1985_NEC_Optoelectronic_Products_Data_Book 1985 NEC Optoelectronic Products Data Book
User Manual: 1985_NEC_Optoelectronic_Products_Data_Book
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NEC-
NEe Electronics Inc.
1
9
DATA
8
5
BOO K
NEe
NEe Electronics Inc.
1985
OPTOELECTRONICS
DATA BOOK
March 1985
Stock No. 400100
©1985 NEe Electronics Inc.lPrinted in U.S.A.
The information in this document is subject to change without notice. NEC Electronics Inc. makes no warranty of
any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and
fitness for a particular purpose. NEC Electronics Inc. assumes no responsibility for any errors that may appear in
this document. NEC Electronics Inc. makes no commitment to update nor to keep current the information
contained in this document. No part of this document may be copied or reproduced in any form or by any means
without the prior written consent of NEC Electronics Inc.
NEe
ii
t-lEC
GENERAL INFORMATION
QUALITY AND RELIABILITY
STANDARD LEDs
FASHION LEDs
PHOTO COUPLERS
D
II
II
II
II
,
PHOTO INTERRUPTERS
PHOTO TRANSISTORS AND PHOTO DIODES
iii
~
II
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TABLE OF CONTENTS
Page
Section 1 - General Information
Introduction ........................................................................................ 1-3
Ordering Information ................................................................................ 1-4
Red LED Selection Guide ........................................................................... 1-5
Green LED Selection Guide ......................................................................... 1-5
Amber/Yellow LED Selection Guide ................................................................... 1-5
Infrared LED Selection Guide ........................................................................ 1-5
Photo Coupler Selection Guide ....................................................................... 1-6
SCR Type Photo Coupler Selection Guide ............................................................. 1-6
Photo Interrupter Selection Guide .................................................................... 1-6
Photo Transistor Selection Guide ..................................................................... 1-6
Photo Diode Selection Guide ........................................................................ 1-6
Cross Reference Guide ............................................................................. 1-7
Handling Precautions .............................................................................. 1-12
Section 2 - Quality and Reliability
Quality and Reliability ............................................................................... 2-1
Section 3 - Standard LEDs
SE301AGaAs Infrared Emitting Diode ................................................................ 3-3
SE302A GaAs Infrared Emitting Diode ................................................................ 3-5
SE303A GaAs Infrared Emitting Diode ................................................................ 3-7
SE306 GaAs Infrared Emitting Diode ................................................................. 3-9
SE307 GaAs Infrared Emitting Diode ................................................................ 3-11
SE308 GaAs Infrared Emitting Diode ................................................................ 3-13
SE1003 GaAlAs on GaAs Infrared Emitting Diode ..................................................... 3-15
SG2030A, SG203TA (Green) GaP High Intensity LEOs ................................................ 3-17
SG2050, SG205T (Green) GaP LEOs ................................................................ 3-19
SG2060, SG206T, SY4060, SY406T, SR506C, SR5060
(Green, Amber, Red) GaP LEOs .................................................................. 3-21
SG2130, SG213T (Green) GaP High Intensity LEOs ................................................... 3-23
SG2150, SG215T (Green) GaP High Intensity LEOs ................................................... 3-25
SR106C, SR1060 (Red) GaAsP LEOs ............................................................... 3-27
SR503C, SR5030, SR503W (Red) GaP High Intensity LEOs ........................................... 3-29
SR505C, SR5050, SR505W (Red) GaP High Intensity LEOs ........................................... 3-31
SR513C, SR5130, SR513W (Red) GaP High Intensity LEOs ........................................... 3-33
SR603C, SR6030, SR603W (Red) GaAsP(N) High Intensity LEOs ...................................... 3-35
SR605C, SR6050, SR605W (Red) GaAsP(N) High Intensity LEOs ...................................... 3-37
SR613C, SR6130, SR613W (Red) GaAsP(N) High Intensity LEOs ...................................... 3-39
SR615C, SR6150, SR615W (Red) GaAsP(N) High Intensity LEOs ...................................... 3-41
SY4030A, SY403TA (Amber) GaAsP(N) High Intensity LEOs ........................................... 3-43
SY4050, SY405T (Amber) GaAsP(N) High Intensity LEOs ............................................. 3-45
SY4060, SY406T (Amber) GaAs LEOs .............................................................. 3-47
SY4130, SY413T (Amber) GaAsP High Intensity LEOs ................................................ 3-49
SY4150, SY415T (Amber) GaAsP High Intensity LEOs ................................................ 3-51
Section 4 - Fashion LEDs
SG231D (Green) GaP Fashion LED .................................................................. 4-3
SG2320 (Green) GaP Fashion LED .................................................................. 4-5
SG2330, SY4330, SR5330 (Green, Amber, Red) Fashion LEOs ........................................ 4-7
SG2350, SY4350, SR5350 (Green, Amber, Red) Fashion LEOs ........................................ 4-9
SG2360, SY4360, SR5360 (Green, Amber, Red) Fashion LEOs ....................................... 4-11
SG237D, SY4370, SR5370 (Green, Amber, Red) Fashion LEOs ....................................... 4-13
SG2380 (Green) Fashion LED ...................................................................... 4-15
SG2390, SY4390, SR5390 (Green, Amber, Red) Fashion LEOs ....................................... 4-17
iv
t-{EC
TABLE OF CONTENTS (coni)
Page
Section 4 - Fashion LEDs (cont)
SG240D, SY440D, SR540D (Green, Amber, Red) Fashion LEDs ....................................... 4-19
SG261D, SY461D, SR661D (Green, Amber, Red) Fashion LEDs ........................................ 4-21
SR531D (Red) Fashion LED ........................................................................ 4-23
SR538D (Red) Fashion LED ........................................................................ 4-25
SR632D (Red) GaAsP(N) Fashion LED .....................................•.....•.................. 4-27
SY431D (Amber) GaAsP Fashion LED ............................................................... 4-29
SY432D (Amber) Fashion LED ...................................................................... 4-31
SY438D (Amber) Fashion LED ..................................................................... 4-33
Section 5 - Photo Couplers
4N25 Photo Coupler, Single Transistor ................................................................ 5-3
6N136 High Speed Photo Coupler .... , ............................................................... 5-7
6N137 High Speed Photo Coupler ....................•.............................................. 5-11
MCT2 Photo Coupler Single Transistor .............................................................. 5-15
PS20028 Photo Coupler Darlington Transistor ....................................................... 5-19
PS20048 Photo Coupler Darlington Transistor ....................................................... 5-23
PS20058 Photo Coupler High Impact Current Single Transistor ........................................ 5-27
PS20068 PS2006B(1) High Speed Photo Couplers ................................................... 5-31
PS20078 High Speed Photo Coupler ................................................................ 5-35
PS2010 Photo Coupler Single Transistor ............................................................ 5-39
PS2021 Photo Coupler High Isolation Voltage Single Transistor ........................................ 5-43
PS2022 Photo Coupler High Isolation Voltage Darlington Transistor .................................... 5-47
PS2401A-1, PS2401A-2 PS2401A-3, S2401A-4 Multichannel Photo Coupler
High Isolation Voltage Single Transistors .......................................................... 5-51
PS3001, PS3002 SCR Photo Couplers .............................................................. 5-55
PS3001(1), PS3002(1) SCR Photo Couplers ...................................... '" ................. 5-59
Section 6 - Photo Interrupters
PS4001, PS4003, PS4005, PS4007, PS4009, PS4010, PS4011 Photo Interrupters ......................... 6-3
PS4008 Photo Interrupter ........................................................................... 6-9
PS4014 Photo Interrupter ........................................................................... 6-11
PS6001A Photo Reflective Sensor ................................................................... 6-13
Optoelectronics Applications Note Photo Interrupter ................... , .. " ......... , " ............... 6-17
Section 7 - Photo Transistors and Photo Diodes
PH101 NPN Epitaxial Darlington Photo Transistor Photo Detector ........................................ 7-3
PH102 NPN Epitaxial Photo Transistor Photo Detector .... , ............................................. 7-5
PH103 Darlington Photo Transistor ................................................................... 7-7
PH104 Photo Transistor ............................................................................ 7-11
PH106 Photo Transistor ............................................................................ 7-15
PH108 NPN Silicon Epitaxial Transistor .............................................................. 7-17
PH201A Photo Detector GaAsP Photo Diode ......................................................... 7-19
PH302 Plastic Molded Pin Photo Diode .............................................................. 7-21
PH302B Pin Photo Diode .......................................................................... 7-25
PH305 Plastic Molded Pin Photo Diode .............................................................. 7-29
PH309 Plastic Molded Pin Photo Diode .............................................................. 7-31
Optoelectronics Using Photo Interrupters ........ " .... '" " . " ....................................... 7-35
Optoelectronics Applications Note Infrared Remote Control ............................................ 7-41
Application of SE303A to Remote Control ............................................................ 7-47
v
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vi
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GENERAL INFORMATION
1-1
D
r-lEC
GENERAL INFORMATION
Section 1 - General Information
Introduction ........................................................................ 1-3
Ordering Information ................................................................ 1-4
Red LED Selection Guide ............................................................ 1-5
Green LED Selection Guide .......................................................... 1-5
AmberlYeliow LED Selection Guide ................................................... 1-5
Infrared LED Selection Guide ........................................................ 1-5
Photo Coupler Selection Guide ....................................................... 1-6
SCR Type Photo Coupler Selection Guide .............................................. 1-6
Photo Interrupter Selection Guide ..................................................... 1-6
Photo Transistor Selection Guide ..................................................... 1-6
Photo Diode Selection Guide ......................................................... 1-6
Cross Reference Guide .............................................................. 1-7
Handling Precautions ............................................................... 1-12
1-2
t\'EC
GENERAL INFORMATION
Introduction
The Optoelectronics Catalog illustrates the broad line of
devices that NEC offers to designers and manufacturers. The variety of components gives greater design
alternatives and the ability to choose the part that truly
fits the product needs. NEC's componets are designed
to satisfy industrial, communication, instrumentation,
and consumer applications.
Designed for easy reference, the catalog is divided into
the following sections.
General Information - Selection guides, cross reference, ordering information and handling precautions.
Quality and Reliability - Detailed specifications of Q
and R product testing.
Standard LED's and Fashion LED's - Light Emitting
Diodes are available in red, green, amber, and infrared
wavelengths. Standard shapes and sizes, as well as
NEC designed fashion lamps are also available.
Photo Couplers - NEC's photo couplers come in
standard configurations, as well as proprietary highperformance devices.
Photo Interrupters - These devices are available in
standard and unique NEC sizes. All have superior efficiency, stability and operating characteristics.
Photo Transistors and Photo Diodes - NEC has a
wide variety of components available to meet a majority
of design applications.
1-3
a
NEe
GENERAL INFORMATION
Ordering Information
NEC Electronics offers a broad line of optoelectronic products in the NEPOC series, giving the designer flexibility
and the latest in semiconductor technology.
NEC has maintained technological leadership in all facets
of optoelectronics, including visible LEDs, infrared (IR)
LEDs, photo interrupters, photo sensors, and photo
couplers. These devices are designed to cover industrial,
communication, instrumentation, and consumer applications with NEC's high quality and reliability.
Numbering System
s
Type Code--------T..J
Color Code
t
03
4
J
R = Red
G = Green
Y = Yellow or Amber
E = Infrared
D A
T~------Revision
The letters A to J are designated
for changes in parameter or
production process.
' - - - - - - - - Lens Type
D =
T =
C =
W=
Color and Material-----------"
1 = Red, GaAsP/GaAs A = 660
A= 565
3 = Infrared, GaAs
A = 940
4 = Yellow, GaAsP/GaP A = 585
5 = Red, GaP/GaP
A = 695
6 = Red, GaAsP/GaP A = 630
10 = Infrared, GaAlAs
A = 950
2 = Green, GaP/GaP
nm
nm
nm
nm
nm
nm
nm
Diffused, Tinted
Transparent, Tinted
Clear, Colorless
White, Diffused
' - - - - - - - - - - Style Codes
03, 13 = T1%, 5 mm Lamp
05,15 = T1, 3 mm Lamp
3X, 4X, 6X = Fashion Flat Top LED
1-4
NEe
GENERAL INFORMATION
SELECTION GUIDES
Red - Light Emitting Diodes
Amber/Yellow - Light Emitting Diodes
~plcal
MAX
~plcal
MAX
NEC
NEC
Part
Po
Number
(mW)
IF
(mA)
VF
(V)
Iv
(mcd)
Wavelength
Part
(nm)
Po
(.,A)
Number
(mW)
IR
IF
(mA)
VF
(V)
(.,A)
IR
Iv
(mcd)
Wavelength
(nm)
SR1060/C
80
40
1.6
0.01
1.512.5
660
SY4030AlTA
100
40
2.0
0.01
10130
590
SR5030/C/W
60
30
2.0
0.01
5/10/5
695
SY4050IT
100
40
2.2
0.01
214
590
SR5050/C/W
60
30
2.0
0.01
3.516/3.5
695
SY4060IT
100
40
2.0
0.01
3/4
590
SR5060/C
60
30
2.0
0.01
1/2
695
SY4130IT
100
40
2.0
0.01
10130
590
SR5130/C/W
60
30
2.0
0.01
5/10/5
695
SY4150IT
100
40
2.0
0.01
10/20
590
SR5310
60
30
2.0
0.01
0.5
695
SY4310
100
40
2.0
0.01
1.0
590
SR5330
60
30
2.0
0.01
0.5
695
SY4320
100
40
2.0. 0.01
1.2
590
SR5350
60
30
2.0
0.01
0.5
695
SY4330
0.01
1.0
60
30
2.0
0.01
0.5
695
SY4350
40
40
2.0
SR5360
100
100
2.0
0.01
1.0
590
590
590
SR5370
60
30
2.0
0.01
0.5
695
SY4360
100
40
2.0
0.01
1.0
SR5380
60
30
2.0
0.01
0.5
695
SY4370
100
40
2.0
0.01
1.0
590
SR5390
60
30
2.0
0.01
0.5
695
SY4380
100
40
2.0
0.01
1.0
590
SR5400
60
30
2.0
0.01
40
2.0
0.01
1.0
590
50
2.0
0.01
695
630
100
100
0.7
3/6/3
SY4390
SR6030/C/W
SY4400
100
40
2.0
0.01
1.5
SR6050/C/W
80
40
2.0
0.01
5/10/5
630
SY4610
100
40
2.0
0.01
1.5
590
590
SR6130/C/W
100
50
2.0
0.01
7/20/7
630
SR6150/C/W
100
50
2.0
0.01
8/16/8
630
SR6320
SR6610
100
100
40
2.0
0.01
1.2
40
2.0
0.01
1.0
630
630
Note: VF ................... Measured at IF=10mA
Measured at V R=4.5V
Iv .................... Measured at 'F=IO rnA
Wavel.ength measured at IF=IO rnA.
'R ....................
Infrared Light Emitting Diodes (lR LEDs)
Note: VF ................... Measured at IF= 10 rnA, except SRI 06 IF=20 rnA.
IR .................... Measured at V R=4.5V, except SRI06 VR=3V.
Iv .................... Measured at 'F= 10 rnA, except SRI 06 ' F=20 rnA.
Wavelength measured at IF=10 rnA.
Green-Light Emitting Diodes
MAX
NEC
Part
Po
Number
(mW)
SG2030AlTA
100
~pical
Iv
(mcd)
40
2.0
0.01
8/13
Wavelength
(nm)
565
SG2050IT
100
40
2.0
0.01
3/5
565
SG2060IT
100
40
2.0
0.01
1.513
565
SG2130IT
100
40
2.0
0.01
15/45
565
8G2150/1
100
40
2.0
0.01
10/20
565
SG231 0
100
40
2.0
0.01
1.0
8G2330
100
40
2.0
0.01
1.0
565
565
SG2350
100
40
2.0
0.01
1.0
565
SG2360
100
40
2.0
0.01
1.0
565
SG2370
100
40
2.0
0.01
1.0
565
SG2380
100
40
2.0
0.01
1.0
565
8G2390
100
40
2.0
0.01
1.0
565
SG2400
100
40
2.0
0.01
1.5
565
SG2610
100
40
2.0
0.01
1.5
565
Note: V F
~plcal
MAX
NEC
Part
Po
VF"F
(V/mA)
Po
~plcal
(mW)
IF
(mA)
IR
Number
(.,A)
(mW)
wavelength
SE301A
150
100
1.2 150
0.01
6
940nm
SE302A
75
50
1.2 130
0.01
1.5
940nm
SE303A
150
100
1.25/50
0.01
6.5
940nm
8E306
100
50
1.1 110
10
0.5
940nm
SE307
150
100
1.45/50
1.14/20
NIA
10
15
0.85
940nm
8E308
100
50
SE1003
150
50
1.25/50
0.01
20
950nm
940nm
Note: ,R testedat ...................................................................V R=3V.
Po testedat ................................................................. IF=30 rnA.
Wavelength tested at ................................................... IF':"30 rnA.
TA = 25°C for all data.
Measured at 'F = lOrnA.
Measured at V R = 4.SV.
Iv ............................... Measured at 'F = lOrnA.
Wavelength measured at 'F = lOrnA.
•.•••••••.•••••••.•••••.•••••.
'R ..............................
1-5
II
t-{EC
GENERAL INFORMATION
SELECTION GUIDES (Cont) .
Photo Interrupters
MAX
Photo Couplers
MAX
4N25
0.3
30
0.3
30
100/5
1.2
40
200 2000 1.4/20 400 1300/5
1.2
30
MCT2
80
100 2000 1.4110
50
PS20028
50
50 2500· 1.9/5
400
PS20048
50
PS20058 150
50 2000 2.0/100 200
25
8 3000· 1.7/16 N/A
PS20068
PS20078
10
PS2010
80
50 3000· 1.7/10 TTL
100 2000 1.4/10
50
20/20
101100 0.3 (4mA)
15
30
N/A
TTL out
600
20120
0.3
30
PS2021
80
100 4000 1.4110
50
50110
0.3
40
PS2022
80
100 4000 1.4110 100
200110
1.0
40
PS2031
80
100 2000 1.4/10
20120
0.3
200
PS2401A
80
8015
0.3
40
50
80 5000 1.4/10 100
NEC
Part
Number
IF
(mA)
VCEO
(V)
Ic
(mA)
VF
(V)
ICED
(nA)
VCE(sat)
(V)
PS4001
50
30
50
1.1
400
1.2
20
PS4003
50
30
50
1.1
400
1.2
15
PS4005
50
30
50
1.1
400
1.2
20
PS4007
50
30
50
1.1
400
1.2
20
PS4008
50
30
40
1.1
100
0.3
PS4009
50
30
50
1.1
400
1.2
20
PS4010
50
30
50
1.1
400
1.2
20
PS4011
50
30
50
1.1
400
1.2
20
PS4014
50
30
40
1.1
100
0.3
0.5
PS6001
50
30
40
1.4
N/A
0.3
N/A
CTR
(%)
0.5
Note: VF tested at ...........• IF=20mA, except PS6001A IF=30mA.
ICEO tested at .....•.... VcE =10V and IF=O.
VCE(saQ tested at .....•. IF=10 mA-lc=O.5 rnA.
CTR tested at .......... IF=10 mA-VCE=2V.
PS4008/PS6001 VCE("!) tested at ..... IF=1O mA-lc=50 pA.
The PS6001 is a photo reflective sensor.
Note: ICEO measured at Vce=10V and IF=O.
·Denotes DC volts; all others in AC volts.
Photo Diodes
Photo Couplers-SCA Type
MAX
MAX
NEe
NEC
Part
Number
I D8M•
(uA)
VTM
(V)
In'
(mA)
PS3001
200
300
2000
1.4/20
100
1.3
12
PS3002
400
300
2000
1.4/20
100
1.3
12
PS3001(1)
200
300
2500
1.4/20
100
1.3
12
PS3002(1)
400
11
2500
1.4/20
100
1.3
12
Part
Number
Note: 10RM with RGK = 27k!l and TA = 100'C.
VTM with IT = 300 rnA.
1FT with Vo = 6V and RGK = 270.
"Maximum Value
Pc
(mW)
.IF
(mA)
Sensitivity
(nA)lIx
90""
ID•
(pA)
t,
(nS)
3.0
PH201A
5
N/A
PH302
32
150
N/A
50
30
PH3028
32
150
N/A
32
30
50
PH305
20
150
N/A
30
10
30
PH309
20.
150
N/A
50
30
30
50
Note: t, tested at ............. RL =11<0.
10 tested at ............ VR=10V, except PH201 VR=2.0V.
Sensitivity In units of nAllx, except PH201 L;= l00lx.
Wavelength of maximum sensitivity Is 940nm.
"Maximum Value
·"Measured in nA
Photo Transistors
MAX
NEC
Part
Pc
Ic VCEO ICED
Number (mW) (mA) (V) (nA)
V8
(V)
VcE(sal)
(V)
PH101
100
50
20
500
1.5
4
PH102
100
40
30
200
0.3
.050
PH103
100
50
30
400
1.5
2
PH104
100
40
30
100
0.3
.020
PH106
100
40
30
100
0.3
.060
PH108
100
40
30
100
0.3 (IC = 0.5mA)
0.3 (VCE = 5V)
(H=5.0mW/cm2) (H=0.5mW/cm2)
Note: IcEotestedat .......................VcE=10V-L=0.
VCE("') tested at .................... L=1000Ix.
IL tested at ......................... VCE = 2V - L= 1001x.
"Minimum Value
1-6
ftt{EC
GENERAL INFORMATION
CROSS REFERENCE GUIDE
Photo Couplers
Fairchild No.
FCD810
FCD810C
FCD820
FCD820C
FCD825
FCD825C
FCD830
FCD830C
FCD831
FCD831C
FCD836
FCD836C
NECNo.
PS2010
PS2021
PS2010
PS2021
PS2010LlK
PS2021
PS2010
PS2021
PS2010
PS2021
PS2010
PS2021
Notes
1
1
1
1
1
1
1
1
1
1
1
1
General Electric No.
CNY171
CNY1711
CNY17111
CNY171V
CNY30
CNY31
CNY32
CNY34
CNY47
CNY47A
CNY48
CNY51
H11A1
H11A2
H11A3
H11A4
H11A5
H11A520
H11A550
H11A5100
H11B1
H11B2
H11B255
H11B3
H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
H15A1
H15A2
H15B1
H15B2
NECNo.
PS2021M
PS2021M
PS2021
PS2021
PS3001
PS2022
PS2021
PS3002L
PS2010M
PS2010LlK
PS2022L
PS2021K
PS2010LlK
PS2010
PS2010
PS2010
PS2010
PS2021L
PS2021L
PS2021K
PS2022L1K
PS2022
PS2022
PS2022
PS3001(1)
PS3001
PS3001
PS3002(1)
PS3002
PS3002
PS2021
PS2021
PS2022
PS2022
Notes
2,3
2,3
2,3
2,3
1
3
3
1
1
1
1
2,3
1
1
1
1
1
2,3
2,3
2,3
1
1
4
1
1
1
1
1
1
1
3
3
3
3
General Instrument No.
MCA230
MCA231
MCA255
MCA8
MCA81
NECNo.
PS2022
PS2022
PS2022
PS4001
PS4001
Notes
3
3
2
MCS2
MCS2400
MCT2
MCT2E
MCT26
MCT21 0
MCT271
MCT272
MCT273
MCT277
MCT4
MCT4R
MCT6
MCT66
MCT8
MCT81
PS3001(1)
PS3002(1)
PS2010
PS2021
PS2010
PS2021K
PS2021M
PS2021L
PS2021K
PS2021K
PS1001
PS1001
PS2401A-2
PS2401A-2
PS4014
PS4014
Hewlett-Packard No.
6N135
6N136
6N137
HCPL-2502
HCPL-2601
NECNo.
PS2006B
PS2006B
PS2007B
PS2006B
PS2007B
JedecNo.
4N25
4N25A
4N26
4N27
4N28
4N29
4N29A
4N30
4N31
4N32
4N32A
4N33
4N35
4N36
4N37
4N39
4N40
NECNo.
PS2021
PS2010
PS2010
PS2010
PS2010
PS2022
PS2022
PS2022
PS2022
PS2022
PS2022
PS2022
PS2021L
PS2010K
PS2010K
PS3001
PS3002
Notes
1,3
1
1
1
1
2,3
2,3
2,3
2,3
2,3
2,3
2,3
1
1
1
1
1
Litronics No.
IL-1
IL-12
IL-15
IL-16
IL-100
IL-101
IL-5
ILA-30
ILA-55
NECNo.
PS2010
PS2010
PS2010
PS2010
PS2007B
PS2007B
PS2010M
PS2022 .
PS2022
Notes
1
2
2
2
4
4
2
1
2,3
Notes: 1.
2.
3.
4.
1-7
1
1
1
1
1
1
2
2
2
1
4
4
4
4
Notes
1
1
1
2
4
Direct replacement.
Equivalent (minor electrical difference).
Equivalent (minor mechanical difference).
Different (significant difference, electrical or mechanical).
D
~EC
GENERAL INFORMATION
CROSS REFERENCE GUIDE (Cont)
Photo Couplers
Light Emitting Diode Lamps
Litronics No. (cont.)
ILCA2-30
ILCA2-55
ILCT-S
ILD-74
ILO-74
NEC No.
PS2022
PS2022
PS2401A-2
PS2401A-2
PS2401A-4
Notes
1
2,3
4
4
4
Siemens No.
CNY171
CNY1711
CNY17111
CNY171V
CNY1811
CNY18111
CNY181V
CNY18V
SFHSOOI
SFHSOOII
SFHSOOIII
SFHS01-1
SFHS01-2
SFHS01-3
SFHS01-4
NECNo.
PS2021M
PS2021LIM
PS2021L
PS2021K
PS1001
PS1001
PS1001
PS1001
PS2010L
PS2010K
PS2021K
PS2021M
PS2021M
PS2021L
PS2021K
Notes
2,3
2,3
2,3
2,3
4
4
4
4
2
2
2,3
2,3
2,3
2,3
2,3
Spectronics No.
SCD11B1
SCD11B2
SCD11B3
SPX-103
SPX-2
SPX-2E
SPX-26
SPX-33
SPX-35
SPX-4
SPX-5
SPX-53
SPX-S
NECNo.
PS2022
PS2022
PS2022
PS2021L1K
PS2021
PS2021
PS2021
PS2021
PS2021L1K
PS2021
PS2021
PS2021
PS2021
Notes
3
3
3
2,3
3
3
3
3
2,3
3
3
3
2,3
Telefunken No.
COY-80
NECNo.
PS2021L1K
Notes
2
Texas Instrument No.
TIL102
TIL 111
TIL112
TIL113
TIL114
TIL115
TIL11S
TIL117
TIL118
TIL119
NECNo.
PS1001
PS2010
PS2010
PS2022
PS2010
PS2010
PS2010
PS2010L
PS2010
PS2022
Notes
4
1
1
1
1
1
1
1
1
2
Notes: 1.
2.
3.
4.
Hewlett-Packard No.
5082-4650
5082-4S55
5082-4657
5082-4S58
5082-4S84
5082-4160
5082-4550
5082-4555
5082-4557
5082-4558
5082-4584
5082-4150
5082-4950
5082-4955
5082-4957
5082-4958
5082-4984
5082-4190
5082-4850
5082-4855
5082-4484
5082-4494
5082-4480
5082-4483
5082-448S
5082-4880
5082-4881
5082-4882
5082-4883
5082-4884
5082-4885
5082-4886
5082-4887
5082~4888
5082-4420
5082-4620
5082-4520
5082-4920
DialightNo.
521-91S5
521-9166
521-9190
521-9179
521-9189
521-918S
521-9195
521-9200
521-9202
521-9203
521-9204
521-9205
521-920S
521-9207
Direct replacement.
Equivalent (minor electrical difference).
Equivalent (minor mechanical difference).
Different (significant difference, electrical or mechanical).
1-8
NECNo.
SRS03D
SR603D
SR603C
SR603C
SRS05D
SR605D
SY403DA
SY403DA
SY403TA
SY403TA
SY405D
SY40SD
SG203DA
SG203DA
SG203TT
SG203TT
SG205D
SG20SD
SR503D
SR503D
SR505D
SR505D
SR505D
SR505W
SR505C
SR503D
SR503D
SR503D
SR503C
SR503C
SR503C
SR503W
SR503W
SR503W
SR504W
Notes
SY404D
SG204D
NECNo.
SR503D
SR503C
SR503W
SR503D
SR503D
SR10SD
SR505D
SR503D
SG203TA
SG203DA
SY403TA
SY403DA
SG205D
SY405D
Notes
ttlEC
GENERAL INFORMATION
CROSS REFERENCE GUIDE (Cont)
Light Emitting Diode Lamps
NEC No.
Dialight No. (cont.)
S21-9217
521-9185
SR503D
SR106C
Litronix No.
NECNo.
RL-20
RL-20-02
RL-20-03
RL-20-04
RL-21
RL-21-02
RL-21-04
RL-SO
RL-SO-01
RL-SO-02
RL-SO-03
RL-209
RL-209-02
RL-209-03
RL-209-04
RL-S4
RL-SS
RL-4484
RL-2000
RL-4403
RL4440
RL48S0
RL-SOS4-1
RL-SOS4-2
OL-30
OL-31
YL48S0
YL4484
YLS6
GL48S0
GL4484
GLS6
IRL40
IRL60
SR503D
General Instrument No.
MVSO
MVS4
MVS2
MVS3
MVSS
MVS020
MVS021
MVS022
MVS023
MVS024
MVS02S
MVS026
MVSOSO
MVSOS1
MVSOS2
Notes
Notes
SR503W
SR503C
SR505D
SRS1SC
SR106V
SR106D
SRSOSD
SRSOSW
SRSOSC
SR106D
SR106D
SRSOSD
SRS03D
SRS03D
SRS03D
SRS03D
SRS03D
SRS03D
SY403D
SY40SD
SY403DA
SY40SD
SY406D
SG203DA
SG20SD
SG206D
SE301A
SE302A
NECNo.
Notes
SR106D
SR106D
SG206D
SY406D
SY106D
SRS03C
SRS03W
SRS03D
SRS03D
SRS03D
SRS03D
SRS03C
SRS03W
MV5053
MV5054-1
MV5054-2
MV5054-3
MV505S
MV5056
MVS074B/C
MV5075B/C
MV51S2
MV5153
MV5154
MVS2S2
MV52S3
MVS2S4
MVS3S2
MV53S3
MVS7S2
MVS7S3
MVS3S4
MV5274B/C
MVS374B/C
MVS774B/C
ME60
ME61
ME7161
ME7021
ME7161
SRS03D
SR503D
SR503D
SR503D
SR503D
SRS03D
SR50SD
SRS05D
SY403TA
SYS03DA
SY403DA
SG203TA
SG203DA
SG203DA
SY403TA
SY403DA
SR603C
SR603D
SY403DA
SG20SD
SY40SD
SR603D
SE302A
SE302A
SE302A
Motorola No.
NECNo.
MLED60
MLED90
MLEDSOO
MLED630
MLED650
MLED7S0
SE302A
SE302A
SR104D
SRS03D
SG203DA
Intermetall No.
NECNo.
CQY6S
SR10SD
Stanley No.
GD-2-301R
GD-2-301C
GD-2-301G
GD-4-203
GD-4-204RD
GD-4-204CD
GD-4-204GD
GD-4-204YD
GD-4-20SRD
GD-4-20SCD
GD-4-20SGD
GD-4-20SYD
GD-4-S0SRD
NECNo.
Notes: 1.
2.
3.
4.
1-9
a
Notes
Notes
Notes
SR106C
SG206T
SRS03D
SRS03W
SG203DA
SY403DA
SR503D
SRS03W
SG203DA
SY403DA
SR50SD
Direct replacement.
Equivalent (minor electrical difference).
Equivalent (minor mechanical difference).
Different (significant difference, electrical or mechanical).
NEe
GENERAL INFORMATION
CROSS REFERENCE GUIDE (Cont)
Light Emitting Diode Lamps
NEC No.
SR505W
SG205D
SY405D
Notes
Stanley No. (cont.)
GD-4-505CD
GD-4-505GD
GD-4-505YD
SG2-01B
SG2-02B
SG2-03B
SG2-04B
SG2-05B
SG2-06B
SR505D
SG205D
SY405D
Texas Instrument No.
TIL203
TIL204
TIL209
TIL210
NECNo.
SR101C
SR104D
SR505D
SE301A
Notes
Siemens No.
CQY17
CQY18
LD261
LD30S
LD30C
LD401
LD4011
LD501
LD5011
NECNo.
SE301A
SE301A
SE302A
SR505D
SR505C
SR503D
SR503D
SR503D
SR503D
Notes
Telefunken No.
CQX10
CQX40L
CQX40/5VL
CQX40/12VL
CQX41
CQY85
V136PL
V137PL
V138P
V139P
V169P
V178P
CQX11
CQX40L
CQX40/5VL
CQX40/12VL
CQX41
CQY85
V137PL
V137PL
V138P
V139P
V169
V178P
CQX11
CQY72L
V169P
CQY73
NECNo.
SR503D
SR503D
SR503D
SR503D
SR106D
SR505D
SR503C
SR503W
SR106C
Notes
SR503D
SR105D
SR203DA
SR503D
SR503D
SR503D
SR106D
SR505D
SR503C
SR503W
SR106C
SR503D
SR105D
SG203D
SG203DA
SG203DA
SG206D
CQY86
V179P
CQX12
CQY74L
V170P
CQY75
CQY87
V180P
CQY32
CQY35
CQY34
CQY37
SG205D
SG205D
SY403DA
SY403DA
SY403DA
SY406D
SY405D
SY405D
SE301A
SE301A
SE301A
SE302A
Matsushita No.
LN21
LN21W
LN21RP
LN22
LN23
LN23S
LN23S(R)
LN25
LN25D
LN26D
LN31
LN32
LN35
LN35D
LN45
LN45D
LN322M
LN322S
LN51F/51FT
LN51 Ll51 LT
LN52
LN55
LN60
LN70
LN71
NECNo.
SR503D
SR503W
SR503D
OKINo.
OLD414
OLD414DG
OLD415
OLD415C
OLD415T
OLD416
OLD416LC
OLD416LD
OLD416LT
OLD419
OLD419C
OLD4101C
NECNo.
SR1 04D, SR1 04DA
SR104D, SR104DA
SR505C
Notes: 1.
2.
3.
4.
1-10
Notes
SR505W
SG203DA
SG205D
SR505D
SE301A
SE301A
SE301A
SE301A
Notes
SR505C
SR106C
SR106D
SR106C
Direct replacement.
Equivalent (minor electrical difference).
Equivalent (minor mechanical difference).
Different (significant difference, electrical or mechanical).
t\'EC
GENERAL INFORMATION
CROSS REFERENCE GUIDE (Cont)
Light Emitting Diode Lamps
OKI No. (cont.)
NEC No.
OLD4101D
SR503D
OLD41011
SR503C
OLD314D
SG204D
OLD314DG
SG204D
OLD315C
OLD315D
SG205D
OLD316LC
SG206T
OLD316LT
OLD319C
OLD319D
OLD3101C
SG203TA
OLD3101D
SG203DA
OLD31011T
OLD714D
SY404D
OLD714DG
SY404D
OLD715D
SY405D
OLD716LC
SY406T
OLD716LT
OLD719D
OLD7101C
SY403TA
OLD7101D
SY403DA
OLD7101T
OLD122
SE301A
OLD124
SE301A
Sharp No.
NECNo.
GL-3PR1
SR505D
SR505D
GL-3PR2
GL-5PR1
SR503D
GL-5PR2
SR503D
GL30PR
SR505D
GL-30PR3
SE505W
GL-30PRB
SR505C
GL-40PR
GL-40PR3
GL-31AR
SR505D
GL-31AR8
SR505C
GL-32AR
SR505D
GL-41AR
GL-41AR3
GL-51AR
SR104D
Notes
Notes
GL-30PG
GL-30PG8
GL-40PG
GL-40PG3
GL-50PG
GL50PG1
GL32PG
GL52PG
GL52AY
GL503
GL504
GL50G
GLE503
GLE503F
Toshiba No.
TLR101
TLR102
TLR103
TLR104
TLR105
TLR106
TLR107
TLR10B
TLR109
TLR110
TLR113
TLRl14
TLR115
TLRl16
TLR120
TLR202
TLG102
TLG103
TLG105
TLG107
TLG108
TLG113
TLG115
TLG202
TLN101
TLN103
Notes: 1.
2.
3.
4.
1-11
SG203DA
SG204D
SG205D
SG203DA
SY403DA
SE301A
SE301A
SE301A
SE301A
SE301A
NECNo.
SR104D
SR505D
Notes
SR503D
SR503W
SR505C
SR505W
SR503C
SR503C
SR503D
SR504D
SR503C
SG205D
SG203TA
SG205T
SG203T
SE301A
SE301A
Direct replacement.
Equivalent (minor electrical difference).
Equivalent (minor mechanical difference).
Different (significant difference, electrical or mechanical).
a
NEe
GENERAL INFORMATION
Handling Precautions:
1. Full resin-molded LED lamps generally have slightly
lower mechanical and thermal strength 'than other
resin-molded semiconductor devices, as they have
less additives. Therefore, please note the following.
(a) Leads should be soldered at a point 5mm or more
from the root of the leads at 260°C and within 5s.
(b) If the temperature of the molded portion rises,
in addition to the residual stress between leads,
the possibility of open or short circuiting due
to deformation or breakdown of the resin will
increase.
2. On cleaning the device:
(a) Cleaning with unsuitable solvent may damage the
resin of the package. The following solvents
should be used at a temperature of less than 45°C
with an immersion time of less than 3 min:
Freon TE, Freon TF, ethanol, methanol
Difron-solvent, isopropyl-alcohol
(b) Ultrasonic cleaning will place stress on the
devices. The degree of stress varies with the
output power, the size of the PCB, and the
mounting methods. It therefore should be confirmed experimentally, under actual conditions,
that such cleaning does not have an adverse
effect on the devices.
1-12
ftt{EC
QUALITY AND RELIABILITY
2-1
lEI
ftt{EC
QUALITY AND RELIABILITY
Section 2 - Quality and Reliability
Quality and Reliability ........................................ '" .................... 2-1
2-2
NEe
QUALITY AND RELIABILITY
Quality and Reliability
When it comes to quality and reliability, NEC is totally
committed. Our "zero defects" goal is woven into the
very fabric of the company.
Our Quality and Reliability Department is one of the
most powerful departments in NEC. Products are not
only tested upon completion, they are tested at every
phase of production - from the earliest design, to
manufacturing production.
This is NEC's TQC concept - Total Quality Control. It
guarantees our customers the highest possible quality
performance of NEC products.
Our optoelectronic components are guaranteed to an
AQL of 0.1 %. At least 9,999 of every 10,000 devices will
pass stringent electrical tests.
While zero defects may be an impossible goal, NEC
comes closer to it than anyone else in the industry.
And we're well on our way to an even higher quality
standard of only one defect per every 100,000 parts
produced.
NEC takes pride in offering the broadest variety of
components to fit your product needs. And all with the
highest quality and reliability available.
2-3
II
1ttfEC
QUALITY AND RELIABILITY
Photo Couplers - Plastic Dip
SubGroup
Inspeellon Hem
LTPO
Major Oeleels (Open. Short Visual. elc.)
1%
Acceptance Criteria After Reliability
Conformance Test
Item
Minimum
Maximum
Test Conditions
U x 1.2
ReIer to data book
ReIer to data book
2
Reliability Parameters (V F• IR• ICEO)
3%
3
4
Operallng Paramelers (CTR. VcE(sal). Rl-2) .
5%
IR(LEO)
U x 2.0
MinorOeleels (Visual and Mechanical. etc.)
5%
ICEO
U x 4.0
ReIer to data book
+30%U
Relerto data book
CTR'
Process Reliability Conformance Test
Sub
Group·
Method
Size
MIL750B Sample
Test
Test
Condition
1
External Appearance
2066
2
Soldering Temperature
2301.1
11
Temperature Cycling
1051.1
Thermal Shock
1056.1
oto 100'C lor
Shock
2016.1
1500g lorO.5ms.
Axis X. Y. and Z.
5 cycles
Vibration Var. Freq.
2056.1
Constant Acceleration
2006
4
Terminal Strength
(Lead Fatigue)
2036.1
11
227g. 90'. 3 times.
5
Salt Atmosphere
1046.1
11
35'C.24hr
10 to 50g/m2/day.
6'
O.C. Operating Llle
1026.1
22
II:Absolute maximum
current VCE=5V.
lor 1000 hours.
7'
High Temperature
Storage Llle
1031.1
22
125'C lor 1 khr
S'
Low Temperature
Storage
1031.1
22
-40'C lor lkhr
9'
High Temp. and High
Humidity Storage
1021.1
22
SOOC at 90% R.H.
lor 1khr
10'
High Temp. Biased
1031.1
22
125'C. VCE = 30V
lorlkhr
11'
Temperature Cycle
1051.1
100
-40 to +125"C
50. 100. 200 cycles
(see dlag.)
260 + 5'C lor
10+ sonce.
22
-40 to + 125'C lor
5 cycles.
5 cycles.
3
22
20G at 100Hz to 2kHz.
, Axis X. Y. and Z.
4mln.
20 kG. X. Y. and Z
axis lmln/4 cycles.
'Testing frequency is once every month.
Temperature Cycle Pattern
-30%L
Note: U = Upper limit specified on data sheet. L = Lower limit
specified on data sheet.
• Checked at 168 hours with -15%L. +15%U as acceptance
criteria.
fttIEC
QUALITY AND RELIABILITY
Table 2-1
An Example of Manufacturing Process Flow Chart for Light Emitting Diode (Plastic Molded Package)
Control Item
Process
I
I
Materials
Acceptance
Inspection
~
LED Wafer
J
1
Aluminum
Lead Frame
Diffusion
Metallization
J
l
Wafer Sorting
I
Pelletizing
.I
~
•
Die Mounting
~
Gold Bond Wire
Wire Bonding
~
Molding Compound
Molding
~
l
I
I
I
H
I
Thermal Aging
•
Lead Solder Plating
J
Lead Shearing
~
Electrical Sorting
Reliability
Verification
Test
Incoming Warehouse
Inspection
I
I
L
Storage
~
Shipment
Resistivity
Sheel Resistance
Breakdown Voltage
Appearance
I
{
I
Thickness
{ AIAppearance
Frequency
Remarks
Every Lot
Magnification
(40-400)
Every Lot
Magnification
(40-400)
Electrical
Characteristics
100%
I
Appearance
100%
Magnificallon
(40-100)
I
Appearance
Every Lot
Magnlficalion
(20-40)
Every Shift
Every Shift
Magnification
(20-40)
Appearance
Every Lot
Magnificalion
(1)
Temperalure
Duration
Every Day
Appearance
Every Lot
Magnification
(1)
Appearance
Every Lot
Magnlficalion
(1)
Electrical
Characteristics
(100% Sorting)
100%
Life Test
Environmental Test
Every
Test LOI
Electrical
Characteristics
Appearance
LTPD 1-3%
J
I
{ Appearance
Bond Strength
I
I
{
I
I
I
I
{
I {
I
I
Note: LTPD is according to MIL-S-19500 sampling plan.
2-5
LTPD 1-5%
Magnification
(1)
II
fttfEC
QUALITY AND RELIABILITY
Table 2-2
An Example of Initial Characteristics Test (Incoming
Warehouse Inspection) for Light Emitting Diode
(Plastic Molded Package)
Table 2-3
Acceptance for Light Emitting Diode
(Plastic Molded Package) After Reliability Test
Failure Criteria
Sampling Inspection Plan"
Group
Open and Short
Cutoff Current,
Forward Voltage
and LIght Current
Appearance
(Major Delect)
Appearance
(Minor Delect)
Hem
Open, Short
Test Item
Item
Sample Acceptance
LTPD
Size
Number
Resistance to
Solderl ng Heat
Reverse Current (IR)
1%
Temperature Cycling
Forward Voltage (VF)
Thermal Shock
LIghting Current (Ill
231
IR' IL' VF
3%
Molded Body
Breakage/Crack
Lead Breakage
1%
231
Molded Body
Oamage/Bubble
5%
DIrtiness, Lead Bent
77
0
129
Minimum Maximum Unit
Ux2
U x 1.1
-50
Mechanical Shock
Vibration, Variable
Frequency
0
Constant Acceleration
Salt Atmosphere
"LTPD is according to MIL-S-19500's LTPD Sampling Plan.
IntermlHent LIfe
High-Temperaure
Storage
Low-Temperaure
Storage
High-Temperature
High-Humidity
Storage
Terminal Strength
(Fatigue)
Terminal's
Appearance
No Breaking and
No Loosening
Salt Atmosphere
Terminal's
Appearance
No Extreme Rust
and No Corrosion
Note: U = Upper I.imit specified on data sheet.
2-6
pA
V
%
t-IEC
QUALITY AND RELIABILITY
Table 2-4
An Example of Reliability Test for Light Emitting Diode (Plastic Molded Package)
Equivalent Test Method
Test Item
Resislance 10 Soldering
Temperature Cycling
Thermal Shock
JIS-C
-7021
MIL-STD
-202
MIL-STD
-750
LEC
PUB 68
A-l Condo A
210 Condo 8
2031
Tb Melhod A
260·C, lOs,
once withoutllux
A-6
107
1051
Na
TSTG MIN - TSTG MAX,
30 cycles (30 min) (air)
1056 Condo 8
Nc
100·C -C, 5 cycles
(5 min) (liquid)
2016
Ea
1500G, 0.5ms
X, Y, Z, 5 limes each
2056
Fc
20G, 100 - 2000 - 100Hz
4 min, X, Y, Z, 4 times each
212
2006
Ga
20,OOOG,l min, X, Y, Z
211 Condo C
2036 Cond.E
Ub
At the specified
weight, 90·, 3 times
11
101
1041
Ka
TA = 35·C, concentration 5%
0.5 - 3.0mV80cm2/hr, 24 hr
11
= 25·C, specified current,
specified cycle, 1000 hr
20
A·3 Method II
Mechanical Shock
A-7 Condo F
Vibration, Variable Frequency
A-l0 Condo 0
Constant Acceleration
A-9 Condo A
Terminal Strength
Lead Faligue
Salt Atmosphere
A-12 Condo 8
213
Inlermittent Life
8-10
Low-Temperature Siorage
8-12
High-Temperature,
High-Humidity Storage
TA
1026
High-Temperature Storage
8-11 Cond, 8-C
108
1031
103
2-7
Test Condition
Sample
Size
Acceptance
Number
22
0
22
0
8a
TSTG MAX, 1000 hr
20
Aa
TSTG MIN, 1000 hr
20
Ca
TA = 60·C,
RH = 90% 1000 hr
20
0
0
NEe
QUALITY AND RELIABILITY
2-8
NEe
STANDARD LEDs
3-1
II
ttiEC
STANDARD LEDs
Section 3 - Standard LEDs
SE301A GaAs Infrared Emitting Diode ................................................ 3-3
SE302A GaAs Infrared Emitting Diode ................................................ 3-5
SE303A GaAs Infrared Emitting Diode ................................................ 3-7
SE306 GaAs Infrared Emitting Diode .................................................. 3-9
SE307 GaAs Infrared Emitting Diode ................................................. 3-11
SE308 GaAs Infrared Emitting Diode ................................................. 3-13
SE1003 GaAlAs on GaAs Infrared Emitting Diode ..................................... 3-15
SG2030A, SG203TA (Green) GaP High Intensity LEOs ................................ 3-17
SG2050, SG205T (Green) GaP LEOs ................................................ 3-19
SG2060, SG206T,SY4060,SY406T,SR506C, SR5060
(Green, Amber, Red) GaP LEOs .................................................. 3-21
SG2130, SG213T (Green) GaP High Intensity LEOs ................................... 3-23
SG2150, SG215T (Green) GaP High Intensity LEOs ................................... 3-25
SR106C, SR1060 (Red) GaAsP LEOs ............................................... 3-27
SR503C, SR5030, SR503W (Red) GaP High Intensity LEOs ........................... 3-29
SR505C, SR5050, SR505W (Red) GaP High Intensity LEOs ........................... 3-31
SR513C, SR5130, SR513W (Red) GaP High Intensity LEOs ............................ 3-33
SR603C, SR6030, SR603W (Red) GaAsP(N) High Intensity LEOs ...................... 3-35
SR605C, SR6050, SR605W (Red) GaAsP(N) High Intensity LEOs ...................... 3-37
SR613C, SR6130, SR613W (Red) GaAsP(N) High Intensity LEOs ....................... 3-39
SR615C, SR6150, SR615W (Red) GaAsP(N) High Intensity LEOs ....................... 3-41
SY4030A, SY403TA (Amber) GaAsP(N) High Intensity LEOS ........................... 3-43
SY4050, SY405T (Amber) GaAsP(N) High Intensity LEOs ............................. 3-45
SY4060, SY406T (Amber) GaAs LEOs .............................................. 3-47
SY4130, SY413T (Amber) GaAsP High Intensity LEOs ................................. 3-49
SY4150, SY415T (Amber) GaAsP High Intensity LEOs ................................. 3-51
3-2
SE301A
GaAs INFRARED
EMITTING DIODE
INDUSTRIAL USE
t-{EC
NEe Electronics Inc.
NEPCO SERIES
Description
Features
The SE301A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a TO-18 hermetically
sealed header with a glass lens. On forward bias, it emits
a spectrally narrow band of radiation peaking at 940nm.
The close wavelength match of this device to silicon sensors makes it ideally suited for all source-sense applications. Its low cost and volume producibility opens new
areas of use anywhere an infrared source is desirable.
o
o
o
o
o
o
Low cost
High output power - 3mW min
Fast switching time
Long life-solid state reliability
Compact, rugged, lightweight
Spectrally matched to silicon sensors
Applications
o
o
o
Package Dimensions
o
Paper tape and punch card readers
Optical encoders
Photo choppers
High speed optoelectronic data links
I-5.35 ro~~;~J-O·2 __
T().18
Header with
glass lens
t::::
Absolute Maximum Ratings
TA = +25°C
4.6 q, ± 0.2_
(0.181)
~
J
1!)
yr
-
0.016)
Peak Forward Current, IpEAK1
1000mA
S.OV
Reverse Voltage, VR
;,j
+12S0C
Junction Temperature, TJ
- 6SoC - + 12SoC
Storage Temperature, TSTG
I--- (0.018 q,)
-
-
100mA
Forward Current, IF
7.5 ax
(0.295 Max)
I
0.161), 0.2
lS0mW
Power Dissipation, Po
12.5MI
0.492 MI
Electro·Optical Characteristics
TA = +25°C
Umlls
Parameters
Forward Voltage
Symbol
Min
Typ
VF
Pulse Forward
Voltage
·Solderlng conditions are at 260°C or less within
5 sec. at 1.Smm or farther from the case.
CD Anode
® Cathode
Package Dimensions In MIllimeters (Inches)
aa.000231A
1.45
V
IF = 50mA
S.D
V
IF = 1.0A
100
pF
V = 0,
1= 1.0MHz
Peak Emission
Wavelength
APEAK
940
nm
IF = SOmA
Spectral Li ne
Hall Width
dA
60
nm
IF = SOmA
Output Power
Po
3.0
mW
IF = SOmA
Peak Output
Power
PPEAK1
lS
mW
IF = 1.0mA
Light Turn-On
and Turn-Oil
tON, tOFF
Note: 1. f = 1.0kHz, duty cycle 1%.
3-3
Unit
C
Capacitance
(Bottom View)
Test
Conditions
Max
ILs
II
ttiEC
SE301A
'tYplca. Characteristics (cont)
TA = +25°C
Maximum Forward Current vs Ambient Tempenture
Forward Current VB Forward Vollage
120
140
120
100
i
I
80
1
U
I
60
!
40
I
20
o
o
J
60
I
40
x
J
0.5
"'"
'l!
I
'l!
of
l':' 100
U~ 80
1.0
1.5
I
2.0
20
o
2.5
o
20
40
Relallve Output Power VI Case Temperature
0.5
~
0
i
- ---
-
I--.
-
I"'-- r-....
1"'--_
1.0
..i~
0.8
0
0.6
;;
I
0.1
II:
-20
20
1.0
0.4
I
/
/
I
II
0.6
0
0.4
i
0.2
o
8800
40
I
80
60
120
V
o
o
20
40
60
80
Spectral Distribution
Spatial Distribution
"
120
I
140
.,",,'
100
120
\
\
\
9400
9600
9800
r-.....
10000
12000
83-000237A
Wavelength [A]
3-4
I
140
\
"'
9200
I
140
/'"
Forward Current [mAl
/
9000
100
0.2
/'"
V
V
Case Temperatur. [OC]
/'
il
0.8
~
~
""'~
,-,-'
1.2
0.02
;;
100
Relative Output Power VB Forward CUrrent
0.05
..;
80
1.4
0.2
0.01
-40
60
Ambient Temperature eC]
10
j
"'" ""'~
:I
Forward Voltage [V]
~
;;
~
SE302A
GaAs INFRARED
EMITTING DIODE
INDUSTRIAL USE
NEe
NEG Electronics Inc.
NEPCO SERIES
Description
Features
The SE302A is a GaAs (Gallium Arsenide) infrared emitting diode which is mounted on a lead frame and molded
in a clear plastic lens. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm. The
clOse wavelength match of this device to silicon sensors
makes it ideally suited for all source-sense applications.
Its low cost and volume producibility open new areas of
use anywhere an infrared source is desirable.
o
o
o
o
o
o
o
o
Low cost
High output power
Fast switching time
Long life, solid state reliability
Compact, rugged, lightweight
Spectrally matched to silicon sensors (Good compatibility with Darlington photo transistor (PH101))
Easily assembled in linear arrays
Compatible with integrated circuits
Applications
Package Dimensions
o
o
o
o
o
o
2.4 Max
(0.094 Max)
Electro optical switches
Card and tape reader sources
Optical encoders
Photo choppers, isolator
High speed optoelectronic data links
Photo coupler
Absolute Maximum Ratings
0.51
(0.02)
TA = +25°C
Power Dissipation, Po
75mW
Forward Current, IF
50mA
Reverse Voltage, VR
3.0V
Junction Temperature, TJ
22.0 Min
(0.866 Min)
+80'C
Storage Temperature, TSTG
-30'C - +80'C
Electro-Optical Characteristics
TA = +25°C
Limits
Parameters
Package Olmenslons In Millimeters (Inches)
Forward Voltage
CD Anode
® Cathode
*Soldering conditions are at 260°C or less
within 5 sec. al 3mm or farther from the case.
83-000238A
Min
VF
Typ
Max
Unit
1.2
1.4
5.0
/-,V
V
Test
Conditions
IF = 50mA
VR - 3.0V
Reverse Current
'R
Capacitance
C
100
pF
V = 0,
f = 1.0MHz
APEAK
940
nm
IF
= 50mA
I!.>"
60
nm
IF
= 50mA
1.5
mW
'F
= 50mA
1.0
/-,s
Peak Emission
Wavelength
Spectral Line
Half Width
3-5
Symbol
Output Power
Po
Light Turn-On
and Turn-Olf
tON, tOFF
1.0
t-IEC
SE302A
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward Current vs Ambient Temperature
60
60
50
50
'" '"
;;'
!
c
~
u
40
..!
0
E 20
~
'M
10
o
!
"-
1! 30
~
;;'
o
20
40
I
U
I
40
30
1!
!
of
""""
60
I
80
100
20
10
o
I
J
o
0.5
1.0
1.5
2.5
2.0
Forward Voltage [V]
Ambient Temperature rOC]
Relative Output Power
Relative Output Power vs Forward Currenl
VB
Ambient Temperature
10
IF
1
/
,... /
~
o
o
",
-r---
/
0.5
lOrnA
-
0.2
0.1
0.05
V
0.02
20
10
30
40
0.01
-40
50
-20
20
40
60
80
100
120
I
140
Ambient Temperature rOC]
Forward Current [rnA]
Spatial Distribution
Spectral Distribution
-10'
1.0
0.8
r
°
;; 0.6
0.
I
I
~
0
~
0.4
&!
0.2
o
8800
/
9000
/
/
9200
'"
9400
If
\
9600
0'
= 30mA
\ '\
~
9800
..........
I
10000
Wavelength [AJ
3-6
- 50"
+-50"
-60"
+60'
-80"
+80"
.. 90"
U_L..L..-I_...L.::::::t:::::'J:!!!ji!!JII!!@E:::::t:=..l_...L.---1_L..J..J +90'
83·Q00244A
SE303A
GaAslNFRARED
EMITTING DIODE
"'EC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SE303A is a GaAs (gallium arsenide) infrared emitting diode which is mounted on the lead frames and
molded in plastic. On forward bias, it emits a spectrally
narrow band of radiation peaking at 940nm.
D
D
D
D
D
D
Package Dimensions
Economical
High output power
Wide half angle
Good linearity
Spectrally matched to silicon sensors
Long lead
Applications
D
D
D
D
Light source forlV remote control
Light source for smoke detector
Optical encoders
Photo choppers, isolator
Absolute Maximum Ratings
TA = +25°C
Clear
Plastic
Resin
cm:~$;='--i 5· L r--r---r-'I
(O~O~I)
3 ± 0.5
150mW
100mA
Pulse Forward Current, IFP1
1.0A
Reverse Voltage, VA
0.65
(0.026)
5.0V
Junction Temperature, TJ
0 118
(0.041)
Part A: 1.04
~
Power Dissipation, Po
Forward Current, IF
+80'C
Storage Temperature, TSTG
i(2
4· Min)
-30'C to +80"C
Part B: 0.65
(0.025)
Electro·Optical Characteristics
TA = +25°C
(0.945 Min)
Limits
Parameters
(Bottom View)
Package Dimensions in Millimeters (Inches)
Unit
V
IF = 50mA
2.5
3.0
V
IFP = 1.0A
CT
40
pF
V = 0,
f = 1.0MHz
Peak Emission
Wavelength
APEAK
940
nm
IF = 50mA
Spectral Line
Half Width
flA
60
nm
IF = 50mA
6.5
mW
IF = 50mA
mW
IFP = 1.0A
Output Power
Po
3.0
Peak Output
Power
PFp1
15
Light Turn·On
and Turn·OIl
tON, tOFF
Note: 1. f = 1.0kHz, duty cycle 1%.
83-0002458
3-7
Test
Conditions
1.45
(¢0.031 Max)
CD Anode
® Cathode
Max
1.25
Capacitance
B: ¢O.S Max
Typ
VF
Pulse Forward
Voltage
2 ± 0.5
(0.079)
Min
VFp1
Forward Voltage
A: q,1.2 Max
(¢0.047 Max)
Symbol
/.LS
11
NEe
SE303A
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward Current vs Ambient Temperature
1000
120
<:
oS
100
'E
~
80
'!!
~
60
E
40
!
20
~
"'-
is
""
{t
~
....... 1'
/"
o
o
20
40
I
~
Ambient Temperature
I
""
80
60
re]
L
I
1
1.0.
100
1.5
2.0
2.5
3.0
Forward Voltage (VI
Relative Intensity vs Ambient Temperature
Output Power vs Forward Current
14
;/"
./
12
r----
!i
oS
---- - -
;
.
25
/
'0
:;;
g.
--....
~
0
t--...
I
0.5
-25
'/
10
75
50
100
V
/'
o
Ambient Temperature [OCI
V
o
20
/
/
40
60
80
100
i
120
Forward Current [mA1
Spectral Distribution
1.0
0.8
f
0.6
/
~
~
Gi
0.4
a:
880
IF = 50mA
\
J
0.2
o
/
/' '\
/
900
920
940
960
-50"
\ '\
-60"
""
980
...........
<
i
-70"
+70"
-80"
+80"
-90" Ll_L..L---1_.c::t::~~II/Ii;§~:::t=.t_L...l..---1_.lJ +90"
1000
83-000251A
Wavelength {nm1
3-8
NEe
NEC Electronics Inc.
SE306
GaAslNFAAAED
EMITTING DIODE
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25°C
The SE306 is a GaAs (Gallium Arsenide) infrared LED in
a plastic molded package, and is very suitable for a detector of a photo interrupter. On forward bias, it emits a
spectrally narrow band of radiation peaking at 940nm.
100mW
Power Dissipation, Po
50mA
Forward Current, IF
5V
Reverse Voltage, VR
100·C
Junction Temperature, TJ
Package Dimensions
-4D"C to +100·C
Storage Temperature, T5TG
Electrical Characteristics
TA = +25°C
Limits
Parameters
1°
Package Dimensions In Millimeters (Inches)
1®
CD Anode
® Cathode
83-OOO252A
3-9
Symbol
Min
Typ
Max
Unit
Test
Conditions
= 10mA
= 5V
V = 0,
f = 1.0MHz
Forward Voltage
VF
1.4
V
Reverse Current
IR
10
p.A
Capacitance
CT
100
pF
Peak Emission
Wavelength
hPEAK
940
nm
IF
= 10mA
Spectral Line
Half Width
4h
60
nm
IF
= 10mA
Output Power
Po
mW/sr IF
= 10mA
0.2
IF
VR
II
NEe
5E306
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
C'
60
50
50
g
.
!
...
.
~
"l!
40
30
0
E 20
E
N
:ll
Forward Current vs Forward Vollage
60
10
o
o
20
'" "''" l'\.
'"
40
60
C'
g
40
~
30
8
I
'E!
~
If
I
100
80
20
10
I
J
o
o
0.5
g
1.0
Ambient Temperature [DC]
1.5
2.5
2.0
Forward Voltage [V]
Relative LUminous Intensity vs Forward CUrrent
Relative Luminous Intensity vs Ambient Temperature
10
-r---
2
f~
/'f"
'E
.:3
1
I
/'
~
o
o
/'
V
0.1
0.05
20
40
30
0.01
-40
50
.
0
0.6
I
I
0
c
'E
.:3
I
0.4
0:
0.2
o
880
/
900
/
/ "\
IF"" 1DmA
1\
\ '\
920
940
-20
20
40
60
80
Ambient Temperature rOC]
Spectral Distribution
~
120
0.2
Forward Current [mA]
~
100
r---.
0.02
10
0.8
10mA
0.5
/'"
1.0
IF
960
"'"
980
..........
!
~
1000
Wavelength [nmJ
3-10
I
140
t-{EC
SE307
GaAslNFRARED
EMITTING DIODE
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SE307 is a GaAs (Gallium Arsenide) infrared emitting
diode which is mounted on the lead frames and molded in
plastic. On forward bias, it emits a spectrally narrow band
of radiation peaking at 940nm.
o
Package Dimensions
o
o
o
o
o
Applications
o
o
o
o
Resin
0.8
(0.031)
5'
Part A: 1.04
(0.041)
Part B: 0.6
(0.024)
Light source for TV remote control
Light source for smoke detector
Optical encoders
Photo choppers, isolators
Absolute Maximum Ratings
TA = +25°C
Slack
Plastic
0.8
(0.031)
Economical
High radiant intensity
Narrow half angle
Good linearity
Spectrally matched to silicon sensors
Long lead
4.3 ± 0.5
J~
Power Dissipation, Po
150mW
Lhr----.........
Forward Current, IF
100mA
~
Pulse Forward Current, IFP1
1.5A
Reverse Voltage, VR
5.0V
0.6
(0.024)
Junction Temperature, TJ
+80'C
-30'C to +80'C
Storage Temperature, TsrG
Electro·Optical Characteristics
TA = +25°C
(0.945 Min)
limits
A: 111.2 Max
(~0.047 Max)
2 ± 0.5
(0.079)
B
Max
Unit
VF
1.25
1.45
V
IF = 50mA
VFp1
2.5
3.0
V
IFP = 1.0A
Cr
40
pF
r = 1.0MHz
Peak Emission
wavelength
APEAK
940
nm
IF = 50mA
Spectral Line
Hall Width
6.1.
60
nm
IF = 50mA
Radiant intensity
Forward Voltage
Pulse Forward
Voltage
B: 410.8 Max
(~0.031
Capacitance
Max)
(Bottom View)
CD Anode
® Cathode
Package Dimensions In Millimeters (Inches)
Symbol
Min
IE
10
Peak Output
Power
PFp1
15
Light Turn·On
and Turn·Oll
tON,tOFF
30
Note: 1. f = 1.0kHz, duty cycle 1%.
83-0002568
3-11
Test
Conditions
Typ
Parameters
V = 0,
mWlsr IF = 50mA
mW
ILs
IFP =1.0A
t\'EC
5E307
Typical Characteristics
TA = +25°C
Maximum Forward Current VB Ambient Temperature
Forward Current vs Forward Voltage
120
<
g
~
~
1000
100
'"
80
"",-
G
'!!
!
.
L
V
60
0
E 40
~
~
I
I
-i
::E
20
o
o
20
"'"
40
60
Ambient Temperature rOC]
I
""
80
100
I
1
1.0
2.0
1.5
Relative Intensity VB Forward Current
Relative Intensity vs Ambient Temperature
14
r----
~
i
10
2.0
1.0
II>'
0.5
---- - - 50
25
-25
L
.....
Ambient Temperature
~
I
100
75
/
o
o
[~CJ
-
V I--'
12
~
~
3.0
2.5
Forward Voltage {Vl
V
V
l./'
V
V V
/
200
600
400
F~rward
8DO
1000
I
1200
Curr,n' {rnA]
Spatial Distribution
Spectral Distribution
1.0
0.8
I
880
/' '\
/
900
\
920
940
960
o·
IF= SOmA
1\
J
0.2
o
/
-10·
+50·
-50·
-60·
"\
"-
980
-70·
""""
i
1000
Wavelength [nm}
3-12
-80·
-90· L_L__L_.::::I::::~.!!@:::::::::::C__L_"""':L~ +90·
83-00025BA
SE308
tttrEC
GaAsDlNIlFRARED
IEMft'll"TONG DIODE
NEe Electronics Inc.
NEPOC SERIES
Absolute Mallimum Ratings
TA = +25°C
Description
The SE30B is a GaAs (Gallium Arsenide) infrared LED in
a plastic molded package, and is very suitable as a detector of a photo interrupter. On forward bias, it emits a
spectrally narrow band of radiation peaking at 940nm.
100mW
Power Dissipation, Po
Forward Current, IF
50mA
Reverse Voltage, Vn
5V
100'C
Junction Temperature, TJ
Operating Temperature, TOPT
Package Dimensions
-20'C - +80'C
Storage Temperature, TSTG
TRANSPARENT
EPOXY
Electrical Characteristics
TA = +25°C
2.5
I..
(0.098)
t - 4-
l'
0.76
.030)
~':" ®~ (i)~
I
1_
,:;:,
J
(0~O~8)-
I--
0.46~
(0.018)
U
.1
Package Dimensions in Millimeters (Inches)
1°
ICD
G) Anode
® Cathode
83-000259A
3-13
Min
Test
Conditions
Typ
Max
1.1
1.4
V
IF = 20mA
5
j.tA
Vn = 5V
Unit
VF
Reverse Current
In
Capacitance
CT
100
pF
V = 0,
f = 1.0MHz
I.PEAK
940
nm
IF = 20mA
Spectral Line
Half Width
Ll.1.
60
nm
IF = 20mA
Radiant Intensity
Ie
Response Time tON, tOFF
,
2.54
1(0.100)1
Symbol
Forward Voltage
Peak Emission
Wavelength
T
(0.043) 16.5 , 1.0
Limits
-
~~
1d;::::;:::::f==;:::::?J-~
.I
Parameters
2.8
(0.110)
~
-40'C - + 100'C
0.5
0.85
mW/sr IF = 20mA
p's
IF = 20mA
t\fEC
SE308
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward Current va Ambient Temperature
~
"
a
0
60
0
50
~
40
'I! 30
~
C
!.
~
~
~
10
20
u 30
'I!
~
~
"
60
40
40
~
~
~ 20
:i
.
,
I
80
100
20
10
o
0.5
1.0
/'
/
/
VB
Relative Output Power vs Ambient Temperature
Forward Current
/'
10
/
0.5
«
I
40
30
50
/
..
i
0.4
~
880
IF = 20mA
1\
\
11
0.2
o
V '\
I
~
0
/
900
920
940
I
0.02
0.01
-40
-20
20
40
60
80
Ambient Temperature [DC]
Spectral Distribution
%0.6
--
20mA
0.2
Forward Current [rnA]
0
IF
0.1
10
0.8
2.5
2.0
0.05
20
1.0
1.5
Forward Vollage [Vl
Ambient Temperature [DC]
Relative Luminous Intensity
I
J
o
960
'\
'"
980
..........
I
::s
1000
Wavelength [nm]
3-14
100
120
1;l
140
NEe
NEe Electronics Inc.
SE1003
GaAIAs on GaAs
INFRARED
EMITTING DIODE
NEPOC SERIES
Description
Features
The SE1003 is a GaAlAs on GaAs Infrared Emitting
Diode which is mounted on a lead frame and molded in
plastic. On forward bias, it emits a spectrally narrow
band of radiation peaking at 950nm.
D
D
D
D
D
D
Package Dimensions
Applications
D
D
D
D
Clear
Plastic
Resin
Economical
High output power
Wide half angle
Good linearity
Spectrally matched to silicon sensors
Long lead
Light source for TV remote control
Light source for smoke detector
Optical encoders
Photo choppers, isolators
Absolute Maximum Ratings
TA = +25°C
q~$;=--i
(O~O~l)
3.3
0.5
L f-r--r-'I
~
0.65
(0.026)
0 130
(0.041)
Part A: 1.04
~
5·
Power Dissipation, Po
150mW
Forward Currenl, 'F
100mA
Pulse Forward Current, IFPl
1.0A
Reverse Voltage, VR
5.0V
Junction Temperature, TJ
i ( 2
4· Mln)
Part B: 0.65
+80'C
Storage Temperalure, TsrG
(0.025)
-30'C to +80'C
(0.945 Min)
Electro·Optical Characteristics
TA = +25°C
Umits
(¢0.047 Max)
B: 1.2 Max
Min
12
20
= 1.0kHz, duty cycle 1%.
V = 0,
mW/sr 'F = 50mA
p.S
II
NEe
SE1003
Typical Characteristics
TA = +25°C
Maximum Forward Current vs Ambient Temperature
Forward Current vs Forward Vortage
120
C
.§.
~
1000
100
~
80
(}
i..
60
.§.
1:
~
E 40
~
20
o
o
20
60
40
100
~
(}
11
"" ""'"
0
!
,,- ....
~
I
J
/
10
I
I
i6
1
1.0
100
80
1.5
2.0
3.0
2.5
Forward Voltage IV}
Ambient Temperature lOCI
Relative Intensity vs Ambient Temperature
Output Power vs Forward Current
14
/'
./
12
f
~
~
2.0
~
~
1.0
-----I--- -- -- --..
§:
.§.
;
°
S.
25
~
0
.......
"
I
75
50
100
/
o
Ambient Temperature lOCI
0.8
l:
i
i
0.6
/
0.4
/
0:
0.2
o
880
/
I
V\
IF = 50mA
\
I
-50'
\
_50'
\
~
/
_70'
.........
!
:;;
900
920
940
V
o
V
20
L
40
/
60
Forward Current [rnA]
Spectral Distribution
1.0
/:
0-
0.5
-25
/'
10
960
980
1000
Wavelength (nm]
3-16
_80'
-90'
80
100
I
120
NEe
NEe Electronics Inc.
SG203DA/TA
GREEN
GaP HIGH
INTENSITY LEDs
NEPOC SERIES
Description
Features
The SG203DA and SG203TA are full resin-molded LED
lamps and emit bright and vivid green light. They are
especially suitable for electronic equipment in audio
applications which require high-brightness displays.
o
o
o
High intensity
Wide angle
Long lead
O· Low cost
o Compatible with integrated circuits
Package Dimensions
Applications
SG203DA:
Green diffused
plastic lens
SG203TA:
Green clear
plastic lens
o
o
o
o
o
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
Absolute Maximum Ratings
TA
'1r-~~=----t 5· L h----.---'!
(O~D:l)1
3 ~ 0.5 ~
0.65
(0.026)
0 1I8
(0.041)
Part A: 1.04
= +25°C
100mW
Power Dissipation, Po
40mA
Forward Current, IF
5V
Reverse Voltage, VR
100'C
Junction Temperature, TJ
i(2
4· MIn)
-40'C to +100'C
Storage Temperature, TSTG
Part B: 0.65
(0.025)
(0.945 Min)
Electro-Optical Characteristics
TA = +25°C
Limits
Parameters
A:~1.2Max
(~0.047
Min
Typ
Max
Unit
Forward Voltage
VF
2.2
2.5
V
'F = 10mA
In
0.01
10
/LA
VR = 4.5
CT
60
pF
V = 0,
1= 1.OMHz
Peak Emission
Wavelength
ApEAK
565
nm
IF = 10mA
Spectral Line
Half Width
IlA
40
nm
'F = 10mA
Luminous
Intensity
(SG203DA)
Iv
8
mcd
'F = 10mA
Luminous
Intensity
(SG203TA)
Iv
13
mcd
IF = 10mA
0.5
(0.079)
B: $D.8 Max
(~0.031
Max)
Capacitance
(BoHom View)
CD Anode
® Cathode
Package Dimensions In Millimeters (Inches)
83-0002688
Test
Conditions
Reverse Current
2~
Max)
Symbol
3-17
2
NEe
SG203DA/TA
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward Current VI Ambient Temperature
50
50
v
30
./
20
C'
I
G
'I'-..
10
C'
.......
!
30
'" '"
1!
.!e
J
0
V
40
!
20
~
~
o
20
40
II
i!
.........
tl.
"
10
o
/
~
CJ
1!
60
80
0.3
0.2
I
I
0.1
1.4
100
1.6
1.8
Ambient Temperature rOC]
Relative Intensity
..........
~
1
VB
r7
/
/
/
--
~
0.3
/
/
/
0.2
20
7
7
~ 0.5
-20
I
2.6
Relative Intensity vs Forward Current
r--..... ..........
c!
-40
2.4
Forward Voltage [V]
AmbIent Temperature
.5
0.1
2.2
2.0
40
60
80
100
o
o
120
Ambient Temperature rOC]
-
/
./'
I
./
20
10
50
40
30
Forward Current [rnA]
Spatial Distribution
Spectral Distribution
1.2
1.0
+50
0
+60
~
0.8
~
0.6
-,
I
I
I
.~
0
j
II!
1\
-\
II
0.2
500
\
\
\
I
0.4
+70 0
o
\\
... v
520
540
\
1
I\.
560
Wavelength [nm]
3-18
580
600
I
620
-
- -- - -
...-
-
NEe
NEe Electronics Inc.
SG205D/T
GREEN·
GaPLEDs
NEPOC SERIES
Description
Absolute Maximum Ratings
TA=+25°C
The SG205D and SG205T are GaP (Gallium Phosphide) light emitting diodes which are mounted on lead
frames and molded in diffused green and clear green
plastic, respectively. They are ideally suited for front
panel indicator applications.
Juncllon Temperalure, TJ
Limits
Parameters
VF
IR
0.01
CT
Peak EmiSSion
Wavelenglh
Speclral Line
Half Widlh
I
(0'032~
1.0
(0.04)L
t
0.6
SG205D:
Green Diffused
Plastic lens.
SG205T:
Green Clear
Plastic lens.
± 0.1
(0.024)
00.5
(00.02)
IEIIlHaiS--
CD Anode
® Cathode
Typ
Max
Unit
Test
Conditions
2.5
V
IF = 10mA
50
J.LA
VR = 4.5V
60
pF
V = 0,
1= 1.0MHz
APEAK
565
nm
IF = 10mA
OoA
30
nm
'F = 10mA
3/5
mcd
'F = 10mA
1V1I1V21
1/2
Notes: 1. IV1/1V2: Luminous intensity of SG205D/iuminous intensity
of SG205T.
0.106)
0.8
Min
Reverse Currenl
Luminous
Intensily
~ 2.7 ± 0'2-m(~
0.118)
Symbol
Forward Vollage
Capacilance
rb3.0 ±O.2
!
-30°C 10 +SO°C
Electro·Optical Characteristics
Package Dimensions
5.0
(0.197)
+80°C
TA = +25°C
Visual displays
Guard systems
Radio or stereo equipment indicators
Measuring instruments, terminals
(~
5V
Reverse Vollage, VR
SIorage Temperalure, TSTG
Long life-solid state reliability
Lowcost
High intensity with low current
Versatile mounting on PC board or panel
Compatible with integrated circuits
Fast switching time
Applications
o
o
o
o
40mA
Forward Currenl, IF
Features
o
o
o
o
o
o
100mW
Power Dlssipalion, PD
(BoHom View)
Package Dimensions In Millimeters (Inches)
83-000275A
3-19
II
ttiEC
SG205D/T
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient
~
1
Temp.r.tu~
Forward Current
60
60
50
50
'" '"'"
!
20
:II
10
Forward Voltage
C-
40
~
u
'I! 30
of
~
VI
~
o
o
20
40
§. 40
"-
60
~
60
u
'I!
~
~
30
of
!
20
I
!I
10
I
Ambient Temperature [OCJ
Forward Vollaga [Vj
SpeClral Distribution
Relative Intensity VI Forward Curren.,
1.0
1
/
V
10
~
20
..'""
~
~
d!
40
I
50
I
0.6
0.4
/
0.2
o
/
Spatial Distribution
-50'
-60'
-70'
-60'
__~-L__~~__~~~~~~-L__L--L__~-L__LJ+oo·
83·000280A
3-20
\
\
~
535
545
555
565
Wavelength [nm]
Forward Current [mAl
_90·~
:i "\
O.S
V
30
I
)
100
575
5S5
"" I
595
NEe
NEG Electronics Inc.
SG206D/T, SY406D/T, SR506C/D
GREEN, AMBER, RED
GaPLEDs
NEPOC SERIES
Description
Absolute Maximum Ratings
TA
These six LEDs are full resin-molded LED lamps which
uniformly emit brilliant red, green and amber light. They
are especially suitable for electronic equipment in
audio applications which require fancy displays.
60/100mW
30/40mA
5V
Reverse Voltage, VR
Junction Temperature, TJ
-40'C to +100'C
Note: 1. SR506D, SR506C/SG206D, SG206T, SY406D, SY406T.
Electro-Optical Characteristics
Visual displays
Radio and stereo equipment indicators
Portable equipment indicators
Camera indicators
TA = +25°C
Umits
Parameters
iP'acClage Dimensions
2.4 Max
(0.094 Max)
100'C
Storage Temperature, T81G
Small size
Lowcost
Easily assembled in arrays
Bright red, green or amber
Compatible with integrated circuits
Applications
D
D
D
D
+25°C
Forward Current, IFl
Features
D
D
D
D
D
=
Power Dissipation, Pol
Package Dimensions in Millimeters (Inches)
Symbol
Min
Typ
Max
Unit
Forward Voltage
SR506D/SR506C
VF
2.0
2.6
V
IF = lOrnA
SG206D/SG206T
VF
2.0
2.6
V
IF = lOrnA
SY406D/SY406T
VF
2.0
2.5
V
IF = lOrnA
Reverse Current
SR506D/SR506C
IR
0.01
10
J.LA
VR = 4.5V
SG206D/SG206T
IR
0.01
10
J.LA
VR
=
4.5V
SY406D/SY406T
IR
0.01
10
J.LA
VR
=
4.5V
SR506D/SR506C
C1
100
pF
v = 0,
SG206D/SG206T
C1
100
pF
V = 0,
f = 1.0MHz
SY406D/SY406T
C1
100
pF
V = 0,
f = 1.0MHz
Peak Emission
Wavelength
SR506D/SR506C ApEAK
695
nm
SG206D/SG206T ApEAK
565
nm
IF
SY406D/SY406T ApEAK
590
nm
IF = 10mA
Capacitance
22. Min
(0.B66 Min)
Spectral Une
Half Width
SR506D/SR506C LlA
CD Anode
® Cathode
SR506D:
SR506C:
5G2060:
SG206T:
SY406D:
SY406T:
B3-OO030eA
3-21
f = 1.0MHz
=
lOrnA
100
nm
IF = lOrnA
LlA
40
nm
IF = lOrnA
SG406D/SG406T LlA
40
nm
IF = lOrnA
SY206D/SY206T
Red diffused plastic lens
Clear plasUc lens
Green diffused plastic lens
Green transparent plastic lens
Amber diffused plastic lens
Amber transparent plastic lens
Test
Conditions
Luminous
Intensity
SR506D/SR506C
IV
0.5/1
1/2
mcd
IF = lOrnA
SG206D/SG206T
IV
0.5/1
1.5/3
mcd
IF = lOrnA
SY406D/SY406T
Iv
0.5/1
1.5/3
mcd
IF = lOrnA
t-IEC
SG206D/T, SY406D/T, SR506C/D
Typical Characteristics
TA = +25°C
MaxImum Forward Current vs Ambient Temperature
Forward Current VB Forward Voltage
50
C
oS
50
40
.......
. / SG206D,T,SY406D,T
C
~
U
10
°
u. 20
i'....
"
...........
.........
10
o
o
20
...........
fs
SG206D,T
I3
"'" "'"
.........
SR506D,C / '
40
/I
III
i!
!
0
u.
"
0.5
~
0.2
gj
II
0.1
100
80
60
0.3
1.4
1.6
V
/
/
V
o
0.2
-20
20
40
60
80
100
o
120
Ambient Temperature rOC]
/
V
SG206D,T
SY4060,T
/
/
/
/
/
/
/
./
........
./
10
20
30
/
V
SR506D,C
/
10
20
Forward Current [mAl
Relative Intensity YS Forward Current
o
-
2.6
~
0.3
o
2.4
Relative Intensity vs Forward Current
......... ...........
./
2.2
Relative Intensity vs Ambient Temperature
0.5
-40
2.0
Forward Voltage [V]
IJ.
0.1
1.8
AmbIent Temperature rOC]
s
j
"-.y ~SR506D,C
oS
30
!
././
SY406D,T
C
.........
i!
~
.~
:I\l
~
30
20
40
I
50
Forward Current [rnA]
3-22
30
40
SG213D/T
GREEN
GaP HIGH
INTENSITY LEDs
~EC
NEG Electronics Inc.
NEPOC SERIES
Description
Features
The SG213D and SG213T are full resin-molded LED
lamps which emit bright, brilliant, uniform green light
proportional to the forward current (IF). They are
especially suitable for electronic equipment in audio
applications which require bright, vivid displays. The
SG213T is especially suitable as a backlighting source.
o
o
o
o
o
~
Applications
o
o
o
o
o
Package Dimensions
4.8 , 0.3
(q, 0.188)
High intensity
Bright green
Long lead
Low cost
Compatible with integrated circuits
q, (q,4.6'
0.3_t:::i::~_ _ _ _ _,...
0.181)
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
Absolute Maximum Ratings
TA = +25°C
100mW
Power Dissipation, Po
Forward Current, IF
40mA
5V
Reverse Voltage, VR
Junction Temperature, TJ
Part A: 1.0
(0.041)
100'C
-40'C to +100'C
Storage Temperature, TSTG
Part B: 0.6
(0.024)
24 in
(0.945 Min)
Electro-Optical Characteristics
TA = +25°C
Limits
Part A: cI> 1.2 Max
(0.047)
Part B:
c/l
Parameters
0.8 Max
(0.031)
SG213D:
Green diffused
CD Anode
® Cathode
plastic lens
SG213T:
Min
Typ
Max
Unit
Package Dimensions in Millimeters (Inches)
B3·Q00281A
= lOrnA
= 4.5
V = 0,
f = 1.0MHz
VF
2.0
2.5
V
Reverse Current
IR
0.01
10
/LA
CT
60
pF
APEAK
565
nm
IF
= 10mA
40
nm
IF
= 10mA
Pale green
clear plastic
lens
Test
.Conditions
Forward Voltage
Capacitance
Peak Emission
Wavelength
(Bottom View)
Symbol
Spectral Line
Hall Width
IF
VR
Luminous
Intensity
(5G213D)
IV
3
15
mcd
IF = lOrnA
Luminous
Intensity
(5G213T)
IV
12
45
mcd
IF = lOrnA
3-23
II
tttlEC
SG213D/T
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
Forward Current va Forward Voltage
50
50
30
/"
20
<'
40
oS
~
il
......
~
.
II.
30
c
'" "
20
E
I
~
o
20
40
1!
!
i!
"""
of
"'"
I
SO
60
100
0.5
0.3
/
0.1
1.4
1.6
1.S
2.2
2.0
Relative Intensity vs Ambient Temperature
Relative Intensity VI Forward Currenl
2.6
L
r---...
/'
V
./
V
~
/"
0.5
!
0.3
",
0.2
0.1
-40
-20
20
40
60
SO
100
o
..........
o
120
L
./
10
20
30
Forward Currenl [mAl
Ambient Temperature rOC]
Spatial Distribution
Spectral Distribution
1.2
1.0
\
l:: 0.8
I
.~
~
0.6
~
0.4
~
2.4
Forward Voltage [V]
i
i
I
I
0.2
Ambient Temperature rOC]
i'-- ...........
l!'
/
il
10
o
/'
10
<'
.§.
........
1!
~
......
I
I
J
0.2
o
500
\
l
\
\
\
/
520
540
560
Wavelength [nm]
5S0
\
\
"
600
I
620
3-24
40
50
NEe
NEe Electronics Inc.
SG215D/T
GREEN
GaP HIGH
INTENSITY LEDs
NEPOC SERIES
Description
Absolute Maximum Ratings
The SG215D and SG215T are medium-size plastic
resin-encapsulated LED lamps from which brilliant
green light is emitted uniformly and intensely in
proportion to the forward current (IF)' They are suitable
for use as bright and distinguishable illuminators or
indicators on the panels of audio/video equipment and
elsewhere.
TA = +25°C
Power Dissipation, PD
100mW
Forward Current, IF
40mA
Reverse Voltage, VR
5V
Junction Temperature, TJ
100'C
Storage Temperature, TsrG
-40'C to +100'C
Features
D
D
D
D
D
Electro·Optical Characteristics
High intensity
Bright red
Long lead
Lowcost
Compatible with integrated circuits
TA = +25°C
Umlts
Parameters
Applications
D
D
D
D
D
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
S,mbol
Min
Max
Unit
Test
Conditions
Forward Voltage
VF
2.0
2.5
V
IF = 10mA
Reverse Current
IR
0.01
10
p.A
VR = 4.5
Cr
60
pF
V = 0,
1= 1.0MHz
565
nm
IF = 10rriA
40
nm
IF = 1DmA
Capacitance
Peak EmiSSion
Wavelength
Package Dimensions
Typ
Spectral Line
Hall Width
A>'
Luminous
Intensity
IV
3
10
mcd
IF = 1DmA
IV
6
20
mcd
IF = 10mA
(SG215D)
rjJ3.0 ±O.2
(¢ 0.018)
Luminous
Intensity
(SG215T)
SG215D:
Green diffused
plastic lens
SG215T:
Pale green
clear plastic lens
2431.0
(0.945)
Package Dimensions
in Millimeters (Inches)
(Bottom View)
CD Anode
® Cathode
8a·Q00285A
3-25
II
tttlEC
SG215D/T
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
Forward Current
VI
30
20
l
V
40
i'..
'C
!
~
U
30
11
!
{l.
:c
""
.
~
..........
~
..........
of
"
10
o
40
20
/
/
u
"E
"
20
o
10
60
80
0.5
0.3
i
I
0.2
0.1
1.4
100
J
1.6
1
..&!~
...........
0.3
1
<
0.2
0.1
-40
-20
20
40
60
80
100
2.4
I
2.6
Relative Intensity vs Forward Current
-
0.5
2.2
Forward Voltage [V)
Relative Intensity VB Ambient Temperature
:---..... ...........
2.0
1.8
Ambient Temperature [DC]
1:
/'
Eo
E
~
E
I
Forward Voltage
50
50
/
/
/
I
120
/
10
20
Ambient Temperalure rOC]
30
I
40
50
Forward Current [rnA)
Spatial Distribution
Spectral Distribution
1.0
,f
0.8
+50"
-50'
I
1:
.~
0.6
~
i&!
-60'
-70'
+70 0
-80'
+80"
-90'
+90"
0.4
0.2
83·000288A
o
~
~
535
545
/
/
\
"" ;
lil
555
565
Wavelength [nm]
3-26
\
575
585
595
SR106C/D
RED
GaAsP LEDs
tt1EC
NEC Electronics Inc.
NEPOC SERIES
Description
Features
The SR106D and SR106C are GaAsP (Gallium Arsenide Phosphide) light emitting diodes which are
mounted on lead frames and molded in diffused red
and clear plastic, respectively. They are ideally suited
for front panel indicator applications
o
o
o
o
o
o
Applications
Package Dimensions
2.4 Max
(0.094 Max)
Small size
Lowcost
Bright
Easily assembled in arrays
Compatible with integrated circuits
Fast switching time
o
Package Dimensions In MIllimeters (Inches)
o
o
o
o
Visual displays
Dial indicators
Portable equipment indicators
Camera indicators
Desk-top calculator indicators
Absolute Maximum Ratings
TA = +25°C
Power Dissipation, Po
80mW
Forward Current, IF
40mA
Reverse Voltage, VR
3.0V
Junction Temperature, TJ
80"C
-30'C to +80°C
Storage Temperature, TSTG
Electro-Optical Characteristics
TA = +25°C
limits
SA106D:
Red diffused
plastic lens
SA106C:
Clear plastic
lens
Parameters
CD Anode
® Cathode
*Soldering conditions are at 260°C or less
within 5 sec. at 3mm or farther from the case.
83·000292A
Symbol
Min
Typ
Max
Unit
Test
Conditions
Forward Voltage
VF
1.6
2.0
V
'F = 20mA
Reverse Current
IR
0.01
50
/LA
VR = 3.0V
Cr
50
pF
V = 0,
1= 1.OMHz
APEAK
660
nm
IF = 20mA
Spectral Line
Hall Width
AA
35
nm
IF = 20mA
Luminous
IntenSity
IV
1.5
mcd
'F = 20mA
Capacitance
Peak Emission
Wavelength
3-27
II
t-iEC
SA106C/D
Typical Characteristics
TA = +25°C
Maximum Forward Current
VI
Ambient Temperature
Forward CUrrent VI Forward Voltage
60
40
50
I..
30
~
40
J
3D
<'
""
.3
E 20
=
E
~
..
oS
~
.~
10
o
o
20
.3
20
"!!
!
o!!
""-
40
10
"'"
80
60
I
o
100
J
o
1.5
1.0
0.5
2.0
Forward Voltaga [VI
Ambient Temperature [OC]
Relative Luminous Inlenslty VI Case Temperature
Relative Luminous Intensity vs Forward Current
10
f.
=
g
/
'E
.J
1
I
a:
0/
V
V
~
~°
10
30
40
I
50
0.5
.J
0.2
~
0.1
&!
20
-
2:
'"~
-
I---
0.05
0.02
0.01
-40
-20
20
40
60
80
100
120
I
140
Case Temperature [OC]
Forward Current [rnA]
Spatial Distribution
Spectral Distribution
1.0
f '\
II
0.8
f
i!
.5
.!!
\
I
I
S
.5 O.S
~
\
\
\
,
II
0.4
\
;;
~
/
0.2
o
S08
---
V
620
V
\
"-',-640
660
660
700
I
720
Wavelength [nm]
'3-28
_50"
"'50~
-60"
+SO'
_70"
+70'
-80"
... 80~
-90"
.1-90'"
NEe
NEe Electronics Inc.
SRS03C/D/W
RED
GaP HIGH
INTENSITY LEDs
NEPOC SERIES
Description
Features
The SR503D, SR503C and SR503W are full resinmolded LED lamps which emit brilliant red light at
comparatively low current. They are especially suitable
for electronic devices such as battery-driven equipment
and audio equipment requiring low-power displays.
o
o
o
o
o
o
Lowcost
High intensity with low current
Compatible with integrated circuits
Long lead
Wide view angle
Bright red
Applications
Package Dimensions
o
o
o
o
o
Clear
Visual displays
Guard systems
Radio and stereo equipment indicators
Measuring instruments, terminals
Optical switching light sources
Absolute Maximum Ratings
Plastic
Resin
TA = +25°C
0.8cm~~
Power Dissipation, PD
60mW
Forward Current, IF
30mA
5V
Reverse Vollage, VR
(0.031)
Part A: 1.04
Junction Temperature, TJ
(0.041)
100'C
-40'C to + 100'C
Storage Temperature, TSTG
PartB: 0.6
(0.024)
Electro·Optical Characteristics
TA = +25°C
Limits
Max
Unit
Reverse Current
2.0
0.01
2.5
10
/LA
VR = 4.5
Capacitance
100
pF
V = 0,
1= 1.0MHz
Peak Emission
Wavelength
695
nm
IF = 10mA
Spectral Line
Hall Width
100
nm
IF = 10mA
Forward Vollage
A: q,1.2 Max
($0.047 Max)
B:q,O.8 Max
($0.031 Max)
SR503D:
Red diffused
plastic lens
SR5Q3C:
Clear plastic lens
SR503W
White diffused
plastic lens
(Bottom View)
CD Anode
® Cathode
Package Dimensions In Millimeters (Inches)
83-0003048
3-29
Test
Conditions
Typ
Parameters
Symbol
Min
VF
V
IF = 10mA
Luminous
Intensity
(SR503D,
SR503W)
IV
1.5
5
mcd
IF = 10mA
Luminous
Intensity
(SR503C)
IV
4
10
mcd
IF
=
10mA
II
NEe
SR503C/D/W
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward Current vs Ambient Temperature
50
40
30
/
C
§. 30
10
C
"
~
"E 20
~
0
~
u.
E
~
E
~
<'
S
c
~
~
20
40
/
"E
..........
o
L
c3
10
o
~
of
~
60
I
80
100
0.3
0.2
I
0.1
1.4
J
1.6
r---.. I'-....
...........
Relative Intensity
0.5
8!
0.3
/
/
0.2
0.1
-40
20
-20
40
60
80
100
YS
2.6
o~
o
120
Ambient Temperature [OC]
L
Forward Current
-- --
~
-
.5
~=
2.4
Forward Voltage (V]
Relative Intensity vs Ambient Temperature
)
2.2
2.0
1.B
Ambient Temperature eel
~
....
./
20
~
/
10
20
30
I
40
Forward Current {rnA]
Spatial Distribution
Spectral Distribution
-10'
1.2
1.0
I"
I
II
"
'\
'\
I
o·
·10
-50'
'\.
\.
/
-60'
I\.
'\.
/
V
0.2
o
"
~
/
/"
640
_70'
<
660
680
700
720
740
........
I
760
Wavelength [nm]
3-30
_80'
-90' ......._-'---'--'---'--"-....::"""-=--'---'--"---'--"---'--' -1-90"
83·00Q302A
SRSOSC/D/W
RED
GaP HIGH
INTENSITY LEDs
ttiEC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SR505D, SR505C and SR505W are medium-size,
full resin-molded LED lamps which emit brilliant red
light at comparatively low current. They are especially
suitable for electronic devices such as battery-driven
equipment and audio equipment requiring low-power
displays.
o
o
o
o
Package Dimensions
cb 3.0 ± 0.2
(~
Lowcost
High intensity at low current
Compatible with integrated circuits
Bright red
Applications
o
o
o
o
o
Radio and stereo equipment indicators
Visual displays
Guard systems
Measuring instruments, terminals
Optical switching light sources
0.118)
Absolute Maximum Ratings
TA = +25°C
__."....=--+10'
Power Dissipation, PD
60mW
Forward Current, IF
30mA
Reverse Voltage, VR
5V
Junction Temperature, TJ
t
!
5.0
(0.197)
Storage Temperature, TSTG
SR5050:
-40°C to + 100°C
Red diffused
plastic lens
0.6 ± 0.1
SR505C:
Clear plastic lens
SR505W:
White diffused
plastic lens
(0.024)
Electro-Optical Characteristics
TA = +25°C
Limits
Parameters
Forward Voltage
ISIlIHll:IEJ-
CD Anode
® Cathode
100°C
(Bottom View)
Symbol
Min
VF
Max
Unit
2.0
2.5
V
0.01
10
Test
Conditions
IF = 10mA
/LA
VR = 4.5
50
pF
V = 0,
1= 1.0MHz
Peak Emission
Wavelength
695
nm
IF = 10mA
Spectral Line
Hall Width
100
nm
IF = 10mA
3.S
mcd
IF = 10mA
6
mcd
IF
Reverse Current
Capacitance
Package Dimens/ons In Millimeters (Inches)
Trp
CT
83·000303A
3-31
Luminous
Intensity
(SR505D,
SR505W)
IV
Luminous
Intensity
(SRSOSC)
IV
2
=
10mA
II
ttiEC
SR505C/D/W
'typical· Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward Current vs Ambient Temperature
50
40
30
20
"
g
30
10
~
~
a
~
!
0
u.
"
.
c
~
~
'"
10
o
o
20
40
I
U
E
I
II
~~
I'-..
60
I
100
BO
0.3
0.2
0.1
1.4
I
1.6
~
Id!
2.4
2.6
Relative Intensity vs Forward Current
--
,..-
I"--.
.......
0.5
2.2
2.0
1.B
Forward Voltage [V)
Relative Intensity va Ambient Temperature
I"--. '-...
I
I
Ambient Temperature [Oe]
f
./
.§.
1! 20
~
V
V
/
/'
f..---
/
0.3
L
0.2
o
0.1
-40
20
-20
40
60
80
100
120
Ambient Temperature laC]
I
V
o
10
20
30
40
Forward Current [mA]
Spatial Distribution
Spectral Distribution
+10
1.2
1.0
-i 0.8
~
~
0.6
i
0.4
I
""
~
/
V
'\.
-50'
'\.
j
0.2
o
I
\.
_60'
I\.
/
\.
_70'
I\.
<
'\
/
./
640
660
0
6BO
700
Wavelength [nm]
720
740
"
I
760
3-32
_80'
_90' LL---1_L..L---.l==t::::::~.~c::::::t::..L--1_L..L---1J +90'
B3-000305A
SR513C/D/W
RED
GaP HIGH
DINITEINISITY LEDs
tttfEC
NEe Electronics Inc.
NEPOC SERIES
Description
lFeatures
The SR513D, SR513C and SR513W are full resinmolded LED lamps which emit brilliant, uniform red light
at comparatively low current. They are especially suitable for electronic devices such as battery-driven and
audio equipment requiring low-power displays.
o
o
o
o
o
High intensity
Bright red
Long lead
Low cost
Compatible with integrated circuits
Applications
o
o
o
o
o
Package Dimensions
(/I 4.81: 0.3
(m 0.1BB)
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
1t-::;-::;U--____-.
dJ 4.6 :!: O.3
(
I
i
.
c
"'"
40
~
u
I
/
'l!
..........
!
ti.
r-....
60
I
80
100
0.3
0.2
I
I
0.1
1.4
1.8
1.6
2.2
2.0
2.4
Ambient Temperature lac]
forward Voltage [V]
Relative Intensity vs Ambient Temperature
Relative Intensity vs Forward Current
r--.... ...........
,.-
f
I
0.5
V
/
/'
2.6
-
f..--
/
0.3
/
V
o
0.2
o.1
-40
-20
20
40
60
80
100
o
120
Ambient Temperature [DC]
10
20
30
I
40
Forward Current [rnA]
Spatial Distribution
Spectral Distribution
1.2
1.0
.i
I
~
j
0.8
I
""'" "\"\
/
0.4
_50'
\.
I
0.6
'\.
-60'
"-
/
0.2
o
I
'\.
-70'
'-
/
./
640
660
660
700
Wavelength [nml
720
740
"
<
"'
~
~
-80'
+80"
-90' L-_.L_ _.L_ _.L=~_==--..L_ _..L_ _..L_..J +90'
83-000320A
760
3-34
!\fEe
SR603C/D/W
RED
GaAsP(N) HIGH
INTENSITY LEDs
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SR603D, SR603C and SR603W are full resinmolded LED lamps which emit brilliant, uniform red
light proportional to the forward current (IF). They are
especially suitable for electronic equipment in audio
applications which require bright, vivid displays.
D
D
D
D
Lowcost
High intensity
Compatible with integrated circuits
Long lead
o Wide view angle
D Bright red
Package Dimensions
Applications
D
D
D
D
D
Visual displays
Guard systems
Radio, stereo equipment indicators
Measuring instrument terminals
Optical switching light sources
Absolute Maximum Ratings
TA
= +25°C
Power Dissipation, po
.C:jjTU~~-i 5·L~---r-'I
(0~~1)
3 ± 0.5
50mA
Forward Current, IF
5V
Reverse Voltage, VR
0.65
(0.026)
Junction Temperature, TJ
0 1I8
(0.041)
Part A: 1.04
~
100mW
100'C
-40'C to +100'C
Storage Temperature, TSIG
i(2
4· MIn)
Part B: 0.S5
(0.025)
Electro.Optical Characteristics
(0.945 Min)
TA
= +25°C
Limits
Parameters
Forward Voltage
A:cf.t1.2Mox
(4)0.047 Max)
2 ± 0.5
(0.079)
Min
VF
Reverse Current
Capacitance
B: IPO.8 Max
(4)0.031 Max)
Peak Emission
Wavelength
SR603D:
Red diffused
plastic lens
Clear plastic lens
SR603W:
White diffused
plastic lens
CD Anode
® Cathode
Package Dimensions In Millimeters (Inches)
83-000345B
3-35
Typ
Max
2.0
2.4
V
0.01
10
p.A
Unit
Test
Conditions
= 10mA
= 4.5V
V = 0,
f = 1.0MHz
IF
VR
CI
100
pF
APEAK
630
nm
IF
= 10mA
40
nm
IF
= 10mA
=
Spectral Line
Hall Width
SRS03C:
(Bottom View)
Symbol
Luminous
Intensity
(SR603D,
SR603W)
IV
1.5
3
mcd
IF
Luminous
Intensity
(SR603C)
IV
4
6
mcd
IF = 10mA
10mA
II
ttlEC
SR603C/D/W
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward CUrrent va Ambient Temperature
80
50
50
20
" ""-
C
.s
"~
40
·u
1! 30
..
E
°E
~
10
C
.s
~
.........
-=
~
f
I'..
10
o
o
20
80
40
60
Ambient Temperature re]
Relative Intensity
VB
1
I
~
u
1!
" .........
20
E
:E
~
/'
I
100
/
0.5
I
I
0.2
0.1
1.4
I
ill
1.6
1.8
2.0
2.2
2A
2.6
Forward Voltage [V]
Relative Intensity VB Forward Current
Ambient Temperature
V
v
V
..........
............
./
t----.
,/
/
/
0.3
0.2
o.1
-40
-20
20
40
60
80
100
o
.120
./
o
V
./
10
20
30
40
I
50
Forward Current [mA1
Ambient Temperature [ee]
Spatial Distribution
Spectral Distribution
1.2
1.0
f!!
..
G
0.6
II:
0.4
i"ii
/
II
0.8
0.2
I
1/
I
"
1\
\
1\
'\
/
~
"-
V
.............
,/
600
620
840
880
680
-50'
·50
-60'
·60
-70'
.70'
I
-80'
·80'
iil
-90'
9
700
'90
BJ.OOO350A
Wavelength [nm]
3-36
ttt{EC
SR605C/D/W
RED
GaAsP(N) HIGH
INTENSITY LEDs
NEe Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
The SR605D, SR605C and SR605W are full resinmolded medium-size LED lamps which emit brilliant,
uniform red light proportional to the forward current
(IF). They are especially suitable for electronic
equipment in audio applications which require bright,
vivid displays.
Lowcost
High intensity
Compatible with integrated circuits
Bright red
CD Anode
® Cathode
-40'C to +100'C
+25°C
SR60SD:
Red diffused
plastic lens
SR60sC:
Clear plastic lens
SR60sW:
White diffused
plastic lens
Package Dimensions In Millimeters (Inches)
83·000351A
3-37
Symbol
Min
Test
Conditions
Typ
Max
Forward Voltage
2.0
2.4
V
IF = lOrnA
Reverse Current
0.01
10
/LA
VR = 4.5V
100
pF
V = 0,
1= 1.0MHz
Peak Emission
Wavelength
630
nm
IF = lOrnA
Spectral Line
Hall Width
40
nm
IF = lOrnA
Capacitance
_..",."",,--+10'
0.6 ± 0.1
(0.024)
=
Parameters
cb 3.0 ± 0.2
(¢ 0.118)
!
100'C
Limits
Package Dimensions
t
5V
Junction Temperature, TJ
Electro-Optical Characteristics
Visual displays
Guard systems
Radio and stereo equipment indicators
Measuring instrument terminals
Optical switching light sources
5.0
(0.197)
40mA
Reverse Voltage, VR
TA
Applications
D
D
D
.D
D
80mW
Forward Current, IF
Storage Temperature. TSTG
Features
D
D
D
D
TA = +25°C
Power Dissipation. Po
CT
Unit
Luminous
Intensity
(SR605D,
SR605W)
IV
1.5
5
mcd
IF = lOrnA
Luminous
Intensity
(SR605C)
IV
3
10
mcd
IF
=
lOrnA
II
ttiEC
SR605C/D/W
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward CUrrent VI Ambient Temperature
50
50
30
20
C'
40
'"
oS
I(l
30
1!
.~
0
oS
C
..........
§
.........
'"
~
10
o
20
40
7
1!
20
o
f
u
E
..:l!
10
C'
"
./
./
i!
{i.
"
0.5
0.3
0.2
0.1
1.4
100
80
60
I
I
1.6
1.8
2.0
2.4
2.2
2.6
Forward Voltage [V]
Ambient Temperature [Oe]
Relative Intensity vs Forward Current
Relative Intensity vs Ambient Temperature
V
1./
I'--- ..........
I
~
./
I'---
/
-
0.5
Ii!
0.3
/
./
/
0.2
0.1
-40
20
-20
40
60
80
Ambient Temperature
100
o
120
eel
l./
o
/
V
10
20
30
40
I
50
Forward Current {mAl
Spatial Distribution
Spectral Distribution
1.2
1.0
/
II
0.8
~
;;
I
0.6
iIi!
0.4
~
1\
I
II
580
I
+50"
-60'
+60 0
_70c
+70
0
-80'
+80
0
+90
0
I\,
\
I\.
V
./
600
-50<
\
J
0.2
o
"-
620
640
660
'"
.....680
I
700
Wavelength [nm]
3-38
_90'
83-000353A
t\'EC
SR613C/D/W
RED
GaAsP(N) HIGH
INTENSITY LEDs
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SR613D, SR613C and SR613W are full resinmolded LED lamps which emit brilliant, uniform red light
proportional to the forward current (IF). They are
especially suitable for electronic equipment in audio
applications which require bright, vivid displays. The
SR613C is especially suitable as a backlighting source.
D
D
D
D
D
cfJ 4.8::':: 0.3
(~
Applications
D
D
D
D
D
Package Dimensions
O.lBB)
High intensity
Bright red
Long lead
Lowcost
Compatible with intgrated circuits
4.6O.lBl)
± 0.31"::i-::;~_ _ _ _---.-(
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
Absolute Maximum Ratings
TA = +25°C
Power Dlsslpallon, Po
100mW
Forward Current, IF
SOmA
Reverse Voltage, VR
O.B
(0.031)
Part B: 0.6
(0.024)
SV
Junction Temperature, TJ
Part A: 1.05....
(0.041)
100'C
-40'C to +100'C
Storage Temperature, TSTG
24 Min
(0.945 Min)
Electro-Optical Characteristics
TA = +25°C
2 ± 0.5
(0.079)
Umits
Part A: ¢ 1.2 Max
(0.047)
Parameters
Part B: c/J O.B Max
(0.031)
CD Anode
® Cathode
(Bottom View)
SR613D:
Red diffused
plastic lens
SR613C:
Clear plastic lens
White diffused
plastic lens
83-000354A
Typ
Max
Unit
Test
Conditions
Forward Voltage
VF
2.0
2.4
V
IF - 10mA
IR
0.01
10
I-'A
VR = 4.SV
CT
100
pF
V = 0,
1= 1.0MHz
Peak Emission
Wavelength
630
nm
IF = 10mA
Spectral Line
Hall Width
40
nm
IF = 10mA
3
7
mcd
IF = 10mA
10
20
mcd
IF
Luminous
Intensity
(SR613D,
SR613W)
Luminous
Intensity
(SR613C)
3-39
Min
Reverse Current
Capacitance
Package Dimensions in Millimeters (Inches)
Symbol
IV
=
10mA
II
t-iEC
SR613C/D/W
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
Forward Current vs Forward Voltage
60
50
50
g
~
30
20
.......
C
"
40
d
"E 30
!a
g
c
11
u
!a
I'...
"-
10
20
40
/
"E
.........
o
L
~
.......
~
o
...--
C
.........
"E 20
I
~
10
60
I
80
100
0.5
0.3
0.2
I
I
/
0.1
1.4
1.8
1.6
2.0
2.2
2.4
Ambient Temperature [OC]
Forward Voltage [V]
Relative Intensity vs Ambient Temperature
Relative IntenSity VB Forward CUrrent
2.6
I"
/'
..........
f
/'
r--..... ..........
./
.5
!.l!
V
........
0.5
I"
0.3
0.2
0.1
/
/'
-40
-20
20
40
60
80
100
o
120
Ambient Temperature [OC]
k""
o
V
10
20
30
40
I
50
Forward Current [rnA]
Spatial Distribution
Spectral Distribution
1.2
1.0
~
~
I
II:
/
0.8
I
0.6
o
580
""" \
I
1/
0.4
0.2
/
\
,
1\
\
/
V
\.
./
600
620
640
660
:li
..... ""
680
~
700
Wavelength [om]
3-40
-50'
-50'
-60'
___ 60"
-70'
-1-70
0
-80'
+80
0
-90'
+90"
83·000356A
NEe
NEG Electronics Inc.
SR615C/D/W
RED
GaAsP(N) HIGH
INTENSITY LEDs
NEPOC SERIES
Description
Absolute Maximum Ratings
The SR615D, SR615C and SR615W are medium-size
plastic-resin-encapsulated LED lamps from which
brilliant red light is emitted uniformly and intensely in
proportion to the forward current (IF)' They are suitable
for use as bright, distinguishable illuminators or
indicators on the panels of audio-video equipment and
elsewhere.
TA = +25°C
Power Dissipation, PD
100mW
Forward Current, IF
40mA
SV
Reverse Voltage, VR
Junction Temperature, TJ
100'C
Storage Temperature, TSTG
-40°C to + 100'C
Features
o
o
o
o
o
High intensity
Bright red
Long lead
Lowcost
Compatible with integrated circuits
Electro.Optical Characteristics
TA = +25°C
Umits
Parameters
Applications
o
o
o
o
o
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
3.0 ± 0.2
($ 0.018)
SR615D:
Red diffused
plastic lans
SR615C:
Clear plastic lens
SR615W:
White diffused
plastic lens
24 ± 1.0
(0.945)
Package Dimensions
In Millimeters (Inches)
(Bottom View)
CD Anode
® Cathode
83-000357A
3-41
Max
Unit
Test
Conditions
VF
2.0
2.S
V
IF = 10mA
Reverse Current
IR
0.01
10
J.'A
VR = 4.SV
CT
100
pF
V = 0,
f = 1.OMHz
APEAK
630
nm
IF = 10mA
Spectral Line
Half Width
dA
40
nm
IF = 10mA
Luminous
Intensity
(SR61SD,
SR61SW)
Iv
3
8
mcd
IF = 10mA
Luminous
Intensity
(SR61SC)
IV
6
16
mcd
IF
Peak Emission
Wavelength
(j.J
Typ
Forward Voltage
Capacitance
Package Dimensions
Symbol Min
=
10mA
II
t-fEC
SR615C/D/W
Typical Characteristics
TA = +25°C
Maximum Forward .Current ,VI Amblant Temperature
Forward Current VB Forward Voltage
0
C
S
..
~
U
50
30
20
40
"
'"
30
'l!
j
:c
.s
.........
~
:!i!
J
"
0
E
..
20
40
60
80
/
!
11.
I
100
--
/
'l!
""
10
0
~
10
0.5
0.3
0.2
I
0.1
1.4
1
1.8
1.6
Ambient Temperature [DC]
2.0
2.4
2.2
I
2.6
Forward Voltage [V]
Relative Intensity vs Forward Current
Relative Intensity vs Ambient Temperature
/
/'
r--.... r---..
~
,
'2
/'
./
............
i
.!!
;;,
V
........
0.5
V
0.3
0.2
0.1
/
-40
-20
20
40
60
80
100
i
120
o
L
o
/'
/'
10
20
30
Forward Current [rnA]
AmbIent Temperature [DC]
Spatial Distribution
83-Q00358A
3-42
40
I
50
SY403DA/TA
AMBER
GaAsP(N) HIGH
INTENSITY LEDs
ftiEC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SY403DA and SY403TA are full resin-molded
lamps which emit bright, vivid amber light. They are
especially suitable for electronic equipment in audio
applications which require high-brightness displays.
o
o
o
o
o
o
Package Dimensions
High intensity
Wide angle
Long lead
Good sensitivity-590nm
Lowcost
Compatible and intgrated circuits
Applications
SV403DA:
Amber diffused
plastic lens
SV403TA:
Amber clear
plastic lens
o
o
o
o
o
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
Absolute Maximum Ratings
TA = +25°C
Power Dissipation, Po
0.8CW~~
100mW
Forward Current, tF
(0.031)
40mA
Reverse Voltage, VA
Part A: 1.04
(0.041)
5V
Junction Temperature, TJ
100°C
Storage Temperature, TSTG
Part B: 0.65
(0.025)
-40°C to + 100°C
Electro.Optical Characteristics
TA = +25°C
Limits
Parameters
A:IjI1.2 Max
Max)
2 ± 0.5
(~0.047
(0.079)
B: cfJO.8 Max
Max)
(~0.031
(Bottom View)
Package Dimensions in Millimeters (Inches)
83-0003628
3-43
Min
Typ
Max
Unit
Test
Conditions
Forward Voltage
VF
2.1
2.5
V
IF = 10mA
Reverse Current
tA
0.01
10
/LA
VA = 4.5V
CT
60
pF
V = 0,
f = 1.0MHz
Peak Emission
Wavelength
590
nm
IF = 10mA
Spectral Line
Hall Width
40
nm
IF = 10mA
Capacitance
CD Anode
® Cathode
Symbot
Luminous
Intensity
SR403DA)
IV
2
5
mcd
IF = 10mA
Luminous
Intensity
(SR403TA)
IV
5
10
mcd
IF = 10mA
II
~EC
SY403DA/TA
Typical Characteristics
TA = +25°C
Forward
Maximum Forward Current VI AmbJent Temperature
Cu~rent
va Forward Voltage
50
50
17
30
:c
40
',,-
oS
~
3
0
oS
30
1:
~
"-
20
!
If
"
10
o
40
20
/
1!
.........
x
o
I
~
........
u
!iE
:l!
/'
10
:c
.......
1!
!
...
~
20
i
0.3
I
0.2
I
0.1
1.4
100
80
60
0.5
2.2
2.0
1.8
1.6
2.4
Forward Voltage (V]
Ambient Temperature rOC]
Relative Inlenslty vs Forward Current
Relative Intensity vs Ambient Temperature
7
/
2
..........
;.~
/
...........
:§
i&!
r--...
f
-
0.5
0.3
/
ItJ.
/
7
/
1/
1
V
./
0.2
0.1
/
-40
-20
20
40
80
80
100
o
o
120
Ambient Temperature rOC]
......-
I
/'
10
20
30
40
50
Forward Current [rnA]
Spatial Distribution
Spectral Distribution
0'
1.2
1.0
t
I 1\
I \
I
0.8
j
.E 0.6
\
G
>
~
II:
-SO'
0.4
I
0.2
-60'
\
I\.
-70'
"- ..........
/
560
i
l'""'- t-- g
-I-'"
540
580
+50"
600
620
640
660
-80'
-SO'
U_L-L-.J._C::t::::::~~:r::::::::1:::L-L.!..::':::::'..lJ +90'
83-000365'&'
Wavelength [nm]
3-44
t-{EC
SY405D/T
AMBER
GaAsP(N) HIGH
INTENSITY LEDs
NEe Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25°C
The SY405D and SY405T are GaAsP & Gallium Arsenide Phosphide) light emitting diodes which are
mounted on lead frames and molded in diffused amber
and clear amber plastic, respectively. They are ideally
suited for front panel indicator applications.
Forward Current, IF
40mA
Reverse Voltage, VR
5V
80'C
Junction Temperature, TJ
Features
Storage Temperalure, TSTG
o
o
o
o
o
o
o
TA=+25°C
Good sensitivity-590nm
Long life-solid state reliability
Lowcost
High intensity with low current
Versatile mounting on PC board or panel
Compatible with integrated circuits
Fast switching time
-30'C to +80'C
IElectro·Optical Characteristics
Limits
Parameters
Applications
Forward Voltage
o
o
o
Reverse Current
o
100mW
Power Dissipation, PD
Visual displays
Guard systems
Radio and stereo equipment indicators
Measuring instruments, terminals
Capacitance
Package !Dimensions
Symbol
VF
Min
Typ
Max
2.2
2.5
V
0.01
50
p.A
Unit
Test
Conditions
= 10mA
= 4.5
V = 0,
f = 1.0MHz
IF
VR
60
pF
Peak Emission
Wavelength
590
nm
IF
= 10mA
Spectral Line
Half Width
35
nm
IF
= 10mA
mcd
IF
= 10mA
Luminous
Intensity
CT
Note: 1. IV1/IV2: Luminous intensity of SY 405Dlluminous intensity
of SY405T.
~.....=.-+1(l"
t
5.0
(0.197)
t
:;~~_. -uJT"'
=J=w.
2.54
r')~_
f 35
/1
(d: '0.1"38) \
CD Anode
® Cathode
..
"..
®
(0.079)
.
(Bottom View)
....~~
Package Dimensions in Millimeters (Inches)
83-000366A
3-45
II
tt.'EC
SY405D/T
Typical Characteristics
TA=+25°C
Maximum Forward Current vs Ambient Temperature
1
~
60
50
50
C'
40
~
U
'l! 30
J
E 20
~
I
Forward Current VI Forward Voltage
60
.§.
C
~
~
10
0
20
40
40
a 30
'l!
~
of
"""60
"'"
80
20
/
10
i
o
100
o
1.5
0.5
Ambient Temperature [OC]
/
10
20
~
.!!
0.4
40
I
3.5
i
o
50
540
/ "\.
\
\
I
I
J
-50'
_60'
+70
-70'
0
_80'
Ll_L-.l_C:1==:E~~1I~2:t:j::::::--L--.JL...L_U +90
0
83-000367A
3-46
\
'\.
"' ......
/
..,.,, /
560
580
600
Wavelength [nrn]
0"
\
\
/
0.2
Spatial Distribution
_90"
~
0.6
~
ol!
Forward Current [rnA]
-10"
I
0.8
/
30
2.5
Spectral Dlstrfbutlon
1.0
/
./
Forward Voltage [V]
Relative Intensity vs Forward CUrrent
V
/
/
620
I
640
ttt{EC
SY406D/T
AMBER
GaAs LEDs
NEG Electronics Inc.
NEPOC SERIES
Description
Features
The SY406D and SY406T are GaAsP (Gallium Arsenide
Phosphide) light emitting diodes which are mounted on
lead frames and molded in diffused amber and clear
amber plastic, respectively. They are ideally suited for
front panel indicator applications.
o
o
o
o
o
o
Package Dimensions
Applications
2.4 Max
(0.094 Max)
Package Dimensions In Millimeters (Inches)
o
o
o
o
o
Good sensitivity - 590nm
Small size
Bright
Easily assembled in arrays
Compatible with integrated circuits
Fast switching time
Visual displays
Panel indicators
Desk top calculator indicators
Portable equipment indicators
Camera indicators
Absolute Maximum Ratings
TA
=
+25°C
Power Dissipation, Po
100mW
Forward Current, IF
40mA
5V
Reverse Voltage, VR
-+---+
Junction Temperature, TJ
22.0 Min
80'C
(0.8SS M;n)
-30'C to +80'C
Storage Temperature, T5TG
Electro-Optical Characteristics
TA
=
+25°C
Limits
SV40SD:
Amber diffused
plastic lens
Parameters
CD Anode
® Cathode
SV40ST:
Amber clear
plastic lens
·Soldering conditions are at 260 C or less
within 5 sec. at 3mm or farther from the case.
Q
Symbol
Min
Unit
Test
Conditions
VF
2.2
2.5
V
IF = 20mA
Reverse Current
IR
0.01
50
pA
VR = 4.5V
60
pF
V = 0,
1= 1.0MHz
590
nm
IF = 10mA
Spectral Line
Hall Width
35
nm
IF = 10mA
Luminous
Intensity
214
mcd
IF = 10mA
Peak Emission
Wavelength
APEAK
"IV1/IV2: Luminous
SY406T.
3-47
Max
Forward Voltage
Capacitance
8J'OOO370A
Typ
Intensity
of
SY406D/Luminous
Intensity
of
II
ttiEC
SY406D/T
Typical Characteristics
TA = +25°C
Maximum Forward Current va Ambient Temperature
C
Forward Current vs Forward Voltage
60
60
50
50
oS
C
~
C
40
'"
1! 3D
!
I",
t1.
E 2D
~
E
I
10
o
o
20
oS
~
il
I
3D
1!
"'-
!
t1.
"-
so
40
40
'"
80
I
2D
/
10
o
o
100
./
0.5
1.5
Ambient Temperature [DC]
/
V
10
"'~"
I
3D
40
I
50
\
I
0.4
0.2
o
540
...... V
560
/
/
V
I
+10"
3-48
\
\
\
"
'i'.
580
600
Wavelength [nm]
Spatial Distribution
00
r\
0.6
a:
Forward Current [rnA]
-10"
/ "\.
/
II
0.8
V
20
3.5
Spectral Distribution
1.0
/
2.5
Forward Voltage [V]
Relative Intensity vs Forward Current
1
/
620
I
640
SY413D/T
AMBER
GaAsPHIGH
INTENSITY LEDs
ttlEC
NEC Electronics Inc.
NEPOC SERIES
Description
Features
The SY413D and SY413T are full resin-molded LED
lamps which emit bright, brilliant, uniform amber light
proportional to the forward current (IF). They are especially suitable for electronic equipment which require
bright, vivid displays. The SY413T is especially suitable
as a backlighting source.
o
o
o
o
o
Applications
o
o
o
Package Dimensions
o
o
(/l4.8 ;!:; 0.3
(./.0.188)
High intensity
Bright amber
Long lead
Lowcost
Compatible with integrated circuits
I
./.4.6, 0.3'1r'::::;~~_ _
(./.0.181)
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
Absolute Maximum Ratings
TA = +25°C
8.5, 0.5
(0.335)
0.8
(0.031)
Power Dissipation, Po
t;!±tI~=f:.....,~--t-
40mA
Reverse Voltage, VR
5V
Junction Temperature, TJ
Part A: 1.05.....
(0.041)
Part B: 0.6--+
(0.024)
100mW
Forward Current, IF
24 In
(0.945 Min)
2,0.5
(0.079)
Electro·Optical Characteristics
B
Part A: If, 1.2 Max
(0.047)
100'C
-40'C to +100'C
Storage Temperature, TSTG
TA = +25°C
Part B: Ib 0.8 Max
(0.031)
5.6
Umits
=t13-/-~
+
t
'~- _/
!
CD Anode
® Cathode
SY413D:
Amber diffused
plastic lens
SY413T:
Parameters
Pale amber clear
plastic lens
0.3
(0.220)
(BoHom View)
Max
Forward Voltage
2.0
2.5
V
IF = 10mA
Reverse Current
0.01
10
J.LA
VR = 4.5V
60
pF
V = 0,
/ = 1.0MHz
Peak Emission
Wavelength
590
nm
IF = 10mA
Spectral Line
Hal/Width
40
nm
IF = 10mA
Capacitance
\
Package Dimensions in Millimeters (Inches)
83-000372A
3-49
Test
Conditions
Trp
S,mbol
Min
CT
Unit
Luminous
Intensity
(SY413D)
IV
4
10
mcd
IF = 10mA
Luminous
Intensity
(SY413T)
IV
12
30
mcd
IF = 10mA
II
NEe
SY413D/T
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
Forward Current vs Forward Voltage
50
:c
50
30
20
oS
I
U
r---.
30
C
"-
c
..........
~
~~
u
..........
20
~
.........
0
IL
0.5
..........
10
o
o
40
20
/
'l!
E
~
E
I
10
.s
'l!
0
IL
./
V
40
i
00
60
100
0.3
0.2
I
0.1
1.4
1
1.6
1.8
r..... ~
1r
1
2.2
2.4
I
2.6
Relative Intensity vs Forward Current
Relative Intensity vs Ambient Temperature
z-
2.0
Forward Voltage [V)
Ambient Temperature ["C]
V
r.....
./
,/
~ 0.5
V
./
&!
0.3
0.2
o.1
1
-40
-20
20
40
00
00
100
o
o
120
Ambient Temperature 1°C]
V
./
V
10
20
30
40
I
50
Forward Current [mAl
Spatial Distribution
Spectral Distribution
1.2
1.0
Z;;
r \.
I
0.8
II
II
!
S 0.6
f
0:
0.4
/
0.2
\
_50'
\
I
\.
560
500
_70'
"- ..........
...., ......
540
-60'
\
600
620
<
1b
r-- I--- 16~
640
660
~oo'
-00'
_90' L-__~____~____~~~~~~-L____-L____-L__-J+90'
B3·QOO284A
Wavelength [nm]
3-50
ftt{EC
SY415D/T
AMBER
GaAsPHIGH
INTENSITY LEDs
NEC Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
The SY415D and SY415T are medium-size plastic resinencapsulated LED lamps which emit brilliant amber light
uniformly and intensely in proportion to the forward current (IF). They are suitable as bright, distinguishable illuminators or indicators on the panels of audio/video
equipment and elsewhere.
TA = +25°C
Power DiSSipation, Po
100mW
40mA
Forward Current, IF
5V
Reverse Vollage, VR
Junction Temperature, TJ
100"C
-40"C to + 100"C
Storage Temperature, T5TG
Features
o
o
o
o
o
High intensity
Bright amber
Long lead
Lowcost
Compatible with integrated circuits
Electro·Optical Characteristics
TA
+25°C
Limits
Parameters
Applications
o
o
o
o
o
=
Max
2.0
2.5
V
IF = 10mA
0.01
10
,..A
VR = 4.5V
60
pF
V = 0,
1= 1.0MHz
Peak Emission
Wavelength
590
nm
IF = 10mA
Spectral Line
Hall Width
40
nm
IF = 10mA
VF
Reverse Current
Capacitance
Package Dimensions
cb3.0 ±O.2
(¢ 0.018)
SY415D:
Amber diffused
plastic lens
SY415T:
Pale amber
clear plastic lens
Package Dimensions
In Millimeters (Inches)
(Bottom View)
Min
CD Anode
® Cathode
83-000376A
3-51
Test
Conditions
Typ
Forward Voltage
Visual displays
Guard systems
Mobile equipment indicators
Stereo equipment indicators
Transceiver indicators
Symbol
C1
Unit
Luminous
Intensity
(SY415Dj
IV
4
10
mcd
IF
Luminous
Inlensity
(SY415Tj
IV
7
20
mcd
IF = 10mA
=
10mA
II
t-iEC
SY415D/T
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
Forward Current
50
40
'~
!
!
30
>
1!
!
.
If
1!
.........
~
20
/
0,5
0,3
0,2
o
20
40
80
60
0,1
1,4
100
............
-
0.3
1
~
0.2
-20
2.2
20
40
60
80
100
/
/
10
120
20
Ambient Temperature rOC]
2.6
2A
Relative Intenslly va Forward Currenl
0.5
-40
2,0
1.8
Relative Intensity VB Ambient Temperature
s
0.1
1,6
Forward Voltage [V]
r----. ............
I
I
II
Ambient Temperature rOC)
=
~
ol!
J
...........
10
~
!!
/
a
1!
..........
E
E
~
V
10
CO
.........
o
".,
!
'II
:l!
Forward Voltage
,...
30
20
CO
VI
50
/
30
40
50
Forward Current [rnA]
Spatial Distribution
Spectral Dlstrfbutlon
1,0
I
0.8
0
+60
0
+70
·70"
,\
~
!!
"ol!
+80
·90"
0.4
/
0
0
+90"
B3·QOO377A
~
J
0.2
·80"
r-..
~ 0.6
~
60"
'" \
~
+50
·50"
I
I
o
540
.....V
560
/
I
\
\
'\.
/
.......
580
600
Wavelength [nm]
3-52
620
I
640
NEe
FASHION LEDs
4-1
II
NEe
FASHION LEDs
Section 4 - Fashion LEDs
SG231 D (Green) GaP Fashion LED ................................................... 4-3
SG232D (Green) GaP Fashion LED .................................................. 4-5
SG233D, SY433D, SR533D (Green, Amber, Red) Fashion LEDs ......................... 4-7
SG235D, SY435D, SR535D (Green, Amber, Red) Fashion LEDs ......................... 4-9
SG236D, SY436D, SR536D (Green, Amber, Red) Fashion LEDs ........................ 4-11
SG237D, SY437D, SR537D (Green, Amber, Red) Fashion LEDs ........................ 4-13
SG238D (Green) Fashion LED ...................................................... 4-15
SG239D, SY439D, SR539D (Green, Amber, Red) Fashion LEDs ........................ 4-17
SG240D, SY440D, SR540D (Green, Amber, Red) Fashion LEDs ........................ 4-19
SG261D, SY461D, SR661D (Green, Amber, Red) Fashion LEDs ........................ 4-21
SR531D (Red) Fashion LED ........................................................ 4-23
SR538D (Red) Fashion LED ........................................................ 4-25
SR632D (Red) GaAsP(N) Fashion LED .............................................. 4-27
SY431D (Amber) GaAsP Fashion LED ............................................... 4-29
SY432D (Amber) Fashion LED ...................................................... 4-31
SY438D (Amber) Fashion LED ...................................................... 4-33
4-2
NEe
NEe Electronics Inc.
SG231D
GREEN
GaP FASHION LED
NEPOC SERIES
Description
Features
o
The SG231D is a full resin-molded LED lamp with a flat
rectangular face which uniformly emits brilliant green
light. It is especially suitable for electronic equipment in
audio applications which require fancy displays.
o
o
o
o
Package Dimensions
Applications
@
5G2310:
Green diHused
plastic len9
o
o
o
¢ 5.48
Visual displays
Radio and stereo equipment indicators
Measuring instruments, terminals
Absolute Maximum Ratings
(¢ 0.216)
¢5
(¢ 0.197)
Flat circular face
Low cost
Long lead
Bright green
Compatible with integrated circuits
Red (SR531D) and amber (SY431D) LEOs are
available in the same package
o
TA=+25°C
¢ 4.9
1I1+----HI (¢ 0.193)
Power Dissipation, Po
~!·g.:9~i1.J\1--I4--~
100mW
Forward Current, IF
se
40mA
Reverse Voltage, VR
5V
Junction Temperature, TJ
100°C
-40°C to +100°C
Storage Temperature, TSTG
Electro:Optical Characteristics
TA = +25°C
0.85
(0.033)
Limits
Parameters
Symbol
Min
Typ
Max
Unit
Forward Voltage
VF
2.0
2.5
V
IF = 10mA
Reverse Current
IR
0.01
10
/LA
VR = 4.5V
CT
60
pF
V = 0,
f = 1.0MHz
~PEAK
565
nm
IF = 10mA
Spectral Line
Half Width
I\.~
35
nm
IF = 10mA
Luminous
Intensity
Iv
0.3
mcd
IF = 10mA
25 Min
(0.984 Min)
Capacitance
Part B: 0.65
(0.025)
Peak Emission
Wavelength
Part A: ,p 1.2 Max
(¢ 0.047 Max)
Part B: r/J 0.8 Max
(¢ 0.031 Max)
CD Anode
® Cathode
Package Dimensions In Millimeters (Inches)
83.()[)Q289A
4-3
Test
Conditions
0.1
II
ttt{EC
SG231D
Typical Characteristics
TA = +25°C
Maximum Forward C'urrent 'IS Ambient Temperature
Forward Current 'IS Forward Vollage
50
50
30
./
20
C
';-..
oS
I
0
.
10
"
30
'Ii!
1
1
.........
!1
...
/
40
I
o
""'"
20
E
..
~
""
~ 10
o
o
20
40
1
';-..
60
II
I
100
80
0.3
0.2
o.1
1.4
I
1.6
2.2
2.0
1.8
Ambient Te"'!peralure rOC]
2.4
2.6
forward Voltage [V]
Relative Intensity 'IS Forward CUrrent
Relative Intensity vs Ambient Temperature
/
L
i'- ...........
~
~
i
..
~
/
/
b-.
/
/
0.5
~
0.3
/'
0.2
0.1
~40
~20
20
40
60
80
100
o .........
o
120
Ambient Temperature rOC]
Spectral Distribution
1.0
~
0.8
I
I
~
~
0.6
I
I
I
0;
a: 0.4
500
\
\
\
0.2
o
\
\
\
/
\
f\
520
540
560
/
./
10
20
30
Forward Current [rnA]
1.2
.~
V
/
580
600
I
620
Wavelength [nm]
4-4
40
50
SG232D
GREEN
GaP FASHION LED
tttfEC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SG2320 is a full resin-molded LEO lamp with a flat
rectangular face which uniformly emits brilliant green
light. It is especially suitable for electronic equipment in
audio applications which require fancy displays.
o
o
o
o
o
o
Package Dimensions
Flat rectangular face
Lowcost
Long lead
Bright green
Compatible with integrated circuits
Red (SR6320) and amber (SY4320) LEOs are
available in the same package style
Applications
o
o
o
o
SG232D:
Green Diffused
Plastic lens.
Absolute Maximum Ratings
TA = +25°C
~
10
Visual displays
Peak level indicators
Radio and stereo equipment indicators
Measuring instruments, terminals
100mW
Power Dissipation, Po
(0.354)
(O'r
Forward Current, IF
40mA
Reverse Voltage. VR
5V
100'C
Junction Temperature, TJ
0.85
!
-40 to +100'C
Storage Temperature, T5TO
Part A:(0.033~)
1.04 -uJ~LI~#0.158)
(0.041)
25 Min
(0.984 Min)
1
(0.039)
65
(0.024)
0.
t
Electro·Optical Characteristics
TA = +25°C
Limits
Parameters
Part A:
rP 1.2 Max
(4)1.2 Max)
Part B: cI> 0.8 Max
(4) 0.031 Max)
Package Dimensions
In MIllimeters (Inches)
CD Anode
® Cathode
4-5
Min
Typ
Max
Unit
Test
Conditions
= 10mA
Forward Voltage
VF
2.0
2.5
V
Reverse Current
IR
0.01
10
fJ-A
CT
100
pF
Peak Emission
Wavelength
APEAK
565
nm
IF
= 10mA
Spectral Line
Hall Width
IH
40
nm
'F
= 10mA
Luminous
Intensity
Iv
0.5
mcd
IF
= 10mA
Capacitance
83-00029OA
Symbol
0.2
IF
vR = 4.5V
V = O.
= 1.0MHz
f
II
NEe
SG232D
Typical Characteristics
TA = +25°C
Maximum Forward CUrrent va Ambient Temperature
Forward Current vs Forward Voltage
50
50
3D
20
C'
40
'r-..
S
~
~
u
10
C'
oS
.........
30
..g
0
.
c
.........
1!
!
""-
20
o
40
20
...........
~
1
I
60
II
1!
"" "
10
o
/
~
u
~
:;!
!
of
0.3
0.2
100
80
I
I
0.1
1.4
1.6
1.8
Relative Intensity vs Ambient Temperature
Relative Inlenslly vs Forward Current
7
r-.... .............
/
0.3
-40
-20
20
40
60
80
100
I
120
Spectral Distribution
1.2
1.0
I
~ 0.8
I
I
I
I
II
0.6
.!!!
~
0·4
o. 2
0
SOD
/
17
/
1,/
Ambient Temperature [OC]
~
'/
2.6
/
0.2
~
2.4
Forward Voltage [Vj
0.5
0.1
2.2
2.0
Ambient Temperature [OC]
.5
I
7'
V
1\
\
\
\
1\
\
\
/
520
540
1\
560
580
600
I
620
Wavelength [nm]
4-6
o
o
-
../
V
./
./
10
20
30
Forward Current [mAl
40
I
50
NEe
NEe Electronics Inc.
SG233D,SY433D,SR533D
GREEN, AMBER, RED
FASHION LEDs
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25°C
These three LEOs are full resin-molded LED lamps and
have flat triangular faces which uniformly emit brilliant
red, green and amber light. They are especially suitable
for electronic equipment in audio applications which
require fancy displays.
30/40mA
5V
Reverse Voltage, VR
100'C
Junction Temperature, TJ
lFeatures
o
o
o
o
o
60/100mW
Power Dissipation, PDl
Forward Current, IFl
-40'C to +100'C
Storage Temperature, TSTG
Flat triangular face
Lowcost
Long lead
Bright red, green or amber
Compatible with integrated circuits
Note: 1. SR533D/SG233D, SY433D.
Electro-Optical Characteristics
TA = +25°C
Limits
Applications
o
o
o
o
Parameters
Visual displays
Radio and stereo equipment indicators
Measuring instrument terminals
Direction indicators
Forward Voltage
8R5330
8G2330
Symbol
Min
Max
Unit
VF
2.0
2.5
V
VF
2.0
2.5
V
IF
2.0
2.4
V
IF = 10mA
0.01
10
8Y4330
Package Dimensions
Reverse CUReot
8R5330
...
t
3.6 ± 0.2 4.0
fIoE:-r---/t
(0.158)
~....:::::..II.J
(0.158)
t
8G2330
0.01
10
8Y4330
0.01
10
8R5330
100
pF
8G2330
100
pF
SY4330
60
pF
3 _--II+-~I+--+l__ 2.4
(0.118)
5.4 (0.094)
(0.197)·1;:=~!l~
(0.213)
SR5330:
Red plastic
package
SG2330:
Peak Emission
Wavelength
SR5330
'-"'r
,
I
Green plastic
package
SY433D:
Amber plastic
package
IF = 10mA
=
10mA
Capacitance
(O~;~O) -H+-.J--I-(O~D~7)
5 ± 0.2
Test
Conditions
Typ
:
I
I
I
I
V = 0,
f = 1.0MHz
V = 0,
f = 1.0MHz
V = 0,
f = 1.0MHz
695
nm
IF = 10mA
8G2330
565
nm
IF = 10mA
8Y4330
590
nm
IF = 10mA
APEAK
I
Part A: 1.05
Spectral Une
Half Width
8R5330
(0.041)
Part B: 0.6
(0.024)
Part A:
(~
rb 1.2 Max
0.047 Max)
Part B: ¢ 0.8 Max
(~
0.031 Max)
CD Anode
® Cathode
Package Dimensions In Millimeters (Inches)
83"()00312A
4-7
100
nm
IF = 10mA
8Y2330
40
nm
IF = 10mA
8R4330
40
nm
IF = 10mA
Luminous
Intensity
8R5330
IV
0.2
0.5
mcd
IF
SG2330
IV
0.2
0.7
mcd
IF = 10mA
8Y4330
IV
0.2
0.7
mcd
IF = 10mA
=
10mA
II
ttlEC
-SG233D, SY433D, SR533D
Typical Characteristics
TA = +25°C
Maximum Forward Current 'IS Ambient Temperature
Forward Current 'IS Forward Voltage
50
50
~
30
1'10
~
..... ~ SG233D, SY433D
30
r-.....
I
SR533D/
{l
20
§
J
10
.........
0
t'....
u
l!
20
SG233D
~~
.........
40
/I
fI
~
............ .........
10
o
~~R533D
Eo
........
o
SY433D "-.,..
C-
........
il
.//
20
{l
0
0.5
!
BO
60
0.3
1
0.2
II
0.1
100
1.4
I.B
1.6
2.2
2.0
2.4
Ambient Temperature [lie]
Forward Voltage [V]
Relative Intensity VI Ambient Temperature
Relative Intensity VB Forward Current
2.6
5
3
SRS33D
r--.. r--....
1
j.-~
f
r--...
V
r
V
O.3
L
O. 2
V"
/
/
V
O.1
-40
20
-20
40
60
BO
100
o
o
120
Ambient Temperature ["C]
/
V
V
/
SG233D
SY433D
/
/
/
./
/
/
o ./
o
V
10
./
20
30
20
Forward Current [rnA]
RelatiVe Intensity vs Forward Current
L
10
40
I
50
Forward Current [mAl
4-8
30
I
40
NEe
NEG Electronics Inc.
SG235D,SY435D,SR535D
GREEN, AMBER, RED
FASHION LEDs
NEPCO SERIES
Absolute Maximum Ratings
TA = +25°C
Description
These three LEDs are full resin-molded LED lamps with
flat rectangular faces which uniformly emit brilliant red,
green and amber light. They are especially suitable for
electronic equipment in audio applications which require
fancy displays.
Power Dissipation, POl
60/100mW
Forward Current, IFl
30/40mA
Reverse Voltage, VA
5V
Junction Temperature, TJ
Features
Storage Temperature, TSTG
D
D
D
D
D
Note: 1. SR535D/SG235D, SY435D
Flat rectangular face
Lowcost
Long lead
Bright red, green or amber
Compatible with integrated circuits
Electro-Optical Characteristics
TA = +25°C
Limits
Applications
Parameters
D Visual displays
D Radio and stereo equipment indicators
D Measuring instrument terminals
Forward Voltage
8R535D
8G235D
Symbol
Min
SR535D:
Red plastic
package
SG235D:
Green plastic
package
2.0
2.5
V
IF = 10mA
2.0
2.5
V
IF
2.0
2.4
V
IF = 10mA
n
10mA
0.01
10
VA = 4.5V
8G235D
0.01
10
VA = 4.5V
8Y435D
0.01
10
VR = 4.5V
SR535D
1 ± 0.2
(0.039)
Cr
SG235D
SY435D
10 ± 0.3
(0.394)
Peak Emission
Wavelength
8R535D
0.85
(0.033)
Part B: 0.6
Cr
2
(0.079)
Package Dimensions
in Millimeters (Inches)
83-000313A
4-9
100
pF
60
pF
V = 0,
= 1.0MHz
f
V = 0,
= 1.0MHz
f
V = 0,
= 1.0MHz
f
695
nm
IF = 10mA
ApEAK
565
nm
IF = 10mA
8Y435D
ApEAK
590
nm
IF = 10mA
Ill.
100
nm
IF
SY235D
Ill.
40
nm
IF = 10mA
8R435D
Ill.
40
nm
IF = 10mA
=
10mA
Luminous
Intensity
8R535D
IV
0.2
0.5
mcd
IF = 10mA
8G235D
IV
0.2
0.7
mcd
IF = 10mA
8Y435D
IV
0.2
0.7
mcd
IF
(¢ 0.047 Max)
Part B: r:P 0.8 Max
(¢ 0.031 Max)
pF
ApEAK
(0.024)
CD Anode
® Cathode
100
8G235D
Spectral Line
Hall Width
8R535D
Part A: 1.05
(0.041)
Part A: $ 1.2 Max
=
Capacitance
5
$V435D:
Amber plastic
package
Test
Conditions
Unit
VF
Reverse Current
8R535D .
3
(0.118)
Max
VF
8Y435D
Package Dimensions
Typ
=
10mA
II
t-iEC
SG235D, SY435D, SR535D
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
Forward Current vs Forward Voltage
50
50
LlL:
30
20
!
40
........
. , - SG295D, SY435D
C
30
i&
.
E
J
§
I'-....
/I
CJ
..........
11/
"!!
!
""""~"
...........
10
o
o
SG235D
c
..........
SR535D/
&
0.5
0.3
0.2
I.
0.1
40
20
~'SR535D
i
................
20
SY435D~
10
C'
..........
j
//
80
&0
100
1.&
1.4
1.8
Ambient Temperature [OC]
2.0
2.2
2.4
I
2.&
Forward Voltage [V]
Relative Intensity vs Ambient Temperature
Relative Intensity vs Forward Current
SR535D
I"--
~
r--.... r--...
VV
0.3
V
./
/
1
0.2
o. 1
}--
-40
-20
20
40
60
80
100
oV
o
120
Ambient Temperalure rC]
Relative Intensity
VI
/
V
I
/
SG235D
SY435D
/
/
/
1/
/
/
/
/'
/
o ./
o
10
20
30
20
Forward Current [mAl
Forward. Current
/
10
40
I
50
Forward Current [rnA]
4-10
30
40
NEe
NEe Electronics Inc.
SG236D,SY436D,SR536D
GREEN, AMBER, RED
FASHION LEDs
NEPCO SERIES
Description
Absolute Maximum Ratings
TA = +25°C
These three LEDs are full resin-molded LED lamps with
flat hexagonal faces which uniformly emit brilliant red,
green and amber light. They are especially suitable for
electronic equipment in audio applications which require
fancy displays.
Power Dissipation, POl
60/100mW
Forward Current, IFl
30/40mA
Reverse Voltage, VA
5V
Junction Temperature, TJ
100'C
-40'C to +100'C
Features
Storage Temperature, TSTG
o
o
o
Note: 1. SR536D/SG236D, SY436D
o
o
Flat hexagonal face
Low cost
Long lead
Bright red, green or amber
Compatible with integrated circuits
Electro·Optical Characteristics
TA = +25°C
limits
Applications
o
o
o
Parameters
Visual displays
Radio and stereo equipment indicators
Measuring instrument terminals
Forward Voltage
SR536D
Package Dimensions
(0.118)
Min
Typ
Max
Unit
VF
2.0
2.5
V
IF = lOrnA
VF
2.0
2.5
V
IF = lOrnA
SY436D
VF
2.0
2.4
V
IF = lOrnA
IR
0.01
10
p.A
VA = 4.5V
SG236D
IR
0.01
10
p.A
VA = 4.5V
SY436D
IR
0.01
10
p.A
VR = 4.5V
CT
100
pF
V = 0,
f = 1.0MHz
100
pF
CT
60
pF
Capacitance
SR536D
SAS36D:
Red plastic
package
SG236D
SG236D:
Green plastic
package
SY436D:
Amber plastic
package
SY436D
Peak Emission
Wavelength
SR536D
10 ± 0.3
T~~
===r
37±1
(1.457)
1 Max
(0.039 Max)
Part A: 1.05
(0.041)
Part B: 0.6
(0.024)
f
1
CD~_~__________~
2.S4
Part B: tb O.B Max
(¢ 0.031 Max)
V = 0,
= 1.0MHz
f
V = 0,
= 1.0MHz
f
XpEAK
695
nm
IF = lOrnA
SG236D
XPEAK
565
nm
IF = lOrnA
SY436D
XpEAK
590
nm
IF = lOrnA
Spectral Line
Half Width
SR536D
22 Max
(0.866 Max)
Part A: (jJ 1.2 Max
(¢ 0.047)
Test
Conditions
SG236D
Reverse Current
SR536D
3
Symbol
t.x
100
nm
IF = lOrnA
SY236D
t.x
40
nm
IF = lOrnA
SR436D
t.x
40
nm
IF = lOrnA
Luminous
Intensity
SR536D
Iv
0.2
0.5
mcd
IF = lOrnA
SG236D
IV
0.2
0.7
mcd
IF = lOrnA
SY436D
IV
0.2
0.7
mcd
IF
(0,10+
CD Anode
® Cathode
Cf'
Package Dimensions In Millimeters (Inches)
B3·000314A
4-11
=
lOrnA
II
NEe
SG236D,SY436D,SA536D
Typical Characteristics
TA = +25°C
Maximum Forward CUrrent VB Ambient Temperature
Forward Current va Forward Vollage
50
50
..-'lL:
30
20
C
....
40
..
S
/
SG236D, SY436D
SY436D~
10
~SR536D
SG236D
........
~
.3
30
"'-
.........
i°
SR536D?
u. 20
e
/I
I'-..... "'-
............ .........
=
I
././
" ",,-
10
://
1
0.5
0.3
1
0.2
o
II
0.1
o
20
100
80
60
40
1.4
1.6
1.8
2.0
2.2
2.4
Ambient Temperature [OC]
Forward Voltage [V]
Relative Intensity vs Ambient Temperature
Relative Intensity vs Forward Current
2.6
SR536D
t'--..
~.;
~
~
r---.. t'--..
V
0.5
V
II:
0.3
/
oV
o
0.2
o.1
-40
20
-20
40
60
80
100
120
Ambient Temperature [OC]
Relallve Intensity
VI
V
/
V
/
SG236D
SY436D
/
/
/
/
/
o
o
......
/"
V
10
20
30
/
10
20
Forward Current (rnA)
Forward Current
L
/
V
40
50
Forward Current [rnA]
4-12
30
40
tttrEC
SG237D,SY437D,SR537D
GREEN, AMBER, RED
FASHION LEDs
NEG Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
These three LEDs are full resin-molded LED lamps with
flat elliptical faces which uniformly emit brilliant red,
green and amber light. They are especially suitable for
electronic equipment in audio applications which require
fancy displays.
TA = +25°C
Power Dissipation, POl
60/100mW
Forward Current, IFl
30/40mA
Reverse Voltage, VR
5V
Junction Temperature, TJ
100°C
-40°C to +100°C
Features
Siorage Temperature, TsrG
o
o
Note: 1. SR537D/SG237D, SY437D
o
o
o
Flat elliptical face
Lowcost
Long lead
Bright red, green or amber
Compatible with integrated circuits
Electro-Optical Characteristics
TA = +25°C
Limits
Applications
o
o
o
Parameters
Visual displays
Radio and stereo equipment indicators
Measuring instrument terminals
Forward Voltage
SR5370
Package Dimensions
~
3
(0.118)
2.5 ± 0.2
(0.098)
3.2
(0.126)
Min
Typ
Max
Unit
VF
2.0
2.5
V
IF
~
VF
2.0
2.5
V
IF
~
lOrnA
SY4370
VF
2.0
2.4
V
IF
~
lOrnA
SR537D:
Red plastic
IR
0.01
10
/LA
VR
SG2370
IR
0.01
10
/LA
VR ~ 4.5V
SY4370
IR
0.01
10
/LA
VR
SR5370
Cr
100
pF
V ~ 0,
I ~ 1.0MHz
package
SG237D
Cr
100
pF
V ~ 0,
I ~ 1.0MHz
SY4370
Cr
60
pF
V ~ 0,
I ~ 1.0MHz
SG237D:
410.2
Green plastic
package
(0.158)
~
Amber plastic
package
10 ± 0.3
(0.394)
,
Peak Emission
Wavelength
SR5370
13 ± 0.5
(0.512)
(~:ia)- 1+
Part A: 1.05
(0.041)
Part 8:0.6
(0.024)
37 ± 1
(1.457
I!
1 Max
695
nm
IF
~
lOrnA
i-PEAK
565
nm
IF
~
lOrnA
SY4370
i-PEAK
590
nm
IF = lOrnA
r·'
/!"II.
100
nm
IF = lOrnA
SY2370
/!"II.
40
nm
iF = lOrnA
SR4370
/!"II.
40
nm
IF = lOrnA
Luminous
Intensity
SR537D
Iv
0.2
0.5
mcd
IF = lOrnA
SG2370
Iv
0.2
0.7
mcd
IF = lOrnA
SY4370
Iv
0.2
0.7
mcd
IF = lOrnA
966
":0
Part A: r:b 1.2 Max
I+--- _(;i5~)
( 0.047 Max)
l ~O
pa(~ ~.~;1 o~.~ax)
"
41)
4.5V
i-PEAK
22 Max
CD
~
4.5V
SG237D
Spectral Line
Half Width
SR537D
(0.039 Max)
(0.
~
lOrnA
Capacitance
1.8 ± 0.2
(0.071)
SY437D:
Test
Conditions
SG2370
Reverse Current
SR5370
(0.035)
Symbol
CD Anode
® Cathode
Package Dimensions i n Millimeters (Inches)
B3-OD0315A
4-13
II
fttfEC
SG237D,SY437D,SR537D
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperalure
Forward Current vs Forward Voltage
50
50
:;;
oS
~
3
,
40
E
..i
~
SG237D, SY437D
//
SY437D~
10
~~R537D
SG237D
.........
30
.........
'" ""
1!
l!
{l
....,..........
30
20
20
~
10
o
o
............
""" r--..."""
0.5
I
100
80
60
11/
1
........
40
20
"
11
.........
SR537D-""
0.3
0.2
/,
0.1
1.6
1.4
1.8
Ambient Temperature (OC]
Relatlve Intensity VB Ambient Temperature
r-.... r-....
r----..
~40
20
~20
40
60
80
100
Ambient Temperature
V
/
oV
o
120
eel
V
I
/
SG237D
SV437D
/
f
./
V
/
/
L
IL
./
o ./
o
V
10
./
20
30
2.4
I
2.6
/
V
SR537D
~
/
10
20
Forward Current (mA]
Relative Intensity vs Forward Current
/
--
V
o. 2
o.1
2.2
Relative Intensity vs Forward Current
-
0.3
2.0
Forward Voltage [V]
40
50
Forward Current [rnA]
4-14
30
40
ttlEC
SG238D
GREEN
FASHION LED
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SG238D is a full resin-molded LED lamp with a flat
rectangular face which uniformly emits brilliant green
light. It is especially suitable for electronic equipment in
audio applications which require fancy displays.
D
D
D
D
D
D
Package Dimensions
SG238D:
Green Plasllo
Package.
+m
Flat rectangular face
Low cost
Long lead
Bright green
Compatible with integrated circuits
Red (SR538D) and amber (SY438D) LEDs are
available in the same package style
Applications
3
(0.118)
D
D
D
D
+
5
(0.197)
Visual displays
Peak level indicators
Radio and stereo equipment indicators
Measuring instruments, terminals
2.0 ± 0.2
(0.079)
1.8 ± D.2
(0.071)
Absolute Maximum Ratings
t
TA = +25°C
4 ± 0.2
(0.158)
100mW
Power Dissipation, PD
i--'----'--i~
Forward Current, IF
40mA
Reverse Voltage, VR
5V
Junction Temperature, TJ
100'C
-40 to +100'C
Storage Temperature, TSTG
Part A: 1.05
(0.041)
Electro·Optical Characteristics
Part B: 0.6
(0.024)
TA
=
+25°C
limits
22 Max
(0.866 Max)
Parameters
Part B: c/J O.S Max
(¢ 0.031 Max)
Min
jest
Typ
Max
Unit
VF
2.0
2.5
V
IF = 10mA
Reverse Current
IR
0.01
10
p.A
VR = 4.5V
CT
100
pF
APEAK
565
nm
IF = 10mA
Spectral Line
Hall Width
tl.A
40
nm
IF = 10mA
Luminous
Intensity
Iv
0.5
mcd
IF = 10mA
2
2.54
(0.100)
Conditions
. Forward Voltage
G)'_-+_____-+
Part A: c/J 1.2 Max
(¢ 0.047 Max)
Symbol
(0.079)
Capacitance
CD Anode
® Cathode
Peak Emission
Wavelength
Package Dimensions in Millimeters (Inches)
83·000291A
4-15
0.2
V = 0,
1= 1.0MHz
II
NEe
SG238D
Typical Characteristics
TA
= +25°C
Forward Current vs Forward Voltage
Maximum Forward Current VI Ambient Temperature
50
50
30
/"
20
i
40
C
~
~
',,-
10
.........
30
u
1tl.
"
20
E
~
I
V
7
/
"
" "'"
10
o
o
20
40
II
60
0.3
0.2
I
o.1
100
80
1.4
1.8
1.6
2.2
2.0
Ambient Temperature rC]
2.4
Relallve Intensity vs Forward Current
Relative Intensity vs Ambient Temperature
7
r--- r--- ..........
f
£
.!!
/
/
--
0.5
0.3
./
/
/
,/
0.2
-40
-20
20
40.
60
80
100
o
o
120
Ambient Temperature [OC]
Spectral Distribution
1.2
1.0
I
b 0.8
I
~
~
0.6
~
0.4
~
I
I
o
500
1\
\
\
\
I
II
0.2
...
520
540
7
/
.!!
0.1
2.6
Forward Voltage [V]
1\
\
/
560
580
\
I
r-.
:;j
600
620
Wavelength [nm]
4-16
-
/'
I
./
:;j
10
20
30
Forward Current [rnA]
40
50
SG239D,SY439D,SR539D
GREEN, .AMBER, RED
FASHION LEDs
fttIEC
NEG Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25°C
These three LEDs are full resin-molded LED lamps with
flat circular faces which uniformly emit brilliant red,
green and amber light. They are especially suitable for
electronic equipment in audio applications which require
fancy displays.
Power Oissipation, P01
o
o
o
100'C
8torage Temperature, TSTG
Electro-Optical Characteristics
TA = +25°C
Limits
Parameters
Visual displays
Radio and stereo equipment indicators
Measuring instrument terminals
Forward Voltage
8R5390
802390
8Y4390
Package Dimensions
Reverse Current
8R5390
3
~O~Oi9~·2 - ~
l- I-
¢1.8±O.2
(¢ 0.071)
410.21
~."
.5
(0.51 2)
rn
Part B: 0.6
(0.024)
0.6
(0.024)
I
22Max
(0.866 Max}
®
CD
I
2
( 0.079)
2.54 J
(0.100)
Part A q, 1.2 Max
Part B q, O.S Max
Package Dimensions In Millimeters (Inches)
Unit
VF
2.0
2.5
V
IF
=
lOrnA
VF
2.0
2.5
V
IF
=
10mA
VF
2.0
2.4
V
IF
=
10mA
IR
o.m
10
/LA
VR
=
4.5V
IR
0.01
10
/LA
VR
=
4.5V
8Y4390
IR
o.m
10
/LA
VR
=
4.5V
8R5390
CT
100
pF
V = 0,
f = 1.OMHz
802390
CT
100
pF
V = 0,
f = 1.OMHz
8Y4390
CT
60
pF
V = 0,
f = 1.OMHz
;"PEAK
695
nm
IF
=
10mA
802390
;"PEAK
565
nm
IF
=
lOrnA
8Y4390
;"PEAK
590
nm
IF
=
10mA
Spectral Line
Hall Width
8R5390
1 ax
(0.039 Max)
.-
Max
802390
Peak EmiSSion
Wavelength
8R5390
10±O.3
(0.394)
Part A: 1.05
(0.041)
Test
Conditions
Typ
Min
2.5 ± 0.2
(0.098)
~)
1
8ymbol
Capacitance
(0.118)
(0.197)
SR539D:
Red plastic
package
SG239D:
Green plas tic
package
SY439D:
Amber plas tic
package
-40'C to +lOO'C
Note: 1. SR539D/SG239D, SY439D
Flat circular face
Low cost
Long lead
Bright red, green or amber
Compatible with integrated circuits
¢
5V
Junction Temperature, TJ
Applications
o
o
30/40mA
Reverse Voltage, VR
Features
o
o
o
60/100mW
Forward Current, IF1
CD Anode
® Cathode
83·Q00317A
4-17
I!.;"
100
nm
IF
=
10mA
8Y2390
AI..
40
nm
IF
=
10mA
8R4390
A;"
40
nm
IF
=
10mA
Luminous
tntensity
8R5390
Iv
0.2
0.5
mcd
IF
=
10mA
802390
Iv
0.2
0.7
mcd
IF
=
10mA
8Y4390
Iv
0.2
0.7
mcd
IF
=
10mA
II
ttlEC
SG239D,SY439D,SR539D
Typical Characteristics
TA = +25°C
Maximum Forward Currenl vs Ambient Temperature
Forward Current vs Forward Voltage
50
~
50
.
i!
.
40
......
/
C
~
U
SG239D, SV439D
//
SV439D '--.....
10
~SR5390
SG239D
.........
30
..........
r-.....
1!
SR539D/
°
e
u. 20
.~
:!l
...-I .........
30
20
LL
""- ~
"
"
...........
10
o
o
~
so
40
20
II
0.5
I
80
100
0.3
0.2
/,
0.1
1.4
1.6
2.0
1.8
Ambient Temperature [DC]
2.2
2.4
2.S
Forward Voltage [V]
Relative Intensity vs Ambient Temperature
Relative Intensity vs Forward Current
----
SR539D
..........
1:
...........
~
...........
-
~
~
ll.
.!!
0.5
0.3
V
V-
./
/
/
/
0.2
0.1
-40
o
-20
20
40
60
80
100
120
Ambient Temperature rOC]
/
SG239D
$V4390
/
/
/
/
/
/
/
./
./
o /
o
/'
10
20
30
10
20
Forward Current [mAl
Relative Intensity vs Forward Current
V
V
o
40
50
Forward Currenl [rnA]
4-18
30
40
SG240D,SY4400,SR540D
GREEN, AMBER, REO
FASHION LEOs
t-{EC
NEG Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25°C
These three LEDs are full resin-molded LED lamps with
flat rectangular faces which uniformly emit brilliant red,
green and amber light. They are especially suitable for
electronic equipment in audio applications which require
fancy displays.
30/40mA
Forward Current, IFl
5V
Reverse Voltage, VR
100'C
Junction Temperature, TJ
Storage Temperature, TSTG
Features
D
D
D
D
D
60/100mW
Power Dissipation, POl
-40'C to +lOO'C
Note: 1. SR540D/SG240D, SY440D
Flat rectangular face
Low cost
Long lead
Bright red, green or amber
Compatible with integrated circuits
Electro-Optical Characteristics
TA = +25°C
Limits
Applications
Parameters
D Visual displays
D Radio and stereo equipment indicators
D Measuring instrument terminals
Forward Voltage
SR5400
Package Dimensions
2.1 ± 0.2
(0.083)
2 ± 0.2
(0.078)
Min
Typ
Max
Unit
Test
Conditions
VF
2.0
2.5
V
IF = 10mA
SG2400
VF
2.0
2.5
V
IF = 10mA
SY4400
VF
2.0
2.4
V
IF = 10mA
10
!LA
VR = 4.5V
10
!LA
VR = 4.5V
V = 0,
f = 1.OMHz
Reverse Current
SR5400
2.8
(0.110)
Symbol
IR
0.01
SG2400
IR
0.01
SY4400
IR
0.01
SR5400
CT
100
pF
SG2400
CT
100
pF
SY4400
CT
60
pF
Capacitance
Peak Emission
Wavelength
SR5400
Part A: 1.05
V = 0,
f = 1.OMHz
V = 0,
f = 1.OMHz
695
nm
IF = 10mA
SG2400
565
nm
IF
SY4400
590
nm
IF = 10mA
=
10mA
(0.041)
SA540D:
Red plastic
Spectral Line
Hall Width
SR5400
Part B: 0.6
(0.024)
package
SG240D:
Green plastic
package
SY440D:
Amber plastic
package
Part A: 4> 1.2 Max
(~ 0.047 Max)
Part B: q, O.B Max
(~ 0.031 Max)
Package Dimensions
In Millimeters (Inches)
CD
CD Anode
® cathode
83-00031BA
4-19
100
nm
IF = 10mA
SY2400
40
nm
IF = 10mA
SR4400
40
nm
IF = 10mA
tJ.A
Luminous
Intensity
SR5400
IV
0.3
0.8
mcd
IF = 10mA
SG2400
IV
0.7
1.5
mcd
IF = 10mA
SY4400
IV
0.7
1.5
mcd
IF = 10mA
II
tt.'EC
SG240D, SY440D, SR540D
Typical Characteristics
TA= +25°C
Maximum Forward Current va Ambient Temperature
50
Forward Current vs Forward Voltage
50
1...,.
C 40
.§.
..... . , - SG240D, SV440D
-,;
B 30
SR540D/
20
~
~~R540D
SG240D
"
/I
..........
II
............ ..........
=
E
~
SV440D~
10
..........
r-.....
!
°E
//
..........
'l!
,,,"
...-I .........
30
20
-"
" r--.,..........
10
o
o
20
I
80
60
40
0.5
100
0.3
0.2
iJ
0.1
1.4
1.6
1.8
2.0
2.2
2.4
Ambient Temperature [DC]
Forward Voltage [V)
Relative Intensity vs Ambient Temperature
Relative Intensity vs Forward Current
I
2.6
----
SR540D
r--.. .........
~
1
r--....
~
i
~
-
.5
0.5
il.
0.3
V
/
oV
0.2
0.1
-40
20
-20
40
60
80
100
o
120
Ambient Temperature [OC]
Relative Intensity
VI
/
V
V
/
SG240D
SV440D
/
/
/
/
/
./
1
o .,/
o
./
./
10
20
30
L
10
20
Forward Current [mAl
Forward Current
/
/
/
40
50
Forward Current [rnA]
4-20
30
40
SG261D,SY461D,SR661D
GREEN, AMBER, RED
FASHION LEDs
t\'EC
NEe Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
TA
The SR661D, SG261D and SY461D are rectangular
(2mm x 3mm) plastic-resin-encapsulated LED lamps
which uniformly emit brilliant red, green and amber light.
They are suitable for use as fashionable indicators on
the panels of audio/video equipment and elsewhere.
o
o
o
o
100mW
40mA
5V
Reverse Voltage, VR
100°C
Junction Temperature, TJ
-40°C to + 100°C
Storage Temperature, TSTG
Flat rectangular face
Lowcost
Long lead
Bright red, green or amber
Compatible with integrated circuits
Electro.Optical Characteristics
TA = +25°C
Applications
o
o
+25°C
Forward Current, IF
Features
o
o
=
Power Dissipation, Po
Limits
Visual displays
Radio and stereo equipment indicators
Measuring instrument terminals
Parameters
Forward Voltage
SR661D
Package Dimensions
Symbol
Min
2.0
2.5
V
IF
=
10mA
2.0
2.5
V
IF
=
10mA
SY461D
VF
2.0
2.5
V
IF = 10mA
IR
0.01
10
/LA
VR
IR
0.01
10
/LA
VR = 4.5V
0.01
10
/LA
VR = 4.5V
V = 0,
1= 1.0MHz
10.7 = 0.3
(0.421)
SR661D
CT
100
pF
SG261D
CT
100
pF
SY461D
CT
60
pF
Peak Emission
Wavelength
SR661D
0.5
(0.0'0)
0.6
(0.024)
0.5
(0.020)
4.5V
I
2.0 =0.5
(0.079)
CD'+'--I---'-----'-
V = 0,
1= 1.0MHz
V = 0,
1= 1.OMHz
630
nm
IF = 10mA
SG261D
565
nm
IF = 10mA
SY461D
590
nm
IF = 10mA
APEAK
Spectral Line
Half Width
SR661D
24 ±1.0
(0.945)
2.54
(0.100)
=
Capacitance
1.9 ± 0.2
(0.075)
CD Anode
® Cathode
Test
Conditions
VF
SY461D
SR661D:
Red plastic
package
SG.61D:
Green plastic
package
SV461D
Amber plastic
package
Unit
VF
SG261D
2.0 ± 0.2
(0.079)
Max
SG261D
Reverse Current
SR661D
3.1 :!:: 0.2
(0.122)
Typ
40
om
IF = 10mA
SG261D
40
om
IF = 10mA
SY461D
40
nm
IF = 10mA
IF = 10mA
Luminous
Intensity
SR661D
IV
0.4
1.0
mcd
SG261D
IV
0.4
1.5
mcd
IF
=
10mA
SY461D
IV
0.4
1.5
mcd
IF
=
10mA
Package Dimensions in Millimeters (Inches)
83·Q00360A
4-21
II
NEe
SG261D, SY461D, SR661D
Typical Characteristics
TA = +25°C
Maximum Forward Current va Ambient Temperature
Forward Current
so
30
20
C
40
'r-...
oS
C
§
U
.
0
IL
""
20
E
·a
:Il
o
40
20
-'f
~
~R661D
r/f
/,
//
..........
"
10
o
Forward Voltage
......
30
1!
i!
VI
50
80
60
Ambient Temperature
/
~SG261D
SY481D
0.5
I
100
0.3
0.2
I
0.1
1A
fit
/ VI
1.6
1.8
eel
2.0
2.2
2.4
I
2.6
Forward Voltage [V]
Relative Intensity vs Forward Current
Relative Intensity vs Ambient Temperature
V
..........
l:
............
)
7
/
/
............
/
.5
~
~ 0.5
V
Ii.
0.3
V
0.2
0.1
/
-40
-20
20
40
60
80
100
o
120
./
o
10
20
30
Forward Current ImA)
Ambient Temperature [OC]
4-22
40
I
50
t\'EC
SR531D
RED
FASHION LED
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SR531D is a full resin-molded LED lamp with a flat
circular face which uniformly emits brilliant red light. It is
especially suitable for electronic equipment in audio
applications which require fancy displays.
o
o
o
o
o
o
Package Dimensions
Applications
@
SR531D:
Red diffused
plastic lens
o
o
o
¢ 5.48
(¢ 0.216)
Visual displays
Radio and stereo equipment indicators
Measuring instruments, terminals
Absolute Maximum Ratings
¢5
(¢ 0.197)
Flat circular face
Lowcost
Long lead
Bright red
Compatible with integrated circuits
Green (SG231D) and amber (SY431D) LEDs are
available in the same package style
TA = +25°C
4.9
1/+----1* (¢¢0.193)
~!·g.~~i1-ttt-"""_+1
sc
Power Dissipation, PD
60mW
Forward Current, IF
30mA
5V
Reverse Voltage, VR
Junction Temperature, TJ
Storage Temperature, TSTG
Electro·Optical Characteristics
TA = +25°C
Limits
Parameters
Part A: 1.04
(0.041)
Forward Voltage
Part A:
Min
VF
Reverse Current
25 Min
Part B: 0.65
(0.025)
Symbol
J"
Test
Conditions
Typ
Max
2
2.5
V
IF= 10mA
0.01
10
p.A
VR = 4.5
Unit
CT
100
pF
V =0
F = 1.0MHz
APEAK
695
nm
IF = 10mA
Spectral Line
Half Width
t.A
100
nm
IF = 10mA
Luminous
Intensity
Iv
0.5
mcd
IF = 10mA
Capacitance
Peak Emission
Wavelength
q, 1.2 Max
(¢ 0.047 Max)
CD Anode
® Cathode
Package Dimensions In Millimeters (Inches)
83·0003118
4-23
0.2
II
ftt{EC
SR531D
Typical Characteristics
TA = +25°C
Forward Currenl va Forward Voltage
Maximum Forward Current V8 Ambient Temperature
50
40
30
20
./
/
Ci
!
10
30
~
i'-.
a
1! 20
!
CO
~
tl.
E
.E=
~
o
40
20
I
"
.........
~
L
itl.
"
60
I
80
100
0.3
0.2
I
0.1
1.4
1.6
Relative Intensity vs Forward Current
f
r-....
,/
I
V
/
1/
-40
-20
20
40
60
80
100
o
o
120
Spectral Distribution
1.0
i"'"
1
I
If
08
.
/
"'"\.
\.
~
J
\.
I\..
\..
/
V
0.2
I\.
L
'\
./
640
660
680
700
Wavelength Inm)
720
10
20
Forward Current [rnA]
Ambient Temperalure [DC]
o
/
/
o.1
OA
2.6
..- f..--
."....
0.2
I
2.4
Relative Intensity va Ambient Temperature
0.3
0.6
2.2
Forward Vottage IV]
0.5
G
2.0
1.B
Ambient Temperature (DC]
r--.. .........
f
i
"'-
10
o
,
..§
!
740
I
"
760
4-24
30
I
40
NEe
NEG Electronics Inc.
SR538D
RED
FASHION LED
NEPOC SERIES
Description
Features
The SR538D is a full resin-molded LED lamp with a flat
rectangular face which uniformly emits brilliant red light.
It is especially suitable for electronic equipment in audio
applications which require fancy displays.
o
o
o
o
o
o
Package Dimensions
3
10.118)
SR5380:
Red plastic
package
Flat rectangular face
Low cost
Long lead
Bright red
Compatible with integrated circuits
Green (SG238D) and amber (SY438D) LEOs are
available in the same package style
Applications
o
o
o
Visual displays
Radio and stereo equipment indicators
Measuring instruments, terminals
2.0::!: 0.2
10.079)
1.8::t 0.2
10.071)
Absolute Maximum Ratings
t
TA
4:!: 0.2
10.158)
1--'-----1..--1--+
10 :1:0.3
T":~:i
Part B: 0.6
10.024)
+25°C
60mW
Forward Current, IF
30mA
Reverse Voltage, VR
5V
Junction Temperature, TJ
T~===tl
Part A: 1.05
10.041)
=
Power Dissipation, Po
100'C
-40'C to +100'C
Storage Temperature, T8TG
1 Jax
10.039 Max)
Electro-Optical Characteristics
r
TA = +25°C
22 Max
Limits
10.866 Max)
Parameters
Part A: t/I 1.2 Max
«(I> 0.047 Max)
Part 8: (/I 0.8 Max
(~
0.031 Max)
2
10.079)
S,mbol
Min
Typ
Max
Unit
Forward Voltage
VF
2.0
2.5
V
Reverse Current
IR
0.01
10
,...A
CD Anode
® Cathode
0.2
4-25
Test
Conditions
= 10mA
VR = 4.5V
V = 0,
f = 1.0MHz
IF
100
pF
695
nm
IF
= 10mA
nm
IF
= 10mA
mcd
IF
= 10mA
0.5
II
t\'EC
SR538D
Typical Characteristics
TA = +25°C
Forward Current YS Forward Voltage
Maximum Forward Current vs Ambient Temperature
40
50
30
20
"..
g
30
;;g
'",-
~
~
"'-I"""
u
itl.
20
E
~
I
!
40
I
of
::l
20
60
80
100
0.3
0.2
I
0.1
1.4
/
0.3
/
oV
0.2
20
40
60
80
100
o
120
Ambient Temperature [(Ie]
Spectral Distribution
1.0
I
1/
1
""'" I\.
"\
[\,.
"- \.
"- I\.
/
II"
0.2
o
"'
/
./
640
660
~
680
700
Wavelength loml
720
./
/'
/
10
20
Forward Current [mAl
1.2
/
-
.....-
r--.....
-20
I
2.6
Aelative Intensity VB Forward Current
........
-40
2.4
Forward Voltage [VI
Relative Intensity vs Ambient Temperature
0.1
2.2
2.0
1.8
1.6
Ambient Temperature [DC]
r-..... r--.......
/'
II
~
"- I'.....
I
o
10
u
t!
10
o
V
740
""
760
4-26
30
I
40
!\fEe
SR632D
RED
GaAsP(N)
FASHION LED
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SR6320 is a full resin-molded LEO lamp with a flat
rectangular face which uniformly emits brilliant red light.
It is especially suitable for electronic equipment in audio
applications which require fancy displays.
o
o
o
o
o
o
Package Dimensions
4 :1:0.2
(0.158)
2.5 ± 0.2
5 ± 0.2
(0.098)
~
3±0.2
(0.118)
SA632D:
Red diffused
plastic lens
I'
Flat rectangular face
Lowcost
Long lead
Bright red
Compatible with integrated circuits
Green (SG2320) and amber (SY4320) LEOs are
available in the same package style
Applications
o
o
o
'I
Visual displays
Radio and stereo equipment indicators
Measuring instruments, terminals
Absolute Maximum Ratings
TA = +25°C
i
r
10
0.394)
Power Dissipation, Po
9 ± 0.3
(0.354)
Reverse Voltage, VA
-; t\··, :,
Junction Temperature, TJ
\
,..
I(0
Part B: 0.65
(0.025)
+- •
+ CD
!:lI
Y
....
TA = +25°C
t
Limits
Parameters
2.54
(0. 100)
I->
Part A: c/> 1.2 Max
(~1.2 Max)
B:~ 0.8 Max ~~
(~ 0.031 Max)
.....
Package Dimen
in Millimeters (Inches)
6S
(0.024)
0.
2
®
P art
-40"C to + 100"C
Electro·Optical Characteristics
25 Min
(0.9 84 Min)
t
5V
100"C
Storage Temperature, TSTG
0.85
(0.033)_
Part A: 1.04-+(0.041)
(0.;79)
40mA
("(';.3._ ...
I"
1 1
1
100mW
Forward Current, 'F
63-000359A
Min
Tvp
Max
Unit
Test
Conditions
Forward Voltage
VF
2.0
2.4
V
Reverse Current
'A
0.01
10
/LA
CT
100
pF
Peak Emission
Wavelength
ApEAK
630
nm
'F = 10mA
Spectral Line
Hall Width
Il.A
40
nm
'F = 10mA
Luminous
Intensity
Iv
1.2
mcd
'F = 10mA
Capacitance
CD Anode
® Cathode
Svmbol
4-27
0.5
'F = 10mA
= 5V
V = 0,
1= 1.0MHz
VA
II
t-IEC
SR632D
Typical Characteristics
TA = +25°C
Maximum Forward Current
YS
Forward Current VB Forward Voltage
Ambient Temperature
50
50
/" '"
20
C'
40
...... r-...
oS
.
.
C
~
C'
§
"'
:ro
u
10
'I!
t1.
.
~
..........
~
E
/
u
"'"
20
/
'I!
.......,
E
...
0
~
:I!
"'"
10
o
o
20
40
60
Ambient Temperature
I
100
80
0.5
;:!
I
0.2
0.1
1.4
I
~
Ii!
1.6
[Oel
!8!
./
V
0.2
-40
-20
20
40
60
80
Ambient Temperature
100
o
120
[Oel
Spectral Distribution
1.0
I' "'\.
II
0.8
§
I
.5 0.6
~
'/;so
~
II
0.4
0.2
1\
\
I
~
II:
/
"\
/
V
r\.
"
./
600
620
640
660
/
o
./
/
10
20
30
Forward Current (rnA]
1.2
i
L
v
V
0.3
~
2.6
/
0.5
0.1
2.4
Relative Intensity vs Forward Current
r----. ...........
~
J
2.2
Forward Voltage [VJ
Relative Intensity vs Ambient Temperature
...........
2.0
1.8
.......
r-....
680
I
700
Wavelength [nm]
4-28
40
I
50
SY431D
AMBER
GaAsP
FASHION LED
t\'EC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The SY431D is a full resin-molded LED lamp and has a
circular flat face which emits brilliant amber light uniformly.
It is especially suitable for electronic equipment as for
audio uses which require some fancy looking displays.
o
o
o
o
o
o
Package Dimensions
Circular flat face type
Lowcost
Long lead
Bright amber
Compatible with integrated circuits
Red (SR531 D) and green (SG231 D) LEOs are
available in the same package .
Applications
@
SY431D:
Amber diffused
plastic lena
,,5
o
Visual displays
o
Measuring instrument, terminal
o Radioand stereo equipment indicators
,,5.48
Absolute Maximum Ratings
(" 0.218)
TA
(,,0.197)
" 4.9
III----.jlt (,,0.193)
~:·~.~9~il1tf-,...._~
se
= +25°C
Power Dissipation, Po
100mW
Forward Current, IF
40mA
Reverse Voltage, VR
5A
100·C
Junction Temperatures, TJ
- 40°C to +1000C
Storage Temperature, TSTG
II
I
Electro-Optical Characteristics
TA = +25°C
Umits
0.85
(0.033)
Parameters
S,mbot
Min
Typ
Max
Unit
Test
Conditions
Forward Voltage
VF
2.0
2.4
V
IF = 10mA
Reverse Current
IR
0.01
10
pA
VR = 4.5V
Capacitance
CT
60
pF
V = 0,
f = 1.0MHz
Peak Emission
Wavelength
APEAK
590
nm
IF = 10mA
Spectral Line
Half Width
o,A
40
nm
IF = 10mA
Luminous
Intensl"
Iv
30
mcd
IF = 10mA
Part B: 0.65
(0.025)
Part A: 0.047 Max)
Part B: 0.031 Max)
CD Anode
® Cathode
Package Dimensions In Millimeter. (Inchaa)
83-OOO289A
4-29
0.1
t\'EC
SY431D
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
50
30
20
C
40
'r--..
S
C
§
30
u
1If
.
C
"
"
20
.
c
~
"'" "-
~
;;
10
o
V
10
S
E
::E
-
Forward Current vs Forward Voltage
50
u
I
'E!
!
If
-.......
0.5
0.3
0.2
o
40
20
100
80
60
I
!/
0.1
1.4
1.6
1.8
2.0
2.2
2.4
Ambient Temperature rOC]
Forward Vollage [V]
Relative Intensity vs Ambient Temperature
Relative Intensity va Forward Current
I
2.6
/
1/
r--.. ...........
/
/
r--.....
/
/
--
0.3
/
V
/
,/
/"
0.2
./
o.1
-40
20
-20
40
60
80
100
o
o
120
Ambient Temperature rOC]
Spectral Distribution
1.2
1.0
~
1 '\
I \
I
0.8
!!
i
0.6
\
I
a: 0.4
I
540
I
"
...,.. .....
560
\
I\.
/
0.2
o
,
580
600
..........
620
r-- I--640
i
660
Wavelength [nm]
4-30
---
10
20
30
Forward Current [rnA]
40
50
NEe
NEe Electronics Inc.
SY432D
AMBER
FASHION LED
NEPOC SERIES
Description
Features
The SY432D is a full resin-molded LED lamp with a flat
rectangular face which uniformly emits brilliant amber
light. It is especially suitable for electronic equipment in
audio applications which require fancy displays.
o
o
o
o
o
o
Package Dimensions
Flat rectangular face
Low cost
Long lead
Bright amber
Compatible with integrated circufts
Red (SR632D) and green (SG232D) LEDs are
available in the same package style
Applications
4 ± 0.2
(0.158)
SY432D:
Amber diffused
plastic lens
~
I"
o
2.5 :to.2
5 ± 0.2
-I
o
(0.09B)
3!0.2
(0.118)
o
o
Visual displays
Peak level indicators
Radio and stereo equipment indicators
Measuring instruments, terminals
Absolute Maximum Ratings
r
TA = +25°C
9L
Power DiSSipation, PD
"!'T
5V
Junction Temperature, TJ
100·C
-40·C to +100·C
Storage Temperature, TSTG
t
Electro·Optical Characteristics
TA = +25°C
Limits
Parameters
2.54
(0.100)
Package Dimensions
in Millimeters (Inches)
40mA
Reverse Voltage, VR
65
(0.024)
0.
Part B: uJ 0.8 Max
(til 0.031 Max)
100mW
Forward Current, IF
Forward Voltage
CD Anode
® Cathode
4-31
Min
Typ
Max
Unit
Test
Conditions
VF
2.0
2.4
V
IF = 10mA
Reverse Current
IR
0.01
10
p.A
VR = 4.5V
Capacitance
Cr
100
pF
V = 0,
1= 1.0MHz
APEAK
590
nm
IF = 10mA
Spectral Line
Hall Width
dA
40
nm
IF = 10mA
Luminous
Intensity
Iv
0.5
mcd
IF = 10mA
Peak Emission
Wavelength
83-000379A
Symbol
0.2
II
NEe
SY432D
Typical Characteristics
TA = +25°C
.
Maximum Forward Current vs Ambient Temperature
Forward Current VI Forward Voltage
so
SO
30
20
C'
!
i
~
u
'i'.
........
C'
0
IL
c
..........
~
1l
..........
20
l!
..........
~
~
'r-..
10
o
o
20
40
/
'l!
E
I
10
!
30
'l!
!
/
40
60
0.5
0.3
0.2
0.1
1.4
100
80
I
'/
1.8
1.8
Ambient Temperature rOC]
r--.. ............
i!
.!!
.5
!
!
r--....
........
0.5
0.3
0.2
0.1
-40
-20
20
40
60
80
100
o
o
120
Spectral Distribution
1.2
f.!!
f "\
I \
I
,
0.8
.5 0.6
\
~=
a: 0.4
0.2
o
540
.'\
I
-
I\.
"- ..........
/
r- ~
~
560
580
600
620
...... / '
/
10
/
V
1/
20
V
30
Forward Current [rnA]
Ambient Temperalure rOC]
1.0
2.2
2A
2.6
RetaUve Inlenslly va Forward Current
Relative Intensity va Ambient Temperature
1>
2.0
Forward Voltage [VI
640
I
660
Wavelength [nm}
4-32
v
40
I
so
ftt{EC
SY438D
AMBER
FASHION LED
NEC Electronics Inc.
NEPOC SERIES
Description
Features
The SY438D is a full resin-molded LED lamp with a flat
rectangular face which uniformly emits brilliant amber
light. It is especially suitable for electronic equipment in
audio applications which require fancy displays.
o
o
o
o
o
Package Dimensions
SY438D:
Applications
3
Amber PlaStiC-Ea3-
package
o
o
o
o
o
(0.118)
...
5
2.0
(0.197)
=0.2
(0.079)
2.0 • 0.2
(0.079)
Flat rectangular face
Lowcost
Long lead
Bright amber
Compatible with integrated circuits
Red (SR538D) and green (SG238D) LEOs are
available in the same package style
Visual displays
Peak level indicators
Radio and stereo equipment indicators
Measuring instruments, terminals
1.8 : 0.2
(0.071)
Absolute Maximum Ratings
t
4 .. 0,2
TA
(0.158)
i--'---L.-I--~
10 =- 0.3
(0.041)
+25°C
100mW
40mA
Forward Current, IF
T~;'~
Part A: 1.05
=
Power Dissipation, Po
5V
Reverse Voltage, VR
100'C
Junction Temperalure, TJ
T~==:jlt
-40'C to +100'C
Storage Temperature, T5TG
1 Max
(0.039 Max)
Part B: 0.6
Electro-Optical Characteristics
(0.024)
r
TA = +25°C
1
Parameters
22 Max
(0.866 Max)
Umlts
Test
(D'_-+_____+
Pari A: fb 1.2 Max
(.b 0.047 Max)
Part B: cf, O.S Max
(,f, 0.031 Max)
B3-0003B3A
4-33
Typ
Max
Unit
Conditions
Forward Voltage
VF
2.0
2.4
V
IF
IR
0.01
10
pA
VR
~
lOrnA
~
4.5V
Cr
100
pF
V ~ 0,
f ~ 1.OMHz
APEAK
590
nm
IF
~
10mA
Spectral Line
Half Width
AA
40
nm
IF
~
10mA
Luminous
Intensity
Iv
0.5
mcd
IF
~
10mA
Peak Emission
Wavelength
Package Dimensions In Millimeters (Inches)
Min
Reverse Current
Capacitance
CD Anode
® Cathode
Symbol
0.2
II
ftt{EC
SY438D
Typical Characteristics
TA = +25°C
Maximum Forward Current VI Ambient Temperature
Forward Current va Forward Vollage
50
<"
50
30
20
!
I"
"3D
0
<"
!
e
~
"-
"" ""
1!
!
...
20
E
..
~
o
;;
o
20
40
10
"1!
"""
~ 10
ii
/
40
/
!
&.
0.5
"""
60
0.3
0.2
80
0.1
1.4
100
1.6
Reladve Intensity vs Forward Current
r--.....
......
0.3
0.2
-20
20
40
60
80
100
o
o
120
Spectral Distribution
1.2
r1\
1.0
I
I
0.8
\
\
II
J!!
.5 0.6
.,=
\
.!!
.l!
0.4
\
I
."
I
0.2
...- ......
540
560
580
600
Wavelength [nm]
....- / '
V
10
/
/
V
1/
..........
620
-
640
=---
6 60
4-34
2.6
v
"
20
30
Forward Current [mAl
Ambient Temperature [OC]
f
2.4
Relative Intensity vs Ambient Temperature
0.5
-40
2.2
Forward Voltage [V]
0:
0.1
2.0
1.8
Ambient Temperature [OC]
r---.. .............
I
I
I
40
I
50
- -
.....
t-{EC
PHOTO COUPLERS
5-1
II
t\'EC
PHOTO COUPLERS
Section 5 - Photo Couplers
4N25 Photo Coupler, Single Transistor ................................................ 5-3
6N136 High Speed Photo Coupler .................................................... 5-7
6N137 High Speed Photo Coupler ................................................... 5-11
MCT2 Photo Coupler, Single Transistor .............................................. 5-15
PS20028 Photo Coupler Darlington Transistor ........................................ 5-19
PS20048 Photo Coupler Darlington Transistor ........................................ 5-23
PS20058 Photo Coupler High Impact Current Single Transistor ......................... 5-27
PS20068 PS20068(1) High Speed Photo Couplers .................................... 5-31
PS20078 High Speed Photo Coupler ................................................ 5-35
PS2010 Photo Coupler Single Transistor ............................................. 5-39
PS2021 Photo Coupler High Isolation Voltage Single Transisto~ ......................... 5-43
PS2022 Photo Coupler High Isolation Voltage Darlington Transistor ..................... 5-47
PS2401A-1, PS2401A-2, PS2401A-3, S2401A-4 Multichannel Photo Coupler
High Isolation Voltage Single Transistors ........................................... 5-51
PS3001, PS3002 SCR Photo Couplers ..... , ......................................... 5-55
PS3001(1), PS3002(1) SCR Photo Couplers .......................................... 5-59
Note: All Photo Couplers are UL approved. UL file #E72422.
5-2
t-{EC
4N25
PHOTO COUPLER
SINGLE TRANSISTOR
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The 4N25 is an optically coupled isolator containing a
GaAs light emitting diode and an NPN silicon photo
transistor.
o
Package Dimensions
Applications
o
o
o
o
1;::4 5M
6
9.25 ~ 0.5
(0.364)
o
o
o
o
<1>.1
r
High isolation voltage: 2500VDC
High transfer ratio: 20% min
High speed switching: t r, tj = 4.us typ
Economical, compact, dual in-line plastic package
Interface circuit for various instruments and
control equipment
Chopper circuits
Computer and peripheral manufacture
Pulse transformers
Data communication equipment
( 0.39)
Absolute Maximum Ratings
TA = +25°C
Diode
Reverse Voltage, VR
3.5
~
Forward Current (DC), 'F
0.5
4.4&
Power Dissipation, Po
Peak Forward Current (300)Ls, 2% duty cycle), IF (peak)
~'~fD
0.5
(0.02)
2.5 Min
(0.098 Min)
*
I
30V
70V
Power Dissipation, Po
Package Dimensions In Millimeters (Inches)
B3-000421A
3A
Collector to Base Voltage, VCDO
Collector Current, Ic
I
150mW
Transistor
Collector to EmlHer Voltage, VCEO
EmlHer to Collector Voltage, VECO
2.54
1+(0.1)-.1
5.0V
BOmA
7V
100mA
150mW
Isolation Voltage 1, BV
2500VOC
Isolation Voltage1, BV
2000VAC
Storage Temperature, TSTG
Pin Connection
Operating Temperature, TOPT
Lead Temperature (Soldering lOS)
Total Power Dissipation, Py
(Top View)
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
aa-000385A
5-3
250mW
NEe
4N25
Test circuit for switching time
Electrical Characteristics
TA = +25°C
Umlts
Parameter
Symbol
Min
Typ
Max
Unit
Test
CondHlons
Diode
Forward Voltage
VF
1.1
1.4
V
IF
Forward Voltage
VF
1.2
1.5
V
IF
Reverse Current
IR
10
pi.
Junction
Capacitance
Transistor
Collector to
Emitter
Dark Current
C
50
Pulse Input
= 10mA
= 50mA
VR = 5V
pF
V = 0,
f = 1.0MHz
nA
VCE = 10V,
IF = 0
0----..,
1
. . - - - -... Vee
=5.0V
PW = 100".
Duty Cycle = 1/10
F - - - -.... VOUT
IF
son
B3-000399A
50
ICED
Ic = 2mA,
VCE = 5.0V
DC CUrrent
Gain
hFE
Collector to
Emitter
Breakdown
Voltage
BVCEO
30
60
V
Ic = 1mA,
18 = 0
Collector to
Base Breakdown aVCRO
Voltage
70
120
V
Ic = 100pl.,
IE = 0
Emitter to
Collector
Breakdown
Voltage
7
BVECO
Coupled
Current Transfer CTR
Ratio
(lcilFI
Collector
Saturation
Voltage
VCE(sa!)
Isolation
Resistance
R'·2
500
V
9
20
0.3
1011
Typical Characteristics
TA = +25°C
Diode Power DisSipation vs Ambient Temperature
IE = 100pl.,
18 = 0
%
IF = 10mA,
VCE = 5.0V
V
IF = 10mA,
Ic =2.0mA
0
VIN·OUT =
1.0kV
Isolation
Capacitance
Ct·2
0.8
pF
V = 0,
f = 1.0MHz
Rise TIme
.t,
4
I"S
VCC = 5.0V,
Ic = 2mA,
RL = 10002
Fall Time
tl
4
I"S
VCC = 5.0V,
Ie = 2mA,
RL = 10002
:"'-
150
I
iI
0.
~
.!!
"
100
~
""'-
1.5mW/"C
50
Q
o
o
25
100
75
50
125
I
150
Ambient Temperature [DC]
Transistor Power Dissipation vs Amble"1 Temperature
150
1"'-
Notes: 1. Measuring Conditions: DC or AC voltage for 1 min at
TA = +25'C, RH = 60% between input (pins 1, 2, and 3
common) and output (pins 4, 5, and 6 common).
""-
"'"
2. Test circuit for switching time.
1.SmW/DC
"
o
o
25
50
75
100
Ambient Temperature [OCl
5-4
125
I
150
tt.'EC
~pical
4N25
Characteristics (cont)
TA= +25°C
Collector Current vs Collector to Emitter Voltage
Forward Currenl va Forward Voltage
50
50
V
40
~c
V V
i¥1....-- . /
/
30
TA::;: SD"e
50
-
40
25
-20
;;-
~50'
.§.
30
I ;: V
V
S
§
u
u
'E 20
J
.!l
JJ
/"
10
I II
L.&-V V
o
1.0
0.8
0.6
20
1.4
1.2
1-- ~
20
I
10
.....
IF==5m
o
o
1.6
Pc'" 150mW
'.:....
J'
V-
10
I
I
r-
Y V
8
.........
~
10
Forward Voltage [V]
Collector to Emitter Voltage IV]
Collector to Emitter Oark Current va Ambient Temperature
CUrrent Transfer Rallo va Forward Current
10~
160
140%
IF-O
~
140
~
1.=0
C
1~
§
u
VeE=24V ~
~
VeE::: 10V
100n
..t
/
IOn
//
u
In
~
V
I
//
l!
I
I;'
~ 120
//
o
25
//
~
50
!
u
I
75
Ambient Temperature
100
~
40
V
/ . ~~
--
[Gel
Normalized Output Current va Ambient Temperature
II
I'"
-
V~
-
38%
~
r-
~f-'
o
1'1"-
60%
/
0
o
90%
"..vV VVV/
0
8
20
100
115%
V
VeE = 5V
0.5
50
10
I
100
Forward Current [rnA]
Normalized Output Current VI Base Resistance
1.0
Ia
.....-
C
~
a;;
J
J
~
0
---- --,..-
-1--1-
~
... .....::.....,,,
... ,,'
Normalized to 1.0 at Rs == X
IF:= 2DmA, Vee ::: 5V
IF= 10mA, VeE = V
,-'
0.5
".~
~
0.51--+--+--I--1--+--""T'---.--1--+---i
Q
Z
1--+--+--I--1--+---+--I--r--+---i1
-25
25
50
75
o
100
100
200
300
400
500
x
I
(Base open)
Ambient Temperature lOCI
Base Resistance [kO]
5-5
ttiEC
4N25
Typical Characteristics (cont)
TA= +25°C
Switching TIme
Collector Current va Collector Saturation Voltage
100
'IS
LOad Aeslatlnce
100
50
C'
oS
.....--
10
-
c
IF - 40mA
E
a
s
/
.
~
2DmA
E
10mA
1=
SmA
;i!
./
"
,,
I
, f
o
0.1
0.2
0.3
0.4
0.5
50
300
100
Collector to Emitter Breakdown Voltage VI BaH Realslance
~
2mA
SmA
,!!
~
Ic==10mA
~
i!.,
,!!
~ 0.6
c
i
\
0.2
I"-
o
1\ f\
r-:::: t-
1\
"
t-.
t-..
1--
0.5
10
80
1-
I
50
100
RL
0
~ \kl~ '\
son
500n~
60
100n
\
~
.\ V
f\
40
Z
20
1k
10k
~
o
100
200
300
888e Resistance [kO]
~
~
50
s
Frequency Response
~~
(IE - 1.DmA)
S
Forward Current [mAl
100
---
I"'
\
OA
S
t
r-
8.
1mA
3k
1k
100
I I I
0.8
O.SmA
5DO
Load R,"lltonee [ClI
CT~: i15~
~
I
0.5
0.6
at10mA,5V
...~
2QmA
I'
J
Saturation Vollage VI Forward Current
~
~
E
1=
1.0
~
~
IF
1,
Collector Saturation Voltage [V)
..
Vee =5V -
II:
0.1
~
"
,;
// j ' . /
~
~
10
100k
I
SOOk
Frequency [Hz]
5-6
500
I
00
(BaH ope":
fttfEC
6N136
HIGH SPEED
PHOTO COUPLER
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The 6N136 is a high speed photo coupler containing
GaAsP light emitting diode and a PN photo diode connected to a high speed transistor. The CTR is 15% min.
o
o
o
High isolation voltage: 3000Voc min
High speed response: tpHL, tpLH = 300ns typ
Compact, dual in-line plastic package
Applications
o
Package Dimensions
o
o
o
o
Interface circuit for various instruments and
control equipment
Floating power supply feedback networks
Computer and peripheral manufacture
Pulse transformers
High speed digital and analog line receivers
Absolute Maximum Ratings
TA = +25°C
Diode
Reverse Voltage, VR
·00
'Jl'
3,5:1::0.5
4.4 Max (0.138)
(0.173 Max)
~
i
2.5 Min
(0.09: Min)
l
_
_
1.2 (0.047)
.. ·1..
I I~O~1~
1'"
25mA
Power Dissipation, Po
45mW
Detector
Supply Voltage, Vcc
-O.5V to + 15V
Output Voltage, Vo
-O.5V to +15V
Output Current, 10
8mA
5V
05
(0.02)
1
5V
Forward Current, IF
Emitter to Base Voltage, VEB!!
Power Dissipation, Po
•
Package Dimensions In Millimeters (Inches)
IsOlation Voltage 1, BV
100mW
3000Voc
83·0Q042QA
Pin Connection
Output
Function
PIN
Input
Input
Output
1.
NC
2.
Anode
3.
Cathode
4.
NC
5.
Emitter
6.
Vo
7.
Base
8.
Vee
83-00041OA
5-7
Storage Temperature, TSTG
-55'C to +125'C
Operating Temperature, rOPT
-55°C to +100'C
II
ftt{EC
6N136
Electrical Characteristics
TA = +25°C
Measuring circuit
Umits
Parameter
Symbol
Min
Tvp
Max
Unit
Vee"" sv
RL
Diode
Forward Voltage
VF
1.43
1.7
V
Reverse Current
IR
0.111
10
ILA
Forward Voltage
Temperature
1>VF/1>T
Coefficient
Capacitance
Pulse Input
Test
Conditions
= 16mA
VR = 5V
IF
mV/oC IF
-1.51
VO Monitor
= 16mA
IF Monitor
CT
60
IOH1
3
pF
V = 0,
f = 1MHz
nA
IF = OmA,
Vee = 5.5V
Vo = 5.5V
JLA
IF = Oma,
Vee = 15V
Vo = 15V
Detector
High Level
Output Current
High Level
Output Current
IOH2
DC Current Gain
hFE
500
100
I~~
I
I
I
I
vo
Vo = 5V,
10 = 3mA
120
!
Coupled
%
IF = 16mA,
Vee = 4.5V
Vo = 0.4V
V
IF = 16mA,
Vee = 4.5V
10 = 2.4mA
50
JLA
IF = 16mA,
Vo = Open,
Vee = 15V
leeH
0.111
JLA
IF = OmA,
Vo = Open,
Vee = 15V
Isolation
Resistance
Rj.2
1012
n
VIN·OUT
1kV
Isolation
Capacitance
Cj-2
0.7
pF
V = 0,
f = 1MHz
Propagation
Delay Time
to Low
Output Level
tpHL2
IF = 16mA,
Vee = 5V
RL = 1.9k!ll
4.1kn
Propagation
Delay Time
to High
Output Level
tpLH2
IF = 16mA,
Vee = 5V
RL = 1.9k!l/
4.1kn
Current Transfer
Ratio
CTR
Low Level
Output Voltage
VOL
0.1
Low Level
Supply Current
leeL
High Level
Supply Current
15
22
0.4
0.31
0.81
.05
1.5
ILS
0.31
0.81
1.5
ILS
.05
tpHL
tpLH
83-0004118
=
Notes: 1. Measuring Conditions: DC voltage for 1 min at TA =
+25°C, RH = 60% between input (pins 1, 2, 3, and 4
common) and output (pins 5, 6, 7, and B common).
2. Measuring circuit.
5-8
~EC
6N136
Typical Characteristics
TA = +25°C
Output Current vs Output Voltage
Forward Current vs Forward Voltage
10
100
,/
//
10
!
1
u
1!
~
/
of
0.1
/
V
/
V
/,
r..
~
I
a
I
0.01
1.1
----
25mA
r--
1.2
1.3
1.4
1.5
1.6
20m A
15mA
lOrnA
IF = SmA
o
10
Forward Voltage [V]
Output Voltage [V]
High Level Output Currenl vs Ambient Temperature
Output CUrrent vs Forward Current
1000
!
100
0
~
u=
~
//
10
0
il
!I
/
V
/
.!§.
E
;; 0.5
~
0
0.3
./
0.2
.#
w/ '
25
50
75
1"-
= -50'"C
i'~A J 1do·b
I
Normalized Output Current vs Ambient Temperature
1.2
]~r:f
\1\
1.0
E
Va
\
§ 0.8
u
;;
1\ \
\ \
\ ~
\
\/
"-
~
0
VRLT 1.•KIl
...~
I
0.6
----
---
~
IF= 16mA
~
Vee = 4.SV
Vo = O.4V
Z
"'l
15
20
I
25
Forward Current [rnA]
0.2
o
-50
-25
25
50
Ambient Temperature rOC]
5-9
r--....
Normalized to 1.0 at
TA = 2SC'C
~ 0.4
~RT-4.1KI!l
10
20
10
Forward Current [rnA]
+5V
-~
II
=, 25tC
1
100
Output Voltage vs Forward CU"ent
o
I"\TA
~'
Ambient Temperature rOC]
o
Tt
\
0.1
0.1
-25
/~
~~
~
=
U
.c
f'"
~:;;
;;'
75
I
100
NEe
6,N136
~plcal
Characteristics (cont)
TA= +25°C
Propagation Delay Time vs Load Resistance
Propagation Delay Time va Ambienl Temperature
5,0
600
3.0
IPLH,
,.V
;.
~
500
!
e 400
;::
= 5V
= 16mA
Vee
IF
~
,!
"0.2
O.1 1
/
/
~
/
II'..
300
/'
I- -r-
..~
./tPHl
10
20
!
50
--
V--
§
200
:>
~
t> ~
~
Vee = 5V
IF = 16mA
At.. '" 1.9k!l
100
o
-50
-25
25
50
Ambient Temperature lOCI
Load Resistance [kU]
5-10
........
75
;\
~
100
6N137
HIGH SPEED
PHOTO COUPLER
fttfEC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The 6N137 is a high speed photo coupler containing a
GaAsP light emitting diode and an integrated detector
consisting of a photo diode and a high gain linear amplifier
that drives a Schottky clamped open collector output
transistor in a plastic DIP (Dual In-line Package).
o
o
o
o
o
Ultra high speed (50ns typ)
High isolation voltage (3000Voc min)
Low input current requirement (5mA)
Economical, compact, plastic dual in-line package
TTL compatible (5V supply)
Applications
o
o
o
o
Package Dimensions
~
8
9'25±0'51
(0.364)
7
6
o
5
Line receiver
Floating power supply
Computer and peripheral memory
Replaceable with mechanical relays and reed relays
Replaceable with pulse transformer
Absolute Maximum Ratings
TA = +25°C
, +¥m
'-1"
I
3.5± 0.5
4.4 Max (0.138)
(0.173 Max) L -
_
2.5MI"
(0.09:
XMin)
05
(0.02)
1.2 (0.047)
1
5V
Forward Current, IF
10mA
Detector
Supply Voltage, Vee
7V
Output Voltage, Vo
7V
Output Current, 10
50mA
5.5V
Enable Voltage, VE
I I
.. ..I· ,... .
Diode
Reverse Voltage, VR
Power Dissipation, PD
~o~
Isolation Voltage. BVl
Package Dimensions in MIllimeters (Inches)
Storage Temperature, TSTG
83..Q0042OA
Operating Temperature, TOPT
Pin Connection
Output
PIN
Function
1.
Input
Input
Output
NC
2.
Anode
3.
Cathode
4.
NC
5.
GND
6.
Vo
7.
V.
8.
Vee
83-000422A
5-11
85mW
300DVoe
-55'C to +l25'C
O'C to +70'C
II
ttlEC
6N137
Electrical Characteristics
TA = 0 to + 75°C
Electrical Characteristics (cont)
TA = +25°C
Limits
Parameter
Symbol
Min
Typ
Max
Unit
Limits
Test
Conditions
Parameter
Diode
Symbol
Min
Typ
Max
Test
Conditions
Unit
Coupled
Forward Vollage
VF
1.42
1.7
V
iF = 10mA,
TA = 25°C
Reverse Current
IR
0.01
10
pA
VR = 5V,
TA = 25°C
pF
V = 0,
1= 1.0MHz
Capacitance
CT
Detector
High Level
Enable Current
Law Level
Enable Current
60
IEH
-0.8
IEL
-1.2
-2.0
mA
Vee = 5.5V,
VEH = 2.0V
mA
Vee = 5.5V,
VEL = 0.5V
pA
Vee = 5.5V
Vo = 5.5V,
IF = 250pA,
VE = 2.0V
V
Vec = 5.5V,
VE = 2.0V,
IF = 5mA,
10 = 13mA
Coupled
High Level
Output Current
10H
Law Level
Output Voltage
VOL
30
0.4
250
0.6
Law Level
Supply Current
ICCL
10
18
mA
Vec = 5.5V,
VE = 2V,
IF = 10mA
High Level
Supply Current
ICCH
7
15
mA
Vec = 5.5V,
VE = 0.5V,
IF = OmA
Current
Transler Rallo
CTR
600
%
IF = 5mA,
Vee = 5V
RL = loon
Isolalion
Resistance
R,-2
1012
n
VIN·OUT =
lkV
Isolation
Capacitance
Cl-2
0.7
pF
V = 0,
f = lMHz
Propagation
Delay Time
to Low
Output Level
tpHL2
50
Propagation
Delay Time
to High
Output Level
tpLH 2
50
Propagation
Delay Time of
Enable to Law
Output Level
tEHL
15
ns
Propagation
Delay Time of
Enable to High
Output Level
tELH
30
ns
75
ns
75
IF = 7.5mA,
Vee = 5V
RL = 350n,
CL = 15pF
ns
IF = 7.5mA,
Vce = 5V
RL = 350n,
VEH = 3V
CL = 15pF
Notes: 1. Measuring conditions: DC voltage for 1 min at TA = 25°C,
RH = 60% between input (pins 1, 2, 3, 4 common) and
output (pins 5, 6, 7, 8 common)
2. Measuring circuit
Measuring circuit
Pulse Input
r--r--.-----o Vee ~ 5V
PW "" 1,u.s
Duty Cycle = 1110
RL
~
35011
~ - - - (IF :5~~~A)
~ ----------1--(IF~7;;~mA)
Inpu.!... __ :
o!
1.....
·----
1
IF Monitor 0--.--1
I--+--t--<>vo Monitor
Output
47n
I
I
I
1
1
I
I
I
- - - - - - - r-1.5V
I I . . - - - - - - - . . . J J - VOL
I
I
I
I
I
I
I
-i
"CL Is approximately 15pF, which Includes probe and stray wiring capacitance.
I
1
5V--~I~
tpHl
r--
-1
I
tpLH
~
83-0004238
5-12
NEe
6N137
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Output Current vs Output Voltage
100
;;:
50
/
10
§.
"=
~
"
...
I
o. 1
/
/
0.01
1.1
/
/
/
10~\
rnA
8mA
r-
/
-r \
40
\
V
;;:
,,
\
~A
§.
E 30
~
=
,,
"= 20
0
i
mA
10
1.2
1.3
1.4
o
1/
IF - 2mA
10
Forward Voltage [V)
Output Voltage [VI
High Level Output Current vs Ambient Temperature
Output Voltage vs Forward Current
5V
t"-..
\\'"
I--- I---
\ 1\\
I---
\
r--- r----
40
60
\
~!~O
~~
I\.
"
L
Vo
I
II
RL = 100n
"
-......
r-
~
I
j:l
10
100
Forward Current [mAl
Ambient Temperature rOC)
Output Voltage vs Forward Current
"
I\.
"\
3500
5100
I
80
,ik
IF!}=:
\
1
20
,
d
"\
\\
1
Propagation Delay Time vs Load Resistance
1000
Vee = 5V
IF = 7.SmA
Vee = 5V
RL
\.
= 350n
500
~
!
300
;:
200
~
\\
i
~\
,,\
0
c
o
100
0
100°C
~\ ~~~:g
~ ~TAI O°C
~ ..\..
o
-- ----- ---
-----"'- '"
o
1.6
1.5
~
o
Pc = 85mW
" ...
100
O. 1
,
~
1000
10
--- -- ---
~
g-
50
£
30
a.
I
10
I
20
10 =-----~~--~~~~~,~k----~--~~~~~~,0k
100
Load Resistance [OJ
Forward Current {mAl
5-13
NEe
6N137
~plcal
Characteristics (cont)
TA= +25°C
Propagation Delay nme va Forward Current
Prppagatlon Delay Time vs Ambient Temperature
,
100
Vee = 5V
500
Vee = 5V
RL = 350n
RL - 350n
i
IF
. -....
300
I
~
'i1
BO
E
200
E
100
I: ,.,
tpLH
-
tPHLO-
F
-
i
c
---
-
o
Ii!
10
15
Forward Current [mA]
20
V
IPLH
--
...".,
,/'
o
20
40
Ambient Temperature [OC]
5-14
---
20
-20
25
.,.V
40
~
I
20
10
I...
V
'PfiL
60
= 7.SmA
60
80
MCT2
PHOTO COUPLER
SINGLE TRANSISTOR
fttfEC
NEC Electronics Inc.
NEPOC SERIES
Description
Features
The MCT2 is an optically coupled isolator containing a
GaAs light emitting diode and an NPN silicon photo
transistor.
o
o
High isolation voltage: 2000VAC, 2500VDC
High transfer ratio: 20% min
" 0 High speed switching: t r, tl = 4/Ls typ
'0 Economical, compact, dual in-line plastic package
Applications
Package Dimensions
1A M
9.25 " 0.5
(0.364)
6
5
4
o
o
o
o
o
~ .1
(~ 0.39)
r
Interface circuit for various instruments and
control equipment
Chopper circuits
Computer and peripher~1 manufacture
Pulse transformers
Data communication equipment
Absolute Maximum Ratings
TA = +25°C
Diode
Reverse Voltage, VR
5.0V
Forward Current (DC), IF
Power' Dissipation, PD
150mW
Peak Forward Current (300I-'S, 2% duty cycle), IFlpeak)
0.5
(0.02)
2.54
30V
Collector to Base Voltage, Vceo
70V
Collector Current, Ic
I
hO.l)+i
150mW
Isolation Voltage 1, BV
83-000421A
2500VOC
Isolation Voltage1, BV
Pin Connection
2000VAC
Storage Temperature, TSTG
-55°C to +150°C
Operating Temperature, TOPT
-55°C to + 100°C
Lead Temperature (Soldering las)
Total Power Dissipation,
(Top View)
1.
2.
3.
4.
Anode
Cathode
Ne
Emitter
5. Collector
6. Base
83-0003B5A
5-15
7V
100mA
Power Dissipation, Po
Package Dimensions In MIllimeters (Inches)
3A
Transistor
Collector to Em Iller Voltage, VCEO
Emitter to Collector Voltage, VEeo
I
80mA
Pr
260°C
250mW
II
ttiEC
MCT2
Electrical Characteristics
TA = +25°C
Test circuit for switching time
Umlts
Parameter
Symbol
Min
Typ
Max
Unit
Test
CondHlons
Diode
Forward Vollage
VF
1.1
1.4
V
'F = lOrnA
Forward Vollage
VF
1.2
1.5
V
IF = 50mA
Reverse Currenl
'R
10
jAlI
VR = 5V
pF
V = 0,
I = 1.0MHz
nA
VCE = 10V,
'F = 0
Junction
Capacilance
Transistor
Colleclor 10
EmlHer
Dark Currenl
50
C
PW
0----..,
1
~ 100~s
Vcc~
, - - - - - -....
5.0V
Duty Cycle = 1110
+"----'" VOUT
IF
son
= 100n
RL
83-000399A
50
ICED
DC Current
Gain
Colleclor 10
EmiHer
Breakdown
Voltage
Pulse Input
Ic = 2mA,
VCE = 5.0V
700
BVCEO
30
Colleclor 10
Base Breakdown BVC80
Voltage
70
EmlHerlo
Collector
Breakdown
Voltage
7
V
60
120
V
V
Ic = lmA,
18 = 0
Ic = 100jAll,
'E = 0
Typical Characteristics
TA = +25°C
Diode Power Dissipation VI Ambient Temperature
150
'E = 100jAll,
18 = 0
i
s
c
Coupled
Currenl Transler CTR
Rali02
(lcIfF)
Colleclor
Salurallon
Voltage
VCE(sat)
Isolalion
Reslslance
RH
20
0.3
1011
0/0
'F = lOrnA,
VCE = 5.0V
V
'F = lOrnA,
Ic =2.0mA.
0
VIM·OUT =
1.0kV
Isolation
Capacitance
CH
0.8
pF
V = 0,
1= 1.0MHz
Rise Tlme 3
Ir
4
ILS
Vce = 5.0V,
Ic = 2mA,
RL = 1000
Fall Time 3
'I
4
ILs
Vcc = 5.0V,
IC = 2mA,
RL = 1000
I;
I~ "\
100
~
"""
1.5mW/oC
Q
3.
~
Q
50
o
o
.....
25
50
I
~
100
75
125
150
Ambient Temperature [OC]
Transistor Power DlsslpaUon VI Ambient Temperalure
150
"" "
Notes: 1. Measuring Condilions: DC or AC voltage for 1 min at
TA = +25'C, RH = 60% between input (pins 1, 2, and 3
common) and output (pins 4, 5, and 6 common).
"\
"
2. CTR rank: K: 80% - 210%, L: 50% - 110%, M: 20%70%.
3. Test circuit lor switching time.
o
o
25
50
1.SmWrC
75
~
100
Ambient Temperature rOC]
5-16
125
I
150
NEe
MCT2
~pical Characteristics (cont)
TA= +25°C
Collector Current vs Collector to Emitter Voltage
Forward Current vs Forward Voltage
50
50
V
V V
40
Yr.
.-/
TA - 80°C
50
:;'
.s
~20
~50'
E 30
V
§
u
LV
S 20
~
I
u
IJ J
b '/ V
o
0.6
0.8
1.0
I
g
1.4
1.2
' .... ~
Pc
=
150mW
3
V
10
J
~
l
V V- i"'"""
'il
/11
10
-
40
25
..........
t::""
20
I
10
IF
o
SmA
o
1.6
10
Forward Voltage [V]
Collector to Emiller Voltage [V]
Collector to Emitter Dark Currenl vs Ambient Temperature
CUrrent Transfer Ratio vs Forwarc(Currenl
10~
160
140D/O
IF 0
Is= 0
5:
E
140
~
1~
~
VCE~24~~
i!
VeE"" 10V
<'l
100n
~
//
E
w
S
S
.l!
~
//
.:I
/'
10n
//'
li
ln
o
25
//
.
0
V
~
VeE
'"a:
100
I
80
c
60
.:I
40
!=
115%
120
90%
I
75
V
V
V
~
o
V
......-:t:::
20
100
~,v
VL
~
50
V
= 5V
.~
o
~~
~~
.:I
'5
~
~
0
0
....
Normalized to 1
TA ~ 25"C
IF = 10mA
V
E
~
.
..... ~ ~ ~
V
<
50
I
100
-
Normalized Output Current va Base Resistance
~ ~ ~ W/h ",..
~ ~ W); W); ~
~
~
§
WI'
38%
10
1.0
~
V
Forward Current [rnA]
Normalized Output Current vs Ambient Temperature
E
~
0.5
Ambient Temperature [OC)
II
I'
60%
-I--
r-
~F-
L
1'1'
.:I
~~
~
0
~
~ S,
........ . ~
L
~-I-
--1
NonnaUzed to 1.0 at ~B - X
IF = 20mA, Vee = 5V
IF= 10mA, Vee = V
/'
0.5
~
VeE = S.OV
~
0.5
0
z
Z
-25
25
50
75
I
100
Ambient Temperature I"C}
o
100
200
300
400
Base Resistance [kO]
5-17
500
I
'JC
(Base open)
ftlEC
MCT2
Typical Characteristics (cont)
TA= +25°C
Collector Current VI Collector Saturation Vollage
Switching
:c
S
G
/
s
./
-
If
IF- 40mA
~
20mA
~
10mA
II
.;
~
a
0.2
0.1
0.3
0.4
0.5
0.6
50
100
300
I I I
~
j
~
c
Ie =10mA
~
0
0.6
li!
~
.
\
0.4
S
.!!
\
0.2
1"--1--
~
I\,
1\
-=:::: t- t-
0.5
10
'"
BO
RL
/;
60
S
~
40
= 1kO.
I
50
100
son
5OO0~
1000
[\\ ~
\ V
20
lk
10k
~
o
100
200
300
Base Resistance [kn)
r-r-,
1\1\
1\
50
s
S
Frequency Response
~ l'.
(IE - 1.0mA)
w
Forward Current [mAl
100
--
I
~
t-
o
z0
...........
t
O.B
SmA
3k
100
at 10mA, 5V
2mA
lk
Collector to Emitter Breakdown Voltage va Base Resistance
CT~: j'5~,
lmA
500
Load Resistance [CI]
Saturation Voltage VI FOlW8rd Current
O.SmA
I
0.5
~
I ,
1.0
.s
20mA
"
~
Collector Saturation Vollage [V]
li
=
II:
0.1
~
~
IF
~
1=
,,
c
Vee =5V -
V
10
1=
SmA
j~./-
//
~
;i!
Load Resistance
50
--
10
C
~
~
nme VI
100
100
lOOk
I
SOOk
Frequency [Hz]
5-18
500
I
oc
(Base open)
NEe
NEe Electronics Inc.
PS2002B
PHOTO COUPLER
DARLINGTON TRANSISTOR
NEPOC SERIES
Description
Features
The PS2002B is an optically coupled isolator containing a
GaAsP light emitting diode and an NPN silicon
Darlington-connected photo transistor.
D High-voltage isolation: 2500Voc min
D High transfer ratio: 100% min
D Economical, compact, plastic dual in-line package
Applications
Package Dimensions
1A M
9.25 ± 0.5
(0.364)
"5
4
r
6
D
D
D
D
ECR
Automat
Replacement of pulse transformers
Replacement of mechanical and reed relays
Absolute Maximum Ratings
",.1
( 0.39)
TA = +25°C
Diode
Reverse Voltage, VR
7.0V
Forward Current, IF
50mA
Power Dissipation, Po
Transistor
Collector to EmlHer Voltage, VCEO
Collector Current, Ic
Power Dissipation, Po
Isolation Voltage1, BV
0.5
(0.02)
I
2.54
I
i+(0.1)..J
Package Dimensions in MIllimeters (Inches)
83-DO0421A
Pin Connection
(Top View)
1. Anode
2. Cathode
3. NC
4. Emitter
5. COllector
6. NC
83-000385A
5-19
100mW
40V
50mA
100mW
2500VOC
Storage Temperature, TSlG
-55'C to +125'C
Operating Temperature, TOPT
-55'C to +100'C
NEe
PS2002B
Electrical Characteristics
Typical Characteristics
TA = +25°C
TA = +25°C
Limits
Parameter
Symbol
Min
Typ
Max
Unit
Test
Conditions
Diode
FOlWard Voltage
VF
1.9
V
IF = 5.0mA
Reverse Currenl
IR
2.0
IJ.A
VR = 4.0V
Junction
Capacilance
C
pF
V = 0,
1= 1.0MHz
Transistor
Colleclor 10
Emiller
Dark Currenl
DC Currenl
Gain
100
400
ICED
nA
!.!!
100
j
VCE = 10V,
IF = 0
0.
50
-Il
.ec
o
100
VCE(sat)
Isolation
Resislance
RH
Isolation
Capacilance
Cl-2
1.2
1011
0.8
100
I,
120
It
o
%
IF = 5.0mA,
VCE = 2.0V
V
IF = 5.0mA,
Ic =2.0mA
n
VIN-OUT =
1.0kV
pF
V = 0,
1= 1.0MHz
§'
IJ.s
Vee = 5.0V,
IF = 10mA,
RL = 100n
I
IJ.s
Vec = S.OV,
IF = 10mA,
RL = 100n
'"'"
lmW/'C
Ic = 4.0mA,
VCE = 2.0V
5000
hFE
Collector
Saluration
Voltage
Fall Time 2
~c
c
Coupled
Currenl Transler CTR
Ratio
(lcilF)
Rise Tlme 2
Diode Power Dissipation VI Ambient Temperatur~
150
25
50
'"
75
100
125
I
150
Ambient Temperature ["C)
Transistor Power Dissipation vs Ambient Temperature
150
g
c
100
~
~
0
0.
Notes: 1. Measuring Conditions: DC or AC voltage fa, 1 min at
TA = +25°C, RH = 60% between input (pins 1, 2, and 3
common) and output (pins 4, 5, and 6 common).
~
50
~
o
o
2. Test circuit for switching time.
'"
25
1mW/oC
~
50
'"
75
100
125
Ambient Temperature [OC]
Test circuit for switching time
Pulse Input
~----..,
Forward Current VB Forward Voltage
r-....,.::----..,Vcc~
5V
1mS]
1;:
PW = 1ms
Duty Cycle = 1/10
IF
-I-.,--~VOUT
201-----j----+-
S
110~---+_---_r-~~~~~--~--__i
83-00Q4GGA
Forward Voltage [V]
5-20
I
150
~EC
Typical Chall'actell'isltics (ccnll)
TA= +25°C
Collector CUrrent 'IS Collector to Emlltor Voltage
~
I--- ....
I
30
10,000
IF - 0
"
I
40
!
Colleclor to Emiller Cark Current 'IS Ambient Temperature
..,., ~51\
50
,
,2
,(t-
I
8
........
.I! 20
~
.3
10
§
u
~
. ..
U
~
E
.!l
15
u
3
o
'F
o
V
2mA
0.1
-20
/
/
!
j
20
15
0
V
10
o
V
V
/
~
/
II
~
Z 0.4
10
12
14
16
18
I
Ambient Temperature [DC]
Collector Current 'IS Collector Saluratlon Voltage
Collector Saturation Voltage vs Ambient Temperature
1.2 , - - - , - - , - - , - - , - - , - - , - - , - - , - - - - - - ,
50
~
15
//..-
,....
.
10
1!:
~ ~5mA
10
~
3
~ 0.6
15
" 0.4
/, r//
ffl.V
0.6
0.7
r--+---t--+---t---+---t---j--t--.,-----j
-
t---t----t----t--t---t----t----t--t---t----j
~
0.5
0.1
0.5
1.0
~~ 0.8 ~F""':~==~~f=~=~;;:~=+=l:J~d
/#. V
~
15
IF==5mA
le= 2mA
~
h V./
u
U
IF=mA, Vee= 2.DV
~2~0-~--L--~--L-~--L--~--=-~-~80
20
100
<'
t---t----t-----j
Normalized to 1.0 at TA == 25°C
0.21--+--+--+--,-..,---.---,--,--,---11
Forward Current [rnA]
S
80
'[
~
1
o
60
il
V
V
40
1.4 I--I--I--I--I--I--I--I--t-=~m
1/
30
20
1.6 , - - - - , - - - - - , - - , - - , - - - - , - - - - - , - - , - - , - - - - , - - - ,
VeE = 2V
C
s
V
Normalized Output Current vs Ambient Temperature
Collector Current vs Forward Current
40
V
Ambient Temperature lOCI
Collector to Emitter Voltage [V]
50
L
/
./
10
w
.I!
5
'{
100
C
....
0
VeE = 10V
1000
;;
Pc - 100mW
O
IB~
<'
S
0.8
0.9
1.0
t---t----t----t--t---t----t----t--t---t----j
t----j~~--__+--_+---r----j---1---T---r_---j1
0·~2::0:-.......J.--:---~--:2=0-~---:4':-0-.......J.---:6::0-.......J.--7.80
1.1
Ambient Temperature rOC]
Collector Saturation Voltage [V]
5-21
t-IEC
PS2002B
5-22
!VEe
PS2004B
PHOTO COUPLER
DARLINGTON TRANSISTOR
NEC Electronics Inc.
NEPOC SERIES
Description
Features
The PS20048 is an optically coupled isolator containing
a GaAs light emitting diode and an NPN silicon Darlington photo transistor in a plastic DIP (Dual In-line
Package).
D
D
D
D
High-voltage isolation: 2500V min
Ultra high transfer ratio: 1300% min
High output current: 200mA max
Economical, compact, plastic dual in-line package
Applications
Package Dimensions
1A
9.25 ~ 0.5~
(0.364)
5
4
6
D Copy machine
D Replacement for mechanical and reed relays
D Replacement of pulse transformers
Absolute Maximum Ratings
TA = +25°C
<1>.1
( 0.39)
~
Diode
Reverse Voltage, VR
5.0V
Forward Current, IF
50mA
Power Dissipation, Po
Transistor
Collector to Emiller Voltage. VCEO
200mA
Power Dissipation. Po
200mW
Isolation Volta gel, BV
I
Isolation Voltagel, BV
2.54
I
1+(0.1)+1
Package Dimensions In Millimeters (Inches)
83-000421A
Pin Connection
1. Anode
2. Cathode
3. Ne
4. Emitter
5. Collector
6. Base
83-00Q40QA
5-23
30V
.Collector Current. Ic
Total Power Dissipation. PrOTAL
0.5
(0.02)
100mW
250mW
2500VOC
2000VAC (rms)
Storage Temperature. TST6
-55'C to + 125'C
Operating Temperature. TOPT
-55'C 10 +100'C
II
NEe
PS2004B
Electrical Characteristics
25°C
Test circuit for switching time
TA =
Limits
Parameter
Symbol
Min
Typ
Max
Unit
( Pw ~ 1m.
\)
Duty Cycle == 1/10) ~
Diode
Forward Voltage
VF
1.4
V
IF = 20mA
IF
Reverse Current
IR
5.0
p.A
VR = 4.0V
50H
Junction
Capacitance
C
pF
V = 0,
, = 1.0MHz
nA
VeE = 10V,
IF = 0
%
IF = 5.0mA,
VeE = 2.0V
V
IF = 5.0mA,
Ie =2.0mA
n
VIN-OUT =
1.0kV
Transistor
Collector to
Emitter
Dark Current
100
400
ICED
Coupled
Current Trans'er CTR
Ratio
(1c;lIF)
Colleclor
Saturation
Voltage
1300
1.2
VeE!sat)
83-000401A
Typical Characteristics
TA = +25°C
Isolation
Resistance
R1-2
Isolation
Capacitance
C1-2
0.8
pF
V = 0,
, = 1.0MHz
I,
100
p's
Vee = 5.0V,
IF = 5.0mA,
RL = 100n2
i'
p's
Vee = 5.0V,
IF = 5.0mA,
RL = 100n2
i
Rise Time
Fall Time
Vee == S.ov
r---~
Pulse Input ~-----,
Test
Conditions
I,
1011
250
Diode Power Dissipation vs Ambient Temperature
200
oS
.Sc
100
............ """
~
0
Notes: 1. Measuring Condilions: DC or AC voltage for 1 min at
TA = +25°C, RH = 60% between input (pins 1, 2, and 3
common) and output (pins 4, 5, and 6 common).
...
............
1mWrC
-......
~
.2
c
............
2. Test circuit for switching time.
o
o
40
20
I
100
80
60
Ambient Temperature rOC]
Transistor Power OisslpaUon vs Ambient Temperature
200
i'...
i.
"" i'... ..... r--..,
i
~
c
;
~mWI'C
I"....
100
~
g,
"
i
~
o
o
20
40
60
Ambient Temperature [QC]
5-24
80
I
100
NEe
PS2004B
Typical Characteristics (cont)
TA= +25°C
Forward Current vs Forward Vollage
Collector Currenl vs Colleclor 10 Emitter Voltage
100
f--
1~/
..
80 r - 1-0/
7/
C
60
f - - f-6
.§.
r10 ~ f'-.
f'/ V
V/ / '
'/
~
8
~
V
40
~. ,
,
p~ ~ 200 ~w
,
3
,
f..-- ~
...............
" ,
"
~
'5
u
20
IF=1mA
~
o
o
Colleclor 10 Emitter Vollage IV]
Forward Voltage [V]
Collector to Emitter Dark Current vs Ambient Temperature
..
.:.
Collector CUrrenl vs Forward CUrrent
100,000
100
10,000
;;
~
8
i!
1,000
~
100
/
~
w
/
.9
E
~
10
II
1
-20
/
20
/
/
V
..
80
C
60
,/
1/
/
.§.
8
E
g
'5
40
/
20
60
o
80
/
o
10
Normalized Output Currenl
1.0
~
0
".~
IF"" 5.0 rnA
VeE = 2.0 V
-----
~
~
-
/
8
'5
~
0
VI
Base Resistance
_--- f---:::::::-
Normalized to 1.0
at TA = 25°C
---
I
Forward Current [rnA]
Normalized Output CUrrent vs Ambient Temperature
r-- I--
II
/
./
Ambient Temperature rOC]
~
8
/
~
IF == 0
18= 0
VCE == 10V
u
40
Vee = 2.0 V
I
Normalized to 1.0 al Ra =X
- - :IF:= 5.0mA, Vee = 2.0 V
- - - :IF = lOrnA, VCE = 2.0 V
0.5
"
.~
~
0
z0
Z
0.5
-20
20
40
Ambient Temperature
60
I
80
lac]
o~-----------+-------+-----+---+--~--~~~~I
x
1
Base Resistance [MOl
5-25
(Base open)
NEe
PS2004B
5-26
NEe
NEG Electronics Inc.
PS2005B
PHOTO COUPLER
HIGH IMPACT CURRENT
SINGLE TRANSISTOR
NEPOC SERIES
Description
Features
The PS20058 is an optically coupled isolator containing a
GaAsP light emitting diode and an NPN silicon photo
transistor.
o
o
o
o
o
Package Dimensions
High-voltage isolation: 2500V
Large forward input (current): 150mA max
High transfer ratio: 10% min
High speed switching: t r, tf = 5~s typ
Economical, compact, dual in-line plastic package
Applications
1;:-9.25" 0.5A1
(0.364)
6
5
4
o
o
Absolute Maximum Ratings
0/>.1
r
Telephone/telegraph line receivers
Replacement for reed relays
TA = +25°C
(q, 0.39)
Diode
Reverse Voltage, VR
150mA
Power Dissipation, PD
200mW
Transistor
Collector to Emitter Voltage, VCEO
Collector Current, Ic
Power Dissipation, Po
Total Power Dissipation, PrOTAL
0.5
(0.02)
2.54
I
hO.1)+!
83-Q00421A
Pin Connection
(Top View)
1.
2.
3.
4.
5.
6.
Anode
Cathode
NC
Emitter
Collector
Base
83-000385A
5-27
150mW
250mW
Isolation Voltage1, BV
2500VDC
2000VAC (rma)
Dperatlng Temperature, TOPT
Package Dimensions In Millimeters (Inches)
30V
50mA
Isolation Voltage1, BV
Storage Temperature, TSTG
I
7.0V
Forward Current, IF
ttiEC
PS2005B
Electrical Characteristics
+25°C
Test circuit for switching time
TA =
Umlts
Parameter
Symbol
Min
Tvp
Max
Unit
Test
Conditions
Diode
Forward Voltage
VF
2.0
V
IF = 100mA
Reverse Current
IR
5.0
p.A
VR = 4.0V
Junction
Capacitance
C
pF
V = 0,
1= 1.0MHz
Transistor
Collector to
Emitter
Dark Current
DC Current
Gain
250
200
ICED
Collector
Saturation
Voltage
VeE(Sat)
Isolation
ReSistance
R102
Isolation
Capacitance
C.-2
10
0.3
1011
0.8
pw
1
~---...,
~ 100~s
r-----<>
Vcc~
5.0V
Duty Cycle == 1/10
'F
50n
VeE = 10V,
IF = 0
B3-QO0399A
Ie = 4.0mA,
VeE = 5.0V
400
hFE
Coupled
Current Transler CTR
Ratio
(lellFI
nA
Pulse Inpul
%
IF = 100mA,
VeE"" 5.0V
V
IF = 100mA,
Ie =4.0mA
0
VtN-OUT =
1.0kV
pF
V = 0,
1= 1.0MHz
Rise Time
Ir
5.0
P.s
Vee = 5.0V,
IF = 100mA,
RL = 10002
Fall Time
t,
5.0
P.s
Vee = 5.0V,
IF = 100mA,
RL = 10002
Typical Characteristics
TA = +25°C
Diode Power Dissipation vs Ambient Temperature
200
i'..
'i'..
§'
"
§
0
i
"=
i5
~mWfOC
.........
100
"-
~0
0.
0
Notes: 1. Measuring Conditions: DC or AC voltage for 1 min at
TA = +25'C, RH = 60% between input (pins 1, 2, and 3
common) and output (pins 4, 5, and 6 common).
-g
~
i5
2. Test circuit for switching time.
o
o
20
40
60
I
80
100
Ambient Temperature rOC]
Transistor Power Dissipation VB Ambient Temperature
200
1.SmW/OC
§'
§
c
~
t
~
~
100
~
0
0.
I
~
~
o
o
20
40
60
Ambient Temperature [ee]
5-28
I"-..... .......
80
I
100
NEe
11'5200518
Typical Characteristics (cont)
TA= +25°C
Collector Currenl vs Collector to Emiller Voltage
Forward Current vs Forward Voltage
120
---
TA == BODC
60
100
:;'
oS
20
:;'
80
oS
§
0
~
60
0
40
"'0
~
11
l!
of
(
II
~
C
100
\
".
Pc= 150 mW
80
'-
10
40
0
20
;\
IF= 20mA
~
~
0
1.3
~
1.4
1.7
0
1.8
0
10
Forward Voltage [V]
Collector to Emllter Dark Currenl VB Ambient Temperature
Collector Current vs Forward Current
IF:: 0
la=O
VeE = 10V
:;'
S 10,000
V
VCE- 5.0V
/
20
C
~
/
/
:;'
~
1000
w
100
~
oS
c
S
Jj
~
0
10
V
V
/
~
/
/'
a
~
20
./
10
1i
0
/
~
./
40
60
80
40
20
Ambient Temperature [DC]
a
Normalized to 1.0
at TA == 25 c C
IF= 100mA
I---
'5
~
0
)
---
-
Normalized Output Current vs Base Resistance
1.0
-
120
100
80
60
Forward Current [rnA]
Normalized Output Current vs Ambient Temperature
~
!
../
./
1
-20
12
Collector to Emitter Voltage [V]
100,000
a
...
,.;=...
60
VeE"" S.OV
~
C
~
'5
~
0
...
-~,
......
0.5
--t'
f.----
I I
Normalized to 1.0 at Ra""" :::c
- - :IF == 100mA, VeE::o: S.nv
- - _ :IF == SOmA, VeE == S.OV
//
~
0
r-- r--
~
/,""
.1l
~
~
0
z
Z
0.5
-20
20
40
60
o
100
80
200
300
400
Base Reslslance [kO]
Ambient Temperature [0C]
5-29
500
oc
(Base open)
NEe
PS2005B
5-30
~EC
PS2006B/B(1 )
HIGH SPEED
PHOTO COUPLERS
NEC Electronics Inc.
NEPOC SERIES
Description
Features
The PS2006B and PS2006B(1) are high speed photo
couplers containing a GaAsP light emitting diode and a
p-n photo diode connected to a high speed transistor.
o
o
o
o
The CTR are 15%min for PS2006B and 7% min for
PS2006B(1).
High isolation voltage: 3000Voc min
High speed response: tpHL, tpLH = 300ns typ
Compact, dual in-line plastic package
Equivalent to 6N135, 6N136
Applications
o
Package Dimensions
o
o
o
o
Interface circuit for various instruments and
control equipment
Floating power supply feedback networks
Computer and peripheral manufacture
Pulse transformer
High speed digital and analog line receivers
Absolute Maximum Ratings
TA = +25°C
Diode
Reverse Voltage, VR
f
2.5 Min
(0.09: Min)
I
t
1 II
JL"
1.2 (0.047) I
05
(0.02)
,1· , ••
2SmA
Power Dissipation, Po
4SmW
Detector
. 5 : 0 .- 5 0 0
4.4 Max 3
(0.138)
(0.173 Max)
-*--
l
Supply Voltage, Vcc
-O.SV to + 1SV
Output Voltage, Vo
-O.SV to + 1SV
Output Current, 10
SmA
Emitter to Base Voltage, VEBO
~o~
Power Dissipation, Po
Package Dimensions in Millimeters (Inches)
Isolation Voltage1, BV
83-o00420A
Pin Connection
Output
Function
PIN
1.
Input
Input
Output
SV
Forward Current, IF
NC
2.
Anode
3.
Cathode
4.
NC
5.
Emitter
6.
Vo
7.
Base
8.
Vee
83-00041OA
5-31
SV
100mW
3000VOC
Storage Temperature, TSTG
-S5'C to + 125'C
Operating Temperature, TOPT
+55'C to + 100'C
II
NEe
PS2006B/B(1 )
Electrical Characteristics
Measuring circuit
TA = +25°C
Umits
Parameter
Symbol
Min
Typ
Max
Pulse Input
Test
CondHions
Unit
I----.--~
Vee
~
5V .
PW = 100,us
Diade
Forward Vollage
VF
1.43
1.7
Reverse Current
'A
0.01
10
Duty Cycle = 1/10
Forward Vollage
Temperalure
Coelflcient
Capacitance
-1.51
V
'F = 16mA
VoMonitor
mViOC 'F = 16mA
IF Monitor
pF
v = 0,
1= lMHz
500
nA
IF = OmA,
Vee =
Vo = 5.5V
100
pA
'F = DOmA,
Vce =
Vo = 15V
60
CT
51ll
Detector
High Level
Outpul Currenl
3
High Level
Outpul Currenl
DC Current
Gain
'~~
I
I
I
I
Vo
i
Vo = 5V,
10 = 3mA
120
Coupled
Current
Transler Ralio
CTR
15/7
Low Level
OUlpul Voltage
22
0.1
0.4
%
'F = 16mA,
Vec = 4.5V
Vo = D.4V
V
'F = 16mA,
Vec = 4.5V
= 2.4mAI
1.lmA
'0
Low Level
Supply Current
ICCl
50
'F = 16mA,
Vo = Open,
Vcc = 15V
High Level
Supply Current
lecH
0.01
= OmA,
Vo = Open,
Vce = 15V
1012
V,N.OUT
lkV
Isolallon
ReSistance
Isolalion
Capacllance
~·2
83-0004118
'F
0.7
pF
Propagalion
Delay Time
10 Low
Oulput Level
0.31
0.5
0.81
1.5
Propagation
Delay Time
10 High
Oulpul Level
0.31
0.8
0.81
1.5
",5
=
V = 0,
1= lMHz
'F = 16mA,
Vec = 5V
Rl = 1.9k!ll
4.1kn
'F = 16mA,
Vcc = 5V
Rl = 1.9k!ll
4.1kn
Notes: In the "Min", "Typ" and "Max" columns, ligures to the left
and right of the slash represent values for the PS2006B and
PS2006B(1), respectively.
1. Measuring Conditions: DC voltage for 1 min at
TA = +25°C, RH = 60% between input (pins 1, 2, 3, and
4 common) and output (pins 5, 6, 7, and 8 common).
2. Measuring Circuit.
5-32
NEe
PS2006B/B(1 )
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Output Current vs Output Voltage
100
10
,/'
//
10
<'
oS
I
0
V
"2
~
of
0.1
/
/
/
V
2SmA
~
1.2
20mA
~
1SmA
L
1.3
1.4
J
~
1.5
10mA
~
~
0.01
1.1
...-I--"t"""
IF
===
;:;
smA
!
o
o
1.6
10
Output Voltage [V]
Forward Voltage [V]
Output Current vs Forward Current
High Level Output Current vs Ambient Temperature
1000
<'
.:.
100
0
~
vV
0
,
,
0.
10
0
~
~
..,
.!!'
/
V
0.1
-25
25
50
~~
<'
oS
,~
0
,
,
0.
0
./"
l:
",.7
/'
0.3
0.2
I
75
~
0.5
/#
w
-'
~'
\
o
3~f:f
1.0
I
Yo
10
0.8
0
i
\
--
o
I
10
0
0.6
---
50
-------
~
Normalized to 1.0 at
".@!
Iz
ll
1
::\
15
20
Normalized Output Current vs Ambient Temperature
1••KIl,
o
l\i.=I,Jo b
1.2
+5Y
\ \ .,/RlT
\ ~
yR\-4.1K
\
\ / "'l
II
i
-50"'C
Forward Current [rnA]
Output Voltage vs Forward Current
I\\\
\\
\ \
1
1
Ambient Temperature rOC]
--
25 C
Tf
\ I \TA -
0.1
100
~,,-
20
i
25
Forward Current (rnA]
TA = 25"C
IF= 1SmA
0.4
Vee = 4.SV
Vo = O.4V
0.2
o
-50
-25
25
50
Ambient Temperature roC]
5-33
75
100
tt.'EC
PS2006B/B(1 )
Typical Characteristics (cont)
TA= +25°C
Propagation Delay Time va Load Resistance
Propagation Delay Time va Ambient Temperature
5.0
3.0
~
~ 2.0
!
I6
IpLH
£.
~
Vee = sv
~ .....
05
.
........
0.3
/
0.2
o.1 1
t>
500
~ 400
IF= 16mA
;:
~
1.0
1
-t>
-- ---
600
&
6
/
300
~
/
'"
........
j200
r- t-
___ IPHL
10
20
I
50
100
o-50
-25
25
50
Ambient Temperature [OC]
Load Resistance [Idl]
5-34
....-
~
./
Vee
= 5V
IF= ,6mA
RL
75
= 1.9kn
I
100
NEe
NEe Electronics Inc.
PS2007B
HIGH SPEED
PHOTO COUPLER
NEPOC SERIES
Description
Features
The PS20078 is a high speed photo coupler containing a
GaAsP light emitting diode and an integrated detector
consisting of a photo diode and a high gain linear
amplifier that drives a Schottky clamped·open collector
output transistor in a plastic DIP (Dual In-line Package).
D
D
D
D
D
D
Package Dimensions
Applications
D
D
D
D
D
Ultra high speed: SOns typ
High isolation voltage: 3000VDC min
Low input current requirement: SmA
Economical, compact, plastic dual in-line package
TTL compatible: 5V supply
Equivalent to 6N137
Line receivers
Floating power supplies
Computer and peripheral memory
Replacement for mechanical and reed relays
Replacement for pulse transformers
Absolute Maximum Ratings
TA = +2S'C
·00
'Jt"
3.5 ± 0.5
4.4 Max (0.13B)
(0.173 Max)
i
2.5 Min
(0.0. Min)
*
_
-*--
05
(0.02)
1.2 (0.047) I
•
1
~I..
I
Diode
Reverse Voltage, VR
SV
Forward Current, IF
10mA
Detector
Supply Voltage, Vce
7V
Output Voltage, Vo
7V
Output Current, 10
SOmA
Enable Voltage, Ve
II.. .. ~o~
Power Dissipation, PD
Package Dimensions In MIllimeters (Inches)
Isolation Voltage, BV1
B3-00042OA
Storage Temperature, TSTG
Operating Temperature, TOPT
Pin Connection
Output
v.
Input
Input
Function
PIN
Output
1.
NC
2.
Anode
3.
Cathode
4.
NC
5.
GND
6.
Vo
7.
V.
B.
Vee
83·Q00422A
5-35
S,SV
85mW
3000VDC
-5S'C to + l2S'C
O'C to +70'C
II
NEe
PS2007B
Electrical Characteristics
TA = 0 to + 70°C
Electrical Characteristics (cont)
TA = +25°C
Limits
Umits
Parameter
Symbol
Min
Test
Conditions
Typ
Max
Unit
1.7
V
IF= 10mA,
TA = +25'C
10
pA
VR = 5V,
TA = +25°C
pF
V = 0,
1= 1.0MHz
Symbol
Parameter
Diode
Min
Typ
Max
Test
Conditions
Unit
Coupled
Forward Vollage
VF
1.42
Reverse Currenl
IR
0.01
Capacitance
CT
60
Detector
High Level
Enable Currenl
IEH
-0.8
Low Level
Enable Currenl
IEL
-1.2
-2.0
mA
Vee = 5.5V,
VEH = 2.0V
mA
Vee = 5.5V,
VEL = O.SV
pA
Vee = 5.5V
Vo = S.5V,
IF = 2S0pA
VE = 2.0V
Coupled
High Level
Oulpul Current
10H
30
2S0
Low Level
Output Voltage
VOL
0.4
0.6
V
Vee = S.SV,
VE = 2.0V
IF = SmA,
10 = 13mA
Low Level
Supply Current
ICCL
10
18
mA
Vcc = S.SV,
VE = 2V
IF = 10mA
High Level
Supply Current
ICCH
7
15
mA
Vcc = 5.5V,
VE = O.SV
IF = OmA
Current
Transler Ralio
CTR
600
%
IF = 5mA,
Vce = 5V,
RL = 1000
Isolalion
Resistance
R1-2
1012
0
VIN-OUT =
lkV
Isoiatlon
Capacitance
Cl-2
0.7
pF
V = 0,
1= lMHz
Propagation
Delay Time
10 Low
Outpul Level
IpHL2
50
Progatlon
Delay Time
10 High
Oulpul Level
IpLH2
50
Propagalion
Delay Time
01 Enable
to Low
Outpul Level
tEHL
15
ns
Propagalion
Delay Time
01 Enable
to High
Oulpul Level
tELH
30
ns
75
ns
75
IF = 7.5mA,
Vee = 5V
RL = 3500,
CL = 15pF
ns
IF = 7.SmA,
Vcc = SV
RL = 3S00,
VEH = 3V
CL = lSpF
Notes: 1. Test Conditions: DC voltage for 1 min at TA = +2SoC,
RH = 60% between input (pins 1, 2, 3, and 4 common)
and output (Pins 5, 6, 7, and B common).
2. Measuring Circuit.
Measuring circuit
Pulse Input
1-""1'""--r--....... vcc ~
PW= 1fJ.S
Duty Cycle
=
1/10
IF Monitor
_-,--1
0.01
MF
RL
~
SV
"_I
~ -- (IF :S~~~A)
In:~ ____ ---- - -1-\.._-_(_IF_27_i._~~_mA)
350n
I--+---t-~ Vo Monitor
sv
Output
I
I
I
I
I
I
I
I
I
I
I
I
-------r
I
:
I
I
I
--j
tpHL
·CL Is approximately 15pF. which Includes probe and stray wiring capacitance.
~
-1.5V
It-VOL
I
I
-I :tpLH
83-oo0411B
5-36
ftt{EC
PS2007B
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
100
Output Current vs Output Voltage
50
.'
/
10
o. 1
/
/
0.01
1.1
V
/
/
10~\
~
/
.
/
!
~,
30
"-=
%
20
.;;
"-="
%
10
1.2
1.3
1.4
J
~
o
IF - 2mA
10
Forward Voltage lV1
Output Voltage IV]
High Level Output Current vs Ambient Temperature
Output Voltage VB Forward Current
I---I--r--
0
5
.c
.2'
'"
o
20
BO
,
\
'1v;~50n
510n
~!~kll
I\~ ~
\...
"
..........
II
--
-- --- I
10
Forward Current (rnA]
Propagation Delay Time vs Load Resistance
1000
Vee
Vee = 5V
RL = 350n
\.
L
Vo
RL = loon
o
o
100
Output Voltage vs Forward Current
= SV
IF - 7.5mA
.
~
"
oS
\\
500
300
E
;: 200
i;'
~\
\\
~
c
I
1
o
50
2
~TAIO·C
~
~~
100
0
100·C
~\ 'l~~:g
o
,Fil:::
"-r\.
1
Ambient Temperature 1°C)
"
d
I\..
\\
\\
-----60
40
5V
r-.....
\. 1\\
100
0.1
~~~
o
1.6
1.5
I
--- ----- ---
-- ---
c-
1
mA
~
---
...Pc = 8SmW
...
0
\\~
10
--- --
,,
",
:~
C
~
,,
rr.,A
1000
..
BmA
1
\
40
0.
I
10
1---"'-=-+-'I-+--+--t+tt- 1PHL
30
I
20
10 ~----L-~--L-~~LLUlk~---L--~--L-L-LL~~10~k
100
Load Resistance [n)
Forward Current ImAI
5-37
tttlEC
PS2007B
~pical
Charac,eristics (cont)
TA= + 25°C
Propagation Delay Time YS Forward Current
Propagation Delay Time YS Ambient Temperature
100
Vee - 5V
500
80
300
~
j
i
~
..i
Oi
.s
200
u
E
tpLH
,.. "......
50
30
...
tpHL
..
;::
-
100
o
10
---15
60
~c
20
10
Vee = 5V
RL = 3500
IF = 7.5mA
RL - 350n
20
i...
--
40
./
N
-
0
It
I
25
Forward Current [mA1
20
o
-20
tpHL
-
-
i,..o-""'
V"
~
tpLH
./
20
40
Ambient Temperature ("C]
5-38
V
V
60
80
--
--
"";;;I
--
NEe
NEe Electronics Inc.
PS2010
PHOTO COUPLER
SINGLE TRANSISTOR
NEPOC SERIES
Description
Features
The PS2010 is an optically coupled isolator containing a
GaAs light emitting diode and an NPN silicon photo
transistor. Compatible with MCT2, H11A1-H11A5 and
4N25-4N28.
o
o
o
o
High isolation voltage: 2000VAC
High transfer ratio: 20% min
High speed switching: t r, tf = 4ILs typ
Economical, compact, dual in-line plastic package
Applications
o
Package Dimensions
1;:-
o
o
o
9.25 ± 0 . 5 A 1
4
r
(0.364)
Ii
6
o
",.1
('" 0.39)
Interface circuit for various instruments and
control equipment
Chopper circuits
Computer and peripheral manufacture
Pulse transformers
Data communication equipment
Absolute Maximum Ratings
TA = +25°C
Diode
Reverse Voltage, VR
Forward Current (DC), IF
Power Dissipation, PD
Peak Forward Current (300JLs, 2% duty cycle), IF (peak)
2.54
30V
70V
Collector Current, Ic
I
Isolation Voltage1, BV
~(0.1)+I
Isolation Voltage1, BV
Package Dimensions in Millimeters (Inches)
83-000421A
83·000385A
5-39
150mW
25DOVOC
2000VAC
-55"C to +150"C
Operating Temperature, TOPT
-55"C to + 100"C
Total Power Dissipation, PT
(Top View)
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
7V
100mA
Storage Temperature, TSTG
Lead Temperature (Soldering 105)
Pin Connection
3A
Collector to Base Voltage, VCBO
Power Dissipation, PD
I
150mW
Transistor
Collector to Emitter Voltage, VCEO
Emitter to Collector Voltage, VECO
0.5
(0.02)
5.0V
SOmA
260"C
250mW
II
t-iEC
PS2010
Electrical Characteristics
TA = +25°C
Test circuit for switching time
Limits
Parameter
Symbol
Diode
Forward Voltage
Min
Typ
Max
Unit
Test
Conditions
VF
1.1
1.4
V
IF = 10mA
Forward Vollage
VF
1.2
1.S
V
IF = SOmA
Reverse Currenl
IR
Junclion
Capacitance
Transistor
Colleclor 10
EmiHer
Dark Currenl
10
C
50
"'pF"
Pulse Input
pw:
<>-----,
1
l00~.
,.-----<> Vee: 5.0V
Duty Cycle:= 1/10
+"-----0 VOUT
IF
VR = 5V
son
V = 0,
f = 1.0MHz
RL
= 10011
B3·000399A
50
ICED
nA
VCE = 10V,
IF = 0
DC Currenl
Gain
hFE
Colleclor 10
Em iller
Breakdown
Voltage
BVeEO
30
60
V
Ie = lmA,
la = 0
Colleclor 10
Base Breakdown BVcao
Voltage
70
120
V
Ie = 100",",
IE = 0
Emiller 10
Colleclor
Breakdown
Voltage
7
BVECO
Coupled
Currenl Tra nsler CTR
Rali0 2
(leltFI
Collector
Saluration
VCE(sat)
-Voltage
Ie = 2mA,
VeE = 5.0V
700
V
20
0.3
Diode Power Dlsslpallon vs Ambient Temperature
150
IE = 100",",
la = 0
%
IF = 10mA,
VCE = 5.0V
V
IF = 10mA,
Ie = 2.0mA
n
VIN·OUT =
1.0kV
Isolation
Resistance
RH
Isolation
Capacilance
C,-2
0.8
pF
V = 0,
1= 1.0MHz
Rise Time 3
IR
4
,"5
Vec = S.OV,
Ie = 2mA,
RL = loon
Fall Time 3
IF
4
'"s
Vec = 5.0V,
Ie = 2mA,
RL = loOn
1011
Typical Characteristics
TA = +25°C
~c
i:;
I'""'
100
Q
.~
~
"
50
"" '"
1.SmW/oC
""
o
o
25
50
75
100
125
I
150
Ambient Temperature ["C]
Transistor Power Dissipation VI Ambient Temperature
150
Notes: 1. Measuring Conditions: DC or AC voltage for 1 min at
~
TA = +25°C, RH = 60% between input (pins I, 2, and 3
common) and output (pins 4, 5, and 6 common).
2. eTR rank: K: 80%-210%, L: 50%-110%, M: 20%-70%.
i
3. Test circuit for switching time.
Q
~
"'
100
:;
J
~
"
50
.~
~
o
o
25
50
"" '"
1.SmW/cC
75
100
Ambient Temperature ["C]
5-40
125
I
150
NEe
PS2010
Typical Characteristics (cont)
TA= +25°C
Colleclor Current vs Collector to Emitter Voltage
Forward Currenl vs Forward Voltage
50
50
I
V
40
V V
V
V
I¥
TA == BOoe
40
50
25
;;-
-20
c
30
~
V
S
/. V
c'l
.!!
IV
I)
10
)
0.8
0.6
1.0
20
V
10
I
L
1---"50 "-
~
Pc = 150mW
~
30
1
~t--
1---
20
I
10
5m
IF
o
o
1.6
, ....
I
....
~
1.4
1.2
-
YV
c
u
lb V V
o
--
.§.
10
Forward Voltage IV]
Collector to Emitter Voltage [V]
Collector 10 Emiller Dark Current VI Ambient Temperature
Currenl Transfer Ratio VI Forward Current
10~
160
140%
IF'=' 0
.
~
140
Is= 0
,,0
1~
~
c'l
Vee -24V~
Vee = 10V
i!
o!l
lOOn
!
/
IOn
//
u
In
t
o
25
//
50
VeE
-
~
I
100
75
40
100
V
/ . ~~
~~
o
~
0
"~
~
z
-
~~
~~~
.......
~~~
Normalized to 1
N ~
25"C
TA~
= 5.0V
V
~
c'l
;;
~
.5
~
IF = lOrnA
VeE
50
I
100
,.
Normalized Oulput Current va Base Resistance
~~~~~
~~
~
~
c'l
38%
~r-
10
1.0
;;
II
60%
forward CUrrent [rnA]
Normalized Output CUrrent vs Ambient Temperature
~~~~
"t-
I-""
0.5
Ambient Temperature [DC]
~
--
10-
::;;..
.....
/
V/ v,. ./
IY ~r-
80
60
o
9O~.
V
0
115%
/
= SV
1=
~
S
!
8
12
V
//
E
w
V
~ 120
//
----
.............
,
......-
~
--do---~-
--1
Normalized to 1.0 at RB - X
F == 20mA, VCE = 5V
IF= 10mA, VeE =' V
;,,"
0.5
!§
0.5
0
Z
-25
25
50
75
I
100
Ambient Temperature (OCl
o
100
200
300
400
Base Resistance [kO]
5-41
500
:x;
(Base open)
t-{EC
PS2010
Typical Characteristics (conti
TA= +25°C
Switching 11m. VI Load Resistance
Collector Current va Collector SaturaUa" Voltage
100
100
50
:c
.....-
10
oS
1s
/
-
~
20mA
./
~
10mA
F
5mA
l
o
0.1
I'
.ll0:
I
[J
0.3
0.2
0.4
0.5
0.6
50
100
Saturation Voltage va Forward Current
~15J..
E
atl0mA,5V
f
c
~
~
5mA
i0
0.6
l!
~
III
\
S
~
\
u 0.2
~
I\,
~
r-....
~ t-- t~
o
0.5
~~
RL
~ Ildl
.E
60
E
S
1-"50
I
100
~
0
40
Z
son
500n~ loon
20
lk
10k
!
o
100
200
300
8ase Rellstance [kO]
\.\ ~
\ IY
11
50
w
Frequency Response
80
(IE- 1.0mA)
.!!
10
100
--
~
Forward Current [mAl
.:;..,
~
I
Ie =10mA
0.4
3k
100
I I I
0.8
2mA
1k
Collector to Emitter Breakdown Voltage VB Base Resl.lance
CTR:
1mA
500
300
Load Resistance [0.]
1.0
O.SmA
I
0.5
Collector Saluratlon Voltage [V]
E
Vee =5V IF =: 20mA
"
F
,,
0.1
V
10
t
// /../ ....
!
"
IF- 40mA
100k
I
500k
Frequency [Hz)
5-42
500
I
00
(Base open)
-
-
--
-"II'
--
~;;;;;;t"''''
_
PS2021
PHOTO COUPLER
HIGH ISOLATION VOLTAGE
SINGLE TRANSISTOR
t-fEC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The PS2021 is an optically coupled isolator containing a
GaAs light emitting diode and an NPN silicon photo
transistor.
o
o
o
o
o
Package Dimensions
r;::6
Small package: 7.2 x 6.5 x 3.5mm
High isolation voltage: 4000VAC rating
High transfer ratio: 50% min
High speed switching: t r, tj = 3/Ls typ
Economical, compact, dual in-line plastic package
Applications
I
7.2 , 0.5
(0.283) - .
5
4
(/11
o
o
o
o
o
(,/, 0.039)
Interface circuit for various instruments and
control equipment
Chopper circuits
Computer and peripheral manufacture
Pulse transformers
Data communication equipment
Absolute Maximum Ratings
TA = +25°C
Diode
Reverse Voltage, VA
Forward Current (DC), IF
Power Dissipation, Po
Peak Forward Current(300"s, 2% duty cycle), IF (peak)
0.5
(0.02)
I
2.54
Package Dimensions In Millimeters (Inches)
3A
40V
Collector to Base Voltage, VCBO
70V
Collector Current, Ic
·Under application for UL
150mW
Transistor
Collector to Emitter Voltage, VCEO
Emitter to Collector Voltage, VECO
I
hO.l)..J
5.0V
BOmA
Power Dissipation, Po
7V
100mA
150mW
8a-000557A
Isotation Voltage1, BV
Pin Connection
(Top View)
1_ Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
8a-ODDa85A
5-43
4000VAC
Storage Temperature, TSTG
-55'C to +150'C
Operating Temperature, TOPT
-55'C to +100'C
Lead Temperature (Soldering 10s)
260'C
Total Power Dissipation, PT
250mW
NEe
PS2021
Electrical Characteristics
Test circuit for switching time
TA = +25°C
Umlts
Parameter
Diode
Forward Voltage
Symbol
Min
Typ
Max
Unit
Test
Conditions
VF
1.1
1.4
V
IF = 10mA
Forward Vollage
VF
1.2
1.5
V
IF = 50mA
Reverse Current
IR
10
,.,I<
VR = 5V
pF
V = O.
1= 1.0MHz
nA
VCE = 10V.
IF = 0
Junction
Capacitance
Transistor
Collector to
Emiller
Dark Current
50
C
50
ICED
DC Current
Gain
hFE
Collector to
Emiller
Breakdown
Voltage
BVCEO
0----.,
100~.=
PW =
Duty Cyct.
1
r-----<> vee = 10V
1/10
+'----~ VOUT
'F
SOH
83-000S07A
Ic = 2mA.
VCE = 5.0V
700
40
Pulse Input
V
60
Ic
la
= lmA.
=0
Typical Characteristics
TA = +25°C
Collector to
Base Breakdown BVcao
Voltage
70
Emitter to
Collector
Breakdown
Voltage
7
BVECO
120
V
9
V
Ic = 100,.,1<.
IE = 0
Diode Power Dissipation vs Ambient Temperature
ISO
IE = 100,.,1<.
la = 0
i'
.5
c
Coupled
Current Transfer CTR
Ratl0 2
(ICIlF)
i
50
%
IF = 10mA.
VCE = 5.0V
V
IF = 10mA.
Ic = 2.0mA
n
VIN-OUT
1.0kV
pF
V = O.
I = 1.0MHz
Collector
Saturation
Voltage
VCE(S.t)
Isolation
Resistance
RH
Isolation
Capacitance
~-2
0.5
Rise TIme 3
tr
3
ILS
Vcc = 10V.
Ic = 2mA.
RL = lOOn
Fall Tlme 3
tl
3
ILS
Vcc = 10V.
IC = 2mA.
RL = lOOn
0.3
1011
I;
..°
ii5
150%-300%,
L:
"'-
1.5 mW/'C
50
~
I
=
o
90%-180%,
o
25
50
100
75
125
150
Ambient Temperature [ec]
Transistor Power Dissipation VI Ambient Temperature
ISO
Notes: 1. Measuring Conditions: DC or AC voltage for 1 min at
TA = +25°C. RH = 60% between input (pins 1. 2, and 3
common) and output (pins 4, 5, and 6 common).
2. CTR rank: K:
50%-110%.
'" "
'\
100
M:
1
i
~
!I
3. Test circuit for switching time.
I'"
'\
100
"'-
"
1.5mW/"C
50
~
o
o
25
50
~
75
Ambient Temperature
5-44
100
[Gel
125
I
150
-t-iEC
PS2021
Typical Characteristics (cont)
TA= +25°C
Forward CUrrent 'IS Forward Voltage
Collector Current '18 Collector to Emitter Voltage
50
100
~\
40mA~
50
/// //
:(
A
10
/
40
//
E
I.
c
55'C
t'-25'C
a
,
0.5
/
O. 1
/
/
/
I
60°C
100°C
,
0.8
0.9
1.0
1.1
1.2
1.3
1.4
,
...
...
.. .
20mA
~
15mA
Y
10
IL
o
1.5
10
Collector to Emiller Voltage [V]
Collector to Emiller Dark CUrrent 'IS Ambient Temperature
Current Transfer Ratio
'IS
Forward CUrrent
180
10,000
Sam~
160
_
/.
1000
~
;:.
a-!!
C!
Ji
VCE 40V
VCE 24V
VeE-l0V
100
,g
&!
\\//
~
$
~
l!
I
Sample B
~
140
~
L Vv
80
tz.- ~}o-
60
~
0
~ ~~
20
~
// /
1
-25
25
50
75
100
0.5
10
'IS
Normallz~d
Ambient Temperature
160
100
II
140
80
120
3
-
~
~
JJ= Jl
V
Vee
5V
60
IF=10mA
o
1 V
0
0
V
L
~
E
~
a;;
I
I
100
Output CUrrent 'IS Base ResJstance (Typical)
J...-
IF"'" 20mA
~
50
Forward CUrrent [rnA]
Ambient Temperature COC]
Normalized Output Current
~mpi.E
~
V
~
g
-50
sampl~ 0
VII'
100
u
;a
Sample C
1/
120
E
II
10
.....
IF= SmA
Forward Voltage [V]
!
--I- ...
lOrnA
o 'r
0.05
0.7
20
·u
IJ
j
~
~
jV
a
-, ,
- -
// ...-~
30
~
VI II 'fl t'~~~C
1
/ ~...!5~
:(
!.
!.
40
~
Normalized to 1.0
at TA = 2SOC
40
IF= lOmA
VeE = S.OV
Z
OL__L-____-L____-L____
-50
-25
~~
____L__ _ _ __L_ _ _ _
25
50
75
:'J.
-<
20
1/
<
~!
100
SDk
lOOk
500k
1M
Base Resistance [0]
Ambient Temperature (OC]
5-45
x
i
tttfEC
PS2021
~plcal
Characteristics (cont)
TA': +25°C
Switching 11m. va Load Resistance
Collector Current VI Collector Saturation Voltage
100
'00
Vee= 10V
80mA
40mA
f--
1 .0
20mA
10mA
!
5mA 1
I
~~
E===
~~
1=",
oco_
iIW'/
•
O.
Ie
50
r--
ION
~
10
tD-
1=1=
..&
~
!IE
aa
i
•
0.2
0.4
'.0
200
100
50
Collector Saturallon Voltage [V]
saturation Voltage
VI
O.B
Forward Currant
Collector
i
2k
lk
en]
to Emitter Breakdown Voltage VI Bate Resistance
100
Ic=1mA
lE:
a110mA.5V
I:.
:!! BO
H...r..Jom!rl--lr.mb,...-lim='-t-/!,m.b.il+th:e"'=:-mom=A....,--.-..,-"rl
-
~
lE:
t
500
Load Resiliance
'.0 rTTT'TTI--.,--n-.-rTT'"rrnr---,r-------,
CTR: 96% Sample
I
I
0.5
il
O.B
0.6
..&
:::::::-to..
t~
D. ~/
2mA
~
O.B H-H-HI--,-+-t--H-jc--+-il-H-ttt--I--++++++t1
I
~
r.-
60
ID
0.4
H-+t+tt---HI---ft--lH-++H-t-1
-r-+---II--t-H-+t-H
.
,,~\
m
~E
..
~:::::--~t-l"""~..i~~~~ill I
O·:C"Onm--:l·
[A; ............
0.5
'0
50'00
"
1"'::--.
I\.
/3000
5.00
RL = .kfl
"\
\
,\
~.oon
\ \ I'
20
Ik
5k
10k
o
lOOk
500k
lk
Base Resistance [kCl]
Frequency Response
BO
20
50k
Forward Current [mAl
.00
40
.!!
50k
lOOk
500k
Frequency [Hz]
5-46
OC
(Base open
--
-
-
--
...
--~
fttfEC
PS2022
PHOTO COUPLER
HIGH ISOLATION VOLTAGE
DARLINGTON TRANSISTOR
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The PS2022 is an optically coupled isolator containing a
GaAs light emitting diode and an NPN silicon Darlingtonconnected photo transistor.
D
D
D
D
D
Package Dimensions
Applications
r;:- M
7.2' 0.5
(0.283)
6
5
4
ob1
(ob 0.039)
Small package: 7.2 x 6.5 x 3.Smm
High isolation voltage: 4000VAC rating
High transfer ratio: 200% min
High speed switching: t r, tf = BOILs typ
Economical, compact, dual in-line plastic package
D Interface circuit for various instruments and
control equipment
D Chopper circuits
D Computer and peripheral manufacture
D Pulse transformers
D Data communication equipment
Absolute Maximum Ratings
TA = +25°C
Diode
Reverse Voltage, VR
Forward Current (DC), IF
Power Dissipation, PD
Peak Forward Current (300ILS, 2% duty cycle), IF (peak)
40V
40V
Collector Current, Ic
*Under application for UL
Isolation Voltage1, BV
83·OQ0557A
Pin Connection
2. Cathode
Ne
Emitter
Collector
Base
83·000400A
5-47
100mA
150mW
4000VAC
-55°C to + 150°C
Operating Temperature, TOPT
-55°C to +100°C
Total Power Dissipation, PT
3.
4.
5.
6.
7V
Storage Temperature, TSTG
Lead Temperature (Soldering 10s)
1. Anode
3A
Collector to Base Voltage, VCDO
Power Dissipation, Po
Package Dimensions In Millimeters (Inches)
150mW
Transistor
Collector to EmiHer Voltage, VCEO
EmlHer to Collector Voltage, VECO
~fo~~~
5.0V
BOmA
260°C
250mW
II
NEe
PS2022
Test circuit for switching time
Electrical Characteristics
+25°C
TA =
limits
Parameter
Symbol
Min
Typ
Max
Unit
Test
Conditions
Diode
Forward Vollage
VF
1.1
1.4
V
IF
Forward Voltage
VF
1.2
1.5
V
IF
Reverse Current
IA
10
pA
VA = 5V
pF
V = 0,
1= 1.0MHz
nA
VCE = 10V,
IF = 0
Junction
Capacitance
Transistor
Collector to
Emiller
Dark Current
50
C
PW~1m.
= 10mA
= 50mA
r----OOvcc ~ 10V
1
~---,
Duty Cycle
~
1110
+"-----0 VOUT
IF
50n
83-000527A
100
ICED
DC Current
Gain
hFE
Collector to
Emitter
Breakdown
Voltage
BVCEO
40
60
V
IC = lmA,
18 = 0
Colieclor 10
Base Breakdown BVeao
Vollage
40
90
V
Ic
IE
Emillerlo
Coliector
Breakdown
Vollage
Pulse Input
Ic = 0.5mA,
VCE = 5.0V
9
BVECO
V
Typical Characteristics
TA = +25°C
= 100pA,
=0
Diode Power Dissipation va Ambient Temperature
150
IE = 100pA,
la = 0
I
c
Coupled
Currenl Transler CTR
Ratl02
(lc/lF)
Coliector
Saturalion
Vollage
VCE(sat)
Isolation
Resistance
RH
200
1.0
1011
%
IF = 10mA,
VCE = 5.0V
V
IF = 5mA,
Ic =2.0mA
n
VtN·OUT =
1.0kV
Isolation
Capacitance
CI-2
0.5
pF
V = 0,
1= 1.0MHz
Rise Time 3
IA
80
I-'s
VCC = 10V,
IC = 50mA,
RL = lOOn
Fall Tlme 3
IF
80
1-'5
VCC = 10V,
Ic = 50mA,
RL = lOOn
i
j
"""
\..
100
"'"
e
.-IIi
50
.!!
e
Q
o
25
50
1.5 mW/OC
'"
"
75
Ambient Temperature
100
125
I
150
[Gel
Transistor Power Dissipation va Ambient Temperature
150
Notes: 1. Measuring Conditions: DC or AC voltage lor 1 min at
TA = +25°C, RH = 60% between input (pins 1,2, and 3
common) and output (pins 4, 5, and 6 common).
2. CTR rank: K: - 900%, L: - 500%, M: - 200%.
3. Test circuit lor switching time.
Ig
..
le
..i
.i
!
100
50
'" "'"
"
2S
50
1.5mW/"'C
""
7S
"
100
Ambient Temperature [DC]
5-48
12S
I
150
t¥EC
PS2022
Typical Characteristics (cont)
TA= +25°C
Forward Current vs Forward Voltage
Collector Current vs Collector to Emitter Voltage
100
160
50
.
-55·C
E
10
I
;;
~
/
V
/
/
-25·C
.
//
//
25·C
"'E
60.C'(X
~
&
I
=100·C
I 0.5
0.1
0.7
0.8
Ii il
VF -
~
80
~
C
60
"I
40
,/",\5
//,\.0
_->K
IF=D.5mA
1.2
Forward Voltage -
1.3
1.4
1.5
10
V
VeE - Collector to Emitter Voltage - V
Collector Current vs Forward Current
Collector to Emitter Dark Current vs Ambient Temperature
..
-
~.O
20
1.1
1.0
0.9
100
.!!
/
/' /
~
(l
IX;Vi
.!!-
~~t
./'3.0
-
E 120
O·C
=
140
1m
I
~
(l
100~
Vce=40V
VeE = 24V
VeE lOV-""'-
-e:
il
=
10.
~E
w
II
V/./
1.
S
././
~
i
c
./ ./ ./
lOOn
"I
~
.//
10n
-25
25
Ta -
50
100
75
IF - Forward Current - rnA
Ambient Temperature _ DC
Current Transfer Ratio vs Forward Current
Normalized Output Current vs Ambient Temperature
10000
140
VCE=2V
;f.
I 120
;;
~
(l 100
=
Co
S
80
0
"1:!
~c
z
I
60
1.4 ~
~
~
P'"
"
,
V
~
i
~
~
40
I
II:
....
Normalized to 1.0 at 25°C
IF=lmA, VCE=2V
"
n=6
-1
-50
-25
25
Ta -
50
75
./
~ ~ ~~
1000
-
~---~
V
V
E
----
;;
(l
20
Sample A
5000
I
""«,:
II:
....
~
;f.
500
' /. /
V/
V
100
0.1
100
Ambient Temperature _ °C
0.5
IF -
5-49
10
Forward Current -
rnA
NEe
PS2022
Typical Characteristics (cont)
TA= +25 D C
Normalized Output Cunent vs Base Resistance (Typical)
Collector Current vs Collector Saturation Voltage
IF=1mA
VCE=2V
~
10,0
~
60
a
~
IF=5mA
n=6' ,
~ ~ f?"
i
60
40
t;
20
1
a:
.1
( 0.39)
Absolute Maximum Ratings
~
TA = +25°C
Diode
Reverse Voltage, VR
Forward Current (DC), IF
Peak Forward Currenl, IFP
Power Dlssipallon, Po
I
2.54
PS30D1200V
Peak Oil and Reverse Voltage, VORM' VRRM
PS3002400V
Peak Pulse Currentl, ITP
Peak Surge on Currenl, IrSM
I
Power Dissipalion, Po
hO.1)+i
Isolallon Vollage 2, BV
Package Dimensions In Millimeters (Inches)
83-000421A
Pin Connection
(Top View)
2. Cathode
3. NC
4. Cathode
5. Anode
6. Gate
83-o00556A
5-55
300mA
3A
3A
350mW
2500VOC
Siorage Temperalure, TSTG
-55°C 10 +125°C
Operating Temperalure, TOPT
-55°C 10 + 100°C
Lead Soldering Time (aI260°C)
1. Anode
3A
100mW
5CR
Peak Oil and Reverse Vollage, VORM, VRRM
Direct On-Site Current, IT
0.5
(0.02)
6V
SOmA
10s
II
PS3001/2
Turn-on test circuit
Electrical Characteristics
TA = +25°C
Umits
Parameter
Symbol
Min
Diode
Forward Vollage
Typ
Max
Unit
1.1
1.4
v
pw
~---,
~ 100".
Duty Cycle = 1/10
IF = 20mA
50
Cr
p'
v=
0-----0
VD = 6V
1
IF
10
Reverse Currenl
Juncllan
Capacilance
Pulse Input
Test
Conditions
UVIl\o1I-----o
,= 1.0MHz
YOUT
27kn
son
0,
RL = 100n
PhotoSeR
Peak Oft-State
VORM = Rated.
Current
IORM
10
pA RGK = 27Kn
- - - - - - - - - - - - - - - - - TA = +100°C
10
Reverse Current IRRM
pA
On State
Vollage
Holding
Current
Rate 0' Rise
0'Blocking
Forward
v
IT = 300mA
0.2
mA
RGK = 27kn,
Va = 24V
1.0
VII'f'
VORM = Rated
RGK = 27kn,
TA = +100°C
1.3
dVidt
0.5
Voltage
83·QOO55BA
Typical Characteristics
TA= +25°C
Forward Current VI Ambient Temperature
Coupled
Turn on
Current
5
1FT
mA
Voe
DC/1 min
C-
VIN-OUT =
~
100
Isolation
Breakdown
Vollage
2500
Isolation
Resistance
1011
Isolation
Capacitance
Turn-on
Tlme 3
12
120
Va = 6V,
RGK = 27kn
n
0.8
10
tON
Notes: 1. Pulse width
pF
1.0kV
oS
80
~
u
l!
!
.e
V = 0,
, = 1.0MHz
1FT = 50mA,
Va = 6V
RGK = 27kn,
RL = lOon
60
~
~
40
20
50
25
= 100,.,s, repetition frequency = 100Hz.
~
100
75
125
I
150
Ambient Temperature ICC]
2. Measuring Conditions: DC voltage for 1 minute at
TA = +25°C; RH = 60% between input (pins 1, 2, and 3
common) and output (pins 4, 5, and 6 common).
3. Turn-on time test circuit.
Direct On-State Current VI Ambient Temperature
300
a~
i'"
'\
C-
oS
200
'"
.!!
l!I
"I
d
~
100
25
50
"75
'"
100
Ambient Temperature [DC]
5-56
125
I
150
NEe
PS3001/2
Typical Characteristics (cont)
TA= + 25°C
Peak Olf-Slate Current
vs Ambient Temperature
100~
Tum-On Current vs Ambient Temperature
50
IF = a
RGK"" 27kO
VORY= 6V
VORM= Rated
10~
:5:
c
§
.!!
J!
..i
.§.
C
~
u
~
C
/
1~
100n
/
IOn
c
0
E
~
/
In
o
0.5
40
20
80
60
100
----
§
u
V
0
10
-50
..........,
r---
-25
-
RGK - 10kH
-f-.
27k!l
100kn
25
50
75
100
Ambient Temperature rOC]
Ambient Temperature rOC]
Turn-On Current vs Gate-Cathode Resistance
100
VDRM
T.
50
C
S
"'
10
6V
25 c C
"-
II
C
~
u
I'
c
9
E
~
0.5
~
~
0.1
0.1
:;;
10
100
1000
Gate-Cathode Resistance [kO]
5-57
tt.'EC
PS3001/2
5-58
NEe
NEe Electronics Inc.
PS3001(1)/2(1)
seR PHOTO COUPLERS
NEPOC SERIES
Description
Features
The PS3001(1) and PS3002(1) are optically coupled
isolators containing a GaAs infrared emitting diode and a
PNPN silicon photo SCA.
o
o
o
o
o
Package Dimensions
r;:-
Applications
o
9.25
± 0.5A1
(0.384)
6
5
4
o
4>.1
r
High voltage isolation: 2500VAC min
Low turn-on current: 12mA max
Plastic dual in-line package
High-speed switching
Economical, compact
Interface circuits for various instruments and
control equipment
Replacement for reed relays
Absolute Maximum Ratings
(4) 0.39)
TA = +25°C
Diode
Reverse Voltage, VR
Forward Current (DC), IF
Peak Forward Current, IFP
Power Dlsslpallon, Po
SCR
Peak Off and Reverse Voltage, VORM' VRRM
Peak Off and Reverse Voltage, VDRM, VRRM
Direct On-Slale Current, II
Peak Pulse Current1, lIP
0.5
~"'r--(0.02)
Peak Surge on Current, IISM
I
2.54
Power Dlsslpallon, Po
I
1+(0.1)'"
Isolallon Voltage2, BV
Package Dimensions In Millimeters (Inches)
83-000421A
(TopYlew)
1.
2.
3.
4.
5.
Anode
Cathode
NC
Cathode
Anode
6. Gate
83.()OO556A
5-59
3A
100mW
PS3001(1) 200V
PS3002(1) 400V
300mA
3A
3A
350mW
2500VAC
Storage Temperature, TSla
-55'C 10 +125'C
Operaling Temperalure, TOPT
- 55'C 10 +100'C
Lead Soldering Time (aI260'C)
Pin Connection
6V
BOmA
lOS
II
NEe
PS3001 (1 )/2(1)
Electrical Characteristics
TA = +25°C
Typical Characteristics
TA = +25°C
Umlts
Parameters
Symbol
Diode
Forward Voltage
Vp
Reverse Current
IH
Junction
Capacitance
CT
Min
Test
Conditions
Typ
Max
1.,
1.4
V
IF" 20mA
10
pA
VR = 6V
pF
V = 0,
1= 1.0MHz
50
Unit
Forward Current VI Ambient Temperature
120
100
1
80
G
60
Pboto 5CR
VORM = rated
Peak On-State
10
IOHM
pA RGK = 27kO
Current
- - - - - - - - - - - - - - - - TA = +100'C
Reverse Current IRRM
10
pA
1.3
Holding
Current
0.2
Blocking
Voltage
'I!
~
!
.2
40
~
20
On State
Voltage
Rate 01 Rise
01 Forward
~
;;
~
dVidt
0.5
1.0
V
rnA
I
IT = 300ma
RGK = 27kO,
Vo = 24V
100
75
50
25
125
150
Ambient Temperature [DC)
VI pJl
VORM = Rated
RGK = 27kO,
TA = +100'C
12
mA
Vo = 6V,
RGK = 27kO
Vue
OCI1 min
0
VIN-OUT =
tOkV
G
ss
0
Direct On-State Current va Ambient Temperalure
Coupled
Tum on
Current
5
1FT
Isolation
Breakdown
Voltage
V'_2
2500
300
.s'l!.
~
Isolation
Resistance
R,-2
Isolation
Capacitance
C,-2
0.8
pF
V = 0,
1= tOMHz
Turn On
Tlme3
tON
10
p,s
1FT = 50mA,
Vo = 6V
ROK = 27kO,
RL = 1000
10"
I'"
:c
"~
200
"Ic
~
f'...
100
"\
25
50
Notes: 1. Pulse width = 100p,s, repetition Irequency = 100Hz.
100
75
I
150
125
Ambient Temperature [DC]
2. Measuring Conditions: DC voltage for 1 min at
TA = +25'C; RH = 60% between input (pins 1, 2, and 3
common) and output (pins 4, 5, and 6 common).
3. Turn-on time test circuit.
Peak Off~State Current vs Ambient Temperature
l00~
IF~
Turn-on test circuit
10~
~
Pulse Input 0 - -_ _- ,
PW = 100p.S
DUty Cycle ~ lNO
0
RGK= 27kO
VORM= Rated
0----0
.
~
Yo "" 6V
1
S
~
i
.....M I - - - -... VOUT
son
/
1~
U
27kll
100n
/
10n
V
/~
~
/
Rl =10on
ln
83-000558A
·5-60
o
20
40
60
Ambient Temperature ["C]
80
~
100
NEe
~pical
PS3001 (1 )/2(1)
Characteristics (cont)
TA= +25°C
Turn-On Current
YS
Tum-On Current VI Gate-Cathode Resistance
Ambient Temperature
so
100
VORM= 6Y
TA 25'C
VORM= 6V
50
'"":<
oS
..
:<
oS
10
-
~
B
c
~
,:!
0.5
--
-50
r--
-
-25
~
RGK - 10k!!
"0c
27k!!
,:!
I---
10
"
,....
E
0.5
100kll
25
50
75
0.1
0.1
100
Ambient Temperature [ec]
I
:;;
10
Gate-Cathode Resistance [kO]
5·61
100
1000
NEe
PS3002(1 )/2(1)
5-62
fttIEC
PHOTO INTERRUPTERS
6-1
II
tt.'EC
PHOTO INTERRUPTERS
Section 6 -
Photo Interrupters
PS4001, PS4003, PS4005, PS4007, PS4009, PS4010, PS4011 Photo Interrupters ......... 6-3
PS400B Photo Interrupter ............................................................ 6-9
PS4014 Photo Interrupter ........................................................... 6-11
PS6001A Photo Reflective Sensor ................................................... 6-13
Optoelectronics Applications Note Photo Interrupter .................................... 6-17
6-2
fttfEC
PS4001/3/ 5/7/9/10/11
NEe Electronics Inc.
PHOTO INTERRUPTERS
NEPOC SERIES
Electrical Characteristics
Description
TA = +25°C
The PS4001, PS4003, PS4005, PS4007, and PS4009 are
photo coupled interrupter modules containing a GaAs
light emitting diode and an NPN silicon Darlington
connected photo transistor.
Limits
Symbol
Parameter
Pin Connection
Diode
Forward Voltage
VF
Reverse Current
IR
Junction
Capacitance
C
Transistor
Collector to
Emitter
Dark Current
1. Anode
2. Cathode
3. EmiHer
Min
83-000539A
Absolute Maximum Ratings
1.1
1.4
V
20
p.A
VR ; 4.0V
pF
V; 0,
I ; 1.OMHz
nA
VeE; lOY,
IF; 0
%
IF; 10mA,
VeE; 2.0V
V
IF; 10mA,
Ie ;0.5mA
400
ICED
Coupled
Current Transler CTR
Ratio
(Ie/IF)
4. Collector
Max
100
201
Unit
Forward Current, IF
Power Dissipation, Po
Transistor
Collector to Emitter Voltage, VeEo
Collector Current, Ie
Power Dissipation, Po
5.0V
IF; 20mA
Collector
Saturation
Voltage
VeE(sat)
Rise Time
tr
200
P.s
Vee; 5.0V,
Ie; 2.0mA,
RL ; 10002
Fall Time
t,
200
p's
Vee; 5.0V,
Ie; 2.0mA,
RL; 10002
1.2
TA = +25°C
Diode
Reverse Voltage, VR
Test
Conditions
Typ
50mA
Notes: 1. PS4003: 15% min., others: 20% min.
100mW
2. Test circuit lor switching time.
30V
50mA
II
Test circuit for switching time
100mW
r---"
I
I
Storage Temperature, TSTG
Pulse Inpul
Operating Temperature, TOPT
I
~
5011
I
I
I
I
I
I
,..-------,
I
I
I
I
I
I
I
I
I-I
I-I
I
I
Vee
I
I
I
I
I
IL.. ___________ ....II
duty cycle
SV
I
L_...I
(pW~lm'
0:
)
VOUT
RL = 100Il
= 1/10
83-QOQ540A
6-3
t-{EC
PS4001/3/5/7/9/10/11
Package Dimensions
PS4003
~ 3.2
~
(~0.126)
I~
3.2
(~0.126)
-r--r-
-r--r-
f [](062~4)
lb;'l-'=L~~;JJ:~~
1::;11:::1
I
19.0 (0.748).:=J
24.5 (0.964)
.
2.6
(0.102)
83-0D0541A
PS4005
B3-00D542A
PS4007
~ 3.2
(+0.126)
-++
I:: :1 I},'ol ~ 1==r(0~:4)
E1'~Jj
4.2
(0.165)
3.5
(0.138)
12.5
(0.492)
15.7 (0.618)
.
18.5 (0.728)
2.8
(0.11)
J.
t
{
10.0
.7.2 . (0.394)
~
(0.138)
3.5
(0.136)
10.0 Min
. (0.394 Min)
~
2.6
(0.102)
2.6
(0.102)
83-000543A
6-4
83-o00544A
NEe
PS4001/3/5/7/9/10/11
Package Dimensions (cont)
PS4D09
PS4010
3.2
(0.126)
I
6.2
(0.244)
+
.. 3.5
(0.138)
Package Dimensions In Millimeters (Inches)
!
--....I(:.f~::·r (O'r
--1
8.1
10.9
7.2
00.45 100 MI
(0 0.018) (0.39 MI~)
8.9 Min
(0.350 Min)
!
00.45
(00.018)
L
2.6
(0.102)
PS4011
6.5
(0.256)
V---rf
3 (0118)-o!----lo-- C 1 (C 0.039)
.
I
(0.384)
'-rr-t--'rr-"~
L-..,.,,-.-.....
12.5
(0.492)
I
6-5
2.6
(0.102)
NEe
PS4001/3/5/7/9/10/11
Typical Characteristics
TA = +25·C
FOlWan:l Current v. Forward Voltage
Collector Current
V!I
Collector to Emmer Voltage
----
3or-------,--------r----,--y-,rT--~W_----__,
~mA
25r_------~-------r--~f-~~~--r_r_----__;
10
l,....- f-"""
IiSmA
I,....-
i
20
f-------t-------t-
! 15f-----~------_+--~~~~-+.r+_----~
...-
'I!
J10r------r----~~~~~-7~-+----~
I
I,
~L.S-------0~.9--~~~~~~~1--------L------~1.3
Collector to Emltler Voltage [V]
Collector to Emitter Dark Current VI Ambient Temperature
Collector Current VI Forward Current
.:.
c
~
il
Vce= 10V
10,000
a
1000
.Ii
100
i!
i
S
li
~
10
/
1
-20
/
V
20
V
/
/
1,= 0
C'
/
10
/
~
/
il
li
/
~
60
I
SO
/
/
VI
o
,,/
o
10
100
Nonnallzed 10 1.0
alTA 0:: 25°C
r----
IF=10mA
r----
VeE::: 2.0V
~
il
...
1.0
t.
--
z
30
Collector CUrrent VI Colleclor Saturatton Voltage
Ambient Temperature
1!
...
20
FOlWsrd Current [rnA]
2.0
&
0
I
./
Ambient Temperature rOC]
Normalized Output Current
Vee = 2.DV
/
<'
£.
40
m"
./
o
o
Forward V.llage [V]
100,000
i.-:,umA
V
......
V
-- -
V
f-'"
--
......-
3OmA-
I
20mA=
5mA=
10';'A===
/,L~
/h ~
IF= SmA
/.W /
o-20
//J '/
20
40
60
0.6
80
0.7
O.S
0.9
Collector Saturation Voltage [V]
Ambient Temperature rOC]
6-6
1.0
I
1.1
ftlEC
PS4001/3/5/7/9/10/11
Typical Characteristics (cont)
TA= +25°C
Output Characteristic
Output Voltage VI Forward Current
6.0
r------r-----r---"""T"""-~....,.~,,_-___,
5.0
i-=:"""'==i----t----j
1
S
Io
4
I'\.
\
board
\
0.5
I
\
1\
\
z
\
I\.
I:s~~~~~~~
RL 10kU
~
=
°0~---~---1~0----I~S---~20~--~25
-0.5
Forward Current [mAl
• (nm)
Typical Applications
Vee (5V -
12V)o--~--------,
i
1_= 10-20mA
r--l
r---,I 1
l l I
I
L..J
Ic=0.5-SmA
I
L________ ..J
+---_Oulpul
(2SOO)
-I1).S
(8kU)
83-00055SA
6-7
I
1tt{EC
PS4001/3/S/7/9/10/11
6-8
t-{EC
PS4008
PHOTO INTERRUPTER
NEC Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
The PS4008 is a photo coupled interrupter module containing a GaAs light emitting diode and an NPN silicon
photo transistor.
Diode
Reverse Voltage, VR
5.0V
Forward Currenl, IF
SOmA
TA = +25°C
Power Dlsslpalion, Po
100mW
Transistor
Colleclor 10 Emitter Vollage, VeEO
Package Dimensions
30V
Colleclor Currenl, Ie
40mA
100mW
Power Dlsslpalion, Po
Siorage Temperalure, TSTG
t
Dperaling Temperalure, TOPT
6.2
(0.244)
+
Electrical Characteristics
TA = +25°C
LImits
Symbol
Parameter
Diode
Forward Voltage
VF
Reverse Currenl
IR
Junction
Capacitance
C
Transistor
Colleclor 10
Emitter
Dark Currenl
t
10.0 Min
(0.394 Min)
1
I
2.6
(0.102)
Package Dimensions In Millimeters (Inches)
Ie
Max
Unit
1.1
1.4
V
IF = 20mA
20
/LA
VR = 4.0V
pF
V = 0,
f = 1.0MHz
nA
VeE = 10V,
IF = 0
J.tA
IF = 10mA,
VeE = 2.0V
V
IF = 10mA,
Ie =50J.tA
100
100
50
200
Colleclor
Saluration
Voltage
VeE(sat)
Rise Time
Ir
5
/LS
Vee = S.OV,
Ie = SOJ.tA
RL = 10001
Fall Time
It
S
/LS
Vee = 5.0V,
Ie = 50J.tA
RL = 10001
0.3
8a-000564A
Pin Connection
Test
Conditions
Trp
leEO
Coupled
Dulpul
Currenl
I
Min
Notes: 1. Test circuit for switching time.
(Top View)
1----,
r----~3
r- -,
r---,
iI
I
:~
' L ___ .J
:I
L_ .:.. _______ ...-1
Pulse Input
1
1. Anode
2. Cathode
3. Emitter
IF
r----~
0----
PW = 1ms
Duty Cycle ~ 1/10
r- -'"]
r- -
1
I
II
I/'"
I
L--..
I
L _ _ _ _ J.
Vee
~
5V
h
I
II
L ___________ ...-1
4. Collector
+----VOUT
son
2_---'
'----~4
83-000565A
83-0011BSA
6-9
-
II
NEe
PS4008
Typical Characteristics
TA = +25°C
Forward Current vs Forward Voltage
Maximum Forward Current vs Ambient Temperature
0
lO
0
25
~
1
!!
~
0
30
5
20
:&
10
C
~
~
.~
20
15
II
1!
!
10
of
'"
60
40
20
~
C
~
I
80
I
g
0
0.8
100
Collector Current VI Collector Emitter Voltage
J--
800
~
I
V
600
0
j
V
400
'0
u
200
---
Normalized Output Current VI Ambient Temperature
Nonnallzed to 1.0
at TA'=: 25D C
IF=10mA.
-
20mA
VeE = 2.0V
~
II
i
..,0
1.0
~
~
10mA
z
I
~
2mA
o
~-4---+---+--~--~--~--+---+---~-41
I
SmA
o
0
-20
20
10
40
20
VeE
~
V
\.
S
i
so
/
0
10
t!!
~
board
\
\
0.5
i
j
~
~
"
0
/
z
/
1
tf
10V
/
I~
80
Output Characteristic
Collector Dark Current VI Ambient Temperature
500
100
60
Ambient Temperature [OC]
Collector-Emilier Voltage [V]
1
1.3
2.0
~
I...-- ~ IF~ lOmA
.... ....-
1.2
Forward Voltage [V]
Ambient Temperature ["C]
1000
1.1
1.0
0.9
I\..
!
0.5
!3
20
40
60
80
-0.5
100
-HI.S
x (nm)
Ambient Temperatura [OC]
6-10
83-000554A
!\fEe
PS4014
PHOTO INTERRUPTER
NEC Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25 C
C
The PS4014 is a photo coupled interrupter module
containing a GaAs light emitting diode and an NPN silicon
photo transistor.
Diode
Reverse Voltage, VR
5.0V
Forward Currenl, IF
50mA
100mW
Power Dissipation, Po
Transistor
Collector to Emitter Voltage, VeEO
Package Dimensions
30V
40mA
Collector Current, Ie
100mW
Power Dissipation, Po
~ 3.2
(~ 0.126)
- 40'C to + 100'C
Siorage Temperalure, TSTG
t
Operaling Temperature, TOPT
6.2
(0.244)
*
-20'C 10 +80'C
Electrical Characteristics
TA = +25 C
C
limits
Parameter
Symbol
Diode
Forward Voltage
VF
Reverse Current
IR
Junction
Capacitance
C
Transistor
Colleclor 10
Emitter
Dark Current
Package Dimensions in Millimeters (Inches)
Ie
Max
Unit
1.1
1.4
V
IF
20
",A
VR
pF
V ~ 0,
f ~ 1.0MHz
nA
VeE ~ 10V,
IF ~ 0
J.tA
IF ~ 20mA,
VeE ~ 5.0V
V
IF ~ 10mA,
Ie ~50J.tA
100
100
200
Test
Conditions
Typ
ICED
Coupled
Output
Current
2.6
(0.102)
Min
500
~
~
20mA
4.0V
Collector
Saluratlon
Voltage
VeE(sat)
Rise Time
Ir
5
"'s
Vee ~ 5.0V,
Ie ~ 50J.tA
RL ~ lOOn
Fall Time
I,
5
"'s
Vee ~ 5.0V,
Ie ~ 50J.tA
RL ~ lOOn
0.3
8S-000564A
Pin Connection
Note: 1. Test circuit for switching time
(Top View)
10---..,
r---~3
r----,
I
I
I
Pulse Input
PW
r--,
I~
I
I~I
L ___ --1
I
I
I
L _________ ....J
r---~
0---
= 1ms
Duty Cycle ~ 1/16
r- --,
r- _
vee ~
5V
-,
1L___l~-~~ ___ J
1. Anode
2. Cathode
3. Emitter
4. Collector
+-----VOUT
son
2o-_ _...J
RL
~
loon
'----~4
83·000565A
83"()00566A
6-11
II
ttt{EC
PS4014
Typical Characteristics
TA = +25°C
FOlWBrd Current VI Forward Voltage
Forward Current va Ambient Temperature
C
60
30
50
25
~
S
C 40
~
~
30
!0
.
.
E 20
E
;,
10
20
40
20
~
u 15
l!
'"""
u.
:l!
~
~
3
60
~
~ 10
~
I
60
§
0
100
l3
0.8
0
600
1c
.
600
~
u
I
~
~
,..-
J.-IF
~
30mA
--
2.0
1.1
1.3
.---r--"""T""----.--,.---r--"""T""-~------~
Normalized to 1.0
atTA=25"C
IF=10mA,
VCE=2.DY
-
~
20mA
400
1.0
Normalized Output Current VI Ambient Temperature
Collector Current va Collector Emitter Vollage
1000
0.9
FOlWarei Voltage [V]
Ambient Temperalure [OC]
i.-- ~
'0
1OmA~ ~
u
200
~
2mA
o
1)
0~~~~~~~~~~1
I
SmA
10
-20
20
40
20
60
60
Ambient Temperature [DC]
CoUecloraEmltier Voltage [V]
Output Characteristic
Collector Dark Current VI Ambient Temperature
500
VCE-10V
1
./
1
!~
5
1
50
./
0
10
i
8
/'
/
1
board
\
0.5
\
I\.
I
.!!
d"
t'\.
\
V
100
\
\
I'\:
0
0.5
20
40
60
60
-0.5
100
+11.5
x (nm)
Ambient Temperalure rOC]
6-12
83·000SS4A
t\'EC
PS6001A
PHOTO REFLECTIVE
SENSOR
NEe Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
. TA= +25°C
The PS6001A is a photo reflective sensor containing a
GaAs light emitting diode and an NPN silicon photo
transistor.
Diode
Reverse Voltage, Vn
Package Dimensions
3V
Forward CUrrent, IF
50mA
Power Dissipation, Po
75mW
Transistor
Collector to Emitter Voltage, VeEO
BAS
(0.333)
30V
40mA
Collector Current, Ie
Power Dissipation, Po
100mW
Junction Temperature, TJ
T
80·C
-30·C to +80·C
Storage Temperature, TSTG
6
(0.236)
1,----'1-++-----'
::!L
Electrical Characteristics
3.55
TA
(0.140)
10 ± 0.2
(o.394)
+n' ...
)
....
= +25°C
Umlts
I
12.5
(0.098)
.
Parameters
f
Anode
\
Peak EmiSSion
Wavelength
C81hode fLED
EmItter
Photo Tr
83·000571A
Pin Connection
Max
1.2
1.4
V
IF
50
pA
Vn
= 30mA
= 3V
nm
IF
= 30mA
= 20pA
940
APEAK
Collector
Saturation
Voltage
0.3
V
Ie
Output Leak
CUrrent
1.0
pA
IF = 30mA,
VeE = 5V,
L = OIx
pA
Note 1
Output Current
CD
Unit
100
Ie
200
Note 1: Test circuit for switching time.
®
}l
"
5V
" ----- -,PS6001A
"
I
\
\
I
l~O: -
,
®
- -
/I'A Meter
0
~J ~
83·000572A
Speculum
77//
6-13
Test
Conditions
l'yp
Reverse Current
® cOllectorl
@
Min
Forward Voltage
6 ± 0.2
(0.23 6)
.s,.
d12
::>
~
S
~
0
-T
------
30mA
500
.,-
. / "./
200
~ '/
100
2~mf
.,-r.rl~m.
IF
50
l' "r-~
1
I
I
L
.,100
200
500
lk
RL
83·Q00577A
Figure 3. Masking (Shade) Effect
I
I
I
4008
20
10
I
L.J
PS----~T
RL
2k
5k
en)
"
10k
I
Figure 5. PS400B Switching Characteristics
3. Using the PS400a as a
High·Speed Interrupter
taken with the emitter loaded. Loading the collector
would give similar results.
This application deals with interrupters using a rotating
disk as the interrupting element. Using a Darlington
photo transistor (PH103 type) as the detector device,
the frequency range of the transistor is generally the
limiting factor. In this example the limit is about 1kHz.
Since most of the applications for this type of interrupter involve frequencies below 1kHz, speed is not a
problem. In applications requiring speeds greater than
1kHz, a single photo transistor (PH104) is recommended.
Figure 6 shows the output voltage to LED forward
current (IF) at 7kHz and a fixed load of 1.1KO.
f
= 7kHz
1000
/'
c.
0.
.s>,.
The PS4008 photo interrupter is used to illustrate the
following application and its characteristics are shown
in Figure 5.
L/
./
::>
~
500
i
,/'
0
The slotted disc shown in Figure 4 was rotated at 10,000
to 30,000RPM, and the output of the PS4008 was monitored onan oscilloscope. The output frequency ranged
from 7kHz to 20kHz. At 7kHz and IF = 10mA, the photo
transistor load RL could go as high as 10KO, and an
output voltage of 900mV peak to peak could still be
obtained. The data in Figure 5 shows the resulting data
/'
o
o
L
p"
f~·5V
r--" r----,
I
.jLf-
./
I
I
I
LJ -
1.1kH
~
10
15
20
Forward Current IF (rnA)
Figure 6. IF - '~)uT Characteristic
6-18
/'"
V
25
30
OPTOELECTRONICS
APPLICATIONS NOTE
t\'EC
PHOTO INTERRUPTER
Figure 7 illustrates the output voltage versus frequency
characteristics when the output frequency range is
from 7kHz to 20kHz and the load resistance is 1.1 Kn.
The implementation of a mechanical interrupter at
20kHz generally is difficult, but most of the problems
can be overcome by using the application circuit
in Figure 8 and reshaping the output waveform with a
precision comparator.
5V~4r----~------~~--------~
10kn
r- - ,
I
I
10kn
S.1kn
IlPC277C
I
>--t--<>OutpUI
200U
1000
RL
~
~
0
83·Q00583A
-- --
-
0.
~
oS
= 1.1kH
Figure 8. PS4008 Application Circuit
IF = 20mA
.......
500
>
~
0
10mA
o
o
10
15
20
Interrupter Revolving Frequency f (kHz)
Figure 7. PS4008 Frequency Characteristics
6-19
OPTOELECTRONICS
APPLICATIONS NOTE
NEe
PHOTO INTERRUPTER
6-20
ttiEC
PHOTO TRANSISTORS AND PHOTO DIODES
7-1
II
PHOTO TRANSISTORS AND PHOTO DIODES
NEe
Section 7 - Photo Transistors and Photo Diodes
PH101 NPN Epitaxial Darling~on Photo Transistor Photo Detector ......................... 7-3
PH102 NPN Epitaxial Photo Transistor Photo Detector .................................. 7-5
PH103 Darlington Photo Transistor ................................................... 7-7
PH104 Photo Transistor ............................................................ 7-11
PH106 Photo Transistor ............................................................ 7-15
PH10B NPN Silicon Epitaxial Transistor ............................................... 7-17
PH201A Photo Detector GaAsP Photo Diode .......................................... 7-19
PH302 Plastic Molded Pin Photo Diode .............................................. 7-21
PH302B Pin Photo Diode ........................................................... 7-25
PH305 Plastic Molded Pin Photo Diode .............................................. 7-29
PH309 Plastic Molded Pin Photo Diode .............................................. 7-31
Optoelectronics Using Photo Interrupters ............................................. 7-35
Optoelectronics Applications Note Infrared Remote Control ............................. 7-41
Application of SE303A to Remote Control ............................................ 7-47
7-2
ttlEC
PH101
NPN EPITAXIAL
DARLINGTON PHOTO TRANSISTOR
PHOTO DETECTOR
NEe Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25°C
The PH101 is a miniature NPN silicon photo transistor
having exceptionally stable characteristics and high illuminance sensitivity mounted in a two-terminal MICRODISK package. The spectral response, extending from
4000 to 10,OOOA, is compatible with daylight, tungsten
and gallium arsenide sources. The packaging of this unit
permits close spacing in linear arrays. Its low cost and
volume producibility open new areas of use anywhere a
photo detector is desirable.
Collector to Emitter Voltage, VCED
o
o
Power Dissipation, Po
o
o
o
100mW
SO°C
Storage Temperature, TSTG
-30°C to +SO°C
Electro·Optical Characteristics
TA = +25°C
Umits
Lowcost
Low leakage current
Wide spectral response
Convenient MICRODISK package
Wide temperature range
Compact, rugged, light-weight
High sensitivity
Applications
o
o
SOmA
Junction Temperature, TJ
Features
o
o
o
o
o
20V
Collector Current, Ic
Parameters
Symbol
Collector to
Emitter
Dark Current
Collector to
Emitter
Dark Current
Collector
Saturation
Voltage
Optical switching and encoding
Intrusion alarms
Tape and card reader sensors
Level controls
Motor governors
Photo Current
Min
Test
Conditions
Max
Unit
ICE01
0.5
~
VCE = 15V,
L=0
ICE02
500
~
VCE = 15V,
L = 0,
TA = +80°C
1.5
V
Ic = 10mA,
L1 = 1000lx
rnA
VfE = 2.0V,
L = 100lx
0.7
VCE(sat,
IL
Typ
4
12
Note: 1. Measured with a tungsten filament lamp operated at a color
temperature of 2B54K.
Package Dimensions
2~Lead
Mlcrodlsk
Plastic
~±~
(0.024)
~
IJ
~±~
.
(0.024)
~
0'
~r ~t-'+3'8
(0.236 Min)
E
M.-'
(q, 0.15 Ma.)
·Solderlng conditions Bfe at 260"C or less within
5 see. at 3mm or farther from the case.
0'8j~T
. 1E:±
45
(0.177)
CD Collector
®Emltter
83-000431A
7-3
t-IEC
PH101
Typical Characteristics
TA = +25°C
Photo Current vs Colleclor to Em'"er Voltage
50
7
\
\
[
c-
30
~
II
•
i
Color Temperature 2854°K
V
\
250
C-
\
/~oo
o
C
~
.
II
........ i"~o
~ ...... ......
V
10
k-'"
"0
f.
100
~50
---
~
l
---
= 2Dlx
0.5
/
0.1
10
Power Dissipation vs Ambient Temperature
120
~
15V
100
/
.
/
Il
80
I
60
I
40
i5
j
"
oS
c
"l!
a
""",,-
~
""C~
~
/
0.1
1/
o
20
40
60
o
o
80
20
40
100
/'
50
l:
~
20
/
c
&
~
10
100
Angular Response
Spectral Response
100
/
I
80
60
Ambient Temperature rC1
Ambient Temperature [ec]
30
"" ""
~
0.
20
0.01
1000
illuminance [Ix]
VeE
10
100
10
Collector Dark Current vs Ambient Temperature
100
I
""
1
14
12
Collector to Emiller Voltage [V]
;;
2V
'"
10
oS
--- --
20
o
VeE
50
.1300
40
oS
Photo Current YS Illuminance
100
"\.
'-
/
V
~
/
/
""" ,
i'\..
.;-/
"'
.............
~
".!!rl.
/
1
400
soo
600
700
800
900
1000
1100
o
-30
1200
VeE = 2V
L = 100lx
Color Temperature 2854 oK
-20
-10
10
Angle [degree]
Wavelength [nm]
7-4
20
I
30
fttIEC
PH102
NPN EPITAXIAL
PHOTO TRANSISTOR
PHOTO DETECTOR
NEe Electronics Inc.
NEPOC SERIES
Description
Absolute Maximum Ratings
TA = +25°C
The PH102 is a miniature NPN silicon photo transistor
having exceptionally stable characteristics and is
mounted in a two-terminal MICRODISK package. The
spectral response, extending from 400 to 1000nm, is
compatible with daylight, tungsten and gallium arsenide
sources. The packaging of this unit permits close spacing
in linear arrays. Its low cost and volume producibility open
new areas of use anywhere a photo detector is desirable.
Collector to Emitter Voltage, VCEo
o
o
o
o
o
o
o
o
o
o
Electro·Optical Characteristics
High speed
Low cost
Low leakage current
Wide spectral response
Wide temperature range
Compact, rugged, light-weight
High sensitivity
TA = +25°C
Limits
Package Dimensions
Microdisk
Plastic
M.~
M.~
(0.024)
~
Parameters
Symbol
Collector to
EmlHer
Dark Current
Collector
Saturation
Voltage
Optical switching and encoding
Intrusion alarms
Tape and card reader sensors
Level controls
Motor governors
2~Lead
BO'C
-30'C to +BO'C
Storage Temperature, TSTG
Applications
o
100mW
Power Dissipation, Po
Junction Temperature, TJ
Features
o
30V
40mA
Collector Current, Ic
Typ
Test
Conditions
Max
Unit
ICED
200
nA
VCE = 10V,
L = OIx
VCE(sat)
0.3
V
Ic = O.SmA,
Ll = 1000lx
pi.
VCE = 2.0V,
Ll = 100lx
p's
VeE = 10V,
IL = 2mA,
RL = lOOn
p's
VCE = 10V,
IL = 2mA,
RL = lOOn
Photo Current
IL
Fall Time
tf
Rise Time
tr
Min
50
lBO
5
Note: 1. Measured with a tungsten filament lamp operated at a color
temperature of 2854K.
(0.024)
0'
~~. ,.~, 1<'-+3.8 ~43E.5'
-Max
(0.236 Mln)+(q, 0.15 Max)
·Soldering conditions are at 260"C or less within
5 sec. at 3mm or farther from the case.
~
II
:::;:o.aJEt
(0.177)
CD Collector
® Emitter
63·00D431A
7-5
ttiEC
PH102
Typical Characteristics
TA
= +25°C
Power Dissipation VI Ambient TamperatL',e
Photo Currenl vs Collector to Emllter Vollage
3.0
120
Tungsten Source at 2854K
100
Ii'
g
'"
80
c
i
!
I
60
:c'
20
60
40
r
I
'""'"
20
o
o
oS
i'..
40
2.0
V--
u
£
f.
1.0
Y
-------
80
10
Collector Dark Current
~
Ambient Temperature
VeE
V
100
--
50
oS
r---~
1
./
0.2
u
~
0.1
/
10
i
'ii
0.05
I
./
0.02
5
10
50
20
100
200
500
1000
2000
/
/
U
0.5
20
40
1'\
/
80
/
100
L
\.
\
~
8~
/
~11
\
100
-..... t-.....
"-
r\.
/
80
40
--
/
~
\
V
V
80
r\
/
20
80
Angula, Response
Spectral Response
/
60
Ambient Temperature rOC]
illuminance [Ix]
100
10V
/
:(
0.5
0.01
V8
./
u
f-
I
200
100 I
Collector to Emitter Voltage [V]
1.0
..§
400
500
2.0
oS
600
o
o
100
Photo Current vs illuminance
:(
800
L
2V
VeE
~
'''-
Ambient Temperature rC]
5.0
1000
/
\
J
r\
\
a:
'\
/
0
10
I'
I
11
Wavelength [X 1(Pnm]
7-6
20
VeE ~ 2V
L = 100lx
Tungsten Source at 2854K
-60
-40
-20
+20
+40
+60
NEe
NEe Electronics Inc.
PH103
DARLINGTON
PHOTO TRANSISTOR
NEPOC SERIES
Description
Absolute Maximum Ratings
TA
The PH103 is a Darlington photo transistor in a plastic
molded package, and is very suitable for a detector of a
photo interrupter.
= +25°C
Collector to Emitter Voltage, VCEO
30V
Collector Current, tc
50mA
Power Dissipation, PD
Package Dimensions
r---
100mW
Junction Temperature, TJ
100·C
-40·C to + 100·C
Storage Temperature, TSTG
5.0
-----j
1_(0.197)_1
Electrical Characteristics
TA = +25°C
Umlts
I
II--
4-R 0.5
(R 0.019)
3.25
(0.128)-
1.8
(0.071)
02
(00.079)
,----1-1
(0.018)
Test
Conditions
Typ
Max
Unit
ICED
10
400
nA
VCE = 10V,
L = OIx
VCE(sal)
0.7
1.5
V
Ic = 10mA,
L = 1000lx1
mA
VCE = 2V,
L = 100lx1
'L
Min
2.0
Note: 1. Measured with a tungsten filament lamp operated at a color
temperature of 2854K.
15
lL1'
CD Emitter
®
Collector to
Emitter
Dark Current
Photo Current
0.41....-.r
5
0.45_~
Symbol
Collector
Saturation
Voltage
5.0
(0.018)
Parameters
Collector
Package Dimensions in MIllimeters (Inches)
83-0004438
7-7
NEe
PH103
Typical Characteristics
TA = +25°C
Photo Current VI illuminance
Photo Current VI Collector 10 Emlnar Voltage
50
7
40
30
J
Color Temperature 2854°K
VeE
13QO
1-I---
10
V'
......... i'-~50
~
f
2V
50
V~
V
J! 20
o
\
C~\50
cEo
100
o
~
~ ......... t::..~0
-
100
---
f--
---.
05
10
12
o.1
14
/
1000
100
10
Collector to Emitter Voltage [V]
illuminance [Ix]
Collector Dark CURBnt VI Ambient .Tem~ ... ture
'QO
I
./
L = 20lx
Power Dissipation
VB
Ambient Temperature
120
VCE-.10Y
100
C
.~
10
§
C
80
. . 1"-
c
§
0
"
I
/
i
I
'"
i
I
V
0.1
60
40
20
0.01
/'
o
20
40
o
o
80
60
20
40
Spatial DIstribution
i
~
d!
.!!
10
"'\.
/
~
500
"600
700
800
900
1000
1100
v
~
~
100
:~
L
~
I
d! '"
........
0.5
i
"
1
4QO
./
lL
'"
80
Spectral Response
30
/
60
Ambient Temperature rC]
50
20
~
Ambient Temperature [DC]
100
~
~
~
I
1200
o
-40
-20
20
Anglen
Wavelength [nm)
7-8
40
I
ttlEC
PH103
Typical Characteristics (cont)
TA= +25°C
Frequency Response
Frequency Response Telt Circuit
.........
,....
-2
5VDC
200n
iii'
:!!.
S
1\
§
"
~
-4
~
\
-6
\
\
-8
-10
100
SE304
83·000447A
500
1k
5k
10k
Frequency [Hz]
IJ
7-9
t\'EC
PH103
7-10
t-{EC
PH104
PHOTO TRANSISTOR
NEPOC SERIES
NEe Electronics Inc.
Description
Absolute Maximum Ratings
TA = +25°C
The H104 is a photo transistor in a plastic molded package, and is very suitable for use as a detector in a
photo interrupter.
Colleclor Currenl, Ic
Package Dimensions
Junction Temperalure, TJ
30V
Colleclor 10 Emitter Voltage, VCEO
40mA
100mW
Power Dissipation, Po
100°C
-40°C 10 + 100°C
Siorage Temperalure, TSTG
r-
---1
5.0
1_(0.197)_1
Electrical Characteristics
TA=+25°C
Limits
I
II-
4·R 0.5
(R 0.019)
3.25
(0.128)-
1.8
(0.071)
4>2
0.45_++14(0.018)
@U
0.45
(0.018)
~
U'
®
Emitter
Collector
Package Dimensions In Millimeters (Inches)
Colleclor 10
Emitter Dark
Currenl
Test
Conditions
Max
Unit
ICED
100
nA
VCE = 10V,
L = OIx
VCE (sal)
0.3
V
Ic = 0.5mA,
L = 1000lx1
p.A
VCE = 2.0V,
L = 100lx1
p,S
VCC = 10V,
IL = 2mA.
RL = lOOn
Pholo Currenl
'L
Fall Time
If
Min
TWp
20
5
Note: 1. Measured wilh a tungslen filament lamp operated a color
temperature of 2854K.
2.6
(0.102)
CD
®
Symbol
Colleclor
Saluratlon
Voltage
5.0
(4)0.079)
Parameters
J
1
CD
83-0004438
7-11
t\'EC
PH104
Typical Characteristics
TA = +25°C
Photo Current VI Collector to Emitter VOltage·
Power Dissipation va Ambient Temperature
3.0
120
Tungsten Source at 2B54K
100
~c
"
80
'\~
0
I
60
!
1000
C
.!§.
..i-
~
20
o
o
20
1.0
~~
"..... ~
600
~
400
o
o
100
10
Collector to Emitter Voltage [V]
Collector Dark Current
Photo Current V8 illuminance
VeE
/
100
C
0.5
;;
§
0.2
.!§. 50
./
§
./
0
i!
0
10
S
S
0.1
~
0.05
5
10
20
50
100
200
500
1000
~
2000
./
/
0
::;
./
0.02
0.01
VeE'" 10V
./
C
~
it
20
40
/
80
V
.:.
60
~
40
J
~
20
/
r'\
/
V
/
:/
60
80
100
Ambient Temperature rOC]
Spatial Distribution
Spectral Response
100
I
0.5
illuminance [Ix]
~
Ambient Temperature
./
1.0
.!§.
;;
'IS
500
2V
2.0
I
200
- 100 I
Ambient Temperature rC]
5.0
800
1....-
80
60
40
r
J
""
40
2.0
1
1\
./
\
i
~
\
V
..........
""'"
./
'"
a:: 0.5
'\
I'
"
I
0
10
i'...
i
1\
V
V
1/
0
-40
11
+20
-20
Angleel
Wavelength [X 1Q2nm]
7-12
+40
t\'EC
PH104
Typical Characteristics (cont)
TA= + 25°C
Frequency Response
--
-2
Frequency Response Test Circuit
SVoc
r-..
200U
iii'
~
\>-
-4
SE304
Jl
II
S
I.S-MAX = 940nm)
High sensitivity (50nNlx)
Wide dynamic range
Absolute Maximum Ratings
TA = +25°C
RevelSe Voltage, VR
32V
Power Dissipation, Po
150mW
Junction Temperature, TJ
80'C
Storage Temperature, TSTG
5.210.2
Electrical Characteristics
I
TA = +25°C
Limits
Parameters
Symbol
Dark Current
IR
Maximum
Sensitivity
Wavelength
AMAJ(
940
Quantum
Efficiency
TJ
0.88
, Spectral
Sensitivity
S
Spectral
Senslllvity
1
(0.039)
(0~!7)-~H+0.6
(0.024)
o
o
.1
CD Anoda
® Cathode
Min
35
Typ
Max
Unit
30
nA
Test
Conditions
VR = 10V
nm
A = 940nm
50
nA/lx VR = 5V
S
0.&
A/W
A = 940nm
Open Circuit
Voltage
VL
285
mV
Ev = 100lx
Open Circuit
Voltage
VL
365
mV
Ev = 1000lx
125
ns
RL = lkn
VR = OV,
A = 940nm
50
ns
RL = lkn,
VR = 5V,
A = 940nm
VR = 5V,
f = lMHz
Cathode
Anode
Package Dimensions In MIllimeters (Inches)
Rise and Fall
tr,t,
Time of the
Photo Current
from 10% to 90%
and 90% to .10% t"t,
of the FI nat ilatue
83-000459A
Pin Connection
0)
-40'C to +80'C
®
83-000483A
7-21
CapaCitance
CT
14
pF
Radiant
Sensitive
Area
A
9
mm2
Noise
Equlvatent
Power
NEP
4.2 x
10-14
Detection
Limit
0
&.& x
1012
W//Hz VR = 10V
cm
/Hz/W
fttfEC
PH302
Typical Characteristics
TA = +25°C
~
f
60
i
40
I
I
ill
20
o
400
600
500
700
~
800
80
\
\
\
/
900
v
100
"\
I
V
80
- -'"
'"
Directional Characterlslic
Wavelength Senslllvity
100
.:.
'"
~
~
'"
i
V
/
\
40
20
1100
1000
60
<
o
1200
-60
-20
-40
+20
Rise Time/Fail Time vs Supply Voltage
Capacitance vs Supply Voltage
60
100
--L'
"~
1'7''--
50
~
"'-
30
20
..
W';;'
40
~.s
""
~~
~~
......
10
r--. ....... 1-10
20
Rl "" 1kll
..........
50
I
+60
Angle (')
Wavelength [nm]
11
I
+40
30
20
10
I
-------r--
0
20
10
0
30
<
I
30
Supply Voltage IV]
Supply Voltage IV]
Leakage Current vs Supply Voltage
Leakage Current vs Ambient Temperature
10
VR~5V
10'
/
1
0.5
o
V
------
~
~
~
/
.:: 101
100
10
15
20
25
i
30
Supply Vollage M
10-1
-20
~
V
V
V
20
V
./
V
40
Ambient Temperature rOC]
7-22
V
V
60
I
80
t\fEC
PH302
Typical Characteristics (cont)
TA= +25°C
Photo Current YS Illuminance
Relatlve vs Ambient Temperature
30
VR= SV
VR'" 5V
1.2
U
~
~
20
c
~
---
"~
S.
10
---
~
....---
~
100
V-
1.1
~
.:
1.0
~
0.9
..
a:
~
--
k--
~
f--
f--
-
~
0.8
200
-20
300
20
40
60
80
Ambient Temperature [Oe]
illuminance [Ix]
Photo Current vs Supply Voltage
Photo Current VI Supply Voltage
10
10
100 Ix.
10Q Ix.
c
~
I
".c~
.
I
I
o
o
10
I
20
30
Power Dissipation vs Ambient Temperature
200
!i'
f'\..
c
~
[
:~
"-
100
""-
c
.~
0
o
o
20
40
"- ~
o
o
./"
I
1.5
0.5
Supply Voltage [Vl
Supply Voltage [V]
~
, ./
V
"-
60
""-
80
100
Ambient Temperature [Oe]
7-23
II
ttfEC
PH302
7-24
NEe
NEG Electronics Inc.
PH302B
PIN PHOTO DIODE
NEPOC SERIES
Description
Features
The PH3028 is a PIN photo diode similar to the PH302
but with an added filter which filters out visible light. The
narrow spectral response range beginning at 840nm
prevents any malfunction under fluorescent light. The
large sensitive area and fast response make it suitable
for various remote control applications.
o
o
o
o
o
Ultrahigh-speed response (tr, tf = 50ns)
The maximum sensitive wavelength matches that of
an infrared LED (AS-MAX = 940nm)
High sensitivity (34nNlx)
Wide dynamic range
Visible light filtration (minimum sensitive wavelength:
840nm)
Package Dimensions
Absolute Maximum Ratings
2.8 ± 0.2
TA
(0~O~2)-+I-\4(_0._11_0)~
=
+25°C
32V
Reverse Vollage, VR
Power Dlsslpallon, PD
150mW
Junction Temperalure, TJl
80'C
Slorage Temperalure, TSTGl
-40'C- +80'C
Note: 1. The maximum ratings of TJ and TSTG are those of the
PH302. Because of the adhesive between the filter and
diode, storage and operating temperature should be kepI
between -20"C and +60'C.
sensitive
Electrical Characteristics
side
TA = +25°C
1
Limits
(0.039)
(01!7)----<~H+-
Parameters
Symbol
Min
Typ
Max
Unit
30
nA
Test
Conditions
0.46
Dark Currenl
(0.018)
0.6
(0.024)
CD Anode
® Cathode
~~----~~I~----~~
Anode
Package Dimensions In Millimeters (Inches)
Maximum
Senslllvity
Wavelenglh
940
Quanlum
Elliciency
0.88
nm
A = 940nm
Speclral
Sensitivity
S
Spectral
Senslllvity
S
0.6
AIW
Ir,l,
125
ns
RL = kO
VR = 0,
A = 940nm
Ir,l,
50
ns
RL = kO,
VR = 5V,
A = 940nm
Capacitance
CT
14
pF
VR = 5V,
1= 1MHz
Radlanl
Sensilive
Area
A
9
mm 2
22
32
nAllx1 VR = 5V
A=
940nm
Cathode
83-000471A
Rise and
Fall Tlma
Pin Connection
Note: 1. Measured at a color temperature of 2854K.
CD
VR = 10V
®
83·00Q483A
7-25
t-IEC
PH302B
Typical Application
Llghl Signal
PH302B
-Out
R
1
83·0D0472A
Typical Characteristics
TA = +25°C
Spatial Distribution
Spectral Sensltfvlty
If
80
80
1\
~
f
60
1
t
40
500
600
700
800
/
I
1000
V
/
~
-....
~
~
\
40
20
~
~
ij
1100
1200
1il
900
60
~
\
I
20
400
~
~'"
\
II:
o
v
100
100
o
60
40
20
·20
I
-40
-60
Angle of Incidence I I
C
Terminal Capacitance vs Reverse Voltage
Rise Time, Fall Time va Reverse Voltage
60
100
RL
............
60
............
50
~
~
30
~
!
20
... ~
~
40
-oS
!~
~
~!:
~;f
1'1'-
~
...............
30
20
~
10
~
0
~ ~'
1'7'
c·
-------
r-r-- r---
§
10
10
20
0
30
10
20
Reverse Voltage [V]
Reverse Voltage [V]
7-26
= 1kU
I---
I
30
NEe
PH302B
Typical Characteristics (cont)
TA= + 25°C
Dark Current VB Ambient Temperature
Dark Current vs Reverse Voltage
10'
10
j!R
Vn= SV
ro
./
10'
.....
/"
/
0.5
o
---
10
15
~
~
E
~ 10'
~
./
U·
~
100
20
I
25
V
/'
/'
/'"
I
,/
10 1
-20
30
/'
/'
20
40
Reverse Voltage [VI
Ambient Temperature [OC]
Photo Current vs illumination
Photo Current va Ambient Temperature
60
80
30
VR
V. =5V
j
i
20
~
3
io.
10
o
o
= 5V
1.2
------------ I
100
200
300
"'
1.1
1.0
i
a:
0.9
,--
------
I--
~~
~~
I
0.8
-20
20
Illumination [lx1
40
60
80
Ambient Temperature lOCI
Photo Current va Reverse Voltage
Photo Current VI Reverse Voltage
10
10
100lx
100lx
VR
-~1
~rL
I
. . . .V
J
o
./
o
20
10
o
30
Reverse Voltage [V]
./"
/'
o
0.5
1.5
Reverse Voltage [V]
7-27
NEe
PH302B
~plcal
Characteristics (cont)
TA'" + 25°C
Power Dissipation 'II Ambient Temperalure
200
[
I
"-
"
100
Q
i
3.
o
o
20
40
'"
f'..
"-
"'
60
Ambient Temperature [OC]
"
80
I
100
7-28
PH305
PLASTIC MOLDED
PIN PHOTO DIODE
ttlEC
NEe Electronics Inc.
NEPOC SERIES
Description
Features
The PH30S is a photo diode with PIN structure. It is
very suitable for a light detector with a 7-10m remote
controller or a O.3-Sm opto-interrupter. The resin
material used for the package has the filter effect of
transmitting only infrared radiation.
D Ultrahigh-speed response (tr, tf = 30ns)
D The wavelength of maximum sensitivity matches that
of an infrared LED (AS-MAX = 940nm)
D High sensitivity (32nNlx)
D Wide dynamic range
Package Dimens,ions
Absolute Maximum Ratings
TA
0.2
(0.110)
2.8::!:
=
+2S0C
20V
Reverse Voltage, VR
Power Dissipation, PD
lS0mW
80°C
Junction Temperature, TJ
Storage Temperature, TSTG
-40°C to +80°C
-t
5.2 ± 0.2
Electrical Characteristics
(0,205)
~
,
0.6
(0,024)
I
Limits
Parameters
Symbol
Dark Current
IR
Wavelength of
Maximum
Sensitivity
I,
(0~!7)---O",*-
TA = +2S0C
Min
Typ
AS MAX
940
auantum
Efficiency
11
0.88
Spectral
Sensitivity
S
Spectral
Sensitivity
S
Max
Unit
30
nA
Test
Conditions
VR = 10V
nm
0.46
13.3
(0-018)
@IJ'
+--- 5.08 ----+
(0,200)
CD Anode
® Cathode
~~----.~~)----~()
Anode
Cathode
Package Dimensions in Millimeters (Inches)
Rise and Fall
tr,t,
Time 01 the
Photo Current
Irom 10% to 90%
and 90% to 10%
Ir,t,
01 the Flanl value
23
A = 940nm
32
nA/lx
VR = SV
0.6
A/W
A = 940nm
12S
ns
RL = lkO,
VR = OV
A = 940nm
SO
ns
RL = 1kO,
VR = SV,
A = 940nm
VR = SV,
1= lMHz
B3·Q00484A
Pin Connection
CD
Capacitance
CT
11
pF
Radiant
Sensitive
Area
A
S.3
mm 2
®
83-o00483A
7-29
II
t-{EC
PH305
Typical Characteristics
TA = +25°C
~
f~
60
~
.!!!
Ii!
40
I
eli
\
\
\
/
V
20
o
400
500
600
700
800
100
"\
/
/
80
900
-~
Directional Characteristic
Wavelength Sensitivity
100
1000
1100
80
/
V
i-'"""
V
I
1200
Wavelength [nm]
7-30
~\
20
o
-60
-40
-20
+20
+40
+60
NEe
NEe Electronics Inc.
PH309
PLASTIC MOLDED
PIN PHOTO DIODE
NEPOC SERIES
Absolute Maximum Ratings
Description
TA
The PH309 is a photo diode with a PIN structure. It has
a wide photo-receiving area and high-speed response
enabling applications for various types of remote control
equipment. The resin material used for the package has
the filter effect of transmitting infrared radiation.
=
+25°C
20V
Reverse Voltage, VA
Power Dissipation, Po
150mW
Junction Temperature, TJ
80'C
Storage Temperature, TSTG
-40'C to +80'C
Features
D Ultrahigh-speed response (tr, tf = 30ns)
D The wavelength of maximum sensitivity matches that
of an infrared LED (AS-MAX = 940nm)
D High sensitivity (31 nNlx)
D Wide dynamic range
Electro·Optical Characteristics
TA
Parameters
Symbol
Dark Current
IA
Wavelength 01
Maximum
Sensitivity
Min
Typ
Max
Unit
30
nA
Test
Conditions
VA = 10V
XMAX
940
nm
Quantum
Yield
1)
0.88
Spectral
Sensitivity
S
50
nAllx
Spectral
Sensitivity
SIA
4.7
!iA
VA = 5V,
H = 0.1mWI
cm2"
120
ns
RL = 1kn,
VA = OV
X = 940nm
30
ns
RL = 1kn,
VA = 5V,
X = 940nm
VA = 5V,
1= 1MHz
10'
~I
4.13 ~ 0.2
(0.183)
1-----7.2 ~ 0.2----+1
(0.283)
I
-r
+25°C
Limits
Package Dimensions
10'
=
Rise and Fall
tr,t,
Time 01 the
Pholo Currenl
Irom 10% 10 90%
and 90% to 10% t"t,
01 the Final Value
I
'
:,\~--EI1
~"-Tt-T--t---rt
+--+--H-~cb4 o~~i:
~
=L
2.3
(0.090)
0.2 Max
(0.008 Max)
'LL J®
5.08
(0.200)
Package Dimensions in Millimeters (Inches)
Capacitance
CT
11
pF
Radiant
SenSitive
A,ea
A
5.3
mm 2
"X = 940nm
0.46
(0.018)
11
CD Anode
® Cathode
83-00049SA
7-31
X = 940nm
VA = 5V
II
t\'EC
PH309
Typical Characteristics
TA = +25°C
Directional Characteristic
. Wavelength Sensitivity
100
-10G
\
::.
60
..,~
40
+10"
(
80
f
·w
0"
\
\
~
.!!
20
)
o
400
500
600
700
800
I
900
1000
-SO'
+50"
-60·
+60"
-70·
~
1100
I
-80"
+80"
_90·
+90"
1200
Wavelength)" (nrn)
Capacitance vs Supply Voltage
Rise nme and Fall nme VI Supply Voltage
100
60
50
SO
40
Ii:'
oS
~
~...
"
\
30
20
~
10
\"'-.. 1'--- ,......
r-.
10
20
I
10
'"
0
Rl = 1kO
~
I-- r--
~ r---
10
30
I
20
30
Supply Voltage [V]
Supply Voltage [V]
Leak Current VB Supply Voltage
Leak Current YS Ambient Temperature
10'
it-
0.5
C'
s..
0.3
I
0.2
_
....----f...--
0.1
0.5
VR= 5V
10'
111'
,
o
10:
10
15
20
25
-20
30
V
./
20
/"
L
40
Ambient Temperature rOC]
Supply Vollage [V]
7-32
/
'"
60
LV
80
NEe
~plcal
PH309
Characteristics (cont)
TA= + 25°C
Photo Current
VI
illuminance
Relative va Ambia"' Temperature
30
v. = 5V
V.=5V
1.2
U
r..
1.1
~
1.0
e
.:t
o
o
--- ---
----
~
0:
0.9
--
~
~ I--
~
I
0.8
200
100
i
f.---
I-~
I-- I--
-20
300
20
40
80
60
illuminance [Ix]
Ambient Temperalure TA (Oe)
Photo Current VI Supply Vollage
Photo Current VI Supply Voltage
100lx
1001.
1,..-
V
V.
L
10'
-11"
o
o
10
20
o
o
30
Supply Vollas. [V)
Power Dissipation vs Ambient Temperature
150
'"
Eo
c
t
100
c-=
..!
50
20
40
~
I~
60
1.0
Supply Vollage [V)
200
i
0.5
80
I
100
Ambient Temperature lOCI
7-33
I
1.5
NEe
PH309
7-34
OPTOELECTRONICS
USING PHOTO
INTERRUPTERS
t-fEC
NEC Electronics Inc.
The basic photo interrupter is made up of two components: the emitter, which is generally a light emitting
diode (LED) in the red or infrared light spectrum, and
the detector, which is generally a photo transistor or
photo Darlington structure.
Figure 1 illustrates the basic photo interrupter. Light in
the visible or infrared region is emitted from an LED
(01). The light beam then travels some predetermined
distance (usually less than Smm) and arrives atthe base
of the photo transistor (01). The light energy creates
a base current, which in turn forward biases the base
emitter junction and turns the transistor on. When the
light beam is broken, no base current is available and
the photo transistor (01) is turned off.
In applications where the one-piece photo interrupter
cannot be used, an equivalent circuit can be implemented by using discrete devices. Figure 3 shows the
same basic circuit that we saw in Figure 1, but in this
case the two elements are discrete devices in the form of
a photo diode and photo transistor and the distance
between units can be varied. The distance between,
and the alignment of, the emitter and detector units are
critical factors in discrete designs. If the spacing
between elements is small (less than 2mm), then a
standard photo transistor will suffice. But for long
distances (greater than 2.5mm), a Darlington photo
transistor is recommended. In either case the emitting
element should be in the infrared region to realize
maximum energy transfer between emitter and detector.
Table 1 shows the discrete devices available from
NEG which are recommended for photo interrupter
applications.
External Shape
(Light emitting diode)
(4)2 - 4>3.8)
(4)4.8)
(FS)
Visible Red Light
SR106C
SR503C
SR603C
SR110
Infrared Light
SE302A
'SE303
SE304
Single
Photo Transistor
PH102
'PH105
PH104
Darlington
Photo Transistor
PH101
(Phototranslstor)
83·QOO5B4A
A
(Light Emitting)
Figure 1. Basic Configuration of a Photo Interrupter
Prepackaged photo interrupter units have made the
job of designing interrupter-based circuits simple and
cost effective. As can be seen in Figure 2, the basic
photo interrupter deSign is implemented in a one-piece
assembly for mass production, and although the package and emitter/detector distance changes, the basic
structure and electrical characteristics are very similar.
~ers
PH103
'Under development (for detailed specifications, please refer to
catalog).
Table 1. Discrete Devices for Photo Interrupters
PS4001
PS4003
2.5
--+j'I-
-r-r--
'14.2 1,
W
1.-7.5-1
External shapes
(cross secllon)
B
(Light Receiving)
*
~7.5-l
2.5
PS4005
~ ~
83·000585A
'Each of these devices uses an infrared LED and a Darlington photo transistor.
Figure 2. One-Piece Photo Interrupters
7-35
B
OPTOELECTRONICS
USING PHOTO
INTERRUPTERS
~EC
Basic Photo Interrupter Design Hints
A critical consideration in the design of photo interrupter circuits is the current transfer ratio (CTA) of the
circuit at a predetermined emitter/detector distance.
Assuming that CTA is 7) (%), the output level of the
photo transistor in the on state is:
le= IFX 7) ... and VOUT= ALX le= ALX IFX 7)=
AL + IF X 7) =
If the current through the LED (01) is IF and the current
through the photo transistor (Q1) is Ie, then the CTA
can be calculated as shown in Figure 3.
AL
Al
v,
D
X (Vl-VF)
x 7)
I ~:o:
o---r-_--' _ -,
IF!
I
i
I
I
I
I
_1"'"_-..,--V2
I'c
I
I
I
IL _ _ _ _ _ _ _ _ _ _ _ JI
L __ J
•
(Light receiving)
(Light emitting)
+----VOUT
83-000586A
Figure 3. Current Ttansfer Ratio (CTR)
GNDo-----'
Photo emitters can be light emitting diodes (LEOs) in
either the red or infrared light spectrum. At identical
forward current (IF), the infrared (IR) emitter efficiency
is three to five times that of the red emitter. At the same
time, the spectral sensitivity of silicon photo transistors
is two to three times greater in the infrared region (800
to 960nm) than in the red region (630 to 680 nm). The
graph in Figure 4 illustrates the relative light sensitivity
of a photo transistor.
100
I
,/
/
/
A
/
/
V
SOD
800
830000589A
Figure 5. Typical Photo Inte"upter Circuit Calculating Va
If Al and RL are selected for VOUT greater than V2, the
transistor will be in saturation. But if Rl and RL are
chosen so that the output level V2 > VOUT> ground, then
the transistor will be in the unsaturated or linear mode.
Since the CTR is prone to drift in the unsaturated
linear mode, this type of operation is not recommended.
Temperature
'\
\
1\
\
\
:~vs~!~v~tnofc:~f:~:tJ:rao,:stl~:or.
The temperature dependence of CTR is shown in
Figure 6. At a constant current, the output power
of LEOs decreases as the temperature increases.
On the other hand, with a constant bias voltage
the sensitivity of the photo transistor increases as
the temperature increases. The graph in Figure 6
illustrates these characteristics using the SE304 Infrared
LED with both the PH103 Darlington transistor and the
PH104 single transistor.
Infrared
Red
o
700
800
900
SE304 + pJ03"
1000
1.5
Wavelength [nm]
Figure 4. Relative Sensitivity of Photo Transistor
1
In Figure 5, the output voltage of the photo transistor in
Figure 4 can be calculated by first finding the forward
current (IF), where:
IF
'----GND
0.5
= Vl-VF
Al
0
VF = LED forward voltage drop
- /
2
/'"
..,-
SE304 + PH104/
/
-20
./
V
IF"" 10mA
VeE"" 2V
20
40
60
80
Ambient Temperature [Ce]
Vl = LED anode voltage
Al = LED cathode (current limit) resistor
Figure 6. Temperature Characteristics of eTR
7-36
OPTOELECTRONICS
USING PHOTO
INTERRUPTERS
t-{EC
Distance
1.4..-------r------,---------,r-------,
Since the amount of light detected is inversely proportional to the distance between the light source and the
detector, the effective sensitivity of the detector will be
1/7)2 when the distance from a point light source is
increased 7)-fold. If we use an LED as the point light
source, and if the distance to the photo transistor is d,
then:
d = 7) and ... CTR -
1.2i----j-------+-----if--------1
> 1.1i----j-------+------1f--------1
TA = 75°C
IF = 30mA
1
d2
1.01------1------+----1-------j
~~--~--~I
This characteristic is shown graphically in Figure 7
using the SE304 as the emitting device and the PH103
as the detecting device.
0.9 L _ _ _-L_ _ _ _ _
o
16B
340
Figure 9. VF
eTR"
670
1000
Test Time [H]
ute Test
;h ...... (5)
·t
40,----,------.----,------,
83-000591A
Figure 7. CTR VB. Distance
50
o~
"""
200
'
"
QQ
100
-jdi-
0
0
SE304
10
5
\
o:-I
II
0
~
&l
0
168
340
670
1000
Test Time [H)
Figure 10. 'CEO Life
PH103
0.5
~
TA = 75°C
IF"" 30mA
1
yo:. Ci2
10
I
Test
B
110
20
mm
100
Figure 8. CrR vs Distance Characteristic
~
t;
a: 90
TA = 75 c
Life Test
c
IF = 30mA
Highly reliable circuits cannot be designed without
understanding the change in characteristics of the
devices as they age. As is illustrated in Figures9through
12, the aging of photo interrupter devices has only a
nominal effect on performance, with the exception of
the CTR, which can easily be compensated for during
the design cycle if necessary.
80
70
0
168
340
Test Time [H]
Figure
7-37
11. CTR Life Test
670
I
1000
OPTOELECTRONICS
USING PHOTO
INTERRUPTERS
NEe
10
0.9 r----~-------r----,---____,
108%
~
V
0.81----+-------1----+---1
94%
P
17
~
V
v
1/ l /
~
CTR 1-3"1'
~v .- ~
V
~
1!:
!
0.7
f----+-------+----+-----1
0.6
f----+-------+----+-----1
---
~
0.5
TA = 75°C
0.5
___
'o
0.3
~
0.2
...
1000
0.1
~_ _ _ _ _ _~_IF_"_30_m_A_L_ _~~
168
340
670
""
~~
J
~
100
300
1k
OUT
RI. GND
10
3k
II
Test Time [lJ
Figure 13. tR vs RL of the PS4001
Figure 12. VCE(sal} Life Test
Switching Speed
The importance of switching speed in photo interrupters depends on the application. In mechanical
interrupter systems where high-speed slotted disks
are used to count or time events, high speed may be an
important factor. The PH102 and PH104 have a rise
time (tr) and fall time (tt) of 5J.Ls with RL = 1000. The
PH101 and PH103 Darlington devices have rise and fall
times of 200 to 500J.Ls at RL = 1000. This means that
some trade-off of CTR versus speed will be necessary
r---..
-2
Figures 13, 14, and 15 show graphically the switching
and frequency characteristics of the PS4001 photo
interrupter, the PH104 single transistor, and the PH103
Darlington transistor under sinusoidal wave light.
I
I
I
......
"\
Cii'
in high-speed designs, since single-transistor devices
have a much lower CTR than the slower Darlingtons.
This problem is generally overcome by adding a highspeed comparator, as a buffer stage, to the output of
the photo transistor.
-r-.
···2
I
~
~
-4
g
1
~
"....
Cii'
~
-4
"\
~
~
-6
\
-6
\
-8
-8
1\
-10
1k
10k
5k
50k
-10
100
100k
\
\
500
1k
Sk
10k
Frequency {1Hz]
Frequency [Hz]
Test Circuit for Frequency Characteristics
Test Circuit for Frequency Characteristics
5VDC
2001}
~
SE304
20D!!
~
PH104
SE304
OUT
OUT
83-000599A
83-000598A
Figure 14. Frequency Characteristics of the PH104 Single
PH103
Rgure 15. Frequency Characteristics of the PH 103 Darlington
7-38
OPTOELECTRONICS
USING PHOTO
INTERRUPTERS
fttIEC
The relationship of the moving distance of the shielding
object to the output voltage of the photo interrupter
circuit when the interrupting device moves across the
light path is critical to the proper design of high-speed
systems. Figure 16 shows that the difference between
high and low output level takes place in 0.5 to 0.6mm
of movement.
Figure 17 shows the characteristic difference between
a flat surface photo transistor and the lens effect surface transistor. In the flat surface (plane) devices the
output level will change over the distance b to c. For
lens effect surfaces, the shielding object must move
from a to d to change the output level. This means that
although the lens devices have a larger CTR, the movement of the shielding device to interrupt the light path
becomes longer.
Ultrahigh-Speed Photo Interrupters
(Light)
•
83·QOOSB7A
The typical switching speed of a single photo transistor is
about 5J.Ls at RL = 100n. Although the high-speed
devices will suffice in the majority of applications, higher
speeds can be attained by employing PIN photo diodes
as the sensing elements. The switching speed for these
devices is less than 100ns, making the circuit extremely
fast. The drawback to using PIN photo diodes is their low
photo sensitivity, which would require high gain amplification of the very small current or voltage generated.
Figure 16. Shielding Characteristics of the PS1004
rShieldlng object
Flat surface
"'W
........
.........
- L-t--:----~---
---,----,
__ d ___
........
.....
Lens effect surface
/
.............
~---,
....
x
b
Lens effect surface
"'L"
Y
c
Moving distance of the object
I
Flat surface
........
Flat surface
83-0006018
Figure 17. Shielding Characteristics Caused by Surface Design
/ Transparent insula ling material
r----IJ'---.
LED
Pholotransistor
83-000602A
Figure 18. Application to Ultrahigh Breakdown Voltage
Photo Coupler
7-39
II
OPTOELECTRONICS
USING PHOTO
INTERRUPTERS
NEe
7-40
~EC
OPTOELECTRONICS
APPLICATIONS NOTE
INFRARED REMOTE CONTROL
NEe Electronics Inc.
Infrared transmitter/receiver circuits using a combination of LED and PIN diode devices have virtually
replaced the ultrasonic and hard-wired remote control
systems used for short-distance remote control. Some
of the major advantages of IR systems are:
o Simple miniaturization
o Elimination of physical connections
o Fast response speed
o Limited Doppler-caused errors
o Limited effect on other equipment
o No effect on animals
Absolute Maximum Ratings
TA
150mW
Forward Current, IF
100mA
Pulse Forward Current, IFP1
1.0A
Reverse Voltage, VR
5V
Junction Temperature, TJ
BO'C
Storage Temperature, TSTO
-30'C to +BO'C
Electro·Optical Characteristics
This application note is designed to aid the designer
of remote control systems using the SE303A IR LED
and the PH302 PIN photo diode manufactured by NEC
specifically for IR control systems.
TA
= +25°C
Limits
Parameters
Symbol
Max
Unit
VF
1.27
1.45
V
IF
VFp1
2.45
3.0
V
IFP
CT
40
PF
V ~ 0,
I ~ 1.0MHz
ApEAK
940
nm
IF
~
50mA
Spectral Hall
Power Value
~A
60
nm
IF
~
50mA
Light Output
Power
Po
6
mW
IF
~
40mA
Pulse Forward
Voltage
Terminal
Capacitance
Peak Emission
Wavelength
Table 1 is a listing of the absolute maximum ratings and
the electro-optical characteristics of the SE303A.
Test
Conditions
Typ
Forward Voltage
The SE303A is a light emitting diode which emits
infrared in the 940nm range. The SE303A is made by
growing a p-n junction on a gallium arcenide (GaAs)
crystal using the liquid phase epitaxial technique.
Featuring high output and wide directional angle, the
SE303A is ideal for use in consumer and industrial
applications.
The directional pattern of the SE303A is shown in
Figure 1. This pattern shows the light output power as
a function of the angle from the optical axis. Ifthe optical
axis relative power is assumed to be 1.0, then the halfpower point is the angle at which the relative light output
equals 0.5. We can see in Figure 1 that the maximum
output is reached at approximately 5° to either side of
zero and the half-power point is reached at about 28°
either side of zero.
= +25°C
Power Dissipation, Po
Min
3.0
Response Time tON,tOFF
Note: 1. f
~
~
50mA
~
1.0A
JJ.s
1kHz, duty cycle
~
1%.
Table 1.
Figure 2 shows the relationship of the forward current
(IF) to the forward voltage (VF). The majority of transmitter applications are hand-held units powered by dry
cells in the 4.5 to 9.0V range, using two or three LEDs.
1000
C
g
+50"
V
100
~
a
I
"I!
+60 0
+70
--
!
{l.
I
10
0
111
+80 0
1.0
1.5
2.0
2.5
Forward Voltage [VI
Figure 2. Forward Current vs Forward Voltage
Figure 1. Ught Output Power Distribution
7-41
I
3.0
II
OPTOELECTRONICS
APPLICATIONS NOTE
INFRARED REMOTE CONTROL
t-IEC
In this case, if VF is high, the current required exceeds
the supply capability. The SE303A was designed so that
when the pulsed forward current (lFP) equals 1.0A ata
pulse width of 350~s, VF is typically 2.45V, which is the
ideal relationship to the typical voltage source.
Absolute Maximum Ratings
TA = +25°C
Reverse Vollage, VR
32V
Power Dlsslpallon, Po
150mW
Junction Temperalure, TJ
For example, if one IR LED is used in the application,
the pulsed forward current (IFP) would be 300mA and
the forward voltage 'YF) about 1.8V. A 3V supply would
be sufficient for this ·design. On the other hand, if three
LEOs are used, then VF becomes 1.8 x 3 or 5.4V and
the required supply voltage would be 6.0 to 9.0V and
allows the designer to use either four 1.5V cells or a
single 9V battery. In any case, the extra voltage
supplied allows.for other voltage drops in the circuit.
The PH302 is a silicon PIN photo diode designed as a
light sensing device for infrared remote control systems. Designed in an all resin-molded, vertical-contour
package, the PH302 is ideal for low-cost, high-quality
applications.
Electrical Characteristics
TA = +25°C
Limits
Parameters
Symbol
Dark Currenl
IR
Maximum
Sensillvity
Wavelenglh
XMAX
940
'1
0.88
auantum
Efficiency
Sensitivity
The PIN construction allows high-speed operation and
the wide chip area allows high sensitivity. The molded
resin is chosen for its selective filtering property, which
only transmits infrared radiation above 700nm in
wavelength, with maximum efficiency at 940nm. This
cancels spurious light from fluorescent lamps, and
gives the PH302 excellent noise-free characteristics.
This feature eliminates the need for an externallR filter.
Energetic
Sensillvlty
The absolute maximum ratings of the PH302 are shown
in Table 2, and Figure 3 illustrates the light sensitivity
characteristics.
80
~
l>
~
60
~
40
/
/
i
20
o
400
500
600
700
900
1000
30
nA
Test
Conditions
VR
= 10V
nm
x
= 940nm
nAllxl VR
50
= 5V
= 940nm
VL
mV
Ey
VL
365
mV
Ey
Rise Time
1,,1,
125
ns
RL = 1kO,
VR = 0,
x = 940nm
Fall Time
1,,1,
50
ns
RL = lkO
VR = 5V,
X = 940nm
Terminal
Capacilance
Cr
14
pF
VR = 5V,
1= lMHz
Llghl Sensilive
Area
A
x
= 100lx1
= 1000lx1
mm 2
NEP
4.2 x
10-14
WI/Hz VR = 10V
0
a.6x
10-12
cm
/HzlW
Note: 1. Light source color temperature 2854'K.
Table 2.
\,
800
Unit
0.6
Detection
Llmil
\
\
I
.~
Max
285
NOise Equivalent
Power Llmll
~
35
Typ
S
Open Vollage
"\
/
V
S
Min
A/W
Open Vollage
Wavelength Sensitivity
100
80'C
-40'C 10 +80'C
Siorage Temperalure, TSTG
1100
Wavelength (omJ
Figure 3. Spectral Sensitivity Characteristic
i
1200
SE303A and PH302 Combined
Characteristics
It is difficult to design a system on the basis of individual characteristics. The following illustrates several
characteristics when two devices, the SE303A and the
PH302, are combined.
Figure 4 shows the relative light output power and
pulsed forward current of the PH303A when the pulse
width is 300ps and duty cycle is 16%. Light output
power is the relative valueof light output, 1.0, when the
forward current (IF) is 50mA.
7-42
OPTOELECTRONICS
APPLICATIONS NOTE
INFRARED REMOTE CONTROL
NEe
15
Relative value of light output Is shown when
light output power ailF == 50mA
Is laken as 1.0 (approximately 6mW).
V
o
o
V
/
~
V
--
Figure 6 illustrates the IL-y characteristic of the
SE303A and PH302 when combined, and IFP is used
as a parameter.
~
duty
=1/16
200
600
400
600
1000
co
1/16
'"
~
...j
~
,/
10
}}
[(PH302 has average
tFP .,. tL
light sensltlvltY'}::f
I
10
50
IIIIIII
100
500
1000
I
300mA
500mA
700mA
~
"' "-.... ~ ~
""
~
......
[
50
500
100
I
1000
h-
'Y Characteristic
Designing an Infrared
Remote Control System
./
~
u
SOmA
100mA
200mA
Light Receiving Element Distance [em]
50
1:
"
II
Figure 6. SE303A-PH302
PW - 300".
100
3
4
10
500
duty
1-'-1
~
SE303A Relative Value of Light Output - Pulsed
Forward Current
The dashed line Indicates I L minimum
value against SE303A minimum value
when SE303A and PH302 are combined.
10
I
1200
Figure 5 illustrates the photo current (IL) and pulsed
forward current (IFP) characteristic. The photo current
IL is generated in the PH302 when the pulsed forward
current (IFP) of the SE303A is ata maximum and pulsed
for 300}.tS pulse width at 16% duty cycle. The LED and
PIN diode are placed 30cm apart. The PH302 in this
example has a light sensitivity of 50nA/lx, which is
typical for the PH302. The dashed line in Figure5 represents the minimum light output power of the SE303A
(with Po = 3 mWand IF = 50mA), combined with the
typical light sensitivity of the PH302 results in a light
current (IL) of 6nA minimum.
.:.
" ...... "'
1:
Pulsed Forward Current [mAl
Figure 4.
""-"'"
100
S
F= .um
"'~ ~
~
PW = 300ps
I
When designing a remote control system, the first step
is to decide how much photo current (Ill can be
generated at a given distance from the emitting source.
In this case the PH302 is used as the receiver and the
SE303A is the emitting source. From the information
given in the preceding section, the drive conditions
of pulsed forward current, the receiving amplifier gain
and the photo current (Ill are determined. Note at this
point that high gain in the first stage of amplification
should be avoided, as noise and spurious light are also
amplified. Figure 7 shows a block diagram of normal
design procedures.
5000 10000
Pulsed Forward Current [mAJ
Figure 5. SE303A-PH302
h -IFP Characteristic
The radiation intensity of infrared radiation emitted
from the SE303A decreases in inverse proportion to
the square of the distance between the emitting and
receiving devices. If the photo current generated by the
PH302, combined with the SE303A, is IL, and the
distance is y, then:
Figure 7. Block Diagram
Circuit Examples
y2,
therefore
log IL
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