1987_Motorola_Small Signal_Semiconductors 1987 Motorola Small Signal Semiconductors
User Manual: 1987_Motorola_Small-Signal_Semiconductors
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Package Outline
Dimensions and
Application Literature
•II
•
•
•II
•II
Reliability and
Quality Assurance
II
Selector Guides
Plastic-Encapsulated
Devices
Surface Mount
Products
Metal
Transistors
Multiple
Devices
Field-Effect
Transistors
Tape and Reel
Specifications
MOTOROLA
SMALL-SIGNAL
SEMICONDUCTORS
Prepared by
Technical Information Center
This publication presents technical information for the several product families that comprise the
Motorola small-signal semiconductor line. The families includes bipolar, field-effect transistors, and
diodes. These are available in a variety of packages; metal can, plastic, and surface mount. Complete
device specifications and typical performance curves are given on individual data sheets, which are
grouped by the various families.
A quick comparison of performance characteristics is presented in the easy-to-use selector guides
in the first section. The tables will assist in the selection of the proper transistor for a specific application.
Separate sections are included to describe package outline drawings, and to clarify the high reliability
processing and testing procedure.
The information in this book has been carefully checked and is believed to be accurate; however,
no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
purchaser of semiconductor devices any license under the patent rights to the manufacturer.
Motorola reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Motorola does not assume any liability arising out of the application or
use of any product or circuit described herein; neither does it convey any license under its patent
rights nor the rights of others. Motorola and
are registered trademarks of Motorola, Inc. Motorola,
Inc. is an Equal Employment Opportunity/Affirmative Action Employer.
®
Printed in U.S.A.
First Printing
Series C
©MOTOROLA INC., t987
Previous Edition ©t983
"All Rights Reserved"
TMOS is a trademark of Motorola Inc.
ii
ALPHANUMERIC INDEX
Motorola
Part #
2N657
2N697
2N699
2N706,A,B
2N708
2N718,A
2N720A
2N834
2N835
2N869A
2N910
2N914
2N915
2N916
2N918
2N930,A
2N956
2N1132,A
2N1613
2N1893
2N2060
2N2102
2N2218,A
2N2219,A
2N2221,A
2N2222,A
2N2223,A
2N2270
2N2368
2N2369,A
2N2453,A
2N2480A
2N2481
2N2484
2N2501
2N2605
2N2639
2N2640
2N2641
2N2642
2N2643
2N2644
2N2652,A
2N2721
2N2722
2N2723
2N2785
2N2800
2N2843
2N2844
2N2894
2N2895
2N2896
2N2897
2N2903
2N2904,A
Data
Sheet
Page #
Motorola
Part #
4-2
4-3
4-4
4-5
4-7
4-8
4-11
4-12
4-12
4-13
4-16
4-17
4-18
4-19
4-20
4-21
4-9
4-23
4-25
4-26
5-2
4-27
4-28
4-28
4-28
4-28
5-2
4-34
4-35
4-35
5-5
5-2
4-40
4-44
4-45
4-48
5-7
5-7
5-7
5-7
5-7
5-7
5-9
5-10
5-11
5-12
5-13
4-49
6-2
6-2
4-50
4-51
4-51
4-51
5-14
4-53
2N2905,A
2N2906,A
2N2907,A
2N2913
2N2914
2N2915
2N2916
2N2917
2N2918
2N2919
2N2920
2N2945,A
2N2946,A
2N3011
2N3012
2N3013
2N3014
2N3019
2N3020
2N3043
2N3044
2N3045
2N3048
2N3053,A
2N3073
2N3114
2N3135
2N3227
2N3244
2N3245
2N3249
2N3250,A
2N3251,A
2N3252
2N3253
2N3300
2N3302
2N3307
2N3308
2N3330
2N3331
2N3425
2N3437
2N3438
2N3439
2N3440
2N3459
2N3460
2N3467
2N3468
2N3485,A
2N3486,A
2N3494
2N3495
2N3496
2N3497
Data
Sheet
Page #
4-53
4-53
4-53
5-15
5-15
5-15
5-15
5-15
5-15
5-15
5-15
4-56
4-56
4-61
4-62
4-63
4-63
4-65
4-65
5-17
5-17
5-17
5-17
4-68
4-69
4-71
4-72
4-35
4-73
4-73
4-77
4-81
4-81
4-86
4-86
4-91
4-91
4-92
4-92
6-3
6-4
5-19
6-5
6-5
4-94
4-94
6-6
6-6
4-100
4-100
4-53
4-53
4-103
4-103
4-103
4-103
Devices with no page number shown are available from Motorola although not represented In this book Please contact your nearest Motorola
representative for further information
iii
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
2N3498
2N3499
2N3500
4-106
4-106
4-106
2N3501
2N3506
2N3507
2N3546
2N3634
4-106
4-112
4-112
4-114
4-117
2N3635
2N3636
2N3637
2N3648
2N3724
4-117
4-117
4-117
4-123
4-126
2N3725
2N3726
2N3727
2N3734
2N3735
4-126
5-20
5-20
4-130
4-130
2N3737
2N3743
2N3762
2N3763
2N3764
4-130
4-132
4-136
4-136
4-136
2N3765
2N3796
2N3797
2N3798
2N3799
4-136
6-7
6-7
4-142
4-142
2N3806
2N3807
2N3808
2N3809
2N3810,A
5-22
5-22
5-22
5-22
5-22
2N3811,A
2N3821
2N3822
2N3823
2N3824
5-22
6-10
6-10
6-12
6-10
2N3838
2N3903
2N3904
2N3905
2N3906
5-25
2-2
2-2
2-7
2-7
2N3909,A
2N3946
2N3947
2N3962
2N3963
6-13
4-145
4-145
4-151
4-151
2N3964
2N3965
2N3970
2N3971
2N3972
4-151
4-151
6-14
6-14
6-14
2N3993,A
2N3994
2N4013
2N4014
6-15
6-15
4-153
4-153
Motorola
Part #
Data
Sheet
Page #
2N4015
5-26
2N4016
2N4026
2N4027
2N4028
2N4029
5-26
4-157
4-157
4-157
4-157
2N4030
2N4031
2N4032
2N4033
2N4036
4-157
4-157
4-157
4-157
4-159
2N4037
2N4091
2N4092
2N4093
2N4118,A
4-159
6-16
6-16
6-16
6-18
2N4123
2N4124
2N4125
2N4126
2N4208
2-12
2-12
2-16
2-16
4-161
2N4209
2N4220,A
2N4221,A
2N4222,A
2N4234
4-161
6-20
6-20
6-20
4-163
2N4235
2N4236
2N4237
2N4238
2N4239
4-163
4-163
4-168
4-168
4-168
2N4260
2N4261
2N4264
2N4265
2N4338
4-172
4-172
2-20
2-20
6-23
2N4339
2N4340
2N4341
2N4351
2N4352
6-23
6-23
6-23
6-24
6-28
2N4391
2N4392
2N4393
2N4400
2N4401
6-32
6-32
6-32
2-25
2-25
2N4402
2N4403
2N4404
2N4405
2N4406
2-30
2-30
4-175
4-175
4-180
2N4407
2N4409
2N4410
2N4416,A
2N4453
4-180
2-35
2-35
6-34
4-13
Oe\lIces wIth no page number shown are available from Motorola although not represented In this book Please contact your nearest Motorola
representative for further Information
iv
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
2N4854
2N4855
2N4856,A
2N4857,A
2N4858,A
5-28
5-28
6-41
6-41
6-41
2N4859,A
2N4860,A
2N4861,A
2N4890
2N4926
6-41
6-41
6-41
4-189
4-185
2N4927
2N4928
2N4929
2N4930
2N4931
4-185
4-185
4-185
4-185
4-185
2N4937
2N4938
2N4939
2N4941
2N5022
5-30
5-30
5-30
5-30
4-188
2N5023
2N5058
2N5059
2N5086
2N5087
4-188
4-190
4-190
2-36
2-36
2N5088
2N5089
2N5208
2N5209
2N5210
2-41
2-41
2-42
2-47
2-47
2N5222
2N5223
2N5226
2N5227
2N5230
2-48
2-51
2-52
2-53
4-191
2N5245
2N5246
2N5247
2N5320
2N5321
6-43
6-43
6-43
4-194
4-194
2N5322
2N5323
2N5400
2N5401
2N5415
4-196
4-196
2-54
2-54
4-94
2N5416
2N5457
2N5458
2N5459
2N5460
4-94
6-45
6-45
6-45
6-46
2N5461
2N5462
2N5463
2N5464
2N5465
6-46
6-46
6-46
6-46
6-46
2N5484
2N5485
6-49
6-49
Motorola
Part #
2N5486
2N5550
2N5551
6-49
2-57
2-57
2N5555
2N5581
2N5582
2N5638
2N5639
6-51
4-28
4-28
6-53
6-53
2N5640
2N5668
2N5669
2N5670
2N5679
6-53
6-55
6-55
6-55
4-198
2N5680
2N5681
2N5682
2N5771
2N5793
4-198
4-198
4-198
2-61
5-32
2N5794
2N5795
2N5796
2N5859
2N5861
5-32
5-33
5-33
4-203
4-206
2N6426
2N6427
2N6428,A
2N6430
2N6431
2-62
2-62
2-66
4-209
4-209
2N6432
2N6433
2N6502
2N6515
2N6516
4-210
4-210
5-34
2-68
2-68
2N6517
2N6518
2N6519
2N6520
2N6659
2-68
2-68
2-68
2-68
6-57
2N6660
2N6661
2N6782
2N6784
2N6788
6-57
6-57
6-60
6-61
6-72
2N6790
2N6796
2N6798
2N6800
2N6802
6-63
6-64
6-65
6-66
6-67
2N7000
2N7002
2N7008
3N128
3N155
6-68
3-2
6-69
6-71
6-74
3N156
3N157
3N158
3N169
6-74
6-75
6-75
6-78
DevIces wIth no page number shown are available from Motorola although not represented
representative for further information
v
Data
Sheet
Page #
In
this book Please contact your nearest Motorola
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
3N170
6-78
3N171
3N201
3N202
3N203
3N204
6-78
6-80
6-80
6-80
6-85
3N205
3N209
3N211
3N212
3N213
6-85
6-87
6-92
6-92
6-92
BC107,A,B,C
BC108,A,B,C
BC109,A,B,C
BC140,-10,-16
BC141,-10,-16
4-211
4-211
4-211
4-213
4-213
BC160,-6,-10,-16
BC161,-6,-10,-16
BC17l,A,B
BC172,A,B,C
BC174,A,B
4-214
4-214
2-74
2-74
2-74
BC177,A,B,C
BC178,A,B,C
BC179,A,B,C
BC182,A,B
BC183,A,B,C
4-215
4-215
4-215
2-76
2-76
BC184,B,C
BC2l2,A,B
BC2l3,A,B,C
BC214,B,C
BC237,A,B,C
2-76
2-78
2-78
2-78
2-80
BC238,A,B,C
BC239,B,C
BC25l,A,B,C
BC25l,A,B,C
BC256,A,B
2-80
2-80
2-83
2-83
2-83
BC307,A,B,C
BC308,A,B,C
BC309,A,B,C
BC317
BC317A
2-85
2-85
2-85
2-88
2-88
BC317B
BC320,A,B
BC327,-16,-25,-40
BC328,-16,-25,-40
BC337,-16,-25,-40
2-88
2-90
2-92
2-92
2-95
BC338,-16,-25,-40
BC368
BC369
BC372,-16,-25,-40
BC373,-16,-25,-40
2-95
2-98
2-98
2-100
2-100
BC393
BC394
BC413,B,C
BC414,B,C
BC4l5,B,C
4-217
4-217
2-102
2-102
2-103
Motorola
Part #
BC4l6,B,C
BC445,A
BC446,A,B
BC447,A,B
BC448,A,B
2-103
2-104
2-105
2-104
2-105
BC449,A,B
BC450,A,B
BC485,A,B,L
BC486,A,B,L
BC487,A,B,L
2-104
2-105
2-106
2-107
2-106
BC488,A,B,L
BC489,A,B,L
BC490,A,B,L
BC517,S
BC546,A,B
2-107
2-106
2-107
2-108
2-109
BC547,A,B,C
BC548,A,B,C
BC549,A,B,C
BC550,B,C
BC556,A,B
2-109
2-109
2-113
2-113
2-116
BC557,A,B,C
BC558,A,B,C
BC559,B,C
BC560,B,C
BC617
2-116
2-116
2-121
2-121
2-123
BC618
BC635
BC636
BC637
BC638
2-123
2-124
2-126
2-124
2-126
BC639
BC640
BC650,C,CS,S
BC651,C,CS,S
BC807
2-124
2-126
2-128
2-128
3-4
BC808
BC817
BC8l8
BC846A,B
BC847A,B,C
3-4
3-5
3-5
3-6
3-6
BC848A,B,C
BC849B,C
BC850B,C
BC856A,B
BC857A,B,C
3-6
3-7
3-7
3-8
3-8
BC858A
BC859A,B,C
BC860A,B,C
BCW29
BCW30
3-8
3-9
3-9
3-10
3-10
BCW3l
BCW33
BCW60A,B,C,D
BCW61A,B,C,D
BCW65A
3-11
3-11
3-12
3-14
3-16
BCW66H
3-17
Devices with no page number shown are available from Motorola although not represented
representative for further information
vi
Data
Sheet
Page #
In
this book Please contact your nearest Motorola
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
BCW67,A,B,C
BCW68,F,G
BCW69
BCW70
3-18
3-18
3-19
3-19
BCW71
BCW72
BCX17
BCX18
BCX19
3-20
3-20
3-21
3-21
3-21
BCX20
BCX58,-7,-8,-9,-10
BCX59,-7,-8,-9,-10
BCX70G,H,J,K
BCX71G,J,K
3-21
2-129
2-129
3-22
3-24
BCX78,-7 ,-8,-9,-10
BCX79,-7,-8,-9,-10
BCY58,-VII,-VIII,-IX,-X
BCY59,-VII,-VIII,-IX,-X
BCY70
2-132
2-132
4-218
4-218
4-223
BCY71
BCY72
BCY78,-VII,-VIII,-IX,-X
BCY79,-VII,-VIII,-IX,-X
BDB01A,B,C,D
4-223
4-223
4-225
4-225
2-135
BDB02A,B,C,D
BDC01A,B,C,D
BDC02A,B,C,D
BDC05
BDC06
2-137
2-139
2-140
2-141
2-142
BDC07
BDC08
BF199
BF224
BF240
2-141
2-142
2-143
2-144
2-145
BF241
BF244,A,B,C
BF245,A,B,C
BF246,A,B,C
BF247,A,B,C
2-145
6-94
6-94
6-95
6-95
BF254,-3,-4
BF256,A,B,C
BF257
BF258
BF259
2-148
6-96
4-229
4-229
4-229
BF366
BF371
BF373
BF374
BF375,C,D
2-150
2-151
2-151
2-152
2-152
BF391
BF392
BF393
BF420
BF421
2-154
2-154
2-154
2-155
2-156
BF422
BF423
BF491
2-155
2-156
2-157
Motorola
Part #
BF492
BF493
2-157
2-157
BF493S
BF506
BF844
BF845
BF959
2-158
2-159
2-161
2-161
2-163
BFR30
BFR31
BFR92
BFR93
BFS17
3-26
3-26
3-27
3-28
3-29
BFW10
BFW11
BFW43
BFX38
BFX40
6-97
6-97
4-230
4-232
4-232
BFX48
BFX85
BFY50
BFY51
BFY52
4-234
4-235
4-237
4-237
4-237
BS107,A
BS170
BSR56
BSR57
BSR58
6-99
6-100
3-30
3-30
3-30
BSS50
BSS51
BSS52
BSS63
BSS64
4-239
4-239
4-239
3-32
3-32
BSS71
BSS72
BSS73
BSS74
BSS75
4-241
4-241
4-241
4-244
4-244
BSS76
BSS78
BSS79B,C
BSS80B,C
BSS82B,C
4-244
4-247
3-34
3-35
3-36
BSS89
BSS123
BSV15,-10,-16
BSV16,-10,-16
BSV17,-10,-16
6-102
3-37
4-249
2-249
2-249
BSV52
BSW67A
BSW68A
BSX20
BSX29
3-38
4-251
4-251
4-252
4-254
BSX32
BSX45,-6,-10,-16
BSX46,-6,-10,-16
BSX47,-6,-10,-16
BSX59
4-255
4-256
4-256
4-256
4-258
Devices with no page number shown are available from Motorola although not represented
representative for further Information
vii
Data
Sheet
Page #
In
this book Please contact your nearest Motorola
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
P8jle #
BSX60
BZX84C
IRFD1Z0
IRFD1Z3
IRFD110
4-258
3-39
6-104
6-104
6-105
IRFD113
IRFD120
IRFD123
IRFD210
IRFD213
6-105
6-106
6-106
6-107
6-107
IRFD220
IRFD223
IRFD9110
IRFD9111
IRFD9112
6-108
6-108
6-109
6-109
6-109
IRFD9120
IRFD9121
IRFD9122
IRFD9123
IRFE110
6-110
6-110
6-110
6-110
6-111
IRFE111
IRFE112
IRFE113
IRFE9120
IRFE9121
6-111
6-111
6-111
6-112
6-112
IRFE9122
IRFE9123
IRFF110
IRFF113
IRFF120
6-112
6-112
6-113
6-113
6-113
IRFF123
IRFF210
IRFF213
IRFF220
IRFF223
6-114
6-114
6-115
6-116
6-116
IRFF230
IRFF233
IRFF330
IRFF333
IRFF430
6-116
6-117
6-117
6-118
6-119
IRFF433
J107
J108
J109
J110
6-119
6-120
6-120
6-120
6-120
J111
J112
J113
J174
J175
6-123
6-123
6-123
6-124
6-124
J176
J177
J201
J202
J203
6-124
6-124
6-125
6-125
6-125
J270
6-126
Data
Sheet
Page #
Motorola
Part #
J271
J300
J304
J305
6-126
6-127
6-128
6-128
J308
J309
J310
JF1033B,S,Y
M558-01,-02
6-129
6-129
6-129
6-131
5-38
M559-01,-02
MAD130
MAD1103
MAD1107
MAD1108
5-40
5-42
5-42
5-42
5-42
MAD1109
MBAL99
MBAS16
MBAV70
MBAV74
5-45
3-41
3-42
3-43
3-44
MBAV99
MBAW56
MD708,A,AF,B,BF,F
MD918,A,AF,B
MD982,F
3-45
3-46
5-47
5-48
5-51
MD984
MD985
MD986
MD1120F
MD1121,F
5-52
5-53
5-55
5-56
5-56
MD1122,F
MD1123
MD1130
MD1132,F
MD2218,A,AF,F
5-56
5-58
5-58
5-60
5-61
MD2219,A,AF
MD2369,A,AF,B,BF,F
MD2904,A,AF,F
MD2905,A,AF,F
MD3250,A,AF,F
5-61
5-66
5-69
5-69
5-74
MD3251,A,AF,F
MD3409
MD3410
MD3467
MD3725,F
5-74
5-78
5-78
5-79
5-83
MD3762,F
MD4260
MD4261
MD5000,A,B
MD6001,F
5-86
5-89
5-89
5-90
5-91
MD6002,F
MD6003
MD7000
MD7001,F
MD7002,A,B
5-91
5-91
5-95
5-96
5-98
MD7003,A,AF,B
MD7007,A,B,BF,F
5-99
5-101
Devices with no page number shown are available from Motorola although not represented In this book Please contact your nearest Motorola
representative for further information
viii
\
\
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
MD7021,F
MD8001
MD8002
5-103
5-105
5-105
MDSOO3
MFE120
MFE121
MFE122
MFE130
5-105
6-132
6-132
6-132
6-136
MFE131
MFE132
MFE140
MFE823
MFE825
6-136
6-136
6-139
6-144
6-145
MFE910
MFE930
MFE960
MFE990
MFE2004
6-146
6-148
6-148
6-148
6-151
MFE2005
MFE2006
MFE2010
MFE2011
. MFE2012
6-151
6-151
6-153
6-153
6-153
MFE9200
MFQ930C
MFQ960C
MFQ990C
MHQ918
6-155
6-158
6-158
6-158
5-106
MHQ2222
MHQ2369
MHQ2906
MHQ3467
MHQ3546
5-107
5-109
5-110
5-112
5-113
MHQ3798
MHQ4002A
MHQ4013
MHQ4014
MHQ6001
MHQ6002
MM1748A
MM2005
MM3001
5-114
5-115
5-116
5-116
5-118
5-118
4-264
4-265
4-266
MM3002
MM3003
MM3005
MM3006
MM3007
4-266
4-266
4-267
4-267
4-267
MM3009
MM3903
MM3904
MM3905
4-268
4-269
4-269
4-271
MM3906
MM4000
MM4001
MM4002
MM4003
4-271
4-273
4-273
4-273
4-273
Motorola
Part #
Data
Sheet
Page #
MM4005
MM4036
MM4037
MM4257
MM4258
4-274
4-275·
4-275
4-277
4-277
MM5005
MM5006
MM5007
MM5262
MM5415
4-280
4-280
4-280
4-281
4-282
MM5416
MM6427
MMAD130
MMAD1103
MMAD1104
4-282
4-283
3-47
3-47
3-47
MMAD1105
MMAD1106
MMAD1107
MMAD1108
MMAD1109
3-47
3-47
3-47
3-49
3-47
MMBA811 C5,C6,C7,C8
MMBA812M3,M4,M5,M6,M7
MMBC1009F1,F3
MMBC1321 Q3,Q4,Q5
MMBC1622D6,D7
3-50
3-51
3-52
3-53
3-54
MMBC1623L3,L4,L5,L6,L7
MMBC1653N2,N3,N4
MMBC1654N5,N6,N7
MMBD101
MMBD201
3-55
3-56
3-57
3-58
3-59
MMBD301
MMBD352
MMBD353
MMBD501
MMBD701
3-59
3-60
3-60
3-59
3-59
MMBD914X
MMBD2835X
MMBD2836X
MMBD2837X
MMBD2838X
3-61
3-62
3-62
3-63
3-63
MMBD6050X
MMBD6100
MMBD7000
MMBF170
MMBF4391
3-64
3-65
3-66
3-67
3-68
MMBF4392
MMBF4393
MMBF4416
MMBF4860
MMBF5457
3-68
3-68
3-69
3-70
3-72
MMBF5459
MMBF5460
MMBF5484
MMBF5486
MMBFJ310
3-73
3-74
3-75
3-76
3-77
Devices with no page number shown are available from Motorola although not represented," this book Please contact your nearest Motorola
representative for further information
ix
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
MMBFU310
MMBR536
MMBR901
MMBR920
MMBR930
3-.78
3-.79
.3-82
3-83
3-84
MMBR931
MMBR2060
MMBR2857
MMBR4957
MMBR5031
3-85
3-86
3-87
3-88
3-89
MMBR5179
MMBS5060
MMBS5061
MMBS5062
MMBT404,A
3-90
3-91
3-91
3-91
3-92
MMBT918
MMBT930
MMBT2222,A
MMBT2369
MMBT2484
3-94
3-96
3-97
3-99
3-100
MMBT2907,A
MMBT3640
MMBT3903
MMBT3904
MMBT3906
3-101
3-103
3-104
3-104
3-106
MMBT4124
MMBT4125
MMBT4401
MMBT4403
MMBT5086
3-108
3-109
3-110
3-111
3-112
MMBT5087
MMBT5088
MMBT5089
MMBT5401
MMBT5550
3-112
3-113
3-113
3-114
3-115
MMBT5551
MMBT6427
MMBT6428
MMBT6429
MMBT6517
3-115
3-116
3-11.7
3-11.7
3-118
MMBT6520
MMBT8598
MMBT8599
MMBTA05
MMBTA06
3-119
3-120
3"120
3-121
3-121
MMBTA13
MMBTA14
MMBTA20
MMBTA42
MMBTA43
3-122
3-122
3-123
3-124
3-124
MMBTA55
MMBTA56
MMBTA63
MMBTA64
MMBTA70
3-125
3-125
3-126
3-126
3-127
MMBTA92
3-128
Motorola
Part #
MMBTA93
MMBTH10
MMBTH24
3-128
3-129
3-130
MMBTH81
MMBV105G
MMBV109
MMBV409,L
MMBV432L
3-131
3-132
3-133
3-134
3-136
MMBV2101
MMBV2102
MMBV2103
MMBV2104
MMBV2105
3-138
3-138
3-138
3-138
3-138
MMBV2106
MMBV2107
MMBV2108
MMBV2109
MMBV3102
3-138
3-138
3-138
3-138
3-139
MMBV3401
MMBV3700
MMBZ5226B
MMBZ5227B
MMBZ5228B
3-140
3-141
3-143
3-143
3-143
MMBZ5229B
MMBZ5230B
MMBZ5231B
MMBZ5232B
MMBZ5233B
3-143
3-143
3-143
3-143
3-143
MMBZ5234B
MMBZ5235B
MMBZ5236B
MMBZ5237B
MMBZ5238B
3-143
3-143
3-143
3-143
3-143
MMBZ5239B
MMBZ5240B
MMBZ5241B
MMBZ5242B
MMBZ5243B
3-143
3-143
3-143
3-143
3-143
MMBZ5244B
MMBZ5245B
MMBZ5246B
MMBZ5247B
MMBZ5248B
3-143
3-143
3-143
3-143
3-143
MMBZ5249B
MMBZ5250B
MMBZ5251B
MMBZ5252B
MMBZ5253B
3-143
3-143
3-143
3-143
3-143
MMBZ5254B
MMBZ5255B
MMBZ5256B
MMBZ5257B
MMPQ2222,A
3-143
3-143
3-143
3-143
3-144
MMPQ2369
MMPQ2907,A
MMPQ3467
3-146
3-147
3-149
Devices with no page number shown are available from Motorola although not represented
representative for further information
x
. Data
Sheet
Page #
In
this book Please contact your nearest Motorola
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
MMPQ3725,A
MMPQ3762
3-150
MMPQ3904
MMPQ3906
MMPQ6700
MMPQ6842
MPF89
3-152
3-153
3-154
3-155
6-159
MPF102
MPF256
MPF820
MPF910
MPF930
6-160
6-161
6-162
6-146
6-164
MPF960
MPF970
MPF971
MPF990
MPF3330
6-164
6-165
6-165
6-164
6-169
MPF3821
MPF3822
MPF3970
MPF3972
MPF4118,A
6-170
6-170
6-171
6-171
6-173
MPF4150
MPF4221
MPF4222A
MPF4223
MPF4224
6-175
6-176
6-176
6-177
6-177
MPF4391
MPF4392
MPF4393
MPF4856,A
MPF4857,A
6-178
6-178
6-178
6-182
6-182
MPF4858,A
MPF4859,A
MPF4860,A
MPF4861,A
MPF6659
6-182
6-182
6-182
6-182
6-57
MPF6660
MPF6661
MPQ918
MPQ1000
MPQ1500
6-57
6-57
5-119
Motorola
Part #
3-151
5-120
5-121
MPQ2221
MPQ2222
MPQ2369
MPQ2483
MPQ2484
5-107
5-107
5-109
MPQ2906
MPQ2907
MPQ3303
MPQ3467
MPQ3546
5-110
5-110
MPQ3725,A
MPQ3762
MPQ3798
MPQ3799
5-126
5-128
5-122
5-122
5-124
5-125
5-113
5-130
5-130
Data
Sheet
Page #
MPQ3904
5-132
MPQ3906
MPQ6001
MPQ6002
MPQ6100,A
MPQ6426
5-133
5-135
5-135
5-138
5-140
MPQ6427
MPQ6501
MPQ6502
MPQ6600,A
MPQ6700
5-140
5-135
5-135
5-138
5-142
MPQ6842
MPQ7041
MPQ7042
MPQ7043
MPQ7091
5-146
5-149
5-149
5-149
5-150
MPQ7092
MPQ7093
MPS536
MPS650
MPS651
5-150
5-150
2-165
2-168
2-168
MPS750
MPS751
MPS918
MPS929
MPS930A
2-168
2-168
2-171
2-173
2-173
MPS2222,A
MPS2369
MPS2907,A
MPS3390
MPS3391
2-176
2-180
2-182
2-186
2-186
MPS3396
MPS3397
MPS3398
MPS3403
MPS3563
2-186
2-186
2-196
2-187
2-171
MPS3566
MPS3567
MPS3568
MPS3569
MPS3638,A
2-188
2-189
2-189
2-189
2-190
MPS3640
MPS3646
MPS3702
MPS3703
MPS3704
2-192
2-194
2-196
2-196
2-197
MPS3705
MPS3866
MPS3903
MPS3904
MPS3906
2-197
2-198
2-200
2-200
2-206
MPS4123
MPS4124
MPS4125
MPS4126
MPS4249
2-208
2-208
2"209
2-209
2-210
Devices with no page number shown are available from Motorola although not represented In this book Please contact your nearest Motorola
representative for further information
xi
ALPHANUMERIC INDEX (continued)
Motorola
Part #
Data
Sheet
Page #
Motorola
Part #
Data
Sheet
Page #
MPS4250,A
MPS4258
MPS5172
MPS5179
MPS6507
2-210
2-212
2-214
2-215
2-217
MPSA16
MPSA17
MPSA18
MPSA20
MPSA25
2-253
2-253
2-255
2-258
2-260
MPS6512
MPS6513
MPS6514
MPS6515
MPS6516
2-218
2-218
2-218
2-218
2-218
MPSA26
MPSA27
MPSA28
MPSA29
MPSA42
2-260
2-260
2-262
2-262
2-264
MPS6517
MPS6518
MPS6519
MPS6520
MPS6521
2-218
2-218
2-218
2-219
2-219
MPSA43
MPSA44
MPSA45
MPSA55
MPSA56
2-264
2-266
2-266
2-246
2-246
MPS6523
MPS6530
MPS6531
MPS6534
MPS6544
2-219
2-220
2-220
2-221
2-222
MPSA62
MPSA63
MPSA64
MPSA70
MPSA75
2-269
2-269
2-269
2-270
2-271
MPS6560
MPS6562
MPS6568A
MPS6569A
MPS6570A
2-223
2-223
2-224
2-224
2-224
MPSA77
MPSA92
MPSA93
MPSD55
MPSD6100
2-271
2-273
2-273
2-275
2-326
MPS6571
MPS6576
MPS6601
MPS6602
MPS6651
2-226
2-227
2-228
2-228
2-228
MPSH04
MPSH07
MPSH10
MPSH11
MPSH17
2-276
2-277
2-280
2-280
2-283
MPS6652
MPS6714
MPS6715
MPS6716
MPS6717
2-228
2-233
2-233
2-234
2-234
MPSH20
MPSH24
MPSH30
MPSH32
MPSH34
2-284
2-287
2-290
2-291
2-294
MPS6724
MPS6725
MPS6726
MPS6727
MPS6728
2-235
2-235
2-236
2-236
2-237
MPSH54
MPSH55
MPSH81
MPSL01
MPSL51
2-295
2-295
2-296
2-298
2-299
MPS6729
MPS6733
MPS6734
MPS6735
MPS8093
2-237
2-238
2-238
2-238
2-239
MPSW01,A
MPSW05
MPSW06
MPSW10
MPSW13
2-300
2-303
2-303
2-306
2-307
MPS8097
MPS8098
MPS8099
MPS8598
MPS8599
2-240
2-241
2-241
2-241
2-241
MPSW14
MPSW42
MPSW43
MPSW45
MPSW51,A
2-307
2-310
2-310
2-313
2-314
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
2-246
2-246
2-251
2-252
2-252
MPSW55
MPSW56
MPSW63
MPSW64
MPSW92
2-317
2-317
2-320
2-320
2-323
MPSW93
2-323
,
Devices with no page number shown are available from Motorola although not represented
representative for further information
xii
In
this book Please contact your nearest Motorola
ALPHANUMERIC INDEX (continued)
Motorola
Part #
MQ982
MQ1120
MQ1129
MQ2218,A
MQ2219,A
MQ2369
MQ2904
MQ2905A
MQ3251
MQ3467
MQ3725
MQ3762
MQ6001
MQ6002
MQ7001
MQ7003
MQ7007
MQ7021
MSD6102
MSD6150
MV409
P2N2222,A
P2N2907,A
P2N3019
P2N4033
PBF259,S
PBF259R,RS
PBF493,S
PBF493R,RS
U308
U309
U310
VN10LM
VN0610LL
VN2222LL
Data
Sheet
Page #
Motorola
Part #
Data
Sheet
Page #
5-51
5-56
5-152
5-61
5-61
5-66
5-69
5-69
5-74
5-81
5-85
5-88
5-93
5-93
5-98
5-99
5-101
5-103
2-327
2-328
3-134
2-333
2-335
2-337
2-340
2-329
2-330
2-331
2-332
6-184
6-184
6-184
6-188
6-189
6-190
Devices with no page number shown are available from Motorola although not represented
representative for further information
xiii
In
this book Please contact your nearest Motorola
Selector Guides •
FIELD-EFFECT TRANSISTORS
JFETs
Low-Frequency/Low-Noise ......
High-Frequency Amplifiers ......
Switches and Choppers ........
MOSFETs
Dual Gate MOSFETs .........
Low-Frequency/Low-Noise ......
TMOS Switches and Choppers ...
The following selector guides highlight semiconductors
that are the most popular and have a history of high usage
for the most applications.
These selector guides cover a wide range of small signal
plastic and metal can semiconductors.
A large selection of encapsulated plastic transistors, FETs
and diodes are available for surface mount and insertion
assembly technology. Plastic packages include TO-226AA,
TO-226AE 1 Watt and SOT-23. Plastic multiples are available
in 14-pin and 16-pin dual-in-line packages for insertion applications: SO-8, SO-14 and SO-16 for surface mount
applications.
Metal can and ceramic packages are available for applications requiring higher power dissipation or having hermetic requirements. TO-18, TO-205AD, T0-46, TO-52 and
TO-72 packages contain discrete devices. There is a variety
of ceramic dip and flatpacks available for multiple transistors, FETs and diodes.
Devices which are JAN, JANTX, JTXV or CECC qualified
are noted in the individual selector guides or in the Hi-Rei
and Military Section of this selector guide.
MULTIPLE DEVICES
Bipolar
Quads ...................
Duals ....................
Surface Mount Multiples
Quad Transistors ............
FETs
TMOS Quads ..............
Diode Array and Dual Diodes
Diode Arrays ...............
Dual Diodes ...............
Table
Page
1 ........ 1-2
2 . . . . . . ..
3 . . . . . . ..
4 . . . . . . ..
5 ........
6 . . . . . . ..
7 . . . . . . ..
8 . . . . . . ..
9 . . . . . . ..
10
11
12
13
14
1-3
1-3
1-4
1-4
1-5
1-6
1-6
1-6
1-7
1-7
1-7
1-8
1-8
15
16
1-9
1-12
17
1-12
18
19
20
1-13
1-14
1-15
Page
. 1
. 2
. 3
1-16
1-17
1-18
. 4
. 5
. 6
1-20
1-20
1-21
. 1
. 2
1-25
1-26
. 3
1-29
. 4
1-30
. 5
. 6
1-30
1-31
SURFACE MOUNT
SOT-23 Bipolar Transistors
General-Purpose . . . . . . . . . . . .. 1 . . . . . . ..
Switching . . . . . . . . . . . . . . . . . . 2 . . . . . . ..
VHF/UHF Amplifiers, Mixers,
Oscillators . . . . . . . . . . . . . . . . 3 . . . . . . ..
Choppers . . . . . . . . . . . . . . . . . . 4 ...... "
Darlingtons . . . . . . . . . . . . . . . . . 5 ...... "
Low-Noise. . . . . . . . . . . . . . . . . . 6 . . . . . . ..
High-Voltage ................ 7 ........
Drivers.. .. .. .. .. .. .. .. .... 8 .. .. ....
RF Transistors ............... 9 ........
SOT-23 Field-Effect Transistors (JFETs)
RF JFETs .................. 10
General-Purpose FETs . . . . . . . .. 11
Chopper/Switches, JFETs ....... 12
TMOS FETs ................ 13
SOT-23 Switching Diodes
General-Purpose ............. 14
Mixer and Detector. . . . . . . . . . .. 15
Zener Diodes. . . . . . . . . . . . . . . . 16
Tuning Diodes ............... 17
Thyristors . . . . . . . . . . . . . . . . .. 18
Table of Contents
BIPOLAR DEVICES
Plastic-Encapsulated
General-Purpose Amplifiers ......
Low-Noise and Good hFE
Linearity . . . . . . . . . . . . . . . . .
Darlingtons . . . . . . . . . . . . . . . . .
High-Current Amplifiers. . . . . . . . .
High-Voltage Amplifiers .........
RF Small-Signal. . . . . . . . . . . . . .
High-Speed Saturated Switching. . .
Choppers . . . . . . . . . . . . . . . . . .
Industrial. . . . . . . . . . . . . . . . . . .
Telecoms ..................
Central Collector 800 mW . . . . . . .
TO-226AE - 1 Watt High-Current.
Dual Diodes . . . . . . . . . . . . . . ..
Voltage Reference ............
Metal Packages
General-Purpose Amplifiers ......
High-Gain/Low-Noise ..........
High-Voltage/High-Current
Amplifiers .................
High-Frequency Amplifiersl
Oscillators ................
Switching ..................
Choppers . . . . . . . . . . . . . . . . . .
Table
1-32
1-34
1-34
1-34
1-35
1-35
1-35
1-36
1-36
1-37
1-37
1-37
1-37
1-38
1-38
1-39
1-40
1-41
DEVICES FOR HI-REL AND MILITARY APPLICATIONS
JAN, JANTX, JANTXV, and JANS
Switching and High-Frequency
Transistors. . . . . . . . . . . . . . .. 1 . . . . . . .. 1-42
Multiple Devices .............. 2 ........ 1-42
Field-Effect Transistors . . . . . . . . . 3 . . . . . . .. 1-42
CECC
Qualified Types .............. 4 ........ 1-42
1-1
•
Bipolar Devices
Plastic-Encapsulated
3
CASE 29-03
TO-226AE
(1 WATT TO-92)
Motorola's small-signal TO-226 plastic transistors encompass hundreds of devices with a wide variety of characteristics for general purpose, amplifier and switching applications. The popular high-volume package combines
proven reliability, performance, economy and convenience
to provide the perfect solution for industrial and consumer
design problems. All devices are laser marked for ease of
identification and shipped in antistatic containers, as part
of Motorola's ongoing practice of maintaining the highest
standards of quality and reliability.
In addition to the standard devices listed in the following
tables, Motorola also offers special electrical selections of
CASE 29-04
TO-226M
(TO-92)
CASE 182-02
TO-226AC
these devices. -Please contact your Motorola Sales Representative regarding any special requirements you may have.
In each of the following tables, the major specifications
of the transistors or diodes are given for easy comparison.
All transistors are available in the radial or axial tape and
reel formats. Lead forming to fit TO-5 or TO-18 sockets is
also available.
TABLE 1. General-Purpose Amplifier Transistors
The general-purpose transistors are designed for small-signal amplification from dc to low radio frequencies. They are also useful as
oscillators and general purpose switches.
fT@le
MHZ
hFE@le
Min
rnA
150
100
150
150
150
150
100
75
200
150
150
150
150
150
150
250
300
250
250
200
125
75
390'
250
250
100
330'
300'
300'
300'
300
300
480'
10
10
10
10
10
10
10
50
10
10
10
10
10
10
10
10
10
20
10
20
5
50
50
20
10
50
10
10
10
10
10
10
10
10
5
10
50
10
Min
Max
rnA
100
50
120
120
180
100
50
40
120
120
180
120
120
180
380
110
100
100
50
50
40
40
10
100
50
100
90
120
120
180
380
120
150
250
100
50
30
120
300
1
100
2
2
2
1
100
2000
2
2
2
2
2
2
2
2
10
150
100
150
5
2000
100
150
2
50
2
2
2
2
2
2
2
2
10
600
1000
2
TO-226AA
MPS8099
MPSA06
BC546
BC546A
BC546B
MPS8098
MPSA05
MPS651
BC182
BC237
BC239
BC547
BC547A
BC547B
BC547C
BC317
2N3904
2N4401
2N3903
2N4400
MPSA20
MPS650
MPS6531
MPS2222
2N4123
MPS3704
MPS6513
BC548
BC548A
BC546B
BC546C
2N4124
MPS6514
MPS6515
MPS5172
MPS6560
MPS6601
BC238
MPS8599
MPSA56
BC556
BC556A
BC556B
MPS8598
MPSA55
MPS751
BC212
BC307
BC309
BC557
BC557A
BC557B
BC557C
BC320
2N3906
2N4403
2N3905
2N4402
MPSA70
MPS750
MPS6534
MPS2907
2N4125
MPS3702
MPS6517
BC558
BC558A
BC558B
BC558C
2N4126
MPS6518
MPS6519
MPS6562
MPS6551
BC308
EBC
EBC
CBE
CBE
CBE
EBC
EBC
EBC
CBE
CBE
CBE
CBE
CBE
CBE
CBE
CBE
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
CBE
CBE
CBE
CBE
EBC
EBC
ESC
EBC
EBC
EBC
CBE
80
80
65
65
65
60
60
60
50
45
45
45
45
45
45
45
40
40
40
40
40
40
40
30
30
30
30
30
30
30
30
25
25
25
25
25
25
25
480
120'
60
100
150
200
50
100
100
100
200
500
2000 100
100
100
100
100
100
100
150
200
600
200
600
100
2000
600
600
200
600
100
100
100
100
100
200
100
100
100
500
1000
100
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-2
450
220
450
300
-
-
460
460
800
450
220
450
800
450
300
300
150
150
400
120
300
150
300
180
300
220
450
800
360
300
500
500
200
150
800
-
10
10
10
-
10
10
10
10
10
10
10
10
5
6
-
-
10
10
10
10
-
10
BIPOLAR DEVICES -
PLASTIC-ENCAPSULATED (continued)
TABLE 2. Low-Noise and Good hFE Linearity
These devices are designed to use on applications where good hFE linearity and low noise characteristics are required: Instrumentation,
Hi-Fi Preamplifier.
Min
Max
TO-226AA
-
-
-
BC239
BC414
BC550
BC550B
BC550C
BC651
MPSA18
-
MPS4249
2N5087
MPS425A
2N5086
BC309
BC416
BC560
BC560B
BC560C
MPS4250
BC415
BC559
BC559B
BC459C
BC413
BC549
BC549B
BC459C
BC650
2N4123
2N5088
2N4124
2N5089
-
-
MPS6523
2N4125
2N4126
-
EBC
EBC
EBC
EBC
CBE
CBE
CBE
CBE
CBE
EBC
EBC
EBC
CBE
CBE
CBE
CBE
EBC
EBC
EBC
EBC
EBC
EBC
60
60
60
50
45
45
45
45
45
45
45
-
100
250
250
150
120
180
180
180
380
380
500
250
180
180
180
380
380
50
350
120
450
300
40
30
30
30
30
30
30
30
25
25
25
-
10
10
10
10
2
2
2
2
2
2
2
10
2
2
2
2
2
2
2
2
2
2
800
800
800
460
800
1400
800
800
800
800
1400
150
360
-
9.5
8
8
8
8
3
2
2
3
2
2.5
2.5
2.5
2.5
-
-
7
-
8
8
8
8
2
2.5
2.5
2.5
2.5
-
-
-
100
40
250
40
240
250
250
250
250
300
160
250
250
250
250
250
300
300
150
350
150
340'
6
3
5
2
3
-
-
-
-
1 VT: TOlallnpul NOise Voltage (see BC413/BC414 and BC415/BC416 Data Sheels) al RS ~ 2 kll, IC ~ 200 pA, VCE ~ 5 Volis.
2 NF: Noise Figure al RS ~ 2 k, IC = 200 I'A, VCE ~ 5 Valls. f = 30 Hz 10 15 kHz.
3AI VCE ~ 1 V.
• "S" version.
(§)@ 1 kHz.
TABLE 3. Darlington Transistors
Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have
monolithic construction.
Min
Max
TO-226AA
-
MPSA29
BC372
MPSA28
BC373
MPSA27
BC618
MPSA26
MPSA25
BC617
2N6427
2N6426
MPSA14
MPSA13
BC517
-
MPSA12
MPSD54
MPSA62
-
MPSA77
MPSA76
MPSA75
MPSA64
MPSA63
EBC
EBC
EBC
EBC
EBC
CBE
EBC
EBC
CBE
EBC
EBC
EBC
EBC
CBE
EBC
EBC
100
100
80
80
60
55
50
40
40
40
40
30
30
30
25
20
500
1000
500
1000
500
1000
500
500
1000
500
500
500
500
400
300
500
10K
25K
10K
25K
10K
10K
10K
10K
20K
20K
30K
20K
10K
30K
1K
20K
EBC
EBC
EBC
EBC
EBC
50
40
40
30
30
1000
1000
1000
1000
1000
25K
25K
25K
20K
10K
-
1.5
1.5
1.5
1.5
1
1
1
100
250
100
250
100
200
100
100
200
500
500
100
100
100
100
10
0.1
0.25
0.1
0.25
0.1
0.2
0.1
0.1
0.2
0.5
0.5
0.1
0.1
0.1
0.1
0.Q1
125
100
125
100
125
150
125
125
150
125
125
125
125
125
100
125
1.5
1.5
1.5
1.5
1.5
1000
1000
1000
100
100
2
2
2
0.1
0.1
100
100
100
125
125
1.4
1
1.4
1
1.5
1.1
1.5
1.5
-
100
100
100
100
100
200
100
100
200
100
100
100
100
20
100
10
-
200
200
200
100
100
160K
160K
50K
-
-
70K
200K
300K
-
-
-
1.1
10
100
10
100
10
500
10
10
500
10
10
10
10
10
10
10
TO-226AE (1 WATn
MPSW6725
MPSW6724
MPSW45
MPSW14
MPSW13
MPSW64
MPSW63
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-3
200
200
200
10
10
•
•
BIPOLAR DEVICES -
PLASTIC·ENCAPSULATED (continued)
TABLE 4. High·Current Amplifier Transistors
Useful in Low Power Audio Output Stages and Medium Current Switches.
hFE
Min
Max
100
100
70
70
70
60
60
60
50
50
75
60
60
75
40
600
600
TO-226AA
BC337
BC338
BC445
BC447
BC449
BC485
BC487
BC489
MPSA05
MPS~06
MPS8099
2N4409
2N441 0
MPS6SO
BC327
BC328
BC446
BC446
BC450
BC486
BC488
BC490
MPSA55
MPSA56
MPS8599
-
MPS750
CBE
CBE
CBE
CBE
CBE
CBE
CBE
CBE
EBC
EBC
EBC
EBC
EBC
EBC
45
25
60
80
100
45
60
80
60
80
80
50
80
40
625
625
625
625
625
625
625
625
625
625
625
625
625
625
800
800
300
300
300
1000
1000
1000
SOO
500
SOO
250
250
2000
-
-
400
400
400
400
400
-
-
100
100
10
10
10
100
100
100
100
100
100
10
10
1000
2000
1
1
5
5
5
2
2
2
1
1
5
1
1
2
2
210
210
250/200 1
250/200 1
250/200 1
200/150 1
200/150 1
200/150 1
15011751
150/175 1
200 1
200
200
100
1Relevant to PNP.
TABLE 5. High·Voltage Amplifier Transistors
These high-voltage transistors are designed for driving neon bulbs and Nixie'" indicator tubes, for direct line operation, and for other
applications requiring high-voltage capability at relatively low collector current. These devices are listed in order of decreasing breakdown
voltage (V(BR)CEO)'
BF844
MPSA44
BF845
MPSA45
2N6517
BF393
MPSA42
2N6517
BF392
2N6515
BF391
MPSA43
2N5551
2N5550
MPSLOI
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
400
400
350
3SO
350
300
300
300
250
250
200
200
160
140
100
0.5
0.3
0.5
0.3
0.. 5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.15
40
40
40
50
30
40
40
45
40
50
40
40
80
60
20
30
100
30
100
30
10
30
30
10
30
10
10
10
10
30
0.5
0.75
0.5
0.75
0.2
0.2
0.5
0.3
0.2
0.3
0.2
0.4
0.15
0.15
0.2
10
10
50
10
20
20
10
20
10
20
20
10
10
10
1
5
1
5
1
2
2
1
2
1
2
2
1
1
1
0.5
0.3
0.3
0.3
0.5
0.3
0.3
0.3
40
40
40
40
200
40
50
40
25
10
30
30
50
10
30
10
2
2
0.75
0.5
2
2
0.4
2
20
20
30
20
20
20
20
20
2
2
3
2
2
2
2
2
so
50
20
50
20
40
50
50
40
50
40
50
50
100
100
40
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
NPN - TO-226AE (1 WATT)
BDCOS
MPS6735
MPSW10
MPSW42
BDC07
MPS6734
MPSW43
MPS6733
ECB
EBC
EBC
EBC
ECB
EBC
EBC
EBC
300
300
300
300
250
250
200
200
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-4
60
50
45
so
60
50
50
50
10
10
10
10
10
10
10
10
BIPOLAR DEVICES -
•
PLASTIC-ENCAPSULATED (continued)
TABLE 5. High-Voltage Amplifier Transistors (continued)
PNP - TO-22SAA
BF493S
2N6520
BF493
MPSA92
2N6519
BF492
BF491
MPSA93
2N5401
2N54oo
MPSL51
PNP -
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
350
350
350
300
300
250
200
200
150
120
100
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.6
40
30
40
40
45
40
40
40
60
40
40
10
30
10
10
30
10
10
10
10
10
50
20
3
0.2
0.5
0.3
0.2
0.2
0.4
0.2
0.2
0.25
20
10
20
20
10
20
20
20
10
10
10
2
1
2
2
1
2
2
2
1
1
1
50
40
50
50
40
50
50
50
100
100
50
10
10
10
10
10
10
10
10
10
10
10
0.5
0.5
0.3
0.5
0.3
40
25
25
40
25
25
30
30
25
30
2
0.75
0.5
2
0.5
20
20
20
20
2
2
2
2
2
60
60
50
60
50
10
10
10
10
10
TO-22SAE (1 WATT)
BDC06
MPSW60
MPSW92
BDC08
MPSW93
ECB
EBC
EBC
ECB
EBC
300
300
300
250
200
20
TABLE 6. RF Transistors
The RF transistors are designed for Small Signal amplification from RF to VHF/UHF frequencies. They are also used as mixers and
oscillators in the same frequency ranges. Several types are AGe characterized. The transistors are listed in order of decreasing iT
Min.
NPN - TO-22SAA
BF373
BF241
BF240
BF224
MPSH32
MPSH24
MPSH20
MPSH07
MPS3866
BF371
MPSH11
MPSH10
BF375
BF374
BF199
MPSH30
BF959
BF254
MPSH17
MPS918
MPS5179
MPS3563
MPSH04
BEC
CEB
CEB
CEB
BEC
BEC
BEC
EBC
EBC
BEC
BEC
BEC
BEC
BEC
CEB
BEC
CEB
CEB
BEC
EBC
EBC
EBC
EBC
45
40
40
30
30
30
30
30
30
30
25
25
25
25
25
20
20
20
15
15
12
12
10
100
25
25
50
30
100
100
25
400
100
25
100
100
100
100
50
100
100
100
50
50
50
30
80
100
100
50
50
50
65
30
27
30
25
20
10
38
60
60
35
70
40
20
40
65
25
20
25
20
30
7
1
1
7
4
8
4
3
50
7
4
4
1
1
7
4
20
1
5
8
3
8
1.5
10
10
10
10
5
10
10
10
5
10
10
10
10
10
10
5
10
10
10
10
1
10
10
720
470
600
600
300"
400"
400"
400"
500"
720
660"
1500
800
800
750
300"
800
260
1600
BOO
2000
800
80"
30
30
20
20
60
1.5
1.5
3
2
5
10
10
10
10
10
80
80
600
300"
700
38
35
0.32
0.34
0.34
0.28#
0.36
0.3
0.23#
0.7
0.6
0.6
0.35
0.65#
0.9#
0.9
1.7
1.7
-
2.5
2.5
2.5
3.3"
-
4
4
2.5
6"
3
1.7
6"
6"
4.5"
6"
2"
-
100
100
100
45
-
-
100
100
35
100
200
1
200
60
200
60
1
PNP - TO-22SAA
MPSH55
MPSH55
BF506
2N5208
MPSH81
BEC
BEC
CBE
BEC
BEC
80
35
25
20
• Max
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-5
-
0.25
0.85
-
-
4
3"
200
100
-
-
•
BIPOLAR DEVICES -
PLASTIC-ENCAPSULATED (continued)
TABLE 7. High-Speed Saturated Switching Transistors
The transistors listed in this table are specially optimized for high-speed saturated switches. They are heavily gold doped and processed
to provide very short switching times and low output capacitance (below 6 pF). The transistors are listed in order of decreasing turnon time (Ion).
2N3904
2N3903
2N4400
2N4264
2N4265
MPS3646
MPS2369
PNP -
70
70
35
25
25
18
12
250
225
255
35
35
28
18
10
10
150
10
10
300
10
40
40
40
15
12
15
15
100
50
50
835'
250
225
255
35
20
20
10
10
10
150
50
10
10
25 1
40
40
40
12
12
15
30
100
100
50
30
40
100
30
40
10
10
150
10
10
30
10
0.2
0.2
0.4
0.22
0.22
0.2
0.25
10
10
150
10
10
30
10
1
1
15
1
1
3
1
12
10
10
150
10
50
10
0.2
0.25
0.25
0.4
0.2
0.15
0.18
24
10
10
150
10 .
10
10
1
1
1
15
1
1
1
300
250
200
300
300
350
500
10
10
20
10
10
30
10
TO-226AA
MPS404A
2N3906
2N3905
2N4402
MPS3640
MPS4258
2N5771
223'
70
70
35
25
15
15
30
50
250
200
150
500
700
850
-
10
10
20
10
10
10
'V(BR)EBO
'Typ
TABLE 8. Choppers
Devices are listed in decreasing (V(BR)EBO)
PNP -
TO·226AA
TABLE 9. Industrial Transistors
These devices are special products ranges intended for use in applications which require well specified high performing devices like
high quality amplifier differential input. driver stage.
hFE
Min
Max
TO·226AA
BCX59
MPS2222A
MPS6531
BCX58
MPS2222
MPS6532
MPS2907A. EBC
BCX79
CBE
EBC
MPS2907
EBC
MPS6534
EBC
BCX78
CBE
EBC
MPS6535
EBC
60
45
40
40
40
32
30
30
600
200
600
600
600
200
600
600
100
120
75
75
90
120
75
30
630
270
630
-
10
2
10
10
100
2
10
100
10
5
10
10
1
5
10
1
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-6
200'
250
300'
200'
250
250
250'
250
-
2
45
75
30
45
30
75
-
30
2
-
-
-
30
100
600/350
270
100
250
600/350
270
250
BIPOLAR DEVICES -
PLASTIC-ENCAPSULATED (continued)
TABLE 10. Telecom Transistors
These devices are special product ranges intended for use in Telecom application which require an excellent long term reliability.
Device
Type
NPN - TO-226AA
P2N2222
P2N2222A
(1 )PBF259,S
(1 )PBF259R,RS
CBE
CBE
EBC
CBE
30
40
300
300
625
625
625
625
600
600
500
500
75
75
25
25
CBE
CBE
EBC
CBE
40
60
300
300
625
625
625
625
600
600
500
500
75
100
40
40
-
10
10
1
1
10
10
10
10
-
10
10
1
1
10
10
10
10
-
250
300
40
40
PNP - TQ-226AA
P2N2907
P2N2907A
(2)PBF493,S
(2)PBF493R,RS
-
200
200
40
40
(1) "S" version, hFE Min 60@ IC ~ 20 rnA, VCE ~ 10 V.
(2) "S" version, hFE Min 40 @ IC ~ 0,1 rnA, vCE = 1 V.
TABLE 11. Central Collector 800 mW
The transistors listed in this table have been designed to provide power dissipation. These devices are listed in order of decreasing
breakdown voltage (V(BR)CEO).
BF420
BF422
BC639
BC637
BC635
BC368
ECB
ECB
ECB
ECB
ECB
ECB
300
250
80
60
45
20
0.1
0.1
1
1
1
1
40
50
40
40
40
60
25
25
150
150
150
1000
2
2
0.5
0.5
0.5
0.5
20
20
500
500
500
1000
2
2
50
50
50
100
60
60
60
60
60
65
10
10
10
10
10
10
0.1
0.1
1
1
1
1
40
50
40
40
40
60
25
25
150
150
150
1000
2
2
0.5
0.5
0.5
0.5
20
20
500
500
500
1000
2
2
50
50
50
100
60
60
60
60
60
65
10
10
10
10
10
10
1000
1000
1000
1000
250
250
1000
1000
250
250
1000
1000
1000
1000
1000
1000
100
100
100
100
10
10
100
100
10
10
100
100
100
100
100
100
PNP - TO-226AA
BF421
BF423
BC640
BC639
BC636
BC369
ECB
ECB
ECB
ECB
ECB
ECB
300
250
80
60
45
20
TABLE 12. TO-226AE -1 Watt High-Current
BDB01D
BDC01D
BDB01C
BDC01C
MPS6717
MPSW06
BDB01B
BDC01B
MPSW05
MPS6716
BDB01A
BDC01A
MPS6715
MPSW01A
MPS6714
MPSW01
EBC
ECB
EBC
ECB
EBC
EBC
EBC
ECB
EBC
EBC
EBC
ECB
EBC
EBC
EBC
EBC
100
100
80
80
80
80
60
60
60
60
45
45
40
40
30
30
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
200
200
200
200
200
200
200
200
200
200
200
200
50
50
50
50
1.5
1.5
1.5
1.5
0.5
0.5
1.5
1.5
0.5
0.5
1.5
1.5
1
1
1
1
40
40
40
40
80
50
40
40
80
80
40
40
50
50
50
50
400
400
400
400
-
-
400
400
-
400
400
-
100
100
100
100
50
50
100
100
50
50
100
100
1000
1000
1000
1000
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-7
0.7
0.7
0.7
0.7
0.5
0.4
0.7
0.7
0.4
0.5
0.7
0.7
0.5
0.5
0.5
0.5
•
BIPOLAR DEVICES -
PLASTIC':ENCAPSULATED (continued)
TABLE 12. TO-226AE -1 Watt High-Current (continued)
BDB02D
BDC02D
BDB02C
BDC02C
MPS6729
BDB02B
BDC02B
MPS6728
MPSW55
BDB02A
BDC02A
MPS6727
MPSW51A
MPS6726
MPSWS1
EBC
ECB
EBC
ECB
EBC
EBC
ECB
EBC
EBC
EBC
ECB
EBC
EBC
EBC
EBC
100
100
80
80
80
60
60
60
60
4S
45
40
40
30
30
SO
SO
SO
SO
SO
50
50
50
50
SO
50
50
50
50
50
200
200
200
200
200
200
200
200
200
200
200
50
50
50
50
1.S
1.S
1.S
1.S
o.s
1.5
1.5
0.5
0.5
1.5
1.5
1
1
1
1
40
40
40
40
80
40
40
80
80
400
400
400
400
40
400
400
40
50
50
SO
SO
400
400
-
100
100
100
100
SO
100
100
50
50
100
100
1000
1000
1000
1000
0.7
0.7
0.7
0.7
1000
1000
1000
1000
250
1000
1000
250
250
1000
1000
1000
1000
1000
1000
o.s
0.7
0.7
0.5
0.4
0.7
0.7
o.s
0.5
o.s
O.S
100
100
100
100
10
100
100
10
10
100
100
100
100
100
100
TABLE 13. Dual Diodes
Dual diodes designed for use in low cost biasing, steering and voltage doubler applications including series, common cathode and
common anode diodes.
Description
Switching
Common Cathode
TABLE 14. Voltage Reference Diode
These devices are highly reliable temperature compensated monolithic integrated circuit voltage stabilizer designed for use in television
and FM radios that use variable capacitance diode tuners.
Device
Type
TO·226AC
I
MVS240
62S
23
25
S
-0.2
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-8
S
o
70
•
BIPOLAR DEVICES (continued)
CTO-72
ASE20-j
3 2 1
4
Metal
Motorola small-signal metal can transistors are designed
for use as general-purpose amplifiers, high-speed switches,
high-voltage amplifiers, low-ievei/low-noise amplifiers,
high-frequency oscillators, choppers, and Darlingtons.
These devices are manufactured in a variety of packages,
i.e., TO-1B, TO-205AD, TO-46, TO-52, and TO-72.
A separate listing on page 1-42 indicates those Motorola
small-signal metal can transistors which are qualified to
MIL-19500 high-rei requirements. Devices are available in
the JAN, JANTX, JANTXV, JANS and CECC qualified versions as specified.
CASE 26-03
TO-46
CASE 27-02
TO-52
CASE 79-02
TO-205AD
TABLE 15. General-Purpose Amplifiers
These transistors are designed for dc to VHF amplifier applications, general-purpose switching applications. aAd complementary
circuitry. Devices are listed in decreasing order of V(BR)CEO within each package group.
NPN
TO-18
2N2896
.2N3700#
2N2895
2N2484#
2N956
2N2897
2N930
BC107
BC107A
BC107B
BC107C
BCY59
BCY59-IX
BCY59-VII
BCY59-VIII
BCY59-X
2N2218#
2N2221A#
2N2222A#
2N3946
2N3947
2N718
BCY58
BCY58-IX
BCY58-VII
BCY58-VIII
BCY58-X
2N2222#
2N3302
2N916'
BC108
BC108A
BC108B
BC108C
BC109
BC109A
BC109B
BC109C
BSX51
90
80
65
60
50
45
45
45
45
45
45
45
45
45
45
45
40
40
40
40
40
40
32
32
32
32
32
30
30
25
25
25
25
25
25
25
25
25
25
1000
1000
1000
50
1000
30
200
200
200
200
200
200
200
200
200
800
800
800
200
200
200
200
200
200
200
800
500
100
100
100
100
100
100
100
100
200
120
80
120
15
70
100
30
150
150
150
150
125
125
125
125
125
250
250
300
300
300
50
125
125
125
125
125
250
250
300
150
150
150
150
150
150
150
150
150
50
1.0
50
0.05
50
50
0.5
10
10
10
10
10
10
10
10
10
20
20
20
10
10
50
10
10
10
10
10
20
50
10
10
10
10
10
10
10
10
10
10
60
50
40
100
40
50
100
110
110
200
420
120
250
120
180
380
40
40
100
50
100
40
120
250
120
180
380
100
100
50
110
110
200
420
200
110
200
420
75
#JAN/JANTXlJANTXV available
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-9
200
120
500
120
200
300
450
220
450
800
630
460
220
310
630
120
120
300
150
300
120
630
450
220
310
630
300
300
200
800
220
450
800
800
220
450
BOO
225
150
500
150
0.01
150
150
0.01
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
150
150
10
10
150
2.0
2.0
2.0
2.0
2.0
150
150
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
•
BIPOLAR DEVICES -
METAL (continued)
TABLE 15. General-Purpose Amplifiers (continued)
TO-205AD
-
2N1711
2N3019#
2N302O
BSX47-10
BSX47-16
BSX47-6
BC141
BC141-10
BC141-16
BC141-6
BSX46-10
BSX46-16
BSX46-6
2N1613#
2N2270
2N2219A#
2N3053
2N697
BC140
BC140-10
BC140-16
BC140-6
BSX45-10
BSX45-16
BSX45-6
BFY50
2N2218#
2N2219#
2N3300
BFY51
BFY52
80
80
80
BO
80
BO
60
60
BO
BO
BO
60
60
50
45
40
40
40
40
40
40
40
40
40
40
30
30
30
30
20
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
500
1000
800
700
200
1000
1000
1000
1000
1000
1000
1000
1000
800
BOO
500
1000
1000
-
-
50
50
50
50
50
50
50
60
250
250
250
50
50
50
50
50
50
20
20
20
50
20
20
50
50
50
100
100
40
63
100
40
40
63
100
40
63
100
40
40
50
100
50
40
40
63
100
40
63
100
40
30
40
100
100
40
50
T0-46
2N5581"
2N5582""
40
40
BOO
BOO
250
300
20
20
40
100
120
300
150
150
TO-52
MM3903
MM3904
40
40
200
200
250
300
10
10
50
100
150
300
10
10
TO-1B
2N3963
2N4026
2N4027
2N402B
2N4029
2N2906A#
2N2907A
2N3250A#
2N3251A#
2N3799
2N3964
BC177
BC177A
BC177B
BC177C
BC177VI
BCY71
BCY79-IX
BCY79-VII
BCY79-VIII
BCY79-X
2N2906#
2N2907#
2N3250
2N3251
BCY70
BO
BO
BO
BO
BO
60
BO
60
60
60
45
45
45
45
45·
45
45
45
45
45
45
40
40
40
40
40
200
1000
1000
1000
1000
BOO
BOO
200
200
50
200
200
200
200
200
200
200
200
200
200
200
600
600
200
200
200
40
100
100
150
150
200
200
250
300
30
50
200
200
200
200
200
10
180
180
lBO
180
200
200
250
300
250
0.5
50
50
50
50
50
50
10
10
0.5
0.5
10
10
10
10
10
200
10
10
10
10
50
50
10
10
10
100
15
10
40
25
40
100
50
100
300
250
120
120
lBO
3BO
70
100
250
120
lBO
3BO
40
100
50
100
50
450
1.0
100
100
100
100
150
150
10
10
0.5
1.0
2.0
2.0
2.0
2.0
2.0
10
2.0
2.0
2.0
2.0
150
150
10
10
10
35
70
100
80
50
50
50
50
50
50
50
50
50
50
BO
100
300
100
50
50
50
20
20
20
50
50
50
50
20
20
20
50
50
20
50
300
300
120
160
250
100
400
160
250
100
lBO
250
100
120
200
300
250
120
400
lBO
250
100
lBO
250
100
-
150
150
150
100
100
100
100
100
100
100
100
100
100
150
150
150
150
150
100
100
100
100
100
100
100
150
150
150
150
150
150
~
120
300
300
PNP
""JAN/JANTX available #JAN/JANTXlJANTXV available
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-10
-
120
300
150
300
900
600
460
220
4BO
BOO
140
600
460
220
310
630
120
300
150
300
-
BIPOLAR DEVICES -
I
METAL (continued)
TABLE 15. General-Purpose Amplifiers (continued)
PNP (continued)
TO-18
TO-205AD
TO-4S
TO-52
•JAN ava,lable
BCY78-IX
BCY78-VII
BCY78-VIII
BCY78-X
BC178
BC178A
BC178B
BC178C
BC178VI
BCY72
BC179
BC179-VI
BC179A
BC179B
BC179C
2N869A
32
32
32
32
25
25
25
25
25
25
20
20
20
20
20
18
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
120
180
180
180
180
200
200
200
200
200
250
200
200
200
200
200
400
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
250
120
180
380
120
120
180
380
70
50
180
70
120
180
380
40
MM5007
2N4031
2N4033#
2N4404
2N4405"
BSV17-10
BSV17-6
MM5006
BFx40
BFX41
2N4036
2N4037
MM4036
2N2904A#
2N2905A
2N4030
2N4032
BC161
BC161-10
BC161-16
BC1S1-S
BSV16-10
BSV16-16
BSV16-6
MM5005
2N1131A
2Nl132A
2N2904#
2N2905#
BC160
BC160-10
BC160-16
BC160-6
BSV15-10
BSV15-1S
BSV15-6
MM4037
2N1132
100
80
80
80
80
80
80
80
75
75
65
65
65
60
60
60
60
60
60
60
60
SO
60
60
60
40
40
40
40
40
40
40
40
40
40
40
40
35
2000
1000
1000
1000
1000
1000
1000
2000
1000
1000
1000
1000
1000
600
600
1000
1000
1000
1000
1000
1000
1000
1000
1000
2000
600
600
600
600
1000
1000
1000
1000
1000
1000
1000
1000
600
30
100
150
200
200
50
50
30
100
100
60
60
60
200
200
100
150
50
50
50
50
50
50
50
30
50
SO
200
200
50
50
50
50
50
50
50
60
60
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
10
25
40
100
63
40
50
85
40
40
40
20
40
100
15
40
40
63
100
40
63
100
40
50
30
30
40
100
40
50
50
50
50
2N3485A"
2N3486A"
2N3673
2N3486
SO
SO
50
40
600
600
200
200
200
200
MM390S
MM3905
40
40
200
200
250
200
..JAN/JANTX available
sao
sao
800
140
220
460
800
120
250
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
10
2.0
2.0
2.0
2.0
2.0
30
100
40
50
30
400
160
250
100
1S0
250
100
250
90
90
120
300
400
160
250
100
160
250
100
250
90
250
100
100
150
150
100
100
200
100
100
150
150
150
150
150
100
100
100
100
100
100
100
100
100
150
150
150
150
150
100
100
100
100
100
100
100
150
150
50
50
50
50
40
100
75
100
120
300
225
300
150
150
150
150
10
10
100
50
300
150
10
10
63
100
40
63
#JAN/JANTXlJANTXV available
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-11
460
220
310
630
800
220
460
800
140
120
300
160
100
250
140
140
120
300
-
•
BIPOLAR DEVICES -
METAL (continued)
TABLE 16. High-Gain/Low-Noise Transistors
These transistors are characterized for high-gain and low-noise applications. Devices are listed in decreasing order of NF.
Device
Package
TO-18
TO-46
Type
NF
Wideband
Typ" Max
dB
2N3962
2N3963
2N3965
2N3964
2N3798
2N3799
10
10
8.0
4.0
3.5
2.5
2N2604
2N2605#
4.0
4.0
V(BR)CEO
Volts
Min
IC
rnA
Max
Min
60
60
60
200
200
200
200
50
50
100
100
250
250
150
300
45
45
30
30
40
100
80
60
45
IC
h~E
IT
/LA
rnA"
MHz
Min
450
450
600
600
450
900
1.0
1.0
1.0
1.0
500
500
40
40
50
50
30
30
0.5
0.5
0.5
0.5
0.5
0.5
120
300
0.01
0.01
30
30
0.5
0.5
Max
T
T
IC
rnA
TABLE 17. High-Voltage/High-Current Amplifiers
The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in
decreasing order of V(BR)CEO within each package type.
NPN
TO-18
TO-205AD
2N6431
BSS73
BSS72
2N6430
BS$71
BC394
300
300
250
200
200
180
50
500
500
50
500
500
50
40
40
50
40
30
30
30
30
30
30
10
0.5
0.5
0.5
0.5
0.5
0.3
20
50
50
20
50
10
2.0
5.0
5.0
2.0
5.0
1.0
50
100
100
50
100
50
10
20
20
10
20
20
2N3439#
2N5058
BF259
2N344O#
2N4927
2N5059
MM3OO2
BF258
BSS78
2N4926
BUY49S
MM3002
BSSn
MM3009
BF357
2N35OO#
2N3501#
3N3114
BSW68A
MM3009
2N5682
BSW67A
2N349B#
2N3499#
2N5681
2N657
MM3007
2N4239
MM3006
350
300
300
250
250
250
250
250
250
200
200
200
200
180
160
150
150
150
150
150
120
120
100
100
100
100
100
80
80
1000
150
100
1000
50
150
50
100
500
50
3000
50
500
400
100
300
300
200
2000
200
1000
2000
500
500
1000
40
35
25
40
20
30
20
25
40
20
40
20
40
40
25
40
100
30
30
20
40
30
40
100
40
300
50
30
50
20
30
30
20
30
30
10
30
30
30
500
10
30
10
30
150
150
30
500
10
250
500
150
150
250
200
250
250
200
0.5
1.0
1.0
0.5
2.0
1.0
50
30
30
50
30
30
4.0
3.0
6.0
4.0
3.0
3.0
-
-
-
1.0
0.4
2.0
0.2
30
30
30
500
6.0
3.0
3.0
50
15
30
110
15
30
30
150
110
70
30
10
10
30
10
10
10
10
30
20
10
2500
3000
2500
-
-
-
0.4
30
3.0
-
-
-
1.0
0.4
0.4
1.0
1.0
30
150
150
50
500
6.0
15
15
5.0
150
-
-
-
250
500
25
150
30
30
25
40
15
50
15
0.6
1.0
0.6
0.6
0.6
4.0
0.35
0.3
0.35
300
300
250
200
150
500
150
#JAN/JANTXlJANTXV available
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-12
-
-
150
70
50
110
150
150
40
10
20
20
30
20
20
30
150
30
10
100
-
-
150
150
30
20
20
100
-
.,....
-
-
50
2.0
50
50
100
50
BIPOLAR DEVICES -
•
METAL (continued)
TABLE 17. High-Voltage High-Current Amplifiers (continued)
PNP
TO-18
TO-205AD
2N6433
BSS76
BSS75
2N6432
BSS74
BC393
2N3497
2N3496
300
300
250
200
200
180
120
80
500
500
500
1000
500
500
100
100
30
35
35
30
35
50
40
40
30
30
30
30
30
10
10
10
0.5
0.5
0.5
0.5
0.5
0.3
0.35
0.3
20
50
50
20
50
10
10
10
20
5.0
5.0
2.0
5.0
1.0
1.0
1.0
50
100
100
50
100
50
150
200
10
20
20
10
20
20
20
20
2N3494
2N3495
2N3635#
2N3636#
2N3637#
2N3743#
2N4036
2N4234
2N4235
2N4236
2N4928
2N4929
2N4930#
2N4931#
2N5415#
2N5416#
2N5679
2N5680
3N3634#
MM4000
MM4001
MM4002
MM4003
MM5005
MM5006
MM5007
80
120
140
175
175
300
65
40
60
80
100
150
200
250
200
300
100
120
140
100
150
200
250
60
80
100
100
100
1000
1000
1000
50
1000
3000
3000
3000
100
500
500
500
1000
1000
1000
1000
1000
100
500
500
500
2000
2000
2000
40
40
100
50
100
25
40
30
30
30
25
25
20
20
30
30
40
40
50
20
20
20
20
50
50
50
10
10
50
50
50
30
150
250
250
250
10
10
20
20
50
50
250
250
50
20
10
10
10
150
200
250
0.3
0.35
0.5
0.5
0.5
8.0
0.65
0.6
0.6
0.6
0.5
0.5
5.0
5.0
2.5
2.5
0.6
0.6
0.5
0.6
0.6
5.0
5.0
0.5
0.5
0.5
10
10
50
50
50
30
150
1000
1000
1000
10
10
10
10
50
50
250
250
50
10
10
10
10
150
150
150
1.0
1.0
5.0
5.0
5.0
3.0
15
125
125
125
1.0
1.0
1.0
1.0
5.0
5.0
25
25
5.0
1.0
1.0
1.0
1.0
15
15
15
200
150
200
150
200
30
60
3.0
3.0
3.0
100
100
20
20
15
15
30
30
150
20
20
30
30
30
10
50
100
100
100
20
20
20
20
10
10
100
100
30
-
-
-
-
30
30
30
50
50
50
#JANIJANTXlJANTXV available
TABLE 18. High-Frequency Amplifiers/Oscillators
The transistors shown are designed for use as both oscillators and amplifiers at UHF and VHF frequencies. Devices are listed in
decreasing order of V(BR)CEO with each line.
*JAN available
••JANIJANTX available
tJANIJANTXlJANTXVIJANS available
#JANIJANTXlJANTXV available
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-13
•
BIPOLAR DEVICES -
METAL (continued)
TABLE 19. Switching Transistors
The following devices are intended for use in general-purpose switching and amplifier applications. Within each package group
shown. the devices are listed in order of decreasing turn-on time (ton).
NPN
TO-18
2N2540
2N914"
2N4014
2N4013
2N2501
2N2369
2N2369At
2N3227
BSX20
40
40
35
35
15
12
12
12
7.0
60
25
18
18
18
18
2N3444-2N3253"
2N3735#
2N3734
2N3252
2N3506#
2N3507#
BSX60
2N3725
2N3725A
2N3724
2N3724A
BSX59
MM5262
2N5861
2N3303
50
50
48
48
45
45
45
40
35
35
35
35
35
30
25
15
70
70
60
60
70
90
90
70
60
60
60
60
60
60
60
25
1000
1000
500
1500
1500
500
500
500
500
500
500
1000
500
1000
TO-46
2N3737#
2N3648
48
16
60
18
1000
150
TO-52
MM1748A
10
15
2N2894
2N869A"
2N3546
2N4206
MM4258
2N4209
60
50
40
15
15
15
2N3634#
2N3635#
2N3636#
2N4036
2N4030
2N4031
2N4032
2N4033#
2N4406
2N4407
2N3245
2N3244
2N3467#
2N3468#
2N3762#
2N3763#
2N4404
2N4405"
2N5022
2N5023
400
400
400
110
100
100
100
100
75
75
55
50
40
40
43
43
40
40
40
40
90
80
30
20
20
20
600
600
600
700
240(typ)
24O(typ)
240(typ)
240(typ)
225
225
165
185
90
90
115
115
210
210
90
90
TO-205AD
40
40
60
150
200
500
500
300
100
10
100
100
30
15
50
30
20
15
15
20
15
500
50
40
50
50
30
40
50
30
50
30
30
30
45
50
50
-
100
12
35
35
10
20
40
30
20
150
10
500
500
500
100
10
100
10
0.45
0.7
0.52
0.42
0.3
0.25
0.2
0.25
0.25
150
200
500
500
50
10
10
10
10
15
20
50
50
5.0
1.0
1.0
1.0
1.0
250
300
300
300
350
500
500
500
400
20
20
50
50
10
10
10
10
10
500
500
1000
1000
500
1500
1500
500
500
500
500
500
500
1000
500
10
0.6
0.6
0.5
0.5
0.5
1.0
1.0
0.5
0.52
0.52
0.42
0.42
0.5
0.8
0.5
0.7
500
500
500
500
500
1500
1500
500
500
500
500
500
500
1000
500
1000
50
50
50
50
50
150
150
50
50
50
50
50
50
100
50
100
175
175
250
250
200
60
60
50
50
50
50
50
100
100
-
3000
3000
1000
2000
1200
2000
1200
1000
2000
2000
1000
20
25
20
30
30
40
30
30
35
35
35
35
25
25
25
20
350(typ)
200
450
50
50
100
50
15
1500
500
20
30
1000
150
0.5
0.4
500
150
50
15
250
450
50
15
10
-
150
20
10
-
-
-
600
5.0
30
30
50
10
10
10
12
18
12
12
12
15
200
200
30
30
50
10
10
10
0.2
0.2
0.25
0.15
0.15
0.6
3.0
3.0
5.0
1.0
1.0
5.0
400
400
700
700
700
850
30
10
10
10
10
10
50
50
50
150
500
500
500
500
1000
1000
500
500
500
500
1000
1000
500
500
500
500
140
140
175
65
60
80
60
80
80
80
50
40
40
50
40
60
80
80
40
40
25
30
30
50
50
100
50
40
15
10
40
25
20
30
30
50
40
25
30
20
30
50
25
40
50
50
50
150
1000
1000
1000
1000
1000
1000
500
500
500
500
1000
1000
500
500
1000
1000
0.5
0.5
0.5
0.65
1.0
0.5
1.0
0.5
0.7
0.7
0.6
0.5
0.5
0.6
0.9
0.9
0.5
0.5
0.8
0.7
5.0
5.0
5.0
15
100
50
100
50
100
100
50
50
50
50
100
100
50
50
100
100
150
200
150
30
30
30
50
50
50.
50
50
50
50
50
50
50
50
50
50
50
50
50
50
500
150
1000
1000
500
200
50
500
1500
1500
-
-
-
300
300
300
300
50
50
50
50
-
-
PNP
TO-18
TO-205AD
..JAN/JANTX available
-
200
200
200
1000
1000
1000
1000
1000
1000
1000
1000
1500
1500
1000
1000
100
1000
1500
1500
1000
1000
500
500
#JAN/JANTXlJANTXV available
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-14
30
30
50
10
10
50
50
50
50
150
1000
500
1000
500
1000
1000
500
500
500
500
1000
1000
500
500
1000
1000
60
100
100
150
150
150
150
150
175
175
150
180
150
200
200
170
200
BIPOLAR DEVICES -
•
METAL (continued)
TABLE 20. Choppers
Devices are listed in decreasing V(BR)EBO.
Package
Device
V(BR)EBO
Min
V(BRIECO
hFE(inv)
Min
40
30
25
25
35
20
20
20
20
15
30
4.0
Offset Vollage
VEC(ofs)
On-Slate
Resistance
'ec(on)
Max (mV)
Max (0)
2.0
0.5
1.0
1.0
8.0
8.0
6.0
35
PNP
TO-46
2N2946A
2N5230
2N2945A
2N2945
JAN/JANTX available
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-15
•
!
Field-Effect Transistors
Motorola offers a line of field-effect transistors that encompasses the latest technology and covers the full range of FET
applications. Included here is a wide variety of junction FETs
(JFETs), MOSFETs (with P- or N-channel polarity with both single and dual gates) and TMOS FETs. These FETs include
devices developed for operation across the frequency range
from dc to UHF in switching and amplifying applications. Package options from low cost plastic to metal TO-72 packages are
available. The selector guides on the following pages are
designed to emphasize those FET families and device types
that, by virtue of widespread industry use, ease of manufacture
and, consequently, low relative cost, merit first consideration for
new equipment design.
ASE20_0!t
TO-72
. CASE 22-03
TO-18
3 21
4
3 2
3
1
1
CASE 29_04
TO-226M
21
3
JFETs
1
2
CASE 79-02
TO-205AD
~
k
CASE 370-01
JFETs operate in the depletion mode. They are available in
both P- and N-channel are are offered in both metal and plastic
packages. Applications include general-purpose amplifiers,
switches and choppers, and RF amplifiers and mixers. These
devices are economical and very rugged. The drain and source
are interchangeable on many typical FETs.
o
o
Depletion S
Depletion S
P-Channel JFETs
Package
TO-
Re !Yos!
Ciss
3
of¢~~, of¢N~~'
TABLE 1. Low-Frequency/Low-Noise
Re!Yfs!
2
C rss
V(BR)GSS
V(BRiGDO
(mmho)
Min
("mho)
Max
(pF)
Max
(pF)
Max
(V)
Min
VGS(offl
lOSS
(V)
(mA)
Min
Max
Min
72
2N3909
1.0
100
32
16
20
0.3
7.9
0.3
15
92
MPF2608
1.0
-
17
-
30
1.0
4.0
0.9
4.5
Device
Max
92
2N5460
1.0
50
7.0
2.0
40
0.75
6.0
1.0
5.0
92
2N5463
1.0
75
7.0
2.0
60
0.5
4.0
1.0
5.0
72
2N3330
1.5
40
20
2.0
6.0
1.5
40
20
20
-
6.0
MPF3330
-
20
92
6.0
2.0
6.0
92
2N5461
1.5
50
7.0
2.0
40
1.0
7.5
2.0
9.0
92
2N5464
1.5
75
7.0
2.0
60
0.8
4.5
2.0
9.0
92
2N5462
2.0
50
7.0
2.0
40
1.8
9.0
4.0
16
92
2N5465
2.0
75
7.0
2.0
60
1.5
6.0
4.0
16
72
2N3909A
2.2
100
9.0
3.0
20
0.3
7.9
1.0
15
N-ChannelJFETs
Re !Yfs!
Re!Yos!
@
Package
TO-
Device
Ciss
C rss
V(BR)GSS
VjBRiGDO
lOSS
VGS(offl
(V)
@
(mmho)
Min
f
(MHz)
(pmho)
Max
f
(MHz)
(pF)
Max
(pF)
Max
(V)
Min
Min
(mA)
Max
Min
Max
0.6
18
2N3370
0.3
30
15
30
20
3.0
40
-
3.2
0.1
92
J201
0.5
20
1.01
20
5.01
2.01
40
0.3
1.5
0.2
1.0
18
2N3369
0.6
30
30
30
20
3.0
40
-
6.5
0.5
2.5
18
2N4339
0.8
15
15
15
7.0
3.0
50
0.6
1.8
0.5
1.5
92
MPF4339
0.8
15
15
15
7.0
3.0
50
0.6
1.8
0.5
1.5
18
2N3460
0.8
20
5.0
30
18
6.0
50
1.8
0.2
1.0
18
2N3438
0.8
20
5.0
30
18
6.0
50
2.3
0.2
1.0
72
2N4220
1.0
15
10
15
6.0
2.0
30
-
4.0
0.5
3.0
72
2N4220A
1.0
15
10
15
6.0
2.0
30
-
4.0
0.5
3.0
I = typical
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-16
•
FIELD-EFFECT TRANSISTORS (continued)
TABLE 1. Low-Frequency/Low-Noise (continued)
N·Channel JFETs (continued)
RelY!sl
Re
vGSCol!l
IDSS
(V)
!
!
(pF)
Max
(V)
Min
(mA)
(MHz)
(,..mho)
Max
(MHz)
(pF)
Max
Min
Max
Min
Max
92
J202
1.0
20
3.51
20
5.01
2.01
40
0.8
4.0
0.9
4.5
18
2N3368
1.0
30
80
30
20
3.0
40
-
11.5
2.0
12
72
2N5359
1.2
15
10
15
6.0
2.0
40
0.8
4.0
0.6
1.6
3.6
Package
TO-
=
V(BR)GSS
VCBRIGDO
crss
Ciss
@
@
t
IYosl
Device
(mmho)
Min
18
2N4340
1.3
15
30
15
7.0
3.0
50
1.0
3.0
1.2
72
2N5360
1.4
15
20
15
6.0
2.0
40
0.8
4.0
0.5
2.5
92
2N5458
1.5
15
50
15
7.0
3.0
25
1.0
7.0
2.0
9.0
5.0
72
2N5361
1.5
15
20
15
6.0
2.0
40
1.0
6.0
2.5
92
J203
1.5
20
101
20
5.01
2.0 1
40
2.0
10
4.0
20
18
2N3459
1.5
20
20
30
18
6.0
50
-
3.4
0.8
4.0
72
2N3821
1.5
15
10
15
6.0
3.0
50
-
4.0
0.5
2.5
92
MPF3821
1.5
15
10
15
6.0
3.0
50
4.0
0.5
2.5
18
2N3437
1.5
20
20
30
18
6.0
50
-
4.8
0.8
4.0
92
2N5457
2.0
15
50
15
7.0
3.0
25
0.5
6.0
1.0
5.0
92
2N5459
2.0
15
50
15
7.0
3.0
25
2.0
8.0
4.0
16
72
2N4221
2.0
15
20
15
6.0
2.0
30
6.0
2.0
6.0
92
MPF4221
2.0
15
20
15
6.0
2.0
30
6.0
2.0
6.0
72
2N4221A
2.0
15
20
15
6.0
2.0
30
6.0
2.0
6.0
72
2N3822
2.0
15
20
15
6.0
3.0
50
6.0
2.0
10
92
MPF3822
2.0
15
20
15
6.0
3.0
50
-
6.0
2.0
10
18
2N4341
2.0
15
60
15
7.0
3.0
50
2.0
6.0
3.0
9.0
72
2N4222
2.5
15
40
15
6.0
2.0
30
5.0
15
2N4222A
2.5
15
40
15
6.0
2.0
30
8.0
5.0
15
92
MPF4222A
2.5
15
40
15
6.0
2.0
30
-
8.0
72
8.0
5.0
15
92
2N5670
3.0
15
75
15
7.0
3.0
25
2.0
8.0
8.0
20
18
2N4398
121
0.001
-
-
14
3.5
40
0.5
3.0
5.0
30
72
2N4118
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
92
MPF4118
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
72
2N4118A
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
92
MPF4118A
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
tYPical
TABLE 2. High-Frequency Amplifiers
N·Channel JFETs
Re IYosl
RelY!sl
@
Package
TO-
Device
Ciss
V(BR)GSS
ViBRiGDO
NF
Crss
VGSCofll
IDSS
M
@
@
(mA)
(mmho)
Min
(MHz)
(,..mho)
Max
(MHz)
(pF)
Max
(pF)
Max
(dB)
Max
RG = 1K
!(MHz)
Min
Min
Max
Min
!
!
(V)
Max
92
2N5669
1.6
100
100
100
7.0
3.0
2.5
100
25
1.0
6.0
4.0
10
92
MPF102
1.6
100
200
100
7.0
3.0
-
-
25
-
8.0
2.0
20
92
2N3819
1.6
100
-
-
8.0
4.0
-
-
25
-
8.0
2.0
20
92
2N5668
1.0
100
50
100
7.0
3.0
2.5
100
25
0.2
4.0
1.0
5.0
92
MPF4224
1.7
200
200
200
6.0
2.0
-
-
30
0.1
8.0
2.0
20
92
2N5484
2.5
100
75
100
5.0
1.0
3.0
100
25
0.3
3.0
1.0
5.0
92
2N5670
2.5
100
150
100
7.0
3.0
2.5
100
25
2.0
8.0
8.0
20
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-17
•
FIELD-EFFECT TRANSISTORS (continued)
TABLE 2. High-Frequency Amplifiers (continued)
N-Channel JFETs (continued)
Re IYosl
ReIY'sl
,
@
Package
TO-
Ciss
,
crss
vGS(off)
(,.mho)
Max
(MHz)
(pF)
Max
(pF)
Max
RG = lK
!(MHz)
(dB)
Max
lOSS
(rnA)
(V)
@
@
(mmho)
Min
(MHz)
V(BR)GSS
V(BRiGOO
NF
(V)
Min
Min
Max
Min
Max
92
2N5246
2.5
400
100
400
4.5
1.0
-
-
30
0.5
4.0
1.5
7.0
92
MPF4223
2.7
200
200
200
6.0
2.0
5.0
200
30
0.1
8.0
3.0
18
92
2N5485
400
4.0
4.01
1.0
4.0
4.0
10
100
1.0
0.81
25
400
5.0
3.01
400
J305
100
801
400
92
3.0
3.01
400
30
0.5
3.0
1.0
8.0
72
2N3823
3.2
200
200
200
6.0
2.0
2.5
100
30
-
8.0
4.0
20
92
2N5486
3.5
400
100
400
5.0
1.0
4.0
400
25
2.0
6.0
8.0
20
72
2N4416
40
.400
100
400
4.0
0.8
4.0
400
30
2.0
6.0
5.0
15
72
2N4416A
4.0
400
100
400
4.0
0.8
4.0
400
30
2.0
6.0
5.0
15
92
2N5245
4.0
400
100
400
4.5
1.0
4.0
400
30
1.0
6.0
5.0
15
92
2N5247
4.0
400
150
400
4.5
4.0
4.01
400
30
1.5
8.0
8.0
24
Davlce
92
J304
4.21
400
801
100
3.01
1.0
0.81
400
30
2.0
6.0
5.0
15
52
U308
10
0.001
150
100
5.. 0
2.5
3.01
450
25
1.0
6.0
12
60
52
U309
10
0.001
150
100
5.0
2.5
3.01
450
25
1.0
4.0
12
30
52
U310
10
0.001
100
5.0
2.5
450
25
2.5
6.0
24
60
92
J308
121
100
150
2501
100
7.5
2.5
3.01
1.51
100
25
1.0
6.5
12
60
92
J309
121
100
2501
100
7.5
2.5
1.51
100
25
1.0
4.0
12
30
92
J310
121
100
2501
100
7.5
2.5
1.51
100
25
2.0
6.5
24
60
t = typical
TABLE 3. Switches and Choppers
P-Channel JFETs
rdson)
VGS(oll)
lOSS
(V)
(rnA)
@
Package
TO-
Oevice
(0)
Max
10
UtA)
Min
Max
V(BR)GSS
V(BR)GOO
Ciss
Crss
ton
toll
(ns)
Max
Min
Max
(V)
Min
(pF)
Max
(pF)
Max
(ns)
Max
92
MPF970
100
1.0
5.0
12
15
100
30
12
5.0
8.0
25
92
MPF971
250
1.0
1.0
7.0
2.0
80
30
12
5.0
10
120
72
2N3993
150
9.5
10
-
25
16
4.5
-
-
2N3994
300
-
4.0
72
1.0
5.5
2.0
-
25
16
4.5
-
-
N-Channel JFETs
18
MFE2012
10
-
3.0
10
100
-
25
50
20
16
37
18
MFE2011
15
1.0
1.0
10
40
25
50
20
10
20
30
10
4.0
8.0
20
30
10
4.0
8.0
20
40
10
4.0
8.0
20
18
2N4859A
25
-
2.0
6.0
50
92
MPF4859A
25
-
2.0
6.0
50
18
2N4856A
25
-
4.0
10
50
-
92
MPF4856A
25
-
4.0
10
50
-
40
10
4.0
8.0
20
18
2N4856
26
-
4.0
10
50
40
10
8.0
9.0
25
92
18
MPF4856
2N4859
25
25
-
4.0
4.0
10
10
50
50
40
30
10
18
8.0
8.0
9.0
9.0
25
25
92
MPF4859
25
-
4.0
10
50
-
30
18
8.0
9.0
25
18
MFE2010
25
1.0
0.5
10
15
-
25
50
20
10
35
-
18
2N4391
30
1.0
4.0
10
50
150
40
14
3.5
15
20
92
MPF4391
30
1.0
4.0
10
60
130
20
10
3.5
15
20
92
2N5638
30
1.0
-
(12)
50
-
30
10
4.0
9.0
15
18
2N4091
30
1.0
5.0
10
30
-
40
16
5.0
25
40
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-18
•
FIELD-EFFECT TRANSISTORS (continued)
TABLE 3. Switches and Choppers (continued)
N-Channel JFETs (continued)
rds on)
VGS(off)
loSS
(V)
(rnA)
@
Package
TO-
t
~
Oevice
(0)
Max
V(BR)GSS
V(BR)GOO
(V)
10
(PA)
Min
Max
Min
Max
Min
Ciss
Crss
ton
toff
(pF)
Max
(pF)
Max
(ns)
Max
(ns)
Max
92
MPF4091
30
1.0
5.0
10
30
-
40
16
5.0
25
40
92
Jill
30
1.0
3.0
10
20
-
35
101
5.01
13
35
-30
16
5.0
20
40
40
25
6.0
20
30
30
18
MFE2006
30
1.0
-5.0
-10
30
-
18
2N3970
30
1.0
4.0
10
50
150
92
MPF3970
30
1.0
4.0
10
50
150
40
25
6.0
20
18
2N5857A
40
2.0
6.0
20
100
40
10
3.5
10
40
92
MPF4857A
40
2.0
6.0
20
100
40
10
3.5
10
40
2.0
6.0
20
100
30
10
3.5
10
40
2.0
6.0
20
100
30
10
3.5
10
40
20
100
40
18
8.0
10
50
18
2N4860A
40
92
MPF4860A
40
-
18
2N4857
40
-
2.0
6.0
92
MPF4857
40
6.0
20
100
40
18
8.0
10
50
2N4860
40
2.0
6.0
20
100
30
18
8.0
10
50
92
MPF4860
40
-
2.0
18
2.0
6.0
20
100
30
18
8.0
10
50
18
2N4092
50
1.0
2.0
7.0
15
-
40
92
J112
50
1.0
1.0
5.0
5.0
-
35
16
101
5.0
5.01
35
13t
60
351
18
MFE2005
50
1.0
-2.0
-8.0
15
-
-30
16
5.0
35
60
18
2N4392
60
1.0
2.0
5.0
25
75
40
14
3.5
15
35
92
MPF4392
60
1.0
2.0
5.0
25
75
20
10
3.5
15
35
18
2N4858A
60
1.0
0.8
4.0
8.0
80
40
10
3.5
16
80
92
MPF4858A
60
1.0
0.8
4.0
8.0
80
40
10
3.5
16
80
18
2N4861A
60
0.8
4.0
8.0
80
30
10
3.5
16
80
92
MPF4861A
60
-
0.8
4.0
8.0
80
30
10
3.5
16
80
92
2N5639
60
1.0
-
(8.0)1
25
-
30
10
4.0
14
30
18
2N3971
60
1.0
2.0
5.0
25
75
40
25
6.0
30
60
18
2N4858
60
-
0.8
4.0
8.0
80
40
18
8.0
20
100
92
MPF4858
60
-
0.8
4.0
8.0
80
40
18
8.0
20
100
18
2N4861
60
0.8
4.0
8.0
80
30
18
8.0
20
100
100
92
MPF4861
60
-
0.8
4.0
8.0
80
30
18
8.0
20
18
2N4093
80
1.0
1.0
5.0
80
-
40
16
5.0
60
80
18
MFE2004
80
1.0
-1.0
-6.0
8.0
-
-30
16
5.0
60
80
18
2N4393
100
1.0
0.5
3.0
5.0
30
40
14
3.5
15
50
92
MPF4393
100
1.0
0.5
3.0
5.0
30
20
10
3.5
15
55
92
2N5640
100
1.0
-
(6.0)
5.0
-
30
10
4.0
18
45
18
2N3972
100
1.0
0.5
3.0
5.0
30
40
25
6.0
80
100
92
MPF3972
100
1.0
0.5
3.0
5.0
30
40
J113
100
1.0
0.5
3.0
2.0
-
35
25
lOt
6.0
5.0t
60
92
13t
100
35t
-
25
-
25
-
25
-
92
BF246
-
-
0.5
14
10
300
25
92
BF246A
351
1.0
1.5
4.0
30
80
25
92
BF246B
501
1.0
3.0
7.0
60
140
25
92
BF246C
651
1.0
5.5
12
110
250
25
92
Jl07
8.0
0.5
4.5
100
Jl08
8.0
3.0
10
80
92
Jl09
12
2.0
6.0
40
92
Jl10
18
0.5
4.0
10
-
25
92
-
typical
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-19
-
-
-
-
-
-
-
-
-
-
-
-
-
•
Single Gate
FIELD-EFFECT TRANSISTORS (continued)
o
o
°
~~ ~:@
MOSFETs
MOSFETs are available in either depletion/enhancement or
enhancement mode (in general, depletion/enhancement devices
are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel, and
both single gate and dual gate construction. Some MOSFETs
are also offered with input diode protection which reduces the
chance of damage from static charge in handling.
Enhancement
s
~~
6
Depletion 5
Enhancement S
Dual G a t : , @ D
G'o-+_--'
G2
G2o--,f---1f-1-'
TABLE 4. Dual Gate
N-CHANNEL
These devices are especially suited for RF amplifier and mixer
applications in TV tuners, radio, etc. The Dual Gate construction
also allows easy AGe control with very low power.
Enhancement S
Depletion
N-Channel MOSFETs
Re IYIsI
Re IYosl
@
t
V(BR)GSS
V(BR)GDO
NF
Crss
@
VGS(off)
IDSS
(mA)
(V)
@
(,.mho)
Max
f
(MHz)
(pF)
Max
(pF)
Max
(dB)
Max
RG = 1K
f(MHz)
Min
Min
Max
Min
0.001
-
-
4.0
0.02
3.5
200
10
0.5
2.0
5.0
20
0.001
-
200
±6.0
-0.2
-5.5
6.0
40
0.05
4.0
45
±6.0
-0.2
-5.5
6.0
40
3N203
7.0
0.001
-
4.31
0.03
4.5
200
±6.0
-0.2
-5.0
3.0
11
72
3N201
8.0
0.001
-
4.51
0.03
4.5
200
±6.0
-0.2
-5.0
6.0
30
72
3N202
8.0
0.001
4.31
0.03
4.5
200
±6.0
-0.2
-5.0
6.0
30
72
MFE121
10
0.001
-
3.5
0.01
-
0.05
3N213
17
15 .
6.0
0.02
5.0
60
±7.0
-4.0
5.0
30
72
MFE131
8.0
0.001
7.0
0.05
5.0
200
±7.0
-4.0
3.0
30
72
3N204
10
0.001
5.0
400
25
-0.2
-4.0
6.0
30
3N205
10
0.001
-
0.03
72
-
0.03
5.0
400
25
-0.2
-4.0
6.0
30
72
3N209
10
0.001
-
7.0
0.03
6.0
500
±7.0
-0.1
-4.0
5.0
30
Packege
TO-
Device
72'
MFE521
10
72
3N211
72
72
~
Ciss
(mmho)
f
Min
(MHz)
-
-
-
(V)
-
Max
tyPiCal
TABLE 5. Low-Frequency/Low-Noise
P-Channel MOSFETs
RelYfSI
Packege
TO-
Ciss
Cras
(mmho)
Min
(,.mho)
Max
(pF)
Max
(pF)
Max
V(BR)DSS
VGS(th)
IDSS
(V)
(mA)
(V)
Min
Min
Max
Min
Max
72
3N155
1.0
60
5.0
1.3
-35
-1.5
-3.2
-1.0
72
3N156
1.0
60
5.0
1.3
-35
-3.0
-5.0
-
72
3N157
1.0
60
5.0
1.3
-35
-1.5
-3.2
-
-1.0
72
3N158
1.0
60
5.0
1.3
-35
-3.0
-5.0
-
-1.0
72
3N158A
1.0
60
5.0
1.3
-25
-2.0
-6.0
-
-20
18
MFE823
1.0
-
6.0
1.5
-50
-3.0
-5.0
-
-0.25
1.8
7.0
-7.0
Device
-1.0
N-Channel MOSFETs
0.8
25
4.0
0.7
20
-
5.0
1.3
25
1.0
-
5.0
1.3
3N170
1.0
-
5.0
72
3N171
1.0
18
2N3797
1.5
18
2N3796
0.4
18
MFE825
0.5
72
2N4351
1.0
72
3N169
72
-
2.0
6.0
-
1.0
25
1.0
5.0
10
25
0.5
1.5
-
1.3
25
1.0
2.0
-
5.0
1.3
25
1.5
3.0
-
10
8.0
0.8
25
-
-7.0
2.0
6.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-20
10
10
FIELD-EFFECT TRANSISTORS (continued)
N-CHANNEL
P-CHANNEL
Enhancement
Enhancement
N-CHANNEL
Small-Signal TMOS
TABLE 6. TMOS Switches and Choppers
Depletion
N-CHANNEL TMOS TO-226AA, Style 5
VGS(th)
'OS(on)
Device
Max
V(BR)OSS
Ciss
Crss
ton
toft
V
pF
Max
ns
Max
Max
V
@
(}
10
A
Min
Max
Min
pF
Max
ns
VN0300L
1.2
1.0
O.B
2.5
30
100
25
30
30
2N7000
5.0·
0.5
O.B
3.0
60
60
5.0
10
10
BS170
5.0
0.2
O.B
3.0
60
25 Typ
3.0 Typ
10
10
VN0610LL
5.0
0.5
O.B
2.5
60
60
5.0
10
10
VN1706L
6.0
0.5
O.B
2.0
170
125
20
16
30
VN2406L
6.0
0.5
O.B
2.0
240
125
20
16
30
BSSB9
6.4
0.25
1.0
2.7
200
90
3.5
15
15
BS107A
6.4
0.25
1.0
3.0
200
70Typ
6.0 Typ
15
15
MPF9200
6.4
0.25
1.0
4.0
200
90
10
15
15
2N700B
7.5
0.5
1.0
2.5
60
50
5.0
20
20
VN2222LL
7.5
0.5
0.6
2.5
60
60
5.0
10
10
BS10B
B.5
0.1
0.3
2.0
200
90
B.O
B.O Typ
10 Typ
VN1710L
10
0.5
O.B
2.0
170
125
20
16
50
VN2410L
10
0.5
O.B
2.0
240
125
20
16
50
MPF4150t
12
0.1
1.0
6.0
150
125
15
-
-
BS107
14
0.2
1.0
3.0
200
70 Typ
6.0 Typ
15
15
MPF350
35
0.1
1.0
4.0
350
125
20
20
20
2N7007
45
0.05
1.0
2.5
240
30
10
30
30
MPF500
50
0.1
1.0
4.0
500
125
20
20
20
MPF4BO
BO
0.01
0.5
3.0
BO
B.O
7.0
20
20
MPF4B1
140
0.01
0.5
3.0
1BO
B.O
7.0
20
20
P-CHANNEL TMOS TO-226AA, Style 5
VP0300L
2.5
1.0
2.0
4.5
30
150
60
30
30
BS170P
5.0
0.2
1.0
3.5
60
110
25
15
15
BS250
14
0.2
1.0
3.5
45
150
25
10
10
15
N-CHANNEL TMOS TO-226AE (1 WATT), Style 22
MPF930
1.4
1.0
1.0
3.5
35
70
1B
15
MPF960
1.7
1.0
1.0
3.5
60
70
1B
15
15
MPF6659
1.B
1.0
O.B
2.0
35
50
10
5.0
5.0
MPF990
2.0
1.0
1.0
3.5
90
70
1B
15
15
MPF6660
3.0
1.0
O.B
2.0
60
50
10
5.0
5.0
5.0
MPF6661
4.0
1.0
O.B
2.0
90
50
10
5.0
MPF910
5.0
0.5
O.B
2.5
60
50
10
10
10
MPFB9
6.4
0.25
1.0
2.7
200
90
3.5
15
15
P-CHANNEL TMOS TO-226AE (1 WATT), Style 22
MPF930P
1.4
1.0
1.0
3.5
35
150
50
30
30
MPF960P
1.7
1.0
1.0
3.5
60
150
50
30
30
MPF990P
2.0
1.0
1.0
3.5
90
150
50
30
30
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-21
•
•
FIELD-EFFECT TRANSISTORS (continued)
TABLE 6. TMOS Switches and Choppers (continued)
N-CHANNEL TMOS CASE 370-01 (FET DIP) Style 1
rOS(on)
@
V(BR)OSS
Volt
Gts
Coss
@25V
pF
Max
Crss
@25V
pF
Max
tr
td(off)
tf
@
5.0 V
Amp
Ciss
@25V
pF
Max
!cI(on)
mhos
Min
ns
Max
ns
Max
ns
Max
ns
Max
Device
Max
mA
Min
1000n)
VGS = 10V
VOS = 5.0 V
Amp
IRFDl20
0.3
600
100
1.3
0.9
0.6
600
400
100
40
70
100
70
IRFD123
0.4
600
60
1.1
0.9
0.6
600
400
100
40
70
100
70
20
0
IRFDll0
0.6
600
100
1.0
O.B
O.B
200
100
25
20
25
25
IRFDl13
O.B
BOO
60
O.B
O.B
O.B
200
100
25
20
25
25
20
IRFD220
O.B
400
200
O.B
0.5
0.4
600
300
BO
40
60
100
60
IRFD223
1.2
400
150
0.7
0.5
0.4
600
300
BO
40
60
100
60
IRFD210
1.5
600
200
0.6
0.3
0.5
150
BO
25
15
25
15
15
IRFD213
2.4
300
150
0.45
0.3
0.5
150
BO
25
15
25
15
15
IRFD1Z0
2.4
250
100
0.5
0.25
0.25
70
30
10
20
25
25
20
IRFD1Z3
3.2
250
60
0.4
0.25
0.25
70
30
10
20
25
25
20
P-CHANNEL TMOS CASE 370-01 (FET DIP) Style 1
IRFD9120
0.6.
BOO
100
1.0
O.B
O.B
450
350
100
50
100
100
100
IRFD9123
O.B
BOO
60
O.B
O.B
O.B
450
350
100
50
100
100
100
IRFD9110
1.2
300
100
0.7
0.6
0.3
250
100
35
30
60
40
40
IRF09112
1.2 .
300
100
0.6
0.6
0.3
250
100
35
30
60
40
40
N-CHANNEL TMOS TO-205AD, Style 6
rOS(on)
Max
Min
0
Device
V(BR)OSS
Clss
Crss
ton
toft
Max
V
Min
pF
Max
pF
Max
ns
Max
ns
Max
VGS(th)
V
@
10
A
VN0300B
1.2
1.0
O.B
2.5
30
100
25
30
30
MFE930
1.4
1.0
1.0
3.5
35
70
lB
15
15
MFE960
1.7
1.0
1.0
3.5
60
70
lB
15
15
2N6659
1.B
1.0
O.B
2.0
35
50
10
5.0
5.0
MFE990
2.0
1.0
1.0
3.5
90
70
lB
15
15
2N6660
3.0
1.0
0.8
2.0
60
50
10
5.0
5.0
2N6661
4.0
1.0
O.B
2.0
90
50
10
5.0
5.0
MFE91 0
5.0
0.5
O.B
2.5
60.
50
10
10
10
VN1706B
6.0
0.5
O.B
2.0
170
125
20
16
30
VN2406B
6.0
0.5
O.B
2.0
240
125
20
16
30
MFE9200tt
6.4
0.25
1.0
4.0
200
90
10
15
15
VN1710B
10
9·5
O.B
2.0
170
125
20
16
57
VN2410B
10
0.5
O.B
2.0
240
125
20
16
57
MFE4150t
12
0.1
1.0
6.0
150
125
15
-
-
MFE350
35
0.1
1.0
4.0
350
125
20
20
20
MFE500
50
0.1
1.0
4.0
500
125
20
20
20
P-CHANNEL TMOS TO-205AD, Style 6
MFE930P
1.4
1.0
1.0
3.5
35
150
50
30
30
MFE960P
1.7
1.0
1.0
3.5
60
150
50
30
30
MFE990P
2.0
1.0
1.0
3.5
90
150
50
30
30
VP0300B
2.5
1.0
2.0
4.5
30
150
60
30
30
.tOepletion Mode
ttTO-1B -Case Style 12
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-22
•
FIELD-EFFECT TRANSISTORS (continued)
TABLE 6. TMOS Switches and Choppers (continued)
N-CHANNEL TMOS TO-205AF, Style 6
rOS(on)
VGS(th)
V
@
v(BR)OSS
Ciss
Crss
ton
toff
V
Min
pF
Max
pF
Max
ns
Max
ns
Max
0
Max
10
A
Min
2N6796
0.18
8.0
2.0
4.0
100
900
150
105
85
IRFF130
0.18
8.0
2.0
4.0
100
800
150
200
250
Device
Max
IRFF133
0.25
7.0
2.0
4.0
60
800
150
200
250
IRFF120
0.3
6.0
2.0
4.0
100
600
100
110
170
2N6798
0.4
5.5
2.0
4.0
200
900
150
80
90
IRFF123
0.4
5.0
2.0
4.0
60
600
100
110
170
IRFF230
0.4
5.5
2.0
4.0
200
150
150
80
90
2N6782
0.6
3.5
2.0
4.0
100
200
25
40
45
IRFFll0
0.6
3.5
2.0
4.0
100
200
25
45
45
IRFF233
0.6
4.5
2.0
4.0
150
800
150
80
90
100
2N6790
0.8
3.5
2.0
4.0
200
600
80
90
IRFFl13
0.8
3.0
2.0
4.0
60
200
25
45
45
IRFF220
0.8
3.5
2.0
4.0
200
600
80
100
160
2N6800
1.0
3.0
2.0
4.0
400
900
80
65
90
IRFF330
1.0
3.5
2.0
4.0
400
900
80
65
90
IRFF223
1.2
3.0
2.0
4.0
150
600
80
100
160
MFE930
1.4
1.0
1.0
3.5
35
70
18
15
15
2N6784
1.5
2.25
2.0
4.0
200
200
25
35
50
2N6802
1.5
3.5
2.0
4.0
500
900
60
60
85
IRFF210
1.5
2.2
2.0
4.0
200
150
25
40
30
IRFF333
1.5
3.0
2.0
4.0
350
900
80
65
90
IRFF430
1.5
2.75
2.0
4.0
500
800
60
60
85
25
IRFF313
1.5
1.15
2.0
4.0
350
150
15
30
MFE960
1.7
1.0
1.0
3.5
60
70
18
15
15
2N6659
1.8
1.0
0.8
2.0
35
50
10
5.0
5.0
85
IRFF433
2.0
2.25
2.0
4.0
450
800
60
60
MFE960
2.0
1.0
1.0
3.5
90
70
18
15
15
IRFF213
2.4
1.8
2.0
4.0
150
150
25
40
30
2N6660
3.0
1.0
0.8
2.0
60
50
10
5.0
5.0
2N6786'
3.6
1.25
2.0
4.0
400
200
15
35
65
IRFF310
3.6
1.35
2.0
4.0
400
150
15
30
25
2N6661
4.0
1.0
0.8
2.0
90
50
10
5.0
5.0
P-CHANNEL TMOS TO-205AF, Style 6
IRFF9120
IRFF9123
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-23
•
Multiple Devices
~
~ __
CASE 607-04
14
~
1
I
10
CASE 606-04
1
~:~.. ,,--~""
,--8.
Bipolar Devices
The trend in electronic system design is toward the use of
integrated circuits - to reduce component cost, assembly cost,
and equipment cost. But IGs still aren't all things to all people,
and for those circuit designs where IGs are not available, there
is a noticeable swing towards the use of multiple devices.*
Motorola is reacting to this expanding market requirement by
making available a large selection of quad, dual, Darlington transistors, and diode arrays for off-the-shelf delivery. The chips
used in the Quad and Dual transistors are those that have
emerged as the most popular ones for discrete transistor applications. But even beyond that, Motorola offers its entire vast
repertoire of discrete small-signal transistors for multiple-device
packaging. For special applications where the devices in these
tables might not quite fit the design requirements, special configurations can be supplied with quick turnaround time and at
low premiums.
1
CASE 632-02
1 CASE 646-06
1
CASE 648-06
16
14
CASE 751-02
CASE 751A-02
CASE 7518-03
-Multiple devices, as described here, encompass two or more transistor or diode chips in a single package. Included in this
definition are the Darlington transistors which consist of two interconnected devices functioning as a single-stage amplifier.
Specification Tables
The·following short form specifications include Quad and Dual bipolar transistors listed in alphanumeric order. Some columns denote
two different types of data indicated by either bold or italic typeface. See key and headings for proper identification. This applies to
Table 1 and 2 of this section only.
KEY
TYPE NO.
10
Po
Watts
One
Die
Only
hFE1 AVBE
- - mV
hFE2 Max
Ii
VCE
Volts
j
.i!
NF @
Gp
dB
Min
dB
Max
VCE
IC
Amp
Max
AlphanumerIC listing
hFE @ IC
Min I
l!
"
IT
MHz
Min
Cob
pF
Max
ton
ns
Max
toft
ns
Max
rn-mA
u-p.
A- GeneraJ Purpose Amplrf1er
Product.
Ie -
JEDECOutiinel
Motorola Package
Outline.
Col/ector-Emitter
SaturatIon Voltage
Test Current
Current Units: u- p.A
m-mA
A-Amp
E - Low Noise Audio Amplifier
F -low Noise RF Amplifier
G- General Purpose Amplrtier
dierabng.
Ref. POint A- Ambient temperature
C- Case temperature
PACKAGE
TO-I Case
No. No.
VCE(sat) -
Current·Gam-Bandwldth
~~ssipetion specilied at 25°C. Single
"
AUD -10-15 kHz
Frequency Units:
H-Hertz
K-kHz
M-MHz
G-GHz
2nd Letter; Use
end SWlch
H- Tuned RFIIF Amplrl.r
M- Differential Am~mer
5 - High Speed Switch
"c
Ie
IS
=
A-ampere
1st Letter: Polarity
C-bothtypesin
mullipledevrce
N-NPN
P-PNP
I I
1 - Test Frequency
Units for tesl current
IdenblJcationCode
IC
(sat)~_&
Volts
Max
f
~~ ~~::r~ga~~
Common-emitter
DC Current Gam
type numbers
I
ContInuous (DC) Collector Current
hfEj/hFEZ - Current Gain Ratio
VBE - Dillerentlal Base Voltage IVBE1 - VBEZI·
Differential Amplifiers
ton - tum-on time
toft - tum-off time
Rated Mlmmum Collector-Emitter Voltage
Subscript letter Identifies base termination
hsted below In order of preference.
OUtput Capacitance, common-base Shown WIthout distmctlon:
Ccb-Coilector-BaseCapacitance
Cre - Common-Emitter Reverse Transfer Capacitance
SUBSCRIPT:
O-VCEo.open
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-24
/
•
MULTIPLE DEVICES (continued)
TABLE 1. Bipolar Transistors -
Quads
;~
hFEI AVBE
mV
hFE2 Max Min
-TYPE NO.
10
Po
Walts 1!
One ~
Oie ~
Only
%
VCE'
Volts
~
.il
IC
Amp
Max
hFE@IC
Min
'2
::J
IT Cob
MHz
pF
Min Max
Typ' Typ'
ton
ns
Max
toft
ns
Max
Typ'
Typ'
NF
NG
NS
PG
PG
PS
0.65
0.65
0.5
0.65
0.65
0.9
A
A
A
A
A
A
15
40
15
40
40
40
0
0
0
0
0
0
0.05
0.5
0.5
0.6
0.6
1.0
20
100
40
40
100
20
3.0m
150 m
10m
150 m
150 m
500 m
600
200
450
200
200
125
2.0
8.0
4.0
8.0
8.0
25
90
0.5
MHQ3546
MHQ3798
MH04002A
MHQ4013tt
MHQ4014
MHQ6001
PS
PA
NS
NS
NS
CA
0.5
0.5
0.75
0.75
0.75
0.65
A
A
A
A
A
A
12
40
45
40
45
30
0
0
0
0
0
0
0.2
0.05
1.5
1.5
1.5
0.5
30
150
30
35
35
40
10m
0.1 m
500 m
500m
500m
150 m
600
60
200
200
200
200
6.0 0.15' 25'
4.0
10
40
75
10
35
60
10
35
60
8.0
30' 225'
0.25
MHQ6002
MPQ1000
MPQ2221
MPQ2221A
MPQ2222
MPQ2222A
CA
NA
NA
NA
NA
NA
0.65
0.65
0.65
0.65
0.65
0.65
A
A
A
A
A
A
30
20
30
30
30
30
0
0
0
0
0
0
0.5
0.5
0.5
0.5
0.5
0.5
100
50
40
40
100
100
150m
10m
150 m
150 m
150 m
150 m
200
175
200
200
200
200
8.0
8.0
8.0
8.0
8.0
8.0
30' 225'
25'
25'
25'
25'
250'
250'
250'
250'
0.4
0.4
0.4
0.4
MPQ2369
MPQ2483
MPQ2464
MPQ2906
MPQ2906A
MPQ2907
NS
NA
NA
PA
PA
PA
0.5
0.625
0.625
0.65
0.65
0.65
A
A
A
A
A
A
15
40
40
40
60
40
0
0
0
0
0
0
0.5
0.05
0.05
0.6
0.6
0.6
40
150
300
40
40
100
10m
1.0 m
1.0 m
150 m
150 m
150 m
450
50
50
200
200
200
4.0
9.0'
15'
0.25
8.0
8.0
8.0
30' 100'
30' 100'
30' 100'
MPQ2907A
MPQ3303
MPQ3467
MPQ3546
MPQ3725t
MPQ3725A
PA
NS
PS
PA
NS
NS
0.65
0.65
0.75
0.5
1.0
1.0
A
A
A
A
A
A
60
12
40
12
40
50
0
0
0
0
0
0
0.6
1.0
1.0
0.2
1.0
1.0
100
40
20
30
25
30
150 m
300 m
500 m
10m
500 m
500m
200
400
125
600
250
200
8.0
10
25
6.0
10
10
30' 100'
MPQ3762
MPQ3798
MPQ3799
MPQ3904
MPQ3906
MPQ6001
PS
PA
PA
NG
PG
CG
0.75
0.625
0.625
0.5
0.5
0.65
A
A
A
A
A
A
40
40
60
40
40
30
0
O·
0
0
0
0
1.5
0.05
0.05
0.2
0.2
0.5
35
150
300
75
75
40
150 m
0.1 m
0.1 m
10m
10m
150 m
150
60
60
250
200
200
15
4.0
4.0
4.0
4.5
8.0
MPQ6002
MPQ6100
MPQ6100A
MPQ6501
MPQ6502
MPQ6600
CG
CA
CA
CG
CG
CA
0.65
0.5
0.5
0.65
A
A
A
A
0.65 A
0.5 A
30
40
45
30
30
40
0
0
0
0
0
0
0.5
0.05
0.05
0.5
0.5
0.05
100
75
150
40
100
75
150 m
1.0m
1.0m
150 m
1.0m
200
50
50
200
200
50
8.0
4.0
4.0
8.0
8.0
4.0
MPQ6600A
MPQ6700
MPQ6842
MPQ7041
MPQ7042
MPQ7043
CA
CA
CA
NA
NA
NA
0.5
0.5
0.75
0.75
0.75
0.75
A
A
A
A
A
A
45
40
40
150
200
250
0
0
0
0
0
0
0.05
0.2
0.5
0.5
0.5
0.5
150
70
70
25
25
25
1.0 m
10m
10m
1.0 m
1.0m
1.0 m
50
200
300
50
50
50
4.0
4.5
4.5
5.0
5.0
5.0
MPQ7091
MPQ7092
MPQ7093
MQ918
MQ930
MQ982
PA
PA
PA
NA
NA
PA
0.75
0.75
0.75
0.55
0.4
0.4
A
A
A
A
A
A
150
200
250
15
45
50
0
0
0
0
0
0
0.5
0.5
0.5
0.05
0.03
0.6
25
25
35
50
150
40
1.0 m
50
1.0m
50
10m
50
3.0m 600
1.0 m 260'
150 m 200
5.0
5.0
5.0
1.7
6.0
8.0
150m
40
0.4
0.25
0.4
0.4
0.52
0.52
0.52
0.4
0.4
0.5
0.4
0.4
0.4
0.4
15
40
15'
35
3.5
25
90
25'
60
60
0.7
0.5
0.25
0.45
0.45
50
120
0.55
136'
155'
0.2
0.25
30' 225'
0.4
30' 225'
0.4
37*
43'
30' 225'
30' 225'
45
150
0.4
0.4
10
3.0'
10
10
10
10
10
10
10
10
10
10
10
3.0'
2.0'
10
10
10
10
10
10
10
10
10
4.0'
4.0'
10
10
4.0'
0.5
0.5
0.5
0.5
'2
::J
60M
150m
10m
150m
150m
500m
10m
AUO
500m
500m
500m
150m
150m
150m
150m
150m
150 m
150m
10m
AUO
AUO
150m
150m
150m
150m
1.0 A
500m
10m
500m
500m
10
3.0'
2.0'
10
10
10
4.0
4.0
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
1-25
6.0
10
10
10
10
10
0.25
0.25
0.15
0.5
0.5
0.5
tH, HX, and HXV Suffixes also available.
ttMHQ4013 is electrically equivalent to MHQ3725.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
I
Max
dB
Typ'
Ie
VeE
(sat)@_ & Ie
Volts
la
Max
MHQ918
MHQ2222t
MHQ2369
MHQ2906
MHQ2907t
MHQ3467t
25' 250'
9.0' 15'
30' 100'
30' 100'
NF@ f
500m
AUO
AUO
10m
10m
150m
150m
AUO
AUO
150m
150m
AUO
PACKAGE
TOCase
No.
No.
116
116
116
116
116
116
632
632
632
632
632
632
116
116
116
116
116
116
632
632
632
632
632
632
116
632
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
646
1.0m
1.0m
0.5m
20m
20m
20m
646
646
646
10
10
10
6.0
20m
20m
20m
10
150m
646
646
646
607
607
607
10
10
10
10
60 M
646
646
646
•
MULTIPLE DEVICES (continued)
TABLE 1. Bipolar Transistors -
Quads (continued)
hFE1 4.VBE Gp
mV
dB
hFE2 Max Min
-TYPE NO.
10
Po
Walls :5
One i.
Oie 1i
II:
Only
VCE'
Volts
a
'C
!
IC
Amp
Max
hFE@IC
Min
~
tt Cob
MHz pF
Min Max
Typ' Typ'
0
0
30 0
40 0
30 0
30 0
0.5
0.5
0.5
0.5
0.5
0.5
50
100
40
40
100
100
10m
10m
150 m
150 m
150 m
150 m
200
200
200
200
200
200
8.0
8.0
8.0
8.0
8.0
8.0
0
0
0
0
0
0
0.5
0.03
0.6
0.05
1.0
1.0
40
100
100
100
20
50
10m 500
10 u 260'
150 m 300
10m 300
500m 150
100 m 200
4.0
6.0
8.0
6.0
20
10
0
0
30 0
30 0
40 0
13 0
1.5
0.05
0.5
0.6
0.05
0.2
20
150
40
70
50
30
1.0 A 150
100 u 450'
150 m 200
1.0m 200
10m 200
10m 675'
20
4.0
8.0
8.0
6.0
4.0
0
0
0
0.2
0.05
1.5
30
50
20
1.0 m
10m
1.0 A
8.0
6.0
20
MOl120
MOl129
M02218
M02218A
M02219
M02219A
PA
NA
NA
NA
NA
NA
0.4
0.4
0.4
0.6
0.6
0.4
A
A
A
A
A
A
30
30
M02369
M02484
M02905A
M03251
M03467
M03725
NS
NE
PG
PA
PS
NS
0.4
0.4
0.4
0.4
0.4
0.4
A
A
A
A
A
A
15
60
60
40
40
40
M03762
M03798
M06001
M07001
M07003
M07004
PS
PA
CG
PA
NA
NA
0.4
0.4
0.4
0.4
0.4
0.4
A
A
A
A
A
A
M07007
M07021
2N5146
PA
CG
PA
0.4 A
0.4 A
0.4 A
40
60
40
40
40
300
200
150
ton
ns
Max
Typ'
NF@ f
I
toft
ns
Max
Max
dB
Typ'
Ie
VeE
(sat)@_& Ie
Volts
la
Typ'
Max
~
PACKAGE
TOCase
No.
No.
0.1
0.15
0.4
0.4
0.3
0.3
10
10
10
10
10
10
10m
10m
150m
150m
150m
150m
607
607
607
607
607
607
15
20
0.25
42
130
40
45
110
75
0.4
0.25
0.5
0.26
10
3.0
10
10
10
10
10m
AUO
150m
10m
500m
100m
607
607
607
607
607
607
40
110
60
350
1.0
0.2
0.4
0.4
0.35
0.4
10
10
10
10
10
10
1.0 A
1.0m
150m
150m
1.0m
10m
607
607
607
607
607
607
28'
40
72'
110
1.0
0.35
1.0
10
10
10
50m
10m
1.0 A
607
607
607
Some columns show 2 different types of data indicated by either bold or Italic typefaces. See key and headings.
TABLE 2. Bipolar Transistors -
Duals
hFEl 4.VBE Gp
mV
dB
hFE2 Max Min
-TYPE NO.
10
.
Po
Walls :5
One "Ole
Only
J!
VCEVolts
!
IC
Amp
Max
hFE@IC
Min
a
'C
J!
l!
"
fy
Cob
MHz pF
Min Max
Typ' Typ'
ton
ns
Max
toft
ns
Max
NF@ f
Max
dB I
Typ'
Ie
VeE
(sat)@_ & Ie
Volts
la
Max
§
PACKAGE
TOCase
No.
No.
Typ'
Typ'
BFXll
BFX15
BFX36
BFY81
MD708
MD708A
PM
NM
PM
NM
NG
NM
0.4
0.5
0.4
0.4
0.55
0.55
A
A
A
A
A
A
45
40
60
45
15
15
0
0
0
0
0
0
0.05
0.5
0.05
0.03
0.2
0.2
80
60
100
100
40
40
50 m
100 u
10 u
100 u
10 m
10m
130
50
40
60
300
300
8.0
15
6.0
6.0
5.0
5.0
0.8
0.9
0.9
0.8
35
0.9
5.0
5.0
3.0
10
75
5.0
0.25
1.0
0.25
0.35
0.2
0.2
20
10
20
10
10
10
50 m
1.0m
10m
1.0m
10m
10m
M0708AF
M0708B
MD708BF
MD918
MD918A
M0918AF
NM
NM
NM
NF
NM
NM
0.35
0.55
0.35
0.55
0.55
0.35
A
A
A
A
A
A
15
15
15
15
15
15
0
0
0
0
0
0
0.2
0.2
0.2
0.05
0.05
0.05
40
40
40
50
50
50
10m
10 m
10m
3.0 m
3.0 m
3.0 m
300
300
300
600
600
600
5.0
5.0
5.0
1.7
1.7
1.7
0.9
0.8
0.8
5.0
10
10
0.2
0.2
0.2
0.9
0.9
5.0
5.0
10
10
10
6.0
6.0
6.0
10m
10m
10m
60 M
60 M
60 M
610A
654
610A
654
654
610A
MD918B
MD918BF
MD982,F
MD984
MD985
M0986
NM
NF
PA
PA
CA
CA
0.55
0.35
0.4
0.575
0.575
0.55
A
A
A
A
A
A
15
15
50
20
30
15
0
0
0
0
0
0
0.05
0.05
0.6
0.2
0.5
0.2
50
50
40
25
40
25
3.0m
3.0m
150 m
10m
150 m
10m
600
600
200
250
200
200
1.7
1.7
8.0
0.8
10
0.5
0.5
0.5
0.3
6.0
6.0
10
10
10
10
60 M
60 M
150m
50m
150m
10m
654
610A
610A
654
654
654
MD1120F
MD1121
MD1121F
MD1122
MD1122F
MD1123
NM
NM
NM
NM
NM
PM
0.35
0.575
0.35
0.575
0.35
0.575
A
A
A
A
A
A
30
30
30
30
30
40
0
0
0
0
0
0
0.5
0.5
0.5
0.5
0.5
0.2
50
50
50
50
50
30
10m
10m
10m
10m
20 m
100 u
200
200
200
200
200
250
8.0
8.0
8.0
8.0
8.0
4.0
0.1
0.1
0.1
0.1
0.1
0.25
10
10
10
10
10
10
10m
10m
10m
10m
10m
10m
610A
654
654
654
654
654
8.0
4.0
0.8
0.9
0.9
0.9
0.9
0.8
10
10
10
5.0
5.0
10
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-26
78
78
78
78
654
654
654
654
654
654
•
MULTIPLE DEVICES (continued)
TABLE 2. Bipolar Transistors -
Duals (continued)
hFEI ..1VBE
Gp
- - mV
hFE2 Max
dB
Min
10
Watts ~
One ..
Die ~
Only
VCE'
:g.
Volts!
.il
hFE@IIC§
Min
IT
Cob
MHz
pF
Max
Typ' Typ'
ton
ns
Max
Typ'
toft
ns
Max
Typ'
Min
VeE
Ie
(sat)@ & Ie
Volts
Ie
Max
§
PACKAGE
TO·
Case
No.
No.
4.0
4.0
1.7
15
8.0
8.0
0.9
0.9
0.9
0.9
60
45
5.0
5.0
5.0
5.0
350
310
0.25
0.25
0.4
0.1
0.4
0.3
10
10
10
B.O
10
10
10 m
10m
10m
10m
150 m
150 m
654
610A
654
610A
654
654
0.5
0.5
0.5
0.5
0.5
0.5
40
40
100
100
100
40
150
150
150
150
150
10
m
m
m
m
m
m
200
200
200
200
200
500
B.O
8.0
B.O
8.0
8.0
4.0
45
60
60
45
45
15
310
350
350
310
310
20
0.3
0.4
0.4
0.3
0.3
0.25
10
10
10
10
10
10
150 m
150m
150 m
150m
150m
10m
610A
610A
654
654
610A
654
0.5
0.5
0.5
0.5
0.6
0.6
40
40
40
40
40
40
10
10
10
10
150
150
m
m
m
m
m
m
500
500
500
500
200
200
4.0
4.0
4.0
4.0
B.O
8.0
0.9
0.9
0.8
0.8
45
45
5.0
5.0
10
10
130
130
0.25
0.25
0.25
0.25
0.4
0.4
10
10
10
10
10
10
10m
10m
10 m
10m
150m
150m
654
610A
654
610A
0
0
0
0
0.6
0.6
0.6
0.6
0.6
0.2
40
40
100
100
100
50
150
150
150
150
150
1.0
m
m
m
m
m
m
200
200
200
200
200
200
B.O
8.0
8.0
8.0
8.0
6.0
45
45
45
45
45
130
130
130
130
130
0.4
0.4
0.4
0.4
0.4
0.25
10
10
10
10
10
10
150 m
150 m
150m
150 m
150 m
10m
610A
610A
654
654
610A
654
40
40
40
40
40
40
0
0
0
0
0
0
0.2
0.2
0.2
0.2
0.2
0.2
50
50
100
100
100
100
1.0 m
1.0 m
1.0 m
1.0m
1.0 m
1.0 m
200
200
250
250
250
250
6.0
6.0
6.0
6.0
6.0
6.0
0.9
0.9
5.0
5.0
0.9
0.9
5.0
5.0
0.25
0.25
0.25
0.25
0.25
0.25
10
10
10
10
10
10
10 m
10m
10m
10m
10m
10m
654
610A
654
654
610A
610A
A
A
A
A
A
A
30
30
40
40
40
40
0
0
0
0
0
0
0.5
0.5
1.0
1.0
1.5
50
50
20
50
50
20
10 m 200
10 m 200
500 m 150
100 m 200
100 m 200
1.0 AlSO
8.0
B.O
20
10
10
20
0.8
0.9
40
45
45
40
10
10
110
75
75
110
0.15
0.15
0.5
0.26
0.26
1.0
10
10
10
10
10
10
10m
10m
500 m
100m
100 m
1.0 A
654
654
654
654
610A
654
A
A
A
A
A
A
40
15
15
15
30
30
0
0
0
0
0
0
1.5
0.05
0.05
0.05
0.5
0.5
20
20
20
20
40
40
1.0
3.0
3.0
3.0
150
150
AlSO
m 600
m 600
m 600
m 200
m 200
20
1.7
1.7
1.7
B.O
8.0
40
110
10
0.9
0.8
60
60
5.0
10
350
350
1.0
15
15
15
0.4
0.4
10
10
1.0 A
200 M
200 M
200 M
150 m
150 m
610A
654
654
654
654
610A
60
60
350
350
0.4
0.4
0.4
0.25
0.25
0.4
10
10
10
10
10
10
150 m
150 m
150m
1.0 m
10m
150 m
654
610A
654
654
610A
654
0.4
0.4
0.35
0.35
0.35
0.35
10
10
10
10
10
10
150m
150m
10m
10m
10m
1.0m
654
610A
654
654
654
654
0.575
0.35
0.3
0.35
0.575
0.575
A
A
A
A
A
A
40
40
15
60
30
30
0
0
MD2218AF
MD221BF
MD2219
MD2219A
MD2219AF
MD2369
NG
NG
NG
NG
NG
NS
0.35
0.35
0.575
0.575
0.35
0.55
A
A
A
A
A
A
30
30
30
30
30
15
0
0
0
MD2369A
MD2369AF
MD2369B
MD2369BF
MD2904
MD2904A
NM
NM
NM
NM
PG
PG
0.55
0.35
0.55
0.35
0.575
0.575
A
A
A
A
A
A
15
15
15
15
40
60
0
MD2904AF
MD2904F
MD2905
MD2905A
MD2905AF
MD3250
PG
PG
PG
PG
PG
PA
0.35
0.35
0.575
0.575
0.35
0.575
A
A
A
A
A
A
60
40
40
60
60
40
0
0
MD3250A
MD3250AF
MD3251
MD3251A
MD3251AF
MD3251F
PM
PM
PA
PM
PM
PA
0.575
0.35
0.575
0.575
0.35
0.35
A
A
A
A
A
A
MD3409
MD341 0
MD3467
MD3725
MD3725F
MD3762
NM
NM
0.575
0.575
0.6
0.6
0.35
0.6
PS
PS
PH
IC
Amp
Max
200
200
600
100
200
200
PM
PM
NM
NM
NG
NG
PS
I
100 1100 U
100 100 U
50
1.0 m
30
0.1 m
40 150 m
40 150 m
MD1130
MD1130F
MD1132
MD2060F
MD2218
MD221BA
NS
NS
dB
Max
Typ'
Po
TYPE NO.
NF @ f
0
0
0
0
0
0
0
0
0
0
0
0
0.2
0.2
0.05
0.5
0.5
0.5
1.4
MD3762F
MD5OO0
MD5000A
MD5000B
MD6001
MD6001F
PM
PM
CG
CG
0.35
0.3
0.3
0.3
0.575
0.35
MD6002
MD6002F
MD6003
MD6100
MD6100F
MD7000
CG
CG
CA
CA
CA
NA
0.575
0.35
0.575
0.5
0.35
0.575
A
A
A
A
A
A
30
30
30
45
45
30
0
0
0
0
0
0
0.5
0.5
0.5
0.05
0.05
0.5
100
100
70
100
100
70
150
150
150
0.1
0.1
150
m
m
m
m
m
m
200
200
200
30
30
200
8.0
8.0
B.O
4.0
4.0
8.0
MD7001
MD7001F
MD7002
MD7002A
MD7002B
MD7003
PA
PA
NA
NM
NM
NA
0.6
0.35
0.575
0.575
0.575
0.55
A
A
A
A
A
A
30
30
40
40
40
40
0
0
0
0
0
0
0.6
0.6
0.03
70
70
40
40
40
50
150
150
100
100
100
10
m
m
u
u
u
m
200
200
200
200
200
200
B.O
B.O
6.0
6.0
6.0
6.0
0.03
0.03
0.05
0.75
0.85
25
15
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-27
654
654
•
MULTIPLE DEVICES (continued)
TABLE 2. Bipolar Transistors -
Duals (continued)
hFE1 .:iVBE Gp
mV
dB
hFE2 Max Min
-TYPE NO.
10
Po
Watts
One
1i
Die a:
Only
~
VCEVolts
f
IC
Amp
Max
0.05
0.05
0.05
0.2
0.05
0.2
.i!
IT
A
A
A
A
A
A
40
40
0
0
0
0
0
0
MD7oo7A
MD7007B
MD7007BF
MD7007F
MD7021
MD7021F
PM
PM
PM
PA
CG
CG
0.575
0.575
0.35
0.35
0.55
0.35
A
A
A
A
A
A
50
60
40
40
40
40
0
0
0
0
0
0
0.2
0.2
0.2
0.2
0.05
0.05
30
30
30
30
50
50
MDBOOI
MDB002
MDB003
2N2060
2N2223
2N2223A
NM
NM
NM
NM
NM
NM
0.575
0.575
0.575
0.5
0.5
0.5
A
A
A
A
A
A
40
0.03
0.03
0.03
0.5
0.5
0.5
100
100
100
30
25
25
2N2453
2N2453A
2N2480A
2N2639
2N2640
2N2641
NM
NM
NM
NM
NM
NE
0.5
0.5
0.3
0.3
0.3
0.3
A
A
A
A
A
A
30
50
40
45
45
45
0
0
0
0
0
0
0
0
0
0
0
0
0.05
0.05
0.5
0.03
0.03
0.03
BO
BO
50
50
50
2N2642
2N2643
2N2644
2N2652
2N2652A
2N2721
NM
NM
NE
NM
NM
NM
0.3
0.3
0.3
0.3
0.3
0.3
A
A
A
A
A
A
45
45
45
60
60
60
0
0
0
0
0
0
0.03
0.03
0.03
0.5
0.5
0.04
2N2722
2N2903
2N2903A
2N2913
2N2914
2N2915
NM
NM
NM
NE
NE
NM
0.3
0.6
0.6
0.3
0.3
0.3
A
C
C
A
A
A
45
30
0
0
0
0
0
0
2N2916
2N2917
2N2918
2N2919
2N2920
2N3043
NM
NM
NM
NM
NM
NM
0.3
0.3
0.3
0.3
0.3
0.25
A
A
A
A
A
A
45
2N3044
2N3045
2N304B
2N3726
2N3727
2N3806
NM
NE
NE
PE
PE
PE
0.25
0.25
0.25
0.4
0.4
0.5
2N3807
2N3808
2N3B09
2N381 0
2N3810A
2N3811
PE
PM
PM
PM
PM
PM
0.5
0.5
0.5
0.5
0.5
0.5
60
60
60
0.75
0.75
0.85
25
25
15
0.3S
0.3S
0.3S
0.4
0.4
1.0
300
300
300
300
200
200
B.O
B.O
B.O
B.O
6.0
6.0
0.75
0.85
0.85
20
10
10
28'
28'
72'
72'
1.0
1.0
1.0
1.0
0.35
0.35
1.0m 260'
1.0m 260'
1.0m 260'
100 u
60
100 u
50
100 u
50
2.6'
2.6'
2.6'
15
15
15
0.9
0.8
0.9
15
15
15
5.0
15
5.0
1.0m
1.0m
1.0 m
1.0 m
10m
10m
0.55
0.35
0.55
0.55
0.55
0.575
40
40
6.0
6.0
6.0
4.0
3.0
B.O
10m 200
10m 200
10m 200
10m 675'
3.0 m 650
1.0m 300
NM
NM
NM
NA
PA
PA
40
13
12
toft
ns
Max
Typ'
50
50
50
30
30
30
MD7003A
MD7003AF
MD7003B
MD7004
MD7005
MD7007
40
ton
rls
Cob
pF
Max
Typ·
'i! MHz
::>
I
Max
dB
Typ·
Ie
VeE
(sat)@_& Ie
Volts
18
Max
Typ'
Min
Typ.
hFE@IC
Min
NF@ f
'i!
PACKAGE
TOCase
No.
No.
10
10
10
10
10
10
1.0m
1.0m
1.0m
10m
10m
SOm
654
610A
654
654
654
654
10
10
10
10
10
10
SOm
SOm
SOm
SOm
10m
10m
654
654
610A
610A
654
610A
::>
Max
1.2
1.2
8.0
10
10
1000 H
SOm
SOm
7B
78
7B
654
654
654
654
654
654
7.0
4.0
10
4.0
4.0
4.0
1000 H
1000 H
SOm
AUO
AUO
AUO
7B
78
78
7B
7B
78
654
654
654
654
654
654
4.0
4.0
4.0
10
8.0
10
AUO
AUO
AUO
50m
1000 H
10m
7B
7B
7B
7B
7B
78
654
654
654
654
654
654
10m
1000 H
1000 H
AUO
AUO
AUO
78
78
7B
654
654
654
654
654
654
60
60
50
BO
BO
BO
B.O
8.0
lB
B.O
B.O
B.O
0.9
0.9
0.8
0.9
0.8
3.0
3.0
5.0
5.0
10
50
10 u
10 u
1.0 m
10 u
10 u
10 u
100
100
100
50
50
30
10 u
10 u
10 u
1.0m
1.0 m
0.1 m
BO
80
BO
60
60
80
B.O
8.0
8.0
15
15
6.0
0.9
0.8
5.0
10
0.85
0.9
0.8
3.0
3.0
10
0.04
0.05
0.05
0.03
0.03
0.03
50
125
125
60
150
60
1.0 u
1.0m
1.0m
10 u
10 u
10 u
100
60
60
60
60
60
6.0
8.0
B.O
6.0
6.0
6.0
0.9
0.8
0.9
5.0
10
5.0
0.9
5.0
20
7.0
7.0
4.0
3.0
4.0
45
60
60
45
0
0
0
0
0
0
0.03
0.03
0.03
0.03
0.03
0.03
150
60
150
60
150
100
10
10
10
10
10
10
u
u
u
u
u
u
60
60
60
60
60
30
6.0
6.0
6.0
6.0
6.0
B.O
0.9
0.8
0.8
0.9
0.9
0.9
5.0
10
10
5.0
5.0
5.0
3.0
4.0
3.0
4.0
3.0
5.0
AUO
AUO
AUO
AUO
AUO
AUO
654
654
654
654
654
610A
A
A
A
A
A
A
45
45
45
45
45
60
0
0
0
0
0
0
0.03
0.03
0.03
0.3
0.3
0.05
100
100
50
135
135
150
10 u
10 u
10 u
1.0m
1.0 m
0.1 m
30
30
30
200
200
100
B.O
8.0
B.O
B.O
B.O
4.0
0.8
10
0.9
0.9
5.0
2.5
5.0
5.0
5.0
4.0
4.0
7.0
AUO
AUO
AUO
1000 H
1000 H
100 H
610A
610A
610A
654
654
654
A
A
A
A
A
A
60
60
60
60
60
60
0
0
0
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
300
150
300
150
150
300
0.1
0.1
0.1
0.1
0.1
0.1
100
100
100
100
100
100
4.0
4.0
4.0
4.0
4.0
4.0
0.8
0.8
0.9
0.95
0.9
5.0
5.0
3.0
1.5
3.0
4.0
7.0
4.0
7.0
3.0
4.0
100
100
100
100
100
100
30
45
45
45
45
m
m
m
m
m
m
1.3
1.2
1.0
1.0
Some columns show 2 different types of data Indicated by either bold or italIC typefaces. See key and headings.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-28
H
H
H
H
H
H
654
654
654
654
654
654
•
MULTIPLE DEVICES (continued)
TABLE 2 Bipolar Transistors -
Duals (continued)
hFEI AVBE G p
mV
dB
hFE2 Max Min
-TYPE NO.
10
Po
Watts 1;
One
Die
Only
....
l
VCEVolls
IC
Amp
Max
hFE@IC
0.05
0.05
0.05
0.05
0.6
0.3
1
UI
2N3811A
2N3813
2N3816A
2N3817
2N3838
2N4015
PM
PA
PM
PM
CE
PM
0.5
0.5
0.5
0.5
0.25
0.4
A
A
A
A
A
A
60
60
60
60
40
60
0
0
0
2N4016
2N4854
2N4855
2N4937
2N4938
2N4939
PM
CE
CE
PM
PM
PE
0.4
0.3
0.3
0.6
0.6
0.6
A
A
A
A
A
A
60
40
40
40
40
40
0
0
0
0
0
0.3
0.6
0.6
0.05
0.05
0.05
2N4941
2N5793
2N5794
2N5795
2N5796
2N6502
PM
NG
NG
NG
NG
NS
0.6
0.5
0.5
0.5
0.5
0.6
A
A
A
A
A
A
40
40
40
60
60
40
0
0
0
0
0
0
0.05
0.6
0.6
0.6
0.6
1.0
0
0
0
0
iT
!
MHz
Min
Typ'
Cob
pF
Max
Typ'
ton
ns
Max
Typ'
toft
ns
Max
Typ'
300
300
150
300
100
135
0.1 m
0.1 m
0.1 m
0.1 m
150m
1.0m
100
100
100
100
200
200
4.0
4.0
4.0
4.0
8.0
8.0
0.95
1.5
0.95
0.9
50
0.9
1.5
3.0
340
5.0
135
100
40
50
50
50
1.0m
150m
150 m
1.0m
1.0m
1.0m
200
200
200
300
300
300
8.0
8.0
8.0
5.0
5.0
5.0
0.9
60
60
0.9
0.8
2.5
350
350
3.0
5.0
50
40
100
40
100
50
1.0m
150 m
150 m
150m
150 m
100 m
300
200
200
200
200
250
5.0
8.0
8.0
8.0
8.0
10
0.9
3.0
310
310
140
140
60
Min
I
45
45
47
47
35
NF@ f
I
Max
dB
Typ'
Ie
VeE
(sat)@_& Ie
Volts
18
Max
1!!
:0
PACKAGE
TOCase
No.
No.
1.5
2.5
7.0
4.0
8.0
4.0
100
AUO
100
100
1000
1000
4.0
8.0
8.0
4.0
4.0
40
1000 H
l000H
1000 H
AUO
AUO
AUO
654
654
654
654
654
654
4.0
10
10
10
10
10
AUO
150m
150m
150m
150m
100m
610A
654
654
654
654
654
0.3
0.3
0.4
0.4
0.3
H
H
H
H
H
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
Surface Mount Multiples
TABLE 3. Quad Transistors
hFE
Device
MMPQ2222
MMP02222A
MMP02907
MMP02907A
MMP03467
MMP03725
MMP03725A
MMP03762
V(BR)CEO
40
40
40
50
40
40
50
40
V(BR)CBO
60
75
Min
@IC
30
40
30
50
20
25
30
20
300
500
300
500
500
500
500
1000
60
40
60
70
40
40
iT Min@mA
350'
350'
350'
350'
125
250
200
150
*Typ
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-29
20
20
50
50
50
50
50
50
Package
50-16
50-16
50-16
50-16
50-16
50-16
50-16
50-16
654
610A
610A
610A
610A
654
•
MULTIPLE DEVICES (continued)
FETs
TABLE 4. TMOS FETs ....... Quads
N-CHANNEL TMOS QUAD -
CASE 646-06 (14-PIN DIP)
V(BR)OSS
Ciss
Crss
Ion
loft
Max
V
Min
pF
Max
pF
Max
ns
Max
ns
Max
1.0
3.5
35
70
18
15
15
1.0
3.5
60
70
18
15
15
0.8
2.0
36
50
10
5.0
5.0
-
10
35
-
-
10
10
1.0
3.5
90
70
18
15
15
0.8
2.0
35
50
10
5.0
5.0
0.8
2.4
90
50
16
5.0
5.0
0.2
0.8
3.0
60
-
-
10
10
6.2
0.2
1.0
4.0
200
90
3.5
15
15
MFQ107AP
6.4
0.25
1.0
3.0
200
90
3.5
-
-
MFQ107P
14
0.2
1.0
3.0
200
90
3.5
-
-
VGS(lh)
V
rOSlon)
Max
@
10
A
Min
MFQ930P
1.4
1.0
MFQ960P
1.7
1.0
MFQ6659P
1.8
1.0
MFQ1000P
2.0
0.5
MFQ990P
2.0
1.0
MFQ6660P
3.0
1.0
MFQ6661P
4.0
1.0
MFQ170P
5.0
MFQ9200P
0
Device
N-CHANNEL TMOS QUAD rOS(on)
@
CASE 648-06 (16-PIN DIP)
10(on)
VGS = 10 V
VOS = 5.0 V
Amp
V(BR)OSS
Voll
0
Ciss
@25V
pF
Max
Coss
@25V
pF
Max
C rss
@25V
pF
Max
leI(on)
Ir
Id(off)
If
mhos
Min
@
5.0 V
Amp
ns
Max
ns
Max
ns
Max
ns
Max
Gfs
Device
Max
mA
Min
IRFEll0
0.6
800
100
1.0
0.8
0.8
200
100
25
20
25
25
20
IRFE113
0.8
800
60
0.8
0.8
0.8
200
100
25
20
25
25
20
Diode Array and Dual Diodes
Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast switching
requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost, higher reliability
and space savings. The MMAD Series in surface mount packages maximize board packing density.
TABLE 5_ Diode Arrays
Pin Connections
Device
Function
Package
Diagram No.
MAD130C
MAD130P
MMAD130
Dual 10 Diode Array
Dual 10 Diode Array
Dual 10 Diode Array
632-02
646-06
751A-02
1
1
2
MADll03C
MADll03F
MADll03P
MMAD1103
16
16
16
16
632-02
606-04
646-06
751A-02
3
4
3
3
MADll04C
MADll04F
MADll04P
MMADll04
Dual
Dual
Dual
Dual
632-02
607-04
646-06
751A-02
5
5
5
5
MADll05C
MADll05F
MADll05P
MMADll05
8
8
8
8
632-02
606-04
646-06
751A-02
6
7
6
6
Diode
Diode
Diode
Diode
8
8
8
8
Array
Array
Array
Array
Diode
Diode
Diode
Diode
Diode
Diode
Diode
Diode
Array
Array
Array
Array
Common
Common
Common
Common
Cathode
Cathode
Cathode
Cathode
Array
Array
Array
Array
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-30
MULTIPLE DEVICES (continued)
TABLE 5. Diode Arrays (continued)
Pin Connections
Device
Function
Diode
Diode
Diode
Diode
Package
Diagram No.
632·02
606·04
646·06
751A·02
8
9
8
8
632-02
607-04
646-06
751A-02
10
10
10
10
Array
Array
Array
Array
620-02
650-02
648-06
751B-03
11
11
11
11
Array
Array
Array
Array
632-02
607-04
646-06
751A-Q2
12
12
12
12
751-02
13
MADll06C
MADll06F
MADll06P
MMADll06
8
8
8
8
MADll07C
MADll07F
MADll07P
MMADll07
Dual
Dual
Dual
Dual
MADll08C
MADll08F
MADll08P
MMADll08
8
8
8
8
Isolated
Isolated
Isolated
Isolated
Diode
Diode
Diode
Diode
MADll09C
MADll09F
MADll09P
MMADll09
7
7
7
7
Isolated
Isolated
Isolated
Isolated
Diode
Diode
Diode
Diode
MMADII85
7 Diode Common Cathode Array
8
8
8
8
Common
Common
Common
Common
Diode
Diode
Diode
Diode
Anode
Anode
Anode
Anode
Array
Array
Array
Array
Array
Array
Array
Array
TABLE 6. Dual Diodes
Device
MSD61 00
MSD6101
MSD6102
MSD6150
Diagram
No.
V(BR)
Volls
Min
14
14
14
14
100
50
70
70
@ I(BR)
A
100
100
100
100
IR
@ VR
A
Volls
Max
0.67/0.82
0.67/0.82
0.67/1.0
-/1.0
50
0.1
0.1
0.1
0.1
VF
Voila @ IF
MiniMax
rnA
40
50
50
C
@VR=O
pF (Max)
Irr
ns
Max
1.5
2.0
3.0
8.0
4.0
10
100
100
10
10
10
10
Packaga
TO-226AA
Diode Array Diagrams
1
5
Dual 10
Diode
Array
Dual 8
Diode
Array
2
Dual 10
Diode
Array
16
Diode
Array
4
8 Diode
Array
(Common
Calhode)
®11111111
NC Pin 1, 4, 6, 10. 13
7
8 Diode
Array
(Common
Cathode)
®11111111
8 Diode
Array
(Common
Anode)
®IIIIIIIl
NC Pin 1
8
Ne PIn 1, 4, 6, 10, 13
9
HI
Diode
Array
NC Pin 4, 6, 10, 13
Dual8
Diode
Array
8 Diode
Array
(Common
Anode)
®11111111
NCPin 1
11
Isolated
8 Diode
Array
IIII111I
12
Isolated
7 Diode
Array
7 Diode
Array
(Common
Cathode)
Dual
Diode
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-31
.00:
NC Pin 6,13
6
'm
3
]B'
10
III!1!I
13
01II1Il!
14
m
I
2 3
•
•
Surface Mount Devices
A wide variety of discrete components from Motorola's
repertoire of reliability-proven semiconductor processes and
geometries are available in the SOT-23 packages. Products
include Bipolar and Field-Effect Transistors, Switching, Zener
and Varactor Diodes. This package is capable of holding a 25
mil x 25 mil maximum die size.
CASE 318
TO-236AA
TO-236AB
SOT-23 Bipolar Transistors
TABLE 1. General-Purpose Transistors
Pinout: 1-8ase, 2-Emitter, 3-Collector
Devices are listed in order of descending breakdown voltage.
Device
NPN
BC846A
BC846B
BSS82B
BC817-16
BC817-25
lA
lB
CH
6A
6B
65
65
60
45
45
110
200
40
100
160
220
450
120
250
400
2
2
150
100
100
100
100
100
200
200
BC817-40
BC847A
BC847B
BC847C
BCX70K
6C
lE
IF
lG
AK
45
45
45
45
45
250
110
200
420
100
600
220
450
800
100
2
2
2
50
200
100
100
100
125
BCX70J
BCW72
BCX70H
BCX70G
MMBT930
AJ
K2
AH
AG
lX
45
45
45
45
45
90
200
70
60
150
50
2
50
50
0.5
125
125
30
BCW71
BCX19
MMBC1623L7
MMBC1623L6
MMBC1623L5
Kl
Ul
L7
L6
L5
45
45
40
40
40
110
40
300
200
135
2
500
1
1
1
200
200
200
200
. BSS79C
MMBT2222A
MMBT3904
MMBT4401
MMBC1623L4
CF
lP
lA
2X
L4
40
40
40
40
40
100
40
30
40
90
300
150
500
100
500
1
250
200
200
250
200
MMBC1623L3
MMBT3903
BSS79B
MMBTA20
MMBT4123
L3
lY
CE
lC
5B
40
40
40
40
30
60
15
40
40
25
120
1
100
150
5
50
200
250
250
125
250
MMBC1622D8
MMBC1622D7
MMBC1622D6
BCW60A
BCW60D
D8
D7
D6
AA
AD
35
35
35
32
32
450
300
200
60
100
900
600
400
0.5
0.5
0.5
50
50
100
100
100
125
125
BCW65A
BCW60C
BCW65C
BCW60B
BCW65B
EA
AC
EC
AB
EB
32
32
32
32
32
100
90
100
70
60
250
100
50
500
50
500
100
125
100
125
100
BC848A
BC848B
BC848C
MMBT2222
MMBC1009Fl
lJ
lK
lL
lB
Fl
30
30
30
30
25
110
200
420
30
30
220
450
800
2
2
2
500
0.5
leO
100
100
250
150
MMBC1009F3
BC818-16
BC818-25
BC818-40
BCX20
BCW33
BCW31
F3
6E
6F
6G
U2
D3
Dl
25
25
25
25
25
20
20
60
100
160
250
100
420
110
120
250
400
600
600
0.5
100
100
100
100
2
2
150
200
200
200
-'
450
220
220
-
600
400
270
-
-
180
120
400
-
-
-
-
60
-
220
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-32
125
-
-
-
SURFACE MOUNT -
•
SOT-23 TRANSISTORS (continued)
TABLE 1. General-Purpose Transistors (continued)
Device
PNP
MMBT8599
BCB56A
BCB56B
MMBT859B
B5582C
2W
3A
3B
2K
CM
80
65
65
60
60
75
125
220
75
100
MMBT2907A
MMBA811C8
BC807-16
BC807-25
BC807-40
2F
C8
5A
5B
5C
60
45
45
45
45
50
450
100
160
250
BC857A
BC857B
BC857C
BCX71K
MMBA811C7
3E
3F
3G
BK
C7
45
45
45
45
45
125
220
420
100
300
500
400
260
250
475
-
300
-
900
250
400
600
250
475
800
-
600
100
2
2
100
150
150
100
100
150
100
500
5
100
100
100
200
50
200
200
200
2
2
2
50
5
100
100
100
50
2
5
500
5
-
50
100
50
100
100
100
-
50
BCX71J
BCW70
MMBA811C6
BCW68G
MMBA811C5
BJ
H2
C6
DG
C5
45
45
45
45
45
100
215
200
60
135
BCW69
BCX71G
BCW6BF
BCX17
MMBA81354
H1
BG
DF
T1
54
45
45
45
45
45
120
60
35
100
100
600
200
2
50
500
100
50
MMBA81353
MMBA81352
MMBA812M7
MMBA812M6
MMBA812M5
53
52
M7
M6
M5
45
45
40
40
40
75
50
300
200
135
150
100
600
400
270
50
50
1
1
1
100
100
150
150
150
MMBT2907
MMBT3906
MMBT4403
MMBA812M4
MMBA812M3
2B
2A
2T
M4
M3
40
40
40
40
40
30
100
100
90
60
300
300
180
120
-
500
10
150
1
1
200
250
200
150
150
B5580B
B55BOC
MMBTA70
BCW61D
BCW61C
CH
CJ
2C
BD
BC
40
40
40
32
32
40
100
40
110
100
120
30
400
150
150
5
50
50
200
200
125
BCW67C
BCW61B
BCW67B
BCW61 A
BCW67A
EC
BB
DB
BA
DA
32
32
32
32
32
100
80
60
60
35
-
100
-
500
50
500
50
500
BC808-16
BC808-25
BC808-40
BC858A
BC858B
5E
5F
5G
3J
3K
25
25
25
30
30
100
160
250
125
220
250
400
600
250
475
100
100
100
2
2
200
200
200
100
100
BC85BC
MMBT4125
BCX18
MMBTA55
BCW30
BCW29
3L
ZD
T2
AL
C2
C1
30
30
25
25
20
20
420
25
40
30
215
120
800
2
50
500
500
2
2
100
200
-
270
-
-
-
-
-
500
260
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-33
-
-
100
-
100
-
100
-
•
.SURFACE MOUNT -
SOT-23 TRANSISTORS (continued)
TABLE 2. Switching Transistors
Pinout: 1·88se, 2·Emitter, 3·Collector
NPN
MMBT2369
BSV52
MMBT2222
MMBT2222A
MMBT4401
MMBT3903
MMBT3904
lJ
B2
lB
lP
2X
IV
lA
12
12
35
35
35
70
70
18
18
365
385
255
225
2SO
15
12
30
40
40
40
40
20
40
30
40
40
15
BN
AM
2J
2T
2B
2F
2A
75
75
25
35
45
45
70
170
170
35
225
25
25
12
40
40
20
20
20
90
30
50
100
30
-
-
100
10
500
500
500
100
100
120
-
400
250
200
250
2SO
200
PNP
MMBT3638A
MMBT3638
MMBT3640
MMBT4403
MMBT2907
MMBT2907A
MMBT3906
100
100
300
60
40
-
-
300
300
-
-
so
180
500
150
200
200
1
500
SOO
10
300
250
TABLE 3. VHF/UHF Amplifiers, Mixers, Oscillators
Pinout: 1·8ase, 2·Emitter, 3·Collector
Cob
Device
Marking
V(BRICEO
Max (pFI
Min (GHzl
@ IC (mAl
IT
2
2
1.6
1.6
0.7
1.8
1.8
0.65
0.6
0.6
30
30
4
2
2
1.8
1.7
2
4
8
5
NPN
MMBT3960A
MMBT3960
MMBTH10
MMBCI32103
MMBC132104
15
3E
03
04
8
3
25
25
25
MMBC132105
MMBT918
MMBTH24
05
3B
3A
25
15
30
0.36
0.6
0.6
0.4
3D
20
0.85
0.6
PNP
I MMBTH81
TABLE 4. Choppers
Pinout: 1·8ase, 2·Emitter, 3-Collector
DevIce
PNP
I
MMBT404
MMBT404A
2M
2N
12
25
24
35
30
30
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
1·34
400
400
12
12
SURFACE MOUNT -
•
SOT-23 TRANSISTORS (continued)
TABLE 5. Darlingtons
Pinout: 1-Base. 2-Emitter. 3-Collector
Devices are listed in order of descending hFE.
Device
MMBTA14
MMBT6427
MMBTA13
MMBTA64
MMBTA63
TABLE 6. Low-Noise Transistors
Pinout: 1-Base. 2-Emitter. 3-Collector
Devices are listed in order of ascending NF.
Device
NPN
MMBT5088
MMBT5089
MMBT2484
MMBT6428
MMBT6429
lQ
1R
1U
1K
1L
1
1
3
3
3
30
30
60
50
45
300
400
2P
2Q
2B
2C
2F
2G
4A
4B
4C
4E
4F
4G
1
1
4"
4"
4'
4"
4"
4'
4"
4'
4"
4'
50
50
30
30
45
45
30
30
30
45
45
45
-
-
-
800
250
500
-
150
250
200
420
200
420
100
200
420
100
200
420
450
800
450
800
220
450
800
220
450
800
-
10
10
10
10
10
50
50
15
100
100
10
10
2
2
2
2
2
2
2
2
2
2
40
40
100
100
100
100
100
100
100
100
100
100
PNP
MMBT5086
MMBT5087
BC849B
BC849C
BC850B
BC850C
BC859A
BC859B
BC859C
BC860A
BC860B
BC860C
-
-
*Max
TABLE 7. High-Voltage Transistors
Pinout: 1-Base. 2-Emitter. 3-Collector
Devices are listed in order of descending breakdown voltage.
Device
NPN
MMBT6517
MMBTA42
MMBTA43
MMBC1654N5
MMBC1654N6
MMBC1654N7
MMBT5550
MMBT5551
1Z
lD
1E
N5
N6
N7
1F
G1
350
300
200
160
160
160
160
160
15
40
40
50
100
150
30
30
--
130
220
330
-
PNP
MMBT6520
MMBTA92
MMBTA93
MMBT5401
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-35
100
30
30
15
15
15
50
50
40
50
50
120
120
120
100
100
•
SURFACE MOUNT -
SOT·23 TRANSISTORS (continued)
TABLE 8. Drivers
Pinout: 1·Base, 2·Emitter, 3-Collector
Devi..
MMBTA06
BSS64
MMBTA05
PNP
BSS63
MMBTA55
MMBTA56
TABLE 9. RF Transistors
Pinout: 1-Base, 2-Emitter, 3-Collector
Devices are listed in order of descending
fT.
NPN
MMBR571
MMBR911
MMBR930
BFR92
BFR93
7X
7P
7C
P1
R1
8
6
5.5
3
3
50
30
30
14
30
10
10
5
10
5
2
2
1.9
3
2.5
5
10
2
3
2
6
10
5
1.5
5
16.5'
17'
11
-
MMBR931
MMBR2060
MMBR5179
MMBR920
MMBR901
70
7E
7H
7B
7A
3.5
2.5
1.5
4.5
4
1
20
5
14
15
1
1
6
10
10
4.3
2
4'
2.4
1.9
0.5
1.5
1.5
2
5
1
10
6
10
6
MMBR941
MMBR951
MMBR5031
MMBR2857
BFS17
7Y
7Z
7G
7K
E1
8
7.5
2
1.2
1
15
30
5
4
2
6
6
6
10
5
1.7
1.7
1.9
3
5
5
5
1
1.5
2
6
6
6
6
5
6
5
5
-
--
500
500
500
500
30
10
13
11
15
16
1
20
5
2
5
1
10
1000
450
450
500
1000
12.5
12.5
17
12.5
5
5
1
1.5
6
6
6
6
-
*GNF
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-36
5
10
30
-
6
10
6
-
2000
2000
450
450
30
SURFACE MOUNT -
II
SOT·23 TRANSISTORS (continued)
SOT-23 Field Effect Transistors (JFETs)
TABLE 10. RF JFETs
Pinout: 1·Drain. 2·Source. 3·Gate
Device
N·CHANNEL
MMBFU310
MMBF102
MMBF108*
MMBFl12
MMBF5484
MMBF5485*
MMBF5486
MMBF4416
MMBFJ310
6e
1.5
3**
3**
3**
2
2
2
2
4
-
TV
6B
-
6H
SA
6T
1
10
2
2
1
3
3.5
4
4.5
8
-
100
-
100
100
100
100
450
18
7.5
7.5
7.5
6
7
8
7.5
18
10
15
15
10
15
15
15
15
10
-25
-25
-25
-25
-25
-25
-25
-30
-25
**Max
TABLE 11. General-Purpose FETs
Pinout: 1·Drain. 2·Source. 3·Gate
Device
N·CHANNEL
MMBF5457
MMBF5459
P·CHANNEL
I MMBF5460
-40
6E
I
-15
4
5
TABLE 12. Chopper/Switches, JFETs
Pinout: 1-Drain. 2·Source. 3·Gate
Device
N·CHANNEL
MMBF4391
BSR56
MMBF4860
BSR57
MMBF4392
BSR58
MMBF4393
6J
M4
6F
M5
6K
M6
6G
30
25
40
40
60
60
100
30
20
25
50
50
35
100
50
40
30
40
30
40
30
-4
-4
-2
-2
-2
-0.8
-0.5
P-CHANNEL
MMBFJ175
MMBFJ177
TABLE 13. TMOS FETs
Pinout: 1·Gate. 2·Source. 3-Drain
Device
MMBF170
BSS123
2N7002
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
1-37
-10
-10
-6
-6
-5
-4
-3
50
50
150
20
20
25
8
5
100
100
75
80
-
30
•
SURFACE MOUNT -
SOT-23 DEVICES (continued)
SOT-23 Switching Diodes
STYLE 8 1 0
STYLE 9 1 0---+1--
03
.1
10IIII
I
.1
STYLE 12 1 0
02
STYLE 11 1 0
03
10IIII
.1
STYLE 19 1 0
02
3
SERIES
SINGLE
.1
I
10IIII
I
10IIII
3
COMMON ANODE
3
COMMON CATHODE
SINGLE
STYLE IS 2 0
I
10IIII
SERIES
TABLE 14. General-Purpose Diodes
Device
Marking
VF
IR
V(BRIR
Min (VI I @ IBR (pAl Max (!'A,I @ VR (VI Min (VI I Max (VII @ IF (mAl
CT
trr
Max (pFI
Max (nsl
Pin
Out
Case
Style
SINGLES
MMBD6050X
MMBD914X
MBAS16
MBAL99
5AX
5DX
A6X
TFX
70
100
75
70
100
100
100
10
0.1
5
1
2.5
50
75
75
70
MBAV70
MBAW56
MBAV99
MBAV74
A4X
A1X
A7X
JAX
70
70
70
50
100
100
100
5
5
2.5
2.5
0.1
70
70
70
50
MMBD2835X
MMBD2836X
MMBD2837X
MMBD2838X
MMBD6100
MMBD7000
A3X
A2X
A5X
A6X
5B
5C
35
75
35
75
70
'00
100
100
'00
'00
'00
'00
0.1
0.1
0.'
0.'
0.1
0.3
30
50
30
50
50
50
0.85
1.1
1
1.3
1.1
100
10
100
50
2.5
4
2
1.5
15
15
15
15
8
8
8
18
1.1
1.1
1.1
1
50
50
50
100
1.5
1.5
1.5
2
15
15
15
9
12
1
1
10
10
10
'0
100
100
4
15
15
'5
'5
'5
15
12
12
9
9
9
11
DUALS
,,
0.85
0.75
1.1
1.1
4
4
4
2.5
1.5
11
9
TABLE 15. Mixer and Detector Diodes
Pin Diodes are designed for VHF Band and General Purpose Switching. Hot Carrier Diodes are ideal for VHF. UHF
applications.
Cy
V(BRIR
Device
Marking Min (VI I @ IR (pAl
RS
VF
IR
Max
Max (PF,I @ VR (VI (ohmsl Max (VII @ IF (mAl Max (pAl I @ VR (V)
Pin
Out
Case
Style
PIN DIODES (SINGLES)
MMBD101
MMBD201
MMBD301
MMBD501
MMBD701
4M
4S
4T
5F
5H
4
20
30
50
70
10
10
10
10
10
1
1.5
1.5
1
1
0
15
15
20
20
0.6
0.6
0.6
1.2
1.2
10
10
10
10
10
HOT CARRIER SCHOTTKY DIODES (DUALS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-38
0.25
0.2
0.2
0.2
0.2
3
15
25
25
35
8
8
8
8
8
SURFACE MOUNT -
•
SOT-23 SWITCHING DIODES (continued)
TABLE 16. Zener Diodes
Zener Diodes are offered in two popular series. The MMBZ5226 has the same specifications as the standard axial leaded
lN5226 series. The BCX84 series is identical to popular European series SOT-23's.
Pinout: 1-Anode. 2-NC. 3-Cathode (VF
= 0.9 V Max @ IF = 10 mA for all types.)
Zener
Voltege
Vz (±5%)
Nominal
ZZK
IZ = 0.25 mA
o Max
ZZT
IZ = Izr
@IO%Mod
o Max
Max
IR
Marking
Test
Current
Izr
mA
p.A
VR
V
MMBZ5226B
MMBZ5227B
MMBZ5228B
MMBZ5229B
MMBZ5230B
8A
8B
8C
80
8E
20
20
20
20
20
3.3
3.6
3.9
4.3
4.7
1600
1700
1900
2000
1900
28
24
23
22
19
25
15
10
5.0
5.0
1.0
1.0
1.0
1.0
2.0
MMBZ5231B
MMBZ5232B
MMBZ5233B
MMBZ5234B
MMBZ5235B
8F
8G
8H
8J
SK
20
20
20
20
20
5.1
5.6
6.0
6.2
6.S
1600
1600
1600
1000
750
17
11
7.0
7.0
5.0
5.0
5.0
5.0
5.0
3.0
2.0
3.0
3.5
4.0
5.0
MMBZ5236B
MMBZ5237B
MMBZ523SB
MMBZ5239B
MMBZ5240B
SL
SM
SN
8P
SQ
20
20
20
20
20
7.5
8.2
8.7
9.1
10
500
500
600
600
600
6.0
S.O
S.O
10
17
3.0
3.0
3.0
3.0
3.0
6.0
6.5
6.5
7.0
S.O
MMBZ5241B
MMBZ5242B
MMBZ5243B
MMBZ5244B
MMBZ5245B
SR
85
8T
8U
8V
20
20
9.5
9.0
8.5
11
12
13
14
15
600
600
600
600
600
22
30
13
15
16
2.0
1.0
0.5
0.1
0.1
8.4
9.1
9.9
10
11
MMBZ5246B
MMBZ5247B
MMBZ5248B
MMBZ5249B
MMBZ5250B
8W
8X
8Y
8Z
81A
7.8
7.4
7.0
6.6
6.2
16
17
18
19
20
600
600
600
600
600
17
19
21
23
25
0.1
0.1
0.1
0.1
0.1
12
13
14
14
15
MMBZ5251B
MMBZ5252B
MMBZ5253B
MMBZ5254B
MMBZ5255B
81B
81C
810
81E
81F
5.6
5.2
5.0
4.6
4.5
22
24
25
27
28
600
600
600
600
600
29
33
35
41
44
0.1
0.1
0.1
0.1
0.1
17
18
19
21
21
MMBZ5256B
MMBZ5257B
81G
81H
4.2
3.8
30
33
600
700
49
0.1
0.1
23
25
Device
58
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-39
@
•
SURFACE MOUNT -
SOT-23 DEVICES (continued)
TABLE 16. Zener Diodes (continued)
Pinout: 1·Anode. 2-NC. 3-Cathode
VZl
Vohs
VZ3
Vohs
VZ2
Vohs
IZ
mA
@
ZZT
' (ohms) (max)
MaxlR
~VR
Device
BZX84C3V3
BZX84C4V3
BZX84C4V7
BZX84C5Vl
BZX84C5V6
Marking
Max Min
3.5
2.3
4.6
3.3
5
3.7
5.4 ,4.2
4.8
6
Max
2.9
4
4.7
5.3
6
Min
3.6
4.4
4.5
5
5.2
Max
4.2
5.1
5.4
5.9
6.3
IZl
5
5
5
5
5
1Z2
1
1
1
1
1
1Z3
20
20
20
20
20
(Vohs)
IR(,..A)
Z14
W9
Zl
Z2
Z3
Min
3.1
4
4.4
4.8
5.2
1
1
2
2
2
5
3
3
2
1
@IZ=IZl
95
90
80
60
40
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9Vl
Z4
Z5
Z6
Z7
Z8
5.8
6.4
7
7.7
8.5
6.6
7.2
7.9
8.7
9.6
5.6
6.3
6.9
7.6
8.4
6.6
7.2
7.9
8.7
9.6
5.8
6.4
7
7.7
8.5
6.8
7.4
8
8
9.7
5
5
5
5
5
1
1
1
1
1
20
20
20
20
20
4
4
5
5
6
3
2
1
0.7
0.5
10
15
15
15
15
BZX84Cl0
BZX84Cll
BZX84C12
BZX84C13
BZX84C15
Z9
Vl
V2
V3
V4
9.4
10.4
11.4
12.4
13.8
10.6
11.6
12.7
14.1
15.6
9.3
10.2
11.2
12.3
13.7
10.6
11.6
12.7
14
15.5
9.4
10.4
11.4
12.5
13.9
10.7
11.8
12.9
14.2
15.7
5
5
5
5
5
1
1
1
1
1
20
20
20
20
20
7
8
8
8
10.5
0.2
0.1
0.1
0.1
0.05
20
20
25
30
30
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
V5
V6
V7
V8
V9
15.3
16.8
18.8
20.8
22.8
17.1
19.1
21.2
23.3
25.6
15.2
15.7
18.7
20.7
22.7
17
19
21.1
23.2
25.5
15.4
16.9
18.9
20.9
22.9
17.2
19.2
21.4
23.4
25.7
5
5
5
5
5
1
1
1
1
1
20
20
20
20
20
11.2
12.6
14
15.4
16.8
0.05
0.05
0.05
0.05
0.05
40
45
55
55
70
BZX84C27
BZX84C30
BZX84C33
Vl0
Vll
V12
25.1
28
31
28.9
32
35
25
27.8
30.8
28.9
32
35
25.2
28.1
31.1
29.3
32.4
35.4
2
2
2
0.5
0.5
0.5
10
10
10
18.9
21
23.1
0.05
0.05
0.05
80(1)
80(1)
80(1)
N01E: (1) rdiff@ IZ
= 2 rnA
TABLE 17. Tuning Diodes
., General Purpose. Abrupt and Hyper-Abrupt Junction. Voltage Variable Capacitance diodes are used for tuning and control
of RF circuits through UHF frequencies.
Pinout: 1-Anode. 2-NC, 3-Cathode
Device
Capacitance
Ratio
CT
VlBR)R
,I @IR
(V)
Marking Min (V) (pA) Min (pF),IIMax (pF))I@VR
Q
IR
Max
Min I Max
,I@VRI
It,
Typ
(V)
(MHz)
(pA)
I @VR
(V)
TUNING DIODES
MMBV105G
MMBV109
MMBV2101
MMBV2103
MMBV2108
4E
4A
4G
4H
4X
30
30
30
30
30
10
10
10
10
10
1.8
26
6.1
9
24.3
2.8
32
7.5
11
29.7
25
3
4
4
4
4
5
2.5
2.5
2.5
6
6.5
3.2
3.2
3.2
350
250
400
350
250
3
3
4
4
4
50
50
50
50
50
0.05
0.02
0.02
0.02
0.02
28
25
25
25
25
MMBV2109
MMBV3102
MMBV409
MMBV432L(1)
4J
4C
30
30
20
14
10
10
29.7
20
26
43"
36.3
25
32
48.1"
4
3
3
2.5
4.5
1.5
1.5
3.2
3.2
1.9
200
300
300
100
4
3
3
2
50
50
50
50
0.02
0.1
25
25
4B
(1) Monolithic Dual. Style 9
10
2
*Each Diodes
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-40
-
-
0.1
9
SURFACE MOUNT -
•
SOT-23 SWITCHING DIODES (continued)
TABLE 18. Thyristors
SILICON CONTROLLED RECTIFIERS
Device
IF
(mA)
VFXM
Marking
(mA)
IGT
(pA)
VGT
(V)
IH
(mA)
Case
Style
5R
5S
5T
500
500
500
25
50
100
200
200
200
0.8
0.8
0.8
5
5
5
14
14
14
MMBS5060
MMBS5061
MMBS5062
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
Ip
Device
MMBPU131
MMBP6027
MMBP6028
IV
Marking
RG = 10 kO
pA Min
RG=1MO
pAMax
IGAO
@40V
nAMax
RG = 10 kO
pAMin
RG=1MO
/loA Max
Case
Style
5Z
5W
5V
5
5
1
2
2
0.15
5
10
10
70
70
70
50
50
25
14
20
20
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-41
•
Devices for Hi-Rei and Military Applications
JAN, JANTX, JANTXV, and JANS
Motorola offers over 650 devices listed in QPL-19500, and is certified to supply small-signal bipolar devices to ALL FOUR quality
levels of MIL-S-19500.
The following tables list the Motorola discrete devices and slash-sheet number as they appear on the Qualified Products List.
TABLE 1. Switching and High-Frequency Transistors (MIL-S-19500)
2N703 JAN . . . . . . . . . . . . . . . . . 1153
2N706 JAN . . . . . . . . . . . . . . . . . /120
2N708 JAN,JTX . . . . . . . . . . . . . . . /312
2N718A JAN,JTX,JTXV . . . . . . . . . . /181
2N869A JAN,JTX . . . . . . . . . . . . . . /283
2N914 JAN,JTX . . . . . . . . . . . . . . . /373
2N916 JAN . . . . . . . . . . . . . . . . . /271
2N918 JAN,JTX,JTXV,JANS . . . . . . . /301
2N930 JAN,JTX . . . . . . . . . . . . . . . /253
2Nl132 JAN . . . . . . . . . . . . . . . . . /177
2N1613 JAN,JTX,JTXV . . . . . . . . . . /181
2N2218 JAN,JTX,JTXV . . . . . . . . . . /251
2N2218A JAN,JTX,JTXV . . . . . . . . . /251
2N2219 JAN,JTX,JTXV . . . . . . . . . . /251
2N2219A JAN,JTX,JTXV . . . . . . . . . /251
2N22219AL JANS . . . . . . . . . . . . . . . /
2N2221 JAN,JTX,JTXV . . . . . . . . . . /255
2N2221A JAN,JTX,JTXV . . . . . . . . . /255
2N2222 JAN,JTX,JTXV . . . . . . . . . . /255
2N2222A JAN,JTX,JTXV,JANS . . . . . . /225
2N2369A JAN,JTX,JTXV,JANS . . . . . . /317
2N2481 JAN,JTX . . . . . . . . . . . . . . /268
2N2904 JAN,JTX,JTXV . . . . . . . . . . /290
2N2904A JAN,JTX,JTXV . . . . . . . . . . . I
2N2905 JAN,JTX,JTXV . . . . . . . . . . 1290
2N2905A JAN,JTX,JTXV . . . . . . . . . 1290
2N2905AL JANS . . . . . . . . .' . . . . . . . /
2N2906 JAN,JTX,JTXV . . . . . . • . . . 1291
2N2906A JAN,JTX,JTXV . . . . . . . . . 1291
2N2907 JAN,JTX,JTXV . . . . . . . . . . /291
2N2907A JAN,JTX,JTXV,JANS . . . . . . 1291
2N2944A JAN,JTX,JTXV . . . . . . . . . . . /
2N2945A JAN,JTX,JTXV . . . . . . . . . . . /
2N2946A JAN,JTX,JTXV . . . . . . . . . . . /
2N3013 JAN,JTX . . . . . . . . . . . . . . 1287
2N3019,S JAN,JTX,JTSV . . . . . . . . . /391
2N3250A JAN,JTX,JTXV . . . . . . . . . 1323
2N3251A JAN,JTX,JTXV . . . . . . . . . 1323
2N3253 JAN . . . . . . . . . . . . . . . . . 1347
2N3444 JAN,JTX . . . . . . . . . . . . . . 1347
2N3467 JAN,JTX,JTXV . . . . . . . . . . /348
2N3468 JAN,JTX,JTXV . . . . . . . . . . /348
2N3485A JAN,JTX . . . . . . . . . . . . . 1392
2N3486A JAN,JTX . . . . . . . . . . . . . /392
2N3498 JAN,JTX,JTXV . . . . . . . . . . /366
2N3499 JAN,JTX,JTXV . . . . . . . . . . /366
2N3500 JAN,JTX,JTXV . . . . . . . . . . /366
2N3501 JAN,JTX,JTXV . . . . . . . . . . 1366
2N3506
2N3507
2N3634
2N3635
2N3636
2N3637
2N3700
2N3735
2N3737
2N3743
2N3762
2N3763
2N3764
2N3765
2N4033
2N4261
2N4405
2N4449
2N4453
2N4930
2N4931
2N5581
2N5582
JAN,JTX,JTXV . . . . . . . . . . /349
JAN,JTX,JTXV . . . . . . . . . . /349
JAN,JTX,JTXV . . . . . . . . . . /357
JAN,JTX,JTXV . . . . . . . ... 1357
JAN,JTX,JTXV . . . . . . . . . . /357
JAN,JTX,JTXV . . . . . . . . . . /357
JAN,JTX,JTXV . . . . . . . ... 1391
JAN,JTX,JTXV . . . . . . . . . . /395
JAN,JTX,JTXV . . . . . . . . . . 1395
JAN,JTX,JTXV . . . . . . . . . . 1397
JAN,JTX,JTXV . . . . . . . . . . /396
JAN,JTX,JTXV . . . . . . . ... 1396
JAN,JTX,JTXV . . . . . . . ... /396
JAN,JTX,JTXV . . . . . . . . . . 1396
JAN ,JTX,JTXV . . . . . . . . . . 1511
JAN,JTX,JTXV . . . . . . . ... /511
JAN,JTX,JTXV . . . . . . . . . . /488
JAN,JTX,JTXV . . . . . . . . . . 1317
JAN,JTX . . . . . . . . . . . . . . 1283
JAN,JTX,JTXV . . . . . . . . . . 1397
JAN,JTX,JTXV . . . . . . . . . . 1397
JAN,JTX . . . . . . . . . . . . . . /423
JAN,JTX . . . . . . . . . . . . . . /423
TABLE 2. Multiple Devices (MIL-S-19500)
2N2060
2N2919
2N2920
2N381 0
JAN,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
. . . . . . . . . . 1270
. . . . . . . . . . /355
. . . . . . . . . . /355
. . . . . . . . . . 1336
2N3811 JAN,JTX,JTXV . . . . . . . . . . 1336
2N4854 JAN,JTX,JTXV . . . . . . . ... /421
2N5793 JAN,JTX,JTXV . . . . ... . .. /495
2N5794 JAN,JTX,JTXV . . . . . . . . . . /495
2N5795 JAN,JTX,JTXV . . . . . . . . . . /496
2N5796 JAN,JTX,JTXV . . . . . . . . . . /496
TABLE 3. Field-Effect Transistors (MIL-S-19500)
2N2608
2N2609
2N3330
2N3821
2N3822
JAN. . . . . . .
JAN. . . . . . .
JAN,JTX. . . .
JAN,JTX,JTXV
JAN,JTX,JTXV
. . . . . . . . . . 1295
. . . . . . . . . . /296
. . . . . . . . . . 1378
. . . . . . . . . . 1375
. . . . . . . . . . 1375
2N3823
2N4856
2N4857
2N4858
2N4859
JAN,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
..........
. . . . . . . ...
..........
..........
. . . . . . . ...
1375
1385
1385
1385
1385
2N4860
2N4861
2N4091
2N4092
2N4093
JAN ,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
JAN,JTX,JTXV
. . . . . . . . . . /385
. . . . . . . . . . /385
. . . . . . . . . . 1431
. . . . . . . . . . 1431
. . . . . . . . . . 1431
CECC
All CECC types are available to assessment levels E, F, L
TABLE 4. Qualified Types
2N1613
2N1711
2N1893
2N2218
2N2218A
2N2219
2N2219A
2N2221
2N2221A
2N2222
2N2222A
2N2368
2N2369
2N2369A
2N2484
2N3019
2N2904
2N2904A
2N2905
2N2905A
2N2906
2N2906A
2N2907
2N2907A
2N2894
2N3439
2N3440
2N3501
2N4033
2N5415
Qualified products to CECC 50,000
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
1-42
2N5416
BCl 07-1 08-1 09
CV9507
P07726
CASE 29-113
T0-226AE
(1 WATT T()"92)
(f~,C~_226AA
1
23
Plastic-Encapsulated •
Devices
(TO-92)
(!~,,C~0_226AC
,
Motorola's plastic transistors and diodes encompass
hundreds of devices spanning the gamut from general-purpose
amplifiers and switches with a wide variety of characteristics to
dedicated special-purpose devices for the most demanding
applications. The popular high-volume TO-226AA (TO-92) package combines proven reliability, performance, economy and convenience to provide the perfect solution for industrial and consumer design problems.
As an additional service to our customers Motorola will, upon
request, supply the following:
• Radial tape and reel
• Axial tape and reel
• TO-205AA (T0-5) lead forming
• TO-206AA (TO-18) lead forming
Contact your Motorola representative for ordering information.
2-1
•
2N3903
2N3904
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltge
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
'Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
IC
200
mAde
Po
625
5.0
mW
mWI"C
Po
1.5
12
Watts
mWI"C
TJ, Tstg
-55to +150
°c
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
,I·:~'23
*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
0
Thermal Resistance, Junction to Ambient
..
Symbol
Max
RWC
83.3
Unit
0c/w
RWA
200
°CIW
1 Emitter
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
'Indleates Date '" addItIon to JEDEC Requirements .
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
6.0
-
Vdc
50
nAdc
50
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 30 Vde, VEB
IBl
= 3.0 Vde)
Collector Cutoff Current
(VCE = 30 Vde, VEB = 3.0 Vde)
ICEX
-
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 0.1 mAde, VCE
(lc
=
(lC
hFE
=
-
2N3903
2N3904
20
1.0 Vde)
2N3903
2N3904
35
70
-
50
100
150
300
1.0 Vde)
40
1.0 mAde, VCE
=
=
10 mAde, VCE
=
1.0 Vde)
2N3903
2N3904
(lC
=
50 mAde, VCE
=
1.0 Vde)
2N3903
2N3904
30
60
(lC
=
100 mAde, VCE
2N3903
2N3904
15
30
-
-
0.2
0.3
=
1.0 Vde)
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
2N3903
2N3904
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2·2
-
Vde
Vdc
0.65
SMALL-8IGNAL CHARACTERI~TICS
-
0.85
0.95
2N3903,2N3904
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted)
Characteristic
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vdc, Ie
=
1.0 MHz)
0, f
=
Symbol
Input Impedance
(Ie = 1.0 mAdc, VeE
=
10 Vdc, f
=
1.0 kHz)
2N3903
2N3904
Voltage Feedback Ratio
(lc = 1.0 mAdc, VCE
=
10 Vdc, f
=
1.0 kHz)
2N3903
2N3904
Small-Signal Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc, f
=
1.0 kHz)
2N3903
2N3904
Output Admittance
(Ie = 1.0 mAdc, VCE
=
1.0 kHz)
Max
Unit
Cobo
Min
-
4.0
pF
Cibo
-
B.O
pF
1.0
1.0
B.O
10
0.1
0.5
5.0
B.O
50
100
200
400
1.0
40
-
6.0
5.0
-
35
ns
35
ns
175
200
ns
50
ns
X 10-4
h re
=
10 Vdc, f
Noise Figure
(lC = 100 /'Adc, VCE = 5.0 Vdc, RS
f = 10 Hz to 15.7 kHz)
-
hie
hoe
"mhos
NF
=
dB
2N3903
2N3904
1.0 k ohms,
•
k ohms
hie
SWITCHING CHARACTERISTICS
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IBl = 1.0 mAdc)
Delay Time
Rise Time
(Vec = 3.0 Vdc, Ie = 10 mAdc,
IBl = IB2 = 1.0 mAdc)
Storage Time
td
-
tr
2N3903
2N3904
ts
Fall Time
tf
(1) Pulse Test: Pulse Width"" 300 "", Duty Cycle"" 2.0"10.
FIGURE 2 - STORAGE AND FALL TIME
EQUIVALENT TEST CIRCUIT
FIGURE 1 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
300 nS-+j
---":fj
10<1, <500p.S-+I I, ~+109V
)4-
DUTY CYCLE = 2%f.jt+lo.9V
-0.5V
<
1.0 ns
C
IN916
-9.1 V --(-/4- < 1.0 ns
-Totellhunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
-
TJ = 250 C ---T J = 125°C
FIGURE 3 - CAPACITANCE
FIGURE 4 - CHARGE DATA
10
5000
= ~V
3000 -lcll.=IO
7.0
5.0
i-
ii!i$
vc!:
-
~3. 0
~
-
I
r-... Cibo
r--... r-....
d
500
300
200
I'--.
1.0
0.1
~-
1000
0.2 0.3
.....
~ 700
Cabo ............
2.0
,
2000
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE IVOLTS)
:::.
r-
100
70
50
1.0
20 30 40
---
-
,-
I-""
2.0 3.0
,
'/
V
'/
/'
/
Qy
I
a..
5.0 7.0 10
20 30
Ie. COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-3
-,-
50 70 100
200
2N3903,2N3904
FIGURE 5 - TURN'()N TIME
500
•
300
"
."- I'.
200
iii....
~
.:-oL" 1.@Ycc
I'..
~..
3.0
",.. 40Y
~
~
,
~
7.0
5.0
1.0
5.0 7.0 10
20 30
Ie. COLLECTOR CURRENT ImAl
50 70 100
200
2.0
300
--
:e /l ;
II
110
- l"f:
::
101,-
-
1,,=112
lell,
lel l,
300
I
~
~
"'-
200
20
20 """" 1::$
lell, uj.:C
!
"'"
"'l ~
_ 100
§ 70
lell,~20
3.0
5.0 7.0 10
20 30
Ie. COLLECTOR CURRENT (mAl
50 70 100
lell, _lO'~'"
;i
...
...
......
lO~
Icll.
--
...
;::.
~
10
7.0
5. 0
1.0
200
20
Icll.
50
10
2.0
200
,I \~,I-II2IY -4OY_
~
20
1.0
50 70 100
1'-
~ 30
7.0
5.0
, .-
,
FIGURE 8 - FALL TIME
500
I·.~I.-
--- --
~
5.0 7.0 10
20 30
Ie. COLLECTOR CURRENT (mAl
3.0
FIGURE 7 - STORAGE TIME
500
200
10
10
0
.OY
3.0
Ic/l,~
30
20
15~ :::::I
.?
t,,@Yo,
2.0
Ycc~4IlY
70
50
!
r-- r'"
10
7.0
5.0
1.0
,
FIGURE 6 - RISE TIME
100
" "
20
~
200
50
30
.",
300
" "" :-...."
100
_ 70
§
500
le/l,= 10
2.0
3.0
20 30
50
5.0 7.0 10
Ie. COLLECTOR CURRENT ImAl
70 100
200
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
vCE = 5.0 Vde. T A = 25°C.
FIGURE 9
12
1
10
\
Bandwidth = 1.0 Hz
FIGURE 10
14
L
I
r - SOURCE RESISTANCE ~ 2OO!l
I-- ~Ic~ 1.0mA
1~.j.0~ /1/1 II
10
/ f
1
/
'\
"- I'.....
"i
I"
17'"
_
o
0.1
"""
;-...
t:--
SOURCE RESISTANCE ~ 200!l
le~10.5mA
'\
'/
I'\. Y'
-
"
::l-
L SOURCE RESISTANCE 500!l
I-- Ie ~ 100 p.A
SOURCE RESISTANCE ~ 1.0 k
I
Ie ~ 50 p.A
0.2
0.4
A'- =10.5'J /
1.0
2.0
4.0
10
I. FREQUENCY 1kHz)
20
40
o
100
0.1
0.2
.:>
........
0.4
L /
/
/
/ ' Ie - 50 p.A
/
'\
r-.....
1 I )' II
1
f-1-1.0kHz
12
1./ V le =l00pA/
/
/
/
/
./ ./
....."
1.0
2.0
4.0
10
R,. SOURCE RESISTANCE (k ohm, I
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2·4
20
40
100
2N3903, 2N3904
h PARAMETERS
= 10 Vdc. f = 1.0 kHz. T A = 25°C)
(VCE
FIGURE 11 - CURRENT GAIN
FIGURE 12 - OUTPUT ADMITTANCE
300
100
200
50
i.-- ~
i-""
......
V
II
--
V
L
V
-
50
2.0
30
10
0.1
0.2
2.0
0.5
1.0
Ie. COLLECTOR CURRENT ImA)
0.3
3.0
5.0
10
0.1
0.2
FIGURE 13 - INPUT IMPEDANCE
3.0
5.0
10
FIGURE 14 - VOLTAGE FEEDBACK RATIO
10
.......
20
1.0
0.5
2.0
Ie. COLLECTOR CURRENT ImAl
0.3
i'-.....
10
"\.
e 5.0
'"
Dr\.
52
'\
!;<
r-..,
: 3.0
r-....
~~
'"
.f'..
"'I"'
2.0
~
r-
r'-- b"
§<
.J 1.0
0.5
~
VV
0.7
0.5
0.2
0.1
0.2
0.3
0.5 3.0 1.0
2.0
Ie. COLLECTOR CURRENT (mA)
5.0
0.1
10
0.2
0.3
0.5
1.0
2.0
Ie. COLLECTOR CURRENT (mAl
5.0
3.0
TYPICAL STATIC CHARACTERISTICS
FIGURE 15 - DC CURRENT GAIN
2.0
i~
1.0
~
0.7
~
0.5
I
J..--
~ 0.3
--I--
Q
TJ
=
+1125 o
T;
J
r--:. r---.r-..,
H::...:I--
...............
.......
--
-... .......
55°C
I-- ~ l-
~
"'-
i'
t-.....
r--.
If
... 0.2
&
O. I
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
Ie. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-5
I
Vc,= 1.0 V
30
50
70
100
'\
"
"'" ~
200
10
2N3903,2N3904
FIGURE 16 - COLLECTOR SATURATION REGION
1.0
•
;
TJ ~ 25°C
O.S
,~
~
30 rnA
10mA
le~1.0mA
~
lOOmA
t
0.6
1
~
~
I'.
'" 0.4
I
~
>
'\
f\.
0.2
o
0.01
0.02
........
b-....
r-....
0.03
0.05
0.07
0.1
r---
t-0.2
0.3
0.5
I" BASE CURRENT (mAl
FIGURE 17 - "ON" VOLTAGES
0.7
1.0
2.0
3.0
10
~IJ5°!-
1-1- l-
11 cttI I
-WC TO +25°C
0
1--'1-
I-+-I--+-l-+tt+-t+ VeEIY'I @ lell, ~ 10 bl'fl--H
-1.5
0.21-+-1--+-l-+tt++I--++--+--:l..oI"H-H-I---1--1
1---1--'
100
11
200
+jjTO+125 0 C t-
VI--'
fJ..,. for VIEh.tl
-2. olr
o w
O.~~~~~~~~~~~~~~
I I
WC TO +25°C
5
0.41--+-+-+++++1H+--H---+--1H-+H+hL~
II I I I I
Ove for VeEISlt)
h-
0
5.0
10
20
50
Ie, COLLECTOR CURRENT (mAl
7.0
II
O. 5
2.0
5.0
FIGURE 18 - TEMPERATURE COEFFICIENTS
1. 0
1.0
I""'-r-
~
11
w
~
~
m
I I
~
Ie, COLlECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-6
~
m
~
2N390S
2N3906
MAXIMUM RATINGS
Rating
Symbol
Value
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Po
625
5.0
mWrC
Collector Current -
Continuous
Total Device Dissipation @ T A
Derate above 25'C
= 25'C
Total Power Dissipation @ TA
= 60'C
= 25'C
Total Device Dissipation @ TC
Derate above 25'C
Operating and Storage Junction
Temperature Range
Unit
CASE 29·04, STYLE 1
TO·92 (TO·226AAI
11 ~()"-'
mW
Po
250
mW
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
·C
2
1 Emitter
3
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
Thermal Resistance, Junction to Ambient
R8JA
200
'CIW
.c!w
ELECTRICAL CHARACTERISTICS (TA
=
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 30 Vde, VBE
IBL
= 3.0 Vde)
Collector Cutoff Current
(VCE = 30 Vde, VBE = 3.0 Vde)
ICEX
-
-
-
Vde
Vde
Vde
50
nAde
50
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 0.1 mAde, VCE
(lC
=
1.0 mAde, VCE
hFE
=
1.0 Vde)
2N3905
2N3906
30
60
=
1.0 Vde)
2N3905
2N3906
80
40
(lC
=
10 mAde, VCE
=
1.0 Vde)
2N3905
2N3906
50
100
(lC
=
50 mAde, VCE
=
1.0 Vde)
2N3905
2N3906
30
60
(lC
=
100 mAde, VCE
2N3905
2N3906
15
30
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
-
-
150
300
-
Vde
-
0.25
0.4
0.65
-
0.85
0.95
200
250
-
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
2N3905
2N3906
IT
Cobo
100 kHz)
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
2·7
-
4.5
MHz
pF
•
. 2N3905, 2N3906
ELECTRICAL CHARACTERISTICS (continued) (TA
•
= 25"C unless otherwise noted)
Characteristic
Input Capacitance
(VBE = 0.5 Vdc, IC = '0, f = 100 kHz)
Input Impedance
(lC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCE
= 10 Vdc, f
= 10 Vdc, f
Min
Max
Unit
Cibo
-
10.0
pF
k ohms
hie
2N3905
2N3906
0.5
2.0
B.O
0.1
0.1
5.0
10
50
100
200
400
1.0
3.0
40
60
12
X 10- 4
h re
2N3905
2N3906
= 1.0 kHz)
Small-Signal Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(lC' = 1.0 mAdc, VCE
Symbol
-
hfe
2N3905
2N3906
!,mhos
hoe
2N3905
2N3906
= 1.0 kHz)
Noise Figure
(lC = 100 /'Adc, VCE = 5.0 Vdc, RS
f = 10 Hz to 15.7 kHz)
NF
= 1.0 k ohm,
-
2N3905
2N3906
dB
-
5.0
4.0
td
-
35
ns
tr
-
35
ns
200
225
ns
60
75
ns
SWITCHING CHARACTERISTICS
(VCC = 3.0 Vdc, VBE = 0.5 Vdc
IC = 10 mAdc, IBl = 1.0 mAdc)
Delay Time
RiseTime
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAde,
IBl = IB2 = 1.0 mAdc)
Fall Time
2N3905
2N3906
ts
2N3905
2N3906
tf
-
(1) Pulse Width", 300 !'8, Duty Cycle", 2.0%.
FIGURE 1 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
FIGURE 2 - STORAGE AND FALL TIME
EQUIVALENT TEST CIRCUIT
+d?'IV~J-<1.0ns
de;
+0.5.Vv-~U
o
_
-10.6 V~
10k
\4- 300 ns
DUTY CYCLE = 2%
10 < t, < SOD!,s --"
DUTY CYCLE = 2% -...,
lN916
....... -1O.9V
t, ,..-
-Total shunt capacitance of test jig and connectors
TRANSIENT CHARACTERISTICS
- - T J = 25"C --- T J = 125"C
FIGURE 3 - CAPACITANCE
FIGURE 4 - CHARGE DATA
10
5000
7.
3000 _
16/1,1=10 1
Vcc =40V
0:-
5.0
r--r--.; ....
~
Cibo ~
g
........
I
0
~
d
2. 0
.
" "
1000
700
500
300
... .-'.".
200 '"
Q,
"
V
_r-
/
r-
Q.
100
1.0
0.1
-- -
2000
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
70
50
50
1.0
REVERSE BIAS IVOLTS)
2,0 3.0
20 30
5.0 7.0 10
Ie. COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-8
50 70 100
200
2N3905,2N3906
FIGURE 6 - FALL TIME
FIGURE 5 - TURN-ON TIME
500
,
I,
lell,
30o~
,
200
~
500
10
"
~
,.
~
"-
200
~
0
70
50
,@Vee
~
I"
30
20
~
r-...
10
1.@Vo,
2.0
3.0
vl==7' F-
10
20
,
~,
0
15J"'::
4~
11
(ell,-20
10
lell,
0
lell,
,
-- --
~
1"
0
......
t'- i'-...
7.0
5.0
1.0
3.0
~
lell,
0
~
I" _
I"
Vee~40V
~~
100
!
!
....
300
~
~,
0
0
5.0 1.0 10
20 30
Ie. COLLECTOR CURRENT (mAl
1. 0
OV
5.0
1.0
200
50 10 100
2.0
20 30
5.0 7.0 '10
Ie. COLLECTOR CURRENT ImAI
3.0
50
10 100
200
AUDIO SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
Bandwidth = 1.0 Hz
12
FIGURE 7 -
FIGURE 8 -
/
1-1 =\.OkHZ
10
!
0.1
0.2
0.4
1.0
2.0
4.0
40
j-j
/
8.0
J
100~'l
17
1/
0::
6.0
I!E'
4.0
'\. '\..
. / ./
r-..... f'.. V
......;:
t::.. P
. / r--0.5mA
/
/
2.0
OL--L__~~LL__~~~-LL--L__~~U
1.0 mA
'\
ij
1.0
Ie
1/
/
1.1
V 17
/ /
1/
V./ --50~
b::
o
10
20
(VeE
= 10 Vdc, f = 1.0 kHz.
100
0.1
0.2
0.4
1.0
2.0
4.0
10
R,. SOURCE RESISTANCE Ikohmsl
I. FREQUENCY (kHzl
20
40
100
h PARAMETERS
TA = 25°C)
FIGURE 9 _ CURRENT GAIN
FIGURE 10 - OUTPUT ADMITTANCE
100
300
70
200
V
/
l - I-
z
~
/
1
./
100
~
1/
70
I--50
7.0
30
0.1
5.0
0.2
0.3
0.5 0.1
10
2.0
3.0
5.0 1.0
0.1
10
0.2
0.3
0.5 0.1
1.0
2.0
Ie. COLLECTOR CURRENT (mAl
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-9
3.0
5.0
0.1
10
2N3905, 2N3906
RGURE 12 - VOLTAGE FEEDBACK RATIO
FIGURE 11 - INPUT IMPEDANCE
20
•
10
" r--..
10
7.0
7.0
""" 5.0
s;:
"" 5.0
'"~ 3.0
"in
~
"'\
o
u
"'-
~ 3.0
~ 2.0
""-
~
-:-; 1.0
..c
'\.
i
~ 2.0
"-
r-....
~'S!
7.0
" I---
j 1.0
0.5
...... 1-1
0.7
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
Ie. COLLECTOR CURRENT (mAl
3.0
5.0
0.5
0.1
7.0 10
0.2
2.0 3.0
0.5 0.7 1.0
Ie. COLLECTOR CURRENT (mAl
0.3
5.0 7.0
STATIC CHARACTERISTICS
FIGURE 13 - DC CURRENT GAIN
2.0
TJ
;:;
-
~ +l2~oC
W
N
::;
;i
'"o
;!;
z
+2slc
1. 0
.........
;;:
~
~
,
5;oC
O.7
I
1.0V
VeE
-...........
O.5
"'
'"
a'" o.3
~
~~~
u
c
I'
~ o.2
~
~
~
O. 1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
FIGURE 14 -
5.0
7.0
10
3.0
Ie. COLLECTOR CURRENT (mA)
50
70
L! 2~ob
:\
lOrnA
\
6
100~A
30mA
\
1,\
4
2\'
r'-....
r0.02
0.03
0.05
0.07
0.1
~
200
100
\
le=1.0mA
0.01
30
COLLECTOR SATURA110N REGION
1.0
o
20
1\
--
--
.....
r--
0.2
0.3
0.5
I,. BASE CURRENT (mA)
0.7
1.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-10
2.0
3.0
5.0
7.0
10
10
2N3905,2N3906
FIGURE 15 - "ON" VOLTAGES
1.0
TJ
~
FIGURE 16 - TEMPERATURE COEFFICIENTS
1.0
VBElg'l@ Ie/I, ~ 10~
25'C
'-'
....
>
_H::±:t:+ftr
O.8
V.@VCE
.s
1.0 V
I
+25'C TO + 125'C
Bve for VeEI,•• )
~
~
u
.
o
~ -0.5
I
~
w
'"
/
I-
~ o.4
I
i ·1 1...H--'
~
~ -1.0
V
0.2
1III
o
1.0
I
~-1.5
L .J....+--
5.0
10
50
100
o
200
I
I
I
-2. 0
20
I 5r C,TO d'c,
I--'
I-
III
2.0
8VlforVIEI'lIItJ
ill
VC'IH'I @ Icllo ~ 10
20
40
60
80
100
120
140
Ic. COLLECTOR CURRENT (rnA!
Ic. COlLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-11
rtf...
+2J'cITO~I!5'! P-
:::>
:>
--
55'C TO +25'C
~
~ 0.6
V
I
0.5
160
180 200
•
II
2N4123
2N4124
MAXIMUM RATINGS
Symbol
2N4123
2N4124
Unit
Collector-Emitter Voltage
Rating
VCEO
30
25
Vde
Collector-Base Voltage
VCBO
40
30
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Collector Current - Continuous
IC
200
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWI'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mWI'C
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
1 Emitter
GENERAL PURPOSE
TRANSISTOR
THEBMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
°CIW
Thermal Resistance, Junction to Ambient
R8JA
200
°CIW
ELECTRICAL CHARACTERISTICS
(TA
=
NPN SILICON
25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IE = 0)
V(BR)CEO
Vde
40
30
-
V(BR)EBO
5.0
-
Vde
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
ICBO
-
50
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
50
nAde
2N4123
2N4124
50
120
150
360
2N4123
2N4124
25
60
-
Collector-Base Breakdown Voltage
(IC = 10 pAde, IE = 0)
2N4123
2N4124
30
25
V(BR)CBO
2N4123
2N4124
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Vde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 2.0 mAde, VCE = 1.0 Vde)
-
hFE
(lc = 50 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage(l)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.3
Vde
0.95
Vde
250
300
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
tr
MHz
Output Capacitance
(VCB = 5.0 Vde, IE = 0, f = 100 MHz)
Cobo
-
4.0
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, I = 100 kHz)
Cibo
-
8.0
pF
Collector-Base Capacitance
(IE = 0, VCB = 5.0 V, I = 100 kHz)
Ccb
-
4.0
pF
50
120
200
480
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vdc, 1= 1.0 kHz)
-
hie
2N4123
2N4124
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-12
2N4123,2N4124
ELECTRICAL CHARACTERISTICS
(continued) (TA = 2S·C unless otherwise noted.)
Min
Max
2N4123
2N4124
2.S
3.0
-
2N4123
2N4124
120
200
480
-
6.0
S.O
Symbol
Characteristic
Current Gain - High Frequency
(lC = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Ihfel
(lC = 2.0 mAde, VCE = 10 V, f = 1.0 kHz)
(lC = 2.0 mAde, VCE = 10 V, f = 1.0 kHz)
NF
Noise Figure
(lC = 100 pAdc, VCE = 5.0 Vdc, RS = 1.0 kohm,
Noise Bandwidth = 10Hz to lS.7 kHz)
(1) Pulse Test: Pulse Width = 300
,.s, Duty Cycle
50
2N4123
2N4124
dB
FIGURE 2 - SWITCHING TIMES
10
2011
7.0
100
.......
.....
!
~ 5.0
Ci1bO
/
.......
3.0
2.0
•
-
= 2.0%.
FIGURE 1 - CAPACITANCE
~
Unit
~
-
Cobo
T
-
~
!
j-....
0.2 O.l
0.5 0.7 \.0
2.0
3.0
SO 7.0 10
20
t"
'"
30
.r~
i'. ....
./
........
f!!'"
Vee 3V
Icll,-10
VIII") -o.SV
7.0
5.0
30 40
,...... /
~
20
10.0
-I-
1.0
0.1
~
70
50
1.0
2.0
l.O
10
5.0
RMRSE 81AS VOLTAGE (VOLTSI
20
30
50
100
2011
Ie. COllECTOR CUUOO InIAl
AUDIO SMALL SIGNAL CHARACTERISTICS
NOISt RlOH
(VCE = S Vde, T A = 2SoC)
Bandwidth = 1.0 Hz
FIGURE 3- FREQUENCY 'ARIATIONS
12
10
I I II
I
II
\
SOURCE RESISTANCE ~ ..-~1c=lmA
"\
"\.
"±
I'
~
II'" .....
-=
o
0.1
I
r
"'f-..
~
200 n
10
/
SOURCE RESISTANCE = 200 n
Ie = O.SmA
/
/
./
"
~
:r-
4102040
o
100
0.1
I. FltEQUENCY 1kHz)
"l
'"
0.2
0.4
/ ' Ic-SOpA
/lc=IOOpi.y
""- Y'" /
-
I
0.4
r II
1/1 II /
/
/1. =O.s'J /
/
/
/
I
~-I~
12
L SOURCERESISTAllCE 500 n
f--Ie lOOpA
I
SOURCE RESISTANCE = III!l
Ic=SOpA
0.2
RlUIE 4 - SOURCE RESISTANCE
- I -11kHz
I
I
"\.
r--....
14
I
/
./
./
./ ./
....,
1.0
2.0
4.0
10
R.. SOURCE RESISTANCE IIISlI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-13
20
40
100
2N4123, 2N4124
h PARAMETERS
Va
•
= 10 V. f = 1 kHz.
T.
= 2S·C
mURE 1-1JU11IUT ADlmAllCE
FIIIURE 5- CURREIIT BAllI
300
100
200
50
..
~
i
!SIOO
,.
B
---
V
./
:.....-
-
.i70 .......
50
2.0
30
0.1
0.2
S.O
1.0
2.0
O.S
Ie. COlLECTOR CURRENT fInAl
1.0
10
0.1
FlllURE l-IIIPIIT IMPEDAllCE
20
..........
10
S.O
10
FlllURE • - VOLTAGE mDBACII RATID
10
.......
2.0
1.0
O.S
Ie. COlLECTOR CURRENT fInAl
0.2
7.0
~
S.O
......
ts
i
""
O.S
"-
f'O
~
~
"-
2.0
~
"
.""'
.........
)1.0
~
V
0.7
0.2
0.1
0.2
S.O
O.S
1.0
2.0
Ie. COlLECTOR CURRENT fInAl
0.5
0.1
10
2.0
0.5
1.0
Ie. COlLECTOR CURRENT CIlIA I
0.2
5.0
10
STATIC CHARACTERISTICS
FIGURE 9 - DC CURRENT GAIN
2.0
::r- -
I
T, = JI2S·J
1.0
.--
0.7
O.S
0.3
--
r-- r-....
r-
,...-
-WC
i'..
"
...... ~
~
"'-
........
I,..- f~
I
Ye.= IY
i'o
0.2
"
I~
""~
t\..
O. I
0.1
0.2
0.3
O.S
0.7
1.0
2.0
S.O
7.0' 10
3.0
Ie. COUECTOR CURRENT CmAl
20
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-14
30
50
70
100
200
2N4123, 2N4124
AGURE 10-COlLECTOR SATU.UION REGION
1.0
~
TJ
i
0.1
~
o.6
~
\
\
~
i!
!5 0.4
'\
~
8
\..
~ 0.2
o
.01
........
.02
'-
I--
.os
.03
.07
,
0.1
0.2
0.3
0.5
BASE CURRENT IrnAl
0.7
v I I.U IIi!
~I"" TIi'~li ~ ~
1. 0
--
o.1
o.6
...
]...
2.0
3.0
V.. @VeE
~
live 10< VeEI""
0
IV
t-
.5 11.
l.- 1-111
III
50
10
20
Ie. COLLECTOR CURRENT ImA'
10
I 11 I I
~55'C
-2.
100
TO +2S'C
[ 11"N1 111 1
0
VeEly" @ lelli ~~
5.0
7.0
-55'C TO +2S'C
,J
2.0
5.0
~~5'~-
... ...
.5
o.2
f-
I I I 1I
5
~
o. 4
1.0
1.0
I.0
1111111
I~ Js'c
r---
FIGURE 12 - TEMPERATURE COEFFICIENTS
FIGURE 11 - "ON" VOLTAGES
TJ
1\..
r-I~
o
•
)(10 rnA
30 rnA
lOrnA
le-IrnA
2S'C
200
j..-f-
ev. for YIEIMtt
1 11 I 1
111 1 1
olY
o
+~5TI + \2SjC
Vi-'
20
~
~
~
~
rn
~
Ie. COllECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-15
~
~
200
•
2N4125
2N4126
MAXIMUM RATINGS
Symbol
2N4125
2N4126
Unit
Collector-Emitter Voltage
Rating
VCEO
30
25
Vdc
Collector-Base Voltage
VCBO
30
25
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
200
mAde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25·C
Derate above 25"C
Po
1.5
12.0
Watt
mWrC
TJ, Tstg
-55to +150
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
~~'1 Emitter
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTORS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R9JC
83.3
Thermal Resistance, Junction to Ambient
R9JA
200
·CIW
·CIW
= 25·C unless otherwise
ELECTRICAL CHARACTERISTICS (TA
PNP SILICON
noted.)
Characteristic
Symbol
Min
2N4125
2N4126
V(BR)CEO
30
25
2N4125
2N4126
V(BR)CBO
30
25
V(BR)EBO
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
(lC
(lc
=
=
1.0 mAde, IE
10 !0>
......
20
/
/Ie - 100 pA..,
iii 8.0
!!
-t
20
40
100
h PARAMETERS
Ve.
=lOV. f =1 kHz. T. = 25"C
FIGURE 6- OUTPUT ADMmANCE
FIGURE 5- CURRENT GAIN
100
70
1
50
~
30
c
20
'a
i
!
j
V
/
L
,,/
-
10
I-'
7.0
5.0
0.1
Ie. COLLECTOR CURRENT (rnA I
0.2
0.5
1.0
2.0
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-17
5.0
10
2N4125,2N4126
FIGURE 8- VOLTAGE FEEDBACK RATIO
FleUR( 7-INPUT IMPEDANCE
20
•
10
.........
i'
10
7.0
f
S
~ 5.0
i
~J
"-
5.0
'\
!5
""
2.0
i
1
.........
20
"
1.0
3.0
~J
O.5
"........
1.0
~ ....
i---
O.7
0.2
0.1
2.0
O.S
1.0
Ie. COllECTOII CURRENT (mAl
0.2
O.S
0.1
10
S.O
O.S
0.2
S.O
2.0
1.0
10
Ie. COllECTOII CURRENT ImA ,
STATIC CHARACTERISTICS
FIGURE 9 - DC CURRENT GAIN
.0
-r---"
I +12~OC
TJ
+2S0C I
.0
I~'CI
.7
I
-..... "
.5
IV -
VeE
~
~
t'-~~
.3
~
I'
c
~ O.2
~
-..;::
O. I
0.1
0.2
O.S
0.3
0.7
1.0
3.0
S.O
7.0
10
Ie. COUECTOII CURRENT ImAl
30
SO
70
,
I
1
~
100
le-11I1A
I
\
10mA
200
\
2'
1\
-
"-
I..... "
~
.....
.
I'
-- -
.03
.OS
.07
0.1
01
I~
N
I'-r-.
r-
t- ~
.02
2~ob
,
1"-
4
TJ =
'IOOnIA I
301l1A
6
o.01
20
FIGURE 10 - COLLECTOR SATURATION REGION
I.0
•
2.0
0.3
0.5
CURRENT ImAl
0.7
1.0
MOTOROLA.SMALL-SIGNAL SEMICONDUCTORS
2-18
2.0
3.0
S.O
7.0
10
2N4125,2N4126
FIGURE 12 - TEMPERATURE COEFFICItIITS
FIGURE 11 - "ON" VOLlASES
.0
TJ = 25·C
VII''''I @lclI, = 10.....
1.0
~
~
V.. @Va
[
+25·C TO +l25OC
/JvcforVcE''''1
IV
-5SOC TO +25OC
0
i 'T"i--f....
I I
.&
8 -0.5
1/
.4
V
i_I.
I I .J.....I-'
III1
1.0
2.0
5.0
-2
10
20
50
Ie. COllECTOR CURR£NT fnIA)
100
/In ,.. VIEI.'1
200
I
o
I
CTO 2 C
I
I
I
20
40
&0
80 100 120 140
Ic. COLLECTOR CUIIRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-19
1;:0
rI j r
i5
I--'
5
~ I IJ5·~
·iTj~
"~
VCII"'I@lcli. = 10
IIII'
0
+2J·C
~
~-1. 0
.2
1:1
I
O.5
1&0
180 200
11
•
2N4264
2N4265
THERMAL CHARACTERISTICS
Symbol
Characteristic
2N4264J 2N4266
Unit
I
Vde
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
6.0
Vde
IC
200
mAde
Collector Current -
Continuous
15
12
30
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
'c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Vde
~~'~"
"
23
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
'CIW
Thermal Resistance, Junction to Ambient
ROJA
200
'CIW
Characteristic
1 EmItter
GENERAL PURPOSE
TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
15
12
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IE = 0)
V(BR)CEO
2N4264
2N4265
Vde
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
20
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
6.0
-
Vde
-
0.1
10
-
100
2N4264
2N4265
25
30
-
2N4264
2N4265
40
100
160
400
2N4264
2N4265
20
45
(lC = 30 mAde, VCE = 1.0 Vde)
2N4264
2N4265
40
90
(lC = 100 mAde, VCE = 1.0 Vde)(l)
2N4264
2N4265
30
55
2N4264
2N4265
20
35
Base Cutoff Current
(VCE = 12 Vde, VEB(off) = 0.25 Vde)
(VCE = 12 Vde, VEB(off) = 0.25 Vde, TA = 100'C)
IBEV
Collector Cutoff Current
(VCE = 12 Vde, VEB(off) = 0.25 Vde)
ICEX
pAde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 1.0 Vde)
hFE
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE
=
(lC = 200 mAde, VCE
1.0 Vde, TA = -55'C)
=
1.0 Vde)(l)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 100 mAde, IB = 10 mAde)(l)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 100 mAde, IB = 10 mAde)(l)
VBE(sat)
-
2-20
Vde
0.22
0.35
Vde
0.65
0.75
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
-
0.80
0.95
2N4264,2N4265
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25°C unless otherwise noted.)
I
Symbol
Min
t,-
350
-
MHz
Cibo
-
8.0
pF
Ceb
-
4.0
pF
(VCC = 10 Vde, VEB(off) = 2.0 Vde,
IC = 100 mAde, IB1 = 10 mAde) (Fig. 1. Test Condition C)
td
8.0
ns
15
ns
VCC = 10 Vde, (lC = 10 mAde, for t s)
(lc = 100 mA for tf)
IB1 = IB2 = 10 mAde) (Fig. 1, Test Condition C)
ts
-
Characteristic
Max
Unit
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
1.0 MHz)
1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
tr
20
ns
Turn-On Time
(VCC = 3.0 Vde, VEB(off) = 1.5 Vde,
IC = 10 mAde, IB1 = 3.0 mAde) (Fig. 1, Test Condition A)
ton
-
Turn-Off Time
(VCC = 3.0 Vde, IC = 10 mAde,
IB1 = 3.0 mAde, IB2 = 1.5 mAde) (Fig. 1, Test
Condition A)
toff
-
35
ns
Storage Time
(VCC = 10 Vde, IC = 10 mA
IB1 = IB2 = 10 mAde) (Fig. 1, Test Condition A)
ts
-
20
ns
Total Control Charge
(VCC = 3.0 Vde, IC
Condition B)
OT
-
80
pC
Fall Time
=
10 mAde, 18
=
tf
mAde) (Fig. 1, Test
15
n.
25
ns
(1) Pulse Test: Pulse Width = 300 p.s, Duty Cycle = 2.0%.
FIGURE 1 - SWITCHING TIME EQUIVALENT TEST CIRCUIT
CO=OR
A
•
C
Ie
Vee
I,
mA
10
10
100
n
n
3
10
10
3300
560
560
270
960
96
V
Ie
Csr ..... 1 YEileffl
pF
4
4
12
V,
V,
-
4.\5 10.70
4.65 6.55
4.65 6.55
I~I
V"I:~1Ft:-t--- T~H~~
~ ~~<2M
V,
V 10.55
V V V
1.5
-
2.0
6.35
Vee
i¥.i
<2M
PULSE WIDTH It,i = 300 ns
DUTY CYCLE = 2%
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-21
R,
2N4264,2N4265
CURRENT GAIN CHARACTERISTICS
•
FIGURE 2 - MINIMUM CURRENT GAIN
100
2N4264 t - -
70
Vee -IV
50
i
130
-- -- --
~
8
120
r--
TJ = 12S'C
~~
I-
-IS'C
~
...-
r- r--..
r- I- ::::~t'-
'2S'C
-
-SS'C
f-
~
I0
2.0
1.0
30
S.O
7.0
20
10
-r--
~
r- I- .... ~
-.............
--...........
50
30
~
70
100
~
:--.....
200
Ie, COllfCTOR CURRENT ImAl
200
-
~~
.. 100
ii
I
J,.oo'"
0i".oo""
8 50 ~
1
30
----
~
2S'C
..-
J,.oo'"
-
-IS'C
1,..0 ~
~
I-'"
~
V
- r-"""
TJ - 12S'C
--
-
-SS'C
~
2"4265
vc,= IV
.....
r---
:'"
t"::
-- r-..
--",
~~
""'r--
I- ,....
."'"
~ ['.,........
r-....
I-'"
-..........:
..........
~
20
1.0
2.0
3.0
S.O
7.0
20
10
30
so
70
100
200
Ie, COllECTOR CURRENT ImAl
FIGURE 4 - TURN·OFF WAVEFORM
FIGURE 3 - QT TEST CIRCUIT
270 Il
+lov~1
t'l
boV
o
PULSE WIDTH It,l = 5
e'
1--<1 ns
I
I
_.1_
-1~<4pf
_oJ
TIME - -
NOTE 1
When a transistor Is held In a conductive state by a base current,
If 18 were suddenly removed, the transistor would continue to con·
duct until Qs is removed from the active regions through an external
path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a
charge. QT. of opposite polarity, equal in magnitude. can be stored on
an external capacitor, C, to neutralize the internal charge and con·
siderably reduce the turn-otf time of the transistor. Figure 3 shows
the test circuit and Figure 4 the turn-off waveform. Given Qr from
Figure 13, the external C for worst-case turn.off in any circuit is:
C = Q,IC:. V, where C:. V Is defined in Figure 3.
I•• a charge. Qs, is developed or "stored" in the transistor. Qs may be
+
written: Q. = Q,
Qv + Qx.
QI Is the charge required to develop the required collector current.
This charge Is primarily a function of alpha cutoff frequency. Qy is
the charge required to charge the collector-base feedback capacity.
Qx is excess charge resulting from overdrive, i.e., operation In
saturation.
The charge required to turn a transistor lion" to the edge of saturation is the sum of Q. and Qv which Is defined as the active region
charge, QAo QA = lilt, when the transistor Is driven by a constant current step (III) and I"
Ie
< < h,;'
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-22
2N4264,2N4265
"ON" CONDITION CHARACTERISTICS
FIGURE 5 - COLLECTOR SATURATION REGIO"N
1.0
\
le-IO mA
SOmA
2N4264
\ 100mA
\ 200 mA
\
~
\
I""-
0
0.1
0.2
0.3
........... l"-
--
O.S
0.7
1.0
1.0
2.0
3.0
I,. BASE CURRENT lmAl
le-IOmA
---
1\
r--
2
0
0.1
0.2
0.3
O.S
r-1.0 t--
0.7
1.0
I.......
..
....
z 0.6
_
MAX Ve'lu'l
,;'
~ 0.41-+-1-+-1-+++-H+--+-+-+-+-n-rTin:,,~~
J
0.21=t=t=l=f=#ffiF=:I=I====1H--l-+-W-I.J-~
O~~~~~~~~~~~~~~~
1.0
2.0 3.0
S.O 7.0 10
20
30
SO 70 100
TJ -2S'C- t-
"
200mA
r--
I'-
S.O
7.0
10
20
so
30
FIGURE 7 - TEMPERATURE COEFFICIENTS
~~ 0.8·~:11j~~m~ti-~~j~MI1Nvi~I;.-~I-=j
....
so
30
\
2.0
3.0
I,. BASE CURRENT lmAl
t-i-t++tt-H-H-r-H
lJ..l.H"'rttI"'7M
i
20
l"- t--
1.0
IIIIII
10 +-i--H+++-I-f-I-f-*'MI::'''''..
V.......lul-.l-+l.I
.....
TJ - 2S'C
10
2N4265
I I
lei I, -
7.0
Il.
FIGURE 6 - SATURATION VOLTAGE LIMITS
1.2
S.O
1\ 100mA
\
SOmA
i\
4 ""'---
""- ~
f'..
\
8
6
\
,
I
TJ -2S'C- t--
li
200
Ie. COLLECTOR CURRENT lmAl
G
3;
12s.l to IJCI _
O.S
8vc lor Ve'I"'1
0
~
I STto2rl-
G
r--
it
8 -0, S
ol/r
12S'~ to 12S~CI
0
"'jlorV..
S
-2.
o
40
~~
r-:::
ro-
80
-
I SS'C to 2S'CI
11
120
Ie. COLLECTOR CURRENT lmAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-23
t=
.§
160
200
•
2N4264,2N4265
DYNAMIC CHARACTERISTICS
•
FIGURE .8 - DELAY TIME
200
FIGURE 9 - RISE TIME
,~
~~',,!:ov -
r\.'
100
le/l,-IO I - - TJ -25°C
- - - TJ -125°C t-
'~
100 ~
TJ - 25°C
O
70
.. 50
r-.
;: 30
20
I'\.
"- 1"l"- I'. l~
~
,,~
r~
r- -
2V
i'.I"1'"
10
7.0
5.0
1.0
5.0
10
20
'0,;
Vee- 3V
~
0
OV
2.0
Vee-IOV
~
!,,@V"loIfl-3V
i
.,~
,....
200
100
50
7.0
5.0
1.0
200
Ie. COLLECTOR CURRENT (mAl
2.0
.. -
10
5.0
,
~
'"'l~
~
'"
-I?
i"o
50
100
200
Ie. COUECTOR CURRENT (mAl
,,
FIGURE 10 - STORAGE TIME
FIGURE 11 - FALL TIME
200
K "~ 1"-
100
I
(
I
_
J~!;.llhv
TJ=25°C
~
'7'.- - TJ .= 125°C b::
70
"I
le/l,=~
.~
I~
le/ l,-10
~+-+--+-+-f-+++++-+-+-+
Is'" Is - It ~ - I I li'llli'll -t-
7.0
~l'"
0
~ I..::::
7.0
5.0:'::--',-*--L--'-::'-::-U-I.J..f::-~:--'-....J...:'::-,I..J....I..':
III~
1-,:200
u
w
u
w ~
50
~
5.0
1.0
2.0
5.0
10
20
0
100
200
Ie. COlLECTOR CURRENT (IlIA!
Ie. COLLECTOR CURRENT (mAl
FIGURE 12 - JUNCTION CAPACITANCE
FIGURE 13 - MAXIMUM CHARGE DATA
10
100 0
7.0
2.0
0.1
lei I,
10
i:::li;o~,
/
/
:--.
~
3.0
1=~
500 l"-t- __ •
r--. ~
Cibo
1--
1--
700
MAX
- - - TYP
!'-
.- 0.2
..... i:::':-
-
-
1-- "'"I-
a,
1.0
2.0
=Vee=3V
0
Cob....
50
=
-
30
5.0
/
~~
..... r-.,
--1-\
0.5
....~
20
1.0
10
REVERSE BIAS (Vdc)
IL
Vee-IOV
I
I II
Vec=3Y
2.0 3.0
5.0 7.0 10
20
30
Ie. COlLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-24
50 70 100
200
2N4400
2N4401
MAXIMUM RATINGS
Rating
Symbol
Value
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
600
mAde
Collector Current -
Continuous
Unit
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
1.5
12
Watt
mWrC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
I
3 Collector
2~
,
1
B.se~
,I.
2
1 Emitter
3
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
R/IJA
200
°CIW
ELECTRICAL CHARACTERISTICS (TA
NPN SILICON
~ 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lc ~ 1.0 mAde, IB ~ 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lc ~ 0.1 mAde, 'E ~ 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 0.1 mAde, IC ~ 0)
V(BR)EBO
6.0
-
Vde
IBEV
-
0.1
pAde
ICEX
-
0.1
pAdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Current
(VCE ~ 35 Vde, VEB
~
0.4 Vde)
Collector Cutoff Current
(VCE ~ 35 Vde, VEB ~ 0.4 Vde)
ON CHARACTERISTICS(1)
DC Current Gain
(lC ~ 0.1 mAde, VCE
hFE
~
1.0 Vde)
2N4401
20
-
~
1.0 Vde)
2N4400
2N4401
20
40
-
1.0 Vde)
2N4400
2N4401
40
80
-
(lc
~
1.0 mAde, VCE
(lc
~
10 mAde, VCE
(lC
~
150 mAde, VCE
~
1.0 Vde)
2N4400
2N4401
50
100
150
300
(lC
~
500 mAde, VCE
~
2.0 Vde)
2N4400
2N4401
20
40
-
~
Collector-Emitter Saturation Voltage
(lc ~ 150 mAde, 1B ~ 15 mAde)
(lc ~ 500 mAde, IB ~ 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC ~ 150 mAde, IB ~ 15 mAde)
(lc ~ 500 mAde, IB ~ 50 mAde)
VBE(sat)
-
-
Vde
-
-
0.4
0.75
Vde
0.75
-
0.95
1.2
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc ~ 20 mAde, VCE ~ 10 Vde, f ~ 100 MHz)
Collector-Base Capacitance
(VCB ~ 5.0 Vde, IE ~ 0, f
2N4400
2N4401
tr
Ceb
~
100 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-25
MHz
200
250
-
-
6.5
pF
•
2N4400, 2N4401
,.
ELECTRICAL CHARACTERISTICS (continued)
(TA
=
25·C unless otherwise noted)
Symbol
Min
Max
Unit
Ceb
-
30
pF
0.5
1.0
7.5
15
0.1
8.0
20
40
250
500
hoe
1.0
30
p.mhos
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IBI = 15 mAdc)
td
-
15
ns
tr
-
20
ns
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
-
225
ns
tf
-
30
ns
Characteristic
Emitter-Base Capacitance
(VBE = 0.5 Vdc, IC = 0, f
=
100 kHz)
Input Impedance
(lc = 1.0 mAdc, VCE
=
10 Vdc, f
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCE
=
10 Vdc, f
=
1.0 kHz)
Small-Signal Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc, f
=
1.0 kHz)
Output Admittance
(lC = 1.0 mAdc, VCE
=
1.0 kHz)
k ohms
hie
2N4400
2N4401
h re
=
10 Vdc, f
X 10-4
-
hfe
2N4400
2N4401
SWITCHING CHARACTERISTICS
Delay Time
RiseTime
Storage Time
Fall Time
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 1 - TURN-ON TIME
-I
FIGURE 2 - TURN-OFF TIME
+30V
I- 1.0 to 100 p.s,
20~~_
:'T,:V
DUTY CYCLE = 2.0%
-2.0 V
-14 V
l---J
: CS"< 10 pF
< 2.0 ns
+30V
I- 1.0 to 100 /J-S,
UTY
+ 16 V 8 F C>Y_C_L_E_=...,2"."OO"lIo_.-t--t:-l.J 200_:_
0
~,.-
1.0 kG
_\
_I
-
~T-
1.0 kG
L
I
:CS"< 10 pF
<20ns
___ J
Scope rise time < 4.0 ns
"Total shunt cspacitance of test jig connectors, and oscilloscope
TRANSIENT CHARACTERISTICS
- - - 25·C
FIGURE 3 -
- - - 100·C
CAPACITANCES
FIGURE 4 - CHARGE DATA
10
7.0
5.0 f-f-3.0
30
~
1==
,.. I'--
20
i
~
10
~
7.0
~
r--.
..... ~CObO
~
w
!i
'"ud
5.0
........
3.0
Ccb f-
Vee
lelia
30V
10
"/
".
2.0
".
1.0
0.7
0.5
/"
/
0.3
""'1--1.
0.2
2.0
0.1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
Or
/ V
50
10
20
30
50
70
-
,./
100
Ie, COLLECTOR CURRENT (rnA)
REVERSE VOLTAGE IVOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-26
200
DA
300
500
2N4400, 2N4401
FIGURE 5 - TURN-ON TIME
RGURE 6 -
100
70
g
~..,
"-
50
1'-"
30
1"-
1'\ "-
"'
'\
'\
10
I
"\ ~ ~
r-.,,,.. ....- ~~
7.0
"'
50
30
70
100
'"
I
~ ~17' I,
~~
~ I~
II
~
>=
..,
VV
N~
20
~
7.0
"
5.0
200
300
500
20
10
STORAGE TIME
-
....
RGURE 8 -
-,
100
<[
~.
"
~.
70
f-
.."
~
50
""
....
........ ~
100
200
300
Vee
30V
500
FALL TIME
"'\:
"-
--
,-
~
--
.......
- --
~
'-
10
50
-
-
111=112
:e/:.~I~
~
Icll.=I~
"-'
"-
70
:.-
~
ts' = ts - Yeti
IBI = IB2
IdlB = 10 to 20
-...
~
70
100
~
!:Ii:
'"a:
50
30
IC. COLLECTOR CURRENT ImAI
300
>=
w
--- -t;::
-
~10
IC. COLLECTOR CURRENT ImAI
FIGURE 7 -
- t-
:\"
30
~
~
5.0
20
I
VCC 3OV- fIdlB = 10 - t-
~~
50
I,@VCC = 30V - f1,@Vcc = 10V - fId@VEB=2.0V - fId@VEB=O
'<
r-."
70
I I I
"-
1,\
10
10 I-- ~
IdlB
"-
:'\ l'\.
20
200
RISE AND FALL TIMES
100
7.0
5.0
30
10
20
30
50
70
100
200
300
10
500
20
30
50
70
100
200
300
500
Ie. COLLECTOR CIJIIROO (IlIA)
IC. COLLECTOR CURRENT ImAI
SMALL-SIGNAL CHARACTERISTICS
NOISE RGURE
,
10
8.0
~
~
::::l
6.0
FIGURE 9 -
l\
~
I~
z
u:
FREQUENCY EFFECTS
III... II 11111111 I
IC
IC
Ie
IC
=
=
=
=
11111 II 1111
I
RS = OPTIMUM
SOURCE
RESISTANCE
1.0 mA. RS = 1500
500 pA. RS = 200 0
100 pA. Rs = 2.0 kO
50 pA. RS = 4.0 kO
4.0
~
::::l
V
6.0
.Ill
en
C5
z
u:
4.0
2.0
0.01 0.02
~
2.0
"l1li
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I. FREQUENCY IkHzI
i I 1111
"'
~
'"u::w
SOURCE RESISTANCE EFFECTS
~ll0~HII 1111
- .I
8.0
z
z
FIGURE 10 -
10
III
'"u::w
jg
= 10 Vde. TA = 25°C
Bandwidth = 1.0 Hz
VCE
Ix
IC=50pA
IC = 100pA
IC = 500pA
IC = 1.0 mA
I
/
[( V
II
~
50 100
/
IJ
/
/
-
200
500
1.0 k 2.0 k
V
5.0 k 10 k 20 k
RS. SOURCE RESISTANCE 10HMSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-27
V
I'
50 k 100 k
•
2N4400, 2N4401
VCE
•
=
h PARAMETERS
10 Vdc, f = 1.0 kHz, TA
FIGURE 11 -
300
200
z
~
I-
~
a::
:::J
'-'
.i
100
FIGURE 12 -
l- ~I--
Ioc-
""
V
,..,.
20
./
20 k
z
~
10 k
~
;i1
5.0 k
0.3
0.5
0.7
.......
r-..
"'-
FIGURE 13 -
~
~
10
7.0
5.0
Q
~
""
~
l!!
w
~
!:i
§Z
1
.....-
.....
:-.... "-
L
~
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
r--.
1.0
2.0
3.0
r-....
I-
~
.;,
"'- .....
""""" ::--.
,
.c
1.0 k
5.0 7.0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
r..... .......
2.0 k
t-..
t"'-
500
10
0.1
0.2
0.3
0.5 0.7
Ie COLLECTOR CURRENT (mAl
¢
INPUT IMPEDANCE
C§
I II
0.2
0.1
=-Q
:t:
....... ....... 2N4401 UNIT 1
50
::-...
u;
f-I-- 1-l- f- f-
70
30
25'C
CURRENT GAIN
50 k
-
=
selected from both the 2N4400 and 2N4401
lines, and the same units were used to develop the correspondingly numbered curves
on each graph.
This group of graphs illustrates the relationship between hfe and other "h" parameters
for this series of transistors. To obtain these
curves, a high-gain and a low-gain unit were
1.0
2,0
3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (mAl
VOLTAGE FEEDBACK RATIO
FIGURE 14 -
OUTPUT ADMmANCE
100
~
.......
E
3.0
2.0
I.......
f'..
1.0
0.7
0.5
50
.:;
I'.
V
V
t.....
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
~
20
::;
10
gz
~
I-
~
~
V
~~
..... 1::""
0
I..0Il
J
l.oIIII
2.0
1.0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
2N4401 UNIT 1, :
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
5.0
:::J
0.3
0.2
10
VI,.;'
---
"'"
1-"":10-' ,.....
t-" i...-"
-I--""
0.1
0.2
"
0.3
" J 1 I II
0.5
Ie COLLECTOR CURRENT (mAl
0.7
1.0
2.0
3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (mAl
STATIC CHARACTERISTICS
FIGURE 15 -
DC CURRENT GAIN
3.0
-VCE = 1.0V
••• VCE = 10V
2.0
~
IZ
~
:::J
'-'
1.0
C
~
::;
0.7
0
0.5
a::
z
-1--
i
-I---
.-.-
f--
0.3
0.2
0.1
-
- -~~
---- -0.2
0.3
-- -- - --
--~
-I--
0.5
0.7
1.0
I-~
-
2.0
J.J..LI--
-
~
10- ~ ~125~
f-
3.0
5.0
~~t25'C
:.u
1--1:1'
-.
- '-
-I-
r-t--
1"- ...
~
-"
--
~'C
7.0
10
I"-
20
30
Ie COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-28
...
...
50
70
100
200
....
.......
300
~
500
2N4400, 2N4401
FIGURE 16 -
COLLECTOR SATURATION REGION
1.0
US
TJ = 25"C
'::;
~
0.8
1
w
"'i:3
0
>
a:
~
ii'i
a:
~
0
'-'
w
~
0.6
Ic=1.0mA
10mA
100 rnA
'r--...,
1\
0.4
\
\
0.2
r--.r-.,
>'-'
0.01
0.02
0.03
0.05
0.07
\.
500 rnA
-....
I"'-b ~
~
"-
["-.. t-....
0.1
--
r--
0.2
0.3
0.5
0.7
1.0
2.0
t-t-3.0
5.0
7.0
10
20
30
50
IB, BASE CURRENT (mAl
FIGURE 17 -
1.0
I-
"ON" VOLTAGES
T~ =12!"~
I1111 II
FIGURE 18 -
1111111
VBE(satJ @ Io'la = 10 ./
0.8
11111 II
US
'::;
0
l-
2w
"'
i:3
0
>
"""
1111 II I
""I'
I-'"'
{}.,fc for VCE(satl
U
vaE@vc~111I1Ot I
0.6
TEMPERATURE COEFFICIENTS
+0.5
'>
-0.5
E
I-
i':'i
u -1.0
~
0.4
~
0
'-'
0.2 I-
VCE(satl @ Io'la = 10
JlI I I I I
I-
II
0.1
0.2
0.5
1.0
-2.0
"""
2.0
5.0
{}.,fa for VaE
lllL
I
11111
-1.5
11111 I
-2.5
10
20
50
100
200
500
IC, COLLECTOR CURRENT (mAl
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-29
200 500
•
•
2N4402
2N4403
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Rating
Collector Current -
Continuous
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
~~'~"'
Total Device Dissipation @ TA
Derate above 25·C
=
25·C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25·C
=
25·C
Po
1.5
12
Watt
mWrC
TJ, Tstg
-55to +150
·C
Symbol
Max
Unit
GENERAL PURPOSE
TRANSISTORS
Thermal Resistance, Junction to Case
R6JC
83.3
·C/W
PNP SILICON
Thermal Resistance, Junction to Ambient
R6JA
200
·C/W
Operating and Storage Junction
Temperature Range
"
23
THERMAL CHARACTERISTICS
Characteristic
1 Emitter
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
V(BRICEO
40
Collector-Base Breakdown Voltage
V(BRICBO
40
V(BR)EBO
Max
Unit
OFF CHARACTERISTICS
(lC = 1.0 mAde, IB = 0)
= 0.1 mAde, IE = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAde, IC = 0)
Base Cutoff .Current (VCE = 35 Vde, VBE = 0.4 Vde)
Collector Cutoff Cu rrent (VCE = 35 Vde, VBE = 0.4 Vde)
(lC
Vde
5.0
-
IBEV
-
0.1
pAde
ICEX
-
0.1
pAde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE
-
hFE
=
1.0 Vde)
2N4403
30
-
-
(lC
=
1.0 mAde, VCE
=
1.0 Vde)
2N4402
2N4403
30
60
(IC
=
10 mAde, VCE
=
1.0 Vde)
2N4402
2N4403
50
100
-
2N4402
2N4403
50
100
150
300
20
-
-
0.4
0.75
(lC
=
(lC
= 500 mAde, VCE =
150 mAde, VCE
= 2.0 Vde)(1)
Both
2.0 Vde)(1)
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lc = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
VBE(sat)
-
Vde
Vde
0.75
-
0.95
1.3
150
200
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 10 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
Emitter-Base Capacitance
(VBE = 0.5 Vde, IC = 0, f
Input Impedance
(lC = 1.0 mAde, VCE
=
=
=
2N4402
2N4403
tr
MHz
Ceb
-
8.5
pF
Ceb
-
30
pF
140 kHz)
140 kHz)
10 Vde, f
=
ohms
hie
1.0 kHz)
2N4402
2N4403
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-30
750
1.5k
7.5k
15k
2N4402,2N4403
ELECTRICAL CHARACTERISTICS
(continued) (TA
= 25°C unless otherwise
noted)
Characteristic
Voltage Feedback Ratio
(lc = 1.0 mAde, VCE
10 Vde, f
=
1.0 kHz)
Small-Signal Current Gain
(lc = 1.0 mAde, VCE = 10 Vde, f
=
=
1.0 kHz)
Output Admittance
(lC = 1.0 mAde, VCE
=
1.0 kHz)
=
10 Vde, f
Symbol
Min
Max
Unit
h re
0.1
B.O
X 10-4
30
60
250
500
1.0
100
13
-
hfe
2N4402
2N4403
hoe
/LmhOS
SWITCHING CHARACTERISTICS
= 2.0 Vde,
= 15 mAde)
td
-
15
ns
tr
-
20
n.
(VCC = 30 Vde, IC = 150 mAde,
IB1 = IB2 = 15 mAde)
ts
-
225
ns
tf
-
30
ns
(VCC = 30 Vde, VBE
IC = 150 mAde, IB1
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width", 300 /LS, Outy Cycle'" 2.0%.
FIGURE I - TURN·ON TIME
,
ff
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 2 - TURN·OFF TIME
-30V
4-
200 ~!
<2n5
-30V
200 ~l
+ -<2O",
+14V
°
-.1.-
-T-
IklJ
rcs' < IOpf
\
___ ...JI
-16V
1..-
16V
IOloIOO/tsDUTYCYCLE
Scopensellme· 4ns
"Tolalshunl capacllance of lesl til!.
connectorS,andOSCllioscope
2%
...... 1
f.-
I
_1_
>-----~Ar--~--4r~
1M!
-T: Cs' ~ 10 pr
___ J
1010 lOO/J.5. DUTYCYCl[
2%
TRANSIENT CHARACTERISTICS
- - 25·C
- - -
lOO·C
FIGURE 3 - CAPACITANCES
FIGURE 4- CHARGE DATA
30
I-
20
~
~
I
10
7.0
5.0
.......
-r--.
C••
~
~
~
r-
7.0
=
30V
10 :::;
,
3.0
r--
.......
10
Vee
Ie/I,
C,.
5.0
t-
d
. . . . r-.
2.0
1.0
0.7
0.5
0.3
3.0
-
-
--
Q,
1/
""
~
0.2
2.0
'"
,
/
,
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
10
20 30
20
30
50
70
100
Ie, COllECTOR CURRENT !mAl
REVERSE YOLTAGE (YOlTSl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-31
200
300
500
,.
2N4402,2N4403
FIGURE 6 - RISE .TIME .
FIGURE 5 - TURN·ON TIME
100
70
30
'" ''\
, "-
20
'-
so
}
..._.
!
Ie/I,
=rr-
10
I'
100
70
I
I'\..
!,@vee -lOV
!,@vee- IOV _
t.@V"loIIl-2V _
t.@V"tolll- O
I'...:
'\
10
["::
""-
...........
5.0
.,
[":
7
t~
~
r---.
10
7.0
5.0
so
30
-
I';~
i-"v ./
.........
-
~
-
,
7.0
20
"
--
"" i'...
10
Vee lOV
Ie/I, -10
"
so
70
200
100
300
10
500
20
30
50
Ie, COllECTOR CURRENT (mAl
70
200
100
300
500
Ie, COLLECTOR CURRENT (mAl
FIGURE 7 - STORAGE TIME
200
}
100
!
70
...
I
In
I
- '-
t:::. 1
SO
;"
r--
-
--
,
lell,-20
~
I
le/I,-IO -
.\
\I\; ,
1"-1,,
It-I.-tnt,
1\\'
,\\
30
,\
20
10
20
30
50
70
100
200
300
Ie, COLLECTOR CURRENT tmAl
"
500
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGUR(
VCE = 10 Vdc, TA = 2SoC
FIGURE 8 - FREQUENCY EFFECTS
Bandwidth = 1.0 Hz
10
FIGURE 9 - SOURCE RESISTANCE EFFECTS
10
'"\
1\
1\1\
k""
.....
le- lmA,R,-430n
Ie - 5OOpA,R, - soon
Ie - SO pA, R, - 2.7 k!l
Ie - 100 pA, R, - \.6 k!l
IR
1\
UJz
\
..
J
le-SOpA
lOOpA
500pA
lmA
......
'\~ ......
1_loWl~~IM ~~RC~ !~ISTANCE
~
~
~~
1'11111111 II 11111111 I
o
1111
to-
.05 0.1
0.2
0.5 1.0 2.0
5.0
10
20
SO 100
SO
t, FREQUENCY 1kHz!
./
lllkf
100
200
500
Ik
2k
5k
R" SOURCE RESISTANCE 10HMSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-32
/
,/
1111
o
.01 .02
/
~V
I
10k
20k
SOk
2N4402,2N4403
h PARAMETERS
VeE
=10 Vde. f =1 kHz. TA =2S"C
This group of graphs illustrates the relationship be·
tween
and other "h" parameters for this series
of transistors. To obtain these curves, a high·gain
2N4402 and 2N4403 lines. and the same units
were used to develop the correspondingly·
numbered curves on each graph.
h,.
II
and a low-gain unit were selected from both the
FIGURE 10 -
CURRENT GAIN
FIGURE 11 -
1000
lOOk
700
50k
500
~
300
I
200
i
100
I-_I-f-
-
'-'
70
~
-
,"-..
II
0.2
0.3
0.5
0.7
10k
fil
5k
;0
2k
~
2N4402 UNIT I
2N4402 UNIT 2
l0.1
e'"
~
2N4403 UNIT I
'~ l' 2N4403 UNIT 2
.J
50
30
/'
1.0
2.0
200
100
II
3.0
5.0
Ik
500
7.0 10
0.1
0.2
0.3
Ie. COLLECTOR CURRENT (mAde)
FIGURE 12 -
VOLTAGE FEEDBACK RATIO
10
!S
<>
5.0
i
'"
2.0
:::
1.0
~
r-..
.....
I'
~
--
~
1
2N4403
2N4403
2N4402
2N4402
V
UNIT
UNIT
UNIT
UNIT
FIGURE 13 -
I
2
I
2
I"~
,,/
~
0.5
...
50
co
20
......
10
L---
<>
5.0
~
0.2
2.0
0.1
1.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0 10
OUTPUT ADMmANCE
100
g
j
0.1
1.0
500
V
i"-..
0.5 0.7
Ie. COLLECTOR CURRENT (mAde)
20
1:
2N4403 UNIT I
2N4403 UNIT 2
2N4402 UNIT I
2N4402 UNIT 2 ,
20k
~
"-
-I-
e-
INPUT IMPEDANCE
2.0
3.0
5.0
7.0 10
£
c:"
~
-"
b---0.1
0.2
0.3
Ie. COLLECTOR CURRENT (mAdel
0.5
0.7
1.0
2N4403 UNIT I
2N4403 UNIT 2
2N4402 UNIT I
2N4402 UNIT 2
2.0
3.0
5.0
7.0 10
Ie. COLLECTOR CURRENT (mAdel
STATIC CHARACTERISTICS
FIGURE 14 -
3.0
I
I
t---_ YeE-IY
2.0 1 - - - - - YeE-IOY
I
'i!
'"
!il
0.7
0.5
i
I/- ts:t
- -
-
- -
,..- f-r-"
1::-
-- - -- -
-
--
25'C
- -
b:' "'-"
55'C
-r-~
-
..........
~
_1-
1--
-
---
f--
1.0
'-'
.fd
-- - -l- - l-+- - ----
1-
~
DC CURRENT GAIN
I
b-.,
(--
,\\l"'",
-.......
0.3
l'\"-
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
Ie. COLLECTOR CURRENT ImA}
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-33
50
70
100
200
300
500
2N4402,2N4403
RGURE 15 - COLLECTOR SATURATION REGION
•
1.0
;
~g
\
0.8
le~
0.6
lmA
10mA
lOOmA
\
\
;:
;
~.
~
500mA
\.
ffi
0.4
I\,
0.2
I-- r-
.........
0.005
0.01
"-
0.02
0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
"-
........
-
~
3.0
5.0
7.0
20
10
30
50
I,. BASE CURRENT (mAl
FIGURE 17 - TEMPERATURE COEFFICIENTS
FIGURE 16 - "ON" VOLTAGES
1.0
-
I I 111111
I
I 1111111
TJ
I I
I I I IIIII
~ 25°C
0.8
+0.5
I
V
V"'(N'I@ lell, ~ 10
I I I I IllIlJ.-I-
;
0.6
~
0.4
III1111
VlElo_I@VeE
===
11111111 I
11111111 I
Ovc for
i-
P
I
VCEI"'I
-0.5
~
10V
ffi -1.0
<3
iii
V
8 -1.5
0.2
-2.0
~~:·;~~I
VeE(,,'1 @Ie/l, -10
III
0.1
0.2
0.5
1.0
2.0
5.0
10
111,1111
-2.5
20
50 100
200
0.1 0.2
500
0.5
1.0
2.0
5.0
10
20
Ie. COLLECTOR CURRENT (mAl
Ie COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-34
V
50
100 200
500
2N4409
2N4410
MAXIMUM RATINGS
Symbol
2N4409
2N4410
Collector-Emitter Voltage
Rating
VCEO
50
80
Vde
CASE 29-04, STYLE 1
Collector-Base Voltage
VCBO
80
120
Vde
TO-92 (TO-226AA)
Emitter-Base Voltage
VEBO
5.0
Vde
IC
250
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
~
25'C
PD
625
5.0
mW
mW/,C
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
PD
1.5
12
Watts
mW/,C
TJ, Tstg
-65 to +200
'c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Charactaristic
•
Unit
Symbol
Max
Unit
Thermal Resistance, Juncti.on to Case
RruC
83.3
'CIW
Thermal Resistance, Junction to Ambient
RruA
200
'CIW
AMPLIFIER TRANSISTORS
NPN SILICON
Refar to 2N5550 for gl'llphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
V(BR)CEO
50
80
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lC ~ 500 IlAde, VBE = 5.0 Vde, RBE
2N4409
2N4410
Vde
V(BR)CEX
~
21114409
2N4410
8.2 kohms)
Collector-Base Breakdown Voltage
(lC = 10 IlAde, IE = 0)
80
120
-
80
120
-
Vde
V(BR)CBO
2N4409
2N4410
Emitter-Base Breakdown Voltage
(IE = 10 IlAde, IC ~ 0)
V{BR)EBO
Collector Cutoff Current
(VCB = 80 Vde, IE = 0)
(VCB = 80 Vde, IE ~ 0, TA = 100'C)
(VCB = 100 Vde, IE ~ 0)
(VCB = 100 Vde, IE = 0, TA = 100'C)
ICBO
2N4409
2N4409
2N4410
2N4410
Emitter Cutoff Current
(VBE = 4.0 Vde, IC ~ 0)
Vde
-
5.0
-
Vde
IlAde
-
0.01
1.0
0.01
1.0
lEBO
-
0.1
IlAdc
hFE
60
ON CHARACTERISTICS
DC Current Gain
(lC ~ 1.0 mAde, VCE ~ 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
(lC = 1.0 mAde, IB
~
0.1 mAde)
(lC = 1.0 mAde, IB = 0.1 mAde)
(lC = 1.0 mAde, VCE = 5.0 Vde)
VCE(sat)
60
400
-
-
-
0.2
Vde
0.8
Vdc
0.8
Vdc
300
MHz
VBE(on)
-
fy
60
VBElsat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 10 Vde, f = 30 MHz)
Collector-Base Capacitance
(VCB = 10 Vde, IE ~ 0, I
Emitter-Base Capacitance
(VBE = 0.5 Vdc, IC = 0, I
~
~
Ceb
-
12
pF
Ceb
-
50
pF
140 kHz, emitter guarded)
140 kHz, collector guarded)
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(2) fy ~ Ihlel' Itest.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-35
•
2NS086
2NS087
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
~
Total Device Dissipation @ TC
Derate above 25'C
~
IC
50
mAde
PD
625
5.0
mW
mWf'C
PD
1.5
12
Watt
mWf'C
TJ, Tstg
-55 to +150
·C
25'C
25'C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~--EQ
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
R/lJC
125
'CIW
R/lJA(I)
357
'CIW
AMPLIFIER TRANSISTOR
PNP SILICON
(1) RBJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA ~ 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lc ~ 1.0 mAde, IB ~ 0)
V(BR)CEO
50
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 JJAdc, IE = 0)
V(BR)CBO
50
-
Vdc
-
10
50
-
50
2N5086
2N5087
150
250
500
800
2N5086
2N5087
150
250
2N5086
2N5087
150
250
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 10 Vdc, IE = 0)
(VCB ~ 35 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 100 JJAdc, VCE = 5.0 Vdc)
(lc = 1.0 mAde, VCE
(lc
~
~
-
hFE
5.0 Vdc)
10 mAde, VCE = 5.0 Vdc)(2)
-
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.3
Vdc
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vdc)
VBE(on)
-
0.85
Vdc
IT
40
-
Ccb
-
4.0
150
250
600
900
2N5086
2N5087
-
3.0
2.0
2N5086
2N5087
-
3.0
2.0
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 JJAdc, VCE ~ 5.0 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 100 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(lC = 20 JJAdc, VCE = 5.0 Vdc, RS = 10 k ohms,
f = 10 Hz to 15.7 kHz)
(lC ~ 100 JJAdc, VCE
f = 1.0 kHz)
~
5.0 Vdc, RS = 3.0 k ohms,
NF
(2).•Pulse Test: Pulse Width .. 300 fJ.$, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-36
pF
-
hfe
2N5086
2N5087
MHz
dB
2N5086,2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, T A = 25°C)
FIGURE 2 -
FIGURE 1 - NOISE VOLTAGE
0
7.0
~
w
'"
~
g
5. 0
-- -
3. 0 ~
w
~
o
z
if
2.
RS
~
~
30"A
~
o
IC- 1.OmA
.......
........
--+-l
2. 0 ........
B
100"A
300 A
~O)A
........
1. O~o
O. 7~ - O. 5
......
'" O. 3
..5
100.A
~A
........
0.2
1.0
10
20
50
500 1.0 k
100
200
t. FREQUENCY 1Hz}
2.0 k
5.0 k
10 "A
1
I
10 k
1.0 Hz
RS~-
~ 3.0
1111
o 1.0mA-::'
Bandwidth
7. 0
5. 0
0
IC - 10 "A
::-
NOISE CURRENT
10
1.0 Hz
Bandwidth
10
50
20
100
500
200
1.0 k
2.0 k
5.0 k 10 k
t. FREQUENCY 1Hz)
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, T A
FIGURE 3 -
200 k
~
lOOk
'"
FIGURE 4 -
Bandwidth
500 k
en
=:
1.0 Hz-
~
5Dk
::i
20 k
~
~ 10k
_ 5.0 k
Bandwidth - 1.0 Hz
10k -.......
0.5 dB
~ S.Ck
w
~ 2.0 k
2.0dB ~
1.Ok
500
3.0 dB
g
"
(f]
20
30
50
70
200
100
300
......
10k
500
200
100
10
5.0 dB
10
500 700 10k
IC. COLLECTOR CURRENT I"AI
FIGURE 5 -
~
w
'-'
~
10 Hzto 15 7 kHz~
20
30
50
70
100
200
300
500 7001.0 k
Noise Figure is Defined as:
fen2 + 4KTRS + In2RS2] 1/2
_
NF - 20 1091O
4KTRS
t
SDk
20k
en
0.5 dB
10k
5.0k
In
1.0 dB
2.0k
~ 1.Ok
~
3.0 dB
5.0 dB
WIDEBAND
~ lOOk
~
1.0 dB
2.0 dB
IC. COLLECTOR CURRENT I"A)
1.0M
500 k
z
~
-
w
10dB
~ 2.0k
200
100
500 k
~ lOOk
~ 20k~0.5dB
;P
NARROW BAND, 1.0 KHz
v.i 200 k
~ SDk
"~
= 25°C)
NARROW BAND, 100 Hz
2.0 dB
500
K
T
RS
3.0dB
200
100
10
20
30
50
70
100
200
300
5.0 dB
500 700 1.0 k
Noise Voltage of the Transistor
referred to the input. (Figure 3)
Noise Current of the transistor
referred to the input (Figure 4)
Boltzman's Constant (1.38 x 10- 23 jfOK)
Temperature of the Source Resistance (OK)
Source Resistance (Ohms)
IC. COLLECTOR CURRENT I"AI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-37
•
2N5086,2N5087
TYPICAL STATIC CHARACTERISTICS
•
FIGURE 6 -
DC CURRENT GAIN
400
- -
z
;;: 200
5 b:::: l:::Fa'"'"g 100
~
~
80
60
- --
F""'"
t:>
,...-
,-
TJ'125'C
::.::: ~:;...
-
J
r--- [\
.
t--
MPS3906
::;.-
-
I
0.05 0.07 0.1
0.2
0.3
0.5
0.7
"
I'
~I'
c-,
- - - VCr- LOV
III
0.02 0.03
r-
-55'C
--=
f-
VfE'r
II
0.01
1-
I
+- -
~
J:::=-
40
0.003 0.005
r- r-
- -~
25 C
I
2.0
1.0
3.0
5.0 7.0
10
20
30
50
70
100
IC. COLLECTOR CURRENT ImA)
FIGURE 7 -
COLLECTOR SATURATION REGION
~ L0
tl l
o
~
w
..
to
FIGURE 8 100
l li5,b
MPS3906
O. 8
!\
~
lOrnA
Ic·'.0mA
o
~ O.6
SOmA
Pulse WIdth = 300 ps
;;:
E.
III
0
go.
~8
2
I"-
8
~
0
0.002 0.0050.0-1 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
5.0
IS. SASE CURRENT ImA)
FIGURE 9 -
"ON" VOLTAGES
FIGURE 10 G
TJ' 25'C
1.
0
ffi
!:i
o
~
I-- V~EI"I) @ IC/IS' 10
8
w
g;
O.6
t-- V8EI,n) @VCE • 1.0 V
>
>. O. 4
0.2
0.5
1.0
5.0
40
TEMPERATURE COEFFICIENTS
lLl
JLI
'OV~ t,! VUI~I)
25'C to 125'C
-55°C to 250 C
f----
111
-0. 8
~
f-
~
2.0
35
3D
0
~ -1.6
-
f--- VCElsal)@IC/ 18- 1O
0
0.1
25
f-
I 1111111
I II
O.2
20
II I
r-
;:;
w
15
·Appl,es for lells ~ hFEI2
.§ O. 8
~
o
~
1. 6
e..
>
1. 2
2!:. o. 8
10
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
1.4
~
-+---+--f---t-::;7'f'--::
80
I'"
~ D. 4
>
DutV Cycle" 2.0%
COLLECTOR CHARACTERISTICS
f-
I \100mA
.~
~
TA' 25'C
10
20
50
100
IC. COLLECTOR CURRENT ImA)
-2.
25'C I, 125'C
A"'I
eva for
VSE
4H-t1Tl
0.1
0.2
0.5
.......!1.0
2.0
'-55°C to 25 0 C
5.0
10
IC. COLLECTOR CURRENT ImAi
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
2·38
llJJ
20
50
100
2N5086, 2N5087
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 11 - TURN·ON TIME
FIGURE 12 - TURN-OFF TIME
1000
500
200
100
!
70
50
.,lIi
'"
]: lOa
I'--...
70
50
tr
.........
10
2.0
3.0
tf
30
td @VSE{off) = 0.5 V......... '-..
7.0
5.0
1.0
20
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT (rnA)
50
10
1.0
70 100
fJ
t;
" 300
~
'"b
~
VCE=20~V
-r---.~
""
7. 0
.........
~
E:- 5. 0
i'--"
,#V ~OV
.
200
3.0
-
0
~ ~Joc
2.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT (rnA)
'"u
z
.........
......
Cib
........
""-
~ 3.0
~
;'3
I
Cob
.......... r--
t3 2.0
;;: 100
~
'"
B
i-
I--
70
50
0.5 0.7
2.0
1.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.5 1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
0.2
IC. COLLECTOR CURRENT (rnA)
FIGURE 15 - INPUT IMPEDANCE
10
"I\..r"-
~
5.0
ffi
3.0
...~
2.0
iC
~
200
VCE = 10 Vdc
f = 1.0 kHz
TA -250 C
II
g 7.0
i
MPS3906
hfe"",200
1.0mA
@IC
MPS390~
hte"" 100
@lc=1.0mA
1.0
:1 o. 7
"
"-
..§.
100
70
~
50
1.0
2.0
50
I
5.0
10
20
IC. COLLECTOR CURRENT (rnA)
50
,
10
7.0
5.0
-
3.0
2.0
0.1
100
I
0.2
,/'
I
Vi-'
I
V
l(
i
MPS3905
hfe"" 100
·@IC=1.0mA
,
I
I !
I
1-
0.5
1.0
2.0
S.O
10
Ie. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2·39
i
MPS3906- 200
@lc=1.0mA
...
~
I
2SOC
hf.~
Sl
....
~ ~--T~
ii!
~
.f'
100
60
:=:::>
-
........
...
k'2.0 k' 1.2
....:::>~
Q
.:.
....
>-
200
f. FREQUENCY (MHz)
f. FREQUENCY (MHz)
When a potantially unstabl, device is operated without feedback, th~ is an infinite numb. of combinations of
source and load admittancI associated with any given circuit stability factor (It). Equations hava bee" developed for
determining the optimum source lind load admittance for maximum gain. Figures 7. 12 and 13 provide iI solution to
the tqUations for th, 2N5208.
NOISE FIGURE
FIGURE 15 - SOURCE RESISTANCE EFFECTS
FIGURE 14 - FREQUENCY EFFECTS
7.0
6.0
!
'"rr:
""
6.0
IC' 2.0mA RS - 75 Ohms
!...
5. 0
'":::>
...'";0:
4. 0
;0:
'"
5
z
7.0
YCE~lOyl
./
3. 0
5.0
4.0
.:
z 2. 0
'"z 3.0
C
.
z 2.0
1.0
1.0
40
50
70
100
200
o
300
10
20
FIGURE 16 - CURRENT-GAIN -BANDWIDTH PRODUCT
YCE'IOY
BOO
1.0 k
500
lOll
200
50
RS. SOURCE RESISTANCE (Ohm~
TA-250C
f -1.0MHz
5.0
~
700
--
b
~I
30
10
t;
~ 600
/
FIGURE 17 - CAPACITANCES
~100 0
~ 900
%
V
"- ~
f. FREQUENCY (MHz'
5
~
I
~
o
30
K'\
Yce l• 10ly I
IC '2.0mA
f -100 MHz
~
500
Z
~
~
400
i:l
.i
0
30 1.0
~
...
u
"
z
\
\
\
2.0
3.0
4.0
.....
2. 0
~
1. 0
~
0.5
Cibo
Cabo
Ccb~ .... ~
0.2
O. I
0.1
5.0 6.0 7.0 B.O 9.0 10
IC. COLLECTOR CURRENT (mA)
0.2
0.5
1.0
2.0
REYERSE BIAS (Ydcl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-45
5.0
10
20
30
•
2N5208
FIGURE 18 - DC CURRENT GAIN
3.0
•
ffi
..
2.0
<>
l!;.
1.0
N
TJ'12SoC
VCE "10V
::l
~
z
~
I-
r--
2SoC
0.8
O.B
0.S
-850C
~ 0.4
~ O.3
<.)
............. :\.
.......
<.)
<>
-
0.2
,&:'t1.
o. 1
0.1
0.2
0.3
0.4
0.5
0.7
1.0
2.0
IC. COLLECTOR CURRENT (mAl
3.0
4.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-46
5.0
7.0
10
20
2N5209
2N5210
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
50
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWI"C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mWI"C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
RruC
125
Unit
0c/w
RruA(l)
357
°CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to MPSA18 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
50
-
Vdc
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
V(BR)CBO
50
-
Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
-
50
nAdc
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
50
nAdc
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(lC = 100 pAdc, VCE = 5.0 Vdc)
hFE
2N5209
2N5210
100
200
300
600
(lc = 1.0 mAde, VCE = 5.0 Vdc)
2N5209
2N5210
150
250
-
(lC = 10 mAde, VCE = 5.0 Vdc)(2)
2N5209
2N5210
150
250
-
-
-
Collector-Emitter Saturation Voltage
(lc = 10 mAde, 18 = 1.0 mAde)
VCE(sat)
-
0.7
Vdc
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vdc)
VBE(on)
-
0.85
Vdc
MHz
SMALL-SIGNAL CHARACTERISTICS'
Current-Gain - Bandwidth Product
(lC = 500 pAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 100 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
fr
30
-
Ccb
-
4.0
150
250
600
900
-
hfe
2N5209
2N5210
Noise Figure
(lC = 20 pAdc, VCE = 5.0 Vdc, RS = 22 k ohms,
f = 10 Hz to 15.7 kHz)
2N5209
2N5210
NF
(lC = 20 pAdc, VCE = 5.0 Vdc, RS = 10 k ohms,
f = 1.0 kHz)
2N5209
2N5210
(1) RruA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width = 300 p.s, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-47
pF
-
dB
3.0
2.0
4.0
3.0
•
2N5222
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vde
Collector-Base Voltage
VCBO
20
Vde
Emitter-Base Voltage
VEBO
2.0
Vde
IC
50
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWI"C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mWI"C
TJ, Tstg
-55to +150
°c
Symbol
Max
Unit
RruC
125
°C/W
RruA(l)
357
°CIW
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 ITO-226AA)
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Coliector·Emitter Breakdown Voltage
(lC = 1.0 mAdc, IB = 0)
V(I:lR)CEO
15
Coliector·Base Breakdown Voltage
(lC = 100 ~dc, IE = 0)
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 100 ~dc, IC = 0)
V(BR)EBO
2.0
-
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VBE = 2.0 Vdc, IC = 0)
lEBO
-
100
nAdc
hFE
20
150
Collector-Emitter Saturation Voltage
(lC = 4.0 mAde, IB = 400 ~dc)
VCE(sat)
-
1.0
Vdc
Base-Emitter On Voltage
(lC = 4.0 mAde, IB = 400 ~dc)
VBE(on)
-
1.2
Vdc
fr
450
-
MHz
Ccb
-
1.3
pF
hie
20
300
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 4.0 mAdc, VCE
=
-
10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAdc;VCE = 10 Vdc, I
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, I
=
=
20 MHz)
1.0 MHz)
Small-Signal Current Gain
(lC = 4.0 mAde, VCE = 10 Vdc, 1= 1.0 kHz)
(1) RruA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width = 300 ",", Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-48
2N5222
COMMON·BASE Y PARAMETERS versus FREQUENCY
(VCB ~ 10 Vde, IC ~ 4.0 mAde, T A ~ 25°C)
--
80
70
E!
60
'"uz
50
.s
'"
r--.-...
~
"'"
·10
b"
'~
40
c
I-
~
FIGURE 2 - POLAR FORM
9ib
-bib
l-
I-
•
Yib, INPUT ADMITTANCE
FIGURE 1 - RECTANGULAR FORM
30
-",,-
·20
!i
E!
..........
.............
'" "'-
;;; 20
.;
>=
10
o
200
100
300
400
I, FREUUENCY (MHz)
.s
500
e
f--l000 MHz
·30
........
700
·50
"\
·60
1000
700
--
"'" r---....
·40
30
20
10
1
400
2 0 -100
I--
I
40
60
50
80
70
9ib (mmhos)
Yfb, FORWARD TRANSFER ADMITTANCE
!i
E!
70
.s
60
u
'"z
50
l-
'"
40
c
30
I-
"'"'"
'"
20
z
10
---
60
bIb
r-
r-.....
I
·91b
~
~
·10
300
400
600""'-..,.
700'"
40
~
~
30
'" "
500
1000 MHz
20
i'200
400
100
.s
-30
100
-t-... f'-.....
C
E!
"
~ ·20
~
50
I'..
I-
'"~
--... ................
I'"
~
~
FIGURE 4 - POLAR FORM
FIGURE 3 - RECTANGULAR FORM
700
10
70
1000
60
50
40
30
I. FREUUENCY (MHz)
20
10
·10
·20
-30
1.2
1.6
2.0
9lb (mmhos)
COMMON·BASE Y PARAMETERS versus FREQUENCY
(VCB ~ 10 Vde, IC ~ 4.0 mAde, T A ~ 25°C)
Yrb, REVERSE TRANSFER ADMITTANCE
FIGURE 5 - RECTANGULAR FORM
!i
E!
5.0
'"
4.0
FIGURE 6 - POLAR FORM
.s
u
'"
100
·1.0
200
-2.0
400
'"
1=
"'"'"
c
,/
~
z
~
""-::brb
2.0
V
I-
'"
~
'"'"
1.0
$
0
~
!i
E!
3.0
'"
100
.s
f--
4. -3.0
700
~ .......
V
200
-4.0
I-'"
-grb
400
500
300
I, FREUUENCY (MHz)
700
1000 MHz
-5.0
1000
-2.0
-1.6
-1.2
-0.8
-0.4
9rb (mmhos)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-49
0.4
0.8
2N5222
Yob. OUTPUT ADMITTANCE
•
FIGURE 7 - RECTANGULAR FORM
10
1
.5
w
<.>
9.0
V
8.0
v
II
10
I
« 6.0
~
"...«
:::>
:=:::>
"~
2.0
1.0
700
/
5.0
b b
4.0
3.0
1000 MHz
B.O
7.0
z
I:::
FIGURE 8 - POLAR FORM
- --
100
V
+400
,,/
I
200
~
2.0
~V
W
200
300
400
100
~
500
o
700
o
1000
2.0
4.0
6.0
gob Immhos)
f. FREQUENCY (MHz,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-50
8.0
10
2N5223
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vde
Collector-Base Voltage
VCBO
25
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
100
mAde
mW
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25"<:
Po
625
5.0
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.5
12.0
mWrC
TJ, Tstg
-55to+150
°c
Symbol
Max
Unit
R/lJC
125
°CIW
R/lJA(I)
357
°CIW
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
,/~~"-
Watt
23
THERMAL CHARACTERISTICS
1 Emitter
AMPLIFIER TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPNSIUCON
(1) R/IJA is measured with the device soldered into a tvpieal printed circuit board.
Refer to 2N3803 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 100 IlAde, IE = 0)
V(BR)CBO
25
Emitter-Base Breakdown Voltage
(IE = 100 IlAde, IC = 0)
V(BR)EBO
3.0
-
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
500
nAde
hFE
50
800
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VeE (sat)
-
0.7
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
1.2
Vde
f,-
150
-
MHz
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Ceb
-
4.0
pF
Small-Signal Current Gain
(lC = 2.0 mAde, VeE = 10 Vde. f = 1.0 kHz)
hfe
50
1600
-
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 20 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-51
•
2N5226
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
500
mAdc
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
PD
1.5
12.0
Watt
mWrC
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
RBJC
125
°CIW
RBJA(1)
357
°CIW
Operating and Storage Junction
Temperature Range
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
3 Collector
~()
1 Emitter
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PNP SILICON
(1) RBJA IS measured wIth the devIce soldered Into a typIcal printed circuIt board.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
25
Collector-Base Breakdown Voltage
(lC = 100 /lAdc, IE = 0)
V(BR)CBO
25
Emitter-Base Breakdown Voltage
(IE = 100 /lAdc, Ie = 0)
V(BR)EBO
4.0
-
Collector Cutoff Current
(VCB = 15 Vdc, IC = 0)
ICBO
-
300
nAde
Em itter Cutoff Cu rrent
(VBE = 4.0 Vdc, IC = 0)
lEBO
-
500
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vdc
Vde
Vde
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 mAde, VCE
(lC = 50 mAde, VCE
=
=
hFE
25
30
10 Vde)
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VCE(sat )
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 10 mAde)
VBE(sat)
-
fy
-
-
600
0.8
Vde
1.0
Vde
50
-
MHz
Cct!
-
20
pF
hfe
30
1800
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAdc, VCE = 10 Vde, f = 20 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
1.0 MHz)
Small-Signal Current Gain
(lC = 50 mAde, VCE = 10 Vde, f
=
1.0 kHz)
(2) Pulse Test: Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-52
2NS227
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
mW
mWf'C
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
625
5.0
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
1.5
12.0
Watt
mWf'C
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
3 Collector
.:--©
1 Emitter
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RruC
83.3
°CIW
RruA(1)
200
°CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
•
CASE 29-04. STYLE 1
TO-92 (TO-226AAI
AMPLIFIER TRANSISTOR
PNP SILICON
(1) RruA is measured with the device soldered into a typical printed circuit board.
Refer to 2N3905 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C
unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
30
-
Vdc
Collector-Base Breakdown Voltage
(lc = 100 !!Ade, IE = 0)
V(BR)CBO
30
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 !!Ade, IC = 0)
V(BR)EBO
3.0
-
Vdc
100
nAde
500
nAde
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 2.0 Vde, IC = 0)
lEBO
-
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !!Ade, VCE = 10 Vde)
(lC = 2.0 mAde, VCE = 10 Vde)
hFE
-
30
50
700
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, 18 = 1.0 mAde)
VBE(sat)
-
1.0
Vde
fr
100
-
MHz
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, 1= 1.0 MHz)
Ceb
-
5.0
pF
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vde, I
hIe
50
1500
-
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, I = 20 MHz)
=
1.0 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-53
•
2N5400
2N5401
MAXIMUM RATINGS
Symbol
2N5400
2N5401
Unit
Collector-Emitter Voltage
VCEO
120
150
Vde
Collector-Base Voltage
VCBO
130
160
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12.0
mWrC
-55to +150
°c
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
121 ":~'''."'
mW
Watt
1 Emitter
3
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R9JC
83.3
°CIW
Thermal Resistance, Junction to Ambient
R9JA
200
°CIW
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
120
150
-
130
160
-
5.0
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
liC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
liC = 100 pAde, IE = 0)
V(BR)EBO
ICBO
0)
0)
0, TA
0, TA
=
=
Vde
V(BR)CBO
2N5400
2N5401
Emitter-Base Breakdown Voltage
liE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
Vde
V(BR)CEO
2N5400
2N5401
100°C)
100°C)
2N5400
2N5401
2N5400
2N5401
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
-
-
100
50
100
50
-
50
Vde
nAde
pAde
nAde
ON CHARACTERISTICS(I)
DC Current Gain
liC = 1.0 mAde, VCE
hFE
= 5.0 Vde)
2N5400
2N5401
30
50
liC
=
= 5.0 Vde)
2N5400
2N5401
40
60
liC
= 50 mAde, VCE = 5.0 Vde)
2N5400
2N5401
40
50
10 mAde, VCE
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
lic = 10 mAde, la = 1.0 mAde)
(lC = 50 mAde, la = 5.0 mAde)
VaE(sat)
-
-
-
-
180
240
-
Vde
0.20
0.5
Vde
1.0
1.0
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - aandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 Mhz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f
for
2N5400
2N5401
Cobo
= 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-54
MHz
100
100
400
300
-
6.0
pF
2N5400,2N5401
ELECTRICAL CHARACTERISTICS (continued) (TA
Characteristic
= 25°C unless otherwise noted)
Symbol
Small-Signal Current Gain
(lc = 1.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
= 300 p.s,
Max
30
40
200
200
-
8.0
Unit
NF
Duty Cycle
•
-
2N5400
2N5401
Noise Figure
(IC = 250 pAdc, VCE = 5.0 Vdc,
RS = 1.0 kohm, 1= 10 Hz to 15.7 kHz)
(1) Pulse Test: Pulse Width
Min
hIe
dB
= 2.0%.
FIGURE 1 - DC CURRENT GAIN
I-.-~I"""
20~
0.1
0.3
0.2
0.5
3.0
2.0
5.0
IC, COLLECTOR CURRENT (rnA)
1.0
10
20
30
50
100
FIGURE 2 - COLLECTOR SATURATION REGION
~
0
~
1.0
II
0.9
'"<
:i 0.7
\
\
0
>
a; 0.6
w
IC= 1.0 rnA
~ 0.5
"i 0.4
a;
--'
0.2
'"W'
0.1
0
\
100 rnA
30 rnA
~
~
\
0
>- 0.3
'"'
\
\
\
1\
l10mA
:E
~
\
\
\
w 0.8
1\
\
I"'"-
t-t-
0.01
0.02
0.05
0.2
0.5
lB. BASE CURRENT (rnA)
0.1
1.0
5.0
2.0
FIGURE 3 - COLLECTOR CUT-OFF REGION
103
I- VCE" 30 V
«
I
102
.5
IC = ICES
>-
a:i
a;
/
II
10 1
TJ = 125 0 C
0:
=>
'"'a;
100
9
750 C
:::10- 1
8
~REj'ERSE
!210·2
FOR~ARO
25 0 C
10·3
0.3
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
VBE. BASE·EMITIER VOLTAGE (VOLTS)
0.6
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-55
l"-
t--
>'"'
0.005
"
-
1"'-.
1'0.
0.7
10
20
so
2N5400, 2N5401
FIGURE 4 - "ON" VOLTAGES
1.0
•
TJ=25 0C
11111
0.9
II III
0.8
c: 0.6
2!
~
I
IIIIIII
~0.7
0.5
~O.4
-
I
---
VSE(SAT)@ ICIIS =10
-
FIGURE 5 - TEMPERATURE COEFFICIENTS
2.5
a
i-'
TJ = -550C10 135 0C
2.0
E!._>e
1.5
§ 1.0
~
w
0.5
fl
BVC FOR VCE(SAT)
.........
Bva FOR VaE(SAT)
10-
w
~-0.5
o
S-I.0
~
il'i -1.5
I.,:>-2.0
~.0.3
-
0.2
-
VCE(SAT)@ Ic/lS =10
0.1
II IIII
o
0.1
0.2 0.3 0.5
111111
-2.5
1.0
2.0 3.0 5.0
10
20 30
IC. COLLECTOR CURRENT(mA)
50
0.1
100
0.2 0.3
FIGURE 6 - SWITCHING TIME TEST CIRCUIT
0.5
1.0
2.0 3.0 5.0
10
IC. COLLECTOR CURRENT (mA)
20 30
10.2 V
LU
3.0 k
H
t
u::
RC
100
1--10#.--1
INPUT PULSE
70
50
VCC
30V
8.8 V
VOUI
I-+--JIII,II,_H
0.25 #F
30
..e
w
'"z
Cibo
...... r-... .....
1
V.lues Shown ora 10' IC
@ 10
2.0
1.0
0.2
':'
0.3
mA
FIGURE 8 - TURN·ON TIME
1000
1,@VCC'120V-
I'
I'<"
~
i'"
~
w
'!! 100
700
500
1,@VCC=30V
"-
"I i'1-1
Iclla -10
~ 200
;::
70
50
Id@VaE (OFF) = 1.0 V
20
1n11'20V
1.0
2.0 3.0 5.0
10
20 30
IC. COLLECTOR CURRENT (mA)
10
20
~II~ VCC = 1210 V
"
I
50
100
70
50
.....
100
30
20
0.2 0.3
200
0.5
1.0
"
1\
2.0 3.0 5.0
10
20 30
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-56
'"
1.@VCC·120V
~.
30
10
0.2 0.3 0.5
,
T)'~5JCl'
]300 l - f- II@VCC= 30V
I-
"
0.5 0.7 1.0
2.0 3.0
5.0 7.0
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 9 - TURN·OFF TIME
2000
1000
700 i=!c/la = 10
500 r-TJ=250C
200
Cobo~
t$
3.0
1,.11"10..
Duty Cycle' 1.0%
300
TJ=25 0C
...
--
.....
20
~ 10
~ 7.0
~ 5.0
Vln
]
100
FIGURE 7 - CAPACITANCES
100
Vaa
50
50
100
200
2N5550
2N5551
MAXIMUM RATINGS
Symbol
2N5550
2N5551
Unit
Collector-Emitter Voltage
Rating
VCEO
140
160
Vdc
Collector-Base Voltage
VCBO
160
180
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
600
mAde
PD
625
5.0
mW
mWFC
PD
1.5
12
Watt
mWFC
Collector Current -
Continuous
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Total Device Dissipation @ TC
Derate above 25·C
=
25·C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
·C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
•
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
Max
Unit
R9JC
125
·CIW
R9JA(1)
357
·CIW
AMPLIFIER TRANSISTOR
NPN SILICON
(1) R9JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
140
160
V(BR)CBO
2N5550
2N5551
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE =
(VCB = 120 Vdc, IE =
(VCB = 100 Vdc, IE =
(VCB = 120 Vdc, IE =
160
180
V(BR)EBO
ICBO
0)
0)
0, TA
0, TA
=
=
Vdc
V(BR)CEO
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
100·C)
100·C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
6.0
-
-
-
-
100
50
100
50
-
50
Vdc
Vdc
nAdc
pAdc
nAdc
ON CHARACTERISTlCS(2)
DC Current Gain
(lC = 1.0 mAde, VCE
hFE
=
5.0 Vdc)
2N5550
2N5551
60
80
-
(lC
=
=
5.0 Vde)
2N5550
2N5551
60
80
250
250
(lc
= 50 mAde, VCE =
5.0 Vde)
2N5550
2N5551
20
30
-
10 mAde, VCE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC
=
50 mAde, IB
=
VeE(sat)
5.0 mAde)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAdcl
(lc
Both Types
-
2N5550
2N5551
-
VBE(satl
Both Types
= 50 mAde, IB = 5.0 mAde)
2N5550
2N5551
(2) Pulse Test: Pulse Width = 300 p.s, Duty Cycle
=
2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-57
-
-
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
I
Characteristic
•
Symbol
Min
Max
Unit
t,-
100
300
MHz
-
6.0
pF
-
30
20
50
200
-
10
8.0
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(Ie = 10 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
Input Capacitance
(VBE = 0.5 Vdc,IC
Cobo
= 1.0 MHz)
= 0, f =
Cibo
1.0 MHz)
2N5550
2N5551
Small-Signal Current Gain
(lC = 1.0 mAde, VeE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(Ie = 250 IoIAdc, VeE = 5.0 Vdc, RS
f = 10 Hz to 15.7 kHz)
hfe
NF
=
2N5550
2N5551
1.0 kohm,
pF
dB
FIGURE 1 - DC CURRENT GAIN
500
300
-
-TJ= 125DC
200
- 2 5DC
z
«
....
'"z
==~55DC
W
II:
II:
50
CI
30
::>
to
to
ul
~
-....
i"oo
100
Vce= 1.0 V
VCP 5.0 V
I"':"'~
,....: ~ r-,-:
I:...... :...... ;:-
20
I"'
10
1.0
5.0
0.1
0.2
0.3
0.5
0.1
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)
10
1.0
20
30
50
10
100
FIGURE 2 - COLLECTOR SATURATION REGION
_
!:lo
1.0
\
0.9
\
2:
w 0.8
~
0.6
!:
0.5
~
t;
\ 10mA
IC"1.0 mA
:\
0.3
.... 0.2
~
o. 1
>
0
0.005
l00mA
30mA
\
0.4
~
8
\
0.7
o
:
\
f\..
i'-- .....
0.01
0.02
,"0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-58
~
r-- I5.0
10
20
50
2N5550, 2N5551
FIGURE 3 - COLLECTOR CUT·OFF REGION
10 1
«
.:;
I-
Z
~
lO- 1
•
f::::= \==VCE = 30 V
/
10 0
e-- I-
TJ = 125 DC
__ IC = ICES
co
:::>
'-'
~to- 2
75DC
~
~ 10-3 ~
t=: REVERSE::;:;::± ~:::)OIRWARD
'-'
U
25DC
- 10-4
10-5
0.4
0.3
0.2
0.1
0.1
0.2
0.3
0.4
0.5
0.6
VSE. SASE·EMITIER VOLTAGE (VOLTS)
FIGURE 5 - TEMPERATURE COEFFICIENTS
FIGURE 4 - "ON" VOL TAGES
1.0
l - +- fJ
f---
o 0.6
2:
w
~o_
~ 2~D~
I II
0.8
s
2.5
-
JSJ(J"@ICIIS= 10
U
2.0
,g
1.5
3;
t l_~~oc \DI+1J5b~
TIITII-I
I-
i:'i
1.0
~
0.5
I
U
I-f-
I r 1111
[.I
[.1.[ [
BVC for VCE(..,)
8
w
co
0.4
:::>
I-
«
>
>.
~
O. 2
BVS for VSE(sat)
"w
·1.5
~
-2.0
tt-r
I-
VCE(.." @Ic/lS = 10
o
0.1
·0.5
-1.0
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
20 30
50
-2.5
0.1
100
II III
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
IC. COLLECTOR CURRENT (mA)
IC. COLLECTOR CURRENT (mA)
FIGURE 7 - CAPACITANCES
FIGURE 6 - SWITCHING TIME TEST CIRCUIT
10 0
8.8 V
r-JL
0
~
100
Ir. If" 10 n.
Duty Cycle = 1.0%
~
RC
20
'-'
!--,o,..-I
Inpul Pulse
TJ = 25 DC ~
0
0
VSS
10.2 V
R8
0.25#F
?-11~+--'I,,,,,,,_--jH
I
z
~
I0
5
7. O
5.0
U
~
Vout
5.1 k
100
t-- tClba
t--
3. 0
Cabo IfiOO;
2. 0
Values Shown are for le@ 10 rnA
1.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-59
10
20
2N5550,2N5551
FIGURE 9 - TURN·OFF TIME
FIGURE 8 - TURN-QN TIME
1000
•
=
5000
leliB'10 .
TJ=250e'tr@,vee= 120 V
-
...
500
2000
300
Y
200
I,@ vef i131~ V
2"
,.
oJ
50
30
If@VCC=3OV
]:
j
I-"
,.
w
500
;::
~.
Id @VEB(off) = 1.0 V
Vee
......
120 V
300
~
Is@! Vee = 120 V
II
I
2.0 3.0
5.0
10
20 30
,
r-
100
1.0
'"
200
20
10
0.2 0.3 0.5
>
1000
D-.
;;; 100
;::
lCliB=lo __
TJ=250 C - -
Ij@Vee=I20V
3000
50
100
50
0.2 0.3 0.5
200
Ie. COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0
10
20 30
Ie, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-60
50
100
200
2N5771
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
Collector Current -
Continuous
IC
50
mA
Total Device Dissipation @ TA = 25·C
Derate above 25·C
PD
350
2.8
Watts
mWI'C
Total Device Dissipation @ TC = 25·C
Derate above 25·C
PD
1.0
8.0
Watt
mWI'C
TJ, Tstg
-55 to +150
·C
TL
260
·C
Operating and Storage Junction
Temperature Range
Lead Temperature
3 Collector
~().
1 Emitter
SWITCHING TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Min
= 3.0 mA)(l)
= 100 pAl
V(BRICEO
15
V(BR)CES
15
100 pAl
V(BR)CBO
15
-
V(BR)EBO
4.5
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC
Collector-Emitter Breakdown Voltage
(lC
Collector-Base Breakdown Voltage
(lC
=
(IE = 100 pAl
= 8.0 Vdc)
= 8.0 Vdc)
= 8.0 Vdc, TA = 125·C)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB
Collector Cutoff Current
(VCE
(VCE
Emitter Cutoff Current
(VBE
ICBO
ICES
= 4.5 Vdc)
lEBO
-
Vdc
Vdc
Vdc
Vdc
10
nA
10
5.0
nA
1.0
pA
-
-
pA
ON CHARACTERISTICS
DC Current Gain
(lC
(lc
(lc
(lc
Collector-Emitter Saturation Voltage(l)
Base-Emitter Saturation Voltage(l)
(lC
(lC
(lc
(IC
(lc
(lC
= 1.0 mA, VCE = 0.5 Vdc)(l)
= 10 mA, VCE = 0.3 Vdc)(l)
= 50 mA, VCE = 1.0 Vdc)(l)
= 10 mA, VCE = 0.3 Vdc, TA =
= 1.0 mA, IB = 0.1 mAl
= 10 mA, IB = 1.0 mAl
= 50 mA, IB = 5.0 mAl
= 1.0 mA, IB = 0.1 mAl
= 10 mA, IB = 1.0 mAl
= 50 mA, IB = 5.0 mAl
hFE
-55·C)
VCE(sat)
VBE(sat)
35
50
40
20
-
120
-
0.15
0.18
0.6
Vdc
Vdc
-
0.8
0.95
1.5
-
0.75
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 5.0 Vdc, f = 140 kHz)
Ccb
-
3.0
pF
Emitter-Base Capacitance
(VBE = 0.5 Vdc, f = 140 kHz)
Ceb
-
3.5
pF
hfe
8.5
-
-
20
ns'
15
ns
20
ns
Small-Signal Current Gain
(lC = 10 mA, VCE = 10 Vdc, f
=
100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(lC = 10 mA, IBl = IB2 = 10 mAl
Turn-On Time
(lC = 10 mA, IB
Turn-Off Time
(lC = 10 mA, IBl
..
(1) Pulse CondItIOns:
=
ton
-
toff
-
ts
1.0 mAl
=
IB2
=
1.0 mAl
Pulse Length
= 300
/LS, Duty Cycle = 1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-61
•
2N6426
2N6427
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base VollSge
VEBO
12
Vdc
IC
500
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"<:
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55 to +150
"C
Rating
Collector Current -
Continuous
Operating and storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Collector 3
.,f
3
Emitter 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
R8JC
83.3
"CIW
R8JA(1)
200
"CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
DARLINGTON TRANSISTOR .
NPN SILICON
(1) R8JA is measured with the device soldered into a typical pnnted CirCUit board.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 100 /'Adc, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(Ie = 10 /'Adc, IC = 0)
V(BR)EBO
12
Characteristic
Typ
Max
-
-
Unh
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICEO
Collector Cutoff Current
('iICB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 0)
lEBO
-
Vdc
Vde
Vdc
1.0
/'Adc
50
nAde
50
nAde
ON CHARACTERISTICS
DC Current Gain(2)
(lC ;= 10 mAde, VCE
liFE
= 5.0 Vde)
2N6426
2N6427
20,000
10,000
(lC
=
= 5.0 Vde)
2N6426
2N6427
30,000
20,000
(lC
= 500 mAde, VCE = 5.0 Vde)
2N6426
2N6427
20,000
14,000
100 mAde, VCE
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 0.5 mAdc)
(lC = 500 mAde, IB = 0.5 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 600 mAde, IB = 0.5 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 50 mAde, VCE = 5.0 Vde)
VBE(on)
-
-
200,000
100,000
-
300,000
200,000
200,000
140,000
Vde
0.71
0.9
1.2
1.6
1.52
2.0
Vde
1.24
1.75
Vde
5.4
7.0
pF
10
15
pF
SMALL-5IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VBE = 1.0 Vdc,IC = 0, f = 1.0 MHz)
Cibo
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-62
2N6426, 2N6427
ELECTRICAL CHARACTERISTICS (continued) (TA =
25°C unless otherwise noted)
Symbol
Characteristic
Input Impedance
(lC = 10 mAdc, VCE
= 5.0 Vdc, f =
Small-Signal Current Gain
(lC = 10 mAdc, VCE = 5.0 Vdc, f
Current Gain - High Frequency
(lC = 10 mAdc, VCE = 5.0 Vdc, f
Output Admittance
(lC = 10 mAdc, VCE
=
=
= 5.0 Vdc, f =
Noise Figure
(lC = 1.0 mAdc, VCE = 5.0 Vdc, RS
f = 10 kHz to 15.7 kHz)
Min
Typ
Max
100
50
-
2000
1000
20,000
10,000
-
hie
1.0 kHz)
2N6426
2N6427
1.0 kHz)
2N6426
2N6427
hfe
Ihfel
2N6426
2N6427
100 MHz)
hoe
1.0 kHz)
NF
= 100 kG,
Unit
kG
-
-
-
1.5
1.3
2.4
2.4
-
-
1000
"mhos
3.0
10
dB
(2) Pulse Test: Pulse Width .. 300 "", Duty Cycle'" 2.0%.
FIGURE I - TRANSISTOR NOISE MODEL
1-----------1
I
I
Ideal
Transistor
IL ___________ ..JI
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
FIGURE 2 -NOISE VOLTAGE
FIGURE 3 - NOISE CURRENT
2.0
500
III
III
BANDWIDTH = 1.0 Hz
BAN DWIDTH = 1.0 Hz
RS~O
200 " -
~
w
to
~
g
w
'"C
z
if
100
1.0
.......
!
10.A
or
50
~
loo.A
'"""-
0
20
50
100 200
11111
0.2
IIII
ll!
Ic=1.0mA
V/
1/
loo.A
oz o.1 - 1 .~ 0.07
1O.A
0.0 5
0.03
0.02
10
5. 0
10
IC·1.~,~A
'-'
Ill"'-
10
O. 7
o. 5
....
~ o. 3
500 1.0k 2.0k 5.0k 10k 20k
50k lOOk
III
1111
20
50
100 200
500 1.0k 2.0k 5.0k 10k 20k
f, FREQUENCY (Hz)
f. FREQUENCY (Hz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-63
SOk lOOk
•
2N6426, 2N6427
FIGURE 5 - WIDEBAND NOISE FIGURE
FIGURE 4 - TOTAL WIDEBAND NOISE VOLTAGE
200
•
JJJ
14
~
~
'">
Ol--Ie
~
(5
0
12
I/v.
100
;;;
z
z
'"
Or- I--
ffi
Q
4:
l-
....
0
1.0
.~
I,
~
6.0
z
~.
z
"-
i-""
4.0 I-IC =i'O ~AI
I
I
I
2.0
ii
50
100
5.0
10
20
RS, SOURCE RESISTANCE (knl
2.0
100.A
(5
V
LOrnA
~
!;
=> 8.0
...- b:'
\OO~A
1I
0
3:
1O.A
"\.
'"
u:
w
500 1000
200
BlNI
10
w
1,/
D~I bVH = 10 ~z I~ ,~) k~;
'\
'\
1'\
'"'"
10"A
I I
I I III
'\
111111
BANDWIDTH = 10 Hz TO 15.7 kHz
1.0
I
I
I
5.0
2.0
./'
""""
..........
~
10
20
50
100
200
RS, SOURCE RESISTANCE IkSlI
500 1000
SMALL·SIGNAL CHARACTERISTICS
FIGURE 7 - HIGH FREQUENCY CURRENT GAIN
FIGURE 6 - CAPACITANCE
20
4.0
IIII
liJI:
:::- r--
l5 C
;;;:
0
10
.
~
7.0
z
4:
....
U
'"....
2.0
~
1.0
O.B
~
~
w
<>
VCE= 5.0 V
f= 100 MHz
TJ=25 0 C
z
Cibo f -
5.0
.......
§
~
~
Cobo
r--.
<;;
j
'"
ill
d
3.0
V
't--.
,
Y
0.6
0.4
,
0;
~
0.2
0.5
2.0
0.1
0.04
02
0.4
1.0
2.0
4.0
VR, REVERSE VOLTAGE (VOLTSI
10
20
40
..... r--..,
l..-I--
t-"
~
~ 2. 5
C'250C
~ SOk
w
'"
~
g
'"
30 k
w
'" 20 k
...'"
::>
-55°C
5.0 k
3.0k
2.0 k
5.0
VCE = 5.0 V
I-t1'
I'
II
7.0
10
I-f-
so 70 100
20
30
IC, COLLECTOR CURRENT (mAl
200
300
1.5
'"
~
...'"
1.0
~
SOD
2.0
~
~
10k
~ 1.0k
..c
0.5
10
20
50
100
IC, COLLECTOR CURRENT ImAI
3.0
TJ=1250C
lOOk
70 k
g
2.0
200
500
FIGURE 9 - COLLECTOR SATURATION REGION
FIGURE 8 - DC CURRENT GAIN
2IIOk
'"!i:
1.0
>
I I
I
1111 I
II
I I
I
1111 I
11111
:e~ 1~~A 5~~A
II
~~o~J
TJ=250C
Iorlr
~
o. 5·
0.1
0.2
0.5 1.0
2.0
5.0 10 20
IS, SASE CURRENT !.AI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-64
m TTTT
I
1
50
100 200
500 1000
2N6426, 2N6427
FIGURE 10 - "ON" VOLTAGES
FIGURE 11 - TEMPERATURE COEFFICIENTS
-1.0
1.6
" II
TJ=250C
1.4
~0
II
m
~
w
"'
:;
V
~SIE) 1'1@ICIIS= 1000
1.2
~i--"
1.0
>
>O.S
I
- -
I
200
20
30
50 70 100
IC. COLLECTOR CURRENT (rnA)
10
IIII
0
VCE("t) @ICIIS = lOOO
5.0 7.0
....... ~
LJ.J.t--l
I
,.,/
250C to 1250C
11J..l-l0
-550C to 250C
500
I
I III
-6. 0
300
-
.w.!--I
_.8VB for VBE
....-
0.6
~
~-
-550C '0 250C
IIII
IIII
0
.
0
VSE(on)@VCE= 5.0 V
«
2~0~ ~~ 1250J
'R INC for VCE(s,,)
0
..........-: ~ I--
ii --rJ.,.....t-- 1-1-
"APPLIES FOR Icl'S" hFE/3.0
5.0
7.0
10
50 70 100
20
30
IC. COLLECTOR CURRENT (rnA)
200
300
500
FIGURE 12 - THERMAL RESPONSE
1.0
0.7
0.5 -0-0.5
:::::c- 0.2
""0
i
~
~ 0.3
~ ~ 0.2 ...-.;:
....
... ~
ffi ~
in,..
Or;- 0.05
I-
---
P~I~GLE PULse
O. 1
SINGLE PULSE
~ ~ 0.01
~ j ::::
---
0.02
Z8Jc(t) = r(t). R8JC
Z8JA(t) = r(l) • R8JA
II II
.11
0.0 1
0.1
0.2
0.5
1.0
2.0
5.0
lO
50
20
TJ(pk) - TC = P(pk) Z8JC(t)
TJ(pk) - TA' P(pk) Z9JA(t)
100
200
500
I
1.0 k
I
II
2.0 k
5.0k
10k
'.TIME (m,)
FIGURE 13 - ACTIVE REGION SAFE OPERATING AREA
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
1.0 k
FIgure A
700
1.0m~~
500
;;: 300
..s...
~
a:
:::>
'"a:
0
~
0
'"~
-
TA=250C
200
-'
" .....
TC = 25°C ~OO"'
30
-
,.....
- CURRENT LIMIT
- THERMAL LIMIT
- - - SECOND BREAKDOWN LIMIT
-
20 ' lO
0.4
I II
0.6
r-'
Pp
....
'.
--,
20
'I
I
.......
)
I
t--
I
I
I
1 _1/,---1
II II
1.0
2.0
4.0
6.0
10
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
Pp
~ -\
I'~'O'
100
70
50
1--,p-1
-\
Duty Cycle = t1 f "" ~
'p
40
Peak Pulse Power == Pp
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-65
•
•
2N6428,A
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
200
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25°C
Po
1.5
12
mWrC
TJ, Tstg
-55to +150
°c
Symbol
Max
Unit
Thermal Resistance. Junction to Case
R6JC
83.3
°CIW
Thermal Resistance, Junction to Ambient
ROJA
200
"CIW
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
.:~
Watts
1 Emitter
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
ELECTRICAL CHARACTERISTICS (TA
=
NPNSILICON
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(!C = 1.0 mAde, IB = 0)
V(BR)CEO
50
-
Vde
Collector-Base Breakdown Voltage
(lc = 0.1 mAde, IE = 0)
V(BR)CBO
60
-
Vdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 Vde)
ICEO
-
0.025
pA
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
0.01
/LA
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
0.Q1
pA
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC
(VCE = 5.0 Vde, IC
(VCE = 5.0 Vde,lc
(VCE = 5.0 Vde, IC
-
hFE
= 0.01 mAde)
= 0.1 mAde)
= 1.0 mAde)
= 10 mAde)
250
250
250
250
650
-
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 0.5 mAde)
(lc = 100 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vde)
VBE(on)
0.56
0.66
Vde
tr
100
700
MHz
Cabo
-
3.0
pF
Cibo
-
8.0
pF
Vde
-
0.2
0.6
SMAU-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 1.0 mAde, VCE = 5.0 V, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
=
1.0 MHz)
0, f
=
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-66
2N6428,A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
hie
3.0
30
kG
Voltage Feedback Ratio
(Ie = 1.0 mAdc, VCE = 5.0 Vde, f = 1.0 kHz)
h re
2.0
20
X 10-4
Small-Signal Current Gain
(lc = 1.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
hie
200
800
Output Admittance
(lC = 1.0 mAdc, VCE = 5.0 Vdc, 1= 1.0 kHz)
hoe
5.0
50
NF
VT
Max (1)
NF
VT
Max (2)
NF
VT
Max (3)
Unit
3.0 118.1
16.2
2.0
6.0 15700
4.0 4600
3.51 4.3
3.0
4.1
dB 1 nV
dB
nV
Characteristic
Input Impedance
(lC = 1.0 mAdc, VCE = 5.0 Vdc, I
=
1.0 kHz)
",mhos
NOISE FIGUREITOTAL NOISE VOLTAGE CHARACTERISTICS
Noise FigureNoltage
(VCE = 5.0 V, IC = 0.1 mA, TA = 25°C)
2N6428
2N6428A
(1) RS = 10 kG, BW = 1.0 Hz, f = 100 Hz
(2) RS = 50 kG, BW = 15.7 kHz, f = 10 Hz--10 kHz
(3) RS = 500 G, BW = 1.0 Hz, f = 10 Hz
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-67
II
MAXIMUM RATINGS
Symbol
Rating
•
2N6515
2N6516
2N6519
2N6517
2N6520
Unit
Collector-Emitter Voltage
VCEO
250
300
350
Vde
Collector-Base Voltage
VCBO
250
300
350
Vde
Emitter-Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO
Vde
6.0
5.0
Base Current
Collector Current -
NPN
2N6515
thru 2N6517
PNP
2N6519
2N6520
IB
250
mAde
IC
500
mAde
Po
0.625
5.0
Watt
mWrC
TJ, Tstg
-55to+150
"c
TL
260
OC
Continuous
Total Device Dissipation
@TA= 25"C
Derate above 25"C
Operating and Storage Junction
Temperature Range
Lead Temperature
;;.1/16" from case for 10 seconds
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
"CIW
Thermal Resistance, Junction to Ambient
ROJA
200
"CIW
Characteristic
I
ELECTRICAL CHARACTERISTICS
HIGH VOLTAGE
TRANSISTORS
(TA = 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
250
300
350
-
250
300
350
-
6.0
5.0
-
-
50
50
50
-
50
50
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Vde
V(BR)CEO
2N6515
2N6516,2N6519
2N6517, 2N6520
Vde
V(BR)CBO
2N6515
2N6516,2N6519
2N6517,2N6520
V(BR)EBO
2N6515, 2N6516, 2N6517
2N6519,2N6520
Collector Cutoff Current
(VCB = 150 Vde, IE = 0)
(VCB = 200 Vde, IE = 0)
(VCB = 250 Vde, IE = 0)
2N6515
2N6516, 2N6519
2N6517, 2N6520
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
(VEB = 4.0 Vde, IC = 0)
2N6515, 2N6516, 2N6517
2N6519, 2N6520
ICBO
lEBO
-
Vde
nAde
nAdc
ON CHARACTERISTICS!I)
DC Current Gain
(lC = 1.0 mAde, VCE
hFE
=
10 Vde)
2N6515
2N6516, 2N6519
2N6517, 2N6520
35
30
20
-
(lC
=
=
10 Vde)
2N6515
2N6516,2N6519
2N6517, 2N6520
50
45
30
-
(lC
= 30 mAde, VCE =
10 Vde)
2N6515
2N6516,2N6519
2N6517,2N6520
50
45
30
300
270
200
(lC
= 50
10 Vde)
2N6515
2N6516,2N6519
2N6517, 2N6520
45
40
20
220
200
200
(lC
=
2N6515
2N6516, 2N6519
2N6517, 2N6520
25
20
15
10 mAde, VCE
mAde, VCE
100 mAde, VCE
=
=
10 Vde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-68
-
-
NPN 2N6515 thru 2N6517, PNP 2N6519, 2N6520
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25'C unless otherwise noted)
Characteristic
Symbol
Max
Min
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
(IC = 20 mAde, IB = 2.0 mAde)
(lC = 30 mAde, IB = 3.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter S~turation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 20 mAde, IB = 2.0 mAde)
(lC = 30 mAde, IB = 3.0 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 10 Vdc)
VBE(on)
-
fT
Unit
Vde
-
0.30
0.35
0.50
1.0
Vde
-
0.75
0.85
0.90
-
2.0
Vde
40
200
MHz
-
6.0
pF
-
80
100
ton
-
200
ns
toft
-
3.5
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(IC = 10 mAde, VCE = 20 Vde, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
=
Emitter-Base Capacitance
(VEB = 0.5 Vde, IC = 0, f
Ceb
1.0 MHz)
pF
Ceb
=
2N6515 thru 2N6517
2N6519, 2N6520
1.0 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 100 Vde, VBE(oft)
Turn-Oft Time
(VCC = 100 Vde, IC
=
=
=
2.0 Vde, IC
=
50 mAde, IBl
50 mAde, IBl
IB2
=
=
10 mAde)
10 mAde)
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
PNP
NPN
FIGURE 1 - DC CURRENT GAIN
2N6519
2N6515,2N6516
200
200
-
lL
100
Iz
~
....
f-"
10
u
30
20
-1.0
TJ
~ 12ioc
r-..
;'\\
2loc
--
r--."
-55°C
-~loc
50
'"
~
VCE=10V
TJ = 1250 C
VCE=10V
~~
0
2.0
3.0
5.0 1.0
10
20
30
50
10
20 1.0
100
2.0
3.0
5.0
1.0
10
20
IC. COLLECTOR CURRENT {mAl
IC, COLLECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-69
30
50
10
100
•
NPN 2N6515 thru 2N6517, PNP 2N6519, 2N6520
FIGURE 2 - DC CURRENT GAIN
•
_
--
200
I ,I_
i- VCE = 10 V
100
z
:;: 70
...'"
~
a
"
~
0
50
~
2N6517
2N6520
200
......
25°C
........
V
100
-55°C
:;:
\
a
30
-55°C
"
~
20
10
2.0
25°C
z 70
10
1.0
II
TJ = 125°C
'" 50
~ ......
20
V~E = 10 v
§
-
30
'-
"
TJ '12~OC
3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT ImA)
50
70
100
2.0
1.0
3.0
5.0 7.0 10
20
30
Ic, COLLECTOR CURRENT ImA)
50
70
100
50 70
100
FIGURE 3 - CURRENT-GAIN - BANDWIDTH PRODUCT
2N6515, 2N6516, 2N6517
2N6519,2N6520
~ 100
~100
~
...
~
10
~...
o
50
o
g
,/
~
v
'" \
TJ = 25°C
VCE=20V
f = 20 MHz
/"
~ 30
70
~
;: 50
\
~ 30
.:,
~
20
.c:
10 1.0
~
\
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT ImA)
30
50
~
70
~
100
V
/
TJ = 25°C
VCE = 20 V
f=20MHz
V
20
a
2.0
/'
i;
3:
o
!
i
-
~
to
1.0
2.0
3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
PNP
NPN
FIGURE 4- "ON" VOLTAGES
2N6515, 2N6516, 2N6517
1.4
Tr~50f
1.2
TJ = 25°C
1.0
I I I
I I I
1.0
I I I
I I I
VSElsa~) ~ IC~IS = 10
>
~ 0.6
>
I I I
1.2
S
0.8
o
~
0
2N6519,2N6520
1.4
I II
VSElon) @VCE = 10 V
f-
-
s
~ O.8 - f-
1---
"'~
:;
I I I IIII
I I I I I II
0.4
V6E(sa~i @IIC)ISI=ll~
0.2
o
1.0
2.0
0.6
-
VSElsa,) @ICIIS
I
10
f- - VSE(on) @VCE = 10 V
I I II I
I I II I
'"~. O.4
o. 2f-- - - VCE(",)@IC/IS= 10
-.~
VCEI,,') @ICllp" 5.0
3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
0
1.0
I
2.0
3.0
I
1-- -I
VCElsatl@IC/IS=5.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-70
I
50
70 100
NPN 2N6515 thru 2N6517, PNP 2N6519, 2N6520
FIGURE 5 - TEMPERATURE COEFFICIENTS
2.5
k~
/0
IS
2.0
~
i
2.5
I I
I I
1.5
-
IL
J
21
5°C to l125 C
~ 1.0
1 -I. V
r- RiNC lor VCE(satl
0.5
r:-r
-sslCtol::
-I
~ -1.0
I
1
3.0
5.0 7.0 10
20
IC. COLLECTOR CURRENT (mA)
30
i
1.0
IC
IB
<
I
10
IV
1.5
25°C to 125°C
I
.h
RiNB lor VBE
0.5
-55°C to 250C
I
I-
1-1.0
r\
-5~OCm
~-1. S - RiNC lor VCE(satl
1
a:: -2.0
2.0
1\
-550C to 125°C
~-1.5 f-- ~iNB lfor VBE
2.0
~ -0.5
I'-.
-1-
i
~
1
il!
~ -0. 5
•
2N6519.2N6520
2N6515. 2N6516. 2N6517
-2.0
50
-2. 5
70 100
1.0
2.0
20
30
3.0
50 7.0 10
IC. COLLECTOR CURRENT (mAl
50
70
100
FIGURE 6 - CAPACITANCE
2N6519.2N6520
2N6515. 2N6516. 2N6517
100
100
70
50
70
50
TJ 25 0 C=
30
~ 20
r-
u
z
;: 10
z
g
«
-
5 5.0
I
c.:i 3.0
2.0
0.5
1.0
10
7.0
Ccb
5 5.0
Ccb
0.2
.1
"
r--
w
u
~ 7.0
1.0
I
20
w
TJ 25°C =
Cob
r--
30
Cob
u
r--
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTS)
50
100
3.0
2.0
1.0
200
0.2
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTS)
NPN
50
100
200
PNP
FIGURE 7 - TURN-ON TIME
2N6515. 2N6516. 2N6517
1.0 k
700
500
300
200
"
.......
""
td @VBE(offi
<
2.0 V -
r-
2N6519.2N6520
1.0 k
700
500
VCE(offi 100 V
IC/IB - 5.0
TJ - 25°C
td@VBE(olf)- 2.0 V
300
........
~
~
100
~
VCE(offl- 100 V'ICIIB =5.0
TJ 25°C
I"-
tr
200
tr "
]
~
"-...
100
w
70
i= 50
70
'"
50
oJ
"""
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20
IC. COLLECTOR CURRENT (mAl
30
30
20
50
70
10
100
1.0
2.0
3.0
5.0 7.
10
2
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-71
0
0
7
1
NPN 2N6515 thru 2N6517, PNP 2N6519, 2N6520
FIGURE 8 - TURN-OFF TIME
•
2N6515, 2N6516, 2N6517
2N6519,2N6520
2.0 k
10 k
7.0 k
5.0 k
3.0 k
700
- l - t-
2.0 k
50 0
700
50 0
VCEloffl-100 V'=
IC/IB 5.0
IB1 = IB2 TJ = 25'G_
.......'f
VCEloffi = 100 V
IC/IB = 5.0
IB1 IB2
TJ 25'C
~1.0k F== ~ ~'f
~
= F= +-
'I'
1.0 k
's
300
200
]
w
'">=
t-....
100
70
300
50
200
r-....
2.0
3.0
5.0 7.0
.......
10
0
20
50
30
70
0
100
1.0
2.0
3.0
5.0 7.0
20
10
30
50
70
100
IC, COLLECTOR CURRENT ImAI
IC, COLLECTOR CURRENT ImAI
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
+Vcc
2.2 k
20 k
......---"/1/\----4111
50
.n
Sampling Scope
I
1.0 k
I
~
50
1/2MSD7000
Pulse Width I:::: 100 j.ls
t r , tf ~ 5.0 ns
Duty Cycle ~ 1.0%
For PNP Test Circuit, Reverse All Voltage Polarities
Approximately
-1.35 V
(AdJust for VSE(off) "" 2.0 V)
FIGURE 10 - THERMAL RESPONSE
1- 0
O. 7
O. 5 t--O = 0.5
~o
f-- 02
-
~
a 20
0:
~
100 ms
50
10
j 5.0
__ r--
~2.0
I-- Curves apply
I-- below rated VCEO
1.0
0.5 0.5
Pp
......
CURRENT LIMIT
• THERMAL LIMIT
(PULSE CURVES@TC 25°C)
SECONO BREAKDOWN LIMIT
-
8
r---...
1.0
f--f--
\
....
I
.......-,
2N6515
2N6516.2N6519
2N6517,2N6520
2.0
5.0
10
20
50 100
200
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
'1
I
I
t--
I
I
I
1-,/f------l
500
Dutv Cvcle
= tT
f '" ~
'p
Peak Pulse Power = Pp
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-73
Pp
11
•
BC171,A,B
BC172,A,B,C
BC174,A,B
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
174 171 172
Unit
Collector-Emitter Voltage
VCEO
65
45
25
Vdc
Collector-Base Voltage
VCBO
80
50
30
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current - Continuous
IC
100
mAde
Total Device Dissipation @ T A = 25°C
Derate above 25°C
Po
350
2.8
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AAI
, :~-
12
THERMAL CHARACTERISTICS
I
I
Thermal Resistance, Junction to Ambient I
Characteristic
Thermal Resistance, Junction to Case
I
3 Emitter
3
ELECTRICAL CHARACTERISTICS (TA
I
I
Max
R9JC
125
I
I
°C/W
I
I
R/iJC
J
357
1
°C/W
I
Symbol
Unit
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to BC546 for graphs.
= 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
-
0.2
0.2
0.2
-
15
15
15
4.0
90
150
270
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 2.0 mA, IB = 0)
V(BR)CEO
BC174
BC171
BCI72
Emitter-Base Breakdown Voltage
(IE = 100 p.A. IC = 0)
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, VBE = 0) TA
65
45
25
V(BR)EBO
BC171
BC172
BC174
6.0
6.0
6.0
ICES
BC174
BC171
BC172
= 125'C
-
V
V
nA
pA
ON CHARACTERISTICS
DC Current Gain
(lC = 10 "A, VCE
(lc
(lc
= 5.0 V)
= 2.0 mA, VCE = 5.0 V)
= 100 mA, VCE = 6.0 V)
hFE
BCI71A12A14A
BC171 B/28/4B
BC172C
-
BC174
BC171
BCI72
BCI71A12A14A
BC171B/2B/4B
BCI72C
120
120
120
120
180
380
-
BCI71A12A14A
BC171B/2B/4B
BC172C
-
Coliector·Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl
(lC = 100 mA, IB = 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl
VBE(sat)
-
Base-Emitter On Voltage
(lC = 2.0 mA, VCE = 5.0 V)
VBE(on)
0.55
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-74
-
180
290
520
450
800
800
220
460
800
120
180
300
-
0.09
0.2
0.25
0.6
0.7
-
V
-
0.7
V
-
V
BC171,A,B, BC172,A,B,C, BC174,A,B
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
I
I
Characteristic
I
Type
Symbol
I
Min.
Typ.
150
150
150
300
300
300
Max.
Unit
DYNAMIC CHARACTERISTICS, SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 rnA, VCE = 5 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, IC = 0, f
Input Capacitance
(VBE = 0.5 V, IC
1.7
Noise Figure
(IC = 0.2 rnA, VCE = 5 V, RS
f = 1 KHz, M = 200 Hz)
4.5
pF
Cibo
= 0, f = 1 MHz)
=I
pF
Cobo
= 1 MHz)
Small-Signal Current Gain
(lc = 2 rnA, VCE = 5 V, f
MHz
fT
BC171
BCI72
BC174
10
BC1711172/174
BC171 Al2A14A
BC171 B/2B/4B
BC172C
KHz)
hfe
125
125
240
450
220
330
600
900
260
500
900
2
2
2
10
10
10
NF
=2
KOhms,
BCl71
BCI72
BC174
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-75
dB
11
•
BC182,A,B
BCl83,A,B,C
BC184,B,C
MAXIMUM RATINGS
Symbol
Rating
BC BC BC
182 183 184
Unit
Collector-Emitter Voltage
VCEO
50
30
30
Vdc
Collector-Base Voltage
VCBO
60
45
45
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
100
mAdc
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
350
2.8
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
1.0
8.0
Watt
mW/oC
TJ, T stg
-55to+150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
;~
3 Emitter
THERMAL CHARACTERISTICS
3
Symbol
Max
Unit
Thermal Resistance. Junction to Case
Characteristic
RHJC
125
°C/W
Thermal Resistance, Junction to Ambient
RIIJC
357
°C/W
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to BC237 for graphs.
ELECTRICAL CHARACTERISTICS (TA
I
=
25°C unless otherwise noted.)
I
Min
Typ
50
30
30
-
-
-
60
45
45
-
-
6.0
-
-
-
0.2
0.2
0.2
15
15
15
-
-
15
BC182
BC183
BC184
40
40
100
-
-
-
BC182
BC183
BC184
120
120
250
BC182
BC183
BCI84
80
80
130
Characteristic
Symbol
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAo IB = 0)
V
V(BR)CEO
BC182
8C183
BC184
Collector-Base Breakdown Voltage
(lC = 10 pA, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 pA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 50 V, VBE = 0)
(VCB = 30 V, VBE = 0)
ICBO
BC182
BC183
BCI84
Emitter-Base Leakage Current
(VEB ~ 4.0 V, IC ~ 0)
lEBO
-
V
V(BR)CBO
BC182
BCI83
BC184
-
-
-
V
nA
nA
ON CHARACTERISTICS
DC Current Gain
(lC = 10 pA, VCE
(lc
(lc
=
=
hFE
= 5.0 V)
2.0 mA, VCE
100 mA, VCE
= 5.0 V)
= 5.0 V)
Collector-Emitter On Voltage
(lC
(lC
Base-Emitter Saturation Voltage
(lC
Base-Emitter On Voltage
(lc
(lC
(lc
~
=
=
=
=
=
10 mA, IB = 0.5 mAl
100 mA, IB = 5.0 mAlo
100 mA, IB
=
VCE(sat)
5.0 mAlo
VBE(sat)
100 p.A, VCE = 5.0 V)
2.0 mA, VCE = 5.0 V)
100 mA, VCE = 5.0 V)"
VBE(on)
0.55
-
*Pulse Test: Tp 300 s, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-76
-
500
800
800
-
-
-
0.07
0.2
0.25
0.6
V
-
1.2
V
-
V
0.5
0.62
0.83
0.7
-
BC182,A,B, BC183,A,B,C, BC184,B,C
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 0.5 rnA, VCE = 3.0 V, f = 100 MHz)
(lc
=
10 rnA, VCE
= 5.0 V, f =
100 MHz)
fT
BC182
BC183
BC184
BC182
BC183
BCl84
-
-
-
-
100
120
140
150
150
150
200
240
280
-
MHz
-
-
Common Base Output Capacitance
(VCB = 10 V, Ic = 0, f = 1.0 MHz)
Cob
-
-
5.0
pF
Common Base Input Capacitance
(VBE = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
-
8.0
-
pF
-
500
900
900
260
500
900
Small-Signal Current Gain
(lc = 2.0 rnA. VCE = 5.0 V, f
=
Noise Figure
(lC = 0.2 rnA, VCE = 5.0 V, RS
f = 30 Hz to 15 kHz)
(lc = 0.2 rnA, VCE = 5.0 V, RS
f = 1.0 kHz, F = 200 Hz)
hfe
1.0 kHz)
BC182
BC183
BCl84
BC182A, BC183A
BC182B,BC183B,BCl84B
BCl83C, BC184C
125
125
240
125
240
450
-
NF
dB
= 2.0 kohms,
BC184
=
-
2.0 kohms,
BC182
BC183
BC184
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-77
2.0
4.0
2.0
2.0
2.0
10
10
4.0
II
•
BC212,A,B
BC213,A,B,C
BC214,B,C
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
212 213 214
Unit
Collector-Emitter Voltage
VCEO
50
30
30
Vdc
Collector-Base Voltage
VCBO
60
45
45
Vdc
Emitter-Base Voltage
VEBO
Collector Current - Continuous
5.0
Vdc
IC
100
mAde
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
350
2.8
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
,
~~'''~'
'2
3 Emitter
3
THERMAL CHARACTERISTICS
Characteristic
AMPLIFIER TRANSISTORS
Thermal Resistance, Junction to Case
PNP SILICON
Thermal Resistance, Junction to Ambient
Refer to BC307 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
I
Characteristic
= 25°C unless otherwise noted)
Type
I
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 2.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 101'A, IE = 0)
Emitter-Base Breakdown Voltage
(IE = lOI'Adc, IC = 0)
Collector-Emitter Leakage Current
(VCB = 30 V)
Emitter-Base Leakage Current
(VEB = 4 V, IC = 0)
V(Bfl)CEO
BC212
BC213
BC214
V(BR)EBO
BC212
BC213
BC214
ICBO
BC212
BC213
BC214
lEBO
BC212
BC213
BC214
Vdc
-
-
-
-
--
60
45
45
-
-
-
Vdc
V(BR)CBO
BC212
BC213
BC214
-
50
30
30
5
5
5
-
-
--
--
---
-
-
-
15
15
15
nAdc
-
15
15
15
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 10 I'Adc, VCE
(lc
(lc
=2
mAde, VCE
=5
=5
hFE
Vdc)
Vdc)
= 100 mAde, VCE = 5
Vdc)'
BC212
BC213
BC214
40
40
100
BC212
BC213
BC214
60
SO
140
-
BC212,BC214
SC213
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-78
Vdc
nAdc
-
-
-
--
-
-
-
-
-
120
140
600
-
-
BC212,A,B, BC213,A,B,C, BC214,B,C
ELECTRICAL CHARACTERISTICS (eontinuedl (TA = 25°C unless otherwise notedl
Characteristic
Type
Symbol
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 0.5 mAdel
(IC = 100 mAde, IB = 5 mAde)'
VCE(satl
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 5 mAde)
VBE(sat)
Base-Emitter on Voltage
(lc = 2 mAde, VCE = 5 Vde)
VBE(on)
Min
Typ
Max
--
0.10
0.25
-
--
1.00
1.4
0.6
0.62
0.72
-
Unit
Vde
0.6
Vde
Vde
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 10 mAde, VCE = 5 Vde,
1= 50 MHz)
--
BC212
BC214
BC213
--
Common-Base Output Capacitance
(VCB = 10 Vde, IC = 0, I = MHz)
Cob
Noise Figure
(lc = 0.2 mAde, VCE = 5 Vde,
RS = 2 Kohms, 1= 30 Hz to 15 KHz)
(lc = 0.2 mAde, VCE ~ 5 Vde,
RS = 2 Kohms, I = 1 KHz, I = 200 Hz)
Small Signal Current Gain
(IC = 2 mAde, VCE = 5 Vdc, I
=
MHz
IT
--
-
-
pF
6.0
NF
d8
BC214
--
-
2
BC213
BC212
---
-
10
10
--
--
hie
1 KHzl
280
320
360
BC212
BC213
BC214
BC212A,BC213A
BC212B, BC213B,
BC214B
BC213C, BC214C
60
80
140
100
200
200
350
'Pulse-test: Tp 300 s, Duty-cycle 2%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-79
---
--
-
-
-
300
400
400
600
•
II
BC237,A,B,C
BC238,A,B,C
BC239,B,C
MAXIMUM RATINGS
Rating
Symbol
BC
BC
BC
Unit
237 238 239
Collector-Emitter Voltage
VCEO
45
25
25
Vdc
Collector-Emitter Voltage
VCES
50
30
30
Vdc
Emitter-Base Voltage
VEBO
6.0 5.0 5.0
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Collector Current - Continuous
IC
100
mAdc
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
350
2.8
mWjOC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
- 55 to +150
·C
Operating and Storage Junction
Temperature Range
1 Collector
:.~
mW
3 Emitter
THERMAL CHARACTERISTICS
I
I
Characteristic
I
I Thermal Resistance, Junction to Case
I Thermal Resistance, Junction to Ambient I
I
I
Max
Unit
ReJC
125
°C/W
ReJC
I
357
°C/W
Symbol
AMPLIFIER TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Type
I
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 2.0 mA, IB = 0)
BC237
BC238
BC239
V(BR)CEO
45
25
25
V
Emitter-Base Breakdown Voltage
(IE = 100 ~A. IC = 0)
BC237
BC238
BC239
V(BR)EBO
6
5
5
V
BC238
BC239
BC237
ICES
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 50 V, VBE
= 0)
= 30 V,
= 50 V,
= 0)
= 0)
(VCE
(VCE
VBE
VBE
TA
TA
=
=
125°C
125°C
BC238
BC239
BC237
0.20
0.20
0.20
15
15
15
nA
0.20
0.20
0.20
4
4
4
~A
ON CHARACTERISTICS
DC Current Gain
(IC = 10 ~A, VCE = 5 V)
hFE
BC237 A/238A
BC237B/238B/239B
BC237C/238C/239C
(lc
(lc
=2
=
mA. VCE
=5
100 mA, VCE
BC237
BC238
BC239
BC237A/238A
BC237B/238B/239B
BC237C/238C/239C
V)
=5
90
150
270
V)
Collector-Emitter On Voltage
(lc = 10 mA, IB = 0.5 mAl
(lc = 100 mA, IB = 5 mAl
120
120
120
120
200
380
120
180
300
BC237 A/238A
BC237B/238B/239B
BC237C/238C/239C
BC237/BC238/BC239
BC237/BC239
BC238
Base-Emitter Saturation Voltage
(lc = 10 mA. IB = 0.5 mAl
(lc = 100 mA, IB = 5 mAl
Base-Emitter On Voltage
(lc = 100 ~A, VCE = 5 V)
(IC = 2 mA. VCE = 5 V)
(IC = 100 mA, VCE = 5 V)
170
290
500
800
800
800
220
460
800
VCE(sat)
0.07
0.20
0.20
0.60
0.8
V
VBE(sat)
0.60
0.83
1.05
V
V
VBE(on)
0.55
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-80
0.50
0.62
0.83
0.70
BC237,A,B,C, BC238,A,B,C, BC239,B,C
ELECTRICAL CHARACTERISTICS (continuedl (TA
I
Characteristic
~ 25°C unless otherwise notedl
I
Type
Symbol
I
Min.
Typ.
Max .
Unit
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc ~ 0.5 rnA. VCE ~ 3 V. I ~ 100 MHzl
(lc
~
lOrnA. VCE
~
5 V. I
~
100 MHzl
100
120
140
BC237
BC238
BC239
150
150
150
Collector-Base Capacitance
(VCB ~ 10 V. IC ~ 0, I ~ 1 MHzl
Cobo
Emitter-Base Capacitance
(VSE ~ 0.5 V, IC ~ 0, I ~ 1 MHzl
C,bo
Noise Figure
(lc ~ 0.2 rnA, VCE ~ 5 V, Rs
I = 30 Hz to 15 KHzl
(lc
f
~
0.2 rnA, VCE ~ 5 V, RS
1 KHz, M ~ 200 Hzl
~
MHz
IT
BC237
BC238
BC239
200
240
280
pF
4.50
pF
B.O
dB
NF
~
2 Kohms,
=2
BC239
2
4
BC237
BC238
BC239
2
2
2
10
10
4
Kohms,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-81
•
BC237,A,B,C, BC238,A,B,C, BC239,B,C
FIGURE I
•
0
!
Jc1e l 110 V
~
~
~
.3
u
o
~
91-- T'A I,
ITll~OC
z
>-
FIGURE 1
NORMALIZED DC CURRENT GAIN
0
l~o'C I ' 1111
II
I 1111
I I
8
VBE(~I) (eil lellB
I
I
f1'
H
~
j...
iJ- [....1-"
'10
-
7
10
v Elan) @VeE ... 10 V
6
08
I
\
04
~ 03
~ o1
01
41-- .
r-·
3
\\
I 0
~
10
'c
0
10
100
~o
10
30 0
200
100
01
01 03
0~0710
COLLeCTOR CURRENT ImAdel
~
,
I;-f-"
1030
11111 I
10
~070
--
I
10 30
~O
70 100
2~uC
u
80
0
:.
:s
0
0
J
10
I
10
30
~
v
70
TA'I~oC
-
-
C,b
VCE· IOV
fA:
10
I
I"'-
,/'
O~ 07
I
FIGURE 4 - CAPACITANCES
u
=
!
10
3i 100
o
I
I
IC COLLECTOR CURRENT ImAdel
70
o
i
j
I
u
;:
!
VeEhat) (,,) lellB ~ I~
FIGURE 3 - CURRENT GAIN-BANDWIDTH PRODUCT
"
~
. ..
11--
400
~
>-
-
0
o~
I !
I
-
~
06
";;'
z
"SATURATION" AND ··ON" VOLTAGES
)0
........
-
r-
10
......
r-..... .......
10
10
0
04
~o
30
Ob 0810
10
IC. COLLECTOR CURRENT ImAdel
170
H-
'"
:r
~
u
I
i
I
160
..........
z
~
~ 1!tO
cc
-.
I
......
, t,
.......i'..
VeE' lOV
'"z
f\
I • 10kHz
Ci
~ 140
TA
e.
!
'l~oC
,
~
!'"
130
120
0.1
40
60 8010
VR. REVERSE VOL TAGE (VOLTS)
FIGURE 5 - BASE SPREADING RESISTANCE
Vi
"'-
~Ob
0.2
0.3
05
10
20
3.0
5.0
10
IC, COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-82
r--.......
10
40
BC251,A,B,C
BC252,A,B,C
BC256,A,B
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
BC BC BC
256 251 252
65 45 25
80
30
50
Unit
Vdc
Vdc
IC
100
mAde
Total Device DiSSipation @ TA
Derate above 25°C
= 25°C
PD
350
2.8
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW;oC
TJ, Tstg
-55to+150
°c
Collector Current - Continuous
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Vdc
5.0
1 Collector
.:~
3 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
ROJC
125
°C/W
Thermal Resistance, Junction to Ambient
ROJC
357
°C/W
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to BC556 for graphs.
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherWise noted)
I
Characte~istic
Type
I
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Ilc = 2.0 mA, IB = 0)
Emitter-Base Breakdown Voltage
liE = 100 flA, IC = 0)
= 20 V, TA =
V
65
45
25
V
VIBR)EBO
BC256
BC251
BC252
Collector-Emitter Leakage Current
IVCES = 40 V)
IVCES = 20 V)
IVCES
VIBR)CEO
BC256
BC251
BC252
5
5
5
nA
ICES
BC256
BC251
BC252
125°C)
2
2
2
100
100
100
4
4
4
BC256
BC251
BC252
flA
ON CHARACTERISTICS
DC Current Gain
IIC = 10 flA, VCE
(IC
(lc
=2
=
mA, VCE
hFE
= 5 V)
BC251A/2A/6A
BC251 B/2B/6B
BC252C
= 5 V)
100 mA, VCE
90
150
270
BC256
BC251
BC252
BC251A/2A/6A
BC251 B/2B/6B
BC251C/BC252C
= 5 V)
125
120
120
120
180
380
BC251A/2A/6A
BC251 B/2B/6B
BC252C
170
290
500
500
800
800
220
460
800
120
180
300
Collector-Emitter Saturation Voltage
(IC = 10 mA. IB = 0.5 mAl
(lC = 100 rnA, IB = 5 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 rnA, IB = 0.5 rnA)
(lC = 100 mA, IB = 5 rnA)
VBE(sat)
Base-Emitter on Voltage
(lC = 2 mA. VCE = 5 V)
VBE(on)
V
0.075
0.25
0.3
0.65
V
0.70
1.00
V
0.55
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-83
0.62
0.70
BC251,A,B,C, BC252,A,B,C, BC256,A,B
ELECTRICAL CHARACTERISTICS (continued) (T A
•
= 25°C unless otherwise noted)
Type
Characteristic
Symbol
Min .
Typ.
Max.
Unit
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 rnA. VCE = 5 V, f = 50 MHz)
BC256
BC251
BC252
Output Capacitance
(VCB = 10 V, IC = 0, f = 1 MHz)
tr
MHz
280
320
360
pF
Cob
Noise Figure
(IC = 0.2 rnA, VCE = 5 V, RS = 2 Kohms,
f = 1 KHz, at = 200 Hz)
3
6.0
2
2
2
10
10
10
NF
8C256
8C251
BC252
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-84
dB
BC307,A,B,C
BC308,A,B,C
BC309,A,B,C .
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
307 308 309
Unit
Collector-Emitter Voltage
VCEO
45
25
25
Vdc
Collector-Base Voltage
VCBO
50
30
30
Vdc
Emitter-Base Voltage
VEBO
Collector Current - Continuous
5.0
Vdc
IC
100
mAde
Total Device Dissipation @TA
Derate above 25 DC
= 25 DC
Po
350
2.B
mW
mW/DC
Total Device Dissipation @TC
Derate above 25 DC
= 25 DC
Po
1.0
B.O
TJ, Tstg
-55 to +150
Watt
mW/DC
DC
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
~~
3 Emitter
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance, Junction to Case
I
I
I Thermal Resistance, Junction to Ambient I
Symbol
Max
Unit
I
ReJC
125
°C/W
RI/JC
357
°C/W
I
I
ELECTRICAL CHARACTERISTICS (TA
Characteristic
=
AMPLIFIER TRANSISTORS
PNPSILICON
25°C unless otherWise noted)
I
Type
I
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 2.0 mAde, IB = 0)
BC307
BC30B
BC309
V(BR)CEO
45
25
25
Emitter-Base Breakdown Voltage
(IE = 100 \-lAde, IC = 0)
BC307
BC30B
BC309
V(BR)EBO
5
5
5
Collector-Emitter Leakage Current
(VCES = 50 V, VBE = 0)
(VCES = 30 V, VBE = 0)
(VCES
(VCES
= 50 V,
= 30 V,
VBE
VBE
= 0)
= 0)
TA
TA
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
15
15
15
4.0
4.0
4.0
90
150
270
-
-
Vdc
Vdc
nA
ICES
= 125°C
= 125°C
Vdc
BC307
BC30B
BC309
BC307
BC30B
BC309
\-lA
ON CHARACTERISTICS
DC Current Gain
(lc = 10 !-lAde, VCE
(lc
(lc
=2
=
mAde, VCE
hFE
= 5 Vdc)
= 5 Vdc)
100 mAde, VCE
=5
Vde)
BC307A/30BA/309A
BC307B/30BB/309B
BC307C/30BC/309C
-
BC307
BC30B
BC309
BC307A/30BA/309A
BC307B/30BB/3098
BC307 C/ 30BC/ 309C
120
120
120
120
200
420
BC307A/30BA/309A
BC307B/30BB/309B
BC307C/30BC/309C
-
-
-
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 0,5 mAde)
(lc = 10 mAde, IB = see Note I)
(IC = 100 mAde, IB = 5 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 0.5 mAde)
(lc = 100 mAde, IB = 5 mAde)
VBE(sat)
Base-Emitter on Voltage
(lc = 2 mAde, VCE = 5 Vdc)
VBE(on)
Notel: IC
= 10 mAde on
170
290
500
-
120
lBO
300
-
0.10
0.30
0.25
-
0.70
1.00
BOO
BOO
BOO
220
460
BOO
Vdc
0.30
0.60
-
-
Vdc
-
Vdc
0.55
= 11
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-85
-
-
-
the constant base current eharacterostle, which Yields the POint IC
-
0.62
mAde, VCE
0.70
=1V
BC307,A,B,C, BC308,A,B,C, BC309,A,B,C
ELECTRICAL CHA,RACTERISTICS (continued) (TA = 25°C unless otherwise noted)
•
Characteristic
Symbol
Type
Min.
Typ.
Max.
Unit
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 mAde, VCE = 5 Vdc, f = 50 MHz)
BC307
BC308
BC309
Collector-Base Capacitance
(VCB = 10 Vdc, IC = 0, f = 1 MHz)
Noise Figure
(lc = 0.2 mAde, VCE = 5 Vdc,
RS = 2 Kohms, f = 30 Hz to 15 KHz)
(lC
RS
= 0.2 mAde, VCE = 5 Vdc,
= 2 Kohms, f = 1 KHz, f = 200 Hz)
fT
-
-
Ccbo
-
280
320
360
-
-
pF
6.0
dB
NF
BC309
-
2
'4
BC307
BC308
BC309
-
-
2
2
2
10
10
4
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-86
MHz
-
BC307,A,B,C, BC308,A,B,C, BC309,A,B,C
FIGURE' - NORMALIZED DC CURRENT GAIN
FIGuRE 2 - ··SATURATlON·· AND "ON" VOL TAGES
10
2.G
z
;C
VCE" 10V
TA-ZSoC
1.5
0.9
~
~ 0.7
...
\
:::;
c
~
\
~ 0.4
>
> 0.3
o
0.2
VCEIIot,.1c/18 -10
1.0
U
2.0
5.0
10
50
20
100
o
200
0.1
D.2 03 0.5 0.7 I 0
Ie. COLLECTOR CURRENT ImAde)
:::>
a
200
%
150
~
~I
Z
;C
V
00
-
~
.....
JCE-IOJ
TA-Z!'C
i-""
-Cill
.0
.0
~r-
IO~
..........
......
.0
TA-ZSoC_
-
~
Colo
10
~
i...
'"
50 7D 100
FIGURE 4 - CAPACITANCES
0
I
~
~ JIIII
20 311
2.0 3.0 5.0 7.0 10
IC. COLLECTOR CURRENT ImAde'
FIGURE 3 - CURRENT-GAIN-BANDWIDTH PRODUCT
%400
I;
i-"
O. I
0.2
...
VIE Ion'. VCE - 10 V
0.6
c
0.3
0.2
•
i-'
1--....
~ D.ft
'\.
a
i
I I Jl HI
VIEIIot,·Ic/11 -10
...
1.0
a
...NO.5
Z
~ !SO~
;;; 0.7
:::>
o
TIl.
0.1
CD
.§
r-
-
u
~
2Il
0.5
1.0
2.0
3.0
5.0
10
I .0
311
20
0.4
0.& 0.8 I.D
2.D
FIGURE 5 - OUTPUT ADMITTANCE
2
...g
~~
O.5
O.3
...~
311
10
50
VCE -10V
1-1.0UII
TA - 2SoC
40
l/
u
c
20
1.0 1.0'0
FIGURE 6 - BASE SPREADING·RESISTANCE
I.D
iii
4.0
VR. REVERSE VOLTAGE IVOlTSI
Ie. COLLECTOR CURRENT ImAde)
/'
,
VCE-IOV
I-I.DUII
TA - ZSOC
L
I
;
a. 1
20
....
0.05
~ O.D!
1
a.oI
0.1
,
u
I"-
10
,..,
D.S
1.0
2.0
5.0
0.2
'0
0.3
o.s
1.0
Z.D
3.1
Ie. COLLECTOR CURRENT CIIIMcI
IC. COLLECTOR CURRENT ImAde'
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-87
5.D
10
•
BC317
BC317A
BC317B
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
150
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
350
2.8
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
1.0
8.0
Watt
mWrC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
1 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
125
°CIW
Thermal Resistance, Junction to Ambient
R8JC
357
°CIW
Characteristic
AMPLIFIER TRANSISTORS
NPNSILICON
Refer to BC549 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage
(lC = 1.0 mA, IB = 0)
V(BR)CEO
45
-
Collector-Emitter Breakdown Voltage
(lC = 100 pA, VBE = 0)
V(BR)CES
50
-
-
Collector-Base Breakdown Voltage
(lc = 100 p.A, IE = 0)
V(BR)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pA, IC = 0)
V(BR)EBO
6.0
-
-
Vdc
-
-
30
nAdc
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 V, IE = 0)
ICBO
Vdc
Vdc
ON CHARACTERISTICS
Base-Emitter On Voltage
(lC = 2.0 mA, VCE = 5.0 V)
(lc = 10 mA, VCE = 5.0 V)
VBE(on)
Collector-Emitter Saturation Voltage
(lC = 100 mA, IB = 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl
(lC = 100 mA, IB = 5.0 rnA)
VBE(sat)
DC Current Gain
(lC = 10 p,A, VCE = 5.0 V)
(lc = 2.0 mA, VCE = 5.0 V)
Vdc
0.57
-
-
0.72
0.77
-
0.14
0.6
-
0.7
0.85
-
BC317A
BC317B
40
90
150
-
BC317A
BC317B
110
200
180
290
450
450
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-88
Vdc
Vdc
hFE
0.63
BC317, BC317A, BC317B
I
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Spot Noise Figure
(lC = 200 pA, VCE = 5.0 V,
RS = 2.0 k!l, f = 1.0 kHz, BW
Output Capacitance
(VCB = 10 V, IE = 0, f
Input Capacitance
(VEB = 0.5 V, IC
NF
-
2.0
6.0
dB
Cob
-
2.5
4.0
pF
Cib
-
11.5
-
pF
IT
-
280
-
MHz
h re
-
2.0
-
X10-4
hie
-
5.0
-
Kohms
hoe
-
20
-
/LmhOS
125
240
220
330
260
500
= 200 Hz)
=
1.0 MHz)
= 0, f =
1.0 MHz)
Current-Gain Bandwidth Product
(lC = 10 mA, VCE = 5.0 V)
Voltage Feedback Ratio
(lC = 2.0 mA, VCE = 5.0 V, f
=
1.0 kHz)
Input Impedance
(lc = 2.0 mA, VCE
=
5.0 V, f
=
1.0 kHz)
Output Admittance
(lC = 2.0 mA, VCE
=
5.0 V, f
=
1.0 kHz)
Small-Signal Current Gain
(lc = 2.0 mA, VCE = 5.0 V, f
=
1.0 kHz)
hfe
BC317A
BC317B
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-89
II
BC320
•
.BC320A
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
150
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mWf'C
Total Device Dissipation @ Te = 25°e
Derate above 25°C
PD
1.5
12
Watt
mWf'C
TJ, Tstg
-55to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
BC320B
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 CoUector
~~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
°CIW
Thermal Resistance, Junction to Ambient
ROJC
200
°CIW
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to BC559 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lC:;O 1.0 rnA, IB = 0)
V(BR)CEO
45
-
-
Vdc
Collector-Emitter Breakdown Voltage
(lc = 100 pA VBE = 0)
V(BR)CES
50
-
-
Vdc
Collector-Base Breakdown Voltage
(lc = 100 !£A, IE = 0)
V(BR)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 !£A, IC = 0)
V(BR)EBO
6.0
-
-
Vdc
-
-
30
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 V, IE = 0)
ICBO
nAdc
ON CHARACTERISTICS
Base-Emitter On Voltage
(lc = 2.0 rnA, VCE = 5.0 V)
(lc = 10 rnA, VCE = 5.0 V)
VBE(on)
Collector-Emitter Saturation Voltage
(lC = 100 rnA, IB = 5.0 rnA)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 rnA, IB = 0.5 rnA)
(IC = 100 rnA, IB = 5.0 rnA)
VBE(sat)
DC Current Gain
(lC = 10 !£A, VCE
(lc
= 2.0
= 5.0 V)
rnA, VCE
=
5.0 V)
Vdc
0.57
-
0.68
-
0.72
0.77
0.35
0.5
-
0.77
0.99
-
BC320A
BC320B
-
50
100
-
BC320
BC320A
BC320B
110
110
200
-
450
220
450
Vdc
-
hFE
40
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-90
Vdc
-
BC320, BC320A, BC320B
I
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25"C unless otherwise
I
Characteristic
noted.)
Symbol
Min
Typ
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Spot Noise Figure
(IC = 200 /LA, VCE = 5.0 V,
RS = 2.0 kfl, f = 1.0 kHz, BW
Output Capacitance
(VCB = 10 V,IE = 0, f
Input Capacitance
(VEB = 0.5 V, IC
BC320
=
NF
-
2.0
6.0
dB
Cob
-
3.0
4.0
pF
200 Hz)
=
1.0 MHz)
= 0, f =
1.0 MHz)
Cib
tr
Current-Gain Bandwidth Product
(lC = 10 rnA, VCE = 5.0 V)
Small-Signal Current Gain
(lC = 2.0 rnA, VCE = 5.0 V, f
=
-
16
-
pF
250
-
MHz
125
125
240
-
500
260
500
hfe
1.0 kHz)
BC320
BC320A
BC320B
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-91
•
•
BC327,.16,-25,.40
BC328,.16,-25,.40
MAXIMUM RATINGS
Symbol
BC327
Be32S
Unit
Collector-Emitter Voltage
VCEO
45
25
Vdc
Collector-Base Voltage
VCBO
50
30
Rating
Emitter-Base Voltage
Collector Current -
Continuous
VEBO
Vdc
IC
800
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Vdc
5.0
3 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance. Junction to Case
R8JC
83.3
°CIW
Thermal Resistance, Junction to Ambient
ROJC
200
°CIW
Characteristic
AMPLIFIER TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
45
25
-
-
50
30
-
-
5.0
-
-
-
-
100
100
-
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mA, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 100,.A, IE = 0)
V(BR)CEO
BC327
BC328
Emitter-Base Breakdown Voltage
(IE = 10 ,.A, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC327
BC328
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC327
BC328
ICBO
lEBO
-
-
Vdc
nAdc
ICES
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
Vdc
V(BR)CES
BC327
BC328
Vdc
-
-
nAdc
100
100
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mA. VCE
-
hFE
=
1.0 V)
= 300 mA, VCE =
1.0 V)
Base-Emitter On Voltage
(lC = 300 mA. VCE = 1.0 V)
VBE(on)
-
-
Collector-Emitter Saturation Voltage
(lc = 500 rnA, IB = 50 rnA)
VCE(sat)
-
-
0.7
Vdc
Cob
-
15
-
pF
tr
-
260
-
MHz
(lc
BC327/BC328
BC327 -16/BC328-16
BC327-25/BC328-25
BC327 -40/BC328-40
100
100
160
250
40
630
250
400
630
1.2
Vdc
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f
=
1.0 MHz)
Current-Gain Bandwidth Product
(lC = 10 rnA, VCE = 5.0 V)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-92
BC327-16,-25,-40, BC328,-16,-25,-40
•
FIGURE 1 - THERMAL RESPONSE
f-n
-.---
11'
'--01
01
......-r
1 005
H:t t;;~
P
-
I-
IJlJ1 --
--VJC(t)=c(t}UJC
DOl
~INGLEPULSE
1
I
'
;,..-,
f-"'
0001
1
'
I
i II
iI
I I ! i
nn 1
0002
t ':- J
'
.;.-1 S1 NGLEPULSE I
0005
002
001
005
-
PULSE TRAIN SHOWN
READ TIME AT t1
02
20
10
05
i
I
TJ{pk) - Te . P(pk} 0JC(t}
DUTY CYCLE, 0" 11112
01
OJC ~ JOQoC/W Max
°JAlt) " rlt! OJA
VIA= 351 0 ClWMax
o CURVES APPLY FOR POWER
20
10
50
100
50
t, TIME (SECONDS)
FIGURE 2 - ACTIVE REGION SAFE OPERATING AREA
1000
"',
;:;
.s....
~
0
Ff
~25d~ttt,
~
=>
u
~
'" '"
-- t-f-+ 1 s
'"' l'
100
t----
~
I
-+-~j
FIGURE 3 - OC CURRENT GAIN
100 0
r=--1 m,s\
de
TC
" ""~
1----1 TJ -
VCE-l V_
TA - 25"C
135 "C
10DJis
25 "C
I
t----
:
i-..",
i"-
--+::--
.~±J~-t
LI:~'T
':
0
--
(applies beluw (Idled VCEO)
1
10
"-
i
10
100
01
II
II
6
::::
~a:
o
Ic~10mA
0
100mA
IC
II I IIII
B
1\
1111
\,~ _150101~A
6
~
~
0
.01
1
11111
100
il
I
1000
TA- 125}C
VOLTAGES
Jd:
III
111111
Illlll
VBEI,,')'" IC/j.-~
IU..-t::::H1
~) ,lvc~ _11 ~
\
300 rnA
~
4
0.4
8 o. 2
>
IC~
I
10
FIGURE 5 - "ON"
+)2l!'~
o
w
I'
IC, COLLECTOR CURRENT ImA)
0
B
1
,
30
'0
~
~
,
i
I
VCE, COLLECTOR EMITTER VOLTAGE
>
'" '\
i
I
FIGURE 4 - SATURATION REGION
to
,!
,
10
:;
'"
!
p~
"CURRENT
r- THERMAL LIMIT
1 -i--SECONO BnEAKDDWN LIMIT
~
W
,
' ill
--
8
:;;
,
:
1\
-
2
I'--
-[ :..iftIIJ
VCElsa,l'o ICIIB 0
,1
10
10
100
1
...... V
100
IC, COLLECTOR CURRENT ImAI
IB, BASE CURRENT ImA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-93
1000
BC327-16,-25,-40, BC328,-16,-25,-40
•
FIGURE 7 - CAPACITANCES
FIGURE 6 - TEMPERATURE COEFFICIENTS
100
1
1111111
I 111111
OVC for VCE(",)
-.. t-....
~
~
0
.S
w
u
C,b
z
-
1
1
-
"VB for VBE
I
I
10
100
.
10
t--
~
u
u-
Cob
'I
1
1
0.1
1000
10
VR. REVERSE VOLTAGE (Volts)
IC. COLLECTOR CURRENT
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-94
100
BC337,-16,-25,-40
BC338,-16,-25,.40
MAXIMUM RATINGS
Symbol
BC337
BC33S
Unit
Collector-Emitter Voltage
VCEO
45
25
Vdc
Collector-Base Voltage
VCBO
50
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Rating
IC
800
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
mW
.:_-Et)
3 EmItter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
ROJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
ROJC
200
°CIW
ELECTRICAL CHARACTERISTICS (TA
=
AMPLIFIER TRANSISTORS
NPN SILICON
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
45
25
-
-
-
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mA, IB = 0)
Collector-Emitter Breakdown Voltage
(lc = 100 pA, IE = 0)
Vdc
V(BR)CEO
BC337
BC338
V(BR)CES
BC337
BC338
50
30
Emitter-Base Breakdown Voltage
(IE = 10/LA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC337
BC338
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC337
BC338
ICBO
ICES
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
lEBO
5.0
-
-
-
-
Vdc
Vdc
nAdc
100
100
nAdc
100
100
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 100 mA. VCE
(lc
=
= 300 mA, VCE =
-
hFE
1.0 V)
BC337/BC338
BC337 -16/BC338- 16
BC337-25/BC338-25
BC337 -40/BC338-40
1.0 V)
100
100
160
250
60
-
-
630
250
400
630
-
Base-Emitter On Voltage
(lc = 300 mA, VCE = 1.0 V)
VBE(on)
-
-
1.2
Vdc
Collector-Emitter Saturation Voltage
(lC = 500 mA. IB = 50 mAl
VCE(sat)
-
-
0.7
Vdc
Cob
-
15
-
pF
IT
-
210
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f
=
1.0 MHz)
Current-Gain Bandwidth Product
(lc = 10 mA, VCE = 5.0 V)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-95
•
BC337,-16,-25,-40, BC338,-16,-25,-40
•
ifB-mII-- nil
FIGURE 1 - THERMAL RESPONSE
~ :~D"05
~
~UJ
03-02
~::i
02 - 0 1
~u
-:§I--
~-_
'
---F-T
I ! __ - -
~~ g~ ~o-~05~1~--~EI~;;::;;-~il~
il+~,~r-~~~I t
~SI~GLEP,U~:1.
::: :::
~
0I
;;( 007
005
<:(:I:
~C; r-003
~
002
- - OJCltl" 111 OJC
i l l J l p f l l " - I - _ _ ~j;(~)l~~~tf~~AMaX
1,
~
I
0001
0005
ii
005
001
001
01
01
1,
'-.
I'
.......
f--";k,
'"13
"-
f==lm,'I;:
"de
"-
io-.,
:-j TJ - 135 "C
-
--
z
;;:
\
to
~
r-
f-
~
"-
100
'"
13
r100
f-
u
0
8
.......
-1 --
CURRENT LIMIT
THERMAL LIMIT
SECONO BREAKOOWN LIMIT
(applies below rated VCEO)
1
10
VeE
w
to
30
'"
w
10
01
100
I- Tj ~ 25'''t
II
I~I- 50h m~
c'"
~
II
I
10
100
1000
TA~115!C
II IIII
VBE!"t) ,., IC/I,B~
j:::I::I=R1f
[, I.
VB Elan)" VCE ~ 1 V
0.6
w
to
~
~
'"':;
IC - 10 rnA
0
>
>'
0
~
Ic-l00ml':
0.2
\
~
>
;-..
'i ;[[
I
,
DB
0.6
a, 0.4
~
I
,
~HH
f-t
11
I
t..H
I
,,
FIGURE 5 - "ON" VOLTAGES
10
II
0.8
T
-4
IC, COLLECTOR CURRENT IAmpl
ff-
8
Ji
tit
COLLECTOR·EMITTER VOLTAGE
'"
':;
0
>
100
50
-t
i I
"-
FIGURE 4 - SATURATION REGION
'0
~
20
VCE - 1 V
TJ-15"C
i
10
:;
10
FIGURE 3 - DC CURRENT GAIN
100",
TC~15"C
"
TA~15"C
1.0
50
1000
;;:
E
:2
I
DCURVESAPPLYFORPOWER!
10
10
05
FIGURE 2 - ACTIVE REGION SAFE OPERATING AREA
'"
nIA~1!i1oC/WMax
TIME ISECONDS)
1000
0
J
I!
I
t,
f-
11
•
I,
t1
~~~SD'r;~~'~;~tDWN
I
001 Lr-_ _L..-L1...L..L
il-LiCJ~!...Li._---'_.J.I--'_.L.J.II..JicJ,.J.I-'-!__.L_-'-il--'--'-_D_U_T_Y_CY_C_L_F,_D_-_tl_"_1_ _ _ _T_J_I,_kl_._TC_"_P_I'_kl_IJ_JC_lt_I_-,1
0001
~
I--
I '
1 .... 1'
_I
.;...-1"SINGLE PULSE I
001 , _
."-
01
VCEI"t) ,,, IcllB
lit
o
001
~Joolml
0.1
04
10
10
100
IB, BASE CURRENT ImA)
10
100
IC, COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-96
1000
BC337,-16,-25,-40, BC338,-16,-25,-40
FIGURE
1
6 - TEMPERATURE COEFFICIENTS
II
FIGURE 7 - CAPACITANCES
10 0
IIIII
IIIII
'vc lor VCE("t)
w
...,
z
i'!
::---..
C,b
10
G
;t:
j
'VB lor VBE
II
10
-r
...,'
I--'"
100
Cob
I
1
0.1
1000
IC. COLLECTOR CURRENT (rnA)
10
VR. REVERSE VOLTAGE (Volts)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-97
I
100
SC36S (NPN)
•
2 Collector
~()
MAXIMUM RATINGS
1 Emitter
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector- Emitter Voltage
VCES
25
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
BOO
6.4
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
2.75
22
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
SC369 (PNP)
,~~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
3
Max
Unit
Thermal Resistance, Junction to Case
Symbol
RHJC
45
°C/W
Thermal Resistance, Junction to Ambient
RHJC
156
°C/W
2 Collector
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mA, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 100 pA, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 pA, IC = 0)
V(BR)EBO
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 V,IC = 0)
lEBO
-
Vdc
25
-
-
Vdc
5.0
-
-
Vdc
-
-
10
1.0
pAde
mAde
-
10
pAde
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mAl
(VCE = 1.0 V,IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
hFE
-
-
tr
65
-
Collector-Emitter Saturation Voltage
(lC = 1.0 A. IB = 100 mAl
VCE(sat)
-
-
0.5
V
Base-Emitter On Voltage
(lC = 1.0 A, VeE = 1.0 V)
VBE(on)
-
-
1.0
V
Bandwidth Product
(lC = 10 mA, VCE
= 5.0 V, f
50
85
60
= 20 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-98
375
-
MHz
BC368 (NPN), BC369 (PNP)
FIGURE 1 - DC CURRENT GAIN
200
FIGURE 2 - COLLECTOR SATURATION REGION
10
- --
~ 100
~ 70
ox:
§;
g 04
VCE = 1 0 V
TJ = 25°C
50
:~
3
<>
u
11~1
W
~ 02
\l.ll
JlJ[ r-
a
001 002
FIGURE 3 - ON VOLTAGES
TJ = 25°C 11111
I!
I I
i III
VSE(SAT! @ lelle = 10
n--
~-
..
0
3
"
~\-
~
...
11
"
~
!\
,...1'Il I
•
TJ = 25°C
og
,::;
~'9'
flo...
t'-
r-
++I
0.05 0 1 0.2
0.5 1 0 2.0
5.0 10
18. BASE CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
10
..
3
!
0
::l
201~0--~2f.0~-L~~5~0~~1~0~0~~20~0--~~5~00~~1~0~00
"
o
'"
n-
I IIIUI
'""
,::;
n-
06
ox:
1
u
;
\
w
'"~
1
\
~ 08
....
'"
::l
\
g
20
50100
FIGURE 4 - TEMPERATURE COEFFICIENT
-0.8
I
~
:>
f-""
.§. -1 2
~
<3
I
~ -1 6
8
..
w
I
a:
i? -20
15
~
~
I
-24
i
~
<>
g:
~
z
~
Z
:;;:
'",.:.~
ox:
ox:
=>
FIGURE 6 - CAPACITANCE
TJ = 25°C
r-- -.
200
V
1---
~ 110
",/
<>
20
50 100 200 5001000
IC. COLLECTOR CURRENT (mAl
160
300
;::
i-""
OVB for VBE
I
w
u
z
b
~ 80
u
100
:
70
t--- f50 t--- f-
--
r---
t---
- - - . - - f--
~
VCE=10V
TJ = 25°C
1= 20 MHz
~
u
40
\
-_.
r-- r--r-- r---
'- t--
u
~
30
10
20
50
100
200
IC. COllECTOR CURRENT (mAl
500
~.
-- - -
Cibo
-
Cabo
r----
o
1000
Cabo
C,bo
50
10
10
15
20
30
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-99
20
40
25
50
BC372,-16,-25,-40
BC373,-16,-25,.40
•
MAXIMUM RATINGS
Symbol
BC
372
BC
373
Unit
Collector-Emitter Voltage
VCEO
Vdc
VCBO
lOa
lOa
80
Collector-Base Voltage
80
Vdc
Emitter-8ase Voltage
VEBO
12
IC
1.0
Adc
Rating
Collector Current - Continuous
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Vdc
Total Device Dissipation @TA
Derate above 25°C
=
25°C
PD
625
5.0
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mW;oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
3 Collector
~~
1 Emitter
THERMAL CHARACTERISTICS
I
Characteristic
1
Thermal Resistance, Junction to Ambient I
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA
=
Symbol
I
Max
RBJC
1
I
83.3
I
I
°C/W
I
I
200
I
°C/W
I
ReJC
Unit
HIGH VOLTAGE DARLINGTON
NPN SILICON
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
100
80
-
-
100
80
-
-
-
12
-
-
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'
(lc = lOa !lAde, IB = 0)
V(BR)CES
BC372
BC373
Collector-Base Breakdown Voltage
(IC = 100 !lAde, IE = 0)
,Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 80 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
ICBO
BC372
BC373
-
-
plain range
BC372, BC373-16
BC372, BC373-25
BC372, BC373-40
8.0
8.0
20
40
-
plain range
BC372, BC37.3-16
BC372, BC373-25
BC372, BC373-40
10
10
25
60
-
Emitter Cutoff Current
(VBE = 10 V, IC = 0)
lEBO
-
Vdc
V(BR)CBO
BC372
BC373
Vdc
Vdc
nAde
100
100
100
nAde
ON CHARACTERISTICS'
DC Current Gain
(lc = 250 mAde, VCE
(IC
=
= lOa mAde, VCE =
K
hFE
5.0 Vde)
5.0 Vde)
-
-
-
600
60
160
600
-
Collector-Emitter Saturation Voltage
(lC = 250 mAde, IB = 0.25 mAde)
VCE(sat)
-
1.0
1.1
Vde
Base-Emitter Saturation Voltage
(lC = 250 mAde, IB = 0.25 mAde)
VBE(sat)
-
1.4
2.0
Vde
fr
lOa
200
-
MHz
Cob
-
10
25
pF
NF
-
2.0
-
dB
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 100 mAde, VCE = 5.0 Vde, f
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
Noise Figure
(lC = 1.0 mAde, VCE
= 20 MHz)
1.0 MHz)
= 5.0 Vde,
RIl
=
100 kohm, F
=
1.0 kHz)
'Pulse Test: Pulse Width = 300 /Ls, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-100
BC372,-16,-25,-40, BC373,-16,.25,-40
FIGURE 2 - "SATURATION" AND "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
1,6
100 K
11
VCE - S V
1,4
N-Ll
z
V
u
o
~
1
w
G
.,./
JJ--::::::Y
VBE ON I ~CE
TA - 2SOC f--
~
VBE (satiICIiB - 100 J---I---
II
TA - 115oC'-
sV
I
1-J---I---
f-tt"(Sdfl IcllB - 100
0,6
0,4
./
0,2
1/ ./ V
o
IK
s
1000
100
10
1
500
FIGURE 4 - CAPACITAN.CES
FIGURE 3 - CURRENT GAIN BANDWIDTH PRODUCT
~1000
~
100
10
IC, COLLECTOR CURRENT (mAl
IC, COLLECTOR CURRENT (mAl
100
VCE
5V, TJ
25'C
to
=>
CJ
~
:;'"
§:
CJ
z
-
f..--
C,b
100
rc;= ~
u
r--~
«
'"
S
;g:
;;,
10
::;
'"-
~
G
£
10
0,6
1
10
100
600
10
01
VR, REVERSE VOLTAGE (VOLTSI
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-101
100
•
•
BC413,B,C
BC414,B,C
MAXIMUM RATINGS
Symbol
Rating
BC
413
BC
414
Unit
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Collector-Emitter Voltage
VeEO
30
45
Vdc
Collector-Base Voltage
VCBO
45
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAde
Collector Current - Continuous
1 Collector
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
350
2.B
mW
mW/oC
Total Device Dissipation @ Te
Derate above 25°C
= 25 DC
Po
1.0
B.O
TJ, Tstg
-55 to +150
Watt
mWjDC
DC
Operating and Storage Junction
Temperature Range
3 Emitter
THERMAL CHARACTERISTICS
LOW NOISE TRANSISTORS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Refer to BC549 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25 DC unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0) BC413
BC414
V(BR)CEO
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0) BC413
BC414
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 IlAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vdc, IE = 0, TA
Vde
30
45
Vde
45
50
Vde
5
ICBO
=+
15
5
125°C)
Emitter Cutoff Current
(VEB = 4 Vde, IC = 0)
nAde
IlAde
nAde
lEBO
15
ON CHARACTERISTICS
DC Current Gain
(lC = 10 IlAde, VCE
(IC
=2
mAde, VCE
= 5 Vdc)
=5
Vde)
hFE
BC413B/BC414B
BC413C/BC414C
BC413B/BC414B
BC413C/BC414C
BC413/BC414
100
100
1BO
380
180
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 10 mAde, IB = see note 1)
(lC = 100 mAde, IB = 5 mAde, see note 2)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 5 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 10 !lAde, VCE = 5 Vde)
(lC = 100 !lAde, VCE = 5 Vde)
(lc = 2 mAde, VCE = 5 Vde)
VBE(on)
150
270
290
500
350
460
800
800
0.075
0.3
0.25
0.25
0.6
0.6
Vde
Vde
1.1
Vde
0.55
0.52
0.55
0.62
0.75
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 10 mAde, VCE = 5 Vde, f = 100 MHz)
250
Collector-Base Capacitance
(VCE = 10 Vde, IE = 0, I = 1 MHz)
Noise Figure
(lC = 200 IlAde, VCE
I = 30 Hz - 15 KHz)
MHz
IT
pF
Cebo
2.5
NF
= 5 Vde,
Note1: IB IS value lor which IC
RS
=2
dB
KQ,
0.6
= 11 rnA at VCE = 1 V
2.5
Note 2: Pulse test = 300 !lS - Duty cycle = 2%
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-102
BC415,B,C
BC416,B,C
II
MAXIMUM RATINGS
Rating
CASE 29·04, STYLE 17
TO-92 (TO-226AA)
Symbol
BC
415
BC
416
Unit
Collector-Emitter Voltage
VCEO
35
45
Vdc
Collector-Base Voltage
VCBO
45
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
100
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
350
2.B
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
1.0
B.O
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
I
R~JC
125
°C/W
R~JC
357
°C/W
I
I
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
LOW NOISE TRANSISTORS
Cha racteristic
I
I Thermal Resistance, Junction to Case
I
I
I Thermal Resistance, Junction to Ambient I
PNP SILICON
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAdc,lB = 0) BC415
BC416
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 10 flAdc,lE = 0) BC415
BC416
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 flAdc, IC = 0)
V(BR)EBO
Vdc
35
45
Vdc
45
50
Vdc
5
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = + 125°C)
ICBO
Emitter Cutoff Current
(VEB = 4 Vdc, IC = 0)
lEBO
15
5
nAdc
flAdc
nAdc
15
ON CHARACTERISTICS
DC Current Gain
(lc = 10 flAde, VCE = 5 Vdc)
(IC = 2 mAde, VCE = 5 Vde)
hFE
BC415B/BC416B
BC41 5C/BC41 6C
BC415B/BC416B
BC415C/BC416C
BC415/BC416
100
100
ISO
3S0
120
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 0.5 mAde)
(lc = 10 mAde, IS·= see note I)
(lc = 100 mAde, IB = 5 mAde, see note 2)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 100 mAde, IB = 5 mAde)
VBE(sat)
Base-Emitter On Voltage
(IC = 10 flAde, VCE = 5 Vde)
(lc = 100 flAdc, VCE = 5 Vde)
(IC = 2 mAdc, VCE = 5 Vdc)
VBE(on)
150
270
290
500
350
460
SOO
SOO
Vdc
0.075
0.3
0.25
0.25
0.6
Vde
1.1
Vde
0.55
0.52
0.55
0.62
0.75
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 10 mAde, VCE = 5 Vde, f = 100 MHz)
250
Collector-Base Capacitance
(VCE = 10 Vdc, IE = 0, f = 1 MHz)
IS
pF
Ccbo
2.5
Noise Figure
(IC = 200 flAdc, VCE = 5 Vdc, RS = 2 KQ,
f=30Hz-15KHz)
Note 1: IB
MHz
fT
NF
dB
0.5
value for which IC = 11 mA at VCE = 1 V
2.0
Note 2: Pulse test = 300 flS - Duty cycle = 2%
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2·103
•
BC445,A
BC447,A,B
BC449,A,B
MAXIMUM RATINGS
Symbol
Rating
BC
BC
Unit
BC
445 447 449
80 100
Vdc
80 100
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Collector-Emitter Voltage
VCEO
60
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
300
mAdc
Collector Current - Continuous
1 Collector
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mW;oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance. Junction to Case
I
I
I Thermal Resistance, Junction to Ambient I
Symbol
RHJC
RHJC
I
I
I
Max
83.3
200
I
I
I
Unit
~~
3 Emitter
HIGH VOLTAGE TRANSISTORS
°C/W
NPN SILICON
°C/W
Refer to MPS8098 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
60
80
100
-
-
60
80
100
-
5.0
-
-
-
-
100
100
100
50
120
180
50
.100
160
50
60
90
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage"
(lC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !LA, IE = 0)
V(BR)CEO
BC445
BC447
BC449
Emitter-Base Breakdown Voltage
(IE = 10 !LAdc, IC = 0)
Collector Cutoff Current
(VeB =' 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VeB = 80 Vdc, IE = 0)
Vdc
V(BR)CBO
BC445
8C447
BC449
V(BR)EBO
ICBO
Be445
BC447
BC449
Vdc
Vdc
nAdc
-
ON CHARACTERISTICS'
DC Current Gain
(lC = 2.0 mA, VCE
hFE
=
5.0 V)
BC445/447/449
BC445A1447A1449A
BC447B/449B
(lc
=
10 rnA, VCE
=
5.0 V)
BC445/447/449
BC445A1447A1449A
BC447B/449B
(lc
= 100 mA, VCE =
5.0 V)
BC445/447/449
BC445A1447A1449A
BC447B/449B
Collector-Emitter Saturation Voltage
(lC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
-
0.1
Base-Emitter Saturation Voltage
(lC = 100 mAdc, IB = 10 mAdc)
VBE(sat)
-
0.85
Base-Emitter On Voltage
(lC = 2.0 rnA, VCE = 5.0 V)
(lc = 100 mA, VeE = 5.0 VI"
VBE(on)
-
-
-
0.25
-
Vdc
Vdc
Vdc
0.55
-
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 50 mAde, VeE = 5.0 Vdc, f = 100 MHzl
"Pulse Test: Pulse Width", 300 /LS, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-104
460
220
460
0.8
0.7
1.2
BC446,A,B
BC448,A,B
BC450,A,B
MAXIMUM RATINGS
Rating
Symbol
BC
BC
Unit
BC
446 448 450
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Collector-Emitter Voltage
VCEO
60
80 100
Vdc
Collector-Base Voltage
VCBO
60
BO 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
300
mAdc
mW
mW/oC
Collector Current - Continuous
1 Collector
~~
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5.0
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mWroC
TJ, Tstg
- 55 to +150
°c
Symbol
Max
Unit
HIGH VOLTAGE TRANSISTORS
Thermal Resistance, Junction to Case
RAJC
83.3
°C/W
PNPSILICON
Thermal ReSistance, Junction to Ambient
RHJC
200
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
3 Emitter
Refer to MPS8598 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage"
(lc = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 ,."A, IE = 0)
V(BR)CEO
BC446
BC448
BC450
60
80
100
60
80
100
Emitter-Base Breakdown Voltage
(IE = 10 ,.,.Adc, IC = 0)
V(BR)E80
Collector Cutoff Current
(VC8 = 40 Vdc, IE = 0)
(VC8 = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
IC80
8C446
8C448
8C450
-
-
-
-
Vdc
V(BR)CBO
BC446
BC448
BC450
Vdc
-
5.0
-
-
-
-
-
Vdc
nAdc
100
100
100
ON CHARACTERISTICS'
DC Current Gain
(lC = 2.0 rnA, VCE
hFE
= 5.0 V)
50
120
180
50
100
160
50
60
90
BC446/446/450
BC446A1448A1450A
BC446B/448B/450B
(lc
=
10 rnA, VCE
= 5.0 V)
BC446/448/450
BC446A1448A1450A
BC4468/448B/450B
(lc
=
100 rnA, VCE
=
5.0 V)
BC446/448/450
BC446A1448A1450A
BC4468/44BB/450B
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
(lc = 100 mAdc, IB = 10 mAdc)
VCE(sat)
-
0.125
8ase-Emitter Saturation Voltage
(lc = 100 mAdc, 18 = 10 mAde)
V8E(sat)
-
0.85
8ase-Emitter On Voltage
(lc = 2.0 rnA, VCE = 5.0 V)
(lc = 100 rnA, VCE = 5.0 V)"
V8E(on)
-
=
100 MHz)
"Pulse Test: Pulse Width", 300 ,.,,5, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-105
-
0.25
-
Vdc
Vdc
Vdc
0.55
DYNAMIC CHARACTERISTICS
Current-Gain-8andwidth Product
(lc = 50 mAde, VCE = 5.0 Vdc, f
460
220
460
0.76
0.7
1.2
•
•
BC485,A,B,L
BC487,A,B,L
BC489,A,B,L
MAXIMUM RATINGS
Rating
Symbol
Unit
BC BC BC
485 487 489
VCEO
45
Collector-Base Voltage
VCBO
45
Emitter-Base Voltage
VEBO
5.0
IC
1.0
Adc
Collector Current - Continuous
60
80
Vdc
60
BO
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Collector-Emitter Voltage
Vdc
, Collector
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @ T C
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mWjOC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
~-©
3 Emitter
THERMAL CHARACTERISTICS
I
I
Characteristic
I
I Thermal Resistance, Junction to Case
RHJC
I
I
83.3
RHJC
I
200
Symbol
I Thermal Resistance, Junction to Ambient I
Max
I
I
L
Unit
HIGH CURRENT TRANSISTORS
°C/W
NPN SILICON
°C/W
Refer to MPSA05 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
45
60
80
-
-
45
60
80
-
-
-
-
-
5.0
-
-
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage"
BC485
(IC = 10 mAdc,lB = 0)
BC487
BC489
V(BR)CEO
Collector-8ase Breakdown Voltage
BC485
(IC = 100 I'Adc,lE = 0).
BC487
BC489
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 I'Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
VCB = 30 Vdc - IE = 0
VCB = 40 Vdc - IE = 0
VCB = 60 Vdc - IE = 0
ICBO
BC485
BC487
BC489
-
-
Vdc
Vdc
Vdc
nAdc
-
-
100
100
100
ON CHARACTERISTICS'
DC Current Gain
(IC = 10 mAdc - VCE = 2.0 Vdc)
(Ic = 100 mAdc - VCE = 2.0 Vdc)
(IC
= 1 Adc
- VCE
hFE
BC4851487/489
BC485U487U489L
BC485A1487Al489A
BC485B/487B/489B
= 5.0 Vdc)"
40
60
60
100
160
15
Collector Emitter Saturation Voltage
(lc = 500 mAde - IB = 50 mAd c)
(lc = 1 Ade - IB = 100 mAde)
VCE(sat)
Base Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAde)
(lc = 1 Adc - 18 = 100 mAdc)"
VBE(sat)
120
160
260
400
150
250
400
Vdc
-
0.2
0.3
0.50
-
0.85
0.90
1.20
-
200
-
-
7
-
-
50
-
-
Vde
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 50 mAde, VCE = 2.0 Vdc, f
tr
= 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f = 1.0 MHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
Cob
Cib
1.0 MHz)
" Pulse test - Pulse wIdth = 300 I's - Duty Cycle 2 %.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-106
MHz
pF
pF
BC486,A,B,L
BC488,A,B,L
BC490,A,B,L
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
486 488 490
Unit
60
80
Vdc
60
80
Vdc
CASE 29-04. STYLE 17
TO-92 (TO-226AA)
Collector-Emitter Voltage
VCEO
45
Collector-Base Voltage
VCBO
45
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
1.0
Adc
Po
625
5.0
mWjOC
1.5
12
mWjOC
- 55 to +150
°c
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
1 Collector
""~()
mW
Watt
3 E.mltter
THERMAL CHARACTERISTICS
I
I
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I.
HIGH CURRENT TRANSISTORS
Max
Unit
RHJC
I
I
83.3
°C/W
RHJC
J
200
°C/W
Symbol
PNP SILICON
Refer to MPSA55 for graphs.
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(lc = 10 mAde, IB = 0)
8C486
BC488
BC490
V(BR)CEO
Collector-Base Breakdown Voltage
BC486
(lc = 100 "Adc, IE = 0)
BC488
BC490
V(BR)CBO
Emitter-Base Breakdown Voltage
liE = 10 ~Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
VC8 = 30 Vdc - IE = 0
VCB = 40 Vdc - IE = 0
VCB = 60 Vdc - IE = 0
ICBO
BC486
BC4B8
BC490
45
60
80
-
-
45
60
80
-
-
-
-
4.0
-
-
-
-
100
100
100
-
400
150
250
400
Vdc
Vdc
Vdc
nAdc
-
ON CHARACTERISTICS'
DC Current Gam
(lc = 10 mAdc - VCE = 2.0 Vdc)
(lc = 100 mAdc - VCE = 2.0 Vdc)
(Ie
= 1 Adc -
VCE
hFE
40
BC486/488/490
BC486U488U490L
BC486A1488A1490A
BC486B/488B/490B
= 50 Vdc)
60
60
100
160
15
Collector Emitter SaturatIOn Voltage
IIC = 500 mAdc - IB = 50 mAdc)
(lc = 1 Adc - IB = 100 mAdc)
VCElsat)
Base Emitter Saturation Voltage
(lc = 500 mAdc, IB = 50 mAdc)
(IC = 1 Adc - IB = 100 mAd c)
VBElsat)
100
140
260
Vdc
-
0.25
0.50
0.50
-
0.90
1.00
1.20
-
150
-
-
9
-
-
110
-
-
Vdc
DYNAMIC CHARACTERISTICS
Current-Gam-Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f
=
fT
100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f = 1.0 MHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f = 1.0 MHz)
• Pulse test - Pulse Width = 300
~s
Cob
Cib
- Duty Cycle 2 %.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-107
MHz
pF
pF
•
BC517,S
CASSE 29-04, STYLE 17
TO-92 ITO-226AA)
MAXIMUM RATINGS
Rating
Symbol
BC517
Unit
VCES
30
Vde
Collector-Base Voltage
VCB
40
Vde
Emitter-Base Voltage
VEB
10
Vdc
Collector Current - Continuous
IC
1.0
Ade
Total Power Dissipation
Derate above 25°C
TA = 25°C
PD
625
12
mW
mW/oC
Total Power Dissipation
Derate above 25°C
TC - 25°C
PD
1.5
12
Watts
mW;oC
TJ, Tstg
- 55 to +150
°c
Collector-Emitter Voltage
Operating and Storage Junction
Temperature Range
~()-
"
23
3 Emitter
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
I
I
Symbol
I
Rj)JC
R~JA
I
Max
I
Unit
J
200
L
I
°C/W
j
j
°C/W
I
I
83.3
DARLINGTON TRANSISTOR
NPN SILICON
Refer to 2N6426 for graphs.
I
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, VBE = 0)
V(BR)CES
30
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 !£Adc, IE = 0)
V(BR)CBO
40
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 nAdc, IC = 0)
V(BR)EBO
10
-
-
Vdc
-
-
500
5.0
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 V)
(VCE = 20 V)
ICES
BC517
BC517S
nA
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
-
100
nAdc
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
-
-
100
nAde
-
-
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 20 mAde, VCE = 2.0 V)
(lC = 180 mAde, VCE = 1.2 V)
hFE
30,000
33,000
BC517S
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 0.1 mAde)
VCE(sat)
-
8ase-Emitter On Voltage
(lC = 10 mAde, VCE = 5.0 Vde)
VBE(on)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
(lC = 10 mAde, VCE = 5.0 Vde, I
=
100 MHz)
(1) Pulse Test Pulse Width", 2.0%.
(2) IT = Ihfel e Itest
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
2-108
-
-
1.0
Vde
1.4
Vde
BC546,A,B
BC547,A,B,C
BC548,A,B,C
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
65
Collector-Base Voltage
VCBO
80
Emitter-Base Voltage
VEBO
Collector Current - Continuous
Unit
BC BC BC
546 547 548
45
30
Vdc
50
30
Vdc
6.0
Vdc
IC
100
mAdc
Total Device Dissipation @ T A
Derate above 25°C
= 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AAj
,I ~-~'''~'
23
3 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIiJC
83.3
°C/W
Thermal Resistance, Junction to Ambient
RflJC
200
°C/W
Characteristic
ELECTRICAL CHARACTERISTICS (TA
=
AMPLIFIER TRANSISTORS
NPN SILICON
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mA. IB = 0)
BC546
BC547
BC548
V(BR)CEO
65
45
30
Collector-Base Breakdown Voltage
(lc = 100 !LAdc)
BC546
BC547
BC548
V(BR)CBO
80
50
30
Emitter-Base Breakdown Voltage
(IE = 10 !LA, IC = 0)
BC546
BC547
BC548
V(BR)EBO
6.0
6.0
6.0
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125°C)
ICES
BC546
BC547
BC548
BC546/547/548
-
-
-
-
-
-
-
0.2
0.2
0.2
-
V
-
-
V
V
-
15
15
15
4.0
nA
/LA
ON CHARACTERISTICS
DC Current Gain
(lc = 10 !LA, VCE = 5.0 V)
(lc = 2.0 rnA, VCE = 5.0 V)
(lc = 100 mA, VCE = 5.0 V)
hFE
-
-
90
150
270
BC546
BC547
BC548
BC546A1547A1548A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
180
290
520
450
800
800
220
450
800
BC546A1547A1548A
BC546B/547B/548B
BC548C
-
120
180
300
-
-
0.09
0.2
0.3
0.25
0.6
0.6
-
0.7
-
Collector-Emitter Saturation Voltage
(lC = 10 rnA, IB = 0.5 rnA)
(lC = 100 rnA, IB = 5.0 rnA)
(lC = 10 rnA, IB = See Note 1)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 rnA, IB = 0.5 rnA)
VBE(sat)
Base-Emitter On Voltage
(lC = 2.0 rnA, VCE = 5.0 V)
(lc = 10 rnA. VCE = 5.0 V)
VBE(on)
NOTE 1: IB
IS
-
BC546A1547A1548A
BC546B/547B/548B
BC548C
1.0 V.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-109
V
V
-
=
-
-
V
-
0.55
value for which IC = 11 rnA at VCE
-
-
-
0.7
0.77
•
BC546,A,B, BC547,A,B,C, BC548,A,B,C
•
I
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
150
150
150
300
300
300
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 mA, VCE = 5.0 V, f = 100 MHz)
tr
BC546
BC547
BC548
Output Capacitance
(VCB ~ 10 V, IC ~ 0, f ~ 1.0 MHz)
Cobo
Input Capacitance
(VBE ~ 0.5 V, IC ~ 0, f ~ 1.0 MHz)
Cibo
Small-Signal Current Gain
(lC = 2.0 mA. VCE ~ 5.0 V, I ~ 1.0 kHz)
hie
BC546
BC547/548
BC546A1547Al54BA
BC546B/547B/548B
BC547C/548C
Noise Figure
(lc ~ 0.2 mAo VCE ~ 5.0 V, RS ~ 2 kohms,
I ~ 1.0 kHz, At ~ 200 Hz)
-
NF
BC546
BC547
BC548
MHz
-
1.7
4.5
pF
10
-
pF
-
125
125
125
240
450
220
330
600
500
900
260
500
900
-
2.0
2.0
2.0
10
10
10
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-110
-
-
dB
BC546,A,B, BC547,A,B,C, BC548,A,B,C
BC547/BC548
FIGURE 1 - NORMALIZED DC CURRENT GAIN
0
9 - rl. I,
i~o~ LJill
11
I Ilil
8
1
I I
l..J.-
..-r-r
vBElwl1 r~ lells ' 10
-
1
6
I-
•
~
0
'">
03
2
i
1
c
o1
I
i
02 03
Ie COLLECTOR CURRENT ImAdc)
,
,,
!
,
,
i
;
Ii
: I
I"'I
I i
!
I
I
,
21
I
i
I
I
, , ,
B
,
! I
Ic - ZO m,A'1
4
\
N.ll
I
i
; I:' \
II1II
iii I j I
i
iRJ
I
l'liii Ti
i
i' j'i:
i i !, :11:
1-.1 I i I i
UI
001
<;2
10
10
IS. BASE Cl!RREfH
!
•
u
u
20
>-
;;:
20
24
~
~
.,;
x>
I
10
r
400
~
30 0
~ 200
l,..-
"
I
i
100
~
80
o
. . . r-.
";;:
'">-z
............ .......
20
~
N
V
o
6.0 8010
100
I
>-
40
10
COllECTOR CURRENT (mAl
>u
:>
. I-
._,
10
02
2~oC_ t--
t'..... .......
0
04060810
10
=>
FIGURE 6 - CURRENT GAIN-BANDWIDTH PRODUCT
TA'
-
16
Ie,
C,b
~C ,,-
12
(nIA)
-....,....
J"-,
10 100
~
f--
U
~o
10 30
w
1
FIGURE 5 - CAPACITANCES
0
\ 070 I~
w
0
Ut-
20 30
11
0
,
1111
0
0\ 01 I0
I-'
Ie Ie = 1O
~
Ii' 1111
I! i I ill
l"f..,l' III
~
~
.§
I
I :
i
I
I
VCEfw!\
:>
i
I
I
I
.1
FIGURE 4 - BASE EMITTER TEMPERATURE COEFFICIENT
) I ~T~-250C.
Ie - 200 m'A\J :
i
Ilj}..
'I' , L I
i
I
: ! ! '~i;i
i I!! :~:
I
I III:
Ie lOrnA
I
: III
I
II
Ie CJLlECTOR CURRENT 'mAdel
FIGURE 3 - COLLECTOR SATURATION REGION
Ie:" 50 mA ~ IC-100mA
VBE ,,,1 @l VCE • 10 V
I
I,
~
~
0
•
FIGURE 2 - "SATURATION" AND "ON" VOLTAGES
VeE -10 v
i
JAC1SU~
0
1
40
~
30
G
20
O~
1
~
=-
40
01
10
2.0
30
~"7.0
10
Ie. COUECTOR CuRRENT (mAde)
VR. REVE5\SE VOL TAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-111
20
30
~
BC546,A,B, BC547,A,B,C, BC548,A,B,C
BC546
•
FIGURE 7 - DC CURRENT GAIN
FIGURE 8 - "ON" VOLTAGE
1.0
0
0
.
...
,
?~i~J
r-u-'-~U lL_
01
+
--I
02
.-
o~
>
D.•
,;
ill'
VCEI.I) .'CIIB· 10
05
100
10
Ie. COLLECTOR CURRENT (mAl
~
:;i!
20r--rn"mTn---n-'-TT~TIT----r-.-rTTrrrr-~
I
16r--
~
~
:::~
12
It II
_
IJHJJl:-'
lOrnA 20 mA
1111
I
50 mA
I
TA' 25 0 C
1~--~1~\~~~~--~-+-H+++H+---4
"\
r--~~~H--'--+-~~-H~~--~+-~++H+--~
~ 08r--~~t.~t---+-4-t+44+Hr--~~-H~~~~
I
o
....
..,j
0 4 ~H\+-j+tW---- --
8
~
>
\
\
'-
'I!
u
-I 0
r:,,/
u:
~ -1
8
'":::>
!<
--
'va FOR VBE
~
t;
TA = 25°C
f:VCE - 5 V
:::>
0
~
0
II"
'I::
10
20
50
10
'111
50
20
,...'
r
I
,
z
I
;li 100
z
;;:
0
'"
....
I
50
~
B 20
Cob
50
200
TA-25 0 C
I :
200
i<
0
,...
100
500
...."0
r---. .....Cob
20
,
FIGURE 12 - CURRENT GAIN-BANDWIDTH PRODUCT
FIGURE 11 - CAPACITANCE
10
"::
(,!I
IC. COLLECTOR CURRENT (mAl
0
05
11 ;
moc
I
05
'B. BASE CURRENT (mAl
02
-55 0 C TO
II
~
~Ii
V
'"
~1J~~lUl14::~~~~~~==?;:tJ;Ct~l-----=:J.
005
01
02
05
1.0
20
50
10
20
r--
,
-2 2
0.02
0
-
a
w
0';;
I
0
200
II
.... -I 4
~
U
~ -2 6
.,;
JI
\..
100
">
E
I II
200 mA
III100 mA
50
20
5.0
10
20
IC. COLLECTOR CURRENT (mA)
FIGURE 10 - BASE EMITTER TEMPERATURE COEFFICIENT
FIGURE 9 - COLLECTOR SATURATION REGION
~
--
2
Ill,
I
I
10
10
tffi
,
I
III
~VBE" VCE· 5.0 V
c
,
~+j
III
~ 0.6
r-r.
"
I
~
Y8EI ..,)" lell8" 10
~
I
1111
I I 1111
OJ
_.
"
TA· noc
TA - 25 oC_
VCE - 5 V
1i11't-10
20
.t
50
100
I
0
I
I
10
VR. REVERSE VOLTAGE (VOLTS)
50
10
50
100
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-112
I
i
BC549,A,B,C
BC550,B,C
•
MAXIMUM RATINGS
Symbol
BC
549
BC
550
Unit
Collector-Emitter Voltage
VCEO
30
45
Vdc
Collector-Base Voltage
VCBO
30
50
Vdc
Emitter-Base Voltage
VEBO
Rating
Collector Current - Continuous
5.0
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
IC
100
mAdc
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mW;oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mW/oC
TJ,Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
LOW NOISE TRANSISTORS
I
Symbol
Max
I
Unit
I
I
RHJC
83.3
RHJC
200
I
I
°C/W
NPN SILICON
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) BC549
BC550
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 10 flAdc, IE = 0) BC549
BC550
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 flAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA
Vdc
30
45
Vdc
30
50
Vdc
5
ICBO
=+
15
5
125°C)
Emitter Cutoff Current
(VEB = 4 Vdc, IC = 0)
nAdc
flAdc
nAdc
lEBO
15
ON CHARACTERISTICS
DC Current Gain
(lc = 10 flAdc, VCE
=5
hFE
Vdc)
(lc = 2 mAdc, VCE = 5 Vdc)
BC549B/550B
BC549C/550C
BC549A
BC549B/550B
BC549C/550C
BC549/550
100
100
110
200
420
110
Collector-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 0.5 mAdc)
(lc = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5 mAdc, see note 2)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 100 mAdc, IB = 5 mAdc)
VBE(sat)
Base-Emitter On Voltage
(IC = 10 flAdc, VCE = 5 Vdc)
(IC = 100 IlAdc, VCE = 5 Vdc)
(lc = 2 mAdc, VCE = 5 Vdc)
VBE(on)
150
270
290
500
220
450
800
800
0.075
0.3
0.25
0.25
0.6
06
Vdc
Vdc
1.1
Vdc
0.55
0.52
0.55
0.62
0.7
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 10 mAdc, VCE = 5 Vdc, I = 100 MHz)
250
Collector-Base Capacitance
(VCE
=
Notel: IB
10 Vdc, IE
IS
= 0, I =
value lor which IC
MHz
IT
pF
Ccbo
2.5
1 MHz)
= 11
mA at VCE
=1V
Note 2: Pulse test
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-113
= 300
fls - Duty cycle
= 2%
BC549,A,B,C, BC550,B,C
•
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Small-Signal Current Gain
(lc = 2.0 mAde, VCE = 5.0 V, I = 1.0 kHz)
Min
BC549/BC550
BC549B/BC550B
BC549C/BC550C
Noise Figure
(lC = 200 pAde, VCE = 5.0 Vde, RS = 2.0 kG, f = 30 Hz-15 kHz)
(lc = 200 pAde, VCE = 5.0 Vde, RS = 100 kG, I = 1.0 kHz)
125
240
450
-
-
---,
I
I
Ideal
Transistor
I
L _______ ~-.J
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-114
Max
Unit
330
600
900
500
900
dB
NFl
NF2
FIGURE 1 - TRANSISTOR NOISE MODEL
,--
Typ
-
hie
0.6
-
2.5
10
BC549,A,B,C, BC550,B,C
FIGURE 2 -
NORMALIZED DC CURRENT GAIN
10
lWWv_
z
;:;: 15
....'"
~
'"
B
'-'
"
~
::;
FIGURE 3 -
TA
I
10
-s
08
~
.
o. 6
0.6
"''"
~
o. 5
\
~ 0.4
:t
03
-
>'
\
O. 3
O. 1
0.5
10
10
50
10
10
50
100
ill .
J1
100
0.1
0.5
FIGURE 5 -
CURRENT-GAIN BANDWIDTH PRODUCT
100
80
~
I
z
;:;:
'"
~
V
'-- .......
VCE -10 V _
TA
15 0C=
~
c:::
10
50
100
CAPACITANCE
...... ,--C,b
50
"''-'z
r---
1.0
10
~ 300
'"
b
10
IC, COLLECTOR CURRENT ImAdei
~ 400
~
i.-"
10
VCElsatl" IcJlS
0
FIGURE 4 -
<=>
VBEloo) c, VCE = 10 V
§! 0 4
IC, COLLECTOR CURRENT ImAdei
::>
r----
JB~I~:i(; IICIlB _1'0
O. 1
0.1
01
•
.... ",
1I1111
9O.8
o. 7
"SATURATION" AND "ON" VOLTAGES
+A=115Io~ 1111
O.
~150C
,,: 0.3
i1j
o
t-
o. 7
~ o. 6
"::>
..
II II III
VaE(.,,) .'cJIS • 10
~
~ 0.1
o
~::;
~ ~5olc
0.2
03
VCE(.,) .lcJla - 10
~
1
0.2
0.5
1.0
2.0
5.0
10
50
20
200
100
Jill
o
0.2
02 03 0.5 01 1.0
01
IC. COllECTOR CURRENT (mAde)
FIGURE 3 - COLLECTOR SATURATION REGION
2.0
It ~ 10mA
III U
IIIII
11111
IC
~
20mA
IC
~
SOmA
~
- 5S°C 10 + 125°C
100 rnA
~
f-""
200 rnA
I
11-
0
1\
1\
0.1
15"C
\
\IC
0.Q2
~
t-"
1'1
8
1\
1.0
10
20
-
'" 5. 0
<>
Z
FIGURE 6 - CURRENT GAIN-BANDWIDTH PRODUCT
,i! 400
Cob
..............
<
5
:: 3.0
~
t;
0
0
TA=250 C_
-... ........
t-....
200
...'"
150
i0
100
~
80
z
60
~
~
40
~
20
0.5
z
Cob
.0
2.0
t-
0
4.0
6.0 S.O 10
,
-
r-......
0.6 O.S 1.0
....
1
300
::>
~
1.0
0.4
100
IC, COLLECTOR CURRENT (rnA)
FIGURE 5 - CAPACITANCES
7.0
10
1.0
0.2
'B. BASE CURRENT (mAl
0
50 70 1110
20 30
2
IC
0
5.0 7.0 10
FIGURE 4 - BASE EM)TTER TEMPERATURE COEFFICIENT
TA~
2
1\
20 l.O
IC. COLLECTOR CURRENT (mAde)
20
30
;;:
.a
40
VR. REVERSE VOLTAGE (VOLTS)
~
V
I
VCE-l0V t---tTA"25"C
I-"'"
30
1.0
2.0
l.O
50
10
IC, COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-118
20
30
50
BC556,A,B, BC557,A,B,C, BC558,A,B,C
BC556
FIGURE 8 - "ON" VOLTAGE
FIGURE 7 - DC CURRENT GAIN
5V
VCE
c
~
25°C
TA
j
~~
I
I'
z
ia
0.2 H-t-f-ttttt--+-t+rnl-Ht-+-+1-+++++I-/-7""1
t- VCE(sa!) @ Ic/la 10
~ 0.2
1.0 2.0
0.1 0.2
5.0
10
20
50
O.L-~~~~~-L~~~~~-L~~~~
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
IC, COLLECTOR CURRENT (mA)
100 200
IC, COLLECTOR CURRENT (AMP)
FIGURE 10 - BASE EMITTER TEMPERATURE COEFFICIENT
FIGURE 9 - COLLECTOR SATURATION REGION
2.0
!::;
0
1.6
1111
1111
20 mA
IC=10 mA
'"~
iii
.r:
0
-1.0
II
II
~
it::'!i
\
1111
100 mA
50mA
.s -1.4
200 mA
~
t;
TJ
0.02
-
\.
25°C
0.05
0.1
0.2
0.5
1.0
2.0
IB' BASE CURRENT (mA)
1"-
r-
10
5.0
~ -2.6
~
-3.0
20
U
~
VCE
~
2.0
5.0
10
20
5V
t; 500
=>
-r-.
0
0
Cib
IE
200
b
f-
:I:
"-
10
8.0
6.0
4.0
!
2.0
0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
100
z
:;;:
50
i-"
I-
~
I'NJ.
I I r---
~
z
;a
'"
Cob
0.1
1.0
50
100
FIGURE 12 - CURRENT GAIN-BANDWIDTH PRODUCT
TJ = 25°C
r- r20
§
0.5
0.2
FIGURE 11 - CAPACITANCE
r-
55°C TO 125°C
-2.2
Ic, COLLECTOR CURRENT (mA)
40
~
i-"i-"
~
IiVB FOR VSE
~
:;
1\
I\..
o
8
~
F
~
\
~
~ -1.8
\
\
\
\
5u 0.4
z
~
lL
3;
u
0.8
~
J
G
III
1.2
~
VSE @ VCE = 5.0 V
:>
g
>
r--:t~VSbEg(S~al~)@~IC~/IS~=~10El~~~--==t~:1:r!ttut=~
1-ITi
-
§; 0.4 t-H-+-rtttt---+--+-++-+++++--+-+-+++++++----4
_ 0.5
0
~
IIll1
0.61=
~
!::;
I
~ 1.0
w
TJ = 25°C'tt
0.8 t-1-+++tttc--t-t-+-l-+ttt+--+-++-±.......'flf-"'"--:::>o"""I
:lj
~ 2.0
~
I !It--I--t--H-+ttttt--+-+-+++++++------::l
1.0
=>
'"
u
---
20
20
E
50
1.0
100
10
100
IC, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-119
200
11
BC556,A,B, BC557,A,B,C, BC558,A,B,C
FIGURE 13 - THERMAL RESPONSE
•
1.0
0.7
0.5
~D 0.5
f--- 0.2
;;:J, ~i 0.3
ffi :;J.. 0.2 k ~
::.;> r;..
"'::;;
0.1 0.05
I--'0
"
1
~ ~ O. 1
~ ~ 0.07
~ ~ 0.05
::;;t>!
-
.-
-
~}1~~~S~ f-'
- -
HUl
I kl
SINGLE PULSE
~~
? 00'
"" ~ 0.03
0.02
Duly Cycle, D = 11112
---ZOJCIII - rill ROJC
ROJC = 83.3'C/WMax
- - -ZOJAltl = rltl ROJA
ROJA = 200'C/W Max
DCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT tl
TJlpkl - TC = Plpkl ROJCIII
0.01
0.1
0.5
0.2
2.0
1.0
10
5.0
20
100
50
200
1.0 k
500
2.0 k
5.0 k
10 k
t, TlMElmsl
FIGURE 14 -
200
",
ACTIVE REGION SAFE OPERATING AREA
,
'"
100
TA= 25°C
-
~
'"=>
u
u
"~
10
7
6
06
5
"z
i
---
1\
f--:::: -I:-:VBElonl
05
10
1Q
50
10
20
50
VCElsat)
100
0
01
200
02
05
~
=>
"
~
'"
b
§
10
20
50
100
CAPACITANCE
4UO
300
70
200
~
100
SO
V
CE -10 V _
A
25 0 C=
1"---.. . .
~
1===
;:
--
50
co
u
z
U
I
40
j
i-
50
10
60
'">~
'"
13
20
FIGURE 4 -
CURRENT-GAIN BANDWIDTH PRODUCT
~
~
z
<1
10
.-
ICIIB - 10
IC, COLLECTOR CURRENT ImAdel
Ie, COlL ECTOR CURRENT ImAdel
FIGURE 3 -
VCE: 10V
2
1
02
02
t
..... V
~
IIICIlB -110
3
\
03
VB~I:a~11
4
\
04
o~ 11111
1 111111
98
08
:;
i
"SATURATION" AND "ON" VOLTAGES
A :1251
lJEUWv_
TA ~ 250e
15
N
"
~
0
30
---
~
u'
0
20
A=25 0C _
......... C,"
--
f'..
. . . . . r-.
~
0
05
07
10
20
50
70
10
10
04
50
20
06
10
Ie, COLLECTOR CURRENT ImAdel
--
0
20
r--
BASE SPREADING RESISTANCE
--
--..........
!'-......
0
"
VCE=10V
= , 0 KHz
t
TA =25 O C
0
0
12 0
01
40
10
VR, REVERSE VOLTAGE IVoltsl
FIGURE 5 -
170
02
05
10
20
50
10
IC, COLLECTOR CURRENT ImAdel
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-122
-
--
20
r40
BC617
BC61S
MAXIMUM RATINGS
Rating
Symbol
BC
617
BC
618
Unit
Collector-Emitter Voltage
VCEO
40
55
Vdc
Collector-Base Voltage
VCBO
50
80
Vdc
Emitter-Base Voltage
VEBO
Collector Current - Continuous
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
Vdc
12
~-EQ
IC
1.0
Adc
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
625
5.0
mIN
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Symbol
Max
Unit
DARLINGTON TRANSISTORS
Thermal Resistance, Junction to Case
RBJC
83.3
°C/W
NPN SILICON
Thermal Resistance, Junction to Ambient
RBJC
200
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise
3 Emitter
Refer to 2N6426 for graphs.
noted.)
Characteristic
I
Symbol
Min
Typ
Max
40
55
-
-
-
50
80
-
12
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, VBE = 0)
Vde
V(BR)CEO
8C617
BC618
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
BC61l
BCS18
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Both Types
Collector Cutoff Cu rrent
(VCE = 40 Vde, VBE = 0)
(VCE = SO Vdc, VBE = 0)
BC61l
BC618
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
BC61l
BC618
V(BR)EBO
ICES
lEBO
-
-
VCE(sat)
-
VBE(sat)
-
ICBO
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 0)
Both Types
-
Vde
Vdc
nAdc
50
50
nAdc
50
50
50
nAdc
-
1.1
Vdc
-
I.S
Vdc
-
-
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(lC = 200 mA. IB = 0.2 mAl
Both Types
Base-Emitter Saturation Voltage
(lC = 200 mA. IB = 0.2 mAl
Both Types
Current Gain
(lC = 100 pA, VCE = 5.0 V)
hFE
4000
2000
10000
4000
20000
10000
10000
4000
BCSll
BCS18
BCSll
BC618
BCSll
BCS18
BCS17
BC618
(lc = 10 mA. VCE = 5.0 V)
(lc = 200 mA, VCE = 5.0 V)
(lc = 1.0 A. VCE = 5.0 V)
-
-
-
-
70000
50000
-
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 500 mA, VCE = 5.0 V. P = 100 MHz)
t,.
150
-
-
MHz
Both Types
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
-
4.5
7.0
pF
Input Capacitance
(VEB = 5.0 V, IE = 0, f = 1.0 MHz)
Cib
-
5.0
9.0
pF
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-123
•
II
Unit
BC635
BC637
BC639
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
635 637 639
Collector-Emitter Voltage
VCEO
45
Collector-Base Voltage
VCBO
45
Em itter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Collector Current - Continuous
60
80
Vdc
60
80
Vdc
2 Collector
Total Device Dissipation @T A
Derate above 25°C
~
25°C
Po
800
6.4
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
2.75
22
Watt
mW;oC
TJ. Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
.!()
, Emitter
Symbol
Max
Unit
HIGH CURRENT TRANSISTORS
Thermal ReSistance, JunctJOn to Case
RHJC
45
°C/W
NPN SILICON
Thermal Resistance. JunctIOn to Ambient
RHJC
156
°C/W
Characteristic
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage"
(lC ~ 10 mAde. IB = 0)
Collector-Base Breakdown Voltage
(lC = lOa ",Adc, IE = 0)
BC63S
BC637
BC639
V(BR)EBO
ICBO
=
125°C)
-
45
60
80
-
45
60
80
-
5.0
-
-
-
25
40
40
40
25
-
-
Vdc
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 ",Adc, IC ~ 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0,
(VCB = 30 Vdc, IE = 0, TA
Vdc
V(BR)CEO
BC635
BC637
8C639
-
100
10
Vdc
nAdc
,..Adc
ON CHARACTERISTICS'
DC Current Gain
(lC = 5.0 mAdc, VCE
(lC = 150 mAdc, VCE
-
hFE
= 2.0 Vdc)
= 2.0 Vdc)
BC63S
BC637
BC639
-
Collector-Emitter Saturation Voltage
(lC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
-
-
Base-Emitter On Voltage
(lC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
-
fT
(lC
= 500 mA, VCE =
2.0 V)
250
160
160
0.5
Vdc
-
1.0
Vdc
-
200
-
MHz
Cob
-
7.0
-
pF
Cib
-
50
-
pF
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 50 mAdc, VCE = 2.0 Vdc, f
=
lOa MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
1.0 MHz)
'Pulse Test: Pulse Width", 300 "'s, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-124
BC635,BC637,BC639
FIG. 1 -
ACTIVE REGION SAFE OPERATING AREA
FIG. 2 500
1000
500
..
I
VCE
SOA.1S
-...!~~
..........
_ 200
E.
DC CURRENT GAIN
100
p
TC
Z5°c ..........
............. f--'"
t'--
r-.......
t-...
200
'\.
~
z
~
,=PDTA 25°C
50
~ 20
10
..........
PDTC 25°C
..... v
V
II
=2 V
!.---f--'"
I---"
I'\.
1\
........
o
'-'
BC635
BC637
BC639
1
3
4
5
20
10
30 40 50
70
100
10
VCE COLLECTOR EM:TTER VOLTAGE (VOLTS)
JO
IC COllECTOR
FIG. 3 -
FIG. 4 -
~ 100
111111
1I1III
VBE,., ., IC/IB
0.8
~li:
Iv
:z
"SATURATION" AND "ON" VOLTAGES
II II
II
or
~ 300
~
(mAl
CURRENT GAIN BANDWIDTH PRODUCT
500
or
300 500 1000
100
50
CURRENT
I
VBE on at VCE
_
nl
I
i-':::
=10
!
=2 V
06
II\VCE=2V
;:,
:z
~
50
I
VCEsal at IC/IB =10
o
..:: 20,
1
100
10
Ie
10
1000
IC . COLLECTOR CURRENT (mAl
COLLECTOR CURRENT ImA I
FIG. 5 -
TEMPERATURE COEFFICIENTS
-11 2
....'"
as
u
-1.0
i
II
VCE'Z VOLTS
..IT 'OoCTO·lO ·C
6
-2.2
1
/'
-
/
ev FOR VBE
I-5
10
f-100
30
50
100
300 500
1000
Ie COLLECTOR CliRRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-125
1000
•
BC636
BC638
BC640
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
636 638 640
Unit
Collector-Emitter Voltage
VCEO
45
Collector-Base Voltage
VCBO
45
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Collector Current - Continuous
60
80
Vdc
60
80
Vdc
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
2 Collector
Total Device Dissipation @TA
Derate above 25°C
=
25°C
PD
800
6.4
mW
mWjOC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
2.75
22
Watt
mWjOC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
~~
1 Emitter
HIGH CURRENT TRANSISTORS
Characteristic
PNP SILICON
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
45
60
80
-
-
45
60
80
-
5.0
-
-
-
-
100
10
25
40
40
40
25
-
-
-
-
0.25
0.5
0.5
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
IIc = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage
IIc = 100 /LAde, IE = 0)
BC636
BC638
BC640
VIBR)EBO
ICBO
=
125°C)
-
Vdc
VIBR)CBO
Emitter-Base Breakdown Voltage
liE = 10 /LAde, IC = 0)
Collector Cutoff Current
IVCB = 30 Vdc, IE = 0,
IVCB = 30 Vdc, IE = 0, TA
Vdc
VIBR)CEO
BC636
BC638
BC640
Vdc
nAdc
/L Adc
ON CHARACTERISTICS'
DC Current Gain
IIc = 5.0 mAdc, VCE = 2.0 Vdc)
IIc = 150 mAde, VCE = 2.0 Vdc)
IIc
= 500
rnA. VCE
-
hFE
BC636
BC638
BC640
= 2.0 V)
250
160
160
-
Collector-Emitter Saturation Voltage
IIc = 500 mAde, IB = 50 mAde)
VCElsat)
Vdc
Base-Emitter On Voltage
IIc = 500 mAde, VCE = 2.0 Vdc)
VBElon)
-
-
1,0
Vdc
for
-
150
-
MHz
Cob
-
9.0
-
pF
Cib
-
110
-
pF
-
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
IIc = 50 mAdc, VCE = 2.0 Vdc, f
=
100 MHz)
Output Capacitance
IVCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
IVBE = 0.5 Vdc, IC
= 0, f =
1.0 MHz)
*Pulse Test: Pulse Width", 300 /LS, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-126
BC636,BC638,BC640
FIG.1 -
ACTIVE REGION SAFE OPERATING AREA
FIG. 2 SOD
1000
SOD
SOA
.........
_ 200
""
.5
10D
TA-2SoC
........
200
z
z
~
i
50
~
............
~ 20
.......
"./
'-'
00
00
u
3
4
5
'0
20
"-
50
.....
30 40 50
"t
70
II I
II I
100
VCE COLLECTOR EMiTTER VOLTAGE (VOLTS)
10
30
50
100
CURRENT GAIN BANDWIDTH PRODUCT
FIG. 4 -
"SATURATION" AND "ON" VOLTAGES
500
I IIII
'"
~ 300
~
VSE.al at IC/IS - 10
.-
VeE on at VCE = 2 V
'"
'\
~
~
I IIII
0.8
,......
z
300 500 1000
[mAl
IC COlLECTOR CURRENT
FIG. 3 -
1\
l't
VCE -2 VOLTS
BC636
BC638
BC640
,
I\.
V ..:r.~
V
'00
,0
~
II
~~
25°C
.........
~
~
II
VCE = 2 V
IS
'" I"-
C- 2SoC
i'
DC CURRENT GAIN
100
06
VC[ = 2 V
;;;
z
~
50
VCE,at at IC/IS=IO
,
a
.:: 20,
'0
1000
'00
10
IC . COLLECTOR CURRENT (mAl
IC COLLECTOR CURRENT (rnA)
FIG. 5 -
TEMPERATURE COEFFICIENTS
-n2
u
~
>
.~
~
i:5
u
~
-, a
IJ
8
VCE'2 VOLTS
Ii!
~
V
..IT, OoC TO -10 ·C
=>
-1.6
~
-2.2
1
/I
./
~
~
-
9, FOR VBE
f3510
~
100
3050
100
JOO 500
1000
Ie COLLECTOR CliRRENT IrnA I
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-127
1000
BC650,C,CS,S
BC651,C,CS,S
MAXIMUM RATINGS
II
Symbol
BC650
Series
BC651
Series
Unit
Collector-Emitter Voltage
VCEO
30
45
Vdc
Collector-Base Voltage
VCBO
30
Emitter-Base Voltage
VEBO
Rating
Collector Current -
Continuous
45
Vdc
6.0
Vdc
IC
200
mAde
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
625
5.0
mW
mWI"C
Total Device Dissipetion @ TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mWI"C
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Symbol
Max
Unit
LOW NOISE AUDIO
TRANSISTORS
Thermal Resistance, Junction to Case
ROJC
83.3
°CIW
NPN SILICON
Thermal Resistance, Junction to Ambient
ROJC
200
°CIW
THERMAL CHARACTERISTICS
Characteristic
Refer to MPSA 18 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
BC650
BC651
V(BR)CEO
30
45
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
BC650
BC651
V(BR)CBO
30
45
-
-
Vdc
Vdc
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
0.Q15
p.A
Collector-Emitter Leakage Current
(VCE = 60 V)
ICES
-
0.025
p.A
Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)
lEBO
-
0.Q15
pA
380
380
1400
820
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mAde, VCE
=
-
hFE
BC650, S/BC651, S
BC650, C, CS/BC651, C, CS
5.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 100 mAde, IB = 5.0 mAde)
VCE(sat)
Base Emitter On Voltage
(lC = 2.0 mAde, VCE = 5.0 Vde)
VBE(on)
0.55
0.7
Vde
hfe
380
1600
-
Output Capacitance (VCB
Cob
-
3.0
Input Capacitance (VEB
Cib
-
8.0
pF
fy
100
700
MHz
Vde
-
0.2
0.6
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 5.0 Vde, f
1.0 kHz)
= 10 Vdc, IE = 0, f = 1.0 MHz)
= 0.5 Vdc, IC = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 V, f
Noise Figure
(VCE = 5.0 V, IC
=
=
pF
100 MHz)
NF
= 0.2 mA, RS = 2.0 kG, f =
1.0 kHz, TA = 25°C)
BC650, C, BC651, C
BC650S,CS, BC651S,CS
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-128
dB
-
2.8
2.0
BCXS8,.7,-8,-9,-10
BCXS9,-7,.8,.9,-10
MAXIMUM RATINGS
Symbol
BCX
58
BCX
59
Unit
Collector-Emitter Voltage
VCEO
32
45
Vdc
Collector-Base Voltage
VCBO
32
45
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
100
mAde
Rating
Collector Current - Continuous
II
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
~"()
Total Device Dissipation @ T A
Derate above 25°C
~
25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Symbol
Max
Unit
AMPLIFIER TRANSISTORS
Thermal Resistance, Junction to Case
RHJC
83.3
°C/W
NPN SILICON
Thermal Resistance, Junction to Ambient
RHJC
200
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
(TA ~ 25'C unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
I
3 Emitter
I
Characteristic
Symbol
Min
Typ
Max
32
45
-
7.0
8.7
-
-
10
10
20
20
2.5
2.5
-
20
20
40
75
100
120
180
250
380
80
120
160
240
80
145
220
300
170
250
350
500
190
260
380
550
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC ~ 10 mAde, IB ~ 0)
Emitter-Base Breakdown Voltage
(IE ~ 1.0 !lAde, IC ~ 0)
Collector Cutoff Current
(VCE ~ 32 V)
(VCE ~ 45 V)
(VCE ~ 32 V, TA ~ 100'C, VBE
(VCE ~ 45 V, TA ~ 100'C, VBE
(VCE ~ 32 V, TA ~ 125'C)
(VCE ~ 45 V, TA ~ 125'C)
All
~
~
Vdc
V(BR)CEO
BCX58
BCX59
0.2 V)
0.2 V)
V(BR)EBO
BCX58
BCX59
BCX58
BCX59
BCX58
BCX59
ICES
ICES
ICEX
ICEX
ICES
ICES
Emitter-Cutoff Current
(VEBO ~ 4.0 V, IC ~ 0)
lEBO
-
-
-
Vdc
nAde
!lAde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 !LAde, VCE
5.0 Vde)
(lC ~ 2.0 mAde, VCE ~ 5.0 Vdc)
(lc
(lC
~
~
-
hFE
~
10 mAde, VCE
100 mAde, VCE
~
~
1.0 Vde)
2.0 Vdc)
BCX58-7, BCX59-7
BCX58-8, BCX59-8
BCX58-9, BCX59-9
BCX58-10, BCX59-10
BCX58-7, BCX59-7
BCX58-8, BCX59-8
BCX58-9, BCX59-9
BCX58-10, BCX59-10
BCX58-7, BCX59-7
BCX58-8, BCX59-8
BCX58-9, BCX59-9
BCX58-10, BCX59-10
BCX58-7, BCX59-7
BCX58-8, BCX59-8
BCX58-9, BCX59-9
BCX58-10, BCX59-10
40
-
-
220
310
460
630
400
630
1000
-
45
60
60
-
-
-
Collector-Emitter Saturation Voltage
(lC ~ 100 mAde, IB ~ 5.0 mAde)
VCE(sat)
-
-
0.5
Vde
Base-Emitter Saturation Voltage
(Ie ~ 100 mA, IB ~ 2.5 mAde)
VBE(sat)
-
-
1.0
Vde
Base-Emitter On Voltage
(lC ~ 2.0 mAde, VCE ~ 5.0 Vdc)
VBE(on)
-
0.7
Vde
0.55
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-129
BCX58,-7,-8,-9,-10, BCX59,-7,-8,-9,-1 0
ELECTRICAL CHARACTERISTICS
•
(continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
fy
125
250
-
MHz
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 10 mAde, VCE = 5.0 V, f = 100 MHz)
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
Cob
-
1.S
4.5
pF
Input Capacitance
(VBE = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
-
5.2
15
pF
125
175
250
350
-
250
350
500
700
-
1.0
6.0
150
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
-
hfe
BCX5S-7, BCX59-7
BCX5S-S, BCX59-S
BCX5S-9, BCX59-9
BCX5S-10, BCX59-10
Noise Figure
(lC = 0.2 mAde, VCE = 5.0 Vdc, RS = 2.0 kohrns, f = 1.0 kHz)
NF
dB
(lC = 10 rnA, IBl = 1.0 rnA, IB2 = 1.0 rnA)
(VBB = 3.6 V, R1 = R2 = 5.0 kG)
(RL = 999 ohms)
Td
Tr
Ton
-
16
29
45
'See test circuit
Ts
Tf
Toff
-
475
40
515
(lC = 100 rnA, IBl = 10 rnA, IB2 = 10 rnA)
(VBB = 5.0 V, Rl = 500 G, R2 = 700 0)
(Rl = 98 ohrns)
td
tr
ton
*See test circuit
ts
tf
toff
-VBB
-
-
TR <5ns
-~
~
.. l11J4935
RJ~ soU
V
001
<
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-130
800
-
150
135
80
215
800
+10VIVCC)
t r <5ns
ZB>100KU
ns
-
5.0
40
45
to OSCIlloscope
son
-
-
ns
BCX58,-7,-8,-9,-10, BCX59,-7,-8,-9,-10
FIGURE 1 - NORMALIZED DC CURRENT GAIN
FIGURE 2 - "SATURATION" AND "ON" VOLTAGES
10
300
~~~E : 2~:C
9f--
I--T1• I. i50lC
I I
I I
1111
1111
8
"0
"
06
~
O~
!:i
o
04
>-
03
2:
-
I-
VBElonl
2
VCE(satl
(0.0
1
100
10
01
200
020)
FIGURE 3 - COLLECTOR SATURATION REGION
200m~
to
::
4
'"
1
~
o
~
8
20)0
1010100
12
,........ ..-
u:
TA-25 0 C
w
'"
=>
\.
8
~
..
"-
\'C - 50 rnA
\
IC
I C - 20 mA
-14
'".,; ·-28
~
I'!-.ll
>
10mA
~
01
001
...-......
w
' \ IC -100mA
6
04
10
0"3 0
01
10
100
IC. COLLECTOR CURRENT (mAdel
lB. BASE CURRENT (mAde)
FiGURE 6 - CURRENT-GAiN-BANDWIDTH PRODUCT
FIGURE 5 - CAPACITANCES
400
0
I
~
)00
t;
0
=>
TA·25 OC - '---
~ ZOO
-r--.
-
--
0
04
I
r--...
060810
20
'"
40
~
100
~
80
..~
f'.,
V
o
t--- Cob
0
..... r-
..
C,b
0
0
I
101010
+ 125 oc
2 -20
>~ 02
20)0
~ --16
o
'"w
-55 oC to
u
w
'J
Ie Ie - I~
FIGURE 4 - BASE-EMITTER TEMPERATURE COEFFICiENT
-08
IC -
1
010110
10 V
Ie. COLLECTOR CURRENT (mAdel
lC. COLLECTOR CURRENT (mAde)
i!
(~VeE ~
I IIII
o
1
01
II
f-'
..-
BEI .. ,I@ICII8· 10
7
VCE
'0 v
TA
)50[
20
)0
f-
0
~
I'-..
60 8010
VR. REVERSE VOLTAGE (Volts)
........
...........
20
-
'"
40
)0
=>
u
.t'
40
20
0\
01
10
20
) 0
\ J 10
10
IC. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-131
\0
BCI78,-7,-8,-9,-10
BCI79,-7,-8,-9,-10
•
MAXIMUM RATINGS
Rating
Symbol
BCX
BCX
78
79
Collector-Emitter Voltage
VCEO
32
45
Vdc
Collector-Base Voltage
VCBO
32
45
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAdc
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
I
Svmbol
Max
Unit
Thermal Resistance, Junction to Case
RHJC
83.3
°C/W
Thermal Resistance, Junction to Ambient
RHJC
200
°C/W
ELECTRICAL CHARACTERISTICS (TA
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Unit
3 Emitter
AMPLIFIER TRANSISTORS
PNP SILICON
= 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
32
45
-
-
5.0
6.8
-
-
-
20
40
75
100
120
lBO
250
3BO
80
120
160
240
40
45
60
60
140
200
270
340
170
250
350
500
180
260
360
500
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAdc, IB = 0)
V(BR)CEO
BCX78
BCX79
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
All
Collector Cutoff Current
(VCE = 32 V)
(VCE = 45 V)
(VCE = 32 V, TA = 100'C, VBE = 0.2 V)
(VCE = 45 V, TA = 100'C, VBE = 0.2 V)
(VCE = 32 V, TA = 125'C)
(VCE = 45 V, TA = 125'C)
V(BR)EBO
BCX78
BCX79
BCX7B
BCX79
BCX7B
BCX79
ICES
ICES
ICEX
ICEX
ICES
ICES
Emitter-Cutoff Current
(VEBO = 4.0 V, IC = 0)
lEBO
-
10
10
20
20
2.5
2.5
20
Vdc
Vdc
nAdc
pAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 10 pAdc, VCE = 5.0 Vdc)
(lc = 2.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lc = 100 mAde, VCE = 2.0 Vde)
hFE
BCX7B-7, BCX79-7
. BCX7B-8, BCX79-B
BCX7B-9, BCX79-9
BCX78-10, BCX79-10
BCX7B-7, BCX79-7
BCX78-B, BCX79-B
BCX7B-9, BCX79-9
BCX7B-l0, BCX79-10
BCX7B-7, BCX79-7
BCX7B-8, BCX79-B
BCX78-9, BCX79-9
BCX7B-l0, BCX79-10
BCX7B-7, BCX79-7
BCX7B-B, BCX79-8
BCX7B-9, BCX79-9
BCX78-10, BCX79-10
-
-
-
-
220
310
460
630
-
400
630
1000
-
Collector-Emitter Saturation Voltage
(lc = 100 mAde, IB = 5.0 mAdc)
VCE(sat)
-
-
Base-Emitter Saturation Voltage
(lc = 100 mA, IB = 5.0 mAde)
VBE(sat)
-
-
1.0
Vde
Base-Emitter On Voltage
(lc = 2.0 mAde, VCE = 5.0 Vdc)
VBE(on)
0.55
-
0.7
Vde
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
2·132
-
0.6
Vdc
BCX78,-7,-8,-9,-10, BCX79,-7,-8,-9,-1 0
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
tr
-
200
-
MHz
Cob
-
2.6
4.5
pF
Cib
-
8.5
15
pF
125
175
250
350
200
260
330
520
250
350
500
700
-
1.0
6.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC ~ 10 mAde, VCE ~ 5.0 V, f
Output Capacitance
(VCE ~ 10 Vdc, IC
Input Capacitance
(VBE ~ 0.5 V, IC
~
~
~
0, f
0, f
~
~
1.0 MHz)
1.0 MHz)
Small-Signal Current Gain
(lC ~ 2.0 mAde, VCE ~ 5.0 Vdc, f
Noise Figure
(lC ~ 0.2 mAde, VCE
100 MHz)
-
hfe
~
1.0 kHz)
BCX78-7, BCX79-7
BCX78-8, BCX79-8
BCX78-9, BCX79-9
BCX78-10, BCX79-10
NF
~
5.0 Vdc, RQ = 2.0 kohms, f
=
dB
1.0 kHz)
(lc = 10 mA, IBl ~ 1.0 mA, IB2 = 1.0 mAl
(VBe = 3.6 V, Rl = R2 = 5.0 kO)
(RL = 999 ohms)
Td
Tr
Ton
*See test ci reu it
Ts
Tf
Toff
-
17
27
-
44
150
-
400
60
460
800
5.0
20
25
150
-
(lC = 100 mA, lel = 10 mA, le2 = 10 mAl
(Vee = 5.0 V, Rl = 500 n, R2 = 700 0)
(Rl = 98 ohms)
td
tr
ton
-
*See test circuit
ts
tf
toff
-
-
-
130
40
170
TEST CIRCUIT
+VBB
-10V(VCCI
to oscilloscope
TR 100Krl
nS
-
-
-
800
ns
II
BCX78,-7,-8,-9,-10, BCX79,-7,-e,-9,-10
FIGURE 1 - NORMALIZED DC CURRENT GAIN
FIGURE 2 - "SATURATION" AND "ON" VOLTAGES
1.0
•
0.9
~
f--
iA~~50~
I I II III
-
VaElal) .It/la • 10
0.8
~ 01
2 0.6
....
'"
~
.....
I-'
...... 1-'"
VIE (0.) • VCE' 10 V
o.~
04
>
>' O.l
02
VCElal) !'It/la' 10
I-"
01
01
o
100 200
10
01
0203050/10
IC. COLLECTOR CURRENT (rnA)
FIGURE 3 - COLLECTOR SATURATION REGION
4
III
Id ~ lio rnA
IC- lamiA
?:
w
to
~
I II
Ie-lOti mAl
I II
Ic-50mA
=
w
::
4
.,;,
1
~
o
g o.
~
8
~O
il
~
>
]-12
r--I C - 200 rnA
sa
70100
II II
-550C to + 125 0C
\
....-
"'
8-20
~
"'::>co
\
I-
~-24
"\
'"
~-28
.,;
10
01
2
01
10
lB. BASE CURRENT (rnA)
-
0
0
"
0
FIGURE 6 - CURRENT GA1N·BANDWIDTH PRODUCT
-..
TA'2~oC_ I--
. . . . i'--"
0
060810
V
......
~
Va-IOV
--
-f-
TA'~
Cob
i"--..
0
100
Ie. COLLECTOR CURRENT (rnA)
FIGURE 5 - CAPACITANCES
0
04
20 30
z>-
? ~3
a
0.01
10
10
~ -16
1\
o. 4
8
'-'
o
I I III
1\
\
6
~O/O
FIGURE 4 - BASE EMITTER TEMPERATURE COEFFICIENT
o
> 16
20 lO
IC. COLLECTOR CURRENT (mAde)
40608Ql0
r20
JO
0
10
40
VR. REVERSE VOLTAGE (VOLTSI
20
lO
50
10
IC. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-134
20
30
BOBOtA
Thru
BOBOtO
MAXIMUM RATINGS
Rating
Symbol BOB BOB BOB BOB
01A 01B 01C 010
Unit
Collector-Emitter Voltage
VCEO
45
60
80 100
Vdc
Collector-Base Voltage
VCES
45
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.5
Adc
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
2.5
20
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
~~
1 Emitter
ONE WATT
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance, Junction to Case
Max
Unit
AMPLIFIER TRANSISTORS
RHJC
50
°C/W
NPN SILICON
RHJC
125
°C/W
Symbol
I Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
(lc = 10 mA. IB = 0)
BDB01A
BDB01B
BDB01C
BDB01D
V(BR)CEO
45
60
80
100
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
Vdc
ICBO
BDB01A
BDB01B
BDB01C
BDB01D
Emitter Cutoff Current
(lc = 0, VEB = 5.0 V)
0.1
0.1
0.1
0.1
~Adc
100
nAdc
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mA, VCE
(IC = 500 mA, VCE
hFE
= 1 V)
= 2 Vi
40
25
Collector-Emitter Saturation Voltage
(lc = 1000 mA, IB = 100 mAl
VCE(sat)
Collector-Emitter on Voltage
(lc = 1000 rnA. VCE = 1 V)
VBE(on)
400
0.7
Vdc
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain BandWidth Product
(lc = 200 rnA, VCE = 5 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f
=
fT
50
MHz
Cob
1 MHz)
30
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-135
pF
•
FIGURE 1 - D.C. CURRENT GAIN
BDB01A Thru BDB01 0
400
I
-- -TJ.1250C
•
.
'"
z
200
>-
..-
--
~
~
B
g
;
100
80
60
0.7
~
1.0
2: 0.8
mA
w
'"
~
>
f-"
f-.--
~-
~
~~
-
.............
30
50
I
500mA-
0.8
~
II
1111
II
1111
~
02
0
0.05
0.1
-
\
J
I I .11111
VBElon)@ VCE • 1 0 V
0.4
:>
i'
r-
r-.....
VCElsatl@ ICIIB '10
Ii 11111
1---_
0.2
0.5
1.0
2.0
5.0
lB. BASE CURRENT (mA)
FIGURE 4 - BASE-EMITTER
TEMPERATURE COEffiCIENT
10
-
0.2
-..
0
0.5
20
10
20
50
10
20
50
IC. COLLECTOR CURRENT ImA)
100
200
500
FIGURE 5 - CAPACITANCE
80
60
i--
40
~
C,bo
~
/
U -16
~
~
w
u
./
z
-20
I-
~
~ I-
'">-:::>
20
'">u
0VB tor VBE
5
u'
-2.4
~
TJ' 25°C
"-
>-
I"-
10
80
6.0
>-
Cobo-
.,;
~
I-I--
>
U
> -12
~
500
300
c
'1.
w
200
:tttm=- .....
06
w
0.4
100
VBElsatl@ICIIB'10
2:
'"'"
!:;
70
FIGURE 3 - ON VOLTAGES
~;
I I
11~~A- 2~0~1
-0.8
8
R~
.......
c
c
'-'
~
--
~ -55°C
I
VCE '1.0V
-~
0.6
«
c
~
~
--e---
25°C
10
I~IJ 10 mA 5~
c
'"
~
r--
5.0)0
10
20
30
IC. COLLECTOR CURRENT ImAI
FIGURE 2 - COLLECTOR SATURATION REGION
1.0
I
1111
1111
1.1 250C
T/= 2510 C
1.0
'"
-
~
40
0.5
!:;
c
>
~--
I--
-2.8
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT ImA)
100
200
40
0.1
500
FIGURE 6 - CURRENT GAIN·BANDWIDTH PRODUCT
N50
10
05
1.0
2.0
VR. REVERSE VOLTAGE IVOLTS)
02
20
FIGURE 7 - ACTIVE REGION-SAFE OPERATING AREA
300
I
::a::
~
t;
:::>
II
200 '- VCE' 2.0 V
TJ'250C
....
-
\
c
c
f
::a::
....
c
~
100
V
~~ lk~~~~~~~~~~~~~~~~~I~OO~~~'~~
\
_
~,
0
~
0
t;
t:
30
2.0
TC=25°C'
u
500
::§ 2001-- TA= 25 0c ....
z
Ii;W
Duty Cycle';; 10%
1_ 2kr:=+::~=+~~=++444::=h;+~~~~4=~~
t"
",,10m,'
3.0
50
5.0 ) 0 to
20
30
IC. COLLECTOR CURRENT ImA)
)0 100
10
200
2.0
5.0
10
20
45 60 80100
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
2·136
BDB02A
Thru
Rating
Symbol BOB BOB BOB BOB
02A 02B 02C 020
Unit
Collector-Emitter Voltage
VCEO
45
60
80 100
Vdc
Collector-Base Voltage
VCES
45
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Collector Current - Continuous
IC
0.5
Adc
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
2.5
20
Watt
mW/oC
TJ, Tstg
-55to+150
°C
Dperating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
Vdc
3 Collector
":~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
•
BDB02D
MAXIMUM RATINGS
ONE WATT
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RHJC
50
°C/W
Thermal Resistance, Junction to Ambient
RHJC
125
°C/W
AMPLIFIER TRANSISTORS
PNPSILICON
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
(IC = lOrnA, IB = 0)
BDB02A
BDB02B
BDB02C
BDB02D
V(BR)CEO
45
60
80
100
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
Vdc
ICBO
BDB02A
BDB02B
BDB02C
BDB02D
Emitter Cutoff Current
(lc = 0, VEB = 5.0 V)
0.1
0.1
0.1
01
).LAdc
100
nAdc
lEBO
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1 V)
(lc = 500 rnA, VCE = 2 Vi
hFE
40
25
Collector-Emitter Saturation Voltage
(lc = 1000 mA. IB = 100 mAl
VCE(sat)
Collector-Emllter on Voltage
(IC = 1000 rnA. VCE = 1 V)
VBE(on)
400
0.7
Vdc
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain BandWidth Product
(IC = 200 rnA. VCE = 5 V, I = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, I
=
IT
50
MHz
Cob
30
1 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-137
pF
BDB02A Thru BDB02D
FIGURE 1 - D.C. CURRENT GAIN
" 400
I
--
TJ~1250C
•
z
;;: 200
250e
...'"
~
a:
a:
a
-550e
2:
100
;
80
VC~ ~ LOV
...........
~
'~ \.
-~
~
0
40
0"5
LO
07
30
2"0
10
70
20
30
IC. COLLECTOR CURRENT ImAI
5"0
50
FIGURE 2 - COLLECTOR SATURATION REGION
0
VBEI,.tl@ IC'IB
0" 6
>
a:
Ic~10mA-
~~
SOmA
\
l00mA ~
0.4
0
3
2
a
~
>
500 mA
1\
u'
0"5
:z:
t.O
2"0
5"0
10
20
50
IC. COLLECTOR CURRENT ImAI
III
200 I-- VCE ~ 2"0 V
TJ ~ 25°C
100
200
0
01
500
\
o
f
.. 2k
~
~
\
0510
20
50
10
VR. REVERSE VOLTAGE IVOLTSI
r--
100
"-
~I
0
G
0
~ 50
i::> 500
u
~ 200 -
TA
=25°C .....
.....
de
-
Current limit
Thermal Limit
20
a:
30
2"0
3"0
50
5.0 7"0 10
20 30
IC. COLLECTOR CURRENT ImAI
70 tOO
50
100
10
LO
200
S.cond IBrerk~0'f'1 limit
2JJ
1001"
"X
i'-; o-dc
=
-- BDB02A
BDB02B
BDB02C
BDB02D
50
10
20
45 60 BO 100
VCE. COLLECTOR·EMIITER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-138
1/10 m,
C =25°C ,,10,
~ 100
o
Z
20
Duty Cycl."; 10%
lk
...:z:co
V
02
FIGURE 7 - ACTIVE REGION-SAFE OPERATING AREA
....-
o
E
'"
Cobo
.......
10
FIGURE 6 - CURRENT GAIN·BANDWIDTH PRODUCT
~
250 e
0
300
::>
TJ
r---
~-a
~
500
"-
-2.4
t;
200
.......
,..-
...~
~
-
0VB tor VBE
~ -2.0
::>
1
50
10
20
50
100
Ie. COLLECTOR CURRENT ImAI
,C,bo
../'
o
L>
2"0
70
Q -1.6
~
10
@ ICIIB I~I 10,
FIGURE 5 - CAPACITANCE
-12
~
-
02~~---+-++44+~--4-4-~HtH---~~~
100
...z~
~
E±:j:j:j:I:'!=V:=:BE~lor-n-I le9~==1F1itri~ttI.v~~~:~~~~::~~:~~~:~:~~
VCEI .. "
L>
~
@t1v
0"6
;'"
-O"B
3;
~I-"
10
~
>
;>
--
.....
5"0
10
0"5
LO
2"0
lB. BASE CURRENT ImAI
FIGURE 4 - BASE·EMITTER
TEMPERATURE COEFFICIENT
0"1
~
-l-l-±:I::I:m~-
o
.\
t'---....
500
o81-+WI+----I--1---LI-l-lulll-4--l-\-+-+++t-H:b--"'f-f---::?H
w
'"
~
o
300
200
~~ 'l 25 c+--If--"H'-+++"It-'--t--+-f++-l-Ht--t--t--t:;t
LO
TJ~250C
~ 0.8
100
FIGURE 3 - ON VOLTAGES
LO
'"~
70
BDC01A
Thru
Unit
BDC01D
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
MAXIMUM RATINGS
Symbol BOC BOC BOC BOC
01A 01B 01C 010
Rating
Collector-Emitter Voltage
VCEO
45
60
80
100
Vdc
Collector-Base Voltage
VCBO
45
60
80
100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.5
Adc
Collector Current - Continuous
Total Device Dissipation @T A
~
25°C
Po
1.0
8.0
Watt
mW/oC
~
25°C
Po
2.5
20
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Derate above 25°C
Total Device Dissipation @ TC
Derate above 25°C
Operating and Storage Junction
Temperature Range
2 Collector
~~
1 Emitter
ONE WATT
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
I
I
Characteristic
Symbol
I
R/jJC
I
I
I Thermal Resistance, Junction to Case I
I Thermal Resistance, Junction to Ambient I
R/jJC
Max
50
125
I
I
I
Unit
°C/W
NPN SILICON
°C/W
Refer to BOBO 1 A for graphs.
ELECTRICAL CHARACTERISTICS (T A
~ 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emiller Voltage
(fc ~ 10 mA, IB ~ 0)
BOCOIA
BOCOIB
BOCOIC
BOC010
Collector
(VCB ~
(VCB ~
(VCB ~
(VCB ~
V(BR)CEO
45
60
80
100
Cutoff Current
45 V, IE ~ 0)
60 V, IE ~ 0)
80 V, IE ~ 0)
100 V, IE ~ 0)
Vdc
ICBO
BOCOIA
BOCOIB
BOCOIC
BOC010
Emitter Cutoff Current
(IC ~ 0, VEB ~ 5.0 V)
0.1
0.1
0.1
0.1
f!Adc
100
nAdc
lEBO
ON CHARACTERISTICS
DC Current Gain
(IC ~ 100 mA, VCE
(lc ~ 500 mA, VCE
hFE
~
1 V)
2 V)
~
40
25
Collector-Emiller Saturation Voltage
(lc ~ 1000 mA, IB ~ 100 mAl
VCE(sat)
Collector-Emitter on Voltage
VBE(on)
(IC
~
1000 mA, VCE
~
1 V)
400
0.7
Vdc
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC ~ 200 mA, VCE ~ 5 V, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 V, IE ~ 0, f
fT
50
MHz
Cob
~
1 MHz)
30
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-139
pF
•
BDC02A
•
Thru
BDC02D
MAXIMUM RATINGS
Rating
Symbol BDC BDC BDC BDC
02A 02B 02C 020
Unit
Collector-Emitter Voltage
VCEO
45
60
80 100
Vdc
Collector-Base Voltage
VCBO
45
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc·
Collector Current - Continuous
IC
1.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
8.0
Watt
mW/oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
2.5
20
Watt
mWrC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-03. STYLE 14
TO-92 (TO-226AE)
2 Collector
.!.()
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RHJC
50
°C/W
Thermal Resistance, Junction to Ambient
RHJC
125
°C/W
ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to BDB02A for graphs.
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
(lc = 10 mA, IB = 0)
BDC02A
BDC02B
BDC02C
BDC02D
V(BR)CEO
45
60
80
100
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = D)
ICBO
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
lEBO
Vdc
0.1
0.1
0.1
0.1
flAdc
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 100 mA, VCE = 1 V)
(IC = 500 mA. VCE = 2 V)
hFE
40
25
Collector-Emitter Saturation Voltage
(lc = 1000 rnA, IB = 100 rnA)
VCE(sat)
Collector-Emitter on Voltage
(lc = 1000 rnA, VCE = 1 V)
VBE(on)
400
0.7
Vdc
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 200 rnA, VCE = 5 V, f = 100 MHz)
fT
50
Output Capacitance
(VCB = 10V,IE =O,f= 1 MHz)
MHz
Cob
30
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-140
pF
BDCOS
BDC07
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
MAXIMUM RATINGS
Rating
BDC
Unit
Symbol
BDC
05
07
Collector-Emitter Voltage
VCEO
300
250
Vdc
Collector-Base Voltage
VCBO
300
250
Vdc
VEBO
5.0
Collector Current - Continuous
IC
500
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
1
8.0
Watt
mW/oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
50
Watt
mW;oC
TJ, Tstg
- 55 to +150
°c
Emitter-Base Voltage
Operating and Storage Junction
Temperature Range
Vdc
2 Collector
.:.-EQ
1 EmItter
THERMAL CHARACTERISTICS
RIIJC
I
I
Max
Thermal Resistance, Junction to Case
50
I
I
°C/W
I
I
Thermal Resistance, Junction to Ambient
ROJC
I
125
I
°C/W
I
Characteristic
Symbol
Unit
HIGH VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPSW42 for graphs,
ELECTRICAL CHARACTERISTICS ITA
= 25°C unless otherwise noted)
Symbol
Characteristic
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 11)
IIc = 1 mAde, IB = 0)
Collector-Base Breakdown Voltage
IIc = 100 f!Adc, IE = 0)
Vdc
VIBR)CEO
BDC05
BDC07
300
250
-
300
250
-
5.0
5.0
-
Vdc
VIBR)CBO
BDC05
BDC07
Emitter-Base Breakdown Voltage
liE = 100 f!Adc, IC = 0)
Vdc
VIBR)EBO
BDC05
BDC07
Collector Cutoff Current
IVCB = 200 Vdc, 'E = 0)
f!Adc
ICBO
BDC05
BDC07
Emitter Cutoff Current
IVBE = 5.0 Vdc, IC = 0)
0.01
~dc
lEBO
10
BDC05
BDC07
-
ON CHARACTERISTICS
DC Current Gain
Ilc = 25 mAde, VCE = 20 Vdc)
hFE
BDC05
BDC07
40
50
Collector-Emitter Saturation Voltage
IIc = 20 mAde, IB = 2.0 mAde)
VCElsat)
Base-Emitter Saturation Voltage
IIc = 20 mA. IB = 2.0 mAl
VBElsat)
-
-
-
Vdc
2
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
IIc = 10 mAde, VCE = 10 Vdc, I = 50 MHz)
IT
60
Collector-Base Capacitance
IVCB = 30 Vdc, IE = 0, I = 1.0 MHz)
-
pF
Cre
2.8
11) Pulse Test: Pulse Width;;;; 300 f!S, Duty Cycle;;;; 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-141
MHz
•
•
BDC06
BDCOS
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
MAXIMUM RATINGS
Unit
Symbol
BDC
06
08
Collector-Emitter Voltage
VCEO
300
250
Vdc
Collector-Base Voltage
VCBO
300
250
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
500
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
1
B.O
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
2.5
20
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Symbol
Max
Unit
Rating
Operating and Storage Junction
Temperature Range
BDC
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
R8JC
50
°C/W
Thermal Resistance, Junction to Ambient
ReJC
125
°C/W
2 Collector
":~
1 Emitter
HIGH VOLTAGE TRANSISTORS
PNPSILICON
Refer to M PSW92 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(IC = 1 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 ).LAde, IE = 0)
Vdc
V(BR)CEO.
BDC06
BDCOS
300
250
Vdc
V(BR)CBO
BDC06
BDCOS
Emitter-Base Breakdown Voltage
(IE = 100 ).LAdc,IC = 0)
300
250
Vdc
V(BR)EBO
BDC06
BDCOS
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
5.0
5.0
).LAdc
ICBO
BDC06
BDCOS
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
-
0.01
).LAde
lEBO
BDC06
BDCOS
-
10
ON CHARACTERISTICS
DC Current Gain
(lc = 25 rnA, VCE
hFE
= 20 Vdc)
BDC06
BDCOS
40
50
Collector-Emitter Saturation Voltage
(lc = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 20 rnA, IB = 2.0 rnA)
VBE(sat)
-
-
-
Vdc
2
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(IC = '0 mAdc, VCE = 10 Vdc, f
IT
= 50 MHz)
60
Collector-Base Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
-
pF
Cre
2.8
(1) Pulse Test: Pulse Width;;;; 300 ~s, Duty Cycle;;;; 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-142
MHz
BF199
•
CASE 29-04. STYLE 21
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAdc
Total Device Dissipation @ TA
Derate above 25°C
Collector Current - Continuous
= 25°C
Po
350
2.B
mW
mW/oC
Total Device Dissipation @ T C
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mW;oC
TJ, Tstg
- 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
2 Emitter
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
RHJC
125
°C/W
Thermal Resistance, Junction to Ambient
RHJC
357
°C/W
RF TRANSISTOR
NPN SILICON
Refer to BF240 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1 mAdc, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 j.LAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 j.LAdc, IC = 0)
V(BR)EBO
Vdc
25
Vdc
40
Vdc
4
Collector Cutoff Cu·rrent
(VCB = 20 Vdc, IE = 0)
nAdc
ICBO
100
ON CHARACTERISTICS
DC Current Gain
(lc = 7 mAdc, VCE = 10 Vdc)
hFE
Base-Emitter On Voltage
(lc = 7 mAdc, VCE = 10 Vdc)
VBE(on)
40
85
mVdc
770
900
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (2)
(lc = 5 mAdc, VCE = 10 Vdc, f = 100 MHz)
MHz
fT
400
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cre
Noise Figure
(lc = 4 mA, VCE = 10 V, RS = 50 Q, f = 35 MHz)
Nf
750
pF
0.25
dB
2.5
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-143
0.35
BF224
•
CASE 29-04, STYLE 21
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
50
mAde
Rating
Collector Current - Continuous
1 Collector
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
350
2.8
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
3-r?\
Bas~
2 Emitter
THERMAL CHARACTERISTICS
RF TRANSISTOR
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIiJC
125
°C/W
Thermal Resistance, Junction to Ambient
ReJC
357
°C/W
Characteristic
NPN SILICON
Refer to BF240 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 1 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc" 100 ~Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 ~Adc, IC = 0)
V(BR)EBO
Vdc
30
Vdc
45
Vdc
4
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
TA = 25°C
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
100
nAdc
nAdc
lEBO
100
ON CHARACTERISTICS
DC Current Gain
(lC = 7 mAde, VCE = 10 Vdc)
hFE
Base-Emitter On Voltage
(lc = 7 mAde, VCE = 10 Vdc)
VBE(on)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
30
mVdc
0.77
0.9
Vdc
0.15
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
300
Common Emitter Feedback Capacitance
(VCE = 10 Vdc, IE = 0, 1= 1 MHz)
Cre
Noise Figure
(lc = 1.0 mAde, VCE
NI
= 10 Vdc,
MHz
IT
(lc = 1.5 mAde, VCE = 10 Vdc, I = 100 MHz)
(lc = 7 mAde, VCE = 10 Vdc, I = 100 MHz)
600
850
pF
0.28
RS = 50 ohms, I = 100 MHz)
1= 200 MHz
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-144
dB
2.5
3.5
BF240
BF241
CASE 29·04, STYLE 21
TO·92 (TO·226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
25
mAdc
Total Device Dissipation @TA
Derate above 25°C
Collector Current - Continuous
= 25°C
PD
350
2.8
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
.~()'-
"
23
THERMAL CHARACTERISTICS
2 Emitter
AM/FM TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 1 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 I'Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 I'Adc, IC = 0)
V(BR)EBO
VrI,
40
Vdc
40
Vdc
4
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
nAdc
ICBO
100
ON CHARACTERISTICS
DC Current Gain
(lc = 1 mAdc, VCE
=
-
hFE
BF240
BF241
10 Vdc)
Base-Emitter On Voltage
(lc = 1.0 mAdc, VCE = 10 Vdc)
65
35
220
125
Vdc
VBE(on)
0.65
0.70
0.74
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(lc = 1.0 mAde, VCE = 10 Vdc, f
=
100 MHz)
BF240
BF241
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
tr
Cre
(1) Pulse test: Pulse Width;:;:; 300 I's. Duty cycle;:;:; 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-145
MHz
600
470
pF
0.28
0.34
•
BF240, BF241
FIGURE 1 - CURRENT GAIN·BANDWIDTH PRODUCT
•
FIGURE 2 - CAPACITANCES
~ 1000
10
,. 700 =VCE-l0V
-TA -250C
g
500
o
f 300
:....
200
%
t;
3:
BF240
BF241
~
~
./.
'"z
~ 100
«
I-
:i:
;;:
~<..>
...
to
U
U
;a
~
2
C,b
<..>
1
Cob
07
O. 5
04
03
'-
r--
2
20
ere' IE - 0
::>
II
<..>
.it 0
0.2 03
10
0.50.7 1
0.1
100
20
10
0.5
0.2
20
VR. REVERSE VOLTAGE (VOLTSI
IC. COLLECTOR CURRENT (mAl
FIGURE 3 - DC CURRENT GAIN
FIGURE 4 - blle
100
VCE-l0V
TA - 250C
50
~ VCE - 10V
z
;;:
200
to
,;.
0
~
a: 100
::>
<..>
<..>
m:~=
0
0
o
10
E
5
..-
W
~ ..
~
30
2
0
0
01
-
--
100 MHz
e--
1~
0.2 0.3
2
0.50.7 1
3
5 7 10
20
30
20
- --
45 MHz107 MHz
bl1e 470 KHz " 02 mmhos
40
50
6.0
70
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
FIGURE 6 - b22e (boa)
FIGURE 5 - b2l.
-100
-50
~
2000
100MHz-
f: VCE - 10 V
-20
E -to V
L'
.....-
/
/'
E
.....-
./
2
1/
- --
10V
~
t
10.7 MHz
45 MHz
200
100
,/'
/'
100 MHz
VCE
500
...... i--45MHz
~
-5
1000
107MHz
50
b21 •• at ~70 KHz < 0j5 mmhos
470 KHz
20
IC. COLLECTOR CURRENT (mAl
MOTOROLA
IC. COLLECTOR CURRENT (mAl
SMALL-SIGN~L
2-146
SEMICONDUCTORS
=
80
BF240, BF241
FIGURE 7 - gll. (gi.1
200
f:: VCE
10V-
100 MHz
-- -
VCE=IOV
lOa
45~
./
/
.-J., 7MHzr---
!----
50
1 -----
~
-
= 047 1045 MH
470 KHz
~i-
E
E
--
FIGURE 8 - g21. (Yf.1
10
~
~
E
20
10
05
5
0.2
a1
2a
2
3a
40
5U
60
7U
80
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
FIGURE 9 - g22a (_I
200
- VCE = 10V
100 MHz
lOa
-
50
45 MHz
a
O
V
107 MHz
...-- f-'".--::;:::;
~
p.&
/~ f::"""
5
IW
2
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-147
•
BF254,.3,-4
•
CASE 29-04, STYLE 21
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
100
mAdc
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
350
2.8
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
1.0
8.0
Watt
mWrC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
23
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
I
Max
ReJC
I
I
R8JC
I
Symbol
I
ELECTRICAL CHARACTERISTICS (TA
125
I
I
°C/W
357
I
°C/W
~()'-
"
2 Emitter
AM/FM TRANSISTORS
Unit
NPN SILICON
= 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 10 (lAde, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 (lAdc, IC = 0)
V(BR)EBO
Vdc
20
Vdc
30
Vdc
5.0
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
nAdc
100
nAdc
100
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mA. VCE = 10 Vdc)
hFE
BF254
BF254-3
BF254-4
Base-Emitter On Voltage
(lc = 1.0 mAde, VCE = 10 Vdc)
65
65
100
220
125
220
Vdc
VBE(on)
0.68
BF254
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 1.0 mAde, VCE = 10 Vdc, f = 100 MHz)
MHz
fT
BF254
260
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cre
Noise Figure
(lC = 1.0 mAde, VCE = 10 Vdc, f = 1 MHz, RS = 50 ohms)
Nf
pF
0.90
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-148
dB
1.7
BF254, BF254-3, BF254-4
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
•
TYPICAL ADMITTANCE PARAMETERS (lC = 1 0 mAdc VCE = 10 Vdc frequency as stated)
f = 450 kHz
f = 10.7 MHz
Symbol
BF254
BF254
Unit
911e
0.2
0.26
mmhos
bIle
0.05
1.2
mmhos
922e
3.0
5.3
/LmhoS
b22e
8.0
190
/Lmhos
b12e
-5.0
-130
/Lmhos
912e
-0.7
-3.0
/Lmhos
921e
30
30
mmhos
b21e
-0.003
-0.7
mmhos
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - CURRENT GAIN-BANDWITH PRODUCT
1000
:i'
~ 50o-VCE
t; 40 0
VCE
~
l
[
'"f~
'"i3
u
o
i
~
z
100
/1--"
;;i
z
0
0
30
0
'"I-
0
0
0
~
20
;;
Z
i3'"
10
01
05
10
50
10
r::
20
0
101
02
05
FIGURE 3 - '"ON'" VOLTAGE
0.9 ; -
~
>
'"
20
100
FIGURE 4 - CAPACITANCES
0
vULv
-
0.8
0.7
t-l MHz
0
0
0
~
z
--
> 05
;'t
j O. 5
w
d
O. 4
O. 3
w
u
0.4
r-......
........
1. 0
0.6
Cob
r--
2. 0
w
u
;::
<3
>'"
10
IC. COLLECTOR CURRENT ImAI
IC. COLLECTOR CURRENT IOlAI
~
BF254
V
200
'"fBFt4
100
.-
~ 30 0
10 V
z
;; 20i)
10 V
Cob
ere'
2
03
0.2
0.5
10
o1
20
0.1
IC. COLLECTOR CURRENT ImAI
0.2
05
1.0
20
50
10
VR. REVERSE VOLTAGE VOLTS
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-149
20
IE - 0
BF366
•
CASE 29-04, STYLE 2
TO-92 (TO-226AAI
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
35
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Collector Current - Continuous
IC
25
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW;oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
3 Collector
~()
2 Emitter
THERMAL CHARACTERISTICS
I
I
Thermal Resistance, Junction to Ambient I.
Characteristic
I
I
Max
ReJC
ROJC
I
357
Symbol
Thermal Resistance, Junction to Case
125
I
I
°C/W
I
I
I
°C/W
I
Unit
VHF TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
I
Symbol
Min.
Typ.
. V(BR)CEO
30
-
-
Vdc
Collector-8ase Breakdown Voltage
(IC = 100 flAdc, IE = 0)
V(BR)CBO
35
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 flAdc,lC = 0)
V(BR)EBO
4.0
-
-
Vdc
Characteristic
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAdc,lB = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
-
-
50
nAde
Collector Cutoff Current
(VCE = 12 Vdc, IB = 0)
ICEO
-
-
500
nAde
-
-
-
-
-
1.0
Vde
-
-
MHz
ON CHARACTERISTICS
DC Current Gain
(lc h 3.0 mAde, VCE = 10 Vde)
(lc = 12 mAde, VCE = 7.0 Vdc)
hFE
Base-Emitter On Voltage
(lc = 12 mAde, VCE = 7.0 Vdc)
VBE(on)
15
5.5
-
IT
400
-
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(lc = 3.0 mAde, VCE = 10 Vdc, I = 100 MHz)
Feedback Capacitance (Common Emitter)
(VCE = 10 Vde, f = 1 MHz)
Noise Figure
(IC ~ 3.0 mAde, VCB ~ 10 Vdc,
RS = 50 Ohms, I = 200 MHz)
Crb
-
-
.0.3
pF
Nf
-
-
3.5
dB
-
dB
Common-Emitter Amplifier Power Gain
(lc ~ 3.0 mAde, VCB ~ 10 Vde,
RS = 50 Ohms, I = 200 MHz)
Gpb
14
-
Forward AGC Current
(Gain Reduction = 30 dB, VCB = 10 V, I = 200 MHz)
IAGC
5
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-150
8
mAde
BF371
BF373
MAXIMUM RATINGS
Rating
Symbol
BF
371
BF
373
Coliector-Emitter,Voltage
VCEO
30
45
Vdc
Collector-Base Voltage
VCBO
40
45
Vdc
Emitter-Base Voltage
VEBO
4,0
Vdc
Collector Current - Continuous
IC
100
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
350
2,8
mW
mW/oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
Unit
,I ~()"23
THERMAL CHARACTERISTICS
I
I
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS
(TA
=
I
VHF TRANSISTOR
Max
I
Unit
RIIJC
I
I
125
RIiJC
I
I
I
°C/W
357
Symbol
2 Emitter
NPN SILICON
°C/W
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
BF371
BF373
V(BR)CEO
30
45
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
BF371
BF373
V(BR)CBO
40
45
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
-
Vdc
4.0
-
Vdc
-
-
-
50
nAdc
40
15
-
-
-
Vde
ON CHARACTERISTICS
DC Current Gain
(IC = 7.0 mAde, VCE = 10 Vdc)
(lC = 20 mAde, VCE = 2,0 Vde)
hFE
-
Collector-Emitter Saturation Voltage
(IC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
-
-
0.5
Vdc
Base-Emitter On Voltage
(lC = 7.0 mA, VCE = 10 Vdc)
VBE(on)
-
-
0.9
Vdc
t,.
400
500
720
720
-
MHz
Cre
-
0.2
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 5.0 mAde, VCE = 10 Vdc, f
=
100 MHz)
BF371
BF373
Common-Emitter Feedback Capacitance
NCB = 10 Vde, IE = 0, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-151
0.32
pF
•
•
BF374
BF375,C,D
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
100
mAdc
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
350
2.s
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Symbol
Max
RYJC
125
I
I
°C/W
I
I
ReJC
357
I
°C/W
I
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
I
I
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
Unit
VHF TRANSISTORS
NPN SILICON
Refer to MPSH 10 for graphs.
ELECTRICAL CHARACTERISTICS
(T A
= 25°C
unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAdc, IB = 0)
V(BR)CEO
25
Vdc
Collector-Base Breakdown Voltage
(lc = 10 flAde, IE = 0)
V(BR)CBO
30
Vde
Emitter-Base Breakdown Voltage
(IE = 10 flAde, IC = 0)
V(BR)EBO
3.0
Vde
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 25 Vde, IE = 0)
ICBO
100
nAdc
Emitter Cutoff Current
(VEB = 2.0 Vde, IC = 0)
lEBO
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAde, VCE
=
hFE
BF374
BF375
BF375C
BF375D
10 Vde)
70
35
70
35
Collector-Emitter Saturation Voltage
(lc = 1.0 mAde, IB = 0.1 mAde)
(IC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAde)
VBE(sat)
Base-Emitter On Voltage
(lc = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vdc
VBE(on)
250
120
120
90
50
70
mVdc
mVde
830
mVde
700
770
mVde
mVde
BOO
MHz
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(lc = 1.0 mAde, VCE = 10 Vdc, f
=
fT
Common Emitter Feedback Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Collector-Base Time Constant
(IC = 4.0 mAde, VCE = 10 Vde, t
= 31.8
Noise Figure
(lC = 1.0 mAde, VCE
= 100 MHz,
=
10 Vde, t
400
100 MHz)
Cre
0.55
0.6
pF
rbCe
6
ps
Nt
4
dB
Gpe
20
dB
MHz)
Rs
= 50
ohms)
Common-Emitter Amplifier Power Gain
(lC = 1.0 mAdc, VCE = 10 Vdc, t = 200 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-152
BF374, BF375, BF375C, BF375D
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
TYPICAL ADMITTANCE PARAMETERS (lc
=
1.0 mAde, VCE
=
f - 30 MHz
f-l00MHz
Unit
Glle
0.28
0.4
1.4
mmho
Blle
0.6
1.6
5.0
mmho
G22e
6.5
7
20
I'mho
B22e
0.1
0.3
1.0
mmho
G21e
36
34
30
mmho
821e
- 0.8
- 2.5
-9
mmho
B12e
- 52
- 150
- 500
I'mho
FIGURE 1 - INPUT ADMITTANCE
(Output short circuit)
FIGURE 2 - OUTPUT ADMITTANCE
(Input short circuit)
1OK
10 K
lK
1
~'VCE'IQV
_VCE"lU'
r==
f--. r = lmA
E
.3
tJ
1K
1
~
•
10 Vdc, frequency as stated)
f - 10.7 MHz
Symbol
L
'C .lmA
/'
100
822.
Gil.
8
~
.L
1
100
1o
G 22.
Bile
03
05
3
5
1o
10
30
50
1
100
01
f - FREQUENCY I MHz)
FIGURE 3 -
1
030.5
3
10
30
FORWARD TRANSFER ADMITTANCE
(Output short circuit)
FIGURE 4 -
REVERSE TRANSFER ADMITTANCE
(Input short circuit)
10
f==VCE=IOV
~rc·'mA
'"
v
/'
~ 100
21.
~
~
g
~
/'
10
~
01
821.
~
1r
)---.
.t.o.lI1
I
1
01
0.3
05
1
5
100
f - fREQUENCY I MHt)
K
~
50
10
30
50
001
100
0,1
I-fREQUENCY IMHz!
D,3 0,5
1
1O
FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-153
30 50
•
BF391
BF392
BF393
MAXIMUM RATINGS
Rating
Symbol
BF BF BF
391 392 393
Unit
Collector-Emitter Voltage
VCEO
200 250 300
Vdc
Collector-Base Voltage
VCBO
200 250 300
Vdc
Em itter-Base Voltage
VEBO
6.0
Vdc
IC
500
mAde
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
625
5.0
mW
mW/oC
Total Device Dissipation@ TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance, Junction to Case
I
I
I Thermal Resistance, Junction to Ambientl
I
I
Symbol
ReJC
ReJC
j
Max
83.3
200
I
I
J
Unit
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~()
, Emitter
HIGH VOLTAGE TRANSISTORS
°C/W
NPN SILICON
°C/W
Refer to MPSA42 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherWise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
, (lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100 flAdc, IE = 0)
Vdc
V(BR)CEO
BF391
BF392
BF393
200
250
300
-
200
250
300
-
BF391
BF392
BF393
Emitter-Base Breakdown Voltage
(IE = 100 flAdc,lC = 0)
6.0
6.0
6.0
-
V(BR)EBO
BF391
BF392
BF393
Collector Cutoff Current
(VCB = 160 Vdc, IE = a)
(VCB = 200 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
ICBO
BF391
BF392
BF393
Emitter Cutoff Current
(VCB = 4.0 Vdc, IC = a)
(VCB = 6.0 Vdc, IC = a)
(VCB = 6.0 Vdc, IC = a)
BF391
BF392
BF393
Vdc
flAdc
-
lEBO
Vdc
V(BR)CBO
-
0.1
. 0.1
0.1
flAdc
-
0.1
0.1
0.1
25
40
-
-
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAde, VCE = 10 Vdc)
(lc = 10 mAde, VCE = 10 Vdc)
-
hFE
All Types
All Types
Collector-Emitter Saturation Voltage
(lc = 20 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 20 mA, IB = 2.0 mAl
VBE(sat)
Vdc
2.0
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAde, VCE = 20 Vdc, f = 20 MHz)
fT
Common Emitter Feedback Capacitance
(VCB = 60 Vdc, IE = 0, f = 1.0 MHz)
Cre
50
(I) Pulse Test: Pulse Width", 300 fls, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-154
-
MHz
pF
2.0
BF420
BF422
MAXIMUM RATINGS
Rating
Symbol
BF
BF
420
422
Collector-Emitter Voltage
VCEO
300
250
Vdc
Collector-Base Voltage
VCBO
300
250
Vdc
Emitter-Base Voltage
Collector Current - Continuous
VEBO
5.0
Vdc
IC
500
mAdc
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
800
6.4
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
2.75
22
Watt
mW/oC
TJ,Tstg
-55 to +150
°C
Symbol
Operating and Storage Junction
Temperature Range
CASE 29-04. STYLE 14
TO-92 (TO-226AA)
Unit
2 Collector
~.-©
1 Emitter
THERMAL CHARACTERISTICS
Max
Unit
HIGH VOLTAGE TRANSISTORS
Thermal Resistance, Junction to Case
ReJC
45
°C/W
NPN SILICON
Thermal Resistance, Junction to Ambient
ReJC
156
°C/W
Characteristic
Refer to MPSA42 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(IC = 1 mAdc, IB = 0)
Vdc
V(BR)CEO
BF420
BF422
Collector-Base Breakdown Voltage
(IC = 1 00 ~Adc, IE = 0)
300
250
Vdc
V(BR)CBO
BF420
BF422
Emitter-Base Breakdown Voltage
(IE = 100 ~Adc,IC = 0)
300
250
Vdc
V(BR)EBO
BF420
BF422
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
5.0
5.0
~Adc
ICBO
BF420
BF422
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
0.01
nAdc
lEBO
8F420
BF422
100
-
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE
hFE
=
20 Vdc)
BF420
BF422
50
50
Collector-Emitter Saturation Voltage
(lc = 20 mAdc, IB = 2.0 mAd c)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 20 rnA, IB = 2.0 rnA)
VBE(sat)
Vdc
0.5
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAdc. VCE = 10 Vdc, I = 50 MHz)
IT
60
Common Emitter Feedback Capacitance
(VCB = 30 Vdc, IE = 0, I = 1.0 MHz)
(1) Pulse Test: Pulse Width
~
300
~s,
Duty Cycle
-
pF
Cre
1.6
~
2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-155
MHz
•
•
BF421
BF423
MAXIMUM RATINGS
Symbol
Rating
BF
BF
421
423
Collector-Emitter Voltage
VCEO
300
250
Vdc
Collector-Base Voltage
VCBO
300
250
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
= 25°C
PD
800
6.4
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
2.75
22
Watt
mWrC
TJ, Tstg
-55 to +150
°c
Symbol
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
Unit
THERMAL CHARACTERISTICS
2 Collector
~()
1 Emitter
Max
Unit
HIGH VOLTAGE TRANSISTORS
Thermal Resistance, Junction to Case
RBJC
45
°C/W
PNPSILICON
Thermal Resistance, Junction to Ambient
RHJC
156
°C/W
Characteristic
Refer to MPSA92 for graphs.
ELECTRICAL CHARACTERISTICS (T A
=
25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lc = 1 mAde, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100 flAdc, IE = 0)
= 100
flAdc. IC
300
250
-
300
250
-
5.0
5.0
-
Vdc
V(BR)CBO
BF421
BF423
Emitter-Base Breakdown Voltage
(IE
Vdc
V(BR)CEO
BF421
BF423
Vdc
V(BR)EBO
= 0)
BF421
BF423
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
!lAde
ICBO
BF421
BF423
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
0.01
lEBO
BF421
BF423
nAdc
100
-
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mA, VCE
hFE
= 20 Vdc)
BF421
BF423
50
50
Collector-Emitter Saturation Voltage
(IC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter SaturatIOn Voltage
(IC = 20 rnA, IB = 2.0 rnA)
VBE(sat)
Vdc
0.5
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAde, VCE = 10 Vdc, f = 50 MHz)
MHz
fT
60
Common Emiller Feedback Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
pF
C re
2.8
(1) Pulse Test: Pulse Width;;;; 300 !lS, Duty Cycle;;;; 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-156
BF491
BF492
BF493
MAXIMUM RATINGS
Rating
Symbol
BF BF BF
491 492 493
Unit
Collector-Emitter Voltage
VCEO
200 250 300
Vdc
Collector-Base Voltage
VCBO
200 250 300
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current - Continuous
IC
500
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
°C/W
Thermal Resistance, Junction to Ambient
RHJC
200
°C/W
Characteristic
II
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
, EmItter
HIGH VOLTAGE TRANSISTORS
PNPSILICON
Refer to MPSA92 for graphs,
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lc = 1 mAde, IB = 0)
Collector-8ase Breakdown Voltage
(lc = 100 !-lAde, IE = 0)
V(BR)CEO
8F491
8F492
BF493
200
250
300
-
200
250
300
-
6.0
6.0
6.0
-
-
0.1
0.1
0.1
-
0.1
0.1
0.1
25
40
-
V(BR)CBO
BF491
BF492
BF493
Emitter-Base Breakdown Volt9ge
(IE = 100 !-lAdc,IC = D)
V(BR)EBO
BF491
BF492
BF493
Collector Cutoff Current
(VCB = 160 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
ICBO
BF491
BF492
BF493
Emitter Cutoff Current
(VCB = 4.0 Vdc, IC = 0)
(VCB = 6.0 Vdc, IC = 0)
(VCB = 6.0 Vdc, IC = a)
lEBO
BF491
BF492
BF493
Vdc
Vdc
-
Vdc
!-lAde
!-lAde
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAde, VCE = 10 Vdc)
(lc = 10 mAde, VCE = 10 Vdc)
hFE
All Types
All Types
Collector-Emitter Saturation Voltage
(IC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 20 mA, IB = 2.0 mAl
VBE(sat)
Vdc
2.0
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain
Bandwidth Product
(lc = 10 mAde, VCE = 20 Vdc, f = 20 MHz)
fT
50
Common Emitter Feedback Capacitance
(VCB = 100 Vdc, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse W,dth S 300
flS,
-
pF
Cre
1.6
Duty Cycle:;; 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-157
.. MHz
BF493S
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
VCEO
350
Unit
. Vdc
Collector-Base Voltage
VCBO
350
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current - Continuou.s
IC
500
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Max
Unit
83.3
°C/W
200
°C/W
Rating
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance, Junction to Case
I
I
I
I
Symbol
I Thermal Resistance, Junction to Ambient I
RIIJC
RIIJC
I
3 Collector
~()
1 EmItter
HIGH VOLTAGE TRANSISTOR
PNP SILICON
Reier to MPSA93 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAdc,lB = 0)
V(BR)CEO
350
Collector-Base Breakdown Voltage
(lC = 100 /fAde, IE = 0)
V(BR)CBO
350
Emitter-Base Breakdown Voltage
(IE = 100 /fAde, IC = 0)
V(BR)EBO
6.0
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vde
Vdc
Vde
Collector Cutoff Current
(VCE = 250 Vdc)
ICES
-
10
nAde
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
lEBO
-
0.1
/fAde
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0, TA = 25·C)
(VCB = 250 Vde, IE := 0, TA = 100·C)
ICBO
-
0.005
1.0
25
40
-
/fAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vdc)
(lC = 10 mAde, VCE = 10 Vdc)
hFE
-
-
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB =.2.0 mAde)
VCE(sat)
-
2.0
Vdc
Base-Emitter On Voltage
(lC = 20 rnA, IB = 2.0 rnA)
VBE(sat)
-
2.0
Vdc
iT
50
-
MHz
Cre
-
1.6
pF
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, I = 20 MHz)
Common-Emitter Feedback Capacitance
(VCB = 100 Vdc, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse WIdth", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-158
BF506
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
35
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
50
mAde
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
350
2.B
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
-55 to +150
°C
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
MAXIMUM RATINGS
11 ~~"~.'
2
3 Emitter
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
VHF TRANSISTOR
Thermal Resistance, Junction to Ambient
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 I'Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 I'Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 V, IE = 0)
Vdc
35
-
-
40
-
-
4
-
-
-
-
100
450
-
650
-
0.6
0.9
-
0.15
0.25
-
2.5
3
14
22
ICBO
Vdc
Vdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 3 mAde, VCE
= 10 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 2 mAde, VCE = 10 Vdc, 1= 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, 1 = 1.0 MHz)
CCBO
Feedback Capacitance (Grounded Base)
(VCs = 10 Vdc, IE = 0, 1 = 1.0 MHz)
Crb
Noise Figure
(lC = 2mA, RS = 50n,1 = 100 MHz, VCC = 10V)
NF
Power Gain
(lc = 3 mA, RL = 1 KQ,I
= 200
MHz
IT
pF
pF
dB
dB
Gpb
MHz, VCC = 10.8 V)
200 MHz POWER GAIN NOISE FIGURE TEST CIRCUIT
*leadless ceramic disc capacitor
L 1 = 3 turns 0.0 mm enamel, 4 mm dia.
L2 = 2 turns 1 mm enamel, 6.5 mm die.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-159
-
BF506
FIGURE 1 - CURRENT GAIN - BANDWIDTH PRODUCT
•
800
700
600
500
400
-
/
FIGURE 2 - NOISE FIGURE
10
VCE-l0V_
-100MHz
I
VCC- 6 V
f-200MHz
9
f
.......
I
J
L
/
i"..
5
300
4
200
3
2
\
1
"'- "-
/
L
I
100
10
IC, COLLECTOR CURRENT (mAl
IC, COLLECTOR CURRENT (mAl
FIGURE 3- FORWARD TRANSFER ADMITTANCE
FIGURE 4 - INPUT ADMITTANCE
+2 0
-~
.§.
w
'-'
z
80
0
ImA~
~
...
~
o
60~---+----4_----~~~----4H----~--_+----4
0
«
$
z 40 f---+--.~
to
=
~
~'b' IeVJ8-101~~
as specIfied frequency
V,b
11
-
-r--r-1'\ ~ 7 r-...
\
1\ V'\
\/
0
20f---_+--~4_~~~~~~--4_----~~_+----4
J!mA
D
-140
-120
-100
-80
o
20
40
91b, FORWARD TRANSFER ADMITTANCE (mmh,,1
60
1200 MHz
I
w
Vob"
'-'
z
«
::
Vcs-IOV
Ic - I, 3, 5 mA-:-:::;frequency pomts in MHz
~
«
...
I
o
100MHz
D
I
.8
36 MHz
107 MHz
0
-03
L
IC - 5 mA
80
100
120
140
9,b, INPUT ADMITTANCE (mmho51
FIGURE 5- OUTPUT ADMITTANCE
~=>
100
-8 0
-20
-40
-60
":
lL
I ..--V
~
E
r---l07MH
~6
\ V
\zoo
0
POlntSI1H
-0.2
-0 I
+0 I
+02
+03
gob, OUTPUT ADMITTANCE (mmho51
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-160
160
180
200
BF844
BF845
MAXIMUM RATINGS
Rating
Symbol
BF
844
BF
845
Unit
Collector-Emitter Voltage
VCEO
400
350
Vdc
Collector-Base Voltage
VCBO
450
400
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
300
mAde
Collector Current - Continuous
Total Device Dissipation @ T A
Derate above 25°C
= 25°C
PD
625
5.0
mW
mW/"C
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RAJC
83.3
°C/W
Thermal Resistance, Junction to Ambient
RAJC
200
°C/W
Operating and Storage Junction
Temperature Range
3 Collector
":~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
II
CASE 29-04. STYLE 1
TO-92 (TO-226AA)
VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPSA44 for graphs.
I
ELECTRICAL CHARACTERISTICS ITA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltagel1)
IIc = 1.0 mAde, IB = 0)
VIBR)CEO
BF844
BF845
Collector-Emitter Breakdown Voltage
IIc = 100 !lAde, VBE = 0)
400
350
Collector-Base Breakdown Voltage
IIc = 100 !lAde, IE = 0)
450
400
VIBR)CBO
450
BF844
BF845
Emitter-Base Breakdown Voltage
liE = 10 !lAde, IC = 0)
Both Types
Collector Cutoff Current
IVCB = 400 Vdc, IE = 0)
IVCB = 320 Vde, IE = 0)
BF844
BF845
Collector Cutoff Current
IVCE = 400 Vde, VBE = 0)
IVCE = 320 Vde, VBE = 0)
BF844
BF845
400
VIBR)EBO
ICBO
ICES
80th Types
Emitter Cutoff Current
IVBE = 4.0 Vde, IC = 0)
lEBO
Vdc
Vdc
VIBR)CES
BF844
BF845
-
6.0
-
--
----
Vdc
Vdc
!lAde
0.1
-
0.1
-
500
500
-
0.1
40
50
45
20
-
nAde
!lAde
ON CHARACTERISTICS
DC Current Gain 11)
IIc = 1.0 mAde, VCE = 10 Vde)
IIc = 10 mAde, VCE = 10 Vde)
IIC = 50 mAde, VCE = 10 Vde)
IIc = 100 mAde, VCE = 10 Vde)
hFE
Both
80th
Both
Both
Collector-Emitter Saturation Voltage 11)
IIc = 1.0 mAde. IB = 0.1 mAde)
IIc = 10 mAde, IB = 1.0 mAde)
IIc = 50 mAde, IB = 5.0 mAde)
Types
Types
Types
Types
VCElsat)
Both Types
Both Types
Both Types
Base-Emitter Saturation Voltage
IIc = 10 mAde, IB = 1.0 mAde)
VBElsat)
11) Pulse Test: Pulse Width;:o 300!lS -
Duty Cyele;:o 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-161
-
-
200
-
Vde
0.4
-
0.5
0.75
-
0.75
Vde
BF844,BF845
ELECTRICAL CHARACTERISTICS (centinued) (TA = 25°C unless o.therwise neted.)
•
C
I
Characteristic
Symbol
Min
Max
Unit
DYNAMIC CHARACTERISTICS
High Frequency Current Gain
(IC= 10mAdc,VCE= 10Vdc,l= 10MHz)
Beth Types
Ihfe l
2.0
-
Cellecter-Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Beth Types
Ceb
-
6.0
pF
Emitter-Base Capacitance
(VEB = 0.5 Vdc, IC = 0, I = 1.0 MHz)
Beth Types
Cib
-
110
pF
Turn-On Time
(VCC = 150 Vdc, VBE(elf) = 4.0 V,
IC = 30 mAde, IBI = 3.0 mAde)
Beth Types
ten
-
0.6
~s
Turn-Off Time
Beth Types
(VCC = 150 Vdc, IC = 30 mAde, IBI = IB2 = 3.0 mAde)
tell
-
10
~.
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - COLLECTOR SATURATION REGION
160
I I
" II
140
TA
100
0<
0<
B 80
........-.
u
-
TA
=25°C
20
-
2.0
50
.
0.40
>
030
I IL
J lUll
IC = 1.0 mA
Ic=10mA
I
'"
!:;
10
20
50
100
IC, COLLECTOR CURRENT (mA)
.\
1\
020
'"
!;j
::l 0.10
f.\.
=-55°C
IIIII!
Ic=50mA
~
~
\.
\
1.0
'"
:::.
'"~
\
TA
in
!:;
'"
60
40
=10V
-
c
;
I I I
veE
z 120
;;:
'"ffi
J 1 L
=125°C
0.50
l"'-
u
'"
u:.
~
200 300
0.0
10
30
100
300
i'lk
3k
IB' BASE CURRENT IIlAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-162
I
TA = 25°C
'"
10k
SDk
BF959
CASE 29-04, STYLE 21
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
, Collector
IC
100
mAdc
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
PD
625
5.0
mW
mWjOC
Total Device DissipatIOn @TC
Derate above 25°C
~
25°C
PD
1.5
12
Watt
mW;oC
TJ, Tstg
- 55 to +150
°C
Collector Current - Continuous
Operating and Storage Junction
Temperature Range
i.()
2 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
VHF TRANSISTOR
Thermal Resistance, Junction to Case
RHJC
83.3
°C/W
NPN SILICON
Thermal Resistance, Junction to Ambient
RHJC
200
°C/W
Characteristic
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherWise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ~ 1.0 mAdc, IB ~ 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 10 IlAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 IlAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
20
-
-
30
-
-
3.0
-
-
-
-
35
40
-
-
-
-
-
-
1.0
-
-
1
Vdc
Vdc
Vdc
nAdc
100
ON CHARACTERISTICS
DC Current Gain
(lc = 5 mAdc, VCE = 10 Vdc)
(lc = 20 mAdc, VCE = 10 Vdc)
hFE
Collector-Emitter SaturatIOn Voltage
(lc = 30 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 30 mAdc, IB = 2.0 mAdc)
VBE(sat)
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - BandWidth Product
(lc ~ 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz)
MHz
ft
700
600
Common Emitter Feedback Capacitance
(VCB ~ 10 Vdc, PI = 0, I = 10 MHz)
Cre
Noise Figure
(IC = 4 mA, VCE = 10 V, RS = 50 D, f = 200 MHz)
Nf
-
-
pF
-
0.65'
-
-
3
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-163
-
dB
•
BF959
FIGURE 1 - Hf. AT 10 V
•
FIGURE 2 - VCE Sat AT ICIIB = 10
HI.
mV
200
v
.....V
200
100
.",..-
100
50
50
40
40
30
30
20
20
10
10
2
3
4 5
20
10
30
Ie
50
2
rnA
3
4
5
20
10
30
4050mA
FIGURE 4 - CAPACITANCES
FIGURE 3 - CURRENT -GAIN _. BANDWIDTH.pRODUCT
GHz
",
1.8
l;-
1.6
t--
1/
IV
,
/
1.2
/
_, 1\
\ \
/
08
0.6
1.4
'\ '\
\1'
1\
\
.IV'
1.4
1.6
/
1.2
\
0.8
\ 10V.
I
r-.
--.....
r--.
0.6
'2V-""
1 5~
/
--
t-
ib
r--~
~
Cob
r-~
0.4
r-
Cre
0.2
2
345
10
20
30 4050
2
mA
FIGURE 5 - INPUT IMPEDANCE AT 30 MHz
3
4
10
5
v
20
FIGURE 6 - OUTPUT IMPEDANCE AT 30 MIU
Y22e
uS
gIl.
~
2
VCE -
V-
IIOV
--.....
I--VV
I/ g 22.
200 ~
........
3
~
I--
300
V
VCE = 10V
100
1"-- bl •
50
.5
.4
L
40
1/
30
.3
.2
20
.1
10
2
3
4
5
10
20
30
2
ICmA
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-164
V
345
10
20
30
rnA
MPS536
CASE 29-04. STYLE 2
TO-92 (TO-226AA)
II
3 Collector
~-©
MAXIMUM RATINGS
Rating
Symbol
MPS536
Unit
Collector-Emitter Voltage
VCEO
10
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
30
mA
Po
625
5.0
mW
mWfC
Tsts
-65 to +150
°c
Collector Current - Continuous
Power Dissipation @TA
Derate above 25°C
=
25°C
Storage Temperature
2 Emitter
3
HIGH FREQUENCY
TRANSISTOR
PNP SILICON
*Free air
ELECTRICAL CHARACTERISTICS (TC = 25°C "For both package types unless otherwise noted.)
I
Characteristic
Symbol
I
Min
I
Typ
Max
Unit
OFF CHARACTERISTICS
= 2.0 mA, IB = 0)
100 pA, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 pA, IC = 0)
Collector Cutoff Current (VCB = 10 Vdc, IE = 0)
-
-
Vdc
4.5
-
-
Vdc
-
-
10
nAdc
Collector-Emitter Breakdown Voltage (lC
V(BR)CEO
10
=
V(BR)CBO
15
V(BR)EBO
Collector-Base Breakdown Voltage (lc
ICBO
Vdc
ON CHARACTERISnCS
I DC Current Gain (lc
20
= 20 mA. VCE = 5.0 V)
200
DYNAMIC CHARACTERlsncs
Current Gain-Bandwidth Product
(lc = 20 mAdc, VCE = 5.0 Vdc, f
Collector-Base Capacitance
(VCB = 5.0 Vdc, IF = 0, f
=
=
fy
-
4.5
-
Ccb
-
0.8
1.2
14
8.0
-
4.5
6.0
-
GHz
1.0 GHz)
1.0 MHz)
pF
FUNCTIONAL TESTS
Gain @ Noise Figure
(lC = 10 mAde, VCE
Noise Figure
(lc = 10 mAdc, VCE
= 5.0 Vde)
f
f
=
=
GNF
500 MHz
1.0 GHz
NF
= 5.0 Vde)
f
f
=
=
500 MHz
1.0 GHz
dB
-
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-165
-
dB
MPS536
25
•
I
I
,
'15;,1'!
GAm.. ~ fSi2j Ik ±
0
.......
r-....
k",1
.......
5
~
...... ~
r-...
........
~
........
0
vCE ~ 5 V
f ~ 1 GHz
r--
~-
t:-....
i'~
............
5
VCE
~
5V
...........
Ic~20mA
10
15
IC, COLLECTOR CURRENT ImAI
o
25
20
0.2
111
0.5
f, FREQUENCY !GHz!
0.3
Figure 2. Maximum Available Gain (GAmax)
versus Frequency
Figure 1. Current Gain-Bandwidth Product
versus Collector Current
5
0
I
20 r-....
r-.....; t--.
5
1_ I I I 15211 2
I
_
GUma. - 11 - 15,,12111 - 1522121 _
f - 500 MHz
r--..:: t--.
GUm ••
~
15211 2"":::: ~
0
O
0.3
f
~
1 GHz
f.--I""
IC~20mA
0
0.2
V
k....- t -
I
I"~ ~
VCE~5V~
5
L
~
VCE
0
0.5
f. FREOUENCY IGHzl
Figure 3. Maximum Unilateral Gain (GUmax)
and Insertion Gain (182112)
versus Frequency
12
8
IC, COLLECTOR CURRENT ImAI
~
5V
16
Figure 4. Gain at Noise Figure versus
Collector Current
0
2
8
6
4
-~
~
--
f - 1GHz
f
I'-.
500 MHz
1
,I
2
-
VCE
I
~
----
--
5V- ,--I
r-
f
0
~
1 MHz
0
8
12
IC. COLLECTOR CURRENT ImAI
16
20
1
2
VBE. BASE·EMITIER VOLTAGE IVdc!
Figure 5. Noise Figure versus Collector Current
Figure 6. Input Capacitance versus
Emitter-Base Voltage
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-166
20
MPS536
"'
""
.........
...........
r--...
r--
-
II
Cabo
r-;;.;,,;.
Ccb
f = 1 MHz
o
o
2
4
6
VCB, COLLECTOR·BASE VOLTAGE IVdc)
10
Figure 7. Output Capacitance versus
Collector-Base Voltage
FORWARD/REVERSE
TRANSMISSION COEFFICIENTS
versus
FREQUENCY
VCE = 10 V, IC = 10 rnA
INPUT/OUTPUT REFLECTION COEFFICIENT
versus
FREQUENCY
VCE = 10 V, IC = 10 rnA
-jSO
COMMON EMITTER S-PARAMETERS
veE
Ie
f
(Volts)
(mA)
(MHz)
15 111
L
15 211
L
15 121
L
15 221
L
10
5
200
500
1000
1500
2000
0.60
0.30
0.17
0.15
0.28
-43
-60
-103
156
110
6.60
3.64
2.11
1.70
1.29
125
87
56
28
2
0.07
0.14
0.22
0.30
0.33
68
57
43
28
13
0.71
0.47
0.32
0.22
0.25
-35
-43
-69
-112
-174
10
200
500
1000
1500
2000
0.48
0.21
0.12
0.18
0.32
-52
-66
-122
138
104
8.78
4.31
2.40
1.90
1.41
118
84
54
29
4
0.06
0.12
0.20
0.29
0.33
69
60
47
31
16
0.62
0.37
0.24
0.16
0.23
-42
-46
-73
-126
170
20
200
500
1000
1500
2000
0.38
0.14
0.11
0.22
0.35
-59
-76
-144
132
103
10.21
4.72
2.58
1.99
1.46
112
81
53
28
4
0.06
0.12
0.20
0.29
0.33
70
63
49
34
19
0.54
0.30
0.19
0.12
0.22
-46
-47
-74
-139
161
511
521
512
MOTOROLA SMALL-S(GNAL SEMICONDUCTORS
2-167
522
MAXIMUM RATINGS
Collector-Emitter Voltage
VCE
40
60
Vde
Collector-Base Voltage
VCB
60
80
Vde
Emitter-Base Voltage
VEB
5.0
Vde
IC
2.0
Ade
NPN
MPS650, MPS651
PNP
MPS750, MPS751
625
12
mW
mWfC
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
1.5
5.0
Watt
mWfC
-55to +150
'c
Rating
•
Collector Current -
MPS650
MPS750
Svmbol
Continuous
Total Power Dissipation
@TA=25'C
Derate above 25'C
Po
Total Power Dissipation
@TA= 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
MPS651
MPS751
Unit
,,'
THERMAL CHARACTERISTICS
Characteristic
I
3
Unit
Svmbol
Max
Thermal Resistance, Junction to Case
R8JC
83.3
'CIW
Thermal Resistance, Junction to Ambient
R8JA
200
'CIW
AMPLIFIER TRANSISTORS
ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Svmbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !LAde, IE = 0)
MPS650, MPS750
MPS651, MPS751
V(BR)EBO
ICBO
MPS650, MPS750
MPS651, MPS751
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
lEBO
-
40
60
-
60
80
-
5.0
-
-
0.1
0.1
-
0.1
75
75
75
40
-
-
0.5
0.3
Vde
V(BR)CBO
Emitter-Base Breakdown Voltage
(lC = 0, IE = 10 !LAde)
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
(VCB = 80 Vde, IE = 0)
Vde
V(BR)CEO
MPS650, MPS750
MPS651, MPS751
Vde
/LAde
/LAde
ON CHARACTERISTICS(l)
DC Current Gain
(lC = SO mA, VCE = 2.0 V)
(lc = SOO mA, VCE = 2.0 V)
(lc = 1.0 A, VCE = 2.0 V)
(lc = 2.0 A, VCE = 2.0 V)
-
hFE
Collector-Emitter Saturation Voltage
(lc = 2.0 A, IB = 200 mAl
(lC = 1.0 A, IB = 100 mAl
VCE(sat)
Base-Emitter On Voltage
IIC = 1.0 A, VCE = 2.0 V)
VBE(on)
-
1.0
Vde
Base-Emitter Saturation Voltage
(lC = 1.0 A, IB = 100 mAl
VBE(sat)
-
1.2
Vde
r-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Produet(2)
(lC = 50 mAde, VCE = 5.0 Vde, f = 100 MHz)
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cvele = 2.0%.
(2) fr is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-168
Vde
MPS650, MPS651 NPN, MPS750, MPS751 PNP
FIGURE 1 - MPS650. MPS651
TYPICAL DC CURRENT GAIN
FIGURE 2 - MPS750. MPS751
TYPICAL DC CURRENT GAIN
NPN
300
24O~
13
g
Hi
60
-
II
-55°C
.......
I-
~
~ 125
I
~ 100
I
u
-
.......
50
o
10
50
20
100
200
500 lOA 20 A 40 A
IC. COLLECTOR CURRENT (mAl
10
20
FIGURE 3 - MPS650. MPS651
ON VOLTAGES
50
100 200
500 1.0 A 2.0 A 4.0 A
IC. COLLECTOR CURRENT (rnAI
FIGURE 4 - MPS750. MPS751
ON VOLTAGES
PNP
NPN
0
2. 0
I. 8
8
6
6
;;;
4
:;1
4
2
:;:;1
2
~
0
VSE(s.tl @ IC/~
'"~1 0
.-
VSE(,nl @ VCE
2.0 V
50
100
lOA
200
500
IC. COLLECTOR CURRENT (rnAI
t--"L
20A
2
0
40A
VCE(s.tl
II 11111 I
:;
II 11111 I
~O 8
\
07
TJ = 25°C
\
0.6
t::
IC = 500 rnA
IC = 20 A
g 02
o05
Vi 09
III! II I
<:>
1111 II I
:;
2- 08
06
'"t=
05
<:>
03
!ildo
8
t01 02
ui
:!>'
0 5 10 2 0
@I,c~'! 1\d_
20 A
4.0 A
5 0 10
20
50 100 200 500
IS. BASE CURRENT (rnAI
lIlILl1 11111 II 1\ I 11111 I
[111 11111 II I I 11111 I
JlI
IC: 10 rnA
07
~
~
G
01
10
'"«
::0 0 5
u
ui
~
PNP
;;;0 9
:!>' 0
r--
FIGURE 6 - MPS750. MPS761
COLLECTOR SATURATION REGION
NPN
10
IC = lOrnA Ic=100rnA
20 V
lOA
200
500
IC. COLLECTOR CURRENT IrnAI
100
50
FIGURE 5 - MPS650. MPS651
COLLECTOR SATURATION REGION
03
@VCE
111111
4
~ IC/I~ = 10~ r--
V6Eis;tl
2
g;
VSE(,nl
6
'11111
4
04
@IC/I~
> 08
,;
6
!il
VSEls.tl
<:>
8
~>
\
"-
25
o
t5
•
\
_55°C
~ 75
30
0
\
I
25°C
~ 150
I~
~
12 0::::::
I
z
~17 5
\
[..--"
V~E ~ 2b Vi
TJ = 125°C
200
2~Oc'.
18 O~
150
~ 90
225
TJ = 125°C
~ 210
~
V~E ~ 2b Vi
I
270
'"
~
PNP
250
IC: 100 rnA
,
I
I
IC = 2 0 A
-
i
04
TJ: 25°C
I
02
,..
I
01
0
005
o1
0.2
0 5 1 0 2 0 5 0 10 20
IS. SASE CURRENT (mA I
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-169
IC: 500 rnA
50 100 200
500
MPS650, MPS651 NPN, MPS750, MPS751 PNP
•
FIGURE 7 - MPS650. MPS651 SOA.
SAFE OPERATING AREA
FIGURE 8 - MPS750. MPS751 SOA.
SAFE OPERATING AREA
NPN
PNP
10
4.0
~ 2. 0
ais
'"
1. 0
I
1.0 ms
,
t-t--
f\\0~ ~s
MPS650
05
t;
;j 0.2 ~TA-25O~
S
MPS651
I .1
. ~C - 25°C
~ O. 1
0.05
0.02
0.0 1
1.0
----2.0
Wire limit
Thermal limit
...
005
Wirellrnit
......
002
Second Breakdown Limit
50
10
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
50
Thermal limit
- - - Second Breakdown limit
=t::t='Pct:t:l=l::t1::l
0.01 L-~~_ _~_~~_...L-L_L-.L...L.>L..LJ..LJ
10
20
5.0
10
20
50
100
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
100
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-170
MPS918
MPS3563
MAXIMUM RATINGS
Rating
Symbol
MPS918 MPS3563
Unit
Collector-Emitter Voltage
VCEO
15
12
Vdc
Collector-Base Voltage
VCBO
30
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Collector Current -
Continuous
2.0
Vdc
IC
50
mAdc
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
1.5
12
Watt
mWrC
TJ, Tstg
-55 to +150
·C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
~~'-
."
3
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
R8JC
83.3
.c/w
R8JA(l)
200
'CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPNSILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 3.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 1.0 pAde, IE = 0)
(lc = 100 pAde, IE = 0)
V(BR)CEO
3.0
2.0
-
10
50
20
20
200
VCE(sat)
-
0.4
Vde
VBE(sat)
-
1.0
Vde
15
12
V(BR)CBO
MPS918
MPS3563
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
30
30
V(BR)EBO
MPS918
MPS3563
Collector Cutoff Cu rrent
(VCB = 15 Vdc, IE = 0)
Vdc
-
MPS918
MPS3563
ICBO
MPS918
MPS3563
Vde
Vde
nAde
ON CHARACTERISTICS
DC Current Gain(2)
(lc = 3.0 mAde, VCE = 1.0 Vde)
(lC = 8.0 mAde, VCE = 10 Vde)
MPS918
MPS3563
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
MPS918
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
MPS918
hFE
-
-
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 4.0 mAde, VCE = 10 Vde, I = 100 MHz)
(lC = 8.0 mAde, VCE = 10 Vde, I = 100 MHz)
MPS918
MPS3563
Output Capacitance
(VeB = 0 Vde, IE = 0, I = 140 kHz)
(VeB = 10 Vde, IE = 0, I = 140 kHz)
(VeB = 10 Vde, IE = 0, I = 1.0 MHz)
MPS918
MPS918
MPS3563
Input Capacitance
(VEB = 0.5 Vde, Ie = 0, f = 140 kHz)
MPS918
Small-Signal Current Gain
(lC = 8.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
MPS3563
Noise Figure
(lC = 1.0 mAde, VCE = 6.0 Vde, RS = 400 ohms, I = 60 MHz)
MPS918
tr
Cobo
Cibo
-
hIe
NF
(1) R8JA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width", 300 p£, Duty Cycle'" 1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-171
600
600
-
MHz
1500
pF
3.0
1.7
1.7
2.0
pF
20
250
-
-
6.0
dB
•
MPS918, MPS3563
ELECTRICAL CHARACTERISTICS (continued) (TA = 25·C unless otherwise noted.)
Characteristic
•
.
I
Symbol
Min
Max
Unit
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
(lC = 6.0 mAde, VCB = 12 Vdc, f = 200 MHz)
(lC = 8.0 mAde, VCE = 10 Vdc, f = 200 MHz)
(Gfd + Gre < -20 dB)
Power Output
(lC = 8.0 mAde, VCB
=
15 Vdc, f
= 500 MHz)
Oscillator Collector Efficiency
(lC = 8.0 mAde, VCB = 15 Vdc, Pout
= 30 mW, f = 500 MHz)
Gpe
dB
15
14
-
Pout
30
-
mW
'1
25
-
%
MPS918
MPS3563
MPS918
MPS918
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-172
MPS929
MPS930A
MAXIMUM RATINGS
Rating
I
Symbol
MPS929 MPS930A
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Emitter-Base Voltage
VEBO
5.0
Collector Current -
Continuous
I
I
60
Vde
6.0
Vde
IC
100
mAde
Total Device Dissipation @ TA
Derate above 25"C
=
25"C
Po
625
5.0
mW
mWfC
Total Device Dissipation @ TC
Derate above 25"C
=
25"C
Po
1.5
12
Watts
mWfC
TJ, Tstg
-55to +150
"C
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
RruC
83.3
"CIW
Thermal Resistance, Junction to Ambient
RruA
200
"CIW
Unit
NPNSILICON
Refer to MPS3903 for additional graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
45
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 /LAde, IC = 0)
-
-
2.0
-
10
2.0
MPS929
MPS930A
-
10
2.0
MPS929
MPS930A
-
10
2.0
-
10
2.0
ICEO
ICBO
MPS929
MPS930A
Collector Cutoff Current
(VCE = 45 Vde, VBE = 0)
= 45 Vde, VBE =
0, TA
ICES
=
125"C)
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
MPS929
MPS930A
Vde
-
5.0
6.0
MPS929
MPS930A
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
-
Vde
Vde
V(BR)EBO
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
(VCE
45
60
MPS929
MPS930A
-
nAde
nAde
nAde
/LAde
nAde
ON CHARACTERISTICS
DC Current Gain(l)
(lc = 1.0 !lAde, VCE
(lc
=
10 /LAde, VCE
-
hFE
= 5.0 Vde)
MPS930A
60
-
= 5.0 Vde)
MPS929
MPS930A
40
100
120
300
(lC
= 10 !lAde, VCE = 5.0 Vde, TA = -55"C)
MPS929
MPS930A
10
30
-
(lc
= 500 /LAde, VCE = 5.0 Vde)
MPS929
MPS930A
60
150
-
(lC
=
MPS929
MPS930A
-
-
350
600
10 mAde, VCE
= 5.0 Vde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-173
MPS929, MPS930A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted)
Symbol
Characteristic
II
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAdc, IB = 0.5 mAdc)
Min
Unit
-
1.0
0.5
0.6
0.7
1.0
0.9
30
45
-
-
8.0
6.0
hib
25
32
Ohms
hrb
-
600
X 10-6
60
150
350
600
-
1.0
-
4.0
3.0
MPS929
MPS930A
Base-Emitter Saturation Voltage(l)
(lc = 10 mAde, IB = 0.5 mAdc)
Max
Vdc
VCE(sat)
Vdc
VBE(sat)
MPS929
MPS930A
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 /-'Adc, VCE = 5.0 Vdc, f
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
= 30 MHz)
MHz
pF
Cobo
MPS929
MPS930A
1.0 MHz)
Input Impedance
(IE = 1.0 mAdc, VCB
= 5.0 Vdc, f ,=
1.0 kHz)
Voltage Feedback Ratio
(IE = 1.0 mAdc, VCB
= 5.0 Vdc, f =
1.0 kHz)
Small-Signal Current Gain
(lC = 1.0 mAdc, VCE = 5.0 Vdc, f
=
1.0 kHz)
Output Admittance
(IE = 1.0 mAde, VCB
=
1.0 kHz)
=
fr
MPS929
MPS930A
5.0 Vde, f
-
hfe
MPS929
MPS930A
hob
Noise Figure
(lC = 10 /-'Ade, VCE = 5.0 Vde,
RS = 10 kohms, f = 10 Hz to 15.7 kHz)
p.mho
NF
dB
MPS929
MPS930A
-
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
TYPICAL CHARACTERISTICS
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
1.0
3.0
~
~
TVPIC'lhFE@IC:500MAIIIIIII
2.0
;;;:
~
z
~
1.0
ia
_
0.7
c
0.5
u
~
"","
-
TJ~
--
1~5IJ~
o. S
TIFI2~O~
r I-II
I III
VBE(sat)
Ic/IB: 10
6
ii++t-
III
I
VBE(on)@VCE - 5.0 V
4
-55°C
"...
I---
........
0.3 ,
0.D1 0.02
0.05 0.1
0.2
0.5
1.0
vrnl
2.0
5.0
o. 2
10
20
VCE(sat)@ IC/ls: 10
0
0.01 0.02 0.05 0.1 0.2
50 100
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (rnA)
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-174
10
20
50 100
MPS929, MPS930A
FIGURE 3 - COLLECTOR SATURATION REGION
~ 1.0
\
0>
'"
~
«
II
II
O. B
~
0>
>
~
Ic=3.0mA lOrnA
~
cl
o
0.01
t---
\
8~ o.1 ,
""- '-
\
0.02
0.05
01
11
lOOmA
1\
\
;;
~ O. 4
>
SOmA
30mA
0.6
FIGURE 4 - TEMPERATURE COEFFICIENTS
TJ = 15'C
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
FIGURE 5 - CURRENT-GAIN - BANDWIDTH PRODUCT
~
~
30 0
'"
200
~
0
\'CE=5.0V
TJ = 25'C
~_
~
FIGURE 6 - CAPACITANCES
500
TJ - 25'C
7. 0
V
~
l""'-
....- VI--
i'-
r-..
I'
./
;;;
0
rr--
~ib
r------
0
I
~ 10oV
'"
0
.t'
0
0.5
!;;
I:
0
0.7
1.0
1.0
3.0
5,0
7.0
10
10
30
1. 0
0.1
50
l~
0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2·175
20
t--50
100
MPS2222
MPS2222A*
MAXIMUM RATINGS
Rating
Symbol MPS2222 MPS2222A
Unit
Collector-Emitter Voltage
VCEO
30
40
Vde
Collector-Base Voltage
VCBO
60
75
Vde
Emitter-Base Voltage
VEBO
5.0
6.0
Vde
IC
600
mAde
Total Device Dissipation @ TA = 25"<:
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25"<:
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
.:.()
1 Emitter
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Thermal ReSistance, Junction to Case
RWC
83.3
Unit
0c/w
Thermal Resistance, Junction to Ambient
RWA
200
°CIW
Characteristic
ELECTRICAL CHARACTERISTICS
(TA
= 25°C unless otherwise
NPNSILICON
noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERIST1CS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 /'Ade, IE = 0)
=
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA
(VCB = 50 Vde, IE = 0, TA
MPS2222
MPS2222A
ICEX
3.0 Vde)
MPS2222A
=
=
MPS2222
MPS2222A
MPS2222
MPS2222A
ICBO
125°C)
125°C)
=
-
60
75
-
5.0
6.0
-
Vde
-
10
Vde
nAde
/'Ade
-
lEBO
-
IBL
MPS2222A
-
40
V(BR)EBO
MPS2222
MPS2222A
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
Base Cutoff Current
(VCE = 60 Vde, VEB(off)
30
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 /'Adc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vde, VEB(off)
Vde
V(BR)CEO
MPS2222
MPS2222A
0.01
0.01
10
10
10
nAde
-
20
nAde
35
50
75
35
100
50
30
40
-
MPS2222A
3.0 Vde)
ON CHARACTERISTlCS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 10 mAde, VeE = 10 Vde, TA = -55°C)
(lC = 150 mAde, VeE = 10 Vde)(1)
(lC = 150 mAde, VeE = 1.0 Vde)(1)
(lC = 500 mAde, VeE = 10 Vde)(1)
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lC
= 500 mAde, IB =
50 mAde)
-
hFE
MPS2222A only
MPS2222
MPS2222A
VCE(sat)
MPS2222
MPS2222A
MPS2222
MPS2222A
"Also available as a PN2222,A.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-176
-
-
300
-
Vde
-
-
0.4
0.3
1.6
1.0
MPS2222, MPS2222A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, 'B = 15 mAde)
Min
VBE(sat)
(lc = 500 mAde, IB = 50 mAde)
Max
Unit
Vdc
-
MPS2222
MPS2222A
0.6
1.3
1.2
MPS2222
MPS2222A
-
2.6
2.0
250
300
-
-
8.0
-
30
25
2.0
0.25
8.0
1.25
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 20 mAde, VCE = 20 Vde, 1= 100 MHz)
fr
MPS2222
MPS2222A
Output Capacitance
(VCB = 10 Vdc, 'E = 0, I = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vde, IC = 0, f = 1.0 MHz)
Cibo
MPS2222
MPS2222A
Input Impedance
(lc = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
MPS2222A
MPS2222A
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
MPS2222A
MPS2222A
Small-Signal Current Gain
(lc = 1.0 mAde, VCE = 10 Vdc, 1= 1.0 kHz)
(lc = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
MPS2222A
MPS2222A
Output Admittance
(lc = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lc = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
MPS2222A
MPS2222A
Collector Base Time Constant
(IE = 20 mAde, VCB = 20 Vde, I = 31.8 MHz)
MPS2222A
Noise Figure
(lC = 100 ~de, VCE = 10 Vdc, Rs = 1.0 kG, 1= 1.0 kHz)
MPS2222A
Rise Time
Storage Time
Fall Time
pF
pF
k!l
hie
X 10- 4
hre
-
8.0
4.0
50
75
300
375
5.0
25
35
200
rb'C e
-
150
ps
NF
-
4.0
dB
(VCC = 30 Vde, VBE(off) = 0.5 Vde,
IC = 150 mAdc,lBl = 15 mAde) (Figure 1)
td
-
10
ns
tr
25
ns
(VCC = 30 Vde,lc = 150 mAde,
ISl = IS2 = 15 mAde) (Figure 2)
ts
-
225
ns
tf
-
60
ns
SWITCHING CHARACTERISTICS
Delay Time
MHz
-
hie
I'mhos
hoe
MPS2222A only
(1) Pulse Test: Pulse Width", 300 1'", Duty Cycle'" 2.0%.
(2) fr is delined as the Irequency at which Ihlel extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 2 - TURN-QFF TIME
FIGURE 1 - TURN-ON TIME
+30 V
20:
-!
+'60V~
L
-T-
:Cs·
< 10pF
-
Scope Rise Time
<4
-<20ns
,,
-'--T -
1k
:Cs*<10pF
___ 4
1N914
ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-177
200
CYCLE'" 2%
I
-14 V
___ J
+30 V
1- 1.0 to 100 /.Ls, DUTY
-4 V
•
MPS2222, MPS2222A
FIGURE 3 - DC CURRENT GAIN
II
1000
700
500
TJ
~
moc
z
;;: 300
'"
~0:
100
G
-
~
I I
70
50
u
0
~
30
-'- -
10
0,1
0,2
0,3
05
0,7
1.0
2,0
VCE
VCE
-
I I
3,0
50
- --
~
1.0 V
10 V
III
),0
~
~ -.::"-b
'-- --
-55°C
20
~
=
25°C
200
I-
10
20
30
50
70
200
100
300
500
700 1.0 k
IC, COLLECTOR CURRENT (mA)
FIGURE 4 - COLLECTOR SATURATION REGION
~
1.0
TJ
~
25°C
o
~
o.8
>
0, 6f-
'"
~
o
0:
Ic~l,omA
150mA
10 rnA
~
~
~
O. 4
~
0, 2
~
~
>
1500mA
1\
\
W
0
0,005
-
0,01
\
0,02
0,03
\
\
\
\
I\,
r-.
..... t-r-
I'
0.05
0.1
0.2
0.3
0,5
1.0
2,0
3,0
5,0
10
20
30
50
IB, BASE CURRENT (mA)
FIGURE 5 - TURN·ON TIME
FIGURE 6 - TURN·OFF TIME
200
100
70
50
]:
30
~
20
;=
ICIIB
TJ
"
~
~
500
10
25°C
..........
1,@VCC~30V
-Id@ VEB(olf) ~ 2.0 V_ _
Id@VEB(olf)=O
.......
"'-
~
"' ..........
0
0
"'
If
30
0
7,0
5.0
3,0
........
10
20
30
50
70
100
i"-,.
200
.......
300
500
IC, COLLECTOR CURRENT (mA)
0
7, 0
5. 0
5,0 70
10
20
30
"-
50
70
100
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-178
~} : ~~~C
.......
100
!w
"i=
r-.....
--
I": Is _llIB If
20 0
10
2.0
5,0 7.0
VCC 30 V
ICIIB = 10
300
200
300
500
MPS2222, MPS2222A
FIGURE 8 - SOURCE RESISTANCE EFFECTS
FIGURE 7 - FREQUENCY EFFECTS
10
10
IIII
\\
S.O
~
~
'"
60
'1111
Illttl
~
IIII
200 <>
50 "A. RS
~
II
II
RS ~ OPTIMUM
SOURCE
RESISTANCE
100"A.RS~20k<>
~
'"u:
II
500 "A. RS
,~
w
=>
II
IC= 1 0 mA, RS::: 150n
SO
~
'"=>
4.0 k<>
60
~
~
~
4.0
4.0
/
~.
"
"
~
20
~
2.0
o
0.05 0.1
0.2
0.5 1.0
2.0
5.0 10
20
50
50 100
0
I
I
-
I
I
Ji
'--...
y
w
10
"'"
100
V
200
500 1.0k 20k
7.0
TJ
~ 50
~
25°C
0
I
0.2 03
0.5
1.0
2.0 3.0
50
10
20 30
./
0
50
2.0
REVERSE VOLTAGE (VOLTSI
IIIII I
II II IIIII I
O.S
11.11.111.111 1.1
~
~ 0.6
w
'"
;'!:
c;
iSilj'ltllrC/lt 10
~
~
50
70 100
11 I I
Rille for VCE(sat)
3> -0.5
.§
f-
51
-1.0
$
-1.5
0:;
8
0.2
0.5 1.0
30
'-'
>
0.2
11111
V10V
>'
0.1
20
10
III
0.4
o
7.0
FIGURE 12 - TEMPERATURE COEFFICIENTS
~@IJ~~[~l~~
VCE("')@ Ic/la ~ 10
5.0
+0.5
TJ ~ 25'C
u;
3.0
IC. COLLECTOR CURRENT ImA)
FIGURE 11 - "ON" VOLTAGES
1.0
V
0
Ccb
r--- N--L
2.0
0.1
50k lOOk
".
)/
3.0
20k
0
0:;
;3
5.0k 10k
r-- VCEI~ 20 Iv
'-'
f-
V I
1"-
' - Ceb
~
I
'/
FIGURE 10 - CURRENT·GAIN BANDWIDTH PRODUCT
I
r-
V
LOrnA
RS. SOURCE RESISTANCE IOHMS)
FIGURE 9 - CAPACITANCES
20
/
500 "A
f. FREOUENCY (kHzl
30
•
V
IIII
~
o
0.01 002
1111
100~A
a
w
~
~HII
IC~50"A
-
'"u:
w
I II
folO
2.0
5.0 10 20
50 100 200
IC. COLLECTOR CURRENT (rnA)
RIII~,forVaE
-2.0
V-
-2.5
0.1 0.2
500 10k
11111
0.5
1.0 2.0
5.0 10
20
50 100
Ie. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-179
200 500
MPS2369
•
CASE 29-04, STYLE 1
TO-92 (TO·226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Emitter Voltage
VCES
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter·Base Voltage
VEBO
4.5
Vde
IC
500
mAde
PD
625
5.0
mW
mWI"C
TJ, Tstg
-55 to +150
"C
Collector Current -
Continuous
=
Total Device Dissipation @ TA
Derate above 25"C
25"C
Operating and Storage Junction
Temperature Range
3 Collector
~~
, Emitter
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
15
-
-
Coliector·Emitter Breakdown Voltage
(lC = 10 J£Ade, VBE = 0)
V(BR)CES
40
-
Collector-Base Breakdown Voltage
(lC = 10 J£Ade, IE = 0)
V(BR)CBO
40
-
-
Emitter·Base Breakdown Voltage
(IE = 10 J£Ade, IC = 0)
V(BR)EBO
4.5
-
-
-
-
-
0.4
30
40
20
20
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 20 Vde, IE = 0, TA
ICBO
=
125"C)
Vde
Vde
Vde
Vde
J£Ade
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vdc, TA
(lC = 100 mAde, VCE = 2.0 Vde)
-
hFE
=
-55"C)
120
-
Collector-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
-
0.25
Vde
Base·Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
0.70
-
0.85
Vdc
Cobo
-
-
4.0
pF
hfe
5.0
-
-
-
5.0
13
ns
8.0
12
ns
10
18
ns
SMALL·SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
1.0 MHz)
Small·Signal Current Gain
(lc = 10 mAde, VCE = 10 Vde, f
=
100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(lBl = IB2 = IC
ts
=
Turn·On Time
(VCC = 3.0 Vde, IC
10 mAde)
=
(Figure 3)
ton
10 mAde, IBI
=
3.0 mAde)
Turn·Off Time
(VCC = 3.0 Vde, IC = 10 mAde, IBI
IB2 = 1.5 mAde) (Figure 2)
=
3.0 mAde,
(Figure 1)
toff
-
(1) Pulse Test: Pulse Width"" 300 p.S, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-180
MPS2369
FIGURE 1 - ton CIRCUIT
3.0 V C>--JVl.I'v--..,
270 _..J~~3.3 k
PULSE WIDTH (111 = 300 ns
DUTY CYCLE = 2.0%
FIGURE 2 - toft CIRCUIT
~ 11
I--
+10~:~7
3.0 V C>--'\o/V'vo----.
270
-4.15V-- I -
t--- < 1.0ns
3.3 k
PULSE WIDTH (111 = 300 ns
DUTY CYCLE = 2.0%
FIGURE 3 - STORAGE TEST CIRCUIT
+~:]-if:
- 4.0 V
< 1.0 ns
I--
980 _ J -_ _
10'
I
>-_o/VI~+-I
500
_.L_
-T,
_J CS" < 3.0 pF
PULSE WIDTH (111 = 300 ns
DUTY CYCLE = 2.0%
"TOTAL SHUNT CAPACITANCE OF TEST JIG AND CONNECTORS.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-181
•
•
MPS2907
MPS2907A
MAXIMUM RATINGS
Rating
Symbol MPS29071 MPS2907A
40
I
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
Vde
IC
SOO
mAde
Collector Current -
Continuous
SO
Unit
Collector-Emitter Voltage
Vde
Total Device Dissipation @ TA
Derate above 25·C
=
25·C
Po
S25
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25·C
=
25·C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to+150
·C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Vde
SO
3 Collector
~()
1 Emitter
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characterletic
Rf/JC
83.3
·C/W
Thermal Resistance, Junction to Ambient
Rf/JA
200
·C/W
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Characterietic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
Vde
60
-
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
-
50
nAde
MPS2907
MPS2907A
-
0.020
0.010
MPS2907
MPS2907A
-
20
10
Collector Cutoff Current
(VCE = 30 Vde, VBE(off)
40
ICEX
= 0.5 Vde)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB
MPS2907
MPS2907A
ICBO
= 50 Vde, IE = 0, TA =
Base Current
(VCE = 30 Vde, VBE(off)
125·C)
IB
pAde
50
nAde
= 0.5 Vde)
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE
hFE
=
10 Vde)
MPS2907
MPS2907A
35
75
(lC
= 1.0 mAde, VCE =
10 Vde)
MPS2907
MPS2907A
50
100
(lc
=
10 Vde)
MPS2907
MPS2907A
75
100
10 mAde, VCE
=
(lC
= 150 mAde, VCE =
10 Vde)(1)
MPS2907, MPS2907A
100
(lC
= 500 mAde, VCE =
10 Vde)(I)
MPS2907
MPS2907A
30
50
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 16 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Seturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
2-182
-
-
-
-
300
-
Vde
-
0.4
I.S
-
1.3
2.S
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
-
Vde
MPS2907, MPS2907A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
for
200
-
Output Capacitance
(VCS = 10 Vdc, IE = 0, 1= 1.0 MHz)
Cobo
-
8.0
pF
Input Capacitance
(VSE = 2.0 Vdc, IC = 0, I = 1.0 MHz)
Cibo
-
30
pF
ton
-
45
ns
td
-
10
ns
tr
-
40
ns
tolf
-
100
ns
80
ns
30
ns
Max
Unit
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Sandwidth Product(l ),(2)
(lC = 50 mAdc, VCE = 20 Vdc, 1= 100 MHz)
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC = 150 mAdc,
ISl = 15 mAdc) (Figures 1 and 5)
Delay Time
Rise Time
Turn-Olf Time
(Vec = 6.0 Vdc, IC = 150 mAdc,
ISl = IS2 = 15 mAde) (Figure 2)
Storage Time
-
ts
Fall Time
tl
(1) Pulse Test: Pulse Width .. 300 /AS, Duty Cycle .. 2.0%.
(2) for is defined as the Irequency at which Ihlel extrapolates to unity.
FIGURE 1 - DELAY AND RISE
TIME TEST CIRCUIT
INPUT
Zo=500
PRF = 150 PPS
RISE TIME .. 2.0 ns
P.W. < 200 ns
FIGURE 2 - STORAGE AND FALL
TIME TEST CIRCUIT
INPUT
Zo=500
PRF = 150 PPS
RISE TIME .. 2.0 ns
P.w. < 200 ns
-30V
200
1.0 k
+15 V
-6.0 V
1.0 k
37
1.0 k
TO OSCILLOSCOPE
RISE TIME .. S.O n.
TO OSCILLOSCOPE
RISE TIME .. 5.0 n.
so
50
TYPICAL CHARACTERISTICS
FIGURE 3 - DC CURRENT GAIN
-'-T--'- _.- .. roo
3.0
f - - _ VCE=I.OJ
2.of----- VCE = 10 V
..
-
I. 0
o. 7
o. 5
- 1--11-1-
--
1-
-
rtt5tt
-
..
-I-
G-
25'C
t--.,.
l - f-
- -
- - -
-
f---
..
-55'C'
-....
f-
l- I -
..
t--..
I-
o.3
O. 2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-183
100
-"
200
1\
1'--,1\
300
500
•
MPS2907, MPS2907A
FIGURE 4 - COLLECTOR SATURATION REGION
1.0
•
\
O.S
IC = 1.0 rnA
O. 6
\
100mA
lOmA
500 rnA
\
-
"'-
0.4
I\",
o. 2
---
I'---
0.005
0.01
0.02
0.03
"'-
r-
t--
0.05 0.07 0.1
0.2
0.3
0.5 0.7
2.0
1.0
~
3.0
5.0 7.0
10
20
30
50
IS SASE CURRENT (mA)
FIGURE 5 - TURN-ON TIME
FIGURE 6 - TURN-OFF TIME
500
30
Or-.
200
,"
100
0
0
!w
vcc=3dv
IC/IS = 10
TJ
" .........
0
'"'
;::
20
t-
Id@VSE(off)=OV
10
7. 0
'5.0
==
2,"QC
--
300
200
!w
10O
0
0
;::
0
.
-
./
5.0 7.0
10
20
30
50
70
200
100
300
"
t5'= ts-1I8
.....
tt
---
0
0
2.0V- r - -
3.0
VCC=30V
IC/IS = 10 -IIS1=IS2 -CTJ=2S·C
If
7.0
5.0
5.0 7.0
500
20
10
30
50
70
100
200
300
IC, COLLECTOR CURRENT (rnA)
IC, COLLECTOR CURRENT
TYPICAL SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE ~ 10Vdc, TA - 26·C
FIGURE 8 - SOURCE RESISTANCE EFFECTS
FIGURE 7 - FREQUENCY EFFECTS
0
0
S.0
S.0
..
f11.~ k~Z
\
§
J
w
::>
~
6. o \
w
'"oz
4. 0
.:
z
2.0
\
IC= 1.0mA.Rs=430G
500 pA, Rs 560 G
50 pA, Rs 2.7 kG
100pA, Rs= 1.6 kG
6.0
IC = 50 pA
4.0
~ J~~:~~M ~ciu~cIEI RESISTANCE
til jllllU
I I
111111i"
I I
2. 0
1
1\1-'"
,\[).c.--"...
-<~
IDOpA
500pA
1.0mA
d.11JY:t::
V
1/ V
/.
V-
~
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
r-
0
50
50 100
100
200
III
500 1.0k 2.0k
R~SOURCE
f, FREQUENCY (kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-184
5.0k 10k 20k
RESISTANCE (OHMS)
SDk
500
MPS2907, MPS2907A
FIGURE 9 - CAPACITANCES
..,
30
"
~
t-
O
t---
t-
Cob
FIGURE 10 - CURRENT·GAIN - BANDWIDTH PRODUCT
400
0
\
l/
'"
0
1\
1001/
a0
7. 0
Ccb
5. 0
Of-
VCE"20V
TJ" 25"C
i-
I"-
3. 0
II
0
2. 0
0.1
.t0.2 0.3
0.50.7 1.0
2.0 3.0
5.0 7.0 10
20 30
20
1.0
2.0
5.0
i/"12~~~1J
e-
10
I II 11111
II
11111
11111111
I
V
200
500 1000
II
II
-0.5
I
I1111
VBE(,n)@VCE" 10 V
i==
100
RINC for VCE/sal)
i-I··j· I I II I IL.-l0.6
50
FIGURE 12 - TEMPERATURE COEFFICIENTS
+0. 5
Ii 11111111 I
VaE(sat)@IClla" 10
20
IC. COLLECTOR CURRENT (mA)
FIGURE 11- "ON" VOLTAGE
O. a
I
III
REVERSE VOLTAGE (VOLTS)
1.0
•
300
-1.0
0.4
-1.5
O. 2
-2.0
RlNafOr~~E
VCE(sat)@IC/IB - 10
o
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
-2.5
0.1 0.2
500
11111111
0.5
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mA)
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-185
50 100 200 500
•
MPS3390, MPS3391,
MPS3396
thru MPS3398
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
IC
100
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
,I·~~'-'
23
1 Emitter
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to ZN3903 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
V(BR)CEO
25
-
V
Collector Cutoff Cu rrent
(VCB = 1S Vdc, IE = 0)
ICBO
-
0.1
pA
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
lEBO
-
0.1
pA
400
250
90
55
55
SOO
500
500
500
SOO
-
10
400
250
90
55
55
1250
SOO
SOO
SOO
1250
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 4.5 Vdc, IC
=
hFE
MPS3390
MPS3391
MPS3396
MPS3397
MPS339S
2.0 mAde)
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f
=
Cobo
1.0 MHz)
Small-Signal Current Gain
(VCE = 4.5 V, IC = 2.0 mA, f
=
hfe
1.0 kHz)
MPS3390
MPS3391
MPS3396
MPS3397
MPS339S
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-186
pF
-
MPS3403
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
VEBO
5.0
Vdc
IC
500
mA
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
625
5.0
mW
mWFC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.5
12
Watts
mWFC
TJ, Tstg
-55to +150
·C
Rating
Emitter-Base Voltage
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R/lJC
83.3
'CIW
Thermal Resistance, Junction to Ambient
R/IJA
200
'CIW
Charac:laristic
NPN SILICON
Refer to MPS8098 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Charac:leristlc
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAl
V(BR)CEO
25
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 /'A)
V(BR)CBO
25
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 /'A)
V(BR)EBO
5.0
-
Vdc
-
-
100
15
/'A
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 18V)
(VCB = 18V, TA = 100'C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 V)
lEBO
-
100
nA
hFE
180
540
-
nA
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mA. VCE
=
4.5 V)
Collector-Emitter Saturation Voltage
(lC = 50 mA. IB = 3.0 mAl
VCE(sat)
-
0.3
Vdc
Base-Emitter Saturation Voltage
(lC = 50 mA, IB = 3.0 rnA)
VBE(sat)
0.6
1.3
Vdc
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(lC = 2.0 rnA. VCE = 4.5 V, f
(lc = 2.0 rnA. VCE = 4.5 V, f
=
=
1.0 kHz)
1.0 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-187
MPS3563
For Specifications, See MPS918 Data
MPS3566
MAXIMUM RATINGS
•
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAdc
mW
mWI'C
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Po
625
5.0
Total Power Dissipation @ TA
= 6O'C
= 25'C
Po
450
mW
PD
1.5
12
Watts
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
CASE 29-04. STYLE 1
TO-92 (TO-226AA)
'c
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resiatance, Junction to Case
RruC
83.3
'CIW
Thermal Resistance, Junction to Ambient
RruA
200
'CIW
Characteristic
NPNSILICON
Refer to 2N4400 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Symbol
Min
V(BR)CEO(sus)
Collector-Base Breakdown Voltage
(lC = 100 pAl
Emitter-Base Breakdown Voltage
(IE = 10 pAl
Charactaristic
Max
Unit
30
.-
Vdc
V(BR)CBO
40
-
Vdc
V(BR)EBO
5.0
-
. Vdc
. OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 30 mAl
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 75'C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 V)
lEBO
-
50
5.0
nA
pA
10
pA
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mA, VCE
(lc = 2.0 mA, VCE
hFE
= 10 V)
= 10 V)
150
80
600
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mA. IB = 10 mAl
VCE(sat)
-
1.0
Vdc
Base-Emitter On Voltage(l)
(lC = 100 mA, VCE = 1.0 V)
VBE(on)
-
0.9
Vdc
Cobo
-
25
pF
2.0
35
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Small-Signal Current Gain
(lC = 30 mA, VCE = 10V, f
hfe
= 20 MHz)
(1) Pulse Test: Pulse Width .. 300 !LS. Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-188
MPS3567
MPS3568
MPS3569
MAXIMUM RATINGS
MPS356!IMPS3568
Symbol MPS3569
Rating
Unit
60
VCEO
Collector-Base Voltage
VCBO
80
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Collector Current -
Continuous
40
I
Collector-Emitter Voltage
Vde
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
PD
1.5
12
Watts
mWrC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
•
Vde
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
1 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R(lJC
83.3
0c/w
Thermal Resistance, Junction to Ambient
R(lJA
200
°CIW
Characteristic
AMPLIFIER TRANSISTOR
NPN SILlCQN
Refer to 2N4400 for graphs for MPS3567, 3569.*
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
(lC = 30 mAde, IB = 0)
VCEO(sus)
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
80
-
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
-
50
5.0
nAde
pAde
25
nAde
MPS3567, MPS3568
MPS3569
40
100
-
-
MPS3567, MPS3568
MPS3569
40
100
120
300
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vde, IE = 0, TA
MPS3567, MPS3569
MPS3568
40
60
ICBO
= 75°C)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
Vde
Vde
ON CHARACTERISTICS")
DC Current Gain
(lC = 30 mAde, VCE
(lC
=
150 mAde, VCE
=
hFE
1.0 Vde)
=
1.0 Vdc)
-
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.25
Vde
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
1.1
Vde
IT
60
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
= 0, f =
Cobo
Cibo
1.0 MHz)
"Refer to MPS8098 for graphs for MPS3568.
(1) Pulse Test: Pulse Width", 300/Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-189
-
20
pF
80
pF
MPS3638
MPS3638A
MAXIMUM RATINGS
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vde
Collector-Emitter Voltage
VCES
25
Vde
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
40
Vde
Rating
IC
500
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Collector Current -
Continuous
PD
625
5.0
mWrC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
PD
1.5
12
mWrC
-55to +150
·C
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
mW
3 Collector
~{Q
Watts
1 Emitter
THERMAL CHARACTERISTICS
Charaeteristie
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
SWITCHING TRANSISTOR·
RIIJC
83.3
'CIW
PNPSILICON
RIIJA(l)
200
'CIW
(1) RIIJA is measured with the device soldered into a typical printed circuit board.
Refer to 2N4402 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 100 !lAde, VBE = 0)
V(BR)CES
25
Collector-Emitter Sustaining Voltage(l)
(lc = 10 mAde, IB = 0)
VCEO(sus)
25
-
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
25
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
V(BR)EBO
4.0
-
Vde
Charaeteristie
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 15 Vde, VBE = 0)
(VCE = 15Vde, VBE = 0, TA
ICES
=
-65'C)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
Base Current
(VCE = 15 Vde, VBE
lEBO
IB
=
0)
-
Vde
Vde
!lAdc
0.035
2.0
35
nA
0.035
!lAde
ON CHARACTERISTlCS(1)
DC Current Gain
(lC = 1.0 mAde, VCE
hFE
(lC
=
10 mAde, VCE
=
10 Vde)
MPS3638
MPS3638A
20
100
(lC
=
50 mAde, VCE
=
1.0 Vde)
MPS3638
MPS3638A
30
100
-
(lc
= 300 mAde, VCE =
MPS3638
MPS3638A
20
20
-
=
10 Vde)
MPS3638A
80
2.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 2.5 mAde)
(lC = 300 mAde, IB = 30 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 2.5 mAde)
(lC = 300 mAde, IB = 30 mAde)
VBE(sat)
Vde
0.25
1.0
-
1.1
2.0
Vde
0.80
2-190
-
-
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
-
MPS3638, MPS3638A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 3.0 Vde, IC = 50 mAde, f
=
MPS3638
MPS3638A
100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
1.0 MHz)
MPS3638
MPS3638A
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
1.0 MHz)
MPS3638
MPS3638A
Input Impedance
(lC = 10 mAde, VCE
=
-
-
20
10
-
65
25
-
2000
-
26
15
25
100
-
hoe
-
1.2
mmhos
td
-
20
ns
tr
-
70
ns
140
ns
Cibo
hie
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vde, f
=
1.0 kHz)
MPS3638
MPS3638A
Small-Signal Current Gain
(lC = 10 mAde, VCE = 10 Vdc, f
=
1.0 kHz)
MPS3638
MPS3638A
Output Admittance
(lC = 10 mAde, VCE
=
1.0 kHz)
10 Vde, f
MHz
100
150
Cobo
10 Vde, f
=
tr
h re
pF
pF
Ohms
X 10-4
hfe
-
-
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 10 Vde, IC
IBl = 30 mAde)
=
300 mAde,
Fall Time
(VCC = 10 Vde, IC = 300 mAde,
IBl = 30 mAde, IB2 = 30 mAde)
Turn-On Time
(lC
Turn-Off Time
(lC
Storage Time
= 300 mAde, IBl = 30
= 300 mAde, IBl = 30
(1) Pulse Test: Pulse Width", 300
p,S,
mAde)
mAde, IB2
tf
-
70
ns
ton
-
75
ns
toff
-
170
ns
ts
= 30 mAde)
Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-191
•
•
MPS3640
MAXIMUM RATINGS
Rating
Symbol
Valua
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
80
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29·04, STYLE 1
TO-92 ITO-226AA)
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
R6JC
83.3
°C/W
Thermal Resistance, Junction to Ambient
R6JA
200
°C/W
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(VCE
=
100 !lAde, VBE
=
10 mAde, IB
= 0)
= 0)
= 0)
= 0)
100 !lAde, Ie
100 !lAde, IC
= 6.0 Vde, VBE = 0)
= 6.0 Vde, VBE = 0, TA = 65°C)
= 6.0 Vde, VBE = 0)
Collector Cutoff Current
Base Cu rrent
=
(lC
(IE
=
(lC
(VCE
(VCE
-
V(BR)CES
12
VCEO(sus)
12
V(BR)CBO
12
-
V(BRlEBO
4.0
-
ICES
-
0.01
1.0
!lAde
IB
-
10
nAde
30
20
120
-
Vde
Vde
Vde
Vde
ON CHARACTERISTICS(1)
DC Current Gain
(lC
(lC
=
=
= 0.3 Vde)
= 1.0 Vde)
(lC = 10 mAde, IB
IIc = 50 mAde, IB
IIc = 10 mAde, IB
IIc = 10 mAde, IB
IIc = 10 mAde, IB
IIc = 50 mAde, IB
10 mAde, VCE
50 mAde, VCE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
= 1.0 mAde)
= 5.0 mAde)
= 1.0 mAde, TA =
= 0.5 mAde)
= 1.0 mAde)
= 5.0 mAde)
VCE(sat)
65°C)
VBE(sat)
0.75
0.8
-
0.2
0.6
0.25
Vde
0.95
1.0
1.5
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
=
= =
= 5.0 Vde, f =
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
IIC
=
10 mAde, VCE
100 MHzl
5.0 Vde, IE
0.5 Vde, IC
500
-
Cobo
-
3.5
pF
Cibo
-
3.5
pF
-
10
ns
tr
30
ns
ts
-
20
ns
12
ns
tr
MHz
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 6.0 Vde, IC
IB1 = 5.0 mAde)
Storage Time
(VCC
Delay Time
=
6.0 Vde, IC
=
50 mAde, VBE(off)
= 50
mAde, IB1
=
=
IB2
1.9 Vde,
=
5.0 mAde)
Fall Time
td
tf
Turn-On Time
(VCC = 6.0 Vde, IC
(VCC = 1.5 Vde, IC
=
=
50 mAde, VBE(off) = 1.9 Vde, IB1
10 mAde, IB1 = 0.5 mAde)
Turn-Off Time
(VCC = 6.0 Vde, IC
(VCC = 1.5 Vde, IC
=
=
50 mAde, VBE(off) = 1.9 V, IB1 = IB2
10 mAde, IB1 = IB2 = 0.5 mAde)
=
ton
5.0 mAde)
toff
=
5.0 mAde)
(1) Pulse Test: Pulse Width"" 300 I's, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-192
-
ns
-
25
60
-
35
75
ns
MPS3640
FIGURE 1
FIGURE 2
Vaa =+1.9 V
VCC = -6.0 V
Vaa = -6.0 V
110
-:.lI
1.0 k
O.II'F
Vout
TO SAMPLING SCOPE
Vin:f
PULSE SOURCE
Input Z ~100 k
Rise Tim.~ 1.0 ns
Rise Tim.:: 1.0 ns
Pul .. Width ~1 00 ns
lin = 50 Ohms
NOTES: Collector Current =50 rnA, Turn-On and Turn-Off Time
Fall Time~ 1.0 ns
Base Currents '" 5.0 rnA.
130
:n
S.O k
Vin~I'F
~ 100
Rise Time~ 1.0 ns
H250 C
B 50 -
i--- 5SOC
70
FIGURE 4 - "ON" VOLTAGES
1.4
<.>
IIIIII
I I tIll
III
t-- TJ = 12Sob
1. 2
.... -
c
Rise Time:s.t.O ns
Base Currents =0.5 rnA.
T\ = Il25d c
-
~
TO SAMPLING SCOPE
Input l ~1 00 k
Pulse Width ~200 ns
lin::: 50 Ohms
NOTES: Collector Current'" 10 rnA, Turn-On and Turn-Off Time
Fall Time~ 1.0 ns
VCE= 1.0V
0:
Vout
5.0 k
51
PULSE SOURCE
FIGURE 3 - DC CURRENT GAIN
200
to
VCC=I.SV
~ 1. 0
~~~(r8 @ ICII? =;.
~
w
I
0.8
vmON@VC~=
to
<
~ O. 6
......
g
->
~ 30
IIIII
IHI
0.4
O. 2
O.S
0.2
1.0
2.0
S.O
SO
20
10
...f-1'
o
100
I I I
0.1
0.5
0.2
IC. COLLECTOR CURRENT (mAl
FIGURE 5 - COLLECTOR SATURATION REGION
1. 0
O. 8
I
III
I
III
S.O mA
Ic=1.0mA
0:
~Ui
II
II
+0. 5
~....
80 mA
l~
.... w
\
",to
~ ;:!: 0.4
-'-'
00
<.»
O. 2
"-
0
0.01
II I
0
~
,
O.OS
2.0
~
t;
TJ = 25 0 C
f= 100 MHz
-S5 0"J:2;;;;C
~
-1.0
~
5.0
250C to 1250C
-1.5
f-- RIM! fOR VBE
-2.0
0.1
10
0.2
:::>
....
c
o
x
t; 800
~
Z
:iI
I'"
600 V
......
./
I I
Il
S
50
20
100
FIGURE 8 - CAPACITANCE
TJ=25 0 C
3.0
-r-....
~
~
-
1.0 V
--
w
i!
2.0
-...:
~
U
I- Cabo
Cibo
~
~ 400
U 1.0
'"
:5
O. 7
0:
0:
-
-5t"Ti
VCE-l0V
~
Z
a,.:
I--0.5
1.0
2.0
5.0
10
IC. COLLECTOR CURRENT (mAl
5.0
I
::: 1000
to 12510 C
-0. S
~
0.1
0.2
O.S
1.0
lB. BASE CURRENT (mAl
100
w
~
0.02
SO
S
~
....
-
20
R6VC fOR VCC(satl
:5
FIGURE 7 - CURRENT-GAIN-BANDWIDTH PRODUCT
~2000
Wi
'APPLIES FOR Iclla" hFE/4
u
0:>
0-
~
u
I
~ ~o. 6
>
S.O
10
1.0
2.0
IC. COLLECTOR CURRENT (mAl
FIGURE 6 - TEMPERATURE COEFFICIENTS
TJ=25 0 C
20 mA
'joy
I I I
I LI
-lU\~tI @I~/IB ~ 1~
20
10
0.1
I
I I
I I
200
1.0
2.0
3.0
S.O 7.0 10
20
30
IC. COLLECTOR CURRENT (mAl
SO
O.S
0.2
70 100
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-193
10
20
•
MPS3646
MAXIMUM RATINGS
•
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Emitter Voltage
VCES
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Collector Current - Continuous
-10 p.s Pulse
IC
300
500
mAde
Total Device Dissipation @ TA = 25°C
Derate above 250C
Po
625
5.0
mW
mWf'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12.0
Watts
mWrc
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
.:()"'~'
"
23
1 Emitter
SWITCHING TRANSISTOR
THERMAL CHARACTERISllCS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RruC
83.3
0c/w
Thermal Resistance, Junction to Ambient
RruA
200
0c/w
NPN SILICON
Refer to 2N4264 for graphs.
ELECTRICAL CHARACTERISllCS
(TA
= 25°C unless otherwise
noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCE
(VCE
(lC
(IE
=
(lC
=
=
100 pAde, VBE
=
10 mAde, IB
= 0)
= 0)
= 0)
= 0)
100 pAde, IE
100 pAde, IC
= 20 Vde, VBE = 0)
= 20 Vde, VBE = 0, TA = 65OC)
V(BR)CES
40
VCEO(sus)
15
-
VIBRICBO
40
-
VIBRIEBO
5.0
ICES
-
0.5
3.0
Vde
Vde
Vde
Vde
pAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC
(lC
(lC
= 30 mAde, VCE = 0.4 Vde)
Collector-Emitter Saturation Voltage
(lC
(lC
(lC
(lC
= 100 mAde, VCE = 0.5 Vde)
= 300 mA, VCE = 1.0 Vde)
= 30 mAde, IB = 3.0 mAde)
= 100 mAde, IB = 10 mAde)
= 300 mAde, IB = 30 mAde)
= 30 mA, IB = 3.0 mA, TA = 65°C)
Base-Emitter Saturation Voltage
(lC
(lC
(lC
= 30 mAde, IB = 3.0 mAde)
= 10091Ade, IB = 10 mAde)
= 300 mAde, IB = 30 mAl
hFE
VCE(sat)
VBE(sat)
30
25
15
0.73
-
120
-
-
0.2
0.28
0.5
0.3
Vde
0.95
1.2
1.7
Vde
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lC = 30 mAde, VCE = 10 Vde, f = 100 MHz)
/
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f = 1.0 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= O;f
Cobo
./
Cibo
~ 1.0 MHz)
350
-
-
MHz
5.0
pF
-
pF
18
ns
SWITCHING CHARACTERISTICS
Turn-On TIme
Delay Time
(VCC = 10 Vde, VBE(off) = 3.0 Vde, IC
IB1 = 30 mAde) (Figure 1)
= 300 mAde,
Rise Time
Turn-Off Time
Fall Time
Storage Time
(VCC = 10 Vde, IC
toff
-
28
ns
tf
-
15
ns
ts
-
18
ns
ton
td
tr
(VCC = 10 Vde, IC
(Figure 1)
= 300 mAde, IB1 =
= 10 mAde, IB1 = IB2 = 10 mAde)
IB2
= 30 mAde)
(Figure 2)
(1) Pulse Test: Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-194
10
ns
15
ns
MPS3646
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
-3.0 V
+10 V
1.0 k
+7. 6V
n
-.l
o
L
<
Vin1
0.1
tptf
1.0 n5
Pulse Width ~ 240 ns
Zin"" 50
33
120
To Sampling Scope
t r <1.0ns
2in
= 100 kn
50
n
FIGURE 2 - CHARGE STORAGE TIME TEST CIRCUIT
+10 V
+11 V
10% Pulse
+6.0 V
500
t.
O~J
Vin
-10 V
t r <1.0ns
Pulse Width"" 300 ns
To Sampling Scope
tr~1.0ns
Zin"" 100 k!1
56
-=
Duty Cycle = 2.0%
Zin"" 50
n
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-195
•
•
MPS3702
MPS3703
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
MAXIMUM RATINGS
Rating
Symbol MPS3702 MPS3703
Unit
VCEO
25
30
Vde
Collector-Base Voltage
VCBO
40
50
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Po
625
5.0
mW
mWrC
-55 to +150
"C
Collector-Emitter Voltage
Collector Current -
Continuous
Total Device Dissipation @TA = 25"C
Derate above 25"C
Operating and Storage Junction
Temperature Range
TJ, Tstg
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Thermal Resistance, Junction to Ambient
Reiar to 2N4402 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Charactarlstlc
Symbol
Min
Max
25
30
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CEO
MPS3702
MPS3703
Vde
V(BR)CBO
MPS3702
MPS3703
Vde
40
50
-
V(BR)EBO
5.0
-
Vde
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
'CBO
-
100
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
100
nAde
60
30
300
150
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 50 mAde, VCE
=
hFE
MPS3702
MPS3703
5.0 Vde)
-
Collector-Emitter Saturation Voltage(l)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
-
0.25
Vde
Base-Emitter On Voltage(l)
(IC = 50 mAde, VCE = 5.0 Vde)
VBE(on)
0.6
1.0
Vde
fr
100
-
MHz
-
12
SMALL-slGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 5.0 Vde, f
Output Capacitance
(VCB = 10 Vde, f
=
=
20 MHz)
Cobo
1.0 MHz)
(1) Pulse Test: Pulse Width = 300 /LS, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-196
pF
MPS3704
MPS370S
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
5
Vde
IC
600
mAde
PD
625
5.0
mW
mWrC
TJ, Tstg
-55 to +150
°c
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
II
CASE 29-04. STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
~~".~'
"
23
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPNSILICON
Thermal Resistance, Junction to Ambient
Reier to 2N4400 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IE = 0)
V(BR)CEO
30
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
50
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
100
nAde
100
50
300
150
ON CHARACTERISTICS
DC Current Gain(l)
(lc = 50 mAde, VCE = 2.0 Vde)
-
hFE
MPS3704
MPS3705
Collector-Emitter Saturation Voltage(l)
(lc = 100 mAde, IB = 5.0 mAde)
VCE(sat)
MPS3704
MPS3705
Base-Emitter On Voltage(l)
(lC = 100 mAde, VCE = 2.0 Vde)
-
Vde
-
0.6
0.8
VBE(on)
0.5
1.0
Vde
If
100
-
MHz
-
12
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 2.0 V, f = 20 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width
=
300 /'
N°lA
~i
Bandw;dth '" 1 0
50
RS~-
I
20
"'~"
10
.......
IC" 1.0mA
~ 5.0
:<00 "A
300 "A
-'"'
r-....
100"A
r-..
30"11
10"A
~ La
3 05
"'i- ~
r-
30 "A
30
I 50
20
lO~A
_ ..
0.2
I
2.0
10
HZ1
r-
f-.
_
B
~ 2.0
w
~
RS" 0
z
c3 7.0
~ 5.0
Bandw:dth ~ "0
~ 1.0' ml
100
I
100
200
500
1.0k
f, FREQUENCY (Hzl
20k
5.0k
10k
10
20
50
100
200
500
1.0 k
I. FREQUENCY (Hzl
2.0 k
5.0 k
10 k
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, T A = 25°C)
FIGURE 6 - NARROW BAND. 1.0 kHz
FIGURE 5 - NARROW BAND. 100 Hz
500 k
200 k
500 k
Bandwidth - 1.0 Hz
enlOD k
~ 5Dk
~
S
UJ
~
~2.0k
g; 1.0 k
~
-
20 k
10k
>~ 5.0k
Bandwidth'" 1.0 Hz
G 200 k
100 k
50k
u
~ 20k
~ 10k
~ l=2.0dB
w
4.0 dB
6.0 dB ~
500
==
20
30
50 70 100
200 300
Ie, COLLECTOR CURRENT '"AI
500 700
2.0 dB
~ 2.0k
IOdB
~ 200
100
50
10
1.0dB
~ 5Dk
3.0 dB
~
1.0k
ii
500
10k
3.0 dB
5.0dB
200
100
10
8.0 dB
20
30
50 10 100
200 300
IC, COLLECTOR CURRENT ("AI
500 100
1.0 k
FIGURE 7 - WIDEBAND
500 k
10 Hz to 15.7 kHz
200 k
Noise Figure is Defined as:
Cii'10D k
~
SDk
~
20k
S
~
2
2 2) 1/2
NF ' 20 10910 en + 4KTRS +1 n RS
4KTRS
~ 10k
~ 5.0k
~
1.0 dB
en == Noise Voltage of the Transistor referred to the input. (Figure 3)
20dB
2.0k
~ 1.0k
'"
~
500
~ 200
In
20
30
50 70 100
200 300
'C, COLLECTOR CURRENT ("AI
Noise Current of the transistor referred to the input (Figure 4)
K ' Boltzman', Constant (1.38 x 10.23 j/oKI
50 dB
T
B.OdB
RS "" Source Resistance (Ohms)
100
50
10
=:
30dB
500 700
=Temperature of the Source Resistance (OK)
1.0 k
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-202
MPS3903, MPS3904
TYPICAL STATIC CHARACTERISTICS
•
FIGURE 8 - DC CURRENT GAIN
400
- -
+}= 125 0 C
r.:.:
z
"
to
200
....
~
,....... -~
Z
W
a:
a:
B
g 100
F=-
-
.-
~ 80
.....
-~I:=
~
;::.. ~ r.:::..
;::... po
-:..--
.~
60
-of-551c
-
0.02 0.03
0.2
0.3
0.5 0.7 1.0
2.0
IC. COLLECTOR CURRENT (rnA)
>
~ 0.6
10mA
50mA
5.0 7.0
10
~
liB
Pulse Width =300 /.IS
oS
....
ill
,
:; 60
B
a:
'"
~ 0.4
9
20
~
-..-r--
/:
-I-- r--
(/
CI
t; 40
V-
~
I.....
3oo"A
j.....--
200JA
CI
0.05 0.1 0.2
0.5 1.0
lB. BASE CURRENT (rnA)
2.0
5.0
10
o
o
20
FIGURE 11 - "ON" VOLTAGES
m
~
~
w
1.6
TJ=25 0 C
0
40
d:::f
Jl
....
~BvaforVaE
10
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mA)
JJ
25 0C 10 '12~C
8
41""""
0.5
$
250 C 10 1250 C
B
I I II 1111
I II II
0.2
~
-550 C 10 250 C
f----- ~BE(rn)llI>m,=, !.o V
f----- VCE("t) Olclla •
r-
I
~
III
I--- ~aE( ..t) II> Iclla = 10
0.1
=
ill JJ
'BVC for VCE".,)
I-""
o
-
ill
'Applies for Ic/la < hFE/2
I111
IIII
o. 2
100
~
VCE. COLLECTOR·EMITTERVOLTAGE (VOLTS)
1. 2
8
70
FIGURE 12 - TEMPERATURE COEFFICIENTS
1.4
~
50
10o~
1
"':;20
"
"
30
'500~
CI
j-o.2
..:;
> 0
0.002 0.005 0.01 0.02
i\
Outy Cycl. < 2.0%
<80
I II
1\ 100mA
~
3.0
I.....:"",TA 250 C
TJ' 25 0 C
ii o.8
Ic=I.0mA
I~~
---
FIGURE 10 - COLLECTOR CHARACTERISTICS
100
~~J~J~
CI
~
~ i'l_
II II
0.05 0.07 0.1
0
CI
-
,
",
MPS3904
- - VCE=1.oV
- - - VCE=loV
FIGURE 9 ..... COLLECTOR SATURATION REGION
~1.
- ---
-:;.;: p0,01
--
~~
..........
.-'-
40
0.004 0.006
-.....
-
251c
---
1-
60
T
II
0.5
100
III
I I
1.0
2.0
1.0
10
20
Ie. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-203
II M
-550 C 10 250 C
60
100
MPS3903, MPS3904
TYPICAL DYNAMIC CHARACTERISTICS
•
FIGURE 13 - TURN-()N TIME
FIGURE 14 - TURN·OFF TIME
300
I~!l~ :~:V
200
100
70
1000
700
500
TJ • 2S·C
"
I~)i~ : ~OO V
Ifl : ~~~C
I"'-
Is
300
:!200
!SO
~100
I,
~3D
~20
.......
Id@VSE(.ff) - 0.5 Vd,
10
,
70
50
.>
r-- ......
II
i-"
30
7.0
5.0
20
3.0
1.0
2.0
3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (rnA)
50
70
10
100
2.0
1.0
3.0
FIGURE 15 - CURRENT-GAIN - BANDWIDTH PRODUCT
"'SOD
'"
II II
t;
TJ - 25·C
l-l00MH,
7.0
=>
c 300
o
-
vJP 2dv
if
......
~
'"
1;200
P"S.O V
~~
~
~z
~5.0
.........
..........
w
<.>
z
~t'--
;::
~3.0
t'--
-
-
r-..
r-
Cib
"I"-
,
r--....,C.b
u~ 2.0
"'-..
70
1l
50
0.5
0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (rnA)
20
30
1.0
0.05
50
0.1
0.2
f',
10
200
IIIIIII
':-..
VCE - 10 Vd,
1-1.0kH,
TA - 25·C
'" 100
~ 70
MPS3904
a 7.0
~
hfe
5.0
200@lc-1.0mA
~
w
~ 3.0
«
~
!!
~
MPS3903
'"
2.0 t- hf.~ lOD@lc=1.0mA
1.0
!: 0.7
i'
u
u
"'i'u
/
10
1lI
IC, COLLECTOR CURRENT (rnA)
50
10
~ 7.0
o
5.0
J
!il
~
~
MPS3903
hfe ~ 100@le
1.0mA
I
0.5
1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
2-204
",'/
.-
3.0
i-"""
2.0
0.1
0.2
100
II
hfe"l::200@lc-1.0mA
'"~
~
20
MPS3904
50
~ 20
.....
0.2
~ ~d~
VCE 10
1-1.0 kHz
TA=25·C
z
~ 30
10.5
OJ
0.2
0.1
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
'r-.
FIGURE 18 - OUTPUT ADMITTANCE
FIGURE 17 - INPUT IMPEDANCE
1lI
~
100
TJ =25·~,t
1= 1.0MH,
ill
.to
70
~
~100
~
50
FIGURE 16 - CAPACITANCE
10
~
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (rnA)
50
100
MPS3903, MPS3904
FIGURE 19 - THERMAL RESPONSE
1.0
~
0.7
0.5
~
0.3
w
tii
~
_I
iO!!lI
"'"' 0.1
~ ~O.07 ~
f--
~
~.
~
0.0
0.0
I-
~f-
0.05
DUTY CYCLE. 0 = !J/12
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT!J (SEE AN·569)
0.02
0.1!.l-
!--
V
!--
IJ..
0.0 1
0.01
0.02
0.05
Z9JAII) = rid· R9JA
TJlpk) -TA = P(pk) Z9JAId
VS;ngll,po:"
0.1
0.2
05
1.0
5.0
2.0
10
ICEX
+20
+40
+60
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
A train of periodical power pulses can be represented
by the model as shown in Figure 19A. Using the model and
the device thermal response the normalized effective
transient thermal resistance of Figure 19 was calculated
for various duty cycles.
To find ZoJA(t), multiply the value obtained from
Figure 19 by the steady state value ROJA.
./
ICED
-20
500
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
~VCC 30 Vde
I
50
100
200
t, TIME (ms)
20
FIGURE 1SA
10- 2
-40
I I II
t;-1
0.1
"'~
ffi
~
in
I I I I FIGURE 19A
pf~
0.2
~8 0.2
~ ~O.O 5
•
D - 0.5
@
+80
ICBO
AND
VBEloffl = 3.0 Vde -
+100
+120
+140
+160
TJ. JUNCTION TEMPERATURE lOCI
Example:
The MPS3903 is dissipating 2.0 watts peak under the
following conditions:
11 = 1.0 ms. t2 = 5_0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2,
the reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
aT = r(t) x P(pk) x ROJA = 0.22 x 2.0 x 200
= BBoC_
For more information, see AN-569.
FIGURE 20
40 0
:;c
c
._.
200
~
...
;: 10 0
:il
:i:
"~
o
60
--
....
TA
10,us
TC =
2~C--
.......
de
......
t;
j
20
8
!J
10
TJ
-
6. 0
4. 0
2.0
lOs
de
25°C
40
-.. ~
1. ;;;;--. ,.....100}.ls
.......
1'-1'-
...... r -
= 150 0 C
::~
'-CURRENT LIMIT
-THERMAL LIMIT
SECOND BREAKDOWN LIMIT
.:=
---
~-
4.0
60
80 10
20
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI
t-.
---
40
The safe operating area curves indicate IC-VCE limits
of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150°C;
TC or T A is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided T J(pk) ..;
150°C. TJ(pk) may be calculated from the data in Figure
19. At high case or ambient temperatures. thermal limitations will reduce the power than can be handled to
values less than the limitations imposed by second breakdown.
MOTOROLA SMAll-SIGNAL SEMICONDUCTORS
2-205
MPS3906
MAXIMUM RATINGS
•
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
I
IB
200
Vdc
PD
625
5.0
mW
mWrC
PD
450
mW
PD
1.5
12
Watts
mWrC
TJ, Tstg
-55to+150
"C
Symbol
Max
Unit
GENERAL PURPOSE
TRANSISTOR
Thermal Resistance, Junction to Case
R9JC
83.3
"CfW
PNPSILICON
Thermal Resistance, Junction to Ambient
R9JA
200
"CfW
Base Current
Total Device Oissipation @ TA
Derate above 25"C
= 25"C
Total Power Dissipation @TA
= 60"C
= 25"C
Total Device Dissipation @ TC
Derate above 25"C
Operating and Storage Junction
Temperature Range
,
1
2
THERMAL CHARACTERISTICS
Characteristic
3 Collector
2t?\
Bas~
1 Emitter
3
Refer to 2N5086 for graphs.
I
ELECTRICAL CHARACTERISTICS
(TA
= 25"C unless otherwise
noted.)
Max
Symbol
MIn
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 /lAde, IE = 0)
V(BR)CBO
40
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 /lAde, IC = 0)
V(BR)EBO
5.0
-
Vde
50
nAde
50
nAde
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 Vde, VBE(off)
= 3.0 Vde)
Base Cutoff Cu rrent
(VCE = 30 Vde, VBE(off)
= 3.0 Vde)
ICEX
IBL
-
ON CHARACTERISTICS!l)
DC Current Gain
(lC = 0.1 mAde, VCE = 1.0Vde)
(lc = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
60
80
100
60
30
-
-
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 V, f = 100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-206
-
300
-
Vde
0.25
0.4
Vde
0.65
SMALL-5IGNAL CHARACTERIS11CS
-
0.85
0.95
MPS3906
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25"C unless otherwise noted)
Symbol
Min
Max
Unit
Output Capacitance
(VC8 = 5.0 Vdc, IE = 0, I = 100 kHz)
Cobo
-
4.5
pF
Input Capacitance
(V8E = 0.5 Vdc, IC = 0, I = 100 kHz)
Cibo
-
10
pF
Characteristic
Input Impedance
(lC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
2.0
12
kohms
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
h re
1.0
10
X 10-4
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vdc, I = 1.0 kHz)
hIe
100
400
-
Output Admittance
(lC = 1.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
hoe
3.0
60
,.mhos
Noise Figure
(lC = 100 ,.Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 10 Hz to 15.7 kHz)
NF
-
4.0
d8
(VCC = 3.0 Vdc, V8E(off) = 0.5 Vdc
(lC = 10 mAdc, 181 = 1.0 mAdc)
td
-
35
ns
tr
-
50
ns
(VCC = 3.0 Vdc,IC = 10 mAdc,
181 = 182 = 1.0 mAdc)
ts
600
ns
90
ns
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
tl
(1) Pulse Test: Pulse Width = 300 ,.s, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-207
-
•
•
MPS4123
MPS4124
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol MPS4123 MPS4124
Unit
Collector-Emitter Voltage
VCE
-30
25
Vdc
Collector-Base Voltage
VCB
40
30
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
200
mAde
Total Power Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
mWrC
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
mWrC
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
mW
W
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPNSIUCON
Max
Thermal Resistance, Junction to Ambient
200
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 rnA, IB = 0)
MPS4123
MPS4124
V(BR)CEO
30
25
Collector-Base Breakdown Voltage
(lC = 10 pA, IE = 0)
MPS4123
MPS4124
V(BR)CBO
40
30
V(BR)EBO
5.0
= 0, IE =
= 20 V, IE = 0)
= 3.0 V, IC = 0)
Emitter-Base Breakdown Voltage (lC
10 pAl
Collector Cutoff Current (VCB
ICBO
Emitter Cutoff Current (VEB
lEBO
-
-
Vdc
-
Vdc
50
nAdc
50
nAdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 rnA, VCE
(lc
= 50
rnA, VCE
-
hFE
=
1.0 V)
=
1.0 V)
MPS4123
MPS4124
MPS4123
MPS4124
50
120
25
60
150
360
-
-
Collector-Emitter Saturation Voltage
(lC = 50 rnA. IB = 5.0 rnA)
VCE(sat)
-
0.3
Vdc
Base-Emitter Saturation Voltage
(lC = 50 rnA, IB = 5.0 rnA)
VBE(sat)
-
0.95
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 rnA, VCE = 20 V, f = 100 MHz)
Output Capacitance
(VCB = 5.0 V, IE = 0, f
Input Capacitance
(VBE = 0.5 V, IC
=
100 kHz)
= 0, f =
100 kHz)
Small-Signal Current Gain
(lC = 2.0 rnA. VCE = 1.0 V, f
=
1.0 kHz)
Noise Figure
(lC = 100 pA, VCE = 5.0 V, RS = 1.0 kG,
Noise Bandwidth = 10 Hz to 15.7 kHz)
MPS4123
MPS4124
-
100
170
Cob
-
4.0
pF
-
14
13.5
pF
50
120
200
480
-
6.0
5.0
MPS4123
MPS4124
Cib
MPS4123
MPS4124
hfe
NF
MPS4123
MPS4124
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
dB
-
2-208
MHz
IT
MPS4125
MPS4126
Rating
Symbol MPS4125 MPS4126
Unit
Collector-Emitter Voltage
VCE
30
25
Vdc
Collector-Base Voltage
VCB
30
25
Vdc
Emitter-Base Voltage
VEB
4.0
Vdc
IC
200
mAde
Po
625
5.0
mWrC
1.5
12
mWrC
-55to +150
°c
Collector Current -
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Continuous
Total Power Dissipation @ TA
Derate above 25°C
~
Total Power Dissipation @ TC
Derate above 25°C
~
25°C
25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
mW
W
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
PNPSIUCON
Max
Thermal Resistance, Junction to Ambient
200
~ 25°C unless otherwise noted.)
ELECTRICAL CHARACTERISTICS (TC
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ~ 1.0 mA. IB ~ 0)
MPS4125
MPS4126
V(BR)CEO
30
25
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 10 p,A, IE ~ 0)
MPS4125
MPS4126
V(BR)CBO
30
25
-
Vdc
V(BR)EBO
4.0
-
Vdc
-
50
nAdc
50
nAdc
50
120
25
60
150
360
Emitter-Base Breakdown Voltage (lC
Collector Cutoff Current (VCB
Emitter Cutoff Current (VEB
~
~
~
0, IE
20 V, IE
3.0 V, IC
~
~
~
10 p,A)
0)
ICBO
0)
lEBO
-
ON CHARACTERISTICS
DC Current Gain
(lC ~ 2.0 mA. VCE
(lc
~
50 mA, VCE
-
hFE
~
~
1.0 V)
MPS4125
MPS4126
MPS4125
MPS4126
1.0 V)
-
Collector-Emitter Saturation Voltage
(lc ~ 50 mA, IB ~ 5.0 mAl
VCE(sat)
-
0.4
Vdc
Base-Emitter Saturation Voltage
(lC ~ 50 mA, IB ~ 5.0 mAl
VBE(sat)
-
0.95
Vdc
IT
ISO
170
-
MHz
Cob
-
4.5
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth PrOduct
(IC ~ 10 mA, VCE ~ 20 V, I ~ 100 MHz)
Output Capacitance
(VCB ~ 5.0 V, IE ~ 0, I
~
MPS4125
MPS4126
-
100 kHz)
Input Capacitance
(VBE ~ 0.5 V, IC ~ 0, I ~ 100 kHz)
MPS4125
MPS4126
Cib
-
12
11.5
pF
Small·Signal Current Gain
(lC ~ 2.0 mA, VCE ~ 1.0 V, I
MPS4125
MPS4126
hie
50
120
200
480
-
-
5.0
4.0
~
1.0 kHz)
Noise Figure
(lc ~ 100 P-A, VCE ~ 5.0 V, Rs ~ 1.0 kil,
Noise Bandwidth ~ 10 Hz to 15.7 kHz)
NF
MPS4125
MPS4126
dB
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-209
•
MPS4249
MPS4250
MPS4250A
MAXIMUM RATINGS
Rating
Symbol
MPS4249
MPS4250 MPS4250A
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Emitter Voltage
VCES
40
60
Vdc
Collector-Base Voltage
VCBO
40
60
Vdc
Emitter-Base Voltage
VEBO
5.0
5.0
Vdc
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
PD
625
5.0
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
PD
1.5
12
1.5
12
mW
mWrC
Total Device Dissipation @ TC
Derate above 100°C
~
100°C
PD
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
.:.~
, Emitter
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55to +125
°c
Junction Temperature
TJ
125
°C
Lead Temperature (10 seconds)
TL
260
°c
TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ~ 10 1lA)
(lC ~ 5.0 mAl
(lC ~ 5.0 mAl
MPS4249
MPS4250
MPS4250A
Collector-Emitter Sustaining Voltage(l)
(lC ~ 5.0)
(lC ~ 5.0)
MPS4250
MPS4249, MPS4250A
Collector-Base Breakdown Voltage
(lc ~ 10 1lA)
(lC ~ lOILA)
MPS4250
MPS4249, MPS4250A
Vdc
V(BR)CES
60
40
60
-
40
60
-
40
60
-
Vdc
V(BR)CEO(sus)
Vdc
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE ~ lOILA)
V(BR)EBO
Collector Cutoff Current
(VCB ~ 40 V)
(VCB ~ 50 V)
(VCB ~ 40 V, TA ~ 65°C)
ICBO
MPS4249, MPS4250A
MPS4250
MPS4249, MPS4250
Emitter Cutoff Current
(VBE ~ 3.0 V)
5.0
nA
-
lEBO
Vdc
-
10
10
3.0
20
nA
ON CHARACTERISTICS
DC Current Gain
(lC ~ 100 1lA, VCE ~ 5.0 V)
(lc ~ 100 ILA, VCE ~ 5.0 V)
(lc ~ 1.0 mA, VCE ~ 5.0 V)
(lc ~ 1.0 mA, VCE ~ 5.0 V)
(lc ~ 10 mA, VCE ~ 5.0 V)
(lc ~ 10 mA, VCE ~ 5.0 V)
-
hFE
MPS4249
MPS4250,A
MPS4249
MPS4250
MPS4249
MPS4250
100
250
100
250
100
250
300
700
-
-
Collector-Emitter Saturation Voltage(l)
(lC ~ 10 mA. IB ~ 0.5 mAl
VCE(sat)
-
0.25
Vdc
Base-Emitter Saturation Voltage(l)
(lC ~ 10 mA, IB ~ 0.5 mAl
VBE(sat)
-
0.9
Vdc
SMALL-5IGNAL CHARACTERISTICS
Output Capacitance
(VCB ~ 5.0 V, f ~ 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-210
MPS4249, MPS4250, MPS4250A
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25°C unless otherwise noted.)
Characteristic
Input Capacitance
(VBE = 0.5 V, I = 1.0 MHz)
Small-Signal Current
(Ie = 1.0 mA. VCE
(Ie = 1.0 mA. VCE
(Ie = 0.5 rnA. VeE
Gain
= 5.0 V, 1= 1.0 kHz)
= 5.0 V, I = 1.0 kHz)
= 5.0 V, I = 20 MHz)
Noise Figure
(Ie = 20 pA, VeE = 5.0 V, Rs = 10 kil,
1= 1.0 kHz, PBW = 150 Hz)
(Ie = 20 p.A, VeE = 5.0 V, Rs = 10 kil,
I = 1.0 kHz, PBW = 150 Hz)
(Ie = 250 p.A, VeE = 5.0 V, Rs = 1.0 kil,
1= 1.0 kHz, PBW = 150 Hz)
(Ie = 250 p.A, VeE = 5.0 V, Rs = 1.0 kil,
t = 1.0 kHz, PBW = 150 Hz)
Symbol
Min
Max
Unit
Cibo
-
16
pF
100
250
2.0
500
800
-
hie
MPS4249
MPS4250.A
MPS4249,50
-
NF
dB
MPS4250.A
-
2.0
MPS4249
-
3.0
MPS4250.A
-
2.0
MPS4249
-
3.0
(1) Pulse Test: Pulse Width = 300 p.s, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-211
•
•
MPS4258
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
80
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
PD
625
12
mW
mWI"C
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
1.5
12
Watts
mWI"C
TJ, Tstg
-55to +150
°c
Symbol
Max
Unit
R9JC
83.3
°CIW
R9JA
200
°CIW
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
1/~~"2
1 Emitter
3
THERMAL CHARACTERISTICS
SWITCHING TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PNPSILICON
Refer to MPS3640 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lc = 100 pAde, VBE = 0)
V(BR)CES
12
-
Vde
Collector-Emitter Sustaining Voltage(1)
(lC = 3.0 mAde, IB = 0)
VCEO(sus)
12
-
Vde
Collector-Base Breakdown Voltage
(lc = 100 !LAde, IE = 0)
V(BR)CBO
12
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
4.5
-
Vdc
-
0.01
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 6.0 Vdc, VBE = 0)
(VCE = 6.0 Vdc, VBE = 0, TA
ICES
=
pAdc
-
+ 65°C)
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 1.0 mAde, VCE = 0.5 Vdc)
(lc = 10 mAde, VCE = 3.0 Vdc)
(lc = 50 mAde, VCE = 1.0 Vdc)
hFE
-
-
15
30
30
120
-
0.15
0.5
0.75
-
0.95
1.5
fT
700
-
Cibo
-
3.5
pF
Ceb
-
3.0
pF
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
Vdc
Vde
SMALL-SIGNAL CHARACTERISTICS
Current·Gain - Bandwidth Product(2)
(Ie = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
MHz
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-212
MPS4258
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25°e unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Storage Time
(Ie = 10 mAde, lSI
(Vee ~ 1.5 Vde,
VSE(off) ~ 0,
Ie ~ 10 mAde, lSI
~
1.0 mAde)
(Vee ~ 1.5 Vde,
Ie ~ 10 mAde,
IBI ~ IS2 ~ 1.0 mAde)
ton
-
15
ns
td
-
10
ns
tr
-
15
ns
toff
-
20
ns
ts
-
20
ns
tf
-
10
ns
20
ns
ts
= 10 mAde, IB2 = 10 mAde)
(1) Pulse Test: Pulse Wid1h "" 300 p.s, Duty eyele "" 2.0%.
(2) tr is defined as the frequency at which Ihfel extrapolates to unity.
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
VBB
Vee
Rl
R2
von~
son
R3
Vout
Zin> lDOkn
tr< 1.0 ns
Von
vorts
Ion
-5.B
Zin=50n
toft
tr<1.0ns
Is
+9.8
+9.0
VBB
Volts
Vee
Volts
Rl
Ohms
R2
Ohms
R3
Ohms
Ie
rnA
IBI
rnA
IB2
rnA
GND
-8.0
-10
-1.5
-1.5
-3.0
130
130
170
2.2 k
2.2 k
510
5k
5k
390
10
1.0
1.0
10
1.0
10
tw= 240 ns
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-213
10
10
-
•
MPS5172
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWI"C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWI"C
TJ, Tstg
-55to +150
°c
Symbol
Max
Unit.
Thermal Resistance, Junction to Case
R8JC
83.3
°CIW
Thermal Resistance, Junction to Ambient
R8JA
200
°CIW
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
Unit
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
1 Emitter
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
NPN SILICON
Refer to MPS3903 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO.
25
-
-
Vdc
-
-
100
10
nAdc
/lAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 25 Vdc, IE = 0, TA
ICBO
=
100°C)
Collector Cutoff Current
(VCE = 25 Vdc, VBE = 0)
ICES
-
-
100
nAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
-
100
nAdc
hFE
100
-
500
-
Collector-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 1.0 mAde)
VCE(sat)
-
-
0.25
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
-
Vde
Base-Emitter On Voltage
(lc = 10 mAdc, VCE = 10 Vde)
VBE(on)
0.5
-
1.2
Vde
-
120
-
MHz
Ceb
1.6
-
10
hfe
100
-
750
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE
=
10 Vde)
C.75
SMALL SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 2.0 mAde, VCE = 5.0 Vde)
Collector-Base Capacitance
(VCB = O,IE = 0, f = 1.0 MHz)
Small Signal Current Gain
(lC = 10 mAde, VCE = 10 Vde, f
=
1.0 kHz)
(1) Pulse Test: Pulse W,dth", 300 p.S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-214
pF
-
MPS5179
II
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
12
Vde
Collector-Base Voltage
VCBO
20
Vde
Emitter-Base Voltage
VEBO
2.5
Vde
IC
50
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25"C
~
25"C
PD
200
1.14
mW
mWrC
Total Device Dissipation @ TC
Derate above 25"C
~
2S"C
PD
300
1.71
mW
mWrC
Tstg
-55to+150
"C
Storage Temperature Range
,I·:~'''"·'
23
1 EmItter
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA ~ 25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Sustaining Voltage
(lC ~ 3.0 mAde, IB ~ 0)
VCEO(sus)
12
Collector-Base Breakdown Voltage
(lC ~ 0.001 mAde, IE ~ 0)
V(BR)CBO
20
-
Emitter-Base Breakdown Voltage
(IE ~ 0.01 mAde, IC ~ 0)
V(BR)EBO
2.5
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 15 Vde, IE ~ 0)
(VCB ~ 15 Vde, IE ~ 0, TA ~ 150"C)
ICBO
-
Vde
Vde
Vde
/lAde
-
0.02
1.0
25
250
ON CHARACTERISTICS
DC Current Gain
(lC ~ 3.0 mAde, VCE
hFE
~
-
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 1.0 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
VBE(sat)
-
1.0
Vde
tr
900
2000
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC ~ 5.0 mAde, VCE ~ 6.0 Vde, I ~ 100 MHz)
Collector-Base Capacitance
(VCB ~ 10 Vde, IE ~ 0, f
~
Small Signal Current Gain
(lC ~ 2.0 mAde, VCE ~ 6.0 Vde, I
~
1.0 kHz)
Collector Base Time Constant
(IE ~ 2.0 mAde, VCB ~ 6.0 Vde, I
~
31.9 MHz)
Noise Figure (See Figure 1)
(lC ~ 1.5 mAde, VCE ~ 6.0 Vde, RS
~
50 ohms, I
~
-
1.0
pF
hie
25
300
-
rb'Ce
3.0
14
ps
NF
-
4.5
dB
15
-
dB
200 MHz)
Common-Emitter Amplilier Power Gain (See Figure 1)
(VCE ~ 6.0 Vde, IC ~ 5.0 mAde, I ~ 200 MHz)
(1)
Ccb
0.1 to 1.0 MHz)
Gpe
tr is delined as the Irequency at which ihlei extrapolates to unity.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-215
MPS5179
FIGURE 1 - 200 MHz AMPLIFIER POWER GAIN
ANO NOISE FIGURE CIRCUIT
•
TYPE
lN3195
>
L1 1·3/4 Turns, #18 AWG, 0.5" L, 0.5" Diameter
L2 2 Turns, #16 AWG, 0.5" L, 0.5" Diameter
L3 2 Turns, #13 AWG, 0.25" L, 0.5" Diameter (Position 1/4" from L2)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-216
MPS6507
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
100
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
= 25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25'C
= 25°C
PD
1.5
12
Watt
mWrC
TJ, Tstg
-55 to + 150
·C
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
":~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
R8JC
83.3
'CIW
R8JA(1)
200
'CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
AMPLIFIER TRANSISTOR
NPN SILICON
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA
-
Vdc
30
-
-
Vdc
3.0
-
-
Vdc
-
-
-
50
1.0
nAdc
pAdc
t,.
700
800
-
MHz
Cobo
-
1.25
2.5
pF
hfe
20
-
-
-
ICBO
= 60'C)
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 2.0 mAde, VCE
=
10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vdc, f
= 44 MHz)
(2) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-217
MAXIMUM RATINGS
•
Rating
Symbol
Collector-Emitter Voltage
MPS6512, MPS6513
MPS6514, MPS6515
MPS6516 thru MPS6518
MPS6519
VCEO
Collector-Base Voltage
MPS6512 thru MPS6515
MPS6516 thru MPS6518
MPS6519
VCBO
Emitter-Base Voltage
VEBO
4.0
4.0
Vde
IC
100
100
mAde
Collector Current -
= 25"C
Total Device Dissipation @ TC
Derate above 25"C
= 25"C
-
-
Vde
25
-
40
-
Vde
40
25
625
5.0
mWrC
1.5
12
mWrC
-55 to +150
"C
Po
TJ, Tstg
NPN
MPS6512
thru MPS6515
PNP
MPS6516
thl1l MPS6519
Unit
40
-
Po
Operating and Storage Junction
Temperature Range
PNP
30
25
Continuous
Total Device Dissipation @ TA
Derate above 25"C
NPN
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
mW
Watts
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RruC
B3.3
"C/W
Thermal Resistance, Junction to Ambient
RruA
200
"C/W
ELECTRICAL CHARACTERISTICS (TA
AMPLIFIER TRANSISTOR
Refer to 2N4125 for graphs.
= 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 0.5 mAde, IB = 0)
(lC
V(BR)CEO
= 0.5 mAde, IB = 0)
Emitter-Base Breakdown Voltage
(IE
(IE
MPS6512, MPS6513
MPS6514, MPS6515
30
25
MPS6516 thru MPS6518
MPS6519
40
25
-
4.0
4.0
-
-
-
= 10 !lAde, IC = 0)
= 10 !lAde, IC = 0)
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0)
(VCB = 20 Vde, IE = 0)
V(BR)EBO
ICBO
MPS6516 thru MPS6518
MPS6519
Vde
Vde
-
!lAde
0.05
0.05
0.05
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mAde, VCE
= 10 Vde)(l)
(lC
=
(lC
= 2.0 mAde, VCE = 10 Vde)
(lC
100 mAde, VCE
hFE
= 10 Vde)
= 100 mAde, VCE = 10 Vde)(l)
Collector-Emitter Saturation Voltage
(lC
(lC
MPS6512
MPS6513
MPS6514
MPS6515
50
90
150
250
MPS6512
MPS6513
MPS6514
MPS6515
30
60
90
150
(VCB
(VCB
-
100
180
300
500
-
150
250
-
MPS6516
MPS6517
MPS6518
MPS6519
30
60
90
150
-
-
-
0.5
0.5
50
90
= 50 mAde, IB = 5.0 mAde)
= 50 mAde, IB = 5.0 mAde)
VCE(sat)
-
= 10 Vde, IE = 0, f = 100 kHz)
= 10 Vde, IE = 0, f = 100 kHz)
(1) Pulse Test: Pulse Width.,; 300 p,s, Duty Cycle.,; 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-218
-
-
-
-
-
MPS6516
MPS6517
MPS6518
MPS6519
SMALL-8IGNAL CHARACTERISTICS
Output Capacitance
-
100
180
300
500
-
Vde
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MPS6520, MPS6521
MPS6523
VCEO
Collector-Base Voltage
MPS6520, MPS6521
MPS6523
VCBO
Emitter-Base Voltage
VEBO
Collector Current -
Continuous
NPN
PNP
-
25
-
Unit
Vdc
25
-
40
-
Vdc
3 Collector
~~
1 Emitter
25
4.0
Vdc
IC
100
mAde
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
PD
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
NPN
MPS6520
MPS6521
3 Collector
PNP
MPS6523
~~
I
1 Emitter
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
Thermal Resistance, Junction to Case
Symbol
Max
R9JA
200
Unit
0c/w
R9JC
83.3
°CIW
\
3
AMPLIFIER TRANSISTOR
Refer to MPS3903 for NPN graphs.'
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Mex
Unit
Off CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 0.5 mAde, IB = 0)
(lC = 0.5 mAde, IB = 0)
V(BR)CEO
Emitter-Base Breakdown Voltage
(IE = 10 IlAde, IC = 0)
(IE = 10 IlAde, IC = 0)
V(BR)EBO
25
25
4.0
4.0
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 20 Vde, IE = 0)
ICBO
-
Vdc
Vdc
-
IlAde
-
-
0.05
0.05
ON CHARACTERISnCS
DC Current Gain
(lc = 100 IlAde, VCE
hFE
=
10 Vde)
MPS6520
MPS6521
100
150
(lC
= 2.0 mAde, VCE =
10 Vde)
MPS6520
MPS6521
200
300
(lC
=
=
10 Vde)
MPS6523
150
(lC
= 2.0 mAde, VCE =
10 Vde)
MPS6523
300
100 IlAde, VCE
-
-
400
600
400
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Vde
-
0.5
0.5
-
3.5
3.5
-
3.0
-
3.0
SMALL-5IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE
(VCB = 10 Vde, IE
= 0, f =
= 0, f =
Cobo
100 kHz)
100 kHz)
Noise Figure
(lC = 10 IlAde, VCE = 5.0 Vde, RS = 10 kohms,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
(lC = 10 IlAde, VCE = 5.0 Vde, RS = 10 kohms,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
NF
"Refer to 2N5086 for PNP graphs.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-219
pF
dB
•
MPS6530
MPS6531
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter·Base Voltage
VEBO
5.0
Vde
IC
600
mAde
PD
625
mW
TJ, Tsta
150
·C
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25·C
= 25·C
3 Collector
~~
1 Emitter
Junction Temperature
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to 2N4400 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
= 25·C unless otherwise
noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 p,Ade, IE = 0)
V(BR)CBO
60
-
Vde
.Emitter-Base Breakdown Voltage
(lB = 10 p,Ade, IC = 0)
(lB = 10 p,Ade, IC = 0)
V(BR)EBO
5.0
4.0
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 40 Vde, IE = 0, TA
ICBO
=
60·C)
Vde
p,Ade
-
0.05
2.0
ON CHARACTERISTICS
DC Current Gain
(lc = 10 mAde, VCE
=
-
hFE
1.0 Vde)
MPS6530
MPS6531
30
60
-
(lC
=
=
1.0 Vde)
MPS6530
MPS6531
40
90
120
270
(lC
= 500 mAde, VCE =
10 Vde)
MPS6530
MPS6531
25
50
-
-
0.5
0.3
-
1.0
100 mAde, VCE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
MPS6530
MPS6531
Base-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE
(VCB = 10 Vde, IE
= 0, f =
= 0, f =
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-220
Vde
Vde
MPS6534
II
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
600
mAde
Po
625
mW
TJ, Tstg
150
°c
Rating
Collector Current -
Continuous
~
Total Device Dissipation @ TA
Derate above 25°C
25°C
Junction Temperature
3 Collector
.:.-EQ
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Charac:teristic
PNPSILICON
Thermal Resistance, Junction to Ambient
Refer to 2N4402 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC ~ 10 pAde, IE ~ 0)
V(BR)CBO
40
-
Vde
Emitter-Base Breakdown Voltage
(lB ~ 10 pAde, IC ~ 0)
(lB ~ 10 pAde, IC ~ 0)
V(BR)EBO
5.0
4.0
-
Charac:teristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 30 Vde, IE ~ 0)
(VCB ~ 30 Vde, IE ~ 0, TA
(VCB ~ 20 Vde, IE ~ 0, TA
ICBO
~
~
60°C)
60°C)
Vde
pAde
-
0.05
2.0
-
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 mAde, VCE ~ 1.0 Vde)
(lC ~ 100 mAde, VCE ~ 1.0 Vde)
(lC ~ 500 mAde, VCE ~ 10 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC ~ 100 mAde, IB ~ 10 mAde)
Base-Emitter Saturation Voltage
(lC ~ 100 mAde, IB ~ 10 mAde)
270
VCE(sat)
-
0.3
Vde
VBE(sat)
-
1.0
Vde
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB ~ 10 Vde, IE
(VCB ~ 10 Vde, IE
~
~
0, f
0, f
~
~
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-221
-
60
90
50
-
•
MPS6544
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Colleetor-Emitter Voltage
VCEO
45
Vdc
Colleetor-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Po
350
2.81
mW
mWf'C
Po
210
mW
TJ, Tstg
-55to +135
°c
Rating
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TA = 60°C
Operating and Storage Junetion
Temperature Range
3 Collector
.~()
2 Emitter
AMPLIFIER TRANSISTOR
NPNSIUCON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junetion to Ambient
Refer to MPSH20 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Colleetor-Emitter Breakdown Voltage
(lC = 1.0 mAde, IE = 0)
V(BR)CEO
45
-
Vdc
Colleetor-Base Breakdown Voltage
(lC = 10 ,..Adc, IE = 0)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 ,..Adc, IC = 0)
V(BR)EBO
4.0
-
Vdc
-
0.5
!£Adc
20
-
-
VCE(sat)
-
0.5
Vdc
Common-Emitter Reverse Transfer Capacitance
(VCB = 10 Vdc, IC = 0, f = 100 kHz)
Cre
-
0.65
pF
Output Admittance
(lC = 10 mAde, VCE
Yoe
-
0.10
mmhos
Vout
1.0
-
Vdc
Characteristic
OFF CHARACTERISTICS
Colleetor Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC = 30 mAde, VCE
hFE
=
10 Vdc)
Colleetor-Emitter Saturation Voltage
(lc = 30 mAde, IB = 3.0 mAde)
SMALL-5IGNAL CHARACTERISTICS
=
Output Voltage
(Vin(RMS) = 12 mY, f
10 Vdc, f
= 45 MHz)
= 45 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-222
3 Collector
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector-Emitter Voltage
Collector Current -
Continuous
IC
500
mAdc
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25'C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
·C
Symbol
Max
Unit
RruC
83.3
'C/mW
RruA(1)
200
'C/mW
Operating and Storage Junction
Temperature Range
NPN
MPS6560
~~
1 Emitter
3 Collector
PNP
MPS6562
~-fQ
'1
1 Emitter
CASE 29-04, STYLE
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1
23
AUDIO TRANSISTOR
(1) RruA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
25
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
25
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
5.0
-
Vdc
-
100
nAdc
100
nAdc
100
nAdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCB '" 20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC
lEBO
=
0)
-
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 mAdc, VCE = 1.0 Vdc)
(lC = 100 mAde, VCE = 1.0 Vdc)
(lC = 500 mAde, VCE = 1.0 VdS)
hFE
Collector-Emitter Saturation Voltage
(lc = 500 mAdc, IB = 50 mAde)
Base-Emitter On Voltage
(lc = 500 mAdc, VCE = 1.0 Vdc)
-
-
35
50
50
200
VCE(sat)
-
0.5
Vdc
VBE(on)
-
1.2
Vdc
60
-
MHz
-
30
SMALL-SIGNAL CHARACTERISTICS
fT
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vdc, f = 30 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
Cobo
=
0, f
=
100 kHz)
(2) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-223
pF
•
MPS6568A
•
thru
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAdc
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Po
350
2.8
mW
mW/,C
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
Po
1.0
8.0
Watt
mW/,C
TJ, Tstg
-55to +150
'c
Operating and Storage Junction
Temperature Range
MPS6570A
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case(l)
R(lJC
83.3
'CIW
Thermal Resistance, Junction to Ambient
R(lJA
200
'CIW
Characteristic
VHF TRANSISTOR
NPN SILICON
(1) R(lJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
I,
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
20
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
3.0
-
Vdc
-
50
nAdc
hFE
20
200
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAde)
VCE(sat)
0.1
3.0
Vdc
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.96
Vdc
375
300
800
800
-
0.65
-
3.3
6.0
20
22.5
27
28.5
4.0
4.4
5.2
5.0
5.4
6.2
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vdc, IC = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC = 4.0 mAdc, VCE
=
-
5.0 Vdc)
SMALL-8IGNAL CHARACTERISnCS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
t,.
=
100 MHz)
MPS6568A
MPS6569A. MPS6570A
Ccb
1.0 MHz, emitter guarded)
Noise Figure
(VAGC = 1.4 Vdc, RS = 50 ohms, f = 200 MHz)
(VAGC = 2.75 Vdc, RS = 50 ohms, f = 45 MHz)
MPS6568A16570A
NF
MPS6568A
MPS6569A, MPS6570A
MHz
pF
dB
FUNCTIONAL TEST
Amplifier Power Gain
(VAGC = 1.4 Vdc, RS = 50 ohms, f = 200 MHz)
(VAGC = 2.75 Vdc, RS = 50 ohms, f = 45 MHz)
Forward AGC Voltage
(Gain Reduction = 30 dB, RS
(Gain Reduction = 30 dB, RS
=
=
50 ohms, f
50 ohms, f
= 200 MHz)
= 45 MHz)
Gpe
MPS6568A
MPS6569A, MPS6570A
dB
Vdc
VAGC
MPS6568A
MPS6569A
MPS6570A
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-224
MPS6568A thru MPS6570A
AGC CHARACTERISTICS
Vee ~ 12 Vdc, Rs
FIGURE 1 -
~
50 OHMS, SEE FIGURES 9 AND 10
- - f~200MHz
-f~4SMHz
POWER GAIN
25
Oil
OS
z:
"
20
~
IS
i
10
NOISE FIGURE
!/
V
.....
"
\
J
o
Oil
OS
\ \
~I
'"
!!l
\
6.0
Vee
VAse
~
o
FIGURE 4 -
/V
' V
Vee~
l
12V
2701l
lI.!W
1
I ( 1000pf
SOil
OUTPUT
JOOOpF
I~
SOil
OUTPUT
>------I(-@
O.7·IOpF
6.0
45 MHz FUNCTIONAL TEST CIRCUIT
(UNNEUTRALIZED)
RF BEADS
1.0 pF
2.2 kll
1---::*''-+-''
RF BEADS
...
12 V
I( JOOOPF
Til'
/'
V
1.0
2.0
3.0
4.0
5.0
VAGC. AUTOMATIC GAIN CONTROL VO·LTAGE (VOLTS)
2701l
lI.!W
ItlOOOPF
SOil
INPUT
o
/
I
\I\..
!i
\
200 MHz FUNCTIONAL TEST CIRCUIT
(NEUTRALIZED)
2.2 kIl
lI.!W
\
ii:l
1.0
2.0
3.0
4.0
5.0
VAGC. AUTOMATIC GAIN CONTRO L VOLTAGE (VO LTS)
I
I
:>
'"
'"
\ '\
\
11
I
10
~
\
FIGURE 3 -
I
12
........
I
eli
-5
FIGURE 2 -
14
30
lI.!W
0.7.10 pF
B20pf
JOOOPFI1
......
1000pf11'
3901l
lI.!W
4·30 pf
390 Il
lI.!W
T, = FERRITE CORE INDIANA GEN. CORP. F·6B4
T, = 6 TURNS #16 BUSS WIRE, 10 = W'. L~ %".
T, = TOROIO 4,1 RATIO} #22 WIRE
BT-PRI 2T·SEC
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-225
•
MPS6571
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Collector-Emitter Voltage
VCEO
20
Vde
Collector-Base Voltage
VCBO
25
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
mW
Collector Current -
Continuous
Total Device Dissipation @TA
Derate above 25"C
=
25"C
PD
625
5.0
mWrC
Total Device Dissipation @ TC
Derate above 25"C
= 25"C
Po
1.5
12
mWrC
-55 to +150
"C
Operating and Storage Junction
Temperature Range
TJ, Tstg
3 Collector
~()
Watts
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R6JA
200
"CIW
Thermal Resistance, Junction to Case
R6JC
83.3
"CIW
NPN SIUCON
Refer to MPSA18 lor graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 !LAde, IE = 0)
V(BR)CBO
25
-
Vde
50
nAde
lEBO
-
-
50
nAde
hFE
250
-
1000
-
0.5
Vde
-
0.8
Vde
MHz
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vde, IC
ICBO
= 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 !LAde, VCE
-
= 5.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lc = 10 mAde, VCE = 5.0 Vde)
VBE(on)
-
tr
50
175
-
Cobo
-
-
4.5
pF
NF
-
1.2
-
dB
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 !LAde, VCE = 5.0 Vde, I
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
Noise Figure
(lC = 100 !LAde, VCE
= 20 MHz)
100 kHz)
= 5.0 Vde,
RS
=
10 kohms, f
=
100 Hz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-226
MPS6576
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mWrC
TJ, Tstg
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
.:~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
ROJC
83.3
°CiW
ROJA(1)
200
°C/mW
AUDIO TRANSISTOR
NPN SILICON
(1) ROJA is measured with the device soldered into a typical printed circuit board.
Refer to MPS3903 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
45
-
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
-
100
nAdc
hFE
100
300
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAdc, VCE
= 5.0 Vdc)
-
Collector-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
-
0.5
Vdc
Base-Emitter On Voltage(2)
(lC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
-
0.8
Vdc
100
350
MHz
12
pF
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product(2)
(lc = 10 mAdc, VCE = 5.0 Vdc, f = 100 kHz)
Output Capacitance
(VCB = 12 Vdc, IE
= 0, f =
Cobo
100 kHz)
(2) Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-227
-
MAXIMUM RATINGS
Symbol
Rating
•
Value
Unit
COllector-Emitter Voltage
MPS6601 16651
MPS6602/6652
VCEO
COllector-Base Voltage
MPS6601/6651
MPS6602I6652
VCBO
Emitter-Base Voltage
VEBO
4.0
Vde
Collector Current -
Vde
25
40
Vde
25
30
IC
1000
mAde
Total Device Dissipation @ TA
Derate above 25'C
Continuous
= 25'C
Po
625
5.0
mW
mWf'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
1.5
12
Watts
mWf'C
TJ, Tstg
-55to +150
'c
Symbol
Max
Unit
ROJC
83.3
'c/w
ROJA(1)
200
'C/W
Operating and Storage Junction
Temperature Range
NPN
MPS6601
MPS6602
PNP
MPS6651
MPS6652
1 Emitter
3 Collector
":~
, Emitter
CASE 29-04, STYLE 1 /
TO-92 (TO-226AAI
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
AMPLIFIER TRANSISTOR
(1) ROJA IS measured wIth the deVIce soldered onto a typIcal printed CirCUIt board.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
25
40
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Ic = 1.0 mAde, IB = 0)
Vde
V(BR)CEO
MPS6601/6651
MPS660216652
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
MPS6601/6651
MPS660216652
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
25
40
V(BR)EBO
Collector Cutoff Current
(VCE = 25 Vde, IB = 0)
(VCE = 30 Vde, IB = 0)
MPS6601/6651
MPS6602/6652
Collector Cutoff Current
(VCB = 25 Vde, IE = 0)
(VCB = 30 Vde, IE = 0)
M PS6601 16651
M PS6602/6652
ICEO
4.0
-
ICBO
-
-
-
Vde
Vde
!lAde
0.1
0.1
!lAde
0.1
0.1
ON CHARACTERISTICS
DC Current Gain
(lc = 100 mAde, VCE = 1.0 Vde)
(lc = 500 mAde, VCE = 1.0 Vde)
(lC = 1000 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 1000 mAde, IB = 100 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 500 mAde, VCE = 1.0 Vde)
VBE(on)
-
t,-
50
50
30
-
-
-
0.6
Vde
1.2
Vde
100
-
MHz
Cobo
-
30
pF
td
-
25
ns
tr
-
30
ns
250
ns
50
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 30 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
(VCC = 40 Vde, IC = 500 mAde,
IBI = 50 mAde,
tp "" 300 ns Duty Cycle)
ts
Fall Time
tf
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-228
-
NPN MPS6601, MPS6602, PNP MPS6651, MPS6652
FIGURE 1 - SWITCHING TIME TEST CI RCUITS
Turn'on Time
+VBB
+40V
100
100
___'-
Output
V in
tr = 3.0 ns
•
Turn-off Time
Vee
-1.0V
-, I ~I'F
L-J
100
~5.0I'sl--
T - Output
RS
100
tr"" 3.0 ns
·Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
NPN
PNP
FIGURE 2 - MPS6601 /6602 DC CURRENT GAIN
FIGURE 3 - MPS6651 /6652 DC CURRENT GAIN
300
200
200
r- r--....
-
r- 30
10
~
70
~
;
SO
VCE=IOV
TJ = 25°C
VCE=IOV
TJ = 25°C
11
100
IC. COLLECTOR CURRENT {mAl
1000
20
100
IC. COLLECTOR CURRENT {mAl
10
FIGURE 4 - CURRENT GAIN BANDWIDTH PRODUCT
FIGURE 5 -
0
1000
CURRENT GAIN BANDWIDTH PRODUCT
0
I-- t-
0
0
t"--t--
....
z
f'r--
50 t - -
--
~ 100
0
V~
/'
/
V-
/'
0
0
0
VCE=IOV
TJ = 25°C
0 - I-f = 30 MHz
-
+-1-
-
f-
0-
0
-
VCE=IOV
TJ = 25°C
f = 30 MHz
0
100
200
IC. COLLECTOR CURRENT {mAl
1000
100
200
IC. COLLECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-229
1000
NPN MPS6601, MPS6602, PNP MPS6651, MPS6652
FIGURE 6 - ON VOLTAGES
1.0
•
TJ = 25·C
0.8
~
IIIII I I I I
1.0
11111
VaE(SATI @ Ic/la - 10
f-
.,
IIIII I l J..H:tJlIf.~~JJ\lbl~
i1I
...>!:
~
,.
FIGURE 7 - ON VOLTAGES
0.6
TJ = 25·C 11111
jiffi
IIllIHI1--t-J...H1-f-t-:tjr.r+!F-tl--l--:j;..H'fHtH++++-I-tttt
va~ @1tr\1IJftt-t-++++++ttt--t+++t-H+tt
~
~O.6
.
~
I I I I II
VaE(SATI @ Ic/la = 10
0.8 f-+++rt'11
~
~+-~~~~++~*-H-++~m-~~+H+tt
~ 0.4 ~+-~~~~++~*-H-++~m-~~+H+tt
0.4
,.
0.2
VCE(SAjl
~If~
II II
o
1.0
10
0.2
VCE(SATI @ IC Iia = 10
f- f-
0~~u=~1~1~1~1~1111~~~~~u=
IIIII
100
1000
IC. COLLECTOR CURRENT (mAl
1.0
10
100
1000
IC. COLLECTOR CURRENT (mAl
NPN
PNP
FIGURE 9 - CAPACITANCE
FIGURE B - CAPACITANCE
160
80
TJ = 25·C
TJ = 25°C
"
I'...
-- --
i'-. "'-.....
'-_.
0
.-
--
-
--
~ 120
~
u
Cib- e--
z
;!:
13 80
I"'"
----
;!t
;j
.-
.;
\
40
°i'-
--
.......
r--
Cib- e--
'-. t---
Cob-
r--
Cob
50
1.0
10
15
20
30
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 10 -
20
40
50
1.0
MPS6601/6602 NOISE FIGURE
10
!
25
5.0
FIGURE 11 - MPS6661/6652 NOISE FIGURE
\
'"~ 6.0
1111
VCE = 5.0 V
f = 1.0 kHz
TA = 25·C
8.0
8.0
~
u::
\
6.0
1\
~
I =100~A
en
IC=100~A
~ 4.0
..:
z
1\
..:
z
2.0
2.0
-
o
10
100
lk
Rs. SOURCE RESISTANCE (OHMSI
10k
o
10
..... t100
lk
10k
Rs. SOURCE RESISTANCE (OHMSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-230
I III
'VCE = 5.0 V
f = 1.0 kHz
TA = 25·C
~
u::
!II
i! 4.0
20
4.0
10
II
~
10
15
2.0
3.0
YR. REVERSE VOLTAGE (VOLTS)
25
50
NPN MPS6601, MPS6602, PNP MPS6651, MPS6652
FIGURE 13 - MPS6651 16652 SWITCHING TIMES
FIGURE 12 - MPS6601/6602 SWITCHING TIMES
10 k
10 k
Id @ VSE(off) : 0.5 V
VCC - 40 V
IC/IS 10
lSI IS2
TJ 25°C
k
k
k
~ 500
k
k
-
~
:
0;
~500
Is
200
I-...
100
50
20
~
100
50
100
200
IC. COLLECTOR CURRENT (rnA)
500
.....
0
Id
20
If
0
Ir
10
10
I-- Is
.........
:200
II
.....
Id @ VSE(off) - 0.5 V
VCC-40V
IC/IS: 10
lSI: IS2
TJ : 25°C
k
10
10
1000
PNP
BASE-EMITTER TEMPERATURE COEFFICIENT
-O.S
~ -1.2
~E -1.2
G
~
~
~ -1.6
R/MlforVSE
~ -2.0
~
~
J-2.4
2.4
10
-2.S
100
1000
IC. COLLECTOR CURRENT (rnA)
~
.ti
i3
a~
FIGURE 17 - SAFE OPERATING AREA
1.0 MS
10 MS
500
_ 500
:[
te
1.O's
I'..
200
TC: 25°
~
100
50
r-....
10
1.0
-
- -
----
\
-Lo's
I'..
~ 100
a~
50
~
Current limit
20
10
1.0
5.0
10
20
40
VCE COLLECTOR - EMITTER VOLTAGE
I
I
----
---2.0
\
'" t-.....
TC=25 0 C
'-'
Thermal limit
- - - - Second Breakdown Limit
2.0
-y
~ 200
1\
MPS6601
MPS6602
~
20
100
1000
IC. COLLECTOR CURRENT (rnA)
lk
.§.
15
10
10
FIGURE 16 - SAFE OPERATING AREA
k
C(
",
R8VsforVSE
~
'"
:>
Is. BASE CURRENT (mAl
1
\
'"u
l"-
'T!'
0.1
I IIIIII
II
;=;
"'$
..,l
"
g
.
SI
"
1\
'HI.
++I
1.0
lB. BASE CURRENT (mAl
TJ: 25°C
rtI..
1I.
10
100
FIGURE 20 - THERMAL RESPONSE
~
~
1. 0
O. 7~O-0.5
O. 5
'" ~ o. 3r-!:
--"""
'"
x:
301.0
2.0
3.0
5.0 7.0 10
20
IC. COLLECTOR CURRENT (rnA)
30
50
70 100
70
i'"x:
30 , .0
2.0
3.0
20 30
5.0 7.0 10
IC. COLLECTOR CURRENT (rnA)
50
70
100
FIGURE 3 - CAPACITANCE
40
40
TJ = 25°C
~
~ 20
20
w
'"
g
1f
~
w
......... ......Cibo
10
13 8.0
;3
1f
5
'" 6. 0
r-
4.0
2·~.1
I-
'"~
10
0.5
-
-r-.
-
~~~
5.0
10
20
1.0
2.0
VR. REVERSE VOLTAGE (VOLTS)
100
1
Cibo
6.0
Cobo
4.0
50
TJ=250C
~
",'
Cabo
0.2
I
l'I-l
2.00. 1
I'
0.2
r50
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTS)
100
FIGURE 4 - SWITCHING TIMES
1000
1000
700
500
l~n~:t~V
I~]: ~~~C
300 ...........
:! 200
w
!
100
" 70
0
0
0
1010
700
500
Is
-
300
.....
0
..............
r--....
Id IiII VSE(off) • 0.5 V
20
......
0
......... ~
l"'- t--..
30
50
70
100
IC. COLLECTOR CURRENT (rnA)
..............
0
200
I,
r......
r-.......
Id IiII VSE(off)' 0.5 V
.........
r......
20
I~]: ~~~C
-..............
....... ......
-
./
......... .........
30
50
70
IC. CO LLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-242
VCC=40V
Ic/ls= 10
~
10
10
-
.........
0
0
0
If
.........
I,
r--
100
200
NPN MPS8098, MPS8099, PNP MPS8598, MPS8599
ffi
~
FIGURE 5 - THERMAL RESPONSE
1.0
~ O.
o
~
~
z
~
ffi
~
o.~=
- o.3
o.2
o. I
-
D- 0.5
-
0.1
0.0
}.
.2
0.07 - t-= 0.01
fSlNGLE
PULSE
-'=
5
~ 0.0
,--/"
3
0.0
en 0.02T ~ S:G1LE
z
~
~ 0.01.0
2.0
5.0
i
-
0.2
ffi
~~--J
JUL~J
,
-
II
20
'0
""
50
'00
II
pfnJl
200
III
'.0 k
500
ZeJCI"" ,It! • ROJC
DUTY CYCLE, D - ,,1t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT', (SEE AN-4691
TJlpk) - TC" Plpkl ZOJCItI
~Jtlt) "il"'1 ROIJAI
~JIIPkl~ TA ~ PIP~ ZOIAI" L
2.0k
5.0 k
20 k
'0 k
50k
lOOk
"TIME Im"
FIGURE 6-ACTIVE REGION, SAFE OPERATING AREA
MPS 8098, MPS 8099
FIGURE 6-ACTIVE REGION, SAFE OPERATING AREA
MPS 8698, MPS 8699
K
lK
0
500
"
r'
~
0
.........
0
'" "' I,"
~
.........
0
......
'.
0
~I'
"'
"
0
t=F=
oI - I -
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
.....
MPS 8098
~~ CURRENT LIMIT
MPS 8099o
DUTv"CYCLE.i;; 10%
1
1.0
2.0
5.0
10
20
VCE. COLLECTOR·EMITTER VOllAGE (VI
III
"
t--
20
1-
THER~AL,uMr1=
roo SECOND BREAKDOWN LIMIT
)=-'" F
PO,...
60
10
1,0
100
CURRENT LIMIT
DUTY' CYCLE .i;; 10%
2.0
III
.........
:",,!:::
MPS 8098
MPS809!-~
20
10
5.0
VCE, COLLECTOR-EMITTER VOIJAGE (VI
50
80
MPS8098, MPS8098
FIGURE 7 - DC CURRENT GAIN
400
VCE' 5.0 V
z
~ 200
-
E
~
...ac '00
a;
a;
i
80
-
TJ. '~5JC
...--
-~
-~
f..--- I--
-55°C
I-"- H-
~
-
l- t""
t-
I-rI-- f-' f-'
1-"1-
-
-.....
I--
I"-
~
\
--~
i"I
\ l
60
40
0.2
~
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
'0
IC, COLLECTOR CURRENT (mAl
20
30
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-243
50
70
~
'00
200
NPN MPSS098, MPS8099, PNP MPS8598, MPS8599
FIGURE 8 - "ON" VOL TAGES
1.0
_
~
1111
II 1111
TJ-250C
•
0.8
~c
.~
~
w
0.6
c
0.4
>
:>
--
VBE""t)@lIC/IB' 10
I II
~
~
III
~
FIGURE 9 - COLLECTOR SATURATION REGION
2.0 r-nr..,.,.1TTT..---r..-"....,..,crn..--..-...
TJ:250C
1.S t-
L lut
IJ"
1111
10mA 20 mA
I
I
50 mA
...,..,-rnn---.
III
III100 mA
I
I :III
200 mA
§! 1.2I-1-l1-iI-+tttt--+\H-\++t+lI+--+-+-it+++1-H----f
rBE @I VCpl ~.O V
~
~ 0.8 t-H+t-ilH-t--t--'H-H+Hr\---t-H+l+Hft---l
0.2
VCE(sat)@lIC/IB-l0
00•2
0.5
1.0
~
......
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mA)
50
100
8
\!\
0.4
'"
\.
H-i]j]j~~~t:10.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
w o~
~
200
0.02
lB. BASE CURRENT (mA)
FIGURE 10 - BASE·EMITTER TEMPERATURE COEFFICIENT
6 - 1.0
§;
E
~-1. 4
/
~
-
0-1.8
u
~
::>
~
lI:!
-
R/NB FORVBE
,.....
-550C TO 1250C
-2. 2
~
to -2. 6
E;
a:
-3·~.2
0.5
1.0
2.0
5.0
10
20
50
100
200
IC. COLLECTOR CURRENT (mA)
MPS8598. MPS8599
FIGURE 11 - DC CURRENT GAIN
-
300
T}= 1250C
z 200
;;:
co
ill
a:
a:
~
100
'"c
~
-
t---
t-
10
J
_ 26 C
-
VCE=~.OV
......
.........
"r'\i\
-55°C
"
\.
300.2
~
\.
50
\
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IC. COLLECTOR CURRENT (mA)
20
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-244
30
50
70
100
200
NPN MPS8098, MPS8099, PNP MPS8598, MPS8599
~ 2.0
TJ=25 0C'1111
~
r--
0
~
w
'"«
~
>
.,;
I IIII
O.B
0.6
---
JO~WiiilIC!lOI- I~
VOE@VCE-5.0V
o
V
~
w 1.6
~
II
II
!IIII \
!IIII
IC -10 m
o
>
1.2
~
Ii:
0.8
~
0.4
20mA
0.2
o
0.2
~
8
V
VCE(satl@IC/IO' 10
tl
0.5
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mAl
~
50
100
200
TJ = 25 C
0
0.02
0.05
/
U
tE
~ -1.B
~
R/N8 FORV8E
-550C TO 1250C
::::>
i
-2. 2
~
::E
~
cD -2. 6
E;
a:
0
-3. 0.2
0.5
1.0
2.0
50
5.0
10
20
IC. COLLECTOR CURRENT (mAl
lOa
200
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-245
\.
-
1.0
2.0
0.5
0.2
10. BASE CURRENT (mAl
0.1
200mA
1\
r-...
J
u
~
100mA
\
\
FIGURE 14 - BASE-EMITTER TEMPERATURE COEFFICIENT
-1.a
~-t.4
I 1111
I !III
\
0.4
>
50mA
\
\
o
~
•
FIGURE 13 - COLLECTOR SATURATION REGION
FIGURE 12 - "ON" VOL TAGES
1.0
1"-
r--
5.0
10
20
MAXIMUM RATINGS
•
Rating
Symbol
MPSA05 MPSA06
MPSA55 MPSA56
Unit
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
500
mAdc
Total Device Dissipation @TA
Derate above 25'C
Collector Current -
Continuous
= 25'C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25·C
= 25'C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
·C
Operating and Storage Junction
Temperature Range
NPN
MPSA05
MPSA06
PNP
MPSA55
MPSA56
3 Collector
~~
1 Emitter
3 Collector
~()
1 Emitter
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
RIiJC
83.3
'CIW
R8JA(I)
200
'CIW
AMPUFIER TRANSISTOR
(1) RIiJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
60
80
-
4.0
-
Vdc
-
0.1
pAdc
-
0.1
0.1
50
50
-
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 1.0 mAdc, IB = 0)
V(BR)CEO
MPSA05, MPSA55
MPSA06, MPSA56
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ICBO
MPSA05, MPSA55
MPSA06, MPSA56
Vdc
pAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 10 mAdc, VCE = 1.0 Vdc)
(lC = 100 mAdc, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
Base-Emitter On Voltage
(lC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on)
-
-
0.25
Vdc
1.2
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mA. VCE = 2.0 V, f = 100 MHz)
(lc
=
100 mAdc, VCE
=
1.0 Vdc, f
=
100 MHz)
fT
MPSA05
MPSA06
MPSA55
MPSA56
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
(2) fT is defined as the frequency at which ihfei extrapolates to unity.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-246
100
-
50
-
MHz
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
FIGURE 1 - SWITCHING TIME TEST CIRCUITS
Turn-on Time
•
Turn-off Time
Vee
-1.0 V
+VBB
+40V
100
--'o:----.,.-~ Output
-Tota(Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
FIGURE 2 - CURRENT-GAIN-BANDWIDTH PRODUCT
300
I II
_
VCE = 2.0 V
TJ = 25 0 C
),/
-
200
"N
:c
1\
I
_
g
g:
\
100
"'
:c
E;
L
70
/
~
o
~
\
...
\
50
I
Z
:;;:
to
..:. 30
~
.!:'
3.0
2.0
5.0 7.0 10
20
30
50
IC. COLLECTOR CURRENT (mA)
'"'"
13
.t:'
200
70 100
20
2.0
5.0
3.0
7.0 10
20
30
50
IC. COLLECTOR CURRENT (mA)
70
100
200
FIGURE 3 - CAPACITANCE
80
100
60
70
Cibo
40
~
..,zw
.
......,...
20
>-
u
U
r-...
-
8.0
6.0
4.0
0.1
~
0.2
~
30
>-
20
..
-
10
50
TJ = 25°C
Cibo
r-
TJ = 250 C
-r-.
r--.
z
......
U
~
;3
U
Cabo
5.0
10
0.5
1.0
2.0
VR. REVERSE VOLTAGE (VOLTS)
20
Cabo
r--..,
10
7.0
50
100
5.0
0.1
0.2
0.5
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-247
20
50
100
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
FIGURE 4 - SWITCHING TIME
1.0 k
•
1.0 k
700
500
ts
300
~
20Or-.
0
0
-"
0
.....
~
10
5.0 7.0
10
I
~
~
0.3
~
o. 2
~
z
13'"
t,
...........
V
20
30
50 70 100
IC. COLLECTOR CURRENT (rnA)
200
300
-
w
30
Vcc = 40 V
leila = 10
lal = la2
TJ = 25°C
7.0
10
-
D- 0.5
-
...........
~
tl
r.....
t,
.......... t-
20 30
50
70
100
IC. COLLECTOR CURRENT (rnA)
-
.....
0.2
-
0.1
O.
'" o.I _ ~ . I--
i
td@ VaE(oll) - 0.5 V
10
5.0
500
r-....
70
50
20
........
I........
200
300
500
FIGURE 5 - THERMAL RESPONSE
1.0
O. 7:=
0.5
;;
'"~"
"
"
2
tl
~
~
200
;;; 100
VCC=40V
Ic/la = 10
lal = la2
TJ=250C
0
0
ts
.....
"-
300
"-
td@VaE(olf)=0.5V
I III
,
~
r-....
700
500
pfflSL
-r~-J
'\~
0.0 7 - \-'= 0.01
0.05 - ..b fSlNGLE PULSE
i=
E
0.03
in 0.02 ....-"'- ~
:z
«
~ 0.0 11.0
,-r
S~GILE JULISEI
I
5.0
2.0
DUTY CYCLE. D = I1/t2
o CURVES APPLY FOR POWER
iii10
20
50
100
200
500
t.TIME Ims)
1.0 k
ZtiJCIt) = ,(t) " ROJC
PU LSE TRAIN SHOWN
READ TIME AT 11 ISEE AN·469)
TJ(pk) - TC = P(pk) ZOJC(t)
~JtlU= j(t) "I R~J~
~JIIPk) TA ~ P(Pkl ZO!A([I Ll
2.0 k
5.0 k
I
10 k
20 k
50 k
lOOk
FIGURE 6 - ACTIVE - REGION SAFE OPERATING AREA
MPSA05. MPSA06
MPSA55. MPSA56
1.0k
1.0k
700
500
<[
" "-
.§ 300
....
ffi
200
~
1.Oms
1'.
TC = 25°C"'
"
a
100
'"0
~
70
8
30
~
20
50
-
10
1.0
"-
"
TA = 25°C
- - - - Current Limit
- Thermallimlt
- - Second Breakdown limit
II I
MPSA05
MPSA06
~
70
50
8
30
~
'"
2.0 3.0
5.0 7.0 10
20
3D
50
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
'"0
....
70
100
- - - - Current limit
- Thermal Limit
- - Second Breakdown limit
1.0
II I
.....
.....
MPSA55 _
MPSA56
\
"......
~
20
30
50
2.0
3.0
5.0 7.0 10
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-248
TC = 25°C
~,
TA = 25°C
~ 20
10
"- I'.1.L
.....
I..... ·
a 100
1\
'.
......
I..... ,
~ 200
1.0m~
r-..
........
1 300
1.0 1,
......
100",
700
500
100",
70
100
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
NPN
MPSA05. MPSA06
•
FIGURE 7 - DC CURRENT GAIN
400
I
TJ·,250C
z
;;: 200
'"
I-
If-
~
a
'"'c
~
100
SO
60
40
0.5
I--
0.7
I-""
_f--
-
-
25°C
~
-55°C
-
f--
.......
I-- 1--'-"
--
g
c
2.0
1.0
I - I--r-
3.0
'"
<[
~
II 1111
II IIII
5.0
0.6
~BE:on: ~ J~~ ~11.0 V
~
'"
~
:..-- f-"
-
O.S
70
IIII
~
>
'"
0
0.05
0.1
-0.2
r-..
0.5
1.0
2.0
5.0
IC. COLLECTOR CURRENT (mAl
-O.S
~ -1.2
i-"
-1.6
~
R6\lBforVSE
~ -2.0
i
I!! -2.4
~
-2.S
0.5
1.0
2.0
./
---
5.0
10
20
50
IC. COLLECTOR CURRENT (mAl
100
200
500
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-249
-
r-
......
-r-
FIGURE 10 - BASE-EMITTER TEMPERATURE COEFFICIENT
~
200
100
IIII
I~I~ \0 rnA 5~
w
~
2.0
50
<[
0.4
1.0
~~
'"
>
>-
0.5
'"
~
FIGURE 9 - COLLECTOR SATURATION REGION
c
o
.....
............
7.0
.10
20
3D
IC. COLLECTOR CURRENT (mAl
L-
~
~
VCE 1. , .0 V
...... 1'
1.0
VBE(satl@ ICIIB· 10
w
....
~
~~ Il 250C
O.S
'
I - - r--
FIGURE 8 - "ON" VOL TAGES
1.0
-
10
20
50
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
•
PNP
MPSA55, MPSA56
FIGURE 11 - DC CURRENT GAIN
400
I
--
TJ'1250C
z
;;: 200
25°C
to
f-
ill
'"
..,'":::>
VC~ • 1.0 V
..........
~
100
~
80
f"...
I'::l\.
-55°C
-
0
40
0.5
0.7
1.0
2.0
3.0
5.0
10
7.0
20
30
Ie. COLLECTOR CURRENT ImA)
FIGURE 12 - "ON" VOLTAGES
1.0
w~ 25°C
VBElon)
t:l
to
~
~ Jc~ ~
!:;
TJ' 25°C
'"to
«
!:;
0
>
n
V
IC'IOmA-
ffi
!~
\
O.6
50 mA
100mA~
0.4
g
O. 2
..,o
j.-'-"
II
2.0
O. 2
-'
VCElsat)@ IcllB '10
5.0
10
20
50
100
IC. COLLECTOR CURRENT (mA)
200
..,W
>
500
0
0.05
r---I-
t0.1
5.0
0.5
1.0
2.0
lB. BASE CURRENT ImAl
0.2
FIGURE 14 - BASE-EMITTER TEMPERATURE COEFFICIENT
-0. 8
E-1.2
g
~ -1.6
V'
8
~
I
R8VBlorVBE
-2.0
~
'" -2.4
~
-2. 8
0.5
1.0
2.0
./
-
5.0
10
20
50
IC. COLLECTOR CURRENT (mA)
100
200
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-250
I
500 mA-
250 mA
~
oi:
1.0
500
2: O. 8
O.4
0
5.0
300
0
o
>
>-
200
in
.~ ~ I-
O. 6
100
FIGURE 13 - COLLECTOR SATURATION REGION
Il---- t-'
VBElsatl@ ICIIB '10
~~
70
~
1.0
II II
II II
0.8
50
~
::::"
500
= - I-
1\
10
20
50
MPSA12
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Collector 3
"~I
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCES
20
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
Po
625
5.0
mW
mWrC
TJ, Tstg
-55to +150
·C
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
3
Emitter 1
DARLINGTON TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Ambient
Refer to 2N64Z6 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
V(BR)CES
20
Collector Cutoff Cu rrent
(VCB = 15 Vdc, IE = 0)
'CBO
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
Characteristic
Typ
Max
Unit
-
-
Vdc
-
-
100
nAde
ICES
-
-
100"
nAdc
'EBO
-
-
100
nAdc
hFE
20,000
-
VCE(sat)
-
-
1,0
Vdc
VBE
-
-
1.4
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 pAdc, 'B = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE
=
5.0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, 'B = 0.Q1 mAde)
Base-Emitter On Voltage
(lC = 10 mAde, VCE = 5.0 Vdc)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-251
-
•
MPSA13
MPSA14
MAXIMUM RATINGS
Symbol
Value
VCES
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
Rating
Collector-Emitter Voltage
Collector Current -
Continuous
Unit
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Collector 3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R(JJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
R(JJA
200
°CIW
Characteristic
DARLINGTON TRANSISTOR
NPN SIUCON
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
-
Vde
100
nAde
100
nAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 /lAde, IB = 0)
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
-
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 10 mAde, VCE
(IC
=
100 mAde, VCE
hFE
= 5.0 Vde)
=
5.0 Vde)
MPSA13
MPSA14
5000
10,000
MPSA13
MPSA14
10,000
20,000
-
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 0.1 mAde)
VCE(sat)
-
1.5
Vde
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 5.0 Vde)
VBE
-
2.0
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 5.0 Vde, f = 100 MHz)
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(2) IT = Ihfel" ftest·
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-252
MPSA16
MPSA17
MAXIMUM RATINGS
Rating
Symbol MPS-A16IMPS-A17
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -
40
VCEO
VEBO
Continuous
12
I
Vdc
IC
100
mAdc
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mWI"C
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mWI"C
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Vdc
15
•
Unit
,/~~'-'
23
1 Emitter
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R8JA
200
°CIW
Thermal Resistance, Junction to Case
R8JC
83.3
°CIW
ELECTRICAL CHARACTERISTICS
NPNSILICON
(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
40
-
Vdc
12
15
-
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc,lc = 0)
V(BR)EBO
MPS-A16
MPS-A17
Vdc
100
nAdc
lEBO
-
100
nAdc
hFE
200
600
VCE(sat)
-
0.25
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
'CBO
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 0)
ON CHARACTERISnCS
DC Current Gain
(lC = 5.0 mAde, VCE
=
-
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAdc, IB = 1.0 mAdc)
Vdc
SMALL-SIGNAL CHARACTERISncs
Current-Gain - Bandwidth Product
(lC = 5.0 mAdc, VCE = 10 Vdc, f
Output Capacitance
(VCB = 10 Vdc, 'E
=
0, f
=
t,.
=
100 MHz)
MPS-A16
MPS-A17
Cobo
100 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-253
100
80
-
-
4.0
MHz
pF
MPSA16, MPSA17
FIGURE 1 - DC CURRENT GAIN
•
500
2~OC
TA
VCE = 10 Vdc
z
;;:
200
~
f..--
~I-
'"
a
'-'
V-
V
100
--
70
~
1II1'S'~ f...-- ~
~ l\
II
I--
50
0.05
,
r-
-
c
~
-
~
'- l- i-
to
I-
1II~S-~'1
-- -
300
0.1
0.2
2.0
1.0
05
10
5.0
50
20
IC. COLLECTOR CURRENT (rnA)
FIGURE 2 -SMALL SIGNAL CURRENT GAIN
FIGURE 3-SATURATION ANDON VOLTAGES
100 0
2.0
1-1.0 kHz
TA = 25 0 C
VCE = 5.0 Vdc
~ 100
to
I-
-'
~ 30 0
MPS.~~
0;
-'
;i 20
~
j
°v
V
V
0.3
~
1. 4
2
1. 2
w
.~
1. 0
0.5
II
1.0
3.0
5.0
7.0
V
o. Be-- r-
>"
o. 6
c
>
o.4
o.2f--
0.7
IMPtAI171
'::;
MPS.AI6
100
0.1
V
~
. /V
1
1. 6
~ 500
~ 400
to
1
1. B
0
1.0
10
VBE(on)
2.0
-
:%:
t;
:::>
c
c
f
10 0
:%:
J;
~ 70
:i
'"zI
~
3.0
50 -
::ill
'"'":::>
'-'
I
MPS.A;-
30
~iTh
50
.100
"~
w
'-'
z
;::
"
TA=25 0 C
4.0
U
~
U
TA=25 0 C
VCE =.10 Vdc
I-
~
~
t----....
2. 0
j
0.5
20
7.0
~
.......
0
0.2
10
FIGURE 5 -OUTPUT CAPACITANCE
c
J:' 20
5.0
A
10
MP~.AI61
:;;.-"
;;:
MPS.AI17
l~
10
IC. COLLECTOR CURRENT (rnA)
FIGURE 4 -CURRENT-GAIN-BANDWIDTH PRODUCT
~
MPS·AI6
VCE(~t) ~ IcilB
IC.COLLECTOR CURRENT (rnA)
N 20 0
V 1-1-"
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (rnA)
1. 0
0.4
--.... ~~
1- -
MPS'A1
MPS'A17~
0.7
1.0
2.0
4.0
7.0
10
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-254
20
40
MPSA18
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
6.5
Vdc
IC
200
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
PD
1.5
12
Watts
mW/'C
TJ, Tstg
-55to +150
'c
Operating and Storage Junction
Temperature Range
II
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
1/~~"'='
2
1 Emitter
3
LOW NOISE TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ROJC
83.3
·C/W
ROJA(1)
200
·C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPNSIUCON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
45
-
-
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
45
Emitter-Base Breakdown Voltage
(IE = 10 "Adc, IC = 0)
V(BR)EBO
6.5
-
-
ICBO
-
1.0
50
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
Vdc
Vdc
Vde
nAde
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 !lAde, VCE = 5.0 Vdc)
(lC = 100 !lAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vdc)
(lC = 10 mAde, VCE = 5.0 Vde)
hFE
400
500
SOO
500
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vdc)
580
850
1100
1150
-
-
-
-
1500
Vde
0.08
0.2
0.3
VBE(on)
-
0.6
0.7
Vde
for
100
160
-
MHz
Ccb
-
1.7
3.0
pF
Ceb
-
5.6
6.5
pF
0.5
4.0
1.5
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vdc, f
=
100 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f
=
1.0 MHz)
Emitter-Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f
=
1.0 MHz)
Noise Figure
(lC = 100 !lAde, VCE
(lC = 100 !lAde, VCE
NF
=
=
5.0 Vdc, RS
5.0 Vdc, RS
Equivalent Short Circuit Noise Voltage
(lC = 100 !lAde, VCE = 5.0 Vdc, RS
=
=
10 kO, f = 10 Hz to 15.7 kHz)
1.0 kO, f = 100 Hz)
VT
=
1.0 kO, f
=
100 Hz)
-
(1) ROJA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width .. 300 p.S, Duty Cycle .. 2.0%.
MOTOROLA SMAll-SIGNAL SEMICONDUCTORS
2-255
dB
6.5
-
nVNHz
MPSA18
FIGURE 1 - TRANSISTOR NOISE MODEL
,-----------1
I
I
Ideal
Transistor
IL ___________ -.1I
NOISE CHARACTERISTICS
(VCE
=5.0 Vdc. TA = 250 CI
NOISE VOLTAGE
FIGURE 3 - EFFECTS OF COLLECTOR CURRENT
FIGURE 2 - EFFECTS OF FREQUENCY
30
~w
'\,
20
':;
>
30
m~widt~ =: l:.J W
RS
~
r-
0
~
z
Ii
f= 10Hz /
«
~ 10
>
w
"
~ 7.0
z
£' 5.0
3.0 mA
1.0 mA'i--,
5.0
umt-J
II ill
20
300 lIA
50 100
-
100 Hz
.....
3.0
0.01
3.0
I'!-I.
-.....
......
...........
r-........
1.0
0.7
10
~
BandwIdth = 10 Hz to 15.7 kHz
I:"
8.0
~
~
20
30.A
10.A
0
50
./
TttttI V
100 200
500 1.0k 2.ok 5.0k 10k 20k SDk lOOk
f. fREQUENCY (Hz!
o
10
20
50
5oo.A
V
~
.l'Hll. Lo~
100 200 500 loOk 2.0k 5.0k 10k 20k
RS. SOURCE RESISTANCE (OHMSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-256
Ic=1.omA
I'
to:::
40
......
RS
0.1
II 11111111
12
.......
0.2
10
11111111 II 11111111
-~
"-
H~ I
5.0
J1.0mA
300.A
0.5
0.3
0.1
0.2
0.5
1.0
2.0
IC. COLLECTOR CURRENT (mAl
IL111111
:s:
16
3.0mA
2.0
~
FIGURE 5 - WIDEBAND NOISE FIGURE
IC - 10 mA
t-
"'0z
0.05
Bandwidth - 1.0 Hz
5.0
1.0 kHz
lOOk
0.02
20
......
/'
~
200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f. FREQUENCY (Hzl
7.0
.E
y
-.........::: E"'=-
FIGURE 4 - NOISE CURRENT
w
V
o
10
G
V
0
to
\.
3.0
10
!
~
~
W
10
7.0
RS
~
w
0
Ba~dwi~thl = \.~ IHlz
20
\
«
0
1116 1= 10 Im~
1\
to
I
1111
I
D•
50k lOOk
MPSA18
100 Hz NOISE DATA
FIGURE 6 - TOTAL NOISE VOL TAGE
300
II
200
IC 10
0
:;;
-=w
~
~
o
~
100
70
1=1=
Bandwidth
11/
fo
V
J
50
1.0
mA
30
Ill.
~A~
./
!flO,O:"
30"A
10 "A
/./
..J
b
•
1/
mA
1.0 Hz
~ 20
.
~~
FIGURE 7 - NOISE FIGURE
i/
./
10
t-
~ 7.0
I-
5.0
Bandwidth - 1.0 Hz
II 11111111 I
3.0
10
20
50
100 200
500 10k 2.0k
5.0k 10k 20k
10
50k lOOk
20
50
FIGURE 8 - DC CURRENT GAIN
VeE = 5.0 Volts
TA
~
o
-
z
z
~ 1.0
t-
I--
-
~ 0.5
0.4
~ 0.3
~
-
-
115'c
_1-- ....
l - I-l - i- ~
-
--
I--f-
-55°C
~ 0.7
g
0
~
.-P"
I--f-
500 1.0 k 2.0 k 5.0 k 10 k 20 k
----
4.0
~ 3.0
~ 2.0
100 200
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
RS, SOURCE RESISTANCE (OHMS)
k- I--
l- I-- ~
- --
I-
~
0.2
0.02
0.01
0.03
0.1
0.05
0.2
0.3
10
0.5
2.0
3.0
5.0
10
IC, COLLECTOR CURRENT (rnA)
FIGURE 9 - "ON" VOLTAGES
10
FIGURE 10 - TEMPERATURE COEFFICIENTS
-0. 4
II II
~ 10 i5~CI
0.8
~-o. 8
3>
IJI III
u;
c: 0.6 ~B~ ~ V~EI - 5.0 V
~
t-
ffi-l. 2
~ ~
2:
~~
w
'"~
E
u:.
0.4
8-1. 6
TJ
0
25'C to 125'C
-II
~w
",g;
o
>
>'
U?
!:<
02
~-2. 0
f-
IV~E(1at: ~ Ilf;rll~
001 0.02
005 01
0.2
-55'C to 25'C
"~ -2.4
05
1.0
2.0
50
10
20
50
100
0.01 0.02
IC, COLLECTOR CURRENf (mA)
II 1IIIIi
0.05
0.1 02
0.5
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-257
20
50 100
MPSA18
FIGURE 12 - CURRENT-GAIN-BANDWIDTH PRODUCT
FIGURE 11 - CAPACITANCE
•
8.0
60
~ 4.0
500
~
f..j.
r--- t-
~ 30
z
--
Cob
Ccb
I
........... t'-
t-- r--~ t--...
«
t-
~
Ji±l. r--.....
C.b
TJ
.1250~
./
0
Gib
1\
°v
t--... r-...
V
VI--
K
V
f\
~
2.0
;3
u
0
~ t'--
1.0
0.8
0.1
0.2
0.5
1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
0
50
100
-
VCE· 5.0 V
-
TJ'250C
I
20
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-258
30
50
70 100
MPSA20
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
4.0
Vdc
IC
100
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mWI"C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mWI"C
TJ, Tstg
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
II
CASE 29-04. STYLE 1
TO-92 (TO-226AA)
"
"~«5~"
23
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
ROJC
83.3
°e/W
ROJA(l)
200
°C/W
Refer to MPS3903 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
4.0
-
Vdc
ICBO
-
100
nAdc
hFE
40
400
-
VCE(sat)
-
0.25
Vdc
tr
125
-
MHz
Cobo
-
4.0
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 5.0 mAde, VCE
=
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 5.0 mAde, VCE = 10 Vdc, f = 100 MHz
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
(1) ROJA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width .. 300 1'5, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-259
pF
•
MPSA25
MPSA26
MPSA27
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol MPS-A25IMPS-A26IMPS-A27
Unit
Collector-Emitter Voltage
VCES
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
PD
625
5.0
mW
mW/oC
TJ, Tstg
-55to+150
°c
Collector Current -
Continuous
Total Device Dissipation
@TA= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
40
I
50
I
60
Collector 3
Vde
Emitter
1
DARLINGTON TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPNSIUCON
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 100 pAdc, VBE = 0)
V(BR)CES
MPSA25
MPSA26
MPSA27
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
40
50
60
-
-
-
-
100
100
100
-
-
500
500
500
-
-
40
50
60
V(BR)CBO
MPSA25
MPSA26
MPSA27
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
MPSA25
MPSA26
MPSA27
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
MPSA25
MPSA26
MPSA27
ICBO
ICES
Emitter Cutoff Current
(VBE = 10 Vdc)
lEBO
-
-
Vdc
Vde
nAdc
nAdc
100
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 10 rnA, VCE = 5.0 V)
(lc = 100 mA, VCE = 5.0 V)
hFE
10,000
10,000
Collector-Emitter Saturation Voltage
(lC = 100 mA, IB = 0.1 mAdc)
VCE(sat)
-
Base-Emitter On Voltage
(lC = 100 mA, VCE = 5.0 Vdc)
VBE(on)
-
SMALL-SIGNAL CHARACTERISTICS
Small Signal Current Gain
(lC = 10 mA, VCE = 5.0 V, f = 100 MHz)
(1) Pulse Test: Pulse Width", 300 p,S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-260
-
-
-
1.5
Vdc
2.0
Vde
MPSA25,MPSA26,MPSA27
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
120
r--
VCE: 5.0 V
TAl"
z 100
16
~
08
t200
10
2030
100
IC. COLLECTOR CURRENT (mAl
10
lK
2.030
FIGURE 4 -
FIGURE 3 - COLLECTOR SATURATION REGION
V
..J...I.+I1i
~cliisilf IC/IBI: 11001
0
06
500
50V
1.0
TA: -55°C
o
~
VBE(on) @ VCE
'"
~
'">
TA: 25°C
Q
•
./'
'III~
~ 12
'\
60
VBEIS) @ ICIIB : 1000
~
'\.
a:
a
u
TA: 25°C
1.4
u;
80
f--
10
2030
100
IC. COLLECTOR CURRENT (mA)
200
500
lK
HIGH FREQUENCY CURRENT GAIN
4.0
VCE - 5.0 V
j-100MH,
TA: 25°C
z
~
V
"-"
2.0
I
~
1\
'//
1.0
r-..
~ 0.8
~ 0.6
~
0.100.20
050 1.0 2.0
5.0 10 20
lB. BASE CURRENT ("AI
50 100 200
0.4
0.2
0.5
500 lK
2.0
1.0
50
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
1000
....
500
~
1
200
1.0m~100"s
....
-t;-<$oc
,
r-- TA: 25°C
~
50
8
E
20
-
-
1.0 s
1\
"
.... ,
=>
100
a:
u
ti
10
20
50
Ie. COLLECTOR CURRENT (mAl
,
CURRENT LIMIT
- THERMAL LIMIT
SECOND BREAKDOWN LIMIT
....
,
... "-
III
10
1.0
2.0
4.0
6.0
10
20
...
....
...
40 5060
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-261
100
200
500
•
MPSA28
MPSA29
MAXIMUM RATINGS
Symbol
Rating
MPSA28 MPSA29
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Unit
100
Vdc
100
Vdc
Collector-Emitter Voltage
VCES
80
Collector-Base Voltage
VCBO
80
Emitter-Base Voltage
VEBO
12
Vdc
mAde
Collector 3
IC
500
Total Device Dissipation @ TA
Derate above 25"C
~
25"C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25"C
~
25"C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to+l50
"C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
"I
3
THERMAL CHARACTERISTICS
Emitter
1
Symbol
Max
Unit
DARLINGTON TRANSISTOR
Thermal Resistance, Junction to Case
R()JC
83.3
"C/W
NPN SILICON
Thermal Resistance, Junction to Ambient
R()JA
200
"C/W
Characteristic
ELECTRICAL CHARACTERISTICS
(TA ~ 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ~ 100 pAdc, VBE ~ 0)
V(BR)CES
MPSA28
MPSA29
Collector-Base Breakdown Voltage
(lC ~ 100 pAdc, IE ~ 0)
80
100
V(BR)CBO
MPSA28
MPSA29
Emitter-Base Breakdown Voltage
(IE ~ 10 pAdc, IC ~ 0)
Both Types
Collector Cutoff Current
(VCB ~ 60 Vde, IE ~ 0)
(VCB ~ 80 Vde, IE ~ 0)
MPSA28
MPSA29
Collector Cutoff Current
(VCE ~ 60 Vde, VBE ~ 0)
(VCE ~ 80 Vdc, VBE ~ 0)
MPSA28
MPSA29
80
100
V(BR)EBO
ICBO
ICES
Emitter Cutoff Current
(VBE ~ 10 Vdc, IC ~ 0)
lEBO
Both Types
12
-
Vdc
-
-
-
Vde
Vde
nAdc
-
-
10,000
10,000
-
-
0.7
0.8
1.2
1.5
1.4
2.0
Vdc
-
-
100
100
nAde
500
500
100
nAdc
ON CHARACTERISTlCS!11
DC Current Gain
(lC ~ 10 mAde, VCE ~ 5.0 Vde)
(lc ~ 100 mAde, VCE ~ 5.0 Vdc)
Both Types
Both Types
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 0.01 mAde)
(lC ~ 100 mAde, IB ~ 0.1 mAde)
Both Types
Both Types
Base-Emitter On Voltage
(lC ~ 100 mAde, VCE ~ 5.0 Vde)
Both Types
hFE
VCE(sat)
VBE(on)
-
-
Vdc
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC ~ 10 mAde, VCE ~ 5.0 Vdc, f ~ 100 MHz)
Both Types
Output Capacitance
(VCB ~ 10 Vdc, IE
Both Types
~
0, f
~
100 kHz)
fT
125
200
-
MHz
Cobo
-
5.0
8.0
pF
(1) Pulse Test: Pulse Width .. 300 p,s, Duty Cycle .. 2.0%.
(2) fT ~ hfe' ftest·
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-262
MPSA28, MPSA29
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - ON VOLTAGES
VeE - 5.0 V
200
-
z
g
I--
I--TA = 125°e
F
25°e
r=TA
.......
>-
'"
'"
'"
B
'-'
'"
~
f=
10
20
~TA - 55°C
'"~
14
co
12
::;
0
>
-
5.0
10
20
50
100
IC, COLLECTOR CURRENT (rnA)
200
500
Ik
II
II
~
I-Io
iii
13
f-e~c lor JCE1(S\
~ -20
II
,......1-'
I-
ffi
25°C 10 125°C
~
-4.0 I- eva for VaE
s;
I I Ii
-5.0
1.0
2.0
-
~
~
1.6
....
"
r-- TA = 25°C
::>
'-' 100
0
'"
~
S
50
::1
Ik
1-',......1-'
\
\
IC = 100 rnA
t; 1.2
IC = 250
mA~t++It!I--I
~
S
tJ O.B H.....-TmHtt-#4i±I:IJ*....+lT!911~ttttttttlH
II
200
0.4 '::0'::2~...u.J.1I".0:-'::2":.0..J.JWJ.J.11""0....L2"'-0-'-u..LJJI""0-0"'-2"'-00-'-LJ..lJ.L.U
lk....J1.5k
500
la, aASE CURRENT (MA)
FIGURE 6 - HIGH FREQUENCY CURRENT GAIN
10
500
>- 200
500
f++1-t+tHt+HH-ll+tlrH+t+t+ttt-+-t\ IC = 500 rnA
'"o
Ik
g§
200
1{'~I~~otr+~~~rH~-H-H+#~
!:3 20
FIGURE 5 - ACTIVE REGION - SAFE OPERATING AREA
1!'i
10 20
50 100
IC, COLLECTOR CURRENT (rnA)
~
;,....-
50
10
20
50
100
'e, COLLECTOR CURRENT (rnA)
50
1TT1lIITTTl
l l r 1-rrnnr-r-'---'---'TTTT11rrn-""-rTTTr-l
55°C 10 25°C
~
u..
L
.....
20
in
~
-3.0
VCE(S) @ Ic/'a = 1.0 k
FIGURE 4 - COLLECTOR SATURATION REGION
-55°C to 25°C
S
VaE(ON) @ VCE = 5.0 V1
2.4 rrTTT
~
2~0~ to 112~01C I
~
Ik::?
IIIIIIII
10
FIGURE 3 - TEMPERATURE COEFFICIENTS
00
..-.§.
-
06
20
--
I0
OB
20
10
!Ii;
TA=25°C
i
~ 0.5
,
.~ ~
",-"
,
'"
~,
"'~
col~
50
-
,.-
...
t; 1.0
I
2.0
a'"
co
:i:
'"
:: 0.2
1. 0.1
100
0,3 0.5
1.0
2.0
5,0 10 20
'C, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-263
50
100
200300
•
•
MPSA42
MPSA43
MAXIMUM RATINGS
Symbol
MPSA42
MPSA43
Unit
Collector-Emitter Voltage
Rating
VCEO
300
200
Vdc
Collector-Base Voltage
VCBO
300
200
Vdc
Emitter-Base Voltage
VEBO
6.0
Collector Current -
Continuous
6.0
Vdc
IC
500
mAde
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
625
5.0
mW
mWI'C
Total ·Device Dissipation @ TC
Derate above 25'C
=
Po
1.5
12
Watts
mWI'C
TJ, Tstg
-55 to +150
·C
25'C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~()
1 Emitter
HIGH VOLTAGE TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RWC
83.3
'CIW
Thermal Resistance, Junction to Ambient
RWA
200.
'CIW
ELECTRICAL CHARACTERISTICS (TA
NPN SILICON
= 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
300
200
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 I'Adc, IE = 0)
V(BR)CEO
MPSA42
MPSA43
Vdc
V(BR)CBO
MPSA42
MPSA43
Emitter-Base Breakdown Voltage
(IE = 100 !LAdc, IC = 0)
300
200
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
ICBO
MPSA42
MPSA43
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
(VBE = 4.0 Vdc, IC = 0)
lEBO
MPSA42
MPSA43
Vdc
6.0
-
Vdc
!LAdc
-
-
0.1
0.1
-
0.1
0.1
25
40
-
!LAde
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 1.0 mAdc, VCE
(lC = 10 mAde, VCE
(lC = 30 mAde, VCE
hFE
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
40
Collector-Emitter Saturation Voltage
(lc = 20 mAdc, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Sati.i'ration Voltage
(lC = 20 mAde, IB = 2.0 mAdc)
Vdc
VBE(sat)
-
fr
·50
MPSA42
MPSA43
-
0.5
0.4
0.9
Vdc
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 20 Vdc. f = 100 MHz)
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f
=
Ccb
1.0 MHz)
MPSA42
IVlPSA43
(1) Pulse Test: Pulse Width", 300 I's, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-264
-
pF
3.0
4.0
MPSA42, MPSA43
-- --
FIGURE 1 - DC CURRENT GAIN
200
j
T}o+I~ r-- r-- I -
VCE - 10 Vd,
0
0
20
1.0
---
,..I--- ~
25'C
-...... I'.
I--
........ ~
~
r- r-
I
~ r--
~
1'\
\
-55'C
~
'1
1
2.0
13.0
\
5.0
7.0
10
30
20
50
70
100
IC, COLLECTOR CURRENT (rnA)
FIGURE 2-CAPACITANCES
FIGURE 3 -CURRENT-GAIN-BANDWIDTH PRODUCT
~100
10 0
~
~ 70
o
C,b
u.
.!!- 20
~
~50
--!--
o
~
z
;01 0 ......
./
~ 30
U
Z
~
Cob
2.0
~
r--.
r0.5
1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE IVOLTS}
50
100
'"u
J:'
200
10
1.0
2.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT (rnA)
500
1.2
TJ=25'C
1. 0
I I I
I I I
~ o. 8
g
~ o.6
>
3.0
V8EI ..;}
~ 'C~'8 = 10
VBElon}
@I
VCE = 10 V
I I IIIII
0.4
,;
200
-
2.0
~~
30
~
50
1:l
20
'"
0
~
5.0
~1
8
E2. 0
5.0
3.0
5.0 7.0 10
20
IC. COllECTOR CURRENT IrnA)
IV"
TC.250C
"
'I.
·I.Oml-
1-,
J.
9
1.0
100
IOO",~IO",-
"-
TA = 25°C
!1O0
I:--:::t-
V~EI~}@lI'Ci,~=',~
0.2
50 70
FIGURE 5 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
1.4
~
TJ = 25°C
VCE = 20 V
1=20MH,
20
FIGURE 4 - "ON" VOLTAGES
0
V
/'
I
5.0
0.>'
1. 0
0.2
V
I-
w
u
::~
.-
I-
0
50
lOOms
-
.....
CURRENT LIMIT
• THERMAL LIMIT
IPULSE CURVESGHC=250C}
SECOND BREAKDOWN LIMIT
f-- Curves apply
f-- below ..ted VCEO
I.0
J.
O.5 0.5
70 100
1.0
Z.O
5.0
10
20
50 100
200
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS}
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2·265
Mps·A43'" tMPS-A4Z= i!!!
SOD
•
•
MPSA44
MPSA45
MAXIMUM RATINGS
Symbol
Rating
MPSA44 MPSA45
Unit
Collector-Emitter Voltage
VCEO
400
350
Vdc
Collector-Base Voltage
VCBO
500
400
Vdc
6.0
6.0
Vdc
Emitter-Base Voltage
VEBO
IC
300
mAdc
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
625
5.0
mWrC
Total Device Dissipation @ TC = 25'C
Derate above 250C
Po
1.5
12
mWrC
-55 to +150
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
~()-
mW
"
Watts
23
1 Emitter
HIGH VOLTAGE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
·C/W
Thermal Resistance, Junction to Ambient
R8JA
200
·C/W
Characteristic
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Mex
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
MPSA44
MPSA45
Collector-Emitter Breakdown Voltage
(lC = 100 pAde, VBE = 0)
400
360
V(BR)CES
MPSA44
MPSA45
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
500
400
V(BR)CBO
MPSA44
MPSA45
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
500
400
V(BR)EBO
Collector Cutoff Current
(VCB = 400 Vde, IE = 0)
(VCB = 320 Vde, IE = 0)
ICBO
MPSA44
MPSA45
Collector Cutoff Current
(VCE = 400 Vde, VBE =0)
(VCE = 320 Vde, VBE = 0)
ICES
MPSA44
MPSA45
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
lEBO
6.0
-
Vdc
Vde
Vde
Vde
pAde
-
-
0.1
0.1
nAde
500
500
0.1
pAde
-
-
0.4
0.5
0.75
Vde
0.75
Vde
pF
ON CHARACTERISTlCS(l)
DC Current Gain(l)
Collector-Emitter Saturation Voltage(l)
Base-Emitter Saturation Voltage
(lC
=
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 50 mAde, VCE = 10 Vde)
(lC = 100 mAde, VCE = 10 Vde)
hFE
(lc = 1.0 mAde, IB = 0.1 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
10 mAde, IB
=
1.0 mAde)
40
50
45
40
200
-
VBE(sat)
-
Cobo
-
7.0
Cibo
-
13
pF
2.0
-
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
(VCB = 20 Vde, IE
Input Capacitance (VEB = 0.5 Vdc, IC
Small-Signal Current Gain
(lC
=
10 mAde, VCE = 10 Vde, f
=
10 MHz)
hfe
(1) Pulse Test: Pulse Width .. 300 p.S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-266
MPSA44, MPSA45
FIGURE 1 -
J I III
140
TA = 125°C
.
'"
!:l
~ 0.40
l-
i3 80
60
TA = 25°C
II
>
'"
2.0
5.0
~ 0.10
~
TA = -55°C
10
20
50
100
IC. COLLECTOR CURRENT (mA)
I 11111
~
VaE(S)
~
>
@
lll~ I~
111111 II II
VCE(S)
0.2
@
- 300
1200
>-
100
300
lk
3k
lB. BASE CURRENT (IlA)
10k
50k
I-
a
a;
""
~ 20~~=+++~#=~="4s~~t=~~~
V
~
g
Ic/la - 10
.9
l
1.0
3.0
10
30
IC. COLLECTOR CURRENT (mA)
100
11:.= 25°C........"Ist10f~~++~
~ 1.0 S I,
I'...
TA = 25°C
100~11111111~
g;
==
1°'~~;:::11'1"'1
--Current limit
Secondary Breakdown Limit
;:::
2 0 f----+-_-f---_T+-he-+'m--'a-+I.....
lim.,..i~t--4--+--++1-. MPS;A45.... ~ k;
-nV,lid fOI Outy Cycle .. 10'1(+MPS-A44;;;:~~
1.0 ,-:-"--::'-::-,--,-:~..u:::---'----!-:----'---'-:'::--:-:::--:-!::--=~
1.0 2.0
50
10
20
50 100 200
500
VCE. COLLECTOR VOLTAGE (VOLTS)
11111111 II II
0.3
30
1.0ms~001lS
ft:
111111 II II
0.4
10
1ooo~nll~ai!m
I
Ic/la = 10
va=n;
......
.....
FIGURE4 - ACTIVE REGION - SAFE OPERATING AREA
IIIII~ r1
-
0.0
200 300
III II 11111111
TA = 25°C
0.8
~
TA' 25°C
t;
8
FIGURE 3 - ON VOLTAGES
~
\
\
0
1.0
to
0.30
0.20
•
111111
IC' 50mA
JI
~
1!l
\
40
c;;
~ 0.6
I III
IC'IOmA
""
\
fo1.0
Jill
Ic·1.0mA
~
13
0
-
-
100
20
c;;
VCE=10V
1
;
0.50
LI
LI
z 120
'"c
FIGURE 2 - COLLECTOR SATURATION REGION
DC CURRENT GAIN
160
300
FIGURE 6 -
FIGURE 5 - CAPACITANCE
100
HIGH FREQUENCY CURRENT GAIN
10
.
Cib
50
z
to
>-
~
z
20
E10
§
5.0
2.0
-
~
Cob
to
u;
:::':
3.0
'"
VCE=10V
f = 10 MHz
TA = 25°C
-
:;; 2.0
TA = 25°C
Ti
f
1.0
0.3 0.5
~
a
1.0
r-
'"
-;,
:c 1.5
~
=lrT
1.0
3.0
10
30
REVERSE alAS (VOLTS)
100
300
0.1
I-"
0.2 0.3
--I-"'"
1.0
3.0
10
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-267
30
100
MPSA44, MPSA45
FIGURE 7 - TURN-ON SWITCHING TIMES AND TEST CIRCUIT
•
10
5.0
L"2.0
1'-...
1"-
......
I-Vcc = 150 V
I-Iclla = 10
0.2 I- TA = 25°C
I- VSE(OFF) = 4.0 Vdc
0.1
3.0
1.0
0---1--+-----+---
"
'"
Ir
~
-4.0 V
"""
10
30
IC. COLLECTOR CURRENT (rnA)
Vcc
100
50
FIGURE 8 - TURN-OFF SWITCHING TIMES AND TEST CIRCUIT
10
5.0
" "'0.5
-
0.2
0.1
-
1.0
-
Is
c-...
........
If
VCC=150V
ICIIS = 10
TA = 25°C
3.0
Vcc
10
30
IC. COLLECTOR CURRENT (rnA)
50
100
Vaul
*
---I
Cs E; 4.0 pF*
I
*10t81 Shunt Capacitance or Test Jig and Connectors.
____ JI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-268
MPSA55, MPSA56
For Specifications,
See MPSA05, MPSA06 Data
MPSA62
MPSA63
MPSA64
MAXIMUM RATINGS
Rating
Symbol
MPSA62 MPSA63
MPSA64
Unit
Collector-Emitter Voltage
VCES
20
30
Vde
Collector-Base Voltage
VCBO
20
30
Vde
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55 to +150
°C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Collector 3
"3
THERMAL CHARACTERISTICS
DARLINGTON TRANSISTOR
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIIJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RIIJA
200
°CIW
PNPSILICON
Refar to MPSA75 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 !LAde, VBE = 0)
Vde
V(BR)CES
MPSA62
MPSA63, MPSA64
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
(VCB = 30 Vdc, IE = 0)
20
30
ICBO
MPSA62
MPSA63, MPSA64
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
-
nAde
-
-
100
100
-
100
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 10 mAde, VCE
(lC
=
hFE
=
100 mAde, VCE
5.0 Vde)
=
5.0 Vde)
MPSA63
MPSA64
MPSA62
5000
10,000
20,000
-
MPSA63
MPSA64
10,000
20,000
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.01 mAde)
(lC = 100 mAde, IB = 0.1 mAde)
MPSA62
MPSA63, MPSA64
Base-Emitter On Voltage
(lC = 10 mAde, VCE = 5.0 Vde)
(lC = 100 mAde, VCE = 5.0 Vde)
MPSA62
MPSA63, MPSA64
VCE(sat)
VBE(on)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Produet(2)
(lC = 100 mAde, VCE = 5.0 Vde, f = 100 MHz)
MPSA63, MPSA64
(1) Pulse Test: Pulse Width", 300 ,..s, Duty Cycle'" 2.0%.
(2)fT = Ihfel· ftest·
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-269
-
Vde
-
1.0
1.5
-
1.4
2.0
Vde
•
MPSA70
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAde
Po
625
5.0
.mWrC
1.5
12
mWrC
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
= 25°C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
CASE 29-04, STYLE 1
TO-92 (TO-226AAJ
1/~()'-
mW
Watts
+ 150
2
1 Emitter
3
·C
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R8JA
200
'CiW
Thermal Resistance, Junction to Case
R8JC
83.3
.c!w
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
V(BR)EBO
4.0
-
Vdc
-
100
nAdc
hFE
40
400
-
VCE(sat)
-
0.25
Vdc
IT
125
-
MHz
Cobo
-
4.0
pF
Characterfstic
OFF CHARACTERISncS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
ON CHARACTERISncs
DC Current Gain
(lC = 6.0 mAde, VCE
=
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
SMALl-SIGNAL CHARACTERISnCS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
=
100 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-270
MPSA75
MPSA77
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
I
I
Symbol
MPSA75
Collector-Emitter Voltage
VCES
40
Emitter-Base Voltage
VEBO
10
Vdc
IC
500
Adc
625
5.0
mW
mWrC
-55to +150
°c
Collector Current -
Continuous
Total Device Dissipation
@TA ~ 25°C
Derate above 25°C
MPSA77
Unit
60
Vdc
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
Collector 3
,,1
3
Emitter
1
DARLINGTON TRANSISTOR
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
Characteristic
t
t
Symbol
Min
Typ
Max
Unit
Off CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ~ 100 I-lAdc, VBE ~ 0)
V(BR)CES
MPSA75
MPSA77
Collector-Base Breakdown Voltage
(lC ~ 100 I-lAdc, IE ~ 0)
ICBO
Collector Cutoff Current
(VCE ~ 30 V, VBE ~ 0)
(VCE ~ 40 V, VBE ~ 0)
(VCE ~ 50 V, VBE ~ 0)
ICES
Emitter Cutoff Current
(VBE ~ 10 Vde)
lEBO
-
100
-
-
40
-
60
Collector Cutoff Current
(VCB ~ 30 V, IE ~ 0)
(VCB ~ 40 V, IE ~ 0)
(VCB ~ 50 V, IE ~ 0)
-
-
V(BR)CBO
MPSA75
MPSA77
-
40
60
Vdc
Vdc
nAdc
-
-
-
-
-
500
-
100
-
-
nAdc
-
-
nAde
ON CHARACTERISTICS
DC Current Gain
(IC ~ 10 mA, VCE ~ 5.0 V)
(lc ~ 100 mA, VCE ~ 5.0 V)
hFE
10,000
10,000
Collector-Emitter Saturation Voltage
(lc ~ 100 mA. IB ~ 0.1 mAde)
Base-Emitter On Voltage
(lc ~ 100 mA, VCE ~ 5.0 Vdc)
VCE(sat)
-
-
1.5
Vde
VBE
-
-
2.0
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - High Frequency
(lC ~ 10 mA, VCE ~ 5.0 V, f ~ 100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-271
-
MPSA75, MPSAn
FIGURE 1 - DC CURRENT GAIN
200
•
TA = 125°C
I
i2 100
-
70
C!
~ 50
z
- --
25°C
~
30
i :s
l-
'-
1-- I-"
20
_
10
;
1.0
5. 0
. ..,10 V
'"
,
VCE=2.0V
5.0 V i.e:::
r-
'\
,,",
"-
-55°C
'"
3.0
2. 0
0.5
0.3
0.7
1.0
3.0
2.0
5.0
7.0
10
30
20
50
70
100
200
300
IC. COLLECTOR CURRENT (mAl
FIGURE 2 - "ON" VOLTAGE
2.0
1111
II
TA = 25°C
FIGURE 3 - COLLECTOR SATURATION REGION
II
:
2
-
I
VCE(sa!)@IC/la
=1000
Iclla = 100_
1.8
~
1.4
~
1.2
0.5
1.0
2.0 3.0 5.0
10
20 30 50
IC. COLLECTOR CURRENT (rnA)
100
4.0
I
3.0
2.0
a
i
~
1.0
B
0.8
0.1 0.2
300 mAl
175 rnA
1\
~
1\
I'-
0.5 1.0 2.0
5.0 10 20
50 100 200 500 lK 2K
FIGURE 5 - ACTIVE REGION. SAFE OPERATING AREA
1000
,
100 !'
10 ms
<"
V
E
~
~
:::j
u
10
20
50
100
5.0
IC. COLLECTOR CURRENT (rnA)
200
10
1.0
lK
....
....
25°C ~
~~"
1\
"
;to£,
'\.
....
- CURRENT LIMIT
THERMAL LIMIT
-I-- ~ECO.NO .B~E~K~q~1N lIjlT
(DUTY CYCLE" 10%)
-1--'
20
4.0
6.0
10
20
VCE. COLLECTOR VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-272
1.0 s
-
~ 20
500
TA
....
\
50
o
\
2.0
.... ....
ia loa t===== t==
'"
~
1'0.2
300
;:- 200
1\
... 04
5K 10K
lB. BASE CURRENT (.A)
:c
1.0
100mA
> 0.6
200 300
VCE = 5.0 V
f 100 MHz
TA = 25°C
1.0
o. 1
50 rnA
~
o
r-
10.0
~
IC= lOrnA
~
FIGURE 4 - HIGH FREQUENCY CURRENT GAIN
~
1.6
o
>
~
0.3
I
to
0.4
o
T~ '= ~J~t
1\
o
IIJaE(~)@ I!/I~ =ll~O ...... ~'1
/
~aE(LI ~ V~El.ill
~
6
8
~ 2.0
....
"
40
60
MPSA92
MPSA93
MAXIMUM RATINGS
Rating
Symbol
MPSA92 MPSA93
Unit
Collector-Emitter Voltage
VCEO
300
200
Vde
Collector-Base Voltage
VCBO
300
200
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
I
3 Collector
2J?\
J.
Bas~
•
12
1 Emitter
3
HIGH VOLTAGE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R(JJC
B3.3
°CIW
Thermal Resistance, Junction to Ambient
R(JJA
200
°CIW
Characteristic
ELECTRICAL CHARACTERISTICS (TA
=
PNP SILICON
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 !lAde, IE = 0)
V(BR)CEO
MPSA92
MPSA93
300
200
-
5.0
-
300
200
V(BR)CBO
MPSA92
MPSA93
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 160 Vde, IE = 0)
'CBO
MPSA92
MPSA93
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
-
Vde
Vde
Vde
!lAde
0.25
0.25
0.1
!lAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
hFE
(lC = 30 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
Both Types
Both Types
25
40
MPSA92
MPSA93
25
25
VCE(sat)
VBE(sat)
-
fr
MPSA92
MPSA93
Base-Emitter Saturation Voltage
(Ie = 20 mAde, 'B = 2.0 mAde)
-
-
Vde
0.5
0.4
0.9
Vde
50
-
MHz
-
6.0
8.0
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f = 1.0 MHz)
Ceb
MPSA92
MPSA93
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-273
pF
MPSA92, MPSA93
FIGURE 1 - DC CURRENT GAIN
15 0
•
V~E - \0 V~c
TJ =+125'C
100
_+25'C
0
~
........
0 - _-55'C
~~
1,\
0
~~
""1'\1'\
0
15
1.0
2.0
5.0
3.0
10
7.0
20
30
80
50
100
IC. COLLECTOR CURRENT (mA)
FIGURE 3 - CURRENT -GAIN-BANDWIDTH PRODUCT
FIGURE 2-CAPACITANCES
10 0
::r: 100
0
~ 80
t;
I
Cib
~
~
."
w
~
c.:i
TJ 25'C
r- VCE = 20 Vdc
60
0-
r-..
10
e
40
~
30
~
'\.
\
./
:<:
0_1-
Z
t;
r-
r-..
./
V
I
z
5. 0
;;:
2. 0
'ffi"
'"
r-
1. 0
0.1
.0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
20
~
"
Cib l
"
.i
500 1000
0
1.0
5.0
2.0
VR. REVERSE VOLTAGE (VOLTS)
5e
-
100",-
-
V8~ @J CE 1= Jo ~
-
~ o. 6
~>
>-
;;: 200
.5........
0-
~-
100
'"e
50
~
8
O.4
0
1.0
~
i3
o. 2
VCE(",)@IC/IB=10mA
2.0
5.0
100
500
II
II
o. 8
50
20
FIGURE 5 - ACTIVE-REGION SAFE
OPERATING AREA
FIGURE 4 - "ON" VOLTAGES
1.0
10
IC. COLLECTOR CURRENT (mA)
II II
10
20
20
10
50
100
,
,
~'I~~t~J~~~~~~5'i?-
!2
~
"\
5.0
3.0
1.0ms
"""
,
I'.
M S-A92~
625 mW THERMAL
!~
LIMITATION@TA=25'C
'.
- - -BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ-150'C
5.0
10
20
30
1\
MPS-A93~ ~
"
50
100
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC. CO LLECTO R CU RRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-274
\
~
~
~
200
300
MPSD55
MAXIMUM RATINGS
SymbDI
Value
Unit
CDllector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Collector Current -
IC
600
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Continuous
Po
625
5.0
mW
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWfC
Operating and Storage Junction
Temperature Range
TJ, Tstg
~55to
+150
11
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
°c
1 EmItter
THERMAL CHARACTERISTICS
Characteristic
SymbDI
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
°CIW
Thermal Resistance, Junction to
Ambient(l)
R8JA
200
°CIW
AMPLIFIER TRANSISTOR
PNP SILICON
Refer tD 2N4400 IDr MPSD05 graphs.'
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
SymbDI
Min
Max
Unit
,Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, 'B = 0)
V(BR-lCEO
25
-
Vde
Collector-Base BreakdDwn Voltage
(lC = 10 /-lAde, IE = 0)
V(BR)CBO
25
-
Vde
Collector Cutoff Current
(VCE = 20 Vde)
ICEO
-
1.0
/-lAde
Collector Cutoff Cu rrent
(VCB = 20 Vde, IE = 0)
ICBO
-
1.0
/-lAde
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
-
100
nAde
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS(21
DC Current Gain
(lc = 50 mAde, VCE = 5.0 Vde)
(lC = 100 mAde, VCE = 5.0 Vde)
(lC = 500 mAde, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc = 100 mAde, IB = 10 mAde)
VCE(sat)
80
30
-
-
0.5
50
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (lc = 50 mAde, VCE = 10 Vde,
I = 100 MHz)
(1) R8JA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width.;; 300 !LS, Duty Cycle.;; 2.0%.
"Refer to 2N4402 lor MPSD55 graphs.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-275
-
Vde
•
MPSH04
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
80
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAde
Collector Current -
Continuous
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Total Device Dissipation @ TA
Derate above 25'C
=
26'C
PD
625
5.0
mW
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
PD
1.5
12
Watt
mWI'C
TJ, Tstg
-55to +150
'c
Symbol
Max
Unit
Rwe
83.3
'CIW
RWA(1)
200
'CIW
Operating and Storage Junction
Temperature Range
., ~()"-'
23
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1 Emitter
AMPLIFIER TRANSISTOR
NPNSILICON
(1) RWA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
80
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 !LAde, IE = 0)
V(BR)CBO
80
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 !LAde, IC = 0)
V(BR)EBO
4.0
-
-
Vde
-
-
50
nAde
-
50
nAde
-
120
-
-
0.25
80
-
-
Ceb
-
-
1.6
pF
hoe
-
-
5.0
ILmhos
NF
-
-
2.0
dB
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC = 1.5 mAde, VCE
=
hFE
10 Vde)
30
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
Vde
SMALL-5IGNAL CHARACTERISTICS
Crrent-Gain - Bandwidth Product
(lC = 1.5 mAde, VCE = 10 Vdc, f
=
tr
100 MHz)
Collector-Base Capacitance
(VCB = 10 Vde, f = 1.0 MHz)
Output Admittance
(lc = 1.5 mAde, VCE
=
10 Vde, f
Noise Figure
(lC = 1.5 mAde, VCE
=
10 Vdc, RS
=
1.0 kHz)
= 50 ohms, f =
1.0 MHz)
MPSH04
(2) Pulse Test: Pulse Width", 300 ILs, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-276
MHz
MPSH07
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vde
Collector-Emitter Voltage
VCEO
30
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
Po
350
2.81
mW
mWI'C
TJ, Tstg
-55 to +150
'C
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Operating and Storage Junction
Temperature Range
~()-
"
23
' Emitter
,FMNHF TRANSISTOR
THERMAL CHARACTERISTICS
NPNSILICON
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
30
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
V(BR)EBO
3.0
-
ICBO
-
50
nAde
20
-
-
-
0.9
Vde
400
-
MHz
0.3
pF
3.0
dB
Max
Unit
OFF CHARACTERISncs
Collector Cutoff Cu rrent
(VCB = 15 Vde, IE = 0)
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE
hFE
=
10 Vde)
Base-Emitter On Voltage
(lC = 3.0 mAde, VCE = 10 Vde)
VBE(on)
SMALL-8IGNAL CHARACTERISnCS
Current-Gain - Bandwidth Product
(lC = 3.0 mAde, VCE = 10 Vde, f
=
tr
100 MHz)
Collector-Emitter Capacitance
(VCE = 10 Vde, IB = 0, f = 1.0 MHz, base guarded)
Noise Figure
(lC = 3.0 mAde, VCB
Cee
(Crb)
NF
=
10 Vde, RS
= 50 Ohms, f =
-
100 MHz)
FUNcnONAL TEST
Common-Emitter Amplifier Power Gain
(lC = 3.0 mAde, VCB = 10 Vde, RS = 50 Ohms, f
(lc = 3.0 mAde, VCB = 10 Vde, RS = 50 Ohms, f
Forward AGC Current
(Gain Reduction = 30 dB, RS
= 50 Ohms, f =
Gpb
= 100 MHz)
= 200 MHz)
IAGC
100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-277
18
14
-
6.5
8.5
dB
mAde
•
MPSH07
•
-
40
:s
z
;;:
to
,
-
TO
iii
9.0
20
'"
w
;0:
~f
B.O
I-iii
t-- ~ b-
to-
0
7.0
:::>
6.0
[I
to
"'"
~
z
:s
w
a:
~~
...... ~
~
if
1/
u: 5.0
w
'"i5
4.0
z
~z 3.0
2.0
"-..
:IE
:IE
8
-20
~
to
/'j
'" ......... - .... '/
"
.......
-'"
1.0
-40
5.0
6.0
4.0
IAGC' AUTOMATIC GAIN CONTROL CURRENT (mAl
3.0
7.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
IAGC.AUTOMATIC GAIN CONTROL CURRENT (mAl
10
COMMON-BASE V PARAMETERS
V CB = 10 Vdc. T A
= 25°C
- f " ' " 100 MHz - - - f = 200 MHz
FIGURE 4 - REVERSE TRANSFER ADMITTANCE
FIGURE 3 - INPUT ADMITTANCE
... 100
I
~
~
~
«
...
.k?. .
80
60
40
~
20
----=:..
:::>
:l;
;;; -20
~
At·
~L
~ -60
.......
o
1.0
2.0
0.5
~
.§.
--- -- -............
~
0.4
~;;;
0.3
o
~
...
..........
:IE
8: -80
~-100
-g
........
7
«
""
-40
v-
- --7
w
'"
"-
,..- --
;,:::.
~
-Q~/
0.2
- - -- -
...~
w
ffi
0.1
~
5.0
3.0
4.0
6.0
7.0
IC' COLLECTOR CURRENT (mAl
8.0
9.0
o
10
o
1.0
.§
w
"«z
...
!::
:IE
0
«
80
J
,.,
60
40
20
ffi
bib.....
,.,' V
,.:,V
V ....
/""
....
...'"
0
-40
'" -60
«
~
~ -80
1.0
2.0
]
bib
,~
~
.::::-- r-1=:.::..
"' ' "f'.--- "-
-
3.0
4.0
5.0
6.0
7.0
IC' COLLECTOR CURRENT (mAl
rb-
-
-~rb
8.0
10
9.0
2.0
i--.
+--
~
z
« -20
--
FIGURE 6 - OUTPUT ADMITTANCE
FIGURE 5 - FORWARD TRANSFER ADMITTANCE
1 TOO
2.0
- -- ~/ :7 ,..-
-
-
-r--
..:bl!!..,
Rib
L". ......
V
/'
I-
V-
I-
Qlb
~
1.4
~
1.2
;;;
o
1.0
8.0
9.0
10
1.8
!
0.6
-
....-
-
r-. ....
.
~
bob
-
I--
.I
0.4
- -r.:lb_
0.2
Lo
2.0
.........
1--
.....
~
....... V
........ ~b
3.0
4.0
5.0
6.0
7.0
IC' COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-278
bl
~_Ob_
8.0
9.0
10
MPSH07
FIGURE 8 - CUR RENT -GAIN BANDWIDTH PRODUCT
FIGURE 7 - COLLECTOR-BASE TIME CONSTANT
~
10
!....
9.0
~
7.0
TA~250C I
VCS = 10 Vdc
z
~ 8.0
;::
w
~..
o
~ 3.0
2.0
ti
1.0
"e
0
r--.....
c..>
•
-
600
'" 500
~ 400
Z
/
~
ffi
/
...........
-
=10Vdc_ -
i
/
4.0
VCE
:c
b
/
5.0
TAl =250CI
800
iE 700
/
6.0
_
o
i5
o
/
c..>
~
1000
~ 900
t;
,;.
./
or:
V
~
........
300
..........
200
~
~ 100
c..>
a
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
.i-
00
u
IC' COLLECTOR CURRENT (mA)
u
~
u
~
~
U
~
~
IC' COLLECTOR CURRENT (mA)
FIGURE 9 - 100-MHz AND 200·MHz COMMON·BASE AMPLI FIER
O.II'FJ
JOHANSON
TRIMMER
RFC
lOI'H
1000 pF
INPUT~
0-8.0 pF
1000 pF
L1
1.0 k
FREQUENCY
100 MHz - LI- 11 TURNS NO. 16 AWG.14" 1.0 .•
TAPPED TURNS FROM COLD END.
200 MHz - L2 - 6 TURNS NO. 16 AWG,14" 1.0.,
TAPPED TURNS FROM COLD END.
*
*
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-279
~OUTPUT
W
•
MPSH10
MPSHII
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
350
2.8
mW
mWf'C
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
1.0
8.0
Watt
mWf'C
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
3 Collector
.:()
2 Emitter
3
VHF/UHF TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal.Resistance. Junction to Case
Characteristic
ReJC
125
°CiW
Thermal Resistance, Junction to Ambient
ReJA
357
°CiW
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC ~ 1.0 mAde, IB ~ 0)
V(BR)CEO
25
-
Vdc
Collector-Base Breakdown Voltage
(lc ~ 100 ILAdc, IE ~ 0)
V(BR)CBO
30
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 10 !-lAde, IC ~ 0)
V(BR)EBO
3.0
-
Vdc
Collector Cutoff Current
(VCB ~ 25 Vdc, IE ~ 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VBE ~ 2.0 Vdc, IC ~ 0)
lEBO
-
100
nAdc
hFE
60
-
VCE(sat)
-
0.5
Vdc
VBE
-
0.95
Vdc
650
-
MHz
-
0.7
pF
Characteristic
Max
Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(lC ~ 4.0 mAde, VCE
~
-
10 Vdc)
Collector-Emitter Saturation Voltage
(lC ~ 4.0 mAde, IB ~ 0.4 mAde)
Base-Emitter On Voltage
(lC ~ 4.0 mAde, VCE ~ 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 4.0 mAde, VCE ~ 10 Vdc, f
Collector-Base Capacitance
(VCB ~ 10 Vdc, IE ~ 0, f
~
tr
100 MHz)
Ccb
~
1.0 MHz)
Common-Base Feedback Capacitance
(VCB ~ 10 Vdc, IE ~ 0, f ~ 1.0 MHz)
Collector Base Time Constant
(lC ~ 4.0 mAde, VCB ~ 10 Vdc, f
0.35
0.6
rb'C c
~
pF
Crb
MPS-H10
MPS-H11
31.8 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-280
-
0.65
0.9
9.0
ps
MPSH10, MPSH11
COMMON-BASE Y PARAMETERS versus FREOUENCY
(VCB = 10 Vde, IC = 4.0 mAde, T A = 25°C)
•
Yib, INPUT ADMITTANCE
FIGURE 1 - RECTANGULAR FORM
FIGURE 2 - POLAR FORM
BO
~
1:
.sw
..,z
50
I-
40
~
30
'-'
....
..,~
~
.6
------ '"
70
60
-10
9ib
~
-20
~r' r--
-bib
~
r---...
r--... r--r-,
I"'
i'r-...
20
E
.s
a
10
100
200
300
400
t. FREQUENCY (MHz)
500
.........
~
" I'-
>=
r-IOOO MHz
-30
.............
-50
-60
1000
700
--
100
""'"
-40
30
20
10
400
200-100
J.
t---
1
40
50
60
BO
70
9ib (mmhos)
COMMON-BASE Y PARAMETERS versus FREOUENCY
(VCB = 10 Vde, IC = 4.0 mAde, T A = 25°C)
Yfb. FORWARD TRANSFER ADMITTANCE
FIGURE 3 - RECTANGULAR FORM
~
70
E
60
'-'
50
lI-
40
.sw
«
'"
~
30
'"
20
'"z
....~
«
'"
10
«
w
~
-
r--I"-..
I
-I- r--...
-9tb
50
...... 1"-..
I""
'"
l'..
f',
--i'--
lJ.5
400
100
~
600"'-...
700~
~ 40
E
t\
.s
;[ 30
"'" "-
0
~
FIGURE 4 - POLAR FORM
60
btb
-10
100
200
300
400
t. FREQUENCY (MHz)
500
20
"'
~ -20
~ -30
1000 MHz
1'\
700
10
70
1000
60
50
40
30
20
10
-10
-20
-30
1.2
1.6
2.0
9tb (mmhos)
Yrb. REVERSE TRANSFER ADMITTANCE
FIGURE 5 - RECTANGULAR FORM
FIGURE 6 - POLAR FORM
~ 5.0
1/
E
.sw
..,z
....
'-'
....
;;;
..,"
3.0
-b/
'"
w
/v
~
'"
z
~
-
2.0
1-.
w
'"w
'"
~
~
----==
1.0
0
100
Jps.J?V+-
4.0
r100
V
~I 200
./
V
y
---::brb
r--
-grb
700
200
~ -2.0
400
E
....- ~MPsTO r-I--
400
500
300
t, FREQUENCY (MHz)
-1.0
.s
4. -3.0
700
-4.0
1000 MHz
-5.0
1000
-2.0
-1.6
-1.2
-O.B
-0.4
Qrb (mmhosl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-281
0.4
0.8
MPSH10, MPSH11
Yob. OUTPUT ADMITTANCE
•
FIGURE 7 - RECTANGULAR FORM
FIGURE 8 - POLAR FORM
10
]
E
B.O
"'z
7.0
.§
'-'
..:
>>-
;;;
0
..:
>:::>
I!:
:::>
6.0
bob
3.0
V
0
~
2.0
1.0
]' 6.0
E
5.0
4.0
e 4.0
~
V
700
+i
200
100
~ I-200
I
2.0
,/
~
100
.§
V
1000 MHz
8.0
V
/
II
10
v
V
9.0
300
400
500
700
1000
2.0
f, FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-282
4.0
6.0
gob (mmhosl
8.0
10
MPSH17
•
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Po
625
5.0
mW
mWrC
TJ, Tstg
-55to +150
'c
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Operating and Storage Junction
Temperature Range
CATV TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
15
-
-
Vdc
Collector-Base Breakdown Voltage
(lc = 100 "Adc, IE = 0)
V(BR)CBO
20
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 "Adc, IC = 0)
V(BR)EBO
3.0
-
Vdc
ICBO
-
-
100
nAdc
hFE
25
-
250
-
VCE(sat)
-
-
0.5
Vdc
t,-
800
-
-
MHz
Ccb
0.3
-
0.9
pF
hfe
30
-
-
-
NF
-
-
6.0
dB
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
=
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vdc, f
=
100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Small-Signal Current Gain
(lC = 5.0 mAde, VCE = 10 Vdc, f
Noise Figure
(lc = 5.0 mAde, VCC
=
1.0 kHz)
=
12 Vdc, RS
=
50 ohms, f
=
200 MHz)
=
12 Vdc, RS
=
50 ohms, f
=
200 MHz)
FUNCTIONAL TEST
Amplifier Power Gain
(lC = 5.0 mAde, VCC
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-283
•
MPSH20
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4_0
Vdc
IC
100
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2_81
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mWrC
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
3 Collector
"~iQ
°c
2 Emitter
VHF TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RruC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RruA
357
°CIW
ELECTRICAL CHARACTERISTICS (TA
=
NPN SILICON
25°C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
30
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
40
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
4.0
-
-
Vdc
ICBO
-
-
50
nAdc
tr
400
620
-
MHz
Ccb
-
0.5
0.65
pF
rb'C c
-
10
-
ps
18
23
-
dB
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lc = 4.0 mAde, VCE
= 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(Ie = 4.0 mAde, VCE = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=:
1.0 MHz)
Collector Base Time Constant
(IE = 4.0 mAde, VCB = 10 Vdc, f = 31.8 MHz)
-
Conversion Gain (213 to 45 MHz)
(Ie = 4.0 mAde, VCE = 10 Vdc, Oscillator
Injection = 200 mVdc)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-284
MPSH20
CONVERSION GAIN CHARACTERISTICS
(TEST CIRCUIT FIGURE 9)
I
40
~
35
;;:
30
0
25
z
co
z
40
VC~ = 10 V~C
Oscillator Injection = 200 mV
fose = 258 MHz
f~g = 213 MHz
flF =45 MHz
45
I
.
B
z
;;:
-
",...
co
vL
35 r - 'lCIE = 10
IC = 4.0 mAde
30 r - fsig = 213 MHz
flF =45 MHz
25
z
0
20
>
z
15
~
~
>
20
8
15
8
~ 10
co
z
•
FIGURE 2 - VARIATION WITH INJECTION LEVEL
FIGURE 1 - VARIATION WITH COLLECTOR CURRENT
50
,/'
V
~ 10
co
--
~
5.0
5.0
o
o
1.0
2.0
3.0
4.0
o
o
5.0
100
IC. COLLECTOR CURRENT (mAde)
200
300
400
Vi. OSCILLATION INJECTION (mV)
COMMON-EMITTER y PARAMETERS
(lC = 4.0 mAde, VCE = 10 Vde, TA = 25°C)
FIGURE 3 -INPUT ADMITTANCE
FIGURE 4 - REVERSE TRANSFER ADMITTANCE
28
~
I
/
~
z
I::
iii
0
L
z
~
..'"
~
~ 8.0
./
~ 4.0
.......
~
_b i•
./
,.....
12
1/
~ 0.8
/'
16
-bra
,g
gi.- ' -
V
w
<.)
.'
1.0
~
/
24
,g 20
..
.
....
Ii
-
I-
/
0.6
./
w
~
/'
~ 0.4
/'
'"
....
V
~
ffi
-
0.2
~
'"
t
o
40
60
80
100
150
200
300
0
40
400
/
./
........
"ire
60
80
100
lOO
200
400
f. FREQUENCY (MHz)
f. FREQUENCY (MHz)
COMMON-EMITTER y PARAMETERS
(lC = 4.0 mAde, VCE = 10 Vde, TA = 25°C)
FIGURE 5 - FORWARD TRANSFER ADMITTANCE
~ 140
I
~
,g 12 0
w
z
g\.
..........
100
...........
'"~
..
60
~
0
~
20
~
a
~
V
.......
iii
~ 80
1Il
'"
....
boo
I
r-..
<.)
~
FIGURE 6 - OUTPUT ADMITTANCE
2.0
....-
V
........
I'.
" "- "
-
-bf. -
/
/
./
l,.....~
I'\.
40
60
80
100
200
V
~
300
/
/
400
~
o
40
60
80
100
gD~
---
f. FREQUENCY (MHz)
f. FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-285
200
lOO
400
MPSH20
FIGURE 8 - CAPACITANCES
FIGURE 7 - CURRENT-GAIN-BANDWIDTH PRODUCT
~ 800
•
3.0
TA=250C
~
t
5
700
1=
o
600
o
...a:
i:
o
:i
"i'z
500
;;:
'"a:i
:;;""
TA = 25°C
2.0
~VCE=lOVde
--I.-
V
l..---"
~
.....
r-- t--
-
~
0.5
400
Cob
ICeb
I-r-.
:::>
'-'
J:'
0.3
300
1.0
2.0
5.0
3.0
7.0
10
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
VR. REVERSE VOLTAGE (VOLTS)
IC. COLLECTOR CURRENT (mAde)
FIGURE 9 - MIXER TEST CIRCUIT
1.5-15 pF
lsig = 213 MHz
.....>-----.
RS = 50 OHMS >-T'-.---'--4l-~
T2
losc=258 MHz
OSCILLATOR INJECTION
RS = 50 OHMS
-
L2
flF = 45 MHz
YRL=500HMS
5.6"H
2.0
pF
':'
1.0 k
+10 Vde
Ll = 3 TURNS #18 ENAMELEO WIRE.
1/4"1.0.• AIR WOUND. WINDING LENGTH 1/2";
BASE TAPPED 1 TURN FROM GROUNO.
L2 = 10 TURNS '26INSULATEO WIRE. WOUNO
ON 1/4"I.D. COIL FORM. ARNOLO PART
NO. Al-l0 IRON POWDER CORE.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-286
MPSH24
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAde
PD
350
2.B
mW
mWfC
-55to +135
°c
Collector Current -
•
CASE 29-04. STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
11 ~()"~'
2
2 Emitter
3
VHF TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise
noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
30
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 !-lAde, IE = 0)
V(BR)CBO
40
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !-lAde, IC = 0)
V(BR)EBO
4.0
-
-
Vdc
-
-
50
nAdc
400
620
-
MHz
-
0.25
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC = B.O mAde, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = B.O mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
Conversion Gain
(213 MHz to 45 MHz)
(lC = 8.0 mAde, VCC
(60 MHz to 45 MHz)
(lC = 8.0 mAde, VCC
=
fT
=
100 MHz)
Ccb
0.36
pF
1.0 MHz)
-
dB
= 20 Vdc, Oscillator Injection =
150 mVrms)
19
24
=
150 mVrms)
24
29
20 Vdc, Oscillator Injection
=
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-287
-
MPSH24
•
CONVERSION GAIN CHARACTERISTICS
(TEST CIRCUIT FIGURE 7)
(VCC ~ 20 Vdc, RS ~ R L ~ 50 Ohms, fif ~ 44 MHz, B.w. ~ 6.0 MHz)
FIGURE 2 - CONVERSION GAIN versus INJECTION LEVEL
FIGURE 1 - CONVERSION GAIN versus COLLECTOR CURRENT
40
40
I
'"
II
fslg '" 60 MHz, fose
30
z
;;:
'"z
"inffi
20
l'
>
z
f5lg '" 60 MHz, fose '" 104 MHz
10 MHz
=
k
30
'"
-----~
~
~
~
z
;;:
I-"
'"z
Isig = 213 MHz. lose = 275 MHz _
I
~
8
10
2.0
6.0
4.0
ISig = 213 MHz, fose = 275 MHz_
/
10
~
Osc Inj = 150 mVrms
'"
./
20
"
~
>
z
8
...... ~
IC = 8,0 mAde
'"
8.0
10
12
14
300
200
100
16
IC. COLLECTOR CURRENT (mAde I
400
Vi. OSCILLATOR INJECTION (mVI
COMMON-EMITTER y PARAMETERS
(VCE ~ 15 Vdc, T A ~ 25°C)
FIGURE 3 - INPUT AOMITTANCE
FIGURE 4 - REVERSE TRANSFER ADMITTANCE
01r---.-~r--'---,---.---r---,---.---.--,
50
~ 40
E
.§
w
'-'
z
,.
""
30
L/
20
/
f-
it
~
~
>=
10
.-
-
.......
ff-
"""
~
---213MHz
- - 60MHz
-
0,06
9re < -0 01 mmho
~
~
~ 0.04
~
fB
--
~
I---+---+---+---+---+---+---+--+---f-----I
'"
w
glv
0.02
~
i•
~~
2,0
;::f~
,;::; .........-:
/
~ 008r---+---+---+---+---_~br-.--+---1---1---~--~
gie
-
~
V
/
I
06
w
'-'
./
I.
/9f.
40
r----..
~
FIGURE 6 - OUTPUT ADMITTANCE
0,8
"
02
/'
/bf'
4.0
6,0
8,0
10
12
14
16
18
20
IC, COLLECTOR CURRENT (mAdel
2,0
/
4.0
8,0
boe
10
12
14
IC, COLLECTOR CURRENT (mAdel
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-288
J
,/
....-6.0
/
16
18
20
MPSH24
FIGURE 7 - VHF MIXER TEST CIRCUIT
Ifif
!SI
fose
CI
C2
C3
C4
C5
LI
L2
60 MHz
213 MHz
JUS MHz
258 MHz
1.5·20 pF
1.5·20 pF
8.0·60 pF
60·12 pF
8.0·60 pF
1.5·20 pF
3.0·35 pF
1.5·20 pF
5 Turns #26
3 Turns #)6
Air, Tap 1 Turn Air, Tap Y2Turn
10 Turns #26 10 Turns #26
Air
Arnold Al-10
= 44 MHz, B.W. = 6.0 MHz)
C2
10k
Core
L3
Ohmite Z235
~470 pF
-
-VEE
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-289
•
•
MPSH30
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12.0
Watt
mWrC
TJ. Tstg
-55to +150
°c
Symbol
Max
Unit
ROJC
83.3
°C/W
ROJA(I)
200
°C/W
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
3 Collector
.~()
2 Emitter
IF AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
=
NPNSILICON
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
20
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
20
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
3.0
-
Vdc
-
50
nAdc
hFE
20
200
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAde)
VCE(sat)
0.1
3.0
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.96
Vde
300
800
MHz
Ceb
-
0.65
pF
NF
-
6.0
dB
Gpe
22.5
31
dB
VAGC
4.4
5.4
Vdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC = 4.0 mAde, VCE
=
5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
Noise Figure
(VAGC = 2.75 Vde, RS
=
=
tr
100 MHz)
1.0 MHz, emitter guarded)
= 50 ohms, f = 45 MHz)
FUNCTIONAL TESTS
Power Gain
(VAGC = 2.75 Vdc, RS
= 50 ohms, f = 45 MHz)
Forward AGC Voltage
(Gain Reduction = 30 dB, RS
=
50 ohms, f
= 45 MHz)
(1) ROJA is measured with the device soldered into a typical printed circuit board.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-290
MPSH32
•
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
I
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Po
625
5.0
mW
mWrC
Rating
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Operating and Storage Junction
Temperature Range
-55 to
TJ, Tstg
+ 135
3 Collector
1~
,
Bas~
1··
2
·C
2 Emitter
3
VHF TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
·CfW
Thermal Resistance, Junction to Ambient
R8JA
200
·CfW
Characteristic
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
V(BRICEO
30
-
V(BR)CBO
40
-
V(BR)EBO
4.0
ICBO
-
Max
Unit
-
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB
=
(lC
(lC
=
=
(IE
=
100 !LAde, IC
10 Vdc, IE
= 0)
= 0)
1.0 mAde, IB
100 !LAde, IE
= 0)
= 0)
-
50
Vdc
Vdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(lc
= 4.0
= 5.0 Vdc)
= 10 mAde, IB = 5.0 mAde)
= 10 mAde, IB = 5.0 mAde)
mAde, VCE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC
(lC
27
35
200
-
VCE(sat)
-
1.5
3.0
Vdc
VBE(sat)
-
0.9
1.2
Vdc
fy
300
440
-
MHz
Ccb
-
0.2
0.22
pF
NF
-
3.3
-
dB
25
-
dB
-
5.5
-
Vdc
hFE
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
Noise Figure
=
=
100 MHz)
1.0 MHz) (Emitter Guarded)
(lE=4.0 mAde, VCE=9.3 Vdc, VAGC
RS = 50 Ohms, f = 45 MHz)
= 2.75 Vdc,
FUNCTIONAL TEST
Amplifier Power Gain
(lE=4.0 mAde, VCE=9.3 Vdc, VAGC
RS = 50 Ohms, f = 45 MHz)
Gpe
=
22.5
2.75 Vdc,
Forward AGC Voltage
(Gain Reduction = 30 dB, RS
VAGC
= 50 Ohms, f = 45 MHz)
SUMMARY-COMMON EMITTER PARAMETERS (VCE = 10 Vdc, IC = 4.0 mAde, f = 45 MHz)
Input Conductance
gie
-
6.0
Input Capacitance
Cieo
-
33
Forward Transfer Admittance Magnitude
IYfel
Forward Transfer Admittance Phase Angle
Feedback Capacitance
Output Conductance
pF
co
-5.0
-10
1/
I
/
I
:0
~ 5.0
~
co
I
7.0
1.0
2.0
3.0
4.0
5.0
VAGC. AUTOMATIC GAIN CONTROL VOLTAGE (VOLTS)
V
V V
1"'-
1/
2.0
1.0
"
1.0
6.0
3.0
4.0
2.0
5.0
VAGC. AUTOMATIC GAIN CONTROL (VOLTS)
6.0
COMMON-EMITTER y PARAMETERS
VeE = 10 Vdc, f = 45 MHz, TA = 25 0 e
FIGURE 3 -INPUT ADMITTANCE
FIGURE 4 - REVERSE TRANSFER ADMITTANCE
B
E
60
B
E
~
~;;:
"'"~
/
50
40
/
30
/
20
;;!;
!
10
:::;::::. r:::::--
160
~
14 0
~
120
~
100
~
80
---::: V
;;1
~
0.1
~
~
:s
~
!--
V
91.
V
;li 60
I-
!
'"
"'"
~
z
~
10
0
12
~
o
2.0
40
0
0
V
/
/
/
'\
\
---l..
1./-"',
/
8.0
4.0
6.0
Ic. COLLECTOR CURRENT (mAde)
,
./
2.0
4.0
6.0
8.0
...........
S
0.5
~
0.4
~
~iii 0.3
"'" 0.2
I-
r--
~
/
I-
5
r--
10
10
12
FIGURE 6 - OUTPUT ADMITTANCE
1
t--...
v
I-
gre
0.6
z
i~
L.2
FIGURE 5 - FORWARD TRANSFER ADMITTANCE
i
o
'"
,g
"'u
I7g;.
~
6.0
4.0
8.0
IC. COLLECTOR CURRENT (mAde)
2.0
/
0.3
~ 0.1
o
o
12
IC. COLLECTOR CURRENT (mAde)
VJ
jI:..
/
~
2.0
4.0
6.0
B.O
IC. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-292
v_
10
12
MPSH32
FIGURE 8 - COLLECTOR·BASE CAPACITANCE
FIGURE 7 - DC CURRENT GAIN
1.0
60
40
f-
~
JCE .' 10 ~d~
•
Ceb-Cre@IE-O
0.7
~ 0.5
30
f-
U
I\.
~
\
0.3
r-
w
~
~
10
6.0
8~
0.1
4.0
j
0.01
B.O
3.0
0.2
--I-
0.2
0.05
0.5
0.3
1.0
1.0 3.0
5.0
IC. COLLECTOR CURRENT (mAde!
10
10
0.3
0.5
0.7 1.0
1.0 3.0
5.0 7.0 10
VCB. CO LLECTOR·BASE VOLTAGE (VOLTS!
-
20
30
FIGURE 9 - CURRENT -GAIN-BANDWIDTH PRODUCT
-
~ 500
~
t;
VCE
::>
~ 300
=10 Vdc
........
:;'"
~ 200
"'-
""
I"\.
;i\
I"\.
I
Z
;!i
100
'~"
_
70
13
.!:'
50
1.0
2.0
3.0
IC. COLLECTOR CURRENT (mAde!
5.0
FIGURE 10 - 45 MHz FUNCTIONAL TEST CIRCUIT
IUNNEUTRALIZED!
Vee= 12V
VAGC
RFBEADS
"0
1/2W
l000PFI~
50 OHMS
OUTPUT
'"
112W
50 OHMS
INPUT
40-30pF
11 '" TOROID 4 1 RATIO
ST·PRt 2T·SEC
t
f 122WtRE
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-293
7.0
"" "
10
•
MPSH34
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
45
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAde
Po
350
2.8
mW
mWf'C
TJ, Tstg
-55 to +135
°c
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
11 ,-()'-'
2
2 Emitter
3
IF TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Refer to MPSH24 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
45
-
Collector-Base Breakdown Voltage
(lC = 100 /lAde, IE = 0)
V(BR)CBO
45
-
-
Emitter-Base Breakdown Voltage
(IE = 10/lAdc, IC = 0)
V(BR)EBO
4.0
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Vdc
Vdc
-
Vdc
-
-
50
nAdc
40
15
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 7.0 mAde, VCE = 15 Vde)
(lC = 20 mAde, VCE = 2.0 Vdc)
hFE
-
Collector-Emitter Saturation Voltage
(lc = 20 mAde, IB' = 2.0 mAde)
VCE(sat)
-
-
0.5
Vde
Base-Emitter On Voltage
(lc = 7.0 mAde, VCE = 15 Vdc)
VBE(on)
-
-
0.95
Vdc
fT
500
720
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 15 mAde, Vce = 15 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, Ie = 0, f
Ccb
= 1.0 MHz)
Current-Gain - Bandwidth Ratio
(lc = 15 mAde to IC = 20 mAde, VCE
=
fT15
15 Vdc)
-
fT20
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-294
0.25
-
0.32
1.6
MHz
pF
-
MPSH54
MPSH55
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Rating
IC
100
mAde
Total Device Dissipation @ TA
Derate above 25"C
=
25"C
Po
625
5.0
mW
mW/"C
Total Device Dissipation @ TC
= 25"C
Po
1.5
12
Watt
mW/"C
TJ, Tstg
-55to +150
"C
Collector Current -
Continuous
Derate above 25°C
Operating and Storage Junction
Temperature Range
•
CASE 29-04. STYLE 1
TO-92 (TO-226AA)
1/":~"-·'
2
1 Emitter
3
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
R8JC
83.3
"CIW
R8JA(l)
200
"CIW
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to Ambient
PNP SILICON
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
80
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 I!Adc, IE = 0)
V(BR)CBO
80
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 I!Adc, IC = 0)
V(BR)EBO
4.0
-
-
Vdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
-
-
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
-
-
50
nAdc
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(lC = 1.5 mAde, VCE
hFE
=
MPSH54
MPSH55
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
30
30
VCE(sat)
-
fT
80
-
120
150
0.25
Vdc
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.5 mAde, VCE = 10 Vdc, f
=
100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
hoe
-
NF
-
Ccb
Output Admittance
(lc = 1.5 mAde, VCE
=
10 Vdc, f
Noise Figure
(lC = 1.5 mAde, VCE
=
10 Vdc, RS
=
1.0 kHz)
=
50 ohms, f
=
1.0 MHz)
MPSH54
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-295
-
1.6
pF
-
15
J'mhos
-
2.0
dB
-
MHz
•
MPSH81
CASE 29·04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Po
350
2.81
mW
mWI"C
TJ, Tstg
-55to +150
°c
Rating
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Operating and Storage Junction
Temperature Range
RF AMPLIFIER TRANSISTOR
PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lc = 10 ,.,Adc, IE = 0)·
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 10 ,.,Adc, IC = 0)
V(BR)EBO
3.0
Characteristic
Typ
Max
Unit
-
-
Vdc
-
Vdc
-
Vdc
100
nAdc
100
nAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
-
Emitter Cutoff Current
(VBE = 2.0 Vde, IC = 0)
lEBO
-
-
hFE
60
-
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
=
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 5.0 mAde, IB = 0.5 mAde)
VCE(sat)
-
-
0.5
Vdc
Base-Emitter On Voltage
(lC = 5.0 mAde, VCE = 10 Vdc)
VBE(on)
-
-
0.9
Vdc
600
-
-
MHz
Ccb
-
-
0.85
pF
Cce
-
-
0.65
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
=
IT
100 MHz)
1.0 MHz)
Collector-Emitter Capacitance
(lB = 0, VCB = 10 Vdc, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-296
MPSH81
TYPICAL COMMON-BASE y-PARAMETERS
(VCB = 10 Vdc. T A = 25 0 C. Frequency POints in MHz)
FIGURE 1 - INPUT ADMITTANCE
-30
93~~;(_, ~MHz
-40
.~
l""'\ .~ ~
I
-50
1i
-10
I~
-3.0
'" N.."'"
~
~ -80
\ 100MHz
8.0 rnA
Q
1-
\
\
-100
-110
-20
40
20
~
60
80
4.0
12rn~
i-5.0
r-.... ~\
12~
I
-90
~
120
100
-2.1
-1 B
-1.5
~MHz
2
~
\
100
90
80
..........
~A--
\
\
~
I
r--
"
....,..
.......
I
IC = 4.0 mA
.........
I ..........
\
50
I
1i
B. 0
..§. 6. 0
l\.
~
n
J-J-4
4. 0
2. 0
~\
930
y~
12 rnA
J V/
Q
~
.........
~ ?/
E
450
..............
30
/
Ie = 4.0 rnA
"'),930
40
20
-120
-0.3
.I_~A ..... ---
10
I .......
\
60
-0.6
14
110
Q
-0.9
930
FIGURE 4 - OUTPUT ADMITTANCE
FIGURE 3 - FORWARD TRANSFER ADMITTANCE
"§ 70
..§.
-1.2
IC = 4.0 rnA
9rb. (mmhos)
9ib. (rnrnhos)
120
- - fJ
_-r""--
-8.0
-2.4
140
450
Vs.o mA
/ .V r-:'-
-7.0
250
It-t-/
./V
-6.0
\
-,'00MHz
~ ~,
-2.0
1250 MHz
-60
..§. -70
~
t:"'-.:::.
,,'C = 4.0 rnA
I
"§
•
FIGURE 2 - REVERSE TRANSFER ADMITTANCE
~,450
250
100 MHz
0
~
-100
-80
-60
-40
20
-20
-2. 0
-0.5
40
1.0
0.5
1.5
gob. (rnrnhos)
9fb. (rnrnhos)
FIGURE 5 - CURRENT·GAIN - BANDWIDTH PRODUCT
:t:
~
1000
t; 900
::>
c
800
0.
700
~
:t:
,.
600
z
900
/'
/
c
:i
I
z
<
'"ti
w
~
~
.t-
40
- -
V
I-
!O!
-
/
o
300
I
VC~: ~~OVMHZ-
I
200
1
-I
16
18
100
0
0
2.0
4.0
6.0
8.0
10
12
14
IC. COLLECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-297
20
2.0
2.5
3.0
3.5
•
MPSLOI
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
120
Vde
Collector-Base Voltage
VCBO
140
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
150
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
625
5.0
mW
mWrC
Total Device Dissipation@ TC
Derate above 25'C
= 25'C
Po
1.5
12
mWrC
-55to +150
'c
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
":~
Watts
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
R6JC
83.3
'CIW
Thermal Resistance, Junction to Ambient
R6JA
200
'CIW
NPN SILICON
Refer to 2N5550 lor graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
120
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
140
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
Collector Cutoff Current
(VCB = 75 Vde, IE = 0)
ICBO
-
1.0
pAde
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
-
100
nAde
hFE
50
300
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
-
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 10 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAdeHl)
VBE(sat)
-
Vde
0.20
0.30
Vde
-
-
1.2
1.4
'r
60
-
MHz
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Ceb
-
8.0
pF
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
hie
30
-
-
SMAll-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lC = 10 mAde, VCE = 10 Vde, 1= 100 MHz)
(1) Pulse Test: Pulse Width = 300 ps, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-298
MPSL51
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
4_0
Vdc
IC
600
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
625
5_0
mW
mWrC
Total Device Dissipation @ TC
Derate a bove 25°C
=
25°C
Po
1.5
12.0
Watts
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~.~
1 Emitter
°c
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RruA
200
°CIW
Refer to 2N5400 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
100
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
100
-
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
4.0
-
Characteristic
Max
Unit
OFF CHARACTERISllCS
Vdc
Vdc
Vde
Collector Cutoff Current
(YCB = 50 Vde, IE = 0)
ICBO
-
1.0
!lAde
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
100
nAdc
hFE
40
250
-
ON CHARACTERISTICS(1)
DC Current Gain(1)
(lC = 50 mAde, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
Vde
0.25
0.30
Vde
-
1.2
1.2
60
-
MHz
-
8.0
pF
20
-
-
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
hfe
(1) Pulse Test: Pulse Test = 300 p.s, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-299
•
MAXIMUM RATINGS
Symbol
Rating
•
Collector-Emitter Voltage
MPSWOl
MPSW01A
Vdc
Vdc
VCBO
MPSWOl
MPSW01A
40
50
Emitter-Base Voltage
Continuous
VEBO
5.0
Vdc
IC
1000
mAde
Total Device Dissipation @ TA
Derate above 25·C
=
25·C
Po
1.0
8.0
Watt
mWFC
Total Device Dissipation @ TC
Derate above 25·C
=
25·C
Po
2.5
20
Watts
mWFC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
Symbol
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
~~
·C
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
MPSWOl
MPSW01A
Unit
30
40
Collector-Base Voltage
Collector Current -
Value
VCEO
Max
Unit
Thermal Resistance, Junction to Case
RruC
50
·CIW
Thermal Resistance, Junction to Ambient
RruA
125
·CIW
HIGH CURRENT TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
30
40
-
40
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 IlAde, IE = 0)
V(BR)CEO
MPSWOl
MPSW01A
Vdc
V(BR)CBO
MPSWOl
MPSW01A
Emitter-Base Breakdown Voltage
(IE = 100 IlAdc, IC = 0)
50
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
ICBO
MPSWOl
MPSW01A
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
Vde
5.0
-
Vdc
IlAde
-
-
0.1
0.1
-
0.1
55
60
50
-
IlAdc
ON CHARACTERISTICS(1)
-
DC Current Gain
(lC = 10 mAde, VCE = 1.0Vdc)
(lC = 100 mAde, VCE = 1.0 Vdc)
(lC = 1000 mAde, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 1000 mAde, IB = 100 mAde)
VCE(sat)
-
0.5
Vdc
Base-Emitter On Voltage
(lC = 1000 mAde, VCE = 1.0 Vdc)
VBE(on)
-
1.2
Vdc
tr
50
-
MHz
Cobo
-
20
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width", 300 1-'5, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-300
MPSW01, MPSW01A
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
10
30 0
200
1\
r- r--...
.""
~ 06
"
"
r-
c-
r-
30
10
0
"
".
~ 02
I I
N.I
I-
o
500
50
100
200
IC. COLLECTOR CURRENT (mAl
1000
0.01 0.02
TJ = 25°C
11111 I II
11111
~
~ 0.6
F
to
~>
:>
0.2
VICNI~ATI
11111
o
10 2.0
5.0
10
t
"
"'4
".
"1-
.....
t-I..
0.05 0.1 0.2
0.5 I 0 2.0
5.0 10
la. BASE CURRENT (mAl
20
50 100
1/
~ -16
c
eVB lor VBE
.
u
I
04
"b
0
!iiu
I
w
'""-a
~
.e. -12
~~J\161~
I'"
rl+
".
';j,
>
U+tt:ml-
11111
u;
0
-08
VaE(SATi @ Ic/la = 10
08
o
FIGURE 4 - TEMPERATURE COEFFICIENT
FIGURE 3 - ON VOLTAGES
1.0
~
'"" " '"" "
".
~,
w
VCE=IOV
TJ = 25°C
20
f-
".
8
'""
t-
g-
C;
~
0
~'-
'"
~ 04
Oc-
•
1
to
"1\
0
II 1111
TJ = 25°C
~ -20
,
@ IC Iia
~
I II
IIIII
~
~ -24
~
ff;
'"
20
50 100 200 5001000
IC. COLLECTOR CURRENT (mAl
-28
I 0 2.0
5.0 10
20
50 100 200 500 1000
IC. COLLECTOR CURRENT (mAl
/
FIGURE 5 - CURRENT GAIN-BANDWIDTH PRODUCT
'N
'"
~
>g
Vi--"
~
z
100
/'
~
:2
Ci
70
~
50 f--
0
TJ = 25°C
i'....
r--.....
V0
=10V
TJ=25°C
1= 20 MHz
I-- f--- VCE
to
.
"-.........
I---I -
200
~
§c
FIGURE 6 - CAPACITANCE
0
300
r-
r- t---
I\",
o
'"
u
.t:- 30
10
Cobo
0
20
C1bo l - -
50
100
200
IC. COLLECTOR CURRENT (mAl
1000
50
10
10
15
20
30
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-301
20
40
25
50
MPSW01, MPSW01 A
FIGURE 7 - ACTIVE REGION-SAFE OPERATING AREA
•
lK
500
;;c
lOs
g
i
200
r-r- TA = 250
aa: 100
o
frl
8
50
E
20
:::j
1001"
"\.
..:(C = 25°
.....
Il'h
Duty Cyolo" 1D%
1.0 ms
.... ""l\.
~·.Currenllimil
::=::= f=
Thermal limit
...="
-= rteconr BrrkiolnJ'T.l
10
1.0
II I
2.0
MPSW01Mfswr A
5.0
10
20 30 40
VCE. COLLECTOR-EMITIER VOLTAGE IVI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-302
MPSWOS
MPSW06
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol MPSW05 MPSW06
Unit
VCEO
60
80
Vde
VCBO
60
80
Vde
VEBO
4.0
Vde
IC
500
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
1.0
8.0
mWrC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
2.5
20
mWrC
-55 to +150
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
•
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
Watt
~~
Watts
, Emitter
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
Thermal Resistance, Junction to Case
R8JC
50
'CIW
Thermal Resistance, Junction to Ambient
R8JA
125
'CIW
AMPLIFIER TRANSISTOR
NPNSILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISncS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde,lB = 0)
V(BR)CEO
MPSW05
MPSW06
Emitter-Base Breakdown Voltage
(IE = 100 !£Ade, IC = 0)
Collector Cutoff Current
(VCE = 40 Vde, IB = 0)
(VCE = 60 Vde, IB = 0)
MPSW05
MPSW06
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
MPSW05
MPSW06
60
80
V(BR)EBO
4.0
ICEO
-
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
-
Vde
Vde
!£Ade
0.5
0.5
!£Ade
0.1
0.1
0.1
!£Adc
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 50 mAde, VCE = 1.0 Vdc)
(IC = 250 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc = 250 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 250 mAde, VCE = 5.0 Vde)
VBE(sat)
-
fr
Cobo
80
60
-
-
0.40
Vde
1.2
Vdc
50
-
MHz
-
12
pF
SMALL-SIGNAL CHARACTERISllCS
Current-Gain - Bandwidth Product
(lC = 200 mAde, VCE = 5.0 Vde, f
= 20 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
(1) Pulse Test: Pulse W,dth", 300 11", Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-303
MPSW05, MPSW06
•
D.C. CURRENT GAIN
FIGURE 1 400
TJ
f.--
z
~
200
>-
I-
~
f.---
100
-
80
60
40
05
125 0 C
-
r-
f..---
~
-55 0 C
r-
-
r--
I--"
-1--1-
25°C
~=>
u
u
c
1
_f..---
u;
':;
c
~
08
w
'"':;
""c
I - "':'-1-
>
'"
~
~
'"c
~
07
10
III~I! 110 rnA
U
.....
20
30
50
70
10
20
30
IC. COLLECTOR CURRENT (mAl
50
Ul li
rnA
2;0
~1
II_
u;
':;
c
06
~
w
'"""':;
-
04
0
>
>'
..
\
02
0
005
0.1
--
I-
I'---.
r--I-
0.2
0.5
10
2.0
5.0
10
20
10
50
Sw
~
....
50
10
10
50
IC. COLLECTOR CURRENT (mAl
100
500
60
-1 2
40
~
~
-1.6
w
0VB for VSE
-2.0
-2.4
---
Gibe
u
.,/
z
-
20
l-
U
;t
I
TJ" 25 0C
I"---
;3
10
U
80
I-
60
Cabo
.;
~
200
80
G
i§
10
FIGURE 5 - CAPACITANCE
·0.8
u
500
I
FIGURE 4 - BASE-EMITTER
TEMPERATURE COEFFICIENT
~
300
200
500 mA-
lB. BASE CURRENT (mAl
3;
,g
100
FIGURE 3 - ON VOLTAGES
---
c
>
till
II~J~A-
5~
70
I
T/' 2510 C
~.-
u
~
~
"""~ ~
-......
f..--- r-
"l::
lit UJ
06
I
VCE '1.0 V
~
FIGURE 2 - COLLECTOR SATURATION REGION
10
-
-2.8
0.5
1.0
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (mAl
100
200
40
0.1
500
N0.2
05
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-304
20
50
. 100
MPSW05, MPSW06
FIGURE 6 - CURRENT GAIN· BANDWIDTH PRODUCT
300
'"
~
i'"
~
~z
,
'"
,<0
I
Z
;;'
'">-
~G
.f
200
100
-
vlE~U
TJ
=
25°C
\
V
z
!
500
~ 200
~ 100
Su 50 ===+==+~-:_
Current limit
50
30
50
70
10
10
30
50
70 100
20
10
10
30
2.0
13
>-
\
f-\
70
FIGURE 7 - ACTIVE REGION· SAFE OPERATING AREA
100
-
- 20
Thermaillmit
Second Breakdown Limit
.
50
10
_
~
0...0-_
-+--
MPSW06
20
VCE. COLLECTOR-EMITIER VOLTAGE (VOLTSI
IC. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-305
..........
=-~ ·MP~..;;J:;r-f ~:
,
~ •
.
60 80 100
•
MPSWIO
MAXIMUM RATINGS
I
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Collector-Base Voltage
VCBO
300
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
500
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
PD
1.0
8.0
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
2.5
20
Watts
mWrC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-03. STYLE 1
TO-92 (TO-226AE)
3 Collector
":~
1 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
50
°CIW
Thermal Resistance, Junction to Ambient
RruA
125
°CIW
Characteristic
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to MPSW42 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
300
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
300
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
V(BR)EBO
6.0
-
Vdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
-
0.2
!lAde
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
lEBO
-
0.1
!lAde
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 1.0 mAde, VCE
(lC = 10 mAde, VCE
(lC = 30 mAde, VCE
-
hFE
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
25
40
40
-
-
Collector-Emitter Saturation Voltage
(lC = 30 mAde, IB = 3.0 mAde)
VCE(sat)
-
0.75
Vdc
Base-Emitter On Voltage
(lc = 30 mAde, VCE = 10 Vdc)
VBE(on)
-
0.85
Vdc
t,-
45
-
Ccb
-
3.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width"" 300 p.s, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-306
MHz
pF
MPSW13
MPSW14
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
30
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
IC
1.0
Adc
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
PD
1.0
8.0
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
2.5
20
Watts
mWrC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RWC
50
°CIW
Thermal Resistance, Junction to Ambient
RWA
125
°CIW
Characteristic
•
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
DARLINGTON TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
V(BR)CES
30
-
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
'CBO
-
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
lEBO
-
100
nAdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 MAdc, VBE = 0)
ON CHARACTERISTlCS(1)
DC Current Gain
(lC = 10 mAdc, VCE
(Ie
=
100 mAde, VCE
hFE
=
5.0 Vdc)
=
5.0 Vdc)
MPSW13
MPSW14
5000
10,000
MPSW13
MPSW14
10,000
20,000
-
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAdc, 'B = 0.1 mAdc)
VCE(sat)
-
1.5
Vdc
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 5.0 Vdc)
VBE(on)
-
2.0
Vdc
SMALL·SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
(1) Pulse Test: Pulse Width", 300 p.8, Duty Cycle'" 2.0%.
(2) fr = Ihfel' ftest·
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-307
MPSW13, MPSW14
FIGURE 1 - ACTIVE REGION SAFE OPERATING AREA
•
3.0 k
«2.0 k
O~ Cycle ~ 10%-
limit
----Thermal limit
-~-Current
I
- -Second Breakdown limit
~
"-
!z
a
il'!
1~100p.s
'<:
1.Ok
~
~
...
,
~ 500
8
1.0 mS
"-".
, ...
E
1.0s~
""-=">
,
TC: 25°C :-;.
'.
TA: 25°C
200 ']
1.5 2.0
~
.........
...
....
10
-'i" 5.0
~
20
30
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 2 - DC CURRENT GAIN
FIGURE 3 - COLLECTOR-SATURATION REGION
200 k
;J: :25 0C
lOOk
10k
z
5Dk
~
30k
~
20k
~
"
j...-
30
-...,.......
I -~
11
II
:c l•
25°C t--
II
II
II
I
11111 II 111111
11111 11 WllJ
I ~~O
1~~A 5:~A
~~
II
Tj'" 250C
~ob ~ll
u
g
10k
~ 10k
50 k
r
VCE . 50 V
I-H'
30k
20 k
50
o
55°C
r-t-
II
70
10
o
u
20
10
3[)
5U
70
lOa
200
300
5
01
500
02
05
10
FIGURE 4 - ON VOLTAGES
16
IIII
TJ·250C
I'
~
0
12
?
'"
~>
,;
10
OB
I I
I I
~
l-+- f-I-
=FRt-IT
IIII
I I
I I
-----
06
50 70
I
10
20
30
50
70
100
"APPLIES FOR lelia" hFE/3 a
-:;:.,/
'Iive
20
50
100 200
500 1000
200
300
2lo~ ~~ 1250~
JJlb..-±:" r-
tor VeE(sat}
0
-r-
f-'"
k-'/
-550C to 25°C
0
lill 1
... v
25°C to 1250C
--
I--
VeE(sat) @leila " 1000
10
FIGURE 5 - TEMPERATURE COEFFICIENTS
VBE(onl@ VeE'" 5 a v
1111
50
·10
~BIE:~tl@ 1~!lB! 1000
I "I"il
20
lB. BASE CURRENT (pAl
Ie COLLECTOR CURRENT (mA)
0
r-1"yB foe VBE
0
o
500
50
Ie. COllECTOR CURRENT (rnA)
--
II II
70
10
..-f-
,
-55°C to 25°C
1111
20
30
50 70 100
lC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-308
..u.++-r
,.
I
200
300
500
MPSW13, MPSW14
FIGURE 6 -
HIGH FREQUENCY CURRENT GAIN
~
...z
20
veE =!i 0 V
I"" 100 MHl
lJ" 25°C
z
1\
w
~
u
-u
z
...«
10
08
06
~
« 04
w
70
~
50
u
ill
IIII
-
i"-
V
2.0
•
FIGURE 7 - CAPACITANCE
40
liJ'~ l5DC
e,bD
f.......~bD
3.0
;;
02
05
10
20
05
10
20
50
Ie. COLLECTOR CURRENT
100
200
20
004
500
01
02
04
10
20
40
VR. REVERSE VOLTAGE (VOLTS)
(rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-309
10
20
40
•
MPSW42
MPSW43
MAXIMUM RATINGS
Rating
Symbol
MPSW42 MPSW43
Unit
Collector-Emitter Voltage
VCEO
300
Collector-Base Voltage
VCBO
300
Emitter-Base Voltage
VEBO
6.0
Vde
IC
500
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
1.0
8.0
Watt
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
2.5
20
Watts
mWrC
TJ, Tstg
-55to +150
"C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
200
Vde
200
Vde
CASE 29·03, STYLE 1
TO·92 (TO·226AE)
3 Collector
":.~
1 Emitter
HIGH VOLTAGE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
R8JC
50
"CIW
Thermal Resistance, Junction to Ambient
R8JA
125
"CIW
ELECTRICAL CHARACTERISTICS (TA
NPNSILICON
= 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
300
200
-
300
200
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 pAdc, IE = 0)
Vdc
V(BR)CEO
MPSW42
MPSW43
Vde
V(BR)CBO
MPSW42
MPSW43
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vde, IE = 0)
MPSW42
MPSW43
Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)
(VEB = 4.0 Vde, IC = 0)
MPSW42
MPSW43
ICBO
lEBO
6.0
-
-
0.1
0.1
Vde
pAdc
pAde
-
0.1
0.1
25
40
40
40
.:-:-'"
-
0.5
0.5
VBE(sat)
-
0.9
Vde
tr
50
-
MHz
-
3.0
4.0
-
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
hFE
Both Types
Both Types
MPSW42
MPSW43
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
MPSW42
MPSW43
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
-
-
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 20 MHz)
Collector-Base Capacitance
(VCS = 20 Vde, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width .. 300
p,S,
Ceb
MPSW42
MPSW43
Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2·310
pF
MPSW42, MPSW43
FIGURE 1 - D.C. CURRENT GAIN
FIGURE 2 - COLLECTOR SATURATION REGION
100
-
:z. 100
~
>- 70
~
~
50
u
--
c
~
30
10
10
lL
--
-
-
_15~OC
~
\
~ 05
~
TJ - 25°C
:>
'" 04
~
I--
~
o
\ - Ie' 30 rnA
3
~
f.- V
30
50 70
10
10
50
30
70
~
o
100
01
0.5
02
IC. COLLECTOR CURRENT ImAI
FIGURE 3 - ON VOLTAGES
1.4
,."'c
~
n
V~Elsaltl @IIC~IS < 10
~ o. 6
"
,.
,.'
-
o
1.0
10
10
30
50
-15 10
Tj<250C
50
z
~ 10
7.0
=
Ceb
~
50
~ 30
-
2.0
0.1
0.5
1.0
1.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTS)
70
100
....... V
."
:.---
Tj < 150C
VCE < 10 V
f < 10 MHz
V
\
I
z
C,b
c,,;; 3.0
1.0
70
i:
c
t--
5 5.0
50
~
gt;
c>-
!::
I 30I
30
50 70 10
10
IC. COLLECTOR CURRENT ImAI
~ 100
~ 20
w
u
I
FIGURE 6 - CURRENT GAIN - BANDWIDTH PRODUCT
70
r-
10
~
-55°C to 125°C
-10
FIGURE 5 - CAPACITANCE
V
-sstc IO}5~ D
I'
II
10
~ -1 5 r-- ~evSlfor VBE
100
70
100
30
I I
t:r I
I
Reve for VeE("t)
-0 5
1-
5.0
... -: . "":: ..... rTl
II
30
50 7.0
10
10
IC. COLLECTOR CURRENT ImAI
1~OC "I 1150C IL
5 r---
'"
~
V~Elsa~1 @IIC)lsl<116
1
15
I I
I I
8
I I I I I II
I I II I
~ 04
~
~
;
I--
l-
VSElo"1 @VCE < 10 V
>-
k:l~
IS
0
I I I
I I I
o. 8
20 30
FIGURE 4 - TEMPERATURE COEFFICIENTS
Tr 2
0
10
10
20
5.0
lB. BASE CURRENT (mAl
5
I I I
1.1
I - 20 mA
X- 1".......
Ie - 10 rnA
1
'"
-'"
'"
o. 2
8
II 1
\
:::j
,J;;'
20
•
TJ'" 125°C
VCE < 10 V
~
50
100
>'-
10
1
~
B
J:'
100
10
1.0
2.0
3.0
5.0
7.0
10
20
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-311
30
50
70
100
MPSW42, MPSW43
FIGURE 7 - ACTIVE REGION SAFE OPERATING AREA
•
lk
500
4:
.§.
0;; 200
~
B 100
........
" 1.0 • ...,
'"
co
8
:::j
B
E
50
"
rTA = 25°C
20
~-++C=~5OC
10
10
Current limit
---- Thermal limit
- - Second Breakdown limit
16mt
"-
""
"
Duty Cycle'; 10%
~ ~1001's
'" '-""'"
-MPSW42
~ MPSW43
20
50
100
200 300
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-312
MPSW45
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCES
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
IC
1.0
Adc
1.0
B.O
Watt
mWrC
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
2.5
20
Watts
mWrC
TJ, Tstg
-55to +150
°c
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO·226AE)
THERMAL CHARACTERISTICS
DARLINGTON TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
RruC
50
°C/W
Thermal Resistance, Junction to Ambient
RruA
125
°C/W
NPN SILICON
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 100 pAdc, VBE = 0)
V(BR)CES
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
50
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
12
-
Vde
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VEB = 10 Vde, IC = 0)
lEBO
-
100
nAdc
25,000
15,000
4,000
150,000
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS(l)
-
DC Current Gain
(lC = 200 mAde, VCE = 5.0 Vde)
(lC = 500 mAde, VCE = 5.0 Vde)
(lC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 1.0 Ade, IB = 2.0 mAde)
VCE(sat)
-
1.5
Vde
Base-Emitter Saturation Voltage
(lc = 1.0 Adc, IB = 2.0 mAde)
VBE(sat)
-
2.0
Vde
Base-Emitter On Voltage
(lc = 1.0 Adc, VCE = 5.0 Vde)
VBE(on)
-
2.0
Vde
fT
100
-
MHz
Ceb
-
6.0
pF
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 200 mAde, VCE = 5.0 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width", 300 p.s, Duly Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-313
MAXIMUM RATINGS
Symbol
Rating
•
Collector-Emitter Voltage
MPSW51
MPSW51A
Vde
Vde
VCBO
MPSW51
MPSW51A
40
50
Emitter-Base Voltage
Continuous
VEBO
5.0
Vde
IC
1000
mAde
1.0
B.O
Watt
mWrC
Total Device Dissipation @ TA = 25'C
Oerate above 25'C
Po
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
2.5
20
Watts
mWrC
TJ, Tstg
-55 to +150
·C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
RruC
50
'CIW
Thermal Resistance, Junction to Ambient
RruA
125
'CIW
ELECTRICAL CHARACTERISTICS
MPSW51
MPSW51A
Unit
30
40
Collector-Base Voltage
Collector Current -
Value
VCEO
3 Collector
~(Q
1 Emitter
HIGH CURRENT TRANSISTOR
PNP SILICON
(TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 ,.Ade, IE = 0)
V(BR)CEO
MPSW51
MPSW51A
30
40
V(BR)CBO
MPSW51
MPSW51A
Emitter-Base Breakdown Voltage
(IE = 100 ,.Ade, IC = 0)
40
50
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 40 Vde, IE = 0)
ICBO
MPSW51
MPSW51A
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
5.0
-
-
Vde
Vde
Vde
,.Ade
0.1
0.1
0.1
,.Ade
ON CHARACTERlSncs(1)
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vdc)
(lC = 1000 mAde, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lc = 1000 mAde, IB = 100 mAdc)
Base-Emitter On Voltage
(lC = 1000 mAde, VCE
= 1.0 Vde)
-
55
60
50
-
VCE(sat)
-
0.7
Vde
VBE(on)
-
1.2
Vde
IT
50
-
MHz
Cobo
-
30
pF
SMAll-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-314
MPSW51, MPSW51A
FIGURE 1 -
DC CURRENT GAIN
200
-
~ 100
FIGURE 2 - COLLECTOR SATURATION REGION
10
r-_
"''"
c
~
'"
c
>
co
c
70
13
~
50 r---- r- -
1
I-- r-
08
VCE = 1.0 V
_ TJ = 2SoC
3
1000
FIGURE 3 - ON VOLTAGES
10
TJ = 2SoC
IIIII
~O.6
VSE(ONI
III
@IV~E ~nlv
co
~
~ 0.4
:>
III
o
1.0 2.0
S.O 10
I
300
~
200
c
~
:!-
II IIII
~
:;;
-
100
2:
70
~
./
~-2.4
-28
20
SO 100 200 SOO 1000
IC. COLLECTOR CURRENT (rnA)
10 2.0
S.O 10
-
50
20
SO 100 200 SOO 1000
IC. COllECTOR CURRENT (rnA)
FIGURE 6 - CAPACITANCE
TJ = 2SoC
-
'"
SO 100
-2.0
~I-'
~ 120
i""",
.......
;a
'"
'"
~
0.2
,.
3
FIGURE 4 - TEMPERATURE COEFFICIENT
I ,11111 U--+tr
~
~
"
~,.
-08
VSE (SATI @ le/ls = 10
0.8
O.OS 01
<'i
00
"
,T:'
IIIr
0.01 0.02
'"'"'"
M
3
I~I
~
o
SOO
..
3
"
Q
8
50
100
200
IC. COLLECTOR CURRENT (mAl
"
~
00
n
04
w
20
•
TJ = 2SOC
<'>
<'i
M
06
!;: 0.2
20
10
Ii
~
'"
""
>-
i
I IIIIII
\
II
1\
VCE -10V
TJ = 2SoC
1= 20 MHz
-
1\
40
'-..
:0
'-'
.t:- 30
10
20
SO
100
200
IC. COLLECTOR CURRENT (mAl
SOO
1000
r--
-
-
r--
~
SOlO
15
10
20
30
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-315
(
Cibo
r--
Cobo
I--
20
4.0
25
5.0
MPSW51, MPSW51A
FIGURE 7
~
ACTIVE REGION-SAFE
OP~RATING
AREA
lK
•
100 ~S'500
0.2
0
0.05
0.1
0.2
\
r---.....
r-
10
20
50
100
~ -1.2
50
1.0
2.0
.5
!i;
V
0- 1.6
I--
I--
500
TJOO 25°C
r---r-.
I'--
....
......
r-...
0
-2.4
~
....
Cabo
0
~ -2.8
~
r-.
0VB for VBE
~ -2.0
200
Cibo
./
8
~
5.0
10
20
50
100
IC, COLLECTOR CURRENT ImA)
70
u
~
IV
FIGURE 5 - CAPACITANCE
-O.S
~
n
VCE( ..,)@ IC/IS: 10
0
5.0
FIGURE 4 - BASE-EMITTER
TEMPERATURE COEFFICIENT
"
S
~
2
r-
-I'-
0.5
1.0
2.0
5.0
IS, BASE CURRENT (mA)
VSE(,n) ~ VIC~
......
4
j'\,
0
~
8
---
l-H:±±t:t:!:r--- f-
6
5oom~
250mA
500
...... 1--'
VSE( .. ,)@ IC/IS: 10
'"
~
'"
II III
II III
O.S
>
~
~~I~ 25'C
TJ: 25'C
O.S
300
200
FIGURE 3 - ON VOLTAGES
1.0
0
100
70
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
100
200
0
01
500
01
051010
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
2·318
10
50
100
MPSW55, MPSW56
FIGURE 7 - ACTIVE REGION - SAFE OPERATING AREA
FIGURE 6 - CURRENT GAIN - BANDWIDTH PRODUCT
20 0
I
I I
I- VCE"20V
TJ" 25 0 C
r-- t---
V
,
0
0
k
100 #s
0
-;
/
Duty Cycle'; 10%
kr-- t--
TC
0
0
0
20
0
50
20
30
J 0 10
IC, COLLECTOR CURRENT (mAl
50
70 100
10
1.0
200
-
25°C.e:r~
de
lOs
N°~s
-..
Current limit
--
--1.0
Thermaillmtt
_ f-MPSW55
Second Breakdown limit - I-MPSW56
10
20
50
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-319
:>
I I
TA-15°C
Or--
0
~
60 80 100
11
•
MPSW63
MPSW64
MAXIMUM RATINGS
Symbol
MPSW63
MPSW64
Collector-Emitter Voltage
VCES
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
1.0
B.O
Watt
mWFC
Rating
Collector Current -
Continuous
Unit
Total Device Dissipation @ TA = 25"C
Derate above 25"C
PD
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
2.5
20
Watts
mWFC
TJ, Tstg
-55to +150
"C
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
Collector 3
Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RruC
50
"CIW
Thermal Resistance, Junction to Ambient
RruA
125
"CIW
ELECTRICAL CHARACTERISTICS (TA
1
DARLINGTON TRANSISTOR
PNP SILICON
= 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
-
Vde
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff ClII'rent
(VEB = 10 Vde, IC = 0)
lEBO
-
100
nAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 !lAde, VBE = 0)
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 10 mAde, VCE = 5.0 Vde)
(lC
=
hFE
100 mAde,VCE = 5.0 Vde)
MPSW63
MPSW64
5,000
10,000
MPSW63
MPSW64
10,000
20,000
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 0.1 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 5.0 Vde)
VBE(on)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 5.0 Vde, f = 100 MHz)
(1) Pulse Test: Pulse Width", 300
(2) IT = Ihfel' ftest·
p,S,
Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-320
-
-
-
1.5
Vde
2.0
Vde
MPSW63, MPSW64
TYPICAL ELECTRICAL CHARACTERISTICS
•
FIGURE 1 - DC CURRENT GAIN
200
;£
'"
TJ ° 12SoC
I
100
70
~ SO
z
;;: 30
....
'"
20
I-
-
-
2SoC
--
--
-
f-
VCEo2.0V
S.OV
-....--
'-
-==
"
10
u
e
7.0
-
....10V
"-
"-
-"""
-SSoC
± 50
--r-
~
30
20
03
O.S
0.7
1.0
2.0
3.0
S.O
7.0
10
20
30
50
70
100
300
200
IC, COLLECTOR CURRENT ImAI
FIGURE 3 - COLLECTOR SATURATION REGION
FIGURE 2 - "ON" VOLTAGE
~ 2. 0
2.0
ITJ=25°C
III
~
~
w
UJ
11.1.
I 1.1.,1
VaElsatl@lc/la ° : :
1.6
.....,..
1.2
'"~
0
> O.B
>'
V
~
1. a
:/
o
>
~
1.6
..
~
ttt
~
VaElon) @VCE ° S 0 V
Ic/lao 100_
-
04
0.3
14
~
1.2
'"o
~
1.0
8
0.8
>
06
01 0.2
~
o
O.S
10
203.0
S.O
10
20 30
SO
100
200 300
t
IC ° 10 rnA
w
:::
f-""
J.l+
VCEI",)@ Ic/la ° 1000
50 rnA
100 rnA
1\
1\ ....
0.5 1.0 2,0
Ie. COLLECTOR CURRENT (mA!
g
+2.0
~
+10
~
::J
-SOoC TO +2SoC-
~
~
-2.0
~ -30
tzfL
0S
10
-50 0 TO +25 0 C
-r-r
·1
~
+25 0 C TO
20 30 5.0
10
20 30 50
IC, COLLECTOR CURRENT IrnAI
100
VCEo20V
200
~~
Z~
I
Z
TImll
J
300
:; 100
'RWC for VCE(satl
IR I I If~IIV I
~ -4.0 -I ftB ~r BE
0:
I
-S.O
0.3
'"
....
e
~V
-1.0
:;;
g
~
+[Yf:lr125o~f
a
u
50 100 200 500 lK 2K
SK 10K
TJ ° 25°C
t; 400
U
"
600
~
+3.0
300 mAl
FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT
i
+S 0 ·APPLIES FOR Ic/la" hFE!100
+40
ffi
50 10 20
175 rnA
la. aASE CURRENT I.A)
FIGURE 4 - TEMPERATURE COEFFICIENTS
..s
>-
T~: 2~J~
1\
o
b...-
;;:
60
'"~
40
~
30
.i-
20
0,3 0.5
:..-:
+125 0 C
200300
~
10 V
~
\
5.0 V\
f\-
1
1.0
20 30 50
2.0 3.0 5.0
10
IC, COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-321
"\\
..&il
100
200300
MPSW63, MPSW64
FIGURE 6 - CAPACITANCE
FIGURE 7 - ACTIVE REGION. SAFE OPERATING AREA
20
•
2k
r- =-'::¥h~rr~!lll~~t
Cobo
5
I
- - Second Breakdown limit
C,bo
"-
'"
ffi
lk
a
500
g§
l1mS~
'"
t;j
"-
2. 0
0.1
::;
1:)
TJ; 25°C
f -1.0 MHz
.!d>
II IIII
0.20.3 0.5
1.0
2.030 5.0
10
{A
200
VR. REVERSE VOLTAGE (VOLTS)
I
....
..b.
....
1',
DUTY CYCLE,s;; 10%
100
15
20 30
25°C
...
5.0
2.0
TC;
2-322
.....
lOs ......
25~ ....
'"
...
1J.
10
VCE. COLLECTOR·EMITTER VOLTAGE (V)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
~
~
,
... ,
co
"3. 0
100 "s
J§.
' ..... .....
20
30
MPSW92
MPSW93
MAXIMUM RATINGS
Symbol
Rating
MPSW92 MPSW93
Unit
200
Vde
200
Vde
Collector-Emitter Voltage
VCEO
300
Collector-Base Voltage
VCBO
300
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
1.0
8.0
Watt
mWfC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
2.5
2Q
Watts
mWfC
Operating and Storage Junction
Temperature Range
-55 to
TJ, Totg
+ 150
3 Collector
";,~
°c
1 Emitter
HIGH VOLTAGE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
50
°CIW
Thermal Resistance, Junction to Ambient
ROJA
125
°CIW
Characteristic
ELECTRICAL CHARACTERISTICS (TA
•
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
PNP SILICON
~ 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage( 1)
(lc ~ 1.0 mAde, IB ~ 0)
Vde
V(BR)CEO
MPSW92
MPSW93
Collector-Base Breakdown Voltage
(lC ~ 100 !lAdc, IE ~ 0)
300
200
V(BR)CBO
MPSW92
MPSW93
Emitter-Base Breakdown Voltage
(IE ~ 100 !lAde, IC ~ 0)
300
200
V(BR)EBO
Collector Cutoff Current
(VCB ~ 200 Vde, IE ~ 0)
(VCB ~ 160 Vde, IE ~ 0)
ICBO
MPSW92
MPSW93
Emitter Cutoff Current
(VEB ~ 3.0 Vde, IC ~ 0)
lEBO
5.0
-
-
Vdc
-
-
Vdc
!-lAde
-
0.25
0.25
0.1
!-lAde
ON CHARACTERISTICS(1)
DC Current Gain
(lc ~ 1.0 mAde, VCE ~ 10 Vde)
(lC ~ 10 mAde, VCE ~ 10 Vde)
(IC ~ 30 mAde, VCE ~ 10 Vde)
hFE
,
Collector-Emitter Saturation Voltage
(lc ~ 20 mAde, IB ~ 2.0 mAde)
Both Types
Both Types
MPSW92
MPSW93
25
40
25
25
VCE(sat)
MPSW92
MPSW93
Base-Emitter Saturation Voltage
(lc ~ 20 mAde, IB ~ 2.0 mAde)
VBE(sat)
-=
-
Vdc
-
-
0.5
0.5
0.9
Vdc
50
-
MHz
-
6.0
8.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 10 mAde, VCE ~ 20 Vde, f ~ 20 MHz)
Collector-Base Capacitance
(VCB ~ 20 Vde, IE ~ 0, f
fT
Ceb
~
1.0 MHz)
MPSW92
MPSW93
(1) Pulse Test: Pulse Width", 300 /-
~
co
~
<0
"''-'
\
;;;
r--. ..... ~
2[.C-
~
!ii
50
0.2 ric ='20
...
-f;!
<.>
201.0
2.0
50
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT ImAI
I
I
I
o
70 100
0.1
FIGURE 3 - ON VOLTAGES
2.5
1.2
TJI=l5 0C
l1.5
0.6 I--
~
c
~. 0.4
-
-,...
1.0
2.0
5.0
10
lB. BASE CURRENT (mAl
~
I,
i
_ VBElsatl@IC/IB= 10
l-
:; =
I
IV
i=
h
RINC for VCElsatl
05
-550C to 2SoC
I
-0.5
-
10
2.0
---
~-1. 5 -
5.0
........
'-
5.0 7.0 10
20
3D
IC. COLLECTOR CURRENT (mAl
50
-5rC~
RINBforVBE
I
a.:: -2.0
5.0
VCE( ••11 @ ICIIB
3.0
-2.5
70 100
FIGURE 5 - CAPACITANCE
I
10
20
3.0
5.0 70 10
20
30
IC. COLLECTOR CURRENT (mAl
Ceb
-
~
TJ=250C=
~
'"~
D_
O
70
'" 50
.........
V
l:;
~
10
~ 30
7.0
50
70
100
FIGURE 6 - CURRENT GAIN - BANDWIDTH PRODUCT
~100
100
70
50
J
250C to 1250C
1.0
~
'- VBE(onl @VCE = 10 V
VCE( ..tl@IC/IB= 10
20:30
10
~
o
,
Ccb
z
~ 5.0
~
u· 3.0
./
/'
\
TJ = 25°C
VCE" 20 V
f = 20 MHz
:/
20
~
2.0
1.0
-
"- ~
ffi -1.0
0.2
"''-'~
ti
«
0.5
2.0
1.0
~
0.2
..........
Ic=30mA
FIGURE 4 - TEMPERATURE COEFFICIENTS
I I I
~
~ 0.8
-""\
~A
0.1
1.4
'" r-- -
\
riC = 10 mA
g
30
\
0.3
co
~
TJ = 25°C-
0.2
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTSI
50
100
i:l
..flO
200
1.0
2.0
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-324
50 70
100
MPSW92, MPSW93
FIGURE 7 - ACTIVE REGION SAFE OPERATING AREA
Ik
---
500
1
::>
1001"
1.0, "
~ 100
o
~
"-
"-
!i;; 200
!!§
Current limit
- Thermal limit
ISecond Breakdown limit
1.0 m,
50
8
20
10
10
TA = 25°C
,.Ic = 25°C
" 1', \1+-.~
I N-l
Duty Cycl.';; 10%
20
50
100
MPSW92
r
MrSrr
200 300
VCE. COLLECTOR-EMrrTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-325
•
MSD6100
•
CASE 29-04, STYLE 3
TO-92 (TO-226AA)
,,-ij'"
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltege
VR
100
Vdc
Recurrent Peak Forward Current
IF
200
mA
'FM(surge)
500
mA
PO(l)
625
5.0
mW
mWrC
TJ, Tstg(l)
-55 to + 135
°C
Peak Forward Surge Current
(Pulse Width = 10 ILsec)
Power Dissipation @TA
Derate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
2 3
3 Cathode
DUAL SWITCHING DIODE
COMMON CATHODE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Breakdown Voltage
(I(BR) = 100 !LAdc)
V(BR)
100
-
Vdc
Reverse Current
(VR = 100 Vdc)
(VR = 50 Vdc)
(VR = 50 Vdc, TA
'R
-
5.0
0.1
20
0.55
0.67
0.75
0.7
0.82
1.1
Characteristic
=
125°C)
!LAdc
Forward Voltage
(IF = 1.0 mAde)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
Capacitance
(VR = 0)
C
-
1.5
pF
trr
-
4.0
ns
Reverse Recovery Time
(IF = IR = 10 mAdc, VR
= 5.0 Vdc, irr =
Vdc
1.0 mAdc)
(1) Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: Po
Derate above 25°C - 8.0 mWrC, TJ = -65 to +150°C, (lJC = 125°CIW.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-326
=
1.0 W @ TC
=
25°C,
MSD6102
II
CASE 29-04, STYLE 3
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
Rating
VR
70
Vdc
Recurrent Peak Forward Current
IF
200
mA
IFM(surge)
500
mA
PD(1)
625
5.0
mWrC
-55to +135
°c
Peak Forward Surge Current
(Pulse Width ~ 10 "",)
Power Dissipation @ TA
Derate above 25°C
~
25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg(1)
mW
DUAL DIODE
COMMON CATHODE
(1) Continuous package improvements have enhanced these guaranteed Maximum
Ratings as follows: Po ~ 1.0 W @ TC ~ 25°C, Derate above 25°C - 8.0 mW/oC,
TJ ~ ~65 to + 150°C, ruc ~ 125'C,w.
ELECTRICAL CHARACTERISTICS (TA
~
25'C unless otherwise noted.)
Characteristic
Breakdown Voltage
(I(BRI ~ 100 !--.TJ = -11"1:
o
U1.8
10
100
It. CDUfCTOR CURRENT {mAl
II
10DD
III
It:. CIIUECTIIII 0UIIIIlIIT (IU.D.C.)
CAI'ACITANCE
"ON" VOLTAGES
I.4
I.2
c.,
0
8r--
---
1
I
O.Z
D. I
8.
1.8
D
18
D.l
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-338
i-!l
VIE(.., : -ID
_ _"wVct-I.OV
I 1I11~1I
Vcttlll'
it - 18
U~
1Il10
P2N3019
•
TEMPERATURE COEFFICIENTS
I+Zsoc¥o +ISOoC
I
11111111 I
(-SSOC'VO ZsoCI
I
II'IC FOR Yatllli
0
!1-0·8
i£
111
-SSoC TO
As = 4.3 til
+Zs'~C
11'188 FORVBE
IC=IO~
i..: 2.0
+ZSoC TO +ISOoC
II II 11111 I
-1.8
O.S 1.0
'1'R. = 1.0lin'
z
I /I llIll I
IC = 100 I'A
10.0
SO 100
Ie. COLLECTOR CURRENT (mAl
500 1000
0.1
1.0
10
I. FREQlJEllCI' I11III1
100
CURRENT GAIN BANOWIDTH "'OOIICT _
COLLECTOR CURRENT - 1 lIMa ....
SOURCE RESISTANCE EFFECTS
"
P2N3019
14.0
I~II.W;
lZ.0
VCE=10V
TA = ZSoC
iii 10.0
~
:!!.
le= 100
II!
8.0
::0
If!
III
co
8.0
II
4.0
z
II
2.0
a
0.1
1.0
100
'-- fF>2N3020
~
I'~Or
nllllill
10.0
100.0
1000.0
As. SOURCE RESISTANCE (k OHMSI
o
1.0
0.1
Ie COWCTOR CU_11IIA *1
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-339
II
P2N4033
•
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
SO
Vdc
Collector-Sase Voltage
VCBO
SO
Vdc
Emitter-Sase Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Total Device Dissipation @TA
Derate above 25°C
Collector Current - Continuous
= 25°C
Po
1.0
B.O
W
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
2.5
20
W
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
I
Max
Unit
Thermal Resistance. Junction to Case
Symbol
ReJC
50
°C/W
Thermal Resistance, Junction to Ambient
ReJC
125
°C/W
3 Collector
~~
1 Emitter
ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakc;lown Voltage
(lC = lOrnA)
V(BR)CEO
80
-
V
Collector-Base Breakdown Voltage
(lC = 10p.A)
V(BR)CBO
80
-
V
Emitter-Base Breakdown Voltage
(IE = 10p.A)
V(BR)EBO
5.0
-
V
-
5.0
50
nA
p.A
-
10
nA
40
75
100
70
25
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 60 V)
(VCB = 60 V, TA = 150'C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 V)
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC = 100 rnA, VCE = 5.0 V, -55'C)
(lC = 100 p.A, VCE = 5.0 V)
(lc = 100 rnA. VCE = 5.0 V)
(lc = 500 rnA, VCE = 5.0 V)
(lc = 1.0 A, VCE = 5.0 V)
-
hFE
P2N4033
P2N4033
P2N4033
P2N4033
P2N4033
Collector-Emitter Saturation Voltage
(lC = 150 rnA, Ie = 15 rnA)
(lC = 500 rnA, Ie = 50 rnA)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 rnA. Ie = 15 rnA)
(lC = 500 rnA, Ie = 50 rnA)
VeE(sat)
V
-
0.15
0.5
-
0.9
1.1
-
V
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-340
-
300
P2N4033
I
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
25
pF
150
pF
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCE
= 10 V,I = 1.0 MHz)
Input Capacitance
(VEB = 0.5 V, I = 1.0 MHz)
Current Gain -- Bandwidth Product
(lC = 50 rnA. VCC = 10 V, I = 100 MHz)
Cobo
-
C,bo
--
IT
150
MHz
SWITCHING CHARACTERISTICS
Turn-On Time (see Figure 1)
(IC = 500 rnA, IB1 = 50 rnA)
ton
-
100
ns
Turn-all Time (see Figure 1)
(lc = 500 rnA, IB1 = IB2 = 50 rnA)
toll
-
400
ns
(1) Pulse Width = 300
~s,
Duty Cycle 1.0%.
Vce- SOV
VBB+5V
(
;
100.11
100.11
11V
.Jl...
100.11
...Y'
10J-ls
lSO.l1
ose ILLOSCOPE
"
-FIGURE 1: SWITCHING TIMES TEST CIRCUIT
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-341
•
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-342
3
1.
,l,~~
2
TO-226AC
SOT-23
CASE 318-02103
TQ-236AA1AB
Surface Mount
Products
1
SO-14
CASE 751A-02
SO-16
CASE 7518-03
A wide variety of discrete components from Motorola's
repertoire of reliability-proven semiconductor processes and
geometries are available in the SOT-23, SO-14 and SO-16
packages. Products include Bipolar and Field-Effect Transistors, Diode Arrays, Switching Diodes, Zener and Varactor
Diodes.
Contact your Motorola representative for ordering information.
The Product Portfolio is constantly being expanded to meet
the requirements for surface mount technology.
Tape and Reel is available for high volume, automated
processing.
Contact the Motorola sales representative if there is a requirement for product that is not represented in this publication.
3-1
•
MAXIMUM RATINGS
Rating
Svmbol
Value
Unit
VOSS
60
Vdc
VDGR
60
Vdc
10
10
10M
±115
±75
±SOO
mA
VGS
±40
Vdc
Po
200
SO
0_16
mW
Drain-Source Voltage
Drain-Gate Voltage (RGS
Drain Current -
=
1 Mil)
Continuous
TC
TC
= 25"C(1)
= 100"C(1)
TC
TC
= 25"C
= 100"C
Pulsed(2)
Gate-Source Voltage
•
Total Power Dissipation
Derate above 25"C ambient
2N7002
CASE 318-02. STYLE 21
SOT-23 (TO-236AA)
mWrC
THERMAL CHARACTERISTICS
Characteristic
Svmbol
Max
Po
225
mW
l.S
mWrC
R8JA
556
"C/mW
Po
300
mW
TMOS FET
TRANSISTOR
2.4
mWrC
N-CHANNEL
R8JA
417
"C/mW
TJ, Tsta
150
"C
Total Device Dissipation FR-5 Board,'
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Unit
*FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
2N7002
= 702
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
I
Characteristic
Svmbol
Min
TVp
Max
Unit
V(BR)DSS
60
-
-
Vdc
-
-
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0,10 = 10,.,.A)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 V) TJ = 25"C
TJ = 125'C
lOSS
/L Adc
-
Gate-Bodv Leakage Current Forward
(VGS = 20 Vdc)
IGSSF
-
1.0
500
-
100
nAdc
Gate-Body Leakage Current Reverse
(VGS = -20 Vdc)
IGSSR
-
-
-100
nAdc
(1) The Power Dissipation of the package may result in a lower continuous drain current.
(2) Pulse Width", 300 ,.,.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-2
2N7002
ELECTRICAL CHARACTERISTICS Icontinued) ITA
~ 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
VGSlth)
1.0
-
2.5
Vdc
1010n)
500
-
-
mA
-
-
3.75
1.5
-
-
-
7.5
13.5
7.5
13.5
ON CHARACTERISTICS'
Gate Threshold Voltage
(V OS ~ VGS, 10 ~ 250 /LA)
On-State Drain Current
IVOS'" 2.0 VOSlon), VGS ~ 10 V)
Static Orain·Source On-State Voltage
IVGS ~ 10 V, 10 ~ 500 mAl
IVGS ~ 5.0 V, 10 ~ 50 mAl
VOSlon)
Static Drain-Source On-State Resistance
rOSlon)
IVGS
IVGS
~
~
10 V, 10
5.0 V, 10
~
500 mAl
~
50 mAl
TC
TC
Tc
TC
~
~
~
~
25"C
100"C
25"C
100"C
Forward Transconductance
Vdc
Ohms
9FS
80
-
Ciss
-
-
50
pF
Coss
-
-
25
pF
Crss
-
-
5.0
pF
VSO
-
-
-1.5
V
IS
-
-
-115
mA
ISM
-
-
-800
mA
-
mmhos
IVOS '" 2.0 VOSlon), 10 ~ 200 mAl
DYNAMIC CHARACTERISTICS
Input Capacitance
IVOS ~ 25 V, VGS
~
0, f
~
1.0 MHz)
Output Capacitance
IVos ~ 25 V, VGS
~
0, f
~
1.0 MHz)
Reverse Transfer Capacitance
(VOS
~
25 V, VGS
~
0, f
~
1.0 MHz)
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Turn-Off Oelay Time
IVoo ~ 30 V, 10 '" 200 mA,
RG ~ 25 n, RL ~ 150!l)
BODY-DRAIN DIODE RATINGS
Oiode Forward On-Voltage
(IS ~ 11.5mA,VGS ~ OV)
Source Current Continuous
IBody Oiode)
Source Current Pulsed
'Pulse Test: Pulse Width", 300 /LS, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-3
•
MAXIMUM RATINGS
Rating
Symbol
BCBD7
BCBDB
Unit
Collector-Emitter Voltage
VCEO
45
25
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
5.0
5.0
V
IC
500
500
mAdc
Collector Current -
•
Continuous
BCS07
BCSOS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
1.B
mWrC
ROJA
556
°CimW
PD
300
mW
2.4
mWrC
RIIJA
417
°CimW
TJ, Tsto
150
°c
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,'* TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
GENERAL PURPOSE
TRANSISTOR
*FR-5 ~ 1.0 x 0.75 x 0.62 on.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
BCB07-16
BCB08-25
~
~
SA; BCB07-25
5F; BCBOB-40
~
~
5B; BC807-40
5G
~
5C; BCBOB-16
~
5E;
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
V(BR)CEO
BCB07 Series
BC808 Series
Collector-Emitter Breakdown Voltage
(VEB ~ 0)
Emitter-Base Breakdown Voltage
-
50
30
-
-
5.0
5.0
-
-
-
Collector Cutoff Current
(VCB ~ 20 V)
(VCB ~ 20 V, TJ ~ 150°C)
ICBO
-
-
100
5.0
100
-
250
160
-
400
250
40
-
BOO
V
V
V(BR)EBO
BCB07 Series
BC80B Series
-
-
V(BR)CES
BC807 Series
BC80B Series
-
45
25
nA
p,A
ON CHARACTERISTICS
DC Current Gain
(lC ~ 100 mA, VCE ~ 1.0 V)
hFE
BCB07-16
BC80B-16
BC807-25
BC80B-25
BC807-40
BCBOB-40
(lc ~ 500 mA. VCE ~ 1.0 V)
hie
-
Collector-Emitter Saturation Voltage
(lC ~ 500 mA. IB ~ 50 rnA)
VCE(sat)
-
-
0.7
V
Base-Emitter On Voltage
(lc ~ 500 rnA, IB ~ 1.0 V)
VBE(on)
-
-
1.2
V
fT
200
-
-
MHz
Cobo
-
10
-
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc ~ 10 mA, VCE ~ 5.0 Vdc, f ~ 35 MHz)
Output Capacitance
(VCB ~ 10 V, f ~ 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-4
MAXIMUM RATINGS
Symbol
BC8l7
BC8l8
Unit
Collector-Emitter Voltage
VCEO
45
25
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
5.0
5.0
V
IC
500
500
mAde
Rating
Collector Current -
Continuous
BCSl7
BCSIS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA!AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mW/"C
R9JA
556
·C/mW
Po
300
mW
2.4
mW/"C
R9JA
417
·C/mW
TJ, Tsta
150
·C
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25·C
Derate ab.ove 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ~~
2 Emitter
GENERAL PURPOSE
TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
BC817-16
BC818-25
•
3 Collector
= 6A;
= 6B;
=
=
BC817-25
6F; BC818-40
BC817-40
=
6C; BC818-16
= 6E;
6G
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
45
25
-
-
50
30
-
-
5.0
5.0
-
-
-
-
100
5.0
100
-
250
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
V(BR)CEO
BC817 Series
BC818 Series
Collector-Emitter Breakdown Voltage
(VEB = 0)
V(BR)CES
BC817 Series
BC81S Series
Emitter-Base Breakdown Voltage
V
V(BR)EBO
BC817 Series
BC818 Series
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150·C)
ICBO
V
nA
p.A
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mA, VCE
hFE
=
BC817-l6
BC818-16
BC817-25
BC818-25
BC817-40
BC818-40
1.0 V)
160,
-
400
-
600
hfe
250
40
Collector-Emitter Saturation Voltage
(lC = 500 mA, IB = 50 mAl
VCE(sat)
-
-
0.7
V
Base-Emitter On Voltage
(lC = 500 mA, VCE = 1,0 V)
VBE(on)
-
-
1.2
V
fT
200
-
-
MHz
Cobo
-
10
-
pF
(lc
=
500 mA, VCE
=
1,0 V)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(IC = 10 mA. VCE = 5.0 Vdc, f
= 35 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-5
MAXIMUM RATINGS
Symbol
BC846
BC847
BC848
Unit
Collector-Emitter Voltage
Rating
VCEO
65
45
30
V
Collector-Base Voltage
VCBO
BO
50
30
V
Emitter-Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAde
Collector Current -
Continuous
BC846A,B
BC847A,B,C
BC848A,B,C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.B
mWf'C
ROJA
556
'C/mW
Po
300
mW
2.4
mWf'C
ROJA
417
'C/mW
TJ, Tsto
150
'c
Total Device Dissipation FR-5 Board,*
TA = 25'C
Derate above 25'C
•
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5
=
1.0
x 0.75 x 0.62 in.
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1ABI
3 Collector
,~' ~()
2 Emitter
GENERAL PURPOSE
TRANSISTOR
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
BCB46A = lA; BCB46B = lB; BC847A = lE; BCB47B
BC848A = lJ; BCB48B = lK; BCB4BC = lL
I
=
IF; BCB47C
=
NPN SILICON
lG;
Refer to BC546 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Min
. Typ
Max
65
45
30
-
-
BO
50
30
-
-
6.0
6.0
5.0
-
-
-
-
-
-
15
5.0
BCB46A, BC847A,BC848A
BCB46B, BC847B, BC84BB
BCB47C, BC848C
-
90
150
270
-
BCB46A. BCB47A. BC846A
BC846B, BCB47B, BCB48B
BCB47C, BCB48C
110
200
420
lBO
290
520
220
450
BOO
-
-
-
-
0.7
0.9
-
100
-
-
Cobo
-
-
4.5
pF
NF
-
-
10
dB
Characteristic
Symbol
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
(VEB = 0)
Emitter-Base Breakdown Voltage
V(BR)CEO
BC846A,B
BC847A,B,C
BC846A,B,C
V(BR)CES
BCB46A,B
BC847A.B,C
BCB4BA,B,C
V(BR)EBO
BC846A,B
BC847A,B,C
BC848A,B,C
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150'C)
ICBO
-
V
-
V
V
nA
!lA
ON CHARACTERISTICS
DC Current Gain
(lC = 10 !lA, VCE
(lc
hFE
= 5.0 V)
= 2.0 rnA. VCE = 5.0 V)
Collector-Emitter Saturation Voltage
(lc = 10 rnA. la = 0.5 rnA)
(lC = 100 rnA. la = 5.0 rnA)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 rnA, la = 0.5 rnA)
(lc = 100 rnA, IB = 5.0 rnA)
VaE(sat)
-
-
-
V
0.25
0.6
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 10 rnA, VCE = 5.0 Vdc, f
fy
MHz
= 35 MHz)
Output Capacitance
(Vca = 10 V, f = 1.0 MHz)
Noise Figure
(lC = 0.2 rnA, VCE = 5.0 Vdc, RS
f = 1.0 kHz, BW = 200 Hz)
= 2.0 kil,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-6
MAXIMUM RATINGS
Symbol
BC850
BC849
Unit
Collector-Emitter Voltage
Rating
VCEO
45
30
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
IC
100
100
mAde
Collector Current -
Continuous
BC849B,C
BC850B,C
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWf"C
ROJA
556
°C/mW
Po
300
mW
2.4
mWf"C
ROJA
417
°C/mW
TJ, Tstg
150
°c
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~' ~-©
2 Emitter
LOW NOISE
TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
I BC849B = 2B; BC849C = 2C; BC850B = 2F; BC850C = 2G
Refer to BC549 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
BC850B,C
BC849B,C
Collector-Emitter Breakdown Voltage
(VEB = 0)
45
30
V(BR)CES
BC850B,C
BC849B,C
50
30
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, TA = 150°C)
ICBO
5.0
-
15
5.0
V
V
V
nA
pA
ON CHARACTERISTICS
DC Current Gain
(lC = 10 pA, VCE
(lc
hFE
= 5.0 V)
= 2.0 mA, VCE = 5.0 V)
-
BC849B, BC850B
BC849C, BC850C
-
-
150
270
-
BC849B, BC850B
BC849C, BC850C
200
420
290
520
450
800
-
-
-
0.25
0.6
0.7
0.9
-
Collector-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl
(lC = 100 mA,lB = 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl
(lC = 100 mA, IB = 5.0 mAl
VBE(sat)
-
V
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 10 mA, VCE = 5.0 Vdc, f
=
fT
100
35 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
(lC = 0.2 mAde, VCE = 5.0 Vdc, RS
f = 1.0 kHz, BW = 200 Hz)
Cobo
-
NF
-
= 2.0 k!l,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-7
-
-
MHz
4:5
pF
4
dB
•
MAXIMUM RATINGS
Symbol
' BC856
BC857
BC858
Unit
Collector-Emitter Voltage
Rating
VCEO
65
45
30
V
Collector-Base Voltage
VCBO
80
50
30
V
Emitter-Base Voltage
VEBO
5.0
5.0
5.0
V
IC
100
100
100
mAde
Collector Current -
Continuous
BC856A,B
BC857A,B,C
BC858A,B,C
THERMAL CHARAcTERISTICS
Characteristic
II
Max
Unit
Po
225
mW
1.8
mW/,C
R9JA
556
'C/mW
Po
300
mW
2.4
mW/,C
R9JA
417
'C/mW
TJ, Tstg
150
'c
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5
=
1.0 x 0.75 x 0.62 in.
CASE 318-02/03, STYLE 6
SOT-23ITO-236AA/AB)
Symbol
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
3 Collector
,~' ~~
2 Emitter
GENERAL PURPOSE
TRANSISTOR
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
BC856A
BC858A
= 3A; BC856B = 3B; BC857A = 3E;
= 3J; BC858B = 3K; BC858C = 3L
BC857B
= 3F;
BC857C
PNP SILICON
= 3G;
Refer to BC5S6 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
V(BR)CEO
BC856 Series
BC857 Series
BC858 Series
65
45
30
Collector-Emitter Breakdown Voltage
(VEB = 0)
BC856 Series
BC857 Series
BC858 Series
V(BR)CES
80
50
30
Emitter-Base Breakdown Voltage
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
5.0
5.0
5.0
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150'C)
ICBO
-
-
-
-
-
-
V
V
-
-
-
-
15
5.0
BC856A,BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
-
90
150
270
-
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
125
220
420
180
290
520
250
475
800
-
-
0.3
0.65
-
0.7
0.9
nA
pA
ON CHARACTERISTICS
DC Current Gain
(lC = 10 /LA, VCE
(lc
=
2.0 mA, VCE
=
-
hFE
= 5.0 V)
5.0 V)
Collector-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl
(lC = 100 mA, IB = 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl
(lC = 100 mA, IB = 5.0 mAl
VBE(sat)
Base-Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(lc = 10 mA, VCE = 5.0 V)
VBE(on)
V
V
V
-
-
100
-
-
Cobo
-
-
4.5
pF
NF
-
-
10
dB
0.6
0.75
0.82
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 mA, VCE = 5.0 Vdc, f
IT
= 35 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
(lC = 0.2 rnA, VCE = 5.0 Vdc, RS
f = 1.0 kHz, BW = 200 Hz)
= 2.0 kil,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-8
MHz
MAXIMUM RATINGS
Symbol
BC860
BC859
Unit
Collector-Emitter Voltage
Rating
VCEO
45
30
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
IC
100
100
mAde
Collector Current -
Continuous
BC859A,B,C
BC860A,B,C
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mW/"C
ROJA
556
'C/mW
Po
300
mW
2.4
mW/"C
ROJA
417
'C/mW
TJ, Ts!g
150
'c
Total Device Dissipation FR-5 Board,'
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,.' TA
Derate above 25'C
~
,~' i.~
25'C
2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
LOW NOISE
TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
BC859A
BC860B
~
~
~
4A; BC859B
4F; BC860C
~
•
3 Collector
4B; BC859C
4G
~
4C; BC860A
PNP SILICON
~
4E;
Refer to BC559 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
45
30
-'-
-
-
-
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
V(BR)CEO
BC860 Series
BC859 Series
Collector-Emitter Breakdown Voltage
(VEB ~ 0)
V
V(BR)CES
BC860 Series
BC859 Series
50
30
-
5.0
-
-
-
15
5.0
BC859A, BC860A
BC859B, BC860B
BC859C, BC860C
-
90
150
270
-
BC859A, BC860A
BC859B, BC860B
BC859C, BC860C
110
200
420
180
290
520
220
450
800
-
-
0.25
0.6
-
0.7
0.9
-
-
-
0.7
0.77
tr
100
-
-
MHz
Cabo
-
-
4.5
pF
NF
-
-
4.0
dB
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cutoff Current
(VCB ~ 30 V, IE ~ 0)
(VCB ~ 30 V, TA ~ 150'C)
ICBO
-
-
-
V
nA
pA
ON CHARACTERISTICS
DC Current Gain
(lc ~ 10 MA, VCE
(lc
~
2.0 rnA, VCE
hFE
~
~
5.0 V)
5.0 V)
Collector-Emitter Saturation Voltage
(lc
(lc
~
~
VCE(sat)
10 rnA, IB ~ 0.5 rnA)
100 rnA, IB ~ 5.0 rnA)
Base-Emitter Saturation Voltage
(lC ~ 10 rnA, IB ~ 0.5 rnA)
(lC ~ 100 rnA, IB ~ 5.0 rnA)
VBE(sat)
Base-Emitter On Voltage
(lc ~ 2.0 rnA, VCE ~ 5.0 V)
(lc ~ 10 rnA, VCE ~ 5.0 V)
VBE(on)
-
0.58
V
V
-
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC ~ 10 rnA, VCE ~ 5.0 Vdc, f
~
35 MHz)
Output Capacitance
(VCB ~ 10 V, f ~ 1.0 MHz)
Noise Figure
(lc ~ 0.2 mAde, VCE ~ 5.0 Vdc, RS
f ~ 1.0 kHz, BW ~ 200 Hz)
~
2.0 kil,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-9
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
32
Vde
Collector-Base Voltage
VCBO
32
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
·C/mW
Po
300
mW
Collector Current -
Continuous
BCW29
BCW30
CASE 318-02/03. STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,"
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2.4
mWrC
ROJA
417
·ClmW
TJ, Tstg
150
·C
3 Collector
,~' ~-E9
2 Emitter
GENERAL PURPOSE TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSIUCON
DEVICE MARKING
BCW29
= Cl;
BCW30
=
C2
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, IE = 0)
V(BR)CEO
32
Collector-Emitter Breakdown Voltage
(lC = 100 !LAde, VEB = 0)
V(BR)CES
32
Collector-Base Breakdown Voltage
(lC = 10 !LAde, IC = 0)
V(BR)CBO
32
-
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
V(BR)EBO
5.0
-
-
100
10
nAde
!LAde
120
215
260
500
-
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 32 Vde, IE = 0)
(VCB = 32 Vde, IE = 0, TA
ICBO
=
100·C)
-
Vde
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mAde, VCE
hFE
=
BCW29
BCW30
5.0 Vde)
Collector-Emitter Saturation. Voltage
(lC = 10 mAde, IB = 0.5 mAde)
VCE(sat)
-
0.3
Vde
Base-Emitter On Voltage
(lC = 2.0 mAde, VCE = 5.0 Vde)
VBE(on)
0.6
0.75
Vde
Cobo
-
7.0
pF
NF
-
10
dB
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCE = 10 Vde, f
Noise Figure
(lC = 0.2 mAde, VCE
BW = 200 Hz)
=
=
1.0 MHz)
5.0 Vde, RS
= 2.0 kG, f =
1.0 kHz,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-10
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAde
Collector Current -
Continuous
SCW31
SCW33
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Po
225
mW
1.8
mWrC
R6JA
556
°C/mW
PD
300
mW
2.4
mWrC
ReJA
417
°C/mW
TJ, TstQ
150
°c
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Unit
3 Collector
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,,* TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ~()
2 Emitter
GENERAL PURPOSE TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
I BCW31
=
Dl; BCW33
=
03
Refer to MPS3904 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IB = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
5.0
-
110
420
220
800
Max
Unit
OFF CHARACTERISTICS
-
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lc = 2.0 mAde, VCE
=
hFE
BCW31
BCW33
5.0 Vdc)
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
VCE(sat)
-
0.25
Vdc
Base-Emitter On Voltage
(lC = 2.0 mAde, VCE = 5.0 Vdc)
VBE(on)
0.55
0.70
Vdc
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(IE = 0, VCB = 10 Vdc, f
=
Cobo
-
4.0
pF
NF
-
10
dB
1.0 MHz)
Noise Figure
(lC = 0.2 mAde, VCE = 5.0 Vdc, RS
f = 1.0 kHz, BW = 200 Hz)
=
2.0 kil,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-11
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
32
V
Collector-Base Voltage
VCBO
32
V
Emitter-Base Voltage
VEBO
5.0
V
IC
100
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWI'C
ROJA
556
'C/mW
PD
300
mW
2.4
mWI'C
R8JA
417
'C/mW
TJ, TstQ
150
'C
Rating
Collector Current -
Continuous
BCW60A,B,C,D
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AAlAB)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,'
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" T A ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
I
AB; BCW60C
ELECTRICAL CHARACTERISTICS
~
AC; BCW60D
,~'
,:()
2 Emitter
GENERAL PURPOSE TRANSISTOR
*FR-5 ~ 1.0 x 0.75 x 0.62 in.
""Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
BCW60A ~ AA; BCW60B ~
3 Collector
NPN SILICON
~
AD
Refer to MPS3904 for graphs.
(TA ~ 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC ~ 2.0 mAde, IE ~ 0)
V(BR)CEO
32
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 1.0 !LAde, IC ~ 0)
V(BR)EBO
5.0
-
Vde
-
-
20
20
nAde
/LAde
-
20
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE ~ 32 Vde)
(VCE ~ 32 Vde, TA ~ 150'C)
ICES
Emitter Cutoff Current
(VEB ~ 4.0 Vde, IC ~ 0)
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 !LAde, VCE ~ 5.0 Vdc)
hFE
-
BCW60A
BCW60B
BCW60C
BCWSOD
20
30
40
100
(lc ~ 2.0 mAde, VCE ~ 5.0 Vde)
BCWSOA
BCWSOB
BCWSOC
BCWSOD
120
175
250
380
220
310
460
S30
(lC ~ 50 mAde, VCE ~ 1.0 Vde)
BCW60A
BCWSOB
BCWSOC
BCWSOD
SO
70
90
100
-
125
175
250
350
250
350
500
700
AC Current Gain
(lC ~ 2.0 mAde, VCE ~ 5.0 Vde, f ~ 1.0 kHz)
-
-
-
hfe
BCWSOA
BCWSOB
BCWSOC
BCWSOD
Collector-Emitter Saturation Voltage
(lC ~ 50 mAde, IB ~ 1.25 mAde)
(lC ~ 10 mAde, IB ~ 0.25 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC ~ 50 mAde, IB ~ 1.25 mAde)
(lC = 50 mAde, IB ~ 0.25 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC ~ 2.0 mAde, VCE ~ 5.0 Vdc)
VBE(on)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3·12
-
Vde
-
0.55
0.35
0.7
O.S
1.05
0.85
O.S
0.75
Vdc
Vde
BCW60A,B,C,D
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
fr
125
-
Cobo
-
4.5
pF
NF
-
6.0
dB
ton
-
150
ns
toff
-
800
ns
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 5.0 Vdc, 1= 1.0 MHz)
Output Capacitance
(VCE = 10 Vdc, IC = 0, I = 1.0 MHz)
Noise Figure
(lC = 0.2 mAde, VCE = 5.0 Vdc, RS = 2.0 kil,
I = 1.0 kHz, BW = 200 Hz)
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
(lC = 10 mAde, lSI = 1.0 mAde)
Turn-Off Time
(IS2 = 1.0 mAde, VSS = 3.6 Vdc, Rl = R2 = 5.0 kil,
RL = 990!!)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-13
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
32
V
Collector-Base Voltage
VCBO
32
V
Emitter-Base Voltage
VEBO
5.0
V
IC
100
mAde
Collector Current -
Continuous
BCW61A, BCW61B
BCW61C, BCW61D
CASE 318-02/03. STYLE 6
SOT-23 (TO-236AA1ABI
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ReJA
556
°C/mW
Po
300
mW
2.4
mWrC
ReJA
417
°C/mW
TJ, Tstg
150
°C
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
3 Collector
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
,~'
2 Emitter
GENERAL PURPOSE TRANSISTOR
DEVICE MARKING
BCW61A
=
.:()
PNP SILICON
BA; BCW61B
=
BB; BCW61C
=
BC; BCW61D
=
BD
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, IB = 0)
V(BR)CEO
32
-
Vde
Emitter-Base Breakdown Voltage
(IE = 1.0 /LAde, IC = 0)
V(BR)EBO
5.0
-
Vde
-
20
20
BCW61A
BCW61B
BCW61C
BCW61D
20
30
40
100
-
BCW61A
BCW61B
BCW61C
BCW61D
120
140
250
380
220
310
460
630
BCW61A
BCW61B
BCW61C
BCW61D
60
80
100
100
-
125
175
250
350
250
350
500
700
-
0.55
0.25
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 32 Vde)
(VCE = 32 Vde, TA = 150°C)
ICES
nAde
!LAde
ON CHARACTERISTICS
DC Current Gain
(lC = 10 /LAde, VCE
(IC
=
2.0 mAde, VCE
(IC
=
50 mAde, VCE
AC Current Gain
(lC = 2.0 mAde, VCE
hFE
= 5.0 Vde)
= 5.0 Vde)
=
1.0 Vde)
= 5.0 Vde, f =
-
-
hfe
1.0 kHz)
BCW61A
BCW61B
BCW61C
BCW61D
Collector-Emitter Saturation Voltage
(lc = 50 mAde, IB = 1.25 mAde)
(lC = 10 mAde, IB = 0.25 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 1.25 mAde)
(lC = 50 mAde, IB = 0.25 mAde)
VBE(sat)
Base-Emitter On Voltage
(lc = 2.0 mAde, VCE = 5.0 Vde)
VBE(on)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-14
-
Vde
Vde
0.68
0.6
1.05
0.85
0.6
0.75
Vde
BCW61A, BCW61B, BCW61C, BCW61D
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
Cabo
-
6.0
pF
NF
-
6.0
dB
150
ns
800
ns
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
(VCE = 10 Vdc. IC
= 0, f =
Noise Figure
(lC = 0.2 mAde, VCE
1.0 MHz)
= 5.0 Vdc,
=
RS
2.0 kll, f
=
1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn-On Time
(lC = 10 mAde, IB1
ton
=
1.0 mAde)
Turn-Oft Time
(lB2 = 1.0 mAde, VBB
= 3.6 Vdc,
Rl
=
R2
=
5.0 kll, RL
= 990 !1)
toft
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-15
-
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
32
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
800
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
ReJA
556
'C/mW
Po
300
mW
2.4
mWI"C
ReJA
417
'C/mW
TJ, Tsta
150
·C
Collector Current -
Continuous
BCW65A
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/ABI
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~' '"()
2 Emitter
'FR-5 = 1.0 x 0.75 x 0.62 in.
'"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GENERAL PURPOSE TRANSISTOR
DEVICE MARKING
I BCW65A
NPN SILICON
= EA
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
32
-
-
Vde
Collector-Emitter Breakdown Voltage
(lC = 10 !-lAde, VEB = 0)
V(BR)CES
60
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 !-lAde, IC = 0)
V(BR)EBO
5.0
-
-
Vde
-
-
20
20
nAde
!-lAde
-
-
20
nAde
35
75
100
35
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 32 Vde, IE = 0)
(VCE = 32 Vde, IE = 0, TA
ICES
=
150'C)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !-lAde, VCE = 10 Vdc)
(lC = 10 mAde, VCE = 1.0 Vdc)
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 600 mAde, IB = 50 mAde)
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
-
-
-
-
-
220
250
-
Vde
-
0.7
0.3
-
-
2.0
Vde
tr
100
-
-
MHz
Cobo
-
-
12
pF
Cibo
-
-
80
pF
NF
-
-
10
dB
ton
-
100
ns
toff
-
-
400
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
Input Capacitance
(VEB = 0.5 Vde, IC
=
0, I
=
1.0 MHz)
1.0 MHz)
Noise Figure
(lC = 0.2 mAde, VCE = 5.0 Vde, RS
I = 1.0 kHz, BW = 200 Hz)
=
1.0 ka,
SWITCHING CHARACTERISTICS
Turn-On Time
(lBl = IB2 = 15 mAde)
Turn-Off Time
(lC = 150 mAde, RL
=
150 a)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-16
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
75
Vde
Emitter-Base Voltage
VEBO
5_0
Vdc
IC
SOO
mAde
Symbol
Max
Unit
Po
225
mW
1.S
mWI"C
ROJA
556
°C/mW
Po
300
mW
2.4
mWI"C
ROJA
417
°C/mW
TJ, Tstg
150
°c
Rating
Collector Current -
Continuous
BCW66H
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate a bove 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AAlAB)
,~' ~-EQ
2 Emitter
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GENERAL PURPOSE TRANSISTOR
NPNSILICON
DEVICE MARKING
BCW66H
~
I
3 Collector
EF
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
45
Collector-Emitter Breakdown Voltage
(lc ~ 10 IlAdc, VEB ~ 0)
V(BR)CES
75
Emitter-Base Breakdown Voltage
(IE ~ 10 IlAdc, IC ~ 0)
V(BR)ESO
5.0
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE ~ 45 Vdc, IC ~ 0)
(VCE ~ 45 Vdc, IC ~ 0, TA
ICES
~
150°C)
Emitter Cutoff Current
(VEB ~ 4.0 Vdc, IC ~ 0)
lEBO
-
-
Vdc
-
Vdc
-
Vdc
-
-
20
20
nAdc
IlAdc
20
nAdc
35
75
100
35
-
-
-
ON CHARACTERISTICS
DC Current Gain
(lc ~ 100 IlAdc, VCE ~ 10 V)
(lc ~ 10 mAde, VCE ~ 10 V)
(lc ~ 100 mAde, VCE ~ 10 V)
(lc ~ 500 mAde, VCE ~ 2.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC ~ 500 mAde, IB ~ 50 mAde)
(lC ~ 100 mAde, IS ~ 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC ~ 500 mAde, IS ~ 50 mAde)
VSE(sat)
-
250
Vdc
-
-
0.7
0.3
-
-
2.0
Vdc
-
MHz
12
pF
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB ~ 10 Vdc, IE
Input Capacitance
(VEB ~ 0.5 Vdc, IC
~
0, I
~
0, I
~
~
Cobo
-
-
Cibo
-
-
SO
pF
NF
-
-
10
dB
ton
-
-
100
ns
toff
-
-
400
ns
t,-
Current-Gain - Bandwidth Product
(lc ~ 20 mAde, VCE ~ 10 Vdc, I ~ 100 MHz)
100
1.0 MHz)
1.0 MHz)
Noise Figure
(lC ~ 0.2 mAde, VCE ~ 5.0 Vdc, RS
I ~ 1.0 kHz, BW ~ 200 Hz)
~
1.0 kG,
SWITCHING CHARACTERISTICS
Turn-On Time
(lBl ~ IB2 ~ 15 mAde)
Turn-Off Time
(lC ~ 150 mAde, RL
~
150!l)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-17
MAXIMUM RATINGS
Symbol
BCW67
BCW68
Unit
Collector-Emitter Voltage
Rating
VCEO
32
45
Vdc
Collector-Base Voltage
VCBO
45
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
800
mAde
Collector Current -
Continuous
BCW67,A,B,C
BCW68,F,G
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
PD
225
mW
1.8
mWl'C
ROJA
556
'ClmW
PD
300
mW
2.4
mWrC
ROJA
417
'ClmW
TJ, Tsta
150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Unit
3 Collector
,~'
",()
2 Emitter
'FR-5 = 1.0 x 0.75 x 0.62 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GENERAL PURPOSE TRANSISTOR
DEVICE MARKING
PNP SILICON
BCW67 = DD; BCW68 = DP; BCW67A
BCW68F = DF; BCW68G = DH
=
ELECTRICAL CHARACTERISTICS (TA
DA; BCW67B
=
=
DB; BCW67C
= DC;
25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
I.
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAdc, IB = 0)
V(BR)CEO
BCW67 Series
BCW68 Series
Collector-Emitter Breakdown Voltage
(lC = 10 !lAdc, VEB = 0)
BCW67 Series
BCW68 Series
V(BR)EBO
ICES
=
=
-
45
60
-
-
V(BR)CES
Emitter-Base Breakdown Voltage
(IE = 10 !lAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 45 Vdc, IE = 0)
(VCE = 32 Vdc, IB = 0, TA
(VCE = 45 Vdc, IB = 0, TA
32
45
Vdc
-
-
-
Vdc
Vdc
-
-
20
20
10
10
-
-
20
BCW67,A,68,F
BCW67B,68G
BCW67C
75
120
180
-
-
BCW67,A,68,F
BCW67B,68G
BCW67C
100
160
250
-
250
400
630
BCW67,A,68,F
BCW67B,68G
BCW67C
35
60
100
-
-
-
1.5
Vdc
VBE(sat)
-
-
2.0
Vde
t,-
100
-
-
MHz
-
-
18
pF
-
105
pF
-
10
dB
BCW67
BCW68
BCW67
BCW68
150'C)
150'C)
5.0
-
Series
Series
Series
Series
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
-
nAdc
!lAde
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE
(lC
(lC
=
=
hFE
=
100 mAde, VCE
300 mAde, VCE
1.0 Vde)
=
=
1.0 Vdc)
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
=
(lC
=
300 mAdc, IB
500 mAde, IB
=
=
30 mAde)
50 mAde)
VC!:(sa!l
-
-
-
-
SMAU-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
Input Capacitance
Noise Figure
(VCB
(VEB
=
=
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
10 Vde, IE
0.5 Vdc, IC
Cobo
Cibo
(lC = 0.2 mAde, VCE = 5.0 Vde, RS = 1.0 kG,
f = 1.0 kHz, BW = 200 Hz)
NF
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-18
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAde
Symbol
Max
Unit
PD
225
mW
1.B
mWf'C
ROJA
556
'C/mW
PD
300
mW
2.4
mWf'C
ROJA
417
'C/mW
TJ, Tstll
150
'c
Rating
Collector Current -
Continuous
BCW69
BCW70
CASE 318-02/03, STYLE 6
SOT-23ITO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
~
3 Collector
,~' ~.~
25'C
2 Eminer
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 ~ 1.0 x 0.75 x 0.62 In.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GENERAL PURPOSE TRANSISTOR
PNP SILICON
DEVICE MARKING
BCW69
~
Hl; BCW70
~
H2
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS (TA
~ 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC ~ 2.0 mAde, IB ~ 0)
V(BR)CEO
45
-
Vdc
Collector-Emitter Breakdown Voltage
(lC ~ 100 pAde, VEB ~ 0)
V(BR)CES
50
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 10 pAdc, IC ~ 0)
V(BR)EBO
5.0
-
Vdc
-
-
100
10
120
215
260
500
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 20 Vdc, IE ~ 0)
(VCB ~ 20Vde, IE ~ 0, TA
ICBO
~
100'C)
nAdc
pAdc
ON CHARACTERISTICS
DC Current Gain
(lC ~ 2.0 mAde, VeE
hFE
~
BCW69
BCW70
5.0 Vdc)
-
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 0.5 mAde)
VCE(sat)
-
0.3
Vdc
Base-Emitter On Voltage
(lC ~ 2.0 mAde, VCE ~ 5.0 Vdc)
VBE(on)
0.6
0.75
Vdc
Cabo
-
7.0
pF
NF
-
10
dB
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(IE ~ 0, VCB ~ 10 Vdc, f
~
1.0 MHz)
Noise Figure
(lC ~ 0.2 mAde, VCE ~ 5.0 Vdc, RS
I ~ 1.0 kHz, BW ~ 200 Hz)
~
2.0 kil,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-19
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
45
Vdc
Collector-Base Voltage
VCBO
50
Vdc
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R/iJA
556
°C/mW
Po
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, Tsta
150
°c
Emitter-Base Voltage
Collector Current -
Continuous
BCW71
BCW72
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
II
Total Device Dissipation FR-5 Board, *
TA = 25°C
Derate above 25°C
3 Collector
Thermal Resistance Junction to Amb'ient
Total Device Dissipation
Alumina Substrate, ** T A
Derate above 25°C
=
,~' ~~
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
*FR-5 = 1.0 x 0.75 x 0.62 In.
•• Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GENERAL PURPOSE TRANSISTOR
DEVICE MARKING
NPN SILICON
I BCW71 = K1; BCW72 = AH
Refer to MPS3904 lor graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAdc, VEB = 0)
V(BR)CEO
45
Collector-Emitter Breakdown Voltage
(Ie = 2.0 mAde, VEB = 0)
V(BR)CES
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(Vee = 20 Vde, IE = 0)
(VCB = 20 Vde, Ie = 0, TA = 100°C)
-
Vdc
45
-
-
Vdc
V(BR)CBO
SO
-
-
Vdc
V(BR)EBO
5.0
-
-
Vdc
-
-
110
200
-
-
220
4S0
-
-
0.25
ICBO
-
-
100
10
nAdc
pAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 2.0 mAde, Vce = 5.0 Vde)
-
hFE
BCW71
BCW72
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAdc)
(lC = 50 mAde, IB = 2.S mAde)
VCE(sat)
-
0.21
-
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 2.5 mAde)
VBE(sat)
-
0.85
-
Base-Emitter On Voltage
(Ie = 2.0 mAde, VCE = 5.0 Vdc)
VBE(on)
0.6
-
fr
-
300
-
Output Capacitance
(IE = 0, VCE = 10 Vde, 1= 1.0 MHz)
Cobo
-
-
4.0
pF
Input Capacitance
(lC = 0, VEB = 0.5 Vde, f = 1.0 MHz)
Cibo
-
9.0
-
pF
NF
-
-
10
dB
Vde
0.75
Vdc
Vdc
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = S.O Vde, I = 35 MHz)
Noise Figure
(lc = 0.2 mAde, VCE = 5.0 Vde, RS = 2.0 kn,
1= 1.0 kHz, BW = 200 Hz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-20
MHz
MAXIMUM RATINGS
Value
Rating
Collector-Emitter Voltage
PNP
Symbol
BCX17
BCX19
BCX18
BCX20
Unit
VCEO
45
25
Vdc
Collector-Base Voltage
VCBO
50
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current -
Continuous
BCX17,18 BCX19,20
3 Collector
Max
Po
225
mW
1.8
mW/'C
R8JA
556
'C/mW
Po
300
mW
2.4
mWI'C
R8JA
417
'C/mW
TJ, Tstg
150
'c
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
Symbol
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
3 Collector
~~ "~()
THERMAL CHARACTERISTICS
Characteristic
NPN
Unit
2 Emitter
CASE 318-02103, STYLE 6
SOT-23 (TO-236AAlABI
GENERAL PURPOSE TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
BCX17
= T1;
BCX18
= T2;
BCX19
=
U1; BCX20
ELECTRICAL CHARACTERISTICS (TA
=
U2
= 25'C unless otherwise noted.)
symbol
Characteristic
Min
Typ
Max
45
25
-
-
50
30
-
-
-
-
100
5.0
nAdc
pAdc
10
pAde
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 10 pAde, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA
Vde
V(BR)CES
BCX17,19
BCX18,20
ICBO
=
Vdc
V(BR)CEO
BCX17,19
BCX18,20
150'C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mAde, VCE
(lC = 300 mAde, VCE
(lC = 500 mAde, VCE
-
hFE
=
=
=
Collector-Emitter Saturation Voltage
(IC = 500 mAde, IB = 50 mAde)
VCE(sat)
-
-
Base-Emitter On Voltage
(lC = 500 mAde, VCE = 1.0 Vde)
VBE(on)
-
-
100
70
1.0 Vde)
1.0 Vde)
1.0 Vdc)
40
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-21
600
-
0.62
Vde
1.2
Vdc
•
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
ReJA
556
'C/mW
Po
300
mW
2.4
mWI"C
ReJA
417
'C/mW
TJ, Tstg
150
°c
Collector Current -
Continuous
Unit
BCX70G,H,J,K
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
3 Collector
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 = 1.0 x 0.75 x 0.62 in.
"'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
,~' "'~
2 Emitter
GENERAL PURPOSE TRANSISTOR
DEVICE MARKING
NPN SILICON
I BCX70G = AG; BCX70H = AH; BCX70J = AJ; BCX70K = AK
Refer to MPS3904 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, IE = 0)
V(BR)CEO
45
-
Vde
Emitter-Base Breakdown Voltage
(IE = 1.0 !LAde, IC = 0)
V(BR)EBO
5.0
-
Vde
20
20
nAde
!LAde
20
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vde, TA = 150°C)
ICES
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
-
ON CHARACTERISTICS
DC Current Gain
(lC = 10 !LAde, VCE
hFE
= 5.0 Vde)
-
-
BCX70G
BCX70H
BCX70J
BCX70K
20
40
100
-
(lC
= 2.0 mAde, VCE = 5.0 Vde)
BCX70G
BCX70H
BCX70J
8CX70K
120
180
250
380
220
310
460
630
(lC
=
BCX70G
BCX70H
BCX70J
BCX70K
60
70
90
100
-
-
-
0.55
0.35
0.7
0.6
1.05
0.85
0.55
0.75
50 mAde, VCE
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(Ie = 50 mAde, IB = 1.25 mAde)
(Ie = 10 mAde, IB = 0.25 mAde)
VeE(sat)
Base-Emitter Saturation Voltage
(Ie = 50 mAde, IB = 1.25 mAde)
(Ie = 50 mAde, IB = 0.25 mAde)
VBE(sat)
Base-Emitter On Voltage
(Ie = 2.0 mAde, VeE = 5.0 Vde)
VBE(on)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-22
-
Vde
Vde
Vde
BCX70G,H,J,K
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
tr
125
-
MHz
-
4.5
pF
125
175
250
350
250
350
500
700
NF
-
6.0
dB
Turn-On Time
(lC = 10 mAde, IB1 = 1.0 mAde)
ton
-
150
ns
Turn-Off Time
(lB2 = 1.0 mAde, VBB = 3.6 Vde, R1 = R2 = 5.0 kn,
RL = 990 n)
toff
-
800
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAde, VCE = 5.0 Vdc, 1= 100 MHz)
Output Capacitance
(VCE = 10 Vdc, IC = 0, I = 1.0 MHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 5.0 Vde, I = 1.0 kHz)
Cabo
hie
BCX70G
BCX70H
BCX70J
BCX70K
Noise Figure
(lC = 0.2 mAde, VCE = 5.0 Vde, RS = 2.0 kO,
1= 1.0 kHz, BW = 200 Hzl
-
SWITCHING CHARACTERISTICS
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-23
II
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCBO
45
V
VEBO
5.0
V
IC
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°C/mW
Po
300
mW
Rating
Emitter-Base Voltage
Collector Current -
Continuous
BCX71G,J,K
CASE 31.8-02/03, STYLE 6
SOT-23 (TO-236AAlAB)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board!
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA
Derate above 25°C
=
3 Collector
,~' .:.~
25°C
2.4
mW/oC
ROJA
417
°C/mW
TJ, Tst9
150
°c
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2 Emitter
GENERAL PURPOSE TRANSISTOR
PNP SILICON
DEVICE MARKING
I BCX71G ~
~
BG; BCX71J
BJ; BCX71K
~
BK
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC ~ 2.0 mAde, IB ~ 0)
V(BR)CEO
45
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 1.0 "Ade, IC ~ 0)
V(BR)EBO
5.0
-
Vde
-
20
20
-
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE ~ 32 Vdc)
(VCE ~ 32 Vde, TA ~ 150°C)
ICES
-
nAdc
"Ade
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 "Adc, VCE ~ 5.0 Vde)
(lC
~
2.0 mAde, VCE
(lC
~
50 mAde, VCE
(lC
~
2.0 mAde, VCE
~
~
~
hFE
BCX71G
BCX71J
BCX71K
40
100
-
5.0 Vde)
BCX71G
BCX71J
BCX71K
120
250
380
220
460
630
1.0 Vde)
BCX71G
BCX71J
BCX71K
60
100
110
-
BCX71G
BCX71J
BCX71K
125
250
350
250
500
700
5.0 Vde, f
~
1.0 kHz)
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 0.25 mAdc)
(lC ~ 50 mAde, IB ~ 1.25 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 0.25 mAde)
(lC ~ 50 mAde, IB ~ 1.25 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC ~ 2.0 mAde, VCE ~ 5.0 Vde)
VBE(on)
Output Capacitance
(VCE ~ 10 Vde, IC
0, f
~
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-24
-
Vde
-
-
Cobo
~
-
0.25
0.55
Vde
0.6
0.68
0.85
1.05
0.6
0.75
Vdc
6.0
pF
-
BCX71G,J,K
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°e unless otherwise noted)
Characteristic
Noise Figure
(Ie = 0.2 mAde, VeE = 5.0 Vdc, RS
f = 1.0 kHz, BW = 200 Hz)
Symbol
Min
Max
Unit
NF
-
6.0
dB
ton
-
150
ns
toft
-
800
ns
= 2.0 kl1,
SWITCHING CHARACTERISTICS
Turn-On Time
(Ie = 10 mAde, IB1
=
1.0 mAde)
Turn-Oft Time
(lB2 = 1.0 mAde, VBB
RL = 990 (1)
= 3.6 Vde,
R1
=
R2
=
5.0 kl1,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-25
BFR30
BFR31
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
CASE 318-02/03, STYLE 10
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
Po
225
mW
1.8
mWI"C
ROJA
556
'C/mW
Po
300
mW
2.4
mWI"C
ROJA
417
'C/mW
TJ, TstQ
150
'C
Total Device Dissipation FR-5 Board"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,," TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Unit
2 Source
,~' o~-@
1 Drain
JFET
AMPLIFIER
*FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
I BFR30 = M1;
BFR31
=
M2
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
IGSS
-
0.2
nAdc
-
5.0
2.5
BFR30
BFR31
0.7
-
3.0
1.3
BFR30
BFR31
-
4.0
2.0
BFR30
BFR31
1.0
1.5
4.0
4.5
BFR30
BFR31
0.5
0.75
-
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 10 Vdc, VOS = 0)
Gate Source Cutoff Voltage
(10 = 0.5 nAdc, VOS = 10 Vdc)
VGS(off)
BFR30
BFR31
Gate Source Voltage
(10 = 1.0 mAde, VOS = 10 Vdc)
Vdc
Vdc
VGS
(10 = 50 !---)I70
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 1OOl'Ade)
Reverse
(VR =
(VR =
(VR =
Voltage Leakage Current
25 Vdc, TJ = 150°C)
70 Vde)
70 Vde, TJ = 150°C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAde)
(IF = 10 mAde)
(IF = 50 mAde)
(IF = 100 mAde)
VF
Reverse Recovery Time
(IF = IR = 10 mAde, VR = 5.0 Vde, IR(REC) = 1.0 mAde) (Figure 1)
trr
FIGURE 1 -
-
Vdc
/LAde
-
-
60
5.0
100
-
1.5
-
715
855
1100
1300
-
15
pF
mVde
ns
Recovery Time Equivalent Test Circuit
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 mAl
Notes: 1. A 2.0 kO variable resistor adjusted for a Forward Current (IF) of 10 mAo
2. Input pulse is adjusted so IR(peak) is equal to 10 mAo
3. Ip » trr
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-43
MAXIMUM RATINGS
Unit
Symbol
Value
Reverse Voltage
VR
50
Vde
Forward Current
IF
200
mAde
IFM(surae)
500
mAde
Rating
Peak Forward Surge Current
CASE 318-02103, STYLE 9
SOT-23 (TO-236AAlAB)
THERMAl- CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°C/mW
Po
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, Tstg
150
°c
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
MBAV74
= 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Anode
30---1.---+::4--0 :
Cathode
0
Anode
SWITCHING DIODE
DEVICE MARKING
I MBAV74
I
= JAX
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)
50
-
Vde
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR] = 5.0 /LAde)
Reverse Voltage Leakage Current
(VR = 50 Vde, TJ = 125°C)
(VR = 50 Vde)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 100 mAde)
VF
-
trr
-
Reverse Recovery Time
(IF = IR = 10 mAde, iR(REC)
=
-
1.0 mAde, measured at IR
=
1.0 mA, RL
=
1000)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-44
/LAde
100
0.1
2.0
pF
1.0
Vde
15
ns
MAXIMUM RATINGS
Symbol
Value
Reverse Voltage
VR
70
Vde
Forward Current
IF
100
mAde
IFM(surae)
500
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWfC
R6JA
556
°CfmW
PD
300
mW
2.4
mWfC
R6JA
417
°CfmW
r
TJ, Tsta
150
°C
Cathode/Anode
Rating
Peak Forward Surge Current
Unit
MBAV99
CASE 318·02/03, STYLE 11
SOT·23 (TO·236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
~
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
10
•
Cathode
Anode
25°C
'4
'4
02
3
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~. 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DUAL SERIES
SWITCHING DIODE
DEVICE MARKING
I MBAV99 ~ A7X
I
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)
70
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) ~ 100~)
Reverse
(VR ~
(VR ~
(VR ~
Voltage Leakage Current
25 Vde, TJ ~ 150°C)
70 Vde)
70 Vde, TJ ~ 150°C)
IR
Diode Capacitance
(VR ~ 0, f ~ 1.0 MHz)
CD
Forward Voltage
(IF ~ 1.0 mAde)
(IF ~ 10 mAde)
(IF ~ 50 mAde)
(IF ~ 100 mAde)
VF
Reverse Recovery Time
(IF ~ IR ~ 10 mAde, iR(REC) ~ 1.0 mAde) (Figure 1)
trr
FIGURE 1 -
820
-
Vdc
~de
-
30
2.5
50
1.5
pF
mVde
-
715
855
1100
1300
15
ns
Recovery Time Equivalent Test Circuit
n
IF
+10V
!-
!-
INPUT SIGNAL
(IF
Notes: 1. A 2.0 Idl variable resistor adjusted for a Forward Current (IF) of 10 rnA.
2. Input pulse is adjusted so IR(peak) is equal to 10 rnA.
3. tp. trr
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
3·45
OUTPUT PULSE
IR ~ 10 mA; measured
at iR(REC) ~ 1.0 mAl
~
MAXIMUM RATINGS
Symbol
Value
Reverse Voltage
Rating
VR
70
Vde
Forward Current
IF
200
mAde
IFM(surae)
200
mAde
Peak Forward Surge Current
Unit
MBAW56
CASE 318-02103, STYLE 12
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
Unit
PD
225
mW
1.8
mWfC
ROJA
556
'C/mW
Po
300
mW
2.4
mWfC
ROJA
417
'C/mW
TJ, Tsta
150
'C
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25'C
=
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Cathode
DUAL
SWITCHING DIODE
"FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MBAW56 = A1X
I
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)
70
-
-
30
2.5
50
-
-
715
855
1100
1300
-
15
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 !LAde)
Reverse Voltage Leakage Current
(VR = 25 Vde, TJ = 150'C)
(VR = 70 Vde)
(VR = 70 Vde, TJ = 150'C)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage
(IF = 1.0 mAde)
(IF = 10 mAde)
(IF = 50 mAde)
(IF = 100 mAde)
VF
Reverse Recovery Time
(IF = IR = 10 mAde, IR(REC) = 1.0 mAde) (Figure 1)
trr
FIGURE 1 -
Vde
/LAde
2.5
pF
mVde
ns
Recovery Time Equivalent Test Circuit
t_
IF
INPUT SIGNAL
Notes: 1. A 2.0 kO variable resistor adjusted for a Forward Current (IF) of 10 mAo
2. Input pulse Is adjusted so IR(peak) is equal to lOrnA.
3. tp oIrr
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-46
OUTPUT PULSE
(IF = IR = 10 rnA; measured
at iR(REC) = 1.0 rnA)
MMAD130
MMADII03
thru
MMADII07
MMADII09
•
CASE 7S1A-02
SO-14
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Steady-State Reverse Voltage
Symbol
Value
VRM
50
Unit
Vdc
VR
40
Vdc
rnA
IFM
500
Continuous Forward Current
IF
400
rnA
Power Dissipation
Derating Factor
PD
500
4.0
mW
mWrC
TA
-65 to +125
"C
Tst!:!
-65 to +150
"C
Peak Forward Current 25"C
Operating Temperature
Storage Temperature Range
MONOLITHIC
DIODE ARRAYS
ELECTRICAL CHARACTERISTICS (@ 25"C Free-Air Temperature)
Limit
Characteristic
Reverse Breakdown Voltage (1) (IR
=
10/LA)
= 40 V)
Static Forward Voltage (IF = 100 rnA)
(IF = 500 rnA) (2)
Peak Forward Voltage (3) (IF = 500 rnA)
Static Reverse Current (VR
Symbol
Min
V(BR)
50
-
-
0.1
/LA
-
1.1
1.5
Vdc
-
5.0
Vdc
IR
VF
VFM
Max
Unit
Vdc
SWITCHING CHARACTERISTICS (@J 25"C Free-Air Temperature)
-G
Characteristic
Forward Recovery Time (IF
= 500
rnA)
Reverse Recovery Time
(IF = 200 rnA, IRM = 200 rnA. Rl
=
100 fl, irr
=
Symbol
Typical Value
Unit
tfr
20
ns
trr
8.0
ns
20 rnA)
1. ThiS parameter must be measured using pulse techniques. PW = 100 /LS, duty cycle'" 20%.
2. This parameter is measured using pulse techniques. PW = 300 /LS, duty cycle'" 2.0%. Read time is 90 /LS from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle'" 2.0%, pulse rise time'" 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-47
MMAD130 Series
50-14 Pin Diagram
1.
Dual 10
Diode
Arrey
•
2.
16
Diode
Array
5.
MMAD130
JImmIE
MMAD1106
S Diode
Array
(Common
Anodel
8903414567
2
NC Pin 1,4,6, la, 13
6.
MMAD 11 03
'i'
MMAD1107
lmmL
DualS
Diode
Array
~ftttfff+
NC Pin 4, 6, la, 13
3.
DualS
Diode
Array
NC Pin 6,13
7.
MMAD11 04
JmmL
7
2
,
5
6
9 10
2
@111111Il
,
MMAD1109
7 Diode
Array
(lndependentl
8
NC Pin 4,11
4.
S Diode
Array
(Common
Cathodel
MMAD1105
@11111111
NC Pin 1,4,6, la, 13
1111111
Device
Description
MMAD130
MMADll03
MMADll04
MMADll05
Dual 10 Diode Array
16 Diode Array
Dual 8 Diode Array
8 Diode Array Common Cathode
8 Diode Array Common Anode
MMADll06
MMADll07
MMADll09
Dual 8 Diode Array
7 Diode Array
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-48
Diagram
1
2
3
4
5
6
7
MMADll08
CASE 7518-03
50-16
•
16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRM
50
Vdc
Steady-State Reverse Voltage
VR
40
Vdc
Peak Forward Current 25'C
Peak Reverse Voltage
IFM
500
mA
Continuous Forward Current
IF
400
mA
Power Dissipation
Derating Factor
Po
500
4.0
mW
mWI'C
Operating Temperature
Storage Temperature Range
TA
-65 to
TS!IL
-65 to
+ 125
+ 150
IIII!!!!
Pin Connections Diagram
MONOLITHIC
DIODE ARRAY
'C
'C
ELECTRICAL CHARACTERISTICS (@ 25'C Free-Air Temperaturel
Limit
Characteristic
Reverse Breakdown Voltage (11
(lR = 10 p.AI
Symbol
Min
Max
Unit
V(BRI
50
-
Vdc
-
0.1
p.A
-
1.1
1.5
Static Reverse Current
(VR = 40 VI
IR
Static Forward Voltage
(IF = 100 mAl
(IF = 500 mAl (21
VF
Peak Forward Voltage (31
(IF = 500 mAl
VFM
Vdc
-
5.0
Vdc
SWITCHING CHARACTERISTICS (@ 25'C Free-Air Temperaturel
Characteristic
Forward Recovery Time
(IF = 500 mAl
Reverse Recovery Time
(IF = 200 rnA, IRM = 200 mA, RL = 100
n, irr
Symbol
Typical Value
Unit
tfr
20
ns
trr
8.0
ns
= 20 mAl
1. This parameter must be measured uSing pulse techniques. PW = 100 p.s, duty cycle'" 20%.
2. This parameter is measured using pulse techniques. PW = 300 p.s, duty cycle'" 2.0%. Read time is 90 p.s from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle'" 2.0%, pulse rise time'" 10 ns. The total
capacitance shunting the diode is IS pF maximum and the equipment bandwidth is 80 MHz.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-49
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Symbol
Max
Unit
PD
225
mW
1.S
mWrC
R9JA
556
°C/mW
PD
300
mW
2.4
mWrC
R9JA
417
°C/mW
TJ, Tsta
150
°c
Collector Current - Continuous
MMBA811CS,6, 7,8
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AAlAB)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
3 Collector
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' '-~
2 Emitter
AMPLIFIER TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 m.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
MMBAS11C5
= C5;
MMBASllC6
= C6;
MMBASllC7
=
C7; MMBASllCS
= CS
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(Ie = 1.0 mAde)
V(BR)CEO
45
-
Vde
Collector-Base Breakdown Voltage
(Ie = 100 /'Ade)
V(BR)CBO
50
-
Vde
Emitter-Base Breakdown Voltage
(Ie = 10 /'Ade)
V(BR)EBO
5.0
-
Vde
Collector Cutoff Current
(VCB = 40 Vde)
'CBO
-
50
nAde
Emitter Cutoff Current
(YEB = 5.0 Vde)
'EBO
-
50
nAde
150
135
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(Ie = 0.1 mAde, VCE
lie = 0.5 mAde, VCE
(For Reference Only)
lie = 0.5 mAde, VCE
hFE
= 3.0 Vde)
= 3.0 Vde)
-
= 3.0 Vde)
MMBASllC5
MMBAS11C6
MMBASllC7
MMBASllCS
-
900
-
135
200
300
450
270
400
600
900
Collector-Emitter Saturation Voltage
(Ie = 20 mAde, 'B = 2.0 mAde)
VCE(sat)
-
0.3
Vde
Base-Emitter On Voltage
(Ie = 0.5 mAde, VeE = 3.0 Vde)
VBE(on)
0.5
0.65
Vde
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
lie = 1.0 mAde, VCE = 6.0 Vde, f
=
lOa MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-50
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
Po
225
mW
1.S
mW/oC
ReJA
556
°C/mW
Po
300
mW
2.4
mWrC
ReJA
417
°C/mW
TJ, Tstg
150
°c
Rating
Emitter-Base Voltage
Collector Current -
Continuous
MMBA812M3,4,S,6,7
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
~
3 Collector
,~' ~~
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
GENERAL PURPOSE TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
MMBAS12M3
MMBAS12M6
~
~
~
M3; MMBAS12M4
M6; MMBAS12M7
~
M4; MMBAS12M5
M7
ELECTRICAL CHARACTERISTICS (TA
~
M5;
Refer to 2N50B6 for graphs.
~ 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
0.1
pAdc
0.1
pAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 40 Vdc, IE ~ 0)
ICBO
Emitter Cutoff Current
(VEB ~ 5.0 Vdc, IC ~ 0)
lEBO
-
ON CHARACTERISTICS
DC Current Gain
(VCE ~ 6.0 Vdc, IC
-
hFE
~
1.0 mAdc)
MMBAS12M3
MMBAS12M4
MMBAS12M5
MMBAS12M6
MMBAS12M7
60
90
135
200
300
120
1S0
270
400
600
Collector-Emitter Saturation Voltage
(lc ~ 30 mAde, IB ~ 3.0 mAde)
VCE(sat)
-
0.5
Vde
Base-Emitter On Voltage
(VCE ~ 6.0 Vde, IC ~ 1.0 mAde)
VBE(on)
-
O.S
Vde
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-51
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°C/mW
Po
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, Tsto
150
°c
Rating
Collector Current -
Continuous
MMBC1009Fl
MMBC1009F3
CASE 318-02/03. STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
3 Collector
,~' ~()
2 Emitter
Alumina Substrate, '* T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
AMIFM RF AMPLIFIER
TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBC1009F1 = F1; MMBC1009F3 = F3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Min
Typ
Max
30
60
60
120
-
-
0.3
Vdc
IT
150
-
-
MHz
Cobo
-
2.0
-
pF
NF
-
2.5
-
dB
Symbol
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lc = 0.5 mAde, VCE
=
hFE
MMBC1009F1
MMBC1009F3
3.0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 1.0 mAde, VCE = 6.0 Vdc, f
Output Capacitance
(VCB = 6.0 V, IE = 0, f
Noise Figure
(lc = 0.5 mAde, VCE
=
=
100 MHz)
1.0 MHz)
= 6.0 Vde, f =
1.0 MHz, RG
= 500 m
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
3-52
MAXIMUM RATINGS
Symbol
Value
Unit
Colleetor-Emitter Voltage
VCEO
25
Vdc
Colleetor-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
10
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
300
°C/mW
2.4
mWrC
R6JA
417
°C/mW
TJ, Tstll
150
°c
Rating
Collector Current -
Continuous
MMBC1321Q3
thru
MMBC1321Q5
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Po
Total Device Dissipation
Alumina Substrate."' TA
Derate above 25°C
~
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
.
,~' ~
mW
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
~
2 Emitter
VHF/RF AMPLIFIER TRANSISTOR
NPNSILICON
DEVICE MARKING
MMBC132103
•
3 Collector
03; MMBC132104
~
04; MMBC1321Q5
~
05
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Colleetor Cutoff Current
(VCB ~ 25 Vde, IE ~ 0)
ICBO
-
-
0.1
pAde
Emitter Cutoff Current
(VEB ~ 4.0 Vde, IC ~ 0)
lEBO
-
-
0.1
pAde
ON CHARACTERISTICS
DC Current Gain
(lC ~ 2.0 mAde, VCE
hFE
~
6.0 Vde)
MMBC1321Q3
MMBC1321Q4
MMBC1321Q5
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde, IB = 1.0 mAde)
60
90
135
-
-
-
120
180
270
-
-
0.6
Vde
600
-
-
MHz
Cobo
-
1.3
1.8
pF
NF
-
5.0
-
dB
VCE(sat)
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lC ~ 2.0 mAde, VCE = 6.0 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 6.0 Vdc, IE
~
0, f
Noise Figure
(VCE ~ 6.0 Vde, IE
~
2.0 mAdc, f
~
100 MHz)
=
900 MHz, RG
~
50 !l)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-53
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
35
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mW/"C
ROJA
556
°C/mW
Po
300
mW
2.4
mW/"C
R6JA
417
°C/mW
TJ, Tsta
150
°c
Collector Current -
Continuous
MMBC1622D6
MMBC1622D7
CASE 318·02/03, STYLE 6
SOT-23 (TO-236AAlABI
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
=
,~'
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
. ()
3 Collector
2 Emitter
AMPLIFIER TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBC1622D6
=
=
06; MMBC1622D7
07
ELECTRICAL CHARACTERISTICS (TA
Refer to MPS3904 for graphs.
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCB = 25 Vdc, IE = 0)
ICBO
-
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 0.1 mAde)
(VCE = 3.0 Vde, IC = 0.5 mAde)
hFE
All
MMBC1622D6
MMBC1622D7
Collector-Emitter Saturation Voltage
(lC = 100 mAdc, IB = 10 mAde)
VCE(sat)
Base-Emitter On Voltage
(VCE = 3.0 Vdc, IC = 0.5 mAde)
VBE(on)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 6.0 Vdc, IE = 1.0 mAde, f
=
100 Mhz)
MOTOR0Lt SM_ALL-SIGNAL SEMICONDUCTORS
3-54
-
-
150
200
300
400
600
-
0.3
Vde
0.65
Vde
0.55
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
RBJA
556
"C/mW
•
Po
300
mW
12
2.4
mWrC
ROJA
417
"C/mW
TJ, Tst!!
150
"C
Collector Current -
Continuous
MMBC1623L3,4,5,6,7
CASE 318·02/03, STYLE 6
SOT·23 (TO·236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board"
TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate.. ' TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
•
3 Collector
~
.3
B~~
2 Emitter
AMPLIFIER TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBC1623L3
MMBC1623L6
~
~
L3; MMBC1623L4
L6; MMBC1623L7
~
~
L4; MMBC1623L5
L7
~
L5;
Refer to MPS3904 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 40 Vdc, IE ~ 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VEB ~ 5.0 Vde, IC ~ 0)
lEBO
-
100
nAde
60
90
135
200
300
120
180
270
400
600
ON CHARACTERISTICS
DC Current Gain
(lC ~ 1.0 mAde, VCE
-
hFE
~
6.0 Vde)
MMBC1623L3
MMBC1623L4
MMBC1623L5
MMBC1623L6
MMBC1623L7
Collector-Emitter Saturation Voltage
(lC ~ 100 mAde, IB ~ 10 mAde)
VCE(sat)
-
0.3
Vde
Base-Emitter Saturation Voltage
(lC ~ 100 mA, IB ~ 10 mAde)
VBE(sat)
-
1.0
Vdc
Base-Emitter On Voltage
(lc ~ 1.0 mAde, VCE ~ 6.0 Vde)
VBE(on)
.60
0.7
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE ~ 6.0 Vdc, IE ~ 10 mAde, f
~
100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3·55
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
130
Vdc
Collector-Base Voltage
VCBO
150
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
Rating
Collector Current -
Continuous
MMBC1653N2,3,4
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
556
300
·C/mW
mW
12
2.4
mWrC
R9JA
417
·C/mW
TJ, TstQ
150
·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25·C
R9JA
PD
= 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
3t?\
•
B:'~
2 Emitter
HIGH VOLTAGE TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBC1653N2 = N2; MMBC1653N3 = N3; MMBC1653N4 = N4
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCB = 100 Vde, IE = 0)
ICBO
-
-
0.1
pAdc
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
-
0.1
pAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 15 mAde)
hFE
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
-
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(s.t)
-
for
Cobo
MMBC1653N2
MMBC1653N3
MMBC1653N4
50
100
150
130
220
330
-
0.5
Vdc
-
1.0
Vde
-
150
-
MHz
-
4.5
-
pF
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 10 Vdc, IF = 10 mAde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-56
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
160
Vdc
Collector-Base Voltage
VCBO
180
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
RIiJA
556
300
'C/mW
2.4
mWI'C
R8JA
417
'C/mW
TJ, Tst\!
150
'c
Collector Current -
Continuous
MMBC1654N5,6,7
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25'C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA = 25'C
Derate above 25'C
Po
•
,~' ~~'-
mW
2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
HIGH VOLTAGE TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBC1654N5
=
N5; MMBC1654N6
=
N6; MMBC1654N7
=
N7
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
0.1
!lAde
0.1
/lAde
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCB = 100 V, IE = 0)
'CBO
-
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
lEBO
-
-
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 V, IC
hFE
=
MMBC1654N5
MMBC1654N6
MMBC1654N7
15 mAde)
50
100
150
-
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
-
If
-
Cobo
-
130
220
330
-
0.5
Vdc
1.0
Vdc
150
-
MHz
4.5
-
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 10 Vdc, 'F = 10 mAde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-57
MMBD10l
MAXIMUM RATINGS
Rating
Reverse Voltage
CASE 318-02f03, STYLE 8
SOT-23 (TO-236AAfAB)
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
·C/mW
Po
300
mW
2.4
mWrC
R8JA
417
·C/mW
TJ, Tstll
150
·C
Total Device Dissipation FR-5 Board"
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Davice Dissipation
Alumina Substrate, ** TA = 25·C
Derate above 25·C
3 0--4'4""'-0 1
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Cathode
Anode
HOT-CARRIER
UHF MIXER DIODE
*FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBD10l = 4M
ELECTRICAL CHARACTERISTICS
(TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)
4.0
-
-
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(lR = 10 !lAde)
Reverse Voltage Leakage Current
(VR = 3.0 Vdc)
IR
Series Inductance
(f = 250 MHz)
LS
Case Capacitance
(f = 1.0 MHz)
Cc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
-
Forward Voltage
(IF = 10 mAde)
VF
Noise Figure
(f = 1.0 GHz)
NF
0.25
Vdc
!lAde
6.0
-
nH
0.18
-
pF
-
1.0
pF
-
-
0.60
Vdc
-
6.0
-
dB
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-58
-
MMBD201
MMBD301
MMBDSOI
MMBD701
MAXIMUM RATINGS
Rating
Reverse Voltage
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
ROJA
556
'ClmW
PD
300
mW
2.4
mWrC
ROJA
417
'ClmW
TJ, Tsta
150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
=
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AAlAB)
•
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
I~
30
*FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Cathode
0'
Anode
DEVICE MARKING
I MMBD201
HOT-CARRIER DIODE
= 4S; MMBD301 = 4T; MMBD501 = 5F; MMBD701 = 5H
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Min
Typ
Max
20
30
50
70
-
-
IR
-
-
200
/LAde
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
CT
-
-
1.0
pF
Forward Voltage
(IF = 10 mAde)
VF
-
-
1.2
Vdc
Characteristic
Symbol
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(lR = 10 !lAde)
V(BR)
MMBD201
MMBD301
MMBD501
MMBD701
Reverse Voltage Leakage Current
(VR = 25 Vdc)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-59
Vdc
-
MMBD352
MAXIMUM RATINGS
CASE 318-02/03 STYLE 11
SOT-23 (TO-236AA1AB)
Rating
Continuous ,Rev~rse Voltage
Anode
10 lOll
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
R8JA
556
"C/mW
Po
300
mW
2.4
mWFC
R8JA
417
"C/mW
TJ, TstR
150
"C
Total Device Dissipation FR-5 Board,*
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** T A = 25"C
Derate above 25"C .
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
!
lOll
Cathode
02
3
Cathode/Anode
MMBD353
CASE 318-02/03 STYLE 19
SOT-23 (TO-236AA/AB)
Anode
20
*FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
~I
I
Cathode
~I
01
3
Cathode/Anode
DUAL HOT CARRIER
MIXER DIODE
DEVICE MARKING
I MMBD352 ;" 5G; MMBD353 = 4F
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Max
Unit
-
0.60
V
-
0.25
10
Min
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAl
VF
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 4.0 V)
IR
Capacitance
(VR = 0 V, f
=
1.0 MHz)
C
,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-60
/LA
1.0
pF
MMBDS01, MMBD701
For Specifications,
See MMBD201 Data.
MMBD914X
MAXIMUM RATINGS
Rating
Value
Symbol
Unit
Reverse Voltage
VR
70
Vde
Forward Current
IF
200
mAde
'FM{§ur~e)
500
mAde
Symbol
Max
Unit
Po
225
mW
1.B
mWrC
ROJA
556
°C/mW
Po
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, TstQ
150
°C
Peak Forward Surge Current
CASE 318-02/03, STYLE 8
sOT-23 (TO-236AAlAB)
1~3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR·5 Board!
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate!' T A
Derate above 25°C
=
II
2
30
Cathode
14
01
Anode
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
HIGH-SPEED SWITCHING DIODE
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBD914X
=
50
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)
100
-
-
25
5.0
nAde
!LAde
4.0
pF
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(lR = 100 /LAde)
Vde
Reverse Voltage Leakage Current
(VR = 20 Vde)
(VR = 75 Vde)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
-
Forward Voltage
(IF = 1.0 mAde)
VF
-
1.0
Vde
Reverse Recovery Time
(IF = IR = 10 mAde) (Figure 1)
trr
-
15
ns
FIGURE 1 -
Recovery Time Equivalent Test Circuit
OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 mAl
Notes: 1. A 2.0 kO variable resistor adjusted for a Forward Current (IF) of lOrnA.
2. Input pulse is adjusted so IR(peak) is equal to lOrnA
3. tp» tr,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-61
MAXIMUM RATINGS
Rating
Reverse Voltage
'"
Symbol
Value
Unit
VR
75
35
Vdc
IF
100
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
R8JA
556
°C/mW
PD
300
mW
2.4
mWrC
R8JA
417
°C/mW
TJ, Tstg
150
°c
MMBD2836X
MMBD2835X
Forward Current
MMBD2835X
MMBD2836X
CASE 318-02/03, STYLE 12
SOT-23 (TO-236AAlAB)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25"(;
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA
=
25°C
Derate above 25°C
Thermal Resistance Junclion to Ambient
Junction and Storage Temperature
Cathode
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DUAL
SWITCHING DIODE
DEVICE MARKING
I MMBD2835X = A3X;
MMBD2836X
= A2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(lR = 100 !LAde)
Reverse Voltage Leakage Current
(VR = 30 Vde)
(VR = 50 Vde)
IR
MMBD2835X
MMBD2836X
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
Forward Voltage
(IF = 10 mAde)
(IF = 50 mAde)
(IF = 100 mAde)
VF
Reverse Recovery Time
(IF
=
IR
=
10 mAde, iR(REC)
Vdc
V(BR)
MMBD2835X
MMBD2836X
Irr
=
35
75
-
-
-
100
100
-
4.0
nAdc
pF
Vde
-
1.0
1.0
1.2
15
ns
1.0 mAde) (Figure 1)
FIGURE 1 -
Recovery Time Equivalent Test Circuit
INPUT SIGNAL
OUTPUT PULSE
(IF
Notes: 1. A 2.0 kO variable resistor adjusted for a Forward Current (IF) of lamA.
2. Input pulse is adjusted so IR(peak} is equal to lamA.
3. tp. trr
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-62
IR = lamA; measured
at iR(REC) = 1.0 mA}
=
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
Symbol
Value
Unit
VRM
75
Vdc
VR
30
50
Vdc
IFM
450
300
mAde
10
150
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
RaJA
556
°C/mW
Po
300
mW
2.4
mWrC
RaJA
417
°C/mW
TJ, Tstg
150
°c
MMBD2837X
MMBD2838X
Peak Forward Current
Average Rectified Current
MMBD2837X
MMBD2838X
CASE 318-02/03. STYLE 9
SOT-23 (TO-236AAfAB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,'* TA
Derate above 25°C
~
11
Anode
3cr-1
25°C
Cathode
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
:: ::
Anode
DUAL
SWITCHING DIODE
*FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBD2837X
~
A5X; MMBD2838X
~
A6X
ELECTRICAL CHARACTERISTICS (TA
~
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Aeverse Breakdown Voltage
(I(BR) ~ 100 ILAdc)
Reverse Voltage Leakage Current
(VA
(VA
~
~
Vde
V(BA)
MMBD2837X
MMBD2838X
IA
30 Vde)
50 Vdc)
MMBD2837X
MMBD2838X
Diode Capacitance
(VA ~ 0, f ~ 1.0 MHz)
CT
Forward Voltage
(IF ~ 10 mAde)
(IF ~ 50 mAde)
(IF ~ 100 mAde)
VF
Reverse Recovery Time
(IF ~ IR ~ 10 mAde, iA(AEC) ~ 1.0 mAde) (Figure 1)
trr
FIGURE 1 -
-
35
75
-
-
0.1
0.1
-
4.0
-
-
1.0
1.0
1.2
-
15
ILAdc
pF
Vde
ns
Recovery Time Equivalent Test Circuit
OUTPUT PULSE
INPUT SIGNAL
(IF
~
IR ~ 10 mA; measured
at iR(REC) ~ 1.0 mAl
Notes: 1. A 2.0 kfl variable resistor adjusted lor a Forward Currenl (IF) of 10 mAo
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp " trr
.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-63
MAXIMUM RATINGS
Rating
Unit
Symbol
Value
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAde
IFM(surge)
500
mAde
MMBD6050X
Symbol
Max
Unit
Po
225
mW
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AA/ABI
1.8
mWrC
R6JA
556
°C/mW
Po
300
mW
2.4
mWrC
R6JA
417
°C/mW
TJ, Tsto
150
°c
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,"
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 0>---+14+---0 1
Cathode
*FR-5 = 1.0 x 0.75 x 0.62 In.
""Alumina = 0.4 x 0.3 x.0.024 in. 99.5% alumina.
Anode
SWITCHING DIODE
DEVICE MARKING
I MMBD6050X = 5A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
-
Vde
-
0.1
!LAde
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 !LAde)
Reverse Voltage Leakage Current
(VR = 50Vde)
IR
Forward Voltage
(IF = 1.0 mAde)
(IF = 100 mAde)
VF
Reverse Recovery Time
(IF = IR = 10 mAde, iR(REC)
=
Vde
0.55
0.85
0.7
1.1
trr
-
15
ns
C
-
2.5
pF
1.0 mAde) (Figure 1)
Capacitance
(VR = 0)
FIGURE 1 -
Recovery Time Equivalent Test Circuit
IF
!!-
OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 rnA)
Notes: 1. A 2.0 kO variable resistor adjusted for a Forward Current (IF) of 10 rnA.
2. Input pulse is adjusted so IR(peak) is equal to 10 rnA.
3. tp. trr
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-64
MAXIMUM RATINGS
Symbol
Value
Reverse Voltage
Rating
VR
70
Vde
Forward Current
IF
200
mAde
IFM(surae)
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°C/mW
PD
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, TstQ
150
°c
Peak Forward Surge Current
Unit
MMBD6100
CASE 318-02/03, STYLE 9
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
~
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
II
Anode
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
::
::
30-1
Cathode
Anode
DUAL
SWITCHING DIODE
DEVICE MARKING
MMBD6100
~
5B
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)
70
-
Vde
Reverse Voltage Leakage Current
(VR ~ 50 Vde)
IR
-
0.1
!---1"'''1--_--........
td(on)
--I
f- -l
I-T -l
1 1
tr --l
1
TEST CIRCUIT
I
INPUT
-- -
I-I-i-- td(off)
-
VGS(off)
toff
1
, - 1 --t
I
=
VGS(on)
I
I
I
1
,--tf
-lo<'-::::::---_
10%
VOLTAGE WAVEFORMS
NOTES: 1. The input waveforms are supplied by a generator with the following characteristics:
Zout = 50 ohms, Duly Cycle = 2.0%
2. Waveforms are monitored on an oscilloscope with the following characteristics:
tr '" 0.75 ns, Rin '" 1.0 megohm, Cin '" 2.5 pF.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-71
11
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
VGSlr)
25
Vdc
IG
10
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mWI'C
R8JA
556
'C/mW
PD
300
mW
2.4
mWI'C
R8JA
417
'C/mW
TJ, Tst~
150
'C
Reverse Gate-Source Voltage
Gate Current
MMBF5457
CASE 318-02103, STYLE 10
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Source
,~' ~-@
1 Drain
JFET
GENERAL PURPOSE TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
I MMBF5457 = 6D
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characteristic
Max
Symbol
Min
Typ
V(BR)GSS
25
-
-
-
-
1.0
200
VGS(off)
0.5
-
6.0
Vdc
VGS
-
2.5
-
Vdc
-
5000
!£mhos
10
50
!£mhos
4.5
7.0
pF
1.5
3.0
pF
Unit
OFF CHARACTERISTICS
Gste-Source Breakdown Voltage
(IG = 10 "Adc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS
(VGS = 15 Vdc, VDS
= 0)
= 0, TA =
IGSS
100'C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Source Voltage
(VDS = 15 Vdc,ID
=
100 "Adc)
Vdc
nAdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain(l)
(VDS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance(l)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
IYfsl
Reverse Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f
IVrsl
Input Capacitance
(VDS = 15 Vdc, VGS
=
= 0, f =
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f
=
1.0 kHz)
Ciss
1.0 MHz)
Crss
1.0 MHz)
1000
-
(1) Pulse test: Pulse Width", 630 ms; Duty Cycle'" 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-72
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Reverse Gate-Source Voltage
Symbol
Value
Unit
VDG
25
Vde
VGs(r)
-25
Vde
IG
10
mAde
Gate Current
MMBF5459
CASE 318·02/03, STYLE 10
SOT·23 (TO·236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
R8JA
556
°C/mW
PD
300
mW
2.4
mWrC
R8JA
417
°C/mW
TJ, Tst!!
150
°c
Total Device Dissipation FR-5 Board,"
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25°C
~
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
JFET
TRANSISTOR
"FR-5 ~ 1.0 x 0.75 x 0.62 In.
""Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBF5459
~
11
2 Source
6L
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
25
-
Vdc
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ -10)LA, VDS ~ 0)
Gate 1 Leakage Current
(VGS ~ -15 V, VDS ~ 0)
IG1SS
-
1.0
nA
Gate 2 Leakage Current
(VGS ~ -15 V, VDS ~ 0, TA ~ 100°C)
IG2SS
-
200
nA
VGS(off)
2.0
8.0
Vdc
Forward Transfer Admittance
(VDS ~ 15 V, VGS ~ 0, f ~ 1.0 kHz)
IYfsl
2000
6000
ILmhos
Output Admittance
(VDS ~ 15 V, VGS
50
)Lmhos
0, f
~
IVosl
-
~
1.0 kHz)
Input Capacitance
(VDS ~ 15 V, VGS
Ciss
-
7.0
pF
~
0, f
~
1.0 MHz)
Crss
-
3.0
pF
Gate Source Cutoff Voltage
(VDS ~ 15 V, ID ~ 10 nA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VDS ~ 15 V, VGS ~ 0)
SMALL·SIGNAL CHARACTERISTICS
Reverse Transfer Capacitance
(VDS ~ 15 V, VGS ~ 0, f ~ 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3·73
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VOG
40
Vde
VGSR
40
Vde
IGF
10
mAde
Drain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
MMBF5460
CASE 318-02/03, STYLE 10
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R6JA
556
'C/mW
Po
300
mW
2.4
mWrC
R6JA
417
'C/mW
TJ, Tstg
150
·C
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA
Derate above 25'C
=
2 Source
,~' ~"-@
1 Dram
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
JFET
GENERAL PURPOSE
TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
"'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBF5460
=
P-CHANNEL
6E
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
40
-
-
-
5.0
1.0
nAdc
!-lAde
6.0
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 !-lAde, VOS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VOS = 0)
(VGS = 20 Vdc, VOS = 0, TA = 100'C)
IGSS
Vdc
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 1.0 !-lAde)
VGS(off)
0.75
-
Gate Source Voltage
(VOS = 15 Vdc, 10 = 0.1 mAde)
VGS
0.5
-
4.0
Vdc
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f = 1.0 kHz)
IYfsl
1000
-
4000
/Lmhos
Output Admittance
(VOS = 15 Vdc, VGS = 0, f = 1.0 kHz)
IYosl
-
-
75
/Lmhos
Input Capacitance
(VOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
-
5.0
7.0
pF
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
-
1.0
2.0
pF
en
-
20
-
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VOS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Equivalent Short-Circuit Input Noise Voltage
(VOS = 15 Vdc, VGS = 0, RG = 1.0 MO,
f = 100 Hz, BW = 1.0 Hz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-74
nV/v'RZ
MAXIMUM RATINGS
Rating
Orain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
Symbol
Value
Unit
VOG
25
Vdc
VGS(r)
25
Vdc
IG(I)
10
mAde
200
2.8
mW
mWrC
-65to +150
"C
Po
Continuous Device Dissipation at or Below
TC = 25"C
Linear Derating Factor
Storage Channel Temperature Range
MMBF5484
Tsta
CASE 318-02/03, STYLE 10
SOT-23ITO-236AA1ABI
2 Source
,~'
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1,8
mWrC
ROJA
556
"C/mW
Po
300
mW
2.4
mWrC
ROJA
417
"C/mW
TJ, Tsta
150
"C
Total Oevice Oissipation FR-5 Board,'
TA = 25"C
Oerate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Oerate above 25"C
=
1 Drain
JFET
TRANSISTOR
25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
C!'-@
N-CHANNEL
'FR-5 = 1.0 x 0.75 x 0.62 In.
<'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBF5484
=
6B
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-25
-
Vdc
-1.0
-0.2
!LA
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 !LA, VOS = 0)
Gate Reverse Current
(VGS = -20 V, VOS = 0)
(VGS = -20V, VOS = 0, TA = 100"C)
IGSS
Gate Source Cutoff Voltage
(VOS = 15 V, 10 = 10 nA)
-
nA
VGS(off)
-0.3
-3.0
Vdc
Forward Transler Admittance
(VOS = 15 V, VGS = 0, I = 1.0 kHz)
IYlsl
3000
6000
/kmhos
Output Admittance
(VOS = 15 V, VGS = 0, 1= 1.0 kHz)
IYosl
50
/kmhos
Input Capacitance
(VOS = 15 V, VGS = 0, I = 1.0 MHz)
Ciss
5.0
pF
Reverse Transler Capacitance
(VOS = 15 V, VGS = 0, 1= 1.0 MHz)
erss
1.0
pF
Output Capacitance
(VOS = 15 V, VGS = 0, 1= 1.0 MHz)
Coss
2.0
pF
ON CHARACTERISTICS
Zero-Gate-Voltage Orain
(VOS = 15 V, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
-
-
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 V, 10 = 1.0 rnA. YG' = 1.0 mmhos)
(RG = 1.0 kfl, 1= 100 MHz)
(VOS = 15 V, VGS = 0, YG' = 1.0 /kmho)
(RG = 1.0 Mfl, 1= 1.0 kHz)
NF
Common Source Power Gain
(VOS = 15 Vdc, 10 = 1.0 mAde, 1= 100 MHz)
Gps
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-75
dB
-
3.0
-
2.5
16
25
dB
•
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
Symbol
Value
VDG
25
Unit
Vdc
VGSlr)
25
Vdc
IG(f)
10
mAde
MMBF5486
CASE 318-02103, STYLE 10
SOT-23 (T0-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
•
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
R8JA
556
"C/mW
PD
300
mW
2.4
mWrC
R8JA
417
"C/mW
TJ, Tsto
150
"C
Total Device Dissipation FR-5 Board,"
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA
Derate above 25"C
=
2 Source
,~' ,~-EfP
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
1 Drain
JFET
TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.62 In.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBF5486 = 6H
ELECTRICAL CHARACTERISTICS ITA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
VIBR)GSS
-25
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
IVDS = 0, IG = -1.0 pAl
Gate 1 Leakage Current
IVGS = -20 V, VDS = 0)
IG1SS
-
-1.0
nA
Gate 2 Leakage Current
IVGS = -20 V, VDS = 0, TA = 100"C)
IG2SS
-
-0.2
pA
Gate Source Cutoff Voltage
(VDS = 15 V, ID = 10 nA)
VGS(off)
-2.0
-6.0
Vdc
IYlsl
4000
8000
/tmhos
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VGS = 0, VDS = 15 V)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VGS = 0, VDS = 15 V, 1= 1.0 kHz)
Re(Yis)
-
1000
/tmhos
IYosl
-
75
/tmhos
Output Conductance
(VGS = 0, VDS = 15 V, 1= 400 MHz)
Re(yos)
-
100
/tmhos
Forward Transconductance
(VGS = 0, VDS = 15 V, I = 400 MHz)
Re(Yls)
-
/tmhos
Input Capacitance
(VGS = 0, VDS = 15 V, 1= 1.0 MHz)
Cjss
-
5.0
pF
Reverse Transler Capacitance
(VGS = 0, VDS = 15 V, 1= 1.0 MHz)
erss
-
1.0
pF
Output Capacitance
(VGS = 0, VDS = 15 V, 1= 1.0 MHz)
Coss
-
2.0
pF
Input Admittance
(VGS = 0, VDS = 15 V, I = 400 MHz)
Output Admittance
(VGS = 0, VDS = 15 V, 1= 1.0 kHz)
3500
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 V, ID = 4.0 rnA, 1= 100 MHz, YG = 1.0 /tmhos)
(VDS = 15 V, ID = 4.0 rnA, RG = 1.0 kil, 1= 400 MHz, YG = 1.0 /tmhos)
(VGS = 0, VDS = 15 V, RG = 1.0 mil, 1= 1.0 kHz, YG = 1.0 /tmhos)
NF
Common Source Power Gain
(VDS = 15 V, ID = 4.0 rnA, I = 100 MHz)
(VDS = 15 V, ID = 4.0 rnA, 1= 400 MHz)
Gps
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-76
dB
-
2.0
4.0
2.5
18
10
30
20
dB
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
IG
10
mAde
Gate Current
MMBFJ310
CASE 318-02103, STYLE 10
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
R8JA
556
°C/mW
PD
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, Tstll
150
°c
Total Device Dissipation FR-5 Board, *
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25°C
= 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Source
,~' ~~
1 Drain
JFET
VHF/UHF AMPLIFIER
TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBFJ310 = 6T
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
-25
-
IGSS
--
-
Max
Unit
OFF CHARACTERISTICS
Gat....Source Breakdown Voltage
(IG = -1.0 ,..Adc, VDS = 0)
Gate Reverse Current
(VGS = -15V)
(VGS = -15 V, TA
=
125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vde, ID = 1.0 nAdc)
VGS(off)
-2.0
IDSS
24
VGS(f)
IYtsl
-
Vdc
-1.0
-1.0
nAdc
,..Adc
-6.5
Vde
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VDS = 10 Vde, VGS = 0)
Gate-Source Forward Voltage
(lG = 1.0 mAde, VDS = 0)
60
mAde
-
-
1.0
Vdc
8.0
-
18
mmhos
-
200
,.mhos
-
5.0
pF
-
2.5
pF
10
-
nVNHz
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 10 Vde, ID = 10 mAde, f
=
1.0 kHz)
Output Admittance
(VOS = 10 Vdc, 10
=
1.0 kHz)
=
10 mAde, f
Input Capacitance
(VGS = -10 Vde, VOS
IYosl
= 0 Vdc, f =
Reverse Transfer Capacitance
(VGS = -10 Vdc, VOS = 0 Vdc, f
=
Ciss
1.0 MHz)
Crss
1.0 MHz)
Equivalent Short-Circuit Input Noise Voltage
(VOS = 10 Vdc, 10 = 10 mAde, f = 100 Hz)
en
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-77
•
MAXIMUM RATINGS
Symbol
Value
Orain-Source Voltage
Rating
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
IG
10
mAde
Gate Current
Unit
MMBFU310
CASE 318-02/03, STYLE 10
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
•
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mW/oC
ROJA
556
°C/mW
Po
300
mW
2,4
mWrC
ROJA
417
°C/mW
TJ, Tsta
150
°c
Total Oevice Oissipation FR-5 Board,'
TA ~ 25°C
Oerate above 25°C
Thermal Resistance Junction to' Ambient
Total Oevice Oissipation
Alumina Substrate," TA
Oerate above 25°C
~
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
JFET
TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBFU310
~
6C
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Svmbol
Min
V(BR)GSS
-25
IG1SS
-
-150
pA
IG2SS
-
-150
nA
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ -1.0 pA, VOS ~ 0)
Gate 1 Leakage Current
(VGS ~ -15 V, VOS ~ 0)
Gate 2 Leakage Current
(VGS ~ -15 V, VOS ~ 0, TA
~
-
Vdc
125°C)
Gate Source Cutoff Voltage
(VOS ~ 10 V, 10 ~ 1.0 nA)
VGS(off)
-2.5
-6.0
Vdc
loSS
24
60
mA
VGS(f)
-
1.0
Vdc
IYfsl
10
18
mmhos
IVosl
-
150
/Lmhos
Ciss
-
5.0
pF
Crss
-
2.5
pF
ON CHARACTERISTICS
Zero-Gate-Voltage Orain
(VOS ~ 10 V, VGS ~ 0)
Gate-Source Forward Voltage
(lG ~ 10 mA, VOS ~ 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS ~ 10 V, 10 ~ 10 mA. f
~
1.0 kHz)
Output Admittance
(VOS = 10 V, 10 ~ 10 mA, f
~
1.0 kHz)
Input Capacitance
(VGS = -10 V, VOS
~
10 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VGS = -10 V, VOS ~ 10 V. f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-78
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
10
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
30
mA
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°C/mW
Po
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, Tstg
150
°c
Collector Current -
Continuous
MMBR536
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
~
•
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
HIGH FREQUENCY
TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSILICON
DEVICE MARKING
MMBR536
~
7R
ELECTRICAL CHARACTERISTICS (TC ~ 25°C
"For both package types unless otherwise noted.)
I
Characteristic
Symbol
I
Min
I
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (lc
Collector-Base Breakdown Voltage (lC
Emitter-Base Breakdown Voltage (IE
Collector Cutoff Current (VCB
~
~
~
~
2.0 mA, IB
100 !LA, IE
~
~
0)
10 ",A, IC
10 Vdc, IE
~
~
0)
0)
0)
V[BR)CEO
10
V(BR)CBO
15
V(BR)EBO
4.5
ICBO
-
-
10
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS
DC Current Gain (lC
~
20 mA, VCE
~
5.0 V)
~
1.0 GHz)
hFE
20
200
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(lC ~ 20 mAde, VCE ~ 5.0 Vdc, f
Collecto,-Base CapaCitance
(VCB ~ 5.0 Vdc, IF ~ 0, f
~
tr
-
5.5
-
GHz
Ccb
-
0.8
1.2
pF
-
14
8.0
-
1.0 MHz)
FUNCTIONAL TESTS
Gain @ Noise Figu,e
(lC ~ 10 mAde, VCE ~ 5.0 Vdc)
GNF
f
f
~
~
500 MHz
1.0GHz
~
10 mAde, VCE
-
NF
Noise Figure
(lC
dB
~
5.0 Vdc)
f
f
~
~
500 MHz
1.0 GHz
-
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-79
4.5
6.0
-
-
-
dB
MMBR536
5
0
r--....:.
0
........
I'--..
b-.-
5
6
•
l.-- ~
I
I
I I 15~111 I
vw-=-;)GAm.x ~ 15121 Ik :t
k;.1
-
........ b..,
...... r-0
...............
VCE ~ 5 V
f ~ 1 GHz
10
15
IC, COLLECTOR CURRENT ImAI
-
5
Ic~20mA
0.2
Figure 1. Current Gain-Bandwidth Product
versus Collector Current
0.5
f, FREQUENCY IGHzl
I I I I I I 12
I
_
521
GUm"x - 11 - 151112111 - 1522121 _
1'--...
..........,:: ~
-.....:: ~
5
0.3
Figure 2. Maximum Available Gain (GAmaxl
versus Frequency
25
20
I I I
0
25
20
t'--...
VCE ~ 5 V
GUmax
~~
15211 2
i'" ~
,.....",
~
VCE~~
IC 20mA_
~
'·l
~
o
0.2
0.5
f, FREQUENCY IGHzl
0.3
Figure 3. Maximum Unilateral Gain (GUmaxl
and Insertion Gain (1521121
versus Frequency
10
20
, ,
f
V
f
/'
o
o
V
--
~
500 MHz
f-"
6
f
~
1 GHz
,..-
I-"
16
-
f
1 GHz
f
500 MHz
2
VCE ~ 5 V
8
12
IC, COLLECTOR CURRENT ImAl
--
~
VCE ~ 5V
o
o
20
8
12
IC, COLLECTOR CURRENT ImAI
16
Figure 5. Noise Figure versus Collector Current
Figure 4. Gain at Noise Figure versus
Collector Current
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-80
20
MMBR536
i"..
I'\.. i'..
r--..
l"-
r--
o
o
-
--... .....
""'-
f = 1 MHz
-
,, ..
~
Cobo
Ccb
f
o
o
1
2
VBE. BASE·EMITIER VOLTAGE (Vdc)
Figure 6. Input Capacitance versus
Emitter-Base Voltage
2
= 1 MHz
10
4
6
VCS. COLLECTOR·BASE VOLTAGE (Vdc)
Figure 7. Output Capacitance versus
Collector-Base Voltage
INPUT/OUTPUT REFLECTION COEFFICIENTS
versus
FREQUENCY
VCE = 10 V. IC = 10 rnA
FORWARD AND REVERSE TRANSMISSION COEFFICIENTS
versus
FREQUENCY
VCE = 10 V. IC = 10 rnA
+90'
_90'
-j50
COMMON EMITTER S-PARAMETERS
IC
VCE
(Volts)
{mAl
10
5
f
(MHz)
511
512
521
522
15 111
Lt/J
15 211
Lt/J
15 121
Lt/J
200
500
1000
1500
2000
0.60
0.37
0.27
0.24
0.22
-44
-70
-105
-138
-166
6.47
3.57
2.16
1.62
1.38
126
97
74
58
44
0.07
0.14
0.22
0.29
0.33
10
200
500
1000
1500
2000
0.48
0.30
0.24
0.24
0.24
-54
-82
-122
-155
178
8.65
4.32
2.52
1.84
1.54
120
94
74
59
46
20
200
500
1000
1500
2000
0.39
0.25
0.24
0.24
0.26
-63
-94
-136
-167
168
10.10
4.77
2.72
1.96
'.63
115
91
73
58
46
-35
-50
-69
-87
-103
0.06
0.12
0.20
0.27
0.32
66
62
57
51
47
0.58
0.38
0.32
0.30
0.28
-40
-58
-78
-96
-112
0.06
0.11
0.19
0.26
0.32
67
65
60
54
50
0:49
0.32
0.27
0.26
0.25
-50
-65
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-81
Lt/J
66
60
53
46
42
15 221
0.68
0.48
0.40
0.37
0.34
-84
-102
-119
•
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
30
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mW/'C
R8JA
556
'C/mW
PD
300
mW
2.4
mWrC
R8JA
417
'C/mW
TJ, Tstg
150
'c
Collector Current -
Continuous
MMBR901
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,"
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25'C
~
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RF AMPLIFIER TRANSISTOR
"FR-5 ~ 1.0 x 0.75 x 0.62 in.
""Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBR901
~
7A
ELECTRICAL CHARACTERISTICS (TA
~ 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(IC ~ 1.0 mAde, IB ~ 0)
V(BR)CEO
15
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 0.1 mAde, IE ~ 0)
V(BR)CBO
25
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 0.1 mAde, IC ~ 0)
V(BR)EBO
2.0
-
Vdc
ICBO
-
50
nAdc
Cobo
-
1.0
pF
Gpe (1)
16 (Typ)
-
dB
1.9 (Typ)
de
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(Vce ~ 15 Vde, IE ~ 0)
ON CHARACTERISTICS
DC Current Gain
(lC ~ 5.0 mAde, VCE
~
5.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(Vce ~ 10 Vde, IE
~
0, f
~
1.0 MHz)
Common-Emitter Amplifier Power Gain
(VCC ~ 6.0 Vde, IC ~ 5.0 mAde, f ~ 1.0 GHz)
Noise Figure
(lc ~ 5.0 mAde, VCE
NF(1)
~
6.0 Vde, f
~
1.0 GHz)
(1) Noise figure and power gain measured on the Ailteeh 7380
son system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-82
-
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
35
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
R8JA
556
"C/mW
Po
300
mW
2.4
mWI"C
R8JA
417
"C/mW
TJ, Tstg
150
"C
Collector Current - Continuous
MMBR920
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board, *
TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25"C
~
3 Collector
,~'
"-()
2 Emitter
25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RF AMPLIFIER/SWITCHING
TRANSISTOR
*FR-5 ~ 1.0 x 0.75 x 0.62 in.
**Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSILICON
DEVICE MARKING
MMBR920
~
7B
ELECTRICAL CHARACTERISTICS ITA ~ 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
IIc ~ 1.0 mAde, IB ~ 0)
VIBR)CEO
15
-
Collector-Base Breakdown Voltage
IIc ~ 0.1 mAde, IE ~ 0)
VIBR)CBO
20
Emitter-Base Breakdown Voltage
liE ~ 0.1 mAde, IC ~ 0)
VIBR)EBO
2.0
-
-
ICBO
-
-
50
nAde
t,-
-
4.5
-
GHz
-
1.0
pF
OFF CHARACTERISTICS
Collector Cutoff Current
IVCB ~ 10 Vde, IE ~ 0)
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
IIc ~ 14 mAde, VCE
~
10 Vdc)
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc ~ 14 mAde, VCE ~ 10 Vde, f ~ 0.5 GHz)
Collector-Base Capacitance
IVCB ~ 10 Vde, IE ~ 0, I
Noise Figure
IIc ~ 2.0 mAde, VCE
IIc ~ 2.0 mAde, VCE
Ceb
~
1.0 MHz)
NFll)
~
~
10 Vde, I
10 Vde, I
~
~
0.5 GHz)
1.0 GHz)
Common-Emitter Amplifier Power Gain
IIc ~ 2.0 mAde, VCE ~ 10 Vde, I ~ 0.5 GHz)
IIc ~ 2.0 mAde, VCE ~ 10 Vde, I ~ 1.0 GHz)
11) Noise ligure and power gain measured on the Ailteeh 7380 50
Gpell)
-
n system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-83
dB
2.4
3.0
-
15
10
-
dB
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
35
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°C/mW
Po
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, Tsto
150
°c
Rating.
Collector Current
~
Continuous
MMBR930
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,'* TA
Derate above 25°C
~
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
AMPLIFIER/SWITCHING
TRANSISTOR
*FR-5 ~ 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBR930
~
7C
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC ~ 1.0 mAdc, IB ~ 0)
V(BR)CEO
12
-
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 0.1 mAdc, IE ~ 0)
V(BR)CBO
15
-
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 0.1 mAde, IC ~ 0)
V(BR)EBO
3.0
-
-
Vdc
ICBO
-
-
50
nAde
Ccb
-
-
1.0
pF
-
1.9
2.5
-
-
11
8.0
-
Collector Cutoff Current
(VCB ~ 5.0 Vdc, IE ~ 0)
ON CHARACTERISTICS
DC Current Gain
(lC ~ 30 mAde, VCE
~
5.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB ~ 10 Vdc, IE ~ 0, f
Noise Figure
(lC ~ 2.0 mAde, VCE
(lC ~ 2.0 mAde, VCE
~
1.0 MHz)
NFll)
~
~
5.0 Vde, f
5.0 Vde, f
~
~
0.5 GHz)
1.0 GHz)
-
Gpe (l)
Common-Emitter Amplifier Power Gain
(lC ~ 2.0 mAde, VCE ~ 5.0 Vde, f ~ 0.5 GHz)
(lC ~ 2.0 mAdc, VCE ~ 5.0 Vdc, f ~ 0.5 GHz)
(1) Noise figure and power gain measured on the Ailtech 7380 50
-
n
system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-84
dB
dB
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
5.0
Vdc
Collector-Base Voltage
VCBO
10
Vdc
Emitter-Base Voltage
VEBO
2.0
Vdc
IC
5.0
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ReJA
556
·C/mW
Po
300
mW
2.4
mWrC
ReJA
417
·C/mW
TJ, Tsto
150
·C
Collector Current -
Continuous
MMBR931
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/ABI
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25·C
=
•
2 Emitter
25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RF AMPLIFIER TRANSISTOR
NPN SILICON
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBR931
= 70
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
(lC = 0.1 mAdc, IB = 0)
V(BR)CEO
5.0
-
-
Collector-Base Breakdown Voltage
(lC = 0.Q1 mAdc, IE = 0)
V(BR)CBO
10
-
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
2.0
-
-
ICBO
-
-
50
nAdc
Ccb
-
-
0.5
pF
NF(1)
-
4.3
-
dB
PG(1)
-
10
-
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 5.0 Vdc, IE = 0)
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 0.25 mAdc, VCE = 1.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 1.0 Vdc, IE = 0, f
=
1.0 MHz)
Noise Figure
(IE = 0.25 mAdc, VCE
=
1.0 Vdc, f
=
1.0 GHz)
Gate Power Dissipation
(IE = 0.25 mAde, VCE
=
1.0 Vde, f
=
1.0 GHz)
(1) NOise figure and power gain measured on the Allteeh 7380 50
n system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-85
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
14
Vde
VEBO
4.0
Vde
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
·C/mW
Po
300
mW
2.4
mWrC
ROJA
417
·C/mW
TJ, Tstll
150
·C
Emitter-Base Voltage
Collector Current -
Continuous
MMBR2060
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25·C
= 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'.' ~,~
3 Collector
2
2 Emitter
RF AMPLIFIER TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBR2060
=
7E
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
14
-
Vde
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
-
50
nAdc
Emitter Cutoff Current
(VEB = 4.0, IC = 0)
lEBO
-
100
!LAde
20
2.0
-
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE = 5.0 Vde)
(lC = 20 mAde, VCE = 10 Vde, f
hFE
=
500 MHz)
-
-
Collector-Emitter Saturation Voltage
(IC = 80 mAde, IB = 8.0 mAde)
VCE(sat)
-
0.38
Vde
Base-Emitter Saturation Voltage
(lc = 40 mAde, IB = 20 mAde)
VBE(sat)
-
0.98
Vde
fr
-
1.0
GHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 1.0 Vdc, f
=
100 MHz)
1.0
pF
Ceb
-
3.0
pF
NF(1)
-
3.5
dB
-
dB
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0)
Ceb
Emitter-Base Capacitance
(VEB = 0.5 Vdc, IC = 0)
Noise Figure
(VCE = 10 Vde, IE
=
1.5 mAde, f
=
450 MHz)
Gpe (1)
Common-Emitter Amplifier Power Gain
(VCE = 10 Vde, IE = 1.5 mAde, f = 450 Mhz)
(1) Noise figure and power gain measured on the Ailtech 7380 50
n system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-86
12.5
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
2.5
Vdc
IC
40
mAde
Symbol
Max
Unit
Po
225
mW
Collector Current - Continuous
MMBR2857
CASE 318-02103, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25°C
=
1.8
mW/oC
ReJA
~~R
°C/mW
Po
300
mW
2.4
mWfC
ReJA
417
°C/mW
TJ, Tsta
150
°c
•
3 Collector
,~' ~~
2 EmItter
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RF TRANSISTOR
NPNSILICON
*FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBR2857 = 7K
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(IC = 3.0 mAde, 'B = 0)
V(BR)CEO
15
-
Vdc
Collector-Base Breakdown Voltage
(lC = 1.0 !lAde, IE = 0)
V(BR)CBO
30
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
2.5
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
'CBO
-
0.05
!lAde
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE = 1.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 4.0 mAde, VCE = 10 Vde, f
Collector-Base Capacitance
(YCB = 10 Vde, IE = 0, f
=
=
t,-
1000
-
MHz
Ceb
-
1.0
pF
hfe
50
-
-
NF
-
4.5
dB
GPE
12.5
-
dB
100 MHz)
0.1 MHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 6.0 Vdc, f
Noise Figure
(lC = 1.5 mAde, VCE
=
=
6.0 Vdc, RS
1.0 kHz)
= 50 n, f = 450 MHz)
Common-Emitter Amplifier Power Gain
(lC = 1.5 mAde, VCE = 6.0 Vde, f = 450 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-87
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
30
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
ROJA
556
'C/mW
Po
300
mW
2.4
mWI"C
ROJA
417
'C/mW
TJ, Tstg
150
·C
Collector Current -
Continuous
MMBR4957
CASE 318-02103, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RF AMPLIFIER TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
MMBR4957 = 7F
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
30
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
30
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BRIEBO
3.0
-
Vdc
ICBO
-
0.1
pAde
-
MHz
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(lc = 2.0 mAde, VCE
= 10 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IE = 2.0 mAde, VCE = 10 Vde, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
=
t,.
=
Ceb
=
-
0.8
pF
1.0 MHz)
Common-Emitter Amplifier Power Gain(1)
(VCE = 10 Vde, IC = 2.0 mAde, f = 450 MHz)
Noise Figure(1)
(lC = 2.0 mAde, VCE
1,200
100 MHz)
10 Vdc, f
Gpe
17 (Typ)
-
dB
NF
-
3.0 (Typ)
dB
= 450 MHz)
(I) Noise figure and power gain measured on the Allteeh 7380 50
n system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-88
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
10
Vde
Collector-Base Voltage
VCBO
15
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
20
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
°C/mW
Po
556
300
2.4
mWrC
ROJA
417
°C/mW
TJ, Tsta
150
°c
Collector Current -
Continuous
MMBRS031
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AAlAB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'.' .() •
3 Collector
2
mW
2 Emitter
RF AMPLIFIER TRANSISTOR
NPNSILICON
'FR-5 = 1.0 x 0.75 x 0.62 m.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBR5031 = 7G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
10
-
Vde
Collector-Base Breakdown Voltage
(lC = 0.01 mAde, IE = 0)
V(BR)CBO
15
-
Vde
Emitter-Base Breakdown Voltage
(IE = 0.01 mAde, IC = 0)
VIBR)EBO
3.0
-
Vde
-
10
nAde
-
MHz
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 6.0 Vde, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE
=
6.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 6.0 Vdc, f
Collector-Base Capacitance
(VCE = 6.0 Vdc, IE = 0, f
=
=
IT
=
1.0 mAde, VCE
=
Ceb
-
1.5
pF
NFI1)
-
2.5
dB
14
25
dB
0.1 MHz)
Noise Figure
(lC
1,000
100 MHz)
6.0 Vdc, f
= 450
MHz)
Gpe (1)
Common-Emitter Amplifier Power Gain
(IC = 1.0 mAde, VCE = 6.0 Vde, f = 450 MHz)
(1) Noise figure and power gain measure on A.lteeh 7380 50
n system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-89
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
12
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
2.5
Vdc
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
RBJA
556
°C/mW
Po
300
mW
2.4
mWrC
R8JA
417
°C/mW
TJ, Tsta
150
°c
Collector Current - Continuous
MMBR5179
CASE 318-02/03, STYLE 6
SOT-23ITO-236AAlABI
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 = 1.0 x 0.75 x 0.62 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
'.' "~
3 Collector
2
2 Emitter
RF AMPLIFIER TRANSISTOR
NPN SILICON
DEVICE MARKING
MMBR5179 = 7H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lc = 3.0 mAde, IB = 0)
V(BR)CEO
12
Collector-Base Breakdown Voltage
(lc = 0.01 mAde, IE = 0)
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 0,01 mAde, IC = 0)
V(BR)EBO
2.5
-
ICBO
-
0.02
hFE
25
-
-
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
-
Vdc
Vdc
Vdc
!lAde
ON CHARACTERISTICS
DC Current Gain
(lc = 3.0 mAde, VCE
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = lQ mAde, IB = 1.0 mAde)
VCE(sat)
-
0.4
Vdc
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
1.0
Vdc
tr
900
-
MHz
Ccb
-
1.0
pF
hfe
25
-
-
NF(l)
-
4.5
dB
Gpe (l)
15
-
dB
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 5.0 mAde, VCE = 6.0 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
= 0.1
100 MHz)
to 1.0 MHz)
Small Signal Current Gain
(lC = 2.0 mAde, VCE = 6.0 Vdc, f
Noise Figure
(lc = 1.5 mAde, VCE
=
= 6.0 Vdc,
=
RS
1.0 kHz)
= 500, f = 200 Mhz)
Common-Emitter Amplifier Power Gain
(VCE = 6.0 Vde, IC = 5.0 mAde, f = 200 MHz)
(1) Noise figure and power gain measured on the Ailteeh 7380 50 0 system.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-90
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IF
510
mA
Peak Forward Gate Voltage
VGFM
5.0
V
Peak Forward Blocking Voltage
RG = 1.0 k
MMBS5060
MMBS5061
MMBS5062
VFXM
Forward Current Avg. (TC
= + 67°C)
MMBSS060
MMBSS061
MMBSS062
V
30
60
100
CASE 318-02/03, STYLE 14
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
R6JA
556
°C/mW
Po
300
mW
2.4
mWI"C
R6JA
417
°C/mW
TJ, Tstg
150
°c
Total Device Dissipation FR-5 Board,"
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Anode
Cathode
3 O---i~~I)o;:--O 1
2 Gate
SILICON CONTROLLED RECTIFIER
PNPN DEVICE
*FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBS5060 = 5R; MMBS5061 = 5S; MMBS5062 = 5T
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
30 V
60 V
100 V
VGNT
0.1
-
V
30V
60 V
100 V
IFXM
-
50
pA
30 V
60 V
100 V
IRXM
-
50
pA
OFF CHARACTERISTICS
Gate Trigger Voltage
(RL = 100 fi, RGC
TC = 125°C)
=
1.0 kn,
Anode Voltage
Peak Forward Blocking Current
(RGC = 1.0 kfi,
TC = 125°C)
VFXM
Peak Reverse Blocking Current
(RGC = 1.0 kfi,
TC = 125°C)
VRXM
MMBS5060 =
= MMBS5061 =
MMBS5062 =
MMBS5060 =
= MMBS5061 =
MMBS5062 =
MMBS5060 =
= MMBS5061 =
MMBS5062 =
Forward Voltage"
(IF = 1.2 A Peak)
Gate Trigger Current"'
(RGC = 1.0 kfi, VAC
= 7.0 V,
Gate Trigger Voltage
(RGC = 1.0 kfi, VAC
=
Holding Current
(VAC = 7.0 V, RGC
1.7
V
IGT
-
200
pA
VGT
-
0.8
V
IH
-
5.0
mA
VF
=
RL
=
100 fi
7.0 V, RL
=
100 fi
1.0 kfi
"PW .. 1.0 ms, D.C ... 1.0%.
""RGC current not included in measurement.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-91
•
MAXIMUM RATINGS
Value
Symbol
404
404A
Unit
Collector-Emitter Voltage
VCEO
24
35
Vdc
Collector-Base Voltage
VCBO
25
40
Vdc
Emitter-Base Voltage
VEBO
12
25
Rating
Collector Current -
•
Continuous
Vdc
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AAlABI
mAde
150
IC
MMBT404
MMBT404A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
R8JA
556
'C/mW
Po
300
mW
2.4
mWI"C
R6JA
417
'C/mW
TJ, TstA
150
·C
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
CHOPPER TRANSISTOR
PNP SILICON
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBT404 = 2M; MMBT404A = 2N
ELECTRICAL CHARACTERISTICS
(TA
= 25'C unless otherwise
noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
MMBT404
MMBT404A
Collector-Base Breakdown Voltage
(lC = 10 j. TA
Derate above 25°C
=
Unit
Symbol
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
GENERAL PURPOSE TRANSISTOR
PNP SILICON
'FR-5 = 1.0 x 0.75 x 0.62 m.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Refer to 2N4125 for graphs.
DEVICE MARKING
MMBT4125 = 20
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IE = 0)
V(BR)CEO
30
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CBO
30
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
4.0
-
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
-
50
nAdc
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
50
nAdc
hFE
50
25
150
Collector-Emitter Saturation Voltage(1)
(lC = SO mAde, IB = 5.0 mAde)
VCE(sat)
-
0.4
Vdc
Base-Emitter Saturation Voltage(1)
(lc = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.95
Vdc
fT
200
-
MHz
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain(1)
(lc = 2.0 mAde, VCE
(lC = 50 mAde, VCE
= 1.0 Vdc)
= 1.0 Vdc)
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Input Capacitance
(VBE = O.S Vdc, IC
10
pF
Ccb
-
4.5
pF
hfe
50
200
Ihfel
2.0
-
-
-
S.O
dB
Cibo
=
0, f
=
100 kHz)
Collector-Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f
=
100 kHz)
Small-Signal Current Gain
(lc = 2.0 mAde, VCE = 10 Vdc, f
Current Gain - High Frequency
(lC = 10 mAde, VCE = 20 Vdc, f
=
=
1.0 kHz)
100 MHz)
NF
Noise Figure
(lc = 100 !lAde, VCE = 5.0 Vdc, RS = 1.0 kohm,
Noise Bandwidth = 10 Hz to 15.7 kHz)
(1) Pulse Test: Pulse Width = 300 Jl.S, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-109
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
600
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
°C/mW
Po
300
mW
2.4
mWrC
R8JA
417
°C/mW
TJ, Tstg
150
°c
Rating
Collector Current -
Continuous
MMBT4401
CASE 318-02103, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
~
,~' ,~~-
25°C
2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
SWITCHING TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
>'Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBT4401
~
2X
Refer to 2N4401 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
40
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
6.0
-
Vdc
IBEV
-
0.1
ICEX
-
0.1
!lAde
!lAde
hFE
20
40
80
100
40
-
Max
Unit
OFF CHARACTERISTICS
(lC
Emitter-Base Breakdown Voltage
~
Base Cutoff Current (VCE
(IE
~
~
~
1.0 mAde, IB
0.1 mAde, IE
0.1 mAde, IC
35 Vdc, VEB
Collector Cutoff Current (VCE
~
(lC
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
~
~
~
~
0)
0)
a)
0.4 Vdc)
35 Vdc, VEB
~
0.4 Vdc)
ON CHARACTERISTICS(1)
DC Current Gain
(lc
(lc
(lc
(lc
(lc
~
(lC
(lC
~
(lc
(lc
~
~
~
~
~
0.1 mAde, VCE ~ 1.0 Vdc)
1.0 mAde, VCE ~ 1.0 Vde)
10 mAde, VCE ~ 1.0 Vdc)
150 mAde, VCE ~ 1.0 Vdc)
500 mAde, VCE ~ 2.0 Vdc)
-
300
-
15 mAde)
50 mAde)
VCE(sat)
-
15 mAde)
50 mAde)
VBE(sat)
0.75
IT
250
-
Ccb
-
6.5
pF
Ceb
-
30
pF
hie
1.0
15
k ohms
h re
0.1
8.0
X 10-4
hIe
40
500
-
hoe
1.0
30
"mhos
(VCC ~ 30 Vde, VEB ~ 2.0 Vdc,
IC ~ 150 mAde, IBI ~ 15 mAde)
td
-
15
ns
tr
20
ns
(VCC ~ 30 Vde, IC ~ 150 mAde,
IBI ~ IB2 ~ 15 mAde)
Is
-
225
ns
30
ns
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
~
~
150 mAde, IB
500 mAde, IB
~
150 mAde, IB
500 mAde, IB
~
~
~
-
0.4
0.75
Vdc
0.95
1.2
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 20 mAde, VCE ~ 10 Vdc, I ~ 100 MHz)
Collector-Base Capacitance
(VCB ~ 5.0 Vde, IE ~ 0, I
~
100 kHz)
Emitter-Base Capacitance
(VBE ~ 0.5 Vdc, IC ~ 0, I
~
100 kHz)
Input Impedance
(lC ~ 1.0 mAde, VCE
~
10 Vdc, I
~
1.0 kHz)
Voltage Feedback Ratio
(IC ~ 1.0 mAde, VCE
~
10 Vdc, I
~
1.0 kHz)
Small-Signal Current Gain
(lc ~ 1.0 mAde, VCE ~ 10 Vde, I
~
1.0 kHz)
Output Admittance
(lC ~ 1.0 mAde, VCE
~
1.0 kHz)
~
10 Vde, I
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
II
(1) Pulse Tesl: Pulse Width", 300 !'S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-110
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5_0
Vde
IC
600
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWFC
R8JA
556
°C/mW
PD
300
mW
2.4
mWFC
R8JA
417
°C/mW
TJ, Tsta
150
°c
Continuous
Collector Current -
MMBT4403
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperatu~e
•
,~' ~()'2 Emitter
SWITCHING TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
'"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
MMBT4403 = 2T
Refer to 2N4402 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CEO
40
-
Vde
V(BR)CBO
40
-
Vde
V(BR)EBO
5.0
-
Vde
IBEV
-
0.1
!lAde
(VCE = 35 Vde, VBE = 0.4 Vde)
ICEX
-
0.1
!lAde
DC Current Gain
(lC
(lc
(lc
(IC
(lC
hFE
30
60
100
100
20
300
-
-
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(IC = 500 mAde, IB = 50 mAde)
VCE(sat)
0.4
0.75
Vde
Base-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
0.95
1.3
Vde
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
(lC = 1.0 mAde, IB = 0)
(lC = 0.1 mAde, IE = 0)
(IE = 0.1 mAde, IC = 0)
(VCE = 35 Vde, VBE = 0.4 Vde)
Collector Cutoff Current
ON CHARACTERISTICS
=
=
=
=
=
0.1 mAde, VCE = 1.0 Vde)
1.0 mAde, VCE = 1.0 Vde)
10 mAde, VCE = 1.0 Vde)
150 mAde, VCE = 2.0 Vdej(1)
500 mAde, VCE = 2.0 Vdej(1)
0.75
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product (lC = 20 mAde, VCE = 10 Vde, I = 100 MHz)
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
(VCB = 10 Vde, IE = 0, I = 140 kHz)
(VBE = 0.5 Vde, IC = 0, I = 140 kHz)
(IC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Small-Signal Current Gain
Output Admittance
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
tr
200
-
MHz
Ceb
8.5
pF
Ceb
-
30
pF
hie
1.5k
15k
ohms
X 10-4
h re
0.1
8.0
hie
60
500
-
hoe
1.0
100
J,Lmhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vde, VBE = 2.0 Vde,
IC = 150 mAde, IB1 = 15 mAde)
I
ns
tr
-
15
I
20
ns
(VCC = 30 Vde, IC = 150 mAde,
IB1 = IB2 = 15 mAde)
!
ts
-
225
ns
I
tl
-
30
ns
td
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-111
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
I.S
mWrC
R9JA
556
°ClmW
Po
300
mW
2.4
mwrc
R8JA
417
°ClmW
TJ, Tstll
150
°c
Rating
Collector Current -
Continuous
MMBTS086
MMBTS087
CASE 318-02/03, STYLE 6
SOT-23ITO-236AA1AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
LOW NOISE TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
I MMBT50S6
= 2P; MMBT50S7 = 2Q
Refer to 2N50B6 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
50
-
Vde
Collector-Base Breakdown Voltage
(lc = 100 pAde, IE = 0)
V(BR)CBO
50
-
Vde
-
-
10
50
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
(VCB = 35 Vde, IE = 0)
ICBO
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 100 pAde, VCE
(lC
=
(lC
=
-
hFE
= 5.0 Vde)
MMBT5086
MMBT50S7
150
250
500
SOO
1.0 mAde, VCE
=
5.0 Vde)
MMBT50S6
MMBT50S7
150
250
-
10 mAde, VCE
= 5.0 Vde)
MMBT5086
MMBT50S7
150
250
-
-
Collector-Emitter Saturation Voltage
(Ie = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.3
Vde
Base-Emitter Saturation Voltage
(Ie = 10 mAde,lB = 1.0 mAde)
VBE(sat)
-
0.S5
Vde
IT
40
-
MHz
Cobo
-
4.0
pF
150
250
600
900
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(Ie = 500 pAde, VCE = 5.0 Vde, f
Output Capacitance
(VeB = 5.0 Vde, IE
= 0, f =
=
100 kHz)
Small-Signal Current Gain
(Ie = 1.0 mAde, VCE = 5.0 Vde, f
(Ie = 1.0 mAde, VCE = 5.0 Vde, f
hfe
=
=
Noise Figure
(Ie = 20 mAde, VCE = 5.0 Vde, RS
f = 10 Hz to 15.7 kHz)
(Ie
RS
20 MHz)
= 100 pAde, VeE = 5.0 Vde,
= 3.0 kO, f = 1.0 kHz)
1.0 kHz)
1.0 kHz)
MMBT50S6
MMBT50S7
NF
=
10 kO,
MMBT50S6
MMBT50S7
MMBT50S6
MMBT5087
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-112
dB
-
3.0
2.0
-
3.0
2.0
MAXIMUM RATINGS
Value
Symbol
MMBT5088
MMB15089
Unit
Collector-Emitter Voltage
VCEO
30
25
Vde
Collector-Base Voltage
VCBO
35
30
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
50
mAde
Rating
Collector Current -
Continuous
MMBT5088
MMBT5089
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mW/"C
ROJA
556
"C/mW
Po
300
mW
2.4
mW/"C
ROJA
417
"C/mW
TJ, Tstg
150
"C
Total Device Dissipation FR-5 Board,'
TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25"C
~
•
25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
LOW NOISE TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
I MMBT5088 ~ lQ; MMBT5089 ~ lR
Refer to MPSA 18 for graphs.
ELECTRICAL CHARACTERISTICS (TA
~ 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC ~ 1.0 mAde, IB ~ 0)
Collector-Base Breakdown Voltage
(lC ~ 100 pAde, IE ~ 0)
ICBO
MMBT5088
MMBT5089
~
-
35
30
-
-
50
50
Vde
-
lEBO
~
30
25
V(BR)CBO
MMBT5088
MMBT5089
Collector Cutoff Current
(VCB ~ 20 Vde, IE ~ 0)
(VCB ~ 15 Vde, IE ~ 0)
Emitter Cutoff Current
(VEB(off) ~ 3.0 Vde, IC
(VEB(off) ~ 4.5 Vde, IC
Vde
V(BR)CEO
MMBT5088
MMBT5089
MMBT5088
MMBT5089
0)
0)
-
nAde
nAde
-
50
100
300
400
900
1200
ON CHARACTERISTICS
DC Current Gain
(IC
~
100 pAde, VCE
~
5.0 Vde)
MMBT5088
MMBT5089
(lC
~
1.0 mAde, VCE
~
5.0 Vde)
MMBT5088
MMBT5089
350
450
(lC
~
10 mAde, VCE
5.0 Vde)
MMBT5088
MMBT5089
300
400
~
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
~
(lC
~
10 mAde, IB
10 mAde, IB
~
~
1.0 mAde)
1.0 mAde)
hFE
-
-
-
VCE(sat)
-
0.5
Vde
VBE(sat)
-
0.8
Vde
tr
50
-
MHz
Ceb
-
4.0
pF
Ceb
-
10
pF
350
450
1400
1800
-
3.0
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 500 pAde, VCE ~ 5.0 Vde, f
~
20 MHz)
Collector-Base Capacitance
(VCB ~ 5.0 Vde, IE ~ 0, f
~
100 kHz emitter guarded)
Emitter-Base Capacitance
(VBE ~ 0.5 Vde, IC ~ 0, I
~
100 kHz collector guarded)
Small Signal Current Gain
(lc ~ 1.0 mAde, VCE ~ 5.0 Vde, I
Noise Figure
(lC ~ 100 pAde, VCE
I ~ 10 Hz to 15.7 Hz)
hie
~
1.0 kHz)
MMBT5088
MMBT5089
NF
~
5.0 Vde, RS
~
dB
10 kn,
MMBT5088
MMBT5089
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-113
-
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
150
Vde
Collector-Base Voltage
VCBO
160
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°C/mW
Po
300
mW
2.4
mWrC
ROJA
417
°C/mW
TJ, Tstll
150
°c
Ratin!!
Collector Current -
Continuous
MMBT5401
CASE 318-02103, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
•
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ~~2 Emitter
HIGH VOLTAGE TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.62 in.
**Alumina
=
PNP SILICON
0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBT5401 = 2L
Refer to 2N5401 for !!raphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
150
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 ~de, IE = 0)
V(BR)CBO
160
-
Vde·
Emitter-Base Breakdown Voltage
(IE = 10 ~de, IC = 0)
V(BR)EBO
5.0
-
Vde
-
50
50
50
60
50
240
-
0.20
0.5
-
1.0
1.0
100
300
MHz
-
6.0
pF
hfe
40
200
-
NF
-
8.0
dB
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 100 Vde, IE = 0)
(VCB = 100 Vde, IE = 0, TA
ICBO
=
150°C)
nAde
~de
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
(lC = 50 mAde, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
=
0, f
=
Cobo
1.0 MHz)
Small Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f
=
Noise Figure
(lC = 200 ~de, VCE = 5.0 Vde, RS
f = 10 Hz to 15.7 kHz)
1.0 kHz)
=
10 ohms,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-114
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
140
Vde
Collector-Base Voltage
VCBO
160
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
600
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
ROJA
556
·C/mW
Po
300
mW
2.4
mWf'C
R8JA
417
·C/mW
TJ, Tsta
150
·C
Collector Current -
Continuous
MMBT5550
MMBT5551
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25·C
=
•
25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature.
HIGH VOLTAGE TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
I MMBT5550 = IF; MMBT5551 = Gl
ELECTRICAL CHARACTERISTICS
Refer to 2N5550 for graphs.
(TA
=
25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
=
=
V(BR)EBO
100·C)
100·C)
MMBT5550
MMBT5551
MMBT5550
MMBT5551
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
140
160
-
160
180
-
-
6.0
-
-
100
50
100
50
-
50
Vde
V(BR)CBO
ICBO
0)
0)
0, TA
0, TA
Vde
V(BR)CEO
lEBO
Vde
nAde
!lAde
nAdc
ON CHARACTERISnCS(2)
DC Current Gain
(lC = 1.0 mAde, VCE
hFE
=
5.0 Vde)
MMBT5550
MMBT5551
60
80
-
(lC
=
10 mAde, VCE
=
5.0 Vde)
MMBT5550
MMBT5551
60
80
250
250
(lC
=
50 mAde, VCE
=
5.0 Vde)
MMBT5550
MMBT5551
20
30
-
Both Types
-
0.15
MMBT5550
MMBT5551
-
0.25
0.20
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC
=
50 mAde, IB
=
VCE(sat)
5.0 mAde)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC
=
50 mAde, IB
=
VBE(sat)
Both Types
MMBT5550
MMBT5551
5.0 mAde)
(2) Pulse Test: Pulse Width
= 300 /
z
r-----...
...............
32
-""r---,.
28
~
u
;;t
«
u
24
~
16
§
S
12
1
1
....
z
tl'
""
:::>
u
~
~
~
ffi
::;;
....
6
0.5
'"d'"
0.3
2
1
0.6
..,,/
9
8 9 10
10
VR. REVERSE VOLTAGE VOLTS
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
11
12
13
14
1.04
V
VR
0
~
1.03
""
VR ~ 3Vdc
1.01 r--- f ~ 1 MHz
Ct=Cc+Cj
o
V
!:::
........
0
<5
./
~
t'-....
20
./
1.5
r--.
w
<>
<>
0.99
/'"
0.98
,/
..-
. . .V
--
./'
./
Q
S 0.97
-20
0
+20
+40 +60
+80 +100 +120+140
TA. AMBIENT TEMPERATURE lOCI
0.96
-75
-50
-25
0
+25
+50
+75
TA. AMBIENTTEMPERATURE (OCI
Figure 3. Leakage Current
Figure 4. Diode Capacitance
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-135
+100
+125
MAXIMUM RATINGS (Each Diode)
Rating
MMBV432L
Symbol
Value
Unit
Reverse Voltage
VR
14
Volts
Forward Current
IF
200
mA
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ReJA
556
°C/mW
Po
300
mW
2.4
mWrC
ReJA
417
°C/mW
TJ, Tstg
150
°c
CASE 318-02, STYLE 9
SOT-23 (TO-236AA)
THERMAL CHARACTERISTICS
Characteristic
•
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,'" TA
Derate above 25°C
~
Anode
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3cr-1
Cathode
DEVICE MARKING
~
Anode
DUAL
VOLTAGE-VARIABLE
CAPACITANCE DIODE
'FR-5 ~ 1.0 x 0.75 x 0.62 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBV432L
:: ::
4B
ELECTRICAL CHARACTERISTICS (TA
~
25°C unless otherwise noted.)
Characteristic
Reverse Breakdown Voltage
OR ~ 10/LAdc)
Symbol
Min
Typ
V(BR)R
14
-
-
Vdc
Max
Unit
Reverse Voltage Leakage Current
(VR ~ 9.0 Vdc)
IR
-
-
100
nAdc
Diode Capacitance
(VR ~ 2.0 Vdc, f
CT
43
-
48.1
pF
CR
1.5
-
2.0
-
a
75
100
-
-
~
1.0 MHz)
Capacitance Ratio C2/C8
(f ~ 1.0 MHz)
Figure of Merit'
(VR ~ 2.0 Vdc, f
'a ~
~
100 MHz)
1
2 ""'CTRS
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-136
MMBV432L
TYPICAL CHARACTERISTICS (Each Diode)
550
100
-- --
70
~
~ 50
r--
z
;:"
~
5
30
~
Q
0
20
450
L'"
~ 350
-
r-
~
~
/'
~
'"
5250
r-r-
/"
u:
d
S
./
150
50
10
2
1
10
5
o
/'
/"
4
10
6
VR, REVERSE VOLTAGE IVOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance lEach Diode)
Figure 2. Figure of Merit versus Voltage
2000
1.07
8
1000
~
::iii 1.04
~
oz
0
"-
VR~2V/
;:;; 1.02
i'
I
~
g 0.98
50
20
30
50
70 100
200
f, FREQUENCY (MHz)
t"
'\
0.98
300
~ ~TA
.---' /
,....-I'/"
-50
~
!!la
~
>
125°C
0.2
0.1
ll!
0.02
0.Q1
1=~TA
o
25°C
100
125
Figure 4. Diode Capacitance versus Temperature
0.5 ~ t=TA 75°C
r- 1--1
Ji: 0,05
-'
-25
25
50
75
TJ, JUNCTION TEMPERATURE (OC)
1
!z
V
~ 4V
,.,,/
-75
Figure 3, Figure of Merit versus Frequency
L
V
~ , - VR
u
0
20
10
TA ~ 25°C
f ~ 100 MHz -
/"
_r-
4
6
8
10
VR, REVERSE VOLTAGE (VOLTS)
12
14
Figure 5. Reverse Current versus Reverse Voltage
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-137
•
MMBV2101
thru
MMBV2109
MAXIMUM RATINGS
Rating
•
Symbol
Value
Reverse Voltage
VR
30
Unit
Vdc
Forward Current
IF
20
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
ROJA
556
'C/mW
Po
300
mW
2.4
mWI'C
ROJA
417
'C/mW
TJ, Tstg
150
'c
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AAlABj
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25'C
=
3 0>-----+14
.......- 0 1
Cathode
Anode
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
TUNING DIODE
"FR-5 = 1.0 x 0.75 x 0.62 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)
30
-
-
Vdc
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(lR = 10 !lAdc)
-
20
nAdc
LS
-
3.0
-
nH
Cc
-
0.15
-
pF
TCC
-
280
400
Reverse Voltage Leakage Current
(VR = 25 Vdc)
IR
Series Inductance
(f = 250 MHz, Lead Length = 1116")
Case Capacitance
(f = 1.0 MHz, Lead Length = 1/16")
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Device
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
of Merit
VR = 4.0Vdc
f = 50 MHz
Q, Figure
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
ppml"C
Marking
Min
Nom
Max
Typ
Min
Max
Top
MMBV-2101
MMBV-2102
MMBV-2103
MMBV2104
6.1
7.3
9.0
10.8
6.8
8.2
10
12
7.5
9.0
11
13.2
400
400
350
350
2.5
2.5
2.5
2.5
3.2
3.2
3.2
3.2
4G
4S
4H
4T
MMBV-2105
MMBV-2106
MMBV-2107
MMBV-2108
MMBV-2109
13.5
16.2
19.8
24.3
29.7
15
18
22
27
33
16.5
19.8
24.2
29.7
36.3
350
300
300
250
150
2.5
2.5
2.5
2.5
2.5
3.2
3.2
3.2
3.2
3.2
4U
4V
4W
4X
4J
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-138
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
ROJA
556
'C/mW
Po
300
mW
2.4
mWI"C
ROJA
417
'C/mW
TJ, Tsta
150
'C
Rating
MMBV3102
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AA/AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board, *
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25'C
~
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
•
3 O>--~11---+144---<0 1
Cathode
Anode
"FR-5 = 1.0 x 0.75 x 0.62 !n.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SILICON PIN
SWITCHING DIODE
DEVICE MARKING
MMBV3700 = 4R
ELECTRICAL CHARACTERISTICS ITA
= 25°C
unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(lR = 10/LA)
Symbol
Min
Typ
Max
Unit
VIBR)R
200
-
-
Volts
Diode Capacitance INoie 1)
IVR = 20 Vdc, f = 1.0 MHz)
CT
-
-
1.0
pF
Series Resistance IFigure 5)
(IF = 10 mAl
RS
-
0.4
1.0
Ohms
Reverse Leakage Currenl
IVR = 150 Vdc)
IR
-
-
0.1
/LA
Reverse Recovery Time
(IF = IR = 10 mAl
Irr
-
300
-
ns
NOTE:
1. CT is measured using a capacitance bridge IBoonton Electronics Model 75A or equivalent).
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-141
y
MMBV3700
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 SERIE.S RESISTANCE
FIGURE 2 - FORWARD VOLTAGE
BOO
1.4
700
TA; 25°C
~1.2
is
•
ii
1.0
z
~ 0.8
i1i
§.
!Z 500
'-
0.4
,;,
'" 0.2
o
o
2.0
~
----
~
; 0.6
~
TA; 25°C
.. 600
4.0
6.0
B 400
c
~ 300
~
~ 200
.:f.
100
B.O
10
12
0
14
--
07
FIGURE 3 - DIODE CAPACITANCE
1.0
FIGURE 4 - LEAKAGE CURRENT
10 0
0
VR
<
15 VOLTS
L
0
:e
0
1.
O.
8
~ O. 6
~ 0.4
0.9
VF. FORWARD VOLTAGE (VOLTS)
10
B. 0
6. 0
_ 4. 0
~_
V
~
/
O.B
IF. FORWARD CURRENT (rnA)
~ 2. 0
is
/
i
0
TA; 25°C
0
1\
4
./
./
1
4
:i
G
O. 2
./
00 1
000 4
000 1
O. 0
-10
-20
-30
-40
-50
-60
VR. REVERSE VOLTAGE (VOLTS)
-20
+20
+60
+100
+140
TA. AMBIENT TEMPERATURE 1°C)
FIGURE 5 - FORWARD SERIES RESISTANCE TEST METHOD
soon
10pF
Hi
2. Use a short length of wire to short the test CirCUit from point
"A" to "B" Then connect the power supply providing 10 rnA
of bias current to the test circuit.
3. Adjust the capacitance scale arm of the bridge and the "G"
zero control for a minimum null on the "null meter" The
null occurs at approximately 130 pF.
4. Replace the wire short with the device to be tested. Bias
the device to a forward conductance state of 10 mA.
5. Obtain a minimum null on the "null meter", with the capacitance and conductance scale adjustment arms.
6. Read conductance (G) direct from the scale. Now read the
capacitance value from the scale (=130 pF) and subtract
120 pF which yields capacitance (e). The forward reSistance
(RS) can now be calculated from.
o------jf-(- - -...
C!-------....>NII.-.- - - 0 +
Boonton
Model 33A or B
C::JOUT
Power SupplV
LOO~------------J[~---------------o
-=
For test fixture, leads should
All moosurements @ 100 MHz
be as short as possible
To measure series resistance, a 10 pF capacitor IS used to reduce
the forward capacitance of the circuit and to prevent shorting of
the external power supply through the bridge. The small signal
from the bridge is prevented from shorting through the power
supply by the SOO-ohm resistor. The resistance of the 10 pF capacitor can be considered negligible for this measurement.
1. The RF Admittance Bridge (Boonton 33A or B) must be initially balanced. with the test cirCUit connected to the bridge
test terminals. The conductance scale will be set at zero
and the capacitance scale will be set at 120 pF. as required
when using the 100 MHz test coil.
2.533 G
RS;~
Where:
G - In mlcromhos.
C-inpF.
Rs-in ohms
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-142
MMBZ5226B
thru
MMBZ5257B
CASE 318-02/03, STYLE 8
SOT-23 (TO-236AA1AB)
THERMAL CHARACTERISTICS
Characteristic
Svmbol
Max
Po
225
mW
1.8
mWf'C
ReJA
556
"C/mW
Po
300
mW
2.4
mWf'C
ReJA
417
"C/mW
TJ, Tsta
150
"C
Total Device Dissipation FR-5 Board,*
TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25"C
~
25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR-5
~
1.0
X
Unit
3 0>---}l1'I","""-0 1
Cathode
Anode
0.75 x 0.62 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ZENER DIODES
Pinout: 1-Anode, 2-NC, 3-Cathode (VF = 0_9 V Max @ IF = 10 mA for all types_)
Marking
IZT
mA
Zener
Voltage
VZJ:!o5%)
Nominal
ZZK
IZ = 0.25 mA
o Max
ZZT
IZ = IZT
@10"1"Mod
o Max
Max
IR
p.A
MMBZ5226B
MMBZ5227B
MMBZ5228B
MMBZ5229B
MMBZ5230B
8A
8B
8C
80
8E
20
20
20
20
20
3.3
3.6
3.9
4.3
4.7
1600
1700
1900
2000
1900
28
24
23
22
19
25
15
10
5.0
5.0
1.0
1.0
1.0
1.0
2.0
MMBZ5231B
MMBZ5232B
MMBZ5233B
MMBZ5234B
MMBZ5235B
8F
8G
8H
8J
BK
20
20
20
20
20
5.1
5.6
6.0
6.2
6.8
1600
1600
1600
1000
750
17
11
7.0
7.0
5.0
5.0
5.0
5.0
5.0
3.0
2.0
3.0
3.5
4.0
5.0
MMBZ5236B
MMBZ5237B
MMBZ5238B
MMBZ5239B
MMBZ5240B
8L
8M
8N
8P
80
20
20
20
20
20
7.5
8.2
8.7
9.1
10
500
500
600
600
600
6.0
8.0
8.0
10
17
3.0
3.0
3.0
3.0
3.0
6.0
6.5
6.5
7.0
B.O
MMBZ5241B
MMBZ5242B
MMBZ5243B
MMBZ5244B
MMBZ5245B
8R
8S
8T
8U
BV
20
20
9.5
9.0
B.5
11
12
13
14
15
600
600
600
600
600
22
30
13
15
16
2.0
1.0
0.5
0.1
0.1
8.4
9.1
9.9
10
11
MMBZ5246B
MMBZ5247B
MMBZ524BB
MMBZ5249B
MMBZ5250B
8W
BX
BY
8Z
81A
7.B
7.4
7.0
6.6
6.2
16
17
18
19
20
600
600
600
600
600
17
19
21
23
25
0.1
0.1
0.1
0.1
0.1
12
13
14
14
15
MMBZ5251B
MMBZ5252B
MMBZ5253B
MMBZ5254B
MMBZ5255B
B1B
81C
810
81E
81F
5.6
5.2
5.0
4.6
4.5
22
24
25
27
28
600
600
600
600
600
29
33
35
41
44
0.1
0.1
0.1
0.1
0.1
17
18
19
21
21
MMBZ5256B
MMBZ5257B
81G
81H
4.2
3.8
30
33
600
700
49
58
0.1
0.1
23
25
Test
Current
Device
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-143
@
VR
V
•
MMPQ2222
MMPQ2222A
CASE 7518-03
SO-16
MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
MMPQ2222 MMP02222A
Vde
75
Vde
VCEO
Collector-Base Voltage
VCB
60
Emitter-Base Voltage
VEB
5.0
Vde
IC
500
mAde
Collector Current -
Continuous
Total Power Dissipation Cd) TA
Derate above 25°C
~
25°C
Total Power Dissipation Cd) TC
Derate above 25°C
~
25°C
Operating and Storage Junction
ptN CONNECTIONS
DIAGRAM
Unit
40
30
Each
Transistor
Four
Transistors
Equal Power
Po
0.52
4.2
1.0
8.0
Watts
mW/"C
Po
0.8
6.4
2.4
19.2
Watts
mW/"C
QUAD
GENERAL-PURPOSE
TRANSISTOR
°c
NPN SILICON
TJ, Tstg
-55 to
+ 150
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
30
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC ~ 10 mAde, IB ~ 0)
MMPQ2222
MMP02222A
V(BR)CEO
Collector-Base Breakdown Voltage
(lC ~ 10 !lAde, IE ~ 0)
MMP02222
MMP02222A
V(BR)CBO
60
75
V(BR)EBO
5.0
40
Emitter-Base Breakdown Voltage
(lB ~ 10 !LAde, IC ~ 0)
Collector Cutoff Current
(VeB ~ 50 Vde, IE ~ 0)
(VeB ~ SO Vde, IE ~ 0)
MMP02222
MMP02222A
Emitter Cutoff Current
(VBE ~ 3.0 Vde, IC ~ 0)
MMP02222
MMP02222A
ICBO
lEBO
-
-
Vde
-
Vde
-
Vde
nAde
-
-
50
10
35
50
75
75
100
100
30
40
50
-
-
-
-
0.4
0.3
1.S
1.0
-
1.3
1.2
2.S
2.0
-
50
10
nAde
ON CHARACTERISTICS
De Current Gain(1)
(Ie = 100 !lA, VCE ~ 10 V)
(lc = 1.0 mA, VCE ~ 10 V)
(lc = 10 mA, VCE ~ 10 V)
(Ie
=
(lc
(lc
(lc
= 300 mA, VCE
hFE
MMP02222A
MMP02222A
MMP02222
MMP02222A
MMP02222
MMP02222A
MMP02222
MMP02222A
MMP02222A
150 mA. VCE ~ 10 V)
~ 10 V)
~ 500 mA, VCE ~ 10 V)
150 mA, VeE ~ 1.0 V)
=
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB ~ 15 mAde)
(lC
(lC
~
~
300 mAde, IB
500 mAde, IB
~
~
30 mAde)
50 mAde)
Base-Emitter Saturation Voltage(1)
(Ie ~ 150 mAde, 18 ~ 15 mAde)
(lC
(Ie
~
~
300 mAde, 18
500 mAde, 18
~
~
30 mAde)
50 mAde)
VCE(sat)
MMP02222
MMP02222A
MMP02222
MMP02222A
-
VBE(sat)
-
-
Vde
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-144
300
Vde
-
MMP02222
MMP02222A
MMP02222
MMP02222A
-
-
-
MMPQ2222, MMPQ2222A
I
ELECTRICAL CHARACTERISTICS (Continued)
Symbol
Min
Typ
tr
-
350
-
MHz
Cob
-
4.5
-
pF
Cib
-
17
-
pF
Turn-On Time
(VCC ~ 30 Vdc, VBE(off) ~ 0.5 Vdc, IC ~ 150 mAde, 'B1 ~ 15 mAde)
ton
-
25
-
ns
Turn-Off Time
(VCC ~ 30 Vdc, IC
toff
-
250
-
ns
Characteristic
Max
Unit
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lc ~ 20 mAde, VCE ~ 20 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc, 'E
Input Capacitance
(VBE ~ 0.5 Vdc, IC
~
~
0, f
0, f
~
~
100 kHz)
100 kHz)
SWITCHING CHARACTERISTICS
~
150 mAde, IS1
~
IS2
~
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle
15 mAde)
~
2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-145
•
MMPQ2369
CASE 751B-03
SO-16
MAXIMUM RATINGS
Rating
•
Symbol
Collector-Emitter Voltage
Value
Unit
VCEO
15
Vde
Collector-Base Voltage
VCB
40
Vde
Emitter-Base Voltage
VEB
4.5
Vde
IC
500
mAde
Collector Current -
Continuous
PIN CONNECTIONS
DIAGRAM
Four
Each
Transistors
Transistor
Equal Power
Total Power Dissipation @ TA
Derate above 25"C
~
25"C
Po
0.4
3.2
0.72
6.4
Watts
mWf'C
Total Power Dissipation @ TC
Derate above 25"C
~
25"C
Po
0.66
5.3
1.92
15.4
Watts
mWf'C
Operating and Storage Junction
- 55 to + 150
TJ, Tstg
QUAD SWITCHING
TRANSISTOR
"C
NPN SILICON
Temperature Range
ELECTRICAL CHARACTERISTICS (TA ~ 25"C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
15
-
-
Vde
Collector-Base Breakdown Voltage
(lc ~ 10 !lAde, IE ~ 0)
V(BR)CBO
40
-
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 10 !lAde, IC ~ 0)
V(BR)EBO
4.5
-
-
-
Vde
-
-
0.4
/LAde
!lAde
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 20 Vde, IE ~ 0)
ICBO
-
Emitter Cutoff Current
(VBE ~ 3.0 Vde, IC ~ 0)
lEBO
-
-
0.5
40
20
0.25
Vde
ON CHARACTERISTICS
-
DC Current Gain(l)
(lC ~ 10 mAde, VCE ~ 1.0 Vde)
(lc ~ 100 mAde, VCE ~ 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 1.0 mAde)
VCE(sat)
-
-
Base-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 1.0 mAde)
VBE(sat)
-
-
0.9
Vde
450
550
-
MHz
Cob
-
2.5
4.0
pF
Cib
-
3.0
5.0
pF
ton
-
9.0
-
ns
toff
-
15
-
ns
-
DYNAMIC CHARACTERISTICS
t-r
Current-Gain - Bandwidth Product
(lC ~ 10 mAde, VCE ~ 10 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 5.0 Vde, IE
~
0, f
~
140 kHz)
Input Capacitance
(VBE ~ 0.5 Vde, IC
~
0, f
~
140 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC ~ 3.0 Vde, VBE(off) ~ 1.5 Vde, IC ~ 10 mAde, IBl
~
Turn-Off Time
(VCC ~ 3.0 Vde, IC
1.5 mAde)
~
10 mAde, IBl
~
3.0 mAde, IB2
(1) Pulse Test: Pulse Width"" 300 /Ls, Duty Cycle
~
~
3.0 mAde)
2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-146
MMPQ2907
MMPQ2907A
CASE 7518-03
SO-16
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
MMP02907 MMPQZ907A
40
60
Unit
Collector-Base Voltage
VCB
60
Emitter-Base Voltage
VEB
5.0
Vde
IC
600
mAde
Collector Current -
Continuous
PIN CONNECTIONS
DLAGRAM
•
Vde
Vde
16
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation (w TA
Derate above 25°C
~
25°C
Po
0.52
4.2
1.0
8.0
Watts
mWI"C
Total Power Dissipation (iiJ TC
Derate above 25"C
~
25°C
Po
0.8
6.4
2.4
19.2
Watts
mWI"C
QUAD
GENERAL PURPOSE
TRANSISTOR
"C
PNP SILICON
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
-55to +150
~ 25"C unless otherwise noted.)
I
Symbol
Min
V(BR)CEO
40
60
-
-
Vde
-
Collector-Base Breakdown Voltage
(lc ~ 10 !JAde, IE ~ 0)
V(BR)CBO
60
-
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 10 "Ade, IC ~ 0)
V(BR)EBO
5.0
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC ~ 10 mAde, IB ~ 0)
Collector Cutoff Current
(VCB ~ 30 Vde, IE ~ 0)
(VCB ~ 50 Vde, IE ~ 0)
MMPQ2907
MMPQ2907A
ICBO
MMPQ2907
MMPQ2907A
Emitter Cutoff Current
(VCB ~ 3.0 Vde, IC ~ 0)
lEBO
-
-
-
-
-
-
50
10
-
-
50
75
100
75/100
100
30/50
50
-
-
Vde
nAde
nAde
ON CHARACTERISTICS
DC Current Gain(l)
(IC ~ 100 !JAde, VCE ~ 10 V)
(lc ~ 1.0 mAde, VCE ~ 10 V)
(lc ~ 10 mAde, VCE ~ 10 V)
(lc ~ 150 mAde, VCE ~ 10 V)
(lc ~ 300 mAde, VCE ~ 10 V)
(lc ~ 500 mAde, VCE ~ 10 V)
MMPQ2907A
MMP02907A
MMPQ2907/2907A
MMPQ2907/2907A
MMPQ2907/2907A
MMPQ2907/2907 A
Collector-Emitter Saturation Voltagell)
(IC ~ 150 mAde, IB ~ 15 mAde)
(IC ~ 300 mAde, IB ~ 30 mAde)
(lC ~ 500 mAde, IB ~ 50 mAde)
MMPQ2907
MMPQ2907
MMPQ2907A
Base-Emitter Saturation Voltagell)
(lC ~ 150 mAde, IB ~ 15 mAde)
(lC ~ 300 mAde, IB ~ 30 mAde)
(lc ~ 500 mAde, IB ~ 50 mAde)
-
hFE
VCElsat)
MMP02907
MMPQ2907
MMPQ2907A
300
-
-
-
-
0.4
1.6
1.6
-
-
-
1.3
2.6
2.6
Vde
Vde
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-147
-
-
VBE(sat)
-
MMPQ2907, MMPQ2907A
I
ELECTRICAL CHARACTERISTICS (Continued)
Characteristic
Symbol
I'
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
fT
-
350
-
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
-
6,0
-
pF
Input Capacitance
(VBE = 2.0 Vdc, IC = 0, f = 100 kHz)
Cib
-
20
-
pF
Turn-On Time
(VCC = 30 Vdc, IC = 150 mAde, IBl = 15 mAde)
ton
-
30
-
ns
Turn-Off Time
(VCC = 6.0 Vdc, IC = 150 mAde, IB1 = IB2 = 15 mAde)
toff
-
100
-
ns
Current-Gain - Bandwidth Product(l)
(lc = 50 mAde, VCE = 20 Vdc, f = 100 MHz)
•
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
MMPQ3467
CASE 7518-03
SO-16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vde
Vde
ptN CONNECTIONS
DIAGRAM
Collector-Emitter Voltage
Collector-Base Voltage
VCB
40
Emitter-Base Voltage
VEB
5.0
Vde
IC
1.0
mAde
Collector Current -
Continuous
•
Four
Each
Transistor
Transistors
Equal Power
Power Dissipation @TA
Derate above 25°C
=
25°C
PD
0.52
4.2
1.2
9.6
Watts
mWfC
Power Dissipation @TC
Derate above 25°C
=
25°C
PD
1.0
8.0
2.5
20
Watts
mWfC
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
=
-55to +150
QUAD
MEMORY DRIVER
TRANSISTOR
°c
PNP SILICON
25°C unless otherwise noted.)
I
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 !£Ade, IE = 0)
V(BR)CBO
40
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 !£Ade, IC = 0)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
-
-
-
Vde
-
-
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
-
200
nAde
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
-
200
nAdc
hFE
20
-
-
-
ON CHARACTERISTICS
DC Current Gain(1)
(lc = 500 mAde, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage( 1)
(lc = 500 mAde, IB = 50 mAde)
VCE(sat)
-
0.23
0.5
Vde
Base-Emitter Saturation Voltage(1)
(lC = 500 mAde, IS = 50 mAde)
VBE(sat)
-
0.9
1.2
Vde
t,.
-
190
-
MHz
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cob
-
10
-
pF
Input Capacitance
(VSE = 0.5 Vdc, IC
Cib
-
55
-
pF
Turn-On Time
(lC = 500 mAde, IS1 = 50 mAde)
!on
-
20
-
ns
Turn-Off Time
(lC = 500 mAde, IS1
toff
-
60
-
ns
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE = 10 Vdc, f = 100 MHz)
=
0, f = 100 kHz)
SWITCHING CHARACTERISTICS
=
IB2 = 50 mAde)
(1) Pulse Test: Pulse Width", 300 ILS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-149
MMPQ3725
MMPQ3725A
MAXIMUM RATINGS
Rating
Symbol
MMPQ3725 MMPQ3725A
Unit
Collector-Emitter Voltage
VCEO
40
50
Vdc
Collector-Emitter Voltage
VCES
60
70
Vdc
Emitter-Base Voltage
Collector Current -
VEB
5.0
Vdc
IC
1.0
Adc
Continuous
Operating and Storage Junction
Temperature Range
-55 to
TJ, Tstg
Power Dissipation @ TC
Derate above 25'C
~
~
25'C
25'C
Operating and Storage Junction
PIN CONNEcnoNS
DIAGRAM
'c
Transistor
Four
Transistors
Equal Power
Po
0.6
4.8
1.4
11.2
Watts
mW/'C
Po
1.0
8.0
2.5
2.0
Watts
mWI"C
QUAD
CORE DRIVER
TRANSISTOR
'c
NPN SILICON
Each
Total Power Dissipation @ TA
Derate above 25'C
+ 150
CASE 7518-03
SO-16
-55 to
TJ, Tstg
+ 150
Temperature Range
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
TVp
Max
Unit
OFF CHARACTERISTICS
-
Vdc
-
-
Vdc
-
-
-
-
0.5
35
40
25
30
75
80
45
50
200
-
Collector-Emitter Breakdown Voltage(l)
(lC ~ 10 mAde, IB ~ a)
MMPQ3725
MMPQ3725A
V(BR)CEO
40
50
Collector-Base Breakdown Voltage
(lC ~ 100 ",Adc, VBE ~ a)
MMPQ3725
MMPQ3725A
V(BR)CES
60
70
V(BR)EBO
5.0
Emitter-Base Breakdown Voltage
(IE ~ 10 ",Adc,IC ~ a)
Collector Cutoff Current
(VCB ~ 40 Vdc, IE ~ a)
ICBO
Vdc
",Adc
ON CHARACTERISTICS(1}
DC Current Gain
(lC ~ 100 mAde, VCE
(lc
~
500 mAde, VCE
-
hFE
~
1.0 Vdc)
~
2.0 Vdc)
MMPQ3725
MMPQ3725A
MMPQ3725
MMPQ3725A
-
-
Collector-Emitter Saturation Voltage
(lC ~ 500 mAde, IB ~ 50 mAde)
VCE(sat)
-
0.32
0.45
Vdc
Base-Emitter Saturation Voltage
(lC ~ 500 mAde, IB ~ 50 mAde)
VBE(sat)
0.8
0.9
1.0
Vdc
tr
-
-
275
250
-
MHz
Cob
-
5.1
-
pF
Cib
-
62
-
pF
Turn-On Time
(lC ~ 500 mAde, IBl .~ 50 mAde, VBE(off) ~ 3.8 Vdc)
ton
-
20
-
ns
Turn-Off Time
(lC ~ 500 mAde, IBl
toff
-
50
-
ns
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 50 mAde, VCE ~ 10 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc, IE
Input Capacitance
(VBE ~ 0.5 Vdc, IC
~
~
0, f
0, f
~
~
MMPQ3725
MMPQ3725A
100 kHz)
100 kHz)
SWITCHING CHARACTERISTICS
~
IB2
~
50 mAde)
(1) Pulse Test: Pulse Width", 300 "'s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-150
MMPQ3762
CASE 7518-03
SO-16
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
40
Vdc
Vdc
Collector-Base Voltage
VCB
40
Emitter-Base Voltage
VEB
5.0
Vdc
IC
1.5
mAde
Collector Current -
Continuous
Power Dissipation @ TA = 25'C
Derate above 25°C
Po
Power Dissipation @TC = 25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
= 25°C
Each
Transistor
Four
Transistors
Equal Power
0.6
4.8
1.4
11
mWrC
1.0
8.0
2.5
20
mWrC
Watts
Watts
-55to +150
PIN CONNECTIONS
DIAGRAM
•
QUAD
MEMORY DRIVER
TRANSISTOR
°c
PNP SILICON
unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(IC = 10 mAde, IB = 0)
V(BR)CEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lc = 10 !LAde, IE = 0)
V(BR)CBO
40
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
-
-
-
100
nAdc
100
nAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
-
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
-
35
30
20
70
65
35
-
0.3
0.6
0.55
0.9
-
0.9
1.0
1.25
1.4
fr
-
275
-
MHz
Cob
-
9.0
-
pF
Cib
-
55
-
pF
ton
-
25
-
ns
toff
-
60
-
ns
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 150 mAde, VCE = 1.0 Vdc)
(lC = 500 mAde, VCE = 2.0 Vdc)
(lC = 1.0 Adc, VCE = 2.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
(IC = 1.0 Adc, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 500 mAde, IB = 50 mAde)
(lc = 1.0 Adc, IB = 100 mAde)
VBE(sat)
-
-
-
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lC = 50 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VeE = 0.5 Vdc, IC
= 0, f =
100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vdc, IC
=
1.0 Adc, IB1
=
100 mAde, VBE(off)
Turn-Off Time
(VCC = 30 Vdc, IC
=
1.0 Adc, IB1
=
IB2
=
= 2.0 Vde)
100 mAde)
(1) Pulse Test: Pulse Width"" 300 !LS, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-151
MMPQ3904
CASE 7518-03
SO-16
MAXIMUM RATINGS
Rating
•
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
40
Vde
Collector-Base Voltage
VCB
60
Vde
Emitter-Base Voltage
VEB
6.0
Vde
IC
200
mAde
Collector Current -
Continuous
Each
Four
Transistors
Transistor
Equal Power
PIN CONNECTIONS
DIAGRAM
Total Power Dissipation @TA
Derate above 25"C
= 25"C
Po
0.4
3.2
0.72
6.4
Watts
mWrC
QUAD
Total Power Dissipation @ TC
Derate above 25"C
= 25"C
PD
0.66
5.3
1.92
15.4
Watts
mWrC
AMPLIFIER/SWITCH
TRANSISTOR
"C
NPN SILICON
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55to +150
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
I
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CBO
60
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
6.0
50
nAde
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
ICBO
-
-
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
lEBO
-
-
50
30
50
75
90
160
200
-
-
Vde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 0.1 mAde, VCE = 1.0 Vde)
(lC = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
hFE
-
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.1
0.2
Vde
Base-Emitter Saturation Voltage
(Ie = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
0.65
0.85
Vde
250
300
-
Cob
-
2.0
4.0
pF
Cib
-
4.0
8.0
pF
ton
-
37
toff
-
136
DYNAMIC CHARACTERISTICS
for
Current-Gain - Bandwidth Product
(Ie = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f
=
Input Capacitance
(VBE = 0.5 Vdc, IC
"",140 kHz)
= 0, f
MHz
140 kHz)
SWITCHING CHARACTERISTKIS
Turn-On Time
(lC = 10 Vdc, VBE(off)
= 0.5 Vdc, IB1
Turn-Off Time
(lC = 10 mAde, IB1 = 1]32
=
= 1.0 mAde)
1.0 mAde)
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-152
-
ns
ns
MMPQ3906
CASE 7518-03
SO-16
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
40
Vdc
Collector-Base Voltage
VCB
40
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
200
mAde
Collector Current -
Continuous
Each
Four
Transistors
Transistor
Equal Power
~
25'C
PD
0.4
3.2
0.72
6.4
Watts
mW/'C
Power Dissipation @ TC
Derate above 25'C
~
25'C
PD
0.66
5.3
1.92
15.4
Watts
mW/'C
TJ, Tstg
-55to +150
".,:
II
;
~
1
Power Dissipation @ TA
Derate above 25'C
Operating and Storage Junction
Temperature Range
PIN CONNECTIONS
DlAGRAM
QUAD
AMPLIFIER/SWITCH
TRANSISTOR
'c
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(1)
(lC ~ 1.0 mAde, IB ~ 0)
V(BR)CEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 10 pAdc, IE ~ 0)
V(BR)CBO
40
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 10 /LAde, IC ~ 0)
V(BR)EBO
5.0
-
-
Vdc
50
nAdc
nAdc
OFF CHARACTERISTICS
-
Collector Cutoff Current
(VCB ~ 30 Vdc, IE ~ 0)
ICBO
-
-
Emitter Cutoff Current
(VBE ~ 4.0 Vdc, IC ~ 0)
lEBO
-
-
50
40
60
75
160
180
200
-
ON CHARACTERISTICS(1)
DC Current Gain
(lC ~ 0.1 mAde, VCE ~ 1.0 Vdc)
(lc ~ 1.0 mAde, VCE ~ 1.0 Vdc)
(lc ~ 10 mAde, VCE ~ 1.0 Vdc)
hFE
-
Collector-E!"itter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
VCE(sat)
-
0.1
0.25
Vdc
Base-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
VBE(sat)
-
0.65
0.85
Vdc
fT
200
250
-
Cob
-
3.3
4.5
pF
Cib
-
4.8
10
pF
ton
-
43
-
ns
toff
-
155
-
ns
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 10 mAde, VCE ~ 20 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 5.0 Vdc, IE
~
0, f
~
140 kHz)
Input Capacitance
(VeE ~ 0.5 Vdc, IC
~
0, f
~
140 kHz)
MHz
SWITCHING CHARACTERISTICS
Turn-On Time'
(lc ~ 10 mAde, VBE(off) ~ 0.5 Vdc, IBl
Turn-Off Time
(lc ~ 10 mAde, IB1
~
1.0 mAde)
,,'
~
IB2
~
1.0 mAde)
(1) Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-153
MMPQ6700
CASE 7518-03
SO-16
MAXIMUM RATINGS
PIN CONNECTIONS
Rating
•
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
40
Vdc
Vdc
Collector-Base Voltage
VCB
40
Emitter-Base Voltage
VEB
5.0
Vdc
IC
200
mAde
Collector Current -
Continuous
DIAGRAM
Four
Total Power Dissipation @ TA = 25'C
Derate above 25'C
Po
Total Power Dissipation @ TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
Each
Transistors
Transistor
Equal Power
0.4
3.2
0.72
6.4
Watts
mWrC
0.66
5.3
1.92
15.4
Watts
mW/'C
TJ. Tstg
ELECTRICAL CHARACTERISTICS
-55to +150
QUAD
COMPLEMENTARY PAIR
TRANSISTORS
'C
PNP/NPN SILICON
(TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 I'Adc, IE = 0)
V(BR)CBO
40
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !
'"
'"
c
~
1.0
2.0 3.0
5.0 7.0 10
VR. REVERSE VOLTAGE IVOLTS)
70
"
"
en 1.0
~
"\
c
~
I I 5.0I
I
r-- -
<[
~
_ _ rJaEII..t)@IC/la= 10
0.8
"'
to
0.6
-
~ VaElon)@VCE
= S.O V
\
70
100
V
o. 2
7.0 10
20
30
50
IC. COLLECTOR CURRENT ImA)
......
o
>
,; 0.4
\
- T J = 250 C
3.0
"ON" VOLTAGES
-TJ = 2SoC
1.2
so
2.0
30
1.4
\.
3o
-
20
FIGURE 3 -
~C$
...15
i'
DC CURRENT GAIN
200
z
;;:
I"....
Ccb == Cob
iei liii
1. 0
300
1\
'"
/'
c-- f- VCEI ..t)@lc/ia 10
0
2.0
200
3.0
S.O
7.0
20
30
50 70
10
IC. COLLECTOR CURRENT ImA)
MOTOROl.A SMALL-SIGNAL SEMICONDUCTORS
4-14
100
200
2N869A, 2N4453
FIGURE 4 -
CURRENT-GAIN -
FIGURE 5 -
BANDWIDTH PRODUCT
10 0
-;:;200 0
I
~
r--
t;
VCE~15V
0
0
f~100MHz
TJ
=>
a
~
25°C
r--......
I"""'
<=>
if 1000
a
./
;: 700
z
~ 500
"- ~
0
w
'";::
./
a
:t=t;t:t±
VCC 2.0 V
ICIIB 10
(See Not .31
TJ = 25°C
."-
0
g
I
f-
/'
0
-' 7. 0
5. 0
I
"It, ~ ~B,EIOff),~ 3.0, y-.... .......
Z
iii
3. 0
~ 300
2. 0
'"'"=>
u
.c 2001.0
1.0
2.0
30
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (rnA)
FIGURE 6 -
50
1.0
100
fCllB
IBl
TJ
tf@VCC~2.0V
~
=
0
~5 0
10
IB2 (S.. Not. 3
25°C
tr
< 1.0 ns
Pulse Width
........
2.0
3.0
50
20
30
5.0 7.0 10
IC, COLLECTOR CURRENT ImAI
70
100
FIGURE 8 -
Vin
2N869A
ton. t r. td
2N4453
2N869A
toff. ts. tf
2N4453
(31 le/lB
100
To Sampling Scope
2.0 k
Zin~'OOkn
<1.0 ns
tr
SWITCHING TEST CIRCUIT VALUES
Volts
VBB
Volts
-7.0
IBl141
IB2141
mA
mA
30
1.5
-
91
30
1.5
-
62
30
1.5
1.5
91
30
1.5
1.5
RL
Vee
Volts
Ohms
3.0
2.0
62
-7.0
3.0
3.0
+6.0
-4.0
2.0
+6.0
-4.0
3.0
= 10. Switching isshown to reflect current
Ie
mA
industry practices.
Ie'"
Camper. the values shown in Figures 1 and 2 @
30 mA to the
typical values in the Electrical Characteristics table @ lell B = 20.
(4) lal
70
tOO
t"
7. 0
5.0
1.0
50
= 200 ns
Duty eyere .. 1.0%.
O.t /.IF
10
30
Vin
Zin = 50.n
-- 20
3. 0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT ImAI
FIGURE 7 - SWITCHING TIME
TEST CIRCUIT
..!.!.
30
r-.
I L 11
2.0
II
200
100 '
70
TURN-OFF TIME
30 0
!:\:
;::
TURN-ON TIME
= la2 = 3.0 mA iii> Ic/la = 10
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-15
II
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vde
Collector-Emitter Voltage
(RBE = 10 Ohms)
VCER
80
Vde
Collector-Base Voltage
VCBO
100
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
IC
1.0
Amp
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25"C
= 25"C
Po
0.5
2.86
Watt
mWf'C
Total Device Dissipation @ TC
TC
Derate above 25"C
=
=
Po
1.8
1.0
10.3
Watt
mW/"C
TJ, Tstg
-65 to +200
"C
25"C
100"C
Operating and Storage Junction
Temperature Range
2N910
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
II ":~""
3 Collector
'"
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RruC
97.4
"C/VII
Thermal Resistance, Junction to Ambient
RruA
350
"C/VII
NPN SILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
= 100 mAde, RBE .. 10 ohms)(l)
= 30 mAde, IB = 0)(1)
Collector-Base Breakdown Voltage (lC = 100 !LAde, IE = 0)
Emitter-Base Breakdown Voltage (IE = 100 ..,Ade, IC = 0)
Collector Cutoff Current (VCB = 75 Vde, IE = 0)
(VCB = 75 Vde, IE = 0, TA = 150"C)
Emitter Cutoff Current (VBE = 5.0 Vde, IC = 0)
-
Collector-Emitter Breakdown Voltage
(lC
VCE[(sus)
80
Collector-Emitter Sustaining Voltage
(lC
VCEO(susl
60
V(BR)CBO
100
-
V(BR)EBO
7.0
-
ICBO
-
0.025
15
!LAde
lEBO
-
0.025
!LAde
hFE
35
75
30
-
-
VCE(sat)
-
0.4
1.2
Vde
VBE(sat)
0.6
0.8
0.9
Vde
-
fr
60
-
MHz
15
Cibo
-
85
pF
hie
-
1800
Ohms
hib
20
4.0
30
8.0
Ohms
hrb
-
3.0
X 10- 4
hfe
76
200
hoe
-
100
..,mhos
0.5
1.0
..,mho
12
dB
Vde
Vde
Vde
Vde
ON CHARACTERISTICS
= 0.1 mAde, VCE = 10 Vde)
= 10 mAde, VCE = 10 Vde)
= 10 mAde, VCE = 10 Vde, TA = -55"C)
Collector-Emitter Saturation Voltage (lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
Base-Emitter Saturation Voltage (lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
DC Current Gain
(lC
(lC
(lC
-
SMALL-SIGNAL CHARACTERISTICS
= 50 mAde, VCE = 10 Vde, f = 20 MHz)
= 0, f = 100 kHz)
Input Capacitance (VBE = 0.5 Vde, IC = 0, f = 100 kHz)
Input Impedance (lc = 5.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
Input Impedance (lc = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
(lc = 5.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
Voltage Feedback Ratio (lC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
Small-Signal Current Gain (lc = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
Output Admittance (lC = 5.0 mAd 300 "'", Duty Cycle;> 1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-18
ohms
6000
2000
2.5
-
40
50
200
250
-
75
125
",mhos
",mho
300
ps
-
2N916
JAN AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Po
0_36
2.06
Watts
mWrC
Po
1.2
6.9
Watts
mW/oC
TJ, Tstg
-65 to +200
°c
Rating
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Unit
II
GENERAL PURPOSE
TRANSISTOR
NPNSILICON
Refer to 2N3946 for graphs,
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted_)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
= 30 mA, IB = 0)
= 01
Emitter-Base Breakdown Voltage (IE = 10 pA, IC = 01
Collector Cutoff Current (VCB = 30 V, IE = 0)
Collector Cutoff Current @ 150°C (VCB = 30 V, IE = 0)
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
(lC
(lC
=
10 pA, IE
VCEQlsu~
25
V(BR)CBO
45
-
V(BR)EBO
5.0
Vdc
ICBO
-
10
nAdc
ICBO
-
10
pAdc
50
15
200
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(1)
(lc = 10 mA. VCE
(lc = 10 mA. VCE
=
=
hFE
1.0 V)
1.0 V, -55°C)
-
-
Collector-Emitter Saturation Voltage
(lC = 10 rnA. IB = 1.0 rnA)
VCE(sat)
-
0.5
Vdc
Base-Emitter Saturation Voltage
(lC = 10 rnA. IB = 1.0 mAl
VBE(sat)
-
0.9
Vdc
Output Capacitance
(VCB = 5.0 V, IE = 0)
Cobo
-
6.0
pF
Input Capacitance
(VEB = 0.5 V, IC
Cibo
-
10
pF
-
-
6000
2000
ohms
ohms
40
50
200
250
3.0
-
-
75
125
/Lmho
/Lmho
-
300
ps
SMALL-SIGNAL CHARACTERISTICS
= 0)
Input Impedance, f = 1.0 kHz
(lC = 1.0 rnA, VCE = 5.0 V)
(lC = 5.0 rnA, VCE = 5.0 V)
Small-Signal Current Gain, f =
(lC = 1.0 rnA, VCE = 5.0 V)
(lc = 5.0 mA, VCE = 5.0 V)
hie
1.0 kHz
Magnitude 01 Forward Circuit Transler Ratio, Common-Emitter
(lC = 10 mA, VCE = 15 V)
Output Admittance, I
(lC = 1.0 rnA, VCE
(lc = 5.0 rnA, VCE
Ihlel
= 1.0 kHz
= 5.0 V)
= 5.0 V)
Collector Base Time Constant
(lC = 10 rnA, VCB = 10 V, I
-
hie
hoe
rb'C c
= 40 MHz)
(11 Pulse Test: Pulse W,dth", 300 /Ls, Duty Cycle'" 1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-19
-
2N918
JAN, JTX, JTXV AVAILABLE
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
MAXIMUM RATINGS
3 Collector
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
200
1.14
mW
mW;oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
300
1.71
mW
mW;oC
TJ, Tstg
-65 to +200
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS
(TA
=
2
d\4case
Bas~
1 Emitter
AMPLIFIER TRANSISTOR
NPN SILICON
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Sustaining Voltage
(lC = 3.0 mAde, IB = 0)
VCEO(sus)
15
-
Vde
Collector-Base Breakdown Voltage
(lC = 1.0 ,..Ade, IE = 0)
V(BR)CBO
30
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 ,..Ade, IC = 0)
V(BR)EBO
3.0
-
Vde
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
(VCB = 15 Vde, IE = 0, TA = 150°C)
ICBO
-
.010
1.0
,..Ade
,..Ade
ON CHARACTERISTICS
hFE
20
-
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
1.0
Vde
IT
600
-
MHz
-
1.7
3.0
DC Current Gain
(lC = 3.0 mAde, VCE = 1.0 Vde)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC = 4.0 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 140 kHz)
(VCB = 0, IE = 0, f = 140 kHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 140 kHz)
Cibo
-
NF
-
Amplifier Power Gain
(VCB = 12 Vde, IC = 6.0 mAde, f = 200 MHz)
Gpe
15
Power Output
(VCB = 15 Vdc, IC = B.O mAdc, I = 500 MHz)
Po
Collector Efficiency
(VCB = 15 Vdc, IC = 8.0 mAdc, f = 500 MHz)
'1
Noise Figure
(lC = 1.0 mAdc, VCE = 6.0 Vdc, RG = 400 Ohms, f = 60 MHz)
pF
2.0
pF
6.0
dB
!
FUNCTIONAL TEST
(1) IT is delined as the frequency at which Ihlel extrapolates to unity.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-20
30
-
mW
25
-
0/0
dB
2N930,A
JAN, JTX AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
3 Collector
Symbol
2N930
2N930A
Unit
Collector-Emitter Voltage
VCEO
45
60
Vde
Collector-Base Voltage
VCBO
45
60
Vde
Emitter-Base Voltage
VEBO
5.0
6.0
Vde
Rating
Collector Current
IC
30
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
0.5
3.33
W
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.8
12
Watt
mWrC
Operating and Storage Temperature
Temperature Range
TJ, Tstg
-65 to
+
175
~~
•
1 Emitter
AMPLIFIER TRANSISTOR
NPN SILICON
°c
Refer to 2N2481 for graphs.
ELECTRICAL CHARACTERISTICS ITA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage 11)
IIc = 10 mAde, IB = 0)
VIBR)CEO
45
Collector-Base Breakdown Voltage
IIc = 10 !LAde, IE = 0)
VIBR)CBO
80
-
5.0
6.0
-
-
2.0
-
10
2.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
liE = 10 !LAde, IC = 0)
VIBR)EBO
2N930
2N930A
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
ICEO
Collector Cutoff Current
IVCB = 45 Vde, IE = 0)
ICBO
2N930
2N930A
Collector Cutoff Current
IVCE = 45 Vde, VBE = 0)
(VCE
= 45 Vde, VBE = 0, TA =
ICES
2N930
2N930A
2N930
2N930A
170°C)
Emitter Cutoff Current
IVBE = 5.0 Vde, IC = 0)
lEBO
2N930
2N930A
-
-
Vde
Vde
Vde
nAde
nAde
10
2.0
nAde
10
2.0
!LAde
nAde
10
2.0
ON CHARACTERISTICS
DC Current Gain
IIc = 1.0 !LAde, VCE
hFE
=
5.0 Vde)
IIc
=
10 !LAde, VCE
=
5.0 Vde)
IIc
=
10 !LAde, VCE
=
5.0 Vde, TA
IIc
= 500 !LAde, VCE = 5.0 Vde)
IIc
=
10 mAde, VCE
= 5.0 Vde)
60
-
100
300
2N930
2N930A
20
30
-
2N930
2N930A
150
-
-
2N930
2N930A
-
600
600
2N930A
11)
= -
55°C)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-21
-
2N930,A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Characteristic
Collector-Emitter Saturation Voltage (1)
(lc = 10 mAde, IB = 0.5 mAde)
Symbol
VCE(sat)
2N930
2N930A
Base-Emitter Saturation Voltage (1)
(lc = 10 mAde, IB = 0.5 mAde)
Min
Max
-
1.0
0.5
0.7
0.9
30
45
-
Unit
Vde
Vdc
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 /LAde, VCE = 5.0 Vde, I = 30 MHz)
a
Output Capacitance
(VCB = 5.0 Vde, IE = 0, I = 1.0 MHz)
2N930
2N930A
tr
Cobo
2N930
2N930A
MHz
pF
-
-
8.0
6.0
Input Impedance
(IE = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
hib
25
32
ohms
Voltage Feedback Ratio
(IE = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
hrb
-
600
X 10-6
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vde, I = 1.0 kHz)
hIe
150
600
Output Admittance
(IE = 1.0 mAde, VCB = 5.0 Vdc, 1= 1.0 kHz)
hob
-
1.0
Itmhos
Noise Figure
(lC = 10 /LAde, VCE = 5.0 Vde,
RS = 10 k ohms, I = 10 Hz to 15.7 kHz)
NF
-
3.0
dB
(1) Pulse Test: Pulse Width", 300 its, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-22
-
2N956
For Specifications, See 2N718A Data.
MAXIMUM RATINGS
Rating
Symbol
2N113212N1132A
Unit
I
40
Vde
~50~
Vdc
I
60
Vdc
+--- 5.0 ----+
Vdc
Collector-Emitter Voltage
VCEO
35
Collector-Emitter Voltage
(RBE '" 10 Ohms)
VCER
Collector-Base Voltage
VCBO
50
Emitter-Base Voltage
VEBO
IC
<--600-
mA
Total Device Dissipation (jV TA
Derate above 25°C
=
25°C
Po
<--600~3.43~
mW
mWfC
Total Device Dissipation @! TC
Derate above 25°C
=
25°C
Po
+--- 2.0----+
<-- 11.43-->
Watts
mWfC
Po
+--1.0--+
Watts
TJ, Tstg
-65 to +200
°c
Collector Current -
Continuous
Total Device Dissipation @ TC = 100°C
2N1132A
Operating and Storage Junction
Temperature Range
2Nl132,A
JAN AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
,If! ":()'~"'
2
1
, Emitter
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
87.49
°CiW
Thermal Resistance, Junction to Ambient
ROJA
291.55
°CiW
Characteristic
PNPSILICON
Refer to 2N2904 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
40
35
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10mA)
2N1132A
2N1132
Collector-Base Breakdown Voltage
(lC = 100 /-LAde, IE = 0)
Vde
V(BR)CBO
2N1132
2N1132A
Emitter-Base Breakdown Voltage
(IE = 100 /-LAde, IC = 0)
(IE = 1.0 mA. IC = 0)
2N1132
2N1132A
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 50 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
(VCB = 45 Vde, IE = 0)
(VCB = 45 Vde, IE = 0, TA
2N1132
2N1132
2N1132
2N1132A
2N1132A
50
60
V(BR)EBO
5.0
5.0
ICBO
=
150°C)
=
150°C)
Collector Cutoff Current
(VCE = 50 V, RBE = '" 10 Ohms)
2N1132
2N1132A
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
(VBE = 2.0 Vde, IC = 0)
2N1132A
2N1132
ICER
lEBO
-
-
-
-
Vde
/-LAde
1.0
100
100
0.5
50
-
10
10
-
100
100
25
30
90
mA
mA
/-LAde
ON CHARACTERISTlCS(1)
DC Current Gain
(lC = 5.0 mAde, VCE = 10 Vde)
(lC = 150 mAde, VCE = 10 Vde)
-
hFE
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
1.5
Vde
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
1.3
Vde
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-23
•
2N1132,A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
t,-
60
-
MHz
-
45
30
-
80
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Sandwidth Product
(lC = 50 mAdc, VCE = 10 Vdc, I = 20 MHz)
•
Output Capacitance
(VCS = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCS = 10 Vdc, IE = 0, f = 1.0 MHz)
2N1132,
2N1132A
Input Capacitance
(VSE = 0.5 Vdc, IC = 0, I = 1.0 kHz)
(VSE = 0.5 Vdc, IC = 0, I = 1.0 MHz)
2N1132,
2N1132A
Cobo
Cibo
80
25
-
35
10
-
8.0
8.0
2N1132,
2Nl132A
25
25
100
75
2N1132,
2Nl132A
30
30
hib
Voltage Feedback Ratio
(lC = 5.0 mAdc, VCE = 5.0 Vdc, I = 1.0 kHz)
(lC = 5.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
hrb
(lC = 5.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
pF
-
Input Impedance
(Ie = 1.0 mAdc, VCS = 5.0 Vdc, I = 1.0 kHz
(Ie = 5.0 mAdc, VCS = 10 Vdc, I = 1.0 kHz
Small-Signal Current Gain
(lC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
pF
Ohms
X 10-4
hie
Output Admittance
(Ie = 1.0 mAdc, VCE = 5.0 Vdc, I = 1.0 kHz)
(Ie = 5.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
hob
-
SWITCHING CHARACTERISTICS
Turn-On Time
2Nl132A
Turn-Off Time
2Nl132A
(1) Pulse Test: Pulse Width", 300 !-'S, Duty eycle '" 2.0%.
FIGURE 1
SWITCHING TIMES TEST CIRCUIT
VBS
+1.5V
Vce
-15V
1.0 k
150
120 pF
PW = 150 ns
t r '" 2.0 ns
Duty Cycle'" 2.0%
50
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-24
Scope
-
,"mhos
1.0
5.0
2N1613
MAXIMUM RATINGS
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Symbol
Value
Unit
Collector-Emitter Voltage
(RBE'" 10 Ohms)
VCER
50
Vdc
Collector-Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
500
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
0.8
4.57
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
3.0
17.15
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
II
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Case
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VCB
(VEB
(lC
(IE
(lC
=
=
100 mAde, RBE '" 10 Ohms)
100 !LAde, IC
= 60 Vde,
= 60 Vdc,
= 5.0 Vde,
=
= 0)
= 0)
100 !LAde, IE
IE
IE
IC
= 0)
= 0, TA =
= 0)
VCER(sus)
50
-
V(BR)CBO
75
-
V(BR)EBO
7.0
-
-
Vde
nAde
~dc
nAde
Vdc
ICBO
-
-
10
10
lEBO
-
-
10
20
35
20
40
20
35
50
-
-
80
30
120
VCE(sat)
-
0.3
1.5
Vde
VBE(sat)
-
0.78
1.3
Vde
-
MHz
150°C)
ON CHARACTERISTICS(1)
DC Current Gain
(IC
(lC
(lC
(lC
(lC
=
=
=
=
=
100 !LAde, VCE = 10 Vde)
10 mAde, VCE = 10 Vde)
10 mAde, VCE = 10 Vde, TA
150 mAde, VCE = 10 Vde)
500 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC
=
hFE
=
-55°C)
150 mAde, IB
=
15 mAde)
(lC = 150 mAde, IB = 15 mAde)
-
-
SMALL-SIGNAL CHARACTERISTICS
= 10 Vde, IE = 0, f = 100 kHz)
= 0.5 Vde, IC = 0, f = 100 kHz)
Input Impedance (lC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
(lC = 5.0 mAde, VCB = 10 Vde, f = 1.0 kHz)
Voltage Feedback Ratio (lC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
(IC = 5.0 mAde, VCB = 10 Vde, f = 1.0 kHz)
Small-Signal Current Gain (lC = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
(lC = 5.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
Output Admittance (lC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
(lC = 5.0 mAde, VCB = 10 Vde, f = 1.0 kHz)
Noise Figure (lC = 0.3 mAde, VCE = 10 Vde, RS = 510 Ohms, f = 1.0 kHz,
Bandwidth = 1.0 Hz)
Output Capacitance
Input Capacitance
60
-
-
10
25
50
80
pF
hib
24
4.0
-
34
8.0
Ohms
hrb
-
-
3.0
3.0
X 10- 4
30
35
-
100
150
0.05
0.05
-
0.5
0.5
/Lmhos
-
-
-
12
dB
30
ns
fr
Current-Gain - Bandwidth Product(1)
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
(VCB
(VEB
Cobo
Cibo
-
hfe
hob
NF
-
-
pF
-
SWITCHING CHARACTERISTICS
Switching Time
(1) Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-25
2N1711
For Specifications, See 2N718A Data.
2N1893
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Unit
VCEO
80
Vde
Collector-Emitter Voltage
VCER
100
Vde
Collector-Base Voltage
VCBO
120
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
Collector Current -
•
Value
Continuous
IC
0.5
Ade
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
0.8
4.57
Watt
mWfC
Total Device Dissipation @ TC
=
25·C
Po
3.0
17.2
Watts
mWfC
TJ, Tstg
-65 to +200
°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CASE 79-02, STYLE. 1
TO-39 (TO-205AD)
iii .:()'-'
3
~I[
1 Emitter
GENERAL PURPOSE TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
ReJC
58.3
°CIW
Thermal Resistance, Junction to Ambient
ROJA
219
°CIW
NPN SILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
-
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 mAde, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lC = 30 mAde, IB = 0)
(lc = 100 pAde, IE = 0)
(IE = 100 pAdc, IC = 0)
VCER(sus)
100
VCEO(sus)
80
V(BR)CBO
120
V(BR)EBO
7.0
ICBO
-
pAde
pAde
-
0.Q1
15
(VBE = 5.0 Vde, IC = 0)
lEBO
-
0.01
=
=
=
=
hFE
20
35
20
40
(VCB = 90 Vde, IE = 0)
(VCB = 90 Vde, IE = 0, TA = 150°C)
Vdc
Vdc
Vde
ON CHARACTERISTICS
DC Current Gain(1)
(lC
(lC
(lC
(lc
0.1 mAde, VCE = 10 Vde)
10 mAde, VCE = 10 Vdc)
10 mAde, VeE = 10Vdc, TA = -55°C)
150 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 150 mAde, IB = 15 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 150 mAde, IB = 15 mAde)
-
-
-
-
120
-
-
1.2
5.0
Vdc
-
0.9
1.3
Vde
50
-
MHz
-
15
pF
85
pF
hib
20
4.0
30
8.0
Ohms
hrb
-
1.25
1.5
X 10-4
hIe
30
45
100
-
hob
-
VCE(sat)
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
(lC = 50 mAde, VCE = 10 Vdc, I = 20 MHz)
(VCB = 10 Vde, IE = 0, lOa kHz", I '" 1.0 MHz)
(VBE = 0.5 Vde, IC = 0,100 kHz'" I '" 1.0 MHz)
(lC = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
(lC = 5.0 mAde, VCB = 10 Vde, 1= 1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
(lC = 5.0 mAde, VCB = 10 Vde, f = 1.0 kHz)
Small·Signal Current Gain
Output Admittance
(lC = 1.0 mAde, VCE = 5.0 Vde, I = 1.0 kHz)
(lC = 5.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lc = 1.0 mAde, VCB = 5.0 Vdc, I = 1.0 kHz)
(lc = 5.0 mAde, VCB = 10 Vde, 1= 1.0 kHz)
IT
Cobo
Cibo
(1) Pulse Test: Pulse Width", 300 I's, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-26
-
-
0.5
0.5
I'mho
2N2102
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
65
Vdc
Collector-Emitter Voltage, RBE .. 10 Ohms
VCER
80
Vdc
Collector-Base Voltage
VCBO
120
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
1.0
Adc
Total Device Dissipation @ TA = 25'C
Derate above 25'C
PD
1.0
5.71
Watt
mW/'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
PD
5.0
28.6
mWrC
TJ, Tstg
-65 to +200
'c
Symbol
Max
Unit
R8JC
35
'CIW
R8JA(1)
175
'CIW
Collector-Emitter Voltage
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Watts
THERMAL CHARACTERISTICS
•
AMPLIFIER TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPN SILICON
Refer to 2N3019 lor graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
-
Vdc
-
Vdc
OFF CHARACTERISTICS
VCER(sus)
80
VCEO(sus)
65
V(BR)CEX
120
V(BR)CBO
120
V(BR)EBO
7.0
ICBO
-
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
-
0.1 mAdc, VCE = 10 Vdc)
10 mAdc, VCE = 10 Vdc)
10 mAde, VCE = 10 Vdc, TA = -55'C)
150 mAdc, VCE = 10 Vdc)(2)
500 mAdc, VCE = 10 Vdc)(2)
1.0 Adc, VCE = 10 Vdc)(2)
hFE
20
35
20
40
25
10
-
Collector-Emitter Breakdown Voltage
(lC = 100 mAdc, RBE" 10 ohms)
Collector-Emitter Sustaining Voltage(2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lc = 100 mAdc, IB = 0)
(IC = 100 jLJ\dc, VEB = 1.5 Vdc)
(lC = 100 jLJ\dc, IE = 0)
(IE = 100 jLJ\dc, IC = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150'C)
-
Vdc
Vdc
-
Vdc
2.0
2.0
nAdc
jLJ\dc
2.0
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC
(lC
(lC
(lC
(lC
(lC
=
=
=
=
=
=
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAdc)
VCE(sat)
(lC = 150 mAdc, IB = 15 mAdc)
VBE(sat)
-
-
-
120
-
0.15
0.5
Vdc
0.88
1.1
Vdc
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
(VBE = 0.5 Vdc, IC = 0, f = 100 kHz)
(lC = 1.0 mAdc, VCE = 5.0 Vdc, I = 1.0 kHz)
(lc = 5.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
Small-Signal Current Gain
Noise Figure
IT
60
-
Cobo
-
6.0
15
50
80
pF
-
34
8.0
Ohms
3.0
3.0
X 10-4
Cibo
(lC = 1.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
(lc = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
Output Admittance
(lc = 50 mAdc, VCE = 10 Vdc,
1= 20 MHz)
(lC = 1.0 mAdc, VCE = 5.0 Vdc, I = 1.0 kHz)
(lC = 5.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
(lC = 1.0 mAdc, VCE = 5.0 Vdc, I = 1.0 kHz)
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(lC = 300 jLJ\dc, VCE = 10 Vdc, RS = 1.0 k Ohm,
f = 1.0 kHz, Bandwidth = 1.0 Hz)
hib
24
4.0
hrb
-
hIe
30
35
hob
0.01
0.01
NF
-
-
100
150
pF
-
-
0.5
1.0
/Lmho
4.0
6.0
dB
30
ns
SWITCHING CHARACTERISTICS
Switching Time
(1) R8JA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width"", 300 /J-S. Duty Cycle"..;:;: 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-27
2N2218,Al2N2219,A
2N2221,Al2N2222,A
2N5581/82
MAXIMUM RATINGS
Symbol
2N2218
2N2219
2N2221
2N2222
Collector-Emitter Voltage
VCEO
30
Collector-Base Voltage
VCBO
60
75
75
Vde
Emitter-Base Voltage
VEBO
5.0
6.0
6.0
Vde
800
800
800
mAde
Rating
Collector Current -
•
Continuous
IC
2N2218A
2N2219A
2N2221A
2N2222A
2N5581
2N5582
Unit
40
40
Vde
2N2218,A 2N2221,A 2N5581
2N2219,A 2N2222,A 2N5582
Total Device Dissipation
@TA=25"C
Derate above 25"C
Po
Total Device Dissipation
@TC = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
0.5
2.28
0.6
3.33
Watt
mW/"C
3.0
17.1
1.2
6.85
2.0
11.43
Watts
mWfC
-65 to +200
2N2218,A
2N2219,A
CASE 79-02
TO-39 (TO-205AD)
STYLE 1
"C
!: ()
3
2N2221,A
2N2222,A
CASE 22-03
2
1
3 Collector
2
B,,,
TO-1~~~~:~6AA)
0.8
4.57
TJ, Tstg
I
JAN, JTX, JTXV AVAILABLE
3
2N5581
2N5582
CASE 26-03
TO-46 (TO-206AB)
STYLE 1
'Em,""
23"
2
,
GENERAL PURPOSE TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
Non-A Suffix
A-Suffix, 2N5581, 2N5582
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
40
-
60
75
-
5.0
6.0
-
-
10
30
Vde
V(BR)CBO
Non-A Suffix
A-Suffix, 2N5561, 2N5582
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Vde
V(BR)EBO
Non-A Suffix
A-Suffix, 2N5581, 2N5562
Collector Cutoff Current
(VCE = 60 Vde, VEB(off) = 3.0 Vde)
A-Suffix, 2N5581, 2N5562
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA = 150"C)
(VCB = 60 Vde, IE = 0, TA = 150"C)
Non-A Suffix
A-Suffix, 2N5581. 2N5582
Non-A Suffix
A-Suffix, 2N5581, 2N5562
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
A-Suffix, 2N5581, 2N5582
Base Cutoff Current
(VCE = 60 Vde, VEB(off) = 3.0 Vde)
A-Suffix
ICEX
ICBO
lEBO
IBL
Vde
-
-
nAde
pAde
0.01
0.01
10
10
10
nAde
20
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
-
hFE
2N2218,A, 2N2221,A, 2N5561(1)
2N2219,A, 2N2222,A, 2N5582(1)
20
35
2N2218,A, 2N2221,A, 2N5581
2N2219,A, 2N2222,A, 2N5582
25
50
(lC = 10 mAde, VCE = 10 Vde)
2N2218,A, 2N2221,A, 2N5561(I)
2N2219,A, 2N2222,A, 2N5582(1)
35
75
(lC = 10 mAde, VCE = 10 Vdc, TA = -55"C)
2N2218A, 2N2221A, 2N5581
2N2219A, 2N2222A, 2N5582
15
35
(lC = 150 mAde, VCE = 10 Vde)(l)
2N2218,A, 2N2221,A, 2N5581
2N2219,A 2N2222 A 2N5582
40
100
(lC = 1.0 mAde, VCE = 10 Vde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-28
-
-
-
-
120
300
2N2218/19/21/22, A SERIES, 2N5581/82
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
(lc = 150 mAde, VCE = 1.0 Vde)(1)
2N2218,A, 2N2221,A, 2N5581
2N2219,A, 2N2222,A, 2N5582
20
50
-
(lC = 500 mAde, VCE = 10 Vde)(1)
2N2218, 2N2221
2N2219,2N2222
2N2218A, 2N2221A, 2N5581
2N2219A, 2N2222A, 2N5582
20
30
25
40
-
Non-A Suffix
A-Suffix, 2N5581, 2N5582
-
-
0.4
0.3
Non-A Suffix
A-Suffix, 2N5581, 2N5582
-
1.6
1.0
Non-A Suffix
A-Suffix, 2N5581, 2N5582
0.6
0.6
1.3
1.2
Non-A Suffix
A-Suffix, 2N5581, 2N5582
-
-
2.6
2.0
250
300
-
-
8.0
-
-
30
25
2N2218A, 2N2221A
2N2219A,2N2222A
1.0
2.0
3.5
8.0
2N2218A, 2N2221A
2N2219A,2N2222A
0.2
0.25
1.0
1.25
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IS = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
Base-Emitter Saturation Voltage(1)
(lc = 150 mAde, IB = 15 mAde)
VCE(sat)
-
Vde
Vde
VBE(sat)
(lc = 500 mAde, IB = 50 mAde)
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lc = 20 mAde, VCE = 20 Vde, I = 100 MHz)
All Types, Except
2N2219A, 2N2222A, 2N5582
Output Capaeitanee(3)
(VCB = 10 Vde, IE = 0, I = 100 kHz)
Input Capaeitanee(3)
(VEB = 0.5 Vde, IC = 0, I = 100 kHz)
Input Impedance
(lc = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lc = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
Voltage Feedback Ratio
(lc = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lc = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lc = 10 mAde, VCE = 10 Vde, 1= 1.0 kHzl
Output Admittance
(IC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lc = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAde, VCB = 20 Vde, I = 31.8 MHz)
Noise Figure
(lc = 100 !LAde, VCE = 10 Vde,
RS = 1.0 kohm, I = 1.0 kHz)
tr
Cobo
Cibo
Non-A Suffix
A-Suffix, 2N5581, 2N5582
MHz
pF
pF
kohms
hie
X 10-4
h re
2N2218A, 2N2221A
2N2219A, 2N2222A
-
-
5.0
8.0
2N2218A,2N2221A
2N2219A,2N2222A
-
2.5
4.0
2N2218A,2N2221A
2N2219A,2N2222A
30
50
150
300
2N2218A, 2N2221A
2N2219A,2N2222A
50
75
300
375
2N2218A,2N2221A
2N2219A, 2N2222A
3.0
5.0
15
35
2N2218A,2N2221A
2N2219A, 2N2222A
10
25
100
200
rb'C e
-
150
ps
NF
-
4.0
dS
Re(hie)
-
60
Ohms
-
hie
/Lmhos
hoe
A-Suffix
2N2222A
Real Part 01 Common-Emitter
High Frequency Input Impedance
(lC = 20 mAde, VCE = 20 Vde, I = 300 MHz)
2N2218A, 2N2219A
2N2221A, 2N2222A
(1) Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
(2)
is deli ned as the Irequency at which Ihlel extrapolates to unity.
(3) 2N5581 and 2N5582 are Listed Ceb and Ceb lor these conditions and values.
tr
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-29
•
2N2218,Al2N2219,Al2N2221 ,Al2N2222,Al2N5581 /82
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"e unless otherwise noted.)
I
Characteristic
Max
Unit
-
10
ns
-
25
ns
-
225
ns
tf
60
ns
TA
-
2.5
ns
Symbol
Min
(Vee = 30 Vdc, VSE(off) = 0.5 Vdc,
Ie = 150 mAde, IS1 = 15 mAde)
(Figure 14)
td
tr
(Vee = 30 Vdc, Ie = 150 mAde,
IS1 = IS2 = 15 mAde)
(Figure15)
ts
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Active Region Time Constant
(Ie = 150 mAde, VeE = 30 Vdc) (See Figure 12 for 2N2218A, 2N2219A,
2N2221A 2N2222A)
•
FIGURE 1 - NORMALIZED DC CURRENT GAIN
z
:;;:
...'"
~
4.0
3.0
2.0
'"'"
~
'-'
c
~
N
~
--
I
~50~
....j.:.
1-
-
f--
-
I-
- 1- rr- - - r---~
-
-
1-
-
0.7
0.5
z
~
TJ =175 0; '
1.0
c
JCE~1.0VI_
I
-
-
55 0C
-VCE=lOV_
r......
.......
1-
.--
\
~
0.3
0.2
0.5
-
0.7
1.0
2.0
3.0
10
5.0
20
30
70
100
200
""I
,,~
"
~
300
500
IC,COLLECTOR CURRENT (mAl
FIGURE 2 - COLLECTOR CHARACTERISTICS IN SATURATION REGION
1.0
@
0.8
~
~
~
§<
ffi
~
I.
0.6
\\
\\
\ 1"'-..,
8
,i!
--
0.2
EXAMPLE: For type 2N2219, estimate a base current (I.) to insure
saturation at a temperature of 25"e and a collector current of
150 mAo
Observe that at I, = 150 mA an overdrive factor of at least 2.5
is required to drive the transistor well into the saturation region. From
Figure I, it is seen that h~ @ 1 volt is approximately 0.62 of h~ @ 10
volts. Using the guaranteed minimum gain of 100 @ 150 mA and
10 V, /30 = 62 and substituting values in the overdrive equation,
we find:
Ie = 300 mA
"' --"-
0.4
This graph shows the effect of base current on collector current. /30
(current gain at the edge of saturation) is the current gain of the
transistor at 1 volt, and /3. (forced gain) is the ratio of lei I. in a circuit.
TJ = 25"C
150mA
r---
50 mA
/30
h,,@ LOV
7J;=1Jj;;o
o
1.0
2.0
/301/3"
3.0
4.0
62
2.5= 150/1.
5.0
OVERDRIVE FACTOR
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-30
1.::::6.0 mA
2N2218,A/2N2219,A/2N2221,A/2N2222,A/2N5581/82
FIGURE 4 - TEMPERATURE COEFFICIENTS
FIGURE 3 - "ON" VOLTAGES
1.4
+1.6
TJ = 25~C
>
.§.
~
'"w
.
+O.B
ffi
l/'
VaE(sa!)@IClia
O.B
~i"'""
=10
':; 0.6
VBE @VCE
0.4
B
w
'":::>>-
..~
0.2
VCE(sa!)@ICIlB
o
1.0
0.5
2.0
5.0
10
Si
....
....,..,
=10
20
50
100
i
200
500
...'"
1-550Cto 1250C)
~
=\~O V
11111111
I 1111111
IIJl.....-'1
9VC for VCE(sat)
<:;
to
'">
,;
(250C to 1750CI
>-
1.0
<:!
1111
'-'
e..
1.2
-O.B
./'
-1.6
III
-2.4
0.5
V"
9va for VBE
5.0
2.0
1.0
IC. COLLECTOR CURRENT (mA)
10
20
50
III100
I
500
200
IC. COLLECTOR CURRENT ImA)
h PARAMETERS
vCE
= 10 Vdc, f = 1.0 kHz, T A = 25 0 C
This group of graphs illustrates the relationship between hfe and other "h" parameters
for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were
selected and the same units were used to develop the correspondingly numbered curves
on each graph.
FIGURE 6 - VOLTAGE FEEDBACK RATIO
FIGURE 5 - INPUT IMPEDANCE
0
......
50
....... 1'-..
D
0-
~
0
0
1.0
~
.....
Ie. COLLECTOR CURRENT lmAde)
300
~
15
....
I.......
1.0
0.1
20
\
r'....
'3
'")
./
/
30
0.1
0.2
50
~ 20
./
0.5
1.0
2.0
5.0
10
I
100
10
I~
-
5.0
0.1
20
Ie. COLLECTOR CURRENT ImAdo)
.".
"""" . . . V2.L.
I-""
0.2
0.5
1.0
2.0
Ie. COlLECTOR CURRENT ImAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-31
'"
5.0
10
20
•
2N2218,Al2N2219,Al2N2221 ,Al2N2222,Al2N5581 /82
SWITCHING TIMI CHARACTERISTICS
FIGURE 10 - CHARGE DATA
FIGURE 9 - TURN-ON TIME
200
10.000
~
I,@SV
'"'V-
10Ot\.
I,
TJ = 2S'C
Ie/I, = 10
"-
Vee= 30V
UNLESS NOTED
r\.
SOOO ~~
TJ = 2S'C
Icll, 10
I-rI- r- Vc = SVIUNLESS NOTEDI
1'0: 2V
•
0
I
''\
.'\
,~
,""
~
i'.
10
3.0
S.O
l/
V ..... ~
200 ~
100
SO
200
100
20
3.0
300
Vee = 30V
,
I I II II
5.0
7.0
10
,
20
30
50 70
Ie, COLLECTOR CURRENT ImAl
FIGURE 11- TUIIN-OFF BEHAVIOR
300
'" '"
200
~
!>!
'"~
100
70
Q
~
50
~t;
30
"'"
'-
"'r--.
-
200
~
t"-- lell" = 10
~
'"~
'"
"
, , "
lell" = 10
.:i
20
10
10
~
It
r-...
I'-
30
50
70
.......
:-----
,TJ =2S'C
, ,
20
~P
lell" =20
LOW GAIN TYPES
-
E
100
" '"
I
30
20
r-...
t>: t-.. .
20
lell"
4H
""=
10 ........
t,
r-.
-
'-
GAIN TYPES
TJ ,2S',C
20
30
SO
70
100
Ie. COlLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-32
._- ---
......
10
10
Ie, COLLECTOR CURRENT ImAl
200 300
70
50
300
~
lell"
~
...... t>o
200
-~
Q
.:i
.........
100
t.
10
lell"
r-~
100
,....
300",
""-
[,I"'"
f'
~.QA,ACTIVE REGIO~t:: ALL TYPES
CHARGE
I'"
~
20
30
SO
Ie, COLLECTOR CURRENT ImAl
10
HIGH GAIN TYPES
L?WGAINTY PES
SOO
~
'\
~
QT, TOTAL CONTRO~~
CHARGE
~
~'\
V
'-.'\
f- td@VElloffl = 0
...
./
1000
!,,@VElloffl ,\
0
_I--""
2000
200
300
2N2218,A/2N2219,A/2N2221,A/2N2222,A/2N5581/82
FIGURE 13 - STORAGE TIME AND FALL
TIME EQUIVALENT TEST CIRCUIT
FIGURE 12 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
GENERATOR RISE TIME'; 2.0 ns
PW'; 200 ns
DUTY CYCLE = 2.0%
+30 V
+30 V
200
9.9V
n
<>-
619
o-..d--~ 05V
OSCILLOSCOPE
Rin> 100 k ohms
Cin'; 12pF
RISE TIME'; 5.0 ns
SCOPE
Rin> 100 k ohms
~ 500~s-1
-3.0 V
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-33
Cin'; 12pF
RISE TIME'; 5.0 ns
•
2N2270
MAXIMUM RATINGS
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
CASE 79-02, STYLE 1
Collector-Emitter Voltage, RBE '" 10 Ohms
VCER
60
Vdc
TO-39 (TO-205AO)
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
1.0
Adc
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
1.0
5.71
Watt
mWrC
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Collector Current -
•
Value
Continuous
Operating and Storage Junction
Temperature Range
fij ~~-
3
~I[
1Eminer
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RWC
35
·CIW
RWA(I)
175
·CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPNSILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25·C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
-
Vdc
OFF CHARACTERISTICS
= 100 mAde, RBE '" 10 Ohms)
= 100 mAde, IB = 0)
Collector-Base Breakdown Voltage (lC = 0.05 pAde, IE = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAde, IC = 0)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0, TC = 25·C)
(VCB = 60 Vde, IE = 0, TC = 150·C)
Emitter Cutoff Current (VBE = 5.0 Vde, IC = 0)
-
Collector-Emitter Breakdown Voltage(2)
(lC
V(BR)CER
60
Collector-Emitter Sustaining Voltage(2)
(lC
VCEO(susl
45
V(BR)CBO
60
-
V(BR)EBO
7.0
-
ICBO
-
-
0.05
100
pAde
lEBO
-
-
100
nAdc
30
50
90
135
200
-
-
Vdc
Vde
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 150 mAde, VCE = 10 Vde)
hFE
-
-
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.15
0.9
Vdc
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
0.88
1.2
Vde
tr
100
250
-
MHz
Cabo
-
10
15
pF
Cibo
-
60
80
pF
hie
50
-
275
-
NF
-
7.0
10
dB
30
ns
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, I = 20 MHz)
Output Capacitance
(VCB = 10 Vde, IE
Input Capacitance
(VBE = 0.5 Vde, IC
=
0, I
=
= 0, f =
100 kHz)
100 kHz)
Small-Signal Current Gain
(Ie = 5.0 mAde, VCE = 10 Vde, f
=
Noise Figure
(lC = 0.3 mAde, VCE = 10 Vde, RS
I = 1.0 kHz, B.W. = 1.0 Hz)
1.0 kHz)
=
1.0 k Ohm,
SWITCHING CHARACTERISTICS
I Total Switching Time
ton + toff
(1) RWA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-34
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
Vdc
15
20
2N2368,9,A
2N3227
Collector-Emitter Voltage
VCES
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.5
6.0
Collector Current
(10 p.s pulse)
IC(Peak)
500
mA
IC
200
mA
0.36
2.06
Watt
mWrC
1.2
6.85
Watts
mWrC
.68
6.85
Watts
mWrC
-65 to +200
°C
Continuous
2N2369A,
2N3227
Total Device Dissipation
@TA ~ 25°C
Derate above 25°C
PD
Total Device Dissipation
PD
@TC~25°C
2N3227
Derate above 25°C
2N2369A JAN, JTX
JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Vdc
2N2368,9,A
2N3227
Collector Current -
2N2368
2N2369,A
2N3227
Unit
VCEO
Total Device Dissipation
@TC ~ 100°C
Derate above 100°C
3
!l
2
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
~
1 Emitter
1
SWITCHING TRANSISTOR
PD
Operating and Storage Junction
Temperature Range
":~'''".'
NPN SILICON
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
20
-
Vdc
Collector-Emitter Breakdown Voltage
(lc ~ 10,.A, VBE ~ 0)
V(BR)CES
40
-
Vdc
Collector-Emitter Sustaining Voltage(1)
(lc ~ 10 mAdc, IB ~ 0)
VCEO(sus)
15
-
Vdc
Collector-Base Breakdown Voltage
(lc ~ 10,.A, IB ~ 0)
V(BR)CBO
40
-
Vdc
4.5
6.0
-
-
0.2
-
0.4
0.2
-
30
50
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage( 1)
(lC '" 10 mAdc, VBE ~ 0)
2N3227
Emitter-Base Breakdown Voltage
(IE ~ 10 ,.Adc, IE ~ 0)
Collector Cutoff Current
(VCE ~ 20 Vdc, VBE ~ 3.0 Vdc)
ICEX
~
20 Vdc, IE
~
,.Adc
ICBO
2N2368, 2N2369
2N3227
0, TA
~
2N2368,2N2369,2N2369A
2N3227
150°C)
ICES
-
0.4
,.Adc
IB
-
0.4
,.Adc
20
40
60
120
120
300
Collector Cutoff Current
(VCE ~ 20 Vdc, VBE ~ 0)
2N2369A
Base Current
(VCE ~ 20 Vdc, VBE
0)
2N2369A
1.0 Vdc)
2N2368
2N2369
2N2369A
2N3227
100
2N2368
2N2369
2N3227
10
20
40
-
2N2369A
2N2369A
20
30
-
~
,.Adc
2N3227
Collector Cutoff Current
(VCB ~ 20 Vdc, IE ~ 0)
(VCB
Vdc
V(BR)EBO
2N2368,2N2369,2N2369A
2N3227
ON CHARACTERISTICS
DC Current Gain( 1)
(lc ~ 10 mAdc, VCE
(lc
(lc
(lc
~
~
~
10 mAdc, VCE
10 mAdc, VCE
30 mAdc, VCE
hFE
~
~
~
~
1.0 Vdc, TA
~
0.35 Vdc, TA
0.4 Vdc)
~
-55°C)
-55°C)
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-35
-
-
-
•
2N2368, 2N2369,A, 2N3227
ELECTRICAL CHARACTERISTICS (continued) (TA
~
25°C unless otherwise noted.)
Symbol
Characteristic
Max
(lC
~
100 mAde; VCE
~
1.0 Vde)
2N2369A
2N3227
20
30
-
(lC
~
100 mAde, VCE
~
2.0 Vde)
2N2368
2N2369
10
20
-
Collector-Emitter Saturation Voltage(1)
(lC ~ 10 mAde, IB ~ 1.0 mAde)
•
Min
(lC
(lC
~
~
10 mAde, IB
30 mAde, IB
~
(lC
~
100 mAde, IB
1.0 mAde, TA
3.0 mAde)
~
~
~
100 mAde, IB
~
~
+ 125°C)
10 mAde)
Vde
2N2368, 2N2369, 2N3227
2N2369A
-
0.25
0.20
2N2369A
2N2369A
-
0.30
0.25
-
2N2369A
2N3227
Base-Emitter Saturation Voltage(1)
(lC ~ 10 mAde, IB ~ 1.0 mAde)
(lC ~ 10 mAde, IB ~ 1.0 mAde, TA
(lC ~ 10 mAde, IB ~ 1.0 mAde, TA
(lc ~ 30 mAde, IB ~ 3.0 mAde)
(lC
VCE(sat)
0.50
.45
Vde
VBE(sat)
~
~
All Types
2N2369A
2N2369A
2N2369A
+ 125°C)
-SSOC)
10 mAde)
0.70
0.59
-
2N2369A
2N3227
Unit
0.8
0.85
1.02
1.15
1.60
1.4
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc ~ 10 mAde, VCE ~ 10 Vde, I ~ 100 MHz)
2N2368
2N2369,2N2369A,2N3227
Output Capacitance
(VCB ~ 5.0 Vde, IE
~
0, I
~
140 kHz)
All Types
Input Capacitance
(VBE ~ 1.0 Vde, IC
~
0, I
~
140 kHz)
2N3227
fr
MHz
400
500
-
-
Cobo
-
4.0
pF
Cibo
-
4.0
pF
td
-
5.0
ns
tr
-
18
ns
SWITCHING CHARACTERISTICS
I
Delay Time
I
Rise Time
(VCC ~ 10 V, VEB ~ 2.0 Vde,
100 mA, IB1 ~ 10 mAl
Storage Time
(lC ~ IB1 ~ 10 mAde, IB2 ~ -10 mAde)
(lC ~ 100 mAde, IB1 ~ IB2 ~ 10 mAde, VCC
Fall Time
(VCC ~ 10 V, IC
~
100 mA, IB1
~
IB2
~
2N3227
~
-
-
10
13
13
tl
-
15
ns
ton
-
12
ns
-
-
-
15
18
2N2368
2N2369A
2N3227
10 V)
2N3227
10 mAl
Turn-On Time
(lc ~ 10 mAde, IB1
~
3.0 mA, IB2
~
-1.5 mA, VCC
~
3.0 Vde)
All Types
Turn-Off Time
(lc ~ 10 mAde, IB1
~
3.0 mA, IB2
~
-1.5 mA, VCC
~
3.0 Vde)
2N2368
2N2369,
2N2369A,
2N3227
toff
Total Control Charge
(lc ~ 10 mA, IB ~ 1.0 mA, VCC
a,.
~
ns
ts
3.0 V)
\
2N3227
(1) Pulse Test: Pulse Width"" 300 /LS, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-36
-
ns
-
50
pC
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
FIGURE 1 - t.. CIRCUIT - 10 rnA
t." CIRCUIT -
FIGURE 3 -
10 rnA
+IO':~n-.....j
I, \4-.....
I
-1.5 V
-J
< Ins
PULSE WIDTH (I,) = 300
• DUTY CYCLE = 2%
'1' .
_..JC,<4pl
ns
FIGURE 2 - t.. CIRCUIT - 100 rnA
-l
I,
FIGURE 4- to" CIRCUIT -100 rnA
I-
+ID'8V~
-2V
+
-ll<
1l.4:n_.-8.6 V----=t~
_.1-
,T'
Ins
300 ns
_JC,'< 12pl
PULSE WIDTH (I,) =
OUTY CYCLE = 2%
-.....,..., .
~,
Ins
_ ":Cs
PULSE WIDTH (I,) BETWEEN 10 AND
DUTY CYCLE = 2%
< 12 pf
5oo~s
• Total shunt capacitance of lest jig and connectors.
FIGURE 5 -
TURN-ON AND TURN-OFF TIME
TEST CIRCUIT
TURN·ON WAVEFORMS
OV'~'. 10%
2201l
V,.,
~ 90%
+ to", ..
~
33KIl
V"
33K
PULSE GENERATOR
V" RISE TIME < I ns
SOURCE IMPEOANCE ~ SOil
PW~300
I
SOil
SOil
\...!)(
ns
< 2%
V"
0005"F 0005"F
:'1
I"-
.....
;:
oI",F"
O.l",F
V,.,:
~ Vee ~ 3V
-.
.;:
-
h
i"- ~
C,b
L-ft
r-.....
~F _10
Vee=10V
Voa = 2 V
I\.
\ 1\ '"
I--
I\~
I"- .....
- - - ....
TYPICAL SWITCHING TIMES
'\.
50
~
C.b
1\
"
I, (Vee = 3 VJ
~
oS 20
/
'"
1\
;::
Z
:;:
~
'-"
t--
10
~
I ......
/'
I--"
0.1
Vee
"~
<.0
~
~
L~ "'-
'"
:E
.... ....
= 10V
~ ....
'\.
N.
,./
I
2
1
0.2
0.5
1.0
2.0
5.0
90%
V,,~+12V
100
-LIMIT I
- -TYPICAL
T, = 25°C~
~
~I'H. V,,- -15V
FIGURE 7 -
JUNCTION CAPACITANCE VARIATIONS
l"-
SOil
ov::-;.-:n.-I\.--- 10%
I
...
FIGURE 6 -
~.
1URN·OFF WAVEFORMS
0.0023",F
0.0023"F
_Jl
DUTY CYCLE
TO OSCILLOSCOPE
INPUT IMPEDANCE
RISE TIME = I ns
I
10
10
20
Ie, COllECTOR CURRENT (mA)
REVERSE BIAS (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-37
50
100
•
2N2368, 2N2369,A, 2N3227
FIGURE 8 500
I
MAXIMUM CHARGE DATA
l
J II
t- Vee = 10 V
I II
- - -100°C
t----25°C
I
a,. I!' = 10
~b'
I II
200
/
40
QT. {IF
J
~ ~V
/
//
100
•
:;....-
.~
50
f--
i--"::~-::
....-
y
10 V
QA. Vee
FIGURE 9 -
/
QT TEST CIRCUIT
3V
O-'VYy_---,
270
VALUES REFER TO
Ie = 10 mA TEST POINT
II
./
I
PULSE WIDTH (tl),:;::::; 5 ,usee
DUTY CYCLE =: 2%
V
Va,. Vee = 3 V
V
20
V
Y
./
'"
'"
~
/
10
1
10
20
50
100
Ie. COLLECTOR CURRENT (mA)
FIGURE 10 -
C-..COPf
TURN-OFF WAVE FORM
FIGURE 11 -
+: -CJt~
-~ f-
~o
-4V
<
Insec
PULSE WIDTH {til
TIME---..
FIGURE 12 -
STORAGE TIME EQUIVALENT TEST CIRCUIT
OUTY CYCLE
=
=
300 nsec
2%
MAXIMUM COLLECTOR SATURATION VOLTAGE CHARACTERISTICS
1.0
\
\
\
Ic= 3mA
Ic = 10 mA
\
Ic=30mA
\Ic= SOmA
\
\
\
\
.........
0.2
0.02
1\
\
~
""- I'....
"....
TJ = 25°C
Ic = 100 mA
\
\
'" --r----
:\~
1"- _ _
' -r--
-
-
0.05
0.1
0.2
0.5
1.0
I.. BASE CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-38
10
20
2N2368, 2N2369,A, 2N3227
FIGURE 13 -
MINIMUM CURRENT GAIN CHARACTERISTICS
200
z
~ 100
~
1'l
-I-"
TJ
= 125°C
TJ
_
TJ
V - I-"
50
:E
~
=--:::::::,...
7SoC
25°C
TJ I
~
----
f.--
---
115~C
-I'---
~
20
1.2
1
10
~
z:
02
~
~
1
0.5
..........
"
.......
100
-2.S
20
SO
100
Ie, COLLECTOR CURRENT (rnA)
(2S0C TO 121S0C)
1 -I
for VCE [1.tJ
(15S0CITO +TC)
APPROXIMATE DEVIATION
fROM NOMINAL
55"C TO +25"C
.... 015 mY/DC
I
f7
o
25"CTO 125"C
~
10
20
OVI
(~SSOC ITO + dsoc)
+0 15 mV/"C
+03mVJQC
::!::04 mV/oC
-1.S
-2.0
0.2
10
{Jvc
U
...
§ -1.0 '"
MAX VCE('~fl
-
I I
§ -0.5
8
1
["":
r--. ~ .....
r---.. ........... :'- "-
t--
so
~
~
.s>
,/
0.6
J 0.4
""" ~
.........
FIGURE 15 - TYPICAL TEMPERATURE COEFFICIENTS
~"I'!'I
0.8
~ l'<'
...............
20
1.0
MAX~"y
1.0
"
-.........
2SoC and 75°C
TJ
......
Ie, COLLECTOR CURRENT (rnA)
-T~~2~~C
~
""'
~
V
FIGURE 14 - SATURATION VOLTAGE LIMITS
1.4
I
~
TJ = -55°C
1
I
leEr r
:--..
_V
~
20
I
L
f-""""
::>
Z
.- ~ f,..---
.,...--
;..-
g
'"'"
--- --- -- ~
I
(2S0C TO 12S0C)
for VaEI.al)
I
I
30
40
SO
60
70
Ie COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-39
80
90
100
•
2N2481
JAN. JTX AVAILABLE
CASE 22-03. STYLE 1
TO-18 (TO-206AA)
frl ":~"~.'
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0.36
2.06
Watt
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.2
6.9
Watts
TJ, Tstg
-65 to +200
°C
Rating
a
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
3
(I
1 Emitter
SWITCHING TRANSISTOR
NPN SIUCON
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
IIc = 30 mAdc, IB = 0)
V(BR)CEO
15
Collector-Emitter Breakdown Voltage
IIc = 1.0 IlAde, VBE = 0)
V(BR)CES
30
-
Collector-Base Breakdown, Voltage
IIc = 10 IlAde, IE = 0)
V(BR)CBO
40
-
Vdc
Emitter-Base Breekdown Voltage
liE = 100 IlAde, IC = 0)
V(BR)EBO
5.0
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 3.0 Vdc)
(VCE = 20 Vdc, VBE = 3.0 Vdc, TA
ICEX
=
Base Cutoff Current
(VCE = 20 Vdc, VBE
Vdc
IlAdc
-
0.05
15
lEBO
-
100
nAdc
IBL
-
50
nAdc
25
40
20
20
120
-
150°C)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
Vdc
= 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
IIc = 1,0 mAde, VCE = 1.0 Vdc)
IIc = 10 mAde, VCE = 1.0 Vdc)
IIc = 10 mAde, VCE = 1.0 Vde, TA
IIc = 150 mAde, VCE = 1.0 Vdclll)
hFE
=
-55°ClIl)
Collector-Emitter Saturation Voltage
IIc = 10 mAde, IB = 1.0 mAde)
IIc = 100 mAdc, IS = 10 mAdclll)
VCE(sat)
Base-Emitter Saturation Voltage
IIc = 10 mAdc, IB = 1.0 mAde)
IIc = 100 mAdc, IS = 10 mAdclll)
VBE(sat)
-
-
Vde
0.25
0.40
Vdc
0.7
-
0.82
1.25
SMAU-8IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 V, IC = 0, f
=
5.0
pF
Cibo
-
7.0
pF
hfe
3.0
-
-
Re(hie)
-
60
Ohms
Cobo
1.0 MHz)
Input Capacitance
(VEB = 0.5 V, f = 1.0 MHz)
Small-Signal Current Gain
(VCE = 10 V, IC = 10 rnA, f
=
Real Part of Input Impedance
IIc = 10 rnA, VCE = 10 V, f
= 250 MHz)
100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-40
2N2481
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
I
Char3cteristic
Min
Symbol
Max
Unit
-
20
ns
-
40
75
-
55
45
SWITCHING CHARACTERISTICS
Storage Tirne
(Ie = 10 rnA. IBl = 10 rnA, IB2 = 10 rnA)
ts
Turn-On Tirne
(Ie = 100 rnA. IBl = 10 rnA. VBE(off) = 2.0 V)
(Ie = 10 rnA, IBl = 1.0 rnA. VBE(off) = 2.0 V)
ton
Turn-Off Time
(Ie = 100 rnA, IBl = 10 rnA, IB2 = 5.0 rnA)
(Ie = 10 rnA, IBl = 1.0 rnA, IB2 = 0.5 rnA)
toff
ns
ns
-
(1) Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
•
COLLECTOR SATURATION VOLTAGE CHARACTERISTICS
1.0
TJ !25"C
~
~
;;::
0.8
Ic = 20 mAde
Ic= 10 mAc
~
Ic= 50 mAde
ffi
I.
0.6
:>
...
~
0.4
\ Ic = 100 mAde
\
\
t::
\
\.
0.2
0.2
..........
0.5
0.3
\
\
-- -
"-""'"
,j!
\
....... .....
..........
i'...
...............
I-
0.7
1.0
2.0
"'-...
r- Io-.
r-S.o
3.0
7.0
10
20
I" BASE CURRENT (mAl
MINIMUM CURRENT GAIN CHARACTERISTICS
--0::'----- - --
0
50
~
~
----
I--'"
0~ V
0
---
V
--
TJ
12S"C
TJ
7S"C
- ----r--
r--
TJ -2S'C
~~
l-- ~
ITJ
I-
--
--
-I-- l""'-
IS'C
I
TJ =-SS'C
-r-., r-. .............
-I--
I-
t--- l""'-
Ve,= 1Vde
~~ ~
I--~
f' r-...
t--~
I'......
7.
1.0
2.0
3.0
5.0
7.0
10
20
30
Ie, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-41
50
70
"""
"~
r-..... ""'
.......
100
"" .......
200
2N2481
TYPICAL TEMPERATURE COEFFICIENTS
UMITS OF SATURATION VOLTAGES
+1.0
1.8
PF=IO
I
If
I.6 - TJ=25°C
.4
V
.2
.0
.8
•
+0.5
MAXY"'a'}
~
-
{-5j
0
5
.....
I0
MINY"'HI}
II
4
O.2
2.0
3.0
I I
5.0 7.0 10
,/
-
MAXYCE'a.}
0
1.0
125to12JOC}
/Jvc,1e.J
~
20
V
1 12~OC}
--
{25 C10
-
{ 55°C 10 25°C}
lIV,fo'Y"{a'}
-2. 0
50 70 100
30
5/
..-
OCIOTC} -
-2.5
w
o
200
~
~
Ie. COllECTOR CURRENT ImA}
m m
~
~
~
w
~
}e. COLLECTOR CURRENT {mAl
TYPICAL SWITCHING CHARACTERISTICS
RISE TIME BEHAViOR
TURN·ON TIME VARIATIONS WITH VOLTAGE
500
500
PF 10
TJ= 25°C
~
"'"
200
.......
100 ~
50
:::-...
~
"
l,@Yee
r
. . . . -::-''1
...... ~
~
I
r - r- r- t.@Y ..
r0-
r-
t-
~
..s
t.
Ycc= 10Ydc, I PF=IO
--TJ=25°C _
--TJ=125°C _
,
~
100
50
I"20
h@Y"
I
I I II
3.0
5.0 7.0 10
.~
~~
~
0-
I I
20
30
50 70 100
~il==
10
5.0
1.0
200
2.0 3.0
mRAGE TIME BEHAVIOR
i\.
30
~. l /
.....
-
1111
- - T J = 25°C
--TJ=125°C
~
-
I-
-
3.0
~
-
--
....
2.0
5.0 7.0 10
20
30
50 70 100
200
~ 100
~
=l
50
"-
",
TJ= 125°C
"-
'"
;f
..=
~
50 70 100
Vee 10Ydc
TJ = 25°C
500
200
.0
5.0
1.0
30
FAU TIME BEHAVIOR
to';" t,-IIt,
I I 1 1"=1,,
-
~
~ I...... ",
. . . . i' l'l .....
,OJ- PF=2O
20
1000
PF=IO
t~~
5.0 7.0 10
}e. COLLECTOR CURRENT {mAl
Ie. COLLECTOR CURRENT {mAl
50
~
2Vdc
5.0
2.0
10Ydc
:;
~
....... , j '
t.@Ycc~3Ydc
o
~
200
....... :::-...
:-...
2.0
1.0
!,
P.
PF=IO........
20
10
200
Ie. COllECTOR CURRENT {mA}
5.0
1.0
2.0 30
5.0 7.0 10
20
,
I........
~
'" ...
20
30
Ie. COLLECTOR CURRENT {mA}
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-42
1'--.
50 70 100
200
2N2481
WHenOH CAPAClTAllCE VARlAnDIS
10
7.0
~
~
;!i
5.0
r-
--
I
~.
700 ~fJF 10
ITr-25°C
500 ITJ = 1250C
-I'
-. 'f-
I,t
MAXIMUM CHARGE DATA
1000
--MAXIMUM
--TYPICAL
-.1
· .. t
C.. -~
..... ~
-- ......
~
-
I
........ ~
.....
-d
."'I',
r-
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
~
0
50
I-- t10
•
20
I..
vi-Ilo "
0..,.,
./
Vcc- 3Vdc
2.0 3.0
5.0 7.0 10
ZO
30
Ie. COLLECTOR CUlCRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-43
V
Or
Vcc- IOVdc
100
30
0.2
:.::::~i"""
-
't200
3.0
2.0
0.1
.I
A
300
50 70 100
ZOO
II
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
50
mAdc
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
360
2.06
mW
mWrC
total Device Dissipation @ TC = 25'C
Derate above 25'C
PD
1.2
6.85
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Symbol
Max
Unit
RIiJC
146
'CIW
RIiJA(I)
485
'CIW
lL
300
·C
Collector Current -
•
2N2484
Continuous
Operating and Storage Junction
Temperature Range
JAN, JTX, JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
fl.:()'~"'
,1/
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Temperature
1116' from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TA
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N2481 for graphs.
= 25'C unless otherwise noted.)
Characteristic
"m'~
Symbol
Min
Typ
Max
Unit
-
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VCB
(VBE
=
IIC
liE
IIC
=
=
=
10 mAde, IB
10 pAdc, IC
= 45 Vdc,
= 45 Vdc,
= 0)
= 0)
= 0)
10 pAdc, IE
IE
IE
5.0 Vdc, IC
= 0)
= 0, TA =
= 0)
V(BR)CEO
60
V(BR)CBO
60
V(BR)EBO
6.0
ICBO
150'C)
lEBO
-
-
-
Vde
10
10
nAdc
pAdc
10
nAde
-
-
Vdc
ON CHARACTERISTICS
= 1.0 pAdc, VCE = 5.0 Vdc)
= 10 pAdc, VCE = 5.0 Vdc)
= 10 pAdc, VCE = 5.0 Vdc, TA = 55'C)
= 100 pAdc, VCE = 5.0 Vdc)
= 500 pAdc, VCE = 5.0 Vdc)
= 1.0 mAdc, VCE = 5.0 Vde)
= 10 mAde, VCE = 5.0 Vdc)(l)
Collector-Emitter Saturation Voltage IIC = 1.0 mAde, IB = 0.1
Base-Emitter On Voltage (IC = 0.1 mAde, VCE = 5.0 Vdc)
DC Current Gain
IIC
IIc
IIc
IIc
IIc
IIc
IIC
hFE
mAdc)
30
100
20
175
200
250
190
250
40
275
300
350
400
500
-
-
VCE(sat)
-
0.25
0.35
Vdc
VBE(on)
0.5
0.65
0.7
Vdc
IT
15
60
SO
100
-
MHz
Cobo
-
3.0
6.0
pF
Cibo
-
4.0
6.0
pF
hie
3.5
-
24
kG
800
X 10-6
-
900
,..mhos
800
SMALL-5IGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
= 0.05 mAdc, VCE = 5.0 Vdc, f =
s.o MHz)
IIC = 0.5 mAde, VCE = 5.0 Vdc, f = 30
MHz)
IIC
= 5.0 Vde, IE = 0, f = 140 kHz)
= 0.5 Vdc, IC = 0, f = 140 kHz)
Input Impedance IIC = 1.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio IIC = 1.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
Small-Signal Current Gain IIC = 1.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz
Output Admittance IIC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure IIC = 10 pAdc, VCE = 5.0 Vdc, RS = 10 kG,
f = 100 Hz, BW = 20 Hz)
IIc = 10 pAdc, VCE = 5.0 Vdc, RS = 10 kll,
f = 1.0 kHz, SW = 200 Hz)
IIC = 10 pAdc, VCE = 5.0 Vde, RS = 10 kG,
f = 10 kHz, SW = 2.0 kHz)
IIC = 10 pAdc, VCE = 5.0 Vdc, RS = 10 kll,
f = 10 Hz to 15.7 kHz, SW = 15.7 kHz)
Output Capacitance
Input Capacitance
(VCS
(VSE
h re
-
hfe
150
hoe
NF
-
-
40
8.0
10
-
-
3.0
dB
-
-
2.0
-
-
3.0
(1) RIiJA is measured with the deVice soldered Into a typical printed CIrcUIt board.
(2) Pulse Test: Pulse Width"" 300 ,..., Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-44
-
2N2501
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3 Collector
"!~
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
PD
0.36
2.1
Watt
mW/"C
PD
1.2
6.9
Watts
mWrC
SWITCHING TRANSISTOR
TJ, Tstg
-65 to +200
"C
NPN SILICON
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Total Device Dissipation @ T C = 25"C
Derate above 25"C
Operating and Storage Junction
Temperature Range
Unit
1 EmItter
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 30 mAde, IB = 0, Pulsed)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lc = 10 !lAde, IE = 0)
V(BR)CBO
40
-
Emitter-Base Breakdown Voltage
(IE = 10 fLAdc, IC = 0)
V(BR)EBO
6.0
-
Vde
Collector Cutoff Current
(VCE = 20 Vde, VBE = 3.0 Vde)
ICEX
-
25
nAde
-
0.025
50
Characteristic
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 20 Vde, VBE
(VCE = 20 Vde, VBE
= 3.0 Vde)
= 3.0 Vde, TA =
IBL
150"C)
Vde
Vde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 100 fLAde, VCE = 1.0 Vde)
(lc = 1.0 mAde, VCE = 1.0 Vde)
(lc = 10 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde, TA
(lc = 50 mAde, VCE = 1.0 Vde)
(lc = 100 mAde, VCE = 1.0 Vde)
(lc = 500 mAde, VCE = 5.0 Vde)
hFE
20
30
50
20
40
30
10
= -55"C)
Collector-Emitter Saturation Voltage(1)
(IC = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
(lc = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = '1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
(lc = 100 mAde, IB = 10 mAde)
VBE(sat)
-
-
150
Vde
-
0.2
0.3
0.4
-
0,85
1.0
1.2
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 20 Vde, IC = 10 mAde, I = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
100 kHz)
Input Capacitance
(VEB = 0.5 Vde, IC
=
100 kHz)
0, f
=
Small-Signal Current Gain
(VCE = 20 Vde, IC = 10 mAde, f
=
350
-
MHz
Cobo
-
4.0
pF
Cibo
-
7.0
pF
hfe
3.5
-
-
IT
100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-45
II
2N2501
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Charge Storage Time Constant
(lC = IS1 = IS2 = 10 mAde)
TS
-
15
ns
Total Control Charge
(lc = 10 mAde, IS = 1.0 mAde)
aT
-
60
pC
Active Region Time Constant
(lc = 10 mAde)
TA
-
2.5
ns
(1) Pulse Test: Pulse Width", 300 fLS, Duty Cycle'" 2.0% .
•
COLLECTOR·tMITTER SATURATION VOLTAGES versus BASE CURRENT
0.7
Ie II. = 10
T, = 25°C
0.6
iii"
!::;
~
~
!::;
g
...""
..,~
0.5
\
t'...
0.4
ifr---
0
,j
"-
0.3
--
0.2
0.1
0.01
.Ie= 50mA
I'-Ie
Ie = 100mA
= 10mA
0.1
10
100
I•• BASE CURRENT (mAde)
BASE·EMITTER VOLTAGE
versus COLLECTOR CURRENT
TEMPERATURE COEFFICIENTS
1.0
2.0
iii"
!::;
1.6
...~
~
...""
!::
0
".
0.4
".
I
Ivcl2J to 100°C)
oS
is
1.2
'"Iii
111~iI.= to
~ 0.5
>
=
0.8
...:.!
II =
T, 25°C
lell, 10
::E
~
i
U
I-
r-V1CllooI
....~
........
Ivd-ttl
~-0.5
..,
im
2
I I 11111
o
l~llrllllllllllllllllll i00
'0
10
Ie. COLLECTOR CURRENT (mAde)
0
-
100
0.2
1
10
Ie. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-46
50
100
2N2501
COMMON EMITTER DC
LEAKAGE CHARACTERISTICS
ACTIVE REGION TIME CONSTANT
7.0
I~~I~ == 115v'
~ 6.0
I
~ 1.0
z
'"
~
~ 5.0
is 3.0
~
~
ti
""
1-<
!;l
t::::;?
~~
o
-0.5 -1.0
-1.5 -2.0 -2.5
Voa• BASE-£MITTER REVERSE BIAS (VOLTS)
\
~
;::
...
~
1.0
"""io"'"
lL
~
0.6
II
!;
e
Ii.
~ 0.4
\
"
1.2
rio-'''''
j
~
\
Ll
!
f"'..
/
~ 0.2
""
~
~-
o ~~
5
1
-3.0
1.0
:: 0.'
~
\
\
1.4
o
...c
1\
!;
II
2l c
FALL TIME FACTOR
~
\.6
J.
I
+0.5
lOa 200
10
2.0
:i
I0
Vr • THRESHOLD VOLTkE
T,
RISE TIME FACTOR
~ 1.8
r-
~
Ie. COLLECTOR CURRENT (mAde)
~
./
-
I
1.0
0.1
...c
100o C_
T,
0.005
a
;.
i
r
~0.01
r-....
1.0
I
0.1
~ 0.05
\
Vcc==3V
2.0
I
0.5
~
[\
:e
;::
T, =11500C
....~
....
o
~ 4.0
V",,_ +20 V
10.0
-ll 5.0
10
.02
20
.05
0.1
0.2
fJolfJ,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-47
0.5 1.0
fJolfJc
2.0
5.0
10
20
2N260S
JAN, JTX AVAILABLE
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6
Vdc
IC
30
mA
PD
400
2.28
mW
mWrC
TJ, Tstg
-65 to +200
·C
Collector Current - Continuous
~
Total Device Dissipation @ TA
Derate above 25·C
25·C
Operating and Storage Junction
Temperature Range
3
I
2
~()'1 Emitter
1
AMPLIFIER TRANSISTOR
PNPSILICON
Refer to 2N3798 for graphs.
~
ELECTRICAL CHARACTERISTICS (TA
25·C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
45
-
Vdc
V(BR)CBO
60
-
Vdc
6
-
Vdc
-
10
nA
.,-
10
10
nA
pA
lEBO
-
2
nA
hFE
100
150
300
-
600
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
~
~
10 mA (Pulse)
10 pA)
10 pA)
V(BR)EBO
45 V)
Base-Emitter Short Circuit Current
Emitter Cutoff Current (VBE
~
(IE
Emitter-Base Breakdown Voltage
Collector Cutoff Current (VCB
IC
~
(lC
Collector-Base Breakdown Voltage
ICBO
(VCE
(VCE
=
5.0 V)
5.0
5.0
5.0
5.0
V,
V,
V,
V,
~
~
45 V)
45 V, TA
~
'CES
170·C)
ON CHARACTERISTICS
DC Current Gain(l)
(VCE
(VCE
(VCE
(VCE
~
~
~
~
~
IC
IC
Ie
IC
~
~
~
10 pA)
500 pA)
10 mAl
10 pA, TA
=
-55·C)
-
20
-
-
Collector-Emitter Saturation Voltage
(lc = 10 mA, IB = 500 pA)
VC~sa!)
-
0.5
Vdc
Base-Emitter Saturation Voltage
=
VBE(sat)
0.7
0.9
Vdc
Cobo
(Ie
10 mA. 'B = 500 pA)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB
~
(VeE = 5.0 V, Ie
Input Impedance
(VCB
Voltage Feedback Ratio
~
Output Admittance
Noise Figure(2)
5.0 V, 'E
(VeB
Small-Signal Current Gain
pF
1.0 mA. I = 100 MHz)
hie
-
6
~
200
~
1.0 mA. 1= 1.0 kHz)
hib
25
35
n
n
5.0 V, 'E = 0, f
Input Impedance
~
5.0 V, 'E
~
~
1.0 MHz)
1.0 mA, I
~
1.0 kHz)
(VeB = 5.0 V, 'E = 1.0 mA. f = 1.0 kHz)
(VeB = 5.0 V, IC = 500 pA, f = 30 MHz)
(VeB = 5.0 V, 'E = 1.0 mA. 1= 1.0 kHz)
(VCB = 5.0 V, Ie
~
10 pA, Ra = 10 k n, BW
=
15.7 kHz)
hrb
-
10
10-4
hIe
150
1.0
SOO
-
hob
-
1
NF
-
3·
(1) Pulse Width"" 300 ~s, Duty Cycle"" 2.0%.
(2) Measured in amplilier with response down 3 dB at 10 Hz.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-48
-
~mho
dB
2N2800
CASE 79-02. STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
35
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current -
IC
800
mAdc
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Continuous
PD
0.8
4.57
Watt
mW/"C
SWITCHING TRANSISTOR
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
3.0
17.14
Watts
mW/"C
PNP SILICON
TJ, Tstg
-65 to +200
"C
Operating and Storage Junction
Temperature Range
•
Refer to 2N2904 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lc = 100 mAdc, IB = 0)
VCEO(sus)
35
Collector-Base Breakdown Voltage
(lc = 10 !!Adc, IE = 0)
V(BR)CBO
50
Emitter-Base Breakdown Voltage
(IE = 100 !!Adc, IC = 0)
V(BR)EBO
5.0
-
ICEX
-
100
nAde
IBL
-
100
nAde
20
30
15
25
-
-
-
0.4
1.2
-
1.3
1.8
120
-
-
25
pF
ns
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 25 Vde, VBE = 0.5 Vde Off)
Base Cutoff Current
(VCE = 25 Vde, VBE
= 0.5 Vde Off)
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lc = 0.1 mAde, VCE = 10 Vde)
(lc = 150 mAde, VCE = 10 Vde)(l)
(lC = 150 mAde, VCE = 1.0 Vde)(l)
(lC = 500 mAde, VCE = 10 Vde)(l)
hFE
Collector-Emitter Saturation Voltage
(lc = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
-
90
-
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, f
=
Cobo
MHz
100 kHz)
SWITCHING CHARACTERISTICS
Delay Time
td
9
25
Rise Time
tr
25
45
ns
Storage Time
ts
100
225
ns
Fall Time
tf
30
45
ns
(1) Pulse Test: Pulse Width", 300 iJS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-49
2N2894
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage(1)
VCEO
12
Vdc
Collector-Base Voltage
VCBO
12
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
200
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
PD
360
2.06
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
PD
1200
6.85
mW
mWrC
TJ, Tst9
-65 to +200
°c
Operating and Storage Junction
Temperature Range
SWITCHING TRANSISTOR
PNP SILICON
Reier to 2N869A lor graphs.
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
0)
V(BR)CES
12
VCEO(sus)
12
-
Vdc
0)
0)
V(BR)CBO
12
Vde
V(BR)EBO
4.0
-
ICBO
-
10
~de
ICES
-
80
nAde
IB
-
80
nAde
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
~
(lC
(IE
~
(lc
Collector-Emitter Sustaining Voltage(2)
~
10
100
~de,
(VCB
~
6.0 Vde, IE
Collector Cutoff Current
(VCE
~
6.0 Vde, VBE
(VCE
~
6.0 Vde, VBE
~
VBE
10 mAde, IB
~de,
Collector Cutoff Current
Base Current
~de,
10
~
~
IE
~
~
~
IC
~
0)
0, TA
~
125°C)
~
0)
0)
Vde
Vde
ON CHARACTERISTICS
DC Current Gain(2)
(lC ~ 10 mAde, VCE ~ 0.3 Vde)
(lC ~ 30 mAde, VCE ~ 0.5 Vde)
(lc ~ 30 mAde, VCE ~ 0.5 Vde, TA
(lC ~ 100 mAde, VCE ~ 1.0 Vde)(2)
-
hFE
~
30
40
17
25
-55°C)
Collector-Emitter Saturation Voltage(2)
(lC ~ 10 mAde, IB ~ 1.0 mAde)
(lC ~ 30 mAde, IB ~ 3.0 mAde)
(lC ~ 100 mAde, IB ~ 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(2)
(lC ~ 10 mAde, IB ~ 1.0 mAde)
(lC ~ 30 mAde, IB ~ 3.0 mAde)
(lC ~ 100 mAde, IB ~ 10 mAde)
VBE(sat)
-
150
Vde
0.15
0.2
0.5
Vde
0.78
0.85
-
0.98
1.2
1.7
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 30 mAde, VCE ~ 10 Vde, I ~ 100 MHz)
Output Capacitance
(VCB ~ 5.0 Vde, IE
~
Input Capacitance
(VBE ~ -0.5 Vde, IC
0, f
~
~
0, I
400
-
Cobo
-
6.0
pF
Cibo
-
6.0
pF
ton
-
60
ns
toff
-
90
ns
fT
MHz
140 kHz)
~
140 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(Vce ~ 2.0 Vdc, VBE
~
Turn-Off Time
(Vee ~ 2.0 Vde, Ie
30 mAde, IB1
~
3.0 Vdc, IC
~
~
30 mAde, IBI
IB2
~
~
1.5 mAde)
1.5 mAde)
(1) Applicable from 0.01 to 10 mAde.
(2) Pulse Test: Pulse Width ~ 300 )J.s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-50
2N2895
2N2896
2N2897
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
2N2895
2N2896
2N2897
Unit
VCEO
65
90
45
Vde
Collector-Emitter Voltage
VCER
80
140
60
Vde
Collector-Base Voltage
VCBO
120
140
60
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
IC
1.0
Ade
0.5
2.86
Watt
mWI"r:,
1.8
10.3
Watts
mWI"C
-65 to +200
°c
Collector Current -
Continuous
Total Device Dissipation
@TA=25°C
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3
/I ":~«s~m
1 Emitter
2
1
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 100 mAde, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage(1)
(Ie = 100 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
V(BR)CES
2N2895
2N2896
2N2897
80
140
60
VCEO(sus)
2N2895
2N2896
2N2897
65
90
45
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde, IC = 0)
120
140
60
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vde, IC = 0)
ICBO
2N2895
2N2896
2N2897
-
-
-
7.0
-
-
-
2N2895
2N2897
-
2.0
50
(VCB = 90 Vde, IE = 0)
(VCB = 90 Vde, IE = 0, TA = + 150°CI
2N2896
2N2896
-
0.01
10
-
0.005
0.01
0.05
lEBO
-
Vde
!tAde
(VCB = 60 Vde, IE = 0, TA = + 150°C)
2N2895
2N2896
2N2897
Vde
-
0.002
0.Q1
0.05
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
Vde
Vde
V(BR)CBO
2N2895
2N2896
2N2897
-
!tAde
ON CHARACTERISTICS
DC Current Gain
(lC = 10 !tAde, VCE = 10 Vdel
(lC = 100 !tAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vdel
(lC = 10 mAde, VCE = 10 Vde, TA = -55°C)
hFE
2N2895
2N2895
2N2896, 2N2897
2N2895
2N2895, 2N2896
10
20
35
35
20
-
(lC = 150 mAde, VCE = 10 Vde)(1)
2N2895
2N2896
2N2897
40
60
50
120
200
200
(lC = 500 mAde, VCE = 10 Vde)(1)
2N2895
25
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-51
-
II
2N2895,2N2896,2N2897
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted)
Characteristic
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAdc, IB = 15 mAdc)
Symbol
VCE(sat)
2N2895, 2N2896
2N2897
Base-Emitter Saturation Voltage(1)
(lC = 150 mAdc, IB = 15 mAdc)
Min
-
VBE(sat)
2N2895, 2N2896
2N2897
Max
Unit
Vdc
0.6
1.0
Vdc
-
1.2
1.3
120
100
-
-
SMAU-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
II
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f = 100 kHz)
2N2895, 2N2896
2N2897
tr
Cobo
= 100 kHz)
Small-Signal Current Gain
(lc = 6.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(lC = 0.3 mAdc, VCE = 10 Vdc, RS = 500 ohms.
f = 1.0 kHz, BW = 15 kHz)
(1) Pulse Test: Pulse Width", 300
p.s,
Cibo
MHz
-
-
15
pF
80
pF
50
50
200
275
hfe
2N2895
2N2896, 2N2897
NF
2N2895
Duty Cycle'" 1.8%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-52
dB
-
8.0
2N2904,A,2N290S,A,
2N2906,A, 2N2907,A,
2N348S,A, 2N3486,A
MAXIMUM RATINGS
Rating
I
I
JAN, JTX, JTXV AVAILABLE*
A-Suffix
Unit
60
Vde
Symbol
Non-A Suffix
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
600
mAde
Collector Current -
Continuous
IC
CASE 79-02. STYLE 1
"H~i~ ,ro:-Es5'~'O'
2N2904.A 2N2906.A 2N3485.A
2N2905.A 2N2907.A 2N3486.A
Total Device Dissipation
@TA ~ 25'C
Derate above 25'C
PD
Total Device Dissipation
@ TC ~ 25'C
PD
2N290612907 TO-18
(TO-206AA)
Derate above 25°C
Operating and Storage Junction
Temperature Range
600
3.43
400
2.28
400
2.28
mW
mWrC
3.0
17.2
1.8
10.3
2.0
11.43
Watts
mWrC
-65 to +200
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
21
CASE 22-03. STYLE 1
! I
3 2
1 Em'1ter
CASE 26-03. STYLE 1
2N348513486 TO-46 (TO-206AB)
3 2
1
GENERAL PURPOSE TRANSISTOR
'c
PNP SILICON
~ 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC ~ 10 mAde, IB ~ 0)
Emitter-Base Breakdown Voltage (IE
Collector Cutoff CUrrent (VCE
~
~
10 /LAde, IE
10 /LAde, IC
30 Vde, VBE
Collector Cutoff Current
(VCB ~ 50 Vde. IE ~ 0)
~
40
60
-
~
~
~
0)
0)
V(BR)CBO
60
-
V(BR)EBO
5.0
-
0.5 Vde)
-
ICEX
ICBO
(VCB ~ 50 Vde, IE ~ 0, TA ~ 150'C)
Base Current (VCE
Vde
V(BR)CEO
Non-A Suffix
A-Suffix
~
Collector-Base Breakdown Voltage (lC
30 Vde, VBE
~
-
50
-
-
0.02
0.Q1
Non-A Suffix
A-Suffix
-
-
20
10
-
50
0.5 Vde)
-
IB
Vde
nAde
!LAde
Non-A Suffix
A-Suffix
-
Vde
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC ~ 0.1 mAde, VCE ~ 10 Vde)
-
hFE
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A. 2N3485A
2N2905A, 2N2907A, 2N3486A
20
35
40
75
-
-
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A. 2N3485A
2N2905A. 2N2907A. 2N3486A
25
50
40
100
-
-
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A, 2N2906A, 2N3485A
2N2905A. 2N2907 A, 2N3486A
35
75
40
100
-
-
-
(lc ~ 150 mAde, VCE ~ 10 Vdel(1)
2N2904A. 2N2906A, 2N3485A
2N2905A. 2N2907A, 2N3486A
40
100
-
120
300
(lc ~ 500 mAde, VCE ~ 10 Vdel(1)
2N2904, 2N2906, 2N3485
2N2905, 2N2907, 2N3486
2N2904A. 2N2906A. 2N3485A
2N2905A. 2N2907 A, 2N3486A
20
30
40
50
-
-
(lC ~ 1.0 mAde, VCE ~ 10 Vde)
(lc
~
10 mAde, VCE
~
10 Vdc)
•
1
/iALSO AVAILABLE 2N2905AWANS AND 2N2907AJANS
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-53
-
-
-
I
2N2904,A, 2N2905,A, 2N2906,A, 2N2907,A, 2N3485,A, 2N3486,A
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25"C unless otherwise noted)
Symbol
Characteristic
Collector-Emitter Saturation Voltage(l)
(lC ~ 150 mAde, IB ~ 15 mAde)
(lC ~ 500 mAde, IB ~ 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc ~ 150 mAde, IB ~ 15 mAde)(l)
(lc ~ 500 mAde, IB ~ 50 mAde)
VBE(sat)
Min
Typ
Max
Unit
Vde
-
-
0.4
1.6
-
-
1.3
2.6
IT
200
-
-
Cobo
-
-
8.0
pF
Cibo
-
-
30
pF
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC ~ 50 mAde, VCE ~ 20 Vde, f ~ 100 MHz)
•
Output Capaeitanel>
(VCB ~ 10 Vde, IE ~ 0, f ~
Hio kHz)
Input Capacitance
(VBE ~ 2.0 Vde, IC
100 kHz)
~
~
0, f
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC ~ 30 Vde, IC
IBI ~ 15 mAde)
Delay Time
~
tr
-
toff
-
td
Rise Time
Turn-Off Time
(VCC ~ 6.0 Vde, IC ~ 150 mAde,
IBI ~ IB2 ~ 15 mAde)
Storage Time
-
ton
150 mAde,
-
ts
Fall Time
tf
26
45
ns
6.0
10
ns
20
40
ns
70
100
ns
50
80
ns
20
30
ns
(1) Pulse Test: Pulse W,dth '" 300 !Ls, Duty Cycle'" 2.0.%
(2) IT is defined as the frequency at which Ihfel extrapolates to unity.
NORMALIZED DC CURRENT GAIN
"ON" VOLTAGE
II II
II II
II 11111 II I
TJI =117~~C
_-!o'!!., = TOV
;i7ii-
1.25
u
II I
10
~
b
~ 075
13'"
~
~
~5~C
Hi-"
\
II
0.5
'"
':
....
0.25
VCE(sl @ ICIIB = 10
..\
II
10
100
IC. COLLECTOR CURRENT (mAl
1111
1.0
500
CAPACITANCE
25
b::
VBE( sl @ ICIIB = 20
w
II
2:;~
11111111
VBE(s) @ ICIIB = 10
in
1T
'"
II I 11111111
= 10 V
JJ..
+tItti1
10
100
IC. COllECTOR CURRENT (mAl
500
CURRENT GAIN-BANDWIDTH PRODUCT
t; 500
11111111
=>
'"'"
if
TJ = 25°C
20
400
~
3:
COBO
~ 300
1\
;;Ii
~
;;!. 200
z
<1
'"
15
CIBO
il§
Jill
100
VCE = 200 V
a
pm
ftl lO
,t:;
1111
10
REVERSE VOLTAGE (VOLTSI
15
10
20
20
30
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-54
40
2N2904,A, 2N2905,A, 2N2906,A, 2N2907,A, 2N3485,A, 2N3486,A
CURRENT GAIN -
BANDWIDTH PRODUCT
I-VCE ~ 26 Vi
1-1: 100 MHz
~
~
t;
2:
~ 500
i 400
i il
~
i
300
200
i-'
100
-
0V
.e
10
20
IC. COLLECTOR CURRENT (mAl
1
30
•
TURN ON BEHAVIOR
45
I
~
'"
35
r--.
.........
~ 25
Q
r-- I-
Q
:i
;
1.
15
-
r-
-
tr
I""'-r-.
5
lei
25
50
75
Ie. COLLECTOR CURRENT (mAl
125
100
150
TURN OFF BEHAVIOR
200
!:::;;
150
~
100
;::
Is
t- r-- t.......
Q
z:
c<
w
c<
'"
a:
lji
.,;.
~
40
"-
I'
20
II
25
50
75
Ie. COLLECTOR CURRENT (mAl
DELAY AND RISE
TIME TEST CIRCUIT
100
125
STORAGE AND FALL
TIME TEST CIRCUIT
-30
+15V
INPUT
Zo=50n
PRF =150 PPS
RISE TIME" 2.0 ns
-6.0
INPUT
Zo =50 n
PRF = 150 PPS
RISE TIME" 2.0 '"
1.0 k
O_lJ
-J200n.L
150
1.0 k
TO OSCI LLOSCOPE
RISE TIME" 5.0
TO OSCI LLOSCOPE
RISE TIME" 5.0 n.
n.
50
50
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-55
lN916
2N2945
2N2946
MAXIMUM RATINGS
Symbol
2N2945
2N2946
Unit
Emitter-Collector Voltage
Rating
VECO
20
35
Vdc
Collector-Base Voltage
VCBO
25
40
Vdc
Emitter-Base Voltage
VEBO
25
40
Collector Current - Continuous
•
Vdc
IC
100
Adc
Total Device Dissipation @TA
Derate above 25'C
= 25'C
Po
400
2.3
mW
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
2.0
11.43
Watts
mWI'C
TJ, Tstg
-65 to +200
'c
Operating and Storage Junction
Temperature Range
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
3/ ~()"~"
2
1
1 EmItter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RfiJC
87.5
'CfW
Thermal Resistance, Junction to Ambient
ROJA
435
'CfW
Characteristic
TRANSISTOR
PNPSIUCON
Refer to 2N2944A lor graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
-
0.2
0.5
-
-
-
-
0.2
0.5
40
30
160
130
-
4.0
3.0
17
15
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCS = 25 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
2N2945
2N2946
Emitter Cutoff Current
(VES = 25 Vdc, IC = 0)
(VES = 40 Vdc, IC = 0)
2N2945
2N2946
ICBO
lEBO
nAdc
nAdc
ON CHARACTERISTICS
~FE
DC Current Gain
(lC = 1.0 mAde, VCE = 0.5 Vdc)
2N2945
2N2946
"DC Current Gain (Inverted Connection)
(lB = 200 I-'Adc, VEC = 0.5 Vdc)
Offset Voltage
(IS = 200 !-
~
~ -0.8
~
~
-1.6
+25°C TO +150°C
II
z
II
IIIII
=
=
4.0
RS 4.3 kO
IC 10 jlA
w
l!l
II II
0.5
II
eVBB FOR VBE
-55°C TO +25°C
t-
~ 2.0
I
I
11111
1.0
10.0
50 100
IC. COLLECTOR CURRENT (rnA)
=
=
'"tri'
Re 1.0
Ic 100 /lA
500 1000
0.1
--
1.0
10
f. FREOUENCY (kHz)
100
CURRENT GAIN BANDWIDTH PRODUCT versus
COLLECTOR CURRENT - 1 kHz hfe
SOURCE RESISTANCE EFFECTS
14.0 "'...,....,-=m...,....,-"T"nTmr....TTTmrr-TTO"TTT""'fL'T.ll'T.J"
.WI.'TTT11
z
l-++-+++-I++Il--H--+1-H+lll--f+-+-H-+++lI-++-++++lHI VCE = 10 V
12.0
1\
"\
2N3019
2N3700
100
-
TA = 25°C
1-2N3020
~ 10.0
IC = 100 /lA
w
'"=>
~
w
l!l
'"u:
'"
8.0
6.0
4.0
2.0
0Lf-l--l-l..l..l~~c...U..lJ.·111!,:":-:!-,11~~
0.1
1.0
10.0
100.0
1000.0
o
CURRENT GAIN -
10
1.0
IC COLLECTOR CURRENT (rnA de)
0.1
RS. SOURCE RESISTANCE (k OHMS)
BANDWIDTH PRODUCT
ACTIVE REGION SAFE OPERATING AREA
1000
5.0rnS=
200
t ..
¥
~
.,!:-
"{
1.0"rn~m
500 ",
..
40
deTO·1B·
10
1
0.1
00 1
1.0
10
100
IC. COLLECTOR CURRENT (MAO C)
de TO·39
1.0 V
10 V
VCE. COLLECTOR·EMITIER VOLTAGE (V)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-67
I
100 V
•
MAXIMUM RATINGS
Rating
Symbol
VCEO
40
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
5.0
Collector Current -
Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
•
2N3053 2N3053A
Collector-Emitter Voltage(l)
lead Temperature 1/16", ± 1/32' From
Case for 10 s
2N3053,A
Unit
60
Vde
80
CASE 79·02, STYLE 1
TO-39 (TO-205AD)
Vde
Vde
IC
700
mAde
PD
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Tl
+235
°c
THERMAL CHARACTERISTICS
Characteristic
GENERAL PURPOSE TRANSISTOR
Thermal Resistance, Junction to Case
NPN SILICON
(1) Applicable 0 to 100 mA (Pulsed):
Pulse Width", 300 ""ee., Duty Cycle'" 2.0%.
o to 700 mA; Pulse Width", 10 ""ee., Duty Cycle'" 2.0%.
ELECTRICAL CHARACTERISTICS (TA
Refar to 2N3019 for graphs.
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 100 !LAde, IB = 0)
Collector-Emitter Breakdown Voltage(2)
(lC = 100 mAde, RBE = 10 ohms)
Collector Cutoff Current
(VCE = 30 Vde, VBE(off)
(VCE = 60 Vde, VBE(offJ
=
=
-
50
70
-
60
80
-
Vde
-
Vde
V(BR)CBO
2N3053
2N3053A
=
(IE
100 !LAde, IC
= 0)
V(BRlEBO
5.0
-
Vde
ICEX
-
0.25
!LAde
lEBO
-
0.25
!LAde
IBl
-
0.25
!LAde
hFE
25
50
-
-
250
-
1.4
0.3
2N3053
2N3053A
1.5 Vde)
1.6 Vde)
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
Base Cutoff Current
(VCE = 60 Vde, VBE(off)
40
60
V(BR)CER
2N3053
2N3053A
Collector-Base Breakdown Voltage
(lC = 100 !LAde, IE = 0)
Emitter-Base Breakdown Voltage
Vde
V(BR)CEO
2N3053
2N3053A
2N3053
=
2N3053A
1.5 Vde)
ON CHARACTERISTICS(1)
DC Current Gain
(lc
(lc
=
=
=
=
150 mAde, VCE
150 mAde, VCE
2.5 Vde)
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
2N3053
2N3053A
Base-Emitter Saturation Voltage
(Ie = 150 mAde, IB = 15 mAde)
VBE(sat)
2N3053
2N3053A
Base-Emitter On Voltage
(lc = 150 mAde, VCE = 2.5 Vde)
VBE(on)
2N3053
2N3053A
Vde
Vde
0.6
1.7
1.0
-
1.7
1.0
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
=
= 50 mAde, VCE =
= 0, f = 140 kHzl
= 0, f = 140 kHz)
(lC
10 Vde, f
10 Vde, IE
= 0.5 Vde,
IC
= 20 MHz)
100
-
Cobo
-
15
pF
Cibo
-
80
pF
tr
(2) Pulse Test: Pulse Width", 300 "", Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-68
MHz
2N3073
CASE 22·03, STYLE 1
TO·18 (TO·206AA)
3 Collector
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vde
Collector-Base Voltage
VCBO
60
Vde
VEBO
4.0
Vde
IC
500
mAde
PD
360
2.06
mW
mWrC
1.2
6.85
mWrC
-65 to +200
°c
Rating
Emitter-Base Voltage
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
~.{Q
, Emitter
II
SWITCHING TRANSISTOR
Watts
PNP SILICON
Refer to 2N2904 lor graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage( 1) (lc = 30 mAde, IB = 0)
V(BR)CEO
60
Collector-Base Breakdown Voltage
V(BR)CBO
60
V(BRIEBO
4.0
-
-
10
10
nAde
!JAde
-
100
!JAde
10
nAde
30
12
15
130
-
0.25
1.0
-
1.2
2.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lc = 100 !JAde, IE = 0)
(IE = 100 !JAde, IC = 0)
(VCE = 30 Vde, VBE = 0)
(VCE = 30 Vde, VBE = 0, TA = 125°C)
ICES
(VEB = 4.0 Vde, IC = 0)
lEBO
Base Current (VCE = 30 Vde, VBE = 0)
IB
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain(l)
(lc = 50 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde, TA = -55°CI
(IC = 300 mAde, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 2.5 mAde)
(lC = 300 mAde, IB = 30 mAde)
-
hFE
VCE(sat)
Vde
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
(lC = 50 mAde, IB = 2.5 mAde)
(lC = 300 mAde, IB = 30 mAde)
VBE(sat)
(lC = 50 mAde, VCE = 1.0 Vde)
VBE(on)
-
Vde
1.2
Vde
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = SO mAde, VCE = 20 Vde, I = 100 MHz)
fr
130
Input Impedance
(lC = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
hie
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
h re
-
Small Signal Current Gain
(lC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
hie
25
180
-
Output Admittance
(lC = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
hoe
-
1200
"mhos
Output Capacitance
(VCB = 10 Vde, IE = 0, I = 140 kHz)
Cobo
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-69
10
pF
I.S
kohms
26
X 10-4
2N3073
ELECTRICAL CHARACTERISTICS (continued) (TA
= 2SoC unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
ton
-
40
ns
toff
-
100
ns
SWITCHING CHARACTERISTICS
Turn-On Time
(lC~300 mAde,
IB1~30
mAde)
Turn-Off Time
(lC~300 mAde,IB1~IB2~30
mAde)
(1) Pulse Test: Pulse Width", 300 p.S, Duty Cycle'" 1.0%.
(2) t,. is defined as the frequency at which Ihfel extrapolates to unity.
•
FIGURE 1 - TURN-ON AND TURN-OFF SWITCHING TIMES TEST CIRCUIT
PULSE GENERATOR
0.1 ~f
,,"":u-11-----+-~
tf ""'- 6 0 ns
pw" 0.5 ~s
Zlll = 50~!
fr,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-70
2N3114
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
,iii
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage(l)
VCEO
150
Vde
Collector-Base Voltage
VCBO
150
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Rating
IC
200
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0.8
4.57
Watt
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
~![
~,~"~"'
1 Emmer
AMPLIFIER TRANSISTOR
NPN SILICON
Refer to 2N3498 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lC = = 30 mAde, IB = 0)
V(BR)CEO
150
-
Vde
Collect\lr-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
150
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 100 Vde, IE = 0)
(VCB = 100 Vde, IE = 0, TA = 150°C)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
pAde
-
-
0.010
10
-
0.10
pAde
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde, TA = -55°C)
hFE
-
15
30
12
120
-
-
Collector-Emitter Saturation Voltage(2)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
-
1.0
Vde
Base-Emitter Saturation Voltage(2)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.9
Vde
Output Capacitance
(VCB = 20 Vde, IE = 0, I = 140 kHz)
Cobo
-
9.0
pF
Input Capacitance
(VEB = 0.5 Vde, IC
Cibo
-
80
pF
SMALL-SIGNAL CHARACTERISTICS
=
0, I
=
140 kHz)
Small-Signal Current Gain
(lC = 1.0 mA, VCE = 5.0 V, 1= 1 kHz)
hie
25
-
Current Gain - High Frequency
(VCE = 10 Vde, IC = 30 mAde, 1 = 20 MHz)
Ihlel
2.0
-
-
-
30
Ohms
Real Part 01 Input Impedance
(lc = 10 rnA. VCE = 10 V, 1 = 100 MHz)
Re(hie)
(1) Between 0 and 30 rnA.
(2) Pulse Test: Pulse Width", 300 /JS, Duty Cycle'" 1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-71
•
2N3135
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
3 Collector
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
35
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
600
rnA
Total Device Dissipation @ TA = 25°(:
Derate above 25°C
Po
0.4
2.28
Watt
mWI'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.8
10.3
Watts
mWI'C
TJ, Tstg
-65to +200
°C
Rating
•
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
":~
1 Emitter
I
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N2904 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(1}
(lc = 10 mAde, IB = O)
V(BR}CEO
35
-
Vdc
Collector-Base Breakdown Voltage
(lc = 10 !lAde, IE = O)
V(BR}CBO
50
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = O)
V(BR}EBO
4.0
-
Vdc
-
0.1
!lAde
-
0.05
30
-
0.1
25
40
120
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 V, VBE = 0.5 V)
ICEX
Collector Cutoff Current
(VCB = 30 Vdc, IE = O)
(VCB = 30 Vdc, IE = 0, TA
ICBO
Base Cutoff Cu rrent
(VCE = 30 V, VBE
=
150°C)
IBL
= 0.5 V)
!LAde
!lAde
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAde, VCE = 10 Vdc)
(lC = 150 mAde, VCE = 10 Vdc)(1}
-
hFE
Collector-Emitter Saturation Voltage(1}
(lC = 150 mAde, IB = 15 mAde)
VCE(sat}
-
0.6
Vdc
Base-Emftter Saturation Voltage(1}
(lC = 150 mAde, IS = 15 mAde)
VBE(sat}
-
1.5
Vdc
IT
200
-
MHz
Cobo
-
10
pF
Cibo
-
40
pF
ton
26
75
ns
toff
70
150
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCS = 10 Vdc, IE
Input Capacitance
(VSE = 2 Vdc, IC
=
0, f
=
= 0, f =
100 kHz)
100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 V, IC
Turn-Off Time
(VCC = 6.0 V, IC
=
=
150 mA, IB1
150 mA, IS1
=
15 rnA)
=
IS2
=
15 mAl
(1) Pulse Test: Pulse Width", 300 ",s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-72
2N3227
For Specifications, See 2N2368 Data.
2N3244
2N3245
MAXIMUM RATINGS
Symbol
2N3244
2N3245
Unit
Collector-Emitter Voltage
Rating
VCEO
40
50
Vde
Collector-Base Voltage
VCBO
40
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
1.0
5.71
Watt
mWI"C
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
5.0
28.6
Watts
mWI"C
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
CASE 79-02. STYLE 1
TO-39 (TO-205AD)
•
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
R/lJC
35
°CIW
Thermal Resistance, Junction to Ambient
R/IJA
0.175
"C/mW
ELECTRICAL CHARACTERISTICS (TA
PNP SILICON
~ 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lc ~ 10 mAde, IB ~ 0)
Collector-Base Breakdown Voltage
(lC ~ 10 ~de, IE ~ 0)
Vde
V(BR)CEO
2N3244
2N3245
40
50
V(BR)CBO
2N3244
2N3245
40
50
-
-
Vde
5.0
-
Vde
IBEV
-
80
nAde
Collector Cutoff Current
(VCE ~ 30 Vde, VBE ~ 3.0 Vde)
ICEX
-
50
nAde
Collector Cutoff Current
(VCB ~ 30 Vde, IE ~ 0)
(VCB ~ 30 Vde, IE ~ 0, TA
ICBO
Emitter-Base Breakdown Voltage
(IE ~ 10 ~de, IC ~ 0)
Base Cutoff Current
(VCE ~ 30 Vde, VBE
~
V(BR)EBO
3.0 Vde)
~
100"C)
Emitter Cutoff Current
(VEB ~ 3.0 Vde, IC ~ 0)
(VEB ~ 4.0 Vde, IC ~ 0)
lEBO
2N3245
2N3244
-
~de
0.050
10
nAde
30
30
ON CHARACTERISTICS
DC Current Gain(1)
(lc ~ 150 mAde, VCE
(lc
~
500 mAde, VCE
(lc
~
1.0 Ade, VCE
~
hFE
~
1.0 Vde)
2N3244
2N3245
60
35
-
~
1.0 Vde)
2N3244
2N3245
50
30
150
90
2N3244
2N3245
25
20
-
5.0 Vde)
Collector-Emitter Saturation Voltage(1)
(IC ~ 150 mAde, IB ~ 15 mAde)
(lc
~
500 mAde, IB
(lC
~
1.0 Ade, IB
~
~
50 mAde)
100 mAde)
VCE(sat)
2N3244
2N3245
2N3244
2N3245
2N3244
2N3245
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-73
-
Vde
-
-
0.3
0.35
0.5
0.6
1.0
1.2
2N3244, 2N3245
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
Symbol
Characteristic
Base-Emitter Saturation Voltage(1)
(lc = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
(lc = 1.0 Adc, IB = 100 mAde)
Min
Max
Unit
Vdc
VBE(sat)
0.75
-
1.1
1.5
2.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE = 10 Vdc, f = 100 MHz)
•
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
= 0, f =
100 kHz)
tr
2N3244
2N3245
MHz
175
150
-
Cobo
-
25
pF
Cibo
-
100
pF
td
-
15
ns
tr
35
40
ns
ts
-
140
120
ns
tf
-
-
SWITCHING CHARACTERISTICS
Delay Time
(lC = 500 mA, IB1
VEB = 2.0 V, VCC
Rise Time
Storage Time
(lc
IBl
Fall Time
= 50 mA
= 30 V)
2N3244
2N3245
= 500 mA, VCC = 30 V
= IB2 = 50 mAl
Total Control Charge
(lC = 500 mA, IB = 50 mA, VCC
2N3244
2N3245
= 30 V)
C1r
2N3244
2N3245
45
ns
pC
-
14
12
(1) Pulse Test: PW", 300 "s,Duty Cycle'" 2.0%.
FIGURE 1 - MINIMUM CURRENT GAIN CHARACTERISTICS
2.0
-
12S0C
I.S
I
7SoC
:-.;
2SOC
.,! 1.0
..
I:j
............ 1"...'"
Z
SSOC
O.S
0.2
SO
I
"
,,-
:::;
~
o
-
";:::.~
I
IV _
I-2V
...~. "2~oC-1-r-...."'"
~ .:\. l''-/II;~
ISOC
Q
--.
I
100
200
Ie, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-74
SOO
~ l~~
I
~
1000
2N3244,2N3245
FIGURE 2 - COLLECTOR·EMITTER SATURATION VOLTAGE CHARACTERISTICS
~
1.4
~
~
1.2
'"
~
1.0
g
~
0.8
~
g
Ie = 150 mA
Ic =50mA
0.6
~
~ 0.4
~
1.4
~
.~
1.2
IE
1.0
2.0
1.0
I'..
""- r-......
---
t-
t--..
0.2
0.5
10
I,. BASE CURRENT (mAl
5.0
...... 1'--
r--.
20
100
50
>
I
50 mA
150 mA
i
~
0.6
~
~
r----..
-I-
"- ......
"-
~ 0.4
1'&
............
\
~
....
"'-
\
!d
'\ ~50mA
\500 mA
\
0.8
"'0'"
II
200
2N3245 TJ = 25°C -
~
:=
-
\\Ic= 750mA
\
"'- t-....
~
1'&
Ie = 500mA
\
\
~
::j
8
TJ2!3~~!C
1\
r--
0.2
0.5
1.0
2.0
5.0
10
I,. BASE CURRENT (mAl
20
50
100
FIGURE 4 - TYPICAL TEMPERATURE COEFFICIENTS
FIGURE 3 - MAXIMUM SATURATION VOLTAGES
,-
2.0
I
f- tf- I-
1.6
I
.1
fj.= 10
TJ = 25°C
..~
I-
--
,.,
(25 to 125°CI
./
V1E /
u
°~
~ I-- VeE! .. ,]
o
50
-0.5 ~-J.--+-+-+--1b-+---F:"'d--I~
....
§15
-1.0
2N3245 ...... 1-::::
0.4
o
~
u
2N3244
-1.5 h-.q.-=-~==-'
-2L-~
100
200
200
500
Ie. COllECTOR CURRENT (mAl
a
1000
__~~__~__~~__~~__~-J
200
400
600
Ie. COLLECTOR CURRENT LImA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-75
800
1000
2N3244,2N3245
FIGURE 5 - JUNCTION CAPACITANCE
200
100
---
FIGURE 6 - TYPICAL SWITCHING TIMES
180
= 25°C
TJ
140
120
C.,
g
.....
~~
~
~
20
•
;::
I"""-
C.,
~.
0.2
0.5
#.= 10
...
t'--- 1-_
TJ == 25°C
Vee
JOV
#.
P.
80
Vee JOV
V.. 2V
T,
25°C
I.
I"
10
JO
tOO
40
....
1.0
2.0
5.0
REVERSE BIAS (VOLTS)
20
JO -
#.
20
10
~.
........
20
t,,-P.
10
20
100
JO
1"
IP.
10
200
JOO
400
600
Ie. COLLECTOR CURRENT (mA)
FIGURE 8 - TURN-ON EQUIVALENT TEST CIRCUIT
+2V1f
0-
Q,2NJ244
--LIMIT
- - TYPICAL
~.
60
FIGURE 7 - CHARGE DATA
10
~
o
10
0.1
20
t,
160
MAX-TYP - - -
...... -:::.
-JOV
-
590
Q,
50
~
L,..ot:::
-10.75 V
Q,2NJ244
~
~ P"
1.0
2000
PW;;:; 200 ns
RISE TIME -6. 2 ns
Q,2NJ24~~
Q,2NJ245
10'
2.0
SCOPE
... ...
DUTY CYCLE = 2%
,.
Q,
.5
50
1000
500
200
100
Ie> COLLECTOR CURRENT (rnA)
IfrfJ L
FIGURE 9 - TURN·OFF EQUIVALENT TEST CIRCUIT
FIGURE 10 - Qr TEST CIRCUIT
85V
o
--
I
I
1-1
-11.5 V
1~t.~'1
DUTY CYCLE = 2%
-JOV
10
< tl < 500.us
t2
<5n5
tl >l",s
590
-11l
SCOPE
2000
.J
1N916
1... 10 ••
DUTY CYCLE = 2%
+3V
FIGURE 11 - TURN·OFF WAVEFORM
~-~~
C_Co~
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-76
1200 pf max for 2N3245
1400 pf max for 2N3244
800
2N3249
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
til .:_()""'.'
311
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
12
Vde
Collector-Base Voltage
VCBO
15
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mA
PD
0.36
2.06
mW/oC
1.2
6.9
mWrC
-65 to +200
°c
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
•
Hm,tt.,
Watt
SWITCHING TRANSISTOR
Watts
PNPSILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
12
-
Vde
Collector-Base Breakdown Voltage
(lc = 10 !lAde, IE = 0)
V(BR)CBO
15
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
5.0
-
Vde
-
50
-
0.05
5.0
100
100
100
75
35
300
Characteristic
OFF CHARACTERISTICS
Base Cutoff Cu rrent
(VCE = 10 Vde, VBE
=
'BEV
nAde
1.0 Vde)
Collector Cutoff Current
(VCE = 10 Vde, VBE = 1.0 Vde)
(VCE = 10 Vde, VBE = 1.0 Vde, TA
'CEX
=
,.Ade
-
100°C)
.
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 0.1 mAde, VCE = 1.0 Vde)
(lC = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
(lc = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
(lc = 100 mAde, IB = 10 mAde)
VBE(sat)
-
-
Vde
-
-
0.125
0.25
0.45
Vde
0.6
0.7
0.9
1.1
1.3
tr
300
-
Cobo
-
8.0
pF
Cibo
-
8.0
pF
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 20 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
=
0, f
=
100 kHz)
Input Capacitance
(VBE = 1.0 Vde, IC
=
0, f
=
100 kHz)
MOTOROLA SEMICONDUCTORS
MHz
SMALL-SIGNAL DEVICES
4-77
2N3249
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°e unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
td
-
5.0
ns
tr
-
15
ns
ts
-
60
ns
tf
20
ns
90
ns
SWITCHING CHARACTERISTICS
Ie = 100 rnA. Is = 10 rnA,
VSE = 0.5 V, Vee = 10 V
Delay Time
Rise Time
Ie = 100 rnA. lSI
Vee = 10 V
Storage Time
•
=
IS2
=
10 rnA,
Turn-On Time
Ie = 10 mA,ISl = 1.0 rnA,
VSE = 0.5 V, Vee = 3.0 V
ton
-
Turn-Off Time
Ie = 10 rnA, IS1
VCC = 3.0V
toff
-
100
ns
QT
-
150
pC
Fall Time
Total Control Charge
(lC = 10 rnA, IS = 0.25 rnA, Vee
(1) Pulse Test: Pulse Width
=
=
IS2
1.0 rnA,
= 3.0 V)
= 300 p,s,
Duty Cycle'" 2.0%.
FIGURE 1 - t.., CIRCUIT
vc:c: .....Wo...--,
V~3Er-D
v,
..j
Re
R,
I- 300 •• =2%
FIGURE 3 - TYPICAL SWITCHING TIMES
~:cs
,
__ A
200
DUTY CYCLE
~ t'-..
100
,
Ilel=IOII"ll~LI
T,
FIGURE 2 - 1... CIRCUIT
~
vcco-...",,\/Ioo--,
..
Ie
Vee
mA
volt.
10
100
3
10
.
II,
ohm.
10K
IK
lie
ohms
285
95
t, (3 V)
-
-
V,
t:"
V,
V,
volts
volts
volts
volts
4
+0.5
+0.5
-10.6
-10.7
-10,9
-11.3
+9.1
+8.7
12
V..
~ ~ ~ ~ ...
---I
pF
eSl-t -
.!'~O V)
~
-1_
'T' cs
, ,.
25°C
t,
50
R,
0.5 V
3 V, VIlE
Vee
2
I
20
10
50
100
Ie, COLLECTOR CURRENT (mA)
Total ......., eapadtaKe of lest jl. and COIIItKlOI'I•
FIGURE 4 - MINIMUM CURRENT GAIN CHARACTERISTICS
100
T,
2N3248
125°C
-~
I
T, = 25°C
50
T,'
V.. = I V
-r-...
....... ~.
-
1'5 0 C
r-..
TJ
= -55°C
r--..
20
....
~
""""" .........
.......
~
\
r-.-~
i'-. ~
,...",
10
0.1
0.2
0.5
1.0
2.0
5.0
Ie, COLLECTOR CURRENT (mA)
10
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-78
20
50
100
2N3249
200
T.I
1"1~
12!.c
rT.I= 251c
100
V.. =IV
~
'" .....
_I"15°C
T.
TJ
20
0.1
0.2
-
=-55°C
2.0
1.0
0.5
I~
r--
r-. t---...
20
10
5.0
f::::
r-..~
~
1\
•
r--f',
50
100
I", COlLECTOR CURRENT (mA)
FIGURE 6 - JUNCTION CAPACITANCE
FIGURE 5 - MAXIMUM CHARGE DATA
5000
20
UNLESS NOTED, Vee
TJ
2000
Q"
1
500
200
100
40
Q"fjF
--
f?s!;1
100°C
IIII
1000
g
--
...... ~ [j1
....
10
fJF
40
....... V
,
t-...
100:»
....
""25 O C
I j
I-
Vee
10V
=
II
---TYP
~ ........
c.. !"-.... 1""0;
....
....
.... , ....
C,.
... 1--
...I-f
Q.
Vee
50
10
20
Ie. COLLECTOR CURRENT (mAl
-
...
3V
4
1
~~J
3V
= 25°C
100
0.1
0.2
1.0
0.5
2.0
5.0
10
REVERSE BIAS (VOLTS)
FIGURE 7 COLLECTOR SATURATION VOLTAGE CHARACTERISTICS
1.0
I
I
~
...g 0.8
II
le= 3 mA
.~
i\
\
II
1.= 10mA
1.=30mA
\
...~
1\
\
E 0.6
!
1.=50mA
2N3248
T. = 25°C
1.= loomA
t\.
1\
\
\
0.4
1\
:E
:>
:! 0.2
i
"
I""- "-
I\..
r--..
'
"-
.....
'"
r--
t--... l -
I)
o
0.02
0.05
0.1
0.2
0.5
1.0
I,. BASE CURRENT (mAl
2.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-79
5.0
10
20
2N3249
1.0
i
.~
E
i!!l
i'
\
1\
0.8
~
le= 10mA
le=3mA
le=30mA
0.4
:Ii
::>
'1-0.
!! 0.2
i
"
"
r-
\
1\
o
0.02
0.05
"'-I' .....
....
0.2
0.1
1.0
I I
f--
~
D••
i
0.6
~
0.4
MAX
V~,,,,,
O.S
..,..
11
-1-1""
ii
I I
j§
MIN
V.,,,,,
1_1.5
2N3248
0.2
0
-0.5
!;!-1.0
::>
ea,,,,, _
I---+-+-+-+-H-H-I+ MAX V.........
~~3249
-2
j"j 'j
-2.5
10
20
Ie. COlLECTOR CURRENT (mAl
I
50
5.0
2.0
1.0
!
100
=-_IMATEIlEY'OT'OIt
FROMffOMlNAL
25°C TO 125G e
55°C TO +25°C
:G.lmY/oC
:t:O.15mv/OC
I...
:t:. fIN/
:!:G.2SM'l'Of.
....
~
o
;....-
ro
-I
20
I
-1-
-t
I
I I
(1 55°C ITO Ht"C)
_L55 0CITO +JSOC)
(2S0YO 12j"Cl -
,"torV.I_ 1
~
~
50
50
ro
FIGURE 11- TURN-OFF WAVE FORM
235
_'lM..--...,
AY
-10.9
20
(25°C TO 12S0C)
Ie COLLECTOR CURRENT (mAl
FIGURE 10 - QT TEST CIRCUIT
°
le= 100 mA
I\.
...
~
T, = 25°C
le=50mA
0.6
C!!
•
2N32~8 -
1\
I- 5 ... =2%
DUTY CYCLE
TlME-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-80
I I
50
50
~
2N3250,A
2N3251,A
MAXIMUM RATINGS
Symbol
Rating
2N3250 2N3250A
2N3251 2N3251A
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
50
Emitter-Base Voltage
VEBO
Unit
60
Vdc
60
Vdc
5.0
Vdc
Collector Current
IC
200
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
0.36
2.06
Watt
mW/'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.2
6.9
Watts
mW/'C
TJ, Tstg
-65 to +200
'c
Operating and Storage Temperature
Temperature Range
2N3250A,2N3251A
JAN, JTX, JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3 Collector
.;--(Q
, EmItter
3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIiJC
0.15
mWf'C
GENERAL PURPOSE
TRANSISTORS
Thermal Resistance, Junction to Ambient
RIiJA
0.49
mW/'C
PNP SILICON
Characteristic
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lc = 10 mAde)
2N3250, 2N3251
2N3250A,2N3251A
V(BR)CEO
40
60
Collector-Base Breakdown Voltage
(lC = 10 !lAde)
2N3250, 2N3251
2N3250A, 2N3251A
V(BR)CBO
50
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 !lAde)
V(BR)EBO
5.0
-
Vde
Collector Cutoff Cu rrent
(VCE = 40 Vde, VBE = 3.0 Vde)
ICEX
-
20
Ade
IBL
-
50
nAde
2N3250, 2N3250A
2N3251,2N3251A
40
80
-
Base Cutoff Cu rrent
(VCE = 40 Vde, VBE
= 3.0 Vde)
ON CHARACTERISTICS
DC Forward Current Transfer Radio (1)
(lc = 0.1 mAde, VCE = 1.0 Vde)
hFE
(IC
=
1.0 mAde, VCE
=
1.0 Vde)
2N3250, 2N3250A
2N3251,2N3251A
45
90
-
(lc
=
10 mAde, VCE
=
1.0 Vde)
2N3250, 2N3250A
2N3251,2N3251A
50
100
150
300
(lc
=
50 mAde, VCE
=
1.0 Vde)
2N3250, 2N3250A
2N3251, 2N3251A
15
30
-
Collector-Emitter Saturation Voltage (1)
(IC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage (1)
(lC = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
-
Vde
0.25
0.5
Vde
0.6
-
0.9
1.2
250
300
-
Cobo
-
6.0
pF
Cibo
-
8.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
Input Capacitance
(VCB = 1.0 Vde, IC
= 0, f =
= 0, f =
2N3250, 2N3250A
2N3251, 2N3251A
fr
MHz
100 kHz)
100 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-81
•
2N3250,A, 2N3251,A
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25'C unless otherwise noted.)
Characteristic
Min
Max
Unit
hie
1.0
2.0
6.0
12
kohms
X 10-4
10 V, f
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mA, VCE = 10 V, f
-
1.0 kHz)
2N3250, 2N3250A
2N3251,2N3251A
h re
=
-
10
20
Small·Signal Current Gain
(lc = 1.0 mA. VCE = 10 V, f = 1.0 kHz)
2N3250, 2N3250A
2N3251,2N3251A
hfe
50
100
200
400
Output Admittance
(lc = 1.0 mA, VCE = 10 V, f = 1.0 kHz)
2N3250, 2N3250A
2N3251,2N3251A
hoe
4.0
10
40
60
/tmhos
rb'Cc
-
250
ps
NF
-
6.0
dB
Symbol
Max
Unit
td
35
ns
tr
35
ns
ts
175
200
ns
tf
50
ns
=
Collector Base Time Constant
(lC = 10 mA. VCE = 20 V, f
•
Symbol
2N3250, 2N3250A
2N3251,2N3251A
Input Impedance
(lC = 1.0 mA. VCE
= 31.8 MHz)
Noise Figure
(lC = 100 ItA, VCE = 5.0 V, RS = 1.0 k fl, f = 100 Hz)
-
SWITCHING CHARACTERISTICS
Characteristic
(VCC = 3.0 Vdc, VBE = 0.5 Vdc
IC = 10 mAdc, IB1 = 1.0 mAl
Delay Time
Rise Time
Storage Time
(lC = 10 mAdc, IB1 = IB2
VCC = 3.0 V)
=
2N3250, 2N3250A
2N3251,2N3251A
1.0 mAdc
Fall Time
(1) Pulse Test: PW = 300 ItS, Duty Cycle = 2.0%.
SWITCHING TIME CHARACTERISTICS
FIGURE 1 -
DELAY AND RISE TIME
500
200
100
u
,~
1
\..
'r\.
50
>=
500
J
TJ = 25°C
le= 101"
Vo, = 0.5 V
TJ = 25'C
Ie = 10 I" = 10 I"
Vee = 3 V
200
"\
,'\r\ "-'I\.
100
,
~
FIGURE 2 - STORAGE AND FAll TIME
"' "\' '
1\
t,@Vee =3V
- t-
'\
"
'~
:
10
g
">=
50
~
'\.. t, @Vee=IOV
20
u
"- ~
~
~ I\..
'\
-
t.
".
,
......
"-
"
I'-..
.......
t,
.......
..........
20
~
f"oo
......I-
10
'" ...... .....
10
Ie. COLLECTOR CURRENT {mAl
20
10
Ie. COLLECTOR CURRENT (mAl
50
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-82
20
50
2N3250,A, 2N3251,A
AUDIO SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VeE c. 6V. TA = 25°C)
FREQUENCY
FIGURE 3 -
SOURCE RESISTANCE
FIGURE 4 10
II
f= lKC
\.
1\
'\
SOURCE RESISTANCE = 43 K
Ic= IOIlA
.........
.......
"
100
V
200
400
~
\
lKC
2KC
4KC
10KC
.......... ~
-
SOU,CE RESISTANCE = {6 K
Ie = 100pA
20KC 40KC
100
100KC
200
400
f. FREQUENCY ICYCLES)
/f
IJ
I
i\.
..........
j,
Ic=lomA/
le=10pA \
i'..
~
f
'I
II
-
/J
•
'/'e=lOOpA
i-"
V
'/
~
lK
2K
4K
10K
R,. SOURCE RESISTANCE IOHMS)
20K
40K
lOOK
h PARAMETERS
VeE
FIGURE 5 -
= 10V. f = 1 kc. TA = 25°C
CURRENT GAIN
FIGURE 6 -
200
100
V
50
,JAN 2N3251A -'-
== =
-
2N3251, 2N3251 A / '
1j
~
~
~250, 2N3250~
..... .....
"'"
100
~
..,. V~
80
=
JAN 2N3250A
./
"'"
10
./
50
10
40
10
20
05
Ie. COLLECTOR CURRENT (mA)
02
50
50
10
20
"-
10
=
"-
10
r-.
2N3251,2N3251A
JAN 2N3251 A
02
in
i'.
50
2N3250, 2N3250A
I JfNI2~3m~
20
01
02
.......
--
05
10
2.0
Ie. COLLECTOR CURRENT (mA)
20
10
05
Ie. COLLECTOR CURRENT (mA)
~;
....
50
10
INPUT IMPEDANCE
"-
"'
50
1.0
2N3251,2N3251A
JAN 2N3251A
"' ........
2N3250, 2N32 50A~
JAN 2N3250 A
20
........
2N3250, 2N3250A
JAN 2N3250A
""
FIGURE 8 -
I'
i
V'
01
.......
"- i'.. "- r--
V
./
VOLTAGE FEEDBACK RATIO
FIGURE 7 -
V
50
20
0.1
JAN 2N3251A
20
60
20
OUTPUT ADMITTANCE
200
400
'"
!.............
"1"-
05
50
01
10
02
10
20
05
Ie. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-83
50
:10
2N3250,A, 2N3251,A
FIGURE 9 -
NORMALIZED CURRENT GAIN CHARACTERISTICS
20
TJ -12S'C
.......
10
I
........"~
TJ=~SS'C
~
a
""r-...
TJJS"C
~
;jl
'"
~
--.. "-'\
OS
lE
"
'~
1
NORMALIZED AT Ie
\
= 10 mAo VeE = 1V
74 - 2N32S0. 2N32S0A. JAN 2N32S0A
TYPICAL hFE = 167 _ 2N32S1. 2N3251A. JAN 2N32S1A
I I I II II
02
01
10
05
02
FIGURE 10 -
2.0
Ie. COLLECTOR CURRENT (mAl
50
20
10
50
COLLECTOR SATURATION REGION
1.0
~
0
Co
0.8
~
~
as
~
15
§.'!
~
~
TJ = 25'C
This graph shows the effect of base current on collector current
~
0.6
~\
0.4
\
8
w
,i2 0.2
Observe that at Ie 10 rnA an overdrIVe factor of at least 2.5 IS reqUired to
drive the transistor well mto the saturation region. From Figure 1. it IS seen that
h" @ I volt is tYPically 167 (guaranteed limits from the Table of Characteristics
can be used for "worst-case" deSign) ...
0
~50mA
~-.
/30mA
~
Ir
o
2.5
3t/
A1
FIGURE 11 -SATURATION VOLTAGES
I
0.8
~
0.6
-
FIGURE 12 10
!
#,=10
-TJ =25'C
~
~
V"I:;:.l.-
r-
V
0.5
>--
~
i5;
-
I I
25'C
u -1.0
f-- 25°C to 125°%
~
0
~/
u
VCE(satj
0.2
-1.5
-I--'
-20
~
-2.5
10
Ie, COLLECTOR CURRENT (mAl
20
50
D
125,l
"../
yV
"
'"
fly, for V"
_~_r--
;"-fo"'"
?
c- -55°C to 25'C
I I
10
30
20
Ie, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-84
t
-55°C to 25'C
15
0.4
TEMPERATURE COEFFICIENTS
(JvCforVCE(§at)
;; -0.5
§
§.'!
15
I" ;::; 6.68 mA typ
91;, OVERDRIVE FACTOR
1.0
~
167
= 10 mAli"
3
I
~
the
/30 IS
current gain of the tranSistor at I volt, and (3, (forced galnl IS the ratio of lell"
In a CIICUIt EXAMPLE For type 2N3251, esllmate a base current 11,,1 to Insure
saturation at a temperature of 25°C and a collector current of lOrnA.
40
50
2N3250,A, 2N3251,A
IT AND rb'C e versus Ie
FIGURE 13 -
\
,/'
\V
/ '\
.r
"- I"""-
30 MC EQUIVALENT CIRCUn
FIGURE 14 -
400
Ve, = 10V,
1,=5mA,
M.A. G. = 29 db (TYPICALLVI
-
1";-r-- .........
2.1 pI
_\1
II
i-- r-
rb'C C
35 pI
17Oil
;::1' VBmmhos
x 100
3 pI ;::,
2.2KIl
II
Ve, = 20V
TA =25·C
25
20
10
15
Ie, COLLECTOR CURRENT (mAdel
FIGURE 15 -
30'
JUNCTION CAPACITANCE
FIGURE 16 -
20
TJ 1=
CHARGE DATA
1000
2J.c
- - Vee=IOV
500
IL
I
- - - Vee=3V
flF= 10
t--r-t-- r--
1/
TJ = 25'C
L
10
......
"" "'" r-...
-w
I'
~
1",...
1"1"-
......
........
50
r-....
20
0.2
05
1.0
2.0
REVERSE BIAS (VOL T~I
~
.... r~~
QA
0.1
I-!"'"
~
100
!'.
t-...
C,b. ......
aT
1""-
'"
C.b.
I"--- I"--t-...
~
200
1-'
5.0
10
~-lI
- r--
5
10
20
Ie, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-85
,'" '"
"'L'
"
'"
50
2N3252
2N3253
2N3444
MAXIMUM RATINGS
Rating
•
2N3253
2N3444
Unit
Collector-Emitter Voltage
VCEO
30
40
50
Vde
Collector-Base Voltage
VCBO
60
75
80
Vde
Emitter-Base Voltage
VEBO
Symbol 2N3252
Total Device Dissipation
@TA= 25°C
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
5.0
JAN, JTX AVAILABLE
2N3253, 2N3444
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Vde
Watts
mWfC
1.0
5.71
Watts
mWfC
5.0
28.6
-65 to +200
~~'~o,
"
'c
2 1
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
SWITCHING TRANSISTORS
Thermal Resistance, Junction to Case
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, pulsed, la = 0)
Collector-Base Breakdown Voltage
(lC = 10 MAde, IE = 0)
30
40
50
60
75
80
V(BR)EBO
Collector Cutoff Current
(VCE = 40 Vde, VEB(off) = 4.0 Vde)
(VCE = 60 Vde, VEB(off) = 4.0 Vde)
2N3252
2N3253, 2N3444
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 40 Vde, IE = 0, TA = 100'C)
(Vca = 60 Vde, IE = 0)
(VCB = 60 Vde, IE = 0, TA = 100°C)
2N3252
2N3252
2N3253, 2N3444
2N3253, 2N3444
ICEX
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
5.0
IEaO
IBL
2N3252
2N3253, 2N3444
-
-
-
Vde
pAde
-
-
Icao
-
Vde
V(BR)CBO
2N3252
2N3253
2N3444
Emitter-Base Breakdown Voltage
(IE = 10 MAde, IC = 0)
Base Cutoff Cu rrent
(VCE = 40 Vde, VEB(off) = 4.0 Vde)
(VCE = 60 Vde, VEB(off) = 4.0 Vde)
Vde
V(BR)CEO
2N3252
2N3253
2N3444
-
0.5
0.5
pAde
0.50
75.0
0.50
75.0
-
0.05
-
0.50
0.50
pAde
MAde
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 150 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC
=
1.0 Ade, VCE = 5.0 Vde)
hFE
-
2N3252
2N3253
2N3444
30
25
20
2N3252
2N3253
2N3444
30
25
20
90
75
60
2N3252
2N3253
2N3444
25
20
15
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-86
-
-
-
-
2N3252,2N3253,2N3444
ELECTRICAL CHARACTERISTICS leontinued) ITA
~ 25°C unless otherwise noted)
Svmbol
Characteristic
Collector-Emitter Saturation Vollagell)
IIc ~ 150 mAde, IB ~ 15 mAde)
(lc
(lc
~
~
500 mAde, IB
=
1.0 Ade, IB
~
VCElsat)
2N3252
2N3253, 2N3444
500 mAde)
100 mAde)
Min
Max
-
0.3
0.35
Vde
2N3252
2N3253, 2N3444
-
0.5
0.60
2N3252
2N3253, 2N3444
-
1.0
1.2
-
1.0
1.3
1.8
Base-Emitter Saturation Voltagell)
(lc = 150 mAde, IB ~ 15 mAde)
(lc = 500 mAde, IB ~ 50 mAde)
(lc ~ 1.0 Ade, IB = 100 mAde)
VBElsat)
Unit
Vde
0.7
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE ~ 10 Vde,'f = 100 MHz)
Output Capacitance
IVCB = 10 Vde, IE
Input Capacitance
IVEB ~ 0.5 Vde, IC
~
~
0, f
=
100 kHz)
0, f
=
100 kHz)
tr
MHz
200
175
-
Cabo
-
12
pF
Cibo
-
80
pF
td
-
tr
-
2N3252
2N3253, 2N3444
-
SWITCHING CHARACTERISTICS
IC ~ 500 mAde, IBI ~ 50 mAde
VCC = 30 V, VBE ~ 2.0 V
Delay Time
Rise Time
=
IC ~ 500 mAde, IBI
VCC ~ 30 V
Storage Time
Fall Time
Total Control Charge
IIc ~ 500 mAde, IBI
IB2
~
2N3252
2N3253, 2N3444
50 mAde
-
ts
tf
QT
=
11) Pulse Test: Pulse WIdth
50 mAde, VCC
~
~
15
ns
30
35
ns
40
ns
30
ns
5.0
nC
30 V)
300 p,s, Duty Cycle
~
2.0%.
COLLECTOR SATURATION VOLTAGE CHARACTERISTICS
_
1.4
~
g
2N3252
III 1.2
~
~
~
i
\
\
1.0
le= 250 mA
le= 100mA
•• 0.8
fil
~ 0.6
:,
~
::::liE
0.4
IJ
0.2
2
\
---
4
TJ = 25°C
i'..
"
.... r.- io-..
7
8 9 10
-
\
le= 750mA
\ le =500mA
"-
\
\
~
i
\
\
\
r- r--
20
15
I" BASE CURRENT (mAl
30
40
50
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-87
60
r- "-
70 80 90 100
150
200
•
2N3252,2N3253,2N3444
in 1.4
iIII
ii!5
_
le= 250 mA
\
,.
~
0.4
IJ
0.2
"
--
........
2
6
8 9 10
7
---
20
IS
I,. BASE CURRENT (mAl
30
,
!,
40
50
60
,
in 1.4
!:;
~
-
T, = 250C
Ie = 750mA
Ie = 500mA
1\
'\.
0.6
i
2N3253
,\
\
Ie = lOa mA
0.8
O~
\
\
1.0
i~
•
\
\
1.2
70 80 90 100
I
2N3444
11.2
I
T, = 25°C
Ie = 100mA
le= 250 mA
o
0.8
!i
0.4
J
0.2
le= 500 mA
\le =750mA
\
... 0.8
-~...
-
1\
1.0
~
200
ISO
\
2
,
"-
"- ..............
\
"1'-0
"-
4
8
7
a
9 10
20
IS
I,. BASE CURRENT (mAl
30
40
50
80
150
70 80 90 100
200
MINIMUM CURRENT GAIN CHARACTERISTICS
70
T,
50
T,
-
125'C
- --:.....,-
z
T,
15°C
T,
55°C
_
--
~ ~,
-VeE
2V
i'- "-
---..r-.."" ," ~ r...'
'",8 ~ t--...
~
~
~
~ 20
-
-...;:
25'C
z
C 30
.......
2N3252
_ _ VeE_lV
1"'- ....
,.!!i
z
;;;
" 10
~,
~;:~
1--...'
.:......
."'"
5
50
60
70
80
90
100
200
300
Ie. COLLECTOR CURRENT (mAl
400
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-88
500
600
700
800 900 1000
2N3252,2N3253,2N3444
70 r 50
TJ
==
125°C
_
30
z
~
T,
-
25°C
~
i,.
20
~
,.z
T,_
15°C
T,
55°C
I 2N3253
--:::-.::"-.....
~-
-
~
: .......
..... ~
2V
- - VeE
,
r-.... ~ ~
"~~~~
"-.
10
£
=1 V -
VCE
..... """"
""'" i"':
5
50
60
70
80
90 100
200
300
Ie. COLLECTOR CURRENT (mAl
500
400
600
700
800 900 1000
70
T 'N3444
50
T,
-
125°C
T,
VCE
.:::.:::::r:::::.-- ......
-
25°C
T,_
-
15°C
TJ _ -55°C
5
50
60
70
80
90
100
~
.s
t-II.=2~,
50
,..-1"-
'"
::E
.
:
._,-
- -1\-- ....1--
....
1-0-
~
J;~
V
~
II
~I-"
II. = 10 J.o"
I
11 ,= In
70
100
r-~
50
r--i'
'"
;:::
-'
-'
~
600
700
~
""IIi
800 900 1000
~
~
p.-l0
~ .. ~ t..........
30
_125 D C T,
~
~.. t-......
"" ~ t--,
~
~
I:,
=',,,'tt
Vee = 30 V
_ _ 25D C TJ
11.= 20
I""
::E
I
200
300
'c. COLLECTOR CURRENT (mA)
~
"'" """"
500
20
!"o- f-. ~-
" t--.....
- ' - 25°C
--125 D C
I
50
~
I"i<'
S.
t, - 1/8 t '.1
f "
10
f-
70
'-111"
~
30
20
....'..;:
~~~
100
;:::
'"
~
0
'"
~
----
~ '..,......
TYPICAL FALL TIME VARIATIONS
TYPICAL STORAGE TIME VARIATIONS
lob
70
-"
~ ~...........
400
200
300
Ie. COLLECTOR CURRENT (mAl
iv
--VeE
"":::::
_
1V
-
J,..10-
~
10
500
700
50
1000
70
100
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-89
200
300
'c. COLLECTOR CURRENT (rnA)
500
700
1000
•
2N3252,2N3253,2N3444
TYPICAL RISE TIME VARIATIONS WITH TEMPERATURE
TYPICAL TURN·ON TIME VARIATIONS WITH VOLTAGE
100
100
(1,=IO
T, = 25°C
70
~
50 ~f\.
70
I
w
30
:IE
;:::
S
w
1\ I\..
i~
20
;:::
--- "
1\
'-
td@V"'=O~
•
~
t,
~
:IE
l'::
~r-. r--
f\.
50
j
1'1"
VCC=30Yf
(1,=IO
- - - ' 25 0 (:__ 125°C
K
-
w
U)
-
Vee = 30 V
r--.
'~
a:
~ee~l---~
........ t,
30
20
70
100
200
300
700
500
50
1000
70
100
200
JUNCTION CAPACITANCE VARIATIONS
200
T,'=
I'..
w
u
150~
I7000 f -
l-
-
....
/
/
/
<> 2000
-5
....
~
""
/
!
1000
500
r---.... .....
....Cob....
..........
....
8
0.2
0.5
a.
..........
10
0.1
5.0
1.0
2.0
REVERSE BIAS (VOLTS)
10
300
200
50
50
20
I
1.4
~ 1.2
MA~ V"I"l!--
1.0
gl
0.8
MINVU1$.It)
;:::
U)
0.4
T( )2rC
/
2N3253:2rJJ4
V
.~
/~
2N3252
Ih V
MAX VaIN.(
-
2N3~53'2N3444
,
/'
.,-
1
t1
1.11-1
iF
,
g
- -
9ve for Vell.lIIl,
~
0.5
&1
u
-1.0
~.. forlv~
MAX VCOIN.( 2N3252
-1.5
-2.0
70
100
200
300
500
Ie. COLLECTOR CURRENT (mA)
700
1000
700
'y
1000
y
V
-
~ ~55°C TO 25°C
F"""""
J-'1
o
200
400
600
Ie. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-90
.:::f7't---~
l--1'5°c TO 25°C
PI
8
a
".
125 0 C
$ -0.5
k c:::: ~
0.2
50
500
200
300
Ie. COLLECTOR CURRENT (mA)
2JOC TO J250c
1.0
II
1/
100
-'
1.5
,I
k
1--"'"
70
77
IV
2.0
I
(1,= 10
T, = j5 0 C
1.6
0.6
1/
TYPICAL TEMPERATURE COEFFICIENTS
LIMITS OF SATURATION VOLTAGES
1.8
~
--
..... p'
-
~
Z /
"7
700 /
i'-...
1' ......
t!l
;!
V
/
v/ /
u
30
20
g
)
T, = 125°
3000
Cib
z
...""uu
Vee 30V
le= 10 I"
T, = 25°C
Q,
'"
50
1000
MAXIMUM CHARGE DATA
5000
-,
700
500
10.000
-MAX
- - - TYP
~
300
Ie. COLLECTOR CURRENT (mA)
Ie. COLLECTOR CURRENT (mA)
~
.~~~k
10
50
70
-
~~
~d@t.. ~2~
10
100
~
800
1000
2N3300
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
(Applicable 0 to 10 mAde)
VCEO
30
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
500
mAde
Collector Current -
Continuous
IC
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
2N3300
2N3302
0.8
4.56
0.36
2.06
mWf'C
3.0
17.2
1.8
10.3
Watts
mWf'C
Watt
~~
1 Emitter
•
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
°c
-65 to +200
TJ, Tstg
2N3302
3 Collector
NPN SILICON
Refer to 2N2218 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
30
-
Vde
V(BR)CBO
60
-
Vde
V(BR)EBO
5.0
-
Vde
ICES
-
pAde
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lC
=
(lC
(IE
=
=
10 mAde, IB
10 I'Ade, IC
= 50 Vde, VBE = 0)
= 50 Vde, VBE = 0, TA =
Emitter Cutoff Current (VBE = 3.0 Vde, IC = 0)
Base Current (VCE = 50 Vde, VBE = 0)
Collector Cutoff Current
= 0)
= 0)
= 0)
10 pAde, IE
(VCE
(VCE
-
0.Q1
10
IE80
-
10
nAde
18
-
10
nAde
150°C)
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)(l)
(lC = 150 mAde, VCE = 1.0 Vde)(l)
(lC = 150 mAde, VCE = 10 Vde)(l)
(lC = 500 mAde, VCE = 10 Vde)(l)
hFE
2N3300,
2N3300,
2N3300,
2N3300,
2N3300,
2N3300,
2N3302
2N3302
2N3302
2N3302
2N3302
2N3302
= 150 mAde, IB
= 300 mAde, IB
= 500 mAde, IB
Base-Emitter Saturation Voltage
(lc = 150 mAde, IB
(lc = 300 mAde, 18
(lc = 500 mAde, 18
Base Emitter Voltage (lC = 150 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage
(lC
(lc
(lC
35
50
75
= 15 mAde)
= 30 mAde)
= 50 mAde)
= 15 mAde)
= 30 mAde)
= 50 mAde)
VCE(sat)
VBE(sat)
VBE(on)
-
-
-
50
-
100
50
300
-
0.22
0.45
0.6
Vde
-
1.1
1.3
1.5
Vde
-
1.1 V
Max
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
=
= 50 mAde, VCE =
= 0, f = 140 kHz)
= 0, f = 140 kHz)
(lC
10 Vde, f
=
10 Vde, IE
= 2.0 Vde,
IC
100 MHz)
250
-
Cobo
-
8.0
pF
Cibo
-
20
pF
t,.
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC
Turn-Off Time
(VCC
= 25 Vde, IC = 300 mAde, IBl = 30 mAde)
= 25 Vde, IC = 300 mAde, IBl = IB2 = 30 mAde)
(1) Pulse Test: Pulse Width .. 300 I's, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-91
MHz
2N3307
2N3308
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
I
MAXIMUM RATINGS
Symbol
2N3307
2N3308
Unit
VCEO
35
25
Vdc
Collector-Emitter Voltage
VCES
40
30
Vdc
Collector-Base Voltage
VCBO
40
30
Rating
Collector-Emitter Voltage
•
Emitter-Base Voltage
Vdc
VEBO
3.0
Vdc
IC
50
mAde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
200
1.14
mW
mWrC
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
300
1.71
mW
mWrC
TJ, Tstg
-65 to +200
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
3 Collector
"~~~,
'"
4
GENERAL PURPOSE
TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, IB = 0)
V(BR)CEO
2N3307
2N330S
Collector-Emitter Breakdown Voltage
(lC = 10 pAdc, VBE = 0)
-
35
25
V(BR)CES
2N3307
2N330S
Collector-Base Breakdown Voltage(l)
(lC = 10 pAdc, IE = 0)
40
30
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc)
(VCB = 15 Vdc, T = 150·C)
30
-
3.0
-
40
V(BR)EBO
ICBO
2N3307
Vdc
Vdc
V(BR)CBO
2N3307
2N330S
Vdc
Vdc
pAdc
-
0.010
3.0
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vdc, IC
=
hFE
2N3307
2N330B
2.0 mAde)
40
25
250
250
-
Collector-Emitter Saturation Voltage
(lC = 3.0 mAde, IB = 0.6 mAde)
VCE(s.t)
-
0.4
Vdc
Base-Emitter Saturation Voltage
(lC = 3.0 mAde, IB = 0.6 mAde
VBE(sat)
-
1.0
Vdc
1200
MHz
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 10 Vdc, IC = 2.0 mAde, f
=
tr
100 MHz
f max
Maximum Frequency of Operation
(VCE = 10 Vdc, IC = 2.0 mAde)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f = 0.1
300
Cobo
2N3307
2N330B
MHz
Small-Signal Current Gain
(VCE = 10 Vdc, IC = 2.0 mAde, f
=
Collector Base Time Constant
(VCB = 10 Vdc, IC = 2.0 mAde, f
= 31.S MHz)
Typical
2000
-
MHz
pF
-
1.3
1.6
40
25
250
250
2.0
2.0
15
20
-
hfe
1 kHz)
2N3307
2N330B
rb'C c
2N3307
2N330S
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-92
ps
2N3307,2N3308
ELECTRICAL CHARACTERISTICS (continued) ITA
= 25°C unless otherwise noted)
Symbol
Characteristic
NF
Noise Figure
IVCE = 10 Vdc, IC
=
=
2.0 mAde, f
2N3307
2N3308
200 MHz)
Min
Max
-
4.5
6.0
17
-
Unit
dB
SWITCHING CHARACTERISTICS
Ge
Power Gain(2)
(VCE = 10 Vdc, IC
= 2.0 mAde, f = 200 MHz)
Power Gain (AGC)(2)
(VCE = 5.0 Vdc, IC
=
Ge
=
20 mAde, f
(1) Cabo is measured in guarded circuit such that the can capacitance is not included.
(2) AGC is obtained by increasing IC. The circuit remains adjusted for VCE = -10 Vde, IC
COMMON EMITTER AVERAGE SMALL POWER GAIN
& NOISE FIGURE versus COLLECTOR CURRENT
0
-
•
= - 2 mAde operation.
NOISE FIGURE versus FREQUENCY
5
0
- - TUNED AT Ie; -2 mAde ONLY.
- TUNEO AT EACH TEST CURRENT
Ve.=-IO Vde
f=200 MHz
I
~
'"-
""
0"
I
0
,,,
... ~
I
4
' ...
~
~
Nf
,,""
:>
~
.......
~
I'...
0
I
dB
-
2N3307
2N3308
200 MHz)
dB
-
-4
-
-8
w -u
-~
Ie. COLLECTOR CURRENT (mAde)
r--
--
r-
VC~=-
VCE=-5Vdc
3
~
2
~~
Ie .=r-2mAdc
RG =50 ohms
"r':' 1',
-ffi
II
-15Vdc-
I
'"
-~
0
ro
-ro
30
50
70
100
200
300
100
f. fREQUENCY (MHz I
MOTOROLA SEMICONDUCTORS
SMALL-SIGNAL DEVICES
4-93
MAXIMUM RATINGS
PNP
Rating
•
Symbol
NPN
2N5415 2N5416
2N3439
2N3440
Unit
Vde
Collector-Emitter Voltage
VCEO
200
300
350
250
Collector-Base Voltage
VCBO
200
350
450
300
Vde
Emitter-Base Voltage
VEBO
4.0
6.0
7.0
7.0
Vde
Base Current
IB
0.5
Ade
Collector Current Continuous
IC
1.0
Ade
Total Device Dissipation
@TA=25°C
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Total Device Dissipation
@TA=50°C
Derate above 50°C
Po
Operating and Storage
Junction Temperature
Range
TJ, Tstg
-
1.0
5.7
Watts
mWf'C
10
57
5.0
28.6
Watts
mWf'C
-
1.0
6.7
NPN
2N3439
2N3440
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
,f!!
Watts
mWf'C
-65 to +200
PNP
2N5415
2N5416
°c
HIGH VOLTAGE AMPLIFIER
THERMAL CHARACTERISTICS
Symbol
2N5415
2N5416
2N3439
2N3440
Unit
Thermal Resistance, Junction to Case
R8JC
17.5
35
°CIW
Thermal Resistance, Junction to Ambient
R8JA
150
175
°CIW
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
(lc = 50 mAde, IB = 0)
"Collector Cutoff Current
(VCE = 300 Vde, IB = 0)
(VCE = 200 Vde, IB = 0)
VCEO(sus)
200
300
350
250
2N5415
2N5416
2N3439
2N3440
ICEO
2N3439
2N3440
"Collector Cutoff Current
(VCE = 450 Vde, VBE = 1.5 Vde)
(VCE = 300 Vde, VBE = 1.5 Vde)
2N3439
2N3440
Collector Cutoff Current
(VCB = 175 Vde, IE =
(VCB = 280 Vde, IE =
(VCB = 360 Vde, IE =
(VCB = 250 Vde, IE =
2N5415
2N5416
2N3439
2N3440
ICEX
ICBO
0)
0)
0)
0)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
(VEB = 6.0 Vde, IC = 0)
lEBO
2N5415
2N5416, 2N3439, 2N3440
-
-
-
Vde
-
pAde
20
50
pAde
500
500
pAde
-
50
50
20
20
-
20
20
pAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 2.0 mAde, VCE
"(lC = 20 mAde, VCE
hFE
= 10 Vde)
= 10 Vde)
"(lC = 50 mAde, VCE = 10 Vde)
-
-
2N3439
2N3439, 2N3440
40
160
2N5415
2N5416
30
30
150
120
VCE(sat)
-
0.5
Vde
VBE(sat)
-
1.3
Vde
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 4.0 mAde)
2N3439, 2N3440
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 4.0 mAde)
2N3439, 2N3440
30
..
"Indicates Data on Addition to JEDEC Requirements .
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-94
2N3439, 2N3440 NPN (2N5415, 2N5416 PNP
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Characteristic
SMALL-SIGNAL CHARACTERISTICS
1
Current-Gain - Bandwidth Product
(lc = 10 mAdc, VCF = 10 Vdc, I = 5.0 MHz)
Min
Max
IT
15
-
-
15
10
-
75
pF
25
-
-
-
300
Ohms
2N3439, 2N3440
Output Capacitance
(VCB = 10 Vdc, IE = 0, I = 1.0 MHz)
Input Capacitance
(VEB = 5.0 Vdc, IC = 0, I = 1.0 MHz)
Unit
MHz
pF
Cabo
2N5415,2N5416,
2N3439, 2N3440
Cibo
Small-Signal Current Gain
(lC = 5.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
(lC = 10.0 mAdc, VCE = 10 Vdc, 1= 5.0 MHz)
I'
Symbol
hIe
2N5415,2N5416
Real Part 01 Input Impedance
(VCE = 10 Vdc, IC = 5.0 mAdc, 1= 1.0 MHz)
Re(hie)
•
(I) Pulse Test: Pulse W,dth '" 300 I's, Duty Cycle'" 2.0%.
CAUTION: The sustaining voltage must not be measured on a curve tracer. (See Fig. 15.)
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
:Ftt
'"P'''
o
V,
PIN.:=: JOI1S
Duty Cycles'" 1 0'1
t r =10lls
--
(et__
NOTE: Vee and RC adjusted for VCE(off) = 150 V and Ie
as desired,RB chosen for desired IS1' V1 :::::::::10 V, V2 ::::::8.0 V
RS
For td and tt. D1 is disconnected
and V2 = 2.0 V
--'W~-+--l
V2
51
For PNP tast circuit,
reverse all polarities.
I
PNP
2N5415,2N5416
FIGURE 2 - TURN·ON TIME
1000
1000
le/'a-5.0
700
500
300
200
t,@VCE(off)
................
...........
~ 100
;:: 70
/
.::::- "'-.......
150V
.....
t--
~
I'"
20
30
50
70
IC, COLLECTOR CURRENT (rnA)
;::
_- 200
t--
..................
of: ---O~
30
10
............
...............
30 I---- Id@VBE(off)'2.0V
-1-
I:@
I~II~ "5.J to 10- -
]: 500
~
j ......
---
~
i'
......
--
k:-- tf@VCE(off)
.....
.....
I'-.......
50
30
10
200
150 V
-~
I"""-....
---1
~
-
'CIIB - 5.0
'CIIB - 10
IBI IB2
TJ' 25 0C
20
30
50
70
Ie. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-95
200
100
1,@lcllB 5.01010
100
70
Iclia' 5.0
Ic/la'10
'Bl' IB2
TJ' 25 0C
--
~
300
S200
..........
100
.......
1 I I ! _I I.
2000
1000
700
20
30
50
70
Ie, COLLECTOR CURRENT (rnA)
......
1
1
20
30
50
70
IC. COLLECTOR CURRENT (rnA)
10
//
r-......
.....
10
200
100
1
20
I~
100
7
--- --
==
.....
-....r....~
50
r-..
tf@VCE~0ff)-150V
......
10
25 0C- -
.......
...... /
FIGURE 3 - TURN-OFF TIME
3000
21100
3110 I"""-....
...... ~
~ 100
........
i'
31100
1000
700
]" 500
~
5.0
TJ
""' z
~f.-::::;:::::
- - - -~
0.05
~
11
0.01
II
r---
12--1
SINGLE
PULSE
0 CURVES APPLY FOR POWER
PULSE
OJC!t) TRAIN
r(tlOJCSHOWN
'REAO TIME AT 11
TJ(pk)- TC = P(pk) OJc!t)
8~!1!~ 0.05t::::;:4
....
~~
.......
~;.;~~:t==~=t=tttt:ttt:==I=ttttt~i=~OU~T~Y~C~Y~CL¥E:::.0~'¥1~/12~~==t=:j=~ttt~
0.031-\:--=....1"
....
-0 °lS7 Wil
~
1
1
0.02
I III
0.01 ':,----:-'::::--::-I::-..J...,+-Jl...l..ll,I.,---::l:,--:l::--.L-:L,.L..L.J...u,--..l.,---.,l..,-Ll,-L.L.LLL--.L...--.,L~__.,L..L..JL.LJ.l.,_--l_,__1_.,-L..l.__L.Llll
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300
500
1000
I. TIME (m,)
FIGURE 7 - ACTIVE-REGION SAFE OPERATING AREA
1.
ii:
:&
::>
PNP -
0
O. 7
O. 5
"
O. 3
a:
a:
:,
B
a:
-
O. 11~ 0.07
'-'
j 0.05
S 0.03
.;
- 0.02
" "~'"
"\.
-
f--
::>
I'\." .Om~
I\'
B
~
TJ = 2000 C
de
~.~s" "\.Ir..
BONOING WIRE L1MITEO
\
THERMALLY L1MITEO
@TC = 25 0 C (SINGLE PULSE)
SECOND BREAKOOWN L1MITEO
CURVES APPLY BELOW
RAi
I
EO CEO
I I II
o. 3
o.2
df~
5.0m~ 1.Oms
""t-
~ 0.1
~ 0.01
I-
l-
10
20
30
50 10 100
200
VCE. COLLECTOR-EMITTER VOLTAGE (V(LTS)
"
300
r-
,,
500", ~ 50",
100jlS-' ...
,
,
,
0.05
-
.... ,
I ...
..-,
",
TJ-2000C
_._.- BONDING WIRE L1MITEO
---THERMALLY
L1MITEO
~O,O3
@TC=25'C(SINGLEPULSE)
"
0.02
CURVES APPLY BELOW
2N3440 1-+1
RATEO VCEO
2N3439
0.0 1
5.0 1.0 10
20
30
50 70 100
200 300
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
...J
S
."\.
2N5416 -
10
O. 1
~ o.5
~
2N5416
0.0 1
5.0 7.0
1.0
10",
OO"'~ 50", """
.
I-
~ O. 2
NPN - 2N3439, 2N3440
2N5415. 2N5416
.
R=j.
500
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-96
500
2N3439, 2N3440 NPN / 2N5415, 2N5416 PNP
FIGURE 8 - POWER OERATING
10
;;;
....
....
~
B.O
«
~
z
0
;:: 6.0
~
........
iii
i5 4.0
'" "'" ""
/
~ 2.0
_
...............
/
K..
"- .......
........
I
........
...............
2N3439,2N3440
I
...... ~
I
40
There are two limitations on the power handling ability of a
transistor, average junction temperature and second breakdown.
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pkl ~ 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided T J(pkl .; 200°C. T J(pkl may be
calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values Jess than the limitations imposed by second breakdown.
(See AN-4151.
V
...........
'"~
1C
MJ54115,MJ51416
80
"""......... ~
200
160
120
TC, CASE TEMPERATURE (OCI
I
PNP
2N5415.2N5416
NPN
2N3439 2N3440
FIGURE 9 - OC CURRENT GAIN
200
300
TJ = 150°C
z
;;:
'"....
~
30
...c...
20
a:
a:
::>
~
~
I
"
-55°C
~
7.0
5.0
~
VCE = 2.0 Volts
-lii--~CE ~ 1~ ~olltsl
3.0
2.0
0.5
III
1.0
'"
'"
G
20
;;:
~
10
'"....
100
70
50
z
25°C
50
::5
~.
~ ~~
5.0
10
20
50
100
..--:
-55°C ~
~
I
~
I
c
.~
10
~
\'
~ ~\
f'-' i="f-=
VCE 2.0 VOLTS
VCE 10 VOLTS
3.0 '11111
0.5
1.0
500
"
25°C
7.0
5.0
200
-I-
f-
30
'-'
I IIIII
2.0
tl ~ ~~OOC
200
100
70
-I
I I II
2.0
5.0
10
20
50
100
200
500
Ie, COLLECTOR CURRENT (mAl
IC, COLLECTOR CURRENT (mAl
,
FIGURE 10 - COLLECTOR SATURATION REGION
2.0
~
~ 0.8
2.w
'"«
w
'"~
~
~ 0.6r---+-1-~~+H~~r-~~~~-+~~-+~1+H
a:
~~
\
g
.,.
....'"o
~ 0.2r---+~\~~d+H-1-~'.~,"~~~~-+-+"~~~4tH
r-.
~
1.0
2.0
f--
r--
20mA
20
50
>
100
IS, SASE CURRENT (rnA)
0.1
0.2
~
~
...
10
0.5
--
1.0
........
r--
I-
2.0
5.0
IS, BASE CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-97
\
\
......
200 rnA
100mA
1\ 50mA
IC =
w
5.0
\
lOrnA
8
~
0.5
O.B
~ 0.4
i-r--
0.2
\
'"
::i'
:\
\
\
1.2
w
8
0.1
\
1.6
>
0.4r---ir1-~~+H-1~\~-r~~H+t-+-J-1-~4H+H
ul
\ t ~i5Jcl
\
10
20
50
100
II
2N3439, 2N3440 NPN / 2N5415, 2N5416 PNP
FIGURE 11 - "ON" VOLTAGES
1.0
1.0
TJ = 25°C
~
~~EI(
)@IIC/ll
Inllt I
O.S
I
~
-I---::::
10
0.8
~
w
0.6
I
II
VSE@VCP10V
Q
> 0.4
•
"~
I
I
5.0
7.0
10
20
30
50
70
100
300
/
-t--r-
VeE(sa!)
o
Iclis
I
3.0
2.0
500
V
.....
Iclis = 10
0.2
~ "Ielis = 5.0
o
0.4
Q
>
V
200
/
w
.- V
Iclis = 10
VCE(III)
V
i-"""
VSE @VCE = 10 V
~
'"
>'
0.2
&SE(~tll@ ICIIS = 10
-
~
;5 O. 6
Q
...'"~
I
1/
V
TJ = 25°C
...-::
5.0
20
10
30
5.0
50
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
FIGURE 12 - TEMPERATURE COEFFICIENTS
+0.8
3;
I
I--
E
+0.8
I II
I II
'APPLIES FOR Ic/lS < hFE/5
I-~+O.4
...-
E
~5~OC to 25 0 e -
<3
25 0 e to 150 0 e
'eVC FO R VeE("t)
~
!
-0.4
8
-0.8
iil
~ -1.6
....
i
-
evis F? RIV~EI
I - _I'"""
3.0
20
30
50
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
70
100
II
11,/
I ~
.;;,;r: ....-
25ciCtol15tioci
'eYe for VCE("t)
55Jc \01215°C -
~ -0.4
LLJ
-0. 8
~
-1.2
'"=>
....
il'it~
-2.0
2.0
I-- r-
~
-
'"
~ -1.2
+0.4
iil
8
w
~
>:
I
'APPLIES FOR IC/IS" hFE/5
<..>
o
-.- -
/
-1. 6
~
9VS for YSE
-2.0
2.0
200
5.0 7.0
3.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (pA)
FIGURE 13 - COLLECTOR CUTOFF REG'ON
105
-
,
VCE-200Y
-
TJ = 150°C
,
./
,
r-
VCE=200V
r-- I-TJ
150°C
100°C
100°C
I
,
.......
1
1
L
25°C
~
10- 1
+0.4
+0.3
+0.1
~
FORrARO
REYIERSE
+0.2
25°C
-0.1
-0.2
-0.3
-0.4
-0.5
10- 1
-0.4
-0.6
VSE, SASE·EMITTER VOLTAGE (VOLTS)
-0.3
REY~RSE
-0.2 -0.1
+0.1 +0.2 +0.3 +0.4
YSE, SASE·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-98
F?RWARlO=
~
+0.5 +0.6
2N3439, 2N3440 NPN / 2N5415, 2N5416 PNP
FIGURE 14 - BASE CUTOFF REGION
104
-
!
c--
TJ - 1500C
VCE-200V-
VCP200V-
.......
1000C
102
TJ 1500C
1000C
2
.....
I-
i:i'i
'"
'"i3
10 I
I
w
~
IE
25 0C
100
250C
10 0
~
10-1
+0.4
== RErERSE
+0.3
+0.2
+0.1
FORfARO
-0.1
-0.2
-0.3
-0.4
~ 1= REV1ERSE
~
-0.5
10-I
-0.4
-0.6
-0.3
-0.2
FORYARO
+0.1
-0.1
+0.2
+0.3
+0.4
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VBE. BASE·EMITTER VOLTAGE (VOLTS)
25 mH
VCC (0 to 50 V.
100 mAl
Channel A
FIGURE 15 - CIRCUIT USED TO MEASURE
SUSTAINING VOLTAGES
TUT
To
Oscilloscope
Channel B
lOll
0.5W
Common
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-99
~
+0.5
+0.6
II
2N3444
For Specifications, See 2N3252 Data.
2N3467
2N3468
MAXIMUM RATINGS
Symbol
2N3467
2N3468
Unit
Collector-Emitter Voltage
Rating
VCEO
40
50
Vdc
Collector-Base Voltage
VCBO
40
50
Vdc
Emitter-Base Voltage
VEBO
5.0
IC
1.0
Adc
Collector Current -
•
Continuous
Vdc
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
1.0
5.71
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205ADI
,f .:.-EQ
3 Collector
1 Emitter
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
35
°CIW
Thermal Resistance, Junction to Ambient
RruA
0.175
°C/mW
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
Collector Cutoff Current
(VCE = -30 Vde, VBE
= 3.0 Vde)
Collector Cutoff Cu rrent
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
40
50
-
Vdc
-
-
Vdc
IBEV
-
120
nAde
ICEX
-
100
nAde
-
0.10
15
-
ICBO
=
-
5.0
V(BR)EBO
= 3.0 Vdc)
40
50
,V(BR)CBO
2N3467
2N3468
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Base Cutoff Current
(VCE = -30 Vde, VBE
Vdc
V(BR)CEO
2N3467
2N3468
100°C)
/LAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 150 mAde, VCE
(lC
(lC
= 500
=
mAde, VCE
1.0 Ade, VCE
=
hFE
=
1.0 Vde)
2N3467
2N3468
40
25
=
1.0 Vde)
2N3467
2N3468
40
25
120
75
2N3467
2N3468
40
20
-
5.0 Vde)
Collector-Emitter Saturation Voltage(l)
(IC = 150 mAde, IB = 15 mAde)
(lC
= 500 mAde, IB =
(lc
=
1.0 Ade, IB
=
50 mAde)
100 mAde)
VCE(sat)
2N3467
2N3468
2N3467
2N3468
-
2N3467
2N3468
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VBE(sat)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-100
0.8
-
-
Vde
0.3
0.36
0.5
0.6
1.0
1.2
Vdc
1.0
1.2
1.6
2N3467,2N3468
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25°C unless otherwise noted.)
I
Characteristic
Min
Max
175
150
-
Cobo
-
25
pF
Cibo
-
100
pF
td
-
Symbol
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 50 mAde, VCE ~ 10 Vdc, 1 ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc, IE
Input Capacitance
(VEB ~ 0.5 Vdc, IC
~
~
~
0, 1
0, 1
~
fr
2N3467
2N3468
MHz
100 kHz)
100 kHz)
SWITCHING CHARACTERISTICS
Rise Time
(IC ~ 500 mA, IB1 ~ 50 mA, VBE
2.0 V, VCC ~ 30 V)
Storage Ti me
(lc
Delay Time
~
10
n.
30
n.
60
n.
ts
-
Fall Time
tl
-
30
ns
Total Control Charge
(lC ~ 500 mA. IB ~ 50 mA. VCC
QT
-
6.0
nC
(1) Pulse Test: PW
~
~
~
500 mA. IB1
~
IB2
~
tr
50 mA, VCC
~
30 V)
30 V)
~
300 1'5, Duty Cycle
2.0%.
STORAGE TIME VARIATION WITH TEMPERATURE
200
I
I
!
.~ I ~
le= 101. 1 = lOin
Vee = 30V
- - TJ :::: 25°C
- - -T = 125°C
, II I
-
;;; 100
oS
'":E
--
fl,
;:::
'"
70
t;
50
~0
-
10,20
'I .1
{l,I= [0 po.
~
~,I=ror-.
,;
30
I I
t',=ts-lht,
II
20
50
70
200
300
500
Ie. COllECTOR CURRENT (rnA)
100
700
1000
LIMITS OF SATURATION VOLTAGE
1.6
1.4
~
0
1.2
~
1.0
z
0
0.8
'"::>
0.6
...
~
g
~
:c
III
I I
--
-
-...--
i-"'"
MAX
~
VHI..t
I
MIN
I--i"""
.... r-
'"1 0.4
",
{l,= 10
T, = 25°C
-
MAX Vo" ••
-
""
V
./
2N3468 ./'./
_r-"': ......
2N3467 r--
r-::: ......
>
0.2
I
a
50
70
100
I
I
500
300
200
Ie, COLLECTOR CURRENT (rnA)
700
1000
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-101
II
2N3467,2N3468
MINIMUM CURRENT GAIN CHARACTERISTICS
-
70
f--50
~
I'"
-
' - r - 1---
T, _ 25°C
-
I-
z
-r---
r-
•
-
-~
'"
l-
Z
'-r- -
I--
......
........
-- I"':
--- -
-
20
.....
\
2~34J7IV-
Va
Va
'\.
t---
"-
T, = -55°C
<.>
~
r--
30
::E
::E
~
--
T, = 125°C
1-- t--
2V
,
"-
\
"'\."
",,\
~ \. \
\
\'
,~
~ t\ '\ ~\
\
~\
10
50
70
200
100
700
500
300
1000
Ie. COLLECTOR CURRENT (mAl
70
2NI346J - - VCI= IV
-
50
T, = 125°C
z
~
!i;
i
30
<.>
'"
::E
'"
::E
~
1--
-
Z
~
--- -
-
- - ----- --
-
~~=}::C_ _
I-- -
~ 1-
-
I-
70
100
.........
200
300
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-102
"
,\
,\
~l\." ,
---.:: \
"-~ ~
-- ---
T, = -55°C
1---
10
50
r.....
~"
i- -
Vcli =2V
-.r- ........
20
-- -
- -
500
".
........
700
\
1000
2N3485,Al2N3486,A For Specifications, See 2N2904,A Data.
2N3494
2N3495
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
2N3494
2N3496
2N3495
2N3497
Unit
Collector-Emitter Voltage
VCEO
80
120
Vdc
Collector-Base Voltage
VCBO
80
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
100
mAdc
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Po
25°C
Total Device Dissipation @ TC '" 25°C*
Derate above 25°C
Operating and Storage Junction
Temperature Range
Po
TJ, Tstg
120
2N3496
2N3497
600
3.43
400
2.28
mWrC'
3.0
17.2
1.2
6.85
mWrC
-65 to +200
3 Collector
Vdc
2N3494
2N3495
mW
Watts
°C
,ff!
2N3496
2N3497
~.()
1 Emitter
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
*Indicates Data in addition to JEDEC Requirements.
,1 •
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
Vdc
V(BR)CEO
2N3494, 2N3496
2N3495, 2N3497
80
120
V(BR)CBO
2N3494, 2N3496
2N3495, 2N3497
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
80
120
V(BR)EBO
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 90 Vdc, IE = 0)
ICBO
2N3494, 2N3496
2N3495, 2N3497
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
4.5
-
-
-
Vdc
Vdc
nAdc
-
-
100
100
-
25
35
-
nAdc
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 100 pAdc, VCE = 10 Vdc)
(lc = 1.0 mAdc, VCE = 10 Vdc)
(lC = 10 mAdc, VCE = 10 Vdc)
(lC = 50 mAdc, VCE = 10 Vdc)
(lC = 100 mAdc, VCE = 10 Vdc)
hFE
40
40
40
35
2N3494, 2N3496
Collector-Emitter Saturation Voltage
(lC = 10 mAde, 'B = 1.0 mAdc)
VCE(sat)
2N3494, 2N3496
2N3495, 2N3497
Base-Emitter Saturation Voltage
(lC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
-
Vdc
-
0.3
0.35
0.6
0.9
200
150
-
-
-
7.0
6.0
-
30
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
MHz
fT
2N3494, 2N3496
2N3495, 2N3497
Cobo
2N3494, 2N3496
2N3495, 2N3497
Input Capacitance
(VBE = 2.0 Vdc, IC = 0, f = 100 kHz)
Cibo
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-103
pF
pF
2N3494,2N3495,2N3496,2N3497
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Input Impedance
(lC = 10 mAde, VCE = 10 Vdc, I = 1.0 kHz)
hie
0.1
1.2
k ohms
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
h re
-
2.0
X 10-4
Small-Signal Current Gain
(lC = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
hie
40
300
-
Output Admittance
(lC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
hoe
300
"mhos
30
Ohms
Characteristic
Re(hie)
-
Turn-On Time
(VCC = 30 Vde, IC = 10 mAde, 181 = 1.0 mAde)
ton
-
300
ns
Turn-Off Time
(VCC = 30 Vde, IC = 10 mAde, 181 = 182 = 1.0 mAde)
toff
-
1000
ns
Real Part of Input Impedance
(lc = 20.mAde, VCE = 10 Vde, f = 300 MHz)
•
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse Width", 300 "", Duty Cycle = 2.0%.
(2) fr is defined as the Irequency at which Ihlel extrapolates to unity.
FIGURE 1 - TURN-ON TIME TEST CIRCUIT
FIGURE 2 - TURN-OFF TIME TEST CIRCUIT
12l r-
-30 V o--'lfIII.---,
-1~'
I
;*~ C, < 3.0 pF
10 k
-+91
-30 V 0---'1.""'---,
3.0 k
I
10 k
;f;:Cs < 3.0 pF
--I,,~
__ ...II
__ ...II
lN91S
10"'''11 "500",
t2"; 10 ns
10 ns
11 "'0",
DUTY CYCLE" 2.0%
tr~
t3;;a.1.0ms
DUTY CYCLE" 10%
FIGURE 3 - VCE (sat) versus IC
FIGURE 4 - ICBO versus TA
~-O.5
g
:~= 10 NOTE 1
to
~-:O.4
c:>
~
~ -0.3
TA
TA
TA
!
:E -0.2
125°C
25·~t
-55~C
~
13
~ -0.1
8
~
$'
0
-0.1
-1.0
-0.01
-10
-100
IC-COLLECTOR CURRENT (mAl
o
VC=-IOVNTEI
c:>
~
;
160
FIGURE 6 - VBE versus IC
Io
Tl!
~ -0.8
~~lIJ
w
g'"
"
c:>
>
~
~
111111I
TA
40
o
::0.1
=-55°C
"'
~
TlIIIIII
!G
11111111
-1.0
-0.6
'"
~
81.1
Ii!
~~
=125'<11;
1111111'
1111111
e: 120
100
-1.0
IJ 111111
TA
75
TA = FREE-AIR TEMPERATURE (0C)
FIGURE 5 - hFE versus IC
200
50
25
II 11111
II 11111
~
~
I-~
I IJi
TA = 25°C
-0.4
I J..I..H
TA = 125°C
-0.2
11111
I--:~ = 10 NOTE 1
-0.4 -1.0
-10
-100
IC-COLLECTOR CURRENT (mAl
NOTE 1: THESE PARAMETERS WERE
MEASURED USING PULSE
TECHNIQUES. tw = 300 "'.
DUTY CYCLE';;; 2%.
11111
-4.0 -10
I II 11111
-40 -100
IC-COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-104
I II
125
2N3494,2N3495,2N3496,2N3497
FIGURE 8 - COBO versus VCB
FIGURE 7 - fT versus IC
10
250
~ 225
~ 8.0
~ 200
>--
~ 175
u
z
c
'"
8:
'"
b
~
!
150
1'>
u 6.0
125
5
~
>--
100
~ 4.0
V
75
'"o
~ 50
.£ 25
8
f = 100 MHz
~A ~ 2;5~~1
TA = 25°C
lNOTE 211
VCE = 10 V
'"
1.0
IE = 0 V
f- 10 MHz
2.0
-0.4
5.0 10
50 100
IC-COLLECTOR CURRENT (mAl
-1.0
-50 -10
-50 -100
VCB-COLLECTOR-BASE VOLTAGE (VI
FIGURE 9 - CIBO versus VEB
30
r-..
~ 24
'\
IC=O V
1-1.0 MHz
Tf =;
2~~11
INOTE211
-0.1
-10
-10
VEB-EMIITER-BASE VOLTAGE (V)
-100
NOTE 2. CAPACITANCE MEASURE MADE WITH TO-1B PACKAGE
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-105
•
2N3498 thru 2N3501
MAXIMUM RATINGS
Symbol
2N3498
2N3499
2N3500
2N3501
Unit
Collector-Emitter Voltage
VCEO
100
150
Vde
Collector-Base Voltage
VCBO
100
150
Vde
Emitter-Base Voltage
VEBO
300
mAde
Rating
Collector Current -
II
Continuous
IC
JAN, JTX, JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Vde
6.0
500
Total Device Dissipation @ TA
Derate above 25"C
~
25"C
PD
1.0
5.71
Watt
mW/"C
Total Device Dissipation @ TC
Derate above 25"C
~
25"C
PD
5.0
28.6
Watts
mW/"C
TJ, Tstg
-65 to +200
"C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Charactaristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
35
"CfW
Thermal Resistance, Junction to Ambient
RruA
175
"CfW
ELECTRICAL CHARACTERISTICS (TA
GENERAL PURPOSE TRANSISTOR
NPN SILICON
~ 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage (1)
(lC ~ 10 mAde, IB ~ 0)
2N3498, 2N3499
2N3500, 2N3501
V(BRICEO
100
150
Collector-Base Breakdown Voltage
(lC ~ 10 pAde, IE ~ 0)
2N3498, 2N3499
2N3500, 2N3501
V(BR)CBO
100
150
V(BR)EBO
6.0
Emitter·Base Breakdown Voltage
(IE ~ 10 pAde, IC ~ 0)
Collector Cutoff Current
(VCB ~ 50 Vde, IE ~ 0)
(VCB ~ 50 Vde, IE ~ 0, TA ~ 150"C)
(VCB ~ 75 Vde, IE ~ 0)
(VCB ~ 75 Vde, IE ~ 0, TA ~ 150"C)
ICBO
-
2N3498, 2N3500
2N3499, 2N3501
(lC ~ 1.0 mAde, VCE ~ 10 Vde)
-
-
25
20
35
-
-
2N3498, 2N3500
2N3499, 2N3501
25
50
-
(lC ~ 10 mAde, VCE ~ 10 Vde)
2N3498, 2N3500
2N3499, 2N3501
35
75
-
-
(lC ~ 150 mAde, VCE ~ 10 Vde)
2N3498, 2N3500
2N3499, 2N3501
40
100
-
120
300
(lC ~ 300 mAde, VCE ~ 10 Vde)
2N3500
2N3501
15
20
-
-
(lC ~ 500 mAde, VCE ~ 10 Vdel
2N3498
2N3499
15
20
-
-
-
-
-
-
-
Emitter Cutoff Current
(VBE(off) ~ 4.0 Vde, IC ~ 0)
lEBO
Vde
-
0.050
50
0.050
50
2N3500, 2N3501
Vde
pAde
-
2N3498, 2N3499
-
Vde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC ~ 0.1 mAde, VCE ~ 10 Vde)
Collector-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
(lC ~ 50 mAde, IB ~ 5.0 mAde)
(lC ~ 150 mAde, IB ~ 15 mAde)
(lC ~ 300 mAde, IB ~ 30 mAde)
hFE
VCE(sat)
All Types
All Types
2N3500, 2N3501
2N3498, 2N3499
-
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-106
-
-
-
Vde
-
-
0.2
0.25
0.4
0.6
2N3498 thru 2N3501
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25'C unless otherwise noted)
Characteristic
Symbol
Base-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
(lc ~ 50 mAde, IB ~ 5.0 mAde)
(lC ~ 150 mAde, 18 ~ 15 mAde)
(lC ~ 300 mAde, IB ~ 30 mAde)
Min
Typ
Max
-
-
O.B
0.9
1.2
1.4
150
-
-
Cobo
-
-
10
B.O
pF
-
Cibo
-
-
BO
pF
0.2
0.25
-
1.0
1.25
k ohms
-
VBE(sat)
All Types
All Types
2N3500, 2N3501
2N349B, 2N3499
-
Unit
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(VCE ~ 20 Vde, IC ~ 20 mAde, I ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vde, IE
Input Capacitance
(V BE ~ 0.5 Vde, IC
~
0, I
~
0, I
~
~
IT
2N349B, 2N3499
2N3500, 2N3501
100 kHz)
100 kHz)
~
1.0 kHz)
2N349B, 2N3500
2N3499, 2N3501
hie
10 Vde, I
Voltage Feedback Ratio
(lc ~ 10 mAde, VCE ~ 10 Vde, I
-
1.0 kHz)
2N349B, 2N3500
2N3499, 2N3501
h re
~
hie
50
75
hoe
Input Impedance
(lc ~ 10 mAde, VCE
~
Small-Signal Current Gain
(lc ~ 10 mAde, VCE ~ 10 Vde, I
~
1.0 kHz)
2N349B, 2N3500
2N3499, 2N3501
Output Admittance
(IC ~ 10 mAde, VCE
~
1.0 kHz)
2N3498, 2N3500
2N3499, 2N3501
~
10 Vde, I
MHz
2.5
4.0
X 10-4
-
300
375
-
-
-
100
200
/kmhos
td
-
20
-
ns
tr
-
35
-
ns
ts
-
BOO
-
ns
tl
-
BO
-
ns
-
SWITCHING CHARACTERISTICS
Delay Time
(lc ~ 150 mAde, IBI
~
15 mAde, VCC
~
100 Vde, VBE(off)
~
2.0 Vde)
Rise Time
(lc ~ 150 mAde, IBI
~
15 mAde, VCC
~
100 Vde, VBE(off)
~
2.0 Vde)
Storage Time
(lc ~ 150 mAde, IBI
~
IB2
~
15 mAde, VCC
~
100 Vde)
Fall Time
(lc ~ 150 mAde, IBI
~
IB2
~
15 mAde, VCC
~
100 Vde)
(1) Pulse Test: Pulse Width", 300 /kS, Duty Cycle'" 2.0%.
(2) IT ~ Ihlel· ftest·
FIGURE 1 - CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
2N3498
200
VCE
TJ
z
~
2.0V _
~ 12hoc
100
~
~
70
'"'"=>
'-'
0
'-'
'"w
0
0
'" ,
25°C
-
--
0
10
~
-55 0 C
~
'~
I--
~~
20
30
50
70
10
20
30
50
70
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-107
100
200
~~
300
500
•
2N3498 thru 2N3501
2N3499
300
~/o 125°C
200
25~C
z
~
ffi
t-
'"=>
'"
.
u
u
0
I
I
VCEo2,OV _
"
100
r--......
~
-55°C
70
50
;
,
""-~......
I"
........
30
,
~
~ ...
20
~
'
10
10
20
30
50
70
10
20
30
50
70
200
100
300
500
IC, COLLECTOR CURRENT (mAl
FIGURE 2 - CURRENT GAIN CHARACTERISTICS versus COLLECTOR-EMITTER VOLTAGE
1.5
2N3498,2N3499
TJ ° 25°C
o
W
N
1.0
«
~
~
o. 7
:::;
z
;;0
'"t-
0,
I'
5""""
r-.
"- "-
"
ffi
a
'"
o. 3
1.0 V,,"
u
o
~
o. 2
1
10
20
30
50
7,0
10
20
30
50
70
IOV
VCE
""-
",\
"-
"~"V
\
"-r\. (\.
r"
100
300
500
IC,COLLECTOR CURRENT (mAl
FIGURE 3 - CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
2N3600
200
)CE ° 2:JV_
z
100
;;0
'"
~
~
=>
u
10
0
u
c
~
0
0
0
---
1.0
TJ
j 125 h
0
........
25°C
I""-
r--.
-55°C
........
........ ~
~
~~
~~
2,0
3,0
50
70
10
20
30
50
70
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-108
~~
100
200
300
500
2N3498 thru 2N3501
2N3501
--
20 0
TJ" 125°C
t--
'";;0
2loc
10 0
I
I
.............
VCE"20V-
......
'"
I-
ffi
0
"'
G
0
"'
u
-SSoC
I't:'o..
"'-~~
0
;
t-30
~
20
~
~
0
10
20
30
So
70
10
20
so
30
70
100
200
300
~
SOO
IC, COLLECTOR CURRENT (mAl
FIGURE 4 - CURRENT GAIN CHARACTERISTICS versus COLLECTOR-EMITTER VOLTAGE
IS
2N3S00·2N3S01
TJ" 2SoC
0
N
~
«
~
0
1.0
.....
......
0.7
<0
z
;;;
,-VCE -IOV- r--
......
O.S
0
03
10~ ~V
02
0.1
I\.
...... .......
u
;
'\
""'-
ffi
"'"'
G
'\.
..... ..........
'"
I-
10
20
30
50
7.0
10
20
30
SO
70
IC,COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-109
100
200
'"
~
t.......
~~
300
soo
•
2N3498 thru 2N3501
FIGURE 5 - "ON" VOLTAGES
2
I
II
ICI1B 010
TJ 0 250C
/
10
v;-
/
V
08
':3
o
•
VBE 1..--' ......
2:
'""'
~
o
>
06
z
~
..... ~- I--~
~
P
12N35~
04
.j,~ II
LJ. ~~
2~3~0~.
VCElsal)
o
10
20
50
10
~
- ' ...
20
'1
i----J,
2~3J9J
02
v'1
2Ni49j
100
50
200
I
500
IC. COLLECTOR CURRENT ImA)
FIGURE 7 - CAPACITANCE
FIGURE 6 - TEMPERATURE COEFFICIENTS
+1.0
LCfolCEIJ
+0 5
/'
~
~
100
........ ~I01'2~OC)
·1- -I
0
0
",...,.
30
20
-
5
UVB for VBElsal)
125°C 10 -55°C)
5
""".
rf'lY
1250~
...-
C~i'
iiiiiio;
iiiiiio; -~
-~
..... i'o.
0
2N3498,2N3499
Cob
5. 0
......
i'
......
1-0..
30
10 125 0CI
2N3500,2N3501
2.0
-2. 0
-2 .5
r---
125°C 10 -55°C)
10
100
200
300
400
500
0.1
0.2
05
1.0
2.0
5.0
10
20
REVERSE BIAS VOLTAGE IVOLTS)
IC. COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-110
50
100
2N3498 thru 2N3501
AUDIO SMALL-SIGNAL h PARAMETER CHARACTERISTICS
(VCE
= 10 Vdc. T A = 25°C. f = 1.0 kHzl
FIGURE 9 - OUTPUT IMPEDANCE
FIGURE 8 - CURRENT GAIN
0
400
300
0
ALL TYPES
20
200
z
;;'
E
'"
~
2N3499.2N3501
~
~
~~
=>
u
~
:::l
'"
"?
~
~
100
80
"""'"
i"""
«
60
1--"",10./
40
~
~
..... I-"""
-"
w
i--'i'"
-
2N3499,2N3501
u
~
>>-
10
~
70
,.
...
~ .....
1li
.,;
:E
)~
~
-
~ """'"
--'
30
'7
i--'
......
50
;
2N3498.2N3500
II
I.......
~
~
V
V
./
2N3498.2N3500
~i""
./
20
02
03
05
OJ
20
10
30
50
70
10
10
02
01
03
,
30
\
\
\.
'\..
\
0
\
\
1\
\
0
2N 3499,2N3501
0
50
70
10
"-
0
'\
2N3499.2N3501
"
0
" "\.
0
~
0
2N3498,2N3500
\
0
"' \..
'\.
I\..
8
I"
6
0
7
4
05
07
10
20
30
~
I\. i'
I'
03
"'\.
~
'- '-
02
30
r\.
2N3498. 2N3500 '\\.
01
20
r'\.
O~
'\.
0
0
10
0
~
0\
07
FIGURE 11 - VOLTAGE FEEDBACK RATIO
FIGURE 10 -INPUT IMPEDANCE
0
05
IC. COLLECTOR CURRENT ImAI
IC. COLLECTOR CURRENT {mAl
50
70
5
10
IC, COLLECTOR CURRENT ImAI
01
02
03
05
07
10
20
30
Ie, COLLECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-111
50
70
10
2N3506
2N3507
MAXIMUM RATINGS
Symbol
2N3506
2N3507
Unit
Collector-Emitter Voltage
VCEO
40
50
Vdc
JAN, JTX, JTXV AVAILABLE
Collector-Base Voltage
VCBO
60
80
Vdc
CASE 79-02, STYLE 1
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
3.0
Adc
Rating
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
1.0
5.71
Watt
mWfC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
5.0
28.6
Watts
mWfC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
TO-39 (TO-205AD)
THERMAL CHARACTERISTICS
SWITCHING TRANSISTOR
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
0.175
°C/mW
Thermal Resistance, Junction to Ambient
R8JA
35
°CIW
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
40
50
Max
Unit
-
Vde
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC ~ 10 mAde, pulsed, IB ~ 0)
2N3506
2N3507
V(BR)CEO
Collector-Base Breakdown Voltage
(lC ~ 100 !LAde, IE ~ 0)
2N3506
2N3507
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE ~ 10 !LAde, IC ~ 0)
Collector Cutoff Current
(VCE ~ 40 Vdc, VE8(off)
(VCE ~ 40 Vdc, VEB(off)
(VCE ~ 60 Vde, VEB(off)
(VCE ~ 60 Vdc, VEB(off)
V(8R)EBO
ICEX
~
4.0
~ 4.0
~ 4.0
~ 4.0
Vde)
Vde, TA ~ 100°C)
Vde)
Vdc, TA ~ 100°C)
Base Cutoff Current
(VCE ~ 40 Vde, VEB(off) ~ 4.0 Vdc)
(VCE ~ 60 Vdc, VEB(off) ~ 4.0 Vdc)
60
80
5.0
-
-
!LAde
2N3506
-
2N3507
-
-
1.0
150
1.0
150
!LAde
IBL
2N3506
2N3507
Vde
-
1.0
1.0
50
35
40
30
30
25
25
20
-
-
ON CHARACTERISTICS
DC Current Gain(l)
(lC ~ 500 mAde, VCE ~ 1.0 Vde)
-
hFE
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
(lC ~ 1.5 Ade, VCE ~ 2.0 Vde)
(lc ~ 2.5 Adc, VCE ~ 3.0 Vdc)
(lc ~ 3.0 Adc, VCE ~ 5.0 Vde)
Collector-Emitter Saturation Voltage(l)
(lC ~ 500 mAde. IB ~ 50 mAde)
(lC ~ 1.5 Ade, IB ~ 150 mAde)
(lc ~ 2.5 Ade, 18 ~ 250 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lc ~ 500 mAde, IB ~ 50 mAde)
(lc ~ 1.5 Ade, 18 ~ 150 mAde)
(lC ~ 2.5 Adc, IB ~ 250 mAde)
VBE(sat)
-
200
150
-
0.5
1.0
1.5
Vde
1.0
1.4
2.0
Vdc
60
-
MHz
-
40
pF
300
pF
-
0.9
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
~
~
(lC ~ 100 mAde, VCE ~ 5 Vde, f ~ 20 MHz)
10 Vde, IE
3 Vdc, IC
~
~
0, f
0, f
~
~
100 kHz)
fr
Cobo
100 kHz)
Cibo
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-112
2N3506,2N3507
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"e unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Ie = 1.5 Adc, IB1 = 150 mAdc
td
-
15
ns
Rise Time
Vee = 30 V, VEB = 0 V
tr
-
30
ns
Storage Time
Ie = 1.5 Adc, IB1 = IB2 = 150 mAdc
Is
-
55
ns
Fall Time
Vee = 30 V
If
-
35
ns
(1) Pulse Test: Pulse Width", 300 ILs, Duty Cycle
=
2.0%.
SWITCHING TIMES
SATURATION VOLTAGES
1.4
I
I
>---~,= 10
1.2 f-- TJ = 25"C
./
YHI~
--
1.0
0.'
0.6
o. 4
100
0
0.1
0.2
0.3
0
1
'"
YeEIM'I/ ~ t-
0.5
If .'
IIIIit..
t--t.
V
-'-
30
./
Yee lOYVE. 2Y le= 101,,I" =1.. TJ = 25'C_
~
.r
50
-
o. 2
t"
......
'......" I'IIIiI
r-..
~
0
I
r.
t- Itt
~ t--.
I,
r-...
2.0
1.0
10
0.1
3.0
r- ....
t,
....... (00..,
t.."i
0.2
0.3
0.5
0.7
1.0
2.0
3.0
/C. COlLECTOR CURRENT lAde)
Ie. COlLECTOR CURRENT fAde)
CURRENT GAIN CHARACTERISTICS
20 0
200
TJ
= 12S'C
TJ}25"C-
r--
100
-
-
r-
I-r-.
02
o
10
"....... ...'\., \.
..........~
r-
03
05
10
10
2N3507
=-=t-=+.::.:I'- . . . . . . .
-
- TJ ,,25'C
TJ I"_sloc
0 - - · ...... -
",. I'--~ 1',,\
'"
l
_ T J l(15 C
Ve• I V
...... - - Ve ."2V
T~-55"C
0
20
01
2N3506
......
--Vcf=lV
-
-Yc (=2V
......
- -r-.
'.
f'I.. " .
'\., I'"
~~ [\.'\['1..
........
30
0
01
01
03
05
10
(c. COLLECTOR CURRENT (Adel
Ie. COLLECTOR CURRENT (Adel
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-113
~ t~
10
30
•
2N3546
MAXIMUM RATINGS
Rating
•
Symbol
Value
Collector-Emitter Voltage
VCEO
12
Unit
Vde
Collector-Base Voltage
VCBO
15
Vde
Emitter-Base Voltage
VEBO
4_5
Vde
DC Collector Current
IC
200
mAde
Watt
mWFC
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
PD
0.36
2.06
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
1.2
6.9
Watts
mWFC
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rwc
0.15
°C/W
Thermal Resistance, Junction to Ambient
RWA
0.49
°C/W
Operating and Storage Temperature
Temperature Range
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
!! ":~,~
3 Collector
'"
THERMAL CHARACTERISTICS
Characteristic
SWITCHING TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
12
V(BR)CBO
15
-
V(BR)EBO
4.5
-
Vde
0.10
pAde
0.010
pAde
0.010
10
pAde
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
(VCE
=
(lc
(IE
=
(lC
=
=
10 pAde, IC
10 Vde, VBE(off)
Collector Cutoff Current
(VCE
Collector Cutoff Current
(VCB
(VCB
=
=
=
10 mAde, IB
10 pAde, IE
=
=
0)
0)
0)
3.0 Vde)
10 Vde, VBE(off)
10 Vde)
10 Vde, TA
=
=
=
IBEV
3.0 Vde)
ICEX
ICBO
=
150°C)
-
Vde
Vde
ON CHARACTERISTICS
DC Current Gain (1)
(lC = 1.0 mAde, VCE =' 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde, TA
(IC = 50 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
hFE
=
20
30
15
25
15
-55°C)
Collector-Emitter Saturation Voltage (1)
(lC = 10 mAde, IS = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lc = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage (1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lc = 100 mAde, IB = 10 mAde)
VBE(sat)
-
-
120
-
-
-
Vde
-
0.15
0.25
0.50
0.7
0.8
-
0.9
1.3
1.6
700
-
Cobo
-
6.0
pF
Cibo
-
5.0
pF
-
Vde
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
=
0, f
=
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
=
0, f
=
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-114
MHz
2N3546
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
IC = 50 rnA, IBI = 5.0 rnA
VBE = 2.0 V, VCC = 3.0 V
td
-
10
ns
tr
15
ns
IC = 50 rnA, IBI = IB2 = 5.0 rnA
VCC = 3.0 V
ts
-
20
ns
tf
15
ns
40
n.
Turn-On Time
ton
-
Turn-Off Time
toff
-
30
ns
Total Control Charge
(lC = 50 rnA, IB = 5.0 rnA, VCC = 3.0 V)
aT
-
400
pC
Fall Time
(1) Pulse Test: PW = 300
,"S,
FIGURE 1
FIGURE
LIMITS Of SATURATION VOLTAGES
1.6
2
STORAGE TIME BEHAVIOR
30
p.= 10
1.4
--.~.- ;;::'''-'r-_
_ TJ=25"C
20 - P , = I O
V
2
0
/j
-
-
.,.
_ MAX VIE('.'l
/'
t,'=t.-I.,.t,
III =112
L
4
2f-- f - f0
10
I
LI
M~X Ve~I":1
I I
2.0
5.0
<..... r-....
10 - - TJ=25"C
. - - - TJ=125"C
MINVIEI ••tl
6
...
10
20
50
5
10
-
-r-
P. = 20':::::"" 1' ....
---....
,;'
8
•
Duty Cycle'" 2.0%.
1' ....
r-- r-..
r-.... r....
~ r....
!"'..
I'
1',
r-....
I'
"
20
50
30
70
100
Ie. COLLECTOR CURRENT ImAi
100
Ie. COLLECTOR CURRENT ImAl
FIGURE 3
FIGURE 4
FIGURE 5
DElAY AND RISE TIME
EnUiVALENT TEST CIRCUIT
-3 V
STORAGE AND FALL TIME
EQUIVALENT TEST CIRCUIT
SWITCHING TIME TEST CIRCUIT
VSB
-2 V
-3 V
100 n
55
n
55
n
0.1 "F
Y,n o----1l-4>-JYIllr- 200 ns
RISE TIME < Z ns
lin = 50 n
-10.8V
PULSE WIDTH = ZOO ns
RISE TIME';; 2 ns
DUTY CYCLE';; 10%
n
I
.. *
Yin +2
62
~1.,--'OVout*
PULSE WIDTH = 200 ns
RISE TIME';; 2 ns
DUTY CYCLE.;; 10%
'OSCILLOSCOPE RISE TIME';; I ns
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-115
ton Vaa = +3 V, Vrn = -7 V
toll. Vaa = -4 V, Vrn =+6 V
2N3546
FIGURE 6
MINIMUM CURRENT GAIN CHARACTERISTICS
0
~
0
0---
•
:;:-;..- r--
---
0--- ----
.-
TJ = 125'C
.... - - 1 - - - - - - r--
-- -
50
... -:
......,
-
-
TJ
=25'C
-- - '-
-
--Vc,=IV
- - - Vc,=2V
~.....
. . . i"-.
'-
--
TJ =-55'C
r-~
--.....;
--
~
--
.......
""
-......: .~~.
N ...·
\,
......:.::::::
r==:::.: ~ .....
.......
7
1.0
2.0
3.0
5.0
7.0
10
20
Ie. COlLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-116
30
50
70
""
"
100
2N3634
thru
2N3637
JAN, JTX AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-39-205AD)
MAXIMUM RATINGS
Symbol
2N3634
2N3635
2N3636
2N3637
Unit
Collector-Emitter Voltage
VCEO
140
175
Vde
Collector-Base Voltage
VCBO
140
175
Emitter-Base Voltage
VEBO
5.0
Rating
Iii1
Vde
3~1[
Vde
~.()"~'
IC
1.0
Ade
Total Device Dissipation @ TA
Derate above 25'C
~
25'C
PD
1.0
5.71
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
PD
5.0
28.6
Watts
mWrC
GENERAL PURPOSE
TRANSISTOR
TJ, Tstg
-65 to +200
'c
PNPSILICON
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
1 Emitter
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC ~ 10 mAde, IB ~ 0)
Collector-Base Breakdown Voltage
(lC ~ lOa pAde, IE ~ 0)
Vde
V(BR)CEO
2N3634, 2N3635
2N3636, 2N3637
140
175
-
140
175
5.0
-
Vde
Vde
V(BR)CBO
2N3634, 2N3635
2N3636, 2N3637
Emitter-Base Breakdown Voltage
(IE ~ 10 pAde, IC ~ 0)
V(BR)EBO
Collector Cutoff Current
(VCB ~ 100 Vde, IE ~ 0)
ICBO
-
lOa
nAde
Emitter Cutoff Current
(VBE ~ 3.0 Vde, IC ~ 0)
lEBO
-
50
nAde
40
ON CHARACTERISTICS
DC Current Gain(l)
(lC ~ 0.1 mAde, VCE ~ 10Vde)
hFE
2N3634, 2N3636
2N3635, 2N3637
80
-
2N3634, 2N3636
2N3635, 2N3637
45
90
-
2N3634, 2N3636
2N3635, 2N3637
50
100
-
(lC ~ 50 mAde, VCE ~ 10 Vde)
2N3634, 2N3636
2N3635, 2N3637
50
100
150
300
(lc ~ 150 mAde, VCE ~ 10 Vdel
2N3634, 2N3636
2N3635, 2N3637
25
50
-
-
0.3
0.5
-
0.8
0.9
(lC
~
1.0 mAde, VCE
~
10 Vde)
(lC ~ 10 mAde, VCE ~ 10 Vde)
Collector-Emitter Saturation Voltage(1)
(lC ~ 10 mAde, IB ~ 1.0 mAde)
(lC ~ 50 mAde, IB ~ 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC ~ 10 mAde, IB ~ 1.0 mAde)
(lc ~ 50 mAde, IB ~ 5.0 mAde)
VBE(sat)
2N3634, 2N3636
2N3635, 2N3637
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-117
-
Vde
0.65
Current-Gain - Bandwidth Product
(VCE ~ 30 Vde, IC ~ 30 mAde, f ~ 100 MHz)
-
Vde
-
SMALL-SIGNAL CHARACTERISTICS
-
II
2N3634 thru 2N3637
ELECTRICAL CHARACTERISTICS (continued) (TA = 25·C unless otherwise noted)
Characteristic
Symbol
Max
Unit
Output Capacitance
(VCB = 20 Vdc, IE = 0, I = 100 kHz)
Cobo
-
10
pF
Input Capacitance
(VBE = 1.0 Vdc, IC = 0, I = 100 kHz)
Cibo
-
75
pF
Input Impedance
(lC = 10 mAde, VCE = 10 Vdc, 1= 1.0 kHz)
ohms
hie
2N3634, 2N3636
2N3635, 2N3637
100
200
h re
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vdc, 1= 1.0 kHz)
•
Min
Small-Signal Current Gain
(lC = 10 mAde, VCE = 10 Vdc, 1= 1.0 kHz)
600
1200
-
3.0
40
80
160
320
X 10-4
-
hie
2N3634, 2N3636
2N3635, 2N3637
Output Admittance
(Ie = 10 mAde, VCE = 10 Vdc, I = 1.0 kHz)
hoe
-
200
I'mhos
Noise Figure
(Ie = 0.5 mAde, VCE = 10 Vdc, RS = 1.0 k ohms, f = 1.0 kHz)
NF
-
3.0
dB
SWITCHING CHARACTERISTICS
Turn-On Time
(Vec = 100 Vdc, VBE = 4.0 Vdc,
Ie = 50 mAde, IBI = IB2 = 5.0 mAde)
Turn-Off Time
(1) Pulse Test: Pulse Width .. 300 !'S, Duty eycle .. 2.0%.
FIGURE 1 -
JUNCTION CAPACITANCE VARIATIONS
FIGURE 2 -
100
GAIN·BANDWIDTH PRODUCT
500
y~= loy
o~
TJ = 25·C
0
....... 1'-.
r-
C;b
j
300
I
200
=
Ei
........
I
"Cob
/
100
..i
0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
,,/
L
./
50
1.0
50 70 100
....-
1/
70
7
5
0.1
~
2.0
3.0
5.0 7.0
REVERSE BIAS (VOlTS)
10
20
30
50
70 100
I.. EMlnER CURRENT (mA)
FIGURE 3 -
CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
300
2N3634
YCE
200
= 2.0Y
TJ = 125·C
0
-..
TJ - 25.,
TJ
........
..............
r-... t'" 1"0 .....
55·C
~ ::::1"-
20
10
1.0
~
~~
~
2.0
3.0
5.0
7.0
10
20
30
Ie, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-118
50
70
100
200
2N3634 thru 2N3637
300
2N3635
200
TJ
125°C
TJ
25°C
~
~ 100
IS
!I!!
1
TJ
70
YCE= 2.0Y
~
r": ~
55°C
1'-...'"- "
50
~~
30
~
20
I0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
200
100
Ic, COLLECTOR CURRENT (mAl
FIGURE 4 -
CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE
0
2N3634·2N3635
TJ
~
2S"C-
J
0
:--,
7
~
......
...........
5
r---... ........
3
NORMALIZED TO YCE
~
YCE -10Y~
""
I"
1"'-.
i"'r--
lOY Ic ~SO rnA
2
YCE ~ 2.0Y
r--..""- l'-,
YCE ~ \.0 Y..............
1
10
20
50
30
70
10
20
50
30
70
,
200
100
IC. COLLECTOR CURRENT (mAl
FIGURE 5 -
CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
300
2N3636
200
YCE = 2.0Y
TJ = 125°C
0
......
0
TJ
25°C
0
TJ
0
55°C
r....
""'""r--;
"~ :--.
f' l'-:" r.....
"10............
0
I0
\.0
2.0
30
5.0
7.0
10
20
30
Ic, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-119
50
70
100
~~
200
•
2N3634 thru 2N3637
lOO
TJ
~
,
125°C
200
..........
25°C
TJ
I
TJ .
0
2N3637
YCE~
~ r-....
55°C
......
......
"
....... r"o.
0
....... I'"
r--~
0
~~
0
•
2.0Y
~
10
1.0
l.O
2.0
7.0
5.0
10
lO
20
70
50
100
200
Ie. COLLECTOR CURRENT IrnAl
FIGURE 6 -
CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE
20
2N3636·2N3637
TJ~25·C-
10
........
07
........
........
'I..
05
'"
03
NORMALIZED TO Ve •.~ 10 V. Ie
~ 50
mA
Vc.~10~
........
.........
.........
.........
Ve•
~ 1.0 v-.........
02
" ""........
........
"'-,
Ve•
.......
20
30
70
50
10
20
50
30
70
100
Ie. COLLECTOR CURRENT (mAl
FIGURE 7 10
~
INPUT IMPEDANCE
FIGURE 8 -
\ 1\
OUTPUT IMPEDANCE
50
j
\.
I
\
0
1\
0
\
0
r\
2N3635, 2N363
V
\
0
1\
II
/
V
2N3635, 2N3637
\.
V
/'
....
1\
\
.0
0
0
2N3634, 2N3636\.
/
/
V
lN3634, 2N3636
'\.
.0
.7
01
200
70
\
7. 0
o.5
'" "
'I'.........
01
10
0
~ 2.0 ~
\.
02
03
05
07
1.0
2.0
3.0
50 7.0
l - f--
I-"
5.0
10
0.1
0.1
03
05
07
10
1.0
I., EMInER CURRENT ImAI
I., EMlnER CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-120
30
50 10
10
2N3634 thru 2N3637
FIGURE 9 -
FIGURE 10 -
CURRENT GAIN
50
200
I
I
150
~
-
,,\
30
2N3635, 2N3637
f\.
01\
'\
1\
.~
o
~
z
~
g
~
VOLTAGE FEEDBACK RATIO
20
1\
i
~ 70
100
j
:.---
,...-
~
1-1---
--
\
5.0
1,\
2N363~'"
2N3634,
20
70
~N3635,2N3637
1'\
~
~
0
50
01
02
03
05
07
10
20
30
50
70
o7
10
01
02
03
05
I" EMITTER CURRENT ImAI
_
PF~IO
FIGURE 12 -
I
V
+0. 5
VIE\:.!!-- ~i-"
0.6
~
z
i
aJ
5
II
0.4
----
-
2,0
50
70
3,0
5.0 7,0 10
20
30
10
TEMPERATURE COEFFICIENTS
-1.S
50 70 100
1.c
r-
Bve for VeEI ..t}
/" ~E{u'l
VeEI"'1
0.2
1.0
30
t.
~55'C}-
(25'C t. 125'C)
(25'C t. ~S5'C)
J
o
10
./
TJ~25'C
;
~
10
i'-
+1.0
0.8
;:!i
07
,
I,. EMITTER CURRENT {mAl
FIGURE 11 - SATURATION VOLTAGES
1.0
•
I\.
-;3634, 2N3636
200
-2.0
Ie, COLLECTOR CURRENT (mAl
V
o
Js.c
t. 12S'C}
~
100
50
150
200
Ie, COLLECTOR CURRENT (mAl
FIGURE 13- SWITCHING TIME TEST CIRCUIT
P,W, '" 20 p.s
DUTY CYCLE"; 2%
RISE TIME"; 20 ns
2.011<
~-lOOV
V;. ____
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-121
~
2N3634 thru 2N3637
FIGURE 14 -
TURN-ON TIME VARIATIONS WITH VOLTAGE
1000
I"
300
200
"
{J,=lO
~
I\.
I'
I,
3000
f-
i ~5tf- ~
I III rJ
N
2000
"
!
~,
!
2N3634-35
7
5
1.0
" 1'\
1'\
1'\
1\
700
..... fl'
1"-
>=
fl,= 10,\
20
~
'I..
I'\.
300
1',11
~f-
J'\.PF =20
200
1,@vo.=OV
0
Vee = lOOV
TJ = 25°C
I'\.
!;ij 500
""
0
'\
1000
"-
0
TURN-OFF TIME VARIATIONS WITH CIRCUIT GAIN"
'\
2N3636-37/
I'
0
-
Ti
Vee = 100V
Vee = 10V
~ 100
70
•
5000
CURVES APPLY TO ALL DEVICE TYPES
EXCEPT WHERE INOICATED
700
500
FIGURE 15 -
~
1"\
"If
100
~
70
2.0 3.0
5.0 7.0 10
20
30
SO 70 100
50
200
1.0
2.0
3.0
5.0 7.0 10
20
30
Ie. COLLECTOR CURRENT (mAl
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-122
50 70 100
200
2N3648
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
mAde
Collector Current -
Continuous
IC
500
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
400
2.28
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
2.0
11.43
Watts
mWrC
TJ, Tstg
-65 to +200
°C
Operating and Storage Junction
3 Collector
";~
3
1 Emttter
SWITCHING TRANSISTOR
NPN SILICON
Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(IC = 10 mAde, IB = 0)
V(BR)CEO
15
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 !tAdc, IE = 0)
V(BR)CBO
40
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
V(BR)EBO
6.0
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 10 Vde, VEB(off) = 1.0 Vde)
(VCE = 10 Vde, VEB(off) = 1.0 Vde, TA = 150°C)
ICEX
Base Cutoff Cu rrent
(VCE = 10 Vde, VOB = 1.0 Vdc)
IBL
-
!LAde
0.025
50
0.025
!LAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 150 mAde, VCE = 1.0 Vde)
(lc = 150 mAde, VCE = 1.0 Vde, TA ~ -55°C)
(lc = 500 mAde, VCE = 1.0 Vde)
-
hFE
15
25
30
12
12
Collector-Emitter Saturation Voltage(l)
(IC = 10 mAde, IB = 1.0 mAde)
(lC = 150 mAde, IB = 15 mAde)
(IC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
VBE(sat)
-
0.25
0.4
0.8
Vde
0.8
-
4-123
120
Vde
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
-
0.8
1.0
1.5
II
2N3648
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
1
1
Characteristic
Min
Symbol
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
•
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
100 kHz)
Input Impedance
(IC = 1.0 mA, VCE
=
10 V, f
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mA, VCE = 10 V, f
=
1.0 kHz)
Cabo
-
4.0
pF
Cibo
-
8.0
pF
hie
0.6
4.5
kohms
h re
-
25
X 10"4
4.5
20
150
10
100
!-,mhos
td
-
8.0
ns
tr
-
10
ns
ts
12
ns
8.0
ns
ton
-
16
ns
toff
-
18
ns
QT
-
300
pC
Small-Signal Current Gain
(lC = 15 mAdc, VCE = 10 Vdc, f = 100 MHz)
(lc = 1.0 mA, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(lC = 1.0 mA, VCE
hoe
=
=
10 V, f
-
-
1.0 kHz)
SWITCHING CHARACTERISTICS
(lC = 150 mA, IB1
VEB = 0.5 V, VCC
Delay Time
Rise Time
= 15 mA,
= 6.0 V)
(lC = 150 mA, IB1 = -IB2
15 mA, VCC = 6.0 V)
Storage Time
Fall Time
Turn-On Time
(lC = 150 mA, IB1
VEB = 0.5 V, VCC
Turn-Off Time
(lC = 150 mA, IB1
15 mA, VCC = 6.0 V)
Total Control Charge
(lC = 150 mA, IB = 15 mA, VCC
=
tf
= 15 mA,
= 6.0 V)
= -IB2 =
= 6.0 V)
(1) Pulse Test: Pulse Width", 300 !-,s, Duty Cycle'" 2.0%.
STORAGE TIME VARIATION
LIMITS OF SATURATION VOLTAGE
10
1.6
~~
10
-
p,
~ p,=
i-"
-
-:..-
0
1--
10
;
!,'=l,-\tr.
II. = 1.2
10
~
08
I
~
0.6
,., i.-'
20 30
50 70 100
~
......
_r'-'
MIN
VBElu1\
I
I
04
111111 Vee· 6V
L
MAX VBEI ... I
,;-
--TJ=25°C
--TJ=125°C
vII
5 7 10
t-- J!,~lol
TJ ~ 1S'C
1.1
~
~
/"
3
I II
I I II
z
5>
V
1
1.4
MAX VCElsatl
V
01
100 300 500
10
Ie. COLLECTO~ CURRENT ImAI
1030
507.010
10 30
5070100
Ie. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-124
100300 500
2N3648
MINIMUM CURRENT GAIN CHARACTERISTICS
50
30
..
~
~
i
10
~
~
'"
:i
Z
--- -~
......-
....f.-
10
f-
~
I
-r.:i= - -
...
~
I
~
~ f-
- - :,±
----- V I-'"
1,
-- _
~
~ f-
~,
Vc,,~
~
IV-
'\
-
.......
-
-.........
f--
"'"""
'\..
\
'"
""-
'"
"'- '\.
"", 1\
\.
'\.
\
1\
10
20
30
50
70
Ie. COllECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-125
100
100
300
500
•
2N3700
For Specifications, See 2N3019 Data.
2N3724
2N3725
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
•
Symbol
2N3724
2N3725
Unit
Collector-Emitter Voltage
VCEO
30
50
Vdc
Collector-Base Voltage
VCBO
50
80
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
500
mAde
Collector Current -
Continuous
li1
3
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
PD
1.0
5.71
Watts
mWI'C
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
5.0
28.6
Watts
mWI'C
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
~~""~'
~I[
1 Emitter
SWITCHING TRANSISTOR
NPN SILICON
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
2N3725
2N3724
Collector-Emitter Breakdown Voltage
(lC = 10 pAdc, VBE = 0)
2N3725
2N3724
ICBO
2N3725
2N3724
2N3725
2N3724
100°C)
100°C)
50 V, VEB
80 V, VEB
-
-
-
-
-
ICES
IB
= 0)
= 0)
Vdc
-
Vdc
Vde
6.0
-
Vde
!lAde
-
0.12
0.12
-
0.15
0.15
-
2N3725
2N3724
Base Current
=
=
80
50
80
50
V(BR)EBO
Collector Cutoff Current
(VCE = 80 Vde, VEB = 0)
(VCE = 50 Vde, VEB = 0)
(VCE
(VCE
-
V(BR)CBO
2N3725
2N3724
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
=
=
-
V(BR)CES
Collector-Base Breakdown Voltage
(lc = 10 pAde, IE = 0)
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0, TA
(VCB = 60 Vde, IE = 0, TA
50
30
-
1.7
1.7
120
120
!lAde
-
-
30
60
30
40
35
20
25
30
20
25
-
10
10
10
pAde
2N3724
2N3725
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 10 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vdc)
(lc = 100 mAde, VCE = 1.0 Vdc, TA
(lc = 300 mAde, VCE = 1.0 Vdc)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde, TA
(lc = 800 mAde, VCE = 2.0 Vde)
(lc = 1.0 Adc, VCE = 5.0 Vde)
(lc = 800 mA, VCE = 2.0 V)
(lc = 1.0 Adc, VCE = 5.0 V)
hFE
=
=
-55°C)
-55°C)
2N3725
2N3725
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-126
-
-
150
-
-
-
-
-
-
-
-
-
2N3724,2N3725
ELECTRICAL CHARACTERISTICS (continued) (TA - 25"C unless otherwise noted)
Characteristic
Symbol
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC
= 300
= 30
mAde)
2N3725
2N3724
(lC
= 500 mAde, IB = 50
mAde)
2N3725
2N3724
= 800 mAde, IB = 80
(lC
=
1.0 mAde, IB
=
0.17
0.17
0.25
0.25
0.19
0.19
0.26
0.20
0.25
0.25
0.40
0.32
0.30
0.30
0.52
0.42
0.43
0.43
0.80
0.65
0.55
0.55
0.95
0.75
2N3725
2N3724
10 mAde)
(lc
Max
-
2N3725
2N3724
=
mAde, IB
=
Typ
VCE(sat)
(lC
100 mAde, IB
Min
mAde)
2N3725
2N3724
100 mAde)
2N3725
2N3724
-
-
Base-Emitter Saturation Voltage
(lC = 10 mAde, 18 = 1.0 mAde)
(lc = 100 mAde, IS = 10 mAde)
(lC = 300 mAde, 18 = 30 mAde)
(lc = 500 mAde, IB = 50 mAde)
(lC = 800 mAde, IS = 80 mAde)
(lC = 1.0 Ade, 18 = 100 mAde)
VBE(sat)
-
Vdc
-
Vde
-
0.76
0.86
1.1
1.1
1.5
1.7
300
-
-
-
-
10
12
-
-
55
O.B
-
Unit
SMALL SIGNAL CHARACTERISTICS
f,-
Current-Gain - Sandwidth Product(2)
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Input Capacitance
(VES = 0.5 Vdc, IC
= 0, f =
Cobo
2N3725
2N3724
Cibo
1.0 MHz)
MHz
pF
pF
(1) Pulse Test: Pulse Width", 300 1-£8, Duty Cycle = 1.0%.
(2) f,- = I hfe I • ftest·
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vde, VBE(off) = 3.B Vdc,
IC = 500 mAde, 'Bl = 50 mAde)
(Figures B, 10)
Turn-On Time
Storage Time
= 30 Vde, IC = 500 mAde,
= 182 = 50 mAde)
(VCC
Fall Time
Turn-Off Time
'Bl
Id
-
5.0
10
ns
tr
-
15
30
ns
ton
-
20
35
ns
ts
-
35
50
ns
tf
-
20
25
n.
toff
-
50
60
ns
(Figures 9, 101
FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA
20
I
......
10
"'"
lOps
>- 05
i
-
'\J
de
....
03
0.2
........
~
o
~
TJ' 200 0 C
01
o
u
~
0.05
- - - Second Breakdown Limited
- - - - Thermal Limitation @ Te
~,pulse Ou,y Cycle ~ Til".
25°C
"
Applicable To Rated BVCEO
0.03
0.02
30
=
40
60
B.O
10
20
30
40
60
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS}
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-127
•
2N3724,2N3725
TYPICAL DC CHARACTERISTICS
FIGURE 3 - "ON" VOL TAGES
FIGURE 2 - DC CURRENT GAIN
400
14
-IJ
-
'"
0Z
•
i25 0C
=
200
z
;;:
'"'"
::>
'"
'"
'"c
f-
in
25 0C
r-
100
-
SO
60
~
........
40
10
:;
.....
0
2: 08
""
l---
w
'"
:;
« 0.6 F=VSE(sat)@ Ic/is = 10
--
f-- -550C
~TJ=250C
12
VCE" 1.0 V
"
r-...
0
>
>' 0.4
I'...
....... ~
0.2
-VCE(sa,1 @IClls - 10
20
10
50
20
100
500
200
10
1000
~0
'"<
O.S
~
'"
:;
>
FIGURE 5 - TEMPERATURE COEFFICIENTS
\
~
~
<>
;\
\
0.4
...
"
!'--
I\.
.........
0.2
II
1.0
2.0
5.0
10
1000 mA
I I
~
+0.5 . -'OVC FOR VCE(sat)
'"~
500mA
~
100
~
200
-~
-0.5
.....-
-
"-~
'" -1.5 -OVBFORVSE
'"0-
I II
50
:,...
+1.0
: -1.0
~
300mA
20
'APPLIES FOR IClls < hFE/2
"'~
8
SrOmA
r-..
-
Ic=100mA
0
0.5
\
+2.0
.s +1.5
,\
0.6
'"ul
>
~
TJ=25 0C
....
'"0
....
1000
+2.5
0
:!l
0-
500
200
IC. COLLECTOR CURRENT (mAl
FIGURE 4 - COLLECTOR SATURATION REGION
1.0
100
50
20
IC. COLLECTOR CURRENT (mAl
-2.0
-2.5
500
20
10
30
lB. BASE CURRENT (mAl
100
50
200
300
500
1000
IC. COLLECTOR CURRENT (mAl
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 6 - CURRENT·GAIN - BANDWIDTH PRODUCT
~ 500
~
I-
t;
::>
~ 300
100
70
VCE = 10 Vdc
!=100MHz
TJ = 250C
"-
0
V
.i,
0
;;: 100
<;>
r- I-
Cob
7. 0
0-
~
I'---
0
"-
~
;li
"":ib
............
/
~ 200
TJ - 25 0C
0
.........
:I:
z
FIGURE 7 - CAPACITANCE
5. 0
70
B
.t'
50
4.0
3. 0
6.0
10
20
40
60
100
200
0.1
400
IC. COLLECTOR CURRENT (mAl
0.2
0.5
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-128
20
50
100
2N3724,2N3725
FIGURE B - TURN-ON TIME
100
100
FIGURE 9 - TURN-OFF TIME
100
lellB = 10
TJ = 15 0 e
~
100
~
VC~ = Jo ~d~
Tr
tf@leIIB= 10
I lellB = 10
15 0 e
50
g
30
w
10
,.
~ 50
w
~
10
>=
.,;;J
C
30
td @VBE(offl 0 v
VBE(olf) = 3.B Vdc
Vee = 30 Vdc
3_0
.......
10
10
10
10
30
50
100
200
300
500
",
......
-/
.......
/'
VV
0
~
~
10
1000
........
/'
10
50
ts@lc/IB -10
-, IclIB = 10
""
::;;
I'.
f=
70
t,@Vee=10Vdc
Vee = 30 Vdc
r-...
10
30
100
50
IC. COLLECTOR CURRENT (mAl
100
300
500
1000
IC. COLLECTOR CURRENT (mAl
FIGURE' 11 - COLLECTOR CUTOFF CURRENT
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
1000
+30V
<
ffi
1.01"F
~
-3.BV
43
JL
Vin = 9.7 V
POW. = 1.0 1""
D.C_ '" 2%
T'O
62
1.0 k
AB
3I-
15
'"
'"~
""-
10
F =
....
"'-'
~
DY
0.1
~
100
I"F
30
10" ~
1.0
~
0
'-'
~
r-- _VCP60
:::
0
'"0
I-
.,;J V'"
100
'l""
0.01
o
ro
~
~
00
100
~D
UD
TJ. JUNCTION TEMPERATURE (OCI
=
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-129
~
100
200
•
MAXIMUM RATINGS
Unit
30
50
Vde
50
75
Vde
2N3734
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector Current -
Continuous
=
IC
5.0
Vde
1.5
Ade
TO-39
2N3734
2N3735
TO-46
2N3737
2N3734
2N3735
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
3 Collector
~()
25°C
Po
1.0
5.71
0.5
2.86
Watt
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
4.0
22.8
2.0
11.4
Watts
mWfC
2N3737
°c
CASE 26-03, STYLE 1
TO-46 (TO-206AD)
Total Device Dissipation @ TA
Derate above 25°C
•
2N3735
2N3737
Symbol
Rating
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
, Emitter
THERMAL CHARACTERISTICS
Symbol
Characteristic
2N3734
2N3735
2N3737
Unit
Thermal Resistance, Junction to Case
RruC
0.044
0.088
°C/mW
Thermal Resistance, Junction to Ambient
R8JA
0.175
0.35
°C/mW
GENERAL PURPOSE
TRANSISTOR
3
NPN SILICON
Refer to 2N3725 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
2N3734
2N3735, 2N3737
Collector-Base Breakdown Voltage
(lC = 10 !LAde, IE = 0)
ease Cutoff Current
(VCE = 25 Vde, VEe
(VCE = 40 Vde, VEe
5.0
-
V(BR)CBO
2N3734
2N3735, 2N3737
Emitter-Base ereakdown Voltage
(IE = 10 !LAde, IC = 0)
Collector Cutoff Current
(VCE = 25 Vde, VEe =
(VCE = 25 Vde, VEe =
(VCE = 40 Vde, VEe =
(VCE = 40 Vde, VEe =
50
75
-
30
50
V(BR)EeO
Vde)
Vde, TA
Vde)
Vde, TA
-
2N3734
=
-
0.20
20
0.20
20
-
0.3
0.3
-
2N3734
2N3735, 2N3737
35
40
35
30
20
120
80
2N3734
2N3735, 2N3737
30
20
-
-
0.2
0.3
0.5
0.9
-
O.B
-
1.0
1.2
1.4
100°C)
2N3735, 2N3737
=
100°C)
leL
= 2 Vde)
= 2 Vde)
2N3734
2N3735, 2N3737
Vde
Vde
!LAde
ICEX
2
2
2
2
Vde
!LAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE = 1 Vde)
(IC = 150 mAde, VCE = 1 Vde)
(lC = 500 mAde, VCE = 1 Vde)
(lC = 1 Ade, VCE = 1.5 Vde)
(lC
=
1.5 Ade, VCE
hFE
= 5 Vde)
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAde, Ie = 1 mAde)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1 Ade, Ie = 100 mAde)
VCE(sat)
ease-Emitter Saturation Voltage( 1)
(lC = 10 mAde, Ie = 1 mAde)
(lC = 150 mAde, Ie = 15 mAde)
(lC = 500 mAde, Ie = 50 mAde)
(lC = 1 Ade, Ie = 100 mAde)
veE (sat)
-
0.9
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-130
-
-
Vde
Vde
2N3737
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc. IE
= O. I =
100 kHz)
Input Capacitance
(VBE = 0.5 Vdc. IC
= O. I =
100 kHz)
Small-Signal Current Gain
(lC = 50 mAde. VCE = 10 Vdc. f
=
Cobo
-
9.0
pF
Cibo
-
80
pF
hie
2.5
-
-
ton
-
40
n.
toff
-
60
n.
07
-
10
NC
100 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30
v. VBE(off) = 2.0 V. IC = 1.0 Amp. IB1 = 100 mAl
Turn-Off Time
(VCC = 30
VBE(off)
v.
= 2.0 V.
IC
Total Control Charge
(lc = 1 Amp. IB = 100 mAo VCC
=
1.0 Amp. IB1
=
100 mAl
= 30 V)
(1) Pulse Test: Pulse Width", 300 ,..s. Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-131
•
2N3743
JAN, JTX AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
la' ";~""".'
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
300
Vde
Collector-Base Voltage
VCBO
300
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
1.0
5.7
Watts
mWf'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
5.0
28.6
Watts
mW/'C
TJ. Tstg
-65 to +200
'c
Collector-Emitter Voltage
•
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
3~1[
1Emit er
AMPLIFIER TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
300
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
300
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
5.0
-
Vdc
-
0.3
30
-
0.1
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 200 Vde, IE = 0, TA = 100'C)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
pAde
pAde
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 100 pAdc, VCE = 10 Vdc)
(lc = 1.0 mAde, VCE = 10 Vdc)
(lC = 10 mAde, VCE = 10 Vdc)
(lC = 30 mAde, VCE = 10 Vdc)
(lC = 50 mAde, VCE = 20 Vdc)
hFE
20
25
25
25
25
Collector-Emitter Saturation Voltage(2)
(Ie = 10 mAde, IB = 1 mAde)
(Ie = 30 mAde, IB = 3 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(2)
(lC = 1.0 mAde, IB = 1 mAde)
(lC = 30 mAde, IB = 3 mAde)
VBE(sat)
-
-
250
Vde
-
5.0
8.0
-
1.0
1.2
Vde
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 20 Vde, IE = 0, I = 100 kHz)
Cobo
-
15
pF
Input Capacitance
(VEB = 1,0 Vde, IC = 0, 1= 100 kHz)
Cibo
-
400
pF
Input Impedance
(VCE = 10 V, IC = 10 mA, I = 1 kHz)
hie
-
1.0
kohms
Voltage Feedback Ratio
(VCE = 10 V, IC = 10 mA. I = 1 kHz)
h re
-
4.0
X 10-4
Small-Signal Current Gain
(VCE = 10 V, IC = 10 mA, I = 1 kHz)
hie
30
300
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-132
-
2N3743
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted.)
Characteristic
Current Gain - High Frequency
(lC = 10 mAdc, VCE = 20 Vdc, f
Output Admittance
(VCE = 10 V, Ic = lamA. I
=
=
Unit
Svmbol
Min
Max
'hie'
1.5
-
hoe
-
200
I'mho5
Re(hie)
-
40
ohms
20 MHz)
-
1 kHz)
Real Part 01 Input Impedance
(lC = 10 mAdc, VCE = 10 Vdc, I
=
5 MHz)
(1) PW '" 30 fLS, Duty Cycle'" 1.0%.
(2) PW '" 300 1'5, Duty Cycle'" 2.0%.
sao
70
I"-
300
......
200
~
I I
1/
1..1 1
I
j
T, - 25'C
Clio
1!i
8
IE
100
,
I
70
50
-
20
~
0.1
0.2
0.5
1.0
2.0
5.0
10
ii20
50
Ihr
20
15
7
100
.,;j
//
\.
\
VCf -IOV
~
\
\
I
V
10
1
20
50
CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
100
T,
70
Vef ='IOV
125'C
-...........
TJ
50
~ ~S'C
ti
ffi
~
1
30
If, EMInER CURRENT (rnA)
REVERSE BIAS MIlTS!
z
-
~
30
10
10
/'
V
TA = 25'C
..i
)....
I
Vef ~ 20V
50
'"
30
•
GAIN-BANOWIDTH PRODUCT
JUNCTION CAPACITANCE
30
g
TJ
sS'C
-
-I- r-
20
r--.
'\
~
10
1
1.2
1.5
10
Ie, COLLECTOR CURRENT (rnA)
12
15
'"
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-133
20
30
50
2N3743
CURRENT GAIN CHARACTERISTICS versus COLLECTOR·EMITTER VOLTAGE
70
z
~
I
TJ = 25°C _
-
50
30
"'-VeE =5V
'\
15
1
20
•
---~ ......
10V
VeE
r\
\
\
10
I
1.5
1.2
10
12
20
IS
50
30
Ie, COLLECTOR CURRENT (rnA)
COLLECTOR·EMITTER SATURATION VOLTAQE
BASE·EMITTER SATURATION VOLTAGE
/
lell, = 10
TJ = 25°C
~
0.72
~
j
I~II' ~ 101
~
/
~
~
/
0.68
!!\
/
./'"
~
/
~
./
0.64
15
!::
,/
,/
i!i
i""
~
,..-
",.
TJ = 25°C
1
,/
D.60
/'
V
~
V
~
/'
,:
0.56
10
20
30
50
I
20
10
Ie. COlLECTOR CURRENT (rnA)
30
50
Ie, COLLECTOR CURRENT (rnA)
SMALL SIGNAL Y PARAMETERS
T.
_I
1m (y;.)
5 MHz
10
~
i-"
"
.:!fzl
~
Re(y;.y
~
g
'"~
~.f
>0-
2.0
1.0
0.7
0.5
r--
1/
-
I
g
5.0
~
2.0
Vl kHz
Ve\ = 10~de I
0.2
10
fi.l
!
0.1
0.2
1.0
0.5
0.5
-
I kHz R. (y,,)
0.1 t--- r-
vr
0.1
1.0
2.0
5.0
10
Re(y,,)
VeE = 10Yde
0.2 f---
,;
J
50
ffi
>-
/I
5MBz
100
20
~
Rely;,)
r
1m (y,.)
200
,..
'"
~
,....,....-
I
500
~
7.0
5.0
REVERSE TRANSFER ADMITTANCE
1000
I--r-
,I I.
20
I.5
= 25°C
INPUT ADMITTANCE
50
.05
0.1
0.2
1m I(y,,) 1
I
0.5
1.0
2.0
IE, EMInER CURRENT (rnA)
IL EMInER CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-134
5.0
10
2N3743
FORWARD TRANSFER ADMITTANCE
i.s
1000
500
500
~ 100
Q
I..
>.
lkH¥ ~~
Rely..)
;;;
~
~
I
l\...
5 MHz f- Imly..)
200
200
~
""e;
OUTPUT ADMITTANCE
1000
)--
50
VeE
i
~
5 MHz
10Vd
20
~
10
~V
il
~
50
~
20
~
10
;;;
/
/'
V
V
V
100
~
I.Y
VeE ~ 10Vdc
~
<:>
~
Imly,.)
Rely,,)
10I--
./
V.
V ...... ......
2
0.1
0.2
1.0
2.0
5.0
0.5
0.1
10
0.2
0.5
1.0
2.0
I.. EMITTER CURRENT ImA)
I.. EMITTER CURRENT ImA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-135
•
1/
.-- ~lkHz
1-1-
./
0.5
......
5~z . /
5.0
10
MAXIMUM RATINGS
Symbol
2N3762
2N3764
2N3763
2N3765
Unit
Collector-Emitter Voltage
VCEO
40
60
Vde
Collector-Base Voltage
VCBO
40
60
Vde
Emitter-Base Voltage
VEBO
Rating
Collector Current -
•
Continuous
IC
5.0
Vde
1.5
Ade
TO-39
2N3762
2N3763
TO-46
2N3764
2N3765
Total Device Dissipation @ TA
Derate above 25"C
=
25"C
PD
1.0
5.71
0.5
2.86
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25'C
=
25"C
PD
4.0
22.8
2.0
11.4
Watts
mWrC
Operating and Storage Junction
Temperature Range
Lead Temperature
1/16' from Case for 10 Seconds
TJ, Tstg
-65 to + 200
·C
TL
+235
·C
THERMAL CHARACTERISTICS
2N3762
2N3763
JAN. JTX. JTXV
AVAILABLE
CASE 79-02. STYLE 1
::~;~~D~.~'~'
2N3765
1 Emitter
CASE 26-03. STYLE 1
TO-46 (TO-206AB)
SWITCHING TRANSISTOR
2N3764
2N3765
Unit
Symbol
2N3762
2N3763
Thermal Resistance, Junction to Case
Rruc
44
88
'CIW
Thermal Resistance, Junction to Ambient
RruA
175
350
'CIW
Characteristic
3
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lc = 10 mAde, IB = 0)
V(BR)CEO
2N3762, 2N3764
2N3763, 2N3765
Collector-Base Breakdown Voltage
(lC· = 10 !lAde, IE = 0)
V(BR)CBO
2N3762, 2N3764
2N3763, 2N3765
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current
(VCE = 20 Vde, VEB =
(VCE = 20 Vde, VEB =
(VCE = 30 Vde, VEB =
(VCE = 30 Vde, VEB =
2.0
2.0
2.0
2.0
Base Cutoff Current
(VCE = 20 Vdc, VEB
(VCE = 30 Vdc, VEB
2.0 Vdc)
2.0 Vdc)
=
=
40
60
40
60
V(BR)EBO
ICEX
Vde)
Vde, TA
Vde)
Vde, TA
2N3762, 2N3764
=
100"C)
=
100"C)
5.0
-
2N3763, 2N3765
-
-
Vde
Vde
!lAde
0.10
10
0.10
10
!
'::;
0
2:
0.8
~
'"
!:j
~
0.6
'"
~
~
~
0.4
0
u
~
0.2
l\
I
r"'-
1\
This graph shows the effect of base current on collector current. /30 leur·
rent gain at the edge of saturationl is the current gain of the transistor at I
volt, and /3F Iforced gain) is the ratio of lell" in a circuit. EXAMPLE: For type
2N3734, estimate a base current 11,,1 tOlllsure saturation at a temperature of
25°C and a collector of 500 mAo
.
Observe that at Ie = 500 mA an overdrive factor of at least 2.0 is required
to drive the transistor well into the saturation region. From Figure I, it is seen
that h'E @ 1 volt is typically 54 Iguaranteed limits from the Table of Char·
acteristics can be used for "worst-case" designl.
Ic
l\
lA _
f----
J
1\'I"-...
\\
500mi
. . . r-:::: r--
150mA
54
2 = 500 mA/l"
10mA
I
2
{lo!{IF, OVERDRIVE FACTOR
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-137
1,,= 18.5 mAtyp
2N3762,2N3763,2N3764,2N3765
TEMPERATURE COEFFICIENTS
"ON" VOLTAGES
1.2
1.0
!S
I II
r- I- TJ -
~
~
0.6
P
0.4
!i!
i.:
-
HL
-+-I-'"'r I I I
_ff"'"
10
30
20
50
100
200
lOO'CT~
I-- -
9vc FOR Veo(u'l
lJ
2V
+
......
-1.0
I- 0." FOR V..
-1.5
...-
i
e": 110 1
500
~
-2.0
II'
o
1000
100
-- -
200
300
"'
500
SWITCHING TIME EQUIVALENT TEST CIRCUITS
800
900 1000
-30V
< 500 1"
I, > II"
DUTY CYCLE";; 2%
SCOPE
loon
1,1_
I
I
SCOPE
loon
O-JVv\"_~
IN916
+4V
"OFF" CONDITION CHARACTERISTICS
TRANSCONDUCTANCE
.,
1000
10'
/
700 t-- J-- Veo = IOV
1/
500
I
I
f= Veo
I
/ / I I
400
30V
TJ = l75°C
102
I
300
I
200
I I
II I
il1
..9
700
I. < 10 ..
TRANSCONDUCTANCE
::j
55'CTO 25'C
600
10 < I,
o ---
LARGE SIGNAL CHARACTERISTICS
~
::;::::
TURN-OFF nME
PW-200ns
8
~~
I
400
RISE TIME";; 2 ..
DUTY"CYCLE ,.;; 2%
~
--
Ie. COLLECTOR CURRENT (mAl
-U.lV
~
as
,L
-55'C TO 25'C
lOO'C TO J5'C 25'C TO lOO'C
Ie. COLlECTOR CURRENT (mAl
TURN·ONnME
25'C TO lOO'C
-0.5
....... V
300
I I I
~
~
0.1
I I
+1.0
+0.5
V.. @Veo=IV
~
+1.5
p
~
8
0.2
•
II I
I I I I I
V"(u'I.le/l, = 10
25'C
0.8
~
I
100
10
I
1.0
-
~
70
..9
TJ = 175'
50
40
~
as
I
J
/
100°C
/
/
25'cl -
J
100'C
1 25'C
30
55°C
10-'
1-
REVERSE
FORWARD
r-
20
I
1/
If
10
0.2
0.4
I
0.6
10-'
0.8
1.0
1.2
0.2
V... BASE·EMITTER VOLTAGE (VOLTSI
0.1
0.1
0.2
0.3
V,& BASE·EMITTER VOLTAGE IVOLTSJ
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
4-138
0.4
0.5
2N3762,2N3763,2N3764,2N3765
INPUT ADMITTANCE
EFFECT OF BASE·EMITTER RESISTANCE
10
5.0
10l
f-- -
VCE ~ 10V
TJ
/
VII
3.0
/ I
/
1.0
~
;;,
.s
!
~
15g§
0.5
10
f-'
•
B
0.3
I
I
0.2
i--'-
~
VCE ~30V
102
I
/
2.0
TJ
~
I
H5°C
I
I
I
..Y
IpOO°C/
25°C
~ 1- 550C
0.1
V
1.0
,~.
0.05
I
0.03
0.02
om
I
I
II
I
0.2
10- 1
I
0.4
tTtJI',2S0C
I
10-'
0.6
1.0
0.8
I1J4
1.2
V... BASE-EMITTER VOLTAGE (VOlTSI
SWITCHING
-TJ= 25·C
CHARACTERISTICS
TURN·ON TIME
300
I\.
100
"
I~ ~
"\.
-- T J
101
= 150·C
~
y
VCC = 30V
Ic/l, = 10
~!\.
10
~
~
\.\
~
,~
I--- f- V.. =2V
~
;::
I,
~
'"
Vee =30V
"- ~=10V
t'-... !t"
i"'1>
I I
10
200
100
20 I--- '-- Id "V•• =O ....
10
I I
'\
"-
30
I I
300
Ic/l.~
"-
101
1()6
RISE AND FALL TIME
'\.
200
11)'
R... EXTERNAL BASE-EMITIER RESISTANCE (ohms)
~
i'..
50
100
"- r-....
200
50
30
~o\l[
20
"-
-
10
1000
20
30
50
100
I,
.........
I
200
Ic. COLLECTOR CURRENT (mAl
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4·139
'-::
.......
10
500
II
300
rr~'l
500
1000
2N3762,2N3763,2N3764,2N3765
FALL TIME
STORAGE TIME
300
f-
200
ro· ...
,-t--r-.,
~
'\
1-. ......
'-'-
1cI1.= 20
I',=t,-'>ilf
..... ,
Iell.-IO
100
'~
"
•
300
I~,=I-I~+
~
~
200
.'" r,
100
'\::I' '\[',
I
"1"-..
I
~,
""
r-
Vee = 10V
lell,=2O
.....
['0.. "
1'0
30
......
t-
::::.. ~
i""-
---
!"...,
20
10
10
20
10
30
50
100
200 300
500
10
1000
20
30
50
CHARGE DATA
20
CAPACITANCE
,.
=- TJ =+25'C
f=
r--
/
HjjJ
'T~ ~1~25't
70
~
I--
i""-
,
~,
V
/
30
~Ilr
r:-
~
!;l
~
;
/'
1--_
......
20
~
~
I/ V
r---.
,
<5
~/
Cobo
10
0.7
f--
-..... ,~C;b'
50
---- TJ= +150'C
/i
;
1000
11111
30VI
Icll, = 10
r--
500
100
I
I I Vee
300
200
100
....
Ie. COLLECTOR CURRENT ImAl
Ie. COUECTOR CURRENT ImAl
10
"......
"
Iell, = 10
20
I I
111=-112
-......
1/
./
/
7,0
a..
0,5
/
5.0
0,3
0,2
3.0
10
20
30
50
100
200
300
500
1000
0.1
0.2
0.5
1.0
2,0
5.0
REVERSE BIAS (VOLTSI
Ie. COllECTOR CURRENT. ImAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-140
10
20
50
2N3762,2N3763,2N3764,2N3765
ACTIVE REGION SAFE OPERATING AREAS
3.0
2.0
1.0
\
1\
\
\
""'"
I\.
'\.
'\.
i'-
"'.......
Ie
:E
:5
ffi
g§
=>
'"'~
~
.........
"' ...... r--.,
-"'"
0.5
0.3
.........
............
............... r--.,
0.2
1001"
.............
~'
...............
~
DC
...............
..............
0.1
""" -501"
-:--......
r-...
.........
.05
.03
~ The Safe
f----
r--
.02 f----
Operating Area Curves indicate Ie - VeE limits
below which the devices will not go into secondary braakdown. Astha safe operating areas shown are independent of
temperature and duty cycls, these curves can be used as long
as the thermal resistance (max rating table) is also taken into
consideration to insure operation below the maximum
r-- iuncliol
I
.01
10
........
2N3762
I
lemporalui'
....... .........
to-
r---.....
..!l
------r-----............
--
2N3764
I
-.,.
-2N3763
I
20
--
-..,...
2N3765 -
I
30
40
VeE, COLLECTOR EMmER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-141
50
60
II
2N3798
2N3799
MAXIMUM RATINGS
Value
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5_0
Vdc
IC
50
mAde
Rating
Collector Current -
•
Unit
Symbol
Collector-Emitter Voltage
Continuous
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
0.36
2.06
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
1.2
6.86
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
3
2
1 Emitter
1
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
0.15
°C/mW
Thermal Resistance, Junction to Ambient
ROJA
0.49
°C/mW
Characteristic
ELECTRICAL CHARACTERISTICS
// ":~PNP SILICON
(TA ~ 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
60
-
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 10 ILAdc, IE ~ 0)
V(BR)CBO
60
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 10 ILAdc, IC ~ 0)
V(BR)EBO
5.0
-
-
Vdc
-
-
0.Q1
10
-
-
20
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 50 Vdc, IE ,,; 0)
(VCB ~ 50 Vdc, IE ~ 0, TA ~ 150°C)
ICBO
Emitter Cutoff Current
(VBE ~ 4.0 Vdc, IC ~ 0)
lEBO
ILAdc
nAdc
ON CHARACTERISTICS
DC Current Gain(l)
(lC ~ 1.0 ILAdc, VCE
hFE
5.0 Vdc)
2N3799
75
-
-
(lc ~ 10 ILAdc, VCE ~ 5.0 Vdc)
2N3798
2N3799
100
225
-
-
2N3798
2N3799
150
300
-
-
(lc ~ 100 ILAdc, VCE ~ 5.0 Vdc, TA ~ - 55°C)
2N3798
2N3799
75
150
-
-
(lc ~ 500 ILAdc, VCE ~ 5.0 Vdc)
2N3798
2N3799
150
300
-
-
450
900
(lc ~ 1.0 mAde, VCE ~ 5.0 Vdc)
2N3798
2N3799
150
300
-
(lc ~ 10 mAde, VCE ~ 5.0 Vdc)
2N3798
2N3799
125
250
-
-
-
~
(lc ~ 100 ILAdc, VCE ~ 5.0 Vdc)
Collector-Emitter Saturation Voltage(l)
(lC ~ 100 ILAdc, IB ~ 10 ILAdc)
(lC ~ 1.0 mAde, IB ~ 100 ILAdc)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC ~ 100 ILAdc, IB ~ 10 ILAdc)
(lC ~ 1.0 mAde, IB ~ 100 ILAdc)
VBE(sat)
Base-Emitter On Voltage
(lC ~ 100 ILAdc, VCE = 5.0 Vdc)
VBE(on)
-
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-142
-
-
-
-
-
Vdc
0.2
0.25
Vdc
0.7
0.8
0.7
Vdc
2N3798, 2N3799
ELECTRICAL CHARACTERISTICS (continuedl (TA ~ 25'C unless otherwise noted. I
I
Characteristic
Symbol
Min
Typ
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product(21
(IC ~ 500 pAdc, VCE ~ 5.0 Vdc, I ~ 30 MHz)
(lc ~ 1.0 mAdc, VCE ~ 5.0 Vdc, I ~ 100 MHzl
Output Capacitance
(VCB ~ 5.0 Vde, IE
~
0, I
~
100 kHzl
Input Capacitance
(VBE ~ 0.5 Vdc, IC
~
0, I
~
100 kHzl
Input Impedance
(lc ~ 1.0 mAde, VCE
~
10 Vdc, I
~
1.0 kHz)
Voltage Feedback Ratio
(lC ~ 1.0 mAdc, VCE
~
10 Vdc, I
~
1.0 kHz)
Noise Figure
(lC ~ 100 pAdc, VCE
I ~ 100 Hz, B.W.
Cobo
-
Cibo
-
-
8.0
3.0
10
-
15
40
-
600
900
-
h re
~
10 Vdc, I
~
~
10 Vdc, RG
20 Hz
hie
2N3798
2N3799
150
300
500
4.0
pF
pF
X 10- 4
25
-
-
5.0
hoe
1.0 kHz I
-
k ohms
hie
2N3798
2N3799
Small-Signal Current Gain
(lc ~ 1.0 mAde, VCE ~ 10 VdC, I ~ 1.0 kHz)
Output Admittance
(lC ~ 1.0 mAdc, VCE
MHz
-
30
100
60
"mhos
NF
~
~
dB
3.0 k ohmsl,
-
4.0
2.5
7.0
4.0
2N3798
2N3799
-
-
1.5
0.8
3.0
1.5
2N3798
2N3799
-
1.0
0.8
2.5
1.5
2N3798
2N3799
-
2.5
1.5
3.5
2.5
2N3798
2N3799
-
Spot
I
~
1.0 kHz, B.W.
~
200 Hz
Noise
I
~
10 kHz, BW.
~
2.0 kHz
Broadband Noise-Bandwidth 10 Hz to 15.7 kHz
(11 Pulse Test: Pulse Width", 300 "s, Duty Cycle'" 2.0%.
(21 IT is delined as the Irequency at which 'hie' extrapolates to unity.
SPOT NOISE FIGURE
(VeE::: 10 Vdc, TA::: 25°C)
FIGURE 1 - SOURCE RESISTANCE EFFECTS, f
0
FIGURE 2 - SOURCE RESISTANCE EFFECTS, folD Hz
1.0 kHz
,
,
120
12.0
100
\
1%;'
,
~ 80
/
'"
~ 6.0
.........
2.0
1.0 mA
"
"',~
100
1/
/
1%;'
E
w
'"
~
u: 60
11
-+-
r----t
80
~
"' "
'" 40
~
H10k
10 k
Rs. SOURCE RESISTANCE (OHMSI
-
loo,.A
20
-
-'1o,.A
lOOk
-
lOrA
//100 "A
\
/I
'/
/10 "A
~
~
vpo
/
"
/
10k
10 k
Rs. SOURCE RESISTANCE (OHMSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-143
lOOk
•
2N3798,2N3799
FIGURE 3 - FREQUENCY EFFECTS
12.0
1111111
Rs SOURCE AESI:h!A~CE
. / Ie ; 100 I'A. Rs ; 30 kll
I
10.0
I
'"
1111
7'e.; 1~ I'!I-.~~. ~?O kll
... Ie ; 1.0 rnA. Rs ; 1 0 kll
.... Ie; 10 I'A. Rs; 10 kll
I\.
. / Ie ; 100 I'A. Rl
t
3 kll
-..L i./
~
4.0
2.0
•
~ t-,.
:--..
-
"""
r--c
1.0 k
10 k
I. FREOUENCY (Hz)
AGURE 4b - TYPICAL CURRENT
GAIN CHARACTERISTICS - 2N3799
FIGURE 4a - TYPICAL CURRENT
GAIN CHARACTERISTICS-2N3798
500
II
lOOk
,,1\
V~EI; JoiN
-1-1/
n
VCE; 5.0 Vde
400
800
II ITI
T~!'!J[
z
;;;:
~ 300
z
;;;:
~
g§
~ 200
T~lJ5joC
~
TA; -55°C
200
II lTTT
II III
nTITT
0.01
0.1
1.0
Ie. COLLECTOR CURRENT (mAde)
l6
T~LUc
~ 400
Tt-i4I
100
TU 1!5
~TI
g;
13
~AI-J~
::>
i-'
'" 600
5
II III
0.01
10
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-144
0.1
1.0
Ie. COLLECTOR CURRENT (mAde)
10
2N3946
2N3947
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
200
mAde
Total Device Dissipation (ii TA = 25"C
Derate above 25"C
Po
0.36
2.06
Watt
mWf'C
Total Device Dissipation @ TC = 25°C
Po
1.2
6.9
Watts
mWf'C
TJ, Tstg
-65 to +200
"C
Collector Current -
Continuous
Derate above 25"C
Operating and Storage Junction
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3 Collector
"~.~
1 Emitter
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
0.15
"C/mW
Thermal Resistance, Junction to Ambient
ROJA
0.49
"C/mW
Characteristic
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage( 1)
(lC = 10 mAde)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 ~de, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 ~de, IC = 0)
V(BR)EBO
6.0
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 40 Vde, VOB = 3.0 Vde)
(VCE = 40 Vde, VOB = 3.0 Vde, TA
Base Cutoff Current
(VCE = 40 Vde, VOB
ICEX
=
150"C)
IBL
= 3.0 Vde)
!LAde
-
-
0.010
15
.025
!LAde
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 0.1 mAde, VCE
hFE
=
1.0 Vde)
2N3946
2N3947
30
60
-
1.0 mAde, VCE
=
1.0 Vde)
2N3946
2N3947
45
90
-
10 mAde, VCE
50
100
150
300
20
40
-
-
0.2
0.3
0.6
0.9
1.0
(lc
=
(lC
=
=
1.0 Vde)
2N3946
2N3947
(lC
= 50 mAde, VCE =
1.0 Vde)
2N3946
2N3947
Collector-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(IC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
Vde
Vde
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
=
0, f
=
2N3946
2N3947
tr
Cobo
100 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-145
250
300
-
-
MHz
-
4.0
pF
II
2N3946, 2N3947
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25°C unless otherwise noted)
Characteristic
•
Input Capacitance
(VBE ~ 1.0 Vdc, IC
~
0, I
Input Impedance
(lc ~ 1.0 rnA, VCE
~
10 V, I
~
1.0 kHz)
2N3946
2N3947
Voltage Feedback Ratio
(lC ~ 1.0 mA, VCE ~ 10 V, I
~
1.0 kHz)
2N3946
2N3947
~
Min
Max
Unit
Cibo
-
8.0
pF
0.5
2.0
6.0
12
-
-
10
20
50
100
250
700
1.0
5.0
30
50
rb'C c
-
200
ps
NF
-
5.0
dB
td
-
35
ns
35
ns
300
375
ns
75
ns
100 kHz)
kohms
hie
X 10~4
h re
Small Signal Current Gain
(lc ~ 1.0 rnA, VCE ~ 10 V, I
~
1.0 kHz)
2N3946
2N3947
Output Admittance
(lC ~ 1.0 mA, VCE
~
1.0 kHz)
2N3946
2N3947
-
hie
flmhos
hoe
~
10 V, I
Collector Base Time Constant
(lC ~ 10 mA, VCE ~ 20 V, I
Noise Figure
(lc ~ 100 flA, VCE
Symbol
~
~
31.8 MHz)
~
5.0 V, Ra
~
1.0 kfl, I
10 Hz to 15.7 kHz)
SWITCHING CHARACTERISTICS
VCC ~ 3.0 Vdc, VOB ~ 0.5 Vdc,
IC ~ 10 mAdc, IBI ~ 1.0 mA
Delay Time
Rise Time
Storage Time
VCC
Fall Time
IBI
~
~
~
3.0 V, IC
IB2
~
-
tr
ts
2N3946
2N3947
10 mA,
1.0 mAdc
tl
(1) Pulse Test: PW '" 300 flS, Duty Cycle'" 2%.
TYPICAL SWITCHING CHARACTERISTICS
(TA= 25°C unless otherwise noted)
DELAY AND RISE TIME
RISE TIME
500
300
200
500
"
100
.5
!II
;:::
r-... ,......
"-
r--. '" '<
le/l.~IO
~
I,
Vee
VOl
30
20
co
""'l.
Id
2'Y'
15V f"-;;; r--
1m
1.0
2.0
3.0
5.0 7.0 10
Ie. COLLECTOR CURRENT ImAl
"
~
100
;:::
'"
70
~
50
~
21N394~
=
.1
......
Vee ~ IS Volts
"
le/l.~IO
"~
-TJ~25°C
~
.......
3D
2N3946 ~
--TJ =150°C
~
~
20
1'--.
I"-.,
20
~
200
~v
~
Vo.~OV
10
300
I
70
50
__
10
30
50
1.0
2.0
3.0
5.0 7.0 10
Ie. COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-146
--
f-
r--
ff-
l-
. ~N394r\.:
141 1"-
"":--t-:"
,~~
I r-
20
30
50
2N3946, 2N3947
STORAGE AND FALL TIMES
2N3946
2N3947
1000
-··Iell,
700
1000
10····150'C
20--ISO'C
le/l.
300
g
!
200
.... L1
~
"
f---
- --- , ..... -
. 1',, •
""'<..' ,
~-
100
- ...
bo
- t. .
-~
" .....,
~
70
~
SO
30
~
!
500
.,.--
300
...... ..."
200
''';:;
100
::::- ......
-,':':'~
.
~
..
'~
-
--
.
I
30
.....
to-
If
~
..
.
~
;..1,/· .........
......
'-': r......
50
20
~~
,~,:"
-......
10····150'C
lei I, - 20--150'C
-
70
- ---
-'~le!l, ~
- -- --
700
500 ~If
20
1.0
2.0
3.0
5.0
7.0
10
20
30
SO
10
20
Ie. COlLECTOR CURRENT !mAl
30
50
70
10
20
30
50
Ie. COLLECTOR CURRENT (mAl
TURN-ON TIME EQUIVALENT TEST CIRCUIT
DUTY CYCLE = 2%
+lo.6Url--- I---
TURN-OFF TIME EQUIVALENT TEST CIRCUIT
+3V
-I 3OOns
275
V-
0-O.SY-I
-.I
I
I
"C,<4 pF
_1_
t--..r-I"-
3.0
Cob
r-Il-r
200
,-
SO
.':;' !-""
~
~~
'.: '
l.o"
-
.
V
~
100
"'t--..
"
500
d
""
2.0
L
25°C
lSOoC
25"C
150°C
~
BOTH 1YP£S Vee=COY
l==o..S ~
.
Yee = Isy
.
.....
'.~F-
20
1.0
10
0.1
0.2
0.5
LO
2.0
5.0
10
REVERSE BIAS VOLTAGE IYIlt.TSl
20
LO
3.0
2.0
5.0
1.0
10
20
30
SO
Ie, COlLECTOR CURR£NTlmA)
COLLECTOR SATURATION REGION
10
~
08
~
0.6
Ic=3mA
Ic=lOmA
2N3946
le=SOmA
le=30mA
TJ =25°C
i
BS
!::
~
~.
,}!
'-
,
0.4
I
\
t'-o.
"
02
0.01
002
005
0.1
0.5
02
LO
I,. BASE CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-149
20
5.0
10
I
2N3946,2N3947
1.0
..,.
!
0.8
Ic =e3mA
t--
Ie =10 mA
30 mA
Ie
Ie
2N3947
50 mA
TJ
25'C
III
'"'~
!:;
f5
0.6
~
as
~
0.4
'\.
:::l
...
J!
""'-
"\.
8
........
0.2
•
001
002
0.05
01
02
1.0
05
20
50
10
I,. BASE CURRENT (mAl
"ON" VOLTAGES
1.0
0.9
~
~
-
"I
0.7
J.\
-
.--
f'-'-
-'
-
0.2
I--
.- ·-t-r-rrrIJ.lJ.,... ....
I I
0.1
0.2
0.5
1.0
2.0
~
~ -1.5
I
- -2.0
~
L....
L.,..~
'c. COllECTOR CURROO (mA)
10
/
1/
V
lJv,forV..,...,
2S'C TO 175"1:
V
-2.5
111111
5.0
----
-SS'C to 2S'C
~ -1.0
.1
" " " ,i,'
-0.5
is
V.. @VeE -IV
VCE,"'T' @Ie/l,- 10 • ~
III
0.1
~
."
rrTlllIl1
I I 1._11.1111.
SS'C to 2S'C
0.0
~~
10-' .....
2S'C to 17S'C
Dvc for VCE(...tl
u
..; ..,,-
10-.
V..,...,@'cll,- 10
i..-
-....
"': "
~
I
0.6
+0.5
I
··2N3946
-2N3947
0.8
GI
!:;
TEMPERATURE COEFFICIENTS
-3.0
20
50
20
10
30
Ie. COllECTOR CURROO (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-150
50
2N3962
thru
2N3965
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
2N3962
Symbol 2N3965
Unit
2N3964
2N3963
Collector-Emitter Voltage
VCEO
60
45
80
V
Collector-Base Voltage
VCBO
60
45
80
V
Emitter-Base Voltage
VEBO
6.0
V
IC
200
mA
0.36
2.06
mWrC
1.2
6.85
mWrC
-65 to +200
°c
Rating
Collector Current -
Continuous
@TA~25°C
Derate above 25°C
Watt
Po
Total Device Dissipation
@TC=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
•
Po
Total Device Dissipation
TJ, Tstg
Watts
AMPLIFIER TRANSISTOR
PNPSIUCON
Refer to 2N3798 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 5.0 rnA)
Vdc
V(BR)CEO
2N3962, 2N3965
2N3963
2N3964
Collector-Emitter Breakdown Voltage
(lC = 10 !LA)
60
80
45
V(BR)CES
2N3962, 2N3965
2N3963
2N3964
Collector-Base Breakdown Voltage
(lC ~ 10 !LA)
60
80
45
V(BR)CBO
2N3962, 2N3965
2N3963
2N3964
Emitter-Base Breakdown Voltage
(lC = 10 !LA)
60
80
45
V(BR)EBO
Collector Cutoff Current
(VCE = 50 V; 2N3964 = 40 V)
(VCE = 70 V)
2N3965, 2N3962
2N3963
Collector Cutoff Current
(VCE = 50 V)
(VCE = 70 V)
(VCE = 40 V)
(VCE = 50 V)
2N3962
2N3963
2N3964
2N3965
6.0
-
-
-
-
-
10
10
-
10
10
10
10
-
10
2N3962, 2N3963
2N3964, 2N3965
100
250
300
500
2N3962, 2N3963
2N3964, 2N3965
100
250
-
(lc = 1.0 rnA. VCE = 5.0)
2N3962, 2N3963
2N3964, 2N3965
100
250
450
600
(IC = 10 !LA, VCE = 5.0, TA = -55°C)
2N3962, 2N3963
2N3964, 2N3965
40
100
-
Emitter Cutoff Current
(VEB = 4.0 V)
lEBO
Vdc
Vdc
nAdc
ICBO
ICES
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 !LA, VCE = 5.0 V)
(lc = 100
!LA, VCE
hFE
= 5.0 V)
-
-
(continued)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-151
2N3962,2N3963,2N3964,2N3965
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
•
Min
Symbol
Characteristic
DC Current Gain(l) continued
(lC = 1.0 mA, VCE = 5.0 V, TA = 100'C)
-
2N3962, 2N3963
2N3964, 2N3965
-
Max
Unit
600
800
-
(lc = 1.0 pA, VCE = 5.0 V)
2N3962, 2N3963
2N3964, 2N3965
60
180
(lc = 10 mA, VCE = 5.0 V)
2N3962, 2N3963
2N3964, 2N3965
100
200
(lc = 50 mA, VCE = 5.0 V)
2N3962, 2N3963
2N3964, 2N3965
90
180
(lc = 50 mA, VCE = 5.0 V, TA = -55'C)
2N3962, 2N3963
2N3964, 2N3965
45
90
-
-
0.25
0.4
V
V
-
0.9
0.95
V
V
Collector-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.5 mAl.
(lC = 50 mA, IB = 5.0 mA)(1)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 rnA, IB = 0.5 mAi
(lC = 50 rnA, IB = 5.0 mA)(1)
VBE(sat)
,
-
-
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 V, 1 = 1.0 MHz)
Cobo
-
6.0
pF
Input Capacitance
(VEB = 0.5 V, 1 = 1.0 MHz)
Cibo
-
15
pF
2.5
6.0
17
20
-
10
100
250
550
700
-
2.0
2.5
8.0
8.0
-
5.0
5.0
40
50
Input Impedance
(IC = 1.0 mA, VCE = 5.0 V, 1 = 1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 rnA, VCE = 5.0,1= 1.0 kHz)
Small-Signal Current Gain
(lc = 1.0 mA, VCE = 5.0 V, 1= 1.0 kHz)
h re
hie
2N3962, 2N3963
2N3964, 2N3965
Magnitude 01 Forward Current Transfer Ratio, Common-Emitter
2N3962, 2N3963
(lC = 0.5 mA, VCE = 5.0 V, I = 20 MHz)
2N3964, 2N3965
Ihlel
Output Admittance
(lC = 1.0 rnA, VCE = 5.0, 1= 1.0 kHz)
hoe
Noise Figure
(lC = 20 mA, VCE = 5.0 V, BW = 15.7 kHz)
kll
hie
2N3962, 2N3963
2N3964, 2N3965
2N3962, 2N3963
2N3964, 2N3965
JLmhos
NF
2N3962, 2N3963
2N3964, 2N3965
(lc = 20 pA, VCE = 5.0 V, BW = 1.5 kHz,
I = 10 kHz, Rs = 10 kfi)
2N3962, 2N3963
2N3964, 2N3965
(lc = 20 pA, VCE = 5.0 V, BW = 150 Hz,
I = 1.0 kHz, RS = 10 kll)
dB
-
-
3
2
-
3
2
2N3962, 2N3963
2N3964, 2N3965
-
3
2
(lc = 20 pA, VCE = 5.0 V, BW = 15 Hz,
f = 100 Hz, Rs = 10 kll)
2N3962, 2N3963
2N3964, 2N3965
-
-
10
4
(lc = 20 pA, VCE = 5.0 V. BW = 2.0 Hz.
f = 10 Hz. RS = 10 kfi)
2N3964, 2N3965
-
8
(1) Pulse Test: PW", 300 ..... Duty Cycle'" 2%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-152
10-4
2N4013
2N4014
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
,/I ~~'''. '
MAXIMUM RATINGS
Symbol
2N4013
2N4014
Unit
Collector-Emitter Voltage
VCEO
30
50
Vde
Collector-Base Voltage
VCBO
50
80
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
1.0
2.0
Ade
Rating
Collector Current - Continuous
-Peak
2
1
1 Emitter
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Po
0.5
28.6
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25'C
Po
1.4
6.8
Watts
mWrC
SWITCHING TRANSISTOR
TJ, Tstg
-65 to +200
'c
NPNSILICON
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(IC = 10 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 10 pAde, VBE = 0)
V(BR)CEO
2N4014
2N4013
50
30
-
-
80
50
-
-
80
50
-
-
6.0
-
-
V(BR)CES
2N4014
2N4013
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
2N4014
2N4013
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0, TA = 100'C)
(VCB = 40 Vde, IE = 0, TA = 100'C)
2N4014
2N4013
2N4014
2N4013
Collector Cutoff Current
(VCE = 80 Vde, VEB = 0)
(VCE = 50 Vde, VEB = 0)
2N4014
2N4013
ICBO
ICES
-
-
Vde
-
Vde
Vde
Vde
pAde
0.12
0.12
-
1.7
1.7
120
120
0.15
0.15
10
10
-
pAde
ON CHARACTERISTICS(l)
DC Current Gain
(IC = 10 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde, TA = -55'C)
(lC = 300 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde, TA = -55'C)
(lC = 800 mAde, VCE = 2.0 Vde)
(lC = 1.0 Ade, VCE = 5.0 Vde)
hFE
2N4014
2N4013
30
60
30
40
35
20
20
25
2N4014
2N4013
25
30
-
-
-
-
150
-
-
-
-
-
(continued)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-153
•
2N4013,2N4014
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted)
Symbol
Characteristic
Collector-Emitter Saturation Voltage
(lc = 10mAde, 18 = 1.0 mAde)
•
(lC
=
(lC
= 300
=
= 500
mAde, 18
= 50
(lc
= 800
mAde, 18
=
(lc
=
2N4014
2N4013
1.0 Ade, 18
=
2N4014
2N4013
30 mAde)
(lc
-
2N4014
2N4013
100 mAde, 18 = 10 mAde)
mAde, 18
Min
VCE(sat)
mAde)
2N4014
2N4013
80 mAde)
2N4014
2N4013
-
-
-
2N4014
2N4013
100 mAde)
-
8ase-Emitter Saturation Voltage
(lc = 10 mAde, 18 = 1.0 mAde)
(lC = 100 mAde, 18 = 10 mAde)
(lc = 300 mAde, IB = 30 mAde)
(lc = SOO mAde, 18 = 50 mAde)
(lc = 800 mAde, 18 = 80 mAde)
(lc = 1.0 Ade, 18 = 100 mAde)
VBE(sat)
-
Typ
Max
0.17
0.17
0.25
0.25
0.19
0.19
0.26
0.20
0.25
0.25
0040
0.30
0.30
0.52
0.42
0.43
0.43
0.80
0.65
0.55
0.55
0.95
0.75
-
Vde
0.32
Vde
-
-
-
-
-
0.76
0.86
1.1
1.1
1.5
1.7
300
-
-
-
10
12
0.8
Unit
-
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - 8andwidth Product(2)
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VC8 = 10 Vde, IE
= 0, f =
Input Capacitance
(VE8 = 0.5 Vde, IC = 0, f
=
Cobo
pF
Cibo
-
-
td
-
tr
-
2N4014
2N4013
1.0 MHz)
-
MHz
55
pF
5.0
10
ns
15
30
ns
1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vde, V8E(off) = 3.8 Vde,
IC = 500 mAde, IBl = 50 mAde)
(Figures 8, 10)
(VCC = 30 Vde, IC = 500 mAde,
181 = 182 = 50 mAde)
(Figures 9, 10)
2N4014
2N4013
Turn-On Time
(VCC = 30 Vde, V8Eloff) = 3.8 Vde,
IC = 500 mAde, 181 = 50 mAde)
(Figures 8, 10)
Turn-Off Time
(VCC = 30 Vde, IC = 500 mAde,
181 = 182 = 50 mAde)
(Figures 9, 10)
(1) Pulse Test: Pulse W,dth
(2)
= Ihfel' ftest·
tr
=
300!'S, Duty Cycle
=
-
30
50
ns
tf
20
25
25
30
ns
ton
-
20
35
ns
toff
-
50
60
ns
ts
2N4014
2N4013
1.0%.
FIGURE 1 - ACTlVE·REGION SAFE OPERATING AREA
2000
~ 700
;: 500
,
ill
~300
::>
~ 200
::
-
i-=
~ 100 t::
i5
~
\
\I
100",k
1000
70
50
30
20
0.5 0.1
TJ' 200·C t-~c
BONDING WIRE L1MITEO
THERMALLY LIMITED
1.0ms
• de
3.0
5.0
1.0
\
"
,
PULSE DUTY CYCLE" 10%
'SECOND BREAKDOWN FOR de:
DO NOT OPERATE ABOVE THERMAL
LIMITATION FOR TIMES GREATER
THAN 1.0 SECONO
2.0
1\
\
'iJ
:E~~~~5:~J~:~~~:~~~~~EDI
1.0
10",
i\
10
1\
"- "I
2N4013
2N4014
20
30
50
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-154
2N4013, 2N4014
TYPICAL DC CHARACTERISTICS
FIGURE 2 - DC CURRENT GAIN
FIGURE 3 - "ON" VOLTAGES
400
14
i
200
z
-
«
'"
f-
~
"'
~
u
"
;
-
U;
25°C
r-- r--.. ......
100
SO
-
60
-TJ"250C
12
VCE" I 0 V
J " i25 0C
10
....
':;
'"~
OS
I--
w
'"«
0.6 FVBE(satl@IC/IB" 10
':;
> 04
_.-55 0C
'"
-I--
>
t-....
40
r-.
r-VCE(sa'I@lc/IS
10
20
10
20
50
100
200
500
10
1000
50
20
IC, COLLECTOR CURRENT (mAl
+25
':;
'"«
':;
'">
'"f-
"u
'APPLIES FOR ICIIS
0
05
II
1.0
2.0
-
~ -10
500 rnA
~
.....
-15 f--0VB FOR VSE
f-
~ -20
I II
50
V
~ -05
f-
300 rnA
501020
+05 r--'OVC FOR VCE(sa'l
S
w
I I
S~O rnA
~
'"
~
I
+20
..§. +15
OS
f-
~
£'
;;
TJ" 25°C
w
al
1000
500
200
FIGURE 5 - TEMPERATURE COEFFICIENTS
1.0
"~
w
100
IC, COLLECTOR CURRENT (mAl
FIGURE 4 - COLLECTOR SATURATION REGION
~
II
.... ,..-
0.2
-
I-""
-25
100
200
500
10
20
30
IS, BASE CURRENT (mAl
50
100
200
300
500
1000
IC, COLLECTOR CURRENT (mAl
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 7 - CAPACITANCE
FIGURE 6 - CURRENT·GAIN - BANDWIDTH PRODUCT
:::I:
500
"-t;
I-
g
~ 300
VCE' 10 Vdc
f" 100 MHz
TJ' 25°C
\; 200
~
---
.............
.......
I
Z
"'-"
30
z
20
«
f-
G
;t
~
~ 100
~
-
w
u
V
;;i
TJ
50
.,,/"
or
z
100
70
10
u'
70
25°C
I--.Cib
I"--
--
Cob
50
70
~
u
~
50
40
60
10
20
40
60
100
200
30
01
400
02
05
10
20
50
10
VR, REVERSE VOLTAGE (VOLTSI
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-155
20
50
100
2N4013,2N4014
FIGURE 8 - TURN·ON TIME
200
100
FIGURE 9 - TURN·OFF TIME
200
IC/IB" 10
TJ" 25 0 C
~
""
100
50
w
'">=
tr@VCC-l0Vdc
30
........
20
~ 50
w
VCC" 30 Vdc
......
~
10
•
70
......
Id@VBEloffl - 0 V V
~~~I~fjb "V~: Vdc
3.0
30
50
100
200
300
500
10
1000
"
20
30V
II
J
I I II
ICIIB -10
Ty2n I
Ii......
po.
.......
'" f""'.r-.,
30
50
IC. CO'LLECTOR CURRENT ImAI
100
200
~
300
1000
500
IC. COLLECTOR CURRENT ImAI
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
FIGURE 11 - COLLECTOR CUTOFF CURRENT
1000
+30 V
;;0
-3
15
t-
ffi
~
-
100
~
~
~
~
O.lI'F
Vin+ 9 . 7 V.I1.
I II
's@IC/IB - 20
ICIIB" 10
V I/'
~V
......
lL\
~
,/'
10
20
9C
30
20
10
V
'">=
I-"
20
50
Ifl@~CCI"
10
0
B
~
~
0
1
~
62
0
u
Ir.:;;1 Dns
PW :;;t 200 ns
Duty Cycle ,,2 0%
Generator Source Impedance = 50~!
Pulse Generator EH1421 Tlmmg Umt and 1121 Pulse Driller
Oscilloscope TektrOnix 661 Samplmg Scope
-
I-VCE=50V
30
10-0- ~
==f=
C:
.AY
1.0
A V
~
='"
~
U/
A
0.1
~
L1'
0.01
o
20
40
60
80
100
120
140
TJ. JUNCTION TEMPERATURE (OCI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-156
160
180
200
MAXIMUM RATINGS
Rating
Symbol
2N4026/28 2N4027129
2N4030132 2N4031133
Collector-Emitter Voltage(ll
VCEO
60
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
2N40262N4029
2N40302N4033
Vdc
60
80
Vdc
5.0
5.0
Vdc
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
IC
1.0
1.0
Adc
25'C
Po
.5
2.85
1.25
7.15
W
mWI"C
Total Device Dissipation @ TC ~ 25'C
Derate above 25'C
Po
2.0
11.4
7.0
40
W
mWI"C
Collector Current -
Continuous
Total Device Dissipation (a' TA
Derate above 25'C
~
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
Lead or Terminal Temperature(21
h
+300
'c
THERMAL CHARACTERISTICS
Symbol
TO-1B
TO-39
Unit
Thermal Resistance, Junction to Case
ROJC
40
20
'CIW
Thermal Resistance, Junction to Ambient
ROJA
280
140
'CIW
ELECTRICAL CHARACTERISTICS (TA
2N4030
thru
2N4033
'c
(11 Applicable 0 to 10 mA
(21 Measured at a distance not less than 1/16" from seated surface (or casel for 60 Sec.
Characteristic
2N4026
thru
2N4029
Unit
80
3 Collector
~.~
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
JAN, JTX, TXV
AVAILABLE IN
GENERAL PURPOSE
TRANSISTOR
1 Emitter
PNP SILICON
~ 25'C unless otherwise noted.1
Symbol
Characteristic
Min
Max
60
80
-
60
80
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ~ 10 mAl
V
V(BRICEO
2N4026,28,30,32
2N4027,29,31,33
Collector-Base Breakdown Voltage
(lc ~ 10 pAl
2N4026,28,30,32
2N4027,29,31 ,33
Emitter-Base Breakdown Voltage
(IE ~ 10 pAl
V(BRIEBO
Collector Cutoff Current
(VCB ~ 50 VI
(VCB ~ 60 VI
(VCB ~ 50 V, TA ~ 150'CI
(VCB ~ 60 V, TA ~ 150'CI
ICBO
2N4026,28,30,32
2N4027,29,31 ,33
2N4026,28,30,32
2N4027,29,31 ,33
Emitter Cutoff Current
(VEB ~ 5.0 VI
lEBO
-
V
V(BRICBO
5.0
-
V
nA
-
50
50
50
50
10
pA
pA
ON CHARACTERISTICS
DC Current Gain
(lc ~ 100 mA, VCE ~ 5.0 V, @ -55'CI
hFE
-
2N4026,27,30,31
2N4028,29,32,33
15
40
(lc ~ 100 pA, VCE ~ 5.0 VI
2N4026,27,30,31
2N4028,29,32,33
30
75
-
(lc ~ 100 mA, VCE ~ 5.0 VI
2N4026,27,30,31
2N4028,29,32,33
40
100
120
300
(lC ~ 500 mA. VCE ~ 5.0 VI
2N4026,27,30,31
2N4028,29,32.33
25
70
(lc ~ 1.0 A. VCE ~ 5.0 VI
2N4026.30
2N4027,31
2N4028,32
2N4029.33
15
10
40
25
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-157
-
-
-
•
2N4026 thru 2N4033
ELECTRICAL CHARACTERISTICS (TA = 2S"C unless otherwise noted.)
Min
Max
-
-
-
O.IS
O.SO
1.0
-
0.9
-
1.2
1.1
Cobo
-
20
pF
Cibo
-
110
pF
hie
1.0
4.0
-
ts
-
350
ns
ton
-
100
ns
tl
-
50
ns
Symbol
Characteristic
Collector-Emitter Saturation Voltage
(IC = ISO rnA, iB = IS rnA)
(lc = SOO rnA, IB = SO rnA)
(IC = 1.0 AlB = 100 rnA)
VCE(sat)
2N4026,28,30,32
Base-Emitter Saturation Voltage
(lC = 150 rnA IB = IS rnA)
VBE(sat)
Base-Emitter On Voltage
(lc = 1.0 A, VCE = 1.0 V)
(lc = 500 rnA VCE = 0.5 V)
VBE(on)
2N4026,28,30,32
Unit
V
V
V
SMALL-SIGNAL CHARACTERISTICS
•
Output Capacitance
(VCE
=
10 V, I
Input Capacitance
(VEB = 0.5 V, I
=
1.0 MHz)
=
1.0 MHz)
Small Signal Current Gain
(lC = 50 rnA VCE = 10 V, I
=
100 MHz)
SWITCHiNG CHARACTERISTICS
Storage Time
(lC = SOO rnA IBI
=
IB2
Turn-On Time
(lC = SOO rnA, IBI
=
SO rnA)
Fall Time
(lc = 500 rnA, IBI
=
IB2
= 50 rnA)
=
SO rnA)
(3) Pulse Width = 300 p,s, Duty Cycle 1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-158
2N4036
2N4037
MAXIMUM RATINGS
Symbol
2N4036
2N4037
Unit
Collector-Emitter Voltage
Rating
VCEO
65
40
Isus)(1)
Vde
Collector-Base Voltage
VCBO
90
60
Vde
Emitter-Base Voltage
VEBO
7.0
Base Current
Collector Current -
Continuous
7.0
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Vde
IB
0.5
Ade
IC
1.0
Ade
(jfj ";.~"~"
Po
Continuous Power Dissipation
at or Below TC = 25°C
5.0
28.6
linear Derating Factor
Operating and Storage Junction
Temperature Range
Lead Temperature
1/16" Irom Case lor 10 Seconds
1.0
5.72
Watts
3~1[
mWrC
TJ, Tstg
-65 to +200
°C
TL
230
°C
1 Emttte'
II
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
Thermal Resistance, Junction to Case
11) Must not be tested on a curve tracer.
ELECTRICAL CHARACTERISTICS ITA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lc = 100 mAde, IB = 0)
Vde
VCEOlsus)
2N4036
2N4037
Collector-Base Breakdown Voltage
(lC = 0.1 rnA de)
VIBR)CBO
65
40
-
60
-
2N4037
Collector Cutoff Current
(VCE = 85 V, VBE = 1.5 V)
(VCE = 30 V, VBE = 1.5 V, TC = 150°C)
ICEX
mAde
-
100
0.1
-
100
0.25
-
10.0
1.0
2N4036
2N4036
2N4037
20
20
15
200
(lc = 150 mAde, VCE = 10 V)
2N4036
2N4037
40
50
140
250
(lc = 500 mAdc, VCE = 10 V)
2N4036
20
-
2N4036
Collector Cutoff Current
IVCB = 90 V, IE = 0)
IVCB = 60 V, IE = 0)
2N4036
2N4037
Emitter Cutoff Current
IVBE = 7.0 Vde, IC = 0)
IVBE = 5.0 Vde, IC = 0)
2N4036
2N4037
ICBO
lEBO
Vde
pAde
pAde
ON CHARACTERISTICS
DC Current Gain
(lC = 150 mAde, VCE = 2.0 V)
(lc = 0.1 mAde, VCE = 10 V)
(lC = 1.0 mAdc, VCE = 10 V)
-
hFE
Collector-Emitter Saturation Voltage
(lc = 150 rnA. IB = 15 rnA)
-
-
V
VCElsat)
2N4036
2N4037
Base-Emitter Saturation Voltage
(lC = 150 rnA. IB = 15 rnA)
2N4036
Base-Emitter On Voltage
(lC = 150 rnA. VCE = 10 V)
2N4037
0.65
1.4
VBElsat)
1.4
V
VBElon)
1.5
V
30
pF
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
IVCB = 10 V, 1= 1.0 MHz)
Ccb
-
2N4037
Current Gain - High Frequency
(lc = 50 rnA, VCE = 10 V, I = 20 MHz)
-
ihlei
2N4036
2N4037
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-159
3.0
3.0
10.0
2N4036,2N4037
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
2N4036
tr
-
2N4036
Is
Max
Unit
SWITCHING CHARACTERISTICS
Rise Time
(lSI
Storage Time
Fall Time
=
15 mAl
(lS2
(lS2
=
=
15 mAl
15 mAl
Turn-On Time
(lSI
Turn-Off Time
(IBI
= IB2)
= IB2)
2N4036
tf
2N4036
ton
2N4036
toff
CURRENT GAIN CHARACTERISTICS
versus COLLECTOR-EMITTER VOLTAGE'
•
-
70
ns
600
n.
100
ns
110
ns
700
ns
DISSIPATION DERATING CURVE
0
(AfTAI
0
~
0
VCE -10 V
0
AMBIENT TEMPERATURE (TAl = 25°C
0
'\
0
~
1'\
0
0
0
]
1.0
10
IC. COLLECTOR CURRENT (mAl
i"-
0
-75
100
-25
0
50
100
150
200
CASE OR AMBIENT TEMPERATURE (TC OR TA) _oc
JURREN~
coulCTOR
(IC) =\10
BASE CURRENT (IB)
COLLECTOR·TO·BASE
VOLTAGE -40 V
-20 V
0
~
:='"
10"
~
AMBIENT TEMPERATURE (TA) = 25°C
/'
0
V
V
0
V
8 10-9
~
0
10·\0 0
25
50
75
100 125
150 175
TJ. JUNCTION TEMPERATURE (OC)
f\
t- t- t- t-- ~
TYPICAL SATURATION-VOLTAGE CHARACTERISTICS
TYPICAL COLLECTOR-CUTOFF CURRENT
versus JUNCTION TEMPERATURE
10.7
'\
(ATTCI
200
V
-0.35
-0.25
-015
-0.5
VCE(sat). COLLECTOR·TO·EMmER SATURATION VOLTAGE (V)
MAXIMUM SAFE OPERATING AREAS (SOA)
TYPICAL SMALL SIGNAL BETA CHARACTERISTICS
1.
COLLECTOR·TO·EMmER VOLTAGE
(VCE) = -10 V
FREUUENCY = 20 MHz
AMBIENT TEMPERATURE (TA) = 25°C
0
IC MAX.
I
(CONTINUOUS)
° r - r 5 0 "S
~1=100 "
1--f-300 liS
I - - 500 "S'
I - - r--1.O mS
DC OPERATION
I
PULSED OPERATION"
IIII
.
50~
:-......
I I I
'\
CASE TEMPERATURE (TC) = 25°C
1 (CURVES MUST BE DERATED LINEARLY
. WITH INCREASE OF TEMPERATURE)
0
j1
7.0~
,~
NORMALIZED
POWER
MULTIPLIER
3.0
II
2.0
III
1.0
0
r - VCEO MAX
I - - (2N4037)
0
.0
0
40 V
VCEO MAX - 65 V
(2N4036)
I IIIIIII
"FOR SINGlE I I I IIEII
-0.0 1 NONREPETITIVE PULSE
-100
-1.0
-10
VCE. COLLECTOR·TO·EMITIERVOLTAGE (V)
i-'
-1.0
-10
-100
-1000
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-160
IIII
IIII
2N4208
2N4209
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
3 Collector
Rating
Symbol
2N4208 2N4209
":.~
Unit
Collector-Emitter Voltage
VCEO
12
15
Vdc
Collector-Base Voltage
VCBO
12
15
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
200
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate a bove 25°C
=
25°C
Po
0.36
2.06
Watt
mWFC
Total Device Dissipation @ TC
Derate a bove 25°C
=
25°C
Po
1.2
6.S
Watts
mW/oC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
•
, Emitter
SWITCHING TRANSISTOR
PNP SILICON
Refar to MM4257 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
2N420S
2N420S
V(BR)CEO
12
15
2N420S
2N420S
V(BR)CES
12
15
2N420S
2N420S
V(BR)CBO
12
15
-
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage( 1)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
(lC
(lC
(lc
=
=
= 3.0 mAde, IB =
100 pAde, VBE
100 pAde, 'E
0)
= 0)
= 0)
(IE = 100 pAdc, IC = 0)
= 6.0 Vde, VBE = 0)
= S.O Vde, VBE = 0)
= 6.0 Vdc, VBE = 0, TA = 125°C)
= S.O Vde, VBE = 0, TA = 125°C)
= 6.0 Vde, VBE = 0)
= S.O Vde, VBE = 0)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cu rrent
(VCE
(VCE
(VCE
(VCE
(VCE
(VCE
-
-
Vde
nAde
V(BR)EBO
4.5
5.S
2N420S
2N420S
2N420S
2N420S
'CES
-
10
10
5.0
5.0
2N420S
2N420S
IB
-
-
-
-
-
1.0
1.0
Vde
Vde
Vde
pAde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE
=
hFE
0.5 Vde)
2N420S
2N420S
15
35
-
-
2N420S
2N420S
30
50
-
120
120
2N420S
2N420S
12
20
-
-
2N420S
2N420S
30
40
-
-
(lc
=
10 mAde, VCE
= 0.3 Vde)
(lc
=
10 mAde, VCE
= 0.3 Vdc, TA =
(lc
= 50
mAde, VCE
=
1.0 Vde)(l)
Collector-Emitter Saturation Voltage
(lC = 1.0 mAde, IB = 0.1 mAde)
(lc
=
(lC
= 50
10 mAde, 'B
mAde, 'B
-WC)
VCE(sat)
Vde
2N420S
2N420S
-
-
-
0.13
0.15
=
1.0 mAde)
2N420S
2N420S
-
-
0.15
O.lS
=
5.0 mAde)(l)
2N420S
2N4209
-
-
-
0.5
0.6
Base-Emitter Saturation Voltage
(lC = 1.0 mAde, IB = 0.1 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)(l)
VBE(sat)
0.75
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-161
-
-
Vde
0.7
0.S6
1.1
O.B
O.SO
1.5
2N4208,2N4209
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25'C unless otherwise noted.)
I
Characteristic
Min
Typ
Max
700
S50
1000
1100
-
Cobo
-
2.0
3.0
pF
Cibo
-
2.0
3.5
pF
ton
-
10
15
ns
5.0
10
ns
5.0
15
ns
12
16
15
20
ns
12
17
15
20
ns
6.0
S.O
10
10
ns
-
15
20
Symbol
Unit
SMALL·SIGNAL CHARACTERISTICS
Current·Gain - Bandwidth Product
(lC ~ 10 mAde, VCE ~ 10 vdc, I ~ 100 MHz)
Output Capacitance
(VCB ~ 5.0 Vdc, IE
~
0, I
~
140 kHz)
Input Capacitance
(VBE ~ 0.5 Vdc, IC
~
0, I
~
140 kHz)
MHz
IT
2N420S
2N4209
SWITCHING CHARACTERISTICS
Turn·On Time
II
Delay Time
(VCC ~ 1.5 Vde, VBE ~ 0,
IC ~ 10 mAde, IBl ~ 1.0 mAde)
td
2N420S
2N4209
toff
-
2N420S
2N4209
ts
-
2N420S
2N4209
tl
-
Rise Time
tr
Turn·Off Time
Storage Time
(VCC ~ 1.5 Vdc,
IC ~ 10 mAde,
IBl ~ IB2 ~ 1.0 mAde)
Fall Time
Storage Time
(lC = 10 mAde, IBl = 10 mAde, IB2 = 10 mAde)
ts
2N420S
2N4209
-
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(2) IT is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-162
ns
2N4234
2N4235
2N4236
MAXIMUM RATINGS
Rating
Symbol
2N4234
2N4235
2N4236
Unit
Collector-Emitter Voltage
VCEO
40
60
80
Vdc
Collector-Base Voltage
VCBO
40
60
80
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IB
0.2
Vdc
IC
1.0
3.0'
Adc
Base Current
Collector Current -
Continuous
Total Device Dissipation @ TA =
25°C
Derate above 25°C
PD
Total Device Dissipation @ T C =
25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Watt
mWFC
1.0
5.7
fij ~-@'-
Watts
mWFC
6.0
34
3
-65 to +200
°c
~I[
1 Emitter
GENERAL PURPOSE TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
VCEO(sus)
40
60
80
Max
Unit
OFF CHARACTERISTICS
2N4234
2N4235
2N4236
Collector-Emitter Sustaining Voltage(1)
(lc = 100 mAde, IB = 0)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, VBE =
(VCE = 60 Vdc, VBE =
(VCE = 80 Vdc, VBE =
(VCE = 30 Vdc, VBE =
(VCE = 40 Vde, VBE =
(VCE = 60 Vdc, VBE =
ICEO
2N4234
2N4235
2N4236
1.5 Vdc)
1.5 Vde)
1.5 Vde)
1.5 Vde, TC
1.5 Vdc, TC
1.5 Vde, TC
-
=
=
=
150°C)
150°C)
150°C)
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
ICBO
Emitter Cutoff Current
(VBE = 7 Vde, IC = 0)
1.0
1.0
1.0
0.1
0.1
0.1
1.0
1.0
1.0
mAde
-
lEBO
-
mAde
-
-
2N4234
2N4235
2N4236
Vdc
mAde
-
ICEX
-
-
0.1
0.1
0.1
0.5
mAde
ON CHARACTERISTICS
DC Current Gain(l)
(lc = 100 mAde, VCE = 1.0 Vde)
(lc = 250 mAde, VCE = 1.0 Vdc)
(lc = 500 mAde, VCE = 1.0 Vde)
(lC = 1.0 Ade, VCE = 1.0 Vdc)
-
hFE
40
30
20
10
150
-
Collector-Emitter Saturation Voltage(l)
(lc = 1.0 Adc, IB = 125 mAde)
VCE(sat)
-
0.6
Vde
Base-Emitter Saturation Voltage(l)
(lC = 1.0 Ade, IB = 100 mAde)
VBE(sat)
-
1.5
Vde
Base-Emitter On Voltage
(lC = 250 mAde, VCE = 1.0 Vdc)
VBE
-
1.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 100 mAde, VCE = 10 Vde, f
=
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-163
•
2N4234,2N4235,2N4236
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Cobo
-
100
pF
hfe
25
-
-
Output Capacitance
(Vca = 10 Vdc, IE = 0, f·= 100 kHz)
Small-Signal Current Gain
(lC = 50 mAde, VCE = 10 Vdc, f = 1.0 kHz)
(1) Pulse Test: PW "" 300 I'-s, Duty Cycle"" 2.0%.
"Indicates Data in addition to JEDEC Requirements.
FIGURE 1- POWER·TEMPERATURE DERATING CURVE
•
~
.............. ......
..............
.........Te
..........
I'...... .......
TA
o
o
so
2.0
_
1.0
~
0.7
;
O. 5
I
u
~
0.3
0.2
7S
--, ..
.........
r--.....
,
"-
"'i...
.. ~
5ms~
de
....
~ ~1CON~1;; BREAKDOWN LIMITATION
r- .... THERMAL LlMITATIONATTe = 25°C.
DISSIPATION IS
f - - f-.lBASE·EMITIER
PERCEPTIBLE ABOVE Ie = 1 AMP).
9· 1
200
....~
~ ~1p.S
"'
""
0.03
2.0
3.0
5.0
7.0
10
r--..
The Safe Operating Area Curves indio
cate Ie - VeE limits below which the device
will not enter secondary breakdown. Col·
lector load lines for specific circuits must
fall within the applicable Safe Area to
avoid causing a catastrophic failure. To
insure operation below the maximum TJ,
power·temperature derating must be
observed for both steady state and pulse
power conditions.
i'.
I'-..
30
20
I"-
""
LIMIT FOR:
2N4234
2N4235
I 214231-
0.07
0.0 S
1.0
175
FIGURE 2- ACTlVE·REGION SAFE OPERATING AREAS
. '.
3.0
b-...
ISO
125
100
TEMPERATURE 1°C)
Safe Area Curves are Indicated by Figure 2.
All limits are applicable and must be observed_
2S
i'......
so
70
100
VeE, COLLECTOR·EMITIER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-164
2N4234,2N4235,2N4236
LARGE SIGNAL CHARACTERISTICS
"OFF" REGION CHARACTERISTICS
FIGURE 3 - TRANSCONDUCTANCE
FIGURE 5 - TRANSCONDUCTANCE
1000
10
-
700
VeE=2V
5.0
/
500
300
~
i
~
:j
8
.9
I
200
I
I
I
/
L
I TJ = -SS.C
I
II
I
t---
TJ = +100·C
1.0
f- Ir-!
ffi
0.5
I
0.2
~
TJ = +2S·C
.9
I
I
o
I
II
TJ
+2S·C ~
0.6
0.4
0.8
V". BASE·EMITTER VOLTAGE IVOLTS}
1.0
0.01
0.2
1.2
FIGURE 4 -INPUT ADMITTANCE
I
0.1
0.1
0.2
0.3
0.4
V". BASE EMITTER VOLTAGE IVOLTSI
0.5
100
VeE
or---
VeE
70
2V
/11
/
/
/
I
10
~
I
50
......
II/
20
!i
0.6
FIGURE 6- EFFECTS OF BASE·EMITTER RESISTANCE
100
~
=
./
0.02
I
0.2
I
r- -iiSE-FOjWARr-
I
10
I
0.05
I
TJ = +17S·C
II
I
TJ = +IOO·C
/
0.1
L
20
J
I
I
TJ = +17S·C /
~
r-- .,f
I
30
II
II
2.0
70
50
40V
VeE
/
I
I
f-
I
'/
J
I
/
100
/
I
5.0
/ II
'/
I
TJ = +100·C
1.0
I TJ = -SS·C
I
o. I
I I- 4
II
1
-..,
1
~
TJ = +2S·C
I
I
.J
I
0.2
"""
"
"
j
r--....
..........
"
'"
le=10Xle~
r--.
I.....
0.8
0.4
0.6
V". BASE·EMITTER VOLTAGE (VOLTS)
1.0
1.2
3.0
1.0
25
"\.
"
I'\.
'\.
'\
50
100
125
75
TJ. JUNCTION TEMPERATURE I·C}
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-165
" "-
~
2.0
I
0.05
o
"" '"
t--...
.......
.......... le=2 xleES
le=le~
I
TJ = +17S·C
..........
I
o. 5
O.2
..........
...........
-...........
I
I
2.0
/
40V
.........
150
175
2N4234,2N4235,2N4236
FIGURE 7 - CURRENT GAIN
200
100
-F-L
TJ
~17~'C
ITJ
0
TJ
d
55'C
-""::""'111
.....
0
--.-~
r-. ~
"-
0
•
10
10
20
30
50
2Y
YeE
+I00'C
-- --
+25'C
100
Ie. COlLECTOR CURRENT ImAl
300
200
"'---"
....;;: ~
..... ~ ....
500
1000
SATURATION REGION CHARACTERISTICS
FIGURE 8 - COLLECTOR SATURATION REGION
2.0
~
~
1.8
\
TJ - +25'C
1. 6
~
~
~
1.
4
I.2
~
O. 8
~
O. 6
t;
~ 0.4
0.2
le-250mA
Ie -IOOmA
~ 1.0
\
\
\
\
\..
\.
o
1.0
2.0
3.0
5.0
7.0
10
20
I,. SASE CURRENT ImA)
30
TJ - +25'C
11111
.... ~+-~
YIEIH.} @ lelia = 10
.8
+1.
rJ"
o
P +0.51-
.... I:t:I:i:::==~
Y,,@VeE
~
2V
6
I...--i--'
~
0.02 0.03
200
0.2 0.3
0.05 0.07 0.1
Ie. COLLECTOR CURRENT lAMPS}
0.5 0.7 1.0
.r I
1+lIOO'C 10 +I75'C)
Itz50c 10 + lOO'C~
jefO,VL:::.1----l--
1 55'C 10 +25'C)
0
1-0.
LIM.}@operalinIlTJ=LIM.}@+25'C+IJv_loperalingTJ-25'C)
~
5 Use ,ppropri,lelJv fOf vollalle of inle,est.
~~-I.
O. 2
0
0.01
100
~
Use appropriate curve for temperature ranle of interest.
i
I
I
I
~
~
1-55'C 10 +I75}
~' fo, Viii::" I--
:vr-I
-2.
I
To compute saturation voHages ;
~ 0
a-I.
4
VCEI ..'} @ lelia = 10
70
50
FIGURE 10- TEMPERATURE COEFFICIENTS
FIGURE 9 - "ON" VOLTAGES
.0
Ie -looomA
Ie - 500mA
~
200
~
~
500
Ie. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-166
~
~
~
2N4234,2N4235,2N4236
DYNAMIC CHARACTERISTICS
FIGURE 13 - CAPACITANCE
FIGURE 11- TURN·ON TIME
3.0
~ee~60V
2.0
~
I-
-----
1'\
~ ~"
200
r-......
I"'
I'-
...
~
].
I'\.ee - 60 V, V•• - 2V
0.2
....
~
r--. ~to-
0
":-i"""-
1'\.
~
01--
"- 1\
t,
t"-r--.
~
r"'-r-.
C;b
i'.
0
"1\
O. 1
t- Vee
t'--r-.
C,.
I
:. 0.3
....
f'.
0.7
:0:
II
TJ ~ +2S'C
TJ ~ +l50'C
.
Vee~24V
"" 0.5
I
300
24 V, V•• ~ 0
0.07
1
20
30
~ .......
200 300
50 70 100
Ie, COLLECTOR CURRENT ImAl
30
0.1
500 700 1000
0.2
0.5
FIGURE 12 - STORAGE TIME
5.0
4.0
3.
~
.....
I...
Or--
2.0
,
'\ ,
3. 0
...
- .........,
.....""....
0
2.0
...
~ .? :-"'t< :7le/l.~20
le/l.~lb£ ~ ~~
",
""
7
\'
\'
I 10~
~
.:!-
:0:
;:::
\,
'\\
le/l.~
1. 0
",
20
\
~
.:f
0.2
~'-
O. 7
"'
O. 2
10
500 700 1000
'"
20
30
....
~I---
I....
r-....
-
r.....
50 70 100
200
Ie, COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-167
...
........
...
o. 3
50 70 100
200 300
Ie, COLLECTOR CURRENT ImAl
III
TJ ~ +25'C
TJ ~ +150'C
1\'
\
0.3
30
10
-----
le/l.~20
O. 5
20
r'\"
1.0
20
5.0
VR, REVERSE VOLTAGE IVOLTSI
O. 5
O. 1
10
~
II
\'
.IJlITJUJC I
- - - - TJ ~ +lSO'C
r-;;.;-
1',
FIGURE 14 - FAll TIME
5. 0
0
7. 0
•
I"
'"
........
0.05
10
"',
300
500 700 1000
MAXIMUM RATINGS
Symbol
2N4237
2N4238
2N4239
Unit
Collector-Emitter Voltage
Rating
VCEO
40
60
80
Vdc
Collector-Base Voltage
VCBO
50
80
100
Vdc
Emitter-Base Voltage
VEBO
6.0
IB
500
Vdc
IC
1.0
3.0'
Adc
1.0
5.3
Watt
mWrC
6.0
34
Watts
mWrC
-65 to +200
°c
Base Current
Collector Current -
•
Continuous
Total Device Dissipation
@TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
2N4237
2N4238
2N4239
Vdc
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Min
Max
40
60
80
-
-
2N4237
2N4238
-
0.1
0.1
(VCE = 100 Vde, VEB = 1.5 Vde)
(VCE = 30 Vde, VEB = 1.5 Vde, TC = 150°C)
2N4239
2N4237
-
0.1
1.0
(VCE = 50 Vde, VEB = 1.5 Vdc, TC = 150°C)
(VCE = 70 Vde, VEB = 1.5 Vdc, TC = 150°C)
2N4238
2N4239
-
-
1.0
1.0
-
0.1
.07
-
0.5
Symbol
Characteristic
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
(lc = 100 mAde, IB = 0)
Collector Cutoff Current
(VCE = 50 Vde, VEB = 1.5 Vde)
(VCE = 80 Vde, VEB = 1.5 Vde)
VCEO(sus)
2N4237
2N4238
2N4239
ICEX
Collector Cutoff Current
(VCB = Rated VCBO, IE = 0)
(VCE = Rated VCEO, IB = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)
lEBO
Vdc
mAde
mAde
mAde
ON CHARACTERISTICS
DC Current Gain(l)
(lc = 50 mAde, VCE = 1.0 Vde)
(lc = 250 mAde, VCE = 1.0 Vde)
(lc = 500 mAde, VCE = 1.0 Vde)
(lc = 1.0 Ade, VCE = 1.0 Vde)
hFE
30
30
30
15
Collector-Emitter Saturation Voltage(l)
(lc = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 0.1 Ade)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 1.0 Ade, IB = 0.1 Ade)
Base-Emitter On Voltage(l)
(IC = 250 mAde, VCE = 1.0 Vde)
-
-
150
-
Vde
-
0.3
0.6
VBE(sat)
-
1.5
Vde
VBE(on)
-
1.0
Vde
Cobo
-
100
pF
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IC = 0, 1= 0.1 MHz)
Small Signal Current Gain
(IC = 100 mAde, VCE = 10 Vdc, I = 1.0 kHz)
hie
30
-
-
Current Gain - High Frequency
(VCE = 10 V, IC = 100 mA, I = 1 MHz)
ihlei
1.0
-
-
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle 2.0%.
'Indicates Data in addition to JEDEC Requirements.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-168
2N4237,2N4238,2N4239
FIGURE 1- POWER-TEMPERATURE DERATING CURVE
10
en 8.0
~
~ 6.0
........
~
~
ffi 4.0
~
~
c
~
ce
..........
~
2.0
o
o
40
20
60
•
r-.....
............. to...
80
100 120
140
Te , CASE TEMPERATURE (OC)
160
-......
i"......
180
200
Safe Area Curves are indicated by Figure 5. All limits are applicable
and must be observed.
SWITCHING CHARACTERISTICS
FIGURE 2 - SWITCHING TIME EQUIVALENT CIRCUIT
FIGURE 3 - TURN·ON TIME
5.0
Vee
Vee ~ 30 V I I I
........ /:' Vi le ll , ~ 2? t ~n'
I.{: .....
Vee ~ 60 V
3.0
RL
2.0
V"
Yin
RK
VeE/olf)
-4.0V
t, <; 15 ns
100 < I, <; 500
I, <; 15 ns
APPROX
+l1V
1.0 ~
].
CJd «C eb
;::
-"
0.3
fLS
0.2
DUTY CYCLE", 2.0%
II
0.1
1,-
I""'-
1"-
30 V
Vee
0
VBE(off)
10
TURN·OFF PULSE
t
I
r-: Vee 60 V
.~ ~ 1V"lolfl ... 20 V
~
r-,
0.07
0.05
I,
50 V
~ 110; UNLbs l N~TEb
TJ = 25~C _
- - - TJ - 150'C
I
~I"-..
0.7
0.5 Vee
!;g
-'Ie/l:
20
30
50 70 100
200 300
Ie. COLLECTOR CURRENT ImAI
500 700 1000
FIGURE 4- THERMAL RESPONSE
Q
~
1.0
07
D 0.5
~ 0.5
IciJ
~ 0.3
~ 0.2
0.05
~ 0.1
~ 0.0 7
~ 0.05
"'
",1003
:;;
i= 10.02
'2 0.01
--
0.1
~
0.01
-
0.01
-1"1\
SINGLE PULSE
III
002 0.03
0.05
0.1
~
OJellJ ~ rllJOJe
HUL
~t-.-j
...11"[~
,.,.
-
......, -;:::;
:-
DUTY CYCLE, D ~ t,tl,
I
OJC ~
OJC ~
=f=
=~
=1=
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AI I,
-r---r---r---r---
TJI.'I- Tc ~ Pl.» OJclU
I I I IIIII
0.2
0.3
05
1.0
2.0
3.0
5a
10
I II
20
30
I, TlMElmsl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-169
29.0°C/Max
25°C/W Typ
50
100
I
200
300
500
1000
2N4237,2N4238,2N4239
FIGURE 5-ACTIYE-REGION SAFE OPERATING AREAS
3.0
~i',
2.0
1.0
:5
0.7 r-0.5
""
~
~
f== -------
I
,
TJ = 200'C
1r
.....
~
.I . . . . . .
~_1.0m'
-.......s~ms"""" ......
I
.... ,
I
....
..........
de
DC THERMAL
LIMITATION AT Te
25'C
....
I
I
I I I I I
0.3 r--I
~ 0.2 r - - - - - - SINGLE PULSE THERMAL
~
.9 0.1
0.07
0.05
r--I
I
I
~
I
... ...
100
r-.... 1".../""
.....
There are two limitations on the power handlmg ability of a transistor: junction temperature
and secondary breakdown. Safe operating area
curves indicate Ic- VeE limits of the transistor that
must be observed for reliable operation; I.e., the
transistor must not be subjected to greater diSSIpation than the curves indicate
For this particular transistor family, the thermal curves are the IImltmg design values, except
for a small portion of the de curve. The pulse
secondary breakdown curves are shown for
informatIon only.
,
I I I I
SECONDARY BREAKDOWN
LIMITATION
I
I
...
..
... ...
LIMITATION AT Te ~ 25'C
8
•
..
.......... .....,
2N4237
2N423'
2N4239
0.03
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
VeE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
FIGURE 6- STORAGE TIME
5.0
3.0
2.0
].
:g
;::
--
FIGURE 7- FALL TIME
5.0
-
=-:.lell,.,.. 10
3.0
-
lel l,
:..1.0~S
59!!
RC
59!!
DUTY CYCLE = 2.0%
SCOPE
SCOPE
200 n
-10.85 V
PU LSE WIDTH =200 ns
RISE TIME ~ 2.0 ns
DUTY CYCLE:: 2.0%
To obtain data for turves, voltage levels are approximately as shown, RS and RC are varied.
+3.0 V
TRANSIENT CHARACTERISTICS
- - - 25°C
---100°C
FIGURE 4 - CHARGE DATA
FIGURE 3 - CAPACITANCES
100
10
50
...
Q.
"'
....
z'"
1.0
5.0
C,b
30
3.0
20
~ 2.0
5
'" 0.7
d
Ccb
0.5
3.0
0.3
2.0
0.2
°T
"'v
.. 1.0
5.0
Vee - 30 v
le/ls =10
/
"'~
10
<3
~
1==
r---
°A
~
0.1
1.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
REVERSE VOLTAGE (VOLTSI
20 30
50
100
10
20
100
100
10
10
" "-
]
30
"';::
20
'"
"
i'-
......
~-
VSE(offi = 0 V
10
1.0
200 300
50
100
IC' COLLECTOR CURRENT (mAl
500
1000
FIGURE 6 - RISE TIME
FIGURE 5 - DELAY TIME
50
30
IC/IS = 10
'1
Vee =30 V
IC/IS
I''''
50
=10
.~
!
30
"
,.
"'
VSE(offl" 2.0 V
;:: 20
"" "
~-
~
'""'"
10
i"
/,1
1.0
5.0
5.0
10
20
30
50 10 100
200 300
IC' COLLECTOR CURRENT (mAl
500 700 1000
10
20
30
200 300
50 10 100
IC' COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-176
500 100 1000
2N4404,2N4405
FIGURE 8 - FALL TIME
FIGURE 7 - STORAGE TIME
1000
700
500
_
300
'""'
200
'""'~
100
.s
lSI - IS2
IC/IS 10
I
VCC -30V
-t~
i=
to
-~
1',
I"
100
r--I.
-r-+.., i"-
]
VCC=30V
IC/IS =10
IS1 -I S2
t',
70
ts' = ts ·113 1f
70
50
0
200
i'
30
......
1~
20
20
10
10
20
30
10
10
500 700 1000
50 10 100
200 300
IC' COLLECTOR CURRENT (mAl
50
30
20
10
100
200
500 700 1000
300
lC' COLLECTOR CURRENT (mAl
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE
= 10 Vdc, T A = 25"C
FIGURE 9 - FREQUENCY EFFECTS
10
\~
9.0
8.0
!
100 pA. RS = 680
~
6.0
~
"'
"''"
:0
'"..:
I I I I II
..:
oZ
I
RS::;: Optimum Source Resistance
4.0
w
"'
0
~
3.0
z
~II
1.0
6.0
100 pA
!\
5.0
"
4.0
\
.: 3.0
2.0
2.0
1.0
1.0
0.020.03 0.05
01
0.2 0.3 0.5
1.0
f. FREQUENCY (kHzl
2.0 30
5.0
I11I
50
10
"
\
IC=1.0mA
o
0.01
l
.II
Z
~.
V
"'l
1/
V
Jo 'pl
B.O
10 pA. RS = 7.0 k ohms
~ 5.0
I II
\
9.0
IC -1.0 mA.IRS -100
CD 7.0
~
10
I II
1111
~
FIGURE 10 - SOURCE RESISTANCE EFFECTS
:/
J
1I
J
"
V
/
""
f
=1.0 kHz
II
I I
100
200300 500 1.0k
2.0k 3.0k 5.0k 10k
RS' SOURCE RESISTANCE (ohmsl
20k 30k 50k
h PARAMETERS
VCE = 10 Vdc,
f = 1.0 kHz, T A
=
25"C
This group of graphs illustrates the relationship of the "hI' parameters for this series of transistors. To obtain these
curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph.
FIGURE 11 - CURRENT GAIN
FIGURE 12 - INPUT IMPEDANCE
300
30
20
200
Z
~ 100
f-~NIL
I-- f--
f-
~
'"
B
70
50
30
-
in
3
:::-I-
I---
''""
-
0
7.0
'-' 5.0
Z
~
"'
2
f--
~
~
1
:J"'..
~
~ t-'
:--...
~UNITI
~
3.0
--..::~
2.0
" ....... ,
f-
ie
V
;!'
'"
1.0
~~
:e- 0.7
20
15
0.1
10
~ "'--4
r--.
0.2
03
0.5
2.0
3.0
1.0
IC. COLLECTOR CURRENT (mAl
5.0
0.5
0.3
0.1
10
0.2
03
1.0
2.0
3.0
0.5
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-177
5.0
10
•
2N4404, 2N4405
FIGURE 13 - VOLTAGE FEEDBACK RATIO
f
~
o
~
100
100
70
50
70
50
E
30
20
'"'-'
10
7.0
~
5.0
30
w
u
20
>>-
~
>- 5.0
ie
........
"
0
UNIT 1
I
1.0
0.1
!;
0.2
0.3
•
0
10
« 7.0
2.0
~
«
........
«
aC> 3.0
•
.3
z
~ ""4
~~_
i>
FIGURE 14 - OUTPUT ADMITTANCE
r-4
3.0
P 2.0
--
1.0
2.0
30
0.5
IC. COLLECTOR CURRENT ImAI
50
./
1/
..,
--3
2f-- f-: "..
Unit 1
.."
_f.-"
1.0
0.1
10
...-::
?
I I
02
0.3
3.0
05
1.0
2.0
IC. COLLECTOR CURRENT ImAI
5.0
10
STATIC CHARACTERISTICS
FIGURE 15 - DC CURRENT GAIN
0:
w
10
7.0
5.0
«
:::;
3.0
a:
'"
2.0
z
1.0
0.7
0.5
0
....
~
a:
:::>
<.>
<.>
0
i
-
I
~
~
VCE=I.OV
VCE 10V
TJ = 17S"C
N
\
t-.
-
2S"C
0.3
t-
----"- r- r- -
:::-1.:::
-
-.......:;
-SS"C
0.2
I'..:
r-..
0.1
1.0
20
3.0
5.0
7.0
20
30
50
70
IC' COLLECTOR CURRENT ImAI
10
200
100
300
500
700
1000
FIGURE 16 - COLLECTOR SATURATION REGION
_
1.0
I I
11
I
J
'C=1.0mA
lOrnA
S
o
.
~
w
0.8
~
I
\
0.6
~
~
0.4
I'
\
~_
0.2
...
<.>
<.>
>
'-.. .........
........ ........
......
0.02
\
"\.
r--....
..... r--,
r- I-
.....
roo-
0
0.0050.007 0.01
500 mA
-"
o
o
I
100mA
o
;;
TJ =2S"C
0.03
0.05 0.07
0.1
0.2
0.3
0.5
OJ
1.0
2.0
3.0
' B' BASE CURRENT {mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-178
5.0
7.0
10
20
30
50
2N4404,2N4405
FIGURE 17 - "ON" VOLTAGES
1.0
I II IIII
I II IIII
O.S
f-
in
~
.
0.6
~
0.4
0
~
I
I
IV~E~..lti!II~/IBI'110
FIGURE 18 - TEMPERATURE COEFFICIENTS
+1.0
iI'
,/
eVC 101 v CE(sa!)
~
:::::
~
.5- 1.0
VSE (on)@V CE -l.0V-
...
l-
ffi
to
«
I I II
I I
0
>
1.0
2.0 3.0 5.0
10
20 30
50
-3.0
.,.'
l~fIE("i)~
eVS for VBE
8
,/
0.2
o
f-
U
~-2.0
-4.0
100
200 300 500
1000
1.0
2.0 3.0
5.0
10
20 30
50
100
IC. COLLECTOR CURRENT (mA)
IC' COLLECTOR CURRENT (mA)
RATINGS AND THERMAL DATA
FIGURE 19 - SAFE OPERATING AREA
3.0
2.0
.., -- t-'- -' -...'"
~
:'>
0.3
'"0
0.2
~
"-
0.5
13
8
...
1.0
0.1
.,:;0.07
0.05
dC~
------
0.03
1.0
"
3.0
5.0 7.0
10
0.1 ms
The data of Figure 19 is based upon TJ(pk) '"
200°C, TC is variable depending upon conditions.
Pulse curves are valid for duty cycles to 10% provided TJ(pk) ~ 200·C. TJ(pkJ may be calculated
from the data in Figure 20. At high case temperatures, thermal/imitations will reduce the power that
can be handled to values less than the limitations im-
1.0ms
TJ 200·C
"\.
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC' 25·C (SINGLE PULSE)
CURVES APPLY BELOW
RATED VCED
2.0
The safe operating area curves indicate le'VeE
limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.
20
"\.
posed by second breakdown.
30
50
70
100
VCE • CDLLECTOR·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-179
200 300 500
1000
II
2N4406
2N4407
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
80
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
2.0
Amps
Total Device Dissipation @ TA = 25°C'
Derate above 25°C
Po
1.25
7.15
Watts
mWrC
Total Device Dissipation @ TC = 25°C'
Derate above 25°C
Po
8.75
50
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
°cm
°cm
Rating
'Collector Current -
•
Continuous'
Operating and Storage Junction
Temperature Range
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
3
fi1
~I[
Thermal Resistance, Junction to Case
Rf1JC
20
Thermal Resistance, Junction to Ambient
Rf1JA
140
,
Emitter
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
~~'''".'
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
·1
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lC = 10 mAde, IB = 0)
(lc = 10 fl.Adc, IE = 0)
(IE = 10 ~dc, IC = 0)
(VCB = 60 Vdc, IE = 0)
V(BR)CEO
80
V(BR)CBO
80
V(BR)EBO
5.0
ICBO
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
-
-
Vdc
Vdc
Vdc
25
nAdc
25
nAdc
ON CHARACTERISllCS
DC Current Gain(1)
(lC = 10 mAde, VCE = 5.0 Vdc)
hFE
-
2N4406
2N4407
30
80
(lc = 150 mAde, VCE = 5.0 Vdc)
2N4406
2N4407
30
80
-
(lc = 500 mAde, VCE = 5.0 Vdc)
2N4406
2N4407
30
80
120
240
(lC = 1.0 Adc, VCE = 5.0 Vdc)
2N4406
2N4407
20
30
2N4406, 2N4407
(lc = 1.5 Adc, VCE = 5.0 Vdc)
-
-
10
-
-
0.2
0.4
0.7
1.5
-
-
0.9
1.3
1.5
-
1.0
Vdc
750
MHz
15
pF
160
pF
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(IC = 1.0 Adc, IB = 100 mAde)
(lC = 1.5 Adc, IB = 150 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 150 mAde, IB = 15 mAde)
(lc = 1.0 Adc, IB = 100 mAde)
(lC = 1.5 Adc, IB = 150 mAde)
VBE(sat)
Base-Emitter On Voltage
(lc = 500 mAde, VCE = 1.0 Vdc)
VBE(on)
tr
150
Vdc
Vdc
0.9
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
Emitter-Base Capacitance
(VBE = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ceb
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-180
-
2N4406,2N4407
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°e unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(Vee = 30 Vdc, VBE(off) = 2.0 Vdc,
IC = 1.0 Adc, IB1 = 100 mAde)
td
-
15
ns
tr
-
60
ns
(VCC = 30 Vdc, IC = 1.0 Adc,
IB1 = IB2 = 100 mAde)
ts
-
175
ns
tf
-
50
ns
(1) Pulse Test: Pulse Width", 300 fLS, Duty Cycle'" 2.0%.
'Indicates Data in addition to JEDEe Requirements.
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-181
2N4406,2N4407
STATIC CHARACTERISTICS
FIGURE 1 -
---,
2.5
2.0
z
;;:
~
'"
13
......
1-1-
--
~
:::; 0.1
,.
-55°C
'"z
0.5
0
•
~
;
i
i'
I....
0.8
1111
I
I II IIII
I
~
~
-
VeElsat! = Ic/le = lU
0.1
.J.,...-
0.2
5.0
10
1.0
2.0
lB. BASE CURRENT ImAI
0.5
FIGURE 4 -
~I
'II 1111
VeE 10nl@VCE
20
50
100
TEMPERATURE COEFFICIENTS
2.0
1.0
<.>
1.0 V
3;
....
ill
1--
E
OVC 'or VCE lsatl
u
~ 0.4
i
0.2
I I Iii
a
1.0
2.0
5.0
10
20
50
100
200
-3.0
1.0
500 1000
IC. COLLECTOR CURRENT ImAI
FIGURE 5 3.0
2.0
Ii:
--
r"-
'\.
r\. 0.1 msDC
''\
I'..
-f--
-----
0.1
~ 0.01
0.05
II III11
2.0
5.0
10
20
50
100
IC. COLLECTOR CURRENT ImAI
TJ =200"C
OC
SECDNDARY eREAKDDWN LIMITeD
BONDING WI RE LIMITED.
THERMALLY LlMITED@
TC = 25'c ISINGLE PULSEI
I'\.
'\,.
'\
CURVES APPLY BELOW
RATED VCEO
0.03
1.0
2.0
3.0
5.0
7.0
10
200
500 1000
The safe operating area curves indicate IC-VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 5 is based upon TJ(pk) ~ 200°C; TC is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) '" 200°C. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
~ 0.5
0.2
;Ojrj~~E
H
0.1
0.3
8jVr
'\.
1.0ms ' \
!5 1.0
.....
f-
SAFE OPERATING AREA
~-
.- -
1.0
-2.0
~
VCE lsatl @Icile = 10
~
I
200 300 500 100 1000
o
<.>
\
r-.
~
>
0
0.2
>
«
"'
'"0
1
o
w
13
\
~
1.mJ
~ 0.6
....
ill
\
1\
"ON" VOLTAGES
~
,.
0.8
~ 0.4
I"-...
1000 rnA
500 rnA
~ 0.6
II
TJ=25 0C
TJ= 25 0C
100 rnA
~
o
VCE = 10 V
FIGURE 3 -
I
Ic=10mA
.
2.0 3.0 5.01.0 10
20 30 50 10 100
IC. COLLECTOR CURRENT ImAI
1.0
II
>
VCE = 1.0 V
--
0.3
0.25
1.0
1.0
~
o
Nt\:
----
N
«
FIGURE 2 -' COLLECTOR SATURATION REGION
-f-
~
~
1.0 ~
"'....
DC CURRENT GAIN
V,j
TJ = 1150C
20
30
50
10 100
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-182
2N4406,2N4407
TRANSIENT CHARACTERISTICS
25°C - - - 1000C
FIGURE 7 - CAPACITANCES
FIGURE 8 - CHARGE DATA
100
500
50 ~
20
~
~'00
Cob
~
w
'"Z
""t:;
::
""'"
l-
§:VCC - 30V
f=
r- r lclla -10
200
50
i"20
10
QT
;;; 5.0
~
~ 2.0
d 1.0
Ccb
.,...
0.5
II
QA
10
0.2
5.0
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
REVERSE VOLTAGE (VOLTS)
50
100
1.0
5.0
10
20
50
100
lC. COLLECTOR CURRENT (rnA)
2.0
FIGURE 9 - TURN-ON TIME
1000
700
500
500 1000
FIGURE 10- TURN-OFF TIME
1000
700
lc/ia = 10
500
300
-
300
200
Id@VaE(off)
--.;;:
]
""~
~ 100
;:: 70
oJ
200
2.0 V
200
]
.........
til---...
~ 100
1,@VCC=30V
;::
50
70 = I f
50
30
30
oJ
r-..
20
'd @VaE (om = 0
........
.......
10
10
20
50
100
-
-
IC/18" 10
500
10
1000
-
I
10
200
-
I-- VCC = 30V
20
I'
---
r-I;-t, 1/8 If
20
30
lC. COLLECTOR CURRENT (rnA)
50 70 100
200 300
IC. COLLECTOR CURRENT (rnA)
500 700 1000
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 12 - TURN-OFF TIME
FIGURE 11- TURN-ON TIME
-3~
V
-30V
+2
. 0V
j
-- J
-OV
SCOPE
100
-11.1 V
PULSE WIDTH = 200 ns
RISE TIME <::2.0 ns
DUTY CYCLE <:: 2.0%
n
-11.1 V
I
~
I
f
11
I
f-I
I
I
I
I
13
I---
12~
30 n
SCOPE
100 n
lN916
:
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-183
10< q< 500ps
12< 10 ns
'3> 1.0ps
DUTY CYCLE -s; 2.0%
+4.0 V
2N4453
For Specifications, See 2N869A Data.
2N4890
CASE 79-02, STYLE 1
TO-39 (T0-205AD)
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Collector Current -
IC
1.0
Ade
Total Device Dissipation @ T A = 25°C
Derate above 25°C
Continuous
PD
1.0
5.7
Watt
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
Refer to 2N4033 for graphs.
=
ELECTRICAL CHARACTERISTICS (TA
25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
. "LBR)CEO
40
-
-
Vde
V(BR)CER
50
-
-
Vde
V(BR)CBO
60
5.0
-
Vde
V(BR)EBO
-
-
-
0.25
pAde
-
0.25
/LAde
25
50
15
130
140
-
0.12
1.4
Vde
0.82
1.7
Vde
0.74
1.7
Vde
MHz
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
(VeE
(VCE
=
=
(lC
(IE
(lC
(lC
=
=
=
=
100 pAde, IB
10 mAde, RBE'
100 pAde, IE
100 pAde, IC
60 Vde, VaE(off)
60 Vde, VBE(off)
=
=
= 0)
= 10 ohms)
= 0)
= 0)
1.5 Vde)
ICEX
1.5 Vde)
IBL
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 150 mAde, VCE = 2.5 Vde)
(lC = 150 mAde, VCE = 10 Vde)
"(lC = 500 mA, VCE = 5 Vde(l)
hFE
Collector-Emitter Saturation Voltage
(lC = 150 mAde, la = 15 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, la = 15 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 150 mAde, VCE = 2.5 Vde)
VaE(on)
-
-
-
-
250
-
SMALL-SIGNAL CHARACTERISTICS
tr
100
280
-
Cobo
-
9.0
15
pF
Cibo
-
60
80
pF
(VCC = 30 Vde, VaE(off) = 0.8 Vde,
IC = 150 mAde, IBI = 15 mAde)
td
-
15
50
ns
tr
20
20
50
ns
(VCC = 30 Vde, IC = 150 mAde,
IBI = IB2 = 15 mAde)
ts
-
110
200
ns
tf
-
20
70
ns
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
Output Capacitance
(Vca = 10 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
140 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse WIdth = 300 /ts, Duty Cycle., 2.0%.
"Indicates Data in Addition to JEDEC Requirements.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-184
2N4926
2N4927
MAXIMUM RATINGS
Symbol
2N4926
2N4927
Unit
Collector-Emitter Voltage
Rating
VCEO
200
250
Vde
Collector-Base Voltage
VCBO
200
250
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
IC
50
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
1.0
5.71
Watt
mWf'C
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
5.0
28.6
Watts
mWf'C
TJ, T stg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
,f!} ":~".".'
2
1
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RIIJC
35
°C/W
Thermal Resistance, Junction to Ambient
ROJA
175
°C/W
ELECTRICAL CHARACTERISTICS (TA
NPN SILICON
~ 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC ~ 10 mAde, IB ~ 0)
Collector-Base Breakdown Voltage
(lC ~ 0.1 mAde, IC ~ 0)
V(BR)EBO
ICBO
2N4926
0)
0, TA
0)
0, TA
200
250
-
200
250
-
~
100°C)
~
100°C)
7.0
-
lEBO
-
0.1
hFE
10
15
20
20
-
Vde
!LAde
0.1
10
0.1
10
2N4927
Emitter Cutoff Current
(VBE ~ 5.0 Vde)
Vde
V(BR)CBO
2N4926
2N4927
Emitter-Base Breakdown Voltage
(IE ~ 0.1 mAde, IC ~ 0)
Collector Cutoff Current
(VCB ~ 100 Vde, IE ~
(VCB ~ 100 Vde, IE ~
(VCB ~ 150 Vde, IE ~
(VCB ~ 150 Vde, IE ~
Vde
V(BR)CEO
2N4926
2N4927
!LAde
ON CHARACTERISTICS (1)
DC Current Gain
(lC
(lC
(lc
(lC
~
~
~
~
3.0 mAde, VCE
10 mAde, VCE
30 mAde, VCE
50 mAde, VCE
~
~
~
~
10 Vde)
10 Vde)
10 Vde)
20 Vde)
-
-
200
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde,lB ~ 1.0 mAde)
(lC ~ 30 mAde, IB ~ 3.0 mAde)
VCE(sat)
-
1.0
2.0
Vde
Base-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
(lC ~ 50 mAde, IB ~ 3.0 mAde)
VBE(sat)
-
1.2
1.5
Vde
VBE(on)
-
1.5
Vde
MHz
Base-Emitter On Voltage
(lC
~
~
30 mAde, VCE
10 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
(VCB
Collector-Base Capacitance
Input Impedance
(lC
~
Voltage Feedback Ratio
(lC
~
(lC
~
(lc
20 Vde, IE
~
~
10 mAde, VeE
10 mAde, VCE
Real Part 01 Input Impedance
~
0, I
10 Vde, I
10 mAde, VCE
~
tr
30
300
Ceb
-
6.0
pF
hie
75
2000
ohm
1.0 kHz)
h re
0.1
2.0
X 10-4
~
hie
25
250
-
-
hoe
50
"mhos
Re(hie)
4.0
200
ohms
(lC ~ 10 mAde, VCE ~ 20 Vde, I ~ 20 MHz)
10 mAde, VCE
Small-Signal Current Gain
Output Admittance
~
~
~
~
140 kHz)
1.0 kHz)
10 Vde, I
~
~
10 Vde, I
10 Vde, I
~
1.0 kHz)
1.0 kHz)
(lC ~ 10 mAde, VCE ~ 20 Vde, I ~ 5.0 MHz)
(1) Pulse Test: Pulse Width", 300 "s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-185
II
2N4928
thru
2N4931
MAXIMUM RATINGS
Rating
•
Symbol
2N4928
2N4929
2N4930
2N4931
Unit
Collector-Emitter Voltage
VCEO
100
150
200
250
Vde
Collector-Base Voltage
VCBO
100
150
200
250
Vde
Emitter-Base Voltage
VEBO
4.0
4.0
4.0
4.0
Vde
Collector Current Continuous
IC
100
500
500
500
mAde
Total Device Dissipation
@TA= 25'C
Derate above 25'C
Po
0.6
3.4
1.0
5.71
1.0
5.71
1.0
5.71
Watt
mWfC
Total Device Dissipation
@TC=25'C
Derate above 25'C
Po
3.0
17.2
5.0
28.6
5.0
28.6
5.0
28.6
Watt
mWfC
Operating and Storage
Junction Temperature
Range
TJ, Tstg
2N4930 and 2N4931 JAN, JTX &
JTXV AVAILABLE
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
liJ "~()"~"'
3
-65 to +200
~![
,
Emitter
GENERAL PURPOSE
TRANSISTOR
'C
PNP SILICON
Refer to 2N3494 for graphs for 2N4928.·
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Charaderistic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
Vde
V(BR)CEO
100
150
200
250
-
100
150
200
250
-
-
4.0
-
-
-
0.5
0.5
1.0
-
0.5
1.0
All Types
20
-
(lC = 10 mAde, VCE = 10 Vde)(1)
2N4928, 2N4929
2N4930, 2N4931
25
20
200
200
(lC = 50 mAde, VCE = 10 Vdc)(1)
(lC = 30 mAde, VCE = 10 Vde)(1)
2N4928, 2N4929
2N4930, 2N4931
20
20
-
-
0.5
5.0
-
1.0
Collector-Base Breakdown Voltage
(IE = 0, IC = 100 pAde)
2N4928
2N4929
2N4930
2N4931
Vde
V(BR)CBO
2N4928
2N4929
2N4930
2N4931
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 75 Vde, IE = 0)
(VCB = 150 Vde, IE = 0)
ICBO
2N4928
2N4929
2N4930, 2N4931
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
(VBE = 3.0 Vde, IC = 0)
lEBO
2N4928, 2N4929
2N4930, 2N4931
-
Vde
pAde
pAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
hFE
Collector-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
2N4928, 2N4929
2N4930, 2N4931
Base-Emitter On Voltage
(lC = 10 mAde, VCE = 10 Vde)
VBE(on)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-186
-
Vde
Vde
2N4928 thru 2N4931
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
100
20
1,000
200
Unit
SMALL-8IGNAL CHARACTERISTICS
Current·Gain - Bandwidth Product
(lc = 20 mAde, VCE = 20 Vdc, f = 100 MHz)
(lC = 20 mAde, VCE = 20 Vdc, f = 20 MHz)
2N4928, 2N4929
2N4930, 2N4931
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 140 kHz)
NCB = 20 Vdc, IE = 0, f = 140 kHz)
(VCB = 20 Vdc, IE = 0, f = 140 kHz)
2N4928
2N4929
2N4930, 2N4931
Emitter-Base Capacitance
(VBE = 2.0 Vdc, IC = 0, f = 140 kHz)
(VBE = 1.0 Vdc, IC = 0, f = 140 kHz)
(VBE = 0.5 Vdc, IC = 0, f = 140 kHz)
2N4928
2N4929
2N4930, 2N4931
fT
Ccb
Ceb
(1) Pulse Test: Pulse Width .. 300 p$, Duty Cycle .. 2.0%.
Refer to 2N3634 for graphs for 2N4929.
Refer to 2N3743 for graphs for 2N4930 and 2N4931.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-187
MHz
pF
-
-
6.0
10
20
-
40
80
400
pF
•
MAXIMUM RATINGS
Rating
Symbol
2N5022
2N5023
Unit
VCEO
50
30
V
Collector-Emitter Voltage
VCES
50
30
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current - Continuous
IPulse Width = 300 p,S, DC = 1%)
IC
1.0'
A
Total Device Dissipation @ TA = 25°C
Derate above 2SoC
PD
1.0
S.72
Watts
mWrC
Total Device Dissipation @ TC = 2SoC
Derate above 2S·C
PD
4.0
22.8
Watts
mWrC
TJ, Tstg
-65 to +200
·C
TL
+300
·C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
43.8
·CIW
Thermal Resistance, Junction to Ambient
R8JA
175
·CIW
Collector-Emitter Voltage
a
I
Operating and Storage Junction
Temperature Range
Maximum Lead Temperature
ISoldering, 60 sec max)
2NS022
2NS023
CASE 79-02, STYLE 1
TO-39 (TO-205ADI
,f
2
THERMAL CHARACTERISTICS
Characteristic
~_~'~o,
1
1 Fmltter
GENERAL PURPOSE
TRANSISTOR
PNPSILICON
"Indicates Data in Addition to JEDEC Requirements.
Refer to 2N3467 for graphs.
ELECTRICAL CHARACTERISTICS ITA = 2S·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IIc = 100 !-
.sw
to
«
:;
0
•
>
:;
....
~
30 ~ IE~+~.OlmA
~
-20
~
- -
-D.5~ .....
-30
:;
~
r-_
./1
~
8
'"
;;;
:,..-1-'""
OmA
-5.0
w
....
....
-2.0 mA
~ -15
-5.0
-0.5
-1.0
-2.0
IB, BASE CURRENT (mAl
-10
-20
-75
%
~
200
co
100
~
'"
o
~
'~"
o
'-'
!
+D.l
~TJ--550C
~~
I, = 100pA
, = 1.0 kHz
25°C
-0.1
z-
-D.2
0
, ....
z
""w
t;u:
w'"
-'w
0<:;
20
......
10
-550~1t
0.05
",,,,
w=>
-0.6
"'w
wo.
zw"
e--='
....
25°CfFEli
2.0
0.02
-0.5
t:~
5.0
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mAl
2.0
5.0
-0.3
-0.4
-,0
0'"
"'W
TJ = 175°C
1.0
0.01
w '"
"':.:
'0
50 175°C
10
I- TJ = 175°C
0"11111
//
....z
200
I
::::
::>
100
-5~oh
'-'
'"
'"
~
I, = l00pA
' = 1.0 kHz
I
-D.9
0.01
"I
60
0.02
40
....
30
'"
'"
~
20
;(
to
50
20
:>
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (mAl
2.0
5.0
10
20
j
50
i"'"
10
0
0.05
"'
25°C
..........
I
r-....
_5~DC
I
0.1
0.2
r0.5
1.0
2.0
5.0
IE, EMITTER CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-192
I I I
VEC = 0.5 V
r- TJ = 1~50~
'-'
0
0.1
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mAl
I I
I I
50
!z
~
10
0.05
0.05
1
~
25°C
-+-'I'"
w
TJ = 25°C TO -55°C
I
-0.8
70
.3
i!!
f-1""
;(
175
-D.7
c
0
VCE 1.0 V
to
150
FIGURE 6 - CURRENT GAIN (Inverted Connectionl
versus EMITTER CURRENT
1000
z
25
50
75
100 125
TJ,JUNCTION TEMPERATURE (OCI
cJl
FIGURE 5 - CURRENT GAIN versus
COLLECTOR CURRENT
500
-25
TJ = 25°C TO 175 0
0>0
tnt;)
z
f'
'"z
.... '"
«-
500
~
~
w
1000
-50
I---
FIGURE 4 - EMITTER-COLLECTOR "ON" RESISTANCE
TEMPERATURE COEFFICIENT versus BASE CURRENT
FIGURE 3 - EMITTER-COLLECTOR "ON" RESISTANCE
versus BASE CURRENT
;
- r---
-10
w
>
-0.2
5.0
0
./I'-2.0mA
-50
-0.1
-
IE L2.oL
10
0
>
VI-"'"
/-1.0mA
~ -40
>
«
~r- rw..5m
10
O.J:--
-10
~
IB=I.0mA
15
to
~
20
0
:>
.sw
TJ=U
40
10
20
50
2N5230
FIGURE 7 - COLLECTOR CUTOFF CURRENT versus
JUNCTION TEMPERATURE
FIGURE 8 - EMITTER CUTOFF CURRENT ve....s
JUNCTION TEMPERATURE
1000
1000
1
....-
~ 100
0:
B
.......
10
~
~
-
o
§
1.0
r-- VCB
0:
.,.
o
~ o. 1
50 V
.;'"
./
./
VEB 15 V
VCB-15 V
V
.;'"
VEB=50V
1
L
2
ci 0.0 1
I
~
0.00 1
0.00 I
o
20
W
~
W
100
lW
lW
1M
TJ, JUNCTION TEMPERATURE (DC)
180
200
o
20
0.20
10
0.18
O: 0.14
::;;~w
0:<0
........
0.12
w
0.10
0«
u~
0
~>
-55 0 C,
"-
8~ 0.08
~~
u ....
>~
«
....
;:;
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
I~
180
TJ = 25 0 C
~ Cob
vo""' VCB
'~ i'
~
4.0
I"-
r-..
Cib versus VEe
2.0
b::;;;~
0.02
r--
5
,/
0.04
6.0
z
/~ V25 0 C
0.06
0
0.05
~
::
-
---r-..
~
w
u
rz;
~z
.;:.~
/,
IIJ
IC/IB = 10
M
W
100
lW
IW
TJ, JUNCTION TEMPERATURE (DC)
FIGURE 10 - JUNCTION CAPACITANCE versus
REVERSE BIAS VOLTAGE
FIGURE 9 - COLLECTOR-EMITTER SATURATION
VOLTAGE versus COLLECTOR CURRENT
w
....
....
W
20
50
I
o
0.1
0.2
0.5
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-193
I5.0
10
1.0
2.0
REVERSE BIAS (VOLTS)
20
50
100
2N5320
2N5321
CASE 19-02, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
Symbol
2N5321
Unit
Collector-Emitter Voltage
VCEO
75
50
Vde
Collector-Base Voltage
VCBO
100
75
Vde
Emitter-Base Voltage
VEBO
7.0
5.0
Vde
Base Current
Collector Current -
•
2N5320
IB
1.0
IC
2.0
Ade
Po
10
0.057
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Continuous
Total Device Dissipation @ T C = 25·C
Derate above 25·C
Operating and Storage Junction
Temperature Range
Ade
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
NPNSILICON
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 100 mAde, IB = 0)
Collector Cutoff Current
(VCE = 100 Vde, VBE = 1.5 Vde)
(VCE = 70 Vde, VBE = 1.5 Vde, TC
(VCE = 75 Vde, VBE = 1.5 Vde)
(VCE = 45 Vde, VBE = 1.5 Vde, TC
Vde
V(BR)CEO
2N5320
2N5321
75
50
-
-
0.1
5.0
0.1
5.0
mAde
ICEX
2N5320
=
150·C)
=
150·C)
-
-
2N5321
Emitter Cutoff Current
(VBE = 7.0 Vde, IC = 0)
(VBE = 5.0 Vde, IC = 0)
-
mAde
lEBO
2N5320
2N5321
-
0.1
0.1
30
40
130
250
10
-
-
0.5
0.8
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 500 mAde, VCE
(lc
=
1.0 Ade, VCE
=
-
hFE
= 4.0 Vde)
2N5320
2N5321
2.0 Vde)
2N5320
Collector-Emitter Saturation Voltage
(lc = 500 mAde, IB = 50 mAde)
VCE(sat)
2N5320
2N5321
Base-Emitter On Voltage
(lC = 500 mAde, VCE = 4.0 Vde)
VBE(on)
2N5320
2N5321
Vde
-
Vde
1.1
1.4
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(lc = 50 mAde, VCE = 4.0 Vde, f
=
10 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC
=
Turn-Off Time
(VCC = 30 Vde, IC
= 500
500 mAde, IB1
mAde, IB1
(1) Pulse Test: Pulse Width", 300
p.S,
=
50 mAde)
=
IB2
= 50
ton
-
80
ns
toff
-
800
ns
mAde)
Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-194
2N5320, 2N5321
TYPICAL INPUT CHARACTERISTICS
TYPICAL TRANSFER CHARACTERISTICS
COLLECTOR-TO-EMITTER VOLTAGE (VcEI- 4.0 V
.
,
.s 80.
~
~
COLLECTOR-TO EMITTER VOLTAGE (VCEI ; 4.0 V
.
10
.....s
~
1200
=>
'-' 1000
-
-
1
ffi~
ffi
~
-6.0
I AMBIENT TEMPERATURE (TA) ; 25°C
~
'"
~
I
II
:; -4.0
-120 0
tl
1/
VJ,.~BIEN~ TEMP~RATURf (TA) ;,250C -
-80 0
~
8
:2 -400
-2.0
/
/
-0.7
0
-0.9
-1.1
VBE. BASE TO EMITTER VOLTAGE (V)
CURRENT GAIN CHARACTERISTICS versus
COLLECTOR-EMITTER VOLTAGE
-0.7
II
-0.9
-11
VBE. BASE-TO-EMITTER VOLTAGE (V)
MAXIMUM SAFE OPERATING AREAS (SOA)
10
CASE TEMPERATURE (TC) 25°C
(CURVES MUST BE DERATED LINEARLY
WITH INCREASE OF TEMPERATURE)
z
~
!Z
~ 1.0
tl
""
ffi
VCE ; -4.0 V
'-'
c
c
i
-10
g;
tl
~ -1.0
ICMAX.
(CONTINUOUS)
~
MBIENT TEMPERATURE (TA) - 25°C
8
c
E -0.1
z
DC OPERATION
DISSIPATION
LIMITED
,SLOPE; 1)
W
Islb lIMITEO
(SLOPE - 2)
VCEO
MAX -50 V
,2N5323)
35
~
-0.1
-1.0
-10
IC. COLLECTOR CURRENT
-100
-1000
-0.01
-1.0
-10
-100
VCE. COLLECTOR-TO-EMITTER VOLTAGE
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-197
VCEO
MAX;-75V
(2N5322)
2N5415, 2N5416 For Specifications, See 2N3439 Data.
2N5581/82
For Specifications, See 2N2218,A Data.
MAXIMUM RATINGS
Symbol
2N5679
2N5681
2N5680
2N5682
Unit
Collector-Emitter Voltage
VCEO
100
120
Vde
Collector-Base Voltage
VCBO
100
120
Vde
Emitter-Base Voltage
VEBO
4.0
Vdc
IB
0.5
Ade
Rating
Base Current
IC
1.0
Ade
Total Device Dissipation @ TA = 25'C
Derate above 25'C
PD
1.0
5.7
Watt
mWrC
Total Device Dissipation @ TC = 25'C
PD
10
57
mWrC
-65 to +200
'c
Collector Current -
•
Continuous
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
2N5679
2N5680
2N5681
2N5682
PNP SILICON
NPN SILICON
,~"-' ~~"-
Bas~
1 Emitter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
Symbol
Max
Unit
RruC
17.5
'CIW
175
'CIW
RruA
1 Emitter
Watts
3~1[
CASE 79-02, STYLE 1
TO-39 (TO-20SAD)
THERMAL CHARACTERISTICS
Characteristic
B e~
GENERAL PURPOSE
TRANSISTOR
= 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
100
120
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC = 10 mAde, IB = 0)
VCEO(sus)
2N5679, 2N5681
2N5680, 2N5682
Collector Cutoff Current
(VCE = 70 Vde, IB = 0)
(VCE = 80 Vde, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 100 Vde, VEB
(VCE = 120 Vde, VEB
ICEX
(VCE
(VCE
=
=
100 Vde, VEB
120 Vdc, VEB
=
=
1.5 Vde)
1.5 Vde)
=
=
1.5 Vde, TC
1.5 Vde, TC
=
=
150'C)
150'C)
Collector Cutoff Current
(VCB = 100 Vde, IE = 0)
(VCB = 120 Vde, IE = 0)
Vde
!LAde
-
10
10
2N5679, 2N5681
2N5680, 2N5682
-
1.0
1.0
2N5679, 2N5681
2N5680, 2N5682
-
1.0
1.0
-
-
1.0
1.0
-
1.0
40
5.0
150
-
-
0.6
1.0
2.0
-
1.0
IT
30
-
-
Cobo
-
50
pF
40
-
-
-
ICBO
2N5679, 2N5681
2N5680, 2N5682
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
!LAde
mAde
!LAde
!LAde
ON CHARACTERISTICS
DC Current Gain
(lC = 250 mAde, VCE = 2.0 Vde)
(lc = 1.0 Ade, VCE = 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 250 mAde, IB = 25 mAde)
(lC = 500 mAde, IB = 50 mAde)
(IC = 1.0 Ade, IB = 200 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 250 mAde, VCE = 2.0 Vde)
VBE(sat)
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 100 mAde, VCE = 10 Vdc, f
Output Capacitance
(VCB = 20 Vde, IE
= 0, f =
=
10 MHz)
1.0 MHz)
Small-Signal Current Gain
(lC = 0.2 Adc, VCE = 1.5 Vdc, f
=
hfe
1.0 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-198
2N5679,2N5680,2N5681,2N5682
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
Vee
01 Must Be Fast Recovery Type, e.g.
+30 V
MBD5300 Used Above Ie == 100 rnA
MSD6100 Used Below I B = 100 mA
j25~Sr-
VI
V2 ":~9=J
9.0 V
Re
Scope
RB
01
51
t"tf S'10 ns
Duty Cycle = 1.0%
II
-4.0 V
A Band RC Vaned to Obtain Desired Current Levels
For td and t r • 01 LS disconnected and V2 = 0
For PNP test
CirCUit,
reverse diode and voltage polaritLes.
PNP
2N5679,2N5680
NPN
2N5681 , 2N5682
FIGURE 2 - TURN-ON TIME
1.0 k
1.0 k
700
500 f;:--' i".: I,
-........ ........ ~
300
.....
200
~
~
100
1"-.'
....... .....
!
"'~
r.......
~. 70 I--ld@VBE(off):O
~......
200
.......
50
30
20
30
50
70
200
100
300
'f'"
~
.\.
,....
~
100
70
30
r--
.......
300
50
20
VCC:30V
IB1- IB2
TJ - 25 0 C
--ICIIB: 5.0
ICIIB: 10
700
500
VCC - 30 V
IBI IB2
TJ :25 0 C
---IC/IB: 5.0
--ICIIB:IO
::-....
Id@VBE(off) - 0
20
500 700 1.0 k
20
30
IC. COLLECTOR CURRENT (mA)
..... ::::.--...
t-'t-
50 70 100
200 300
IC. COLLECTOR CURRENT (mA)
500 700 1.0 k
FIGURE 3 - TURN-OFF TIME
3.0 k_
2.0 k
1.0
-
k'
f- f- Is
-I--.
5.0 k
VCC: 30 V
IB1: IB2
TJ: 25 0 C
3.0 k
700
]
500
"'
300
">=
200
Is
2.0 k l - -
r-
1.0 k
.s 700
",'f@IC/IB-l0
~
-...
"
t'--..
20
o
' ......
i
If@'L' IB
0
0
30
10
5.0
r--. r-
100
20
30
---
50 0
>.- 30 O~::::"'~IC/IB:lO
f-'f@ ICIIB - 5.0
100
VCC - 30 V
IB1:IB2
TJ: 25 0 C
50 70 100
200 300
IC. COLLECTOR CURRENT (mA)
500 700 1.0 k
0
5010
20
3D
50 70 100
200 300
Ie. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-199
500 700 1.0 k
2N5679,2N5680,2N5681,2N5682
FIGURE 5 - CAPACITANCE
FIGURE 4 - CURRENT·GAIN - BANDWIDTH PRODUCT
700
'" 300
VCE -10 V
f-l0MH,
TJ - 2SoC
~ 200
t;
=>
c
f
100
'":;
0
0
~z
C ib("
~200
~ 100
;;:
to
.:.
O~
~
7.0
~
5.0
~
I"
"
,,'
\
- - - 2NS679, 2NS680
2NS681,2NS682
50
.....
0
20
) - - - - 2NS679,2NS680
- - 2NS681, 2NS682
20
SO
30
70
100
7.00.1
SOO 700 1.0 k
300
200
--
II 1111
10
3.010
r-
Cob
C3 70
0
TJ - 2SoC
r-:::-:: [}...
w
0
z
•
--
r
300
>-
;i\
r:
-
SOD
0.2
O.S
1.0
2.0
10
S.O
20
100
SO
VR, REVERSE VOLTAGE IVOLTS)
IC, COLLECTOR CURRENT ImA)
FIGURE 6 - THERMAL RESISTANCE
a
7 - 0 - 05
5
ROJc(t) - ,It) ROJC
ROJC = 17.5 0CiW Max
3-~2
o CURVES APPLY FOR POWER
2
~
0.1
e:::::-
0.05
1
7
5
--
P(pkl
i . -
00 1
0.2
-12
I 11111
03
05
07
20
10
5a
30
70
20
10
30
50
70
FIGURE 7 - ACTIVE·REGION SAFE OPERATING AREA
,\1,\
8
E
de
500
-".; i-1.Om,
300
r
o
100
,,,100"'
~ O. B
;: 700
0
'\
500",
'"
'\
TC - 25°C
- - - 80NDING WIRE LIMIT
- - - THERMAL LIMIT
SECOND BREAKDOWN LIMIT
~~
1'\
2N5679,2N5681
2NS680,2NS682
0
202.0
3.0
S.O
7.0
10
20
30
SO
70
100
~
""-
O. 6
;:::
'"
~
O. 2
0
200
VCE, COLLECTDR·EMITTER VOLTAGE IVOLTS)
40
""-
........
700
2000
1000
There are two limitations on the power handling ability of a
that must be observed for relIable operation; I.e., the tranSistor must
not be subjected to greater diSSipation than the curves indicate.
The data of Figure 7 IS based on T C '"" 2SoC; T J(pk) IS
variable depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% prOVIded TJlpk) ",.20o"C. TJlpk)
may be calculated from the data 10 Figure 6. At high case temperatures, thermal limitations Will reduce the power that can be
handled to values less than the limitations Imposed bV second
breakdown. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown
on Figure 7 may be found at any case temperature by using
the appropriate curve on Figure 8.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
SECONO
BREAKDOWN
DERATING
-
r---....
"" "'"
80
120
TC, CASE TEMPERATURE 10C)
tranSistor: average Junction temperature and second breakdown.
Safe operating area curves Indicate Ie . VeE limits of the transistor
4-200
..........
THE RMA'L'-DERATING
~ O.4
c
,
H
"'" ~.......
Z
0
0
500
...... ~
to
~
'\
300
FIGURE 8 - POWER DERATING
1.0
5.0 mi----+-.\
100
100
-
(ms)
2.0 k
~1.0 k
_
DUTY CYCLE, 0'" 11/12
I, TIME
'"
-
==
~-gf-~
1,,1'=
2
~
-
TJlpk) ~ TC - P(pk) ROJClt)
0.01
SINGLE PULSE
3
'"~
-
PULSE TRAIN SHOWN
READ TIME AT I]
:;;;...:-
=
...........
..........
.~
160
"'"
200
2N5679,2N5680,2N5681,2N5682
PNP
2N5679.2N5680
NPN
2N5681.2N5682
FIGURE 9 - DC CURRENT GAIN
200
3DO
I
t- vci: 210 V
Vc :210 V
z
200
:<
TJ!JC
'"
I-
~
~
I"
25°C
I
~ 50
~
w
>
IC: SOmA
O. 4
u
O. 2
~
3010
500 700 1.0 k
300
20
30
50 70 100
200 300
IC. COLLECTOR CURRENT ImA!
500 700 1.0 k
200mA
~ O. B
\
II
~
\
10
2.0
5.0
~
S
20
50
100
200
500
>
TJ: 25°C
-::::
VBElsat!@IC/IS: 10
00.1
0.5
-
1.0
1.0
---
10
20
5.0
lB. BASE CURRENT ImA!
FIGURE 11 - "ON" VOLTAGES
1.0
TJ: 25°C
-
..I-
6 VSElon!@VCE:2.0Iv
o. B
~
~
-
.........
__ f-"
B
1000 mA
\
O.2
lB. BASE CURRENT ImA!
1.0
500 mA
\
~
10
\ 200 mA
06
'"
I0 0.5
IC: 50 mA
~ O. 4
I~
\
~
'"~
,.~
Tp 250C
\
'"~
1000 mA
\500 mA
>
\
\
~
1\
\
O.8
Q
~
~
./'
~
FIGURE 10 - COLLECTOR SATURATION REGION
ti} 1.0
TJ: 25°C
~
~ 1.0
O.6
~,
50
30
50 70 100
200
IC. COLLECTOR CURRENT ImA!
;;;
~
""
11
-55°C
70
1
'"~
V
v
100
l5l!
1--1-
Q
;
I
20
I-- I---
Ji500C
U
-5~OC
30
-
IT]
VBEI~tI ~ IC/IBI: ld
~ 0 6 VBElon!@VCE - 2.0 V
-
.....
:::V
50
--
100
200
L....I.....
w
"'
;0
~ O. 4
>
4
O. 2
-
:>
O. 2
V
VCEI"t!@ ICIIB : 10
010
20
30
50
70
100
200
300
VCElsat! @IC/IB : 10
500 700 1.0 k
IC. COLLECTOR CURRENT ImA}
~O
20
30
50 70 100
200 300
IC. COLLECTOR CURRENT ImA!
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-201
500 700 1.0 k
•
2N5679,2N5680,2N5681,2N5682
NPN
2N5681.2N5682
PNP
2N5679.2N5680
FIGURE 12 - TEMPERATURE COEFFICIENTS
+1.0
+1.0
u
'APPLIES FOR IC/IB" hFE/S.O
"~
+0.5
I
~
'eVC FOR VCE("t)
15
-
'APPLIES FOR ICIIS "hFE/5.0
-S~'C). ISO.I~f-"
r-
5
-55°C to 150c C
'ev~ FO~ VCEl ..,)
0
u
~
•
-0.5
5
"
~ -1.0
-55°C to 1500 C
....
0
f-"
V
«
~ -1.5
550C to 150°C
S
0VB FOR VBE
'"~ -2.0
OVB FOR VBE )--
0
L
I
~
20
30
50 70 100
200 300
IC. COLLECTOR CURRENT (mA)
20
30
SO 70 100
200 300
IC. COLLECTOR CURRENT (rnA)
SOO 700 1.0 k
FIGURE 13- COLLECTOR CUTOFF REGION
10 S
104
VCE' 80 V
VCE'BOV
/
4
3
-2 510
500 700 1.0 k
-
I--
f-
~ 10
0-
a r~
FO WARO
~
10
~
100
-0 I
-02
100'C
I
./
2S'C
--REVERSE
./
2S'C
+0 I
/
~ 10 2
1-- REVERSE
10 +0 'I
/
w
2 - 100'C
/
TJ ' ISO'C
....z
TJ'ISO'C
:;;..;
/
3
-03
-0.4
I
10- -0.2
-liS
-0 1
FORWARD
+0.1
+0.2
+0.3
+0.4
+0 S
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VBE. BASE·EMITTER VOLTAGE (VOLTS)
FIGURE 14- BASE CUTOFF REGION
10 3
104
TJ -IS0'C
VCE' 80 V
TJ'IS0'C
3
2
VCE' 80 Vdc
'.
10 2
f--ioo'C
-100'C
-...
1
0f----2S'C
1
.........
-2S'C
I"-
10- I
100
--+REV RSE
FORWARD
10- 1
-0.1
+0.2
+0.1
-0.2
VBE. BASE·EMITTER VOLTAGE (VOLTS)
1==
10-2
-lI.2
-lI.3
REVERSE
-0.1
FORWARD
+D.l
VBE. BASE·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-202
+D.2
+0.3
2N5859
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
80
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Rating
IC
2.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
6.0
Watt
mWI"C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 79·02, STYLE 1
TO·39 (TO·205AD)
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
35
°C/W
Thermal Resistance, Junction to Ambient
ROJA
175
°C/W
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lc
(IE
=
=
=
10 .,.Ade, IC
(VCE
(VCE
Collector Cutoff Current
(VCB = 50 Vde, IE
(VCB = 50 Vde, IE
(VBE
=
10 mAde, IB
100 "Ade, IE
Collector Cutoff Current
Emitter Cutoff Current
=
(lC
=
50 Vdc, VBE(off)
50 Vdc, VBE(off)
5.0 Vde, IC
=
= 0)
0)
= 0)
= 2.0 Vdc)
= 2.0 Vdc, TA = 75°C)
= 0)
= 0, TA = 75°C)
= 0)
V(BR)CEO
40
-
Vdc
VjBR)CBO
80
-
Vdc
V(BR)EBO
6.0
-
Vdc
-
0.2
5.0
.,.Adc
-
0.25
5.0
.,.Adc
-
IE SO
-
0.1
.,.Ade
hFE
30
15
10
120
100
-
-
0.4
0.7
Vde
VBE(sat)
O.S
0.9
1.0
1.25
Vde
t,.
ICEX
ICBO
ON CHARACTERISTICS
= 500 mAde, VCE = 1.0 Vde)
= 1.0 Ade, VCE = 1.0 Vde)
= 1.0 Ade, VCE = 1.0 Vde, TA = -55°C)
Collector-Emitter Saturation Voltage (lc = 500 mAde, IB = 50 mAde)
(lc = 1.0 Ade, IB = 100 mAde)
Base-Emitter Saturation Voltage (lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
DC Current Gain
(lC
(lC
(lC
VCE(sat)
-
-
SMALL-SIGNAL CHARACTERISTICS
250
-
MHz
Ceb
-
7.0
pF
Ceb
-
60
pF
td
-
6.0
ns
Ir
-
30
ns
Storage Time
(VCC = 30 Vde, IC = 1.0 Ade,
IS1 = IB2 = 100 mAde) (Figures 9 and 11)
Is
-
35
ns
Fall Time
(VCC = 30 Vde, IC = 1.0 Ade,
ISl = IB2 = 100 mAde) (Figures 9 and 11)
tf
-
35
ns
Current-Gain -
Bandwidth Produel
Collector-Base Capacitance
Emitter-Base Capaeilanee
(VCB
(VEB
=
(lc
= 50
= 0.5 Vde,
IC
= 10 Vde, f =
= 0, f = 100 kHz)
= 0, f = 100 kHz)
mAde, VCE
10 Vde, IE
100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vde, VBE(off) = 2.0 Vde, IC
IS1 = 100 mAde) (Figures Sand 10)
=
1.0 Ade,
Rise Time
(VCC = 30 Vde, VBE(off) = 2.0 Vde, IC
IS1 = 100 mAde) (Figures Sand 10)
=
1.0 Ade,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-203
•
2N5859
ELECTRICAL CHARACTERISTICS (continued) (TA -- 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Turn·On Time
(Vee = 30 Vdc,.VBE(off) = 2.0 Vdc, Ie = 1.0 Adc,
IB1 = 100 mAde) (Figures 8 and 10)
Characteristic
ton
-
35
ns
Turn·Off Time
(Vee = 30 Vdc, Ie = 1.0 Adc,
IB1 = IB2 = 100 mAde) (Figures 9 and 11)
toff
-
60
ns
(1) Pulse Test: Pulse Width", 300
,",S,
Duty Cycle'" 2.0%.
FIGURE 1 - ACTIVE·REGION SAFE OPERATING AREA
•
2.0 k
1
I-
ill
de
700
300
200
must be observed for reliable operation; i.e., the transistor must not
"-
10 0
0
~
\
TJ " 200°C
- - - BONDING WIRE LIMITED
- - - THERMALLY LIMITED
@TC"250C
- - SECOND BREAKDOWN LlMITEO
PU LSE DUTY CYCLE .. 10
SECOND BREAKDOWN FOR de:
DO NOT OPERATE ABOVE THERMAL
LIMITATION FOR TIMES GREATER
THAN 1.0 SECOND.
o
8
transistor: junction temperature and second breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
loOms
"
~
10",
\
There are two limitations on the power handling ability of a
500
~
~
II~ol"S [)(
'1-,
1.0 k
0
0
be subjected to greater dissipation than the curves indicate.
The data of Figure 1 is based on T Jlpk) = 200°C; T C is variable
\
depending on conditions. Pulse curves are valid for duty cycles of
10% provided TJ{pk)S: 200°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
20
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
VCE. COLLECTOR·EMITTER VO LTAGE (VOLTS)
30
50
TYPICAL DC CHARACTERISTICS
FIGURE 3 - "ON" VOLTAGES
FIGURE 2 - DC CURRENT GAIN
400
14
z
r--- -
;;:
'"
~
80
0
60
<..>
~
-
25°C
VCE" 1.0 V
-"
-
25°C
in
S
0
r--..
100
i3
0
12
~J" i250C
200
I-
f--- TJ
_.-55 0C
40
~
10
08
;'"
V
~
w
06 !==""VSE(satl@ leils:: 10
0
.......
>
,; 04
........
--
02
i-VCE(sat)@lcIIS" 10
20
10
50
20
100
200
500
10
1000
50
20
~
w
'"
\
~
1\
06
1\
w
"'
~8
"
0.2
1000 mA
I I
r---
1.0
20
II
5.0
20
50
I---
:3
w
~
500mA
-
-10
~ -15
300 rnA
I - OVB FOR VBE{ .. 'I
.: -20
III1
10
l.-
+05 I--',VC FOR VCE(s,')
~ -0.5
B~OmA
",.....,
Ic"IOOmA
~
0
0.5
~
1\
\
0.4
0
>
'APPLIES FOR ICIIS
TJ" 25°C
S
"'"
>
500
+25
0
~
200
FIGURE 5 - TEMPERATURE COEFFICIENTS
FIGURE 4 - COLLECTOR SATURATION REGION
10
100
Ie. COLLECTOR CURRENT (mA)
IC. COLLECTOR CURRENT {mAl
-25
100
200
500
10
lB. BASE CURRENT (rnA)
20
30
50
100
200
300
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-204
500
1000
2N5859
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 6 - CURRENT-GAIN-BANDWIDTH PRODUCT
FIGURE 7 - CAPACITANCE
100
70
~ 500
~
t:;
5
~
........ '-""'
300
..........
/
"
~z
I
~
70
50
z
20
....
'"
;;: 100
~
30
u
;t
;3
VCP 10 Vdc
TJ = 250C
U
t.O
t-'~
~
w
u
;;;
Z
I,
/'"
:; 200
TJ 25°C
50
10
7.0
Cob
r---
--
5.0
4.0
6.0
10
40
20
60
100
200
3.0
0.1
400
0.5
0.2
~
;::
...... "'"
~
1' ....
10
5.0
2.0
10
20
VOB = 2 Vdc
VCC=30Vdc
100
50
-
3~tdC ~
....t-k::~
w
VCC!
td@VOB-OV
lJ II
";::
--
......
ts= IcllB = 20
30
t'---
20
~
k::~
I
I
IcllB = 10
i
r--....
..>s
10 ~
500
200
lJvd~
~J ~ 25°f I
/'
"
50
10
1000
20
30
50
100
200
300
500
1000
IC, COLLECTOR CURRENT (mAl
FIGURE 11 - TURN'()FF TIME TEST CIRCUIT
FIGURE 10 - TURN-ON TIME TEST CIRCUIT
Vih TO 50 OHM
OSCILLOSCOPE
Vin TO 50 OHM
t~n' V J L OSCILLOSCOPE
OV
4950
100
4950
Yin +21 V
~~'Wv-~o)
Vout TO 50 OHM
OSCILLOSCOPE
100
10%
+10.9V
Vin
If'" 1.0 ns
P.W." 1.01-'s
DUTY CYCLE", 2.0%
GENERATOR SOURCE IMPEDANCE
10%
- 2.0 V
= 50 n
100
100
Vout TO 50 OHM
OSCILLOSCOPE
100
t, '" 1.0 ns
P.W... 200 ns
DUTY CYCLE", 2.0%
GENERATOR SOURCE IMPEDANCE
100
IcllB -10
70
IC, COLLECTOR CURRENT (mAl
+10.9U
Vin
-2.0V------ 0
50
20
JcJ =
i"- tf@ICIlBi20
100
tr@VCC~10Vdc
20
10
200
ic/lBI= 16
Tr 25°C
50
!ii!
50
2.0
FIGURE 9 - TURN-OFF TIME
FIGURE 8 - TURN-ON TIME
200
]
1.0
VR, REVERSE VOLTAGE (VOLTSI
IC, COLLECTOR CURRENT (mAl
100
II
I
Ccb
=
10%
'"
~~~'"
ALL WAVEFORMS AND BIAS LEVELS MUST BE SET WITH UNIT IN CIRCUIT.
ALL WAVEFORMS AND BIAS LEVELS MUST BE SET WITH UNIT IN CIRCUIT.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-205
50 n
2N5861
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vde
Collector-Base Voltage
VCBO
100
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
Collector Current -
Continuous
IC
2.0
Ade
25°C
Po
1.0
6.0
Watt
mWfC
Total Device Dissipation @ T C ~ 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWfC
TJ, Tstg
-65 to +200
°c
~
Total Device Dissipation @ TA
Derate above 25°C
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS
SWITCHING TRANSISTOR
NPN SILICON
(TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
50
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
100
-
Vde
Emitter:Base Breakdown Voltage
(IE = 10 pAdc, IC ~ 0)
V(BR)EBO
6.0
-
Vdc
-
0.3
10
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 50 Vdc, VBE(off) ~ 2.0 Vdc)
(VCE = 50 Vde, VBE(off) ~ 2.0 Vdc, TA
Collector Cutoff Current
(VCB = 50 Vde, IE. = 0)
(VCB = 50 Vdc, IE = 0, TA
ICEX
= 75°C)
ICBO
=
+ 75°C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
pAdc
pAdc
0.3
10
-
0.1
25
10
100
pAdc
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 500 mAdc, VCE
(lc = 500 mAdc, VCE
=
=
-
hFE
1.0 Vdc)
1.0 Vdc, TA
= -55°C)
-
Collector-Emitter Saturation Voltage
(lC ~ 500 mAdc, IB ~ 50 mAdc)
VCElsat)
-
0.5
Vdc
Base-Emitter Saturation Voltage
(lC = 500 mAdc, IB = 50 mAdc)
VBElsat)
0.8
1.1
Vdc
f,-
200
-
MHz
Ccb
-
7.0
pF
Ceb
-
60
pF
ton
-
25
ns
8.0
ns
18
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
100 kHz)
Emitter-Base Capacitance
(VBE = 0.5 Vdc, IC ~ 0, f
=
100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
(VCC = 30 Vdc, VBE(off) = 2.0 Vdc,
IC = 500 mAdc, IBI = 50 mAde)
td
Rise Time
tr
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-206
2N5861
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Characteristic
Storage Time
Min
Symbol
(VCC = 30 Vdc, IC = 500 mAde,
181 = 182 = 50 mAde)
Turn-Off Time
ts
Fall Time
Max
Unit
60
ns
35
ns
35
ns
-
toff
tf
(1) Pulse Test: Pulse Width", 300 "'s, Duty Cycle'" 2.0%
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 2 - CAPACITANCE
FIGURE 1 - CURRENT·GAIN-BANDWIDTH PRODUCT
j:' 500
VCE ° 10 Vdc
~
~D
~
"
100
70
f'" 100 MHz
TJ ° 25°C
300
.--
'"'z"
;:\
'"
,/
~
w
u
z
e-
"""r--..
'"
~
~
10
r-- t-
Ccb
<.i
70
70
or
20
;'t
I
Z
r--...
30
o:;
;;: 100
<;>
•
_Ceb
..........
V
:; 200
TJ ° 25°C
50
5.0
=>
u
.!:'
3.0
0.1
50
40
10
6.0
20
40
100
60
200
400
02
05
'c, COLLECTOR CURRENT (mAl
100
50
w
'"
""'
20
......
;::
"
1"--,
10
Ir@VCCoIOVdc
VCC ° 30 Vdc
~ .-/
f"..-
td@VOB OV
VOS 2.0Vdc
VCC ° 30 Vdc
-w
>f'"
~
20
50
100
.........
10
200
50
TIOj5:C1
500
1000
ts@ICIlB
-, IC/IB
.
""" .....,
j
./
0
10
V ./
V
20
30
100
50
200
300
500
IC. COLLECTOR CURRENT (mAl
FIGURE 5 - TURN·ON TIME TEST CIRCUIT
+58 V
Vin to 50 Ohm
~,:V -=:J-~--o
- -l:....::;
OSCILLOSCOPE
10%
4950
-20 V
100
----1-'10%
50
tr~
Vout
90%
1.0 ns
PW. '" 200 ns
Duty Cycle ~ 2.0%
Generator Source Impedance = 50 n
Pulse Generator. EH1421 Tlmmg Umt and 1121 Pulse Dnver
Oscilloscope TektronIX 661 Sampling Scope
Vin dunng ton Interval must be +5 8 V
All waveforms and bias levels must be set with
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-207
20
10
r-....
/'
IC. COLLECTOR CURRENT (mAl
-20 V
100
VC~ ° 10 Uc
" 1'''
50
30
20
10
20
If@IC/lso 10
1/ IC/ls ° 20
70
>"
20
50
10
200
ICilS ° 10
TJ" 25°C
~
100
50
20
FIGURE 4 - TURN-OFF TIME
FIGURE 3 - TURN-ON TIME
200
10
VR. REVERSE VOLTAGE (VOLTSI
Unit In
Circuit
1000
2N5861
FIGURE 6 - TURN-OFF TIME TEST CIRCUIT
Vin to 50 Ohm
von+58V~
+30 V
OSCILLOSCOPE
- - - - - - -4.0 V
4950
4950
100
Vout to 50 Ohm
OSCI LLOSCOPE
50
1.0ns
P.W.;> 1.0",
tt~
•
V,ut--+--
Duty Cvcle "2.0%
Generator Source Impedance'" 50 n
Pulse Generator. EH1421 Timmg Unit and 1121 Pulse Driver
Oscilloscope' Tektronix 661 Sampling Scope
Vin dUring tott interval must be -4.0 V.
All waveforms and bias levels must be set with unit in circuit
FIGURE 8 - "ON" VOL TAGES
FIGURE 7 - DC CURRENT GAIN
200
z
to
~
50
~
13
'-'
~
25 0 C
-
70
f--
II I
TJ = 125'C
100
<1
in
~
~
1.0
2: 0.8
~
I:::::::::::::r-
w
r-....
I'..
'"
'~"
06 t-VSElsat!@ICIIB-lO
0
>
>- 04
I'..
I'
20
b--"
02
o
10
20
10
30
100
50
I--"
0
30
0
f - - TJ = 25'C
1.1
VCE = 1.0 Vde
-
-55°C
14
200
300
1000
500
r-VCElsat!@ICIlB
10
10
50
20
100
2UO
500
1000
IC, COLLECTOR CURRENT ImA!
IC, COLLECTOR CURRENT ImA!
FIGURE 9 - ACTIVE-REGION SAFE OPERATING AREA
20
1.0
-
"-
h
FIGURE 10 - TEMPERATURE COEFFICIENTS
10)J.s
de
+25
~
:;;
...
I
+2.0
'APPLIES FOR IC/IB < hFE/2
..§. +1 5
~
~
TJ = 200'C
1 - - - Second Breakdown limited
- - Bonding Wire Limited
o
'-'
cO 0 05
ff,
00 3
0.0 2
30
~ +1.0
'" f'
~
o
~
V
+0.5 i--'OVC FOR VCEI.. t!
8
~hermal Lom'''ti,n,@Tc = 25'C
w
~
Pulse Outy Cycle ~ 10%
Applicable To Rated BVCEO
-05
f--
~ -1.0
4.0
60S 0
10
20
30
40
60
~ -1.5
~
t--'VB FOR VBE
--
I-
f--
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS!
~ -2.0
-2.5
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
10
20
30
50
100
200
300
IC, COLLECTOR CURRENT ImA!
be subjected to greater dissipation than the curves indicate.
The data of Figure 9 is based on T Jlpk! = 200°C; TC i, variable
depending on conditions. Pulse curves are valid for duty cycles of
10% provided TJlpk)';; 200°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by secondary breakdown.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-208
500
1000
2N6430
2N6431
CASE 22-03, STYLE 1
TO-1S (TO-206AA)
MAXIMUM RATINGS
3 Collector
Rating
Symbol
ZN6430
ZN6431
Unit
Collector-Emitter Voltage
VCEO
200
300
Vdc
Collector-Base Voltage
VCBO
200
300
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
50
mA
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
500
2.86
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ. Tstg
ELECTRICAL CHARACTERISTICS (TA
=
mW
1.8
10.3
mWrC
-65 to +200
"C
":~
3
1 Emitter
GENERAL PURPOSE
TRANSISTOR
Watts
NPNSILICON
25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 0.1 mAde, IE = 0)
Vdc
V(BR)CEO
200
300
-
200
300
-
6.0
-
-
0.1
0.1
25
40
50
200
VCE(sat)
-
0.5
Vdc
VBE(sat)
-
0.9
Vde
50
500
MHz
-
4.0
pF
2N6430
2N6431
Vdc
V(BR)CBO
2N6430
2N6431
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 160 Vde)
(VCB = 200 Vde)
ICBO
2N6430
2N6431
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
Vde
iJAde
0.1
iJAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE
(lC = 10 mAde, VCE
(lC = 30 mAde, VCE
hFE
= 10 Vdc)
= 10 Vdc)
= 10 Vde)
Collector-Emitter Saturation Voltage
(IC
=
20 mAde, IB
=
-
-
2.0 mAde)
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
Ccb
=
1.0 MHz)
(1) Pulse Test: Pulse Width", 300 ",", Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-209
•
2N6432
2N6433
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
•
i
r
Symbol
2N6432
2N6433
Collector-Emitter Voltage
VCEO
200
300
Vde
Collector-Base Voltage
VCBO
200
300
Vde
Emitter-Base Voltage
VEBO
5.0
IC
500
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
500
2.86
mW
mWFC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.8
10.3
Watts
mWFC
TJ, Tstg
-65 to +200
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
Unit
Vde
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
--
Refer to 2N3743 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
200
300
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
Vde
V(BR)CEO
2N6432
2N6433
Vde
V(BR)CBO
2N6432
2N6433
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 160 Vde)
(VCB = 200 Vde)
ICBO
2N6432
2N6433
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
-
200
300
-
5.0
-
-
-
Vde
!lAde
0.25
0.25
0.1
!lAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(IC = 30 mAde, VCE = 10 Vde)
hFE
-
25
40
30
150
-
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
VCE(s_t)
-
0.5
Vde
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
VBE(sat)
-
0.9
Vdc
50
500
MHz
-
6.0
pF
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
=
Ceb
1.0 MHz)
(1) Pulse Test: Pulse Width", 300 ,.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-210
BCI07,A,B,C
BCI08,A,B,C
BCI09,A,B,C
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
107 108 109
Unit
Vdc
Collector-Emitter Voltage
VCEO
45
25
25
Collector-Base Voltage
VCBO
50
30
30
Vdc
Emitter-Base Voltage
VEBO
6
5
5
Vdc
Collector Current - Continuous
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3 Collector
IC
0.2
Amp
Total Device Dissipation '" TA
Derate above 25°C
= 25°C
PD
0.6
2.28
Watt
mW;oC
Total Device DIssipation I" TC
TC
Derate above 25°C
= 25°C
= 100°C
PD
1
Watt
6.67
mW/oC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
":~
•
1 Emitter
TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
15
4
15
4
nA
OFF CHARACTERISTICS
Collector Base leakage Current
(IE = 0, VCB = 45 V)
(IE = 0, VCB = 45 V, TAmb = 125°C)
(IE = 0, VCB = 25 V)
(IE = 0, VCB = 25 V, TAmb = 125°C)
Emitter Base Breakdown Voltage
(IE = 10 ~A, IC = 0)
ICBO
BC107
BC107
BCl 08/1 09
BCl 08/1 09
V
V(BR)EBO
BC107
BCl 08/1 09
Collector Emitter Breakdown· Voltage
(IC = 2 rnA, IE = 0)
~A
nA
flA
6
5
V
V(BR)CEO
BC107
BCl 08/1 09
45
25
ON CHARACTERISTICS
DC Current gain
(VCE = 5 V, IC
(VCE
=5
V, IC
=2
= 10
hFE
rnA)
~A)
BC107
BC108
BC109
110
110
200
450
800
800
A group
B group
C group
110
200
420
220
450
800
B group
C group
40
100
Base Emitter Saturation Voltage
(lc
(lc
V
VBE(sat)
= 10 rnA, IB = 0.5 rnA)
= 100 rnA, IB = 5 rnA)
0.7
1.0
Collector Emitter Saturation Voltage
(lC = 10 rnA, IB = 0.5 rnA)
(lc = 100 rnA, IB = 5 rnA)
VCE(sat)
Base Emitter on Voltage
(IC = 2 rnA, VCE = 5 V)
(lc = 10 rnA, VCE = 5 V)
VBE(on)
0.83
1.05
V
0.25
0.60
V
0.70
0.77
0.55
Collector Knee Voltage
(lC = 10 rnA, IB = the value lor which IC
= 11
rnA at VCE
= 1 V)
V
VCE(K)
0.4
0.6
DYNAMIC CHARACTERISTICS
Transition Frequency
(IC = 10 rnA, I = 100 MHz, VCE
Noise Figure
(VCE = 5 V, IC = 0.2 rnA, Rg
F = 30 Hz to 15 kHz
F = 1 kHz, t:.F = 200 Hz
=5
MHz
IT
V)
150
300
dB
NF
=2
KQ)
4
4
10
BC109
BC109
BC107/108
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-211
BC107,A,B,C, BC108,A,B,C, BC109,A,B,C
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Output Capacitance
(VCB = 10 V. f = 1 MHz)
h21e Parameters
(VCE = 5 V. IC = 2 rnA. f
•
Min
Typ
Unit
Max
pF
Cobo
4.5
h21e
= 1 kHz)
BC107/10B
BC109
125
240
500
900
A group
B group
C 9rouP
125
240
450
260
500
900
1.6
3.2
6.0
4.5
8.5
15
h 11 e Parameters
(VCE = 5 V. IC = 2 rnA. f
= 1 kHz)
A group
B group
C group
h22e Parameters
(VCE = 5 V. IC = 2 rnA. f
= 1 kHz)
A group
B group
C group
KQ
h11e
I'hos
h22e
30
60
110
FIGURE 1 - EMITTER-BASE CAPACITANCE
COLLECTOR-BASE CAPACITANCE
~ 1.
i
..
OS
......
10
......
B
"
"
_
2
-lit'
~
COB
10.
10'
VCBO. COLLECTOR·BASE VOLTAGE (VOLTS)
VEBO. COLLECTOR· EMITTER VOLTAGE (VOLTS)
FIGURE 2 -
CU!~RENT
GAIN - BANDWIDTH PRODUCT
FIGURE 3 - TOTAL PERMISSIBLE POWER DISSIPATION
I
I
400
I
.......
10V
........
~I\
300
~ 0.75
~~
"1-
2011
~
100
lit'
~V
""C-2V
II
II
10'
10'
IC. COLLECTOR CURRENT (mA)
J 0.50
T - 25 'c
'-IOOMH,
0.25
I LJ
I II
Rthje.
........
--
........
r-- r--
--
.........
100
10'
TEMPERATURE ('C)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-212
"""I--
~Ihjtmb. """
~
200
BCl40,lO,16
BC141,lO,16
MAXIMUM RATINGS
Symbol
BC
140
BC
141
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCBO
BO
100
Vdc
Emitter-Base Voltage
VEBO
7
Vdc
Adc
Rating
Collector Current - Continuous
CASE 79·02, STYLE 1
TO·39 (TO·205AD)
3 Collector
IC
1
Total Device Dissipation@ TA
Derate above 25°C
= 25°C
Po
O.B
4.6
Watt
mW/oC
Total Device Dissipation@ TC
Derate above 25°C
= 25°C
Po
3.7
20
Watt
mW/oC
TJ, T stg
-65 to +200
°C
Operating and Storage Junction
Temperature Range
~~."
"
•
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RHJC
35
°C/W
Thermal Resistance, Junction to Ambient
RHJA
200
°C/W
NPN SILICON
Refer to 2N3019 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
100
100
nA
!lA
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCE = 60 V)
TA
Collector-Emitter Breakdown Voltage
(ICES = 100 !lA, IE = 0)
BC140
BC141
Collector-Emitter Breakdown Voltage(l)
(lc = 30 rnA, IB = 0)
ICES
= 150°C
V(BR)CES
V
BO
100
V
V(BR)CEO
BC140
BC141
40
60
Emitter-Base Breakdown Voltage
(IE = 100 !lA, IC = 0)
V
V(BR)EBO
7
ON CHARACTERISTICS
DC Current Gain(l)
(IC = 100 rnA, VCE
hFE
= 1 V)
40
63
100
for BC140, 141
for BC140, 141 Group 10
for BC140, 141 Group 16
Collector-Emitter Saturation Voltage(l)
(lc = 1 A, IB = 0.1 A)
400
160
250
VCE(sat)
V
1
Base-Emitter Voltage (1)
(Ie = 1 A, VCE = 1 V)
2
VBE(on)
V
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
(IC = 50 rnA, VCE = 10 V, f
Input Capacitance
(VEB = 0,5 V, IC
Capacitance
(IE = 0, VCB
fT
= 20
Cib
= 0, f = 1 MHz
Cob
= 10 V, f = 1 MHz)
Turn On Time
(Ie = 150 rnA, IBI
= 7.5
Turn Off Time
(IC = 150 rnA, IBI
= IB2 =
MHz
50
MHz)
ton
rnA)
toff
7.5 rnA)
(1) Pulsed: Pulse Duration = 300 !lS, Duty Cycle = 1%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-213
pF
BO
25
250
B50
pF
ns
ns
BCI60,-6,IO,16
BCI61,-6,IO,16
. MAXIMUM RATINGS
Rating
Symbol
BC
161
60
Vdc
60
Vdc
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
40
Emitter-Base Voltage
VEBO
5
Vdc
IC
1
Adc
Collector Current - Continuous
•
Unit
BC
160
CASE 79-02. STYLE 1
TO-39 (TO-205AD)
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
0.8
4.6
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
3.7
20
Watt
mW/oC
TJ. T stg
-65 to -t200
°C
Symbol
Max
Unit
RYJC
35
°C/W
R&JA
200
°C/W
Operating and Storage Junction
Temperature Range
!/!
3
217\
Bas~
2 1
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
I.
3 Collector
Characteristic
LThermal Resistance, Junction to Case
I Thermal Resistance. Junction to Ambient
PNP SILICON
Refer to 2N4033 for graphs.
I
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
-100
-100
-100
-100
nA
OFF CHARACTERISTICS
Collector Cutoff Current
IE = O. VCES = -40 V lor BC160
VCES = -60VlorBC161
VCES = -40 V lor BC160 TAmb = 150°C
VCES = - 60 V lor BC161 TAmb = 150°C
Collector Emitter Breakdown Voltage
IC = -100 ~A. IE = 0
Collector-Emitter Breakdown Voltage(l)
IC = -10 mAo IB = 0
ICES
V(BR)CES
~A
V
-40
- 60
lor BC160
lor BC161
V(BR)CEO
V
-40
-60
lor BC160
lor BC161
Emlttor-Base Breakdown Voltage
IE = -100 ~A. IC = 0
V(BR)EBO
V
-5
ON CHARACTERISTICS
DC Current Gain(l)
IC = -100 mAo VCE = -1 V
lor BC160. BC161
lor BC160. BC161 Group 6
lor BC160. BC161 Group 10
lorBC160.BC161 Group 16
hFE
40
40
63
100
Collector-Emitter Saturation Voltage(l)
(IC = -1 A. IB = -0.1 A)
VCE(sat)
Base-Emitter Voltage(l)
(IC = -1 A. VCE = -1 V)
VBE(on)
400
100
160
250
V
-1
V
-1.7
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
(lC = -50 mAo VCE = -10 V. I = 20 MHz
fT
Input Capacitance
(VEB = -10 V. 1= 1 MHz)
Cib
Cobo
pF
30
Ton
= 300
ns
500
~A)
Turn Off Time
(lC = -100 mAo IBl = IB2 = -5
(1) Pulsed: Pulse Duration
pF
180
Output Capacitance
(VCB = -10 V. IE = O. I = 1 MHz)
Turn On Time
(lc = -100 mA.IBl = -5
MHz
50
~s.
Toff
~A)
Duty Cycle
ns
650
= 1%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-214
BC177,A,B,C
BC178,A,B,C
BC179,A,B,C
MAXIMUM RATINGS
Rating
Symbol
BC
BC
BC
Unit
177 178 179
Collector-Emitter Voltage
VCEO
45
25
20
Vdc
Collector-Emitter Voltage
VCES
50
30
25
Vdc
Collector-Base Voltage
VCBO
50
30
25
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
IC
0.2
Amp
Collector Current - Continuous
Total Device Dissipation @T A
~
25°C
Po
0.6
2.28
Watt
mW/oC
~
25°C
100°C
Po
1
Watt
6.67
mW;oC
TJ, T stg
-65 to +200
°c
Derate above 25°C
Total Device Dissipation @TC
TC
Derate above 25°C
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
~
Operating and Storage Junction
Temperature Range
,/I ~()'~'
2
1
•
1 Emitter
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
PNPSlllCON
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
100
4
nA
OFF CHARACTERISTICS
Collector Emitter Leakage Current
(VCE ~ 20 V, IE ~ 0)
(VCE ~ 20 V, IE ~ 0, TAmb ~ 125°C)
ICES
~A
Collector Base Breakdown Voltage
(IC ~ 10 ~A)
BCl77
BC178
BC17S
V(BR)CBO
50
30
25
V
Collector Emitter Breakdown Voltage
(IC ~ 2 rnA, IE ~ 0)
BCl77
BC178
BC17S
V(BR)CEO
45
25
20
V
V(BR)EBO
5
V
hFE
120
120
lBO
120
180
380
Emitter Base Breakdown Voltage
(IE ~ 10 ~A, IC ~ 0)
ON CHARACTERISTICS
DC Current Gain
(IC ~ 2 rnA, VCE
~
BCl77
BC178
BC17S
A Group
B Group
C Group
5 V)
Collector Emitter Saturation Voltage
(IC ~ 10 rnA, IB ~ 0.5 rnA)
(IC ~ 100 rnA, IB ~ 5 rnA)
VCE(sat)
Base Emitter Saturation Voltage
(IC ~ 10 rnA, IB ~ 0.5 rnA)
(IC ~ 100 rnA. IB ~ 5 rnA)
VBE(sat)
Base Emitter on Voltage
(IC ~ 2 rnA, VCE ~ 5 V)
VBE(on)
460
800
SOD
220
460
800
0.2
0.6
V
0.7
0.9
0.8
0.75
0.6
Collector Knee Voltage
(IC ~ 10 rnA, IB ~ the value lor which
(lc ~ 11 rnA, at VCE ~ lV)
V
VCE(K)
0.4
0.6
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
(VCE ~ 5 V, IC ~ 10 rnA, I
IT
~
Noise Figure
(VCE ~ 5 V, IC ~ 0.2 rnA, Rg
F ~ 30 Hz to 15 kHz
F ~ 1 kHz, F ~ 200 Hz
MHz
200
50 MHz)
300
NF
~
dB
2 KQ)
4
4
10
Be17S
BC179
BCl77/178
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-215
BC177,A,B,C,VI, BC178,A,B,C,VI, BC179,A,B,C,VI
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Characteristic
Output Capacitance
(VCB = 10 V, f = 1 MHz)
•
Min
h21e
125
125
240
125
240
450
500
900
900
260
500
900
1.6
3.2
6.0
4.5
8.5
15.0
Typ
3.5
h21 e Parameters
(VCE = 5 V, IC = 2 rnA, f
= 1 kHz)
h 11 e Parameters
(VCE = 5 V, IC = 2 rnA, f
= 1 kHz)
A Group
B Group
C Group
h22e Parameters
(VGE = 5 V, IC = 2 rnA, f
= 1 kHz)
A Group
B Group
C Group
BC177
BC17B
BC179
A Group
B Group
C Group
Max
Symbol
Cobo
4
hlle
KQ
h22e
~mhos
30
60
110
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-216
Unit
of
BC394
BC393
PNP
~.()'''.' ~~'-'
MAXIMUM RATINGS
Rating
Symbol
BC
BC
Unit
393
394
Collector-Emitter Voltage
VCEO
180
180
Vdc
Collector-Base Voltage
VCBO
180
180
Vdc
Emitter-Base Voltage
VEBO
6
Collector Curren·t - Continuous
1 Emitter
0.5
Amp
0.4
2.66
Watt
mW/oC
= 25°C
PD
Total Device Dissipation @TC
TC
Derate above 25°C
= 25°C
= 100°C
PD
TJ, T stg
1 Emitter
CASE 22-03, STYLE 1
TO-18 (TO-20SAA)
Vdc
IC
Total Device Dissipation @TA
Derate above 25°C
Operating and Storage Junction
Temperature Range
6
NPN
1.5
Watt
10.0
mW/oC
-65 to +200
°c
THERMAL CHARACTERISTICS
Characteristic
HIGH VOLTAGE TRANSISTOR
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted. I
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mA, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 f'Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 f'Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 100 V, IE = 0)
Vdc
180
Vdc
180
Vdc
6
nA
ICBO
50
Collector-Emitter Cutofl
(VCE = 100 V, IB = 0) (TAmb
f'A
ICEO
= 150°C)
50
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 10 mA, VCE
hFE
= 10 V)
50
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 1 mAdc)
VBE(sat)
100
Vdc
0.15
0.3
0.7
0.9
50
110
200
-
3.5
7e
-
75
--
-
100
--
--
400
--
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, I
= 20
Output Capacitance
(IE = 0, VCB = 20 Vdc, I
= 1 MHz)
Input Capacitance
(lc = 0, VEB = 0.5 Vdc, I
= 1 MHz)
Turn-On Time
(IB1 = 10 mA, IC
= 50
Turn-Off Time
(IB2 = 10 mAdc, IC
mAdc, VCC
= 50
Cobo
Cib
ton
= 100 Vdc))
mAdc, VCC
MHz
IT
MHzl
toll
= 100 Vdc))
pF
pF
• Pulse Test: Pulse Wldth:5 300 f'S, Duty Cycle:5 2%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-217
ns
ns
•
1IC:"!iIl,-lfll,lfll I, IlC,lC
1IC:"!i!t,-lfll,lflll,llC,lC
MAXIMUM RATINGS
Rating
•
Symbol
BCY
BCY
Unit
58
59
Collector-Emitter Voltage
VCEO
32
45
Vdc
Collector-Emitter Voltage
(RBE = 10 Ohms)
VCES
32
45
Vdc
Emitter-Base Voltage
CASE 22-03, STYLE 1
TO-18 (TO-20SAA)
VEBO
7
Vdc
Collector Current - Continuous
IC
0.2
Amp
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
0.6
2.28
Watt
mW/oC
Total Device Dissipation @TC = 25°C
TC = 100°C
Derate above 25°C
PD
1
Watt
6.67
mW/oC
TJ, T stg
-65 to +200
°c
I
Symbol
Max
Unit
RHJC
150
°C/W
I
RHJA
450
°C/W
Operating and Storage Junction
Temperature Range
/I
3
2
THERMAL CHARACTERISTICS
1
1 Emitter
TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
~~'~'
I
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA ='25°C unless otherwise noted.)
I
Characteristic
I
Symbol
Min
BCY58
BCY59
V(BR)CEO
32
45
all
V(BR)EBO
Type
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IC = 0)
Emitter-Base 8reakdown Voltage
(IE = l~Adc, IC = 0)
Collector
(VCE =
(VCE =
(VCE =
(VCE =
(VCE =
(VCE =
Vdc
Vdc
7
Cutoff Current
32 V)
45 V)
32 V, TA = 100°C, VBE = 0.2 V)
45 V, TA = 100°C, V8E = 0.2 V)
32 V, TA = 150°)
45 V, TA = 150°)
Emitter Base Cutoff Current
(VEB = 5 V)
nAdc
8CY58
BCY59
BCY58
8CY59
BCY58
BCY59
ICES
all
lEBO
0.2
0.2
ICEX
0.2
0.5
ICES
10
10
20
20
10
10
~Adc
~Adc
nAdc
10
ON CHARACTERISTICS
DC Current Gain
(IC = 10 ~Adc, VCE = 5 Vdc)
hFE
BCY59-VII,8CY58-VII
BCY59-VIII, BCY58-VIII
8CY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII,8CY58-VII
BCY59-VIII, BCY58-VIII
8CY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
8CY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
(Ie = 2 mAde, VCE = 5 Vdc)
(IC = 10 mAde, VCE = 1 Vdc)
(lc = 100 mAde, VCE = 1 Vdc)
Collector-Emitter Saturation Voltage
(IC = 100 mAde, IB = 2.5 mAde)
(lc = 10 mAde, IB = 0.25 mAl
Base-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.25 mAl
(Ie = 100 mA, IS = 2.5 mAl
Base-Emitter on Voltage
(lc = 2 mAde, VCE = 5 Vdc)
20
40
100
120
180
250
380
80
120
160
240
40
45
60
60
145
220
300
170
250
350
500
190
260
380
550
400
630
1000
0.15
0.05
0.30
0.12
0.70
0.35
0.6
0.75
0.70
0.90
0.85
1.2
0.55
0.62
0.70
220
310
460
630
Vdc
VCE(sat)
all
Vdc
VSE(sat)
all
Vdc
VBE(on)
all
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-218
BCY58,-VII, VIII,IX,X, BCY59,-VII, VIII,IX,X
I
ELECTRICAL CHARACTERISTI';S (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
DYNAMIC CHARACTERISTICS
Type
I
Symbol
I
Min
Typ
125
200
Max
Unit
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(IC = 10 mAdc, VCE = 5 V, f = 100 MHz)
all
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1 MHz)
all
Input Capacitance
(VBE = 0.5 V, IC = 0, f = 1 MHz)
all
Small Signal Current Gain
(lc = 2 mAdc, VCE = 5 Vdc, f = 1 kHz)
Output Admittance
(IC = 2 mAdc, VCE = 5 Vdc, f = 1 kHz)
Input Impedance
(lc = 2 mAdc, VCE = 5 Vdc, f = 1 kHz)
Voltage Feedback Ratio
(lc = 2 mAdc, VCE = 5 Vdc, f = kHz)
Noise Figure
(lC = 0.2 mAdc, VCE = 5 Vdc,
RS = 2 Kohms, f = 1 kHz)
MHz
fT
pF
Cob
3.5
6
8
15
200
260
330
520
250
350
500
700
pF
Cib
BCY58-VII. BCY59-VII
BCY58-VIII. BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
hfe
(h21e)
125
175
250
350
~mhos
hoe
(h22e)
hie
(hlle)
30
50
60
100
Kohms
1.6
2.5
3.2
4.5
h re
(h12e)
4.5
6
8.5
12
Xl0
1.5
2
2
3
dB
NF
all
2
6
SWITCHING CHARACTERISTICS
Id
tr
ton
35
50
85
150
• See test circuit.
ts
tf
toff
400
80
480
800
IC = 100 mA, IBl = 10 mA, IB2 = 10 mA
VBB = 5 V, Rl = 500 a, R2 = 700 a
RL = 98 ohms
td
tr
Ion
5
50
55
150
ts
tf
toff
250
200
450
800
IC = 10 mA, IBl = 1 mA, IB2 = 1 mA
VBB = 3.6 V, Rl = R2 = 5 Ka_
RL = 990 ohms
• See test circuit.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-219
nS
nS
4
•
BCY58,-VII,VIII,IX,X, BCY59,-VII,VIII,IX,X
TEST CIRCUIT
+Vss
-10V(VCCI
to oscIlloscope
•
t,
VCE (satilC/IB - 40
25 ·C
I II
I
1/
-55·C
~
./
100
---f--
0.51--11--1-+
V
~
0.4-1--
0
10-'
10'
10'
FIGURE 8 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
FIGURE 7 - INPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
10 , -
10'
~r-I--
IB
-VCE =5 V
102
10'
100
IC. COLLECTOR CURRENT (rnA)
IC. COLLECTOR CURRENT (rnA)
25pA
r
~
/
1/
~
IB = 20pA
r
--
--
-.
~.
1---
_.
I
IS = 15pA
::>
u
w
~
4-U--------I~_-4-~_-~+-H~...rw"T
+-<
r - f - -·1-H-H-Ijl----r-
1/
/
O. 1
>
~
-T_,
OSr-r--~-~KI~·-1--
r - r-
~
-
_-+-+-+-+-l+\jl--__ ._ _
10
......
/
,
!#
-
r
f-~--:-- f---
--
~
100
0.7
06
0.5
O.S
v-
'-
I
i
1
FIGURE 10 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
I
35 pA
I
...--
If
It:
100
I
r--
3pA
/"'"
0
4pA
5pA
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
FIGURE 9 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
Lr
f-;- - -'"-'-'
IB
09
VBE. BASE·EMITTERVOLTAGE (VOLTS)
1000
I
IB = IO~A
--
2.5pA
2pA
I
15pA
1 pA
I
0.5p~
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-221
II
BCY58,·VII,VIII,IX,X, BCY59,·VII,VIII,IX,X
FIGURE 11 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
100
0.35~
./
V
. /V
11'-- I, I
0.30 rnA
. / 025 rnA --i-----t---
r. ~ V
--
FIGURE 12 - EMITTER-BASE CAPACITANCE
COLLECTOR-BASE CAPACITANCE
~
=
U.~O rnA
j~
,
V
~
""~
0.10 mA
•
---t-
- - - f---
14
8'"
i'.
"
to
is
r-..
"
0 05 rnA
1
0
I
10
2
-lit'
20
~-
-
--
COB
10 1
100
10'
VCBO. COLLEClQR·BASE VOLTAGE (VOLTS)
VEBO. COLLECTOR·EMITTER VOLTAGE (VOLTS)
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 14 - TOTAL PERMISSIBLE POWER
DISSIPATION (BCY58/BCY59)
FIGURE 13 - CURRENT GAIN - BANDWIDTH PRODUCT
I
I
400
I
10V
~t--
300
........
~ 0.7 5
V~j\
I
200
-
I
I
Uil~
~ If'
100
~rr
0
10-'
lili
'1i -'"
k:::'y
VC:2 V
Ii
II II
111 Ii
10'
0.50
t::---,
T: 25 °C
f:IOOMHz
0.25
! II
I Illi
Rth I case
"
.,
,r
r-- r--
.........
~
"""::::t::::~
l - t-- Rth I amb.~
0
10'
100
Ie. COLLECTOR CURRENT (rnA)
lEMPERATURE (,e)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-222
200
BCY70
BCY71
BCY72
MAXIMUM RATINGS
Rating
Symbol
BCY BCY BCY
70 71 72
Unit
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Collector-Emitter Voltage
VCEO
40
45
25
Vdc
Collector-Base Voltage
VCBO
50
45
25
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current - Continuous
IC
0.2
Amp
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
360
2.06
mWatt
mW/oC
Total Device Dissipation @TC = 25°C
TC = 1000 C
Derate above 25°C
PD
0.6
mWatt
4.0
-65to+200
mW/oC
Operating and Storage Junction
Temperature Range
TJ, Tstg
•
°c
TRANSISTOR
THERMAL CHARACTERISTICS
PNPSILICON
Characteristic
Thermal Resistance, Junction to Case
Refer to 2N3798 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(lc = 2 mA, IB = 0)
Collector Base
(IE = 0, VCB
(IE = 0, VCB
(IE = 0, VCB
Vdc
V(BR)CEO
BCY70
BCY71
BCY72
40
45
25
Leakage Current
ICBO
= 50 V)
= 45 V)
= 25 V)
BCY70
BCY71
BCY72
0.5
0.5
0.5
(IE = 0, VCB = 40 V, TAmb = 100 0 C)
(IE = 0, VCB = 40 V, TAmb = 100 0 C)
(IE = 0, VCB = 20 V, TAmb = 100°C)
BCY70
BCY71
BCY72
2
2
2
(IE = 0, VCB = 40 V)
(IE = 0, VCB = 40 V)
(IE = 0, VCB = 20 V)
BCY70
BCY71
BCY72
10
50
50
Emitter Base Leakage Current
(VEB = 5 V, IC = 0)
(VEB = 4 V, IC = 0)
(VEB = 4 V, IC = 0, TAmb = 100 0 C)
lEBO
Collector Emitter Leakage Current
(VCE = 50 V, VBE = 3 V)
'CEX
0.5
10
2
~A
nA
~A
nA
~A
nA
20
BCY70
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 V, IC = 1
°
HFE
~A)
BCY71
40
BCY70
BCY71
40
80
(VCE = 1 V, IC = 1 mAl
BCY70
BCY71
BCY72
45
gO
40
(VCE = 1 V, IC = 10 mAl
BCY70
BCY71
BCY72
50
100
50
(VCE = 1 V, IC = 100
~A)
15
BCY70
(VCE = 1 V, IC = 50 mAl
Base Emitter Saturation Voltage
(IC = 50 rnA, IB = 5 rnA)
(IC = 10 mA, IB = 1 rnA)
600
VBE(sat)
BCY70/71
BCY70/71
V
0.6
Collector Emitter. Saturation Voltage
(lc = 50 rnA, IB = 5 rnA)
(lc = 10 rnA. IB = 1 rnA)
1.2
0.9
VCE(sat)
V
0.50
0.25
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-223
BCY70, BCY71, BCY72
I
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
I
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Transition Frequency
All types
(IC = 10 rnA. f = 100 MHz. VCE = 20 V)
(lc = 100 I1A. f = 10.7 MHz. VCE = 20 V) BCY71 only
IT
Noise Figure
(VCE = 5 V. IC
NF
= 100 I1A. Rg = 2 KQ.
Switching Times
(IC = 10 rnA. IBI
•
h parameters
(VCE = 10 V. IC
dB
30 to 15 kHz at - 3 dB points)
BCY70/72
BCY71
6
2
ns
= IB2 = 1 rnA)
65
ton
toff
Id
Ir
ts
tf
BCY70/72
BCY70/72
BCY70/72
BCY70/72
BCY70/72
BCY70/72
= 1 rnA. f = 1 kHz)
BCY71
h12e
h21e
h22e
hlle
Common Base Output Capacitance
(VCB = 10 V. IE = O. f = 1 MHz)
Cob
Input Capacitance
(VBE = 1 V. IC = O. f
Cib
=
MHz
250
15
420
35
35
350
80
100
10
2
20 X 10-'
400
60
12
-
-
I1 s
KQ
pF
6
pF
8
1 MHz
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-224
ElC:"~II,-"II,"III,I)(,)(
ElC:"~!t,-"II,"III,I)(,)(
MAXIMUM RATINGS
Rating
Symbol
BCY
BCY
78
79
Unit
CASE 22-03. STYLE 1
TO-1S (TO-206AAj
Collector-Emitter Voltage
VCEO
32
45
Vdc
Collector-Emitter Voltage
(RBE = 10 Ohms)
VCES
32
45
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
IC
0.2
Amp
Po
0.6
2.28
Watt
mW/oC
Po
1
Watt
6.67
mW/oC
TJ, T stg
-65to+200
°c
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Total Device Dissipation @TC = 25°C
TC = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
1Jl
~./3\'3(1 ~
•
1 Emitter
THERMAL CHARACTERISTICS
TRANSISTOR
Characteristic
PNPSILICON
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
I
Symbol
Min
BCY78
BCY79
V(BR)CEO
32
45
all
V(BR)EBO
Type
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAde, IC = 0)
Emitter-Base Breakdown Voltage
(IE = 2 I'Adc, IC = 0)
Collector Cutoff Current
(VCE = 32 V)
(VCE = 45 V)
(VCE = 32 V, TA = 100°C, VBE
(VCE = 45 V, TA = 100°C, VBE
(VCE = 25 V, TA = 150°)
(VCE = 35 V, TA = 150°)
= 0.2 V)
= 0.2 V)
= 2 mAde, VCE = 5 Vde)
(lc
= 10 mAde, VCE = 1 Vdc)
(lC
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
all
0.2
0.2
ICES
ICEX
0.2
0.5
ICES
100
100
20
20
10
10
nA
I'Adc
I'Ade
nA
lEBO
20
hFE
= 5 Vdc)
(lc
Vde
5
Emitter Base Cutoff Current
(VEB = 4 V)
ON CHARACTERISTICS
DC Current Gain
(lc = 10 I'Adc, VCE
Vde
BCY79-VII, BCY7B-VII
BCY79-VIII, BCY7B-VIII
BCY79-IX, BCY7B-IX
BCY79-X, BCY7B-X
BCY79-VII, BCY78-VII
BCY79-VIII, BCY78-VIII
BCY79-IX, BCY78-IX
BCY79-X, BCY78-X
BCY79-VII, BCY78-VII
BCY79-VIII, BCY78-VIII
BCY79-IX, BCY7B-IX
BCY79-X, BCY78-X
BCY79-VII, BCY7B-VII
BCY79-VIII, BCY78-VIII
BCY79-IX, BCY78-IX
BCY79-X, BCY78-X
= 100 mAde, VCE = 1 Vde)
Collector-Emitter Saturation Voltage
(lc = 100 mAde, IB = 2.5 mAde)
(IC = 10 mAde, IB = 0.25 mAl
all
Base-Emitter Saturation Voltage
(lC = 10 mA, IB = 0.25 mAl
(lC = 100 mA, IB = 2.5 mAl
all
Base-Emitter on Voltage
(IC = 2 mAde, VCE = 5 Vdc)
all
30
40
100
120
180
250
380
80
120
160
240
40
45
60
60
145
220
300
170
250
350
500
190
260
380
550
400
630
1000
0.15
0.05
0.30
0.12
0.80
0.25
0.6
0.75
0.70
0.90
0.85
1.2
0.60
0.62
0.75
220
310
460
630
Vde
VCE(sat)
"VBE(sat)
Vde
Vde
VBE(on)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-225
BCY78,-VII, VIII, IX, X, BCY79,-VII, VIII,IX,X
I
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(lc = 10 mAde, VCE = 5 V, I = 100 MHz)
all
Output Capacitance
(VCE = 10 Vdc, IC
all
Input Capacitance
(VBE = 0.5 V, IC
all
I
Min
Typ
lBO
300
Max
Unit
BCY7B-VII, BCY79-VII
BCY7B'VIII, BCY79-VIII
BCY7B-IX, BCY79-IX
BCY7B-X, BCY79-X
= 5 Vdc, I = 1 kHz)
BCY7B-VII, BCY79-VII
BCY7B-VIII, BCY79-VIII
BCY7B-IX, BCY79-IX
BCY7B-X, BCY79-X
= 1 kHz)
Noise Figure
(lc = 0.2 mAde, VCE = 5 Vdc,
RS = 2 Kohms, I = 1 kHz)
MHz
pF
3.5
7
B
15
pF
Cib
= 1 kHz)
Voltage Feedback Ratio
(lc = 2 mAde, VCE = 5 Vdc, I
Symbol
Cob
= 0, I = 1 MHz)
Input Impedance
(IC = 2 mAde, VCE
I
IT
= 0, I = 1 MHz)
Small Signal Current Gain
(IC = 2 mAde, VCE = 5 Vdc, I
•
Type
SMALL SIGNAL CHARACTERISTICS
BCY7B-VII, BCY79-VII
BCY7B-VIII, BCY79-VIII
BCY78-IX, BCY79-IX
BCY7B-X, BCY79-X
hie
(h21e)
hie
(hl1e)
200
260
330
520
Kohms
1.6
2.5
3.2
7.5
h re
(hI2e)
4.5
6
B.5
12
X 10- 4
1.5
2
2
3
dB
NF
all
2
6
SWITCHING CHARACTERISTICS
IC - 10 rnA, IBI - 1 rnA, IB2 = 1 rnA
VBB = 3.6 V, Rl = R2 = 5 KQ
RL = 990 ohms
td
tr
ton
35
50
85
150
• See test circuit.
ts
tl
toft
400
80
480
BOO
IC = 100 rnA, IBI = 10 rnA, IB2 = 10 rnA
VBB = 5 V, Rl = 500 Q, R2 = 700 Q
RL = 98 ohms
td
tr
ton
5
50
55
150
ts
250
.200
450
BOO
.. See test circuit.
If"
toft
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-226
nS
nS
BCY78,-VII, VIII,IX,X, BCY79,-VII, VIII,IX,X
TEST CIRCUIT
+VBB
-10V(VCC)
c
: RL
...
t r < 5ns
v <0.01
Osz.
tr < 5ns
Z6 ~ 100ko
~rBAY63
•
RJ =500
FIGURE 2 - CURRENT GAIN
(BCY78-VIIIIBCY79-VIII)
FIGURE 1 - CURRENT GAIN
(BCY78-VII/BCY79-VII)
1000
1000
100 ·C
z
;;:
to
>~ 100
'"
'"
::>
'-'
100·C
-
-;5:~
-
1--
r_
....
-50·C
f.---
to
f..--I-
;;:
r-!--
e-
25 ·C
z
>--
~
'"'-'
L
100
0- 0--..
50·C
::>
~
~
%
%
VCE'l V
10
10-'
10 0
10'
VCE·l V
10
10 '
10'
COLLECTOR CURRENT (mA)
FIGURE 4 - CURRENT GAIN
(BCY78-X/BCY79-X)
FIGURE 3 - CURRENT GAIN
(BCY78-IX/BCY79-IX)
1000
1000
100·C
100·C
=~
z
;;:
102
10'
COLLECTOR CURRENT (mA'
to
-
>w 100
.
'"'-'
25 ·C
i--
.....
--
'-.
Z
'"::>
-
25·C
50·C
..........
-501;
0,
:--
~
%
VCE'l V
VCE'l V
10
10
10-'
10.
10'
COLLECTOR CURRENT (mA)
102
10-'
100
10'
COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-227
102
BCY78,-VII, VIII,IX,X, BCY79,-VII, VIII,IX,X
FIGURE 5 - SATURATION VOLTAGE
FIGURE 6 - SATURATION VOLTAGE
o. 9
TA-25·C
o. 8
0. 2
~
II
~ O. 7
...
IJ
~
/
1
S
VCE (salllc!la = 40
25·C
III
I
-55·C
0
10"
lit'
./
-
O. 6
>
>-
./
l00·C
O. 5
-
V
T -100 ·C
./
V
o..1--- I-10'
VBE (salllc!la ~40
I--
/
10'
1./
V-
102
10'
10"
lit'
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
FIGURE 8 - TOTAL PERMISSIBLE POWER
DISSIPATION (BCY78/BCY79)
FIGURE 7 - INPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
lIP
I
VCE =5 V
1 102
...!E
; 0.50
:::I
3
10
/
,
~
0.25
10"
05
.......
~ 0.15
IIC
IIC
U
"
!/
Rth J case
.........
--
.........
r-- I---
"" """
;;;;.:.:::.,: _Rlhl.mb.~
~ i:S:
06
0.7
0.8
0.9
VBE. BASHMITIER VOLTAGE (VOLTS)
TEMPERATURE rCI
FIGURE 9 - CURRENT GAIN
BANDWIDTH PRODUCT
FIGURE 10 - CAPACITANCES
-
10
7.0
....
.."..
,/
.
VeE"" ,v
~
T... =-2IOC
5.0
f....
5
-
Cib
TJ-250 C _
..........
z
§
,. ..
..
1.0
0.4
.00
~
0.& 0.1 1.0
2.0
4.0
6.0 8.010
VR. REVERSE VOLTAGE (VOLTSI
Ie. COLLECTOR CURRENT (mAdeI
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
4-228
-
...... .....
3.0
2.0
• .1
200
100
--20
30
40
BF257
BF258
BF259
MAXIMUM RATINGS
Symbol
Rating
BF
BF
BF
Unit
257 258 259
Collector-Emitter Voltage
VCEO
160 250 300
Vdc
Collector-Emitter Voltage
VCER
160 250 300
Vdc
Collector-Base Voltage
VCBO
160 250 300
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.1
Adc
Collector Current - Contmuous
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
0.8
4.57
Watt
mW;oC
Total Device Dissipation @TC
Derate above 25°C
~
25°C
Po
5.0
28.6
Watt
mWjOC
TJ,Tstg
- 65 to +200
°c
Operating and Storage Junction
Temperature Range
HIGH VOLTAGE TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (T A
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
160
250
300
--
--
--
--
--
--
-
--
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC ~ 30 mAdc, IB ~ 0)
Collector-Base Breakdown Voltage
(lc ~ 100 ~Adc, IE ~ 0)
V(BR)CEO
BF257
BF258
BF259
V(BR)CBO
BF257
BF258
BF259
Emitter-Base Breakdown Voltage
(IE ~ 100 ~Adc, IC ~ 0)
Collector
(VCB ~
(VCB ~
(VCB =
Vdc
V(BR)EBO
Cutoff Current
100 Vdc, IE ~ 0)
200 Vdc, IE = 0)
250 Vdc, IE = 0)
ICBO
160
250
300
---
5.0
-
Vdc
--
Vdc
nAdc
---
1
1
1
25
80
-
-
0.1
1.0
Vdc
IT
--
110
-
MHz
Reverse Transfer Capacitance
(VCB = 30 Vdc, IE = 0, f = 500 kHz)
C re
--
3.5
--
pF
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 500 kHz)
Ccb
--
5.5
-
pF
BF257
BF258
BF259
50
50
50
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VCE
=
hFE
--
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 30 mAdc, IB = 6.0 mAdc)
VCE(sat)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 30 mAdc, VCE = 10 Vdc, I
= 100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-229
•
BFW43
, MAXIMUM RATINGS
Rating
Symbol
Value
Collector-Emitter Voltage
VCEO
150
Vdc
Collector-Base Voltage
VCBO
150
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
0.1
Adc
Collector Current - Continuous
•
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Unit
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
0.4
2.66
Watt
mWf'C
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.4
8.0
Watt
mWf'C
Operating and Storage Junction
Temperature Range
TJ, Tstg
°c
-65 to +200
THERMAL CHARACTERISTICS
HIGH VOLTAGE TRANSISTOR
Characteristic
I
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
125
°CIW
Thermal Resistance, Junction to Ambient
ROJA
438
°CIW
ELECTRICAL CHARACTERISTICS (TA
PNPSILICON
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 2 mA, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 ~Adc,IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 ~Ade, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 100 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCB = 100 V, IB = 0) TA = 125°C
ICEO
Vdc
150
Vde
150
Vde
6
10
10
nA
~
ON CHARACTERISTICS (1)
DC Current Gain
(lc = 1 mA, VCE = 10 V)
(lc = 10 mA, VCE = 10 V)
(lc = 10 ~A, VCE = 10 V, TA
hFE
40
40
= -55°C)
30
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1 mAde)
VBE(sat)
Vde
0.15
0.5
0.7
0.9
60
110
200
-
3.5
7
-
100
-
-
400
--
Vde
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f
Output Capacitance
(IE = 0, VCB = 20 Vde, f
Turn On Time
(lBl = 10 mA, IC
tr
= 10 MHz)
Cobo
=
1 MHz)
ton
= 50
mAde, VCC
= 100 Vde)
Turn Off Time
(IB2 = 10 mAdc, IC = 50 mAde, VCC
toff
= 100 Vde)
MHz
. (1) Pulse Test: Pulse Width';; 300 I's, Duty Cycle';; 2%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-230
pF
ns
ns
BFW43
FIGURE 2 - TURN-ON TIME
FIGURE 1 - CURRENT-GAIN-BANDWIDTH PRODUCT
1000
." 500
'"
~
t:;
500
=>
~ 200
'"
b
I--- '0
-
100
"
li:
o
z
~
0
z
/'
;(
'"...
0/
~
2
B
.i
10
10
""-
VCE/off) ~ 100 V
Ic/la ~ 5.0
ISl ~ la2
TJ ~ 25'C
r"--
;:: 100
TJ 25'C
VCE - 20 V
, - 20 MHz
./'
200
50
.,
20
50
20
10
20
10
10
50
20
50
IC. COLLECTOR CURRENT (mAl
100
DUTY CYCLE < 1%
1"I,<5ns
'-...
200
r-
0.1 p.F
Vin o-j t--t--~>-H:
100
50n
50
0
20
50
10
20
100 V
2.2kn
Vin
I,
~
10 p.s
t--
.........
Vaa VCC
OVM-
IS
500
10
10
50
FIGURE 4 - SWITCHING TIME TEST CIRCUIT
1000
~
20
IC. COLLECTOR CURRENT (mAl
FIGURE 3 - TURN-OFF TIME
g
10
"
50
100
I Ion
Vin
-lO.BV
~
Vsa
110ff
-20V
+9.2V
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-231
VOU1
t--~2"'0kl1-..... SAMPliNG SCOPE
50n
•
BFX38
BFX40
MAXIMUM RATINGS
Symbol
BFX38
BFX40
Unit
Collector-Emitter Voltage
VCEO
55
75
Vdc
Collector-Base Voltage
VCBO
55
75
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Rating
Collector Current -
a
Continuous
Total Device'Dissipation @ TA
Derate above 25°C
=
25°C
Po
1.25
7.15
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
7.0
40
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
ROJC
20
°CIW
Thermal Resistance, Junction to Ambient
ROJA
140
°CIW
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH CURRENT TRANSISTOR
PNP SILICON
Refer to 2N4405 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Ie = 10 mA)(1)
V
V(BR)CEO
BFX38
BFX40
Collector-Base Breakdown Voltage
(lC = 10,.,A)
55
75
V(BR)CBO
BFX38
BFX40
Emitter-Base Breakdown Voltage
(IE = 10,.,A)
55
75
V(BR)EBO
Collector Cutoff Current
(VCB = 40 V)
(VCB = 50 V)
(VCB = 40 V, TA = 125°C)
(VCB = 50 V, TA = 125°C)
ICBO
BFX38
BFX40
BFX38
BFX40
-
-
V
-
5.0
-
V
-
50
50
50
50
nA
-
,.,A
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(lC = 150 mA, IB = 15 mA)(1)
(lc = 500 mA, IB = 50 mA)(1)
VCE(sat)
-
DC Current Gain
(lC = 100 p.A, VCE = 5.0 V)(l)
(lc = 100 mA, VCE = 5.0 V)O)
(lc = 500 mA, VCE = 5.0 V)(l)
(lc = 1.0 A, VCE = 5.0 V)(l)
hFE
BFX38140
BFX38140
BFX38140
BFX38
BFX40
Emitter-Base Saturation Voltage
(lC = 150 mA, IB = 15 mA)(l)
(lC = 500 mA, IB = 50 mA)(l)
DC Current Gain
(lC = 100 mA, VCE
60
85
60
30
25
VBE!sat)
hFE
=
(1) Pulsed: Pulse Duration
5.0 V, TA
=
-
=
BFX38/40
125°C)(1)
300 p.s, Duty Cycle
=
1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-232
-
V
0.15
0.5
-
-
V
-
0.9
1.1
30
-
-
BFX38, BFX40
I
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
SMALL SIGNAL CHARACTERISTICS
Bandwidth Product
Current Gain
(lc = 50 rnA, VCE = 10 V, f = 100 MHz)
Symbol
fT
Output Capacita nce
(VCB = 10 V)
Cob
Input Capacitance
(VEB = 0.5 V)
Cib
Turn On Time
(IC = 500 rnA, IB1 = 50 rnA)
ton
Turn Off Time
(IC = 500 rnA, IB1 = IB2 = 50 rnA)
toff
Fall Time
(lc = 500 rnA, IB1 = 182= 50 rnA)
tr
Min
Max
Unit
MHz
100
pF
20
pF
120
ns
100
ns
350
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-233
ns
50
•
BFX48
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.1
Amp
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
0.36
2.06
mWrC
Total Device Dissipation @ TC = 25'C
TC = 100'C
Derate above 25'C
Po
1.2
0.686
6.86
mWrC
TJ, Tstg
-65 to +200
'c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
146
'CIW
Thermal Resistance, Junction to Ambient
ROJA
486
'CIW
Rating
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
CASE 22-03. STYLE 1
TO-1S (TO-206AA)
Watt
Watt
3
2
1
1 Emitter
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
I
!~~'-
ELECTRICAL CHARACTERISTICS (TA
=
PNPSILICON
Refer to 2N869A for graphs.
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mA)(l)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 10 ~A)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 ~A)
V(BR)EBO
V
30
V
30
V
5
Collector Cutoff Current
(VCE = 20 V)
(VCE = 20 V, TA = 125°C)
ICES
15
15
nA
~A
ON CHARACTERISTICS
DC Current Gain
(lc = 1 0 ~A, VCE = 1 V)
(IC = 100 ~A, VCE = 1 V)
(lc = lOrnA, VCE = 1 V)
(lc = 50 rnA. VCE = 1 V)
(lc = 10 rnA, VCE = 1 V, TA
hFE
40
70
90
20
30
= -55°C)
Collector-Emitter Saturation Voltage
(IC = 1 rnA, IB = 0.1 rnA)
(IC = lOrnA, IB = 1 rnA)
(lC = 50 rnA, IB = 5 mA)(l)
VCE(sat)
Emitter-Base Saturation Voltage
(IC = 1 rnA, IB = 0.1 rnA)
(lc = 10 rnA. IB = 1 rnA)
(IC = 50 rnA, IB = 5 mA)(l)
VBE(sat)
V
0.13
0.14
0.3
V
0.75
0.9
1.1
SMALL SIGNAL CHARACTERISTICS
Current Gam - BandWidth Product
(lc = 10 mAo VCE = 20 V. f = 100 MHz)
fT
Output Capacitance
(VCB = 10 V)
Cob
Input Capacitance
(VEB = 0.5 V)
Cib
MHz
400
pF
3.5
pF
5.5
Noise Figure
(lc = 1 mA, VCE
= 20 V, f = 100 MHz)
NF
Turn On Time
(lc = 50 rnA. IBl
=5
dB
6
ns
ton
50
rnA)
Turn Off Time
(IC = 50 rnA, IBl = IB2 = 5 rnA)
Collector-Base Time Constant
(lC = 10 rnA. VCE = 20V,f = 80 MHz)
(1) Pulsed: Pulse Duration
= 300
~s,
Duty Cycle
ns
toff
160
ps
rb'cc
40.
= 1%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-234
BFX85
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
60
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
1.0
Amp
Po
0.8
4.57
Watt
mW/oC
TJ, Tstg
-65 to +200
°c
Collector Current - Contmuous
Total Device Dissipation @ T A
Derate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RHJC
35
°C/W
Thermal Resistance, JunctIOn to Ambient
RHJA
220
°C/W
Characteristic
Refer to 2N3019 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAde, VBE = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 I'Adc, 16 = 0)
V(BR)CBO
Vdc
60
Vdc
100
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0, TJ = 100°C)
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, T· = 10o'°C)
ICBO
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
(VEB = 5 Vdc, IC = 0, TJ
(VEB = 6 Vde, IC = 0)
lEBO
= 100°C)
50
2.5
500
2.5
nAdc
I'Adc
nAdc
!!Adc
50
2.5
500
nAdc
I'Adc
nAde
ON CHARACTERISTICS
DC Current Gam
(lc = 10 mAde, VCE = 10 Vde)
(IC = 150 mAde, VCE = 10 Vde)
(lc = 500 mAde, VCE = 10 Vde)
(lc = 1.0 Ade, VCE = 10 Vde)
hFE
50
70
30
15
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
(lc = 150 mAde, IB = 15 mAde)
(IC = 500 mAde, IB = 50 mAde)
(lc = 1.0 Adc, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
(IC = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
(IC = 1.0 Adc, (B = 100 mAde)
VBE(sat)
Vdc
0.15
0.35
1.00
1.60
Vdc
1.2
1.3
1.5
2.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-235
•
BFX85
I
ELECTRICAL CHARACTERISTICS leontinued) ITA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
IIc = 50 mAde. VCE = 10 Vde, f = 35 MHz)
Collector Capacitance
IVCB = 10 Vdc, IE = 0, f = 1 MHz)
•
MHz
fT
50
pF
Cobo
12
Small Signal Current Gain
IIc = 1 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
(IC = 10 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
hfe
Input Impedance
IIC = 10 mAde, VCE ='5 Vdc, f = 1 kHz)
hie
Voltage Feedback Ratio
(IC = 10 mAde, VCE = 5 Vde, f = 1 kHz)
hre
20
25
Q
750
5.0
Output Admittance
(IC = 10 mAde, VCE = 5 Vdc, f = 1 kHz)
hoe
80
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-236
xl0
4
~mhos
BFYSO
BFY51
BFY52
MAXIMUM RATINGS
Rating
Symbol
Collector-EmItter Voltage
BFY BFY BFY
50 51 52
Unit
VCEO
35
30
20
Vdc
Collector-Base Voltage
VCBO
80
60
40
Vdc
Emitter-Base Voltage
VEBO
6
Vdc
IC
1
Adc
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
0.8
4.6
Watt
mW/oC
Total Device Dissipation @'TC
Derate above 25°C
= 25°C
Po
5
28.6
Watt
mW/oC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
I
I
I
I
Max
I
Unit
RHJC
16.5
°C/W
R/iJA
I
89.5
1
I
Symbol
•
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
°C/W
Refer to 2N3019 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I Symbol I
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IIC = 10 rnA)
Collector-Base Breakdown Voltage
(IC = 10 ~A)
V
V(BR)CEO
BFY50
BFY51
BFY52
35
30
20
V
V(BR)CB"O
80
60
40
BFY50
BFY51
BFY52
Emitter-Base Breakdown Voltage
(IE = 10 ~A)
V
V(BR)EBO
6
Collector Cutoff Current
(VCB = 60 V)
(VCB = 40 V)
(VCB = 30 V)
BFY50
BFY51
BFY52
Collector Cutoff Current
(VCB = 60 V, Tj = 100°C)
(VCB = 40 V, Tj = 100°C)
(VCB = 30 V, T· = 100°C)
BFY50
BFY51
BFY52
nA
ICBO
50
~A
ICBO
2.5
Emitter Cutoff Current
(VEB = 5 V)
(VEB = 5 V, T· = 100°C)
lEBO
50
2.B
nA
~A
ON CHARACTERISTICS
DC Current Gain
(IC = lOrnA, VCE
(lc
=
IIc
= 1 A,
=6
150 mA, VCE
VCE
=6
hFE
V)
=6
V)
= 1 A,
lB·
20
30
BFY50
BFY51
BFY52
30
40
60
15
V)
Collector-Emitter Saturation Voltage
(IC = 150 rnA, IB = 15 mA(l)
(lc
BFY50
BFY51-52
= 100 mA(l)
V
VCE(sat)
BFY50
BFY51-52
0.2
0.35
BFY50
BFY51-52
1
1.6
Emitter-Base Saturation Voltage
IIc =1 A, IB = 100 mA(l)
V
VBE(sat)
2
(1) Pulsed: Pulse Duration = 300 I's. Duty Cycle = 1%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-237
BFY50,BFY51,BFY52
I
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I Symbol I
Characteristic
Min
Max
Unit
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
(lc = 1 rnA, VCE.= 6 V, f = 1 kHz)
hfe
BFY50
BFY51-52
10
30
Output Capacitance
(VCB = 12 V, f = 500 kHz)
pF
Cob
12
Current Gain Bandwidth Product
(lc = 50 rnA. VCE = 6 V, f = 20 MHz)
fT
MHz
60
50
BFY50
BFY51-52
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-238
BSSSO
BSSSI
BSSS2
MAXIMUM RATINGS
Symbol
Rating
BSS BSS
50 51 52
ass
Unit
VCEO
45
60
80
Vdc
Collector-Emitter Voltage
VCER
45
60
80
Vdc
Collector-Base Voltage
VCBO
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector-Emitter Voltage
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Collector 3
IC
1.0
Adc
Total Device DISSipation @ TA
Derate above 25°C
~
25°C
PD
0.8
5.3
Watt
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
PD
5
28.6
Watt
mW;oC
TJ, T stg
-65 to +200
°c
Collector Current - Continuous
Operating and Storage Junction
Temperature Range
,If!
Emitter
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
I
I
Symbol
Max
Unit
RHJC
35
°C/W
RHJA
220
°C/W
I
ELECTRICAL CHARACTERISTICS (T A
DARLINGTON TRANSISTOR
NPN SILICON
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Cutoff Current
(VCB ~ 45 V, IE ~ 0)
(VCB ~ 60 V, IE ~ 0)
(VCB ~ 80 V, IE ~ 0)
nA
ICBO
50
50
50
BSS50
BSS51
BSS52
Emitter-Cutoff Current
(VEB ~ 4 V, IC ~ 0)
nA
lEBO
50
Collector-Emitter Breakdown Voltage
(lc ~ lOrnA, IB ~ 0)
V
V(BR)CEO
45
60
80
BSS50
BSS51
BSS52
Emitter-Base Breakdown Voltage
(IB ~ 100 ~A, IC ~ 0)
V
V(BR)EBO
5
ON CHARACTERISTICS
DC Current Gain (1)
(IC ~ 150 rnA, VCE
(IC ~ 500 rnA. VCE
hFE
~
~
1500
2000
10 V)
10 V)
Base-Emitter Voltage(l)
(IC ~ 150 rnA, VCE ~ 10 V)
(IC ~ 500 rnA, VCE ~ 10 V)
V
VBE(on)
1.4
1.5
1.55
1.65
V
Saturation Voltage(l)
(IC ~ 500 rnA, IB ~ 0.5 rnA)
(lc ~ 500 rnA, IB ~ 0.5 rnA)
(lc ~ 1 A. IB ~ 1 rnA)
(IC ~ 1 A, IB ~ 1 rnA)
(lc ~ 1 A, IB ~ 4 rnA)
(IC ~ 1 A, IB ~ 4 rnA)
1.3
1.9
1.6
2.2
1.6
2.2
VCE(sat)
VBE(sat)
VCE(sat)
VBE(sat)
VCE(sat)
VBE(satl
BSS51
BSS51
BSS50-52
BSS50-52
DYNAMIC CHARACTERISTICS
IT
Current Gain Bandwidth Product
(lc
~
500 rnA, VCE
~
5, f
~
20 MHz)
Output Capacitance
~
~
pF
Cob
(VCB~ 10V,IE~0,f~
Turn On Time (lc
Turn Off Time (lc
MHz
70
500 rnA, IB 1
500 rnA, IB 1
(1) Pulse Test: Pulse Width
~
11
1 MHz)
300
~
~
~s,
-IB2
-IB2
~
~
0.5 rnA)
0.5 rnA)
Duty Cycle
~
ton
toff
2%, unless otherwise specified.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-239
400
1500
25
ns
•
BSS50, BSS51, BSS52
FIGURE 1 - CURRENT GAIN versus COLLECTOR CURRENT
hFE
10
,
-VCE=10V
TA-150 0 C
""'-T
10'
TA=25 0 C
..
I
""
10'
10'
10 '
-....... ~
r;:;;:= -~50C
IC InA
-
10 I
10
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-240
BSS71
BSS72
BSS73
MAXIMUM RATINGS
Symbol
BSS BSS BSS
71 72 73
Unit
Collector-Emitter Voltage
VCEO
200 250 300
Vdc
Collector-Base Voltage
VCBO
200 250 300
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Rating
IC
0.5
Adc
25°C
Po
0.5
2.86
Watt
mW/oC
= 25°C
Po
2.5
14.3
Watt
mW/oC
TJ, Tstg
-65 to +200
°c
Collector Current - Contmuous
=
Total Device Dissipation @ T A
Derate above 25°C
Total Device Dissipation @TC
Derate above 25°C
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Operating and Storage Junction
Temperature Range
~~'~"'
1Ji
,II,
""'""'
HIGH VOLTAGE TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted.)
I
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = lOrnA, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100 pAdc, IE = 0)
Vdc
V(BR)CEO
BSS71
BSS72
BSS73
200
250
300
-
--
-
--
-
--
200
250
300
-
--
--
6
6
6
---
-
--
V(BR)CBO
BSS71
BSS72
BSS73
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
Collector Cutoff Current
(VCB = 150 V, IE = 0)
(VCB ~ 200 V, IE = 0)
(VCB = 250 V, IE ~ 0)
ICBO
BSS71
BSS72
BSS73
Collector-Emitter Cutoff Current
(VCE ~ 150 V, 18 ~ 0)
(VCE ~ 200 V, 18 ~ 0)
(VCE ~ 300 V, IB ~ 0)
ICEO
BSS71
BSS72
BSS73
Emitter-Cutoff Current
(VBE ~ 5 Vdc, Ie ~ 0)
lEBO
ALL
Vdc
--Vdc
V(BR)EBO
BSS71
BSS72
BSS73
-
-
-nA
-
--
--
--
50
50
50
-
-
----
500
500
500
--
--
50
20
30
50
40
--
40
45
120
140
35
-
--
0.15
0.25
0.35
0.25
0.3
0.4
0.5
0.7
0.8
0.85
0.9
0.8
0.9
1.0
-
nA
nA
ON CHARACTERISTICS(I)
DC Current Gain
(lc ~ 0.1 mA, VCE = 1 V)
(lc = 1 mA. VCE ~ 10 V)
(lc = 10 mA, VCE = 10 V)
(lc = 30 mA, VCE ~ 10 V)
(lc = 100 mA, VCE ~ 10 V)
hFE
BSS71
ALL
ALL
ALL
BSS73
Collector-Emitter SaturatIOn Voltage
(IC = 10 mAde, IB ~ 1 mAde)
(IC = 30 mAde, IB ~ 3 mAde)
(lc = 50 mAde, IB = 5 mAde)
(lc ~ 100 mAde, IB ~ 20 mAdc)
Base-Emitter SaturatIOn Voltage
(IC = 10 mAdc, IB = 1 mAdc)
(IC = 30 mAde, IB = 3 mAdc)
(IC = 50 mAde, IB = 5 mAde)
(lc = 100 mAde, IB = 10 mAde)
VCE(sat)
ALL
ALL
ALL
BSS73
-
ALL
ALL
ALL
BSS73
--
• Pulse Test. Pulse Width :<: 300 us, Duty Cycle <: 2%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-241
-250
--
Vdc
VBElsat)
-
-
Vdc
II
BSS71, BSS72, BSS73
I
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
I
Min
Typ
Max
50
70
200
-
3.5
--
-
45
--
--
lOa
-
--
400
-
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 20 mAde, VCE = 20 Vdc, I = 20 MHz)
•
Output Capacitance
(IE = 0, VCB = 20 Vdc, 1= 1 MHz)
Cob
Input Capacitance
(lc = 0, VEB ~ 0.5 Vdc, I = 1 MHz)
Cib
Turn On Time
(lBl ~ 10 mA, IC
ton
~
MHz
It
pF
ns
50 mAde, VCC = 100 Vdc)
Turn Off Time
(lB2 ~ 10 mAde, IC ~ 50 mAde, VCC ~ 100 Vdc)
toll
FIGURE 1 - DC CURRENT GAIN
pF
ns
FIGURE 2 - CAPACITANCES
100
70
TJ
25 0 C-=
50
10 V
VCE
z
TJ
100
/
~ 150
a::
= +1;:;!f..-
~
w
'--'
z
~
w
-55°C
'--'
Ceb
~ 20
ro.~
+25 0 C
=>
'"
r--
30
«
'" 200
10
r-
U 70
-
«
~ 50
50
Cell
U 30
0::;----
20
10
01
05
10
50
10
50
20
10
100
02
05
IC, COLLECTOR CURRENT (mAl
10
20
50
10
20
VR. REVERSE VOLTAGE (VOLTSI
10 0
500
0
.........
r
0/
TJ
VCE
f
0
=
=
=
,
1 200
'"
./
\
25°C
20 V
20 MHz
50
~oc
100
'"
50
8
20
=>
'--'
\
0
~
0
'I . .
25 WATT THERMAL .
LIMITATION
TC 25°C
F
de
" "
rn~
...
i'!o.,
10
"
10
50
30
0
30
50
10
20
30
50
200
"~ "",00",
" "l
u
20
100
FIGURE 4 - ACTIVE-REGION SAFE
OPERATING AREA
FIGURE 3 - CURRENT·GAIN - BANDWIDTH PRODUCT
,.....
-
100
IC COLLECTOR CURRENT (mAl
BSSn 3!
BSm ==
B5S73 =
50
10
2030
50
100
VCE. COLLECTOR EMITTER VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-242
e~
200
300
Bssn, BSS72, BSS73
FIGURE 5 - "ON" VOLTAGES
FIGURE 6 - TEMPERATURE COEFFICIENTS
2,5
14
2
r---~
~
w
~
~
1
T = 2;'C
10
0,08
--
IC/ls = 10
~ VSE(,al)
8w
:::>
'"
;>
~
0,04
'"
Il:
I
I
VCE(.al)
o
2,0
1.0
3,0
V
ICIIS - 10
Idls
----
20 30
10
IC, COLLECTOR CURRENT ImA)
5,0
50
5
100
~5'C 101125't
200
w
~ 100
-1.5
£
-2,0
r- evs for VSE
I
-2,5 1,0
~
I
II
2,0
\
- 55'C 10 125'C
3,0
5,0 7,0 10
20
IC, COLLECTOR CURRENT (rnA)
30
50
70
100
FIGURE 8 - TURN-OFF TIME
1.0K
VCE(off) 100V
5,0
IdlS
- = 25'C
TJ
,,""'"'-
"
r
I " --
50
'"
2,0
""g
5,0
'-...
10
.....
50
20
I'
r::::==:
VCE(off)
50 r---Idls
r---ISl
r---TJ
20
......
"'"
10
200
~
': 100
"-
- --
I,
500
Id
20
10
1,0
-.... i"-
-1,0
::;
~
/
./
I-- r-
5rCIO ~5'C
FIGURE 7 - TURN-ON TIME
g
II
-0,5
1,OK
500
10
0,5 f--- eVC for VCE(,al)
It
10V
=
1,0
U
I--r-
IC
IS
1.5
E
f!?
1l'i
VCE
VSE(on)
§? 0,06
0,02
2,0
G
10
1,0
100
100 V
5,0
IS2
= 25'C
2,0
5,0
IC, COLLECTOR CURRENT ImA)
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
Duty Cycle
< 1%
t r, tf < 5 ns
Vin~
VBB Vce
ov~L
=
100 V
2,2 kO
Vout
lsampling
~
20 kO
Scope
O,l/LF
Yin --t H..--.---t-H:
500
500
VIN
I ton
I toff
10
20
IC, COLLECTOR CURRENT (rnA)
,
VBB
,
10,6 V
20 V
-9,2 V
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-243
50
100
II
BSS74
BSS75
BSS76
MAXIMUM RATINGS
Rating
•
Symbol
BSS BSS BSS
74 75 76
Unit
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Collector-Emitter Voltage
VCEO
200 250 300
Vdc
Collector-Base Voltage
VCBO
200 250 300
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
0.5
Adc
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
0.5
2.86
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
2.5
14.3
Watt
mW/oC
TJ, T stg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
fl ~~"~.
,1/
"m~'
HIGH VOLTAGE TRANSISTOR
THERMAL CHARACTERISTICS
PNPSILICON
Cha racteristic
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mA, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 ~Adc, IE = 0)
V(BR)CEO
BSS74
BSS75
BSS76
Emitter-Base Breakdown Voltage
(IE = 1 00 ~Adc, IC = 0)
200
250
300
---
-
-
---
6
6
6
BSS74
BSS75
BSS76
IC80
BSS74
BSS75
BSS76
Collector-Emitter Cutoff Current
(VCE = 150 V, IB = 0)
(VCE = 200 V, IB = 0)
(VCE = 300 V, IB = 0)
ICEO
BSS74
BSS75
BSS76
Emitter-Cutoff Current
(VBE = 5 Vdc, Ic = 0)
ON CHARACTERISTICS(1)
lEBO
ALL
DC Current Gain
(lc = 0.1 mA, VCE = 1 V)
(lc = 1 mA, VCE = 10 V)
(lc = 10 mA. VCE = 10V)
(lc = 30 mA, VCE = 10 V)
(lc = 100 mA, VCE = 10 V)
-
--
-
Collector-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 1 mAdc)
(lc = 30 mAdc, IB = 3 mAdc)
(IC = 50 mAdc, IB = 5 mAdc)
(IC = 100 mAdc, IB = 20 mAdc)
nA
--
-
--
---
-
500
500
500
-
-
50
20
30
35
35
40
45
50
55
40
-
---
0.15
0.25
0.35
0.40
0.3
0.4
0.5
0.7
0.8
0.85
0.9
0.8
0.9
1.0
-
ALL
ALL
ALL
BSS76
Base-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 1 mAdc)
(IC = 30 mAde, IB = 3 mAde)
(lc = 50 mAde, IB = 5 mAdc)
(IC = 100 mAdc, 18 = 10 mAdc)
ALL
ALL
ALL
BSS76
~s,
Duty Cycle:5 2%.
-
VSE(sat)
nA
--
-
150
-
Vdc
Vdc
-
--
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-244
50
50
50
nA
-
VCE(sat)
Vdc
--
-
hFE
BSS74
ALL
ALL
ALL
BSS76
Vdc
-
Vdc
V(BR)EBO
Collector Cutoff Current
(VCB = 150 V, IE = 0)
(VCB = 200 V, IE = 0)
(VCB = 250 V, IE = 0)
• Pulse Test: Pulse Width:5 300
-
V(BR)CBO
BSS74
BSS75
BSS76
--
200
250
300
-
BSS74,BSS75,BSS76
ELECTRICAL CHARACTERISTICS (continued) (TA
I
0
25'"C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
50
110
200
-
3.5
--
-
45
--
-
100
--
--
400
--
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth product
(lc = 20 mAde, VCE = 20 Vdc, I
= 20
MHz
It
MHz)
Output Capacitance
(IE = o. VeB = 20 Vdc, I = 1 MHz)
Cob
Input Capacitance
(lc = 0, VEB = 0.5 Vde, f
Cib
=
1 MHz)
Turn On Time
(IB 1 = 10 mAo IC = 50 mAde. Vec
Turn Off Time
(IB2 = 10 mAde. IC
= 50
pF
ton
= 100 Vde)
ns
ns
toff
mAde, VCC = 100 Vde)
FIGURE 1 - DC CURRENT GAIN
pF
•
FIGURE 2 - CAPACITANCES
100
C.b
70
50
z
30
;;{
...to
200
VCE
~
= 10 V
~ 20
TJ=+125OC
~ 100
u
~
r--.
w
u
:i
1:l
c
.
10
E 7.0 I--
+25 DC
50
..
Ccb.
~ 5.0
55 o~
u' 3
20
a
2.0
10
0.1
05
10
10
5.0
50
20
1.0
100
0.2
0.5
1.0
IC. COLLECTOR CURRENT ImA)
FIGURE 3 - "ON" VOLTAGES
4
I
I
G
'"...
U
~
O. 6
>
>'
4
o. 2 0
10
VBElon) ,.. VCE - 10 V
3.0
50
OVC lor VCEisal1
/
~
10
20
30
200
-0.5
~
-1.0
50
J
I.
IC. COLLECTOR CURRENT imA)
L ...I--H""
Ove lor VeE
-2.0
-25
100
10
2.0
30
50 70 10
20
30
IC. COLLECTOR CURRENT imA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-245
J
~
-55 0 C to 125 0 e
~ -1. 5 -
...i
J/
-550C to 25°C
:3
w
f3
...
I
I I
VCElsa.) ,.. ICIIB ~ lci
2.0
25 0C.o 1250C
1.0
~ 05
10
to
c
100
I
le. lO
Ie
~ 2.0
>
.§ 1.5
~
c
!:::j
50
FIGURE 4 - TEMPERATURE COEFFICIENTS
;;;1 0
? o. SI-- VSEisa.I'" Iclle
w
2.0
5.0
10
20
VR. REVERSE VOLTAGE iVOLTS)
2.5
TJ=250C
2
.
TJ·250C=
50
70
100
BSS74,BSS75,BSS76
FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT
N
'"~
FIGURE 6 - TURN-ON TIME
1000
500
t;
500
::>
_1;'-.
~ 200
--
x
b
~
z
:iI
100
/'
:;(
•
'",.:.ffi
,.,..-
0
Z
]
I--
~
t= 10 0
250C
V
TJ
VCE
= 20
I
= 20 MHz
VCE(o") " 100 V
= 5.0
Ic/le
- lei
= le2
= 25 oC
TJ
i'
0
Id ""-
20 /
0
'"
'"
B
.l:' 1~0
"'-
t'--"
200
2.0
50
20
10
10
10
50
20
50
IC. COLLECTOR CURRENT ImAi
10
20
50
IC. COLLECTOR CURRENT (rnA)
FIGURE 8 - SWITCHING TIME TEST CIRCUIT
FIGURE 7 - TURN-OFF TIME
1000
!
200
~
100
-
IS
500
"
"
II
Duty
t •.
evd. < 1
%
t,
'-'
z
«
~/=~~ob_ -
- r--- r--
MM4258
~cb
>- 2.0
U
-;8::
Cib ~ ....
;t
«
<..:>
-
U
1.0
0.7
0.2
300.';:-'-::';-l....!.:';;---L-,,!::---::'::---'--+.,.-l-,:'::-'-.Lf;:_...L.-±---,:!::--...L-}.
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.3
0.5
0.7
FIGURE 3 - TURN·ON TIME
'
20
~-
0
0
0 ........
~"
1""..'-
0
~
UJ
i=
3.0
5.0 7.0
10
20
FIGURE 4 - TURN-OFF TIME
IC/IS - 10
TJ = 25°C
30 ........
:e
2.0
10 0
100
70
50
!
1.0
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
,
2.0
"- ........
UJ
I
Ir@VCC-l.5V
,.. "!.
~
Id @VSE(off) = 0
3.0
181 182':
Ic/lS 10 __
TJ = 25°C
~
10
-~
7.0
5.0
>-
2.0
,;;--,-:;,-;~;--,-::,-;:-,-:;!-:;-'-'-:II,;;-1L........t;~~-;';:-'-:~
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
1.0
IC, COLLECTOR CURRENT (mA)
-Is
3.0
I'--
~@VCC= 1.5 V
..,..,
1. 0
1.0
V
2.0
3.0
--
I--
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-278
.......
50
70
100
MM4257, MM4258
FIGURE 5 - SWITCHING TIME TEST CIRCUIT
VSS
VCC
VSS
Volts
Vin
Rl
ton
tott
ts
R2
Vin~
lin = 50 n
t,< 1.0 ns
tw = 240 ns
Vout
lm;>100kn
t,< 1.0 ns
R3
Volts
-5.&
+9.&
+9.0
Rl
Ohms
130
130
270
VCC
Volts
-1.5
-1.5
-3.0
GND
-&.0
-10
R2
Ohms
2.2 k
2.2 k
510
R3
Ohms
5k
5k
390
IC
lSI
IS2
rnA
rnA
rnA
10
10
10
1.0
1.0
10
1.0
10
-
50 n
•
DC-CURRENT GAIN
FIGURE 7 - MM4258
FIGURE 6 - MM4257
200
fJ
100
~ ~5bd
>
o
5.0 7.0
10
IC. COLLECTOR CURRENT (mA)
I
5.0
7.0
10
20
./'
30
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-279
V
50
20
30
50
MMSOOS
MMS006
MMS007
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
•
Symbol MM5005 MM5006 MM5007
Unit
Collector-Emitter Voltage
VCEO
60
80
100
Vde
Collector-Base Voltage
VCBO
80
100
120
Vde
Emitter-Base Voltage
VEBO
S.O
Vde
IC
2.0
Ade
loS
8.S7
Watts
mWI"C
8.0
4S.7
Watts
mWI"C
AUDIO TRANSISTOR
-6S to +200
"C
PNP SILICON
Collector Current -
Continuous
Total Device Dissipation
@TA= 2S"C
Derate above 2S"C
Po
Total Device Dissipation
@TC = 2S"C
Derate above 2S"C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 2S"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 ~de, IE = 0)
Vdc
V(BR)CEO
MMSOOS
MMSOOS
MMS007
SO
80
100
Emitter-Base Breakdown Voltage
(IE = 100 ~dc, IC = 0)
80
100
120
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vde, IE = 0)
(VCB = 100 Vde, IE = 0)
ICBO
MMSOOS
MMS006
MM5007
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
Vde
V(BR)CBO
MM500S
MMSooS
MM5007
-
S.O
-
-
Vdc
nAdc
-
-
200
200
200
-
100
40
-
SO
50
SO
2S0
2S0
2S0
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE =
(lC = 150 mAde, VCE =
(lC = 200 mAde, VCE =
(lC = 2S0 mAde, VCE =
-
hFE
All Types
MM500S
MM5006
MM5007
1.0 Vdc)
2.S Vde)
2.S Vdc)
2.S Vde)
Collector-Emitter Saturation Voltage
(lC = ISO mAde, IB = IS mAde)
VCE(sat)
-
O.S
Vde
Base-Emitter On Voltage
(lC = 150 mAde, VCE = 2.S Vde)
VBE(on)
O.SS
0.8
Vdc
It
30
-
MHz
Cobo
-
20
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(IC = 50 mAde, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
(1) Pulse Test: Pulse Width .. 300 /LS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-280
MM5262
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Emitter Voltage
VCES
60
Vdc
Collector-Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
2.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
5.71
Watt
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
4.0
22.8
Watts
mWfC
TJ, Tslg
-65 to +200
°c
Symbol
Max
Unit
R8JC
44
°CIW
R8JA(l)
175
°CIW
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GENERAL PURPOSE TRANSISTOR
NPNSILICON
(1) R8JA is measured with the device soldered into a typical printed circuit board.
Refer to 2N3724 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
50
60
-
-
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc, VBE = 0)
V(BR)CES
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
75
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
100
pAdc
10
pAde
100
pAdc
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
ICBO
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
ICES
-
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
Vdc
Vdc
ON CHARACTERISTlCS(2)
DC Current Gain
(lC = 100 mAdc, VCE = 1.0 Vdc)
(lC = 500 mAdc, VCE = 1.0 Vdc)
(lC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 1.0 Ade, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 1.0 Ade, IB = 100 mAde)
35
-
25
100
65
35
-
-
0.29
0.8
Vde
VBE(sat)
-
0.94
1.4
Vde
f,-
-
350
Cobo
-
7.3
Cib(j
-
72
40
SMALL-SIGNI'L CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
1.0 MHz)
SWITCHING CHARACTERISTICS
Turn-On TIme
Turn-Off TIme
(2) Pulse Test: Pulse Width"" 300 ps, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-281
-
MHz
pF
pF
•
MM5415
MM5416
MAXIMUM RATINGS
Rating
Symbol
Unit
VCEO
200
300,
Vdc
Collector-Base Voltage
VCBO
200
350
Vdc
Emitter-Base Voltage
VEBO
4.0
7.0
Vdc
IB
0.5
IC
1.0
Adc
25'C
PD
1.0
6.7
Watt
wrc
Total Power Dissipation @ TC = 50'C
Linear Derating Factor
PD
10
0.057
Watts
mwrc
TJ, Tstg
-65 to +200
·C
Base Cu rrent
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
•
MM5415 MM5416
Collector-Emitter Voltage
=
Operating and Storage Junction
Temperature Range
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
Adc
fi1.~~"~O
3~/[
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
17.5
'CIW
Thermal Resistance, Junction to Ambient
ROJA
150
'CIW
Characteristic
1 Emitter
TRANSISTOR
PNP SILICON
Refer to 2N5415 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
200
300
-
-
50
".Adc
-
50
50
".Adc
".Adc
-
20
20
30
30
150
120
VCE(sat)
-
2.5
Vdc
VBE(on)
-
1.5
Vdc
fr
15
-
MHz
Cobo
-
25
pF
Current Gain - High Frequency
(lC = 5.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
Ihlel
25
-
-
Real Part 01 Input Impedance
(lC = 5.0 mAdc, VCE = 10 Vdc, 1= 1.0 MHz)
Re(hie)
-
300
Ohms
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 10 mA. IB = 0)
VCEO(sus)
MM5415
MM5416
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
MM5415, MM5416
Collector Cutoff Current
(VCE = 175 Vdc, IE = 0)
(VCE = 280 Vdc, IE = 0)
MM5415
MM5416
Emitter Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
(VBE = 7.0 Vdc, IC = 0)
MM5415
MM5416
ICEO
ICBO
lEBO
-
Vdc
".Adc
ON CHARACTERISTICS
DC Current Gain
(lC = 50 mAdc, VCE = fO Vdc)
-
hFE
"
MM5415
MM5416
Collector-Emitter Saturation Voltage
(lC = 50 mAdc, IB = 5.0 mAdc)
MM5415, MM5416
Base-Emitter On Voltage
(lc = 50 mAdc. VCE = 10 V)
MM5415, MM5416
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, I = 5.0 MHz)
Output Capacitance
(VCB = 10 Vdc, 1= 1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-282
MM6427
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
IC
300
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25·C
= 25·C
Po
375
2.14
mW
Wf'C
Total Device Dissipation @ TC
Derate above 25·C
= 25·C
Po
1.25
7.15
Watts
Wf'C
TJ, Tstg
-65 to +200
·C
Operating and Storage Junction
Temperature Range
CASE 22-03, STYLE 1
TO-18 (TO-206M)
/I ~~-
3 Collector
'"
DARLINGTON TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R/lJC
140
·CfIN
Thermal Resistance, Junction to Ambient
R/IJA
467
·CfIN
Characteristic
ELECTRICAL CHARACTERISTICS
(TA
=
NPNSILICON
25·C unless otherwise noted.)
Max
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 100 JJAdc, IE = 0)
V(BR)CBO
50
Emitter-Base Breakdown Voltage
(IE = 10 JJAdc, IC = 0)
V(BR)EBO
12
-
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 0)
lEBO
-
100
nAdc
Characteristic
Unit
OFF CHARACTERISTICS
Vdc
Vdc
Vdc
ON CHARACTERISTICS(I)
DC Current Gain
(lc = 10 mAde, VCE = 5.0 Vdc)
(lc = 100 mAde, VCE = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lc = 100 mAde, IB = 0.1 mAde)
VCE(sat)
Base-Emitter On Voltage
(lc = 100 mAde, VCE = 5.0 Vdc)
VBE(on)
5000
10,000
-
-
-
1.5
Vdc
2.0
Vdc
8.0
pF
15
pF
-
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
100 kHz)
Cibo
-
hfe
1.25
Cobo
Small-Signal Current Gain(l)
(lC = 10 mAde, VCE = 5.0 Vdc, f
=
100 MHz)
(1) Pulse Test: Pulse Width"" 300 p,s, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-283
•
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
4-284
/
3 2 1
4
CASE2D-03
TO-206AF
(TO-72)
CASE 607-04
~1
10
CASE 606-04
(T0-91)
CASE 607-05
~1
MUltiPle.
Devices
9
CASE 610A-04
CASE 620-02
1
CASE 632-02
(To-116)
-
CASE 64&-06
16
1
CASE 648-06
CASE 650-02
CASE 654-07
Motorola's multiple (Duals and Quads) transistors have been
implemented with discrete transistor chips that have proven to
be the most popular for all-around performance at low cost.
Packaging options Include plastic and ceramic DIP's, ceramic
flat pak, and various metal-can outlines.
S-l
MAXIMUM RATINGS
2N2060
Symbol 2N2223,A
Rating
Collector-Emitter Voltage
2N2480A
Unit
40
40
Vde
Collector-Emitter Voltage
VCER
SO
-
-
Vde
Collector-Base Voltage
VCBO
100
75
80
Vde
Emitter-Base Voltage
VEBO
7.0
5.0
5.0
Collector Current -
•
VCEO
2N2480
60
Continuous
Total Device Dissipation
@TA= 25·C
2N2060,A
2N2223,A
2N2480,A
Derate above 25·C
2N2060,A
2N2223,A
2N2480,A
Po
Total Device Dissipation
@TC = 25"C
2N2060,A
Po
One Ole
All Die
Equal Power
0.5
0.5
0.3
0.6
0.6
0.6
mW
mWrC
2.S6
2.S6
1.72
3.43
3.43
3.43
2N2060 JAN, JTX, JTXV
AVAILABLE
CASE 654-07. STYLE 1
I
1.5
1.6
1.0
2N~23,A
~-
=
~
5 Emitter
DUAL
. AMPLIFIER TRANSISTOR
3.0
3.0
2.0
S.6
9.1
5.7
ELECTRICAL CHARACTERISTICS (TA
t9\
7 Collector
i.~ B:~
3 EmItter
NPNSILICON
mWrC
Operating and Storage Junction TJ, T&lg
Temperature Range
1 Collector
71
Watts
2N2480,A
Derate above 25·C
2N2060,A
2N2223,A
2N2480,A
I
Vde
mAde
500
IC
2N2060
2N2223,A
2N2480A
Refer to MD2218 for graphs.
17.2
11.4
11.4
·C
-65 to +200
25·C unless otherwise noted.)
Characteristic
Symbol
Min
VCER(sus)
SO
-
40
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 100 mAde, RBE '" 10 ohms)
2N2060, 2N2223, 2N2223A
Collector-Emitter Sustaining Voltage(l)
(lC = 20 mAde, IB = 0)
(lC = 30 mAde, IB = 0)
2N2480A
2N2060, 2N2223, 2N2223A
Collector-Base Breakdown Voltage
(lC = 100 ,..Ade, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ,..Ade, IC = 0)
V(BR)CBO
ICBO
2N24S0A
= 0)
2N2480A
(VCB = SO Vde, IE
= 0)
2N2060
2N2223, 2N2223A
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
100
SO
2N2060, 2N2223, 2N2223A
2N2480A
(VCB = 60 Vde, IE
=
60
150·C)
lEBO
2N2060
2N2223, 2N2223A
2N24S0A
-
15
,..Ade
0.02
-
0.002
0.Q1
-
10
15
nAde
-
5-2
-
-
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
Vde
-
7.0
5.0
-
2N2060
2N2223, 2N2223A
-
Vde
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vde, IE = 0, TA = 150·C)
(VCB = 80 Vdc, IE = 0, TA
Vde
VCEO(sus)
2N2060,2N2223,2N2223A
2N2480A*
Vde
2.0
10
20
2N2060, 2N2223,A, 2N2480A
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25'C unless otherwise noted.)
I
Min
Max
2N2060
2N2223, 2N2223A
25
15
75
(lC ~ 100 /LAde, VCE ~ 5.0 Vdc)
2N2060
2N2223, 2N2223A
2N2480A
30
25
35
90
150
(lc ~ 1.0 mAdc, VCE ~ 5.0 Vdc)
2N2060
2N2480A
40
50
120
200
(lc ~ 10 mAde, VCE ~ 5.0 Vde)
2N2060
2N2223, 2N2223A
50
50
150
200
-
0.6
1.2
50
60
-
-
15
18
Characteristic
Symbol
Unit
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 /LAde, VCE ~ 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC ~ 50 mAde, IB ~ 5.0 mAdc)
VCE(sat)
2N2060A
2N2060,2N2223,2N2223A,2N2480A
Base-Emitter Saturation Voltage
(lC ~ 50 mAde, IB ~ 5.0 mAdc)
VBE(sat)
-
-
-
Vdc
0.9
Vdc
2N2060, 2N2223, 2N2223A. 2N2480A
SMALL-SIGNAL CHARACTERISTICS
It
Current-Gain - Bandwidth Product
(lC ~ 50 mAde, VCE ~ 10 Vde,
f ~ 20 MHz)
2N2223, 2N2223A, 2N2480A
2N2060
Output Capacitance
(VCB ~ 10 Vdc, IE ~ 0, f ~ 1.0 MHz)
Input Capacitance
(VBE ~ 0.5 Vde, IC
Cobo
2N2060, 2N2060A, 2N2223, 2N2223A
2N2480A
Cibo
~
0, f
~
1.0 MHz)
2N2060
2N2480A
Input Impedance
(lC ~ 1.0 mAdc, VCB ~ 5.0 Vdc,
f ~ 1.0 kHz)
2N2060, 2N2223, 2N2223A
2N2480A
Small-Signal Current Gain
(lc ~ 1.0 mAde, VCE ~ 5.0 Vdc,
I ~ 1.0 kHz)
Output Admittance
(lc ~ 1.0 mAdc, VeE ~ 5.0 Vdc,
f ~ 1.0 kHz)
Output Admittance
(Ie ~ 1.0 mAdc, VeB
I ~ 1.0 kHz)
~
pF
85
pF
2N2060, 2N2223A, 2N2480A
Input Impedance
(lC ~ 1.0 mAde, VCE ~ 5.0 Vdc,
f ~ 1.0 kHz)
Voltage Feedback Ratio
(lC ~ 1.0 mAdc, VCB ~ 5.0 Vdc,
f ~ 1.0 kHz)
MHz
ohms
hie
1000
1000
4000
5000
20
20
30
35
-
3.0
50
40
150
200
300
ohms
hib
hrb
X 10-4
2N2223, 2N2223A
-
hIe
2N2060
2N2223, 2N2223A
2N2480A
50
hoe
-
16
/Lmhos
hob
-
0.5
/Lmhos
2N2060, 2N2480A
5.0 Vdc,
2N2223, 2N2223A
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-3
•
2N2060, 2N2223,A, 2N2480A
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted)
Characteristic
Noise Figure
(lC = 0.3 mAde, VCE = 10 Vde,
RS = 510.0,
f = 1.0 kHz, BW = 1.0 Hz)
(lC = 0.3 mAde, VCE = 10 Vde,
RS = 510.0,
f = 1.0 kHz, BW = 200 Hz)
(lC = 0.3 mAde, VCE = 10 Vde,
RS = 1.0 k.o,
f = 1.0 kHz, BW = 15.7 kHz)(2)
Svmbol
Min
Max
Unit
NF
dB
2N24BOA
-
8.0
2N2060
-
8.0
-
8.0
2N2060, 2N2223A
2N2223, 2N2480A
0.9
0.8
1.0
1.0
2N2060
2N2480
0.9
0.8
1.0
1.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio(31
(lC = 100 /LAde, VCE = 5.0 Vde)
(lC
•
=
1.0 mAde, VCE
= 5.0 Vde)
Base-Emitter Voltage Differential
(lC = 100 !LAde, VCE = 5.0 Vde)
(lC
=
1.0 mAde, VCE
=
5.0 Vde)
-
hFE1/hFE2
IVBE1-VBE21
2N2060, 2N2223A, 2N2480A
2N2223
2N2060, 2N2060A, 2N2480A
2N2480
-
-
-
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 100 !LAde, VCE = 5.0 Vde,
TA = -55°C to +125°C)
2N2060
2N2223, 2N2223A
2N2480A
6.(VBE1-VBE21
6.T
mVde
5.0
15
5.0
10
/LVrC
-
10
25
15
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle", 2.0%.
(2) Amplifier: 3.0 dB points at 25 Hz and 10 kHz with a roll-off of 6.9 dB per oetave.
(3) The lowest hFE reading is taken as hFE1 for this ratio.
FIGURE 1 -
FIGURE 2 -
DC CURRENT GAIN versus COLLECTOR CURRENT
"ON" VOLTAGES
1.4
120
1.2
1.0
zl00
ii)
!z
o
~ 0.8 -
~
~
./
~
80
"-
60
if!
'";:'~!'
r-.
VaE(lat) @ Idla = 10
0.6
'" 40
:> 0.4
20
0.2
=VCE(sat) @ Ic~a = 10
-
V
./
1/
o
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (MA)
100
300
1.0
10
100
IC, COLLECTOR CURRENT (MA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-4
500
2N2453,A
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
2N2453 2N2453A
VCEO
30
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
50
mAdc
Collector Current -
Continuous
50
Vdc
80
Vdc
One Die Both Die
Total Device Dissipation @ TA
Derate a bove 25°C
= 25°C
Po
200
1.14
300
1.71
mW
mWfC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
600
3.43
1200
6.86
mW
mWfC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
1 Collector
Unit
Collector-Emitter Voltage
7 Collector
i.~ B:s:EQ
3 Emitter
5 Emitter
DUAL
AMPLIFIER TRANSISTOR
NPNSIUCON
°c
Refer to 2N2920 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
30
50
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
(lC = 10 mAdc, IB = 0)
VCEO(sus)
2N2453
2N2453A
Collector-Base Breakdown Voltage
(lC = 10 !lAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 !lAde,lc = 0)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 50 Vdc, IE = 0, TA
60
BO
V(BR)EBO
ICBO
=
Vdc
V(BR)CBO
2N2453
2N2453A
150°C)
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
lEBO
Vde
7.0
-
-
-
Vdc
!lAdc
0.005
10
0.002
!lAdc
ON CHARACTIERISTICS
DC Current Gain
(lC = 10 !lAdc, VCE = 5.0 Vdc)
(lC = 10 !lAdc, VCE = 5.0 Vdc, TA = -55°C)
(lC = 1.0 mAdc, VCE = 5.0 Vdc)
(lC = 1.0 mAdc, VCE = 5.0 Vdc, TA = -56°C)
hFE
80
40
150
75
600
-
-
Collector-Emitter Saturation Voltage
(lC = 5.0 mAdc, IB = 0.5 mAde)
VCE(sat)
-
1.0
Vde
Base-Emitter Saturation Voltage
(lC = 5.0 mAde, IB = 0.5 mAde)
VBE(sat)
-
0.9
Vde
fr
60
-
MHz
Cobo
-
8.0
pF
Cibo
-
10
pF
hie
5.0
-
kohms
hib
20
30
Ohms
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 5.0 mAde, VCE = 10 Vdc, f
= 30 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
140 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
140 kHz)
Input Impedance
(lC = 1.0 mAde, VCE
=
5.0 Vdc, f
=
1.0 kHz)
Input Impedance
(lC = 1.0 mAde, VCB
=
5.0 Vdc, f
=
1.0 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-5
•
2N2453,A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
h re
Voltage Feedback Ratio
(lc = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz)
hrb
Small-Signal Current Gain
(lc = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(lc = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
hoe
Output Admittance
(lC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz)
hob
Noise Figure
(lC = 10 I£Adc, VCE = 5.0 Vdc, RS = 10 k!}, f = 1.0 kHz)
NF
Min
Max
Unit
X 10-4
-
6.0
-
5.0
150
600
5.0
30
-
0.2
-
7.0
X 10-4
"mhos
"mho
dB
MATCHING CHARACTERISTICS
•
DC Current Gain Ratio(2)
2N2453A
(lC = 100 I£Adc, VCE = 5.0 Vdc)
(lc = 1.0 mAdc, VCE = 5.0 Vdc)
-55°C
to
+
125°C)
(lc = 1.0 mAdc, VCE = 5.0 Vdc, TA =
Base-Emitter Voltage Differential
(lC = 10 I£Adc, VCE = 5.0 Vdc)
(lc = 1.0 mAdc, VCE = 5.0 Vdc)
hFE1/hFE2
0.90
0.90
0.85
IVBE1-VBE21
Base-Emitter Voltage Differential Gradient
(lC = 10 I£Adc, VCE = 5.0 Vdc, TA = -55°C to +125°C) 2N2453
2N2453A
A(VBE1-VBE2)
ATA
(1) Pulse Test: Pulse Width", 300 "s, Duty Cycle'" 2.0%.
(2) Lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-6
1.0
1.0
1.0
mVdc
-
-
3.0
5.0
-
10
5.0
"Vt'C
2N2480A For Specifications, See 2N2060 Data.
2N2639
thru
2N2644
MAXIMUM RATINGS
CASE 654-07, STYLE 1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
30
mAde
Collector Current -
Continuous
One Die
Both Die
= 25·C
Po
300
1.72
600
3.43
mW
mWrC
Total Device Dissipation @ TC
Derate above 25·C
= 25·C
Po
600
3.43
1200
6.87
mW
mWrC
TJ, Tstg
-65 to +200
7 Collector
~a~ B:~
3 EmItter
Total Device Dissipation @ TA
Derate above 25·C
Operating and Storage Junction
Temperature Range
1 Collector
5 Emitter
DUAL
AMPLIFIER TRANSISTOR
NPNSIUCON
·C
Refer to 2N2913 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25·C unless otherwise noted.)
Symbol
Min
Max
Unit
VCEO(sus)
45
-
Vde
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
ICEO
-
0.010
pAde
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
(VCB = 45 Vde, IE = 0, TA
ICBO
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( 1)
(lC = 10 mAde, IB = 0)
=
+150·C)
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
pAde
0.010
10
0.Q10
pAde
ON CHARACTERISTICS(I)
DC Current Gain
(lC = 10 pAde, VCE
hFE
= 5.0 Vde)
= 5.0 Vde, TA =
2N2639, 2N2640, 2N2641
2N2642, 2N2643, 2N2644
50
100
2N2639, 2N2640, 2N2641
2N2642, 2N2643, 2N2644
10
20
(lC
=
10 pAde, VCE
(lC
=
100 pAde, VCE
= 5.0 Vde)
2N2639, 2N2640, 2N2641
2N2642, 2N2643, 2N2644
55
110
(lC
=
1.0 mAde, VCE
=
2N2639, 2N2640, 2N2641
2N2642,2N2643,2N2644
65
130
-55·C)
5.0 Vde)
300
300
-
-
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IS = 0.5 mAde)
VCE(sat)
-
1.0
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
VSE(sat)
0.6
1.0
Vde
tr
40
-
MHz
Cobo
-
8.0
pF
hib
25
32
ohms
hrb
-
600
X 10-6
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vde, f
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
= 20 MHz)
1.0 MHz)
Input Impedance
(lC = 1.0 mAde, VCB
=
5.0 Vde, f
=
1.0 kHz, IE
=
-1.0 mAl
Voltage Feedback Ratio
(lC = 1.0 mAde, VCB
=
5.0 Vde, f
=
1.0 kHz, IE
=
-1.0 mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-7
•
2N2639 thru 2N2644
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Symbol
Characteristic
Small-Signal Current Gain
(lC = 1.0 mAde, VCB = 5.0 Vdc, f
Output Admittance
(lC = 1.0 mAde, VCB
= 1.0 kHz)
Min
Max
65
130
600
600
2N2639, 2N2640, 2N2641
2N2642, 2N2643, 2N2644
hob
= 5.0 Vdc, f = 1.0 kHz, IE = -1.0 rnA)
Noise Figure
(lC = 10 ~dc, VCB = 5.0 Vdc,
RS = 10 ill, Bandwidth = 10 Hz to 15 kHz)
NF
Unit
-
hfe
-
1.0
~mhos
4.0
dB
0.9
0.8
1.0
1.0
-
5.0
10
-
10
20
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 10 ~dc, VCE = 5.0 Vdc)
Base-Emitter Voltage Differential
(lC = 10 ~dc, VCE = 5.0 Vdc)
•
-
hFE1/hFE2
2N2639, 2N2642
2N2640, 2N2643
IVBE1-VBE21
2N2639, 2N2642
2N2640, 2N2643
Base-Emitter Voltage Differential Gradient
(lC = 10~dc, VCE = 5.0Vdc, TA = -55to +125°C)
2N2639. 2N2642
2N2640, 2N2643
a(VBE1-VBE2)
aTA
(1) Pulse Test: Pulse Wid1h .. 300 ~s, Duty Cycle .. 2.0%.
(2) The lowest hFE reading is taken as hFE 1 for this test.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-8
mVdc
~vrc
-
2N2652,A
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
60
Vde
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
500
mAde
Collector Current -
Continuous
One Die
Both Die
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0.3
1.72
0.6
3.43
Watt
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.0
5.7
2.0
11.4
Watts
mWrC
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
1 Collector
7 Collector
;a() B:()
3 Emitter
5 Emitter
DUAL
AMPLIFIER TRANSISTOR
NPNSILICON
°e
Refer to 2N2060,A for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise
noted.)
Symbol
Characteristic
Min
Max
-
Vde
-
Vdc
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lC = 20 mAde, IB = 0)
(Ie = 100
~de,
IE = 0)
(IE = 100 pAdc, IC = 0)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 50Vdc,IE = 0, TA = 150°C)
Emitter Cutoff Current
2N2652
(VBE = 5.0 Vdc, IC = 0)
V(BR)CEO
60
V(BR)CBO
100
V(BR)EBO
7.0
ICBO
-
lEBO
-
Vdc
0.Q10
15
pAdc
0.010
pAdc
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 100 pAdc, VCE = 5.0 Vde)
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(lC = 1.0 mAdc, VCE = 5.0 Vdc, TA = -WC)
hFE
35
50
15
200
Collector-Emitter Saturation Voltage (lC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
-
1.2
Vdc
Base-Emitter Saturation Voltage
VBE(sat)
-
0.9
Vdc
60
-
MHz
15
pF
(lC = 50 mAde, IB = 5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product (lC = 50 mAde, VCE = 10 Vdc, 1= 20 MHz)
f]-
(VCB = 10 Vdc, IE = 0, 1= 1.0 MHz)
Cobo
(VBE = 0, 0.5 Vdc, IC = 0, I = 1.0 MHz)
Cibo
-
(IC = 1.0 mAdc, VCE = 5.0 Vdc, 1= 1.0 kHz)
hie
1.0
Input Impedance (lC = 1.0 mAdc, VCB = 5.0 Vdc, 1= 1.0 kHz)
hib
Small-Signal Current Gain
hfe
hoe
NF
Output Capacitance
Input Capacitance
Input Impedance
Output Admittance
(lC = 1.0 mAdc, VCE = 5.0 Vdc, 1= 1.0 kHz)
(lC = 1.0 mAdc, VCE = 5.0 Vdc, 1= 1.0 kHz)
Noise Figure
(lC = 0.3 mAde, VCE = 10 Vdc, RS = 610 ohms, B. W. = 1.0 Hz, 1= 1.0 kHz)
85
pF
10.5
kohms
20
35
ohms
50
300
-
-
50
"mhos
-
8.0
dB
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 100 pAdc, VCE = 5.0 Vdc)
(lc = 1.0 mAdc, VCE = 5.0 Vdc)
Base-Emitter Voltage Differential
2N2652
2N2652
(lC = 100 pAdc, VCE = 5.0 Vdc)
(lC = 1.0 mAdc, VCE = 5.0 Vdc)
Base-Emitter Voltage Differential Gradient
(lC = 100 pAdc, VCE = 5.0 Vdc, TA = -55 to + 125°C)
hFE1/hFE2
IVBE1-VBE21
d(VBE1-VBE2)
dTA
(1) Pulse Test: Pulse Wiclth '" 300 /AS, Duty Cycle'" 2.0%.
(2) The lowest 01 the two hFE readings is taken as hFEl lor the purpose 01 measurement.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-9
-
0.85
0.85
1.0
1.0
-
3.0
3.0
mVdc
10
"vrc
•
2N2721
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vde
Collector-Base Voltage
VCBO
80
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
40
mAde
Rating
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
25°C
Po
Operating and Storage Junction
Temperature Range
1 Collector
7 Collector
3 Emitter
5 Emitter
;.:© B:'~
One Die
Both Die
0.3
1.71
0.6
3.4
Watt
mWrC
AMPLIFIER TRANSISTOR
0.6
3.4
1.2
6.8
Watt
mWrC
NPN SILICON
TJ, Tstg
-65 to +200
DUAL
°c
Refer to 2N2060 lor graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CEO
60
-
Vde
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
ICEO
-
10
nAde
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
(VCB = 60 Vde, IE = 0, TA = 150°C)
ICBO
-
0.01
10
!LAde
lEBO
-
10
nAde
hFE
30
35
42
120
-
Collector-Emitter Breakdown Voltage(l)
(lC = 10mAde,IB = 0)
Emitter Cutoff Current (VEB = 5.0 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 !LAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(IC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
VBE(sat)
0.65
1.0
Vde
0.85
Vde
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product (lC = 10 mAde, VCE = 10 Vde, 1= 20 MHz)
fr
80
Cobo
-
6.0
pF
Input Impedance (IE = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
hib
25
32
ohms
Voltage Feedback Ratio
hrb
-
500
X 10-6
hie
30
200
hob
-
1.0
Output Capacitance
(VCB = 5.0 Vde, IE = 0, I = 1.0 MHz)
(IE = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
Small-Signal Current Gain
Output Admittance
(lC = 1.0 mAde, VCE = 5.0 Vde, 1= 1.0 kHz)
(IE = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
~mhos
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 100 !LAde, VCE = 5.0 Vde)
hFE1/hFE2
Base-Emitter Voltage Differential
(lC = 100 !LAde, VCE = 5.0 Vde)
IVBE1-VBE21
0.8
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 100 !LAde, VCE = 5.0 Vde, TA = -55 to +25"C)
1.0
mVde
-
10
-
1.6
-
2.0
mV
Il.(VBE1-VBE2)
(lC = 100 !LAde, VCE = 5.0 Vde, TA = +25 to + 125"C)
(1) Pulse Test: Pulse Width", 300 ~, Duty Cycle'" 2.0%.
(2) The lower of the two hFE readings is taken as hFEl for the purpose of measurement.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-10
2N2722
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
40
mAde
Collector Current -
Continuous
One Die
Both Die
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
0.3
1.7
0.6
3.4
Watt
mWrC
Total Device Dissipation @ TC
=
Po
0.6
3.4
1.2
6.B
Watts
mWrC
25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
7/~-"-()-~~1
3 Emitter
5 Emitter
DUAL
AMPLIFIER TRANSISTOR
NPNSILICON
°c
Refer to 2N2920 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage (lC = 10 pAde, IE = 0)
V(BR)CEO
45
-
V(BR)CBO
45
-
Vde
2.0
nAde
0.001
1.0
pAde
1.0
nAde
250
-
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
ICEO
-
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30Vde, IE = 0, TA = 150°C)
ICBO
-
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 pAde, VCE = 5.0 Vde)
(lC = 10 pAde, VCE = 5.0 Vde)
(lC = 0.1 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
(lc = 10 mAde, IB = 0.5 mAde)
(lC = 10 mAde, IB = 0.5 mAde)
VCE(sat)
50
100
125
-
VBE(sat)
0.65
tr
100
1.0
Vde
0.B5
Vde
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product (lC = 10 mAde, VCE = 10 Vde, I = 20 MHz)
Output Capacitance
Input Impedance
(VCB = 5.0 Vde, IE = 0, I = 1.0 MHz)
(IE = 1.0 mAde, VCB = 5.0 Vde, 1= 1.0 kHz)
Voltage Feedback Ratio
(IE = 1.0 mAde, VCB = 5.0 Vde, 1= 1.0 kHz)
Small-Signal Current Gain
(IE = 0.1 mAde, VCE = 5.0 Vde, I = 1.0 kHz)
Cobo
-
6.0
pF
hib
25
32
ohms
X 10-6
hrb
-
600
hie
100
700
-
1.0
"mhos
NF
-
4.0
dB
DC Current Gain Ratio(2)
(lC = 1.0 pAde, VCE = 5.0 Vde)
hFE1/hFE2
0.9
1.0
-
Base-Emitter Voltage Differential
(lC = 10 pAde, VCE = 5.0 Vde)
IVBE1- VBE21
-
5.0
mVde
Output Admittance
(IE = 1.0 mAde, VCB = 5.0 Vde, 1= 1.0 kHz)
Noise Figure (lC = 10 pAde, VCE = 5.0 Vde, RS = 10 k!l, I = 10 Hz to 15.7 kHz)
hob
MATCHING CHARACTERISTICS
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 10 pAde, VCE = 5.0 Vde, TA = -55 to +25°C)
(lC = 10 pAde, VCE = 5.0 Vde, TA = +25 to + 125°C)
:>
0.2
0.2
VCE(..tl @ leila
10
VCE(s.tl @ leila
o
o
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (MAl
100
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (MAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-16
10
100
2N3043
thru
2N3045
2N3048
MAXIMUM RATINGS
CASE 610A-04, STYLE 1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
30
mAde
Collector Current -
Continuous
IC
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Total Device Dissipation @ TC
Derate above 25'C
=
Po
25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
=
One Die
Both Die
250
1.67
350
2.33
mW
mWI'C
0.7
4.67
1.4
9.33
Watts
mWI'C
-65 to +200
~:Oll'cto,
7CoII.cto,
. i.() ~()
3 Emitter
5 Emitter
DUAL
AMPLIFIER TRANSISTOR
NPNSILICON
'C
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
45
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
(VCB = 45 Vde, IE = 0, TA
ICBO
=
+ 150'C)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
-
-
pAde
0.010
10
0.010
pAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 pAde, VCE
(lC
=
=
1.0 mAde, VCE
hFE
5.0 Vde)
=
5.0 Vde)
-
2N3043, 2N3044, 2N3045
2N3048
100
50
300
200
2N3043, 2N3044, 2N3045
2N3048
130
65
-
VCE(sat)
-
1.0
Vde
VBE
0.6
O.B
Vde
t,-
30
-
MHz
Cobo
-
B.O
pF
3.2k
1.6k
19k
13k
130
65
600
400
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
Base-Emitter On Voltage
(lC = 10 mAde, VCE = 5.0 Vde)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vde, f
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
Input Impedance
(lC = 1.0 mAde, VCE
20 MHz)
1.0 MHz)
=
1.0 kHz)
2N3043, 2N3044, 2N3045
2N3048
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vde, f
=
1.0 kHz)
2N3043, 2N3044, 2N3045
2N3048
Output Admittance
(Ie = 1.0 mAde, VCE
=
1.0 kHz)
=
5.0 Vde, f
hfe
hoe
NF
= 5.0 Vde,
RS
=
Ohms
hie
5.0 Vde, f
Noise Figure
(lC = 10 pAde, VCE
=
=
10 kohms, Bandwidth
=
10 Hz to 15.7 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-17
-
"",hos
100
70
5.0
dB
•
2N3043 thru 2N3045, 2N3048
ELECTRICAL CHARACTERISTICS (continuedl.{TA = 25·C unless otherwise noted.1.
I
Characteristic
Symbol
Min
Max
0.9
0.8
1.0
1.0
Unit
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)'
(lC = 10 pAdc, VCE = 5.0 Vdc)
hFE1/hFE2
2N3043
2N3044
Base-Emitter Voltage Differential
(lC = 10 pAdc, VCE = 5.0 Vdc)
IVBE1-VBE21
2N3043
2N3044
Base-Emitter Voltage Differential Temperature Gradient
(lC = 10 pAdc, VCE = 5.0Vdc, TA = -55to + 125·C)
.1(VBE1-VBE2)
.1TA
2N3043
2N3044
(1) Pulse Test: Pulse Width"" 300 p.o, Duty Cycle"" 2.0%.
(2) The lowest hFE reading is taken as hFE1 for this test.
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-18
-
mVdc
5.0
10
p,vrc
10
20
2N3425
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
15
Vde
1 Collector
Collector-Emitter Voltage
VCER
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
One Die
Both Die
7 Collector
i.~ B:~
3 Emitter
5 Emitter
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
0.3
1.72
0.4
2.28
Watt
mWfC
DUAL
AMPLIFIER TRANSISTORS
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
0.75
4.3
1.5
8.55
Watts
mWfC
NPN SIUCON
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
·C
Refar to MD2369.A,B for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25·C unless otherwise noted.)
Charactaristic
Symbol
Min
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 30 mAde, RBE "" 10 ohms)
VCER(sus)
20
Collector-Emitter Sustaining Voltage(l)
(lc = 10 mAde, IB = 0)
VCEO(sus)
15
VIBRICBO
40
V(BR)EBO
5.0
-
-
15
!LAde
0.025
15
!LAde
0.2
!LAde
-
-
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lC = 10 !LAde, IE = 0)
(IE = 10 !LAde, IC = 0)
Collector Cutoff Current
(VCE = 20 Vde, VEB(off) = 0.25 Vde, TA = 125·C)
ICEX
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 20 VDe, IE = 0, TA = 150·C)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
-
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.5 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vtie)
(lC = 10 mAde, VCE = 1.0 Vde, TA = -55·C)
hFE
12
30
12
120
-
0.4
0.5
0.85
0.9
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 7.0 mAde, IB = 0.7 mAde, TA = - 55·C to + 125·C)
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
0.7
IT
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 7.0 mAde, IB = 0.7 mAde, TA = -55·C)
Vde
-
Vde
SMALL-8IGNAL CHARACTERISTICS
300
-
Cobo
-
6.0
Ciba
-
9.0
pF
hie
20
-
-
Re(hie)
-
50
Ohms
ts
-
40
ns
Turn-On Time
(VCC = 3.0 Vde, VEB(offt = 2.0 Vde, IC = 10 mAde, IBI = 3.0 mAde)
ton
-
50
ns
Turn-Off Time
(VCC = 3.0 Vde, IC = 10 mAde, IBI = 3.0 mAde, IB2 = 1.0 mAde)
toff
-
90
ns
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(lC = 20 mAde, VCE = 10 Vde, I = 100 MHz)
(VCB = 10 Vde, IE = 0, I = 140 kHz)
(VBE = 0.5 Vde, IC = 0, I = 140 kHz)
Small-Signal Current Gain
(lC = 10 mAde, VCE = 1.0 Vde, 1= 1.0 kHz)
Real Part 01 Input Impedance
(lc = 10 mAde, VCE = 10 Vde, 1= 300 MHz)
MHz
pF
SWITCHING CHARACTERISTICS
Storage Time
(lC = 10 mAde, IBI = 10 mAde, IB2 = 10 mAde)
(1) Pulse Test: Pulse Width"" 300 I'S, Duty Cycle"" 1.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-19
•
2N3726
2N3727
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IB
100
mAde
300
mAde
Rating
Base Cu rrent
Collector Current -
•
Continuous
IC
One Die
Both Ole
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
400
2.29
500
2.86
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
0.85
4.85
1.4
8.0
Watt
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
°c
Collector1 to Collector2 Voltage
Voltage rating any lead to case
VC1 VC2
±200
±200
Vde
Vde
CASE 654-07, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to MD2905,A for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
45
-
Vde
Collector-Base Breakdown Voltage
(lc = 0.01 mAde, IE = 0)
V(BR)CBO
45
-
Vde
Emitter-Base Breakdown Voltage
(IE = 0.Q1 mAde, IC = 0)
V(BR)EBO
5.0
-
Vde
-
-
10
10
nAde
!£Ade
-
0.1
!£Ade
80
120
135
115
350
-
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
ICBO
=
150°C)
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC = 0.Q1 mAde, VCE = 5.0 Vde)
(lC = 0.1 mAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vde)
(lC = 50 mAde, VCE = 5.0 Vde)(1)
hFE
-
-
Collector-Emitter Saturation Voltage(1)
(lc = 50 mAde, IB = 2.5 mAde)
VCE(sat)
-
0.25
Vde
Base-Emitter Saturation Voltage(1)
(IC = 50 mAde, IB = 2.5 mAde)
VBE(sat)
-
1.0
Vde
60
200
600
Cobo
-
8.0
pF
Cibo
-
30
pF
hie
-
11.5
kohm
h re
-
1500
X 10-6
hfe
135
420
SMALL-5IGNAL CHARACTERISTICS
fr
Current-Gain - Bandwidth Product(2)
(lC = 1.0 mAde, VCE = 10 Vde, f = 20 MHz)
(lc = 50 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
Input Capacitance
(VEB = 0.5 Vde, IC
=
0, f
=
= 0, f =
MHz
1.0 MHz)
1.0 MHz)
Input Impedance
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
Voltage Feedback Ratio
(lc = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
Small-Signal Current Gain
(lc = 1.0 mAde, VCE = 10 Vde, f
=
1.0 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-20
-
2N3726,2N3727
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Output Admittance
(lC = 1.0 mAde, VCE = 10 Vdc, 1= 1.0 kHz)
Characteristic
hoe
-
80
/'mhos
Noise Figure
(lc = 30 ~dc, VCE = 5.0 Vdc, Rs = 10 kohms, 1= 1.0 kHz, B.w. = 200 Hz)
NF
-
4.0
dB
0.9
1.0
-
-
5.0
2.5
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC = 0.1 mAde to 1.0 mAde, VCE = 5.0 Vdc)
hFE1/hFE2
Base-Emitter Voltage Differential
(lC = 0.1 mAde to 1.0 mAde, VCE = 5.0 Vdc)
IVBE1-V BE21
2N3726
2N3727
Base-Emitter Differential Change Due to Temperature
(lC = 0.1 mAde to 1.0 mAde, VCE = 5.0 Vdc, TA = -55°C to +25°C)
(lC = 0.1 mAde to 1.0 mAde, VCE = 5.0Vdc, TA = + 25°C to +125°C)
!'
~
6 0.4
>
~ 0.4
:>
:>
0.2
0.2
o'"
0.01
t::: VCE (satl @ Iello - 10
III
0.1
o
1.0
10
IC. COLLECTOR CURRENT (MAl
100
0.01
0.1
1.0
10
IC. COLLECTOR CURRENT (MAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-24
100
"
2N3838
CASE 610A-04, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector 1 to Collector 2 Voltage
Voltage Rating any Lead to Case
VC1C2
±120
±120
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAde
Collector Current -
Continuous
One Die
Both Die
Po
0.25
1.67
0.35
2.34
Watt
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
0.7
4.67
1.4
9.34
Watts
-65 to +200
TJ, Tstg
=
ELECTRICAL CHARACTERISTICS (TA
9
,-$ '-@
2
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
~1
4
COMPLEMENTARY DUAL
AMPLIFIER TRANSISTOR
NPN/PNP SILICON
°c
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V1BR)CEO
40
VCEO(NL)t
40
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
Collector-Emitter Nonmatehing Voltage
(lC(on) = 600 mAde, 'B(on) = 120 mAde, IB(off) = 0)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
(IC
= 10 !-
~
80
c
60
~
250 C
r--
100
1'l
u
12
VCE • 1.0 V
fJ .125 0 c
.......
~
'"
<0
w
"'!:;'"
......
-
r--- _.-55 C
0
40
-TJ'25 0 C
'">
:>
r-...
10
08
f--
~
06 =="VBElsa,)@lcIIB' 10
04
-
02
-VCE(",)@ICIIB' 10
20
10
20
30
50
70
100
200
300
10
500 700 1.0 k
20
30
50
70
100
200
300
IC. COLLECTOR CURRENT (rnA)
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-35
500 700 1.0 k
•
2N6502
FIGURE 4 - TEMPERATURE COEFFICIENTS
FIGURE 3 - COLLECTOR SATURATION REGION
~
1.
0
;
I
1\
o
~
~
~
1\
1\
\
i
~
I
+2.0
"APPLIES FOR IC/IB-
~
50
100
200
,
-2.0
-2.5
500
10
20
30
lB. aASE CURRENT (mAl
•
F""
l-
-1.5 ~·VBFORVBE
~
300mA
20
-0.5
>-
500mA
1
10
I..·J......
.....
8w
I I
.........
r--r--
.........
+1.0
$U +0.5 ~"'VC FOR VCE(,,'I
50
70
100
200
300
500 700 1.0 k
IC. COLLECTOR CURRENT (mAl
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 6 - CAPACITANCE
FIGURE 5 - CURRENT-GAIN - BANOWIDTH PRODUCT
VCE .. 10 Vdc
f -100 MHz
TJ' 25°C
>-
'"'"
~ 300
1=
o
~
..........
..........
V
200
z
100
70
.......
...
~
"-
'"z
«
~
;C 100
r--
20
10
I'--
..;
'?
>-
7.0
~
70
.t:'
50
4.0
a
~Cib
30
>U
i-"
~
z
TJ' 25°C
50
-
Cob
5.0
6.0
10
20
40
60
100
200
3.0
01
400
0.5
0.2
IC. COLLECTOR CURRENT (mAl
100
200
Ic/lo'10
TJ' 25°C
~
100
50
!
w
"
;=
20
]:
...
I'.
~~
j.-"
'"
20
30
50
70
100
......
200
100
300
r--.
V'"
t-....
V 1....V/ V
10
500 700 1.0 k
TJ - 25°C
's@lc/la-20
-, I~~IB '10
r--..
30
10
10
50
20
vc~, 10 ~d~
.....
50
20
Id @VBE(olfl'O V
~~~(~I~b -v~~a Vdc
3.0
20
10
If ~ Ic/lo - 10
Ic/lo - 20
;=
10
7.0
50
5.0
I
"-
70
.,@VCC·10Vdc
VCC' 30 Vdc
30
2.0
FIGURE 8 - TURN-OFF TIME
FIGURE 7 - TURN-ON TIME
200
1.0
VR. REVERSE VOLTAGE (VOLTSI
20
t..t30
50
70 100
200
300
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-36
500 700 1.0 k
2N6502
n
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
5.
8V
Vin
FIGURE 10 - COLLECTOR CUTOFF CURRENT
1000
;;-
+30 V
60
....e
.:;
...
VBE(off) - - - - --0
1li 100
Output
~
~
Ir';;; 100s
10
0
PW:; 100kn
Cin'" 12 pF
RISE TIME", 5 ns
20kn
200n
OUTPUT
50n
20kn
OUTPUT
SCOPE
Rin > 100 k!l
Cin'" 12 pF
RISE TIME", 5 ns
50n
Figure 3. toff Test Circuit
Figure 2. ton Test Circuit
Table 2. JTX. JTXV 1000/0 Processing Steps
JTX
JTXV
-
100%
Internal Visual (Mil-Std-750, Method 2072)
High Temperature Storage (Mil-Std-750, Method 1032)
100%
100%
Thermal Shock (Mil-Std-750, Method 1051 Condo F")
100%
100%
Constant Acceleration (Mil-Std-750, Method 2006, 20 KGs, Vl)
100%
100%
Hermetic Seal (Fine + Gross Leak) (Mil-Std-750, Method 1071, Condo G or H)""
100%
100%
READ Electrical Parameters (Group A)
100%
100%
High Temperature Reverse Bias (Mil-Std-750, Method 1039, Condo A)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Power Burn-In (Mil-Std-750, Method 1039, Condo B)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
*T(LOW) = - 55"C
**Cond. G, Fine leak"" 1 x 10- 7 ATM. CC/sec.
Table 3. Simplified Hi-Rei Product Flow
JAN
JTX
JTXV
Commercial
Product
Commercial
Product
100%
Pre Cap Visual
+
Group A, B, C
Sample
Tt
Ship
+
100%
Test
+
+
100%
Test
+
Group A, B, C
Sample
Test
Group A. B, C
Sample
Test
t
Ship
Ship
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-39
t
•
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
50
Vdc
Collector-Base Voltage
VCB
75
Vdc
Emitter-Base Voltage
VEB
6.0
Vdc
Collector-Emitter Voltage
Collector Current -
Continuous
M559-01
Total Power Dissipation @ TA
Derate above 25°C
=
25°C
M559-02
Total Power Dissipation @ TA
Derate above 25°C
=
25°C
•
1.4
Q 1.2
~
in
!!1
1
~
0.8
~
0.6
rP 0.4
0.2
-
Total
Transistor
Device
0.525
3.0
1.5
8.57
Watts
mW/"C
0.14
0.8
0.4
2.29
Watts
mW/"C
M559-01
CERAMIC
CASE 632-02
STYLE 1
Po
-65 to +200
TJ, Tstg
°c
14
1~
I
I
1.8
~
Each
Po
Operating and Storage Junction
Temperature Range
~ 1.6
mAde
800
IC
M559-01
M559-02
QUAD
TRANSISTORS
r-... ~fOI ToiAl PA~KAGE
NPN SILICON
1""'-
........,
-M551~02 T~TAl P~CKAGEI
.......
",
\" ~1 EA1H TRA7SISTO~
r-M5J9.02EIc~
20
40
M559-02
CERAMIC
CASE 601-04
STYLE 1
Table 1. Product Classifications
~
60
80
100 120 140
TC, CASE TEMPERATURE 1°C)
160
t--..
180
200
JAN JTX JTXV -
Controlled Lot with Sample Environmental and Life Testing
100% Processing Plus Sample Environmental and Life Testing
Same as JTX Plus 100% Internal Visual Inspection
Figure 1. Power Temperature Derating Curve
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
50
-
Vdc
V(BR)CBO
75
6.0
-
Vdc
V(BR)EBO
10
10
nAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltagell)
(lC = 10 mAde, IB = 0)
=
Collector-Base Breakdown Voltage (lC
Emitter-Base Breakdown Voltage (IE
=
10 "Adc, IE
10 "Adc, IC
=
=
0)
0)
Collector Cutoff Current
(IE = 0, VCB = 60 Vdc)
(IE = 0, VCB = 60 V, TA
Emitter Cutoff Current (lC
ICBO
= 150°C)
= 0, VCB =
4.0 Vde)
lEBO
-
10
Vdc
"A
nAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 0.1 mA, VCE = 10 Vde)
(lc = 1.0 mA, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 150 mAde, VCE = 10 Vde)
(lC = 500 mAde, VCE = 10 Vde)
(lC = 10 mA, VCE = 10 V, TA = -55°C)
hFE
50
75
100
100
30
35
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
325
300
Vde
-
0.3
1.0
0.6
-
1.2
2.0
250
800
MHz
-
8.0
pF
25
pF
-
Vde
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC = 20 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance (VCB
Input Capacitance (VBE
=
=
fr
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
10 Vdc, IE
0.5 Vde, IC
Cobo
Cibo
MOTOROLA SMAl-L-SIGNAL SEMICONDUCTORS
5-40
M559-01, M559-02
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted)
I
Symbol
Min
Max
Unit
Turn-On Time
(VCC = 30 Vdc, VBE(off) = 0.5 Vdc,
Ie = 150 mAdc, IBl = 15 mAdc) (Figure 2)
ton
-
35
ns
Turn-Off Time
(Vec = 30 Vdc, IC = 150 mAde,
IBl = IB2 = 15 mAdc) (Figure 3)
toff
-
300
ns
Characteristic
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle = 2.0%.
GENERATOR RISE TIME", 2 ns
SCOPE
SCOPE
PW '" 200 ns
Rin> 100 kO
DUTY CYCLE = 2%
Cin'" 12 pF
RISE TIME", 5 ns
Rin > 100 ill
Cin'" 12 pF
RISE TIME", 5 ns
20kO
20 ill
16Vn
OUTPUT
OUTPUT
!d---~V
600
500
Figure 3. toff Test Circuit
Figure 2. ton Test Circuit
Table 2. JTX. JTXV 100",(, Processing Steps
JTX
JTXV
-
Internal Visual (Mil-Std-750, Method 2072)
100%
High Temperature Storage (Mil-Std-7S0, Method 1032)
100%
100%
Thermal Shock (Mil-Std-750, Method 10S1 Condo F*)
100%
100%
Constant Acceleration (Mil-Std-750, Method 2006, 20 KGs, Yl)
100%
100%
100%
100%
Hermetic Seal (Fine
+ Gross Leak) (Mil-Std-750, Method 1071, Condo G or H)'*
READ Electrical Parameters (Group A)
100%
100%
High Temperature Reverse Bias (Mil-Std-750, Method 1039, Condo A)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Power Burn-In (Mil-Std-7S0, Method 1039, Condo B)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
*T(LOWI = - 55'C
**Cond. G, Fine Leak
=
1 x 10- 7 ATM. CC/sec.
Table 3. Simplified Hi-Rei Product Flow
JAN
JTX
JTXV
Commercial
Product
Commercial
Product
100%
Pre Cap Visual
+
+
+
Group A. B, C
Sample
Test
100%
Test
+
Group A, B, e
Sample
Test
Group A, B, C
Sample
Test
Ship
Ship
Ship
•
t
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-41
100%
Test
+
•
•
MAXIMUM RATINGS (@ 25°C Free-Air Temperature unless otherwise noted)
Rating
Symbol
MAD130
MAD1103
MAD1107
MAD1108
Unit
VRM
40
50
50
Vdc
VR
25
25
40
Vdc
Peak Reverse Voltage(l)
Steady-State Reverse
MADI30, MADl103
MADII07, MADl108
Voltage
Peak Forward Current at
(or below) 25°C Free-Air
Temperature(1 )
•
~'
'0'
,- ,.
rnA
500
IFM
14'
MADll07F
CASE 607-05
MADll03F
CASE 606-04
Continuous Forward
Current at (or below)
25°C Free-Air
Temperature(2)
IF
400
rnA
Continuous Power
Dissipation at (or below)
25°C Free-Air
Temperature(3)
PD
600
mW
Operating Free-Air
Temperature Range
TA
-65to +125 -65 to +125 -55to +150
°C
Storage Temperature
Range
Tstg
-65 to +150 -65 to + 150 -65to +175
°C
260
°C
,
Lead Temperature 1116"
,
MAD130C
MAD130P
MAD1103C, MAD1107C MAD1103P, MADll07P
CASE 632-02
CASE 646-06
'6_'6_~~~
,
,
MADll08C
CASE 620-02
MADll08P
CASE 648-06
MAD110BF
CASE 650-02
MONOLITHIC DIODE ARRAY
from Case for 10
Seconds
NOTES:
1. These values apply for PW '" 100 /LS, duty cycle'" 20%.
2. Derate linearity to + 125°C temperature at rate of 3.2 mAl"C.
3. Derate linearity to + 125°C temperature at rate of 6.0 mWfC.
PACKAGE OPTIONS
CERAMIC
C Suffix
Pin
Connection
Ref. No.
MAD130
Dual 10-Diode Array
3
MADll03
Dual 8-Diode Array
MAD1107
Dual 8-Diode Array
MAD1108
8-Diode Array
Device
PLASTIC
P Suffix
FLAT CERAMIC
F Suffix
Case
Pin
Connection
Ref. No.
Pin
Connection
Ref. No.
Case
632-02
3
646-06
-
5
632-02
5
646-06
4
606-04
2
632-02
2
646-06
2
607-05
1
620-02
1
648-06
1
650-02
Case
-
ELECTRICAL CHARACTERISTICS (@ 25°C Free-Air Temperature)
Limit
Symbol
Characteristic
Reverse Breakdown Voltage(l)
(lR ~ 10 !LA)
Static Reverse Current
(VR ~ 25 V)
(VR ~ 40 V)
Min
Max
Unit
V(BR)
MAD130
MADll031110711108
40
50
-
-
0.5
0.5
0.1
-
1.1
1.5
-
5.0
!LA
IR
MAD130
MADII 03111 07
MADll08
Static Forward Voltage
(IF ~ 100 mAl
(IF ~ 500 mA)(2)
VF
Peak Forward Voltage(3)
(IF ~ 500 rnA)
VFM
Vdc
Vdc
Vdc
NOTES:
1. This parameter must be measured using pulse techniques. PW ~ 100 /LS, duty cycle", 20%.
2. This parameter is measured using pulse techniques. PW ~ 300 /Ls, duty cycle'" 2.0%. Read time is 90 /Ls from the leading edge of the
pUlse.
3. The initial instantaneous value is measured using pulse techniques. PW ~ 150 ns, duty cycle'" 2.0%, pulse rise time", 10 ns. The
total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-42
MAD130, MAD1103, MAD1107, MAD1108
SWITCHING CHARACTERISTICS (@ 25"C Free-Air Temperalure)
Characteristic
Forward Recovery Time. Figure 3
(IF = 500 rnA)
Reverse Recovery Time. Figure 2
(IF = 200 rnA. IRM = 200 rnA. RL
=
100 n. i"
= 20 rnA)
Symbol
Typical Value
Unit
tfr
20
os
I"
8.0
os
PIN CONNECTION DIAGRAMS
2
Dual a-Diode Array
a-Diode Array
16-Pm Package
14-Pm Package
lIUIIlI '",' , ",:' ffi£
3
4
Dual10-0lode Array
14-Pm Package
Dual 8-Dlode Array
5
Dual8-Dlode Array
14-Pm Package
lO-Pln Package
Case 632. Case 646
Case 606
FIGURE 1 - TYPICAL CHARACTERISTICS
STATIC FORWARD VOLTAGE
FIGURE 2 - FORWARD RECOVERY TIME AND PEAK FORWARD
VOLTAGE TEST CIRCUIT AND WAVEFORMS
100 0
10n
TA:::; +25°C
t-tr~
tr~
15 ns
Duty Cycle':;';; 2 0%
PW=150ns
DUT
4 5 ns
1 OMU
RIn~
Cln ";;; 5 0 pF
1.0
1
o2
•
Case 607. Case 632. Case 646
Case 620. Case 648. Case 650.
0 4 0.6 0 8 1 0 1 2 1 4 1 6 1 8
VF. FORWARO VOLTAGE (VOlTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-43
MAD130, MAD1103, MAD1107, MAD1108
FIGURE 3 - REVERSE RECOVERY TIME TEST CIRCUIT AND WAVEFORMS
005
oSL
6 k
Adjust amplitude for
IF = 200 mAde to 500 mAde
Input Pulse
1 a ns
DutY Cycle
~F
TPln
0001,uF
12 mH
tr~04
ns
Aln ", 50 ohms
Adjust for IR = IF
tf~
~
, 0%
PW= 200 ns
Zout:: 50 ohms
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-44
MAXIMUM RATINGS (@ 25'C Free-Air Temperature unless otherwise noted)
Symbol
Value
Unit
VRM
50
Vdc
Steady-State Reverse
Voltage
VR
40
Vdc
Peak Forward Current at
(or below) 25'C Free-Air
Temperature(1 )
IFM
500
mA
Continuous Forward
Current at (or below)
25'C Free-Air
Temperature(2)
IF
400
mA
Continuous Power
Dissipation at (or below)
25'C Free-Air
Temperature(3)
PD
Rating
Peak Reverse Voltage(1)
mW
600
MADll09
-
MADl109C
CERAMIC
CASE 632-02
1
MADll09F
FLAT CERAMIC
CASE 607-05
~
14
MADll09C
MADll09F
MAD1109P
PLASTIC
CASE 646-06
MADll09P
Operating Free-Air
Temperature Range
TA
-65to +175 -65to +150 -55to +125
'C
Storage Temperature
Range
Tstg
-65to +200 -65to +175 -55to +150
'C
260
'C
MONOLITHIC DIODE ARRAY
Lead Temperature 1/16"
from Case for 10
Seconds
NOTES:
1. These values apply for PW '" 100 /LS, duty cycle'" 20%.
2. Derate linearity to + 125'C temperature at rate of 3.2 mAl"C.
3. Derate linearity to + 125'C temperature at rate of 6.0 mWFC.
ELECTRICAL CHARACTERISTICS (@ 25'C Free-Air Temperature)
Umit
Characteristic
(lR
Reverse Breakdown Voltage(4)
Static Reverse Current
(VR
Static Forward Voltage
(IF
(IF
Peak Forward Voltage(S)
~
~
~
(IF
~
JLA)
10
Symbol
Min
V(BR)
50
-
-
0.1
JLA
1.1
1.5
Vdc
5.0
Vdc
40 V)
IR
100 mAl
500 mA)(5)
VF
~
500 mAl
VFM
Max
Unit
Vdc
SWITCHING CHARACTERISTICS (@ 25'C Free-Air Temperature)
Characteristic
~
Forward Recovery Time, Figure 3 (IF
Reverse Recovery Time, Figure 2
(IF ~ 200 mA, IRM ~ 200 mA, RL
~
500 mAl
100 fl, irr
~
Symbol
Typical Value
Unit
tfr
20
ns
trr
8.0
ns
20 mAl
NOTES:
4. This parameter must be measured using pulse techniques. PW ~ 100 /Ls, duty cycle'" 20%.
5. This parameter is measured using pulse techniques. PW ~ 300 /LS, duty cycle'" 2.0%. Read time is 90 /LS from the leading edge of the
pulse.
S. The initial instantaneous value is measured using pulse techniques. PW ~ 150 ns, duty cycle'" 2.0%, pulse rise time'" 10 ns. The
total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-45
•
MAD1109
10!l
TPin o---'\NI"..-.....-------Q Tpout
tr'" 15 ns
tr '" 4.5 ns
DUTY CYCLE", 2%
PW = 150 ns
OUT
Rin '" 1 M!l
Cin '" 5 pF
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VF, FORWARD VOLTAGE (VOLTS)
•
Figure 1. Typical Characteristics
Static Forward Voltage
Figure 2. Forward Recovery Time and Peak Forward
Voltage Test Circuit and Waveforms
SCOPE
~
T
0.05/LF
poin____~~-7I--__.---~~~~~~--o
ADJUST AMPLITUDE FOR
IF = 200 mAde To 500 mAde
INPUT PULSE
6k
O.OOI/LF
'r'" 0.4 ns
Rin = 50 OHMS
tf'" 1 ns
DUTY CYCLE", 1%
PW = 200 ns
Zout = 50 OHMS
Figure 3. Reverse Recovery Time Test Circuit and Waveforms
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-46
MAXIMUM RATINGS
Symbol
Value
Unit
MD708,A,B
Collector-Emitter Voltage
VCEO
15
Vde
CASE 654-07, STYLE 1
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Rating
Collector Current - Continuous
One Die
Total Device Dissipation
@TA=25OC
MD70B, MD70BA. MD70BB
MD708F, MD70BAF, MD70BBF
Derate above 25·C
MD70B, MD70BA, MD708B
MD70BF, MD70BAF, MD708BF
PD
Total Device Dissipation
@TC = 25·C
MD708, MD70BA, MD70BB
MD70BF, MD708AF, MD708BF
Derate above 25·C
MD70B, MD70BA, MD70BB
MD70BF, MD708AF, MD70BBF
PD
Both Ole
Equal Power
mW
550
350
MD708F,AF,BF
600
400
CASE 610A-04, STYLE 1
mWrC
3.13
2.0
3.42
2.28
~~,-©
Watts
1.4
0.7
2.0
1.4
B.O
4.0
11.4
B.O
2
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
4
DUAL
AMPLIFIER TRANSISTOR
·C
•
NPNSILICON
Refer to MD2369 for graphs.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Both Die
Equal Power
One Die
Symbol
Characteristic
125
250
87.5
125
319
500
292
438
Junction to
Ambient
Junction to
Case
83
75
40
0
MD70B, MD70BA. MD708B
MD708F, MD708AF, MD708BF
R6JA(I)
Thermal Resistance, Junction to Ambient
Unit
·CIW
R6JC
·CIW
%
Coupling Factors
MD70B, MD708A. MD708B
MD70BF, MD70BAF, MD708BF
(1) R6JA is measured with the device soldered into a typical printed CIrcUIt board.
ELECTRICAL CHARACTERISTICS
(TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lC = 30 mAde, IB = 0)
(lC = 10 pAde, IE = 0)
(IE = 10 pAde, IC = 0)
Collector Cutoff Current (VCB = 20 Vde, IE = 0)
(VCB = 20Vde, IE = 0, TA = 150·C)
V(BRICEO
15
V(BR)CBO
40
V(BR)EBO
5.0
ICBO
-
-
15
30
Vde
Vde
Vde
nAde
pAde
ON CHARACTERISTICS
DC Current Gain(2)
(lC
(lC
(lC
(lC
=
=
=
=
500 pAde, VCE = 1.0 Vde)
10 mAde, VCE = 1.0 Vde)
100 mAde, VCE = 5.0 Vde)
150 mAde, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
VBE(sat)
(2) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-47
40
40
35
20
0.65
-
-
-
200
-
0.20
0.35
0.50
Vde
0.B5
0.95
1.10
Vde
MD918
MD918A
MD918B
MAXIMUM RATINGS
Rating
Value
Unit
Colleetor-Emitter Voltage
VCEO
15
Vde
Colleetor-Base Voltage
VCES
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Colleetor Current -
•
Symbol
Continuous
Total Device Dissipation @ TA
MDS18,AB
MDS1SAF
Derate above 25°C
MDS1S.A,B
MDS1SAF
= 25°C
Total Device Dissipation @ TC
MD91S.A,B
MD91SAF
Derate above 25°C
MD91S,A.B
MDS1SAF
= 25°C
7
1
CASE 654-07, STYLE 1
One Die
Both Die
550
350
600
400
mW
3.14
2.0
3.42
2.2S
mWrC
1.4
0.7
2.0
1.4
Watts
S.O
4.0
11.4
S.O
mWrC
Po
MD918Af ~1
9
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
CASE 610A-04, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
°c
NPN SILICON
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
All Die
Equal Power
One Die
125
250
87.5
125
31S
500
292
438
Junction to
Ambient
Junction to
Case
83
75
40
a
MDS1S,A.B
MDS1SAF
Thermal Resistance, Junction to Ambient
Unit
°CIW
R8JC
°CIW
R8JA(1)
MDS1S,A.B
MI;lS1SAF
Coupling Factors
%
MDS1S,A,B
MD91SAF
(1) R6JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 3.0 mAde, IB = 0)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lC = 1.0 !lAde, IE = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
3.0
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vde, IE = 0, TA
ICBO
= 15O"C)
-
-
Vde
-
Vdc
-
Vde
-
-
10
1.0
nAde
!lAde
50
165
-
-
ON CHARACTERISTICS
DC Current Gain
(lc = 3.0 mAde, VCE
hFE
= 5.0 Vde)
O.OS
0.2
Vde
VBE(sat)
-
0.86
0.9
Vde
IT
600
-
-
MHz
Cobo
-
1.1
1.7
pF
Collector-Emitter Saturation Voltage
(lC = 10 mAde,lB = 1.0 Ade)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
Output Capacitance
(VCB = 10 Vde, IE = 0, f
= lOa MHz)
= 100 kHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-48
MD918,A,B,AF
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25"C unless otherwise noted.)
Characteristic
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
Noise Figure
(lC = 1.0 mAdc, VCE
=
Symbol
Min
Typ
Max
Unit
Cibo
-
1.15
2.0
pF
NF
-
-
6.0
dB
100 kHz)
6.0 Vde, RS
= 400n, f = 60 MHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
IIc = 1.0 mAdc, VCE = 5.0 Vde)
hFE1/hFE2
MD918B
MD918A,AF
Base-Emitter Voltage Differential
IIc = 1.0 mAdc, VCE = 5.0 Vde)
IVBE1-VBE21
-
MD918B
MD918A,AF
Base-Emitter Voltage Differential Gradient
(lC = 1.0 mAde, VCE = 5.0 Vdc,
TA = -55 to +125"C)
-
0.8
0.9
A(VBE1-VBE2)
ATA
MD918B,AF
MD918A
mVde
10
5.0
-
-
-
-
-
1.0
1.0
20
10
-
"V/dc
"C
(2) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.0"10.
(3) The lowest hFE reading is taken as hFEI for this ratio.
400
z
--
200
;;:
'"
100
g;
......
S0
CI
0
,
"
.......
-55°C
0.5 0.7
1.0
U>
~:t.
~ 0.6
w
'"
«
.... \c'\.
~.
~
o
r...... "'l .,'
20
30
VCE(sa')
o
0.5 0.7
50
1.0
.,., 2000
I
:I:
~~ -1.2 r-' J5bLo 15boc+---+-+-+--HI-H+--+-I--hA---f
V
on
IE
V
~ -1.41-+-H++---+-+---+-+-+-+++++--l---il''--l--l--l
V
$
CI
~
,/
-1.6H+++I--+--1--+-+-++HoI'f-++-+-+-l
~
~
20
30
50
i'-..
f....-I./
\,
700
500
I
'"
-
~C!Jol)
TJ=250C
f=IOOMHz
:I:
~
z
:i
/
f.-
IC IS = 0
II
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (mA)
~ 1000
::>
~
-
t;
::>
CI
I::i
f.- r--
FIGURE 4 - CURRENT -GAIN
BANDWIOTH PRODUCT
FIGURE 3 - BASE-EMITTER
I II
~
V
l,..-
0.4
0.2
TEMPERATURE COEFFICIENT
-1.0
--
>
>-
" '-
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (mA)
--
VSE+={Cill
VSE(on) .. VCE • 5.0 V
!:;
==m~~~J- ~N
r-..
I I I" I I
20
II
TJ = 25°C
O.S
~
25°C
~
1.0
-ITJ = 150~C
•
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
Z
\
\
V-
;;:
-1.S
<;>
9mr~_f-'"
1.0
300
.t:'
200
3.0
~
'"
B
~ -2.0~.f11T
0.5 0.7
~
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (mA)
20
30
50
0.5 0.7
1.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-49
2.0
3.0
5.0 7.0
10
20
30
MD918,A,B,AF
FIGURE 5 - CAPACITANCE
3.0
I
2.0
TJ .125J
...
'"
....
....
;--
w
r-.....
z 1.0
!:::
~
"
-
.....
Cob
Cib
0.7
0.5
0.3
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-50
MAXIMUM RAnNGS
Rating
MD982,F
MQ982
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAdc
Collector Current -
Continuous
Total Device Dissipation @ TA
MD982
MD982F
M0982
Derate above 25'C
MD982
MD982F
M0982
= 25"C
Total Device Dissipation @ TC
MD982
MD982F
M0982
Derate above 25'C
MD982
MD982F
M0982
One Die
All Die
600
350
400
650
400
600
MD982
CASE 654-07, STYLE 1
DUAL
mW
Po
MD982F
CASE 610A·04, STYLE 1,~
DUAL
~ 1
mWrC
= 25'C
3.42
2.0
2.28
3.7
2.28
3.42
2.1
1.25
1.0
3.8
2.5
4.0
9
MQ982
CASE 607-04, STYLE 1
QUAD
Watts
Po
-S#b;
14
mWrC
12
7.15
5.71
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
AMPLIFIER TRANSISTOR
17.2
14.3
22.8
PNPSILICON
·C
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
One Die
All Die
Equal Power
83.3
140
175
58.3
70
43.8
292
500
438
270
438
292
Junction to
Ambient
Junction to
Case
85
75
57
55
40
0
0
0
'CIW
RIIJC
MD982
MD982F
M0982
Thermal Resistance, Junction to Ambient
Unit
RIIJA(I)
'CIW
MD982
MD982F
M0982
Coupling Factor
%
MD982
MD982F
M0982 (01-02)
(01-03 or 01-04)
(1) RIIJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characteristic
Typ
Max
-
-
Symbol
Min
Unit
VlBR)CEO
50
V(BR)CBO
60
V(BR)EBO
5.0
ICBO
-
-
hFE
20
25
35
40
50
75
90
60
VCE(sat)
-
0.25
0.5
Vdc
VBE(sat)
-
0.88
1.4
Vdc
tr
200
320
-
MHz
Cobo
-
5.8
8.0
pF
Cibo
-
16
30
pF
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB
(VCB
(lC
(IE
=
(IC
=
=
10 mAdc, IB
= 0)
= 0)
= 0)
10 pAdc, IE
10 pAdc, IC
= 50 Vdc, IE = 0)
= 50 Vdc, IE = 0, TA =
150'C)
-
0.020
20
Vdc
Vdc
Vdc
pAdc
ON CHARACTERISTlCS(2)
= 0.1 mAdc, VCE = 10 Vdc)
= 1.0 mAdc, VCE = 10 Vdc)
= 10 mAdc, VCE = 10 Vdc)
= 150 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage (lC = 150 mAdc, IB = 15 mAdc)
Base-Emitter Saturation Voltage (lC = 150 mAdc, IB = 15 mAdc)
DC Current Gain
(lC
(lC
(lC
(lC
-
-
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
Input Capacitance
= 10 Vdc, IE = 0, f = 100 kHz)
= 2.0 Vdc, IC = 0, f = 100 kHz)
(VCB
(VBE
(2) Pulse Test: Pulse Width.;; 300 ILS, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-51
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter:Base Voltage
VEBO
5.0
Vde
Collector Current ~
IC
200
mAde
Rating
Continuou~
Total Device Dissipation @ TA
25°C
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Operating and Storage Junction
Temperature Range
MD984
CASE 654-07, STYLE 1
One Die
Both Die
Equal Power
Po
575
3.29
625
3.57
mW
mWFC
Po
1.8
10.3
2.5
14.3
Watts
mWFC
TJ, Tstg
-65 to +200
°C
DUAL
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
•
Characteristic
Symbol
One Die
Both Die
Equal Power
Thermal Resistance, Junction to Case
R9.JC
97
70
°CIW
304
280
°CIW
Junction to
Ambient
Junction to
Case
84
44
Thermal Resistance, Junction to
Ambient
R9.JA(I)
Coupling Factor
Unit
PNPSILICON
Refer to MD3250 for graphs.
(1) R9.JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise
noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(IC = 10 pAde, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
Characteristic
Typ
Max
Unit
-
-
Vde
40
-
-
Vde
5.0
-
-
Vde
-
-
25
30
25
75
-
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 20 Vde, IE = 0, TA
ICBO
=
150°C)
nAde
pAde
ON CHARACTERISTICS
DC Current Gain(2)
(lc = 10 mAde, VCE = 10 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)(2)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
Vde
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 20 mAde, VCE = 20 Vde, f = 100 MHz)
(2) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-52
-
0.18
0.38
0.3
0.5
0.8
0.9
Vde
MD98S
CASE 654-07, STYLE 5
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation
@TA ~ 25°C
Derate above 25°C
Po
Total Device Dissipation
Po
@TC~25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
One Die
Both Die
Equal Power
575
3.29
2.0
625
3.57
2.28
1.8
10.3
2.5
14.3
,'.~~:~~
mW
3 EmItter
5 Emitter
mWI"C
Watts
-65 to +200
COMPLEMENTARY DUAL
GENERAL PURPOSE TRANSISTOR
mWI"C
°c
NPN/PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
One Die
Both Die
Equal Power
R6JC
97
70
°CIW
°CIW
304
280
Junction to
Ambient
Junction to
Case
84
44
ROJA(I)
Coupling Factors
Unit
%
(1) R8JA Is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage(2)
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
30
-
Collector-Base Breakdown Voltage
(lC ~ 10 pAdc, IE ~ 0)
V(BR)CBO
60
-
Emitter-Base Breakdown Voltage
(IE ~ 10 pAdc, IC ~ 0)
V(BR)EBO
5.0
-
-
-
-
20
20
20
25
35
40
50
75
90
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 50 Vdc, IE ~ 0)
(VCB ~ 50 Vdc, IE ~ 0, TA ~ +150°C)
ICBO
-
Vdc
Vde
Vdc
nAdc
pAdc
ON CHARACTERISTICS
DC Current Gain
(lc ~ 0.1 mAde, VCE ~ 10 Vdc)
(lc ~ 1.0 mAde, VCE ~ 10 Vdc)
(lc ~ 10 mAde, VCE ~ 10 Vdc)
(lc ~ 150 mAde, VCE ~ 10 Vdc)
hFE
-
90
-
Collector-Emitter Saturation Voltage
(lC ~ 150 mAde, IB ~ 15 mAde)
VCE(sat)
-
0.3
0.5
Vde
Base-Emitter Saturation Voltage
(lc ~ 150 mAde, IB ~ 15 mAde)
VBE(sat)
-
1.0
1.4
Vdc
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-53
•
MD985
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)'
I
Characteristic
Symbol
Min
Typ
Max
Unit
tr
200
320
-
MHz
Cobo
-
5.8
8.0
pF
Cibo
-
20
-
pF
SMALL-SIGNAL cHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE =' 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vdc, IC
=
150 mAde, IB1
=
15 mAde)
Turn-Off TIme
(VCC = 30 Vde, IC
=
150 mAde, IB1
=
IB2
ton
=
toff
15 mAde)
-
(2) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.0% .
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-54
25
75
-
ns
ns
MD9S6
CASE 654-07, STYLE 5
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAde
Collector Current -
Continuous
One Die
Total Device Dissipation
@TA ~ 25'C
Derate above 25'C
Po
Total Device Dissipation
@ TC ~ 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
, Collector
B:~
Both Die
Equal Power
3 Emitter
mW
550
3.14
600
3.42
1.4
8.0
2.0
11.4
7 Collector
mW/,C
Watts
-65 to +200
TJ, Tstg
mW/,C
COMPLEMENTARY DUAL
GENERAL PURPOSE TRANSISTOR
'c
NPN/PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
One Die
Both Die
Equal Power
Unit
ROJC
125
87.5
'CIW
ROJA(1)
319
292
'CIW
Junction to
Ambient
Junction to
Case
83
40
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Coupling Factors
%
(1) ROJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
-
Vde
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC
COllector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB
(VCB
~
~
(IE
~
(lC
~
~
10 mAde, IB
~
10 pAde, IE
10 pAde, IC
20 Vde, IE
20 Vde, IE
~
~
0)
0, TA
~
~
0)
0)
0)
V(BR)CEO
15
-
V(BR)CBO
40
-
V(BR)EBO
5.0
-
-
-
ICBO
~
150'C)
-
Vde
-
25
30
nAde
pAde
25
-
-
-
-
-
0.3
0.5
-
0.9
200
320
-
ON CHARACTERISTICS
DC Current Gain
(lc ~ 10 mAde, VCE
hFE
~
10 Vde)
Collector-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
(lc ~ 50 mAde, IB ~ 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
VBE(sat)
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
It
Current-Gain - Bandwidth Product
(lC ~ 20 mAde, VCE ~ 20 Vde, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vde, IE ~ 0, f ~ 100 kHz)
Cobo
-
(2) Pulse Test: Pulse Width .. 300 ",", Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-55
-
4.0
MHz
pF
•
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
SO
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Collector Current -
•
Continuous
Total Device Dissipation @TA = 25·C
MDl121, MDl122
MDl120F, MDl121F, MDl122F
MOl120
Derate above 25·C
MDl121, MDl122
MDl120F, MDl121F, MDl122F
MOl120
Po
Total Device Dissipation @ TC = 25·C
MDl120, MDl121, MDl122
MDl120F, MDl121F, MDl122F
MOl120
Derate above 25·C
MDl120, MDl121, MDl122
MDl120F, MDl121F, MDl122F
MOl120
Po
One Die
All Die
Equal
Power
575
350
400
S25
400
SOO
mW
3.29
2.0
2.28
3.57
2.28
3.42
mWrC
1.8
1.0
0.9
2.5
2.0
3.S
Watts
14.3
11.4
20.5
mWrC
10.3
- 5.71
5.13
Operating and Storage Junction
Temperature Range
TJ, Tstg
MDl120F
MDl121,F
MDl122,F
MQl1-20
MD1121, MD1122
CASE 654-07, STYLE 1
"~I
MD1120F
CASE 610A-04, STYLE ~
9
MQ1120
CASE 607-04, STYLE 1 ~_14
DUAL
AMPLIFIER TRANSISTOR
NPNSILICON
Refer to MD2218,A for graphs.
·C
-S5to +200
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
AU Die
Equal Power
One Die
MDl121, MDl122
MDl120F, MDl121F, MDl122F
MOl120
97
175
195
70
87.5
48.8
304
500
438
280
438
292
Junction to
Ambient
Junction to
Case
84
75
57
55
44
·CIW
R8JA(l)
Thermal Resistance, Junction to Ambient
MDl121, MDl122
MD1120F, MDl121F, MDl122F
MOl120
Unit
·CIW
R8JC
Coupling Factors
Unit
%
MD1121, MDl122
MD1120F, MDl121F, MDl122F
MOl120 (01-02)
(01-03 or 01-04)
0
0
0
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25·C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
30
-
Collector-Base Breakdown Voltage
-(lc = 10 JAAdc, IE = 0)
V(BR)CBO
60
-
Emitter-Base Breakdown Voltage
(IE = 10 JAAdc, IC = 0)
V(BR)EBO
5.0
-
-
-
10
10
nAdc
JAAdc
-
10
nAdc
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA
ICBO
= 150·C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-56
Vdc
Vdc
Vdc
1
MD1120F, MD1121,F, MD1122,F, MQ1120
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
20
30
40
50
40
50
60
65
100
120
160
200
Unit
ON CHARACTERISTICS
DC Current Gain(2)
(IC ~ 10 !£Adc, VCE ~ 10 Vdc)
(lc ~ 100 !£Adc, VCE ~ 10 Vdc)
(lc ~ 1.0 mAde, VCE ~ 10 Vde)
(Ie ~ 10 mAde, VCE ~ 10 Vdc)
-
hFE
Coliector·Emitter Saturation Voltage
(lC ~ 10 mAdc, IB ~ 1.0 mAdc)
VCE(sat)
-
80
100
mVdc
Base·Emitter Saturation Voltage
(lC ~ 10 mAdc, IB ~ 1.0 mAdc)
VBE(sat)
-
700
850
mVdc
f,-
200
250
-
MHz
Cobo
-
3.5
8.0
pF
SMALL·SIGNAL CHARACTERISTICS
Current·Gain - Bandwidth Product(2)
(lc ~ 20 mAdc, VCE ~ 20 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc, IE ~ 0, f ~ 100 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lc ~ 100 !£Adc, VCE ~ 10 Vdc)
(lc ~ 1.0 mAdc, VCE ~ 10 Vdc)
All Devices
MD1122, MD1122F
Base·Emitter Voltage Differential
(lc ~ 100 !£Adc, VCE ~ 10 Vdc)
(lc ~ 1.0 mAdc, VCE ~ 10 Vdc)
All Devices
MD1122, MD1122F
hFE1/hFE2
!VBE l-VBE2!
-
-
-
10
5.0
-
-
0.8
1.0
0.8
0.9
1.0
1.0
mVdc
~(VBE1-VBE2)
Base·Emitter Voltage Differential Change
Due to Temperature - MD1121, MD1122
(lC ~ 100 !£Adc, VCE ~ 10 Vdc, TA ~ - 55 to + 25°C)
(lc ~ 100 !£Adc, VCE = 10 Vdc, TA ~ +25to +125°C)
mVdc
(2) Pulse Test: Pulse Width"" 300 1"", Duty Cycle"" 2.0%.
(3) The lowest hFE reading is taken as hFE 1 for this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-57
•
MDtt23
MDtt30
MAXIMUM RATINGS
Rating
Symbol
Unit
CASE 654-07, STYLE 1
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAde
Collector Current - Continuous
II
Value
Total Device Dissipation
@TA = 25'C
Derate above 25'C
Po
Total Device Dissipation
@TC=25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
One Die
AU Die
575
3.29
625
3.57
1.8
10.3
2.5
14.3
7/~-"-()~~-E6-
mWrC
5 Emitter
DUAL
AMPLIFIER TRANSISTOR
Watts
-65 to +200
3 Emitter
1
mW
mWrC
PNPSILICON
'c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
One Die
AU Die
Equal Power
Unit
R8JC
97
70
'CIW
'CIW
304
280
Junction to
Ambient
Junction to
Cese
84
44
R8JA(1)
Coupling Factors
%
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
-
Collector-Base Breakdown Voltage
(lC = 10 ,JAde, IE = 0)
V(BR)CBO
60
-
Emitter-Base Breakdown Voltage
(IE = 10 ,JAde, IC = 0)
V(BR)EBO
5.0
-
-
-
-
10
10
nAde
,JAde
-
10
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 150'C)
ICBO
Emitter Cutoff Current
(VBE "" 3.0 Vde, IC = 0)
lEBO
-
Vdc
Vdc
Vde
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 10 ,JAde, VCE = 10 Vde)
hFE
MDl130
60
100
-
(lC = 100 ,JAde, VCE = 10 Vdc)
MDl123
30
80
120
(lC = 1.0 mAde, VCE = 10 Vde)
MDl130
100
180
-
(lC = 10 mAde, VCE = 10 Vde)
MDl123
MDl130
50
100
75
150
200
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-58
-
-
MD1123, MD1130
ELECTRICAL CHARACTERISTICS
(continued) ITA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 Ade)
VCE(sat)
-
0.18
0.25
Vde
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
0.8
0.9
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
fy
MD1123
MD1130
250
200
Cobo
100 kHz)
-
550
-
3.5
4.0
600
MHz
pF
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC = 100 IlAde, VCE = 10 Vde)
hFE1/hFE2
MD1123
MD1130
Base-Emitter Voltage Differential
(lC = 100 IlAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
0.8
0.9
IVBE 1-VBE21
MD1123
MD1130
Base-Emitter Voltage Differential Change
Due to Temperature - MD1121, MDl122
(lc = 1001lAde,VCE = 10Vde, TA = +25to +125°C)
-
-
-
1.0
1.0
mVde
10
5.0
.11VBE1 N BE21
MDl130
mVde
-
(2) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(3) The lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-59
-
10
•
MDl130F
For Specifications, See MD1123 Data.
MDl132,F
MAXIMUM RATINGS
Rating
MD1132F
CASE 610A-04, STYLE 1
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAdc
Collector Current -
Continuous
One Die
Both Die
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
550
3.14
600
3.42
mW
mWfC
Total Device Dissipation @ TC
Derate above 25"C
= 25°C
Po
1.4
8.0
2.0
11.4
Watts
mWfC
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
MD1132
CASE 654-07, STYLE 1
7/~-~~~.:.~-
°c
THERMAL CHARACTERISTICS
•
1
Characteristic
Symbol
One Die
Both Ole
Equal Power
RruC
125
87.5
°CIW
RruA(l)
319
292
°CIW
Junction to
Ambient
Junction to
Case
Unit
83
40
%
Thermal Resistance,
Junction to Case
Unit
3 Emitter
5 Emitter
DUAL
RF AMPLIFIER TRANSISTOR
NPNSILICON
Thermal Resistance,
Junction to Ambient
Coupling Factors
Refer to MD918 for graphs.
(1) RruA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Characteristic
I
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(lC = 3.0 mAdc, IB = 0)
= 1.0 "Adc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 "Adc, IC = 0)
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = lS00C)
Collector-Emitter Breakdown Voltage(2)
V(8R)CEO
15
Collector-Base Breakdown Voltage
V(BR)CBO
30
V(BR)EBO
5.0
ICBO
-
(IC
-
-
-
10
1.0
Vdc
Vdc
Vde
nAdc
"Adc
ON CHARACTERISTICS
= 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAdc, Ie = 1.0 mAdc)
Base-Emitter Saturation Voltage (lC = 10 mAdc, IB = 1.0 mAdc)
DC Current Gain(2)
(lC
Collector-Emitter Saturation Voltage
hFE
50
-
-
0.2
0.4
Vdc
0.7
1.0
Vdc
-
VBE(sat)
-
IT
600
800
-
-
Cobo
-
1.5
1.3
3.0
1.7
pF
Cibo
-
1.8
2.0
pF
0.9
-
1.0
-
-
5.0
mVdc
-
0.8
1.0
VCE(sat)
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAdc, VCE = 10 Vdc, f
= 100 MHz)
Output Capacitance (VCB = 0, IE = 0, f = 140 kHz)
(VCB = 10 Vdc, IE = 0, f = 140 kHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 140 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC
= 1.0 mAdrl, VCE = 5.0 Vdc)
(lC = 1.0 mAdc, VCE = 5.0 Vdc)
Base-Emitter Voltage Differential
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 1.0 mAdc, VCE = 6.0 Vdc, TA = -55 to +25°C)
(lC = U) mAdc, VCE = 5.0 Vdc, TA = +25 to + 125°C)
hFE1/hFE2
IVBE1-VBE21
'"''
'"''
'"''
0.4
200
100
II
II
...
0.8
70
FIGURE 3 - TEMPERATURE COEFFICIENTS
1.0
0
O.S
r-.
.... .........
+1. 6
>
.,;
~
"'~
~~
0.7
<
:;
-
~
0
~
SOO
/I
-2.4
0.5
1.0
2.0
S.O
10
20
SO
IC. COLLECTOR WRRENT (mA)
IC, COLLECTOR CURRENT 1m A)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-63
100
200
SOO
MD2218,A,F,AF, MD2219,A,AF, MQ2218,A, MQ2219,A
NOISE FIGURE
(VCE = 10 Vdc, T A = 25°C)
FIGURE 4 - FREQUENCY EFFECTS
FIGURE 5 - SOURCE RESISTANCE EFFECTS
10 ru--~--T:-r-rTT1T--'--r-rTTTTnr.-r---"nylrnlTll
11
t = 1.0 kHz
.lLIlI..l
I
6.0
"-
5.0
~
01'.
'":::>
..:
z
2. 0
i'
IC = l001lA
RS=1.0kU
1. 0
0
0.1
II
1.0
2.0
5.0
10
t. FREIlUENCY (kHz)
I'-,
,;
2.0H--tf~lli:ti:::j~"'f""tt1rtttHIIIHmt1
I""""
50
20
O.~~~~~~~~~~~~~~~~~
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
100
RS. SOURCE RESISTANCE (k OHMS)
FIGURE 6 - CURRENT·GAIN·BANDWIDTH PRODUCT
'"
V
I)
z
II
i
0.5
0.2
\
~ 4.0l:-~--1'Io,+---+-t-+Htl¥-?ooc-"",-++t+bIl!-b"'l--+--+-H-ttttI
..:
II
r-.t---r-.
FIGURE 7 - CAPACITANCES
500
30
Jill
:I:
~
t;
:::>
e
e
g:
300 f-- VCE = 20 V
TJ = 25°C
t= 100MHz
200
e
3:
e
z
~
z
~
:;;:
'"z
''""
w
30
a'"
20
Cob
w
~
70
50
J"r--l' i'r--
i' r--l'
...
/~
100
TJ = 25°C
~b
t- r-
.... 1'
:I:
I"-i""-
20
I- \-!"""
l-
;~;JI
1
6.0 f-H-++t-N.ttt-t-+V:lt-V-tt+!-Ht--t1''tl[7t-t-ttitt1
~
I--
r-..
w
z
i
\
'"
IC = 101lA
RS, 4.3 kU
r-..
~ 3. 0
;:;
'"
100llA/YlII
8.0 f-1-t~+t+l-ttt-+-r-rTl+tlrtt-+-r--f-lli'rrttH
"I'.
~ 4.
w
Ic=I.0mA
10
~
,...
U
~
V
7.0
f"'....
5.0
.t'
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
Ie. COLLECTOR CURRENT (mAde)
10
20
3.0
0.1
30
0.2
0.3
0.5
1.0
2.0 3.0 5.0
REVERSE VOLTAGE (VOLTS)
20
10
SWITCHING TIME CHARACTERISTICS
FIGURE 8 - TURN·ON TIME
200
)
or\." j)
i\,@5V
10
1\.
..
5000 ~t=
TJ = 25'C
le/l,= 10
I,
I-tl - t-
Vee =
TJ 25'C
Ie/I, 10
5V (UNLESS NOTEDI
I-"
2000
Vee 30 V
UNLESS NOTED
'\.
~
FIGURE 9 - CHARGE DATA
10.000
t'
./
1000
Id@VEBI•HI "
50
,2,V
;::
0
r--
'/
I.!@VEBloHl =0
,
0
10
3.0
5.0
10
~
--
"
1'\
:\.
20O~
~ .... ~
V
'" .....
20
30
50
Ie. COLLECTOR CURRENT (mAl
100
/
200
I-'
IlT. TOTAL CONTRO~~
CHARGE
HIGH GAIN TYPES
L?WGAINTYP ES
Vee = 30V
1/
~
IL.
100
t=:::nA. ACTIVE REGIO~t: ALL TYPES
CHARGE
~
o
I II
20
300
3.0
5.0
7.0
10
I
20
30
50 70
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-64
100
200
300
MD2218,A,F,AF, MD2219,A,AF, MG2218,A, MG2219,A
FIGURE 10 - TURN·OFF BEHAVIOR
300
"
200
"'"
~ 100
i=
~ 70
c
:i 50
~
v.
-
"
30 0
I
l'
--
"-
i"'I
~ lei I, ~IO
:0:
100
~
~
1,
~
"-
......
~
10
lel l,
lei I,
~
10
30
lell,
~
t'-
~
r-..
i'
20
i
5'C 1
20
30
50
70
c
20' ~ ~
I
..
..........
100
......
200
""
:i 50
.........
r---
LOW GAIN TYPES
'--I TJ ~
~
0
;:;:
I'-.
lell,
.'-,.
~
10
30
~
r---
r-
1 1
0
>-
f'.
l"
OGAINTYPES
TJ ~ 25'C
1o
10
300
1
1
20
30
Ie, COLLECTOR CURRENT ImAi
50
70
200
100
300
Ie, COLLECTOR CURRENT (mAl
FIGURE 11 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
GENERATOR RISE TIME", 2.0 os
pw", 200 ns
DUTY CYCLE = 2.0%
20
lell,
:::l
J'.
>:r-,.".
r---
i=
..........
10
10
"
200
FIGURE 12 - STORAGE TIME AND FALL
TIME EQUIVALENT TEST CIRCUIT
+30 V
RISE TIME'" 3,0%
DUTY CYCLE = 2.0%
+30 V
200
200
Il:
9V
o
--
619
SCOPE
Rin> 100 k ohms
SCOPE
Rin> 100 k ohms
Cin" 12pF
RISE TIME <: 5.0 ns
+16~VR;
Cin'" 12 pF
RISE TIME", 5.0 ns
0-----
> 200 ns....!
--J--
1.0 k
IN916
-13.8 V
-3.0 V
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-65
•
MAXIMUM RATINGS
Rating
Symbol
Value
VCEO
15
Vdc -
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector-Emitter Voltage
Collector Current -
,
Continuous
One Ole
•
Total Device Dissipation
@TA= 25'C
MD2369,A,B
MD2369fAF,BF
MQ2369
Derate above 25'C
MD2369,A,B
MD2369F,AF,BF
MQ2369
Po
Total Device Dissipation
@TC = 25'C
MD2369,A,B
MD2369,AF,BF
MQ2369
Derate above 25'C
MD2369,A,B
MD2369,AF,BF
MQ2369
Po
Unit
MD2369,A,B
MD2369~AF,BF
MQ2369
All Die
Equal Power
MD2369,A,B
CASE 654-07, STYLE 1
mW
550
350
400
600
400
600
~
MD2369,AF,BF
CASE 610A-04, STYLE 1 9
mWI'C
3.14
2.0
2.28
3.42
2.28
3.42
MQ2369
_. . . .
CASE 607-04, STYLE 1
!!!!!III!!
Watts
1.4
0.7
0.7
2.0
1.4
2.8
8.0
4.0
4.0
11.4
80
16
14
DUAL
GENERAL PURPOSE TRANSISTOR
mWI'C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
NPN SILICON
'c
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
All Die
Equal Power
One Ole
MD2369,A,B
MD2369,AF,BF
MQ2369
Thermal Resistance, Junction to Ambient
Unit
'CIW
ROJC
125
250
250
87.5
125
62.6
319
500
438
292
438
292
Junction to
Ambient
Junction to
Case
83
75
57
55
40
0
0
0
'CIW
ROJA(l)
MD2369,A,B
MD2369,AF,BF
MQ2369
MD2369,A,B
MD2369,AF,BF
MQ2369 (Ql-Q2)
(Ql-Q3 or Ql-Q4)
Coupling Factor
%
(1) ROJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'e unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lc = 10 mAde, IB = 0)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
Emitter·Base Breakdown Voltage
(IE = 10 pAdc, Ie = 0)
V(BR)EBO
Characteristic
-
Max
Unit
-
-
Vdc
40
-
-
Vdc
5.0
-
-
Vdc
-
-
Typ
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = + 150'e)
ICBO
ON CHARACTERISTICS(2)
DC Current Gain
(Ie = 10 mAde, VeE = 1.0 Vdc)
(lc = 10 mAde, VCE = 1.0 Vdc, TA = -55'C)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-66
1
pAdc
0.03
30
MD2369,A,B, MD2369,AF,BF, MQ2369
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
-
0.25
Vdc
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
0.7
-
0.85
Vde
tr
500
800
-
Cobo
-
-
4.0
pF
Cibo
-
-
4.0
pF
ts
-
13
ns
ton
-
-
15
ns
toff
-
-
20
ns
0.9
0.8
-
1.0
1.0
-
-
5.0
10
Characteristic
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lc = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 1.0 Vde, IC
= 0, f =
100 MHz)
MHz
SWITCHING CHARACTERISTICS
Storage Time
(VCC = 10 Vde, IC
= IBl =
Turn-On Time
(VCC = 3.0 Vde, VBE(off)
Turn-Off Time
(VCC = 3.0 Vde, IC
=
=
=
IB2
10 mAde)
=
1.5 Vde, IC
10 mAde, IBl
= 3.0
10 mAde, IBl
mAde, IB2
=
= 3.0 mAde)
•
1.5 mAde)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lc = 3.0 mAde, VCE = 1.0 Vde)
hFE1/hFE2
MD2369A, MD2369AF
MD2369B, MD2369BF
Base-Emitter Voltage Differential
(lC = 3.0 mAde, VCE = 1.0 Vde)
IVBE1-VBE21
MD2369A, MD2369AF
MD2369B, MD2369BF
Base-Emitter Voltage Differential Gradient
(lC = 3.0 mAde, VCE = 1.0 Vde,
TA = -55to + 125°C)
mVde
-
",vrc
a(VBE1-VBE2)
aTA
-
-
MD2369A, MD2369AF
MD2369B, MD2369BF
10
20
(2) Pulse Test: Pulse Width"" 300 ",", Duty Cycle"" 2.0%.
(3) The lowest hFE reading is taken as hFEl for this test.
FIGURE 1 - STORAGE TIME TEST CIRCUIT
+10 V
980
+6:~O
-4.0V=r-
L
*
__
. . - -.....--0 Scope
I
CS';;;;3.0 pF
500
_...1
=
Pulse Width
300 ns
tf~ 1.0 ns
Duty Cvcle~2.0%
FIGURE
FIGURE 2 - TURN·ON TIME
200
100
70
50
!
"'
;::
.
0-
30
"
L
10 0
1........ 1"
1,@VCC=3.0V
i'-
~VCC=10V
..........
~ :--
10
......
7.0
5.0
-I
3.0
5.0 7.0
10
-
II
20
30
!w
0
;::
0
.
VCC= IOV
IcllB = 10
TJ 25'C
.........
II
.......
0
7. 0
5. 0
Id@VBE('''1 = 1.5 V ~
3.0
2.0
TURN-OFF TIME
0
0
20
2.0
1.0
3-
20 0 .......
leliB = 10
TJ = 25'C
3. 0
~
50
2. 0
70 100
1.0
......
.........
Is
,...2.0
3.0
5.0
7.0
10
20
30
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-67
50
70
100
MD2369.A.B. MD2369.AF.BF. MQ2369
FIGURE 4 - TURN-ON TEST CIRCUIT
FIGURE 5 - TURN-OFF TEST CIRCUIT
VCC= 3_0 V
VCC=3.0V
IT
270
.....- -.....-0 Scope
l0.75V
o
-
+10.75VQ
I
3.3 k
--r-
I
'T' Cs < 4.0 pF
--
0-
__ J I
-1.5 V
-
Pulse Width"" 300 ns
tf~1.0ns
tr<'·Ons
D utv Cycle ~ 2.0%
Duty Cycl.';;;2.0%
FIGURE 6 - CAPACITANCE
FIGURE 7 - CURRENT-GAIN-BANDWIDTH PRODUCT
5.0
•
~
.........
to::>
f· 100MHz
-
e
'"g:
~ 700
Cob
-
1.0 k
'"e
....
z
~
~
./
'/
SOO
;;:
~
1.0
V
",
~
'" 300
0.7
0.5
VC~.Jov I
~
)b
--
2.0
..,~
~<.i
~ 2.0k
TJ' 250C
3.0
~
I
*Cs <4.0 pF
_ _ ...JI
~
-4.15 V
Pulse Width"" 300 ns
.....- - _ - 0 Scope
3.3 k
..,::>'"
0_05 0.1
0_2
0.5
1.0
2.0
5.0
10
20
50
,.: 200
1.0
2.0
5.0 7.0
3.0
VR. REVERSE VOLTAGE (VOLTS)
10
20
so
30
70 100
IC. COLLECTOR CURRENT (mA)
FIGURE 9 - "ON" VOLTAGES
FIGURE 8 - DC CURRENT GAIN
1.4
I-
TJ' 250C
1.2
S 1.0
e
~
w
!:i!
~
~
VaE( .. t) @Iclla - 10
O.8 -
VaE(on)@VCE- 1.0 V0.6
!;
>- O.4
0
0.2
IIIII
0.5
1.0
IC. COLLECTOR CURRENT (mA)
~
w
to
'C' 10mA
30mA I-- 100mA
200mA
~
<>
r-
~
8
ul
'-'
>
0.4
""I-
i\..
.........
o. 2
0
0.05
200
0.2
0.5
1.0
·dv'c'i~rVCE(~t)+H++ttt--t--+-t-tt-ttt......~
J-l::±±t1T
forV
IIJJ.L.....--"
"'~ t=tjj~~~~~:ll4~t;~t:125~O~Cf'Otl~5~~Ct;~
ill
~ r0.1
~
$
-55°C to 250C -....
'"
~ -1.0r--+-t-++t+t+--+-++-+-++++!----+-+-+-111+1++!
111+-----11
iii
::j
100
~.... +1.01-H-+l1
r+tlitt-IIII-+-+++-+++++--+-++t++
11+++
III~
1
.lllill
I
250C,01500C/
O. 8
~
'" o. 6
~
50
G +2.0 '"'·'APP"'-L"'-,ET"SrTFOTTR-IC-"-8'.. ~hF-E/T"3.0'TlTTr--'-'-lrlnJnllT111'---I-'
TJ·250C
!;
!ii'"
I I
2.0
5.0
10
20
IC. COLLECTOR CUR RENT (mA)
FIGURE 11 - TEMPERATURE COEFFICIENTS
FIGURE 10 - COLLECTOR SATURATION REGION
S 1.0
V
VCE( ..,)@ Iclla • 10
o.2=
-2.0
6va
aE
~~~I~II~j~~1t~~~~55~c'L25L~Lc
;: -3.01-,;;-~~
1111:,;;--;;
I~~:';;--;=--L..J.I-l+.'n~iifl~
i'--=
....
2.0
5.0
10
20
50
0.2
la. aASE CURRENT (mA)
0.5
1.0
2.0
5.0
10
20
IC.COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-68
50
100
200
MAXIMUM RATINGS
Symbol
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAdc
Rating
Collector Current -
Continuous
One Die
Total Device Dissipation
@TA=25°C
MD2904,A, MD2905,A
MD2904F,AF, MD2905,AF
M02904, M02905A
Derate above 25°C
MD2904.A. MD2905,A
MD2904,F,AF, MD2905,AF
M02904, M02905A
Po
Total Device Dissipation
@TC = 25°C
MD2904,A, MD2905,A
MD2904F,AF, MD2905F,AF
MQ2904, M02905A
Derate above 25°C
MD2904,A. MD2905,A
MD2904F,AF, MD2905,AF
M02904, M02905A
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
MD2904A,AF
MD290SA,AF
M0290SA
Unit
60
Vdc
MD2904,A,F,AF
MD290S,A,'AF
MQ2904, MQ290SA
MD2904,F
MD290S,F
M02904
Vdc
MD2904,A
MD2905,A
CASE 654-07, STYLE 1
All Die
Equal Power
575
350
400
625
400
600
3.29
2.0
2.28
3.57
2.28
3.42
MD2904F,AF
MD2905,AF
CASE 610A-04, STYLE 1
2.5
2.0
3.6
10.3
5.71
5.13
14.3
11.4
20.5
-65 to +200
9
mWrC
M02904
MQ2905A
CASE 607-04, STYLE 1
Watts
1.8
1.0
0.9
"I
~
mW
4.-"'''1
14
•
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
mWrC
°c
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
All Die
Equal Power
One Die
MD2904,A, MD2905,A
MD2904F,AF, MD2905,AF
M02904, M02905A
97
175
195
70
87.5
48.8
304
500
438
280
438
292
Junction to
Ambient
Junction to
Case
84
75
57
55
44
R8JA(1)
Thermal Resistance, Junction to Ambient
Unit
°C/W
R8JC
°C/W
MD2904,A, MD2905,A
MD2904F,AF, MD2905,AF
M02904, M02905A
%
Coupling Factor
MD2904,A, MD2905,A
MD2904F,AF, MD2905,AF
M02904, M02905A (01-02)
(01-03 or 01-04)
0
0
0
(1) R8JA is measured with the device soldered into a typical printed C",CUIt board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
40
60
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
MD2904, MD2905
MD2904A, MD2905A
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
60
-
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
-
-
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, T A = 150°C)
ICBO
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-69
Vdc
-
Vdc
-
Vdc
pAdc
0.020
30
MD2904,A,F,AF, MD2905,A,AF, MQ2904, MQ2905A
ELECTRICAL CJtARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
Symbol
Min
Typ
Max
Unit
lEBO
-
-
30
nAde
20
50
70
70
150
ON CHARACTERISTICS(21
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
hFE
MD2904
MD2904A
MD2905
MD2905A
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
•
(lC
(lC
=
150 mAde, VCE
=
= 500 mAde, VCE =
10 Vde)
40
35
75
-
-
MD2904
MD2904A
MD2905
MD2905A
50
100
75
75
100
175
MD2904
MD2904A
MD2905
MD2905A
35
40
75
lOa
90
90
1'0
200
MD2904,A,
MD2905,A
40
100
90
200
120
300
60
80
130
150
-
0.25
0.5
0.4
1.6
0.88
1.0
1.3
2.6
320
-
MHz
5.8
8.0
pF
16
30
pF
-
45
ns
25
40
20
MD2904
MD2904A
MD2905
MD2905A
10 Vde)
-
40
30
50
Coliector·Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
ease-Emitter Saturation Voltage
(lC = 150 mAde, Ie = 15 mAde)
(lC = 500 mAde, Ie = 50 mAde)
VeE(sat)
-
-
Vde
Vde
SMALL·SIGNAL CHARACTERISTICS
IT
Current-Gain - eandwidth Product(3)
(lC = 50 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(Vce = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VeE = 2.0 Vde, IC
= 0, f =
100 kHz)
Cobo
Cibo
200
-
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn·Off Time
Storage Time
Fall Time
(VCC = 30 Vde, VeE
IC = 150 mAde,
lel = 15 mAde)
ton
= 0.5 Vde,
td
tr
(VCC = 30 Vde,
IC = 150 mAde,
lel = le2 = 15 mAde)
-
toff
-
ts
-
tf
-
(2) Pulse Test: Pulse W,dth"" 300 p.s, Duty Cycle"" 2.0%.
(3) Pulse Test: Pulse Width"" 300 p.o, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-70
-
12
ns
35
ns
-
130
ns
-
100
ns
-
40
ns
MD2904,A,F,AF, MD2905,A,AF, MQ2904, MQ2905A
FIGURE 1 -
DC CURRENT GAIN
2.0
~
N
::;
--
t-
~
- --
1.0
tIC
~
Z
~
0.7
."
'"
0.5
--
Ii;
...
tIC
tIC
I-- .-
--
-.-
r--
-
+25'C
--- --
-.- -
TJ =+1750 C
-
--- --
-I- ... -
----
I-
~
-I-
~
~-
--
~
-....
.....
,
I\,
" "-
- - -- -
--
~
........
r--.
~
~,
I........
55'C
.... ....
~
--VeE=IOV
---- VeE = 1.0V
0.3
~
....
.~
\
0.2
0.5
0.7
1.0
2.0
3.0
7.0
5.0
10
50
30
20
70
100
200
300
500
•
Ie. COllECTOR CURRENT (mAl
FIGURE 2 -
FIGURE 3 - TEMPERATURE
"ON" VOLTAGES
+2.0
2.0 n'T'TTT'"--r-rr-r-r".-rrrr---r-"....,,..,.,.,,.,.,---,rrrr,,
COEFFICI~TS
.111 IIIII
~F1J21~T~
I III I
i -SS'C
TO +2S'C
+1.0
;;;;;
+2S'C TO +l7S'C
IS
1;1
Iii
6v.F~V~}1 III
-1.0
II+25'C
I IIIjJJ
TO + 17S'C
8
~
"j
-2.0
1+t+tt--++++-+-++++HH-+-l+-l-+f++I+-l-:VR++I
0.4
1-H+l+-+++++VeECSATI@lell,=IO+fj.......i..-'''-++-I-H-I
-niO,+jSii
ornmjITtt±~tti~TIillLU~
0.5
1.0
2.0
5.0
10
50
20
100
200
-3.0
500
O.S
1.0
50 100
5.0
10
20
Ie, COllECTOR CURRENT (mAl
2.0
Ie. COLLECTOR CURRENT ImAl
200
500
NOISE FIGURE
VCE
= IOV. TA = 25°C
FIGURE 5 - SOURCE RESISTANCE EFFECTS
FIGURE 4 - FREQUENCY EFFECTS
6.0
VCE -10 Vd.
TA - 25°C
5.0
iii
'"'"
~
\ le" O;'::
'-1.0kHz
/
B.O I-H--lII,rH+titt-+1H-t-t+tttt--++-+-+-lII-tItI
r-..
4.0
r-.....
~
~
~
z:
10 ~~II~,
11l~~n~nl~1I""""""-"T"T"T'nn
le=lO~
Rs=4. kQ
3.0
2.0
le= 1.0.J
Rs = 0.7 kQ
r-.
1.0
r-
111111 I
Ie = 100 pJ\
IRis ~I ~.~ k~
o
0.1
0.2
0.5
1.0
2.0
5.0
f, FREQUENCY 1kHz)
10
20
50
o0.1
100
0.2
0.5
10
20
5.0
2.0
RS. SOURCE RESISTANCE (k OHMS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-71
1.0
Tnm
50
100
MD2904,A,F,AF, MD2905,A,AF, MQ2904, MQ2905A
FIGURE 6 - CURRENT·GAIN BANDWIDTH PRODUCT
6011
J
III
I
VCE = 20 Vd.
I ' 100 MHz
TJ = 25°C
ij:!400
u
:::>
.'"'"
c
c
!
V
~IOO
iii 80
,;.
•
V
60
0.5
...
u'
100
70
t" "'.
,
"
30
20
...
N. . .
10
FIGURE 9 -
20
CHARGE DATA
.....-r-
3000
2000
u
d
"'
VCC = 30V
TJ = 26°C
lL
-.l
1,"''''I1T. TOTAL CONTROL CHARGE
g 1000
I
700
500
300
,,
- -I-
30
50 70 100
Ie. COLLECTOR CURRENT (mAl
FIGURE 10 -
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
VR. REVERSE VOLTAGE (VOLTSI
5000
,
I""
20
0.3
TURN ON TIME
I"
5.0 7.0
~
3.0
0.2
50
- - - - VCC = 30 v. VSE(off) = 2.0 V- - VCC' 10 v. VSE(off)=OV IcllS = 10
1J = 25°C
,
50
10
30
~L
200
1=
20
II II
300
~
:--.....
5.0
FIGURE 8 -
!
i--
~
~ 7.0
500
t. '
I = 100 kHz
I"'--...
~ 10
V
~J ~ I~~c
-
t--- ......Cib t--- ....... ...... 'cot-
u
2.0 3.0
5.0 7.0 10
IC.COLLECTOR CURRENT (MAl
0.7 1.0
-
r"..
~
I
r-- r-_
i'""- r....
20
:;200
'"
8'"
.t:'
FIGURE 7 - CAPACITANCE
30
200
300
200
~
QA:ACTIVE REGION CHARGE
IIIII
100
5.0 7.0
500
10
20
STORAGE TIME
30
50 70 100
Ie. COLLECTOR CURRENT lmAl
FIGURE 11 -
500
200
300
500
FALL TIME
500
300
III
I
200
t·s·-t,-IIBtf
300
30
20 ~
...
200
300
IC/lB=10"-
,
- .:--
0
III
30
50 70 100
Ie. COLLECTOR CURRENT (mAl
70
50
IC/IB = 20
0
"'
20
~
1=
..........
'II~I\S = 2~
10
100
~
101"1
10
5.0 7.0
~
I~~:~~~c -
"-
!
~
Iclla=IO _
1T1 .....
VCC=3OV -
200
lSI = IS2
TJ = 25°C
F'::'o
-.l
"'
10
5.0 7.0
500
10
20
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
5·72
30
50 70 100
Ie. COLLECTOR CURRENT (mAl
200
300
500
MD2904,A,F,AF, MD2905,A,AF, MQ2904, MQ2905A
FIGURE 12 - DELAY AND RISE
TIME TEST CIRCUIT
P.w. > 200 ns
FIGURE 13 - STORAGE AND FALL
TIME TEST CIRCUIT
P.W.
tr
-30 V
R:::
1.0,",5
-30 V
<. 2.0 ns
Duty Cycle OS; 2.0%.
tr CO;; 2.0 ns
Duty Cvcle '" 2.0%.
200
200
o-u--
Scope
Scope
1.0 k
-16 V
-3.0 V
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-73
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAdc
Collector Current - Continuous
One Die
•
Total Device Dissipation
@TA = 25·C
MD3250,A, MD3251,A
MD3250,AF, MD3251 F,AF
M03251
Derate above 25·C
MD3250,A, MD3251,A
MD3250~AF, MD3251F,AF
M03251
PD
Total Device Dissipation
@TC=25·C
MD3250,A, MD3251,A
MD3250,AF, MD3251 F,AF
M03251
Derate above 25·C
MD3250,A, MD3251,A
MD3250,AF, MD3251 F,AF
M03251
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
MD3250,A"AF
MD3251,A,F,AF
MQ3251
MD3250,A
MD3251,A
CASE 654-07, STYLE 1
All Die
Equal Power
mW
575
350
400
625
400
600
~
MD3250,AF
MD3251F,AF
CASE 610A-04, STYLE 1
mWrC
3.29
2.0
2.28
3.57
2.28
3.42
MQ3251
CASE 607-04, STYLE 1
Watts
1.8
1.0
0.9
2.5
2.0
3.6
10.3
5.71
5.13
14.3
11.4
20.5
9
J
14
DUAL
AMPLIFIER TRANSISTOR
mWrC
PNP SILICON
·C
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
AU Die
Equal Power
One Die
MD3251,A. MD3251,A
MD3250,AF, MD3251 F,AF
M03251
Thermal Resistance, Junction to Ambient
Unit
·CIW
R8JC
97
175
195
70
87.5
48.8
304
500
438
280
438
292
Junction to
Ambient
Junction to
84
75
57
55
44
·CIW
R8JA(l)
MD3250,A, MD3251,A
MD3250,AF, MD3251F,AF
M03251
Case
Coupling Factors
%
MD3250,A, MD3251,A
MD3250,AF, MD3251 F,AF
M03251 (01-02)
(01-03 or 01-04)
0
0
0
(1) R8JA is measured with the device soldered into a tYPIcal printed CirCUIt board.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
-
-
10
10
nAdc
pAdc
-
-
10
nAdc
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TA = 150·C)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-74
MD3250;A"AF, MD3251,A,F,AF, MQ3251
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Min
Typ
MD3250,A,AF
MD3251,A,F,AF
25
50
75
100
MD3250,A,AF
MD3251,A,F,AF
MQ3251
50
80
80
82
170
170
MD3250,A,AF
MD3251,A,F,AF
25
50
35
75
MD3250,A,AF
MD3251,A,F,AF
MQ3251
50
100
100
87
180
180
MD3250,A,AF
MD3251,A,F,AF
MQ3251
50
100
100
92
190
190
MD3250,A,AF
MD3251,A,F,AF
MQ3251
15
30
30
50
90
90
Characteristic
Symbol
Max
Unit
ON CHARACTERISnCS(2)
DC Current Gain
(lC = 10 i-
r-
5.0
t; 80of-VCE 20 Vdc
f- 1=100MHz
Of- TJ=250C
~
5.0
10
~
r-
200
.,"'"':::>
20
VV
100
0.2
50
0.3
1/
0.5
2.0
1.0
3.0
5.0
7.0
10
20
NOISE FIGURE VARIATIONS
(VCE
= 6.0 V, T A = 2So C)
FIGURE 3 - EFFECTS OF FREQUENCY
FIGURE 4 - EFFECTS OF SOURCE RESISTANCE
6.0
10
TT
IT
1= 1.0 kHz
'\.
~ 4.0
"':::>
'";:;:...
8.0
" "'-
iii
C>
z
~. 2.0
'";:;:
...
~ 4.0
...z
r\
"
........
o
0.2
0.4
1.0
2.0
4.0
"'-
2.0
10
20
o
40
0.1
100
0.2
0.4
-
i"'"
1.0
FIGURE 5 - DC CURRENT GAIN
ZO
TJ
~
«
~
;;:
L
o. 7
-~50C
10
20
40
100
........
.....
.......'""""'l
'"
r--. """~~
'">-
~ 0.5
..... ~
i3
.,
"
NORMALIZED AT IC = 10 rnA, VCE = 1.0 V
83 - MD3250,A.F.AF
TYPICAL hFE = 167 - MD3251.A,F,AF, MQ3251
c
~ o. 3
0.2
0.1
4.0
- "'-
=moc
1.0
C>
i
2.0
l0011A
~
RS, SOURCE RESISTANCE (kOHMSI
I. FREQUENCY (kHz)
~
N
V
r7.
V
'/
V
I'-... V
\
~
;/1
I/'
I\..
~
RS=1.6k!1
IC = 10011A
0.1
1011A
/)
/
~
~
.....
!!!
I/,
Ic=1.0mA /
... 6.0
RS = 4.3>!1
IC=lOl1A
r--.
1\
7
II
0.2
0.3
0.5
0.7
1.0
I I
20
I II I I
3.0
50
7.0
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-76
10
20
30
50
MD3250,A,AF, MD3251,A,F,AF, MQ3251
FIGURE 6 - "ON" VOLTAGE
1.0
0.8
g
0
~
FIGURE 7 - TEMPERATURE COEFFICIENTS
--
I ITJ = 25°C
II II
VBE{ ..t @ICIIB = 10
1. 2
5:G o. 8
IO~nrl VCE{l.1
25°C to 1250C
....
-55°C to 25°C
1.1
~ O. 4
...'"
S
O. 8
~
1. 2
250 to
~
,.-
VCEhatl @ICIIB = 10
>-
i
U
1.0
2.0
3.0
5.0 7.0
20
10
30
,.
6
2. 4
1
2. 8
0.5 0.7
50
/I
2.0
1.0
IC. COLLECTOR CURRENT {mAl
MD3250
3.0
I
I
7.0
20
10
30
50
IC. COLLECTOR CURRENT {mAl
FIGURE 8 - COLLECTOR SATURATION REGION
1.0 rT.,......",TT-r-........",....-r-r-rTTT-rn....-----,
~
w
O. 8
o
>
o. 6
'"~
~
~
!
1\
o.4
0:
~
j
O. 2
II
\
~
o
Ic=2.0mA
10mA_
I I II
TJ = 25°C
~25mA
~50mA
\
\
"-
•
M03251. MQ3251
1.0
III
I
5.0
U . . . . ,"/
~
.
-55°C to 25°C - CIII
--
0VB for Vse
~ 2. O
7'
1~50CI
w
!:;
0.4
0
>
.,;
0.5 0.7
0
u
0.6
o
O. 4
>-
w
0.2
~
;::;
I
"APPLIES FOR ICIIB" hFE/5
I'-.
-
o
u
ul
\
\
-
......
...
u
0.05
0.1
1.0
2.0
0.5
0.2
lB. BASE CURRENT {mAl
5.0
10
>
20
0.01
0.02
0.05
0.1
0.2
0.5
1.0
lB. BASE CURRENT {mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-77
2.0
5.0
10
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
MD3409
MD3410
One Die
Both Die
Equal
Power
PD
575
3.29
625
3.57
mW
mWrC
PD
1.8
10.3
2.5
14.3
Watts
mWrC
CASE 654·07, STYLE 1
-65 to +200
TJ, Tstg
°c
1
THERMAL CHARACTERISTICS
•
Characteristic
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
IS
5 Emitter
3 Emitter
DUAL
AMPLIFIER TRANSISTOR
Symbol
One Die
Both Die
Equal Power
RruC
97
70
°CIW
RruA(1)
304
280
°CiW
Junction to
Ambient
Junction to
84
44
Unit
NPN SILICON
Refer to MD2218 for graphs.
Coupling Factors
(1) RruA
,1"-4):~-
Case
%
measured with the device soldered mto a typical prmted C"CUlt board.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
I
Symbol
Min
V{BR)CEO
30
V(BR)CBO
60
V(BR)EBO
5.0
Typ
Max
Unit
OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage
Collector· Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lC = 10 !
100
50
200
I
"Applies 'or IC/IB'" hFE/4
1.2
..
I
FIGURE 4 - TEMPERATURE COEFFICIENTS
+1.6
1.4
; 1.0
o
>
;;; 0.8
"II
TJ = 250C
~
......
2.0
\
IIII
100mA
Ic=20mA
r-.
.-
-55"
IIII
I II
III
1000C10 1750C
I--
YBf(lIl) @lIC~
r-- VB~(On) ~ Vcr ~O
~ 0.4
0.2 I--
I
r
20
I I I
30
--
J.
I.
~ "eVe'or
f-"
-I'"""
250C10 1000~
I I
VCE("I)
-550C 10 250C
-.,:~
j!iSOe to 250C
BYB tor VBE
VC~(III) JIcAB ,110 1
I
8
6.
....I--""
I
III
J
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
20
500 700 1000
30
1250C1010QDC
50
200 300
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-80
IlL
70 100
1000e to 175 0e
I I
I I
500 700 1000
MD3467, MQ3467
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
2.0
r-.....
1. 0
0::
~ o. 6
ffi
0.4 ~TJ'200oC
0:
0:
:>
u
O.
0:
o
G
de
...........
---Bonding Wire limit
2
Second Breakdown limit
...... r-...,
j
O. 1
~(Nota: Thermallimitationl need to be
B 0.06 t---
incorporated in SOA Curve.)
':;0.04
0.02
2.0
FIGURE 7 - RISE AND FALL TIME
FIGURE 6 - TURN-QN TIME
200
100
200
ICIIS'10
~
"r-....
0
~
20
30
w
:&
"-.Jt,@VCC'IOV
~
......
.........
;::
.........
10
10
500 700 1.0 k
20
200
k~
~
..'"
rc::
-
- 1-lella' l
}IClla. 20
100
---
fooTJ' 1500 C
100
I-
~
.:
0
20
10
?( ---::: r'::::::
0
"-
o
30
10
10
500 700 1.0 k
'" ....
.......
Ic/IB' 10 ~
-
r-.....
r.........
VCC' 110 V
lal' IB2
20
30
~Tr 1500C
leila - 20
N!'
t<-
'f' r--...;.;..
t-.
50 70 100
200 300
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-81
-
't--.
r....
0
50 70 100
200 300
IC. COLLECTOR CURRENT (mA)
f-- ~TJ' 2SOC
1'..[ ...
IB1- IB2
t's- Ir llBlf
20
"'-l",
~. .....
0:
60
500 700 1.0 k
FIGURE 9 - FALL TIME
200
I -I-- TJ·250 C
w
:&
-
200 300
50 70 100
COLLECTOR CURRENT (mA)
30
FIGURE 8 - STORAGE TIME
400
I,,!
~f....
ICllrl~
..........
50 70 100
200 300
IC. COLLECTOR CURRENT (mAl
If
i'--.i"';: r-.......
VCC 30 V
"
H+l
~ .....
0
0
2.0 V"","
Id@CEl"'ri
10
10
-TJ-15OOC
0
r-...
0
-TJ' 2SOC
t,@VCC'30V
I
0
~ ~~
100
~
""
---
,,~
TJ' 25bC
"
0
40
4.0
6.0
S.O 10
20 .
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
500 700 1.0 k
•
MD3467~ MQ3467
FIGURE 11 - CAPACITANCE
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
59
300n
Rise Time ~5 ns
70
-30 V
+27.7 V
Ie = 500 rnA
IB1=IB2=50rnA
n
...
Pulse Width"" 0.510'1
Duty Cycle"" 2%
O.l1'F
~nlN9160r
1
-30U
50
--
~
300n
30
z
<[
ti
:
&qulv.
-
~
50
20
~
..;
In
--
TJ-250 C
I"
~
1'1"-
10
1.0
0.D4 0.06 0.1
.....
0.2
0.4 0.6 1.0
2.0
4.0 6.0
VR. REVERSE VOLTAGE (VOLTS)
Out
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5·82
10'
2D
40
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
65
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
1.0
Adc
Collector Current - Continuous
One Die
Total Device Dissipation
@TA= 25'C
MD3725
MD3725F
M03725
Derate above 25'C
MD3725
MD3725F
M03725
Po
Total Device Dissipation
@TC = 25'C
MD3725
MD3725F
M03725
Derate above 25'C
MD3725
MD3725F
M03725
Po
MD3725,F
MQ3725
MD3725
CASE 654-07, STYLE 1
All Die
Equal Power
7,
1
mW
600
350
400
650
400
600
MD3725F
CASE 610A-04, STYLE
1~:
mWrC
3.42
2.0
2.28
9
3.7
2.28
3.42
MQ3725
•___ i<:~
CASE 607-04, STYLE 1
14
Watts
2.1
1.25
1.0
3.0
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
DUAL
AMPLIFIER TRANSISTOR
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
1-
-65 to +200
•
NPN SILICON
·C
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
One Die
All Die
Equal Power
83.3
140
175
58.3
70
43.8
292
500
433
270
438
292
Junction to
Ambient
Junction to
Case
85
75
57
55
40
0
0
0
RWC
MD3725
MD3725F
M03725
Thermal Resistance, Junction to Ambient
Unit
.c/w
·C/W
RWA(l)
MD3725
MD3725F
M03725
Coupling Factor
%
MD3725
MD3725F
M03725 (01-02)
(01·03,01-04)
(1) RWA IS measured wIth the deVIce soldered mto a typIcal printed CirCUIt board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
V(BR)CEO
40
-
-
Vdc
V(BR)CES
65
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
65
-
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
6.0
-
-
-
0.12
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lc = 10 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage
(lc = 10 pAdc, VBE = 0)
MD3725F
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TA = 100'C)
ICBO
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-83
-
1.7
120
Vdc
Vdc
pAdc
pAdc
MD3725,F, MQ3725
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise
I
Characteristic
noted.)
Symbol
Min
Typ
Max
50
30
-
150
-
0.19
0.30
0.26
0.45
-
-
0.86
1.2
Unit
ON CHARACTERISncS(2)
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
(lC = 500 mAde, IS = 50 mAde)
VBE(sat)
-
-
Vde
-
0.80
Vde
SMALL-SIGNAL CHARACTERISTICS
t,.
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
•
200
Output Capacitance
(VCS = 10 Vde, IE = 0, f = 100 kHz)
Cobo
-
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 100 kHz)
Cibo
-
-
-
MHz
10
pF
66
pF
20
45
ns
50
75
ns
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC = 500 mAde, IS1 = 50 mAde, VBEloff) = 3.8 Vde)
ton
Turn-Off Time
(VCC = 30 Vde, IC = 500 mAde, IB1 = IS2 = 50 mAde)
toff
-
(2) Pulse Test: Pulse Width .. 300 "'s, Duty Cycle", 2.0%.
TYPICAL DC CHARACTERISTICS
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
400
1.4
~J .12&OC
z
C
2011
a:
a:
.=
100
80
CI
80
f--
'"z......
~
-
V
2&OC
r0f--
1.2
eo 1.0 V
.
'"
...,'"
~
r-. t-...
~
_ _&&OC
~
1.0
-
0.8
0.6 FvBE(sat)@ IC/ls = 10
~
>
:> 0.4
~
"
40
~TJ=250C
.....
0.2
r-VCE(satl @IcIIs = 10
20
10
20
200 300
100
50
20
10
500 . 700 1000
30
FIGURE 3 - COLLECTOR SATURATION REGION
..g 1.0
~
.....,
'"
!:;
co
>
...
a:
Ii
.....t>
......
'I'
0.2
>
\
0
0.&
;:;
:t
1\
\
II
5.0
10
w
~omA
'r--.
!il!
...
i
300mA
III
20
50
100
200
+1.0
500 700 1000
I-f-- ~
+0.5 ~'8VC FOR VCElsat)
-0.5
5 -1.0
500mA
-
I -100mA
.'"
g;
l000mA
I I
...........
........
2.0
300
'APPLIES FOR Ic/is < hFE/2
..s +1.5
~
1\
\
1.0
200
I
~ "'2.0
:;;
TJ = 25 0C
0.8
:l
c
100
FIGURE 4 - TEMPERATURE COEFFICIENTS
~
a:
70
+2.5
0.8
0.4
50
IC. COLLECTOR CURRENT ImAI
IC. COLLECTOR CURRENT (mAl
500
I-'"
-2.0
-2.5
10
la. BASE CURRENT (mAl
-~
-1.5 -9va FORV BE
20
30
50
100
200
300
IC. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-84
500
1000
MD3725,F, MQ3725
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 6 - CAPACITANCE
FIGURE 5 - CURRENT-GAIN - BANDWIDTH PRODUCT
~
500
VCE: 10 Vdc
I: 100 MHz
TJ: 250 C
'"
t;
:::>
c
300
'"
l:i
200
~
100
10
50
V
'""'" "
V
~
c
z
;li
""-,
.e
0
"'
0
w
z
~
U
=
10
t,@ VCC - 10 Vdc
VCC: 30 Vdc
30
r-..
]:
w
50
Id @VSE(olll : 0 V
.......
~~~(~~~ ~:~2 Vdc
3.0
10
10
10
30
50
100
100
300
VC~= Jo~l
Tr 15 0 C
~
r-
.....
......
V 1/
~
V V
10
500
10
1000
10
30
50
100
100
300
500
1000
IC. COllECTOR CURRENT (mAl
FIGURE 10 - COLLECTOR CUTOFF CURRENT
1000
+30 V
;(
....oII!lI
.3
....
Vin'" +9.7
ffi
15
11'F
r--o
To S.mpling
I k
100
/ '~'S= 10
'"
V
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
Pulse Generator
tr.t,..; I nl
P.W."".01'1
.Zln z 50 n
D.C. <2%
50
t;@ICIIB= 10
"-
IC. COLLECTOR CURRENT (mAl
-3.8 V
10
LI'
30
10
50
10
tl@ICIIS:IO
I !CIlS=10
">=
~
~ i.::'"'
10
5.0
FIGURE 8 - TURN·OFF TIME
100
-w
1.0
100
ICIIS: 10
TJ: 150 C
~
1.0
VR. REVERSE VOLTAGE (VOLTSI
43 Oscilloscope
~
:::>
"'
~
~
c
Z!n ;;'100 kn
tr <1.0 nl
a
c"
1.0
8
0.1
~
== ==
Z"'"
VCES= 60
10
....
~
100
..d.,...
100
3~",~
10-.:
.J9JY
iii
~
U/
0.01
o
~
~
00
00
~
m
~
TJ. JUNCTION TEMPERATURE (OCI
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
5·85
~
~
~
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.5
Adc
Collector Current - Continuous
One Die
•
Total Device Dissipation
@TA= 25°C
MD3762
MD3762F
M03762
Derate above 25°C
MD3762
MD3762F
M03762
PD
Total Device Dissipation
@TC = 25°C
MD3762
MD3762F
M03762
Derate above 25°C
MD3762
MD3762F
M03762
PD
MD3762,F
MQ3762
MD3762
CASE 654-07, STYLE 1
All Die
Equal Power
mW
600
350
400
650
400
600
MD3762F
CASE 610A-04, STYLE
~
mWrC
3.42
2.0
2.28
9
3.7
2.28
3.42
MQ3762
~
CASE /J07-04, STYLE l' -4
"'1
Watts
2.1
1.25
1.0
3.0
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
14
DUAL
AMPLIFIER TRANSISTOR
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
"~I
PNP SILICON
°C
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
All Die
Equal Power
One Die
MD3762
MD3762F
M03762
Thermal Resistance, Junction to Ambient
Unit
0c/w
Rruc
83.3
140
175
58.3
70
43.8
292
500
438
270
438
292
Junction to
Ambient
Junction to
Case
85
75
57
55
40
0
0
0
RruA(l)
'CIW
MD3762
MD3762F
M03762
Coupling Factors
%
MD3762
MD3762F
M03762 (01-02)
(01-03,01-04)
(1) RruA IS measured WIth the deVIce soldered mto a tYPIcal printed CirCUIt board.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
Characteristic
Typ
Max
Unit
-
Vdc
40
-
-
Vdc
5.0
-
-
Vdc
-
-
100
10
nAdc
pAdc
-
100
nAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA
ICBO
=
-
100°C)
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-86
MD3762,F, MQ3762
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
Characteristic
1
Symbol
Min
Typ
Max
Unit
hFE
20
40
-
-
ON CHARACTERISTlCS(2)
DC Current Gain
(lc ~ 1.0 Adc, VCE ~ 2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC ~ 1.0 Adc, IB ~ 0.1 Ade)
VCE(sat)
-
0.52
1.0
Vdc
Base-Emitter Saturation Voltage
(lc ~ 1.0 Adc, IB ~ 0.1 Adc)
VBE(sat)
-
1.05
1.4
Vdc
150
220
-
MHz
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC ~ 50 mAde, VCE ~ 10 Vde, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc, IE ~ 0, f ~ 140 kHz)
Cabo
-
8.5
20
pF
Input Capacitance
(V BE ~ 0.5 Vdc, IC ~ 0, f ~ 140 kHz)
Cibo
-
22
80
pF
(VCC ~ 30 Vdc, VBE(off) ~ 2.0 Vde,
IC ~ 1.0 Adc, IB1 ~ 100 mAde)
td
5.0
10
ns
18
30
ns
(VCC ~ 30 Vdc, IC ~ 1.0 Adc,
IBI ~ 182 ~ 100 mAde)
ts
-
45
80
ns
tf
-
18
30
ns
•
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
tr
(2) Pulse Test: Pulse Width", 300 !Ls, Duty Cycle'" 2.0%.
(3)
is defined as the frequency at which Ihfel extrapolates to unity.
tr
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
200
VCEJ2.0~
~ 1.0
II
'"
...IE
.-
70
II:
II:
~ 50
-""'" I-
~
;;;
'"~
250 C
./"'"
II
Ic'20mA
lOOmA
4IlOmA
iii
L1:I
II:
0.4
~
""-
j 0.2
c
'-
<.>
ul
~
2.0
5.0
0.2
500 1000
50
100
2D0
10
20
IC, COLLECTOR CURRENT (mA)
0
+1. 6
I.4
G
f- TJ= 25"C
.5+0.8
~
~1.0
ill
~
o
f-
'"
~ o.6f-
VaE(.')j I:!'.!!!f
100
1000C 10 1750 C
250 C 10 loo0~
"'eve for VCE(set)
1-- I-- t-I-
-550 C10 250 C
it...
c
...g;-O.a
..
<.>
VaE(on) iii' VCE • 1.0 V
~
II:
~ 0.4
VC~b.') ~ IC/la' 1'01
I
20
30
I
200
II
"Applies for Iclla" hFE/4
<3
>
0.2 I--
50
5.0
10
20
2.0
la, aASE CURRENT (rnA)
1.0
3-
1. 2
>
0.5
FIGURE 4 - TEMPERATURE COEFFICIENTS
FIGURE 3 - "ON" VOLTAGE
;;; o.a
1\1.0 A
1"-.
~
o
. - ' :.---
20
1.0
TJ' 25"C
~
r..
......
-550
3D
;: 0.8
\ II
II
1111
1111
o
~ 0.6
..-r
ul
.l!'
h~
V
TJ~'~~
zlOO
III I
III I
o
>
~
r:;:;;;
~-1. 6
~
i
I I
50 70 100
200 300
IC, COLLECTOR CURRENT (rnA)
-550 C10 25"C
Bva for VaE
III
-2.4
20
3D
1250 C to lOOOC
50 10 I DO
200 300
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-87
~OOOCIO 1750 C
III
10
500 700 1000
-
II I
II I
500 100 1000
MD3762,F, MQ3762
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
2. 0
_
r--...
1. 0
~
~
O. 6
~
O.
~
O. 2
~
o. 1
4-TJ-2000C
-
de
-Bonding Wire Limit
.............
Second Br.kdown Limit
......
I
80.08 ==:(NO": ~~~r::~~~i~~~,% ~e::!:~.be
':;0.04
1 I
0.02
2.0
II
4.0
6.0
a.o 10
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
40
FIGURE 8 - TURN-ON TIME
FIGURE 7 - RISE AND FALL TIME
200
•
100
200
lellB = 10
~
"-
0
"
'rOVCC=lOV
",
0
....
W. .........
'ttl " r-....
30
70
!w
50
~
~
Ycc' 30V
~
50 70 100
200 300
IC. COLLECTOR CURRENT (rnA)
10
10
500 700 1.0 k
20
~
co
- r-r-
-
lelIB=10(""
100
~
.~
TJ=1500C
--
100
30
----
r--. l",
......... "-
~~
ICIIB= 10
0
0
t's-trllStf
20
30
50 70 100
200 300
IC. COLLECTOR CURRENT (rnA),
10
10
500 700 l.Ok
20
30
Pul. Width - 400 hi
Duty Cycle - 2"
500 700 1.0 k
~ ......
TJ' 25°C
29n
...........
150n
T
r-
FIGURE 11 - CAPACITANCE
~
tN916or
RI_Tlm.<;;5nl
I'-- .....
50 70 100
200 300
IC. COLLECTOR CURRENT (rnA)
50
O.IIJF
- ::s --.
70
-30 V
150n
I
.......
.........
VCC= 110 V
IBI = IB2
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
+27.3 V
TJ = 15QOC
Ic1IB-20
~
IBI = IB2
-T)" 25"C
-<:
['.,
o
2~0
500 700 1.0 k
50 70 100
200 300
COLLECTOR CURRENT (rnA)
0
:~
I;; 60
40
'f
FIGURE 9 - FALL TIME
200
TJ = 25°C
--
') Iclla= 20
....
I' !'..... .,'7
ICllr 1
I- f--
..?" rc:::
I-TJ = 15O"C
"'- -;:-
20
FIGURE 8 - STORAGE TIME
200
-
;:: 30
.......
'd @I tBEIO"I-r
20
,:;
.
""'r @I VCC = 10 V
2.0V,"",-
10
10
-r-- I-Tj" 25"C
100
.-...:
0
~
TJ' 25°C
filulv.
1'",
10
IC-1.0Amp
IS1· IS2- 100 rnA
7.0
0.04 0.06 0.1
r-..
02
D.4 0.6 1.0
2.0
4.0 6.0
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-88
10
20
40
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
50
mAde
Collector Current -
Continuous
CASE 654-07, STYLE 1
One Die
Both Die
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
550
3.14
600
3.42
mW
mWfC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.4
8.0
2.0
11.4
Watts
mWfC
Operating and Storage Junction
Temperature Range
-65 to +200
°c
Junction to
Ambient
Junction to
Case
Unit
Thermal Resistance
One Die
Effective, Both Die
319
292
125
87.5
Coupling Factor
83
40
TJ, Tstg
MD4260
MD4261
THERMAL CHARACTERISTICS
Characteristic
DUAL
RF AMPLIFIER
PNP SILICON
°CIW
%
Refer to 2N4260 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CEO
12
V(BR)CBO
12
-
V(BR)EBO
4.0
-
ICEO
-
1.0
!JAde
ICBO
-
10
nAde
hFE
30
20
200
VCE(sat)
-
0.3
Vde
VBElsa!l
-
1.0
Vdc
1.0
1.5
-
GHz
-
Cabo
-
2.5
pF
Cibo
-
2.5
pF
rb'Ce
-
35
30
ps
DC Current Gain Ratio(1 I
(lC = 10 mAde, VCE = 1.0 Vde)
hFE1/hFE2
0.8
1.0
-
Base-Emitter Voltage Differential
(lC = 10 mAde, VCE = 1.0 Vde)
IVBE1-VBE21
-
10
mVdc
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCE
Collector Cutoff Current
(VCB
=
=
(lC
=
(lC
(IE
=
=
10 !JAde, IC
12 Vde, IB
10 Vdc, IE
= 0)
= 0)
10 mAde, IB
10 /-'Ade, IE
= 0)
= 0)
= 0)
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC
=
10 mAde, VCE
=
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
=
(lC
1.0 Vde)
=
(lC
= 30
10 mAde, IB
10 mAde, IB
=
=
mAde, VCE
=
2.0 Vde)
1.0 mAdc)
1.0 mAde)
-
-
SMALL-SIGNAL CHARACTERISTICS
= 0.5 mAde, VCE = 4.0 Vde, f = 100 MHz)
= 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance (VCB = 3.0 Vdc, IE = 0, f = 100 kHz)
Input Capacitance (VBE = 0.5 Vde, IC = 0, f = 100 kHz)
Collector Base Time Constant (IC = 5.0 mAde, VCE = 4.0 Vde, f = 31.8 MHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 31.8 MHz)
Current-Gain -
Bandwidth Product
(lC
(IC
tr
MATCHING CHARACTERISTICS (MD4261 onlyl
(1) The lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-89
•
MDSOOO,A,B
CASE 654·07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Base Voltage
VCBO
20
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Rating
Collector Current Continuous
•
Total Device Dissipation @ TA = 25°C
Derate above 25°C
One Side
Both
Sides
300
1.7
400
2.3
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
DUAL
AMPLIFIER TRANSISTOR
mW
mWrC
-65 to +200
PNPSIUCON
°c
Refer to 2N3307 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Characteristic
I
Symbol
Min
Typ
Max
Unit
-
Vde
-
Vde
OFF CHARACTERISTICS
(lc
V(BR)CEO
15
=
V(BR)CBO
20
-
V(!!R1EBO
5.0
-
-
-
-
= 3.0 mAde, IB = 0)
10 !lAde, IE = 0)
Emitter·Base Breakdown Voltage (IE = 10.!lAde, IC = 0)
Collector Cutoff Current (VCB = 15 Vde, IE = 0)
(VCB, = 1~ Vde, IE = 0, TA = 150°C)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
(IC
ICBO
0.010
1.0
Vde
!lAde
ON CHARACTERISTICS'
= 3.0 mAde, VCE = 1.0 Vde)
(lc = 10 mAde, IB = 1.0 mAde)
Base-Emitter Saturation Voltage (lc = 10 mAde, IB = 1.0 mAde)
DC Currellt Gain
(lC
Collector-Emitter Saturation Voltage
hFE
·20
50
-
-
-
VCE(sa!t
04
Vde
VBE(satl
-
-
1.0
Vde
600
900
-
MHz
-
1.7
pF
Cibo
-
2.0
pF
NF
-
30
6.0
dB
-
0.7
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 4.0 mAde, VCE = 10 Vde, I
IT
=
100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, I =
140 kHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, I =
140 kHz)
Noise Figure
(Ie = 1.0 mAde, VCE
Cobo
= 6.0 Vdc, I = 60 MHz, RS = 400 ohms)
FUNCTIONAL TEST
Amplilier Power Gain
(lC = 6.0 mAde, VCB
=
12 Vde, RG
=
RL
= 50 ohms, I = 200 MHz)
MATCHING CHARACTERISTICS
hFE~/hFE2
DC Current Gain Ratio(l)
(lC = 4.0 mAde, VCE = 10 Vde)
MD5000
MD5000A
MD5000B
Base-Emitter Voltage Differential
(lC = 4.0 mAde, VCE = 10 Vd~)
0.9
0.8
IVSE1-V SE21
MD5000
MD5000A
MD5000B
Base-Emitter Voltage Differential Gradient
(lc = 4.0 mAde, VCE = 10 Vdc, TA = -55 to +125°C)
MD5000
MD5000A
MD5000B
'I.(VBE1-VBE2)
aTA
-
-
5.0
-
-
1.0
1.0
-
-
-
5.0
10
-
10
-
mVde
",vrc
(1) The lowest hFE reading is taken as hFEl lor this ratio.
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
5-90
-
-
10
20
MAXIMUM RATINGS
MD6001.F
MD6003 MD6002,F
Symbol MD6003F M06001,2
Rating
MD6001,F
MD6002,F
MD6003
MQ6001, MQ6002
Unit
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation @TA
MD6001,2,3
MD6001F,2F
M06001,2
Derate above 25°C
MD6001,2,3
MD6001F,2F
M06001,2
= 25°C
Total Device Dissipation @ TC
MD6001,2,3
MD6001F,2F
M06001,2
Derate above 25°C
MD6001,2,3
MD6001F,2F
M06001,2
=
25°C
30
Vdc
50
Vdc
60
One Die
AU Die
Equal
Power
575
350
400
625
400
600
3.29
2.0
2.28
3.57
2.28
3.42
1.8
1.0
0.9
2.5
2.0
3.6
10.3
5.71
5.13
14.3
11.4
20.5
MD6001
MD6002
MD6003
CASE 654-07, STYLE 5
mW
Po
MD6001F
~
MD6002F
~1
CASE 610A-04, STYLE 1 9
MQ6001
MQ6002
CASE 607-04, STYLE 1
mWrC
Watts
PD
NPN/PNP SILICON
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
•
COMPLEMENTARY DUAL
GENERAL PURPOSE
TRANSISTOR
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
AU Die
Equal Power
One Die
97
175
195
70
87.5
48.8
304
500
438
280
438
292
Junction to
Ambient
Junction to
Class
84
75
57
55
44
0
0
0
MDS001,2,3
MDS001F,2F
M06001,2
Thermal Resistance, Junction to Ambient
Unit
°CIW
RoJC
RoJA(l)
°CIW
MD6001,2,3
MD6001F,2F
MOS001,2
Coupling Factor
%
MDS001,2,3
MDS001F,2F
MOS001,2 (01-02)
(01-03 or 01-04)
(1) RoJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, 'B = 0)
V(BR)CEO
30
-
-
Collector-Base Breakdown Voltage
(lC = 10 /lAde, IE = 0) MDS003
MDSOO1.F, MDS002,F, MOS001, M06002
V(BR)CBO
50
60
-
Emitter-Base Breakdown Voltage
(IE = 10 /lAde, IC = 0)
V(BR)EBO
5.0
-
-
-
-
50
30
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 30 Vdc, VBE = 3.0 Vdc)
(VCE = 50 Vdc, VEB = 3.0 Vdc)
'BEV
MDS003
MDS001,F,2,F, MOS002,F
Vdc
Vdc
nAdc
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-91
Vdc
MD6001,F, MD6002,F, MD6003~ MQ6001, MQ6002
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted)
Characteristic
Collector Cutoff Cu rrent
(VCE = 30 Vde, V8E(off) = 3.0 Vde)
(VCE = 50 Vde, VE8(off) = 3.0 Vde)
(VCE = 50 Vde, VE8(off) = 3.0 Vde,
TA = 150'C)
Symbol
Min
ICEV
Max
Unit
nAde
nAde
!lAde
nA
-
-
-
30
20
30
-
-
100
MD6001,F, M06001
MD6002,F, M06002
20
35
80
70
-
MD6001,F, M06001
MD6003
M06002,F, M06002
25
40
50
90
70
100
-
MD6001,F, M06001
MD6002,F, M06002
35
75
70
110
-
MD6001,F, M06001
MD6003
MD6002,F, M06002
40
70
100
-
120
110
200
300
MD6001,F, M06001
All Other Devices
20
30
-
-
MD6001,F, M06001
MD6002,F, M06002
20
50
MD6003
MD6001,F,2,F, M06001,2
MD6001,F,2,F, M06001,2
Collector Cutoff Current
(VC8 = 40 Vde, IE = 0)
Typ
IC80
MD6003,F
ON CHARACTERISTlCS(2)
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lc = 10 mAde, VCE
•
=
10 Vde)
(lC = 150 mAde, VCE = 10 Vde)
(lc = 300 mAde, VCE = 10 Vde)
(lC
=
150 mAde, VCE
=
-
hFE
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 150 mAde, 18 = 15 mAde)
(lC = 300 mAde, 18 = 30 mAde)
All Devices
MD6001, MD6002,F, M06002,1
8ase-Emitter Saturation Voltage
(lC = 150 mAde, 18 = 15 mAde)
(lC = 300 mAde, 18 = 30 mAde)
All Devices
MD6001, MD6002,F, M06001,2
VCE(sat)
-
90
-
-
0.3
0.59
0.4
1.4
1.02
1.25
1.3
2.0
80
Vde
-
V8E(sat)
-
Vde
-
(2) Pulse Test: Pulse W,dth", 300 ,..s, Duty Cycle'" 2.0%.
--
FIGURE 1 - DC CURRENT GAIN
2.0
...S....
::;
~
II:
- -- - -- - - - -
t-"
1.0
CI
~
iz
0.7
>-
...
0.5
::0
co
.It
-- -- - - '-- -- --- TJ =+175DC
f-
-I-
-I"-
+25'C
--- .- - --
...... --"
II:
II:
....
f...-- ,..-
--'" ...
~
-...
......
"
" ""
\
r- -_ ~
i"--
55'C
"
.... ....
.~
-'-YeE= lOY
---- YeE = 1.0Y
0.3
i"'-
\
'"
....
\
\
0.2
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
Ie, COllECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-92
100
200
300
500
MD6001,F, MD6002,F, MD6003, MQ6001, MQ6002
FIGURE 2 -
"ON" VOLTAGES
FIGURE 3 - TEMPERATURE COEFFICIENTS
2.0 rTTT1rr-r"'TTT--rT'1"TTTr---rT"'TTO-rTT~r-Ir-r"T"'T"l
I
+2.0
I-ttti+-++++-+H+I++--+++H-+++I+I-TJ: ~ :2M
+1.0
IIIII
III
1.6
~~ FJR Je!I~T:
~. I III I
SsoC TO +2SoC
~ 12 H+ttt-t-tt-i-HtttIt--1H V @ I / I J 101 ~
=.
~
~
+2SoC TO + 17SoC
IE'SATJI1If{j& ...
~I
0.8
0.4
~~FoL~EII
~*=tittj~mt=pn~V~..~@~V~e~E~1.0~V~/~
1.0
2.0
S.O
10
-2.0
~ 10+-1::l:;l.l1'I,..-',,-+V+-IH-H
20
SO
100
200
~ fo"r-
+2SoC
TO +17S oC
"
-)
ornE~tl±~td~llillLU~
O.S
LU
II I III
Httt+-++++-I+t++tf-H-H-+lf-H-H+-+:A++l
1+I-ttt--+-+++-+VeEISATI@ lell,
V
III
-nrcl
-3.0
0.5
SOO
1.0
+rii
2.0
5.0
10
20
SO
100
200
500
•
Ie, COlLECTOR CURRENT ImAl
Ie, COLLECTOR CURRENT ImA)
NOISE FIGURE
vCE ~ 10 V, TA ~ 25°C
FIGURE 4 - FREQUENCY EFFECTS
FIGURE 5 - SOURCE RESISTANCE EFFECTS
10
II
~
S.O ~H-+-+I-ttt+t-++-+-I-t++ttf-t+-++t-ffiitl
l\
I-N--+-+I-ttt+t-++-+-I-t++ttt-t+-++t-ffiitl
4.0
.
8.0
'""':::>
6.0
"'
;:;
'"
z
~z
4.0
+-
o~~~~~~~~lu,I~lillwlll_~I~~LW
0.1
0.2
O.S
1.0
2.0
S.O
f, FREQUENCY 1kHz)
10
50
20
III
I
20
.
"'V
~
VCE' 10 Vd,
Tr12~o1CI
~
IIII1
0.5
0.2
1.0
-r- -
I-
....
~
",
1.0
[\,r'\
::i!
!:
V
10
~
...c 7.0
2.0
5.0
10
50
20
'"
I
C;b-
100
t'r----- t'-
'"
I I "I
-
TJ • 25°C
I - f . 100 kHz
20
30
3.0
0.2
50
r-....
D.3
0.5 0.7 1.0
2_0 10
5.0 7,0
VR, REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-93
-
~~
5.0
2.0 3.0
5.0 7.0 1~
IC,COLLECTOR CURRENT (MA)
V
FIGURE 7 - CAPACITANCE
30
~
/
"'r-.... I
J
RS, SOURCE RESISTANCE (k OHMS)
VCP 20Vd,
f = 100 MHz
TJ • 25°C
V
ifI
[\
1\
lmA
FIGURE 6 - CURRENT-GAIN BANDWIDTH PRODUCT
600
/
loo.A
'\\
o0.1
100
/
V
~
\
2.0
1.0 H +
.....-R"'I'"I'II+f++-H-HI 111+111+
1111_H-I-HH+Hl1
le~ 100J.tA
~H--+-H-+++++--+-+-++ R, ~ 1.2kn +-+-+-++tffi
1111
f· 1.0 Utz
1
~
'"u::
II
III
IC' 10.A
10
......
20
MD6001,F, MD6002,F, MD6003, MQ6001, MQ6002
FIGURE. -
TURN ON TIME
FIGURE 8 -
I 111111
300
t, "
I I II I
,
t.
"'
3D
20
10
•
5.0 7.0
10
r-...
f'.
20
"
,
f"'".
I"
d
"
---
"
III
300
200
300
200
~
IIIII
I I
I I
30
20
10
""
..
100
::l
70
~
;:::
20
50 70 100
30
Ie. COLLECTOR CURRENT (mAl
200
300
IC/l8 - 20
IC/IS = 10
,
30
20
500
10
5.0 7.0
10
20
30
50 70 100
Ie. COLLECTOR CURRENT (mAl
-30
0:u-
200
300
-30 V
200
n.
-
FIGURE 13 - STORAGE AND FALL
TIME TEST CIRCUIT
FIGURE 12 - DELAY AND RISE
TIME TEST CIRCUIT
P.W.> 200
t(" 2.0 ns
Duty Cycle" 2.0%
.
......
"
II
10
"-
.: 50
'1IW=2i
5.0 7.0
500
VCC=30V _
181=182 _
TJ = 25 0 C
",
!
=~
,,""
'oi"l
300
FALL TIME
"
200
~
111, .....
200
T
300
~
IC/l8=10 _
30
50 70 100
Ie. COLLECTOR CURRENT lmAl
FIGURE 11 -
70
50
20
10
500
lal = 182
TJ = 25 0 C
~100
j
.....
0A.ACTIVE REGION CHARGE
100
5.0 7.0
500
t', -t,-ll8tf
200
I
700
500
STORAGE TIME
500
~
l/
30D
i.--'
30
50 70 100
Ie. COLLECTOR CURRENT lmAl
FIGURE 10 -
VCc-lOV
~J - 250 C
0T. TOTAL CONTROL CHARGE
g 1000
I...
,
I II
2000
~ 100
70
SO
l.A'"
30DD
- - - - VCC' 3OV. VaEloIO" 2.0 V --VCC·10V.VaEloIO"OV Ic/la "10
TJ' 250 C
200
!
CHARGE DATA
5000
500
10k
. TO OSCILLOSCOPE
RISE TIME" 5 0 n.
0--
d
1~o-_""''''.Oo/lk~
_'- ____
-:1>200n.~
t,0<;2.00s
Outy Cycle" 2.0%.
For NPN Test CirCUits, Reverse
DIode and all Voltage Polarities.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-94
----<'l SCOPE
'4 V
....
+-r
.....
IN916
-3.0 V
500
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Collector Current -
Continuous
Total Device Dissipation
@TA= 25°C
Derate above 25°C
PD
Total Device Dissipation
@TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
MD7000
CASE 654-07, STYLE 1
One Die
Both Ole
575
3.29
625
3.57
mW
mWf'C
1.8
10.3
2.5
14.3
Watts
mWf'C
-65 to +200
TJ, Tstg
°c
DUAL
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
One Die
Both Die
Unit
Thermal Resistance, Junction to Case
A8JC
97
70
°CfW
R8JA(1)
304
280
°CfW
Junction to
Ambient
Junction to
Case
64
44
Thermal Resistance, Junction to
Ambient
Coupling Factor
•
NPN SILICON
Refer to MD2218 for graphs.
%
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
30
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 !lAdc, IE = 0)
V(BA)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAdc, IC = 0)
V(BA)EBO
5.0
-
-
Vdc
ICBO
-
-
100
nAdc
40
70
30
60
80
50
-
Characteristic
Off CHARACTERISTICS
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 1.0 mAdc, VCE = 10 Vdc)
(lC = 150 mAdc, VCE = 10 Vdc)
(lC = 300 mAdc, VCE = 10 Vdc)
hFE
-
0.2
0.4
Vdc
VBE(sat)
-
0.95
1.3
Vdc
tr
200
250
-
MHz
Cobo
-
3.5
8.0
pF
Cibo
-
15
30
pF
Collector-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
=
100 kHz)
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 100 kHz)
(2) Pulse Test: Pulse W,dth", 300 !'S, Duty Cycle'" 2.0%.
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
5-95
MAXIMUM RATINGS
Value
Unit
VCEO
30
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAdc
Rating
Collector Current -
•
MD7001,F
MQ7001
Symbol
Collector-Emitter Voltage
Continuous
Total Device Dissipation @ T A = 25°C
MD7001
MD7001F
M07001
Derate above 25°C
MD7001
MD7001F
M07001
Po
Total Device Dissipation @ TC = 25°C
MD7001
MD7001F
M07001
Derate above 25°C
MD7001
MD7001F
M07001
Po
One Die
All Die
600
350
400
660
400
600
MD7001
CASE 654-07, STYLE 1
mW
MD7001F
CASE 610A-04, STYLE
mWrC
3.42
2.0
2.28
3.7
2.28
3.42
2.1
1.25
1.0
3.8
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
9
MQ7001
CASE 607-04, STYLE 1,
Watts
TJ, Tstg
-65 to +200
......
--.-6
1
14
mWrC
Operating and Storage Junction
Temperature Range
~
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
All Die
Equal Power
On. Die
MD7001
MD7001F
M07001
Thermal Resistance, Junction to Ambient
Unit
°CfW
R8JC
83.3
140
175
58.3
70
43.8
292
500
438
270
438
292
Junction to
Ambient
Junction to
Case
85
75
57
55
40
0
0
0
°CIW
R8JA(I)
MD7001
MD7001F
M07001
Coupling Factor
%
MD7001
MD7001F
M07001 (01-02)
(01-03 or 01-04)
(1) R8JA IS measured wIth the deVIce soldered mto a typIcal printed CirCUIt board.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
30
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
50
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
ICBO
-
Characteristic
Typ
Max
Unit
-
-
Vdc
-
Vdc
-
Vdc
100
nAde
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCB = 40 Vde, IE = 0)
ON CHARACTERISnCS(2)
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 150 mAde, VCE = 10 Vde)
(lC = 300 mAde, VCE = 10 Vde)
hFE
40
70
30
Collector-Emitter Saturation Voltage
(IC = 150 mAde, IS = 15 mAde)
VCE(sat)
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-96
50
-
60
-
0.25
0.4
90
Vdc
MD7001,F, MQ7001
ELECTRICAL CHARACTERISTICS (continued) (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Typ
Max
Unit
-
0.88
1.3
. Vdc
fr
200
320
-
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cobo
-
5.8
B.O
pF
Input Capacitance
(VBE = 2.0 Vdc, IC = 0, f = 100 kHz)
Cibo
-
16
30
pF
Base-Emitter Saturation Voltage
(lc = 150 mAdc, IB = 15 mAdc)
VBE(sat)
Min
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
(2) Pulse Test: Pulse Width,,; 300 I's, Duty Cycle'" 2.0"...
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-97
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
30
mAdc
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA=25'C
Derate above 25'C
Po
Total Device Dissipation
@TC=25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
MD7002,A,B
CASE 654-07, STYLE 1
One Die
Both Die
Equal Power
575
3.29
625
3.57
mW
mWI'C
1.8
10.3
2.5
14.3
Watts
mWI'C
'c
-65 to +200
TJ, Tstg
DUAL
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
•
Characteristic
One Die
Both Die
Equal Power
Unit
R8JC
97
70
'CIW
R8JA(I}
304
280
'CIW
Junction to
Ambient
Junction to
Case
84
44
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
NPN SILICON
Symbol
Coupling Factors
Refer to 2N2919 for graphs.
%
(1) R8JA is measured with the device soldered Into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
I
Symbol
Min
Typ
VIBRICEO
40
-
V(BR}CBO
50
-
V(BRIEBO
5.0
-
ICBO
-
-
hFE
40
50
130
170
VCE(sat}
-
0.2
0.35
Vde
VBE(sat)
-
0.8
1.0
Vdc
IT
200
260
-
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, I = 100 kHz)
Cobo
-
2.6
6.0
pF
Input Capacitance
(VBE = 2.0 Vdc, IC = 0, I = 100 kHz)
Cibo
-
2.3
8.0
pF
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2}
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(lc = 10 mAdc, IB = O)
(lC = 10 pAdc, IE = O)
(IE = 10 pAdc, IC = 0)
(VCB = 30 Vdc, IE = O)
-
Vdc
-
Vdc
-
Vdc
100
nAdc
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 100 pAdc, VCE = 10 Vdc)
(lc = 10 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
-
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2}
(lC = 5.0 mAde, VCE = 20 Vdc, f = 100 MHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3}
(lC = 100 pAdc, VCE = 10 Vdc)
hFE1/hFE2
MD7002A
MD7002B
Base-Emitter Voltage Differential
(lC = 100 pAdc, VCE = 10 Vdc)
0.75
0.85
IVBE1-V BE21
MD7002A
MD7002B
-
(2) Pulse Test: Pulse Width"" 300 p.o, Duty Cycle"" 2.0%.
(3) The lowest hFE reading is taken as hFEl lor this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-98
-
1.0
1.0
-
25
15
mVdc
MAXIMUM RATINGS
Symbol
Valua
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAdc
Collector Current - Continuous
Total Device Dissipation
@TA= 25'C
MD7003,A,B
MD7003,AF
MQ7003
Derate above 25'C
MD7003,A,B
MD7003,AF
MQ7003
PD
Total Device Dissipation
@TC = 25'C
MD7003,A,B
MD7003,AF
MQ7003
Derate above 25'C
MD7003,A,B
MD7003,AF
MQ7003
PD
One Die
All Die
Equal Power
550
350
400
600
400
600
3.14
2.0
2.28
3.42
2.28
3.42
MD7003,A,B,AF
MQ7003
,if
MD7003,A,B
CASE 654-07, STYLE 1
mW
MD7003,AF
CASE 610A-04, STYLE ~
9
mWrC
2.0
1.4
2.8
8.0
4.0
4.0
11.4
8.0
16
TJ, Tstg
\
14
DUAL
AMPLIFIER TRANSISTOR
mWrC
Operating and Storage Junction
Temperature Range
~
Watts
1.4
0.7
0.7
I
~,.
MQ7003
CASE 607-04, STYLE 1
•
PNPSILICON
Refer to 2N3810 for curves.
·C
-65 to +200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
All Ole
Equal Power
One Die
MD7003,A,B
MD7003,AF
M07003
Thermal Resistance, Junction to Ambient
Unit
·C/W
R6JC
125
250
250
87.5
125
62.6
319
500
438
292
438
292
Junction to
Ambient
Junction to
Case
83
75
57
55
40
R6JA(1)
·C/W
MD7003,A,B
MD7003,AF
M07003
Coupling Factor
%
MD7003,A,B
MD7003,AF
M07003 (01-02)
(01-03 or 01-04)
a
a
0
(1) R6JA IS measured wIth the deVIce soldered mto a typIcal printed CirCUIt board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 !'Adc, IE = 0)
V(BR)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !'Adc, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
ICBO
-
-
100
nAdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(YCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain(2)
(lc = 100 !'Adc, VCE = 10 Vdc)
(Ic = 10 mAde, VCE = 10 Vdc)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-99
MD7003,A,B,AF, MQ7003
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
0.25
0.35
Vdc
0.6
1.0
Vdc
200
300
-
MHz
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
tr
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE =0, f = 100 kHz)
Cabo
-
3.0
6.0
pF
Input Capacitance
(VBE = 2.0 Vdc, IC
Cibo
-
2.0
8.0
pF
NF
-
2.0
-
dB
0.75
0.85
-
1.0
1.0
-
-
25
15
= 0, f =
100 kHz)
Noise Figure
(lC = 100 pAdc, VCE = 10 Vdc, RS
f = 10 Hz to 15.7 kHz)
•
= 3.0 kohms,
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC = 100 pAdc, VCE = 10 Vdc)
hFE1/hFE2
MD7003A,AF
MD7003B
Base-Emitter Voltage Differential
(lC = 100 pAdc, VCE = 10 Vdc)
IVBE1-V BE21
MD7003A,AF
MD7003B
(2) Pulse Test: Pulse Width"" 300 /JoS, Duty Cycle"" 2.0%.
(3) The lowest hFE reading is taken as hFE1 for this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-100
mV
-
MAXIMUM RATINGS
Rating
MD7007,A,B,F,BF
MQ7007
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAde
Collector Current -
Continuous
One Die
Total Device Dissipation
@TA=25°C
MD7oo7,A,B
MD7oo7F,BF
MQ7007
Derate above 25°C
MD7007,A,B
MD7007F,BF
MQ7oo7
Po
Total Device Dissipation
@TC=25°C
MD7007,A,B
MD7007F,BF
MQ7007
Derate above 25°C
MD7007,A,B
MD7007F,BF
MQ7007
Po
AU Die
Equal Power
mW
575
350
400
625
400
600
3.29
2.0
2.28
3.57
2.28
3.42
1.8
1.0
0.9
2.5
2.0
3.6
10.3
5.71
5.13
14.3
11.4
20.5
MD7007F,BF
CASE 610A-04, STYLE
~
9
mWrC
MQ7007
CASE 607-04, STYLE 1
Watts
DUAL
AMPLIFIER TRANSISTOR
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
7/-
MD7007.A,B
CASE 654-07, STYLE 1
-65 to +200
•
PNPSILICON
°c
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance, Junction to Case
One Die
AU Die
Equal Power
97
175
195
70
87.5
48.8
304
500
438
280
438
292
Junction to
Ambient
Junction to
Case
84
75
57
55
44
0
0
0
ROJC
MD7007,A,B
MD7007F,BF
MQ7007
Thermal Resistance, Junction to Ambient
Unit
0c/w
°CIW
ROJA(1)
MD7007,A,B
MD7007F,BF
MQ7007
Coupling Factors
%
MD7007,A,B
MD7007F,BF
MQ7007 (01-02)
(01-02 or 01-04)
(1) ROJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
50
-
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
ICBO
Characteristic
Unit
OFF CHARACTERISnCS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
-
-
100
30
30
30
15
110
130
75
25
-
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISncs(2)
DC Current Gain
(Ie = 100 pAde, VeE =
(Ie = 1.0 mAde, VeE =
(lC = 10 mAde, VeE =
(Ie = 50 mAde, VeE =
hFE
10 Vde)
10 Vde)
10 Vdc)
10 Vdc)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-101
-
MD7007,A,B,F,BF, MQ7007
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
-
0.38
1.0
Vdc
Base-Emitter Saturation Voltage
(lc = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
-
0.9
1.5
Vdc
fr
300
600
-
MHz
Cobo
-
4.0
8.0
pF
Cibo
-
3.8
10
pF
0.75
0.86
-
1.0
1.0
-
20
10
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
Input Capacitance
(VBE = 2.0 Vdc, IC
= 0, f = 100 kHz)
100 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC = 1.0 mAdc, VCE = 10 Vdc)
•
hFE1/hFE2
MD7007A
MD7007B
Base-Emitter Voltage Differential
(lC = 1.0 mAdc, VCE = 10 Vdc)
IVBE1-VBE21
MD7007A
MD7007B
mVdc
-
(2) Pulse Test: Pulse Width", 300 p.S, Duty Cycle'" 2.0%.
(3) The lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-102
-
MAXIMUM RATINGS
Rating
MD7021,F
MQ7021
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAdc
Collector Current -
Continuous
Total Device Dissipation
@TA= 25"C
MD7021
MD7021F
MQ7021
Derate above 25"C
MD7021
MD7021F
M07021
Po
Total Device Dissipation
@TC = 25"C
MD7021
MD7021F
MQ7021
Derate above 25"C
MD7021
MD7021F
MQ7021
Po
One Die
AUDia
Equal Power
550
350
400
600
400
600
3.14
2.0
2.28
3.42
2.28
3.42
MD7021
CASE 654-07, STYLE 5
mW
MD7021F
CASE 610A·04, STYLE
1~
9
mWrC
MQ7021
CASE 607·04, STYLE 1
1.4
0.7
0.7
2.0
1.4
2.8
8.0
4.0
4.0
11.4
8.0
16
14
COMPLEMENTARY
GENERAL PURPOSE TRANSISTOR
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-""'-4.41""1
Watts
-65 to +200
NPNJPNP SIUCON
"C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
All Die
Equal Power
One Die
MD7021
MD7021F
M07021
Thermal Resistance, Junction to Ambient
Unit
"CIW
RIIJC
125
250
250
87.5
125
62.6
319
500
438
292
438
292
Junction to
Ambient
Junction to
Case
83
75
57
55
40
0
0
0
"CIW
RIIJA(ll
MD7021
MD7021F
M07021
Coupling Factor
%
MD7021
MD7021F
MQ7021 (01-021
(01-03 or 01-041
(11 RIIJA IS measured WIth the devIce soldered mto a typIcal printed CirCUIt board.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.1
Symbol
Min
Typ
Max
Unit
COllector-Emitter Breakdown Voltage(21
(lc = 10 mAdc, IB = 01
V(BRICEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lc = 10 !lAdc, IE = 01
V(BRICBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAdc, IC = 01
V(BRIEBO
5.0
-
-
Vdc
-
-
100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 01
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !lAdc, VCE = 10 Vdcl
(lC = 10 mAdc, VCE = 10 Vdcl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-103
•
MD7021,F, MQ7021
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
0.35
Vdc
1.0
Vdc
320
-
MHz
-
-
6.0
pF
Cibo
-
-
8.0
pF
ton
-
28
-
n.
toff
-
72
-
ns
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAdc)(2)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
-
200
Cobo
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 5.0 mAde, VCE = 20 Vdc, f
Output Capacitance
(VCB = 10 Vdc, IE
Input Capacitance
(VBE = 2.0 Vdc, IC
=
0, f
=
= 0, f =
=
tr
100 MHz)
100 kHz)
100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vdc, VBEloffl
II
Turn·Off Time
(VCC = 30 Vdc, IC
=
= 0.5 Vdc,
IC
=
150 mAde, IBl
=
IB2
150 mAde, IBl
=
=
15 Adc)
15 mAde)
(2) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-104
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MD8001
MD8002
MD8003
Value
Unit
MD8001
MD8002
MD8003
Vdc
VCEO
40
50
60
Collector Current - Continuous
Total Device Dissipation
@TA = 25"C
Derate above 25"C
Po
Total Device Dissipation
@TC=25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
mAde
30
IC
One Die
Both Di.
Equal Power
575
3.29
625
3.57
mW
mWfC
1.8
10.3
2.5
14.3
Watts
mW/"C
CASE 654-07. STYLE 1
-65 to +200
"C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Case
DUAL
AMPLIFIER TRANSISTOR
Symbol
One Die
Max
Both Die
Equal Power
Max
R8JC
97
70
"CIW
R8JA(l)
304
280
"CIW
Junction to
Ambient
Junction to
Case
84
44
Unit
•
NPN SILICON
Refer to 2N2920 for graphs.
Thermal Resistance,
Junction to Ambient
Coupling Factor
%
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
I
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter 8reakdown Voitage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
MD8001
MD8002
MD8003
40
50
60
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
-
-
Vdc
-
-
-
-
50
nAdc
-
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cobo
-
Input Capacitance
(VBE = 2.0 Vdc, IC = 0, f = 100 kHz)
Cibo
-
tr
Current-Gain - Bandwidth Product(2)
(lC = 5.0 mAde, VCE = 10 Vdc, f = 100 MHz)
MATCHING CHARACTERISTICS
Base-Emitter Voltage Differential
(lC = 1.0 mAde, VCE = 10 Vdc)
(2) Puise Test: Pulse Width .. 300
pB,
Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-105
260
2.6
2.3
-
MHz
pF
pF
MHQ918
CASE 632-02, STYLE 1
TO-116
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAdc
Collector Current - Continuous
Transistor
Total
Device
0.65
3.72
1.9
10.88
Watts
mWI'C
QUAD
AMPLIFIER TRANSISTOR
1.3
7.43
4.6
26.3
Watts
mWI'C
NPNSILICON
Each
•
Total Device Dissipation
@TA=25'C
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
'c
Refer to MD918 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC = 3.0 mAdc, IB = 0)
V(BR)CEO
15
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 1.0 !lAdc, IE = 0)
V(BR)CBO
30
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAdc, IC = 0)
V(BR)EBO
3.0
-
-
Vdc
-
-
10
nAdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS(l)
DC Current Gain
(lC = 0.1 mAdc, VCE = 1.0 Vdc)
(lC = 3.0 mAdc, VCE = 1.0 Vdc)
(lC = 10 mAdc, VCE = 1.0 Vdc)
hFE
-
20
110
80
50
-
-
-
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lC = 10 mAdc, IB '= 1.0 mAdc)
VBE(sat)
-
0.84
1.0
Vdc
600
850
-
MHz
0.75
2.0
pF
1.4
2.5
pF
4.0
6.0
dB
0.11
0.4
Vdc
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 140 kHz)
Cobo
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, f = 140 kHz)
Cibo
-
NF
-
Noise Figure
(lC = 1.0 mAde, VCE = 6.0 Vdc, RS = 400 Ohms, f = 60 MHz)
(1) Pulse Test: Pulse W,dth", 300 1<8, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-106
MHQ2222
MPQ2221*
MPQ2222*
MAXIMUM RATINGS
Symbol
Value
Unit
Coliector·Emitter Voltage
Rating
VCEO
30
Vde
Coliector·Base Voltage
VCBO
SO
Vde
Emitter·Base Voltage
VEBO
5.0
Vde
Collector Current -
Continuous
500
IC
Total Device Dissipation
@ TA ~ 25°C
Derate above 25°C
MHQ2222
MPQ2221, MPQ2222
Po
Operating and Storage Junction
Temperature Range MHQ2222
MPQ2221 ,22
MHQ2222
CASE 632-02, STYLE 1
TO-116
mAde
Each
Transistor
Total
Device
0.S5
1.9
Watts
3.72
5.2
10.88
15.2
mWrC
MPQ2221
MPQ2222
CASE 646-06, STYLE 1
QUAD
GENERAL PURPOSE TRANSISTOR
°c
TJ, Tstg
-S5 to +200
-55to +150
NPNSILICON
Refer to MD2218 for graphs.
ELECTRICAL CHARACTERISTICS
(TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
V(BRICEO
40
-
-
V(BR)CBO
SO
-
V(BR)EBO
5.0
-
Unit
OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage(1)
(lC
~
10 mAde, IB
~
0)
(lC ~ 10 /'Ade, IE ~ 0)
Coliector·Base Breakdown Voltage
ICBO
-
-
lEBO
-
MPQ2221
MHQ2222, MPQ2222
(IC ~ 150 mAde, VCE ~ 10 Vde)
(lC ~ 300 mAde, VCE ~ 10 Vde)
Emitter·Base Breakdown Voltage
(IE ~ 10 /'Ade, IC ~ 0)
(VCB ~ 50 Vde, IE ~ 0)
Collector Cutoff Curient
Vde
Vde
50
nAde
-
50
nAde
35
75
-
-
MPQ2221
MHQ2222, MPQ2222
40
100
-
MPQ2221
MHQ2222, MPQ2222
20
30
-
-
-
-
0.4
1.S
-
-
1.3
2.S
200
350
-
(VBE ~ 3.0 Vde, IC ~ 0)
Emitter Cutoff Current
Vde
ON CHARACTERISTICS
DC Current Gain(1)
(lC ~ 10 mAde, VCE
hFE
~
10 Vde)
Coliector·Emitter Saturation Voltage
(lC ~ 150 mAde, IB ~ 15 mAde)
(lC ~ 300 mAde, IB ~ 30 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC ~ 150 mAde, IB ~ 15 mAde)
(lC ~ 300 mAde, IB ~ 30 mAde)
VBE(sat)
-
-
-
Vde
Vde
SMALL·SIGNAL CHARACTERISTICS
IT
Current·Gain - Bandwidth Product(1)
(lC ~ 20 mAde, VCE ~ 20 Vde, f ~ 100 MHz)
MHz
Output Capacitance
(VCB ~ 10 Vde, IE ~ 0, f ~ 1 MHz)
Cobo
-
4.5
8.0
pF
Input Capacitance
(VBE ~ 0.5 Vde, IC
Cibo
-
17
30
pF
Turn·On Time
(VCC ~ 30 Vde, VBE(off) ~ 0.5 Vde,
IC ~ 150 mAde, IB1 ~ 15 mAde)
ton
-
25
-
ns
Turn·Off Time
(VCC ~ 30 Vde, IC ~ 150 mAde,
IB1 ~ IB2 ~ 15 mAde)
toff
-
250
-
ns
~
0, f
~
1 MHz)
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse W,dth"" 300 p.O, Duty Cycle"" 2.0%.
*MPQ2221A and MPQ2222A also available.
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
5·107
•
MHQ2222, MPQ2221, MPQ2222
FIGURE 1 - DELAY AND RISE TIME
EaUIVALENT TEST CIRCUIT
GENERATOR RISE TIME" 2.0 ns
pw" 200 n.
DUTY CYCLE = 21l'l1
200
9. 9V
n
0-
619
o-.d- -I:::...
0.6V
-=
+30 V
J--Ir~::~s
+30 V
DUTY CYCLE = 2.1l'lI
FIGURE 2 - STORAGE TIME AND FALL
TIME EaUIVALENT TEST CIRCUIT
200
....-t--i
SCOPE
SCOPE
Rin> 100 k ohms
Cin" 12pF
RISE TIME" 5 0 ns
~ 500~s--1
Rin> 100 k ohms
-3.0 V
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-108
Cin" 12pF
RISE TIME" 5.0 ns
MHQ2369
MPQ2369
MHQ2369
CASE 632-02, STYLE 1
-
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation
@TA = 25°C
Derate above 25°C
MHQ2369
MPQ2369
PD
Operating and Storage Junction
Temperature Range MHQ2369
MPQ2369
TJ, Tstg
Each
Transistor
Total
Device
0.5
2.86
5.0
1.5
8.58
15
1
MPQ2369
CASE 646-06, STYLE 1
TO·n6
Watts
mWrC
1
QUAD
SWITCHING TRANSISTOR
°C
-65 to +200
-55to +125
NPN SILICON
Refar to MD2369 for graphs.
= 25°C unless otherwise
ELECTRICAL CHARACTERISTICS (TA
noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
-
-
Vdc
-
Vde
Off CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VBE
(lC
(lC
=
=
(IE
=
10 pAde, IC
= 20 Vdc,
IE
= 3.0 Vde, IC
= 0)
10 mAde, IB
10 pAde, IE
= 0)
= 0)
= 0)
= 0)
V(BR)CEO
15
V(BR)CBO
40
V(BRIEBO
4.5
ICBO
-
lEBO
-
-
-
Vde
0.4
pAde
0.5
pAde
-
-
-
-
ON CHARACTERISTICS
DC Current Gain(l)
(lc
(lC
=
=
10 mAde, VCE = 1.0 Vde)
100 mAde, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage
(lc
Base-Emitter Saturation Voltage
=
(lC
=
hFE
20
10 mAde, IB
10 mAde, IB
40
=
=
1.0 mAde)
1.0 mAde)
-
-
0.25
Vdc
VBE(sat)
-
0.9
Vde
fr
450
550
-
MHz
Cobo
-
2.5
4.0
pF
Cibo
-
3.0
5.0
pF
VCE(sat)
SMAU·SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
1 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
=
1 MHz)
0, f
=
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 3.0 Vde, VBE
=
Turn-Off Time
(VCC = 3.0 Vde, IC
10 mAde, IBl
=
ton
1.5 Vde, IC
=
10 mAde, IBl
= 3.0
= 3.0 mAde, IB2 =
mAde)
Ioff
1.5 mAde)
-
(1) Pulse Test: Pulse W,dth,,;; 300 fJS, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-109
9.0
15
-
ns
ns
•
MHQ2906
MPQ2906*
MPQ2907*
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Rating
Collector Current -
•
Continuous
Total Device Dissipation
@TA=25'C
Derate above 25'C
MHQ2906
MPQ2906,
MPQ2907
Each
Transistor
Total
Device
0.65
1.9
Watts
3.72
10.88
mWI'C
6.5
19
Po
Operating and Storage Junction
Temperature Range MHQ2906
MPQ2906,07
mAde
600
IC
MHQ2906
CASE 632·02, STYLE 1
MPQ2906
MPQ2907
CASE 646-06, STYLE 1
TO-116
QUAD
GENERAL PURPOSE
TRANSISTOR
'c
TJ, Tst9
-65 to +200
-55 to +125
PNP SILICON
Refer to MD2904 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
V(BR)CEO
40
V(BR)CBO
60
-
VlBR)EBO
5.0
. Collector Cutoff Current' (VCB = 30 Vde, IE = 0)
ICBO
-
Emitter Cutoff Current (VCB = 3.0 Vde, IE = 0)
lEBO
Characteristic
Typ
Max
Unit
Vdc
-
-
-
50
nAde
-
-
50
nAde
MHQ2906, MP02906
MP02907
35
75
-
(lC = 150 mAde, VCE = 10 Vdc)
MH02906, MP02906
MP02907
40
100
-
(lC = 300 mAde, VCE = 10 Vde)
MH02906, MPQ2906
MP02907
30
50
-
-
-
-
0.4
1.6
-
-
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lc = 10 mAde, IB = 0)
(lC = 10
/'Adc,
IE = 0)
(IE = 10 /'Ade, IC = 0)
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE = 10 Vdc)
hFE
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 300 mAde, IB = 30 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 300 mAde, IB = 30 mAde)
VBE(sat)
-
-
Vde
Vdc
-
-
1.3
2.6
200
350
-
MHz
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1 MHz)
Cobo
-
6.0
8.0
pF
Input Capacitance
(VBE = 2.0 Vdc, IC = 0, f = 1 MHz)
Cibo
-
20
30
pF
Turn-On Time
(VCC = 30 Vdc, IC = 150 mAde, IBl = 15 mAde)
ton
-
30
-
ns
Turn-Off Time
(VCC = 6.0 Vde, IC = 150 mAde, IBl = IB2 = 15 mAde)
toff
-
100
-
ns
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse W,dth.; 300 1Jil, Duty Cycle = 2.0%.
*MP02906A and MPQ2907A also available.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-110
MHQ2906,· MPQ2906, MPQ2907
FIGURE 1 - DELAY AND RISE
TIME TEST CIRCUIT
FIGURE 2 - STORAGE AND FALL
TIME TEST CIRCUIT
-30
INPUT
Zo· 50"
PRF· 150 PPS
RISE TIME" 2.0
+15 V
200
n,
10k
TO OSCILLOSCOPE
RISE TIME
~
SOns
50
INPUT
Zo=50n
PRF • 150PPS
RISE TIME.; 10",
1.0 k
37
TO OSCI LLOSCOPE
RISE TIME" 5.0 ns
10k
50
-6.0
lN916
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-111
MHQ3467
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Ic
1.0
Ade
Collector Current -
•
Continuous
Total Device Dissipation
@TA= 25'C
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 632-02, STYLE 1
TO-116
-
Each
Total
Transistor
Device
0.9
5.14
2.7
15.4
mWrC
QUAD
MEMORY DRIVER TRANSISTOR
1.8
10.3
6.3
36
Watts
PNP SILICON
mWrC
-55 to +200
1
Watts
·C
Refer to MD3467 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CBO
40
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
5.0
-
-
Vde
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
-
200
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
-
200
nAde
20
-
-
-
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 500 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage(1)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
-
0.23
0.5
Vde
Base-Emitter Saturation Voltage(1)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
-
0.9
1.2
Vde
125
190
-
MHz
SMALL-5IGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product(1)
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1 MHz)
Cobo
-
10
25
pF
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 1 MHz)
Cibo
-
55
80
pF
-
40
ns
-
90
ns
SWITCHING CHARACTERISTICS
Turn-On Time
(lc = 500 mAde, IB1 = 50 mAde)
ton
Turn-Off Time
(lC = 500 mAde, IBI = IB2 = 50 mAde)
toff
-
(1) Pulse Test: Pulse Width", 300 p,s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-112
MHQ3546
MPQ3546
MHQ3546
CASE 632-02, S T Y L E "
TO-116
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
15
Vde
VEBO
4.5
Vde
IC
200
mAde
CASE 646-06, STYLE_ _
Watts
1~mn~~
Rating
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
@TA= 25'C
Derate above 25'C
Each
Transistor
Total
Device
0.5
2.86
4.0
1.5
8.58
12
Po
MH03546
MP03546
Operating and Storage
Junction
Temperature Range
14
1
MPQ3546
mWFC
1
QUAD
'c
TJ, Tstg
SWITCHING TRANSISTOR
-65 to +200
-55to +150
MH03546
MP03546
PNPSILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lC = 10 mAde, IB = 0)
(lc = 10 !lAde, IE = 0)
(IE = 10 !lAde, IC = 0)
(VCB = 10 Vde, IE = 0)
(VBE = 3.0 Vde, IC = 0)
V(BR)CEO
12
-
V(BR)CBO
15
-
V(BRIEBO
4.5
(CBO
-
lEBO
-
-
Vde
-
0.1
!lAde
-
0.1
!lAde
0.25
Vde
Vde
ON CHARACTERISTICS
-
DC Current Gain(1)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = lOa mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde,lB = 1.0 mAde)
VCE(sat)
-
-
Base-Emitter Saturation Voltage
(lc = 10 mAde,lB = 1.0 mAde)
VBE(sat)
-
-
0.9
Vdc
tr
600
1000
-
MHz
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Cobo
-
2.0
6.0
pF
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 1.0 MHz)
Cibo
-
3.5
8.0
pF
Turn-On Time
(VCC = 2.0 Vde, VBE(off) = 3.0 Vde,
Ie = 30 mAde, IBl = 1.5 mAde)
ton
-
15
-
ns
Turn-Off Time
(Vce = 2.0 Vde, IC = 30 mAde,
IBl = IB2 = 1.5 mAde)
toff
-
25
-
ns
30
15
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lC = 10 mAde, VCE = 10 Vde, f = lOa MHz)
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse Width", 300 1'8, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-113
•
MHQ3798
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Rating
Collector Current -
Continuous
50
IC
Each
II
Total Device Dissipation
@TA=25°C
Derate above 25°C
Po
Total Device Dissipation
@TC = 25·C
Derate above 25°C
Po
Transistor
0.5
2.86
1.5
8.58
s
Operating and Storage Junction
Temperature Range
mAde
Total
Device
1.0
5.71
Watts
mWrC
QUAD
AMPLIFIER TRANSISTOR
Watts
mWrC
3.5
20
PNP SILICON
·C
-65 to +200
TJ,1 tg
CASE 632-02, STYLE 1
TO-116
Refer to 2N3810 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.1
I
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
40
-
-
Vde
V(BR)CBO
60
-
V(BR)EBO
5.0
-
-
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
=
(lc
= 0)
= 0)
10 !LAde, IE
(IE = 10 ,",Ade, IC
= 50 Vde, IE = 0)
= 3.0 Vde, IC = 0)
(VCB
(VSE
ICBO
IESO
-
Vde
Vde
10
nAde
20
nAde
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 10 !LAde, VCE = 5.0 Vde)
(lC = 100 ,",Ade, VCE = 5.0 Vde)
(lC = 500 !LAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
-
hFE
100
150
150
125
Collector-Emitter Saturation Voltage
(lC = 100 ,",Ade, IS = 10 !LAde)
(lC = 1.0 mAde, IS = 100 !LAde)
VCE(sat)
Sase-Emitter Saturation Voltage
(lC = 100 !LAde, IS = 10 !LAde)
(lC = 1.0 mAde, IS = 100,",Ade)
VSE(sat)
-
-
Vde
-
-
0.2
0.25
-
-
-
-
-
0.7
0.8
fr
-
130
-
MHz
Cobo
-
2.3
-
pF
Cibo
-
5.5
-
pF
NF
-
2.5
-
dS
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Sandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vde, f
=
100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VSE = 0.5 Vde, IC
= 0, f =
1.0 MHz)
Noise Figure
(lc = 100 !LAde, VCE = 10 Vde, RS
f = 10 Hz to 15.7 kHz)
= 3.0
kohms,
(1) Pulse Test: Pulse Width", 300 ,",s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-114
MHQ4002A
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Emitter Voltage
VCES
70
Vde
Collector-Base Voltage
VCBO
70
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
1.5
Ade
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA= 25'C
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
Each
Transistor
Four
Transistors
Equal Power
750
4.3
2500
14.3
mW
mWfC
1.2
6.86
4.0
22.8
Watts
mWfC
1
QUAD
MEMORY DRIVER TRANSISTOR
NPN SIUCON
·C
-55 to +200
TJ, Tstg
CASE 632-02, STYLE 1
TO-116
Refer to MD3725 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Svmbol
Min
Typ
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
45
-
-
Vde
Colleetor·Emitter Breakdown Voltage
(lC = 10 pAde, VBE = 0)
V(BR)CES
70
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 I-'Ade, IE = 0)
V(BR)CBO
70
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 I-'Ade, IC = 0)
V(BR)EBO
6.0
-
-
Vde
-
-
500
nAde
50
30
20
100
60
45
250
-
0.14
0.23
0.36
0.26
0.52
0.95
Vde
0.75
0.88
1.0
0.86
1.1
1.7
Vde
t,-
200
275
-
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
-
5.0
10
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
-
55
70
pF
ton
-
30
40
ns
toff
-
60
75
ns
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
ON CHARACTERISTlCS(1)
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC = 1.0 Ade, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc = 100 mAde, IB = 10 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 10 mAde)
(lc = 500 mAde, IB = 50 mAde)
(lc = 1.0 Ade, IB = 100 mAde)
VBE(sat)
0.8
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC = 0.5 Ade, VBE
= 3.8 Vde,
IBl = 50 mAde)
Turn-Off Time
(VCC = 30 Vde, IC = 0.5 Ade, IBl = IB2 = 50 mAde)
(1) Pulse Test: Pulse Width", 300 I-'S, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-115
•
MHQ4013
MHQ4014
MAXIMUM RATINGS
Rating
MHQ4013 MHQ4014
Unit
VCEO
40
45
Vde
Collector-Emitter Voltage
VCES
60
70
Vde
Collector-Base Voltage
VCBO
60
70
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
1.5
Ade
Collector Current -
II
Symbol
Collector-Emitter Voltage
Continuous
Total Device Dissipation
@TA=25·C
Derate above 25·C
Po
Total Device Dissipation
@TC = 25·C
Derate above 25·C
Po
Operating and Storage Junction
Temperature Range
CASE 632-02, STYLE 1
TO-116
-
Each
Transistor
Four
Transistors
Equal
Power
750
4.3
2500
14.3
mWrC
QUAD
MEMORY DRIVER TRANSISTOR
1.2
6.86
4.0
22.8
Watts
NPN SILICON
mWrC
TJ, Tstg
-55 to +200
1
mW
·C
Refer to MD3725 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
-
-
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lc = 10 !LAde, VBE = 0)
Collector Cutoff Current
40
45
V(BR)CES
MH04013
MH04014
Collector-Base Breakdown Voltage
(lC = 10 !LAde, IE = 0)
Emitter-Base Breakdown Voltage
V(BR)CEO
MH04013
MH04014
60
70
V(BR)CBO
MH04013
MH04014
(IE = 10 !LAde, IC = 0)
(VCB = 50 Vde, IE = 0)
60
70
-
Vde
Vde
Vde
V(BRIEBO
6.0
ICBO
-
-
60
35
25
100
65
50
250
-
0.14
0.23
0.36
0.26
0.52
0.95
Vde
-
0.75
0.88
1.0
0.86
1.1
1.7
Vde
0.8
200
275
-
MHz
-
Vde
500
nAde
ON CHARACTERISTlCS(1)
DC Current Gain
(lc = 100 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC = 1.0 Ade, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VBE(sat)
-
-
-
-
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product(1)
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 1.0 Vde, IE = 0, f = 1 MHz)
Cobo
-
5.0
10
pF
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 1 MHz)
Cibo
-
50
70
pF
Turn-On Time
(VCC = 30 Vde, IC = 0.5 Ade, VBEloffl = 3.8 Vde, IB1 = 50 mAde)
ton
-
20
35
ns
Turn-Off Time
(VCC = 30 Vde, IC = 0.5 Ade, IB1 = IB2 = 50 mAde)
toff
-
50
60
ns
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse Width", 300 JJ.S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-116
MHQ4013, MHQ4014
FIGURE 1 - TURN-ON ANO TURN-OFF SWITCHING TIMES TEST CIRCUIT
TO SAMPLING
OSCILLOSCOPE
2 m ;'100k!1
'r< 1 0 ns
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-117
MHQ6001
MHQ6002
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Collector Current - Continuous
•
Total Device Dissipation
@TA=25'C
Derate above 25'C
Po
Total Device Dissipation
@TC=25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
each
Total
Transistor
Device
0.S5
3.72
1.9
10.88
Watts
mWI'C
1.3
7.43
4.S
2S.3
Watts
mWI'C
CASE 632-02, STYLE 1
TO-116
1
-S5 to +200
QUAD
COMPLEMENTARY TRANSISTOR
NPN/PNP SILICON
'c
Refer to MH02222 for NPN graphs."
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
30
Vde
SO
-
-
V(BR)CBO
-
Vde
V(BR)EBO
5.0
-
-
Vde
ICBO
-
-
20
nAde
'EBO
-
-
30
nAde
MHOS001
MH06002
25
50
-
-
MHOSOOl
MHOS002
35
75
-
(lC = 150 mAde, VCE = 10 Vde)
MHOS001
MHOS002
40
100
-
(lC = 300 mAde, VCE = 10 Vde)
MHOS001
MHOS002
20
30
-
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(lC = 10 mAde, IB = 0)
(lc = 10 pAde, 'E = 0)
(IE = 10 pAde, IC = 0)
(VCB = 50 Vde, IE = 0)
Emitter Cutoff Current (VBE = 3.0 Vde. IC = 0)
ON CHARACTERISTICS
DC Current Gain(1)
(lc = 1.0 mAde, VCE = 10 Vde)
hFE
(lC = 10 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage(l)
Base-Emitter Saturation Voltage(1)
-
-
-
-
-
VBE(sat)
-
fT
(lc = 150 mAde, 18 = 15 mAde)
(lC = 300 mAde, IB = 30 mAde)
VCE(sat)
(lc = 150 mAde, IB = 15 mAde)
(lc = 300 mAde, IB = 30 mAde)
-
-
-
0.4
1.4
Vdc
-
1.3
2.0
Vde
-
-
400
-
MHz
-
S.O
4.5
-
-
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
f = 100 kHz)
Output Capacitance
Input Capacitance
(lc = 50 mAde, VCE = 20 Vde,
(VCB = 10 Vde, IE = 0, f = 1 MHz)
(VBE = 2.0 Vde, IC = 0, f = 1 MHz)
NPN
PNP
Cabo
NPN
PNP
Cibo
-
20
17
-
pF
ton
-
30
-
ns
toff
-
225
-
ns
-
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, VBE = 0.5 Vde,
IC = 150 mAde, IB1 = 15 mAde)
Turn-Off Time
(VCC = 30 Vde, IC = 150 mAde,
'B1 = IB2 = 15 mAde)
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
"Refer to MH02907 for PNP graphs.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-118
-
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Collector Current -
Continuous
Total Device Dissipation
@TA=25'C
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
MPQ918
CASE 646-06, STYLE 1
TO-116
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mWI'C
6.7
0.825
2.4
19.2
Watts
mWI'C
-55to +150
TJ, Tstg
1
'c
QUAD
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
•
NPN SILICON
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
134
'C/W
'C/W
Coupling Factors
Ql-04 or 02-Q3
01-02 or 03-Q4
34
2.0
70
26
%
%
Refer to MD918 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Min
Typ
Max
V(BR)CEO
15
V(BR)CBO
30
-
V(BR)EBO
3.0
ICBO
-
-
hFE
-
110
80
50
-
VCE(sat)
-
0.11
0:4
Vde
VBE(sat)
-
0.84
1.0
Vde
t,.
600
850
-
MHz
Cobo
-
0.75
1.7
1.1
2.0
pF
4.0
6.0
dB
Symbol
Characteristic
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector· Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(lc = 3.0 mAde, IB = 0)
(lC = 1.0 !lAde, IE = 0)
(IE = 10 /'Ade, IC = 0)
(VCB = 15 Vde, IE = 0)
Vde
Vde
-
Vdc
10
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 0.1 mAde, VCE = 1.0 Vde)
(lC = 3.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
20
(lC = 10 mAde, IB = 1.0 mAde)
(lc = 10 mAde, IB = 1.0 mAde)
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
f = 100 MHz)
Output Capacitance
Input Capacitance
Noise Figure
(lc = 4.0 mAde, VCE = 10 Vde,
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
(VBE = 0.5 Vdc, IC = 0, f = 1 MHz)
Cibo
(lc = 1.0 mAdc, VCE = 6.0 Vde, RG = 400 Ohms, f = 60 MHz)
NF
-
(1) Pulse Test: Pulse Width", 300 itS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-119
pF
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Vciitage
VEBO
4.0
Vde
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation
@TA=25°C
Derate above 25°C
PD
Total Device Dissipation
@TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
MPQI000
CASE 646-06, STYLE 1
TO-116
Each
Transistor
Four
Transistors
Equal Power
650
5.18
1250
10
mW
mWrC
1.0
8.0
3.0
24
Watts
mWrC
-55 to +150
TJ, Tstg
1
°c
QUAD
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
•
Characteristic
Junction to
Ambient
125
41.6
193
100
0c/w
30
2.0
60
24
%
%
Thermal Resistanee( 1) Each Die
Effective, 4 Die
Coupling Factors
NPN SILICON
Junction to
Case
Ql-Q4 or 02-Q3
Ql-Q2 or Q3-Q4
Unit
°CIW
Refer to MD2218 for graphs.
(1) ReJA IS measured wIth the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
20
-
Collector-Base Breakdown Voltage
(IC = 10 pAde, IE = 0)
V(BR)CBO
40
-
-
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
4.0
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
Emitter Cutoff Current
(VEB = 2.0 Vde, IC = 0)
lEBO
Characteristic
Unit
OFF CHARACTERISTICS
Vde
Vde
-
Vde
50
nAde
-
-
50
nAde
50
50
-
-
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 mAde, VCE = 10 Vde)
(lC = 50 mAde, VCE = 10 Vde)
(lC = 150 mAde, VCE = 10 Vde)
hFE
40
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
-
-
0.5
Vde
-
1.3
Vde
-
-
MHz
-
8.0
pF
-
30
pF
SMALL-5IGNAL CHARACTERISTICS
fr
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1 MHz)
Cobo
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 1 MHz)
Cibo
175
-
(2) Pulse Test: Pulse Width .. 300 fJoS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-120
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
500
mAde
Collector Current - Continuous
Total Device Dissipation
@TA = 25"C
Derate above 25"C
Po
Total Device Dissipation
@TC = 25"<:
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
Each
Transistor
Four
Transistors
Equal Power
0.65
5.18
1.25
8.0
Watts
mWf'C
1.0
8.0
3.0
24
Watts
mWf'C
-55to +150
TJ, Tstg
MPQ1500
CASE 646-06, STYLE 1
TO-116
1
QUAD
TRANSISTOR
•
"C
PNP SILICON
THERMAL CHARACTERISTICS
Junction to
Case
Characteristic
Junction to
Ambient
Thermal Resistance(1)
Each Die
Effective, 4 Die
125
41.6
193
100
Coupling Factor
01-04 or 02-03
01-02 or 03-04
30
2.0
60
24
Refer to MP02907 for graphs.
Unit
"CiW
%
(1) Junction to ambient data applies for typical printed circuit board mounting.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, Iii = 0)
V(BR)CEO
20
-
Collector-Base Breakdown Voltage
(lc = 10 ~dc, IE = 0)
V(BR)CBO
40
-
Emitter-Base Breakdown Voltage
(IE = 10 ~dc, IC = 0)
V(BR)EBO
4.0
-
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
lEBO
-
-
50
50
40
100
120
80
Vdc
Vdc
Vde
50
nAdc
50
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 10 mAde, VCE = 10 Vdc)
(lc = 50 mAde, VCE = 10 Vdc)
(lC = 150 mAde, VCE = 10 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
-
-
-
0.22
0.5
Vdc
0.89
1.3
Vdc
150
300
-
MHz
Cobo
-
4.5
B.O
pF
Cibo
-
17
30
pF
SMALL-SIGNAL CHARACTERISTICS
fT
Current-Gain - Bandwidth Product(l)
(lC = 20 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1 MHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
1 MHz)
(1) Pulse Test: Pulse Width .. 300 p.S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-121
MPQ2221, MPQ2222 For Specifications, See MHQ2222lData r - - - - - - - - - - - - - ,
MPQ2369
For Specifications, See MHQ2369 Data
MAXIMUM RATINGS
MPQ2483
Rating
Value
Unit
Svmbol
MPQ2484
Collector-Emitter Voltage
40
Vde
VCEO
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
6.0
Vde
IC
50
mAde
Collector Current -
•
Continuous
Total Device Dissipation
@ TA = 25·C(I)
Derate above 25·C
Po
Total Device Dissipation
@TC = 25·C
Derate above 25·C
Po
Operating and Storage Junction
Temperature Range
Vde
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW'·C
0.825
6.7
2.4
19.2
Watts
mWrC
-55to +150
TJ, Tstg
CASE 646·06, STYLE 1
TO·116
1
QUAD
AMPLIFIER TRANSISTOR
·C
NPN SILICON
(1) Second Breakdown occurs at power levels greater than 3 times the power
dissipation rating.
THERMAL CHARACTERISTICS
Refer to 21\12919 for graphs.
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
134
·C/W
·C/W
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Svmbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Characteristic
TVp
Max
Unit
OFF CHARACTERISTICS
-
Vde
60
-
-
Vde
V(BR)EBO
6.0
-
-
Vde
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
ICBO
-
-
20
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
-
20
nAde
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 0.1 mAde, VCE
=
hFE
5.0 Vde)
MP02483
MP02484
100
200
-
-
(lC
=
1.0 mAde, VCE
= 5.0 Vde)
MP02483
MP02484
150
300
(lC
=
10 mAde, VCE
=
MP02483
MP02484
150
300
5.0 Vde)
Collector-Emitter Saturation Voltage
(lc = 1.0 mAde, IB = 0.1 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(2)
(lc = 100 pAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
VBE(sat)
-
-
-
-
-
-
Vde
-
0.13
0.15
0.35
0.5
-
0.58
0.70
0.7
0.8
IT
50
100
-
Cibo
-
4.0
8.0
Vde
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 pAde, VCE = 5.0 Vde, f
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
= 20 MHz)
1 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-122
MHz
pF
MPQ2483, MPQ2484
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Collector-Base Capacitance
(VCB = 5.0 Vdc, Ie = 0, f = 1 MHz)
Noise Figure
(lC = 10 !05'n '"
.., t- -.:: 1.0 ns
--i06V~
275
1+-300ns
DUTY CYCLE - 2%
•
FIGURE 2 - STORAGE AND FALL TIME
EOUIVALENT TEST CIRCUIT
:9~'r
u
u
;'"
25°C
1.0
J !
-
-
r--
-
,-
- -
-
r-
f- r-
- -
-
--
1- '~
0.7
.....
-, .......
-55°C
0.5
rr-
CE 1.0 V
-VCE"10V
'-
\
:::-.:::
03
0.2
05
'i1
',," ~
0.7
10
20
3.0
50
7.0
10
20
30
50
70
100
200
-"
500
300
IC. COLLECTOR CURRENT (mAl
FIGURE 2 -
"ON" VOLTAGES
FIGURE 3 +16
14
TJ" 25'C
G
1.2
3;
0.8
VBE(sat) @ICIIB" 10
06
VBE@VCE" 1.0 V
~
ffi
./
:>
i
w
1lJ1..--1.
(-55'C
~
....---
O. 2
VCE(,,')@'CIIB' 10
a
10
2.0
5.0
10
~
ilj
20
50
100
200
....
~
500
IC. COLLECTOR CURRENT (rnA)
.,..,./
0VB for VBE
-1.6
11
-f-2.4
05
II
1.0
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-136
,,125,C)
-0.8
=>
....
0.4
05
IIII
(25'C" 150'C) ~
u
to
~>
+0.8
E
1.0
TEMPERATURE COEFFICIENTS
II
II
OVC Ilor )CE~S:')
100
L
200
500
MPQ6001, MPQ6002, MPQ6501, MPQ6502
NOISE FIGURE
(VCE
FIGURE 4 -
= 10 Vdc, T A = 25°C)
FREQUENCY EFFECTS
FIGURE 5 - SOURCE RESISTANCE EFFECTS
6.0
10
"-
0" I'"
50
0
I'
t-.
r-..
0
01
05
1.0
II
1.0
5.0
10
10
II
50
1\
f, fREQUENCY (kHz)
L
;6U
V
'/
r--..
I-"
0
0
0.1
1Jl
1U
)-
o~
100
lo0pAL
V
\
IC 0 100pA
RS 010 kll.
"r-..
Ie'" 1.0 rnA
0
r0-
0
0
01
"-
8. 0
IC 0 10"A
RS, 4 3 kll.
I
f = 10kHz
0.1
05
1.0
1.0
5.0
10
RS,SOURCE RESISTANCE (k OHMS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-137
10
50
100
•
MAXIMUM RATINGS
Symbol
MP06100
MPQ6600
MPQ6100A
MP06600A
Unit
Collector-Emitter Voltage
VCEO
40
45
Vde
Collector-Base Voltage
VCBO
SO
Vdc
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Rating
Collector Current - Continuous
Total Device Dissipation
@TA= 25'C
Derate above 25'C
Po
Total Device Dissipation
@TC=25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
•
MPQ6100,A
STYLE 1
MPQ6600,A
STYLE 2
CASE 646·06
TO·116
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mWf'C
0.B25
6.7
2.4
19.2
Watts
mWf'C
-55to +150
TJ, Tstg
1
QUAD
·C
COMPLEMENTARY PAIR
THERMAL CHARACTERISTICS
TRANSISTOR
Case
Junction to
Ambient
Thermal Resistanee(1) Each Die
Effective, 4 Die
151
52
250
139
'CIW
'CIW
Coupling Factors
34
2.0
70
2S
%
%
Junction to
Characteristic
01-04 or 02,03
01-02 or 03-04
Unit
PNP/NPN SILICON
Refer to MH02483 for NPN Curves.
Refer to MHQ3798 for PNP Curves.
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
-
-
-
MPOS100,6600
MPOS100A,6S00A
50
100
-
-
MPOS100,6600
MPOS100A,6600A
75
150
-
-
MP06100,6S00
MP06100A,6600A
75
150
-
MP061 00,6600
MP06100A,6600A
60
125
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
MPOS100,6600
MP06100A,6S00A
40
45
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
SO
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
Vdc
-
Vde
-
Vdc
10
nAdc
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 100 pAde, VCE = 5.0 Vdc)
hFE
(lc = 500 pAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vdc)
-
Collector-Emitter Saturation Voltage
(lC = 1.0 mAde, IB = 100 pAde)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lC = 1.0 mAde,lB = 100 pAdc)
VBE(sat)
-
-
'T
50
-
-
-
0.25
Vde
0.8
Vdc
-
-
MHz
1.2
1.8
4.0
4.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 pAde, VCE = 5.0 Vde, I = 20 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, I = 100 kHz)
Cobo
PNP
NPN
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-138
pF
MPQ6100,A, MPQ6600,A
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
(TA - 25'C unless otherwise noted)
Symbol
Cibo
100 kHz)
PNP
NPN
NF
Noise Figure
(lC = 100 pAdc, VCE = 5.0 Vdc, RS = 10 kohms,
f = 10 Hz to 15.7 kHz, BW = 10 kHz)
Min
Typ
Max
-
-
8.0
8.0
4.0
-
Unit
pF
dB
(2) Pulse Test: Pulse Width", 300 ps, Duty Cycle", 2.0%.
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-139
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MP06426
MP06427
VCEO
Collector-Base Voltage
VCBO
Value
Vdc
40
50
Emitter-Base Voltage
•
MPQ6426
MPQ6427
Vdc
30
40
MP06426
MP06427
Collector Current -
Unit
VEBO
12
Vdc
IC
500
mAdc
Continuous
Total Device Dissipation
@TA = 25°C(1)
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Each Die
Four Die
Equal Power
500
4.0
900
7.2
825
6.7
2400
19.2
CASE 646-06, STYLE 1
TO-116
-
mW
mWf'C
1
Operating and Storage Junction
Temperature Range
mW
mWf'C
-55to +150
TJ, Tst9
°c
QUAD
DARLINGTON TRANSISTOR
NPN SILICON
(1) Second Breakdown occurs at power levels greater than 3 times the power
dissipation rating.
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
°CIW
°CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS (TA
= 25°C
unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
Vdc
V(BR)CEO
30
40
-
40
50
-
V(BR)EBO
12
-
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
-
lOa
nAdc
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 0)
lEBO
-
lOa
nAdc
Collector-Base Breakdown Voltage
(lC = 100 /lAdc, IE = 0)
MP06426
MP06427
Vdc
V(BR)CBO
MP06426
MP06427
Emitter-Base Breakdown Voltage
(IE = 10 /lAdc, IC = 0)
ON CHARACTERISTlCS(2)
-
DC Current Gain
(lC = 10 mAdc, VCE = 5.0 Vdc)
(lC = 100 mAdc, VCE = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = laO mAdc, IB = 0.1 mAdc)
VCE(sat)
-
1.5
Vdc
Base-Emitter On Voltage
(lc = 100 mAdc, VCE = 5.0 Vdc)
VBE(on)
-
2.0
Vdc
tr
125
-
MHz
8.0
pF
15
pF
5000
10,000
-
SMALL·SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 5.0 Vdc, f
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
Input Capacitance
(VBE = 0.5 Vdc, IC
=
0, f
=
=
100 MHz)
Cobo
100 kHz)
Cibo
100 kHz)
(2) Pulse Test: Pulse Width", 300 p.S, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-140
-
MPQ6426, MPQ6427
NOISE CHARACTERISTICS
(VCE= 5.0Vdc, TA= 25°C)
FIGURE 2 - NOISE CURRENT
FIGURE 1 - NOISE VOLTAGE
0
500
BANDWIDTH = 1 0 H,
RS > 0
20 Or"-..
BANDWIDTH'" 1 0 Hz
7
"
0
IIII
r5~
--
IC-1, ~~A
-.
ilill
lOJ,lA
0
I...........
0
I--
7
5
mtt--
10
0
10
20
50
100 200
lOOpA
1r-
Ie'" 1 OmA
500 1.0k 20k 5.0k 10k 20k
lO/JA
0.0 3
00 2
10
50k lOOk
IIII
20
50
100 200
500 1.0 k 2.0 k 50 kID k 20 k
f. FREQUENCY IH,I
f. FREUUENCY IH,)
FIGURE 3 - TOTAL WIDEBAND NOISE VOLTAGE
20 0
«
'"
':;
0
>
Of-IC= lU"A
~
0
0
z
0
z
~
3:
or-- _\OO~A
f-
_e'
>
-I I
0
0
'\
lO.uA
8.0
b--'I--:
~
V
~-
~
100pA
1"1
20
II
"
/ ' r---
'-....
j
50
10
20
50
100
RS. SOURCE RESISTANCE Ik"l
2.0
"-
40 -lc=10mA
l-
1.0
Bl~o~I'~~'H = 10 ~,,~ 1U k~:
'\
'\
60
f--""
10mA
g
"'co
'"
u:
1
II II III
'\
10
~
./
1
'\
12
~
/
BANDWIDTH", 10 HzTO 157kHz
10 0
50 k 100 k
FIGURE 4 - WIOEBAND NOISE FIGURE
14
I I II IIII
~
/J
L
III
lOOj.lA
200
500
1000
10
5.0
20
10
20
50
100
200
RS. SOURCE RESISTANCE IWI
500 1000
DYNAMIC CHARACTERISTICS
FIGURE 5 - CAPACITANCE
FIGURE 6 - HIGH FREQUENCY CURRENT GAIN
20
40
-
10
VCE = 50 V
tttt
liJ'J l5 c
f'" 100 MHz
TJ'" 25°C
z
~
0
/
2.0
r-...:-....
fZ
0
C,b
"'
"'
co
u
-
~u;
Cob
.......
::«
ill
30
/'
10
08
06
04
:g
0.2
0
0.04
01
0.2
0.4
10
20
4.0
VR. REVERSE VOLTAGE IVOLTSI
10
20
40
05
10
2.0
05
10
20
50
fOO
'C, COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-141
200
500
•
MPQ6501, MPQ6502 For Specifications, See MPQ6001 Data , . . . . . - - - - - - - - - - - - - - - ,
MPQ6600,A
For Specifications, See MPQ6100,A Data.
MAXIMUM RATINGS
MPQ6700
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAde
Collector Current -
•
Continuous
Total Device Dissipation
@ TA = 25·C(I)
Derate above 25·C
Po
Total Device Dissipation
@TC = 25·C
Derate above 25·C
Po
Operating and Storage Junction
Temperature Range
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mWrC
825
6.7
2400
19.2
mW
mWrC
CASE 646-06, STYLE 2
TO·116
1
QUAD
-55 to +150
TJ, Tstg
COMPLEMENTARY PAIR
TRANSISTOR
·C
PNP/NPN SILICON
(1) Second breakdown occurs at power levels greater than 3 times the power
dissipation rating.
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
·cm
·cm
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS
(TA
=
25·C unless otherwise noted.)
Characteristic
Max
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
40
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, Ie = 0)
V(BR)EBO
5.0
-
Vdc
50
nAdc
50
nAdc
Unit
OFF CHARACTERISncs
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
-
ON CHARACTERISnCS(2)
DC Current Gain
(lc = 0.1 mAdc, VCE
(lC = 1.0 mAdc, VCE
(lC = 10 mAdc, VCE
hFE
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
30
50
70
-
-
-
Collector-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
-
0.25
Vdc
Base-Emitter Saturation Voltage
(lC = 10 mAdc, IB = 1.0 mAde)
VBE(sat)
-
0.9
Vdc
fr
200
-
MHz
Cobo
-
4.5
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
Input Capacitance
(VEB = 0.5 Vdc, IC
= 0, f
100 kHz)
Cibo
= 100 kHz)
PNP
NPN
pF
-
-
(2) Pulse Test: Pulse Width .. 300 /LS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-142
10
8.0
MPQ6700
PNP
NPN
FIGURE 1 - DC CURRENT GAIN
&00
&00
---
300
Tr li2&orl
-
200
b::-:
~
2&OC
TJ = 12&OC
300
rl-
2001-
I::'
0
_&&OC
-
- tr-.
j-
...:::-
.-r f-2&OC
0
_&&OC
I~
\.
~~
--VCE=1.0V"\
---VCE=&·OV
10
- - - VCE=1.0V ' \
- - - VCE=&.OV
10
7.0
&.0
0.2
0.5
1.0
2.0
&.0
10
20
50
100
7.0
&.0
0.2
200
0.4
1.0
IC. COLLECTOR CURRENT ImA)
2.0
4.0
10
40
20
100
200
IC. COLLECTOR CURRENT ImAI
FIGURE 2 - "ON" VOLTAGE
10
,UJII
TJ= 25°C
I.
J,J
~Wn'I@lct~
10
k::?
~o
2:
0.6
w
-
VSElonl@ VdE
I.oiv
~
~
~~
P
0.6 =VSElonl@VCE= 1.0 V
w
«
'"
!:;
o
>
-
II 1111
DB
VSEI .. tl@ IC/IS = 10
O.B
./
TJ= 2&OC 1111
'"«
!:;
0.4
0
/
o. 2
o
0.2
2.0
&0
10
20
7
VCEI .. tl@ ICIIS = 10
I
1.0
7
0.2
VCElsat)@ IC/IS = 10
0&
I
04
>
>'
>'
o
&0
100
200
0.2
0.4
1.0
20
40
10
20
100
40
IC. COLLECTOR CURRENT ImA)
IC. COLLECTOR CURRENT ImAI
FIGURE 3 - TEMPERATURE COEFFICIENTS
+2.0
f}
+2. 0
"APPLIES FOR ICIIS" hFE/2 0
.5 +10
>z
II
U
~
8
w
-10
1li
>-
-2.0
~
-
eve for Vee
i
-3.0
0.2
H 111
II
0.5
~
f.-
&0
10
20
100
111111
12&OC to moc
1111
ttttr
"OVC FOR VCEI .. tl
I-&lo~~
III~
w
'"~
~ -2. 0
>-
i
200
--
-1. 0
~
-f"l"ll°\ if "&0
nnlr
8
1111111
2.0
llll1f
"APPLIES FOR Ic/IS"hFE/2.0
II
~
........
+~
~Il~oc
III
1.0
.§. +10
2iW
_55°C to 25D e
w
'">-=>
">
1111111
1111
II 1111
"'OVC for VCE(sat)
w
G
1111111
:>
-3 0
02
.2&OCto :2tC
OVB FOR VSE
Tn!ill
II0.5
1111
10
2.0
&.0
10
20
IC. COLLECTOR CURRENT ImAI
IC. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-143
-55°C to 250C
111111
111111
&0
100
200
•
MPQ6700
PNP
NPN
FIGURE 4 - COLLECTOR SATURATION REGION
1.0
o.8
o.6
IC·1.0 mA
10mA
SQmA
II II
~
TJ" 2SoC
O.OS 0.1
0.2
O.S
1.0 2.0
S.O
10
20
SO
100
o. 2
I'-
0
0005 001 0.02
O.OS 0.1
IS. SASE CURRENT (mAl
•
0.2
0 S 1.0
2.0
S.O
10
20
SO
18. SASE CURRENT (mAl
FIGURE 5 - TURN-ON TIME
SOO
SO 0
30
0-"
200 ........
100
]
70
~ S0
;::
.0
O
IC/~~ =i~oc ........
........
300
"
.......
........
'" ~
.......
........
VSE(Offl"~
0
tr@VCC=3.~
1"4L-
.......
c=-
w
'"~.
~
2.J'V'r-.
ICIIS" 10
TJ= 25°C
'r@VCC"40V
"-
70
0
30
20
"'
I.......
I 'j I I
r-.......
S.O
7.0
10
20
30
SO
70
100
200
20V_
~
Id@VSE(offl"O
S0
3.0
........
"-
r- Tr@VCC"3.0V
10
7. 0
7. 0
S.O
2.0
~
100
]
0
r-...
200 b-
20
30
S.O 70
IC. COLLECTOR CURRENT (mAl
10
20
30
SO
70
100
200
IC. COLLECTOR CURRENT (mAl
FIGURE 6 - TURN,OFF TIME
SO0
SOO
300
200
:g
.......
r-..
w
.0
0
300
_
_
200
100
20
lells"2~
I,@ lellS"
0
0
7.0
5. 0
2.0
-
II IC/IS I- 10
100
0
0
";::
.......
r-...
t's-ts-1J8 t t
VCC" 3.0 V
lSI" IS2
TJ"2SoC
3.0
5.0 7.0
10
iO>
I'---
20
30
......
-
......
50
70
100
g
JO
w
50
";::
30
.........
r-..
Is=ts
I"-
ICAs" 20 1-1-
VCC"40V
lSI" IS2
.....~
ICIIS" 10
r-.:.
r-
......
I,@ICIIS" 10
20
I200
0
7. 0
5.0
20
3.0
5.0 7.0
10
20
30
le/ls - 20
r-50
IC, COLLECTOR CURRENT (mAl
Ir., COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-144
1/81,
r--
70
100
..,
200
MPQ6700
NPN
PNP
FIGURE 7 - CURRENT-GAIN - BANDWIDTH PRODUCT
'" 500
~
~
r-I T~ = ~5bJ I I
VCp20V
~ 300 I-- f = 100 MHz
'"b
~
;li 150
J
~ 100
I
i-
V
200
TJ= 25°C
r- VCE=20V
01--
f'"
~
t=100MHz
V"
L
0
......
~
~
.......
0
V/
II
0
70
V
0
50
0.3
0.5 0.7
1.0
2.0
3.0
10
5.0 7.0
20
05 07
30
1.0
IC, COLLECTOR CURRENT (mA)
2.0
3.0
50 7.0
10
20
30
IC, COLLECTOR CURRENT (mA)
II
FIGURE 8 - CAPACITANCE
7.0
5. 0
10
!---
TJ=1 25
3. 0
z
«
r--
TJ = 25'C
:--
7. 0
...... 1"-
~
~
.t
.~
0
C~b
C,b
I-
~
~~.
2. 0
.......
1. 5
0
1"0
~
1. 0
["COb
.......
O. 7
0.06
0.1
02
0.40.6
1.0
2.0
4.0 6.0
10
20
40 60
VR, REVERSE VOLTAGE (VOLTS)
10
0.04
0.1
0.2
04
1.0
20
4.0
VR, REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-145
10
1'--t-
20
40
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
200
mAdc
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA = 25·C(1)
Derate above 25·C
Po
Total Device Dissipation
@TC = 25·C
Derate above 25·C
Po
Operating and Storage Junction
Temperature Range
•
MPQ6842
CASE 646-06, STYLE 2
TO-116
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mWf'C
825
6.7
2400
19.2
mW
mWf'C
-55to+150
TJ, Tstg
1
·C
QUAD
COMPLEMENTARY PAIR
TRANSISTOR
(1) Second Breakdown occurs at power levels greater than 3 times the power
dissipation rating.
PNP/NPN SIUCON
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
·CIW
·CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS
=
(TA
25·C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
30
V(BR)CBO
30
V(BR)EBO
4.0
ICBO
-
lEBO
-
hFE
30
50
70
Typ
Max
Unit
-
-
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VEB
=
(lc
(IE
(lC
=
=
=
10 mAdc, IB
=
10 ItAdc, IE
10 ItAdc, IC
20 Vdc, IE
= 3.0 Vdc, IC
=
=
0)
0)
0)
= 0)
= 0)
-
-
Vdc
50
nAdc
50
nAdc
-
-
Vdc
ON CHARACTERISTICS(2)
DC Current Gain
(lC
(lC
(lC
=
=
=
0.5 mAdc, VCE = 1.0 Vdc)
1.0 mAdc, VCE = 1.0 Vdc)
10 mAde, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage
O·C .. T .. 70·C)
(lc
Base-Emitter Saturation Voltage
=
(lC
=
0.5 mAdc, IB
0.5 mAde, IB
=
=
0.05 mAde,
0.05 mAdc)
-
-
-
VCE(sat)
-
0.05
0.15
Vde
VBE(sat)
-
0.65
0.9
Vde
200
350
-
MHz
-
3.0
4.5
pF
-
5.0
4.0
10
8.0
SMALL-5IGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product(2)
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
=
0, f
=
100 kHz)
Input Capacitance
(VEB = 0.5 Vde, IC
=
0, f
=
100 kHz)
Cobo
Cibo
SWITCHING CHARACTERISTICS (TA
=
PNP
NPN
25·C VCC
=
pF
50 Vdc)
Propagation Delay Time
(50% Points TPl to TP3)
(50% Points TP2 to TP4)
ns
tpLH
tpHL
-
-
15
6.0
25
15
Rise Time
(0.3 V to 4.7 V, TP3 or TP4)
tr
5.0
25
35
ns
Fall Time
(4.7 V to 0.3 V, TP3 or TP4)
tf
5.0
10
20
ns
(2) Pulse Test: Pulse Width .. 300 /LS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-146
MPQ6842
I
NPN
PNP
FIGURE 1 - DC CURRENT GAIN
500
500
TJ= 125°C
300
300
TJ- ,'2Soci
-
200
z
~ 100
ffi
~
~
::::::-=""
70
50
--
z
~
~.
~~
~ 20
10
0.5
1.0
2.0
5.0
10
20
50
100
50
g
30
2SoC_
\
- - - VCE=1.0V \
- - - VCPS,OV
10
7.0
S.O
0.2
200
~oo;
-55°C
~ 20
- - VCE =1.0V " \
- - - VCE = 5.0 V
7,0
5.0
02
:-
70
~
-:::::-:
... --
1'-\-
0t::f-
~ 100 ~
-
-5SoC
-
30
-I',
~
25 0 C
20
0.4
1.0
Ic, COLLECTOR CURRENT (mAl
2.0
4.0
10
20
40
100
200
IC, COLLECTOR CURRENT (mA)
FIGURE'2 - "ON" VOLTAGE
1.0
g
J~J(~t) @lcJIB=IJ
TJ=2SoC
11m -L:...r-:t:
VBE(On)@VCIE- I.olv
0.8
0
~
1.0
4
O.B
~0
0.6
w
'"'"~
0
>
>'
TJ = 2S 0 CJ
II
ill
./
1111
..-
VaE(sat)@ Ic/lB - 10
~
O. 6 ~BE(On) @VCE= 1.0 V
'"'"~
0.4
~
w
0,4
0
>
>'
/
0.2
o
0.2
1.0
2.0
5.0
10
20
I
VCE('at)@ ICilB = 10
I
IIII
0.5
I
0.2
VCE("t)@ Ic/lB = 10
/
o
SO
100
200
0.2
II
1.0
0.4
2.0
4.0
10
20
40
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
FIGURE 3 - TEMPERATURE COEFFICIENTS
u
">
~
+2. 0
+2. 0
'APPLIES FOR Ic/lB <; hFE/2.0
+1.0
U
II
1111
II
1111
1111111
1111111
~
'OVC for VCE(sat!
~
-1.
'"
-2. 0
0
-3. 0
0.2
0
1"1"1
i
II
O.S
III
1.0
1111111
2,0
5.0
10
20
SO
100
II
1111
111111
111111
!25 0 C to 125°C
tmT
I-s~o~l~
-
0
- -r:ttnJl~oc_
i"iH
OVBfor VaE
1111
'OVC FOR VCE("t)
~
w
'"~
II
0
-55°C to 25°C ...........
:3
~
0
'APPLIES FOR Ic/la <;hFE/2.0
-3. 0
200
0.2
OVB FOR VaE
II
II
0.5
1111
1.0
2.0
S.O
10
III~
2S OC to ~Soc
r-
-550C to 25 0C
20
]JIm100
SO
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-147
111111
200
•
MPQ6842
PNP
NPN
FIGURE 4 - COLLECTOR SATURATION REGION
1.0
I
~
"
o.8
Ie· 1.0 mA
o.6
~
O. 8
~
ffi o. 6
1=
100 mA
~
8 o. 2
.....
IC= 1.0mA
10mA
\
I\.
50mA
100mA
O. 4
ri:
o
\
....
TJ= 25'C
o
~
o.4
o.2
50 mA
10mA
1.0
o
~
TJ= 2S'C
.....
ul
~
0
0.01 0.02
O.OS 0.1
0.2
O.S
1.0 2.0
5.0
10
20
so
o
100
0.005
om
0.02
0.05 0.1
lB. BASE CURRENT (mAl
0.2
0.5
1.0
2.0
S.O
10
20
lB. BASE CURRENT (mAl
FIGURE 5 - SWITCHING TIMES TEST CIRCUIT AND WAVEFORMS
1/4 MC3001 (74H081
22
t-~.---~@)) TP3
NOTES,
1. Unless otherwise noted, all resistors
1160PF-=
carbon composition %. W ±5%, all
capacitors dipped mica ±2%.
2. Use short interconnect wiring with
good power and ground busses.
3. TP1 thru TP4 are coaxial connectors to
accept scope probe tip and provide a
Pulse
Generator
Oto 5 V
tr.tf ..,:;; 2 ns
PW ~ 200' ns
Period
~
Vee
51
1000 ns
good ground.
4. Device under test is MPQ6842.
5. 160 pF load does not include stray
or scope probe capacitance.
6. Scope probe resistance> 5 kn.
Scope probe capacitance < 10 pF.
-=
-=
1/4 MC3000
174HOO)
TPlorTP2
............---~~1TP4
I
14
-=
TP3 or TP4
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-148
/
tPH~~ --J~
160PF
-=
~
50
MAXIMUM RATINGS
Rating
Symbol MP07041 MPQ7042 MP07043
VCEO
150
200
250
Vde
Collector-Base Voltage
VCBO
150
200
250
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation
@TA = 25"C
Derate above 25"C
Po
Total Device Dissipation
@TC = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
Each
Die
Four Die
Equal Power
750
5.98
1700
13.6
mW
mW/"C
1.25
10
3.2
25.6
Watts
mW/"C
-55to +150
TJ, Tstg
MPQ7041
MPQ7042
MPQ7043
Unit
Collector-Emitter Voltage
CASE 646-06, STYLE 1
TO-116
-
"C
1
QUAD
THERMAL CHARACTERISTICS
Characteristic
AMPLIFIER TRANSISTOR
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
"CIW
"CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
46
5.0
56
10
%
%
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
I
•
NPN SILICON
Refer to MPQ7051 for graphs.
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
MP07041
MP07042
MP07043
Collector-Base Breakdown Voltage
(lC = 100 ,..Ade, IE = 0)
150
200
250
Emitter-Base Breakdown Voltage
(IE = 100,..Ade, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vde, IE = 0)
(VCB = 150 Vdc, IE = 0)
(VCB = 180 Vdc, IE = 0)
ICBO
MP07041
MP07042
MP07043
Vdc
-
150
200
250
-
5.0
-
-
-
-
100
100
100
V(BR)CBO
MP07041
MP07042
MP07043
-
-
-
-
-
Vdc
Vdc
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
hFE
-
SO
-
-
0.3
0.5
Vdc
VBE(sat)
~
0.7
0.9
Vde
IT
50
80
-
MHz
Cobo
-
2.5
5.0
pF
Cibo
-
40
50
pF
25
40
40
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
45
60
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 20 Vde, IE
Input Capacitance
(VEB = 3.0 Vde, IC
= 0, f =
1.0 MHz)
= 0, f =
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-149
MAXIMUM RATINGS
Symbol MPQ7091 MPQ7092 MPQ7093
Rating
Unit
Collector-Emitter Voltage
VCEO
150
200
250
Vdc
Collector-Base Voltage
VCBO
150
200
250
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Collector Current -
Continuous
Total Device Dissipation
@TA= 25"C
Derate above 25"C
Po
Total Device Dissipation
@TC=25"C
Derate above 25"C
PD
Operating and Storage Junction
Temperature Range
MPQ7091
MPQ7092
MPQ7093
Each
Ole
Four Die
Equal Power
750
5.98
1700
13.6
mW
mWrC
1.25
10
3.2
25.6
Watts
mWrC
-
"C
-55 to +150
TJ, Totg
CASE 646-06, STYLE 1
TO-116
1
QUAD
THERMAL CHARACTERISTICS
II
Characteristic
AMPLIFIER TRANSISTOR
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
"crw
"crw
Coupling Factors
Q1-Q4 or Q2-Q3
Q1-Q2 or Q3-Q4
46
5.0
56
10
%
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I
PNP SILICON
Rater to MPQ7051 for graphs.
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
MPQ7091
MPQ7092
MPQ7093
Collector-Base Breakdown Voltage
(lc = 100 !lAde, IE = 0)
150
200
250
-
150
200
250
-
-
5.0
-
-
-
-
250
250
250
25
35
25
40
55
50
VCE(sat)
-
0.3
0.5
Vdc
VBE(sa!l
-
0.7
0.9
Vdc
IT
50
70
-
MHz
Cobo
-
3.0
5.0
pF
Cibo
-
60
75
pF
V(BR)CBO
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 150 Vdc, IE = 0)
(VCB = 180 Vdc, IE = 0)
ICBO
MPQ7091
MPQ7092
MPQ7093
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
-
-
MPQ7091
MPQ7092
MPQ7093
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
Vde
-
lEBO
Vdc
Vde
nAdc
-
100
nAdc
-
-
ON CHARACTERISTICS
= 1.0 mAdc, VCE = 10 Vdc)
= 10 mAdc, VCE = 10 Vdc)
= 30 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage (lC = 20 mAde, IB = 2.0 mAdc)
Base-Emitter Saturation VOltage (lc = 20 mAdc, IB = 2.0 mAde)
DC Current Gain
(lC
(lC
(lC
hFE
-
-
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 20 Vdc, IE
= 0, f =
Input Capacitance
(VEB = 3.0 Vdc, IC = 0, f
=
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-150
MQ982 For Specifications, See MD982,F Data.
MQl120 For Specifications, See MDl120F Data.
MQ2218,AlMQ2219,A For Specifications, See MD22l8,A,F,AF Data.
MQ2369 For Specifications, See MD2369,A,B Data.
MQ2904IMQ2905A For Specifications, See MD2904,A,F,AF Data.
MQ3251 For Specifications, See MD3250,A,F,AF Data.
MQ3467 For Specifications, See MD3467 Data.
MQ3725 For Specifications, See MD3725,F Data.
MQ3762 For Specifications, See MD3762,F Data.
MQ6001IMQ6002 For Specifications, See MD600I,F Data.
MQ7001 For Specifications, See MD700I,F Data.
MQ7003 For Specifications, See MD7003,A,B,AF Data.
MQ7007 For Specifications, See MD7007,A,B,F,BF Data.
MQ7021 For Specifications, See MD7021,F Data.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-151
•
MQl129
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Rating
Collector Current -
•
Continuous
Total Power Dissipation
@TA = 25°C
Derate above 25°C
Po
Total Device Dissipation
@TC=25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
One Die
All Die
Equal Power
400
2.28
600
3.42
0.9
5.13
3.6
20.5
CASE 607-04, STYLE 1
14
1~
mW
mWrC
DUAL
AMPLIFIER TRANSISTOR
Watts
TJ, Tstg
mWrC
-65 to +200
NPN SILICON
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
One Die
All Die
Equal Power
Unit
R8JC
195
48.8
°CIW
°CIW
438
292
Junction to
Ambient
Junction to
Case
57
55
a
R8JA(I)
Coupling Factors
M01129 (01-02)
(01-03 or 01-04)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I
%
0
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(2)
(lc = 10 mAde, IB = 0)
V(BR)CEO
30
-
-
Vde
Collector-Base Breakdown Voltage
(lc = 10 /lAde, IE = 0)
V(BR)CBO
60
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 /lAde, IC = 0)
V(BR)EBO
5.0
-
-
Vde
-
-
10
10
nAde
/lAde
10
nAde
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA = 150°C)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-152
-
MQ1129
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
60
100
100
100
-
300
120
140
-
Unit
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 10 !lAde, VCE = 10 Vde)
(lC = 100 !lAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(Ic = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
-
Vde
-
0.09
0.1
0.7
0.85
200
250
-
-
3.5
8.0
0.9
0.9
-
1.0
1.0
-
-
5.0
5.0
-
-
0.8
1.0
Vde
SMALL-SIGNAL CHARACTERISTICS
fr
Current-Gain - Bandwidth Product(2)
(lC = 20 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
Cobo
= 0, f =
MHz
pF
100 kHz)
MATCHING CHARACTERISTICS (MD1129, MD1129F)
DC Current Gain Ratio(3)
(lc = lOa !lAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
hFE1/hFE2
Base-Emitter Voltage Differential
(lC = lOa !lAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
IVBEI-VBE21
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 100 !lAde, VCE = 10 Vde, TA = -55 to +25'C)
(lC = lOa !lAde, VCE = 10 Vde, TA = +25 to +125'C)
a(VBEI-VBE2)
mVde
-
(1) RIJJA is measured with the device soldered Into a tYPical printed e!feult board.
(2) Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
(3) The lowest hFE reading is taken as hFEI for this ratio.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-153
-
mVde
•
II
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
5-154
l
3 2
4
ASE 20-113
TO-:'06AF
1 (TO-72) 3 2
CASE 22-113 ! h A S E 27-02
T0-206AA
T0-206AC
(TO-18) 3 2 1 (TO-52)
--
TO-226AE
(1 WATT T0-92)
2
~,C~226AA
1 (//'
23
(T0-92)
:!!l 3!!l ,2 1
CASE 79-02
TO-205AD
(T0-39)
2 1
CASE 79-03
TO-205AF
(T0-39)
=,~,
1
CASE 632-02
(TO-116)
Field-Effect
Transistors
---
The data sheets on the following pages are designed to emphasize those FET's that by virtue of widespread industry use,
ease of manufacture, and consequently low relative cost, merit
first consideration for new equipment design. Package options
from low-cost plastic to metal packages are available.
CAUTION:
Static electricity is a surface phenomenon which most commonly occurs when two dissimilar materials come into contact
and then separate. Electro Static Discharge (ESD) damage of
semiconductor components by operating personnel is quickly
becoming a very prominent and significant problem. From simple
bipolar designs to sensitive MOSFET structures, ESD has its
unforgiving effect of degradation or destruction.
Motorola believes it is important to extend an emphasizing
note of cautiousness when handling and testing ANY FET product. Precautions include, but are not limited to, the implementation of static safe workstations and proper handling techniques
(see below). Additionally, it is very importantto keep FET devices
in their antistatic shipping containers and away from any staticgenerating materials.
HANDLING CONSIDERATIONS:
MOS Field-Effect Transistors, due to their extremely high input
resistance, are subject to potential damage by the accumUlation
of excess static charge. To avoid possible damage to the deviges
while handling, testing, or in actual operation, the following procedure should be followed:
1. The leads of the devices should remain wrapped in the
shorting spring except when being tested or in actual operation to avoid the build-up of static charge.
2. Avoid unnecessary handling; when handled, the devices
should be picked up by the can instead of the leads.
3. The devices should not be inserted or removed from circuits with the power on as transient voltages may cause
permanent damage to the devices.
6-1
•
2N2843
2N2844
CASE 22-03, STYLE 12
TO-1S (TO-206AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc·
Drain Current
10
50
mA
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
300
1.7
mW
mWrC
Tsta
- 60 to + 200'C
'C
Storage Temperature Range
•
ELECTRICAL CHARACTERISTICS
(TA
=
3
II
2
,!,~''"'~'
1
1 Source
JFET
GENERAL PURPOSE
P-CHANNEL -
DEPLETION
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
-
Vdc
10
nA
1.7
Vdc
19k,.
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 j./A)
Gate Reverse Current
(VGS = 5.0 V)
IGSS
Gate Source Cutoff Voltage
(VDS = - 5.0 V. 10 = -1.0 j./A)
VGS(off)
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = -5.0 V)
SMALL-5IGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = -5.0 V, f = 1.0 kHz)
input Capacitance
(VDS = -5.0 V, VGS
= 1.0 V, f
IYfsl*
2N2843
2N2844
Ciss
2N2843
2N2844
= 140 kHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = -5.0 V, f = 1.0 kHz, RG = 1.0 meg)
'Pulse Width", 630 ma, Duty Cycle = 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-2
540
1400
-
-
17
30
",mhos
pF
2N3330
CASE 20-03, STYLE 5
TO-72 (TO-206AF)
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Reverse Gate-Source Voltage
Gate Current
Total Device ~issipation @ TA
Derate above 250C
= 25'C
Storage Temperature Range
Symbol
Value
Unh
VOG
20
Vdc
VGSR
20
Vdc
IG
10
mAdc
Po
0.3
1.7
Watts
mWrC
Tsta
-65 to +200
·C
,/
2~a~nca.e
Gat~
1 Source
4
JFET
AMPLIFIER
P..cHANNEL - DEPLETION
Refer to 2N5460 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
20
-
-
10
10
nAdc
pAdc
2.0
6.0
mAde
6.0
Vdc
BOO
Ohms
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 10 pAdc, VOS = 0)
Gate Reverse Current
(VGS = 10 Vdc, VOS = 0)
(VGS = 10 Vdc, VOS = 0, TA = 150'C)
IGSS
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(l)
(VOS = -10 Vdc, VGS = 0)
lOSS
Gate-Source Voltage
(VOG = -15 Vdc, 10 = 10 pAdc)
VGS
Drain-Source Resistance
(10 = 100 pAdc, VGS = 0)
ros
-
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance(l)
(VOS = -10 Vdc, 10 = 2.0 mAde, f = 1.0 kHz)
(VOS = -10 Vdc, 10 = 2.0 mAde, f = 10 MHz)
IYfsl
Output Admittance
(VOS = -10 Vdc, 10 = 2.0 mAde, f = 1.0 kHz)
IVosl
Reverse Transfer Conductance
(VOS = -10 Vdc, 10 = 2.0 mAde, f = 1.0 kHz)
IVrsl
Input Conductance
(VOS = -10 Vdc, 10 = 2.0 mAdc, f = 1.0 kHz)
IVisl
Input Capacitance
(VOS = -10 Vdc, VGS = 1.0 Vdc, f = 1.0 MHz)
Ciss
,,"mhos
1500
1350
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = - 5.0 Vdc, 10 = 1.0 mAdc, RG = 1.0 Megohm, f = 1.0 kHz)
(1) Pulse Test: Pulse Width", 630 ms, Duty Cycle'" 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-3
-
3000
-
40
,,"mhos
0.1
,,"mhos
0.2
,,"mhos
20
pF
II
2N3331
CASE 20-03, STYLE 5
TO-72 (TO-206AF)
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
RatIng
VOS
20
Vdc
Drain-Gate Voltage
VOG
20
Vdc
Gate-Source Voltage
VGS
20
Vdc
Po
300
1.7
mW
mWrC
Tstg
-65 to +200
'c
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Storage Temperature Range
,/
2~a~ncase
Gat~
1 Source
4
JFET
LOW-FREQUENCY
P-CHANNEL -
DEPLETION
Refer to 2N5460 for graphs.
II
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
20
-
Vdc
IGSS
-
10
nA
VGS(off)
-
8.0
Vdc
-15.0
mA
800
ohms
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 pAl
Gate Reverse Current
(VGS = 10 V, VOS = 0)
Gate Source Cutoff Voltage
(VOS= -15V.10= -10pA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = -10V,VGS = OV)
lOSS'
Drain-Source Resistance
(10 = -100 pA, VGS = 0)
ros
-5.0
-
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = -10 V, 10 = -5.0 mA. f
=
1.0 kHz)
Output Admittance
(VOS = -10 V, 10
-2.0 mA. f
=
1.0 kHz)
Forward Transfer Admittance
(VOS = -10 V, 10 = -2.0 mA, f
=
10 MHz)
Input Capacitance
(VOS = -10 V, VGS
1.0 MHz)
=
=
1.0 V, f
=
!Yfs!"
2000
4000
J"mhos
!Yos!"
-
100
"mhos
Yfs"
1350
-
"mhos
Ciss
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = -5.0 V, 10
=
-1.0 mA, RG
=
1.0 MO, f
=
1.0 kHz)
'Pulse Width .. 300 !'S, Duty Cycle .. 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-4
-
20
pF
2N3437
2N3438
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
Unit
Symbol
Value
Drain-Gate Voltage
VDG
50
Vdc
Gate-Source Voltage
VGS
50
Vdc
Gate Current
Total Device Dissipation @ TA
Derate above 25·C
=
25·C
Storage Temperature Range
IG
10
mA
PD
300
1.7
mW
mWI'C
Tstg
-65 to +200
·C
JFET
LOW-FREQUENCY
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
V(BR)GSS
50
-
Vdc
-
0.5
nA
-
5.0
2.5
-
4.8
2.3
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0/'A)
Gate Reverse Current
(VGS = -30 V)
IGSS
Gate Source Cutoff Voltage
(VDS = 20 V, ID = 1.0 nA)
VGS(off)
2N3437
2N3438
Gate Source Voltage
(VDS = 20 V, ID = 1.0 p,A)
VGS
2N3437
2N3438
Vdc
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = 20 V)
2N3437
2N3438
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 20 V, f = 1.0 kHz)
Output Admittance
(VOS
= 30 V, f =
Input Capacitance
(VOS = 10 V)
(VOS = 6.0 V)
(VOS = 4.0 V, f
1500
800
IYosl
1.0 kHz)
2N3437
2N3438
Ciss
=
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 10 V, RG
=
1.0 mil, f
p,mhos
IYfsl
2N3437
2N3438
=
1.0 kHz)
'Pulse Width", 630 ms, Outy Cycle'" 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-5
6000
4500
p,mhos
-
20
5.0
-
18
pF
•
2N3459
2N3460
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
2 Drain
,-.;.~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Gate Voltage
Rating
VDG
50
Vdc
Gate-Source Voltage
VGS
50
Vdc
IG
10
mA
PD
300
1.7
mW
mWf'C
Tsta
-65 to +200
°C
Gate Current
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Storage Temperature Range
•
1 Source
JFET
LOW-FREQUENCY/
LOW NOISE
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-50
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 pA)
Gate Reverse Cu rrent
(VGS = -30 V)
IGSS
Gate Source Cutoff Voltage
(VDS = 20 V, ID = 1.0 pA)
VGS(off)
2N3459
2N3460
-
-0.25
nA
Vdc
-3.4
-1.8
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = 20 Volts)
2N3459
2N3460
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 20 Volts, f = 1.0 kHz)
/
if2
............ I--
-O.S
-1.0
-l.S
-2.0
VGS. GATE·SOURCE VOLTAGE (VOLTS)
"-
100
o
-2.S
,
o
0.5
I",
-1.0
-1.5
-2.0
-2.S
VGS. GATE-SOURCE VOLTAGE (VOLTS)
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-19
2N4220,A
thru
2N4222,A
CASE 20-03, STYLE 3
TO-72 (TO-206AF)
,I
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vde
Gate-Source Voltage
VGS
-30
Vde
Drain Current
ID
15
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
PD
300
2
mW
mWI'C
TJ
175
'C
Tsto
-S5 to +200
'C
Junction Temperature Range
Storage Channel Temperature Range
•
ELECTRICAL CHARACTERISTICS (TA
=
3 Gate
2
@L
4
sour~ase
1 Drain
4
JFET
LOW-FREQUENCY, LOW NOISE
N-CHANNEL -
DEPLETION
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
-30
-
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(JG = -10 !-
50
~
20
r-
~
F
j
- .... -'
~
'"
iiitt
~
~VDS
-
~
10
5V, VGS
I
VDS
IOV
Ji.,
./
--
1.0
,
7---
I
Rs~
"
,
I
15V
I
2.0
1.0
10
5.0
~-yt
-::: ~
VGS
... ::-:--;
~
lOY
~
'"~
-.... ':=-- ~-
+f-
i~
5.0
- - Rs~O
~
I-
RD-
15V
VDS
2.0
I
FIGURE 8 - FALL TIME
....
200
100
I'--
r10
VDS
II 1---1 Rs I R,
...,
,,~ c--
.... , ...... ~
..
-
VDS ~VGS ~ 15V
I
"-
....,
~ 5V, VGS ~ lOY -~ ....
II
0.5
10 , DRAIN CURRENT (mAl
-.... ,
50
20
0.5
I
VDS~ 15V,VGs~
500
0-
Rs
I
VGS
I I I I
5V, VGs-10V;> - vDS ~ 15V, VGS ~ 15V
FIGURE 7 - TURN-OFF DELAY TIME
I
RD
I
10, DRAIN CURRENT ImAl
500
200
,0 ,
---- Rs
:t-.
.... ....
P-_ I
- - -- --1:1---1-1.
10, DRAIN CURRENT (mAl
~
, , Rs,
r- ....---
10 , DRAIN CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-26
I I
VGS
lOY
~ ~ ...
,.......
'r.::' 1:.::-,
2.0
1.0
I
VDS
---
:::-t-: 5.0
10
2N4351
FIGURE 9 -
capacitance (Cgs ~ Ciss - Crss ) has no charge. The drain voltage is at VOO, and thus the feedback capacitance (C rss ) is
charged to VOO. Similarly, the drain-substrate capacitance
(Cd(sub)) is charged to VOO since the substrate and source are
connected to ground.
During the turn-on interval, Cgs is charged to VGS (the input
voltage) through RS (generator impedance). Crss must be discharged to VGS -- VO(on) through RS and the parallel combination of the load resistor (RO) and the channel resistance (rds)'
In addition, Cd(sub) is discharged to a low value (VO(on))
through RO in parallel with rds' During turn-off this charge flow
SWITCHING CIRCUIT and WAVEFORMS
8.2 k
SET VD'
10 V
IN ~AA---.l
10k
··;5k~~~
-
HOV
OUTPUT TO SAMPLING
OSCILLOSCOPE
2N435l
50
~--------lO~'--------~
is reversed.
t,-=4<2n,
Vi,
Predicting turn-on time proves to be somewhat difficult since
the channel resistance (rds) is a function of the gate-source voltage (VGS). As Cgs becomes charged, VGS is approaching Yin
and rds decreases (see Figure 4) and since Crss and Cd(sub) are
charged through rds, turn-on time is quite non-linear.
If the charging time of Cgs is short compared to that of Crss
and Cd(sub), then rds (which is in parallel with RO) will be low
compared to RO during the switching interval and will largely
determine the turn-on time. On the other hand, during turn-off
rds will be almost an open circuit requiring Crss and Cd(sub) to
be charged through RO and resulting in a turn-off time that is
long compared to the turn-on time. This is especially noticeable
for the curves where RS ~ 0 and Cgs is charged through the
pulse generator impedance only.
The switching curves shown with RS ~ RO simulate the
switching behavior of cascaded stages where the driving source
impedance is normally the same as the load impedance. The set
of curves with RS = 0 simulates a low source impedance drive
such as might occur in complementary logic circuits.
DUTY CYCLE'" 2%
10V
VD,
The switching characteristics shown above were measured in
a test circuit similar to Figure 10. At the beginning of the switching interval, the gate voltage is at ground and the gate-source
AGURE 10 -
R,
SWITCHING CIRCUIT MOSFET EQUIVALENT MODEL
,
___ _
VD'
~~C-~--+----'--~--~
LJ'~_-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6·27
•
2N4352
CASE 20-03, STYLE 2
TO-72 (TO-206AFI
,/
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
VOS
25
Vdc
Orain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
±30
Vdc
Orain Current
10
30
mAde
Total Oevice Oissipation @ TA = 25'C
Oerate above 25'C
Po
300
1.7
mW
mWrC
Total Oevice Oissipation @ TC = 25'C
Oerate above 25'C
Po
800
4.56
mWrC
Rating
•
4
MOSFET
SWITCHING
mW
Junction Temperature Range
TJ
175
·C
Storage Temperature Range
Tsta
-65 to +175
·C
1 Source
P-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)OSX
-25
-
Vdc
-10
-10
nAdc
pAdc
±10
pAdc
-5.0
Vdc
-1.0
V
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(10 = -10 pA, VGS = 0)
Zero-Gate-Voltage Orain Current
(VOS = -10 V, VGS = 0) TA = 25'C
TA = 150'C
lOSS
Gate Reverse Current
(VGS = ±30 V, VOS = 0)
IGSS
-
ON CHARACTERISTICS
Gate Threshold Voltage
(VOS= -10V,10= -10pA)
VGS(Th)
Orain-Source On-Voltage
(10 = -2.0 mA, VGS = -10 V)
VOS(on)
On-State Orain Current
(VGS = -10VOS = -10V)
10(on)
-1.0
-3.0
-
mA
SMALL-SIGNAL CHARACTERISTICS
Orain-Source Resistance
(VGS = -10 V, 10 = 0, f = 1.0 kHz)
rds(on)
1000
600
ohms
-
JLmho
Forward Transfer Admittance
(VOS = -10 V, 10 = 2.0 mA, f = 1.0 kHz)
iYfsi
Input Capacitance
(VOS = -10 V, VGS = 0, f = 140 kHz)
Ciss
-
5.0
pF
Reverse Transfer Capacitance
(VOS = 0, VGS = 0, f = 140 kHz)
Crss
-
1.3
pF
Orain-Substrate Capacitance
(VO(SUB) = -10 V, f = 140 kHz)
Cd(sub)
-
4.0
pF
tdl
-
45
ns
tr
-
65
ns
td2
-
60
ns
tf
-
100
ns
SWITCHING CHARACTERISTICS
Turn-On Oelay
(Figures 5)
Rise Time
(Figures 6)
Turn-Off Oelay
(Figures 7)
10 = -2.0 mAde, VOS = -10 Vdc,
VGS = -10 V)
(See Figure 9, Times Circuit Oetermined)
Fall Time
(Figures 8)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-28
2N4352
FIGURE 1 -
FOWARD TRANSFER ADMITTANCE
5000
r--
f
~ 2000
r--
!wiv
V!s
1 kHz
0
TA
~~
r--..
25°C
VI--"
1
1\
,/
w
u
/1--'
z
g 1000
~
~
700
}
500
300
V
V
/
200
-0.1
-0.2
-0.5
- \.0
-5.0
-2.0
-10
-20
10 • DRAIN CURRENT (rnA)
FIGURE 2 - TRANSFER CHARACTERISTICS
-20
~A ~ ~55°~
/ '. /
--I
-10
-5
-
r--
!
-2
TA
V
~
-1
lo~O
2000
r71/
f~
in
/. /
~
~ 12~ocll/, Vl7
z
~
,/
./
~ ;:::.- /
FIGURE 3 - DRAIN-SOURCE "ON" RESISTANCE
5000
~/
TA - 25°C
1
~
,./
1kHz
9
u
z
~
~
Voso -10V -
'/
1000
~
""
\
?
~
OJ
z
500
~
,
'\
'\ ........
."'-
J
J
"\.
\
'-'
-P
-05
•
200
..........
TA
0
l25°C
;:1- ---
..........
r-... ~
:---.. r--..
;;;;:;:::
1--'-
-02
Tl-rC
-01
---
'---
100
-2 -3 -4
-5
6 -7
~8
- 9 -10 -11 -12
13
~-14
-2 -3 -4
-15
-5 -6
-) -8 --9 -10 -11 -12 -13
VGS • GATE~SOURCE VOLTAGE (VOLTS)
VGS • GATE~SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-29
~-14
-15
2N4352
FIGURE 4 - "ON" DRAIN-SOURCE VOLTAGE
-4.0
\
"\
J
10 1-10mA
),.
\
\
TA 1 25 oC
'\.
I'-..
\
-3.0
\
'\.
10 - - 500 ItA
"'-..
-0
-5
-3
""'-.
--
\
\
f'.-..
..........
-SmA
10
I,
'"
10 , ·-2 mA
.\
-1.0
\
~
-- --
.........
""-
--I-
-..........
-9
-7
-11
-- ----
-13
-15
Vss. GATE-SOURCE VOLTAGE (VOLTSI
SWITCHING CHARACTERISTICS
(T" = 25°C)
FIGURE 5 - TURN-ON DELAY TIME
FIGURE 6 - RISE TIME
100
g
100
Rs
...
50
-
...
w
'"
'"
~z
~
;:
0
- - - Rs
-~
20
Vos
10
Vo;~V~s~-!5VI
~
lJ~ .:; ;.:-
Vss
;=
~
~
'"
oJ
e- ~_.Vos
I-
:;
10Vand
Vss
I
-2.0
-1.0
Vos
~
Vss
~
---Rs
7'"
~
-15V -
30
Vos
-5.0
10
-0.5
-10
-1.0
~
'"
100
.....
-~- ~s~ R~
~
Vos
~
50
~
20
--
10
Vos - VG -
~
j
-
-2.0
- ---
~
IOV
-1.0
-10
-5.0
I
I
Vss
l5V
~
?"'!-
.? ~--
200
g
w
;=
Rs
~
,'"
100
'"
-
::j
'"
50
,
-2.0
-5.0
20
-10
t<
:::-...,..........
..... -....
Vos
-....
~
Vss
-
-1.0
-2.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-30
~
-15V
-
I
-0.5
10. DRAIN CURRENT (mAl
10• DRAIN CURRENT (mAl
0
--- Rs= Ro
Vos~Vss~ -lOY ~ ~S r.:::
..... F--::: ::=:t::
.;.
10
-0.5
-
-"'-~
1'"-
500
0
Rs
-
-
-lOY /"
FIGURE 8 - FALL TIME
FIGURE 7 - TURN-OFF DELAY TIME
~
~
10• DRAIN CURRENT (mAl
500
;=
Vss
20
10• DRAIN CURRENT (mAl
200
~
~
--~ .....
0
Ro
l5V
Ii
-0.5
....
r...
50
:g
... ".1._
Rs
,...,
70
Ro
-5.0
-10
2N4352
FIGURE 9 -
thus the feedback capacitance (C rss ) is charged to VOO.
Similarly. the drain-substrate capacitance (Cd (sub» is
charged to VOO since the substrate and source are connected to ground.
Ouring the turn-on interval. Cgs is charged to VGS
(the input voltage) through RS (generator impedance)
(Figure 11). Crss must be discharged to VGS - VO(on)
through RS and the parallel combination of the load
resistor (RO) and the channel resistance (rds) is a function of the gate-source voltage (VGS). As Cgs becomes
charged VGS is approaching Yin and rds decreases (see
Figure 4) and since Crss and Cd(sub) are charged
through rds. turn-on time is quite non-linear.
If the charging time of Cgs is short compared to that
of Crss and Cd(sub). then rds (which is in parallel with
RO) will be low compared to RO during the switching
interval and will largely determine the turn-on time. On
the other hand. during turn-off rds will be almost an
open circuit requiring Crss and Cd(sub) to be charged
through RO and resulting in a turn-off time that is long
compared to the turn-on time. This is especially noticeable for the curves where RS = 0 and Cgs is charged
through the pulse generator impedance only.
The switching curves shown with RS = RO simulate
the switching behavior of cascaded stages where the
driving source impedance is normally the same as the
load impedance. The set of curves with RS = 0 simulates a low source impedance drive such as might occur
in complementary logic circuits.
SWITCHING CIRCUIT and WAVEFORMS
Voo
8.2 k
IN
10k
10 Vt------..---oV OUTPUT TO SAMPLING
--il ~N4352
SET Vos
O-~4"'~'''"k
50
OSCillOSCOPE
o-~~+-----------~~~----
V..
t,~t,-"2ns
PWo IOI's
CYCLE' 2%
~UTY
Vos
-IOV
r--......+--+---------1-~--
The switching characteristics shown above were
measured in a test circuit similar to Figure 10. At the
beginning of the switching interval. the gate voltage is
at ground and the gate-source capacitance (Cgs = Ciss
- Crss ) has no charge. The drain voltage is at VOO. and
FIGURE 10 -
SWITCHING CIRCUIT with MOSFET EQUIVALENT
MODEL
-VDD
Rs
r -- -- -- --
-- -,
vos
~~C-".--~----~--~--¢
Ll-'~---
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-31
•
2N4391
2N4392
2N4393
CASE 22-03, STYLE 3
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
Value
Drain-Source Voltage
VDS
40
Vdc
Drain-Gate Voltage
VDG
40
Vdc
Rating
Unit
Gate-Source Voltage
VGS
40
Vdc
Forward Gate Current
IGF
50
mAde
Total Device Dissipation @ TC = 25'C
Derate above 25'C
PD
1.8
10
mWrC
Operating Junction Temperature Range
Storage Temperature Range
JFET
SWITCHING
Watts
TJ
-65to+175
Tsta
-65to +175
'c
'c
N-CHANNEL -
DEPLETION
Refer to MPF4391 for graphs.
•
'ELECTRICAL CHARACTERISTICS
I
(TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit.
V(BR)GSS
40
-
Vdc
-
0.1
0.2
4.0
2.0
0.5
10
5.0
3.0
-
1.0
-
-
0.1
0.1
0.1
0.2
0.2
0.2
50
25
5.0
150
75
30
-
0.4
0.4
0.4
-
30
60
100
-
30
60
100
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !~-/-/'-+---lf----i
·80 f--
~ ;'----+--+_-__1
~-/-'/+--+--_t---i
-120
r::,~/
.140J----+---4--~/-r--t---t--+----I
'16~1L.20---'1-'-0-0- -•.Jao- - - .s"'0--.-'-40--...J2'-0--'----'+20
Pin. INPUT POWER PER TONE (dB)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VOS = 15 Vdc, Tchann.1 = 25°C)
FIGURE 7 - REVERSE TRANSFER ADMITTANCE (Yrs)
FIGURE 6 - INPUT ADMITTANCE (Yis!
30
5. 0
a
20
3. 0
E
.§ ~ 2.0
I=~
U~.,.",\)- -
0
~\'io
0
&C:a
7
5
/
i
__, II
".@11>.
"IS'"
O.3
10
brs@IDS~
~E
~.§ 1. 0
0
0
ww
50 70 100
200
I, FREQUENCY (MHz)
/
~ ~ 0.0 7
,,/ V
/'
~;g 1.0
.:n~
a;.Q
I
:i ~ o. I
g,g@0.251 0SS
:Ow
Cu
~ ~ O.
0.2
~.§
3,0
~!5 0.
0.3
~~
-E
5.0
U W
~
200
300
500 700 1000
2N4416,A
FIGURE 16 - FORWARD TRANSFER ADMITTANCE jYfg)
FIGURE 17 - OUTPUT ADMITTANCE jYog)
10
0
0
0
9fg@IOSS
0
9fg@0.25 fOSS
o.
O. 3
.§.E
o. 2
E E
0
wW
22
~;:
t:B:i
:e
u
7
5
./
'-''-'
V
/
0
: f---- bog@IOSS.0.2510SS
~:g
o. 1
l/
./
0.0 7
~ 0.0 5
0'"
c(
bfg@IOSS
3
11)1 ./
2
LA
V
1
20
30
~~i=
V
I--
:>:>
brg@0.2510SS
Co
gJ
1.J1
50 70 100
200
f. FREQUENCY (MHz)
300
500 700 1000
gog. lOSS
0.0 3
gog@ 0.25 lOSS
0.0 1
10
20
30
P
200
50 70 100
f. FREQUENCY (MHz)
COMMON GATE CHARACTERISTICS
S-PARAMETERS
= 15 Vdc. T channel = :;!50 C.
Data Points in MHz)
330"
IVDG
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-39
V
1
0.02
300
500 700 1000
•
2N4416,A
FIGURE 20 - S21g
FIGURE 21 - S229
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-40
2N4856,A
thru
2N4861,A
JAN, JTX AVAILABLE
CASE 22-03, STYLE 4
TO-18 (TO-206AAI
MAXIMUM RATINGS
Rating
Symbol
2N4856,A 2N4859,A
2N4857,A 2N4860,A
2N4858,A 2N4861,A
Unit
Drain-Source Voltage
VOS
+40
+30
Vdc
Drain-Gate Voltage
VOG
+40
+30
Vdc
VGSR
-40
-30
Vdc
Reverse Gate-Source Voltage
Forward Gate Current
IGF
Total Device Dissipation
Po
@TA~25°C
Derate above 25°C
Storage Temperature Range
TstQ
50
mAdc
360
2.4
mW
mWFC
-65to +175
°C
,/I
2 Drain
-.~
1 Source
JFET
SWITCHING
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
-40
-30
-
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ 1.0 pAde, VOS ~ 0)
Gate Reverse Current
(VGS ~ -20 Vde, VOS
(VGS ~ -15 Vde, VOS
(VGS ~ -20 Vde, VOS
(VGS ~ -15 Vde, VOS
v(BR)GSS
2N4856A 2N4857A 2N4858,A
2N4859,A, 2N4860A 2N4861,A
IGSS
~
~
~
~
0)
0)
0, TA
0, TA
~
~
2N4856,A 2N4857.A, 2N4858.A
2N4859,A. 2N4860A 2N4861.A
150°C) 2N4856.A, 2N4857 A 2N4858,A
150°C) 2N4859,A. 2N4860A 2N4861.A
Gate Source Cutoff Voltage
(VOS ~ 15 Vde, 10 ~ 0.5 nAde)
Drain Cutoff Current
(VOS ~ 15 Vdc, VGS
(VOS ~ 15 Vde, VGS
-
~
0.25
0.25
0.5
0.5
-10 Vdc)
-10 Vdc, TA
~
-4.0
-2.0
-0.8
150°C)
nAde
pAde
Vde
VGS(off)
2N4856.A, 2N4859.A
2N4857,A. 2N4860.A
2N4858,A. 2N4861.A
IO(otl)
~
-
Vde
-
-10
-6.0
-4.0
-
0.25
0.5
50
20
8.0
100
80
-
0.75
0.5
0.5
-
25
40
60
-
18
10
-
8.0
4.0
3.5
nAdc
pAde
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(l)
(VOS ~ 15 Vdc, VGS ~ 0)
mAdc
lOSS
2N4856.A, 2N4859.A
2N4857A 2N4860.A
2N4858.A, 2N4861.A
Drain-Source On-Voltage
(10 ~ 20 mAdc, VGS ~ 0)
(10 ~ 10 mAdc, VGS ~ 0)
(10 ~ 5.0 mAdc, VGS ~ 0)
Vde
VOS(on)
2N4856.A, 2N4859.A
2N4857,A, 2N4860.A
2N4858.A, 2N4861.A
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" 'Resistance
(VGS ~ 0, 10 ~ 0, f ~ 1.0 kHz)
Input Capacitance
(VOS ~ 0, VGS
rds(en)
2N4856.A, 2N4859.A
2N4857.A, 2N4860,A
2N4858.A,2N4861.A
Ciss
~
-10 Vdc, f
~
1.0 MHz) 2N4856 thru 2N4861
2N4856A thru 2N4861A
Reverse Transfer Capacitance
(VOS ~ 0, VGS ~ -10 Vdc, f
~
1.0 MHz) 2N4856 thru 2N4861
2N4856A, 2N4859A
2N4857A, 2N4858A, 2N4860A, 2N4861A
Ohms
pF
Crss
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-41
pF
•
2N4856,A thru 2N4861,A
ELECTRICAL CHARACTERISTICS
(continued) (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
td(on)
-
6.0
5.0
6.0
6.0
10
8.0
ns
3.0
4.0
10
8.0
ns
SWITCHING CHARACTERISTICS (See Figure 1) (2)
Turn-On Delay Time
Conditions for 2N4856,A, 2N4859,A: 2N4856, 2N4859
2N4856A, 2N4859A
(VOO ~ 10 Vde, 10(on) ~ 20 mAde, 2N4857,2N4860
VGS(on) ~ 0, VGS(off) ~ -10 Vde) 2N4857A, 2N4860A
2N4858, 2N4861
2N4858A,2N4861A
-
Rise Time
Conditions for 2N4857,A, 2N4860,A: 2N4856,A, 2N4859,A
2N4857,A, 2N4860,A
(VOO ~ 10 Vde, 10(on) ~ 10 mAde, 2N4858, 2N4861
VGS(on) ~ 0, VGS(off) ~ - 6.0 Vdc) 2N4858A, 2N4861A
tr
Turn-Off Time
2N4856, 2N4859
Conditions for 2N4858,A, 2N4861,A: 2N4856A, 2N4859A
2N4857,2N4860
(VOO ~ 10 Vde, 10(on) ~ 5.0 mAde, 2N4857A,2N4860A
VGS(on) ~ 0, VGS(off) ~ -4.0 Vde) 2N4858,2N4861
2N4858A; 2N4861A
toff
-
-
-
25
20
50
40
100
80
(1) Pulse Test: Pulse Width ~ 100 ms, Duty Cycle," 10%.
(2) The 10(on) values are nominal; exact values vary slightly with transistor parameters .
•
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
12N4856,A,2N4859.AI
(2N4857.A,2N4860.A1
(2N4858.A,2N4861,A)
INPUT
}--T"'r--.---'tih
OUTPUT
-IOVlO---~;;_~N::~lonl
~
~ ~rVGS(Offl
12N485S,A,2N4859.AI
200ns
12N4857,A,2N48S0,AI -S.OV
___
12N4858,A,2N48S1,AI -4.0 V --: Ion 1--1 loff '--'dlonl --< ~ -l
Idlol!)
H-
tr~ :-I~ ~tf
10%
:
I
I
TEST CIRCUIT
NOTES:
The input waveforms are supplied by a generator with the following characteristics:
Zou,' 50 ohm., Duty Cyel ... 2.0%.
b. waveform.arl monitored on an oscilloscope with the following characttrlltlcl:
,,<0.75 ns, Rln > 1.0 mBgohm, Cin < 2.5 pF.
I.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-42
i -1"'0%::--'
I
VOLTAGE WAVEFORMS
ns
2N5245
2N5246
2N5247
CASE 29-04, STYLE 23
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
VGS
-30
Vdc
IG
50
mA
Gate Current
Total Device Dissipation @ TA
Derate above 25'C (Free Air)
~
25'C
PD
360
2.88
mW
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
Po
500
4.0
mW
mWI'C
lL
260
'c
Lead Temperature
(1/16" from Case for 10 Seconds)
Storage Temperature Range
Tstg
-65 to
+ 150
I! ,~.~"2
lG~e
3
JFET
HIGH-FREQUENCY
AMPLIFIER
N-CHANNEL -
'c
DEPLETION
Refer to 2N4416 for graphs.
ELECTRICAL CHARACTERISTICS (TA
~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-30
-
Vdc
IGSS
-
-1.0
nA
IG1SS
-
-0.5
pA
DFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ -1.0 pA, VDS ~ 0)
Gate Reverse Current
(VGS ~ -20 V, VDS
Gate 1 Leakage Current
(VG1S ~ -20 V, VDS
~
0)
~
0, TA
~
100'C)
Gate Source Cutoff Voltage
(VDS ~ 15 V, ID ~ 10 mAl
Vdc
VGS(off)
2N5245
2N5246
2N5247
-1.0
-0.5
-1.5
-6.0
-4.0
-8.0
5.0
1.5
8.0
15
7.0
24
4500
3000
4500
7500
6000
8000
-
100
1000
-
50
50
70
DN CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS ~ 15 V, VGS ~ 0, Pulsed: See Note 1)
mA
IDSS
2N5245
2N5246
2N5247
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS ~ 15 V, VGS ~ 0, f ~ 1.0 kHz)
Input Admittance
(VDS ~ 15 V, VGS ~ 0)
Output Adm ittance
(VDS ~ 15 V, VGS
Output Conductance
(VDS ~ 15 V, VGS
Re(Yis)
(100 MHz)
(400 MHz)
-
IYosl
~
0, f
~
1.0 kHz)
2N5245
2N5246
2N5247
-
-
Re(yos)
~
0)
p.mhos
IYIsI
2N5245
2N5246
2N5247
2N5245 (100 MHz)
2N5246
2N5247
2N5245 (400 MHz)
2N5246
2N5247
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-43
-
-
-
p.mhos
"mhos
"mhos
75
75
100
100
100
150
II
2N5245,2N5246,2N5247
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25°C unless otherwise noted)
Characteristic
Symbol
Forward Transconductance
Min
Re(Yls)
(VOS ~ 15 V, VGS ~ 0, I ~ 400 MHz)
2N5245
2N5246
2N5247
4000
2500
4000
Max
-
Unit
"mhos
-
Input Capacitance
(VOS ~ 15 V, VGS ~ 0, I ~ 1.0 Mhz)
Ciss
-
4.5
pF
Reverse Transler Capacitance
(VOS ~ 15 V, VGS ~ 0, f ~ 1.0 MHz)
Crss
-
1.0
pF
-
3.0
12.0
IM(Yis)
Input Susceptance
(VOS ~ 15 V, VGS = 0)
1100 MHz)
(400 MHz)
mmho
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS ~ 15 V, 10 = 5.0 mA, R'G ~ 1.0 kil)
NF
Common Source Power"Gain
(VOS ~ 15 V, 10 ~ 5.0 rnA, R'G
Gps
~
1.0 k!l)
•
~
100 ms, Outy Cycle
dB
-
2.0
4.0
18
10
-
dB
IM(YoS)
Output Susceptance
(VOS ~ 15 V, VGS ~ 0)
Note 1: tp
2N5245 (100 MHz)
2N5245 1400 MHz)
-
-
(100 MHz)
(400 MHz)
~
10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-44
"mho
1000
4000
2N5457
2N5458
2N5459
CASE 29-04. STYLE 5
TO-92 (TO-226AA)
2 Source
c!,~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Orain-Gate Voltage
VOG
25
Vdc
Reverse Gate-Source Voltage
VGSR
-25
Vdc
IG
10
mAdc
Po
310
2.82
mW
mWI"C
TJ
125
·C
TS!!L
-65 to + 150
·C
Rating
Gate Cu rrent
Total Oevice Dissipation @ TA
Oerate above 25·C
=
25·C
Junction Temperature Range
Storage Channel Temperature Range
1 Drain
JFET
GENERAL PURPOSE
N·CHANNEL - DEPLETION
Refer to 2N4220 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
-25
-
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -10 !LAdc, VOS = 0)
Gate Reverse Current
(VGS = -15 Vde, VOS = 0)
(VGS = -15 Vde, VOS = 0, TA = 100·C)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 10 nAde)
IGSS
-
Gate Source Voltage
(VOS = 15 Vdc, 10 = 100 !LAdc)
(VOS = 15 Vdc, 10 = 200 !LAde)
(VOS = 15 Vdc, 10 = 400 !LAde)
-0.5
-1.0
-2.0
-
-
VGS
nAdc
-1.0
-200
-6.0
-7.0
-8.0
-
-2.5
-3.5
-4.5
-
1.0
2.0
4.0
3.0
6.0
9.0
5.0
9.0
16
-
2N5457
2N5458
2N5459
Vdc
Vde
VGS(off)
2N5457
2N5458
2N5459
-
-
Vde
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current"
(VOS = 15 Vde, VGS = 0)
mAde
lOSS
2N5457
2N5458
2N5459
SMALL·SIGNAL CHARACTERISTICS
Forward Transfer Admittance Common Source"
(VOS = 15 Vde, VGS = 0, f = 1.0 kHz)
IYlsl
2N5457
2N5458
2N5459
1000
1500
2000
-
/Lmhos
5000
5500
6000
Output Admittance Common Source"
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)
IYosl
-
10
50
/LmhOS
Input Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Ciss
-
4.5
7.0
pF
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
erss
-
1.5
3.0
pF
'Pulse Test: Pulse W,dth"" 630 ms; Outy Cycle"" 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6·45
II
2N5460
thru
2N5465
CASE 29-04, STYLE 7
TO-92 (TO-226AA)
2 Dram
MAXIMUM RATINGS
Symbol
2N5460
2N5461
2N5462
2N5463
2N5464
2N5465
Unit
Drain-Gate Voltage
VOG
40
60
Vdc
Reverse Gate-Source Voltage
VGSR
40
60
Vdc
Rating
Forward Gate Current
Total Device Dissipation @TA
Derate above 25°C
=
25°C
Junction Temperature Range
Storage Channel Temperature Range
•
ELECTRICAL CHARACTERISTICS
(TA
=
~~
1 Source
IG(f)
10
mAde
Po
310
2.82
mW
mWfC
TJ
-65 to + 135
°C
Tstg
-65to +150
°C
JFET
AMPLIFIER
P-CHANNEL -
DEPLETION
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
40
60
-
-
-
-
5.0
5.0
1.0
1.0
0.75
1.0
1.8
-
6.0
7.5
9.0
0.5
0.8
1.5
-
4.0
4.5
6.0
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 10 pAdc, VOS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VOS
(VGS = 30 Vdc, VOS
(VGS = 20 Vdc, VOS
(VGS = 30 Vdc, VOS
V(BR)GSS
2N5460, 2N5461, 2N5462
2N5463, 2N5464, 2N5465
IGSS
= 0)
= 0)
= 0, TA =
= 0, TA =
2N5460, 2N5461, 2N5462
2N5463,2N5464,2N5465
2N5460, 2N5461, 2N5462
2N5463, 2N5464, 2N5465
100°C)
100°CI
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 1.0 pAdc)
Gate Source Voltage
(VOS = 15 Vdc, 10
(VOS = 15 Vdc, 10
(VOS = 15 Vdc, 10
-
-
VGS
= 0.1 mAde)
= 0.2 mAde)
= 0.4 mAde)
2N5460, 2N5463
2N5461, 2N5464
2N5462, 2N5465
nAdc
pAdc
Vdc
VGS(off)
2N5460, 2N5463
2N5461, 2N5464
2N5462, 2N5465
Vdc
-
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = 15 Vdc, VGS = 0,
f = 1.0 kHz)
lOSS
2N5460, 2N5463
2N5461, 2N5464
2N5462, 2N5465
1.0
2.0
4.0
-
mAde
5.0
9.0
16
SMALL-SIGNAL CHARACTERISTICS
Forward Trarisfer Admittance
(VOS = 15 Vdc, VGS = 0, f
=
I'mhos
IYfsl
2N5460, 2N5463
2N5461,2N5464
2N5462, 2N5465
1.0 kHz)
Output Admittance
(VOS = 15 Vdc, VGS
= 0, f =
1.0 kHz)
Input Capacitance
(VOS = 15 Vdc, VGS
=
0, f
=
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, f
=
1.0 MHz)
1000
1500
2000
-
-
IVosl
-
-
Ciss
-
Crss
4000
5000
6000
75
I'mhos
5.0
7.0
pF
-
1.0 .
2.0
pF
NF
-
1.0
2.5
dB
en
-
60
115
nV/v'Hz
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vdc, VGS
= 0, RG =
1.0 Megohm, f
Equivalent Short-Circuit Input Noise Voltage
(VOS = 15 Vdc, VGS = 0, f = 100 Hz, BW
=
=
100 Hz, BW
=
1.0 Hz)
1.0 Hz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-46
2N5460 thru 2N5465
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
FIGURE 1 - VGS(off) = 2.0 VOLTS
FIGURE 4 -
VOSl15V
3.5
:;;:
S
3.0
...
2.5
'"=><.>
2.0
~
"'\
"-
9"
1.5
3000
~
2000
i
:E
c
"'" .""-~V
TA = ·55°C
/
1.0
..............
0.5
0.2
0.4
0.6
I
R::: ~
0.8
1.0
V
1000
z
25°C
125°C
700
~
c
'"
i
1.2
1.4
Vos = 15V_
300
c
~~
f = 1.0 kHz-
~ 200
1.6
1.8
2.0
.t.
0.5
0.3
0.2
~
6
6.0
5.0
4.0
3.0
......:l!
'''\. / 1
"<
""-
25°C
X
........
'--...
.........
......
..............
125°C
~ 1"-. ....... t'....
1.0
1.5
I
TA=-55 0 C
1.0
~ 1000
3.5
4.0
700
f
5000.5
0.7
VIOS =
14 1\
S
12
15
10
'"'"=>
<.>
8.0
z
;;0 6.0
c
'"
9
4.0
2.0
2.0
1.0
3.0
11.~
5.0
kr
Z
7.0
10 ORAIN CURRENT (rnA)
VGS(off) = 5.0 VOLTS
FIGURE 3 16
'-"
VOS-15 V
~
r3.0
i
l
VGS. GATE·SOURCE VOLTAGE (VOLTS)
...
•
.3 7000
VOs= 15 V
2.0
:;;:
4.0
E
0,
...
c
3.0
2.0
~10,OO 0
:;;: 8.0 " ,
S 7.0
z
1.0
FIGURE 5 - VGS(off) = 4.0 VOLTS
FIGURE 2 - VGS(off) = 4.0 VOLTS
'"<.>=>
0.7
10. ORAIN CURRENT (mAt
10
~
...... f-"'"
... 500
VGS. GATE·SOURCE VOLTAGE (VOLTS)
9.
l--"
V
o
9.0
'"
" - . ,
1
........
1.0
0.2
0.1
1.0
0.5
Giss
..............
1\
0
2. o
r-:--
2.0
Crss
10
5.0
5. 0
•
SOURCE RESISTANCE
I ~~~ I: ~ JII
9.0
51
'"
I
;
'"~
'"
u:
'"
2.0
1\
f"'--r--
II
VOS • 15 V
VGS • 0
I • 100 Hz
7.0
6.0
5. 0
'"~
4. ot----
LL~
3. 0
'"
1. 0
III
8.0
RG· 1.0 Megohm
~
r
10
~ 3. 0
'"u:
w
5
'"
u:
40
FIGURE 10 - NOISE FIGURE VERSUS
VERSUS FREQUENCY
w
30
VOS. ORAIN·SOURCE VOLTAGE (VOLTS)
FIGURE 9 - NOISE FIGURE
4.
20
10
10. ORAIN CURRENT (mA)
J\
Coss
UL
10
r---
~
r--
2. 0
......
1. 0
o
10
20
30
50
100
200300 500
1.000
20003000
10.000
1000
RS. SOURCE RESISTANCE (k Ohms)
FIGURE 11 -
ViT
Crss
~I
100
10
1.0
I. FREQUENCY (Hz)
EQUIVALENT LOW FREQUENCY CIRCUIT
'-
I Yls(
Vi
Common Source
VParameters for Frequencies
Below 30 MHz
Vis = jwC iss
Yas = jwCos p* + 1/ross
Yls· Yis (
Yrs"" -jwC rss
*Cosp is Coss in parallel with Series Combination of Giss and Crss.
NOTE:
1 Graphical data IS presented for de conditions. Tabular data IS
gIVen for pulsed conditions (Pulse Width'" 630 ms, Duty Cvcle-
10%1
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-48
10.000
2N5484
thru
2N5486
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
,~-@
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VOG
25
Vdc
VGSR
25
Vdc
10
30
mAde
IG(f)
10
mAde
Po
310
2.82
mW
mW/"C
TJ, Tstg
-65to +150
°c
Orain-Gate Voltage
Reverse Gate-Source Voltage
Drain Current
Forward Gate Current
Total Oevice Oissipation @ TC
Oerate above 25°C
~
25°C
Operating and Storage Junction
Temperature Range
, Drain
JFET
VHF/UHF AMPLIFIER
N-CHANNEL -
DEPLETION
Refer to 2N4416 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-25
Typ
Max
Unit
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ -1.0 !lAde, VOS ~ 0)
Gate Reverse Current
(VGS ~ -20 Vdc, VOS ~ 0)
(VGS ~ -20 Vdc, VOS ~ 0, TA ~ 100°C)
Gate Source Cutoff Voltage
(VOS ~ 15 Vdc, 10 ~ 10 nAdc)
IGSS
-
VGS(off)
-0.3
-0.5
-2.0
2N5484
2N5485
2N5486
-
-
-
-1.0
-0.2
nAdc
!lAdc
Vde
-3.0
-4.0
-6.0
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
IVOS ~ 15 Vdc, VGS ~ 0)
lOSS
2N5484
2N5485
2N5486
1.0
4.0
8.0
mAde
-
5.0
10
20
-
6000
7000
8000
-
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f ~ 1.0 kHz)
Input Admittance
(VOS = 15 Vdc, VGS = 0, f ~ 100 MHz)
(VOS = 15 Vdc, VGS ~ 0, f ~ 400 MHz)
Output Admittance
(VOS = 15 Vdc, VGS
Output Conductance
(VOS = 15 Vdc, VGS
IVOS = 15 Vdc, VGS
= 0, f =
=
15 Vdc, VGS
Re(Yis)
= 0, f = 100 MHz)
= 0, f = 400 MHz)
-
-
-
2N5484
2N5485, 2N5486
2N5484
2N5485
2N5486
-
Re(yos)
Forward Transconductance
(VOS = 15 Vdc, VGS = 0, f
(VOS
3000
3500
4000
IYosl
1.0 kHz)
I£mhos
IYfsl
2(1j5484
2N5485
2N5486
2N5484
2N5485, 2N5486
Re(Yfs)
=
100 MHz)
2N5484
2500
-
= 0, f = 400 MHz)
2N5485
2N5486
3000
3500
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-49
-
I£mhos
100
1000
I£mhos
50
60
75
I£mhos
75
100
-
-
I£mhos
•
2N5484 thru 2N5486
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Charactarlstic
Input Capacitance
(VOS = 15 Vde, VGS
= 0, f =
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, f
Output Capacitance
(VOS = 15 Vdc, VGS
Symbol
Min
Typ
-
-
1.0 kHz)
2N5484
-
-
2.5
3.0
2N5484
-
4.0
-
2N5485, 2N5486
-
-
2.0
2N5485, 2N5486
-
-
4.0
16
-
25
18
10
-
Ciss
1.0 MHz)
Crss
>
=
1.0 MHz)
= 0, f =
1.0 MHz)
Coss
Max
Unit
5.0
pF
1.0
pF
2.0
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f
(VOS = 15 Vdc, 10 = 1.0 mAde,
RG ~ 1.0 k ohm, f = 100 MHz)
(VOS = 15 Vdc, 10 = 1.0 mAde,
RG ~ 1.0 k ohm, f = 200 MHz)
(VOS = 15 Vdc, 10 = 4.0 mAde,
RG ~ 1.0 k ohm, f = 100 MHz)
(VOS = 15 Vdc, 10 = 4.0 mAde,
RG ~ 1.0 k ohm, f = 400 MHz)
•
Common Source Power Gain
NOS = 15 Vdc, 10 = 1.0 mAde,
(VOS = 15 Vde, 10 = 1.0 mAde,
(VOS = 15 Vde, 10 = 4.0 mAde,
NoS = 15 Vdc, 10 = 4.0 mAde,
NF
=
dB
Gps
f
f
f
f
=
100
= 200
= 100
= 400
MHz)
MHz)
MHz)
MHz)
2N5484
2N5484
2N5485, 2N5486
2N5485, 2N5486
dB
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-50
14
30
20
2N5555
CASE 29-04, STYLE 5
TO-92 (TO-226AAI
"~I ~~"~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
310
2.82
mW
mWf'C
Junction Temperature Range
TJ
-65 to +150
°c
Storage Temperature Range
Tsta
-65 to +150
°c
3
1 Drain
JFET
SWITCHING
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
V(BR)GSS
25
-
Vdc
-
1.0
nAdc
-
-
10
2.0
pAdc
15
-
mAdc
VGS(f)
-
1.0
Vdc
Drain-Source On-Voltage
(lD = 7.0 mAde, VGS = 0)
VDS(on)
-
1.5
Vdc
Static Drain-Source On Resistance
(lD = 0.1 mAdc, VGS = 0)
rDS(on)
-
150
Ohms
rds(on)
-
150
Ohms
Ciss
-
5.0
pF
Crss
-
1.2
pF
-
5.0
ns
5.0
ns
15
ns
10
ns
Characteristic
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 pAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS
=
0)
Drain Cutoff Current
(VDS = 12 Vdc, VGS
(VDS = 12 Vdc, VGS
=
=
-10 V)
-10 V, TA
IGSS
nAdc
ID(off)
=
100°C)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current"
(VDS = 15 Vdc, VGS = 0)
IDSS
Gate-Source Forward Voltage
(lG(f) = 1.0 mAdc, VDS = 0)
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Drain-Source "ON" Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS
= 0, f =
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f
=
1.0 MHz)
1.0 MHz)
SWITCHING CHARACTERISTICS
=
Turn-On Delay Time
(VDD
Rise Time
VGS(on) = 0, VGS(off)
(See Figure 1)
=
10 Vdc, ID(on)
Turn-Off Delay Time
(VOO
Fall Time
VGS(on) = 0, VGS(off)
(See Figure 1)
'Pulse Test: Pulse Width
< 300 I's,
10 Vdc, 10(on)
Duty Cycle
= 7.0 mAdc,
= -10 Vdc)
td(on)
= 7.0 mAde,
= -10 Vdc)
td(off)
-
tf
-
tr
< 3.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-51
•
2N5555
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
f--I 90%
VOO
50 Ohm
Coaxi"
10.
10.
PULSE
GENERATOR
50 Ohm Couial Cable
{SO Ohms)
~
O~
Uk
1"
"'""
"*"
Ga1
T
50%
TEKTRONIX
56'
SAMPLING
INPUT
I
I
I
Rm=5DOhms
I
~
-I
OUTPUT
INPUT PULSE
I
I I 1
I I
1I
Input Pulse
Rise Time
'''''
VGS(offl
I
Input Pulse
Fall Time
I
td(an)
1I
-I
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-52
I
I
I
1-
I
K.O%
trl_
RistTlme<10ns
flU rUM <1 Dns
Nomioal ValUI of "on" Pulse Width = 400 ns
OutyCvcleS.l.0%
Generator Soule. Impedance'" 50 Ohms
I
-I
VGS(on)
'0%
I
I I
'0%
1- - - -
90.
I
I
-,
hSCOPE
PulseWldth---1
,I ,
--It.totfll-
W
90% I
I
_:1,:_
2N5638
2N5639
2N5640
CASE 29-04, STYLE 5
TO-92 (TO-226AAI
2 Source
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
VGSR
30
Vdc
IGF
10
mAde
PD
310
2.82
mWrC
Rating
Reverse Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
JFET
SWITCHING
mW
Junction Temperature Range
TJ
-65to +150
°c
Storage Temperature Range
TSlQ
-65to +150
°c
N-CHANNEL -
DEPLETION
Reier to 2N5653 lor graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
30
-
-
1.0
1.0
nAdc
pAdc
-
1.0
1.0
1.0
1.0
1.0
1.0
nAdc
50
25
5.0
-
-
-
0.5
0.5
0.5
-
30
60
100
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 pAdc, VDS = 0)
Gate Reverse Current
(VGS = -15 Vdc, VDS = 0)
(VGS = -15 Vdc, VDS = 0, TA = 100°C)
Drain Cutoff Current
(VDS = 15 Vdc, VGS
(VDS = 15 Vdc, VGS
(VDS = 15 Vdc, VGS
(VDS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
IGSS
ID(off)
=
=
=
=
=
=
2N5638
2N5639
2N5640
2N5638
2N5639
2N5640
-12 Vdc)
-8.0 Vdc)
-6.0 Vdc)
-12 Vdc, TA = 100°C)
-8.0 Vdc, TA = 100°C)
-6.0 Vdc, TA = 100°C)
-
Vdc
pAdc
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(l)
(VOS = 20 Vdc, VGS = 0)
mAde
lOSS
2N5638
2N5639
2N5640
Orain-Source On-Voltage
(10 = 12 mAde, VGS = 0)
(10 = 6.0 mAde, VGS = 0)
(10 = 3.0 mAde, VGS = 0)
VOS(on)
2N5638
2N5639
2N5640
Static Drain-Source On Resistance
(ID = 1.0 mAde, VGS = 0)
rOS(on)
2N5638
2N5639
2N5640
Vdc
Ohms
-
SMALL-SIGNAL CHARACTERISTICS
Static Orain-Source "ON" Resistance
(VGS = 0,10 = 0, 1= 1.0 kHz)
rds(on)
Ohms
Input Capacitance
(VOS = 0, VGS = -12 Vdc, f = 1.0 MHz)
Ciss
-
Reverse Transfer Capacitance
(VOS = 0, VGS = -12 Vdc, f = 1.0 MHz)
erss
-
2N5638
2N5639
2N5640
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-53
30
60
100
10
pF
4.0
pF
•
2N5638,2N5639,2N5640
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
4.0
6.0
8.0
ns
5.0
8.0
10
ns
5.0
10
15
ns
10
20
30
ns
SWITCHING CHARACTERISTICS
Turn-On Delay
Time
Rise Time
10(on)
6.0 mAde
3.0 mAde
VOO
=
10 Vde,
VGS(on)
Turn·Off Oelay
Time
VGS(off)
RG'
Fall Time
= 12 mAde
10(on)
= 0,
= -10 Vde,
= 12 mAde
6.0 mAde
3.0 mAde
10(on)
= 12 mAde
6.0 mAde
3.0 mAde
= 50 ohms
10(on)
= 12 mAde
6.0 mAde
3.0 mAde
2N5638
2N5639
2N5640
td(on)
2N5638
2N5639
2N5640
tr
2N5638
2N5639
2N5640
td(off)
2N5638
2N5639
2N5640
tf
(1) Pulse Test: Pulse Width .. 300 /LS, Outy Cycle .. 3.0%.
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-54
-
2N5668
2N5669
2N5670
CASE 29-04. STYLE 5
TO-92 (TO-226AA)
2 Source
,~~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VDS
25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
Reverse Gate-Source Voltage
VGSR
25
Vdc
Rating
Drain Current
Forward Gate Current
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Storage Channel Temperature Range
ID
20
mAde
IG(I)
10
mAde
PD
310
2.82
mW
mWrC
Tstg
ELECTRICAL CHARACTERISTICS (TA
, Drain
-65 to
+ 150
JFET
VHF AMPLIFIER
N-CHANNEL - DEPLETION
°C
~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
25
-
Typ
Max
Unit
-
-
Vdc
-
2.0
2.0
0.2
1.0
2.0
-
4.0
6.0
8.0
1.0
4.0
8.0
-
5.0
10
20
1500
2000
3000
-
-
6500
6500
7500
-
125
800
-
-
-
-
20
50
75
10
25
35
50
100
150
-
-
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ 10 JJAdc, VDS ~ 0)
Gate Reverse Current
(VGS ~ -15 Vdc, VDS ~ 0)
(VGS ~ -15 Vdc, VDS ~ 0, TA ~ 100°C)
Gate Source Cutoff Voltage
(VDS ~ 15 Vdc, ID ~ 10 nAdc)
IGSS
-
Vdc
VGS(off)
2N5668
2N5669
2N5670
nAdc
JJAdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(l)
(VDS ~ 15 Vdc, VGS ~ 0)
IDSS
2N5668
2N5669
2N5670
-
mAde
SMALL-8IGNAL CHARACTERISTICS
Forward Transler Admittance
(VDS ~ 15 Vdc, VGS ~ 0, I ~ 1.0 kHz)
Input Admittance
(VDS ~ 15 Vdc, VGS
~
0, I
~
100 MHz)
Output Admittance
(VDS ~ 15 Vdc, VGS
~
0, I
~
1.0 kHz)
Re(Yis)
IYosl
Output Conductance
(VDS ~ 15 Vdc, VGS ~ 0, I ~ 100 MHz)
Forward Transconductance
(VDS ~ 15 Vdc, VGS ~ 0, I ~ 100 MHz)
I'mhos
IYlsl
2N5668
2N5669
2N5670
2N5668
2N5669
2N5670
-
Re(yos)
2N5668
2N5669
2N5670
-
-
1000
1600
2500
I'mhos
I'mhos
Re(y/s)
2N5668
2N5669
2N5670
I'mhos
-
I'mhos
-
Input Capacitance
(VDS ~ 15 Vdc, VGS ~ 0, I ~ 1.0 MHz)
Ciss
-
4.7
7.0
pF
Reverse Transler Capacitance
(VDS ~ 15 Vdc, VGS ~ 0, I ~ 1.0 MHz)
Crss
-
1.0
3.0
pF
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-55
•
2N5668,2N5669,2N5670
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Coss
-
1.4
4.0
pF
Noise Figure (Figure 1)
(VDS = 15 Vdc, VGS = 0, 1= 100 MHz at RG' = 1.0 k ohm)
NF
-
-
2.5
dB
Common Source Power Gain (Figure 1)
(VDS"= 15Vdc, VGS = 0,1 = 100 MHz)
Gps
16
-
-
dB
Characteristic
Output Capacitance
(VDS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
(1) Pulse Test: Pulse Width = 100 ms, Duty Cycle'" 10%.
FIGURE 1 - 100 MHz, POWER GAIN AND NOISE FIGURE TEST CIRCUIT
l3
12
Rl =SOOhms
C2
LO-l0pF
Rs=500hms
.~'"
000lj.!F
RFCl'loke
11
O,01j.1F
L3"" 17 Turns of #28 AWG Enameled
Copper Wire, Close Wound on 9f32"
1I "" 8.5 Turns of 114 AWG Tinned Copper, Ola "" 3/8", "" 0.9" long
Tapped at ... 2-112 Turns (adjust to glVll RG ,. 1 OkohmL
Parallel Aesistance =40kohms;tunBSat""a.OpF
l2"" 13.5 Turll$I16AWG Tinned Copper, 011.... 318", "" 12" Long.
Tappedat""S Turns; ParaUti Resistance = 40 k ohms,
tunesat",,4.0pF
Ceramic Form, Tuning Provided bV8
Powdered Iron Slug.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-56
MAXIMUM RATINGS
2N6659 2N6660 2N6661
Symbol MPF6659 MPF6660 MPF6661
Rating
Orain-Source Voltage
VOS
35
60
90
Vdc
Orain-Gate Voltage
VOG
35
60
90
Vdc
Gate-Source Voltage
VGS
Drain CurrentContinuous (11
Pulsed (21
± 30
2N6659
2N6660
2N6661
MPF6659
MPF6660
MPF6661
Unit
Vdc
Adc
2.0
3.0
10
10M
2N6659
2N6660
2N6661
Total Oevice Oissipation
@ TC ~ 25°C
Oerate above 25°C
Po
Total Oevice Oissipation
@TA ~ 25°C
Oerate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
MPF6659
MPF6660
MPF6661
6.25
50
2.5
20
-
1.0
8.0
-55to +150
2N6659,60,61
CASE 79-02, STYLE 6
TO-39 (TO-205AD)
Watts
mWI"C
MPF6659,60,61
CASE 29-03, STYLE 22
TO-226AE
Watts
mWI"C
I
" ,
°c
TMOS
SWITCHING TRANSISTOR
(11 The Power Olsslpatlon of the package may result in a lower continuous drain
current.
(21 Pulse Width", 300 p.s, Outy Cycle'" 2.0%.
ELECTRICAL CHARACTERISTICS
If!
N-CHANNEL -
ENHANCEMENT
(TA ~ 25°C unless otherwise noted.1
Symbol
Min
Zero-Gate-Voltage Orain Current
(VOS ~ Maximum Rating, VGS ~ 01
lOSS
-
Gate-Body Leakage Current
(VGS = 15 V, VOS = 0)
IGSS
Characteristic
Typ
Max
Unit
-
10
p.Adc
-
-
100
nAdc
35
60
90
-
-
-
-
-
0.8
1.4
2.0
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0, 10 ~ 10 p.A1
Vdc
V(BRIOSX
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
-
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VOS = VGS, 10 ~ 1.0 mAl
VGS(Thl
Orain-Source On-Voltage
(VGS = 10 V, 10 = 1.0 A)
(VGS
= 5.0 V,
VOS(onl
10 ~ 0.3 A)
Static Drain-Source On Resistance
(VGS ~ 10 Vdc, 10 ~ 1.0 Adcl
Vdc
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
-
-
-
-
1.8
3.0
4.0
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
-
0.8
0.9
0.9
1.5
1.5
1.6
-
-
rOS(onl
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
Vdc
Ohms
-
-
1.8
3.0
4.0
1.0
2.0
-
Ciss
-
30
50
pF
Reverse Transfer Capacitance
(VOS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
-
3.6
10
pF
Output Capacitance
(VOS = 25 V, VGS
Coss
-
20
40
pF
9fs
170
-
-
mmhos
On-State Orain Current
(VOS = 25 V, VGS = 10 V)
10(on)
Amps
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(V OS = 25 V, VGS
= 0, f =
= 0, f =
1.0 MHzl
1.0 MHzl
Forward Transconductance
(VOS = 25 V, 10 ~ 0.5 A)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-57
•
2N6659, 2N6660, 2N6661, MPF6659, MPF6660, MPF6661
ELECTRICAL CHARACTERISTICS ITA
= 25'C unless otherwise noted.)
Min
Symbol
Characteristic
Max
Unit
-
5.0
ns
-
5.0
ns
5.0
ns
5.0
ns
Typ
SWITCHING CHARACTERISTICS(1)
Rise Time
tr
Fall Time
tf
-
Turn-On Time
ton
Turn-Off TIme
toft
-
(1) Pulse Test: Pulse Width"" 300 p.s, Duty Cycle"" 2.0%.
RESISTIVE SWITCHING
FIGURE 1 -
FIGURE 2 -
SWITCHING TEST CIRCUIT
+
SWITCHING WAVEFORMS
25 V
..1'3
n
To Sampling Scope
"" r-TodB-l-_.ff'::"::'=-=l~50 n Input
Pulse Generator
Pi,. M"'1 ":'
Vout
Vin
i~~ltn:~
l..-l-J
-=-
-=
-=-
Output Vout
Inverted
-=
Input
FIGURE 4 -
VGS(th) NORMALIZED versus TEMPERATURE
FIGURE 3 -
2.0
w
'"~
<> 1.2
5:J::
ll!j'!:
--
-
0.8
E
~ 0.4
VOS = VGS
10 = 1.0 rnA
- --- --
o
-50
FIGURE 5 -
:::>
u
~
0.8
g§
./
./
1.2
~ 0.8
IJ
c
.oil ~
rJ
fl
§
'/
FIGURE 6 -
6.0V
~
w
u 60
z
~
~
1'1
4.0 V
4.0
40
= OV
1\
,\
1\
40
20
4.0 V
10
20
30
VOS, ORAIN-TO·SOURCE VOLTAGE (VOLTS)
VGS
u
5.0 V
'/.
-
5.0 V
CAPACITANCE versus DRAIN-TO-SOURCE VOLTAGE
80
7.0V
6.0 V
100
10 V
8.0 V
7.~
1.0
2.0
3.0
VOS, ORAIN-TO·SOURCE VOLTAGE (VOLTS)
9.0V
....-
~
~
~ :;..--- I - ~~
<>
:§ 0.4
=
:.22.!
~~~
z
i--.
-- --
~~
:::>
u
OUTPUT CHARACTERISTICS
1/
<>
90.4
~
!z
1.6
1501'CI
VGS
~ 1.6
~ 1.2
a:
ie
f--
50
100
TJ, JUNCTION TEMPERATURE
2.0
~
I
VGS
~
o
'">-z
ON-REGION CHARACTERISTICS
2.0
1.6
~
Vin
I\,
~
Coss
K
Cros
10
20
30
40
50
VOS, DRAlN·TO·SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-58
-,
Ciss-
....... r-
60
2N6659, 2N6660, 2N6661, MPF6659, MPF6660, MPF6661
FIGURE 7 - ON-VOLTAGE versus TEMPERATURE
10
~
~
5.0
w
~
!::;
g
~
1.0
JIL -
-- --
f=V 5
10V
~
...-
-
1.SA
1.0 A
.............
0.5 A
~
~ roo-
:::>
~Z~
0.5
0.4
~ 0.3
_ 0.2
j
0.1
-SO -30 -10
10
30
SO
70
90
TJ. JUNCTION TEMPERATURE lOCI
110
130
lSO
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-59
2N6782
MAXIMUM RATINGS
Rating
Orain-Source Voltage
Orain-Gate Voltage (RGS
=
1.0 mfl)
Symbol
Value
Unit
VOSS
100
Vdc
VOGR
100
Vdc
VGS
±20
Vdc
Gate-Source Voltage
Orain Current
CASE 79-03, STYLE 6
TO-39 (TO-20SAF)
3 Drain
Adc
Continuous
10
10M
3.5
14
Po
15
0.12
Watts
W/"C
TJ, Tstg
-55 to 150
°c
Thermal Resistance Junction to Case
R8JC
8.33
°C/W
Thermal Resistance Junction to Ambient
R8JA
175
°C/W
TL
300
°C
Pulsed
=
Total Power Oissipation @ TC
Derate above 25°C
25°C
Operating and Storage
Temperature Range
'"
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
ELECTRICAL CHARACTERISTICS (TC
•
;~
,
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
V(BR)OSS
100
-
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage (VGS
=
0, 10
=
0.25 mAl
Zero Gate Voltage Orain Current
(VOS = 100 V, VGS = 0 V)
(VOS = 80 V, VGS = 0 V, TJ = 125°C)
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
lOSS
= 20 Vdc, VOS = 0)
= -20 Vdc, VOS = 0)
IGSSF
IGSSR
-
Vdc
pAdc
250
1000
100
nAdc
-100
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS
= VGS, 10 =
0.5 mAl
Static Orain-Source On-Resistance
(VGS = 10 Vdc, 10 = 2.25 Adc)
Orain-Source On-Voltage (VGS
=
Forward Transconductance (VOS
TA
TA
=
=
25°C
125°C
10 V, 10 = 3.5 Adc)
=
VGS(th)
2.0
4.0
Vdc
rOS(on)
-
0.6
1.08
Ohm
2.1
Vdc
9fs
1.0
3.0
mhos
pF
VOS(on)
5.0 V, 10 = 2.25 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS =
f = 1.0 MHz)
0,
Reverse Transfer Capacitance
Ciss
60
200
Coss
40
100
erss
10
25
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Rise Time
(VOO = 34 V, 10 = 2.25 Rated 10,
Rgen = 50 ohms)
Turn-Off Oelay Time
Fall Time
td(onl
-
15
tr
25
td(off)
-
tf
-
20
ns
25
SOURCE-DRAIN DIODE CHARACTERISTICS'
Oiode Forward Voltage
Forward Turn-On Time
(IS
VSO
=
Rated 10(on),
VGS = 0)
Reverse Recovery Time
ton
trr
'Pulse Test: Pulse Width", 300 p.s, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-60
0.75
-
1.5
Vdc
Negligible
ns
200
ns
2N6784
MAXIMUM RATINGS
Rating
Symbol
Orain-Source Voltage
Orain-Gate Voltage (RGS
=
1.0 mfl)
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Value
Unit
VOSS
200
Vdc
VOGR
200
Vdc
VGS
±20
iii
Vdc
2.25
9.0
Po
15
0.12
Watts
Wf'C
TJ, Tstg
-55 to 150
°c
Thermal Resistance Junction to Case
ReJC
8.33
°CIW
Thermal Resistance Junction to Ambient
ReJA
175
°CIW
TL
300
°C
=
25°C
Operating and Storage
Temperature Range
3 Drain
,~i ~~
Adc
10
10M
Total Power Oissipation @ TC
Oerate above 25°C
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for lOs
ELECTRICAL CHARACTERISTICS (TC
=
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
200
Max
Unit
OFF CHARACTERIST1CS
Orain-Source Breakdown Voltage (VGS = 0, 10 = 0.25 mAl
Zero Gate Voltage Orain Current
(VOS = Rated VOSS, VGS = 0)
(VOS = 0.8 Rated VOSS, VGS = 0, TJ = 125°C)
lOSS
Gate-Body Leakage Current, Forward (VGS = 20 Vdc, VOS = 0)
Gate-Body Leakage Current. Reverse (VGS = -20 Vde, VOS = 0)
-
Vde
pAde
-
250
1000
IGSSF
-
100
nAde
IGSSR
-
-100
nAde
ON CHARACTERISTICS'
Gate Threshold Voltage (V OS = VGS, 10 = 0.5 mAl
Static Orain-Souree On-Resistance
(VGS = 10 Vde, 10 = 1.5 Ade)
TA = 25°C
TA = 125°C
Orain-Source On-Voltage (VGS = 10 V, 10 = 2.25 Adc)
Forward Transconductance (VOS = 5.0 V, 10 = 1.5 Adc)
VGS(th)
2.0
4.0
Vde
rOS(on)
-
1.5
2.81
Ohm
VOS(on)
-
3.37
Vde
9ls
0.9
2.7
mhos
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS = 25 V, VGS = 0,
1= 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
60
200
Coss
20
80
Crss
5.0
25
tr
-
20
td(off)
-
30
tf
-
20
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
td(on)
Rise Time
(VOO = 75 V,IO = 1.5 A.
Rgen = 50 ohms)
Turn-Off Oelay Time
Fall Time
15
ns
SOURCE-DRAIN DIODE CHARACTERISTICS'
Oiode Forward Voltage
Forward Turn-On Time
(Is
= Rated 10(on),
VGS = 0)
Reverse Recovery Time
VSO
0.7
ton
-
trr
'Pulse Test: Pulse Width", 300l'oS, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-61
290 (Typ)
1.5
Vde
Negligible
ns
-
ns
•
2N6788
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOSS
100
Vdc
Drain-Gate Voltage (RGS = 1.0 mll)
VOGR
100
\,Ide
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous
Pulsed
10
10M
6.0
24
Po
20
0.16
Watts
W/"C
TJ, Tstg
-55 to 150
°c
Thermal Resistance Junction to Case
ROJC
6.25
°CIW
Thermal Resistance Junction to Ambient
RIiJA
175
°CIW
TL
300
°C
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
•
Characteristic
Symbol
Min
V(BR)OSS
100
-
-
1.0
4.0
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
= 0, 10 = 0.25 mAl
Zero Gate Voltage Drain Current
(VOS = Rated VOSS, VGS = 0)
(VOS = 80 V, VGS = 0, TJ = 125°C)
lOSS
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
= 20 Vdc, VOS = 0)
= - 20 Vdc, VOS = 0)
Vdc
mA
IGSSF
-
100
nAdc
IGSSR
-
-100
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS
=
VGS, 10
=
1.0 mAl
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 3.5 Adc)
Drain-Source On-Voltage (VGS
=
Forward Transconductance (VOS
TA
TA
= 25°C
= 125°C
10 V, 10 = 6.0 Adc)
= 5.0 V, 10 = 3.5 Adc)
VGS(th)
2.0
4.0
\Ide
rOS(on)
-
0.3
0.54
Ohm
-
1.8
Vdc
9fs
1.5
4.5
mhos
pF
VOS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
f
= 25 V, VGS = 0,
= 1.0 MHz)
Reverse Transfer Capacitance
Ciss
200
600
Coss
100
400
Crss
20
100
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
td(on)
Rise Time
(VOO = 35 V, 10 = 3.5 A,
Rgen = 50 ohms)
Turn-Off Delay Time
Fall TIme
tr
td(off)
tf
-
40
ns
70
40
70
SOURCE-DRAIN DIODE CHARACTERISTICS'
Diode Forward Voltage
Forward Turn-On Time
(IS = Rated 10(on),
VGS = 0)
Reverse Recovery Time
VSO
0.8
ton
-
trr
'Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-62
1.8
Vdc
Negligible
ns
230
ns
2N6790
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS
=
1.0 m!1)
Symbol
Value
Unit
VOSS
200
Vdc
VOGR
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous
Pulsed
10
10M
3.5
14
Po
20
0.16
Watts
TJ, Tstg
-55to 150
°c
Thermal Resistance Junction to Case
ROJC
6.25
°CIW
Thermal Resistance Junction to Ambient
ROJA
175
°CIW
TL
300
°C
Adc
=
Total Power Dissipation @ TC
25°C
Derate above 25°C
Operating and Storage
Temperature Range
wrc
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
ii1~
,ii ~
, Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
=
ELECTRICAL CHARACTERISTICS (TC
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
200
Max
•
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
=
Zero Gate Voltage Drain Current
(VOS = Rated VOSS, VGS = 0)
(VOS = 0.8 Rated VOSS, VGS = 0, TJ
0, 10
=
0.25 rnA)
loSS
=
125°C)
= 20 Vdc, VOS = 0)
= - 20 Vdc, VOS = 0)
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
-
Vdc
/LAde
-
250
1000
100
nAdc
IGSSR
-
-100
nAdc
VGS(th)
2.0
4.0
Vdc
rOS(on)
-
0.8
1.5
Ohm
IGSSF
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS
=
VGS, 10
=
1.0 rnA)
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 2.25 Adc)
Drain-Source On-Voltage (VGS
=
Forward Transconductance (VOS
TA
TA
10 V, 10
=
=
5.0 V, 10
= 25°C
= 125°C
3.5 Adc)
=
-
2.8
Vdc
9fs
1.5
4.5
mhos
pF
VOS(on)
2.25 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
f
= 25 V, VGS =
= 1.0 MHz)
0,
Reverse Transfer Capacitance
Cjss
200
600
Coss
60
300
Crss
15
80
-
40
td(off)
-
50
tf
-
50
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
td(on)
Rise Time
(VOO = 74 V, 10 = 2.25 A,
Rgen = 50 ohms)
Turn-Off Delay Time
Fall Time
tr
ns
50
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward Diode Voltage
Forward Turn-On Time
VSO
(Is = Rated 10(on),
VGS = 0)
Reverse Recovery Time
ton
trr
'Pulse Test: Pulse Width", 300 I'os, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-63
0.7
-
1.5
Vdc
Negligible
ns
350
ns
Il;
2N6796
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOSS
100
Vdc
Drain-Gate Voltage (RGS = 1.0 mil)
VOGR
100
Vdc
VGS
±20
Vdc
Gate-Source Voltage
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
!/!
"'~ ~
3 Drain
Adc
Drain Current
Continuous
Pulsed
10
10M
8.0
32
Po
25
0.2
Watts
TJ, Tstg
-55 to 150
°c
Thermal Resistance Junction to Case
RruC
5.0
°CIW
Thermal Resistance Junction to Ambient
RruA
175
°CIW
TL
300
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
wrc
1 Source
THERMAL CHARACTERISTICS
Maximum lead Temperature
1.6 mm from Case for 10 s
ELECTRICAL CHARACTERISTICS (TC
•
= 25°C unless otherwise
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
noted.)
Characteristic
Symbol
Min
V(BR)OSS
100
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
= 0, 10 = 0.25 mAl
Zero Gate Voltage Drain Current
(VDS = Rated VOSS, VGS = 0)
(VOS = 80 V, VGS = 0, TJ = 125°C)
lOSS
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
= 20 Vdc, VOS = 0)
= - 20 Vdc, VOS = 0)
-
Vdc
!LAde
-
250
1000
-
100
nAdc
IGSSR
-100
nAdc
VGS(th)
2.0
4.0
Vdc
rOS(on)
0.18
0.35
Ohm
VOS(on)
-
1.56
Vdc
9fs
3.0
9.0
mhos
pF
IGSSF
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS
= VGS,
10
= 0.5 mAl
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 5.0 Adc)
Orain-Source On-Voltage (VGS
=
Forward Transconductance (VOS
TA
10 V, 10
=
15 V,
=
125°C
= 8.0 Adc)
10 = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
=
25 V, VGS
f = 1.0 MHz)
= 0,
Reverse Transfer Capacitance
Ciss
350
900
Coss
150
500
Crss
50
150
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Rise Time
(VOO = 30 V, 10 = 5.0 Adc,
Rgen = 50 ohms)
Turn-Off Oelay Time
Fall Time
td(on)
-
30
tr
-
75
ns
tf
-
VSO
0.75
1.5
Vdc
ton
-
Negligible
ns
300
ns
td(off)
40
45
SOURCE-DRAIN DIODE CHARACTERISTICS'
Diode Forward Voltage
Forward Turn-On Time
Reverse Recovery Time
(IS = Rated 10(on),
VGS = 0)
trr
'Pulse Test: Pulse Width", 300 p.s, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-64
2N6798
CASE 79-03. STYLE 6
TO-39 (TO-205AF)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
200
Vdc
Drain-Gate Voltage (RGS = 1.0 mO)
VDGR
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous
Pulsed
ID
IDM
5.5
22
PD
25
0.2
Watts
Wf'C
TJ, Tstg
-55 to 150
"C
iii
Adc
Total Power Dissipation @ TC = 25"C
Derate above 25"C
Operating and Storage
Temperature Range
3 Drain
,~ase
3//[ Gat.
2
1
1 Source
TMOSFET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
N-CHANNEL -
Maximum Lead Temperature
1.6 mm from Case for 10 s
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)DSS
200
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
= 0, ID = 0.25 mAl
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = 0.8 Rated VDSS, VGS = 0, TJ
IDSS
=
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
Vdc
p.Adc
-
-
250
1000
IGSSF
-
100
nAdc
IGSSR
-
-100
nAdc
VGS(th)
2.0
rDS(on)
-
125°C)
= 20 Vdc, VDS = 0)
= -20 Vdc, VDS = 0)
-
ON CHARACTERISTICS'
Gate Threshold Voltage (VDS
= VGS,
ID
= 0.5 mAl
Static Drain-Source On-Resistance
(VGS = 10 Vdc, ID = 3.5 Adc)
Drain-Source On-Voltage (VGS
=
Forward Transconductance (VDS
TA
TA
= 25"C
= 125"C
= 5.5 Adc)
= 5.0 V, ID = 3.5 Adc)
10 V, ID
-
4.0
Vdc
0.4
0.75
Ohm
2.2
Vdc
9fs
2.5
7.5
mhos
pF
VDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS
Output Capacitance
= 25 V, VGS = 0,
f = 1.0 MHz)
Reverse Transfer Capacitance
Ciss
350
900
Coss
100
450
Crss
40
150
30
td(off)
-
tf
-
VSD
0.7
ton
-
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
td(on)
Rise Time
(VDD = 77 V, ID = 3.5 A,
Rgen = 50 ohms)
Turn-Off Delay Time
Fall Time
tr
ns
50
50
40
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward Turn-On Time
Reverse Recovery Time
(IS = Rated ID(on),
VGS = 0)
trr
'Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-65
450 (Typ)
1.4
Vdc
Negligible
ns
-
ns
•
2N6800
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOSS
400
Vdc
Drain-Gate Voltage (RGS = 1_0 mn)
VOGR
400
Vdc
VGS
±20
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC
Derate above 25°C
Vdc
Adc
=
25°C
Operating and Storage
Temperature Range
10
10M
3.0
Po
25
20
Watts
WfC
TJ, Tstg
-55 to 150
°C
14
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
N-CHANNEL -
Maximum Lead Temperature
1.6 mm from Case for 10 s
ELECTRICAL CHARACTERISTICS (TC
•
ENHANCEMENT
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
400
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (vGS = 0, 10 = 0.25 rnA)
Zero Gate Voltage Drain Current
(VOS = Rated VOSS, VGS = 0)
(VOS = 0.8 Rated VOSS, VGS = 0, TJ = 125°C)
Gate-Body Leakage Current, Forward (VGS
=
lOSS
20 Vdc, VOS = 0)
IGSSF
Gate-Body Leakage Current, Reverse (VGS = - 20 Vdc, VOS = 0)
IGSSR
-
Vdc
J.'Adc
-
-
250
1000
-
100
nAdc
-100
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS = VGS, 10 = 0.5 rnA)
VGS(th)
2.0
4.0
Vdc
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 2.0 Adc)
rOS(on)
-
1.0
2.4
Ohm
3.0
Vdc
9fs
2.0
6.0
mhos
pF
Drain-Source On-Voltage (VGS
=
TA = 125°C
10 V, 10
=
3.0 Adc)
VOS(on)
Forward Transconductance (VOS = 5.0 V, 10 = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS = 25 V, VGS
f = 1.0 MHz)
Output Capacitance
=
0,
Reverse Transfer Capacitance
Ciss
350
900
Coss
50
300
Crss
20
80
-
30
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
td(on)
RiseTime
(VOO = 176 V, 10 = 2.0 A,
Rgen = 50 ohms)
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
ns
35
55
35
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward Turn-On Time
(IS
Reverse Recovery Time
=
Rated 10(on),
VGS = 0)
VSO
0.7
ton
-
trr
'Pulse Test: Pulse Width", 300 J.'s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-66
1.4
Vdc
Negligible
ns
600
ns
2N6802
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOSS
500
Vdc
Drain-Gate Voltage (RGS = 1.0 m(1)
VOGR
500
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous
Pulsed
10
IDM
3.5
II
PD
25
0.2
Watts
-55 to 150
°c
Rating
3 Drain
ffi~
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
TJ, Tst9
3~/[ ~~
WfC
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
N-CHANNEL -
Maximum Lead Temperature
1.6 mm from Case for 10 s
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
= 0,
V(BR)DSS
500
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
Zero-Gate Voltage Drain Current
(VDS = Rated VOSS, VGS = 0)
(VDS = O.S Rated VDSS, VGS = 0, TJ
ID
= 0.25 mAl
IDSS
=
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
IGSSF
-
IGSSR
-
125°C)
=
=
= 0)
-20 Vdc, VDS = 0)
20 Vdc, VDS
-
Vdc
,..Adc
250
1000
100
nAdc
-100
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage (VDS
=
VGS, ID
= 0.5 mAl
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 1.5 Adc)
Drain-Source On-Voltage (VGS
=
Forward Transconductance (VDS
10 V, ID
= 5.0 V,
TA =
= 2.5 Adc)
ID = 1.5 Adc)
VGS(th)
2.0
4.0
Vdc
rDS(on)
-
1.5
3.5
Ohms
125°C
-
3.75
Vdc
9fs
1.5
4.5
mhos
pF
VDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS
Output Capacitance
f
= 25 V, VGS = 0,
= 1.0 MHz)
Reverse Transfer Capacitance
Ciss
350
900
Coss
25
200
Crss
15
60
tdlon)
-
30
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
(VDD = 225 V,ID = 1.5 V,
Rgen = 50 ohms)
Rise Time
Turn-Off Delay Time
Fall Time
1d(off)
-
tf
-
VSO
0.7
ton
-
trr
800
tr
ns
30
55
30
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward Turn-On Time
(IS = Rated ID,
VGS = 0)
Reverse Recovery Time
'Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-67
1.4
Vdc
Negligible
ns
-
ns
•
2N7000
MAXIMUM RATINGS
Rating
CASE 29-04, STYLE 7
TO-92 (TO-226AA)
Unit
Symbol
Value
Orain-Source Voltage
VOSS
60
Vdc
Orain-Gate Voltage
(RGS = 1 MCl)
VOGR
60
Vdc
Gate-Source Voltage
VGS
±40
Vdc
Drain Current
Continuous
Pulsed
10
10M
200
500
Po
400
3.2
mW
mWf'C
TJ, Tstg
-55 to +150
°c
R9JA
312.5
°CIW
TL
300
°C
3 Drain
,~
mAde
Total Power Oissipation @ TC = 25°C
Oerate above 25°C
Operating and Storage
Temperature Range
G~
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16" from case
for 10 seconds
•
ELECTRICAL CHARACTERISTICS (TC
N-CHANNEL -
ENHANCEMENT
= 25°C unless otherwise noted.)
Symbol
Min
Max
Unit
V(BR)OSS
60
-
Vdc
-
1.0
1.0
JLAdc
mA
IGSSF
-
-10
nAdc
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 mAl
VGS(th)
0.8
3.0
Vdc
Static Orain-Source On-Resistance
(VGS = 10 Vdc, 10 = 0.5 Adc)
(VGS = 10 Vdc, 10 = 0.5 V, TC = 125°C)
rOS(on)
-
5.0
9.0
Orain-Source On-Voltage
(VGS = 10 V, 10 = 0.5 Adc)
(VGS = 4.5 V, 10 = 75 mAl
VOS(on)
-
2.5
0.4
On-State Orain Current
(VGS = 4.5 V, VOS = 10 V)
Id(on)
75
-
mA
Forward Transconductance
(VOS = 10 V, 10 = 200 mAl
9ls
100
-
JLmhos
Ciss
-
60
pF
Coss
Crss
-
5.0
Characteristic
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 10 JLA)
Zero Gate Voltage Orain Current
(VOS = 48 V, VGS = 0)
(VOS = 48 V, VGS = 0, TJ = 125°C)
lOSS
Gate-Body Leakage Current, Forward
(VGSF = 15 Vdc, VOS = 0)
ON CHARACTERISTICS'
Ohm
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VOS = 25 V, VGS =
1= 1.0 MHz)
a
Reverse Transler Capacitance
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
Turn-Off Oelay Time
(VOD = 15 V, 10 = 600 mA
Rgen = 25 ohms, RL = 25 ohms)
(1) Pulse Test: Pulse Width", 300 JLs, Outy Cycle", 2.0%.
MOT~ROLA
SMALL-SIGNAL SEMICONDUCTORS
6-68
25
2N7008
MAXIMUM RATINGS
Rating
Symbol
Orain-Source Voltage
Orain-Gate Voltage
(RGS
~
1 MO)
Gate-Source Voltage
Drain Current
Continuous
Value
Unit
VOSS
60
Vdc
VOGR
60
Vdc
VGS
±40
Vdc
10
10M
150
1000
Po
400
3.2
mW
mWrC
TJ, Tstg
-55 to +150
"C
ROJA
312.5
"eMi
TL
300
°C
CASE 29·04, STYLE 22
TO·92 (TO·226AA)
3 Drain
,~
mAdc
Pulsed
Total Power Oissipation @ TA
Oerate above 25"C
~
25"C
Operating and Storage
Temperature Range
G~
1 Source
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1116" from case
for 10 seconds
TMOS FET
TRANSISTOR
N-CHANNEL -
ELECTRICAL CHARACTERISTICS (TC
ENHANCEMENT
~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
60
-
-
1.0
500
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 100 /LA)
Zero Gate Voltage Orain Current
(VOS ~ 50 V, VGS ~ 0)
(VOS ~ 50 V, VGS ~ 0, TJ ~ 125°C)
lOSS
Gate-Body Leakage Current, Forward
(VGSF ~ 30 Vdc, VOS ~ 0)
IGSSF
Vdc
~dc
-100
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage
(VOS ~ VGS, 10 ~ 250 /LA)
Static Orain-Source On-Resistance
(VGS ~ 5.0 Vdc, 10 ~ 50 Adc)
(VGS ~ 10 Vdc, 10 ~ 500 mAdc, TC
VGS(th)
rOS(on)
~
125"C)
Orain-Source On-Voltage
(VGS ~ 5.0 V, 10 ~ 50 mAl
(VGS ~ 10 V, 10 ~ 500 mAl
VOS(on)
On-State Orain Current
(VGS ~ 10 V, VOS '" 2.0 VO(on))
Forward Transconductance
(VOS '" 2.0 VOS(on), 10 ~ 200 mAl
1.0
2.5
Vdc
Ohm
-
7.5
13.5
-
1.5
3.75
Vdc
10(on)
500
-
mA
9fs
80
-
/Lmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
~
(VOS
f
~
25 V, VGS
1.0 MHz)
~
0
Reverse Transfer Capacitance
Ciss
-
50
Coss
-
25
erss
-
5.0
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Turn-Off Oelay Time
(VOO ~ 30 V, 10 ~ 200 mA
Rgen ~ 25 ohms, RL ~ 150 ohms)
'Pulse Test: Pulse Width", 300 /LS, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-69
pF
•
2N7008
,.1
2
1
J
1.BI--TA= 25"C
ie
,.
~
1.6
VGS =10V
1.4
9V
./
1.2
/V
V': , /
I-
~
a:
1
~
0.6
a O.B
a
I
9 0.4
0.2
O.B
~ .,/"
a
6V
~
z
0.4
9 0.2
...A
A f7
4V
3V
I!:.
2
3
4
5
6
7
3
10
~
2.4
1. 2
~
2. 2
~1.1 5
•
is
VGS = 10V
21---10 = 200 mA
1.B
~
~~ 1.6
~~ 1.4
V
:; ~ 1.2
au
~
~
,
1
0.8
0.6 ' - 0.4
-60
-
V
1. 1
~
./
~o
""
4
5
6
10
7
Figure 2. Transfer Characteristics
Figure 1. Ohmic Region
ll;'
7
VGS, GATE SOURCE VOLTAGE (VOLTS)
VOS, DRAIN SOURCE VOLTAGE (VOLTS)
in
/125°C
I V
1/.#
~
7V
5V
~~
I
'/
~
;:: 0.6
/25OC/
IY
-55°Cj
ie
BV
#. ;;'........
1/
VOS = 10 V
./
1.05
""'"
f'..
~
~
VOS = VG~_
10 = 1 mA
t"-......
1
o 0.95
:>
i OO~:
./
.,/"
..........
.......
..........
....... .......
..........
i!' O.B
~O.7S
!i'
-20
+20
+60
+100
+140
T, TEMPERATURE. 1°C)
Figure 3. Temperature versus Static Drain-Source
On-Resistance
0.7
-60
-20
0
+20
+60
T, TEMPERATURE (OC)
+ 100
+140
Figure 4. Temperature versus Gate Threshold Voltage
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-70
3N128
CASE 20-03, STYLE 7
TO-72 (TO-206AF)
3 Source
Gat~4case
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Orain-Souree Voltage
VOS
+20
Vde
Orain-Gate Voltage
VOG
+20
Vdc
Vdc
Gate-Source Voltage
VGS
±10
Drain Current
10
50
mAde
Total Oevice Oissipation @ TA = 25°C
Oerate above 25°C
Po
330
2.2
mW
mWrC
-65 to + 175
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
=
&
2
Substrate
3
lOrain
MOSFET
AMPLIFIER
N-CHANNEL -
OEPLETION
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)OSS
-50
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage(lI
(lG = -10 pAde, VOS = 0)
Gate Reverse Current
(VGS = -8.0 Vde, VOS
(VGS = -8.0 Vde, VOS
IGSS
=
=
0)
0, TA
=
125°C)
Gate Source Cutoff Voltage
(VOS = 15 Vde, 10 = 50 pAde)
nAdc
-
0.05
5.0
VGS(off)
-0.5
-8.0
Vde
IYfsl
5000
12,000
p,mhos
Re(Yis)
-
800
p,mhos
Re(yos)
-
500
p,mhos
-
p,mhos
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(2)
(VOS = 15 Vde, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 Vde, 10 = 5.0 mAde, f
=
1.0 kHz)
Input Admittance
(VOS = 15 Vde, 10
=
5.0 mAde, f
=
200 MHz)
Output Conductance
(VOS = 15 Vde, 10
=
5.0 mAde, f
=
200 MHz)
Forward Transconductance
(VOS = 15 Vde, 10 = 5.0 mAde, f
=
200 MHz)
Input Capacitance
(VOS = 15 Vde, 10
5.0 mAde, f
=
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 15 Vde, 10 = 5.0 mAde, f
=
1.0 MHz)
=
Re(y!s)
5000
Ciss
-
7.0
pF
Crss
0.05
0.35
pF
NF
-
5.0
dB
23
dB
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vde, 10
=
5.0 mAde, f
=
200 MHz)
Power Gain
(VOS = 15 Vde, 10
=
5.0 mAde, f
=
200 MHz)
PG
(I) Caution Oestructive Test, can damage gate oxide beyond operation.
(2) Pulse Test: Pulse Width = 300 p,s, Outy Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-71
13.5
•
3N128
TYPICAL CHARACTERISTICS
(TA
= 2SoC)
FIGURE 1 - DRAIN CHARACTERISTICS
FIGURE 2 - TRANSFER CHARACTERISTICS
0
20
I
VOS= 15 Vdc- -
~
/'"
I-
ffi
~
J
10
0
/
//
Z
~c
8
5""-
VG; =0
5
5.0
"-
-1.0 V
I" ~
0
'I
-2.0 V
oY
-3.0 V
o
10
15
VOS, ORAIN·SOURCE VOLTAGE (VOLTS)
5.0
0
'-.....
-4.0
-1.0
-2.0
-3.0
VGS, GATE·SOURCE VOLTAGE (VOLTS)
20
TYPICAL 1 kHz DRAIN CHARACTERISTICS
(TA = 2SoC, Vos = 15 Vdc, f = 1.0 kHz)
•
FIGURE 3 - FORWARD TRANSADMITTANCE
versus GATE BIAS VOL TAGE
FIGURE 4 - FORWARD TRANSADMITTANCE
versus DRAIN CURRENT
10
20
~
E
8.0
.5
5
0
r-.
0
~
6.0
~~
4.0
~
3.0
;;;
~
o
o
I-
~
~
~
-1.0
-
-1.0
~
2.0
/'
V
.--
V
-
-
/'
:r
~
-3.0
-4.0
0
4.0
3.0
10, DRAIN CURRENT (rnA)
1.0
1.0
VGS, GATE·SOURCE VOLTAGE (VOLTS)
8.0
6.0
10
TYPICAL 200 MHz COMMON-SOURCE ADMITTANCE CHARACTERISTICS
(T A = 2SoC, VOS = 15 Vdc, f = 200 MHz)
FIGURE 5 - INPUT ADMITTANCE (Yis) COMPONENTS
4.0
~
1
3. 0
-
...) ..
w
uw
z"
«Z
/
1-<
ul-
-
I--
-
FIGURE 6 - FORWARD TRANSADMITTANCE (Yfs) COMPONENTS
b"
.,/
V
B:i 2. 0
z1;l
-
/
0/
0",
u",
V
1-1-
=>'"
~~1
Qls-
/'
g
"-"-
....--
0
r--
9is
O~
1.0
4.0
6.0
B.O
bls
1.0
10
4.0
6.0
10, DRAIN CURRENT (mAl
10, DRAIN CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-72
B.O
10
3N128
FIGURE 7 - REVERSE TRANSADMITTANCE (y,,) COMPONENTS
+0.05
FIGURE 8 - OUTPUT ADMITTANCE (Yos) COMPONENTS
4
irs
0
'fi
1
.s
~~
0
'lj
5
5
tt
o. B
"''''
S~
e-e"''''
e-e"''''
~ "
O. 6
"'w
Qu
0.0.
5
O. 4
00
brs
~g
5---1.0
O.1 , /
B.O
10
1.0
=
4.0
6.0
B.O
10
FIGURE 10 - POWER GAIN AND NOISE FIGURE
versus DRAIN VOLTAG E
8.0
4
8.0
11'100M1HZ
- 1 0 "'5.0mA
I,. 'OiMH'
-VoS"'t5Vdc
PG
0
6.0
./
/
gos
10, DRAIN CURRENT (mA)
4
\
-
.--
I--
0
4.0
6.0
10, DRAIN CURRENT (mA)
FIGURE 9 - POWER CAIN AND NOISE FIGURE
versus DRAIN CURRENT
6
i.-"""
-
bos
/
NF
~
4.0
r-- r--
,
,
1.0
4.0
~
~
~
~
w
~
~
~
0
10
80
6.0
""..-
-z
.0
8. 0
6.0
0
z
z
0
6
,
"-
PG
z
0
V
r'f.-
.::;
4.0
NF
2.0
8. 0
~
~
~
0
6.0
10. DRAIN CURRENT (mAl
12
18
Vo, DRAIN VOLTAGE IVOLTSI
24
FIGURE 11 - THIRD ORDER INTERMODULATION DISTORTION
+40
+1
E
~
z
or-VD~ '15 Vide
-2o
1 I
~ -40
~
3RD ORDER
INTERCEPT POINTS
11 '100.5 MHz
Or- 11' 101 MHz
~
#' /
FUNDAMENTAL OUTPUT
-8 Or--- 10' 0.3 lOSS tiloSS
'"~ -8 0
~-100
~
15 -12 0
~i
l / //
~
Figure 11 shows the typical third order intermodulation distortion (IMO) performance of the 3N128 at 200 MHz.
/)
Both fundamental output and third order IMD output charac-
teristics are plotted. The curves have been extrapolated to show
II
~10-0.110SS
the third order intermodulation output intercept point.
Performance for drain currents from I DSS to 0.1 lOSS. is given.
The power gain and noise figure test amplifier shown in Figure 12
was used to generate the I MD data.
~
/) 10' 0.3 lOSS" lOSS
3RO OROER IMO OUTPUT
o
I 10'r 10S~
-140
-160
-lBO -160
-140
II
(j
-110 -100
-80
-60
-40
INPUT POWER PER TONE (dBm)
-10
+10
FIGURE 12 - POWER GAIN, NOISE FIGURE AND INTERMODULATION DISTORTION TEST CIRCUIT
0.5·3.0pF
OUTPUT
RL =50 n
3N118
L2
1.0·9.0 pF
INPUT
Rg' 50 n
L1 .. 4·1/2 turns#20 AWG wire, 3/16" diameter,
approximately 1/2" long, tapped 1 turn from
ground end.
1000 pF
33 pF
3.0 k
-14 V
1000 pF
L2" 3·1/2 turns #20 AWG wire, 3/8" diameter,
approximately 1/2" long
*Leadless-type disc capatitor
£Neutralization fixed for a Transistor having a
Typical value of Crss (0.13 pF)
1000 pF
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
6-73
•
3N155
3N156
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
Rating
VOS
±35
Vdc
Orain-Gate Voltage
VOG
±50
Vdc
Gate-Source Voltage
VGS
±50
Vdc
Orain Current
10
30
mAde
Total Oevice Oissipation @ TA = 25°C
Oerate above 25°C
Po
300
2.0
mW
mWI"C
TJ
-65to +175
°C
Tsta
-65 to + 175
°C
Junction Temperature Range
Storage Channel Temperature Range
3
2 Source
MOSFET
SWITCHING
P-CHANNEL -
ENHANCEMENT
Refer to 3N157 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
-35
Typ
Max
-
-1.0
-1000
nAdc
+1000
+10
pAdc
Unit
Off CHARACTERISTICS
= -10 !lAde, VG = Vs = 0)
= -10 Vdc, VGS = 0)
= -10 Vdc, VGS = 0, TA =
Gate Reverse Current (VGS = +50 Vdc, VOS = 0)
(VGS = +25 Vdc, VOS = 0)
Resistance Orain Source (10 = 0, VGS = 0)
Resistance Gate Source Input (VGS = - 25 Vdc)
Gate Forward Leakage Current (VGS = -50 Vdc, VOS = 0)
(VGS = -25 Vdc, VOS = 0)
Orain-Source Breakdown Voltage
(10
V{fIRJPSX
Zero-Gate-Voltage Orain Current
(VOS
(VOS
lOSS
125°C)
IGSS
rOS(offl
1 x 10+ 10
RGS
-
IG(f)
-
VGS(Th)
-1.5
-3.0
-
1 x 10+ 16
-
-
Vdc
-
Ohms
-
Ohms
-1000
-10
pAdc
-3.2
-5.0
Vdc
ON CHARACTERISTICS
Gate Threshold Voltage
Orain-Source On-Voltage
(VOS
(10
=
-10 Vdc, 10
=
3N155
3N156
-10 !lAde)
= - 2.0 mAde, VGS = -10 Vdc)
(10 = 0 mAde, VGS = -10 Vdc)
= -15 Vdc, VGS = -10 Vdc)
Static Orain-Source On Resistance
On-State Orain Current
(VOS
VOS(on)
-
rOS(on)
-
-
10(on)
-5.0
-1.0
Vdc
600
Ohms
-
-
mAde
-
-
400
350
IYfsl
1000
-
4000
I'mhos
Ciss
-
-
5.0
pF
erss
-
-
1.3
pF
Cd(sub)
-
-
4.0
pF
-
-
45
!'S
-
65
ns
ts
-
-
60
ns
tf
-
-
100
ns
SMALL-SIGNAL CHARACTERISTICS
Orain-Source Resistance
(VGS = -10 Vdc, 10 = 0, f
(VGS = -15 Vdc, 10 = 0, f
=
=
rds(on)
1.0 kHz)
1.0 kHz)
Forward Transfer Admittance
(VOS = -15 Vdc, 10 = - 2.0 mAde, f
=
1.0 kHz)
Input Capacitance
(VOS = -15 Vdc, VGS
=
140 kHz)
=
-10 Vdc, f
Reverse Transfer Capacitance
(VOS = 0, VGS = 0, f = 140 kHz)
Orain-Substrate Capacitance
(VO(SUB) = -10 Vdc, f = 140 kHz)
Ohms
SWITCHING CHARACTERISTICS
Turn-On Oelay
Rise Time
Turn-Off Oelay
td
(VOO = -10 Vdc,IO(onl = -2.0 mAde,
VGS(on) = -10 Vdc, VGS(off) = 0)
Fall Time
tr
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-74
3N157
3N158
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
I ~ate
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage*
Rating
VOS
±35
Vdc
Drain-Gate Voltage"
VOG
±50
Vdc
Gate-Source Voltage"
VGS
±50
Vdc
10
30
mAde
Po
300
1.7
mW
mW/,C
TJ
-65to +175
'C
Tsto
-65 to + 175
'C
Drain Current*
Total Device Dissipation @TA
Derate above 25'C"
= 25'C
Junction Temperature Range"
Storage Channel Temperature Range"
3 2 1
4
2 Source
MOSFET
AMPLIFIER AND SWITCHING
P-CHANNEL -
ENHANCEMENT
"JEOEC Registered Limits
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
-35
-
Max
Unit
OFF CHARACTERISTICS
= -10 pAdc, VG = Vs = 0)
= -15 Vdc, VGS = 0)
= -35 Vdc, VGS = 0)
= +25 Vdc, VOS = 0)
= +50 Vdc, VOS = 0)
Drain-Source Breakdown Voltage
(10
V(BR)OSX
Zero-Gate-Voltage Drain Current
(VOS
(VOS
lOSS
Gate Reverse Current*
(VGS
(VGS
Input Resistance
=
(VGS
Gate Source Voltage"
(VOS = -15Vdc, 10
IGSS
-25 Vdc)
RGS
-
-
VGS
=
Gate Forward Current"
(VGS
(VGS
(VGS
(VGS
=
=
=
=
-25
-50
-25
-50
-1.5
-3.0
3N157
3N158
-0.5 mAde)
Vdc,
Vdc,
Vdc,
Vdc,
VOS
VOS
VOS
VOS
= 0)
= 0)
= 0, TA =
= 0, TA =
IG(I)
-
-
+ 55'C)
+55'C)
-
1 x 10+ 12
-
-
Vdc
-1.0
-10
nAdc
pAdc
+10
+10
pAdc
nAdc
-
Ohms
Vdc
-5.5
-7.0
-10
-1.0
-10
-1.0
pAdc
nAdc
nAdc
pAdc
ON CHARACTERISTICS
Gate Threshold Voltage"
(VOS = -15 Vdc, 10 = -10 pAdc)
On-State Drain Current"
(VOS = -15 Vdc, VGS
=
Vdc
VGS(Th)
3N157
3N158
-1.5
-3.0
10(on)
-5.0
IVfsl
1000
-10 Vdc)
-
-
-3.2
-5.0
-
mAde
4000
/Lmhos
60
/Lmhos
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance"
(VOS = -15 Vdc, 10 = -2.0 mAde, f
Output Admittance"
(VOS = -15 Vdc, 10
=
1.0 kHz)
= - 2.0 mAde, I =
1.0 kHz)
Input Capacitance"
(VOS = -15 Vdc, VGS
= 0, I =
Reverse Transler Capacitance"
(VOS = -15 Vdc, VGS = 0, I
=
IVosl
-
5.0
pF
Crss
-
-
1.3
pF
Cd (sub)
-
-
4.0
pF
Ciss
140 kHz)
140 kHz)
Drain-Substrate Capacitance
(VO(SUB) = -10 Vdc, I = 140 kHz)
Noise Voltage
(RS = 0, BW = 1.0 Hz,
VOS = -15 Vdc, 10 = -2.0 mAde, f
(RS = 0, BW = 1.0 Hz,
VOS = -15 Vdc, 10 = -2.0 mAde, f
-
-
NV/v'Hz
en
=
100 Hz)
-
300
-
=
1.0 kHz)
-
120
500
"JEOEC Registered Limits
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-75
•
3N157,3N158
FIGURE 1 - FORWARD TRANSCONDUCTANCE
FIGURE 2 - OUTPUT TRANSCONDUCTANCE
a 10,000
1
~
100
~
5,000 r---
~
.'"
;;;
c
.,zw
1000
I-
SOO
~
;:l
lil
~
~
VOS--15V
TA'25 0C
1-1.0 kHz
Minimum
Typical
l--
-
0
w
'-'
~
r~-
'"
!il
8
5
-
;;c
0.5
1.0
10, DRAIN CURRENT (rnA)
•
'8
1
VOS=-15V
t
5.0
TA- 250C
1= 1.0 kHz
III
/
1.0
0.1
10
5.0
'"
V
10
III
0.5
1.0
10, DRAIN CURRENT (rnA)
10
5.0
FIGURE 4 - BIAS CURVE
FIGURE 3 - FORWARD TRANSCONDUCTANCE
\/linus TEMPERATURE
0
0
'-'
~~2
o "
o ,...........
.~
z"
0
toN
0
:ffi
z:;
-
"-
,
,
r---::::-
....."
-
-
Designers Limits_
---Typical
~
~
-1 0
~~ -20
-10
~
~
B
~ ~t,.
r--:::
VOS-15V
f-1~'.0k1z
L
~ -1.0
52
-15
105
65
25
125
145
.
,
\,
\.
\.
~
~
-- ~
- Maxim~±-Typical
"......
~
~
----
~
i
~
~c
-8.0
-10
-12
-14
1.0
RS"0Mrl'
0.5
~
r
~
~
RS·1.0 Mrl
........
i! DO5
~
-6.0
il o. 1
~
-
_-J.omA
-2.0mA
~-2,omA
/-1.omA
-0,5 mA
~
-4.0
>
!lj
-90%CUM
' 1 0 - ' 101 mA_
'-.
~
TA' 25 0C
I'\.
\\
\\
0
0
\
!
0
~
\
VOS'-15Vdc
FIGURE 6 - EaUIVALENT INPUT NOISE VOLTAGE
FIGURE 5 - "ON" DRAIN-50URCE VOLTAGE
-5.0
TA • 125 0C
VGS, GATE·SOURCE VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (OC)
0
-
I.
i.
-2.0
-0. 1
0
~
c
-40
-5 0
-55
~~
TA' 55 0C
I-
~~
-30 -
TA 25°C
-20
~
i
VGS, GATE,SOURCE VOLTAGE (VOLTSI
-
I--
0.0 110
RS--l0okrl
VOS - -15 V
1-10 - -2.0 mA
I-l1iiir~
Il1D
1000
I, FREQUENCY (Hoi
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-76
10,000
100.000
3N157,3N158
SWITCHING CHARACTERISTICS
(TA = 250 C)
FIGURE 7 - TURN-ON DELAY TIME
FIGURE 8 - RISE TIME
100
!w
100
50
..........
"
;:::
>-
g
z
10
0
;i:
"
0-
-...
20
-
5.0
F=
-
RG -~:t
RG' RO
0
vor V,GS '-15 V
~ 50
~
w
";::
II
~
IN-
r--..
-Vos=VGS=-15V
30
ii:
20
VOS = VGS = -10 V and -15 V--VOS = VGS = -10 V
~
--
Vos = VGS = -10 V
L_-V
__
II
1
-2.0
10, DRAIN CURRENT (mAl
-1.0
1 1
-5.0
10
-0.5
-10
r-
~
1-1-
J- t-I-
-1.0
200
O~
0
10
50
-2.0
10, DRAIN CURRENT (mAl
-5.0
-10
FIGURE 10 - FALL TIME
500
RG - 0'-
!
~RG=Ro
......
..........
200
-;5~
Jos-IVGi
0
.-..t.
o
20
0-
10
;:;- I-
VOS VG'-IOV
5.0
-0.5
-2.0
-1.0
vo~-JGSI -15V
-..;:
:....~
r"-
VOS'VGS=-10V
20
10
-0.5
-10
-5.0
-RG'o
---Rrl°
~I'
' .... I"
-:::::-..................
--- - ...,.. -
~
~
£1
,.::::- r-
-
FIGURE 9 - TURN-OFF DELAY TIME
~
......
........I r----...
-..........
t - I-++-l·
2.0
-0.5
500
";::
RG-ot
RG - RO
10, DRAIN CURRENT (mAl
-1.0
r.:-
fr- r-- ~.::::
-2.0
10, DRAIN CURRENT (mAl
-5.0
-10
FIGURE 11 - SWITCHING CIRCUIT and WAVEFORMS
Voo
SET VOS = 10 V
~ •• ~
t--'lll1ollk~......_-o V
IN~4.5~1
oUTPUTTO SAMPLING
OSCILLOSCOPE
50
tr= tfS2.O ns
PW= 10J,lS
OUTY CYCLE
~
2.0%
VOS
-IOV
t - -....+-+--------+---i:....--
FIGURE 12 - SWITCHING CIRCUIT with MOSFET
EOUIVALENT MODEL
-VOO
RO
I
1_
I- -I-I---+---.._---'+-I
-0 Vos
C
C'SS
Lf~--
'_ds _
-'
fCd_(
.. bl I
The switching characteristics shown above were measured
in a test circuit similar to Figure 11. At the beginning of the
switching interval, the gate voltage is at ground and the gate
source capacitance (C gs • Crss • Crss ) has no charge. The drain
voltage is at Voo and thus the feedback capacitance (C rss ) is
charged to VOO. Similarly, the drain substrate capacitance
(Cd(sub)) is charged to VOO since the substrate and source are
connected to ground.
Ouring the turn-on interval Cgs is charged to VGS (the input
voltage) through RG (generator impedance) (Figure 12). Crss
must be discharged to VGS • VO(on) through RG and the parallel combination of the load resistor (RO) and the channel
resistance (rds). In addition, Cd(sub) is discharged to a low
value (VO(on)) through RO in parallel with rds. Ouring turn-off
this charge flow is reversed.
Predicting turn-on time proves to be somewhat difficult since
the channel resistance (rds) is a function of the gate source
voltage (VGS). As Cgs becomes charged VGS is approaching
Yin and rds decreases (see Figure 5) and since Crss and Cd(sub)
are charged through rds, turn-on time is quite non-linear.
If the charging time of Cgs is short compared to that of Crss
and Cd(sub), then rds (which is in parallel with RO) will be low
compared to RO during the switching interval and will largely
determine the turn-on time. On the other hand, during turnoff rds will be almost an open circuit requiring Crss and Cd(sub)
to be charged through RO and resulting in a turn-off time that
is long compared to the turn-on time. This is especially noticeable for the curves where RG • 0 and Cgs is charged through
the pulse generator impedance only.
The switching curves shown with RG • RO simulate the
switching behavior of cascaded stages where the driving
source impedance is normally the same as the load impedance.
The set of curves with RG· 0 simulates a low source impedance
drive such as might occur in complementary logic circuits.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-77
3N169
3N170
3N171
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
2S
Vdc
Drain-Gate Voltage
VDG
±3S
Vdc
Gate-Source Voltage
VGS
±35
Vdc
ID
30
mAde
Drain Current
Total Device Dissipation @ TA
Derate above 2S'C
=
2S'C
PD
300
1.7
mW
mWrC
Total Device Dissipation @ TC
Derate above 2S'C
= 2S'C
PD
800
4.S6
mW
mW/'C
Junction Temperature Range
TJ
175
·C
Storage Temperature Range
TstQ
-65 to +175
·C
2 Source
MOSFET
SWITCHING
N-CHANNEL -
ENHANCEMENT
Refer to 2N4351 for graphs.
•
ELECTRICAL CHARACTERISTICS
(TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)DSX
25
-
Vdc
-
10
1.0
nAdc
!11
~
10
o -1.0 V / . /
~ S.o
~ 5.o L
4.o
6
r
/'\
~
j/..1
K.J....2.0
"-
L
4.0
6.0
8.0
'\..
./
./
~
10
'"
I
-
./
r-"'
VG1S= 1.0 V
12
14
'"
.v
~ +kov-
'"
"""'-l'
........
~.O\
~':1.5
1
16
18
./
V
/l
I'~ I--
/
./
. / ./'
::..? ....
~
~ e;-
,.,
",... +I.ov- t-::::;
OV= C:=
VG2S= -1.0 V- r--
-1.0
-0.5
+0.5
VG1S, GATE·ONE·TO·SOURCE VOLTAGE (VOLTS)
VOS = 15 V
lOSS = 12.8 rnA
20
.......
~
f:: 1.0 kHz
~ 11
1= 10
/
~ 9.0
/
~ 8.0
..I
~ 7.0
/, I
~ 6. 0
'/
~ 5. 0
'11/,
04. 0
'//
~ 3.0
:5 2.0 L
oU
01.1"
-1.0
/+0.5V
\.
/
-'" Il(
I
~ 3.o -I-~,;G2S =
2
<> .0,
""I .0
:;i 0
~
0
'I
'/./rJ".
A
I\..
~7. o
/
/
.A
1
J
+1.0
0" 14
113
;:; 12
.........
OV
I
VG2S' +4.0 V
FIGURE 7 - SMALL-SIGNAL COMMON·SOURCE GATE·ONE
FORWARD TRANSFER ADMITTANCE versus
GATE·ONE to SOURCE VOLTAGE
VG2S = +4.0 V
....-
. / -150
l - t-- t -
0.5
0.6
0.7
-20
E
2. 1
~
8
LL
.§
L
1.
«
1.
8
1. 2
V
~ O. 9
~~
V
L
O.6
/
O.3
./'
V
0
0.1
1.0
o
0.2
0.3
0.4
0.5
(See Schemetic Figure 12)
•
14
II
13
~
Gp
1/
12
~
'"
~
11
"
"
GO
10
30
50
70
"- r-....
0::
GO
./
NF
100
300
500 700 1000
RS. SOURCE RESISTANCE (OHMS)
3000
The Test Circuit shown in Figure 12 was used to generate Power Gain
and Noise Figure as a function of Source Resistance curves.
FIGURE 11 - TH)RD ORDER INTERMODULATION DISTORTION
(See Schematic Figure 12)
10 = 5.0 to 10 mAde
0
~
01-- t-
w
~ -20
>-
'"
~
'"
~
-4 0
-12 0 /
-120
o,~" Inl""Jl ....
Point
Output
-
'"
V
V
I
II
3rd Order
IMD Output
V
~
I
V-
FU~dame~tal
-60
~ -80
>=>
c -100
d,d
IVasi• 15 ~de I
fl· 499 MHz
12· 500 MHz
L
/V
/
-100
-80
-60
-40
INPUT POWER PER TONE (dBM)
-20
Figure 11 shows the typical third order intermodulation distortion
(lMD) performance of the 3N209 and 3N21 0 at 500 MHz.
Both fundamental output and third order IMD output characteristics
are plotted. The curves have been extrapolated to show the third order
intermodulation output intercept point.
The performance is typical for 10 between 5.0 mAde and 10 mAde.
The test circuit shown in Figure 12 was used to generate the IMO Data.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-90
'"
~
~
/
J'...
~
1.5
FIGURE 10 - POWER GAIN AND NOISE FIGURE versus SOURCE RESISTANCE
/'
>-
4.5~
3.0i
0.6
f. FREUUENCY (GHz)
11
6.0~
gos
V
"
.5~
7
~
f. FREQUENCY (GHz)
10 I- VOO'15 Vde
I- 10 '10 mAde
VG2' 6 Vde
I- f'500MHz
E
VV
V
jbos
0.5)
1
9.0~
~V
5
~
-25.J
0.9
0.8
i
1
2. 4
!l
0.7
0.8
0.9
1.0
3N209
FIGURE 12 - TEST CI RCUIT FOR POWER GAIN, NOISE FIGURE
AND THIRD ORDER INTERMODULATION DISTORTION
500
Output
VOO
500
Input
C3
Cl
J
Ll
C2
•
C1 = 1.0·20 pF, JOHANSON Air Variable Cap. (14.5 pF Nominal)
C2"'" 1.()..1 0 pF, JOHANSON Air Variable Cap (S.4 pF Nominal)
Voo
C3, ell'" 470 pF, Low Inductance F8.dthru Cap.
C4, ca, eg, C10= 250 pF. L.ow Inductance, UNDERWOOD Cap. (J-l0n
C5"" 0.4-6.0 pF. JOHANSON Air Variable Cap. (0.92 pF Nominal)
C6"" 1.0-10 pF. JOHANSON Air Variable Cap. (5.9 pF Nominal)
C7 - 1.0-10 pF, JOHANSON Air V.rlable Cap (3.0 pF Nominal)
L1 - 2.52)( 0.1 inch•• }
®
L2" 0.4)( 0.1 inch..
On 2 sided glass Teflon, 1 oz. copper clad, 1/16"
L.3"" 1.23 x 0.2 Inches
fR
=
2.55
(8)Trademark of E.I. Dupont, OeNemours and Co .• Inc.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-91
3N211
3N212
3N213
MAXIMUM RATINGS
Rating
Symbol
3N211
3N212
3N213
Unit
VDS
27
35
Vde
VDG1
VDG2
35
35
40
40
Vdc
Drain-Source Voltage
Drain-Gate Voltage
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
1 Drain
Drain Current
ID
50
mAde
Gate Current
1m
IG2
±10
±10
mAde
GG!:~
e\@,ource
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
PD
360
2.4
mW
mWrC
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
PD
1.2
8.0
Watt
mWrC
300
'c
DUAL-GATE MOSFET
VHF AMPLIFIER
'c
'c
N-CHANNEL -
lL
Lead Temperature, 1116" From Seated
Surface for 10 seconds
Junction Temperature Range
TJ
-65 to +175
Storage Temperature Range
TstQ
-65 to +175
3
4 Substrate
Case
DEPLETION
Refer to MPF211 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage(1)
(lD = 10 !LAdc, Vms = VG2S = -4.0 Vde)
Vdc
V(8R)DSX
3N211,212
3N213
Instantaneous Drain-Source Breakdown Voltage)
(lD = 10 !LAde, VG1S = VG2S = -4.0 Vde)
25
30
V(BR)DSX
3N211,212
3N213
27
35
-
-
Vdc
Gate 1-Souree Breakdown Voltage(2)
(lG1 = ±10 mAde, VG2S = VDS = 0)
V(BR)G1S0
±6.0
-
Vde
Gate 2-Source Breakdown Voltage(2)
(lG2 = ±10 mAde, Vms = VDS = 0)
V(BR)G2S0
±6.0
-
Vde
Gate 1 Leakage Current
(VG1S = ±5.0 Vde, VG2S
(VG1S = -5.0 Vdc, VG2S
= VDS = 0)
= VDS = 0, TA =
Gate 2 Leakage Current
(VG2S = ±5.0 Vdc, VG1S
(VG2S = -5.0 Vdc, VG1S
= VDS =
= VDS =
IG1SS
150'C)
IG2SS
Gate 1 to Source Cutoff Voltage
(VDS = 15 Vde, VG2S = 4.0 Vdc, ID
Gate 2 to Source Cutoff Voltage
(VDS = 15 Vde, VG1S = 0, ID
0)
0, TA
=
150'C)
-
±10
-10
nAde
!LAde
-
±10
-10
nAde
pAde
Vdc
VmS(off)
=
3N211,213
3N212
20 !LAde)
-0.5
-0.5
-5.5
-4.0
-0.2
-0.2
-2.5
-4.0
17
15
40
35
0.005
0.05
Vdc
VG2S(off)
=
3N211
3N212,213
20 pAde)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(3)
(VDS = 15 Vdc, VG1S = 0, VG2S
=
4.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance(4)
(VDS = 15 Vde, VG2S = 4.0 Vde, Vms
Reverse Transfer Capacitance
(VDS = 15 Vde, VG2S = 4.0 Vde, ID
=
= 0, f =
1.0 mAde, f
=
3N211,212
3N213
Crss
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDD = 18 Vdc, VGG
(VDD = 24 Vdc, VGG
= 7.0 Vdc, f = 200 MHz)
= 6.0 Vdc, f = 45 MHz)
mmhos
IVfsl
1.0 kHz)
3N211
3N211,13
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-92
pF
3N211,3N212,3N213
ELECTRICAL CHARACTERISTICS (continued) (TA - 25'C unless otherwise noted)
Characteristic
Common Source Power Gain
(VDD = 18 Vdc, VGG = 7.0 Vdc,
(VDD = 24 Vdc, VGG = 6.0 Vdc,
(VDD = 24 Vdc, VGG = 6.0 Vdc,
(VDD = 18 Vdc, lLO = 245 MHz,
Symbol
Min
Max
24
29
27
21
35
37
35
28
5.0
4.0
3.5
12
7.0
6.0
Gps
I = 200 MHz)
I = 45 MHz)
I = 45 MHz)
IRF = 200 MHz)
3N211
3N211
3N213
3N212
3N211
3N212
3N211,213
Gain Control Gate-Supply Voltage(S)
(VDD = 18 Vdc, aG ps = - 30 dB, I
(VDD = 24 Vdc, dGos = -30 dB, I
3N211
2N211,213
= 200 MHz)
= 45 MHz)
Gc (6)
dB
BW
Bandwidth
(VDD = 18 Vdc, VGG = 7.0 Vdc, I = 200 MHz)
(VDD = 18 Vdc, lLO = 245 MHz, IRF = 200 MHz)
(VDD = 24 Vdc, VGG = 6.0 Vdc, I = 45 MHz)
VGG(GC)
Unit
MHz
Vdc
-
-2.0
±1.0
(1) Measured after live seconds 01 applied voltage.
(2) All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate-voltage limiting
network is lunctioning properly.
(3) Pulse Test: Pulse Width = 300 !-,S, Duty Cycle'" 2.0%.
(4) This parameter must be measured with bias voltages applied lor less than 5 seconds to avoid overheating. The signal is applied to gate
1 with gate 2 at ac ground.
(5) dG ps is delined as the change in Gps Irom the value at VGG = 7.0 Volts (3N211) and VGG = 6.0 Volts (3N213).
(6) Power Gain Conversion. Amplitude at input Irom local oscillator is adjusted lor maximum Gc .
I
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-93
BF244,A,B,C
CASE 29·04, STYLE 22
TO·92 (TO·226AA)
30raln
G~~
1 Source
BF245,A,B,C
3 Drain
CASE 29·04, STYLE 23
TO·92 (TO·226AA)
2 Source
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VDS
±30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
ID
100
mAdc
IG(f)
10
mAdc
PD
360
2.88
mW
mW/oC
Tsta
-65 to +150
°C
Rating
Drain Current
Forward Gate Current
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Storage Channel Temperature Range
JFET
VHF/UHF AMPLIFIER
N-CHANNEL - DEPLETION
Refer to 2N4416 for graphs.
•
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 1.0 flAdc, VDS = 0)
Gate-Source
(VOS = 15 Vdc, ID
= 200
-
-
-
7.5
2.2
3.8
7.5
0.5
-
8
-
-
5
30
V
VGS
~A)
BF245(11.
BF245A,
BF245B,
BF245C,
BF244(2)
BF244A
BF244B
BF244C
Gate-Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 10 nA)
Gate Reverse Current
(VGS = 20 Vdc, VOS
V
V(BR)GSS
0.4
0.4
1.6
3.2
V
VGS(off)
IGSS
= 0)
-
nA
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current
(VOS = 15 Vdc, VGS = 0)
mA
lOSS
BF245 (1).
BF245A,
BF245B,
BF245C,
BF244(2)
BF244A
BF244B
BF244C
2
2
6
12
25
6.5
15
25
3.0
6.5
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f = 1 KHz)
IYfsl
Output Admittance
(VOS = 15 Vdc, VGS
IYosl
= 0, f = 1 KHz)
IYfsl
Reverse Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f
IYrsl
Input Capacitance
(VOS = 20 Vdc, - VGS
Output Capacitance
(VOS = 20 Vdc, -VGS
= 0,
Cut-off Frequency(3)
(VOS = 15 Vdc, VGS
= 0)
RG
mmhos
1.0
MHz)
pF
Ciss
3
pF
Crss
= 1 MHz)
0.7
pF
Coss
= 1 Vdc, f = 1 MHz)
Noise Figure
(VOS = 15 Vdc, VGS
mmhos
5.6
= 1 Vdc)
Reverse Transfer Capacitance
(VOS = 20 Vdc, -VGS = 1 Vdc, f
~mhos
40
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f = 200 MHz)
= 200
mmhos
0.9
db
NF
= 1 KO, f = 100 MHz)
1.5
MHz
F(Yfs)
700
(1) On orders agamst the BF245, any or ali subgroups might be shipped.
(2) On orders against the BF244, any or ali subgroups might be shipped.
(3) The frequency at which gfs is 0.7 of its value at 1 KHz.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-94
BF246,A,B,C
30ram
G~~
CASE 29-04. STYLE 22
TO-92 (TO-226AA)
1 Source
BF247,A,B,C
1 Dram
G:'~
CASE 29-04. STYLE 5
TO-92 (TO-226AA)
2 Source
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
±25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
ID
100
mAde
IGlfl
10
mAdc
PD
360
2.88
mW
mW;oC
Tstg
-65to+150
°C
Drain Current
Forward Gate Current
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Storage Channel Temperature Range
JFET
SWITCHING
N-CHANNEL- DEPLETION
Refer to MPF4391 for graphs.
ELECTRICAL CHARACTERISTICS (T A
I
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
25
-
-
0.5
1.5
3
5.5
-
14
4
7
12
0.6
-
14.5
-
-
5
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG ~ 1 fJ.A, VDS ~ 0)
Gate-Source
(VOS ~ 15 V, 10
ViBR)GSS
VGS
~
200 fJ.A)
BF246,
BF246A,
BF246B,
BF246C,
BF247
BF247A
BF247B
BF247C
Gate-Source Cutoff Voltage
(VOS ~ 15 V, 10 ~ 10 nA)
Gate Cutoff Current
(VGS ~ 15 V, VOS
VGS(off)
IGSS
~
D)
V
V
V
nA
ON CHARACTERISTICS
Zero-Gate Voltage Orain Current
(VDS ~ 15 V, VGS ~ 0)
mA
lOSS
BF246,
BF246A,
BF246B,
BF246C,
BF247
BF247A
BF247B
BF247C
30
30
60
110
250
BO
140
250
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance
(VOS ~ 15 V, ID ~ 10 rnA, I
1 kHz)
8
Reverse Transfer Capacitance
(VDS ~ 15 V, ID ~ 10 rnA. I ~ 1 kHz)
Crss
Input Capacitance
(VDS ~ 15 V, ID ~ 10 rnA, I
Cin
~
1 MHz)
Output Capacitance
(VDS ~ 15 V, ID ~ 10 rnA, I
~
1 MHz)
Cutoff Frequency
(VDS ~ 15 V, VGS
mmhos
IYlsl
~
23
pF
3.3
pF
6
pF
Cout
5
MHz
F(Yls)
~
450
0)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-95
•
BF256,A,B,C
CASE 29-04, STYLE 23
TO-92 (TO-226AA)
"I o~~"~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
±30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
Drain Current
Forward Gate Current
~
Total Device DissipatIOn @ TA
Derate above 25°C
1 Gate
ID
100
mAdc
IGIII
10
mAdc
JFET
VHF/UHF AMPLIFIER
PD
360
2.88
mW
mW/oC
N-CHANNEL - DEPLETION
Tstg
- 65 to +150
°C
25°C
Storage Channel Temperature Range
3
Refer to 2N4416 for graphs.
•
I
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
I
Characteristic
Typ
Max
Symbol
Min
Unit
V(BR)GSS
30
-
-
Vdc
VGS(off)
0.5
-
7.5
Vdc
-
-
5
nAdc
3
3
6
11
-
18
7
13
18
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ 1.0 flAdc, VOS ~ 0)
Gate-Source Voltage
(VOS ~ 15 Vdc, 10 ~ 200 flA)
Gate Reverse Current
(VGS ~ 20 Vdc, VDS
IGSS
~
0)
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current)
(VDS ~ 15 Vdc, VGS ~ 0)
mAdc
lOSS
BF256(1)
BF256A
BF256B
BF256C
-
SMALL-SIGNAL CHARACTERISTICS
5
-
mmhos
-
0.7
-
pF
Coss
-
1.0
-
pF
NF
-
7.5
-
db
Igls
-
1000
-
MHz
Gp
-
11
-
dB
Forward Transler Admittance
(VDS ~ 15 Vdc, VGS ~ 0, I ~ 1 kHz)
IYls I
4.5
Reverse Transfer Capacitance
(VOS ~ 20 Vdc, -VGS ~ 1Vdc, f
Crss
Output Capacitance
(VOS ~ 20 Vdc, VGS
~
Noise Figure
(VOS ~ 10 Vdc, Rs
470, f
~
0, I
~
Cut-off Frequency(2)
(VDS ~ 15 Vdc, VGS
~
Power Gain
(VOS ~ 15 Vdc, Rs
47 0, I
~
~
1 MHz)
1 MHz)
~
800 MHz)
0)
~800
MHz)
(1) On orders against the BF256, any or all subgroups might be shipped.
(2) The frequency at which gfs is 0.7 of Its value at 1 kHz.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-96
BFW10
BFWll
CASE 20-03, STYLE 1
TO-72 (TO-20SA)
3 Gate
2~4
MAXIMUM RATINGS
Rating
Drain~ase
Symbol
Value
Orain-Source Voltage
Vas
30
Vdc
Orain-Gate Voltage
VaG
30
Vdc
VGSR
-30
Vdc
IGF
10
mAdc
Po
300
1.71
mW
mW/oC
TJ, T stg
-65 to +150
°C
Reverse Gate-Source Voltage
Forward Gate Current
Total Oevlce Oissipation @ TA
aerate above 25°C
~
25°C
Operating and Storage Junction
Temperature Range
Unit
1 Source
JFET
VHF/UHF AMPLIFIER
N-CHANNEL - DEPLETION
Refer to 2N4416 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
30
-
VGS(off)
-
-
8
6
Vdc
IGSS
-
-
0.1
nAdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG ~ 10 flAdc, Vas ~ 0)
Gate-Source Cutoff Voltage
(Vas ~ 15 Vdc, 10 ~ 0.5 nAdc)
Gate Reverse Current
(VGS ~ 20 Vdc, Vas
~
BFW10
BFWll
-
Vdc
0)
Gate-Source Voltage
(Vas ~ 15 Vdc, 10 ~ 400 flAdc)
BFWlO
Gate-Source Voltage
(Vas ~ 15 Vdc, 10 ~ 50 flAdc)
BFWll
VGS
2
-
7.5
Vdc
VGS
1.25
-
4
Vdc
3.5
3.0
-
-
6.5
6.5
mmhos
85
50
flmhos
-
C 1SS
-
-
5.0
pF
Crss
-
-
0.8
pF
VIs
3.2
-
-
mmhos
en
-
-
75
nV;VHz
NF
-
-
2.5
dB
ON CHARACTERISTICS
Zero-Gate Voltage Orain Current
(Vas ~ 15 Vdc, VGS ~ 0)
BFW10
BFWll
SMALL-SIGNAL CHARACTERISTICS
Forward Transadmittance
(Vas ~ 15 Vdc, VGS ~ 0, I
1 kHz)
BFW10
BFWll
VIs
~
Output Admillance
(Vas ~ 15 Vdc, VGS
1.0 kHz)
BFW10
BFWll
Vas
~
~
0, I
~
0 Vdc, I
~
1.0 MHz)
Reverse Transler Capacitance
(Vas ~ 15 Vdc, VGS ~ 0 Vdc, I
~
1.0 MHz)
Input Capacitance
(Vas
~
15 Vdc, VGS
Forward Transadmittance
(Vas ~ 15 Vdc, VGS ~ 0, I
~
200 MHz)
Equivalent Noise Voltage
(Vas ~ 15 Vdc, VGS ~ 0, I
~
25 Hz)
Noise Figure
(Vas ~ 15 Vdc, VGS
~
0 V, see Figures 1, 2, 3)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-97
-
-
•
BFW10, BFW11
FIGURE 1 - 100 MHz and 400 MHz NEUTRALIZED TEST CIRCUIT
r--------~-----------,
I
I
Neutralizing
L1
400 MHz
C1
7.0 pF
1.8 pF
C2
1000 pF
17 pF
I
C3
3.0 pF
1.0 pF
I
C4
1·12 pF
0.8·8.0 pF
___ JI
C5
1·12 pF
0.8-8.0 pF
C6
C.00151'F
0.0011'F
C7
0.0015 j.lF
0.001 j.lF
L1
3.0j.lH'
0.2 IJ,H"'·
L2
0.15 ""H'"
0.03 ",H"'·
L3
0.14j.1H'
O.022ILH '" '"
C3
E--+<-
I
C1
+---~
To 50
n
C4
_
Souroa :
C5
Rg'
I
L3
JCl '
':"
~
C6
)
-
':" I
Case
I
VGS
I To 500 n
I Load
L2
J[lC7
L- _ _ _ _':"~ t----=E-':".J~ ~
Common
VDS
t ID-LOmA
+15 V
Adjust V GS for
ID - 50 mA
VGS< a Volts
*L 1
NOTE:
The noise source iss hot-cold body
(AI L type 70 or equivalent) with a
test receiver (AI L type 136 or equivalent).
17 turns, (approx. - depends upon circuit layout) AWG #28
'" '" L 1
enameled copper wire, close wound on 9/32" ceramic coil
form. Tuning provided by a powdered iron slug.
L2
L3
•
VALUE
100 MHz
"C2
I
Input
I
I
Reference
Designation
I
Coil
4-1/2 turns, AWG #18 enameled copper wire, 5/16" long,
3/8" I.D. (AIR CDREI.
3·1/2 turns, AWG #18 enameled copper wire, 1/4" long,
3/8" I.D. (AIR CDREI.
L2
6 turns, (approx. - depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32" ceramic coil
form. Tuning provided by an aluminum slug.
1 turn, AWG #16 enameled copper wire, 3/8" I.D. (AI R
CDREI.
L3
1/2 turn, AWG #16 enameled copper wire, 1/4" 1.0. (AIR
COREl.
NOISE FIGURE
n channel =
2SoCI
FIGURE 3 - EFFECTS OF DRAIN CURRENT
FIGURE 2 - EFFECTS OF DRAIN-SOURCE VOLTAGE
10
6.5
i\
1\
8.0
~
w
:::>
'"to
1\
\
6.0
~
z
2.0
'"
w
'":::>to
u:
w
'"~
f:400MHz
4.5
~
I-- -
f=400MHz
3.5
--
.........
~
~-
r-...
z
2.5
I--
f;:: ~MHZI
1-
1.5
2.0
Vas: 15 V
VGS: 0 V
"-
100MHz
o
o
I"-
~
"r-...
4.0
u:
\
\
5.5
'\.
u:
i5
z
la:5.0mA
4.0
6.0
8.0
10
12
14
Vas, ORAIN·SOURCE VOLTAGE (VOLTSI
16
18
2.0
20
6.0
8.0
4.0
10, DRAIN CURRENT (mAl
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-98
10
12
14
BSl07,A
CASE 29-04. STYLE 30
TO-92 (TO-226AA)
MAXIMUM RATINGS
1 Drain
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous(l )
Pulsed(2)
10
10M
250
500
mAdc
Po
0.6
Watts
TJ. Tstg
-55 to 150
°c
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
~
3 Source
TMOS
SWITCHING
(1) The Power Dissipation of the package may result in a lower continuous drain
current.
(2) Pulse Width", 300 ,.... Duty Cycle'" 2.0%.
N-CHANNEL -
ENHANCEMENT
Refer to MFE9200 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Zero-Gate-Voltage Drain Current
(VOS = 130 V. VGS = 0)
lOSS
-
Drain-Source Breakdown Voltage
(VGS = O. 10 = 100 pAl
V(BR)OSX
IGSS
Characteristic
Typ
Max
Unit
-
30
nAdc
200
-
-
Vdc
-
0.01
10
nAdc
-
3.0
Vdc
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc. VOS
= 0)
ON CHARACTERISTICS'
Gate Threshold Voltage
(10 = 1.0 mAo VOS = VGS)
VGS(Th)
Static Drain-Source On Resistance
BS107
(VGS = 2.6 V. 10 = 20 mAl
(VGS = 10 V. 10 = 200 mAl
BS107A
(VGS = 10 Vdc)
(10 = 100 mAl
(10 = 250 mAl
rOS(on)
1.0
Ohms
-
-
-
28
14
-
4.5
4.8
6.0
6.4
Ciss
-
60
-
pF
Reverse Transfer Capacitance
(VOS = 25 V. VGS = O. f = 1.0 MHz)
Crss
-
6.0
-
pF
Output Capacitance
(VOS = 25 V. VGS
Coss
-
30
-
pF
400
-
mmhos
-
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS = 25 V. VGS
= O. f =
= O. f =
1.0 MHz)
1.0 MHz)
Forward Transconductance
(VOS = 25 V. 10 = 250 mAl
9fs
200
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
'Pulse Test: Pulse Width", 300 /LS. Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-99
•
85170
CASE 29-04, STYLE 30
TO-92 (TO-226AA)
1 Drain
~~
MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage
VOS
60
Vdc
Gate-Source Voltage
VGS
:t20
Vdc
10
0.5
Adc
Orain Current(1)
Total Oevice Oissipation Ca' TC
~
25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
0.83
-55 to
+ 150
Unit
3 Source
TMOS FET
SWITCHING
Wan
°c
N-CHANNEL -
ENHANCEMENT
(1) The Power Oissipation of the package may result in a lower continuous drain
current.
•
ELECTRICAL CHARACTERISTICS ITA
~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
-
0.01
10
nAdc
OFF CHARACTERISTICS
Gate Reverse Cu rrent
(VGS ~ 15 V, VOS ~ 0)
V(BR)OSS
60
90
-
Vdc
Gate Threshold Voltage
(VOS ~ VGS, '0 ~ 1.0 mAl
VGS(Th)
0.8
2.0
3.0
Vdc
Static Drain-Source On Resistance
rOS(on)
-
1.8
5.0
Ohms
'O(off)
-
-
0.5
,.,A
9fs
-
200
-
Turn-On Time
(10 ~ 0.2 A) See Figure 1
ton
-
4.0
10
ns
Turn-Off Time
(10 ~ 0.2 A) See Figure 1
toff
-
4.0
10
ns
Orain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 100,.,A)
ON CHARACTERISTICS(2)
(VGS
~
10 V, 10
~
Orain Cutoff Current
(VOS ~ 25 V, VGS
200 rnA)
~
0 V)
Forward Transconductance
(VOS
~
10 V, 10
~
mmhos
250 rnA)
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS ~ 10 V, VGS
~
0, f
~
1.0 MHz)
SWITCHING CHARACTERISTICS
(2) Pulse Test: Pulse Width", 300 I's, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-100
8S170
RESISTIVE SWITCHING
FIGURE 1 -
FIGURE 2 -
SWITCHING TEST CIRCUIT
SWITCHING WAVEFORMS
+ 25 V
125
n
20 dB
Pulse Generator
r-----,
I
,
50
I I'l
L
n
50
n Attenuator
I
I
____ J
50
n
Output I Vout
Inverted
(Vin Amplitude 10 Volts)
Input
FIGURE 3 -
VGS(th) NORMALIZED versus TEMPERATURE
Vin
FIGURE 4 -
11
ON-REGION CHARACTERISTICS
2.0
~
16
--
~
-
0
>
g 11
i
08
£;
Vi
:!i?
VOS - VGS
10 mA
'D
r--
-
04
r----
-----
o
50
50
100
150. C'
10
10
30
VDS. DRAIN·TO·SOURCE VOLTAGE (VOLTSI
TJ. JUNCTION TEMPERATURE
FIGURE 5 -
OUTPUT CHARACTERISTICS
FIGURE 6 100
80
t
u
z
;"
U
;1
j 40
10
20
30
VDS. DRAIN·TO·SOURCE VOLTAGE ,VOLTS,
40
l'IT-r-~-'
J
~
"
VGS
.
.
.
-
--f--
-- I-- -- C--'
rs
~
--
K
........
CISS -
.......
I
Coss
I10
Crss
10
30
40
50
VOS. ORAIN·TO·SOURCE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-101
-I- 1----
0V
. - - - I-.
"
--
t--
10
CAPACITANCE versus DRAIN-TO-SOURCE VOLTAGE
.
60
40
60
BSS89
CASE 29-04, STYLE 7
TO·92 (TO-226AAI
2 Drain
~
MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage
VOSS
200
Vdc
Gate-Source Voltage
VGS
:t2O
Vdc
Drain Current -
10
10M
400
BOO
mAdc
Po
0.6
4.B
Watts
mWFC
TJ, Tstg
-55to 150
°C
°JA
20B
°CIW
Continuous (1)
Pulsed (2)
Total Power Dissipation @ TA
Derate above 25°C
~
25°C
Operating and Storage
Temperature Range
Unit
, Source
TMOS FET
TRANSISTOR
N-CHANNEL -
Thermal Resistance Junction to Ambient
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
•
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)OSS
200
-
-
Zero Gate Voltage Drain Current
(VOS ~ 200 V, VGS ~ 0)
lOSS
-
0.1
60
/LAdc
Gate-Body Leakage Current
(VGS ~ 20 V, VOS ~ 0)
IGSS
-
0.01
100
nAdc
-
2.7
Vdc
-
0.6
1.B
-
0.45
1.2
3.0
500
700
-
-
4.5
6.0
6.0
6.0
-
9ls
140
400
-
mmhos
Input Capacitance
(VOS ~ 25 V, VGS ~ 0, I ~ 1.0 MHz)
Ciss
-
72
-
pF
Output Capacitance
(VOS ~ 25 V, VGS ~ 0, I ~ 1.0 MHz)
Coss
-
15
-
pF
Reverse Transfer Capacitance
(VOS ~ 25 V, VGS ~ 0, I ~ 1.0 MHz)
Crss
-
2.B
-
pF
Drain-Source Breakdown Voltage (VGS ~ 0, 10 ~ 0.5 rnA)
Vdc
ON CHARACTERISTICS'
Gate Threshold Voltage (10 ~ 1.0 rnA, VOS ~ VGS)
Drain-Source On-Voltage (VGS
(10 ~ 100 rnA)
(10 ~ 300 rnA)
(10 ~ 500 rnA)
~
VGS(th)
10 V)
VOS(on)
On-State Drain Current
(VOS ~ 25 V, VGS ~ 10 V)
10(on)
Static Drain-Source On-Resistance (VGS
(10 ~ 150 rnA)
(10 ~ 300 rnA)
(10 ~ 500 rnA)
~
10 Vdc)
rOS(on)
Forward Transconductance (VOS ~ 25 V, 10 ~ 300 rnA)
1.0
Vdc
-
rnA
Ohms
-
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS'
Turn-On Time (See Figure 1)
Turn-Off Time (See Figure 1)
(1) The Power Dissipation 01 the package may result in a lower continuous drain current.
(2) Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-102
BSS89
RESISTIVE SWITCHING
FIGURE 1 - SWITCHING TEST CIRCUIT
FIGURE 2 - SWITCHING WAVEFORMS
- 25 V
To Sampling Scope
n Input
r-TodB-l-_~~:-3..;50Vou
t
Output Vout
Inverted
FIGURE 3 - ON VOLTAGE ve•• u. TEMPERATURE
~
...'"
FIGURE 4 - CAPACITANCE VARIATION
10
200
5.0
160
,
180
'"~
>
~
:::>
5l
1.0
'"
0.5
z
a:
0
~ 0.2
>
0.1
-55
--
VGS = 10 V I
2.0
a
250 mA
~
-35
~14 0
I--
I
~
12
0,
~ 10
0:\
80
060
§ r
I--
100 mA
Ciss
o \
a \ i'-
-15
-1.0
25
45
65
B5
105
125
0.8
10
~ o.
/
3
.9 O. 2
10/
~ 06
:e
~ o. 5
a'i
/
~
:::>
u
o. 4
~
o.3
~
2.0
50
t.
,/
5.0 v-
/
/
4.0 v-
I
.......
§
/
1.0
40
'I
,//
;;EO 2
'I
o
O. 1 V
/
O. 1
0
o. 7
1
a
30
FIGURE 6 - OUTPUT CHARACTERISTIC
II
06
:5
.... O. 5
z
~
O.4
20
VDS. DRAIN - SOURCE VOLTAGE IVOLTSI
/
ves: 10V
t--
Coos r,.-rss
\.
0
:45
FIGURE 5 - TRANSFER CHARACTERISTIC
~
= 0V
z
TJ. JUNCTION TEMPERATURE I'CI
0.7
VGS
I
3.0 V
/'"
3.0
4.0
1.0
6.0
7.0
B.O
9.0
2.0
10
4.0
VGs. GATE·SOURCE VOLTAGE IVOLTSI
6.0
8.0
FIGURE 7 - SATURATION CHARACTERISTIC
0.7
~ 0.6
....~
,....
0.5
a'i
/
~ 0.4
/ . ;...---
u
i
~ o. 1
.....-
v
V
-~
5.0 V
,h/
o. 3
4.0 V
./
~o. 2
10
12
14
VDS. DRAIN·SOURCE VOLTAGE (VOLTSI
~
./ . , /
Y
/
3.0 V
"..
10
20
3.0
40
VDS. DRAIN·SOURCE VOLTAGE ,VOLTS)
5.0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-103
16
18
20
•
IRFD1Z0
IRFD1Z3
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS
=
20 kn)
Symbol
IRFD1Z0
IRFD1Z3
Unit
VOSS
100
60
Vdc
VDGR
100
60
Vdc
Gate-Source Voltage
Drain Current
Continuous TC
Pulsed
Vdc
±20
VGS
Adc
=
25°C
0.5
4.0
10
10M
Total Power Dissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage
Temperature Range
TJ, Tstg
0.4
3.2
1.0
8.0
Watts
mWrC
+ 150
-55 to
CASE 370·01, STYLE 1
2 Dram
-" ;~
1 Source
TMOS FET
TRANSISTOR
°C
THERMAL CHARACTERISTICS
N-CHANNEL -
Thermal Resistance Junction to
Ambient (Free Air Operation)
I
ENHANCEMENT
120
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
V(BR)DSS
100
60
-
Max
Unit
OFF CHAIlACTERIStiCS
Drain-Source Breakdown Valtage
(VGS = 0, 10 = 250 /LA)
Zero Gate Voltage Drain Current
IRFD1Z0
IRFD1Z3
(VOSS
=
Rated VOSS, VGS
Gate-Body Leakage Current, Forward
(VGSF
Gate-Body Leakage Current, Reverse
(VGSR
=
0 V)
= 20 V)
= 20 V)
-
Vdc
-
-
250
/LAde
IGSSF
-
500
nAdc
IGSSR
-
-
500
nAdc
VGS(th)
2.0
-
4.0
Vdc
rOS(on)
-
-
3.4
3.2
Ohms
0.5
0.4
-
-
-
lOSS
ON CHARACTERISTICS
Gate Threshold Voltage
(10 = 250 !LA, VOS = VGS)
Static Drain-Source On-Resistance(l)
(VGS = 10 Vdc, 10 = 0.25 A)
IRF01Z0
IRF01Z3
On-State Drain Current(l)
(VGS = 10 V, VOS = 5.0 V)
Adc
10(on)
IRF01Z0
IRFD1Z3
Forward Transconductance(l)
(10 = 0.25 A, VDS = 5.0 V)
9fs
0.25
-
mhos
CAPACITANCE
Input Capacitance
(VDS
Output Capacitance
= 25 V, VGS =
f = 1.0 MHz)
-
-
70
Coss
-
30
Crss
-
-
10
td(on)
-
-
20
tr
-
-
25
Ciss
0
Reverse Transfer Capacitance
pF
SWITCHING CHARACTERISTICS
Turn-On Oalay Time
Rise Time
(VDS = 0.5 V(BR)DSS,
10 = 0.25 A. Zo = 50 ll)
ns
-
-
25
If
-
20
IRFD1Z0
IRFDl Z3
VF
-
-
1.4
1.3
Vdc
-
Continuous Source Current, Body Diode
IRFD1Z0
IRFD1Z3
IS
-
0.5
0.4
Adc
Pulsed Source Current, Body Diode
IRFD1Z0
IRFD1Z3
ISM
-
-
4.0
3.2
A
Turn-Off Delay Time
Fall Time
Id(off)
SOURCE·DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
Forward Turn-On Time
Reverse Recovery Time
(VGS
= 0)(1)
I
I
IS
IS
= 0.5 A,
= 0.4 A,
(IS
=
Rated IS, VGS
=
0)
-
negligible
ton
trr
-
(1) Pulse Test: Pulse W,dth", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
6·104
100
ns
-
IRFDll0
IRFDl13
MAXIMUM RATINGS
Symbol
IRFD110
IRFD113
Unit
Drain-Source Voltage
Rating
VDSS
100
60
Vdc
Drain-Gate Voltage (RGS = 20 kl1)
VDGR
100
60
Vdc
Gate-Source Voltage
Vdc
±20
VGS
Adc
Drain Current
Continuous TC = 25°C
Pulsed
1.0
8.0
10
IDM
0.8
6.4
Watts
Total Power Dissipation
@! TC = 25°C
Derate above 25°C
PD
Operating and Storage
Temperature Range
TJ, Tstg
1.0
8.0
mWfC
-55to +150
°c
120
°CIW
CASE 370-01, STYLE 1
2 Drain
-" ~
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Ambient
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
I
Characteristic
Typ
Symbol
Min
Max
Unit
V(BR)DSS
100
60
-
Vdc
-
-
-
-
250
jJ.Adc
500
nAdc
-500
nAdc
VGS(th)
2.0
-
4.0
Vdc
rDS(on)
-
-
0.6
0.8
Ohms
1.0
0.8
-
-
9ls
0.8
-
-
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, ID = 250 jJ.A)
Zero Gate Voltage Drain Current
IRFDll0
IRFDl13
(VDSS
=
Rated VOSS, VGS
Gate-Body Leakage Current, Forward
(VGSF
Gate-Body Leakage Current, Reverse
(VGSR
=
=
=
0 V)
20 V)
IDSS
IGSSF
-20 V)
IGSSR
-
ON CHARACTERISTICS
Gate Threshold Voltage
(10 = 250 jJ.A, VDS = VGS)
Static Drain-Source On-Resistance(l)
(VGS = 10 Vdc, ID = 0.8 A)
IRFDll0
IRFOl13
On-State Drain Current(l)
(VGS = 10 V, VDS = 5.0 V)
Adc
ID(on)
IRFOll0
IRFDl13
Forward Transconductance(l)
(lD = 0.8 A. VDS = 5.0 V)
-
mhos
CAPACITANCE
Input Capacitance
(VDS = 25 V, VGS = 0
1= 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
-
200
Coss
-
-
100
erss
-
-
25
td(on)
-
-
20
tr
-
25
td(off)
-
-
25
tl
VF
-
-
2.5
2.0
Vdc
1.0
0.8
Adc
8.0
6.4
A
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
(VDS = 0.5 V(BR)DSS,
ID = 0.8 A, Zo = 50 fl)
Turn-Off Oelay Time
Fall Time
ns
20
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS = 0)
IS = 1.0 A, IRFD110
IS = 0.8 A, IRFD113
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
IRFDll0
IRFD113
IS
-
IRFDll0
IRFOl13
ISM
-
(Is = Rated IS, VGS = 0)
ton
trr
-
-
negligible
-
(1) Pulse Test: Pulse Width", 300 jJ.S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-105
-
100
ns
-
•
IRFD120
IRFD123
MAXIMUM RATINGS
CASE 370-01, STYLE 1
Rating
Symbol
IRFD120
IRFD123
Unit
Drain-Source Voltage
VOSS
100
60
Vdc
Drain-Gate Voltage
(RGS ~ 20 kO)
VDGR
100
60
Vdc
Gate-Source Voltage
Drain Current
Continuous T C
Pulsed
±20
VGS
2 Drain
Vdc
Adc
~
25°C
10
10M
Total Power ~issipation
@TC ~ 25°C
Derate above 25°C
1.1
4.4
1.3
5.2
Po
1.0
8.0
Operating and Storage Temperature Range
TJ, Tstg
+ 150
-55 to
, Source
Watts
mWrC
TMOS FET
TRANSISTOR
°c
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
N-CHANNEL -
120
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
100
60
-
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 250 p.A)
Zero Gate Voltage Drain Current
Vdc
V(BR)DSS
IRFD120
IRFD123
(VDSS ~ Rated VDSS, VGS ~ 0 V)
IDSS
Gate-Body Leakage Current, Forward
(VGSF ~ 20 V)
IGSSF
Gate-Body Leakage Current, Reverse
(VGSR ~ -20 V)
IGSSR
-
-
-
-
250
p.Adc
-
500
nAdc
-500
nAdc
2.0
-
4.0
Vdc
-
-
0.3
0.4
1.3
1.1
-
-
ON CHARACTERISTICS
Gate Threshold Voltage
(lD ~ 250 p.A, VOS ~ VGS)
VGS(th)
Static Drain-Source On-Resistance(1)
(VGS ~ 10 Vdc, 10 ~ 0.6 A)
rDS(on)
IRFD120
IRFD123
On-State Drain Current(1)
(VGS ~ 10 V, VOS ~ 5.0 V)
Ohms
IRFD120
IRFD123
Forward Transconductance( 1)
(10 ~ 0.6 A, VOS ~ 5.0 V)
-
Adc
10(on)
gts
0.9
Ciss
-
-
-
mhos
CAPACITANCE
Input Capacitance
(VOS ~ 25 V, VGS ~ 0
f ~ 1.0 MHz)
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
-
-
600
pF
400
100
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tdlon)
Rise Time
(VOS = 0.5 V(BR)OSS,
10 ~ 0.6 A, Zo ~ 50 il)
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
-
-
100
-
70
-
2.5
2.3
Vdc
1.3
1.1
Adc
5.2
4.4
A
40
ns
70
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS ~ 0)
IS
IS
~
~
1.3 A. IRF0120
1.1 A, IRF0123
VSO
Continuous Source Current, Body Diode
IRFD120
IRF0123
IS
Pulsed Source Current, Body Diode
IRFD120
IRFD123
ISM
(IS ~ Rated IS, VGS = 0)
ton
Forward Turn-On Time
Reverse Recovery Time
I
I
trr
-
-
negligible
-
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-106
-
280
ns
-
IRFD210
IRFD213
MAXIMUM RATINGS
Symbol
IRFD210
IRFD213
Unit
Drain-Source Voltage
Rating
VOSS
200
150
Vdc
Drain-Gate Voltage
(RGS ~ 20 ill)
VDGR
200
150
Vdc
Gate-Source Voltage
Drain Current
Continuous TC
Pulsed
±20
VGS
CASE 370-01, STYLE 1
2 Drain
Vdc
Adc
~
25°C
10
10M
Total Power Dissipation
0.6
2.5
0.45
1.8
Po
@TC~25°C
Derate above 25°C
Operating and Storage Temperature Range
TJ, TstQ
1 Source
1.0
0.008
Watts
mWrC
-55 to +150
°c
120
°CIW
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC
N-CHANNEL -
ENHANCEMENT
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 250 pA)
Vdc
V(BR)DSS
IRFD210
IRFD213
200
150
-
-
-
-
-
250
pAdc
Gate-Body Leakage Current, Forward
(VGSF ~ 20 V)
IGSSF
-
500
nAdc
Gate-Body Leakage Current, Reverse
(VGSR ~ -20 V)
IGSSR
-
-
-500
nAdc
2.0
-
4.0
Vdc
-
-
1.5
2.4
1.5
2.4
-
gts
0.5
-
-
Zero Gate Voltage Drain Current
(VOSS ~ Rated VOSS, VGS ~ 0 V)
lOSS
ON CHARACTERISTICS
Gate Threshold Voltage
(10 ~ 250 pA, VDS ~ VGS)
VGS(th)
Static Drain-Source On-Resistance(l)
(VGS ~ 10 Vdc, 10 ~ 0.3 A)
rDS(on)
IRFD210
IRFD213
On-State Drain Current(l)
(VGS ~ 10 V, VDS ~ 5.0 V)
Ohms
ID(on)
IRFD210, IRFD21 1
IRFD212,IRFD213
Forward Transconductance(l)
(10 ~ 0.3 A, VDS ~ 5.0 V)
-
Adc
mhos
CAPACITANCE
Ciss
-
-
150
Coss
-
80
erss
-
-
td(on)
-
tr
-
25
td(oft)
-
tt
-
-
15
VSD
-
-
2.0
1.8
Vdc
IRFD210
IRFD213
IS
-
0.6
0.45
Adc
IRFD210
IRFD213
ISM
-
2.5
1.8
A
Input Capacitance
(V OS ~ 25 V, VGS ~ 0
t ~ 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
pF
25
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
(VDS = 0.5 V(BR)DSS,
10 ~ 0.3 A, Zo ~ 50 n)
Turn-Oft Delay Time
Fall Time
15
ns
15
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS ~ 0)
IS
IS
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
~
~
0.6 A, IRFD210
0.45 A, IRFD213
-
(IS ~ Rated IS, VGS ~ 0)
negligible
ton
trr
-
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-107
290
ns
-
II
IRFD220
IRFD223
MAXIMUM RATINGS
Rating
Symbol
IRFD220
IRFD223
Unit
Drain-Source Voltage
VOSS
200
150
Vdc
Drain-Gate Voltage
(RGS = 20 kO)
VOGR
200
150
Vdc
Gate-Source Voltage
±20
VGS
Drain Current
Continuous T C = 25'C
Pulsed
CASE 370-01, STYLE 1
10
10M
Total Power Dissipation
@TC=25'C
Oerate above Z5'C
0.8
2.4
0.7
5.6
-"
1 Source
Po
Operating and Storage Temperature Range
TJ, Tstll
1.0
0.008
Watts
mWf'C
-55to +150
'c
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
N-CHANNEL -
Thermal Resistance Junction to Ambient
ELECTRICAL CHARACTERISTICS
ENHANCEMENT
120
(TC = 25'C unless otherwise noted.)
I
Characteristic
•
1~
Vdc
Adc
Symbol
Min
Typ
Max
200
150
-
-
-
250
p.Adc
500
nAdc
-
-500
nAdc
2.0
-
4.0
Vdc
~
-
0.8
1.2
-
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 250 p.A)
Zero Gate Voltage Drain Current
V(BR)DSS
J
IRFD220
IRFD223
(VOSS = Rated VOSS, VGS = 0 V)
Gate-Body Leakage Current, Forward
(VGSF = 20 V)
Gate-Body Leakage Current, Reverse
(VGSR
lOSS
IGSSF
= -20 V)
IGSSR
Vdc
-
ON CHARACTERISTICS
Gate Threshold Voltage
(10 = 250 p.A, VDS = VGS)
VGS(th)
Static Drain-Source On-Resistance(l)
(VGS = 10 Vdc, 10 = 0.4 A)
rOS(on)
IRF0220
IRFD223
On-State Orain Current(l)
(VGS = 10 V, VOS = 5.0 V)
-
Adc
10(on)
0.8
0.7
-
9fs
0.5
-
-
Ciss
Coss
-
-
300
Cr55
-
-
BO
td(on)
-
IRF0220
IRF0223
Forward Transconductance(l)
(10 = 0.4 A, VOS = 5.0 V)
-
Ohms
mhos
CAPACITANCE
Input Capacitance
(VOS = 25 V, VGS = 0
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
600
pF
SWITCHING CHARACTERISTICS
Turn-On Oelay Time
Rise Time
(VDS = 0.5 V(BR)DSS,
10 = 0.4 A. Zo = 50 0)
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
-
40
-
60
-
100
-
60
-
2.0
1.B
Vdc
O.B
0.7
Adc
6.4
5.6
A
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS = 0)
IS = O.B A, IRF0220
IS = 0.7 A, IRFD223
VSD
-
-
Continuous Source Current, Body Oiode
IRF0220
IRF0223
IS
-
Pulsed Source Current, Body Diode
IRF0220
IRF0223
ISM
-
(IS = Rated IS, VGS = 0)
ton
Forward Turn-On Time
Reverse Recovery Time
I
I
trr
-
negligible
-
(1) Pulse Test: Pulse W,dth", 300 p.s, Outy Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-108
-
150
ns
-
IRFD9110
IRFD9112
MAXIMUM RATINGS
Rating
Symbol
Drain-Source Voltage
I
IRFD9110
IRFD9112
VOSS
-100
Vdc
VDGR
-100
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous TC
Pulsed
ID
IDM
Drain-Gate Voltage (RGS
=
20 kll)
CASE 370-01. STYLE 1
Unit
Adc
=
25°C
-0.7
-3.0
Total Power Dissipation
@TC = 25°C
Derate above 25°C
PD
Operating and Storage
Temperature Range
TJ, Tstg
-0.6
-2.5
I
1 Source
Watts
1.0
8.0
mWrC
-55 to +150
°c
120
°C/W
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
P-CHANNEL -
Thermal Resistance Junction to
Ambient (Free Air Operation)
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
V(BR)DSS
100
-
-
-
250
"Adc
-
500
nAdc
500
nAdc
VGS(th)
2.0
-
4.0
Vdc
-
-
-
1.2
1.6
Ohms
-
-
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, ID = -250 pA)
Zero Gate Voltage Drain Current
(VDSS
=
Rated VDSS, VGS
Gate-Body Leakage Current. Forward
(VGSF
Gate-Body Leakage Current, Reverse
(VGSR
=
0 V)
= -20 V)
= 20 V)
IDSS
IGSSF
IGSSR
-
Vdc
ON CHARACTERISTICS
Gate Threshold Voltage
OD = -250 "A, VDS
= VGS)
Static Drain-Source On-Resistance(l)
(VGS = -10Vdc,ID = -0.3A)
IRFD9110
IRFD9112
rDS(on)
On-State Drain Current(l)
(VGS = 10 V, VDS = -5.0 V)
IRFD9110
IRFD9112
ID(on)
0.7
0.6
9fs
0.6
Ciss
-
250
Crss
-
-
35
td(on)
-
td(off)
-
tf
-
-
30
tr
-
-5.5
-5.3
Vdc
-0.7
-0.6
Adc
-
-3.0
-2.5
A
Forward Transconductance(l)
OD = -0.3 A, VDS = -5.0 V)
-
-
Adc
mhos
CAPACITANCE
Input Capacitance
(VDS
Output Capacitance
=
-25 V, VGS
f = 1.0 MHz)
=
0
Reverse Transfer Capacitance
Coss
pF
100
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
(VDS = 0.5 V(BR)DSS,
ID = -0.3 A, Zo = 50ll)
Turn-Off Delay Time
Fall Time
ns
60
40
40
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS
=
0)
IS
IS
=
=
-0.7 A,IRFD9110
-0.6 A. IRFD9112
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
Os
=
VSD
IRFD9110
IRFD9112
IS
IRFD9110
IRFD9112
ISM
Rated IS, VGS
=
0)
-
-
-
negligible
ton
trr
-
(1) Pulse Test: Pulse Width", 300 "s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-109
-
120
ns
-
•
IRFD9120
IRFD9123
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Orain-Gate Voltage (RGS
= 20 kil)
Symbol
IRFD9120
IRFD9123
Unit
VOSS
100
60
Vdc
VOGR
100
60
Vdc
Gate-Source Voltage
VGS
Drain Current
Continuous TC
Pulsed
10
10M
CASE 370-01, STYLE 1
2 Drain
Vdc
±20
Adc
= 25°C
0.8
6.4
1.0
8.0
Total Power Oissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage
Temperature Range
TJ, Tstg
1.0
8.0
Watts
mWrC
-55 to +150
°c
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
P-CHANNEL -
120
Thermal Resistance Junction to
ENHANCEMENT
Ambient (Free Air Operation)
•
ELECTRICAL CHARACTERISTICS (Tc
=
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
60
-
-
-
-
250
"Adc
500
nAdc
-
500
nAdc
VGS(th)
2.0
-
4.0
Vdc
-
0.6
0.8
Ohms
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = O,ID = -250 pAl
Zero Gate Voltage Drain Current
IRF09120
IRFD9123
(VDSS
=
Rated VOSS, VGS
Gate-Body Leakage Current, Forward
(VGSF
Gate-Body Leakage Current, Reverse
(VGSR
= a V)
= -20 V)
= 20 V)
lOSS
IGSSF
IGSSR
Vdc
ON CHARACTERISTICS
Gate Threshold Voltage
(lD = -250 pA, VDS
=
VGS)
Static Drain-Source On-Resistance(l)
(VGS = -10 Vdc, 10 = -0.8 A)
IRFOS120
IRFDS123
rOS(on)
On-State Orain Current(l)
(VGS = 10 V, VDS = -5.0 V)
IRFOS120
IRFOS123
ID(on)
1.0
0.8
-
9f.
0.8
-
-
Ciss
-
-
450
Coss
Crss
-
-
100
-
-
100
Forward Transconductance(l)
(10 = -0.8 A, VOS = -5.0 V)
-
Adc
mhos
CAPACITANCE
Input Capacitance
(VDS
Output Capacitance
=
-25 V, VGS
f = 1.0 MHz)
=0
Reverse Transfer Capacitance
pF
350
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
Rise Time
td(off)
-
tf
-
IRFDS120
IRFOS123
VF
-
IRFDS120
IRFOS123
IS
IRFDS120
IRFD9123
ISM
(VOS = 0.5 V(BR)DSS,
ID = - 0.8 A, Zo = 50 il)
Turn-Off Delay Time
Fall Time
tr
50
ns
-
100
-
-
6.3
6.0
Vdc
-
1.0
0.8
Adc
-
8.0
6.4
A
100
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS = 0)
IS
IS
= -1.0 A,
= - 0.8 A.
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
(IS
=
Rated IS, VGS = 0)
-
-
negligible
ton
trr
-
(1) Pulse Test: Pulse Width", 300 "s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-110
150
ns
-
IRFE110
IRFE113
MAXIMUM RATINGS
Symbol
IRFE110
IRFE113
Unit
Drain-Source Voltage
Rating
VOSS
100
60
Vdc
Drain-Gate Voltage (RGS ~ 20 kfl)
VOGR
100
60
Vdc
Gate-Source Voltage
VGS
Drain Current
Continuous T C ~ 25°C
Pulsed
10
10M
±20
CASE 648-06
-
Vdc
Adc
Total Power Dissipation
@TC ~ 25°C
Watts
mWrC
1.0
B.O
Watt
mWrC
-55 to +150
°c
40 Total Package
125 Each FET
°CIW
Per
Device
Operating and Storage
Temperature Ranga
O.B
6.4
3.0
30
Po
Package
Derate above 25°C
1.0
B.O
TJ, Tstg
1
QUAD
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
N-CHANNEL -
Thermal Resistance Junction to
Ambient (Free Air Operation)
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
I
Characteristic
Typ
Symbol
Min
Max
Unit
V(BR)OSS
100
60
-
lOSS
-
-
250
"Adc
-
-
500
nAdc
-
500
nAdc
OFF CHARACTERISTICS EACH FET
Drain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 250 "A)
Zero Gate Voltage Drain Current
IRFE110
IRFE113
(VOSS ~ Rated VOSS, VGS ~ 0 V)
Gate-Body leakage Current, Forward
(VGSF ~ 20 V)
IGSSF
Gate-Body leakage Current, Reverse
(VGSR ~ -20 V)
IGSSR
-
Vdc
ON CHARACTERISTICS EACH FET
!LA, VOS
VGS(th)
2.0
-
4.0
Vdc
Static Drain-Source On-Resistance(1)
(VGS ~ 10 Vdc, 10 ~ O.B A)
IRFE110
IRFE113
rOS(on)
-
-
Ohms
-
0.6
O.B
On-State Drain Current(1)
(VGS ~ 10 V, VOS ~ 5.0 V)
IRFE110
IRFE113
10(on)
1.0
O.B
-
-
9fs
O.B
-
-
Coss
-
-
Crss
-
-
25
td(on)
-
20
td(off)
-
tf
-
-
20
1.0 A, IRFE110
O.B A, IRFE113
VF
-
-
2.5
2.0
Vdc
Continuous Source Current, Body Diode
IRFE110
IRFE113
IS
Adc
IRFE110
IRFE113
ISM
-
1.0
O.B
Pulsed Source Current, Body Diode
-
B.O
6.4
A
(Is ~ Rated IS, VGS ~ 0)
ton
(10 ~ 250
Gate Threshold Voltage
~ VGS)
Forward Transconductance(1)
(10 ~ O.B A, VOS ~ 5.0 V)
-
Adc
mhos
CAPACITANCE EACH FET
Input Capacitance
(VOS ~ 25 V, VGS ~ 0
f ~ 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
200
pF
100
SWITCHING CHARACTERISTICS EACH FET
Turn-On Delay Time
Rise Time
(VOS = 0.5 V(BR)OSS,
10 ~ O.B A, Zo ~ 50 fl)
Turn-Off Delay Time
Fall Time
tr
ns
25
25
SOURCE-DRAIN DIODE CHARACTERISTICS EACH FET
Diode Forward Voltage
(VGS ~ 0)
<>
Forward Turn-On Time
Reverse Recovery Time
I
I
IS
IS
~
~
trr
(1) Pulse Test: Pulse Width", 300 "s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-111
ns
negligible
-
100
-
•
IRFE9120
IRFE9123
MAXIMUM RATINGS
Rating
Orain-Source Voltage
Orain-Gate Voltage IRGS
= 20
kG)
Gate-Source Voltage
Orain Current
Continuous TC
Pulsed
Symbol
IRFE9120
IRFE9123
Unit
VOSS
100
60
Vdc
VOGR
100
60
Vdc
-
Vdc
±20
VGS
CASE 648-06
Adc
= 25°C
Total Power Oissipation
@TC = 25°C
Oerate above 25°C
3.0
30
Watts
mWFC
1.0
8.0
Watt
mWFC
-55to +150
°c
Po
Package
Per
Device
Operating and Storage
Temperature Range
0.8
6.4
1.0
8.0
10
10M
TJ, Tstg
1
QUAD
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
P-CHANNEL -
•
ENHANCEMENT
40 Total Package
125 Each FET
Thermal Resistance Junction to
Ambient IFree Air Operation)
ELECTRICAL CHARACTERISTICS ITC = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
VIBR)OSS
100
60
Typ
Max
Unit
OFF CHARACTERISTICS EACH FET
Orain-Source Breakdown Voltage
IVGS = 0,10 = -250/LA)
Zero Gate Voltage Orain Current
IRFE9120
IRFE9123
IVoss
=
Rated VOSS, VGS
Gate-Body Leakage Current, Forward
IVGSF
Gate-Body Leakage Current, Reverse
IVGSR
=
=
= 0 V)
loSS
20 V)
IGSSF
-20 V)
IGSSR
-
-
-
Vdc
250
/L Adc
500
nAdc
500
nAdc
ON CHARACTERISTICS EACH FET
Gate Threshold Voltage
=
= VGS)
VGSlth)
2.0
Static Orain-Source On-Resistancell)
IVGS = -10 Vdc, 10 = -0.8 A)
IRFE9120
IRFE9123
rOSlon)
-
On-State Orain Currentll)
(VGS = -10 V, VOS = 5.0 V)
IRFE9120
IRFE9123
1010n)
1.0
0.8
9fs
0.8
Ciss
(10
-250 /LA, VOS
-
-
4.0
Vdc
0.6
0.8
Ohms
-
Adc
-
-
-
-
450
-
100
tr
-
tdloff)
-
tf
-
-
-1.0 A, IRFE9120
- 0.8 A, IRFE9123
VF
IRFE9120
IRFE9123
IS
IRFE9120
IRFE9123
ISM
-
Forward Transconductancell)
(10 = -0.8 A, VOS = 5.0 V)
mhos
CAPACITANCE EACH FET
Input Capacitance
IVOS
Output Capacitance
=
f
-25 V, VGS
1.0 MHz)
=
=0
Reverse Transfer Capacitance
Coss
Crss
pF
350
SWITCHING CHARACTERISTICS EACH FET
Turn-On Oelay Time
tdlon)
Rise Time
IVOS = 0.5 VIBR)OSS,
10 = -0.8 A. Zo = 50!l)
Turn-Off Oelay Time
Fall Time
50
ns
100
100
100
SOURCE-DRAIN DIODE CHARACTERISTICS EACH FET
Oiode Forward Voltage
IVGS
= 0)
IS
IS
=
=
Continuous Source Current, Body Oiode
Pulsed Source Current. Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
(IS
=
Rated IS, VGS
= 0)
-
11) Pulse Test: Pulse Width", 300 /Ls, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-112
-
6.3
6.0
Vdc
1.0
0.8
Adc
8.0
6.4
A
negligible
ton
trr
-
150
ns
-
IRFFll0
IRFFl13
MAXIMUM RATINGS
Rating
Symbol
IRFFll0
IRFF113
Unit
VDSS
100
60
Vdc
VDGR
100
60
Vdc
Drain-Source Voltage
Drain-Gate Voltage (RGS
~
1.0 mfi)
Gate-Source Voltage
±20
VGS
Drain Current
Continuous
Pulsed
CASE 79-03, STYLE 6
TO-39 (TO-205AFI
Vdc
Adc
~
Total Power Dissipation @ TC
Derate above 25QC
25QC
3.0
12
3.5
14
ID
IDM
PD
15
0.12
Watts
WfC
TJ, Tstg
-55 to 150
·C
Thermal Resistance Junction to Case
ROJC
8.33
·CIW
Thermal Resistance Junction to Ambient
ROJA
175
·CIW
TL
300
·C
Operating and Storage Temperature Range
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
ELECTRICAL CHARACTERISTICS (TC
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
~ 25·C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)DSS
100
60
-
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS
~
0, ID
~
IRFFll0
IRFFl13
250,..,A)
Zero Gate Voltage Drain Current (VDS
~
~
Rated VDSS, VGS
Gate-Body Leakage Current, Forward (VGS
~
20 Vdc, VDS
~
Gate-Body Leakage Current, Reverse (VGS
~
-20 Vdc, VDS
0)
0)
~
0)
Vdc
IDSS
-
250
,..Adc
IGSSF
-
100
nAdc
IGSSR
-
-100
nAdc
ON CHARACTERISTICS'
~
VGS, ID ~ 250,..,A)
VGS(th)
2.0
4.0
Vdc
Static Drain-Source On-Resistance
(VGS ~ 10 Vdc, ID ~ 1.5 Adc)
IRFFll0
IRFFl13
rDS(on)
-
0.6
0.8
Ohm
On-State Drain Current
(VGS ~ 10 Vdc, VDS
IRFFll0
IRFFl13
ID(on)
3.5
3.0
9fs
1.0
-
Ciss
-
200
20
tf
-
IRFFll0
VSO
-
2.5
Vdc
IRFFl13
VSO
-
2.0
Vdc
ton
-
Negligible
ns
200 (Typ)
ns
Gate Threshold Voltage (VDS
~
15 V)
Forward Transconductance (lD
~
1.5
A. VDS
~
15 V)
A
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS
Output Capacitance
~
25 V, VGS
f ~ 1.0 MHz)
~
0,
Reverse Transfer Capacitance
Coss
erss
pF
100
25
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
td(on)
(VOO = 0.5 Rated VOSS,
10 ~ 1.5 A,
Rgen ~ 50 ohms)
Rise Time
Turn-Off Oelay Time
Fall Time
tr
td(off)
ns
25
25
20
SOURCE-DRAIN DIOOE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
(IS
Reverse Recovery Time
~
Rated 10(on),
VGS ~ 0)
trr
'Pulse Test: Pulse Width", 300 ,..,s, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-113
•
IRFF120
IRFF123
MAXIMUM RATINGS
Symbol
IRFF120
IRFF123
Unit
Drain-Source Voltage
Rating
VOSS
100
60
Vdc
Drain-Gate Voltage (RGS = 1.0 mil)
VOGR
100
60
Vdc
Gate-Source Voltage
±20
VGS
Drain Current
Continuous
Pulsed
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
€I
Vdc
6.0
24
10
10M
Total Power Dissipation @ TC = 25°C
Derate above 25°C
5.0
20
Po
20
0.16
Watts
Wf'C
TJ, Tsto
-55 to 150
°c
Thermal Resistance Junction to Case
RoJC
6.25
°CIW
Thermal Resistance Junction to Ambient
ROJA
175
°CIW
TL
300
°C
Operating and Storage Temperature Range
3 Droin
//[ G~
,~
Adc
21
, Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
100
60
-
Max
Unit
-
Vdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 250 pAl
IRFF120
IRFF123
lOSS
-
250
/LAde
Gate-Body Leakage Current, Forward (VGS
IGSSF
-
100
nAdc
Gate-Body Leakage Current, Reverse
IGSSR
-
-100
nAdc
= Rated VOSS, VGS = 0)
= 20 Vdc, VOS = 0)
(VGS = 20 Vdc, VOS = 0)
Zero Gate Voltage Drain Current (VOS
ON CHARACTERISTICS'
= VGS, 10 = 250/LA)
VGS(th)
2.0
4.0
Vdc
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 3.0 Adc)
IRFF120
IRFF123
rOS(on)
-
0.3
0.4
Ohm
On-State Drain Current
(VGS = 10 V, VOS = 15 V)
IRFF120
IRFF123
10(on)
6.0
5.0
-
Qfs
1.5
-
mhos
pF
Gate Threshold Voltage (VOS
Forward Transconductance (10
= 3.0 A, VOS =
15 V)
A
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS = 0,
f = 1.0 MHz)
Reverse Transfer Capacitance
Ciss
-
600
Coss
-
400
Crss
-
100
td(on)
-
40
tr
-
70
SWITCHING CHARACTERISnCS'
Turn-On Delay Time
(VDD = 0.5 Rated VDSS,
ID = 3.0 A,
Rgen = 50 ohms)
Rise Time
Turn-Off Delay Time
tf
-
IRFF120
VSD
-
IRFF123
VSO
(IS = Rated 10(on),
VGS = 0)
Fall Time
td(off)
ns
100
70
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery TIme
Vdc
Vdc
ton
Negligible
ns
trr
-
200 (Typ)
ns
'Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-114
2.5
2.3
-
IRFF210
IRFF213
MAXIMUM RATINGS
Rating
Orain-Source Voltage
Orain-Gate Voltage (RGS
~
1.0 mn)
Symbol
IRFF210
IRFF213
Unit
VOSS
200
150
Vdc
VOGR
200
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Iii1
Vdc
150
±20
VGS
CASE 79-03
TO-39 (TO-205AF)
Vdc
~
Total Power Oissipation @ TC
Oerate above 25°C
25°C
1.8
7.5
2.2
9.0
10
10M
Po
15
0.12
Watts
WI"C
TJ, Tstg
-55 to 150
°c
Thermal Resistance Junction to Case
R8JC
8.33
0c/w
Thermal Resistance Junction to Ambient
RajA
175
°CIW
TL
300
°C
Operating and Storage Temperature Range
3 Drain
//[ G~
,~
Adc
21
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)DSS
200
150
-
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 250 ,..A)
IRFF210
IRFF213
Zero Gate Voltage Orain Current (VOS
~
~
Rated VDSS, VGS
Gate-Body Leakage Current, Forward (VGS
~
20 Vdc, VOS
~
Gate-Body Leakage Current, Reverse (VGS
~
- 20 Vdc, VOS
0)
0)
~
0)
-
Vdc
lOSS
-
250
IGSSF
-
100
nAdc
IGSSR
-
-100
nAdc
,..Adc
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS
~
VGS, 10
~
250,..A)
Static Orain-Source On-Resistance
(VGS ~ 10 Vdc, 10 ~ 1.25 A)
Forward Transconductance (10
~
IRFF210
IRFF213
1.25 A, VOS
~
5.0 V)
VGS(th)
2.0
4.0
Vdc
rOS(on)
-
1.5
2.4
Ohm
9fs
0.8
-
mhos
Ciss
-
150
DYNAMIC CHARACTERISTICS
Input Capacitance
~
(VOS
Output Capacitance
f
~
25 V, VGS
1.0 MHz)
~
0,
Reverse Transfer Capacitance
Coss
Crss
pF
80
25
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
td(on)
(VOO
~
0.5 Rated VOSS,
10 ~ 1.25 A.
Rgen ~ 50 ohms)
Rise Time
Turn-Off Oelay Time
Fall Time
tr
td(off)
tf
-
15
ns
25
15
15
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
IRFF210
VSO
IRFF213
VSO
(IS ~ Rated 10(on),
VGS ~ 0)
ton
trr
'Pulse Test: Pulse Width", 300,..s, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-115
-
2.0
Vdc
1.8
Vdc
Negligible
ns
200 (Typ)
ns
•
IRFF220
IRFF223
MAXIMUM RATINGS
Symbol
IRFF220
IRFF223
Unit
Orain-Source Voltage
Rating
VOSS
200
150
Vdc
Orain-Gate Voltage (RGS = 1.0 mn)
VOGR
200
150
Vdc
Gate-Source Voltage
±20
VGS
CASE 79-03, STYLE 6
TO-39 (TO-205AF)
tf)
Vdc
Adc
Drain Current
Continuous
3.5
14
10
10M
Pulsed
Total Power Oissipation @ TC = 25°C
Oerate above 25°C
20
0.16
Watts
WFC
TJ, Tst!!
-55 to 150
°c
Thermal Resistance Junction to Case
ROJC
6.25
°CIW
Thermal Resistance Junction to. Ambient
ROJA
175
°CIW
TL
300
°C
Operating and Storage Temperature Range
//[ ,rfS1
G~
3.0
12
Po
3 Drain
21
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for lOs
ELECTRICAL CHARACTERISTICS (TC
•
=
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
200
150
Max
Unit
-
Vdc
250
J.LAdc
100
nAdc
-100
nAdc
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 250 J.LA)
IRFF220
IRFF223
= Rated VOSS, VGS = 0)
= 20 Vdc, VOS = 0)
(VGS = - 20 Vdc, VOS = 0)
Zero Gate Voltage Orain Current (VOS
lOSS
Gate-Body Leakage Current, Forward (VGS
IGSSF
Gate-Body Leakage Current, Reverse
IGSSR
-
-
ON CHARACTERISTICS'
= VGS, 10 = 250 J.LA)
VGS(th)
2.0
4.0
Vdc
Static Orain-Source On-Resistance
(VGS = 10 Vdc, 10 = 2.0 Adc)
IRFF220
IRFF223
rOS(on)
-
0.8
1.2
Ohm
On-State Orain Current
(VGS = 10 Vdc, VOS
IRFF220
IRFF223
10(on)
3.5
3.0
9fs
1.5
Gate Threshold Voltage (VOS
= 5.0 Vdc)
Forward Transconductance (10 = 2.0 A, VOS = 5.0 V)
-
mhos
pF
A
DYNAMIC CHARACTERISTICS
Ciss
-
600
Coss
-
300
Crss
-
80
60
td(off)
-
100
tf
-
60
IRFF220
VSO
Vdc
VSO
-
2.0
IRFF223
1.8
Vdc
(IS = Rated 10(on),
VGS = 0)
ton
Negligible
ns
350 (Typ)
ns
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS = 0,
f = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
td(on)
(VOO = 0.5 Rated V(BR)OSS,
10 = 2.0 A,
Rgen = 50 ohms)
Rise Time
Turn-Off Oelay Time
Fall Time
tr
40
ns
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Ti me
trr
'Pulse Test: Pulse Width", 300 J.Ls, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-116
-
IRFF230
IRFF233
MAXIMUM RATINGS
Rating
Symbol
IRFF230
IRFF233
Unit
Drain-Source Voltage
VOSS
200
150
Vdc
Drain-Gate Voltage (RGS ~ 1.0 mil)
VOGR
200
150
Vdc
Gate-Source Voltage
±20
VGS
CASE 79-03
TO-39 (TO-205AF)
Vdc
Drain Current
Adc
Continuous
Pulsed
5.5
22
10
10M
Total Power Dissipation @ TC
Derate above 25°C
~
25°C
Operating and Storage Temperature Range
4.5
18
Po
25
0.2
Watts
Wf'C
TJ, Tstg
-55to 150
°C
TMOSFET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
5.0
Maximum Lead Temperature
1.6 mm from Case for lOs
300
ELECTRICAL CHARACTERISTICS (TC
N-CHANNEL -
ENHANCEMENT
~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)OSS
200
150
-
-
250
/L Adc
-
100
nAdc
-100
nAdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 250 pAl
IRFF230
IRFF233
Zero Gate Voltage Drain Current (VOS ~ Rated VOSS, VGS ~ 0)
lOSS
Gate-Body Leakage Current, Forward (VGS ~ 20 Vdc, VOS ~ 0)
IGSSF
Gate-Body Leakage Current, Reverse (VGS
~
-20 Vdc, VOS
~
0)
IGSSR
Vdc
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS ~ VGS, 10 ~ 250/LA)
Static Drain-Source On-Resistance
(VGS ~ 10 Vdc, 10 ~ 3.0 A)
Forward Transconductance (10
~
IRFF230
IRFF233
3.0 A, VOS
~
5.0 V)
VGS(th)
2.0
4.0
Vdc
rOS(on)
-
0.4
0.6
Ohm
9fs
2.5
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS ~ 25 V, VGS ~ 0,
f ~ 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
800
Coss
-
450
Crss
-
150
td(on)
-
30
-
2.0
Vdc
1.8
Vdc
Negligible
ns
450 (Typ)
ns
pF
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
Rise Time
(VOO = 90 V, 10 ~ 3.0 A,
Rgen ~ 50 ohms)
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
ns
50
50
40
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
'Pulse Test: Pulse Width
~
300/Ls, Duty Cycle
~
IRFF230
VSO
IRFF233
VSO
(IS ~ Rated 10(on),
VGS ~ 0)
ton
t"
2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-117
•
IRFF330
IRFF333
MAXIMUM RATINGS
Rating
Symbol
IRFF330
IRFF333
Unit
VOSS
400
350
Vdc
VOGR
400
350
Vdc
Drain-Source Voltage
Drain-Gate Voltage (RGS
=
1.0 mn)
Gate-Source Voltage
±20
VGS
Drain Current
Continuous
Pulsed
CASE 79-03
TO-39 (TO-205AF)
Vdc
Adc
=
Total Power ~issipation @ TC
Derate above 25'C
25°C
Operating and Storage Temperature Range
3.0
12
3.5
14
10
10M
Po
25
0.2
Watts
TJ, Tstg
-55to150
°c
wrc
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
5.0
Maximum Lead Temperature
1.6 mm from Case for 10 s
300
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
•
Characteristic
Symbol
Min
Max
V(BR)OSS
400
350
lOSS
-
-
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 250 !LA)
IRFF330
IRFF333
= Rated VOSS, VGS = 0)
= 20 Vdc, VOS = 0)
(VGS = - 20 Vdc, VOS = 0)
Zero Gate Voltage Drain Current (VOS
Gate-Body Leakage Current, Forward (VGS
IGSSF
Gate-Body Leakage Current, Reverse
IGSSR
-
Vdc
250
!LAdc
-
100
nAdc
100
nAdc
ON CHARACTERISTICS'
= VGS,
=
VGS(th)
2.0
4.0
Vdc
Static Orain-Source On-Resistance
(VGS = 10 Vdc, 10 = 2.0 Adc)
IRFF330
IRFF333
rOS(on)
-
-
1.0
1.5
Ohm
On-State Orain Current
(VGS = 10 V, VOS = 5.0 V)
IRFF330
IRFF333
10(on)
3.5
3.0
-
-
A
9fs
2.0
-
mhos
Ciss
-
900
Gate Threshold Voltage (VOS
Forward Transconductance (10
10
250 !LA)
= 2.0 A. VOS =
5.0 V)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS =
f = 1.0 MHz)
0,
Coss
Crss
Reverse Transfer Capacitance
-
pF
300
80
SWITCHING CHARACTERISTICS'
td(off)
-
tf
-
35
IRFF330
VSO
-
1.6
Vdc
IRFF333
VSO
-
1.5
Vdc
ton
-
Negligible
ns
trr
-
600 (Typ)
ns
Turn-On Oelay Time
td(on)
Rise Time
(VOO = 175 V, 10 = 2.0 A,
Rgen = 50 ohms)
Turn-Off Oelay Time
Fall Time
tr
30
ns
35
55
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
(Is
Reverse Recovery Time
= Rated 10(on),
VGS = 0)
'Pulse Test: Pulse Width", 300 !LS, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-118
IRFF430
IRFF433
CASE 79-03
TO-39 (TO-205AF)
MAXIMUM RATINGS
Rating
Symbol
IRFF430
IRFF433
Unit
Orain-Source Voltage
VOSS
500
450
Vdc
Orain-Gate Voltage (RGS = 1.0 mO)
VOGR
500
450
Vdc
Gate-Source Voltage
Orain Current
Continuous
Pulsed
Vdc
:t20
VGS
Adc
2_75
11
10
10M
Total Power ~issipation @TC = 25°C
Oerate above 25°C
Operating and Storage Temperature Range
2.25
9.0
Po
25
0.2
Watts
Wf'C
TJ, Tstg
-55to 150
°c
1 Source
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
5.0
Maximum lead Temperature
300
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
1.6 mm from Case for 10 s
ELECTRICAL CHARACTERISTICS (TC
=
25°C unless otherwise noted_)
Characteristic
Symbol
Min
V(BR)OSS
500
450
-
-
250
pAdc
100
nAdc
-100
nAdc
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 250 pAl
IRFF430
IRFF433
= Rated VOSS, VGS = 0)
= 20 Vdc, VOS = 0)
(VGS = -20 Vdc, VOS = 0)
Zero Gate Voltage Orain Current (VOS
lOSS
Gate-Body Leakage Current, Forward (VGS
IGSSF
Gate-Body Leakage Current, Reverse
IGSSR
Vdc
-
ON CHARACTERISTICS'
= VGS,
=
VGS(th)
2_0
4_0
Vdc
Static Orain-Source On-Resistance
(VGS = 10 Vdc, 10 = 1.5 Adc)
IRFF430
IRFF433
rOS(on)
-
1.5
Ohm
On-State Orain Current
(VGS = 10 Vdc, VOS
IRFF430
IRFF433
10(on)
2_75
2_25
9fs
1.5
Cjss
-
BOO
-
30
Gate Threshold Voltage (VOS
=
10
250 pAl
5_0 V)
Forward Transconductance (VOS
=
5.0 Vdc, 10
=
1_5 A)
2_0
-
A
mhos
OYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
f
= 25 V, VGS =
= 1_0 MHz)
0,
Reverse Transfer Capacitance
Coss
Crss
pF
200
60
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
td(on)
Rise Time
(VOO = 225 V, 10 = 1.5 A,
Rgen = 50 ohms)
Turn-Off Oelay Time
Fall Time
tr
td(off)
tf
ns
30
55
30
SOURCE-DRAIN DIODE CHARACTERISTICS'
IRFF430
VSO
-
1.4
Vdc
IRFF433
VSO
-
1.3
Vdc
(IS = Rated 10(on),
VGS = 0)
ton
Negligible
ns
BOO (Typ)
ns
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
trr
'Pulse Test: Pulse Width", 300 I-'S, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-119
-
•
Jl07, Jl08
Jl09,Jll0
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
~~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Gate Voltage
VDG
-25
Vdc
Gate-Source Voltage
VGS
-25
Vdc
Rating
1 Drain
Gate Current
IG
10
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
310
2.B2
mW
mWfC
135
°C
Junction Temperature Range
TJ
Storage Channel Temperature Range
Tstg
-65 to
+ 150
JFET
GENERAL-PURPOSE
TRANSISTOR
N-CHANNEL -
DEPLETION
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
-25
-
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(VDS = 0, IG = -10 ILAdc)
Gate Reverse Current
(VGS = -15 Vdc, VDS
(VGS = -15 Vdc, VDS
= 0)
= 0, TA =
IGSS
100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
-
-
-
nAdc
-3.0
-200
Vdc
VGS(off)
-
-4.5
-10
-6.0
-4.0
100
BO
40
10
-
-
-
-
-0.5
-3.0
-2.0
-0.5
J107
J108
J109
J110
Vdc
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(1)
(VDS = 15, VGS = 0)
IDSS
J107
J108
J109
J110
Drain-Source On-Resistance
(VDS < 0.1 V, VGS = 0 V)
rDS(on)
J107
J108
J109
J110
-
mAdc
-
ohms
-
-
B.O
B.O
12
18
-
-
B5
pF
-
-
SMALL-SIGNAL CHARACTERISTICS
Drain Gate + Source Gate On-Capacitance
(VDS = 0 Vdc, VGS = 0, f = 1.0 MHz)
Cdg(on)
Drain Gate Off-Capacitance
(VDS = 0 Vdc, VGS = -10 V, f
15
pF
1.0 MHz)
-
-
=
Cdg(off)
Source Gate Off-Capacitance
(VDS = 0 Vdc, VGS = -10 V, f
Csg(off)
-
-
15
pF
=
1.0 MHz)
+
C~gLon)
(1) Pulse Duration 300
p,S,
Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-120
J107,J108,J109,J110
FIGURE 2 - COMMON SOURCE REVERSE FEEDBACK
CAPACITANCE versus GATE-SOURCE VOLTAGE
FIGURE 1 - COMMON SOURCE INPUT
CAPACITANCE versus GATE-SOURCE VOLTAGE
100
~
100
~
o~
~
0 1\ \
z
u
1\
VDS = 0 V
\ ..;
' " 5.0V 1.
r\.
40
'< ........10V
~
«
u
>-
~
;:;
£!
u
'" "
20
\
~ 1--.,........
-4.0
,
t---
.....
-8.0
-12
VOS = OV
~J.OV
I~
FIGURE 3 -
FIGURE 4 -
ON-RESISTANCE versus GATE-SOURCE
CUTOFF VOLTAGE
z
tJj
Hi
90
,
12
U
""
::>
0
170
"?
z
:;;:
I--- VGS(off): VDS = 5.0 V
ID = 1.0 pA
""0
i
>-
~
'DS(on): VDS '" 0.1 V
VGS = OV -
r---..... t-....
60
a 50
~40
-
cg
§
30
20
10
-
-1.0V
VGS
1/
'/
240
1210
I
V/
80
JV
60
V
40
IV
20
2.0
270
I
I 0.50V-
I
III
z>-
OV_
VGS
V
«
o
12
300
180
.9
10
VGS(off) = - 4.0 V
200
~
8.0
VOS. DRAIN-SOURCE VOLTAGE (VOLTS)
VGS(off) = - 3.0 V
a:z 100
~
1.25V-
2.0
-8.0
VGS - OV_
0.25V-
VGS(off). GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
FIGURE 5 -
•
OUTPUT CHARACTERISTIC
..-
V
80
'"
~
0
w
-20
-16
VGS(off) = - 2.0 V
100
u
-12
VGS. GATE-SOURCE VOLTAGE (VOLTS)
U> 16
"'"w
Q
-8.0
-4.0
-20
-16
VGS. GATE-SOURCE VOLTAGE (VOLTS)
16
18
20
J107,J108,J109,J110
FIGURE 7 - OUTPUT CHARACTERISTIC
VGS(off) = - 5.0 V
400
/'
360
I
//
;;: 320
.§" 280
!z
~
z
~V
200
~ 160
'"
.9120
0.5 V
-1.0V
V/ ......
240
a
VGS - OV
,/
~ I-'
1.5
......
2.0V2.5V-
V/
V
&-'f"'"
40
rv r80
3.0V
j
2.0
~
3.5 V
I
4.0
6.0
8.0
10
12
14
16
18
20
VDS, DRAIN·SOURCE VOLTAGE (VOLTS)
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-122
Jill
Jl12
Jl13
CASE 29·04, STYLE 5
TO·92 (TO·226AA)
~~".
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Gate Voltage
VDG
-35
Vdc
Gate-Source Voltage
Vdc
Rating
VGS
-35
Gate Current
IG
50
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.68
mW
mW!'C
300
°C
Lead Temperature
TL
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS
(TA
=
-55 to
+ 150
"
23
1 Drain
JFET
CHOPPER TRANSISTOR
N-CHANNEL - DEPLETION
°C
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
35
-
Vdc
IGSS
-
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0/loA)
Gate Reverse Cu rrent
(VGS = -15V)
Gate Source Cutoff Voltage
(VOS = 5.0 V, 10 = 1.0 /loA)
Drain-Cutoff Current
(VOS = 5.0 V, VGS
-3.0
-1.0
-0.5
10 V)
nA
V
VGS(off)
Jlll
J112
J113
10(off)
= -
-1.0
-10
-5.0
-3.0
-
1.0
20
5.0
2.0
-
-
30
50
100
-
28
pF
5.0
pF
5.0
pF
nA
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current*
(VOS = 15 V)
lOSS
Jlll
J112
J113
Static Drain-Source On Resistance
(VOS = 0.1 V)
rOS(on)
Jlll
J112
J113
Drain Gate and Source Gate On-Capacitance
(VOS = VGS = 0, f = 1.0 MHz)
Cdg(on)
mA
Ohms
+
Csg(on)
Ora", Gate Off-Capacitance
(VGS = -10 V, f = 1.0 MHz)
Cdg(off)
Source Gate Off-Capacitance
(VGS = -10 V, f = 1.0 MHz)
Csg(off)
*Pulse W,dth
= 300 p,s, Duty Cycle = 3.0%.
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
6·123
-
•
J174
J175
J176
J177
CASE 29-04, STYLE 30
TO-92 (TO-226AA)
2 Ga'.
,.:~
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
30
Vdc
Drain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
Gate Current
IG
50
mA
Total Device ~issipation @ TA = 25'C
Derate above 25'C
Po
350
2.8
mW
mW/"C
Tsto
-65 to + 150
'C
Storage Temperature Range
/
".
3
1 Drain
JFET
CHOPPER TRANSISTOR
P-CHANNEL - DEPLETION
Refer to MPF970 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise
noted.)
Characteristic
Symbol
Min
V(BR)GSS
30
-
Vdc
IGSS
-
1.0
nA
5.0
3.0
1.0
0.8
10
6.0
4.0
2.5
-2.0
-7.0
-2.0
-1.5
-100
-60
-25
-20
-
85
125
250
300
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 ILA)
Gate Reverse Current
(VGS = 20 Volts)
Gate Source Cutoff Voltage
(VOS = -15 V.lo = -10 nA)
Vdc
VGS(off)
J174
J175
J176
JI77
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = -15V)
Static Drain-Source On Resistance
(VOS" -0.1 Volt)
'Pulse Width
=
mA
lOSS'
J174
J175
J176
JI77
rOS(on)
J174
J175
J176
JI77
300 JLS. Duty Cycle .. 3.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-124
n
J201
J202
J203
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
40
Vdc
Drain-Gate Voltage
VDG
40
Vdc
Gate-Source Voltage
VGS
40
Vdc
IG
50
mA
Po
310
2.82
mW
mWrC
Tstg
-65to +150
°c
Gate Current
Total Device Dissipation @ TA
Derate above 25°C
3~
/
MAXIMUM RATINGS
=
25°C
Storage Temperature Range
,,
Gate
1·
23
1 Drain
JFET
LOW FREQUENCY/LOW NOISE
N-CHANNEL -
DEPLETION
Refer to 2N4220 for graphs•
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-40
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 !LA)
Gate Reverse Current
(VGS = -20 V)
Gate Source Cutoff Voltage
(VDS = 20 V, 10 = 10 nA)
IGSS
-
-100
pA
Vdc
VGS(off)
J201
J202
J203
Vdc
-0.3
-0.8
-2.0
-1.5
-4.0
-10.0
0.2
0.9
4.0
1.0
4.5
20.0
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = 20 V)
mA
lOSS'
J201
J202
J203
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance
(V OS = 20 V, 1= 1.0 kHz)
/Lmhos
IVlsl'
J201
J202
J203
'Pulse Width", 2.0 ms.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-125
500
1000
1500
-
•
J270
J271
CASE 29-04, STYLE 30
TO-92 (TO-226AA)
I
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Orain-Source Voltage
VOS
30
Vdc
Orain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
Gate Current
IG
50
mA
Total Oevice Oissipation @ TA = 25°C
Oerate ab\?ve 25°C
Po
360
3.27
mWrC
-65to +150
°c
Storage Temperature Range
TstQ
2 Gat.
~:~
" ..
3
1 Dram
JFET
CHOPPER TRANSISTOR
mW
P-CHANNEL -
OEPLETION
Refer to MPF970 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
-
Vdc
-
200
pA
0.5
1.5
2.0
4.5
6000
8000
15000
18000
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 pAl
Gate Reverse Cu rrent
(VGS = 20 Volts)
IGSS
Gate Source Cutoff Voltage
(VOS = -15 V, 10 = -1.0 nA)
Vdc
VGS(off)
J270
J271
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = -15V)
J270
J271
SMALL·SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = -15 V, f = 1.0 kHz)
Output Admittance
(VOS = -15V,f
=
1.0 kHz)
Input Capacitance
(VOS = -15 V, f
=
1.0 MHz)
"mhos
IYfsl
J270
J271
IYosl
Reverse Transfer Capacitance
(VOS = -15 V, f = 1.0 MHz)
200
500
Ciss
32
pF
Crss
-
8.0
pF
'Pulse Width", 2.0 ms.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-126
"mhos
-
J270
J271
J300
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
~~
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDG
-25
Vdc
Gate Current
IG
10
rnA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
3.5
mW
mWrC
Lead Tern peratu re
(1/16" from Case for 10 Seconds)
lL
300
°c
Junction Temperature Range
TJ
-55to +150
°c
Storage Temperature Range
TstQ
-55to +150
°c
Drain-Gate Voltage
1 Drain
JFET
HIGH FREQUENCY AMPLIFIER
N-CHANNEL '-- DEPLETION
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-25
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 pA, VDS = 0)
Gate Reverse Current
(VGS = -15V,VDS = 0)
IGSS
-
-
Vdc
500
pA
VGS(off)
-1.0
-6.0
Vdc
IDSS
6.0
30
rnA
VGS(f)
-
1.0
Vdc
Forward Transfer Admittance
(VOS = 10 V, 10 = 5.0 rnA, f = 1.0 kHz)
IYfsl
4500
9000
J.'mhos
Output Admittance
(VOS = 10 V, 10 = 5.0 rnA, f = 1.0 kHz)
IYosl
-
200
J.'mhos
Input Capacitance
(VOS = 10 V, 10 = 5.0 rnA. f = 1.0 MHz)
Ciss
-
5.5
pF
Reverse Transfer Capacitance
(VOS = 10 V, 10 = 5.0 rnA, f = 1.0 MHz)
Crss
-
1.7
pF
Gate Source Cutoff Voltage
(VDS = 10 V, ID = 1.0 rnA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = 10 V, VGS = 0)
Gate-Source Forward Voltage
(VOS = 0, IG = 1.0 rnA)
SMALL-SIGNAL CHARACTERISTICS
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-127
•
J304
J30S
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
,~~
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Gate Voltage
VOG
-30
Vdc
Gate-Source Voltage
VGS
-30
Vdc
IG
10
mA
Po
350
3.5
mW
mWrC
TL
300
"c
TJ, Tstg
-55 to +150
"c
Rating
Gate Current
Total Oevice Oissipation @ TA
Oerate above 25"C
~
25"C
Lead Temperature
(1/16" from Case for 10 Seconds)
Operating and Storage Junction
Temperature Range
•
1 Drain
JFET
HIGH FREQUENCY
AMPLIFIER
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA ~ 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
-
Vdc
IGSS
-
100
pA
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG ~ 1.0 J£A, VOS ~ 0)
Gate Reverse Current
(VGS ~ -20 V, VOS
~
0)
Gate Source Cutoff Voltage
(VDS ~ 15 V, 10 ~ 1.0 nA)
Vdc
VGS(off)
-2.0
-0.5
J304
J305
-6.0
-3.0
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS ~ 15 V, VGS ~ 0)
J304
J305
SMALL-SIGNAL CHARACTERISTICS
Output Admittance
(VOS ~ 15 V, VGS
IYosl
~
0, f
~
1.0 kHz)
Forward Transconductance
(VOS ~ 15 V, VGS ~ 0, f
~
1.0 kHz)
-
50
Re(Yfs)
J304
J305
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-128
/Lmhos
/Lmhos
4500
3000
7500
-
J308
J309
J310
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
MAXIMUM RATINGS
Rating
,
Symbol
Value
Unit
Orain-Source Voltage
VOS
25
Vdc
l'
Gate-Source Voltage
VGS
25
Vdc
23
Forward Gate Current
IGF
10
mAde
Po
350
3.5
mW
mW/"C
Junction Temperature Range
TJ
-55 to + 125
"C
Storage Temperature Range
Tstg
-55 to +150
"C
Total Oevice Oissipation @ TA
Oerate above 25"C
3~
,
=
25"C
Gat~
1 Drain
JFET
VHF/UHF AMPLIFIER
N-CHANNEL -
DEPLETION
Refer to U308 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-25
Typ
Max
Unit
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 pA, VOS = 0)
Gate Reverse Current
(VGS = - 15 V, VOS
(VGS = -15 V, VOS
IGSS
= 0, TA = 25"C)
= 0, TA = + 125"C)
Gate Source Cutoff Voltage
(VOS = 10 V, 10 = 1.0 nA)
-
-1.0
-1.0
-1.0
-1.0
-2.0
-
-6.5
-4.0
-6.5
12
12
24
-
60
30
60
-
1.0
-
nA
pA
Vdc
VGS(off)
J308
J309
J310
-
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(l)
(VOS = 10 V, VGS = 0)
lOSS
J30S
J309
J310
Gate-Source Forward Voltage
(VOS = 0, IG = 1.0 mAl
VGS(f)
-
mA
Vdc
SMALL-SIGNAL CHARACTERISTICS
Common-Source Input Conductance
(VOS = 10 V, 10 = 10 mA. f = 100 MHz)
Re(Yis)
-
0.7
0.7
0.5
Re(yos)
-
0.25
Gpg
-
16
Common-Source Forward Transconductance
(VOS = 10 V, 10 = 10 mA. I = 100 MHz)
Re(Yfs)
-
12
-
Common-Gate Input Conductance
(VOS = 10 V, 10 = 10 mA. I = 100 MHz)
Re(Yig)
-
12
-
J308
J309
J310
Common-Source Output Conductance
(VOS = 10 V, 10 = 10 mA, f = 100 MHz)
Common-Gate Power Gain
(VOS = 10 V, 10 = 10 mA, f
=
100 MHz)
Common-Gate Forward Transconductance
(VOS = 10 V, 10 = 10 mA, f = 1.0 kHz)
Common-Gate Output Conductance
(VOS = 10 V, 10 = 10 mA. I = 1.0 kHz)
9ls
J308
J309
J310
8000
10000
8000
gos
J308
J309
J310
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-129
-
mmhos
mmhos
dB
mmhos
mmhos
/Lmhos
-
20000
20000
18000
-
200
150
200
/Lmhos
•
J308,J309,J310
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Symbol
Characteristic
Common-Gate Forward Transconductance
(VOS = 10 V, 10 = 10 rnA. 1= 1.0 kHz)
Common-Gate Output Conductance
(VOS = 10 V, 10 = 10 rnA. 1= 1.0 kHz)
gIg
J30S
J309
J310
Min
-
Typ
-
Unit
!£mhos
150
100
150
-
1.S
2.5
pF
5.0
pF
13000
13000
12000
gog
J30S
J309
J310
Max
Gate-Drain Capacitance
(VOS = 0, VGS = -10 V, I = 1.0 MHz)
Cgd
-
Gate-Source Capacitance
(VOS = 0, VGS = -10 V, 1= 1.0 MHz)
Cgs
-
4.3
Noise Figure
(VOS = 10 V, 10 = 10 rnA. 1= 450 MHz)
NF
-
1.5
Equivalent Short-Circuit Input Noise Voltage
(VOS = 10 V, 10 = 10 rnA, I = 100 Hz)
en
-
10
!£mhos
FUNCTIONAL CHARACTERISTICS
(1) Pulse Test: Pulse WIdth"" 300 !£S, Duty Cycle"" 3.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-130
-
dB
nV/v'Hi
JF1033B
JF1033S
JF1033Y
CASE 29-04, STYLE 5
TO-92 (TO·226AA)
2 Source
"~-@
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
20
Vdc
Gate-Source Voltage
VGS
25
Vdc
10
20
rnA
Drain Current
Forward Gate Current
Total Device Dissipation @ TA
=
25°C
IGF
10
rnA
Po
310
2.82
mW
mwrc
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to
+ 150
1 Drain
JFET
HIGH FREQUENCY AMPLIFIER
N-CHANNEL DEPLETION
°c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.!
Symbol
Min
Max
Unit
Gate-Source Breakdown Voltage
(lG = -10 !LA!
V(BR!GSS
-25
-
Vdc
Drain-Source Breakdown Voltage
(10 = 10 !LA)
V(BR)OGO
20
-
Vdc
Gate Reverse Current
(VGS = -10 V, VOS = 0)
IGSS
-
Gate Source Cutoff Voltage
(VOS = 10 V, 10 = 10 !LA!
VGS(off)
Characteristic
OFF CHARACTERISTICS
-100
nA
-1.0
-8.0
Vdc
2.5
5.0
10.0
6.0
12.0
20.0
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = 10 V, VGS = 0)
mA
lOSS
JF1033Y
JF1033B
JF1033S
SMALL-SIGNAL CHARACTERISTICS
Forward Transconductance
(VOS = 10 V, VGS = 0, f = 1.0 kHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 10 V, VGS = 0, f = 100 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-131
•
MFE120
MFE121
MFE122
CASE 20·03, STYLE 9
TO·72 (TO·206AF)
I""
MAXIMUM RATINGS
Rating
Symbol
Value
VOS
+25
Vde
Drain Current
10
30
mAde
Total Oevice Oissipation @ TA = 25"C
Oerate above 25"C
Po
300
1.7
mW
mWfC
TJ, Tstg
-65to +175
"C
Orain-Source Voltage
Operating and Storage Junction
Temperature Range
•
Unit
lOrain
~~=~
Gate 1
3
2
Gate
Case
DUAL·GATE MOSFET
VHF AMPLIFIER
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
V(BR)OSX
25
-
-
Vde
Gate 1-Source Breakdown Voltage
(lG1 = ± 10 pAdc, VG2S = 0)
V(BR)G1S0
±7.0
-
±20
Vdc
Gate 2-Source Breakdown Voltage
(lG2 = ±10 pAde, VG2S = 0)
V(BR)G2S0
±7.0
-
±20
Vdc
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Orain-Souree Breakdown Voltage
(10 = 100 pAde, Vs = 0, VG1S
=
-4.0 V, VG2S
Gate 1 Leakage Current
(VG1S = +6.0 Vde, VG2S
= 0, VOS = 0)
Gate 2 Leakage Current
(VG2S = +6.0 Vde, VG1S
= 0, VOS = 0)
Gate 1 to Source Cutoff Voltage
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10
Gate 2 to Source Cutoff Voltage
(VOS = 15 Vde, VG1S = 0,10
=
+ 4.0 V)
= 200 pAdc)
IG1SS
-
-
20
nAde
IG2SS
-
-
20
nAdc
VG1S(off)
-
-
-4.0
Vde
VG2S(off)
-
-
-4.0
Vdc
2.0
5.0
2.0
7.0
10
9.0
18
30
20
8000
10,000
-
18,000
20,000
4.5
4.5
7.0
6.0
= 200 pAde)
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = 15 Vdc, VG1S = 0, VG2S
mAde
lOSS
= 4.0 Vde)
MFE120
MFE121
MFE122
SMALL-8IGNAL CHARACTERISTICS
Forward Transfer Admittance (Gate 1 to Orain)
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 10 mAdc, f = 1.0 kHz)
MFE120,22
MFE121
Input Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = lOSS, f = 1.0 MHz)
MFE120,22
MFE121
IVfsl
Ciss
Reverse Transfer Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAdc, f = 1.0 MHz)
Output Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = lOSS, f = 1.0 MHz)
Crss
Coss
MFE120,22
MFE121
pF
-
0.023
-
2.5
2.5
-
pF
pF
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
6·132
I'mhos
4.0
3.5
MFE120, MFE121, MFE122
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS
NF
Noise Figure
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAde, Zs is optimized for NF)
(f = 105 MHz - Figure 1)
(f = 60 MHz - Figure 3)
(f = 200 MHz - Figure 3)
-
MFE120
MFE121
MFE121
2.9
2.6
2.6
-
5.0
5.0
5.0
Gps
Common Source Power Gain
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAde, Zs is optimized for NF)
(f = 105 MHz - Figure 11
(f = 60 MHz - Figure 3)
(f = 200 MHz - Figure 3)
MFE120
MFE121
MFE121
-
Level of Unwanted Signal for 1.0% Cross Modulation
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 6.0 mAde)
Common-Source Conversion Power Gain (Gate 1 Injection, Figure 2)
(VOS = 15 Vdc, VG2S = 4.0 Vdc, Local
Oscillator Voltage = 925 mVrms)
(Signal Frequency = 60 MHz, Local Oscillator
Frequency = 104 MHz)
MFE122
(Signal Frequency = 200 MHz, Local Oscillator
Frequency = 244 MHz)
MFE122
FIGURE 1 -
dB
dB
17
20
17
19.6
27.8
18.6
-
100
-
Gc
dB
15
16.5
12
13.3
-
60, 105 AND 200 MHz POWER GAIN AND NOISE FIGURE TEST CIRCUIT
+lSV
150 k
0.11'F
82 k
1
181'H
)~
10 k
87k
L1
t(
r-~
60MHz
105MHz
=
200 MHz
=
L1
0.33 I'H
16 AWG 6 112 Turns,
1" Long De
16 AWG, 3 112 Turns,
0.7" Long, 0.2 De
L2
0.471'H
= 16 AWG 5 114 Turns,
1" long, 7116" De
= 16 AWG, 4 112 Turns,
0.65" Long, 0.2" De
All Feedthrough Capacitors 1000 pf.
All Variable Capacitors JOHANSON JMC2951, 3.0-15 pF
______ __
~
~=-~~~500HM
OUTPUT
270
FIGURE 2 -
0.11'F
60 AND 200 MHz CONVERSION GAIN TEST CIRCUIT
r
LO
+24
56
IF
44 MHz
330 k
10~~~ ~"(""4..JVVV\_~'-.
~
, Vrms
56
O.OO1I'F
RF
8~~~0 >-+-+---tt"'---t---1r--ir+":;"10:::0=k-1r:::"'-'
L2
60 MHz
200 MHz
L3
15 Turns =25 Enameled
on MILLER 4500 1 Core
15 Turns = 26 Enameled
on MILLER 4500 1 Core
L1
10 Turns = 22 Enameled
on MILLER 4500 4 Core
3 112 Turns = 18.114"
De. 112" Long
4 Turns
=
L4
20 Enameled
on Sure Core as l3
4 Turns = 26 Enameled
on Sure Core as l3
112" Long
All Feedthrough Capacitors 1000 pf.
All Variable Capacitors JOHANSON JMC2951, 3.0-15 pF
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-133
mV
•
MFE120, MFE121, MFE122
FIGURE 3 - 60 AND 200 MHz CONVERSION POWER GAIN
VDD
.001
---,-----------~
From
Source500
10 k
H
o
560 k
001
~
001
001
= .
1
270
0-20 pF
To 500
Load
=
L1 2% T #18. %" diameter center tapped
l2 31/2 T #18, 5/'6" diameter tapped 1hT from cold end
C == ILF unless otherwise specified
•
COMMON-SOURCE ADMITT~NCE PARAMETERS
(V DS = 15 Vde, V G2S = 4.0 V.de, ID = 6.0 mAde)
FIGURE 4 -INPUT ADMITTANCE
FIGURE 5 - REVERSE TRANSFER ADMITTANCE
1.4
7.0
0.03 5
1.2
6.0
0.03 0
/'
-bi. / ,
8
/'
6
/
/
./
4.0
/
V
0.2
0
30
40
-
f-
~
/'
w
~
3
2.0
1
.O!
~
.-
w
~ ~
/gis
~
200
/-b
/'
0.Q1 5
~ 0.01 0
0
30
300
40
1
~
e
7.0
14
3
1If.
z
12
::>
co
8
11
'"w~
10
~
....
:i:
~
9.0
-
8.0
7.030
./
./
.........
6.0
60
o.7
~
5
3.0
~
4
/
./
fu
'"
bos/ ,
3.0 ~
L
3
;;1
r'
2,0 ~
2
~
1
j
o
1,0 ~
100
300
3.5
6
w
bfs
i,.;'
70
200
z
0
40
S
5.0 ~
4 ,0
/'
......
70
100
f. FREUUENCY (MHz)
~
/'
~
i1
-
-gn
50
FIGURE 7 - OUTPUT ADMITTANCE
FIGURE 6 - FORWARD TRANSFER ADMITTANCE
S
"
V
--
0.005
1.0
70
100
f. FREQUENCY (MHz)
./
0.020
0
50
./
5
5
/'
200
300
30
f. FREQUENCY (MHz)
--
-r0-
40
50
,..,
-
70
100
f. FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-134
~
i..5
2.0
g
1.5
~
w
u
./
/'
./
2.5
gi
1.0
0.5
0
200
300
~
O!
.3
MFE120, MFE121, MFE122
FIGURE 8 - GAIN REDUCTION
FIGURE 9 - CONVERSION POWER GAIN
0
/"'_20
f
~
z
c
;::
..
g40
ffi
z
~ 80
18
.100 MHz V
I
60MHz
.
~1 4
/
~ 1
-2.0
2~
I<
z
.I
c
V
...-
200 MHz
10
E
8.0
~ 6, 0
-
-- ----
......
......
';e 4.0
co
III
8
z
o
+2.0
+4.0
VG2S. GATE 2 TO SOURCE VOLTAGE (VOLTSI
2.0
o
'"
/'
z
z
z
o
"8
14
3. 5'\.
;;:
~
0 3. 0
u
..
/
~
..:
1/
"
I~
~
2. 5
-
"-
~ 12
10
300
400
800
600
1.0 k
2.0 k
2.0
300
3.0 k
400
FIGURE 9 - GAIN REDUCTION
./
0
0
J
0
L
V
/
V
-3.0
4.0
~ 8.0
i!!i
t;
1/
I"
\
2
~
16
~
20
11
/'
......
"-
z
I'...
......
.......
24
-2.0
1.0
-1.0
GATE
2.0
3.0
4.0
5.0
6.0
........
---
28
40
60
70
90
100
30
50
80
20
LEVEL OF UNWANTED SIGNAL FOR 1.0% CROSS MODULATION (mV)
7.0
no GROUND VOLTAGE (VOLTS)
FIGURE 11 - 105 MHz POWER GAIN AND NOISE FIGURE TEST CIRCUIT
r-------~--------------------------_.--------~~--~+15V
r
47
120 k
0.001 I-'F
Ferrite Beads
L2
J
0.001 J.l.F
~
C4
RF Output
Zout= 50
n
C1
n
RFlnput
Zln""
50
3.0 k
1---"
V
/
V
50
2.0 k
1.0 k
FIGURE 10 - CROSS MODULATION
/
40
-
1/
/
RS. SOURCE IMPEDANCE 10HMS)
RS. SOURCE IMPEDANCE (OHMS)
0
800
600
V
/
/
Gl
C3
C2
1 0.001
I'F
The following component values are for a stern stability factor;; 2.0.
Ll.L2 126 nH PAUL SMITH CO. SK·13ST
4·~ Turn. (yellow)
C1 Nominal 7.0 pF AdjUsted for source impedance of
approximately 1000 n, JOHANSON JMC2961
C2 Nominal 4.0 pF AReO 402
C3 Nominal 13.73 pF AReO 403
C4 Nominal 4.36 pF JOHANSON JMC2951
All Oecoupling Capacitors are Ceramic Discs,
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-141
MFE140
FIGURE 12 - CONVERSION GAIN
0
.
~I-
z
8
In
15
-,-, 1
>
~S'
u.:!.1 6
"'z
~c
",to
00:
....
".'w
14
..,
12
~~
i!§
~
/'
Injection
/
17
Gala 2
Injection
7
IT
V
/
to
10
I-
VGatal
/
o
1.0
0.5
1.5
2.0
2.5
Vin(RMS), RMS INJECTION VOLTAGE (VOLTS)
•
FIGURE 13 - CONVERSION GAIN TEST CIRCUIT
Local Oscillator Injection
1'::$ 2.0 V for G2
~ 0.9 V for G1
f=110.7MHz
V1n(RMS)
r------------.--------------------------~~--------~---o+15V
120 k
150 k
47
0.0011'F
C2
L2
100 k
0.11'F
1_ 0.0011'F
~
Zout= 50n
2.0pF
fin
Zin = 50.n
f=100MHz
01
L1
C4
10 k
IF Output
f ~ 10.7 MHz
10.0011'F
L1 126 nH PAUL SMITH CO. SK-138-1
4-~ Turns (yellow)
L2 2. 73p.H High Unloaded Q
C1 JOHANSON JMC2951
C4,C5,C6 ARCO 402
"'For G1 injection, C2 I, changed to bypa.s G2 to ground and C3 I.
added to connect Gl to the inJection Input.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-142
MFE140
PRINTED CIRCUIT BOARD LAYOUT INFORMATION
FIGURE 14 - TEST FIXTURES
105 MHz POWER GAIN AND NOISE
FIGURE TEST CIRCUIT
"'if
O.OOII1F 47
O.OO1I1F
•
100 k O.OOII1F 120 k 82 k
100 MHz to 10.7 MHz CONVERSION
GAIN TEST CIRCUIT
Local Oscillator Input
Shown for G2 Injection (2)
0.00111
pF
RF Input
C4
OUT
270
0.00111 F C6
Notes:
1. C 1 is on the bottom side of the board.
2. For Gl Injoction. C2 is changed to bypass
G2 to ground and C3 is added to connect Gl to
the injection input. See Figura 13.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-143
IF Output
MFE823
CASE 22-03, STYLE 11
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
25
Vdc
Drain-Gate Voltage
VDG
±10
Vdc
Drain Current
ID
30
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
300
1.71
mW
mWrC
TJ, Tstg
-65 to +175
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RruA
584
°CIW
Thermal Resistance, Junction to Case
RruC
250
°CIW
Operating and Storage Junction
Temperature Range
1 Drain
~
3 Source
MOSFET
THERMAL CHARACTERISTICS
Characteristic
P-CHANNEL -
ENHANCEMENT
Refer to 2N4352 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)DSX
-25
Max
Unit
OFF CHARACTERISTICS
Drain-Source 8reakdown Voltage
(lD = -10 !LAdc, VGS = 0 Vdc)
-
Vdc
Zero-Gate-Voltage Drain Current
(VDS = -10 Vdc, VGS = 0)
IDSS
-
-20
nAdc
Gate Reverse Current
(VGS = -10 Vdc, VDS
IGSS
-
1.0
pAdc
-6.0
Vdc
= 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = -10 Vdc, ID = -10 !LAdc)
On-State Drain Current
(VDS = -10 Vdc, VGS
=
VGS(Th)
-2.0
ID(on)
-3.0
-
mAde
IVfsl
1000
-
/tmhos
-10 Vdc)
SMALL-8IGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = - 10 Vdc, ID = - 2.0 mAdc, f
=
1.0 kHz)
Input Capacitance
(VDS = -10 Vdc, VGS
-10 Vdc, f
=
1.0 MHz)
Reverse Transfer Capacitance
(VDS = -10 Vdc, VGS = -10 Vdc, f
=
1.0 MHz)
=
Ciss
-
6.0
pF
Crss
-
1.5
pF
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-144
MFE825
CASE 22-03, STYLE 2
TO-18 (TO-206AA)
3 Drain
,~
MAXIMUM RATINGS
Symbol
Value
Unit
Orain·Source Voltage
Rating
VOS
20
Vdc
Gate·Source Voltage
VGS
30
Vdc
10
25
mA
Po
200
1.6
mW
mWrC
TJ
150
°c
TJ, Tstg
-65to +150
°c
Drain Current
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Junction Temperature Range
Operating and Storage Junction
Temperature Range
, Source
MOSFET
N·CHANNEL - DEPLETION
Refer to 2N3796 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSX
20
IGSS
-
-1.0
pA
VGS
0
-2.0
Vdc
Max
Unit
OFF CHARACTERISTICS
Orain·Source Breakdown Voltage
(10 ~ 1.0 !lA, VGS ~ -8.0 V)
Gate Reverse Current
(VGS ~ -10 V, VOS
~
Gate Source Voltage
(10 ~ 1.0 !lA, VOS
2.0 V)
~
-
Vdc
0 V)
ON CHARACTERISTICS
Zero·Gat....Voltage Drain Current
(VOS ~ 10 V, VGS ~ 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS ~ 10 V, VGS ~ 0, f ~ 1.0 kHz)
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
6-145
II
MFE910
MPF910
,f/!
MFE910
CASE 79·02, STYLE 6
TO·39 (TO·205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
60
Vdc
Gate-Source Voltage
VGS
±15
Vdc
Drain Current -
10
10M
0.5
1.0
Adc
Total Device Dissipation @ TA = 25'C
Derate above 25'C
MPF91 0
Po
1.0
B.O
Watts
mWI'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
MFE910
Po
6.25
50
Watts
mWI'C
TJ. Tstg
-55 to +150
'c
Continuous(l)
Pulsed(2)
Operating and Storage Junction
Temperature Range
I
MPF910
CASE 29·03, STYLE 22
(TO·226AE)
TO·92
~
TMOS
SWITCHING
(1) The Power Dissipation ot the package may result in a lower continuous drain
current.
(2) Pulse Width .. 300 "... Duty Cycle .. 2.0%.
N-CHANNEL -
3 Drain
2 Source
ENHANCEMENT
Refer to 2N6659 for additional graphs.
•
ELECTRICAl CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Zero-Gate-Voltage Drain Current
(VOS = 40 V. VGS = 0)
lOSS
-
0.1
10
!'Adc
Gate Reverse Current
(VGS = 10 V. VOS = 0)
IGSS
-
0.01
10
nAdc
Characteristic
OFF CHARACTERISTICS
V(BR)OSS
60
90
-
Vdc
Gate Threshold Voltage
(VOS = VGS. 10 = 1.0 mAl
VGS(th)
0.3
1.5
2.5
Vdc
Drain-Source On-Voltage
(VGS = 10 V. 10 = 500 mAl
VOS(on)
-
2.5
Vdc
On-State Drain Current
(VOS = 25 V. VGS = 10 V)
10(on)
500
Forward Transconductance
(VOS = 15 V.IO = 500 mAl
gts
100
-
Drain-Source Breakdown Voltage
(VGS = O. 10 = 100 !'A)
ON CHARACTERISTICS
FIGURE 1 -
FIGURE Z -
VGSlthl NORMALIZED versu. TEMPERATURE
2.0
-
mA
mmhos
ON-REGION CHARACTERISTICS
2.0
-
VGS '= 10V
!i 1.6
!:i
§! 1.2
9o·
~j:
0.8
Vos = VGS
IO=I.OmA
-r--
-50
1.6
:--- r--
o
50
-100
~
0:
./
1.2
U
:::>
u
~ t::-
z:
~ 0.8
t--
0
i
90.4
150 ('C)
TJ. JUNCTION lCMPERATURE
-
I--
~
~
~~
-
~
~
~
1.0
2.0
3.0
Vos. DRAIN·TO-SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
6·146
.- --./
~
I-
~
:Ii' 0.4
o
ie
i--
9.0 V
""8oV'
...;-
-
7.0V
6.0V
5.0 V
4.0 V
4.0
MFE910, MPF910
FIGURE 3 2.0
if
~ 1.2
::>
u
1/
"2
:§ 0.4
100
VGS - OV
9.0V
J~
I
71
8.0 V
I
6.0 V
80
~
~ 60
z
7.0 V
z
~ 0.8
FIGURE 4 - CAPACITANCE versus DRAIN-TO-SOURCE VOLTAGE
VGS = 10 V
1.6
~
!z
OUTPUT CHARACTERISTICS
~
~
<5
40
It
~
1\
u
~
:
'I
'f/
5.0 V
20
4.0 V
10
20
30
VOS. ORAIN-TO-SOURCE VOLTAGE (VOLTS)
40
~
........
Ciss-
r-....
J.
Cos.
f',..
10
Crss
20
30
40
50
VOS. ORAIN-TO-SOURCE VOLTAGE (VOLTS)
60
I
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-147
MFE930
MFE960
MFE990
MAXIMUM RATINGS
Rating
Symbol MFE930 MFE960 MFE990
Drain-Source Voltage
VDS
35
Drain-Gate Voltage
VDG
35
Gate-Source Voltage
VGS
±30
Drain Current
Continuous(1 )
Pulsed(2)
10
10M
2.0
3.0
SO
90
SO
90
Unit
CASE 79-02, STYLE 6
TO-39 (TO-20SAD)
Vdc
Vdc
:~
Vdc
Adc
Total Device Dissipation
@TC=25°C
Derate above 25°C
"
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
5.25
50
Watts
mWI"C
-55to 150
°C
TMOS
SWITCHING
(1) The Power Dissipation of the package may result in a lower continuous drain
N-CHANNEL -
2 Source
ENHANCEMENT
current.
(2) Pulse Width", 300 p13, Duty Cycle'" 2.0%.
•
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
35
SO
90
-
-
IGSS
-
-
50
nAdc
lOSS
-
-
10
!
0.1
- 55
VGS = 0 V
160
f..-- r--
1.0
0
- 35
-15
+5.0
25
45
65
85
105
125
r:-....
..........
Crss
FIGURE & VOS
DUm
ie
1.8
z
1.5
u
1.2
I-
~
=>
TRANSFER CHARACTERISTIC
= 10V
FIGURE 6 -
,-
.-.-
z
~ 0.9
c
g 0.6
.§
0.3
/
./
1.0
2.0
3.0
V
4.0
~
~
50
OUTPUT CHARACTERISTIC
2.8
VGS = 10 V2.4
/'
/
20
Ci s
VDS, DRAIN·SOURCE VOLTAGE (VOLTS)
2.1
!
--
o
145
TJ, JUNCTION TEMPERATURE ('C)
2.4
CAPACITANCE VARIATION
200
180
9.0
ie
!
/
2.0
8.0
!z
~ 1.6
az
/
7.0
1.2
~
g 0.8
.§
/
6.0
5.0
0.4
4.0
5.0
6.0
7.0
8.0
9.0
10
5.0
10
20
30
40
VOS,oRAIN-SOURCE VOLTAGE (VOLTS)
VGS, GATE·SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-149
50
MFE930, MFE960, MFE990
FIGURE 7 - SATURATION CHARACTERISTIC
2.8
VGS = 10,Y-- f . 2.4
if
~
,.,.
Ii
8.0
...,.,
V/
~ 1.8
h
i3
7.0
~/
f'2
.....V./
~
... 0,8
6.0
~ ::,...-'
g
0,2
9.0
./'
2,0
IS 0,4
.....
5.0
!IV'
~
,....
0,6
4,0
1,0
2,0
3,0
4,0
6,0
VOS. ORAIN,SOURCE VOLTAGE (VOLTSI
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-150
MFE2004
MFE2005
MFE2006
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Souree Voltage
Rating
VOS
30
Vde
Orain-Gate Voltage
VOG
30
Vde
Gate-Source Voltage
VGS
30
Vde
Forward Gate Current
IGF
10
mAde
Po
1.8
10
Watts
mWf'C
Junction Temperature Range
TJ
-6S to + 17S
Storage Temperature Range
Tstg
-6S to +200
'c
'c
Total Oeviee Oissipation @ TC
Oerate above 2S'C
=
2S'C
3
!
2
,~.~"
lSoo~
1
JFET
CHOPPER
N-CHANNEL -
DEPLETION
Refer to 2N4091 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
2S'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
-
Vde
-
0.2
0.4
nAde
!lAde
-
0.2
0.4
nAde
!lAde
1.0
2.0
S.Q
6.0
8.0
10
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !lAde, VOS = 0)
Gate Reverse Current
(VGS = 20 Vde, VOS
(VGS = 20 Vde, VOS
= 0)
= 0, TA =
Orain Cutoff Current
(VOS = 20 Vde, VGS
(VOS = 20 Vde, VGS
=
=
Gate Source Voltage
(VOS = 20 Vde, 10
SO !lAde)
IGSS
1S0'C)
10(off)
12 Vde)
12 Vde, TA
=
1S0'C)
Vde
VGS
=
MFE2004
MFE200S
MFE2006
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current"
(VOS = 20 Vde, VGS = 0)
lOSS'
MFE2004
MFE200S
MFE2006
Gate-Source Forward Voltage
(lG = 1.0 mAde, VOS = 0)
8.0
1S
30
VGS(f)
Orain-Souree On-Voltage
(10 = 3.0 mAde, VGS = 0)
(10 = 6.0 mAde, VGS = 0)
(10 = 10 mAde, VGS = 0)
VOS(on)
MFE2004
MFE200S
MFE2006
Static Orain-Souree On Resistance
(10 = 1.0 mAde, VGS = 0)
rOS(on)
MFE2004
MFE200S
MFE2006
-
mAde
-
-
1.0
-
0.4
0.4
0.4
-
80
-
80
SO
30
-
16
Vde
Vde
Ohms
50
30
SMALL-SIGNAL CHARACTERISTICS
Static Orain-Souree "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
Input Capacitance
(VOS = 0, VGS
=
-12 Vde, f
=
rds(on)
MFE2004
MFE200S
MFE2006
Ciss
1.0 MHz)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-151
Ohms
pF
•
MFE2004, MFE2005, MFE2006
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Reverse Transfer Capacitance
(VOS = 0, VGS = 6.0 Vde, f = 1.0 MHz)
(VOS = 0, VGS = B.O Vde, f = 1.0 MHz)
(VOS = 0, VGS = 12 Vde, f = 1.0 MHz)
Crss
MFE2004
MFE2005
MFE2006
Min
Max
-
5.0
5.0
5.0
Unit
pF
SWITCHING CHARACTERISTICS
Turn-On Oelay Time
(VOO = 3.0 Vde, 10
(VOO = 3.0 Vde, 10
(VOO = 3.0 Vde, 10
td(on)
= 3.0 mAde, VGS = 0)
= 6.0 mAde, VGS = 0)
= 10 mAde, VGS = 0)
MFE2004
MFE2005
MFE2006
Rise Time
(VOO = 3.0 Vdc, 10
(VOO = 3.0 Vde, 10
(VOO = 3.0 Vde, 10
= 3.0 mAde, VGS = 0)
= 6.0 mAde, VGS = 0)
= 10 mAde, VGS = 0)
MFE2004
MFE2005
MFE2006
Turn-Off Time
(VOO = 3.0 Vde, 10
(VOO = 3.0 Vde, 10
(VOO = 3.0 Vde, 10
= 3.0 mAde, VGS(off) = 6.0 Vde)
= 6.0 mAde, VGS(off) = 8.0 Vde)
= 10 mAde, VGS(off) = 12 Vde)
MFE2004
MFE2005
MFE2006
-
tr
toff
'Pulse Test: Pulse Width.;; 300 p,s, Outy Cycle.;; 3.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-152
-
-
ns
20
15
10
ns
40
20
10
ns
80
60
40
MFE2010
MFE2011
MFE2012
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
~-.~"'"
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Drain-Gate Voltage
VOG
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
50
mAde
Po
1.8
10
Watt
mWrC
Junction Temperature Range
TJ
-65to +175
°c
Storage Temperature Range
Tstg
-65 to +200
°c
Rating
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
,I!
JFET
CHOPPER
N-CHANNEL -
, ".-
DEPLETION
Refer to J107 lor graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
25
-
Vdc
-
-
3.0
6.0
nAdc
/'Adc
-
3.0
6.0
nAdc
/'Adc
15
40
100
-
-
1.0
0.5
1.0
3.0
10
10
10
-
0.75
0.75
0.75
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 /'Adc, VOS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VOS = 0)
(VGS = 15 Vdc, VOS = 0, TA = 150°C)
IGSS
Drain Cutoff Current
(VOS = 15 Vdc, VGS = 12 Vdc)
(VOS = 15 Vdc, VGS = 12 Vdc, TA = 150°C)
10(off)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current"
(VOS = 20 Vdc, VGS = 0)
lOSS'
MFE2010
MFE2011
MFE2012
Gate-Source Forward Voltage
(lG = 1.0 mAde, VOS = 0)
VGS(I)
Gate-Source Voltage
(VOS = 15 Vdc, 10 = 1.0 /'Adc)
Drain-Source On-Voltage
(10 = 8.0 mAde, VGS = 0)
(10 = 15 mAde, VGS = 0)
(10 = 30 mAde, VGS = 0)
VOS(on)
MFE2010
MFE2011
MFE2012
Static Drain-Source On Resistance
(10 = 1.0 mAde, VGS = 0)
-
-
rOS(on)
MFE2010
i.!lFE2011
MFE2012
Vdc
Vdc
VGS
MFE2010
MFE2011
MFE2012
mAde
Vdc
Ohms
-
25
15
10
SMALL-SIGNAL CHARACTERISTICS
Static Drain-Source "ON" Resistance
(VGS = 0,10 = 0, I = 1.0 kHz)
rds(on)
MFE2010
MFE2011
MFE2012
Ohms
-
-
25
15
10
Input Capacitance
(VOS = 0, VGS = 10 Vdc, 1= 1.0 MHz)
Ciss
-
50
pF
Reverse Transler Capacitance
(VOS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Crss
-
20
pF
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-153
II
MFE2010, MFE2011, MFE2012
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Turn-On Oelay Time
td(on)
RiseTime
tr
Turn-Off Oelay Time
(VOO = 15 Vde, 10
(VOO = 15 Vde, 10
(VOO = 15 Vde, 10
= 8.0 mAde)
= 15 mAde)
= 30 mAde)
MFE2010
MFE2011
MFE2012
Fall Time
(VOO = 15 Vde, 10
(VOO = 15 Vde, 10
(VOO = 15 Vde, 10
= 8.0 mAde)
= 15 mAde)
= 30 mAde)
MFE2010
MFE2011
MFE2012
td(off)
-
10
ns
6.0
ns
-
35
20
12
-
75
45
25
ns
ns
tf
'Pulse Test: Pulse Width", 300 I'S, Outy Cycle'" 3.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-154
-
-
MFE9200
CASE 22-03, STYLE 12
TO-18 (TO-206AA)
3 Drain
~~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous (1)
Pulsed (2)
10
10M
400
800
Po
1.8
14.4
Rating
1 Source
mAde
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
=
-55 to
+ 150
TMOS
SWITCHING
Watts
mWrC
N-CHANNEL -
ENHANCEMENT
°c
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSX
200
-
IGSS
-
lOSS
Typ
Max
Unit
-
Vdc
0.01
50
nAdc
-
0.1
10
pAdc
1.0
-
4.0
Vdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0,10 = 10 pAl
Gate Reverse Current
(VGS = 15 Vdc, VOS = 0)
ON CHARACTERISTICS'
Zero-Gate-Voltage Drain Current
(VOS = 200 V, VGS = 0)
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 mAl
VGS(Th)
Drain-Source On-Voltage (VGS = 10 V)
(10 = 100 mAl
(10 = 250 rnA)
(10 = 500 rnA)
VOS(on)
Static Drain-Source On Resistance
(VGS = 10 Vdc)
(10 = 100 rnA)
(10 = 250 rnA)
(10 = 500 mAl
rOS(on)
-
IDlon)
0.6
1.60
6.0
6.4
Ohms
-
On-State Drain Current
Vdc
0.45
1.20
3.0
-
4.5
4.8
6.0
400
700
-
mA
(VOS = 25 V, VGS = 10 V)
-
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS = 25 V, VGS = O. f = 1.0 MHz)
Ciss
-
72
90
pF
Reverse Transler Capacitance
(VOS = 25 V, VGS = 0, 1= 1.0 MHz)
Crss
-
-
10
pF
Output Capacitance
(VOS = 25 V, VGS = O. 1= 1.0 MHz)
Coss
-
-
30
pF
9ls
200
400
-
Turn-On Time
See Figure 1
ton
-
6.0
15
ns
Turn-Off Time
See Figure 1
toff
-
6.0
15
ns
Forward Transconductance
(VOS = 25 V. 10 = 250 mAl
mmhos
SWITCHING CHARACTERISTICS
• Pulse Test: Pulse Width", 300 /Ls. Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-155
•
MFE9200
RESISTIVE SWITCHING
FIGURE 1 -
SWITCHING TEST CIRCUIT
FIGURE 2 -
SWITCHING WAVEFORMS
+25V
23
To Sampling Scope
Input
Vout
r:__20dB-1----Ef':-=,~..;5o n
Input Vin
FIGURE 3 -
II
FIGURE 4 -
ON VOLTAGE versus TEMPERATURE
10
200
~ 5.0
160
180
~
~
'"
~
- -
250mA
VGS - 10 V
2.0
~
:::>
~
~ 0.5
-
a
~O.2
VGS
120
~ 100
100 mA
f--
§ 80
+5.0
25
45
65
85
105
125
0
145
""-
"-
10
FIGURE 5 -
~
0.6
i
O. 5
/
a
gO.2
/
a'"z 0. 3
~ O.4
:5
§
c;;-
40
/
~ o. 5
s
I
~ O. 3
30
V
10 V
O.6
II
= 10 V
az o.4
0
o. 7
I
VGS
20
FIGURE 6 -
TRANSFER CHARACTERISTIC
0.7
Coss
VDS. DRAIN-SOURCE VOLTAGE (VOLTSI
TJ. JUNCTION TEMPERATURE (OCI
0.8
-
\
o\
- 55 - 35 -15
Ciss
\'
<560
40
o.1
= 0V
~14 0
~
r--
~ 1.0
S
>-
CAPACITANCE VARIATION
k""'
4.0
5.0
6.0
7.0
B.O
9.0
10
2.0
VGS. GATE-SOURCE VOLTAGE (VOLTSI
4.0
6,0
8.0
10
12
14
VDS. DRAIN-SOURCE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-156
16
18
20
MFE9200
FIGURE 7 - SATURATION CHARACTERISTIC
0.7
:f
~
!z
~
0.6
V
O. 5
a
0.4
§
0.2
./
./. ;.....--
z
~ 0.3
1:i
0.1
/
r-
..& V
'~
---
5.0 V
4.0 V
V
,
V ./'
V
3.0 V
".
1.0
2.0
3.0
4.0
Vos. DRAIN-50URCE VOLTAGE IVOLTS)
5.0
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-157
MFQ930C
MFQ960C
MFQ990C
CASE 632-02, STYLE 4
TO-116
MAXIMUM RATINGS
Symbol MFQ930C MFQ960C MFQ990C
Rating
1,7,8,14
Drain
Unit
Orain·Source Voltage
VOS
35
60
90
Vdc
Orain·Gate Voltage
VOG
35
60
90
Vdc
Gate·Source Voltage
VGS
_ 3'5"0'~2
Vdc
±30
Gate
Adc
Drain Current
Continuous (11
Pulsed (21
"
2.0
3.0
10
10M
Total Oevice Oissipation @ T A = 25"C
Oerate Above 25"C
Operating and Storage Junction
Temperature Range
2,6,9,13
Source
Each
Transistor
Total
Oevice
0.5
17.0
2.0
66.6
Po
TJ, Tstg
1
-55to +150
QUAD
DUAL-IN-LiNE
TMOS
Watts
mWrC
N-CHANNEL -
"C
ENHANCEMENT
Refer to MFE930 for graphs,
•
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.1
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Orain·Source Breakdown Voltage
(VGS = 0, 10 = 10 pAl
Gate Reverse Current
(VGS
=
V(BRIOSX
15 Vdc, VOS
-
Vdc
35
60
90
-
-
-
50
nAdc
-
10
pAdc
1.0
3.5
Vdc
MF0930C
MF0960C
MF0990C
-
0.4
0.6
0.6
0.7
0.8
1.0
-
0.9
1.2
1.2
1.4
1.7
2.0
2.2
2.8
2.8
3.0
3.5
4.0
-
-
0.9
1.2
1.2
1.4
1.7
2.0
1.0
2.0
-
Amps
-
60
70
pF
MF0930C
MF0960C
MF0990C
= 01
IGSS
-
-
ON CHARACTERISncs"
Zero·Gate·Voltage Orain Current
Gate Threshold Voltage
(10
=
Orain·Source On·Voltage (VGS
(10 = 0.5 AI
(VOS
=
Maximum Rating, VGS
1.0 mA, VOS
=
= 01
= VGSI
10 VI
VOS(onl
(10
=
1.0AI
MFQ930C
MF0960C
MF0990C
(10
= 2.0 AI
MF0930C
MF0960C
MF0990C
Static Drain-Source On Resistance
(VGS
=
10 Vdc, 10
=
On·State Orain Current
=
=
10 VI
Vdc
-
MF0930C
MF0960C
MFQ990C
25 V, VGS
-
rOS(onl
1.0 Adcl
(YOS
lOSS
VGS(Thl
10(onl
-
Ohms
SMALL·SIGNAL CHARACTERISTICS
Input Capacitance
(VOS = 25 V, VGS
Ciss
=
0, f
=
1.0 MHzl
13
18
pF
Coss
-
49
60
pF
9fs
200
380
-
mmhos
Reverse Transfer Capacitance
(YOS = 25 V, VGS = 0, f = 1.0 MHzl
Crss
Output Capacitance
(VOS = 25 V, VGS
=
0, f
=
1.0 MHzl
Forward Transconductance
(VOS = 25 V, 10 = 0.5 AI
SWITCHING CHARACTERISTICS
Turn·On Time
Turn·Off TIme
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-158
MPF89
CASE 29·03, STYLE 7
TO·92 (TO·226AE)
2 Drain
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDSS
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current -
ID
IDM
400
800
mAde
PD
0.6
4.8
Watts
mWfC
TJ, Tstg
-55to 150
°C
6JA
208
°CIW
Continuous (1)
Pulsed (2)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
1 Source
TMOS FET
TRANSISTOR
N-CHANNEL - ENHANCEMENT
Thermal Resistance Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
V(BR)DSS
Typ
Max
Unit
OFF CHARACTERISTICS
200
-
-
Zero Gate Voltage Drain Current
(VDS = 200 V, VGS = 0)
IDSS
-
0.1
60
p.Adc
Gate-Body leakage Cu rrent
(VGS = 20 V, VDS = 0)
IGSS
-
0.01
100
nAdc
-
2.7
Vdc
-
0.6
1.8
-
0.45
1.2
3.0
500
700
-
-
4.5
6.0
6.0
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.5 mAl
Vdc
ON CHARACTERISTICS'
Gate Threshold Voltage (lD = 1.0 mA, VDS = VGS)
VGS(th)
Drain-Source On-Voltage (VGS = 10 V)
(10 = 100 mAl
(lD = 300 mAl
(ID = 500 mAl
VDS(on)
On-State Drain Current
(VDS = 25 V, VGS = 10 V)
ID(on)
Static Drain-Source On-Resistance (VGS = 10 Vdc)
(lD = 150 mAl
(lD = 300 mAl
(lD = 500 mAl
rDS(on)
1.0
Vdc
-
mA
Ohms
-
6.0
-
9fs
140
400
-
mmhos
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss
-
72
-
pF
Output CapacitaAce
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Coss
-
15
-
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
-
2.8
-
pF
Forward Transconductance (VDS = 25 V, ID = 300 mAl
-
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS'
Turn-On Time (See Figure 1)
Turn-Off Time (See Figure 1)
(1) The Power Dissipation ofthe package may result in a lower continuous drain current.
(2) Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL·SIGNAL SEMICONDUCTORS
6·159
•
MPF102
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
,'~~.-
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
25
Vdc
Drain-Gate Voltage
VOG
25
Vdc
Gate-Source Voltage
23
1 Drain
VGS
-25
Vdc
JFET
Gate Cu rrent
IG
10
mAde
VHF AMPLIFIER
Total Device ~issipation @ TA = 25"C
Derate above 25"C
Po
200
2
mW
mWrC
Junction Temperature Range
TJ
125
"C
Storage Temperature Range
Tsto
-65 to +150
"C
N-CHANNEL -
DEPLETION
Refer to 2N4416 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-25
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -10 !lAde, VOS = 0)
Gate Reverse Cu rrent
(VGS = -15 Vdc, VOS = 0)
(VGS = -15 Vdc, VOS = 0, TA = 100"C)
IGSS
-
Vdc
-
-2.0
-2.0
nAdc
!lAde
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 2.0 nAdc)
VGS(off)
-
-8.0
Vdc
Gate Source Voltage
(VOS = 15 Vdc, 10 = 0.2 mAde)
VGS
-0.5
-7.5
Vdc
2000
1600
7500
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current"
(VOS = 15 Vdc, VGS = 0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance"
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)
(VOS = 15 Vdc, VGS = 0, I = 100 MHz)
IYlsl
Input Admittance
(VOS = 15 Vdc, VGS = 0, 1= 100 MHz)
Re(Yis)
Output Conductance
(VOS = 15 Vdc, VGS = 0, 1= 100 MHz)
Re(yos)
Input Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Ciss
Reverse Transler Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Crss
'Pulse Test: Pulse Width", 630 ms; Duty Cycle'" 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-160.
J£mhos
-
800
J£mhos
200
J£mhos
7.0
pF
3.0
pF
MPF256
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Drain
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
±30
Vdc
Drain-Gate Voltage
VOG
30
Vdc
Reverse Gate-Source Voltage
VGSR
30
Vdc
IG(f)
10
mAdc
Po
350
2.73
mW
mWfC
Forward Gate Current
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to
+ 150
1 Source
JFET
AMPLIFIER
N-CHANNEL -
DEPLETION
"C
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
25
-
-
Vdc
-
-
5.0
nAdc
0.5
-
7.5
Vdc
3.0
6.0
11
-
-
7.0
13
18
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 !lAdc, VOS = 0)
Gate Reverse Cu rrent
(VGS = 15 Vdc, VOS = 0)
IGSS
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 200 !lAde)
VGS(off)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = 15 Vdc, VGS = 0)
mAde
lOSS'
Red
Green
Violet
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)
IVfsl
6.0
-
-
mmhos
Input Capacitance
(VOS = 15 Vdc, 10 = 10 mAdc, 1= 1.0 MHz)
Ciss
-
3.0
-
pF
Reverse Transfer Capacitance
(VOS = 15 Vdc, 10 = 10 mAde, 1= 1.0 MHz)
Crss
-
1.2
-
pF
Output Capacitance
(VOS = 15 Vdc, 10 = 10 mAdc, 1= 1.0 kHz)
Coss
-
2.0
-
pF
-
-
-
2.0
4.0
20
12
-
-
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vdc, RS = 50 Ohms)
Common Source Power Gain
(VOS = 15 Vdc, RS = 50 Ohms)
NF
100 MHz
400 MHz
dB
Gps
100 MHz
400 MHz
dB
-
'To characterize these devices to narrower limits, the entire production lot is tested and divided into color-coded groups, with each color
dot representing an lOSS range.
When packaged lor shipment, the colors are randomlv selected and no specific color distribution is implied or guaranteed.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-161
•
MPF820
CASE 29·04, STYLE 5
TO·92 (TO·226AA)
2 Source
~~
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
Rating
VOS
25
Vdc
Orain-Gate Voltage
VOG
25
Vdc
Reverse Gate-Source Voltage
VGSR
25
Vdc
IG(I)
10
mAde
Po
625
5.0
mW
mWf'C
TJ, Tstg
-65to +150
'C
Forward Gate Current
Total Oevice Oissipation @ TA = 25'C
Oerate above 25'C
Operating and Storage Junction
Temperature Range
•
1 Drain
JFET
RF AMPLIFIER
N-CHANNEL - DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
V(·BR)GSS
25
Typ
Max
Unit
-
-
Vdc
5.0
nAdc
-
5.0
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 pAdc, VOS = 0)
VGS(off)
-
Forward Transler Admittance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)
iYfsi
-
20
Input Capacitance
(VOS = 15 Vdc, 10 = 10 mAde, 1= 1.0 MHz)
Ciss
-
15
Reverse Transler Capacitance
(VOS = 15 Vdc, 10 = 10 mAde, 1= 1.0 MHz)
Crss
Common-Gate Input Conductance
(VOS = 15 Vdc, 10 = 10 mAde, f = 100 MHz)
gig
Common-Gate Output Conductance
(VOS = 15 Vdc, 10 = 10 mAde, I = 100 MHz)
Gog
-
Common-Gate Forward Transadmittance
(VOS = 15 Vdc, 10 = 10 mAde, f = 100 MHz)
Ylg
Common-Gate Reverse Transadmittance
(VOS = 15 Vdc, 10 = 10 mAde, 1= 100 MHz)
Yrg
Output Capacitance
(VOS = 15 Vdc, 10 = 10 mAde, 1= 1.0 kHz)
Gate Reverse Current
(VGS = 15 Vdc, VOS = 0)
IGSS
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 200 pAdc)
ON CHARACTERISTICS
Zero-Gate-Voltage Orain
(VOS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
16
-
-
16
J.'mhos
-
18
-
mmhos
-
130
J.'mhos
Coss
-
3.5
-
pF
Noise Figure
(VOS = 15 Vdc, 10 = 10 mAde, See Figure 5)
NF
-
-
4.0
dB
Small-Signal Power Gain
(VOS = 15 Vdc, 10 = 10 mAde, See Figure 5)
Gpg
-
11
-
dB
3.5
mmhos
pF
pF
mmhos
FUNCTIONAL CHARACTERISTICS
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-162
MPF820
FIGURE 2- FORWARD TRANSADMITTANCE
FIGURE 1 - NOISE FIGURE
20
5.0
f = 100 MHz
4.0
'"=>
'"u:
3.0
0
....V
-
w
~
.5
2.0
z
z
u:
w
'"'~
.......-
:g
w
E
V
~
0
1
t-
~
7. 0
~
5.0
'""
~~
3.
~
~
V
t-
1.0
o
0.6
0.4
0.3
0.1
0.1
f= 1.0 kHz
]
l,..-
0.8
O~
2. 0
1.0
0.1
~
0.5
0.2
FIGURE 4 -OUTPUT AND REVERSE
TRANSFER CAPACITANCE
FIGURE 3 -INPUT CAPACITANCE
2. 0
~10MJ-
61"-.
2
........
t--..
t-....
0
--
2
r---
~
8
0
o
o
'"
1.6
"'I--..
I
f=1.0 MHZ-
~ ,I
"'
~rss
""-...
a
-1.0
-3.0
-4.0
o
4.0
~
'-
~oss
. . . r--
O. 4
-1.0
8.0
12
10, ORAIN CURRENT 1m A)
VGS, GATE·SOURCE VOLTAGE IVOLTS)
FIGURE 5 -100 MHz TEST CIRCUIT
1.0-18 pF
TUT
INPUT
RS=5011
3.0 pF
-~~ ~SU!~~~
,....::......--....- -.....- -....
1TURNS, #18 AWG
3116" 1.0., C. T.
3118"WINDING LENGTH
0.8-8.0 pF
r330PF r
330PF
BTURNS, #22 AWG
5132" 1.0., C. T.
O8 8 0
10pF ":" pF-' ":" 5/16"WINOINGLENGTH
1
-15 V
10
10, ORAIN CURRENT ImA)
RG. SOURCE RESISTANCE IKI LOHMS)
0
5.0
2.0
1.0
VG ADJUSTS FOR
10=10mA
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-163
16
a
MPF910
For Specifications, See MFE910 Data.
MPF930
MPF960
MPF990
MAXIMUM RATINGS
Rating
Symbol MPF930 MPF960 MPF990
Unit
Orain-Source Voltage
VOS
35
SO
SO
Vdc
Orain-Gate Voltage
VOG
35
SO
SO
Vdc
Gate-Source Voltage
VGS
Orain Current
Continuous (1)
Pulsed (2)
±30
CASE 29-03, STYLE 22
TO-22SAE
Vdc
3 Drain
~~
Adc
2.0
3.0
10
10M
Total Oevice Oissipation
@'TA ~ 25°C
Oerate above 25°C
Po
Operating and Storage Junction
Temperature Range
Thermal Resistance
1.0
8.0
Watts
mWf'C
TJ, Tstg
-55 to 150
°C
°JA
125
1 Source
TMOS
SWITCHING
°crw
(1) The Power Dissipation of the package may result in a lower continuous drain
N-CHANNEL -
current.
(2) Pulse Width", 300 ,..s, Outy Cycle", 2.0%.
ENHANCEMENT
Refer to MFE930 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 10 pA)
V(BR)OSX
MPFS30
MPFSSO
MPFSSO
(VGS ~ 15 Vdc, VOS ~ 0)
Gate Reverse Current
IGSS
-
-
Vdc
35
SO
SO
-
-
-
-
50
nAdc
-
ON CHARACTERISTICS'
Zero-Gate-Voltage Orain Current
Gate Threshold Voltage
Orain-Source On-Voltage (VGS ~ 10 V)
(10 ~ 0.5 A)
(10
110
~
~
1.0A)
2.0 A)
Static Orain-Source On Resistance
(VGS ~ 10 Vdc, 10 ~ 1.0 Adc)
On-State Orain Current
-
-
10
pAdc
1.0
-
3.5
Vdc
MPFS30
MPFSSO
MPFSSO
-
0.4
O.S
O.S
0.7
0.8
1.2
MPFS30
MPFSSO
MPFSSO
-
O.S
1.2
1.2
1.4
1.7
2.4
MPFS30
MPFSSO
MPFSSO
-
-
2.2
2.8
2.8
3.0
3.5
4.8
-
O.S
1.2
1.2
1.4
1.7
2.0
1.0
2.0
-
Ciss
-
SO
70
pF
Crss
-
13
18
pF
4S
SO
pF
200
380
-
mmhos
(VOS ~ Maximum Rating, VGS ~ 0)
(10 ~ 1.0 mA, VOS ~ VGS)
lOSS
VG~Th)
VOS(on)
-
-
rOS(on)
MPF930
MPFSSO
MPFSSO
(VOS ~ 25 V, VGS ~ 10 V)
10(on)
Vdc
Ohms
Amps
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS ~ 25 V, VGS ~ 0, I ~ 1.0 MHz)
Reverse Transfer Capacitance
Output Capacitance
(VOS ~ 25 V, VGS ~ 0, I ~ 1.0 MHz)
(VOS ~ 25 V, VGS ~ 0, f ~ 1.0 MHz)
Forward Transconductance
Coss
(VOS ~ 25 V, 10 ~ 0.5 A)
9ls
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
'Pulse Test: Pulse Width", 300
).LS,
Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-164
MPF970
MPF971
CASE 29-04, STYLE 5
TO-92 (T0-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Drain-Gate Voltage
VOG
30
Vdc
VGSR
30
Vdc
IG(I)
10
mAde
Po
350
2.8
mW
mWrC
TstQ
-65to +150
°c
Tchannel
-65to +150
°c
Reverse Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Storage Channel Temperature Range
Operating Temperature Range
JFET
SWITCHING
P-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
30
Typ
Max
Unit
-
-
Vdc
-
-
1.0
1.0
nAdc
pAdc
-
-
-
-
10
10
10
10
nAdc
pAdc
nAdc
pAdc
5.0
1.0
-
12
7.0
15
2.0
-
100
50
-
-
1.5
1.5
-
-
100
250
-
-
250
-
-
12
12
-
-
5.0
5.0
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 pAdc, VOS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VOS
(VGS = 15 Vdc, VOS
= 0)
= 0, TA =
Drain-Cutoff Current
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
= 12 Vdc)
= 12 Vdc, TA = 150°C)
= 7.0 Vdc)
= 7.0 Vdc, TA = 150°C)
IGSS
150°C)
10(off)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 10 nAdc)
MPF970
MPF970
MPF971
MPF971
-
-
Vdc
VGS(off)
MPF970
MPF971
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(l)
(VOS = 20 Vdc, VGS = 0)
lOSS
MPF970
MPF971
Drain-Source On-Voltage
(10 = 10 mAde, VGS = 0)
(10 = 1.5 mAdc, VGS = 0)
VOS(on)
Static Drain-Source On Resistance
(10 = 1.0 mAdc, VGS = 0)
rOS(on)
MPF970
MPF971
mAdc
Vdc
Ohms
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" Resistance
(VGS = 0,10 = 0, I = 1.0 kHz)
rds(on)
MPF970
MPF971
Input Capacitance
(VGS = 12 Vdc, VOS = 0, I = 1.0 MHz)
(VGS = 7.0 Vdc, VOS = 0, I = 1.0 MHz)
MPF970
MPF971
Reverse Transler Capacitance
(VGS = 12 Vdc, VOS = 0, 1= 1.0 MHz)
(VGS = 7.0 Vdc, VOS = 0, 1= 1.0 MHz)
MPF970
MPF971
Ciss
Crss
Ohms
pF
-
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-165
tOO
pF
•
MPF970, MPF971
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
2.0
3.0
5.0
5.0
-
9.0
68
15
80
-
3.5
5.0
8.0
10
-
13
88
25
120
Unit
SWITCHING CHARACTERISTICS (Sae Figura 6 RK = 0) (1)
Rise Time
(lO(on) = 10 mAde, VGS(oft) = 12 Vde)
(lOlon) = 1.5 mAde, VGSloft)= 7.0 Vde)
tr
Fall Time
(lO(on) = 10 mAde, VGS(oft) = 12 Vde)
(lO(on) = 1.5 mAde, VGS(oft) = 7.0 Vde)
MPF970
MPF971
Turn-On Time
(lO(on) = 10 mAde, VGS(oft) = 12 Vde)
(lO(on) = 1.5 mAde, VGS(oft) = 7.0 Vde)
MPF970
MPF971
Turn-Off Time
(lO(on) = 10 mAde, VGS(oft) = 12 Vde)
(lOlonl = 1.5 mAde, VGSloft) = 7.0 Vde)
MPF970
MPF971
ns
-
MPF970
MPF971
tf
ns
ns
ton
toft
ns
(1) Pulse Test: Pulse Width .. 100 IJ-S, Duty Cycle .. 1.0%.
•
FIGURE 1 - EFFECT OF lOSS ON DRAIN-SOURCE
RESISTANCE AND GATE-50URCE VOLTAGE
200
..~
160
"-'ZOO
I
1\
\
W'"
",0
16
\
120
~~
OW
'§rI:
40
~
I........
-~
10
~~
~@VGS=O
80
~~
~
>
1
I'....
",W
0'"
W
o
\.
0",
",-
20
_l
I
Tchannel'" 25°C -
20
30
"'0
::~ r40
~~
,../
8.0 ~
<
'"
'"
.,;
4.0 >
50
70
60
o
lOSS, ZERO·GATE VOLTAGE DRAIN CURRENT (rnA)
FIGURE 2 - TURN-ON DELAY TIME
FIGURE 3 - RISE TIME
100
100
l
W
!
5
70
60
0
0
~
0
:
7. 0
6.0
~
t
~
.......
........ ~
0.6
7. 0
5. 0
-
RK = o I--
3. 0
2.0
'I
MPF970
MPF971
MPF970
MPF970-
I
0.3
I0
'"
.:
!!j
MPF970
0.2
"'
;:
MPF971
........MPF971
........ ::'"
W
r--... ........
RK -0
I'-l
20
VGS(off) -12 V (MPF970)
7.0 V(MPF971)
R • RO'
!'...
0
l
!'... MPF9 1
3.0
2.0
.0
RK - Ro'
Tchannal = 250C'~
70
60
Tehann,' = 250C ~
VGS(off)' 12 V (MPF970)7.0 V MPF971 i-
I.0
0.7
2.0 3.0
5.0 7.0
1.0
10, DRAIN CURRENT (rnA)
10
20
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10, DRAIN CURRENT (rnA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-166
10
20
MPF970, MPF971
FIGURE 4 - TURN·OFF OELAY TIME
FIGURE 5 - FALL TIME
500
500
Tehan"el '" 250~t:±
VGS(off)= 12 V (MPF970)
7. V(MPF971l
300
RK = RO'
~ 200['..
0-"""'::
II
r-.....
r-....
20 0
-;;;
100
,.
0
50
.s
w
0
0
I""-.: >.. V
MPF971
i=
MPF970
r-...
0
25
fi.( RK = iO'~'.± Tehannel"
VGS(off)= 12 V (MPF97o)
CF=F=
0
~
1'0.....
1'0.
~
30
'"
20
I'....
MPF971
7,0 V (MPF9711
IX:'
~
i'-
.......
~
RK=OP'
7.0
5.0
30 0"
RK=OP
MPF97o- f--
"
"
.......
,...
......
10
7, 0
5.0
0.2 0.3
0.5
0.7
1.0
2.0
5.0 7.0
3.0
10
20
0,2 0.3
0.5
~.7
1.0
2,0
3.0
5.0
7.0
10
20
10, ORAIN CURRENT (mA)
10, ORAIN CURRENT (mA)
NOTE 1
The switching characteristics shown above were measured using a
FIGURE 6 - SWITCHING TIME TEST CIRCUIT
test circuit similar to Figure 6. At the beginning of the switching
-VO~
interval, the gate voltage is at Gate Supply Voltage (+VGGI. The
Drain-Source Voltage (VOS) is slightly lower than Drain Supply
RO
Voltage ('VODI due to the voltage divider. Thus Reverse Transfer
Capacitance (Crssl or Gate-Drain Capacitance (Cgd) is charged to
VGG + VOS·
SET VOS(olf) = -10 V
"
INPUT
During the turn-on interval, Gate-Source capacitance legs)
OUTPUT
son
50n
-=- VGG
INPUT PULSE
tr- RK
RO-= RO(RT+50)
RO+RT+50
discharges through the series combination of RGen and RK· Cgd
must discharge to VOS(on) through RG and RK in series with the
parallel combination of effective load impedance (A'O) and
Drain-Source Resistance (rds). During the turn-off, this charge
flow is reversed.
Predlctmg turn-on time is somewhat difficult as the channel
resistance rds is a function of the gate-source voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cad
discharges through rds, turn-on time is non-linear. During turn-oTf,
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions; 1)
RK IS equal to RD, which simulates the switching behavior of
cascaded stages where the driving source impedance is normally
the load impedance of the previous stage, and 2) RK = 0 (low
Impedance) the driving source impedance is that of the generator.
FIGURE 8 - TYPICAL CAPACITANCE
FIGURE 7 - TYPICAL FORWARD TRANSFER ADMITTANCE
7.0
0
I-""
L.--
5.0
MPF97V
3.0
2, 0
V
ruv
1/
V
0
V
~
;0
Tchannel::: 25 0 C
VOS=2oV
C3
~
MPF970
D.7
V-
0,2 0,3
1.0
2,0
3.0
5.0
7.0
10
g,. Cgd
Tchannel = 25°C
11~1siS nagligbl'l
2.0
0.03 0.05
0,5 0.7
r-:
1\
5.0
3,0
1.o V
I
.......
7. 0
IIII
"-
I
""'"
IIII
0.1
0,2 0,3 0,5
1.0
2,0 3,0
5.0
VR, REVERSE VOLTAGE (VOLTS)
20
10, ORAIN CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-167
10
20 30
I
MPF970, MPF971
FIGURE 10 - EFFECT OF TEMPERATURE ON DRAIN-SOURCE
ON-STATE RESISTANCE
FIGURE 9 - EFFECT OF GATE-SOURCE VOLTAGE
ON DRAIN-SOURCE RESISTANCE
2B
o\--l~OSS'
7_5mA
0
0
I
./
./
40mA
SOmA
1.B -
'"
~ffi
I
I
I
/
0,-0
I
2. 0
I
II
30mA
I
7
I
0
I
T15mA I20mA
/
/
/
7
./ ./
./
./
./ ./
-
--- --- --1.0
2.0
~~
1.4
1.2
c~
/"
~~ 1.0
Tchannel"'25 0 C
4.0
~~
0.8
Eo",
;? 0.6
0.4
-60
5.0
VGS. GATE·SOURCE VOLTAGE (VOLTS)
•
/"
~'"
"' ....
3.0
1.6
g;o
~~
lo·1.0mA
VGS'O
./
V
/"
/"
,/
........ . /
-30
30
60
90
Tehannel. CHANNEL TEMPERATURE (DC)
FIGURE 11 - lOW FREQUENCY CIRCUIT MQDEl
YIS=JWC,ss
Vos'" l/ross+lwCoss
Vls= ;Yfsl
Yrs=-lwC rss
'os
C,SS = Cgd + Cgs
Crss '" Cgd
Coss == Cgd + Cds. Cds"" 0
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-168
,- /'
120
150
MPF3330
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Reverse Gate-Source Voltage
Symbol
Value
Unit
VDG
20
Vdc
VGS
20
Vdc
VGSR
20
Vdc
Gate Current
IG
10
mA
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
310
2.B2
mW
mWFC
Tsta
-65 to +150
"C
Storage Temperature Range
1 Drain
JFET
LOW-FREQUENCY, LOW NOISE
P-CHANNEL -
DEPLETION
Refer to 2N5460 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
20
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG 1; 10 pA)
10
nA
VGS(off)
-
6.0
Vdc
lOSS"
2.0
6.0
mA
ros
-
BOO
n
Forward Transler Admittance
(VOS = -10 V, 10 = 2.0 mA, I = 1.0 kHz)
IYlsl"
1500
3000
/LmhOS
Output Admittance
(VOS = -10 V, 10 = 2.0 mA, 1= 1.0 kHz)
IYosl
-
40
/Lmhos
Input Capacitance
(VOS = -10 Volts, VGS = 1.0 Volt, 1= 1.0 MHz)
Ciss
-
20
pF
Gate Reverse Current
(VGS = 10V)
IGSS
Gate Source Cutoff Voltage
(VOS = -15 V, 10 = 10 pA)
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = -10V)
Drain·Source Resistance
(10 = 100 pA, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = -5.0 V, 10 = 1.0 mAo RG = 1.0 Mll)
"Pulse Width", 100 ms, Outy Cycle'" 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-169
•
MPF3821
MPF3822
CASE 29·04, STYLE 5
TO·92 (TO·226AA)
2 Source
,~~
MAXIMUM RATINGS
SVmbol
Value
Unit
Drain-Source Voltage
VOS
50
Vdc
Drain-Gate Voltage
VOG
50
Vdc
Gate-Source Voltage
VGS
-50
Vdc
10
10
mAde
Po
310
2.0
mW
mW/'C
TJ
125
'C
Tsta
-65to 150
'C
Rating
Drain Current
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Junction Temperature Range
Storage Temperature Range
, Drain
JFET
GENERAL PURPOSE
N-CHANNEL - DEPLETION
Refer to 2N4220 for graphs.
•
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characteristic
Svmbol
Min
V(BR)GSS
-50
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 !lAde, VOS = 0)
Gate Reverse Current
(VGS = -30 Vdc, VOS = 0)
(VGS = -30 Vdc, VOS = 0, TA = 150'C)
Gate Source Cutoff Voltage
(10 = 0.5 nAdc, VOS = 15 Vdc)
IGSS
VGS(off)
MPF3821
MPF3822
Gate Source Voltage
(10 = 50 !lAde, VOS = 15 Vdc)
(10 = 200 !lAdc, VOS = 15 Vdc)
-
nAdc
-
-
-0.1
-100
-
-4.0
-6.0
Vdc
Vdc
VGS
MPF3821
MPF3822
Vdc
-0.5
-1.0
-2.0
-4.0
MPF3821
MPF3822
1500
3000
4500
6500
MPF3821
MPF3822
1500
3000
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(1)
(VOS = 15 Vdc, VGS = 0)
MPF3821
MPF3822
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)(1)
(VOS = 15 Vdc, VGS = 0, 1= 100 MHz)
Output Admittance(l)
(VOS = 15 Vdc, VGS = 0, I = 1.0 kHz)
/'mhos
IVlsl
IYosl
/'mhos
Input Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Ciss
-
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Crss
-
3.0
pF
Noise Figure
(VOS = 15 Vdc, VGS = 0, RS = 1.0 megohm,
I = 10 Hz, Noise Bandwidth = 5.0 Hz)
NF
-
5.0
dB
Equivalent Input Noise Voltage
(VOS = 15 Vdc, VGS = 0, I = 10 Hz, Noise Bandwidth = 5.0 Hz)
en
-
200
nv/HzV.
MPF3821
MPF3822
10
20
6.0
pF
FUNCTIONAL CHARACTERISTICS
(1) Pulse Test: Pulse W,dth .. 100 ms, Duty Cycle .. 10%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-170
MPF3970
MPF3972
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
"I ~~"-
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Symbol
Value
Unit
VOS
40
Vdc
Drain-Gate Voltage
VOG
40
Vdc
Reverse Gate-Source Voltage
VGSR
-40
Vdc
Forward Gate Current
=
Total Device Dissipation @ TA
Derate above 25°C
25°C
Operating and Storage Junction
Temperature Range
IGF
50
rnA
Po
310
2.82
mW
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
=
-65 to
+ 150
3
1 Drnin
JFET
SWITCHING
mWrC
N-CHANNEL -
°c
DEPLETION
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
40
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 iJA, VGS = 0)
Drain-to-Gate Leakage
(VOG = 20 V, IS = 0)
lOGO
-
250
pA
Gate Reverse Current
(VGS = 20 V, VOS = 0)
IGSS
-
250
pA
Gate Source Cutoff Voltage
(VOS = -20 V, 10 = 1.0 nA)
Drain Source Voltage
(VGS = 0)
(10 = 20 rnA)
(10 = 5.0 rnA)
Drain Cutoff Current
(VOS = 20 V, VGS
Vdc
VGS(off)
-4.0
-0.5
MPF3970
MPF3972
-10
-3.0
Vdc
VGS
-
250
50
5.0
150
30
-
-
30
100
Ciss
-
25
pF
Crss
-
6.0
pF
lOGO
-
500
nA
10(off)
-
500
nA
MPF3970
MPF3972
=
10(off)
1.0
2.0
pA
-12 V)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = 20 V, VGS = 0)
Drain-Source "ON" Resistance
(10 = 1.0 rnA. VGS = 0)
Input Capacitance
(VOS = 20 V, VGS
= 0, f =
Reverse Transfer Capacitance
(VOS = 0, VGS = -12 V, f
rnA
lOSS
MPF3970
MPF3972
rOS(on)
MPF3970
MPF3972
!l.
1.0 MHz)
=
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Drain-Gate Leakage
(VOG = 20 V, IS = 0, TA
Drain Cutoff Current
(VOS = 20 V, VGS
=
=
150°C)
-12 V, TA
=
150°C)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-171
•
MPF3970, MPF3972
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Symbol
Characteristic
Drain-Source "ON" Resistance
(10 = 0, V<:;S = 0, f = 1.0 kHz)
rds(on)
MPF3970
MPF3972
Min
Max
-
30
100
-
Unit
n
SWITCHING CHARACTERISTICS
Switching Characteristics
(MPF3970 Only)
(VOO = 10 V, VGS = 0, 10(onl = 20 rnA, VGS(off) = 10 V)
td(on)
tr
toff
-
10
10
30
ns
-
Switching Characteristics
(MPF3972 Only)
(VOO = 10 V, VGS = 0, 1010n) = 5.0 rnA, VGS(offl = 3.0 VI
td(onl
tr
toff
-
40
ns
-
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-172
40
100
MPF4118,A
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
2 Source
~-@
MAXIMUM RATINGS
1 Drain
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
-40
Vdc
Drain-Gate Voltage
VOG
-40
Vdc
Gate Current
IG
50
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
300
2.0
mW
mWrC
Storage Channel Temperature Range
Tstg
-65to +125
"C
JFET
DC AMPLIFIER TRANSISTOR
N-CHANNEL - DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-40
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(VOS = 0, IG = -1.0 pAdc)
Gate Reverse Current
(VGS = 20 Vdc, VOS = 0)
IGSS
(VGS = 20 Vdc, VOS = 0, TA = 125"C)
Gate Source Cutoff Voltage
(VOS = 10 Vdc, 10 = 1.0 nAdc)
-
Vdc
MPF4118
MPF4118,A
-
-10
-1.0
pAdc
-
MPF4118
MPF4118,A
-
-25
-2.5
nAdc
-3.0
Vdc
VGS(off)
-1.0
MPF4118,A
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(l)
(VOS = 10 Vdc, VGS = 0)
MPF4118,A
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS = 10 Vdc, VGS = 0, 1= 1.0 MHz)
Ciss
-
3.0
pF
Reverse Transler Capacitance
(VOS = 10 Vdc, VGS = 0, I = 1.0 MHz)
Crss
-
1.5
pF
9ls
80
250
p.mhos
gas
-
5.0
p.mhos
Common-Source Forward Transconductance
(VOS = 10 Vdc, VGS = 0, f = 1.0 kHz I
MPF4118,A
Common-Source Output Conductance
(VOS = 10 Vdc, VGS = 0, f = 1.0 kHz)
MPF4118,A
(1) lOSS is measured during a 2.0 ms interval 100 ms after power is applied.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-173
II
MPF4118,A,
FIGURE 1 - TRANSFER CHARACTERISTICS
500
Vos = 10V
TC = 25'C -
100
"
I"::
............
-0.5
-1.0
-1.5
-2.0
VGS. GATE·SOURCE VOLTAGE (VOLTS)
FIGURE 3 - CAPACITANCE versus DRAlN-80URCE VOLTAGE
FIGURE 2 - TRANSCONDUCTANCE CHARACTERISTICS
500
•
1
!~
VOS=10V_
TC = 25'C
-400
i200
r-...
1.5
0
...........
.........
.5
'\.
-0.5
"-
-1.0
-1.5
-2.0
VGS. GATE-SOURCE VOLTAGE {VOLTSI
-2.5
"
f'-
Coos I - -
-
Cm -
4.0
8.0
12
VOS. DRAIN-SOURCE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-174
Ciss
I--
16
MPF4150
CASE 29-04, STYLE 23
TO-92 (TO-226AA)
2 Source
,~,~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
150
Vdc
Drain-Gate Voltage
VOG
150
Vdc
Drain Current -
10
10M
250
500
mA
Po
625
5.0
mW
mWfC
TJ, Tstg
-55to +150
°C
Continuous
Pulsed(1)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage
Temperature Range
(1) The Power
current.
~issipation
1 Gate
TMOS FET
TRANSISTOR
N-CHANNEL -
DEPLETION
of the package may result in a lower continuous drain
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)OSX
-150
-
Vdc
VGS(off)
-1.0
OFF CHARACTERISTICS
Breakdown Voltage Drain to Source
(VGS = -10 V, 10 = 10 !
~
TJ -25°C
500
------ ••• MPF4391 VGS(off) - 12 V
2oo~.....t+l--+--1RK·RO· - - - - MPF4392
·7.0V
~~ 100~1,~t--...~~~A~III-!l~~~M~P~F4~39t3~~,'~5'!0
~V
".
g
•
50
w
'"w
~
20
;;C
10
"
5.0
2.0
-- - -
- __
1
·r·· .... ·.. ··· .. ·-·· ..
1.0L-l--u-U.-_-'-:':----:::-'-:':-'-::':-'--':':_-'--=--:':--'-:.
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
ID, DRAIN CURRENT (mA)
10, DRAIN CURRENT (mA)
FIGURE 3 - TURN'()FF DELAY TIME
FIGURE 4 - FALL TIME
1000
500
200
]
w
'";::
~
~
~
'"
100
t-
...... MPF4391
.....-:iP'RK - RD' -~ ___ MPF4392 VGS(off) :)20 ~
-'.".1::-.,
MPF4393. 5:0 v
50
-0,
20
10
RK'
-..
-0,
~
o,.?--r-
'.. _ ".:::
5.0
......
'°
2.0H+1f-tt-+-+-++++t+1i+-t-+-I-f"i
0
1.0 ':-'-:':"-':'::--'-:':----::-'-:':--'c:':-'--':':--'--:!::--:'':-l-:'.
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20 30
50
1.°0L:.5,-L,J0.7=-'-'I:-1:.0,---L-:2'::.0--:f3.0:-'-:'5'=.0.!-.:f7.::'0--'":'10:--'--:!:20:--;!3::-0-'-~50
10, DRAIN CURRENT (mA)
ID, DRAIN CURRENT (mA)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-179
"
MPF4391, MPF4392, MPF4393
NOTE 1
FIGURE 5 - SWITCHING TIME TEST CIRCUIT
The switching characteristics shown above were measured using a
test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (-VGG). The
'Voo
Drain-Source Voltage (VOS) is slightly lower than Drain Supply.
Voltage (VOO) due to the voltage divider. Thus Reverse Transfer
RO
Capacitance (erss ) or Gate-Drain Capacitance (CgdJ is charged to
SET VOS(oil)·10V
VGG
,
INPUT
+ VDS·
During the turn-on interval, Gate-Source Capacitance (Cgs ) dis-
"
RK,
charges through the series combination of RGen and RK.
RT
Cgd
must discharge to VOS(on) through RG and R K in series with die
parallel combination of effective load impedance (R'O) and DrainSource Resistance (rdsl. During the turn-off, this charge flow is
OUTPUT
50!)
50!l
reversed.
Predictmg turn-on time is somewhat difficult as the channel
resistance rds is a function of the gate-iOurce voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cgd
discharges through rds. turn-on time is non-linear. During turn-off,
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions; 11
RK is equal to RO' which simulates the switching behavior of
INPUT PULSE
Ir 025115
tl .... 05115
PUlSEWIOTH=20JJ$
DUTY CYCLE <"20-,
•
cascaded stages where the dnving source impedance is normally the
load impedance of the previous stage, and 21 R K = 0 (low imped·
ancel the driving source impedance is that of the generator .
FIGURE 7 - TYPICAL CAPACITANCE
FIGURE 6 - TYPICAL FORWARD TRANSFER ADMITTANCE
0
15
~,...
UFlJ9l
~ """"
--:
0
0
MPF4391
MPF4393
.... /'
7.0
/"
Tchannel'" 25 0 C
VOS'15 V
3. 0
1.0
0.030.05
2.0
1.0
20
2.0 3.0
5.0 7.0 10
10. DRAIN CURRENT (mA)
30
50
200
w
I-
lOSS 25mA
c 10
mA
160
~;;;
0,"
"""
~S
:ow
0<>
,<,Z
zz
"'0
0-
1.2
~~
-
~
80
~i 10
~ -§
"';;;
J
Tehanne!:;z 250C
90
r
'" .........
6~ 50
"1<
~~
40
o~ 30
/'"
20
......
/1'"
/
r<
......
V
10
o
10
-
/"'~
/' 51, @VGS=O
'-
60
20
30
40
50
60
70
80
VGSl,ft}
-
1
'NOTE 2
9,0
The Zero-Gate-Voltege Drain Current (lOSS). isthe principle deter8.0 LIJ
minant of other J-FET characteristics. Figure 10 shows the
to
relationship of Gate-Source Off Voltege (VaS(offl) and Drain7.0 ~
On Resi.tance Ird.(on)) to lOSS' Mo.t of the device. will
Source
o
6D >
be within ±.10% of the value. shown in Figura 10_ This data will
~Ui be useful in predicting the characteristic vlriation. for 8 given
r-- ' - - 5.0 0§~0 part number.
For example:
4.0 ~~
Unknown
3.0
rds(on) and Vas range for an MPF4392
..;
Tha elactrical cheractari.tic. table indicate. that an MPF4392
2.0 ~
has an lOSS range of 25 to 75 mA_ Figure 10. show. rdl(on)
1.0
= 52 Ohms for lOSS = 25 mA and 30 Ohm. for lOSS - 75 mA.
90 100 110 120 130 140 150
~
0
The corresponding VGS values are 2.2 volts and 4.8 volts.
lOSS. ZERO-GATE-VOlTAGE DRAIN CURRENT ImA)
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-181
MPF4856,A
thru
MPF4861,A
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
MAXIMUM RATINGS
MPF4856.A MPF4859.A
MPF4857.A MPF4860.A
Symbol MPF4858.A MPF4861.A
Rating
2 Source
VOS
+40
+30
Vdc
Drain-Gate Voltage
VOG
+40
+30
Vdc
Reverse Gate-Source Voltage
VGSR
-40
Forward Gate Current
IGF
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
Storage Temperature Range
Tsta
-30
~~
Unit
Drain-Source Voltage
1 Drain
Vdc
50
mAdc
360
2.4
mW
mWrC
-65to +150
"C
JFET
SWITCHING
N-CHANNEL -
DEPLETION
Refer to 2N4856 for graphs.
•
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
-40
-30
-
-
0.25
0.25
0.5
0.5
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 pAdc, VOS = 0)
Gate Reverse Cu rrent
(VGS = -20 Vdc, VOS
(VGS = -15 Vdc, VOS
(VGS = -20 Vdc, VOS
(VGS = -15 Vdc, VOS
V(BR)GSS
MPF4856,A, MPF4857,A, MPF4858,A
MPF4859,A, MPF4860,A, MPF4861,A
IGSS
=
=
=
=
MPF4856,A,
0)
MPF4859,A,
0)
0, TA = 150"C) MPF4856,A,
0, TA = 150"C) MPF4859,A,
Gate Source Cutoff Voltage
NOS = 15 Vdc, 10 = 0.5 nAdc)
MPF4857,A,
MPF4860,A,
MPF4857,A,
MPF4860,A,
MPF4858,A
MPF4861,A
MPF4858,A
MPF4861,A
Drain Cutoff Current
NOS = 15 Vdc, VGS = -10 Vdc)
(VOS = 15 Vdc, VGS = -10 Vdc, TA = 150"C)
-4.0
-2.0
-0.8
10(off)
nAdc
pAdc
Vdc
VGS(off)
MPF4856,A, MPF4859,A
MPF4857,A, MPF4860,A
MPF4858,A, MPF4861,A
Vdc
-
-10
-6.0
-4.0
0.25
0.5
nAdc
pAdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(1)
(VOS = 15 Vdc, VGS = 0)
Drain-Source On-Voltage
(10 = 20 mAdc, VGS = 0)
(10 = 10 mAdc, VGS = 0)
(10 = 5.0 mAdc, VGS = 0)
lOSS
MPF4856,A, MPF4859,A
MPF4857,A, MPF4860,A
MPF4858,A, MPF4861,A
50
20
8.0
VOS(on)
MPF4856,A, MPF4859,A
MPF4857,A, MPF4860,A
MPF4858,A, MPF4861,A
-
mAdc
100
80
Vdc
-
0.75
0.5
0.5
-
25
40
60
-
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
rds(on)
MPF4856,A, MPF4859,A
MPF4857,A, MPF4860,A
MPF4858,A, MPF4861,A
Input Capacitance
(VOS = 0, VGS = -10 Vdc, f = 1.0 MHz) MPF4856 thru MPF4861
MPF4856A thru MPF4861A
Ciss
Reverse Transfer Capacitance
(VOS = 0, VGS = -10 Vdc, f = 1.0 MHz)
MPF4856 thru MPF4861
MPF4856A, MPF4859A
MPF4857A, MPF4858A, MPF4860A, MPF4861A
Crss
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-182
Ohms
-
pF
18
10
pF
-
-
8.0
4.0
3.5
MPF4856,A thru MPF4861,A
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 2SoC unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
td(on)
-
6.0
S,O
6.0
6.0
10
8.0
ns
ns
-
3.0
4.0
10
8.0
-
25
20
50
40
100
80
SW1TCHING CHARACTERISTICS
Turn-On
Delay Time
Conditions for MPF48S6,A, MPF48S9,A: MPF48S6, MPF48S9
MPF48S6A, MPF4BS9A
MPF48S7, MPF4B60
(VOO ~ 10 Vdc, 10(on) ~ 20 mAdc,
MPF4857A, MPF4B60A
VGS(on) ~ 0, VGS(off) ~ -10 Vdc)
MPF4858, MPF4861
MPF4BS8A, MPF4861A
-
-
Rise Time
Conditions for MPF48S7,A, MPF4860,A: MPF4856,A, MPF4BS9,A
MPF4BS7,A, MPF4860,A
MPF4858, MPF4861
(VOO ~ 10 Vdc, 10(on) ~ 10 mAdc,
MPF4BS8A. MPF4861A
VGS(on) ~ 0, VGS(off) ~ - 6.0 Vdc)
tr
Turn-Off Time
M PF4B56, M PF4BS9
Conditions for MPF4858,A, MPF4861,A: MPF4856A, MPF4859A
MPF4857, MPF4B60
MPF4857A, MPF4860A
(VOO ~ 10 Vdc, 10(on) ~ 5.0 mAdc,
MPF4858, MPF4B61
VGS(on) ~ 0, VGS(off) ~ -4.0 Vdc)
MPF4858A; MPF4861A
toff
-
ns
(1) Pulse Test: Pulse Width ~ 100 ms, Duty Cycle'" 10%.
(2) The 10(on) values are nominal; exact values vary slightly with transistor parameters.
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-183
MPF6659 thru 6661
For Specifications, See 2N6659 Data.
U308
U309
U310
CASE 27-02, STYLE 4
TO-52 (TO-206AC)
,/I
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
Gate Current
IG
20
mAde
Total Oevice Oissipation @ TA = 25°C
Oerate above 25°C
Po
500
4.0
mWrC
-65to +150
°C
Rating
Operating and Storage Junction
Temperature Range
•
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA
=
2
mW
2 Drain
-.~~
1 Source
JFET
VHF/UHF AMPLIFIER
N-CHANNEL -
DEPLETION
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
-25
-
-
V
-
-
-150
-150
-1.0
-1.0
-2.5
-
-6.0
-4.0
-6.0
12
12
24
-
60
30
60
-
-
1.0
10
10
10
-
-
20
20
18
150
-
-
2.5
pF
-
5.0
pF
10
-
nVv'Hz
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !lA, VOS = 0)
Gate Reverse Current
!VGS = -15V)
(VGS = 0, TA = 125°C)
IGSS
Gate Source Cutoff Voltage
(VOS = 10 V, 10 = 1.0 nA)
V
VGS(off)
U308
U309
U310
pA
nA
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current!l)
(VOS = 10 V, VGS = 0)
mA
lOSS
U308
U309
U310
Gate-Source Forward Voltage
(lG = 10 mA, VOS = 0)
VGS(f)
V
SWITCHING CHARACTERISTICS
Common-Gate Forward Transconductance(l)
(VOS = 10 V, 10 = 10 mA. f = 1.0 kHz)
mmhos
9fg
U308
U309
U310
Cgs
-
en
-
Common-Gate Output Conductance
(VOS = 10 V, 10 = 10 mA, f = 1.0 kHz)
gog
Orain-Gate Capacitance
(VGS = -10 V, VOS = 10 V, f
Cgd
=
1.0 MHz)
Gate-Source Capacitance
(VGS = -10 V, VOS = 10 V, f
=
1.0 MHz)
Equivalent Short-Circuit Input Noise Voltage
(VOS = 10 V, 10 = 10 mA, f = 100 Hz)
(1) Pulse test duration = 2.0 ms.
(2) See Figures 10 and 11 for Noise Figure and Power Gain information.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-184
ILmhos
U308, U309, U310
FIGURE 1 - 450 MHz COMMON-GATE AMPLIFIER TEST CIRCUIT
L2P~2S ~~~D
C3
C2
C4
.-____~·It---.--e~--~~C6~1
tV OD
C1 = C2 = 0.8 -- 10 pF. JFQ #MVMQ10W.
C3 = C4 '" 8-35 pF Ene #539-0020.
C5 = C6 == 5000 pF Erie 12443-000l.
C7 == 1000 pF. Allen Bradley #FA5C.
RFC"" 0.33 ~H Miller .if:9230-30.
L1 = One Turn #16 Cu, 1/4" 1.0. (Air Core)
L2p= One Turn #16 Cu, 1/4" 1.0. (Air Core).
L2S = One Turn #16 Cu, 1/4" 1.0. (Air Corel.
FIGURE 2 - DRAIN CURRENT and TRANSFER
CHARACTERISTICS versus GATE·SOURCE VOLTAGE
0,
0
0
0
0
,
10
I
I
60 >-
/
TA - ·-55 0 C
-, "-
[\.
/+25 0 C"
lOSS
+25 0C
/
"-
/
"X
,....
~
V
0
~
""
/'
/
Y
/
~
z
....-;:250~
40
30
20
1.0
10 - VGS. GATE·SOURCE VOLTAGE (VOLTS)
10SS,VGS. GATE·SOURCE CUTOFF VOLTAGE (VOLTS)
5
._---
~
0
'">;;\
,
0
~
o
.-. ......
0
·50
o
FIGURE 4 - COMMON·SOURCE OUTPUT
ADMITTANCE and FORWARD TRANSCONDUCTANCE
versus DRAIN CURRENT
-4.0
,
~
~
,/
L
L
0
+25 0 C
/
,
>=
20
..... ··550C~
~ +1500 C 1
.......,. -"""""J
TA:= -55°C
~
z
30
/+150 0 C
,,-
Ol-VOS" 10 V
1:= 1.0 MHz
l5
~
50
40
/'
...f'
/
35
;;0
§
/
"- ,Vas - 10V
0
-5.0
FIGURE 3 - FORWARD TRANSCONDUCTANCE
versus GATE·SOURCE VOLTAGE
/
""
....-:::
/'
/
/ "" <150°C
1// ....-r/ ':r.C:?,
-SsoC/ .
./
./
//./
+1500 C
Ar
~
I
I
...,,~
30
·2.0
·10
VGS. GATE SOURCE VOLTAGE (VOLTS)
FIGURE 5 - ON RESISTANCE and JUNCTION CAPACITANCE
versus GATE·SOURCE VOLTAGE
10
1
ROS I
E
3
w
u
z
V
70
J::'" w~
u
~ z
«
~
~
>-'"
-
;1:
;3
10
10. ORAIN CURRENT (mAl
o
·10
~V
VCys 4
".
2
Cgd
0
·90
80
70
60
30
20
40
VGS. GATE SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-185
/ /
/
'~" 40
10~~01~L-~~~0~1~0~2~0~3~0~5~1~0~2~0~3~0~5~0~1~0~2~0~3~0~5~O~10~0
120
10
••
U308, U309, U310
FIGURE 6 - COMMON-GATE Y PARAMETER
MAGNITUDE versus FREQUENCY
FIGURE 7 - COMMON-GATE S PARAMETER
MAGNITUDE versus FREQUENCY
,S211.ISlli
Vos=
24
lov
TA=25 0 C
oS
--
18
::::
~
12
~
,;
Yll
./
o
100
300
200
t--
079 039
-g
12
........ V
V
~
700
•
FIGURE B - COMMON-GATE Y PARAMETER
PHASE-ANGLE versus FREQUENCY
li21, 011
......
00
On
.......
160 0
/
I
L
30 0
150 0
./
./'
...............
140 0
10
130 0
o~
,/
°12
/1/'
0ll.OI2
-20 0 1200
86 0
-40 0 100 0
85 0
-60 0
80 0
84°
-80 0
60 0
-100 0
40 0
80 0
.......
1200
VOS=lOV
'D"'lOmA
100
200
300
500
f, fREQUENCY IMHzl
!-
!'i- 160
'-
0
-180°
200 0
700
83°
82°
7.0 -f=450MHz
_BW~10MHz
~
u:
z
4. 0
2
7. 0
2
6. 0
I
Circuit in Figure 1
~5. 0
~ 5. 0
=>
'"~
I
Gpg
r'-
z
;;0
~
(!J'i.
0.024
094
0011
091
0.90
01Y
0
o
0
10
80'
~
5OC
-1000
100
300
500
f, fREQUENCY (MHz)
700
1000
I
VOi=16v
10= 10mA
TA=25'C
2
1
Circuit in Figure 1
11
14
I
r-!pg
-...~
,/
~
30
14
16
18
11
10, DRAIN CURRENT (mA)
60'
~
011
'0'" 10 rnA
"i
\
'\N~?'
VOS=10V
~A
40'
'\~
./
V
10'
""
/
....-
L.I.."2. 0
z
0
10
0.96
1000
""
~
6.0
8.0
~
"'~ 4. 0
2. 0
6.0
700
,/
I
'"
....- 9.0 !i""!! '"u: 3. 0
Nf
3, 0
0
4.0
0.036
FIGURE 11 - NOISE FIGURE 8nd
POWER GAIN versus FREQUENCY
VO~'20J
"-
~
~
-120 0 20 0
100
1000
FIGURE 10 - NOISE FIGURE and
POWER GAIN versus DRAIN CURRENT
iii 6.0
.:::s: c-....
.......
.100 0
V
TA" 15~G
00
8.0
~
vii'"-
140 0
./' °11
098
°21.°22
0
-60 0
<:., /
/
./
20 0
-40 0
........ K21
87 0
20 0
-.~
40 0
170 0
0048
FIGURE 9 - S PARAMETER PHASE-ANGLE
versus FREOUENCY
012, On
50 0
500
300
1.00
f, fREQUENCY (MHz)
f, fREQUENCY (MHzl
180 0
>" ./
200
0.060
l\
V11
f--'"
055 01 5
100
1000
/ /
--
061 02 I
Y12
500
/1/
>Iv
ILL
10'" lOrnA
0.67 02 7
0.6
!IV
fS2l-- ['."-
TA=15 0 C
N
Y21
;-. ~2
VOS=IOV
0.73 03 3
E
oS
-
V
1.8
,/
Y22
6.0
24
V
'0'" lOrnA
-g
E
IS12I.IS221
085 04 5
30
30
~f
1
1
60
10
200
100
f, fREQUENCY (MHzl
50
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
300
500 700 1000
U308, U309, U310
FIGURE 12 - 450 MHz IMD EVALUATION AMPLIFIER
C6
INPUT
RS
=
50
BW (3dB) - 36.5 MHz
10 - 10 mAde
GI
I
n
C4
L3
OUTPUT
RL'" 50
I
I
n
Cl "'- '-10 pf Johanson Air variable trimmer.
C2. C5 '" 100 pf feed thru button capacitor
C3, C4, C6 :::. 0.5-6 pf Johanson Air variable trimmer
=h
I
I
VOS - 20 Vdc
Device case grounded
1M test tones - f1 ;: 449.5 MHz, 12 == 450.5 MHz
L 1;" 1/8" x 1/32" x 1·5/8" copper bar
L2, L4 == Ferroxcube Vk200 choke.
L3'" lIS" x 1/32" x 1-7/8" copper bar.
=
SHIELD
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with
C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB. the 3rd order intercept point
(lP) value is 29 dBm. Adjusting C4. C6 to provide larger load values will result in higher gain. smaller bandwidth and lower
IP values. For example. a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
FIGURE 13 - TWO TONE 3RD ORDER INTERCEPT POINT
-140
UilO JJET
I
w
~
>~
~
~
>-
~
-4 0
-8 0
0
-10
\ .....
-120
-120
..... V
/
FU~OAMENTAL OUTPUT""" V
-6 0
V
./
.Y
I
3Rd ORdER IMD OUTPUT
I
..... V
-100
~
.- .-" /
10'" 10 mAde
oI-Fl = 449.5 MHz
F2 = 450.5 MHz
-20
~
~
3RD ORDER INTERCEPT POINT_
I
+2 oI-vos = 20 Vdc
-80
-60
-40
V
J
-20
+20
Example of Intercept pOint plot use:
Assume two in-band signals of -20 d8m at the amplifier input,
They will result in a 3rd order IMO signal at the output of -90
dBm. Also. each signal level at the output will be -11 dBm, show·
ing an amplifier gain of 9.0 dB and an intermodulation ratio (IMA)
capability of 79 dB. The gain and IMA values apply only for signal
levels below compression.
INPUT POWER PER TONE (dBml
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-187
•
VN10LM
CASE 29-03, STYLE 22
TO-92 (TO-226AE)
:~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOSS
60
Vdc
Gate-Source Voltage
VGS
±30
Vdc
Drain .Current -
10
10M
0.3
1.0
Adc
Po
1.0
8.0
Watts
mWrC
TJ, Tstg
-40 to + 150
"C
Rating
Continuous(l)
Pulsed(2)
Total Power Dissipation @ TA = 25"C
Derate above 25"C
Operating and Storage
Temperature Range
1 Source
TMOS FET
TRANSISTOR
(1) The Power Dissipation of the package may result m a lower contmuous dram
current.
(2) Pulse Width", 300 p.S, Duty Cycle.
•
I
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
I
Symbol
Min
Typ
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 100 pAl
V(BR)OSS
60
-
-
Zero Gate Voltage Drain Current
(VOS = 45 V, VGS = 0)
lOSS
-
0.1
10
pAdc
Gate-Body Leakage Current
(VGS = -15 V, VOS = 0)
lass '
nAdc
IGSS 2
-
100
Gate-Body Leakage Current
(VGS = 15 V, VDS = 0)
-
-100
nAdc
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 rnA)
VGS(th)
0.8
-
2.5
Vdc
On-State Drain Current
(VOS = 15 V, VGS = 10 V)
ID(on)
750
-
-
rnA
Forward Transconductance
(VOS = 15 V, 10 = 500 rnA)
9fs
200
-
-
mmhos
Drain-Source On-Voltage
(VGS = 5.0 V, 10 = 200 rnA)
VDS(on)'
-
1.5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, 10 = 500 rnA)
VOS(on)2
-
-
2.5
Vdc
Drain-Source On-Resistance
(VGS = 5.0 V, 10 = 200 rnA)
rOS(on)'
-
-
7.5
n
Drain-Source On-Resistance
(VGS = 10 V, 10 = 500 rnA)
rDS(on)2
-
-
5.0
n
Input Capacitance
(VOS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss
-
-
60
pF
Output Capacitance
(VOS = 25 V, VGS = 0, f = 1.0 MHz)
Coss
-
-
25
pF
Reverse Transfer Capacitance
(VOS = 25 V, VGS = 0 V, f = 1.0 MHz)
Crss
-
-
5.0
pF
Turn-Op Time
(VOS = 15 V, RL = 23
-
Turn-Off Time
(VOS = 15 V, RL = 23
ns
= 50
-
10
n, RG
-
ns
= 50 n, Yin = 20 V)
ton
10
n, RG
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vdc
ON CHARACTERISTICS
n, Yin
toft
= 20 V)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-188
VN0610LL
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
Orain-Gate Voltage (RGS
=
1 Mn)
Gate-Source Voltage
Drain Current
Continuous
VOSS
60
Vdc
VOGR
60
Vdc
VGS
±40
CASE 29-04, STYLE 22
TO-92 (TO-226AA)
2 Gate
Vdc
o~,~
mAde
Pulsed
Total Power Oissipation @ TA
Oerate above 25°C
=
25°C
Operating and Storage
Temperature Range
10
10M
190
1000
Po
400
3.2
-55 to
TJ, Tstg
+ 150
mW
mWrC
1 Source
°c
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16" from case
ROJA
312.5
°CIW
TL
300
°C
N·CHANNEL - ENHANCEMENT
for 10 seconds
ELECTRICAL CHARACTERISTICS (TC
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)OSS
60
-
Vdc
-
10
500
IGSSF
-
-100
VGS(th)
0.8
2.5
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 100 /LA)
Zero Gate Voltage Orain Current
(VOS = 4B V, VGS = 0)
(VOS = 4B V, VGS = 0, TJ = 125°C)
lOSS
Gate-Body Leakage Current, Forward
(VGSF = 30 Vdc, VOS = 0)
!LAde
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage
(VOS
=
VGS, 10
=
1.0 rnA)
Static Drain-Source On-Resistance
(VGS
(VGS
=
=
10 Vdc, 10
10 Vdc, 10
=
=
500 rnA)
500 rnA, TC
rOS(on)
=
Orain-Source On-Voltage
(VGS = 5.0 V, 10 = 200 rnA)
(VGS = 10 V, 10 = 500 rnA)
On-State Orain Current
(VGS
-
5.0
9.0
-
1.5
2.5
10(on)
750
9fs
100
-
125°C)
VOS(on)
=
10 V, VOS '" 2.0 VOS(on))
Forward Transconductance IVOS '" 2.0 VOS(on), 10
=
500 rnA)
Vdc
Ohm
Vdc
mA
/Lmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VOS
f
= 25 V, VGS = a
= 1.0 MHz)
Reverse Transfer Capacitance
-
60
Coss
Crss
-
5.0
Ciss
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Turn-Off Delay Time
(VOD = 15 V, ID = 600 rnA
Rgen = 25 ohms, RL = 23 ohms)
'Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-189
25
pF
•
VN2222LL
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS
~
1 Mfi)
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
Value
Unit
VOSS
60
Vdc
VOGR
60
Vdc
VGS
±40
Vdc
mAde
Total Power ~issipation @ TA
Derate above 25°C
~
25°C
Operating and Storage
Temperature Range
10
10M
150
1000
Po
400
3.2
mW
mWrC
TJ, Tstg
-55to +150
°c
CASE 29-04, STYLE 22
TO-92 (TO-226AA)
"I ~~
3
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16" Irom case
for 10 seconds
•
1 Source
ROJA
312.5
°CIW
IL
300
°C
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
V(BR)OSS
60
-
-
10
500
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 100 "A)
Zero Gate Voltage Orain Current
(VOS ~ 48 V, VGS ~ 0)
(VOS ~ 48 V, VGS ~.O, TJ ~ 125°C)
lOSS
Gate-Body Leakage Current, Forward
(VGSF ~ 30 Vdc, VOS ~ 0)
IGSSF
-
-100
VGS(th)
0.6
2.5
Vdc
.
"Adc
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage
(VOS ~ VGS, 10 ~ 1.0 mAl
Static Drain-Source On-Resistance
(VGS ~ 10 Vdc, 10 ~ 0.5 Adc)
(VGS ~ 10 Vdc, 10 ~ 0.5 V, TC ~ 125°C)
rOS(on)
Drain-Source On-Voltage
(VGS ~ 5.0 V, 10 ~ 200 mAl
(VGS ~ 10 V, 10 ~ 500 mAl
VOS(on)
On-State Orain Current
(VGS ~ 10 Vdc, VOS ;;. 2.0 VOS(on))
Forward Transconductance
(VOS ~ 10 V, 10 ~ 500 mAl
Vdc
Ohm
-
7.5
13.5
-
1.5
3.75
Vdc
10(on)
750
-
mA
9ls
100
-
"mhos
Ciss
-
60
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VOS
~ 25 V, VGS ~
I ~ 1.0 MHz)
0
Reverse Transfer Capacitance
Coss
Crss
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Turn-Off Delay Time
(VOO ~ 15 V, ID ~ 600 mA
Rgen ~ 25 ohms, RL ~ 23 ohms)
'Pulse Test: Pulse Width", 300 pJl, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-190
25
5.0
pF
VN2222LL
1,8 I-- Tl
~ 25!C
1/2ffV
1.6
ff
::;;
VGS
I
1.4
/V
>-
i
1
az 0.8
~ 0.6
o
.9 0,4
0.2
~
2.4
t;
2,2
~
til
"2
E.
~
.9 0,2
10
3
4
5
6
10
7
VGS, GATE SOURCE VOLTAGE {VOLTS}
Figure 2. Transfer Characteristics
~ 1.4
V
V
/""
1.05
1. 1
VOS ~ VGS
"t'-,
r-.....
~
>
0.95
~
0.85
~
0.8
10~1mA-
I'--..
-.......
~
~ 0.9
~
-20
~
w
V
0,6 I-0,4
-60
1.15
~
..,...-
1
~
~
L
1.8
0.8
~
IL
..4V
VGS~10V
~~
1.2
0t.;c
~~
~
1,2
~~ 1.6
!.e
l- V
4V
3V
~o
V(
£12SOC
j~
az 0.4
6V
/y
'j,
~ 06
1--10 ~ 200 mA-1--
t§
I
z
5V
3
4
5
6
7
VDS, DRAIN SOURCE VOLTAGE {VOLTS}
Figure 1. Ohmic Region
-55'C/
~
cc
7V
:--.
2
10 V
::;;
8V
//. V
#. / ..............
~ "........
~~
~
~
9V
./
'" 1,2
0,8
~10V
VOS
.......
r--.
~
~ 0.75
g' 0.7
+20
+60
+ 100
+ 140
-60
-20
0
T. TEMPERATURE I'C}
Figure 3. Temperature versus Static Drain-Source
On-Resistance
+20
+60
T, TEMPERATURE I'C}
+ 100
+140
Figure 4. Temperature versus Gate Threshold Voltage
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-191
•
•
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
6-192
Tape and Reel •
Specifications
7-1
Embossed Tape and Reel
Tape and Reel
Data for
Discrete
Surface Mount
Devices
Embossed Tape and Reel is used to facilitate automatic pick and place
equipment feed requirements. The tape is used as the shipping container
for various products and requires a minimum of handling. The antistatic!
conductive tape provides a secure cavity for the product when sealed with
the "peel-back" cover tape.
•
•
•
•
•
•
•
Two Reel Sizes Available (7" and 13")
Used For Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA 481
MLL-34, SOT-23, SOT-143 in 8 mm Tape
MLL-41, SO-8 in 12 mm Tape
DPAK, SO-14, SO-16 in 16 mm Tape
Ordering Information
Use the standard device title and add the required suffix as listed in the
option table below. Note that the individual reels have a finite number of
devices depending on the type of product contained in the tape. Also note
the minimum lot size is one full reel for each line item, and orders are
required to be in increments of the single reel quantity. Minimum order
$200.00/Iine-line.
80T-23
801·143
MLL-34
Bmm
Bmm
Bmm
~ O~l~~igi[~r ~
•
PACKAGE8
MLL-34 80-8
MLL-41
80-14
80T-23
80·16
80T·143 DPAK
~ o~l~l~o9°
MLL-41
80·8,14,16
12mm
12,16mm
~ O~O[gf[g([~(
)
DPAK
~0-0-0-0-0-0~
~~[ijiEb]
J:EI~ IDI 0
~ o~r~f~O~f ~
)
m;;1
..
16mm
0000000
0000000
DlDlDl[Q]
DIRECTION
OF FEED
per Reel
Reel Size
(inchl
Tape & Reel
Lot Size
(Mini
Device
Suffix
8
8
3,000
10,000
7
13
3,000
10,000
11
T3
SOT-I43
8
8
3,000
10,000
7
13
3,000
10,000
11
T3
MLL-34
8
8
2,000
5,000
7
13
2,000
5,000
Tl
T3
MLL-41
12
12
1,000
5,000
7
13
1,000
5,000
11
T3
SO-8
12
12
500
2,500
7
13
500
2,500
Rl
R2
SO-14
16
16
500
2,500
7
13
500
2,500
Rl
R2
SO-16
16
16
500
2,500
7
13
500
2,500
Rl
R2
DPAK
16
1,800
13
1.800
RL
Tape Width
(inml
SOT-23
Package
Device
SMALL-SIGNAL DEVICES
MOTOROLA SEMICONDUCTORS
7·2
TAPE AND REEL DATA FOR DISCRETE SMD
CARRIER TAPE SPECIFICATIONS
Dl
FOR COMPONENTS
2.0 mm x 1.2 mm
AND LARGER
USER DIRECTION OF FEED
RMIN.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS "R"
WITHOUT DAMAGE
1
TYPICAL
COMPONENT CAVITY
CENTER LINE
l00mm
13.937 " 1 .
I
I
rlmmMAX
~r;""o"'o:::-o-~-_0
[1.03~'~~AX 250mm~-+
+---=
1 .. -
19.843")----.1
CAMBER ITOP VIEW)
ALLOWABLE CAMBER TO BE 1 mmll00 mm NONACCUMULATIVE OVER 250 mm
DIMENSIONS
Tape
Size
Bl Max
D
Dl
E
F
P
K
Po
Pz
RMin
Bmm 4.2mm 1.5+0.1 mm 1.0mm Min 175±0.1 mm 3.5±0.5mm 2.4mm Max 4.0±0.1 mm 4.0±0.1 mm 2.0±0.50mm 25mm
1.157 ± .004") (.157 ± .004") 1.079 ± .002") 1.98")
1.165")
-0.0
1.039")
1.069 ± .004") 1.13B ± .002")
1.094")
1.059+ .004"
-0.0)
12mm B.2mm
1.323")
1.5 mm Min
1.060")
5.5±0.5mm 4.5 mm Max 4.0±0.1 mm
1217 ± .002")
1.177")
1.157 ± .004")
TMax
W
Q.400mm B.0±.30mm
1.016") (.315±.012")
30mm
11.1B")
12±.30mm
1.470 ± .012")
2.0±.010 mm 40mm
1.079 ± .004") 11.575")
16±.30mm
1.630 ± .012")
B.O±.Ol mm
1.315 ± .004")
7.5±0.10mm
1.295 ± .004")
16mm 12.1 mm
(.476")
6.5mm
1.256")
4.0±0.1 mm
1.157± .004")
8.0±.01 mm
1.315 ± .004")
12.0 ± .004 mrr
(.472 ± .004")
Metric Dimensions Govern -
NOTE 1:
English are in parentheses for reference only.
Ao, BO. and Ko are determined by component size. The clearance between the components and the cavity must be within .05 min. to .50
max., the component cannot rotate more than 10° within the determined cavity.
SMALL-SIGNAL DEVICES
MOTOROLA SEMICONDUCTORS
7-3
•
TAPE AND REEL DATA FOR DISCRETE SMD
REEL DIMENSIONS
Metric Dimensions Govern -
English are in Parentheses for Reference only.
-l
lZl
I
}S:
13.0 mm ± 0.5 mm
(.511" ± .001"1
lrl.5mmMIN
1.06")
,- ,-
lLl "
A
10.1mmMIN I
(.795"1
\
11+'" \ --~
~-_/
I
\-TMAX
--.L
-,
T
-.L
50 mm MIN
(1.969")
FULL RADIUS
G
TMax
Size
AMox
8mm
330mm
(12.992")
8.4mm+1.5mm, -0.0
(.33" + .059", - 0.00)
14.4mm
(.56")
12mm
330mm
(12.992")
12.4 mm+2.0 mm, -0.0
(.49" + .079", - 0.00)
18.4mm
16mm
360 mm
(14.173")
16.4 mm+2.0 mm, -0.00
(.646" + .078", - 0.00)
22.4mm
(.882")
SMALL-SIGNAL DEVICES
(.72")
MOTOROLA SEMICONDUCTORS
7-4
TO-92 EIA
Radial Tape Reel
or Ammo Pack
TO-92 EIA
RADIAL
TAPE REEL
OR
Radial tape reel and ammo pack of the reliable TO-92 package are the
best methods of capturing devices for automatic insertion in printed circuit
boards. These methods of taping are compatible with various equipment for
active and passive component insertion.
•
•
•
•
•
•
AMMO
PACK
Available on 360 mm Reels
Available in Ammo Pack (Fan Fold Box)
Accommodates Various Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing For Soldering
Conforms to EIA ACP Standard 1375 (RS-468)
Ordering Notes:
When ordering radial tape on reel or in ammo pack. specify the style per
Figures 3 thru 8. Add the suffix "RLR" and "Style" to the device title. i.e.
MPS3904RLRA. This will be a standard MPS3904 radial taped and supplied
on a reel per Figure 3.
Reel Information - Minimum order quantity 1 Reel!$200LL.
Order in increments of 2000.
Ammo Pack Information - Minimum order quantity 1 Box!$200LL.
Order in increments of 2000.
•
NOTES:
1. CONTOUR OF PACKAGE BEYOND ZONE "P" IS
UNCONTROLLED.
2. DIM "F" APPLIES BETWEEN "H" AND "L". DIM
"0" & "S" APPLIES BETWEEN "L" & 12.7Omm
10.5"' FROM SEATING PLANE. LEAD DIM IS
UNCONTROlLED IN "H" & BEYOND 12.7Omm
10.5'" FROM SEATING PlANE.
3. CONTROLLING DIM: INCH.
DIM
A
B
C
D
F
G
H
J
K
L
CASE 29-04
TO-226AC
(TO-921
SMALL-SIGNAL DEVICES
MLUM£TEIIS
MAX
MIN
4.32
4.45
3.18
0.41
0.41
1.15
N
P
R
S
2.42
12.10
6.35
2.04
2.93
3.43
0.39
5.33
5.20
4.19
0.55
0.48
1.39
2.54
2.66
2.66
-
0.50
INCHES
MIN
MAX
0.210
0.110
0.115
0.205
0.165
0.125
0.022
0.D16
0.019
0.D16
0.055
0.045
0.100
0.105
0.095
0.500
0.250
0.080
0.105
0.115
0.135
0.020
0.015
-
-
MOTOROLA SEMICONDUCTORS
7-5
TO·92 EIA RADIAL TAPE REEL OR AMMO PACK
Figure 1. Device Positioning on Tape
Specification
Inches
Symbol
•
Item
Millimeter
Min
Max
Min
Max
A
Component Body Height
0.170
0.210
4.32
5.33
B
Component Body Width
0.125
0.165
3.18
4.19
5.21
C
Component Body Length along Tape
0.1748
0.2052
4.44
0
Tape Feedhole Diameter
0.145
0.1693
3.7
4.3
01
Component Lead Width Dimension
0.Q16
0.022
0.41
0.56
02
Component Lead Thickness Dimension
0.Q15
0.020
0.38
0.51
Component Lead Pitch
0.0945
0.110
2.4
2.8
0
0.0985
0
2.5
0.3346
0.3741
8.5
9.5
F1, F2
H
Bottom of Component to Seating Plane
H1
Feedhole Location
H2A
Deflection Left or Right
0
0.03937
0
1
H2B
Deflection Front or Rear
0
0.03150
0
0.8
32
H3
Feedhole to Overall Component Height
0
1.2600
0
H4
Feedhole to Bottom of Component
0.7086
0.7481
18
19
H5
Feedhole to Seating Plane
0.610
0.649
15.5
16.5
'L
Defective Unit Clipped Dimension
0.3346
0.4431
8.5
11
L1
Lead Wire Enclosure
0.09842
-
2.5
-
P
Feedhole Pitch
0.4921
0.5079
12.5
12.9
P1
Feedhole Component Center to Center
0.2342
0.2658
5.95
6.75
P2
First Lead Spacing Dimension
0.1397
0.1556
3.55
3.95
T
Adhesive Tape Thickness
0.0196
0.03544
0.5
0.9
T1
Overall 'Taped Package Thickness
-
0.0567
-
1.44
T2
Carrier Strip Thickness
0.01496
0.02678
0.38
0.68
W
Carrier Strip & Adhesive Tape Width
0.6889
0.07481
17.5
19
W1
Adhesive Tape Width
0.2165
0.2841
5.5
6.3
W2
Adhesive Tape Position
-
0.Q1968
-
0.5
B5
Lead Bend from Index Hole to Center Line
'0.610
-
15.5
-
NOTES:
,. Maximum alignment deviation between leads not to be greater than 0.2 Mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (Ll does not exceed a maximum of" Mm.
3.
4.
5.
6.
7.
S.
Component lead to tape adhesion must meet the pull test requirements established in Figures 10, 11 and 12.
Maximum non-cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
Holddown tape not to extend beyond the edge!s) of carrier tape and there shall be no exposure of adhesive.
No more than 3 consecutive missing components is permitted.
A tape trailer, having at least three feed holes is required after the last component.
Splices shall not interfere with the sprocket feed holes.
MOTOROLA SEMiCONDUCTORS
SMALL-SIGNAL DEViCES
7-6
TO-92 EIA RADIAL TAPE REEL OR AMMO PACK
REEL STYLES
Figure 2. Reel Specifications
ARBOR HOLE DIA.
25.4 mm ~ 0.25 mm
COREDIA.
MARKING NOTE
SEE FIGURE 13
--=ITT
~
,,_~';';-)} ._H-'_~
!I
...., ,~
HUB RECESS
762mm± 1mm
RECESS DEPTH
I
Material used must not cause deterioration of components or degrade lead solderability.
Figure 3. Style A
Figure 4. Style B
r
ADHESIVE TAPE ON REVERSE SIDE
CARRIER STRIP
ROUNDED
SIDE
ADHESIVE TAPE
CARRIER STRIP
FLAT SIDE
FEED~_...,.._ _ _O__O_ _O_ _--,
FEED~=_ _O
_ _O__O__O
_ _ _..J
Rounded size of transistor and adhesive tape visible.
Flat side of transistor and carrier strip visible (adhesive
tape on reverse side).
Figure 5. Style E
Figure 6. Style F
ADHESIVE TAPE ON REVERSE SIDE
CARRIER STRIP
ADHESIVE TAPE
FLAT SIDE
CARRIER STRIP
000
000
Flat side of transistor and adhesive tape visible.
Rounded side of transistor and carrier strip visible (adhesive tape on reverse side).
MOTOROLA SEMICONDUCTORS
SMALL-SIGNAL DEVICES
7·7
I
TO-92 EIA RADIAL TAPE REEL OR AMMO PACK
AMMO PACK STYLES
Figure 7. Style M
LABEL
SEE FIGURE 13
Figure 9. Ammo Pack Dimensions
Figure 8. Style P
LABEL
SEE FIGURE
13
Style M ammo pack is equivalent to
Styles E and F of reel pack dependent
on feed orientation from box.
Style P ammo pack is equivalent to
Styles A and B of reel pack dependent
on feed orientation from box.
ADHESION PULL TESTS
Figure 10. Test #1
Figure 12. Test #3
Figure 11. Test #2
500 GRAM PULL FORCE
HOLOING
FIXTURE
The component shall not pull free with
a 300 gram load applied to the leads
for 3 ± 1 second.
The component shall not pull free with
a 70 gram load applied to the leads for
3 ± 1 second.
Figure 13. Marking for Reel/Ammo Pack
There shall be no deviation in the
leads and no component leads shall
be pulled free of the tape with a 500
gram load applied to the component
body for 3 ± 1 second.
Figure 14. TO-92 Tape and Real Shipping Container
CUTOUT FOR READING R E n
!ffJ
REEL MARKING LABEL
Device Type'_ _ _ _ Date Code _ __
Customer Part No. _ _ _ _ _ _ _ __
QA Lot No. _ _ _ _ _ Rev No. _ __
Purchase Order No. _ _ _ Style _ __
Source
Qty _ __
Operator _ _ Inspector _ _. DATE _ _
~
HEAVY DUTY WHITE
CARBON LAYERED'/
CORRAGATED
SHIPPING BOX
SMALL-SIGNAL DEVICES
BARCODE LABEL
EEL
O@
DESICCATOR
ANTISTATIC ZIPLOCK BAG
MOTOROLA SEMICONDUCTORS
7-8
TO-92 Tape Reel Pro Electron
TO-92
Tape Reel
and
Lead Forming
Radial tape reel and ammo pack of the reliable TO-92 package are the
best methods of capturing devices for automatic insertion in printed circuit
boards. These methods of taping are compatible with various equipment
for active and passive component insertion.
•
•
•
•
•
•
Available on 365 mm Reels
Available in Ammo Pack (Fan Fold Box)
Accommodates Various Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing for Soldering
Conforms to EIA ACP Standard 1375 (RS-468)*
r
(
*EIA ACP reel diameter 360 mm. Motorola is 365 mm.
When ordering radial type ON REEL specify the style per Figure 4. Add
the suffix to the device title, i.e. BC237ARL 1. This will be a standard
BC237A radial taped and supplied on a reel per RL 1 option.
TO-92 Lead Forming
Lead configurations conform to TO-18 or TO-5 pin circles.
Ordering Notes:
Ammo Pack and Reel information - order in increments of 2000.
When ordering Lead Formed TO-92, verify the style per Figure 8.
•
NOTES:
1. CONTOUR OF PACKAGE BEYOND ZONE "~. IS
UNCONTROllED.
2. IllM "F" APPLIES BElWEEN "H" AND "l" DIM
"0" & "S" APPLIES BElWEEN "l" & 12.70mm
10.5'" FROM SEATING PLANE. lEAD IllM IS
UNCONTROLLED IN "H" & BEYOND 12.70mm
10.5'" FROM SEATING PLANE.
., 3. CONTROlliNG DIM: INCH.
IllM
A
B
C
0
F
G
H
J
K
l
N
CASE 29-04
TO-226AC
(TO-921
SMALL-SIGNAL DEVICES
P
R
S
MllUMETERS
MIN
MAX
5.33
4.32
4.45
5.20
3.18
4.19
0.55
0.41
0.41
0.48
1.39
1.15
2.54
2.42
2.66
12.70
6.35
2.04
2.66
2.93
3.43
0.50
0.39
INCHES
MIN
MAX
0.170 0.210
0.175
0.205
0.125
0.016
0.165
0.022
0.019
0.055
0.100
0.105
0.016
0.045
0.095
0.500
0.250
0.080
0.115
0.135
0.015
-
0.105
0.020
MOTOROLA SEMICONDUCTORS
7-9
TO-92 TAPE REI;L AND LEAD FORMING
Figure 1. Taping Procedure
•
Specification
Symbol
0
F
F1
H
H1
H2A. B
H3
L
L1
P
P1
P2
P3
T
T1
T2
W
W1
W2
Item
Tape Feed Hole Diameter
Overall Component Lead Pitch
Component Lead Pitch
Height of Seating Plane
Feed Hole Location
Deflection Front or Rear, Left or Right
Feed Hole to Bottom of C
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