
·6
-0.03
FIG.5
-0.3
-0.1
-0.5
-1
-3-5
-10
COLLECTOR CURRENT IC (Al
COLLECTOR CURRENT IC (Al
FIG. 6 hFE - Ie
VCE - IC
-10
COMMON EMITTER
IC/IB - 20
-2
w
COMMON EMITTER
CJ
~
Ul
leils = 20
-1
Cl
«
0
>
!:i
0
Z
>
0
t=
,L
::»
.... ;a j
ffi
"LAI
-0.3
t:~
Tc = 1oo·C
~
~
0
/
..
...L.....,..
-0.1
a:
::> 10
~rI
.... .e
« w
ID
:!
-0.05
I
0
I
-0.03
-0.1
-0.3
"
Tc
-1
=-55°C
'"a:>
~~
Ul
~
-0.5
~~25
:::;
Ul
W
tiw
0
-3
z
a
~~
-0.5
iii
-5
-0.3
"
«
'"
ID
25
-55
100
-1l.1
-0.5
·1
-3
-5
-10
COLLECTOR CURRENT IC (Al
-0.03
-0.1
-0.3
-0.5
-1
COLLECTOR CURRENT IC (AJ
FIG. 8
FIG. 7 VCE(sat) - IC
613
VBE(sat) - IC
-3
-5
-10
28
CD Tc = Ta
COMMON EMITTER
VCE= 1V
-5
[
g
.P
~
z
-4
::1
-3
(J
J
a:
~
...J
...J
I
-2
8
l- f-
G
f-- t -1
o
.....
i'..
g
r-....
........
...J
I
-0.4
I'
12
a:
-55
"
JJ
o
~
0
~
'-- ~
......
16
11.
I-.:
50 X 50 X 0.8 mml
CD NO HEAT SINK
""i'o..
15
a:
w
I- t-25
CD CERAMIC SUBSTRATE
I - "-
CD
20
iiii
ffi
a:
a:
INFINITE HEAT SINK
24
8
I
-0.8
-1.2
-2.4
-2.0
-1.6
""
CD
CD
I
0 0
20
BASE-EMITTER VOLTAGE VBE (V)
80
40
80
100
120
AMBIENT TEMPERATURE Ta (OC)
FIG. 9
Ie - VBE
FIG. 10
-10
~
IC MAX (PULSED)
-5
IC MAX (CONTINUOUS)
,
*
~"\~~
~
.. ~
'3-0 ~
-1
-0.5
"\.
::1
(J
a:
~
-0.3
(J
~
...J
0
(J
-0.1
~*
II
l'
III
I'
~
l-
PULSE Tc = 25°C
I--0.03 I-
I-0.01
-0.1
ff--f-
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.3
-0.5
1=
~
1-' SINGLE NON REPETITIVE
-0.05
'.
-3
-1
f--I-5
-10
-30--50
COLLECTOR·EMITTER VOLTAGE VCE (V)
FIG. 11 SAFE OPERATING AREA
614
x
~
0
w
~
-100
Pc - Ta
"'-
i'...
140
180
SURFACE-MOUNT
PNP POWER DARLINGTON
TRANSISTORS
Designed for switching applications, hammer drive, pulse
motor drive applications, power amplifier applications.
Features:
• High DC Current Gain
: hFE(1) =2000 (Min.) (VCE
• Low Saturation Voltage
: VCE(sat) =-1.5 (Max.)
D73FY4D1,2
-80 VOLTS
-4 AMP, 15 WATTS
1J)J g!{]}J
CASE STYLE D-PAK
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
=-2V, IC =-1A)
(IC
.096
12.5 MAX.)
,26
16.8 MAX.)
.205 ± .006
~t;15.2±D2f
=3A)
.24
(0.6 MAX.)
• Complementary to D72FY4D1
• Suffix "2" designates lead formed version
• See page 840 for mounting and handling considerations.
.043± .008
('.' ±0.2)
.037
10.95 MAX.)
.024
(0.6 MAX.)
.. ._.- !I~
Wf,1
EQUIVALENT CIRCUIT
COLLECTOR
r------------,
JJ
BASE
.024
(0.8 MAX.)
.063 ± .006
,..-_,....-_---r_ _--.--_--.-_ _(-.'.6 ± 0.2)
'EMITTER
maximum ratings (T A = 25° C)
(unless otherwise specified)
SYMBOL
VCEO
VCBO
VEBO
D73FY4D1,2
-80
-100
-5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ic
-4
A
Base Current - Continuous
Total Power Dissipation @ T A = 25° C
@Tc=25°C
Operating and Storage
Junction Temperature Range
IB
Po
-0.4
1.0
15
Watts
TJ. TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
thermal characteristics(1)
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
235
(1) See page 841 for thermal considerations.
615
A
electrical characteristics (TA
I
=25
0
C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
V(BR)CEO
-80
-
-
Volts
Collector Cutoff Current
(VCB = -100V, IE = 0)
ICBO
-
-
-20
Jl.A
Emitter Cutoff Current
(VEB = -5V, IC = 0)
lEBO
-
-
-2.5
mA
CHARACTERISTIC
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = -10mA, IB =0)
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE 9
FBSOA
on characteristics
DC Current Gain(2)
(IC = -1A, VCE = -2V)
(Ic = -3A, VCE = -2V)
Collector-Emitter Saturation Voltage
(Ic = -3A, IB = -6mA)
Base-Emitter Saturation Voltage
(Ic = -3A, IB = -6mA)
VCE(sat)
-
-
VBE(sat)
-
-
ton
tstg
-
0.15
-
-
0.80
tf
-
0.40
-
hFE
2000
hFE
1000
-
-
-1.5
V
-2.0
Volts
switching characteristics
Turn-on Time
VCC = -30V
Storage Time
-IB1 = IB2 = 6mA
Duty Cycle;§; 1%
Fall Time
Jl.s
(2) See page 43 for hFE ranges.
-5
COMMON EMITTER
Tc =25·C
OUTPUT
-4
I
?
.9
!zw
-+-1
IS1
I
-3
~
a:
a:
"~
::;)
10n
o
k::: E:::=
·IbV ~
a:
~:l
IL-VVV-<_VV'o"-'
____ _
-2
~
8
m
-1
~
--::::::
~~
o
o
-1
~
-
-400
-350
-300
-250
Ie
-2
-3
=-200~A
~
I.
-4
-5
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 2 IC - VeE
616
-450
i""'"
~
FIG. 1 SWITCHING TIME TEST CIRCUIT
-500
0
-6
-s
-5
COMMON EMITTER
Te= 100"C
COMMON EMITTER
Te = -SS"C
-4
-4
~
J)
~
-3
~
:l
0
a:
f:!
I
~
-2
/. ~
0
~
....
~
~
~ ....-
8
~
-1
---- ---- -
a:
a:
--
-800
-3
:l
0
-250
ff- f-
a:
0
1.,......0-0
,
o
!zw
-300
I---- i---
~V
0
J)
bw
-200
L
kr'"
-2
-'
-'
0
-175
-600
-500
V
·0
-1
-150
Ie = -125 ~A
-700
~
Ta =-400 ~A
-
0
0
I
-2
-1
-3
-S
-4
o
-1
COLLECTOR-EMITTER VOLTAGE VCE (V)
-3
-2
-5
-4
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 4
FIG. 3 IC - VCE
IC - VCE
S
COMMON EMITTER
VCE=-2V
-4
'/
J
3
I
I
-2
~/~1
-1
o
0
~
"
~
Jill
lL ~ I
o
-0.8
-1.6
-2.4
-3.2
-4.0
-4.8
eASE EMITTER VOLTAGE VeE (V)
FIG. 5 IC - VeE
10,000
-S
QSV
,~
5,000
...w
'"
3,000
~
I!J
:l
0
0
V"
V
!zw
a:
a:
",-v'A
r
~
v
Y V
- "'"
0
~
a:_
~
COMMON EMITTER
Iclle= SOO
-3
,...->
.:l
II
ca~
a: w
w
"'
~I"
V
1,000
z
-'-
I=~
Siljj
'11<
a: I-
Te
.25
b~
r
w
-'
-'
0
COMMON EMITTER
VCE: -2V
500
0
300
-0.1
-0.3
-0.5
-1
-3
-5
""~
100
-O.S
-0.3
-0.1
-10
-0.3
-0.5
-1
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG. 6 hFE - IC
FIG. 7 VCE(sat) - IC
617
~
-1
0-'
c
~
=-SS"C
-3
-5
20
-1 0
COMMON EMITTER
IdIB=500
-5
16
z
0
~
-3
iii
-
Tc = -55'C
25
~
I\.
~w
U
4
-0.5
--
o
-0.3
-3
-1
-5
'\
(i)
(i)
-0.5
I\.
'\
0
-0.3
,
(i)NOHEATSINK
a:
...J
...J
-0.1
so so
~
~ri:'
100
-1
-
(i) CERAMIC SUBSTRATE
x x 0.8 mm t
(i)
12
C
a:w;;:
;;:-
....
~
(i)Tc=Ta
INFINITE HEAT SINK
I
o
~
\.
r- r60
40
"-"
120
I\.
160
AMBIENT TEMPERATURE Ta ('C)
COLLECTOR CURRENT IC (A)
FIG.9 Pe-Ta
FIG. 8 VBE(sat) - Ie
-1 0
*
IC MAX (PULSED)
~
-5
ICMAX
(CONTINUOUS)
-3
~
...
1>
r\~.
~
"%.
7f..
'*
'.
-,0\\
1
,,0
~,' '-
, ,
I
~
"
-
-
-
II
-0.03
1
\.1\
\
-3
-5
-10
-30
-so
-100
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG.10 SAFE OPERATING AREA
618
-200
160
200
·SURFACE-MOUNT
D73K3D1,2
PNP POWER DARLINGTON
TRANSISTORS
Designed for switching applications, hammer drive, pulse
motor drive applications, power amplifier applications.
:fJ)J~
Features:
• High DC Current Gain
: hFE(1) =2000 (Min.) (VCE
-40 VOLTS
-3 AMP, 15 WATTS
CASE STYLE D-PAK
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
=-2V, IC =-1A)
"'I~
.098
(2.5 MAX.)
~~
• Low Saturation Voltage
: VCE(sat) = -1.5V (Max.) (IC = -2A)
~
.24
(0.6 MAX.)
• Complementary to D72K3D1,2
• Suffix "2" designates lead formed version
• See page 840 for mounting and handling considerations.
.043 ± .008
(1.1 ±0.2)
.037
(0.95 MAX.)
J~
EQUIVALENT CIRCUIT
COLLECTOR
r -
BASE
-
-
-
-
I
0--....--..----;
-
-
-
-
--
--,
I
I
j
I
L
L..-_ _~---1""_-'_
-l
~~.-~-.~---rT~ER-M.-3'---~
EMITTER
maximum ratings (TA = 25°C)
.024
(0.6MAK)
.063 ± .008
(1.6 ± 0.2)
(unless otherwise specified)
VCEO
VC80
VE80
D73K3D1,2
-40
-60
-5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
IC
-3
A
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
18
Po
-0.3
1.0
15
Watts
TJ, TSTG
-55 to +150
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
thermal characteristics(1)
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
235
(1) See page 841 for thermal considerations.
619
A
electrical characteristics (TA = 25° C)
(unless otherwise specified)
CHARACTERISTIC
TYP
MAX
UNIT
-40
-
-
Volts
ICBO
-
-
-20
p.A
lEBO
-
-
-2.5
mA
1 .SYMBOL .1
MIN
V(BR)CEO
Collector Cutoff Current
(VCB = -60V, IE = 0)
Emitter Cutoff Current
(VEB = -5V, IC = 0)
1
off characteristics
Collector-Emitter Breakdown Voltage
(IC = -25mA, Is = 0)
second breakdown
I
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 10
on characteristics
DC Current Gain(2)
(IC = -1A, VCE = -2V)
(Ic = -3A, VCE = -2V)
hFE
2000
hFE
1000
Collector-Emitter Saturation Voltage
(Ic = -2A, IB = -4mA)
VCE(sat)
Base-Emitter Saturation Voltage
(Ie = -2A, IB = -4mA)
VBE(sat)
-
-
-
-
-
-1.5
V
-
-2.0
Volts
0.30
-
p's
switching characteristics
Turn-on Time
VCC = -30V
Storage Time
-IS1 = IS2 = SmA
Duty Cycle ~ 1%
Fall Time
-
ton
tstg
tf
O.SO
0.25
(2) See page 43 for hFE ranges.
·5
COMMON EMITIER
Tc=25'C
OUTPUT
IS2
INPUT
.-------,
-4
-I
~
1
....9
......--1
IS1
I
~
a:
a:
::J
u
a:
IL'-'V'1fV-4--'iIV'I<_
____ _
~
&l..J
m
·3
.L! ~
·2
~~
8
~
r..
·1
---
..--
.--~ ~
I"'""
o
-
r
0
-1
-2
-4
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG. 2
620
-250
-225
18 = -175 "A
)
o
-300
-275
-200
I
FIG. 1 SWITCHING TIME TEST CIRCUIT
--
IC - VCE
-5
-6
S
-5
COMMON EMITTER
Tc; -SS'C
COMMON EMITTER
Tc; l00'C
-4
-4
I
$
},)
w
a:
a:
-3
~I -
::l
U
a:
~
U
w
'-" ~ ~
-2
-
k::: ~ ~ I--I--
-'
-'
0
U
~~
-1
o
~
L
o
,~ V
....
I"""
W
-600
-3
a:
a:
-17S
::l
U
-lS0
§
-2
V-
~
8
I
i.-'"
o
-S
o
0
-1
-3
-2
-4
-6
-S
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG.3
-400
IB ; -300 ~A
0
-4
i--
II"
1
I
-soo
V
,/
a:
-12S
-3
-2
Z
-'
I
-1
/-
-200
18 = -100 ~A
- - --
},)
I
IZ
I
$
IC - VCE
FIG. 4
IC - VCE
-4
COMMON EMITTER
VCE; -2V
If/
/ II
-3
$
},)
IZ
w
a:
a:
::l
U
-2
a:
~
H!7"/!
U
w
-'
-'
0
U
-1
I II
J V.J r
o
-0.8
-1.6
-2.4
-3.2
-4.0
BASE EMITTER VOLTAGE VBE (V)
FIG. 5
IC - VeE
10,000
-S
,0
"If'
S,OOO
A
"C:
W
LL
/
~
3,000
1,000
COMMON EMITTER
lellB; SOO
3
~~
~ !
w w
W
..J
COMMON·EMITTER
VCE; -2V
SOO
-'
o
u
300
-D.l
-D.3
-D.S
-1
-3
-5
I;;;
100
-D.3
-D.S
-1
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG.6
~
-D. S
-D. 3
-0.1
-10
~
Tc - -sS'C
1
hFE -IC
FIG. 7
621
VCE(sat) - IC
-3
-S
-'0
COMMON EMITTER
ICIIB = 500
III
~
~
z
Q
::J
z
III
~
~
~,p
Tc = -55'C
~V
25
100
'\
8
'\
II:
~
&l...J
...J
-1
I\.
4 r(i)
8
~
r-(i)
~.3
-0.5
~r--
.1
~.5
·~.1
-3
-1
so -0.8mm I
(i)NOHEATSINK
'\
ffi~
~[[
ill
50 -
~
12
~c
-3
11
11:>
~
(i)CERAMIC SUBSTRATE
i=
~
1-II:
o!-
~-
~~ ~
::>
04--- 1
182 1
~
w
Cl
,:!-'
"
0,1
60.08
~
~=
g-
0
~-
0,06
m
0,04
0,6
FIG. 1 SWITCHING TIME TEST CIRCUIT
II:
III
·SINGLE NONREPETITIVE PULSE Ta' 25"C
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE,
0,8
2
4
6
8 10
20
40
60 80'00
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 2
626
SAFE OPERATING AREA
D74FI4D
NPN POWER DARLINGTON
TRANSISTOR ARRAY
60 VOLTS
4 AMP, 3 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small;,.sized available (3 in 1)
• Epoxy single-in line package (8 pin)
CASE STYLE SIP-8 PIN
• Zener diode included between collector and base
• High collector power dissipation: PD
(Three device action)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
=3W @ TA =25°C
• High collector current: IC = 4A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE
=2V, IC = 1A
ARRAY CONFIGURATION
:.1.1 J§l$1 ..
3
maximum ratings (T A = 25 0 C)
5
7
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VC80
D74F14D
60± 10
60 ± 10
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA = 25°C)
VE80
IC
ICM
18
6
4
6
0.5
Volts
A
Po
1.8
Watts
Po
3.0
Watts
TJ, TSTG
-55 to +150
°C
I ReJA
41.7
°C/W
TL
260
°C
Collector Power Dissipation
(Three Device Action, TA =25° C)
Operating and Storage
Junction Temperature Range
A
thermal characteristics
Thermal Resistance, Junction to Ambient
(Three Device Action)
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
627
electrical characteristics (TA = 25° C)
(unless otherwise specified)
CHARACTERISTIC
I
1
SYMBOL 1
MIN
TVP
MAX
I·
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 10mA, IB = 0)
VBR(CEO)
50
SO
70
Volts
Collector-Base Breakdown Voltage
(Ic = 10mA, IE = 0)
VBR(CBO)
50
SO
70
Volts
Collector Cutoff Current
(VCB = 45V, IE = 0)
ICBO
-
-
10
/LA
Collector Cutoff Current
(VCE = 45V, IB = 0)
ICEO
-
-
10
/LA
Emitter Cutoff Current
(VEB = SV, IC = 0)
lEBO
O.S
-
2.0
mA
2000
1000
-
-
15000
-
on characteristics
DC Current Gain
(Ic = 1A, VCE = 2V)
(Ic = 3A, VCE = 2V)
hFE
-
Collector-Emitter Saturation Voltage
(Ic = 3A, 18 = 10mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(Ic = 3A, IB = 10mA)
VBE(sat)
-
-
2.0
Volts
ton
-
0.2
switching characteristics
Turn-on Time
Storage Time
Fall Time
VCC = 30V
181 = -IB2 = 10mA
Duty Cycle = 1%
tstg
tf
OUTPUT
201'5
'''~
IB1
j"" - - - -
---.
-I
...--1
IB2
I
I""""""""~",,,"",,,,
L
____ _
m
FIG.1 SWITCHING TIME TEST CIRCUIT
628
3.0
-
0.5
-
/LS
D74FY2D
NPN POWER DARLINGTON
TRANSISTOR ARRAY
80 VOLTS
2 AMP, 3 WATTS
. Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (3 in 1)
• Epoxy single-inline package (8 pin)
• High collector power dissipation: Po
(Three device action)
=3W @ TA =25° C
CASE STYLE SIP-8 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC = 2A (Max.)
• High DC current gain:
hFE =2000 (Min.) @ VCE =2V,
IC= 1A
ARRAY CONFIGURATION
maximum ratings (TA
=25
0
C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VCBO
D74FV2D
80
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, T A = 25° C)
VEBO
IC
ICM
Is
8
2
3
0.5
Volts
A
Po
1.8
Watts
Po
3.0
Watts
TJ, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient
!R8JA
41.7
°CIW
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
TL
260
°C
Collector Power Dissipation
(Three Device Action, T A = 25° C)
Operating anq Storage
Junction Temperature Range
80
UNITS
Volts
Volts
A
thermal characteristics
629
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(IC = 10mA, IB = 0) .
VBR(CEO)
80
-
-
Volts
Collector-Base Breakdown Voltage
(Ic = 1mA, IE = 0)
VBR(CBO)
80
-
-
Volts
ICBO
-
-
10
p.A
ICEO
-
-
20
p.A
lEBO
-
-
4
mA
2000
-
-
-
CHARACTERISTIC
off characteristics
Collector Cutoff Current
(VCB = 80V, IE = 0)
Collector Cutoff Current
(VCE = 80V, IB = 0)
Emitter Cutoff Current
(VEB = 8V, IC = 0)
on characteristics
DC Current Gain
(Ic = 1A, VCE = 2V)
hFE
Collector-Emitter Saturation Voltage
(Ic = 1A, IB = 1mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(Ic = 1A, IB = 1mA)
VBE(Sat)
-
-
2.5
Volts
ton
-
0.4
-
p's
4.0
-
switching characteristics
Turn-on Time
Storage Time
Fall Time
VCC = 30V
IB1 = -IB2 = 1mA
Duty Cycle = 1%
tstg
tf
OUTPUT
201'5
H
f-
'B'~
'"
.!!l
...--1
IS2 I
I '-'V''''-'4-V'V'ol-_
L
____ _
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
630
0.6
-
D74FY4D
NPN POWER DARLINGTON
TRANSISTOR ARRAY
80 VOLTS
4 AMP, 3 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (3 in 1)
• Epoxy single-inline package (8 pin)
• High collector power dissipation: Po
(Three device action)
=3W @ TA =25°C
CASE STYLE SIP-8 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC =4A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = 2V, IC = 1A
ARRAY CONFIGURATION
.OS9R
(Of5f
maximum ratings (TA
=25
0
C)
'ilr-----\I
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VC80
D74FY4D
80
100
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, T A =25° C)
VE80
Ic
ICM
18
5
4
Volts
A
0.4
A
Po
1.8
Watts
Po
3.0
Watts
TJ, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient
I ROJA
41.7
°CIW
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
TL
260
°C
Collector POWer Dissipation
(Three Device Action, TA =25° C)
Operating and Storage
Junction Temperature Range
6
thermal characteristics
631
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(Ie = 10mA. IB = 0)
VBR(CEO)
80
-
-
Volts
Collector-Base Breakdown Voltage
(Ic = 1mA, IE'= 0)
VBR{CBO)
100
-
-
Volts
?O
Jl.A
20
Jl.A
CHARACTERISTIC
off characteristics
--
Colle,ctor Cutoff Current
(VeB = 100V, IE = 0)
ICBO
Collector Cutoff Current
(VCE = 80V, IB = 0)
ICED
-
-
Emitter Cutoff Current
(VEB = 5V, Ic = 0)
lEBO
-
-
2.5
mA
2000
1000
-
-
-
-
---
~
on characteristics
DC Current Gain
(IC = 1A, VCE = 2V)
(Ic == 3A, VCE = 2V)
hFE
Collector-Emitter Saturation Voltage
(Ic = 3A, IB = 6mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(Ic = 3A, IB = 6mA)
VBE(sat)
-
-
2.0
Volts
ton
-
0.2
-
Jl.S
1.5
0.6
-
switching characteristics
Turn-on Time
VCC = 30V
IB1 = -IB2 = 6mA
Duty Cycle = 1%
Storage Time
Fall Time
tstg
t1
CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA
(SINIG~E{ION~EPEITI1 PULSE, NO HEAT SINK)
O~o~_
100
-
I. ONE CIRCUIT ACTION
2, TWO CIRCUIT ACTION
3. THREE CIRCUIT ACTION +-+-t+r-t-HiZ=.!!!::i~F""'f+tt---t---t-tii
OUTPUT
161
+--+-+++--+--+-++<
!III
,------..,
po'
-I
I
..--1
162
c:
o
1
L ____ _
11J\j1V\l.....JV\tv-...
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
0.001
0,01
100
10
0.1
1000
PULSE WIDTH tw (sec)
FIG. 2 TRANSIENT THERMAL RESISTANCE VI.
PULSE WIDTH
~
tr
Z
~- 1 0 0 f - - - f - - - f w
a:
~
o
~
CONDITION: NO HEAT SINK
~
i5
ffi
c..
::;
~ 50~--~~~~~--~--+---+---+---+---+--4
§
~
CONDITION: NO HEAT SIN,I
4
ffi
w
>-
z
5
~
f--+'~--!----!----!---~~ ~II~~~I~
THREE CIRCUIT.
l:PC
~::~
1ito
~
2
ON~ CIII
8
3.0W
o
COLLECTOR POWER DISSIPATION Pc (W)
Clf!
CUlr
~
~~
o
t;
NUMBERS OF ACTIONED CIRCUIT
rJ.tIl~~
3
a:
o
25
Ir-'l
'11/
cr,Oiy
CU'T
50
--
75
r-....
~
100
AMBIENT TEMPERATURE Ta
FIG. 3 COLLECTOR POWER DISSIPATION vs.
JUNCTION TEMPERATURE
--- f'...
125
150
=(OC)
FIG. 4 TOTAL COLLECTOR POWER DISSIPATION
632
175
D75FY2D
PNP POWER DARLINGTON
TRANSISTOR ARRAY
-80 VOLTS
-2 AMP, 3 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (3 in 1)
• Epoxy single-inline package (8 pin)
• High collector power dissipation:
(Three device action)
Po = 3W @ T A = 25° C
CASE STYLE SIP-8 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC =-2A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = -2V, IC = -1A
ARRAY CONFIGURATION
3
5
7
~jl5$Ij@I1$¥I ..
maximum ratings (TA = 25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
D75FV2D
VCEO
VCBO
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, T A = 25° C)
VEBO
Ic
leM
18
-so
-so
-s
-2
-3
-0.5
A
Po
1.S
Watts
Po
3.0
Watts
TJ, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient
1:ROJA
41.7
°CIW
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
TL
260
°C
Collector Power Dissipation
(Three Device Action, T A = 25° C)
Operating and Storage
Junction Temperature Range
UNITS
Volts
Volts
Volts
A
thermal characteristics
633
electrical characteristics (TA = 25° C)
I
CHARACTERISTIC
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
VBR(CEO)
-80
-
-
Volts
VBR(CBO)
-80
-
-
Volts
ICBO
-
:-10
p.A
ICEO
-
-
-10
p.A
lEBO
-
-
-4
mA
2000
-
-
-
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 1mA, IB =0)
Collector-Base Breakdown Voltage
(Ic =-10mA,JE =0)
Collector Cutoff Current
(Vcs =-80V, IE =0)
Collector Cutoff Current
(VCE =-80V, Is =0)
Emitter Cutoff Current
(VES =-8V, IC =0)
---- - -- -- -
on characteristics
DC Current Gain
(Ic =-1A, VCE =-2V)
hFE
Collector-Emitter Saturation Voltage
(Ic =-1A, 'S =-1mA)
VCE(sat)
-
-
-1.5
Volts
Base-Emitter Saturation Voltage
(Ic =-1A, Is =-1mA)
VSE(sat)
-
-
-2.0
Volts
ton
-
0.4
p's
tstg
-
2.0
-
switching characteristics
Turn-on Time
Storage Time
Fall Time
VCC =30V
IS1 =-IS2 = 1mA
Duty Cycle = 1%
tf
0.4
OUTPUT
....-1
162
I
____ _....
IL'-""'''''"'1-'\1''''''
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
634
PNP POWER DARUNGTON
D75FY4D
TRANSISTOR ARRAY
-80 VOLTS
-4 AMP, 3 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (3 in 1)
• Epoxy single-inline package (8 pin)
• High collector power dissipation: PD
(Three device action)
• High collector current: IC
=3W @ T A =25° C
CASE STYLE SIP-8 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Ir
=-4A (Max.)
• High DC current gain:
hFE =2000 (Min.) @ VCE
.795 ± .008 ~
(20.2 ± 0.2)
.
(;533~)~
=-2V, IC =-1A
ARRAY CONFIGURATION
3
5
7
.059R
:j@rj@rJ15$1
maximum ratings (TA
j01.5)
.8
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VC80
D75FY4D
-80
-100
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA =25° C)
VE80
IC
ICM
18
-5
-4
-6
-0.4
Volts
A
PD
1.8
Watts
PD
3.0
Watts
TJ, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient
I R8JA
41.7
°CIW
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
h
260
°C
Collector Power Dissipation
(Three Device Action, TA =25° C)
Operating and Storage
Junction Temperature Range
A
thermal characteristics
635
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(Ic =-10mA, IB =0)
VBR(CEO)
-SO
-
-
Volts
Collector-Base Breakdown Voltage
(Ic =-1mA, IE =0)
VBR(CBO)
-100
-
-
Volts
ICBO
-
-
-20
p.A
ICEO
-
-
-20
p.A
lEBO
-
-
-2.5
rnA
2000
1000
-
-
-
-
CHARACTERISTIC
off characteristics
Collector Cutoff Current
(VCB =-100V, IE =0)
Collector Cutoff Current
(VCE =-SOV, IB =0)
Emitter Cutoff Current
(VEB =-5V, IC =)
on characteristics
DC Current Gain
(IC =-1A, VCE =-2V)
(Ic =-3A, VCE =-2V)
hFE
-
Collector-Emitter Saturation Voltage
(Ic =-3A, IB =-6mA)
VCE(sat)
-
-
-1.5
Volts
Base-Emitter Saturation Voltage
(Ic =-3A, IB =-6mA)
VBE(sat)
-
-
-2.0
Volts
switching characteristics
Turn-on Time
Fall Time
0.15
ton
VCC =-30V
IB1 =-IB2 = 6mA
Duty Cycle =1%
Storage Time
tst9
tf
-
O.SO
0.40
p's
-
CONDITION: NO HEAT SINK
OUTPUT
.....-1
182
I
IL'-'V~~IV\I_
____ _
m
NUMBERS OF ACTIONED CIRCUIT
f--H.?L--t---t--t-- ~~~I~~~I~
THREE CIRCUIT
FIG. 1 SWITCHING TIME TEST CIRCUIT
COLLECTOR POWER DISSIPATION Pc (WI
FIG. 2 POWER DISSIPATION VI.
JUNCTION TEMPERATURE
636
:rPc
~:::
3.OW
D76A3D
NPN POWER DARLINGTON
TRANSISTOR ARRAY
100 VOLTS
3 AMP, 4.0 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package (10 pin)
• High collector power dissipation: PD
=4W @ T A = 25°C
CASE STYLE SIP-10 PIN
(Four device action)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC = 3A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE
=2V, IC =1.5A
ARRAY CONFIGURATION
maximum ratings (TA = 25° C)
(unless otherwise specified)
RATING
Coliector~Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, T A = 25° C)
Collector Power Dissipation
(Four Device Action, TA = 25° C)
D76A3D
100
120
UNITS
Volts
Volts
VESO
IC
ICM
Is
6
3
6
0.5
Volts
A
PD
2.0
Watts
4.0
Watts
TJ, TSTG
-55 to +150
°c
l: R8JA
31.3
°C/W
TL
260
°c
PD
Operating and Storage
Junction Temperature Range
therm~1
SYMBOL
VCEO
VCSO
A
-
characteristics
Thermal ReSistance, Junction to Ambient
(Four Device Action)
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
637
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(lc = 10mA, Is = 0)
VSR(CEO)
100
-
-
Volts
Collector-Base Breakdown Voltage
(IC = 1mA, IE = 0)
VSR(CSO)
120
-
-
Volts
Collector Cutoff Current
(VCS = 120V, IE = 0)
ICSO
-
-
10
J.LA
Collector Cutoff Current
(VCE = 100V, Is = 0)
ICED
-
-
10
J.LA
Emitter Cutoff Current
(VES = 6V, Ic = 0)
IESO
-
-
2.5
mA
-
12000
CHARACTERISTIC
off characteristics
on characteristics
DC Current Gain
(Ic = 1.5A, VCE = 2V)
(Ic = 3A, VCE = 2V)
hFE
2000
1000
-
-
Collector-Emitter Saturation Voltage
(Ic = 1.5A, Is = 3mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(IC = 1.5A, Is = 3mA)
VSE(sat)
-
-
2.0
Volts
ton
-
0.3
-
2
-
0.4
-
switching characteristics
Turn-on Time
VCC = 30V
IS1 = -IS2 = 3mA
Duty Cycle = 1%
Storage Time
Fall Time
tstg
tf
J.Ls
CONDITION: NO HEAT SINK
H
~
OUTPUT
20"s
I-
'''~
IB1
~
~
,-------,
~ 4~--~~~----+----+----~--~--~
a
..--1
IB2
5r---~--~----+----+----r----r--~
i
-I
ffi
~ 3~;;:;;;;;~'
I
IL'-'I/'V\r4t-J\IV'v--4
____ _
II:
o
t;
~
m
2
I-----+-.;::::,-..:!:!
5o
°O~--~25~--~50~--~75----1~OO--~~~~--~1~
FIG. 1. SWITCHING TIME TEST CIRCUIT
AMBIENT TEMPERATURE Ta
FIG.2
638
=(OC)
TOTAL COLLECTOR POWER DISSIPATION
D76ASD
NPN POWER DARLINGTON
TRANSISTOR ARRAY
100 VOLTS
5 AMP, 4 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package (10 pin)
• High collector power dissipation: Po = 4W @ TA = 25°C
(Four device action)
CASE STYLE SIP-10 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC = 5A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = 3V, IC =3A
ARRAY CONFIGURATION
maximum ratings (TA =25°C)
(unless otherwise specifiec)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VCBO
D76A5D
100
100
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA =25° C)
VEBO
IC
ICM
IB
5
5
Volts
A
0.1
A
Po
2.0
Watts
Po
4.0
Watts
TJ, TSTG
-55 to +150
°C
I ROJA
31.3
°CIW
TL
260
°C
Collector Power Dissipation
(Four Device Action, TA =25°C)
Operating and Storage
Junction Temperature Range
8
thermal characteristics
Thermal Resistance, Junction to Ambient
(Four Device Action)
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
639
electrical characteristics (TA
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I
1 SYMBOL 1
MIN
TYP
MAX
UNIT
VaR(CEO)
100
-
-
Volts
ICEO
-
-
0.5
mA
Icao
-
-
200
J.l.A
IEao
-
-
2
mA
1000
1000
-
-
-
-
-
2
4
Volts
VaE(on)
-
-
2.5
Volts
ton
-
1.5
-
I·
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =30mA, la =0)
Collector Cutoff Current
(VCE =50V, la =0)
Collector Cutoff Current
(Vca =100V, IE =0)
Emitter Cutoff Current
(VEa =5V, Ic =0)
on characteristics
DC Current Gain
(Ic = .5A, VCE =3V)
(Ic =3a, VCE =3V)·
hFE
Collector-Emitter Saturation Voltage
(Ic =3A, la = 12mA)
(Ic =SA, la = 20mA)
VCE(sat)
Base-Emitter Voltage
(Ic =3V, la =3A)
switching characteristics
Turn-on Time
Fall Time
Ic =3A, la1 =-la2 =12mA
VaE(off) =-5V, RL =10.0
tf
8.5
OUTPUT
+--'
IB2
,
____ _
IL'-'V\"""'~V\r'"
m
FIG.1 SWITCHING TIME TEST CIRCUIT
640
J.l.s
NPN POWER DARLINGTON
D76FI2D
TRANSISTOR ARRAY
60 VOLTS
2 AMP, 4 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package (10 pin)
• Zener diode included between collector and base
CASE STYLE SIP-10 PIN
• High co.llector power dissipation: PD = 4W @ TA = 25°C
(Four device action)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC = 2A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE'= 2V, IC = 1A
ARRAY CONFIGURATION
3
5
7
9
:j§$I~I~IJtWI
maximum ratings(TA = 25°C)
000
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VCSO
D76FI2D
6O± 10
6O±10
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA = 25°C)
VESO
IC
ICM
Is
8
2
3
0.5
Volts
A
Po
2.0
Watts
Po
4.0
Watts
TJ,TSTG
-55 to +150
°C
R8JA
31.3
°C/W
TL
260
°C
Collector Power Dissipation
(Four Device Action, T A = 25° C)
Operating and Storage
Junction Temperature Range
A
thermal characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: %" from Case for 5 Seconds
641
electrical characteristics (TA = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(Ic = 10mA, Is = 0)
VSR(CEO)
50
60
70
Volts
Collector-Base Breakdown Voltage
(Ic = 10mA, IE = 0)
VSR(CSO)
50
60
70
Volts
Collector Cutoff Current
(VCS = 45V, IE = 0)
Icso
-
-
10
JJ.A
Collector Cutoff Current
(VCE = 45V, Is = 0)
ICEO
-
-
10
JJ.A
Emitter Cutoff Current
(VES = 8V, Ic = 0)
IESO
0.8
-
4.0
mA
2000
-
-
-
CHARACTERISTIC
off characteristics
on characteristics
DC Current Gain
(Ic = 1A, VCE = 2V)
hFE
Collector-Emitter Saturation Voltage
(Ic = 1A, Is = 1mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(IC = 1A, Is = 1mA)
VSE(sat)
-
-
2.0
Volts
ton
-
0.4
-
JJ.s
switching characteristics
Turn-on Time
Storage Time
Fall Time
VCC = 30V
IS1 = -IS2 = 1mA
Duty Cycle = 1%
tstg
tf
4.0
0.6
OUTPUT
..--1
162
I
IL'-'V'1I'Ir4""",,,1V'v--4I
____ _
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
642
D76FI3T
NPN POWER
TRANSISTOR ARRAY
60 VOLTS
3 AMP, 4.0 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package (10 pin)
• High collector power dissipation:
(Four device action)
Po =4.0W @ T A =25° C
CASE STYLE SIP-10 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC = ±3A (Max.)
• High DC current gain:
hFE = 500 (Min.) @ VCE = ±1V, IC = ±.4A
ARRAY CONFIGURATION
:3
5
7
9
::§J~~~olO
maximum ratings (TA = 25° C)
.059A
'iOf5i
8\0[
.0
5'
5'
-H-H
~~
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
Vcso
D76F13T
60
60
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA = 25° C)
VESO
IC
ICM
Is
6
3
5
0.5
Volts
Po
2.0
Watts
Po
4.0
Watts
TJ, TSTG
-55 to +150
°C
I R8JA
31.3
°C/W
TL
260
°C
Collector Power Dissipation
(Four Device Action, TA = 25°C)
Operating and Storage
Junction Temperature Range
A
A
thermal characteristics
Thermal Resistance, Junction to Ambient
(Four Device Action)
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
643
electrical characteristics (T A = 25° C)
(unless otherwise specified)
I
I SYMBOL I
MIN
TYP
MAX
Collector-Emitter Breakdown Voltage
(Ic = 10mA, IB = 0)
VBR(CEO)
60
-
Volts
Collector-Base Breakdown Voltage
(Ic = 1mA, IE = 0)
VBR(CBO)
60
-
-
Collector Cutoff Current
(VCB = 60V, IE = 0)
ICBO
-
-
10
p.A
Collector Cutoff Current
(VCE = 60V, IB = 0)
ICEO
-
10
p.A
Emitter Cutoff Current
(VEB = 6V, IC = 0)
lEBO
-
-
1
A
500
-
-
-
CHARACTERISTIC
UNIT
off characteristics
Volts
on characteristics
DC Current Gain
(Ic = 0.4A, VCE = 1V)
hFE
Collector-Emitter Saturation Voltage
(Ie = 2A, IB = 50mA)
VCE(sat)
-
-
1.0
Volts
Base-Emitter Saturation Voltage
(Ie = 2A, IB = 50mA)
VBE(Sat)
-
-
1.5
Volts
-
2.0
-
p's
5.0
-
2.0
-
switching characteristics
Turn-on Time
Vee = 30V
ton
Storage Time
IBl = -IB2 = SOmA
tstg
Fall Time
Duty Cycle =1%
tf
OUTPUT
r - - -r---....-O
INPUT
20jJS
t-t
IB1~IB2
I!!,. I
I
_I
IB2
L___ J
FIG. 1 SWITCHING TIME TEST CIRCUIT
D76FI4D
NPN POWER DARLINGTON
TRANSISTOR ARRAY
60 VOLTS
4 AMP, 4 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package (10 pin)
• High collector power dissipation: PD
(Four device action)
=4W @ TA =25° C
CASE STYLE SIP-10 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC =4A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = 2V, IC = 1A
ARRAY CONFIGURATION.
maximum ratings (TA = 25 0 C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VCBO
D76FI4D
60± 10
60± 10
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA =25°C)
VEBO
IC
ICM
IB
6
4
6
.5
Volts
A
PD
2.0
Watts
PD
4.0
Watts
TJ, TSTG
-55 to +150
°C
I ReJA
31.3
°C/W
TL
260
°C
Collector Power Dissipation
(Four Device Action, T A =25° C)
Operating and Storage
Junction Temperature Range
A
thermal characteristics
Thermal Resistance, Junction to Ambient
(Four Device Action)
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
645
electrical characteristics (TA
I
=25
0
C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(IC = 10mA, Ie = 0)
VeR(CEO)
50
60
70
Volts
Collector-Base Breakdown Voltage
(IC = 10mA, IE = 0)
VeR(CeO)
50
60
70
Volts
Collector Cutoff Current
(Vce = 45V, IE = 0)
Iceo
-
-
10
p,A
Collector Cutoff Current
(VCE = 45V, Ie = 0)
ICEO
-
-
10
p,A
Emitter Cutoff Current
(VEe = 6V, IC = 0)
IEeo
0.6
-
2.0
mA
CHARACTERISTIC
off characteristics
second breakdown
I
FBSOA
Second Breakdown with Base Foward Biased
SEE FIGURE 13
on characteristics
DC Current Gain
(IC = 1A, VCE = 2V)
(Ic = 3A, VCE = 2V)
hFE
2000
1000
-
15000
-
-
Collector-Emitter Saturation Voltage
(Ic = 3, Ie = 10mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(IC = 3A, Ie = 10mA)
VeE(sat)
-
-
2.0
Volts
ton
-
0.2
-
p,s
switching characteristics
Turn-on Time
VCC= 30V
le1 = -le2 = 10mA
Duty Cycle = 1%
Storage Time
Fall Time
tstg
tf
3.0
0.5
... 300
OUTPUT
201'5
~
g
9
I-
'8'~
~or:
4r----r--.A~~~---+----+---_+--~
200
B 3 r----r-H~--~"'F_---+---=;j;;;o._175 +---1
+--1
182 I
~
1'-'V~_I'I/'tw-4
L
____ _
~ 2r----H~~~~~---+----+---_+--~
8
m
°0~--~~--~2~--~--~4----~--~--~
FIG. 1 SWITCHING TIME TEST CIRCUIT
COLLECTOR-EMITTER VOLTAGE VCE (VI
FIG.2
646
IC - VCE
,
",
...
~
350
4
9
....z
~
200
w
9
....z
150
II:
II:
::>
300
II:
II:
::>
3
u
4
w
u
II:
e
275
3
II:
0
....
U
U
w
-'
-'
0
w
IB = 100"A
2
:l
0
u
2
IB= 250~
u
0 0
0~0------~L-------~2---------~------~4~------~-------7------~
2
COLLECTOR-EMITTER VOLTAGE VCE IV)
FIG. 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VC:;:E
FIG. 4
IC-VCE
30,000
COMMON EMITTER
Ta= 2S'C
20,000
10,000
~
8,000
";;:z
4,000
!Z'w"
2,000
::J
1,000
I'
()
()
. V/
~
~~(j
,,~
a:
a:
./
VL ~v
o
BOO
V
~
\
I.......
.\\
./
r-
IC=6A -
I'
--..
54_
\
3
2
~.3
0.1
\
~
V
300
a
0.06 0.08 0.1
0.2
0.4
0.6 0.8 1
6
8
a
10
0.1
0.2
0.4 0.6 O.B 1
COLLECTOR CURRENT IC (A)
FIG. 5
w
~
r-
"J-
25
200
400
18 - VCE
""'""
25
100-
4
0.4
0.6
O.B
~
1
p>-- :::--
_
-
O. B
0.6
O. 4
4
6
8
O.3
10
0.1
COLLECTOR CURRENT IC (A)
FIG. 7
-
Ta-5S'C
100
1
-- -
B
0.2
40 BO BO 100
IcJlB = 500
1 r-Ta = 55°C
0.1
4 6. 8 10
20
BASE CURRENT IB (mA)
COMMO~ EMITTER
COMMON EMITTER
IcJlB -500
6
2
FIG. 6
hFE - IC
w
.3
1\
\
"'
1
\\
L
400
I,
-~
\
1\
\
\
_1 \\
L
...-
L
600
-
V ./
I'
V !/
~~
./
\
1 1\
0.2
0.4
0.6
O.B
1
COL.LECTOR CURRENT IC (A)
VCE{sat) - IC
FIG. 8
647
V8E(sat) - IC
8
10
=
~
9
15or----.-----r----.----,r----.-----r-----r----.----,----~
III
rJl
I. 'I
1/'
- - COMMONiEMITTER
VCE 2V
4
&
w
e.
~- 1001----t----+---,
1/,
ffia:
w
a:
~
II / I
,,:1 ~/ fi/
a:
::J
o
I
a:
w
"',1
1'Z'
a:
"- ~
~
en
y
?;"'~C.
0.2
I-
'\b.
><-~@~w
a:e>
\
" "-
~ ~-
:!!
0
w,,:_
0
100
~ 0.1
o 0.08
80
d:~_
~ ~-
0
60
00
~ ~-
0.06
40
0.04
'SINGLE NON REPETITIVE PULSE Ta
oOen
a:
=25'C
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
0.4
20
0.6 O.B 1
40
60
BO
0.6
PULSE WIDTH Iw (mSECI
FIG. 12
6
O.B
B 10
20
40
80 BO 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
ICBO VERSUS tw
FIG. 13
648
SAFE OPERATING AREA
NPN/PNP
D76FY2D
POWER DARLINGTON
TRANSISTOR ARRAY
80 VOLTS
2 AMP, 4.0 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package (10 pin)
• Zener diode included between collector and base
• High collector power dissipation:
(Four device action)
Po =4.0W @ T A =25° C
CASE STYLE SIP-10 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC = ±2A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = +2V, IC = +1A
ARRAY CONFIGURATION
maximum ratings (TA
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VC80
D76FY2D
80
80
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA =25°C)
VE80
IC
ICM
18
8
2
3
0.5
Volts
A
PD
2.0
Watts
PD
4.0
Watts
TJ,TSTG
-55 to +150
°C
IR8JA
31.3
°C/W
TL
260
°C
Collector Power Dissipation
(Four Device Action, TA =25°C)
Operating and Storage
Junction Temperature Range
A
thermal characteristics
Thermal ReSistance, Junction to Ambient
(Four Device Action)
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
649
electrical characteristics (T A = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
Collector-Emitter Breakdown Voltage
(IC = 10mA. Is = 0)
VSR(CEO)
80
-
-
Volts
Collector-Base Breakdown Voltage
(Ic = 1mA. IE = 0)
VSR(CSO)
80
-
-
Volts
IcsO
-
-
10
p.A
ICEO
-
-
50
p.A
IESO
-
-
4
mA
-
-
-
CHARACTERISTIC
MAX
UNIT
off characteristics
Collector Cutoff Current
(VCS = 80V. IE = 0)
Collector Cutoff Current
(VCE = 80V, Is = 0)
Emitter Cutoff Current
(VES = 8V. IC = 0)
on characteristics
DC Current Gain
(IC = 1A. VCE = 1V)
hFE
2000
Collector-Emitter Saturation Voltage
(Ic = 1A. Is = 1mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(Ic = 1A. Is = 1mA)
VSE(sat)
-
-
2.0
Volts
ton
-
0.4
-
p's
switching characteristics
Turn-on Time
Storage Time
Fall Time
VCC = 30V
IS1 = -IS2 = 1mA
Duty Cycle = 1%
tstg
tf
OUTPUT
201'5
1++1
4.0
0.6
I-
"'~ +--,
182
I
ILWV\J\...tI~\I\I-""
____ _
m
FIG.1 SWITCHING TIME TEST CIRCUIT
650
D76FV2T
NPN POWER
TRANSISTOR ARRAY
80 VOLTS
2 AMP, 4.0 WATTS
Designed for switching applications, solenoid drive applications.
Features:
• Epoxy single-inline package (10 pin)
• High DC current gain: hFE
=500 (Min.) (lc =400mA)
• Low saturation voltage:
VCE(sat) = 0.5V (Max.) (lc = 300mA)
CASE STYLE SIP-10 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
ARRAY CONFIGURATION
3
5
7
9
::E¢ i§J ~ ~
maximum ratings (T A
010
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
D76FY2T
VCEO
VCSO
VESO
80
80
7
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ic
2
A
Base Current - Continuous
Is
0.5
A
Collector Power Dissipation
Po
4.0
Watts
TJ, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient
IR8JA
31.3
°CIW
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
h
260
°C
Operating and Storage
Junction Temperature Range
thermal characteristics
651
electrical characteristics (TA
I
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
VeR(CEO)
I
TVP
MAX
UNIT
80
-
-
Volts
Iceo
-
-
1
JAA
IEeO
-
-
1
JAA
hFE
500
-
-
-
Collector-Emitter Saturation Voltage
(Ic = 300mA, Ie = 1mA)
VCE(sat)
-
0.3
0.5
Volts
Base-Emitter Saturation Voltage
(Ic~ 300mA, Ie = 1mA)
VBE(sat)
-
-
1.1
Volts
ton
-
2.0
-
p's
CHARACTERISTIC
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =10mA, Ie =0)
Collector Cutoff Current
(Vce =80V, IE =0)
Emitter Cutoff Current
(VEe 7V, Ic 0)
=
=
on characteristics
DC Current Gain
(Ic 400mA, VCE
=
=1V)
switching characteristics
Turn-on Time
Vcc= 30V
le1 = -le2 = 1mA
Duty Cycle ~ 1%
Storage Time
Fall Time
-
tstg
tf
-
5.0
-
2.0
2.0
'., fAliI
v
IB2
I-
'''''oT--,\:N1
OUTPUT
1.6
~
~
\rH
IB2
COMMON EMITTER
TC= 25'C
.9
loon
~
~ ;'
",
~~
~ ~ ",.
~ I""'"
1.2
~
::I
o
a:
~ 0.8
::l
o
FIG. 1 SWITCHING TIME TEST CIRCUIT
o
0.4
o
~-
~
o
2
2.0
./
",
1~6
,. .....,
..
~
-
1.2
1
.-
"...
-
0.8
•
0.6
O~4
Ie = o.2 lmA
I..
0
4
6
8
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 2
652
IC - VCE
10
12
2.0
~§?
~ /-1 "'I
I-- t-- E
I-- t-
1.2
~
~
n II
~J
w
il
0.4
8
o
h
j
I/~
J 1/
J
rl V V v: U
~~
~
o
0.4
0.8
1.6
1.2
2.4
2.0
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG. 3
VCE - IC
FIG. 4 VCE - IC
2.0
COMMON EMITIER _
TC=-55'C
~
w
Cl
I--
~
...J
g
~
~
«
E
~
I-- .!P
"
1.2
0.8
a:
§. J~
J
0.4
v~
8
o
L. ~
o
I
-
~ 1.6
w
I
.. / .)/ ~/%
~
I
I
j
J
1
II~
I I II j
/ J J / / v
I
I
/ / I) '/ J
I / ) ) '/ /~ ~
J
I
~
~
./ ~ ~~ ~ ~ ~ ~
~
0.4
0.8
1.2
2.4
2.0
1.6
COLLECTOR CURRENT IC (A)
FIG. 5 VCE - IC
w
5000
I
3000
Tcl=l~.J
~
~
~
::::l
o
1000
500
~ .....
~
§?
f
"L
VI
~
::::l
-55
~~
a:
300
1,\
100
~~
~o
:,~
0.5
...~
0.3
. / l/
!
0.3
~
II
~ ~
~
a:
o
0.1
~
~>
-
\
g
0.03
C-;MMON EMITIER
IC/IB = 300
o
~
25
~
0.01
II-
~
z
~
""z
~
COMMON EMITIER
VCE= 1V
I I
0.1
0.05
0.D1
0.03
0.1
0.3
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
FIG. 6 hFE - IC
FIG. 7 VCE(sat) - IC
653
5
2.0
COMMON EMITTER Ielle = 300
-
I
...
I
I
I
I
COMMON EMITTER
I I I
I II
... VCE = 1V
w
III
>0
9
1.6
....
1==
~
Ir
Ir
TC=-55'C
1.2
~
Ir
~
100
j
0
0.1
[I
0.4
0.1
0.03
0.3
COLLECTOR CURRENT IC (A)
FIG. 8
I
V
o
2
II
II
0
0.Q1
I
I
0.8
..J
..J
U
w"
,..0
U
25
0.2
0.4
0.6
II
J
0.8
1.0
eASE-EMITTER VOLTAGE VeE (V)
VBE(sat) - Ie
FIG. 9 Ie • VBE
654
1.2
1.4
NPN/PNP
D76FY4D
POWER DARLINGTON
TRANSISTOR ARRAY
80 VOLTS
4 AMP, 4.0 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package (10 pin)
• High collector power dissipation: Po = 4.0W @ T A = 25° C
(Four device action)
CASE STYLE SIP-10 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector current: IC = ±4A (Max.)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = ±2V, IC = ±1A
ARRAY CONFIGURATION
::§bIJ@I1T5$lml
maximum ratings (TA
010
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VCBO
D76FY4D
80
100
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Collector Power Dissipation
(One Device Action, TA =25° C)
VEBO
Ic
ICM
IB
5
4
Volts
A
0.4
A
Po
2.0
Watts
Po
4.0
Watts
TJ,TSTG
-55 to +150
I ROJA
31.3
°CIW
TL
260
°C
Collector Power Dissipation
(Four Device Action, T A =25° C)
Operating and Storage
Junction Temperature Range
6
°C'
thermal characteristics
Thermal Resistance, Junction to Ambient
(Four Device Action)
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
655
electrical characteristics (TA
I
=25
0
C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
(Ic = 10mA, Is = 0)
VSR(CEO)
80
-
-
Volts
Collector-Base Breakdown Voltage
(Ic = 1mA, IE = 0)
VSR(CSO)
100
-
-
Volts
CHARACTERISTIC
off characteristics
Collector Cutoff Current
(VCS = 100V, IE = 0)
IcsO
-
-
20
J.LA
Collector Cutoff Current
(VCE = 80V, Is = 0)
ICED
-
-
20
J.LA
Emitter Cutoff Current
(VES = 5V, Ic = 0)
IESO
-
-
2.5
mA
2000
1000
-
-
-
hFE(2)
Collector-Emitter Saturation Voltage
(Ic = 3A, Is = 6mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(Ic = 3A, Is = 6mA)
VSE(sat)
-
-
2.0
Volts
ton
-
0.2
J.Ls
1.5
-
0.6
-
on characteristics
DC Current Gain
(IC = 1A, VCE = 2V)
(Ic = 3A, VCE = 2V)
hFE(1)
-
switching characteristics
Turn-on Time
Storage Time
Fall Time
Vcc = 30V
IS1 = -IS2 = 6mA
Duty Cycle = 1%
tstg
tf
OUTPUT
...-1
IB2 I
1,""",.J\.-4I~V\.-_
L
____ _
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
656
D78A3D1
NPN POWER DARLINGTON
TRANSISTOR ARRAY
100 VOLTS
3 AMP, 25 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
• Epoxy single-inline package with heat sink (12 pin)
CASE STYLE SIP-12 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector power dissipation: Po = 25W @ TA = 25°C
(Four device action)
• High collector current: IC = 3A (Max.)
,039A
Toil
.126Dia
(03.2)
• High DC current gain:
hFE = 2000 (Min.) @ VCE = 2V, IC = 1.5A
,100
(2,54)
ARRAY CONFIGURATION
3
2
9
4
=25
0
"
L----~_
60-----4------'
maximum ratings (TA
10
C)
_o7
(unless otherwise specified)
D78A3D1
100
120
UNITS
Volts
Volts
6
Volts
A
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VC80
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Maximum Forward Current
Surge Current (1 sec)
VE80
Ic
ICM
18
IFM
IFSM
VR
6
A
A
A
100
A
Po
3.0
Watts
Po
5.0
25
Watts
Visol
1000
Volts
TJ,TSTG
-55 to +150
°C
Reverse Voltage
Collector Power Dissipation
(One Device Action, TA = 25° C)
Collector Power Dissipation
(Four Device Action)
TA,25°C
Tc = 25°C
Isolation Voltage
(Between Fin to 1 -12 pin)
Operating and Storage
Junction Temperature Range
657
3
6
0.5
3
thermal characteristics
R8JC
5
°CIW
Thermal Resistance, Junction to Ambient
R8JA
25
°CIW
Maximum Lead Temperature for Soldering
Purpose: %" from Case for 5 Seconds
TL
260
. °C
Thermal Resistance, Junction to Case
electrical characteristics (TA = 25 0 C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
VSR(CEO)
100
-
-
Volts
VSR(CSO)
120
-
-
Volts
Icso
-
-
10
p.A
Collector Cutoff Current
(VCE = 100V, Is = 0)
ICEO
-
-
10
p.A
Emitter Cutoff Current
(VEB = 6V, IC = 0)
IESO
0.5
-
2.5
mA
CHARACTERISTIC
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 10mA, Is = 0)
Collector-Base Breakdown Voltage
(Ic = 1mA, IE = 0)
Collector Cutoff Current
(VCS = 120V, IE = 0)
second breakdown
I Second Breakdown with Base Foward Biased
SEE FIGURE 13
FBSOA
on characteristics
DC Current Gain
(Ic = 1.5A, VCE = 2V)
(Ic = 3A, VCE = 2V)
hFE
2000
1000
-
12000
-
-
-
Collector-Emitter Saturation Voltage
(Ic = 1.5A, Is = 3mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(Ic = 1.5A, Is = 3mA)
VSE(sat)
-
-
2.0
Volts
ton
-
0.3
tstg
-
2
tf
-
0.4
-
switching characteristics
Turn-on Time
VCC = 30V
IS1 = -IS2 =3mA
Duty Cycle =1%
Storage Time
Fall Time
COMMON EMITTER
p's
700
600
TA = 25'C
~--~--~----+----+-=~~~~-~
OUTPUT
201'8
\+-+I
I-
'B1~
..-1
182
I
IL'-'V'1I\ro4~1V'v
____ ___
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG.2 IC - VCE
658
COMMON EMITTER
TA =100°C
f!:
SOD
500
400
4
9
600
550
SOO
4S0
!zw
350
w
a:
200
:>
3
;
2
U
300
a:
0
2
0
4
.!z
300
a:
a:
:> 3
u
a:
!;
w
....
....
400
f!:
9
0
u
Ie = 25O.A
u
oOL-----~======2~=====3~=====4~====:bS======~-----l
°0~~==~====~======~====~4======~====~~--~
COLLECTOR·EMITTER VOLTAGE VeE (V)
COLLECTOR·EMITTER VOLTAGE VCE (V)
FIG.4
FIG.3 IC - VCE
IC - VCE
20000
\
JOJMON EMIT)ER
VCE = 2V
V-./
10000
~
;;:
,;'
V V
v L
,~
,/ V
~,.,,/
4000
"!z
w
c:
a:
u
u
2000
"
i"'"
./
6000
Z
1000
.,;'
800
\
\\1\
\ 1\\
./
\
\
\ \\
/'
/ /7
C
\
\.
"
.......
--
.4
.S
FIG. 5
.8
3_
1
0.1-
0.2
2
0.4 0.6 0.81
10
I--
4
10
20
40
60 80 100
200
400
eASE CURRENT Ie (rnA)
10
iE:
COJMON EMITTE'R
Iclle = 500
COMMO~ EMITTER
IClle" SOD
!
w
'"
"~
>
w
~
z
~c:
"!.
I
\ ........
~
./
SOD
iE:
Ta = 25°C
\
\
,... ~
"
co'M~O~ EMITiER
\
\
100-
0.4
0.2
>
Z
0
../V
0.4
O.S
0.8
1
:::>
25
!.<
en
100
c:
w
I:
0.8
:l:
0.6
'"
0.4
:l
--
~
--
.-
~
2
8
10
0.1
COLLECTOR CURRENT IC (A)
FIG. 7
Ta = 55°C
~c:
...... ~
25
0.1
0
0.2
0.4
0.6
0.8
1
COLLECTOR CURRENT IC (A)
VCE(sat) - IC
FIe;;. 8 VBE(sat) - IC
659
8
10
PI
t-- COMMONIEMITTER
11 IL
11
VCE=2V
i§
o
~
:l
8
....~
w
0
ill
2
1
/
L
0
0.5
iii0:
ffi
4
~
...i!:z
~
w
(ij
Z
...<
0:
IL
0.1
1.5
2.0
2.5
0.001
3.0
0.1
0.01
BASE-EMITTER VOLTAGE VBE (V)
FIG. 9
........
I""
<
:::E
/ I
1.0
1
2
3
~ F'"
10
....
/ / I
/
I
/ / I
L
=
-
CURVES SHOULD B_E_APPUED IN THERMAL LlMITEu AREA
(SINGLE NONREPETITIVE PULSE. NO HEAT SINK)
1. ONE CIRCUIT ACTION
2. TWO CIRCUIT ACTION
3. THREE CIRCUIT ACTION
4. FOUR CIRCUIT ACTION
:::::
~
iiii
.::'1 ~ If!L
3
100
~
//1
},} 4
-
10
100
1000
PULSE WIDTH Iw (SEC)
FIG. 10 rth - tw
Ie - VBE
150r---'---~---;r---'---~----r----r~-.----r---'
NUMBERS OF ACTIONED CIRCUIT I Pc
ONE CIRCUIT
3W
~--b~~~-+--t-- TWO CIRCUIT
4.2W
THREE CIRCUIT
FOUR CIRCUIT
2
4.5W
5.OW
5
3
COLLECTOR POWER DISSIPATION Pc (W)
FIG. 11
10
8
IC MAX. (PULSED)'
6
4
~I\\
~~~r- ~h
ICMAX.
(CONTINUOUS)
g
0.
~~
'C.;.~
''It,
},} 0.6
0.6
~ 0.4
i
O
~
~ '"
J
U
O~/O~
7J.voo~
"I07'/oN
~
TOES Acrl N
o
o
25
50
75
125
0.04
150
175
!=
~~-
0 ..
'SINGLE NONREPETITIVE PULSE TC = 25"C
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
0.6
2
4
8
8 10
20
40
80 80100
FIG. 13 SAFE OPERATING AREA
660
~~-
i1jg
~§00:
COLLECTOR-EMITTER VOLTAGE Vee (V)
Pc - Ta
~-
W
~
0.6
AMBIENT TEMPERATURE Ta = ('C)
FIG.12
~
O. 1
0.06
~
100
~
0.2
0
SAOTION
FO
UROEV
1\
8 .06
10~S
~=
g-
-.:'I
~
13
0:
0
'
1\
D78A3D2
NPN POWER DARLINGTON
TRANSISTOR ARRAY
100 VOLTS
3 AMP, 25 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
CASE STYLE SIP-12 PIN
• Epoxy single-inline package with heat sink (12 pin)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• High collector power dissipation: PD = 25W @ TA = 25° C
(Four device action)
.039R
• High collector current: IC = 3A (Max.)
(Off"""
.126 Cia
(03.2)
• High DC current gain: hFE = 2000 (Min.) @ VCE = 2V,
IC = 1.5A
.100
(2.54)
ARRAY CONFIGURATION
maximum ratings (TA = 25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
VCEO
VCBO
D78A3D2
100
120
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Maximum Forward Current
Surge Current (1 sec)
VEBO
Ic
ICM
IB
IFM
IFSM
VA
6
Volts
A
6
A
A
A
100
A
Po
3.0
Watts
Po
5.0
25
Watts
Visol
1000
Volts
TJ, TSTG
-55 to +150
°C
Reverse Voltage
Collector Power Dissipation
(One Device Action, TA =25° C)
Collector Power Dissipation
(Four Device Action)
TA =25°C
Tc =25°C
Isolation Voltage
(Between Fin to 1 -12 pin)
Operating and Storage
Junction Temperature Range
661
3
6
0.5
3
thermal characteristics
Thermal Resistance, Junction to Case
R8JC
5
°CIW
Thermal Resistance, Junction to Ambient
R8JA
25
°elW
Maximum Lead Temperature for Soldering
Purpose: %" from Case for 5 Seconds
TL
260
°C
electrical characteristics (Tc
I
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
Collector-Emitter Breakdown Voltage
(IC = 10mA, Ie = 0)
VeR(CEO)
Collector-Base Breakdown Voltage
(Ic = 1mA, IE = 0)
VeR(CeO)
CHARACTERISTIC
I
TYP
MAX
UNIT
100
-
Volts
120
10
IJ.A
off characteristics
Collector Cutoff Current
(Vce = 120V, IE = 0)
Iceo
-
-
Collector Cutoff Current
(VCE = 100V, Ie = 0)
ICEO
-
-
10
IlA
Emitter Cutoff Current
(VEe = 6V, IC = 0)
IEeo
0.5
-
2.5
mA
Volts
second breakdown
I Second Breakdown with Base Foward Biased
FBSOA
SEE FIGURE 13
on characteristics
DC Current Gain
(Ic = 1.5A, VCE = 2V)
(Ic = 3A, VCE = 2V)
hFE
2000
1000
-
12000
-
-
-
Collector-Emitter Saturation Voltage
(IC = 1.5A, Ie = 3mA)
VCE(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(Ic = 1.5A, Ie = 3mA)
VeE(Sat)
-
-
2.0
Volts
ton
-
0.3
-
,-,s
switching characteristics
Turn-on Time
VCC = 30V
le1 = -le2 = 3mA
Duty Cycle = 1%
Storage Time
Fall Time
tstg
tf
-
2
0.4
-
6r---.----,----,---~----~--_r--~
OUTPUT
20l'S
1++1
I-
I.'~
...--1
182
I
IL~V\r<-t/VI;
____ _......
m
O~O~~----~2----~3----~4----~5----~--~
FIG. 1 SWITCHING TIME TEST CIRCUIT
COUECTOR-EliITTER VOLTAGE VCE (V)
FIG. 2
662
IC - VCE
COMMON EMITTER
TA = l00'C
600
560
500
450
600
500
400
~
.
~
9
z
300
..z
:>
200
:>
!} 4
w
a:
a:
"a:
~
"......w
0
3
400
4
350
w
a:
a:
"a:0
t;
......w
0
"
2
"
300
3
Ie = 260.A
2
00~~==d:====~======~====d4======~====~~--~
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC-VCE
FIG. 4
20000
\
JOJMON EMIT)ER
VeE" 2V
v----
10000
w
~
./
./
6000
z
~
4000
./
v. V
2000
\
I"
V
g
1000
\.
_\\I~
\)\\
./
600
~
\ \\
~
r-.
-
,
\
1\
1\
~
\
I'
n--\
V/.,- ~
lJ
,
\
~
V V
~-' ...~' / /
!$f
~a:
§
Co
./
IC - VCE
1"-
""'" r-.
COMMON EMITTER
Ta = 25 C1 C
I
1\
- "'"
r-
IC=6A
I-
5
4
3
2
1
"0.10.5
./
600
V
400
.2
.06 0.1
.6
.4
.6
1
0.1
10
0.2
0.4 0.6 0.81
10
20
40
6060.100
200
.400
BASE CURRENT IB (mA)
COLLECTOR CURRENT IC (A)
FIG. 5
~
FIG. 6
hFE - IC
10
10
!
w
-
W
COJMON
lellB = 500
EMITT~R
~
z
0
~
a:
::>
rn
a:
w
~
lJ
-T.
-55'C
-
0.6
25
0.6
W
C!l
;!
..J
§Z
100-
~
0
0.2
0.4
0.6
I:
r--p -
I"'""
100
6
10
0.8
51
w
0.6
'"
0.4
\(
0.4
0.1
~
Z
l../V
\(
0
>
~
>
...~...
ICIIB = 500
<,,0.
~I~
II I I
ICMAX.
(CONTINUOUS)
g
~ 10-
IC MAX. (PULSED)'
"
r:::-,l' 1\
~ ~
~~
O. 1
0 .08
8
.
iii
z
C\
1\
0.04
0.1
0.001
0,01
0.1
10
100
FIG. 12
O::(lI
~~-
~~-
~~-
~~-
0.8
6
FIG.13
664
~-
C,)ID
810
20
40
80 80 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
rth - tw
@-
.
00::
'SINGLE NONREPETITIVE PULSE TC • 25·C
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
0.6
1000
PULSE WIDTH tw (SEC)
~-
t> 8-
0.06
a:
I-
>i-
SAFE OPERATING AREA
NPN/PNP
D78FY4D
POWER DARLINGTON
TRANSISTOR ARRAY
80 VOLTS
4 AMP, 25 WATTS
Designed for high power switching applications, hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High reliability small-sized available (4 in 1)
CASE STYLE SIP-12 PIN
• Epoxy single-in line package with heat sink (12 pin)
• High collector power dissipation:
(Four device action)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Po =5W @TA =25°C
~
• High collector current: Ie = ±4A (Max.)
(011
.1260ia
(03.21
• High DC current gain:
hFE = 2000 (Min.) @ VeE = +2V, Ie = ±1A
.100
(2.541
ARRAY CONFIGURATION
j~}1 JT5i$1 ~rtEkl.7
maximum ratings (TA
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter BaSe Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Maximum Forward Current
Surge Current (1 sec)
Reverse Voltage
Collector Power Dissipation
(One Device Action, TA =25°C)
Collector Power Dissipation
(Four Device Action)
Isolation Voltage
(Between Fin to 1 -12 pin)
Operating and Storage
Junction Temperature Range
TA,25°C
TC =25°C'
665
SYMBOL
VCEO
VC80
VE80
Ic
ICM
18
IFM
IFSM
VR
D78FY4D
80
100
5
4
0.4
3
6
80
A
A
A
A
Po
3.0
Watts
Po
5.0
25
Watts
Visol
1000
Volts
TJ. TSTG
-55 to +150
°C
6
UNITS
Volts
Volts
Volts
A
thermal characteristics
Thermal Resistance, Junction to Case
(Four Device Action)
1: ReJC
5.0
°CIW
Thermal Resistance, Junction to Ambient
(Four Device Action)
1: ReJA
25
°elW
TL
260
°C
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
electrical characteristics (T c = 25 0 C)
I
CHARACTERISTIC
(unless otherwise specified)
I SYMBOL I
MIN
Collector-Emitter Breakdown Voltage
(IC = 10mA, Ie = 0)
VeR(CeO)
Collector-Base Breakdown Voltage
(Ic = 1mA, Ie = 0)
I
TYP
MAX
UNIT
80
-
-
Volts
VeR(CeO)
100
-
Volts
Collector Cutoff Current
(Vce = 100V, Ie = 0)
Iceo
-
-
20
p,A
Collector Cutoff Current
(VCE= 80V, Ie = 0)
Iceo
-
-
20
p,A
Emitter Cutoff Current
(Vee = 5V, Ic = 0)
leeo
-
-
2.5
mA
2000
1000
-
-
-
off characteristics
on characteristics
DC Current Gain
(IC = 1A, Vce = 2V)
(Ic = 3A, Vce = 2V)
hFE
Collector-Emitter Saturation Voltage
(IC = 3A, Ie = 6mA)
Vce(sat)
-
-
1.5
Volts
Base-Emitter Saturation Voltage
(IC = 3A, Ie = 6mA)
Vee(sat)
-
-
2.0
Volts
ton
-
0.2
-
p,s
switching characteristics
Turn-on Time
Storage Time
Fall Time
Vcc = 30V
le1 = -le2 = 6mA
Duty Cycle = 1%
tstg
tf
OUTPUT
~I
IS2
I
____ _
IL,""",1V4'-'VV'Y-~
m
FIG. 1 SWITCHING TIME TEST CIRCUIT
666
1.5
0.6
HIGH SPEED
GE10000GE10009
NPN POWER DARLINGTON
TRANSISTORS
500 VOLTS
10-20 AMPS, 175 WATTS
These devices are designed for use in high speed switching
applications, such as off-line switching power supplies, AC &
DC motor control, UPS systems, ultrasonic equipment and
other high frequency power conversion equipment.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
GE10000 THRU GE10003
r:
0.845121 471
GE 10004 THRU GE10009
MAX
::l~'35819'091 MAX
0~~1x65l~
T
0043(1091
0.03810971
--u--u=
L
-l r
OlA.-J
SEATING PLANE
426(10.82) MIN
CASE TEMP
REFERENCE
POINT
.2015.00)
DEVICE CIRCUIT
0.162(4,09)
o 15f3,84)
2 HOLES
0440111.18)
0420(1067)
absolute maximum ratings (25 0 C)
(unless otherwise specified)
Voltages
VCEO(SUS)
VCEX, (TC
= 100°C)
VCEV
VEBO
Currents
IC
ICM
IB
IBM
Power DIssipation
PO(TC = 25°C)
Po(Tc = 100°C)
Derate above 25° C
Temperatures
Tstg and TJ
TLI
Thermal Resistance
GE
GE
GE
GE
GE
GE
GE
GE
10000
10001
10002
10003
10004
10005
10006
10007
10008
10009
350
400
450
8
400
450
500
8
350
400
450
8
400
450
500
8
350
400
450
8
400
450
500
8
350
400
450
8
400
450
500
8
450
450
650
8
500
500
700
8
20
30
2.5
5.0
20
30
2.5
5.0
10
20
2.5
5.0
10
20
2.5
5.0
20
30
2.5
5.0
20
30
2.5
5.0
10
20
2.5
5.0
10
20
2.5
5.0
20
30
2.5
5.0
20
30
2.5
5.0
Amps
Amps
Amps
Amps
175
100
1.0
175
100
1.0
150
85
.86
150
85
.86
175
100
1.0
175
100
1.0
150
85
.86
150
85
.86
175
100
1.0
175
100
1.0
Watts
Watts
W/oC
-65 to
+200
+275
1.0
-65 to
+200
+275
1.17
-65 to
+200
+275
1.17
-65 to
+200
+275
1.0
-65 to
+2QO
+275
1.0
-65 to
+200
+275
1.17
-65 to
+200
+275
1.17
-65 to
+200
+275
1.0
-65 to
+200
+275
1.0
1) Max. Lead Temperature for soldering purposes 1/8" from case for 5 seconds.
667
GE
GE
Units
Volts
Volts
Volts
-65 to
°C
+200
+275
°C
1.0 °C/Watt
device electrical characteristics
(Test Conditions in Next Section; TC = 25°C Except as Notes)
(1) VCEO(SUS)
(2) VCEX(SUS),
(TC = 100°C)
(3) VCEX(SUS),
(TC = 100°C)
GE
GE
GE
GE
10001
10002
10003
10004
10005
10006
10007
10008
10009
Units
350
400
350
400
350
400
350
400
450
500
Volts
400
450
400
450
400
450
400
450
450
500
Volts
295
2.5
345
315
345
2.5
365
2.5
295
2.5
345
2.5
Volts
2.5
295
2.5
315
5.0
2.5
5.0
365
2.5
5.0
5.0
5.0
5.0
5.0
5.0
200
16
5.0
5.0
200
16
200
16
5.0
200
17
5.0
5.0
200
15
5.0
200
15
5.0
5.0
GE
10000
Min.
Min.
STATIC
5.0
200
15
5.0
200
15
50
600
Min.
Max.
Max.
(10) VCE(SAT)
(11) VCElSAT)
(12) VCE(SAT),
(Tr. = 100°C)
(13) VBE(SAT)
VBE(SAT),
(Tc = 100°C)
(14) DIODE VF
GE
GE
GE
Min.
Max.
(4) 'CEV
'CEV, (Tc = 150°C) Max.
(5) ICER, (Tc= 100°C) Max.
Max.
(6) lEBO
See Figure
(7) Islb
Min.
(8) hFE
Max.
(9) hFE
-
GE
GE
5.0
5.0
2.5
40
500
50
600
50
600
40
500
40
500
40
400
40
400
1.9
50
600
40
400
1.9
200
16
40
500
30
300
1.9
30
300
1.9
40
400
1.9
40
400
1.9
30
300
1.9
30
300
2.0
Max.
3.0
3.0
2.9
2.9
3.0
3.0
30
300
1.9
2.9
2.9
Max.
Max.
2.0
2.0
2.5
2.0
2.5
2.0
2.5
2.0
2.5
2.5
2.0
2.5
2.0
2.5
Max.
Typ.
Max.
2.5
1.95
5.0
2.5
1.95
5.0
2.5
2.5
1.5
5.0
2.5
1.95
5.0
2.5
2.5
1.5
5.0
1.95
5.0
175
175
175
175
175
325
325
325
325
.045
.200
.045
.200
.23
.60
1.7
3.5
.85
2.4
.23
.60
4.4
6.5
.045
.200
.14
.40
1.5
3.0
.40
1.5
4.2
6.0
.54
1.5
1.7
3.0
DYNAMIC
Output Capacitance Typ.
(VCB = 10V, IE = 0,
Max.
tTEST = 1MHz)
SWITCHING
(1) Resistive
t(j
Typ.
Max.
Typ.
tr
Max.
Typ.
ts
Max.
Typ.
tf
Max.
(2) Inductive
Typ.
ts
Max.
(TC = 100°C)
Typ.
tf
Max.
Typ.
te
Max.
(3) Inductive
Typ.
ts
Typ.
tf
Typ.
te
4.4
6.5
.54
1.5
1.7
3.0
2.2
1.7
3.5
.85
2.4
200
17
40
400
rnA
rnA
rnA
rnA
3.5
30
300
2.0
3.5
Volts
Volts
2.0
2.5
2.5
2.5
2.5
2.5
Volts
2.5
1.5
5.0
2.5
2.5
Volts
1.5
5.0
1.95
5.0
1.95
5.0
Volts
Volts
175
175
175
175
175
pF
325
325
325
325
325
325
pF
.045
.200
.045
.200
.045
.200
.045
.200
.04
.25
.04
.25
~s
~s
.14
.40
1.5
3.0
.40
1.5
.22
.60
.22
.60
1.2
1.5
.11
.40
1.3
1.5
.15
.50
.045
.200
.11
.40
1.3
1.5
.15
.50
.18
1.0
.18
1.0
~s
~s
1.2
2.0
.20
.60
1.2
2.0
.20
.60
~s
~s
2.9
4.0
.19
1.0
.62
1.5
3.0
4.0
3.0
4.0
.20
1.0
~s
~s
.39
1.5
1.0
2.5
4.2
6.0
.39
1.5
1.0
2.5
.60
1.5
~s
~s
1.2
1.5
.25
.50
.25
.50
2.9
4.0
3.2
4.0
.19
1.0
.62
1.5
.18
1.0
.46
1.5
3.2
4.0
.18
1.0
.46
1.5
1.5
.10
1.5
.10
1.5
~
.10
.10
~s
.22
.22
.30
.30
~s
2.2
2.0
2.0
1.5
1.5
.30
.30
1.0
.20
.50
.10
1.0
.20
.50
.10
.30
.30
Volts
.20
1.0
.60
1.5
1.5
~
~s
~s
~s
STATIC TEST CONDITIONS·
(1) VCEX(SUS)
a) Ie = 250mA, Ie = 0,
VCLAMP = VeEO Rated
b) Ic = l00mA, Ie = 0,
VCLAMP = VCEO Rated
APPLIES TO
GE10000 Thru
GE10007
GE10008,9
(2) VCEX(SUS)
a) IC=2A,
VCLAMP = VCEX Rated
b) Ic= lA,
VCLAMP = VCEX Rated
APPLIES TO
GE10000, 1,4,5,8,9
(3) VCEX(SUS)
a) Ic= lOA,
VCLAMP = VCEX Rated
b) Ic=5A,
VCLAMP = VCEX Rated
APPLIES TO
GE10000, 1,4,5,8,9
(4) ICEV
VCEV = Rated Valve,
VeE = 1.5V
GE10002,3, 6, 7
GE10002, 3, 6, 7
APPLIES TO
All
(5) ICER
VCE = Rated Valve, ReE = 50n
(6) IEeo
APPLIES TO
All
APPLIES TO
GE10000, 1, 2, 3
GE10004, 5, 6, 7, 8, 9
VEe = BV, Ic = 0
VEe = 2V, Ie = 0
(7) Islb SEE APPROPRIATE FORWARD BIAS
SECOND BREAKDOWN FIGURE
(8) hFE
(a) Ic = SA, VCE = 5V
(b) Ic = 2.5A, VCE = 5V
APPLIES TO
GE10000, 1, 4, 5, 8, 9
GE10002, 3, 6, 7
(9) hFE
Ic = lOA, VCE = 5V
Ic = 5A, VCE = 5V
APPLIES TO
GE10000, 4, 5, 8, 9
GE10002, 3, 6, 7
(10) VCE(SAT)
a) Ic = lOA, Ie = .4A
b) IC = SA, Ie = .25A
c) Ic = SA, Ie = .5A
APPLIES TO
GE10000, 1, 4, 5
GE10002, 3, 6, 7
GE1000B,9
668
(11) VCE(SAT)
a) Ic = 2OA, Ie = lA
b) Ic = lOA, Ie = lA
c) Ic = 2OA, Ie = 2A
APPLIES TO
GE10000, 1, 4, 5
.GE10002, 3, 6, 7
GE1000B,9
(12) VCE(SAT)
SAME AS (10) BUT Tc = l00·C
(13) VeE(SAT)
a) Ic = lOA, Ie = .4A
b) Ic = 5A, Ie = .25A
c) Ic = lOA, Ie = .5A
(14) DIODE VF
a) IF = lOA
b) IF= SA
APPLIES TO
GE10000, 1,4,5
GE10002, 3, 6, 7
GE10008,9
APPLIES TO
GE10000, 4, 5, 8, 9
GE10002, 3, 6, 7
SWITCHING TEST CONDITIONS
(1) RESISTIVE
Vee=250V, tp=50"s, Duty s; 2%
a) Ie = lOA, IBI = .4A,
APPLIES TO
GE10000, 1,4, 5
(2) INDUCTIVE
APPLIES TO
(3) INDUCTIVE
VeLAMP = 250V, L = 100"h, Te = 100°C
SAME AS (2), BUT Te = 25° C
a) Ie = lOA, IBI = .4A,
GEl 0000, 1,4,5
NOTE: See FIGURE 24 for Switching Time
IB2 = 1.6A
Test Circuil.
b) Ie = 5A, IB = .25A,
GE10002, 3, 6, 7
IB2 = lA
c) Ie = lOA, IB = .5A,
GE10008,9
IB2 = 2A
IB2 = 1.6A
b) Ie = 5A, IBI = .25A,
GE10002, 3, 6, 7
IB2= lA
c) Ie = lOA, IBI = .5A,
IB2 = 2A
GEl 0008, 9
TYPICAL CHARACTERISTICS
TJ.t5~...... ~
~ 100
CI
~/V
....
15
I
VCE' 5V
ALL DEVICES
r-~
TJ=2S 0 C
~
~
UI
!J
g, 101---+++H-~++H--~--IH-+*++H--r_~~rrrrM
ffi 91---+++H-+i++H---+~H-+~+H--t_++r+rHH
~ 81----++-I-tr+i~H---+~\~-+~+H--t_+;_r+rHH
~ 71----++-I-tr++t+H---+~\~_++ttH--t_+;_r+rHH
~ 61----++-I-ir+++tH--_+-\~;_t+~H_-_+~~_I_trHH
u
'\.
~\ \.
/TJ'25°C
a
u
\\ \
\\
c,
~
..J
\
~
~
~
~1
10
S
Ic ,COLLECTOR CURRENT- AMPERES
30
5~-++~~~~H---+~~-+++~--~~~r+~H
\
Ic·3DA
8
\
10
I
1---+++I+#++H---4--1H4III-+++1 ALL DEVICES ,EXCEPT
1---++-I--I-1I-+-I++tl---R-+++++I+I OMIT IC'30A CURVE
FOR GEI0002,3,6,7
.41----++-I-~+++tH---+-~~~~~-r_+;_r+trH
w 3~~~;_~~~T7~~-I-\~Icr'r20rAn+~~~-t_r+++HH
~
IVc'5A i'!c· IOA
Ic·IA
.......
r-
2~~I~~~Nl~1~~~~~*W~~ii~1
I
I I III
I
\
FIGURE 1. DC CURRENT GAIN (VeE = 5V)
10
0.1
1.0
Ia,BASE CURRENT- AMPERES
.01
FIGURE 2. COLLECTOR SATURATION REGION
10
~,=2S
/3,=10
GE10000,I,4,5
GE10002,3,6,7,8,9
I
IL
TJ =2S·C
TJ=IOO·C
1.0
V
~
TJ=ISO·C\.
g,
II:
....
....
V/
~,
II:
~
~
,
UI
!J
II
UI
!J
TJ'IOO°C~
~
I::
::IE
~ 1.0
II:
o
~'2S·C
....
II:
~
U
IIJ
..J
..J
TJ =150·C
~o
o
,
U
..
u.
i=
~
en
'j;j'
c
~
O. I
0.10
I
FIGURE 3. VeE
~T,.J"
;
g
.:: 1.0
:x::-- ~
TJ'150·C
~
(SAT)
S
10
Ic,COLLECTOR CURRENT-AMPERES
20
30
FIGURE 4. Ie COLLECTOR CURRENT (AMPERES)
VS Ie
...-!!!J
I_TJ.IOOOC
UI
!J
I
S
10
20
30
Ic,COLLECTOR CURRENT-AMPERES
-
~
TJ=2S·C
TJ=IOO·C
UI
!J
o
>,
ffi....
....
....i
!::
....::IE,
....
1.0
~
::;:;.- ~
TJ=150·C
I
IIJ
i
UI
~
I
I
i
..5
J
.;:
O. I
I
.'
GE 10000,1,4,5
GE 10002,3,6,7,8,9
~,=2S
~,=IO
5
10
20
Ie,COLLECTOR CURRENT-AMPERES
FIGURE 5. VBE
(SAT)
o.I
30
VS Ie
5
10
20
Ic,COLLECTOR CURRENT-AMPERES
FIGURE 6. VBE
669
(SAT)
VS Ie
30
TYPICAL CHARACTERISTICS
--'S.
I
r-. r--- ....
-:><
t.
~
u 1.0
""I
"l
C!)
~ """- ........
100
lO
g
---
~.
""~
UI
~
~
""II! 0.1
u
f
::::I
U
~
a:
-tf '
td
...APPLIES TO,
""
~
FIGURE 7. CAPACITANCE (CeBO)
-
1.0
t.
~
----
I
tf
I-"
h
~
_r-
t,
.0 I
20
-
./
I
~
./'
t.
I
,~
~.
/
I....
............
.0 I
I
te
.L
.......
...... 1
-' 1..
./
VCE (CLAMP) =250 V
VaE o -5V
L=IOO,.h
--
t;"'
~
IBI=Ic/20} GEI0002,3
IB2=Ic/5
.I
---=:.::::
r-I-'
tf
I
.0 I
I
10
20
Ic,COLLECTOR CURRENT-AMPERES
FIGURE 11. INDUCTIVE SWITCHING PERFORMANCE
(CLAMPED)
'- ,-
20
---
t.
--- --
./
tf
-
TJ= 100°C - - - - - -
1al oIc/ 25 }GEIOOOO I
1B2 =Ic/6.25
'
.Y
10
FIGURE 10. RESISTIVE SWITCHING PERFORMANCE
,APPLIES TO,
te
5
Ic,COLLECTOR CURRENT-AMPERES
TJ=25°C
t.
I
.
,APPLIES TO,
GEI0006,7,B,9
I
FIGURE 9. RESISTIVE SWITCHING PERFORMANCE
~1::::.-
TJ =25°C
Vcc=250V
VaE= -5V
tp= 50,.SEC
IB1=Ic/2O
IB2=Ic/5
GE10004.5
_.
-'"
~
td
10
Ic,COLLECTOR CURRENT-AMPERES
I
...... i-""
",...
t,
APPLIES TOJ
,
Ial"Ic /25
Ia2=Ic/6.25
.0 I
"'--
I
.... ....
tf
td
TJ '25°C
Vee = 250V
VaE =-5V
tp = 50,.SEC
20
FIGURE 8. RESISTIVE SWITCHING PERFORMANCE
r---
t.
I B1 =Ic/20 }GE100023
Ia2=I c/5
•
10
I c , COLLECTOR CURRENT - AMPERES
Vca - COLLECTOR - BASE - VOLTS
1.0
Ial oI c/25 }GEIOOOO I
IB2 =Ic/6.25
•
TJ =25°C
Vee = 250V
VBE =-5V
tp=50,.SEC
100
10
-
~
t,
~
ALL DEVICES
TJ '25°C
"
./
V
-
te
~f-
....... ~
-- -
--
~te
tf_ _
TJ=25°C
TJ = 1000C - - - - - VCE(CLAMP)=250V tPPLIES Tq
VBE=-5V
GEIOO04,5
L=IOO,.h
IBI=Ic /25
Ia2=Ic/6.25
10
Ic,COLLECTOR CURRENT-AMPERES
20
FIGURE 12. INDUCTIVE SWITCHING PERFORMANCE
670
TYPICAL CHARACTERISTICS
,- --
'- t-
•
,- '-
---
- --- - r-t.
---.::::
I
t.
f- I-""
t,
-------
..-
[-
tj"
.-
TJ =25°C
TJ=IOOoC - - - - - -
VCE(CLAMP)=250V ~
VBE=-5V
L=IOOl'h
GEI0006,7,B,9
.lBI=Ic/2O
IB2=IC/5
5
10
20
Ic, COLLECTOR CURRENT - AMPERES
.0I
I
FIGURE 14. INDUCTIVE SWITCHING TURN·OFF
WAVEFORMS
FIGURE 13. INDUCTIVE SWITCHING PERFORMANCE
.
(CLAMPED)
Ll J11
1
20l'SEC
1---+--+-+-I-H+M---t--I-+t-j'-t'+tt-',OO,..s'EC\
[3
\ ,~ ~J~cll\ I MSEC'
I
"
DC
2Ol'SEC
~
[3
~ 10~~Bg~~\ii\m'II\§~m
ffi
[\
w
Q.
II!
\
a~
\
..
a
\
~
.J
8
Ic OR ICM LIMIT
- - - - - - THERMAL UMIT
'" GE10000,4
- - - SECOND BREAKDOWN 1-+-+-H-ftH'~
'\.
LIMIT
~ "EJ"OO~
GE10000,I,4,5
0.1.L---,-_ _ _ _ _--:-=-_...J----L---L-'-..L..I.""-7::~-~-...LIL....L..I
I
10
100
VCE' COLLECTOR -EMITTER VOLTAGE - VOLTS
,
-
Vl
1\
''\
w
ffi
10
1'.1
Q.
~,
DC
~
ffia:
a:
a
a:
I'!
o
10MSEC
\
1.0
j
8
I
0'1
\
\
GE10008,9
Vl
w
a:
w
Q.
24
.
20
a:
a:
16
Z
W
GE10000,4
..
12
0
B
a:
0
0
W
.J
.J
'\.
\..
GEIOOOI,5
::::t
0
TJ =25°C
DUTY CYCLE S 1.0 %
- - Ie OR IeM LIMIT
- - - - - - THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
~
2B
I
\
I-
FIGURE 16. FORWARD BIAS SAFE OPERATING AREA
,
Q.
:::E
«I
24
0
W
t!>
~
20
I-
20
GEI0008
0
Z
w
a:
a:
>
a:
16
a:
\
12
0
I-
TJ "'100°C
L= 100 "h
Vs C- 5V @.5n
ISI=le/IO
8
0
u
.il
4
G~10~02'f,6'j
lI-
,
,
~
w,
\GEI0003,7
GE10002,6 \
U
W
...J
...J
16
w
::>
u
\
100
\
0
I-
U
8
w
TJ "'100°C
L=IOO"h
VSE = -5V@.5n
ISI=lc/IO
GE10008,9
...J
...J
\
300
200
,
12
a:
0
u_
i"""- t- """- t-
I
400
4
....
I.)
..
100
w
u
z
w
a
w
a.
~
-
O.Z:
V
""'~
I
a:
u. 50
t!>
Z
!ia:
./
a:
40
,,~
w
o 30
w
~ 20
Q.
z
«
10
a:
>-
o
/
.00 1
10 4
PULSE
10'6
10 3
10 2
10 '
WIDTH, TIME IN SECONDS
10
ALL DEVICES
o
20
40
""" r-.... .....
" "-
a:
>z
w
iii
C~-9.
:q~1'.qT ~
~""~
~
w
~ .01
-tCO/f--t
1'",.
~ 60
0.01
'9~4
~
';;! 70
~
«
::;;
60
80
100
120
140
160
TJ=150°C
Q.
/}
:::E
«
~ 10
-+250VDC
/
ALL DEVICES
fil
a:
*RL
~J=IOOOC
(NON INDUCTIVE I
(1"10 DUl'!' CYCLE I
NOTE JUMPER
TJ =25°C
I TO 2 (RESISTIVE)
2 TO 3 tiNDUCTIVE
z
w
a:
a:
::>
u
o
a:
'/ /
022
V
CLAMP
If I
270
Ii.' /
..,.o
~
+181
0-
I
tt'd
1.0
3.0
4.0
5.0
FIGURE 2~. FORWARD CHARACTERISTICS
* =SELECT "
RI FOR+I S1 =
R2 FOR-lSI =
l SEE
SWITCHING
J TEST
CONDITIONS
-6110e
FIGURE 24. SWITCHING TIME TEST CIRCUIT
672
,
L------~r---l
100
~O
DEVICE UNDER TEST
I
I
,
VTM ,INSTANTANEOUS FORWARD VOLTAGE - VOLTS
I
I
I
.
ir'j
~
....
6Y2
r-------1---t
// /
~
a:
200
FIGURE 22. POWER DERATING
+6VOC
w
'"
180
Te- CASE TEMPERATURE - °C
FIGURE 21. TRANSIENT THERMAL RESPONSE
FLY BACK DIODE
500
~~c
80
~
0.05
...J
400
300
~~
90
.-
01J
~
FIGURE 20. REVERSE BIAS SAFE OPERATING AREA
(CLAMPED)
_.
DUTY CYCLE 0.5
200
I\:
veE' COLLECTOR - EMITTER VOLTAGE - VOLTS
FIGURE 19. REVERSE BIAS SAFE OPERATING AREA
(CLAMPED)
f=
I\:
100
500
VCE , COLLECTOR - EMITTER VOLTAGE - VOLTS
''C/W
I
GEIOO09
HIGH SPEED
GE10015,16,
NPN POWER DARLINGTON
TRANSISTORS
20,21,22,23
500 VOLTS
40-60 AMPS, 250 WATTS
These devices are designed for use in highspeed switching
applications, such as off-line switching power supplies, AC &
DC motor control, UPS systems, ultra sonic equipment and
other high frequency power conversion equipment.
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.065(1.65)
MAX.
0.845(21.47)
I- MAX . .-l~.358(9.09) MAX
OIA . .=l
r::.
*~
~ OIA.---' L
0.057(1.45)
SEATING PLANE
.426(10.82) MIN.
II
CASE TEMP.
REFERENCE
POINT
.20(5.00)
0.162(4.09)
0.15(3.64)
2 HOLES
BASE
OIA.
0.440(11.18)
DEVICE CIRCUIT
absolute maximum ratings (25 0 C)
Voltages
Collector Emitter
Collector Emitter
Emitter Base
Currents
Collector Current (continuous)
Collector Current (peak)
Base Current (continuous)
Base Current (peak)
Power DIssipation
Power Dissipation
Power Dissipation
(unless otherwise specified)
GE
GE
GE
GE
GE
10015
400
600
10016
500
700
10020
200
300
10021
250
350
10022
350
450
10023
400
600
VESO
B.O
B.O
B.O
B.O
B.O
B.O
Units
Volts
Volts
Volts
Ic
50
75
10
15
50
75
10
15
60
100
60
100
20
40
60
40
60
20
Amps
Amps
Amps
30
Amps
250
143
250
143
1.43
1.43
-65 to
+200
+275
0.7
Symbol
VCEOlSUSl
VCEV
ICM
Is
ISM
Po(Tc = 25°C)
Po(Tc = 100°C)
Derate above 25° C
Temperatures
Storage and Junction
Tstg and TJ
Soldering 1
TLl
Thermal Resistance
0.420(10.67)
ROJC
30
20
30
250
143
1.43
250
143
1.43
250
143
1.43
250
143
Watts
1.43
W/oC
-65 to
+200
+275
-65 to
+200
+275
-65 to
+200
+275
-65 to
+200
+275
-65 to
+200'
+275
0.7
0.7
0.7
0.7
0.7
1) Max. lead temperature for soldering purposes 1/8" from case for 5 seconds.
673
20
30
GE
Watts
. °C
°C
°ClWatt
device electrical characteristics
(Test Conditions in Next Section; TC = 25°C Except as Notes)
STATIC
Min.
Max.
Max.
Max.
See Figure
Min.
Max.
Min.
Max.
(1) VCEO(SUS)
(2) ICEV
ICEV (Tc = 150°C)
(3) lEBO
(4) Isib
(5) hFE
(6) hFE
(7) VCE{SAT)
(8) VCE{SAT)
(9)
(10)
(11)
(12)
VCEISAT
VBE{SAT
VBE{SAT), (TC = 100°C)
DIODE VF
DYNAMIC
OUTPUT CAPACITANCE
(VCB =10V, IE =0, fTEST =1MHz)
SWITCHING
(1) Resistive
tel
tr
ts
tf
(2) Inductive
(Tc = 100°C)
ts
tf
tc
(3) Inductive
(Tc = 25°C)
ts
tf
tc
Max.
Max.
Max.
Max.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
GE
GE
GE
GE
10015
10016
10020
10021
10022
10023
Units
400
.25
5.00
350
13
25
500
.25
5.00
200
.25
5.00
175
14
75
1000
250
.25
5.00
175
14
75
1000
350
.25
5.00
400
.25
5.00
175
15
Volts
10
10
-
-
-
-
-
2.2
5
2.2
5
2.2
4
2.2
4
2.5
2.75
2.5
2.75
2.4
3.00
2.2
5
2.5
2.5
1.9
5.0
1.9
5.0
2.4
3.00
3.5
2.1
5.0
3.5
2.1
5.0
2.2
5
2.5
2.5
2.5
1.9
5.0
2.5
1.9
5.0
Volts
Volts
Volts
Volts
Volts
Volts
Volts
.09
.30
.09
.30
.20
1.00
1.45
2.5
.095
.20
.32
1.00
1.50
3.5
.30
.50
2.7
4.5
.30
1.0
.85
2.0
1.8
.095
.20
.09
.25
.09
.25
p's
p's
.32
1.00
1.50
3.5
.30
.50
2.7
4.5
.20
1.00
1.45
2.5
.30
1.0
.20
1.00
1.45
2.5
.25
.90
2.8
5.0
.21
1.0
.85
2.0
1.8
.68
2.0
1.6
.68
2.0
1.6
p's
p's
p's
p's
p's
p's
p's
p's
p's
p's
p's
p's
p's
p's
.12
.12
.10
.10
.40
.40
.30
.30
-
.20
1.00
1.45
2.5
.25
1.0
2.8
-
350
13
25
-
.25
1.0
2.8
-
.21
.21
.68
.68
1.6
3.0
1.6
3.0
.10
.50
-
.10
.50
.30
1.0
674
-
-
.30
1.0
-
-
-
-
GE
175
15
50
600
-
-
-
GE
rnA
rnA
rnA
50
600
.25
.90
2.8
5.0
.21
1.0
-
-
-
p's
p's
p's
p's
TEST CONDITIONS
STATIC
SWITCHING
(1) VCEO(SUS)
IC = 100mA, .
VCLAMP = VCEO Rated
APPLIES TO
All
(2) ICEV
VCEV = Rated Valve,
VSE = -1.5V
APPLIES TO
All
(3) lEBO
IES = 2.0 Volts
APPLIES TO
All
(4) Islb
SEE APPROPRIATE FORWARD BIAS SECOND
BREAKDOWN FIGURE
(5) hFE
(a) Ic = 10A, VCE = 5V
(b) Ic =15A, VCE =5V
(c) Ic = 20A, VCE = 5V
APPLIES TO
GE10022,23
GE10020, 21
GE10015,16
(6) hFE
Ic =40A, VCE
APPLIES TO
GE10015,16
=5V
(9) VCE(SAT)
(a) Ic =20A, Is =1A
(b) Ic =30A, Is =1.2A
APPLIES TO
GE10015, 16,22,23
GE10020,21
(10) VSE(SAT)
(a) Ic = 20A, Is = 1A
(b) Ic =30A, Is =1.2A
APPLIES TO
GE10015, 16,22,23
GE10020, 21
(12) DIODE VF
a) IF = 20A
b) IF =30A
GE10015, 16, 22, 23
GE10020, 21
(3) INDUCTIVE
SAME AS (2), BUT TC = 25°C
NOTE: See FIGURE 22 for Switching Time
Test Circuit.
APPLIES TO
GE10022,23
GE10015,16
GE10020, 21
(8) VCE(SAT)
(a) Ic =40A, VCE =5V
(b) Ic =50A, VCE =10V
(c) Ic =60A, VCE =5V
APPLIES TO
(2) INDUCTIVE
APPLIES TO
L = 100~h, IB1 = 1A, IB2 = 4A, Tc = 100°C
a) IC = 20A, VCLAMP = 250V
GE10015, 16,22,23
b) IC =30A, VCLAMP =175V
GE10020, 21
APPLIES TO
GE10015, 16,22,23
GE10020,21
(7) VCE(SAT)
a) Ic =20A, Is =1A
b) Ic =30A, Is =1.2A
(11) VSE(SAT)
SAME AS (10) BUT Tc
(1) RESISTIVE
tp = 50~s, Duty Cycle :5 2%
a) VCC =250V, Ic =20A,
IS1 = 1A, IS2 =4A
b) VCC =175V, Ic =30A,
IS1 = 1A, IS2 = 4A
=100°C
APPLIES TO
GE10015, 16,22,23
GE10020, 21
675
TYPICAL CHARACTERISTICS
'!lUll
,
Ic -lOA
TJ"ISOOC
,
~
".
TJ-IOOoC
~
.",.-
!
""-~
.....-
TJ=2SoC
lZ
VCE" S V
I I
ALL DEVICES
g
,
~
II:
c::
9
8
7
t
6
o
,
tJ
c,
..
~
S
TJ'2SoC
8
4
1~=IDDoc
~ 3
~,
III
.<::
TJ'ISD"
10
..J
C~
1\
r-..
o
.01
0.1
g,
I
!:i
P=2S
GEI0020,21
'"....
,
If/J'2S0C
II:
TJ'ISO"C
'tJ:!~
t::
~ 1.0
o
!:i
A.. TJ·IOO·C
~
~~
g,
TJ =2S"C
I
%
,-TJ '2S"C
II:
(TJ~O~ ~
'"
1=
~ 1.0
~~
TJ·IOO·C
TJ =2S·C
,
II:
TJ = ISO·C
....o
t
'":lo
tJ
'"..J..J
otJ
,
tJ
,
S
!!!
S
!!!
'"
~
III
~
O. I
O. I
10
100
Ic,COLLECTOR CURRENT-AMPERES
FIGURE 3. VeE
;=TJ'2S0~
, ITJ=IOOoC
Ul
!:i
o
>,
..,
(SAT)
100
Ic,COLLECTOR CURRENT-AMPERES
I
VS Ie
FIGURE 4. VeE (SAT) VS Ie
TJ=ISO"C
.. TJ'IOO"C
~ ... 'T;'= 2S °C
T~=I~b"h
..,. III! TJ=IOOOC
- TJ =2S·C
tcTJ=IOOOC
In
!:i
~
II:
'"~
10
T~"ISO·C
Ul
TJ'ISO°C
II:
1.0
Ia. BASE CURRENT - AMPERES
FIGURE 2. COLLECTOR SATURATION REGrON
13'10
GE 100lS,I6,22,23
Ic"SOA
,
I
\
FIGURE 1. DC CURRENT GAIN (VeE = 5V)
Ul
TJ "2SoC
ALL DEVICES
/I I
1\
2
100
Ie - COLLECTOR CURRENT GAIN - VCE • S V
10
"
10
~
a
IC' 2SA
Ie'SA
Ul
III ,
I I
!:i
~
~ 100
I
o
>
.::: 1.0
TJ=2S0C
I.--:::::: :;::::::~o.c
'"....t::
:IE
'",
'"~
1.0
:IE
'",
~CD
CD
I
I
S
rn
~
!!!
i;j
;
~
p-2S
GEI0020,21
13=10
GE 100lS,I6,22,23
O. I
10
O. I
100
Ic,COLLECTOR CURRENT-AMPERES
100
Ic ,COLLECTOR CURRENT - AMPERES
FIGURE 5. VSE (SAT) VS Ie
FIGURE 6. VBE (SAT) VS Ie
676
TYPICAL CHARACTERISTICS
r--
TJ'25°C
ALL DEVICES
[il
1000
------
........
t.
1.0
rn
TJ =25°C
Vcc=250V
I B1 =20
la2=5
VaE =-5V
tp= 5Ol'SEC
GEI0015,I6,22,23
,
'l
t-.....
'"
z
:;:
.....
~
/ ' '7
rn
...........
V
I-
...z
CcaO"'- .......
I"----
~
tf
~
~ O. I
=>
Id
U
...........
0:
g
...
U
...J
...J
o
U
100 I
10
Vca- COLLECTOR - BASE-VOLTS
.0 I I
100
5
10
100
Ic, COLLECTOR CURRENT - AMPERES
FIGURE 7. CAPACITANCE (CcSO)
FIGURE 8. RESISTIVE SWITCHING PERFORMANCE
ts
t.
-r- ...
-1-
Is
...urn
r-~
,'lI.O
'"z
:;:
~
tf
-. /tr
I
Ie
U
l-
irn
V"
I-
...z
i"
...
0:
~ 0.1
td
u
.0 I
I
TJ=IOOoC - - - TJ =25°C
VCE (CLAMP)= 250 V
Ial=Ic/20
la2=lc/5
VaE=-5V
L=IOOl'h
...
U
...J
...J
GEI0020,21
o
U
.0 I
10
100
Ic, COLLECTOR CURRENT - AMPERES
;I"
... "'tf V
~I"
GE lOOI5,'6i22'12~
10
100
Ic ,COLLECTOR CURRENT -AMPERES
I
FIGURE 9. RESISTIVE SWITCHING PERFORMANCE
....,.,
If
0:
g
TJ =25°C
Vce=250V
lal=20 ---la2· l c/ 25
veE = -5V
tp =5Ol'SEC
-Ie
FIGURE 10. INDUCTIVE SWITCHING PERFORMANCE
(CLAMPED)
VCE(CLAMP)
IC
90% VCE(CLAMP) -"'Ho:-
I.
t,
II-'
te
,.,. I......
,,"
V
Ie
-' -
~
If
TJ=IOOoC - - - TJ =25°C VCE (CI.AMP) = 250 V
lal=Ie/3O
Ie2=lc/25
VaE'-5V
GEI0020,21
L=IOOl'h
.0 I
I
10% VCE(CLAMP)
10
10% Ic
~~
lal _ _- ,
100
Ic ,COLLECTOR CURRENT - AMPERES
ALL DEVICES
FIGURE 12. INDUCTIVE SWITCHING TURN-OFF
WAVEFORMS
FIGURE 11. INDUCTIVE SWITCHING PERFORMANCE
(CLAMPED)
677
TYPICAL CHARACTERISTICS
100
100
III
~
20,. SEC
\
100,.SEC
~C\ 10MSEC
:Ii
~ 10
Ll
100,.SEC"
III
~
~
W
D~\
Q.
~ {
I MSEC
10MSEC _
:Ii
\
o
a:
~ 1.0
j
8
~
TJ=2SoC
DUTY CYCLE :5 1"10
::>
l:t:
~ 1.0
j
8
"
"
i\
t-
GEI00IS,I6
"\. GEIOOIS
- Ic OR ICM LIMIT
- - - - - - THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
O. I
10
100
I
VCE,COLLECTOR-EMITTER VOLTAGE-VOLTS
"
\
o
o
"-
r\
~
a:
a:
""\.
\
TJ=2S oC
DUTY CYCLE :5 1"10
u
GEI0020
GEI0020,21
GEI0021
H
GEl 0016
- IC OR ICM LIMIT
- - - - - - THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
O. I
I
10
100
VeE, COLLECTOR -EMITTER VOLTAGE - VOLTS
'\
'\."ll II II
1000
1000
FIGURE 13. FORWARD BIAS SAFE OPERATING AREA
FIGURE 14. FORWARD BIAS SAFE OPERATING AREA
100~~§II§~
~
100
20,.SEC
t--+--+++-++tot:t---+---if-H-+++l-ttIOO,.SEC\-Rio-:-:::""",;';"TT-rH
::l
~
III
\
;ji
110§!IR*IIHlII
a
\
"I MSEC
·\'OMSEC
!r
w
DC
a:
"'\
~
r'.
fO~~=~~~II§'!!11
\
-
TJ=2SoC
GE10022,23
DUTY CYCLE:!! 1"10
.!:l
"GE10022
90
w
a:
w
80
Q.
:Ii
C(
I
70
t-
Z
w
a:
a:
:::J
0
50
\
\
a:
0
to
W
..J
..J
0
40
30
U
- Ic OR rCM LIMIT
"
I
11111
- - - - - - THERMAl. LIMIT
"
- - - SECOND BREAKDOWN
1'\ \l
0.1 '--_ _ _ _L_'M_'T_ _ _ _ _-'--'-........LJ..J..J.I..-'
"\..........J...l
l\."""""..LL...L..JL-L.JL-L.I
I
10
100
1000
VCE,COLLECTOR-EMITTER VOLTAGE-VOLTS
....
II II
20 I ~
,0 I ~
00
FIGURE 15. FORWARD BIAS SAFE OPERATING AREA
i\
\
\.
0
GEI0023
GE10016
GE'OO'S
60
TJ!100°C
1m"lc/'0
"\..
.....
VBE"-SV(j).~O
......
L= 'OO!'h
r--..
GE100'5 161
'00
200
300
400
VCE, COLLECTOR- EMITTER VOLTAGE-VOLTS
I'...
......
500
FIGURE 16. FORWARD BIAS SAFE OPERATING AREA
(CLAMPED)
100
100
90
90
III
W
a:
w
Q.
:Ii
C(
I
III
80
w
a:
w
80
70
:Ii
70
Q.
C(
tZ
w
II::
a:
60
:::J
0
50
a:
~
1\
\
\
\
\
40
0
W
..J
..J
I
GE10021
GE10020
20
::>
SO
a:
0
t;
w
0
....U
z
60
w
a:
a:
r-
f10 ff-
TJS,OOoC
1\
GEI0022\
..J
..J
40
,\
1\
\
30
0
-
0
.; 20
>
L "'OO!'h
la,"Ic/'O
I\.
VaE"-5V(jI.sfi
GE.'0020,2'
,00
200
300
400
VCE, COLLECTOR - EMITTER VOLTAGE -VOLTS
'0
"
500
FIGURE 17. REVERSE BIAS SAFE OPERATING AREA
678
GE'0023
\
0
30
0
t-
-
-
\
TJs 100°C
IB,"IC/IO
"\.
'\
VBE"-5V@.5O
r-....
L=IOO!,h
....... r-..
GEI002223
100
200
300
400
VCE, COLLECTOR - EMITTER VOLTAGE-VOLTS
r-..
FIGURE 18. REVERSE BIAS SAFE OPERATING AREA
(CLAMPED)
500
TYPICAL CHARACTER ISTles
1.0
DUTY CyciLE = .5
I-
~
~
}-
• .2
O. I
= .1
• . 05
0
I
UJ
0
2
ct
C
UJ
" .01
.0 I
~
~
.00 I
UJ
:r
lI-
2
~?"
'If!
I
~
'"
70
II:
0
I0
s. ~
'\
BO
"'~"o~o
"
50
II:
UJ
C
40
II:
UJ
30
2
~
~
Il.
ALL' DEVICES
e-ll
~
~
60
'1'0
~-ll
«'-jl
~
'V
.0000 I
.000001
11
l'
90
/sINGLE PULSE
~ .000
~
I-
.....
V
/
VI
Il.
~
II:
-- ??/- ~
100
'\ 1
I,\O~
~1t6'
D!,1>1';,
~1-6'
r\.
r...
20
10 I- ALL DEVICES
I~
1 1 1
.00001
.01
0.1
.0001
.001
PULSE WIDTH - TIME IN SECONDS
1.0
10
I.....
00
20
40
60
BO 100 120
140 160
1,\
IBO 200
Tc- CASE TEMPERATURE _·c
FIGURE 19. TRANSIENT THERMAL RESPONSE
FIGURE 20. POWER DERATING
40
A
3D
ffl
II:
UJ
/'
20
Il.
TJ =150·C
::0
ct
I
10
UJ
9
8
!z
~
7
o
6
5
~
4
i3
II:
j
I
~f.>=IOO.C
TJ =25·C
I
iLl
11/
1/
II:
~
FLYBACK DIODE
ALL DEVICES
3
JJL
I I
::£
::; 2
li
I
1.0
2.0
3.0
4.0
5.0
VTM, INSTANTANEOUS FORWARD VOLTAGE-VOLTS
FIGURE 21. FORWARD CHARACTERISTICS
+250VDC
33
RL
(NON INDUCTIVE)
(.% DUTY CYCLE)
+5V
~50".
.022
V
FIGURE 22.
SWITCHING TIME
CLAMP
~- 0.1
0.5 0.7
~
""'iO;1-
"
...
N\
I'
\
"
I\.
8
l\
10 A
~
5.0 A'
07
; 05
o
t;
~ O.l
02
1\
=25°C
\
7.5 A
!:
~
7.0
0.3
TJ
~
1\
''X
~ 10
1\[\1
,
,
~
o
>
10
5.0
0.15 0.2
\
>
"1\1\
= 2S a C
CI
~
~ 5.0
'"
r-....
~
TJ
iii 7.0
~
u
u
...
10
.....
~100oC
2.0
~
~ 1.0
a:
~ 0.7
2 0.5
ai:
0.3
...
ti
---
r-jJl = 5.0
- TJ = 25°C
~ 0.2
:3
~ 0.1
>0.07
0.05
0.1
~
TJ = 25 a
c
~
~
-~
"
-
~~
r--I-
looac
-
100 a C
0.2
0.3
0.5 07
10
2.0
0.3
0.1
5.0 7.0 10
lO
10K
TJ-lSOOC
""
125~C
;:;;1000
u
z
/
~
......
lOOOC
w::e>.
,/
C
If
-
TJ
C
u
75°C
FORWARD
lO
25 a C
Cob
/
/ VCE -250V=
25°C
I
I
I
10- 1
-0.2
0
+0.2
5.0 7.0 10
r-
u 100
REVERSE
20
,... ......
u
...
1
./
0.5 0.7 1.0
Cib
1
1
1/
.J'
0l
FIGURE 4 - BASE-EMITTER VOLTAGE
/ [/' 1
V ~ /
/
02
Ie. COLLECTOR CURRENT lAMPS)
IC. COLLECTOR CURRENT (AMPS)
FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE
-0.4
""~
+Q.4
"'"
I
r
10
1.0
~0.6
10
100
VR. REVERSE VOLTAGE (VOLTS)
VIE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 6 - CAPACITANCE
FIGURE 5 - COLLECTOR CUTOFF REGION
687
1000
8,0
I
IC Pk _
....". VCE(pk)
90% VCE(pk) ~
./
IC/
"'-I..
1'\
..,./' V
Isv
I,vlf
_ 7,0
'"c-
1\ 90% IC(pk)
~ 5,0
"
l S - I - 90% lSI
-- --\-, - -- --- - -
::>
10"" ........
Ie pk -
-
2""
u
J1SL--1..
0.01
Iii -1,0 V
.... r-_
....
IZ
ReJc111 ~ rll) ReJC
ReJC ~ 1,t7'C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME @11
TJlpk) - TC ~ Plpk) ZOJcll)
DUTY CYCLE, D~ 11il2
0,05
~
,- ,- -
I-I-
TC = 25°C
"-
:Ii
~ 2,0
t...-
w
-
iii"
I---
i.--'" I-""'""
3,0
5,0
7,0
IC. COLLECTOR CURRENT (AMPSI
5,0
0.3
-'
12
I
I
~
2,0
.
i--'"
FIGURE 10 - CROSSOVER AND FALL TIMES
D- 0.5
~
'"
"
I--- ---IIi
0,3
1,5
...... ......."""" ...............
5,0 V
I'-
0,7
-
~
f.::'i::"- t-....
+-
w
0:
~
'e-1,OV
I
0, 7 r-- {3f = 5,0
r-- TJ = 75°C
........
:;;
t-.
;:: 1,0
'"
w
o
~~
,,<5>
'l'«
a: ....
0-'
.... 0
z
A
o0,f . .
1-.
U
0.05
0.02
~ !ill
Tc = -55°C
I:l!l
:E;:
w-'
~~
«
.....o!l ~
::;iiI"'"
~"
3
rn
a:>
Ww
--
-'
-'
0
COMMON EMITIER
ICIIS=5
I".
..
0.5
III
-...
~
--
25
100
0.3
0.3
0.1
0.03
10
0.3
0.1
0.03
100
30
FIG.3 VeE(sat) - Ie
20
I
FIG. 4
I I I IIIII
I
IC MAX (PULSED)
10
ICMAX
(CONTINUOUS)
r,,,
5
.9
~~
3
!zw
(\,\ 90
~O,
:::>
10
30
II III
~ir~
.. ~~_I' '''"1;
'"
"'a> ",
-
VeE(sat) - Ie
~-
II-
"
-i~:
1>
"
u
a:
~:::l
8
3
" ~'61- "". "'" I"
-
a:
a:
1
COl_LECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
1-0.5
0.3
-I
--'-
'>.:
~
N
SINGLE NON REPETITIVE PULSE
Tc = 25°C
~
CURVES MUST SE DERATED LINEARLY
WITI-IINCREASE IN TEMPERATURE
x
«
:;
0
w
U
>
-
-
f---
I-I--
f--I--
I
0.1
10
30
100
300
COLLECTOR-EMITIER VOLTAGE VCE (V)
FIG.5
10
~
~
11/
8
.9
~
~
aa:
6
ti
~
4
80
COMMON EMITIER
VCE = 4V
"
r-.... ........
J
if
o
8
SAFE OPERATING AREA
i-!!"
f--
J ,..
-
-55
/ I
0.4
0.8
'" """
25
». I
o
o
-
- f--
"" I"'"
.........
~
-- 0.1
1.2
1.6
2.0
2.4
2.8
3.2
20
SASF. EMITIER VOLTAGE VSE (V)
FIG. 6
40
60
80
100
CASE TEMPERATURE Tc (OC)
Ie - VeE
FIG.7
695
Pe-Tc
120
......
........
140
160
696
HIGH SPEED
GES060,1,2
NPN POWER DARLINGTON
TRANSISTORS
400-500 VOLTS
20 AMP, 125 WATTS
These devices are designed for use .in high speed switching
applications, such as off-line switching power supplies, AC &
DC motor control, UPS systems, ultrasonic equipment and
other high frequency power conversion equipment.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.845121.47)
M A X ' H .358(9.09) MAX
"'"'~~~ ~""""'"'
~ DIA.-II-
.426(10.82) MIN
0.038r097)
CASE TEMP
REFERENCE
POINT
2015.00)
~DIA
0.15r3.84)
2 HOLES
DEVICE CIRCUIT
maximum ratings (TC = 25° C)
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @Tc = 25°C
Operating and Storage
Junction Temperature Range
~
0.420(10.67)
(unless otherwise noted)
GE5061
450
400
SYMBOL
Vcso
VCEO
VESO
Ic
ICM
ICSM
IS
ISM
PD
GE5060
400
350
GE5062
500
450
8
8
8
20
25
42.5
4
6
125
20
25
42.5
4
6
125
20
25
42.5
4
6
125
TJ. TSTG
-65 to +150
-65 to +150
-65 to +150
°C
ROJC
1
1
1
°C/W
TL
300
300
300
°C
UNITS
Volts
Volts
Volts
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
697
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
-
-
Volts
-
.2S
mA
200
mA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(~= .SmA)
( clamp = VCEO Rated)
Collector-Base Voltage
(IC = 0.2SmA)
GES060
GES061
GES062
VCEO(sus)
3S0
400
4S0
GES060
GES061
GES062
VCSO
400
4S0
SOD
Icso
-
IESO
-
Collector Cutoff Current
(Vcs = Vcso Rated)
Emitter Cutoff Current
(VES = 4.SV, IC = 0)
Volts
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 16
Clamped Inductive soa with Base Reversed Bias
SEE FIGURE 17
on characteristics
DC Current Gain
(IC = 10A, VCE =SV)
(Ic = 1SA, VCE = SV)
(Ic = 20A, VCE = SV)
Collector-Emitter Saturation Voltage
(IC = 10A, Is = 1A)
(IC = 10A, Is = 2A)
(IC = 20A, Is = 2.0A)
Base-Emitter Voltage
(Ic = 10A, Is = 1A)
(Ic = 20A, Is = 2A)
hFE
VCE(sat)
VSE(sat)
100
40
1S
160
11S
6S
-
-
-
1.20
US
1.6
1.S
1.4
2.0
-
1.95
2.3
2.S
3.S
V
-
0.3
-
p's
p's
Volts
""-
-
V
switching characteristics
Resistive Load
Rise Time
Storage Time
= 1SA, IS1 = .75A, IS2 = 1.5A
VCC = 300V, tp =SO p'sec
IC
tr
Fall Time
ts
-
2.7
tf
-
1.1S
ts
-
3.3
0.4
-
-
1.9
2.8
-
Inductive Load, Clamped
Storage Time
Crossover Time
=100 p.H
IC = 1SA, IS1 = .7SA, IS2 = 1.SA
VCC = 300V, L
tc
Fall Time·
tf
1.7
emitter-collector diode characteristics
Forward Voltage
IF = 10A
IF = 25A
VF
698
TYPICAL CHARACTERISTICS
1000
100
IICE=5V
VCE=IOV
.- ~
z
T~'150y
V ........ !--
t!l
~
T~'IOOoC
u
u
. . . . . .V
~=ZD
o
/./
'w'
...
u
u
o
l~\'
./
./
~
t!l
./
:r
TJ=15~
z
o,4 I
10
30
10
lB. BASE CURRENT (AMPE_RES}
Ie. COLLECTOR CURRENT (AMPERESI
FIGURE 3. COLLECTOR SATURATION REGION
10.0
(J =Ie/IBI
Vi
/
I-
..J
o
7
~
a:
...
w
1/
~
w
a:
vV'
U
I--" ~ I::;;~
W
..J
..J
81.0
TJ=25°C
(J=le/lsl
/
Ul
I-
..J
17j V/
I-
oI-
10.0
(J=lool H(J=50
I
I
I
I
(J=25
I
I
T~=IOO°C
o
(J=IO
~
a:
w
~
lI-
~
w
W
1//
%
/
Z
0
....
~
en
....
Z
w
a:
a:
a:
0
t;
1/
_
V
~
....
:J
0
.",
O. I
~
-
'"
~~
w
-'
-'
0
0
}
f
"'II
/
FIGURE 8. CAPACITANCE (CeBO)
10.0
Vce=2S0V
IeI=lc/20
le2=le/IO
VBE=-5V
t p =50,.SEC
-
u
w
en
.;;
i
~
..........
~
a:
a:
!.or
v'"
~
1.0
b. tf
.....
:J
o
a:
""'"
§w
-
-'
8
~
~
o
w
W
~
N
:;
~
a:
o
z
2
I
a
~
_-... ---_.
.............,. ~ .-- ~
v:. --'"-- "'~ --- -~- ....
.'
~!"" _
,
.... V
...
1-1'""'
1-- I-I-
-- ....::::
..
----
RBE" loon
I
RaE=IKn
RBE"loon
RBE'lon
RaE=lon
Ra£,Ul
RBE"ln
~:::-:
I
10
20
I
-ts
z
i
ts
,~:~~
~te
\.0
te
IZ
w
a:
r" _ _
~-
:J
o
a:
o
....
o
w
-'
-'
8
O. I
I
Ie. COLLECTOR CURRENT (AMPERES)
-- --
~/
te
t1
a:
TJ=25·C
TJ=IOO·C----TJ=150·C
VCE (CLAMP) =250 V
L"IOOl'h
lal"Xc/20
la2=Ic/10
VBE'-5V
-
~/
~
~
~
~
ts
~
i=
RBE=IKn
3
w
Ul
w
a:
--
(;
Cl
4
20
10
FIGURE 10. TURN-OFF TIME (RESISTIVE)
.;;
i=
~
Vec=250V
lal= Ic/2O
IB2=lc/10
VaE =·5V
t p =5OI'SEC
10.0
NOTE' NORMALIZED TO
ts@ 25°C FROM
FIGURE II
IaI"Ic!40---Td"25"C
Vec"2110V
tpollO,.sEC
VBE-OY
II
i--'"
IC, COLLECTOR CURRENT (AMPERES)
TURN-ON TIME (RESISTIVE LOAD)
III " Ic/20
~
/L
... ...
I
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 9.
~
.,.
O. I
20
10
-
v~
----
-'
:.= td
-
~
~
w
TJ=2S·C
TJ=IOO·C-TJ=ISO·C
~
~
Z
/
r--
100
VCB. COLLECTOR·BASE (VOLTS)
FIGURE 7. VBE(SAT) VS. Ie. T J = 100°C
1.0
r--....
10
30
10
Ie, COLLECTOR CURRENT (AMPERES)
(;
w
en
r--b
~;
.
r..;::::::
tf
./
k;"
..... 1"""""'
10
20
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 11. NORMALIZED RESISTIVE
SWITCHING STORAGE TIME (RBE VARIATIONS)
VS. COLLECTOR CURRENT
FIGURE 12. CLAMPED INDUCTIVE
TURN-OFF TIME
700
TYPICAL CHARACTERBSTDCS
1.6
1.4
~
w
::;;
~
1.6
TJ =2S0 C
I c /IBI=20
VeE '-SV
CLAMPED INDUCTIVE
LOAD, L'IOOl'h
VCE(CLAMPI =250 V
. / v.....V
....-: ~ /
1.2
«
....
1.0
'"0
w
N
::::;
«
::;;
II:
0
z
1.4
V
-
w
::;;
~ 1::/""-
1.2
'"'"0
IC'20A
1.0 Ic'IOA
IC'5A
0
II:
<>
l -I--
~
I-- I--
Ic'SA
Ic'IOA
I c '20A
0
w
N
::::; 0.8
«
::;;
II:
0
z
0.6
0.4
I.S
1.0
0.5
2.0
VeE. COLLECTOR EMITTER VOLTAGE (VOLTS)
RATIO. 161/162
FIGURE 15.
CROSS-OVER TIME VARIATION
WITH 182
FIGURE 16. FORWARD B!AS Sl~Fr::
OPERAT!NG t:W'tEl\
25
u; 20
w
w
0..
::;;
II:
~
....Z
IS
w
a:
a:
~
<>
II:
0
10
....
<>
W
...J
...J
0
<>
9
S
1\
\
TJ • 2So C
L·IOO,.h
VBE ,-sv@.sSl
ISl'lclIO
I
I
i"
I
200
100
300
GE5060/6060
GE,J061/6061
~GE50621
6062
V
400
SOO
10
VCE, COLLECTOR EMITTER VOLTAGE, CLAMPED, (VOLTS)
FIGURE 18. TRANSllEl\lT THlER~'UlAl Rk:St'O~\~SiE
REVERSE BIAS SAFE
OPERATING AREA
FIGURE 17.
701
TYPICAL CHARACTERISTICS
100
f\: ..........
90
~
a:
0
70
f-
U
«
"-
60
'>=z"
50
«
r--.... ~oo\'OI
""
80
.......~kO
"'- V'1!
w
'~~a
w
..........
~Of./>."'6'
40
'" "'-
a:
:;:
-.....;::~o\'G
~1l
a:
0
~"'o\' D"R.
I
30
0
Il.
20
'r'\..
10
o
o
20
40
60
80
100
~
120
140
160
Te. CASE TEMPERATURE I'C)
FIGURE 19.
POWER DERATING
DIODE CHARACTERISTICS
+2!10VOC
t6VQC
l % Ol,.Y", C'1'CLE 1
iii
w
a:
20
w
a..
(NON INDUCTIVE)
TJ=IOO·C----TJ=150·C--
::;;
~
fZ
::J
u
o
~
a:
~
10
~
V
.
..,.--'->
.I sl
/'
//
z
«f-
':ii'
.!:
F.o
.11 /
tii
z
I
0.0
1/II
1.0
,
I
DEVICE UNDER TEST
I
'II
z
«
V
CLA-.P
,
I
I
"-
::J
o
A139£
r------I-- --,
022
o
III
G'
NOTE JUMPER
I TO 2 (RESISTivE)
2 T031INDUCTIVE~92
47
l,-
w
a:
a:
a:
1..: IDa,. n
RL
TJ=25·C
B
Q44VHI
100
,
L------~r--~
R L '30ll. FOR GE6251, 2, 3
RL'2o.n. FOR GE5060, 1,2
-6VOC
2.0
3.0
4.0
5.0
a
GE6060, 1,2
* = SELECT
RI FOR +111 1 18EE IWITCMING
RZ FOR -.ra, • TEST CONDITIONI
J
VTM. INSTANTANEOUS FORWARO VOLTAGE (VOLTSI
FIGURE 20. FORWARD CHARACTERISTICS
FIGURE 21. SWITCHING TIME TEST CIRCUIT
702
HIGH SPEED
GE6060,1,2
NPN POWER DARLINGTON
TRANSISTORS
400-500 VOLTS
20 AMP, 125 WATTS
These devices are designed for use in high speed switching
applications, such as off-line switching power supplies, AC &
DC motor control, UPS systems, ultrasonic equipment and
other high frequency power conversion equipment.
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r: H
"':'.*~--=t; ""n~~"
0.845121 471
MAX.
0.04311091
DIA....J
0.03810971
I
I-
.358(9.09) MAX
426110.821 MIN
CASE TEMP
REFERENCE
POINT
.2015.001
0.16214.09}
0.1513.841
2 HOLES
DEVICE CIRCUIT
maximum ratings (T C = 25° C)
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @ Tc = 25°C
Operating and Storage
Junction Temperature Range
0440(11.18)
0.420110.671
(unless otherwise noted)
SYMBOL
VCBO
VCEO
VEBO
Ic
ICM
ICSM
IB
IBM
Po
GE6060
400
350
5
20
25
42.5
4
6
125
GE6061
450
400
5
20
25
42.5
4
6
125
GE6062
500
450
5
20
25
42.5
4
6
125
UNITS
Volts
Volts
Volts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
°C
R8JC
1
1
1
°CIW
TL
300
300
300
°C
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
703
electrical characteristics (Tc
I
==
25° C)
(unless otherwise specified) .
I SYMBOL I
CHARACTERISTIC
MIN
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = .5mA)
(Vclamp = VCEO Rated)
Collector-Base Voltage
(Ic = 0.25mA)
I
TYP
MAX
UNIT·
--
Volts
GE6000
GE6061
GE6062
VCEO(sus)
350
400
450
GE6060
GE6061
GE6062
VCBO
400
450
500
-
-
ICBO
-
-
0.25
mA
lEBO
-
-
200
mA
Collector Cutoff Current
(VCB = VCBO Rated)
Emitter Cutoff Current
(VEB = 1.5V, IC = 0)
Volts
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 14
. Clamped Inductive soa with Base Reversed Bias
SEE FIGURE 17
on characteristics
DC Current Gain
(Ic = 10A, VCE = 5V)
(Ic = 15A, VCE = 5V)
(Ic = 20A, VCE = 5V)
Collector-Emitter Saturation Voltage
(Ic = 10A, IB = 1A)
(Ic = 10A, IB = 2A)
(Ic = 20A, IB = 2A)
Base-Emitter Voltage
(Ic = SA, IB = .5A)
(Ic = 20A, Is = 2A)
hFE
40
30
10
160
115
65
-
-
-
1.2
1.15
1.6
1.5
1.4
2
V
-
1.95
2.3
2.5
3.5
V
tr
-
0.3
0.4
p,s
ts
-
2.3
2.5
tf
0.5
1.0
ts
-
2.6
p,s
tc
-
0.5
tf
-
0.12
-
-
1.9
2.8
-
Volts
VCE(sat)
VBE(sat)
-
sWltchmg characteristics
Resistive Load
RiseTime
VCC = 300V, tp = 50 p,s
Storage Time
Ic
=15A, IS1 =1.5A, IS2 = 2.25A
Fall Time
Inductive Load, Clamped
Storage Time
VCC
Crossover Time
Ic
=300V, L =100 p,H
=15A, IS1 = 1.5A, IB2= 2.25A
Fall Time
emitter-collector diode characteristics
Forward Voltage
IF = 10A
IF = 25A
VF
-
704
-
TYPICAL CHARACTERISTICS
1000
100
V,cE'5V
z
:;;:
veE'lOV
TJ o I50·Y ...............
~
t:J
....Z
w
........
/
~ 100
J=
::;)
o
o
o
. / ../
'w
./
~
-
TJ"IOO·C
...... V
~J'O°C
t:J
/
....Z
W
'"'"
10
::;)
./
'\ ('\
1.0
5
10
30
Ie. COLLECTOR CURRENT (AMPERES)
.1 III
Ic· 5A
Ie=IOA
/3=100
TJ = 25·C
/3= leilBI
TJ =25°C
Ie' 2OA
I
......J
0
~
10
'"
I-
'"w
....
/
I-
8
\
iw
\
\
6
W
..J
..J
ri:.
.... ..... 1-"
0
....
0
W
..J
/
/
I
/
i
/
/3=25
L
I
/3=10
d-' /
..J
4
~
..........
I"-
o
0
1\
1\
2
0
1.0
w
~
"
0.1
.01
30
10
Ie. COLLECTOR CURRENT (AMPERES)
)0
1.0
lB. BASE CURRENT lAMPE RES)
FIGURE 3. COLLECTOR SATURATION REGION
10.0
TJ =25°C
/3=le/ I BI
1
I
in
I-
..J
/
~
::'"
w
/
I
I
/3=25
J
'"o
I-
o
~
~
..... ~
.:::iii
in
/
Vj V/
iw
8 1.0
10.0
,
o
W
..J
FIGURE 4. VCE(SAT) VS. 'c. T J = 25°C
/3=)001 -//3=50
TJ=IOO·C
/3 =Ie/IBI
ui
/3=50
I
iii
w
r~\ ~\
FIGURE 2. DC CURRENT GAIN (V CE = 10V)
w
~
30
10
VeE (SATI. COLLECTOR· EMITTER (VOLTS)
....in
..J
8
5
)
10.0
12
'"o~
'\\ ~.
\ ~ \~
\\ ~\
I
'=
~A
~;\,
VTJ=-40·C
14
:;;
'"tl
./
/'
./
FIGURE 1. DC CURRENT GAIN (VCE = 2V)
~
~~
i--'" .... TJ'O·C
....../ i--'" -I"'"
./ /'
tf'
:I:
\~
I
~
V
- TJ=25·C
0
~,
V TJ e -40·C
,/
TJ=IOO·C
0
0
,~'\.
/'
/"
10
TJ=I~
:;;:
~
I-
z
~
o
/3=10
~
'"
W
lI-
~
iw
~~
w
en
.-:
ID
-
r-
r-'
10
30
Ie. COLLECTOR CURRENT (AMPERES)
-
-:: ::::: ~
/3= 10
/3=25
/3=50
/3=100
p-
30
10
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 6. VBE(SAT) VS. Ie. T J
FIGURE 5. VCE(SAT) VS. Ic. T J = 100°C
705
=25°C
TYPICAL CHARACTERISTICS
10.0
1000
I
TJ o 25'C
TJ"IOO"C
lI'Ic/lal
iii
......J
I---
o
~
:e
te
W
....
....
:E
w
w
U
Z
w
'"«
~
'";::
~
.,
V
k:::: ~~~
w
>
~
-... t"---
1i'10
11=25
11'50
11'100
~ r---..
U
~
<5
100
30
10
FIGURE 8. CAPACITANCE (CeBO)
1.0
10.0
TJ-25"C
TJ"IOO"C---TJ o I 5 0 ' C - - -
G
w
'"~
/
,
u
....
.' if
~
~. L"
....
....... ~
~
' .... .
te
....
u
tr
L' ,
'"
te
0
,,.
f
/"
z
:;:
__
a:
O.I
....
W
..J
..J
-
...-:=..,
.........
0
U
.01
",'
~
V
Vcc=250V
Ial,Ic/2O
III-Ic/IO
VaE --5V
t p '50"SEC
G
w
-
~
'"
~
/
~
~
w
te
a:
u
...-
te·
t
-
w
..J
..J
O. I
10
20
~w
N
3
:;
«
~
o
2
z
I
./
NOTE- NORMAUZED TO
t.@ 25"C FROM
FIGURE 12
I
~ ~ t:::
-
o ~I
...
-
I--
}tf
-
~
...
10
I
Vcc=250V
Ial'Ic/2O
182 =Ic/IO
VaE=-5V
t p =50"SEC
I-
'
I-~
-
t-"
-
---
-10
10.0
G
.- - f·
w
'"~w
1--
~
:;;
i=
'"iz
....
1-1. 1---',,::
t-
20
FIGURE 10. TURN-OFF TIME (RESISTIVE)
u
I-- _ _
1-1--l - I-
~~ I-~ 1-'"
~....---
10-
RaE"looon
RaE"loon
I--" 1--1--
.... I- l-
~
......~ "/::::
J
Ie. COLLECTOR CURRENT (AMPERES)
TURN-ON TIME (RESISTIVE)
1.,..0-- l-
4
1..--
-
8
w
a:
I..~
TJ=25'C
TJ"IOO'C--TJ o I50·C
td
>=
~
-.....
""'"
1.0
:::l
Ial=Ic/20
IaI"Ic/90 - - - TJ o 25"C
VCC"250V
tp=50"SEC
VaEoOV
5
"I"-
Ie. COLLECTOR CURRENT (AMPERES)
6
-......
f=
~
-
FIGURE 9.
'""
'"
z
i
~ ....
I
7
100
10
FIGURE 7. VBE(SAT) VS. Ie. T J = 100°C
:::l
U
r-....
Vee. COLLECTOR·BASE (VOL TSI
Ie. COLLECTOR CURRENT (AMPERES)
zw
r---t--.
~
RaE"looon
RaE"loon
RaE"lon
~
....z
w
a:
a:
RaE=ln
RaE"ln
~
a:
o
t;
~
I":
W
..J
..J
8
O. I
20
Ie. COLLECTOR CURRENT (AMPERES)
-
....
U
---
.. }
.......
1.0
:::l
RaE"lon
--
t--.
I
-- r----
........
-.....;.....
}
TJ=25"C--TJ= 100·C----ts TJ=150.C--VCE (CLAMP) =250 V
L=IOO"h
lal"lc/20
Ia2=Ic/10
tc VSE=-5V
~
1--
~
I-L...-
--'":"1..--
.....
L.---10
}f
20
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 11. NORMALIZED RESISTIVE
SWITCHING STORAGE TIME (R BE VARIATIONS)
VS. COLLECTOR CURRENT
FIGURE 12. CLAMPED INDUCTIVE
TURN-OFF TIME
706
TYPICAL CHARACTERISTICS
1.6
TJ=25°C
1.4
-::;
w
Ic·5A
Ic/I BI=20
VSE=-SV
CLAMPED INDUCTIVE
LOAD, L=IOO"h
VCE(CLAMP)= 250 V
/" IC=IOA
/" :,./
1.2
w
a:
0
1.0
en
w
./ ~
N
le·2OA
V
1.2
w
;'
O.S
Ic/IBI=20
VBE=-SV
CLAMPED INDUCTIVE
LOAD, L=IOO"h
VCE(eLAMP)= 250 V
1.4
0.4
2.0
O.S
1.0
I.S
2.0
RATIO,IS1/1S2
FIGURE 15. FALL TIME VARIATION WITH
FIGURE 16. CROSS-OVER TIME VARIATION
WITH 182
182
25
>="
I-
·C/W
1
~
u
oa:
~
o
LL
a:
~
10
III
Non ,JUMPER
I TO 2 (RESISTive)
, TO , (INOUCTlVE~92
-
.7
r------I- - --,
~
v
022
I
'/1
Ii II
-"I
I
..:
Iii
z
I
0.0
/1
D44VHI
.00
I
I
•
L------~r--~
RL =2M FOR GE6060, I, 2
·6VDC
1.0
B
r -......-~-O--!: DEVICE UNDER TEST
.I BI
I
270
N
....
z
CLAMP
GE
AII5f
//
::>
o
z
..:
:i
.t'
"250VDC
OLoTT CYCLE I
2.0
3.0
4.0
5.0
* =SELECT
RI FOR +ZI. r: }SEE SWITCHING
Rt FOR -%8..
VTM. INSTANTANEOUS FORWARO VOLTAGE (VOLTS)
TE&T CONDITIONS
FIGURE 21. SWITCHING TIME TEST CIRCUIT
FIGURE 20. FORWARD CHARACTERISTICS
708
HIGH SPEED
GE6251,2,3
NPN POWER DARLINGTON
TRANSISTORS
450-55G VOLTS
10 AMP, 125 WATTS
These devices are designed for use in high speed switching
applications, such as off-line switching power supplies, AC &
DC motor control, UPS systems, ultrasonic equipment and
other high frequency power conversion equipment.
CASE STYLE TO-204AA (TO-3)
r: H
.':'.~#----=t 'W"" ,,~,
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.47)
MAX
0043{1.09)
00381097)
DIA.-lI~
.358(9.09) MAX
426(10.821 MIN
,-
CASE TEMP
REFERENCE
POINT
.20(5.00)
0.162(4.09)
Q.1S{3.84J
2 HOLES
DEVICE CIRCUIT
maximum ratings (T C =25°C)
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)
Peak (Non-Repetitive)
Base Current - Continuous
Peak (Non-Repetitive)
Total Power Dissipation @Tc = 25°C
Operating and Storage
Junction Temperature Range
0.440(11.18)
0.420110.67,
(unless otherwise noted)
SYMBOL
VCSO
VCEO
VESO
IC
ICM
ICSM
Is
ISM
Po
GE6251
450
400
5
10
15
25
3
5
125
GE6252
500
450
5
10
15
25
GE6253
550
500
5
10
15
25
UNITS
Volts
Volts
Volts
3
3
A
5
125
5
125
Watts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
°C
R8JC
1.0
1.0
1.0
°C/W
TL
300
300
300
°C
A
thermal characteristics
, Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Ye"from Case for 5 Seconds
.
".
)n~.
.. ~
~.~.
709
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
I
TYP
MAX
UNIT
-
-
Volts
-
1
mA
200
mA
off characteristics
Collector-Emitter Sustaining Voltage
= .5A)
( clarno = VCEO Rated)
Collector-Base Voltage
(IC = 1.0mA)
(!);
GE6251
GE6252
GE6253
VCEO{sus)
400
450
500
GE6251
GE6252
GE6253
VC80
450
500
550
IC80
-
IE80
-
Collector Cutoff Current
(VC8 = VC80 Rated)
Emitter Cutoff Current
(VE8 = 1.5V, Ic = 0)
Volts
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 16
Clamped Inductive SOA with Base Reversed Biased
SEE FIGURE 19
on characteristics
DC Current Gain
(lc = 3A, VCE = 5V)
(Ic = 5A, VCE = 5V)
(Ic = 10A, VCE = 5V)
hFE
Collector-Emitter Saturation Voltage
(Ic = 5A, 18 = .5A)
(Ic = 10A, 18 = 2A)
VCE(sat)
Base-Emitter Voltage
(Ic = 5A, 18 = .5A)
V8E{sat)
60
50
30
125
170
160
-
-
-
1.0
1.15
1.5
2.0
V
-
1.75
2.5
V
-
0.2
.25
ILs
2.1
2.5
.2
1.0
2.35
.09
-
switching characteristics
Resistive Load
Rise Time
VCC = 300V, tp = 50 ILsec
tr
Storage Time
Ic = 10A, 181 = 1A, 182 = 2A
ts
Fall Time
tf
Inductive Load, Clamped
Storage Time
VCC = 300V, L = 100 ILH
ts
Crossover Time
Ic = 10A, 181 = 1A, 182 = 2A
tc
-
tf
-
Fall Time
.28
ILS
emitter-collector diode characteristics
Forward Voltage
IF = 10A
1.9
710
Volts
TYPICAL CHARACTERISTICS
100
1000
vc£"sv
VeE=IOV
...... i-""'"
z
TJoI50·Y ,.........
Cl
~
C
~
w
~ 100
L-o-;-J=O·C
g
'w
...
:J:
/
I-
Z
w
0:
0:
10
I-
...... .....-
0
~~"
....V
/'
:I:
5
I
10
1.0
30
5
I
(J=so
I
.L
~
/
..J
o
10
0:
W
\
,
~
w
\
0:
~ ·6
~
..J
..J
4
~
o
.01
ci:
o
~
8
..........
I-'"
v~
.... 1-::
..J
..J
1\
1\
2
V
lI-
.1.
I
L
f
~
W
B
r~\ ~\
(J=IOO
TJ = 2S O C
(J= leilSI
TJ =25°C
IC' 2OA
0:.
8
30
10
)0.0
..J
:ii
w
'\\ I'
FIGURE 2. DC CURRENT GAIN (VCE = 10V)
tii
lI-
~~,
VeE (SAT!. COLLECTOR· EMITTER (VOLTS)
,I III
Ie=IOA
~~
, l'~
\\ I~\
I-
~
..
/
VTJ=-40·C
FIGURE 1. DC CURRENT GAIN (VCE = 2V)
12
~~
...... f-""
/'
Ie. COLLECTOR CURRENT (AMPERES)
Ie=SA
~
./
'\ ~,~
I
...... .... TJ=O°C
TJ=2S"C
./ ./
~.
"'\""
TJ o-40"C
(4
/'
L
TJ'IOO"C
U
.........
/"
10
Cl
::J
V
//'
/'
J'
V
TJ=I~
C
~
. . . . .V I-"'"
TJ o 2!1"'
::J
V
~
TJoIOO·C
z
/
(J=2S
'/
I
(J= 10
~V
po-
1.0
w'
fl
"
O. 4 I
10
1.0
0.1
10
30
Ie. COLLECTOR CURRENT (AMPERES)
lB. BASE CURRENT lAMPE RES)
FIGURE 3. COLLECTOR SATURATION REGION
FIGURE 4. VCE(SAT) VS. Ic. T J
= 25°C
10.0
10.0
(J=IOOI --!(J=SO
TJ=IOO°C
(J =Ie/lsi
I
tii
I-
..J
a
/
~
0:
W
lI-
:ii
w
0:
a
l-
.,,1
v
_i--'"" ~ ~;;
W
..J
..J
81.0
---
/
TJ =2S 0 C
(J=le/Isl
I
I
I
I
(J=25
J
Vi
/
I l I/,
~
I-
..J
o
(J=IO
>
a:
w
lI-
~
W
W
Vl
«co
..-,,::::: Iliii= P'"'
t=
~
w
~
10
30
Ie. COLLECTOR CURRENT (AMPERES)
-
~~
~
~ 1-:1":
~
~
10
(J=IO
(J=2S
(J=so
(J= 100
30
Ie. COLLECTOR CURRENT (AMPERES)
FIGURE 5. veE (SAT) VS. Ie. T J = 100°C
FIGURE 6. VBE(SAT) VS. Ie. T J = 25°C
711
TYPICAL CHARACTERISTICS
10.0
1000
I
TJ "2S0 C
TJ.IOO°C
(j=IC/iBI
iii
...
1-
-............ -...
r-.... ...... 1"'-
o
:::
:ew
D:
w
........
U
Z
~
w
w
~
~
'";:
~
w
P
I-::
I
>'"
.... 1::;::: ;;.-:""
,
~
10
~
(j=10
P=2S
P=SO
(j= 100
~ I"'---
~
<5
100
10
30
VSE(SAT)
\(S. Ic. T J = 100°C
1.0
TJ=25"C
TJ= 100°C - - - TJ=150"C---
G
w
en
L
LL
/'
.3
Cl
z
,
'.' /,'
~
en
1/ ,'"
....
Z
w
=>
U
'-.
D:
0
....
...w
V
FIGURE 8. CAPACITANCE (CCBO)
10.0
Vee=2S0V
IBI=Ic/20
IB2 =le/IO
VBE=-SV
tp=SO,.SEC
L
O. I
_-
I-
r--
.3
Cl
z
r
~
~
w
1.0
U
U
o
\:j
- ... -
~-
..J
"!:,::;~
..J
-- ..
td
i
r:~GURE
~
f=
~
0:
~w
N
::;
..:
::;;
D:
o
Z
4
~
~ ...
/
.
3
1--"
.....
_
o
I/.~
2.:----,....G"::
-
...- ..
~:-:;~
.,......
FROM
FIGURE 12
10
....
r.:
l - I--
..
10.0
-l-----
:-
RBE"loon
RaE" Ion
RaJ;:=lon
RBE" In
RBE'lll
I
::;;
.-
.-~-
f=
-......
~
z
:;:
~
....
z
.......
1.0
W
=>
U
~
D:
§
~
r--...
W
..J
..J
8
20
TJ=25"C--TJ= 100·C----ts TJ=1500C--VCE(CLAMP)=250V
L=IOO,.h
}
tc
D:
D:
Ie. COLLECTOR CURRENT (AMPERES)
}
~
Cl
O. I
10
I
--
w
1-
----
I-
G
w
.3
U
;---',:: RBE"looon
........
~~r-
RBE'lOOon
RBE"loon
---
,.....1-
20
. FIGURE 10. TURN-OFF TIME (RESISTIVE)
en
I
i!........ V'
,.. 1-11-1~
2~Vl-.....
I
to@) 2S"C
[..-- I--'i-'
w
Vce=2S0V
IBI= Ic/20
IB2=Ic/10
VaE=-5V
t p =50,.SEC
Ie. COLLECTOR CURRENT (AMPERES)
NOTE' NORMAUZED TO
IBI"Ic/gO - - - - TJ=25 c C
Vcc=250V
tp=50"SEC
VBE=OV
5
../"
I-f-
20
9. TURN-ON TIME (RESISTIVE)
1m' Ic/20
6
_t""
o.1
10
Ie. COLLECTOR CURRENT (AMPERES)
7
~
8
!::..-"
.0 I
J
}tt
....-
D:
w
0
-
::;)
.-
...---~,
--.....
r--.. -- ..
-........
TJ=2S0C
TJ=IOO·C---TJ =150"C
D:
D:
;'
~1E'
..J
'---
G
w
en
~
i~ " ...1/ '" !--'" i-"I-"
D:
D:
u
},
L' ,
r
u
....
100
VCB. COLLECTOR·BASE (VOLTS)
Ie. COLLECTOR CURRENT (AMPERES)
FiGURE 7.
r--...
I
- ...-
-- -
~
............
I"- I"---
...-
....
~
1-::.--
~---
~
10
!BI=lc/2O
la2=lc/10
VaE=-5V
}t
20
Ie. COLLECTOR CURRENT (AMPERES)
fiGURE 11.
NORMALIZED RESISTIVE
TIME· (R Be VARIATIONS)
'IS. COlLECTOPl CURRENT
FIGURE 12. CLAMPED INDUCTIVE
TURN-OFF TIME
SW!1iCH~~~G BTCAfl.G~=:
712
TYPICAL CHARACTERISTICS
1.6
1.6
TJ=25°C
Ic/Isl=20
VSE=-5V
CLAMPED INDUCTIVE
LOAD, L=IOOl'h
VCE(CLAMP) =250 V
1.4
£w
... V
i=
w
~~
(!J
<{
a:
1.0
0
....
w
:::i 0.8
IC' 2OA
<{
IC'IOA
a:
- V" I-""'
~
,;'
I-- IC=20A
E
w
::;;
~
<{
u.
,
1.0
0
w
N
:::i
<{
::;;
a:
0
z
0.4
1.0
0.5
1.5
0.8
c=20A
Ic=IOA
0.6 I c =5A
0.4
2.0
~
IC'SA
Ic· IOA
o
~ :.:::: ....... Xc 20A
&: ~ I--"'"
1.2
...J
...J
I C=5A
0.6
TJ=25°C
Ic/I SI=20
VBE=-5V
CLAMPED INDUCTIVE
LOAD, L=IOOl'h
VCE(CLAMP)=250 V
i=
V. V
::;;
0
1.4
..,- ~ '7
N
z
~
...4 ~
til
-
VV
1.2
::;;
IC'SA
IC=IOA
~
~
Ae:-'
~
AW
~
0.5
2.0
1.5
1.0
IC. COLLECTOR CURRENT (AMPERES)
FIGURE 13. STORAGE TIME VARIATION
WITH 182
FIGURE 14. FALL TIME VARIATION WITH 182
1.6
1.4
~
w
::;;
TJ=25°C
Ic/I SI=20
VSE=-5V
CLAMPED INDUCTIVE
LOAD, L=IOOl'h
VCE(CLAMP)= 250 V
./
./. ........... ::::::
1.2
i=
..,-~ ~
a:
w
>
0
,p;
1.0
til
til
N
:::i
<{
::;;
a:
0
z
~
Ic=20A
Ic=IOA
Ie=5A
100 _
rr-
~
0.8
Ic'5A
Ic'IOA
0.6 Ic'20A
__
iii
w
a:
w
c..
::;;
:!
....2
w
a:
a:
=>
u
a:
~
0
a:
u
0
w
--~
?'
0
....
u
~~
1.0
W
...J
...J
IcORICM L I M I T - - - THERMAL UMIT-- - - SECOND BREAKDOWN
LIMIT-----·25·C
0
V
U
jj
0.4
1.0
0.5
1.5
2.0
VCE. COLLECTOR EMITTER VOLTAGE IVOLTS)
FIGURE 15. CROSS-OVER TIME VARIATION
WITH 182
FIGURE 16. FORWARD BIAS SAFE
OPERATING AREA
DIODE CHARACTERISTICS
·C/W
1
-
\
w
0
II:
W
U
W
...J
...J
\
0
s/
5
~
0
200
300
1"'.:;"'..., DE'~
~~""G
):1
7~~
.... ~~a
..........
~;q~
~
40
30
0.
20
"~~251
"
100
........~/f90
a:
10
f-
u
70
u.
\
i"'-- ~co""ol
"" "'
80
U
w
a:
a:
::J
u
a:
~ ..........
90
~~2
;92
153
400
10
_
o
o
500
20
40
60
80
FIGURE 20. POWER DERATING
FIGURE 19. REVERSE BIAS SAFE
OPERATING AREA
'SliDe
-+Z50VDC
, % D!"TY CYCLE 1
R,
L:l00~
h
(NON INDUCTIVE)
Non
JUMPER
G'
AI39E
I Hl 2 (RESISTivE)
2 lO :5 (INDUCTtVE~?2
r------I-----,
022
V
CLAMP
i
-IS, '
-- I
B
Iaz
,
I
DEVICE UNOER TEST
+I81
I
I
I
I) S
044VHI
,
L------~r--~
R L' 30.11. FOR GE6251, 2, 3
RL' 2o.n. FOR GE5060, I, 2 B GE6060, I, 2
-slice
120
Te. CASE TEMPERATURE I'C)
veE, COLLECTOR EMITTER VOLTAGE, CLAMPED,(VOLTS)
270
100
" '~
*::: SELECT
RI FOR +%81' }SEE SWITCHING
R2 FOR -I'BI. TEST CONDITIONS
FIGURE 21. SWITCHING TIME TEST CIRCUIT
714
"
140
160
MJE13004
NPN POWER TRANSISTORS
300 VOLTS
4 AMP, 75 WATTS
Designed for switching regulator, DC-DC converter, AC-DC
inverter, high voltage, high speed switching applications.
NPN
COLLECTOR
Features:
• VCEO(sus)
=300V (Min).
EMITTER
• VCEV = 600V blocking capability
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Excellent switching time: tr = 0.7 J.LS (Max.),
tf = 0.9 J.LS (Max.)
.404(10.261
.38019.651
. ~ ~~:~.~~\
..j~'
I
.
,
- -t
-.
1
/t-
.19014.831
'17014'321~
1
.---.
.26516.731
.24516.221
•
-+--I-----1f[--+-.....,
CASE
TEMPERATURE
REFERENCE
/
POINT
:~~~:~:~;\----,
+
.. 1144511133·.6588110IA.
~
~591
.gg~l~di~1
. I 3013.31
TERM.l
t
1ffi-llllr!Ti---,
TERM.2
.05511.391
.04811.221
.500112.7IMIN.
.05511.391
.045(1.141
TERM.3
.0331~.841
.02710.691
.1~.10512.671
.055(1.391-/
.04511.141
maximum ratings (TA
.10712.721
.08712.211
~ •. 09512.411
\+-'
I--
.21015.331
.19014.821
.021(0.531
.01510.381
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
SYMBOL
VCEO
VCEV
MJE13004
300
600
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Pulse
VESO
Ic
ICp
9
Volts
4
8
A
A
Base Current - Continuous
Pulse
Is
Isp
2
Emitter Current - Continuous
Pulse
Collector Power Dissipation
Derate above 25° C
TA=25°C
'E
IEP
Pc
6
12
2
16
Watts
mW/oC
Tc = 25°C
Pc
75
600
Watts
mW/oC
TJ, TSTG
-65 to +150
°C
Col/ector Power Dissipation
Derate above 25° C
Operating and Storage
Junction Temperature Range
715
4
A
thermal characteristics
Thermal Resistance, Junction to Case
R8JC
1.67
°C/W
Thermal Resistance, Junction to Ambient
R8JA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
TL
275
°C
electrical characteristics (T c
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
VCEO(sus)
I
TYP
MAX
UNIT
300
-
-
Volts
'CEV
-
-
1
5
mA
lEBO
-
-
1
mA
off characteristics(1)
Collector-Emitter Voltage
(Ic =10mA, IB =0)
Collector Cutoff Current
(VCE =600V, VBE =-1.5V)
(VCE =600V, VBE =-1.5V, Tc =100°C)
Emitter Cutoff Current
(VEB =9V, Ic =0)
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 11
Clamped Inductive SOA with Base Reversed Bias
RBSOA
SEE FIGURE 12
on characteristics(1)
DC Current Gain
(IC =lA, VCE =5V)
(Ic =2A, VCE =5V)
Collector-Emitter Saturation Voltage
(IC =lA, IB =0.2A)
(Ic =2A, IB =0.5A)
(Ic =4A, IB =lA)
(Ic =2A, IB =0.5A, Tc 100°C)
Base-Emitter Saturation Voltage
(IC =lA, IB =0.2A)
(Ic =2A, IB =0.5A)
(Ic =2A, IB 0.5A, Tc =100°C)
8
-
60
40
-
-
-
V
-
0.5
0.6
1
1
-
1.2
1.6
1.5
V
-
-
Cob
-
55
-
pF
fT
4
--.
-
MHz
td
-
-
0.1
p's
-
0.9
-
4
tc
-
0.9
tf
-
0.16
-
hFE
VCE(sat)
10
-
=
VBE(sat)
=
dynamic characteristics
Output Capacitance
(VCB =10V, IE =0, f =0.1 MHz)
Current Gain - Bandwidth Product
(IC =500mA, VCE =10V, ftest =1.0 MHz)
switching characteristics
Resistive Load
Delay Time
Rise Time
Storage Time
=125V, IC =2A
IB1 = -IB2 =0.4A, tp =25p.s
Duty Cycle < 1%)
(VCC
tr
t---·ts
Fall Time
tf
0.7
4
Inductive Load, Clamped
Storage Time
Crossover Time
=2A, \tclamp =300V
IB1 =O.4A, VBE(off) =-5V, Tc =100°C)
(IC
Fall Time
(1) Pulse Test: Pulse Width - 300JLs Duty .Cycle :5 2%.
716
tsv
p's
en
t-
100
TJ
10
~
50
z
--
=12SoC
t:I
t-
z
30
::::l
20
w
a:
a:
<.:I
<.:I
2:-
~~
...W
10
=2 V
~ I 1"'7 I ~fE = 5 ~
5
I I I III
I
0.04
0.06
0.1
.....
:i
~
o
I'" t:::. ~ ~
VCE
'"-
0.4
t-
"
:::: 0.4
o
<.:I
W
<.:I
.
0.6
0.8
>
0.03
I I I II'I
~ 1. 1
I- -
-
'.
~
>
0.9
w
t-
25°C
0.7
...
W
en
.2;;'C_
h
I
<
150 C
:. 0.5
'"
>
0.3
0.04 0.06
1
0.1
0.2
~
V CI.:
I--"' ~ 'J
I-'"
-
V
I
~ I-
-
I-I -
/
V
->
::;;-
V
a::~
TJ = -55°C
WW
~ !:i 0.25
250
'"'0
~>
.....
o
...
0.15
>
0.6
0.05
0.04
4
2k
t-
I---TJ = 150°C
Z
w
a:
a:
100
::::l
<.:I
125°C
a:
100°C
t-
1~OC
Q
u
w
....
....
ID
Q
510°C
u
~
2Soc
0.1
-0.4
V- i /
./
1/
I
I
I
I
I
'11
I
1k
LL 700
---
..e
'----
I
1. 1.
I
II
0.1
'"'~
13
;t
<
I
-
0.4
0.2
lS00C
4
0.6
Cib
500
300
200
~Ob
;::- 100
70
50
I
30
20
0.3
REVERSE
FORWARD
-0.2
0
+0.2
+0.4
VBE. SASE·EMITTER VOLTAGE (VOLTS)
-
w
J
1/
./
/
~
FIGURE 4 - COLLECTOR-EMITTER SATURATION VOLTAGE
10 k
I
j
/
~/ ~ V
I-- ~ r- k:::: I:=::~
0.06
h t'l
W
IC. COllECTOR CURRENT (AMP)
FIGURE 3 - BASE-EMITTER VOLTAGE
1k
3
~
~!J
Ie. COLLECTOR CURRENT (AMP)
<
.3
2
0.1
~ ~ 0.35
V./
..
1/
0.5
"'~~
<.:I
/
1/
0.3
ICIIB = 4
w
u
~VCE=250V
0.2
0.45
~
l- I--'I-'
0.4
1'1.
r--..
r-.
;::
<
./
J
~
[\..
0.1
0.05
0.55
o
TJ ='-5S C
a:
iw
""
.'
I
t:I
1\
FIGURE 2 - COLLECTOR SATURATION REGION
VBE(sat) @ IC/IB = 4
VBE(on) @ VCE = 2 V
w
~
'.
,
\
1\
\
lB. BASE CURRENT (AMP)
FIGURE 1 - DC CURRENT GAIN
~
.....
4A
0
4
IC. COllECTOR CURRENT (AMP)
1.3
3A
1 1\
.\
'"'w
::.....
0.2
1
w
t-
~~
-5SoC
2A
\ IC = 1 A
o
;. 1.2
r-..
Q
.s=
'"<~
r-I'-
TJ = 25°C
\
\
1.6
w
I...
........ ~
lsoc
:;(
\
.....
o
+0.6
-""'"
0.5
-3
5
10
r--.
30
50
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 5 - COLLECTOR CUTOFF REGION
FIGURE 6 - CAPACITANCE
717
--
100
to-300
./
-""'"
0.5
90% Vel amp ~ 90%IC
!sv
IC/
VCC= 12SV= F
Ic/la= S
TJ=25 0 C ~ t -
.- Vel amp
" '"
V
=t2
'.
ICp~
!rvfl
~Ifi- f-!!i-
I~ J-!e --\ f-
V
VCE
'"
' a -I - 90%lal
... 0.1
-" 0.05
./
.......
1/
Id@ VBE(olf) = 5 V
,........
-- --\-, --- --- --- --- -
0.02
-
~
"-"'"
Ir
........
"'"
:E
j:
10%.........
~
2%IC
IC pK -
10% Velamp
~
0.2
'Or
3
0.01
0.04
0.1
TIME
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
0.4
0.2
IC. COLLECTOR CURRENT (AMP)
4
2
FIGURE 8 - TURN-ON TIME
RESISTIVE
SWITCHING
PERFORMANCE
.
.
_
10
VCC = 12S V
Ic/la = 5
TJ = 2SoC
Is
5
r--.....
,
2
......
'Or
...
-" O.S
3
,,0mIlllEEIIII
0.7
~ 0.5 D= 0.05
~~i
0.3
H 1 It+HtftHH--H+HHI-+++I-HoWtt:~~F+-I+HHlH-Hl-Hf.HHI
r!
0.2
~.J
~
H)T-+
l+HfflF=t+++H-HbIo~~~=lUI~~~um...w.+lf.I.UUI
....iii
0.1
Ii!
0.05
!
......
:E
j:
+
r....
ZlIJc(11 = r(11 RIIJC
~~0~"~lli~~I~""~~RIIJC="67'CIWMAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME @II
TJ(pk) - TC = P(pkl ZeJc(11
:;j 0.07 1-0.05
I'
i
~
If
0.2
0.1
JUl.-'-
r I L..
I::: ~-I'""iq..TT~H-mmnE-PII-i'Lil-'E+-+I-l+J.~-I-1-+-U ~Il:~ P~I
0.3
0.1
0.04
L~
1-o.~-HbIoI1mJool!;jq--l-~-Il#--1-~-I- DUTY CYCLE. D= 11112 H-I--++-H+IH
j!:
~
0.01 0.02
4
0.2
0.5
IC. COLLECTOR CURRENT (AMP)
0.03
0.05 0.1
FIGURE 10
FIGURE 9 - TURN-OFF TIME
0.2
0.5
1.0
2.0
5.0
TIME (ml)
10
20
1tIt-+++t-ttttlt
50 100 200
500 10k
TYPICAL THERMAL RESPONSE [(Z8JC(t)]
The Safe Operating Area Figures 11 and 12 are
. specified ratings for the. devices under the test conditions shown.
10
it'
4
::IE
:E
S
....
...acz
2
de
....
"'
!\.
I" 500"s I-- f'Iol
I\."\.
0.5
lms
...
0.2
I"Smn, I\.
Q
0.1
u
ac
Q
....
u
..J
..J
S
I-
...zoc
3
:::>
u
" "- ."'"\."\
u
~0.05
"
oc
0
....
u
\ \'
\' ~,
2
........
\
.....
0
u
MJEI3DD4-
0.02
0.01
S
10
20
30
50
70
I
100
I
I
200
...
.e
"
MJE13004
o
o
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
100
200
300
'"
'-
u
300 400 500
Te ';lbo oc_
lal =2.0 A
1\.'
oc
ac
::I
\.
~\\
~' I\.
it'
5
400
,
~ VaE(off) =9 V
~
"'-
~
f"....
500
SV
3V
I.S V
600
700
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE (VOL TS)
FIGURE 12- REVERSE BIAS SWITCHING
FIGURE 11 - FORWARD BIAS SAFE OPERATING AREA
SAFE OPERATING AREA
718
800
MJE13005
NPN POWER TRANSISTORS
400 VOLTS
4 AMP, 75 WATTS
Designed for switching regulator, DC-DC converter, AC-DC
inverter, high voltage, high speed switching applications.
NPN
COLLECTOR
~'-EQ
Features:
• VCEO(sus} = 400V (Min).
EMITTER
• VCEV = 700V blocking capability
=
• Excellent switching time: tr 0.7 J.l.S (Max.),
tf = 0.9 J.l.s (Max.)
.404110.26J . ~ ~~\~.;~II
.38019.651.t· I '
.19014.831
.17014321ft .05511.391
.
1
.04811.~21
.--.
f
I---+--I-----+r-'.......,
I-L.
__ +
.
.26516.731
.24516.221
•
.35519.021
.32518.251
~
.-tr;'~III)o1>i+--,
~
OINT
.22015.591
~51
.00110.0251
~.31
TERM.l
CASE
TEMPERATURE
REFERENCE
.500112.7IMIN.
TERM.2
TERM.3
.0331~.841
.02710.691
.055(1.391
.1
.04511.141---'
maximum ratings (TA = 25 0 C)
_ .10712.721
.08712.211
.1ih.J--.l0512.671
~ •. 09512.411
1+-"
j.-
.21015.331
.19014.821
.021(0.531
.01510.381
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
SYMBOL
VCEO
VCEV
MJE13005
400
700
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Pulse
VESO
Ic
Icp
9
4
Volts
Base Current - Continuous
Pulse
Is
Isp
2
4
A
Emitter Current - Continuous
Pulse
Collector Power Dissipation
Derate above 25° C
6
12
2
16
A
TA =25°C
IE
IEP
Pc
Watts
mW/oC
=25°C
Pc
75
600
Watts
mW/oC
TJ. TSTG
-65 to +150
DC
Collector Power Dissipation
Derate above 25° C
Tc
Operating and Storage
Junction Temperature Range
719
8
A
thermal characteristics
ROJC
1.67
°CIW
Thermal Resistance, Junction to Ambient
ROJA
62.5
°CIW
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
TL
275
°C
Thermal Resistance, Junction to Case
electrical characteristics (Tc= 25° C)
(unless otherwise specified)
I SYMBOL I
MIN
VCEO(sus)
Collector Cutoff Current
(VCE = 700V, VSE = -1.5V)
(VCE = 700V, VSE = -1.5V, Tc = 100°C)
Emitter Cutoff Current
(VEB = 9V, Ic = 0)
CHARACTERISTIC
I
TYP
MAX
UNIT
400
-
-
Volts
ICEV
-
-
1
5
mA
lEBO
-
-
1
mA
off characteristics(1)
Collector-Emitter Voltage
(IC = 10mA, 18 = 0)
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 11
Clamped Inductive SOA with Base Reversed Bias
SEE FIGURE 12
on characteristics(1)
DC Current Gain
(IC = 1A, VCE = 5V)
(Ic = 2A, VCE= 5V)
Collector-Emitter Saturation Voltage
(IC = 1A, Is = 0.2A)
(Ie = 2A, Is = 0.5A)
(Ie = 4A, Is =1A)
(Ie = 2A, IB = 0.5A, Te = 100°C)
Base-Emitter Saturation Voltage
(Ie = 1A, Is = .2A)
(Ie = 2A, IB = .5A)
(Ie = 2A, Is = .5A, Te = 100°C)
hFE
VCE(sat)
10
8
-
-
60
40
-
-
0.5
0.6
1
1
V
-
-
-
-
-
1.2
1.6
1.5
V
Cob
-
55
-
pF
fT
4
-
-
MHz
-
-
0.1
,...s
-
0.7
-
0.9
-
-
0.9
0.16
-
VSE(sat)
-
dynamic characteristics
Output Capacitance
(VCS = 10V, IE = 0)
Current Gain - Bandwidth Product
(Ie = 500mA, VeE = 10V, ftest = 1.0 MHz)
switch i ngcharacteristics
Resistive Load
Delay Time .
(Vee = 125V. Ie = 2A
td
Rise Time
IS1 = -IS2 = OAA, tp = 25 ,...s
tr
Storage Time
Duty Cycle < 1%)
ts
Fall Time
tf
4
Inductive Load, Clamped
, Storage Time.
Crossover Time
-
(IC= 2A, Vcl amp = 300V
tsv
IB1 = O.4A, VSE(off) = -5V, TC = 100°C)
Fall Time
tc
tf
'.
(1) Pulse Test: Pulse Width - 300~s Duty eyc,le :5 2%.
720
4
,...s
v;
100
TJ = 12SoC
70
~
50
z
«
'"z
lsoc
I-
...
30
::>
u
u
20
.c
10
-a:
a:
......
.......
-
2!
r- I ...
~
bo
........
(}.D4
0.06
i
~ ~,
~
o
~ ~~
.........
VCE=2V
VCE=SV
I I I III
......
0.4
(.)
I'
W
u
>
0.4
"
t.)
LU
o
0.2
0.6
4
...
~
...
-
-
I
I
I
VSE(sat) @llc/le ; 4
VSE(on) @l VCE = 2 V
1. 1
'"«
I
I-
~
>
2SoC
LU
~ 0.7
-L... _
...en
w
2~_
ISD~C
«
:. O.S
-
.......
V
l - I-
>
0.3
0.04 0.0&
~~
~ c::
V
cC
V "'"
~~
~
~ ~
~ !;
0.1
O.OS
Z
I"
::>
0.4
0.&
4
1
4
~
I-
/1//
0.2sI-H++++----lI--+----lr-+-+-H-+++----:
~p..r~
/V~+--I
I
25 0 C. . / V .....
FIGURE 4 - COLLECTOR-EMITTER SATURATION VOLTAGE
w
~
~
0.1
-0.4
"'"
-
12SOC
7~OC
/
I
./
I
/
-
REVERSE
FORWARD
0
1
J
I
I
/
25°C
-0.2
/
J.
Cib
1k
I
u::- 700
500 C
~
I
J
/
/
Q
u
J
/
100°C
10
/ j II
t-H-t-t+t--1r-t--1'--t-t-t-t-+ TJ = -S50C
Ie. COLLECTOR CURRENT (AMP)
I
/
I
Q
3
0.3SI-H-I-H-+--1I--+--lr-+-+-H-+t+---I-+---:/N.,l+i
2k
100
0.7
O.OS Ll..-I-L..u...l---JI--.l.---JI--.l.--'-:LJ..-U...l-__'---:--__L..-..J
0.04 0.06
0.1
0.2
0.4 0.6
2
4
>
0.2
I---TJ; IS00C
I-
O.S
0
~VCE=2S0V
3
0.3
U
10k
...a:
a:
...a:
...
0.2
_~+-~C~B~=T---~+---~~~+4~4-__+-1-__+-~
IC. COllECTOR CURRENT (AMP)
1k
:'\,.
r--...
_ UJ
FIGURE 3 - BASE-EMITTER VOLTAGE
C
~
~
8.; 0.'SI-I-+++++--+-+--t--::::J1oo--t4"":J;.""-t".P""'~~+-+--+-I
L--!----~ I,,:::I::=~
IS0 C
i--'" r--""
I
0.1
~
0.45I-H-I-H-~-l--+--l--+-HH-+t+--""I-+---il-i~
~ '.L
I
II>
~
cl
cn _
... ""./
~-
I-
~
k....- C6
~
I
II:
I-
u
a:
0.5
" , ,,500
" 'I..
......
"
"
0
....
u
w
...J
...J
0
~s
r--
....
w
a:
a:
a:
o
....
e..>
.~
" I'.. :'\.,
0.1
\ \\
\ \ r\.'"
:::>
u
,,5 ms ,,:'\.
0.2
\\\i\.
z
1 ms
w
...J
...J
\
o
u
e..>
~ 0.05
TC <; lOODC_
lSI < 2,0 A
,\\
~
-
I
\.
a:
:;;
..:..
0.02
MJEI300~-
0.01
5
10
20
30
50
70
I
100
I~ -
a
a
I
200
300400500
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
M~E
100
200
300
13005
,'"
''""
400
~~(Off)=9V
~
~~
-....,... 5 V
f'....
SOD
.......
600
3V
1.5 V
100
800
VCEV, COLLECTOR EMITTER CLAMP VOLTAGE (VOLTS)
FIGURE 12- REVERSE BIAS SWITCHING
FIGURE 11 - FORWARD BIAS SAFE OPERATING AREA
SAFE OPERATING AREA
722
MJE13006
NPN POWER TRANSISTORS
300 VOLTS
8 AMP, 80 WATTS
Designed for switching regulator, DC-DC converter, AC-DC
inverter, high voltage, high speed switching applications.
NPN
COLLECTOR
Features:
• VCEO(sus)
• VCEV
=300V (Min).
EMITTER
=600V blocking capability
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Excellent switching time: tr = 1.5 j.LS (Max.),
tf = 0.7 j.LS (Max.)
.404(10.26)
. ~ ~~\~~~\
I·
I-L
.190(4.831
.170(4.32Irt .055(1.391
1
.04811.221
.38019.651~·
__ +
.--.
_ -.
.265(6.731
.245(S.221
1
•
J---t---i-----l,[--.i--~
.
+
: ::~:~:~~:DIA.
CASE
TEMPERATURE
REFERENCE
, . / POINT
:~~~\~.g~:----,
~
~591
.gg~l~diJI
.130(3.31
t
TERM.l
r.l111114T+--,
TERM.2'/
TERM.3
.0331~.841
.027(0.S91
.!h.-r--.
.107(2.721
.087(2.211
105 (2.S7 1
~ .:o95i2.4f1
.055(1.391
.1
.04511.141 ---.,
maximum ratings (TA = 25° 9)
.500(12.7JMIN.
.Q55(1.391
.045(1.141
1--.
I+-
.210(5.331
.190(4.821
.021 (0.531
.01510.381
(unless otherwise specified)
MJE13006
300
600
UNITS
Volts
Volts
9
Volts
A
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
SYMBOL
VCEO
Emitter Base Voltage
Collector Current - Continuous
Pulse
VESO
IC
ICp
8
16
Base Current - Continuous
Pulse
Is
Isp
4
8
A
Emitter Current - Continuous
Pulse
Collector Power Dissipation
Derate above 25° C
12
24
2
16
A
TA=25°C
IE
IEP
Pc
Watts
mW/oC
Tc = 25°C
Pc
80
640
Watts
mW/oC
TJ, TSTG
-65 to +150
°C
Collector Power Dissipation
Derate above 25° C
VCEV
Operating and Storage
Junction Temperature Range
723
thermal characteristics
ROJe
1.S6
°CIW
Thermal Resistance, Junction to Ambient
RBJA
62.S
°CIW
Maximum Lead Temperature for Soldering
Purpose: W' from Case for S Seconds
TL
27S
°C
Thermal Resistance, Junction to Case
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
VeEO(sus)
Collector Cutoff Current
(VCE = 600V, V8E = -1.SV)
(VCE = 600V, V8E = -1.SV, Te = 100°C)
Emitter Cutoff Current
(VE8 = 9V, Ie =0)
CHARACTERISTIC
I
TYP
MAX
UNIT
300
-
-
Volts
leEV
-
-
1
S
mA
IE80
-
-
1
mA
off characteristics(1)
Collector-Emitter Voltage
(Ie = 10mA, 18 = 0)
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 1
Clamped Inductive SOA with Base Reversed Bias
SEE FIGURE 2
on characteristics(1)
DC Current Gain
(Ie = 2A, VeE = SV)
(Ie =SA, VeE = SV)
Collector-Emitter Saturation Voltage
(Ie = 2A, 18 = O.4A)
(Ic = SA, 18 = 1A)
(Ie = 8A, 18 = 2A)
(Ie = SA, 18 = 1A, Tc = 100°C)
Base-Emitter Saturation Voltage
(Ie = 2A, 18 = O.4A)
(Ic =SA, 18 = 1A)
(Ic = SA, 18 = 1A, Tc = 100°C)
8
S
-
60
30
-
-
1
2
3
3
V
-
-
1.2
1.6
1.S
V
Cob
-
90
-
pF
fT
4
-
-
MHz
tel
-
-
0.1
,.,.s
-
1.S
0.7
-
2.3
-
0.7
hFE
VeE(sat)
VSE(sat)
-
dynamic characteristics
Output Capacitance
(VC8 = 10V, IE =0, f = 0.1 MHz)
Current Gain - Bandwidth Product
(Ie = SOOmA, VeE = 10V, ftest = 1.0 MHz)
switching characteristics
Resistive Load
Delay Time
(Vee
=12SV, Ie =SA
Rise Time
181 = -182 = 1A, tp = 2S ,.,.s
tr
Storage Time
Duty Cycle < 1%)
ts
Fall Time
tf
3
Inductive Load, Clamped
Storage Time
Crossover Time
Inductive Load (Ie = SA,
Vcl amp = 300V, 181 =1A,
tsv
V8E(Off) = -SV, Tc = 100°C)
tc
(1) Pulse Test: Pulse Width -300l's Duly eycle :5 2%.
724
-
,.,.S
20
l-
I--
I--
.+-~
I--
10
a:
::E
$
ex:
ex:
8
1 ms
I-
ffi
101~ ~
')..
100,,5
5
DC 1"" ......
2
r-...
1"-
$
"-
i'.
::>
ex:
"
- -
::
0.05
I\\.
~~
TC';; 1000 C
I---IBI = 2.5 A
\\' ~
'\ ."-.
.'\.. '"
MJE13006
w
-"
-"
0
"'
4
t.>
THERIMAL LIMIT
........
- - - BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELDW RATED VCED
MJE13006
I
I I I
I I
I
I
200
10
20
30
50 70 100
~0.1
6
0
le..>
TC = 25 0 C
o
~
a:
::;;
t.>
:5 0.5
t;
j 0.2
10
.~_-l
~J. I
c.3
2
I
300
500
100
VCE. COLLECTOR - EMITTER VOLTAGE (VOLTS)
300
200
400
'"
~VBE(off) = 9 V -
~
-............: 3.
5. V
V
1.5 V
700
600
500
800
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE (VOLTS)
FIGURE 2 - REVERSE BIAS SWITCHING SAFE OPERATING AREA
FIGURE 1 - FORWARD BIAS SAFE OPERATING AREA
The Safe Operating Area figures shown in Figures 1 and 2
a~e
specified ratiflgs for these devices under the test conditions shown.
1.0
-..;~
ex:
rf".,
0.8
~
o
l-
t.>
«
u..
C>
C
w
r- ............
0.6
--- ---
"-
THERMAL
DERATING
~ 0.4
o
ex:
w
;;:
a..
-r--.
......
~
'"~
o
SECOND BREAKODWN
DERATING
"i"-.
0.2
........
FIGURE 3 -FORWARD BIAS POWER DERATING
T1J 1- 1500
<
0
t--
w
ex:
ex:
l'-.
K
OC
t.>
W
~
10
-55 0 C
I
8
'"
FIGURE 4 TYPICAL THERMAL RESPONSE [(ZOJC(t)]
0.3
0.5 0.7
-,
~
w
C>
\
~
"
C>
>
a:
I'-- '\ f\
r-
IC= 1 A
5 A
3 A
w
ci:
o
-
\
~
t.>.
w
j
o
'"
5
\
O.B
l-
~
0.4
\
BA
\
w
'"
2 ., ,,3
1.2
lI-
:E
TJ = 25 0 C
-\
1.6
«
·1
0.2
0.3
C>
VCE = 5V .
4
0.5
160
I--...
6
0.1
0
~
b
::>
2:.
a:
'2!
t.......
z
C>
IZ
:IE
......
140
.100
120
60
80
TC. CASE TEMPERATURE (DC)
40
-
,
""-
40
..
N
::;
0.7
,
,
\
""-
~
,.
t.>
f\
,f"... f....
t-- I -
W
t.>
>
10
°
0.050.0l 0.1
IC. CDLLECTOR CURRENT (AMP)
0.2
0.3,.
0.,5
0.,7
2,
3
IS. BASE CURRENT (AMP)
, FIGURE 6 - COLLECTOR SATURATION REGION'
FIGURE 5 -DC CURRENT GAIN
725
1.8
0.7
!
1.6
0.6
c;:; 1.4
~ 0.5
Ic/la=3
I....I
~ 1.2
u.o
TJ = -55°C
S
0
1--"250C' - ' "
'"
>' 0.8
0.6
!--'-
0.4
0.1
0.2
--0.3
0.5
.....
......
t:::Jo:c
---
,.......
i..-' ......
V
~ 0.4
u.o
'"~
"'"
TJ = - 55°
0.3
o
..... r-""
>
>' 0.2
V
3
0.2
10
_
_
.....
r--TJ = 1500C
Z
100°C
75°C
a:
:=u
25°C
0.7
2
3
10
FIGURE B - COLLECTOR·EMITTER SATURATION VOLTAGE
I
,
I
.e
u.o
~ 500
u
I
I
./
125°C
~ 100
1/ I I
1/ 1 I V
/
I
lK
I-
150°C
~
10K
~ VCIE = 250 lV
0
.....
0
.....
c{
r-tc-' I---
>
M
"!
I"
--
VeE
>
rt I--\-t li .....!-tti.....
/10%
Vclamp
IS-
trv
1\90% ICM
0
III
~
~
10% ........
ICM - 2%~
Ie
W
Z
Cl
a:
a:
~
w
--- - --- -
c{
oJ
a
:J
u
>
....- ~
Ie
veE
TIME
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
TIME
20 ns/DIV
FIGURE 14 - TYPICAL INDUCTIVE SWITCHING WAVEFORMS
lat 300 V and SA with ISl = 1 .SA and-VSEloffl = 5 VI
727
---
728
MJE13007
NPN POWER TRANSISTORS
400 VOLTS
8 AMP, 80 WATTS
Designed for switching regulator, DC-DC converter, AC-OC
inverter, high voltage, high speed switching applications.
NPN
COLLECTOR
Features:
• VCEO(sus)
• VCEV
=400V (Min).
EMITTER
=700V blocking capability
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Excellent switching time: tr = 1.5,.,.s (Max.),
tf = 0.7 ,.,.s (Max.)
.35519.021
.32518.251
:::~I~:~:iD'A.
rt
TERM.l
ii>l11I14rT-,
TERM.2
.00610.151
.00110.0251
.500112.7IMIN.
.05511.391
.04511.141
TERM.3
.0331~.841
.02710.691
.I~r-. 10512.671
~ _.09512.411
.05511.391
.1
.04511.14'---"
maximum ratings (TA = 25° C)
I->-I--
.21015.331
190(4.821
.
rHJ
.10712.721
.087(2.21)
.02110.53)
.01510.381
(unless otherwise specified)
RAT,NG
Collector-Emitter Voltage
Collector-Emitter Voltage
SYMBOL
VCEO
VCEV
MJE13007
400
700
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
Pulse
VESO
IC
Icp
9
8
16
Volts
A
Base Current - Continuous
Pulse
IS
Isp
4
8
A
Emitter Current - Continuous
Pulse
Collector Power Dissipation
Derate above 25° C
12
24
2
16
A
TA = 25°C
IE
IEP
Pc
Tc=2SoC
Pc
Collector Power Dissipation
Derate above 25° C
Operating and Storage
Junction Temperature Range
TJ, TSTG
729
80
Watts
mW/oC
640
. Watts
mW/oC
-65 to +150
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
electrical characteristics (T c
=25
0
C)
ReJC
1.56
°CIW
ReJA
62.5
°CIW
TL
275
°C
(unless otherwise specified)
1 SYMBOL 1 MIN
CHARACTERISTIC
H-TYP . ·1.· MAX
UNIT
off characteristics(1)
Collector-Emitter Voltage
(Ic = 10mA, Is =0)
Collector Cutoff Current
(VCE =700V, VSE =-1.5V)
(VCE =700V, VSE =-1.5V, Tc
=100°C)
Emitter Cutoff Current
(VES =9V, IC =0)
VCEO(sus)
400
-
-
ICEV
-
-
1
5
mA
IESO
-
-
1
mA
Volts
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 1
Clamped Inductive SOA with Base Reversed Bias
SEE FIGURE2
on· characteristics(1)
DC Current Gain
(Ic =2A, VCE =5V)
(Ic =5A, VCE =5V)
Collector-Emitter Saturation Voltage
(Ic =2A, Is =O.4A)
(Ic =5A, Is = 1A)
(Ic =8A, Is =2A)
(Ic =5A, Is =1A, Tc = 100°C)
Base-Emitter Saturation Voltage
(Ic =2A, Is =O.4A)
(Ic =5A, Is = 1A)
(Ic =5A, Is = 1A, Tc =100°C)
8
5
-
60
30
-
-
-
1
2
3
3
V
-
-
V
-
1.2
1.6
1.5
-
90
-
pF
fT
4
-
-
MHz
td
-
-
0.1
p's
tr
-
-
1.5
ts
-
-
3
tf
-
-
0.7
tsv
-
-
2.3
-
0.7
hFE
VCE(sat)
VSE(sat)
-
dynamic characteristics
Output Capacitance
(VCS = 10V, IE =0, f =0.1 MHz)
Current Gain - Bandwidth Product
(IC =500mA, VCE = 10V, ftest =1.0 MHz)
Cob
switching characteristics
Resistive Load
Delay Time
Rise Time
Storage Time
=125V, IC =2A
IS1 =-IS2 =O.4A, tp =25 p's
Duty Cycle < 1%)
(VCC
Fall Time
Inductive Load, Clamped
Storage Time
Crossover Time
Inductive Load (IC =5A,
Vcl amp =300V, IS1 = 1A,
VSE(off)
=-5V, TC =100°C)
tc
(1) Pulse Test: Pulse Width - 300l-ls Duty Cycle:5 2%.
730
p's
20
I-
-
-
~
10
Ci::
:IE
:!
-
10
, j..."....l---L.
1-.. 1011'~
lms
.......
DC
2
a:
a:
II
1001's
5
I-
ffi
.....
~J.
'"'g; 0.5
TC
t;
w
o
~
0.05
10
:!
a:
...J
...J
"
I
I I
30
50
\' ,'\..."
'-'
!::?
200
100
300
"""
I-
'"'«
~
'"
0.6
'"z>=
100
r--....
i'--.
w
;;:
i'
........
~ 0.2
a~e
--.... -
~
0.5 H+-HtHttI--H-I--t+IItHIH+-I+f:WKl.....
7.II1IF-t+1+flftt-+++t+iftttl
a:
0.3
L-+tffiHtt-++-++++Htt-::::PoI""'F-HoI'BtF12- H-++H-ittt-Hc-+-t+Htt1
I-tI-t
~
0.2
1-i1:;';IM-++f:!:ItA+-++mHb..l4~~HI+Hl4-l-l+I+IifH-+++H1fl.Hl
~
TIJ 1=
iiia:~
0.1
0.07
a: 005
~ .
...
!Z 0.03
0.05
t-~00-L2~~~~~t-H+HH-r+~
~"
DUTY CYCLE, 0= tl1tIH2H+-++++TIH
~
0.02
~-1.
~--bfl+H&+H-+++H1H--1H--H-+l111j.-1 T
-.j t2 ~ P(pk)
1=
0.01
tJf iTmr(ir
0.05 0.1
0.2
0.5
1.0
2.0
5,0
TIME (m.)
10
20
,
a:
0.3
0.5
0.7
IC = 1 A
5A
~
UJ
c:C
\
'-'
UJ
...J
...J
r-.
\
\
0.8
0
I-
~
1\
r-....
0.4
I"-
0
'-'
w
'-'
>
10
8A
\
lI-
I
3
IC. COLLECTOR CURRENT (AMP)
1.2
3 A
UJ
.............
VCE = 5V
0.2
\
\
I-
I'--.... '\
55 0C
1.6
'"
'-'
u
500
400
FIGURE 2 - REVERSE BIAS SWITCHING SAFE OPERATING AREA
"r--....
'"Z
300
200
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE (VOLTS)
SECONO BREAKDOWN
DERATING
-
r- r-,...
..
THERMAL
DERATING
= 25 0 C
20
I~ \
::E
THERIMAL LIMIT
- - - BONDING WIRE LIMIT
........
SECOND BREAKDOWN LIMIT
CURVES APPL Y BELOW RATED VCEO
'"'.0.1
~
Ci::
:"'-.
--
j 0.2
8
I........
" '-
:::>
==
00.050.07 0.1
0.2
0.3
-
-
0.5
\
"\....,
r-
0.7
1
)B. BASE CURRENT (AMP)
FIGURE 6 - COLLECTOR SATURATION REGION
FIGURE 5 -DC CURRENT GAIN
731
10k
en
...
....
1.8
0.7
1.6
0.6
1.4
...en....
IC/IS = 3
0
~ 1.2
TJ= -55 0 C
w
c:t
-
",
I--"""
~
....
>
>' 0.8
-
0.6
-
l -I-"
j..---
0.40.1
0.2
0.5 OJ
0.3
.
""
0
>
:>
~
ac:
...ac:
...e....
I
I--TJ
10
I
!
0.2
~
,......
0.5
0.3
I-"'"
/ ' lbf
d 25°C
OJ
I
10
3
IC. COllECTOR CURRENT (AMP)
1/ I
'1/ J I
I
.- .....
= 1500 C
I
FIGURE 8 - COLLECTOR·EMITTER SATURATION V.OLTAGE
I
1
I
./
u:.e
....
II
I
;t
~
50 0 C
-
t-
10 O
Cob
~ FREVERSE
FORWARD
-0.2
0
+0.2
100.1 0..2
It5
0.5
+0.6
+0.4
t=
-
20
25 0 C
0.1
·0.4
20 0
I
i
50
/
1
Cib
lK
~ 50 0
...«
;:;
1
I
10
~
2K
I
J
=FTJ = 25 DC
5K
I
I
I
-"
1000 C
75 0 C
....
....
~
~
--
0.1
/
125 0 C
100
:;)
o..,
0.2
~
13
A
~lb 150 0 C
0.3
IC. COLLECTOR CURRENT (AMP)
~VCE =250 V
'j
I
lK
...z
TJ =. 55°'i/.
&
~ ~
10K
10K
.3
=3
c:t
.......«
FIGURE 7 - BASE-EMfTTER .SATURATION VOLTAGE
;(
ICIIS
0
'"
~oC V V
0.5
~ 0.4
w
..,. "'1/ '"
'-"":'15 0 C' ......... I-"'"
0
I
..
10
20
50
-'-'---
IOU 200
II
500 1000
VR. REVERSE VOLTAGE (VOLTS)
VBE. BASE·EMITTER·'VO LTAGE (VO LTS)
FIGURE 10 - CAPACITANCE
FIGURE 9 - COLLECTOR CUTOFF REGION
RESISTIVE SWITCHING PERFORMANCE
2K
lK
700
500
'WI'
..s
" '\."
300
w
::Ii 200
VCC = 125 V
ICIIB = 5
TJ = 25 0 C
~
" """
/
.......
"
::Ii
--
-
"
i=
300
"
0.3
0.5 0.7
20 0
1
2
3
5
100
0.1
10
r-- i'- .....
~
t--..
0.2
VCC = 125V
ICIIS = 5
TJ = 25°C
!'It..
i'i'
0
50
0.1
700
~
W 500
V
.....
Id@ VBE(off) = 5V
100
lK
/
"-
i=
/
IS
0.2
"
0.3
i'
0.5
0.7
1
-
2
IC. COllECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 11 - TURN·ON TIME
FIGURE 12 - TURN-OFF TIME
732
:.-- ....
V
t- If
3
10
-
~
Ie
90% VCEM
-+--~
--Isv
--J--,
IL -----fI"
10%
18-
r-
-- --".,-
- -- ---
\
~
.
.-- ~i
I
I
VeE
=::
c
....
i
-1-- f--
>
c
....
<{
M
>
-
i
I"!
0%' .......
VCEM
90% lSI
Ie
t~fj-- 1'-11'-r-Ic~ l -
h
Vclamp
r--
I,v
- ---
Vcl amp -
\90% ICM
ICM- 2%_
Ie
0
10
fZ
w
(!)
:J
a
w
<{
a:
a:
-- -
f-
..J
u
>
Ie
veE
TIME
TIME
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
20 ns/DIV
FIGURE 14 - TYPICAL INDUCTIVE SWITCHING WAVEFORMS
(at 300 V and 8A~i1h IB1= 1.6Aand VBE(off) = 5 VI
733
734
MJE13008
NPN POWER TRANSISTORS
300 VOLTS
12 AMP, 100 WATTS
Designed for switching regulator, DC-DC converter, AC-DC
inverter, high voltage, high speed switching applications.
NPN
COLLECTOR
Features:
• VCEO(sus) = 300V (Min).
• VCEV
EMITTER
=600V blocking capability
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Excellent switching time: tr = 1 P.s (Max.),
tf = 0.7 P.s (Max.)
.404110.261 . ~ ~g\~~~11
.38019.651.j· I '
I-L
,
_ -t
.19014.831
'17014'321~
..-----.
t
1
.26516.731
.24516.221
•
/t--+--I----t--r
+
.. 1144511133·.65881IDIA.
.05511.391
.048(1.221
CASE
--'-1
TEMPERATURE
REFERENCE
/ ' " POINT
:~~~\~:~;I--'
~
~591
.00610.151
.001(0.0251
~.31
TERM.l
.500112.7IMIN.
TERM.2
.05511.39
.045 1.14
TERM.3
.03310.841
.02710.691
.055(1.391
_,
.04511.141--"
maximum ratings (TA = 25° C)
1--"
f.-
.21015.331
.19014.821
.021(0.531
.01510.381
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
SYMBOL
VCEO
VCEV
Emitter Base Voltage
Collector Current - Continuous
Pulse
Base Current - Continuous
Pulse
Emitter Current - Continuous
Pulse
Collector Power Dissipation
Derate above 25° C
VEBO
Ic
ICp
18
IBP
IE
IEP
Pc
Collector Power Dissipation
Derate above 25° C
.10712.721
.087(2.21,
hr.l0512.671
~ •. 09512.41 1
TA = 25°C
Tc
=25°C
Operating and Storage
Junction Temperature Range
735
MJE13008
300
600
UNITS
Volts
Volts
9
Volts
12
24
6
12
18
36
2
16
A
Watts
mW/oC
Pc
100
800
Watts
mW/oC
TJ. TSTG
-65 to +150
°C
A
A
thermal characteristics
Thermal Resistance, Junction to Case
RBJC
1.25
°CIW
Thermal Resistance, Junction to Ambient
RBJA
62.5
°CIW
Maximum Lead Temperature for Soldering
Purpose: %" from Case for 5 Seconds
TL
275
°C
electrical characteristics (Tc = 25° C)
(unless otherwise specified)
I SYMBOL I
MIN
VCEO(sus)
Collector Cutoff Current
(VCE = 600V, VeE = -1.5V)
(VCE = 600V, VeE = -1.5V,TC·= 100°C)
Emitter Cutoff Current
(VEe = 9V, Ic = 0)
CHARACTERISTIC
I
TYP
MAX
300
-
-
ICEV
-
-
1
5
mA
IEeO
-
-
1
mA
UNIT
off characteristics(1)
Collector-Emitter Voltage
(Ic = 10mA, Ie = 0)
Volts
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 1
Clamped Inductive SOA with Base Reversed Bias
SEE FIGURE 2
on characteristics(1)
DC Current Gain
(IC = SA, VCE = SV)
(Ic = SA, VCE = SV)
Collector-Emitter $aturation Voltage
(Ic = SA, Ie = 1A)
(Ic = SA, Ie = 1.6A)
(IC = 12A, Ie = 3A)
(Ic = SA, Ie = 1.6A, Tc = 100°C)
Base-Emitter Saturation Voltage
(IC = SA, Ie = 1A)
(IC = SA, Ie = 1.6A)
(Ic = SA, Ie = 1.6A, Tc = 100°C)
S
6
-
40
30
-
-
-
1
1.S
3
2
V
-
-
1.2
1.6
1.S
V
-
130
-
pF
fT
4.
-
-
MHz
0.1
p's
2.3
hFE
VCE(sat)
VeE(sat)
dynamic characteristics
Output Capacitance
(Vce = 10V, IE = 0, f = 0.1 MHz)
Cob
Current Gain - Bandwidth Product
(IC = SOOmA, VCE = 10V, ftest = 1.0 MHz)
switching characteristics
Resistive Load
Delay Time
(VCC = 12SV, IC = SA
td
-
Rise Time
le1 = -le2 = 1.6A, tp = 2S P.s
tr
-
Storage Time
Duty Cycle < 1%)
ts
-
-
-
-
Fall Time
tf
1
3
0.7
Inductive Load, Clamped
Storage Time
(Ic = SA, Vcl amp = 300V
tsv
Crossover Time
le1 = 1.6A, VSE(off) = -SV, Tc = 100°C)
tc
(1) Pulse Test: Pulse Width - 300ps Duty Cycle::; 2%.
736
0.7
p's
4
100
S0
a::
:::E
...z~
w
oc
oc
-
20
-
-
0....
1001's
lOI's
..
2
a::
1 ms
S
r-
TC = 2S oC- I-dc
21-
.......
"-
...
"
1 ---T~~RMAL LIMIT
~ O. SI:--- BONOING WIRE LIMIT
--SECONO BREAKOOWN LIMIT
t;
w
CURVES APPLY BELOW RATEO VCEO
.... O. 2
~ O. 1
~O.O S
::>
20
SO
30
70
8
I-
w
I\.
....
....
o
6
,
c.3
4
.......
100
200
300
l\.
1\ I\.
~
""-
"
I
SV
~ f......
3 V
I"' r-;:: I.S
V
I--
0
o
SOO
VBE(oll) = 9 V-
MJEI300S-
~
2
. MJE13008
\.
1\
(.)
~
10
\
TC'; 1000C
IBI = 2.S A
(.)
.......
...
0.02
0.0 1
S
1\
0
:::E
~
a:
o
100
200
300
SOD
400
600
700
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE (VOLTS)
VeE. COLLECTOR - EMITTER VOLTAGE (VOLTS)
800
FIGURE 2 - REVERSE BIAS SWITCHING SAFE
OPERATING AREA
FIGURE 1 - FORWARD BIAS SAFE
OPERATING AREA
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
1
~
O.8
1'0~_
r-
~
a:
o
t;
~ O. 6
~
"'-
t:I
Z
~
ffi
CI
........
~
"',
0.4
i'-..
a:
w
~ O. 2
...
20
40
i
SECONO BREAKOOWN
f-OERATING
"
Na:
-
1""-"
0.5
0.3
~
~
........ r-....
r--...
THERMAL
DERATING
o
_•
is 0.7~
0.2
,
I'..
R/lJC = 1.2S·C/W MAX
D CURVES APPLY FOR POWER
=
I- 0.05
;:
I- J.~
~
140
1-i1~1-++H#It=+R-I++Hl~~~~rn+m+H-H+lHH+-t+.J-H.1ll
~
i
60
80
100
120
Te. CASE TEMPERATURE (DC)
~
~
h.J
0.1
::!
"-
II
~ ~~O;'I~II~i~ml~~~tZaJC(I) rll) RaJc
ill
0.07
~ 0.05
.........
1--l+-I-I+H-IH--I-I-++l-J.Hl.I-++H+J:I,~,IfIIF~++If.IHIf.++-H++I-Hl
~
0.03
0.02
0.01
160
~~~ETT:J~~HOWN
TJlpk) -TC Plpk) ZaJcll)
=
'?
DUTY CYCLE. D= 11/12
SLJL--L
L.-=+-1.MFH.M~+-H~fH-+++HI
""1-1"'1
1
WTmrn
~-
0.01 0.02
0.05 0.1
T
1111--1
~ 12 ~
E
0.2
0.5
1.0
2.0
5.0
TIMEI,n.)
10
1ttt-+t-+++1tIH
PIPk) 1ttt-++-H+t+11+1
20
50
100 200
SOD
10k
FIGURE 4 TYPICAL THERMAL RESPONSE [(ZeJc(t)]
FIGURE 3 - FORWARD BIAS POWER DERATING
50
en
I-
-'
30
(.)
u
...
..:;
1.6
a:
IC = 1 A
1. 2
UJ
l-
I-
~~p..
:g
UJ
ci:
O. 8
0
I-
,
1
\
....
.... o.4
UJ
~
0
I'
S
10
..:;
(.)
>
20
0
O.OS 0.07 0.1
1\
\
0.2
\
\
"
" r-.... -'\
f'...
r--....
(.)
I'
1\12':
1\
1\
1\
(.)
!'.....
1\
8A
SA
\3A
0.3
O.S
0.7
1
lB. BASE CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 6 - COLLECTOR SATURATION REGION
FIGURE 5-DC CURRENT GAIN
737
"- r--..
S
1.4
O. 7
I II I
" I I.
TJ = 150 0 C I
0.6
1.2
ICIIS = 3
en
....
.....
--
Q
:::.
~
UJ
c:>
«
....
..... 0.8
Q
>
>'
0.6
25°s,...
--
.-'
~
.s., .......
~ ......
V
~
Q
:::.
,I
/
0.3
~
~ 0.3
~~
~ .....25 0 C
Q
> 0.2
>'
~
o. 1
0.5 0.7
2
5
3
1
7
o
0.2
20
0.3
0.5
4K
=VCE = 2S0 V
'j
I
/
/
/
V1 J
L1
I
I---
Cib
2K
I
......
~
-TJ= ISOoC
TJ =25 0 C
I
./
12S oC
~ 100
a:
=>
u
a:
...
""...
_
I
lK
...z
...
I
I
/
-
lK
~ 800
~ 600
/
I
./
7S u C
I
10
sooc
/
~ 400
i3
~
~ 200
I
/
FORWARO
0
+0.2
~
100
8a
60
2S oc
0.1 ~ F REVERSE
,04
·0.2
~Ob
t.;
'f'
Q
""~
-
z
100 0 C
0
4 0.1 0.2
+0.4
0.5
+0.6
2
1
10
5
VBE. SASE·EMITTER VOL TAGE (VOLTS)
RESISTIVE SWITCHING PERFORMANCE
2K
300
';
..s
'""
VCC= 12SV
Ic/lS = 5
TJ = 2S oC
"~ r-. . .
~.20 0
II
30 01'..
20 0
III
0.3
O.S
0.7
1
r-....
.......
I
10
100
0.2
20
"
" -
0.3
.......
V
......
O.S
If
...-
......~
0.7
IC. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURRENT (AMP)
FIGURE 12 - TURN·OFF TIME
FIGURE 11 - TURN·ON TIME
738
i'...
VCC = 12SV
Ic/lS = S
TJ = 2S oC
0
V
Id@VSE(off) = 5V
a
--
Is
70 0
""-
a
50
0.2
lK
'/
....
::E
-
I-"
"
/
~
UJ
10
~
~uu
FIGURE 10 - CAPACITANCE
lK
700
1 JU
SO
20
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 9 - COLLECTOR CUTOFF 'REGION
500
20
FIGURE 8 - COLLECTOR·EMITTER
SATURATION VOLTAGE
10K
u
10
3
IC. COLLECTOR CURRENT (AMP)
FIGURE 7 - BASE·EMITTER SATURATION VOL TAGE
Q
2
0.7
IC. COLLECTOR CURRENT (AMP)
;(
--S5 0 C
~
:;
-I-
0."1.2
IclIs = 3
0.4
UJ
...... V150 0 C
.......
~
/J
/
O. S
II
TJ = -55 0
10
20
-
I
Ie
90% VCEM
I
I 1\90%1 Ie
10%
10%"
VCEM -----'
90% 181
---
ICM-
-- --\- - -- --- -- -- ............
I
..--
veE ~
>
o
trv
Vclamp
\
Ie
Vclamp -
ff, -.\:tti'" ..... ttif-tc~ r~
;/
I'\.
tsv
1 8 -f -
I
,--l
o
......
~
>
o
N
III
W
IZ
Cl
w
2%~
<{
a:
a:
I-
U
>
..J
o
:J
Ie
Ie
veE
TIME
TIME 20 ns/DIV
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
FIGURE 14 - TYPICAL INDUCTIVE SWITCHING WAVEFORMS
(at 300 V and 12 A with IB1 = 2.4 A and VBE(offl =5 VI
739
740
MJE13009
NPN POWER TRANSISTORS
400 VOLTS
12 AMP, 100 WATTS
Designed for switching regulator, DC-DC converter, AC-DC
inverter, high voltage, high speed switching applications.
NPN
COLLECTOR
Features:
• VCEO(sus)
=400V (Min).
EMITTER
• VCEV = 700V blocking capability·
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Excellent switching time: tr = 1 J.LS (Max.),
tf
.404{10.261 . ~ ~~\~.~~\
.38019.651.j· I ·
=0.7 J.LS (Max.)
I-i..
.
_ -t
.
---.
I
.19014.831
.17014.32Irt .05511.391
I
.04811.221
.--.
f
.26516.731
.24516.221
•
CASE
TEMPERATURE
REFERENCE
/
POINT
----,
.22015.591
~
.00610.151·
.00110.0251
TERM.l
TERM.2
TERM.3
.0331~.B41
.1~.10512.671.
.05511.391--/
.04511.141
maximum ratings (TA
I-- .21015.331
I-- _ .19014.821
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
SYMBOL
VCEO(sus)
VCEV
Emitter Base Voltage
Collector Current - Continuous
Pulse
Base Current - Continuous
Pulse
Emitter Current - Continuous
Pulse
Collector Power DiSSipation
Derate above 25° C
VEBO
IC
ICp
18
IBP
IE
IEP
Pc
Collector Power Dissipation
Derate above 25° C
.10712.721
.08712.211
~" " ".09512.4 11
.02710.691
TA = 25°C
TC
=25°C
Operating and Storage
Junction Temperature Range
741
MJE13009
400
700
UNITS
Volts
Volts
9
Volts
12
24
6
12
18
36
2
16
A
Watts
mW/oC
Pc
100
800
Watts
mW/oC
TJ, TSTG
-65 to +150
°C
A
A
thermal characteristics
Thermal Resistance, Junction to Case
ROJC
1.25
°C/W
Thermal Resistance, Junction to Ambient
ROJA
62.5
°C/W
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
TL
275
°C
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
VCEO(sus)
ICEV
I
TYP
MAX
UNIT
400
-
-
Volts
-
-
1
5
mA
1
mA
off characteristics(1)
Collector-Emitter Voltage
(Ic =10mA, Is =0)
Collector Cutoff Current
(VCE =700V, VSE =-1.5V)
(VCE =700V, VSE =-1.5V, Tc
Emitter Cutoff Current
(VES =9V, Ic =0)
=100°C)
IESO
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 1
Clamped Inductive soa with Base Reversed Bias
SEE FIGURE 2
on characteristics(1)
DC Current Gain
(lc =5A, VCE =5V)
(Ic =BA, VCE =5V)
Collector-Emitter Saturation Voltage
(Ic =5A, Is =1A)
(Ic =BA, Is =1.6A)
(lc =12A, Is =3A)
(Ic =BA, Is =1.6A, Tc =100°C)
Base-Emitter Saturation Voltage
(Ic =5A, Is =1A)
(lc =BA, Is =1.6A)
(Ic =BA, Is =1.6A, Tc =100°C)
B
6
-
40
30
-
-
-
1
1.5
3
2
V
-
-
1.2
1.6
1.5
V
Cob
-
130
-
pF
fT
4
-
-
MHz
td
-
0.1
fJs
tr
-
-
1
fJs
ts
-
3
tf
-
-
tsv
-
tc
-
hFE
VCE(sat)
VSE(sat)
dynamic characteristics
Output Capacitance
(VCS =10V. IE =0, f
=0.1
MHz
Current Gain - Bandwidth Product
(Ic =500mA, VCE =10V, ftest =1.0 MHz)
switching characteristics
Resistive Load
Delay Time
Rise Time
=125V, Ic =BA
IS1 =-IS2 =1.6A, tp =25 fJs
Storage Time
Duty Cycle < 1%)
(Vcc
Fall Time
.7
Inductive Load, Clamped
Storage Time
Crossover Time
=BA, Vcl amp =300V
IS1 =1.6A, VSE(off) =5V, Tc =100°C)
(Ic
(1) Pulse Test: Pulse Width - 300 /-IS Duty Cycle:5 2%.
742
-
2.3
0.7
fJS
100
50
20
ii:'
~
....
zW
_. -
--
-
II:
II:
1 ms
-
TC = 25 DC- r-dc
u
g;
2
II:
......
0.5 : - - - BONDING WIRE LIMIT
G
w
..... 0.2
i5 o. I
u
--SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
\
TC';;; 100DC
IBI =2.5 A
oj
4
1\
\.
\
\ \.
2
~
20
10
50
30
70
\.
6
'"
100
VBE(Dlfl
I'--..
~
~E1300 t -
-
~ I-...
-......
200
300
=9 V -
........ .....
5 V
3V1.5 V
IDa
BOO
200
300
400
500
600
700
VCEV. COLLECTOR·EMITTER CLAMP VOLTAGE (VOLTSI
MJEI3009
5
I\.
....o
e..>
w
....
....
o
B
u
'"
:} 0.05
0.02
0.0 I
1\
10
ii:'
:;;
:!
'"
1 §---T~~RMAL LIMIT
::l
10"s
100"s ...
10
5
--
14
500
VCE. COLLECTOR - EMITTER VOLTAGE (VOLTSI
FIGURE 2 - REVERSE BIAS SWITCHING SAFE
OPERATING AREA
FIGURE 1 - FORWARD BIAS SAFE
OPERATING AREA
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
1
~
1'0~1III1mID.
s:- r--
~
O. B
II:
.0
' ....
u
QO.7~
"""-
~
r-
.........1'-,
~ 0.6
UI
z
~
ffi
o
SECONO BREAKOOWN
DERATING
+-
~
THERMAL
DERATING
W
lI:
o. 2
o
20
0.3
~ 0.2
~
0.1
0.07
ffi
0.05
.'"
.........
,
"-
~
"
140
~
~
L..
J1..fL""!"
0.03
1 I
~--boI'l-tHtt+H-tt+t+It-I-++-l-tl111"'1
0.01
tAr iTmil Tr
160
0.02
0.05 0.1
Ittr+l-++tttttl
T
7.1 12 I- P(Pk) 1Hl-+++I+tt1H
0.2
0.5
1.0
2.0
5.0
TIME (ml)
10
20
50
100 200
500 10k
FIGURE 4 - TYPICAL THERMAL RESPONSE [(ZOJC(t)]
u;
....
....
w
-2S DC
20
W
II:
a:
::>
t.)
t.)
o
r-..2'~
j'-..
-
5S DC
10
.:
VCE tSV
0.3
O.S
0.7
1
TJ = 2S 0 C
1.6
'"<....
....
......... K'SODC
z
SO.2
READ TIME @II
TJ(pk)·TC=P(pk)ZoJC(I)
DUTY CYCLE. D= 11/12
0.02
o
~
30
W
....
ZOJC(I) = r(l) R8JC
11
am
I"- ......
0
~
D CURVES APPLY FOR POWER
~~8Ie~~~ml~~tROJC=
1.25'CIWMAX
r- 0.05
PULSE TRAIN SHOWN
f-~
i
~
I-
0.1
i!:
so
....
'"z
II
~
FIGURE 3 - FORWARD BIAS POWER DERATING
<
H+++++I-Hl-+++-ttlfttfjf--t+-I-+I:J;I.IH6~~+ttl-tHl+r-H-ttHffi
~.J
....
~
H I-fI-t-tHHIt--l-H-t+Httbl;","",FbW1'JIfi:::::'-t-H-ttHttt-+-t-t+ttHltt
:E
60
80
100
120
TC. CASE TEMPERATURE (DCI
40
05
a:
iii
W
II:
f
;
~
"""- r-
t"-.
0.4
-
"""- """-~
>
a:
1. 2
w
....
t:
~~
a5 o. B
II:
o
\
Ie = 1 A
\
\
,
\
\
t.)
w
j
~
O. 4
o
t.)
2
3
"
10
W
e..>
>
20
IC. COLLECTOR CURRENT (AMPI
o
0.05 0.07 0.1
0.2
1\
\
\
\
....
I-...
BA
5A
\3A
\
\
\
~
0.3
\
\12A
\
\
--
I'0.5
0.7
1
I\.
~
lB. BASE CURRENT (AMPI
FIGURE 5 -DC CURRENT GAIN
FIGURE 6 - COLLECTOR SATURATION REGION
743
"- ......
1.4
0.7
I I
1.2
...en....
-
1
Q
:::
WI
(:J
......
<
~
ICIIO = 3
i-' ~
2S°s..
D. 8
V
Q
>
>-
-
O. 6
l-
I-'"
O.
"d.2
0.3
~
0.5 0.7
1
'/
~
~
;
.......~ 0.3
...... V ,S00C
~
~ ~250e
~ 0.2
~
>-
o. 1
2
1
7
fo·
3
~VCE = 250 V
o
20
0.2
0.3
0.1
0.5
2
3
10
5
20
IC. COLLECTOR CURRENT (AMP)
-i
'1·
L
V /
I
I
II' j
J
/
j
/
FIGURE 8 - COLLECTOR-EMITTER
SATURATION VOLTAGE
•. ~ J
/
.1
4K
I
2K
Cib
r--TJ = 2soe
...z..3
~
f--ssoe
~
FIGURE 7 - BASE-EMITTER SATURATION VOLTAGE
C(
IJ
:::...
IC. COLLECTOR CURRENT (AMP)
lK
IJ
lelle = 3
;:: 0.4
~
.-....: ~
i""'~
ddI
TJ' = "510
o.s
V
TJ = -55°':'- ~ ....
..
III
0.6
I--TJ = 1500C
-~ . /
125°C
100
-'-I
:e.- 80lK0
.1
lj 600
~ 40 0
II:
::>
u
100°C
75 u e
II:
./
I
<
~ 20 0
u
u-
u
....
WI
sooe
oJ
Q
V
/
u
~
+0.2
1"-
80
60
FORWARD
D'"
~Ob
100
25 0 C
0.1 F= 1= REVERSE
-04
-02
--
<:i
I
J
:: 10
I-
0
4 0.1 0.2
1
0.5
+0.6
+0.4
10
5
2
50 ·luu
20
~uu
VR. REVERSE VOLTAGE (VOLTS)
VeE. eASE·EMITT.ER .VOL TAGE IvOl TS)
FIGURE 10 - CAPACITANCE
FIGURE 9 - COLLECTOR CUTOFF'REGION
RESISTIVE SWITCHING PERFORMANCE
2K
IK
70 0
SO O~,
300
""
Vee.= 125\i
leliB =!;
TJ = 250 e
"~'i'.,
;:
300
"
50
0. 2
0.3
0.5
"
200
111
1 I
0.7 . 1
2
r-....
3
.......
V
r-....
""'i'
......
5
t10
100
0.2
20
0.3
0.5
II
i-"
I-"
0.7
Ie. COLLECTOR CURRENT (AMP)
IC. COLLECTOR CURREN.T (AMP)
FIGURE 11 - TURN-Ollj'TiME
fiGURE 12 - TURN-OFF TIME
744
"-
VCC = 12SV
IcllB =5
TJ =25°C
~ 500
V
Id @l VBE(olf) =5V
0
"
700
0
100
~
~
~
Ir
....
--
Is
lK
/
' ....
--
10
20
I ,--..:.
Ie
~90%
90% VCEM
Isv
I,v
h
I-tc~
-- --\- --- --- -\
.............
---
~
rI'\.
-
-- -
,5
>
;
\'
,
:
..
~
........ 1
t
~.,
, 'IJ
'-.-r-....L .. .
..\.:
. .. . ., , I
!
'
t
veE ~
....o
<
>
oIt)
N
IZ
leM- 2%-
VeEM -
Ie
I
10%""-
10%
90% 181
Ie
I-\-Ifi ..... I - ' t i -
/
Vclamp
18
ft
I
Vclamp -
Ie
w
Cl
w
<1:
It
It
:J
CJ
I-l
o
>
Ie
veE
TIME
TIME 20 ns/DIV
FIGURE 13 - INDUCTIVE SWITCHING MEASUREMENTS
FIGURE 14 - TYPICAL INDUCTIVESWITCHINGWAVEFORMS
lat 300 V and 12 A with IBl = 2.4 It.. and VBEloffl = 5 VI
745
746
MJE13070
MJE13071
. HIGH VOLTAGE/HIGH SPEED
NPN POWER TRANSISTORS
400-450 VOLTS
5 AMP, 80 WATTS
The MJE13070 and MJE13071 are high-voltage, high-speed
power switching transistors, designed for use with inductive
circuits, including: switching regulators, inverters, solenoid
and relay drivers, motor controls, deflection circuits and
other line-operated switching applications.
NPN
COLLECTOR
EMITTER
Features:
CASE STYLt: TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Fast Turn-Off Times:
100 ns inductive fall time @ 25°C (Typ)
150 ns inductive crossover time @ 25°C (Typ)
400 ns inductive storage time @ 25°C (Typ)
:~~g\!:~~\~
I
.--.
.26516.731
.24516.221
t---+---I----ll--
• Operating temperature range -65 to +150°C
+
~:~:~~~:DIA.
• 100° C Performance Specified for:
Switching times with inductive loads 50 ns inductive fall time (Typ)
Saturation voltages
Leakage currents
M
TERM.l
4To~IIII4n--'
TERM.2/
.05511.391
.04511.141
TERM.3
.0331~.841
.02710.691
1--.
I+-
CASE
TEMPERATURE
REFERENCE
/
POINT
----,-
.22015.591
-----.i.
.00610.151
.00110.0251
.500112.7IMIN.
.10712.721
.08712.211
.1hJ--.l0512.671
~" .09512.411
.1
.05511.391
.04511.141--'
maximum ratings (T A = 25° C)
.35519.021
.32518.251
•
.05511.391
.04811.221
.02110.531
.01510.381
.21015.331
.19014.821
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (Repetitive)!1)
Base Current - Continuous
Peak (Non-Repetitive)(1)
Total Power Dissipation @ Tc = 25° C
@Tc= 100°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
MJE13070
400
650
6.0
5.0
8.0
2.0
4.0
80
32
0.64
MJE13071
450
750
6.0
5.0
8.0
2.0
4.0
80
32
0.64
UNITS
Volts
Volts
Volts
A
TJ, TSTG
-65 to +150
-65 to +150
°C
ROJC
1.56
1.56
°CIW
TL
260
260
°C
SYMBOL
VCEO
VCEV
VEB
Ic
ICM
18
IBM
Po
A
Watts
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
(1) Pulse Test: Pulse Width
=5ms. Duty Cycle :510%.
747
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
VCEO(sus)
I
TYP
MAX
UNIT
400
450
-
-
Volts
-
0.5
2.5
mA
3.0
mA
1.0
mA
off characteristics(l)
Collector-Emitter Sustaining Voltage·
(Ic =100mA, Is =0)
Collector Cutoff Current
(VCEV =Rated Value, VSE(off)
(VCEV =Rated Value, VSE(off)
MJE13070
MJE13071
ICEV
Collector Cutoff Current
(VCE =Rated VCEV, RSE =50n, Tc =100°C)
ICER
-
-
Emitter Cutoff Current
(VES =6.0V, Ic = 0)
lEBO
-
-
=1.5V)
=1.5V, Tc =100°C)
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 12
Clamped Inductive SOA with Base Reversed Bias
SEE FIGURE 13
on characteristics(1)
DC Current Gain
(Ic =3.0A, VCE
=5.0V)
hFE
Collector-Emitter Saturation Voltage
(Ic =3.0A, Is =0.6A)
(IC =5.0A, Is =1.0A)
(Ie =3.0A, 18 =0.6A, Te =100°C)
Base-Emitter Saturation Voltage
(Ic =3.0A, Is =0;6A)
(Ic =3.0A, Is =0.6A, Tc =100°C)
VCE{sat)
~.O
-
-
-
-
-
V
-
1.0
3.0
2.0
-
-
1.5
1.5
V
p's
-
VSE{sat)
-
dynamic characteristics
Output Capacitance
(VCS =10V, IE =OA, ftest
=1.0 kHz)
switch i ng characteristics
Resistive Load
Delay Time
(VCC
td
Rise Time
IS1
tr
Storage Time
Duty Cycle < 2%, VSE{OFF)
=250V, Ic =3.0A
=O.4A, tp =30 p's
=5.0V)
Fall Time
0.03
0.05
0.10
0.40
ts
-
0.40
1.50
tf
-
.175
0.50
tsv
tc
tfi
-
0.70
2.0
0.28
0.15
0.50
0.30
0.40
-
0.15
-
Inductive Load, Clamped
Storage Time
Crossover Time
Fall Time
IC{pk) =3.0A
IS1 =0.4A
VSE{Off) =5.0V
Storage Time
VCE{PK)
(TJ
=100°C)
=250V
Crossover Time
tsv
(TJ = 25°C)
Fall Time
tc
tfi
(1) Pulse Test: Pulse Width - 300~ Duty Cycle :5 2%.
748
0.10
p's
3.0
30
--... r-..... ~
TJ = 25'C
C
"!Z
"'"
w
'"
20
VCE = 5.0V
U
D
~
~
~
1.0
w
1\
\
0
i'..
z
a:
a:
u
iii
!:;
10~'C
........
,
\
2.0
"~
5.0A-
D
\,
>
0.5
l:::Ii
0.3
a:
w
'\l\
"-
\
IC=1.0A
~
"-
2.SA
0.2
0
5
10
...0~
-
\.
"""".......
I"-.
0.1
U
ui
7.0
I - - I-- TJ = 25'C
u
>
5.0
O.OB 0.1
0.2
0.3
0.5
1.0
2.0
0.03
8.0
5.0
3.0
0.05
I
0.02
I
0.03
0.1
0.05
FIGURE 2 -
FIGURE 1 - DC CURRENT GAIN
iii
!:;
0
~
0.30
"!:;
p, = 5.0
C
0
>
a:
/
0.20
w
100'
l:::Ii
......
0
w
0.10
U
ui
J:
V/
~
1I
V
2.0
1.0
0.5
COLLECTOR SATURATION REGION
O.OS
0.2
0.1
0.3
~
~
1.0
w
I100'C
0.5
.:.
.
~
ui
:
0.5
1.0
2.0
3.0
0.3
0.2
0.05
5.0
0.2
0.1
IC COLLECTOR CURRENT (AMPS)
0.3
0.5
. 1.0
2.0
3.0
5.0
IC COLLECTOR CURRENT (AMPS)
FIGURE 3 - COLLECTOR-EMITTER
SATURATION VOLTAGE
FIGURE 4 - BASE-EMITTER VOLTAGE
104
10K
V
103
TJ
=150°C
/
V
/
/
V L .L
/
~ 1000
/
w
U
125°C
Z
~
I
./
100 0 e
101
",
I
I
7S'C
r.i 100
REVERSE
FORWARD
100
/
/
VCE = 250 V
=
--Cib
Cob
TJ = 25'C
t-
I
25'C
I
1
-0.2
r--
I
/
./
./
./
102
-0.4
~
1.00'"
I-"""
.... I-
TJ=25°C
0.7
::t.l
w
/TJ=25'C
-- --
p,=5.0
o
~g
'~"
~
0.07
0.05
V
~
~
0
Ij
0.3
2.0
0.50
w
0.2
IB BASE CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
0
-1-0.2
+0.4
10
1.0
+0.6
3.0
5.0
10
- - -30
50
100
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 5 - COLLECTOR CUTOFF REGION
FIGURE 6 - CAPACITANCE
749
300
500
1000
~
../""
~
I~
190% VCE(pk)
7.0
f
9041C(Pk)
I,
l./
I
VCE
10%· .........
10% VCE(pk)
ICPkIB
_IC=3.0A
Pf = 5.0
0:m
i3 4.0
~.. 3.0
-.-
~
2%IC-
Ie 2.0
-
............
FIGURE 8 -
Pf = 5.0
TJ=75'C
./
~
--... .......
......
~
/'
~
J
--....
..-
2.0
~BE(Off)= 1.0V
...
.;;
w
:&
F
~
VBE(off) =
ro
~~
I'
....
'
1-++-l-H-I+IH-I-I-++H+IH--+l-I-++l:JIoI1E,.jjiIF-+I+t1I1#-t++t-HtHl
0.2
b.J
.... '"
1-i1;;;1~-++i'mA+++H+Hhol"t~..9lf-H+Hf-l-+-H-II-Hl#-H-+l-HiHt
0.1
0.07
?
~~O~'lmll~~~II~~~
0.05
ZeJc(l) = r(l) ReJC
~U~~~VT~A~~~~V;~: POWER
ReJC=1.56'CIWMAX
READ TIME@l1
TJ(pk) - TC = P(pk) ZeJC(I)
~
0.05
~
0.03
1-'i"=F
I J....~KHlIf++-+-tHttH---H-+++i
JlJL--L
0.02
~-
111~1
..
I
~
0.01
.
J';;j;..oo
0~-+::IoP+1'BI"5I"t-IH-I-ttttt-H-++
DUTY CYCLE, D= 11/12
I
~
0.01
0.02
'iTmilTi
0.05 0.1
0.2
0.5
1.0
2.0
5.0
TIME (ml)
10
20
'.
1--VeE(off
-'>-.
-
...........
.;r-~
=~.o V
"
~
.......
1"- ....
VBE(off) =rv
0.7
1.0
3.0
2.0
5.0
++-I-++1f+Hl
i
~
100 200
de
2.0
~
8
0.2
10ps
1.0ms
'-
"'
"\.
1.0
-
,
TC = 25'C
-=
- -- --
MJE13070
MJE13071
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
.....
0.02
0.01
10k
JJU
5.0
7.0 10
I
I
I
I I
I
20
30
50
70
100
=
i"""..
200
300
VeE. COLLECTDR-EMITTER VOLTAGE'(yOLTS)
FIGURE 11 TYPICAL THERMAL RESPONSE [(ZOJC(t))
FIGURE 12
750
~
"'
III
0.1
Y 0.05
600
..
0:
B
0.5
T 1Hf--+-I-+++1it+!
60
CROSSOVER AND FALL TIMES
5.0
~ 12 ~ P(pk) 1IH-+-I--+-Hf+H+I
E
---
' ...
10
D=0.5
~
...
FIGURE 10 -
0.5
;
VBE(off)=1.0V
IC COLLECTOR CURRENT (AMPS)
;0:
Iiiiii
VeE(Off) = 5.0 V
~
.... ....
".
0.15
0.5
5.0
6'
:1i
8.0
T75;C ff=r o
1,0m_ _1111
~rJ
............
I--'" ~
1'.
FIGURE 9 - STORAGE TIME
II
....
0.2
V
3.0
2.0
1.0
IC COLLECTOR CURRENT (AMPS)
I- ..
0.3
0.5
0.7
0.5
oJ
~
~
7.0
I
- - - III
--
0.7
0.7
0.7
6.0
_ _ Ie
1.0
.........,
1.0
0.5
5.0
PEAK REVERSE CURRENT
1.5
3.0
4.0
BASE-EMITTER YOLTAGE (YOLTS)
INDUCTIVE SWITCHING
MEASUREMENTS
5.0
~
3.0
YBE(ol~
TIME
!w
2.0
1.0
~
FIGURE 7 -
~
1.0
.-" ~
\
./
,.V
V
~
TJ=25'C
.. 5.0
9O%IBI
-- --\- -- --- - - - -
6.0
~
Irv:f~I\'- ~III""
--j -Ie~ I--
Isv
IC/
,CE(Pk)
"\
./
8.0
I..
IC pk
M4XIMUM FORWARD BIAS SAFE
OPERATING AREA
450
,, \
1\,
8.0
7.0
f
~
5.0
0::
a
4.0
0::
~
~
p,;;'4.0
3.0
0
u
!:} 2.0
---
-
,
MJ1~071
\
\
200
300
"'"
400
500
0.6
Cl
~0::
W
Q
II:
1"--",,-
THERMAL
OERATING
0.4
w
3:
0
a.
~
1""-
0.2
-=:::-:600
-,
1
700
o
750
VCE COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
40
BO
60
"I'-. "',
100
120
FIGURE 14 -
751
I--
r-
""-
140
TC CASE TEMPERATURE ('C)
FIGURE 13 - MAXIMUM RATED REVERSE BIAS SAFE
OPERATING AREA
-
"'",
z
VBE90ff) = 1.0105.0 V
MJ13070
1.0
100
I:i
:1:
IBREA~DOW~
SEboNO
OERATING
1""-
0::
0
\\ \
,,
,~
,
\ ..
r-- TJ<;1OO'C
--""- -- ---"I'-.
I"--
O.B
., VBE(ofl)1= 0
,y
8.0
~
~
0::
... ~
POWER DERATING
160
752
MJH13090
MJH13091
. HIGH SPEED
NPN POWER TRANSISTORS
400 & 450 VOLTS
15 AMPS, 125 WATTS
The MJH13090 and MJH13091 transistors are designed for
high-voltage, high-speed power switching in inductive circuits where fall time is criticaL They are particularly suited for
line operated switch-mode applications such as:
NPN
COLLECTOR
Features:
EMITTER
• Switching regulators
J
CASE STYLE TO-218
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• Inverters
[
• Solenoid and Relay drivers
• Motor Controls.
:::::,'::1
1t
1======1
II
.1~'=Fi-=;==r=;r=r-I '46~~t1:09)
100 C Performance Specified for:
Reverse-Biased SOA with inductive loads
Switching times With inductive loads50 ns inductive.fall time (Typ)
Saturation voltages
Leakage currents
0
::~g :~~:!
T
1
.606(15.392)
M
.
MAX.
-r1
.048(1.219)
NOM.
.622(15.798)
2
3
1
~~ :~~~:~;~~!
.450(11.430)
.410(10.414)
maximum ratings (TA
-j
--
.156(3.96)
MIN.
• Deflection circuits
:~~;:~~:~;~!
-1
.018(.457)
NOM.
.095(2.413)
MIN.
=25° C) (unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current -Continuous
Peak (Repetitive)(1)
Base Current - Continuous
Peak (Non-Repetitive)(1)
Total Power Dissipation @Tc= 25°C
@Tc= 100°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCEV
VEBO
Ic
ICM
IB
IBM
Po
MJH13090
400
650
6
15
20
5
10
125
50
1
MJH13091
450
750
6
15
20
5
10
125
50
1
UNITS
Volts
Volts
Volts
TJ, TSTG
-55 to +150
-55 to +150
°C
ROJC
1.0
1.0
°C/W
h
275
275
°C
A
A
Watts
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
(1) Pulse Test: Pulse Width
=5ms. Duty Cycle $10%.
753
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
VCEO(sus)
I
TYP
MAX
UNIT
400
450
-
-
Volts
-
0.5
2.5
rnA
3
rnA
-
1
rnA
off characteristics(1)
Collector-Emitter Sustaining Voltage
(Ic = 100mA, IB = 0)
MJH13090
MJH13091
Collector Cutoff Current
(VCEV = Rated Value, VeE(OFF) = 1.5V)
(VCEV = Rated Value, VBE(OFF)) = 1.5V, Tc = 100° C)
ICEV
Collector Cutoff Current
(VCE = Rate VCEV, RBE = 50.0., TC = 100°C)
ICER
-
Emitter Cutoff Current
(VEB = 6V, IC = 0)
IEeO
-
second breakdown
Second Breakdown with Base Forward Biased
SEE FIGURE 12
Clamped Inductive SOA with Base Reversed Bias
SEE FIGURE 13
on characteristics
DC Current Gain
(Ic = 10A, VCE = 3V)
hFE
8.0
-
-
-
Collector-Emitter Saturation Voltage
(Ic = 10A, IB = 2A)
(Ic = 15A, Ie = 3A)
(Ic = 10A, Ie = 2A, Tc = 100°C)
VCE(sat)
-
-
V
-
1
3
2
Base-Emitter Saturation Voltage
(Ic = 10A, Ie = 2A)
(Ic = 10A, IB = 2A, Tc = 100°C)
VeE(sat)
-
-
1.5
1.5
V
-
0.03
0.05
p's
0.13
0.5
-
switching characteristics
Resistive Load
Delay Time
VCC = 250V, Ic = 10A
td
Rise Time
IB1 = IB2 = 1.25A,
tr
Storage Time
tp = 30 p.sec
ts
Fall Time
tf
0.55
2.5
0.10
0.5
Inductive Load, Clamped
Storage Time
ICC(PK) = 10A
IB1 = 1.25A
tsv
(TJ = 100°C)
Crossover Time
Fall Time .,
VBE(OFF) = 5V
tfi
Storage Time
VCE(PK) = 250V
tsv
Crossover Time
(TJ = 25°C)
Fall Time
tc
tc
tfj
(1) Pulse Test: Pulse Width - 300,.,.s Duly Cycle:5 2.%
754
-
0.8
3
.175
.15
.4
.3
.50
-
.15
-
.10
-
p's
TYPICAL ELECTRICAL CHARACTERISTICS
50
I I
r---..
100°C
30
'" I'
:2
<
"">-:2
20
.......
TJ = 25°C
...a:a:
=>
@"
...
r--." I'
'"~
~
10
u..
.r::
\
1\
2.0
o
>
1'-"
t.)
.,:,
,
25°C
o
~ 3.0
VCE = 5.0 V
t.)
Q
10
7.0
5.0 f- TJ
IC = 5.0 A
ffi 1.0
\
7.5 A
~ 0.7
"\' 0.5
a:
o
t; 0.3
I"
1'-
...g 02
7.0
'"
t.)
tJ 0.10.05 0.07
5.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC. COLLECTOR CURRENT (AMPS)
10
20
FIGURE 1 - DC CURRENT GAIN
iii' 3.0
0
2.0
~
!:;
""
...
iii' 2.0
o
1.0
> 0.7
a: 0.5
-
{Jf
'l
TJ
=100°C
..,
~
o 0.1
~0.D7
......
",.
./
~~
~
"'""
TJ
TJ = 25°C
......::e
~ 0.5
=25°C
~
~
~
-~
TJ - 100°C
~
co
10
0.3
0.2
20
/
J
TJ= 150 DC
w
1/
a:
100De
0
....
e..>
..... 101
.....
w
./
1/
/
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (AMPS)
FIGURE 4 - BASE·EMITTER VOLTAGE
20
...1000
.....
f
....So
tiiii
t.)
7
j
:2
~
1/
/
75D'C
I--- l- f- Cib
I
/
j
"
~
125 De
102
I
/
/
.3 103
....
z
0.3
10K
~ VeE = 250V
;(
Cob
t.)
~ 100
0
5
e..>
100
5.0
..:.
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC. COLLECTOR CURRENT (AMPS)
_1
~
3.0
-~
0.7
FIGURE 3 - COLLECTOR·EMITTER
SATURATION VOLTAGE
e..>
2.0
.If
;:;>0.05
0.2 0.3
:::>
).....
{Jf = 5.0
~ 1.0
a:
i;'
~ 0.2
t;
a:
a:
"'""'
f--
0.2 0.3
0.5 0.7 1.0
lB. BASE CURRENT (AMPS)
'"~
=5.0
0.3
104
"" l"-" r--....
~
0
~
...::e
15 A t-- r-
~
3.0
!:;
!:;
0.1
\
\
FIGURE 2 - COLLECTOR SATURATION REGION
5.0
.....:
10 A
/
1*= pREVERSE
D
TJ = 25 °C
"'"
c..S
FORWARD
25 C
10·1
·0.4
1
1
·0.2
o
+0.2
+0.4
10
1.0
+0.6
VBE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 5 - COLLECTOR CUTOFF REGION
10
100
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 6 - CAPACITANCE
755
1000
./'" V
~E(Pk)
"
/
10
I
IC pk _
Isv
If I-Jt
I,v
...
V
i3
4.0
10''\,.........
ICpk -
90,.101
P--
2 3.0
2',IC
~
, ; 2.0
-- --\-'\ --- --- -- -- -
-
~
~
-;;;
5.0
g
I'
10% VCE(pk)
18
~ 6.0.
a::
a::
!-Ic~ f--
h
VCE
....
f--II'-
Iii -
T
"
iii' B.O I--IC= lOA_ f- TJ = 25°C
~f = 5.0
::IE
~ 7.0
90% VCE(pk) 1\901(,IC(Pk)
IC/
~
9.0
./
/""
V
V
/
V
V
1.0
I
o
1.0
2.0
3.0
4.0
5.0
6.0
VBE(off). BASE·EMITTER VOLTAGE (VOLTS)
7.0
B.o
TIME
FIGURE 8 - PEAK REVERSE CURRENT
FIGURE 7 - INDUCTIVE SWITCHING MEASUREMENTS
INDUCTIVE SWITCHING
1.0
5.0
i--/3fJ 5.0
TJ
.
_ 3.0
~
2.0
C[
a::
o
lii
_~
0.7
VBE(off) = 1.0 V
3
....
c.o
=75°C
1.0
0.7
0.5
.....--
-2.0
1.0 V
'sv
0.5
"-
VBE(off) = 5.0 V
i
3.0
--
I
1
1
;:::
"
0.2
0.1
15
20
2.0
~
ill
~
rl
.
0.5
0.3
0.2
~
~
0.1
~
0.07
~
f5
~
0.05
0.03
~
0.02
ie 5.0
:i
1-,,"
11+H+tttI==R=++++Wb~I:'~ruHH--I-l-++I-I.mJ.-I-l~~J.ml
0.05
i2.0
Z8JC(I) = r(l) R8JC
!§
~~~~~~~~~"o"~~ POWER
~Tmli(lr
0.01
0.01 0.02
0.05 0.1
0.2
-oj
0.5
1.0
2.0
5.0
TIME(...)
,,\
10
12
,~
5.0
7.0
10
IC. COLLECTOR CURRENT (AMPS)
!-
TC = 25°C
~
L
15
20
l.om.~
."
~ 0.2 I- --- BONDING WIRE LIMIT
!-
~O.I ~
0.05 1=
T 1Ht-++-HH+lfHl
50 100 200
I
1.0
o
I- P(pk)
20
~
. .
c-..; \.~
~~
~BE(Oi)= j'O
MJH13090
MJHl3091
t;
..fl.JL-*-
KJ,,--boI'H1I#1--H-I-H+I#I--t-t-l-Hl1tll-l
r,
I
~ 0.5
R8JC=I ..0·CIWMAX
READ TIME @II
TJ(pk),TC= P(pk) Z8JC(I)
~-t:bP+Il'Bt'~SI't-l-!++I#I--t-t-++ DUTY CYCLE, 0= 1111~2H+-JI-I-I+I-IIl
I I J..,.
!l!
:1i
I--tI-t1t-H~IH-t-I-H+t+H:::J""'Fl:::Iot5If!::::'-H-++Hittt-H-++I-IH+f1
~.J
I~'"
.1 ft~
..... r'-
~
.
0=0.5
~~O;";II~ill"~~
~.~
,,' ,,"
The Safe ()pentting Ar.. fieur. sIlown in Figur. 12 and 13 ar.
specified for these devices und.rthe test conditions shown.
20
I-15
10 "~,,
10
1-++-H-l~H-++-I-H+l+H-I-+-H-H:Ioi'IF..oIII'I"""~++I-+H+-H-I-~f++II
r....
3.0
. ..
/
~'
FIGURE 10 - CROSSOVER AND FALL TIMES
',Om_ __
0.7
10...
-Ie
--Iii
5.0
7.0
10
IC. COLLECTOR CURRENT (AMPS)
-"
<::::.:: ~- -.. ..... 1\
- - ............
1\ \
u;
..",-
~
'.r---.. ......
5.0 V
I
VBE(ol" ..= I.O~
~
FIGURE 9 - STORAGE TIME
g
TJ = 75°C
....30.3 ........
:!:
~
'Sy -
t:=~f~5.0
i---
--THERMAL LIMIT
(SINGLE PULSE)
- SECOND BREAKOOWN LIMIT
I'iiiO:
......
0.02
500 10k
5.0
FIGURE 11 TYPICAL THERMAL RESPONSE [(ZOJC(t))
10
20
50
100
200
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
450
FIGURE 1 Z - FORWARD81AS SAFE OPERATING AREA
756
100
~
24
22
0
f
20
~ 18
--MJH13090
-MJH13091
ii 16
~ 14
~ 12
lOoDC
pi;;': 4.0
a::
~ 10
;;! 8.0
86.0
.!i>4.o
~
"z
~
r
VSE(offl
2.0
100
I
200
\
\
a
\ ,\
Q
\ \\
=0 i'..
_\
'"
'"
"'\
VSE(offl
~JCOND
40
THERMAL
r-.....
BRLKDOWN !ERATING
........
20
DERAT~
f'-......
~
""'r-...
~~
~,
300
400
500
600
700
VCE. COLLECTOR· EMITTER VOLTAGE (VoLTSI
o
800
o
40
80
TC CASE TEMPERATURE (OCI
120
FIGURE 14 - POWER DERATING
FIGURE 13 - REVERSE BIAS SAFE OPERATING AREA
757
-
t'-....
"r-....
~
=1.0 10 5.0 V -
r-....
60
a:
1\
~V
............
"" '"
la:
\
~TJ';;;
,
r--....
,
'"
160
758
TIP120,121,
TIP122
NPN POWER DARLINGTON
TRANSISTORS
60-100 VOLTS
5 AMP, 65 WATTS
COMPLEMENTARY TO THE TIP125, TIP126, TIP127
High power switching applications, designed for hammer
drive, pulse motor drive and inductive load drive applications.
Features:
• High collector power dissipation:
PD=65W@TC=25°C
CASE STYLE TO-220AB
• High collector current: IC(DC) = 5A (Max.)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.404110.26)
.38019. 651
• High DC current gain:
hFE = 1000 (Min.) @ VCE = 3V, IC = 3A
-
+
TERM.1
COLLECTOR
.35519.021
.32518.251
~
{f;'IIII~n-,
TERM.2
---,
_
CASE
TEMPERATURE
REFERENCE
/
POINT
-r
.22015.591
~51
.001(0.0251
.500112.7IMIN.
.05511.391
.04511.141
TERM.3
.0331~.841
I
=5kO
.---
.26516.731
.24516.221
~.31
EQUIVALENT CIRCUIT
_______ _
-.
.19014.831
.17014.32Irl .05511.391
I
.04811.221
I--+--I----ti--f-""'-,
T
:~:~:~:~~:DIA
I
I·
1
• Complementary to TIP125, TIP126, TIP127
I
L
.
.
_ -t
BASE o-...;..-.~--r
~ ~~\~~~II
1.-L
.02710.691
I
I
I
I
__ ..JI
.IIL~.10512.671
~
~ •. 09512.411
.1
.05511.391
.04511.141---"
1+-.
I---
.21015.331
.19014.821
.10712.721
.08712.211
.02110.531
.01510.381
EMITIER
maximum ratings (T A = 25° C)
RATING
Collector-Emitter Voltage
(unless otherwise specified)
SYMBOL
VCEO
TIP120
60
60
TIP121
80
80
TIP122
100
100
UNITS
Volts
Volts
Volts
A
Collector-Base Voltage
Vcso
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@TC= 25°C
Operating and Storage
Junction Temperature Range
VESO
IC
ICM
Is
Po
5
5
8
0.1
2
65
5
5
8
0.1
2
65
5
5
8
0.1
2
65
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
°C
Thermal Resistance, Junction to Ambient
ROJA
62.5
62.5
62.5
°CIW
Thermal Resistance, Junction to Case
ROJC
1.92
1.92
1.92
°CIW
TL
260
260
260
°C
A
Watts
thermal characteristics
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
759
electrical characteristics (Tc
I
=25
0
C)
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
60
80
100
-
-
-
Volts
-
200
/-I A
0.5
mA
2
mA
off characteristics
Collector-Emitter Breakdown Voltage
(lc = 30mA)
TIP120
TIP121
TIP122
V8R(CEO}
Collector Cutoff Current
(VC8 = 80V)
IC80
-
Collector Cutoff Current
(VeE = 40V)
ICEO
-
Emitter Cutoff Current
(VE8 = 5V)
IE80
-
-
.~-----
-
"
-
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 13
on characteristics
DC Current Gain
(Ic = 0.5A, VCE = 3V)
(Ic = 3A, VCE = 3V)
hFE
1000
1000
Collector-Emitter Saturation Voltpge
(Ic = 3A, 18 = 12mA)
(Ic = SA, 18 = 20mA)
VCE(sat}
Base-Emitter Voltage
(Ic = 3A, VCE = 3V)
V8E(on}
-
-
-
-
-
-
-
2
4
V
V
-
-
2.5
V
ton
-
1.5
/-Is
toff
-
8.5
-
switching characteristics
Ic = 3A, RL = 10n
181 = -182 = 12mA
V8E(off) = -5V
Turn-on Time
Turn-off Time
6
6
1.4
5
...
4
if/'
ffi
0::
3
0::
0
r/
!d
..l
..l
~
8
0.8
-
0.6
0.5
..:--
~
,..-
g
f-- f--
.9
~
IV
4
::I
U
3
2
r .......I -
.,.",.. i""'"
0::
0
tiw
I
:!
IS=0.2mA
I"
0
.u
4
6
8
10
0.6_
.- .-
!"""'"
.-!!
--- -- ~
,!;
.- .-
I
IS=O.lmA
1
I
I
0
0
o
12
o
14
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VCE
FIG. 2
760
I-- I--
0.2
I
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
.......
.- .- .- .~
' / /~
~ , /~
ffi
0::
0::
0.4
o J
o
f-- f -
0.3
I--"
COMMON EMITTER
TC= 100'C
0.8
5
.....l-
-I- ~
fo""'"
I--I-- f -
--
/
(,. "...
0::
::I
U
1.0
1.2
'/ 10' ~ l - I--"
/''/ ..-l - I-"
g
.9
COMMON EMITTER
TC=25'C
IC - VCE
12
14
6
5.0
4.5
~ ~ V .......
~ i-'"2.5
~~
i-"""
It~ V
V
-~ 2.0
j..--"
f/l..--'"
........ ~
l- I-"
1.4
~
.9
ffiCC
VI- I-'"
CC
G
cc
~
:J
2
r...... l-
I-"
~ I--
I"""
I-- I-"
I--l - I--
~
I-- I--
<
Cl
!Z
w
cc
I
-<.u
3,0002 I-
0
0
0
I-- l I-- I--
0.4
/
/
1,000
V
0
10
12
200
0.03
14
"
w
0.3
10
3
COLLECTOR CURRENT IC (A)
FIG. 4
10
hFE - IC
5
COMMON EMITTER
IC/IB = 250
~
~
z
o
~
cc_
--
TC=-S5'C
i='>
V
Ie - VCE
Cl
i
v
0.1
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 3
",'> .JI'
./ 'I
500
IB = 0.2mA
6
.. ..s:,u
5,000
a:
::>
0.6
o
i,...oo-
w
u. 10,000
.r=
Z
1.0
o
COMMON EMITTER
VCE=3V
30,000
I-- I--
....
I-'"
I-- I--
8
50,000
COMMON EMITTER
TC=55'C
4.0
I'
0.3
~
3
COMMON EMITTER
ICIIB = 250
i-'"
0.5
0.3
TC = -55'C
' " 25
100
i.- 10-'''''
~ I-"
0.1
,...
25
0.1
0.05
100
0.03
0.05
0.03
0.1
0.3
1
3
10
0.03
30
0.1
COLLECTOR CURRENT IC (A)
FIG. 5
3
0.3
10
COLLECTOR CURRENT IC (A)
VCE(sat) - IC
FIG. 6 VBE(sat) -
Ie
10
COMMON EMITTER
VCE=3V
~
4
I
,
I-
I
3
cc
::>
0
cc
I
"
~
~
0
W
...J
...J
l
I
0
0
V
0
0.4
0.8
II
1.2
~
5
Z
0
3
~
i=
iL
~~
r-
~
~
1
Ie = 2OmA,IC = SA
.i'" 1--112
2
0.5
f-
3
I--
f-
1
I--
I--
...J
...J
0
1/
1.6
't---..
........
UJ
(!l
~
g
2.4
3
.........
a:
UJ
!=
.......... f::::- r::::: :::-r-
--
1.6
:;
UJ
W
~
III
-
'C=SA
r- t:" r- r-
.6'0
.....
"""-
I'-
II
II
I
"'r--." ..... ro-.
I'-
r- r-
0.8
~"e I
..
3
1
O.S
o
0.3
-80
-40
40
80
120
160
FIG. 9
30
10
CASE TEMPERATURE Tc ('C)
100
UNCLAMPED INDUCTIVE LOAD L (mH)
FIG. 10
VBE - Tc
IC - L (UNCLAMPED INDUCTIVE LOAD)
70
RthO-c)'; 1.92'CIW
'"
60
a:
0
I-
&l~
50
..J..J U
00.
U
'" '"
z
000
5~
40
'" '"
:::>0.
z-
~~
0 0
30
'" "'"'-
ua:
:!i~
;;!lr
"'-
20
X
<
:;
10
'" "
0
o
20
40
60
80
100
120
"
I'
140
160
CASE TEMPERATURE Tc ('C)
Pc - Tc
FIG. 11
20
I I 1111111
10
3.S
'iI!
'C MAX. (PULSED)·
Rth(j-a) ,; 62.S' CIW
-
'C MAX. (CONTINUOUS)
3.0
~
u
UJ;:
~
.9
2.S
..J..J U
z
"'0
:::>-
g~
z-00
1-00
zOO
UJ
~
........
1.S
;;!lr
(\ 01-
\
§UJ
t"--
..J
..J
0
...... r-.,.
1.0
U
.........
X
~
0.5
iI!
SINGLE NONREPETITIVE PULSE
Tc = 2S'C
0.3
.........
O.S
........
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
I'....
0
o
20
40
60
80
100
120
140
-111-
'\~'.\
~o ~
Z
ua:
:!i~
3
a:
a:
:::>
u
a:
2.0
t: ~~
----f
_______ _
---:l591
TERM.2
---,
I
IL
/
.325{B.251
~
I
TERM.l
COLLECTOR
TEMPERATURE
REFERENCE
.355{9.021
~.31
EQUIVALENT CIRCUIT
CASE
_
.1~.105{2.671
.107{2.721
.OB712.211
~ _.095{2.41 1
--.j 1+-'
I+-:-
.210{5.331
.190{4.B21
.021{0.531
.015{0.JBI
I
__ .JI
EMITTER
maximum ratings (TA = 25° C)
(unless otherwise specified)
TIP125
-60
-60
TIP126
-80
-80
TIP127
-100
-100
UNITS
Volts
Volts
-5
-5
-5
-5
-8
-0.1
2
65
Volts
A
2
65
-5
-5
-8
-0.1
2
65
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
°C
Thermal Resistance, Junction to Ambient
ROJA
62.5
62.5
62.5
.oC/w
Thermal Resistance, Junction to Case
ROJC
1.92
1.92
1.92
°C/w
TL
260
260
260
°C
RATING
Collector-Emitter Voltage
SYMBOL
VCEO
Collector-Base Voltage
VC80
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
VE80
IC
ICM
18
Po
-8
-0.1
A
Watts
thermal characteristics
Maximum Lead Temperature for Soldering
Purpose: Va" from Case for 5 Seconds
765
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
VBR(CEO)
-60
-80
-100
-
-
-
V91ts
Collector Cutoff Current
(VCS =-80V)
ICBO
-
-
-200
ILA
Collector Cutoff Current
(VCE =-40V)
ICEO
-
-
-O.S
rnA
Emitter Cutoff Current
(VES =-SV)
IESO
-
-
-2
rnA
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =-30mA)
TIP12S
TIP126
TIP127
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 13
on characteristics
DC Current Gain
(Ic = -O.SA, VCE =-3V)
(Ic =-3A, VCE =-3V)
hFE
1000
1000
-
-
-
-
-
-
-2
-4
V
V
-
-
-2.5
V
ton
-
1.S
toff
-
8.5
Collector-Emitter Saturation Voltage
(Ic =-3A, Is =-12mA)
(Ic =-SA, Is =-20mA)
VCE(sat)
Base-Emitter Voltage
(Ic =-3A, VCE =-3V)
VSE(on)
switching characteristics
Ic =-3A, RL = 100
IS1 = -IS2 =-12mA
VSE(Off) =SV
Turn-on Time
Turn-off Time
/. ~ ........
~
Z
w
a::
a::
=>
0
a::
V~
1// " .
~ .......
-3
0
I"""'"
-
-2
"..
~
,/"
I-
0
W
--'
--'
0
0
".
...-
-4
COMMON EMITTER
TC'2S'C
__ t""'
-2.0
-2.S
-3.0
-s
9
ILS
-6
-6
I-
-
---- -I"""'"
..-
t"""
-
-
t""'"
-1
-5
I
~
-1.0
I
I-
-0.6
a::
=>
0
a::
-0.3
15
a::
-
~
-
[~
-3
~ "
;t ~,.
-2
r
--'
--'
8
V
-1
Ie' -o.2mA
0
-2
.."
-4
9
0
0
o
~2.0
:::.- r...~
I-'
~ ; / ...- ...-
........:
-l.S
-0.4
-8
-4
-10
-12
o
-14
"
l- i - I"""'"
.",...
--
-
-
-----
r-
-1.5
~
-1.0
r.-
766
-
-0.4
I
-0.2
le,-o.l mA
J
o
-2
-10
FIG. 2
IC - VCE
I
-0.6
t""'"
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
COMMON EMITTER
TC'loo'C
-2.S
IC - VeE
I
-12
-14
10.000
-6
COMMON EMITTER
T C '-55'C
-6.0
-5
~
..9
-4
Z
w
a:
a:
;:)
V I--"" ~ ~ ..--~ ~ ~
-4.0
~ ~ L,...oo ~ 10-.-
L..- I-
-3.0
",,'"
~ i"""
-2.0
.c
·-1.4
«
C1
-3
0
I-
a:
~
1d
- l -I -
~ 10-
I
-
I
8
IS ·-0.6mA
-1
5,000
~I ,uL'
3,000
. . o~
>Z
w
a:
a:
;:)
0
0
-
c
~
,,<§l
/
V
w
IL
Z
-1.0
10-'"
-2
:l
-
~~
V.V
>-
COMMON EMITTER
VCe=3V
V
1,000
I
'" ~
f"(
V
-
Ig,
~
["'..
~
500
300
"'I..
....
I
1/
/
V
0
0
o
-2
-8
-10
-12
-0.1
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 3
\
100
-14
-0.3
-3
-1
-10
COLLECTOR CURRENT IC (A)
IC - VCE
FIG. 4
hFE - IC
-20
w
C1
COMMON EMITTER
lellS' 250
-10
i5...J
-20
~
w
C1
Z
0
~
-5
i=
iL
~:!.
...J
~
-3
iJii
a: -
-
w w
I:~
iw
rI:
-1
~
..J
-0.5
-
25
-
100
~~
-5
~~
-
-3
;:)
~i
a:>
W
-1
'"~
-1
-0.3
25
r==
-0.3
-6
w
C1
COMMON EMITTER
VCE=-3V
~
...J
WII
Z
,CJ
0
i=
a:
-2
/
..J
..J
8
I
-1
0
./
o
-0.4
-0.8
I
/
-1.2
IC= -sA
Is=-20mA
I:~
-2
-1
~
-
I-- I--
-3
-1
-12
w w
I
I-- I--
-1
F= F=
rI:
0
>-
-0.5
1d
:l
V
1/
I
i=~
II
J
-3
iJi i
a:-
~I flJ
~
"
...." J
0
I
iL
1/ V 1/
-3
COMMON EMITTER
-5
~
1/ J
J / I
-4
~
~
VBE{sat) - IC
-10
-5
;:)
-10
-3
-1
FIG. 6
FIG. 5 VCE{sat) - IC
a:
a:
~
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
~
..9
~
:...
100
-0.5
-0.1
-10
-3
OO!!I,;;~
TC' -55'C
~
iw
-0.3
-0.1
Z
Q
;
~
TC =-55'C
§
0
0
COMMON EMITTER
lellS= 250
-10
0
I
0
-0.2
IJ
-1.6
-80
-2.0
-2.4
-2.8
-40
o
40
80
120
CASE TEMPERATURE Tc ('C)
SASE-EMITTER VOLTAGE VSE (V)
FIG. 8
FIG. 7 IC - VBE
767
VCE{sat) - Tc
160
200
-20
-4.0
COMMON EMITTER
VCE = -3V
~
w
In
>
~
.9
z
w
-3.2
I-
~
-2.4
g
a:
w
~
-1;6
....
~
'"«
-0.8
U
~
-3
a:
I-
'" So"",
U
W
-3
-'
-'
0
-
-1
1
1·1 I
i~>e.
0
-
::;;
In
=>
IC=-5A
I'--..
r-...
-5
a:
a:
W
CI
VC=-20V
RBB2 = 10011
To = 25"C
SEE FIGURE 2
-10
r-- I-
u
I-
::;;
X
r"--r--r..
::;;
-1
=>
«
::;;
-0.5
o
-0.3
o
-40
-80
40
120
80
160
30
10
3
CASE TEMPERATURE To ("C)
100
UNCLAMPED INDUCTIVE LOAD L (mH)
FIG. 9 VBE - Tc
FIG. 10 IC - L (UNCLAMPED INDUCTIVE LOAD)
70
-...
Rth(j-o) S 1.92"CIW
60
"-
50
" "-
40
"
30
""
20
'\
""I"
10
o
o
20
40
60
80
100
120
I'\.
140
160
CASE TEMPERATURE Tc ("C)
Pc - Tc
FIG. 11
-20
I I IIIIIII *
-10
3.5
Rthu-.a) S6.25"CIW
-5
a:
~[
z
"'0
5~
z-
"
1.5
OO
ua:
~~
::;;0
_a.
w
a:
a:
=>
.......
I"-
a:
0
"'"
~-'
U
t-.....
20
40
60
80
100
'*
SINGLE NONREPETITIVE PULSE
Tc = 25"C
-0.3
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
r" "-
120
AMBIENT (FREE-AIR) TEMPERATURE Ta ("C)
FIG.12
-0.5
-'
0
l'
0.5
o
,,9t, \
-1
U
1.0
o
-a-"?
~
=>0.
-'"
z-
1-",
~
10.MQ, Cin ~ 11.5pF.
=
=
D. Resistors must be noninductive types.
E. The d·c power supplies may require additional bypassing in order to minimize ringing.
FIGURE 1.
RESISTlVE·LOAD SWITCHING
772
I
-:LJVOLTAGE WAVEFORMS
ADJUST FOR
Von =8.5VAT
-
STATIC FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
o
lk
VCE=4V
TC = 25°C
See Notes 5 and 6
.~
': 400
-=l!!c
1-100
l:
~
8
40
./
'E
~o
LL
10
4
1
0.001
0.004 0.01
0.04 0.1
0.4
Ic-Collector Current-A
NOTES: 5. These parameters must be measured using pulse techniques. tw = 300 "s. duty cycle" 2%.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
FIGURE 2. TYPICAL CHARACTERISTICS
FORWARD-BIAS SAFE OPERATING AREA
"w= 300lls, d= 0.1 =
1009l~~
40
= 1 ms, = 0.1 = 10%
lD'l1>
d
-10ms,d-0.l = 10%
1 1:~~IIIII!'/~;D~Ciiii~~Sie~ejNiMiem7m
_g'_
c
2!
:;
r:~
.!!
8I
9
I::~:A
0.4 r-r--
Tlr.,n ..
~=='Eli·nllillill
0.1
0.04/=
11111
1111111
0.01
L-...L-I....LUil.I.L---L--LJL..L.LIWUL.llJ-L..LJ.J..uu
1
4
10
40
100
400
Voltage-V
lk
VCE-Collector~Emitter
FIGURE 3
MA}(IMUM SAFE OPERATING AREA
NOTE 7. This combination of maximum voltage and current may be achieved only
when switching from saturation to cutoff with a clamped inductive load.
DISSIPATION DERATING CURVE
~
c
40
.
.
.g
~
is
30
fl
';:
.,
C
.",
D...
~
5::s
20
"
c
'w
c
<3
§
"-"
10
E
'i
~
.t oo
25
"
"
50
75
100
125
Tc-Case Temperature-oC
FIGURE 4 THERMAL INFORMATION
773
150
774
TIP 30 Series
PNP POWER TRANSISTORS
-40 - -100 VOLTS
-1 AMP, 30 WATTS
COMPLEMENTARY TO THE TIP29 SERIES
The TIP30 Series power transistors are designed for use in
general purpose amplifier and switching applications.
PNP
COLLECTOR
Features:
• Designed for complementary use with TI P29 series
EMITTER
• 30W at 25° C case temperature
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• -1A continuous collector current
:~~g\:·~~\rt
.OS511.39)
.
I
.04811.~21
.--
• -3A peak collector current
.26516.731
.24516.22)
• Minimum fT of 3 MHz at 10V, O.02A
/I---+--I.---....,fl--
• Customer-specified selections available
• Designed for power amplifier and high-speed switching
applications
~
~.3)
TERM.1
-tf;"~IIII-i+--,
TERM.2
CASE
_
.:~~~\~:~;\
+
. 1144S11133.·6S881IDIA.
.
TEMPERATURE
REFERENCE
/
POINT
-,
.220IS.S91
~SI
.001(0.0251
.SOOI12.7IMIN.
.OSSI1.391
.04SI1.141
TERM.3
.0331~.841
.02710.691
.1~.10SI2.671
.05S(1.391
.1
.04SI1.141--"
maximum ratings (T C = 25° C)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Cu'rrent - Continuous
Total PowerDissipation@ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
~ ,009512.4 11
1+-.
I+-
.210IS.331
.19014.821
~
.10712.721
.08712.211
.02110.531
.01SI0.381
(unless otherwise noted)
SYMBOL
VCEO
Vcso
VESO
Ic
ICM
Is
Po
TIP30
-40
-80
-5
-1
-3
-0.4
2
30
TIP30A
-60
-100
-5
-1
-3
-0.4
2
30
TIP30B
-80
-120
-5
-1
-3
-0.4
2
30
TIP30C
-100
-140
-5
-1
-3
-0.4
2
30
UNITS
Volts
Volts
Volts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
-65 to +150
°C
ROJC
4.17
4.17
4.17
4.17
°C/W
h
250
250
250
250
°C
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
775
electrical characteristics (T c
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
VCEO
-40
-60
-80
-100
-
-
Volts
-
-
-0.3
-0.3
mA
-
-0.2
-0.2
-0.2
-0.2
mA
-
-
-
-
-1
mA
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = -30mA)
TIP30
TIP30A
TIP30B
TIP30C
Collector Cutoff Current
(VCE =-30V)
(VCE = -60V)
TIP30, TIP30A
TIP30B, TIP30C
Collector Cutoff Current
(VCE = -80V)
(VCE = -100V)
(VCE = -120V)
(VCE = -140V)
TIP30
TIP30A
TIP30B
TIP30C
Emitter Cutoff Current
(VES = -5V, ·IC = 0)
ICEO
ICES
IESO
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE 3
FBSOA
on characteristics
DC Current Gain
(Ic = -0.2A, VCE = -4V)
(Ic = 1A, VCE = 4V)
hFE
Collector-Emitter Saturation Voltage
(Ic = -1A, Is = -125mA)
Base-Emitter Voltage
(Ic = -1A, VCE = -4V)
VCE(Sat)
VSE(On)
20
15
-
75
-
-
-
-
-0.7
V
-
-
-1.3
V
-
0.3
-
switching cha·racteristics
RL = 300, Ic = -1A
IS1 = IS2 = 0.1A
VSE(off) = 4.3V
Turn-on Time
Turn-off Time
ton
toft
1
f.1.s
INPUT
MONITOR
OUTPUT
MONITOR
1N914
RBB1 - 36
n
MO~~;~~ 4.~~ --l~;J-
2N4301
56n
1N914
1N914
V on --8.5V
1N914
--~
1 9 0%
I
I
I
I
ton-+ol
RBB2-S6 n
270pF
30 n
VBB1" 10V
ADJUST FOR
Von =-B.5VAT
INPUT MONITOR
VBB2 = 4.3 V
-r::---I
......
I
......toff-+1
rr--:L
I
=-+
OUTPUT
MONITOR
VOLTAGE WAVEFORMS
+
TEST CIRCUIT
NOTES: A. Vgen is a 30·V pulse into a 50 Q termination.
B. The V gen waveform is supplied by the following characteristics: tr < '5 ns, tf < '5 ns, Zout = 50 Q, tw = 20 ~s,
duty cycle < 2 %.
C. Waveforms are monitored on an oscilloscope with the following characteristics: tr < , 5 ns, Rin ;. '0 MQ, Cin < , '.5 pF.
D. Resistors must be noninductive types.
E. The d·c power supplies may require additional bypassing in order to minimize ringing.
FIGURE 1.
RESISTIVE·LOAD SWITCHING
776
I
STATIC FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
~~~~\?=l3II~iHII
VCE =-4V
.,.
0;; 1k
IX: 400 Tc = 25DC
~
See Notes 5 and 6 t-H-t+lHtt--t-+-l-HttH
]
.
~
100
c
~ 40
u=
"Eto
!
.f
10
u
~
w
II.
.c
4
1
- 0.001
-0.1
-0.01
Ic-Collector Current-A
-1
FIGURE 2. TYPICAL CHARACTERISTICS
NOTES:
5. These parameters must be measured using pulse techniques. tw = 300 ~s. duty cycle .. 2%.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
FORWARD-BIAS SAFE OPERATING AREA
100
"tw = 300 lIS. d =" 0.1 - 10%
tw = 1 ms, d = 0.1 = 10%
tw = 10 ms, d = 0.1 = 10%
DC Operation, See Note 7
40
1
10
4
~
u=
~bJl
~
ts
TlP30
"0 0.4 i==
I-- TIP30A
u
~
I
TIP30B
~ 0.1 i::=
r:TIP30C
0.04
..!!!
§
LIIIIIII
0.01
1
4
10
40 100
400 1000
VCE-Collector·Emitter Voltage-V
FIGURE 3
MAXIMUM SAFE OPERATING AREA
NOTE 7: This combina"tion of maximum voltage and current values may be achieved only
when switching from saturation to cutoff with a clamped inductive load.
DISSIPATION DERATING CURVE
":r.40
c
o
:1
..
.,
..6
is 30
I"
u
.;;
Q
c
=
20
""- ~
"
.~
8
~ 10
'2
=f
~
o
o
25
"r-...
"
E
.~
50
75
100
125
Tc-Case Temperature-DC
FIGURE 4
150
THERMAL INFORMATION
777
778
TIP 31 Series
NPN POWER TRANSISTORS
40-100 VOLTS
3 AMP, 40 WATTS
COMPLEMENTARY TO THE TIP32 SERIES
The TIP31 Series power transistors are designed for use in
general purpose amplifier and switching applications.
NPN
COL.L.ECTOR
Features:
• 40W at 2SoC case temperature
EMITTER
• 3A continuous collector current
-_·-rt
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• SA peak collector current
.404110.261
.11612951
f...'380196511.11012.791
I
.
-.l.
• Minimum fT of 3 MHz at 10V, O.SA
__ +
• Customer-specified selections available
_
t
19014831
--j
.----
.17014.321
.26516.731
24516.221
t
-
_
.35519.021
:~:~:~:~::DIA.
+32518.251
~
I
~.31
TERM.l
CASE
TEMPERATURE
REFERENCE
T
/
-!f;"~IIII4n----'
TERM.2
05511.391
.04811.:221
/
POINT
--:J.591
~51
.00110.0251
.500112. 71M IN.
.05511.391
.04511.141
TERM.3
.0331~.841
.02710.691
.!IH_j--.l0512.671
~ _ .09512.411
.055(1.391
.1
.04511.141-"
maximum ratings (T C =25° C)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current -:- Continuous
Peak
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
I-I--
.21015.331
19014.821
.
~
.10712.721
.08712.211
.02110.531
.01510.381
(unless otherwise noted)
VCEO
Vcso
VESO
IC
ICM
Is
PD
TIP31
40
80
5
3
5
1
2
40
TIP31A
60
100
5
3
5
1
2
40
TIP31B
80
120
5
3
5
1
2
40
TIP31C
100
140
5
3
5
1
2
40
UNITS
Volts
Volts
Volts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
-65 to +150
°C
ReJC
3.125
3.125
3.125
3.125
°CIW
TL
250
250
250
250
°C
SYMBOL
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
779
electrical characteristics (Tc = 25° C)
I
(unless otherwise specified)
I SYMBOL I
CHARACTERISTle
I
TYP
MAX
UNIT
40
60
SO
100
-
-
Volts
-
-
-
0.3
0.3
mA
-
-
0.2
0.2
0.2
0.2
mA
-
-
1
mA
MIN
off characteristics
Collector-EmJtter Breakdown Voltage
(Ic = 30mA)
tlP31
TIP31A
TIP31B
TIP31C
Collector Cutoff Current
(VCE= -30V)
(VCE= 60V)
TIP31, TlP31A
TIP31B, TIP31C
Cullr,ctor Cutoff Current
(\CE= SOV)
(VCE= 100V)
(VCE= 120V)
(VCE= 140V)
TIP31
TIP31A
TIP31B
TIP31C
Emitter Cutoff Current
(VEB =SV, IC =0)
VCEO
ICEO
ICES
lEBO
second breakdown
.I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 3
on characteristics
DC Current Gain
(Ic = 1A, VCE= 4V)
(Ic = 3A, VCE = 4V)
Collector-Emitter Saturation Voltage
(Ic = 3A, Is = 375mA)
B?se-Emitter Voltage
(Ic = 3A, VCE = 4V)
hFE
VCE(sat)
VBE(on)
25
10
--
50
-
-
-
-
1.2
V
-
-
1.S
V
-
0.5
-
Jls
switching characteristics
RL = 30n, Ic =1A
IS1 = IS2 = O.1A
VSE(off) = -4.3V
Turn-on Time
Turn-off Time
ton
tott
2
INPUT
MONITOR
OUTPUT
MONITOR
tN9t4
56n
ABBt =36 n
;!N53B5
1N9t4
tN9'4
von=a.5v--;;r;:-~D%
1N914
INPUT
OV-- ---10%
MONITOR - 4.3 V
I
I
RSS2=56n
270pF
30n
VBB2=4.t
~tDnt+
v-=:
I -I
I
~ toff
I
+
+
.=Vcc=30V
~----------------------~----.+
VSSt .. tOV
OUTPUT
MONITOR
ADJUSTF.OR
Von =9.5VAT
I.NPUT MONITOR
\l
I
1D%r-
90%'t-.r~
VOLTAGE WAVEFORMS
TEST CIRC!)IT
NOTES: A. Vgenisa ~.30.vpulseinIDa50QlerminaliDn.
B. TheV gen wayeform is su.pplied by Ihe following charaClerislics: t r '" 15 ns, II'" 150s, Zout = 50Q,Iw = 20~s,
duty cycle", 2%.
C. Waveforms are monitored on an oscilloscope with Iheloltowing characteristics: t r '" 15ns, Rin i> 10 MQ, Cin '" 11.5 pF.
D. Resislors must be nonlnciuciive Iypes.
E•. The d~c po'wer su.pPI.ie~ ma'y require' ~dditional byp~ssing j'n order to minimize ringing.
FIGURE 1.
RESISTIVe:LOAD SWITCHING
7S0
----
STATIC FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
..,
~o
J!!
400
lk
j
~s~~~~~l~~II~~1
VCE =4V
TC = 25°C
See Notes 5 and 6
;: 'OO~IIIIII
~
8
40
•••
"E!
~
~,o~n
~ 4p
w
II.
z:
'~~~WL~~UW~~~WL~~~
0.1
0.01
Ic-Collector Current-A
0.001
10
FIGURE 2. TYPICAL CHARACTERISTICS
=300 ~s. duty cycle" 2%.
NOTES: 5. These parameters must be measured using pulse techniques. tw
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
100
40
.!
SI
E
0.1
0.04
VCE-Coliector.Emitter Voltage-V
FIGURE 3
MAXIMUM SAFE OPERATING AREA
NOTE 7: This combination of maximum voltage and current may be achieved only
when switching from saturation to cutoff with a clamped
inductive load.
DISSIPA TION DERATING CURVE
, 50
c
'I
.;:; 40
I'\.
£5
.~
~
..
30
.~
20
::r
o
::r
c
"
8
E
~ 10
!
"
\..
""
'I\.
o
o
25
FIGURE 4
75
50
100
125
Tc-Case Temperature-oC
"
150
THERMAL INFORMATION
781
782
TIP 32 Series
PNP POWER TRANSISTORS
-40 - -100 VOLTS
-3 AMP, 40 WATTS
COMPLEMENTARY TO THE TIP31 SERIES
The TIP32 Series power transistors are designed for use in
general purpose amplifier and switching applications.
PNP
COLLECTOR
Features:
• Designed for complementary use with TIP31 series
• 40W at 25° C case temperature
EMITTER
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• 3A continuous collector current
.404(10.26) . ~ ~~\~.~~II
.380(9.651.j· I '
• SA peak collector current
I--..L
__ +
• Minimum fT of 3 MHz at 10V, O.SA
t
.190(4.831
'170(4'321~
.-----
.265(6.731
.245(6.22:
I
_
t--+----1I--------,fl--i-.....,
• Customer-specified selections available
+
:~:~g~~IDIA.
TERM.l
.355(9.021
.325(8.251
~
-tr;',III~r+--,
.055(1.391
.048(1.221
.
CASE
TEMPERATURE
REFERENCE
/ " POINT
---,
.220(5.591
---..t...
.00610.151
.001 (0.0251
.500(12.7IMIN.
TERM.2
TERM.3
.033(~.841
.027(0.691
.11tiJ--.
.055(1.391---1
.045( 1.141
maximum ratings (Tc
105 (2.671
~ •. 095(2.411
1---'
I---
.210(5.331
.190(4.821
r=*-l
.107(2.721
.08712.211
.021 (0.531
.015(0.381
=25° C) (unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
VCEO
VCSO
VESO
IC
ICM
Is
PD
TIP32
-40
-80
-5
-3
-5
-1
2
40
TIP32A
-60
-100
-5
-3
-5
-1
2
40
TIP32B
-80
-120
-5
-3
-5
-1
2
40
TIP32C
-100
-140
-5
-3
-5
-1
UNITS
Volts
Volts
Volts
2
40
Watts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
-65 to +150
°C
ReJC
3.125
3.125
3.125
3.125
°CIW
TL
250
250
250
250
°C
SYMBOL
A
A
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
783
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
-40
-60
-80
-100
-
-
-
-
-0.3
-0.3
mA
-
-
-0.2
-0.2
-0.2
-0.2
mA
-
-
-
-
-1
mA
MAX
UNIT
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = -30mA)
TIP32
TIP32A
TIP32B
TIP32C
Collector Cutoff Current
(VCE = -30V)
(VCE = -60V)
TIP32, TIP32A
TIP32B, TIP32C
Collector Cutoff Current
(VCE = -80V)
(VCE = -100V)
(VCE = -120V)
(VCE = -140V)
TIP32
TIP32A
TIP32B
TIP32C
VCEO
ICEO
ICES
Emitter Cutoff Current
(VES = -5V, Ic = 0)
IESO
-
Volts
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 3
on characteristics
DC Current Gain
(Ie = -4A, VCE = -1V)
(Ie = -3A. VCE = -4V)
Collector-Emitter Saturation Voltage
(Ic = -3A. Is = -375mA)
Base-Emitter Voltage
(Ic = -3A, VCE = -4V)
hFE
25
10
-
50
-
-
-
-
-1.2
V
-
-
-1.8
V
ton
-
0.3
toff
-
1
-
VCE(sat)
VSE(on)
switching characteristics
RL = 300, Ic = 1A
IS1 = IS2 = 0.1A
VSE(off) = 4.3V
Turn-on Time
Turn-off Time
JlS
INPUT
MONITOR
OUTPUT
MONITOR
lN914
RBBI = 36
.MO~~~t~~ --!~;J--~---
n
v o=-85V
n·
2N4301
56n
lN914
lN914
--_
1
I
lN914
I
I
I
1
270 pF
RBB2 = 56
RL = 30
n
n
ton
+
30
n
VBBI '" 10V
ADJUST FOR
V on =-8.5VAT
INPUT MONITOR
VBB2 = 4.3 V.=.
OUTPUT
MONITOR
I,.F
-=
VCC=30V
+
-+-I
I
I·
....
I
10%
VOLTAGE WAVEFORMS
NOTES: A. Vgen is a 30-V pulse inlo a 50Q lerminalion.
B. The Vgen wavelorm is supplied bylhe following characterislics: Ir'; 15ns,II'; 15ns.Zoul = 50Q,l w = 20,.s,
duty cycle'; 2 %.
C. Waveforms are monitored on an oscilloscope with the following characteristics: tr.l!it 15 ns, Rin ~ 10 MQ, Cin ~ 11.5 pF.
D. Resistors must be noninductive types.
E. The doc power supplies may require additional bypassing in order to minimize ringing.
784
I
I;:
TEST CIRCUIT
RESISTIVE-LOAD SWITCHING
Io4-loff ~
90%.f----1~10%L
-.-J
+
FIGURE 1.
90%
STATIC FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
1k
.2
VCE=-4V
1;;
TC = 25°C
': 400
See Notes 5 and 6
~
~
': 100
§
~
40 rr-
~
d
1!
I-
!
If
10
u
~...
4
w
.c
1
-0.01
-0.1
-1
IC-Collector Current-A
-0.001
-10
FIGURE 2. TYPICAL CHARACTERISTICS
=
NOTES: 5. These parameters must be measured using pulse techniques. tw
300,.... duty cycle'; 2%.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
FORWARD-BIAS SAFE OPERATING AREA
100
tw -
300ps, d = 0.1 = 10%
tw = 1 ms, d = 0.1 = 10%
tw = 10 ms, d = 0.1 = 10%
,/ D.C. Operation, See Note'
40
'C1
10
4
~
:;
u
~
~
F= ~
r= r-
TI P32
TI P32A
I-- I- TI
P32B
0.1
~ ~ TI P32C
.!!
0.4
'0
u
I
E
.
0.04
\ 1111\
0.01
11111 I
40 100
400
4
10
VCE-Coliector·Emitter Voltage-V
1
FIGURE 3
1k
MAXIMUM SAFE OPERATING AREA
NOTE 7: This combination of maximum voltage and current may be achieved only
when switching from saturation to cutoff with a clamped inductive load.
ifc
DISSIPATION DERATING CURVE
50
.
i5
..
.g
.~ 40
"-
.!:!
~
.
"co
"
.~
" .~
30
"
20
'\
o
u
E
E 10
.~
~
.t'
0
o
25
FIGURE 4
'"
r-...
75
50
100
125
Tc-Case Temperature-oC
'"
THERMAL INFORMATION
785
150
786
TIP 41 Series
NPN POWER TRANSISTORS
40-100 VOLTS
6 AMP, 65 WATTS
COMPLEMENTARY TO THE TIP42 SERIES
The TIP41 Series power transistors are designed for use in
general purpose amplifier and switching applications.
NPN
COLLECTOR
Features:
• Designed for complementary use with TIP42 series
EMITTER
• 6SW at 25° C case temperature
_·-rt
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
• 6A continuous collector current
.404110.26)
1161295)
1f...38019.65)-eoI·11012.79)
1-.1.
• 10A peak collector current
I-""""'"--i
__ + _
• Minimum fT of 3 MHz at 10V, O.SA
'1
.-- -
f
.26516.73)
.24516.22)
t
:~:~:~:~~:DIA.
_
.35519.02)
+
.32518.25)
~
I
~.3)
TERM.1
~11I14ri'---,
05511.39)
.04811.22)
.
CASE
TEMPERATURE
REFERENCE
T
/
• Customer-specified selections available
1901483)
-'
.17014.32)
/
POINT
~59)
~5)
.00110.025)
.500112.7)MIN.
TERM.2
TERM.3
.0331~.84)
.02710.69)
.055 1.39
.045 1.14)
maximum ratings (TC =25° C)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Total Power Dissipation @ T A = 25° C
@Tc= 25°C
Operating and Storage
Junction Temperature Range
.10712.72)
.08712.21)
.!h.J--.,0512.67)
~ •. 09512.41)
--l
1:=
.21015.33)
.19014.82)
.02110.53)
.01510.38)
(unless otherwise noted)
TIP41
40
80
5
6
10
TIP41A
60
100
5
6
10
TIP41B
80
120
5
6
10
TIP41C
100
140
5
6
10
3
3
3
3
A
2
65
2
65
2
65
2
65
Watts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
-65 to +150
°C
ROJC
1.92
1.92
1.92
1.92
°C/W
TL
250
250
250
250
°C
SYMBOL
VCEO
VCBO
VEBO
IC
ICM
IB
Po
UNITS
Volts
Volts
Volts
A
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
787
electrical characteristics (T c = 25 0 C)
I
(Unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
VCEO
40
60
80
100
-
-
Volts
-
-
0.7
0.7
mA
-
-
0.4
0.4
0.4
0.4
mA
-
-
1
mA
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 30mA)
TIP41
TIP41A
TIP41B
TIP41C
Collector Cutoff Current
(VCE=30V)
(VCE = 60V)
TIP41, TIP41A
TIP41B, TIP41C
Collector Cutoff Current
(VCE = 80V)
(VCE= 100V)
(VCE = 120V)
(VCE= 140V)
TIP41
TIP41A
TIP41B
TIP41C
ICEO
ICES
Emitter Cutoff Current
(VES = 5V, Ic = 0)
IESO
-
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE '3
FBSOA
on characteristics
DC Current Gain
(Ic = .3A, VCE = 4V)'
(Ic = 3A, VCE = 4V)
Collector-Emitter Saturation Voltage
(Ic = 6A, Is = .6A)
Base-Emitter Voltage
(Ic = 6A, VCE = 4V)
hFE
30
15
-
-
-
ton
-
0.6
toft
-
1
VCE(sat)
VSE(on)
-
-
1.5
V'
2.0
V
-
p's
75
switching characteristics
Ic =6A, RL = 50
IS1 = IS2 = 0.6A
VSE(otf) = -4V
Turn-on Time
Turn-off Time
INPUT
MONITOR
OUTPUT
MONITOR
tN9t4
S6n
RSSt ~ 10 n
~o"
VOn = 1 4 V - J : : INPUT
OV - MONITOR - 4 V
2NS38S
lN9t4
tN914
lN914
I
I
----- --10%
:
I
._
....., ton,
RBS2~
270pF
Vuen
tl'F
VSB2=4V,=
30n
OUTPUT
MONITOR
+
~----------------------~~-•• +
VSS,"'6V
TEST CIRCUIT
NOTES: A. V gen is a - 30-V pulse into a 50 12 termination.
B. The V gen waveform is supplied by a generator with the following characteristics: t r .. 15 ns. tf." 15 ns. Zout = 50 g,
tw
201'5, duty cycle .. 2%.
C. Waveforms are monitored onan.oscilloscope with the following chiuacteristics: t r .. 15 ns, Rin ;lo 10 Mg, Cin .. 11.5 pF.
D. Resistors must be noninductive types.
E. The doc power supplies may require additional bypassing in order to minimize ringing.
=
FIGURE 1.
RESISTIVE-LOAD SWITCHING
788
II
.
--Lf
VOLTAGE WAVEFORMS
AOJUST FOR
Von=t4VAT
INPUT MONITOR
•
!-I-..;- toff
I
10n
----
STATIC FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
o
VCE=4V
1000r~~~~~~~~I1~~~~
TC = 25°C
.~
400 See Notes 5 and 6 +-~I-HI#l+--I--++++HIl
a:
0.04 0.1
0.4
Ic-Collector Current-A
FIGURE 2.
NOTES: 5.
6.
10
4
TYPICAL CHARACTERISTICS
These parameters must be measured using pulse techniques. tw = 300 ~s. duty cycle .. 2%.
These parameters are measured with voltage~sensin9 contacts separate from the current·carrying contacts.
FORWARD-BIAS SAFE OPERATING AREA
~~I~~tw~";~
300~,d~='~01"~'1"'~'1i~)%
tw = 1 ms, d = 0.1 = 10%
100
40 ~
f--++-I4+IA+.I-, tw = 10 ms, d = 0.1 = 10%
«
10
/ D.C. Operation See Note 7
~4 I=:
~.m.
• •
I!!
8
i
8~ 0.4 !~~IIII~~~III!~~~~~III
t~:~:~A;
0.04
iiiiiil;T1P4~1B'llliil
O.Ot
1111
L-...l-L..LUllll...--.l.......LJL.ll.IllL....LL.......L..J....LllJIJ
_uO.1
I
IIr
1.0
4
10
400 1000
40
100
VCE - Collector - Emitter Voltage - V
FIGURE 3
NOTES: 7.
MAXIMUM SAFE OPERATING AREA
This combination of maximum voltage and current may be achieved only
when switching from saturation to cutoff with a clamped inductive load.
DISSIPA TION DERATING CURVE
3f
80
c
o
l
.s:
70
~
is 60
8
'g;
"
""
50
..S 40
Q
·s"c
8
30
~
!1:
'" '"
'\
E 20
o
25
FIGURE4
t'-.
"-
""
50
75
100
125
Tc-Case Temperature-oC
THERMAL INFORMATION
789
150
790
TIP 42 Series
PNP POWER TRANSISTORS
-40 - -100 VOLTS
-6 AMP, 65 WATTS
COMPLEMENTARY TO THE TIP41 SERIES
The TIP42 Series power transistors are designed for use in
general purpose amplifier and switching applications.
PNP
Features:
• 65W at 25° C case temperature
EMITTER
• 6A continuous collector current
• 10A peak collector current
-'--1. I
404(1026)
.1161295)
110 (2.79)
If.--'
.380(9.65)
• Minimum fT of 3 MHz at 10V, O.5A
-L
_ _+
• Customer-specified selections available
f
'190(483)rt 0551139)
170(4.32)
:04611' 22)
--j
-.--- __
.265(6 73)
.245(6.221
_
rL.--l---+---~f1--r"""
:~:ig:~~:DIA.
+
CASE
TEMPERATURE
REFERENCE
/
POINT
:~~~\~'.~~:-------r
~
.130(3.3)
f
TERM.I
~59)
•
.gg~(~rii~)
.500(12.7)MIN.
TERM.2
TERM.3
.0331~.84)
.027(0.69)
.1~~.105(2.67)
.055(1.39)
.1 \--'
.045(1.14)---"
.210(5.33)
.190(4.62)
f---
maximum ratings (TC
~
~".095(2.41)
.107(2.72)
.067(2.21)
.021 (0.53)
.015(0.36)
=25° C) (unless otherwise noted)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Total Power Dissipation @ TA = 25°C
@Tc=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VC80
VE80
IC
ICM
18
Po
TIP42
-40
-80
-5
-6
-10
TIP42A
-60
-100
-5
-6
-10
TIP42B
-80
-120
-5
-6
-10
TIP42C
-100
-140
-5
-6
-10
-3
-3
-3
-3
A
2
65
2
65
2
65
2
65
Watts
TJ, TSTG
-65 to +150
-65 to +150
-65 to +150
-65 to +150
°C
ROJC
1.92
1.92
1.92
1.92
°C/W
TL
250
250
250
250
°C
UNITS
Volts
Volts
Volts
A
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
791
electrical characteristics (T c = 25 0 C)
I
(unless otherwise specified)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNIT
-40
-
Volts
-80
-100
-
-
-
-
-0.7
-0.7
mA
-
-
mA
-
-0.4
-0.4
-0.4
-0.4
-
-
-1
mA
off characteristics
Collector-Emitter Breakdown Voltage
(Ic =30mA)
TIP42
TIP42A
TIP42B
TIP42C
Collector Cutoff Current
(VCE =-30V)
(VCE =-SOV)
TIP42, TIP42A
TIP42B, TIP42C
Collector Cutoff Current
(VCE =-80V)
(VCE =-100V)
(VCE =-120V)
(VCE =-140V)
TIP42
TIP42A
TIP42B
TIP42C
VCEO
-so
ICED
ICES
Emitter Cutoff Current
(VES =-5V, IC =0)
IESO
-
second breakdown
I
FBSOA
Second Breakdown with Base Forward Biased
SEE FIGURE 3
on characteristics
DC Current Gain
(Ic =-.3A, VCE =-4V)
(Ic =-3A, VCE =-4V)
Collector-Emitter Saturation Voltage
(Ic =-SA, Is =-.SA)
Base-Emitter Voltage
(Ic =-SA, VCE =-4V)
hFE
30
15
-
75
-
-
-
-
-1.5
V
-
-
-2
V
ton
-
0.4
J.Ls
toft
-
0.7
-
VCE(sat)
VSE(on)
switching characteristics
RL =5!l, Ic =-SA
IS1 = IS2 =O.SA
VSE(off) = 4V
Turn-on Time
Turn-off Time
INPUT
MONITOR
OUTPUT
MONITOR
lN914
Reel ~ 10 n
INPUT
MONITOR
56
n
2N4301
lN914
lN914
~~ --"KI!.%;I--~--I
V on --14V
lN914
--1I
I
I
I
I
Ree2 = 10
270 pF
I
n
ton.....
90%
I
14--
I
104- toff -+1
I
Vee2=4V =.
30n
veel ~ 16V
ADJUST FOR
Von' -14 V AT
INPUT MONITOR
OUTPUT
MONITOR
1 "F
-=
VCC =30V
+
y~
VOLTAGE WAVEFORMS
+
TEST CIRCUIT
NOTES: A. V gen is a 30·V pulse into a 50 Q termination.
B. The V gen waveform is supplied by a generator with the following characteristics: tr ~ 15 n5, tf ~ 15 n5, Zout = 50 Q,
tw = 20JJs. dutycycJe~ 2%.
C. Waveforms are monitored on an oscilloscope with the following characteristics: tr ~ 15 ns, Rin ~ 10 MQ. Cin ~ 11.5 pF.
D. Resistors must be noninductive types.
E. The d·c power supplies may require additional bypassing in order to minimize ringing.
FIGURE 1.
RESISTIVE-LOAD SWITCHING
792
I
STATIC FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
1~~~~ll-~~~W-~~~~
-0,4 -1
'-4 -10
-0.01 -0.04 '-()of
Ic-Collector Current-A
FIGURE 2.
TYPICAL CHARACTERISTICS
FORWARD-BIAS SAFE OPERATING AREA
VCE - Collector·Emitter Voltage - V
FIGURE 3 MAXIMUM SAFE OPERATiNG AREA
NOTE 7: This combination of maximum voltage and current may be achieved only
when switching from saturatio.~ to cutoff with 0 clamped inductive.load.
DISSIPATION OERA TING CURVI:
~ 80
c
.~ 70
a.
~
r--60
.~
it 50
Q
""-
~ 40
=
c
""- ~.
",
~ 30
B
§
20
S
.;
'i
10
J:
0
o
25
"'\
,
'"
..
50
75· 100 '125
TC-CaSe TemperatUre-OC
FIGURE 4 THERMAL INFORMATION
793
150'
794
2N3055
NPN POWER TRANSISTORS
60 VOLTS
15 AMP, 115 WATTS
General purpose power transistor designed for power regulator, switching and solenoid drive applications.
NPN
COLLECTOR
Features:
• High gain at high current
• Low saturation voltage: VCE(sat)
< 1.1V,
@IC=4A,
IS =O.4A
• Excellent safe area of operation.
EMITTER
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.B45121.47)
M A X ' g .35BI9.o9) MAX
'~"~~'W"O~~'
0.04311.09)
0.03BI0.97)
DIA.-.J
I
I-
.42611O.B2) MIN.
CASE TEMP.
REFERENCE
POINT
.2015.00)
0.162(409)
a 15(3.B4)
2 HOLES
0.44o(11.1B)
0.420(10.67)
maximum ratings (T A = 25° C)
(unless otherwise specified)
7
UNITS
Volts
Volts
Volts
15
A
7
115
0.66
A
Watts
W/oC
TJ, TSTG
-65 to +200
°C
R8JA
R8JC
1.52
°C/W
°C/W
h
260
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
SYMBOL
Collector Current - Continuous
IC
Base Current - Continuous
Total Power Dissipation@TC=25°C
Derate Linearly Above 25°C
Operating and Storage
Junction Temperature Range
IS
Po
VCEO
Vcso
VESO
2N3055
60
100
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
795
electrical characteristics (T c = 25° C)
I
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Sustaining Voltage
(Ic = 200mA)
VCEO(sus)
60
-
-
Volts
Collector-Emitter Sustaining Voltage
(Ic = 200mA, RBE = 100.0)
VCER(sus)
70
-
-
Volts
CHARACTERISTIC
off characteristics
Collector Cutoff Current
(VCE = 30V)
ICED
-
-
0.7
mA
Collector Cutoff Current
(VCE = 100V, VEB(off) =-1.5V)
(VCE = 100V, VBE(off) = -1.5V, TC = 150°C)
ICEX
-
-
5
30
mA
-
Emitter Cutoff Current
(VEB = 7V)
lEBO
-
-
5
mA
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE5
FBSOA
on characteristics
DC Current Gain
(Ic = 4A, VCE = 4V)
(Ic = 10A, VCE = 4V)
hFE
Collector-Emitter Saturation Voltage
(Ic = 4A, IB = .4A)
(IC = 10A, IB = 3.3A)
VCE(sat)
Base-Emitter Voltage
(Ic = 4A, VCE = 4V)
VBE(on)
20
5
-
-
70
-
-
-
-
1.1
8
V
V
-
-
1.8
V
500
Te= l00'C
300
w
LL
s;
Z
;;:
~
~
25
100
C1
fZ
COMMON EMITTER
:l
g
.9
fa:
a:
~t/:
::J
a:
0
8
l3
w
....
....
0
0
4
~r
~
0.01
0.3
0.1
0.4
10
3
FIG. 2
hFE - IC
0.3
0.2
0
~
a:_
0.03
.
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
FIG. 1
IC - VCE
0.5
~~
0.3
:i~
'1'<
a:f-
0.1
< ;::~!
w w
J:~
1]
6
I
z
0.05
4
II
COMMON EMITTER
IC/IB= 10
0.1
2
0.03
COLLECTOR CURRENT IC (A)
.IB = 0.01 A
o
~
5
0.6
~
o
I
10
0.8
--
-55
COMMON EMITTER
VCE=4V
1.0
~~ ......-
w
,
C
I
~
IV ,.
12
Z
0
1.5
V'"
50
30
0
0
16
2
w
::J
a:
a:
Tc = 25'C
0""
l3§1
w
....
....
$
o
I,
IT.
~~~1:
-
0.05
~
0.03
0
()
~
0.01
0.D1
0.03
0.1
....
3
0.3
COLLECTOR CURRENT IC (A)
FIG. 3
796
VCE(sat) - IC
10
30
~~.
10
10
~
l1b.
COMMON EMITTER
ICIIS= 10
0" "
IW
0:
0:
3
"
:;)
U
~
I ' '·25
0
0.2
CURVES MUST BE DERATED LINEARLY
WITH INCREASE IN TEMPERATURE.
U
0.01
0.3
0.1
0.03
3
10
., '
\ 1\
\\,
I
SINGLE NONREPETITIVE PULSE
Tc = 25'C
*
w
....
....
100
G'
1
0:
0.5
\
<".1', ~1<:'\.
Z
*
..l
'o~"'~'?," \
.Y
Tc = 55'C
~*
~
~
3
\
~"%.* ~ \
(CONTINUOUS)
5
II
*
IC MAX. (PULSED)
'"
~
COLLECTOR CURRENT IC (A)
FIG. 4
VBE(sat) - Ie
x
«
:::;
0
w
U
>
0.5
3
10
100
30
COLLECTOR·EMITTER VOLTAGE VCE (V)
FIG. 5
SAFE OPERATING AREA
16
~
~
.Y
~
If.i"·
ll
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
20
O.B
30
0.4
,
"
\
~
0
0.01
IC. COLLECTOR CURRENT (AMP)
I' ""'"
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 8 - DC CURRENT GAIN
FIGURE 9 - COLLECTOR SATURATION REGION
802
10
HIGH POWER
2N3772
NPN POWER TRANSISTORS
60 VOLTS
20 AMP, 150 WATTS
These high power NPN power transistors are designed for
linear amplifiers, series pass regulators, and inductive switching applications.
NPN
COLLECTOR
Features:
• Forward biased second breakdown current capability
ISlb = 2.SA@VeE=60V
EMITTER
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
if
0.845121.471
MAX.
.35819.09) MAX
":"~#----=t ~"" ,~"'
0.043(109)
DIA
0.03810971
---..I\-
426(10.821 MIN
I
CASE TEMP
REFERENCE
POINT
.2015.001
EMITTER
0.1621409)
0.1513.84)
2 HOLES
0.440(11.18,
O.420r 10.67)
maximum ratings (TA = 25° C)
(unless otherwise specified)
2N3772
60
100
UNITS
Volts
Volts
7
20
30
5
15
150
0.855
Volts
Watts
W/oC
TJ, TSTG
-65 to +200
°C
ROJC
1.17
°C/W
h
260
°C
SYMBOL
RATING
Collector-Emitter Voltage
Collector-Base Voltage
VCEO
Vcso
VESO
Ic
ICM
Is
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Total Power Dissipation @ T C =25° C
Derate above 25° C
Operating and Storage
Junction Temperature Range
Po
A
A
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
803
electrical characteristics (Tc =25° C)
(unless otherwise specifi~d)
I SYMBOL I
MIN
VCEO(sus)
Collector-Emitter Sustaining Voltage
(Ic =.2A, VEB(off) = -1.5V, RBE = 100 Ohms)
I
TYP
MAX
UNIT
60
-
-
Volts
VCEX
80
-
-
Volts
Collector Cutoff Current
(VCB = 100V)
ICBO
-
-
5
rnA
Collector Cutoff Current
(VCE = 50V)
ICEO
-
10
Emitter Cutoff Current
(VEB = 7V)
lEBO
-
-
CHARACTERISTIC
off characteristics
Collector-Emitter Sustaining Voltage
(IC = .2A)
5
rnA
second breakdown'
I Seoond Breakdown with Base Forward Biased
FBSOA
SEEFIGURE3
on characteristics
DC Current Gain
(Ic = 10A, VCE = 4V)
(Ic = 20A, VCE = 4V)
hFE
Collector-Emitter Saturation Voltage
(Ic = 10A, IB = 1.0A)
(Ic = 20A, IB = 4A)
VCE(sat)
Base-Emitter Voltage
(Ic = 10A, VCE = 4V)
VSE(on)
i
I
~
150
125
100
0.3
'=
"
0,2
"'
...~
...........
i'-..
III
0.1
.......
.........
'1i
0,03
I!:
V
V
-
2.2
V
-
0,2
....
~
0.05
::::
....
~
BJC(I) = r(l) BJC
BJC = 0.875'C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME @II
TJ(pk) - TC = P(pk) BJC(I)
125
150
0,01
~
"1
DUTY CYCLE. D= 11/12
~~~LE PUL
E
..nJL.-'-
~tl"'~p~)
0.02
i3
~
...........
100
0.05
!;!
i'-..
75
!z
'"in
25
50
1.4
4
II:
50
25
-
~0.07 .... 0.02
..........
75
o
o
~
2i
II:
-
-
d ~'b~5
f-
!.
175
-
-
1.0
0.7
a:: 0.5
5
60
-
o
200
-
15
5
0.01
'"
0.02
175 200
!
0.05 0.1
0.2
0.5
1.0
2.0
5.0
1111
'II~ ·1 I 111111
10
20
50
100 200
TIME (ma)
TC. CASE TEMPERATURE (OCI
FIGURE 2- THERMAL RESPONSE
FIGURE 1 - POWER DERATING
804
500 1000 2000
40
~
:E
5
30
I I
20
I J
I1
2N3772
IZ
a:
g;
o
'"'c3
-
10
7.0
-
- - - - - -
5.0
3.0
2.0
2.0
I,D
I'
dc' ~{q;
-?)",
" ."
,
1L
5.0
7.0
1
1.0ms
"
51
100 ms
-" 1\
-=
1"lf$10ns
DUTY CYCLE = 1.0%
,r\
I'
20
50
30
-=
-4 V
RB ANO RC ARE VARIED TO. OBTAIN DESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, ego
MBD5300 USED ABOVE IB .,,100 mA
MS06100 USEO BELOW IB ~IOO mA
2N3772 I
10
SCOPE
RB
'11'1
TC = 25°C
BONDING WIRE LIMITED
THERMALLY LIMITED I
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED I' ..
CURVES APPLY BELOW RATED VCEO
3.0
RC
200 fJS
,
I
I I
II
1',
I'
PULSE CURVES APPL Y
FOR ALL DEVICES
40jlS
,,"
1.0
IC = 2.0 A
o
!'.... "
0,5 0.7
II
~
i
......... i'..
10
7.0
5.0
0.3
1.6
...
......
r--
...
ell
-55 DC
~
2.0
~
o
30
IC. COLLECTOR CURRENT (AMP)
1\
t 1-00
0
om
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 9 - COLLECTOR SATURATION REGION
FIGURE 8 - DC CURRENT GAIN
806
10
2N3773
NPN POWER TRANSISTORS
140 VOLTS
16 AMP, 150 WATTS
The 2N3773 is a power transistor designed for high power
audio, disk head positioners and other linear applications. The
device can also be used in power switching circuits such as
relay or solenoid drivers, dc to dc converters or inverters.
NPN
COLLECTOR
Features:
EMITTER
• High safe operating area: 150 W @ 100 V
CASE STYLE TO-204AA (TO-3)
• Completely characterized for linear operation
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
H
'~~"*~ 'W'" "M'
r:
0.B45121.47)
MAX.
• High DC current gain and low saturation voltage
hfe = 15 (Min) @ 8 A, 4 V
VCE(sat) =1.4 V (Max) @ IC =8 A, IS =0.8 A
0.04311.09)
0.03BI0.97)
• For low distortion complementary designs
DIA.-II-
.358(9.09) MAX
426110.82) MIN
CASE TEMP.
REFERENCE
POINT
.20(5.00)
0.16214.09)
0.1513.84)
2 HOLES
0.440(11.18)
0.420(10.67)
maximum ratings (TA
=25
0
C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Peak
Total Power Dissipation @Tc= 25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
2N3773
140
160
7
16
30
4
15
150
0.855
UNITS
Volts
Volts
Volts
TJ, TSTG
-65 to +200
°C
ROJC
1.17
°C/W
h
260
°C
SYMBOL
VCEO
VCSO
VESO
IC
ICM
Is
Po
A
A
Watts
W/oC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
807
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
VCEO(sus)
140
-
-
Volts
VCEX
160
-
-
Volts
ICEO
-
-
10
mA
Collector Cutoff Current
(VCE =140V, VSE =-1.5V)
(VCE = 140V, VSE =-1.5V, Tc =150°C)
ICEX
-
-
2
10
mA
Emitter Cutoff Current
(VES =7V)
IESO
-
-
5
mA
CHARACTERISTIC
off characteristics
Collector-Emitter Sustaining Voltage
(IC =.2A)
Collector-Emitter Sustaining Voltage
(Ic = .1mA, VES(off) =1.5V, RSE = 100 Ohms)
Collector Cutoff Current
(VCE =120V)
second breakdown
I Second Breakdown with Base Forward Biased
SEE FIGURE 4
FBSOA
on characteristics
DC Current Gain
(IC =8V, VCE = 4V)
(Ic = 16A, VCE =4V)
Collector-Emitter Saturation Voltage
(Ic = 8A, Is =800mA)
(IC = 16A, Is =3.2A)
hFE
VCE(Sat)
Base-Emitter Voltage
(IC =8A, VCE =4V)
300
200
CI
::::::-550 C
~
a:
a:
=>
.....
.....
CI
W
70
50
60
-
-
-
-
1.4
4
V
V
-
-
2.2
V
-
...
0
?!
250 C'-- '-
~
zw
-
~ 2.0
150°C
z
;;: 100
VSE(on)
15
5
w
r--; ~ r--......
CI
«
1.6
~
0
>
a:
w
1.2
~
VeE = 4 V
~
w
~
20
ci: 0.8
0
~
.....
w
LL
.c:
10
7.0
5.0
0.2
......
0.4
>
0
0
.....
w
.....
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
I\,
IC = 8 A
~
30
IC = 4A
,
\
...
--
- TC = 25°C
I I I II
0.05 0.07 0.1
IC = 16 A
.....,
I""--
0.2
0.3
......r--
-
0.5 0.7
1.0
2.0
3.0
lB. BASE CURRENT (AMPS)
IC. COLLECTOR CURRENT (AMPSI
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
808
~
2.0
u;
f)
leila = 10
1.6
l'
II V
I-
-'
'f'
0
~
w
1.2
'"«
I-
VBE(sad
-'
0
> 0.8
>'
250 e
'/
VCE(sad
150°C I-"
~
::::: ~
0.2
0.3
0.5 0.7
1.0
2.0
25°C
I J10
I
a
J
://
t;::,
1--"""
Isooe
-
0.4
-
~
3.0
5.0 7.0
20
IC. COLLECTOR CURRENT (AMPS)
FIGURE 3 - "ON" VOLTAGE
30
20
.....
-'-
. .....
.......... .....
de
.. ......
.
........... ~ ....
10
-
1"'"... 1' ........ ......
Ii:'
5.0
~ 3.0
~
2.0
2:
~
w
a:
a:
;:)
....
1'00
...
- ....... ll0J,l~.....
....
.....40J,ls_
....
~
...
~
.... 1"" ...
~-
100J,ls=
200 J,lS=
1.0 ms,
_100 ms
1\.'-
1.0
500 ms
c.:I
a:
0
~
c.:I
w
-I
-I
0
c.:I
0.5
0.3
0.2
BONDING WIRE LIMIT
- THERMAL LIMIT
@ TCASE = 25 0 C, SINGLE PULSE
SECOND BREAKDOWN W IT
--,.-
0.1
i)
0.05
0.03
5.0 7.0
3.0
10
20
30
50
70
200
100
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 4 - FORWARD BIAS SAFE OPERATING AREA
100
~ 80
rr
0
I-
<.>
...«
~
""- l'...
"-
60
THERMAL
DERATING
'"
z
;::
«
rr 40
w
t'-...
c
rr
w
;;:
c
a.
20
40
" "-
"
.......
'" "'"
80
120
160
TC. CASE TEMPERATURE (OC)
FIGURE 5 - POWER DERATING
809
'"
200
300
810
2N6292
NPN POWER TRANSISTORS
70 VOLTS
7 AMP, 40 WATTS
. These general-purpose medium-power transistors are intended for a wide variety of medium-power switching and
amplifier applications, such as series and shunt regulators and
driver and output stages of high-fidelity amplifiers.
NPN
COLLECTOR
Features:
EMITTER
CASE STYLE TO-220AB
• Low saturation voltages
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.404110.26] . ~ ~~\;.~~\
.38019.651 .j. I ·
• Thermal-cycling ratings
• Maximum safe-area-of-operation curves specified for dc
operation.
I-.i.
__ + _ -.-
.
I
.19014.831
.17014 321~ .05511.391
.
1
.04811.221
.---.
.26516.731
.24516.221
+
:~:m~~:DIA.
.35519.021
/
.32518.251
--:J.591
~
I
.rrrloWI~:+---,
POINT
~51
~.31
TERM.l
CASE
TEMPERATURE
REFERENCE
•
~-+--I-----tl-T
/.-
.001(0.0251
.500112.71MIN.
TERM.2
TERM.3
.0331~.841
.02710.691
.05511.39)
.I
.04511.141---'
maximum ratings (TA = 25° C)
.10712.721
.08712.211
.11hJ--.l0512.671
~ _.09512.411
1+-.
I+-
.21015.33)
.19014.82)
.021(0.53)
.01510.38)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current - Continuous
Total Power Dissipation@TA = 25°C
@TC=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCSO
VESO
Ic
ICM
IS
PD
2N6292
70
80
5
7
UNITS
Volts
Volts
Volts
A
3
1.8
40
A
Watts
W/oC
TJ, TSTG
-65 to +150
°C
ROJA
ROJC
70
3.125
°C/W
°C/W
h
235
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
811
= 25° C)
electrical characteristics (Tc
(unless otherwise specified)
A~"._""'.
;;'TIVIDVL
t''''ADA'''~I:D'~~''''
.............. ,,~ • . . . . . ...,.IV
II
M--'-t.,;
n
MAX
UNIT
off characteristics
Collector-Emitter Sustaining Voltage
(Ic =.1mA)
VCEO(Sus)
70
-
-
Volts
Collector-Emitter Sustaining Voltage
(Ic =.1mA, Ie =1.5V)
VCER(sus)
80
-
-
Volts
Collector Cutoff Current
(VCE =60V)
ICEO
-
-
1
rnA
Collector Cutoff Current
(VCE =75V, VEe =1.5V)
ICEX
-
-
0.1
rnA
Emitter Cutoff Current
(VEe =5V)
IEeO
-
-
1
rnA
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE2
on characteristics
DC Current Gain
·(Ic =2A, VCE =4V)
(Ic =7A, VCE =4V)
Collector-Emitter Saturation Voltage
(Ic =2.5A, Ie =.25A)
(Ic =7A, Ie =3A)
Base-Emitter Voltage
(Ic =2A, VCE =4V)
(Ic =7A, VCE = 4V)
hFE
VCE(sat)
VSE(on)
COLLEJTOR-TO-E~lriER Ivo~TAGE (vc!) =4V
CASE TEMPERATURE (TC)
30
2.3
-
150
-
-
-
1
3.5
V
V
-
-
1.5
3
V
10
CASEITEMPErTrE (TCI
= 2S"C
10
-
=2S"C
IC MAX (CONTINUOUS)
L.ooJ...-"
V
V
<>~
~
I'-
~
1\
g
•I
!Z
I\.
\
'10
4
M!
a:
:::l
o
a:
~: :
1\
8
2
~
'1--
(~
~~¢
"-
1
0.8
0.6
0.4
=
=
=
lI-- VCEO MAX. =70V
VCEO MAX. 30V
VCEO MAX. 25V
VCEI MAX. SOV _
0.2
l~
I
o
Islb • LIMITED
V
0.1
4
0.0
6
8 0.1
4
6
8
1
1
4
FIG. 1
6
8 10
20
40
80 100
200
400
COLLECTOR·TO-EMITTER VOLTAGE (VCE) - V
COLLECTOR CURRENT (IC)-A
FIG. 2
TYPICAL GAIN-BANDWIDTH
812
MAXIMUM OPERATING AREA
1000
10
8 I- IC MAX. (CONTINUOUS) - CASE TEMPERATURE (TC) = l00·C
400
COLLECTOR-TO-EMITTER VOLTAGE (VCE)
iii
IL
;.
I
II:
~
~
II:
lIZ
W
II:
II:
I
~
~
UI
I
I
-~
=125·C
-~
-
80
-40°C
eo
~
40
:>
:-1'--
~
oo
0.02
0.04
0.1
0.2
0.4
0.6 0.8 1
......
I"
0.6
~
VCEO MAX. = 70V
(2N6292 & 2N6293)
o. 1
6 8 10
Islb - LIMITED
\/
0.2
4
2
COLLECTOR CURRENT MT (IC) - A
FIG. 3
.........
0.4
6
0,01
~O
:>
~~
"~~
10
i'~
a:
a:
1
o
ex: 0.8
~
"
""-
20
"S:-9J>.o,\<
~
~'"
0
0
0%-/,0
g
~
i!2
"",01
'!'
r--- ......... r--
~
100
=4V
•
CASE TEMPERATURE (TC)
200
0
I
6
8 10
20
40
60
COLLECTOR TO EMITTER VOLTAGE (VCE)-V
TYPICAL CHARACTERISTICS
FIG. 4
MAXIMUM OPERATING AREA
COL~ECTOR-T~-EMITT~ VOLTA~E (VCE) ~ 4V
CASE TEMPERATURE (TC)
=125.~,
II'
25"/-40·C
~/
V
V/ V/ V
/ V/ V
0.2
V ~V
0.4
0.6
0.8
1
1.2
SASE-TO-EMITTER VOLTAGE (VSE) -
FIG.S
1.4
1.6
V
TYPICAL TRANSFER CHARACTERISTICS
CAS~ TEMPERhuRE (T~l = 25·C
COLLECTOR-TO-EMITTER VOLTAGE (VCEI - 4V
300
0
<
~
250
200
:>
II:
w
"::;
150
w
I-
w
en
<
OJ
I-
a:
W
0
w
~
Z
a:
a:
W
en
<
100
0
I
SO
o
'f
t:.
a:
I-
:>
b
~
0"
E
~
"
0
0
0.1
.J 1)./
~
~ 4
I
I
a:
a
~
~
8
I
I
3
2
SASE CURRENT (Is) = 250 rnA
200mA
,
~
~
,
15,!!!!!
-,
100mA
'",
SOmA
V
1.
'..=.. _ !2,W.
20 rnA
10mA
f"'"
4
SASE-TO-EMITTER VOLTAGE (VsEI - V
FIG. 6
.
10
12
14
16
COLLECTOR-TO-EMITTER VOLTAGE (VCE) - V
TYPICAL INPUT CHARACTERISTICS
FIG. 7
813
TYPICAL OUTPUT CHARACTERISTICS
80100
814
2N6487
NPN POWER TRANSISTORS
60 VOLTS
15 AMP, 75 WATTS
These are designed for use in general-purpose amplifier and
switching applications.
NPN
COLLECTOR
--©
Features:
• DC Current Gain specified to 15 Amperes
hFE = 20-150 @ IC = 5.0 A
5.0 (Min) @ IC = 15A
EMITTER
=
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERSI
.::~I~.~~ '19014'831~
17014321 '-I
.055(1.391
• Collector-Emitter Sustaining VoltageVCEO(sus) = 60 V (Min)
.404110.26]
.38019.651 -I.J..' .
I
__ +
• TO-220AB Compact Package
-.
.
1
...----,
..
I
.26516.731
.24516.221
,
.L--+--I-----Ifr-;-.,
r
.35519.021
.32518.251
~
f
'
.04811.221
CASE
TEMPERATURE
REFERENCE
~
OINT
~591
.g~I~~;ll
.13013.31
TERM.l
TERM.2
TERM.3
.033~
-tr~~lIIio!i+-,
' ' 'r"''
111tiJ-.l0612.671
.027!~~ .,.09 512.411
.0551.39
,I
. 51.14 - . ,
maximum ratings (TA = 25° C)
1--'
j.-
.2106.33
.1804.821
(unless otherwise specified)
SYMBOL
VCEO
VeBO
VEBO
2N6487
60
70
5
UNITS
Volts
Volts
Volts
Collector Current - Continuous
Ie
15
A
Base Current - Continuous
Total Power DiSSipation @TC = 25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
IB
Po
5
75
0.6
A
Watts
W/oC
TJ, TSTG
-65 to +150
°C
RBJA
RBJe
70
1.67
°C/W
°C/W
TL
260
°C
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
815
electrical characteristics (Tc
I
=25° C) (unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
Collector-Emitter Sustaining Voltage
(Ic = 200mA, IB = 0)
VCEO(sus)
60
-
-
Volts
Collector-Emitter Sustaining Voltage
(IC = 200mA, VBE = -1.5V)
VCEX
70
-
-
Volts
Collector Cutoff Current
(VCE = 30V, IB = 0)
ICEO
-
-
1
mA
Collector Cutoff Current
(VCE = 60V, VEB(OFF) =-1.5V, Tc = 150°C)
ICEX
-
-
5
mA
Emitter Cutoff Current
(VEB = 5V, Ic = 0)
lEBO
-
-
1
mA
CHARACTERISTIC
off characteristics
second breakdown
I Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE5
on characteristics
DC Current Gain
(Ic = 5A, VCE = 4V)
(Ic = 15A, VCE = 4V)
Collector-Emitter Saturation Voltage
(IC = 5A, IB = .5A)
(IC = 15A, IB = 5A)
Base-Emitter Voltage
(IC = 5A, VCE = 4V)
(Ic = 15A, VCE = 4V)
-
-
1.3
3.5
V
V
-
-
1.3
3.5
V
-
VCC
+30 V
.........
3.0
"
60
125 1'5
r---..
i=
«
"-
2.0
40
..........
a:
w
s:
1.0
TA
20
........
'"
~
~
...............
o
20
40
60
80
Scope
Re
51
""
..............
o
__
--1:V-O
Te
"-
o
1
+1:~O
"
..........
0
C
-
-
80
z
"-
150
Te
0
i5
VBE(on)
-
4.0
en
f-
en
en
VCE(sat)
20
5
TA
!;;:
~
hFE
100
Duty Cycle = 1.0%
~
~~
120
140
D1
-4 V
Re and RC varied to obtain desired current levels.
For PNP reverse all polarities.
160
TC. CASE TEMPERATURE lOCI
D1 must be fast recovery type. e.g.;
M eD5300 used above Ie'" 1 00 mA
MSD6100 used below Ie '" 100 mA
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
FIGURE 1 - POWER DERATING
816
500
"
:§
~....
200
100
50
mmEII
6" 1
0.7 , 0 m
. .
1000
I~
,
-NPN
- -PNP
TC = 25 0 C
20 VCC =30 V
ICIIB = 10
I
ill
10
0.5
0.2
.....
-
......
-
Id@VBE (off) '" 5.0 V
-...:
20
~
10
w
5.0
....z
a:
a:
::l
(,,)
a:
....
Q
(,,)
w
......
.....
=
D=0.5
"
HI-I-I+H-l1ft1l-#--1-H-l1ft1l--I--I---1-~~~i.IfII!~H+-IHI-+l-+++l-HH
III
O_~t;
0.2
H:;-++++tltF=R++l-lffH1i..1'~~fHj!ll-+++I-H.JHt+Hl+l+HfIl
~
0.1
CURVES APPLY FOR POWER
~~§i9~~~il~Mj R8JC= D1.67·CIWMAX
~.J
.... ~
-
~IO~.II~-I-tH*r+-I--~Mtffi7~~~
_
•
ZsJC(I) = r(l) RSJC
~
a 0.07 - 0.05
~~~ET;~~I:I~HOWN
LL
~ 0.05
~
TJ(pk)- TC = P(pk) ZsJC(I)
-~,I
i
0.03 ...~
1 L..~-i.I'FHI'F-++--I-+I-HI~++--I--141
~
0.02
~
10
0.5
0.3
~
--
1.0
2.0
5.0
IC. COLLECTOR CURRENt (AMP)
FfGURE 3 -TURN-ON TIME
iii:'
:;;
-
10-
~
~
~
20
DUTY CYCLE. D= 11/12
-tr,-
Ijf i'ioli(II
0.01
0.01
0.02
0.05 0.1
11110-1
0.2
II
0.5
11
.....
"
_
100"s
500"s=
"-
\. 1.0 mS-I
11
5.0ms=
Q
~
0.2
0.1
2.0
-.j
E
..:
1.0
2.0
5.0
TIME (ma)
10
12
2N6487
I
I
4.0
10
20
40
60
VCE. COLlECTOR·EMITTER VOLTAGE (VOLTS)
de-
II
80
FIGURE 5 - ACTIVE-REGION SAFE OPERATING AREA
817
H+-t+HtiIH
T
I- P(pk)
20
50
FIGURE 4 - THERMAL RESPONSE
TJ = 1500 C
2.0 -SECOND BREAKDOWN LIMITED .....
---BONDING WIRE LIMITED
1.0 - --THERMALl Y LIMITED @TC = 25 0 C
CURVES APPL Y BELOW RATED VCEO
0.5
(,,)
.J1JL-1.
100 200
SOD 10k
5000
1000
--
700
1000
~ 500
- ...
-
~ts
w
~
-
200 t--
-
If
ioo-.I.
f=
_i"""
-
--NPN
~ 300
~
~
--
c.i
100 t:::: Iclla = 10
1=
50
0.2
lal = la2
TJ = 25°C
....
r-
- - NPN
--
r-.. .....
'::::::
-- --
Cob
-
100
-
-~
(.)
f- VCC=30V
1=
~ ~ ::.....
...
...<~ 200
.1
.. Cob
...
...
r-
TJ = 25°C
70
2.0
5.0
1.0
0.5
IC. COLLECTOR CURRENT (AMP)
10
I
50
0.5
20
I
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 6 - TURN·OFF TIME
500
r-- f--
III TJ=1150 0 C
~r--..
rrr---.. r-... ~
~ 100
w
a:
a:
·55 0 C
50
r-...
......
::>
(.)
(.)
c
20
..... r-.
.... t-.
["\..
....W
.c:
so
20
FIGURE 7 - CAPACITANCES
200
t!I
IZ
-
...... .....
~
VCE=2.0V
10
5.0
0.2
0.5
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (AMP)
FIGURE 8 - DC CURRENT GAIN
~ 2.0
...J
c
1.8
~
1.6
2:.
I-
...J
IC = 1.0 A
ii'
4.0 A
t; 0.6
w
...J
0.4
(.)
0.2
(.)
>
0
5.0
10
-
20
w
f- T~ = 25 0 C
2.0
/
t!I
//
"/
1.6
<
I-
1\
~ 0.8
c
2:.
\
w
-
C
i\
:: 1.0
u:.
2.4
ti;
~ 1.4
c
;;; 1.2
5
2.8
J
TJ = 25°C I-
...J
c
1\ I
>
8.0 A
:>
.... 10'
1.2
VaE(sat) = IC/IB = 10
0.8
I\..
~.
'11
.... ~
VCE(sat) @Ic/la = 10
o
1000
2000
5000
0.2
0.5
/
.... i-""
5.0
1.0
2.0
IC. COLLECTOR CURRENT (AMP)
FIGURE 10 - "ON" VOLTAGES
FIGURE 9 - COLLECTOR SATURATION REGION
818
/
,.,
VaE@VCE=2.0V
0.4
50
100
200
500
lB. BASE CURRENT (rnA)
-::: ~
~
10
20
2N6547
NPN POWER TRANSISTORS
400 VOLTS
15 AMP, 175 WATTS
The 2N6547 transistor is designed for high-voltage, highspeed power switching in inductive circuits where fall time is
critical. It is particularly suited for 115 and 220 volt line
operated switch-mode applications such as: switching regulators, PWM inverters and motor controls, solenoid and relay
drivers, and deflection circuits.
Features:
NPN
COLLECTOR
EMITTER
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r: t-f
-::;.~~-t """'" .~,
• High temperature performance specified
0.845121.471
MAX
• Reversed biased SOA with inductive loads
• Switching times with inductive loads
Q.043{1.09)
• Saturation Voltages
OIA
0.03810971
---..J L_
I r
.358(9.09) MAX
426{10.82) MIN
• Leakage currents
CASE TEMP
REFERENCE
POINT
2015.001
0.16214.091
0.1513.841
2 HOLES
0.440(11.18)
0420110.671
maximum ratings (TA = 25° C)
(unless otherwise specified)
RATING
Collector-Emitter Voltage
SYMBOL
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current Base Current -
Continuous
Peak
Continuous
Peak
Total Power Dissipation @TC = 100°C
@TC= 25°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
VCEO
2N6547
400
UNITS
Volts
VCEX
450
Volts
VEBO
9.0
Volts
IC
ICM
15
30
A
IB
IBM
Po
10
20
A
100
175
1.0
Watts
W/oC
TJ, TSTG
-65 to +200
°C
R8JC
1.0
°C/W
TL
275
°C
thermal characteristics
Thermal ReSistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: Va" from Case for 5 Seconds
819
electrical characteristics (Tc
=25
0
C)
(unless otherwise specified)
CHARACTERISTIC
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = 100mA)
VCEO(sus)
400
-
-
Volts
Collector-Emitter Sustaining Voltage
, (IC = 8.0mA, Vclamp = Rated VCEX, Tc = 100°C)
(Ic = 15A, Vcl amp = Rated VCEO -100V, Tc = 100°C)
VCEX
450
300
-
-
Volts
Volts
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = -1.5V)
(VCEV = Rated Value, VBE(off) = -1.5V, TC = 100°C)
ICEV
-
-
1.0
4.0
mA
-
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50n., Tc = 100°C)
ICER
-
-
5.0
mA
Emitter Cutoff Current
(VE8 = 9.0V)
IE80
-
-
1.0
mA
second breakdown
Second Breakdown with Base Forward Biased
Clamped Inductive SOA with Base Reversed Bias
SEE FIGURE7
SEE FIGURE8
on characteristics
DC Current Gain
(IC = 5A, VCE = 2V)
(Ic = 10A, VCE = 2V)
hFE
Collector-Emitter Saturation Voltage
(IC = 10A, 18 = 2A)
(IC = 15A, 18 = 3A)
(Ic = 10A, 18 = 2A, Tc = 100°C)
Base-Emitter Saturation Voltage
(Ic = 10A, 18 = 2.0A)
(Ic = 10A, 18 = 2.0A, Tc = 100°C)
VCE(Sat)
VBE(sat)
12
6
-
60
30
-
-
-
1.5
5.0
2.5
V
-
-
1.6
1.6
V
-
-
-
.05
P.s
switching characteristics
Resistive Load
Delay Time
VCC = 250V, Ic = 10A
td
Rise Time
IB1 = 182 = 2A, tp = 100p.s
tr
Storage Time
Duty Cycle
< 2.0%
ts
Fall Time
tf
100
SO
-1_
....z
30
2~DC
::>
20
t:I
a::
a::
e.>
e.>
"~
_.... - -
10
~
~
- r-.....
-
-SSDC
"I 1 1 1 1
0.3
O.S
1.0
1
I
-f
I
.2.0
3.0
I I
TJ= 25 0 C_
1.6
~
o
I .....
~
....~
1\
"~
...
~
1.2
l\~
,
~
10A-I- 15A
,
t-
....
~ 0.4
W
~
20
1.
1
e.>
e.>
~
10
1
0.8
c
o
5.0. 7.0
5.0A
IC = 2.0 A
~
i
vCP 2.0V
- - - VCE=10V
7.0
S.O
0.2
0.7
c
...;..:::
c
W
...
.c
-
-'
--,.......
;;:
t-
1.0
4.0
~ 2.0
TJ = lS0DC
70
z
-
"
"or---
\.
r-
0
0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
IC. COLLECTOR CURRENT (AMP)
Ic. COLLECTOR CURRENT (AMP)
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - COLLECTOR SATURATION REGION
820
1.4
.1.
I
-TJ =25°C
1.2
en
I-
1.0
-'
VBE(sal)@ Ic/lB =5.0
-
0
Z- o.s
w
'"<
I-
-'
--
0.6
VBE(on)@VCE =11
2.0 V
-
r--:
--
~
I--'"
I I I
0.2
1.0
0.5
0.3
2.0
!!:!
1.0
~
w
0.5
c..>
0
I I I fr
1
-0.5
<
!:j -1.0
3.0
5.0 7.0
10
-2.0
-2.5
0.2
20
'1'
0.3
0.5 0.7
vJ_
~
1.0k r--
-..
~
2:
"
300
100
70
50
---
0.1
0.2
c..>
0::
o
t; 0.2
~ O. 1~
0.0 5~
8
"-
I"""
~
........
:-1.0 k
....
2:
i= 700
~ 500
II
"-
300
0.5
1.0
2.0
5.0
10
100
0.02
20
0.05
0.1
.....
0.2
V
0.5
1.0
2.0
5.0
FIGURE 6 - TURN-OFF TIME
.,..
1.0ms
.....
1001'S
~
3
::E
5
12
VCEX(su;)--
0:
o
20
-
SbA
t; B.O
'"
""-
'1
LU
-'
-'
I
VBE(off) .. 5 V
_ VCEO(sus)
U 4.0 !--TC" lOooCI
I
I
VctsUS)
o
u
2N6547
100
~
=>
u
~
0.02
0.0 1 CURVES APPLY BELOW RATED VCEO
0.005
20
30
50 70
5.0 7.0 10
Z
LU
......
TC = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
16
...
de ......
.....
10
20
10 ns
-,..,
5.0 ms
---
......
FIGURE 5 - TURN-ON TIME
I
7.0
10
VCC = 250 V
ICIIB = 5.0
IBI = IB2
TJ = 25°C
IC. COLLECTOR CURRENT (AMP)
I-
2.0
1.0
0.5
5.0 7.0
IC. COLLECTOR CURRENT (AMP)
20
~
10
::E
~ 5.0
~
3.0k
Id@VBE(off) =5.0 V
0.5
I
3.0
-..c
50
0::
0::
:::l
-
200
30
0.02
2.0
ts
2.0k
i= 200
--
10 k
7.0 k
5.0 k
.-
700
500
1.0
-"
-550C 10 250C
FIGURE 4 - TEMPERATURE COEFFICIENTS
Vec =250
IcllB =5.0
TJ =25°C
Ir
-
IC. COLLECTOR CURRENT (AMP)
FIGURE 3 - "ON" VOL TAGE
'\
-I-- r-
I I ,
IC.COLLECTOR CURRENT (AMP)
3.0 k
2.0 k
J..,t'
0VB lor VBE
::E
~ -1.5 I - -
i
/
/
25 0lCto '150bC
IL
--
J-l-f-
-55 0e to 25°C
1:!
i-"
V
2rCrr~
'OVC lor VCE (sal)
W
0::
J
/
VCE(sal)@ Ic/lB =5
1.5
o
>
>- 0.4
o
~
~
0
0.2 -
e..
~
L
i-'
i-'
.' '.'.' ".'
2. 5
lor ICIIB" hFE/3
-'
2.0 f-- 'Applies
G
l&'
h
-
200
o
300 400
o
100
200
300
400
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
FIGURE 7 - FORWARD BIAS SAFE OPERATING AREA
FIGURE 8 - REVERSE BIAS SAFE
OPERATING AREA
821
500
1.0
100
I
~t-.....
"- ..............
~ BO
"
==
o
t;
THERMAL
DERATING
~ 60
C!I
!!:
.......
~
ffi
f'--..
I'..
40
==
~
.......
~
.....
40
80
I
a!
I'..
120
160
~.J
200
Z9JC(I) = r(l) R9JC
RBJC = 1.0·CIW MAX
CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READTIME@ll
TJ(pk) • TC = P(pk) Z9JC(I)
o
0.07 1-0.05
0.03
~
0.02
rJ!,
~ "
tjf rmiinr
1
0.00.01
TC. CASE TEMPERATURE (OC)
"'I:""
~
0.1
iii
~
I-
II
0.1
..
Ii
II'"
II
0.2
~ 0.05
"
0=0.5
~
...........
'"
o
I:
..............
0
0
I
SECOND BREAKDOWN
OERATING-
~
~
CI
r---....
I
0.02
0.05 0.1
0.2
DUTY CYCLE. 0= 11112
JlSl...J..
~Il~~ pT
(pk)
"I 12
0.5
1.0
2.0
5.0
10
20
50
TIME (ml)
FIGURE 9 - POWER DERATING
FIGURE 10 - THERMAL RESPONSE
822
100 200
500
10
HIGH VOLTAGE/HIGH SPEED
2N6676,77,78
NPN POWER TRANSISTORS
300-400 VOLTS
15 AMP, 175 WATTS
GE EQUIVALENT D64VS3, 4, 5
The 2N6676, 2N6677 and 2N6678 series of NPN power
transistots is designed for use in power switching applications requiring high-voltage capability, fast switching speeds
and low-saturation voltages. These devices are optimized to
provide a unique combination of ultra-low switching losses
and high safe-operating area (SOA), ideally suited for off-line
Switching Power Supplies, converter circuits and pulse width
modulated regulators.
NPN
Q
COL.LECTOR
~()
-.-
EMITTER
CASE. STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.845(21.471
I-""~~'.""
.0~~X65l~
Features:
T
• 100°C maximum limits specified for:
• Switching times
• Saturation voltages
• Leakage currents
• RBSOA (VCEX
0.043(1.091
0.03810.971
DIA.-j
f.-
[.,
MAX.
1
= 350 to 450V) at rated IC continuous.
• Very fast turn-off: tf
SEATING PLANE
< 100 nsec (typ.)
!
426110.82) MIN
0.675(17.15)
0.650(16.51)
re
,...t-~ 1197~30401
CASE TEMP.
REFERENCE ~~)+
~
o~o~
POINT
.20(5.00)"
@ 15A -Inductive Load
EMITTE:
~ \.@.;
BA5~./
0.162(4.09)
DIA.
0.1513.841
2 HOLES
...j
1.177129.90)
1'.573139.96)
MfX
0.22515.72i'-COLLECTOR
1-'0.20515.21)
ICASEI
0.440(1118)
0.420110.67)
maximum ratings
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector C~rrent - Continuous
Peak(1)
Base Current - Continuous
Peak(1)
Emitter Current - Continuous
Peak(1)
Total Power Dissipation @Tc= 25°C
@Tc= 100°C
Derate above 25° C
Operating and Storage
Junction Temperature Range
2N6676
300
350
450
8
15
20
5
10
20
30
178
111
1.0
2N6677
350
400
550
8
15
20
5
10
20
30
178
111
1.0
2N6678
400
450
650
8
15
20
5
10
20
30
178
111
1.0
UNITS
Volts
Volts
Volts
Volts
A
TJ, TSTG
-65 to +200
-65 to +200
-65 to +200
°C
R8JC
1.0
1.0
1.0
°CIW
h
235
235
235
°C
SYMBOL
VCEO
VCEX
VCEV
VESO
Ic
leM
Is
IBM
IE
IEM
PD
A
A
Watts
WloC
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purpose: W' from Case for 5 Seconds
(1) Pulse Test: Pulse Width
=5ms. Duty Cycle S; 10%.
823
electrical characteristics (T c
I
=25
0
C)
(unless otherwise specified)
CHARACTERiSTiC
SYMBOL
MiN
iviAX
UNii
-
Volts
off characteristics
Collector-Emitter Sustaining Voltage(1)
(Ic = 100mA, Is = 0)
2N6676
2N6677
2N6678
VCEO(sus)
300
350
400
Collector-Emitter Voltage
, (Ic = 15A, IS1 = 3A, IS2 = 3.0A)
(VSE(OFF) = -6V, L = 50 JLh)
2N6676
2N6677
2N6678
VCEX
350
400
450
Collector Cutoff Current
(VCEV = Rated Value, VSE(off) = -1.5V)
(VCEV = Rated Value, VSE(off) = -1.5V, Tc = 100°C)
ICEV
Emitter Cutoff Current
(VES = 8V, Ic = 0)
IESO
Volts
mA
-
0.1
1.0
-
2.0
mA
second breakdown
Second Breakdown with Base Forward Biased
FBSOA
SEE FIGURE 13
Clamped Inductive SOA with Base Reversed Bias
RBSOA
SEE FIGURE 14
on characteristics
DC Current Gain
(Ic = 10A, VCE = 2V)
(Ic = 15A, VCE = 3V)
hFE
-
10
8
-
-
0.7
1.5
2.0
-
1.5
1.5
fT
15
50
Small Signal Current Gain
(lc = 2.0A, VCE = 10V, ftest = 5 MHz)
hFE
3
10
-
Output Capacitance
(VCS = 10V, IE = 0, f = 0.1 MHz)
Cos
150
500
pF
Tc
td
25°C
0.1
100°C
0.2
JLs
tr
0.6
1.0
JLsec
ts
2.5
4.0
JLsec
tf
0.5
1.0
JLsec
Collector-Emitter Saturation Voltage
(Ic = 10A, Is = 2.0A)
(Ic = 15A, Is = 3.0A)
(lc = 15A, Is = 3.0A, Tc = 100°C)
Base-Emitter Saturation Voltage
(lc = 15A, Is = 3.0A)
(lc = 15A, Is = 3.0A, Tc = 100°C)
VCE(SAT)
VSE(SAT)
Volts
Volts
dynamic characteristics
Current Gain - Bandwidth Product
(Ic = 1.0A, VCE = 10V, ftest = 1.0 MHz)
switching characteristics
MAXIMUM
Resistive Load (See Figure 17 for Test Circuit)
Delay Time
VCC = 200V, IC = 15A
Rise Time
Storage Time
MHz
IS1 = IS2 = 3A, VSE = -6V
tp = 20 JLsec
Fall Time
Inductive Load, Clamped (See Figure 17 for Test Circuit)
Storage Time
Vcc = 200V, Ic = 15A
ts
3.0
4.5
Fall Time
VCLAMP = Rated VCEX
tf
0.3
0.6
JLS
JLsec
tc
0.5
0.8
JLsec
Switch Time
IS2 =3.0A, VS~OFF~ = -6V
L = 50JLh, Rc _ 13. n tp = 20 JLsec
(1) Pulse Duration =300j.Ls, Duty Factor :52%. Do not measure on a curve tracer.
• In accordance with JEDEC Registered Data.
824
TYPICAL DC CHARACTERISTICS
3
100
TJo+ISO·C
80
60
I-
40
-
..:::-. ""'C.;
-
-
TJ.... 2S·C
-_or
~
""""':::::
z
~
-
_
__
TJI·-6S·C
20
~
z
UJ
0:
0:
1--
II
.....
f:::: ::--
......
I ' ....
I--.
r-... r-....
......
2
~~
I'"'=~>'
\
\
4
:J:
\
-
VCE =2V
2
I
I
1.0
...........
rTc ·2S·C
VCE'IOV - - -
2
4
6
8
10
15
.02
.05
IC ,COLLECTOR CURRENT (AMPERES)
~
6.0
4.0
~_
2.0
Tc '2SoC
V
/3,= lellBI
0:1/)
!i
6.0
g0.4
-
...-
~>
0:_
0.2
~ :....-::::: ~
0.1
~ ~ 2.0
=
/3,=8
/3,=6 _
2.0
S.O 7.0 10.0
/3,'15
I
/
Te=IOOoC
/
/3f=l e /IBI
~~
V
e~ ~
l!l1.0
0.8
~ 50.6
::J>
8, 0.4
k:::; ~ .......
ii.,
iii
~
OJ
1.0
1.0
I- ::::; .
/3,=10
~ 1--:::1"'"
./"'"
4.0
'"
~ 0.6
.05
10.0
8.0
~
/
UJUJ
...J
.5
0:
/3f= 15
~~
~ ~ 1.0
:iii - 0.8
~
Z
o
_
.2
FIGURE 2. COLLECTOR SATURATION REGION
10.0
8.0
!i0:
--
.1
"'-
IS' BASE CURRENT (AMPERES)
FIGURE 1. DC CURRENT GAIN
S
u,
ii.,
1IC=ISA
I
~
~
I
8
6
u
c,
a:
I
"
II
~'5A r- r- Ic'IOA
r - - -1~'211l
10
a
I
2
4
6
8 10.0
Ie, COLLECTOR CURRENT (AMPERES)
15
0.2
...-...-
0.1
~
2
FIGURE 3. VCE(satl vs IC. TC = 25°C
~
V.
,..
...............
~ :/"
~ ~ .......
4
6
8 10.0
Ic ,COLLECTOR CURRENT (AMPERES)
10.000
8.0
Cii
~
0
~ 4.0
f---- ----TC=IOO°C
r - - - --Tc=2S·C
f---- /3, =Ic/ISI
...a.
~
~
~
Tc=2S0C
CEBO
UJ
CI
0:
UJ
15
FIGURE 4. VCE(satl vs Ic. Tc = 100°C
10.0
6.0
/3,'10
/3f=8
/3,.6
:;; . /
../
../
/d
UJ
U
Z
2.0
!::
1.5
UJ
~
1.0
c:t
ID
0.8
j
0.6
:::!:
~
I/)
0.4
---:..;
1.0
--- -- - 2
4
........ ~>
-
6
8
10
Ie,COLLECTOR CURRENT(AMPERES)
FIGURE 5. VSE (satl
VS
U
/3,=10
13•
u
~
.... '
-
~
~ 1000
/3f=2
--- --
~
100
15
I
2
r-.. ....
5
--
r-- r-
10
20
VR,REVERSE VOLTAGE (VOLTS)
FIGURE 6. CAPACITANCE
IC
825
:-
~
50
100
TYPICAL SWITCHING CHARACTERISTICS
1.0
.8
.6
L&I
::Ii
j:
z
3:
~
.2
_-
z
II!
~
"'Ir
v~
I p .50p.sEC
!. . . .08I ~ =::.......
SEE FIGURE 17 FOR
TEST CIRCUIT
.-:::; ~ ~
.06
.04
6
4
8
10
I---
.4
15
--r---=:t---
.2
I
I
-0
VCE(CLAMPEDI
90% Ic
1rl
II)
~
I
~I.
--
I
~
;,7
/
-
L...-
2
5.0
::l.
L&I
4
-
f--
6
I-
10
8
-
Tc"IOO'C
::Ii
j:
2.0 I--- - - TC"25'C CVce:2OOVI
If
~
1.0
1\
~
3:
'\
10% Ie
~
15
.....
-- -Is -
VCE(CLAMP)=250V (V CEX )
(lBI=rB2~Ic/5)
IBI=I c /6,II2=I C/5
I p o 50 p.sEC,VBE(OFF)·-6V(1 p
=26~ SEC)
IV BE COFF)::"6VS::
L"200p.h
SEE FIGURE 17 FOR
.2 ~
~EsT CIRCUIT
.05
oJ
.02
8
IB2
~
II:
II:
::I
U
II:
~
~
~
.5 ~
i
II)
L&I
-- - -- C'--
-----
l~~
FIGURE 8. TURN·OFF TIME RESISTIVE LOAD
I \
I
IBI
-'!-, 1--
10.0
I
I
I-
I
IC,COLLECTOR CURRENT (AMPERES)
COLLECTOR CURRENT
VCE
----......
1"-
TEST CIRCUIT
I
1.0
FIGURE 7. TURN·ON TIME RESISTIVE LOAD
I
t--- ,....
1==
IC,COLLECTOR CURRENT (AMPERES)
,:
,.....
IBI"'c/6"12"lc/5 CIBI :IB2 :le/5)
~
.8
'p'50p.sEC Itp =20p.sECI
.6 I - - SEE FIGURE 17 FOR
8
2
t-
1.0
oJ
oJ
.0 I1.0
---Tc'IOO"C
- - Tc 'z5"C
Vcc '250V (200V)
§
.02
I---
2.0
II:
II:
::I
U
II:
~
8
z
ffi
Id
-- -
-f--
Is
j:
+
\"T- -
I-
--
::>
u
II:
-- -
0;:::1-
,
-
--
LU
II:
II:
-- -
I-
16
15
30
"
~
0
IL
20
10
50 100 200 5001.0l<
o
w
~
~
00
~
~
~
"'- ,
~
~
Te - CASE TEMPERATURE (·C)
FIGURE 15. TRANSIENT THERMAL RESPONSE
"
~
FIGURE 16. POWER DERATING
VCC (AS SPECIFIED)
L
+IOV
----12ci'l-
O.:l;s L-MIN
NOTE:
(2) VALUE OF L (INDUCTOR) IS
SPECIFIED ON RATING CURVES.
WAVEFORMS
(RESISTIVE SWITCHING)
IN5626
ISI-r---.....,.X~90%
D.U.T.
+
VCE (CLAMP)
(AS SPECIFIED)
A !E~___
I
90"1.
IS2 __ I_____
___
'!
-':'
(3) SELECT RC (RESISTIVE SWITCHING)
IC-:C~90%
~IO%
FOR DESIRED IC'
(4) ADJUST VSI' VS2 AND RS2 FOR
TIME DESIRED lSI AND IS2 VALUES.
(5) CIRCUIT LAYOUT AND COMPONENT
SELECTION IS CRITICAL DUE TO
FAST SWITCHING TIMES TO BE
MEASURED.
Id=A-B
I, =A-C
I =X-Y
I:=V-Z
Z~
NOTE:
TRANSITION TIME FROM 90"1. lSI TO 90"1.
182 (X-W) MUST BE LESS THAN 100 .SEC.
FIGURE 17. TEST CIRCUIT FOR SWITCHING TIMES AND RBSOA
827
828
92GU01,01A
2N6714,15
NPN POWER TRANSISTORS
30-40 VOLTS
2 AMP, 1.2 WATTS
COMPLEMENTARY TO THE
2N6726, 27/92GU51, 51A SERIES
Applications:
NPN
~
• Class "8" audio outputs/drivers
• General purpose switching and lamp drive in industrial
and automotive circuits.
COLLECTOR
BASE~
EMITTER
COLLECTOR
EMITTER
CASE STYLE TO-237
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.105(2.67)
.095(2.41)
.050(1.27)
~. .La-~Tn.r---L
SEATING
PLANE
.250(6.35)
~
~or[
.016(.41)
.018(.46).L.016(.41)]
.016(.41)
.014(.36)
~__ O0O~or [022(.561
.016(.41)
maxhnum ratings (TA = 25 0 C)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
.016(.41)
& .020(.511 ]
.014(.36)
(unless otherwise specified)
VCEO
VCB
92GU01/2N6714
30
40
92GU01A/2N6715
40
50
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
VEB
IC
5
2.0
5
2.0
Volts
A
Total Power Dissipation @ T A = 25° C
Operating and Storage
Junction Temperature Range
PDP'
1.2
1.2
Watts
TJ, TSTG
-55 to +150
-55 to +150
°C
ROJA
ROJC
167
167
50
50
SYMBOL
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
'POP =Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board
with total copper run area equal to 1.0 in.2 minimum.
829
electrical characteristics (TA = 25° C)
(unless otherwise specified)
I SYMBOL I
MIN
TYP
MAX
UNIT
VCEO(sus)
30
40
-
Volts
Collector Cut-off Current (Vcs =40V, IE =0)92GU01,2N6714
(VCB =50V, IE =0) 92GU01A,2N6715
ICBO
-
-
0.1
/J.A
Emitter Cutoff Current
(VES =5V, IC =0)
lEBO
-
-
0.1
/J.A
55
60
50
-
-
-
-
CHARACTERISTIC
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = 10mA, Is =OA)
92GU01,2N6714
92GU01A,2N6715
on characteristics
DC Current Gain
(Ic = 10mA, VCE = 1.0V)
(Ic = 100mA, VCE = 1.0V)
(Ic = 1000mA, VCE = 1.0V)
hFE
-
Base-Emitter On Voltage
(Ic = 1.0A, VCE = 1V
VSE(on)
-
-
1.2
V
Collector-Emitter Saaturation Voltage
(Ic = 1.0A, IB = 100mA)
VCE(sat)
-
-
.5
Volts
CSO
-
-
30
pF
50
-
-
MHz
dynamic characteristics
Collector Capacitance
(VCS = 10V, IE =0, f = 1MHz)
Current-Gain Bandwidth Product
(IC =50mA, VCE = 10V, f =1MHz)
fT
830
NPN POWER TRANSISTORS
92GU05,06
2N6716,17
60-80 VOLTS
2 AMPS, 1.2 WATTS
COMPLEMENTARY TO THE
2N6728, 29/92GU55, 56 SERIES
Applications:
NPN
COLLECTOR
• High VCE ratings:
92GU05 = 60V min. VCEO
92GU06 = 80V min. VCEO
EMITTER
BASE
~~~~~:::::-
COLLECTOR
EMITTER
• Exceptional power-to-price ratio
CASE STYLE TO-237
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
-r---i---"';~
.105(2.67)
.095(2.41)
-r
.050(1.27)
-.-L
maximum ratings (TA
=25
0
C)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
(unless otherwise specified)
SYMBOL
VCEO
VCB
Emitter Base Voltage
92GUOS/2N6716
60
60
92GU06A12N6717
80
80
UNITS
Volts
Volts
Volts
VEB
4.0
4.0
IC
2.0
2.0
A
PDP'
1.2
1.2
Watts
TJ. TSTG
-55 to +150
-55 to +150
°C
Thermal Resistance, Junction to Ambient
R8JA
167
167
Thermal Resistance, Junction to Case
R8JC
50
50
Collector Current -
Continuous
Total Power DiSSipation @ TA
Operating and Storage
Junction Temperature Range
=25°C
thermal characteristics
'POP =Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board
with total copper run area equal to 1.0 in. 2 minimum.
831
electrical characteristics (TA = 25° C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
VCEO(sus)
60
80
-
Volts
ICBO
-
-
0.1
0.1
IlA
-
100
IlA
80
SO
20
-
-
-
-
-
. 1.2
V
-
-
-
.S
.3S
Volts
CSO
-
-
30
pF
fT
SO
-
-
MHz
off characteristics
Collector-Emitter Sustaining Voltage
(IC = 10mA, IB = OA)
Collector Cut-off Current
92G UOS,2N6716
92GU06,2N6717
(VCB = 40V, IE = OA)
(VCB = SOV, IE = OA)
Emitter Cutoff Current
(VEB = 4V, Ic = OA)
lEBO
on characteristics
DC Current Gain
(IC = SOmA, VCE = 1V)
(Ic = 2S0mA, VCE = 1V)
(Ic = SOOmA, VCE = 1V)
hFE
Base-Emitter On Voltage
(IC = 2S0mA, VCE = 1V)
VSE(on)
Base-Emitter Saturation Voltage
(Ic = 2S0mA, Is = 10mA)
(Ic = 2S0mA, IB = 2SmA)
VBE(Sat)
dynamic characteristics
Collector Capacitance
(VCB = 10V, IE = 0, f = 1MHz)
Current-Gain Bandwidth Product
(Ic = 200mA, VCE = SV, f = 100MHz)
832
92GU45,45A
2N6724,25
NPN POWER DARLINGTON
TRANSISTORS
40-50 VOLTS
2 AMPS, 1 WATTS
Features:
NPN
~
• Lamp driver
BASE~
• Digit driver
EMITTER
• Directly compatible with bipolar and MOS lie drive
COLLECTOR
COLLECTOR
EMITTER
CASE STYLE TO-237
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
..,.----r------i~
.105(2.67)
.095(2.41)
---r
.050(1.27)
----L
SEATING
PLANE
.250(6.35)
1-
~or[
.016(.41)
....1..-_ _
00D~or [
.016(.41)
maximum ratings (TA
.018(.46).& .016(.41)]
.016(.41)
.014(.36)
.022(.56) & .020(.51) ]
.016(.41)
.014(.36)
=25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
SYMBOL
VCEO
VCES
92GU45/2N6724
40
50
92GU45A12N6725
50
60
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
VEBO
Ic
12
2.0
12
2.0
Volts
A
Total Power Dissipation @TA = 25°C
Operating and Storage
Junction Temperature Range
PDp·
1.0
1.0
Watts
TJ, TSTG
-55 to +150
-55 to +150
°C
thermal characteristics
Thermal Resistance, Junction to Ambient
200
200
°CIW
ROJA
Thermal Resistance, Junction to Case
62.5
62.5
ROJC
• Pop = Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit
board with total copper run area equal to 1.0 in.2 minimum.
833
electrical characteristics (T c
I
=25° C) (unless otherwise specified)
CHARACTERiSTiC
I sYMBOl I
MIN
TYP
MAX
UNIT
BVCES
40
50
-
-
Volts
-
-
100
nA
lEBO
-
-
100
pA
hFE
25,000
-
-
-
-
1.5
1.0
V
VBE(sat)
-
2.0
Volts
VBE(on)
-
-
2.0
Volts
off characteristics
Collector-Emitter Breakdown Voltage
(Ic = 1.0mA, VBE'; DV)
92G U45,2N6724
92G U45A,2N6725
Collector Cutoff Current
(VCB = 30V, IE =OA)
(VCB = 40V, IE =OA)
92G U45,2N6724
92GU45A,2N6725
Emitter Cutoff Current
(VEB = 10V, Ic =0)
ICBO
on characteristics
DC Current Gain
(Ic = 1mA, VCE = 5V)
(Ic =500mA, VCE =5V)
(Ic = 1000mA, VCE =5V)
Collector-Emitter Saturation Voltage
(Ic = 1000mA, IB = 2m A)
(Ic = 200mA, IB = 2mA)
Base-Emitter Saturation Voltage
(Ic = 1000mA, VCE = 2mA)
15,000
4,000
VCE(sat)
Base-Emitter On Voltage
(IC = 1000mA, VCE =5V)
834
-
92GU51,51A
2N6726~27
PNP POWER TRANSISTORS
-30-(-40) VOLTS
2 AMPS, 1.2 WATTS
COMPLEMENTARY TO THE
2N6714, 15/92GU01, 01A SERIES
Applications:
PNP
~
• Class "B" audio outputs/drivers .
• General purpose switching and lamp drive in industrial
and automotive circuits.
BASE~
EMITTER
COLLECTOR
COLLECTOR
--EO
EMITTER
CASE STYLE TO-237
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
-...---i-----i~
.105(2.67)
.095(2.41)
-r
.050(1.27)
J-~J-.-~~~~
SEATING
PLANE
.250(6.35)
1--
~or [ .018(.461.&~]
.016(.41)
.016(.41)
"",,--__ 00O~o, [
.016(.41)
maximum ratings (TA = 25 0 C)
RATING
Collector-Emitter Voltage
Collector-Base Voltage
Total Power Dissipation @TA
Operating and Storage
Junction Temperature Range
(unless otherwise specified)
VCEO
Vcs
92GU51/2N6726
-30
-40
92GU51A/2N6727
-40
-50
UNITS
Volts
Volts
VES
Ic
-5
-2.0
-5
-2.0
Volts
A
PDP'
1.2
1.2
Watts
TJ, TSTG
-55 to +150
-55 to +150
°C
ReJA
ReJC
167
167
50
50
°CIW
°CIW
SYMBOL
Emitter Base Voltage
Collector Current - Continuous
=25°C
.014(.36)
.022(.56) & .020(.51) ]
.016(.41)
.014(.36)
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
'PDP= Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board
with total copper run area equal to 1.0 in. 2 minimum.
835
electrical characteristics (TA = 25 0 C)
(unless otherwise specified)
CHARACTERISTIC
I SYMBOL I
MIN
TYP
MAX
UNIT
VCEO(sus)
-30
-40
-
Volts
ICBO
-
-
-
-.1
-.1
IlA
lEBO
-
-
-.1
IlA
-55
-60
-50
--
-
-
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = -10mA, IB = OA)
Collector Cut-off Current
92GU51,2N6726
92GU51A,2N6727
(VCB = -40V, IE = OA)
(VCB = -50V, IE = OA)
Emitter Cutoff Current
(VEB = -5V, Ic = OA)
on characteristics
DC Current Gain
(Ic = -10mA, VCE = -1V)
(Ic = -100A, VCE = -1V)
(Ic = -100A, VCE = -1V)
hFE
Collector-Emitter Saturation Voltage
(Ic = -1A, IB = -100mA)
VCE{sat)
-
-
-.5
V
Base-Emitter On Voltage
(Ic = -1A, VCE = -1V)
VBE{on)
-
-
-1.2
Volts
CBO
-
-
30
pF
50
-
-
MHz
dynamic characteristics
Collector Capacitance
(VCB = -10V, IE = 0, f = 1MHz)
Current-Gain Bandwidth Product
(Ic = -50mA, VCE = -10V, f = 1MHz)
fT
836
92GU55,56
2N6728,29
PNP POWER TRANSISTORS
-60-(-80) VOLTS
2 AMPS, 1.2 WATTS
COMPLEMENTARY TO THE
2N6716, 17/92GU05, 06 SERIES
Applications:
PNP
• High VCE ratings:
92GU55 = 60V min. VCEO
92GU56 = 80V min. VCEO
COLLECTOR
~
BASE~
EMITTER
COLLECTOR
EMITTER
• Exceptional power-to-price ratio
CASE STYLE TO-237
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.105(2.67)
.095(2.41)
.050(1.27)
-'---:rr-'-..---'-rr-lT"Tr' - - L
SEATING
PLANE
.250(6.35)
~
~or[
.Q16(.41)
-,-__ 00O~or
.016(.41)
.018(.461.& .. 016(.41)]
.016(.41)
.014(.36)
[022(.56) & .020(.51) ]
.016(.41)
.014(.36)
.105(2.67)
.080(2.03)
t
maximum ratings (TA = 25° C)
(unless otherwise specified)
VCEO
VCB
92GU55/2N6728
-60
-60
92GU56/2N6729
-80
-80
UNITS
Volts
Volts
Emitter Base Voltage
Collector Current - Continuous
VEB
IC
-4.0
-2.0
-4.0
-2.0
Volts
A
Total Power Dissipation @ T A = 25° C
Operating and Storage
Junction Temperature Range
PDP'
1.2
1.2
Watts
TJ, TSTG
-55 to +150
-55 to +150
°C
ROJA
ROJC
167
50
167
50
°C/W
RATING
Collector-Emitter Voltage
Collector-Base Voltage
SYMBOL
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
°C/W
'PDP = Practical Power DisSipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board
with total copper run area equal to 1.0 in.2 minimum.
837
electrical characteristics (T A = 25° C)
(unless otherwise specified)
I SYMBOL I
CHARACTERISTIC
MIN
TYP
MAX
UNIT
-SO
-80
.-
-
Volts
off characteristics
Collector-Emitter Sustaining Voltage
(Ic = -1.0mA. Is = OA)
92GU55.2NS728 VCEO(sus)
92GU5S.2NS729
-
Collector Cut-off Current (Vcs = -40V. IE = 0)92GU55.2N6728
(Vcs = -50V. Ie =0) 92GU5S.2NS729
Icso
-
-
-.1
-.1
pA
-
Emitter Cutoff Current
(VES = -4V. Ic = 0)
IESO
-
-
-100
pA
-80
-50
-20
-
-
-
-
-
-
-1.2
V
-
-
-
-.5
-.35
Volts
CSO
-
-
30
pF
fT
50
-
-
MHz
on characteristics
DC Current Gain
(IC = -50mA, VCE = -1V)
(Ic = -250mA. VCE = -1V)
(Ic = -500mA. VCE = -1V)
hFE
Base-Emitter On Voltage
(Ic = -250mA. VCE = -1V)
VSE(on)
Base-Emitter Saturation Voltage
(Ic = -250mA. Is = -10mA)
(Ic = -250mA. Is = -25mA)
VSE(sat)
dynamic characteristics
Collector Capacitance
(VCS = -10V. IE = O. f = 1MHz)
Current-Gain Bandwidth Product
(Ic = -200mA. VCE = -5V, f = 100MHz)
838
MOUNTING & HANDLING
CONSIDERATIONS
839
MOUNTING AND HANDLING
CONSIDERATIONS
For Surface-Mounted Devices
Surface-mounted devices are packaged and assembled with different methods than conventional transistors, and
require special consideration during mounting and handling to insure optimum performance. This section describes
these considerations for two types of surface-mounted devices:
;{]/J seJJ
CASE STYLE D-PAK
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
CASE STYLE SOT-89
.098
(2.5 MAX.)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.24
(0.6 MAX.)
.181
(4.6 MAX.)
.043 ± .008
(1.1 ±0.2)
.037
(0.95 MAX.)
II
.024
-+j t+---j0.6 MAX.)
.016 - .002 +.003
10.4 -0.05) (+0.08)
.059 ± .004 _
(1.5±0.1)
....._
. . ._
....._.059 ± .004
11.5±0.1)
o
.024
(0.6 MAX.)
.063± .008
p.6±0.2)
r---~--'----r---r---~
FIGURE 1. OUTLINE DRAWING OF SOT-B9 PACKAGE
FIGURE 2. OUTLINE DRAWING OF D-PAK PACKAGE
Figure 1 shows the dimensions of the SOT-89
transistor package. The small size (2.5 x 4.5 x 1.5mm)
and flat package design allows the transistor to be
mounted directly to a ceramic substrate. Flat emitter,
base, a.nd collector leads are flush-mounted to the
connector runs of the substrate; while a flat collector
tab (soldered to the substrate) increases ability of the
device to dissipate power.
Figure 2 shows the dimensions of the D-Pak
transistor package. The epoxy portion of the device (5.5
x 6.5 x 2.3mm) is smaller than an equivalent TO-220packaged device. Collector power dissipation is
increased by directly soldering the collector tab to the
ceramic substrate.
840
HANDLING CONSIDERATIONS
General - Since the external epoxy portions of the surface-mounted devices are much smaller than on
conventional transistor packages, these devices are often more susceptible to high-temperature/high-humidity
conditions. Thus, these surface-mounted devices should be coated or encapsulated when used in hightemperature! high-humidity environment.
Flux removal - After surface-mounted devices have been soldered to the circuit board/substrate, excess flux must
be removed to prevent corrosion of the device and lead wires. Organic flux may be removed by rinsing; but inorganic
flux must be cleaned with an olefin cleaner such as Freon TE or Di-Freon Solvent S3-E.
Both SOT-89 and D-Pak transistors must be preheated prior to being mounted on circuit boards.
There are several methods of preheating, including use of an infrared heat panel, parabolic infrared lamp, or hot air
circulation. Preheat the devices at 100-150°C for two minutes, raising the temperature as gradually as possible, since
the device pellets may be damaged by an abrupt thermal shock.
Preheating -
SOLDERING CONSIDERATIONS
Both SOT-89 and D-Pak transistors are specified for 250°C solder temperature for 20 seconds duration. It is
important to use a solder with a melting temperature of 190°C or lower. In general, soldering conditions range from
220-240°C for 3-5 seconds.
When using molten solder in the metal mask method, avoid uneven printing and deformation. Recommended
uniform solder printing thickness is at least 200}Lm to ensure lead wire solderability.
When using a soldering iron to mount a device to the circuit board, care should be taken to avoid damage and! or
dislocation of the device. (For this reason, soldering irons are recommended only for experimental or repair work.)
For proper bonding, the soldering iron tip should be lmm or less in diameter, and 250°C for 3 seconds or less. Never
touch the epoxy package with the soldering iron.
Figures 3 and 4 show the relationship between soldering temperature and preheating time for various device
mounting procedures.
Preheating
Soldering
300
Gradual cooling
(in the atmosphere)
Preheating
Soldering
300
Gradual cooling
(in the atmosphere)
250
P 200
P
QI
QI
'":::s 150
...~
QI
t:l.
100
...'":::s~
50
E
~
QI
t:l.
E
~
0
2 min. or more
2 min. or more
20 sec.
or less
20 sec. or less
FIGURE 4. REFLOW SOLDER METHOD
FIGURE 3. SOLDER DIP METHOD
841
POWER DISSIPATION CONSIDERATIONS
Maximum power dissipation for surface-mount transistor packages is different for individual devices than for
those mounted to a circuit board or substrate. For example:
SOT-89 transistor - Since this transistor package is so small, the maximum power dissipation of a device in
free air is 500 mW. However, the same device mounted directly to a circuit board has a maximum power
dissipation of 1-2W because of additional thermal diffusion to the circuit board from the collector tab.
Figure 5 illustrates the maximum power dissipation for two GE SOT-89-packaged transistors mounted to a
ceramic substrate.
, ,I.
.1
40 x SO x O.Bmmt
Conditions:
I piece per board
Reflow soldering
method
\.
'-
20X30XO.B
"-
\
.... ~
ISXlSXO.B
i~
,
"~ ~
,
I\.
""'- t"o..
Single unit
of transistor
:::"'
I
1
" ~ ~ ~!
~~
r---.. ~~ ~
...............
.Q20
0
20
40
60
BO
~
""
100 120 140 160
Ambient temperature
FIGURE 5. Po (MAX) VS. T A CHARACTERISTICS OF D70F2T1 and 071 F2T1
TRANSISTORS MOUNTED ON CERAMIC SUBSTRATE
D-Pak transistor - Maximum power dissipation for the straight-lead version is 1W; however, when the leadformed version is mounted directly to a ceramic substrate, the power dissipation is increased to 2-3W. Figure 6
illustrates the maximum power dissipation for two GE D-Pak-packaged transistors mounted to a ceramic substrate.
I piece per board
T A = 25°C Mounted
on ceramic substrate
4
s::
0
:;:;
as
.tlJ9-
3
x 50XO.BlDIDt
5
I
I
:a,..'"
0
s:l.
~
0
~
~
I
2
.......
30X30XO.B
I
Q)
:0
as
l""'-
I
Q)
~
......
I
I I
I I
.......
.......
~
I"
r- r- to-
20
f"'.
....... ~
Single unit
of transistor
o
o
......
r-- .....
40
r-....
-r- I'--.. 1000...
......
I"
......
....... J--..
l"- t-
60
BO
100
Ambient temperature
r-....
r.......
r-
-
:--- to.. I......
120.
....... 1:'
r""!IIIo.
140
FIGURE 6. PO(MAX) VS. T A CHARACTERISTICS OF D72F5T1 and D73F5T1
TRANSISTORS MOUNTED ON CERAMIC SUBSTRATE
842
160
MAXIMUM POWER DISSIPATION (TRANSIENT CONDITIONS)
Certain circuit designs (such as motor drives and flash circuits) require devices to be rated for transient conditions
as well as for their overall power dissipation capability. The relationship between maximum power dissipation and
pulse width under transient conditions for both SOT-89 and D-Pak transistors is shown in Figures 7 and 8,
respectively.
Single non repetitive pulse
50~~--------~r ----------r--------~-r----------_.----------~
30t-t-~--""'_..:_----t_
10~r-------~~----~~~~---------_+--~r_----+_--------_4
511-------i--:~--~r_~~~~--~--~~~~~
311----~--~~~--~1'~~~~=!:j
0.5
.....----~
Pc(max) is a value within the area with restricted -1--=:::~~~*
thermal resistance
0.3'-:'10:-m-------:-l~00~m------:l:------1::-';0:------~:--------:l~000
Pulse width (sec)
FIGURE 7. Po VS. TA CHARACTERISTICS OF D70F2T1 and D71F2T1 UNDER TRANSIENT CONDITIONS
1---HH-l++H+--+-I-Hf-H-Hfl----l-l-H-t-lffl----l-t+1-tttH
Sinl'll' unit
or Single pulse
Ta
... X-4-t- .
f--+++t+I-ttl---'~-A'f'Itk:-++++tt+it- ':--+-Ht! i
25'(
--,-
I
!
Ceramic substrate
50X50xO.8t
3 _
f--
--t I"+--= t t ~ngle~~it
.30x30
I I, _ I ~ftransistorl
1 E Pc(max) is a value within an area with restricted
: thermal resistance
,il
I!
,
. III II
II illill
II 11111
10m
100m
I
I 1'111111
I I
III
I ilill
II 11111
i Illill
j 1IIIIi
11111111
Ii 1111
10
100
1000
Pulse width (SEC)
FIGURE 8. Po VS. T A CHARACTERISTICS OF D72F5T1 and D73F5T1 UNDER TRANSIENT CONDITIONS
NOTE: Power dissipation (PD) is a value inside the area of restricted thermal resistance; and both Figures 7 and 8
depict power dissipation under a single non-repetitive pulse.
843
MINIMUM MOUNTING PAD AREA
Figure 9 shows the lead mounting locations and minimum pad size for SOT-89 transistors. Since the maximum
power dissipation is affected substantially by the collector connecting area, a large pad area is recommended .
.079(2.0)
.035(0.9)
FIGURE 9. MINIMUM RECOMMENDED PAD SIZE FOR SOT-89 TRANSISTORS
Figure to shows the minimum pad area for a D-Pak transistor. Since the thermal radiation of D-Pak transistors is
dependent on the collector tab connection to the circuit board, an increased board area will also increase the device's
maximum power dissipation. Thus, the collector area should be as large as possible.
r
O
236(So O)-l
~
.236(6.0)
~~
4(2
r;l
[il'
0063(10s
-rt..
4
.090(2.3)
0
0)
.118(3.0)
~t
~-+--+---.063(1.6)
...
--.090(2.3)
FIGURE 10. MINIMUM RECOMMENDED PAD SIZE FOR D-PAK TRANSISTORS
844
MOUNTING AND ELECTRICAL
TERMINATION PROCEDURES
For D66 & D67 Power
Darlington Transistor Modules
\tf
EMITTER
STEEL
i;;;'R
STEEL
LO;KWASHER
STEEL
WASHER
MOUNTING
HOLE
MOUNTING
SLOT
BASE 1 BASE2
ALL 066 DEVICES
ALL 067 DEVICES
MOUNTING
MOUNTING
HARDWARE: Standard #10 or M5
HARDWARE:
7/16"-1/2" 00
(11" 13mm) 00
Screws - Standard #6 or M3
Washers - 00 = 5/16"-3/8" (8-9 mm)
TORQUE: 19-25 lb.-in. (2-3 NM)
TORQUE: 6-8 lb.-in. (0.7-0.9 NM)
ELECTRICAL TERMINATION
ELECTRICAL TERMINATION
COLLECTOR & EMITTER:
COLLECTOR & EMITTER:
Screw: M5 x 8mm
Lockwasher: 9.2-13mm 00
Torque: 25-28 lb.-in.
(2.8-3.2 NM)
FASTON - AMP #41450
(or equivalent)
BASE:
FASTON - AMP #61339-1
(or equivalent)
BASE:
Base 1: FASTON-AMP #640917-1
Base 2: FASTON-AMP #640903-1
(or equivalents)
HEAT SINK FLATNESS
Heat sink surfaces must be flat within ±1.5 mils/inch (0.015mm/cm) over the mounting area and
must have a surface finish of < 64 micro inches (1.62 microns).
THERMAL COMPOUND
To minimize the effects of flatness differential and/or voids between the base plate and the heat
sink, apply a very thin layer of GE #6644 or Dow Corning #4 thermal compound to the back of
the base plate and the heat sink. NOTE: excessive thermal compound will not squeeze out from
underneath the device during mountdown. After applying thermal compound to the device and
the heat sink, place the device on the heat sink and rotate slowly to distribute grease. Check both
surfaces for uniform coverage before applying torque to mounting screws.
WARNING
THESE MODULES SHOULD BE HANDLED WITH CARE. THE CERAMIC
PORTION (INTERNAL ISOLATION) OFTHIS PRODUCT MAY CONTAIN
BERYLLIUM OXIDE AS A MAJOR INGREDIENT.
DO NOT CRUSH, GRIND, OR ABRADE THESE PORTIONS OF THE PRODUCT.
THE DUST RESULTING FROM SUCH ACTION MAY BE HAZARDOUS IF
INHALED.
845
GE
POWER TRANSISTOR
OUTLINE DRAWINGS
846
POWER TRANSISTOR OUTLINE DRAWINGS
POWER MOS DRAWINGS
N-CHANNEL
N-CHANNEL
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
--I
.05711.451--1
I-- .182 14.62)
1-1
r·6151,5.62)y.,281:i.251
~
r~
~ + "\ IfII
.815
.215
(5.4S1
-
120)0)
j,~
TERM.l
--L
.[!
N-1lIIJ
TERM.2
1 [-
TERM.3
.U33I~.841
.02710.691
\.
.1~.'0512.671
.09512.411
.gS5 P.391
_I
. 4511.141----'
\4-.
1-0-
2
.21015.331
.19014.821
.065 11.65)""\
.04811.221
N-CHANNEL
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
0.845(21.47)
MAX. :!~'35819'09) MAX
0~~X65l~
T
0.043(1.09)
0.03810.97)
--u--n=
DIA .......!
I
L
SEATING PLANE
.426(10.82) MIN.
r
CASE TEMP.
REFERENCE
POINT
.2015.00)
SOURCE
0.16214.09)
0.1513.84)
2 HOLES
3
~I ~~I~ ~.'00
.10712.721
.08712.211
0.440(11.18)
0.420(10.67)
847
:219
15.561
(2.541
Power MOS Drawings (Cont.)
N-CHANNEL
N-CHANNEL
CASE STYLE TO-204AE (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
CASE STYLE TO-20SAP (TO-39)
r:
0.845(21.47)
M A X . H ·358 (9.09) MAX
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.890-9.398)
OO.%"'~~---t ,~,,~~,
0.063(1.60)
0.057(1.45)
DIA.-.l1-
0.315-0.335
(8.001-8.509)
f
0.240-0.260
.426(10.82) MIN.
~~
I
0.019-0.033
(0.483-0.838)
,SEATING
PLANE
i.
T----
DRAIN
>--fI---GATE
0.500
(12.70)
MIN
CASE TEMP.
REFERENCE
POINT
.20(5.00)
0.162(4.09)
0.15(3.84)
2 HOLES
0.440(11.18)
0.420(10.67)
N-CHANNEL
CASE STYLE TO-20SAF (TO-39)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.350-0.370
(8.89G-9.398)
0.315-0.335
(8.001-8.509)
~
(0.483-0.838)
L=~ •.e;rr=:n==n::~ ~
SEATING
_ l-PLANE
-I
0.009-0.018
(0.229-0.457)
0.500
(12.70)
1
2
n n" ft
u- U .1U\..-
0.016-0.019
(0.406-0.483)
MIN
DRAIN
GATE
SOURCE
0.190-0.210
(4.826-5.334)
0.029-0.045
(0.737-1.143)
0.028-0.034
(0.711-0.864)
848
Power MOS Drawings (ConI.)
N-CHANNEL
N-CHANNEL
,~;~
CASE STYLE TO-237
DIMENSIDNS ARE IN INCHES ANb (MILLIMETERS)
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
-r---i----;----L
0.360-0.410
(9.144-10.414)
.105(2.67)
.095(2.41)
.125 REF.
-r
~
.050(1.27)
--'-~-'-...- L-rr-n-rr----.L
0.480-0.520
(12.192-13.208)
l
0.065-0.075
0.285-0.315
(7.237-8.001)
~
X 45'
CHAMFER~
1.21 REF.
~
1
0.405-0.425
(10.287-10.795)
2
0.095-0.105
(2.413-2.667)
0.026
(0.660)
+l~I--O'095-O
105
(2.413-2667)
)
~
~
~
----,
[
D~or [
SEATING
PLANE
~or
.016(.41)
.016(.41)
0.170-0.190
(4.318-4.826)
0019-0026
.
.
(0.483-0.660)
0.095-0.106
(2.413-2.667)
N-CHANNEL
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
DRAIN
O
SOURCE
GATE
~O.245 ~
(6.22)
A
.
II
0.15
(3.81)
~
0.300
0.198
~
r~~)-l
~-.-
(3.04)
0.120
-,
0.15
(3.81)
I---±
(0'5~6)
L
0.040(1.02)
(3.30)
I
0.022
~~ (7.62)',
0.100
(2.54)1
849
.018(.46) & .016(.41)]
.016(.41)
.014(.38)
.0221.56) & .020(.51) ]
.016(.41)
.014(.36)
IGT DRAWINGS
CASE STYLE TO-204AA (TO-3)
CASE STYLE TO-204AE (TO-3)
DIMENSIDNS ARE IN INCHES AND (MILLIMETERS)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
r:
-:~~~t~4 -,,~ .,,'
r:
06~~X65l~
0.845(21.47)
MAX. H·35819.09) MAX
0.845121.47)
MAX ~~'358(9'09) MAX
T
0.043(1.09)
0.038(097)
--u--rr=
DIA
~
I-
SEATING PLANE
0.063(1.60) OIA . ...J
0.057(1.45)
.....,
426(1082) MIN
----..,
I- .
.426110.821 MIN.
CASE TEMP.
CASE TEMP.
REFERENCE
POINT
.2015.00)
REFERENCE
POINT
.20(5.00)
0.16214.09)
0.1513.84)
2 HOLES
0.162(4.09)
0.1513.B4)
2 HOLES
0.440(11.181
O.440{11.18)
0.420(10.67)
0.420(10.67)
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.404(10.261 . ~ ~~\~.~~\
.38019.65)..j· I '
1--1...
.
t
CASE STYLE TO-247
.190(4.831
170(4'32)~
-.----.
1
.265(6.73)
.245(6.221
•
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.055(139)
.048(1.22)
--l
.057 (1.45)-1
CASE
/f---~--~----------l---~-J, ~
TEMPERATURE
REFERENCE
+
68
'.',4
4 5, «33.· S8))OIA.
rt
.355(9.02)
.325(8.25)
.130(3.3)
OINT
.ggfl~.~;~)
TERM.3
.027(0.69)
r .615 (15.62)y.,2B (3.25)
'-r
-~Il
.215
(5.46)
'c~
W1l-1l(LJ
::::::~~~;::,i:" ".,
.500(12.7)MIN.
TERM.2
.033(~.84)
r
:t.L
~59)
f
TERM.l
\--.182 (4.62)
1-/
2
.1~.'05(2.67)
.055(1.39)--1
.045(1.14)
.10712.72)
.08712.21)
~ •. 095(2.411
1:=
.210(5.33)
.190(4.82)
.021(0.53)
.015(0.38)
850
3
BIPOLAR DRAWINGS
CASE STYLE TO-220AB *
CASE STYLE TO-202 *
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
/
0.480-0.520
(12.192-13.2081
:~:~!~:~:!DIA.
.006(0.151
.001(0.0251
0.285-0.315
(7.237-8.0011
1.21 REF.
(30.734)
TERM.l
TERM.2
0.405-0.425
(10.287-10.7951
TERM.3
.033(~.84)
.1~.'05(2.671
_I 1--'
.045(1.141~ I--
.055(1.39'1
r H
O~:;"t~4 '~HOO"'"
DIA.---.I!-
0.845(21.47)
L.. MAX ...J~'358(9'09) MAX
I':' DIA . .:l
MAX.l~
.358(9.091 MAX
.065(1.651
T
--u--n=
0.063(1.60) DIA.---.l10.057(1.451
I
.426(10.821 MIN
I
CASE TEMP.
REFERENCE
POINT
.20(5.001
CASE TEMP.
REFERENCE
POINT
.20(5.001
0.162(4.091
0.162(4.091
0.15(3.841
2 HOLES
.021(0.531
.015(0.381
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.043(1.091
0.038(0.97)
.21015.331
.190(4.821
CASE STYLE TO-204AE (TO-3)
CASE STYLE TO-204AA (TO-3)
0845(21.471
MAX.
.107(2.72 1
.087(2.21)
~ •.. 095(2.411
.027(0.69)
0.15(3.841
2 HOLES
0.440(11.181
0.440(11.181
0.420(10.671
0.420(10.671
'Indicates additional lead-formed options available.
851
SEATING PLANE
.426(10.82) MIN.
Bipolar Drawings (Cont.)
CASE STYLE TO-218 *
DIMENSIONS ARE IN INCHES ANO (MILLIMETERS)
CASE STYLE TO-247
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
1--.
615 (15.62)y.128 (3.25)
-r+/ r. -r
I )1~lL (±J"\.~
.156(3.96)
MIN.
.815
(20.70)
.461(11.709)
....L
.147(3.734)I.;='For='F'F'i'"
MAX.
,-1
.046(1.219)
NOM.
t1
3
2
1~~...J
.205(5.207)
l-Il-
l,~! J
If
(LJ
.622(15.798)
2
(5.46)
--L.
.018(.457)
NOM.
-(
!t-.ll0 (2.79)
.018 (0.46)1,
.095(2.413)
.450(11.4301
.410(10.414)
MIN•
CASE STYLE TO-247S
3
::::~~~,:J-"'M'
CASE STYLE TO-220IS
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.408(10.3) MAX.
,
.531 ± .020
(13.5£0.5)
.215 ± .008
(5.45 ± 0.2).,
030(2 54) + .010(0.25)
.
.
•.006(0.15)
~
.100(2.54) ± .010(0.25)_H-+O>-.loo(2.54) ± .010(0.25)
;:
~ ~.
•
-
"''''-'
~
f f
"Indicates additional lead-formed options available.
852
~-')«'
~.
:Ii
Bipolar Drawings (Cont.)
tr~tr ~~
~
!L1-+1 •J1,1).::1 ~
BASE~
EMITTER
COLLECTOR
CASE STYLE TO-237
1
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
E
@
I
,T,
I
~
T~P"*1:
-.-----i----i~
.105(2.67)
R·
1
" X,
.050(1.27)
~~~_,~~---L
.I.
H
[
--'---_00 D~or [
.01B(.461.& •.016(.41)]
.016(.41)
.014(.36)
.016(.41)
INCHES
v
A
F
1.50S 1.540 30.22 39.12
.'20 .'32 3.04 3.35
G
.605
.645
15.36
1040
H
.940
.900
23.87 24.19
f
+
J
.307
K,
.120
K
.171
l
.'92
.... ....
M
S
v
DIMENSIONS ARE IN INCHES AND
(MILLIMETERS)
INCHES
1.785 1.815 45.33 46,10
.6'5 .1i85 15.62 17.40
D
E
F
G
11.48 11.98 29.15
1.215 1.270 30.86
1.470
.245
.20
.335
'.50
1.190 29.71
.325 7.50
30.43
32.36
REF. 13.16
.290 '.60
REF. 3.81
REF. '.60
REF. '.30
320 7.60
AEF.
7.37
REF.
REF.
REF.
013
.390
•.90
.03'
.510
12.57 '~95
.'50
.170
3.81
U
·... 11.015 25.01 25.80
V
.450
4.32
REF . 11.43 REF.
7.00
-
W
.'00
-
4.57
-
3.Q4
3.35
X,
.050
.050
1.27
1.47
4.34
4.64
X
.065
.073
~S7
4.00
V
.157
.Tn
11.78 12.30
Z
1.180 1.192
'.os ,.os
a.. 4.50
N
.,.7
.255
6.27
'.40
AA
.'30 .'00
29.97 30.30
3.30 4.30
P
2'0
.230
5.33
5.M
AB
.604
17.37 17.90
a
.275
REF.
7.00
REF.
AC
.03'
.035
.70
.90
R
.970
REF. 24.64
REF.
AD
. '00
REF .
2.54
REF.
.704
9.40
CASE STYLE SIP-8 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
Ir =11
37.34
.795 ± .OOB
(20.2 ± 0.2)
.531 - - I
(13.5)
~ I
30.23
'.26
.312 REF. 7.90 REF.
M5 (MED FlnMS IMEO Fin
.'M ,192 4.67 4.90
.119
.050
.065
.204
.365
.235
.495
T
METRIC
MIN
A
B
.104
S
V
MM
MIN MAX
M
C
MAX
.'32
.,M
METRIC
MM
MIN IMAX
M
.OBO(2.03)
.125(3.1B)
INCHES
MIN I MAX
S
.105(2.67)
.105(2.67)
.080(2.03) .165(4.23)
MAX
:
METflIC
MIN
CASE STYLE 067
~2
MM
MIN MAX
M
-,
ORIENTATION OF THE
FLAT IS NOT CONTROLLED
a
X2
S
.022(.56) & .020(.51) ]
.016(.41)
.014(.36)
.016(.41)
t
CASE STYLE 066
DIMENSIONS ARE IN INCHES
AND (MILLIMETERS)
41.'1,~
--r
~or
l
AA1 !-AB-=1!r- AC
1 ~-rttll HT~ n ~-L
1r--III
.095(2.41)
SEATING
PLANE
~....
,OS9A
(01.5)
...
.034
.132
.70
3.02
3.35
.060
1.27
1.52
5.36
....
.075
.211
.,
.305
9.27
.265
.125
5."
1.65
'.90
6.73
3.20
853
I'"
Bipolar Drawings (Cont.)
CASE STYLE SIP-12 PIN
DIMENSIONS ARE IN INCHj:S AND (MILLIMETERS)
CASE STYLE SIP-10 PIN
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.039R
(Oi)
.126Dia
(03.2)
.100
(2.54)
:I!)J etJ)
CASE STYLE D-PAK
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.
CASE STYLE SOT.,.89
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
.037
(0.95 MAX.)
~Ii
.098
(2.5 MAX.)
.24
(0.6 MAlt)
.043± .008
(1.1 ±0.2)
.024
(0.6 MAX.)
~ 1~~
JJ (0.6~!x.J
.D63±.008
'r-=~'"T""=""":'--r--::=-:-"'T'"=:-:-:"""T_=,.-'-(1,.6±0.2)
854
PACKAGE ALTERNATIVES
TO-202
H
OTHERWISE
SAME
=k
o
NOTE: NOT
BASIC FORM.
FOR REF. USE.
K
OTHERWISE
SAME
ASE
F
Me
OTHERWISE
SAMEASE
OTHERWISE
SAME
ASJ
.465
REF.
I--.L
c
J/
TERM.
REMOVED
• = CRITICAL DIM.
MAKE FROM
TYPE A
E
MAKE FROM
TYPEB
B
OTHERWISE SAME
AS TYPEC OR 0
• = ENDS OF BOTTOM
LEADS TO BE PARALLEL
WITHIN .020 TOTAL
ON A GIVEN PART.
OTHERWISE SAME
ASG
~&K
G&H
E&F
C&D
• = ENDS OF BOTTOM
LEADS TO BE PARALLEL
WITHIN .020 TOTAL
ON A GIVEN PART.
OTHERWISE SAME
AS TYPE C
• = ENDS OF BOTTOM
LEADS TO BE
PARALLEL WITHIN
.020 TOTAL ON A
GIVEN PART.
.485
-1. 250 I+-
REF.
IREF·I-..l
±.OO5
.020R
TYP.
MAKE FROM
TYPE A
w\
-..L
~
r
±.030
.3~
CENT'R~ ~5
LEAD
MAKE FROM TYPE A
L
.020R
OTHERWISE SAME
ASTYPEN
MAKE FROM
TYPE A
MAKE FROM
TYPE A
u
p
N
.080
(INSIDE)
w
T
TO-218
• = ENDS OF BOTTOM
LEADS TO BE
PARALLEL WITHIN
.020 TOTAL ON A
GIVEN PART.
FIG. A
FIG.C '
FIG.S
,gL~_
rSEATING
I _ PLANE
ttl
1~.~
~
.020R
'OO5tI
11.270)
i
I'
'f TER~.l
TERM. 3
MAKE FROM
TYPE A
x
-, .145)
7.925~ c:i iii
V ..
I
(111.
r.'3121~~~
n_
I
0.048(1.219)
NOM.
LC~~ . ~-~75 j '\::~
0.420-0.44"
(10.888-11.176)
1-
0.05
±.010
.125
CENT'R
LEAD
TERM. I
TeRM. 2
'I~
H
3~
00
:::::.
NOTES:
1. POSITION OF LEAD TO BE MEASURED 4.699-4.828.
2. POSITION OF LEAD TO BE MEASURED 1.27G-l.397 BELOW
.
SEATING PLANE.
3. TAB OUTLINE OPTIONAL WITH BOUNDARIES OF
OVERALL TAB WIDTH AND TAB MOUNTING HOLE
DIAMETER.
y
855
Package Alternatives (Cont.)
TO-220
.172 - .202
(4.36 - 5.13)
1
.570
.120 - .130
.~~~4l:==::=3--7Lt(3:::::.04
-3.30)
.:.,020
- .030
(.50 - .76)
~~
t
.040 - .060
(1.01 - 1.52)
o 0
c
B
o
.231 REF.
(5.86 REF)
oj"
mooi
9.67 REF.), 0,. ';"
....
.... .r
LQt
.025 - .035
(.63 - .89)
TERM. 2
.120- .130
(3.04 -3.30)
.120 - .130
(3.04 -3.30)
E
G
F
.025 - .035
(.63 - .89)
TERM~ 2
TERM. 1
&3
.025- .035
(.63- .89)
TERM. 1
&3
TERM. 1
&3
.190 - .210
(4.82 - 5.33)
.140 - .160
(3.55 - 4.06)
H
J
856
K
SALES REPRESENTATIVES
DOMESTIC
ALABAMA
CSR Electronics, Huntsville
(205) 533-2444
ARIZONA
Shefler-Kahn, Phoenix
(602) 257-9015
CALIFORNIA
Addem, San Diego
(619) 729-9216
Ewing-Foley, Inc.
Los Altos
(415) 941-4525
Ewing-Foley, Inc.
Roseville
(916) 969-2672
H-Technical Sales II, Inc., Canoga Park
(818) 999-1222
H-Technical Sales 1I,lnc. Orange County
(714) 740-7161
INDIANA
Giesting & Assoc., Fort Wayne
(219) 486-1912
Giesting & Assoc., Indianapolis
(317) 844-5222
IOWA
NORTH CAROLINA
CSR Electronics, Raleigh
(919) 878-9200
OHIO
Giesting & Assoc., Cincinnati
(513) 385-1105
J.R. Sales, Cedar Rapids
(319) 393-2232
Giesting & Assoc., Cleveland
(216) 261-9705
KANSAS
Giesting & Assoc., Dayton
(513) 433-5832
KEBCO, Kansas City
(913) 541-8341
OKLAHOMA
KEBCO, Wichita
(316) 733-1301-
Bonser-Philhower Sales, Tulsa
(918) 744-9964
MARYLAND
OREGON
Robert Electronic Sales, Columbia
(301) 995-1900
LD Electronics, Beaverton
(503) 649-8556 + (503) 649-6177
MASSACHUSETTS
PENNSYLVANIA (East)
Advanced Tech. Sales, Burlington
(617) 272-0100
COMTEK, Mt. Laurel (N.J.)
(609) 235-8505
MICHIGAN
Giesting & Assoc., Farmington Hills
PENNSYLVANIA (West)
COLORADO
Thorson Rocky Mountain, Englewood
(303) 779-0666
(313) 478-8106
CONNECTICUT
Advanced Component Sales, Meriden
(203) 238-6891
DISTRICT OF COLUMBIA
Robert Electronic Sales
(301) 982-1177
FLORIDA
Giesting & Assoc., Coloma
(616) 468-4200
MINNESOTA
PSI, Minneapolis
(612) 944-8545
MISSOURI
Giesting & Assoc., Pittsburgh
(412) 963-0727
TENNESSEE
CSR Electronics, Knoxville
(615) 673-0222
TEXAS
Bonser-Philhower Sales, Richardson
(214) 234-8438
EIR, Maitland
1057 Maitland Center Commons
(305) 660-9600
KEBCO, St. Louis
(314) 576-4111
Bonser-Philhower Sales, Austin
(512) 346-9186
NEW JERSEY (North)
GEORGIA
S-J Assoc., Jamaica (N.Y.)
(718) 291-3232
Bonser-Philhower Sales, Houston
(713) 531-4144
CSR Electronics, Atlanta
(404) 396-3720
UTAH
LD Electronics, Spokane (WA)
(509) 922-4883
COMTEK, Mt. Laurel
(609) 235-8505
Thorson Rocky Mountain,
West Valley City
(801) 973-7969
NEW MEXICO
WASHINGTON
IDAHO (South)
Thorson Rocky Mountain, (UT)
(801) 973-7969
Shefler-Kahn, Albuquerque
(505) 345-3591
LD Electronics, Snohomish
(206) 568-0511
NEW YORK
ILLINOIS
Ossmann Component Sales, Rochester
(716) 424-4460
LD Electronics, Spokane
(509) 922-4883
IDAHO (North)
D. Dolin Sales, Chicago
(312) 498-6770
NEW JERSEY (South)
Ossmann Component Sales, Syracuse
(315) 437-7052
Ossmann Component Sales, Vestal
(607) 754-3264
S-J Assoc., Jamaica
(718) 291-3232
857
WISCONSIN
D. Dolin Sales, Milwaukee
(414) 482-1111
SALES REPRESENTATIVES
INTERNATIONAL
ARGENTINA
HONG KONG
S'PORE/MALAYSIA
Gerieral Electric Argentina S.A.
Santo Domingo 3220
Buenos Aires, Argentina
Tel: (541) 281472
GE Semiconductor HK, Ltd.
Room 1603
Perfect Commercial Bldg.
20 Austin Ave., Tsimshatsui
Kowloon, Hong Kong
Tel: 3-7214286
NIE Electronics (S) PTE Ltd.
605B Macpherson Road NBR 04-11
Citimac Industrial Complex
S'pore 1336
Tel: 2850111
TLX: RS21633 Niesin
FAX: 2879207
AUSTRALIA
GEC Automation N Control
2 Giffnock Ave.
North Ryde, N.SW. 2113
Australia
Tel: NBR (02) 887 6111
TLX: AA 26080
BELGIUM
General Electric Company (USA)
Chaussee de la Hulpe 150
B-1170 Brussels
Tel: 660-20-10
BRAZIL
Applicacoes Electronicas .A.
Artimar Ltd.
Caixa Postal 5881
Sao Paulo
Tel: 231-0277
CANADA
Gidden-Morton Assoc., Inc.
7548 Bath Road
Mississauga, Ontario L4T 1L2
Tel: (416) 671-8111
Access Electronics
Ste.101
3570 E. Hastings St.
Vancouver, BC
Canada V5K 2A7
Tel: (604) 299-3556
CHILE
Electromat S.A. Fabrica
De Materiales Electricos
Casilla 2103
Santiago, Chile
Tel: (562) 53031
FRANCE
General Electric Semiconductor
337 Bureaux de la Colline
92213 Saint Cloud
Cedex, France
Tel: 602-5898
GERMANY
General Electric Company
Postfach 2963
Praunheimer Landstrasse 50
6000 FrankfurVMain, Germany
Tel: 760-7333
GE Semiconductor GMBH
Bavariaring 8
Concordiahaus
D-8000 Munich 2
West Germany
Tel: 089-51490-0
TLX: 521-8295 gesm d
FAX: 089-51490-40
INDIA
IGE (India) Ltd.
Nirmal, 17th Floor
Nariman Point, Bombay 400 021
Tel: 233075
IGE (India) Ltd.
Archana Office Complex
Greater Kailashil
New Delhi 11048
Tel: 645230
ITALY
GE Semiconductor
Via del Missaglia 113/A1
20142 Milano Italy
Tel: 2/8229709
JAPAN
General Electric (USA) Semi K.K.
Meiji Seimei
Gotanda Bldg.
3rd FI.
2-27-4 Nishi Gotanda
Shinagawa-Ku, Toyko 141
Tel: 03-779-0401
KOREA
General Electric (USA) Korea Co.
10th Floor, Hanmi Bldg.
1 Kongpyung-Dong,
Chongro-Ku
Seoul, Korea 110
Tel: 725-8651/6
MEXICO
Proveedora Electronica S.A.
Apdo. Postal 21-139
Mexico 21, D.F.
Tel: 5-54-8300
NEW ZEALAND
Delphi Industries Limited
27 Ben Lomond Crescent
Pakuranga, Auckland
New Zealand
Tel: 563-259
TLX: NZ21992
SINGAPORE
PTE Ltd.
105 Boon Keng Rd. #03-01
Singapore, 1233
Tel: 298-3522
FAX: 2960677
TLX: RS35582 ECOGE
858
SOUTH AFRICA
South African
General Electric Co. (PTY), Ltd.
1 Van Dyk Road
Benoni, South Africa
Tel: 52-8111/52-3692
SPAIN
GETSCO Division Internacional
Juan Bravo No. 3C
Madrid 6
Tel: 276-7062
SWEDEN
International General Electric, AB
(Kistagangen 19)
Box 1203
163 13 Spanga
Stockholm, Sweden
Tel: 46-8-793-9612/9500
TAIWAN
President Enterprises Corp.
11 FL, 560 Chung Hsiao E. Road, Sec. 4
Taipei, Taiwan 105, R.O.C.
Tel: (02) 700 2866
TLX: 12200 Precortpe
Leadtorn Industrial Inc.
B1, 6FL, No. 126
Nanking E Road, Sec. 4
Taipei, Taiwan 105, R.O.C.
Tel: 2-7732200-3
TLX: 21795
THAILAND
Grawinner Company Limited
226/27 Phahonyothin Road
Phyathai, Bangkok 10400
Thailand
Tel: 278-3411
TLX: 87155 GWN TH
UNITED KINGDOM
General Electric-Intersil
Belgrave House
Basing View
Basingstoke, Hampshire RG21 2YS
Tel: 256-57361
VENEZUELA
General Electric De Venezuela S.A.
Sabana Grande
Caracas