1986_Sprague_Transistors_and_Diodes 1986 Sprague Transistors And Diodes
User Manual: 1986_Sprague_Transistors_and_Diodes
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CN-2S0
Ifriit.. SPRnGUE
"U!'
H
THE MARK OF RELIABILITY
DISCRETE SEMICONDUCTORS
BIPOLAR TRANSISTORS
JFETS
DIODES
ZENERS
MOS CAPACITORS
Chips and Wafers
Plastic Packages
Small-Outline Packages
Transistor Arrays
Diode Arrays
SPRAGUE ELECTRIC COMPANY
A UNIT OF THE PENN CENTRAL CORPORATION
SEMICONDUCTOR DIVISION
70 Pembroke Road, Concord, N.H. 03301
603/224-1961
INTEGRATED CIRCUITS DIVISION
115 Northeast Cutoff, Worcester, Mass. 01606
617/853-5000
Copyright © 1986, Sprague Electric Company.
Contents
SECTION 1-GENERAL INFORMATION
Commitment to Excellence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Using the Data Book . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Part-Numbering System. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Chip Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
1-2
1-3
1-4
1-5
See Also:
How to Order ......................................................... Section 8
SECTION 2-ALPHANUMERIC INDEX
SECTION 3-ELECTRICAL CHARACTERISTICS
NPN Bipolar Transistor Chips . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PNP Bipolar Transistor Chips ................................................
N-Channel Junction Field-Effect Transistor Chips. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
P-Channel Junction Field-Effect Transistor Chips . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Plastic-Case NPN Bipolar Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Plastic-Case PNP Bipolar Transistors .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Plastic-Case N-Channel JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Plastic-Case P-Channel JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Small-Outline NPN Bipolar Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Small-Outline PNP Bipolar Transistors ............. . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Small-Outline N-Channel JFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Small-Outline P-Channel JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Metal-Case N-Channel JFETS ........... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Metal-Case P-Channel JFETS ................................................
Diode Chips. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Zener Diode Chips. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Small-Outline Diodes ......................................................
Small-Outline Zener Diodes.. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .
3-3
3-15
3-24
3-28
3-30
3-39
3-45
3-48
3-50
3-52
3-54
3-57
3-58
3-62
3-63
3-65
3-72
3-73
SECTION 4-PROCESS DATA
Bipolar Transistor Selection Guide ............................................. 4-2
JFET Selection Guide. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-4
Diode Selection Guide. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-5
Bipolar Transistor Processes ................................................. 4-6
Junction Field-Effect Transistor Processes ....................................... 4-120
Diode Processes ........................................................... 4-146
Zener Processes ........................................................... 4-168
SECTION 5-ARRAYS
Chips-ln-DIPs Program. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TND Diode Arrays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TPP4000 Quad Darlington Array. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TPQ Quad Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ULN-2031A, ULN-2032A, ULN-2033A Darlington Arrays ............................
ULS-2045H Hermetic NPN Transistor Array. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
ULN-2046A Monolithic NPN Transistor Array. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
ULN-2046A-1 Monolithic NPN Transistor Array ...................................
ULN-2047ATriple Differential Amplifier Array .....................................
ULN-2054A Dual Differential Amplifier Array. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
ULN-2081A Common-Emitter 7-Transistor Arrays .................................
ULN-2082A Common-Collector 7-Transistor Arrays ................................
ULN-2083A, ULS-2083H Independent 5-Transistor Arrays. . . . . . . . . . . . . . . . . . . . . . . . . ..
ULN-2083A-1 Independent 5-Transistor Arrays ...................................
ULN-2086A NPN 5-Transistor Array. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
5-2
5-3
5-4
5-5
5-10
5-12
5-12
5-14
5-15
5-16
5-19
5-19
5-20
5-22
5-23
SECTION 6-MOS CAPACITORS
Type 15K Part-Numbering System .............................................
Type 15K Single-Section MOS Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Type 16K Multi-Section MOS Capacitors. . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . .
6-2
6-3
6-5
SECTION 7-PACKAGE INFORMATION
TO-18 .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO-39 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO-52. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO-71 ...................................................................
TO~ ...................................................................
TO-78 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO-226M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO-226AB (TO-18 Lead Form) ................................................
TO-236M (Standard Profile SOT 23) ...........................................
TO-236AB (Low-Profile SOT 23) ...............................................
TO-243A (SOT 89) .........................................................
14-Pin Dual In-Line Plastic Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
16-Pin Dual In-Line Plastic Package ............................................
Semiconductor Chip Packaging ...............................................
Packaging for Small-Outline Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Tape-and-Reel Packed TO-236AA1AB ........ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Axial-Taped TO-226M. .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . ..
Radial-TapedTO-226M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . ..
7-2
7-3
7-4
7-5
~
7-7
7-8
7-14
7-15
7-16
7-23
7-24
7-25
7-26
7-27
7-28
7-29
7-30
SECTION 8-HOW TO ORDER
Sprague Facilities ............ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
How to Place an Order. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sales Locations
U.S. and Canada. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Europe and Mideast ......................................................
Asia ..................................................................
8-2
8-2
8-3
8-4
8-5
GENERAL INFORMATION
SECTION 1-GENERAL INFORMATION
Commitment to Excellence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Using the Data Book . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Part-Numbering System. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Chip Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
1-2
1-3
1-4
1-5
See Also:
How to Order ......................................................... Section 8
1-1
GENERAL INFORMATION
Our watchword is excellence. It is our standard in customer service and component quality, and we share the longterm Sprague commitment to it as The Mark of Reliability.
One of our goals is "to be our customer's most favored
supplier." Our Commitment to Excellence program is one of
the paths to that goal. It carries the message of quality and
reliability to all of our people. It's everyone's job.
The Sprague Semiconductor Division uses statistical process control. It ships to stock. It has preferred vendor relationships with several of its customers. Our promise, however, runs
deeper than top-notch tools, techniques and contracts. Commitment to Excellence delivers the backing of our entire organization in meeting your requirements.
We realize that only you, our customer, can be the judge of
our effectiveness. We look forward to an opportunity to serve
your needs.
Jli~A. ~aVAllan Kimball
General Manager
1-2
GENERAL INFORMATION
USING THE DATA BOOK
START
YES
NO
NO
CHAPTER 2
ALPHANUMERIC
INDEX
CHAPTER 6
MOS
CAPACITOR
CHIPS
NO
CHAPTER 5
TRANSISTOR
AND DIODE
ARRAYS
POINTS TO
ELECTRICAL DATA
PROCESS DATA
PACKAGE DATA
YES
YES
YES
NO
CHAPTER 3
ELECTRICAL
CHARACTERISTICS
BY DEVICE
CLASS AND TYPE
CHAPTER 4
SELECTION
GUIDE, CHIP
DIMENSIONS,
CHIP RATINGS
AND GRAPHS
CHAPTER 7
PACKAGE
DIMENSIONS,
POWER RATINGS,
TAPE AND REEL,
CHIP PACKAGING
~--------------~
END
1-3
GENERAL INFORMATION
PART NUMBERING
THC
2222A
T
-r=
DEVICE TYPE.
THREE TO SIX DIGITS ANDIOR LEITERS.
DEVICE FAMILY.
2N = JEDEC-REGISTERED TRANSISTOR TYPE.
BAR = PRO-ELECTRON DIODE.
BAS = PRO-ELECTRON DIODE.
BAV = PRO-ELECTRON DIODE.
BAW = PRO-ELECTRON DIODE.
BZX = PRO-ELECTRON ZENER DIODE.
D = INDUSTRY STANDARD TRANSISTOR TYPE.
MPS = INDUSTRY STANDARD TRANSISTOR TYPE.
THBC = PRO-ELECTRON BIPOLAR TRANSISTOR CHIP.
THC = U.S. BIPOLAR TRANSISTOR CHIP.
THD = U.S. DIODE CHIP.
THJ = U.S. JUNCTION FIELD-EFFECTTRANSISTOR CHIP.
THJBF = PRO-ELECTRON JFET CHIP.
THZ = ZENER DIODE CHIP.
TMPD = DIODE IN SOT 23.
TMPF = JUNCTION FIELD-EFFECT TRANSISTOR IN SOT 23.
TMPT = BIPOLAR TRANSISTOR IN SOT 23.
TMPZ = ZENER DIODE IN SOT 23.
TND = DIODE ARRAY IN 14- OR 16-PIN PLASTIC DIP.
TP = TRANSISTOR IN TO-226AA/AB.
TPP = QUAD DARLINGTON ARRAY IN 14-PIN DIP.
TPQ = QUAD BIPOLAR TRANSISTOR ARRAY IN 14-PIN DIP.
MPS2222A C
I
TL--------------_AS SEMICONDUCTOR CHIP.
L-.- - - - - - - - - - - - -
UL
T
T
1
N
2031
STANDARD INDUSTRY TYPE.
A
DUAL IN·LINE PLASTIC PACKAGE.
L-_ _ _ _ _ _ _ _ _ _
DEVICE TYPE. FOUR DIGITS
'--- - - - - - - - - OPERATING TEMPERATURE RANGE.
N = COMMERCIAL/INDUSTRIAL. SEE DETAIL SPECIFICATIONS.
S = FULL MILITARY ( - 55°C TO + 125°C).
' - - - - - - - - - - - - FAMILY. MONOLITHIC TRANSISTOR OR DARLINGTON ARRAY.
1-4
GENERAL INFORMATION
CHIP COMPONENTS
The chip components group, located at the
Concord, New Hampshire, headquarters of the
Sprague Semiconductor Division, is dedicated to
serving the hybrid circuit industry. We invite you
to visit our manufacturing facility.
Silver-Backed Chips
Power devices can be furnished with an optional tri-metal silver back-side that is compatible
with solder reflow bonding methods.
All semiconductors referenced in this data
book are available in die or wafer form. Transistor
and diode dice shown in Chapter 4 of this book
are prime processes. Variations, using identical
geometries, are produced by changing the epitaxial layers during wafer fabrication. The process modifications can be used to shift
breakdown voltage and current-gain ratings to
desired values. For additional information, call
us in Concord.
Semiconductor dice are packaged in three
ways:
1. As probed, unscribed wafers in separate
wafer containers.
2. As probed and sawn wafers, mounted on
PVC film in a steel frame and covered with
protective plastic.
3. As individual dice, in a waffle or tray pack,
with typically 400 devices per pack.
Visual Inspection
High-Reliability Products
All chips are visually inspected for flaws such
as metallization or oxide defects, the presence of
foreign material, and gold back-side or wafersawing defects.
We offer discrete semiconductor chips subjected to test requirements of MIL-STD-883,
Method 5008, for Class S and Class B element
evaluation, with the single exception of Group 4,
Radiation Testing. Please contact the factory
for detailed information on Sprague HVREL®
processing.
Packaging
Dice are subjected to visual inspections meeting, as a minimum, the criteria of MIL-STO-883 or
MIL-STD-750, Methods 2072 and 2073.
NOTE
Electrical Testing
Parametric degradation, especially reduced
low-current hFE performance, often results if the
base junction of a bipolar transistor is brought to
breakdown conditions.
State-of-the-art test equipment performs 100%
die probe on wafers. Individual samples from
each wafer are subjected to all ac and dc tests to
guarantee an LPTD of 10% or a customer-specified LPTD or AQL.
For this reason, Sprague Electric strongly recommends that you avoid subjecting the base
junction of a transistor to breakdown tests such
as those for V(BR)CBO or V(BR)EBO. Those tests can
be replaced by leakage tests, such as those for
lEBo and ICBo, which safely confirm that devices
are within specified limits. Tests for V(BR)CEO
and V(BR)CES can be performed as standard
procedures.
Gold-Backed Chips
Appropriately doped gold is sputtered onto a
sputter-etched surface and alloyed to form a
back-side contact that accommodates epoxy or
eutectic die-bonding methods.' N-type substrates receive sputtered arsenic-doped gold.
P-type substrates receive sputtered galliumdoped gold. The standard gold backing is 3000
A thick. Thicker gold backing can be furnished
on request.
'Eutectic die-bonding temperatures should not exceed
450°C. A nitrogen/hydrogen (85/15) forming gas is recommended.
1-5
ALPHANUMERIC INDEX
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
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I
I
ALPHANUMERIC INDEX
Device
Type
1N457
1N458A
1N459
1N459A
1N462
1N485
1N485S
1N550
1N645
1N746
1N747
1N748
1N749
1N750
1N751
1N752
1N753
1N754
1N755
1N756
1N757
1N758
1N759
1N821
1N821 A
1N823
1N823A
1N825
1N825A
1N827
1N827A
Sprague
Type
THD457
THD458A
THD459
TMPD459
THD459A
THD462
THD485
THD485S
THD550
THD645
THZ3R3A05
THZ3R3A10
THZ3R6A05
THZ3R6A10
THZ3R9A05
THZ3R9A10
THZ4R3A05
THZ4R3A10
THZ4R7A05
THZ4R7A10
THZ5R1A05
THZ5R1A10
THZ5R6A05
THZ5R6A10
THZ6R2A05
THZ6R2A10
THZ6R8A05
THZ6R8A10
THZ7R5A05
THZ7R5A10
THZ8R2A05
THZ8R2A10
THZ9R1A05
THZ9R1 A1 0
THZ010A05
THZ01 OA1 0
THZ012A05
THZ012A10
THZ821
TMPZ821
THZ821A
TMPZ821A
THZ823
TMPZ823
THZ823A
TMPZ823A
THZ825
TMPZ825
THZ825A
TMPZ825A
THZ827
TMPZ827
THZ827A
TMPZ827A
Ratings
(Page)
Sprague Package
Process (Page)
3-63
3-63
3-63
3-72
3-63
3-63
3-63
3-63
3-63
3-63
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
TRS
TRR
TRO
TRO
TRO
TRR
TRO
TRO
TRJ
TRJ
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
Device
Type
7-26
7-26
7-26
7-18
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
1N914
1N914A
1N914S
1N914NG
1N957
1N958
1N959
1N960
1N961
1N962
1N963
1N964
1N965
1N966
1N967
1N968
1N969
1N970
1N971
1N972
1N973
1N974
1N975
1N976
1N977
1N978
1N979
1N3070
1N3595
1N3600
2-1
Sprague
Type
THD914
TMPD914
THD914A
THD914S
THD914NG
THZ6R8A05
THZ6R8A10
THZlR5A05
THZlR5A10
THZ8R2A05
THZ8R2A10
THZ9R1A05
THZ9R1 A1 0
THZ010A05
THZ010A10
THZ011A05
THZ011A10
THZ012A05
THZ012A10
THZ013A05
THZ013A10
THZ015A05
THZ015A10
THZ016A05
THZ016A10
THZ018A05
THZ018A10
THZ020A05
THZ020A10
THZ022A05
THZ022A10
THZ024A05
THZ024A10
THZ027A05
THZ027A10
THZ030A05
THZ030A10
THZ033A05
THZ033A10
THZ036A05
THZ036A10
THZ039A05
THZ039A10
THZ043A05
THZ043A10
THZ047A05
THZ047A10
THZ051A05
THZ051A10
THZ056A05
THZ056A10
THD3070
THD3595
THD3600
Ratings
(Page)
Sprague Package
Process (Page)
3-63
3-72
3-63
3-63
3-63
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-63
3-63
3-63
TSS
TSS
TSS
TSS
TRS
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
zeA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
TSO
TRR
TSS
7-26
7-18
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
I
ALPHANUMERIC INDEX
Device
Type
1N3600NG
1N4001
1N4002
1N4003
1N4004
1N4099
1N4100
1N4101
1N4102
1N4103
1N4104
1N4105
1N4106
1N4107
1N4108
1N4109
1N4110
1N4111
1N4112
1N4113
1N4114
1N4115
1N4116
1N4117
1N4118
1N4119
1N4120
1N4121
1N4122
1N4123
Sprague
Type
THD3600NG
THD4001
THD4002
THD4003
THD4004
THZ6R8B05
THZ6R8B10
THZ7R5A05
THZ7R5A10
THZ8R2A05
THZ8R2A10
THZ8R7A05
THZ8R7A10
THZ9R1A05
THZ9R1A10
THZ010A05
THZ010A10
THZ011A05
THZ011A10
THZ012B05
THZ012B10
THZ013B05
THZ013B10
THZ014B05
THZ014B10
THZ015B05
THZ015B10
THZ016B05
THZ016B10
THZ017B05
THZ017B10
THZ018B05
THZ018B10
THZ019B05
THZ019B10
THZ020B05
THZ020B10
THZ022B05
THZ022B10
THZ024B05
THZ024B10
THZ025B05
THZ025B10
THZ027B05
THZ027B10
THZ028B05
THZ028B10
THZ030B05
THZ030B10
THZ033B05
THZ033B10
THZ036B05
THZ036B10
THZ039B05
Ratings
(Page)
3-63
3-63
3-63
3-63
3-63
3-67
3-67
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-67
3-67
3-67
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
Sprague Package
Process (Page)
TRS
TRJ
TRJ
TRJ
TRL
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
1N4124
1N4125
1N4126
1N4127
1N4128
1N4148
1N4149
1N4150
1N4151
1N4152
1N4153
1N4154
1N4371
1N4372
1N4447
1N4448
1N4565
1N4565A
1N4566
1N4566A
1N4567
1N4567A
1N4568
1N4568A
1N4570
1N4570A
1N4571
1N4571A
1N4572
2-2
Sprague
Type
Ratings
(Page)
THZ039B10
THZ043B05
THZ043B10
THZ047B05
THZ047B10
THZ051B05
THZ051B10
THZ056B05
THZ056B10
THZ060B05
THZ060B10
THD4148
TMPD4148
THD4149
THD4150
TMPD4150
THD4151
THD4152
THD4153
TMPD4153
THD4154
TMPD4154
THZ2R7A05
THZ2R7A10
THZ3ROA05
THZ3ROA10
THD4447
THD4448
TMPD4448
THZ4565
TMPZ4565
THZ4565A
TMPZ4565A
THZ4566
TMPZ4566
THZ4566A
TMPZ4566A
THZ4567
TMPZ4567
THZ4567A
TMPZ4567A
THZ4568
TMPZ4568
THZ4568A
TMPZ4568A
THZ4570
TMPZ4570
THZ4570A
TMPZ4570A
THZ4571
TMPZ4571
THZ4571A
TMPZ4571A
THZ4572
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-68
3-63
3-72
3-63
3-63
3-72
3-63
3-63
3-63
3-72
3-63
3-72
3-65
3-65
3-65
3-65
3-63
3-63
3-72
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
Sprague Package
Process (Page)
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
TSB
TSB
TSB
TSS
TSS
TSB
TSB
TSB
TSB
TSB
TSB
ZAA
ZAA
ZAA
ZAA
TSB
TSB
TSS
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-26
7-18
7-26
7-18
7-26
7-26
7-26
7-26
7-26
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
ALPHANUMERIC INDEX
Device
Type
1N4572A
1N4573
1N4573A
1N4575
1N4575A
1N4576
1N4576A
1N4577
1N4577A
1N4578
1N4578A
1N4610
1N4614
1N4615
1N4616
1N4617
1N4618
1N4619
1N4620
1N4621
1N4622
1N4623
1N4624
1N4625
1N4626
1N4627
1N4734
Sprague
Type
TMPZ4572
THZ4572A
TMPZ4572A
THZ4573
TMPZ4573
THZ4573A
TMPZ4573A
THZ4575
TMPZ4575
THZ4575A
TMPZ4575A
THZ4576
TMPZ4576
THZ4576A
TMPZ4576A
THZ4577
TMPZ4577
THZ4577A
TMPZ4577A
THZ4578
TMPZ4578
THZ4578A
TMPZ4578A
THD4610
THZ1R8B05
THZ1R8B10
THZ2ROB05
THZ2ROB10
THZ2R2B05
THZ2R2B10
THZ2R4B05
THZ2R4B10
THZ2R7B05
THZ2R7B10
THZ3ROB05
THZ3ROB10
THZ3R3B05
THZ3R3B10
THZ3R6B05
THZ3R6B10
THZ3R9B05
THZ3R9B10
THZ4R3B05
THZ4R3B10
THZ4R7B05
THZ4R7B10
THZ5R1i305
THZ5R1B10
THZ5R6B05
THZ5R6B10
THZ6R2B05
THZ6R2B10
THZ5R6W05
THZ5R6W10
Ratings
(Page)
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-70
3-74
3-63
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-69
3-69
Sprague Package
Process (Page)
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
ZHQ
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
TSU
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZeA
ZeA
ZeA
ZeA
zeD
zeD
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-18
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
1N4735
1N4736
1N4737
1N4738
1N4739
1N4740
1N4741
1N4742
1N4743
1N4744
1N4745
1N4746
1N4747
1N4748
1N4749
1N4750
1N4751
1N4752
1N4753
1N4754
1N4755
1N4756
1N4757
1N5223
1N5224
1N5225
1N5226
Sprague
Type
THZ6R2W05
THZ6R2W10
THZ6R8W05
THZ6R8W10
THZ7R5W05
THZ7R5W10
THZ8R2W05
THZ8R2W10
THZ9R1W05
THZ9R1W10
THZ010W05
THZ010W10
THZ011W05
THZ011W10
THZ012W05
THZ012W10
THZ013W05
THZ013W10
THZ015W05
THZ015W10
THZ016W05
THZ016W10
THZ018W05
THZ018W10
THZ020W05
THZ020W10
THZ022W05
THZ022W10
THZ024W05
THZ024W10
THZ027W05
THZ027W10
THZ030W05
THZ030W10
THZ033W05
THZ033W10
THZ036W05
THZ036W10
THZ039W05
THZ039W10
THZ043W05
THZ043W10
THZ047W05
THZ047W10
THZ051W05
THZ051W10
THZ2R7A05
THZ2R7A10
THZ2R8A05
THZ2R8A10
THZ3ROA05
THZ3ROA10
THZ3R3A05
THZ3R3A10
Ratings
(Page)
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-69
3-65
3-65
3-65
3-65
3-65
3-65
3-65
3-65
Sprague Package
Process (Page)
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
zeD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZKD
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZED
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
I
I
I;;
2-3
I:
I',!
,~
ALPHANUMERIC INDEX
Device
Type
1N5227
1N5228
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
1N5236
1N5237
1N5238
1N5239
1N5240
1N5241
1N5242
1N5243
1N5244
1N5245
Sprague
Type
THl3R6A05
THl3R6A10
THl3R9A05
THl3R9A10
THl4R3A05
THl4R3A10
TMPl5229
THl4R7A05
THl4R7A10
TMPl5230
THl5R1A05
THl5R1A10
TMPl5231
THl5R6A05
THl5R6A10
TMPl5232
THl6ROA05
THl6ROA10
TMPl5233
THl6R2A05
THl6R2A10
TMPl5234
THl6R8A05
THl6R8A10
TMPl5235
THl7R5A05
THZ7R5A10
TMPl5236
THl8R2A05
THl8R2A10
TMPl5237
THl8R7A05
THl8R7A10
TMPl5238
THl9R1A05
THl9R1A10
TMPl5239
THlO10A05
THlO10A10
TMPl5240
THlO11A05
THlO11A10
TMPl5241
THlO12A05
THlO12A10
TMPl5242
THlO13A05
THlO13A10
TMPl5243
THlO14A05
THlO14A10
TMPl5244
THlO15A05
THlO15A10
Ratings
(Page)
3-65
3-65
3-65
3-65
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-65
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-65
3-73
3-65
3-66
Sprague Package
Process (Page)
lAA
lAA
lAA
lAA
lAA
lAA
lAA
lAA
lAA
lAA
lAA
lAA
lAA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lCA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
7-26
7-26
7-26
7-26
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
Device
Type
1N5246
1N5247
1N5248
1N5249
1N5250
1N5251
1N5252
1N5253
1N5254
1N5255
1N5256
1N5257
1N5258
1N5259
1N5260
1N5261
1N5262
1N5263
1N5264
1N5711
2N697
2-4
Sprague
Type
TMPl5245
THlO16A05
THlO16A10
TMPl5246
THlO17A05
THlO17A10
TMPl5247
THlO18A05
THlO18A10
TMPl5248
THlO19A05
THlO19A10
TMPl5249
THlO20A05
THlO20A10
TMPl5250
THlO22A05
THlO22A10
TMPl5251
THlO24A05
THlO24A10
TMPl5252
THlO25A05
THlO25A10
TMPl5253
THlO27A05
THlO27A10
TMPl5254
THlO28A05
THlO28A10
TMPl5255
THlO30A05
THlO30A10
TMPl5256
THlO33A05
THlO33A10
TMPl5257
THlO36A05
THlO36A10
THlO39A05
THlO39A10
THlO43A05
THlO43A10
THlO47A05
THlO47A10
THlO51A05
THlO51A10
THlO56A05
THlO56A10
THlO60A05
THlO60A10
THD5711
TMPD5711
THC697
Ratings
(Page)
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-73
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-66
3-63
3-72
3-3
Sprague Package
Process (Page)
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lKA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
lEA
BKD
BKD
BBC
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-18
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-18
7-26
ALPHANUMERIC INDEX
Device
Type
2N699
2N718
2N760
2N760A
2N915
2N916
2N917
2N918
2N929
2N929A
2N930
2N930A
2N956
2N981
2N1420
2N1566
2N1613
2N1711
2N2017
2N2102
2N2192
2N2192A
2N2195
2N2195A
2N2218
2N2218A
2N2219
2N2219A
2N2221
2N2221A
2N2222
2N2222A
2N2243
2N2243A
2N2270
Sprague
Type
THC699
THC718
THC760
THC760A
THC915
THC916
THC917
THC918
TMPT918
TP918
THC929
THC929A
THC930
TP930
THC930A
THC956
THC981
THC1420
THC1566
THC1613
THC1711
THC2017
THC2102
THC2192
THC2192A
THC2195
THC2195A
THC2218
TP2218
THC2218A
TP2218A
THC2219
TP2219
THC2219A
TP2219A
THC2221
TMPT2221
TP2221
TPQ2221
THC2221A
TMPT2221A
TP2221A
TPQ2221A
THC2222
TMPT2222
TP2222
TPQ2222
THC2222A
TMPT2222A
TP2222A
TPQ2222A
THC2243
THC2243A
THC2270
Ratings
(Page)
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-50
3-30
3-3
3-3
3-3
3-30
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-30
3-3
3-30
3-3
3-30
3-3
3-30
3-3
3-50
3-30
5-5
3-3
3-51
3-30
5-5
3-3
3-51
3-30
5-5
3-3
3-51
3-30
5-5
3-3
3-3
3-3
Sprague Package
Process (Page)
DAC
BBC
BAA
BAA
BAA
BAA
DMA
DMA
DMA
DMA
BAA
BAA
BAA
FEE
BAA
BBC
BAA
BBC
BAA
BBC
BBC
DAC
DAC
DAC
DAC
DAC
DAC
BBC
JGA
DCA
DCA
BBC
JGA
DCA
DCA
BBC
JGA
JGA
TNl
DCA
DCA
DCA
TNl
BBC
JGA
JGA
TNl
DCA
DCA
DCA
TNl
DAC
DAC
DAC
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-16
7-8
7-26
7-26
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-26
7-26
Device
Type
2N2386
2N2483
2N2484
2N2497
2N2498
2N2499
2N2500
2N2504
2N2509
2N2510
2N2511
2N2586
2N2604
2N2605
2N2608
2N2609
2N2696
2N2712
2N2714
2N2904
2N2904A
2N2905
2N2905A
2N2906
2N2906A
2N2907
2N2907A
2-5
Sprague
Type
2N2386
TPQ2483
THC2484
TMPT2484
TP2484
TPQ2484
2N2497
2N2498
2N2499
2N2500
THC2504
THC2509
THC2510
THC2511
THC2586
THC2604
THC2605
THJ2608
TMPF2608
TP2608
2N2608
THJ2609
TMPF2609
TP2609
2N2609
THC2696
THC2712
2N2712
THC2714
2N2714
THC2904
TP2904
THC2904A
TP2904A
THC2905
TP2905
THC2905A
TP2905A
THC2906
TMPT2906
TP2906
TPQ2906
THC2906A
TMPT2906A
TP2906A
TPQ2906A
THC2907
TMPT2907
TP2907
TPQ2907
THC2907A
TMPT2907A
TP2907A
TPQ2907A
Ratings
(Page)
Sprague Package
Process (Page)
3-62
5-5
3-3
3-51
3-30
5-5
3-62
3-62
3-62
3-62
3-3
3-3
3-4
3-4
3-4
3-15
3-15
3-28
3-57
3-48
3-62
3-28
3-57
3--48
3-62
3-15
3-4
3-30
3-4
3-30
3-15
3-39
3-15
3-39
3-15
3-39
3-15
3-39
3-15
3-52
3-39
5-5
3-15
3-52
3-39
5-5
3-15
3-52
3-39
5-5
3-15
3-52
3-39
5-5
PJ32
FEE
BAA
FEE
FEE
FEE
PJ32
PJ32
PJ32
PJ32
BAA
BAA
BAA
BAA
BAA
BXE
BCA
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
BDA
BBC
JGA
BBC
JGA
BDA
DDA
BDA
DDA
BDA
DDA
BDA
DDA
BDA
DDA
DDA
TQl
BDA
DDA
DDA
TQl
BDA
DDA
DDA
TQl
BDA
DDA
DDA
TQl
7-3
7-24
7-26
7-16
7-8
7-24
7-3
7-3
7-3
7-3
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-17
7-11
7-2
7-26
71 i
7-11
7-2
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-24
I
ALPHANUMERIC INDEX
Device
Type
2N2908
2N2923
2N2924
2N2925
2N2926
2N2944
2N2945
2N2946
2N3009
2N3013
2N3019
2N3020
2N3053
2N3072
2N3073
2N3107
2N3108
2N3109
2N3110
2N3114
2N3115
2N3116
2N3117
2N3120
2N3121
2N3133
2N3134
2N3135
2N3136
2N3250
2N3251
2N3252
2N3253
2N3299
2N3300
2N3301
2N3302
2N3329
Sprague
Type
THC2908
THC2923
2N2923
THC2924
2N2924
THC2925
2N2925
THC2926
2N2926
THC2944
TP2944
THC2945
TP2945
THC2946
TP2946
THC3009
THC3013
THC3019 .
THC3020
THC3053
THC3072
THC3073
THC3107
THC3108
THC3109
THC3110
THC3114
THC3115
THC3116
THC3117
THC3120
THC3121
THC3133
THC3134
THC3135
THC3136
THC3250
TP3250
THC3251
TP3251
THC3252
TP3252
THC3253
TP3253
THC3299
TP3299
THC3300
TP3300
THC3301
TP3301
THC3302
TP3302
THJ3329
TMPF3329
Ratings
(Page)
3-15
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-15
3-39
3-15
3-39
3-16
3-39
3-4
3-4
3-4
3-4
3-4
3-16
3-16
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-16
3-16
3-16
3-16
3-16
3-16
3-16
3-39
3-16
3-39
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-28
3-57
Sprague Package
Process (Page)
FBB
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
SHF
SHF
SHF
SHF
SHF
SHF
BJB
BJB
DSA
DSA
DAC
BDA
BDA
DAC
DAC
DAC
DAC
AJA
BBC
BBC
BAA
BDA
BDA
BDA
BDA
BDA
BOA
BTB
BTB
BTB
BTB
BHB
BHB
BHB
BHB
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
PJ32
PJ32
7-26
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-17
Device
Type
2N3330
2N3331
2N3332
2N3369
2N3370
2N3390
2N3391
2N3391A
2N3392
2N3393
2N3394
2N3395
2N3396
2N3397
2N3398
2N3402
2N3403
2N3404
2N3405
2N3414
2N3415
2-6
Sprague
Type
Ratings
(Page)
TP3329
2N3329
THJ3330
TMPF3330
TP3330
2N3330
THJ3331
TMPF3331
TP3331
2N3331
THJ3332
TMPF3332
TP3332
2N3332
THJ3369
TMPF3369
TP3369
2N3369
THJ3370
TMPF3370
TP3370
2N3370
THC3390
2N3390
THC3391
2N3391
THC3391A
2N3391A
THC3392
2N3392
THC3393
2N3393
THC3394
2N3394
THC3395
2N3395
THC3396
2N3396
THC3397
2N3397
THC3398
2N3398
THC3402
2N3402
THC3403
2N3403
THC3404
2N3404
THC3405
2N3405
THC3414
2N3414
THC3415
2N3415
3-48
3-62
3-28
3-57
3-48
3-62
3-28
3-57
3-48
3-62
3-28
3-57
3-48
3-62
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-4
3-30
3-5
3-30
3-5
3-30
Sprague Package
Process (Page)
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
ALPHANUMERIC INDEX
Device
Type
2N3416
2N3417
2N3444
2N3458
2N3459
2N3460
2N3498
2N3499
2N3500
2N3501
2N3502
2N3503
2N3504
2N3505
2N3547
2N3548
2N3549
2N3550
2N3563
2N3564
2N3565
2N3566
2N3567
2N3568
2N3569
2N3634
2N3635
2N3638
2N3638A
2N3641
2N3642
Sprague
Type
THC3416
2N3416
THC3417
2N3417
THC3444
TP3444
THJ3458
TMPF3458
TP3458
2N3458
THJ3459
TMPF3459
TP3459
2N3459
THJ3460
TMPF3460
TP3460
2N3460
THC3498
THC3499
THC3500
THC3501
THC3502
THC3503
THC3504
THC3505
THC3547
THC3548
THC3549
THC3550
THC3563
THC3564
TP3564
THC3565
TP3565
THC3566
TP3566
THC3567
TP3567
THC3568
TP3568
THC3569
TP3569
THC3634
THC3635
THC3638
TMPT3638
TP3638
THC3638A
TMPT3638A
TP3638A
THC3641
TP3641
THC3642
Ratings
(Page)
3-5
3-31
3-5
3-31
3-5
3-31
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-5
3-5
3-5
3-5
3-16
3-16
3-16
3-16
3-16
3-16
3-16
3-16
3-5
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-16
3-16
3-16
3-53
3-39
3-16
3-53
3-39
3-5
3-31
3-5
Sprague Package
Process (Page)
BBC
JFA
BBC
JGA
BHB
BHB
NJ32
NJ32
NJ32
NJ32
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
AJA
AJA
AJA
AJA
BOA
BOA
BOA
BOA
BXE
BXE
BXE
BXE
OMA
OMA
OMA
BAA
FEE
BBC
JGA
OAC
JLA
OAC
JLA
OAC
JLA
AKA
AKA
BOA
OOA
OOA
BOA
OOA
OOA
BBC
JGA
BBC
7-26
7-9
7-26
7-9
7-26
7-8
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-8
7-26
Device
Type
2N3643
2N3644
2N3646
2N3691
2N3692
2N3693
2N3694
2N3700
2N3701
2N3702
2N3703
2N3704
2N3705
2N3706
2N3707
2N3708
2N3709
2N371O
2N3711
2N3719
2N3720
2N3721
2N3724
2N3724A
2N3725
2N3725A
2N3742
2N3743
2N3793
2N3794
2-7
Sprague
Type
TP3642
THC3643
TP3643
THC3644
TP3644
THC3646
THC3691
TP3691
THC3692
TP3692
THC3693
TP3693
THC3694
TP3694
THC3700
TP3700
THC3701
TP3701
THC3702
2N3702
THC3703
2N3703
THC3704
2N3704
THC3705
2N3705
THC3706
2N3706
THC3707
2N3707
THC3708
2N3708
THC3709
2N3709
THC3710
2N3710
THC3711
2N3711
THC3719
THC3720
THC3721
2N3721
THC3724
TP3724
TPQ3724
THC3724A
TP3724A
THC3725
TPQ3725
THC3725A
THC3742
THC3743
THC3793
THC3794
Ratings
(Page)
3-31
3-5
3-31
3-16
3-40
3-5
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-16
3-40
3-16
3-40
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-5
3-31
3-23
3-19
3-5
3-31
3-5
3-31
5-5
3-5
3-31
3-5
5-5
3-5
3-5
3-16
3-5
3-5
Sprague Package
Process (Page)
JGA
BBC
JGA
BOA
JFA
BJB
BAA
FEE
BAA
FEE
FFB
FFB
FFB
FFB
OAC
JLA
OSA
DID
BOA
JFA
BOA
JFA
BBC
JGA
BBC
JGA
BBC
JGA
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
FAA
FAA
BBC
JGA
BHB
BHB
BHB
BHB
BHB
BHB
BHB
BHB
BLA
BMA
OAC
OAC
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-26
7-26
7-8
7-26
7-8
7-24
7-26
7-8
7-26
7-24
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
Device
Type
2N3798
2N3798A
2N3799
2N3799A
2N3819
2N3820
2N3821
2N3822
2N3823
2N3824
2N3825
2N3827
2N3858
2N3858A
2N3859
2N3859A
2N3860
2N3867
2N3868
2N3877
2N3877A
Sprague
Type
THC3798
TMPT3798
TP3798
TPQ3798
THC3798A
TMPT3798A
TP3798A
THC3799
TP3799
TPQ3799
THC3799A
TP3799A
THJ3819
TMPF3819
2N3819
THJ3820
TMPF3820
TP3820
THJ3821
TMPF3821
TP3821
2N3821
THJ3822
TMPF3822
TP3822
2N3822
THJ3823
TMPF3823
TP3823
2N3823
THJ3824
TMPF3824
TP3824
2N3824
THC3825
2N3825
THC3827
2N3827
THC3858
2N3858
THC3858A
2N3858A
THC3859
2N3859
THC3859A
2N3859A
THC3860
2N3860
THC3867
THC3868
THC3877
2N3877
THC3877A
2N3877A
Ratings
(Page)
3-16
3-53
3-40
5-5
3-16
3-53
3-40
3-16
3-40
5-5
3-16
3-40
3-24
3-54
3-45
3-28
3-57
3-48
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-6
3-31
3-6
3-31
3-6
3-31
3-6
3-31
3-6
3-31
3-6
3-31
3-6
3-31
3-23
3-23
3-6
3-31
3-6
3-31
Sprague Package
Process (Page)
STL
BXE
BXE
STL
STL
BXE
BXE
STL
BXE
STL
STL
BXE
NJ32
NJ32
NJ32
PJ32
PJ32
PJ32
NJ16
NJ16
NJ16
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
DMA
DMA
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
FAA
FAA
BAA
FEE
BAA
FEE
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-26
7-8
7-24
7-26
7-8
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-26
7-26
7-9
7-26
7-9
Device
Type
2N3900
2N3901
2N3903
2N3904
2N3905
2N3906
2N3923
2N3945
2N3946
2N3947
2N3954
2N3955
2N3956
2N3957
2N3962
2N3963
2N3964
2N3965
2N3966
2N3967
2N3967A
2N3968
2N3968A
2-8
Sprague
Type
Ratings
(Page)
THC3900
2N3900
THC3901
2N3901
THC3903
TMPT3903
2N3903
THC3904
TMPT3904
2N3904
TPQ3904
THC3905
TMPT3905
2N3905
THC3906
TMPT3906
2N3906
TPQ3906
THC3923
THC3945
THC3946
THC3947
THJ3954
2N3954
THJ3955
2N3955
THJ3956
2N3956
THJ3957
2N3957
THC3962
THC3963
THC3964
THC3965
THJ3966
TMPF3966
TP3966
2N3966
THJ3967
TMPF3967
TP3967
2N3967
THJ3967A
TMPF3967A
TP3967A
2N3967A
THJ3968
TMPF3968
TP3968
2N3968
THJ3968A
TMPF3968A
TP3968A
2N3968A
3-6
3-31
3-6
3-31
3-6
3-51
3-31
3-6
3-51
3-32
5-5
3-16
3-53
3-40
3-16
3-53
3-40
5-5
3-6
3-6
3-6
3-6
3-24
3-61
3-24
3-61
3-24
3-61
3-24
3-61
3-16
3-16
3-16
3-16
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
Sprague Package
Process (Page)
8AA
FEE
BAA
FEE
FFB
FFB
FFB
FFB
FFB
FFB
TVa
BTB
BTB
BTB
BTB
BTB
BTB
BTB
VXA
DAC
FFB
FFB
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
BXB
BXB
BXB
BXB
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
7-26
7-9
7-26
7-9
7-26
7-16
7-8
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-26
7-16
7-8
7-24
7-26
7-24
7-24
7-24
7-24
7-5
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-26
7-26
7-26
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
ALPHANUMERIC INDEX
Device
Type
2N3969
2N3969A
2N3970
2N3971
2N3972
2N3974
2N3976
2N3993
2N3994
2N4013
2N4014
2N4030
2N4031
2N4032
2N4033
2N4036
2N4037
2N4047
2N4058
2N4059
2N4060
2N4061
2N4062
2N4091
Sprague
Type
THJ3969
TMPF3969
TP3969
2N3969
THJ3969A
TMPF3969A
TP3969A
2N3969A
THJ3970
TMPF3970
TP3970
2N3970
THJ3971
TMPFS971
TP3971
2N3971
THJ3972
TMPF3972
TP3972
2N3972
THC3974
2N3974
THC3976
2N3976
THJ3993
TMPF3993
TP3993
2N3993
THJ3994
TMPF3994
TP3994
2N3994
THC4013
TP4013
THC4014
TP4014
THC4030
THC4031
THC4032
THC4033
THC4036
THC4037
THC4047
THC4058
2N4058
THC4059
2N4059
THC4060
2N4060
THC4061
2N4061
THC4062
2N4062
THJ4091
Ratings
(Page)
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-6
3-32
3-6
3-32
3-28
3-57
3-48
3-62
3-28
3-57
3-49
3-62
3-6
3-32
3-6
3-32
3-16
3-16
3-16
3-16
3-16
3-17
3-6
3-17
3-40
3-17
3-40
3-17
3-40
3-17
3-40
3-17
3-40
3-24
Sprague Package
Process (Page)
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
BBC
JGA
BBC
JGA
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
BHB
BHB
BHB
BHB
DJC
DJC
DJC
DJC
DJC
DJC
BHB
BXE
BXE
BXE
BXE
BDA
JFA
BXE
BXE
BXE
BXE
NJ132
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-9
7-26
7-9
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
Device
Type
2N4092
2N4093
2N4117
2N4117A
2N4118
2N4118A
2N4119
2N4119A
2N4121
2N4122
2N4123
2N4124
2N4125
2N4126
2N4140
2N4141
2N4142
2N4143
2N4220
2N4220A
2-9
Sprague
Type
TMPF4091
TP4091
2N4091
THJ4092
TMPF4092
TP4092
2N4092
THJ4093
TMPF4093
TP4093
2N4093
THJ4117
TMPF4117
TP4117
2N4117
2N4117A
THJ4118
TMPF4118
TP4118
2N4118
2N4118A
THJ4119
TMPF4119
TP4119
2N4119
2N4119A
THC4121
2N4121
THC4122
2N4122
THC4123
2N4123
THC4124
TMPT4124
2N4124
THC4125
TMPT4125
2N4125
THC4126
TMPT4126
2N4126
THC4140
2N4140
THC4141
2N4141
THC4142
2N4142
THC4143
2N4143
THJ4220
TMPF4220
TP4220
2N4220
2N4220A
Ratings
(Page)
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-59
3-59
3-24
3-54
3-45
3-59
3-59
3-24
3-54
3-45
3-59
3-59
3-17
3-40
3-17
3-40
3-6
3-32
3-6
3-51
3-32
3-17
3-53
3-40
3-17
3-53
3-40
3-6
3-32
3-6
3-32
3-17
3-40
3-17
3-40
3-24
3-54
3-45
3-58
3-58
Sprague Package
Process (Page)
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
NJ01
BTB
BTB
BTB
BTB
BAA
FEE
BAA
FEE
FEE
BXE
BXE
BXE
BXE
BXE
BXE
DCA
DCA
DCA
DCA
BJB
BJB
BJB
BJB
NJ16
NJ16
NJ16
NJ32
NJ32
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-6
7-6
7-26
7-17
7-11
7-6
7-6
7-26
7-17
7-11
7-6
7-6
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-6
7-6
I
ALPHANUMERIC INDEX
Device
Type
2N4221
2N4221A
2N4222
2N4222A
2N4223
2N4224
2N4248
2N4249
2N4250
2N4250A
2N4252
2N4286
2N4287
2N4288
2N4289
2N4290
2N4291
2N4292
2N4293
2N4302
2N4303
2N4304
2N4314
2N4338
Sprague
Type
Ratings
(Page)
THJ4221
TMPF4221
TP4221
2N4221
2N4221A
THJ4222
TMPF4222
TP4222
2N4222
2N4222A
THJ4223
TMPF4223
TP4223
2N4223
THJ4224
TMPF4224
TP4224
2N4224
THC4248
THC4249
2N4249
THC4250
2N4250
THC4250A
2N4250A
THC4252
THC4286
2N4286
THC4287
2N4287
THC4288
2N4288
THC4289
2N4289
THC4290
2N4290
THC4291
2N4291
THC4292
2N4292
THC4293
2N4293
THJ4302
TMPF4302
TP4302
THJ4303
TMPF4303
TP4303
THJ4304
TMPF4304
TP4304
THC4314
TP4314
THJ4338
3-24
3-54
3-45
3-58
3-58
3-24
3-54
3-45
3-58
3-58
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-17
3-17
3-40
3-17
3-40
3-17
3-40
3-6
3-6
3-32
3-6
3-32
3-17
3-40
3-17
3-40
3-17
3-40
3-17
3-40
3-6
3-32
3-6
3-32
3-24
3-54
3-45
3-24
3-54
3-45
3-24
3-54
3-45
3-17
3-40
3-24
Sprague Package
Process (Page)
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
BXE
BXE
BXE
BXE
BXE
BXE
BXE
DLA
BAA
FEE
BAA
FEE
BXE
BXE
BXE
BXE
BOA
JFA
BDA
JFA
DMA
DMA
DMA
OMA
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
DJC
DJC
NJ16
7-26
7-17
7-11
7-6
7-6
7-26
7-17
7-11
7-6
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-8
7-26
Device
Type
2N4339
2N4340
2N4341
2N4354
2N4355
2N4356
2N4381
2N4384
2N4386
2N4391
2N4392
2N4393
2N4400
2N4401
2N4402
2N4403
2N4409
2-10
Sprague
Type
Ratings
(Page)
TMPF4338
TP4338
2N4338
THJ4339
TMPF4339
TP4339
2N4339
THJ4340
TMPF4340
TP4340
2N4340
THJ4341
TMPF4341
TP4341
2N4341
THC4354
TP4354
TPQ4354
THC4355
TP4355
THC4356
TP4356
THJ4381
TMPF4381
TP4381
2N4381
THC4384
TP4384
THC4386
TP4386
THJ4391
TMPF4391
TP4391
2N4391
THJ4392
TMPF4392
TP4392
2N4392
THJ4393
TMPF4393
TP4393
2N4393
THC4400
2N4400
THC4401
TMPT4401
2N4401
THC4402
TMPT4402
2N4402
THC4403
TMPT4403
2N4403
THC4409
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-24
3-54
3-45
3-58
3-17
3-40
5-5
3-17
3-40
3-17
3-40
3-28
3-57
3-49
3-62
3-6
3-32
3-6
3-32
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-24
3-54
3-45
3-60
3-6
3-32
3-6
3-51
3-32
3-17
3-53
3-40
3-17
3-53
3-40
3-6
Sprague Package
Process (Page)
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
DJC
DJC
DJC
DJC
DJC
DJC
DJC
PJ32
PJ32
PJ32
PJ32
BBC
JGA
SBC
JGA
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
DCA
DCA
DCA
DCA
DCA
DDA
DDA
ODA
ODA
DDA
DDA
BAA
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-8
7-24
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-2
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
ALPHANUMERIC INDEX
Device
Type
2N441D
2N4413
2N4415
2N4416
2N4416A
2N4424
2N4856
2N4856A
2N4857
2N4857A
2N4858
2N4858A
2N4859
2N4859A
2N4860
2N4860A
Sprague
Type
2N4409
THC4410
2N4410
THC4413
TP4413
THC4415
TP4415
THJ4416
TMPF4416
TP4416
2N4416
THJ4416A
TMPF4416A
TP4416A
2N4416A
THC4424
2N4424
THJ4856
TMPF4856
TP4856
2N4856
THJ4856A
TMPF4856A
TP4856A
2N4856A
THJ4857
TMPF4857
TP4857
2N4857
THJ4857A
TMPF4857A
TP4857A
2N4857A
THJ4858
TMPF4858
TP4858
2N4858
THJ4858A
TMPF4858A
TP4858A
2N4858A
THJ4859
TMPF4859
TP4859
2N4859
THJ4859A
TMPF4859A
TP4859A
2N4859A
THJ4860
TMPF4860
TP4860
2N4860
THJ4860A
Ratings
(Page)
3-32
3-6
3-32
3-17
3-40
3-17
3-40
3-24
3-54
3-45
3-60
3-25
3-54
3-45
3-60
3-6
3-32
3-25
3-54
3-45
3-60
3-25
3-54
3-45
3-60
3-25
3-54
3-45
3-60
3-25
3-54
3-45
3-60
3-25
3-54
3-45
3-60
3-25
3-55
3-46
3-60
3-25
3-55
3-46
3-60
3-25
3-55
3-46
3-60
3-25
3-55
3-46
3-60
3-25
Sprague Package
Process (Page)
FEE
BAA
FEE
BOA
JFA
BOA
JFA
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
BBC
JGA
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-9
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
Device
Type
2N4861
2N4861A
2N4867
2N4868
2N4869
2N4916
2N4917
2N4924
2N4926
2N4927
2N4944
2N4945
2N4946
2N4951
2N4952
2N4953
2N4954
2N4964
2N4965
2N4966
2N4967
2N4968
2N4969
2-11
Sprague
Type
TMPF486DA
TP4860A
2N4860A
THJ4861
TMPF4861
TP4861
2N4861
THJ4861A
TMPF4861A
TP4861A
2N4861A
THJ4867
TMPF4867
TP4867
THJ4868
TMPF4868
TP4868
THJ4869
TMPF4869
TP4869
THC4916
2N4916
THC4917
2N4917
THC4924
THC4926
TP4926
THC4927
TP4927
THC4944
2N4944
THC4945
2N4945
THC4946
2N4946
THC4951
2N4951
THC4952
2N4952
THC4953
2N4953
THC4954
2N4954
THC4964
2N4964
THC4965
2N4965
THC4966
2N4966
THC4967
2N4967
THC4968
2N4968
THC4969
Ratings
(Page)
3-55
3-46
3-60
3-25
3-55
3-46
3-60
3-25
3-55
3-46
3-60
3-25
3-55
3-46
3-25
3-55
3-46
3-25
3-55
3-46
3-17
3-40
3-17
3-40
3-6
3-6
3-32
3-6
3-32
3-6
3-32
3-7
3-32
3-7
3-32
3-7
3-32
3-7
3-32
3-7
3-32
3-7
3-32
3-17
3-40
3-17
3-40
3-7
3-32
3-7
3-32
3-7
3-32
3-7
Sprague Package
Process (Page)
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
BTB
BTB
BTB
BTB
AJA
OVA
BLA
OVA
BLA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
BXE
BXE
BXE
BXE
BAA
FEE
BAA
FEE
BAA
FEE
BBC
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-8
7-26
7-8
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
I
ALPHANUMERIC INDEX
Device
Type
2N4970
2N4971
2N4972
2N5018
2N5019
2N5020
2N5021
2N5033
2N5045
2N5046
2N5047
2N5058
2N5059
2N5069
2N5078
2N5086
2N5087
2N5088
2N5089
2N5103
Sprague
Type
Ratings
(Page)
2N4969
THC4970
2N4970
THC4971
2N4971
THC4972
2N4972
THJ5018
TMPF5018
TP5018
2N5018
THJ5019
TMPF5019
TP5019
2N5019
THJ5020
TMPF5020
TP5020
2N5020
THJ5021
TMPF5021
TP5021
2N5021
THJ5033
TMPF5033
TP5033
THJ5045
2N5045
THJ5046
2N5046
THJ5047
2N5047
THC5058
TP5058
THC5059
TP5059
THC5069
THJ5078
TMPF5078
TP5078
2N5078
THC5086
TMPT5086
2N5086
THC5087
TMPT5087
2N5087
THC5088
TMPT5088
2N5088
THC5089
TMPT5089
2N5089
THJ5103
3-32
3-7
3-32
3-17
3-40
3-17
3-40
3-28
3-57
3-49
3-62
3-28
3-57
3-49
3"-62
3-28
3-57
3-49
3-62
3-28
3-57
3-49
3-62.
3-28
3-57
3-49
3-25
3-61
3-25
3-61
3-25
3-61
3-7
3-32
3-7
3-32
3-15
3-25
3-55
3-46
3-60
3-17
3-53
3-40
3-17
3-53
3-41
3-7
3-51
3-32
3-7
3-51
3-32
3-25
Sprague Package
Process (Page)
JGA
BBC
JGA
BDA
JFA
BDA
JFA
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
BlA
BlA
BlA
BlA
FBB
NJ26
NJ26
NJ26
NJ26
BXE
BXE
BXE
BXE
BXE
BXE
FEE
FEE
FEE
FEE
FEE
FEE
NJ26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-8
7-26
7-8
7-26
7-26
7-17
7-11
7-6
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-.16
7-8
7-26
Device
Type
2N5104
2N5105
2N5114
2N5115
2N5116
2N5127
2N5128
2N5129
2N5130
2N5131
2N5132
2N5133
2N5135
2N5136
2N5137
2N5138
2N5139
2N5142
2N5163
2N5172
2-12
Sprague
Type
Ratings
(Page)
TMPF5103
TP51 03
2N5103
THJ5104
TMPF5104
TP5104
2N5104
THJ5105
TMPF5105
TP5105
2N5105
THJ5114
TMPF5114
TP5114
2N5114
THJ5115
TMPF5115
TP5115
2N5115
THJ5116
TMPF5116
TP5116
2N5116
THC5127
TP5127
THC5128
2N5128
THC5129
2N5129
THC5130
2N5130
THC5131
TP5131
THC5132
TP5132
THC5133
TP5133
THC5135
2N5135
THC5136
2N5136
THC5137
TP5137
THC5138
TP5138
THC5139
TP5139
THC5142
2N5142
THJ5163
TMPF5163
TP5163
THC5172
2N5172
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-28
3-57
3-49
3-62
3-28
3-57
3-49
3-62
3-28
3-57
3-49
3-62
3-7
3-32
3-7
3-32
3-7
3-32
3-7
3-32
3-7
3-33
3-7
3-33
3-7
3-33
3-7
3-33
3-7
3-33
3-7
3-33
3-17
3-41
3-17
3-41
3-17
3-41
3-25
3-55
3-46
3-7
3-33
Sprague Package
Process (Page)
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
FFB
FFB
BBC
JGA
BBC
JGA
DMA
DMA
BAA
FEE
BAA
FEE
BAA
FEE
DAC
JlA
DAC
JlA
DAC
JLA
BXE
BXE
BTB
BTB
BDA
JFA
NJ26
NJ26
NJ26
BBC
JGA
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-26
7-9
ALPHANUMERIC INDEX
Device
Type
2N5174
2N5189
2N5190
2N5191
2N5192
2N5193
2N5194
2N5195
2N5196
2N5197
2N5198
2N5199
2N5209
2N5210
2N5219
2N5220
2N5221
2N5223
2N5225
2N5226
2N5227
2N5232
2N5232A
2N5245
2N5246
2N5247
2N5248
2N5249
Sprague
Type
THC5174
2N5174
THC5189
TP5189
THC5190
THC5191
THC5192
THC5193
THC5194
THC5195
THJ5196
2N5196
THJ5197
2N5197
THJ5198
2N5198
THJ5199
2N5199
THC5209
2N5209
THC5210
2N5210
THC5219
2N5219
THC5220
2N5220
THC5221
2N5221
THC5223
2N5223
THC5225
2N5225
THC5226
2N5226
THC5227
2N5227
THC5232
2N5232
THC5232A
2N5232A
THJ5245
TMPF5245
TP5245
THJ5246
TMPF5246
TP5246
THJ5247
TMPF5247
TP5247
THJ5248
TMPF5248
2N5248
THC5249
2N5249
Ratings
(Page)
Sprague Package
Process (Page)
3-7
3-33
3-7
3-33
3-15
3-15
3-15
3-23
3-23
3-23
3-25
3-61
3-25
3-61
3-25
3-61
3-25
3-61
3-7
3-33
3-7
3-33
3-7
3-33
3-7
3-33
3-17
3-41
3-7
3-33
3-7
3-33
3-17
3-41
3-17
3-41
3-7
3-33
3-7
3-33
3-25
3-55
3-46
3-25
3-55
3-46
3-25
3-55
3-46
3-25
3-55
3-46
3-7
3-33
BAA
FEE
BHB
BHB
FCB
FCB
FCB
FOB
FDB
FOB
NJ350
NJ350
NJ350
NJ350
NJ350
NJ350
NJ350
NJ350
BAA
FEE
BAA
FEE
FFB
FFB
BBC
JGA
BOA
JFA
FFB
FFB
BAA
FEE
BOA
BXE
BXE
BXE
BAA
FEE
BAA
FEE
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
BAA
FEE
7-26
7-9
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-9
7-26
7-9
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-9
Device
Type
Sprague
Type
2N5249A
THC5249A
2N5249A
THC5305
2N5305
THC5306
2N5306
THC5307
2N5307
THC5308
2N5308
THC5310
2N5310
THC5333
THC5354
2N5354
THC5355
2N5355
THC5356
2N5356
THJ5358
TMPF5358
TP5358
2N5358
THJ5359
TMPF5359
TP5359
2N5359
THJ5360
TMPF5360
TP5360
2N5360
THJ5361
TMPF5361
TP5361
2N5361
THJ5362
TMPF5362
TP5362
2N5362
THJ5363
TMPF5363
TP5363
2N5363
THJ5364
TMPF5364
TP5364
2N5364
THC5365
2N5365
THC5366
2N5366
THC5367
2N5367
THC5368
2N5305
2N5306
2N5307
2N5308
2N5310
2N5333
2N5354
2N5355
2N5356
2N5358
2N5359
2N5360
2N5361
2N5362
2N5363
2N5364
2N5365
2N5366
2N5367
2N5368
2-13
Ratings
(Page)
3-7
3-33
3-7
3-33
3-7
3-33
3-7
3-33
3-7
3-33
3-8
3-33
3-23
3-18
3-41
3-18
3-41
3-18
3-41
3-25
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-25
3-55
3-46
3-58
3-18
3-41
3-18
3-41
3-18
3-41
3-8
Sprague Package
Process (Page)
BAA
FEE
TPM
TPM
TPM
TPM
TPM
TPM
TPM
TPM
BAA
FEE
FAA
BOA
JFA
BOA
JFA
BOA
JFA
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
BOA
JFA
BOA
JFA
BOA
JFA
DCA
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-9
7-26
7-9
7-26
7-9
7-26
ALPHANUMERIC INDEX
Device
Type
2N5369
2N5370
2N5371
2N5372
2N5373
2N5374
2N5375
2N5376
2N5377
2N5378
2N5379
2N5380
2N5381
2N5382
2N5383
2N5397
2N5398
2N5400
2N5401
2N5418
2N5419
2N5420
2N5432
Sprague
Type
Ratings
(Page)
TP5368
THC5369
TP5369
THC5370
TP5370
THC5371
TP5371
THC5372
TP5372
THC5373
TP5373
THC5374
TP5374
THC5375
TP5375
THC5376
TP5376
THC5377
TP5377
THC5378
TP5378
THC5379
TP5379
THC5380
TP5380
THC5381
TP5381
THC5382
TP5382
THC5383
TP5383
THJ5397
TMPF5397
TP5397
2N5397
THJ5398
TMPF5398
TP5398
2N5398
THC5400
2N5400
TPQ5400
THC5401
TMPT5401
2N5401
TPQ5401
THC5418
2N5418
THC5419
2N5419
THC5420
2N5420
THJ5432
2N5432
3-33
3-8
3-33
3-8
3-33
3-8
3-33
3-18
3-41
3-18
3-41
3-18
3-41
3-18
3-41
3-8
3-33
3-8
3-33
3-18
3-41
3-18
3-41
3-8
3-33
3-8
3-33
3-18
3-41
3-18
3-41
3-25
3-55
3-46
3-60
3-25
3-55
3-46
3-60
3-18
3-41
5-5
3-18
3-53
3-41
5-5
3-8
3-33
3-8
3-33
3-8
3-33
3-25
3-60
Sprague Package
Process (Page)
DCA
DCA
DCA
DCA
DCA
DCA
DCA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BBC
JGA
BBC
JGA
BOA
JFA
BOA
JFA
FFB
FFB
FFB
FFB
BTB
BTB
BTB
BTB
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
BCA
VHB
VHB
BCA
BCA
VHB
VHB
BBC
JGA
BBC
JGA
BBC
JGA
NJ903
NJ903
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
Device
Type
2N5433
2N5434
2N5447
2N5448
2N5449
2N5450
2N5451
2N5457
2N5458
7~26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-4
2N5459
2N5460
2N5461
2N5462
2N5484
2N5485
2N5486
2N5545
2N5546
2N5547
2N5550
2N5551
2-14
Sprague
Type
Ratings
(Page)
THJ5433
2N5433
THJ5434
2N5434
THC5447
TP5447
THC5448
TP5448
THC5449
TP5449
THC5450
TP5450
THC5451
TP5451
THJ5457
TMPF5457
2N5457
THJ5458
TMPF5458
2N5458
THJ5459
TMPF5459
2N5459
THJ5460
TMPF5460
2N5460
THJ5461
TMPF5461
2N5461
THJ5462
TMPF5462
2N5462
THJ5484
TMPF5484
2N5484
THJ5485
TMPF5485
2N5485
THJ5486
TMPF5486
2N5486
THJ5545
2N5545
THJ5546
2N5546
THJ5547
2N5547
THC5550
TMPT5550
2N5550
TPQ5550
THC5551
TMPT5551
2N5551
3-25
3-60
3-25
3-60
3-18
3-41
3-18
3-41
3-8
3-33
3-8
3-33
3-8
3-33
3-25
3-55
3-46
3-25
3-55
3-46
3-26
3-55
3-46
3-28
3-57
3-49
3-28
3-57
3-49
3-28
3-57
3-49
3-26
3-55
3-46
3-26
3-55
3-46
3-26
3-55
3-46
3-26
3-61
3-26
3-61
3-26
3-61
3-8
3-51
3-33
5-5
3-8
3-51
3-33
Sprague Package
Process (Page)
NJ903
NJ903
NJ903
NJ903
BOA
JFA
BOA
JFA
BBC
JGA
BBC
JGA
BBC
JGA
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
VXA
VXA
VXA
VXA
VXA
VXA
VXA
7-26
7-4
7-26
7-4
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-16
7-8
7-24
7-26
7-16
7-8
ALPHANUMERIC INDEX
Device
Type
2N5555
2N5556
2N5557
2N5558
2N5561
2N5562
2N5563
2N5638
2N5639
2N5640
2N5653
2N5654
2N5655
2N5656
2N5668
2N5669
2N5670
2N5770
2N5772
2N5810
2N5811
2N5812
Sprague
Type
TPQ5551
THJ5555
TMPF5555
2N5555
THJ5556
TMPF5556
TP5556
2N5556
THJ5557
TMPF5557
TP5557
2N5557
THJ5558
TMPF5558
TP5558
2N5558
2N5561
2N5562
2N5563
THJ5638
TMPF5638
2N5638
THJ5639
TMPF5639
2N5639
THJ5640
TMPF5640
2N5640
THJ5653
TMPF5653
2N5653
THJ5654
TMPF5654
2N5654
THC5655
THC5656
THJ5668
TMPF5668
TP5668
THJ5669
TMPF5669
TP5669
THJ5670
TMPF5670
TP5670
THC5770
2N5770
THC5772
2N5772
THC5810
TP5810
THC5811
TP5811
THC5812
Ratings
(Page)
5-5
3-26
3-55
3-46
3-26
3-55
3-46
3-59
3-26
3-55
3-46
3-59
3-26
3-55
3-46
3-59
3-61
3-61
3-61
3-26
3-55
3-46
3-26
3-55
3-46
3-26
3-55
3-46
3-26
3-55
3-46
3-26
3-55
3-46
3-8
3-8
3-26
3-55
3-46
3-26
3-55
3-46
3-26
3-55
3-46
3-8
3-33
3-8
3-33
3-8
3-34
3-18
3-41
3-8
Sprague Package
Process (Page)
VXA
NJ26
NJ26
NJ26
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ35D
NJ35D
NJ350
NJ132
NJ132
NJ132
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
OVA
OVA
NJ16
NJ16
NJ16
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
DMA
DMA
BJB
BJB
DAC
JLA
BFA
JMA
DAC
7-24
7-26
7--17
7-11
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-5
7-5
7-5
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-26
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
Device
Type
2N5813
2N5814
2N5815
2N5816
2N5817
2N5818
2N5819
2N5820
2N5821
2N5822
2N5823
2N5824
2N5825
2N5826
2N5827
2N5828
2N5830
2N5831
2N5832
2N5855
2N5856
2N5857
2N5858
2N5911
2N5912
2N5949
2-15
Sprague
Type
TP5812
THC5813
TP5813
THC5814
TP5814
THC5815
TP5815
THC5816
TP5816
THC5817
TP5817
THC5818
TP5818
THC5819
TP5819
THC5820
TP5820
THC5821
TP5821
THC5822
TP5822
THC5823
TP5823
THC5824
TP5824
THC5825
TP5825
THC5826
TP5826
THC5827
TP5827
THC5828
TP5828
THC5830
2N5830
THC5831
2N5831
THC5832
2N5832
THC5855
TP5855
THC5856
TP5856
THC5857
TP5857
THC5858
TP5858
THJ5911
2N5911
THJ5912
2N5912
THJ5949
TMPF5949
TP5949
Ratings
(Page)
3-34
3-18
3-41
3-8
3-34
3-18
3-41
3-8
3-34
3-18
3-41
3-8
3-34
3-18
3-41
3-8
3-34
3-18
3-41
3-8
3-34
3-18
3-41
3-8
3-34
3-8
3-34
3-8
3-34
3-8
3-34
3-8
3-34
3-8
3-34
3-8
3-34
3-8
3-34
3-18
3-41
3-8
3-34
3-18
3-41
3-8
3-34
3-26
3-61
3-26
3-61
3-26
3-55
3-46
Sprague Package
Process (Page)
JLA
BFA
JMA
DAC
JLA
BFA
JMA
DAC
JLA
DFC
JMA
DAC
JLA
DFC
JMA
DAC
JLA
BFA
JMA
DAC
JLA
BFA
JMA
FFB
FFB
BAA
FEE
BAA
FEE
BAA
FEE
BAA
JGA
VAB
VAB
VAB
VAB
VAB
VAB
DJC
DJC
DSA
DID
DJC
DJC
DSA
DID
NJ28D
NJ28D
NJ28D
NJ28D
NJ32
NJ32
NJ32
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-7
7-26
7-7
7-26
7-17
7-11
ALPHANUMER~INDEX
Device
Type
2N5950
2N5951
2N5952
2N5953
2N5961
2N5962
2N5998
2N5999
2N6008
2N6009
2N6034
2N6035
2N6036
2N6037
2N6038
2N6039
2N6076
2N6222
2N6224
2N6303
2N6315
2N6316
2N6317
2N6318
2N6426
2N6427
2N6428
2N6429
Sprague
Type
THJ5950
TMPF5950
TP5950
THJ5951
TMPF5951
TP5951
THJ5952
TMPF5952
TP5952
THJ5953
TMPF5953
TP5953
THC5961
TP5961
THC5962
TP5962
THC5998
2N5998
THC5999
2N5999
THC6008
2N6008
THC6009
2N6009
THC6034
THC6035
THC6036
THC6037
THC6038
THC6039
THC6076
2N6076
THC6222
TP6222
THC6224
TP6224
THC6303
THC6315
THC6316
THC6317
THC6318
THC6426
2N6426
TPQ6426
THC6427
TMPT6427
2N6427
TPQ6427
THC6428
TMPT6428
2N6428
THC6429
TMPT6429
2N6429
Ratings
(Page)
Sprague Package
Process (Page)
3-26
3-55
3-46
3-26
3-56
3-47
3-26
3-56
3-47
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
BAA
FEE
BAA
FEE
BBC
JGA
BOA
JGA
BBC
JGA
BOA
JFA
YJA
YJA
YJA
YFA
YFA
YFA
BOA
JFA
BAA
FEE
BAA
FEE
FAA
FBB
FBB
FDB
FDB
TPM
TPM
TPM
TPM
TPM
TPM
TPM
BAA
FEE
FEE
BAA
FEE
FEE
~26
3-56
3-47
3-8
3-34
3-8
3-34
3-8
3-34
3-18
3-41
3-8
3-34
3-18
3-41
3-23
3-23
3-23
3-15
3-15
3-15
3-18
3-41
3-9
3-34
3-9
3-34
3-23
3-15
3-15
3-23
3-23
3-9
3-34
5-5
3-9
3-51
3-34
5-5
3-9
3-51
3-34
3-9
3-51
3-34
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-8
7-26
7-8
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-9
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-26
7-16
7-8
Device
Type
2N6449
2N6450
2N6451
2N6452
2N6453
2N6454
2N6714
BAR18
BAS16
BAS19
BAS21
BAV70
BAV74
BAV99
BAW56
BC107
BC107A
BC107B
BC108
BC108A
BC108B
BC108C
BC109
BC109B
BC109C
BC167
BC167A
BC167B
BC168
BC168A
BC168B
BC168C
2-16
Sprague
Type
Ratings
(Page)
Sprague Package
Process (Page)
THJ6449
TP6449
2N6449
THJ6450
TP6450
2N6450
THJ6451
TMPF6451
TP6451
2N6451
THJ6452
TMPF6452
TP6452
2N6452
THJ6453
TMPF6453
TP6453
2N6453
THJ6454
TMPF6454
TP6454
2N6454
THC6714
BAR18
BAS16
BAS19
BAS21
BAV70
BAV74
BAV99
BAW56
THBC107
THBC107A
THBC107B
THBC108
THBC108A
THBC108B
THBC108C
THBC109
THBC109B
THBC109C
THBC167
BC167
THBC167A
BC167A
THBC167B
BC167B
THBC168
BC168
THBC168A
BC168A
THBC168B
BC168B
THBC168C
3-26
3-47
3-59
3-26
3-47
3-59
3-26
3-56
3-47
3-59
3-26
3-56
3-47
3-59
3-26
3-56
3-47
3-59
3-26
3-56
3-47
3-59
3-9
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
NJ42
NJ42
NJ42
NJ42
NJ42
NJ42
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
NJ132L
FBB
BKD
TSS
TSB
TSO
DBA
DBA
TSB
DOB
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
7-26
7-11
7-3
7-26
7-11
7-3
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-17
7-11
7-6
7-26
7-18
7-18
7-18
7-18
7-19
7-19
7-20
7-21
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
ALPHANUMERIC INDEX
Device
Type
BC169
BC169B
BC169C
BC177
BC177A
BC177B
BC178
BC178A
BC178B
BC178C
BC179
BC179B
BC179C
BC182
BC182A
BC182B
BC183
BC183A
BC183B
BC183C
BC184
BC184B
BC184C
BC212
BC212A
BC212B
BC213
BC213A
BC213B
BC213C
BC214
BC214A
Sprague
Type
BC168C
THBC169
BC169
THBC169B
BC169B
THBC169C
BC169C
THBC177 .
THBC177A
THBC177B
THBC178
THBC178A
THBC178B
THBC178C
THBC179
THBC179B
THBC179C
THBC182
BC182L
THBC182A
BC182LA
THBC182B
BC182LB
THBC183
BC183L
THBC183A
BC183LA
THBC183B
BC183LB
THBC183C
BC183LC
THBC184
BC184L
THBC184B
BC184LB
THBC184C
BC184LC
THBC212
BC212L
THBC212A
BC212LA
THBC212B
BC212LB
THBC213
BC213L
THBC213A
BC213LA
THBC213B
BC213LB
THBC213C
BC213LC
THBC214
BC214L
THBC214A
Ratings
(Page)
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-13
3-38
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
Sprague Package
Process (Page)
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
Device
Type
BC214B
BC214C
BC237
BC237A
BC237B
BC238
BC238A
BC238B
BC238C
BC239
BC239B
BC239C
BC257
BC257A
BC257B
BC258
BC258A
BC258B
BC258C
BC259
BC259B
BC259C
BC264A
BC264B
BC264C
BC2640
BC307
BC307A
BC307B
BC308
BC308A
BC308B
BC308C
2-17
Sprague
Type
Ratings
(Page)
BC214LA
THBC214B
BC214LB
THBC214C
BC214LC
THBC237
THBC237A
THBC237B
THBC238
THBC238A
THBC238B
THBC238C
THBC239
THBC239B
THBC239C
THBC257
BC257
THBC257A
BC257A
THBC257B
BC257B
THBC258
BC258
THBC258A
BC258A
THBC258B
BC258B
THBC258C
BC258C
THBC259
BC259
THBC259B
BC259B
THBC259C
BC259C
THJBC264A
TPBC264A
TMPFBC264A
THJBC264B
TPBC264B
TMPFBC264B
THJBC264C
TPBC264C
TMPFBC264C
THJBC2640
TPBC2640
TMPFBC2640
THBC307
THBC307A
THBC307B
THBC308
THBC308A
THBC308B
THBC308C
3-44
3-21
3-44
3-21
3-44
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-21
3-44
3-27
3-48
3-56
3-27
3-48
3-56
3-27
3-48
3-56
3-27
3-48
3-56
3-21
3-21
3-21
3-21
3-21
3-21
3-21
Sprague Package
Process (Page)
JFA
BOA
JFA
BOA
JFA
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
BOA
JFA
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
BOA
BOA
BOA
BOA
BOA
BOA
BOA
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-13
7-17
7-26
7-13
7-17
7-26
7-13
7-17
7-26
7-13
7-17
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
Device
Type
BC309
BC309B
BC309C
BC317
BC317A
BC317B
BC318
BC318A
BC318B
BC318C
BC319
BC319B
BC319C
BC327
BC32716
BC32725
BC328
BC32816
BC32825
BC337
BC33716
BC33725
BC338
BC33816
BC33825
BC368
BC369
BC413
BC413B
BC413C
BC414
BC414B
BC414C
BC415
BC415A
BC415B
BC415C
BC416
BC416A
BC416B
BC416C
BC485
BC485A
BC485B
Sprague
Type
THBC309
THBC309B
THBC309C
THBC317
BC317
THBC317A
BC317A
THBC317B
BC317B
THBC318
BC318
THBC318A
BC318A
THBC318B
BC318B
THBC318C
BC318C
THBC319
BC319
THBC319B
BC319B
THBC319C
BC319C
THBC327
THBC32716
THBC32725
THBC328
THBC32816
THBC32825
THBC337
THBC33716
THBC33725
THBC338
THBC33816
THBC33825
THBC368
THBC369
THBC413
THBC413B
THBC413C
THBC414
THBC414B
THBC414C
THBC415
THBC415A
THBC415B
THBC415C
THBC416
THBC416A
THBC416B
THBC416C
THBC485
THBC485A
THBC485B
Ratings
(Page)
3-21
3-21
3-21
3-13
3-38
3-13
3-38
3-14
3-39
3-14
3-39
3-14
3-39
3-14
3-39
3-14
3-39
3-14
3-39
3-14
3-39
3-14
3-39
3-21
3-22
3-22
3-22
3-22
3-22
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-22
3-14
3-14
3-14
3-14
3-14
3-14
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-14
3-14
3-14
Sprague Package
Process (Page)
BDA
BDA
BDA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
BBC
JGA
DJC
DJC
DJC
DJC
DJC
DJC
DID
DID
DID
DID
DID
DID
DID
DJC
BAA
BAA
BAA
BAA
BAA
BAA
BXE
BXE
BXE
BXE
BXE
BXE
BXE
BXE
DAC
DAC
DAC
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
Sprague
Type
Ratings
(Page)
BC516
BC517
BC546
BC546A
BC546B
BC547
BC547A
BC547B
BC548
BC548A
BC548B
BC556
BC556A
BC556B
BC557
BC557A
BC557B
BC558
BC558A
BC558B
BC635
BC636
BC637
BC638
BC639
BC640
BCW29
BCW30
BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW61A
BCW61B
BCW61C
BCW61D
BCW65A
BCW65B
BCW66F
BCW66G
BCW67A
BCW67B
BCW68F
BCW68G
BCW69
BCW70
BCW71
BCW72
BCX17
BCX18
BCX19
THBC516
THBC517
THBC546
THBC546A
THBC546B
THBC547
THBC547A
THBC547B
THBC548
THBC548A
THBC548B
THBC556
THBC556A
THBC556B
THBC557
THBC557A
THBC557B
THBC558
THBC558A
THBC558B
THBC635
THBC636
THBC637
THBC638
THBC639
THBC640
BCW29
BCW30
BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW61A
BCW61B
BCW61C
BCW61D
BCW65A
BCW65B
BCW66F
BCW66G
BCW67A
BCW67B
BCW68F
BCW68G
BCW69
BCW70
BCW71
BCW72
BCX17
BCX18
BCX19
3-22
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-14
3-22
3-14
3-22
3-14
3-22
3-52
3-52
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-52
3-52
3-52
3-52
3-50
3-50
3-50
3-50
3-52
3-52
3-52
3-52
3-52
3-52
3-50
3-50
3-52
3-52
3-50
2-18
Sprague Package
Process (Page)
BOB
TPM
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BDA
BDA
BDA
BDA
BDA
BDA
BDA
BDA
BDA
DAC
BFA
DAC
BFA
DAC
BFA
BXE
BXE
FEE
FEE
FEE
FEE
FEE
FEE
FEE
BXE
BXE
BXE
BXE
JLA
JLA
JLA
JLA
JMA
JMA
JMA
JMA
BXE
BXE
FEE
FEE
JMA
JMA
JLA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
ALPHANUMERIC INDEX
Device
Type
BCX20
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
BCX71H
BCX71J
BCX71K
BF244A
BF244B
BF244C
BF246A
BF246B
BF246C
BF256A
BF256B
BF256C
BFR30
BFR31
BSR13
BSR18
BSS63
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C1e
Sprague
Type
BCX20
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
BCX71H
BCX71J
BCX71K
THJBF244A
TMPFBF244A
BF244A
THJBF244B
TMPFBF244B
BF244B
THJBF244C
TMPFBF244C
BF244C
THJBF246A
TMPFBF246A
BF246A
THJBF246B
TMPFBF246B
BF246B
THJBF246C
TMPFBF246C
BF246C
THJBF256A
TMPFBF256A
BF256A
THJBF256B
TMPFBF256B
BF256B
THJBF256C
TMPFBF256C
BF256C
BFR30
BFR31
BSR13
BSR18
BSS63
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
Ratings
(Page)
3-50
3-50
3-50
3-50
3-50
3-52
3-52
3-52
3-52
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-47
3-47
3-50
3-52
3-52
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
Sprague Package
Process (Page)
JLA
FEE
FEE
FEE
FEE
BXE
BXE
BXE
BXE
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
DCA
BTB
BCA
ZAB
ZAB
ZAB
ZAB
ZCB
ZCB
ZCB
ZCB
ZCB
ZCB
ZCB
ZCB
ZCB
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-11
7-11
7-16
7-16
7-16
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
Device
Type
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
016P1
029A4
029A5
029E1
029E2
029E4
029E5
029E6
029E7
2-19
Sprague
Type
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
016P1C
016P1
029A4C
029A4
029A5C
029A5
029E1C
029E1
029E2C
029E2
029E4C
029E4
029E5C
029E5
029E6C
029E6
029E7C
Ratings
(Page)
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-71
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-75
3-12
3-37
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-43
3-20
Sprague Package
Process (Page)
ZKB
ZKB
ZKB
ZKB
ZKB
ZKB
ZKB
ZEB
ZEB
ZEB
ZEB
ZEB
ZEB
ZEB
ZEB
ZEB
ZAA
ZAA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZEA
ZEA
ZEA
TPM
TPM
BOA
JFA
BOA
JFA
BFA
JMA
BFA
JMA
BFA
JMA
BFA
JMA
BFA
JMA
BFA
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
I
ALPHANUMERIC INDEX
Device
Type
D29E9
D29E10
D33D21
D33D22
D33D24
D33D25
D33D26
D33D27
D33D29
D33D30
D40D4
D40D5
D40D10
D40D11
D41D4
D41D5
D41D10
D41D11
J105
J106
J107
J108
J109
J110
J111
J111A
J112
J112A
J113
Sprague
Type
D29E7
D29E9C
D29E9
D29E10C
D29E10
D33D21C
D33D21
D33D22C
D33D22
D33D24C
D33D24
D33D25C
D33D25
D33D26C
D33D26
D33D27C
D33D27
D33D29C
D33D29
D33D30C
D33D30
D40D4C
D40D5C
D40D10C
D40D11 C
D41D4C
D41D5C
D41D10C
D41D11C
THJJ105
TPJ105
THJJ106
TPJ106
THJJ107
TPJ107
THJJ108
TPJ108
THJJ109
TPJ109
THJJ110
TPJ110
THJJ111
TMPFJ111
J111
THJJ111A
TMPFJ111A
J111A
THJJ112
TMPFJ112
J112
THJJ112A
TMPFJ112A
J112A
THJJ113
Ratings
(Page)
3-43
3-20
3-43
3-20
3-43
3-12
3-37
3-12
3-37
3-12
3-37
3-12
3-37
3-12
3-38
3-12
3-38
3-12
3-38
3-12
3-38
3-12
3-12
3-12
3-12
3-20
3-20
3-20
3-20
3-27
3-48
3-27
3-48
3-27
3-48
3-27
3-48
3-27
3-48
3-27
3-48
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
Sprague Package
Process (Page)
JMA
BFA
JMA
BFA
JMA
DAC
JLA
DAC
JLA
DAC
JLA
DAC
JLA
DAC
JLA
DAC
JLA
DAC
JLA
DAC
JLA
DID
DID
DID
DID
DJC
DJC
DJC
DJC
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-9
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-13
7-26
7-13
7-26
7-13
7-26
7-13
7-26
7-13
7-26
7-13
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
Device
Type
J113A
J174
J175
J176
J177
J201
J202
J203
J210
J211
J212
J230
J231
J232
J270
J271
J300A
J300B
2-20
Sprague
Type
TMPFJ113
J113
THJJ113A
TMPFJ113A
J113A
THJJ174
TMPFJ174
J174
THJJ175
TMPFJ175
J175
THJJ176
TMPFJ176
J176
THJJ177
TMPFJ177
J177
THJJ201
TMPFJ201
J201
THJJ202
TMPFJ202
J202
THJJ203
TMPFJ203
J203
THJJ210
TMPFJ210
J210
THJJ211
TMPFJ211
J211
THJJ212
TMPFJ212
J212
THJJ230
TMPF230
J230
THJJ231
TMPF231
J231
THJJ232
TMPF232
J232
THJJ270
TMPFJ270
J270
THJJ271
TMPFJ271
J271
THJJ300A
TMPFJ300A
J300A
THJJ300B
Ratings
(Page)
3-56
3-47
3-27
3-56
3-47
3-29
3-57
3-49
3-29
3-57
3-49
3-29
3-57
3-49
3-29
3-57
3-49
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-29
3-57
3-49
3-29
3-57
3-49
3-27
3-56
3-47
3-27
Sprague Package
Process (Page)
NJ99
NJ99
NJ99
NJ99
NJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ32
NJ32
NJ32
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
NJ16
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
NJ26L
NJ26L
NJ26L
NJ26L
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-12
7-26
7-17
7-12
7-26
7-17
7-13
7-26
ALPHANUMERIC INDEX
Device
Type
J300C
J304
J305
J308
J309
J310
MPF102
MPF103
MPF104
MPF105
MPF106
MPF107
MPF108
MPF109
MPF110
MPF111
MPF112
MPF820
MPS404
MPS404A
MPS2712
MPS2714
MPS2716
MPS2923
MPS2924
MPS2925
MPS2926
MPS3390
Sprague
Type
TMPFJ300S
J300S
THJJ300C
TMPFJ300C
J300C
THJJ304
TMPFJ304
J304
THJJ305
TMPFJ305
J305
THJJ308
TMPFJ308
TPJ308
THJJ309
TMPFJ309
TPJ309
THJJ310
TMPFJ310
TPJ310
MPF102
MPF103
MPF104
MPF105
MPF106
MPF107
MPF108
MPF109
MPF110
MPF111
MPF112
MPF820C
MPS404C
TMPT404
MPS404
MPS404AC
TMPT404A
MPS404A
MPS2712C
MPS2712
MPS2714C
MPS2714
MPS2716C
MPS2716
MPS2923C
MPS2923
MPS2924C
MPS2924
MPS2925C
MPS2925
MPS2926C
MPS2926
MPS3390C
MPS3390
Ratings
(Page)
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-47
3-27
3-56
3-48
3-27
3-56
3-48
3-27
3-56
3-48
3-47
3-47
3-47
3-47
3-47
3-47
3-47
3-47
3-48
3-48
3-48
3-48
3-19
3-52
3-42
3-19
3-52
3-42
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
Sprague Package
Process (Page)
NJ26L
NJ26L
NJ26L
NJ26L
NJ26L
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ26
NJ32
NJ32
NJ26
NJ26
NJ26
NJ26
NJ32
NJ32
NJ32
NJ26
NJ26
SHF
SHF
SHF
SHF
SHF
SHF
SAA
FEE
SAA
FEE
SAA
FEE
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-13
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-16
7-8
7-26
7-16
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
Device
Type
MPS3391
MPS3392
MPS3393
MPS3394
MPS3395
MPS3396
MPS3397
MPS3398
MPS3402
MPS3403
MPS3404
MPS3405
MPS3414
MPS3415
MPS3416
MPS3417
MPS3563
MPS3565
MPS3566
MPS3567
MPS3568
MPS3569
MPS3638
MPS3638A
MPS3642
MPS3646
MPS3693
2-21
Sprague
Type
MPS3391C
MPS3391
MPS3392C
MPS3392
MPS3393C
MPS3393
MPS3394C
MPS3394
MPS3395C
MPS3395
MPS3396C
MPS3396
MPS3397C
MPS3397
MPS3398C
MPS3398
MPS3402C
MPS3402
MPS3403C
MPS3403
MPS3404C
MPS3404
MPS3405C
MPS3405
MPS3414C
MPS3414
MPS3415C
MPS3415
MPS3416C
MPS3416
MPS3417C
MPS3417
MPS3563C
MPS3563
MPS3565C
MPS3565
MPS3566C
MPS3566
MPS3567C
MPS3567
MPS3568C
MPS3568
MPS3569C
MPS3569
MPS3638C
TMPT3638
MPS3638
MPS3638AC
TMPT3638A
MPS3638A
MPS3642C
MPS3642
MPS3646C
MPS3693C
Ratings
(Page)
Sprague Package
Process (Page)
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-9
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-19
3-53
3-42
3-19
3-53
3-42
3-10
3-35
3-10
3-10
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
SSC
JGA
OMA
OMA
SAA
FEE
OAC
JLA
OAC
JLA
OAC
JLA
OAC
JLA
SOA
OOA
OOA
SOA
OOA
OOA
SSC
JGA
SJS
FFS
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-8
7-26
7-26
I
ALPHANUMER~INDEX
Device
Type
MPS3694
MPS3702
MPS3703
MPS3704
MPS3705
MPS3706
MPS3707
MPS3708
MPS3709
MPS3710
MPS3711
MPS3721
MPS3826
MPS3827
MPS4248
MPS4249
MPS4250
MPS4250A
MPS4354
MPS4355
MPS4356
MPS5127
MPS5131
MPS5132
MPS5133
MPS5135
MPS5136
Sprague
Type
Ratings
(Page)
MPS3693
MPS3694C
MPS3694
MPS3702C
MPS3702
MPS3703C
MPS3703
MPS3704C
MPS3704
MPS3705C
MPS3705
MPS3706C
MPS3706
MPS3707C
MPS3707
MPS3708C
MPS3708
MPS3709C
MPS3709
MPS3710C
MPS3710
MPS3711C
MPS3711
MPS3721C
MPS3721
MPS3826C
MPS3826
MPS3827C
MPS3827
MPS4248C
MPS4248
MPS4249C
MPS4249
MPS4250C
MPS4250
MPS4250AC
MPS4250A
MPS4354C
MPS4354
MPS4355C
MPS4355
MPS4356C
MPS4356
MPS5127C
MPS5127
MPS5131C
MPS5131
MPS5132C
MPS5132
MPS5133C
MPS5133
MPS5135C
MPS5135
MPS5136C
3-35
3-10
3-35
3-19
3-42
3-19
3-42
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-35
3-10
3-36
3-10
3-36
3-10
3-36
3-19
3-42
3-19
3-42
3-19
3-42
3-19
3-42
3-19
3-42
3-19
3-42
3-19
3-42
3-10
3-36
3-10
3-36
3-10
3-36
3-10
3-36
3-10
3-36
3-10
Sprague Package
Process (Page)
FFB
FFB
FFB
BOA
JFA
BOA
JFA
BBC
JGA
BBC
JGA
BBC
JGA
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BBC
JGA
BAA
FEE
BAA
FEE
BXE
BXE
BXE
BXE
BXE
BXE
BXE
BXE
DJC
DJC
DJC
DJC
DJC
DJC
FFB
FFB
BAA
FEE
BAA
FEE
BAA
FEE
DAC
JLA
DAC
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
Device
Type
MPS5137
MPS5138
MPS5139
MPS5172
MPS5305
MPS5306
MPS6512
MPS6513
MPS6514
MPS6515
MPS6516
MPS6517
MPS6518
MPS6519
MPS6520
MPS6521
MPS6522
MPS6523
MPS6530
MPS6531
MPS6532
MPS6533
MPS6534
MPS6535
MPS6541
MPS6560
MPS6561
2-22
Sprague
Type
MPS5136
MPS5137C
MPS5137
MPS5138C
MPS5138
MPS5139C
MPS5139
MPS5172C
MPS5172
MPS5305C
MPS5305
MPS5306C
MPS5306
MPS6512C
MPS6512
MPS6513C
MPS6513
MPS6514C
MPS6514
MPS6515C
MPS6515
MPS6516C
MPS6516
MPS6517C
MPS6517
MPS6518C
MPS6518
MPS6519C
MPS6519
MPS6520C
MPS6520
MPS6521C
MPS6521
MPS6522C
MPS6522
MPS6523C
MPS6523
MPS6530C
MPS6530
MPS6531C
MPS6531
MPS6532C
MPS6532
MPS6533C
MPS6533
MPS6534C
MPS6534
MPS6535C
MPS6535
MPS6541C
MPS6541
MPS6560C
MPS6560
MPS6561C
Ratings
(Page)
3-36
3-10
3-36
3-19
3-42
3-19
3-42
3-10
3-36
3-10
3-36
3-10
3-36
3-10
3-36
3-10
3-36
3-10
3-36
3-10
3-36
3-19
3-42
3-19
3-42
3-19
3-42
3-19
3-42
3-10
3-36
3-11
3-36
3-19
3-42
3-19
3-42
3-11
3-36
3-11
3-36
3-11
3-36
3-19
3-42
3-19
3-42
3-19
3-42
3-11
3-36
3-11
3-36
3-11
Sprague Package
Process (Page)
JLA
DAC
JLA
BXE
BXE
BTB
BTB
BBC
JGA
TPM
TPM
TPM
TPM
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BTB
BTB
BXE
BXE
BXE
BXE
BXE
BXE
BAA
FEE
BAA
FEE
BXE
BXE
BXE
BXE
DCA
DCA
DCA
DCA
DCA
DCA
DDA
DDA
DDA
DDA
DDA
DDA
DMA
DMA
DSA
DID
DSA
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
ALPHANUMERIC INDEX
Device
Type
MPS6562
MPS6563
MPS6564
MPS6565
MPS6566
MPS6571
MPS6573
MPS6574
MPS6575
MPS6576
MPS6601
MPS6602
MPS6651
MPS6652
MPS6714
MPS6715
MPS6716
MPS6717
MPS6728
MPS6729
MPS6733
MPS6734
MPS6735
MPS8093
MPS8097
MPS8098
MPS8099
MPS8598
MPS8599
MPSA05
Sprague
Type
MPS6561
MPS6562C
MPS6562
MPS6563C
MPS6563
MPS6564C
MPS6564
MPS6565C
MPS6565
MPS6566C
MPS6566
MPS6571C
MPS6571
MPS6573C
MPS6573
MPS6574C
MPS6574
MPS6575C
MPS6575
MPS6576C
MPS6576
MPS6601C
MPS6601
MPS6602C
MPS6602
MPS6651C
MPS6651
MPS6652C
MPS6652
MPS6714C
MPS6715C
MPS6716C
MPS6717C
MPS6728C
MPS6729C
MPS6733C
MPS6734C
MPS6735C
MPS8093C
MPS8093
MPS8097C
MPS8097
MPS8098C
MPS8098
MPS8099C
MPS8099
MPS8598C
MPS8598
MPS8599C
MPS8599
MPSA05C
TMPTA05
MPSA05
TPOA05
Ratings
(Page)
3-36
3-19
3-42
3-19
3-42
3-11
3-36
3-11
3-36
3-11
3-36
3-11
3-36
3-11
3-36
3-11
3-36
3-11
3-36
3-11
3-36
3-11
3-36
3-11
3-36
3-19
3-42
3-19
3-42
3-11
3-11
3-11
3-11
3-19
3-19
3-11
3-11
3-11
3-19
3-42
3-11
3-36
3-11
3-36
3-11
3-36
3-19
3-42
3-19
3-42
3-11
3-51
3-36
5-5
Sprague Package
Process (Page)
DID
DJC
DJC
DJC
DJC
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
BAA
FEE
DSA
DID
DSA
DID
DJC
DJC
DJC
DJC
DSA
DSA
DSA
DSA
BFA
BFA
BLA
BLA
BLA
BOA
JFA
BAA
FEE
DAC
JLA
DAC
JLA
BFA
JMA
BFA
JMA
DAC
JLA
JLA
DAC
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-24
Device
Type
MPSA06
MPSA09
MPSA10
MPSA12
MPSA13
MPSA14
MPSA18
MPSA20
MPSA25
MPSA26
MPSA27
MPSA28
MPSA29
MPSA42
MPSA43
MPSA55
MPSA56
MPSA62
MPSA63
MPSA64
2-23
Sprague
Type
MPSA06C
TMPTA06
MPSA06
TPOA06
MPSA09C
MPSA09
MPSA10C
MPSA10
MPSA12C
TMPTA12
MPSA12
MPSA13C
TMPTA13
MPSA13
MPSA14C
TMPTA14
MPSA14
MPSA18C
MPSA18
MPSA20C
TMPTA20
MPSA20
MPSA25C
MPSA25
MPSA26C
MPSA26
MPSA27C
MPSA27
MPSA28C
MPSA28
MPSA29C
MPSA29
MPSA42C
TMPTA42
MPSA42
MPSA43C
TMPTA43
MPSA43
MPSA55C
TMPTA55
MPSA55
TPOA55
MPSA56C
TMPTA56
MPSA56
TPOA56
MPSA62C
MPSA62
MPSA63C
TMPTA63
MPSA63
MPSA64C
TMPTA64
MPSA64
Ratings
(Page)
3-11
3-51
3-36
5-5
3-11
3-36
3-11
3-36
3-11
3-51
3-37
3-11
3-51
3-37
3-11
3-51
3-37
3-11
3-37
3-11
3-51
3-37
3-11
3-37
3-11
3-37
3-11
3-37
3-11
3-37
3-11
3-37
3-11
3-51
3-37
3-12
3-51
3-37
3-19
3-53
3-42
5-5
3-19
3-53
3-42
5-5
3-19
3-42
3-19
3-53
3-42
3-19
3-53
3-42
Sprague Package
Process (Page)
DAC
JLA
JLA
DAC
BAA
FEE
VRB
VRB
TPM
TPM
TPM
TPM
TPM
TPM
TPM
TPM
TPM
BAA
FEE
VRB
VRB
VRB
TPM
TPM
TPM
TPM
TPM
TPM
JEA
JEA
JEA
JEA
BLA
BLA
BLA
BLA
BLA
BLA
BFA
JMA
JMA
BFA
BFA
JMA
JMA
BFA
SRB
SRB
SRB
SRB
SRB
SRB
SRB
SRB
7-26
7-16
7-8
7-24
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-8
7-26
7-16
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-24
7-26
7-16
7-8
7-24
7-26
7-8
7-26
7-16
7-8
7-26
7-16
7-8
ALPHANUMERIC INDEX
Device
~pe
MPSA70
MPSA75
MPSA76
MPSA77
MPSA92
MPSA93
MPSD01
MPS002
MPSD03
MPSD04
MPSD05
MPSD06
MPSD51
MPSD52
MPSD53
MPSD54
MPSD55
MPSD56
MPSH81
MPSl01
MPSl51
MPSU45
MPSU95
NF5101
NF5102
NF51 03
NF5301
NF5301-1
NF5301-2
Sprague
Type
Ratings
(Page)
MPSA70C
TMPTA70
MPSA70
MPSA75C
MPSA75
MPSA76C
MPSA76
MPSA77C
MPSA77
MPSA92C
TMPTA92
MPSA92
MPSA93C
TMPTA93
MPSA93
MPSD01C
MPSD01
MPSD02C
MPSD02
MPSD03C
MPSD03
MPSD04C
MPSD04
MPSD05C
MPSD05
MPSD06C
MPSD06
MPSD51C
MPSD51
MPSD52C
MPSD52
MPSD53C
MPSD53
MPSD54C
MPSD54
MPSD55C
MPSD55
MPSD56C
MPSD56
MPSH81C
TMPTH81
MPSH81
MPSl01C
MPSl01
MPSl51C
MPSl51
MPSU45C
MPSU95C
NF5101
NF5102
NF5103
NF5301
NF5301-1
NF5301-2
3-19
3-53
3-42
3-19
3-42
3-19
3-42
3-19
3-42
3-20
3-53
3-42
3-20
3-53
3-42
3-12
3-37
3-12
3-37
3-12
3-37
3-12
3-37
3-12
3-37
3-12
3-37
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-43
3-20
3-53
3-43
3-12
3-37
3-20
3-43
3-12
3-20
3-59
3-59
3-59
3-59
3-59
3-59
Sprague Package
Process (Page)
BXE
BXE
BXE
BOB
BOB
BOB
BOB
BOB
BOB
BMA
BMA
BM/I
BMA
BMA
BMA
BlA
BLA
VXA
VXA
VXA
VXA
Sal
sal
DAC
JLA
BBC
JGA
BMA
BMA
VHB
VHB
VHB
VHB
SRB
SRB
BFA
JMA
BFA
JMA
JYA
JYA
JYA
VXA
VXA
VHB
VHB
BNB
BOB
NJ99
NJ99
NJ99
NJ01
NJ01
NJ01
7-26
7-16
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-8
7-26
7-16
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-8
7-26
7-16
7-10
7-26
7-8
7-26
7-8
7-26
7-26
7-6
7-6
7-6
7-6
7-6
7-6
Device
Type
NF5301-3
P1086
P1087
PN4091
PN4092
PN4093
PN4117
PN4118
PN4119
PN4220
PN4221
PN4222
PN4223
PN4224
PN4302
PN4303
PN4304
PN4338
PN4339
PN4391
PN4392
PN4393
PN4416
PN4856
PN4857
PN4858
PN4859
PN4860
PN4861
PN5163
THBG01
THBG02
THBa01
THBa02
THBC107
THBC107A
THBC107B
THBC108
THBC108A
THBC108B
THBC108C
THBC109
THBC109B
THBC109C
THBC167
THBC167A
THBC167B
THBC168
THBC168A
THBC168B
2-24
Sprague
Type
NF5301-3
THJP1086
TMPFP1086
P1086
THJP1087
TMPF1087
P1087
TP4091
TP4092
TP4093
TP4117
TP4118
TP4119
TP4220
TP4221
TP4222
TP4223
TP4224
TP4302
TP4303
TP4304
TP4338
TP4339
TP4391
TP4392
TP4393
TP4416
TP4856
TP4857
TP4858
TP4859
TP4860
TP4861
TP5163
THBG01
THBG02
THBa01
THBa02
THBC107
THBC107A
THBC107B
THBC108
THBC108A
THBC108B
THBC108C
THBC109
THBC109B
THBC109C
THBC167
THBC167A
THBC167B
THBC168
THBC168A
THBC168B
Ratings
(Page)
Sprague Package
Process (Page)
3-59
3-29
3-57
3-49
3-29
3-57
3-49
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-46
3-46
3-46
3-46
3-64
3-64
3-64
3-64
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
NJ01
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
NJ132
NJ132
NJ132
NJ01
NJ01
NJ01
NJ16·
NJ32
NJ32
NJ32
NJ32
NJ26
NJ26
NJ26
NJ16
NJ16
NJ132
NJ132
NJ132
NJ26
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ26
BGA
BGA
BaB
BaB
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
7-6
7-26
7-17
7-12
7-26
7-17
7-12
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
.7-26
7-26
ALPHANUMERIC INDEX
Device
Type
THBC168C
THBC169
THBC169B
THBC169C
THBC177
THBC177A
THBC177B
THBC178
THBC178A
THBC178B
THBC178C
THBC179
THBC179B
THBC179C
THBC182
THBC182A
THBC182B
THBC183
THBC183A
THBC183B
THBC183C
THBC184
THBC184B
THBC184C
THBC212
THBC212A
THBC212B
THBC213
THBC213A
THBC213B
THBC213C
THBC214
THBC214A
THBC214B
THBC214C
THBC237
THBC237A
THBC237B
THBC238
THBC238A
THBC238B
THBC238C
THBC239
THBC239B
THBC239C
THBC257
THBC257A
THBC257B
THBC258
THBC258A
THBC258B
THBC258C
THBC259
THBC259B
Sprague
Type
THBC168C
THBC169
THBC169B
THBC169C
THBC177
THBC177A
THBC177B
THBC178
THBC178A
THBC178B
THBC178C
THBC179
THBC179B
THBC179C
THBC182
THBC182A
THBC182B
THBC183
THBC183A
THBC183B
THBC183C
THBC184
THBC184B
THBC184C
THBC212
THBC212A
THBC212B
THBC213
THBC213A
THBC213B
THBC213C
THBC214
THBC214A
THBC214B
THBC214C
THBC237
THBC237A
THBC237B
THBC238
THBC238A
THBC238B
THBC238C
THBC239
THBC239B
THBC239C
THBC257
THBC257A
THBC257B
THBC258
THBC258A
THBC258B
THBC258C
THBC259
THBC259B
Ratings
(Page)
Sprague Package
Process (Page)
3-13
3-13
3-13
3-13
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-13
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
BBC
BBC
BBC
BBC
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THBC259C
THBC307
THBC307A
THBC307B
THBC308
THBC308A
THBC308B
THBC308C
THBC309
THBC309B
THBC309C
THBC317
THBC317A
THBC317B
THBC318
THBC318A
THBC318B
THBC318C
THBC319
THBC319B
THBC319C
THBC327
THBC32716
THBC32725
THBC328
THBC32816
THBC32825
THBC337
THBC33716
THBC33725
THBC338
THBC33816
THBC33825
THBC368
THBC369
THBC413
THBC413B
THBC413C
THBC414
THBC414B
THBC414C
THBC415
THBC415A
THBC415B
THBC415C
THBC416
THBC416A
THBC416B
THBC416C
THBC485
THBC485A
THBC485B
THBC516
THBC517
2-25
Sprague
Type
THBC259C
THBC307
THBC307A
THBC307B
THBC308
THBC308A
THBC308B
THBC308C
THBC309
THBC309B
THBC309C
THBC317
THBC317A
THBC317B
THBC318
THBC318A
THBC318B
THBC318C
THBC319
THBC319B
THBC319C
THBC327
THBC32716
THBC32725
THBC328
THBC32816
THBC32825
THBC337
THBC33716
THBC33725
THBC338
THBC33816
THBC33825
THBC368
THBC369
THBC413
THBC413B
THBC413C
THBC414
THBC414B
THBC414C
THBC415
THBC415A
THBC415B
THBC415C
THBC416
THBC416A
THBC416B
THBC416C
THBC485
THBC485A
THBC485B
THBC516
THBC517
Ratings
(Page)
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-13
3-13
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-21
3-22
3-22
3-22
3-22
3-22
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-22
3-14
3-14
3-14
3-14
3-14
3-14
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-14
3-14
3-14
3-22
3-14
Sprague Package
Process (Page)
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
OJC
OJC
OJC
OJC
OJC
OJC
DID
DID
DID
DID
DID
DID
DID
OJC
BAA
BAA
BAA
BAA
BAA
BAA
BXE
BXE
BXE
BXE
BXE
BXE
BXE
BXE
OAC
OAC
OAC
BOB
TPM
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMER~INDEX
Device
Type
THBC546
THBC546A
THBC546B
THBC547
THBC547A
THBC547B
THBC548
THBC548A
THBC548B
THBC556
THBC556A
THBC556B
THBC557
THBC557A
THBC557B
THBC558
THBC558A
THBC558B
THBC635
THBC636
THBC637
THBC638
THBC639
THBC640
THC697
THC699
THC718
THC760
THC760A
THC915
THC916
THC917
THC918
THC929
THC929A
THC930
THC930A
THC956
THC981
THC1420
THC1566
THC1613
THC1711
THC2017
THC2102
THC2192
THC2192A
THC2195
THC2195A
THC2218
THC2218A
THC2219
THC2219A
THC2221
Sprague
Type
THBC546
THBC546A
THBC546B
THBC547
THBC547A
THBC547B
THBC548
THBC548A
THBC548B
THBC556
THBC556A
THBC556B
THBC557
THBC557A
THBC557B
THBC558
THBC558A
THBC558B
THBC635
THBC636
THBC637
THBC638
THBC639
THBC640
THC697
THC699
THC718
THC760
THC760A
THC915
THC916
THC917
THC918
THC929
THC929A
THC930
THC930A
THC956
THC981
THC1420
THC1566
THC1613
THC1711
THC2017
THC2102
THC2192
THC2192A
THC2195
THC2195A
THC2218
THC2218A
THC2219
THC2219A
THC2221
Ratings
(Page)
Sprague Package
Process (Page)
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-14
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-22
3-14
3-22
3-14
3-22
3-14
3-22
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
OAC
BFA
OAC
BFA
OAC
BFA
BBC
OAC
BBC
BAA
BAA
BAA
BAA
OMA
OMA
BAA
BAA
BAA
BAA
BBC
BAA
BBC
BAA
BBC
BBC
OAC
OAC
OAC
OAC
OAC
OAC
BBC
OCA
BBC
OCA
BBC
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THC2221 A
THC2222
THC2222A
THC2243
THC2243A
THC2270
THC2484
THC2504
THC2509
THC2510
THC2511
THC2586
THC2604
THC2605
THC2696
THC2712
THC2714
THC2904
THC2904A
THC2905
THC2905A
THC2906
THC2906A
THC2907
THC2907A
THC2908
THC2923
THC2924
THC2925
THC2926
THC2944
THC2945
THC2946
THC3009
THC3013
THC3019
THC3020
THC3053
THC3072
THC3073
THC3107
THC3108
THC3109
THC3110
THC3114
THC3115
THC3116
THC3117
THC3120
THC3121
THC3133
THC3134
THC3135
THC3136
2-26
Sprague
Type
THC2221A
THC2222
THC2222A
THC2243
THC2243A
THC2270
THC2484
THC2504
THC2509
THC2510
THC2511
THC2586
THC2604
THC2605
THC2696
THC2712
THC2714
THC2904
THC2904A
THC2905
THC2905A
THC2906
THC2906A
THC2907
THC2907A
THC2908
THC2923
THC2924
THC2925
THC2926
THC2944
THC2945
THC2946
THC3009
THC3013
THC3019
THC3020
THC3053
THC3072
THC3073
THC3107
THC3108
THC3109
THC3110
THC3114
THC3115
THC3116
THC3117
THC3120
THC3121
THC3133
THC3134
THC3135
THC3136
Ratings
(Page)
Sprague Package
Process (Page)
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-3
3-4
3-4
3-4
3-15
3-15
3-15
3-4
3-4
3-15
3-15
3-15
3-15
3-15
3-15
3-15
3-15
3-15
3-4
3-4
3-4
3-4
3-15
3-15
3-16
3-4
3-4
3-4
3-4
3-4
3-16
3-16
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-16
3-16
3-16
3-16
3-16
3-16
OCA
BBC
OCA
OAC
OAC
OAC
BAA
BAA
BAA
BAA
BAA
BAA
BXE
BCA
BOA
BBC
BBC
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
FBB
BBC
BBC
BBC
BBC
SHF
SHF
SHF
BJB
BJB
OSA
OSA
OAC
BOA
BOA
OAC
OAC
OAC
OAC
AJA
BBC
BBC
BAA
BOA
BOA
BOA
BOA
BOA
BOA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
Device
Type
THC3250
THC3251
THC3252
THC3253
THC3299
THC3300
THC3301
THC3302
THC3390
THC3391
THC3391A
THC3392
THC3393
THC3394
THC3395
THC3396
THC3397
THC3398
THC3402
THC3403
THC3404
THC3405
THC3414
THC3415
THC3416
THC3417
THC3444
THC3498
THC3499
THC3500
THC3501
THC3502
THC3503
THC3504
THC3505
THC3547
THC3548
THC3549
THC3550
THC3563
THC3564
THC3565
THC3566
THC3567
THC3568
THC3569
THC3634
THC3635
THC3638
THC3638A
THC3641
THC3642
THC3643
THC3644
Sprague
Type
THC3250
THC3251
THC3252
THC3253
THC3299
THC3300
THC3301
THC3302
THC3390
THC3391
THC3391A
THC3392
THC3393
THC3394
THC3395
THC3396
THC3397
THC3398
THC3402
THC3403
THC3404
THC3405
THC3414
THC3415
THC3416
THC3417
THC3444
THC3498
THC3499
THC3500
THC3501
THC3502
THC3503
THC3504
THC3505
THC3547
THC3548
THC3549
THC3550
THC3563
THC3564
THC3565
THC3566
THC3567
H:lC3568
THC3569
THC3634
THC3635
THC3638
THC3638A
THC3641
THC3642
THC3643
THC3644
Ratings
(Page)
Sprague Package
Process (Page)
3-16
3-16
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-4
3-5
3-5
3-5
3-5
3-5
3-5
3-5
3-5
3-5
3-16
3-16
3-16
3-16
3-16
3-16
3-16
3-16
3-5
3-5
3-5
3-5
3-5
3-5
3-5
3-16
3-16
3-16
3-16
3-5
3-5
3-5
3-16
BTB
BTB
BHB
BHB
DCA
DCA
DCA
DCA
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BHB
AJA
AJA
AJA
AJA
BOA
BOA
BOA
BOA
BXE
BXE
BXE
BXE
OMA
OMA
BAA
BBC
OAC
OAC
OAC
AKA
AKA
BOA
BOA
BBC
BBC
BBC
BOA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THC3646
THC3691
THC3692
THC3693
THC3694
THC3700
THC3701
THC3702
THC3703
THC3704
THC3705
THC3706
THC3707
THC3708
THC3709
THC3710
THC3711
THC3719
THC3720
THC3721
THC3724
THC3724A
THC3725
THC3725A
THC3742
THC3743
THC3793
THC3794
THC3798
THC3798A
THC3799
THC3799A
THC3825
THC3827
THC3858
THC3858A
THC3859
THC3859A
THC3860
THC3867
THC3868
THC3877
THC3877A
THC3900
THC3901
THC3903
THC3904
THC3905
THC3906
THC3923
THC3945
THC3946
THC3947
THC3962
2-27
Sprague
Type
THC3646
THC3691
THC3692
THC3693
THC3694
THC3700
THC3701
THC3702
THC3703
THC3704
THC3705
THC3706
THC3707
THC3708
THC3709
THC3710
THC3711
THC3719
THC3720
THC3721
THC3724
THC3724A
THC3725
THC3725A
THC3742
THC3743
THC3793
THC3794
THC3798
THC3798A
THC3799
THC3799A
THC3825
THC3827
THC3858
THC3858A
THC3859
THC3859A
THC3860
THC3867
THC3868
THC3877
THC3877A
THC3900
THC3901
THC3903
THC3904
THC3905
THC3906
THC3923
THC3945
THC3946
THC3947
THC3962
Ratings
(Page)
Sprague Package
Process (Page)
3-5
3-5
3-5
3-5
3-5
3-5
3-5
3-16
3-16
3-5
3-5
3-5
3-5
3-5
3-5
3-5
3-5
3-23
3-23
3-5
3-5
3-5
3-5
3-5
3-5
3-16
3-5
3-5
3-16
3-16
3-16
3-16
3-6
3-6
3-6
3-6
3-6
3-6
3-6
3-23
3-23
3-6
3-6
3-6
3-6
3-6
3-6
3-16
3-16
3-6
3-6
3-6
3-6
3-16
BJB
BAA
BAA
FFB
FFB
OAC
OSA
BOA
BOA
BBC
BBC
BBC
BAA
BAA
BAA
BAA
BAA
FAA
FAA
BBC
BHB
BHB
BHB
BHB
BLA
BMA
OAC
OAC
STL
STL
STL
STL
OMA
BAA
BAA
BAA
BAA
BAA
BAA
FAA
FAA
BAA
BAA
BAA
BAA
FFB
FFB
BTB
BTB
VXA
OAC
FFB
FFB
BXE
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMER~INDEX
Device
Type
THC3963
THC3964
THC3965
THC3974
THC3976
THC4013
THC4014
THC4030
THC4031
THC4032
THC4033
THC4036
THC4037
THC4047
THC4058
THC4059
THC4060
THC4061
THC4062
THC4121
THC4122
THC4123
THC4124
THC4125
THC4126
THC4140
THC4141
THC4142
THC4143
THC4248
THC4249
THC4250
THC4250A
THC4252
THC4286
THC4287
THC4288
THC4289
THC4290
THC4291
THC4292
THC4293
THC4314
THC4354
THC4355
THC4356
THC4384
THC4386
THC4400
THC4401
THC4402
THC4403
THC4409
THC4410
Sprague
Type
THC3963
THC3964
THC3965
THC3974
THC3976
THC4013
THC4014
THC4030
THC4031
THC4032
THC4033
THC4036
THC4037
THC4047
THC4058
THC4059
THC4060
THC4061
THC4062
THC4121
THC4122
THC4123
THC4124
THC4125
THC4126
THC4140
THC4141
THC4142
THC4143
THC4248
THC4249
THC4250
THC4250A
THC4252
THC4286
THC4287
THC4288
THC4289
THC4290
THC4291
THC4292
THC4293
THC4314
THC4354
THC4355
THC4356
THC4384
THC4386
THC4400
THC4401
THC4402
THC4403
THC4409
THC4410
Ratings
(Page)
Sprague Package
Process (Page)
3-16
3-16
3-16
3-6
3-6
3-6
3-6
3-16
3-16
3-16
3-16
3-16
3-17
3-6
3-17
3-17
3-17
3-17
3-17
3-17
3-17
3-6
3-6
3-17
3-17
3-6
3-6
3-17
3-17
3-17
3-17
3-17
3-17
3-6
3-6
3-6
3-17
3-17
3-17
3-17
3-6
3-6
3-17
3-17
3-17
3-17
3-6
3-6
3-6
3-6
3-17
3-17
3-6
3-6
BXE
BXE
BXE
BBC
BBC
BHB
BHB
DJC
DJC
DJC
DJC
DJC
DJC
BHB
BXE
BXE
BDA
BXE
BXE
BTB
BTB
BAA
BAA
BXE
BXE
DCA
DCA
BTB
BTB
BXE
BXE
BXE
BXE
DLA
BAA
BAA
BXE
BXE
BDA
BDA
DMA
DMA
DJC
DJC
DJC
DJC
BBC
BBC
DCA
DCA
DDA
DDA
BAA
BAA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THC4413
THC4415
THC4424
THC4916
THC4917
THC4924
THC4926
THC4927
THC4944
THC4945
THC4946
THC4951
THC4952
THC4953
THC4954
THC4964
THC4965
THC4966
THC4967
THC4968
THC4969
THC4970
THC4971
THC4972
THC5058
THC5059
THC5069
THC5086
THC5087
THC5088
THC5089
THC5127
THC5128
THC5129
THC5130
THC5131
THC5132
THC5133
THC5135
THC5136
THC5137
THC5138
THC5139
THC5142
THC5172
THC5174
THC5189
THC5190
THC5191
THC5192
THC5193
THC5194
THC5195
THC5209
2-28
Sprague
Type
THC4413
THC4415
THC4424
THC4916
THC4917
THC4924
THC4926
THC4927
THC4944
THC4945
THC4946
THC4951
THC4952
THC4953
THC4954
THC4964
THC4965
THC4966
THC4967
THC4968
THC4969
THC4970
THC4971
THC4972
THC5058
THC5059
THC5069
THC5086
THC5087
THC5088
THC5089
THC5127
THC5128
THC5129
THC5130
THC5131
THC5132
THC5133
THC5135
THC5136
THC5137
THC5138
THC5139
THC5142
THC5172
THC5174
THC5189
THC5190
THC5191
THC5192
THC5193
THC5194
THC5195
THC5209
Ratings
(Page)
Sprague Package
Process (Page)
3-17
3-17
3-6
3-17
3-17
3-6
3-6
3-6
3-6
3-7
3-7
3-7
3-7
3-7
3-7
3-17
3-17
3-7
3-7
3-7
3-7
3-7
3-17
3-17
3-7
3-7
3-15
3-17
3-17
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-17
3-17
3-17
3-7
3-7
3-7
3-15
3-15
3-15
3-23
3-23
3-23
3-7
BDA
BDA
BBC
BTB
BTB
AJA
DVA
DVA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
BXE
BXE
BAA
BAA
BAA
BBC
BBC
BDA
BDA
BLA
BLA
FBB
BXE
BXE
FEE
FEE
FFB
BBC
BBC
DMA
BAA
BAA
BAA
DAC
DAC
DAC
BXE
BTB
BDA
BBC
BAA
BHB
FCB
FCB
FCB
FDB
FDB
FDB
BAA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
Device
Type
THC5210
THC5219
THC5220
THC5221
THC5223
THC5225
THC5226
THC5227
THC5232
THC5232A
THC5249
THC5249A
THC5305
THC5306
THC5307
THC5308
THC5310
THC5333
THC5354
THC5355
THC5356
THC5365
THC5366
THC5367
THC5368
THC5369
THC5370
THC5371
THC5372
THC5373
THC5374
THC5375
THC5376
THC5377
THC5378
THC5379
THC5380
THC5381
THC5382
THC5383
THC5400
THC5401
THC5418
THC5419
THC5420 .
THC5447
THC5448
THC5449
THC5450
THC5451
THC5550
THC5551
THC5655
THC5656
Sprague
Type
THC5210
THC5219
THC5220
THC5221
THC5223
THC5225
THC5226
THC5227
THC5232
THC5232A
THC5249
THC5249A
THC5305
THC5306
THC5307
THC5308
THC5310
THC5333
THC5354
THC5355
THC5356
THC5365
THC5366
THC5367
THC5368
THC5369
THC5370
THC5371
THC5372
THC5373
THC5374
THC5375
THC5376
THC5377
THC5378
THC5379
THC5380
THC5381
THC5382
THC5383
THC5400
THC5401
THC5418
THC5419
THC5420
THC5447
THC5448
THC5449
THC5450
THC5451
THC5550
THC5551
THC5655
THC5656
Ratings
(Page)
Sprague Package
Process (Page)
3-7
3-7
3-7
3-17
3-7
3-7
3-17
3-17
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-7
3-8
3-23
3-18
3-18
3-18
3-18
3-18
3-18
3-8
3-8
3-8
3-8
3-18
3-18
3-18
3-18
3-8
3-8
3-18
3-18
3-8
3-8
3-18
3-18
3-18
3-18
3-8
3-8
3-8
3-18
3-18
3-8
3-8
3-8
3-8
3-8
3-8
3-8
BAA
FFB
BBC
BOA
FFB
BAA
BOA
BXE
BAA
BAA
BAA
BAA
TPM
TPM
TPM
TPM
BAA
FAA
BOA
BOA
BOA
BDA
BOA
BOA
OCA
OCA
OCA
OCA
BOA
BOA
BOA
BOA
BBC
BBC
BOA
BOA
FFB
FFB
BTB
BTB
BCA
BCA
BBC
BBC
BBC
BOA
BOA
BBC
BBC
BBC
VXA
VXA
OVA
OVA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THC5770
THC5772
THC5810
THC5811
THC5812
THC5813
THC5814
THC5815
THC5816
THC5817
THC5818
THC5819
THC5820
THC5821
THC5822
THC5823
THC5824
THC5825
THC5826
THC5827
THC5828
THC5830
THC5831
THC5832
THC5855
THC5856
THC5857
THC5858
THC5961
THC5962
THC5998
THC5999
THC6008
THC6009
THC6034
THC6035
THC6036
THC6037
THC6038
THC6039
THC6076
THC6222
THC6224
J"HC6303
THC6315
THC6316
THC6317
THC6318
THC6426
THC6427
THC6428
THC6429
THC6714
THD457
2-29
Sprague
Type
THC5770
THC5772
THC5810
THC5811
THC5812
THC5813
THC5814
THC5815
THC5816
THC5817
THC5818
THC5819
THC5820
THC5821
THC5822
THC5823
THC5824
THC5825
THC5826
THC5827
THC5828
THC5830
THC5831
THC5832
THC5855
THC5856
THC5857
THC5858
THC5961
THC5962
THC5998
THC5999
THC6008
THC6009
THC6034
THC6035
THC6036
THC6037
THC6038
THC6039
THC6076
THC6222
THC6224
THC6303
THC6315
THC6316
THC6317
THC6318
THC6426
THC6427
THC6428
THC6429
THC6714
TH0457
Ratings
(Page)
Sprague Package
Process (Page)
3-8
3-8
3-8
3-18
3-8
3-18
3-8
3-18
3-8
3-18
3-8
3-18
3-8
3-18
3-8
3-18
3-8
3-8
3-8
3-8
3-8
3-8
3-8
3-8
3-18
3-8
3-18
3-8
3-8
3-8
3-8
3-18
3-8
3-18
3-23
3-23
3-23
3-15
3-15
3-15
3-18
3-9
3-9
3-23
3-15
3-15
3-23
3-23
3-9
3-9
3-9
3-9
3-9
3-63
DMA
BJB
DAC
BFA
DAC
BFA
DAC
BFA
DAC
DFC
DAC
DFC
DAC
BFA
DAC
BFA
FFB
BAA
BAA
BAA
BAA
VAB
VAB
VAB
DJC
DSA
DJC
DSA
BAA
BAA
BBC
BOA
BBC
BOA
YJA
YJA
YJA
YFA
YFA
YFA
BOA
BAA
BAA
FAA
FBB
FBB
FDB
FDB
TPM
TPM
BAA
BAA
FBB
TRB
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
Device
Type
THD458A
THD459
THD459A
THD462
THD485
THD485B
THD550
THD645
THD914
THD914A
THD914B
THD914NG
THD3070
THD3595
THD3600
THD3600NG
THD4001
THD4002
THD4003
THD4004
THD4148
THD4149
THD4150
THD4151
THD4152
THD4153
THD4154
THD4447
THD4448
THD4610
THD5711
THD6916
THD6919
THD6924
THD9151
THD9152
THJ2608
THJ2609
THJ3329
THJ3330
THJ3331
THJ3332
THJ3369
THJ3370
THJ3458
THJ3459
THJ3460
THJ3819
THJ3820
THJ3821
THJ3822
THJ3823
THJ3824
THJ3954
Sprague
Type
THD458A
THD459
THD459A
THD462
THD485
THD485B
THD550
THD645
THD914
THD914A
THD914B
THD914NG
THD3070
THD3595
THD3600
THD3600NG
THD4001
THD4002
THD4003
THD4004
THD4148
THD4149
THD4150
THD4151
THD4152
THD4153
THD4154
THD4447
THD4448
THD4610
THD5711
THD6916
THD6919
THD6924
THD9751
THD9752
THJ2608
THJ2609
THJ3329
THJ3330
THJ3331
THJ3332
THJ3369
THJ3370
THJ3458
THJ3459
THJ3460
THJ3819
THJ3820
THJ3821
THJ3822
THJ3823
THJ3824
THJ3954
Ratings
(Page)
Sprague Package
Process (Page)
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-63
3-64
3-64
3-28
3-28
3-28
3-28
3-28
3-28
3-24
3-24
3-24
3-24
3-24
3-24
3-28
3-24
3-24
3-24
3-24
3-24
TRR
TRQ
TRQ
TRR
TRQ
TRQ
TRJ
TRJ
TSB
TSB
TSB
TRB
TSO
TRR
TSS
TRS
TRJ
TRJ
TRJ
TRL
TSB
TSB
TSS
TSB
TSB
TSB
TSB
TSB
TSB
TSU
BKA
BKA
BKF
BKD
AWA
AVA
PJ32
PJ32
PJ32
PJ32
PJ32
PJ32
NJ16
NJ16
NJ32
NJ16
NJ16
NJ32
PJ32
NJ16
NJ32
NJ32
NJ32
NJ35D
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7~26
7--26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THJ3955
THJ3956
THJ3957
THJ3966
THJ3967
THJ3967A
THJ3968
THJ3968A
THJ3969
THJ3969A
THJ3970
THJ3971
THJ3972
THJ3993
THJ3994
THJ4091
THJ4092
THJ4093
THJ4117
THJ4118
THJ4119
THJ4220
THJ4221
THJ4222
THJ4223
THJ4224
THJ4302
THJ4303
THJ4304
THJ4338
THJ4339
THJ4340
THJ4341
THJ4381
THJ4391
THJ4392
THJ4393
THJ4416
THJ4416A
THJ4856
THJ4856A
THJ4857
THJ4857A
THJ4858
THJ4858A
THJ4859
THJ4859A
THJ4860
THJ4860A
THJ4861
THJ4861A
THJ4867
THJ4868
THJ4869
2-30
Sprague
Type
THJ3955
THJ3956
THJ3957
THJ3966
THJ3967
THJ3967A
THJ3968
THJ3968A
THJ3969
THJ3969A
THJ3970
THJ3971
THJ3972
THJ3993
THJ3994
THJ4091
THJ4092
THJ4093
THJ4117
THJ4118
THJ4119
THJ4220
THJ4221
THJ4222
THJ4223
THJ4224
THJ4302
THJ4303
THJ4304
THJ4338
THJ4339
THJ4340
THJ4341
THJ4381
THJ4391
THJ4392
THJ4393
THJ4416
THJ4416A
THJ4856
THJ4856A
THJ4857
THJ4857A
THJ4858
THJ4858A
THJ4859
THJ4859A
THJ4860
THJ4860A
THJ4861
THJ4861A
THJ4867
THJ4868
THJ4869
Ratings
(Page)
Sprague Package
Process (Page)
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-28
3-28
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-24
3-28
3-24
3-24
3-24
3-24
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
NJ35D
NJ35D
NJ35D
NJ26
NJ26
NJ26
NJ26
NJ26
NJ16
NJ16
NJ132
NJ132
NJ132
PJ99
PJ99
NJ132
NJ132
NJ132
NJ01
NJ01
NJ01
NJ16
NJ32
NJ32
NJ32
NJ32
NJ26
NJ26
NJ26
NJ16
NJ16
NJ16
NJ16
PJ32
NJ132
NJ132
NJ132
NJ26
NJ26
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ16
NJ16
NJ16
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
1-26
7-26
7-26
7-26
7-26
1-26
1-26
7-26
7-26
1-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
""---~~--
Device
Type
THJ5018
THJ5019
THJ5020
THJ5021
THJ5033
THJ5045
THJ5046
THJ5047
THJ5078
THJ5103
THJ5104
THJ5105
THJ5114
THJ5115
THJ5116
THJ5163
THJ5196
THJ5197
THJ5198
THJ5199
THJ5245
THJ5246
THJ5247
THJ5248
THJ5358
THJ5359
THJ5360
THJ5361
THJ5362
THJ5363
THJ5364
THJ5397
THJ5398
THJ5432
THJ5433
THJ5434
THJ5457
THJ5458
THJ5459
THJ5460
THJ5461
THJ5462
THJ5484
THJ5485
THJ5486
THJ5545
THJ5546
THJ5547
THJ5555
THJ5556
THJ5557
THJ5558
THJ5638
THJ5639
Sprague
Type
THJ5018
THJ5019
THJ5020
THJ5021
THJ5033
THJ5045
THJ5046
THJ5047
THJ5078
THJ5103
THJ5104
THJ5105
THJ5114
THJ5115
THJ5116
THJ5163
THJ5196
THJ5197
THJ5198
THJ5199
THJ5245
THJ5246
THJ5247
THJ5248
THJ5358
THJ5359
THJ5360
THJ5361
THJ5362
THJ5363
THJ5364
THJ5397
THJ5398
THJ5432
THJ5433
THJ5434
THJ5457
THJ5458
THJ5459
THJ5460
THJ5461
THJ5462
THJ5484
THJ5485
THJ5486
THJ5545
THJ5546
THJ5547
THJ5555
THJ5556
THJ5557
THJ5558
THJ5638
THJ5639
Ratings
(Page)
Sprague Package
Process (Page)
3-28
3-28
3-28
3-28
3-28
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-28
3-28
3-28
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-25
3-26
3-28
3-28
3-28
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
PJ99
PJ99
PJ32
PJ32
PJ32
NJ35D
NJ35D
NJ35D
NJ26
NJ26
NJ26
NJ26
PJ99
PJ99
PJ99
NJ26
NJ35D
NJ35D
NJ35D
NJ35D
NJ26
NJ26
NJ26
NJ26
NJ26
NJ16
NJ16
NJ16
NJ32
NJ32
NJ32
NJ26L
NJ26L
NJ903
NJ903
NJ903
NJ32
NJ32
NJ32
PJ32
PJ32
PJ32
NJ26
NJ26
NJ26
NJ35D
NJ35D
NJ35D
NJ26
NJ16
NJ16
NJ16
NJ132
NJ99
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
---
---~---
Device
Type
THJ5640
THJ5653
THJ5654
THJ5668
THJ5669
THJ5670
THJ5911
THJ5912
THJ5949
THJ5950
THJ5951
THJ5952
THJ5953
THJ6449
THJ6450
THJ6451
THJ6452
THJ6453
THJ6454
THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJ8F244A
THJBF2448
THJ8F244C
THJBF246A
THJ8F2468
THJ8F246C
THJ8F256A
THJ8F2568
THJ8F256C
THJJ105
THJJ106
THJJ107
THJJ108
THJJ109
THJJ110
THJJ111
THJJ111A
THJJ112
THJJ112A
THJJ113
THJJ113A
THJJ174
THJJ175
THJJ176
THJJ177
THJJ201
THJJ202
THJJ203
THJJ210
THJJ211
THJJ212
2-31
------~---.--
Sprague
Type
THJ5640
THJ5653
THJ5654
THJ5668
THJ5669
THJ5670
THJ5911
THJ5912
THJ5949
THJ5950
THJ5951
THJ5952
THJ5953
THJ6449
THJ6450
THJ6451
THJ6452
THJ6453
THJ6454
THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJ8F244A
THJ8F2448
THJ8F244C
THJ8F246A
THJ8F2468
THJ8F246C
THJ8F256A
THJ8F2568
THJ8F256C
THJJ105
THJJ106
THJJ107
THJJ108
THJJ109
THJJ110
THJJ111
THJJ111 A
THJJ112
THJJ112A
THJJ113
THJJ113A
THJJ174
THJJ175
THJJ176
THJJ177
THJJ201
THJJ202
THJJ203
THJJ210
THJJ211
THJJ212
Ratings
(Page)
Sprague Package
Process (Page)
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-26
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-29
3-29
3-29
3-29
3-27
3-27
3-27
3-27
3-27
3-27
NJ99
NJ99
NJ99
NJ16
NJ32
NJ32
NJ28D
NJ28D
NJ32
NJ32
NJ32
NJ32
NJ32
NJ42
NJ42
NJ132L
NJ132L
NJ132L
NJ132L
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ132
NJ132
NJ132
NJ26
NJ26
NJ26
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ132
NJ132
NJ99
NJ99
NJ99
NJ99
PJ99
PJ99
PJ99
PJ99
NJ16
NJ16
NJ32
NJ26L
NJ26L
NJ26L
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
I
ALPHANUMERIC INDEX
Device
Type
THJJ230
THJJ231
THJJ232
THJJ270
THJJ271
THJJ300A
THJJ300B
THJJ300C
THJJ304
THJJ305
THJJ308
THJJ309
THJJ310
THJP1086
THJP1087
THJU290
THJU291
THJU304
THJU305
THJU306
THJU308
THJU309
THJU310
THJU1897
THJU1898
THJU1899
THJU401
THJU402
THJU403
THJU404
THJU405
THJU406
THYA01
THYA02
THYB01
THYB02
THYI01
THYI02
THZ1R8B05
THZ1R8B10
THZ2ROB05
THZ2ROB10
THZ2R2B05
THZ2R2B10
THZ2R4B05
THZ2R4B10
THZ2R7A05
THZ2R7A10
THZ2R7B05
THZ2R7B10
THZ2R8A05
THZ2R8A10
THZ3ROA05
THZ3ROA10
Sprague
Type
THJJ230
THJJ231
THJJ232
THJJ270
THJJ271
THJJ300A
THJJ300B
THJJ300C
THJJ304
THJJ305
THJJ308
THJJ309
THJJ310
THJP1086
THJP1087
THJU290
THJU291
THJU304
THJU305
THJU306
THJU308
THJU309
THJU310
THJU1897
THJU1898
THJU1899
THJU401
THJU402
THJU403
THJU404
THJU405
THJU406
THYA01
THYA02
THYB01
THYB02
THYI01
THYI02
THZ1R8B05
THZ1R8B10
THZ2ROB05
THZ2ROB10
THZ2R2B05
THZ2R2B10
THZ2R4B05
THZ2R4B10
THZ2R7A05
THZ2R7A10
THZ2R7B05
THZ2R7B10
THZ2R8A05
THZ2R8A10
THZ3ROA05
THZ3ROA10
Ratings
(Page)
Sprague Package
Process (Page)
3-27
3-27
3-27
3-29
3-29
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-27
3-29
3-29
3-27
3-27
3-29
3-29
3-29
3-27
3-27
3-27
3-28
3-28
3-28
3-27
3-27
3-27
3-28
3-28
3-28
3-64
3-64
3-64
3-64
3-64
3-64
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-67
3-65
3-65
3-67
3-67
3-65
3-65
3-65
3-65
NJ16
NJ16
NJ16
PJ99
PJ99
NJ26L
NJ26L
NJ26L
NJ26
NJ26
NJ99
NJ99
NJ99
PJ99
PJ99
NJ903
NJ903
PJ99
PJ99
PJ99
NJ99
NJ99
NJ99
NJ132
NJ132
NJ132
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
YAA
YAA
YBA
YBA
YIA
YIA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7:-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THZ3ROB05
THZ3ROB10
THZ3R3A05
THZ3R3A10
THZ3R3B05
THZ3R3B10
THZ3R6A05
THZ3R6A10
THZ3R6B05
THZ3R6B10
THZ3R9A05
THZ3R9A10
THZ3R9B05
THZ3R9B10
THZ4R3A05
THZ4R3A10
THZ4R3B05
THZ4R3B10
THZ4R7A05
THZ4R7A10
THZ4R7B05
THZ4R7B10
THZ5R1A05
THZ5R1A10
THZ5R1B05
THZ5R1B10
THZ5R6A05
THZ5R6A10
THZ5R6B05
THZ5R6B10
THZ5R6W05
THZ5R6W10
THZ6ROA05
THZ6ROA10
THZ6R2A05
THZ6R2A10
THZ6R2B05
THZ6R2B10
THZ6R2W05
THZ6R2W10
THZ6R8A05
THZ6R8A10
THZ6R8B05
THZ6R8B10
THZ6R8W05
THZ6R8W10
THZ7R5A05
THZ7R5A10
THZ7R5B05
THZ7R5B10
THZ7R5W05
THZ7R5W10
THZ8R2A05
THZ8R2A10
2-32
Sprague
Type
THZ3ROB05
THZ3ROB10
THZ3R3A05
THZ3R3A10
THZ3R3B05
THZ3R3B10
THZ3R6A05
THZ3R6A10
THZ3R6B05
THZ3R6B10
THZ3R9A05
THZ3R9A10
THZ3R9B05
THZ3R9B10
THZ4R3A05
THZ4R3A10
THZ4R3B05
THZ4R3B10
THZ4R7A05
THZ4R7A10
THZ4R7B05
THZ4R7B10
THZ5R1A05
THZ5R1A10
THZ5R1B05
THZ5R1B10
THZ5R6A05
THZ5R6A10
THZ5R6B05
THZ5R6B10
THZ5R6W05
THZ5R6W10
THZ6ROA05
THZ6ROA10
THZ6R2A05
THZ6R2A10
THZ6R2B05
THZ6R2B10
THZ6R2W05
THZ6R2W10
THZ6R8A05
THZ6R8A10
THZ6R8B05
THZ6R8B10
THZ6R8W05
THZ6R8W10
THZ7R5A05
THZ7R5A10
THZ7R5B05
THZ7R5B10
THZ7R5W05
THZ7R5W10
THZ8R2A05
THZ8R2A10
Ratings
(Page)
Sprague Package
Process (Page)
3-67
3-67
3-65
3-65
3-67
3-67
3-65
3-65
3-67
3-67
3-65
3-65
3-67
3-67
3-65
3-65
3-67
3-67
3-65
3-65
3-67
3-67
3-65
3-65
3-67
3-67
3-65
3-65
3-67
3-67.
3-69
3-69
3-65
3-65
3-65
3-65
3-67
3-67
3-69
3-69
3-65
3-65
3-67
3-67
3-69
3-69
3-65
3-65
3-67
3-67
3-69
3-69
3-65
3-65
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZAA
ZCA
ZCA
ZCA
ZCA
ZCD
ZCD
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCD
ZCD
ZCA
ZCA
ZCA
ZCA
ZCD
ZCD
ZCA
ZCA
ZCA
ZCA
ZCD
ZCD
ZCA
ZCA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
Device
Type
THZ8R2B05
THZ8R2B10
THZ8R2W05
THZ8R2W10
THZ8R7A05
THZ8R7A10
THZ8R7B05
THZ8R7B10
THZ9R1A05
THZ9R1A10
THZ9R1B05
THZ9R1B10
THZ9R1W05
THZ9R1W10
THZ010A05
THZ010A10
THZ010B05
THZ010B10
THZ010W05
THZ010W10
THZ011A05
THZ011A10
THZ011B05
THZ011B10
THZ011W05
THZ011W10
THZ012A05
THZ012A10
THZ012B05
THZ012B10
THZ012W05
THZ012W10
THZ013A05
THZ013A10
THZ013B05
THZ013B10
THZ013W05
THZ013W10
THZ014A05
THZ014A10
THZ014B05
THZ014B10
THZ015A05
THZ015A10
THZ015B05
THZ015B10
THZ015W05
THZ015W10
THZ016A05
THZ016A10
THZ016B05
THZ016B10
THZ016W05
THZ016W10
Sprague
Type
THZ8R2B05
THZ8R2B10
THZ8R2W05
THZ8R2W10
THZ8R7A05
THZ8R7A10
THZ8R7B05
THZ8R7B10
THZ9R1A05
THZ9R1A10
THZ9R1B05
THZ9R1B10
THZ9R1W05
THZ9R1W10
THZ010A05
THZ010A10
THZ010B05
THZ010B10
THZ010W05
THZ010W10
THZ011A05
THZ011A10
THZ011B05
THZ011B10
THZ011W05
THZ011W10
THZ012A05
THZ012A10
THZ012B05
THZ012B10
THZ012W05
THZ012W10
THZ013A05
THZ013A10
THZ013B05
THZ013B10
THZ013W05
THZ013W10
THZ014A05
THZ014A10
THZ014B05
THZ014B10
THZ015A05
THZ015A10
THZ015B05
THZ015B10
THZ015W05
THZ015W10
THZ016A05
THZ016A10
THZ016B05
THZ016B10
THZ016W05
THZ016W10
Ratings
(Page)
3-67
3-67
3-69
3-69
3-65
3-65
3-67
3-67
3-65
3-65
3-67
3-67
3-69
3-69
3-65
3-65
3-67
3-67
3-69
3-69
3-65
3-65
3-67
3-67
3-69
3-69
3-65
3-65
3-67
3-67
3-69
3-69
3-65
3-65
3-67
3-68
3-69
3-69
3-65
3-65
3-68
3-68
3-65
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
Sprague Package
Process (Page)
ZeA
ZeA
ZeD
zeD
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
ZeA
zeD
zeD
ZeA
ZeA
ZeA
ZeA
zeD
zeD
ZeA
ZeA
ZeA
ZeA
zeD
zeD
ZeA
ZeA
ZeA
ZeA
zeD
zeD
ZKA
ZKA
ZKA
ZKA
ZKD
ZKD
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKD
ZKD
ZKA
ZKA
ZKA
ZKA
ZKD
ZKD
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THZ017A05
THZ017A10
THZ017B05
THZ017B10
THZ018A05
THZ018A10
THZ018B05
THZ018B10
THZ018W05
THZ018W10
THZ019A05
THZ019A10
THZ019B05
THZ019B10
THZ020A05
THZ020A10
THZ020B05
THZ020B10
THZ020W05
THZ020W10
THZ022A05
THZ022A10
THZ022B05
THZ022B10
THZ022W05
THZ022W10
THZ024A05
THZ024A10
THZ024B05
THZ024B10
THZ024W05
THZ024W10
THZ025A05
THZ025A10
THZ025B05
THZ025B10
THZ027A05
THZ027A10
THZ027B05
THZ027B10
THZ027W05
THZ027W10
THZ028A05
THZ028A10
THZ028B05
THZ028B10
THZ030A05
THZ030A10
THZ030B05
THZ030B10
THZ030W05
THZ030W10
THZ033A05
THZ033A10
2-33
Sprague
Type
THZ017A05
THZ017A10
THZ017B05
THZ017B10
THZ018A05
THZ018A10
THZ018B05
THZ018B10
THZ018W05
THZ018W10
THZ019A05
THZ019A10
THZ019B05
THZ019B10
THZ020A05
THZ020A10
THZ020B05
THZ020B10
THZ020W05
THZ020W10
THZ022A05
THZ022A10
THZ022B05
THZ022B10
THZ022W05
THZ022W10
THZ024A05
THZ024A10
THZ024B05
THZ024B10
THZ024W05
THZ024W10
THZ025A05
THZ025A10
THZ025B05
THZ025B10
THZ027A05
THZ027A10
THZ027B05
THZ027B10
THZ027W05
THZ027W10
THZ028A05
THZ028A10
THZ028B05
THZ028B10
THZ030A05
THZ030A10
THZ030B05
THZ030B10
THZ030W05
THZ030W10
THZ033A05
THZ033A10
Ratings
(Page)
3-66
3-66
3-68
3-68
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
Sprague Package
Process (Page)
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKD
ZKD
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKD
ZKD
ZKA
ZKA
ZKA
ZKA
ZKD
ZKD
ZKA
ZKA
ZKA
ZKA
ZKD
ZKD
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZED
ZED
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZED
ZED
ZEA
ZEA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
ALPHANUMERIC INDEX
Device
Type
THZ033B05
THZ033B10
THZ033W05
THZ033W10
THZ036A05
THZ036AJQ
THZ036B05
THZ036B10
THZ036W05
THZ036W10
THZ039A05
THZ039A10
THZ039B05
THZ039B10
THZ039W05
THZ039W10
THZ043A05
THZ043A10
THZ043B05
THZ043B10
THZ043W05
THZ043W10
THZ047A05
THZ047A10
THZ047B05
THZ047B10
THZ047W05
THZ047W10
THZ051A05
THZ051A10
THZ051B05
THZ051B10
THZ051W05
THZ051W10
THZ056A05
THZ056A10
THZ056B05
THZ056B10
THZ060A05
THZ060A10
THZ060B05
THZ060B10
THZ821
THZ821A
THZ823
THZ823A
THZ825
THZ825A
THZ827
THZ827A
THZ4565
THZ4565A
THZ4566
THZ4566A
Sprague
Type
THZ033B05
THZ033B10
THZ033W05
THZ033W10
THZ036A05
THZ036A10
THZ036B05
THZ036B10
THZ036W05
THZ036W10
THZ039A05
THZ039A10
THZ039B05
THZ039B10
THZ039W05
THZ039W10
THZ043A05
THZ043A10
THZ043B05
THZ043B10
THZ043W05
THZ043W10
THZ047A05
THZ047A10
THZ047B05
THZ047B10
THZ047W05
THZ047W10
THZ051A05
THZ051A10
THZ051B05
THZ051B10
THZ051W05
THZ051W10
THZ056A05
THZ056A10
THZ056B05
THZ056B10
THZ060A05
THZ060A10
THZ060B05
THZ060B10
THZ821
THZ821A
THZ823
THZ823A
THZ825
THZ825A
THZ827
THZ827A
THZ4565
THZ4565A
THZ4566
THZ4566A
Ratings
(Page)
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-69
3-69
3-66
3-66
3-68
3-68
3-66
3-66
3-68
3-68
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
Sprague Package
Process (Page)
ZEA
ZEA
ZED
ZED
ZEA
ZEA
ZEA
ZEA
ZED
ZED
ZEA
ZEA
ZEA
ZEA
ZED
ZED
ZEA
ZEA
ZEA
ZEA
ZED
ZED
ZEA
ZEA
ZEA
ZEA
ZED
ZED
ZEA
ZEA
ZEA
ZEA
ZED
ZED
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZEA
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHR
ZHR
ZHR
ZHR
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
Device
Type
THZ4567
THZ4567A
THZ4568
THZ4568A
THZ4570
THZ4570A
THZ4571
THZ4571A
THZ4572
THZ4572A
THZ4573
THZ4573A
THZ4575
THZ4575A
THZ4576
THZ4576A
THZ4577
THZ4577A
THZ4578
THZ4578A
TMPA811C5
TMPA811C6
TMPA811C7
TMPA811C8
TMPA812M3
TMPA812M4
TMPA812M5
TMPA812M6
TMPA812M7
TMPA813S2
TMPA813S3
TMPA813S4
TMPA956H3
TMPA956H4
TMPA956H5
TMPC1009F1
TMPC1009F2
TMPC1009F3
TMPC1009F4
TMPC1009F5
TMPC1622D6
TMPC1622D7
TMPC1622D8
TMPC1623L3
TMPC1623L4
TMPC1623L5
TMPC1623L6
TMPC1623L7
TMPC1653N2
TMPC1653N3
TMPC1653N4
TMPC1654N5
TMPC1654N6
TMPC1654N7
2-34
Sprague
Type
Ratings
(Page)
THZ4567
THZ4567A
THZ4568
THZ4568A
THZ4570
THZ4570A
THZ4571
THZ4571A
THZ4572
THZ4572A
THZ4573
THZ4573A
THZ4575
THZ4575A
THZ4576
THZ4576A
THZ4577
THZ4577A
THZ4578
THZ4578A
TMPA811C5
TMPA811C6
TMPA811C7
TMPA811C8
TMPA812M3
TMPA812M4
TMPA812M5
TMPA812M6
TMPA812M7
TMPA813S2
TMPA813S3
TMPA813S4
TMPA956H3
TMPA956H4
TMPA956H5
TMPC1009F1
TMPC1009F2
TMPC1009F3
TMPC1009F4
TMPC1009F5
TMPC1622D6
TMPC1622D7
TMPC1622D8
TMPC1623L3
TMPC1623L4
TMPC1623L5
TMPC1623L6
TMPC1623L7
TMPC1653N2
TMPC1653N3
TMPC1653N4
TMPC1654N5
TMPC1654N6
TMPC1654N7
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-70
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-52
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
3-50
Sprague Package
Process (Page)
ZHR
ZHR
ZHR
ZHR
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
JFA
JFA
JFA
JFA
BXE
BXE
BXE
BXE
BXE
JFA
JFA
JFA
BTB
BTB
BTB
DMA
DMA
DMA
DMA
DMA
FEE
FEE
FEE
FEE
FEE
FEE
FEE
FEE
VXA
VXA
VXA
VXA
VXA
VXA
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-26
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
ALPHANUMERIC INDEX
-----------
Device
Type
Sprague
Type
Ratings
(Page)
Sprague Package
Process (Page)
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-72
3-57
3-57
3-57
3-57
3-57
3-57
3-54
3-54
3-54
3-54
3-54
3-54
3-57
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-54
3-57
3-57
3-54
3-54
3-54
3-54
3-54
3-54
7-18
TRO
7-18
TSB
7-21
DOB
7-21
DOB
DBA
7-19
DBA
7-19
TSB
7-18
7-18
TSS
7-18
TSB
TSB
7-18
TSB
7-18
TSS
7-18
BKA
7-18
TSB
7-18
DBA
7-19
BKA
7-18
7-18
BKF
BKD
7-18
TSB
7-20
PJ32
7-17
PJ32
7-17
PJ32
7-17
7-17
PJ32
7-17
PJ32
PJ32
7-17
NJ16
7-17
7-17
NJ16
7-17
NJ132
NJ16
7-17
NJ16
7-17
7-17
NJ32
PJ32
7-17
NJ32
7-17
NJ32
7-17
7-17
NJ32
7-17
NJ32
NJ26
7-17
7-17
NJ26
7-17
NJ26
NJ26
7-17
NJ26
7-17
NJ16
7-17
NJ16
7-17
NJ132
7-17
7-17
NJ132
NJ132
7-17
7-17
PJ99
7-17
PJ99
NJ132
7-17
NJ132
7-17
7-17
NJ132
7-17
NJ01
7-17
NJ01
7-17
NJ01 _ _ _ _
__
Device
Type
Sprague
Type
Ratings
(Page)
Sprague Package
Process (Page)
------
TMPD459
TMPD914
TMPD2835
TMPD2836
TMPD2837
TMPD2838
TMPD4148
TMPD4150
TMPD4153
TMPD4154
TMPD4447
TMPD4448
TMPD5711
TMPD6050
TMPD6100
TMPD6916
TMPD6919
TMPD6924
TMPD7000
TMPF2608
TMPF2609
TMPF3329
TMPF3330
TMPF3331
TMPF3332
TMPF3369
TMPF3370
TMPF3458
TMPF3459
TMPF3460
TMPF3819
TMPF3820
TMPF3821
TMPF3822
TMPF3823
TMPF3824
TMPF3966
TMPF3967
TMPF3967A
TMPF3968
TMPF3968A
TMPF3969
TMPF3969A
TMPF3970
TMPF3971
TMPF3972
TMPF3993
TMPF3994
TMPF4091
TMPF4092
TMPF4093
TMPF4117
TMPF4118
TMPF4119
TMPD459
TMPD914
TMPD2835
TMPD2836
TMPD2837
TMPD2838
TMPD4148
TMPD4150
TMPD4153
TMPD4154
TMPD4447
TMPD4448
TMPD5711
TMPD6050
TMPD6100
TMPD6916
TMPD6919
TMPD6924
TMPD7000
TMPF2608
TMPF2609
TMPF3329
TMPF3330
TMPF3331
TMPF3332
TMPF3369
TMPF3370
TMPF3458
TMPF3459
TMPF3460
TMPF3819
TMPF3820
TMPF3821
TMPF3822
TMPF3823
TMPF3824
TMPF3966
TMPF3967
TMPF3967A
TMPF3968
TMPF3968A
TMPF3969
TMPF3969A
TMPF3970
TMPF3971
TMPF3972
TMPF3993
TMPF3994
TMPF4091
TMPF4092
TMPF4093
TMPF4117
TMPF4118
TMPF4119
_"~
~
I
I
~~l.......-
7-17
TMPF4220
TMPF4220
3-54
NJ16
7-17
TMPF4221
TMPF4221
3-54
NJ32
TMPF4222
TMPF4222
7-17
3-54
NJ32
TMPF4223
3-54
7-17
TMPF4223
NJ32
TMPF4224
7-17
TMPF4224
3-54
NJ32
TMPF4302
TMPF4302
3-54
7-17
NJ26
TMPF4303
TMPF4303
3-54
7-17
NJ26
TMPF4304
TMPF4304
3-54
7-17
NJ26
TMPF4338
TMPF4338
3-54
7-17
NJ16
TMPF4339
TMPF4339
3-54
7-17
NJ16
TMPF4340
7-17
TMPF4340
3-54
NJ16
7-17
TMPF4341
TMPF4341
3-54
NJ16
3-57
TMPF4381
7-17
TMPF4381
PJ32
7-17
TMPF4391
TMPF4391
3-54
NJ132
TMPF4392
TMPF4392
3-54
7-17
NJ132
TMPF4393
3-54
7-17
TMPF4393
NJ132
TMPF4416
TMPF4416
3-54
7-17
NJ26
TMPF4416A
TMPF4416A
3-54
7-17
NJ26
TMPF4856
TMPF4856
3-54
7-17
NJ132
TMPF4856A
TMPF4856A
3-54
7-17
NJ132
TMPF4857
TMPF4857
3-54
7-17
NJ132
TMPF4857A
TMPF4857A
3-54
7-17
NJ132
7-17
TMPF4858
TMPF4858
3-54
NJ132
7-17
TMPF4858A
TMPF4858A
3-55
NJ132
TMPF4859
TMPF4859
3-55
7-17
NJ132
TMPF4859A
TMPF4859A
3-55
7-17
NJ132
7-17
TMPF4860
TMPF4860
3-55
NJ132
TMPF4860A
7-17
TMPF4860A
3-55
NJ132
TMPF4861
TMPF4861
7-17
3-55
NJ132
TMPF4861A
TMPF4861A
7-17
3-55
NJ132
TMPF4867
3-55
7-17
TMPF4867
NJ16
TMPF4868
TMPF4868
3-55
7-17
NJ16
TMPF4869
TMPF4869
7-17
3-55
NJ16
TMPF5018
TMPF5018
3-57
7-17
PJ99
TMPF5019
TMPF5019
3-57
7-17
PJ99
7-17
TMPF5020
TMPF5020
3-57
PJ32
TMPF5021
TMPF5021
3-57
7-17
PJ32
TMPF5033
TMPF5033
3-57
PJ32
7-17
7-17
TMPF5078
TMPF5078
3-55
NJ26
TMPF5103
TMPF5103
7-17
3-55
NJ26
TMPF5104
3-55
7-17
TMPF5104
NJ26
TMPF5105
7-17
TMPF5105
355
NJ26
TMPF5114
TMPF5114
3-57
7-17
PJ99
7-17
TMPF5115
TMPF5115
3-57
PJ99
7-17
TMPF5116
TMPF5116
3-57
PJ99
TMPF5163
TMPF5163
3-55
7-17
NJ26
7-17
TMPF5245
TMPF5245
3-55
NJ26
7-17
TMPF5246
TMPF5246
3-55
NJ26
TMPF5247
TMPF5247
3-55
7-17
NJ26
TMPF5248
TMPF5248
3-55
7-17
NJ26
7-17
TMPF5358
TMPF5358
3-55
NJ16
7-17
TMPF5359
TMPF5359
3-55
NJ16
7-17
TMPF5360
TMPF5360
3-55
NJ16
TMPF5361
TMPF5361 _______
3-55
NJ16
7-17
___________
._ _ _ _ _ _ _ _ _ _ _
2-35
~.~
I
I
I
I
'i
11
ALPHANUMERIC INDEX
Device
Type
Sprague
Type
Ratings
(Page)
TMPF5362
TMPF5363
TMPF5364
TMPF5397
TMPF5398
TMPF5457
TMPF5458
TMPF5459
TMPF5460
TMPF5461
TMPF5462
TMPF5484
TMPF5485
TMPF5486
TMPF5555
TMPF5556
TMPF5557
TMPF5558
TMPF5638
TMPF5639
TMPF5640
TMPF5653
TMPF5654
TMPF5668
TMPF5669
TMPF5670
TMPF5949
TMPF5950
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
TMPFBC264C
TMPFBC264D
TMPFBF244A
TMPFBF244B
TMPFBF244C
TMPFBF246A
TMPFBF246B
TMPFBF246C
TMPFBF256A
TMPFBF256B
TMPFBF256C
TMPFJ111
TMPFJ111A
TMPFJ112
TMPFJ112A
TMPFJ113
TMPFJ113A
TMPF5362
TMPF5363
TMPF5364
TMPF5397
TMPF5398
TMPF5457
TMPF5458
TMPF5459
TMPF5460
TMPF5461
TMPF5462
TMPF5484
TMPF5485
TMPF5486
TMPF5555
TMPF5556
TMPF5557
TMPF5558
TMPF5638
TMPF5639
TMPF5640
TMPF5653
TMPF5654
TMPF5668
TMPF5669
TMPF5670
TMPF5949
TMPF5950
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
TMPFBC264C
TMPFBC264D
TMPFBF244A
TMPFBF244B
TMPFBF244C
TMPFBF246A
TMPFBF246B
TMPFBF246C
TMPFBF256A
TMPFBF256B
TMPFBF256C
TMPFJ111
TMPFJ111A
TMPFJ112
TMPFJ112A
TMPFJ113
TMPFJ113A
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-57
3-57
3-57
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-55
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
Sprague Package
Process (Page)
NJ32
NJ32
NJ32
NJ26L
NJ26L
NJ32
NJ32
NJ32
PJ32
PJ32
PJ32
NJ26
NJ26
NJ26
NJ26
NJ16
NJ16
NJ16
NJ132
NJ99
NJ99
NJ99
NJ99
NJ16
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ32
NJ132L
NJ132L
NJ132L
NJ132L
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ99
NJ132
NJ132
NJ26
NJ26
NJ26
NJ132
NJ132
NJ99
NJ99
NJ99
NJ99
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
Device
Type
TMPFJ114
TMPFJ174
TMPFJ175
TMPFJ176
TMPFJ177
TMPFJ201
TMPFJ202
TMPFJ203
TMPFJ210
TMPFJ211
TMPFJ212
TMPFJ230
TMPFJ231
TMPFJ232
TMPFJ270
TMPFJ271
TMPFJ300A
TMPFJ300B
TMPFJ300C
TMPFJ304
TMPFJ305
TMPFJ308
TMPFJ309
TMPFJ310
TMPFP1086
TMPFP1087
TMPFU1897
TMPFU1898
TMPFU1899
TMPFU304
TMPFU305
TMPFU306
TMPFU308
TMPFU309
TMPFU310
TMPT404
TMPT404A
TMPT918
TMPT2221
TMPT2221A
TMPT2222
TMPT2222A
TMPT2484
TMPT2906
TMPT2906A
TMPT2907
TMPT2907A
TMPT3638
TMPT3638A
TMPT3798
TMPT3798A
TMPT3903
TMPT3904
TMPT3905
2-36
Sprague
Type
TMPFJ114
TMPFJ174
TMPFJ175
TMPFJ176
TMPFJ177
TMPFJ201
TMPFJ202
TMPFJ203
TMPFJ210
TMPFJ211
TMPFJ212
TMPFJ230
TMPFJ231
TMPFJ232
TMPFJ270
TMPFJ271
TMPFJ300A
TMPFJ300B
TMPFJ300C
TMPFJ304
TMPFJ305
TMPFJ308
TMPFJ309
TMPFJ310
TMPFP1086
TMPFP1087
TMPFU1897
TMPFU1898
TMPFU1899
TMPFU304
TMPFU305
TMPFU306
TMPFU308
TMPFU309
TMPFU310
TMPT404
TMPT404A
TMPT918
TMPT2221
TMPT2221A
TMPT2222
TMPT2222A
TMPT2484
TMPT2906
TMPT2906A
TMPT2907
TMPT2907A
TMPT3638
TMPT3638A
TMPT3798
TMPT3798A
TMPT3903
TMPT3904
TMPT3905
Ratings
(Page)
3-57
3-57
3-57
3-57
3-57
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-57
3-57
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-56
3-57
3-57
3-56
3-56
3-56
3-57
3-57
3-57
3-56
3-56
3-56
3-52
3-52
3-50
3-50
3-51
3-51
3-51
3-51
3-52
3-52
3-52
3-52
3-53
3-53
3-53
3-53
3-51
3-51
3-53
Sprague Package
Process (Page)
NJ99
PJ99
PJ99
PJ99
PJ99
NJ16
NJ16
NJ32
NJ26L
NJ26L
NJ26L
NJ16
NJ16
NJ16
PJ99
PJ99
NJ26L
NJ26L
NJ26L
NJ26
NJ26
NJ99
NJ99
NJ99
PJ99
PJ99
NJ132
NJ132
NJ132
PJ99
PJ99
PJ99
NJ99
NJ99
NJ99
SHF
SHF
DMA
JGA
DCA
JGA
DCA
FEE
DDA
DDA
DDA
DDA
DDA
DDA
BXE
BXE
FFB
FFB
BTB
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-17
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
ALPHANUMERIC INDEX
Device
Type
TMPT3906
TMPT4124
TMPT4125
TMPT4126
TMPT4401
TMPT4402
TMPT4403
TMPT50B6
TMPT50B7
TMPT5088
TMPT5089
TMPT5401
TMPT5550
TMPT5551
TMPT6427
TMPT6428
TMPT6429
TMPTA05
TMPTA06
TMPTA12
TMPTA13
TMPTA14
TMPTA20
TMPTA42
TMPTA43
TMPTA55
TMPTA56
TMPTA63
TMPTA64
TMPTA70
TMPTA92
TMPTA93
TMPTH81
TMPZ821
TMPZ821A
TMPZ823
TMPZ823A
TMPZ825
TMPZ825A
TMPZ827
TMPZ827A
TMPZ4565
TMPZ4565A
TMPZ4566
TMPZ4566A
TMPZ4567
TMPZ4567A
TMPZ4568
TMPZ4568A
TMPZ4570
TMPZ4570A
TMPZ4571
TMPZ4571A
TMPZ4572
Sprague
Type
TMPT3906
TMPT4124
TMPT4125
TMPT4126
TMPT4401
TMPT4402
TMPT4403
TMPT50B6
TMPT5087
TMPT5088
TMPT5089
TMPT5401
TMPT5550
TMPT5551
TMPT6427
TMPT6428
TMPT6429
TMPTA05
TMPTA06
TMPTA12
TMPTA13
TMPTA14
TMPTA20
TMPTA42
TMPTA43
TMPTA55
TMPTA56
TMPTA63
TMPTA64
TMPTA70
TMPTA92
TMPTA93
TMPTH81
TMPZ821
TMPZ821A
TMPZ823
TMPZ823A
TMPZ825
TMPZ825A
TMPZ827
TMPZ827A
TMPZ4565
TMPZ4565A
TMPZ4566
TMPZ4566A
TMPZ4567
TMPZ4567A
TMPZ4568
TMPZ4568A
TMPZ4570
TMPZ4570A
TMPZ4571
TMPZ4571A
TMPZ4572
Ratings
(Page)
Sprague Package
Process (Page)
3-53
3-51
3-53
3-53
3-51
3-53
3-53
3-53
3-53
3-51
3-51
3-53
3-51
3-51
3-51
3-51
3-51
3-51
3-51
3-51
3-51
3-51
3-51
3-51
3-51
3-53
3-53
3-53
3-53
3-53
3-53
3-53
3-53
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
BTB
FEE
BXE
BXE
DCA
DDA
DDA
BXE
BXE
FEE
FEE
BCA
VXA
VXA
TPM
FEE
FEE
JLA
JLA
TPM
TPM
TPM
VRB
BLA
BLA
JMA
JMA
SRB
SRB
BXE
BMA
BMA
JYA
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHO
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHR
ZHO
ZHO
ZHO
ZHO
ZHO
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-16
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
Device
Type
TMPZ4572A
TMPZ4573
TMPZ4573A
TMPZ4575
TMPZ4575A
TMPZ4576
TMPZ4576A
TMPZ4577
TMPZ4577A
TMPZ4578
TMPZ4578A
TMPZ5229
TMPZ5230
TMPZ5231
TMPZ5232
TMPZ5233
TMPZ5234
TMPZ5235
TMPZ5236
TMPZ5237
TMPZ5238
TMPZ5239
TMPZ5240
TMPZ5241
TMPZ5242
TMPZ5243
TMPZ5244
TMPZ5245
TMPZ5246
TMPZ5247
TMPZ5248
TMPZ5249
TMPZ5250
TMPZ5251
TMPZ5252
TMPZ5253
TMPZ5254
TMPZ5255
TMPZ5256
TMPZ5257
TND903
TND905
TND907
TND908
TND918
TND921
TND933
TND93B
TND939
TND940
TND942
TP918
TP930
TP2218
2-37
Sprague
Type
TMPZ4572A
TMPZ4573
TMPZ4573A
TMPZ4575
TMPZ4575A
TMPZ4576
TMPZ4576A
TMPZ4577
TMPZ4577A
TMPZ4578
TMPZ4578A
TMPZ5229
TMPZ5230
TMPZ5231
TMPZ5232
TMPZ5233
TMPZ5234
TMPZ5235
TMPZ5236
TMPZ5237
TMPZ5238
TMPZ5239
TMPZ5240
TMPZ5241
TMPZ5242
TMPZ5243
TMPZ5244
TMPZ5245
TMPZ5246
TMPZ5247
TMPZ5248
TMPZ5249
TMPZ5250
TMPZ5251
TMPZ5252
TMPZ5253
TMPZ5254
TMPZ5255
TMPZ5256
TMPZ5257
TND903
TND905
TND907
TND908
TND918
TND921
TND933
TND938
TND939
TND940
TND942
TP918
TP930
TP2218
Ratings
(Page)
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-74
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
3-73
5-3
5-3
5-3
5-3
5-3
5-3
5-3
5-3
5-3
5-3
5-3
3-30
3-30
3-30
Sprague Package
Process (Page)
ZHO
ZHO
ZHO
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZHP
ZAA
ZAA
ZAA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZCA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZKA
ZEA
ZEA
ZEA
ZEA
ZEA
TSS
TSB
TRO
TSS
TSS
TSS
TSS
TTU
TTU
TSS
TTU
DMA
FEE
JGA
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-22
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-1B
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-18
7-25
7-25
7-25
7-25
7-25
7-25
7-24
7-24
7-24
7-24
7-25
7-8
7-8
7-8
ALPHANUMERIC INDEX
Device
Type
TP221SA
TP2219
TP2219A
TP2221
TP2221A
TP2222
TP2222A
TP24S4
TP260S
TP2609
TP2904
TP2904A
TP2905
TP2905A
TP2906
TP2906A
TP2907
TP2907A
TP2944
TP2945
TP2946
TP3250
TP3251
TP3252
TP3253
TP3299
TP3300
TP3301
TP3302
TP3329
TP3330
TP3331
TP3332
TP3369
TP3370
TP3444
TP345S
TP3459
TP3460
TP3564
TP3565
TP3566
TP3567
TP3568
TP3569
TP3638
TP3638A
TP3641
TP3642
TP3643
TP3644
TP3691
TP3692
TP3693
Sprague
Type
TP221SA
TP2219
TP2219A
TP2221
TP2221A
TP2222
TP2222A
TP24S4
TP260S
TP2609
TP2904
TP2904A
TP2905
TP2905A
TP2906
TP2906A
TP2907
TP2907A
TP2944
TP2945
TP2946
TP3250
TP3251
TP3252
TP3253
TP3299
TP3300
TP3301
TP3302
TP3329
TP3330
TP3331
TP3332
TP3369
TP3370
TP3444
TP345S
TP3459
TP3460
TP3564
TP3565
TP3566
TP3567
TP3568
TP3569
TP363S
TP363SA
TP3641
TP3642
TP3643
TP3644
TP3691
TP3692
TP3693
Ratings
(Page)
Sprague Package
Process (Page)
3-30
3-30
3-30
3-30
3-30
3-30
3-30
3-30
3-4S
3-4S
3-39
3-39
3-39
3-39
3-39
3-39
3-39
3-39
3-39
3-39
3-39
3-39
3-39
3-30
3-30
3-30
3-30
3-30
3-30
3-48
3-48
3-4S
3-48
3-45
3-45
3-31
3-45
3-45
3-45
3-31
3-31
3-31
3-31
3-31
3-31
3-39
3-39
3-31
3-31
3-31
3-40
3-31
3-31
3-31
DCA
JGA
DCA
JGA
DCA
JGA
DCA
FEE
PJ32
PJ32
DAA
DAA
DAA
DAA
DAA
DAA
DAA
DAA
SHF
SHF
SHF
BTB
BTB
BHB
BHB
DCA
DCA
DCA
DCA
PJ32
PJ32
PJ32
PJ32
NJ16
NJ16
BHB
NJ32
NJ32
NJ32
DMA
FEE
JGA
JLA
JLA
JLA
JFA
JFA
JGA
JGA
JGA
JFA
FEE
FEE
FFB
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-11
7-11
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-8
7-S
7-S
7-S
7-11
7-11
7-11
7-11
7-11
7-11
7-S
7-11
7-11
7-11
7-8
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-8
7-S
7-S
7-S
7-8
Device
Type
I
TP3694
TP3700
TP3701
TP3724
TP3724A
TP379S
TP379SA
TP3799
TP3799A
TP3S21
TP3S22
TP3S23
TP3S24
TP3966
TP3967
TP3967A
TP396S
TP396SA
TP3969
TP3969A
TP3970
TP3971
TP3972
TP3993
TP3994
TP4013
TP4014
TP4091
TP4092
TP4093
TP4117
TP411S
TP4119
TP4220
TP4221
TP4222
TP4223
TP4224
TP4302
TP4303
TP4304
TP4314
TP4338
TP4339
TP4340
TP4341
TP4354
TP4355
TP4356
TP43S1
TP43S4
TP4386
TP4391
TP4392
2-38
Sprague
Type
TP3694
TP3700
TP3701
TP3724
TP3724A
TP379S
TP379SA
TP3799
TP3799A
TP3S21
TP3S22
TP3S23
TP3S24
TP3966
TP3967
TP3967A
TP396S
TP396SA
TP3969
TP3969A
TP3970
TP3971
TP3972
TP3993
TP3994
TP4013
TP4014
TP4091
TP4092
TP4093
TP4117
TP411S
TP4119
TP4220
TP4221
TP4222
TP4223
TP4224
TP4302
TP4303
TP4304
TP4314
TP4338
TP4339
TP4340
TP4341
TP4354
TP4355
TP4356
TP43S1
TP4384
TP43S6
TP4391
TP4392
Ratings
(Page)
Sprague Package
Process (Page)
3-31
3-31
3-31
3-31
3-31
3-40
3-40
3-40
3-40
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-48
3-49
3-32
3-32
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-40
3-45
3-45
3-45
3-45
3-40
3-40
3-40
3-49
3-32
3-32
3-45
3-45
FFB
JLA
DID
BHB
BHB
BXE
BXE
BXE
BXE
NJ32
NJ32
NJ32
NJ32
NJ26
NJ26
NJ26
NJ26
NJ26
NJ16
NJ16
NJ132
NJ132
NJ132
PJ99
PJ99
BHB
BHB
NJ132
NJ132
NJ132
NJ01
NJ01
NJ01
NJ16
NJ32
NJ32
NJ32
NJ32
NJ26
NJ26
NJ26
DJC
NJ16
NJ16
NJ16
NJ16
DJC
DJC
DJC
PJ32
JGA
JGA
NJ132
NJ132
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-S
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-S
7-S
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-S
7-11
7-11
7-11
7-11
7-8
7-8
7-8
7-11
7-S
7-S
7-11
7-11
ALPHANUMERIC INDEX
Device
Type
TP4393
TP4413
TP4415
TP4416
TP4416A
TP4856
TP4856A
TP4857
TP4857A
TP4858
TP4858A
TP4859
TP4859A
TP4860
TP4860A
TP4861
TP4861A
TP4867
TP4868
TP4869
TP4926
TP4927
TP5018
TP5019
TP5020
TP5021
TP5033
TP5058
TP5059
TP5078
TP5103
TP51D4
TP51D5
TP5114
TP5115
TP5116
TP5127
TP5131
TP5132
TP5133
TP5137
TP5138
TP5139
TP5163
TP5189
TP5245
TP5246
TP5247
TP5248
TP5358
TP5359
TP5360
TP5361
TP5362
Sprague
Type
TP4393
TP4413
TP4415
TP4416
TP4416A
TP4856
TP4856A
TP4857
TP4857A
TP4858
TP4858A
TP4859
TP4859A
TP4860
TP4860A
TP4861
TP4861A
TP4867
TP4868
TP4869
TP4926
TP4927
TP5018
TP5019
TP5020
TP5021
TP5033
TP5058
TP5059
TP5078
TP5103
TP51D4
TP51D5
TP5114
TP5115
TP5116
TP5127
TP5131
TP5132
TP5133
TP5137
TP5138
TP5139
TP5163
TP5189
TP5245
TP5246
TP5247
TP5248
TP5358
TP5359
TP536D
TP5361
TP5362
Ratings
(Page)
Sprague Package
Process (Page)
3-45
3-40
3-40
3-45
3-45
3-45
3-45
3-45
3-45
3-45
3-46
3-46
3-46
3-46
3-46
3-46
3-46
3-46
3-46
3-46
3-32
3-32
3-49
3-49
3-49
3-49
3-49
3-32
3-32
3-46
3-46
3-46
3-46
3-49
3-49
3-49
3-32
3-33
3-33
3-33
3-33
3-41
3-41
3-46
3-33
3-46
3-46
3-46
3-46
3-46
3-46
3-46
3-46
3-46
NJ132
JFA
JFA
NJ26
NJ26
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ16
NJ16
NJ16
BLA
BLA
PJ99
PJ99
PJ32
PJ32
PJ32
BLA
BLA
NJ26
NJ26
NJ26
NJ26
PJ99
PJ99
PJ99
FFB
FEE
FEE
FEE
JLA
BXE
BXE
NJ26
BHB
NJ26
NJ26
NJ26
NJ26
NJ16
NJ16
NJ16
NJ16
NJ32
7-11
7-8
7-8
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-8
7-8
7-11
7-11
7-11
7-11
7-11
7-8
7-8
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-11
7-8
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
Device
Type
TP5363
TP5364
TP5368
TP5369
TP5370
TP5371
TP5372
TP5373
TP5374
TP5375
TP5376
TP5377
TP5378
TP5379
TP5380
TP5381
TP5382
TP5383
TP5397
TP5398
TP5447
TP5448
TP5449
TP5450
TP5451
TP5556
TP5557
TP5558
TP5668
TP5669
TP567D
TP581D
TP5811
TP5812
TP5813
TP5814
TP5815
TP5816
TP5817
TP5818
TP5819
TP582D
TP5821
TP5822
TP5823
TP5824
TP5825
TP5826
TP5827
TP5828
TP5855
TP5856
TP5857
TP5858
2-39
Sprague
Type
TP5363
TP5364
TP5368
TP5369
TP5370
TP5371
TP5372
TP5373
TP5374
TP5375
TP5376
TP5377
TP5378
TP5379
TP5380
TP5381
TP5382
TP5383
TP5397
TP5398
TP5447
TP5448
TP5449
TP5450
TP5451
TP5556
TP5557
TP5558
TP5668
TP5669
TP567D
TP581D
TP5811
TP5812
TP5813
TP5814
TP5815
TP5816
TP5817
TP5818
TP5819
TP582D
TP5821
TP5822
TP5823
TP5824
TP5825
TP5826
TP5827
TP5828
TP5855
TP5856
TP5857
TP5858
Ratings
(Page)
Sprague Package
Process (Page)
3-46
3-46
3-33
3-33
3-33
3-33
3-41
3-41
3-41
3-41
3-33
3-33
3-41
3-41
3-33
3-33
3-41
3-41
3-46
3-46
3-41
3-41
3-33
3-33
3-33
3-46
3-46
3-46
3-46
3-46
3-46
3-34
3-41
3-34
3-41
3-34
3-41
3-34
3-41
3-34
3-41
3-34
3-41
3-34
3-41
3-34
3-34
3-34
3-34
3-34
3-41
3-34
3-41
3-34
NJ32
NJ32
DCA
DCA
DCA
DCA
JFA
JFA
JFA
JFA
JGA
JGA
JFA
JFA
FFB
FFB
BTB
BTB
NJ26L
NJ26L
JFA
JFA
JGA
JGA
JGA
NJ16
NJ16
NJ16
NJ16
NJ32
NJ32
JLA
JMA
JLA
JMA
JLA
JMA
JLA
JMA
JLA
JMA
JLA
JMA
JLA
JMA
FFB
FEE
FEE
FEE
FEE
DJC
DID
DJC
DID
7-11
7-11
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-11
7-11
7-8
7-8
7-8
7-8
7-8
7-11
7-11
7-11
7-11
7-11
7-11
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
7-8
ALPHANUMERIC INDEX
Device
Type
TP5949
TP5950
TP5951
TP5952
TP5953
TP5961
TP5962
TP6222
TP6224
TP6449
TP6450
TP6451
TP6452
TP6453
TP6454
TPBC264A
TPBC264B
TPBC264C
TPBC264D
TPJ105
TPJ106
TPJ107
TPJ108
TPJ109
. TPJ110
TPJ308
TPJ309
TPJ31 0
TPP4000
TPQ2221
TPQ2221A
TPQ2222
TPQ2222A
TPQ2483
TPQ2484
TPQ2906
TPQ2906A
TPQ2907
TPQ2907A
TPQ3724
TPQ3725
TPQ3798
TPQ3799
TPQ3904
TPQ3906
TPQ4001A
TPQ4002A
TPQ4354
TPQ5400
TPQ5401
TPQ5550
TPQ5551
TPQ6001
TPQ6002
Sprague
Type
TP5949
TP5950
TP5951
TP5952
TP5953
TP5961
TP5962
TP6222
TP6224
TP6449
TP6450
TP6451
TP6452
TP6453
TP6454
TPBC264A
TPBC264B
TPBC264C
TPBC264D
TPJ105
TPJ106
TPJ107
TPJ108
TPJ109
TPJ110
TPJ308
TPJ309
TPJ310
TPP4000
TPQ2221
TPQ2221A
TPQ2222
TPQ2222A
TPQ2483
TPQ2484
TPQ2906
TPQ2906A
TPQ2907
TPQ2907A
TPQ3724
TPQ3725
TPQ3798
TPQ3799
TPQ3904
TPQ3906
TPQ4001A
TPQ4002A
TPQ4354
TPQ5400
TPQ5401
TPQ5550
TPQ5551
TPQ6001
TPQ6002
Ratings
(Page)
3-46
3-46
3-47
3-47
3-47
3-34
3-34
3-34
3-34
3-47
3-47
3-47
3-47
3-47
3-47
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
5-4
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
Sprague Package
Process (Page)
NJ32
NJ32
NJ32
NJ32
NJ32
FEE
FEE
FEE
FEE
NJ42
NJ42
NJ132l
NJ132l
NJ132l
NJ132l
NJ26
NJ26
NJ26
NJ26
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ99
NJ99
NJ99
ABA
TNl
TNl
TNl
TNl
FEE
FEE
TQl
TQl
TQl
TQl
BHB
BHB
STL
STL
TVO
BTB
BHB
BHB
DJC
VHB
VHB
VXA
VXA
TNUTQL
TNL/TQL
7-11
7-11
7-11
7-11
7-11
7-8
7-8
7-8
7-8
7-11
7-11
7-11
7-11
7-11
7-11
7-13
7-13
7-13
7-13
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
Device
Type
TPQ6100
TPQ6100A
TPQ6426
TPQ6427
TPQ6501
TPQ6502
TPQ6600
TPQ6600A
TPQ6700
TPQ7041
TPQ7042
TPQ7043
TPQ7051
TPQ7052
TPQ7053
TPQ7091
TPQ7092
TPQ7093
TPQA05
TPQA06
TPQA55
TPQA56
TPS8098
TPS8099
TPU304
TPU305
TPU306
TPU308
TPU309
TPU310
TPU1897
TPU1898
TPU1899
U231
U232
U233
U234
U235
U257
U290
U291
U304
U305
U306
U308
2-40
Sprague
Type
Ratings
(Page)
TPQ6100
TPQ6100A
TPQ6426
TPQ6427
TPQ6501
TPQ6502
TPQ6600
TPQ6600A
TPQ6700
TPQ7041
TPQ7042
TPQ7043
TPQ7051
TPQ7052
TPQ7053
TPQ7091
TPQ7092
TPQ7093
TPQA05
TPQA06
TPQA55
TPQA56
TPS8098
TPS8099
TPU304
TPU305
TPU306
TPU308
TPU309
TPU310
TPU1897
TPU1898
TPU1899
U231
U232
U233
U234
U235
U257
THJU290
THJU291
THJU304
TMPFU304
TPU304
U304
THJU305
TMPFU305
TPU305
U305
THJU306
TMPFU306
TPU306
U306
THJU308
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-5
333-49
3-49
3-49
3-48
3-48
3-48
3-48
3-48
3-48
3-61
3-61
3-61
3-61
3-61
3--61
3-27
3-27
3-29
3-57
3-49
3-62
3-29
3-57
3-49
3-62
3-29
3-57
3-62
3-49
3-27
Sprague Package
Process (Page)
FEE/BXE
FEE/BXE
TPM
TPM
TNL!TQl
TNL!TQl
FEE/BXE
FEE/BXE
TVO/BTB
BLA
BLA
BlA
BLAlBMA
BlAlBMA
BLAlBMA
BMA
BMA
BMA
DAC
DAC
BFA
BFA
JlA
JLA
PJ99
PJ99
PJ99
NJ99
NJ99
NJ99
NJ132
NJ132
NJ132
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ28D
NJ903
NJ903
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
NJ99
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-24
7-8
7-8
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-11
7-5
7-5
7-5
7-5
7-5
7-7
7-26
7-26
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
7-17
7-11
7-2
7-26
ALPHANUMERIC INDEX
Device
Type
U309
U310
U401
U402
U403
U404
U405
U406
U410
U411
U412
Sprague
Type
TMPFU308
TPU308
THJU309
TMPFU309
TPU309
THJU310
TMPFU310
TPU310
THJU401
U401
THJU402
U402
THJU403
U403
THJU404
U404
THJU405
U405
THJU406
U406
U410
U411
U412
Ratings
(Page)
3-56
3-48
3-27
3-56
3-48
3-27
3-56
3-48
3-27
3-61
3-27
3-61
3-27
3-61
3-28
3-61
3-28
3-61
3-28
3-61
3-61
3-61
3-61
Sprague Package
Process (Page)
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ99
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
NJ35D
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-5
7-26
7-5
7-5
7-5
7-5
Device
Type
U1897
U1898
U1899
ULN-2031A
ULN-2032A
ULN-2033A
ULN-2046A
ULN-2046A-1
ULN-2047A
ULN-2054A
ULN-2081A
ULN-2082A
ULN-2083A
ULN-2083A-1
ULN-2086A
ULS-2045H
ULS-2083H
2-41
Sprague
Type
THJU1897
TMPFU1897
TPU1897
THJU1898
TMPFU1898
TPU1898
THJU1899
TMPFU1899
TPU1899
ULN-2031A
ULN-2032A
ULN-2033A
ULN-2046A
ULN-2046A-1
ULN-2047A
ULN-2054A
ULN-2081A
ULN-2082A
ULN-2083A
ULN-2083A-1
ULN-2086A
ULS-2045H
ULS-2083H
Ratings
(Page)
Sprague Package
Process (Page)
3-28
3-56
3-48
3-28
3-56
3-48
3-28
3-56
3-48
5-10
5-10
5-10
5-12
5-14
5-15
5-16
5-19
5-19
5-20
5-22
5-23
5-12
5-20
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
NJ132
7-26
7-17
7-11
7-26
7-17
7-11
7-26
7-17
7-11
7-25
7-25
7-25
7-24
7-24
7-25
7-24
7-25
7-25
7-25
7-25
7-24
I
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I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
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r:) I
ELECTRICAL CHARACTERISTICS
I
I
!'
I
SECTION 3-ELECTRICAL CHARACTERISTICS
BIPOLAR TRANSISTOR CHIPS
NPN TRANSISTORS
'TH' Device Types .............................................. .
'MPS' Device Types ............................................. .
'D' Device Types ............................................... .
Pro-Electron Device Types ........................................ .
Power Devices ................................................. .
3-3
3-9
3-12
3-13
3-15
PNP TRANSISTORS
'TH' Device Types .............................................. .
'MPS' Device Types ............................................. .
'0' Device Types ............................................... .
Pro-Electron Device Types ........................................ .
Power Devices ................................................. .
3-15
3-19
3-20
3-21
3-23
JUNCTION FIELD-EFFECT TRANSISTOR CHIPS
N-Channel JFETs ............................................... .
P-Channel JFETs ............................................... .
3-24
3-28
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN TRANSISTORS
'2N' and 'TP' Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
'MPS' Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
'0' Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pro-Electron Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
PNP TRANSISTORS
'2N' and 'TP' Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
'MPS' Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
'0' Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pro-Electron Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
3-30
3-35
3-37
3-38
3-39
3-42
3-43
3-44
PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS
N-Channel JFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
P-Channel JFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-45
3-48
SMALL-OUTLINE BIPOLAR TRANSISTORS
NPN Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
PN PTransistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
3-50
3-52
SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS
N-Channel JFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
P-Channel JFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-54
3-57
3-1
I
METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS
N-CHANNEL JFETS
General-Purpose Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Low-Noise Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Low-Leakage Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High-Voltage Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Switches. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RFAmplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Monolithic Dual Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
3-58
3-59
3-59
3-59
3-60
3-60
3-61
P-CHANNEL JFETS
General-Purpose Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Switches. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
3-62
3-62
DIODE CHIPS
'THD' Rectifiers and General-Purpose Diodes. . .. . . . . . . . . . . . . . . . . . . . . ..
'THD' Schottky Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
'THD' Photodiodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
'TH' Power Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
'THZ' Series 'A' Zener Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
'THZ' Series '8' Zener Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
'THZ' Series 'W' Zener Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
'THZ' Temperature-Compensated Zener Diodes .......'. . . . . . . . . . . . . . . . .
'8ZX55' Pro-Electron Zener Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
3-63
3-63
3-64
3-64
3-65
3-67
3-69
3-70
3-70
SMALL-OUTLINE DIODES
'TMPD' General-Purpose and Low-Leakage Diodes. . . . . . . . . . . . . . . . . . . . .
'TMPD' Schottky Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
'TMPZ' Zener Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
'TMPZ' Temperature-Compensated Zener Diodes. . . . . . . . . . . . . . . . . . . . . ..
Pro-Electron Device Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
'8ZX84' Zener Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3-2
3-72
3-72
3-73
3-74
3-75
3-75
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
DC Current Gain
ICBO
Device
Type
Max.
(rnA)
THC697
THC699
THC71B
THC760
THC760A
THC915
THC916
THC917
THC91B
THC929
THC929A
THC930
THC930A
THC956
THC9B1
THC1420
THC1566
THC1613
THC1711
THC2017
THC2102
THC2192
THC2192A
THC2195
THC2195A
THC221B
THC221BA
THC2219
THC2219A
THC2221
THC2221A
THC2222
THC2222A
THC2243
THC2243A
THC2270
THC24B4
THC2504
THC2509
500
BOO
500
100
100
100
100
50
50
100
100
100
100
500
100
500
100
500
500
BOO
BOO
BOO
BOO
BOO
BOO
500
500
500
500
500
500
500
500
BOO
BOO
BOO
100
100
100
V(BR)CBO V(BR)CEO V(BR)EBO
(V)
(V)
(V)
Max.
(nA)
Co VCB hFE
(V) Min.
45
BO
40
45
60
50
25
15
15
45
45
45
60
35
BO
30
60
35
35
60
65
40
40
25
25
30
40
30
40
30
40
30
40
BO
BO
45
60
45
BO
1.0
2.0 2
1.0 2
200
100
10
40
40
40
76
76
50
50
20
20
40
40
100
100
100
36
100
BO
40
100
50
40
100
100
20
20
40
40
100
100
40
40
100
100
40
40
50
100
100
40
60
120
60
45
60
70
45
30
30
45
60
45
60
75
BO
60
BO
75
75
60
120
60
60
45
45
60
75
60
75
60
75
60
75
120
120
60
60
60
125.
5.0
5.0
5.0
B.O
B.O
5.0
5.0
3.0
3.0
5.0
6.0
5.0
6.0
7.0
B.O
5.0
5.0
7.0
7.0
B.O
7.0
5.0
5.0
5.0
5.0
5.0
6.0
5.0
6.0
5.0
6.0
5.0
6.0
7.0
7.0
7.0
6.0
6.0
7.0
30
60
30
30
30
60
10 30
1.0 15
10 15
10 45
2.0 45
10 45
2.0 45
10 60
1.0 30
1.0 2 30
1.0 2 40
10 60
10 60
10 2 30
2.0 60
10 30
10 30
100 30
100 30
10 50
10 60
10 50
10 60
10 50
10 60
10 50
10 60
10 60
10 60
50 60
10 45
2.0 45
5.0 100
2
hFE
Co Ic Co VCE
(V)
Max. (rnA)
120 150 10
120 150 10
120 150 10
300 1.0 5.0
333 1.0 5.0
200 10 5.0
200 10 1.0
3.0 1.0
3.0 1.0
120 0.01 5.0
120 0.01 5.0
300 0.01 5.0
300 0.01 5.0
300 150 10
100 1.0 5.0
300 150 10
200 5.0 5.0
120 150 10
300 150 10
200 200 10
120 150 10
300 150 10
300 150 10
150 10
150 10
120 150 10
120 150 10
300 150 10
300 150 10
120 150 10
120 150 10
300 150 10
300 150 10
120 150 10
120 150 10
200 150 10
500 10 2 5.0
300 10 2 5.0
10 5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) fLA.
3) V(BR)cES/ICEs, as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3---3
IT
VCE ("!)
Ic
Max.
(V)
1.5
5.0
1.5
1.0
1.0
1.0
0.5·
0.5
0.4
1.0
0.5
1.0
0.5
1.5
3.0
1.5
1.0
1.5
1.5
2.0
0.5
0.35
0.25
0.35
0.25
0.4
0.3
0.4
0.3
0.4
0.3
0.4
0.3
0.35
0.25
0.9
0.35
0.5
1.0
Co Ic Min. (olc COb 1 t,1 NF1
(rnA) (MHz) (rnA) (pF) (ns) (dB)
150
150
150
10
10
10
10
3.0
10
10
10
10
10
150
10
150
10
150
150
200
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
1.0
10
5.0
50
50
50
50
50
-
-
500
600
30
45
30
45
70
50
50
60
60
60
-
50 35
50 20
50 35
1.0 B.O
1.0 B.O
- 3.5
6.0
4.0 3.0
4.0 1.7
0.5 B.O
0.5 6.0
0.5 B.O
0.5 6.0
50 25
1.0 5.0
50 35
5.0 10
50 25
50 25
-
-
60 50 15
50 50 10
50 50 20
50 50 20
50 50 20
250 20 B.O
250 20 B.O
250 20 B.O
300 20 B.O
250 20 B.O
250 20 B.O
250 20 B.O
250 20 B.O
50 50 15
50 50 15
100 50 15
15 0.05 6.0
45 0.5 7.0
45 5.0 6.0
-
-
-
-
225
-
-
-
4.0
4.0
3.0
3.0
B.O
-
-
12
B.O
-
6.0
-
-
-
-
225
-
-
-
225
-
225
-
-
-
6.0
3.0
3.0
7.0
Process
BBC
DAC
BBC
BAA
BAA
BAA
BAA
DMA
DMA
BAA
BAA
BAA
BAA
BBC
BAA
BBC
BAA
BBC
BBC
DAC
DAC
DAC
DAC
DAC
DAC
BBC
DCA
BBC
DCA
BBC
DCA
BBC
DCA
DAC
DAC
DAC
BAA
BAA
BAA
II
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
ICBO
Device
Type
Ic
Max.
(rnA)
V(BR)CBO V(BR)CEO V(BR)EBO
(V)
(V)
(V)
THC2510
100 100
65 7.0
THC2511
100 80
50 7.0
THC2586
100 60
45 6.0
THC2712
500 18
18 5.0
THC2714
500 18
18 5.0
THC2923
500 25
25 5.0
THC2924
500 25
25 5.0
THC2925
500 25
25 5.0
THC2926
500 18
18 5.0
THC3009
300 40
15 4.0
THC3013
300 40
15 5.0
THC3019
800 140
80 7.0
THC3020 1000 140
80 7.0
THC3053
800 60
40 5.0
THC3107
800 100
60 7.0
THC3108
800 100
60 7.0
THC3109
800 80
40 7.0
THC3110
800 80
40 7.0
THC3114
150 150 5.0
THC3115
500 60
20 5.0
THC3116
500 60
20 5.0
THC3117
100 60
60 6.0
THC3252
800 60
30 5.0
THC3253
800 75
40 5.0
THC3299
500 60
30 5.0
THC3300
500 60
30 5.0
THC3301
500 60
30 5.0
THC3302
500 60
30 5.0
THC3390
500 25
25 5.0
THC3391
500 25
25 5.0
THC3391A 500 25
25 5.0
THC3392
500 25
25 5.0
THC3393
500 25
25 5.0
THC3394
500 25
25 5.0
THC3395
500 25
25 5.0
THC3396
500 25
25 5.0
THC3397
500 25
25 5.0
THC3398
500 25
25 5.0
THC3402
500 25
25 5.0
THC3403
500 25
25 5.0
THC3404
500 50
50 5.0
THC3405
500 50
50 5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) ,...A.
Max.
(nA)
@VCB hFE
(V) Min.
DC Current Gain
hFE
@I c @VCE
(V)
Max. (rnA)
5.0 80 150 500 10 5.0
5.0 60 240 750 10 5.0
2.0 45 120 360 0.01 5.0
500 18 75 225 2.0 4.5
500 18 75 225 2.0 4.5
100 25 90 180 2.0 10
100 25 150 300 2.0 10
100 25 235 470 2.0 10
500 18 35 470 2.0 10
5003 20 30 120 30 0.4
3003 20 30 120 30 0.4
10 .90 100 300 150 10
10 90 30 100 500 10
250 30 50 250 150 10
10 60 100 300 150 1.0
10 60 40 120 150 10
103 60 100 300 150 1.0
10 3 60 40 120 150 1.0
10 100 30 120 30 10
25 50 40 120 150 10
25 50 100 300 150 10
10 45 250 500 0.01 5.0
500 40 30 90 500 1.0
500 60 25 75 375 1.0
103 50 40 120 150 10
103 50 100 300 150 10
103 50 40 120 150 10
103 50 100 300 150 10
100 18 400 800 2.0 4.5
100 18 250 500 2.0 4.5
100 18 250 500 2.0 4.5
100 18 150 300 2.0 4.5
100 18 90 180 2.0 4.5
100 18 55 110 2.0 4.5
100 18 150 500 2.0 4.5
100 18 90 500 2.0 4.5
100 18 55 500 2.0 4.5
100 18 55 800 2.0 4.5
100 25 75 225 2.0 4.5
100 25 180 540 2.0 4.5
100 50 75 225 2.0 4.5
100 50 180 540 2.0 4.5
3) V(BR)CESliCES' as applicable.
4) rnA.
5) V(BR)CER at R=10n.
3-4
fT
VCE(sat)
Max.
(V)
@Ic Min. @Ic Cob' I'
NF'
s
(rnA) (MHz) (rnA) (pF) (ns) (dB)
1.0 5.0
1.0 5.0
0.5 10
45
45
45
80
5.0 6.0
5.0 6.0
0.5 7.0
2.0 12
-
-
0.3
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
10
5.0
5.0
12
12
15
20
20
25
25
9.0
8.0
8.0
4.5
12
12
8.0
8.0
8.0
8.0
10
10
10
10
10
10
10
10
10
10
-
-
-
0.18
0.18
0.2
0.2
1.4
0.25
0.25
0.25
0.25
1.0
0.5
0.5
0.35
0.5
0.6
0.22
0.22
0.22
0.22
30
30
150
150
150
150
150
150
150
50
150
150
1.0
500
500
150
150
150
150
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
0.3
0.3
0.3
-
50
50
50
50
350 30
350 30
100 50
80 50
100 50
70 50
60 50
70 50
60 50
40 30
250 20
250 20
60 0.5
200 50
175 50
250 50
250 50
250 50
250 50
-
-
-
4.0
4.0
3.0
-
- -
-
25 25 - 4.0
-
-
1000
600
1000
600
7.0
7.0
7.0
7.0
-
-
500
500
-
70
70
150
150
150
150
-
-
5.0
-
15
- - -
-
-
- -
-
- -
-
Process
BAA
BAA
BAA
BBC
BBC
BBC
BBC
BBC
BBC
BJB
BJB
DAC
DSA
DAC
DAC
DAC
DAC
DAC
AJA
BBC
BBC
BAA
BHB
BHB
DCA
DCA
DCA
DCA
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BBC
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
THC3414
THC3415
THC3416
THC3417
THC3444
THC349B
THC3499
THC3500
THC3501
THC3563
THC3564
THC3565
THC3566
THC3567
THC356B
THC3569
THC3641
THC3642
THC3643
THC3646
THC3691
THC3692
THC3693
THC3694
THC3700
THC3701
THC3704
THC3705
THC3706
THC3707
THC370B
THC3709
THC3710
THC3711
THC3721
THC3724
THC3724A
THC3725
THC3725A
THC3742
THC3793
THC3794
DC Current Gain
fT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (il VCB hFE hFE (i11c (u VCE Max. (u Ic Min. (wlc Cob 1 t1
s
(rnA)
(V)
(V)
(V)
(nA) (V) Min. Max. (rnA) (V)
(V) (rnA) (MHz) (rnA) (pF) (ns)
500
500
500
500
25
25
50
50
BOO
BO
500
500
300
300
50
50
100
500
100
100
150
150
30
30
30
40
BOO
Bo
BOO
BOO
500
500
500
300
100
100
100
100
BOO
Bo
Bo
60 3
60
60
40 3
35
35
45
45
140
140
50
50
40
30
30
30
30
30
BOO
500
500
500
100
100
100
100
100
500
25
25
50
50
50
100
100
150
150
15
15
25
30
40
60
40
30
45
30
15
20
20
45
45
BO
BO
30
30
20
30
30
30
30
30
1B
1B
BOO
BOO
BOO
BOO
50
50
BO
500
300
40
40
30
30
50
50
300
20
20
BOO
BOO
BO
5.0
5.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
2.0
4.0
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
4.0
4.0
4.0
4.0
7.0
7.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
6.0
5.0
6.0
6.0
6.0
6.0
7.0
5.0
5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) ftA.
100
100
100
100
500
50
50
50
50
50
50
50
50
50
50
50
50 3
50 3
50 3
5003
50
50
50
50
10
10
100
100
100
100
100
100
100
100
500
1700
500
1700
500
200
500
500
25
25
50
50
60
50
50
75
75
15
15
25
20
40
40
40
50
50
50
20
15
15
35
30
90
90
20
20
20
20
20
20
20
20
75 225
1BO 540
75 225
1BO 540
20
40
100
40
100
20
20
150
150
40
40
100
40
40
100
30
40
100
40
100
100
40
100
50
30
100
45
45
90
1BO
1B 60
40 60
40 60
60 60
60 60
200 20
15 20
15 100
60
120
300
120
300
200
500
600
600
120
120
300
120
120
300
120
160
400
160
400
300
120
300
150
600
400
660
165
330
660
660
150
150
150
150
200
120
600
2.0
2.0
2.0
2.0
500
150
150
150
150
15
15
1.0
10
150
150
150
150
150
150
30
10
10
10
10
150
150
50
50
50
0.1
1.0
1.0
1.0
1.0
2.0
100
100
100
100
30
10
10
4.5
4.5
4.5
4.5
1.0
10
10
10
10
10
10
10
10
1.0
1.0
1.0
10
10
10
0.4
1.0
1.0
10
1.0
10
10
2.0
2.0
2.0
5.0
5.0
5.0
5.0
5.0
10
1.0
1.0
1.0
1.0
10
10
10
3) V(BR)CES/lcEs, as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-5
0.3
0.3
0.3
0.3
0.6
0.6
0.6
0.4
0.4
-
0.3
0.35
1.0
0.25
0.25
0.25
0.22
0.22
0.22
0.2
0.7
0.7
-
0.2
0.2
0.6
O.B
1.0
1.0
1.0
1.0
1.0
1.0
50
50
50
50
500
300
300
150
150
-
150
150
150
150
150
600
20 400
1.0 40
100 150 60
150 60
150 60
150 250
150 250
150 250
30 350
10 200
10 200
200
200
150 100
150 BO
100 100
100 100
100 100
10 10 10 10 10 -
-
-
-
0.32
0.32
0.4
0.4
0.75
0.4
0.6
300
300
300
300
10
10
10
300
300
300
300
60
100
100
-
-
-
50
20
20
20
30
B.o
15
1.0
-
50
50
50
50
50
50
30
10
10
10
10
50
50
50
50
50
-
-
12
10
10
-
70
-
B.o
B.o 1.7
3.5
4.0
25
20
20
20
B.o
B.o
B.o
5.0
3.5
3.5
3.5
6.0
12
12
12
12
12
-
NF1
(dB)
-
-
-
-
-
-
-
2B
-
4.0
-
4.0
-
-
-
-
-
-
-
-
-
-
-
-
50
50
50
50
10
10
10
-
12 12 60
12 50
10 60
10 50
6.0 10 10 -
-
5.0
-
-
-
-
Process
BBC
BBC
BBC
BBC
BHB
AJA
AJA
AJA
AJA
DMA
DMA
BAA
BBC
DAC
DAC
DAC
BBC
BBC
BBC
BJB
BAA
BAA
FFB
FFB
DAC
DSA
BBC
BBC
BBC
BAA
BAA
BAA
BAA
BAA
BBC
BHB
BHB
BHB
BHB
BLA
DAC
DAC
I
BIPOLAR TRANSISTOR CHIPS
N PN Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
THC3825
THC3827
THC3858
THC3858A
THC3859
THC3859A
THC3860
THC3877
THC3877A
THC3900
THC3901
THC3903
THC3904
THC3923
THC3945
THC3946
THC3947
THC3974
THC3976
THC4013
THC4014
THC4047
THC4123
THC4124
THC4140
THC4141
THC4252
THC4286
THC4287
THC4292
THC4293
THC4384
THC4386
THC4400
THC4401
THC4409
THC4410
THC4424
THC4924
THC4926
THC4927
THC4944
DC Current Gain
IT
ICBO
VCE(sa))
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (aVCB hFE
hFE (a Ic (aVCE Max. (a Ie Min. (a Ie COb 1 ts1
(V)
(nA) (V) Min. Max. (rnA) (V)
(V) (rnA) (MHz) (rnA) (pF) (ns)
(rnA)
(V)
(V)
50
100
100
100
100
100
100
100
100
100
100
'00
100
100
800
100
100
500
500
800
800
800
100
100
500
500
50
100
100
50,
50
500
500
500
500
100
100
500
500
500
500
500
30
60
30
60
30
60
30
70
85
18
18
60
60
150
70
60
60
60
60
50
80
80
40
30
60
60
30
30
45
30
30
40
40
60
60
80
120
40
100
200
250
75
15
45
30
60
30
60
30
70
85
18
18
40
40
150
50
40
40
30
30
30
50
50
30
25
30
30
18
25
45
15
15
30
30
40
40
50
80
40
100
200
250
40
4.0 100 15
4.0 100 30
4.0 500 18
6.0 500 18
4.0 500 18
6.0 500 18
4.0 500 18
4.0 500 70
4.0 500 70
5.0 100 18
5.0 100 15
6.0
50 30
6.0
50 30
10 100
6.0
8.0
40 60
- 6.0
- 6.0
5.0 500 40
5.0 500 40
6.0 1700 40
6.0 1700 60
6.0 1700 60
5.0
50 20
5.0
50 20
5.0
5.0
4.0
50 15
6.0
50 25
7.0
10 30
3.0 500 15
3.0 500 15
5.0
10 30
5.0
10 30
6.0 100 30
6.0 100 30
5.0
10 60
5.0
10 100
5.0 100 25
5.0 100 50
7.0 100 100
7.0 100 100
6.0
10 60
NOTES:
1) Maximum at typical JEDEC conditions.
2) fJ.A.
20
100
60
60
100
100
150
20
20
250
350
50
100
30
40
50
100
55
55
60
60
40
50
120
40
100
50
150
150
20
20
100
40
50
100
60
60
180
40
20
20
100
-
400
120
120
200
200
300
250
250
500
700
150
300
120
250
150
300
200
200
150
150
150
150
360
120
300
-
600
600
500
500
150
300
400
400
540
120
200
200
300
2.0
10
2.0
10
2.0
10
2.0
2.0
2.0
2.0
2.0
10
10
25
150
10
10
10
10
100
100
100
2.0
2.0
150
150
2.0
1.0
1.0
3.0
3.0
0.01
0.01
150
150
10
10
2.0
150
30
30
150
10
10
4.5
1.0
4.5
1.0
4.5
4.5
4.5
4.5
4.5
1.0
1.0
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
10
10
5.0
5.0
1.0
1.0
5.0
5.0
1.0
1.0
1.0
1.0
4.5
10
10
10
10
3) V(BRICEs!l cEs ' as applicable.
4) rnA.
5) V(BR)CER at R=10n.
3-6
0.25 2.0 200
200
90
90
90
90
90
0.2 10 250
0.2 10 300
1.0 25 40
0.5 150 60
0.2 10 250
0.2 10 300
0.3 150 0.3 150 0.2 100 300
0.26 100 300
0.4 300 250
0.3 50 250
0.3 50 300
0.4 150 250
0.4 150 250
600
0.35 1.0 40
0.35 1.0 40
0.6 10 600
0.6 10 600
0.2 10 30
0.2 10 30
0.4 150 200
0.4 150 250
0.2 1.0 60
0.2 1.0 60
0.3 50 0.25 10 10
30
30
0.3 150 300
2.0
10
2.0
2.0
2.0
2.0
2.0
-
10
10
10
50
10
10
NF1
(dB)
3.5 - 5.5
3.5 - 4.0 - 4.0 - -4.0 - 4.0 - 4.0 - - 12 - 5.0
4.0 - 6.0
4.0 - 5.0
3.5 - 12 4.0 375 5.0
4.0 450 5.0
-
-
7.0
-
50
50
50
10
10
20
20
2.0
1.0
1.0
4.0
4.0
0.5
0.5
20
20
10
10
12 60 10 60 10 60 4.0 - 6.0
4.0 - 5.0
8.0 310 8.0 310 6.0 - 6.0 - 5.0
3.5 - 6.0
3.5 - 6.0
8.0 - 2.0
8.0 - 3.0
6.5 225 6.5 225 12 12 -
-
-
-
-
-
20 10
20 6.0
20 6.0
20 8.0
-
-
-
-
-
-
225
Process
DMA
BAA
BAA
BAA
BAA
BAA
BAA
BAA
BAA
BAA
BAA
FFB
FFB
VXA
DAC
FFB
FFB
BBC
BBC
BHB
BHB
BHB
BAA
BAA
DCA
DCA
DLA
BAA
BAA
DMA
DMA
BBC
BBC
DCA
DCA
BAA
BAA
BBC
AJA
DVA
DVA
DCA
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
fT
ICBO
VCE(s,!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. cdiVcB hFE hFE Crt Ic Crt VCE Max. Cill c Min. Ca.lc Cob 1 tS1 NF1
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
THC4945
75
500
40 6.0
THC4946 500
75
40 6.0
THC4951
500
60
30 5.0
THC4952 500
60
30 5.0
THC4953 500
60
30 5.0
THC4954
40
500
30 5.0
THC4966 100
50
50
THC4967
100
50
50
THC4968
100
50
50
THC4969
500
60
30 5.0
THC4970 500
60
30 5.0
THC505B
150 300 300 7.0
THC5059 150 250 250 6.0
THC50BB 100
35
30
THC5089 100
30
25
THC5127 100
20
12 3.0
THC512B 500
15
12 3.0
THC5129
500
15
12 3.0
THC5130
12 1.0
50
30
THC5131
100
20
15 3.0
THC5132
100
20
20 3.0
THC5133
100
20
1B 3.0
THC5135
BOO
30
25 4.0
THC5136 BOO
30
20 3.0
THC5137
800
30
20 3.0
THC5172
25
25 5.0
500
THC5174 100
90
75 5.0
THC51B9 BOO
60
35 5.0
THC5209
100
50
50
THC5210
100
50
50
THC5219
100
20
15 3.0
THC5220
500
15
15 3.0
THC5223
100
25
20 3.0
THC5225
100
25
25 4.0
THC5232
100
70
50 5.0
THC5232A 100
70
50 5.0
THC5249
100
70
50 5.0
THC5249A 100
70
50 5.0
THC5305 500
25
25
12
THC5306
500
25
25
12
THC5307
500
40
40
12
THC530B
500
40
40
12
NOTES:
1) Maximum at typical JEDEC conditions.
2) fLA.
10
10
50
50
50
50
50
50
50
10
10
50
50
50
50
50
50
50
50
50
50
50
300
100
100
100
500
500
50
50
100
100
100
300
30
30
30
30
100
100
100
100
60 100 300 150 10
60 100 300 150 10
40 60 200 150 10
40 100 300 150 10
40 200 600 150 10
30 60 600 150 10
35 100 300 0.1 5.0
35 200 600 0.1 5.0
35 100 300 0.1 5.0
50 40 120 150 10
50 100 300 150 10
100 35 150 30 25
100 30 150 30 25
20 300 900 0.1 5.0
15 400 1200 0.1 5.0
10 15 300 2.0 10
10 35 350 50 10
10 35 350 50 10
10 15 250 B.O 10
10 35 500 10 1.0
10 30 400 10 10
15 60 1000 1.0 5.0
15 50 600 10 10
20 20 400 150 1.0
20 20 400 150 1.0
25 100 500 10 10
60 40 600 10 5.0
30 35 - 500 1.0
35 100 300 0.1 5.0
35 200 600 0.1 5.0
10 35 500 2.0 10
10 30 600 50 10
10 50 BOO 2.0 10
15 30 600 50 10
50 250 500 2.0 5.0
50 250 500 2.0 5.0
50 400 BOO 2.0 5.0
50 400 BOO 2.0 5.0
25 2k 20k 2.0 5.0
25 7k 70k 2.0 5.0
40 2k 20k 2.0 5.0
40 7k 70k 2.0 5.0
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R = 100.
3-7
0.3 150
0.3 150
0.3 150
0.3 150
0.3 150
0.3 150
0.7 10
0.7 10
0.7 10
0.4 150
0.4 150
1.0 30
1.0 30
0.5 10
0.5 10
0.3 10
0.25 150
0.25 150
0.6 10
1 10
2.0 10
0.4 1.0
1.0 100
0.25 150
0.25 150
0.25 10
0.95 10
11000
0.7 10
0.7 10
0.4 10
0.5 150
0.7 10
300 20 B.O
300 20 B.O
250 20 B.O
250 20 B.O
250 20 B.O
250 20 B.O
30 0.5 4.0
30 0.5 4.0
30 0.5 4.0
250 20 B.O
250 20 B.O
30 10 10
30 10 10
- 4.0
- 4.0
150 2.0 3.5
200 50 10
200 50 10
450 B.O 1.7
100 10 6.0
200 10 3.5
40 1.0 5.0
40 30 25
40 50 35
40 50 35
10
- 5.0
250 50 12
30 0.5 4.0
30 0.5 4.0
150 10 4.0
100 20 10
150 10 4.0
O.B 100 50
20 20
- 4.0
0.125 10 - 4.0
0.125 10 0.125 10 - 0.125 10 1.4 200 60 2.0 10
1.4 200 60 2.0 10
1.4 200 60 2.0 10
1.4 200 60 2.0 10
225
225
400
400
400
400
-
-
4.0
3.0
4.0
-
-
-
-
-
-
3.0
2.0
-
-
-
-
-
-
70
-
-
4.0
3.0
-
-
-
-
-
5.0
-
3.0
-
Process
DCA
DCA
DCA
DCA
DCA
DCA
BAA
BAA
BAA
BBC
BBC
BLA
BLA
BAA
BAA
FFB
BBC
BBC
DMA
BAA
BAA
BAA
DAC
DAC
DAC
BBC
BAA
BHB
BAA
BAA
FFB
BBC
FFB
BAA
BAA
BAA
BAA
BAA
TPM
TPM
TPM
TPM
I
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
IT
ICBO
VCE(sat)
Ie
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @I c @VCE Max. @Ic Min. @Ic Cob l t,.1 NFl
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
THC5310
100 70
50 5.0
THC5368
500 60
30 5.0
THC5369
500 60
30 5.0
THC5370
500 60
30 5.0
THC5371
500 40
30 5.0
THC5376
500 60
30 5.0
THC5377
500 60
30 5.0
THC5380
100 60
40 6.0
THC5381
100 60
40 6.0
THC5418
500 25
25 4.0
25 4.0
THC5419
500 25
THC5420
25 4.0
500 25
THC5449
500 50
30 5.0
THC5450
500 50
30 5.0
THC5451
20 5.0
500 40
THC5550
600 160 140 6.0
THC5551
600 180 160 6.0
THC5655
500 275 250 6.0
THC5656
500 325 300 6.0
THC5770
50 30
15 4.5
THC5772
15 5.0
500 40
THC5810
800 35
25 5.0
THC5812
800 35
25 5.0
THC5814
800 50
40 5.0
THC5816
800 50
40 5.0
THC5818
800 50
40 5.0
THC5820
800 70
60 5.0
THC5822
800 70
60 5.0
THC5824
100 50
40 5.0
THC5825
100 50
40 5.0
THC5826
100 50
40 5.0
THC5827
100 50
40 5.0
THC5828
100 50
40 5.0
THC5830
600 120 100 5.0
THC5831
600 160 140 5.0
THC5832
600 160 140 5.0
THC5856 1000 60
60 5.0
THC5858 1000 80
80 5.0
THC5961
100 60
60 8.0
THC5962
100 45
45 8.0
THC5998
500 35
25 5.0
THC6008
500 35
25 5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) J.1A.
10
50
50
50
50
10
10
50
50
100
100
100
100
100
100
100
50
10
10
10
500
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
100
100
2.0
2.0
30
30
50 100 300 0.01 5.0
40 60 200 150 10
40 100 300 150 10
40 200 600 150 10
30 60 600 150 10
1.0 5.0
30 120 1.0 5.0
30 100 30 50 150 10 1.0
30 100 300 10 1.0
25 40 120 50 1.0
25 100 300 50 1.0
25 250 500 50 1.0
20 100 300 50 2.0
20 50 150 50 2.0
20 30 600 50 2.0
100 60 250 10 5.0
120 80 250 10 5.0
275 30 250 100 10
350 30 250 100 10
15 50 200 8.0 10
20 30 120 30 0.4
25 60 200 2.0 2.0
25 150 500 2.0 2.0
25 60 120 2.0 2.0
25 100 200 2.0 2.0
25 150 300 2.0 2.0
25 60 120 2.0 2.0
25 100 200 2.0 2.0
40 60 120 2.0 5.0
40 100 200 2.0 5.0
40 150 300 2.0 5.0
40 250 500 2.0 5.0
40 400 800 2.0 5.0
100 80 500 10 5.0
120 80 250 10 5.0
120 175 500 10 5.0
40 50 300 150 10
60 50 300 150 10
45 150 700 10 5.0
30 600 1400 10 5.0
25 150 300 10 2.0
25 250 500 10 2.0
3) V(BR)CES/lcEs, as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-8
0.125
0.3
0.3
0.3
0.3
-
0.2
0.2
0.25
0.25
0.25
0.6
0.8
1.0
0.15
0.15
1.0
1.0
0.4
0.2
0.75
0.75
0.75
0.75
0.75
0.75
0.75
p.125
0.125
0.125
0.125
0.125
0.2
0.2
0.2
0.4
0.4
0.2
0.2
0.25
0.25
10
150
150
150
150
250
250
250
250
-
-
-
-
-
10
10
50
50
50
100
100
100
10
10
100
100
10
30
500
500
500
500
500
500
500
10
10
10
10
10
10
10
10
150
150
10
10
50
50
250
300
-
100
100
100
100
100
10
10
90
350
100
135
100
120
135
100
120
90
90
90
90
90
100
100
100
100
100
100
100
140
140
-
-
20
20
20
20
8.0
8.0
8.0
8.0
8.0
8.0
4.0
4.0
6.0
6.0
6.0
12
12
12
6.0
6.0
25
25
1.1
5.0
15
15
15
15
15
15
15
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
15
15
4.0
4.0
-
10
10
-
-
50
50
50
10
10
50
50
8.0
30
50
50
50
50
50
50
50
2.0
2.0
2.0
2.0
2.0
10
10
10
50
50
10
10
10 10 -
-
-
350
350
400
400
-
-
-
-
-
225 6.0
250 5.0
-
-
-
-
-
-
-
-
10
8.0
-
-
-
-
6.0
28
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.5
Process
BAA
DCA
DCA
DCA
DCA
BBC
BBC
FFB
FFB
BBC
BBC
BBC
BBC
BBC
BBC
VXA
VXA
DVA
DVA
DMA
BJB
DAC
DAC
DAC
DAC
DAC
DAC
DAC
FFB
BAA
BAA
BAA
BAA
VAB
VAB
VAB
DSA
DSA
BAA
BAA
BBC
BBC
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
THG6222
THG6224
THG6426
THG6427
THG6428
THG6429
THG6714
DC Current Gain
IT
ICBO
VCE(sa!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (alVCB hFE hFE ((lJlc (aNcE Max. ((IJlc Min. (aJlc COb l
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
100
100
500
500
100
100
2000
60
60
40
40
60
55
40
5.0
5.0
12
12
6.0
6.0
5.0
60
60
40
40
50
45
30
50
50
50
50
10
10
100
NOTES:
1) Maximum at typical JEDEC conditions.
2)
60
60
30
30
30
30
40
75 200 2.0
150 300 2.0
20k 200k 10
10k 100k 10
250 650 0.1
500 1250 0.1
- 1000
50
5.0 0.125 10
5.0 0.125 10
1.2 50
5.0
5.0
1.2 50
5.0
0.2 10
5.0
0.2 10
1.0
150
130
100
100
50
10
10
1.0
1.0
4.0
4.0
7.0
7.0
3.0
3.0
-
-
tls NFl
(ns) (dB)
-
-
10
10
-
-
Process
BAA
BAA
TPM
TPM
BAA
BAA
FBB
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R=10n.
~.
'MPS' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
MPS2712G
MPS2714G
MPS2716G
MPS2923G
MPS2924G
MPS2925G
MPS2926G
MPS3390G
MPS3391G
MPS3392G
MPS3393G
MPS3394G
MPS3395G
MPS3396G
MPS3397G
MPS3398G
MPS3402G
MPS3403G
MPS3404G
DC Current Gain
IT
ICBO
VCE(sa!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. «iNcB hFE hFE «I:l c «,NcE Max. (a)l c Min. @Ic Cob l
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
200
200
200
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
18
18
18
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
50
18
18
18
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) j.1A.
500
500
500
500
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
18
18
18
25
25
25
18
18
18
18
18
18
18
18
18
18
18
18
18
75
75
75
90
150
235
35
400
250
150
90
55
150
90
55
55
75
180
75
225
225
225
180
300
470
470
800
500
300
180
110
500
500
500
800
225
540
225
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
4.5
4.5
4.5
10
10
10
10
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-9
-
-
-
-
-
-
-
-
-
-
-
-
0.3
0.3
0.3
50
50
50
-
-
-
-
-
-
-
-
4.0
-
-
-
-
-
-
-
ts1 NFl
(ns) (dB)
-
-
-
3.5
12
12
12
12
10
10
10
10
10
10
10
10
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Process
BAA
BAA
BAA
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'MPS' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
IT
ICBO
VCE(sa!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @I c @VCE Max. @Ic Min. @Ic COb 1 t1s NF1
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
MPS3405C 500
50
50 5.0
MPS3414C 500
25
25 5.0
MPS3415C 500
25
25 5.0
MPS3416C 500
50
50 5.0
MPS3417C 500
50
50 5.0
MPS3563C 50
30
15 2.0
MPS3565C 200
30
25 6.0
MPS3566C BOO
40
30 5.0
MPS3567C BOO
BO
40 5.0
MPS356BC BOO
BO
60 5.0
MPS3569C BOO
BO
40 5.0
MPS3642C 500
60
45 5.0
MPS3646C 300
40
15 5.0
MPS3693C 100
45
45 4.0
MPS3694C 100
45
45 4.0
MPS3704C 500
50
30 5.0
MPS3705C 500
50
30 5.0
MPS3706C 500
40
20 5.0
MPS3707C 200
30
30 6.0
MPS370BC 200
30
30 6.0
MPS3709C 200
30
30 6.0
MPS3710C 200
30
30 6.0
MPS3711C 200
30
30 6.0
MPS3721C 500 MPS3B26C 200
45 4.0
60
MPS3B27C 200
60
45 4.0
MPS5127C 100
20
12 3.0
MPS5131C 200
20
15 3.0
MPS5132C 200
20
20 3.0
MPS5133C 200
20
1B 3.0
MPS5135C BOO
30
25 4.0
MPS5136C BOO
30
20 3.0
MPS5137C BOO
30
20 3.0
MPS5172C 500
25
25 5.0
MPS5305C 500
25
25
12
MPS5306G 500
25
25
10
MPS6512C 200
40
30 4.0
MPS6513C 200
40
30 4.0
MPS6514C 200
40
25 4.0
MPS6515C 200
40
25 4.0
MPS6520C 200
40
25 4.0
NOTES:
1) Maximum at typical JEDEC conditions.
2)~.
100
100
100
100
100
50
50
50
50
50
50
502
5003
50
50
100
100
100
100
100
100
100
100
500
100
100
50
50
50
50
300
100
100
100
100
100
50
50
50
50
50
1B 1BO 540 2.0 4.5
25 75 225 2.0 4.5
25 1BO 540 2.0 4.5
25 75 225 2.0 4.5
25 1BO 540 2.0 4.5
15 20 200 B.O 10
25 150 600 1.0 10
20 150 600 10 10
40 40 120 150 1.0
40 40 120 150 1.0
40 100 300 150 1.0
50 40 120 150 10
20 30 120 30 0.4
35 40 160 10 10
35 100 400 10 10
20 100 300 50 2.0
20 50 150 50 2.0
20 30 600 50 2.0
20 100 400 0.1 5.0
20 45 660 1.0 5.0
20 45 165 1.0 5.0
20 90 330 1.0 5.0
20 1BO 660 1.0 5.0
1B 60 660 2.0 10
30 40 160 10 10
30 100 400 10 10
10 15 300 2.0 10
10 30 500 10 1.0
10 20 10 10
15 60 1000 1.0 5.0
15 50 600 10 10
20 20 400 150 1.0
20 20 400 150 1.0
25 100 500 10 10
25 2k 20k 2.0 5.0
25 7k 70k 2.0 5.0
30 50 100 2.0 10
30 90 1BO 2.0 10
30 150 300 2.0 10
30 250 500 2.0 10
30 200 400 2.0 10
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 10!l.
3-10
0.3
0.3
0.3
0.3
0.3
50
50
50
50
50
-
-
0.35
1.0
0.25
0.25
0.25
0.22
0.2
1.0
100
150
150
150
150
30
-
-
0.6 100
O.B 100
1.0 100
1.0 10
1.0 10
1.0 10
1.0 10
1.0 10
-
-
-
-
-
-
-
-
-
-
-
4.0
4.0
-
5.0
-
-
10
-
-
-
-
-
-
40
40
40
30
50
50
-
-
-
200
200
0.3
1.0
2.0
10 10 10 200
100
150
150
10
200
200
50
50
50
50
50
-
-
-
-
1.0
0.25
0.25
0.25
1.4
1.4
0.5
0.5
0.5
0.5
0.5
-
-
-
-
-
-
600 B.O 1.7
40 1.0 4.0
40 30 25
60 50 20
60 50 20
60 50 20
250 50 B.O
350 30 5.0 1B
200 10 3.5 200 10 3.5 100 50 12 100 50 12 100 50 12 -
-
-
-
10 3.5
10 3.5
25
35
35
10
60 2.0 10
60 2.0 10
- - 3.5
3.5
3.5
3.5
3.5
-
-
-
-
-
-
-
-
3.0
-
-
Process
BBG
BBG
BBC
BBG
BBC
DMA
BAA
DAC
DAC
DAG
DAC
BBC
BJB
FFB
FFB
BBC
BBC
BBC
BAA
BAA
BAA
BAA
BAA
BBC
BAA
BAA
FFB
BAA
BAA
BAA
DAC
DAC
DAC
BBC
TPM
TPM
BAA
BAA
BAA
BAA
BAA
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'MPS' Device Types
ElECTRICAL CHARACTERISTICS at TA
Device
Type
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. «IVCB hFE hFE «llc ((1 VCE Max. (id c Min. (a!lc COb 1 ts1 NF1
(mA) (V)
(V)
(V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (pF) (ns) (dB)
MPS6521C 200
40
25 4.0
MPS6530C 500
60
40 5.0
MPS6531C 500
60
40 5.0
MPS6532C 500
50
30 5.0
MPS6541C 50
30 3 20 4.0
MPS6560C 1000
25
25 5.0
MPS6561C 1000
25
20 5.0
MPS6564C 200
45 5.0
MPS6565C 200
60
45 4.0
MPS6566C 200
60
45 4.0
MPS6571C 200
20
20 3.0
MPS6573C 200
35
MPS6574C 200
35
MPS6575C 200
45
MPS6576C 200
45
MPS6601C 1000
25
25 4.0
MPS6602C 1000
30
40 4.0
MPS6714C 1000
40
30 5.0
MPS6715C 1000
50
40 5.0
MPS6716C 1000
60
60 5.0
MPS6717C 1000
SO
SO 5.0
MPS6733C 500 200 200 6.0
MPS6734C 500 250 250 6.0
MPS6735C 500 300 300 6.0
MPSS097C 200
60
40 6.0
MPSS09SC SOO
60
60 6.0
MPSS099C SOO
SO
SO 5.0
MPSA05C SOO
60
60 4.0
MPSA06C SOO
SO
SO 4.0
MPSA09C 200
50
50
MPSA10C 200
40 4.0
MPSA12C 500
20 3 10
MPSA13C 500
10
30 3 MPSA14C 500
30 3 10
MPSA1SC 200
45
45 6.5
MPSA20C 200
40
40 4.0
MPSA25C 500
40 3 10
MPSA26C 500
50 3 10
MPSA27C 500
60 3 10
S03 MPSA2SC 500
12
MPSA29C 500 100 3 12
MPSA42C 500 300 300 6.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) [.tA.
= 25°C
50
50
50
100
50
100
100
500
100
100
50
100
100
100
100
100
100
100
100
100
100
100
100
100
30
100
100
100
100
100
100
100
100
100
50
100
100
100
100
100
100
100
30 300 600 2.0 10 0.5 50 3.5 3.0
40 40 120 100 1.0 0.5 100 5.0 40 90 270 100 1.0 0.5 100 5.0 100 1.0 0.5 100 30 30
5.0 - 600 4.0 1.7 15 25 4.0 10 20 50 200 500 1.0 0.5 500 30 20 50 200 350 1.0 0.5 350 30 40 25 10 5.0 0.5 10 4.0 30 40 160 10 10 0.4 10 200 10 3.5 30 100 400 10 10 0.4 10 200 10 3.5 20 250 1000 0.1 5.0 0.5 10 100 0.5 4.5 35 200 500 10 5.0 0.5 10 100 10 12 35 100 300 1.0 5.0 0.5 10 100 10 12 45 200 500 10 5.0 0.5 10 100 10 12 45 100 300 1.0 5.0 0.5 10 100 10 12 25 50 - 500 1.0 0.6 1000 100 50 30 250 25 50 - 500 1.0 0.6 1000 100 50 30 250 40 50 250 1000 1.0 0.5 1000 50 50 30 50 50 250 1000 1.0 0.5 1000 50 50 30 40 50 250 250 1.0 0.5 250 50 200 30 60 50 250 250 1.0 0.5 250 50 200 30 160 40 200 10 10 2.0 20 50 10 4.0 200 40 200 10 10 2.0 20 50 10 4.0 260 40 200 10 10 2.0 20 50 10 4.0 40 250 700 0.1 5.0 4.0 2.0
60 100 300 1.0 5.0 0.3 100 150 10 S.O SO 100 300 1.0 5.0 0.3 100 150 10 S.O 60 50
100 1.0 0.25 100 100 10 SO 50 - 100 1.0 0.25 100 100 10 30 100 600 0.1 5.0 0.9 10 30 0.5 5.0 30 40 400 5.0 10 125 5.0 4.0 15 20k 10 5.0 1.0 10 30 10k - 100 5.0 1.5 100 125 10 30 20k - 100 5.0 1.5 100 125 10 30 500 1500 10 5.0 0.2 10 100 1.0 3.0 1.5
30 40 400 5.0 10 0.25 10 125 5.0 4.0 30 10k - 100 5.0 1.5 100 125 10 40 10k - 100 5.0 1.5 100 125 10 50 10k 100 5.0 1.5 100 125 10 60 10k - 100 5.0 1.2 10 125 10 S.O SO 10k - 100 5.0 1.2 10 125 10 S.O 200 40 30 10 0.5 20 50 10 3.0 3) V(BR)CES/ICEs' as applicable.
4) mAo
5) V(BR)CER at R= iOn.
3-11
Process
BAA
DCA
DCA
DCA
DMA
DSA
DSA
BAA
BAA
BAA
BAA
BAA
BAA
BAA
BAA
DSA
DSA
DSA
DSA
DSA
DSA
BLA
BLA
BLA
BAA
DAC
DAC
DAC
DAC
BAA
VRB
TPM
TPM
TPM
BAA
VRB
TPM
TPM
TPM
JEA
JEA
BLA
II
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
'MPS' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
DC Current Gain
ICBO
Device
Type
Ic
Max.
(mA)
IT
VCE(sat)
~(B~)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @lc @VCE Max. @Ic Min. @Ic Cob 1 ts1 NF1
MPSA43C 500
MPSD01C 500
MPSD02C 600
MPSD03C 600
MPSD04C 500
MPSD05C BOO
MPSD06C 500
MPSl01C 600
MPSU45C 1000
NOTES:
1) Maximum at typical
(V)
(V)
(V)
(nA)
200
200
140
100
25 3
25
25
140
50
200
200
140
100
6.0
4.0
4.0
4.0
10
4.0
4.0
5.0
12
100 160 40
100 BO 25
100 BO 25
100 BO 25
1000 20 2k
1000 20 BO
1000 20 50
1000 75 50
100 30 25k
-
25
25
120
40
(V) Min. Max. (mA)
-
30
10
10
10
100
100
10
10
300
150k 200
-
(V)
(V) (mA) (MHz) (mA) (pF) (ns) (dS)
Process
10
10
10
10
5.0
5.0
5.0
5.0
5.0
0.5
20
-
-
-
-
-
50 10 4.0
40 10 40 10 40 10 100 10 100 50
100 10 60 10 B.O
100 200 6.0
BLA
BlA
VXA
VXA
SOL
DAC
BBC
VXA
BNB
1.0 100
0.5 100
0.3 50
0.2 10
1.5 1000
-
-
-
-
-
-
-
-
-
3) V(BR)cEs/lcEs' as applicable.
4) mAo
5) V(BR)CER at R= 1Of!.
JEDEC conditions.
2) IloA.
'0' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE «Llc (!vVCE Max. @Ic Min. @Ic Cob 1 t1s NF1
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dS)
(rnA) (V)
(V)
D16P1C
500
D33D21C
BOO
D33D22C
BOO
D33D24C
BOO
D33D25C
BOO
D33D26C
BOO
D33D27C
800
D33D29C
BOO
D33D30C
BOO
D40D4C
1000
D40D5C
1000
D40D10C . 1000
D40D11C 1000
NOTES:
1) Maximum at typical
2) IloA.
1B
35 3
35 3
50 3
50 3
503
503
70 3
70 3
60 3
60 3
903
90 3
12
25
25
40
40
40
40
60
60
45
45
75
75
12
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
JEDEC conditions.
100
1003
1003
1003
1003
1003
1003
1003
1003
1003
1003
1003
1003
1B
25
25
25
25
25
25
25
25
60
60
90
90
6K
60
150
60
100
150
250
60
100
50
120
50
120
200
500
120
200
300
500
120
200
150
360
150
360
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
100
100
100
100
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R=10n.
3-12
1.4
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.5
0.5
1.0
1.0
200
500
500
500
500
500
500
500
500
500
500
500
500
60 2.0
100 50
135 50
80 50
120 50
135 50
150 50
80 50
120 50
-
-
-
10
15
15
15
15
15
15
15
15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Process
TPM
DAC
DAC
DAC
DAC
DAC
DAC
DAC
DAC
DID
DID
DID
DID
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
Pro-Electron Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
ICBO
IT
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (alVCB hFE hFE (a)lc (alVCE Max. (Wlc Min. @Ic Cob 1 ts1 NF1
(mA) (V)
(V)
(V) (nA) (V) Min. Max. (mA) (V) (V) (mA) (MHz) (mA) (pF) (ns) (dB)
THBG107
500
THBG107A 500
THBG107B 500
THBG108
500
THBG108A 500
THBG108B 500
THBG108G 500
THBG109
500
THBG109B 500
THBG109G 500
THBG167
500
THBG167A 500
THBG167B 500
THBG168
500
THBG168A 500
THBG168B 500
THBG168G 500
THBG169
500
THBG169B 500
THBG169G 500
THBG182
500
THBG182A 500
THBG182B 500
THBG183
500
THBG183A 500
THBG183B 500
THBG183G 500
THBG184
500
THBG184B 500
THBG184G 500
THBG237
500
THBG237A 500
THBG237B 500
THBG238
500
THBG238A 500
THBG238B 500
THBG238G 500
THBG239
500
THBG239B 500
THBG239G 500
THBG317
500
THBG317A 500
NOTES:
1) Maximum at typical
2) fLA
50 3
50 3
50 3
30 3
30 3
30 3
30 3
30 3
30 3
30 3
50 3
50 3
50 3
30 3
30 3
30 3
30 3
30 3
30 3
30 3
60
60
60
45
45
45
45
45
45
45
50 3
50 3
50 3
30 3
30 3
30 3
30 3
30 3
30 3
30 3
50
50
45
45
45
20
20
20
20
20
20
20
45
45
45
20
20
20
20
20
20
20
50
50
50
30
30
30
30
30
30
30
45
45
45
20
20
20
20
20
20
20
45
45
6.0
6.0
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
5.0
5.0
5.0
6.0
6.0
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6.0
6.0
JEDEC conditions.
153
153
153
15 3
153
153
15 3
153
15 3
153
153
15 3
153
15 3
15 3
153
15 3
15 3
153
15 3
15
15
15
15
15
15
15
15
15
15
15 3
153
153
153
153
153
153
15 3
153
153
30
30
50
50
50
30
30
30
30
30
30
30
50
50
50
30
30
30
30
30
30
30
50
50
50
30
30
30
30
30
30
30
50
50
50
30
30
30
30
30
30
30
20
20
120
120
180
120
120
180
380
180
180
380
120
120
180
120
120
180
380
180
180
380
120
120
180
120
120
180
380
240
240
450
120
120
180
120
120
180
380
180
180
380
110
110
800
220
460
800
220
460
800
800
460
800
800
220
460
800
220
460
800
800
460
800
800
220
460
800
220
460
800
900
500
900
460
220
460
800
220
460
800
800
460
800
450
220
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
3) V(BR)CES/1cES' as applicable.
4) mAo
5) V(BR)CER at R= 10n.
3-13
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
100
100
100
100
100
100
100
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
85
150
150
150
150
150
150
150
150
150
150
85
85
85
85
85
85
85
85
85
85
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
10
10
10
10
10
10
10
10
10
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
-
-
-
-
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
-
10
10
10
10
10
10
-
-
-
4.0
4.0
4.0
10
10
10
10
10
10
10
4.0
4.0
4.0
10
10
10
10
10
10
10
4.0
4.0
4.0
10
10
10
10
10
10
10
4.0
4.0
4.0
6.0
6.0
-
-
-
-
-
-
-
Process
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
II
BIPOLAR TRANSISTOR CHIPS
NPN Transistors
Pro-Electron Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
ICBO
DC Current Gain
IT
VCE(sat)
Ic
Device
Type
THBG317B
THBG318
THBG318A
THBG318B
THBG318G
THBG319
THBG319B
THBG319G
THBG337
THBG33716
THBG33725
THBG338
THBG33816
THBG33825
THBG368
THBG413
THBG413B
THBG413G
THBG414
THBG414B
THBG414G
THBG485
THBG485A
THBG485B
THBG517
THBG546
THBG546A
THBG546B
THBG547
THBG547A
THBG547B
THBG548
THBG548A
THBG548B
THBG635
THBG637
THBG639
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (jvVCB hFE hFE Co Ic (j/,VCE Max. (jvlc Min. @Ic Cob l
(rnA)
(nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
(V)
(V)
(V)
500 50
500 30
500 30
500 30
500 30
500 30
500 30
500 30
1000 50 3
1000 503
1000 503
1000 303
1000 303
1000 30 3
1000 25
200 45
200 45
200 45
200 50
200 50
200 50
800 45
800 45
800 45
500 40
500 80
500 80
500 80
500 50
500 50
500 50
500 30
500 30
500 30
800 45 3
800 60 3
800 1003
45
20
20
20
20
20
20
20
45
45
45
25
25
25
20
30
30
30
45
45
45
45
45
45
30
65
65
65
45
45
45
30
30
30
45
60
80
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10
6.0
6.0
6.0
6.0
6.0
6.0
5.0
5.0
5.0
5.0
5.0
5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) f1A.
30
30
30
30
30
30
30
30
1003
1003
1003
1003
1003
1003
102
15
15
15
15
15
15
100
100
100
100
15
15
15
15
15
15
15
15
15
100
100
100
20
20
20
20
20
20
20
20
45
45
45
25
25
25
25
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
200
110
110
200
450
200
200
420
100
100
160
100
100
160
85
180
180
380
180
180
380
60
100
160
30k
110
110
200
110
110
200
110
110
200
40
40
40
450
800
220
450
800
800
450
800
630
250
400
630
250
400
375
800
460
800
800
460
800
400
250
400
-
800
220
450
800
220
450
800
220
450
250
160
160
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
100
100
100
100
100
100
500
2.0
2.0
2.0
2.0
2.0
2.0
100
100
100
20
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
150
150
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
2.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
3) V(BR)CES/ICEs, as applicable.
4) rnA.
5) V(BR)CER at R=100.
3-14
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.7
0.7
0.7
0.7
0.7
0.7
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.5
0.5
0.5
1.0
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.5
0.5
0.5
10
10
10
10
10
10
10
10
500
500
500
500
500
500
100
10
10
10
10
10
10
500
500
500
100
10
10
10
10
10
10
10
10
10
500
500
500
-
-
-
100
100
100
100
100
100
65
250
250
250
250
250
250
-
220
300
300
300
300
300
300
300
300
300
130
130
130
-
-
10
10
10
10
10
10
10
10
10
10
10
10
10
-
10
10
10
10
10
10
10
10
10
10
10
10
10
tl
s
(ns)
7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 12 12 12 12 12 12 -
-
4.0 4.0 4.0 4.0 4.0 4.0 10 10 10 -
-
7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 -
-
-
NFl
(dB)
6.0
6.0
6.0
6.0
6.0
4.0
4.0
4.0
-
2.5
2.5
2.5
2.5
2.5
2.5
-
10
10
10
10
10
10
10
10
10
-
Process
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
DID
DID
DID
DID
DID
DID
DID
BAA
BAA
BAA
BAA
BAA
BAA
DAG
DAG
DAG
TPM
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
BBG
DAG
DAG
DAG
BIPOLAR TRANSISTOR CHIPS
N PN Transistors
Power Devices
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
THC2908
THC5069
THC5190
THC5191
THC5192
THC6037
THC6038
THC6039
THC6315
THC6316
DC Current Gain
IT
ICBO
VCE(sat)
Ie
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (/ VCB hFE
hFE (/Ic (/VCE Max. (a Ic Min. (a Ic COb 1
(mA)
(V)
(V)
(V)
(nA) (V) Min. Max. (mA) (V)
(V) (mA) (MHz) (mA) (pF)
5000
5000
4000
4000
4000
4000
4000
4000
7000
7000
80
80
40
60
80
40
60
80
60
80
80
80
40
60
80
40
60
80
60
80
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
-
-
1.04
100
100
100
0.5 4
0.5 4
0.5 4
0.3 4
0.3 4
NOTES:
1) Maximum at typical JEDEC conditions.
2) "..A.
80
40
60
80
40
60
80
60
80
12
20
25
25
20
750
750
750
20
20
80
100
100
80
15k
15k
15k
100
100
1000
1000
1500
1500
1500
2000
2000
2000
2500
2500
10
2.0
2.0
2.0
2.0
3.0
3.0
3.0
4.0
4.0
-
0.4
0.6
0.6
0.6
2.0
2.0
2.0
1.0
1.0
1000
1500
1500
1500
2000
2000
2000
4000
4000
1.0
4.0
2.0
2.0
2.0
25
25
25
4.0
4.0
1000
1000
1000
1000
1000
750
750
750
250
250
-
t sI
(ns)
NFl
(dB)
-
-
-
-
t sI
(ns)
NFl
(dB)
-
4.0
3.0
-
100
100
100
200 1000 200 1000 -
Process
FBB
FBB
FCB
FCB
FCB
YFA
YFA
YFA
FBB
FBB
3) V(BR)CES/ICEs' as applicable.
4) mAo
5) V(BR)CER at R= 1011.
PNP Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
THC2604
THC2605
THC2696
THC2904
THC2904A
THC2905
THC2905A
THC2906
THC2906A
THC2907
THC2907A
THC2944
THC2945
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (aVCB hFE hFE (a Ic (a VCE Max. (a Ic Min. (a IC COb I
(mA)
(V)
(V)
(V)
(nA) (V) Min. Max. (mA) (V)
(V) (mA) (MHz) (mA) (pF)
100
100
500
500
500
500
500
500
500
500
500
50
50
60
60
25
60
60
60
60
60
60
60
60
15
25
45
45
25
40
60
40
60
40
60
40
60
10
20
6.0
6.0
-
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
15
25
NOTES:
1) Maximum at typical JEDEC conditions.
2) "..A.
10
10
25
20
10
20
10
20
10
20
10
100
200
45
45
10
50
50
50
50
50
50
50
50
15
25
40
100
30
40
40
100
100
40
40
100
100
80
40
120
300
130
120
120
300
300
120
120
300
300
-
-
0.01
0.01
50
150
150
150
150
150
150
150
150
1.0
1.0
5.0 0.5 10 30 0.5
5.0 0.5 10 30 0.5
1.0 0.25 50 100 50
10 0.4 150 200 50
10 0.4 150 200 50
10 0.4 150 200 50
10 0.4 150 200 50
10 0.4 150 200 50
10 0.4 150 200 50
10 0.4 150 200 50
10 0.4 150 200 50
0.5 10 1.0
0.5 5.0 1.0
3) V(BR)cEs/lcEs' as applicable.
4) mAo
5) V(BR)CER at R= 1011.
3-15
6.0
6.0
20
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
10
10
-
100
100
100
100
100
100
100
100
-
-
-
-
25
25
Process
BXE
BCA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
SHF
SHF
II
BIPOLAR TRANSISTOR CHIPS
PN P Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. ~(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @I c @VCE Max. @Ic Min. @Ic Cob 1 11
s NF1
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
(rnA) (V)
THC2946
50 40
35
40 500 40 30 1.0 0.5 - THC3072
500 60
60 4.0
10 30 30 130 50 1.0 0.25 50
THC3073
500 60
60 4.0
10 30 30 130 50 1.0 0.25 50
THC312D
500 45
45 4.0
10 30 30 130 50 1.0 0.25 50
THC3121
10 30 30 130 50 1.0 0.25 50
45 4.0
500 45
THC3133
500 50
35 4.0
50 30 40 120 150 10 0.6 150
THC3134
500 50
35 4.0
50 30 100 300 150 10 0.6 150
THC3135
500 50
35 4.0
50 30 40 120 150 10 0.6 150
THC3136
500 50
35 4.0
50 30 100 300 150 10 0.6 150
THC3250
200 50
40 5.0 - 50 150 10 1.0 0.25 10
- 100 300 10 1.0 0.25 10
THC3251
200 50
40 5.0 THC3502
500 45
10 30 100 300 150 10 0.25 50
45 5.0
THC3503
500 60
60 5.0
10 50 100 300 150 10 0.25 50
THC3504
45 5.0
10 30 100 300 150 10 0.25 50
500 45
10 50 100 300 150 10 0.25 50
THC3505
500 60
60 5.0
THC3547
100 60
60 6.0
25 45 100 500 1.0 5.0 1.0 10
THC3548
100 60
45 6.0
10 45 100 300 0.01 5.0 1.0 10
THC3549
100 60
60 6.0
10 45 100 500 0.01 5.0 1.0 10
THC3550
100 60
45 8.0 5.0 45 200 600 0.01 5.0 0.5 5.0
THC3634 1000 140 140 5.0 100 100 50 150 50 10 0.3 10
THC3635 1000 140 140 5.0 100 100 100 300 50 10 0.3 10
THC3638
25 4.0
500 25
35 15 20 50 1.0 0.25 50
THC3638A 500 25
25 15 100 25 4.0
50 1.0 0.25 50
THC3644
45 5.0
500 45
35 30 100 300 50 10 0.25 50
THC3702
25 5.0 100 20 60 300 50 0.5 0.25 50
500 40
THC3703
30 5.0 100 20 30 150 50 5.0 0.25 50
500 50
THC3743
100 300 300 5.0 300 200 25 250 30 10 - THC3798
100 60
60 5.0
10 50 150 450 0.5 5.0 0.25 1.0
THC3798A 100 90
10 50 150 450 0.5 5.0 0.25 1.0
90 5.0
THC3799
100 60
10 50 300 900 0.5 5.0 0.25 1.0
60 5.0
THC3799A 100 90
90 5.0
10 50 300 900 0.5 5.0 0.25 1.0
THC3905
200 40
40 5.0 50 150 10 1.0 0.25 10
THC3906
200 40
40 5.0 - 100 300 10 1.0 0.25 10
THC3962
100 60
10 50 100 450 1.0 5.0 0.25 10
60 6.0
THC3963
100 80
10 70 100 450 1.0 5.0 0.25 10
80 6.0
THC3964
100 45
45 6.0
10 40 250 600 1.0 5.0 0.25 10
THC3965
100 60
60. 6.0
10 50 250 600 1.0 5.0 0.25 10
THC4030 1000 60
60 5.0
50 50 40 120 100 5.0 0.15 150
THC4031 1000 80
80 5.0
50 60 40 120 100 5.0 0.15 150
THC4032 1000 60
60 5.0
50 50 100 300 100 5.0 0.15 150
THC4033 1000 80
80 5.0
50 60 100 300 100 5.0 0.15 150
THC4036 1000 90
65 7.0
20 60 40 140 150 10 0.6 150
NOTES:
3) V(BR)CES/lcEs' as applicable.
1) Maximum at typical JEDEC conditions.
4) rnA.
2) fIJ\.
5) V(BR)CER at R= 100.
3-16
3.0
130
130
130
130
200
200
200
200
250
300
200
200
200
200
45
60
60
60
150
200
100
150
200
100
100
25
100
100
100
100
200
250
40
40
50
50
100
100
150
150
60
1.0
50
50
50
50
50
50
50
50
10
20
50
50
50
50
1.0
1.0
1.0
1.0
30
30
50
50
20
50
50
30
1.0
1.0
1.0
1.0
10
10
0.5
0.5
0.5
0.5
50
50
50
50
50
10
10
10
10
10
10
10
10
10
6.0
6.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
10
10
20
10
8.0
12
12
15
4.0
4.0
4.0
4.0
4.5
4.5
6.0
6.0
6.0
6.0
20
20
20
20
30
-
25
100
100
100
100
150
150
150
157
225
250
100
100
100
100
-
-
-
-
6.0
6.0
4.0
4.0
4.0
4.0
5.0
- 4.0
- 4.0
- 4.0
600 3.0
600 3.0
170 170 100 -
-
-
3.5
- 3.5
- 2.5
- 2.5
260 5.0
300 4.0
3.0
3.0
- 2.0
- 2.0
400 400 400 400 700 -
Process
SHF
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BTB
BTB
BOA
BOA
BOA
BOA
BXE
BXE
BXE
BXE
AKA
AKA
BOA
BOA
BOA
BOA
BOA
BMA
STL
STL
STL
STL
BTB
BTB
BXE
BXE
BXE
BXE
DJC
DJC
DJC
DJC
DJC
BIPOLAR TRANSISTOR CHIPS
PN P Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
THC4037
THC4058
THC4059
THC4060
THC4061
THC4062
THC4121
THC4122
THC4125
THC4126
THC4142
THC4143
THC4248
THC4249
THC4250
THC4250A
THC4288
THC4289
THC4290
THC4291
THC4314
THC4354
THC4355
THC4356
THC4402
THC4403
THC4413
THC4415
THC4916
THC4917
THC4964
THC4965
THC4971
THC4972
THC5086
THC5087
THC5138
THC5139
THC5142
THC5221
THC5226
THC5227
DC Current Gain
fT
ICBO
VCE(s.t)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (wVCB hFE hFE (id c (wVCE Max. (wlc Min. (ivi c CObl
(rnA)
(V)
(V)
(V)
(nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
1000
100
100
500
100
100
200
200
100
100
200
200
100
100
100
100
100
100
500
500
1000
1000
1000
1000
500
500
500
500
200
200
100
100
500
500
100
100
100
200
500
500
500
100
60
30
30
30
30
30
40
40
30
25
60
60
40
60
40
60
30
60
30
40
90
60
60
80
40
40
40
40
30
30
-
50
60
60
50
50
30
20
20
15
25
30
40
30
30
30
30
30
40
40
30
25
40
40
40
60
40
60
25
45
20
30
65
60
60
80
40
40
30
20
30
30
40
50
40
40
50
50
30
20
20
15
25
30
7.0
6.0
6.0
6.0
6.0
6.0
5.0
5.0
4.0
4.0
5.0
5.0
5.0
5.0
5.0
5.0
6.0
7.0
5.0
6.0
-
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
4.0
-
5.0
5.0
-
5.0
5.0
4.0
3.0
4.0
3.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) ,...A.
250
100
100
100
100
100
25 3
25 3
50
50
-
10
10
10
10
50
10
500
200
250
50
50
50
-
10
10
25 3
25 3
100
50
20
20
50
50
50
50 3
503
100
300
100
60
20
20
20
20
20
30
30
20
20
-
-
40
40
40
50
25
45
20
30
60
50
50
50
-
30
30
15
15
30
35
50
50
35
35
20
15
12
10
15
10
50
100
45
45
90
180
70
150
50
120
40
100
50
100
250
250
150
150
50
100
50
50
100
50
50
100
120
100
70
150
40
150
40
100
150
250
50
30
30
30
30
50
250
400
660
165
330
660
200
300
150
360
120
300
-
300
700
700
600
600
300
300
250
500
400
250
150
300
-
200
300
400
300
120
300
500
800
800
-
600
600
700
150
0.1
1.0
1.0
1.0
1.0
10
10
2.0
2.0
150
150
0.1
0.1
0.1
0.1
1.0
1.0
100
100
150
10
10
10
150
150
1.0
1.0
10
10
5.0
0.1
150
150
0.1
0.1
0.1
0.1
50
50
50
2.0
10
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
10
10
5.0
5.0
5.0
5.0
5.0
5.0
10
10
10
10
10
10
2.0
2.0
5.0
5.0
1.0
1.0
10
5.0
10
10
5.0
5.0
10
10
1.0
10
10
10
3) V(BR)cES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-17
1.4
0.7
0.7
0.7
0.7
0.7
0.14
0.14
0.4
0.4
0.4
0.4
0.25
0.25
0.25
0.25
0.35
0.35
0.4
0.4
1.4
0.15
0.15
0.15
0.4
0.4
0.2
0.2
0.14
0.14
0.25
0.3
0.4
0.4
0.3
0.3
0.3
0.2
0.5
0.5
0.8
0.4
150
10
10
10
10
10
10
10
50
50
150
150
10
10
10
10
1.0
1.0
100
100
150
150
150
150
150
150
1.0
1.0
10
10
10
10
150
150
10
10
10
10
50
150
100
10
60
-
400
450
200
250
200
200
-
-
40
40
100
100
60
100
100
100
150
200
20
20
400
450
125
40
200
200
40
40
30
300
100
100
50
100
50 30
-
-
-
-
-
10
10
10
10
50
50
-
1.0
1.0
10
10
50
50
50
50
20
20
-
10
10
5.0
0.5
50
50
0.5
0.5
0.5
10
50
20
20
10
4.5
4.5
4.5
4.5
8.0
8.0
6.0
6.0
6.0
6.0
8.0
8.0
10
10
30
30
30
30
10
10
8.0
8.0
4.5
4.5
4.0
4.0
8.0
8.0
4.0
4.0
7.0
5.0
10
15
20
5.0
ts1
(ns)
NFl
(dB)
-
5.0
-
-
-
-
-
-
-
-
-
150 4.0
150 4.0
5.0
- 4.0
100 100 -
-
-
-
3.0
2.0
2.0
-
-
400
400
400
225
225
-
-
-
4.0
-
3.0
3.0
3.0
-
-
-
150 4.0
150 4.0
-
-
3.0
100 100 - 3.0
- 2.0
-
-
200 200 -
-
Process
OJC
BXE
BXE
BOA
BXE
BXE
BTB
BTB
BXE
BXE
BTB
BTB
BXE
BXE
BXE
BXE
BXE
BXE
BOA
BOA
OJC
OJC
OJC
OJC
OOA
OOA
BOA
BOA
BTB
BTB
BXE
BXE
BOA
BOA
BXE
BXE
BXE
BTB
BOA
BOA
BOA
BXE
I
BIPOLAR TRANSISTOR CHIPS
PNP Transistors
'TH' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Cu rrent Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. «uVCB hFE' hFE «t Ic «LVCE Max. «d c Min. «tic Cob l ts1 NFl
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
(rnA) (V)
THC5354
25
500 25
4.0
THC5355
25
4.0
500 25
THC5356
25
4.0
500 25
THC5365
40
4.0
500 40
THC5366
40
4.0
500 40
THC5367
500 40
40
4.0
THC5372
30
500 60
5.0
THC5373
30
5.0
500 60
THC5374
30
5.0
500 60
THC5375
500 40
30
5.0
THC5378
30
5.0
500 40
THC5379
500 40
30
5.0
THC5382
40
200 40
5.0
THC5383
200 40
5.0
40
THC5400
500 130 120 5.0
THC5401
500 160 150 5.0
THC5447
500 40
25
5.0
THC5448
500 50
30
5.0
THC5811
25
800 35
5.0
THC5813
25
800 35
5.0
THC5815
40
800 50
5.0
THC5817
40
800 50
5.0
THC5819
800 50
40
5.0
THC5821
800 70
60
5.0
THC5823
800 70
60
5.0
THC5855 1000 60
60
5.0
THC5857 1000 80
80
5.0
THC5999
25
5.0
500 35
THC6009
500 35
25
5.0
THC6076
25
500 25
5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) 1lA.
100
100
100
100
100
100
50
50
50
50
10
10
50
50
50
50
100
100
100
100
100
100
100
100
100
100
100
30
30
100
25 40 120 50 1.0
25 100 300 50 1.0
25 250 500 50 1.0
40 40 120 50 1.0
40 100 300 50 1.0
40 250 500 50 1.0
40 40 120 150 10
40 100 300 150 10
40 200 400 150 10
30 40 400 150 10
30 120 - 1.0 5.0
30 100 500 0.1 5.0
30 50 10 1.0
30 100 300 10 1.0
100 40 180 10 5.0
120 60 240 10 5.0
20 60 300 50 5.0
20 30 150 50 5.0
25 60 200 2.0 2.0
25 150 500 2.0 2.0
25 60 120 2.0 2.0
25 100 200 2.0 2.0
25 150 300 2.0 2.0
25 60 120 2.0 2.0
25 100 200 2.0 2.0
40 50 300 150 10
60 50 300 150 10
25 150 300 10 2.0
25 250 500 10 2.0
25 100 500 10 10
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-18
0.25
0.25
0.25
0.25
0.25
0.25
0.3
0.3
0.3
0.3
0.2
0.25
0.25
0.2
0.2
0.25
0.25
0.75
0.75
0.75
0.75
0.75
0.75
0.75
0.4
0.4
0.25
0.25
0.25
50
50
50
50
50
50
150
150
150
150
-
10
10
10
10
10
50
50
500
500
500
500
500
500
500
150
150
50
50
10
250
250
250
250
250
250
150
150
150
150
2.0
2.0
2.0
2.0
2.0
2.0
20
20
20
20
-
-
8.0
8.0
8.0
8.0
8.0
8.0
10
10
10
10
10
200 0.5 200 10 4.5
250 10 4.5
100 10 6.0
100 10 6.0
100 50 12
100 50 12
100 50 15
135 50 15
100 50 15
120 50 15
135 50 15
100 50 15
120 50 15
100 50 15
100 50 15
140 10 140 10 - 13
-
-
-
-
-
-
-
150
150
175
175
-
-
-
-
-
-
-
-
-
-
3.0
5.0
4.0
8.0
8.0
-
-
1.5
1.5
-
Process
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BOA
BTB
BTB
BCA
BCA
BOA
BOA
BFA
BFA
BFA
OFA
OFA
BFA
BFA
OJC
OJC
BOA
BOA
BOA
BIPOLAR TRANSISTOR CHIPS
PNP Transistors
'MPS' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
IT
ICBO
VCE(sa!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (pVCB hFE hFE «Ilc ((IVCE Max. «llc Min. (itlc Cob 1 ts1 NF1
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
MPS404C
150 25
24
12
MPS404AC 150 40
35
25
MPS363BC 500 25
25
4.0
MPS363BAC 500 25
25
4.0
MPS3702C 500 40
25
5.0
MPS3703C 500 50
30
5.0
MPS424BC 100 40
40
5.0
MPS4249C 100 60
60
5.0
MPS4250C 100 40
40
5.0
MPS4250AC 100 60
5.0
60
MPS4354C 1000 60
60
5.0
MPS4355C 1000 60
5.0
60
MPS4356C 1000 BO
5.0
BO
MPS513BC 100 30
5.0
30
MPS5139C 100 20
5.0
20
MPS6516C 100 40
40
4.0
MPS6517C 100 40
40
4.0
MPS651BC 100 40
40
4.0
MPS6519C 100 25
4.0
25
MPS6522C 100 25
25
4.0
MPS6523C 100 25
25
4.0
MPS6533C 500 40
40
4.0
MPS6534C 500 40
40
4.0
MPS6535C 500 30
30
4.0
MPS6562C 500 25
25
5.0
MPS6563C 1000 25
25
5.0
MPS6651C 1000 25
25
4.0
MPS6652C 1000 40
40
4.0
MPS672BC 500 60
60
5.0
MPS6729C 500 BO
5.0
BO
MPSB093C 200 40
40
5.0
MPS8598C BOO 60
60
6.0
MPSB599C BOO BO
BO
5.0
MPSA55C
BOO 60
60
4.0
MPSA56C
BOO BO
BO
4.0
MPSA62C
500 20
20
10
MPSA63C
500 30
30
10
MPSA64C
500 30
10
30
MPSA70C
100 40
4.0
MPSA75C
500 40 3
10
MPSA76C
500 50 3
10
MPSA77C
500 60 3
10
NOTES:
1) Maximum at typical JEDEC conditions.
2) fLA.
100
100
35
35
100
100
10
10
10
10
50
50
50
50
50 3
50
50
50
50
50
50
50
50
50
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
10
15
15
20
20
40
40
50
40
50
50
50
20
15
30
30
30
20
30
20
30
30
30
20
20
25
30
40
60
20
60
BO
60
BO
15
30
30
30
30
40
50
30
30
30
100
60
30
50
100
250
250
50
100
50
50
40
50
90
150
250
200
300
40
90
30
50
50
50
50
50
50
100
100
100
50
50
5k
10k
20k
40
10k
10k
10k
400
400
12 0.15 0.15 12 4.0 1.0
12 0.15 0.15 12 4.0 1.0
50 1.0 0.25 50 100 50
50 1.0 0.25 50 150 50
300 50 5.0 0.25 50 100 50
150 50 5.0 0.25 50 100 50
0.1 5.0 0.25 10 40 0.5
300 0.1 5.0 0.25 10 40 0.5
700 0.1 5.0 0.25 10 40 0.5
700 0.1 5.0 0.25 10 40 0.5
500
10 10 0.15 150 100 50
400
10 10 0.15 150 100 50
250
10 10 0.15 150 100 50
BOO 0.1 10 0.3 10 30 0.5
1.0 10 0.15 1.0 300 10
100 2.0
10 0.5 50 1BO 2.0 10 0.5 50 300 2.0
10 0.5 50 500 2.0
10 0.5 50 10 0.5 50 600 2.0
2.0
10 0.5 50 120 100 1.0 0.5 100 270 100 1.0 0.5 100 100 1.0 0.5 100 500 500 1.0 0.5 500 60 10
200 350 1.0 0.5 350 60 10
500 1.0 0.6 1000 100 50
500 1.0 0.6 1000 100 50
250 250 1.0 0.5 250 50 200
250 250 1.0 0.5 250 50 200
300 50 2.0 0.25 50 300 1.0 5.0 0.3 100 150 10
300 1.0 5.0 0.3 100 150 10
100 1.0 0.25 100 50 100
100 1.0 0.25 100 50 100
10 5.0 1.0 10 125 100
10 5.0 2.0 100 125 100
10 5.0 2.0 100 125 100
100 5.0
10 0.25 10 125 5.0
10 5.0 1.5 100 125 10
10 5.0 1.5 100 125 10
10 5.0 1.5 100 125 10
3) V(BR)CES/lcEs> as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-19
20
20
20
10
12
12
6.0
6.0
6.0
6.0
30
30
30
7.0
5.0
3.5
3.5
3.5
4.0
3.5
3.5
5.0
5.0
7.0
30
30
30
30
30
30
140
140
-
-
-
2.0
3.0
2.0
2.0
3.0
3.0
3.0
200
-
250
250
-
- B.O B.O -
-
-
-
-
-
4.0
-
-
-
-
-
3.0
3.0
-
-
-
-
-
-
-
Process
SHF
SHF
BOA
BOA
BOA
BOA
BXE
BXE
BXE
BXE
OJC
OJC
OJC
BXE
BTB
BTB
BXE
BXE
BXE
BXE
BXE
OOA
OOA
OOA
OJC
OJC
OJC
OJC
BFA
BFA
BOA
BFA
BFA
BFA
BFA
SRB
SRB
SRB
BXE
BOB
BOB
BOB
BIPOLAR TRANSISTOR CHIPS
PNP Transistors
'MPS' Device Types
ELECTRICAL CHARACTERISTICS at TA
Device
Type
= 25°C
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @I c @VCE Max. @Ic Min. @Ic COb1 t1
s
(rnA)
(V)
(nA) (V) Min. Max. (rnA) (V)
(V)
(V) (rnA) (MHz) (rnA) (pF) (ns)
(V)
MPSA92C 500
MPSA93C 500
MPSD51C 500
MPSD52C 300
MPSD53C 300
MPSD54C 500
MPSD55C BOO
MPSD56C BOO
MPSHB1C
MPSL51C 300
MPSU95C 1000
300
200
200
140
100
25
25
25
20
100
50
300
200
200
140
100
25 3
25
25
20
100
40
5.0
5.0
4.0
4.0
4.0
10
-
4.0
3.0
4.0
10
250
250
100
100
100
000
000
000
100
000
100
NOTES:
1) Maximum at typical JEDEC conditions.
2) ~.
200 25 30
160 25 30
BO 25 10
10
BO 25 10
BO 25 20
2k 100
20 BO - 100
20 50 10
10 60 5.0
50 40 250 50
200 25k 150k 200
10
10
10
10
10
5.0
5.0
5.0
10
5.0
5.0
0.5
0.5
-
20
20
-
1.0 100
0.5 100
0.3 50
0.5 5.0
0.25 10
1.51000
50 10 6.0 50 10 B.O 40 10 - 40 10 40 10 100 10 100 50 100 10 600 5.0 0.B5 60 10 B.O 50 200 12 -
NF1
(dB)
-
-
-
-
Process
BMA
BMA
BMA
VHB
VHB
SRB
BFA
BFA
JYA
VHB
BOB
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R=100.
'D' Device Types
ELECTRICAL CHARACTERISTICS at TA
Device
Type
D29A4C
D29A5C
D29E1C
D29E2C
D29E4C
D29E5C
D29E6C
D29E7C
D29E9C
D29E10C
D41D4C
D41D5C
D41D10C
D41D11C
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @Ic (fciNcE Max.
2.5
3.0
3.5
4.0
3.0
3.0
3.0
-
-
15
15
15
15
15
15
15
4.5
4.5
4.5
-
6.5
6.5
6.5
-
-
-
15
15
15
-
-
-
-
-
-
-
-
0.5
1.0
1.5
4.0
6.0
7.0
1.0
1.5
2.5
4.5
4.5
4.5
4.5
3.0
B.O
10
B.O
-
-
-
(V)
-
-
-
12
12
12
3.5
4.0
5.0
9.0
9.0
9.0
7.5
-
-
-
-
-
2.0
2.0
2.0
7.0
7.0
7.0
-
-
-
-
20
20
20
15
15
15
20
20
20
105
105
105
15
15
10'
10'
10'
-
-
10
10
10
Max
(pF)
4.5
4.5
4.5
4.5
(II
Vos
(V)
Max.
(pF)
1.2
1.2
1.2
1.2
-
15
15
15
15
-
-
-
-
4.5
4.5
4.5
50
50
50
50
50
50
16
16
16
16
16
16
4.0
4.0
6.0
-
15
15
15
-10'
-10'
-10 3
-10'
-10 3
-10'
15
15
15
15
15
15
20
20
20
-
-
-
-
-
--
-
5.5
5.5
5.5
105
105
105
-
-
7.5
7.5
7.5
50
50
7.5
7.5
7.5
B.O
B.O
B.O
-10 3
-10 3
-103
-103
-103
-10 3
-10 3
-10 3
156
156
156
1.2
1.2
1.2
25
25
25
25
25
25
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.2
-
1.7
1.7
1.7
,3.5
3.5
3.5
25
25
3.5
3.5
3.5
3.0
3.0
3.0
(II
Vas
(V)
15
15
15
15
-
Max.
Pro-
(0)
cess
-
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ26
NJ132
NJ132
NJ132
NJ26
NJ26
NJ26
NJ903
NJ903
NJ903
NJ903
NJ903
NJ903
NJ132
NJ132
NJ99
NJ99
NJ99
NJ99
NJ16
NJ16
NJ32
NJ26L
NJ26L
NJ26L
NJ16
NJ16
NJ16
NJ26L
NJ26L
NJ26L
NJ26
NJ26
NJ99
NJ99
NJ99
NJ903
NJ903
NJ99
NJ99
NJ99
NJ35D
NJ35D
NJ35D
-
-
-
-
-
65
50
35
15
15
15
-10'
-10 3
-10'
-10 3
-10'
-103
-10'
-10'
-103
-10 3
-10'
-103
20
20
20
-
3.0
6.0
B.O
B.O
12
lB
30
30
50
50
100
BO
-
-
-
-
-
-
-
105
105
105
-
-10 3
-10 3
-10 3
-10 3
-103
-103
-103
-10'
156
156
156
-
-
3.0
7.0
-
-
-
JUNCTION FIELD-EFFECT TRANSISTOR CHIPS
N-Channel JFETs
ELECTRICAL CHARACTERISTICS at TA = 25°C
VGS(Off)
V(BR)GSS
Min.
(V)
Oevice
Type
THJU404
THJU405
THJU406
THJU1897
THJU1898
THJU1899
(wiG
(IL A)
Limits
IGSS
Max.
(nA)
(wV GS
(V)
-50 -1.0 -0.025 -30
-50 -1.0 -0.025 -30
-50 -1.0 -0.025 -30
-40 -1.0 -0.4 -20
-40 -1.0 -0.4 -20
-40 -1.0 -0.4 -20
Conditions
loss
Min.
(V)
Max.
(V)
VDS
(V)
ID
(nA)
Min.
(mA)
-0.5
-0.5
-0.5
-5.0
-2.0
-1.0
-2.5
-2.5
-2.5
-10
-7.0
-5.0
15
15
15
20
20
20
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
30
15
8.0
CISS '
g"
Max.
(mA)
«iV as
10
10
10
10
10
10
20
20
20
2.0
2.0
2.0
7.0
7.0
7.0
10
10
10
-
-
-
-
-
-
Min.
Max.
-
-
(V)
Min. Max.
(mS) (mS)
(ll
Vos
(V)
GRSS '
Max.
(pF)
(aVos
(V)
Max.
(pF)
((iVOS
rDs
Max.
(V)
(0)
8.0
8.0
8.0
16
16
16
156
156
156
20
20
20
3.0
3.0
3.0
3.5
3.5
3.5
156
156
156
20
20
20
-
30
50
20
Process
NJ35D
NJ35D
NJ35D
NJ132
NJ132
NJ132
NOTES:
l)VGs~Ov.
2) 10 in ILA.
Vos~O V, VGS in volts.
4) 10 ~ 10 ILA.
3)
5)
ID~5.0
mAo
6) 10 ~ 200
ILA.
P-Channel JFETs
ELECTRICAL CHARACTERISTICS at TA = 25°C
VGS(off)
V(BR)GSS
limits
IGSS
Device
Min.
(WIG
Type
(V)
(~)
Max.
(nA)
THJ2608
THJ2609
THJ3329
THJ3330
THJ3331
THJ3332
THJ3820
THJ3993
THJ3994
THJ4381
THJ5018
THJ5019
THJ5020
THJ5021
THJ5033
THJ5114
THJ5115
THJ5116
THJ5460
THJ5461
THJ5462
30
30
20
20
20
20
20
25
25
25
30
30
25
25
20
30
30
30
40
40
40
1.0
1.0
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10
1.0
1.0
1.0
10
10
10
10
5.0
10
5.0
10
10
10
10
10
10
10
10
20
10
1.0
15
1.0
15
1.0
15
2.0
15
2.0
15
1.0
15
1.0
15
10
15
0.5
20
0.5
20
0.5
20
5.0
20
5.0
20
5.0 - /20
(aV GS
(V)
Conditions
loss
g"
Min.
(V)
Max.
1.0
1.0
4.0 -5.0 -1.0 2 -0.9 -4.5 -5.0
4.0 -5.0 -1.0 2 -2.0 -10 -5.0
5.0 -15 -102 -1.0 -3.0 -10
6.0 -15 -102 -2.0 -6.0 -10
8.0 -15 -10 2 -5.0 -15 -10
6.0 -15 -10 2 -1.0 -6.0 -10
8.0 -10 -10 2 -0.3 -15 -10
9.5 -10 -1.02 -10
-10
-10
5.5 -10 -1.02 -2.0
5.0 -15 -1.0 2 -3.0 -12 -15
10 -15 -1.0 2 -10
-20
-20
5.0 -15 -1.0 2 -5.0
1.5 -15 -1.0 2 -0.3 -1.2 -15
2.5 -15 -1.0 2 -1.0 -3.5 -15
2.5 -15 -1.02 0.3 3.5 -15
10 -15 -1.0 -30 -90 -15
6.0 -15 -1.0 -16 -60 -15
4.0 -15 -1.0 -5.0 -25 -15
6.0 -15 -1.0 -1.0 -5.0 -15
7.5 -15 -1.0 -2.0 -9.0 -15
9.0 -15 -1.0 -4.0 -16 -15
-
4.0
1.0
1.0
0.3
0.5
0.3
5.0
3.0
1.0
0.75
1.0
1.8
(V)
VDS
(V)
ID
(nA)
Min.
Max.
((iVOS
(mA)
(mA)
(V)
-
NOTES:
l)VGs~Ov.
2) ID in ILA.
3) Vos~O V, VGS in volts.
4) VGs=1.0 V.
3-28
(mS) (mS)
(V)
-
-5.0
-5.0
-
-
-
-
-
-
-
-
0.8
6.0
4.0
2.0
5.0
12
10
6.0
-10
-10
-10
-15
-
-
-
-
-
1.0
1.5
1.0
3.5
6.0
5.0
-
-
-15
-15
-10
-
-
1.0
1.5
2.0
5.0
5.5
6.0
-15
-15
-15
1.0
2.5
-
GRSS '
CISS '
((iVOS
-
-
Max.
(pF)
17
30
20
20
20
20
32
16
16
20
45
45
25
25
25
25
25
25
7.0
7.0
7.0
((IVOS
(V)
5.04
5.04
-10
-10
-10
-10
-10
-10
-10
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
Max. «lVOS
(pF)
(V)
-
16
4.5
4.5
5.0
10
10
7.0
7.0
7.0
7.0
7.0
7.0
3.0
3.0
3.0
rDS
Max.
(0)
-
-
-
-
-
-
Process
PJ32
PJ32
PJ32
PJ32
-
-
P~
-
-
PJ32
PJ32
PJ99
PJ99
PJ32
PJ99
PJ99
PJ32
PJ32
PJ32
PJ99
PJ99
PJ99
PJ32
PJ32
PJ32
-10
103
103
-15
123
7.03
-15
-15
-15
123
7.0 3
5.0 3
-15
-15
-15
-
150
300
75
150
75
100
150
-
-
JUNCTION FIELD-EFFECT TRANSISTOR CHIPS
P-Channel JFETs
ELECTRICAL CHARACTERISTICS at TA = 25°C
VGS(Off)
loss
V(BR)GSS
Conditions
Limits
loss
eASs 1
CISS 1
g"
'DS
Device
Type
THJJ174
THJJ175
THJJ176
THJJl77
THJJ270
THJJ271
THJP1086
THJP1087
THJU304
THJU305
THJU306
Min.
(wiG
Min.
(I'A)
Max.
(nA)
(aV GS
(V)
(V)
(V)
30
30
30
30
30
30
30
30
30
30
30
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.2
0.2
2.0
2.0
1.5
1.5
.5
20
20
20
20
20
20
15
15
20
20
20
5.0
3.0
1.0
0.8
0.5
1.5
-
5.0
3.0
1.0
Max.
(V)
VDS
(V)
(nA)
10
6.0
4.0
2.25
2.0
4.5
10
5.0
10
6.0
4.0
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
-15
-10
-10
-10
-10
-1.0
-1.0
-1.0 2
-1.02
-1.02
-1.02
-1.0 2
ID
Min.
(mA)
Max.
(mA)
(aVos
-20 -135
-7.0 -70
-2.0 -35
-1.5 -20
-2.0 -15
-6.0 -50
-10
-5.0
-30 -90
-15 -60
-5.0 -25
-15
-15
-15
-15
-15
-15
-20
-20
-15
-15
-15
NOTES:
1) VGS~O V.
2) ID in I'A.
3)
VDS~O
V.
VGS in volts.
3-29
(V)
(aVos
Max.
Pro-
(V)
(0)
cess
-
-
-
-
-
-
-
-
-
85
125
250
300
-
-
-
-
-
45
45
27
27
27
-15
-15
-15
-15
-15
10
10
7.0
7.0
7.0
12 3
7.0 3
12 3
7.0 3
5.0 3
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
PJ99
(a-Vos
(V)
Max.
(aVos
(pF)
(V)
-
-
-
-
-
-
-
-
15
18
-
-15
-15
-
-
-
-
-
-
Min.
(mS)
-
6.0
8.0
-
Max.
(mS)
-
-
Max.
(pF)
75
150
85
110
175
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'2N' and 'TP' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
DC Current Gain
ICBO
Ic
Device
Type
Max.
(rnA)
V(BR)CBO V(BR)CEO V(BR)EBO
(V)
(V)
(V)
TP918
50
30 15
3.0
TP930
5.0
100
45 45
TP2218
5.0
500
60 30
TP2218A
75 40
6.0
500
TP2219
5.0
500
60 30
TP2219A
500
75 40
6.0
TP2221
5.0
500
60 30
TP2221A
500
75 40
6.0
TP2222
5.0
500
60 30
TP2222A
500
75 40
6.0
TP2484
100
60 60
6.0
2N2712
500
18 18
5.0
2N2714
500
18 18
5.0
2N2923
500
25 25
5.0
2N2924
25 25
5.0
500
2N2925
500
25 25
5.0
2N2926
500
18 18
5.0
TP3252
800
5.0
60 30
TP3253
800
75 40
5.0
TP3299
5.0
500
60 30
TP3300
5.0
500
60 30
TP3301
500
5.0
60 30
TP3302
500
5.0
60 30
2N3390
500
25 25
5.0
2N3391
500
25 25
5.0
2N3391A 500
25 25
5.0
2N3392
5.0
500
25 25
2N3393
500
25 25
5.0
2N3394
500
25 25
5.0
2N3395
500
25 25
5.0
2N3396
5.0
500
25 25
2N3397
500
25 25
5.0
2N3398
5.0
500
25 25
2N3402
500
25 25
5.0
2N3403
500
5.0
25 25
2N3404
5.0
500
50 50
2N3405
5.0
500
50 50
2N3414
500
25 25
5.0
2N3415
500
25 25
5.0
NOTES:
1) Maximum at typical JEDEC conditions.
Max.
(nA)
10
10
10
10
10
10
10
10
10
10
10
500
500
100
100
100
500
500
500
103
10 3
103
103
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
(II VCB
hFE
(II
hFE
Ic «I VCE
(V)
(V)
Min. Max. (rnA)
15
45
50
60
50
60
50
60
50
60
45
18
18
25
25
25
18
40
60
50
50
50
50
18
18
18
18
18
18
18
18
18
18
25
25
50
50
25
25
20
100
40
40
100
100
40
40
100
100
100
75
75
90
150
235
35
30
25
40
100
40
100
400
250
250
150
90
55
150
90
55
55
75
180
75
180
75
180
-
300
120
120
300
300
120
120
300
300
500
225
225
180
300
470
470
90
75
120
300
120
300
800
500
500
300
180
110
500
500
500
800
225
540
225
540
225
540
3.0
0.01
150
150
150
150
150
150
150
150
10 2
2.0
2.0
2.0
2.0
2.0
2.0
500
375
150
150
150
150
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2) f1A.
3) V(BR)CES/ICES> as applicable.
4) rnA.
5) V(BR)CER
a(
R= 10n.
3-30
IT
VCE(sat)
1.0
5.0
10
10
10
10
10
10
10
10
5.0
4.5
4.5
10
10
10
10
1.0
1.0
10
10
10
10
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
Max.
(V)
NFl
(/lic Min. «tic Cob l (1
s
(rnA) (MHz) (rnA) (pF) (ns) (dB)
0.4
1.0
0.4
0.3
0.4
0.3
0.4
0.3
0.4
0.3
0.35
10
10
150
150
150
150
150
150
150
150
1.0
-
-
0.3 50
101000
-
-
600
30
250
250
250
300
250
250
250
250
15
80
4.0
0.5
20
20
20
20
20
20
20
20
0.05
2.0
1.7
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
6.0
12
-
-
-
-
-
-
-
-
-
0.5
0.6
0.22
0.22
0.22
0.22
500
500
150
150
150
150
200
175
250
250
250
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
0.3
0.3
0.3
0.3
0.3
50
50
50
50
50
50
-
50
50
50
50
50
50
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
10
12
12
8.0
8.0
8.0
8.0
10
10
10
10
10
10
10
10
10
10
FEE
225
-
JGA
DCA
JGA
DCA
JGA
DCA
JGA
DCA
-
-
225
-
-
-
225
-
-
-
225
-
-
3.0
FEE
-
JGA
JGA
JGA
JGA
JGA
JGA
-
70
70
150
150
150
150
-
-
-
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMA
3.0
-
-
Process
-
-
BHB
BHB
DCA
DCA
DCA
DCA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'2N' and 'TP' Device Types
= 25°C
ELECTRICAL CHARACTERISTICS at TA
DC Current Gain
ICBO
IT
VCE(sat)
Ic
Device
Type
Max.
(mA)
2N3416
2N3417
TP3444
TP3564
TP3565
TP3566
TP3567
TP3568
TP3569
TP3641
TP3642
TP3643
TP3691
TP3692
TP3693
TP3694
TP3700
TP3701
2N3704
2N3705
2N3706
2N3707
2N3708
2N3709
2N371o
2N3711
2N3721
TP3724
TP3724A
2N3825
2N3827
2N3858
2N3858A
2N3859
2N3859A
2N3860
2N3877
2N3877A
2N3900
2N3901
2N3903
NOTES:
1) Maximum
500
500
800
50
100
500
800
800
800
500
500
500
100
100
100
100
800
800
500
500
500
100
100
100
100
100
500
800
800
50
100
100
100
100
100
100
100
100
100
100
100
2) /LA.
V(BR)CBO V(BR)CEO V(BR)EBO
(V)
(V)
(V)
50
50
80
30
30
40
80
80
80
60 3
60
60
35
35
45
45
140
140
50
50
40
30
30
30
30
30
18
50
50
30
60
30
60
30
60
30
70
85
18
18
60
50
50
50
15
25
30
40
60
40
30
45
30
20
20
45
45
80
80
30
30
20
30
30
30
30
30
18
30
30
15
45
30
60
30
60
30
70
85
18
18
40
5.0
5.0
5.0
4.0
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
4.0
4.0
4.0
4.0
7.0
7.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
6.0
5.0
6.0
6.0
4.0
4.0
4.0
6.0
4.0
6.0
4.0
4.0
4.0
5.0
5.0
6.0
at typical JEDEC conditions.
Max.
(nA)
100
100
500
50
50
50
50
50
50
50 3
50 3
50 3
50
50
50
50
10
10
100
100
100
100
100
100
100
100
500
1700
500
100
100
500
500
500
500
500
500
500
100
100
50
VCB hFE
(V) Min.
((I
50
50
60
15
25
20
40
40
40
50
50
50
15
15
35
30
90
90
20
20
20
20
20
20
20
20
18
40
40
15
30
18
18
18
18
18
70
70
18
15
30
75
180
20
20
150
150
40
40
100
40
40
100
40
100
40
100
100
40
100
50
30
100
45
45
90
180
60
60
60
20
100
60
60
100
100
150
20
20
250
350
50
hFE
(a
Ic
Max. (mA)
(V)
2.0 4.5
2.0 4.5
500 1.0
15 10
1.0 10
10 10
150 1.0
150 1.0
150 1.0
150 10
150 10
150 10
10 1.0
10 1.0
10 10
10 1.0
150 10
150 10
50 2.0
50 2.0
50 2.0
0.1 5.0
1.0 5.0
1.0 5.0
1.0 5.0
1.0 5.0
2.0 10
100 1.0
100 1.0
2.0 10
400 10 10
120 2.0 4.5
120 10 1.0
200 2.0 4.5
200 10 1.0
300 2.0 4.5
250 2.0 4.5
250 2.0 4.5
500 2.0 4.5
700 2.0 4.5
150 10 1.0
3) V(BR)CES/ICEs' as applicable.
4) mAo
5) V(BR)CER
225
540
60
500
600
600
120
120
300
120
120
300
160
400
160
400
300
120
300
150
600
400
660
165
330
660
660
150
150
Ca VCE
at R= 10!L
3-31
Max. «li c Min. (a Ic Cob 1 ts1 NF1
(V) (mA) (MHz) (mA) (pF) (ns) (dB)
0.3
0.3
0.6
0.3
0.35
1.0
0.25
0.25
0.25
0.22
0.22
0.22
0.7
0.7
0.2
0.2
0.6
0.8
1.0
1.0
1.0
1.0
1.0
1.0
50
50
500
20
1.0
100
150
150
150
150
150
150
10
10
-
-
-
-
-
150
400
40
60
60
60
250
250
250
200
200
200
200
100
80
100
100
100
50
15
1.0
-
50
50
50
50
50
50
10
10
10
10
50
50
50
50
50
12
3.5
4.0
25
20
20
20
8
8
8
3.5
3.5
3.5
6.0
12
12
12
12
12
150
150
100
100
100
10 10 10 10 - 10 - 12
0.32 300 300 50 12
0.32 300 300 50 12
0.25 2.0 200 2.0 3.5
200 10 3.5
90 2.0 4.0
90 2.0 4.0
90 2.0 4.0
90 2.0 4.0
90 2.0 4.0
12
0.2 10 250 10 4.0
Process
JGA
JGA
70
-
-
-
DMA
-
-
FEE
JGA
JLA
JLA
JLA
JGA
JGA
JGA
-
-
-
-
-
-
-
-
-
4.0
-
4.0
-
-
-
-
5.0
-
-
-
-
-
-
BHB
FEE
FEE
FFB
FFB
JLA
DID
JGA
JGA
JGA
-
-
FEE
FEE
FEE
FEE
FEE
-
-
JGA
60
50
-
BHB
BHB
-
5.5
DMA
-
-
-
-
-
-
-
-
-
-
5.0
6.0
FEE
FEE
FEE
FEE
FEE
FEE
FEE
FEE
FEE
FEE
FFB
I
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'2N' and 'TP' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
fT
ICBO
VCE(sa!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @I c @VCE Max. @Ic Min. @Ic CObl tls NFl
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
2N3904
100
60
40 6.0
50 30 100 300 10 1.0 0.2 10 300
2N3974
500
60
30 5.0
500 40 55 200 10 1.0 0.3 150 2N3976
500
60
30 5.0
500 40 55 200 10 1.0 0.3 150 TP4013
BOO
50
30 6.0 1700 40 60 150 100 1.0 0.2 100 300
TP4014
BOO
BO
50 6.0 1700 60 60 150 100 1.0 0.26 100 300
2N4123
100
40
30 5.0
50 20 50 150 2.0 1.0 0.3 50 250
2N4124
100
30
25 5.0
50 20 120 360 2.0 1.0 0.3 50 300
2N4140
500
60
30 5.0
- - 40 120 150 10 0.4 150 250
2N4141
30 5.0
500
60
- 100 300 150 10 0.4 150 250
2N4286
100
25 6.0
30
50 25 150 600 1.0 5.0 0.35 1.0 40
2N4287
10 30 150 600 1.0 5.0 0.35 1.0 40
45 7.0
100
45
2N4292
50
30
15 3.0 500 15 20 - 3.0 1.0 0.6 10 600
2N4293
50
30
15 3.0 500 15 20 - 3.0 1.0 0.6 10 600
TP4384
500
40
30 5.0
10 30 100 500 0.01 5.0 0.2 10 30
TP4386
10 30 40 500 0.01 5.0 0.2 10 30
500
40
30 5.0
2N4400
500
60
40 6.0
100 30 50 150 150 1.0 0.4 150 200
2N4401
500
60
40 6.0
100 30 100 300 150 1.0 0.4 150 250
2N4409
100
80
50 5.0
10 60 60 400 10 1.0 0.2 1.0 60
2N4410
100 120
80 5.0
10 100 60 400 10 1.0 0.2 1.0 60
2N4424
40
40 5.0 100 25 180 540 2.0 4.5 0.3 50 500
TP4926
100 100 20 200 30 10 - 500 200 200 7.0
30
TP4927
100 100 20 200 30 10 500 250 250 7.0
30
2N4944
500
75
40 6.0
10 60 100 300 150 10 0.3 150 300
2N4945
500
75
40 6.0
10 60 100 300 150 10 0.3 150 300
2N4946
75
40 6.0
10 60 100 300 150 10 0.3 150 300
500
2N4951
500
60
30 5.0
50 40 60 200 150 10 0.3 150 250
2N4952
500
60
30 5.0
50 40 100 300 150 10 0.3 150 250
2N4953
500
60
30 5.0
50 40 200 600 150 10 0.3 150 250
2N4954
40
500
30 5.0
50 30 60 600 150 10 0.3 150 250
2N4966
100
50
50 50 35 100 300 0.1 5.0 0.7 10 30
2N4967
100
50
50 50 35 200 600 0.1 5.0 0.7 10 30
2N496B
100
50
50 50 35 100 300 0.1 5.0 0.7 10 30
2N4969
500
60
30 5.0
10 50 40 120 150 10 0.4 150 250
2N4970
500
60
30 5.0
10 50 100 300 150 10 0.4 150 250
TP5058
150 300 300 7.0
50 100 35 150 30 25 1.0 30 30
TP5059
150 250 250 6.0
50 100 30 150 30 25 1.0 30 30
2N5088
100
35
30 50 20 300 900 0.1 5.0 0.5 10 2N5089
100
25 30
50 15 400 1200 0.1 5.0 0.5 10 TP5127
100
20
12 3.0
50 10 15 300 2.0 10 0.3 10 150
2N5128
500
15
12 3.0
50 10 35 350 50 10 0.25 150 200
2N5129
15
12 3.0
500
50 10 35 350 50 10 0.25 150 200
2N5130
12 1.0
50
30
50 10 15 250 8.0 10 0.6 10 450
NOTES:
3) V(BR)CES/lcEs' as applicable.
1) Maximum at typical JEDEC conditions.
4) rnA.
2) I1A.
5) V(BR)CER at R=10n.
3-32
10
-
-
50
50
10
10
20
20
1.0
1.0
4.0
4.0
0.5
0.5
20
20
10
10
-
4.0
-
5.0
-
-
7.0
12
10
4.0
4.0
B.O
8.0
6.0
6.0
3.5
3.5
8.0
8.0
6.5
6.5
12
12
-
6.0
6.0
8.0
8.0
B.O
8.0
8.0
8.0
8.0
4.0
4.0
4.0
8.0
8.0
10
10
4.0
4.0
2.0 3.5
50 10
50 10
8.0 1.7
20
20
20
20
20
20
20
20
20
0.5
0.5
0.5
20
20
10
10
60
60
-
-
- 6.0
- 5.0
310 310 5.0
- 6.0
6.0
2.0
3.0
225 225 -
-
-
-
225
225
225
400
400
400
400
-
-
-
-
-
-
4.0
3.0
4.0
-
-
3.0
2.0
-
Process
FFB
JGA
JGA
BHB
BHB
FEE
FEE
DCA
DCA
FEE
FEE
DMA
DMA
JGA
JGA
DCA
DCA
FEE
FEE
JGA
BLA
BlA
DCA
DCA
DCA
DCA
DCA
DCA
DCA
FEE
FEE
FEE
JGA
JGA
BlA
BLA
FEE
FEE
FFB
JGA
JGA
DMA
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'2N' and 'TP' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. ((liVcB hFE hFE «d c (,,'VCE Max. «"I c Min. «d c COb1 t1s NF1
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF) (ns) (dB)
TP5131
100 20
15 3.0
TP5132
100 20
20 3.0
TP5133
100 20
1B 3.0
2N5135
BOO 30
25 4.0
2N5136
800 30
20 3.0
TP5137
BOO 30
20 3.0
2N5172
500 25
25 5.0
2N5174
75 5.0
100 90
TP51B9
BOO 60
35 5.0
2N5209
100 50
50
2N5210
100 50
50
2N5219
100 20
15 3.0
2N5220
500 15
15 3.0
2N5223
100 25
20 3.0
2N5225
100 25
25 4.0
2N5232
100 70
50 5.0
2N5232A
100 70
50 5.0
2N5249
100 70
50 5.0
2N5249A
100 70
50 5.0
2N5305
12
500 25
25
2N5306
500 25
25
12
2N5307
40
12
500 40
2N530B
500 40
40
12
2N5310
100 70
50 5.0
TP536B
500 60
30 5.0
TP5369
500 60
30 5.0
TP5370
500 60
30 5.0
TP5371
500 40
30 5.0
TP5376
500 60
30 5.0
TP5377
500 60
30 5.0
TP53BO
100 60
40 6.0
TP53B1
100 60
40 6.0
2N541B
500 25
25 4.0
2N5419
25 4.0
500 25
2N5420
500 25
25 4.0
TP5449
500 50
30 5.0
TP5450
500 50
30 5.0
TP5451
500 40
20 5.0
2N5550
600 160 140 6.0
2N5551
600 1BO 160 6.0
2N5770
50 30
15 4.5
2N5772
500 40
15 5.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) "..A.
50
50
50
300
100
100
100
500
500
50
50
100
100
100
300
30
30
30
30
100
100
100
100
10
50
50
50
50
10
10
50
50
100
100
100
100
100
100
100
50
10
500
10 35 500 10 1.0
10 30 400 10 10
15 60 1000 1.0 5.0
15 50 600 10 10
20 20 400 150 1.0
20 20 400 150 1.0
25 100 500 10 10
60 40 600 10 5.0
30 35 - 500 1.0
35 100 300 0.1 5.0
35 200 600 0.1 5.0
10 35 500 2.0 10
10 30 600 50 10
10 50 BOO 2.0 10
15 30 600 50 10
50 250 500 2.0 5.0
50 250 500 2.0 5.0
50 400 BOO 2.0 5.0
50 400 BOO 2.0 5.0
25 2k 20k 2.0 5.0
25 7k 70k 2.0 5.0
40 2k 20k 2.0 5.0
40 7k 70k 2.0 5.0
50 100 300 0.01 5.0
40 60 200 150 10
40 100 300 150 10
40 200 600 150 10
30 60 600 150 10
30 120 - 1.0 5.0
1.0 5.0
30 100 30 50 150 10 1.0
30 100 300 10 1.0
25 40 120 50 1.0
25 100 300 50 1.0
25 250 500 50 1.0
20 100 300 50 2.0
20 50 150 50 2.0
20 30 600 50 2.0
100 60 250 10 5.0
120 BO 250 10 5.0
15 50 200 B.O 10
20 30 120 30 0.4
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R=10n.
3-33
1.0 10
2.0 10
0.4 1.0
1.0 100
0.25 150
0.25 150
0.25 10
0.95 10
1.01000
0.7 10
0.7 10
0.4 10
0.5 150
0.7 10
O.B 100
0.125 10
0.125 10
0.125 10
0.125 10
1.4 200
1.4 200
1.4 200
1.4 200
0.125 10
0.3 150
0.3 150
0.3 150
0.3 150
100 10 6.0 200 10 3.5 40 1.0 5.0 40 30 25 40 50 35 40 50 35 10 - 5.0 250 50 12 70
30 0.5 4.0 30 0.5 4.0 150 10 4.0 100 20 10 150 10 4.0 50 20 20 - - 4.0 - - 4.0 -
-
-
-
-
-
-
60
60
60
60
2.0
2.0
2.0
2.0
-
10
10 10 10 -
250
250
250
250
20
20
20
20
-
-
-
-
-
0.2
0.2
0.25
0.25
0.25
0.6
0.8
1.0
0.15
0.15
0.4
0.2
10
10
50
50
50
100
100
100
10
10
10
30
250
300
10
10
-
-
-
-
-
100 50
100 50
100 50
100 10
100 10
90 B.O
350 30
-
-
4.0
3.0
-
5.0
-
3.0
-
-
-
-
B.O
B.O
B.O
8.0
B.O
B.O
4.0
4.0
6.0
6.0
6.0
12
12
12
6.0
6.0
1.1
5.0
350
350
400
400
-
-
-
-
_.
-
-
225 6.0
250 5.0
-
-
-
-
-
-
-
-
-
10
B.O
6.0
2B
-
Process
FEE
FEE
FEE
JLA
JLA
JLA
JGA
FEE
BHB
FEE
FEE
FFB
JGA
FFB
FEE
FEE
FEE
FEE
FEE
TPM
TPM
TPM
TPM
FEE
DCA
DCA
DCA
DCA
JGA
JGA
FFB
FFB
JGA
JGA
JGA
JGA
JGA
JGA
VXA
VXA
DMA
BJB
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'2N' and 'TP' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
ICBO
DC Current Gain
IT
VCE(Sal)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE (ii1c rJvVCE Max. @Ic Min. @Ic Cob l
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
TP581 0
800
TP5812
800
TP5814
800
TP5816
800
TP5818
800
TP5820
800
TP5822
800
TP5824
100
TP5825
100
TP5826
100
TP5827
100
TP5828
100
2N5830
300
2N5831
300
2N5832
300
TP5856
1000
TP5858
1000
TP5961
100
TP5962
100
2N5998
500
2N6008
500
TP6222
100
TP6224
100
2N6426
500
2N6427
500
2N6428
100
2N6429
100
NOTES:
1) Maximum at typical
35
35
50
50
50
70
70
50
50
50
50
50
120
160
160
60
80
60
45
35
35
60
60
40
40
60
55
25
25
40
40
40
60
60
40
40
40
40
40
100
140
140
60
80
60
45
25
25
60
60
40
40
50
45
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
8.0
8.0
5.0
5.0
5.0
5.0
12
12
6.0
6.0
100
100
100
100
100
100
100
50
50
50
50
50
50
50
50
100
100
2.0
2.0
30
30
50
50
50
50
10
10
25
60 200 2.0
2 0.75
25 150 500 2.0
2 0.75
25
2 0.75
60 120 2.0
25 100 200 2.0
2 0.75
25 150 300 2.0
2 0.75
25
60 120 2.0
2 0.75
25 100 200 2.0
2 0.75
40
60 120 2.0 5.0 ~.125
40 100 200 2.0 5.0 0.125
40 150 300 2.0 5.0 0.125
40 250 500 2.0 5.0 0.125
40 400 800 2.0 5.0 0.125
100
80 500
10 5.0
0.2
120
80 250 10 5.0
0.2
120 175 500 10 5.0
0.2
40
50 300 150 10
0.4
60
0.4
50 300 150 10
45 150 700
10 5.0
0.2
30 600 1400 10 5.0
0.2
25 150 300 10 2.0 0.25
25 250 500 10 2.0 0.25
60
75 200 2.0 5.0 0.125
60 150 300 2.0 5.0 0.125
30 20k 200k '10 5.0
1.2
30 10k 100k 10 5.0
1.2
30 250 650 0.1 5.0
0.2
30 500 1250 0.1 5.0
0.2
JEDEC conditions.
2) )LA.
3) V(BR)CES/ICEs, as applicable.
4) rnA.
5) V(BR)CER at R = 100.
3-34
500
500
500
500
500
500
500
10
10
10
10
10
10
10
10
150
150
10
10
50
50
10
10
50
50
10
10
tls
NFl
(ns) (dB)
100
135
100
120
135
100
120
90
90
90
90
90
100
100
100
100
100
100
100
140
140
50
50
50
50
50
50
50
2.0
2.0
2.0
2.0
2.0
10
10
10
50
50
10
10
10
10
15
15
15
15
15
15
15
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
15
15
4.0
4.0
-
-
-
-
-
-
150
130
100
100
10
10
1.0
1.0
4.0
4.0
7.0
7.0
3.0
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Process
JLA
JLA
JLA
JLA
JLA
JLA
JLA
FFS
FEE
FEE
FEE
FEE
VAS
VAS
VAS
DID
DID
-
-
FEE
FEE
JGA
JGA
FEE
FEE
-
10
10
TPM
TPM
-
-
-
FEE
FEE
1.5
1.5
-
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'MPS' Device Types
ElECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
MPS2712
MPS2714
MPS2716
MPS2923
MPS2924
MPS2925
MPS2926
MPS3390
MPS3391
MPS3392
MPS3393
MPS3394
MPS3395
MPS3396
MPS3397
MPS3398
MPS3402
MPS3403
MPS3404
MPS3405
MPS3414
MPS3415
MPS3416
MPS3417
MPS3563
MPS3565
MPS3566
MPS3567
MPS3568
MPS3569
MPS3642
MPS3693
MPS3694
MPS3704
MPS3705
MPS3706
MPS3707
MPS3708
MPS3709
MPS3710
MPS3711
DC Current Gain
ICBO
IT
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. «I VCB hfE hfE (II Ic (II VCE Max. ({Ilc Min. (al c Cob 1
(mA)
(V)
(V)
(V)
(nA) (V) Min. Max. (mA) (V)
(V) (mA) (MHz) (mA) (pF)
200
200
200
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
50
200
800
800
800
800
500
100
100
500
500
500
200
200
200
200
200
18
18
18
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
50
50
25
25
50
50
30
30
40
80
80
80
60
45
45
50
50
40
30
30
30
30
30
18
18
18
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
50
50
25
25
50
50
15
25
30
40
60
40
45
45
45
30
30
20
30
30
30
30
30
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
6.0
5.0
5.0
5.0
5.0
5.0
4.0
4.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
6.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) /-LA.
500
500
500
500
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
50 2
50
50
100
100
100
100
100
100
100
100
18
18
18
25
25
25
18
18
18
18
18
18
18
18
18
18
18
18
18
18
25
25
25
25
15
25
20
40
40
40
50
35
35
20
20
20
20
20
20
20
20
75
75
75
90
150
235
35
400
250
150
90
55
150
90
55
55
75
180
75
180
75
180
75
180
20
150
150
40
40
100
40
40
100
100
50
30
100
45
45
90
180
225
225
225
180
300
470
470
800
500
300
180
110
500
500
500
800
225
540
225
540
225
540
225
540
200
600
600
120
120
300
120
160
400
300
150
600
400
660
165
330
660
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
8.0
1.0
10
150
150
150
150
10
10
50
50
50
0.1
1.0
1.0
1.0
1.0
4.5
4.5
4.5
10
10
10
10
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
10
10
10
1.0
1.0
1.0
10
10
10
2.0
2.0
2
5
5
5
5
5
3) V(BR)CES/lcEs' as applicable.
4) mAo
5) V(BR)CER at R= iOn.
3-35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
50
50
50
50
50
50
50
50
-
-
0.35
1.0
0.25
0.25
0.25
0.22
1.0
100
150
150
150
150
-
-
0.6
0.8
1.0
1.0
1.0
1.0
1.0
1.0
-
100
100
100
10
10
10
10
10
-
-
600
40
40
60
60
60
250
200
200
100
100
100
-
-
-
8.0
1.0
30
50
50
50
50
10
10
50
50
50
-
ts1
(ns)
4.0
3.5
12
12
12
12
10
10
10
10
10
10
10
10
10
-
-
-
NF'
(dB)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Process
FEE
FEE
FEE
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
DMA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FEE
-
-
JLA
JLA
JLA
JLA
JGA
1.7
4.0
25
20
20
20
8.0
3.5
3.5
12
12
12
-
-
-
-
-
-
-
4.0
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5.0
-
-
FFB
FFB
JGA
JGA
JGA
FEE
FEE
FEE
FEE
FEE
I
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'MPS' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
DC Current Gain
fT
ICBO
) VCE(Sal)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB hFE hFE @I c @VCE Max. @Ic Min. @Ic COb'
(nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
(rnA)
(V)
(V)
(V)
MPS3721
500
MPS3826 200
MPS3827 200
MPS5127 100
MPS5131
200
MPS5132 200
MPS5133 200
MPS5135 800
MPS5136 800
MPS5137 800
MPS5172 500
MPS5305 500
MPS5306 500
MPS6512 200
MPS6513 200
MPS6514 200
MPS6515 200
MPS6520 200
MPS6521
200
MPS6530 500
MPS6531
500
MPS6532 500
MPS6541
50
MPS6560 1000
MPS6561 1000
MPS6564 200
MPS6565 200
MPS6566 200
MPS6571
200
MPS6573 200
MPS6574 200
MPS6575 200
MPS6576 200
MPS6601 1000
MPS6602 1000
MPS8097 200
MPS8098 800
MPS8099 800
MPSA05
800
MPSA06
800
MPSA09
200
MPSA10
200
NOTES:
-
60
60
20
20
20
20
30
30
30
25
25
25
40
40
40
40
40
40
60
60
50
303
25
25
-
60
60
20
-
25
30
60
60
80
60
80
50
-
45
45
12
15
20
18
25
20
20
25
25
25
30
30
25
25
25
25
40
40
30
20
25
20
45
45
45
20
35
35
45
45
25
40
40
60
80
60
80
50
40
500 18 60 660 2.0 10 - 4.0 100 30 40 160 10 10
- - 200 10
4.0 100 30 100 400 10 10 - - 200 10
3.0 50 10 15 300 2.0 10 0.3 10 3.0 50 10 30 500 10 1.0 1.0 10 10 10 2.0 10 200 10
3.0 50 10 20 3.0 50 15 60 1000 1.0 5.0
- - - 4.0 300 15 50 600 10 10 1.0 100 40 30
3.0 100 20 20 400 150 1.0 0.25 150 40 50
3.0 100 20 20 400 150 1.0 0.25 150 40 50
5.0 100 25 100 500 10 10 0.25 10 12 100 25 2k 20k 2.0 5.0 1.4 200 60 2.0
10 100 25 7k 70k 2.0 5.0 1.4 200 60 2.0
4.0 50 30 50 100 2.0 10 0.5 50 4.0 50 30 90 180 2.0 10 0.5 50 4.0 50 30 150 300 2.0 10 0.5 50 4.0 50 30 250 500 2.0 10 0.5 50 4.0 50 30 200 400 2.0 10 0.5 50 4.0 50 30 300 600 2.0 10 0.5 50 5.0 50 40 40 120 100 1.0 0.5 100 5.0 50 40 90 270 100 1.0 0.5 100 5.0 100 30 30 - 100 1.0 0.5 100 4.0 50 15 25 - 4.0 10
- - 600 4.0
5.0 100 20 50 200 500 1.0 0.5 500 5.0 100 20 50 200 350 1.0 0.5 350 5.0 500 40 25 10 5.0 0.5 10 4.0 100 30 40 160 10 10 0.4 10 200 10
4.0 100 30 100 400 10 10 0.4 10 200 10
3.0 50 20 259 tOOO 0.1 5.0 0.5 10 100 0.5
- 100 35 200 500 10 5.0 0.5 10 100 10
- 100 35 100 300 1.0 5.0 0.5 10 100 10
- 100 45 200 500 10 5.0 0.5 10 100 10
- 100 45 100 300 1.0 5.0 0.5 10 100 10
4.0 100 25 50 - 500 1.0 0.61000 100 50
4.0 100 25 50 - 500 1.0 0.61000 100 50
6.0 30 40 250 700 0.1 5.0
- - 6.0 100 60 100 300 1.0 5.0 0.3 100 150 10
5.0 100 80 100 300 1.0 5.0 0.3 100 150 10
4.0 100 60 50 - 100 1.0 0.25 100 100 10
4.0 100 80 50 - 100 1.0 0.25 100 100 10
- 100 30 100 600 0.1 5.0 0.9 10 30 0.5
4.0 100 30 40 400 5.0 10
- - 125 5.0
1) Maximum at typical JEDEC conditions.
2) fJ.A.
3) V(BR)cEs/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-36
tl
s
(ns)
- 3.5 3.5 - - - - 25 35 35 10 10 10 3.5 3.5 3.5 3.5 3.5 3.5 5.0 5.0 5.0 1.7 30 30 4.0 3.5 3.5 4.5 12 12 12 12 30 250
30 250
4.0 8.0 8.0 - -
5.0
4.0
-
NF'
(dB)
-
-
-
-
-
3.0
3.0
-
2.0
-
Process
JGA
FEE
FEE
FFB
FEE
FEE
FEE
JLA
JLA
JLA
JGA
TPM
TPM
FEE
FEE
FEE
FEE
FEE
FEE
DCA
DCA
DCA
DMA
DID
DID
FEE
FEE
FEE
FEE
FEE
FEE
FEE
FEE
DID
DID
FEE
JLA
JLA
JLA
JLA
FEE
VRB
PLASTIC-CASE BIPOLAR TRANSISTORS
NPN Transistors
'MPS' Device Types
ELECTRICAL CHARACTERISTICS at TA
Device
Type
= 25°C
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @lVCB hFE hFE @Ic @JVCE Max. ~lJlc Min. «vic Cob l
(rnA) (V)
(V)
(V)
(nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
MPSA12
500
MPSA13
500
MPSA14
500
MPSA1B
200
MPSA20
200
MPSA25
500
MPSA26
500
MPSA27
500
MPSA2B
500
MPSA29
500
MPSA42
500
MPSA43
500
MPSD01
500
MPSD02
600
MPSD03
600
MPSD04
500
MPSD05
BOO
MPSD06
500
MPSl01
600
NOTES:
1) Maximum at typical
20 3
30 3
30 3
45
40
40 3
50 3
60 3
B03
1003
300
200
200
140
100
25 3
25
25
140
-
-
45
40
-
-
300
200
200
140
100
25
25
120
10
10
10
6.5
4.0
10
10
10
12
12
6.0
6.0
4.0
4.0
4.0
10
4.0
4.0
5.0
15 20k -
100
100 30
100 30
50 30
100 30
100 30
100 40
100 50
100 60
100 BO
100 200
100 160
100 BO
100 BO
100 BO
1000 20
1000 20
1000 20
1000 75
10k
20k
500
40
10k
10k
10k
10k
10k
40
40
25
25
25
2k
BO
50
50
10
100
100
1500 10
400 5.0
- 100
- 100
100
100
100
30
30
10
10
10
- 100
100
10
10
300
-
-
-
5.0 1.0 10
5.0 1.5 100 125 10
5.0 1.5 100 125 10
5.0 0.2 10 100 1.0
10 0.25 10 125 5.0
5.0 1.5 100 125 10
5.0 1.5 100 125 10
5.0 1.5 100 125 10
5.0 1.2 10 125 10
5.0 1.2 10 125 10
10 0.5 20 50 10
10 0.5 20 50 10
10
- 40 10
10
- - 40 10
10
40 10
5.0 1.0 100 100 10
5.0 0.5 100 100 50
5.0 0.3 50 100 10
5.0 0.2 10 60 10
-
tl5
NFl
(ns) (dB)
-
-
-
-
-
-
3.0
4.0
-
1.5
-
-
-
-
B.O
B.O
3.0
4.0
-
-
B.O
-
-
-
-
-
-
Process
TPM
TPM
TPM
FEE
VRB
TPM
TPM
TPM
JEA
JEA
BlA
BLA
BLA
VXA
VXA
Sal
JlA
JGA
VXA
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 100.
JEDEC conditions.
2) fLA.
'0' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
D16P1
D33D21
D33D22
D33D24
D33D25
NOTES:
1) Maximum
2)~.
DC Current ,Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (iiNcB hFE hFE (a.l c «vVCE Max. «vic Min. «!JI c Cob l
(rnA) (V)
(V)
(V) (nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
500
BOO
BOO
BOO
BOO
1B
35 3
35 3
50 3
50 3
12
25
25
40
40
12
5.0
5.0
5.0
5.0
at typical JEDEC conditions.
100
1003
1003
1003
1003
1B
25
25
25
25
6k
60
150
60
100
-
200
500
120
200
100
2.0
2.0
2.0
2.0
5.0
2.0
2.0
2.0
2.0
3) V(BR)CES/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 100.
3-37
1.4
0.75
0.75
0.75
0.75
200 60
500 100
500 135
500 BO
500 120
2.0
50
50
50
50
10
15
15
15
15
t5 1 NFl
(ns) (dB)
-
-
-
-
-
-
-
-
Process
TPM
JlA
JLA
JlA
JLA
,I
!
PLASTIC·CASE BIPOLAR TRANSISTORS
NPN Transistors
'0' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
033026
033027
033029
033030
DC Current Gain
IT
ICBO
VCE(s,!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (rIVCB hFE hFE (illc (r,VCE Max. «llc Min. (id c COb I
(rnA)
(V)
(V)
(V)
(nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
800
800
800
800
.503
503
70 3
70 3
40
40
60
60
5.0
5.0
5.0
5.0
1003
1003
1003
1003
NOTES:
1) Maximum at typical JEDEC conditions.
2) f1A.
25 150 300
25 250 500
25 60 120
25 100 200
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
0.75
0.75
0.75
0.75
500 135
500 150
500 80
500 120
50
50
50
50
15
15
15
15
tl
S
(ns)
-
-
NFl
(dB)
Process
-
JLA
JLA
JLA
JLA
NFl
(dB)
Process
-
-
3) V(BR)CES/ICEs, as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
Pro-Electron Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
BC167
BC167A
BC167B
BC168
BC168A
BC168B
BC168C
BC169
BC169B
BC169C
BC182L
BC182LA
BC182LB
BC183L
BC183LA
BC183LB
BC183LC
BC184L
BC184LB
BC184LC
BC317
BC317A
DC Current Gain
IT
ICBO
VCE(s.!)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (roVCB hFE hFE (rllc (wVCE Max. (rd c Min. (id c COb I
(rnA)
(V)
(V)
(V)
(nA) (V) Min. Max. (rnA) (V) (V) (rnA) (MHz) (rnA) (pF)
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
503
503
503
303
303
30 3
30 3
30 3
303
303
60
60
60
45
45
45
45
45
45
45
50
50
45
45
45
20
20
20
20
20
20
20
50
50
50
30
30
30
30
30
30
30
45
45
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
5.0
5.0
5.0
6.0
6.0
NOTES:
1) Maximum at typical JEDEC conditions.
2) f1A.
15 3
15 3
153
15 3
15 3
15 3
15 3
15 3
15 3
15 3
15
15
15
15
15
15
15
15
15
15
30
30
50
50
50
30
30
30
30
30
30
30
50
50
50
30
30
30
30
30
30
30
20
20
120
120
180
120
120
180
380
180
180
380
120
120
180
120
120
180
380
240
240
450
110
110
800
220
460
800
220
460
800
800
460
800
800
220
460
800
220
460
800
900
500
900
450
220
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
3) V(BR)cEs/lcEs' as applicable.
4) rnA.
5) V(BR)CER at R= 10n.
3-38
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
85
85
85
85
85
85
85
85
85
85
150
150
150
150
150
150
150
150
150
150
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
10
10
10
10
10
10
10
10
10
-
-
-
tS I
(ns)
7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 -
10
10
10
10
10
10
10
4.0
4.0
4.0
10
10
10
10
10
10
10
4.0
4.0
4.0
6.0
6.0
JGA
J~A
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
PLASTIC·CASE BIPOLAR TRANSISTORS
NPN Transistors
Pro-Electron Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
BC317B
BC318
BC318A
BC318B
BC31BC
BC319
BC319B
BC319C
DC Cu rrent Gai n
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. ({vVCB hFE hFE ({d c ({vVCE Max. ({vic Min. (aJlc Cob'
(rnA)
(V)
(V)
(V)
(nA) (V) Min. Max. (rnA) (V)
(V) (rnA) (MHz) (rnA) (pF)
500
500
500
500
500
500
500
500
50
30
30
30
30
30
30
30
45
20
20
20
20
20
20'
20
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
30
30
30
30
30
30
30
30
NOTES:
1) Maximum at typical JEDEC conditions.
2) f1A.
20
20
20
20
20
20
20
20
200
110
110
200
450
200
200
420
450
BOO
220
450
BOO
BOO
450
BOO
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
10
10
10
10
10
10
10
10
-
-
-
-
7.0
7.0
7.0
7.0
7.0
7.0
7.0
7.0
t'
s
(ns)
NF'
(dB)
Process
-
6.0
6.0
6.0
6.0
6.0
4.0
4.0
4.0
JGA
JGA
JGA
JGA
JGA
JGA
JGA
JGA
t'
s
(ns)
NF'
(dB)
Process
3) V(BR)CES/ICEs, as applicable.
4) rnA.
5) V(BR)CER at R=10n.
PNP Transistors
'2N' and 'TP' Device Types
ELECTRICAL CHARACTERISTICS at TA = 25°C
Device
Type
TP2904
TP2904A
TP2905
TP2905A
TP2906
TP2906A
TP2907
TP2907A
TP2944
TP2945
TP2946
TP3250
TP3251
TP363B
TP363BA
DC Current Gain
IT
ICBO
VCE(sat)
Ic
Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. (j.vVCB hFE hFE
E
;;:
w
(!)
i'j
1--1-;"
I---
't
~
..,...:~ ~'C10V
VeE
I-
0.5
------
-- ..
l---
_..
.. . . . . . .
100
10
COLLECTOR CURRENT IN mA
1000
Dwg. No, A-13,691
__
..
.._ .. _ .. ~Cb
~L.'-~-~~~~~'~.0-~-~~~~~'~0-~20
1000
REVERSE BIAS IN VOLTS
DIM). No A-13,689
Dwg No. A-13, 1l'I2
4-7
PROCESS AKA
Process AKA
PNP Small-Signal Transistor
Process AKA is a PNP silicon epitaxial planar device designed for use as a high-voltage switch or a
low-power amplifier.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ...................... 1000mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
AKA
0.045" x 0.045"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
140
Limits
Typ.
Max.
170
-
V(BR)EBO
IE= 1O fJ- A
5.0
7.6
-
V
V(BR)CBO
Ic= 1OO fJ-A
140
240
-
V
ICBO
VcB =120V
-
-
100
nA
lEBO
VEB=5.0V
-
-
100
nA
-
100
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sat)
VcE =10V, Ic=1.0mA
VCE = 10V, Ic = 100mA
VCE = 10V, Ic = 200mA
Ic =10mA,I B=1.0mA
Ic =100mA,I B=10mA
ic =100mA,I B=10mA
fT
Ccb
Ceb
VcE =10V,l c =20mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-8
-
-
-
-
230
230
225
0.04
0.08
0.75
140
20
230
Units
V
-
-
-
-
0.3
0.5
0.9
V
V
V
-
-
MHz
pF
pF
PROCESS AKA
Typical Characteristics
at TA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
30a
I
250
300
Ii
V~~i:O ~v
I
:!'
'1
-- --I-~~
, ,
./
20 a
15a
;~1"5V
~-
1-;-:-
~
r-----~---~-~-~~-.~~~~
I111111
250 f---~----_l_--_l_---+--+---
- f-I-
";;;
I
\
VCEI~~1V\
I
I
I
I ii'
I
100
I
II
50
50 1 - - - - - - - ·---l----l--l--~~I----I--I-H
I
I
I
II
0.01
0.1
1.0
10
100
100
1000
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN rnA
D'M]. No,
Dwg. No, A-13,695
A-13,o93
VBElsal) AS A FUNCTION
OF COLLECTOR CURRENT
VeElsal) AS A FUNCTION
OF COLLECTOR CURRENT
1:;
50a
1
;;;
w
~
~
is
~,
'"fJ
II
40a
S?
~
"i'f~
30a
::>
is
Ii'
'"
~
a:
Ii'
t
::>
200
$
tJ
~
'"a:
V
15
~
10a
I
0.8
V
~
'V
0.6
V
I
a0.1
0.5
1.0
10
1000
100
I
I
I
I
I
100
10
1.0
01
DU} No. A-13,698
DVoIj. No, A-13,696
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBEION) AS A FUNCTION
OF COLLECTOR CURRENT
30a
1
1.0
111111
f - - I-
LI~li~
S?
;;;
~
~
a:
~
t:
~
t---r-- II
I
0
.Af'J
0.7
0.6
~ f-'
--- .......
a
Iii
a
1000
100
I
a
II
~ 1--"""
10
a
W'~r-loJ
I
~
VCE=15~ , , '
0.8
15
~
II
F--
250
Ct
0.9
i'f
is
1000
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN rnA
B
1/
0.7
~
7
I
0.9
to
II
~
I
UB=O.1I c I
w
1,,~o.IIGJ
I
II
1.0
0.1
" - ,-
-
.--
1"'--1'- !
en
,
............
"-
"
1.0
, ,
+~
___?Cb
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
OW], No. A-13,694
Dwg. No, A-13,697
4-9
20
PROCESS BAA
Process BAA
NPN Small-Signal Transistor
This double-diffused, silicon epitaxial planar device is designed for general-purpose use. Selected
versions of the Process BAA NPN transistor find
broad application in AM radio equipment, IF stages,
and converters, and as audio drivers, video amplifiers, and operational amplifier output stages.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 200 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
BAA
0.023" x 0.023"
ALTERNATE PROCESS: FEE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
~acteriStiC
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
60
Limits
Typ.
Max.
80
V(BR)EBO
IE= 1O fLA
6.0
8.5
-
V
V(BR)CBO
Ic = 100 fLA
100
180
-
V
ICBO
VcB =40V
-
-
100
nA
lEBO
VE8=6.0V
-
-
100
nA
-
100
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(sat)
VcE =5.01l, Ic=0.1 mA
VcE =5.01l, Ic=1.0mA
VcE =5.0V,l c =10mA
Ic=10mA,IB=1.0mA
Ic =100mA,I B=10mA
Ic=100mA,IB=10mA
fT
CCb
Ceb
VCE=5V,lc=1.0mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-10
50
20
-
-
400
500
550
0.08
0.17
0.9
200
3.4
5.8
Units
V
-
-
800
-
-
-
0.2
0.3
1.0
V
V
V
-
5.0
8.0
MHz
pF
pF
PROCESS BAA
Typical Characteristics
alTA = +25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hfE AS A FUNCTION
OF COLLECTOR CURRENT
700
e-
600
Ii
1~-
I
·unrmr
--ru
'.-::- ~~
--
-:'::(
-
II
:c,
~cc
k':::--
300
-
\ ..
)'~
500
~
~
,
!
I
I
10 0
0,001
II
I
III
0
0.1
0.01
~
I
I
1
200
./. ~
I
vedl
!I
-- - -------- '---f\!
,
\,
Vcr== 1 V
\
-
100
I I
VCF..-' 5V ..........
-
\
\
n
I
i
\
,,
,, \
,
I
~
10
1.0
V--
b
~
V-
300 ~-
I
I
I
\
200
400
tiOJ
elV
1
I
z
-
,
\
:
I
"
500
400
I
I
I,
0
100
100
10
1.0
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN mA
Dwg. No. A-13,699
Dwq, No. A-I:YOO
VSE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
1
250
U)
I
200
11 6 =0.11(;
':J
~
;;:
I
II
I
1
1.0
i'i
~
150
I
,
,
o.g
-
(5
~
VV
0.8
OJ
100
V
Ii
50
tc
U)
V
~
~w
~
II
v
V
0.7
to
II
o0.1
0.6
i
/
U
II
I
V
II
1.0
10
100
1.0
200
10
100
200
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN mA
Ow:].
No.
A~13,
Dwg. No. A-13,703
70\
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VSE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
2
1
0
0
'Ii
;;:
w
0
VCE=l V
0.9
VCE=-5V,
8
0.7
1
11 8 =O.1I c I
w
co
---
1-1f;.-- ~ r-
0.6
-- -/'
~
z
'"
U
11:
;)
z
rr
v
~ --~
f:~
80
Vc E=10V
§z
-
1"- 1'--
---- .....
6. 0
40
'-,
,
~
"
Cr"l NCO
oe----+---+-+++++li-I-------+
1----+--+-1+++++- ----j
1
0.5
1.0
10
100
°oL.1~~--~~-LLU1L.o--~--~~_LLU~10--~2o
200
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dwg. No
Dwg. NO. A-B,704
4-11
A~13.
702
PROCESS BBC
Process BBC
NPN Small-Signal Transistor
The electrical characteristics of selected versions
of Process BBC, the NPN counterpart of Sprague
Electric's planar PNP Process BDA transistor, match
those of many popular device types. These doublediffused silicon epitaxial chips are used as generalpurpose amplifiers and medium-power switching
transistors in a wide variety of small-signal, low-noise
applications.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
BBC
0.023" x 0.023"
ALTERNATE PROCESSES: DCA, JGA, TNL
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
25
Limits
Typ.
Max.
55
V(BR)EBO
IE= 1O fLA
6.0
7.4
-
V
V(BR)CBO
Ic=100fLA
80
140
-
V
ICBO
VcB =80V
-
-
100
nA
lEBO
VEB=5.0V
-
-
100
nA
VcE =5.011, Ic=0.1 mA
VcE =5.0V,l c =10mA
VcE =5.011, Ic=100mA
Ic=10mA,IB=1.0mA
Ic =100mA,I B=10mA
Ic =100mA,I B=10mA
-
-
-
800
-
VcE =5.0V,l c =50mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
Vce = 3011, Ic = 150mA,
IB=15mA
Vcc =30V,l c =150mA,
IB1 =I B2 =15mA
200
Symbol
V(BR)CEO
hFE
COllector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time'
Rise Time*
Storage Time*
Fall Time*
VBE(sat)
fT
CCb
Ceb
td
tr
ts
4
Test Conditions
..
*Swltchlng speeds measured at 2N2222A test conditions .
4-12
50
-
-
-
-
-
140
150
150
0.04
0.11
0.83
0.07
0.25
1.0
340
4.3
18.5
9.0
16
300
50
4.5
20
10
25
400
80
-
-
Units
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
PROCESS BBC
Typical Characteristics
atTA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
50
H-t+ttt+tHi-+t+fI
0.01
01
10
10
01LO--~-L--L-Ll.l-.LL1,L0---"------1--1-.-l-LLllJ100
500
100
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN rnA
O~.
400
w
§
~
z
I
Q
"
"'"
100
'1/
I
i
Ilil-Ht
II
i
10
II
/
I
;1,
10
100
V
,!
I
,n
v
0.5
0.1
500
Vi
I
II
I
~
a0
I
KiV
I
\
I~
!
II
I
I
I
!
I
III11
II
200
ifi
f2
,
i II,c011c I
I
a:
w
ftc
r±
IDlu
1
!
!
300
a:
=>
709
VBE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
VeE (,.!) AS A FUNCTION
OF COLLECTOR CURRENT
>
E
;;;
A~13.
No,
Vrll
:-- ,
!
II,
i '
III
I
10
10
500
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Owg. No. A-13.707
Dwg. NO. A-13,706
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
2oF---
5.0
1--+--+++-I-H+l-----l-f-i-i"+hId:l--
OL-_-"----L-L~~~_
0.1
___1_~~-LUUL_~
10
10
20
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
OW]. No. A-13,708
4-13
I"
PROCESS BCA
Process BeA
PNP Small-Signal Transistor
Process BeA is a PNP silicon epitaxial planar transistor. It is designed for use in low-noise amplifier
circuits. It is the complement to the NPN Process
VXA transistor.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 150 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -55°C to+150°C
seA
0.023" x 0.023"
ALTERNATE PROCESS: VHB
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
=+ 25°C
Ic= 10mA
Min.
60
Limits
Typ.
Max.
170
V(BR)EBO
IE=10""A
6.0
B.O
-
V
V(BR)CBO
Ic =100""A
BO
175
-
V
ICBO
VcB=BOV
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
-
400
400
390
0.06
O.OB
0.74
0.25
0.5
1.0
130
4.0
13
6.0
20
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(sat)
VcE =5.0V, Ic=0.1 mA
VCE=5.0V,lc=1.0mA
VCE=5.0V, Ic=10mA
Ic=1.0mA,IB=0.1mA
Ic =10mA,I B=1.0mA
Ic=10mA,IB=1.0mA
fT
CCb
Ceb
VcE =10V,l c =1.0mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-14
300
-
-
100
-
-
Units
V
-
-
900
-
-
-
-
V
V
V
MHz
pF
pF
PROCESS BCA
Typical Characteristics
at TA = +25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
40a
6OO~~TTTTT11r--rTITTTTTIrII~
500
1--H-1+I+1tt-+-l-t+t+tll-+++t+H#---f-H+tItIt-t+ttt11tt--v"l~ 11,~l
II
~
a
400ttml_tffir-:= -- I- -- ~fE--~tt-I" ,,
---_ .. _-
VCE = -5V
./
........
o~
",,,,"'''1:;::... ....
V~.,
~
.'
V
-
'\
""'"
f\
,,
,, 1\
,,
VcE =-1V
t"
0
0
10
100
10
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN rnA
DVvI;l. No A-13,712
DI'.4j. No. A-13,716
VBElsat) AS A FUNCTION
OF COLLECTOR CURRENT
VeElsat) AS A FUNCTION
OF COLLECTOR CURRENT
'E
10
300
w
~
250
b
~
;;;
1,,~0.1Ic 1
':j
~
~
w
~
~
z
~
~
i:(
a:
:J
i:(
en
DC
w
15a
/V
100
-
ri:
u
l'e~01lc
/
1
08
l,./y
Q
~.
~
0.9
'>'"j
200
i:(
a:
:J
I
en
I
;;;
50
0
0.1
10
V
07
/
I:::
15
W
0.6
~
~
100
10
....-
200
1.0
100
10
200
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN mA
DIMj
Dwg No. A-13,7\4
No. A-13,713
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBEION) AS A FUNCTION
OF COLLECTOR CURRENT
0
5
............ r-. t'"
" "
,
r--....
",~
~
~~
0
o
0.51.~0:----L_L-Ll--"-li.L,l,-0---L_-"---Ll--LU-';,~00:---;;!200
0.1
.........
CoO
ITI'
1.0
10
20
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dwg. No, A-13,7I!
DIMj. No, A-13,715
4-15
PROCESS BOA
Process BOA
PNP Small-Signal Transistor
A general-purpose PNP transistor, Process BDA is
used as a low-noise, high-gain amplifier and as a
medium-power switcher at frequencies from dc to
UHF. Selected Process BDA chips conform to the
electrical characteristics of a broad variety of popular
transistor types. The double-diffused, silicon epitaxial planar device is the complement to Sprague Electric's NPN Process BBG transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500 rnA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
BOA
0.023" x 0.023"
ALTERNATE PROCESSES: DDA, JFA, TOl
=
ELECTRICAL CHARACTERISTICS at TA + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Em itte r-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
30
limits
Typ.
Max.
65
V(BR)EBO
IE=10/LA
6.0
8.2
-
V
V(BR)CBO
lc = 100 /LA
40
90
-
V
ICBO
VcB =40V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
VcE =5.0V, Ic=0.1 rnA
VCE=5.0V,lc=10mA
VcE =5.0V,l c =100mA
Ic =100mA,I B=10mA
Ic =500mA,I B=50mA
Ic =100mA,I B=10mA
-
-
-
Symbol
V(BR)CEO
hFE
Test Conditions
50
20
-
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
VBE(Sat)
fr
COb
Cib
NF
VcE =5.0V,l c =50mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
Ic=200mA, VcE =5.0V,
Rs=2k!1, f=1.0kHz
100
Delay Time*
Rise Time*
Storage Time*
Fall Time*
td
t,
ts
Vcc=6.0V,lc=150mA,
IB=15mA
Vcc =6.0V, Ic=150mA,
IB1 = IB2= 15mA
it
*Switching speeds measured at 2N2907 test conditions.
4-16
-
360
360
280
0.19
0.83
0.86
600
-
-
-
0.4
1.6
1.3
V
V
V
-
-
280
5.7
19
6.0
8.0
30
15
-
5.0
14
70
50
10
20
100
80
-
Units
V
MHz
pF
pF
nV
v'HZ
ns
ns
ns
ns
PROCESS BOA
Typical Characteristics
at TA = +25°C
iT AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
500
[JJ11~t
400
:--
.' .
. .
;;.-300
.. - .. -
-
-
N
:J:
::.
5V
--1-rttl'l~' ••
__ VcE =-1V
VCE-
~
.
....
............... ........
300
Q.
-
200
>-
.
\
\
100
1.0
10
"~
z
~"
,
100
;;:
[I
::.
u
I
z
to
:l'
§
Ils=O.lIc
Q
~
a:
1.1
g
:::>
I!!
,
Dwg. No. A-14,093
VCE(satl AS A FUNCTION
OF COLLECTOR CURRENT
~a:
.~
COLLECTOR CURRENT IN rnA
D'M]. No. A-14,091
~g
....
10
COLLECTOR CURRENT IN mA
>
Y-rf'- VCE=-1V
100
o1.0
500
vyti
..--
:::>
"0a:
\\
0.01
400
>-
u
~'
.- FSlf-:! •
-
VVE=
1.0
~
I"'-r-C"
............
15
z
Q
t;
-10V
10
................
z
--
~
...5
20
5.0
10
100
0
0.1
500
1.0
10
REVERSE BIAS IN VOLTS
CCLLECTOR CURRENT IN rnA
DV09 No. A-14,092
O"J No. A-14,"'5
4-17
2()
PROCESS BFA
Process BFA
PNP Small-Signal Transistor
Exhibiting excellent current-gain linearity and very
low collector-emitter saturation voltage, Process BFA
finds broad application as a medium-power amplifier
and switching transistor. This PNP, double-diffused,
silicon epitaxial device is the complement to Sprague
Electric's NPN Process DAC transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 800 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
BFA
0.024" x 0.024"
ALTERNATE PROCESSES: DFC, JMA
=
ELECTRICAL CHARACTERISTICS at TA + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
• Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Ic=10mA
Min.
30
Limits
Typ.
Max.
100
V(BR)EBO
IE= 10ILA
6.0
8.0
-
V
V(BR)CBO
Ic = 100 ILA
50
140
-
V
ICBO
VcB =50V
-
-
100
nA
lEBO
VEB =5.0V
-
-
100
nA
-
-
-
VBE(Sat)
VCE=5.0V, Ic=10mA
VcE =5.0V, Ic=100mA
VcE =5.0V,l c =500mA
'c=100mA,I B=10mA
Ic=500mA, IB=50mA
Ic=500mA, IB=50mA
fT
CCb
Ceb
VcE =10V,l c =100mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
100
Symbol
V(BR)CEO
hFE
VCE(sat)
Test Conditions
4-18
50
-
-
-
220
210
150
0.12
0.38
0.95
330
7.0
43
500
-
0.15
0.4
1.0
-
15
70
Units
V
V
V
V
MHz
pF
pF
PROCESS BFA
Typical Characteristics
at TA = +25°C
IT AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
300
Il!~~jl ~~n
250
200
~.
,::.. .
:i'
- "ff $'~-5V
-Ilt -.
e--.
.,
-
"
~
,
\
150
I
\
100
~
.............
-~
~.
200
~
~ill
\
k0 ~'"
V V
-"
......
~-
I
1---- - -r-of.,
"-
,
\
300
~
'
vEl-
v;,}_1'0Iv
v:!:lF'
.. -..
400
I
VcE =-1V
k::-'
'",-
,:;
100
50
o
O.ODl
0.1
0.01
1.0
10
100
0
1000
100
10
1.0
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN mA
DIM]. Noo A-13,719
DWj, No. A-13,717
VBE{sal) AS A FUNCTION
OF COLLECTOR CURRENT
VeE{sal) AS A FUNCTION
OF COLLECTOR CURRENT
1.2
400
J
\2
I
300
UJ
~
fJ
[i0JJIC]
1.0
~
a:
II
0.8
:0
VV
"
if>
a:
to
"W
0.6
UJ
p..-V
~75
~
::;
-ii--
100
~
t;
~"
[1)1
Vce=1V
....
50
~
0.01
1.0
0.1
,/""
10
100
~
200
~
100
~
--
~ ---- ....
1.0
10
COLLECTOR CURRENT IN rnA
100
COlLECTOR CURRENT IN rnA
Ow;!. No. A-13,723
O"lj. No. A-13.m
1.3
500
II
w
~
400
0'f~.9.1Ic
§l
!
1
DB=O.1Ic
~
t;:
0:
300
~
0:
w
~
::;
200
~
~::l
8
I
VUE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
>
E
:;:;
JnH
_j...yce=1V
o
1000
V
- --~--C.--. . --
300
"z
~
25
JJH
400
100
-
......11
V
o0.1
1.0
10
100
0.5
1000
....0.1
.--
-I-
10
1.0
1000
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
01'.9. No. A-13.726
DWJ. No, A-13,727
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VUE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
1. 3
1
Vce=1V
II
VCE=5V
~
~ f0.5 1.0
10-10-
~
-~
Vce=1DV
.. - ...... - ........
I--"'
-.......... -........
..
10
100
1.0
1000
...... Cob
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Ow:]. No. A-13.724
Owg. No. A-B,12S
4-21
PROCESS BJB
Process BJB
NPN High-Speed Switching Transistor
Process BJB is a double-diffused epitaxial planar
NPN silicon device. It is designed to be used in highspeed, medium-current switching applications.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 300 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
BJB
0.020" x 0.020"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
10
Limits
Typ.
Max.
20
V(BR)EBO
IE=10j-LA
5.0
6.8
-
V
V(BR)CBO
Ic=100j-LA
30
55
-
V
ICBO
Vcs=30V
-
-
100
nA
lEBO
VEB=5.0V
-
-
100
nA
-
-
-
-
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VSE(sat)
VCE=5.0V, Ic=0.1 mA
VCE=5.0V,lc=10mA
VcE =5.0V,l c =50mA
Ic=10mA,ls=1.0mA
Ic=50mA,ls=5.0mA
Ic=50mA,ls=5.0mA
fT
Ccb
Ceb
VcE =5.0V,l c =10mA
Vcs=10V, f=1.0MHz
VEs =0.5V, f=1.0MHz
hFE
4-22
-
-
-
Units
V
50
70
70
0.13
0.16
0.83
-
-
0.3
0.5
1.0
V
V
V
440
3.0
7.0
5.0
15
-
-
MHz
pF
pF
PROCESS BJB
Typical Characteristics
alTA
=
+25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
100
600
vc,J~ ..........
I
I
11111
aD
:\'
lt~\o~
--
11[.3
l[::tJ
60
40
.,.
20
~'
~
,
I',:
"
"
,
::J
0
12
Db
300
;;:
'"
1.0
10
100
100 200
No. A-13,729
VaE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
10
300
E
<;
UJ
I
C;
Q
1
0:
200
0.9
II
B
z
Q
0:
a:
I
=O.1Ic
I
oa
V'
::J
a:
w
,/
~
I
~
i2
w
~
g
II
1',~0.1Ie 1
a:
":J!
II
g
<;
250
z
0:
UJ
100
10
1.0
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
::J
VCE=1 V
GOLLEClDR CURRENT IN rnA
ov.q.
~
g
a:
w
150
tto
I:,-
~
100
10
1.0
0.7
V
a'l
,/
~
0
"
0.6
200
V
~
100
10
1.0
0.1
OW] No. A-13,732
OW]. No. A-13,733
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VaE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
ll
1 0 , - - - - . - - , - , - " " " - - - - , - - , - , , , - rrrn
1.0
1
UJ
C;
<;
i
z
0.9
o.a
i
~
0.6
~
r-'
I Iori:r
~
~
~
I.¢ ~f.1
V = 10 V
§
CE
z
~
I
1.0
10
100
I
I!
1------+--~++-1+H--t----+--!I-H++++1
! r::t:-t-+-
I VcE =5V
tto
0.7
a.o
V
le'11, ,----
9
a:
w
a'l
Ii
I
w
~g
200
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
g
V
/'"
200
COLLECTOR CURRENT IN rnA
>
':T
'",
r····...t::t---
4.0
I'
I
'. ..
i
2.01----+--+--+-H-H-+t----+-j-----j'---t+H-H
~.L1----L-~~-L~~1~.0~--~~~~-L~10
200
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dwg. No. A-13,734
4-23
PROCESS BlA
Process BLA
NPN High-Voltage Transistor
The NPN process BLA transistor is a doublediffused silicon epitaxial planar device used primarily
in video circuits and similar high-voltage, low-current
applications. Its PNP complement is the Sprague
Electric Process BMA transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, T5 ..... -55°C to+150°C
BlA
0.028" x 0.028"
ALTERNATE PROCESS: OVA
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Test Conditions
Ic=1.0mA
Min.
200
Limits
Typ.
Max.
320
-
V(BR)EBO
IE=10""A
6.0
9.0
-
V
V(BR)CBO
Ic= 100!LA
250
390
-
V
ICBO
VcB =200V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
-
65
75
75
0.07
0.09
0.71
-
-
300
-
0.12
0.16
1.00
65
3.3
50
6.0
60
Collector-Emitter
Saturation Voltage
VCE(sa!)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sa!)
VCE=10V,lc=1.0mA
VcE =10V,l c =10mA
VcE =101/, Ic=50mA
Ic=10mA,IB=1.0mA
Ic=50mA,IB=5.0mA
Ic=10mA,IB=1.0mA
fT
COb
Cib
VcE =101/, Ic=10mA
VcB =101/, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-24
25
20
-
40
-
-
-
-
Units
V
V
V
V
MHz
pF
pF
PROCESS BlA
Typical Characteristics
at TA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
100
100
80
... - .. ,
I-
:\'
111111
";;;
Ve, 10V
§"
'VcE =5V,
60
1\
~
I
\
b
\'
z
~
0
o
0.01
0.1
10
1.0
\ 1\
40
\
~
\
~
\
20
,
60
"-
\
40
80
b
1111f
'il:rm
20
o1':;-.o--"------'---.l.-L.L1..LL1:':-o--..l------1-----'--L-LLLL!1oo
100 200
COLLEClDR CURRENT IN mA
COLLECTOR CURRENT IN rnA
Dw:!, No. A-13.738
DW]. No, A-IJ,736
V8E(sal) AS A FUNCTION
OF COLLECTOIt CURRENT
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
(/)
"
0.9
1.0
\2
I
;;;
~
\2
1:j
I;:
0.8
1/
11,"0.1I e 1
11,"0.1I e 1
0.6
"I;:
'"a:
~
VI--
V
a:
7
........- V
0.4
~
d:
!2
0.2
~
0
V
V0.1
1.0
10
100
100
10
1.0
200
200
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Dw:). No. A-13,735
Dw;!. No. A-13,740
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
- ---
.... ......
....... ..
..
.. .. -COb
°0~.1------1--"-L.l-UU-L1L.0------'--'---'--J-LLU-'-10-~20
0.51.LO
------'--"-L.l-LLLl1-'-0---''---'--'--J-LLl.l1-'-00,------,l200
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dwg, No, A-13,739
D\YJ. No, A-B,737
4-25
PROCESS BMA
Process BMA
PNP High-Voltage Transistor
The PNP process BMA transistor is a doublediffused silicon epitaxial planar device used primarily
in video circuits and similar high-voltage, low-current
applications. Its NPN complement is the Sprague
Electric Process BLA transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, T5 ..... - 55°C to + 150°C
BMA
0.028" x 0.028"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Test Conditions
Ic= 1.0mA
Min.
300
Limits
Typ.
Max.
400
V(BR)EBO
IE=10j.LA
6.0
8.0
-
V
V(BR)CBO
Ic=100j.LA
300
400
-
V
ICBO
VcB =200V
-
-
100
nA
lEBO
VEB =6.0V
-
-
100
nA
-
Collector-Emitter
Saturation Voltage
VCE(s,!)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(s,!)
VCE=10V,lc=1.0mA
VcE =10V, Ic=10mA
VcE =10V, Ic=50mA
Ic=10mA,IB=1.0mA
Ic=20mA,IB=2.0mA
Ic =10mA,I B=1.0mA
95
100
90
0.16
0.23
0.72
0.25
0.4
0.9
V
V
V
fT
COb
Cib
VcE =10V, Ic=10mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
80
5.3
50
8.0
100
MHz
pF
pF
hFE
4-26
25
20
40
-
Units
V
-
-
300
-
-
-
PROCESS BMA
Typical Characteristics
alTA = +25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
125
100
IllJ 11
100
\
Ir.i
75 F"
l!
"'"
~r"1:
to=>
veE=c -5V \
0
50
\
Vee ~ -1 V \
25
01
0
··.
\
60
#..'
"p.
f-
0
'!i
Cl
..
/
I
40
CO
,~
'\
\\
\
20
\
\
o
100200
10
". "
.
...
VCE = - 1V
~
0'
------VCE~ -sV \
'
.'
--
~/
z
«
IIIIIII
1.0
80
it
.
,
I
~~10V
1\
..
100
10
10
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN mA
D'MJ. No. A-13,745
VBE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
VeE("I) AS A FUNCTION
OF COLLECTOR CURRENT
U)
I::J
~
't'j"
09
1.0
I
W
CO
II
08
CO
I
06
f-
[I B =O.1I c
~
li'
a:
li'
U)
a:
'"
lo
ci:
02
0.7
=>
iii
iii
,./
0.6
W
~
g
()
10
10
05
100
)/
I
V
z
III
04
lo
fJ
&l
,,/
0.8
Q
=>
li'
U)
a:
w
't'j"
~
~
li'
a:
I::J
~
w
z
Q
U)
--- ...
0.1
V
10
V
200
Dwg. No. A-13.742
Dwg. No, A-13,741
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
10
100
10
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN mA
lUI,)
09
l.1
/ /'
1
--5V
VeE
08
.
:::
V
/. ~
0.7
06
-
/
.VeE =-1QV
.;-
~
~~
....................
.. .... ·C Ob
0.5
OL-__~~-L~LUiL__~__~~-LLU~__~
1.0
10
100
01
200
COLLECTOR CURRENT IN mA
1.0
REVERSE BIAS IN VOLTS
10
20
DWj. No. A-13,744
Dwg. No. A-13,746
4-27
PROCESS BNB
Process BNB
NPN Darlington Transistor
Process BNB is a double-diffused epitaxial planar
NPN silicon Darlington pair. It is designed for use in
high-gain, high-current amplifier circuits. Its complement is the PNP Process BOB Darlington transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ...................... 1000mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, T5 ..... - 55°C to + 150°C
BNB
0.031" x 0.031"
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Test Conditions
Limits
Typ.
Max.
BO
Symbol
V(BR)CEO
Ic=10mA
Min.
40
V(BR)EBO
IE= 101lA
10
14
-
V
V(BR)CBO
Ic =100,....,A
60
100
-
V
ICBO
VcB =40V
-
-
100
nA
lEBO
VEB =10V
-
-
100
nA
-
-
-
-
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sat)
VCE = 5.0V, Ic = 10mA
VcE =5.0V,l c =100mA
VcE =5.0V,l c =200mA
Ic=10mA, IB=0.01 rnA
Ic =200mA,I B=0.2mA
Ic =200mA,I B=0.2mA
fr
CCb
Ceb
VCE=5.0V, Ic=10mA
VcB =10V, f=1.0MHz
VEB = 1.0V, f= 1.0 MHz
hFE
4-28
-
-
-
100
-
-
Units
V
22k
30k
2Bk
0.71
O.B
1.5
-
-
1.0
1.2
2.0
V
V
V
190
1.4
5.0
6.0
10
-
MHz
pF
pF
PROCESS BNB
Typical Characteristics
at TA = +25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
SOK
I
40K
~
";:;
mr~1°1~
10K
10K
..- .- . m-'-i', ,
--'
.
....
f..::" -\
to:::>
~
"-
Vc,05~_~
30K
1--:. -
~ ;:-
o0.1
--
--
VCE~1V
,
..../
b
~
200
z
I
100
10
300
I
\
1.0
I
400
....
Vce=5V
'
f-"
.1-1 "
....-
Vce=2V
..... 1-"'
100
o1.0
700
;111
..
~
.'
1110
10
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN rnA
Dv.g. No. A-13,749
VUElsal) AS A FUNCTION
OF COLLECTOR CURRENT
VeE1"1) AS A FUNCTION
OF COLLECTOR CURRENT
1i
1.1
2.0
Cf)
;:;
~
S2
5t;c
a:
1.0
II,
~
I
0
9
;;;
0.001 101
~
g
0.9
:::>
a:
w
0.8
~
0.7
I--0.6
-
~
III
0
0.0011,1
1.6
~
a:
1.4
":l:
1.2
.... /'
~
to
_f--
V
~
10
1.0
[i;
~
V
"~
§
a
)/
~
t:::
1.8
w
1110
1.0
1000
-
V
~f--
10
1.0
100
Ow;!. No. A-I3,l50
Ow;;, No. A-13,751
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VUEION) AS A FUNCTION
OF COLLECTOR CURRENT
2.0
7.0 ,-----,----,---""TTT-----,-,------,-,TTrTT-----,
Cf)
~
S2
6.0
1.8
rrv
;;;
w
~
1.6
VC~
S2
Z
9
a:
~
to
1.4
~
1.2
1000
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN mA
":l:
~
~
....
.- ~
I--I-+-+-++++++----t-H-+++H+---j
'a
~
I
•
V:e=lOV
~
I-
5.0::----
r--
1"--.....
4.0
p,'"-...r--+--t-++-t+t+---I--+i"--"1"-H+H+----j
",
C~
30 f---+--+-+-+-H"I-tt'-'-,,-,,--i,-+--1-++++++-----1
2.0
f---+--+-+-+-H++t----1-"-=:''!-C'''''''I-++++++--Y
.........
1.01.0
10
100
1.°0L.1---"-------L----'----'---'--'--LLl1.0,----------'--'-----LL-'--LLl..L10--'20
1000
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Owg. No. A-13,752
0"1).
4-29
No. A-13,748
PROCESS BOB
Process BOB
PNP Darlington Transistor
Process BOB is a PNP silicon epitaxial planar
Darlington pair. It is designed for use in high-current,
high-gain amplifier applications. Its NPN complement is the Process BNB Darlington transistor.
ABSOLUTE MAXIMUM RATINGS
;
Collector Current, Ic ...................... 1000 mA
Operating Junction Temperature, TJ • . . . . . . . . . + 150°C
Storage Temperature Range, T5 ..... -55°C to+150°C
BOB
0.031" x 0.031"
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Limits
Typ.
Max.
85
-
Symbol
V(BR)CEO
Ic=10mA
Min.
60
V(BR)EBO
IE= 1O f.1A
30
60
-
V
V(BR)CBO
Ic= 1OOf.1A
12
16
-
V
ICBO
VcB =50V
-
-
100
nA
lEBO
VEB =10V
-
-
100
nA
-
-
-
100
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sat)
VcE =5.011, Ic=1.0mA
VcE =5.0V,l c =10mA
VcE =5.011, Ic=100mA
Ic=10mA, IB=0.01 mA
Ic=100mA, IB=0.1 mA
Ic=100mA, IB=0.1 mA
fT
CCb
COb
VcE =5.0V,l c =20mA
VcB =1011, f=1.0MHz
VEB=1.011, f=1.0MHz
hFE
4-30
3k
3k
-
-
-
20k
25k
25k
0.70
0.76
1.4
200
2.3
3.7
Units
V
60k
-
-
-
1.0
1.2
1.6
V
V
V
8.0
10
MHz
pF
pF
PROCESS BOB
Typical Characteristics
at TA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
SOK
5'
40K
";;;
..' . -
--
..--. . f-o-V
20K
10K
~
VeE"" -
-....
sv
0
0
a:
ttHt--- __ •
VcE =-1V
300
V
"-
I
to
,
~
z
200
"
100
--
'zIi
(9
o
0
0.1
10
~
V.................. ..-
.
-- -- --- -
~~
to
1000
100
10
~lf
I:i::>
VCf:'= -10V
30K
400
100
Dwg, No, A-13,154
VBElsal) AS A FUNCTION
OF COLLECTOR CURRENT
VeElsal) AS A FUNCTION
OF COLLECTOR CURRENT
;;;
U)
I
to
z
0.9
"'
"'a:w
0.8
b
§;<
z
w
[18=0.001Ic
I
\1f:j
U)
rlr±l
:;!
()
1 18 =0.001 Ic I
...-V
Q
a:
i=
16
§;<
z
Q
::>
I
1.8
1.1
§;<
~
§;<
VCE= - 2V
10
Dwg. No. A·{3,758
U)
-
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
b
- --llir
0.7
-
"'
V
a:
::>
"'
f..-
f;.-- ~
14
U)
V
ffi
lf--
":J:~ V
0.6
~
()
1.0
05,L.0--'--'-LLLllli'0--'--'---'-J-LLli,.LOO---"---"-.L.L.LLllJ1000
~
12
10
V
10
1000
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Dwg. No.
A~13,
Dw:!. No. A-13,755
756
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
V8EION) AS A FUNCTION
OF COLLECTOR CURRENT
1.6 ~-+-++++'4+I--l--l---H-I-I-+++---I--I-U-l-Jll+
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Dwg. No. A-t3,753
D'Ng. No. A-13,7S7
4-31
PROCESS BTB
Process BTB
PNP Switching Transistor
The Process BTB transistor is a double-diffused
epitaxial planar device with a gold diffusion. It is
primarily used in general-purpose switching and amplifier circuits. Its NPN complement is the Process
FFB transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 200mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
BTB
o.m~xo.mr
ALTERNATE PROCESS: SMN
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
30
Limits
Typ.
Max.
60
-
V(BR)EBO
IE=10!lA
6.0
8.2
-
V
V(BR)CBO
Ic=100fLA
40
75
-
V
ICBO
VcB =40V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
VCE=1.0V,lc=1.0mA
VCE=1.0V,lc=10mA
VCE = 1.0V, Ic = 50mA
Ic=10mA,IB=1.0mA
Ic=50mA,IB=5.0mA
Ic=50mA,IB=5.0mA
-
135
170
130
0.06
0.11
0.85
-
-
500
-
0.25
0.4
0.95
V
V
V
VCE = 20 V, Ic=10mA
VcB =10V, f=1.0MHz
VEB =0.511, f=1.0MHz
VcE =5.011, Ic=100fLA,
Rs = 1kil, BW = 10Hz-15.7kHz
Vcc=3.011, Ic=10mA,
IB=1.0mA
Vcc=3.0V,lc=10mA,
IB1 = IB2 = 1.0mA
250
650
2.1
6.5
1.0
4.5
10
5.0
MHz
pF
pF
dB
18
14
150
22
35
35
225
75
ns
ns
ns
ns
Symbol
V(BR)CEO
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
VBE(sat)
Delay Time'
Rise Time'
Storage Time'
Fall Time'
=+ 25°C
IT
COb
Cib
NF
td
t,
ts
It
Test Conditions
'Swltchlng speeds measured at 2N3906 test conditions.
4-32
50
20
-
-
-
-
Units
V
PROCESS BTB
Typical Characteristics
alTA
=
+25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
250
700
11~jl-IJ
200
~
150
-- -
/.
.'
"
:;
~
;;;
()
OJ
0
a:
10
;,...
'J:
I-
~.
\
01
1.0
10
1',
4IlIl
..'"z
z
.
100
;;:
'"
300
.'
......
.."
.. ""'-r-.
~~E_=.. 1~ v
'" '
--- "
VCE-
~/.,'"
lV
10
COLlECTOR CURRENT IN rnA
1.0
VBE (saI) AS A FUNCTION
OF COLLECTOR CURRENT
500
UJ
!:;
51
I
400
;;;
~=E:1Ic
51z
UJ
~
1.1
Ue=O.1Ic
51z
300
V
Q
OJ
~
t;:
/
200
a:
t;:
a:
UJ
I-
'=
:;
1.0
0.1
0.7
:l:
-I-
~
()
o
10
-
UJ
...
100
0.9
OJ
V
UJ
r±
~
100
0.5
500
,/'
100
Dwg. No, A-14,1I4
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
1.3
I
1.1
Z
9
a:
UJ
W
~
0.7
0.5
1.0
_I""
- .
8.0
:-- r-.
;;;
UJ
()
z
~
~
1l
i5
tiz
/
UJ
'=
:;
'Ii
V"~-5~ /1/
0.9
I-
10
/ ,
~
51
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
~cJl~
UJ
UJ
v.
.. ~/
;.'--
VeE = -10V
6.0
4.0
~
-
--- --- -- . .
~
..................
2.0
10
500
COLLECTOR CURRENT IN rnA
DWJ. NO, A-14,1I6
!:;
/
~i-'
10
1.0
0.1
COLLECTOR CURRENT IN rnA
51;;;
I
1.3
E
'=
:;
100
Owg No. A-14,112
;;;
a:
~
,
\
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
~a:
,
\
Dwg, No. A-14,1I3
~
,
\
;'
COLLECTOR CURRENT IN rnA
>
."
200
100
500
V .'
.' .
~ .. ..
",~
ji
0
\ \
50
./
0
\
0.01
500
0
1---
110V
1,""'-
I-
'H~r--~
VCE=:::..,l V
~.
100
V,,~
600
100
a
0.1
500
"
- ............
Owg. No. A-I4,1I5
4-33
CoO
-'1
1.0
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
I'r- ..... -
Coo
10
20
PROCESS BXE
Process BXE
PNP Small-Signal Transistor
Process BXE is a double-diffused PNP epitaxial
planar silicon transistor designed for use in generalpurpose amplifier and switching applications. Its
NPN complement is Process FEE.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 200 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
BXE
o.rn~xo.rnr
ALTERNATE PROCESS: SLL
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Ic=10mA
Min.
60
Limits
Typ.
Max.
100
V(BR)EBO
IE= 1O fLA
6.0
8.0
-
V
V(BR)CBO
Ic=100fLA
80
115
-
V
ICBO
VcB =60V
-
-
100
nA
lEBO
VEB =5.0V
-
-
100
nA
VcE =5.0V, Ic=0.1 mA
VCE=5.0V,lc=1.0mA
VCE = 5.0V, Ic = 10mA
Ic=10mA,IB=1.0mA
Ic=50mA,IB=5.0mA
Ic=50mA,IB=5.0mA
-
VcE =5.0V, Ic=1.0mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
VCE=5.0V,lc=10fLA,
Rs =10kH, BW=10Hz-15.7kHz
100
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
VBE(Sat)
hFE
fT
CCb
Ceb
NF
Test Conditions
4-34
-
-
-
220
220
220
0.07
0.14
0.9
200
1.8
7.2
0.5
4.0
16
3.0
Units
V
-
-
-
-
0.3
0.5
1.2
V
V
V
-
-
MHz
pF
pF
dB
PROCESS aXE
Typical Characteristics
at TA = + 25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
I'
200
"c-
-- -
F"" _
F=:
v:
/.
'"
U
:J
VCfc.=-
sv
0
0<
,
0
300
'"
200
g:
IJL_)
150 1-++++t+ltt--+-,fffi-Hll--+++fllttI-I--H+H+++-+++++"H\I---1
100
_~lJv
400
0
:<0
z
~f++I+jfl-+-l-++H+Jj---+-++HHlff--+ ++fjjjjf-+-lrf+l+lH1.M
\
V
/ "
""
-- -
5V
"
,
, ,
-,'
........
VeEi
"
""' ..
i'.
I
\V CE = -1 V
\
p.'
~
z
501-++++t+ltt--+-'fffi-Hll--+~fllttI-I--H+H+++-++~~\~
-'
.... - ......
\
,,
,,
,
,
100
r-.\
0.01
0.1
10
1.0
100
10
100 200
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
OW]. No. A-13,759
DW} NO. A-13,761
VSE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
10
if>
':;
£2
'"
";;;
w
£2
09
z
08
"
07
Q
cr
:J
"IE
":geli
if>
cc-
U!
06
05
01
No, A-13,762
DWj. No. A-i3,763
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VSE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
':;
0.9
'"
VCE =
w
";;;
£2
0.8
0
cr
07
to
~
as
w
~
-sv
1>
,
F---- r-2::
-- --- --
,
,,
,, /
CoO
/
- -,
-~
y
Z
i"
0
IDlJv
if>
£2
I-" r--
k -~
~ .....
VCE = -10V
""',~
"
'-
i'
o
100
01
200
1.0
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
DWJ. No, A-13.764
4-35
,
r-.
2.0
0.6
10
200
COLLECTOR CURRENT IN mA
D~
1.0
100
10
1.0
COLLECTOR CURRENT IN rnA
10
20
PROCESSDAC
Process DAC
NPN Small-Signal Transistor
Process OAe is a double-diffused NPN silicon epitaxial planar device. It is designed for use in highcurrent switching and general-purpose amplifier
applications.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 800mA
Operating Junction Temperature, TJ • . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
CAe
0.024" x 0.024"
ALTERNATE PROCESS: JLA
ELECTRICAL CHARACTERISTICS at TA =
+ 25°C
Ic=10mA
Min.
60
Limits
Typ.
Max.
100
-
V(BR)EBO
IE= 1O IJ.A
6.0
7.3
-
V
V(BR)CBO
Ic=100~
120
200
-
V
ICBO
VcB =100V
-
-
100
nA
lEBO
VEB =6.0V
-
-
100
nA
-
VBE(Sat)
VCE=5.0V,lc=1.0mA
VcE =5.0V,l c =100mA
VcE =5.0V,l c =500mA
Ic =100mA,I B=10mA
Ic =500mA,I B=50mA
Ic =500mA,I B=50mA
fT
COb
Cib
VcE =5.0\l, Ic=50mA
VcB =10V, f=1.0MHz
VEB=0.5\1, f=1.0MHz
150
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
COllector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
hFE
Test Conditions
4-36
80
20
-
180
190
60
0.07
0.23
0.95
300
6.0
50
Units
V
-
-
500
-
0.25
0.75
1.2
V
V
V
-
MHz
pF
pF
20
80
PROCESS DAC
Typical Characteristics
at TA = +25°C
It AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
300 r-TrTTTTTITr-T--n-mm-rOTlllTTr---'-TTTTTTIr---rn-nmr-'--'"TTrnTI
r--t++ttfffl-t-H+ttttt-t+t+t+I+-+++tt+!tI-+-1II-++H-!Jt-111+-++H+lII
250
~
'"
v,lcJmll,-vc, "5V
Cl
Ill"..~.::<:I'lflnr""
iil"-
H~~~~fmlI""4·-I+lW--+WIW---1-W-W+1ll----l'\l'JI.jjjji
150
Iv'
\ '
to
~
~
0.01
0.1
10
10
100
200
...r- ~
100
o
O~~Will~~Will-L~~-LLWlliL-LUilillL~~
V
--
t::-• .-
~i-'"
"
Vce=1 V
100
10
1.0
1000
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Dwg. No, A-13,766
Dwg. No. A 13,769
w
VBElsal) AS A FUNCTION
OF COLLECTOR CURRENT
VeElsal) AS A FUNCTION
OF COLLECTOR CURRENT
~
1.1
500
UJ
;;;
II
w
'i="!i
40d
~
300
~
15
:::>
I,
B =O.1I c
10
~
is'z
0.9
t<
a:
:::>
200
a:
~
1/
d:
100
0
III
I Is=O.1Ic I
1/
0.8
t<
UJ
II
ill
~
"
Q
a:
~
;;;
w
is'
I
t<
UJ
~
Vce-5V
-"",,,,,,,,,
z
"'"
0.001
300
I
H-+++++HI-+-++fjjjjf-++++++lIl--+++!-fHlI-+VI-I"-I+~jjj'vf--\!J-l''J!'I-I+llI
100
~
to
:::>
Hr-ttffiltH-itHffil-t-H1I:::i-ffi!l:frnlffi!/:.~..tttltll
200
400
<;
V
07
to
~
~
w
V
10
10
100
V
0.6
V
05
0.1
1/
1000
0.1
10
10
100
1000
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN mA
DWJ. No., A-I3,768
DI'\lg No. A-13,767
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(DN) AS A FUNCTION
OF COLLECTOR CURRENT
50
r- t---..
-...._- .. -- ..
10~--4--+---~'~'~~~~~+-~+H4+-~
....................
°OL.,--~--L-LJ~~,L.O--~--L-~-LLU~1O--~20
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
OW]. No, A-13,765
Dw::J. No, A-13,770
4-37
PROCESS DCA
Process DCA
NPN Small-Signal Transistor
Process DCA is a double-diffused NPN silicon epitaleial device. It is primarily used in general-purpose
amplifier and medium-power switching applications.
Its complement is the PNP Process DDA transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -55°C to+150°C
DCA
0.019" x 0.019"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
20
Limits
Typ.
Max.
55
-
V(BR)EBO
IE= 1O Il-A
B.O
7.1
-
V
V(SR)CBO
Ic= 1OOll-A
70
110
-
V
ICBO
Vcs=BOV
-
-
100
nA
lEBO
VEB=B.OV
-
-
100
nA
-
150
1BO
150
0.1
0.3
1.0
-
-
BOO
-
0.3
0.75
1.2
V
V
V
250
300
4.0
24
10
13
200
24
8.0
30
10
25
225
BO
MHz
pF
pF
ns
ns
ns
ns
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time*
Rise Time*
Storage Time*
Fall Time*
VBE(Sat)
VCE=1.0V, Ic=0.1 rnA
VCE=1.011, Ic=10mA
VCE=1.011, Ic=100mA
Ic=100mA,ls=10mA
Ic=500mA,ls=50mA
Ic=500mA,ls=50mA
fT
Ccb
Ceb
td
t,
ts
tf
VCE=10V,lc=20mA
Vcs=10V, f=1.0MHz
VEs =0.5V, f=1.0MHz
Vcc=3011, Ic =150mA,
IB=15mA
Vcc =30V,l c =150mA,
IB1 =I B2 =15mA
hFE
*Switching speeds measured at 2N2222A test conditions.
4-38
50
30
-
-
-
-
Units
V
PROCESS DCA
Typical Characteristics
alTA = +25°C
hFE AS A FUNCTION
OF COLLECTOR CURRENT
250
IT AS A FUNCTION
OF COLLECTOR CURRENT
soo
r-rTTTTTT1r"T"T~TTTTTT7Tr"OOTTTIInr-rTTl
:I"
200 H-H+III1IH-++H+fff-+-+++tfjjj--++++fllI+---l-f+H-HfI-+-I-H
";;;
Ve;"I,W
JLl
4D0
t::l
~t~~~~~~·~·~~··~·~~o~~~~~
150 f--
§
JJ,115v~ .
300
"-
l:
~~
;
b
1IIIi ' ..
~
I
OJ
200
/'
100
l-fo'
.
.# ....
..,
~ -.t-
vrr
"''''
;;
;
o
1.0
--';::±"'~'
10
100
COLLECTOR CURRENT IN rnA
Dwg. No., A-13, m
Ow;!. No. A-13,173
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
w
V8E(sal) AS A FUNCTION
OF COLLECTOR CURRENT
300
II
250
II
11,"0.1Ie 1
11,"0.1Ie
52
is\;:
w
to
w
"Ii:
100
~
0
50
/
/
150
>-
§
V
200
a:
~
1
/
::l
a:
I
1
;;;
~
0
~;
COlLECTOR CURRENT IN rnA
1';
0
-
/
/~
-I-
V
V
(J
o0.1
1.0
10
100
0.5
500
0.1
10
1.0
COLLECTOR CURRENT IN rnA
100
500
COLLECTOR CURRENT IN rnA
DI'.9. No. A-I3.774
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
V8E(ON) AS A FUNCTION
OF COLLECTOR CURRENT
1.1
"'t::;
I
1.0
52
w
~
0.9
~
O.B
VCE=:e 1'.
.'
52
a:
w
~
"W
0.7
w
~
25E---r--
Ve,i",l
;;;
~
0.6
0.5
_r-
i"""
-""'' '
~~!::10V
C.o
.. "' .................... ..
5.0
...
f---+-f--H+H--1-+·-·-'··:'::·~··"I--t....±.c::-.H-+-+-H
?i
1.0
10
100
COLLECTOR CURRENT IN rnA
°0~.,--L--L-L~-LUf'.0~-~~~-L~~'0'
SOO
REVERSE BIAS IN VOLTS
Dwg. No. A-13,716
Dwg. No. A-t3,772
4-39
PROCESS DDA
Process DDA
PNP Small-Signal Transistor
Process DDA is a double-diffused epitaxial planar
silicon PNP transistor. It is designed for use as a lownoise, high-gain amplifier or as a medium-power
switch. Its complement is the NPN Process DCA.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
DDA
0.019" x 0.019"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Limits
Characteristic
COllector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Cu rrent
Transfer Ratio
Typ.
Ic=10mA
Min.
30
50
Max.
-
Units
V
V(SR)ESO
IE=10jl.A
6.0
8.0
-
V
V(SR)CSO
Ic =100jl.A
30
60
-
V
Icso
Vcs=30V
-
-
100
nA
IESO
VEs =6.0V
-
-
100
nA
VcE =5.0V, Ic=0.1 mA
VcE =5.0V,l c =10mA
VcE =5.0V,l c =100mA
Ic=100mA,ls=10mA
Ic=500mA, Is=50mA
Ic=500mA, Is=50mA
-
-
-
VcE =10V,l c =20mA
Vcs=10V, f=1.0MHz
VEs =0.5V, f=1.0MHz
Vcc = 30 V, Ic=150mA,
Is=15mA
Vcc= 30V, Ic=150mA,
lSI = IS2 = 15 mA
150
Symbol
V(SR)CEO
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time*
Rise Time*
Storage Time*
Fall Time*
VSE(sat)
fT
Ccb
Cab
td
t,
ts
It
Test Conditions
..
'Swltchmg speeds measured at 2N4403 test conditions.
4-40
30
30
-
-
-
140
210
210
0.1
0.35
1.1
370
5.0
20
5.0
13
150
25
660
0.4
0.75
1.3
V
V
V
-
MHz
pF
8
30
15
20
225
30
pF
ns
ns
ns
ns
PROCESS DDA
Typical Characteristics
at TA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
300
SOD
~~
250
N
:r:
'"
VCE = - 5V
-1"11 ilL.,
/'
.' .
200
.' .
V
150
/'
....
Hm
~.
..
....
~CE'-=- -IV
I
k
\
>u
::>
0
0
300
c:
.
0-
:r:
>0
li0
200
z
I
'z"
\
:;:
50
.
400
~
~
"
100
C)
a
0.001
0.01
10
0.1
500
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
OW]. No, A-13,780
VBE(satl AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
>
~
g
'"g':J
;;
w
300
11,~0.1Ic
~
C)
I
~
i1
f?
~
I--
I:i'
c:
'"
""t:
1I
V
0.9
V
I-
;,~
~'
,..-f.-
*
500
100
VI--
V
0.7
'"
L..10
I
I:i'
u
1.0
B =O.1I c
z
II
100
II
Q
::>
t::
11
g
/
200
>-
d:
i§
1/
I:i'
c:
'"c:w
VI-
I
10
1.0
Dwg. No. A-13,782
DW';l. No. A-13,781
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
0
3
II
5
1. I
a
~ r-.
vIC'~lly
0.9
,..,.,...,F
0.5
500
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
~
I
13
400
E
~
1.0
-
~
...
-
10
5
~j:
-
I--~'::'-a
_.i:;:- -'
-
-
V CE -
10V
a
100
a
0.1
500
COLLECTOR CURRENT IN rnA
--. . . .
'" "1'--.
...............
'"
1'-..... -.....
1.0
REVERSE BIAS IN VOLTS
- .. - ..
10
20
D'M3. No. A-13,777
Dv.g. No. A-13,778
4-41
PROCESS DFC
Process DFC
PNP Small-Signal Transistor
Process DFC is a PNP silicon double-diffused epitrudal planar device designed primarily to be used in
medium-power amplifier and switching circuits.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 800 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -55°C to+150°C
DFC
0.027" x 0.027"
ALTERNATE PROCESSES: BFA, JMA
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Ic=10mA
Min.
50
Limits
Typ.
Max.
90
V(BR)EBO
IE= 1O !LA
6.0
8.2
-
V
V(BR)CBO
Ic = 100 !LA
80
110
-
V
ICBO
VcB =70V
-
-
100
nA
lEBO
VEB =5.0V
-
-
100
nA
-
250
260
220
0.09
0.29
1.0
-
-
-
-
VBE(Sat)
VCE=1.0V,lc=1.0mA
VCE=1.0V, Ic=10mA
VCE = 1.0V, Ic = 100mA
Ic=100mA,IB=10mA
Ic=500mA, Is=50mA
Ic=500mA; Is=50mA
fT
CCb
Cob
VcE =5.0V, Ic=10mA
VCB=10V, f=1.0MHz
VEB=0.5V, f=1.0MHz
150
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
hFE
Test Conditions
4-42
-
-
-
250
7.3
42
Units
V
0.30
0.75
1.2
V
V
V
-
MHz
pF
pF
15
55
PROCESS DFC
Typical Characteristics
at TA = + 25°C
It AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
~
400
TIm
VCE--
j
300
..L..............
,/ - - I
~--
~
100
-:: ~.
Vee"'- --5V
--..:.::...:::t
~i
1v
l-
10
1.0
100
--,
I
10
1000
'.
Ii
..
i
0.1
0.01
t
I---
; / /"
--.,.
I
i
200
··1]11
!
I
10::""-
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN mA
Ow;]. No. A-13,785
Ow;]. No. A-13,783
VBElsal) AS A FUNCTION
OF COLLECTOR CURRENT
VCElsal) AS A FUNCTION
OF COLLECTOR CURRENT
300
I
250
I11111
1-'
IIB~·O.1lc I
I
i
I
II
I
200
II
150
I
I
/
,
100
50
I--V'
10
100
10
500
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN mA
D.'g. No. A-13,787
DVII]. No. A-13,786
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBEION) AS A FUNCTION
OF COLLECTOR CURRENT
1.3
60
I
I
50
II
1.1
I
I ,
I
0.9
I
I
07 f -
~
1-'''''
I !
I
I
I
i
;'
"l2r-
vrr~
~ccc
~~.. ~~
V
CE =
,
40
30
II
r-- t--. r-I'...............
".
'
..,
i I
I
,~
'r " "
CCb
20
-10V
i--' r--
......
i
'" i'-i'
"
i
'" ,
,
,
10
.......
i
10
100
1.0
1000
10
20
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dwg. Noo A-13,784
Dwg. No. A-13,788
4-43
PROCESS DID
Process DID
NPN Small-Signal Transistor
Designed for general-purpose switch and amplifier
applications, the Process DID NPN transistor operates at collector currents of up to 1A. This doublediffused silicon epitaxial planar device is half of an
NPN/PNP pair complemented by the Sprague Electric Process DJC transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ...................... 1000mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
DID
0.030" x 0.030"
ALTERNATE PROCESS: YCA
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Ic= 10mA
Min.
70
Limits
Typ.
Max.
95
-
V(BR)EBO
IE = 10 r-tA
6.0
7.1
-
V
V(BR)CBO
Ic=100r-tA
90
150
-
V
ICBO
VcB =80V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
VcE =5.0V,l c =10mA
VcE =5.0V,l c =100mA
VCE = 5.0V, Ic = 500mA
Ic =100mA,I B=10mA
Ic=500mA, IB=50mA
Ic =100mA,I B=10mA
-
300
310
280
0.05
0.15
0.76
-
VcE =5.0V, Ic=100mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
150
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
hFE
Base-Emitter
VBE(Sat)
Saturation Voltage
Gain-Bandwidth Product fT
Output Capacitance
COb
Input Capacitance
Cib
Test Conditions
4-44
50
-
-
-
280
8.0
100
Units
V
-
-
0.2
0.5
0.8
V
V
V
-
MHz
pF
pF
400
30
150
PROCESS DID
Typical Characteristics
alTA
=
+25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
500
l!
400
'"
C!J
300
:-:-::-
f-
m
a:
()
- -m b ,
v~! e5J~
,-
:,::"
a:
:0
'"
¢-
200
400
;;:
VcE ,010V
l'
z
f-
()
:0
0
~
1
I
f0
\
:::
300
200
Id-'
z
0
~
II
o
0.001
001
0.1
10
z
rn
100
10
'"
C!J
rt:
100
~
-~-H+
Tm
- --. .1111
\VCE= 1 V
II
o
100
10
1.0
1000
100
#'
--
---
0
()
~~
__
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Dwg. No. A-13,789
VBE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
1.2
400
300
10
I,a --D.l' e I
Ila =O.1I c I
0.8
200
V
V
100
~j..0.6
17
k--
./
o
04
01
10
10
100
10
10
0.1
1000
100
DIIII;l No.
DW]. Noo A-13,792
A~13,
791
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
1.2~~~11111
100
1.0
1000
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
f..---+-+-++-H+f+--+-++-l-4++++---l--l-H+++I-
t-- t---..
80
~-t-+-I-I-++IH-i'-..~~t-+-I-I-++H-+--
60
I--+-++++++i+--+-+t-....~H++t+---
'!'--
- .......... ..
.. .... ·COb
OL-_~-L~~LU~_~_~LJ-LLU~~
0.1
1.0
10
20
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Ow;]. No. A-13,790
DWj. No.
A~13,793
4-45
PROCESS DJC
Process DJC
PNP Small-Signal Transistor
Designed for general-purpose switch and amplifier
applications, the Process DJC PNP transistor operates at collector currents of up to 1A. This doublediffused silicon epitaxial planar device is half of an
NPN/PNP pair complemented by the Sprague Electric Process DID transistor.
0.0040
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ...................... 1000 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
DJC
0.030" x 0.030"
ALTERNATE PROCESS: YDA
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
60
Limits
Typ.
Max.
105
V(BR)EBO
IE=10J!..A
6.0
8.3
-
V
V(BR)CBO
Ic =100J!..A
100
140
-
V
ICBO
VcB =100V
-
-
100
nA
lEBO
VEB =6.0V
-
-
100
nA
-
150
160
145
0.075
0.23
0.9
100
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Satu rati 0 n Vo Itag e
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sat)
VcE =5.0V,l c =1.0mA
VcE =5.0V, Ic=100mA
VCE=5.0V, Ic=500mA
Ic =100mA,I B=10mA
Ic =500mA,I B=50mA
Ic =500mA,I B=50mA
fT
Cob
Cib
VcE =10V, Ic=50mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-46
50
25
-
-
-
220
13
100
Units
V
-
-
500
-
-
-
0.2
0.5
1.1
V
V
V
-
MHz
pF
pF
30
110
PROCESS DJC
Typical Characteristics
at TA = +25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
300
250
l'
200
VCE =
~
t:
Z
"
CJ
150
o·
IZ
UJ
0:
0:
::>
a
a
a
::J
if
G:
0:
G:
\:
Vce=5V"
~
~
(!)
200
",
~
",
V,,
,
/V
100
:t
0.7
~
10
1.0
0.8
V~
t::
:;
-I-a0.1
a:
~
100
0.6
200
;....- .-0.1
1.0
10
COllECTOR CURRENT IN rnA
COLLEC1DR CURRENT IN rnA
100
200
Dwg. No. A-13.803
Dwg. No. A-I3,804
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
1.2
UJ
':l
52
1.1
/,
i!:
w
~
1.0
Z
0.9
52
P
V,'
VCE=1~ ~ --I ....
a:
w
t-
t::
:;
0.8
:t
~
0.7
0.6
~
1.0
,.,...,s ~ ~-
-
~
~
b/
, ,
Vce=5V
~
Vce=10V
100
__
-- --
~
/
~:.::: 1--
10
...........C'"
1.0 1-'-C=:--"'--~_~:-1_-H--+-iH-1-1--""--d---I--I-H++-N
05
__ <:_ ""1'----
t----t--t--t-t-t-H-IH------t------H--"f-.H-+-t--H
°0~.1--L--L-L~LLLU1.0~-~-i-i-L~~10
200
COLLECTOR CURRENT IN rnA
REVERSE BIAS IN VOLTS
D~(]
No. A-13,802
Dwg No A-13,8OS
4-49
PROCESS DMA
Process DMA
NPN Small-Signal Transistor
Process DMA is a double-diffused NPN silicon
epitaxial planar device designed for use in VHF and
UHF amplifiers, mixers, and oscillators.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ........................ 50mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Tg ..... - 55°C to + 150°C
DMA
0.015" x 0.015"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
15
Limits
Typ.
Max.
27
V(BR)EBO
IE= 1O f1A
5.0
5.7
-
V
V(BR)CBO
Ic=100f1A
30
45
-
V
ICBO
VcB =30V
-
-
100
nA
lEBO
VEB=4.0V
-
-
100
nA
-
-
600
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(s.t)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(S.t)
VCE=1.0V,lc=0.1mA
VCE=1.0V,lc=10mA
VCE=1.0V,lc=50mA
Ic= 10mA, IB= 1.0mA
Ic =50mA,I B=5.0mA
Ic =10mA,I B=1.0mA
fr
CCb
Ceb
VCE = 10V, Ic = 10mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-50
30
20
-
-
-
120
120
50
0.09
0.28
0.85
900
0.7
0.9
Units
V
-
-
0.4
1.0
1.0
V
V
V
1.7
2.0
MHz
pF
pF
300
PROCESS DMA
Typical Characteristics
alTA
=
+25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
200
1200
:\'
150
VCE~
-
I-
U
:J
~
'1TI
I-
100
..
1000
~
tL
I
b
VCE=sv----"
il iI '
cE =1
z
v
;ii
""
J',\
V~
200
V
0.1
1.0
VCE=1
100 200
,,
,
'~,
I
I
100
10
1.0
COLLECTOR CURRENT IN rnA
,
'- ,
,
v\
,
II
I
0.01
,
400
Z
0
/.\,
,VcE =5V\
.;'
/1
600
:::0
IIV
0
0.001
Vc;r--,.
800 f-.---
0
''- ,
.--
j...--
"
<;
10V
COLLECTOR CURRENT IN rnA
Dwg. No. A-13,808
DWj. No. A-13,811
VBE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
2
0
0
II
B =O.1I c
/
II
I
.1
II
I
II
I
B =O.1I c
I
0
V
9
0
V
8
0
V
10
V
V
V
\-100
10
O. 6 0.1
200
1.0
100
10
Owg, No. A-13,81O
Dw;), No. A-13,809
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
20
2
if)
g':J
III
1
Jc;lj»,
<;
w
"i3g
z
0
1. 0
VcE =5V
,
o. 9
0:
w
l-
e
ai
w
~
o. 8
7~
o. 6
200
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN rnA
1.0
~~
~
-
:,;:"-
~~
--- ,.Vc
10
"~
<;
w
r-- t- t - j -
z
~
/1/
/
u
If
1\z
§z
E=1OV
~
100
1.5
u
1.0
...............
---
-"
................
r-t--r--.
..........
---
0.5 I---+-+-+-H+l--H----+--~---=~- CoO
°0~.,--L--L~-L~jJ,~.0--~~-~-LLLL,0
200
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dw:]. No. A-13,BI2
Dwg, No. A-13,807
4-51
PROCESS DSA
Process DSA
NPN Small-Signal Transistor
Process DSA is an NPN silicon double-diffused
epitaxial planar device designed for use in highcurrent, high-frequency applications.
ABSOLUTE MAXIMUM RATINGS
ColiectorCurrent, Ic ...................... 1000mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
DSA
ELECTRICAL CHARACTERISTICS at TA =
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
0.024" x 0.026"
+ 25°C
Ic=10mA
Min.
40
Limits
Typ.
Max.
90
-
V(BR)EBO
IE= 10ILA
6.0
9.0
-
V
V(BR)CBO
Ic= 100ILA
140
220
-
V
ICBO
VcB =140V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
-
140
150
100
0.07
0.21
0.97
-
-
-
-
100
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(sat)
VCE=5.0V, Ic=1.0mA
VcE =5.0V,l c =100mA
VcE =5.0V,l c =500mA
Ic =100mA,I B=10mA
Ic=500mA, IB=50mA
Ic =500mA,I B=50mA
fT
CCb
Ceb
VcE =5.0V,l c =50mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-52
80
20
-
130
5.0
50
-
Units
V
0.25
0.75
1.2
V
V
V
-
MHz
pF
pF
20
80
PROCESS DSA
Typical Characteristics
at TA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
200,----------,-----,----,--,--,--,-,-"
250
150
..,.
-.
--
F='
~
150
~
______ =.::- ----------- v~;~5v -- -- ~---"-~100 f----------+------j-----l-c'''''''=+--+-+--+--1
~
VcE =10V
\'
"-
~
V" =5V
1IIIIi \'
100
f----------+------j-----t--v,,~10v-t-+-+-H
t
VcE =1V
~
\i~'~'= 1 V
~
z
"
50
0
I
l!
200
50f----------+------+----f-~--+_-+_+-+~
(!)
0.001
0.1
0.01
10
100
10
1000
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN mA
Dv.g. No. A-13,814
Owg, No. A-D,818
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
>
VBE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
1.2
400
E
<;
~
g
Ils=O.1Ic
300
IIB=O.1I c
z
Q
I
0:
a:
0:
0.9
ffi
f2
/y
200
0.8
tt-
'~"
I
1.0
::J
if>
II
1.1
II
100
/
&l
:J
V-
0.7
........... 1--
06
0
:;.--
u
10
1.0
0.5 01
1000
100
1.0
COLLECTOR CURRENT IN mA
100
10
100
COLLECTOR CURRENT IN rnA
Dw;!. No, A-13,816
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
1.2
II !I
1. 1
l;,~l ~
1.0
VcE =5V
,
~
~
,
z
f'5
0.9
0.7
0.6
-
_r
~
l
'A ' VCE=
10V
13
§
z
~
~
10
100
-r-
~ 40f---4-__+__+-++++H~--~d-__+__+-++++Hf-~
1'---......
/" ' I
0.8
60:---
15
c~
20f---~~_+-+++tH----+_--+_+-++++Hf_~
----_ ..
-........... ..
-- ..........
...... ......... ......
10
1000
..
---CCb
10
20
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Dwg. No. A-13,813
D\i\9. No, A-13,817
4--53
PROCESS OVA
Process OVA
NPN High-Voltage Transistor
Process OVA is a double-diffused epitaxial planar
NPN silicon device designed primarily for use in
video circuits and other high-voltage, low-circuit
applications.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
OVA
0.034" x 0.034"
ALTERNATE PROCESS: BLA
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Ic=10mA
Min.
200
Limits
Typ.
Max.
300
V(BR)EBO
IE=10f.l,A
6.0
9.0
-
V
V(BR)CBO
Ic= 100f.l,A
220
360
-
V
ICBO
VcB =200V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
-
-
-
-
-
VBE(sat)
VcE =10V, Ic=1.0mA
VcE =10V,l c =10mA
VcE =10V,l c =50mA
Ic =10mA,I B=1.0mA
Ic=50mA,IB=5.0mA
Ic =50mA,I B=5.0mA
fT
CCb
Ceb
VcE =10V,l c =10mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
hFE
Test Conditions
4-54
25
20
-
40
-
80
95
100
0.06
0.07
0.75
80
5.6
100
Units
V
0.12
0.16
1.00
V
V
V
-
MHz
pF
pF
20
150
PROCESS OVA
Typical Characteristics
alTA = +25°C
IT AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
130
~
110
"
VCE-~
;<;
~
I
\
75 ~~+ttt\H4+fttljjp6,·'f+j-l+Hl--++++I\HI-~u.Hrtlll-'r-\f.I+-\i
..
90
~.
, '
70
1"-.......
"-
~
~
I
501-'"
\
!
\
25~~~~.4+~-++H~-+~~~v~C~'~~')'~'v\~~\
~
IIIIIII
0.01
0.1
1.0
10
100
l4'i4' '
~
30
A'
~
1\
- ...
1\
\I
Vce=5V\
I
I
\
"
50
v.... V
~....
I
I
\
Vce=1V\
V
100
10
500
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
DViYo No. A-I4,,066
Owg. NO. A-I4,070
VBE{sa!) AS A FUNCTION
OF COLLECTOR CURRENT
VeE{..!) AS A FUNCTION
OF COLLECTOR CURRENT
1.0
"'b
II
!i!
~
11,~0.1Ic
~
I
!i!
/
~
~
'"
~
1'--1-
10
1.0
100
11,~0.1Ic
I
1/
0.8
V
t;:
-I-
o01
0.9
*
500
COLLECTOR CURRENT IN rnA
07
V
..,/f-06
Vf-o. 5
0.1
1.0
10
COLLECTOR CURRENT IN rnA
Dwg. No. A-14,067
500
100
Dwg. NO, A-I4. 068
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE{ON) AS A FUNCTION
OF COLLECTOR CURRENT
1. 0
9
,I.! ].I
V[:,e
,
8
VC'-5~/J
~~-:VcE=10V
7
_l-- I-i--
6
J....-
""
-- ................
.5
1.0
100
10
COLLECTCR CURRENT IN rnA
..
..
- .. - .... eel)
°0~.1--~--~-L~Uf1.0~~--~~~~10~~20
500
REVERSE BIAS IN VOLTS
Dwg. No. A-14,065
01111, fob. A·14,069
4-55
PROCESS FAA
Process FAA
PNP High-Power Transistor
Process FAA is a double-diffused epitaxial planar
PNP silicon device designed as a high-speed. highcurrent switch and for use in other high-power
applications.
ABSOLUTE MAXIMUM RATINGS
Collector Current. Ic ......................... 3.0A
Operating Junction Temperature. TJ • . . . . . . . . . + 150°C
Storage Temperature Range. Ts ..... - 55°C to + 150°C
FAA
0.045" x 0.049"
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
60
Limits
Typ.
Max.
100
-
V(BR)EBO
IE= 1O fLA
6.0
8.6
-
V
V(BR)CBO
Ic= 100fLA
80
110
-
V
ICBO
VcB =80V
-
-
1000
nA
lEBO
VEB=5.0V
-
-
1000
nA
-
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(sat)
VcE =5.0V, Ic=100mA
VCE=5.0V, Ic=1.0A
VcE =5.0V, Ic=2.0A
Ic=500mA. IB=50mA
Ic=1.0A.IB=100mA
Ic=1.0A.IB=100mA
fr
CCb
Ceb
VCE=5.0V.lc=100mA
VcB =10V, f=1.0MHz
VEB=0.5V. f=1.0MHz
hFE
4-56
-
-
-
60
-
Units
V
-
-
-
-
85
90
80
0.13
0.23
0.97
0.5
0.75
1.5
V
V
V
130
40
300
120
1000
MHz
pF
pF
-
PROCESS FAA
Typical Characteristics
alTA = +25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
120
200
IIII
'00
eo
Ve,
--- -- - --- -- -
-::+: -
f:"-
VL-5~-
60
----l\
"
,---/~\
§c.
"
b
3:
"
~
lL,\
40
I
I
I
I
!
I
\
""'
20
0.1
150
ti::>
\
0.01
Vve'~-Iv
l"
10V
100
v
/
/' ,
I
100
1000
VSElsal) AS A FUNCTION
OF COLLECTO!'! CURRENT
2.5
U)
>::;
1200
§2
§2
11111
~
~
UJ
11111
2.0
~
la=~
~
§2
900
5
!:;:
~
a:
~
a:
~
"~
0.1
0.5
~
~
0.01
/
1.0
I::
v
~
I
::>
/
300
1.5
a:
'/
600
"
-I-
-
5.0
'.0
0.1
0.01
COLLECTOR CURRENT IN AMPS
'0
1.0
COLLECTOR CURRENT IN AMPS
0\\90 No. A-J3,824
0\\9 No. A-I3,823
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VSEION) AS A FUNCTION
OF COLLECTOR CURRENT
2.5
2.0
VeE=
UJ
~
5a:
'a
-iv , l
//
I
I
~
§2
400
JUL
U)
>::;
§2
,
Dwg. No. A-13,822
1500
UJ
~
'
I
819
E
UJ
VeE= -5V
COLLECTOR CURRENT IN rnA
A~13.
~
!:;
---J- --
", "
50
VeElsal) AS A FUNCTION
OF COLLECTOR CURRENT
~
a:
..............
"
1.0
'.Iw;J. No.
~
,,
""
COLLECTOR CURRENT IN AMPS
>
V. . .
1'\
1.5
~
1.0
~
0.5
~r
~
~
1l
~
1.0
100
o0.1
10
COLLECTOR CURRENT IN AMPS
~
200
5
VCE =- 'oV
~
D.'
F--- r-
"
~
0.0'
300
UJ
C~
........
-.......... --
- - ............
"- .....
--l- -- - ........
1.0
10
20
REVERSE BIAS IN VOLTS
011\1. No. A-IJ,820
Dwg.
4-57
N~ A-I~821
PROCESS FBB
Process FBB
NPN High-Power Transistor
Process FBB is a double-diffused epitaxial planar
NPN silicon device. It is designed for use in power
amplifier and switching circuits.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ......................... 5.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
FBB
0.076" x 0.076"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Ic= 10mA
Min.
60
Limits
Typ.
Max.
100
-
V(BR)EBO
IE=10j.1A
5.0
7.5
-
V
V(BR)CBO
Ic= 100j.1A
150
220
-
V
ICBO
VcB =150V
-
-
1000
nA
lEBO
VEB=5.0V
-
-
1000
nA
-
-
95
95
95
0.08
0.14
0.86
-
VBE(Sat)
VcE =5.0V, Ic=100mA
VCE=5.0V,lc=1.0A
VCE = 5.0V, Ic = 2.0A
Ic =500mA,I B=50mA
Ic =1.0A,I B=100mA
Ic=1.0A,IB=100mA
0.5
0.75
1.2
V
V
V
CCb
Ceb
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
-
60
960
300
1000
pF
pF
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Output Capacitance
Input Capacitance
hFE
Test Conditions
4-58
-
-
Units
V
-
-
-
-
PROCESS FBB
Typical Characteristics
al TA
=
+ 25°C
hFE AS A FUNCTION
OF COLLECTOR CURRENT
120
100
~
z·
"ill
1.5
1000
E
11
<;
!
w
III
('J
i'l
g
z
~
Q
t;:
a:
r-
600
::>
B
I
I
--
I
!ll
J.
II =O.11c I
800
1
1/
I
t;:
en
f5t-
l=
"'a:"
f"
1rl
/
I
400
II
200
7
~
l-
0
0.01
0.1
1.0
10
1.5
111111
~
I11111
I
I
I
1.3
w
"
u
~
1l
600~-+-4-4++++H--4--+~~+++H----
§
V E=10V
I
~ 300~-4--+-+++++H--4--+-+++++H----
.....
01
10
L--t--r~
<;
1;1
I
w
r
ice]
,~5Vl--II,
O.g
1.0
0.1
0.01
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
~:
I
;;;
0,001
Ow;]. No. A-13,827
VUE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
Co
i:'COLLECTOR CURRENT IN AMPS
COLLECTOR CURRENT IN AMPS
en
0.5
--- ......
1.0
-- ..
..
-- ..CoO-- ..
- ....
oOL.1---1--'---'--LL.LLLJ1.CCO----'-.L..L.LL.LLU10C-----c20
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN AMPS
Dwg. No A-I3,826
4-59
PROCESS FCB
Process FeB
NPN High-Power Transistor
Process FeB is a epitaxial planar NPN silicon transistor. It is designed for use in high-power amplifier
and switching circuits. Its complement is the PNP
Process FOB transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ......................... 5.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
FeB
0.076" x O.OBO"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Ic=10mA
Min.
50
Limits
Typ.
Max.
90
V(BR)EBO
IE = 1Ofl-A
5.0
7.0
-
V
V(BR)CBO
Ic = 100 fl-A
120
190
-
V
ICBO
VcB =100V
-
-
1000
nA
lEBO
VEB=4.0V
-
-
1000
nA
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Output Capacitance
I!1put Capacitance
VBE(Sat)
VCE=5.0V, Ic=100mA
VcE =5.0V, Ic=1.0A
VcE =5.0V,l c =2.0A
Ic =500mA,I B=50mA
Ic=1.0A,IB=100mA
Ic=1.0A,IB=100mA
CCb
Cab
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
Test Conditions
4-60
-
1BO
1BO
170
0.06
0.1
0.B4
-
60
1000
-
-
-
-
-
-
Units
V
-
V
V
V
pF
pF
PROCESS FCB
Typical Characteristics
alTA
=
+25°C
hFE AS A FUNCTION
OF COLLECTOR CURRENT
250
200
F:':
150
--- --
--
1111I
- --
---
\
~T
\ 1)-~15V
\(1'
100
vJJ
50
o0.001
0.01
0.1
1.0
II
10
COLLECTCR CURRENT IN AMPS
0.,. No. A-ll,8lO
VeE(..t) AS A FUNCTION
OF COLLECTOR CURRENT
VBE(..t) AS A FUNCTION
OF COLLECTOR CURRENT
500
1.2
U)
!:J
52
11111
;;;
UJ
11,=0.1I c 1
~
1.0
V
I Is = O.1tc I
/
52
~
II
a:
-
~
V
t::
":l:
0.6
~
0.1
1.0
-
0.4
10
V ...
-
a:
UJ
I--0.01
o.s
::>
0.01
0.001
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
52
1.0
52
5a:
;;;
UJ
"~
'I
O.s
~
~
§z
VcE =10V
-;;: ...
1'.
t::
0.6
~
0.4
fr:: ..
0.001
r-- r--
'li
h ~rr
,
UJ
":l:
1000
VCE=5V -
~
SOO
600
400
~
.::""
C",
200
0.01
0.1
10
Ow:!. No. A-I3. 833
1200 ,-----,---,--,---,--TTTTT---,--,--,---,--rrrn
JJ
U)
!:J
UJ
1.0
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
1.2
;;;
0.1
COLLECTOR CURRENT IN AMPS
COUECTOA CURRENT IN AMPS OWl. No. A-I3. 832
1.0
00.1
10
COLLECTOR CURRENT IN AMPS
.............. -....... -..
1.0
REVERSE BIAS IN VCLTS
4-61
10
0\\11 No. A-I~ 834
PROCESS FOB
Process FOB
PNP High-Power Transistor
Process FOB is a PNP silicon double-diffused epitaxial planar device designed for use in high-power
amplifier and switching circuits. Its NPN complement
is the Process FeB transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ......................... 5.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, T5 ..... -55°C to+150°C
FOB
0.078" x 0.080"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
60
Limits
Typ.
Max.
100
-
V(BR)EBO
IE= 1O fLA
6.0
7.9
-
V
V(BR)CBO
Ic = 100 fLA
80
140
-
V
ICBO
VcB =80V
-
-
1000
nA
lEBO
VEB=5.0V
-
-
1000
nA
VCE = 5.0V, Ic = 100mA
VCE = 5.0\1, Ic = 1.0A
VcE =5.0V,l c =2.0A
Ic =500mA,I B =50mA
Ic =1.0A,I B=100mA
Ic=1.0A,IB=100mA
-
-
190
200
185
0.09
0.14
0.85
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
-
100
900
Symbol
V(BR)CEO
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Output Capacitance
Input Capacitance
VBE(sat)
CCb
Ceb
Test Conditions
4-62
-
-
-
-
300
1000
Units
V
-
V
V
V
pF
pF
PROCESS FOB
Typical Characteristics
at TA = + 25°C
hFE AS A FUNCTION
OF COLLECTOR CURRENT
300
III
250
vc~~ ~W
~
.
..'
150
- -
..-.. .... . .
200
E--
........
.'
VCE'" 5VD..
~',
,,
\
10 0
\
VcE =-1V\
0
0
0.01
0.001
\
IIIII1.0
0.1
COLLECTOR CURRENT IN AMPS
10
D\\9. No. A-13,839
VBE(satl AS A FUNCTION
OF COLLECTOR CURRENT
VeE(satl AS A FUNCTION
OF COLLECTOR CURRENT
I
16
1000
UJ
_l
800
to
§!
Ifill
11,~Ollc
~
I IIIII
14
II
w
I
~
'3
§!
600
B
=01Ic
I
12
z
Q
""
"
a:
400
10
/
UJ
a:
w
II
200
0.1
0.01
W
~
1.0
COLLECTOR CURRENT IN AMPS
:.-
e
3l
/
°0001
08
l-
0.6
:.04
10
IIII
II
0.1
0.01
1.0
COLLECTOR CURRENT IN AMPS
10
D\\!3. No. A-13,837
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ONI AS A FUNCTION
OF COLLECTOR CURRENT
6
0.001
Dwg. No, A-13,836
IIIIII
II
1.4
1000
i"-.......=c+-+-+-+-!-HI++--+--I-H-++++i
1.2
800
I---+-+-+-H--P!-.l+--+--l-lf---+-+-+-++I
600
e---+-+-+-+-l-HI++--~---1I-H--l--l--I--H
200
1-_-+_+-++-++I-++'_'':::'':'-''",,''~C~cO:.J."".-.H++++i
VClfI(
,
VCE=-]
10
06
F"=F
0.4
0001
001
". .V,,~ ·10V
~j.t
~
~~
4ooe---+-+-+-+-l-HI++--+--II-~~~~+_H
~
{}
08
t---r-t-
--- - .. "
0.1
1.0
COLLECTOR CURRENT IN AMPS
1.0
10
REVERSE BIAS IN VOLTS
OW). No. A-13,838
4-63
.
10
PROCESS FEE
Process FEE
NPN Small-Signal Transistor
The FEE Process results in double-diffused silicon
epitaxial planar transistors intended for use in AM
radio, IF, and converter applications. It also finds wide
use as an audio driver, high-level video amplifier, and
in operational amplifier output stages.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 200 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
FEE
o.m~xo.m~
ALTERNATE PROCESS: BAA
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
=+ 25°C
Ic=10mA
Min.
60
Limits
Typ.
Max.
85
V(BR)EBO
IE= 1O fLA
6.0
8.0
-
V
V(BR)CBO
Ic= 100fLA
80
120
-
V
ICBO
VcB =60V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
-
410
490
530
0.04
0.09
0.77
100
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sat)
VCE=5.0V, Ic=0.1 mA
VcE =5.0V, Ic=1.0mA
VCE=5.0V, Ic=10mA
Ic=10mA,IB=1.0mA
Ic=50mA,IB=5.0mA
Ic=10mA,IB=1.0mA
fT
COb
Cib
VcE =5.0V,l c =1.0mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-64
50
80
-
-
240
1.8
5.5
Units
V
-
-
800
-
-
-
0.2
0.3
0.9
V
V
V
-
4.0
8.0
MHz
pF
pF
PROCESS FEE
Typical Characteristics
alTA = +25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
600
Vc,-
\
a:
"-
;:"
"«z
:i:
'"
«
I
I
100
OJ
~
o
0.001
0.01
0.1
1.0
t:::-
10
"
~ -.#
I-::: ,"
0
J:
t-
200
400
Cl
I
I
I
Vc,~1V \
500
;;:
300
......
~. ...
200
- ",
,
100
\\\
I
\ \
\I
r
VCE=5V
1V
o
100200
'" 1\
1.0
II
100
10
COU.ECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Dwg. No. A-13,M2
E
1.0
250
;;:
w
~
~
0.7
......-
a:
.......
50
~
/
/
'~"
°0.1
10
1.0
.... ....
0.6
~
::l
8
II
~
~
z
II
0.9
Q
~
"
9
~
w
/
z
150
~
L
IrB =o.1Ic I
~
o
100
0.5
200
0.1
10
1.0
COULECTOR CURRENT IN rnA
100
01\9.
':J
0.9
VC'~5v'~.
.,-.'
~
w
~
~
:..-- "
Z
9
a:
w
t-
t::
0.7
'~"
~
'is.
0.6
05
~
1.0
-
,.....
-
8.0
;;:
w
;'
0.8
()
z
~
Vce=10V
6.0
~
.....:::: ~ ~-;;
1'i
z~
:.:::~
-.... -.... --2.0
10
100
--- -
4.0
~
COLLECTOR CURRENT IN rnA
A-13.840
10
Ill!Ivc'~lv
Vi'rn
'""
....
.............
r-...
-............ Cob
00.:--1---l....---L-L.J...J-LL.lJ1.'=-0--L----1--'---l....LJ.JLll.
10-----.J20
200
REVERSE BIAS IN VOLTS
Dwg No. A-13,84j
Ow;! No. A-13,843
4-65
PROCESS FFB
Process FFB
NPN Switching Transistor
Process FFB is a double-diffused epitaxial planar
device with gold diffusion and is primarily used in
general-purpose switching and amplifier circuits.
Process FFB is the complement to the PNP Process
BTB transistor.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 200 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
o.mrxo.mr
FFB
ALTERNATE PROCESS: TVO
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Ic=10mA
Min.
30
Limits
Typ.
Max.
50
V(BR)EBO
IE= 1O fLA
6.0
7.5
-
V
V(BR)CBO
Ic = 100 fLA
60
100
-
V
ICBO
VcB =60V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
VCE=1.0V,lc=1.0mA
VCE=1.0V,lc=10mA
VCE=1.0V, Ic=50mA
Ic=10mA,IB=1.0mA
Ic =50mA,I B=5.0mA
Ic=50mA,IB=5.0mA
-
-
-
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sa!)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figu re
VBE(Sa!)
Delay Time'
Rise Time'
Storage Time'
Fall Time'
hFE
fT
COb
Cib
NF
td
t,
ts
It
Test Conditions
VcE =20V,l c =10mA
VcB =5.0V, f=1.0MHz
VEB =0.5V, f=1.0MHz
VCE=5.0V,lc=100fLA,
Rs = 1kil, BW = 1OHz- 15.7kHz
Vcc =3.0V,l c =10mA,
IB=1.0mA
Vcc = 3.0V, Ic= 10mA,
IB1=IB2=1.0mA
'Switching speeds measured at 2N3904 test conditions.
4-66
50
20
-
250
-
-
-
Units
V
150
155
110
0.06
0.095
0.85
0.2
0.3
0.95
470
2.0
5.0
1.0
4.0
8.0
5.0
MHz
pF
pF
dB
15
12
170
19
35
35
200
50
ns
ns
ns
ns
800
-
-
V
V
V
PROCESS FFB
Typical Characteristics
alTA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
250
600
".
""
150
~'
f0
::J
"J:
f-
1.\
Ve, 1V
50
0.1
10
10
COLLECTOR CURRENT!N rnA
Dwg. No,
;:"
"«z
··
100
400
300
~
>
~
z
~
a:
'"
150
,
~
~
Ils -=O.1I c I
\
~~
II
11
I
1.0
11,~0.1Ie
~
~
a:
~
V
~
LU
0.8
0.7
0.6
W
0
~
0
100
10
COLLECTOR CURRENT IN rnA
V
z
100
1.0
I
0.9
.........-
::J
50
100
o
f-
~
\1
\
100
LU
=--1-
Vce-' 1 V
OW]. No, A-14, \18
LU
"~
\
\
122
~
a:
to
,
\
VBE(sa') AS A FUNCTION
OF COLLECTOR CURRENT
::J
en
\1'
I
I
200
'.
10
COLLECTOR CURRENT IN mA
II
250
'\
500
11
E
,;
~
g
15
t:(
II
400
II
II
B
=O.lI c
11 8 =0.1Ic
300
I}
t<
1/
0
0.6
10
V
VV
07
til
II
V
0.8
J
200
d:
~
I
0.9
:::>
!'"
I
1.0
I
VI--"
p
~
0
0.1
1.0
100
10
05 01
500
10
1.0
50
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
DU] No. A-13,855
OWl} No. A-B,854
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
1
0
VeE='-1 V
1/
v'"kL,)-
9
~
/
o. 8
II
~
'=
~
al
07
0.6
~
~~
1-"'"
.- I-Jp
I-::':;::;:tYCE=10Y
c,'
............
5.0
f---+--+-+-H-++++---=f"....kH+lr+++----1
........ COb
0.5
1.0
10
100
1.0
500
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Ow;!. No, A-13,852
DW9- No. A-13, 856
4-73
20
PROCESS JLA
ProcessJLA
NPN Small-Signal Transistor
Process JLA is a double-diffused epitaxial planar
NPN silicon device. It is designed for use in generalpurpose amplifier and high-current switching circuits.
sa.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 800 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
JLA
0.020" x 0.020"
ALTERNATE PROCESS: OAC
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
COllector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
Test Conditions
V(BR)CEO . Ic=1OmA
Collector-Emitter
Satu ration Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Min.
60
Limits
Typ.
Max.
95
Units
V
V(BR)EBO
IE=1oj.LA
6.0
7.0
-
V
V(BR)CBO
Ic=1ooj.LA
80
140
-
V
ICBO
VcB =8oV
-
-
100
nA
lEBO
VEB =6.oV
-
-
100
nA
-
170
180
45
0.09
0.3
0.96
500
-
-
-
VBE(Sat)
VCE=5.oV,lc=1.omA
VcE =5.oV, Ic=1oomA
VCE=5.oV, Ic=5oomA
Ic =1oomA,I B=1omA
Ic=5oomA,IB=50mA
Ic =5oomA,I B=50mA
fT
Ccb
Cob
VcE =5.oV, Ic=5OmA
VcB =10V, f=1.oMHz
VEB =0.5V, f=1.oMHz
150
hFE
4-74
80
20
-
-
350
4.0
40
0.25
0.75
1.2
-
20
80
V
V
V
MHz
pF
pF
PROCESS JLA
Typical Characteristics
at TA
=
+25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
, II
250
Jljj~11
III
200
:j~
150
100
~
I"
k~
~~
I
I
"
,
,,
,,
VcE -5V
f.;:;
I
I
V-
vI
,,
,
0
II
00001
0.01
I I
1.0
10
0.1
COLLECTOR CURRENT IN rnA
o
10
1.0
1000
100
COLLECTOR CURRENT IN rnA
DWj. No. A-13, 863
Dwg, No, A-13,858
VBE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
VCE(sali AS A FUNCTION
OF COLLECTOR CURRENT
2
800
I
I
I
600
II
I
I
II.
I
I
40 0
I-- V
6
1--)1
---
f.--"
j..
1.0
100
10
COLLECTOR CURRENT IN mA
4
1000
1.0
D\~ No, A-i3,360
20
10
1.0
,
100
10
1000
COLLECTOR CURRENT IN rnA
Dwg No, A-13,861
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
4~-L~~liil
1M
III
I
II
0.1
III,
II
vV'
8
V
I
~
I
200
0
0.1
I
0
~Qill
II
i
f----,-----+-+-,+++i+
~-----
..
II
__~~~~__LJ~~
10
100
1000
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
DW]. No, A-13,859
Ow;]. No, A-13,862
4-75
PROCESS JMA
Process JMA
PNP Small-Signal Transistor
Process JMA is a PNP double-diffused silicon epitaxial planar transistor. Process JMA finds broad application as a medium-power amplifier and switching
transistor. The NPN complement to this device is the
Process JLA transistor.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 800 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
JMA
0.020" x 0.020"
ALTERNATE PROCESSES: BFA, OFC
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
50
Limits
Typ.
Max.
100
-
V(SR)ESO
IE=10,....,A
6.0
8.1
-
V
V(SR)CSO
Ic= 100,....,A
60
125
-
V
Icso
Vcs=60V
-
-
100
nA
IEso
VEB=6.0V
-
-
100
nA
-
150
Symbol
V(SR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sa!)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VSE(sa!)
VCE=1.0V, Ic=1.0mA
VCE=1.0V, Ic=10mA
VcE =1.0V,l c =100mA
Ic=100mA,ls=10mA
Ic = 500mA, Is = 50mA
Ic=500mA,ls=50mA
fT
CCb
CBb
VCE=5.0V, Ic=10mA
Vcs=10V, f=1.0MHz
VEs =0.5V, f=1.0MHz
hFE
4-76
60
20
-
-
-
190
190
160
0.1
0.36
0.98
250
6.0
35
Units
V
-
-
500
-
-
-
0.30
0.75
1.2
V
V
V
-
MHz
pF
pF
15
55
PROCESS JMA
Typical Characteristics
at TA
=
+25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
300
vl,~I-
200
-
f--
,-'
":--150
--
"- v"
=
'"
10V
~
f.l
-
0
" ,
,
-5V
I
vI
-1
0
a:
I
>-
0
,, ,
'z"
;a
0
,
I
,
Z
'"
(!)
50
0,01
01
10
1,0
100
COLLECTOR CURRENT IN rnA
300
"-
,
200
--
~--
/" ............ .......... " --VeE
""7
-
1V
d -ft ? -
100
-
'\
\
100
10
10
COLLECTOR CURRENT IN rnA
dIM]. No. A-I3,867
Owg. No. A-13,866
VBElsat) AS A FUNCTION
OF COLLECTOR CURRENT
VeE!,,,) AS A FUNCTION
OF COLLECTOR CURRENT
'E
v.- - -
o
1000
r1}IJ
V
>-
100
0,001
400
:0
VCE-C=
o
U1,1\1
:i'
11111111
250
400
3
300
1
I
~
w
II
(!)
i'\
~
Ila=O.1Ic
~
li'
I
11 8 =O.1I c I
II
a:
::J
~
~
~
a:
~
./
/
100
--/
V
:::J
8
V
rr
200
a:
o0,1
1,0
I-100
10
-~
1.0
500
1000
Dwg. No. A-13,865
DIM]. No. A-13,864
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBEION) AS A FUNCTION
OF COLLECTOR CURRENT
3
100
10
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
mm
III r
Vi'l V
e
1
-
1
1.1
VC'lr
Y'
9
~
~~
0,5
,.,i-"
~t'
I
VcE =-10V
I-OL-__~~-L~LUJl__~__~~LLLU~__~
1,0
10
100
COLLECTOR CURRENT IN mA
0.1
1000
Dy;g. NO.
A~13.
868
4-77
1.0
REVERSE BIAS IN VOLTS
10
Dwg. No. A-13,869
20
PROCESS JYA
ProcessJYA
PNP RF Amplifier
Process JYA is a PNP silicon epitaxial planar transistor designed for use in low-power, high-frequency
amplifier applications.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ........................ 50 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
JYA
0.015" x 0.015"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Test Conditions
Ic=1.0mA
Min.
20
Limits
Typ.
Max.
27
V(BR)EBO
IE= 10fLA
5.0
7.6
-
V
V(BR)CBO
Ic = 100 fLA
20
40
-
V
ICBO
VcB =20V
-
-
100
nA
lEBO
VEB=4.0V
-
-
100
nA
-
-
-
-
-
600
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sat)
VcE =10\l, Ic=0.1 mA
VcE =10\l, Ic=10mA
VcE =10\l, Ic=50mA
Ic=10mA,IB=1.0mA
Ic=50mA,IB=5.0mA
Ic =50mA,I B=5.0mA
fT
CCb
Ceb
VcE =10V,l c =5.0mA
VcB =10\l, f=1.0MHz
VEB=0.5\1, f=1.0MHz
hFE
4-78
-
-
-
90
100
80
0.09
0.23
0.97
0.2
0.5
1.2
850
0.62
1.2
0.85
4.0
-
Units
V
V
V
V
MHz
pF
pF
PROCESS JYA
Typical Characteristics
at TA = +25°C
hFE AS A FUNCTION
OF COLLECTOR CURRENT
IT AS A FUNCTION
OF COLLECTOR CURRENT
125
I
lLlllmov
100
75
~-
VCE"C= -5V
.... -l"i"I'MTI1',
_VCE= -1 V "
--- -
---
I-
,,
\
I--~
,
\
a
\
5
1\
a
0001
I
0.1
0.D1
100 200
10
1.0
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA Dwg NO, A-13,875
0119. No, A-13,8ll
VUE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
>
I
UJ
'"~
800
1. 1
1j
"'=>
"'or
600
T
f-
II
/'
9
-
400
tc
f!
u
~
--
200
a
0.1
7 __
,/
10
10
100
6
01
200
,,/'
---
O. 8
"
UJ
d:
/
=O.1I c I
1. 0
0
~
cE=1 V \
1.0
~;;:
\
\
,
\
\
\
200
~'f'
'"
\
\
o0.1
100 200
10
\
\
Ve,=1V\
10
1.0
COLLECTOR CURRENT IN rnA
!)~. No. Aal3,881
COLLECTOR CURRENT IN rnA
,
~/
0
,
0.1
400
VcE -5V ...
~~
z
\\
200
0.01
, lI'
ff
c.
400
00.001
,
600
100
Dwg. No. A-B,884
VSE('.I) AS A FUNCTION
OF COLLECTOR CURRENT
VeE('.I) AS A FUNCTION
OF COLLECTOR CURRENT
1.0
~
I--
a:
/
/
1.0
"
S2
1:l
~
"ill
V
OJ
V
0.7
V
;,./"
0.6
.....
~
10
COLLECTOR CURRENT IN rnA
100
D~
1.0
10
COLLECTOR CURRENT IN rnA
200
No. A-13,885
100 200
DIMJ No. A-I3, 886
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VSE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
1.0
~
S2
s.or-
0.9
;;;
OJ
~
S2
VcE =5V
0.8
Z
9
a:
t':!
0.7
!=
"ill
~
OJ
~
0.6
0.5
1.0
VCE=~
-
..dfS' ...
,
~~
~
..-
4.0
"
,..ir"'"
10
COlLECTOR CURRENT IN rnA
100
..
~~
.......
--+-+-+-+1-++----+--"''k-I-++++++----1
3.0 ""·""-~.ok.",.--j.
VCE=10V
I
f-----+-+-+-f-+H'l'k---+--+-+-++++t+----1
..............
2.0
f-----+-+-+-f-+H+-f-----""I-.....tc••-+-••++++CI+"'----1
1.0
i--+--++--I+Htt--+--++++++t+----I
°0~.1--L~~-LLU~,~.0-~-~LL~~,0~~~'
200
REVERSE BIAS IN VOLTS
OW]. No. A-13,882
4-83
Dv.g. No. A-13,883
PROCESS SLL
Process SLL
PNP Small-Signal Transistor
Process SLL is a double-diffused epitaxial planar
PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its
PNP complement is the Sprague Process SKL
transistor.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ie ....................... 200mA
Operating Junction Temperature, TJ . . . . . . . . . . +150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
o.m~xo.m~
SLL
ALTERNATE PROCESS: BXE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Min.
40
Limits
Typ.
Max.
70
IE=10j.1A
6.0
8.2
-
V
V(BR)CBO
Ic=100j.1A
50
80
-
V
leBo
VcB =40V
-
-
100
nA
lEBO
VEB =6.0V
-
-
100
nA
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
le= 10mA
V(BR)EBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(Sat)
VcE =5.0V,l c =0.1mA
VeE =5.0V,l c =1.0mA
VCE=5.0V, Ic=10mA
Ic=10mA,IB=1.0mA
Ic=50mA,IB=5.0mA
Ic=50mA,IB=5.0mA
fT
CCb
Ceb
VCE=5.0V,lc=1.0mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
Test Conditions
Units
V
\
4-84
-
-
100
-
170
210
220
0.05
0.1
0.86
220
1.5
6.4
-
-
-
-
-
-
4.0
16
V
V
V
MHz
pF
pF
PROCESS SLL
Typical Characteristics
at TA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
600
300
IJJJIIII,J
250
-5V
V__rtCE=
'-I."tl!I'"
..
200
,.
-- - -
V
150
i-':
100
~:I~
-
--,. -
0.1
\
/" / ,-
(l.
I
f0
V/,. ,.
300
;:
0
z
\
,.
o10.1
100
10
1.0
400
"
~
i\
\~
0.01
ti
llULv
0
,
0.001
500
";;;
,
VCE--1Y
50
o
:\'
1.0
300
E
;;;
w
~
I
250
J
(;2
z
g
Ii:
a:
"Ii:
"'a:w
1e=O.1Ic
I
I
/
200
//
/
/"
150
/1-'
f-
to
"d:
w
~
/
11,=0.1I c 1
/
100
vV'
/
50
"
10
100
10
05
200
100
10
1.0
0.1
Owg, No, A-13,889
Dwg. No. A-13,890
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
0
0
"'b
~
J!Jik.-
0.9
;;;
w
~
~
(;2
a:
~
~
"'
200
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
0.8
0.7
~
,.... ~ p- --
~
k;: V::.; :;-
"-
~
w
z
"i>
-p.~,.
VCE~
15
\I
-1DY
21
0
.. _- ...... .. ---
§
z
;S
t:-- t--- I--t-
5. 0
--- - - -
~
........
I'-..- 1'.....
.........
0.6
10
100
0
200
01
__ I"-
'rr
t-.
10
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Owg. No. A-13,887
Dwg. No. A-13,891
4-85
PROCESS SMN
ProcessSMN
PNP High-Speed Switching Transistor
Process SMN is a PNP double-diffused silicon epitaxial planar transistor with gold diffusion. It is primarily used in amplifier and general-purpose
switching circuits. Its complement is the NPN process TVO (FFB).
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ie ....................... 200 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts' ..... - 55°C to +150°C
SMN
0.012" x 0.019"
ALTERNATE PROCESS: BTB
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Ic=10mA
Min.
30
Limits
Typ.
Max.
65
V(BR)EBO
IE=10,....A
6.0
8.1
-
V
V(BR)CBO
Ic =100,....A
40
85
-
V
ICBO
VcB =40V
-
-
100
nA
lEBO
VEB =6.0V
-
-
100
nA
VCE=1.0V,lc=1.0mA
VCE=1.0V,lc=10mA
VCE = 1.0V, Ic = 50mA
Ic=10mA,IB=1.0mA
Ic=50mA,IB=5.0mA
Ic=50mA,IB=5.0mA
-
500
-
-
-
VcE =20V, Ic=10mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
VcE =5.0V, Ic =100,....A,
Rs = 1.0kfl, BW= 10Hz-15.7kHz
Vcc=3.0V,lc=10mA,
IB=1.0mA
Vcc=3.0V,lc=10mA,
IB1=IB2=1.0mA
250
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Satu ration Voltage
VCE(sa!)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
VBE(sa!)
Delay Time*
Rise Time*
Storage Tirne*
Fall Time*
td
t,
ts
hFE
fT
Ceb
Ceb
NF
4
Test Conditions
..
'Swltchlng speeds measured at 2N3906 test conditions.
4-86
50
20
-
-
-
-
-
Units
V
110
125
100
0.06
0.12
0.86
0.25
0.4
0.95
V
V
V
600
1.5
6.6
1.0
4.5
10
5.0
MHz
pF
pF
dB
18
14
140
22
35
35
225
75
ns
ns
ns
ns
PROCESS SMN
Typical Characteristics
alTA = +25°C
fr AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
200
BOO
JJ11
I
N
1 1
:x:
f-
---- - -
150
"<::
V
...-f::
100
..--
--..
~-
~-
50
l-
l~
e
e
a:
.
f..-- Ve," -5V-
IUcE,," -lV
600
Il.
:x:
l-
400
.
k6
'::",
e
;:
e
z
"I
0.01
1.0
0.1
10
z
,
200
"
100200
VaE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
1.0
::>
.......
'"
V
........... f.-"
~
1.0
100
10
0.5
200
0.1
10
1.0
100
200
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Dwg. ttl. A-13,8
~11~
.-- .If-tl:
'"
II
3
600
11,~0.1Ic
z
Ils=O.1Ic I
I
Q
t;:
1
a:
::0
t;:
if)
400
IEf-
V
tc
'4'"
~
g
a:
200
f..-
Vy
0
0
o
0.1
10
1.0
5
1000
100
l-
I--
1.0
0.1
100
10
1000
COLLECTOR CURRENT IN mA
COLLECTOR CURRENT IN rnA
Dwg. No. A-13,904
Dwg, No. A-13,903
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
5
1.5
if)
'~='
O~
1.3
'"
~
~
Vce= 1V
1
a
Vc'~51'
a:
~
,
,
0
k;: l{f:
0.9
~
~
,
...... ~!~
Vce=1pV
0.7
1-- I'---t--
5
. '. . .
f'--.-- J'...
. ...... .., .....
'"
5. 0
----
'. . . .
~
0\0
10
0
1000
100
01
1.0
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dwg. No, A-13,9oo
Dwg. No, A-13,899
4-89
20
PROCESS SQl
Process SQl
NPN Darlington Transistor
Process SOL is a double-diffused silicon epitaxial
NPN Darlington pair. This device is designed for use
as a high-gain amplifier in audio and control circuits
and as a driver with up to 1A collector current. Process SOL devices complement the PNP Darlington,
Process SRB.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500 mA
Operating Junction Temperature, TJ . . . . . . . • . . + 150°C
Storage Temperature Range, T5 ..... -55°C to+150°C
SQL
0.028" x 0.028"
ALTERNATE PROCESS: TPM
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Test Conditions
Limits
Typ.
Max.
45
Symbol
V(BR)CEO
Ic=10mA
Min.
25
V(BR)EBO
IE= 1O f.LA
12
14.2
-
V
V(BR)CBO
Ic=100f.LA
65
95
-
V
ICBO
VcB =60V
-
-
100
nA
lEBO
VEB =10V
-
-
100
nA
-
-
-
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output CapaCitance
Input Capacitance
VBE(sat)
VCE=5.0V, Ic=1.0mA
VcE =5.0V,l c =10mA
VCE=5.0V,lc=100mA
Ic=10mA, IB=0.01 mA
Ic =200mA,I B=0.2mA
Ic =200mA,I B=0.2mA
fT
CCb
Cab
VCE=5.0V, Ic=10mA
VcB =10V, f=1.0MHz
VEB=1.0V, f=1.0MHz
hFE
4-90
7k
20k
-
150
-
28k
36k
50k
0.7
0.81
1.45
230
5.2
11.3
100k
Units
V
-
-
1.2
1.4
1.6
V
V
V
-
10
25
MHz
pF
pF
PROCESS Sal
Typical Characteristics
at TA = +25°C
fr AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
400
100K
N
I
"
80K
~
tU
0
40K
d
20K
---_ f---
-::: -- - --
a:
"-
". '. .
- ,
V
I
t-
o
200
&-~ ~ --~
~
0
z
'Z"
\~rrr
/
aJ
"
100
---
----
~lo}
-Tn
-VCE=2V
-I-'
(!)
Tn
VCE=1
o 0.1
~ .........
:0
0
VCE=10V
60K
V
/.--
300
1.0
v
100
10
COLLECTOR CURRENT IN rnA
o
1000
~
10
10
100
COLLECTOR CURRENT IN mA
Dwg. no. A-13,905
Dwg. No. A-13,907
VBE!"I) AS A FUNCTION
OF COLLECTOR CURRENT
VeE!"I) AS A FUNCTION
OF COLLECTOR CURRENT
2.5
'"
!J
~
~
w
II
B
=O.OO1Ic
~
I
20
p
[l
~
z
.OO1IC
Q
t;:
9
a:
--
7
~ f5
10
1.0
V
V
15
:0
t;:
'"a:w
F--
t-
tc
~w
~
10
~ f-
--
100
10
COLLECTOR CURRENT IN rnA
1000
100
I---
COLLECTOR CURRENT IN rnA
DIMj. No. A-13,909
l000
Dwg. No. A-13,910
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE!ON) AS A FUNCTION
OF COLLECTOR CURRENT
5
25
DTv
'Ii
20
<;
w
U
voe=n
~
1.5
~
I--'p..
~ t-
z
;'!
t---
15
[j
jo--'--"
11:
J..- ~tV =10V
is
z
cE
§z
~
10
--,1"-
,
.
,
F----.
~ f:.;
~~
CeO
50
CoO
0.5
o
10
10
100
0.1
1000
1.0
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Dwg. No, A-13,906
Dwg. No, A-I],908
4-91
20
PROCESS SRB
Process SRB
PNP Darlington Transistor
Process SRB is a double-diffused silicon epitaxial
PNP Darlington pair. This device is designed for use
as a high-gain amplifier in audio and control circuits
and as a driver with up to 1A collector current. Process SRB devices complement the NPN Darlington,
Process SOL.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
SRB
0.029" x 0.029"
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Limits
Typ.
Max.
75
-
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Ic=10mA
Min.
50
V(BR)EBO
IE=10/LA
12
16.7
-
V
V(BR)CBO
Ic= 100 /LA
60
85
-
V
ICBO
VcB =60V
-
-
100
nA
lEBO
VEB =10V
-
-
100
nA
-
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VBE(sat)
VcE =5.0V, Ic=1.0mA
VcE =5.0V,l c =10mA
VcE =5.0V,l c =100mA
Ic=10mA, IB=0.01 mA
Ic =200mA,I B =0.2mA
Ic =200mA,I B=0.2mA
fr
COb
Cib
VcE =5.0V,l c =10mA
VcB =10V, f=1.0MHz
VEB=1.0V, f=1.0MHz
100
hFE
Test Conditions
4-92
3k
3k
-
-
-
16k
18k
17k
0.75
0.88
1.47
200
6.4
9.4
Units
V
-
-
80k
-
-
-
1.2
1.5
2.0
V
V
V
-
10
20
MHz
pF
pF
PROCESS SRB
Typical Characteristics
alTA
=
+25°C
fr AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
350
30K
11
25K
vJ~ol)
20K
)..-
.. -'" .. .
-
15K
10K
..'
-
.'
'"
;;;
~c,~ -sl"
.
f'...
t;
::tl
'"
,,
VCE = -1 V
250
~,
::0
I'
0
&l
,
200
:r:
~
150
~
~ ...
z
~
~
\
'"
5K
-
100
.' "
...
I
10
COLLECTOR CURRENT IN rnA
!)WJ. No, A-13,9J3
w
II
1.5
I
IBee 0.001 Ie
IS
;;;
1
w
1.3
tc
a:
~
f2
~
8
II, ~ O.oollc I
ISz
16
tc
a:
::0
tc
1.4
Q
1.1
0.
o
"."~
Ow ---~
\
""Trr
30
~
~
z
\
100
400
0
10
100 200
r.u;J.
10
50
COLLECTOR CURRENT IN rnA
No. A-13, 1f18
Dw;J. No. A-13,917
VBE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(,at) AS A FUNCTION
OF COLLECTOR CURRENT
400
z
8
V
0
200
i=
«
a:
J!
0
0.1
7
1=
:;;
o. 6
V
V
Vi--'
w
w
W
;;;
DW]. No,
A~13.
5
10
0.1
100
10
COLLECTOR CURRENT IN rnA
920
200
Dwg. No A-13, 922
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
10
1.0
1/
//
09
v"U:
r)' ';y
v" C?.... -;..;... '"
08
VcE =-10V
07
~
~
8.0
,[/
"~
r-- r2:.t-
;;;
w
u
z
»
60
~
,
()
z
:,;-
2
.............
40
u
z
~
0.6
10
100
4-95
..............
'"
2.0
0
0.1
200
COLLECTOR CURRENT IN rnA
CoO
"".
........
1.0
REVERSE BIAS IN VOLTS
10
Ow;!. No. A-13,919
20
PROCESS TNL
Process TNL
NPN Small-Signal Transistor
Process TNL transistors and chips are doublediffused NPN silicon epitaxial planar devices intended for use in general-purpose amplifiers and
medium-power switching applications. Selected
chips and finished devices, such as the 2N5376 and
2N5377, are ideally suited for industrial small-signal,
low-noise applications. Process TNL is the complement to the PNP Process TQL.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 500mA
Operating Junction Temperature, TJ ••......•. + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Collector-Emitter
Satu ration Voltage
TNL
0.022" x 0.022"
ALTERNATE PROCESSES: BBC, DCA, JGA
=+ 25°C
Ic=10mA
Min.
30
Limits
Typ.
Max.
55
-
V(BR)EBO
IE=10 ....A
5.0
7.6
-
V
V(BR)CBO
Ic =100 ....A
60
95
-
V
ICBO
VcB =50V
-
-
100
nA
lEBO
VEB=5.0V
-
-
100
nA
VcE =5.0V, Ic=O.1 mA
VcE =5.0V,l c =10mA
VcE =5.0V, Ic=100mA
Ic=10mA,IB=1.0mA
Ic =100mA,I B=10mA
Ic =100mA,I B=10mA
-
Symbol
V(BR)CEO
hFE
VCE(sa!)
Test Conditions
Base-Emitter
VBE(sa!)
Saturation Voltage
Gain-Bandwidth Product fr
VCE=5.0V, Ic=50mA
Output Capacitance
VcB =10V, f=1.0MHz
CCb
Input Capacitance
VEB =0.5V, f=1.0MHz
Ceb
Delay Time'
Vcc =30V,l c =150mA,
td
Rise Time'
IB=15mA
tr
Storage Time'
Vcc = 30 V, Ic = 150 mA,
ts
Fall Time'
IB1 = IB2= 15mA
4
'Switchlng speeds measured at 2N2222A test conditions.
4-96
240
260
230
0.04
0.1
0.9
-
-
400
3.5
18
8.0
-
17
-
330
50
-
-
-
-
10
25
400
70
Units
V
-
-
V
V
V
MHz
pF
pF
ns
ns
ns
ns
PROCESS TNL
Typical Characteristics
at TA = + 25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
400
I
I
30 0
20
600
1
O~
--
--
- -- -
::.:
:I'
:2
~
VCE-1V\
10 0
0
0
a:
I
YCE-=-10V
···
.
.
0
200
10
10
100
f--------
V
--l
V -v.:: -- --
- r-
i
I
\
100
10
500
COLLECTOR CURRENT!N rnA
COLLECTOR CURRENT IN mA
Ow;). No. A-13,923
OW]. No A-13,925
VSE(sa') AS A FUNCTION
OF COLLECTOR CURRENT
VeE,sa') AS A FUNCTION
OF COLLECTOR CURRENT
400
I
11
if>
I
I
I
~
-
~I
i
~jjl I~I~
01
:
~
II
__
10
I
II
,/
09
V
Q
~I; II
I
1.0
I
~
z
I
I, i
i III .
II
-
!
10
w
I
I
I
"'t'i"
--~~
!
200
:!
':J
Ile~~'U
300
100
-
",;
VCE-=1 V
,P-'
z
'""
;
-
300
z
I
01
--p--'
..
I
0
'~"
I- ........
VCE=5V
V
400
tL
I
f--
\
001
II
1------
:J
v" 5:'-:;
\
III
500
"G
10V
Vee
I'
tt
"
0.8
a:
w
07
~
06
a:
II
:J
~
//
f-f--
i!j
,
\
0
0
0:
,
"J:
t-
o
\ VCE=5V
;0
.,z
0
200
'"z
;..-- ~
;;: 100
\
\
5K
400
:I!
"<:
1.0
10
100
COLLECTOR CURRENT IN mA
A~13.
931
w
~
15
'~"
VBE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
I
3.0
!3
II I
1.1
II
S2
~
118=0.001Ic
UJ
2.5
I I," 0.001le I
~
1.0
I
0:
S2
z
2.0
'"
1.5
Q
0.9
0:
I"
0.8
;;.-- r--
::>
V
0:
~
100
01'19. No. A·I)933
1.2
S2
~
VCE=2V
10
COLLECTOR CURRENT IN mA
1000
Owg No.
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
~
--- --
VCE=1V
0.1
b
-:;::> .' 1----
C!J
o
(J)
~
.'
;.~.
..
~
~
~
..-
iii
~
0.6
1.0
-
0:
UJ
1.0
....-
r--
-
~
0.5
10
100
COLLECTOR CURRENT IN rnA
1000
1000
10
100
COll.ECTOR CURRENT IN rnA
1.0
Dwg. No. A-13,93u
Dw;J. r-iJ. A-13,929
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
3.0
20
500
~
vrr
1.0
VeE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
~
\
o
500
.... 1" ......
COLLECTOR CURRENT IN rnA
D't'.9. No.
i5
-
.'
COLLECTOR CURRENT IN rnA
~ 400
,
- ..--- ~
,
\
0.01
--_ .. .. - .........
~.
.---Vce",,5V
-+++HH -- -
V
..-~
V
...-~
~
8
1.0
10
100
500
1.0
10
100
Owg. No. AMI3,937
Dwg No. A-13,938
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
1.1
25
/
(f)
~
10
t 1// "
l!:
~
~
0:
09
ICIYI{ 7-f; "
08
I" ~
0.6
1.0
--
1-'-
"""
If:100MHz!
I"
~
'.'.
~
,'/
"/
~ ... ~
,... j.:t. ~
Vce""10V
5.0
11111
10
100
o0.1
500
COLLECTOR CURRENT IN rnA
1.0
REVERSE BIAS IN VOlTS
O"l<
~
A-13.939
4-101
"
111 J
t::::: ::::r--'.
ce =1V
UJ
500
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
I
~.
r
..........
10
OW]. No. A-13,940
20
PROCESSTVO
ProcessTVO
NPN High-Speed Switching Transistor
Process Tva is an NPN double-diffused silicon
epitaxial planar device with gold diffusion. It is used
as a general-purpose switch and amplifier. The PNP
complement to this device is Process BTB.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 200 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
Tva
0.019"xO.019"
ALTERNATE PROCESS: FFB
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Ic=10mA
Min.
30
Limits
Typ.
Max.
50
-
V(BR)EBO
IE= 1O fLA
6.0
7.1
-
V
V(BR)CBO
Ic=100fLA
70
110
-
V
ICBO
VcB =70V
-
-
100
nA
lEBO
VEB=6.0V
-
-
100
nA
VCE=1.0V, Ic=1.0mA
VCE=1.0V, Ic=10mA
VCE = 1.0V, Ic = 50mA
Ic=10mA,IB=1.0mA
Ic =50mA,I B=5.0mA
Ic=50mA,IB=5.0mA
-
-
-
VcE =20V, Ic=10mA
VcB =5.0V, f=1.0MHz
VEB =0.5V, f=1.0MHz
VCE=5.0V,lc=100fLA,
Rs = 1.0kn, BW = 10Hz-15.7kHz
Vcc=3.0V,lc=10mA,
IB=1.0mA
Vcc =30V,l c=10mA,
IB1=IB2=1.0mA
..
250
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
VBE(Sat)
Delay Time'
Rise Time'
Storage Time'
Fall Time'
hFE
fT
CCb
CBb
NF
td
t,
ts
It
Test Conditions
'Swltchlng speeds measured at 2N3904 test conditions .
4-102
-
-
-
-
-
-
Units
V
130
135
95
0.07
0.11
0.85
0.2
0.3
0.95
V
V
V
460
1.6
5.0
1.0
4.0
8.0
5.0
MHz
pF
pF
dB
15
12
190
20
35
35
225
50
ns
ns
ns
ns
-
PROCESS TVO
Typical Characteristics
at TA = +25°C
fr AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
500
:l!
"
150~~+m~~H*~++~I:;.-_~_1~-~~HH1~~~~-r.HV~e'~-~'D~V
.... 1\ •
--
400
v/
U
300
!l.
::1
;;:
+. . . .
VC~-'"
...
..
1V
.
f\\
,'/
J:
'/
I-
"
3'
"«z
VCE·~5V
11 ....
1#
=>
"a:"
Y. 'JIW
. ..
-
~
I-
.
200
\
)1
\
100
'"
00.001
1.0
10
0.1
COlLECTOR CURRENT IN rnA
Dwg.
0.01
o
100 200
0.1
VUE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
1.1
300
>
E
S?
z
Q
!!i
I
~
~
250
S?
;;;
II,eD.1Ie I
"''0:W"
I:::
~"
200
/
@
--
S?
50
o0.1
1.0
II B =O.1I C I
Q
a:
0.8
"'w
0.7
0:
l-
V
V
V
e
,/
"W
:----
w
~
10
COLLECTOR CURRENT IN rnA
/
0.9
z
'~"
-
:J
8
~
/
150
100
I
1.0
w
~
:::>
100
COLLECTOR CURRENT IN rnA Dwg. NO. A-13,943
VeE(sat) AS A FUNCTION
OF COLLECTOR CURRENT
w
10
1.0
~.A-I3.944
100
0.6
0.5
200
1.0
10
COLLECTOR CURRENT IN rnA
0.1
D'MJ. No. A-I3,946
100
200
Dv.g No. A-13,945
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
V8E (ON) AS A FUNCTION
OF COLLECTOR CURRENT
1
!!i
6.0
--
1.0
~
S?
;;;
~
O. 9
5
o. 8
g
VCE=1V
0:
~
0.7
ill
0.6
~
;;;
f.---
O. 5
1.0
-
-~~
5.0
~
ve,-sri?
----....
- - Ve, 1DV
-
100
r--
4.0
I----+-------j-f----+--+-li-+-+-l-r......:::",.~--l----l--I----I--+--l-_l__W
~
3.0
i--=-9~~ __ • ___ .
~
2.0 f-----+--f--H-+H-1-+·...:-"'--"'--.f_=_~
••+-+-+--+-+-++I
~
200
~
~
"'r----.-r-....
.........
1.0
10
f----+------jf--H+H--t+----+-+-+-+-++++-I
f-----+--f--H-+--H-1+_-------+-+_+_+__+_+_++I
1.0
COLLECTOR CURRENT IN rnA
10
REVERSE BIAS IN VOLTS
Dwg• .No. A-13,94J
Dwg. No. A-13;942
4-103
PROCESSVAB
Process VAS
NPN High-Voltage Transistor
Process VAB is an NPN double-diffused silicon
epitaxial planar device designed for use in generalpurpose, high-voltage amplifier circuits. Process VAB
is the complement to PNP Process VHB.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 300mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
VAS
0.024" x 0.024"
ALTERNATE PROCESS: VXA
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(SR)CEO
Test Conditions
Ic= 1.0mA
Min.
90
Limits
Typ.
Max.
180
V(SR)ESO
IE=10f.l,A
6.0
8.5
-
V
V(SR)CSO
Ic=100f.l,A
200
310
-
V
Icso
Vcs=200V
-
-
100
nA
IESO
VEs=6.0V
-
-
100
nA
-
100
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
VSE(sat)
VcE =5.0V,l c =1.0mA
VcE =5.011, Ic=10mA
VcE =5.011, Ic=50mA
Ic=10mA,ls=1.0mA
Ic=50mA,ls=5.0mA
Ic=50mA,ls=5.0mA
fT
CCb
Ceb
VcE =101l, Ic=10mA
Vcs=10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-104
70
50
-
-
-
Units
V
-
-
500
-
-
-
240
260
250
0.05
0.08
0.8
0.2
0.25
1.00
V
V
V
200
3.0
33
6.0
50
MHz
pF
pF
PROCESS VAB
Typical Characteristics
at TA = +25°C
fr AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
300
~
::;
;<;
I-
()
:>
0
0
a:
ttl
/--
250
-~
Vc:-=5V
........
"" .... "" ..
200
J:
,
0
150
~'
z
-<
VeE"'" -10V
.
r:".
VCE "-
\',
5V"/
III
VeE"""'
:r:
0.1
1.0
,,
b
\
~z
lV
'""
10
~81.
........
,
rr
/--"
",
---
150
V
~
,
0.01
~
~ ....
100
\
100
COLLECTOR CURRENT IN rnA
D"'9. No. A-13,952
VeE(Sa1) AS A FUNCTION
OF COLLECTOR CURRENT
VBE(sal} AS A FUNCTION
OF COLLECTOR CURRENT
1.0
300
f--
t::
,
Vc,~I-l~
\
Dwg. No. A-13,957
~
'
10
100200
COLLECTOR CURRENT IN rnA
~
,
v
~
100
0:
--V
50
............
0.7
y .......
W
f--
t::
"~
0.6
V
~
o
0.1
100
10
1.0
COLLECTOR CURRENT IN rnA
0.5
200
V
I-1.0
0.1
100
10
200
COLLECTOR CURRENT IN rnA
D'Ng. No. A-13,956
Dwg. No, A-13,955
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON} AS A FUNCTION
OF COLLECTOR CURRENT
1.0
1.5
500
E
if
I
UJ
~
400
II
~
z
B
/
='O.1I c I
II
Q
"'a:
"''"a:
300
f-
200
3
I,
B
II
II
",Q.1Ic
1
:::l
UJ
e
V
"d:
UJ
f!
0
100
L..- V
~
~
0
10
1.0
100
0.5
200
0.1
j.-
V-
I--
100
10
1.0
200
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Dwg. No, A-14,085
D'MJ. NU. A-14,084
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VOE(ONj AS A FUNCTION
OF COLLECTOR CURRENT
5
lJ1v
vcUJff
3
1
li
8.0
I--+-I-I-f+f-+++--+-I-I-+-H-+++--
if
//
/1
b; - ~ v.-
-
I
VCE=10V
2.0 I--+-I-I-+++++I----+=-~=t-l--W#.b~
r-10
100
20
1.0
200
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Dwg. No. A-14,088
Dwg.
4-109
Nk,
A-14,089
PROCESS VXA
Process VXA
NPN Small-Signal Transistor
Process VXA is a double-diffused NPN silicon epitaxial planar device. It is designed for use in generalpurpose high-voltage amplifiers. It is the complement
to the PNP Process SeA.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ....................... 150mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
VXA
ELECTRICAL CHARACTERISTICS at TA
0.023" x 0.023"
=+ 25°C
Ic=10mA
Min.
100
Limits
Typ.
Max.
185
V(BR)EBO
IE=10J.lA
6.0
8.4
-
V
V(BR)CBO
Ic=100J.lA
180
280
-
V
ICBO
VcB =180V
-
-
100
nA
lEBO
VE8=6.0V
-
-
100
nA
VCE=5.0V,lc=1.0mA
VcE =5.0V. Ic=10mA
VCE = 5.0V, Ic=50mA
Ic =10mA,I B=1.0mA
Ic=50mA,IB=5.0mA
Ic =50mA,I B=5.0mA
-
VcE =10V,l c =10mA
VCB = 10V, f = 1.0MHz
VE8 =0.5V, f=1.0MHz
VcE =5.0V,l c =250J.lA,
Rs=1kn, BW=10Hz-15.7kHz
100
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
VBE(sat)
hFE
fT
COb
Cib
NF
Test Conditions
4-110
80
30
-
-
-
Units
V
-
-
500
-
150
160
90
0.07
0.11
0.8
0.15
0.25
1.2
V
V
V
210
2.4
17
1.0
6.0
30
8.0
MHz
pF
pF
dB
-
PROCESS VXA
Typical Characteristics
alTA
=
+25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
300
250
200
150
100
~
-
....
..-
I-.-
\
\
VCE=10V
ti
200
fil
"-
~
~
z
\
I
Vce=1V
50
0.1
250
::J
0
,,
V ~, '
Vee = 5V
0.01
:I'
"1!:
III
1.0
I
10
(!)
t~,
150
100
~.
L~ -
~
~'
,,
-
-
I'\.
'\ '\
Vce=5V \
!\V"~10V
\
Vce=1V
50
100 200
10
COll..ECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Owg. No. A-13,959
VBElsal) AS A FUNCTION
OF COLLECTOR CURRENT
VeElsal) AS A FUNCTION
OF COLLECTOR CURRENT
1:;
1.0
250
;
~
~
~
t:;
j
"'§2
~
1!:
g~
~
I
200
I'B~O.l'o
I
1!:
w
/
150
0.9
I'B~0.1I0
~
§2
z
0.8
100
50
--
~
~
...-
0.7
,...-'"
a:
w
f-
tc
:J:"
0.6
~
10
100
....-
0.50.1
200
1.0
COLLECTOR CURRENT IN rnA
10
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
13
'.0~~~111~1
§2
o.91----+-+-+-+-+++++----1-+-f-++1.,+1++~~;V,,~l.V
~
Vce=5V
,
, ,'/'
0.8 f---+-+-+-+-+++++----1-+-f---b~,~V4-,,-~--,-,0,,--jV
k;';~.;: ,
~
0.7
f---+-+-+-+-±.I;~...~""
..."'...'-1I'-..
'_+_+_++++++______1
ill
0.6
r--t-+-+-+-+++++----i-+-f-+++t++----1
~
200
0"1). No. A"J'l62
VBEIDN) AS A FUNCTION
OF COLLECTOR CURRENT
g
100
COLLECTOR CURRENT IN rnA
Owg. No. A-13,963
~
[7
,/'
::J
/1-'
I
/~
Q
1.0
~
100
Owg. No. A-B,960
~~r-"'t-
........Coo-..
5.0
~-+-----t-::::--+-'-H-..j..j.kk---I--I--+--++++++-_____1
................... ..... .. .
°OL,--L~-L~~lll.0~~-~-LLL~,0-~20
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN rnA
Ow:]. No. A-13,961
Dwg. No. A-13,964
4-111
PROCESS YCA
Process yeA
NPN Small-Signal Transistor
Process yeA is a double-diffused epitaxial planar
NPN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can operate at collector currents of up to 1 A. It is the complement to the PNP Process YDA.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ...................... 1000mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
yeA
0.031" x 0.031"
ALTERNATE PROCESS: DID
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Ic=10mA
Min.
50
Limits
Typ.
Max.
80
V(BR)EBO
IE= 1O fLA
6.0
8.0
-
V
V(BR)CBO
Ic=100fLA
120
180
-
V
ICBO
VcB =100V
-
-
100
nA
lEBO
VEB=5.0V
-
-
100
nA
-
-
-
VBE(Sat)
VcE =5.0V,l c =10mA
VcE =5.0V,l c =100mA
VcE =5.011, Ic=500mA
Ic =100mA,I B=10mA
Ic =500mA,I B=50mA
Ic =100mA,I B=10mA
fT
CCb
Ceb
VcE =5.011, Ic=100mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
150
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Cu rrent
Transfer Ratio
Symbol
V(BR)CEO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
hFE
Test Conditions
4-112
50
-
-
-
200
210
200
0.05
0.16
0.77
230
9.0
120
-
Units
V
0.2
0.5
0.8
V
V
V
-
MHz
pF
pF
30
150
PROCESS YCA
Typical Characteristics
at TA = +25°C
Ir AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
300
250
300
~~~~~~~~_~~~~~~~~
~-+-I-+++++lI-'i -I-+-Itlllii----!-llllC-+-Ill_wll-lJjj1-l-l-l-fl-lJjj'
N
I
200
""
150 H-+tft!:lli,-.:?Ii
...""-'ffiIt+t-++t+t+1+t-+--H+HtIt-I-+++I+lfH--+1c1++lll
I
~
"-
b
!I
~
~
Z
100 H-+tHtttf---+++t+tttt--++++++ttI--+-HH-ttIt--+-I+l+fllI-+-++H'IIlI
$
50 H-+tHtttf---+++t+tttt--++++++ttI--+-HH-ttt!-+--H-++IilH-+t++++ll
..
250
20
0
----
~
100
k:-:"= ~ --- -p-VCE=5V
~--
- --~------ -
150
IJ
VcE =10V
f-"
-
VeE"-"1 V
'I'- ,
0
I
0
00L.OOc',--'-LWillO.OC",·..LL.LWilLO.,--"--'-LLW,lL.O---"--LWlJJ,LO--LJ..llLlllJ
1000
'0-0 -LiJ.illW
100
10
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN mA
Dwg. No. A-13,967
Dwg. No. A-13,970
VOElsal) AS A FUNCTION
OF COLLECTOR CURRENT
VeElsal) AS A FUNCTION
OF COLLECTOR CURRENT
>
300
11
E
"~
250
Q
200
w
CJ
~
z
"
"IE
II
en
Co
,
"
~
150
"'a:"
100
~0
50
~
z
09
"
"i'"
08
I
1/
Q
i
a:
a:
II
07
V
Co
Clj
/
W
~
I
06
l)
100
10
0.5
1000
~V
0.1
Dwg. No. A-13,968
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VOEION) AS A FUNCTION
OF COLLECTOR CURRENT
I
II
I
~!
Ii
I
I' 'I 'v
1.0
~
"~
w
CJ
~
z
(J
0.9
II
0.8
,
a:
i'"Co
Clj
0.7
~
0.6
0.5
~
1.0
10
,
!IIU~
~ I- ~~
W
II
I
~ 150 f--+--+--+-+1-+-t+t----+-+-t-i-+-t++-I-~
w
~
f!
y ~'
V'-L 5V
i '
~h
VeE
-~
(3
rt.
100 f--+--+-+-H-+-t+F.......c-l-+-t-i-+-t++-I-~
to
;;;
50f--+--+-+--H-+-t+t-----+--I-t-i-+-t++-I------j
~
I
10V
I
t--t--t-
-J-.-r--..
z
ml
I
Illil
!
100
1000
COLLECTOR CURRENT IN rnA
Ow:;), No. A-13,966
"'Co
100
10
1.0
COLLECTOR CURRENT IN mA
1.1
I
il
en
I
1.0
II
V
OJ
r
~
IIB'~-O.1ICJ
CJ
OJ
Co
II
1.0
w
a:
en
~
I
IIB~ O.11c I
i
I
I
II1I
10
1000
10
REVERSE BIAS IN VOLTS
COLLECTOR CURRENT IN mA
Dwg No A-13,969
Dw;]. No. A-l3,965
4-113
20
PROCESS YDA
Process YDA
PNP Small-Signal Transistor
Process YDA is a PNP silicon double·diffused epi·
trudal planar device designed for use in general·
purpose amplifier and switching circuits. It can oper·
ate with a collector current of up to 1A. It is the
complement to the NPN Process yeA.
SQ.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ...................... 1000mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
YDA
0.031" x 0.031"
ALTERNATE PROCESS: DJC
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Ic=10mA
Min.
50
Limits
Typ.
Max.
90
V(BR)EBO
IE= 1O ILA
6.0
7.5
-
V
V(BR)CBO
Ic=1001LA
80
135
-
V
ICBO
VcB =80V
-
-
100
nA
lEBO
VEB=5.0V
-
-
100
nA
-
500
-
VBE(sat)
VCE=5.0V,lc=1.0mA
VcE =5.0V,l c =100mA
VcE =5.0V,l c =500mA
Ic =100mA,I B=10mA
Ic=500mA, IB=50mA
Ic =500mA,I B=50mA
fT
CCb
Ceb
VcE =10V, Ic=50mA
VcB =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
100
Characteristic
Coliector·Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Coliector·Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Symbol
V(BR)CEO
Collector· Emitter
Saturation Voltage
VCE(sat)
Base·Emitter
Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Input Capacitance
hFE
Test Conditions
4-114
50
25
-
-
-
230
230
200
0.06
0.18
0.92
240
15
125
Units
V
-
-
0.2
0.5
1.1
V
V
V
-
MHz
pF
pF
30
150
PROCESS YDA
Typical Characteristics
alTA
=
+25°C
h AS A FUNCTION
OF COLLECTOR CURRENT
hFE AS A FUNCTION
OF COLLECTOR CURRENT
ttL
I--LJ-1
...
300
400
..
300
""'c~
VCE=-l~'y
200
~
-
..
1::.
I...... -
o
:0
::~
Ve ,
5V~
&la.
I
5
~z
\
111111
z~
100
"co
II
10.001
0.01
0.1
1.0
10
200
~
0
VcE =-1V
o
250
100
---- -- --
................... ............
----- -- ---
150
.............
100
VCE=-10
---
\
\
\
50
100
1000
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
Ow:!
Dwg. No. A-13,973
No. A-13,972
VsElsa.) AS A FUNCTION
OF COLLECTOR CURRENT
VcElsa.) AS A FUNCTION
OF COLLECTOR CURRENT
11
~JII II I
w
':;
r;?
:;;
1.0
B =O.llc
w
\1f:j
r;?
1
0.9
z
I
Q
I<
a:
II
0.8
:0
I<
w
a:
~
07
V
'=
":l:
~
........ 1-0.5
I
I--
06
0.1
I
1.0
I
I
10
1000
100
COLLECTOR CURRENT IN rnA
COLLECTOR CURRENT IN rnA
0"'9. No. A-13,974
Owg. No, A-13,975
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VSEION) AS A FUNCTION
OF COLLECTOR CURRENT
t---I~-+-+++++-I-I
........
05
~---'---'-'--"-LLlil
1.0
O~__~~-L~LU~__~__i-~-LLU~~C'~'
__---"----"---'--JJiliL__--'----"--L.L..LlJ-'J
10
100
COLLECTOR CURRENT IN rnA
0.1
1000
1.0
REVERSE BIAS IN VOLTS
10
Dwg, No. A-13,971
Dwg. No. A-13,976
4-115
20
PROCE.SS YFA
Process YFA
NPN Power Darlington Transistor
Process YFA is a double-diffused epitaxial planar
NPN silicon Darlington pair. It is deSigned for use in
high-gain, high-power amplifiers. Its complement is
the PNP Process YJA.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ......................... 7.OA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
YFA
0.063" x 0.067"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
60
Limits
Typ.
Max.
100
V(BR)EBO
IE= 1O f.LA
6.0
8.6
-
V
V(SR)CBO
Ic=100f.LA
80
120
-
V
Icso
VcB =80V
-
-
1000
nA
IEso
VEB =6.0V
-
-
1000
nA
-
6.3k
8.8k
4.3k
0.86
0.92
1.6
-
10
14
Symbol
V(SR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Output Capacitance
Input Capacitance
VBE(Sat)
VcE =5.0V,l c =500mA
VcE =5.0V, Ic=1.0A
VCE = 5.0V, Ic = 5.0A
Ic=500mA,ls=1.0mA
Ic=1.0A,ls=2.0mA
Ic=1.0A,ls=2.0mA
COb
Cib
Vcs =10V, f=1.0MHz
VEB =0.5V, f=1.0MHz
hFE
4-116
-
-
-
Units
V
-
V
V
V
pF
pF
PROCESS YFA
Typical Characteristics
alTA = +25°C
hFE AS A FUNCTION
OF COLLECTOR CURRENT
14K
II
12K
W~v/ ~
10K
1::::: .....
,~
BK
VCE=5V
~'
./
4K
~
2K
\
i""-r-..
,
1\
\
~ --r-. .
len,
~--
II
\
\
\
\
\
,
\
1.0
COLLECTOR CURRENT IN AMPS
10
Ow;!. No. A-I3, 977
VBE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sal) AS A FUNCTION
OF COLLECTOR CURRENT
rtJ
b
3.0
2.5
51
;;;;
'"b
51;;;;
w
Ils=O.OO2lc
~
I
15
t;:
v
11,~0.002Ie
I
J
51
!I
a:
/
.../
2.5
,/
2.0
::l
~
V
a:
w
~
1.5
"Ww
V
......
~
,
1.0
1.0
10
COLLECTOR CURRENT IN AMPS
0.1
1.0
COLLECTOR CURRENT IN AMPS
DWl. Nc>. A-13,979
10
DWJ. No. A-J3,980
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
3.0
[/11
'"b
51;;;;
2.5
w
VCE=V
~
51
Z
a:
~
1.5
~~
~,;
;;;;
/
~ 30~~~~~~-+++H+--~--+-~44~~~
I
VCE=5V
2.0
P
":::
't;.
V
~;.
; ------ :::r:: _
I
t;.
VeE= 10V
15
~
~
1.0
COLLECTCR CURRENT IN AMPS
20
~
10
__
10 f---+--++-+++-H+---+--+-++-+~'i-/..._~~
1.0
REVERSE BIAS IN VOLTS
IlwJ, Nc>. A-13,9BI
4-117
10
D~.
No. A-13,978
20
PROCESS YJA
Process YJA
PNP Power Darlington Transistor
Process YJA is an epitaxial planar PNP silicon
Darlington transistor. It is designed for use in highgain, high-power applications. It is the PNP complement to Process YFA.
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ic ......................... 7.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
YJA
0.063" x 0.067"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Static Forward Current
Transfer Ratio
Ic=10mA
Min.
60
Limits
Typ.
Max.
100
-
V(BR)EBO
IE= 10fLA
4.0
6.0
-
V
V(BR)CBO
Ic=100fLA
60
100
-
V
ICBO
Vcs=60V
-
-
1000
nA
lEBO
VEs=4.0V
-
-
1000
nA
-
-
-
-
4.4k
7.8k
16k
0.77
0.82
1.5
-
21
40
-
Symbol
V(BR)CEO
Test Conditions
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
Output Capacitance
Input Capacitance
VBE(Sat)
VCE=5.0V, Ic=500mA
VcE =5.0V, Ic=1.0A
VCE=5.0V, Ic=5.0A
Ic =500mA,I B=1.OmA
Ic=1.0A,IB=2.0mA
Ic =1.0A,I B=2.0mA
COb
Cib
Vcs =10V, f=1.0MHz
VES = 5.0V, f = 1.0 MHz
hFE
4-118
-
-
Units
V
-
-
-
-
-
-
V
V
V
pF
pF
PROCESS YJA
Typical Characteristics
at TA = +25°C
hFE AS A FUNCTION
OF COLLECTOR CURRENT
25K
20K
/
15K
//
10K
.
5.0K
o
b== ~
]IJ
......... .............
,.
. ,.
--
.......
1<'"
_I--"
0.1
JJJ
v
"
~ln
1.0
10
COLLECTOR CURRENT IN AMPS
Dwg, No. A-13,986
VBE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
VeE(sa!) AS A FUNCTION
OF COLLECTOR CURRENT
00
3.0
!:J
2.5
§I
;;:;
UJ
1 1
Ils =O.0021 c \
.,.....--V
~
§I
vi-"
2.0
I
11,~0.002Ic
i5
I<
a:
~
1.5
00
a:
UJ
e-
/v
tc
"~
1.0
~v
§
o
0.1
~
10
1.0
COLLECTOR CURRENT IN AMPS
0.5
0.1
10
1.0
COLLECTOR CURRENT IN AMPS
Dv.g. No. A-13.984
Dwg. No. A-13.983
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
VBE(ON) AS A FUNCTION
OF COLLECTOR CURRENT
30
00
b
§I
2.5
~
2.0
..
§I
~
1.5
a:
~
"
:l:
~
50P--
vc,I~-JVV
;;:;
'Ii
;;:;
Vce= - 5V
~_~
10V
>"
-~ :: 'i~1 II
40
-
R--_
""" ....... .. .. G,b
t·
'"
~ 30~-4--~~++~--+-~,'r+..H+~~
~ 2O~--4--+-+~-H+r---1--+-~~~~--~
1.0
0.5
o0.1
1.0
COLLECTOR CURRENT IN AMPS
°oL.,----'----'---.L...L---'-'--LL,.L.0-------'---'-.LJ-'-'--'-'-,"oO--~2·0
10
REVERSE BIAS IN VOLTS
D'Iog. No. A-13.985
4-119
Dwg. No. A-13,982
PROCESS NJ01
Process NJ01
N-Channel Junction Field-Effect Transistor
Process NJ01 is an N-channel junction field-effect
transistor designed for low-current and audio applications. This device exhibits very low gate leakage
current and high input impedance.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -65°C to+175°C
NJ01
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Characteristic
Gate-Sou rce
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Input Capacitance
Feedback Capacitance
Symbol
V(BR)GSS
Test Conditions
IG=1.0IJ-A, Vos=OV
IGSS
VGs =20V, Vos=OV
loss
Vos=10V, VGs=OV
VGS(Off)
Min.
40
0.016" x 0.016"
Limits
Typ.
Max.
50
Units
V
1.0
10
pA
0.03
-
0.6
mA
Vos=10V,lo=1.0nA
1.0
-
5.5
V
gls
Vos = 10V, VGS = OV, f = 1 kHz
-
175
-
IJ-S
CISS
CRSS
Vos=10V, VGs=OV, 1=1 MHz
Vos=10V, VGs=OV, f=1 MHz
-
2.0
0.9
3.0
1.5
pF
pF
4-120
-
PROCESS NJ01
Typical Characteristics
alTA
=
+25°C
DRAIN CURRENT
AS A FUNCTION OF VDS
Drs
AS A FUNCTION OF VGS!.")
250
250,--------,-----,-----,------,
I
200
(
2.5V
~
I
;;;
200
v
UJ
U
Z
~: {,.•••••••• v:~::_0;5.':. ___________________________ _
~::>
"
~
:
50
" ----
1/
v_GS~~~
..I'"&l
150
I
z
__ L_____ _ ____ _
,-
100
VGs-=--1,~.5.:.V_+-_-+---_j
I
50 0
1.0
1000
/
V
200
2.0
Vos ==
100
5.0
I
/
V
L
V
O. 1
4.0
6.0
./
10
1.0
3.0
/v
ov
~
E
,/
,,/
1.0
5.0
O~
1000
:/
4.0
LEAKAGE CURRENT
AS A FUNCTION (\F TEMPERATURE
800
V
3.0
Owg. No. A-B,990
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGS!.")
400
2.0
G","E-SOURCE CUTOFF VOLOOE IN VOLTS
DRAIN TO SOURCE VOLTAGE IN VOLTS
Dwg. No. A-13,988
600
V-
6.0
25
/'
50
75
100
125
150
AMBIENT TEMPERATURE IN °C
GATE-SOURCE CUTOFF VOLOOE IN VOLTS
OM]. No. A-13,989
Owg. No. A-13,981
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
4.0,------,---,--,-rrTTT,----,--,-,--TTTTrr----,
2.0,------,---,--,-rrrrr,----,--,-,--TTTTrr----,
'Ii
3.0
~
f------+----++H-++-t+---t-++--+--:+-H-I------I
J
i
~
i
1.0f---t-++--H--t+-t-t--+---+-+-+++t-t+----I
~L.1-~~~-LLL~1.0~~-L-~~~10~~20
1.5
f------+----++H-++++-----+-+-++-+++t+------1
1.0 ______ ___ _ __ _
v" OV
V
05f---t-++--H--t+-t--+-:,--.:1-0V-f-----t----r-+--t-+t-t+----I
~L.1-~~~-LLLU1~.0-~-L-~~~10~~~'
GI'J£-SOURCE VOLTAGE IN VOLTS
G","E-SOURCE VOLOOE IN VOLTS
Ol'tg N"'. A-13,99l
O\l,(j. No. A-I3,992
4-121
PROCESS NJ16
Process NJ16
N-Channel Junction Field-Effect Transistor
Process NJ16 is an N-channel junction field-effect
transistor designed for low-current, general-purpose
applications. This process is particularly useful in
applications that require high breakdown voltages
and low noise.
SQ.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 rnA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
NJ16
0.017" x 0.017"
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Sou rce
Cutoff Voltage
Forward
Transconductance
Input Capacitance
Feedback Capacitance
Noise Voltage
Symbol
V(BR)GSS
Test Conditions
IG=1.0""A, Vos=OV
IGSS
VGs =30V, Vos=OV
-
10
100
pA
loss
Vos = 15V, VGS = OV
0.2
-
9.0
rnA
VGS(off)
Vos=1511, lo=1.0nA
0.8
-
5.5
V
gfs
Vos =15V, VGs=OIl, f=1kHz
-
2.2
-
mS
CISS
CRSS
eN
Vos = 1511, VGS = OV, f= 1MHz
Vos=1511, VGs=OV, f=1 MHz
Vos =10V, VGs=OIl, f=10Hz
-
-
3.0
1.0
6.0
7.0
3.0
30
pF
pF
4-122
Min.
50
-
Limits
Typ.
Max.
60
Units
V
JL
VAl
PROCESS NJ16
Typical Characteristics
atTA
=
+25°C
DRAIN CURRENT
AS A FUNCTION OF Vos
Dis
AS A FUNCTION OF
3.0
2000
;;;;
zw
1500
a:
a:
IVGS(Off)-
1000
E
-2.ovl
;;;;
w
0
~
VGS= -O.5V
......................................
_---- ............ -_ ......-
::J
2.0
&lz
1.5
"a
,
l
"
2.5
z
I,
::J
0
l1a:
r ___ J£L5V
I---~::-
3. OI---Vos=15V
15V
- --- -10= 0.011D55
-
--- --
10 = loss
lK
10K
lOOK
FREQUENCY IN Hz
Dwg. No.A-13,994
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
'is.
1
-
-- - -
-~
=-=::'::,:
3.0 f----+--+-+--t--1'+1*----f-+-H+H-tt-----i
\<
~
--- .::::...... r-...---
i~
.. -=-=
2.0
~
~
;;;;
1.0
0.1
0
I
o
o
..........
1()()
INPUT CAPACITANCE
AS A FUNCTION OF VGS
5.
6.0
4.0
2.0
3.0
5.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
1.0
10
2.0-
K
---II.!>~:~~ :::-1::-1:::_
1.0 ~~..j.-...--j.=i-..-J.-If..I-.I~V;;.:os:;;~1;;5V~~~*'I:E~-~-...
0l;,~
------ --- ---- -
. .,
~~.1-~-L-~~~1.~0-~-L-~~~1~0-~2·0
20
GArE-SQURCE VOLllIGE IN VOLTS
GATE-50URCE VOLllIGE IN VOLTS
Dwg.
D'M;I. NO.A-13,998
4-123
f\t),
A-I3,993
PROCESS NJ26
Process NJ26
N-Channel Junction Field-Effect Transistor
Process NJ26 is an N-channel junction field-effect
transistor designed for general-purpose amplifier applications at frequencies of up to 450 MHz.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
NJ26
0.016" x 0.016"
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Input Capacitance
Feedback Capacitance
Noise Figure
Test Conditions
IG=1.0JJ.A, Vos=OV
IGSS
VGs =20V, Vos=OV
-
10
100
pA
loss
Vos =15V, VGs=OV
2.0
-
22
mA
VGS(OIf)
Vos=15V,lo=1.0nA
1.0
-
5.0
V
gls
Vos = 15V, VGS = OV, f= 1kHz
-
6.0
-
mS
C1SS
CRSS
NF
Vos = 15V, VGS =OV, f= 1 MHz
Vos=15V, VGs=OV, f=1MHz
Vos= 15V, VGS = OV,
f=1kHz, RG= 1MQ
-
4.3
1.0
-
-
5.0
1.5
2.5
pF
pF
dB
4-124
Min.
30
Limits
Typ.
Max.
40
Symbol
V(BR)GSS
Units
V
PROCESS NJ26
Typical Characteristics
atTA
=
+25°C
DRAIN CURRENT
AS A FUNCTION OF VDS
grs
AS A FUNCTION OF
1o,----,-------,-----,----,
8.0
./
8. 0
Iv",,,,- 2.5vl
(
v,,~ -0 5V
/ /•••••••••••••••••••••••••••••••••
60
40 [/
______
VGS(off)
10
6. 0
v<;..=_~~ _______ _
~
V
4. 0
r--
1..",.---
i/
1
2.0
r,r
_--+-----+V;:=-~--
2. 0
0~~~~d=~~~~V=,,~~=-~2.~OV~~~~~~
o
5.0
10
15
0
20
2.0
1.0
DRAIN TO SOURCE VOLTAGE IN VOLTS
4.0
3.0
5.0
6.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
D"l. No. A-14,000
DRAIN SATURATION. CURRENT
AS A FUNCTION OF VGS(Off)
NOISE
AS A FUNCTION OF FREQUENCY
5
5
0
0
0
V
V
/
/
V
/v
)/
20 ~+++tttttt--t+t-tttttt-H-Htttrt_____t_-tttttffi
\\\
15~"
I
,
f\'
10
ID",loss
ID=0.011055
---
5.0 r--+-+++++I'llr-C::--t-f"I-Hott:H----t----H--H-tttt--H-t-tttffi
1.0
2.0
3.0
4.0
5.0
°1~0~~~~10~0~-LLll~1K~~~~1~OK~~~~100K
6.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
Owg No. A-14,404
FREQUENCY IN Hz
Dwg No, A-13,999
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
4. 0
'Ii
;;;
J
6.0
~
~
~
-~
i---t--+--+-+-+-++++-----I-t--H-Hf+++----1
0
~,-~~,
VDs=5V
4.0
-::.:::.::t:~-- -- -
0
Vos-1SV
-
-.':'~ov
..... __ .. -
~
0
2.01--+-+-++1H-1*-----I-+-+---1+t-+t+----I
0
Gm;-SOLRCE VOLlAGE IN VOLTS
r-.....
" i'- ..............
--- :rr- -
0.1
Vos=SV
Ir
-
........
- - - ....-
1.0
10
20
Gm;·SOLRCE VOLTAGE IN VOLTS
DWJ, NY. A-14,002
Ov.g. No. A-I4, 001
4-125
I
~
PROCESS NJ26L
Process NJ26L
N-Channel Junction Field-Effect Transistor
Process NJ26L is an N-channel junction fieldeffect transistor designed for general-purpose, lownoise, high-gain applications not requiring high
breakdown voltages.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -65°C to+175°C
NJ26L
0.016" x 0.016"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Input Capacitance
Feedback Capacitance
Noise Voltage
Min.
25
Limits
Typ.
Max.
30
Units
V
Symbol
V(BR)GSS
Test Conditions
IG=1.0/-LA, Vos=OV
IGSS
VGs =15V, Vos=OV
-
10
100
pA
loss
Vos=15\1, VGs=OV
2.0
-
40
mA
VGS(off)
Vos = 15\1, 10 = 1.0nA
1.5
-
6.0
V
gfs
Vos =15V, VGS = 0\1, f=1kHz
-
9.0
-
mS
C1SS
CRSS
eN
Vos =15V, VGs=O\l, f=1MHz
Vos=15V, VGs=O\l, f=1MHz
Vos = 15 V, VGS = 0V, f = 1kHz
-
5.0
1.5
1.0
-
pF
pF
-
--'l'L
4-126
-
-
VRL
PROCESS NJ26L
Typical Characteristics
alTA = +25°C
DRAIN CURRENT
AS A FUNCTION OF VDS
g"
AS A FUNCTION OF
2o,-------,--------,--------,-------,
I VOS1"ff)
.-
-
12
3.0V I
10
15~----~~------_+V~Bs~-~OV~--=F--====~
L.. - - - - - - ~'!=-~~~~----
10
I,l
VGS-=-
'Ii
~
z
o
------------
i/
6.0
z
4.0
/(
/'
8.0
~
()
ig
-1.0V
U'--- ------------ -----50
2.0
o
o
2.0
3.0
4.0
5.0
6.0
7.0
GllfE-SOURCE CUTOFF VOLTAGE IN VOLTS
Dwg. No, A-I4,OO9
1.0
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGS(Ofl)
NOISE
AS A FUNCTION OF- FREQUENCY
50
5
30
10
gu
~
_
~
V
/
1.0
:;;
;;;
6
z
v
15V
15V
I
,
10=0.01105s
..........
,
5.0
'If'
,
,
--- - lK
--- - 10K
lOOK
FREQUENCY IN Hz
Dwg. No. A-I4,OO6
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
!
3.0 f----+--+-++--If-t-1+t----j---t--+-i-t-Ht-t-----j
'-
-- _ -""""1'-.k_'
:.: ...........
r--rf
..
·-+-"-~+__H__H-+++__----=-=_r_;··~"_I_+1__H+l_--__1
' ~
,
2.0 f----+.cVo-,-"'s"'vH+1+t-F"-"",........-=+-_-+--+-f---HCtt-------j
" ·-,...·,~".L~_
f-
~~
;;;
2.0 f----+--+-++-f-t-1+l_--__1--+--H-+-I-H+---'-'\
5'
,
100
6.0r--~V
4.0 -
I Vos =
\
w
INPUT CAPACITANCE
AS A FUNCTION OF VGS
1.
.:::- V=:t~
"
\
~
§2
/
/
01\.
w
2.0
3.0
4.0
5.0
6.0
7.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
Dwg. No. A-14,01O
l
8.0
~
1/
V
20
"
1:1'
-.:(
I
IlllJ
,
/
40
'Ii
V
/
DRAIN TO SOURCE VOLTAGE IN VOLTS
Dwg. No. A-I4,005
o
o
VGS(olt)
~==- =I=-= Vos=15V
~
- --~
1.0 f----+--+-++1I-H+l_--__1--+-+-i--+-H-++----j
~~.1--~--l-LJ-U~1~O--~--~LJ-LLU~10--~20
0~0.1~~--L-LJ-U~1~.0--~--~LJ-LLU~10--~2'0
GllfE-SOURCE VOLlAGE IN VOLTS
GATE-SOORCE VOLlAGE IN VOLTS
Dwg No. A-14,OO7
4-127
i
PROCESS NJ28D
Process NJ28D
Dual N-Channel Junction Field-Effect Transistor
Process NJ28D is a monolithic dual N-channel
junction field-effect transistor. It is similar to Process
NJ35D, but has a wider range of operating current
and higher gain.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 rnA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -65°C to+175°C
NJ28D
0.026" x 0.026"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Limits
Typ.
Max.
35
-
Characteristic
Gate-Sou rce
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Input Capacitance
Feedback Capacitance
Noise Voltage
Symbol
V(BR)GSS
Test Conditions
IG=1.0/LA, Vos=OV
IGSS
VGs=15V, Vos=OV
-
50
loss
Vos =15V, VGs=OV
5.0
VGS(Off)
Vos =15V, lo=1.0nA
gfs
C1SS
CRSS
eN
Differential
Gate-Source Voltage
VGS1-VGS2 VOG=10V,lo=5.0mA
Min.
25
Units
V
100
pA
-
40
rnA
1.0
-
8.0
V
Vos = 15V, VGS = OV, f= 1kHz
-
7.5
-
mS
Vos=OV, VGs=10V, f=1 MHz
Vos=OV, VGs =10V, f=1 MHz
Vos =15V, VGs=OV, f=1kHz
-
-
-
pF
pF
-
4.5
1.7
7.0
-
.JDL.
v'HZ
-
15
50
4-128
mV
PROCESS NJ28D
Typical Characteristics
at TA = + 25°C
DRAIN CURRENT
AS A FUNCTION OF Vps
10~'~--~--
I
-3.0V
VGS(Uff) -
gf.
AS A FUNCTION OF
----,----,-----,
0
I
9.
0
---
15 f--
j. ------------ !:.':-:~:~----- ------------
j,,'
10
VGSloff)
------ Vc,:-l~V-V,,- 1.OV
j~(/
o -_.
/v
0
-------
/
6. 0
1/
5.0
5.0
10
15
0
10
1.0
DRAIN TO SOURCE VOLTAGE IN VOLTS
OW!]. No. A-14,OIl
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGSloff)
6.0
1.0
3.0
4.0
5.0
GIlfE-SOURCE CUTOFF VOLTAGE IN VOLTS
Owg. No. A-14,015
NOISE
AS A FUNCTION OF FREQUENCY
0
0
-"
5
0
0
10
/
10
o
o
1:1'
V
1/
..:::.
~
;;;
11
'-
~
a
IIIIIII
I Vas ='15V I
ID-~O.Olll)ss
---
0
w
-
........
5
--
.............
>
w
U>
az
-
0'~ss
0
/
1.0
--
4.0
6.0
8.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
D'M], No.
0
10
10
100
lK
lOOK
10K
FREQUENCY IN Hz
A~14,0I6
Dwg. No. A-14,0I2
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
10,--,---,-,,,,,,,--,-,-,,,,-rr,---,
'Ii
8.0
~
6.0
~
J -::::-~
~
~
40
~;;;
1.0
\3..
vJOV+-t+t+1+---+-l-l-++++++--
V,,"l5V
;;;
J
r-
~
:::::::';:t-- f~ - -
4.0
f..--+--+++-l-++++---f-+--H-+-I-+++-----!
P--r-_
Vos=OV
3.0 f---+--+-+-+-I-R"I-f.O___
:;:,-:'-'-t-t-H-H'+t+-----J
~
~():
1----+----f-++-+-+++-f----+--+-++-+-H"f'I=':::::-.""_~:::
~
f----j---+-++-t-++++----t-+--H-+-I4++-----!
fill!'
_
°O~.l-~-L-~~~l~.O-~-L-LJ-U~l~O-~~
1.0 ------ --- __
~--
~ .
V,,"5V
.................. .....
~~5ii---
-- -...
:.:::.:~
1.0f----t--+-t--H+t-tt----t-t-H-Hr+t-t----i
OL-_L--LJ-LLLU~-~-L-L~~~-~
0.1
GATE TO SOURCE VOLllIGE IN VOLTS
1.0
GllfE TO SOURCE VOLllIGE IN VOLTS
10
DW;;. No. A-14, 013
Dwg. No. A-14,014
4-129
~
PROCESS NJ32
Process NJ32
N-Channel Junction Field-Effect Transistor
Process NJ32 is an N-channel junction field-effect
transistor designed for use as a general-purpose
audio amplifier. It is similar to Process NJ16 in basic
design, but has higher gain and lower ON resistance.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
NJ32
0.018" x 0.018"
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Sou rce
Cutoff Voltage
Forward
Transconductance
Input Capacitance
Feedback Capacitance
Noise Figure
Symbol
V(BR)GSS
Test Conditions
IG=1.0f,lA, VDS=OV
IGSS
VGs =15V, VDS=OV
-
10
100
pA
IDSS
VDs =15V, VGs=OV
1.0
-
22
rnA
VGS(Off)
Vos=15V, ID=1.0nA
1.0
-
6.0
V
gls
Vos = 15V, VGS = OV, f = 1kHz
-
5.0
-
mS
C1SS
CRSS
NF
Vos=15V, VGs=OV, f=1 MHz
Vos=15V, VGs=OV, f=1MHz
VDs =15V, VGs=OV,
f = 1kHz, RG = 1 MO
-
6.0
1.3
1.0
7.0
3.0
2.5
pF
'pF
dB
4-130
Min.
25
-
-
Limits
Typ.
Max.
50
-
Units
V
PROCESS NJ32
Typical Characteristics
al TA = +25°C
DRAIN CURRENT
AS A FUNCTION OF Vos
gt,
AS A FUNCTION OF
10,--------,--------,--------,--------,
8.0
/
(
VGS(Dffl
0
2 5V I
0
-_ .. --------- --------_ .. --
------------
V
/
0
20
15
10
o
o
20
2.0
DRAIN TO SOURCE VOLTAGE IN VOLTS
4.0
5.0
Owg. No. A-14,021
Owg, No. A-14,OI7
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGS(DHI
NOISE
AS A FUNCTION OF FREQUENCY
30
5
""
/
25
/
/
20
l~
1"
/
15
10
50
V
/
o
o
lo-=-OO11[)ss
01'..
"
w
~
"
"'1'
!
~DSS
~
~
,
50
6
!
--- -.. -
..
z
l6.0
i
0
10
80
I
-
I
I
40
I
1ill
[Vco ~ 15V I
"
,
;<;
/
20
10
8.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
I
100
1K
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
lOOK
10K
FREQUENCY IN Hz
Ow:).
NV. A-14,022
Dwg. No. A-14,OIB
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
10
I
'ti
P---
J; - - rt",
-
80
;<;
:::
':5.
u
100
20
15
r------~---------
I
-----
6.0
-----
VGS(D'O
6.0
~!-i':
1"---__
~ov
VDF5V
2.0 ~::::- --- -
V,,~15V
........... ,
'.
----.:.:~
'.
•
~
1.0 f--~-+--+-+-t-t--1--1--1+~----t~+-t-t-+-t-+++-----I
°0~.1~~~L-~-U~1~.0~:-'-~~-LUU~10~~~
20
GATE TO SOURCE VOLTAGE IN VOlTS
GATE TO SOURCE VOLTAGE IN VOLTS
Dwg No. A-14,025
Dwg No, A-14,026
4-133
PROCESS NJ42
Process NJ42
N-Channel Junction Field-Effect Transistor
Process NJ42 is an N-channel junction field-effect
transistor designed for use as a high-voltage, general-purpose amplifier in applications requiring the
high input impeadance of a JFET.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -65°C to+175°C
NJ42
0.032" x 0.032"
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Input
Capacitance
Feedback
Capacitance
Noise Voltage
Symbol
V(BR)GSS
Test Conditions
IG=1.0fLA, Vos=OV
IGSS
VGS = 15011, Vos = OV
-
1.0
10
nA
loss
Vos=3011, VGs=OV
2.0
-
B.O
mA
VGS(Off)
VOS = 30 V, lo=4.0nA
4.0
-
12
V
gls
Vos =30V, VGS = OV, f = 1kHz
-
BOO
-
fLS
C1SS
Vos = 3011, VGS = Oil, f= 1MHz
-
7.5
10
pF
CRSS
Vos = 30V, VGS = OV, f= 1MHz
-
2.0
5.0
pF
eN
VOS = 15V, VGS = OV, f = 1kHz
-
10
-
4-134
Min.
300
Limits
Typ.
Max.
400
-
Units
V
..Jf:L
\1Hz
PROCESS NJ42
Typical Characteristics
at TA = +25°C
DRAIN CURRENT
AS A FUNCTION OF VDS
gill
AS A FUNCTION OF
VGS(Off)
1.2
I VGS(Olt)
CO-
4 OV
I
5.0f-------+------+-
--
1.0
U)
E
;;:;
w
0
VGS;-
0.8
/'
z
1V
................................
~
0
0
:>
:;
0.6
z
0
&l
~
a:
0.4
t-
0.2
5.0
10
o
2.0
15
4.0
DRAIN TO SOURCE VOLlAGE IN VOLTS
Ow;). No.
A~14.029
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGS(Off)
w
100
a:
a:
./
6.0
:>
0
z
Q
~
a:
:>
4.0
~
U)
w
~
i3
~
/
2.0
V
V
~
60
w
~~
,,
~
is
z
6.0
,
,
........
"
-- ---
20
0
12
80
10
GArE-SOURCE CUlOFF VOLTAGE 'N VOLTS
IIJ-O.01Ioss
- Il~·lt
'1"1[1'' ""
10
100
1K
FREQUENCY IN Hz
w
0
z
~~
CL
;;:;
-.. . .
10K
100K
Ow;). No. A-14.030
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
15
J
~
I
"\'"
40
INPUT CAPACITANCE
AS A FUNCTION OF VGS
"~
033
,
01'0<] No. A-14,034
;;:;
A~14,
Jj
80
~
0
4.0
12
NOISE
AS A FUNCTION OF FREQUENCY
8.0
'E"
;;:;
fZ
6.0
80
10
GPJ'E-SOURCE CUTOFF VOLTAGE IN VOLTS
Ow;!. No.
10
..........
p--
5.0
..........
K
Vos=5V
.............
~
--- ----t--
"-
VDs=15V
-~
-...:,::
OL-_l--L~LlLUl-
°OL.1-~-L-~~~1L.0-~-~~-LLU1l0-~20
0.1
GATE 10 SOURCE VOLll\GE IN VOLTS
Dwg. No. A-14, 031
__~-L-L~~~_~
1.0
10
20
GATE TO SOURCE VOLTAGE IN VOLTS
OW]. No. A-Ill. 032
4-135
PROCESS NJ99
Process NJ99
N-Channel Junction Field-Effect Transistor
Process NJ99 is an N-channel junction field-effect
transistor designed for use as either a general-purpose, high-gain amplifier or as a switch. Selected
devices can be matched to a 750 input.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
NJ99
0.021" x 0.021"
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Characteristic
Gate-Sou rce
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Drain-Source
'ON' Resistance
Input Capacitance
Feedback Capacitance
Limits
Typ.
Max.
40
Symbol
V(BR)GSS
Test Conditions
IG=1.0fJ.A, Vos=OV
IGSS
VGS = 15V, Vos = OV
-
10
100
pA
loss
Vos=15V, VGs=OV
5.0
-
90
mA
VGS(off)
Vos=15V,lo=1.0nA
1.0
-
5.5
V
gfs
Vos = 15V, VGS = OV, 1= 1kHz
-
22
-
mS
ros
lo=1.0mA, VGs=OV
-
40
-
0
CISS
CRSS
Vos=OIl, VGs =10V, 1=1MHz
Vos=OV, VGs =1011, 1=1 MHz
-
6.5
2.5
-
pF
pF
4-136
Min.
25
-
-
Units
V
PROCESS NJ99
Typical Characteristics
at TA = +25°C
DRAIN CURRENT
AS A FUNCTION OF VDS
J--___
ofs
AS A FUNCTION OF
~,-------.-------~--------,-------,
VGS(Dffl
30
-t--:v~"-o~v-t------j
4Or---~7L[[~V'~";;;")~]3]"OV~[li.'~I;,~::;;.-=
__iDO;'55ii.V.':_-:: _t_-:: _.=___:=_:__=_=1
__
.........................
-/,l "," ------
3D
I
VGS
,......
1.OV
25
_
,/ ,,'VGS= -1.5V
20 ~/f--=:+=::=:==:j=-=:.~==r=~-j
;~
10
V,,~-2.0V
ro
f-fI--------:d..--~:F~:::::=J:======j
~ ...................................." ..~:~.:..:.::~.~..........................................
00""
5.0
10
15
20
V
4.0
5.0
6.0
Dwg. No. A-14,038
rDS
AS A FUNCTION OF
100
VGS(Dffl
0
/
0
60
0
0
3.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGS(Dffl
0
2.0
1.0
DRAIN TO SOURCE VOLTAGE IN VOLTS
Dwg. No. A-14,035
/
/
--
~
V
V
0
/
60
""
0
,/
1.0
~
0
t-....
0
2.0
3.0
4.0
5.0
0
20
6.0
GIITE·SOURCE CUTOFF VOLTAGE IN VOLTS
DW]. No. A-14,039
1.0
2.0
..............
--
3.0
r--
4.0
5.0
6.0
GATE·SOURCE CUTOFF VOLTAGE IN VOLTS
Dwg. No, A-14,037
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
°0~.1--~--L-~-U~1L.O--~--~~-LLU1Lo--~ro
°OL.1--~--L-~~~1L.O--~--L-~-U~1~0--~20
GiITE·SOURCE VOLTAGE IN VOLTS
GilTE-SOURCE VOLll\GE IN VOLTS
Dwg. No, A-14,040
4-137
PROCESS NJ132
Process NJ132
N-Channel Junction Field-Effect Transistor
Process NJ132 is an N-channeljunction field-effect
transistor designed primarily for high-speed switching applications, such as low ON resistance analog
switching.
SQ.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
NJ132
0.022" x 0.022"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Drain-Source
'ON' Resistance
Input Capacitance
Feedback Capacitance
On Time
Off Time
Test Conditions
IG=1.0ILA, Vos=OV
IGSS
VGs =20V, Vos=OV
-
10
100
pA
loss
Vos = 20 V, VGS = OV
10
-
150
mA
VGS(Off)
Vos=20V, lo=1.0nA
0.5
-
7.0
V
ros
lo=1.0mA, VGs=OV
-
25
-
n
CISS
CRSS
tON
tOFF
Vos = 20 V, VGS = Ov, f= 1MHz
Vos=Ov, VGs =10V, f=1MHz
Voo=10V,lo=6.0mA
Voo=10V,lo=6.0mA
-
12
2.5
10
45
-
pF
pF
ns
ns
4-138
Min.
30
Limits
Typ.
Max.
45
-
Symbol
V(BR)GSS
-
-
20
55
Units
V
PROCESS NJ132
Typical Characteristics
at TA = +25°C
DRAIN CURRENT
AS A FUNCTION OF Vos
gfs
AS A FUNCTION OF VaS(off)
40
-
....--
30
/
20
30
20
10
.......---t----.- -.----- ---
I,,'
V,"" 1.5V
'/
v"
I,
~,,---V·/
......· ............................................·· Vr.;s=
2.0V
10
2,5V
°0~~-L~~5.0~-L~~~1O~~~~1L5~~~~20
2.0
DRAIN TO SOURCE VOLTAGE IN VOLTS
4.0
6.0
8.0
GATE·SOURCE CUTOFF VOLllIGE IN VOLTS
Dwg. No. A-14,07J
Owg. No. A-14,073
DRAIN SATURATION CURRENT
AS A FUNCTION OF Vas(o")
f DS
AS A FUNCTION OF Vas(OIf)
200
60
U)
"
I
a
;;;;
./
150
100
0
/'
0
1.0
/
V
2.0
(J
V
/'
V
50
w
z
\\
;S;
~w
40
1\
\
a:
Z
"
w
~
30
::>
a
U)
g
z
;;:
20
"-....1--_
-
a:
a
3.0
4.0
6.0
5.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
7.0
2.0
8.0
3.0
4.0
5.0
6.0
7.0
GATES-SOURCE CUTOFF VOLTAGE IN VOLTS
DViIJ. No, A-14,072
FEEDBACK CAPACITANCE
AS A FUNCTION OF Vas
25
--.... -. r-
20
15
r=::::10
6.0
I:,
I
I!
\5.
5.0
;;;;
J r-4.0
--- :.: .... - ~V
~---.......
t
Vos=5V
:1':-.":: ".....
Vos=15V
, ..
w
;
f---
(J
~'"
,
~
1.0
GATE·SOURCE VOLTAGE IN VOLTS
10
-
~ 1'-_
r---~T'-"-r-*"lo±T:H+V"~5Vt--+,,,...oIo:::t++H-----1
30
;::- -
... "' ................ . .
2.0 r----i--+--t-H-t+t Vo::
15V r--- .......... ..
i'-.........
.........
--
a
w
r,."
5.0
0.1
8.0
Dwy No, A-14,076
INPUT CAPACITANCE
AS A FUNCTION OF Vas
o
10
1.0
0
0.1
20
1.0
10
20
G.AJE-SOJRCE VOLTAGE IN VOLTS
OW). No. A-!4,074
DI'otJ. NR. A-14,075
4-139
I
I
PROCESS NJ903
Process NJ903
N-Channel Junction Field-Effect Transistor
Process NJ903 is an N-channel junction fieldeffect transistor designed for very low ON resistance
analog or digital switching applications.
SQ.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
NJ903
0.040" x 0.040"
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Drain-Source
'ON' Resistance
Input Capacitance
Feedback Capacitance
Test Conditions
IG=1.0j1A, Vos=OV
IGSS
VGs =15V, Vos=OV
-
0.5
3.0
nA
loss
Vos =10V, VGs=OV
100
-
900
mA
VGS(Off)
Vos=10V,lo=1.0nA
2.0
-
7.0
V
ros
lo=1.0mA, VGs=OV
-
3.5
-
n
C1SS
CRSS
Vos=OV, VGs =10V, f=1 MHz
Vos=OV, VGs =10V, f=1 MHz
-
45
22
-
pF
pF
4-140
Min.
25
Limits
Typ.
Max.
50
-
Symbol
V(BR)GSS
-
-
Units
V
PROCESS NJ903
Typical Characteristics
alTA
=
+25°C
DRAIN CURRENT
AS A FUNCTION OF Vos
gf.
AS A FUNCTION OF
VGSloff)
200
cg
................... .....................
-=
o
i
-3.0V
Vr;s= -4.0V
6.0
8.0
100
/
I
0
10
2.0
4.0
6.0
8.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
NO, A-14,077
Owg. No, A-14,082
ORAIN SATURATION CURRENT
AS A FUNCTION OF VGS10H)
rOS
AS A FUNCTION OF
VGS10H)
0
1000
/'
0
0
/
0
2.0
8. 0
V
/
0
0
.-- ~
50
DRAIN TO SOURCE VOLlAGE IN VOLTS
Dwg
V
w
l!
~::::>
f-----if------,.L-+----+-v'"~ -2.0V",===_-1
VGS
150
;;;
6. 0
/V
\
\
I\...
.0
---- t---
2. 0
4.0
6.0
0
8.0
GIIfE-SOURCE CUTOFF VOLTAGE IN VOLTS
Dwg. No, A-14,079
2.0
4.0
6.0
8.0
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
Dwg. NO, A-14,083
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
80,------,-------,------
40,------,------,----- --
~f-----_+-----~----~
10r-----~-----_t-----~
GATE TO SOURCE VOLlAGE IN VOLTS
GATE TO SOJRCE VOLTAGE IN VOLTS
Dwg. Ml. A-14,080
Dwg. Nu. A-14, OBI
4-141
PROCESS PJ32
Process PJ32
P-Channel Junction Field-Effect Transistor
Process PJ32 is a P-channel junction field-effect
transistor designed as a complement to Process
NJ32 and for use as a general-purpose amplifier.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 mA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
PJ32
E~ECTRICAL
0.018" x 0.018"
CHARACTERISTICS at TA = + 25°C
Characteristic
Gate-Sou rce
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Input Capacitance
Feedback Capacitance
Noise Voltage
Min.
30
Limits
Typ.
Max.
50
Symbol
V(BR)GSS
Test Conditions
IG=1.0J.LA, Vos=OV
IGSS
VGS = 15V, Vos = OV
-
1.0
2.0
nA
loss
Vos=15V, VGs=OV
1.0
-
15
mA
VGS(off)
Vos=15V,lo=1.0nA
2.0
-
7.0
V
gls
Vos=15V, VGs=OV, f=1kHz
-
3.5
-
mS
C1SS
CRSS
eN
Vos=OV, VGs =10\l, f=1 MHz
Vos=OV, VGs =10V, f=1MHz
Vos=15\1, VGS = 0\1, f=100Hz
-
3.5
1.7
60
-
-
-
pF
pF
-
Units
V
..illL
VHz
4-142
PROCESS PJ32
Typical Characteristics
alTA = +25°C
DRAIN CURRENT
AS A FUNCTION OF VDS
gfs
AS A FUNCTION OF
8.0,------,--------,---------,
Ul
6.0
5.0
E
/
3.5V
w
I
u
z
4.0
1>
4.0
g
(
2.0
/ / ••••••••••
jl--,
-t
---~:,~-2-::--------------
0
3.0
~
2.0
§
go
_- ---------- ------
/1
-
...-
.:
I VGS(ofli -
VGS(Dfq
6.0
/
/'"
/
1.0
VGs'=3.DV
5.0
10
15
DRAIN 10 SOURCE VOLll\GE IN VOLTS
Dwg. No,
2.0
4.0
8.0
6.0
10
GArE-SOURCE CU10FF VOLTAGE IN VOLTS
A~14,
041
Owg. No. A-14, 046
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGS(off)
NOISE
AS A FUNCTION OF FREQUENCY
0
1000
'"
5
V
0
/
~_
/
:;;
4.0
IIIIIIII
,
........
r-
~
w
~
Ii!
w
Iv" ~ 15V I
,
,
IT
........
10"0.011,,: '
10
6.0
8.0
1. 0
10
10
........
, ,
. . . . . r-.
Ul
i5
z
/
2.0
100 r-.
"
100
lK
10K
lOOK
FREQUENCY IN Hz
GATE-SOURCE CUTOFF VOLTAGE IN VOLTS
Dwg. No. A-14, Q43
D'MJ, No, A-14,045
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
12
10
'a
.:
1
8.0
S!-
w
u
6.0
~
4.0
~
()
~
----
r-
'-,
1'- __
'"
Vos=OV
--:t'-~r ,~~
<:'
"
V","lS'V
'~
- ~~
,
r=::~
"-
.:
- ..~
2.0
o0.1
1.0
10
20
GATE TO SOURCE VOLlAGE IN VOLTS
GArE 10 SOURCE VOLll\GE IN VOLTS
0"9 No. A-14,044
Dwg. No. A-14, 042
4-143
PROCESS PJ99
Process PJ99
P-Channel Junction Field-Effect Transistor
Process PJ99 is a P-channel junction field-effect
transistor designed as a complement to the NJ99
process and for use as either a switch or as a generalpurpose amplifier. Devices from this process can be
matched to a 750 input.
ABSOLUTE MAXIMUM RATINGS
Gate Current, IG ........................... 10 rnA
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 65°C to + 175°C
PJ99
0.021" x 0.021"
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Characteristic
Gate-Source
Breakdown Voltage
Reverse-Gate
Leakage Current
Drain Saturation
Current
Gate-Source
Cutoff Voltage
Forward
Transconductance
Drain-Source
'ON' Resistance
Input Capacitance
Feedback Capacitance
Noise Voltage
Symbol
V(BR)GSS
Test Conditions
IG=1.0JJ..A, Vos=OV
IGSS
VGS = 20V, Vos = OV
-
0.5
1.0
nA
loss
Vos =15V, VGs=OV
5.0
-
60
rnA
VGS(Off)
Vos=1511, lo=1.0nA
2.0
-
8.0
V
gls
Vos=15V, VGs=OIl, f=1MHz
-
15
-
mS
ros
lo=1.0mA, VGs=OV
-
75
-
0
CISS
CRSS
eN
Vos = 15V, VGS = OV, f= 1 MHz
Vos=OV, VGs =10V, f=1MHz
Vos =10V, VGS = 011, f=1kHz
-
18
4.5
8.0
-
pF
pF
nV
4-144
Min.
30
-
Limits
Max.
TYII40
-
-
Units
V
v'Hz
PROCESS PJ99
Typical Characteristics
alTA
=
+25°C
DRAIN CURRENT
AS A FUNCTION OF Vos
g,s
AS A FUNCTION OF
50,----------,-----------,-----------,
I VGS(otl) -
3.SV
VGS(DII)
25
I
40~--------~----------_+--------__4
'"l!:E
~~--~~~-+--------~----~
. II, - - - ---,,---~,~ - - - - - - - -- - - -/
~
::>
~
15
c
B
'-'
V,,~2.0V
.' , /
20
w
'-'
z
z
'"a:
f-
5.0
10
10
/
15
2.0
DRAIN 10 SOURCE VOL1J\GE IN VOLTS
"'"
I
0
60
40
'"
~
20
/
~
a:
c
2.0
30
-
25
l!:
20
~
w
'-'
~
t'"-15
~
10
~w
100
~
&l
~z
50
"c
a:
4.0
6.0
o
o
10
8.0
4.0
2.0
6.0
8.0
Gl\fE-SOURCE CUTOFF VOLTAGE IN VOLTS
INPUT CAPACITANCE
AS A FUNCTION OF VGS
FEEDBACK CAPACITANCE
AS A FUNCTION OF VGS
~
VOS",OV
~
~
~
'"
....
Vos=:5V ' "
........ ..: ........
Vos=15V ....
~
"-
..
~
1-';:'--"
5.0
1.0
10
12~~+-_+-r~~+r--~--+_~_H~+___4
- -r-I-
V,,"OV
10~--+-_+-r~~~~~~--+_~_H~+___4
"-
8.0
~--+-_+_+__H-++*--_+"""+__H__H-+++____4
~
60
~.o;:.~••=.c::l.-.-••-t-H+f-tttV.,-,,-~:-:5V+-+-+---P-kHf-tt------I
~~W
4.0
~--+-_+-r~~++V~~:~;;t_·-·_1·
-'''1'""Hof±tt-""",--:----1
-----_.
. :..-.:..-::.-
~
2.0
~--+-_+_+_~~*----+--+_H+_t_+++___4
~
"
:::. ..
"
%L.1--~--L-~-LUU1L.O--~--~~-LLUL10--~20
20
GI\fE TO SOURCE VOL1J\GE IN VOLTS
GATE 10 SOURCE VOL1J\GE IN VOLTS
D~vg
10
OWj. No, A-14, 048
-
a.
l!:
0
0.1
1\
j$
iii'"a:
/
.............
~
()
/
150
'-'
z
GATE-80URCE CU10FF VOLTAGE IN VOLTS
OW]. No.A-l4,052
1---
'Ii
l
l!:
w
/
B
~
VGS(DII)
200
l!:
~
10
rOS
!l
~
a:
8.0
AS A FUNCTION OF
00
a:
a:
::>
'-'
6.0
4.0
GI\fE·SOURCE CU10FF VOLTAGE IN VOLTS
Dwg. No. A-14,051
DRAIN SATURATION CURRENT
AS A FUNCTION OF VGS(DII)
!J/ //
1
V /100'l ,I
1~
o
,,/
~
/
1
j
0.2
0.4
/
/
/
'25°C
/
0.6
!$'c
0.8
1.0
FORWARD VOLTAGE IN VOLTS
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
100
~
(? / / :/
1. a
0.01
//'
...... /j
/
;;
~
ns
O~
1.2
D'A9. No. A-I4,071
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
3. 0
§
VR=80V
10
1.0
O.
~
/'
~
1
0.0001
~VR=20V
Or:--5
~
..,. ,~.; '
0.01
0.00
,
2. 5
.. VR =50V
","'"",
'''L
..
,
L
1~
/.-,,,:,',,"
~'
. ,""
./'
'
/;,,/
"
0
///
r::::: .. /
-55
-15
25
---
.....
~ ..........
O. 5
65
105
JUNCTION TEMPERAfURE IN "C
145
Ow;,. No.
0
0.1
185
1.0
REVERSE VOLlAGE IN VOLTS
A·I~072
4-152
--
1.4
PROCESSTRB
Process TRB
Medium-Speed Switching Diode
Process TRB produces a non-gold-doped silicon
epitaxial diode designed as a low-leakage, mediumspeed switching device. It has a typical breakdown
rating of BOV.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 15) ............. 500 mA
(Pulse Width = 1f,ls) ............. 2.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
TRB
Characteristic
VBR
IR
VF
CJ
t"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
=+ 25°C
ELECTRICAL CHARACTERISTICS at TA
0.015" x 0.015"
Limits
Test Conditions Min. Typ. Max. Units
V
IR=10f,lA
50 80 VR=50V
- 0.5 10 nA
IF=10mA
- 820 1000 mV
VR= OV,
3.0 5.0 pF
f= 1 MHz
40 100 ns
IF=IR=10mA -
1000
"
;/
/1
,,
,
E
I
0
II
;
I
/
150 C /
O
I
1~
0.01
o
~~
//
/
/;/ /25"C !55C
I
O.
~
"
I
I
;
0.2
!
/ffJQoC
/
0.4
I
0.6
J
0.8
1.0
FORWARD VOLTAGE IN VOLTS
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
1.4
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
0.01
3.0
v:
~.
/
,,,I"
/
0.00 1
......... _--- ..............
-,....,....,.. . ............
55
-15
V:"
"
"
- ---"
/
VR-SOV
............,'
/
,,"
,
2.5
e--. ......... r--
"
,/l
0.0001
1.2
D"l. No. A'I~076
/
/
/
/
2.0
~
I
1.5
1'-1'-
V,~20V
/
./'
25
65
1~
JUNCTION TEMPERATURE IN 'C
1.0
145
Oligo
165
No. A·I•• 075
4-153
O. 5
0.1
.............
1.0
REVERSE VOLTAGE IN VOLTS
10
20
O"l. No. A-I~07'
PROCESSTRJ
Process TRJ
Silicon Rectifier Diode
This silicon epitaxial diode is a 200 V, 1.0A rectifier
designed to meet 1N4001 , 1N4002, and 1N4003
specifications.
ABSOLUTE MAXIMUM RATINGS
Peak Repetitive Voltage, VRRM ................. 200V
Peak Reverse Working Voltage, VRWM ' .......... 200V
DC Blocking Voltage, VR ..................... 200V
Non Repetitive Peak Reverse Voltage, VRM
(Half-Wave 60 Hz Peak) ................ 200V
Input Voltage (rms) ......................... 140V
Average Rectified Forward Current, 10 ........... 1.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
TRJ
0.040" x 0.040"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA
=+ 25°C
Limits
Test Conditions Min. Typ. Max. Units
V
200 350 IR= 1O fLA
VR=300V
5.0 100 nA
IF =1000mA
990 1100 mV
VR=10V,
6.0 8.0 pF
f=1MHz
Characteristic
VBR
IR
VF
CJ
1.25
1.5
FORWARD VOLll\GE IN VOLTS
Dwg. No. A-14,079
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
1000
100
4
F
o~~
1. 0
~
-----
....................
~
ii;:200V
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
30
~
25
~'~
,~
~:;
,
I TA~25'C I
f""""""-..
/ ' ,~,:.,~
,~
r-~ r--.,
/'
.............
///
.1
r-
5.0
///
VR =1DOV
1
-20
30
eo
130
JUNCTION TEMPERATURE IN 'C
Dwg. No. A-I4,Q77
1.0
180
10
REVERSE VOLll\GE IN VOLTS
0"9- No. A·14.078
4-154
20
PROCESS TRL
Process TRL
Silicon Rectifier Diode
The TRL process yields a 400 V, 1.0A rectifier with
a relatively large anode bonding pad on a 43-mil chip.
The silicon epitaxial diode meets 1N4004 specifications and is designed for general-purpose, low-power
applications.
ABSOLUTE MAXIMUM RATINGS
Peak Repetitive Voltage, VRRM . • • . . . . . . . . . . . . . . 400V
Peak Reverse Working Voltage, VRWM . . . . . • . . . . . 400V
DC Blocking Voltage, VR •••••••..•.•••••..•.• 400V
Non Repetitive Peak Reverse Voltage, VRM
(Half-Wave 60 Hz Peak) ................ 400V
Input Voltage (rms) ......................... 2S0V
Average Rectified Forward Current, 10 ........... 1.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -55°C to+150°C
TRL
0.043" x 0.043"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
VBR
IR
VF
CJ
Limits
Test Conditions Min. Typ. Max. Units
400 4S0 V
IR =10/LA
- 0.02 10 /LA
VR=400V
IF =1000mA
9S0 1100 mV
VR =10V,
6.2 9.0 pF
f=1 MHz
1.25
1.5
FORWARD VOLTAGE IN VOLTS
Ow:] No A-14,OSO
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
30
10000~--,----,----,----,---~
5
1000~
5
o
---:1
V =200V
R
.0
,'7
0
.......... , /
.--. .-..
~~::~~::+.:
E ...... ......
O~70
IT
A
0
-20
80
130
+25OC
I
1'--- t--
~ t-.....
......
.-c...
- ... - t - - - - t - - - + - - - - - - - j
30
.......
=
"
.0
0
0.1
180
1.0
r10
REVERSE VOLTAGE IN VOLTS
JUNCTION TEMPERIm)RE IN 'C
Dwg. No. A-14.081
Owg. No. A-14,082
4-155
20
PROCESSTRO
ProcessTRO
Medium-Speed Switching Diode
Process TRO produces a non-gold-doped silicon
epitaxial diode used primarily as a medium-speed
switching device. Designed to 1N485 specifications,
the diode has a breakdown-voltage rating of 200 V,
and a typical trr rating of 100ns.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............ 1000 mA
(Pulse Width = 1fLS) ............. 4.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Limits
Characteristic Test Conditions Min. Typ. Max.
VBR
200 210 IR= 1O fLA
VR=100V
0.2 10
IR
VF
IF= 100mA
- 880 1000
CJ
VR=Ov,
- 6.0 10
f=1 MHz
0.1 3.0
IF=IR=10mA trr
TRO
0.019" x 0.019"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
100o§
Units
V
nA
mV
pF
TAl +150"C
100
0
TA = +100"C_
1. 0
//
fLS
1
~ ' /
,/ I
/) //
§
1~
; ....
.. ?7
~
/,/
"/ /
/ /'
1///
0.25
I
0.5
l
I
/
I
' r f - T T 25 "C
TA~
-55 "C
1
0.75
1.0
1.25
FORWARD VOLlAGE IN VOLTS
1.5
1.75
Dwg. No. A-14,085
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
1000
7.0
/ . ,," .. -.........
~
...
..
....
.
..
.'..
~~ .
........ ''''
'
0
...... .
VR:=200~ '
...--:;
6.0
-::
....
I T = +25"C I
A
=--- .......... r-.
'
..............~VR=100V
0
.... VR =50V
............
........
r--
0
1.0
o. 1
-70
-20
30
so
JUNCTION TEMPERllrURE IN"C
D"" No
0
180
.130
A-I~
0.1
084
4-156
1.0
10
REVERSE VOLTAGE IN VOLTS
Dwg, No A-14,083
20
PROCESSTRR
Process TRR
Medium-Speed Switching Diode
Process TRR is a non-gold-doped silicon epitaxial
diode designed to 1N3595 specifications and used in
medium-speed switching applications.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............. 500 mA
(Pulse Width = 1jJ.s) ............. 2.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
TRR
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
VBR
IR
VF
CJ
t"
0.017" x 0.017"
Limits
Test Conditions Min. Typ. Max. Units
150 170 V
IR=10jJ.A
VR=125V
5.0 10 nA
IF=100mA
840 1000 mV
6.6 8.0 pF
VR=OV,
f= 1MHz
IF=I R=10mA 0.04 3.0 jJ.s
1.25
1.5
FORWARD VOLTAGE IN VOLTS
Dwg. No. A-14,088
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
1000
8.0
0
~
6. 0
~
-...... .........
ITA" +25"(;
I-
I
;,0 .. : ; : ; : : , . . ......
" .....
0
4. 0
~~~l"'00V
..........
..........
.; ............VA~70V
0
O. 1
-70
2. 0
~/
..........
-20
80
30
JUNCTION TEMPERATURE IN"C
130
0
180
0.1
""r--
"""""""10
1.0
REVERSE VOLTAGE IN VOLTS
o~
Dwg. No. A-14,087
4-157
No. A-14,086
20
PROCESSTRS
ProcessTRS
Medium-Speed Switching Diode
Designed for switching applications requiring low
leakage-current characteristics, this non-gold-doped
silicon epitaxial diode has a typical reverse recovery
time of 70ns and a typicall R of less than 1.0nA.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width=1s) ............ 1000mA
(Pulse Width = 1,....,s) ............. 4.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
TRS
ELECTRICAL CHARACTERISTICS at TA =+ 25°C
Limits
Characteristic Test Conditions Min. Typ. Max.
VBR
IR=10,....,A
50 75 VR=40V
- 0.2 10
IR
VF
IF=10mA
830 1000
CJ
5.0 7.0
VR=OV,
f= 1MHz
IF=I R =10mA 70 100
trr
0.015" x 0.015"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
Units
V
nA
mV
pF
ns
i
!
;;;
i13
~~
01
i=----+--I-1f--+-+-f--I-----+------1
0.D1 LaL.L-'--"-:-~L.J.J~LL-'--"-:-~L.LLf;cL.L~1';;;:.25L.LLl...-;'1.5
FORWARD VOLll\GE IN VOLTS
Dwg. No. A-14,091
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
1000
100
8.a
~
~
/,.
10
l~i;;~~
1
,-"
",,'" / /
VR -60V
VR =40V
O.
a
~
"
,
,,'
,- "
/."
/ , , ~"",//
"
~
1.0
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
0--
...............
/
---_ ..........' _._,L
30
80
JUNCTION TEMPERAfURE IN"C
r-.... ........
.0
-----
-20
C"TA"="+25ocl
130
r--
a
180
0.1
OWl No. A-14.090
1.0
REVERSE VOLTAGE IN VOLTS
10
Owg. No. A-14,089
4-158
20
PROCESS TSB
ProcessTSB
High-Speed Switching Diode
This gold-doped silicon epitaxial diode, designed
to meet 1N914 specifications, has a typical reverse
recovery time of 3.2ns and a typical junction capacitance of O.5pF.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............. 500 mA
(Pulse Width = 1fLS) ............. 2.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, T5 ..... -55°C to+150°C
TSB
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Limits
Characteristic Test Conditions Min. Typ. Max.
VBR
100 130 IR= 1O fL A
VR=20V
7.0 25
IR
VF
IF =10mA
780 1000
CJ
0.5 4.0
VR=OV,
f=1MHz
IF =I R=10mA 3.2 8.0
trr
0.015" x 0.015"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
1000
'E
Units
V
nA
mV
pF
~
...---::: -:::;;; ~
100
.... ~;' /"
v:/
o~
o~
ns
1
/
/
/
II
/
i: '/::/25'11
/ /
r
I~~
.1
1
0.00
// //
/
Il','
0.2
-55
0.4
0.6
f;
0.8
1.0
FORWARD VOLTAGE IN VOLTS
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
100
10
~
~
/.
o. 1
t'
VR~80V
0.01
d-'/
,'/
d,/'
.... ::;::::'
V R =5DV
0.5
..::
II /
0.48
VA=2DV
{f~/
.;.;
-15
..........
r-..
~
0.46
. ,~/
4'
~
o """""""-
.;
........ ....1/
-55
1.6
0.52
//
0.000 1
1.4
Dwg. No. A-14,093
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
~
1.0
0.001
12
.........
~
~
0.44
.;"'
25
65
105
JUNCTION TEMPERATURE IN 'C
145
0.4 20.1
185
1.0
REVERSE VOLTAGE IN VOLTS
OW]. No. A-14,094
4-159
10
20
Dwg. No. A-J4.092
I
I
PROCESS TSO
Process TSO
High-Speed Switching Diode
Process TSO produces a gold-doped silicon epitaxial diode with 1N3070 high-speed switching characteristics. It has a typical breakdown-voltage rating
of 250V and a typical junction capacitance of 2.2pF.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............ 1000 mA
(PulseWidth=1fLS) ............. 4.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
TSO
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
VBR
IR
VF
CJ
trr
0.019" x 0.019"
Limits
Test Conditions Min. Typ. Max. Units
200 250 V
IR= 1O fLA
VR=150V
15 100 nA
910 1000 mV
IF= 100mA
VR=OV,
- 2.2 5.0 pF
f=1 MHz
IF=I R=10mA 25 50 ns
1000
E
100
o.
T'~+17!'
E
10
1.
~::;
~
TA~+100'cA /
1~,ll
1
a
I
I
I
';?
/1
II
!,// /1 T,~
o~
0.0
/
~ 7'
+25'C
/ / lr55'C
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
FORWARD VOLTAGE IN VOLTS
Dwg. No. A-14,097
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
100
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
3.0
~
-'"
~
VR=d
~
1
=
1
1
~
/
?v
2.5
2.
!I'~l)'
/117'
1. 5
I
1.u
~
-::; .. ,,.::.",
--::::::: ··;:::fiC.vR~ 100 V
......
a
I T,~ +25'C I
--
r- r-
\
~ "'VR~5r
0.000 1
-70
-20
30
80
130
O. 5
0.1
180
JUNCTION lEMPERATURE!N °C
1.0
10
REVERSE VOLTAGE IN VOLTS
Dwg. No. A-I4.095
Dwg. No. A-14,096
4-160
20
PROCESS TSP
Process TSP
Ultra-High-Speed Switching Diode
Process TSP is a gold-doped silicon epitaxial diode designed as an ultra-fast switch. It meets the
specifications of the 1N4376 and FD700.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............. 500 mA
(PulseWidth=1f-Ls) ............. 2.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, T5 ..... - 55°C to + 150°C
TSP
t"
Limits
Test Conditions Min. Typ. Max.
30 40 IR= 1O f-LA
3.0 50
VR=20V
IF=10mA
830 880
0.7 1.0
VR=OV,
f= 1MHz
IF=I R=10mA 0.75 1.0
I
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
VSR
IR
VF
CJ
0.015" x 0.015"
Units
V
nA
mV
pF
ns
2.5
FORWARD VOLTAGE IN VOLTS
Dwg. No, A-14,IOO
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
10000
2
~
k:
/.
1000
10
VRd9
o~
,'/
,'/
08
'/
"'''//
10
4
1.0
o.
0
~'/
//
A
1:;/
,'/
r---
o. 6
-::;::/
:..vR-~10V
04
;;;",
o. 2
1§ ::,. . . .
0.0 1
-70
20
30
BO
130
0
0.1
180
JUNCTION TEMPERATURE IN "C
1.0
10
REVERSE VOLTAGE IN VOLTS
DWJ. No. A-14,099
Dwg. No. A-14,098
4-161
20
PROCESS TSS
Process TSS
High-Speed Switching Diode
Designed to meet the high-speed switching specifications of 1N3600, Process TSS is a gold-doped
silicon epitaxial diode.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............ 1000mA
(Pulse Width = 1ILS) ............. 4.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ...... -55°C to+150°C
TSS
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
VBR
IR
VF
CJ
trr
0.015" x 0.015"
Limits
Test Conditions Min. Typ. Max. Units
75 110 V
IR= 1O ILA
20 100 nA
VR=50V
IF=10mA
690 740 mV
VR=OV,
- 1.2 2.5 pF
f=1MHz
IF=I R=10mA 3.4 4.0 ns
1.5
DW!!. ND. A-14, 103
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
6
100
", ,
~
10
1.
o~
o.
",:/
0
/.-,,/
# .A
. "/
0.01
~'
"
0.0001-70
2
VR/ff'/
'~
0.00 1
1.4
~;/
....~",/'"
~
,/
"
//
5
~
'-VR -50V
o. B
/
//VR"'0V
o. 6
/'
/
-20
30
80
JUNCTION TEMPERATURE IN"C
130
o.4
180
0.1
1.0
10
REVERSE VOLTAGE IN VOLTS
DUl No. A·14,102
Dwg, No. A-14,10I
4-162
20
PROCESS TSU
ProcessTSU
High-Speed Switching Diode
Process TSU produces a gold-doped silicon epitaxial diode that meets or exceeds high-speed
switching characteristics of 1N4610. It has a typical
reverse recovery time of 4.0 ns and a typical junction
capacitance of 1.0 pF.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............ 1000 mA
(Pulse Width = 1fl,s) ............. 4.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Limits
Characteristic Test Conditions Min. Typ. Max.
VBR
IR=10fl,A
75 110 V
=50V
12 100
IR
R
VF
IF=10mA
700 750
CJ
VR=OV
- 1.0 2.5
f=1MHz
4.0 10
IF=IR=10mA trr
TSU
0.015" x 0.015"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
Units
V
nA
mV
pF
ns
FORWARD VOLTAGE IN VOLTS
DWi/. No. A-14,I06
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
100
4
§
0
1.
~
,'/
~~,~/
o~
~
0.0 1
0.00 1
/-
-::;"
",
-70
~
:;'''
2
-;"
VAd}
,,;,,~
o. 1
0.0001
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
"
A
/", "
;,,; , / /VR
0
//';"
8
XVR=50V
i 1OV
o. 6
"
-20
30
80
130
o. 4
180
0.1
1.0
10
REVERSE VOLlAGE IN VOLTS
JUNCTION TEMPERI\fURE IN"C
Dwg. No. A-14, 105
Dw;J. No. A1::1, 104
4-163
20
PROCESS TTU
Process TTU
High-Speed Switching Diode
A gold-doped silicon epitaxial diode used primarily
in high-speed switching applications, Process TTU,
with its P-type substrate, is the NP counterpart of PN
Type 1N914 and Process TSB diodes.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............. 500 mA
(Pulse Width = 1fLS) ............. 2.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
TTU
ELECTRICAL CHARACTERISTICS at TA
FORWARD CURRENT AS A FUNCTION
CF FORWARD VOLTAGE
=+ 25°C
Limits
Characteristic Test Conditions Min. Typ. Max. Units
VBR
75 110 V
IR= 1O fL A
VR=20V
12 50 nA
IR
VF
650 900 mV
IF= 10mA
CJ
9.0 10 pF
VR=OV
f=1MHz
IF=I R=10mA 3.5 B.O ns
trr
1000
E
150OC/ /
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
I,':
:;;
;;;
i
a
--,; ...
A1-
14"
01
!
0.01
0.001
R
--....-'
-15
/
/25'C
I
I
/55
v
/
1.0
1.2
Ov.g. No. A-I~ 107
r---
~
~/
. . . . #;/
~>
,"
0.0001
-55
I
l00'C /
-
~ If'"
./..
l,l
0.8
0.6
0.4
FORWARD VOLllIGE IN VOLts
0.2
~ .........
""50 V
,"
E
//
/
10
~/o/
VR~~ ~ .... VR~20V
E
!
"
V
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
AJ.
~- --V
~,
Vi/
~
o
// vI I"'j '/
,'~
~
0.0 1
E
--?-;:..
/'/" -.... -- /
E
o. 1 ~
100
0.015" x 0.015"
'-
'"
2.0
:-.........
-25
65
105
JUNCTION TEMPERIlfURE IN'C
0
0.1
145
01\90
No. A-14. lOB
4-164
1.0
REVERSE VOLllIGE IN VOLTS
10
Ov.g. No.
20
A-I~Ill9
PROCESS YAA
Process YAA
Power Diode
Process YAA is a silicon epitaxial P on N diode
designed for high-power applications. It can operate
with a forward current of up to 3A.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width =1 s) ............... 3.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... -55°C to+150°C
YAA
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
VBR
IR
VF
CJ
0.047" x 0.047"
Limits
Test Conditions Min. Typ. Max. Units
120 140 V
IR=1.0mA
VR= 80V
1.2 5.0 fJ-A
V
IF=1.0A
1.0 pF
24 VR=O\l,
f=1MHz
FORWARD VOLTAGE IN VOLTS
Dwg. No. A-14, til
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
10000
~
100
o~
10
o§
..
~
~'
o~
1. 0
E V,c80V
O. 1
0.0
0.00
1E
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
A
W'
\./
V'
~~jV
10 f__----1~t-t-+t__H++--~_+_-+_+_t_+t-++f__----1
-V<-50V
-VB -20V
1~ ....
0.000 1
-55
-15
25
65
105
145
185
JUNCTION TEMPERATURE IN °C
REVERSE VOLTAGE IN VOLTS
Dwg No. A-14,1I2
4-165
Dwg, No, -A-14.IIO
PROCESS YBA
Process YBA
Power Diode
Process YBA is a silicon epitaxial P on N diode
designed for high-power applications. It can sustain a
forward current of up to 5A.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............... 5.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
YBA
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
VSR
IR
VF
CJ
0.040" x 0.040"
Limits
Test Conditions Min. Typ. Max. Units
100 140 V
IR=1.0mA
VR=70V
0.6 1.0 fLA
1.4 V
IF=3.0A
pF
15 VR=OV,
f=1 MHz
o01 b--+-+--++--+-~+-~~+-~~-+-~~---j
2.0
FORWARD VOLTAGE IN VOLTS
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
100
20
o~
10
o~
o~
VR """"70V
o~
~
/
~
15
10
A
l#'
~{:~VR--50V
1~/?
,//
"--vT
II
I
~"
1
0.0
25
Dw:]. No. A-14,1I4
0
2OV
000 ,!!,'/
1~/
0.000
-55
-15
25
65
105
JUNCTION TEMPERATURE IN "C
0
145
01
185
10
REVERSE VOLTAGE IN VOLTS
Dwg, No. A-14,115
4-166
10
DWlJ No.
20
A~I4,
113
PROCESS VIA
Process VIA
Power Diode
Process VIA is a silicon epitaxial N on P diode
designed for high-power applications. It can operate
with a forward current of up to 5A.
ABSOLUTE MAXIMUM RATINGS
Peak IF Surge (Pulse Width = 1s) ............... 5.0A
Operating Junction Temperature, TJ . . . . . . . . . . + 150°C
Storage Temperature Range, Ts ..... - 55°C to + 150°C
VIA
ELECTRICAL CHARACTERISTICS at TA
0.047" x 0.047"
FORWARD CURRENT AS A FUNCTION
OF FORWARD VOLTAGE
=+ 25°C
limits
Test Conditions Min. Typ. Max. Units
100 110 V
IR=1.0mA
-- 0.2 1.0 fLA
VR= 70V
1.4 V
IF=3.0A
130 pF
VR=OV,
f=1 MHz
Characteristic
VSR
IR
VF
CJ
FORWARD VOLTAGE IN VOLTS
Dv.q No. A-14,116
REVERSE CURRENT AS A FUNCTION
OF JUNCTION TEMPERATURE
1000
100
10
JUNCTION CAPACITANCE
AS A FUNCTION OF REVERSE BIAS
150
"
"
~
~:;~
........
",-'
~
125
~'/
. "",/ ,;
100
:--r-..
",
1.0
o.
~
VA=?O~~
V,~ffJV
______
,;
5
V'~20V~ / /
1"
/
0.0 1~
.. ,"""
~:
" /
.... /
......
0
.......
, r-..
,
f........
" /
r---
.",./
0.001
5
'
?"',;,; /'
0.0001
-55
-15
25
65
105
145
0
0.1
185
1.0
10
REVERSE VOLTAGE IN VOLTS
JUNCTION TEMPERATURE IN °C
Dwg. No,
A~14.
117
Dwg. No, A-I4, 118
4-167
20
ZENER DIODES
Process ZAA and ZAB
Zener Diodes
• Alloy Junction
• Buried Zener Junction for High Reliability
• Silicon Epitaxial Layer Construction for Low Series Resistance
• Silicon Nitride Passivation
Process ZAA
Zener Voltage
2.7V-5.1 V
ZAA
0.025/1 X 0.025/1
Process ZAB
Zener Voltage
3.9V-5.1 V
ZAB
0.020/1 X 0.020/1
NOTE: Sprague Electric recommends against wire-bonding
in the coarse (center) region of the alloy junction.
4-168
ZENER DIODES
Process ZC, ZE and ZK
Zener Diodes
• Silicon Epitaxial Layer Construction for Low Series Resistance
• Buried Zener Junction for High Reliability
• Silicon Nitride Passivation
Process
Zener Voltage
ZCA
ZKA
ZEA
5.6V-12V
12V-25V
>25V
ZCA, ZEA, ZKA
Process
Zener Voltage
ZCB
ZKB
ZEB
5.6V-12V
12V-25V
>25V
Zener Voltage
ZCD
ZKD
ZED
5.6V-12V
12V-25V
>25V
I,'
"
ZCB, ZEB, ZKB
Process
0.025" x 0.025"
0.020" x 0.020"
SQ.
ZCD, ZED, ZKD
4-169
0.035" x 0.035"
ZENER DIODES
Process ZHO, ZHP, ZHQ, ZHR
. ,Temperature-Compensated
Zener Reference Diodes ·
• Anode and Cathode on Top
• Silicon Epitaxial Layer Construction for Low Series Resistance
• Buried Zener Junction for High Reliability
• Silicon Nitride Passivation
ZHO
ZHP
0.028" x 0.028"
Vz =6.2V at Iz =7.5mA
ZHQ
0.022" x 0.022"
Vz =6.4V at Iz =2.0mA
ZHR
0.022" x 0.022"
Vz =6.4Vat Iz =1.0mA
0.022" x 0.022"
Vz =6.4V at Iz =O.5mA
4-170
NOTES
TRANSISTOR & DIODE ARRAYS
SECTION 5-TRANSISTOR AND DIODE ARRAYS
Chips-in-DI Ps Custom Array Program ................................................. 5-2
TND Series Diode Arrays ........................................................... 5-3
TPP4000 Darlington Array .......................................................... 5-4
TPQ Series Quad Transistor Arrays .................................................... 5-5
ULN-2031A NPN 7-Darlington Array .................................................. 5-10
ULN-2032A PNP 7-Darlington Array .................................................. 5-10
ULN-2033A PNP 7-Darlington Array .................................................. 5-10
ULS-2045H Hermetic NPN Transistor Array ............................................ 5-12
ULN-2046A NPN Transistor Array ................................................... 5-12
ULN-2046A-1 NPN Transistor Array .................................................. 5-14
ULN-2047A Triple Differential Amplifier Array ........................................... 5-15
ULN-2054A Dual Differential Amplifier Array ........................................... 5-16
ULN-20B1A NPN Common-Emitter 7-Transistor Array .................................... 5-19
ULN-20B2A NPN Common-Collector 7-Transistor Array ................................... 5-19
ULN-20B3A Independent NPN 5-Transistor Array ........................................ 5-20
ULN-20B3A-1 Independent NPN 5-Transistor Array ...................................... 5-22
ULS-20B3H Hermetic Independent NPN Transistor Array .................................. 5-20
ULN-20B6A NPN 5-Transistor Array .................................................. 5-23
Additional information on transistor arrays
ULN-2031A through ULN-2086A, ULS-2045H
and ULS-2083H, is available from:
Sprague Electric Company
Integrated Circuits Division
115 Northeast Cutoff
Worcester, Massachusetts 01606
(617) 853-5000
5-1
TRANSISTOR AND DIODE ARRAYS
CHIPS-IN-DIPs
SPRAGUE ELECTRIC'S
CUSTOM-ARRAY PROGRAM
The Chips-In-Dips program uses discrete semi-
Assembly of discrete devices in dual in-line packages allows relatively higher power dissipation while
reducing handling and boosting component density.
·The standard molded Dip, the package most commonly used for automated circuit assembly, offers
superior mechanical protection of components during automatic insertion into printed wiring boards.
Series TPQ transistor arrays, Series TND diode
arrays, and Series TPP Darlington arrays are among
standard products offered by Sprague's Chips-InDips program. Semiconductor chips available for
custom-array products include those described in
the most recent issue of Sprague catalog CN -164.
conductor chips from Sprague Electric Company's comprehensive line of standard devices to
create transistor, diode, and Darlington arrays assembled to users' specifications at our Concord,
N.H., manufacturing facility.
The program gives Sprague extensive specialdesign capabilities for applications with design restrictions such as short lead time, small quantities,
and unique circuit requirements. Chips-In-Dips is an
attractive alternative to development of monolithic
integrated circuits and commitment to high-volume
purchases.
MAXIMUM RATINGS
Package Power Dissipation, Po ....................................... 2 W*
Operating Temperature Range, TA ........................... - 55°C to + 150°C
Storage Temeprature Range, Ts ............................ - 65°C to + 150°C
*Derate at the rate of 16 mW/oC above T,
=
+ 25°C
Dwg. No. A· 11 ,562A
Dwg. No.A-11,420A
5-2
SERIES TND DIODE ARRAYS
SERIES TND DIODE ARRAYS
TheinTND
series consists of diode arrays packaged
14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed
circuit board density.
In addition to the diode characteristics for standard products shown here, arrays consisting of
diodes with IN3070, IN3595, IN3600, IN4153, or
IN4447 characteristics can be furnished on request.
Other package configurations are available on specialorder.
Dwg. No. A-13,359
Dwg. No. A-13,360
TN0933
TN0940
TN0938
TN0939
ELEaRICAl CHARACTERISTICS at TA = + 25°C
VF
VBR
IR
Device
Type
Min.
Max.
@IF
(V)
(V)
(rnA)
TND903
TND905
TND907
TND908
TND918
TND921
75
100
120
100
75
75
1.0
1.0
1.0
1.0
1.0
1.0*
100
10
100
10
50
10
Max.
(nA)
VF
VBR
@VR
(V)
-
-
-
-
10
50
-
-
IR
Device
Type
Min.
Max.
@IF
(rnA)
Max.
(nA)
(V)
(V)
@VR
(V)
TND933
TND938
TND939
TND940
TND942
60
60
40
40
75
1.0
1.0
1.0
1.0
1.0
100
100
100
100
10
100
100
100
100
100
40
40
25
25
25
-
*AII diodes match to with ± 15 mV at IF = 10 rnA.
TN0903
TN0907
TN 0908
TN0918
TN0921
Dwg. No. A-13 t 361
Dwg. No. A-1 0,901
Dwg. No. A-10,903
TN 0905
5-3
TN0942
TPP4000 DARLINGTON ARRAY
TPP4000
MEDIUM-POWER DARLINGTON ARRAY
This Sprague medium-power array consists of
four Darlington pairs in a single 14-pin dual inline plastic package. Features include a collectorcurrent rating of 4 A, a minimum hpE of 2,000, and a
package power dissipation rating of2 W.
The standard molded dual in-line package is identical to the type used for many integrated circuits. It
offers superior mechanical protection for circuit elements during automatic insertion into printed wiring
boards.
Owg. No.A-10,7B2A
ABSOLUTE MAXIMUM RATINGS
Collector Current, Ie .............................................. 4.0 A
Power Dissipation, Po (total package) .................................. 2 W*
Operating Temperature Range, TA ........................... - 55°C to + 150°C
Storage Temperature Range, Ts ............................ - 6SoC to + IS0°C
'Derate at the rate of 16 mW/"C above T,
+ 25°C
=
ELECTRICAL CHARAOERISTICS at TA = + 25°C
Characteristic
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Cutoff
Current
Emitter-Cutoff
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current-Transfer
Ratio
limits
Max.
Typ.
Ie = 100 !LA
Min.
40
SO
-
Units
V
BVeBo
Ie = 100 ILA
SO
60
-
V
BVEBO
I,
= 100 ILA
12
14
-
V
leBO
VeB
= 30 V
-
10
100
nA
lEBO
V'B
= IOV
-
10
100
nA
Ve'lsau
IB
= 1.0 rnA, Ie = 1.0 A
-
1.0
I.S
V
VB'lsa!)
IB
= 1.0 rnA, Ie = 1.0 A
-
1.6
2.0
V
h"
Ve,
Ve,
Ve,
2000
2000
2000
-
-
-
-
-
-
-
-
Symbol
BVCES
Test Conditions
= S.O V, Ie = 500 rnA
= S.O V, Ie = 1.0 A
=
S.O V, Ie
5-4
=
2.0 A
-
SERIES TPQ QUAD TRANSISTOR ARRAYS
SERIES TPQ
QUAD TRANSISTOR ARRAYS
SERIES TPQ quad transistor arrays
SPRAGUE
are general-purpose silicon transistor arrays
consisting of four independent devices. Shown are
20 NPN types, 15 PNP types, and 12 NPN/PNP
complementary pairs.
All of these devices are furnished in a l4-pin dual
in-line plastic package. The molded package is identical to that used with most consumer integrated circuits and offers superior mechanical protection
during insertion into printed wiring boards.
Dwg. No. A-10-050A
TPQ2221
TPQ2221A
TPQ2222
TPQ2222A
TPQ2483
TPQ2484
TPQ3724
TPQ3725
TPQ3904
TPQ4001A
TPQ4002A
TPQ5550
TPQ5551
TPQ6426
TPQ6427
TPQ7041
TPQ7042
TPQ7043
TPQA05
TPQA06
Dwg. No. A-10,051A
TPQ2906
TPQ2906A
TPQ2907
TPQ2907A
TPQ3798
TPQ3799
TPQ3906
TPQ4354
TPQ5400
TPQ5401
TPQ7091
TPQ7092
TPQ7093
TPQA55
TPQA56
ABSOLUTE MAXIUMUM RATINGS
Power Dissipation, PD (Each Transistor) ............ 500 mW
(Total Package) .............. 2.0 W*
Operating Temperature Range, TA •••••••• - 55°C to + l50°C
Storage Temperature Range, Ts ......... - 65°C to + l50°C
*Derate at the rate of 16 mW;oC above TA
=
+ 25°C
Dwg. No.A-10,052A
TPQ6001
TPQ6002
TPQ6100
TPQ6100A
TPQ6501
TPQ6502
5-5
Dwg. No. A-1 Q,053A
TPQ6600
TPQ6600A
TPQ6700
TPQ7051
TPQ7052
TPQ7053
I
SERIES TPQ QUAD TRANSISTOR ARRAYS
ElECTRICAL CHARACTERISTICS at TA =
Part
Number
VCBR)CBO VCBR)CEO VCBR)EBO
(V)
(V)
(V)
Max.
(nA)
+ 25°C
ICBo
@VCB
(V)
DC Current Gain
Conditions
Saturation Voltage
VCE
VCE
Max.
VBE
Max.
(V)
(V)
(V)
h'E
Min.
Ic
(rnA)
35
40
20
35
40
20
75
100
30
75
100
30
100
150
150
200
300
300
35
25
Four MPM Devices
10
10
0.40 1.30
150
10
1.60 2.60
300
10
1.30
10
10
0.40
150
10
1.60 2.60
300
10
10
10
0.40 1.30
150
1.60 2.60
10
300
10
10
10
0.40
1.30
150
10
1.60 2.60
300
10
0.1
5.0
0.35 0.70
1.0
5.0
0.50 0.80
(See Note I)
5.0
10
5.0
0.35 0.70
0.1
1.0
5.0
0.50 0.80
(See Note I)
10
5.0
1.0
0.45
1.00
100
2.0
500
IT
(pF)
Similar
Discrete
Devices
20
8.0
2N2221
200
20
8.0
2N2221A
150
300
200
20
8.0
2N2222
150
300
200
20
8.0
2N2222A
1.0
10
50
0.5
6.0
2N2483
1.0
10
50
0.5
6.0
2N2484
500
250
50
10
2N3724
@Ic
(rnA)
Min.
(MHz)
@Ic
(rnA)
150
300
200
150
300
Cob
Max.
TPQ2221
60
40
5.0
50
50
TPQ2221A
75
40
6.0
50
50
TPQ2222
60
40
5.0
50
50
TPQ2222A
75
40
6.0
50
50
TPQ2483
60
40
6.0
20
45
TPQ2484
60
40
6.0
20
45
TPQ3724
60
(Note
2)
30
5.0
500
40
TPQ3725
60
(Note
2)
40
5.0
500
40
35
25
100
500
1.0
2.0
0.45
1.00
500
250
50
10
2N3725
TPQ3904
60
40
6.0
50
40
10
250
10
4.0
2N3904
40
6.0
500
30
-
6.0
500
30
200
50
10
-
TPQ5550
160
140
6.0
100
100
100
500
1000
100
500
1000
10
50
10
45
0.86
1.1
1.7
0.86
1.1
1.7
1.00
1.20
50
70
0.26
0.52
0.95
0.26
0.52
0.95
0.15
0.25
200
TPQ4002A
100
10
6.0
2N5550
TPQ5551
180
160
6.0
50
120
0.15
0.25
1.00
1.20
10
50
100
10
6.0
2N5551
TPQ6426
40
30
12
100
30
1.5
2.0
100
125
10
8.0
2N6426
TPQ6427
50
40
12
100
30
1.0
1.0
1.0
1.0
1.0
5.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
0.85
60
0.1
1.0
10
100
500
1000
100
500
1000
1.0
10
50
1.0
10
50
10
100
10
100
0.20
TPQ4001A
30
50
75
50
30
20
50
30
20
60
60
20
80
80
30
5k
10k
5k
10k
1.5
2.0
100
125
10
8.0
2N6427
NOTES:
1. Base-emitter voltage shown is V"(ON} at indicated Ie, V"
=
5.0 V.
2. BV"s
5-6
SERIES TPQ QUAD TRANSISTOR ARRAYS
ELECTRICAL CHARACTERISTICS atTA =
Part
Number
150
150
5.0
TPQ7042
200
200
5.0
TPQ7043
250
250
5.0
TPQA05
60
60
4.0
TPQA06
80
80
4.0
TPQ2906
-60
-40 -5.0
TPQ2906A
-.60
-40 -5.0
TPQ2907
-60 "-40 -5.0
TPQ2907A
-60
-60 -5.0
TPQ3798
-60
-40 -5.0
TPQ3799
-60
-60 -5.0
TPQ3906
-40
-40 -5.0
NOTES:
1. ICEs at VCE
2. ICEs at VCE
=
=
ICBo
@VCB
DC Current Gain
Conditions
Saturation Voltage
VCE
Max.
Ic
hFE
VCE
(V)
(V)
(V)
Min. (rnA)
Four NPN Devices (Continued)
100
120
25
1.0
10
0.5
40
10
10
40
30
10
100
150
25
1.0
10
0.5
40
10
10
40
30
10
25
1.0
0.5
100
180
10
40
10
10
40
30
10
10
1.0
0.25
100 (Note 1) 50
100
2.0
50
100 (Note 2) 50
10
1.0
0.25
50
100
2.0
Four PNP Devices
50 -30
35
10
-10 - 0.40
40
150 -10 -1.60
30 300 -10
-10 - 0.40
50 -30
35
10
40
150 -10 -1.60
30 300 -10
-10 -0.40
50 -30
75
10
100
150 -10 -1.60
50 300 -10
10
-10 -0.40
50 -30
75
150 -10 -1.60
100
50 300 -10
-50
10
100 0.01 -5.0 - 0.20
150
0.1 -5.0 -0.25
150
0.5 -5.0
-5.0
125
10
10 -50 225 0.01 -5.0 - 0.20
-5.0 -0.25
300
0.1
0.5 -5.0
300
-5.0
250
10
-1.0 -0.25
40
0.1
50 -30
60
1.0 -1.0
-1.0
10
75
VI.'ICBO VIB'ICEO VIB'IEBO Max.
(V)
(V)
(V)
(nA)
TPQ7041
+ 25°C
f!
VBE
Max.
(V)
@Ic
(rnA)
Min.
(MHz)
@Ic
(rnA)
0.9
20
50
10
5.0
-
0.9
20
50
10
5.0
-
0.9
20
50
10
5.0
-
COb
Max.
(pF)
Similar
Discrete
Devices
-
100
-
-
10
MPSA05
-
100
-
-
10
MPSA06
-1.30 150
- 2.60 300
200
50
8.0
2N2906
-1.30 150
- 2.60 300
200
50
8.0
2N2906A
-1.30 150
- 2.60 300
200
50
8.0
2N2907
-1.30 150
- 2.60 300
200
50
8.0
2N2907A
- 0.70
-0.80
0.1
1.0
60
1.0
4.0
2N3798
- 0.70
-0.80
0.1
1.0
60
1.0
4.0
2N3799
-0.85
10
200
10
4.5
2N3906
50 V, V" = O.
60 V, V"
=
O.
5-7
I
I,
SERIES TPQ QUAD TRANSISTOR ARRAYS
ELECTRICAL CHARAOERISTICS at TA = + 25°C
DC Current Gain
Conditions
r
ICBo
Part
V(BRICBO V(BRICEO V(BRIEBO Max. @V CB hFE
(V)
(V)
(V)
(V)
(nA)
Number
Min.
Ic
(rnA)
VCE
(V)
Saturation Voltage
VCE
Max.
(V)
VBE
Max.
(V)
fT
@Ic Min.
(rnA) (MHz)
@Ic
(rnA)
Cob
Max.
(pF)
Similar
Discrete
Devices
Four PNP Devices (Continued)
TPQ4354
-60 -60 -5.0
TPQ5400
-130 -120 -5.0
100 (Note 2)
TPQ5401
-160 -150 -5.0
100 (Note 3)
50
-50
TPQ7091
150
150
5.0
250
120
TPQ7092
200
200
5.0
250
160
TPQ7093
250
250
5.0
250
180
TPQA55
-60 -60 -4.0
100 (Note 4)
TPQA56
-80 -80 -4.0
100 (Note 5)
25
40
50
40
30
40
40
50
60
50
25
35
25
25
35
25
25
35
25
50
50
50
50
0.1
1.0
10
100
1.0
10
50
1.0
10
50
1.0
10
30
1.0
10
30
1.0
10
30
10
100
10
100
-10
-10
-10
-10
-5.0
-5.0
-5.0
-5.0
-5.0
-5.0
10
10
10
10
10
10
10
10
10
-1.0
-2.0
-1.0
-2.0
- 0.15 - 0.90 150
100
50
30
(Note
1)
2N4354
- 0.20 -1.00
- 0.50 -1.00
10
50
100
10
6.0
2N5400
-0.20
-0.50
1.00
1.00
10
50
100
10
6.0
2N5401
0.5
0.9
20
50
10
5.0
-
0.5
0.9
20
50
10
5.0
-
0.5
0.9
20
50
10
5.0
-
-0.25
-
100
-
-
15
MPSA55
-0.25
-
100
-
-
15
MPSA56
Two NPNITwo PNP Devices
TPQ6001
(Note 6)
60
30
5.0
30
50
TPQ6002
(Note 6)
60
30
5.0
30
50
TPQ6100
(Note 6)
60
40
5.0
10
50
TPQ6100A
(Note 6)
60
45. 5.0
10
50
25
35
40
20
50
75
100
30
50
75
75
60
100
150
150
125
1.0
10
150
300
1.0
10
150
300
0.1
0.5
1.0
10
0.1
0.5
1.0
10
10
10
10
10
10
10
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
NOTES:
I. C,.
2. I"s at V" = 100 V, V" = o.
3. IcES at V" = 120 V, V" = o.
4. IcES at V" = 50 V, V" = O.
5. IcES at V" = 60 V, V" = o.
6. NPN/PNP complementary pairs. Polarity shown is for NPN devices.
5-8
OAO
lAO
1.30 150
2.00 300
200
50
8.0
2N2221
and
2N2906
OAO
lAO
1.30 150
2.00 300
200
50
8.0
2N2222
and
2N2907
0.25
0.80
1.0
100
0.5
4.0
2N2483
and
2N3798
0.25
0.80
1.0
100
0.5
4.0
2N2484
and
2N3799
SERIES TPQ QUAD TRANSISTOR ARRAYS
ELECTRICAL CHARACTERISTICS at TA = + 25°C
DC Current Gain
ICBo
Part
Number V(BR)CBO V(BR)CEO V(BR)EBO Max. @VCB
(V)
(V)
(V)
(nA)
(See Note) (V)
Conditions
hfE
Min.
Ic
(rnA)
VCE
(V)
Saturation Voltage
VCE
Max.
(V)
VBE
Max.
(V)
IT
@Ic
(rnA)
Min.
(MHz)
@Ic
(rnA)
Cob
Max.
(pF)
Similar
Discrete
Devices
Two NPNlTwo PNP Devices (Continued)
TPQ6501
60
30
5.0
30
50
25
35
40
20
1.0
10
150
300
10
10
10
10
0.40
1.40
1.30
2.00
150
300.
200
50
8.0
2N2221
and
2N2906
TPQ6502
60
30
5.0
30
50
50
75
100
30
1.0
10
150
300
10
10
10
10
0.40
1.40
1.30
2.00
150
300
200
50
8.0
2N2222
and
2N2907
TPQ6600
60
40
5.0
10
50
50
75
75
60
0.1
0.5
1.0
10
5.0
5.0
5.0
5.0
0.25
0.80
1.0
100
0.5
4.0
2N2483
an~
2N37J8
.-
TPQ6600A
60
45
5.0
10
50
100
150
150
60
0.1
0.5
1.0
10
5.0
5.0
5.0
5.0
0.25
0.80
1.0
100
0.5
4.0
2N24l4
and
2N3799
TPQ6700
40
40
5.0
50
30
30
50
70
0.1
1.0
10
1.0
1.0
1.0
0.25
0.90
10
200
10
4.5
2N3904
and
2N3906
TPQ7051
150
150
5.0
250
120
25
35
25
1.0
10
30
0.7
0.9
20
50
10
6.0
-
TPQ7052
200
200
5.0
250
150
25
35
25
1.0
10
30
0.7
0.9
20
50
10
6.0
-
TPQ7053
250
200
5.0
250
180
25
35
25
1.0
10
30
10
10
10
10
10
10
10
10
10
0.7
0.9
20
50
10
6.0
-
NOTE:
NPN/PNP complementary pairs. Polarity shown is for NPN devices.
5-9
ULN-2031A, ULN-2032A, AND ULN-2033A
HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS
ULN-2031A, ULN-2032A, AND ULN-2033A
HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS
TYPE ULN-2031A, ULN-2032A, and
SPRAGUE
ULN-2033A High-Current Darlington Transistor Arrays are comprised of seven silicon Darlington
pairs on a common monolithic substrate. The Type
ULN-2031A consists of 14 NPN transistors connected to form seven Darlington pairs with NPN action. The Type ULN-2032A (h pE = 500 min.) and
the Type ULN-2033A (h pE = 50 min.) consist of
seven NPN and seven PNP transistors connected to
form seven Darlington pairs with PNP action. All
devices feature a common emitter configuration.
These devices are especially suited for interfacing
between MOS, TTL, or DTL outputs and 7-segment
LED or tungsten filament indicators. Peak inrush
currents to 100 rnA are allowable. They are also
ideal for a variety of other driver applications such
as relay control and thyristor firing.
The ULN c2031A, ULN-2032A, and ULN-2033A
transistor arrays are housed in 16-lead DIP plastic
packages which include a separate substrate connection for maximum circuit design flexibility.
Dwg. No. A-9202
ULN-20l1A
Dwg. No. A-9201
Additional information on transistor arrays
ULN-2031A through ULN-2086A, ULS-2045H
and ULS-2083H, is available from:
ULN-20l2A
ULN-20llA
Sprague Electric Company
Integrated Circuits Division
115 Northeast Cutoff
Worcester, Massachusetts 01606
(617) 853-5000
5-10
ULN-2031A, ULN-2032A, AND ULN-2033A
HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS
ABSOLUTE MAXIMUM RATINGS
at + 2S0 ( Free-Air Temperature
(unless otherwise noted)
Power Dissipation (anyone Darlington pair) ...................................................... 500 mW
(total package) ............................................................. 750 mW
Derating Factor Above + 25°C .......................................................... " 6.67 mWrC
Ambient Temperature Range (operating), TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts ...................................................... - 55°C to + 125°C
Individual Darlington Pair Ratings:
Collector-to-Emitter Voltage, VCED . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 16 V
Collector-to-Base Voltage, Vc'o. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 40 V
Collector-to-Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 40 V
Emitter-to-Base Voltage, VE,o
Type ULN-2031A ........................................................................ 5 V
Type ULN-2032A and ULN-2033A .................... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 40 V
Continuous Collector Current, Ic ............................................................. 80 mA
Continuous Base Current, I, ................................................................. 5 mA
NOTE:
The substrate must be connected to avoltage which is more negative than any collector or base voltage so as to maintain isolation between transistors, and to
provide normal transistor action.
mCTRICAl CHARAOERISTICS at TA
= + 25°C
Characteristic
Collector-Base Breakdown Voltage
Collector-Substrate Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Type ULN-2031A
Type ULN-2032A and ULN-2033A
Symbol
D-C Forward Current Transfer Ratio
Type ULN-2031A and ULN-2032A
Type ULN-2033A
hFE
Base-Emitter Saturation Voltage
Type ULN-2031A
Type ULN-2032A and ULN-2033A
V'EISAn
Collector-Emitter Saturation Voltage
Type ULN-2031A and ULN-2032A
VeE1S")
BVc,o
BV clo
BVeED
BV EBo
Ie
Ie
Ie
IE
= 500/LA
= 500/LA
= 1 mA
= 500/LA
VeE
Ie
Min.
40
40
16
-
Units
V
V
V
5
40
-
-
V
V
500
50
-
500
-
-
2
1
V
V
-
-
1.2
-
-
1.5
1.2
1.5
100
V
V
-
Max.
= 2V, Ic = 20 mA
-
= 20 mA, I, = 500,.u\
= 20 mA, I,
= 80 mA, I,
Ie = 20 mA, I,
Ie = 80 mA, I,
VCE = 8 V
Ve, = 10V
Ie
Ie
ICED
Ic,o
Limits
Typ.
-
-
Type ULN-2033A
Collector Cutoff Current
Test Conditions
5-11
= 40 /LA
= 1 mA
= 400 /LA
= 2 mA
-
-
-
-
-
-
-
10
V
V
/LA
/LA
ULS-2045H AND ULN-2046A TRANSISTOR ARRAYS
ULS-2045H AND ULN-2046A TRANSISTOR ARRAYS
(Three Isolated Transistors
and One Differential Amplifier
THE ULS-204SH and ULN-2046A are generalpurpose transistor arrays each consisting of five
silicon N-P-N transistors on a single monolithic
chip. Two transistors are internally connected to
form a differential pair. Integrated circuit construction provides close electrical and thermal matching
between each transistor.
These arrays are well-suited for a wide range of
applications such as: DC to VHF signal processing
systems; temperature-compensated amplifiers; custom designed differential amplifiers and discrete
transistors in conventional circuits.
Two package configurations are available. Type
ULS-204SH is supplied in a hermetic 14-lead dual inline ceramic package and is rated for operation over
the military temperature temperature of - SSOC to
Owg. No. A-9034
+ 12SoC. Type ULN-2046A is electrically identical
to the ULS-204SH but is supplied in a dual in-line
plastic package rated for - 20°C to + 8SoC ambients.
ABSOLUTE MAXIMUM RATINGS
at
+ 2S0( Free-Air Temperature
(unless otherwise noted)
ULS-2045H
EACH
TRANSISTOR
ULN-2046A
TOTAL
Power Dissipation:
PACKAGE
UNITS
TA to + 55°C ................................... .
300
mW
750
TA to + 75°C ................................... .
300
750
mW
Derating Factor:
6.67
mWrC
TA> + 55°C ................................... .
8
mWrC
TA> + 75°C ................................... .
Collector-Base Voltage, VeBo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 30 V
Collector-Emitter Voltage, VeEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Collector-Substrate Voltage, VelO (See note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Emitter-Base Voltage, VEBO ' • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 6 V
Collector Current, Ie ................................................................................... 50 mA
Operating Temperature Range, TA:
Type ULS-2045H ........................................................................... - 55°C to + 125°C
Type ULN-2046A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts .................................................................. - 65°C to + 150°C
Notes:
1. The maximum ratings are limiting absolute values above which the serviceability may be impaired from the viewpoint of life or satisfactory performance. The breakdown voltages
may be far above the maximum voltage ratings. To avoid permanent damage to the transistor, do not attempt to measure these characteristics above the maximum ratings.
2. Pin 13 is conencted to the substrate. This terminal must be tied to the most negative point in the external circuit to maintain isolation between transistors and to provide for
normal transistor action.
5-12
TOTAL
PACKAGE
EACH
TRANSISTOR
ULS-2045H AND 2046A TRANSISTOR ARRAYS
STATIC ELECTRICAL CHARACTERISTICS at TA
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Substrate Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Static Forward Current
Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Input Offset Current for
Matched Pair 0, and 01
Magnitude of Input Offset
Voltage for Differential Pair
Magnitude of Input Offset
Voltage for Isolated Transistors
Temperature Coefficient of
Base-Emitter Voltage
Temperature Coefficient
Magnitude of Input-Offset Voltage
= + 25°C
Symbol
Min.
Limits
Typ.
20
15
20
5
60
24
60
7
Max.
Units
V
V
V
V
nA
1101-1101
= 10 fLA, IE = 0
= 1 rnA, I, = 0
Ie = 10 fLA, lei = 0
IE = 10 fLA, Ie = 0
Ve, = 10 V, IE = 0
VeE = 10 V, I, = 0
Ie = 10 fLA, VeE = 3 V
Ie = 1 rnA, VeE = 3 V
Ie = 10 rnA, VeE = 3 V
Ie = 10 rnA, I, = 1 rnA
IE = 1 rnA, VeE = 3 V
IE = 10 rnA, VeE = 3 V
Ie = 1 rnA, VeE = 3 V
V'EI-VBE1
Ie
= 1 rnA, VCE = 3 V
0.45
5
mV
V'EJ-VBE4
VBE4 -VB£5
VBE5 -V,EJ
Ie
Ie
Ie
Ie
= 1 rnA, VeE
= 1 rnA, VeE
= 1 rnA, VeE
= 1 rnA, VeE
0.45
0.45
0.45
-1.9
5
5
5
mV
mV
mV
mV;oC
Ie
= 1 rnA, VeE = 3 V
BVe,o
BV eEO
BVeio
BV,o
le,o
leEO
hfE
VeEISAI)
VBE
flV"
flT
flV IO
flT
DYNAMIC ELECTRICAL CHARACTERISTICS at TA
Characteristic
Small-Signal Common-Emitter
Forward Current Transfer Ratio
Small-Signal Common-Emitter
Short-Circuit Input Impedance
Small-Signal Common-Emitter
Open-Circuit Output Impedance
Small-Signal Common-Emitter
Open-Circuit Reverse
Voltage-Transfer Ratio
Gain-Bandwidth Product
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
Noise Figure
Test Conditions
Ie
Ie
40
0.5
40
= 3V
= 3V
= 3V
= 3V
fLA
54
100
100
0.23
0.715
0.800
0.3
2
fLA
-
V
V
V
1.1
fLV;oC
= + 25°C
Symbol
Test Conditions
Min.
Limits
Typ.
Max.
Units
hIe
Ie
= 1 rnA, VeE = 3 V, f = 1 kHz
110
-
hie
Ie
= 1 rnA, VeE = 3 V, f = 1 kHz
3.5
kn
hoe
Ie
= 1 rnA, VeE = 3 V, f = 1 kHz
15.6
fLmho
h"
Ie
= 1 rnA, VeE = 3 V, f = 1 kHz
1.8 x 10- 4
fT
CEB
Ce,
Ie = 3 rnA, VeE = 3 V
VES = 3 V, IE = 0, f = 1 MHz
Ve, = 3 V, Ie = 0, f = 1 MHz
Cel
NJ.
Ves
= 3 V, Ie = 0, f = 1 MHz
= lkn
Ie = 100 fLA, VeE = 3 V, R,
f = 1 kHz, BW = 15.7 kHz
NOTE: Characteristics apply for each transistor unless otherwise specified.
5-13
300
550
0.6
0.6
2.8
3.25
-
MHz
pF
pF
pF
dB
ULN-2046A-1 TRANSISTOR ARRAY
ULN-2046A-l
TRANSISTOR ARRAY·
TYPE ULN-2046A-l general-purpose transistor
array consists of five silicon NPN transistors,
two of which are connected as a differential
amplifier. The monolithic construction provides
close electrical and thermal matching between all
transistors.
Except as shown in the following electrical characteristics, Type ULN-2046A-l transistor array is
identical to Type ULN-2046A.
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Substrate Breakdown Voltage
Collector Cutoff Current
Static Forward Current
Transfer Ratio
NOTE:
Symbol
BVcBo
BVcEO
VB clo
ICBO
IcEO
hf[
Test Conditions
Ic = 10 J.LA, IE = 0
Ic = 1 rnA, IB = 0
Ic = 10 J.LA, ICI = 0
VCB = 10 V, IE = 0
VCE = 10 V, IB = 0
Ic = 1 rnA, VCE = 3 V
Limits
Max.
Min.
40
30
40
Typ.
60
-
-
100
5.0
30
100
-
-
-
60
-
Units
V
V
V
nA
J.LA
Pin 13 is connected to the substrate. This terminal must be tied to the most negative point in the external circuit to maintain isolation between transistors and to
provide for normal transistor action.
Additional information on transistor arrays
ULN-2031A through ULN-2086A, ULS-2045H
and ULS-2083H, is available from:
Sprague Electric Company
Integrated Circuits Division
115 Northeast Cutoff
Worcester, Massachusetts 01606
(617) 853-5000
5-14
ULN-2047A TRANSISTOR ARRAY
ULN-2047A TRANSISTOR ARRAY
(Three Differential Amplifiers)
TYPE ULN-2047 A is a silicon NPN multiple transistor array comprising three independent differential amplifiers. It is specifically intended for use
in switching applications such as electronic organ
keyboards. All base leads are brought out on one
side of the 16-lead plastic dual in-line package to
simplify printed wiring board layout. A separate
substrate connection permits maximum circuit design flexibility.
Type ULN-2047A is supplied in a 16-pin dual inline plastic package.
Dwg. No. A-10,231
ABSOLUTE MAXIMUM RATINGS
at + 25°C Free-Air Temperature
Power Dissipation, Po (anyone transistor) ............................. 300 mW
(total package) ............................... 750 mW*
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts ............................ - 55°C to + 150°C
ELECTRICAL CHARACTERISTICS at 25°C Free-Air Temperature
Collector-Emitter Breakdown Voltage, BVcEO (note 1)
at Ic = 5 rnA ................................................... 30 VMin.
Emitter Cutoff Current, lEBO (note 2)
at VEB = 5 V ................................................. 100 nA Max.
Collector Cutoff Current, ICES (note 1)
at VCE = 25 V ................................................ 100 nA Max.
D-C Forward Current Transfer Ratio, hfE (note 1)
at VCE = 2 V, Ic = O.l rnA .......................................... 30 Min.
at VCE = 2 V, Ic = 10 rnA ........................................... 75 Min.
Differential Input Offset Voltage, VIO (note 1)
at VCE = 2 V, ICl = Ic, = 1 rnA ..................................... 5 mV Max.
NOTES:
1. All other pins common to emitter of transistor under test.
2. Base and collector of associated transistor connected to emitter, all other pins common to base of transistor
under test.
Additional information on transistor arrays
ULN-2031A through ULN-2086A, ULS-2045H
and ULS-2083H, is available from:
Sprague Electric Company
Integrated Circuits Division
115 Northeast Cutoff
Worcester, Massachusetts 01606
(617) 853-5000
5-15
ULN-20S4A TRANSISTOR ARRAY
ULN-20S4A TRANSISTOR ARRAY
(Dual Independent Differential Amplifiers)
ULN-2054A is a transistor array consisting
T HEof six
silicon NPN transistors on a single
monolithic chip. The transistors are internally interconnected to form two independent differential
amplifiers.
The ULN-2054A is intended for a wide range of
applications requiring extremely close electrical and
thermal matching characteristics. Some applications are: cascade limiter circuits; balanced mixer
circuits; balanced quadrature/synchronous detector
circuits; balanced (push-pull) cascade/senselIF amplifier circuits; or in almost any multifunction system requiring RF/Mixer/Oscillator, converter/IF
functions.
Available in a 14-lead dual in-line plastic package
the ULN-2054A is rated for operation over a - 20°C
to + 85°C ambient temperature range.
Other features are:
• Input Offset Voltage-5 mV max.
• Input Offset Current-2 fl-A max.
• Voltage gain (single-stage double-ended output)
- 32 dB typo
• Common-Mode Rejection Ratio (each amplifier)
-100 dB typo
ABSOLUTE MAXIMUM RATINGS
at
+ 2S0 ( Free-Air Temperature
(unless otherwise noted)
Power Dissipation TA to + 55°C:
Each Transistor ................................................................................... 300 mW
Total Package .................................................................................... 750 mW
Derating Factor, Total Package, TA ~ 55°C ............................................................... 6.67 mWrC
Collector-Base Voltage, VIBR)CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Collector-Substrate Voltage, VIBR)CIO (See note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Collector-Emitter Voltage, VIBR)CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 15 V
Emitter-Base Voltage, VIB')EBO .... /........................................................................... 5 V
Collector Current, Ic ................................................................................... 50 mA
Base Current IB ....................................................................................... 5 mA
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts .................................................................. - 65°C to + 150°C
Notes:
I. The maximum ratings are limiting absolute values above which the serviceability may be impaired from the viewpoint of life or satisfactOlY performance. The breakdown voltages
may be far above the maximum voltage ratings. To avoid permanent damage to the transistor, do not attempt to measure these characteristics above the maximum ratings.
2. Pin 5 is connected to the substrate. This terminal must be tied to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal
transistor action.
5-16
ULN-2054A TRANSISTOR ARRAY
STATIC ELECTRICAL CHARACTERISTICS at TA
= + 2SoC
Characteristic
Collector-Base Breakdown Voltage
Collector-Substrate Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base-Emitter Voltage
Symbol
V,BRleBO
V,BRlelo
V,BRICEO
VIBRIEBO
leBo
VBE
Temperature Coefficient of
Base-Emitter Voltage
I::.V BE
I::.T
VIO
Input Offset Voltage
Input Offset Current
Input Bias Current
Quiescent Operating Current Ratio
Temperature Coefficient
Magnitude of Input-Offset Voltage
010
II
lelOll
lel021
lel051
lel061
I::.V IO
1"031
1"031
1"031
l"a31
=
=
=
=
Min.
20
20
15
5
Limits
Typ.
60
60
24
7
0.630
0.715
0.750
0.800
-1.9
0.45
0.3
10
0.98-1.02
1"041 = 2 mA, VeB = 3 V
1"041 = 2 mA, VeB = 3 V
1"041 = 2 mA, VeB = 3 V
2 mA, VeB = 3 V
Max.
100
0.700
0.800
0.850
0.900
5
2
24
-
1.1
1"a31 = l"a41 = 2 mA, VeB = 3 V
mV
f,LA
f,LA
-
0.98-1.02
1"041 = 2 mA, VeB = 3V
Units
V
V
V
V
nA
V
V
V
V
mVrC
f,LVrC
I::.T
DYNAMIC ELECTRICAL CHARACTERISTICS at TA
Characteristic
Common-Mode Rejection Ratio
For Each Amplifier
AGC Range, One Stage
Test Conditions
Ie = 10 f,LA, I, = 0
Ie = 10 f,LA, ICl = 0
Ie = 1 mA, IB = 0
I, = 10 f,LA, Ie = 0
VeB = 10 V, I, = 0
Ie = 50 f,LA, VeB = 3 V
Ie = 1 mA, VeB = 3 V
Ie = 3 mA, VeB = 3 V
Ie = 10 mA, VeB = 3 V
Ie = 1 mA, VeB = 3 V
Symbol
CMR
= + 2SoC
hi,
hj,
Ie = 1 mA, VCE = 3 V, f = 1 kHz
3.5
In
hoe
Ie = 1 mA, VCE = 3 V, f = 1 kHz
15.6
f,Lmho
hre
Ie = 1 mA, VCE = 3 V, f = 1 kHz
1.8 x 10 4
fT
Ie = 3 mA, VCE = 3 V
AGC
Voltage Gain, Single Stage
Double Ended Output
AGC Range, Two Stage
A-
Voltage Gain, Two Stage
Double-Ended Output
Small-Signal Common-Emitter
Forward Current Transfer Ratio
Small-Signal Common-Emitter
Short-Circuit Input Impedance
Small-Signal Common-Emitter
Open-Circuit Output Impedance
Small-Signal Common-Emitter
Open-Circuit Reverse
Voltage-Transfer Ratio
Gain-Bandwidth Product
(for Single Transistor)
Noise Figure (for Single Transistor)
A-
AGC
NJ.
Ve, = 3 V, f = 1 kHz, Ie = 100 f,LA,
Rg = 1 kn, BW = 15.7 kHz
Noise Figure (for each Amplifier)
NJ.
f=100MHz
..
NOTE: Characteristics apply for each transistor unless otherwise speCified .
5-17
Min.
Limits
Typ.
100
Test Conditions
Vee = 12 V, VEE = - 6 V, Vx = 3.3 V,
f = 1 kHz (See figure 1)
Vee = 12 V, VEE = - 6 V, Vx = 3.3 V,
f = 1 kHz (See figu re 2)
Vec = 12 V, VEE = - 6 V, Vx = 3.3 V,
f = 1 kHz (See figu re 2)
Vee = 12 V, VEE = - 6 V, Vx = 3.3 V,
f = 1 kHz (See figure 3)
Vec = 12 V, VEE = - 6 V, Vx = 3.3 V,
f = 1 kHz (See figure 3)
Ie = 1 mA, VCE = 3 V, f = 1 kHz
Max.
Units
dB
75
dB
32
dB
105
dB
60
dB
110
-
-
550
MHz
3.25
dB
8
dB
ULN-20S4A TRANSISTOR ARRAY
Vee
AMPLIFIER TEST CIRCUITS
Owg. No. A-9036
COMMON MODE REJECTION RATIO
Figure 1
Vee
I--_ _ !VOUT
I.
"
Dwg. No. A-9037
Owg, No. A-9038
SINGLE-STAGE VOLTAGE GAIN
Figure 2
TWO-STAGE VOLTAGE GAIN
Figure 3
Additional information on transistor arrays
ULN-2031A through ULN-2086A, ULS-2045H
and ULS-2083H, is available from:
Sprague Electric Company
Integrated Circuits Division
115 Northeast Cutoff
Worcester, Massachusetts 01606
(617) 853-5000
5-18
ULN-2081A AND ULN-2082A
GENERAL-PURPOSE HIGH-CURRENT TRANSISTOR ARRAYS
ULN-20S1A AND ULN-20S2A
GENERAL-PURPOS.E HIGH-CURRENT TRANSISTOR ARRAYS
TYPE ULN-208IA and ULN-2082A
SPRAGUE
Transistor Arrays are comprised of seven highcurrent silicon NPN transistors on a common
monolithic substrate. The Type ULN-208IA is connected in a common-emitter configuration and the
Type ULN -2082A is connected in a common-collector configuration.
Both arrays are capable of directly driving seven
segment displays and LED displays. They are ideal
for a variety of other driver applications such as
relay control and thyristor firing.
Type ULN-208IA and ULN-2082A are housed in
16-lead Dip plastic packages which include a separate substrate connection for maximum circuit design flexibility.
Dwg. No. A-9042B
Dwg. No. A-9043B
ULN-20S2A
ULN-20S1A
ABSOLUTE MAXIMUM RATINGS
Power Dissipation (anyone transistor) ........................................................... 500 mW
(total package) .............................................................. 750 mW
Ambient Temperature Range (operating) .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Individual Transistor Ratings:
Collector-to-Emitter Voltage, VCEO .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 16 V
Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Collector-to-Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Emitter-to-Base Voltage, V'BO ................................................................. , 5 V
Collector Current, Ic ..................................................................... , 200 rnA
Base Current, IB ......................................................................... 20 rnA
NOTE:
The collector of each transistor in the Type ULN-2081A and ULN-2082A is isolated from the substrate by an integral diode. The substrate must be connected to a
voltage which is more negative than any collector voltage so as to maintain isolation between transistors. and to provide normal transistor action. Undesired coupling
between transistors is avoided by maintaining the substrate terminal (5) at either d-c or signal (a-c) ground. An appropriate bypass capacitor can be used to establish
a signal ground.
mORICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Substrate Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Forward Current Transfer Ratio
Symbol
BVCES
BVCIE
BV cEO
BVEBo
h"
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VB'ISATI
VC'ISAT}
Collector Cutoff Current
IcEO
ICBo
Test Conditions
Ic = 500/.LA
ICI = 500/.LA
Ic = I rnA
IE = 500/.LA
VCE = 0.5 V, Ic = 30 rnA
VCE = 0.8 V, Ic = 50 rnA
Ic = 30 mA
Ic = 30 rnA
Ic = 50 rnA
VCE = 10V
VcB=lOV
5-19
Min.
20
20
16
5
30
40
Limits
Typ.
80
80
40
7
80
0.75
0.13
0.2
Max.
Units
V
V
V
V
1
0.5
0.7
10
1
V
V
V
/.LA
/.LA
ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS
ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS
(Five Independent NPN Transistors)
for use in general purpose, medium
D ESIGNED
current (to 100 rnA) switching and differential
amplifier applications, the ULN-2083A and ULS2083H transistor arrays each consist of five NPN
transistors on a single monolithic chip. Two transistors are matched at low currents (1 rnA) making
them ideal for use in balanced mixer circuits, pushpull amplifiers, and other circuit functions requiring
close thermal and offset matching.
A separate substrate connection permits maximum circuit design flexibility. In order to maintain
isolation between transistors and provide normal
transistor action, the substrate must be connected to
a voltage which is more negative than any collector
voltage. The substrate terminal (pin 5) should therefore be maintained at either d-c ground or suitably
bypassed to a-c ground to avoid undesired coupling
between transistors.
Two package configurations are available. The
Type ULN-2083A is supplied in a 16-lead dual inline plastic package for operation over the temperature range of - 20°C to + 85°C. This package is sim-
Dwg. No. A-10,232
ilar to JEDEC style MO-001AC. The Type ULS2083H is electrically identical to the ULN-2083A but
is supplied in a hermetic dual in-line package for
operation over the temperature range of - 55°C to
+ 12YC. This package conforms to the dimensional
requirements of Military Specification MIL-M38510 and can meet all of the applicable environmental requirements of Military Standard MIL-STD883.
ABSOLUTE MAXIMUM RATINGS
at + 25°C Free-Air Temperature
Power Dissipation, PD (anyone transistor) ................................................................... 500 mW
(total package) ..................................................................... 750 mW*
Operating Temperature Range, TA (ULN-2083A) ....................................................... - 20°C to + 85°C
(ULS-2083H) ....................................................... - WC to + 125°C
Storage Temperature Range, Ts .................................................................. - 55°C to + 150°C
-Derate at the rate of 6.67 mWfOC above 25°C.
ELEORICAL CHARACTERISTICS at TA =
+ 25°C Free-Air Temperature
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Substrate Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BVeBo
BVeEO
BV eio
BVESo
leEO
leBO
VBE
VeElsAn
hFE
Test Conditions
Ie = 100 fLA
Ie = I rnA
Ie = 100 fLA
IE = 500 fLA
VeE = 10 V
VeB = 10 V
Base Emitter Voltage
VeE = 3 V, Ie = 10 rnA
Collector-Emitter Saturation Voltage
Ie = 50 rnA, IB = 5 rnA
D-C Forward Current Transfer Ratio
VeE = 3 V, Ie = 10 mA
VeE = 3 V, Ie = 50 mA
Differential Input Offset Voltage*
VeE = 3 V, Ie = 1 rnA
V,O
Differential Input Offset Current
1'0
VeE = 3 V, Ie = 1 rnA
-Applies only to transistors 01 and 0, when connected as adifferential pair.
5-20
Min.
20
15
20
5.0
-
-
650
40
40
-
Limits
Typ.
60
24
60
6.9
740
400
76
75
1.2
0.7
Max.
-
-
10
1.0
850
700
Units
V
V
V
V
fLA
fLA
mV
mV
-
5.0
2.5
mV
fLA
ULN-2083A AND ULS-2083H TRANSISTOR ARRAYS
D-C FORWARD CURRENT TRANSFER RATIO
AS A FUNCTION OF COLLECTOR CURRENT
I!!
g
.....--....
~
V
•
/
~
5
V
V
./
;I: 07
V
~O,
H--lJ
.......
~ O.5
0.\
~O
~
i-'"
V
•
V
~Q3
'"~Q2
i!l, a
g
1.0
3.0
10
CXlU.ECTOR CIJIIAENT, Ie, IN ....
0.3
30
.I
ea
~
100
2.0
1.0
-
~
-:
5.0
COLLEC~
10
CURRENT,
Dwg. No. A-10,236
BASE-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT
V
...V
10-
j..--
, ...............
~.O
10
20
COLLECTOR CURRENT, Ie IN mA
50
1-""1-"
I'
Q3
~
II
1.0
3.0
\0
COLLECTOR CURRENT, Ie IN IftA
30
DIFFERENTIAL INPUT OFFSET CURRENT
AS A FUNCTION OF COLLECTOR CURRENT
I
TA ·2sec
Q, - 0, ONLY
K«03V l
T~~
~
...............
VV
V
r
0.2
1.0
2.0
COLLECTOR CURRENT, Ie IN mA
Q.5
....-
-
.,;'
'/
\
0.1
\00
Dwg, No. A-10,234
llcE0 3V
a
I
11
~
0\
100
V
V
I
h:1~
I-"
V
DIFFERENTIAL INPUT OFFSET VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT
i5
100
. . . . hr.215
Dwg. No. A-10,237
I
50
Dwg. No. A-10,234
. / I-""
...............
H
I
20
IN rnA
tc
~~
8
20
fi
1
VII
7
T.
as
~
.- j...-'
~V
BASE-EMITTER VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT
T.~C
9
! 70;C'
T.
~
~
"It. 00"1:
,;'
0/
~
~
TA • 25"'C
i-"
1J
i
.10W
VV
COLLECTOR-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT
V
/'
5.0
\
0'0.1
\0
Dwg. No. A-10,238
02
0.5
1.0
2.0
COLLECTOR CLIRRENT, Ie IN rnA
5.0
Dwg. No. A-10,240
5-21
\0
ULN-2083A-1 TRANSISTOR ARRAY
ULN-2083A-l TRANSISTOR ARRAY
This device is a general-purpose transistor array
for use in medium-current switching and differential
amplifier applications. With the exception of the increased breakdown voltages shown below, Type
ULN-2083A-l is identical to Type ULN-2083A transistor array.
Dwg. No. A-1 0,232
ELEaRICAL CHARAaERISTlCS at TA
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
= + 25°C Free-Air Temperature
Symbol
BVcBo
BVcEO
Test Conditions
Ic
Ic
= 100 f.LA
= 1 rnA
Additional information on transistor arrays
ULN-2031A through ULN-2086A, ULS-2045H
and ULS-2083H, is availablt: from:
Sprague Electric Company
Integrated Circuits Division
115 Northeast Cutoff
Worcester, Massachusetts 01606
(617) 853-5000
5-22
Min.
40
30
Limits
Typ.
60
-
Max.
-
Units
V
V
ULN-2086A TRANSISTOR ARRAY
ULN-2086A TRANSISTOR ARRAY
Type ULN-2086A general-purpose transistor
array consists offive silicon NPN transistors, two of
which are connected as a differential amplifier. The
monolithic construction provides close electrical
and thermal matching between all transistors.
With the exception of the collector cutoff current
specifications listed below and the omission of guaranteed limits on input offset voltage and input offset
current, Type ULN-2086A is identical to Type
ULN-2046A transistor array.
Dwg. No. A-9834
ELECTRICAL CHARACTERISTICS at TA = + 25°C
Characteristic
Collector Cutoff Current
Symbol
IcBo
IcEO
NOTE: The substrate terminal must be tied to the most negative POint
transistor action.
Test Conditions
VCB
VCE
In
= 10 V, IE = a
= 10 V, IB = a
Min.
Limits
Typ.
-
-
-
-
Max.
100
5.0
Units
nA
/-LA
the external CIrCUit to maintain IsolatIOn between transistors and to provide for normal
Additional information on transistor arrays
ULN-203IA through ULN-2086A, ULS-2045H
and ULS-2083H, is available from:
Sprague Electric Company
Integrated Circuits Division
115 Northeast Cutoff
Worcester, Massachusetts 01606
(617) 853-5000
5-23
MOS CAPACITORS
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
SECTION 6-MOS CAPACITORS
Type 15K Part Numbering System .................................................... 6-2
Type 15K-A Single-Section MaS Capacitors ............................................. 6-3
Type 15K-B Single-Section MaS Capacitors ............................................. 6-4
Type 15K-C Single-Section MaS Capacitors ............................................. 6-4
Type 16K Multi-Section MaS Capacitors ............................................... 6-5
6-1
MOS CAPACITORS
TYPE 15K PART NUMBERING SYSTEM
15K
2020
H
OR5
D
100
B
A
' - - - - CHIP CODE. SEE
NOTES BELOW TABLES.
L...--_
BACKSIDE METALIZATION.
B = GOLD.
D-C VOLTAGE RATING IN VOLTS.
" - - - - CAPACITANCE TOLERANCE.
D = ±0.5 pF.
J = ±5%
K = ±10%
M = ±20%
L----CAPACITANCE IN pF. FIRST TWO CHARACTERS ARE SIGNIFICANT DIGITS. THE THIRD IS THE
NUMBER OF ZEROS THAT FOLLOW. FOR RATINGS BELOW 10 pF, THE LEDER 'R' APPEARS AS
A DECIMAL POINT.
' - - - - - TEMPERATURE COEFFICIENT OF CAPACITANCE.
H = ± 35 ppmrc. (± 15 ppmrC).
L...-_ _ _ _ _
CHIP SIZE IN THOUSANDTHS OF AN INCH.
1-------- SPRAGUE DEVICE TYPE.
6-2
MOS CAPACITORS
TYPE 15K
SINGLE·SECTION MOS CAPACITORS
'A'
Capacitance
(pF)
0.5
1.0
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
6.8
6.8
8.2
10
10
12
15
18
22
22
27
33
33
39
39
47
47
56
56
68
68
68
82
82
82
100
100
120
120
130
150
180
200
270
270
Chip Size
(mils)
20 x 20
20 x 20
20 x 20
20
20
20
20
20
20
20
20
20
30
20
20
30
30
30
30
30
40
30
30
40
30
40
40
40
40
50
40
50
60
40
50
60
50
60
50
60
60
60
60
60
60
60
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
20
20
20
20
20
20
20
20
20
30
20
20
30
30
30
30
30
40
30
30
40
30
40
40
40
40
50
40
50
60
40
50
60
50
60
50
60
60
60
60
60
60
60
Chip Size
(mm)
0.51 x 0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.76
0.51
0.51
0.76
0.76
0.76
0.76
0.76
1.02
0.76
0.76
1.02
0.76
1.02
1.02
1.27
1.02
1.27
1.02
1.27
1.52
1.02
1.27
1.52
1.27
1.52
1.27
1.52
1.52
1.52
1.52
1.52
1.52
1.52
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.76
0.51
0.51
0.76
0.76
0.76
0.76
0.76
1.02
0.76
0.76
1.02
0.76
1.02
1.02
1.27
1.02
1.27
1.02
1.27
1.52
1.02
1.27
1.52
1.27
1.52
1.27
1.52
1.52
1.52
1.52
1.52
x 1.52
x 1.52
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
WVDC
(V)
Part Number
Chip
Code*
100
100
100
100
100
100
100
100
100
100
100
100
100
100
75
100
100
100
100
100
100
100
75
100
65
100
100
100
100
100
75
100
100
65
100
100
75
100
65
100
100
100
100
85
75
65
15K2020HOR5D100BA
15K2020H1ROD100BA
15K2020H1R2D100BA
15K2020H1R5D100BA
15K2020H1R8D100BA
15K2020H2R2D100BA
15K2020H2R7D100BA
15K2020H3R3D100BA
15K2020H3R9D100BA
15K2020H4R7D100BA
15K2020H5R6D100BA
15K2020H6R8D100BA
15K3030H6R8D100BA
15K2020H8R2D100BA
15K2020H100K075BA
15K3030H100K100BA
15K3030H120K100BA
15K3030H150K100BA
15K3030H180K100BA
15K3030H220K100BA
15K4040H220K100BA
15K3030H270K100BA
15K3030H330K075BA
15K4040H330K100BA
15K3030H390K065BA
15K4040H390K100BA
15K4040H470K100BA
15K5050H470K100BA
15K5050H560K100BA
15K5050H560K100BA
15K4040H680K075BA
15K5050H680K100BA
15K6060H680K100BA
15K4040H820K065BA
15K5050H820K100BA
15K6060H820K100BA
15K5050H101K075BA
15K6060H101K100BA
15K5050H121K065BA
15K6060H121K100BA
15K6060H131J100BA
15K6060H151K100BA
15K6060H181K100BA
15K6060H201K085BA
15K6060H221K075BA
15K6060H271K065BA
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
'Back connection is made directly to the silicon substrate or to an ohmic contact on the front.
6-3
I
I
MOS CAPACITORS
TYPE 15K SINGLE-SECTION MOS CAPACITORS
'8'
Capacitance
(pF)
5.0
8.2
10
12
15
18
22
27
33
39
47
56
68
82
100
120
150
Chip Size
(mils)
20
20
20
20
20
20
20
25
25
25
45
45
45
45
45
45
45
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
20
20
20
20
20
20
20
25
25
25
45
45
45
45
45
45
45
'C'
Chip Size
(mm)
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.64
0.64
0.64
1.14
1.14
1.14
1.14
1.14
1.14
1.14
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
WVDC
(V)
Part Number
Chip
Code*
100
100
100
100
100
80
65
90
75
60
100
100
100
100
100
80
60
15K2020H5ROD100BB
15K2020H8R2M100BB
15K2020H100K100BB
15K2020H120K100BB
15K2020H150K100BB
15K2020H180K080BB
15K2020H220K065BB
15K2525H270K090BB
15K2525H330K075BB
15K2525H390K060BB
15K4545H470K100BB
15K4545H560K100BB
15K4545H680K100BB
15K4545H820K100BB
15K4545HI01M100BB
15K4545H121K080BB
15K4545H151K060BB
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
WVDC
(V)
Part Number
Chip
Code*
50
40
35
30
80
65
50
40
40
35
30
15K3030H470K050BC
15K3030H560K040BC
15K3030H680K035BC
15K3030H820K030BC
15K4545HI0IK080BC
15K4545H121K065BC
15K4545H151K050BC
15K4545H181K040BC
15K4545H201M040BC
15K4545H221K035BC
15K4545H271K030BC
C
C
C
C
C
C
C
C
C
C
C
0.51
0.51
0.51
0.51
0.51
0.51
0.51
0.64
0.64
0.64
1.14
1.14
1.14
1.14
1.14
1.14
1.14
*No ohmic connection to backside is provided on the front surface.
Capacitance
(pF)
47
56
68
82
100
120
150
180
200
220
270
Chip Size
(mils)
30
30
30
30
45
45
45
45
45
45
45
x
x
x
x
x
x
x
x
x
x
x
30
30
30
30
45
45
45
45
45
45
45
Chip Size
(mm)
0.76
0.76
0.76
0.76
1.14
1.14
1.14
1.14
1.14
1.14
1.14
x
x
x
x
x
x
x
x
x
x
x
0.76
0.76
0.76
0.76
1.14
1.14
1.14
1.14
1.14
1.14
1.14
* Has remote bonding pads. Bonding area has extra protection with thicker dielectric under the pad. Active capacitor area is passivated with
silicon nitride. No ohmic connection to backside is provided on the front surface.
6-4
MOS CAPACITORS
TYPE 16K
MULTI-SECTION MOS CAPACITORS
'A'
'C'
'8'
Capacitance
(pF)
0.5/1.0/2.0/4.0/8.0/16
1.0/2.0/4.0/8.0/16/32
2.0/4.0/8.0/16/32/64
10/15
20/33
1.0/2.0/4.0/8.0
3.0/4.5
7.0/10.5
0.25/0.5/1.0/2.0
1.D12.0/4.0/8.0
Chip Size
(mils)
52
52
52
20
30
40
20
20
30
30
x
x
x
x
x
x
x
x
x
x
36
36
36
20
30
20
20
20
20
20
Chip Size
(mm)
WVDC
(V)
Part Number!!)
x
x
x
x
x
x
x
x
x
x
140
70
30
28
45
100
90
40
150
40
16K1001
16KI002
16KI003
16KI004
16KI005
16KI006
16K1007
16K1008
16KI009!21
16KlOlO
1.32
1.32
1.32
0.51
0.76
1.02
0.51
0.51
0.76
0.76
0.91
0.91
0.91
0.51
0.76
0.51
0.51
0.51
0.51
0.51
Chip Code
A
A
A
C
C
B
C
C
B
B
NOTES:
1. Type 16K part numbers are sequentially assigned to 10 designs. Capacitance tolerance must be specified by adding the appropriate letter from the Type
15K Part Numbering System.
2. Not available with ± 5% tolerance.
6-5
PACKAGE INFORMATION
SECTION 7-PACKAGE INFORMATION
TO-18 ............................................................................ 7-2
TO-39 ............................................................................ 7-3
TO-52 ............................................................................ 7-4
TO-71 ............................................................................ 7-5
TO-72 ............................................................................ 7-6
TO-78 ............................................................................ 7-7
TO-226AA (EBC Pinning) ............................................................. 7-8
TO-226AA (ECB Pinning) ............................................................. 7-9
TO-226AA (BEC Pinning) ............................................................ 7-10
TO-226AA (DSG/SDG Pinning) ........................................................ 7-11
TO-226AA (DGS/SGD Pinning) ........................................................ 7-12
TO-226AA (GSD/GDS Pinning) ........................................................ 7-13
TO-226AB (TO-18 Lead Form) ........................................................ 7-14
TO-236AA ........................................................................ 7-15
TO-236AB (BEC/EBC Pinning) ........................................................ 7-16
TO-236AB (DSG Pinning) ............................................................ 7-17
TO-236AB (A-NC-K Pinning) .......................................................... 7-18
TO-236AB (A-A-K Pinning) ........................................................... 7-19
TO-236AB (K-A-A/K Pinning) ......................................................... 7-20
TO-236AB (K-K-A Pinning) ........................................................... 7-21
TO-236AB (A-K-NC Pinning) .......................................................... 7-22
TO-243AA ........................................................................ 7-23
14-Pin Dual In-Line Plastic .......................................................... 7-24
16-Pin Dual In-Line Plastic .......................................................... 7-25
Chip Packaging .................................................................... 7-26
Packaging for Small-Outline Devices ................................................... 7-27
Tape-and-Reel Packed TO-236AA/AB .................................................. 7-28
Axial-Taped TO-226AA .............................................................. 7-29
Radial-Taped TO-226AA ............................................................. 7-30
I
7-1
PACKAGE INFORMATION
TO-18
DIMENSIONS IN INCHES
3 LEADS 0.019 DIA
0.016
.
0.210
0.170
0.195 DIA
0.178
.
=
0.230 DIA
0.209
.
0.048
0.028
=
L-
0.030 M A X ' - 1 t J
0.500 MIN.
Owg. No. A·13,577
DIMENSIONS IN MILLIMETERS
Based on 1" = 25.4 mm
3
_ _ _ 1.22
0.71
5.84 DIA
5.31
.
2
Dwg. No. A-13,578
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
~ 400
f-
~
:J
-'
5:
300
z
o
g
200
If)
If)
"'"
~ i'o..
o
a:
w
~
TJ IMAX)
100
"' ~ ~
= 200· C
~·S&3
a.
w
..... ~
s
Vl
o
~
0.4
"""·C>1t--
"- r-o.,
'.".
o
25
50
75
100
125
150
CASE TEMPERATURE IN ·C
",
175
200
Dwg. No. A-13,582
7-3
PACKAGE INFORMATION
TO-52
DIMENSIONS IN INCHES
3 LEADS 0.019 DIA
0.016
.
0.150
---0:115
.-
0.195 DIA
0.178
.
L
0.230 DIA
0.209
.
0.048
0.028
c
0.030 M A X . - l t J
0.500 MIN.
Dwg. No.A-13,583
DIMENSIONS IN MILLIMETERS
Based on 1" = 25.4 mm
3
_ _ _ 1.22
0.71
5.84 DIA
5.31
.
Dwg. No. A-13,584
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
Vl
t--
t:i
400
5:
~
:J
:::!
L
~
300
z
0
~
11.
Vi 200
Vl
15
0::
W
5:
0
"
~.
I
TJ(MAX)
= 175·C
'C'/tj,
I'...~
100
Il.
W
05
5:
otl.
W 100
"c/11-
~~
~
'"
""""'"
u
it
0
25
50
75
100
125
AMBIENT TEMPERATURE IN °C
7-5
....
150
,
' ....
175
Dwg. No. A~13,588
PACKAGE INFORMATION
TO-72
DIMENSIONS IN INCHES
i4---_f- 0.100 DIA.
0.230
0.209 DIA.
Dwg. No. A-13,589
DIMENSIONS IN MIlliMETERS
Based on \"
4
=
25.4 mm
LEADS
"'---"1- 2.54 DIA.
5.84 DIA
5.31
.
Dwg. No, A-13,590
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
::' 400
~:::i
-'
~
300
~
z
o
~Vi
'" '"'
TJ IMAX) = 200· C
.....
200
/fo/
~~
200
50
75
100
'"
125
Terminal
1
2
Sl
D1
Gl
3
4
5
6
7
8
,q
o
a..
Pin
10,
"
150
AMBIENT TEMPERATURE IN °C
7-7
,
175
Owg. No. A-13,594
Case
S2
02
G2
Open
PACKAGE INFORMATION
TO-226AAlSTYLE CT
DIMENSIONS IN INCHES
0.165
14---10+- 0.125
0.115
0.080
Owg. No. A-13,6l0
DIMENSIONS IN MILLIMETERS
Based on 1" = 25.4 mm
+
5.20
4.45
*
t
IL
I
5.33
4.32
4
~I
MIN.
-.L
12.70 MIN.
1
g;~
14----.,~ 4.19
3.18
2.66
2.04
~6:;-
SEATING PLANE
2.42
Owg. No. A-13,61l
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
Vl
~ 700
:;:
:l
600
.....
"
}:
~ 500
z
o
i= 400
~
Vi
B 300
I TJ IMAX) =150°C I
~
""","'00 °
~ 200
n.
100
U
o
«
>::
~
~.",
"
a::
w
tll
CT PINOUT
~~
25
50
Pin
Terminal
1
Emitter
Base
Collector
2
3
~
~ "-
75
100
125
AMBIENT TEMPERATURE IN °C
"""
150
Dwg. No. A-13,612
7-8
PACKAGE INFORMATION
TO-226AAlSTYLE CZ
DIMENSIONS IN INCHES
0.165
0.125
g:~;g --jooI1·1---....~-+I..·-- 0.500 M I N I ~~~;
0.115
0.080
g;~;
~[)~~:: J~-_.>---__M_t_·: :
L
SEATING PLANE
0.105
0.095
Dwg. No. A-13,610
DIMENSIONS IN MILLIMETERS
Based on 1"
+
5.20
4.45
*
t
I_
5.33
4.32
~I
.....L
=
25.4 mm
1270 MIN.
1
: J~--
I
MIN.
~;~
L
SEATING PLANE
2.66
2.42
Dwg. No. A·13.611
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
Vl
t:
~::::;
....J
700
600
'-
"
~
~ 500
z
o
i= 400
~
iii
B300
I TJ (MAX I =150·C I
~
~~
C/lj,-
""
a:
~
o0..
200
l!!
100
'"u
a
~
~
CZ PINOUT
"I.
25
50
Pin
Terminal
1
Emitter
Collector
Base
2
3
~
'"
""'"
75
100
125
AMBIENT TEMPERATURE IN ·C
"
150
Dwg. No. A·13.612
7-9
PACKAGE INFORMATION
TO-226AA1STYLE CP
DIMENSIONS IN INCHES
~ -loo1~1-----1·MI"~--0.500
+
--'1
MINi
1
0.165
g:g;~
I+---IM- 0.125
0.115
0.080
0.1351====J~~~~~~~~~ _---.l_
r_b:
0.205
M
5
0_.1.Ll__ __
0'05-
LSEATING PLANE
J-
0.095
Dwg. No. A-13,610
DIMENSIONS IN MILLIMETERS
Based on 1" = 25.4 mm
"I~
14
_5_.3_3
4.32
12.70 MIN.
--1I
~_:L. !0_5 -r=·r=3n
I+--.-+-- 4.19
3.18
0.55
0.38
2.66
2.04
: JL-
__
L
SEATING PLANE
2.66
2.42
Dwg. No. A-13,611
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
If)
~ 700
:::
:l
600
~
I T (MAXI =150·C I
""""
"
!"; 500
z
o
~ 400
0.:
iii
is 300
If)
J
~"'~
"","'00 •
W
~ 200
a..
~
100
'"U
0
~
~~
""'-"'-
<:
u
'&.
a
25
50
75
0.013
0.10
100
125
150
AMBIENT TEMPERATURE IN ·C
Dwg. No.A·13.616
Die size = 0.635 mm by 0.635 mm (0.025" by 0.025"). Other factors that determine allowable
package power dissipation in application include circuit board material, pad size, and proximity of
other heat producing circuit elements.
7-21
PACKAGE INFORMATION
TO-236AB/STYLE CU
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
Based on 25.4 mm = 1"
~
dr7
0.0236
t
II OOOM
--If..- 0.0051
[
[0.0005
0.0040
Dwg. No.
A~12,238B
0.013
0.10
Dwg. No. A-12,238B MM
IN
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
~
300r-------~--------~------~~------~------~
t-
~
~
::::i
:::!
~
~ 200~~~--~---------+--------~--------4_------~
z
o
~
a.:
~
~
o
[t:
100
w
~
Pin
!l.
1
W
2
3
~l<:
U
~
O~
25
______
~
______
50
~~
75
______
~
______
100
~
______
125
AMBIENT TEMPERATURE IN·C
~
150
Dwg No. A-13.616
Die size = 0.635 mm by 0.635 mm (0.025" by 0.025"). Other factors that determine allowable
package power dissipation in application include circuit board material, pad size, and proximity of
other heat producing circuit elements.
7-22
CU PINOUT
Terminal
Anode
Cathode
No Connection
PACKAGE INFORMATION
TO-243AA
DIMENSIONS IN INCHES
DIMENSIONS IN MILLIMETERS
Based on 25.4 mm = 1"
4.4°
4.60
H
3.94
-/lB I-
425
11.83 1
~:~~
F1i
;::g -1
LJ -j I-r-
g39
g~~~;
=l
0.0552
g:~~il -f~~?,1-
r]
0.35
044
1.J -j I--
0.0630--j
0.0138
r00173
--L-_--'-~=4g~~~
H
.1
nT---t~~6 T~
g1. "'~~f~ g!~
ggk
0.0591
-=-j I-- om"
I~~~II
00189
BASIC
150
BASIC
300
BASIC
0.1182
BASIC
Dwg. No. A-12,608 MM
Dwg. No. A-12,60B IN
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
~
~
:J
:::!
~
~
z
0
i=
'&
Vi
Vl
I
0
a::
w
~
0
a..
w
(9
«
l<:
u
«
a..
25
50
75
100
125
150
AMBIENT TEMPERATURE IN ·C
Dwg. No. A-13,622
Die size = 0.635 mm by 0.635 mm (0.025" by 0.025"). Other factors that determine allowable package power dissipation in
application include circuit board material, pad size, and proximity of other heat producing circuit elements.
7-23
PACKAGE INFORMATION
14-PIN DUAL IN-LINE PLASTIC
DIMENSIONS IN INCHES
DIMENSIONS IN MILLIMETERS
Based on 1" = 25.4 mm
rrrt=
0.014
0.008
14 13 12
"
10 9
8
5
7
INDEx~~~::::::~11 ~~15.
J
II
2
I--
_0.065
0,035
3 4
0.785
O.73~
6
--I
0.075 REF.
0.100:t 0.010
NOTE 1
O·
5.08 MAX.
0.200 MAX.
#tim~~'
#tim'~~'
0.020
MIN.
wmrf=+
---.JLO.023
0.51
0.100 MIN.
'If -0.015
MINwmrf+
--1LO.58
l r -0.39
Dwg. No. A-5496G IN
2.54 MIN.
Dwg. No. A-5496G MM
NOTES:
1. Lead spacing tolerances is non-cumulative.
2. Exact body and lead configuration at vendor's option within limits shown.
3. Lead gauge plane is 0.030" (0.76 mm) max. below seating plane.
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
3.0r-----~------~----~------~----~------~
5
~0.:
2.0~......~~------~------_r------~~------~------~
Vi
Vl
Ci
0:
W
:ii=
o
1.01-------+----+---+----"'~_iI__--_+---__I
0W
t!)
4:
:.::
U
~
o~____~______~______~------~------~----~
a
AMBIENT TEMPERATURE IN ·C
Dwg. No. A-13,623
7-24
PACKAGE INFORMATION
16-PIN DUAL IN-LINE PLASTIC
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
Based on 1"
= 25.4 mm
;~~~~
g:~~
,~,fJ~::~::jl LLr
15'
0'
1.
~21
1.65/
O.89----p
7
3 •
t-- 19 .93
,.:~
20<'0.25
1
-----..
/
~NOTE
18.67
0.200 MAX
5.0B MAX
_!__
-¥=-WiWrrl
+¥fm¥rlf.
0rSEATING PLANE
.J/EATING PLANE
0.100 MIN
0.020
MIN
Jl
JLO,023
0.015
II
-0025 REF
.
0.51 MIN
1r-~.;~
-1
~5'
MIN
f,'6'
REF
Owg. No.
Dwg. No. A-.6402C IN
A~6402C
NOTES:
L Lead spacing tolerances is non-cumulative.
2. Exact body and lead configuration at vendor's option within limits shown.
3. Lead gauge plane is 0.030" (0.76 mm) max. below seating plane.
MAXIMUM ALLOWABLE PACKAGE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
~ 3.0r-----~------~-------r------~------~----__,
I-
~
~
z
z
o
~
2.0~----~~~--~------+-----_4------~----__4
'&
iii
~
o
a::
w
~ 1.0 J------+----+----+--:3II~+---_+---_I
o
a...
w
(!)
«
:.:
U
'&
o~
o
____
~
______
25
~
______
50
~
75
____
~
______
100
AMBIENT TEMPERATURE IN °C
7-25
~
____
125
~.
150
Dwg. No. A-13,624
MM
PACKAGE INFORMATION
SEMICONDUCTOR CHIP PACKAGING
UNSCRIBED WAFER
IN NATURAL POLYPROPYLENE TRAY
SAWN WAFER
ON STRETCHED MEMBRANE
'::::"~~
CONTAINMENT
SPRING
INDIVIDUAL COMPARTMENTS
IN SEE-THROUGH PLASTIC BOX
FF 104 FRAME
--+
WAFER-_ _
(ACTIVE SIDE DOWN)
Owg. No. A-11,547
Dwg. No. A-ll,626
Dwg. No. A-11,621
MAXIMUM ALLOWABLE POWER DISSIPATION
AS A FUNCTION OF AMBIENT TEMPERATURE
Vl
l-
5.0
I-
~
~
ALUMINA - 25.4 MM x 25.4 MM x 0.25 MM
-1.0 IN. x 1.0 IN. x 0.01 IN.
CHIP SIZE =0.635 MM x 0.635 MM
0.025 IN. x 0.025 IN.
TJ(MAX) = 150°C/W
4.0
=
z
Q
I-
et
3.0
Vl
Vl
0
0::
W
~
2.0
0
a..
w
..J
al
1.0
~0
..J
..J
~" ,c~ ~'~~~w~""" ~ ~ ~" '
c
~
'
"
'~~'
" ,,"
,,;
,
,
,
Q- - - D
I
HOW TO ORDER
SECTION 8 - HOW TO ORDER
Sprague Facilities ..................................................................
How to Place an Order .............................................................
Sales Locations
U.S. and Canada ................................................................
Europe and Mideast ...............................................................
Asia ...........................................................................
8-2
8-2
8-3
8-4
8-5
I
j
8-1
I·
I
HOW TO ORDER
SPRAGUE FACIUTIES
Sprague Electric Company manufactures active and passive components at 15 North American locations and in five countries in Europe and
the Far East. It has been a high-volume producer
of semiconductors for more than 30 years.
Headquarters of the Semiconductor Division is
in Concord, New Hampshire. Wafer fabrication for
discrete semiconductors is done at Worcester,
Massachusetts, and Garland, Texas. Assembly
operations are located at the Concord and Garland
plants and in Manila, the Philippines.
HOW TO ORDER
To place an order, obtain price and delivery information, or
request technical literature, contact your local Sprague sales
office or sales representative. (See the following lists of sales
locations.) For additional help:
From U.S. and Canada
From Asia
From Europe and Mideast
Sprague Electric Co.
92 Hayden Avenue
Lexington, MA 02173
(617) 862-5500
Telex: 710-321-0021
Sprague Asia Ltd.
G.P.O. Box 4289
Hong Kong
0-283188
Telex: 43395
Sprague World Trade Corp.
18 Avenue Louis Casai
1209-Geneva
Switzerland
98-4021
Telex: 845-23469
Requests for technical information and applications assistance
can be sent to the appropriate manufacturing facility.
For discrete semiconductor chips, discrete semiconductors in
plastic packages, MOS capacitors:
Sprague Electric Company
70 Pembroke Road
Concord, NH 03301
(603) 224-1961
Telex: 710-361-1495
For junction field-effect transistors in metal cases:
Sprague InterFET
322 Gold Street
Garland, TX 75042
(214) 487-1287
For monolithic transistor arrays:
Sprague Electric Company
115 Northeast Cutoff
Worcester, MA 01606
(617) 853-5000
Telex: 710-340-6304
8-2
HOW TO ORDER
Sprague Electric Company
World Headquarters
92 Hayden Avenue
Lexington. MA 02173
(617) 862-5500
SALES OFFICES
U.S. and Canada
UNITED STATES
CONNECTICUT (continued)
ALABAMA
Data Mark Inc.
Unit 7C-2S14 Boston Post Road
Guilford 06437
Tel. 203/453-0575
EPllnc.
Suite 13 -
9694 Hwy. 20 W
Madison 35758
Tel. 2051461-7000
DIST. OF COLUMBIA
Sprague Electric Company
Electramark Inc.
Suite 21
3322 South Memorial Parkway
Huntsville 35801
Tel. 205/883-9948
Suite 311
ARIZONA
Sprague Electric Company
Suite 209 - 1819 S. Dobson Rd.
Mesa 85202 - 5690
Tel. 6021244·0154
Tel. 602/831·6762
Sprague Electric Company
Suite 601
1150 E. Pennsylvania Street
Tucson 85714 - 1640
Tel. 602/746-0955
14333 Laurel-Bowie Road
Laurel, MD 20708 - 1130
Tel. 301/953-1717
MARYLAND
Sprague Electric Company
Suite 311
14333 Laurel-Bowie Road
Laurel 20708 - 1130
Tel. 301/792-4890
Trinkle Sales Inc.
P.O. Box 5320
Cherry Hill, NJ 08034 Tel. 609/795·4200
Trinkle Sales Inc.
P.O. Box 5320
Cherry Hill, NJ 08034 Tel. 609/795-4200
0460
FLORIDA
Sprague Electric Company
P.O. Box 1410
Altamonte Springs 32715 - 1410
Tel. 305/831-3636
Sprague Electric Company
Suite 419 - 1500 NW. 62nd Street
Ft. Lauderdale 33309 - 1802
Tel. 305/491-7411
CALIFORNIA (Metro. L.A.)
Sprague Electric Company
Suite 150 - 3100 S. Harbor Blvd.
Santa Ana 92704
TeL 714/549-9913
Sprague Electric Company
Suite T, Building 501
8001 North Dale Mabry
Tampa 33614 - 3265
Tel. 813/935-8203
Sprague Electric Company
Suite 459
15350 Sherman Way
Van Nuys 91406
Tel. 818/994-6500
GEORGIA
Electramark Inc.
6030 - I Unity Drive
Norcross 30071 - 3583
Tel. 404/446-7915
(Northern)
William J. Purdy Company
770 Airport Blvd.
Burlingame 94010 - 1927
Tel. 415/347-7701
(San Diego)
Miner Associates, lne.
Suite 117 - 10721 Treena Street
San Diego 92131 -1009
Tel. 619/566·9891
COLORADO
William J. Purdy Company
5570 E. Yale Ave.
Denver 80222 - 6907
Tel. 303/753-6800
Todd & Fry Associates
P.O. Box 1689
Longmont 80502 - 1689
Tel. 3031776-7331
KENTUCKY
Sprague Electric Company
821 Corporate Drive
Unit #16, Suite 200
Lexington 40503
Tel. 606/224-4230
Electronic Marketing Associates
Suite 101
6695 Peachtree Industrial Blvd.
Atlanta 30360 - 2116
Tel. 404/448-1215
ILLINOIS (Northern)
D. Dolin Sales
609 Academy Drive
Northbrook 60062
Tel. 312/498-6770
(Southern)
EPllnc.
Suite 201 - 103 W. Lockwood
St. Louis, MO 63119 - 2915
Tel. 314/962-1411
INDIANA
Sprague Electric Company
Suite 290 - 8200 Haverstick Road
Indianapolis 46240
Tel. 317/253-4247
CONNECTICUT
Sprague Electric Company
88 Main Street South
Southbury 06488
Tel. 203/264-9595
IOWA
J. R. Sales Engineering. Inc.
1930 St. Andrews, N. E.
Cedar Rapids 52402
Tel. 319/393-2232
Sprague Electric Company
120 Hartford Turnpike South
P.O Box 578
W~JljJlgford 06492 - 0578
Tel 203/284-8300
KANSAS
EPllnc.
9016 West 83rd Street
Overland Park 66204
Tel. 913/341-2024
0460
(Upstate)
Sprague Electric Company
2002 Teall Ave.
Syracuse 13206 Tel. 3151437·7311
1542
Paston-Hunter Co., lne.
2002 Teall Ave.
Syracuse 13206 - 1596
Tel. 315/437-2843
NORTH CAROLINA
Sprague Electric Company
9741·M Southern Pine Blvd.
Charlotte 28210 - 5560
Tel. 704/527-1306
MASSACHUSETTS
New England Technical Sales Corp.
101 Cambridge Street
Burlington 01803
Tel. 617/272-0434
Electronic Marketing Associates
9225 Honeycutt Creek Rd.
Raleigh 27609 - 1523
Tel. 919/847-8800
MICHIGAN
Sprague Electric Company
Suite 301 - 2155 Jackson Road
Ann Arbor 48103 - 3917
Tel. 313/761-2014
OHIO
Sprague Electric Company
Suite 330 - 555 Metro Place North
Dublin 43017 - 1375
Tel. 6141761-1881
MINNESOTA
HMR, Inc.
9065 Lyndale Ave. South
Minneapolis 55420 - 3520
Tel. 612/888-2122
MISSISSIPPI
EPllnc.
Suite 13 - 9694 Hwy. 20 W
Madison, AL 35758
Tet. 205/461-7000
MISSOURI
EPllnc.
Suite 201 - 103 W. Lockwood
St. Louis 63119 - 2915
Tel. 3141962-1411
NEBRASKA
J. R. Sales Engineering, Inc.
1930 St. Andrews. N. E.
Cedar Rapids. Iowa 52402
Tel. 3191393-2232
NEW HAMPSHIRE
New England Technical Sales Corp.
101 Cambridge Street
Burlington, MA 01803
Tel. 617/272-0434
NEW MEXICO
William J. Purdy Company
120 LaVeta Drive NE
Albuquerque 87108 - 1613
Tel. 505/266-7959
NEW YORK (Downstate)
Sprague Electric Company
2001 Palmer Ave.
Larchmont 10538 - 2420
Tel. 914/834-4439
(Long Island)
Sprague Electric Company
P.O. Box 541
Central Islip 11722 - 0541
Tel. 516/234-8700
8-3
TEXAS (continued)
Sprague Electric Company
Suite 350W - 1106 Clayton Lane
Austin 78723 - 1033
Tel. 512/458-2514
UTAH
William J. Purdy Company
5570 E. Yale Avenue
Denver, CO 80222 ~ 6907
Tel. 303/753-6800
VIRGINIA
Sprague Electric Company
1 East Preston St
Lexington 24450 - 2324
Tel. 703/463·9161
Sprague Electric Company
Suite 311
14333 Laurel-Bowie Road
Laurel, MD 20708 - 1130
Tel. 301/953-1717
Trinkle Sales Inc.
P.O. Box 5320
Cherry Hill, NJ 08034 Tel. 609/795-4200
0460
OREGON
Sprague Electric Company
Suite H
16111 S.E. McGillivray Boulevard
Vancouver, WA 98664 - 9025
Tel. 503/225-0493
Tel. 206/892-0361
WASHINGTON
Sprague Electric Company
3826 Woodland Park, North
Seattle 98103 - 7996
Tel. 206/632-7761
William J. Purdy Company
7799 Southwest Cirrus Drive
Beaverton 97005 - 5945
Tel. 5031641-9373
Sprague Electric Company
Suite H
16111 S.E. McGillivray Blvd.
Vancouver 98664
Tel. 206/892-0361
Tel. 503/225-0493
PENNSYLVANIA
Trinkle Sales Inc.
P.O. Box 5320
Cherry Hill, NJ 08034 - 0460
Tel. Phila. 215/922-2080
William J. Purdy Company
4082-148th Ave. N.E.
Redmond 98052 - 5165
Tel. 206/882-3144
SOUTH CAROLINA
Electronic Marketing Associates
210 W. Stone Ave.
Greenville 29609 - 5499
Tel. 8031233-4637
TENNESSEE (Eastern)
Electronic Marketing Associates
9225 Honeycutt Creek Road
Raleigh, NC 27609 - 1523
Tel. 919/847-8800
(Western)
EPI Inc.
Suite 13 - 9694 Hwy. 20 W
Madison, AL 35758
Tel. 205/461-7000
TEXAS
Sprague Electric Company
Suite 220
9319 LBJ Freeway
DaJlas 75243 - 3403
Tel. 214/235·1256
WISCONSIN
D. Dolin Sales
131 West Layton Ave.
Milwaukee 53207 - 5991
Tel. 414/482-1111
CANADA
-'-.~~Suite 220
2375 Steeles Avenue. W.
Downsview, Ontano M3J 3A8
Tel. 416/665-6066
Sprague Electric of canada, Ltd.
Suite 1610 - 85 Albert Sf.
Ottawa, Ont. Kl P 6A4
Tel. 613/238-2542
Bird Marketing, Inc.
Unit 1
111 Esna Park Drive
Markham, Ont. L3R1H2
Tel. 416/477-7722
~
!
HOW TO ORDER
Sprague World Trade Corporation
18 Avenue Louis Casai
1209 Geneva, Switzerland
22-984021
SALES OFFICES
Europe and the Mideast
Austria
Sprague Elektronik GmbH, Wasserburger Landstr. 268, 0-8 MUnchen, Tel. 089-4301077
Distributor: Elbatex GmbH, Eitnerg. 6, A-1232 Wien, Tel. 0222/86-32-11-0
Benelux
Sprague Benelux, Excelsiorlaan 21, Bus 3, B-1930 Zaventem, Tel. Belgium 02-721 4860
Finland
Field Oy, Veneentekijiintie 18, SF-00210 Helsinki, Tel. 80-6922577
France
Sprague France S.A.R.L., 3 rue Camille Desmoulins, F-94230 Cachan, Tel. 1-54766 00
Sprague France S.A.R.L., BP 2174, rue Pierre et Marie Curie, F-37021 Tours Cedex, Tel. 47-54 05 75
Sprague France S.A.R.L., 129 rue Servient, F-69003 Lyon, Tel. 7-86361 20
Sprague France S.A.R.L., 20 chemin de la Cepiere, F-31081 Toulouse Cedex, Tel. 61-41 0692
Sprague France S.A.R.L., 10 avenue de Crimee, F-35000 Rennes, Tel. 99-533637
West Germany Sprague Elektronik GmbH, Hainer Weg 48, 0-6000 Frankfurt 70, Tel. 69-609005-0
East Germany
Dipl. Gerhard Staits, Nordbahnstrasse 44, A-1020 Wien, Tel. 43-222 24 71 37
Greece
Emitron Electronic Corp., Dimaraki SI. 22, GR-Athens 301, Tel. 021-346 97 97
Hungary
Apical S.A., Bahnstr. 25, CH-8603 Schwerzenbach, Tel. 01-8252526
Israel
Racom Electronics Co. Ltd., 7 Kehilat Saloniki St., P.O. Box 21120, IL-Tel Aviv 61210,
Tel. 03-49 19 22
Italy
Sprague Italiana S.p.A., Via G. de Castro 4, 1-20144 Milano, Tel. 02-4987891
Norway
Hefro Teknisk AlS, Postboks 6596, Rodelokka, N-Oslo 5, Tel. 02-380286
Portugal
Sprague World Trade Corp., Tour Balexert, 18 avenue Louis Casa'i, CH-1209 Geneva, Tel. 22-984021
Distributor: Niposom, Rua Casimiro Freire 9A, P-1900 Lisboa, Tel. 351-1896610
South Africa
Allied Electric (Pty) Ltd., P.O. Box 6387, ZA-Dunswart 1508, Tel. 892.1001
Spain
Saenger S.A., c/Barri Vermeil, E-sln Barcelona 30, Tel. 3-313 73 00
Saenger S.A., c/HIIarion Eslava 47, E-28015 Madrid, Tel. 91-2445807
Sweden
Sprague Scandinavia AB, Sollentunavaegen 141, Box 802,19128 SoliEintuna, Tel. 011-46-8-920595
Switzerland
Sprague World Trade Corp., Tour Balexert, 18 avenue Louis Casai, CH-1209 Geneva, Tel. 22-984021
Distributor: Telion AG, Albisriederstr, 232, CH-8047 ZUrich, Tel. 01-493 15 15
Turkey
Kapman Komandit, Plastic Han No.1, Yanikkapi sokak, P.O. Box 158, Beyoglu, TR-Istanbul,
Tel. 45 76 25
U.K.
Sprague Electric LTD, Module 0, Airtech 2, Fleming Way, Crawley, West Sussex, RH10 2YQ,
Great Britain, Tel. 0293517878, Tlx: 877813, Fax: 0293551363
Yugoslavia
Belram S.A., 83 avenue des Mimosas, B-Brussels 15, Tel. 02-734 33 32
Other Eastern
Countries
Sprague World Trade Corp., Tour Balexert, 18 avenue Louis Casa'i, CH-1209 Geneva, Tel. 22-984021
Otece, Avenue des Camelias 50, B-1150 Bruxelles, Tel. 02-7703819
8-4
HOW TO ORDER
Sprague Asia Ltd.
G.p.a. Box 4289
Hong Kong
0-283188
SALES OFFICES
Asia
Hong Kong
Sprague Asia Ltd.
G.p.a. Box 4289
Hong Kong
Tel. 0-283188
Japan
Sprague Japan K.K.
Shinjuku KB Building
11-3, Nishi-Shinjuku 6-Chome
Shinjuku-Ku, Tokyo 160
Japan
Tel. (03) 348-5221
Korea
Technomil Ltd.
Sprague Korea Branch
4th FI., Daiyoung Building
44-1, Yoido-Dong
Young Dung Po-Ku, Seoul, Korea
Tel. (2) 783-9784
Singapore
Sprague Electric Private Ltd.
Singapore affice
11th Floor, 450/452 Inchcape House
Alexandra Road
Singapore 0511
Tel. 475-1826
Taiwan
Sprague Taiwan Branch
Technomil Ltd.
8/F, 142 Sec. 4
Chung Hsiao East Road
Taipei, Taiwan, R.O.C.
Tel. 771-9582
8-5
In the' construction of the components described, the full intent of the
specification will be met. The Sprague Electric Company, however, reserves
the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the design of its products, Components made under military approvals will be in accordance
with the approval requirements.
The information included herein is believed to be accurate and reliable.
However, the Sprague Electric Company assumes no responsibility for its
use; nor for any infringements of patents or other rights of third parties which
may result from its use.
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