1987_Samsung_SFET_Data_Book 1987 Samsung SFET Data Book

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.O SAMSUNG

·c=

.

SFET
Data Book

1987

PRINTED IN KOREA
Circuit diagrams utilizing SAMSUNG and/or SAMSUNG SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD., products are included as a means of illustrating typical semiconductor applications; consequently, complete information sufficient for construction purposes is not necessarily given. The information has been carefully checked and is believed to be
entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey
to the purchaser of the semiconductor devices described herein any license under the patent rights of SAMSUNG and/or
SAMSUNG SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD., or others. SAMSUNG and/or SAMSUNG SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD., reserve the right to change device specifications.

INTRODUCTION
Samsung Semiconductor and Telecomrnuncation (SST) is a broad-Hne manufactlKer of semiconductors that range from VLSI
circuits such as memories (DRAM. SRAM. and EEPROM). microprocessors. gate arrays and programmable logic to transistors. linear circuits. CMOS logic and telecommunication products.

The SFETTM Power MOSFET FamUy extends SAMSUNG'S product line Into the area of high current. high voltage Mas
. transistors.
The SFET Family is designed to offer solutions to many design problema. Thtse products can be used as direct replacements
for industry standard power MOSFETs: Improve(j ruggedness results In components that can also be used In more demanding application such as industrial control and power supply.
TMSFET Is a trademark of Samsung Semiconductor.

· SAMSUNG SEMICONDUCTOR
DATA BOOK LIST
I. Semiconductor Product Guide
II. Transistor Data Book
;";.

Vol. 1: ,Small Signal TR
Vol. 2: Bipolar Power TR
Vol. 3: TR Pellet

III. Linear IC Data Book
Vol. 1: AudiolVideo
Vol. 2: Telecom/lndustriai/Oata Converter IC

IV. MOS Product Data Book
V. High Performance CMOS Logic
VI. MOS Memory Data Book
VII.. SFET Data Book
VIII. MPR Data Book
IX. CPL Data Book
X. Dot Matrix Data Book

D~ta

Book

TABLE OF CONTENTS
1. Introduction ............................... , ................ 9

2.
3.
4.
5.
6.

Quality and Reliability .................................. 15
Product Guide ........................................... 43
Data Sheets ..... : ........................................ 61
Test Circuits ............................................423
Package Dimensions ................................. 431

7. Samsung Sales Offices and
Manufacturer's Representatives ................ ··435

IntrodUction
. QuatUyand Reliability
Product Guide.
Data· Sh,ets
"Test Circuits
. , Package Dimensions
.

.

···.$aiu'l1sung 'S~le$ Offices' and .
.Manufacturer's Representatives

INTRODUCTION TO SAMSUNG'S SFETTM FAMILY
Since the introduction of the first Power MOSFET products in the mid-70's, these devices have emerged as widely accepted components in medium-to-high frequency power control applications. Advances in Doubled Diffused MOS (DMOS)
process and circuit design technology, as well as our understanding of how to use these devices in practical applications,
have fueled the rapid growth of these products. As MOSFET applications have grown, economies of scale possible with
high volume state-of-the-art manufacturing facilities such as Samsung's have reduced the price of these components to
the point where many new applications are possible.
Samsung, with the proprietary HDMOS (TM) process technology, has advanced the basic DMOS technology to yet another
level of performance, equivalent to the development of 1 Mb DRAM's in memory technology.
HDMOSTM (high-performance DMOS) is a combination of process innovation and design innovation capable of producing
devices with very high breakdown voltages (in excess of 1000V), the lowest on-resistance per unit chip area, lowest
capacitllllce, fastest switching time and highest energy absorption capability under unclamped inductive load svdtching.
This data book describes the complete family of Samsung power MOSFET products. The 328 parts in this family, in both
N- and P- channel, have breakdown voltages ranging from 60V up to 700V, with currents as large as 40A. Samsung is
continually expanding this family with additional products announced quarterly.

FREEDOM FROM BIPOLAR LIMITATIONS
With this extensive family of power MOSFET products, designers of power conversion systems can finally dispense with
traditional bipolar transistors and their associated constraints in terms of drive circuit complexity, reliability and switching
speeds. Table 1 summarizes the advantages of MOSFET power transistors over older bipolar products.

MOSFET

Parameter

alpolar

High (>10· D)

Medium (-10K D)

Gain

High (>10')

Medium (10"'100)

Switching Frequency

High (>100 kHz)

low «10 kHz)

Input Impedl!nce

On Resistance (Ros(on))

low

lower

Off Resistance

High

High

Voltage Capability

1OOOV and growing

1200V

Ruggedness

Excellent (2J)

Fair

Cost

Low

Max Operating Temperature

200·C

,

low
.150·C

Table 1. Bipolar vs. MOSFET Power Transistors

DRIVING THE SFET
Bipolar transistors are current controlled devices, and therefore require large base currents for operation. This large base
current produces an even larger current flowing from collector to emitter. Power MOSFETs, on the other hand, are voltage
controAed devices. A relatively small voltage applied between gate and source results in a large current flowing from drain
to source. The gate oxide electrically Isolates the gate, and results in extremely high input impedance and low gate input
leakage currents.
The result of these fundamental differences in device operation is that MOSFETS utilize much Simpler drive circuits, and
hence lower system cost in many applications.
Power MOSFETs are majority carrier devices, and therefore do not suffer from minority carrier storage time limitations as
do bipolar transistors. As a result, MOSFETs offer much better switching performance (up to 1 MHz and beyond) than do
bipolar transistors (which are limited to 20 KHz and below).

c8SAMSUNG SEMICONDUCTOR

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INTRODUCTION TO SAMSUNG'S SFETTM FAMILY
Unlike bipolar transistors, Power MOSFETs do not ,suffer from secondary breakdown, This is frequently a'major limitation
in the power handling capability of bipolar power transistors. The insensitivity to second breakdown is due to the 'negative
temperature coefficient for carrier mobility in POWer MOSFETs, As current increases, the device heats up. However, unlike
bipolar transistors, carrier mobility decreases with increasing temperature, acting to reduce any further current increase., This
self-limiting mechanism reduces the susceptibility of MOSFETs to localized heating that can lead to device destruction.

CMOS COMPATIBLE PROCESSING
,

'

Some key features of HOMOS technology includes the use of CMOS local oxidation techniques for definition of active area,
exclusive use ,of ion implantation to introduce dopants, the use of multiple diffused guard rings and polysilicon plates for
breakdown voltage enhancement and built-in redundl!l1cy, and a tight geometry octagonal cell design. Figure 1 compares
conventional OMOS technology and HOMOS technology with local oxidation.
Conventional approaches for groWing field oxide in power MOSFETs result in very thick initial oxide of one micron, causing
problems in pattern definition and contact meialization. With HOMOS technology, an alternate approach is used for defining
the field oxide that is compatible'with high dens!ty VLSI CMOS processes, This alternate approach is local oxidation.

Samsung HDMOS

Regular DMOS

~,

I"':!::Ph"O~to""!R:"e~si""!.t';l
FOX

1r.'P~h-'ot~o~Re~.~i.t~U
Field OXide

)N-5i

A

r-X=6~-I

~~~FO~X""';I
_

N-,5i

1,.,

(T

Thin Nitride 0 1,.,

B

Photo Resist

Thin OXide~~t======~==:;:
~~
A~i
,

__
N_-_._5i_______________

I-X=4~-I

--1.

,['FOXJ

I-X=4~-t'
r===J::::

C:lt~r ___Etch-,--_.f;::=,;:=r=1====~:=\
.f1 N 5',
(
)

After

B

)

Figure 1: Conventional DMOS vs. HOMOS with Local Oxidation

By depositing and patterning a thin layer of Silicon nitride, which selectively masks the silicon during oxide growth, the HOMOS
features are more precisely defined. There is no undercutting of thick field oxide, and the resulting structure is more planar.
This planar structure improves photOlithographic resolution at other pOints in the process, and also reduces problems with
metalization coverage. In addition, Since one less etching sequence is required to pattern the thick field oxide, less chance
exists of etch-induced pinholes in the field oxide. These pinholes reduce yields and device reliability.
In HOMOS, all impurities are introduced by ion implantation exclusively.' This pe~its'precise dopant control, eliminating variation
in junction depths of both the main blocking junction and heavily doped source. Moreover, precise junction control allows
the use of shallow junctions even in devices with blocking voltages well over 700V.
In N-channel devices, the main p-type junction well is defined by a unique double ion implant which significantly reduces
parasitic bipolar tranSistor action. One implantation defines the p-well; the other is a heavier dose implant to create a central
region of p+ in each cell, This reduces the sheet resistance of the well and prevents 'the parasitic NPN bipolar transistor
from turning on.
'
, This important advantage allows cell dimensions to be reduced to less than 12 microns, and cell densities to increase from
1 mllion to 2 million cells per square inch,
"

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SAMSUNG SEMICONDUCTOR

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INTRODUCTION TO SAMSUNG' S SFETTM FAMILY

Gate Oxide

o
Figure 2: Extensive Use of Ion Implantation

UNIQUE GUARD-RING DESIGN
HDMOS employs a unique guard ring design to achieve high blocking voltages with a planar structure without consuming
large amounts of silicon area. A sequence of multiple self-aligned guard rings is used so that if a defect shorts out any pair
of rings, the design has sufficient redundancy to ensure the rest of the rings will hold the necessary blocking voltage. Figure
3 shows a cross section of the HDMOS guard ring structure.
In addition, to improve surface stability of the field-oxide surfaces between the rings, a polysilicon layer is deposited at the
gate of the HDMOS device. This poly layer is used as a field plate in reducing the electrical field at the edges of the die.
A proprietary metal termination design is used to clamp the potential at the edge of the die. This is done so no depletion
lines will reach the scribe area and create breakdown voltage variation due to surface effects in the scribe.

Active Ares

p+

Figure 3: Multiple Self-aligned Guard Ring Structure

UNIQUE CELL DESIGN
Another key feature of HDMOS is an elongated octagonal cell design. This design minimizes parasitic NPN transistor base
resistance, resulting in MOSFETs that are capable of withstanding high levels of inductive energy dissipation in inductive
load switching without parasitic bipolar transistor tum-on.

HOMOS BEN FElTS FO.R DESIGNERS
For designers of power systems, HDMOS devices offer high performance under even exceptionally hostile circuit conditions. The exceptionally low input capacitance, as much as 35% lower than that of comparable devices, and low on-resistence
are key to these performance advantages.

RUGGEDNESS
Unclamped inductive withstand energies of more than 2 J have been achieved for 700V (eA) devices, and 1.3 J for 500V
devices (12A). Typical withstand energy levels for comparable devices is in the millijbule range. In practical terms, the strength
of the Samsung devices allow a power control design engineer to be less concerned about stray inductance and voltage
tranSients that can destroy conventional power MOSFETs, even in circuits which use voltage clamping techniques.

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SEMICON~UCTOR

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INTRODUCTION TO SAMSUNG'S SFETTM FAMILY
The ability of a power MOSFi!:T to withstand high levels of inductive energy is not only a useful performance characteristic.
but is also a measure of process quality. Poor process control leads to localized current crowding during Inductive turn-off.
.
which can' lead to device· failure during unclamped inductive load conditi~ns.
Inductive load tests are used as a process control tool during final test. Samsung has found that test yields on conventional
parameters such as breakdown voltage and leakage current were directly related to the results from inductive energy tests.
Samsung tests 100% of its devices to a minimum inductive energy. and can select values that are specified by the customer.
An example is a two·phase step motor driven in the unipolar mode. The traditional 'solution is to clamp the peak Vos that
the power transistors see to below BVoss with an active or passive clamp circuit or snubber capable of dissipating 12.5W.
Even with the best motors. however. there is still some leakage reactance that is not coupled. When the tranSistor is turned
off. the energy stored in the leakage inductance must be dissipated by the transistor. resulting in avalanche breakdown. For
a typical motor. this leakage reactance might be 50,..H. resulting in an inductive energy of 625,..J at 5A. Dissipation of the
inductive energy in the ~OSFET appears to be a very useful design approach. 625,..J is well below the HOMOS power
device's unclamped energy·handling capability and 12.fjW of additional dissipation can be handled with proper thermal design.

FASTER SWITCHING SPEED
Lower CISS (Gate Input Capacitance) and CRSS (Miller Effect Capacitance). coupled with improved gate bus layout features.
results in a 2-1 decrease in switching time. turn-on and turn-off delay times. as well as current and voltage rise and fall times.
This speed improvement means higher frequency and more efficient operation in switching mode. For the designer. it also
means reduced gate drive dissipation and reduced drive circuit complexity. The Miller effect interaction CRSS drops by
30%-a major benefit for gate drive circuit designs.
HOMOS boosts dV/dt capability by providing a betler base-emitter short and reduced Cjc on the parasitic bipolar transistor.
As a result. the designer can actually take advantage of the higher speed switching without compromising device reliability
due to parasitic dV/dt turn on.

APPLICATION AREAS
With the availability of rugged. reliable HOMOS power MOSFET designers have "bullet proof" 'solutions for even the moat
difficult power system applications. including flyback and forward converters. and power factor correction in switch-mode
.
power supplies (SMPSj.
HOMOS devices can reliably satisfy the requirements for flyback and one-transistor forward converters operating off 240
Vac lines. and can extend the power handling capability of these d!lsigns up to 1000W.
Designers using these devices have no need to resort to exotic schemes such as transformer designs with 2-1 clamp to
primary turns ration (and a 340 percent maximum duty cycle) in order to overcome the limitations of lower voltage devices.
The two-transistor forward converter has become a very popular. topology for 240 Vac operation. and 500V HOMOS devices
provide a reliable solution. However. in most cases. in addition to paying for two devices instead of one. tlie real issue is
driving the upper leg since the gate drive must be at a potential which is close to the high voltage source.
T~e

requirement for this second gate drive operating at several hundred volts above ground potential greatly increases the
cost and complexity of the two transistor circuit. The deSign time Br\d cost of producing an equivalent supply would be considerably lower if it could be done reliably with a one tranSistor implementation. This is exactly what a HOMOS Power MOSFET
provides.
Another area that lends itself well to HOMOS solutions in SMPS is power factor corrections. For some time. this has been
an important issue in military applications. and power correction solutions are now trickling down into the commercial arena
as systems become more sophisticated and system interaction' and power distribution problems become mOre acute.
A typical architecture for such a system utilizes a boost-converter preprocessor followed by a conventional dc/dc converter.
The rectified input voltage is used as a current reference signal to command sinusoidal line current from the preproCessor.
The input bridge rectifier ':unfolds" the half-sine pulses to provide very.clean (power factor greater than 0.9) sinusoidal input
line current. T!1e dc output voltage can simultaneously be regulated. simplifying the remainder of the power-supply deSign.
This application requires a 450-500 Vdc bus voltage and a 600-BOOV power MOSFET. Conducted line emissions standards will get only more stringent as time goes on. The higher voltage HOMOS devices will be needed for the new power
supply and motor control circuit designs.

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SAMSUNG SEMICONDUCTOR

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QUALITY and RELIABILITY
INTRODUCTION
Samsung's SFET Power MOSFET products are among the most reliable in the industry. Extensive qualification, monitor,
and outgoing product programs are used to scrutinize all areas of product quality and reliability. Additionally, stringent controls and subsequent supporting documentation are applied to every wafer fabrication and assembly lot.
Actual and predicted data are presented, and show the devit:es as a whole to have an impressive FIT" rate of 2 for standard
lifetest stress conditions.

RELIABILITY THEORY
This section is chiefy concerned with reliability. However, quality will be mentioned briefly, as reliability and quafrty are strongly
·interrelated.
The first concern of a customer is with the quality of incoming product. For this reason, Samsung utilizes tight outgoing .
quality procedures to assure all customers receive quality products. Details are outlined in another section. Additionally,
lot-by-Iot stressing, regular reliability monitors, exhaustive product qualification testing, and rigorous in-line process controls
(details in another section) are all utilized to guarantee Samsung products are of the highest grade. Quality is Sarnsung's
number one priority.

"NOTE: FIT=Failures In Test, or failures in one billion, or 10', device-hours.

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QUALITY and RELIABILITY
QU.ALlTY AND RELIABILITY PROGRAM
Three topics of prime concern regarding Samsung's quality programs are detailed below: .
A. Qualification Program
B. Monitor Program
C. OutgOing Quality Program

QUALIFICATION PROGRAM
In order for the SFET f~mily to be qualified for mass production purposes, extensive reliability information has been compiled. The purpose was to simulate all relevant user conditions, via accelerated and standard methods, prior to customer
shipments. In this way, the processing and design of SFET devices are "wrung-out", and reliability strongly established,
to ensure all product is of the highest quality.
The stresses used for qualification are detailed in another section (Reliability Test Results). Very stringe':1t LTPD levels were
applied to the various tests to guarantee a product quality level in the upper tier of the Power FET market.

MONITOR PROGRAM
Twice per year devices duplicate their qualification tests to give long-term reliability data on SFET technology. In this way·
histrical data is collected and analyzed over all part types and thus assures the customer of ongoing device quality. Not
only is the product therefore verified at its initial stages, but trends are noted to track continual process stability. These
results are summarizelfin reliability reports issued periodically by Samsung Semiconductor.

OUTGOING QUALITY PROGRAM
All wafer lots are required to psss a "QC-Reliability-Gate" prior to product shipment. The purpose is to track "Iot-by-Iot"
quality and reliability to catch any potential product anomaly at the factory site.
The customer can then expect only quality material to be delivered from Samsung. Any lot that fails the procedure listed
below is scrutinized heavily, to make sure that corrective action takes place immeqiately.,
By paying such close attention to every lot, product costs are kept at a minimum. Samsung's customer return rate is extremely low," which is where our tough outgoing policy is most powerful. Such a tight clamp to protect our customerr. is
how we can assure that all Samsung's products are released with the highest- confidence level possible
Product Final Test

Rei. Sample Receipt
Lot on Hold

•

. Cause Analysis
......_ - l ._ _., 22 units

22 units
(5 units: correlation units)
L~R~e!:je,:ct:""'_f-.c:---:-_ _ _ _ _~==::r--'" Time=48 hours
Release Lot
Marking
Warehouse Incoming Inspection

Warehousing

Ship

POWER FET OUTGOING FLOW

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QUALITY and RELIABILITY
RELIABILITY AND PREDICTOR THEORY
RELIABILITY
Reliability can be loosely characterized as long-term product quality.
There are two types of reliability tests: those performed during design and development, and those carried out in production. The first type is usually performed on a small sample, but for long periods or under very accelerated conditions to
investigate wearout failures and to determine tolerances and limits in the design process. The second type of tests is performed periodically during production to check, maintain, and improve the assured quality and reliability/levels. All reliability
tests performed by Sarnsung are under conditions more severe than those encountered in the field, and although accelerated,
are chosen to simulate stresses that devices will be subjected to in actual operation. Care is taken to ensure that the failure
modes and mechanisms are unchanged .

. FUNDAMENTALS
A semiconductor device is very dependent on its conditions of use (e.g., junction temperature, ambient temperature, voltage,
current, etc.). Therefore, to predict failure rates, accelerated reliability testing is generally used. In accelerated testing, special
stress conditions are considered as parametrically related to actual failure modes. Actual operating life time is predicted
. using this method. Through accelerated stresses, component failure rates are ascertained in terms of how many devices
(in percent) are expected to fail for every 1000 hours of operation. A failure rate versus time of activity· graph is shown
below (the so-called "bath tub curve").
A(t)

I-__

......______

~

rate

...;.~

_____

~

__

Reduction due to

......preventjve maintenance

....,~

m=1

- Semi~'":tot;;- ... ...
...

Specified

Failure Rate

(m:=.O 5
r Devices . "'0.95).

Intial

Random Failure period

Wear-Out Failure period

Failure period

Figure 4: Failure Rate Curve ("Bath Tub Curve")
During the initial time period, products are affected by "infant mortailiy", Intrinsic to all semiconductor technologies. End
users are very sensitive to this parameter, which causes early assembly/operation failures of their system. Periodically Samsung reviews and publishes life time results_ The goal is a steady shift of the limits as shown below.

A: failure rate

Figure 5: Fallare Rate

=8

SAMSUNG SEMICONDUCTOR

19

I

QUALITY and· RELIABILITY
.
[

ACCELERATED HUMIDITY TESTS
To evaluate the reliability of products assembled in plastic packages, Samsung performs accelerated humidity stressing,
the Pressure Cooker Test (PCT) and Wet High Temperature Life Test (WHOPL).
.
such

as

Figure 6 shows 1!01118 results obtained With these tests, which illustrate the improvements in reCent years. These improvements
result mainly from the introduction of purer molding resins, new process methods, and improved cleanliness

.

99.9
99

,

I

90.

lI!
3
~

!z

w

~
W

S
j

(,

~::.

::>
0

"

70.
50.

1982

. 3D

'20.

1985

10.

5
./ ./

~/

1
D. 5

D. 1

10.

:,<

10.'

'\.

HotJRS

Figure 6: Improvement In Humld'ity Tests

ACCELERATED TEMPERATURE TESTS
, Accelerated temperature tests are carried out at temperatures in a range from 75 0 C to 200 0 C for up to 1 000 hours. These
tests allow Sarnsung to evaluate reliability rapidly and economically, as failure rates are strongly, dependent on temperature.
The validity of these tests is demonstrated by the good correlation between data collected in the field and laboratory results
obtained using the Arrhenius model. Figure 7 shows the relationship between failure rates and temperatures obtained with
thiS model.'
/

Iffl
ff

cf.'~)' ~;J/
0."<'

~

l~1
~ip"
'l~~~
;Jj

fJl

'd'"

(JFFifJI~
LID~LI~
~~
"H'"

:ffJ

~ I
25

,40.

60.

I

80. l~D 125 ,150. 180. 20.0. rO(c)

Figure 7: Fallure;Rate versus Temperature

, c8SAMSUNG

SEMICONDUcro~

20

QUALITY and RELIABILITY
FUNDAMENTAL THEORY FOR ACCELERATED TESTING
The accelerated life test is powerful because of "its strong relation to failure physics. Arrhenius model. which is generally
used. is explained below.
'

1. Arrhenius model
This model can be applied

to accelerated Operating life Tests and uses absolute (Kelvin) temperatures.

L=A+EalK'Tj
L : lifetime
A : Constant
Ea: Activation Energy
Tj : Absolute Junction temperature
K : Boltzman's constant
If life 11 and L2 correspond to T1! T2:

I

(..1.. _ 2.. )}

L1 =L2 exp (Ea
K T1

T2

,

/

L1

Uletime(L) I-'L:::2~--,r

T1

T2

Temperature lIT 10 K")

The actual junction temperature should be used and can be computed using the following relationship:
Tj=T.+(PX6ja)
Where Tj=Junction Temperature.
Ta=Ambient temperature
P=Actual power consumption
6ja=Junction to Ambient thermal resistance (typically 100 degrees celsius/watt for a 16-Pin PDIP).

2. Activation Energy Estimate
Clearly the choice of an appropriate activation energy, Ea, is of pai'amount importance. The different mechanisms which
could lead to circuit failure are characterized by specific activation energies whose values are published in the literature.
The Arrhenius equation describes the rate of many processes responsible for the degradation and failure of electronic com·
ponents. It follows that the transition of an item from an initially'stable condition to a defined degraded state occura by a
thermally activated mechanism. The time tor this transition Is given by an equation of the form:
MTBF=B EXP (EalKT)
MTBF=Mean time between failures
B
=Temperature-Independent constant
MTBF can be defined as the time to suffer a device degradation. The dramatic effect of the choice of the Ea value can
be seen by plotting the MTBF equation. The acceleration effect for a 125°C device junction test with respect to 70'e
actual device junction operation is equal to 1000 for Ea=leV and 7 for Ea=0.3eV.

c8SAMSUNG

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QUALITY and RELIABILITY
Some words of caution are needed about published values of Ea:

A. They are often related to high-temp tests where a single Ea (with high value) mechE!nlsm has become dominant.
B. They are specifically related to the devices produced by that supplier (and to its technology) for a given period of time.
C. They could be modified by the mutual action of other stresses (voltage. mechanical. etc.)
D. Field deVice-application conditiOns shOuld be conSidered.
(Activation energy for each failure mode)
Faill.!re Mechanism

Ea

Contsmination'
Polarization
Aluminum Migration
Trapping
Oxide Breakdown
Silicon Defects

1"'1.4 eV
1 eV
0.5"'1 eV
1 eV
0.3 eV
0.3"'0.5 eV

THE CORRECT PROCEDURE

ACCELERATED TEST - - - - ,

1
CALCUATED AT TEST CONDITIONS
AND WITH A CERTAIN CONFIDENCE
LEVEL

I

.

FAILURE ANALYSIS

CHOICE OF Ea ~--. CALCULATED AT OTHER
TEMPERATURES

1.

I

°1

4

10

1 eV

V

I

Iloaevi

J

Acceleration
Factor

U

.1

~

J

L
~

V
10

II

,

/

0.4"9
./

L .L 0.3~

) )
1

lL

0.5iL':

It"

~

/'

~ ~ ~V

10

./ V
:/'

,I.

"f#

V

10

250 200175150125 100

75

50

.

TI C)

Junction Temperature

Figure 8: Life HOllrs

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SAMSUNG SEMICONDUCTOR

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QUALITY and RELIABILITY
Failure Rate Predication
Accelerated testing defines the failure rate of products. By derating the data at different conditions. the life expectancy
at actual operating conditions can be predicted. In its simplest form the failure rate (at a givE1n temperature) is:

FR=~
DH
Where FR=Failure Rate
N =Number of failures
o =Number of components
H =Number of testing hours
If we intend to determine the FR at different temperatures. an acceleration factor must be considered. Some failure modes
are accelerated via temperature stressing based upon the accelerations of the Arrhenius Law.
,"or two different temperatures:
F.R (T1)=FR (T2) exp {Ea (~- ~)}
K T2
T1
FR (T1) is a point estimate. but to evaluate this data for an interval estimate. we generally use X' (chi square) distribution.
An example follows:

Failur,e Rate Ela!uation
Unit: %/1000HR
Dev. x Hours
at 12SoC

Fail

1.7X 10'

2

Failure Rate at 60% Confidence Level
Point Estimate
0.18

I
I

85°e
0.0068

I
I

70 0 e
0.0018

I
I

55°e
0.00036

The activation energy. from analysis. was chosen as 1.0 eV based upon test results. The failure rate at the lower operating
temperature can be extrapolated by an Arrhenius plot.

c8SAMSUNG SEMICONDUCTOR

QUALITY and RELIABILITY
RELIABILITY TESTS
Samsung has established a comprehensive reliability program to monitor and ensure the ongoing reliability of the SFET Power
MOSFET family. This program involves not only reliability data collection and analysis on existing Parts, but also rigorous
in-line quality controls for all products.
Listed below are details of tests' performed to ensure·that ~anufactured product continues to meet Samsung's stringent
quality standards. In-line quality controls are 'reviewed extensively in later sections.
The tests run by the Quality Department are accelerated tests, serving to'model "real world" applications through boosted
temperatures, voltages, and/or humidities. Accelerated conditions are used to derive device knowledge through means quicker
than that of typical application situtations. These accelerated conditions are then used to assess differing failure rate mechanisms
that correlate directly with ambient conditions.
FOllowing are summaries of various stresses (and their conditions) run,by Sa{Tlsurig on SFET devices.

High Temperature Reverse Bias (80% max Vos, VGs=OV, 150°C, static)
For this test, device integrity is' checked through stressing of the main blocking junction at an elevated temperature and
voltage. Overall product stability is investigated tnrough leakage current monitoring; low leakage indicates good integrity.

High Temperature Gate Bias (VGs=20V, Vos=OV, 150°C, statiC) .
HTGB is utilized to analyze gate oxide and junction stability over extended periods of accelerated temperatures and voltages .
. This is crucial as it is used to establish integrity.at a point of high device stress.

Intermittent Operating Life

(PMAJ(, 25°C,

2 min' on/2 min off)

This test is normally applied to scrutinize die bond thermal fatigue. A stressed device undergoes ~ "on" cycle, where there
is thermal heating due to power dissipation, and an "off" cycle, where, there is thermal cooling due tp lack of inputted power.
Die attach (between die and package) and bond attach (between wire and die) are the critical areas of conCElrn.

Wet High Temperature .Reverse Bias (80% max Vos, VGs=OV, 85°C, 85% R.H., static)
Wet high temperature reverse bias test is used to accelerate failure mechanisms by applying static bias on alternate pins'
at high temperature and humidity ambient (85°C/85% R.H.). This test checks for resistance to moisture penetration by
using an electroly1ic principle to aCcelerate corrosive mechanisms:

Pressure Cooker Test (Unbiased, 121°C, 15 PSIG, 100% R.H.)
The Pressure Cooker Test checks for resistance to moisture penetration. A highly pressurized vessel is used to force water
(thereby promoting corrosion) into packaged devices located within the vessel. .

High Temperature Storage (Unbiased, 150°C)
High Temperature Storage is utilized to test for both package and die weaknesses. For example, sensitivities to ionic con,
'. tamination and bond integrity are closely scrutinized.

Temperature Cycling (Unbiased, -65°C to +150°C, air)
This stress uses a chamber with alternating temperatures of - 65 ° C and + 1 50 ° C (air ambient) to thermally cycle devices
within it. No·bias is applied. The cycling checks for mechanical integrity of the packaged device, in particular bond wires
and liie attach, along with metal/polysilcon microcracks.

Thermal Shock (Unbiased, -65°C to + 150°C, liquid)
This stress uses a chamber with alternating temperatures of - 65 o.C to + 150° C (liquid ambient) to thermally cycle devices'
within it. No bias is applied. The cycling is very rapid, and primarily checks for die/package compatibility.

c8

SAMSUNG SEMICONDUCTOR

24

QUALITY and RELIABILITY
RELIABILITY TEST RESULTS
This section is divided into two parts-actual and predicted test results. Actual test results are those derived via accelerated
stressing done by the ac Department. Predicated test results are calculated .by taking actual test results and de-rating them
using statistical and mathematical models to determine device performance in "real-time" user conditions.
ACTUAL TEST RESULTS

Stress
HTRB

Conditions

MTBFO[years)
Failure Rate
Number of Number of Device Number of
(See Predicted (See Predicted
Devices
Hours/cycles
Failures
Test Results)
Test Results)

80% max. Vos.
VGS=OV. 150·C
Static

990

988.668

9

4 FIT

28.617

VGS=20V.
Vos=OV. 150·C
StatiC

990

990.000

2

1 FIT

114.469

Pmax.
2min on/2 min off
25·C.

342

342.000

2

0.91%/lk Hrs

80% max. Vos.
VGS=85·C.
85% R.H .• StatiC.

342

341.000

2

PCT

121 ·C. 15 PSIG.
100% R.H.

240

23.040

0

3.99%/lk Hrs

HTS

150·C

684

684.000

1

1 FIT

Temperature -65·C to 150·C.
Cycle
air-to-air

456

273.200

1

0.74%/lk Cyc

15.5

-65·C to 150·C
liquid-to-liquid

228

136.800

0

0.672%/lkCyc

17.0

HTGB

IOL

WHTRB

Thermal
Shock

43 FIT.

12.6

2.662

2.9
114.469

Note: MTBF Is defined as i'Mean Time ~etween failures". and is the mathematical inverse of FIT.

c8SAMSUNG SEMICONDUCTOR

25

QUALITY and RELIABILITY
Predicted Test Results
The Arrhenius Equation, which is reviewed in another section of this chapter, can be applied to derive typical "user-condition"
device failure rates.
Stess: HTRB
988,668 device-hours at 150°C
9
failures
Average activation energy = 1.0 eV

Stress: HTGB
990,000 device-hours at 150°C
2
failures
Average activation energy- 1.0 eV

De-rating to user-conditions yields:

De-rating to user-conditions yields:

SSOC Operation

SliOC Operation

Equivalent
Device Hours

% Failures per
1000 Hours
(60% UCL)

2.79X10'

0.0004

FITs

MTBF
(Years)

Equivalent
Device Hours

4

28,617

2.80 X 10'

70 G C Operation

Equivalent
Device Hours

0.0001

FITs

MTBF
(Years)

1

114,469

FITs

MTBF
(years)

5

22,894

FITs

MTBF
(Years)

34

3,367

70°C Operation
% Failures per
1000 Hours
(60% UCL)

5.94 X 10·

0.0017

,
FITs

MTBF
(Years)

17

6,733

90·e Operation

Equivalent,
Device Hours

% Failures per
1000 Hours
(60% UCL)

Equivalent
Device Hours
5.95 X 10· .

% Failures per
1000 Hours
(60% UCL)
0.0005

90 G C Operation ,
% Failures per
1000 Hours
(60% UCL)

9.19 X 10'

0.0113

I

FITs

MTBF
(Years)

Equivalent
Device Hours

113

1,013

9.21 X 10'

0.9064

0.0034

Stress: WHTRB'
341,000 device-hours
2
failures

Stress: IOL
342,000 device-hours
- - 2 - - failu~es
% Failures per
per 1000 Hours.
(60% UCL)

% Failures per
1000 Hours
(60% UCL)

FITs

MTBF
(Years)

Equivalent
Device Hours

% Failures per
1000 Hours
(60% UCL)

FITs

MTBF
(Years)

9064

12.6

7.20 X 10'

0.0043

43

2,662

-

• Peck and Zierdt's Model is applied for failure rate prediction. Accelerated conditions are de-rated to 55°C and
50% R.H. conditions.'

•

c8

SAMSUNG SEMICONDUCTOR

26

QUALITY and RELIABILITY

Stress: PCT
23,040

o

Shress: HTS
684,000 device-hours at 150°C
1
failures
Activaiion energy- 1.0fN

device-hours
failures

% Failures per
per 1000 Cycles
(60% UCL)

FITs

MTBF
(Years)

3.9905

39,905

2.9

Stress: 'Temperature Cycle
273,200 device-cycles
_---'-'1'--_ failures

55°C Operation
% Failures per

Equivalent
Device Hours

1.93 X 10'

1000 Hours
(60% UCL)

0.0001

FITs

MTBF
(Years)

1

114,469

FITs

MTBF
(Years)

5

22,894

70·C Operation

% Failures per
per 1000 Cycles
(60% UCL)

FITs

MTBF
(Years)

0.7394

7,394

15.5

% Failures per
Equivalent
Device Hours

4.11 X 10'
Stress: Thermal Shock
136,800 device-cycles
o
failures

1000 Hours
(60% UCL)

0.0005

90·C Operation
. % Failures per

% Failures per
per 1000 Cycles
(60% UCL)

FITs

MTBF
(Years)

0.6720

6,720

17.0

Equivalent
Device Hours

' 1000 Hours
(60% UCL)

FITs

MTBF
(Years)

6.36 X 10"

0.0032

32

3,577

•

=8

SAMSl,JNG SEMICONDUCTOR

27

•

QUALITY and RELIABILITY
PROCESS CONTROL·
GENERAL PROCESS CONTROL
The general procesS flow in Samsung is stiown in Figure 9. This illustration contains the standard process flow fn;)m incoming parts and materials to customer shipment.

Acceptance inspection (according to acceptance inspection plan)

Process quality control
• Check of each condition by process quality control procedures
• Process inspection
• Lot control
• Equipment calibration and maintenance

100% Electrical Die Sorting

Process Quality Control and screening of infant mortality defects
.• Thermal screen
• Mechanical screen
• Burn-in screen

Test

100%· package sorting of electrical characteristics and marking

Reliability monitoring
1. PRT (Process Reliability Testing)
2. DRT (Device Reliability Testing) .

• High Temperature Reverse Bias
• High Temperature Gate Bias .

Finished Goods
Incoming
Inspection

• Envirorimental test
• Ute Test.

Sampling Inspection·
• Dimensions
• Visual
. • Electrical characteristics
• Periodic Cailbration of measuring equipment

Stock cO{1trol
• Age control .

Anlshed Goods

Sampling Inspection (when applicable)

Outgoing
Inspection

Shipment

Figure 9: General Proce.. Flow Chert

c8SAMSUNG SEMICONDUcroR .

28

QUALITY' and RELIABILITY
WAFER FABRICATION
Process Controls
The Quality Control program utilizes the following methods of control to achieve its previously stated objectives: process
audits, environmental monitors, process monitors, lot acceptance inspections, and process integrilty audits.

Definitions
The essential method of the Quality Control Program is defined as follows:
Process. audit-Performed on all operations critical to product quality and reliability.
Environmental monitor-Monitors concerning the process environment; i.e., water purity, temperature, humidity, particle
counts.
ProcesS monitor-Periodic inspection at designated process steps for verification of manufacturing inspection and
maintenance of process average. These inspections provide both attribute and variable data.
4. Lot acceptance-Lot-by-Iot sampling. This sampling method is reserved for those operations deemed as critical and require special attention.

1.
2.
.
3.

Environmental Monitor
Process

Control Item

Clean Room

• Temperature
• Humidity
.• Particle
• Air Velocity

0.1. Water

•

Particle
• Bacteria
• Resistivity

Spec. limit

Insp. Frequency

• IndiVidual Spec.
• Individual Spec.
Individual Spec.
• Individual Spec.

24
24
24
24

•
•
•

24 Hrs ..
Weekly
24 Hrs.

•

•

5 ea/50ml (0.81A)
50 colonies/100ml (0.45,..)
Main (Line): More than
16 Mohm-cm
Using point: More than
14 Mol)m-cm

HI's.
Hrs .
Hrs.
Hrs.

24 Hrs.

"Instruments
• FMS (F~lity Monitoring System) HIAC/ROYCO
• CPM (Central Partlole Monitoring System-Dan Scientific)
• Liquid Dust Counter Etch Rate
• Filtration System for Bacterial check
• Air Particle counter
• Air Velocity meter

Process Monitor
Process

c8

Control Item

Spec. Limit

InsP_ Frequency

Photo

• Aligner N, Flow Rate
• Aligner Vacuum
•.Aligner Air
• Aligner Pressure
• Aligner IntenSity
• Coater Soft Bake
Temperature
Vacuum

•
•
•
•
•
•
•
•

Individual
Individual
IndiVidual
Individual
Individual
Individual
Individual
Individual

Spec.
Spec.
Spec.
Spec.
Spec.
Spec.
Spec.
Spec.

Once/Shift
Once/Shift
Once/Shift
Once/Shift
Once/Shift
Once/Shift
Once/Shift
Once/Shift

Etch

• Etchant Temp.
• Etch Rate
• Spin Dryer N, Flow
RPM
• Hard Bake Temp.
N, Flow

e
•
•
•
•
•

Individual
Individual
Individual
Individual
Individual
Individual

Spec.
Spec.
Spec.
Spec.
Spec.
Spec.

Once/Shift
Once/Shift
Once/Shift
Once/Shift
Once/Shift
Once/Shift

SAMSUNG SEMlCONDUcrOR

29

••

QUALITY and RELIABILITY
Process Monitor (Continued)
Process

Control Item

, Spec. Limit

Insp. Frequency

Thin Film

• Cooling Water Temp. ,
• Thickness

•

26±3°C
• Inf;lividual Spec.

Once/Shift
Once/Shift

CVD

• Pin Hole
• Thickness

•

Individual 'Spec.
• Individual Spec.

Once/Shift
Once/Shift

Diffusion

• Tube Temp.
• C-V Plot Run
Tube
• Sheet Resistance
• Thickness

•
•
•
•
•

Once/Shift
Once/Shif,t
Once/l0days
Once/Shift
Once/Shift

Individual
Individual
Individual
-Individual
Individual

Spec.
Spec.
Spec.
Spec.
Spec.

Raw Material Incoming Inspection
1. Mask Inspection
Defect Detection

• Pinhole & Clear-extension
• Opaque Projections &
Spots
• Scratch/Particle/Stain
• Substrate Crack/Glass-chip
• Others

•

Run-out'
(X-V Coordinate)
• Orthogonality
., Drop-in Accuracy
Die FitfRotation

Registration

•
Critical
Dimension

• Critical Dimension

•

All Masks

•

Defect Size" 1 .5,..m
Defect Density
",O.124EAlcm 2

±0075,..m
20%

•

±0.75,..m
±0.50,..m
±0.50,..m

All New Masks

Purchasing Spec.

All Masks

• Instrument
• Auto- mask inspection system. for defect-detection (NJS 5MD-44)
• Comparator for registration (MVG 7X7)
., Automatic linewidth measuring system for CD (MPV-CD)
2. Wafer Inspection
Insp. Items

Sample

Structural

• Crystallographic Defect

All lots

• Sirtl Etch

Electrical

• Resistivity
• Conductivity

All lots

•

• Thickness
Diameter
• Orientation
• Flatness

All lots

TTV; NTV, Epi-thickness

• Surface Quality
• Cleanliness

All lots

Purpose

Dimensional

Remarks

Monitor Water

•
I

Visual

TIR (FPD)
local Slope
Purchasing'Spec.

• Instrument
• 4 point probe for resistivity (Kokusai VR-40A, Tencor sonogage, ASM AFPP)
• Flatness measuring system (Siltec)
• Epi. layer thickness gauge (Oigilab, FTG-12 .. Qualimatic S-l 00)
• Automatic Surface Insp. System (Aeronca Wis-150)
• Non-contact thickness gauge (ADE6034)

c8

SAMSUNG SEMICONDUCTOR

30

QUALITY and RELIABILITY
In-Process Quality Inspection (FAB)
1. Manufacturing Section
Proce•• Step

I

Frequency

Proce•• Controlln.p.

Oxidation

Oxide Thickness

All Lots

Diffusion

Oxide Thickness
Sheet Resistance
Visual

All Lots
All Lots
All Lots

Photo.

Critical Dimension
Visual
Mask Clean Inspection

All Lots (MOS)
All Lots
All Masks with Spot Light (MOS)
or Microscope (BIP!.

Etch

Critical Dimension
Visual

All Lots
All Wafers

Thin Film

Metal Thickness
Visual

All Lots
All Lots

Ion Implant

Sheet Resistance

AlI,Lots (Test Wafer)

Low Temp.
Oxide

Thiciknes6

All Lots

Visual

All Lots

E·Test

Electrical Characteristics

All Lots

Fab. Out

Visual

All Wafers

2. FAB,

ac Monitor/Gate

·Proce•• Step

FAB, QC In.p.

Frequency

OXidation

Oxide Thickness
C·V Test on Tubes
Visual

Once/Shift
Once/10 Days and After CLN.
Once/Shift

Diffusion

Oxide Thickness
C·V Test on tubes
VISual

Once/Shift
Oncel1 0 Days and' After CLN.
Once/Shift

Photo

Critical Dimension
Visual
Mask CLN Inspection

All Lots (MOS)
Once/Shift
All Masks After 10 TImes Use

Etch

Critical Dimension
Visual

All Lots (MOS)
All Lots

Thin Aim

C·V Test on Tubes
on Lots
Reflectivity

Once/10 Days and After CLN.
Once/Shift
Once/Shift

Low Temp.
Oxide

Refractive Index,
Wt% of Phosphorus
Visual

1 Test Wafer/Lot
1 Test Wafer/Lot
1 Test Wafer/Lot

E·Test

Measuring Data

All Lota

Calibration

Instrument for Thickness'
and C.D Measu~ing

Once/week

c8SAMSUNG SEMICONDUCTOR

31

QUALITY and RELIABILITY
3. Photo/Etch process quality control
Process Flow

Process Step
Prebake

MFG. Control Item
Oven PM, Temperature
.
.,'/
Time

QC. MonltorlGate
Oven·particle Temp
N, Flow Rate

Photo Resist (PR)
-spin

Thickness Machine PM

Soft Bake

Oven PM, Temperature
Time

Temp. N, Flow Rate

Align/Expose

light Uniformity
Alignment, Focus Test
Mask Clean Inspection
Mask Clean Exposure
Light Intensity

light Intensity
Mask Clean Insp.

Develop

Equipment PM
Solution Control

Vacuum

Develop

PRC.D.'S Alignment
Particles
Mask and Resist Defects

Chec~

·;.10';··'

QC Inspection

Critical Dimension

Hard Bake

Oven PM, Temperature
Time

Temp.
N, flow Rate

Etch

Etch rate, Equipment
PM & Settings, Etch
Time to Clear

Etchant Temp.
Etch Rate

Inspection

Over/Under

PR Strip

Machine-PM

Final Check

C.D.'S Over and unde~
Etch, Particles,
PR Residue; Defects,
Scratches

ac InspectIOn
,

Same as Final Check,
However, More Intense
on limited Sample
BaSis. (AQL 6.5%)

4. Reliability-related Intertayer Dielectric, Metallization, and Passivation Process Quality Control Monitor
Item

Frequency

Wt% Phosphorus Content of the Dielectric Glass

1/Shift

Metallization Interconnect

1/Month

AI Step Coverage

1/Month

Metallization Reflectivity

c8

1/Shlft

Passivation Thickl)ess and Composition

1/Shift

Thin Film Defect Density

1/Shift

SAMSUNG SEMICONDUCTOR·

QUALITY and RELIABILITY
Figure 10: General Wafer Fabrication Flow
Process Flow

Process Step

Major Control Item

Wafer and Mask
Input

Starting Material
Incoming Inspection

Mask: (See mask Inspection)
Wafer: (See wafer Inspection)

Wafer Sorting and
Labelling

Resistivity

Initial Oxidation

o.xide Thickness

Photo

• (See -manufacturing section)
• (See FAB,
Monitor/gate)

ac

Inspection

• Critical Dimension
• Visual/Mech - Major: AQL 1.0%
- Minor: AQL 6.5%

QC Gate

• Critical Dimension

Etch

• (See manufacturing section)
• (See FAB, QC'Monitor/gate)

Inspection

• Critical Dimension
• Visual/Mech - Major: AQL 1.0%
- Minor: AQL 6.5%

QC Gate

• Critical Dimension
• Visual/Mech

Diffusion
Metalization

• (See in-process Quality Inspection)

E-test

• Electrical Characteristics

Diff'n
Metal

Q

c8SAMSUNG SEMICONDUCTOR

33

QUALITY
and RELIABILITY'
,
FIQURE 10. General Wafer Fabrication Flow (Continued)
Process Fow

Process Step

Major Control Item

QC Gate

• Electrical Characterisitics

Back·Lap

• Thickness

Back Side Evaporation

• Thickness, Time
Evaporation Rate

Final Inspection

~ All Wafers Screened'

;

(V!liyaI/Mech)
'\:t:',

QC Fab. Final Gate

"

'.

,

• Visual/Mech.
- Major: AOL 1.0%
. - Minor: AOL 6.5%

EDS
(Electrical Die Sorting)

OCGate

• Function Monitor

\

Sawing

·Inspectlon

• Chip Screen

QC Final InspectIOn

• AOL 1.0%
• Fab. Defect
• Test Defect
• Sawing Defect

I

Die Attach

c8SAMSUNG SEMICONOUCTOR

34

QUALITY and RELIABILITY
ASSEMBLY
The process control and inspection points of the assembly operation are explained and listed below:
1. Die Inspection
Following 100% inspection by manufacturing, in-process Quality Control samples each lot according to internal or customer
speCifications and standards.
2. Die Attach Inspection:
Visual inspection of samples is done periodically on a machine/.operator basis. Die Attach techniques are monitored and
temperatures are verified.
3. Die Shear Strength:
Following Die Attach, Die Shear Strength testing is performed periodically on a machine/operator basis. Either manual
or automatic die attach is used.
4. Wire Bond Inspection:
Visual inspection of samples is complemented by a wire pull test done periodlcany during each shift. These checks are
also done on a machine/operator basis and XR data is maintained.
5. Pre-SeaIiPre-Encapsulation Inspection:
Following 1 00% inspection of each lot", samples are taken on a lot acceptance basis and are inspected according to
internal or customer criteria.
6. Seal Inspection:
Periodic monitoring of the sealing operation checks the critical tempei1ure profile of the sealing oven for both glass and
metal seals.
7. Post-Seal Inspection:
Subsequent to.a 100% visual inspection, In-ProcesS Quality Control samples each for conformance to visual criteria.
8. General Assembly Flow is shown in Figure 11.

Sampling Plans
1. Sampling plans are based on an AQL (Acceptable Quality Level) concept and are determined by internal or by customer '
specifications.
~.

Raw Material Incoming Inspection.

c8

SAMSUNG SEMICONDUCTOR

35

QUALITY and RELIABILITY
2. Raw Material Incoming Inspection (confinued)
Inspection Item

Meterial

Acceptable Quality Level

1) Visual Inspection

AQlO.65%

1 ) Visual Inspection
2) Bond Pull Strength Test
3) Bondability Test

n:5, C=O
n:13, C=O
Critical Defect: 0.65%
Major Defect: 1.0%
Minor Defect: 1.5%
n:5, C=O

.,

4) Chemical Composition Analysis

1) Visual Inspection
2) Moldability Test

LTPD
lTPD
lTPD
lTPD

C=2
C=O
C=O
C=O

Wafer

Au/AI
Wire

Visual Inspection
Dimension Inspection
Function Test
Work Test

10%,
20%,
20%,
20%,

lead Frame

1)
2)
3)
4)

n:5, C=O
Critical Defect: 0.15%
Major Defect: 1 .0%
Minor Defect: 1.5%
n:5, c=o

Molding Compound
3) Chemical Composition Analysis
Packing Tube
& Pin

1) Visual Inspection
2) Dimension Inspection
3) Electro-Static Inspection
4) Hardness Test

Solder

1) Visual Inspection
2) Weight Inspection
3) Chemical Composition Analysis

lTPD 20% C=O
lTPD 20% C=O
lTPD 20% C=O

Flux

1) Acidity Thst
2) Specific Gravity Test
3) Chemical Composition Analysis

LTPD 20% C=O
lTPD 20% C=O
lTPD 20% C=O

Solder Preform

1') Visual Inspection
2) Work Test
3) Chemic&! Composition Analysis

AQl1.0%
AQl1.0%
- AQl1.0,%

Coating Resin

1) Visual Inspection
2) Work Test
3) Chemical Composition Analysis

AQl.1.0%
AQl1.0%
AQl1.0%

1) Work Test

2) Mark Permanency Test

Critical Defect: 0.15%
Major Defect: 1.0%
Minor Defect: 1.5%
n:5, C=O

Chip Carrier'

1)
2)
3)
4)

Visual Inspection
Dimension Inspection
Electro-Static Inspection
Hardness Test

lTPD 15% C=2
lTPD 15% C=O
n:5, C=O
n:5, C=O

Vinyl Pack

1) Visual Inspection
2) Work Test
3) Electro-StatiC Inspection

lTPD 20% C-O
LTPD 20% Co.O
lTPD 15% C ... O

AgEpoxy

1) Work Test
2) Chemical Composition Analysis

n:8 C=O
n:8 C=O

Marking Ink

Letter Marking

1) Visual Inspection
2) Work Test

Spare Parts
& Others

1) Dimension Inspection
2) VIsual Inspection

c8SAMSUNG SEMICONDUCTOR'

",

lTPD 15%, C=2
lTPD 15% C=2
n:5, C=O
n:5, C=O

n:5, C=O
n:5, C=O

36

QUALITY and RELIABILITY
3. In Process Quality Inspection
A. Assembly Lot Acceptance Inspection
(1) Acceptance quality level for wire bond gate inspection
Defect Class

Inspection Level

AQL 0.65%

Critical Defect

Major Defect

AQL 1.0%

Minor Defect

AQL 1.5%

Type Qf Defect

-

Missing Metal
Chip Crack
No Probe
Epoxy on Die
Mixed Device
Wrong Bond
Missing Bon?

- Diffusion Defect
-Ink Die
- Exposed Contact
- Bond Short
- Die Uft
- Broken Wire

-

Metal Missing
Metal AdheSion
Pad Metal Discolored
Tilted Die
Die Orientation
Partial Bond

-

Oxide Defect
Probe Damage
Metal Corrosion
Incomplete Wetting
Weakened Wire

-

Adjacent Die
Passivation Glass
Die Attach Defect
Wire Loop Height
Extra Wire

-

Contamination
Ball Size
Wire Clearance
Bond· Deformation

(2) Acceptance quality level for Mold/Trim gate inspection
Defect Class

Inspection Level

Kind of Defect

- Deformation
- No Plating
- Broken Lead

Critical Defect

AQL 0.15%

- Incomplete Mold
- Void, Broken Package
- Misalignment

Major Defect

AQL 0.4%

- Ejector Pin Defect
- Package Burr
- Flash on Lead

- Crack, Lead Burr
- Rough Surface
- Squashed Lead

AQL 0.65%·

- Lead Contamination
- Poor Plating
- Package Contamination

- Bent Lead

Minor Defect

8. In-process monitor inspection
Inspection Item

Frequency

Reference

Die Shear Test
Bond Strength Test
Solderability Test
Mark Permanency Test
Lead Integrity Test
In-Process Monitor
Inspection for Product
• X-Ray Monitor
Inspection for Molding
• Monitor Inspection
for Production Equipment

Each Lot
Each Lot
Weekly
Weekly
Weekly
4 Times/Shift/Each Process

MIL-STD-883C, 2019-2
MIL-STD-883C, 2011-4
MIL-STD-883C, 2003-3
MIL-STD-883C, 2015-4
MIL-STD-883C, 2004-4
Identify for Each Control Umit

2 Times/Shift/Mold Press

Identify for Each Control Limit

2 Times/Shift/Each Unit of
Equipment

Identify fOf Each Control Limit

•
•
•
•
•
•

c8

SAMSUNG SEMICONDUCTOR

37

QUALITY and RELIABILITY
4. Outgoing quality inspection plan (LTPD)

Defect- Class

DIscrete

KInd of Defect

LSI

Critical Defect
electrical
visual

1%

2%

Open, short
Wrong configuration, no marking

Major Defect
electrical
visual .

1.5%

3%

Items which affect reliability most strongly

Minor Defect
electrical
visual

2%

5%

Items which minimally or do
not affect reliability at all
(cosmetic, appearance, etc.)

I

.c8SAMSUNG SEMICONDUCTOR

38

QUALITY and RELIABILITY

•

FIGURE 11. General Assembly Flow
Process Flow

Process Step

Major Control Item

Water
Water Incoming
Inspection

Q.C. Water Incoming Inspection AQL 4.0%

Tape Mount
Sawing Q.C. Monitor

Q.C. Monitoring:
- Chip·out
- Crack
- Sawing-speed
- D.I. Purity

-

Visual Inspection

100% Screen:
- FAB Detect
- EDS Test Detect
- Sawing & Scratch Detect

Q.C. Gate

1st AQL 1.0%
Reinspection AQL: 0.65%

Scratch
Sawing Discoloration
Cut Count
CO, Bubble Purity

•

Lead Frame (UF)

Lead Frame Incoming

R>
n
.c8S~MSUNG

*Q.C.UF Incoming Inspection
1. Acceptance Quality Level
- Dimension: LTPD 20%, C=O
- Visual & Mechanical: LTPD 10%, C=2
- Functional Work Test: LTPD 10%, C=2

Die Attach (D/A)
Q.C. Monitor

*Q.C.D/A Monitor Inspection
1. Bond torce
2. Frequency: 4 Times/Station/Shift
3. Sample: 24 ea TIme
4. Acceptance Criteria
Detect

Acceptance

Critical

0

1

Major

1

2

Reject

Cure

SEMICONDUCTOR

39

,

QUALITY and RELIABILITY
FIGUR/11. General Assembly Flow (Continued)
Process Flow

Process Step

<>

Q.C. Monitor

Major Control Item

• Q.C. Cure Monitor Inspection
1. Control Item
,- Temperature
~ In:lout Time
2. Frequency
- 1 Time/Shift

Au Wire
Bonding Wire
Incoming Inspection

• Q.C. Au VYire Incoming Inspection
1. Visual Inspection: N=;5, C=O
2. Bond Pull Test Strength Test: N=13, C=O
3. Bond Ability Test
- Critical Defect: AQL 0.65%
- Major Defect: AQL 1 .0%
- Minor Defect: AQL 1.5%

Wire Bonding (W/B)
)

1 00% Visual .
Inspection

O.C. Monitor

Q.C. Gate
I

• Q.C. W/B Monitor Inspection
1. Frequency: 6 Times/Mach/Shift
1. Q.C. Acceptance Quality Level
- Critical' Defect: AQL 0.65%
- Major Defect: AQL 1.0%
- Minor Defect: AQL 1.5%

Mold Compound

Incoming Inspection
Mold

• Moldability Test
- Critical Defect: AQ!- 0.15%
- Major Defect: AQL 1.0%
- Minor Defect: AQL 1.5%

Mold
Q.C. Monitor

c8 SA~SUNG

SEMICONDUCTOR

• Q.C. Mold Monitor Inspection
1. In-Process Monitor Inspection
- Frequency: 4 Times/Station/Shift
- Sample: 200 UnitslTime
2. Acceptance Quality Level
- Critical Defect: AQL 0.25%
- Major Defect: AQL 0.4%

.

40

. QUALITY and RELIABILITY
FIGURE 11. General Aasembly Flow (Continued)
Process Flow

Process Step

Major Control Item

Cure
O.C. Monitor

~.

~

)-

-<
Yl
c8

• O.C. Cure Monitor Inspection
1. Control Item
- Temperature
- In/out Time
2. Frequency
- 1 Time/shift

Deflash
O.C. Monitor

• O.C. Deflash Monitor Inspection
1. Control Item
- Pressure
- Belt Speed
- VisuallMechanical Inspection
2. Frequency: 4 TImes/Mach/Shift
3. Identify each Defect Control Umit

TRIM/BEND

O.C. Monitor

• O.C. Trim/Bend Monitor Inspection
1 .Visual Inspection
2. Frequency: 4 times/Station/Shift

Solder

100% Visual Inspection

O.C. Monitor

• O.C. Solder Monitor Inspection
1.Frequency: 4 Times/Mach/Shift
2. Criteria
- Critical Defect: AOL 0.65%
- Major Defect: AOL 1.0%

O.C. Gate

• O.C, Mold Gate
- Acceptance Criteria
Critical Defect: AOL 0.1 5%
Major Defect: AOL 0.4%
Minor Defect: AOL 0.65%

Test

100% Electrical Test

O.C. Monitor

Correlation Sample Reading for Initial I
Device Test

Mark

100% Visual Inspection

SAMSUNG SEMICONDUCTOR

41

QUALITY and RELIABILITY
FIGURE 11. General
Process Flow

'<>

Assem~ly ~Iow (Continued)
Process Step

PRT Monitoring
(Process Reliability
Testing)

Q.C. Monitor

I

I

<>

Major Control Item

1. PRT for SFET
- HTRB (48 Hrs) HTGB (48 Hrs)
- other (when applicable)
2. Acceptance Criteria: LTPD 10%

·

Q.C. Gate

·

Q.A. Gate

·

Stock

QA Gate

·

Q.C. Marking Monitor Inspection
- Frequency: 4 Times/Station/Shift
- Sample: 24 UnitslTime
..:... Identify for Each C.L.
- Acceptance Criteria
'Reject

Defect

Acceptance

Critical

0

1

Major

1

2

Q.C. Final Acceptance Level
- Critical Defect: AQL 0.15%
- Major Defect: AQL 0.4%'
- Minor Defect: AQL 0.65%
Q.A. Incoming inspection for ,SFET
1. Critical Defect:
- Electrical Test; LTPD 2% (N=116.
LTPD 2% (N=116.
- Visual Test:
2. Major Defect:
- Electrical Test: LTPD 3% (N=116.
LTPD 3% (N=116.
- Visual Test:
3: Minor Defect: '
-Electrical Test: LTPD 5% (N=116.
LTPD 5% (N=116.
- Visual Test:

C=o)
C=O)
C=1)
C=1)

)

C=2)
C=2)

Age Control

• Q.A. Outgoing Inspection
1. Quantity
2. Customer
3. Packing
4. Sampling Inspection (when applicable)
- SlII1lpling plan is same as incoming
Inspection

Shipment
,

c8

SAMSUNG SEMICONDUCTOR

42

PRODUCT GUIDE
1. SELECTION GUIDE
N-CHANNEL'
BVDss(V)

50.00

60.00

ciS

IotA)
10.00
10.00
10.00
12.00
12.00 .
12.00
0.40
3.50
4.00
7.00
7.00
8.00
8.00
10.00
10.00
10.00
12.00
12.00
t2.00
12.00
12.00
12.00
14.00
14.00
14.00
. 24.00
24.00
24.00
27.00
27.00
27.00
33.00
33.00
40.00
40.00

Package

Part Number

0.28
0.28
0.28
0.20
0.20
0.20

TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220

SSM10N05
SSH10N05
SSP10N05
SSM12N05
SSH12N05
SSP12N05

-

3.20
0.80
0.60
'0.40
0.40
0.30
0.30
0.28
0.28
0.28
0.25
0.25
0.25
0.20
0.20
0.20
0.18
0.18
0.18
0.11
0.11
0.11
0.085 '.
0.085
0.085
0.08
0.08
0.055
0.055

TO-126
TO-220
TO-220
TO-3
TO-220
TO-3
TO-220
TO-3
TO-3P
TQ-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-3
TQ-3P

IRFA1Z3
IRF513
IRF511
IRF123
IRF523
IRF121
IRF521
SSM10N06
SSH10N06
SSP10N06
IRF133
IRFP133
IRF533
SSM12N06
SSH12N06
SSP12N06
IRF131
IRFP131
IRF531
IRF143
IRFP143
IRF543
IRF141
IRFP141
IRF541
IRF153
IRFP153
IRF151
IRFP151

63
228
228
68
233
68
233

73
153
238
78
158
243
78
158
243
83
163
83
163

RDS(on~ll)

Page

73
153
238

-

80.00

10.00
10.00
10.00
12.00
·12.00
12.00

0.33
0.33
0.33
0.18
0.18
0.18

TQ-3
TO-3P
TO-220
TO-3
TQ-3P
TO-220

SSM10N08
SSH10N08
SSP10N08
SSM12N08
SSH12N08
SSP12N08

-

100.00

0.50
3.50
4.00
7.00
7.00
8.00
8.00
10.00
10.00
10.00

2.40
0.80
0.60
0.40
0.40
0.30
0.30
0.33
0.33
0.33

TO-126
TO-220
TO-220
TO-3
TO-220
TO-3
TO-220
TO-3
TO-3P
TO-220

IRFA1Z0
IRF512
IRF51 0
IRF122
IRF522
IRF120
IRF520
SSM10Nl0
SSH10Nl0
SSP10Nl0

63
228
228
68
233
68
233

SAMSUNG SEMICONDUCTOR

II

-

-

45

(.

PRODUCT GUtDE .
SELECTION GUIDE
BVDss(V)

I

100.00

120.00 .

150.00

..

'. c8

SAMSUNG

(continued)

. ~DS(~n)(Ol

lo(A)
12.00
12.00
'12.00
12.00
12.00
12.00
14.00
14.00
14.00
24.00
24.00
24.00
27.00
27.00
27.00
33.00
33.00
40.00
40.00

0.18
0.18
0.18
0.25
0.25
0.25
0.18
0.18
0.18
0.11
0.11
0.11
0.085
0.085
0.085
0.08
0.08

0:055
. 0.055

7.00
7.00
7.00
8.00
8.00
8.00

0.70
0.70
0.70
0.50
0.50
0.50

2.00
'2.50
4.00
4.00
5.00
5.00
7.00
7.00
7i OO
8.00
8.00
8.00
8.00
8.00
8.00
9.00
9.00
9.00
16.00
'16,00
16.00
18.00
18.00
18.00
25.00
25.00

2.40
1.50
1.20 .
1.20
0.80
0.80
0.70
0.70
0.70
0.60
0.60
0.60
0.50
0.50
0.50
0.40
0.40
0.40
0.22
0:22
0.22
0.18
. 0.18
0.18
0.12
0.12

/

SEMIC~NDUCTOR

Package

TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TQ-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
. TO-3
TO-3P

Part Number

Page

-

SSM12N10
SSH12N10
SSP12N10
IRF132
IRFP132
IRF532·
IRF130
IRFP130
IRF530
IRF142
IRFP142
IRF542
IRF140
IRFP140'
IRF540
IRF152
IRFP152
IRF150
IRFP150

TO'3
TO-3P
TO-220
TO-3
TO-3P
TO-220

SSM7N12
SSH7N12
SSP7N12
SSM8N12
SSH8N12
SSP8N1'2

TO-220
TO-220
. TO-3
TO-220
TO-3
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
Toc3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P

IRF613
IRF611IRF223
IRF623
IRF221
IRF621
SSM7N15
SSH7N15
SSP7N15
IRF233
IRFP233
IRF633
SSM8N15
SSH8N15
SSP8N15
IRF231
IRFP231
IRF631
IRF243
IRFP243
IRF643
IRF241
IRFP241
IRF641
IRF253
IRFP253

-

73
153
238
73
153
238
78
158
243
78
158
243
83
163
83
163

-

248
248
88
253
88
253

-.

-

93
173
258

-

.

93
173
258
98
178
263
98·
178
263
103
183·

46

PRODUCT GUIDE
SELECTION GUIDE

(continued)

BVoss(V)

lo(A)

IIotIon)(O)

150.00

30.00
30.00
40.00
40.00

0.085
0.085

Peckege

0.05

TO-3
TO-3P
TO-3
TO-3P

0.05

Pert Number

Pege

IRF251
IRFP251
SSM40N15
·SSH40N15

103
183
383
383

180.00

7.00
7.00
7.00
8.00
8.00
8.00

0.70
0.70
0.70
0.50
0.50
0.50

TO-3'
TO-3P
TO-220
TO-3
TO-3P
TO-220

SSM7N18
SSH7N18
SSP7N18
SSM8N18
SSH8N18
SSP8N18

-

200.00

2.00
2.50
4.00
4.00
5.00
·5.00
7.00
7.00 .
7.00
8.00
8.00
8.00
8.00
8.00
8.00
9.00
9.00
9.00
16.00
16.00
16.00
18.00
18.00
18.00
25.00
25.00
30.00
30.00
40.00
40.00

2.40
1.50
1.20
1.20
0.80
0.80
C).70
0.70
0.713
0.60
0.60
0.60
0.50
0.50
0.50
0.40
0.40
0.40
0.22
0.22
0.22
0.18
0.18
0.18
0.12
0.12
0.085
0.085
0.05
0.05

TO-220.
TO-220
TO-3
TO-220
ro-3
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-3
TO-3P
TO-3P
TO-3

IRF612
IRF61 0
IRF222
IRF622
IRFZ20
IRF620
SSM7N20
SSH7N20
SSP7N20
IRF232
IRFP232
IRF632
SSM8N20
SSH8N20
SSP8N20
IRF230
IRFP230
IRF630
IRF242
IRFP242
IRF642
IRF240
IRFP240
IRF640
IRF252
IRFP252
IRF250
IRFP250
SSM40N20
SSH40N20

248
248
88
253
88
253

1.30
1.50
2.50
2.50
3.00

5.00
3.60
2.50
2.50
1.80
1.80
1.50
1.50
1.50
1.00.

TO-220
TO-220
TO-3
TO-220
TO-3
TO-220
TO-3
TO-3P
TO-220
TO-3

IRF713
IRF711
IRF323
IRF723
IRF321
IRF721
IRF333
IRFP333
IRF733
SSM5N35

350.00

~.OO

5.00
5.00
5.00
5.00

=8

SAMSUNG SEMICONDUCTOR

-

93
173
258

-

93
173
258
98
178
263
98
178
263
103
183
103
183
383
383
268
268
108
273
108
273
113
193
278

-

47

PRODUCT GUIDE
SELECTION· GUIDE

(cOntinued)

BVDi:oo

1o(A)

.350.00

5.00
·5.00
5.pO
5.50
5.50
8.00
8.00
8.00
10.00
10.00
10.eO
13.00
13.00
15.00
15.00
25.00
25.00

400.00

,

450.00

RD8(onJCIot
1.00
1.00
1.00
1.00
1.00
.0.80
0.80
0.80
0.55
0.55
0.55
0.40
0.40
0.30
0.30
0.20 .
, 0.20

Pac~g.

;

TO-3P'
TO·220
TO-3
TO,3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
··TO-3
TO-3P
TO-3
TO-3P
TO-3
TO-3P

SSH5N35
SSP5N35
IRF331
IRFP331
IRF731
IRF343
IRFP343
IRF743
IRF341
IRFP341
IRF741
IRF353
.IRFP353
IRF351
IRFP351
SSM25N35
SSH25N35
IRF712
IRF71 0
IRF322
IRF722
·IRF320
IRF720
IRF332
IRFP332
IRF732
SSM5N40
SSH5N40
. SSP5N40
IRF330
IRFP330
IRF730
IRF342
IRFP3:42
IRF742
IRF340
IRFP340
IRF740
IRF352·
IRFP352
IRF350
IRFP350
SSM25N40
SSH25N40

1.30
1.50
2.50
2.50
3.00
3.00
5.. 00
6.00
5.00
5.00
5.00
5.00.
5.50
5.50
5.50
8.00
8.00
8.00
10.00
10.00
10.00
13.00
13.00 .
15.00
.15.00
25.00
25.00

5.00
3.60
2.50
2.50
1.80
1.80
1.50
1.50
1.50
1.00
1.00
1.00
1.00
1.00
1.00
0.80
0.80
0.80
0.55
0.55
0.55
0.40
0.40
0.30
0.30
0.20
0.20.

TO-220
TO-22.Q
TO-3···
TO-220
TO-3
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
·iO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3·
TO-3P
TO-220
TO-3
TO-3P
TO-3
TO-3P
TO-3
TO-3P

2.00
2.00
2.50
2.50
4.00
4.00
4.00

4:00
4.00
3.00
3.00
2.00
2.00
2.00

TO,3
T()'220
TO-3
TO-220
TO-3
TO-3P
TO-220

. c8sAMSUNG SEMICONDUCTOR

Part Number

IRF423
IRF823
IRF421
IRF821
IRF433
IRFP433
IRF833

Page

113
193
278
118
198
283
118
19~

283
123
203
123
203
.a92
'392
268
268
106
273
108
273
113
193
278

-

!

,

113
193
278
118
198
283
'118
198
283
123
203
123
203
392
392·

/

128
288
128
288
133
213
293

48

PRODUCT GUIDE
SELECTION GUIDE

(continued)

BVDSS(V)

lo(A)

450.00

4.00
4.00
4.00
4.50
4.50
4.50
7.00
7.00
7.00
8.00
8.00
8.00
12.00
12.00
13.00
13.00
20.00
20.00

500.00

.

550.00

Package

Part Number

1.50
1.50
1.50
1.50
1.50
1.50
1.10
1.10
1.10
0.85
0.85
0.85
0.50
0.50
0.40
0.40
0.30
0.30

TO-3
TO-3P'
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220,
TO-3
TO-3P
TO-3
TO-3P
TO-3
TO-3P

SSM4N45
SSH4N45
SSP4N45
IRF431
IRFP431
IRF831
IRF443
IRFP443
IRF843
IRF441
IRFP441
IRF841
IRF453
IRFP453
IRF451
IRFP451
SSM20N45
SSH20N45

2.00
2.00
2.50
2.50
4.00
4.00
4.00
4.00
4.00
4.00
4.50'
4.50
4.50
7.00
7.00
7.00
8.00
8.00
8.00
12.00
12.00
13.00
13.00
20.00
20.00

4.00
4.00
3.00
3.00
2.00
2.00
2.00
1.50
1.50
1.50
1.50
1.50
1.50
1.10
1.10
1.10
0.85·
0.85
0.85
0.50
0.50
0.40
0.40
0.30
0.30

TO-3
TO-220
TO-3
TO-220
TO-3
TO-3P'
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3 !
TO-3P
TO-220
TO-3
TO-3P
TO-3
TO-3P
TO-3
TO-3P

IRF422
IRF822
IRF420
IRF820
IRF432
IRFP432
IRF832
SSM4N50
SSH4N50
SSP4N50
IRF430
IRFP430
IRF830
IRF442
IRFP442
IRF842
IRF440
IRFP440
IRF840
IRF452
IRFP452
IRF450
IRFP450
SSM20N50
SSH20N50

133
213
293
138
218
298
138
218
298
143
223
143
223
386
386

4.00
4.00
4.00
6.00
6.00
6.00
8.00
8.00

3.00
3.00
3;00
1.80
1.80
1.80
1.00
1.00

TO~3

TO-3P
TO-220
To-3
TO-3P
TO-220
TO-3
TO-3P

SSM4N55
SSH4N55
SSP4N55
SSM6N55
SSH6N55
SSP6N55
SSM8N55
SSH8N55

308
338
368
318
348
378
328
358

RDS(on!Clll

.-

c8SAMSUNG SEMICONDUCTOR

Page

133
~13

293
138
218
298
138
218
298
143
223
143
223
386
386
128
288
128
288
133
213
293

-

49

'PRODUCT GUIDE
SELECTION GU~DE

(continued)

Par:t Number .

Page

SSM15N55
SSH15N55

389
389

TQ-3"
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-3
TO-3P

SSM4N60
SSH4N60
SSP4N60
SSM6N60
SSH6N60
SSP6N60
SSM8N60
SSH8N60
SSM15N60
SSH15N60

308
338
368
318
348
378
328
358
389
389

6.00
6.00
6.00
3.30
3.30
3.30
1.90
1.90
0.80
0.80

TO-3
TO-3P
TQ-220
TO-3
TO-3P
TO-220
TQ-3 .
TO-3P
TO-3
TO-ne

SSM3N70
, SSH3N70
SSP3N70
SSM4N70
SSH4N70
SSP4N70
SSM6N70
SSH6N70
SSM10N70
SSH10N70

303
333
363
313
343
373
323
353
395
395

RD8(on,cO)

Package

BV_V)

lolA)

RD8(on,cot

550.00

15.00
15.00

0.50
0.50

TO-3
TO-3fl

600.00

4.00
'4.00
4.00
6.00' ,
6_00
6.00
8.00
8.00
15.00
15.00

3.00
3.00
3.00
1.80
1.80
1.80
1.00
·1.00
0.50
0.50

3.00
3.00
3.00
4.00
4.00
4.00
6.00
6.00
10.pO
10.00

,
700.00

'"

Packllg~,
'

.-~

P-CHANNEL
BV_V)

lolA)

-60.00

-2.50
-3.00
-5.00
-6.00
-10.00
-10.00
-10.00
-12.00
-12.00
-12.00
-15.00
-15.00
-15.00
-19.00
-19.00
-19.00

.,..100.00

-2.60
-3.00
-5.00
-6.00

1.60
1.20
0.80
0.60
0.40
0.40
0.40
0.30
0.30
0.30
0.30
0.30
0.30
0.20
0.2Q
0:20' .-

TO-220
TO-220
TO-220
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220 ...

1.60
1.20
0.80
0.60

TO-220
TO-220
TQ-220
TO-220

,

.--~

c8,SAMSUNG SEMICONDUCTOR'

..

Part Number

Page

IRF9513
IRF9511
IRF9523
IRF9521
IRF9133
IRFP9133
IRF9533
IRF9131
IRFP9131
IRF9531
IRF9143
IRFP9143
IRF9543
IRF9141
IRFP9141
IRF9541

398
398
401
401
404
404
404
404
404
404
407
407
407
407
407
407

IRF9512
IRF9510
IRF9522
IRF9520

398
398
401
401

- _._-

._-

50

PRODUCT GUIDE'
. P-CHANNEL

(continued)

BVDSS(V)

Iu(A)

RDS(onllO)

Package

Part Number

Page

-100.00

-10.00
-10.00
-10.00
-12.00
-12.00
-12.00
-15.00
-15.00
-15.00
-19.00
-19.00
-19.00

OAO

TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220

IRF9132
IRFP9132
IRF9632
IRF9130
IRFP9130
IRF9630
IRF9142
IRFP9142
IRF9542
IRF9140
IRFP9140
IRF9540

404
404
416
404
404
416
407
407
407
407
407
407

-1.50
-1.75
-3.00
-3.50
-5.50
-5.50
-5.50
-6.50
-6.50
-6.50
-9.00
-9.00
-9:00
-11.00
-11.00

4.50
3.00
2.40
1.50
1.20
1.20
l' .20
0.80
0.80
0.80
0.70
0.70
0.70
0.50
0.50
0.50

TO-220
TO-220
TO-220
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220

IRF9613
IRF9611
IRF9tl23
IRF9621
IRF9233
IRFP9233
IRF9633
IRF9231
IRFP9231
IRF9631
IRF9243
IRFP9243
IRF9643
IRF9241
IRFP9241
'IRF9641

410
410
413
413
416
416
.416
416
416
416
419
419
419
419
419
419

-1.50
-1.75
-3.00
-3.50
-5.50
-5.50
-5.50
-6.50
-6.50
-6.50
-9.00
-9.00
-9.00
-11.00
-11.00
-11.00

4.50
3.00
2.40
1.50
1.20
1.20
1.20
0.80
0.80
0.80
0.70
0.70
0.70
0.50
0.50
0.50

TO-220
TO-220
TO-220
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220
TO-3
TO-3P
TO-220

IRF9612
IRF9610
IRF9622
IRF9620
IRF9232
IRFP9232
IRF9632
IRF9230
IRFP9230
IRF9630
IRF9'242
IRFP9242
IRF9642
IRF9240
IRFP9240
IRF964Q

410
410
413
413
416
416
416
416
416
416
419
419
419
419
419
4'19

-150.00

0.40

OAO
0.30
0.30
0.30
0.30
0.30
0.30
0.20
0.20
0.20

-~1.00

-250.00

c8

I

SAMSUNG SEMICONDUCTOR

..

1

PRODUCT GUIDE
2. ALPHA NUMERIC INDEX
Part Number

IRF120
IRF121
IRF122
IRF123
IRF130
IRF131
I~F132

IRF133
IRF140
IRF141
IRF142
IRF143
IRF150
IRF151
IRF152
IRF153
IRF220
IRF221
IRF222
IRF223
'IRF230
IRF231
IRF232
IRF233
IRF240
IRF241
IRF242
IRF243
IRF250
IRF251
IRF252
IRF253
IRF320
IRF321
IRF322
IRF323
IRF330
IRF331
IRF332
IRF333
IRF340
IRF341
IRF342
IRF343
IRF350
IRF351
IRF352
IRF353
IRf420
IRF421

Page Number

Part Number

68
68
68
68
73,
73
73
7378
78
78
78
83
83
83
83
88
88
88
88
93
93
93

IRF422
IRF423
IRF430
IRF431
IRF432
IRF433
IRF440
IRF441
IRF442
IRF443
IRF450
IRF451
IRF452
IRF453
IRFA1Z0
IRFA1Z3
IRFP120
IRFP121
IRFP122
IRFP123
IRFP130
IRFP1 3 1
IRFP132
IRFP133
IRFP140
IRFP141
IRFP142
IRFP143
IRFP150
,IRFP151
IRFP152
IRFP153
IRFP220
IRFP221
IRFP222
IRFP223
IRFP230
IRFP231
IRFP232
IRFP233
IRFP240.
IRFP241
IRFP242
IRFP243
IRFP250
IRFP251
IRFP252
IRFP253
IRFP320 i
IRFP321

9~

98
98
98
98
103
103
103
103
108
108
108
108
113
113
113
113
118
118
11.8
118
123
123
123
123
128
128

. c8SAMSUNG SEMICONDUCTOR

I

' Page Number

128,

. 121t"
133,'
133
133
133
13B
138
138
138
143
143
143
143
63
63
148
148ft.
148,,:
148
153
153
153
153
158
158
158
158
163
163
163
163
168
168
168
168
173
173
173
1"73
178
178
178
178
183
183
183
183
188
,188

Part Number

IRFP322
IRFP323'
IRFP330
IRFP331
IRFP332
IRFP333
IRF:P340
IRFP341
IRFP342
IRFP343
IRFP350
IRFP351
IRFP352
IRFP353
IRF420
IRF421
IRF422
IRF423
IRFP430
IRFP431
IRFP432
IRFP433
IRFP440
IRFP441
IRFP442
IRFP443
IRFP450
IRFP451
IRFP452.
IRFP453
IRF51 0
IRF511
IRF512
IRF513
IRF520
IRF521
IRF522
IRF523
IRF530
IRF531
IRF532
IRF533
IRF540
IRF541
IRF542
IRF543
IRF61 0
IRF611
IRF612
IRF613

Page Number

I.
I

188
le8
193
193
193
193
198
198
198
198
203 .
203
203
203
208
208
208
208
213
213
213
213
218
218'
218
218
223
223
223
223
228
228
228
228
233
233
233
233
238
238·
238
238
243
243
243
243
248
248
248
248

52

PRODUCT GUIDE
ALPHA NUMERIC INDEX
Part Number

IRF620
IRF621
IRF622
IRF623
IRF630
IRF63t
IRF632
IRF633
IRF640
IRF641
IRF642
IRF643
IRF710
IRF711
IRF712
IRF713
IRF720
IRF721
IRF722
IRF723
IRF730
IRF731
IRF732
,'"
IRF733
IRF740
IRF741
IRF742
IRF743
IRF820
IRF821
IRF822
IRF823
IRF830
IRF831
IRF832
IRF833
IRF840
IRF841
IRF842
IRF843
SSM3N70
SSM4N45
SSM4N50
SSM4N55
SSM4N60
SSM4N70
SSM40N15
SSM40N20
SSM5N35
SSM5N40

c8

Page Number

253
253
253
253
258
258
258
258
263
263
263
263
268
268
268
268
273
27i
2h
,;'273
278
278
278
2'78
283
283
283
283
288
288
288
288
293
293
293
293
298
298
298
298
303

-

308
308
313
383
383

-

(continued)

Pllrt Number

Page Number

SSM6N55
SSM6N60
SSM6N70
SSM7N12
SSM7N15
SSM7N18
SSM7N20
SSM8N12
SSM8N15
SSM8N18
SSM8N20
SSM8N55
SSM8N60
SSM10N05
SSM10N06
SSM10N08
SSM10N10
SSM1QN70
SSM12N05
SSM12N06
SSM1-2N08
SSM12N10
SSM15N55
SSM15N60
SSM20N45
SSM20N50
SSM25N35
SSM25N40
SSH3N70
SSH4N45
SSH4N50
SSH4N55
SSH4N60
SSH4N70
SSH40N15
SSH40N20
SSH5N35
SSH5N40
SSH6N55
SSH6N60
SSH6N70
SSH7N12
SSH7N15
SSH7N18
SSH7N20
SSH8N12
SSH8N15
SSH8N18
SSH8N20
SSH8N55

318
318
323

SAMSUNG SEMICONDUCTOR

-

328
328

()

395
l' 389
389
386
386
392
392
333

-

338
338
343
283
283

-

348
348
353

-

358

Pert Number

SSH8N60
SSH10N05
SSH10N06
SSH10N08
SSH10N10
SSH10N70
SSH12N05
SSH12N06
SSH12N08
SSH12N10.
SSH15N55
SSH15N60
SSH20N45
. SSH20N50
SSH25N35
SSH25N40
SSP3N70
SSP4N45
SSP4N50
SSP4N55
SSP4N60
SSP4N70
SSP5N35
SSP5N40
SSP6N55
SSP6N60
SSP7N12
SSP7N15
SSP7N18
SSP7N20
SSP8N12
SSP8N15
SSP8N18
SSP8N20
SSP10N05
SSP10N06
SSP10N08
SSP10N10
SSP12N05
'SSP12N06
'SSP12N08
SSP12N10
IRF9120
IRF9121
IRF9122
IRF9123
IRF9130
IRF9131
IRF9132
IRF9133

Page Number

358

395
389
389
386
386
392
392
363

-

368
368
373

-

378
378

-

401
401
401
401
404
404
404
404

r

.

I

PRODUCT GUIDE
: ALPHA NUMERIC INDEX
Part Number
IRF9140
IRF9.141
IRF9142
IRF9143
IRF9220
IRF9221
IRF9222
IRF9223
IRF9230
IRF9231
IRF9232
IRF9233
IRF9240
IRF9241
IRF9242
IRF9243
IRFP9120
IRFP9121
IRFP9122
IRFP9123
IRFP9130
IRFP9131
IRFP9132
lRFP9133

c8SAMSUNG

Page Number
407
407
.407
407
413
413
413
413
416
416
416
416
419
419
419
419
401
401
401
401
404
404
404
404

(cootinued)

Part Number
IRFP9140
IRFP9141
IRFP9142
IRFP9143
IRFP9220
IRFP9221
IRFP9222
IRFI"9223
IRFP9230
IRFP9231
IRFP9232
IRFP9233
IRFP9240
IRFP9241
IRFP9242
IRFP9243
IRF9510
IRF9511
IRF9512
IRF951l
IRF9520
IRF9521
IRF9522
'IR1=952'3

SEMICONDU~OR

Page Number

Part Number

Page Number

407

IRF9530
IRF9531
IRF9532
IRF9533
IRF9540
IRF9541
IRF9542
IRF9543
IRF9610
IRF9611
IRF9612
IRF9613
IRF9620
IRF9621
IRF9622
IRF9623
IRF9630
IRF963'1
IRF9632
IRF9633
IRF9640
IRF9641
IRF9642
IRF9643

404
404
404
404
407
407
407
407
410
410
410
410
413
413
413
.413
416
416
416
416
416
416
416
416

407
407
407
413
413
413
413
416
416
416
416
419
419'
419
41.9
398
398
398
398
401
401
401
410

i

54

·PRODUCT GUIDE
3. CROSS REFERENCE GUIDE
The following table represents a cross reference for POWER MOSFETS.
The Samsung devices are a replacement for the indicated industry part numbers.
International
Rectifier

SAMSUNG
Direct
Replacement

International
Rectifier

SAMSUNG
Direct
Replacement

International
Rectifier

SAMSUNG
Direct
Replacement

International
Rectifier

SAMSUNG
blrect
Replacement

IRF120
IRF121
IRF122
IRF123
IRF130

IRF120
IRF121
IRF122
IRF123
IRF130

IRF352
IRF353
IRF420
IRF42t
IRF422

IRF352
IRF353
IRF420
IRF421
IRF422

IRF713
IRF720
IRF721
IRF722
IRF723

IRF713
IRF720
IRF721
IRF722
IRF723

IRF9620
IRF9621
IRF9622
IRF9623
IRF9630

IRF9620
IRF9621
IRF9622
IRF9623
IRF9630

IRF131
IRF132
IRF133
IRF140
IRF141

IRF131
IRF132
IRF133
IRF140
IRF141

IRF423
IRF430
IRF431
IRF432
IRF433

IRF423
IRF430
IRF431
IRF432
IRF433

IRF730
IRF731
IRF732
IRF733
IRF740

IRF730
IRF731
IRF732
IRF733
IRF740

IRF9631
IRF9632
IRF9633
I.RF9640
IRF9641

IRF963.1
IRF9632
IRF963"3
IRF9640
IRF9641

IRF142
IRF143
IRF150
IRF151
IRF152

IRF142
IRF143
IRF150
IRF151
IRF152

IRF440
IRF441
IRF442
IRF443
IRF450

IRF440
IRF441
IRF442
IRF443
IRF450

IRF741
IRF742
IRF743
IRF820
IRF821

IRF741
IRF742
IRF743
IRF820
IRF821

IRF9642
IRF9643
IRFD1Z0
IRFD1Z3

IRF9642
IRF9643
(IRFA1Z0)
(IRFA1Z3)

IRF153
IRF220
IRF221
IRF222
IRF223

IRF153
IRF220
IRF221
IRF222
IRF223

IRF451
IRF452
IRF453
IRF51 0
IRF511

IRF451
IRF452
IRF453
IRF51 0
IRF511

IRF822
IRF823
IRF830
IRF831
IRF832

IRF822
IRF823
IRF830
IRF831
IRF832

IRFP131
IRFP132
IRFP133
IRFP140
IRFP141

IRFP131
IRFP132
IRFP133
IRFP140
IRFP141

IRF231
IRF232
IRF233
.IRF240
IRF241

IRF231
IRF232
IRF233
IRF240
IRF241

IRF512
IRF513
IRF520
IRF521
IRF522

IRF512
IRF513
IRF520
IRF521
IRF522

IRF833
IRF840
IRF841
IRF842·
IRF843

IRF833
IRF840
IRF841
IRF842
IRF843

IRFP142
IRFP143
IRFP150
IRFP151
IRFP152

IRFP142
IRFP143
.IRFP150
IRFP151
IRFP152

IRF242
IRF243
IRF250
IRF251
IRF252

IRF242
IRF243
IRF250
IRF251
IRF252

IRF523
IRF610
IRF611
IRF612
IRF613

IRF523
IRF610
IRF611
IRF612
IRF613

IRF9510
IRF9511
IRF9512
IRF9513
IRF9520

IRF9510
IRF9511
IRF9512
IRF9513
IRF9520

IRFP153
IRFP230
IRFP23.1
IRFP232
IRFP233

IRFP153
IRFP230
IRFP231
IRFP232
IRFP233

IRF253
IRF320
IRF321
IRF322
IRF323

IRF253
IRF320
IRF321
IRF322
IRF323

IRF620
IRF621
IRF622
IRF623
IRF630

IRF620
IRF621
IRF622
IRF623
IRF630

IRF9521
IRF9522
IRF9523
IRF9530
IRF9531

IRF9521
IRF9522
IRF9523
IRF9530
IRF9531

IRFP240
IRFP241
IRFP242
IRFP243
IRFP250

IRFP240
IRFP241
IRFP242
IRFP243
IRFP250

IRF330
IRF331
IRF332
IRF333
IRF340

IRF330
IRF331
IRF332
IRF333
IRF340

IRF631
IRF632
IRF633
IRF640
IRF641

IRF631
IRF632
IRF633
IRF640
IRF641

IRF9532
IRF9533
IRF.9540
IRF9541
IRF9542

IRF9532
IRF9533
IRF9540
IRF9541
IRF9542

IRFP251
IRFP252
IRFP253
IRFP330
IRFP331

IRFP251
IRFP252
IRFP253
IRFP330
IRFP331

IRF341
IRF342
IRF343
IRF350
IRF351

IRF341.
IRF342
IRF343
IRF350
IRF351

IRF642
IRF643
IRF710
IRF711
IRF712

IRF642
IRF643
IRF710
IRF711
IRF712

IRF9543
IRF9610
IRF9611
IRF9612
IRF9613

IRF9543·
IRF9610
IRF9611
IRF9612
IRF9613

IRFP332
IRFP333
IRFP340
IRFP341
IRFP342

IRFP332
IRFP333
IRFP340
IRFP341
IRFP342

) Samsung number in Parentheses : Package alter native on possible substitution

c8

SAMSUNG SEMICONDUCTOR

55

PRODUCT GUIDE
CROSS REFERENCES GUIDE

(continued)

SAM SUNG

SAMSUNG
Direct
Replacement

International
Rectifier

SAMSUNG
Direct.
Replacement

International
Rectifier

Direct
Replacement

International
Rectifier

SAMSUNG
Direct
Replacement

IRFP441
IRFP442
IRFP443 .
IRFP450
IRi=P451

IRFP441
IRFP442
IRFP443
IRFP450
IRFP451

IRFP9133
IRFP9140'
IRFP9141
IRFP9142
IRFP9143

IRFP9133
IRFP9140
IRFP9141
IRFP9142
IRFP9143

IRFP9241
IRFP9242
IRFP9243

IRFP9241.
IRFP9242
IRFP9243.

IRFP353

IRFP343
IRFP350
IRFP351
IRFP352
IRFP353

IRFP430
IRFP431
IRFP432
IRFP433
IRFP440 .

IRFP430
IRFP431
IRFP432
IRFP433
IRFP440

IRFP452
IRFP453
IRFP9130
IRFP9131
IRFP9132

'IRFP452
IRFP453
IRFP9130
IRFP9131
IRFP9132

IRFP9230
IRFP9231
IRFP9232
IRFP9233
IRFP9240

IRFP9230
IRFP9231
IRFP9232
IRFP9233
IRFP9240

MOTOROLA

SAMSUNG
Direct
Replacement

.MOTOROLA

SAMSUNG
Direct
Replacement

MOTOROLA

SAMSUNG
Direct
Replacement

MOTOROLA

MTH6N55
MTH6N60
MTH8N55
MTH8N60'
MTH7N35

SSH6N55
SSH6N60
SSH8N55
SSH8N60
.IRFP343

MTM7N12
MTM7N15
MTM1N18
MTM7N20
MTM7N45

IRF233
IRF233
IRF232
IRF232
IRF441

MTM12N20
MTM15N05
MTM15N06
MTM15N12
MTM15N15

IRF242
IRF143
IRF143
IRF243
IRF243

MTP2N35
MTP2N40
MTP2N45
MTP2N50
MTP2N55

MTH7N40
MTH8N35
MTH8N40
MTH15N18
MTH15N20

IRFP342
IRFP343
IRFP342
IRFP242
IRFP242

MTM7N50
MTM8N08
MTM8Nl0
MTM8N12
MTM8N15

iRF442
IRF120
IRF120
IRF233
IRF233

MTM15N18
MTM15N20
MTM15N35
MTM15N40
MTM15N45

IRF242
IRF242
IRF351
IRF350'
SSM20N45

MTP2N60
MTP3N12
MTP3N15
MTP3N18
MTP3N20

IRF623
IRF623
IRF622
IRF620

MTH20N12
MTH20N15
MTH25N08"
MTH25Nl0
MTH35N05

IRfP253
IRFP253
IRFP140
IRFP140
IRFP151

MTM8N18
MTM8N20
MTM8N35
MTM8N40
MTM8P08

IRF232
IRF232
IRF343
IRF342
IRF9132

MTM15N50
MTM20N08
MTM20Nl0
M.TM20N12
MTM20N15

SSM20N50
IRF142
IRF142
IRF253
IRF253

MTP3N35
MTP3N40
MTP3N55
MTP3N60
MTP4N08

IRF721
IRF720
SSP4N55
SSP4N60
IRF510

MTH35N06
MTM2N45
MTM2N50
MTM3N35
MTM3N40

IRFP151
IRF421
IRF422
IRF321
IRF320

MTM8Pl0
MTM10N05
MTM10N06
MTM10N08
MTM10Nl0

IRF9132
IRF133
IRF133
IRF132
IRF132

MTM25N05
MTM25N06
MTM25N08·
MTM25Nl0
MTM35N05

IRF141
IRF141
IRF140
IRF140
IRF151

MTP4Nl0
MTP4N12
MTP4N15
MTP4N45
MTP4N50

IRF51 0
IRF623
IRF623
IRF833
IRF832 •

MTM3N55
MTM3N60
MTM4N45
MTM4N50
MTM5Ni8

SSM4N55
SSM4N60
IRF433
IRF432
IRF220

MTM10N12
MTM10N15
MTM10N25
MTM12N05
MTM12N06

IRF243
IRF243 .
IRF353
IRF133
IRF133

MTM35N06 IRF151
MTM40N18 . SSM40N20
MTM40N20 SSM40N20
MTP1N45
IRF823
MTP1N50
IRF822

MTP5N05
MTP5N06
MTP5N18
MTP5N20
MTP5N35

IRF523

MTM5N20
MTM5N35
MTM5N40
·MTM6N55
MTM6N60

IRF220
IRF333
IRF330
SSM6N55
SSM6N60

MTM12N08
MTM12Nl0
MTM12,N12
MTM12N15
MTM12N18

IRF132
IRF132
IRF243
IRF243
IRF242

MTP1N55
MTP1N60
MTP2N18
MTP2N20
MTP2N25

MTP5N40
MTP7N12
MTP7N15
MTP7f'J18
MTP7N20

International
Rectifier

IRFP343
IRFP350
IRFP351
IRFP~52

c8

SAMSUNG SEMICONDUCTOR

IRF612
IRF612
IRF723

\

SAMSUNG
Direct
Replacement

IRF723
IRF722
IRF823
IRF822

I~F523

IRF620
IRF620
'i~F731

IRF730
1Ri=633
IRF633
IFlF632
IRF632

56

PRODUCT GUIDE
CROSS REFERENCES GUIDE

(continued)

MOTOROLA

SAMSUNG
Direct
Replacement

SAM SUNG
Direct
Replacement

MTP8N08
MTP8Nl0
MTP8N12
MTP8N1S
MTP8N18
MTP8N20
MTP8P08
MTP8Pl0

IRFS20
IRFS20
IRF633
IRF633
IRF632
IRF632
IRF9S32
IRF9S32

MOTOROLA

MTP10NOS
IRFS33
MTP10N06
IRFS33
MTP10N08
IRF532
MTP10Nl0
IRFS32
MTP10N12 . IRF643
MTP10N1S
MTP10N2S
MTP12NOS

IRF643
IRF743
IRFS33

SAMSUNG
Direct
Replacel1!ent

MOTOROLA

SAMSUNG
Direct
Replacement

MTP12N06
,MTP12N08
MTP12N10
MTP12N18
MTP12N20
MTP1SNOS
MTP1SN06'
MTP1SN12

IRFS33
IRFS32
IRFS32
IRF642
IRF642
IRFS43
IRFS43
IRF643

SAM SUNG
Direct
Replacement

Siliconix

SAMSUNG
Direct
Replacement ..

VN30AA
VN33AJ
VN3SAA
VN35AJ
VN40AD

IRF123
IRF123
IRF123
IRF123
IRF513

VN0109NS
VNOll0Nl
VN0110NS
VNOl14N1
VN0114NS

IRFS12
IRF122
IRFS12
IRF223
IRF613

VN0300D
VN033ON1
VN0330NS
VN033SN1
VN0335NS

IRFS13
. IFlF323
IRF723
IRF323
IRF723

VN46AD
VN64AG
VN66AD
VN66AJ
VN67AA

IRFS13
IRF123
IRFS13
IRF123
IRF123

VNOl16Nl
VN0116N5
VN0120Nl
VN0120NS
VN0202Nl

IRF222
IRF612
IRF222
IRF612
IRF123

VN0340Nl
VN0340NS
VN034SAl
VN034SNl
VN034SNS

VN67AD
VN67AJ
VN88AD
VN89AA
VN89AD

IRFS13
IRF123
IRF512
IRF122
IRFS12

VN0202NS
VN0203N1
VN0203NS
VN0204N1
VN0204NS

IRFS13
IRF123
IRFS13
IRF123
IRFS13

VN90AA
VN98AJ
VN99AA
VN99AJ
VN0102Nl

IRF122
IRF122
IRF122
IRF122
IRF123

VN0206N1
VN0206NS
VN0208N1
VN0208NS
VN0209N1

VN0102NS
, VN0103N1
VN0103N5
VN0104Nl
VN0104N5

IRFS13
IRF123
IRFS13,
IRF123
IRF5i3
IRF123
IRFS13
IRF122
IRFS12
IRF122

VN0106Nl
VN0106NS
VN0108Nl
VN0108N5
VN0109Nl'

Siliconix

Siliconix

MOTOROLA

SAMSUNG
Direct
Replacement

MTP1SN1S : IRF643
MTP20N08 I IRFS42
IRFS42
MTP20N20
IRFS41
MTP2SNOS
IRFS41
MTP2SN06

Siliconix

SAMSUNG
Direct
Replacement

VN0801D
VN1000A
VN1000D
VN1001A
VN1001D

IRFS32
IRF130
IRFS30
IRF132
IRF532

IRF322
IRF722
IRF441
IRF421
IRF821

VN1102N1
VN1102NS
VNll03Nl
VN1103NS
VNll04Nl

IRF123
IRFS23
IRF123
IRFS23
IRF123

VN03S0Al
VN03S0Nl
VN03SSN1
VN0360N1
VN0400A

IRF440
IRF422
SSM4NSS
SSM4N60
IRF143

VNll04NS
VN1106Nl
VN1106N5
VN1109Nl
YNll09NS

IRFS23
IRF123
IRF523
IRF122
IRFS22

IRF123
IRF513
IRF122
IRFS12
IRF122

VN0400D
VN0401A
VN0401D
VN0430N1
VN043SNl

IRFS43
IRF143
IRFS43
IRF341
IRF341

VN1110Nl
VNlll0NS
VNll14Nl
VNll14NS
VN111SNl

IRF122
IRFS22
IRF223
IRF611
IRF223

VN0209NS
VN0210Nl
VN0210NS
VN0214N1
VN0214NS

IRFS12
IRF122
IRFS12
IRF223
IRF613

VN0440Nl
VN044SNl
VN04S0N1
VN0600A
VN0600D

IRF340
IRF4S3
IRF440
IRF,143
IRFS43

VN111SNS
VN1116Nl
VN1116.NS
VNl120Nl
VN1120NS

IRF611
IRF222
IRF612
'IRF222
IRF612

VN021SNS
VN0216N1
VN0216N5
VN0220Nl
VN0220N5

IRF613
IRF222
IRF612
IRF222
IRF612

VN0601A
VN0601D
VN0800A
VN0800D
VN0801A

IRF143
IRFS43
IRF130
IRF530
IRF132

VN1200A
VN1200D
VN1201A
VN1201D
VN1202Nl

IRF241
IRF641
IRF243
IRF643
IRF133

c8SAMSUNG SEMICONDUCTOR

57 '

PRODUCT GUIDE
CROSS REFERENCES GUIDE (continU~d)
SAMSUNG
Direct
Replacement

SAM SUNG
Direct
Replacement

SlIIconlx

SAMSUNG
Direct
. Replace-.
ment

IRF713
IRF331
IRF731
IRF333
IRF733

VP0109N5
VP0110N5
VP0114N5
VP0202N1
VP0202N5

IRF9512
IRF9512
IRF9613
IRF9133
IRF9513

VP1109N1
VP1109N5
VP1110N1
VP1110N5
VP1114N1

IRF9132
IRF9512
,IRF9132
IRF9512
IRF9233

VN3502A
VN4000A
VN4000D
VN4001A
VN4001D

IRF321
'IRF330
IRF730
IRF332
IRF732

VP0203N1
VP0203N5
VP0204N1
VP0204N5
VP0206N1

IRF9133
IRF9513
IRF9513
IRF9133

VP1114N5
VP1115N1
VP1115N5
VP1116N1
VP1116N5

IRF9611
IRF9233
IRF9611
IRF9232
IRF9612

IRF122
IRF522
IRF122
IRF522
IRF233

VN4002A
VN4501A
VN4501D
VN4502A
VN4502D

IRF320
IRF431
IRF831
IRF433
IRF833

VP0206N5
VP0208N1
VP0208N5
VP0209N1
VP0209N5

IRF9513
IRF9132
IRF9512
IRF9132
IRF9512

VP1120N1
VP1120N5
Vl'i1202N1
VP1202N5
VP1203N1

IRF9232
IRF9612
IRF9133
IRF9533
IRF9133

VN1215N5
VN1216N1
VN1216N5
VN1220N1
VN1220N5

IRF633
IRF222
IRF61 0
IRi=222
IRF61 0

VN5001A,
VN5001D .
VN5002A
VN5002D
VNLOO1A

.IRF4,3,O
IRF830
IRF432
IRF832
IRF331

VP0210N1
VP0210N5
VP0214N1
VP0214N5
VP0215N5

• IRF9132
IRF9512
IRF9233
IRF9613
IRF961,3

VP1203N5
VP1204N1
VP1204N5
VP1206N1
VP1206N5

IRF9533
IRF9133
IRF9523
IRF9133
" IRF9523

VN1.706D
VN2306N1
VN2306N5
. VN2310N1
VN2310N5

IRF612,
IRF141
IRF541
IRF140
IRF540

VNMOO1A
VNMOO2A
VNPOO2A
VNSOO8A
VNSOO8D

IRF330
IRF431
IRF430
SSM6N60
SSI"6N60

'VP0216N1
VP0216N5
VP0220N1
VP0220N5
VP0335N1

IRF9232
IRF9612
IRF9232
IRF9612
(IRF9232)

VP1208N1
VP1208N5
VP1209N1
VP1209N5
VP1210N1

IRF9132
IRF9522
IRF9132
IRF9522
IRF9132

VN2315N1
VN2315N5
VN2320N1
VN2320N5
VN2330N1

IRF241
IRF641
IRF242
IRF642
IRF341

VNSOO9A
VNSOO9D
VNTOO8A
VNTOO8D·
VNTOO9A'

SSM5N60
SSP5N60
SSM6N70
SSP6N70
SsM6N70

VP0335N5
VP0340N1
VP0340N5
VP0345N1
VP0345N5

(IRF9612)
(lRF9232)
(IRF9612)
(IRF9232)
(IRF9612)

VP1210N5
VP1215N1
VP1215N5
VP1216N1
VP1216N5 '

IRF9522
IRF9233
IRF9621
IRF9232
IRF9610

VN2330N5
VN2335N1
VN2335N5
VN2340N1
VN2340N5

IRF741
IRF341
IRF741
IRF340
IRF740

VNTOO9D
VP0102N5
VP0103N5
VP0104N5
VPOlO6N5

SSI"6N70
IRF9513
IRF9513
IRF9513
IRF9513

VP1102N1
VP1102N5
VP1103N1
VP1103N5
VP1104N1

IRF9133
IRF9523
IRF9133
IRF9523
IRF9133

VP1220N1
VP1220N5
ZVN0102L
ZNV0106L
ZNV0108L

IRF9232
IRF9610 .
IRF513
IRF513
IRF512

VN2345N1
VN2350N1 .
VN2350N5

IRF453
IRF442
IRF842

VP0108N1
VP0108N5
VP0109N1

IRF9132
IRF9512
IRF9132

VP~104N5

VP1106N1
VP1106N5

IRF9513·
IRF9133
IRF9513.

Siliconix

SAMSUNG
Direct
Replacement

VN1202N5
VN1203N1
VN1203N5
VN1204N1
VN1204N5

IRF533
IRF133
. IRF533
IRF123
IRF523

VN1206D
VN1206N1
VN1206N5
VN1208N1
VN1208N5

IRF613
IRF123
IRF523
IRF122
IRF522

VN1209N1
VN1209N5
VN1210N1
VN1210N5
VN1215N1

SlIIconix
VN2406D
VN3500A .
VN3500D
VN3501A
VN3501D.

SlIIconlx

IRF~133

) Samsung number in parentheses ; Package alter native on possible substitution

c8

SAMSUNG SEMICONDUCTOR

58

PRODUCT GUIDE
CROSS REFERENCES GUIDE' (continued)
SAMSUNG
Direct
Replacement

GE

GE

SAMSUNG
Direct
Replacement

GE

084!3K1
084BK2
b84BK4
084BL1
084BL2

IRF523
IRF523
IRF511
IRF510
IRF510

0840L2
0840L3
0840L4
0840M1
0840M2

IRF530
IRF532
IRF532
iRF631
IRF631

084CL2

084BL3
084BL4
084BM1
084BM2
08~BM3

IRF512
IRF512
IRF611
IRF611
IRF611

0840M4
0840N1
0840N2
0840N3
0840N4

084BM4
084BN1
084BN2
084BN3
084BN4

IRF613
IRF610
IRF61 0
IRF612
IRF612

084B01
084B02
084B03
084B04
084CK3

SAMSUNG
Direct
Replacement

GE

SAMSUNG
Direct
Replacement

086CM2
086CM4
086CN2

IRF120
IRF122
IRF221
IRF221
IRF220

086EK4
086EL4
086EM1
086EM2
086EM4

IRF151
IRF142
IRF253
IRF253
IRF241

IRF631
IRF630
IRF630
IRF632
IRF632

086CN3
086CN4
086C01
086C02
086C03

IRF222
IRF222
IRF321
IRF320
IRF323

086EN2
086EN3
086EN4
086E01
086E02

IRF240
IRF242
IRF242
IRF341
IRF340

084001
084002
084003
084004
0840R1

IRF731
IRF730
IRF733
IRF732
IRF831

. 086C04
086CR1
086CR2
086CR3
086CR4

IRF322
IRF421
IRF420
IRF423
IRF422

086E03
086E04
086ER1
086ER2
086ER3

IRF343
IRF342
IRF441
IRF440
IRF443

IRF711
IRF710
IRF713
IRF712
IRF521

0840R2
0840R3
0840R4
0840S1
0840S2

IRF830
IRF833
IRF832
(lRF832)
(lRF832)

0860K1
0860K2
0860K3
0860K4
0860L1

IRF131
IRF131
IRF133
IRF133
IRF130

086ER4
086ES1
086ES2
086EU2
086EV1

IRF442
(IRF430)

084CK4
084CL2
084CL4
084CM2
084CM4

IRF521
IRF520
IRF522
IRF621
IRF623

084EL2
084EL4
084EM2
084EM4
084EN2

IRF540
IRF542
IRF641
IRF643
IRF640

0860L2
0860L3
0860L4
0860Ml
0860M2

IRF130
IRF132
IRF132
IRF231
IRF231

086EV2
086EW1
086EW2
086FL2
086FL4

(IRF422)
(IRF422)
(IRF422)
IRFl50
IRF152

084CN1
084CN2
084CN3
084CN4
084C01

IRF620
IRF620
IRF622
IRF622
IRF721

084EN4
084EOl
084E02
084E03
084004

IRF642
IRF741
IRF740
IRF743
IRF742

0860M3
0860M4
0860N1
0860N2
0860N3

IRF231
IRF231
IRF230
IRF230
IRF230

086FM2
086FN2
086FN4
086F01
086F02

IRF251
IRF250
IRF252
IRF351
IRF350

084C02
084C03
084C04
084CR1
084CR2

IRF720
IRF723
IRF722
IRF821
IRF820

·084ER1
084ER2
084ER3
084ER4
084EU2

IRF841
IRF840
IRF843
IRF842
(lRF820)

0860N4
086001
086002
086003
086004

IRF230
IRF331
IRF330
IRF333
IRF332

086F03
086F04
086FR1
086FR2
086FR3

IRF353
IRF352
IRF451
IRF450
IRF453

084CR3
084CR4
D840K1
0840K2
0830K3

IRF823
IRF822
IRF531
IRF531
IRF533

084EV1
084EV2
084EW1
084EW2
086CK2

(IRF822)
(IRF822)
(IRF822)
(IRF822)
IRF131

0860R1
0860R2
D860R3
0860R4
OB60S1

IRF431
IRF430
IRF433
IRF432
IRF432

086FR4
086FU2

IRF452
(IRF432)

0840K4
0840L1

IRF533
IRF530

086CK3
084CK4

IRF121
IRF121

0860S2
086EK3

(IRF432)
(IRF432)

086~L4

II

(IRF43~

(IRF420)
(lRF422)

•

) Samsung number in parentheses : Package alter native on possible substitution

c8

SAMSUNG SEMICONDUCTOR

59

, PRODUCT, GUIDE
CROSS REFERENCES GUIDE

(continued)

RCA

SAMSUNG
Direct
Replacement

RCA

SAMSUNG
Direct
Replacement

RCA9192A
RCA9192B
RCA9195A
RCA9195B
RCA9212A

IRF120
IRF243
IRF142
IRF253
IRF520

RFM3N45
RFM3N5O
RFM4N35
,RFM4N40
RFM5P12

IRF421
IRF420
IRF321 '
IRF320,
IRF9231

RFM15N12 IRF253
RFM15t:J15 IRF253
RFM18N08 IRF142
RFM18N10 IRF142
RFM25N05 ' IRF14t

RFP5P12
RFP5P15
RFP6P08
RFP6P10
RFP7N45'

IRF9631
IRF9631
IRF9520
IRF9520
IRF831

RCA9212B
RCA9213A
RCA9213B
RCA9230A

IRF643
IRF512
IRF613
IRF542

RFM5P15
RFM6P08
,RFM6P10 '
RFM7N45
RFM7N5O

IRF9231
IRF9132
IRF9232
IRF431 '
IRF430

RFM29N06
RFP1N35
RFP1N40
RFP2N08
RFP2N10

IRF141
IRF713
IRF712
IRF512
IRF512

RFP7N5O
RFP8N18
RFP8N20
RFP8N08
RFP8N10

IRF830
IRF630
IRF630
IRF9532
IRF9532

RFK15N35
RFK15N40
RFK15N45
RFK15N50
RFK20P08

IRF353
IRF352
IRF441
IRF440
IRF91.40

RFM8N18
RFM8N20
RFM8P08
RFM8P10
RFM10N12

IRF230
IRF230
IRF9132
IRF9132
IRF243

RFP2N12
RFP2N15
RFP2N18
RFP2N20
RFP2P08

IRF611
IRF611
IRF612
IRF612
IRF9512

RFP10N12
RFP10N15
RFP10P12
RFP12N08
' RFP12N10'

IRF643
IRF643
(lRF9532)
IRF530
IRF530

RFK20P10
RFK25t-118
RFK25N20
RFK30N12
RFK30N15

IRF9140
IRF252
IRF252 ,
IRF251
,IRF251

RFM10N15
RFM10P12
RFM10P15
RFM12N18
RFM12N2o-

IRF243
IRF9241
IRF9241
,IRF242
IRF242

RFP2P10
RFP3N45
RFP3N5O
RFP4N05
RFP4N06

IRF9512
IRF821
IRF820
IRF513
IRF513

RFP12N20
IRF642
RFP15N05, IRF543
RFP15N06
IRF543
RFP15N12 (IRF643)
IRF542
RFP18N10

RFK35N08
RFK35N10

IRF150
IRF150

RFM'1SN05
RFM15N06

IRF143
IRF~ 43

I'lFP4N35
RFP4N40

IRF721
IRF720

RFP25N05

SAMSUNG
Direct
Replacement

BUZ10
BUZ10A
BUZ10B
BUZ11A
BUZ14A

RCA

SAMSUNG
Direct
Replacement

IRF541

Siemens

SAMSUNG
Dlrecit
' Replacement

Siemens

SAMSUNG
Direct
Replacement

BUZ41A
BUZ41B
BUZ42
BUZ42A
BUZ42B

IRF830
IRF831
IRF832 '
IRF833
IRF820

BUZ60B
BUl60C
BUZ60D
BUZ63
BUZ63A

IRF732
IRF733
IRF720
IRF330
IRF331

BUZ42C
BUZ44
BUZ44A
BUZ44B
' BUZ45

IRF821
IRF422
IRF431 .
IRF452

BUZ63B
BUZ63C
BUZ63D
BUZ64
BUZ64A

IRF332
IRF333
IRF320
IRF352
IRF353

IRF231
IRFP353
IRFP453
IRFP453
IRF252

BUZ45A
BUZ45B
BUZ45C
BUZ46
BUZ46A

IRF452
IRF452
IRP453
IRF432
IRF433

BUZ67
BUZ71
BUZ71A
BUZ72A
BUZ73A

IRFP340
IRF541
IRF543
IRF532
IRF632

IRFP242
IRFP240
IRFP353
IRFP440
IRF840

BUZ46B
BUZ48
BUZ48A
BUZ60
BUZ60A

IRF420
IRFP450
IRFP452
IRF730
IRF730

BUZ74
BUZ74A
BUP6
BUZ7,6A

Siemens

SAMSUNG
Direct
Replacement

IRF541
IRF543
IRF533
IRF543
IRF151

BUZ25
BUZ27
BUZ28
BUZ31
BUZ32

IRF140
IRFP140
IRFP141
IRF640
IRF630

BUZ14B
BUZ17
BUZ18
BUZ20
BUZ20A

IRF153
IRF153
IRF151
IRF530
IRF532

BUZ32A
BUZ32B
BUZ32C
BUZ34
BUZ35

IRF631
IRF632
IRF633
IRF240
IRF230

BUZ20B
BUZ201
BUZ21
BUZ211
BUZ23

IRF520
IRF353
IRF540
IRF452
IRF130

BUZ35A
BUZ351
BUZ353
BUZ354
BUZ3e

BUZ23A
BUZ23B
BUZ24
BUZ24A
BUZ24B

IRF130
IRF120
IRF150
IRF150
IflF152

BUZ237
BUZ38
BUZ382
BUZ385
BUZ41

Slemena

RCA

SAMSUNG
Direct
Replacement

I~F430

IRF82'O
IRF822
IRF720
. IRF722

) Samsung number in Parentheses : Package alter native on possible substitution

c8 SAM~UNG

SEMICONDUCTOR

60

N-CHANNEL
POWER MOSFETS

IRFA 1ZO/1 Z3
FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-126 package

TO-126

PRODUCT SUMMARY
I

Part Number

VDS

RDS(on)

ID

i

IRFA1Z0

100V

2.4 0

0.5A

IRFA1Z3

60V

3.20

O.4A

t

MAXIMUM RATINGS
Symbol

IRFA1Z0

IRFA1Z3

Unit

Drain-Source Voltage (1 )

Voss

100

60

Vdc

Drain-Gate Voltage (RGs= 1 .OMOI(1)

VOGR

100

Gate-Source Voltage

VGS

Characteristic

Continuous Drain Current Tc=25°C
Continuous Dniin Current Tc = 1 00 ° C
Drain Current-Pulsed (3)
.Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

I

60
±20

Vdc
.
Vdc

10

0.5

0.4

Adc

10

0.3

0.25

Adc

10M

4.0

3.2

Adc

Po

1.0
0.008

Watts
W/oC

TJ, Tstg

-55 to 150

°C

TL

300

·C

Maximum !-ead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

NOTES: (1) TJ=25°C to 150°C

(2) Pulse test: Pulse width"300"s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width Umited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

63

N~HANNEL

IRFA1Z0/1 Z3

.POWER MOSFETS

ELECTRICAL CHARACTERISTICS
C,haracterlstlc

Symbol

Drain-Source Brea~down
Voltage

-.

BVoss

Type

Min Typ

IRFA1Z0 100
IRFA1Z3 60

Gate Threshold Voltage

VGS(th)

ALL

2.0

Gate-Source Leakage Forward

IGSs

ALL

Gate-Source Leakage .Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

On-State Drain-Source
Current (2)

10(on)

IRFA1Z0 0.5
IRFA1Z3 0.4

Static Drain-Source On-State

ROS(an)

Resistance (2)

IRFA1Z0
IRFA1Z3

Forward Transconductance (2)

gls

ALL

Input Capacitance

.CiSS

ALL

Output Capacitance

Coss

ALL

(Tc=25°C unless otherwise specified)

-

-

-

Test Conditions

Max Units

-

V

VGs=OV

V

lo=250j.tA

4.0

V

Vos=VGS, 10:=25OIlA

100

nA VGs=20V

-100 nA VGS=-20V
250

".A Vos=Max. Rating, VGS=OV

-

1000

".A Vos=Max. RatingXO.8, VGS=OV, Tc=125°C

'-

A

1.5

2.4

'0

2

3.2

A

...

Vos>lo(on)XRos(o~) max, VGS= 1OV

- VGs=10V,lo=0.25A

0

-

0

65

70

pF

24

30

pF VGs=OV, Vos=25V, f=1.0MHz

9

100

pF

10

20

ns

0.25 0.35

Vos>IO(on)XROS(on) max, 10=0.25A

Reverse Transfer CapaCitance

Cras

ALL

Tum-On Delay Time

leI(on) .

ALL

-

tr

ALL

15

25

ns

td(off)

ALL

15

25

tl

ALL

10

20

ns

Qg

ALL

2.0

3.0

Gate-Source Charge

Qgo

ALL

0.6

-

Gate-Drain ("Miller") Charge

Qgd

ALL

-

. Voo=0.5BVoss, 10=0.25A, Zo=50'0
(MOSFET switching times are essentiaHy
ns independent of operating temperature.)

nC VGs=10V, 10=1.2A, Vos~0.8Max. Rating
(Gate charge is essentially independent of
nC operating temperature.)
nCo

Rise Time
Tum-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

1.4

-

THERMAL RESISTANCE
Junction-to-Ambient

.SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current

Is

(Body Diode)
Pulse Source Current

ISM

(Body Diode) (3)
Diode Forward Voltage (2)

,

VSD

'Reverse Recovery Time

trr

Type

Min typ

IRFA1Z0
IRFA1Z3
IRFA1Z0
IRFA.1Z3
IRFA1Z0
IRFA1Z3
ALL

-

Max Units

- 0.5.
- 0.4
- 4.0
- 3.2
- - 1.4
- - 1.3
- 100 -

A
A
A

Test Conditions

MOdfl"
MooFET.,_
showing the integral

~
G'

reverse P-N junction reotifier

S

A
V

Tc";25°C, Is=0.5A, VGS=OV

V

Tc=25°C, Is=O.4A, VGS"'OV

ns

TJ=150°C, IF=0.5A, dIF/dt=100Al".s

Not..: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width.. 300".s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. Junction temperature

c8'SAMSUNG SEMICONDUCTOR

64

N-CHANNEL
POWER MOSFETS

IRF A1ZO/1 Z3
2. 4

VGS

lOV

1. 0

~PuJseTest

~PuI8e)e&t

V -9V

V".>I

1

20

v

IJf- "-TJ-12~oC

_

~ ....... T =-S5°C
TJ -25°C

I

J

=8V

I

6

I

2

~x'"

~""'7V

J
.'!oo.=I.V

J

4
V
V

o

10

20

30

40

o

60

6

8

10

12

14

Typical Transfer Characteristics

10

2.0
80J Pulse Irest

~~GSc1OV
V ==9V

/

W'/ -iL rL'

Iii

w
w

"

a.

1.2

'13
iiia.

IE
~

I-

Vas- 7V

Z
w

""::>

~

"Cz

vGS=el

l§
.9

I/,V

0

j.V
~

10..

Ali21"

I

I. .

W
~V

0.8

OPERATION IN THIS AREA I

17' IS UMfED BY

5 IRFA1Z0,1

V",=8~

'L

1.6

04

TJ =--S5jC

V.... GATE·T0-80URCE VOLTAGE (VOLTS)

Typical Output Characteristics

""::>
"
~
"
.9

~VJ
4

2

VD•• DRAIN-TO-SOURCE VOLTAGE (VOLTS)

~
!Zw

TJ =2SoC

II/)

,.J.V
,J.V
50

TJ"'25°~

1

2

2

1. 0 - · ·
/RFA1ZO.1

5

2
O. 1
5

lme

I-----

vGS=sl
~-Jv

,
, ,

IRFA1Z2,3

J-1SO;C MAX.

,Oms
Pp~~i+1-+-H''IoI:tI'IC
=+-t+tttf-H
0.02,l--rSI4~
I I 11111
~l'F! "f

VD.. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

IRFAlZ1 "
5
10
20
50
100 200
500
V... DRAIN-TO-8OURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum Safe Operating' Area

1

2

3

1.0

4

,

1. 0

10
Vos>fIX"'lIxRoslonl max
a~ Pulse Test

5

0.8

2

0.6

V
~V

0.4

o. 2

o

~ 'L
/,

~

--

TJ'=-55°C

0

TJ ""25"C

5

'TJ =125°C

TJ =150·C-

~

-

~

?

~

,

5

J'J

TJ -150°C/

2

If

71t 1
25 C

o.1
0.25

0.5
075
1.0
10. DRAIN CURRENT (AMPERES)

Typical Transcounductance Vs. Drain Current

c8

TJ =25°C

SAMSUNG SEMICONDUCTOR

1.25

0.4

08

1.2

1.6

2.0

2.4

V.D. SOURCE·To-DRAIN VOLTAGE (VOLTS)

Typical Source-Drain Diode Forward Volta"e

65

N.;.CHANNEL
'POWER MOSFETS

.IRFA1Z0/1Z3
1.25

2. 5

..,.i-'"
k'

/

0

V

.".

... V

5

. . . 1--'

i

V V

51-"""

./

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

,

v!-ov

f=1 MHz

1\

li
~
~

-40

I

\

cj

1-

""

20

Cgs+Cgd
::;: Cds+Cgd.

Co.
08=2 V

. V"'=50~:3\ ~V'

·5

10

'I--

/) V

--

Cosa

t--

d..

5

~ ~ MELREJWrrH L~ puJe
DURATION

50

1.0

o.

5f'

r-- r-INITIAL TJ=25°C. (HEATING
OF

EFFECT OF 2.0¢Ii PULSE IS MIIIIMAL •

I!

6

iB

VGS -1OV

4

z

--

:2

3.0

4.0

o

2

3

4

10. DRAIN CURRENT (AMPERES)

SAMSUNG SEMICONDUCTOR

5.0

'" f'.
1""-

i"'-

o. 3

l'..

IRFA1Z3

0 .2

f"".

'"

IRFA1Z0

.......

...... "-

"I\.

~

~

,

o.1

\\

,..,...,...Vas -2DV

Typical On-Reslstance Vs. Drain Current

.c8

O. 4 ........

i

j

2.0,

ag. TOTAL GATE CHARGE (nC)

Typical Gate Charge Vs, Gate-To-Source Voltage

8

J

1o=12A'

/

V

10 15
20
25 30
35 40 45
V... DRAIN-TOoSOURCE VOLTAGE (VOLTS)

2.~

J. W

ILL

""""-- t--

Typical Capacitance Va. Drain to Source Voltage

2

160

0

Cosa-Cds+~

0

i'.,.

o

40
80
120
T... JUNCTION TEMPERATURE (OC)

(\

I\.

40

0

Normalized O....Reslstance Vs. Temperature

V08=80V, ,jRFA1ZQ

()

~

I

-

\
\

60

COso-Cgo+Cgd, Cd.
Cnm=Cgd

ID=O 25A

o

160

Breakdown Voltage Vs. Temperature

-........

iw

Vas-1OV

"""

0.75
40

80

lL

V V

5

100

V

0
25

50
75
100
125
T•• AMBIENT TEMPERATURE (OC)

150

Maximum Drain Current Vs. Case Temperature

66

N-CHANNEL

IRFA1Z0/1Z3 .

POWER MOSFETS

1.6
1.4

~

1

~

1.0

z

I~
II:

~

O.

2

,

..

'" "',,-

6

0.6

i o. 4
,f

f'.-.

O. 2

o

20

40

60

80

'" "

100

120

.

~

140

160

TA. AMBIENT TEMPERATURE (·C)

Power Vs. Temperature Derating Curve

I

c8sAMSUNG SEMICONDUCTOR

67

i

N-CHANNEL
POWER,MOSFETS

IRF12011-211122i123
FEATURES
•
•
•
•
•
•
•
•

!.ow ROS(on)
Improved Inductive ruggedness
Fast switching times
RU$Jged polysilicon gate cell structure
Low Input capacitance,
Extended safe operating area
Improved high temperature reliability
10-3 package (Standard)

T0-3

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRF120

100V

0,300

8,OA

"

IRF121

60V

0.300

8.0A

IRF122

100V

0.400

7.0A

IRF1.23

60V

0.400

7.0A

MAXIMUM RATINGS
Characteristic

Symbol

IRF120

IRF121

IRF122

IRF123

Unit

Voss

100

60

100

60

Vdc

VOGR

100

60

100

60

Vdc

10

8.0

8.0

7.0

·7.0

Adc

.10

5.0

5.0

4.0

4.0

Adc

10M

32

'32

28

28

Adc

Drain-Source Voltage (1)
Drain-Gate Voltage (RGs=1.0MOI(1)

' VGS

Gate-Source Voltage
Continuous Drain. Current Tc= 25 ° C
Continuous 'Drain Current Tc=1 OO°C
. Drain Current-Pulsed (3)

±20

Vdc

Gate Current-Pulsed

IGM

±1.5

Adc

Total 'Power Dissipation @ Tc=25°.C
Derate above 25°C

Po

40
0.32

Watts

W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°c

Operating and Storage
Junction Temperature Range

;

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse width.. 300jAS, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

~c8SAMSUNG,SE~ICONDUcroR

68

N-CHANNEL
IRF120112111221123

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

BVoss

Type

Min Typ

-

V

VGs=OV

IRF121
60
IRF123

-

V

io= 25OIlA

IRF120
8.0
IRF121

-

IRF122
7.0
IRF123

-

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

On-State Drain-Source
Current (2)

lo(on)

Static Drain-Source On-State
Resistance (2)

ROS(e,")

ALL

IRF120
IRF121

-

IRF122
IRF123

-

4.0

V

Vos=VGs. 10=2501lA

100

nA

VGS=20V

-100

nA

VGs=-20V

250

~A

Vos=Max. Rating. VGs=OV

1000

JAA

Vos=Max. RatingXO.8. VGs=OV.Tc=125°C

-

A

-

A

Vos>lo(on) X ROS(on) max .• VGs= 1 OV

0.23 0.30

0

0.30 0.40

I)

VGs=10V.lo=4.0A

Forward Transconductance (2)

gfo

ALL

1.5

3.1

-

0

Input Capacitance

Ciss

ALL

-

460

600

pF

Output Capacitance

Coss

AL.L

-

220

400

pF

Reverse Transfer Capacitance

C,os

ALL

70

100

pF

Turn-On Delay Time

Id(on)

ALL

40

ns

t,

ALL

-

70

ns

100

ns

70

ns

9.8

15

nC

3.5

-

nC

3.12

K/W

Rise Time
Turn-Off Delay Time

td(Off)

ALL

tf

ALL

Qg

ALL

Gate-Source Charge

Q gO

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

Test Conditions

-

VGS(th)

loss·

Max Units

IRF120
100
IRF122

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

-

6.3

Vos>lD(on)XROS(on) max .• 10=4.0A

VGS=OV. Vos=25V. f= 1.0MHz

Voo=0.5BVoss. lo=4.0A. Zo=500
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. 10=10A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature. )

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

Case-to-Sink

RthCS

ALL

Junction:to-Ambient

RthJA

ALL

ALL

-

0.1

-

K/W Mounting surface flat. smooth. and greased

-

30

KlW Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width~300JAs. Duty Cycl~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG

SEMICO~DUcrOR

69

N-CHANNEL

'IRF120112111221123

POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vsc

Type

Min Typ

Max Units

Test Conditions

IRF120
IRF121

-

-

8.0

A

IRF122
IRF123

-

-

7.0

A

IRF120
IRF121
IRF122
IRF123

-

-

32

A

-

-

28

A

IRF120
IRF121

-

-

2.5

V

Tc=25°C, Is=8.0A, VGs=OV

IRF122
IRF123

-

-

2.3

V

Tc=25°C, Is=7.0A, VGs=OV

Reverse Recovery Time

showing
' " the
MOSFET
integral""",.
reverse P-N junction rectifier

~J .
G

s

-

ALL
280
trr
ns TJ=150°C, IF=8.0A, dIF/dt=100AljlS
Notes: (1) TJ-25°C to 150°C (2) Pulse test: Pulse wldthlD(.,.IXR~on) .......

J ~ TJ-I'25~C~ I - I

,vas1av r--

I

~TJ"25°C

2

I---

II
I[

8

I

8

TJ.!-55°C

I

Vosl7V r--

2

Vas- BV

VO)SV r--

4

4

J

jJ
f--T"T5~ W'
TJ =125°C,

T"=25°~;:<

Vo:s=4V

10

20

30

40

50

60

2

VDS, DRAIN-TO-8CURCE VOLTAGE (VOLTS)

4

6

8

10

12

14

V... GATE-T0-80URCE VOLTAGE (VOLTS)

Typical Output Characteristics

Typical Transfer Characteristics

102
OPERATION IN THIS
AREA IS UMlTfiD

5

BV_

,-

~.!22,.1
IAF 121,3

2

II

a

1",,"

i'

IRF112Q,1

10",,"

IRF 121,3

5

/

I

2

lms

" r....

0:::::::,;J2' O C

1 Oms

==;J-150°C !4

'100ms

5=:~;::~~

I

2

II

1
2
3
4
Ves, DRAIN-T0-80URCE VOLTAGE (VOLTS)

TypiQal Saturation Characteristics

c8

D.C
IRF 120,2

IRF 121,3

SAMSUNG SEMICONDUCTOR

j II

o.1
1.0

2

5

I
10

20

II

50

100 200

500

V... DRAIN-T0-80URCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

70

N;'CHANNEL
POWER MOSFETS

IRF120/121/122/123

i~i
!l!::>

,,15

15~~Z
~~

it

Ii
(~

10

Iti
~
;;
"'

0,.0.5

0.5

~Ii

0-0.2

0.2
0=01

o. 1

.....

0-0.05

Ifl..SL
~,--j

SINGLE PULSE (TRANSIENT

0-002

0.05

NOTES

~

THERMAL IMPEDANCE)

~1

1 Duty Factor, D=-i;

I-"
002

~
0.0 1

2 Per Umt Base=RIh£=3. 12 Ceg CIW
3 T..u-Tc=Pouz...c (t)

.

10-

~

10

10-

2

5

,

10-

5

~~

10-,

1-1- ...L.U..ll
2

10

11. SQUARE WAVE PULSE DURATION (SECONDSI

Maximum Effective Transient Thermal Impedance Junctlon-to-Case Vs. Pulse Duration

5

,......

V ,......
V V
V V V t-"

4

3

L.- ~

....

-I-I--

103
TJ =-5S"C

~

TJ =25"C

i

TJ =125"C

~

Jrl V

::>
u

i

Vos>lDlonlX~",""

BO"s Pulse 1est,'_

1/

f--

1

!

..

't::::::

F
5~'

10

~~

i

~~
i~

.. c

I"-

TJ ""150"C

o

oC

1

3

Typical Source-Drain Diode Forward Voltage

2. 5

1.1 5

0

V V

1.05

0:0:

g~ 0.95 /

V

....... i--'

V

5

..... V

.

u::&

./

. /V

... V

0

~-

i:!I

'TJ -150"C'

VSD•. SOURCE·TCHlRAIN VOLTAGE (VOLTS)

125

~

;...

0

Typical Transconductance Vs. Drain Current

g

i::='

,

'(

r- J"i TJ""r
1.0
20

~

TJ "'25"C . : -

~!

2

j

8
12
16
10. DRAIN CURRENT (AMPERES)

II

2

z

rl
1/

2

5.

0:

.........
0.85

..... "......

VGS -1OV
ID =4A-

-

5

=

~

0.7 5

40

o

40
80
120
TJ. JUNCTION TEMPERATURE ("C)

Breakdown Voltage Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

160

o
-40

o

40
80
120
TJ. JUNCTION TEMPERATURE ("C)

160

Normalized On-Resistance Vs. Temperature

71

N-CHANNEL
I~F120/121/122/123
1000

POWER' MOSFETS
5

~"=1

I-I MHz.
C-.-=Cga+Cgd,

CIO(on)X ROS(on) max .• VGS= 1 OV

-

0.20 0.25

n

VGS'?' 1OV. 10=8.0A

-

CISS

-

n

4.0

Coss

A

0.10 0.18

ALL

Inpui Capacitance

-

-

gl.

Output Capacitance

Rise Time

Test Conditions

-

ALL

loss

Max Units

IRF130
100
IRF132

VGS(th)

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

5.5

-

(J

680

800

pF

300

500

pF

100

150

pF

-

30

ns

75

ns

40

ns

45

ns

18

30

nC

6.0

-

nC

12.0

Vos>IO(on)XROS(on) max .• 10=8.0A

VGs=OV. Vos=25V. f=1.0MHz

Voo=0.5BVoss. 10=8.0A. Zo=15 n
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. 10=18A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature. )

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

,

-

1.67

K/W

0.1

-

K/W Mounting surface flat. sm()()th. and greased

-

30

K/W Fre'e Air Operation

Notes: (1) TJ=25°C to 150°C.
(2) Pulse test: Pulse width~300IAs. Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

74

N-CHANNEL
POWER MOSFETS

IRF130113111321133

•
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Type

Min Typ

Max Units

Test Conditions

IRF130
IRF131

-

-

14

A

IRF132
IRF133

-

-

12

A

IRF130
IRF131

-.

-

56

A

IRF132
IRF133

-

48

A

IRF130
IRF131

-

-

2.5

V

Tc=25°C, Is=14A, VGs=OV

IRF132
IRF133

-

-

2.3

V

Tc=25°C, Is=12A, VGs=OV

Q{J

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

Reverse Recovery Time
ALL
360 ns TJ'=.150°C, IF=14A, dli=/dt=1 OOA/fAs
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth';;300fAs, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
24

Vas

,

20

10V

VGSi 8V -

80¢5 Pulse Test

BOfAs Pulse Test

20

iii
w
II:
w

...lE
w

II:
II:

16

iii
w

1

II:
W

VGS- 7V

16

I

I

12

"

VGS

U
Z

...lE

I
I

1/

~

....z

VOS>ID1oo1XAD6(onl m..

I

~

....z

"
U

E

125¢C

T,'25'C;'::TJ=-55°C

Q

I

I

TJ

~
0:

I

Q

E

VGS=5V

20

30

40

50

~'/
80

3

Vos, DRAIN-TO-SOURCE YOL TAGE (YOLTS)

a61ls PUI~ Tesl

6

9

YGS, GATE-TO-SOURCE YOLTAGE (YOLTS)

Typical Transfer Characteristics

Typical Output Characteristics

10

A

If)
~

1//

I
VGs=4V

10

II

I

w

II:
II:

lav
I

C

II:

I

12

I
I

10 2
.VGS-10v;';VGS =7V

VGs=6V

OPERATION IN THIS AREA IS LIMITED BY Ros ",,)

_I!!' 30,1

iV
II'

IRF132,3-

2

I'.
IRF130,l

1O""

"

IRF132,3_

J

100~

I

1m,

I

lams

V

Vas =5VlOOms

f-- Tc-25°C
~:rl~OOC

If

I

1/

r-SiNGIIIII

Vas 4V

01

04
0.8
12
1.6
YOS, DRAIN-TO-SOURCE YOLTAGE (YOLTS)

Typical Saturation Characteristics

c8

DC

MAX
f--RtI1JC-l.67 KIW

SAMSUNG SEMICONDUCTOR

20

10

2

LU II

-

tTI,·
3

IRF13f'2

5
10
20
50
100 200
500
YOS, DRAIN-TO-SOURCE YOLTAGE (YOLTS)

Maximum Safe Operating Area

75

N-CHANNEL

•

IRF130/13111321133

POWER MOSFETS

0
0 ... 0.5

5

I--" [!.::1i/iIii

0~O.2

2

j.ooo

D1O.J

NOTES

IILJL
p~

~~AiU~E~~

0-0.02

5 0-0.01

....

WI

_10- ..... 1.1

.;Jo.ds

1

~i--j

I,

~

,

1. Duty Factor. D"~
t•.
2. Per Unit Baae-RIhJC -1.67 Ceg/OIW.

2

3. TJrrTc""'PDMZt...c (t).

1

.1(t<

5

1

-3·

2

5

10-,

I 11111i'
2

5

lO-

I I IIIII

1

5

10

ll. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junctlon- to-Case Vs. Pulse Duration

0

10

L

6

......
....... ~
I-V ....... I--

T~_25O

0
5

~ L""

2

iV

2

VtiVlo."'}IXRD8(OIl) _

0

8O!lS Pulse Test .:.--

1L
V

0

,

5

Tr 15?OC

J

2
5

10

15

20

0.1

25

0.5

2

2.5

Typical Source-Drain Diode Forward Voltage

0

i.,...-' ~

V

5

~

V

"

V

I-'

... V

V

/V
./

J

5

o

40

80

120

TJ, JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

SAMSUNG SEMICONDUCTOR

V

....... ~

.,

t

1.5

2, 5

5

-40

1

VSO, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

1,25

0.75

TJ =2SoC

I I

ID, DRAIN CURRENT (AMPERES)

Typical Transcounductance Vs. Drain Current

51-""'"

TJ 150°0-

~

2

--L25'~

Y/ I-' J..-

T~-25°C

5

.T~ __ 55lc

160

I-""'"
o. 5
Vos-10V
lo""BA

0
-40

0

40

80

120

180

TJ, JUNCTION TEMPERATURE ('C)

Normalized On-Resistance Vs. Temperature

76

N-CHANNEL
.~ rpOWER

IRF130/131/132/133
2000

25
VGS-o
f=1 MHz
CISS-Cgs+Cgd, Cds SHORTED
"",-Cod
Coss=Cds+ CgsCgd
Cgs+Cgd
I¥Cds+Cgd

I

1600

I

o\

5

l\

vlIS-sov,

,\ \

"'

1\
400

MOSFETS

\' :-....

\

...

<>..

I'--

Coso

0

IAF1~

.A!

1/

10

20

ID-18A

1

I

"'"

o

~::::~ ~ ~

30

40

o

50

8

1~

24

32

40

Y.S. DRAIN-TCl-SOURCE YOLTAGE (YOLTS)

0". TOTAL GATE CHARGE (nC)

Typical Capacitance Vs. Drain to Source Voltage

Typical Gale Charge VB. Get.To-Source Voltage

20

0.5

"".."IME..JRED

~ITH cJRRENTIPUUlEIOF
I

2.~ DURATION. INITIAL TJ -25°C. (HEATING
EFFECT OF 2 0,. PULSE IS MINIMAL)

4~

a;-

....

VG8=10V

I
ti
i

3

G

2

_v

1

o

10

20

z

VQ8=20V

I
I

30

;-..
12

..... r--....

~ t......... r---. b-..

-.....

8

r--.... I"--.-......
IRF132,3

..l\!s

I)

I

16

Il!

~F130,1

I"' ~

~

~

~

40

50

I•• DRAIN CURRENT (AMPERES)

025

50

75

100

125

150

To. CASE TEMPERATURE ("C)

Typical On-Reslstance Vs. Drain Current

, . Maximum Drain Current Vs. Cese Temperatura

.80

~
70

'"' ,)\.
"I\.

'\
0

'\

."

0

0

0

0

2q

40

60

80

100

\.

120

i\.

140

160'

Te. CASE TEMPERATURE ("C)

Power Vs. Temperalure Derallng Curve

c8

SAMSUNG SEMICONDUCTOR

77

N;'CHANNEL

,IRF140114111421143

POWER MOSFETS

FEATURES
• Low ROS(on)
• Improved inductive ruggedness
• Fast switching times
• Rugge~ polysilicon gate cell structure
• Low, input capacitance .
• Extended safe operating area
• Improved high temperature reliability
• TO-3 package (High current)

TO-3

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF140

100V

0.0850

27A

IRF141

60V

0.0850

27A

~
'D'

IRF142

100V

0.110

24A

IRF143

60V

0.110

,24A

,G

. S

MAXIMUM RATINGS
Symbol

IRF140

IRF141

IRF142

IRF143

Unit

Drain-Source Voltage (1)

Characteristic

Voss

100

60

100

60

Vdc

Drain-Gate Voltage (RGs= 1.0MO) (1)

VOGR

100

60

100

60

Vdc

Gate-Source Voltage

.

±20

VGS

Vdc

Continuous Drain Current Tc';"25°C

10

27

27

24

24

Adc

Continuous Drain Current Tc= 1 00° C

10

17

17

15

15

Adc

10M

108

108

96

96

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed
T9tal Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

IGM

±1.5

Adc

Po

125
1.0

Watts
WloC

TJ, Tstg

-55 to 150

·C

rL

300

·C

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse widtho;O;300",s, Duty Cycleo;O;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

78

N-CHANNEL

IRF140/141/142/143

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min

V

VGs=OV

IRF141
60
IRF143

-

V

10= 250llA

4.0

V

Vos = VGS. lo=2.5OIlA

100

nA

VGS=20V

-100

nA

VGS=-20V

250

IlA

Vos=Max. Rating. VGS=OV

IRF140
27
IRF141

-

-

A

IRF142
24
IRF143

-

-

A

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSs

ALL

-

10(on)

Static Drain-Source On-State
Resistance (2)

ROS(on)

ALL

IRF140
IRF141

-

0.06 0.OB5

0

IRF142
IRF143

-

0.09 0.11

0

g,.

ALL

6.0 10.5

Ci..

ALL

Output Capacitance

Co••

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

ld(on)

ALL

t,

ALL

ld(offl

ALL

t,

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qgo

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

Fall Time

Vos=Max. RatingXO.B. VGS=OV. Tc=125°C

VGs=10V.10=15A

Forward Transconductance (2)

Turn-Off Delay TIme

1000 IlA

Vos>lD(on) X ROS(on) max .• VGS= 1 OV

Input Capacitance

Rise Time

Test Conditions

-

ALL

On-State Drain-Source
Current (2)

Max Units

-

VGS(Ih)

loss

Typ

IRF140
100
IRF142

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

-

1320 1600

0

VOS>IO(onIXROS(on) max .• 10=15A

pF

600

BOO

pF

250

300

pF

39

60

nC

12

-

nC

27

30

ns

60

ns

BO

ns

30

ns

VGS=OV. Vos=25V. f= 1.0MHz

Voo=0.5BVoss. lo=15A. Zo=4.70
(MOSFET switching times are essentially
independent of operating temperature. )

VGS=10V. 10=34A. Vos=O.B Max. Rating
(Gate charge IS essentially independent of
operating temperature. )

nC

THERMAL RESISTANCE
Junction-to-Case

RIhJC:

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.0

KlW

0.1

-

KIW Mounting surface flat. smooth. and greased

-

30

KIW Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300lls. Duty Cycl~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

79

N·CHANNEL

IRF140114111421143

POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

,Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vso

Type Min Typ
IRF140
IRF141

-

IRF142
IRF143
IRF140
IRF141
IRF142
IRF143
IRF140
IRF141

-

IRF142
IRF143

-

Test Conditions

Max Units
27

A

24

A

108

A

96

A

2.5

V

Tc=25°C, Is=27A, VGs=OV

2.3

V

Tc=25°C, Is=24A, VGs=OV

[~]

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

-

Reverse Recovery Time
ALL
500
ns TJ=150°C, IF=27A, dl"/dt=100Nl-ls
trr
Notes: (1). TJ=25°C to 150~C (2) Pulse test: Pulse wldth~300I-ls, Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
0

0

,

50

I

BOIlS Pulse Test

VGS-10V

80j.1S

VGS",,9V

I

pllse Test

VOS>I9\onIXROO(OOI ma_

I

TJ - 1125°v.....,

TJ=~5"~ '::'
TJ =-55"C

0

j

v,,=18v
0

0

I

,

'r

11

I

0

r

Voo-6V

I

0

0

Vos-5V

Vo)4V

o

10
20
30
40
50
VDS, DRAIN-lO-SOURCE VOLTAGE (VOLTS)

60

,50

VGS-"
//

sossl Pulse Tesl

0

~ ./
~V
J. V V

;r

litW

~~

vGS""Jv

"....

vGS.l,
1m,

vGS-ev

10m,
VGS s 5V

VGS-4~

/
1

14

K=9V

,.,AV

0

~:J=125<>C
TJ =2SOC

I--T'=-155OC

2
4
6
8
10
12
VOS, GATE-TO-SOURCE VOLTAGE (VOLTS)

~ ,/

0

2

3

4

VD. DRAIN-TIDlonIXRoslonln\8ll

FTr15D'C
TJ~25°C

J!
",.

1/

10
10

20
30
40
ID. DRAIN CURRENT (AMPERES)

50

i

·~S:1.05
U:IE

11:11:

5~ 095

~­

.,.., .....- V

....- ........

V

.,....

l

12

16

2.0

2.4

V
./

5

./

/'

./'

.

........
0.75

o

40

80

120

TJ. JUNCTION TEMPERATURE ('C)
B~eakdown Voltage Vs. Temperature

SAMSUNG SEMICONDUCTOR

180

o

-40

;I'

V

'··'r- -

VQS-1OV

0.85

40

c8

08

.,.... ...-

~

~

~I

5

115

fi~
",c

04

Typical Source-Drain Diode Forward Voltage

1.25

~

o

Vso. SOURCE·TQ.DRAIN VOLTAGE (VOLTS)

Typical Transconductance Vs. Drain Current

g

W

P

40

80

120

160

TJ. JUNCTION TEMPERATURE ('C)

Normalized On-Resistance Vs. Temperature

81

N-CHANNEL
. POWER MOSFETS

IRF140/141/142/143
3000

5

v",=-, oVJ

.l

I

I

MHz

.2400

\

0

. ~ 1200

\

IO(on)XRos(on) m.... VGS= 1 OV

Forward Transconductance (2)

Rise TIme

Test Conditions

-

2.0

On-State Drain-Source
Current (2)

Max Units

-

ALL

loss

Typ

IRF150
100
IRF152

VGS(th)

Zero Gate Voltage
Drain Cllrrent

(Tc=25·C unless otherwise specified) .

~

-

0.08

-

0
0

Vos>IO(on)XRos(on) max.• lo=20A

2900 3000

pF

1050 1500

pF VGS=OV. Vos=25V. f=1.0MHz

450

500

pF

-

35

ns

100

ns

125

ns

100

ns

120

nC

72

Voo=0.5BVoss. lo=20A. Zo=4.7D
(MOSFET switching times are essentially
independent of operating temperature.)

~
I

VGS=10V. lo-50A. Vos=0.8 Max. Rating
(Gate charge is essentially Independent of
nC
operating temperature. )
nC
J.

18
54

-

THERMAL RESISTANCE
Junction-to-ease

R\t\Jc

ALL

Case-to-Sink

Rthcs

ALl

Junction-to-Ambient

R\t\JA

ALL

-

-

0.83 KlW

0.1

-

K/W Mounting sUrlace flat. smooth. and greased

-

30

KIW Free Air Operation

Note.: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse width.. 300/ols. Duty Cycle.. 2%
(3) Repetitive rating: P~lse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR·

84

N-CHANNEL
IRF150115111521153

POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol Type

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Min

Typ

IRF150
IRF151

-

IRF152
IRF153
IRF150
IRF151
IRF152
IRF153
IRF150
IRF151

Test Conditions

-

40

A

-

-

33

A

-

-

160

Modified MOSFET symbol
showing the integral
A ,reverse P-N junction rectifier

-

132

A

-

2.5

V

Tc=25°C, Is=40A, VGs=OV

-

2.3

V

Tc=25°C, Is=33A, VGs=OV

-

IRF152
IRF153

Max Units

~

-

Reverse Recovery Time
600
ALL
ns TJ=150°C, IF=40A, dlF/dt=100A//ois
trr '
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse Wldth";300/ols, Duty Cycle";2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
60

5

P

V68=10V

50

I

0:,

W

40

...5
zw

30

z

0:

VII
ArJ

vGa""lv- -

()

C

20

:"'III

T}"'25 0
TJ ""2S"C

I

C

S

T'--•• '~

VG8=5V

10

'tGs"Lv 10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

60

1

20

-

1/1). -Z- ~~~-.v
ves-

rtJ

16

,~

,

2

'I

'V

/

so,..s Pulse Test

m

5

e

-ffilt
':~~
r--+++-++1+H-/71S UMITED BY Ros..CI'I1

-:..-: ~f'

IRF150,1

1'02r';i~-:T

'''''''
00,..

~""5V

"

,...

IRf152,3

2~~~~~+-~~~~+--+-r++HtH

,J•. c

~

10me

0j----Tr150" MAX.
"",,-0 83 KIW

r--

II
Vas=4V

I[.; Vo

4

OPERATION IN THIS AREA

VGS~10V

11/
I

3

Typical Transfer Characteristics

7V

-vas- 8V
t--V~""9V

2

Iff
Ai

V.... GATE·TQ.SOURCE, VOLTAGE (VOLTS)

Typical Output Characteristics •

0,4
0,8
1.2
1,6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8

I

VDS>lO'Q/I)XRDSlonl ....

I

:::>

I

1/

80"s Pulse Test

V -7V

:IE

0:
0:

~

vas-'av- I--

ffi

0.'

'1/

aof'S Pulse Test

Vas-gv .

SAMSUNG SEMICONDUCTOR

,OOms

2~+41141~111~-+14~~O+~~~

20

11111

'jF't'i i

~,.b, 2

1,0 1.L.0,....-J..2..J....1..51..L.1.J..iJ:,0-:::20:-'-'":5!:!0~,~00;:--:2;;!:0-;;0"'-':;5'*:00~,000
V.., DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

85

N-CHANNEL
POWER MOSFETS

IRF15011511152115.3
...
ifi
ill

h
!l!=
~.~

1.0
0.5

~;

iIi~ 0.2

~~

:li

0.1

~i

0.05

I'"

~~

j

0';"0.5

0=0.2

oln.l
0- . 5
0=

0-0. 1

0.02
·0.0 1

10'"

10~

5
10-3
2
5
10 1
2
5
10-'
11. SQUARE WAVE PULSE DURATION (SECONDS)

10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

103

20

TJ .-55°C

TJ =25°C-

/~ ....... 1"'"

2

/

v::

TJ-2~

-

,

....., ~
~,",,150OC

~,-'2J·C

~

~V

8

(/

vOS>loccn!xAostanl _
8O,.s Pulse Test

4

l

,JJ

o

1.0
10

20

30

40

o

1

3

4

5

VSD. SOURCE-To-DRAIN VOLTAGE (VOLTS)

Typical Transconductance VL Drain Current

Typical Source-Drain D,lode Forward Voltage

2.5

I

....... .....
~

io""'"

51-" /

,0

/

~! 1.5
~~ 1.0

...... ~
",

/

It
,'l

.
o

40

V

./
./

I-~

5

........

V

....... / '
VGS=10~

0.5

t

c--

lo= 20

o
80

120

TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

c8

T'12s , c'

10. DRAIN CURRENT (AMPERES)

1.25

0.7 5
-40

TJ -150°C

2-

SAMSUNG SEMICONDUCTOR

160

-40

0
.

40

80

120

lSO

T... JUNCTION TEMPERATURE ('C)

Normalized On-Reslstanee VL Temperature

86

N-CHANNEL
POWER MOSFETS

IRF150/151/152/153
5000

5

VGSIIIO
1=1 MHz

l

Clss=Cgs+Cgd, Cds SHORTED

Crss'=Cgd

4000

~SSl:cds+~

0

Cgs+Cgd

==cds+Cgd

i

r

\

ooo

r-...

c".

~~

~

~ 2000

\ \
\

U

<.i
1000

I

.........

..........

i"'- t-..

.......

/

C...

II

10
20
30
40
Vas. DRAIN-TCl-SOURCE VOLTAGE (VOLTS)

o

50

_

40

• ~onl

0.1 4

0.1

I

0

I
/

~

I

fIE

0.06

o

40

$

CU~RENT rULSE pF 2.'f8
DURATION INmAL TJ =25°C

...Z

~='~~U:~E~~N:ALI

I,.

f-'"

112

140

.......

...........

i'..

IRF15~

24

UI

U

Z

-

84

I'

16

""-

I

IAF150,1

,
"'",',
......

'\.\

C

./
0.02

MEASURED WITH

56

A.. TOTAL GATE CHARGE (nC)

........ r--.....

!3
Vas=10V

~

~

..........

32

0<2

~

~

28

Typical Gata Charga Vs. Gat..T~urce Voltage

0.26

I

ID-50A

I

eo..

Typical Capacitance Va. Drain to Source VoHage

I

~::~~~,

V~-.OV.'RFI50.2~

5

!!i

'\ ~

.R

"

,

1\

Vos-20V

80
120
160
10. DRAIN CURRENT (AMPERES)

200

Typical On-Resistance Vs. Drain Currant

o

25

50
75
100
125
TA. AMBIENT TEMPERATURE (OC)

150

Maximum Drain Currant VI. Case Temperature

160
140

f-- "'\.

5

\.

120

I
i!

60

~

0

"

I'\.

20

o

,
'\

80

15
~

'\

100

20

~

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

r\.

140

160

Powar Vs. Tamperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

81'

N-CHANNEL

IRf220/22112221223

POWER MOSFETS

FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
RuggeeJ polysilicon gate cell structure
low input capacitance
.
Extended safe operating area
Improved high temperature reliability
TO-3 package (Standard)

TO-3

PRODUC1: SUMMARY
Part Number

VDS

RDS(~n.

ID

IRF2.20

200V

0.800

5.0A

IRF221

150V

0.800

5.0A

IRF222

200V

1.20

4.0A

IRF223

150V

1.20

4.0A

MAXIMUM RATINGS
Symbol

IRF220

IRF221

IRF222

IRF223

Unit

Drain-Source Voltage (1)

Voss

200

150

200

150

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOOR

200

150

200

150

Vdc

Gate-Source Voltage

VGS

Characteristic

Continuous Drain Current Tc=25°C

±20

Vdc

II)

5.0

5.0

4.0

4.0

Adc

10

3.0

3.0

'2.0

2.0

Adc

Drain Current-Pulsed (3)

10M

20

20

16

16

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

40
0.32

Watts

W/oC

-55 to 150

°C

300

°c

Continuous Drain Current Tc=100°C

Operating and Storage
Junction Temperature Range

TJ, Tstg

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

·TL

,

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width.. 300IlS, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

N-CHANNEL·
POWER MOSFETS

IRF2201221/2221223
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRF221
150
IRF223'

-

V

10=250"A

4.0

V

Vos=VGs. 10=250,.A

100

nA

VGS-20V

-100

nA

VGs=-20V

iRF220
5.0
IRF221

-

-

A

IRF222
4.0
IRF223

-

-

A

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

-'.

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

10(on)

250. "A
1000

Vos>lD(on)XROS(on) max .• VGs=10V

-

0.4

0.8

0

-

0.8

1.2

0

Forward Transconductance (2)

g18

ALL

1.3 2.8

-

0

,Input Capacitance

Claa

ALL

450

600

pF

Output Capacitance

Coaa

ALL

150 300

pF

Reverse Transfer Capacitance

Cras

ALL

Tum-On Delay TIme

Iel(on)

ALL

t,

ALL

-

-

12.5

Tum-Off Delay TIme
Fall Time

lel(oH)

ALL

t,

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ag

ALL·

Gate-Source Charge

aga
agd

ALL

Gate-Drain ("Miller") Charge

ALL

Vos=Max. Rating. VGS=OV

,.A Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

IRF220
IRF221
Static Drain-Source On-State·
ROS(on)
Resistance (2)
IRF222
IRF223

Rise Time

Test Conditions

Max Units

IRF220
200
IRF222

VoS(th)

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise specified)

I

VGs=10V.lo=2.5A

50

4.0
8.5

.

80

pF

40

ns

60

ns

100

ns

60

ns

15

nC

-

nC

Vos>IO(on)XROS(on) max •• 10=2.5A

VGs=OV. Vos=25V. f";1.0MHz

Voo=0.5BVoss. lo=2.5A, Zo=50 I)
(MOSFET switching times are essentially
independent of operating temperature. )

VGs=10V. 10=6.0A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature. )

nC

THERMAL RESISTANCE
Junction-la-Case

RthJC

ALL

Case-to-Slnk

RthcS

ALL

Junction-la-Ambient

RthJA

ALL

-

-

3.12

0.1

-

K/W Mounting surface flat. smooth. and greased

-

30

K/W Free Air Operation

KIW

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widthID(onIXAostco:>l""'"

TJ=12So'C
TJ""25°C
TJ =-55°C

I
Vas-BV

I

,VGS -55V

4

4

TJ -125°

VGS

'TJ = 55OC'JJ

J

2

45V I -

Vii

Vas 4V- t--

o

20

40

60

80

100

120

2

vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

IA
vos-ev),

ao,s Pulse Test

VG8=10V

~/

8

.~

t-VGS~'TV

~,..

l'

b

J

2

I'
o

f/

8

10

12

14

10
OPERATION IN THIS

AREA IS UMITED BY Ros!onI
IRF 220,1

I

Io

1'.

~

"'-r,

~
I

r-iRF 222,3

VGS=6V

5

I

!Zw
z

v",-L--:

C
~

I

R

I I I

2
1

,/

100"s

I

o~~:L..c
=== ~J~1~~~~ =

5 -

~

I

2

2
4
6
8
Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

SAMSUNG SEMICONDUCTOR

10

o. 1

1.0

IIIIII
5

10

~
IAF 221.3-1

20

~

'1
,oms

SINGLE PULSE

VGS -4.5V
VGS-4V

,0

~IRF 220,1
_IRF 22i,3

~
o

VGS=55V

Typical Saturation Characteristics

c8

6

vas=elsv

~

4

4

Typical Transfer Characteristics

I

IhV

6

~V

Vos, GATE-T0-50URCE VOLTAGE (VOLTS)

Typicai Ou.tput Characteristics

0

t"-..

TJ"'25°~

VGS~5V

50

lOoms

~tO'2

100 200

500

Vos, DRAIN-TO-SOURCE VOLTAGE (VonS)

Maximum Safe Operating Area

90

N-CHANNEL
POWER MOSFETS

IRF220/221 1222/223
2
0
0-=05

5

~
0-02

2
1
5

~

~

0-0.1
~

0=00

I-'~

~ ~~

t-O=D 02

~-

~

"'~

~

-

NOTES

IILIL
~.--1

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

....

2

1 Duty Factor, D"'t2 Per Unrt Base""R.r...c=3 12 Deg. C/W
3

1

~

10-

1(,

5

2

5

10-

2

10-,

5

TJt.rTc"'PDMZII\X: It)

I 1111111

I I

I I I II
10

11. SQUARE WAVE PULSE DURATION (SECONDS)'

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

10 3

6.5

2
TJ =":'55°C

V

I'"

,/ V V

V/ ~

....... r0-

-

~ t-"

£V

,

25~C-: t =

TJ=25°C

5
TJ=:,125°C

~

0

10-'

1.00""

. TJ =150°C

I--

Vos>Iqan)XAost""1 __

SIP"T" t--

Ilf

o

T,

t-=

I--~

TJ =1,50°C

TJ=j5 O C

1.0
2

4

6

8

10

o

1

ID, DRAIN CURRENT (AMPERES)

2

3

4

5

VSO, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Vs_ Drain Current

1.25

Typical Source-Drain Diode Forward Voltage

5

w

~

g

1.1 5

Z

~

~51

i~
we

05

U:i

0:0:

g~ 0.95 , , -

... v

L

,,-

L

Vt"'"

k-"" !-

V

V
/'

.....V

~-

~
~

l

V

V
VGS-1DV
ID -2.5A

O.B5

0.75
-40

o

40
80
120
TJ, JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs_ Temperature

c8

........

SAMSUNG SEMICONDUCTOR

o
160

-40

0

40
80
120
TJ, JUNCTION TEMPERATURE (OC)

160

Normalized On-Resistance Vs. Temperature

91

N-CHANNEL
POWER MOSFETS

IRF220/221 1222/223
1'000

5

VGB-O"
f=1 MHz
Clss=-Cgs+CgcI, Cds SHORTED

iill

~

eoss-Cds+Cg8Cgd
Cgs+Cgd
OCds+Cgd

\
\
\ "\,

600

()

~ 400

~

I

Crss-Cgd

\

800

5

VDS~100V

c"

Vos""'160V

\

'\..

.......

\
10

20

30

40

50

o

..

V
4

8

12

r- ~lse

""""- .......

OF \ 2 ¥

buR.AroN

4

=~NT~-E~ OF 2 h~

.......

IS MINIMAL),

f'..............

.......

. . . r-.....

,

1. 5

3
Vos""10V

,
i'I'-.....

........

IRF 222,3 " '

0

/

../. / V

5

o

5

/ . r-

2

V09 -20V:""

1

10
15
20
10. DRAIN CURRENT (AMPERES)

25

Typical On.flesiatance. Va. Drain Current

35

20

ag• TOTAL GATE CHARGE (nC)

Typical Gate Charge Vs. Gate-To-Source Voltage

~PULSE

40

16

Vos. DRAIN-TMOURCE VOLTAGE (VOLTS)

~ ME,1,RED WITH CURRENT

i

iD =6A

Typical Capacitance Va. 'Draln to Source Voltage

2.5

2.0

~V

/

Coso

Cm

o

""-

~7

ti
200

!..&V

Vos=40V

IRF 220,1

"-

" '"
\.

o
25

50
75
100
125
TA. AMBIENT TEMPERATURE ("C)

,,

~

150

Maximum Drain Currant Vs. Case Temperature

"

"",,

5

'\

5

"-

0
5

20

""

40
60
60
100
120
TA. AMBIENT TEMPERATURE ("C)

140

160

Power Vs. Temperature Derating Curve

.=8

SAMSUNG SEM.ICONDUCTOR

92

N-CHANNEL.
POWER MOSFETS

IRF230123112321233 .
FEATURES .
•
•
•
•
•
•
•
•

Low ROS{on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
.
Extended safe operating area
Improved high temperature reliability
TO-3 package (Standard)'

TO-3

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRF230

200V

0040·

9.0A

IRF231

150V

0.40

9.0A

IRF232

200V

0.60

8.0A

IRF233

150V

0.60

8.0A

II

MAXIMUM RATINGS
Symbol

IRF230

IRF231

IRF232

IRF233

U"it

Drain-Source Voltage (1)

Characteristic

Voss

200

150

200

150

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOGR

200

150

200

150.

Vdc

Gate-Source Voltage .

VGS

Continuous Drain Current Tc=25°C
Continuous Drain Current Tc = 1 00 ° C

±20

Vdc

10

9.0

9.0

8.0

8.0

Adc

10

6.0

6.0

5.0

5.0

Adc

Drain Current-Pulsed (3)

10M

36

36

32

32

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

75
0.6

Watts
W/oC

TJ. Tstg

-55 to 150

·C

TL

300

·C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case f~r 5 seconds

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse width.. 300,..s. Duty Cycle.;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

93

. N-CffA'NNEL

IRF230123112321233

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Char!lcterlstlc

. Symbol

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRF231
150
IRF233

-

-

V

10= 250JAA

4.0

V

Vos=VGs. 10=25O/AA

ALL

2.0

Gate-Source Leakage Forward

IGSs

ALL

Gate-Source Leakage Reverse

IGSs

ALL

Zero Gate Voltage
Drain Current

loss'

. ALL.

-

On-State Drain-Source
Current (2)

10(on)

Forward Transconductance (2)

ROS(on)

250-

.,.fA

Vos=Max. Rating. VGs=OV

1000

JAA

Vos=Max. RatingXO.B. VGs"OV. Tc=125°C

A

IRF232
IRF233

B.O

-

-

A

IRF230
IRF231

-

0.25

0.4

0

IRF232
IRF233

-

0.4

0.6

0

Clss

ALL

Output CapaCitance

Coss

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

!dlon)

ALL

tr

ALL

Ictloff)

ALL

tf

ALL

Qg

ALL

Gate-Source Charge

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

VGS=20V
VGs=-20V

-

ALL

Fall Time

nA
nA

-

gls

Turn-Off Delay Time

100
-100

IRF230
9.0
IRF231

Input Capacitance

Rise'Time

Test Conditions

Max Units

IRF230
200
IRF232

VGS(th)

Static Drain-Source On-State
Resistance (2)

(Tc=25°C unless otherwise specified)

VOS>IO(on)XRoS(on) max .• VGS= 1OV

VGs=10V.10=5.0A

-

0

720

BOO

pF

250

450

pF

3.0 4.6

-

60

-

Vos>IO(on)XROS(on) max .• 10=5.0A

VGs=OV. Vos=25V. f=1.0MHz·

150· pF
30

ns

50

ns

.50

ns

40

nil

19

30

nC

5.0

-

nC

14

K/W

Voo=0.5BVoss. 10=5.0A. Zo= 190
(MOSFET switching times are essentially
independent of operating temperature.)

VGS=10V. 10=12A. Vos=O.B Max. Ratlng
(Gate charge is essentially independent of .
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

Rthcs

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.67

0.1

-

K/W Mounting surface flat. smooth. and greased

-

30

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300/As. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

.c8SAMSUNG SEMICONDUCTOR

94

N-CHANNEL
POWER MOSFETS

IRF230123112321233

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Type Min Typ
IRF230
IRF231

Max Units

Test Conditions

-

-

9.0

A

IRF232
IRF233

-

-

8.0

A

IRF230
IRF231

-

-

36

A

IRF232
IRF233

-

-

32

A

IRF230
IRF231

-

2.0

V

Tc=25°C. Is=9.0A. VGs=OV

IRF232
IRF233

-

1.8

V

Tc=25°C. Is=8.0A. VGs=OV

-

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

[~]

ALL
- 450 ns TJ=150°C. IF=9.0A. dIF/dt=100A/,..s
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth .. 300,..s. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
Reverse Recovery Time

24

10

..

1::;~ ~IOV

801d' Pulse Test

vas=gV

TJ'25 C r=

v.. Jav

20

0

J

I

8

8~,as

in

Pulse (est

TJ =25°C_

H

TJ =55°C-

fi
'I

VOS>IO!on)XADS(OOI m..

11/

~

li
~

...Z

Vcs=7V

2

vGS1sv
a

~

TJ -125°C

0

T~=-55°C

I

TJ=25°C

a:

.e

1

8

4

5

6

11/

6

........ VGS -9V

II!
a:

,.

~ '/
J~

u

~
!i
oS

,
"

I,

........ VGS=7V

IAFlJ,
vGS-ev

IRF 232,3

V

" ;.. ,,,,..

..

,I
f=
v,,~Jv

1
2
3
4
Vos. DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

SAMSUNG SEMICONDUCTOR

Tc .. 25°C
TJ''''150°C MAX
RIII..C-167 tC
!

8
J=-5 °0

~

8

/~ ~ ~

i"'"

~

TJ .. ,25°C

r%V

II.

r

o

~
~

V

so,.._T...' -

IIV

Vos>lD\onIXAostonJ_

!

2
1.0

5

j

a
12
18
ID. DRAIN CURRENT (AMPERESI

20

1=
t--

o. 1
4

TJ~t500'C

I(

~

V ~ H::l:- f- ~

4

2

~

~

~,TJ""50°C

TJS;2r C

I

0 1 3

6

VBD. SOURCE·To-DRAIN VOLTAGE (VOLTSI

Typical Transcounductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

1.25

2.5

5

...... j...J.....-"

5

.."..
5

V

V

"""'"

,/

. /V

, /V

V

/.

".
Vas=10V
la- 5A

.."..,
5

0.7 5
-40

v

,
40
80
120
TJ. JUNCTION TEMPERATURE ('C)

160

Breakdown Voltage Vs. Tamperature

c8SAMSUNG SEMICONDUCTOR

96

N-CHANNEL
POWER MOSFETS

IRF230123112321233
2000

25

V~-O

CISS~dg~:~gd, c~ SHooko

/ii.

:;

Ctss=Cgd

1600

0
~
w

....

Coss=Cds+ CgsCgd

cgs+Cgd
=cds+Cgd

~

roo
::

800

~

1

0

>

\

400

\

15

~::~~

W

()

a:

\

\

20

~
.$

'OISS

10

AW-

~

\
Coss

"

10

20

30

l!
5'

>

C'OS

40

50

V

Vos=160V, IRF230,2

:::>

lo=12A

/

V
o

16

24

32

40

Vos, DRAIN·TO-SOURCE VOLTAGE (VOLTS)

a., TOTAL ClATE CHARGE (nC)

Typical Capacitance Vs. Drain to Source Voltage

Typical Gate Charge Vs. Gat.TC>50urce Voltage

10

10

iii
:IE

'"~w

..........

L

()

,1

Z

c

RDS.oo>I MEASURED WITH CURREN;

Iii

PULSE OF 2 ~8 D~ATIO~

iii
w
a:

INITIAL TJ=2SoC
tHEAT~NG ,EFFECT OF 2 OI'S PULSE

0.6

..........

J.,0V

0.8

-

I

z

I

r-....
r-....

.........

.........

IS MINIMAL)

0
w

()

a:

:::>

g

04

-'

6

~

.:c
a:

/

0.2

J

..........
..........

"

......

.......

...........

~230'1

IRF23~~

-

~

"~

~
Vos=20V-

~

\

~

~

a:

8

16

24

40 '

32

1o, DRAIN CURRENT (AMPERES)

0 25

50

75

100

125

,
150

Te, CASE 'TEMPERATURE ("C)

Typical On-Resistance Va. Drain Current

Maximum Drain Current Vs. Case Temperature

80

f-70

~

~

i\.

60

\

C

!

z

50

~

~

a:

w

'\

30

i'" Ii\.

~
0

...
i

20

10

0

~

.'\

0

20

40

60
80
100
120
T" CASE TEMPERATURE ("C)

r\.

140

160

Power Vs. Temperature Derating Curve .

=8SAMSUNG SEMICONDUCTOR

97

N-CHANNEL
POWER MOSFETS

IRF240/241 1242/243
FEATURES
•
•
•
•
•
•
•
•

Low ROS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure.
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (Standard)

. TO-3

PRODUCT SUMMARY
ParfNumber

VDS

RDS(on}

ID .

IRF240

200V

0.180

18A

IRF241

150V·

0.180

18A

IRF242

200V

0.220

16A

IRF243

150V

0.220

16A

MAXIMUM RATINGS.
Characteristic

Symbol

IRF240

IRF241

IRF242

IRF243

Unit

. Drain-Source Voltage (1)

Voss

200

150

200

150

Vdc

Drain-Gate Voltage (RGs= 1.0MO) (1)

VOOR

200

150

200

150

Vdc

Gate-Source Voltage

VGS

16

16

Adc

Continuous Drain Current Tc=25°C

10

Continuous Dr;iin Current Tc = 100 ~ C

±20
18

18

Vdc

10

11

11

10

10

Adc

Drain Current-Pulsed (3)

10M

72

72

64

64

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=2!5°C
Derate above 25°C

Po

125
1.0

w/oe

TJ. Tstg

-55 to 150

°C

fL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case 10r 5 seconds

Watts

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widlh';;;300,..s, Duty Cycle.;;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUcrOR

98

N-CHANNEL
POWER MOSFETS

IRF240124112421243
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRF241
150
IRF243

-

V

10=250,..A

IRF240
18
IRF241

-

-

A

IRF242
16
IRF243

-

-

A

VGSI"')

ALL

2.0

IGss

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

On-State Drain-Source
Current (2)

loss

ALL

nA

VGs=-20V

250

,..A

Vos = Max: Rating. VGS=OV

1000 ,..A

-

0

VGs=10V.lo=10A

'nput Capacitance

C.

ALL

C....

ALL

-

Reverse Transfer Capacitance

C"",

ALL

Turn-On Delay Time

Id(on)

ALL

t,

ALL

Id(otf)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

ag

ALL

Gate-Source Charge

aga
agel.

ALL
ALL

Vos=Max. RatingXO.8. VGS=OV. Tc=125°C

Vos>IOlon)XRoslon) max.• VGs=10V

0.20 0.22

Output Capacitance

Gate-Drain ("MOler") Charge

-100

0

6.0

Fall Time

Vos=VGS. 10=250,..A
VGs=20V

0.13 0.18

ALL

Turn-Off Delay Time

V
nA

-

9ts

Rise TIme

4.0
100

'O(on)

IRF240
IRF241
Static Drain-Source On-State
ROSlon)
ReSistance (2)
IRF~42
IRF243
Forward Transconductance (2)

Test Conditions

Max Units

IRF240
200
IRF242

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

-

9.5

-

(}

1200 1600

pF

360'

750

pF

130

300

pF

-

30

n$

60

ns

-

80

ns

-

60

ns

44

60

nC

-

nC

35

K/W

9

Vos>IOlon)XROSlon) max .• 10=1 OA

VGs=OV. Vos=25V. f= 1.0MHz

Voo=0.5BVoss. 10= 1OA. Zo=4.7 0
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. 10=22A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Case

RIhJC

ALL

Case-to-Sink

RIhCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.0

0.1

-

KIW

-

30

K/W Free Air Operation

Mounting surface flat. smooth. and greased

Notes: (1) TJ=25°C to 150'C
.
(2) Pulse test: Pulse wtdth<300,..s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

II

J

N-CHANNEL
POWER
MOSFETS
. .
"

IRF240J241 1242/243

.

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse,Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Reverse Recovery Time'

Type

Min Typ

Max Un~ts

Test Conditions

IRF240
IRF241

-

-

18

A

IRF242
IRF243

-

-

16

A

IRF240
IRF241

-

-

72

A

IRF242
IRF243

-

-

64

A

IRF240
IRF241

-

-

2.0

V

Tc=-25°C. Is=18A. VGs=OV

IRF242
IRF243

-

-

1.9

V

Tc=25°C:ls=16A. VGs=OV

-

ns

.
Modified MOSFET symbol
showin!l the integral
reverse P-N junction rectifier

~

''''~

TJ=150°C.IF=18A. dIF/dt=100A/,..s
t"
'Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse widthl(ljcnIXR~onl ....

2

ia0:

Ves BV

rl/

,

-

'

~

W

Q.

I

:IE

~

...z

~Jv- -

4

"z

I

6

.9

I

-

I

0:

I

C

8

TJ=25°C
T~ __ 55°C

l-

C

Vas=6V

~~~-'25'C

I

W

0:
0:

:::>

6

4

~

8

~ t--TJ=....:isoc

V(!S1I:5V

r-TJ='2~oC

TJ=25°C

A~

VGS-4V

o

1

0

20

40

.60

50

o

2

VD.; DRAIN-TO-SOURCE VOLTAGE (VOLTS)

10'

'40

~I,P'
./ ~ ~

8

/'.-

~

~ /"

,.-

~
VM-~V

J

10

V""~r

Ir=

Vo.s=~

Typical Saturation Characteristics

SAMSUNG SEMICONDUCTOR

,r

"

_\~F 242,3

14

12

I

,o,.sL
1i~

'm.

OPERATION IN THIS

!....-. AREA IS UMtTED

-BYAostonI

~TII

2-

o=J,l.l
== T"-'50'C
5

v",,·'"

1
2
3
4
VD •• DRAIN-T0-50URCE VOLTAGE (VOLTS)

c8

~:RFI240.'

VGS~9V .."

~

.#V

IRF 242\3

~.

I

8

IAF 240,1

I

32

6

Typical Transfer· Characteristics

Typical Output Characteristics

.leI" Pol.. Tosti

4

Vas. GATE-T0-50URCE VOLTAGE (VOLTS)

10ms

l ,U

== ~I~~ ~u~'

DC

1

1

2

o. 1
1.0

MAX

2

IIII
5

.'iim,·3.
10

20

50

'RI'I41'i

100 200

500

VD•• DRAIN-T0-50URCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

N-CHANNEL·
POWER MOSFETS

IRF240/241 1242/243

!Z
VIZ!!!

1.0

~i
~~

fd~

~~

O.

~S

2

NOTES

~

-

o. 1

:Ii ..

"c
~I

I::; !;ill

0_

-0_

i

~

rn_

0.5

w:::;)

0-

0.05

r··

~.-J

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

outy Factor. o .....!!..

1.

t,

2 Per Urnt Base-Rtuc"'1.0 Deg. C/W.
3. TJt,1Tc .PDMZavc (tl·

2

0.0 1
10-'

10-'

-,

5

10

2

5

-.

10

2

5

I IIIIIII

-.

I I I I III

10

10

11. SQUARE WAVE PULSE DURATION (SECONDS}

Maximum Effective Transient Th,rmal Impedance Junction-tcH:ase Vs. Pulse Duration

20

10
5

6

i

II

2

I.- ~

2

I

V
/ V

8

L/ V

...... ....

-

T~=25.J-

TJ=25°C

TJ -150·C

5

-.l

~

2

A
T~~t
V"",I·"r""~'~·
Ba"s Pulse

rt

- r---

I-- l---TJ"1~O·C

17fh25Oc

rli

1.0
8

0

f=

II

TJ =12SoC

r-- r--

V,/'

4

TJ =-55°C

4
1
3
10. DRAIN CURRENT (AMPERES}

0.4

40
•

Typical Transconductance Vs. Drain Currant

I

0.8

1.2

1.6

20

24

Vso. SOURCE-To-DRAIN VOLTAGE (VOLTS}

Typical Source-Drain Diode Forward Voltage

1.25

2. 5

w

~
g

1.1 5

Z

~

,/"

lfs 1.05

'i~
.
wC
U:Ii

"~
~~

0.95 /

V

,........

0

.".. ~

0.85

l

0.7

./

40

o

40

80

120

TJ. JUNCTION TEMPERATURE ('C}

Breakdown Voltage Vs. Tamperature

ciS

./

0

5

"-

J/

V

~

~

L

6

...... .........

V

SAMSUNG SEMICONDUCTOR

160

/.

/"

VGS I!JJt.10

/'

0
-40

lo""'0A

0

40

80

120

160

TJ. JUNCTION TEMPERATURE ('C}

Normalized On-Resistance Vs. Temperature

101

N-CHANNEL
POWER MOSFETS

IRF240124112421243
200

5

0"

160o

\

I

vJ

L

\

Cgs+Cgd
llIICds+Cgd

"- r- I--

1\
\
400

..

J J

f=1 MHz
CI8S=CgS+Cgd, Cds SHORTED

Crss=Cgd
Coss=Cds+ CgsCgd

\

Vos=40V

<>os

0
IRffi~~ I\.

51--I--V~=106v
Vos""160V,

//.

"" ........

o

10

20

em

30

~

I
II

Coos

.........

~

40

b=22A._ I--

] I

m

50

~

00

00

100

D •• TOTAL GATE CHARGE (nC)

VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Capacitance Vs. Drain to Source Voltage
0.5

Typical Gate Charge Va. Gate-To-Source Voltage

20

16
Vas=1OV

"-

~

r--..,..
~

-.,.",

~

.... r"-

12

........

.......

""'-

~240.1

IRF242A

........ ,..-2j

2

8

.'- ~

-~
Rosson) MEASURED WITH CURRENT

V
=-1'"'"

~

"~

PULSE OF 2.0j.lS DURATION
INmAL TJ -2s'''C

1

\

~~~ ~~~c;l)I.2 OJ.lS

o

20

40

60

100

80

10. DRAIN CURRENT (AtIIPERES)

0

25

50

75

100,

125

,
150

TA. AMBIENT TEMPERATURE ('C)

Typical On-Reslstance Vs. Drain Current

Maximum Drain Current Vs. Case Tel1lparature

160
140

~

""

"~

"
'I'\.
"I'\.

'- I'\.

20

o

20

40

60

80

100

120

"K
140

160

TA. AIoIBIENT TEMPERATURE ('C)

Power Va. Temperature Derating Curve

c8SAMSUNG SEMICONDUCTOR

102

N-CHANNEL
POWER MOSFETS

IRF250125112521253
FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High current)

TO-3

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRF250

200V

0.0850

30A

IRF251

150V

0.0850

30A

IRF252

200V

0.120

25A

IRF253

150V

0.120

25A

MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (RGS= 1.0MO) (1)
Gate-Source Voltage

Symbol

IRF250

IRF251

IRF252

IRF253

Unit

VDSS

200

150

200

150

Vdc

,VOOR

200

150

,200

150

Vdc

±20

VGS

Vdc

Continuous Drain Current TC=25°C

10

30

30

25

25

Adc

Continuous Drain Current Tc= 1 00 ° C

10

19

19

16

16

Adc

10M

120

120

100

100

Drain Current-Pulsed (3)
Gate Current-Pulsed
Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

Adc

IGM

±1.5

Adc

Po

150
1.2

Watts
W/oC

TJ. Tstg

-55 to 150

·C

TL

300

·C

Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widthIQ(on)XROS(on) .;...., NGs= 1 OV

-

0.07 0.085

0

-

0.09 0.120

0

VGs=10V"lo7'16A

8.0 12.5

-

-

0

Vos:>lo(on)XROS(on) max., lo=16A

2640 3000

pF

800 1200

pF

300

500

pF

..,...

35

ns

-

100
125

ns IVoo=0.5BVoss, lo=16A, Zo=4.7-0
(MOSFET switching times are essentially
ns independent of operating temperature.)

100

ns

68

120

nG

18

-

50

nC

VGs=OV, Vos=25V, f=1.0MHz

VGs=10V, 10=38A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperatur~. )

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthcS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

0.83

0.1

-

K/W Mounting surface flat, smooth, and greased

-

30

KIW Free Air Operation

K/W

\

Notes: (1-) TJ=25°C to 150°C
.
(2) Pulse test: Pulse width<300/AS, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

,

c8SAMSUNG SEMICONDUcroR

'104

N-CHANNEL
POWER MOSFETS

IRF250125112521253

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Type

Characteristic
Continuous Source Current
(Body Diode)

Is

Min Typ

IRF250
IRF251

:m - -

Max Units
30

A

25

A

Test Conditions

Mo"'' '

MOSFET "mhol

·1

~O

I

1 - - - - - - - - - - - + - - - + - - - + - - + - - - - + - - + - - - - 1 showing the integral'
a
IRF250 _
_
120
A reverse P-N junction rectifier
s
IRF251
Pulse Source Current
ISM
(Body Diode) (3)
IRF252
100
A
IRF253
1------------+---+---+--+----+--+----1-----------------IRF250
V Tc=25°C, Is=30A, Vas=OV
2.0
IRF251
Diode Forward Voltage (2)
VSD
IRF252
1.8
V TC=25°C, Is=25A, Vas=OV
IRF253
Reverse Recovery Time
ALL
750
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width';;300,..s, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
60

5

VGS -;9V
f!-t.Gl.
v.-ev

~

;

80j.iS Pulse Test

ao,..s.Jse Test
VIllV'Io.on!XRDSl.onl ....

,,§

TJ =-55°C

50

20

V...17V

![

![
iii

..
..

0:

~
S

.
Z

'"0:0:
"z"
:c0:

40

IE

S

30

r

20

""

10

~.

VGS-~~

TJ=125°C''\-.

0:

+~::~~~c'

Q

.9
10

/

10
20
30
40
50
VDS, DRAIN-TD-SOUIiCE VOLTAGE (VOLTS)

60

20

J... .....!.T..'

16

![
iii

.

12

!'"
~

!Z
0:

co

V08 ",,10V

B
z
:c

8

R

4

!

o

,

o

1

2

3

!J

'iJJ
'1/

~4

5

6

Vos, GATE-TD-SOURCE VOLTAGE (VOLTS)

Typl.:al Transfer Characteristics

Typical Output Characteristics

S

e-- V

0:

.9

II

f-- fJj

IJ

5

~

VCI8=6V

Q

..

L2S

DC
TJ
TJ ""25°C-

~

rv"'rv-

,....

~

Vea""7V

vas-sl .

V

~V
,..
J

If'

Vas -4V

0.4
0.8
12
1.6
VDS, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

2.0

Typical Saturation Characteristics

c8

SAMSUNG SEMICONDUCTOR

105

N-CHANNEL
POWER MOSFETS

I'RF250/251 1252/253
.

I'"~

!Z
!!!
!II

U
~:o

",Ili

1,0
0';"0.5

0,5

UQ.

~;;;

0-0.2

... U
wz
.,<

0, 2

a

o. 1

~ffi

'1

H

J

0=0.1
0=0.0

0=0.02

5

0=0.01

00
.
0.0 2

0.0 1
10-'

10--

5

10 3

2

5

10-1

2

5

10- 1

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

103

20

'i

~~

TJ=-!SOC

I

~
V

LV

..... ~r-

5

)t"

,

VV

2

V

,

JJ-25°C

TJ""JsoC

5
, TJ -150°C

V

J'/

IV

VOS>IDI,,"IX~I""
8~PuIseTeat

IL

TJ =150°tj

o

10

20

.

j.--T'i25'~

0

30

40

50

ID. DRAIN CURRENT (AMPERES)

Typical Transconductance' Va. Drain Current

1.25

O~>:

2.5
w

z

.~

V

.
~~'.05
"'::;

is
6*~

I

0.95 " ,

L

V

~

...

I"""

~

2.0

!!!

fa
II:

~6
~~

.... /

!!ii

~~
... ~
Z
C

-F

0.85

~
II:
o

40

80

120

TJ, JUNCTION TEMPERATURE'('C)

Breakdown Voltage Vs. Temperature

SAMSUNG SEMICONDUCTOR

160

... V

1.0

.,
0.75

V

1.5

II:

40

c8

~
<

1.1 5

V

./

v

V

......... V
vGS=tOV

~=T~ I--

0.5

o
-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE ('C)

Normalized On·Re~istanca Vs. Tempera.ture

106

N-CHANNEL
POWER MOSFETS

IRF250125112521253
4000

\

1\
l'
1\
\\
\~
\ \

3200

~

LU 2400

;
(J.

~

1600

(;

iii

Coo

...~

20

"~
0

15

...>

VGS=O
'=1 MHz
CISS=Cgs+Cgd, Cds SHORTED

~

II
J.W

10

:i;

elGds+Cgd

l-

e

"r-.
......

"

">....;

Cos.

r-..

/

V

28

50

30

§
VGS""10V

~

"

pulse OF"2 OIlS
pURAT~ON IN~AL TJ :!:25°C
CURRENT

(HEATING ~ EFFECT

018

OF 2 oVa PULSE IS

~

r---

~

C

""'":::>
Z

...........

"

......... 1"'-

,

......... .......

18

IRF252,3

........ ~

12

~

!!i

I

0.10

V

~
006. 0

30

60

"...... V

~

---

=:~:+Cgsb~ r--- CgS+Cgd

~

800

!:i

o
25

50

75

100

125

,,

~

150

TA. AMBIENT TEMPERATURE IOC)

Typical On-Reslstance Vs. Drain Current

Maximum Drain Current Vs. Case Temperature

160

~
140

t\.
"\

iii 120

i

I

'\ r\..

100

I

'\

0

"\

0
0

"

'\.

0

o

I'\.

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE IOC)

r\.

140

160

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

107

. N-CHANNEL

IRF320/3211322/323.

POWER MOSFETS'

FEATURES
•
•
•
•
•
•
•
•

Low RDS(on) .
Improved inductive ruggedness
Fast switching times
Rugged polysillcon gate cell str.ucture
Low . Input capacitance
.
Extended safe operating area
Improved high temperature reliability
TO-3 package (Standard)

TO-3

.

\

PRODUCT SUMMARY

,

pirt Number

Vos

ROSlon)

10

IRF320.

400V

1.80

3.0A

IRF321

350V

1.80

3.0A

IRF322

400V

2.50

2.5A

IRF323

35.0V

2.50

2.5A

.

,

MAXIMUM RATINGS
IRF320 .

IRF321

IRF322

IRF323

Unit

VDSS

400

350

400

350

Vdc

Drain·Gate Voltage (RGs=' .OMO) (1)

VOGR

400

'350

400

350

Vdc

Gate-Source Voltage

VGS

Characteristic

Symbol

Drain-Source Voltage (1)

Vdc

±20.

Continuous Drain Current Tc=25·C

10

3.0

3.0

2.5

2.5

'Adc

Continuous Drain Current Tc=100·C

10

2.0

2.0

1.5

1.5

Adc

Drain Current-Pulsed (3)

10M

12

12

10

10

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25·C
Derate above 25·C

Po

40
0.32

Watts

Operating and Storage
'Junction Temperature Range

TJ, Tstg

-55 to 150

TL

300

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

W/·C
·C .
·C

Not••: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse width"300,.,s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

CiS SAMSUNG SEMICONDUCTOR

108

.

N-CHANNEL
IRF320/321/322/3~3

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

BVoss

Type

Min Typ Max Units

-

-

V

VGs=OV

IRF321
350
IRF323

-

V

10=250",A

4.0

V

Vos=VGs. 10=250,..A

100

nA

VGS=20V

-100

nA

VGs=-20V

250

,..A

Vos=Max. Rating. VGs=OV

1000

,..A

Vos=Max. RatingxO.8. VGS=OV. Tc=125°C

IRF320
3.0
IRF321

-

-

A

IRF322
2.5
IRF323

-

-

A

IRF320
IRF321

-

1.4

1.8

0

IRF322
IRF323

-

1.7 . 2.5

0

VGSlth)

ALL

2.0

IGSs

ALL.

Gate-Source Leakage Reverse

IGSS

ALL

-

loss

On-State Drain-Source
Current t2)

Static Drain-Source On-State
Resistance (2)

1010n)

ROS(on)

ALL

Vos>lD(on)XRDS{on) max .• VGs= 1OV

VGs=10V.lo=1.5A

Forward Transconductance (2)

gfs

ALL

1.0 2.2

Input CapaCitance

Ciss

ALL

-

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

C~

ALL

Turn-On Delay Time

id(on)

ALL

t,

ALL

Rise Time
Turn-Off Delay Time

td(off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Pius Gate-Drain)

Og

ALL

Gate-Source Charge

Ogo

ALL

Gate-Drain ("Miller") Charge

Ogd

ALL

Fall Time

Test Conditions

IRF320
400
IRF322

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

-

460 600

0

90

200

pF

30

40

pF

-

40

ns

-

50

ns

-

100

ns

50

ns

12.5

15

nC

2.8

-

nC

9.7

Vos>IO(on)XROS(on) max .• 16=,1.5A

pF
VGS=OV. Vos=25V. f=1.0MHz

Voo=0.5BVoss. 10=1.5A. Zo=50 0
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. 10=4.0A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

' nC

THERMAL RESISTANCE
Junctlon-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-tO'-Ambient

RthJA

ALL

- ,- 3.12
- 0.1 - - 30

K/W
K/W Mounting surface flat, smooth. and greased

K/W Free Air Operation

Notea: (1) TJ=25°C to 150°C
'(2) Pulse test: Pulse width<300,..s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. JunctiOn temperature

c8

SAMSUNG

SE~ICONDUcrOR

109

N-CHANNEL
POWER MOSFETS

IRF320132113221323

SOURCE-DRAIN DIODE RATINGS AND. CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

------

Pulse Source Current
(Body Diode) (3)

ISM

----

Diode Forward Voltage (2)

VSD

Reverse Recovery Time

Type

Min Typ

IRF320
IRF321

-

IRF322
IRF323

Max Units

Test Conditions

-

3.0

A

-

-

2.5

A

IRF320
IRF321

-

-

12

A

IRF322
IRF323

-

-

10

A

IRF320
IRF321

-

-

1.6

V

Tc=25°C, Is=3.0A, VGs=OV

IRF322
IRF323

-

-

1.5

V

Tc=25°C; Is=2.5A, VGs=OV

ALL

-

450

-

ns

TJ=150°C, IF=3.0A, dlF/dt=100All"s

trr

~J

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

--

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth"300I"s,.Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junctiofl temperature
t;~GS 10V
~IVGS=6V

I

r - r- 80",5 Ipulse Testl

80lls Pulse Test

I

Voo>IDion)XROSIOOJ",",

VG.S=55V

iJ)
w

a:
w
"-

I

@

I

a:

I

~

:0
~

....
z

VGS -5V_

w
a:
a:

~
!Zw

-==

a:

II:

:::>

:::>

.
()

.

()

Z

I
'VGs ""45V

a:

z

-

2

~~=~~~~C,,,,,

a:

c

TJ=-55°C~

c

~

~

i

1

1

~

PI/)
I(jJ

VGS=4V

.,d,1I
o

50

100

150

200

250

300

1
2
3
4
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

VDS, DRAIN-Ta-SOURCE VOLTAGE (VOLTS)

Typical Transfer Characteristics

Typical Output Characteristics

80~ Puis! Test
4

)
I

1

II

j
~

,

h /vO"~7V

Voo -10

VGs=~

~
IRF 320,1

==0

10 =IRF 322,3_Vas 5 V -

VGs=4 SV

J

L
r

VG,S=4V

4
8
12
16
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

TVDical Saturation Characteristics

c8

5V

SAMSUNG SEMICONDUCTOR

20

1.0

5
to
20
50
100 200
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

110

N-CHANNEL
POWER MOSFETS

IRF320/321 1322/323
2
0
0=05

5

""" ,.,ai

0=0.2

2
0-0.1

1

0=0.05

•

JJLJL.
NOTES

~,~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCEJ

0=0.02

5

~

I""'"
-I-' I""'"

1-0 - 0 .01
t-"

1 Duty

2

Fa~r, D=.i
t,

2 Per Umt Base=AIhJC=3 12

De!J.

elW,

3. TJu-Tc=Pa..ZM (t)

..

0.0 1
10

10

..

.,

.,

5

10
2
5
10
5
10
II. SQUARE WAVE PULSE DURATION (SECONDS)
Transient Thermal Impedance Junction- t~ase

~

Maximum Effective

I I I I 1111

I I

1

2

I I I II
10

Va. Pulse Duration

10

~~::~~tL

V

3

L

/'~

/

// lL

V

~

TJ.J1250C~

-

i-"'"

It V
'IIIL
r

~

J55'~ ~
-+T~ r- r-

r- io-- r-

-

i.."..-' ~ ~150OC

0
5

z

~

'2

~w

1.0

TJ -150°C
TJ"'J5OC

0.1
3

o

4

1

2

3

4

5

I•• DRAIN CURRENT (AMPERES)

Y••• SOURCE·TOORAIN YOLTAGE (YOLTS)

Typical Transconductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

2. 5

5

V ....
5

5/

...... ~

V

0

f-'"

V
/V

...V

/'
./
~

5

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

SAMSUNG SEMICONDUCTOR

160

V

...... ~
VGS -1QV

b~'J- r-

,

Breakdown Voltage Vs. Temperature

c8

()

TJ=25°C

~

1 25

-40

l.iZ
I

j

2

0.75

5

w

o
-40

0

40
80 .
120
TJ. JUNCTION TEMPERATURE (OC)

180

Normalized On-Reslstance Vs. Temperature

111

N-CHANNEL
POWER MOSFETS

IRF32013211322/323
1000

25

I--rv~Jo

C;;::'i;.+Cgd'1 Cds "r0ATED
.800

C088=Cds+ CgsCgd
Cgs+Cgd

\

\

Ii::
&
w

()

~s+Cgd.

600

'I

,.....

cf

"

vD8-sov
Vos=200V
Vos=32OV

"

20

30

40

50

e

./. ~
1/

/

1o-4A

~

C>ss

10

~

~~

10

COOS

o

4

8

12

16

20

V... bRAIN-TO-SOURCE VOLTAGE (VOLTS.

0.. TOTAL GATE CHARGE (nC.

Typical Capacitancli VI. Drain to Source VoHage

Typical Gate Charge Vs. Gat..To-Source Voltage

/"
IV
II/

Ii)

IE

vi

VI

~lJ

z~

4

V..=2OV

~
·ma:

3

jV

Z
0

w

..IV

()

~

a:

15

~

I'-..

~

i.

~
~

\

:t

.-;--,

0

~I;'

400

o

20

~

c.os

()

200

~
>

r--....

z

c

'

~

~

--

1"'-"

~r-

2

~

r- r--- r-......
IRf 3r;;:;-.

Aosianl MEASURED wmt
CURRENT PUlSE OF 2;C¥-

(HEArnG EFFEC1i
rErT

IRF 320,1

b- I'- ~

~"" ~

DURATION INITlAt. TJ"'25°C

1

II
o

6

9

12

·15

ID. DRAIN CURRENT (AMPERES.

'\

a

25

50

75

100

125

,

~

150

Maximum Drain Current Vs. Case Temperature

~
1\

5

'\

I'-

'\

5

~

0
5

a

a
TA. AMBIENT TEMPERAJURE (OC.

Typical On-Resistance Vs. Drain Current

40

1

I\.
\.

20

40

60

80

100

120

140

160.

TA. AMBIENT TEMPERATURE (OC.

Power VI. Temperature Derating Curve

-ciS SAMSUNG SEMICONDUCTOR

112

N-CHANNEL
POWER MOSFETS

IRF330/331 1332/333
FEATURES

•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysillcon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
10-3. package (Standard)

TO-3

PRODUCT SUMMARY
. ROS(onl

Part Number

Vos

IRF330

400V

1.00

5.5A

IRF331

350V

1.00

5.5A

IRF332

400V

1.50

4.I5A

IRF333

350V

1.50

4.5A

10

II

'.
'.

MAXIMUM RATINGS
Symbol

IRF330

IRF331

IRF332

IRF333

Unit

Drain-Source Voltage (1)

Characteristic

Voss

400

350

400

350

Vdc

Dr.ain-Gate Voltage (RGs= 1.0MO)(1)

VOSR

400

.350

400

350

Vdc

Gate-Source Voltage

VGS

Continuous Drain Current Tc=25°C
Continuous Drain Current Tc=100°C

±20

Vdc

10

5.5

5.5

4.5

4.5

Adc

10

3.5

3.5

3.0

3.0

Adc

22

22

18

18

Adc

Drain Current-Pulsed (3)

10M

Gate Current-Pulsed

1m"

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

75
0.6

Watts
W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage .
Junction "Ttmperature Range

lIl'

Maximum Lead Temp. for Soldering
Purposes, 1/8· from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width.. 300IlS, Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

113

N-CHAHNEL
POWER MOSFETS

IRF330/331 1332/333
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero Gate Voltage
Drain Current

On-State Drain-Source
Current (2)

Static Drain-Source On-State
ReSistance (2)

Symbol

BVoss

Type

-

-

V. VGS=OV

IRF331
350
IRF333

-

V

lo=250pA

4.0

V

Vos=VGs. lo=250j.lA

100

nA

VGS=20V

-100

nA

VGS=-20V

250

j.lA

Vos=Max. Rating. VGs=OV

1000

pA

Vos=Max. RatingXO.8. VGS=OV. Tc=125°C

IRF330
5.5
IRF331

-

-

A

IRF332
4.5
IRF333

-

-

A

0

ALL

2.0

IGSS

ALL

-

'IGSS

ALL

loss

ALL

Ros(on)

-

0.8

1.0

IRF332
IRF333

-

1.0

1.5

0

-

0

grs

ALL

Ciss

ALL

Output CapaCitance

COSIi

ALL

Reverse Transfer CapaCitance

Crss

ALL

Turn-On Delay Time

td(on)

ALL

t,

ALL

tct(off)

AkL

tf

ALL

Qg

ALL

Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

Vos>IO(on)XROS(on) max .• VGS= 1 OV

IRF330
IRF331

Forward Transconductance (2)

Rise Time

Test Conditions

Max Units

IRF330
400
IRF332

Input CapaCitance

Turn-Off Delay Time

Min' Typ

VGS(th)

IDlon)

(Tc=25°C unless 0lherwise specified)

Gate-Source Charge

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

THERMAL RESISTANCE

,

Junctlon-to-Case

RthJC

ALL

Case-to-Sirik

RthCS

ALL

Junction-to-Ambient

'RthJA

ALL

VGs=10V.lo=3.0A

3.0 4.4

-

Vos>IO(on)XROS(on) max.• lo=3.0A

730 900. pF
100 300

pF

50

80

pF

-

30

ns

35

ns

55

ns

35

ns

18

30

nC

4.0

-

nC

14

- - 1.67
- 0.1 - - 30

VGs=OV. Vos=25V. f=1.0MHz

Voo=0.5BVoss. lo=3.0A. Zo=15 0
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. lo=-7.0A. Vos=0.8 Max. Rating
'(Gate charge is essentially independent of
operating temperature.)

nC

K/W

K/VIi Mounting surface flat. smooth. and greased

K/W Free Air Operation

Notes: (1 i TJ=25°C to 150°C
(2) Pulse test: Pulse width<300,.s. Du,ty Cyc1e<2%
(3) Repetitive rating: Pulse width Hmited by max. junction temperature

c8SAMSUNG SEMICONDUCYOR

N-CHANNEL
POWER MOSFETS

IRF330/331 1332/333

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol

Characteristic
Continuous Source Current
(Body Dio,de)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Type Min Typ
IRF330
IRF331

Max Units

-

-

5.5

IRF332
IRF333

-

-

4.5

IRF330
IRF331
IRF332
IRF333
IRF330
IRF331

- - - -

IRF332
IRF333

-

-

-

A
A

Test Conditions

_k>d

~

MOSFET ",mOOI

showing the integral
reverse P-N junction rectifier

22

A

18

A

1.6

V

Tc=25°C, Is=5.5A, VGs=OV

1.5

V

Tc=25°C, Is=4.5A, VGS=OV

G
S

-

Reverse Recovery Time.
ALL
600
ns TJ=150°C, IF=5.5A, dIF/dt=100A/,.s
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth

,

0

l

-

VGS 6V

~~~A:e:1 mo.

1

iii

..

III

iii

V

II

J5 .5V

I!

$

6

...
Z

III

«
«
:::>

VGS-5V

"z

TJ =12S"C

C
«
c

I

TJ =25"C

I

.9

V

TJ --55"C

45V

2
V -4V

o

50

100

150

200

250

300

o

10

1
2
3
4
5
6
VG.. GATE-TO-SOURCE VOLTAGE (VOLTS)

,
OPERAnoN IN THIS

""j=SV

~

~

'f"

VG8-L

£, ~

1

~

.-..
II

--

7/'

IAF 332,3

I

L

-

f--.I

AREA IS UMITED
BY RIlSI...1

r--1RF 330.1

/. ~ ~=5L'V

6

rn

Typical Transfer Characteristics

Vas'-"'p

aOJ$ Pulse Test

If!J

.h'I

vos, DRAIN-TD-SOURCE VOLTAGE (VOLTS)
Typical Output Characteristics

10

~

,,

I--IRF 330,1
'0",
IAF 332,3

,,

,"

I

'II"'
'Ii

VGS=4.5V

V"
f

I

VGS""4V

2
4
6
8
VDS, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8

~

r-I--

SAMSUNG SEMICONDUCTOR

10

o1

10ms

Tc=25"C
TJ -150"C MAX
R.r.Jc=1 67 KIW

Siillrm

20

IRF"331,3
IRF 330,2

'11om

50
10
20
50
100 200
500
VDS, DRAIN-To-sDURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

115

N-CHANNEL
POWER MOSFETS

IRF330133113321333·

I

.'

5

2
1

0-0.5

0"02

i.- 1--1-'"

OJO:;/5

~

~Ijiiii~

:rr-u-L
~1~

lsi"

SINGLE PULSE ITRANSIENT
THERMAL IMPEDANCE)

0-002

5

~

.....

oloi.

-

0-0.01

...
2

1.

~ty Factor. o=..!!..

"

.
2. Per Unit Base=Ro.Jc""1.67

Deg. O/W.

3. T...Tc""POMz....c (t).

0.0 1
10'

5

10-'

.,

2

I IIIIIII

.,

5
10
2
5
10
2
5
10'
11. SQUARE WAVE PULSE DURATION (SECONDS)

2

5

I I I I III
5

1

10

Maximum Effective Transient Thermal Impedance Junction- tcX:ase Vs. Pulse Duration

10

80~

Test.l

Pulse
VoV'OIDn)XRos.anJ ....

TJ ",,-55°C

V

...-

T,~25'C~

1'....... V

TJ =12SoC

VI y .....

,I
o

I.f(/

2

4

6

0.1 0

10

8

10. DRAIN CURRENT (AMPERES)

Typical Transcounductance Vs. Drain Current

2.5
w

U

1.15

~61.05

i~
we

U:I!

a: a:

~~ 0.95

z
~

...

i

.......- ~

...V ......

2.0

/

~
w

a:

.......- V

~s

wI!;!
u:::i

/
1.5

./

!!i~

~~

~~

6'

i!!i

3

2

Typical Source-Drain Diode· Forward Voltage

1.25

~g

1

VOD. SOURCE·TOlORAIN VOLTAGE (VOLTS)

1.0

C

a:

,.
i

0

0.85

0.5

-

...... ./'

""

V

V
VGS-1OV
1o'"'3A,

0.75

-40

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC) ..

160

Breakdown Voltage Vs. Temperature

c8SAMSUNG SEMICONDUCTOR

116

N-CHANNEL
POWER MOSFETS

IRF330/331 1332/333
2000

25

v!. .o

...~

f-1 MHz

1600

J.

~

Ctss-Cgs+Cgd, Cds SHORTEO

C... -C,.,
Coss-Cds+

I

20

w

~

sCgd

Cga+Cgd
=Cds+CgcI

0

>

15

~'"

w

~

l\.

~

c..

10

~

-

\' I'..
r--..

I

~
Coos

20.

30

40

ID"7A

I

1/
a

C

10

50

8

Typical Capacitance Va. Drain to Source Voltage

~
VJ.10V

20

~

1.5

0

w

li!:0

C
0:

~

iIi

,.-"

"~

2.0,,& DURATION INITIAL TJ =-25°C _
21~
1PULSE IS MINIMALl

10
.

15

20

25

10. DRAIN CURRENT (AMPERES)

.........

r-....

:--r-

3.0

..........

i'....

:::~

IRF 330,1

.........

IS

I--

(HEATING EFFECT OF

a

4.5

i:0

AOSIoo1 MEASURED wiTH CURRENT PULSE OF

0.5

I--..

w

~

I

0:

40

60

~

ov

/. I"
~~

Z

~
.

/,

J ~-

"Z
0:

32

7.5

:z:

iii
w

24

Typical Gate Charge Vs. Gat.To-Source Voltage

25

~

16

Q •• TOTAL GATE CHARGE (nC)

VD •• DRAIN-TO-SOURCE VOLTAGE (VOLTS)

w

~

"'V

I!!

1\

_ROV ...... ~

Vos-32DV IHI 3JO~

':"

\
400

t--

9

15

a

......

"" "-""~

,

1\

25

50

75

100

125

150

ITc. CASE TEMPERATURE ('C)

Typical On-Resistance Vs. Drain Current

Maximum Drain Current Vs. Case Temperature

80

I-70

~
z

i

60

"

"\

I\.

'\

50

'\

4a

'"I'\.

a
a
a
20

40

60

80

100

"

120

I\..

140

To. CASE TEMPERATURE-('C)

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

117

N-CHANNEL
POWER MOSFETS

'IRF340/3411342/343,
FEATURES
• Low RDS(on)
• Improved Inductive ruggedness
• Fast switching times
• Rugged poIysllicon gate cell structure
• Low input capacitance
.' Extended safe operating area
• Improved high temperature reliability
• T0-3 package (Standard)

TO-3

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF340

400V

0,550

10A

IRF341

350V

0,550

10A

IRF342

400V

0,800

8.0A

IRF343

350V

0.800

8.0A

MAXIMUM RATINGS
Symbol

IRF340

IRF341

IRF342

IRF343

UnH

Drain·Source Voltage (1)

Voss

400

350

400

350

Vdc

Drain-Gate Voltage (RGs= 1 .OMO)(1)

VDGR

400

350

400

350

Vdc

Gate-Source Voltage

VGS

8.0

8.0

Adc
Adc
Adc

Characteristic

Continuous Drain Current Tc=25·C

10

Continuous Drain Current Tc=100·C

±20
10

10

Vdc

10

6.0

6.0

5.0

5;0

Drain Current-Pulsed (3)

10M

40

40

32

32

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25·C
Derate above 25·C

Po

125
1.0

Watts

W/·C

TJ, Tstg

-55 to 150

·C

TL

300

·C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for ,Soldering
Purposes, 1/8" from CBSE! for 5 seconds

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse width~300",s. Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

118

N-CHANNEL
POWER MOSFETS

IRF340/341 1342/343
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

(Tc=25°C unless otherwise specified)

Min Typ

Max Units

Test Conditions

IRF340
400
IRF342

-

-

V

VGs=OV

IRF341
350
IRF343

-

-

V

10= 250,..A
Vos=VGS, 10=250,..A

VGS(th)

ALL

2.0

-'-

4.0

V

Gate-Source Leakage Forward

IGSS

ALL

-

100

nA

VGs=20V

Gate-Source Leakage Reverse

IGSS

ALL

-

-100

nA

VGs=-20V

Zero Gate Voltage
Drain Current

loss

ALL

-

-

250

,..A

Vos=Max. Rating, VGs=OV

On-State Drain-Source
Current (2)

Static Drain-Source On-State
Resistance (2)

lo(on)

ROS(on)

-

-

A

IRF342
8.0
IRF343

-

-

A

IRF340
IRF341
IRF342
IRF~43

Forward Transconductance (2)

1000 ,..A

IRF340
10
IRF341

gls

ALL

Vos=Max. RatingXO.8, VGS=OV, Tc=125°C

VoS>IO(on)XROS(on) max., VGS= 1 OV

-

0.30 0.55

11

-

0.60 0.80

11

VGs=10V,lo=5.0A

4.0

7.0

-

0

Vos>lo(on)XRos(~n) max., 10=5.0A

Input Capacitance

CISS

ALL

-

Output Capacitance

Coss

ALL

250

450

pF

Reverse Transfer Capacitance

Crss

ALL

-

50

150

pF

Tum-On Delay Time

td(on)

ALL

-

35

ns

t,

ALL

-

15

ns

90

ns

35

ns
nC VGs= 1 OV, 10= 12A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
nC
operating temperature.)
nC

1300 1600

pF

td(off)

ALL

tl

ALL

-

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

-

41

60

Gate-Source Charge

Qgs

ALL

Qgd

-

6.0

ALL

35

-

-

-

1.0

K/W

0.1

-

-

30

KIW
KIW

Rise Time
Tum-Off Delay Time
Fall Time

Gate-Drain ("Miller") Charge

VGs=OV, Vos=25V, f=1.0MHz

Voo=0.5BVoss, 10=5.0A, 20=4.711
(MOSFET switching times are essentially
independent of operating temperature.)

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

Rthcs

ALL

Junction-to-Ambient

RthJA

ALL

Mounting surface flat, smooth, and greased
Free Air Operation

Notes: (1) TJ""25°C to 150°C
(2) Pulse test: Pulse wldtMi300,..s, Duty Cycle",,2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

119

N-CHANNEL

IRF340/341 1342/343

.POWER MOSFEtS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Type Min Typ
IRF340
IRF<341
IRF342'
IRF343

-

10

A

-

-

8.0

A

.-

40

A

IRF342
IRF343

-

-

32

~

IRF340
,IRF341

-

-

·2.0

V

Tc=25°C, Is=10A, VGs=OV

IRF342
IRF343

-

-

1.9

V

Tc=25°C, Is=8.0A, VGs=OV

IRF340
IRF341

ISM

Diode Forward Voltage (2)

VSD

c---

Reverse Recovery Time

Test Conditions

-

Is

PulSe Source Current
(Body Diode) (3)

Max Units

ALL

-----

-

800
ns TJ=150°C, .IF=10A, dlF/dt=100A/l-/s
Notes: (1) TJ=25°G to 150°C (2) Pulse test: Pulse wldth .. 300I-/s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
30

I

trr

Mod_ Ma8FEr .,..,,""
~
showing the integral
reverse P-N junction rectifier . G
s

8Oj.Is

VGS-U)V

5

Pulse !est

IlL

5

fJ

Vas-BV

~ITJ=125oJ

0
Vos·7V-

0

~T'=25'Cb

j

I-5

T,--55'1'

5

. vG/S-ev

80f.1S Pulse Test

-

VDs>IDlonlxAostanimax

0

0
)

TJ'=125"C1,

5r-~'=25'~~~
T.r=-55"C

1vGS-s-

5

"w

Vos-4V

o

~

W

00

00

VGI=1OV

.L

~

5

0

b.

c8

2

4

6

8

10

12

Typical Tralls'er Characteristics

0

o

o

• Vas. GATE-T0-50URCE VOLTAGE (VOLTS)

eJputselest

1.

/

1W

Typical Output Characteristics

5

5

100

VDS, DRAlN-T0-50URCE VOLTAGE (VOLTS)

/
-,r

~

vy

~ vGB-av

~V

~•
_

!Ii

OPERATION IN THIS
AREA IS UM1TED
BY,Ro I

~
-~
2'I--I-I"RFLoH-J.-t-l'I,I-tthr"rk-,
, H-fl'tttt--o~f":t-ttttttl

O:!~I!~IIII~~~III1~~It'~'~~~1I
IFiF342,

5

! 2~

VGS -6

~>

I

'I:

.~ 1.0·~_II'bJ..
I§

",

VGB =5V-

?

V6S-4V

2

,1I1§iI.
F-1"TIJ .

2

105r-,IAF340,1
~

VGS -7V

14

4

6

8

10

R

c=25"C
~;, '50'C MAX

5~~~~u~

lOOms

21---:++t-H+H+---++t-HIttt\",,341.,3, DC
0.1
I \RF340., 2
1.0 2 5 10 20 50 100 200 500

illUI

ttt

Vos, DRAIN-To-sDURCE VOLTAGE (VOLTS)

Vos, DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum Sa'e Operating Ares

SAMSUNG SEMICONDUCt:0R

120

N-CHANNEL
POWER MOSFETS

IRF340/341 1342/343
2

ffi

!_

i

10

[!:2

to;,.,

05

I,LI::::)

~~
lr~
"'z
~a

....

-,
-

,0. 2

~! o. 1

IE ..

lICe

..... 10-: i;jiiP.
~

D-O

i 1 0.05 "D_

~Ir1SL
~,---j

&NGlE PUlSE (TRANSIENT
THERMAl IMPEDANCE)

fl!

]

NOTES

~

1 Duty Faclor D"~
.
1,

~ 0.0 2

2 Per Urot Base-RfIIJC==1 0 Deg CIW
3 TJt,4""Tc =P[JMZtt.JC It)

0.0 1
10

-.

10

~

5

I I IIIU

11111111

1Q.J

2

5

10.1

10-'

5

5

1

2

5

10

It. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs_ Pulse Duration

5

103

r- r-LpLJ

5

Vos>IotQnIX~I"'"

2

f

i
~.

9

V L.- r-LL V"

6

3

TJ

/1/

=2l c
o

TJ=JsoC

II

2

TJ "-55°C

V ....-

,
=

5

r-

b

A.

2

i"'"

,

J

J

.l.

0

l
[I

r----- TT -150°C
-25°C

5

..1J

2

II

10

5

10
15
20
In. DRAIN CURRENT (AMPERES)

25

o

r-TJIII150°C

~T51
2

3

4

5

VSl), SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Va. Drain Current

Typical Source-Drain Diode Forward Voltage

1.2 5

2.5

5

'1.,...00- j.;

..... ~

5

.".
5,.".-

L

I--""

V

l/

V

./

r--

5

,.".

,,/'

5

""

V

v

,/

1'1
VQ/j=1OV

to-SA

0.7 5
40

o
40
80
120
. TJ, JUNCTION TEMPERATURE (OC)
Breakdown Voltage Ys. Temperature

=8SAMSUNG SEMICONDUCTOR

160

40

0

40
80
120
TJ, JUNCTION TEMPERATURE (OC)

160

Normalized On-fleslstance Vs. Temperature

121

'N-CHANNEL
POWER.MOSFETS

·IR~340/341/342/343
20

t-18

U. v~=a.l 1

oo~ r--

,

\

iw 1200

,~
U

5
I

fKl MHz
Cisa-qgs+Cgd, SHORTED
C...-Cgd
Cooa=Cds+ CgoCgd
Cgs+Cgd

I

I

IIICds+Cgd

.......

Ciss

•

5

Vos-BOV

t-- V

Il6 ""320V,

.. ~

\ \

00

\

I\..
5

~

'"

10

15

20

IIII

Coos

,;;: ~

25

30

35

40

45

50

~i'2A

o

20

2.0

I

i
I!!

1.6

- r-

MEASURED WIll-! CURRENT PULSE OF

2.o,s DURATION. INITIAL TJ -25"C. (HEATING
EffeCT OF 2 0f'S PULSE IS MINIMALl

80

8 ......

,

.........

"- '"".......

j".....

"'"

li

~340.1

r--..... ....... "-

~~

1RF342,3

Vos=1V-

..-

4

1-

o

10

~~

20

30

4

r'\

1100-2011

'2

40

50

la. DRAIN CURRENT (AMPERES)

100

......

1.2

8

80

Typical Gate Charge Vs. Gat..To-Source Voltage

o!"'~I

40

A.. TOTAL GATE CHARGE InC)

V... DRAIN-TO-SOURCE VOlTAGE (VOLTS)

Typical Capacitance V •• Drain to Source Voltage

".

I

5

.........

.....

o

IAF 340.2

o

........

,

VD9=20~~

.

~

'\

0
25

50

75

100

125

150

TA. AMBIENT TEMPERATURE ("C)

Typical On-Resiatance Vs. Drain Current

Maximum Drain Currant Va. Case Temparatura

180
140

-~

" "'I\..

'""-

r\.

'\

~

I\..

"- ~

0

o

"'- ~

20

40

60

80

100

120

140

160

TA. AMBIENT TEMPERATURE ("C)

Power Vs. Temperature Derating Curva

c8 SAMSUN~

SEMICONDUCTOR

122

N-CHANNEL
POWER MOSFETS

IRF350135113521353
FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability.
10-3 package (Standard)

TO-3

PRODUCT SUMMARY
Part Number

VDS

RDS(onl

ID

IRF350

400V

0.30

15A

IRF351

350V

0.30

15A

IRF352

400V

0.40

13A

IRF353

350V

0.40

13A

MAXIMUM RATINGS
SymbDl

IRF350

IRF351

IRF352

IRF353

UnIt

Drain-Source Voltage (1)

Voss

400

350

400

350

Vdc

Drain-Gate Voltage (RGs= 1 .0MIl) (1)

VOOR

400

350

400

350

Vdc

Gate-Source Voltage

VGS

Characteristic

Vdc

±20

Continuous Drain Current Tc=25°C

10

15

15

13

13

Continuous Drain Current Tc=100°C

10

9.0

9.0

8.0

8.0

Adc

Drain Current-Pulsed (3)

10M

60

60

52

52

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

150
1.2

Watts

W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Adc

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300"s, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

ciS

SAMSUNG .SEMICONI;>UcrOR

123

N-CHANNEL
·POWER·MOSFETS

IRF350135113521353
ELECTRICAL CHARACTERISTICS
Chllracterlstlc

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol Type

BVoss

VGS(th)

Gate-80urce Leakage Forward

V

VGs=OV

IRF351
350
IRF353

....!.

-

V

10= 250,..A

-

4.0

V

Vos=VGS. 10=250,..A

100

nA VGs=20V

ALL

2.0

-

ALL

IGSS

Zero Gate Voltage
Drain Current

loss

ALL

IRF350
15
IRF351
IRF3~2

/

,..A

-

A

-

0.25

0.3

0

IRF352
IRF353

-

0.3

0.4

0

11

-

CiSS

ALL

Outpuf Capacitance

-

Coss

ALL·

Crss

ALL

Turn-On Delay Time

td(on)

ALL

t, .

ALL

td(off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate~Drain)

Qg

ALL

Gate-Source Charge

Qg~

ALL

. Qgd

ALL

Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

VGS=10V.10=8.0A

Input Capacitance

Reverse Transfer Capacitance

Vos=Max. Rating. VGS=OV

Vos>IO(on)XROS(on) max .• VGs=10V

IRF350
IRF351

8.0

Gate-Drain ("Miller") Charge

250

1000 jJ.A

A

ALL

Fall Time

-

-100 . nA VGs=-20V

-

gr.

Turn-Off Delay TIme

-

Forward Transconductance (2)

Rise Time

!

13

IRF353

Ros(on).

Test Condltlo!1S

-

ALL

Static Drain-Source On-State
Resistance (2)

Max Units

-

IGSIl

10(on)

Min Typ

IRF350
400
IRF352

Gate-Source Leakage'Reverse

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise specified)

2630 3000

0

600

pF

130

200

pF

35

ns

65

ns

150

ns

75 .

VGs=OV. Vos=25V. f=1.0MHz

Voo=0.5BVoss. 10=8.0A. Zo=4.7 0
(MOSFET switching times are essentially
independent of operating temperature.)

ns

73

120

nC

14

-

nC

KJW

59

Vos>lo(on)XRDS(on) max .• 10=8.0A

pI:

390

-

I

VGs=10V;10=18A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.) .

nC

THERMAL RESISTANCE
Junction-ta-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

0.83

0.1

-

KJW Mounting surface flat. smooth. and greased

-

30

KJW Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300,..s. Duty Cycle<2%
.
(3) Repetitive rating: Pulse width limited by max. Junction temperature

c8

SAMSUNG SEMICONDUCTOR

124

N-CHANNEL
POWER MOSFETS

IRF350135113521353

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Type

-

Is

IRF350
IRF351
IRF352
IRF353
IRF350
IRF351
IRF352
IRF353

-

IRF350
IRF351

-

IRF352
IRF353

-

!

ICOOM~'
"'"ro. C,,'oo'
(Body Diode)

- - - - - - - - - - - t---

Pulse Source Current
(Body Diode) (3)

ISM
- - t----

Diode Forward Voltage (2)

Vso

Reverse Recovery Time

Min Typ

- 15 A
- 13 A
- 60 A
1 - - 1---- 1----- 52 A
-I--:
- 1.6 V
- 1.5 V
1000 ns

-

ALL

trr

Max Units

Test Conditions

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

Q[

-------

--------

Tc=25·C. Is=15A; VGs=OV
Tc=25·C. Is=1 3A. VGs=OV
-------

TJ=150·C.IF=15A. dlF/dt= 1 OOA/jots

Notes: (1) TJ=25·C to 150·C (2) Pulse test: Pulse wldth .. 300jots. Duty Cycle.. 2%
(3) Repetitive ratina: Pulse width limited by max. junction temperature
4

10

Bo1'~T~- r--

rt-vGS"""OV

I-V",sBV

YI

Vas=5SV

aJf.IS Pulse iest

0

V~D(onIXron,,,",,,

fa

6
VGs -5V

r---

2

i

~

6

T"'r O\

~

T'=2~OC,\ \

IIC

a:

G

VGS=1 45V

8

TJ~-55OC~

I
CI

50

100

150

200

/II
..;.W'

~.5V t-

Vas

o

.11

.e

VGS~4V_
250

300

o

1
2
3
4
5
6
VOs. GATE-T
~:

fd;
h
~ l!!

0.5

0':"0.5

__

I

0_02

olo 1

0.2

I:'

-

NOTES

:~ o.'~!_IO.OII~III""~I--~-'I§r!I~! IILJL

a::
oC 0.05
~~

~'-ll,----j

0-0,02

~ ~

0=0,01

"",.

£~

SINGLE PULSE (mANSIENT

Tr'Riill'M~rjCE)LJ-ht-++tt-++++1-H+H-+--f---1

r----

I I, 11+11111--l--+-+-t-t-lt+tI+-+-+--+++tttH-+-+-~1

0.02t-i--+-H-t+t-Ht--++-+-t-t-++

.)

Duly Factor 0-+

~~~~1~~~Z:('~O 8~ ~g IC;~

O.O~~~~.~~~~1~1~0-~'~~~~5~~'0b-'~-2~~~5~.~'~O-~'~~2~~~5~~'~0~_,-L~-L.l.~~~~~~~~~'0
11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case VI. Pulse Duration

20

,

Ie
;

16

z~

i

--

. /I---

12

//' /

~

//~

8

".

/1 V

".

~

T'--~~
l'J-25.:£.

-

~25.:.s r--;.;;;;;.-

,,/

~

aoj.18 Pulse Test

IJJ

VCS>I~Q/lIX~onl ""'"

'I

o

8

12

16

20

YSD. SOURCE-Ta-DRAIN YOLTAGE (YOLTS)

Typical Tl'llnsconductance Vs. Dl'llin Current

Typical Source-Drain Dioda Forward Voltage

1.25

~g

1.0O.!:--"-'-,!-..J-~2:--"'--3::-~-'4!-"""'-!:5-'-~

10, DRAIN CURRENT (AMPERES)

2.5

1.15

I

..... /

~61.05

I~
we

..".

~I

S~ 0.95/,

....... I---

......

V

V

. /V

..".

6~

".

~

0.85

""

V

./

v

,;'

V
VGS 10V

~

Io'""SA

~-

0.75

40

o

40

80

120

T... JUNCTION TEMPERATURE (OC)

Breakdown Voltage lIs. Temperatura

c8

SAMSUNG SEMICONDUCTOR

160

o

-40

0

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

Normalized On-Resistance Vs_ Temperature

126

N-CHANNEL
POWER MOSFETS

IRF350135113521353
4000

25

\
\

3200

iii

!:i

~

I\..

i

~
....

au 2400

0

>

~

20

w

c..

~:::~~~

15

V~~320V:::::

w

U

0:

Vas=O

:>

'=1 MHz

:c 1600

CISS=Cgs+'Cgd, Cds sHORTED

U

l

1\

U

~

-

10

.-i

30

40

28

50

Typical Capacitance Vs. Drain to Source Voltage

1

-

Wlri. CUR~ENT P~LSE o~
INITIAL T =25"C (HEATING
rs PULSE IS MINIMALl 1
J

i*
~

J

I--- r--...

II

0.6

/. Vv'as

... ~ P"'"

0.4

~

.f--

0.2
15

14o

r-.

"

-I
75

30
45
60
I•• DRAIN CURRENT (AMPERES)

'\

IRF352,3

0
25

50

75

100

~

'~
"

125

,

~

150

TA. AMBIENT TEMPERATURE ("C)

Mbimum Drain Current Vs. Case Temperature

'-

'r-..

0
0

0

0

'\

""

i\.

0

o

I

.......... ~F350,1
8

Typical On-Reslstance Vs. Drain Current

160

140

.......... ......
.........
.......... i""'-- .........

s2OV

.? / '

05

03

112

r-....

11Io.~.L

0.8
07

~

84

Typical Gate Charge Vs. Gate-To-Source Voltage

t ..,MbASUR~D

2.o.s DURATION
EFFECT OF 2

10:

8A

20

10
0.9

56

a.. TOTAL GATE CHARGE (nC)

Vas. DRAIN-TCl-SOURCE VOLTAGE (YOLTS)

(

~

V

"""

20

~

/

>

Coso

r---

9

A. ~
A. ~

e

"lt

!lrICds+Cgd

~ t--....

10

l-

Cgs+Cgd

\\

800

I

C",,~Cgd
Coss=Cde+ CgsCgd

~~

20

40

60

80

100

120

I\.
140

160

TA. AMBIENT TEMPERATURE ("C)

PoW« Vs. Temperature Derating Curve

c8SAMStJNG SEMICONDUCTOR

127

N-CHANNEL
POWER MOSFETS

IRF420/421 1422/423
FEATURES
•
•
•
•
•
•
•
•
•

,Low RDS(on) at high voltage
Improved inductive ruggedness
. Excellent high voltage stability
Fast switching times
Rugged polyslllcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High voltage)

TO-3

PRODUCT SUMMARY
!'art Number

Vos

RDS/on)

IRF420

500V

3.00

2.5A

IRF421

450V

3.00

2.5A

IRF422

500V

4.00

2.0A

IRF423

450V

4.00

2.0A

10 (

\

MAXIMUM RATINGS
Symbol

IRF420

IRF421

IRF422

IRF423

Unit

Drain-Source Voltage (1)

VDSS

500

4,50

500

450

Vdc

Drain-Gate Voltage (RGS=1.0MO)(1)

VDGR

500

450

500

450

Vdc

Gate-Source Voltage

VGS

2.0

2.0

Adc

Characteristic

Continuous Drain Current Tc=25·C
Continuous Drilln Current Tc=100·C
Drain Current-Pulsed (3)
Gate Current-Pulsed

Vdc

10

' 2.5

2.5

10

1.5

1.5

1.0

1.0

Adc

'10M

10

10

8.0

8.0

Adc

IGM

±1.5

Adc

Po

40
0.32

Watts

W/·C

TJ, Tstg

-55 to 150

·C

TL

300

·C

Total Power DIssipation @ Tc=25·C
Derate above 25·C '.
Operating and Storage
Junction Temperature Range

±20

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case fo~ 5 seconds

Not.s: (1) TJ=25·C to 1,50·C
(2) Putse test: Pulse width~300IAs, Duty Cy.cle~2%
,,'
(3) Repetitive rll:ting: Pulse width limited, by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

128

N-CHANNEL

IRF420/421 1422/423

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate ThrE!shold Voltage

Symbol

BVoss

Type

Min Typ

V

VGs=OV

IRF421
450
IRF423

-

-

V

lo=2501lA

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSs

ALL

Zero Gate Voltage
Drain Cur~ent

loss

ALL

-

Forward Transconductance (2)

ROS(on)

-100

nA

VGS=-20V

250

"A

Yos = Max. Rating, VGs=OV.

1000

"A

Vos=Max. RatingXO.8, VGS=OV, Tc=125°C

IRF422
2.0
IRF423

-

-

A

-

2.5

3.0

0

IRF4?2
IRF423

-

3.0

4.0

0

VGs=10V, 10=1.001'

-

IJ

300

600

pF

75

150

pF

20

40

pF

-

60

ns

50

ns

60

ns

30

ns

11

15

nC

5.0

-

nC

1.0 1.75

Clsa

ALL

Cosa

ALL

-

-

-

ALL

Tum-On Delay Time

Ic!(on)

ALL
ALL

lc!(oIf)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg .

ALL

Gate-Source Charge

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

,

Vos>IO(on)XROS(on) max., VGs=10V

IRF420
IRF421

Crsa

Fall Time

VGS=20V

A

Reverse Transfer Capacitance

Tum-Off Delay Time

Vos=VGS, lo-250"A

nA

-

Output Capacitance

Rise Time'

V

100

-

Input Capacitance

t,

4.0

IRF420
2.5
IRF421

ALL

g18

Test ConditIons

-

2.0

Static Drain-80urce On-State
Resistance (2)

Max Units

-

ALL

10(on)

specifie~)

IRF420
500
IRF422

VGS(th)

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise

6.0

Vos>IO(on)XROS(on) max., 10=1.0A

VGs=OV, Vos=25V, f=1.0MHz

Voo=0.5BVoss, 10=1.0A, Zo=500,
(MOSFET switching times are essentially
independent of operating temperature.)

VGS=10V, 10=3.0A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL' RESISTANCE
Junction-ta-Case

RthJC

ALL

Case-to-Sink

RlhCS

ALL

Junction-to-Ambient

RlhJA

ALL

-

3.12 'K/W

0.1

-

K/W Mounting surface flat, smooth, and greased

-

30

KIW

Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300"s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

"$

C8SAMSUNG SEMICONDUCTOR

129.

N-CHANNEL

IAF420/421 1422/423

POWER MOSFEtS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol

Characteristic
Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Reverse Recovery Time

Type

Min Typ

Test Conditions

-

-

2.5

A

IRF422
IRF423
IRF420'
IRF421
IRF422
IRF423

-

-

2.0

A

-

-

10

A

-

8.0

A

-

1.4

V

Tc=25°C, Is=2.5A, VGs=OV

-

1.3

V

Tc=25°C, Is=2.0A, VGs=OV

600

-

ns

TJ=150°C, IF=2.5A, dlF/dt=100AljlS

IRF420
IRF421
IRF422
IRF423
ALL

In-

Max Units

IRF420
IRF421

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

~

Notes:, (1) TJ=25°C to 150°C (2) Pulse test: Pulse width .. 300IlS, Duty Cycle.. 2%
(3) Repetitive rating: Pulse wiqth limited by max. junction temperature
VGS =10Y

Vas

5

~.5Vf--

---:-:-:-_lllB

~est

Pulse

Itr-- r

TJ =125 o

Vas- s.ov

:&
~

....Z

w
a:
a:

4

H+--+-t-t-80J.cs Pulse Test-t-+-+-I--l

iii

w
a:
w
c..

b

J '-25°C ,
TJ =-55°C

Vos>lD(on)XAost...) ;"..

3

"";C
Z

a:
Q

.9

1_ ~~:J:~~C'-

T,~t55'C::::

o

50

100

150

200

o

250

2

Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

r-JPulse

1r9st

,

BV~onl

IRF 422,3

!

J '/

5

IRF

II"

t=?
g=

)V

.I

4221~r

12

16

20

01
10

II

'. r'... '!"if

I"

'ms

Te 25"C
TJ ""150"C MAX
Rtuc=312 KJW

IRF42"~~ .,IoU
IIII

SINGLE PULSE

VGS-45V_
Vas -40V

10,..

,

r-IRF 420,1

~ 1.6

Vas=S.OY

r

c8

14

IRF 420,1

10

Vas ""'S5V

8

12

OPERATION IN THIS
AREA IS UMITED

vGS""e.ov

I'

4

10

V.. ~1V

1//'

o

8

10 2

IV

1

6

Typical Transfer Characteristics

.~-'"#'..I.

/.V

4

VGs, GATE-TO-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

I"-

rIi

.L. ~

Ilif~ ~202'

1111111
5

10

20

50

100

200

lOOms

500

VDS, DRAIN-T0-50URCE VOLTAGE (VOLTS)

Vos, DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum Safe Operating Area

SAMSUNG SEMICONDUcrOR

130

N-CHANNEL
POWER MOSFETS

IRF42014'2114221423
2
0

....""'" t::;iii ~
r1f ""

0=05

5

0""0.2

2

""'"

0-01

.1

",,""'"

0=0.05

o

5

NOTES

InSL
~,~

SINGLE PULSE (TRANS1ENT
THERMAl IMPEDANCe)

002

0-0.01

1 Duty Factor, 0=1;-

i""
2

2 Per UNI 8ase-Rtuc=a. 12 Deg C W
3 T...-Tc.POMZIhJC (t)

1

10

5

~

-.

10

2

5

10-,

2

10-,

5

I 1111111
2

I I I I III

1

5

.2

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Max(mum Effective Transient Thermal Impedance Junction-t~ase Vs. Pulse Duration

103

5

5

80/ols Pulse Test I

i

-55~

TJ

,L'/"

3

I
t

II

V05>I~""IXRosI""1 m••

4

V

1

V

/'

~V

..-

2

TJ 'F25"C

~I"""

TJ -12S"C

5

f--

i-"""""

11/V".
JW

0

II

TJ =1S0·C

1

2

3

4

5

VSD. SOURCE-TO-DRAIN VOLTAGE (VOLTSI

Typical Source-Drain Diode Forward Voltage

2. 5

5

V

5

L

V

i-"

r--

0

V
V
./

5

",..

./'

/ "V

V
./
I-""

5

0.7 5

o

40

80

120

TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

c8

TJ =1S0·C

1. 0
2
3
4
)0. DRAIN CURRENT (AMPERES)

1.2 5

40

...

T~_j5OC

Typical Transconductance Vs. Drain Current

5,..,

~

1/

il

".

Tr 2S·C

2

SAMSUNG SEMICONDUCTOR

160

o

-40

--

V

0

VGS=10V

1~1AI_

-

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

Normalized On-Resistance Vs_ Temperature

131

N-CHANNEL
POWER MOSFETS

IRF420/421/422/423
1000

i

III

j""-o

1.

""'-Cgd

I

f=1 MHz
CISS-Cgs+Cgd, Cds SH RTEC

80

20'~-1---+---b--+---+--1---+~-r--+---i

cOss-Cds+~=gd ~
~+Cgd

•

600

I~

1\
0:\

t--

ti

Crs.

200 \

\' ""-

eo..

"-

o

"'"

10
20
30
40
VI)$, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

50

4

Typical Capacitance Vs. Drain to Source Voltage

1
Ii)

II!

:z:

e
~

.• !~

ALI MJASUREl ~JCURRENT PULSt±

0

2

9

;!!

8

rll

7

II:
Z

0
III

I

;
::>

C

II:

"

J

5

A

OJ'S

AI v,,-1

1
4

6
8
10
12
14, 16
I•• DRAIN CURRENT (AMPERES)

18

20

0

0

0
25

50

75

100

.

12.

~

1

,150

Maximum Drain Current Vs. Case Temperature

'\

l\.

'\

5
0

5

o

I"\l\

1\
~

5

~~

TA. AMBIENT TI;MPERATURE (OC)

Typical On-Resistance Vs. Drain Current

\

NRF42Q,1

,6 •

V

2

I"'r--... ~

'RF4~ r--.,....... ~

2

1/

3

35

r--....

l"- f'... """

J

4

0

.

~v"-2bv

U

II:

30

(J

6

20

O.-s DURATION

INITIAL TJ -25°C
(HEATING EFFECT OF 2
pULSE IS MINIMAL)

!!l

8
12
16
Gg• TOTAL GATE CHARGE (nC)

Typical Gate Charge Vs. Gat.To-Source Voltage

""

1\,

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

140

160

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTO,R

132

N-CHANNEL
POWER MOSFETS

IRF430/431 1432/433
FEATURES
•
•
•
•
•
•
•
•
•

Low RDS(on) at high voltage
Improved Inductive ruggedness
Ex.cellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High voltage)

TO-3

PRODUCT SUMMARY

r-

Part Number

Vos

ROS(on)

10

IRF430

500V

1.50

4.5A

IRF431

450V

1.50

4.5A

IRF432

500V

2.00

4.0A

IRF433

450V

2.00

4.0A

I-I--

MAXIMUM RATINGS
Symbol

IRF430

IRF431

IRF432

IRF433

Unit

Drain-Source Voltage (1)

Voss

500

450

500

450

Vdc

Drain-Gate Voltage (RGs=1.0MO)(1)

VOGR

500

450

500

450

Vdc

Gate-Source Voltage

VGS

Characteristic

Vdc

±20

Continuous Drain Current Tc=25'C

10

4.5

4.5

4.0

4.0

Adc

Continuous Drain Current Tc=100'C

10

3.0

3.0

2.5

2.5

. Adc

Drain Current-Pulsed'(3)

10M

18

18

16

16

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25'C
Derate above 25'C

Po

75
0.6

Watts
W/'C

TJ. Tstg

-55 to 150

'C

TL

300

'C

Operating and Storage
Junction Temperature 'Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 lIeconds

Notes: (1) TJ=25'C to 150'C
(2) Pulse test: Pulse width"300,..s. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

133

N-CHANNEL
POWER MOSFE1S

IRF430/43t/432J433

ELECTRICAL CHARACTERISTICS, (Tc=25°C unless otherwise specified)
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRF431
450
IRF433

-

V

10=250/AA

4.0

V

Vos=VGS, to=250jJ!<

100

nA

VGS=20V

-100

IRF430
4.5
IRF431

-

-

A

IRF432
4.0
IRF433

-

-

A

VGS(th)

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

On-State Drain-Source
Current (2)

10(on)

nA VGs=-20V

250

,..A

Vos=Max. Rating, VGS=OV

1000

,..A

Vos=Max. RatingXO.B, VGs=OV, Tc=125°C

Vos>lo(on)XROS(on) max., VGS= 1OV

IRF430
IRF431
Static Drain-Source On-State
'ROS(on)
Resistance (2) .
IRF432
IRF433

-

0.95

1.5

0

-

1.4

2.0

0

Forward Transconductance (2)

-

0

VGS=10V,lo=2.5A

gfs

ALL

2.5 3.2

Input C!lP8Cltance

CisS

ALL

Output CapaCitance

Coss

ALL

Reverse Transfer Capacitance

'Crss

ALL

Turn-On Delay nme

Id(on)

ALL

t,

ALL

td(off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

'ALL

Gate-Source Charge

Qg.

ALL,

Qgd

ALL

- 720 BOO
- 110 200
-. 50 60
- - 30
- - 30
- - 55
- - 30
- 22 30
- 4.2 - 17.B -

Rise Time
Turn-Off Delay Time
Fall Time

Gate-Drain ("Miller") Charge

Test Conditions

Max Units

IRF430
500
IRF432

Vos>lD(on)XROS(on) max., 10=2.5A

pF
pF

VGs=OV, Vos=25V, f=1.0MHz

pF
ns
ns
ns

Voo=0.5BVoss, lo=2.5A, Zo= 15 0
(MOSFET switching times are essentially
independent of operating temperature.)

ns
nC
nC

VGs=10V, 10=6.0A, Vos=O.B Max. Rating
(Gate charge is essentially independent of
operating temperature.),

nC

'--

THERMAL RESISTANCE
Junction-to-Case '

RthJC

ALL

Case-ta-Sink

RItICS

ALL

Junction-tO-Ambierit

RlhJA

ALL

-

-

1.67

K/W

0.1

-

K/W Mounting surface flat, smooth, and greased

-

30

tIDI

05

;:15

D-0.5

.

..

ul!.
~

~a 1
dO.
~i 5

r:

..... I!::~
i-"":

D-O.2

It ~ o. 2

0~e.1

io"'"

......

D-:Ie];;

r-..... Is
SINGLE PULSE

0-0.02

NOTES

IrlSl..-

(~RANSIENT

t=-"i---.j

THERMAL IMPEDANCE)

0-0.01

....

1. Duty Factor. o==..!!..
~.

2

a Pel Unit 8ase=RIhJC=1.67 Deg. OM.
3. T.......Tc·PQM Ztt...c (t)

1
0.0 ,0;

10~

5

10-3

2

5

1~

I I IIIIII
5,0-

2

5

I I I I III

1

5

2

10

Il. SQUARE WAVE PULSE DURATION (SECONDS)

. Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

-

5
T}=-55 C

I

4

/

I

,IV

3

V

/ /
IL L

2

t

V
/

k:::

~

L

j.;"

T'~'25'!

TJ -150"C=

k?

0

100-

"

V V
Vos>lDl<>nIXRD8IonI ....

TJ -150"C

BOpS Pulse Test

,TJ =25"C

5

lJl

'L

TJ-25°~

~

I.1/

1

~ t:::

,

10

2

o. 1
1

2

3

4

o

0.5

10. DRAIN CURRENT (AMPERES)

1

15

2

2.5

VSD. SOURCE-T().DRAIN VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

·1.2 5

2.5

5

V

5

"..

\ .........

V

V

j.;'

V

~

L. V

./

./'

Voo "'10V
lo=2.5A

5

0.7 5

40

80

12.0

TJ; JUNCTION TEMPERATUR.E eC)

Breakdown Voltage Vs. Temperature·

.c8

./

",,-

5

-40

/'

v

SAMSUNG SEMICONDUCTOR

160

0
-40

0

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

Normalized On-Resistance Vs. Temperature

136

N-CHANNEL
POWER IfIIOSFETS

IRF430143114321433
5

2000

Lo

J 1
=:':.bgoeg.\
f-1 MHz

CISS-Cgs+CgcI, Cds SHORTED

1600

Cgs+Cgd

acds+Cgd

i

i

~,

C

V05 -1OOV

'200

800

400

Vos-~50~,

\
\

Vos-40OV

.

"'

,a~
/,;

\
\\

Coos

"-

o

10
W
~
~
V... DRAIN-TCl-SOURCE VOLTAGE (VOLTS)

w

Typical Capacitance Va. Drain to Source Voltage

i

-

I

INmAL TJ -25°C

(HEATING IEFFECT OF 2 ~ PULSE IS MINIMil

~f(

~

/

ID-6A

I
8

16

24

a•. TOTAL GATE CHARGE (nC)

32

.....:: ~

I'--..

........... -"
~
...........

r-....

VGS -10V
VGS=20V

" ","
..........

""

,

IRF 432,3

~ V'

I
~430,'

r-...."

~

\~

1

10

40

Typical Gate Charge Vs. Gat.To-Source Voltage

r--..
I

PU'7'E OF 12 """ iURAiN

-

o

r

-r---., I-....

r- ~t, MJUREO ~rrH ~URREt

,

~

~V'

15

20

25

I •• DRAIN CURRENT (AMPERES)

0
25

50

75

100

125

Tc. CASE TEMPERATURE ('C)

Typical On-Resistance Vs. Drain Current

",

150

Maximum Drain Current Vs. Case Temperature

80

r-70

"

"'I\.

~C

60

!

z

50

~

Iiii

40

"r\.

"'"

30

II

~

,f

20
10

o

'""

i\.

20

40

60
80
100
120
To. CASE TEMPERATURE ('C)

140

160

Power Vs. Temperature Derating Curve

=8

SAMSUNG

SEMICOND~crOR

137

N-CHANNEL
POWER MOSFETS

IRF440/441 1442/443
FEATURES
•
•
•
•
.'
•
•
•
•

Low RDS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability'
Fast switching times
Rugged polysillcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High voltage)

TO-3

PRODUCT SUMMARY
Part Number

VDS'

RDS(on)

ID

IRF440

500V

0.8S 0

8.0A

IRF441

4S0V

0.8S0

8.0A

IRF442

SOOV

.1.100

7.0A

IRF443

4S0V

1.100

7.0A

MAXIMUM RATINGS
Characteristic

IRF440

IRF441

Drain-Source Voltage (1)

Voss

SOO

4S0

SOO

4S0

Vdc

Drain-Gate Voltage (RGs=1.0MO)(1)

VOOR

SOO

450

500

450

Vdc

Gate-Source Voltage

. VGS

Continuous Drain Current Tc=25·C
Continuous Drain Current Tc=100·C

IRF442

.IRF443

Symbol

±20

Unit

Vdc

10

8.0

8.0

7.0

7.0

Adc

10

S.O

S.O

4.0

4.0

Adc

Drain Current-Pulsed (3)

10M

32

32

28

28

Adc

Gate Current-Pulsed

IGM

±1.S

Adc

Po

125
1.0

W/·C

TJ, Tstg

-55 to lS0

·C

'TL

300

·C

Total Power Dissipation @ Tc=2S·C
Derate above 25·C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for'5 seconds

Watts

Notes: (1) TJ=2S·C to 150·C
(2) Pulse test: Pulse widtM300,..s, Duty Cycle.. 2%
.
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8 SAM~UNG

SEMICONDUCTOR

138

N-CHANNEL
POWER MOSFETS

IRF440144114421443
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRF441
450
IRF443

-

V

10= 250,..A

4.0

V

Vos=VGs. 10=2501'A

100

nA

VGs=20V

-100

nA

VGs=-20V

250

I'A

Vos=Max. Rating. VGs=OV

1000

,..A

Vos=Max. RatingXO.8. VGs=OV. Tc=125'C

IRF440
8.0
IRF441

-

-

A

IRF442
7.0
IRF443

-

-

A

IRF440
IRF441

-

0.6

0.85

()

IRF442
IRF443

-

1.0

1.1

()

6.5

-

VGS(th)

ALL

2.0

IGSs

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

Static Drain-Source On-State
Resistance (2)

10(on)

ROS(on)

Vos>lo(on)XROS(on)

gfs

ALL

4.0

Input Capacitance

e.ss

ALL

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

Crss

ALL

-

td(on)

ALL

tr

ALL

td(off)
tf

1200 1600

0

65

-

36

ns

-

15

ns

ALL

-

90

ns

ALL

-

-

30

ns

Qg

ALL

-

34

60

nC

Gate-Source Charge

Q gs

ALL

-

nC

Qgd

-

6.0

Gate-Drain ("Miller") Charge

28

-

nC

ALL

•

lo=4.0A

pF' VGs=OV. Vos=25V. f=1.0MHz

-

Total Gate Charge
(Gate-Source Plus Gate-Drain)

max .•

350

pF

Fall Time

Vos>IO(on)XROS(on)

230

150

Turn-Off Delay Time

OV

pF

-

Rise Time

max ... VGs=1

VGs=10V.lo=4.0A

Forward Transconductance (2)

Turn-On Delay Time

Test Conditions

Max Units

IRF440
500
IRF442

Gate-Source Leakage Forward

On-State Drain-Source
Current (2)

(Tc=25'C unless otherwise specified)

Voo=0.5BVoss. 10=4.0A. Zo=4.7 {}
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. lo=10A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

THERMAL RESiStANCE
Junction to Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.0

K/W

0.1

-

K/W Mounting surface flat. smooth. and greased

-

30

K/W Free Air Operation

Notes: (1) T~-25'C to 150'C
(2) Pulse test: Pulse width';;300,..s. Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

139

N-CHANNEL
POWER MOSFETS

'IRF44014411442/443,

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS.
Characteristic

Symbol

Continuous Source Current
(Body. Diode)

Is

Pulse Source' Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vsc

Type Min Typ
IRF440
IRF44·1
IRF442
IRF443
IRF440
IRF441
IRF442
IRF4.43
IRF440
IRF441
IRF442
JRF443

Max Units

Test Conditions
"

-

-

8.0

A

-

-

7;0

'A

-

-

32·

A

28

A

2.0

'V

Tc=25°C, Is=8.0A, VGs=OV

1.9

V

Tc=25°C, Is=7.0A, VGs=OV

~

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

-

Reverse Recovery Time
110Q
ALL
ns TJ=150°C, IF=8.0A, dIF/dt=100A/,.s
trr
Noles: (1) TJ=25~C to 150°C (2) Pulse test: Pulse wldth"300,.s, Duty Cycle.. 2%
(3) Repetitive- rating: Pulse width limited by max. junction temperature
24

"
j,.

i ,
20

VGS-7V_
VOl ""8Y eo", Pulse Test

~

z

C

i!i

vos"",ev-

-

I

2

8

Vos-5V-

VII

//1
TJ=125~~
1JJJ
L//

-

TJ ",,25°C

4

T,=-55

v~_I.v- -:20
40
60
80
100
VDS, PRAIN-TO-SOURCE VOLTAGE (VOLTS)'

o

120

1
2
3
4
5
6
VOS, GATE-TP-SOURCE VQLTAGE (VOLTS)

Typlca) Output Characteristics

10
8OJ'S

~

Vo.s-l0V

/

10"~~

4ev ~)

OPERATION IN THIS AREA

IS UMITED BY RIl6IonI

~
mF 442,3

Vas-5V

:_~

,,(1'

10-,1.lJ

~~

,

o

~,

'.

I~
IO!¥

I,..

J"

4

7

-IRF 442,3

'/
Ii

' . 'iW.

VGS ""'45V-

lOOms

j.V

c8

Typical Transfer Characteristics

~V

.6

~

Is

'Pulse Jest

/'/
7

..

8

J

/I

12

s

i..

I

Vos>l~XFlIlS(al)""

6

,

16

.

8~PuIseTesl

"

~
IU

,

20

VGS-l~VI

Vos""4V

OC

0.:

Typical Saturation Characteristics

Maximum Safe Operating Area

6

8

SAMSUNG SEMICONDUCTOR

2

IIII

5
10
20
50
100 200 500
VDS, DRAlIHP-SOURCE VOLTAGE (VOLTS)

4

1.0

III ill

Vos. DRAIN-To-SOURCE VOLTAGE (VOLTS)

2

10

IRF441,3
IRF 440,2

140

N-CHANNEL
POWER MOSFETS

IRF440/441 1442/443
2

5

-o~

!"""
2

10-

..... I-!:: ;iii

'"0_

:iii!'

NOTES

IILfL

-

1

-

05

~-j

SINGLE PULSE (TRANSIENT

THERMAL IMPEDANCE)

..

1 Duly Factor O-"!!"

..

2

'

Per Unit ease-Ra,..c-1.0 DeO. C/W.
T~Tc'"'PDMz....c (t).

3.

0.0 1
1~

10~

5

Maximum Effective

15

-

8Oj.ts Pulse Test

10 -,

2

5

10~

5

11/ V
'-l V

11111

Vs. Pulse Duration

TJ -2S°~on)X~) """

2

~

2

11. SOUARE WAVE PULSE DURATION (SECONDS)
Transient Thermal Impedance Junction- t~ase

TJ --S5 C

a

TJ -25"C

5

rl"125

.--

o

b

'f'

2

0=

v'-I' 'j
T

60

TJ -25"C

5

Vi

2
O. 1
4

8
12
16
ID. DRAIN CURRENT (AMPERES)

1

20
•

Typical Transcounductance Vs. Drain Current

3

4

2. 6

5

a

i.,...--' I--"

. . . 1--' I-""'"

5

V

V
V
./

5

...... 1--"

,/

....... .........

./

a

,/'

.,/

I o. V

5

r

Vos""1OV

5

II:

0.7 5
-40

a

40

80

120

T" JUNCTION TEMPERATURE ("C)

BreakdoWn Voltage Vs. Temperature

c8

5

Typical Source-Drain Diode Forward Voltage

1.2 5

5

2

VSD. SOURCE·TO·DRAIN VOLTAGE (VOLTS)

SAMSUNG SEMICONDUCTOR

160

a

-40

a

40

80

120

160

T... JUNCTION TEMPERATURE ("C)

Normalized On-Resistance Vs. Temperature

141

\

N-CHANNEL··
POWER MOSFETS

.IRF440/441 1442/443
2000

J J,

~:;;-~L

5

CISS"'Cgs+Cgd, Cds SHORTED

I

1600

I

Cm-Cgd
Coss=Cds+ CgsCgd
Cgs+Cgd

\

0

~Cds+Cgd

"-

i

.~ 1200

VDS-1,OO~,

5

,\

§

800

400

~~

~P'
I

..........

i'..

5

r-

Coss ~
C'SS

o

Vos=40OV,

0

\\
\~

U

;

VDS=~5DV,

a.ss

t-

-

10
20
30
40
VD•• DRAIN-TO-SOURCE VOLTAGE (VOLTS)

I

1t)=10A

II

w
~
W
M
a•. TOTAL GATE CHARGE (nC)

50

Typical Capacitance Vs. Drain to Source Voltage

100

Typical Gate Charge Vs. Gat..To-Source Voltage

·1 0

i"

.."e.
.,;..

.:Z:

z

:4.0 I--

~R~~' M~ASURE~
WI~
0:=
P~LSE

."

Z
0

II:

:>
0

i
II:

"

I

8

ffi"
...f!i

3.0

$

f~EAn..l EFF~CT OFf•. O", ,l.,LSE IS MINIMAL)

.

II:

CU+T

2 O¢l DURATION.

3.5 I-- r--1NITIAl TJ=25 o d

6

!Z

2:5

g!

V~-1~~

20

II:

"C
z

~

1.0

V

0.5

I'--.

...........
..........

~

.......... NFP440.1
IRFP 442,3'

4

~

~

./

V

--

I'--.

:>

~VOB=20V

1.5

II:

:Ii

--r---.

.e

~

,,~

2

I~

~

,

o

10

15
20 25
30
35
40
10. DRAIN CURRENT (AMPERES)

45

50

0

50

·75

100

125

150

TA. AMBIENT TEMPERATURE (OC)

Typical On-!lesistance Vs. Drain Current

Maximum Drain Current Vs. Case Temperature.

180
140

~

120

-~

'r\.

c

!

z

8c

100

"

80

D

"
~
"...

60
40

~

'\

"'" .....

""-~I\..

i

20

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

140
•

,160

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

142

N-CHANNEL
POWER MOSFETS

IRF450145114521453
FEATURES
• Low ROS(on) at high voltage
• Improved inductive ruggedness
• Excellent high voltage Itability
• Fast switching times
• Rugged polysilicon gate oell ,tructure
• Low input capacitance
• . Extended safe operating ar..
• . Improved high temperature reli.billty
• TO-3 package (High voltage)

TO-3

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRF450

500V

0.40

13A

IRF451

450V

0.40

13A

IRF452

500V

0.50

12A

IRF453

450V

0.50

l;2A

-

II

-"-"

MAXIMUM RATINGS
Characteristic

Symbol

IRF450

IRF451

IRF452

IRF453

Unit

Voss

500

450

500

450

Vdc

Drain-Gate Voltage (RGS=1.0MO)(1)

VOGR

500

450

500

450

Vdc

Gate-Source Voltage

VGS

Drain-Source Voltage (1)

±20

Vdc

Continuous Drain Current Tc=25°C

10

13

13

12

12

Adc

Continuous Drain Current Tc=100°C

10

8.0

8.0

7.0

7.0

Adc

Drain Current-Pulsed (3)

10M

52

52

48

48

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

150
1.2

Watts
W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Operating !!nd Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5'seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300,..s. Duty Cycle.;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUcroR

143

N-CHANNEL

IRF450/451 1452/453

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Tl:lreshold Voltage

Symbol Type

BVoss

Min Typ

V

VGs=OV

IRF451
450
IRF453

-

V

10=250flA

IRF450
13
IRF451

-

IRF452
12
IRF453

-

-

A

2.0

ALL

Gate-Source Leakage Reverse . IGSS

ALL

-

On-State Drain-Source
Current (2)

Static Drain-Source On-State
Resistance (2)

10(on)

RDS(on)

Forward Transconductance (2)

ALL

Vos=VGS, 1I0=2501lA

nA

VGs~20V .

-100

nA

VGs=-20V

250

IlA

Vos=Max. Rating, VGs=OV

1000 IlA

-

VoS>lo(on)XRoS(on) max., VGS= 1 OV

0.4

n

IRF452
IRF453

-

0.4

0.5

0

ALL

Ci..

Output CapaCitance

Cos.

ALL

Reverse Transfer CapaCitance

C,..

ALL

Turn-On Delay Time

td(on)

ALL

t,

ALL

td(olt)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Og

ALL

Gate-Source Charge

Og.

ALL

Gate-Drain ("Miller") Charge

Ogd

ALL

Vos=Max. RatingXO.8, VGs=OV, Tc= 125°C

A

0.38

ALL

Fall Time

V

100

-

gf.

Turn-Off Delay Time

-

.4.0

IRF450
IRF451

Input Capacitance

Rise Time

Test Conditions

Max Units

-

IGSS

loss

specified)

-

ALL

Zero Gate Voltage
Drain Current

oth~rwise

IRF450
500
IRF452

VGS(th)

Gate-$ource Leakage Forward

(Tc=25·oC unless

VGs=10V,lo=7.0A

6.0 10.8

-

-

2850 3000

0

350

600

pF

150

200

pF

-

35

ns

.-

50

ns

-

150

ns

70

ns

77

120

nC

11

-

nC

K/W

-

66

Vos>IO(on)XROS(on) max., 10=7.0A

•

pF

VGs=OV, Vos=25V, f=1.0MHz

Voo=0.5BVoss, 10=7.0A, Zo=4.7 n
(MOSFET switching times are essentially
independent of operating temperature.)

VGs= 1 OV .. 10= 16A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature. See Fig. 8 page 21

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambi~nt

RthJA

ALL

-

-

-

0.83

0.1

-

K/W Mounting surface flat, smooth, and greased

-

30

KIW

.-

-

Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300IlS, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8 S~MSUNG ~EMICONDUcrOR

144

N-CHANNEL
POWER MOSFETS

IRF450145114521453

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)
------.-~-

Type

Min Typ

IRF450
IRF451

Is

-

IRF452
IF.lF453 -

--- - ISM

Diode Forward Voltage (2)

VSD

--

-

-

IRF450
IRF451
IRF452
IRF453
ALL

A

-- - - -

12

A

~J
G

Mod..., MOSFET "mbO
.
reverse P-N junction rectifier

,1300

S

52

A

48

A

1.4

V

Tc=25°C. Is=13A. VGS=OV

1.3

V

Tc=25°C. Is=12A. VGs=OV

-

ns

,

TJ=150°C. IF=13A. dlF/dt=l OOA/"s
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth"300"s. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
20

trr

-

13
----

Test Conditions

------ ----- f - showing the integral

---'---

IRF450
IRF451
IRF452
IRF453

Pulse Source Current
(Body Diode) (3)

Reverse Recovery Time

-

---- -----

Max Units

Vr;,s=10V

8~s 'Pulse

VGS -55V

15

w

0:
W

w

":E

":E

S

w

0:
0:

S

....Z

VGS-5V

10

I

12

W
0:
0:

::>

l

::>

"z

"Cz·

C
0:
Q

Vas""45V

.e

r-

0:
Q

.e

_;~:~~~~c'-..

-

T'=i 55 ' C-....,

VGS"'~V- rI
50
10(1
150
?OO
250
VD •• DRAIN-T0-80URCE VOLTAGE (VOLTS)

300

Vi 10V
8Oj.iS Pulse Test

o

Typical Transfer Characteristics

4.. V

1!

~

/
o

'-

~

"

102

OPERATION IN THIS AREA
15 UMITED BY Ros! ...i

; ; _IRF450, 1

5 r-IRF452. 3

"'

Lli

2

"

IAF450 1

o I-IRF452

'ion
100)16

3

1mB

Vas 45V
10ms

IIIII

/

lOOms

0

t:=::-

5'==
-

T.c 25~C
TJz150°C MAX
RIIIJC=O 83 KlW
SINGLE PULSE

Voo=4V'

IRF450,2

2

I I

1
1
2
3
4
VO •• DRAIN-T0-80URCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8

tU

1
2
3
4
5
6
VOS. GATE-TQ-SOURCE VOLTAGE (VOLTS)

Vas -5V

I~
~ ~ -.

/1.
.//1

.LI.'I

Typical Output Characteristics

10

I

I

iii"

0:

....z

U

e~I:~:~A::1 ma!

16

~

,

20

I r-

Test

SAMSUNG SEMICONDUCTOR

10

IAF451, 3

11111111
2

5

10

20

50

100

200

n

500

VO •• DRAIN-T0-80URCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

145

N-CHANNEL
POWER MOSFETS

IRF450145114521453

I~~~w- 0~~1I1I~~1I~~!l1!1!;$~~~1I~~~1I
~~~~~~~~~~~~~~*=t:~t!l+~~~~~~~~n=~4==t~ttntt=l=t=l=tII1~
Tn n
i
I! 0.05
~z

W::;)

0~D'5

0.5

t 0-02

~

;'~ F50~-.!l.D.~,,"**I;;ff#f=R=!-!+l+!it"1"li--~--t;t1:iR'rrt;;"~H-::Itt11ttlll
0.2

~

0.1

1:J L..J

l..--t-'

0=005

~ ~

~

0-0.01

,E ..

L

~,---j

0-0.02

SINGLE PULSE (TRANSIENT

ii"ml'MPiOAiE'1 1++t+Hf-H--++-+-t+Itt--r--j--,

,....

O~+

D,Iy F.e1O<

] :.::tj:t~~~~titt=t~=~~~I~tIII~II~11~~t=~tIt~+~=t+=t++t~~=+~=~ ~:~~1'~~~~:?~D 8~ O~g~
10-1

10-4

5

10-3

2

5

10-J

2

5

10-'

2

1

5

1

II. SQUAlIE WAVE PULSE DURATION (SECONDS)

Maximum E'!ective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

10

0

f

T,L-55 JC

16

I

I

V
~

lL

,VV

2

IV

i

i-"'"

ti:1~
T'~'F-

TJ -150°C

TJ -25°C

0
5

,II
0

0

V I.---"

JI'

t

W

~

. / i-'"

~~

.~ .

5

eo,.s Pulse Test
Yos>lDlOllIX.t'lD5Ianl_

2

o. 1
4

8

12

16

0.5

20

ID. DRAIN CURRENT (AMPERES)

1

1.5

2

2.5

Vso. SOURCE·TQ-DRAIN VOLTAGE (VOLTS)

TyplcalTransc:ounductance Vs. Drain Current

Typical Source-Drain Diode Forward Vohage

1.25

2.5

~.

~

1.15

i

~iS 1.05

~

i~

L

we

U:I!

a: a:

ai o.95 . "

v

1/~

VI-'"

V

V

",. V

'/
./

~­

V

:i

i

i.

f.-"'"
5

0.85

VG,S=HjV
ID=7A-

I
0.75 40

o

40

80

120

T... JUNCTION TEMPERATURE ('C)

Breakdown Voltage Va. Temperature

ciS

/

SAMSUNG SEMICONDUCTOR

160

-

0
-::"40

0

40

80

120

180

. TJ. JUNCTION TEMPERATURE ('C)

Normalized On-Resistance Vs. Temperature

146 .

N-CHANNEL
POWER MOSFETS

'IRF450/451/452i453
5000

25

v,,~o

f-,

MHz

~

~:~;tr'

4000

\
\

i

~

Coss-Cde+ CgsCgd
Cgs+Cgd

w300 0

"~
0

CiSS

~

20

w

~da+Cgd

>

~~

15

w

Vos-25OV

CJ
a:
::>

~ 2000

10
M
':"

CJ

d
1000

VDl5-4OOV

~

\

"

o

.I

~

\' ~

I

Coos

10

~

20

~

W

1o-18A

o

28

VIIS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Capacitance Vs. Drain to Source Voltage

0.8

f

'I'
V"'-10~.

a:

12

If'

V

/

0.4

140

iii 120

o

10

20

-

'""'

c

l!l

,.

15

100

r jLSE i
aI'S

M'N'iAL.)

30

I

0

40

50

25

50

75

100

125

,

r\

150

Te. CASE TEMPERATURE ('e)

Maximum Drain Current VB. Case Temperature

'\

'\

80

'\.

60

0

lL

,e

""'" '\

I\.

1=

lL

"-

IRF452~ r-.,...... ~F450,

Aoscon! MEASURED WITH CURRENT PULSE OF
EFFjCT OF

160

1JI

rr-......

2 0jAS DURATION INITIAL TJ=25 G C (HEATING

0,3

140

~

10. DRAIN CURRENT (AMPERES)

Z
0

........

3

1"""'

112

r-.... r-...

/

Typical On-Resistance Vs. Drain Current

5
!

..........

9

V

I·'
J

........

)

~

~

I""'- ......

)

VGS=2OV

0,6

84

15

0,7

1

58

a.. TOTAL GATE CHARGE (nC)

Typical Gate Charge VB. Gat.To&Iurce Voltage

40
20

20

40

"-

"- r\.

eo 80
100
120
To. CASE TEMPERATURE ('C)

140

160

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

147

N-CHANNEL

IRFP120112111221123

POWER MOSFETS

FEATURES

• Low
•
•
•
•
•
•
•

ROS(on)

:'rO-3P

Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

PRODUCT SUMMARY
. VDS

RDS(on)

ID

IRFP120

100V

0.300

8.0A

IRFP121

60V

0.300

8.0A

IRFP122

100V

0.400

7.0A

IRFP123

60V

0.40"0

7.0A

Part Number

MAXIMUM RATINGS
Characteristic

Symbol

IRFP120

IRFP121

IRFP122

IRFP123

Unit

Voss

100

60

100

60

Vdc

VOGR

100

60

100

60

Vdc

Drain-Source Voltage· (1)
Drain-Gate Voltage (RGs=1.0MO) (1)·.
Gate-Source Voltage

±20

VGS

. Vdc

Continuous Drain Current Tc=25°C

10

8.0

8.0

7.0

7.0

Adc

Continuous Drain Current Tc= 1 00 ° C

III

5.0

5.0

4.0

4.0

Adc

Drain Current-Pulsed (3)

10M

32

32

28

28

Adc

Gate Current-Pulsed

IGM

±1:5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

40
0.32

Watts
W/oC

TJ, Tstg

-55 to 150

.oC

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 118" from case for. 5 seconds

Notes:,(1) TJ=25°Cto 150°C·
(2) 'Pulse test: Pulse wicUh<;300l's, Duty Cycle<;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

148

N-CHANNEL
POWER MOSFETS

IRFP120/12111221123
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRFP121
60
IRFP123

-

V

10= 250lAA

4.0

V

Vos = VGS, 10=2501AA

100

nA VGS=20V

-100

IRFP120
B.O
IRFP121

-

IRFP122
7.0
IRFP123

-

VGS(th)

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

On-State Drain-Source
Current (2)

loss

10(on)

ALL

IRFP120
IRFP121
Static Drain-Source On-State
ROS(on)
. Resistance (2)
IRFP122
IRFP123
Forward Transconductance (2)

1000

JAA

-

A

-

A

Vos=Max. RatingXO.B, VGs=OV, Tc=125°C

VOS>ID{on)XROS(on) max., VGS= 1 OV

-

0.23 0.30

0

-

0.30 0.40

0

VGs= 1 OV, lo=4.0A

1.5

3.1

-

460 600

p~

220 400

pF VGS=OV, Vos=25V, f=1.0MHz

CiSS

ALL

Cess

ALL

Reverse Transfer Capacitance

Cras

ALL

Turn-On Delay Time

td(On)

ALL

t,

ALL

td(off)

ALL

Fall Time

nA VGs=-20V
IAA Vos=Max. Rating, VGs=OV

ALL

Input Capacitance

Turn-Off Delay Time

250

gfs

Output Capacitance

Rise Time

Test Conditions

Max Units

IRFP120
100
IRFP122

Gate-Source Leakage Forward

Zero Gate Voltage
Crain Current

(Tc=25°C unless otherwise specified)

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qga

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

70

-

-,

100

1>F

40

ns

70

ns 1Voo=0.5BVoss, lo=4.0A, Zo=5010
(MOSFET switching times are essentially
ns
independent of operating temperature.)
ns

100
70

-

9.B

15

3.5

-

-

0.1 '

6.3

I

VOS>ID{on)XROS(on) max., lo=4.0A

nC VGs=10V, lo=10A, Vos=O.B Max. Rating
(Gate charge is essentially independent of
nC
operating temperature.)
nC

THERMAL RESISTANCE
Junction-to-case

RthJC

ALL

Case-to-Slnk

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

3.12 K/W

-

K/W Mounting, surface flat, smooth, and greased

BO

K/W Free Air Operation

Note.: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width.. 300jAS, Duty Cycle.. 2%
(3) Repetitive rating.: Pulse width limited by max. junction temperature

ciS

SAMSUNG SEMICONDUCTOR

149

N-CHANNEL
POWER MOSFETS

IRFP120/121/122/123

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)

Symbol

Type

-

Is

IRFP12D
IRFP121
IRFP122
IRFP123
IRF.P120
IRFP121
IRFP1?2
IRFP123
IRFP120
IRFP121
IRFP122
.IRFP123

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vso

Min Typ

Max Units

Test Conditions

-

8.0

A

-

-

7.0

A

-

-

32

A

-

-

28

A

-

-

2.5

V

Tc=25°C, Is=8.0A, VGs=OV

-

-

2.3

V

Tc=25°C, Is=7.0A, VGs=OV

Modified MOSFET symbol
showihg the integral
reverse P-N junction rectifier

QU

Reverse Recovery Time
ALL
280 ns TJ=150°C, IF=8.0A, d1F/dt=100AlIAS
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth';;300lAs, Duty Cycle';;2% .
(3) Repetitive rating: Pulse width limited by max. junction temperature
4

20

~GS=10V

II

0

eo,.s Pulse Test

1
9V

I--

vGS1sv

I--

."Lv

I--

vGS

J

6

//1

I

-_.

ao,..s Pulse Test,

&i---

A~TJ=125oci_

I ~~J~25OC

2
2

I

VGS""'sv

VGSlsv I--

4

4

f-

o

10

20

30

40.

50

J
~~:~~~~c, II
T;T5~

Voo ""'4V

60

2

VD.; DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

.J,..~Test

I

6

!J

4

If

"v

a

6

10

12

14

Typical Transfer Characteristics

102
OPERAOON IN THIS

,-

IRFP120,1
IRFP122,3

2

IRFLlJ

VG8=6V-

V

'/

AREA IS UMITEO
BYRos..anI

-...

5

,

,."..

100",

,

IRFP122,3

5

,,-,

2

lme

r-...
VGS 5V

01--TJ25"

I::::::YJ-150 CMA?C

10m.

0

5==-~~·~~

J

I

I

ciS

rJ
""--

~ ---..;

A r--7V

8

o

lOV'

W

4

V.... GATIH0-50URCE VOLTAGE (VOLTS)

Typical Output Characteristics

2

~

I--

TJ--55°C

I
't

8

I

8

1//

J.,

_Vos>fOlo.,JxAos!""J ....

lDOme

D.C
IRFP120,2

IRFP121,3

2
VGB=4V

1
2
3
4
Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Typi~1 Saturation Charllcterlstlcs

SAMSUNG SEMICONDUCTOR

O. 1
1.0

1.111111
2

5

10

20

II

50

100 200

I

500

Vos, DRAIN-T0-50URCE VOLT AGE (VOLTS)

Maximum Safe Operating Area

. 150

N-CHANNEL
POWER MOSFETS

IRFP120112111221123

2

I~

1

10

~Z

~~

0=0.5

O. 5

......

t;~

Ww

h

o. 2

i

o. 1

~a
~

Om

~
0-01

r

NOTES

-InSL

~

0-0.05

:IE ..

a:e
~ ~ 0.0 5
~~

r:,.."

I::::; ~~

2

-

0-0.02

~~

SINGLE PULSE ITAANSIENT

THERMAl IMPEDANCE)

0-0.01

~

0.0 2

-.

0.0 1
10

5

10

~

2

-.

1 0 -,
5
2
5
10-,
2
5
10
11. SQUARE WAVE PULSE DURATION (SECONDS)

1

Quty Factor D=...!!..

2
3

TJI,I-Tc=PDMZI~JC (t)

t,.

Per Unit Base=RltoJC=3 12 Ceg CIW

I I 111111
2

5

I I I I I 11

1

2

5

10

Maximum Effective Transient Thermal Impedance Junction-to-Case Vs_ Pulse Duration

5

I

~

4

I
t

V ~ I-"'""
V V V r--

3

2

I'

IL

.I

----- -

103

~

TJ =-56 C

~

TJ =25°C

Q

5

II

2
TJ "125°C

V

5(--

rl

ao,..s Pulse Test,_

If

TJ =15d"c

...J.

2
Vos>JD!on)XRDSlOO1 ""'.

TJ -25°C:'::

(

0

-

5

1

r-2r--

T, 150°0

TJ1SQC

1.0

8
12
16
10. DRAIN CURRENT (AMPERES)

20

o

i

;:ZC

I~
we

./

,.~

1.05

UiE

si

~-

0.95i"""

~

J....--'

~.

0.85

I

0.7 5

V

j..o""

V
/

/'

... V
V

I--"'"

40

o

40

80 _

120

TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

c8

0

I-'"

.",..

·i

6

2. 5

1.1 5

a: a:

3

Typical SourCe-Drain Diode Forward Voltage

1.2 5

"g~

1

VOD. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Typical Transconductance VL Drain Current

SAMSUNG SEMICONDUCTOR

160

o
-40

'"
VGS '""10V'
to-4A-

r---

o

40
80
120
TJ. JUNCTION TEMPERATURE i'C)

160

Normalized On-Resistance Vs. Temperature

151

N-CHANNEL
POWER MOSFETS

IRFP120/121/122/123
1000

5

IYoo-?t
f"'IMHz

C,,-Cge+c.;.. Cod SHORTED

C... -Cod I
I
Coss-Cds+ CgaCgd

800

0

Cge+Cod

1IICd:s+Cgd

1\

i
;

5
§

,

600

5

...

\ :\..
40

-

r- .....

.........

'\

200

~
10

20

30

(//

L

5

/

I

o

A~V
~

Vos.!50V'
t - - t--y~-8OV 'RFP'

0

i"-.

o \

IS

Vos-2OV

40

50

ID",,1DA

V

o

4

8

Typical CapacHance Va. Drain to Source Voltage

o. 8

Typical Gate Charge Va. Gate-To-Source Voltage

....... r--....

Y.-1OV

6

6

O. 4

4

r-.... ......... !'....
r-.... ~

~

:::I

~

I
J

20

81'

L
~

16

11 0

1. 0

I

12

Q .. TOTAL GATE CHARGE (nC)

V... DRAiN-TO-SOURCE VOLTAGE (VOLTS)

~20'1

IRFP622,~"" ",-'

V

o. 2

I)
_10-

I'-.

r" ~

VGSj20V

't\

2

Ll.

Roatan! MEASURED WITH Culv.:NT pULSE OF
2.o,.s DURATION. NITIAI.. TJ "'"25I>C. (HEATIIIG-

Ef'F"f OF to,.s "YLSE ~ MN'Mf
o

00

~

10

~

50

I.. DRAIN CURRENT (AMPERES)

35

'\

50

7

100

125

150

Maximum Drain Current VB. Case Temparature

l\.
1"\

5

"r\.

'\

5

I"

0
5

o

0
25

TA. AMBIENT TEMPERATURE ('C),

.Typlcal OHle.lstence Va: Drain Current

40

~

I

"

i\

20

40

80

80

100

120

140

160

TA. AMBIENT TEMPERATURE ('C)

, Power Va. Temperature D,_tlng Curve

c8

SAMSUNG SEMICONDUCTOR

152

N-CHANNEL

IRFP130/131/132/133

POWER MOSFETS

FEATURES

•
•
•
•
•
•
•
•

Low RDS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polysllicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRFP130

100V

0.180

14A

IRFP131

60V

0.180

14A

IRFP1·32

100V

0.250

12A

IRFP133

60V

0.250

12A

I

MAXIMUM RATINGS
Characteristic

IRFP130

IRFP131

IRFP132

IRFP133

Unit

. VDSS

100

60

100.

60

Vdc

Drain-Gate voltage (RGs= 1 .OMO) (1)

VOGR

100

60

100

60

Gate-Source Voltage

VGS

Drain-Source Voltage (1)

Symbol

Continuous Drain Current Tc=25'oC

10

±20
14

14

Vdc
. Vdc

12

12

Adc
Adc
Adc

10

9.0

9.0

8.0

. 8.0

Drain Current-Pulsed (3)

10M

56

56

48

48

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

75
0.6

Walts

W/oC

TJ. 'Tstg

-55 to 150

°C

TL

300

°C

Continuous Drain Current Tc= 1 00 ° C

Operating and Storage
Junction Temperature Range
. Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150~C
(2) Pulse test: Pulse width.. 300,..s. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction. temperature

c8

SAMSUNG SEMICONDUCTOR

153

N-CHANNEL
POWER AfOSFETS

IRFP130/131/1321133
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

V

VGs=OV

IRFP131
60
IRFP133

-

-

V

10=250jAA

4.0

V

Vos= IiGs, 10=250jAA

100

nA

-

-100

-

250

ALL

2.0

ALL

-

Gate-Source Leakage fleverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

10(on)

-

jAA

1000 jAA

-

-

A

IRFP132
12
IRFP133

-

-

A

IRFP133

-

0.10 0.18

0

,
,

0.20 0.25

0

gt.

ALL

4.0 5.5

-

0

CiSS

ALL

-

680

800

pF

Output Capacitance

Coss

ALL

-

300

500

pF

Reverse Transfer Capacitance' C,••

ALL

-

100 .150

pF

Turn-On Delay Time

td(on)

ALL

t,

ALL

td(off)

ALL

tf

ALL

Qg

ALL

Gate-Source Charge

Qg.

ALL

-

6.0

Gate-Drain ("Miller") Charge

Qgd

ALL

-

12.0

-

0.1

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Vos=Max. RatingXO.8, VGs=OV, Tc=125°C

VGs=10V,10=8.0A

Forward Transconductance (2)

Fall Time

Vos=Max. Rating, VGS=OV

Vos>IO(on)XROS(on) max., VGS=1 OV

Input Capacitance

Turn-Off Delay Time

VGS=20V

nA VGs=-20V

IRFP130
14
IRFP131

IRFP130
IRFP131
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRFP1~2

Rise Time

Test Conditions

-

IGSS

On-State Drain-Source
Current (2)

Max Units

IRFP130
100
IRFP132

VGS(th)

Gate-Source Leakage Forward

(Tc=25°C unless otherwise specified)

18

30

ns

75

ns

40

ns

45

ns

30

nC

-

nC

Vos>IO(on)XROS(on) max., 10=8.0A

VGs=OV, Vos=25V, f= 1.0MHz .

Voo=0.5BVoss, 10=8.0A, Zo= 15
.(MOSFET switching times are essentially
independent of operating temperature.)

VGs= 1 OV, 10= 18A, Vos=0.8 Max, Rating
(Gate charge is esse(ltially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.67 K/W

-

K/W Mounting surface flat, smooth, and greased

80

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widtM300jAS, Duty Cycle",,2%
(3) Repetitive rating:' Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

154

N-CHANNEL
POWER MOSFETS

IRFP130113111321133

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Type Min Typ Max Units·
Test Conditions
iRFP130
14
A
IRFP131
IRFP132
12
A Modified MOSFET symbol
IRFP133
showing the integral
IRFP130
56
A reverse P-N junction rectifier
IRFP131
IRFP132
48
A
IRFP133

~

- -

-

Diode Forward Voltage (2)

VSD

-

-

IRFP130
IRFP131

-

-

2.5

V

Tc=25°C. Is=14A. VGs=OV

IRFP132
IRFP133

-

~

2.3

V

Tc=25°C. Is=12A. VGs=OV

-

Reverse Recovery Time
ALL
360
ns TJ=150°C. IF=14A. dlF/dt=100A/jls
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width

"z

6

TJ 125"C

0:

TJ =-5S"C

Q

.9

vGS-lsv

10
20
30
40
50
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

8~ Pu,). Tes'

VGS=10v;';~GP,-7V

•

~V
6q

3

6

Typical Transfer Characteristics

.102
Vas=6V

OPERATION IN THIS AREA IS UMITED BY

IRFP130,1

5

JV

II:

2

I'.
IRFP130.1

"

rRFP132,3

J

o

VGS

'Om.

=5V-

'OOms
_ Tc=26"C
==!Jt=150"C MAX

DC

_RlhJC=1.67 K1W

-~NGIi'm
Vas=4V

0.1
0.4
08
1.2
1.6
VD•• DRAIN-To-&OURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8

'0,..
100,s

1m,

If

/

~

IRFP132,3

/
~

9

V"'" GATE-To-&OURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10

fVI;

VII

I
VGS=4V

o

If)

T,=25'~'::-:::

C

I

.9

II

~V

0:
0:

=

1

6

12

W

vGSJey.---=

:>

"z

i[

I

1/

l
J
I
II

80.119 Pulse Tsst

Vos>lotanlxRos!anl "'""

16

vos-17v.

16

:Ii

$

VGai BV -

I

u;

....w

,

20

V .. 10V

SAMSUNG SEMICONDUCTOR

2.0

1.0

2

IIIIII

'rI'i"i

IRFP1iO'j

5
10
2Q
50
100 200
500
VDS. DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

155

,

,,'

N-CHANNEL
POWER MOSFETS

,

IRFP130/131/132/133'

1-'

1_
a:t:
I-Z

;2

w:;:)

0,5

~;
lIIlil

o. 2

~I

0, 1

~f5
aI~

i

10

0-0.5'

01 0 . 1

_r-

.-:To.ds

iI ....

i 1 0 .05
j~

Io!lII

~

NOTES

mIL
p~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

0-0.02

a::c

.]

,.,.

, 0=0.2

~i~

0-0.01

... i"'"

1 Duty Factor. 0"'.2..
1,

0.02

2. Per Unit Base""Rt...c-l.67 [)eg. C/W.
3. TJM""Tc-PouZa.x: (t).

/

0.0 1

. 10

10'"

5

5

I 1111111

-,

10

2

5

1Q-.1

2

5

I I 11111

10-1

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

;

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

,

10

10

T~=-561c

i-'" I-"'" T!~26-l.
V i,...--'I -~ Ff'':, ",'25'"=
i·
./
./

J

V/ V i.--" J-"

2

~V

a

Vos>lDlonlXAostonl .....
80,1.c8 Pulse Test

1-5

IV
5

10
15
20
ID. DRAIN CURRENT (AMPERES)

25

,.,... V
O.B 5

..

2

2.5

Typical Source-Drain Diode Forward Voltage

1..,..--1-'

1.05

i

1.5

0

1.1 5

0951""

1

2. 5

Z

~~

I

0.5

V.D. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

1.2 5

t!~

TJ -25°C

O. 1

Typical Transcounductance Vs. Drain Current

a: a::

Tr 150°C

2

II

I~

'f

a

2

IJ

I ..

TJ s 150°C-

~

5

W 1/

a

TJ-25°C

5

-

~

i-""

V

5

V

~

/.

,...V

a

L

V

V'
5
Voo=10V

.~

1o=8~

j;

0.7 5
-40

a

a

40
BO
120
TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Va. Temperature

c8SAMSUNG

SEMICONDUCT~R

160

-40

a

40
80
120
T... JUNCTION TEMPERATURE ('C)

160

Normalized On-Resistance Vs, Temperature

156

N-CHANNEL
POWER M.OSFETS

IRFP130113111'321133
5

2000
Vos·O
'-=1 MHz
CIss=Cgs+Cgd, Cds SHORTED
Crss=Cgd
Coss=Cds+ CgaCgd

I

I

1600

0

Cos+"""

acds+Cgd

i.... 120o \

:c~

,'"U

800

400

VOO=2~~

5

1\

vos",eov

\

-. "-

1\

0

c..

Vos=50V ....
IRFP130,2

~

I

\ ' i'..,

\

1rl"'18A

/

Coos

c...
10
20
30
40
V... DRAIN-TO-SOURCE VOLTAGE (VOLTS)

50

V
o

Typical Capacitance Vs. Drain to Source Voltage

o5

8

16

24

0.. TOTAL GATE CHARGE (nC)

32

40

Typical Gate Charge Va. Gat..To-Source Voltage

0

"",,~,I"'E....lAeD ~11l< CJRRENTIPlJLSEIOF
I

4r-

2.o,.a DURATION. INITIAl.. TJ _25 G C (HEATING
EFFECT OF 2.0.- PULSE IS MINIMAL)

r- f'..

vas- 1OV
3

~

2

-

1

o

~

10

~

I
r-.... I""--... r---.
....... ~
t:;:130,'
r-.... ~
IRFP132.~

I)

V

II

16

VGS=2OV

4

~

50

10. DRAIN CURRENT (AMPERES)

Typical On-Reslstance Vs. Drain Current

0 25

50

~

~

75
100
125
T,. CASE TEMPERATURE (OC)

&
J

150

Maximum Drain Current Vs. Case Temperature

(.

80

I-0

""

""

0

~

"

0

~

0

0

0

=8

I\.
\.

20

40
60
80
100
120 140
Tc. CASE TEMPERATURE (OC)
Pnw,.,. V, TNnNilor.tllr. n....tlnn r. .. rvtl

SAMSUNG SEMICONDUCTOR
\

160

157

N-CHANNEL
POWER MOSFE1S

IRFP1.40114111421143
FEATURES
•
•
•
•
•
•
•
•

Low ROS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRFP140

100V

0.0850

27A

IRFP141

60V

0.0850

27A

IRFP142

100V

0.110

24A

IRFP143

60V

0.11 Q

.241\

.8
~

MAXIMUM RATINGS
Symbol

IRFP140

IRFP141

IRFP142

IRFP143

Unit

Drain-Source Voltage (1)

Characteristic

Voss

100

60

100

60

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOGR

100

60

100

60

Gate-Source Voltage

±20

VGS

Vdc
Vdc

Continuous Drain Current Tc=25'C

10

27

.27

24

24

Adc

Continuous. Drain Current Tc=1 OO'C

10

17

17

15

15

Adc

10M

108

108

96

96

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed
Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

IGM

±1.5

Adc

Po

125
1.0

Watts
WloC

TJ, Tstg

-55 to 150

'c

TL

300

'c

Maximum. Lead Temp. for Soldering
PurpOses, 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width~300lAs, Duty Cycle~2%
(3) .Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

158

N-CHANNEL
POWER MOSFETS

IRFP140/141/142/143
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

V

VGs=OV .

IRFP141
60
IRFP143

-

V

10= 250llA

4.0

V

Vos=VGS, 10=250,..A

100

nA VGs=20V

-100

IRFP140
27
IRFP141

-

-

A

IRFP142
24
IRFP143

-

-

A

ALL

2.0

IGSS .

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

On-State Drain-Source
Current (2)

1010n)

ALL

IRFP140
IRFP141
Static Drain-Source On-State
ROSlon)
Resistance (2)
IRFP142
IRFP143
Forward Transconductance (2)

-

-

0.09 0.11

Input Capacitance

Ciss

ALL

Output Capacitance

Co..

ALL

-

C,••

ALL'

td(on)

ALL

t,

ALL

ld(off)

ALL

tt

ALL

Total Gate Charge
(Gate,Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qg.

ALL

Gate'Drain ("Miller") Charge

Qgd

ALL

Turn-Off Delay TIme
Fall Time

0

I

- - I - - VGs=10V,lo=15A

6.0 10.5

Turn-On Delay Time

nA VGs=-20V
IlA Vos=Max. Rating, VGs=OV

1000 IlA Vos=Max. RatingxO.8, VGs=OV, Tc=125°C

0.06 0.085

ALL

Reverse Transfer Capacitance

250

Vos>IOlon)X ROS(on) max., VGs=l OV

gt.

Rise Time

Test Conditions

-

VGS(lh)

loss

Max Units

IRFP140
100
IRFP142

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

-

1320 1600

0
(J

VOS>IO(on) X ROSlon) max., 10= 15A

pF

600

800

pF VGs=OV, Vos=25V, f= 1.0MHz

250

300

pF

30

ns

60

-

80

ns IVoo=0.5BVoss, 10= 15A, Zo=4.7 0
(MOSFET switching times are essentially
ns independent of operating temperature.)

30

ns

39

60

nC VGs=lQV, 10'=34A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
nC
operating temperature.)
nC

12

-

27

-

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RfhCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1,0

0.1

-

KIW

-

80

K/W Free .Air Operation

K/W
Mounting surface flat, smooth, and greased

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300,.s, Duty Cycle<5t2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

. c8SAMSUNG SEMICONDUcrOR

159

N-CHANNEL
POWER MOSFETS

IRFP140/141/142/143

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
, ' Characteristic

Symbol

Continuol,ls Sourpe Current
(Body Diode)

Type

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Min Typ

Max Units

IRFP140
IRFP141

-

-

27

A

IRFP142
IRFP143

-

-

24

A

IRFP140
IRFP141

-

-

108

A

IRFP14.2
IRFP143

-

Test Conditions

Mqdified MOSFET symbol
showing the integral
reverse P-N junction rectifier

-

96

A

IRFP140
IRFP141 -:-

-

2,5

V

Tc=25°C, Is=27A, VGs=OV

IRFP142
IRFP143

-

2,3

V

Tc=25°C,ls=24A, VGs=OV

-

-

G~

-

Reverse Recovery Time
ALL
500
ns TJ='150°C, IF=27 A, dlF/dt= 1OOA/,..s
trr
'Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width.. 300,..s , Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max, junction temperature

60
50
Vi

,

80~

VGS ""10V

I

VGS-9V

r
...
0:

I

z

vGS-~v

30

!iu
I

40

y,)8Y

0:

80~ ~IgeTest
VDa>IOIan)XADS(an)

I

UI

','

50

I

Pulse Test

'ms

'Oms
Vas "",5V

'21---1-H-Illftttj11++---+-t-t-f'kt+tf:~=',~+ttI

Vas- 4'V

1
2
3
4
Vos, DRAIN·TO-SOURCE VOLTAGE (VOLTS)

Tvoical Saturation Characteristics

c8SAMSUNG SEMICONDUCTOR

1·~"::,0:--*"2"""''-:5~!...11~1'~0-'R_FP::;2~;-4'...."';5t:Ou...:'~OC:~2~'[:;:,...I'"':;T4:*lr!~
vos, DRAIN·TQ-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

160'

N-CHANNEL
POWER MOSFETS

IRFP140/141/142/143

~
~ j::"

1.0

~~

0.5

f!:i

~~

~~
w Z

0.2

fa~
!:>!~
4! I

O. 1

~

D-

0.05

i' .'"

NOTES

IJLJL

~

-

:I ...

~

~jijiii

D~O :

-01,

a:C

i

-

r-D~O

~i~

SINGLE PULSE (TRANSIENT
THERMAl. IMPEDANCE)

1 Duty Factor D=..!!..

t,

2 Per Unit Base" Rt\Jc'" 0 Ceg C/W.
3 TJtrTc"P!II.IZlI>Jc (t)

0.01

10

10

~

I I I IIIII

10-,

5

~

2

5

10

2

I

5

10

I I

I I I II
10

1

11. SQUARE WAVE PULSE DURATION (SECONDS)

.

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

15

2

----'" -

T,

~

, / ..,...

/ /"
1//

9

z/

6

5'C

I

TJ=2stC

l

TJ=12 soc

ffi

TJ =25°C

10

a:
a:

TJ -150°C

13
z

~
!ll

f/

c

80,..5 Pulse Test -

I--

Vos>l~onJXRDS!QIl) rna..

3

!

II

10

f=

~TJ=150°C

TJ =25°C

'I

0

10

20

30

40

50

~

..,...... ....

..... .......

i~
wC

<>:1

a: a:

l

2.0

V

0

....... i--"""

2.4 .

/

5

........

V

085

0.75
-40

V

. /V

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

c8

11 6

5

::is'1.05

~

12

Typical Source-Drain Diode Forward Voltage

i
~

08

Typical Transconductance Vs. Drain Current

1.15

~~ 0.95

"

0.4

VOD. SOURCE-TD-DRAIN VOLTAGE (VOLTS)

125

g

1 00

ID. DRAIN CURRENT (AMPERES)

SAMSUNG SEMICONDUCTOR

160

o

-40

./

/'

,r

V
ID-15(- I--

VGS=10V

0

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

Normalized OrHIesistance Vs. Temperature

161

N-CHANNEL
POWER MOSFETS

IRFP,14011.4111421143
3000

25

JC\88:-~~gd,
v,,=O"j .l 1
Cds SHORTED
Cm-Cgd
Coss-Cde+ cgscgd
Cgs+Cgd
=pda+Cgd

2400

I

1\

1800

III

r-....

~

~

,

1200

\

600

I"" r--...

I/D'

J

Coos

1

e...

10

20

30

~O

40

o

fo-34A

I

1/

20

Roeron. MEASURED 'MTH CURRENT PUL.SE Of
f--

PlJRA~: +rrw..

t

J #02S"f

OF 2.0,.& PULSE IS MINIMAL)

,."

60

80

100

TOTAL GATE CHARGE (nCI

Typical Gate Charge Vs. Gat.To-ScIurce Voltage

30

2 o,..s

(H~'nNG_~FFECT~_ I--

I'"

4-..... 1'0..

r--..... f '

,: .
... ~,

40
Qg.

V... DRAIfHO-8OIIRCE VOLTAGE (VOLTS)

Typical Capacitance Va. Drain to Source Voltage

.0.5

~

A~

0

'f'. r-

o

vrs-sov IRFP140'i~

Qss

'\

\

~::!:~.

5

"

~.

0

I

....r---.. ~

"

';'.',',

"~ ~FP140,1

VQ8,=1OV

,

IRFP 142,3 """

2

2

j

1

'

./
20

40

.

60

~
80.

100

. I•• DRAIN' CURRENT (AMPERESI

~

~

'\~

6

,

II

0
25

50

75

100

125

150

TA. AMBIENT TEMPERATURE ('CI

Typical On-Reslatance Va. Drain Cur,rent

Maximum Drain Current Va. Case Temperature

160
140

1iJ

i

120

I--k.

""'"I\.

;~
m
o·

II.

I

100

6

0

",

40
0

o

20

40

60

60

"t\.. .\.
" "t\..
100

120

140

160

TA. AMBIENT TEMPERATURE ('e)

Power Va. Temparature Derating Curve

c8

SAMSUNG

S~MICONDUcrOR

16 11

N-CHANNEL

IRFP150/151/152/153

POWER MOSFETS

FEATURES
•
•
•
•
•
'.
•
•

Low ROS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TQ-3P

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRFP150

100V

0.0550

40A

IRFP151

60V

0.0550

40A

IRFP152

100V

0.080

33A

IRFP153

60Y

0.080

33A

I

MAXIMUM RATINGS
Symbol

IRFP150

IRFP151

IRFP152

IRFP153

Drain-Source Voltage (1)

Voss

100

60

100

60

Vdc

Drain-Gate Voltage (RGS=1.0MO) (1)

VOOR

100

60

100

60

Vdc

Gate-Source Voltage

VGS

Characteristic

±20

Unit

Vdc

Continuous Drain Current Tc=25·C

10

40

40

33

33

Adc

Continuous Drain Current Tc= 1 00· C

10

25

25

20

20

Adc

10M

160

160

132

132

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed
Total Power Dissipation @ Tc=25·C
Derate above 25·C
Operating and Storage
Junction Temperature Range

IGM

±1.5

Adc

Po

150
1.2

W/·C

TJ. Tstg

-55 to 150

·C

TL

300

·C

Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds,

Watts

Notes: (1) TJ=2S·C to 150·C
(2) Pulse test: Pulse width';;300,..s. Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction .temperature

c8

SAMSUNG SEMICONDUCTOR

163

N-CHANNEL
IRFP150115111521153·

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min

V

VGs'F9V

IRFP151
60
IRFP153

-

V

10=250,..A

4.0

V

Vos=VGs. 10=250,..A

100

nA ~Gs=20V

-100

IRFP150
40
IRFP151

-

-

A

IRFP152
33
IRFP153

-

-

A

2.0

IGSS

ALL

-

Gate-Source Leakage Reverse

IGSS

ALL

-

ALL

-

10(on)

Test Conditions

-

ALL

On-State Drain-Source
Current (2)

Max Units

-

VGS(th)

loss

Typ

IRFP150
100
IRFP152

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

IRFP150·
IRFP151
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRFP152
IRFP153

nA VGs=-20V

250

,..A Vos=Max. Rating. VGs=OV

1000 ,..A Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

Vos>IO(on)XROS(on) max .• VGs=1 OV

-

0.04 0.055

0

-

0.06

0.08

0

9.0 12.3

_.

VGs=10V.10=20A

.. 0· ... ~oS>IO(on)XROS(on) max.; 10=20A

Forward Transconductance (2)

gls

ALL

Input Capacitance

CiSS

ALL

-

2900 3000

pF

. Output Capacitance

Coss

ALL

-

1050 1500

pF VGs=OV. Vos=25V. f= 1.0MHz

C,ss

ALL

-

450

500

pF

. td(on)

ALL

-

35

ns

t,

ALL

100

ns

td(off)

ALL

125

ns

tl

ALL

-

-

100

ns

Qg

ALL

Gate-Source Charge

Qgs

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

nC VGs=10V. 10=50A. Vgs=0.8 Max. Rating
(Gate charge is eSsentially independ8nt of
nC
operating temperature.)
nC

Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

r------.--

Total Gate Charge
(Gate-Source Plus Gate.-Drain)

Voo=0.5BVoss. 10=20A. 20=4.70
(MOSFET switching times are essentially
independent of operating temperature.)

-

72

120

18

-

-

0.1

-

KIW

-

30

i

a:
Q

Pulse Test

vOS>'DlomXR~"'1 .....

-7V

V,

~.

80~

'1/

SAMSUNG SEMICONDUCTOR

I
2.0

10
10

IR P

2

5

10

20

151'T
50

I:P ,150.2

100

200

500 1000

Vos. DRAIN-TD-SOURCE VOLTAGE (VOLTS}

Maximum Safe ODeratina Area

165

N-CHANNEL

IRFP150/151/15~/153

~~

I

POWER MOSFETS

1°1~~III~m~;II~!~~;IEI~~~I~i~811~~'~i~'~'tlll

~ ~ 0.5

0=05

Ii
!
~ ~ t~~b~M~It~t;tt~mf=$:tttt:O~~S~~~1l]""=~~t11'Itt'tttjJJ'l!!!l11
o- 02

... 111

~~

j;.I0lT-l!.lol-F;fj*l;j#=Fl=Fl7I-i"t1it""1~i-":::;;!;;oJ:~~!'fIII-rt1tt1'--MI

r-n O"I;-O~'O!5i!II~lil!I~"""~I-"'~f-"'~ell~!~Eill!! IIL1L
0.2

NOTES

lIE ...

a: '"

~I

~

~t1-1"

0=0 0

0,05

fb...
lU:

~

0=0.01

!'""

SINGLE PULSE (TRANSIENT

JIwtjO~rc:LJ +++++HH---+++++++t--t,--+-

-----1I

1 Duty F-to, 0 __
"

-

t,

0.021-~-I-lf+I++I++-+-H--+JHU-+U+tW+-H-+-+-+
1++++t--+-t-++t-++t1iiIII--tthj--':~' ~:I~r'~~~7~O 8~ ~·IC;~

]

O'~'0~_~,~~~~J~'~0=-'~~~~5~~'O~~~-:2~~~5~~'~O=-'~~2~~~5~Uf.,o~-,~·~~~~~Uf~~~~~~'0
11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

103

20

Iii

z

16

TJ'''-55°C

III

lIE
!!!

TJ -25°C_

!!!

~

.Z

./

12

~r-

r--

2~

...., I::::;;:;:
~-150OC

TJ=12~oC

/ ~/
~ II'"

;!

'"

::>
Q
Z

..I!'~

/

TJ

8

dl

Z

VOS>~on)XRDSConI

I~

Ii

....

BOjAs Pulse Test

III

'"

t-2t--,

'I

10

o

10

·20

30

40

TtoC'

TJ*150°C

o

. ID, DRAIN CURRENT (AMPERES)

1

3

4

i5

Va., SOURCE-T()'oRAIN VOLTAGE (VOLTS)

Typical Source-Drain Diode Forward Voltage

Typical Transconductance Va. Drain Current

1.25

2.5

...

.Iii

tJ

Z

5

V 10--.

z

~

V~

~Q1.05

i~

.....

.."

"'lIE
a: a:

~~ 09

i
Q

5

V

./

V

ffia:

~6

~~

V

2.0

/

1.5

!!i~

/

0:5
:gz

r

1.0

.."

l!i

I

0.85.1

V

. /V

./

V

VtJ8= 1ov_

0.5

~=20t

a:

o

0.7 5

40

O.

40

80

120

T" JUNCTION TEMPERATURE (OC)

RrAAkrfnWn VoltaGe Vs. TemDeratur~

c8

SAMSUNG SEMICONDUCTOR

'60

V

a

-40
.

40

80

-

120

180

T" JUNCTION TEMPERATURE; eC)

Normalized On-Reslstance Va. Temperature

166

N-CHANNEL
POWER MOSFETS

IRFP150/151/152/153
5000

25

Vos""O
, .. , MHz
Clsa-Cga+Cgd, Cds SHORTED

0

C-eoaa"'Cd8+_
Cgs+Cgd
=Cds+Cgd

i

~3000

~!:i:

~

Crss""Cgd

4000

\

'-...

~::~:>

C. .

V.. -eov IRFP'50.2~

.~
2000

U

\
\

U
1000

\

.......

.........

O·

1'0...

I

---

10

-

~

20

/

if

30

40

50

o

28

84

112

140

G.. TOTAL GATE CHARGE (nCI

Typical Gate Charge VB. Gat.To-Source Voltage

40

r--. .......
["'-.

0.2

&&I

56

V... DRAlN-T()'sOURCE VOLTAGE (VOLTSI

TypIcal Capacitance Vs. DraIn to Source Voltage

0.26

I

1o-50A

J

Coos

......... ........

I

Vos-10V
•

a: 0.1 4

~on\ MEASURED WITH

CU~ENT rULSE pF 2

z
o

¥

.,

..........

........

IRFP 152,3

DURATION. INIT1Al TJ -25°C

1

I
I

i
1

.. 0.06

V

../

0.02

40

80

['.. ..... ~

160

200

I •• DRAIN CURRENT (AMPEREIij

0

~'I\.

'1\.\
\~

,

8

V'
Vas=2CN

120

IRFP 150,1

.......

~~=~~~~N:J

I

a
0 ,
.

I'-

1\

25

50

75

100

125

150

TA. AMBIENT TEMPERATURE (OCI

Typical On-Reslstance Vs. Drain Current

MaxImum Drain Current Vs. Case Temperature

l60
140

~

120

!

100

I

'i'\.
\~

'\

'\

80

15

60

~

4a

f

I-- i\..

o

"

~

20

20

40

60

89

laO

120

~

140

160

TA. AMBIENT. TEMPERATURE (OCI

Power Vs. Temperature Derating Curva

c8

SAMSUNG SEMICONDUCTOR

167

N-CHANNEL

IRFP220122112221223

.POWER MOSFETS

FEATURES

•
•
•
•
•
•
•
•

Low RDS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polyslUcan gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature' reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

Vos

ROS(onl

10

IRFP220

200V

0.80

5.0A

IRFP221

150V

0.80

5.0A

IRFP222

200V

.1.20

4.0A

IRFP223

150V.

1.20

4.0A

MAXIMUM RATINGS
Characteristic

Symbol

IRFP220

IRFP221

IRFP222

IRFP223

Unit

Drain-Source Voltage (1)

Voss

200

150

200

150

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOOR

200

150

200

150

Vdc

Gate-Source Voltage

VGS

Continuous Drain Current Tc=25·C
Cont.inuous
Drain Current Tc=100·C
,-_.

±20

Vdc

10

5.0

5.0

4.0

4.0

Adc
Adc

10

3.0

3.0

2.0

2.0

Drain Current-Pulsed (3)

10M

20

20

16

16

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25·C .
Derate above 25·C

Po

40
0.32

W/·C

TJ. Tstg

-55 to 150

. ·C

TL

300

·C

~--

-

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Adc

Watts

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse width.. 300,.s. Duty Cycl... 2%
(3) Repetitive rating: Pulse width limited, by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

168

N-CHANNEL
POWER MOSFETS

IRFP220122112221223
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Symbol' Type

BVoss

(Tc=25°C unless otherwise specified)
Test Conditions

Min Typ Max Units

IRFP220
200
IRFP222

-

-

V

VGs=OV

IRFP221
150
IRFP223

-

-

V

10= 250"A
Vos=VGS, ,lo=250,..A

VGS(th)

ALL

2.0

-

4.0

V

Gate-Source Leakage Forward

IGSS

ALL

nA

VGs=20V

IGSS

ALL

~100

nA

VGs=-20V

Zero Gate Voltage
Drain Current

loss

ALL

-

100

Gate-Source Leakage Reverse

-

250

"A

Vos=Max. Rating, VGs=OV

Gate Threshold Voltage

On-State Drain-Source
Current (2)

10(on)

-

10'00 "A

IRFP220
5.0
IRFP221

-

-

A

IRFP222
4.0
IRFP223

-

-

A

Vos>lo(on) X ROS(on) max., VGs=10V

IRFP220
IRFP221
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRFP222
IRFP223

-

0.4

0.8

0

-

0.8

1.2

0

Forward Transconductance (2)

1.3 2.8

-

0

g,.

ALL

Input Capacitance

Ciss

ALL

-

450 600

pF

Coss

ALL

150 300

pF

Reverse Transfer Capacitance

Crs•

ALL

. td(on)

ALL

Tr

ALL

td(Off)

ALL

-

-

100

ns

tl

ALL

-

-

60

ns

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

2.5 15

nC

Gate-Source Charge

Qg.

ALL

-

4.0

nC

Gate-Drain ("Miller") Charge

Qgd

ALL

-

8.5

-

KlW

Rise Time
Turn-Off Delay Time
Fall Time

I

VGs=10V,lo=2.5A

Output Capacitance

Turn-On Delay Time

Vos=Max. RatingXO.8, VGs=OV, Tc=125°C

50

80

PfO

-

40

ns

60

ns

Vos>lo(on)XRos(o~) max., 10=2.5A

VGs=OV, Vos=25V, f=1.0MHz

Voo=0.5BVoss, lo=2.5A, Zo=500
(MOSFET switching times are essentially
independent of operating temperature:)

VGs=10V, 10=6.0A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
RthJC

ALL

-

-

3.12

Case-to-Sink

RlIlcs

ALL

-

KlW Mounting surface flat, smooth, and greased

Junction-to-Ambient

RIt1JA

ALL

-

0.1

-

80

K/W Free Air Operation

Junction-to-Case

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width~300"s, Duty Cycle~2%
(3) Repetitive rating: F'ulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

.

169

N-CHANNEL
POWER: MOSFETS

IRFP220/221 1222/223

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Type Min Typ Max Units
Test Conditions
,
IRFP220
5.0
A
IRFP221
IRFP222
4.0
A Modified MOSFET symbol
IRFP223
showing the integral
IRFP220
20
A reverse P-N junction rectifier
IRFP221

-

-

-

-

IRFP222
IRFP223

-

-

16

A

IRFp220
IRFP221

-

-

2.0

V Tc;=25°C. Is=5.0A. VGs=OV

IRFP222
IRFP223

-

-

1.8

V

~

Tc=25°C. Is=4.0A. VGs=OV

Reverse Recovery Time
ALL
350 ns TJ=150°C. IF=5.0A. dIF/dt=100Al,..s
trr
Notes: (1) IJ=25°C to 150°C (2) Pulse test: Pulse width.;>300,..s. Duty Cycle';>2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
12

f"VGS:=10V
VGB -8V

10

8~Pu1seTest

~

.

w

I

:IE

5

!Zw

:IE

5

"z

oS

6

4

Tr125°l~

~

vGSJsv

Q

TJ

oS

I -

-25ock

TJ--55OC~

Q

/II
A 'I

Vas =45V

VGS=4V-

o

-

W
~
00
00
100
VDS. DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

1W

2
4
6
8
10
12
Vas. GATE-TO-5OURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10
SOj.lS Pulse Test

VGS=10V
V~~.Vl

jrr

a:
w

!Ii

5.

i

,,

/J

~

j

o

c8

l'

4

14

Typical Transfer Characteristics

.~ I-VGS'=7V

10

I

_C?ERATION IN THIS

AREA IS UMITED BY

Rosr"",

vGS-elsv
IAFP 220,1

i[
ffi

·1

..

vGS-ev

I;

IE
II!II:
z

'7/

kV

ii
w

B

-D

,

:::>

VGS 55V

4

II:

......

TJ'"'25°C
TJ =-55"C

W
II:
II:

I

:::>

VOS>~XRoaton!

TJ""125~

....z

VGS=6V

II:
II:

C

i[

..ffi

VGS=65V

ffi

"z

8

I

iii

.01. """ T)..

"

VGS =17V

10

f-~

IRF~

10

5
....
z

I

t-1RFP 220,1

r-I~P

II!II:

VGS-S.5V

,oa,.s

2j2'j

I

"z
C

II:
Q

oS

VGs -4.5V

1.0

'.

" '\

:::>

vGS=l-

-:'\.. ''''''-

'.

22t""i'

::E

:::::::: ::::1!L.c
=
=.~1~.~~=.

=

r 'i
,oms

SINGLE PULSE

11111
VGS~4V

.2
4
6
8
Vos. DRAIN-TO-SOURCE VOLT AGE {VO~TS)
Typical Sat~ratlon Characteristics

SAMSUNG SEMICONDUCTOR

10

0.1
1.0

1111111

p

'.3

1t

.

I

IRFP 220,

5
10 20
50
100 200
500
Vos. DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

170

N-CHANNEL
POWER MOSFETS

IRFP220122112221223
2
0

;

0=05

5

~ ~iiii
jII

IE

0-0.2

2

DLo\
.1
5

2

1-- ....

0-0.05

~~

0-002

~.

.IfL.JL
NOTES

~.--j

LE PULSE (mANSlENT
"""
THEA
SJNG MAl IMPEDANCE)

1 Duty Factor, 0=1;

I"'"

2 Per Umt Base=AIIIJC=3 12 Oeg C W •

~1'l~""'II')1

00 1
1

5

10-4

5

2

10-3

2

5

lO-z

2

10-1

5

2

1

5

I 11111

2

5

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum EHactive Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

103

65

5

V ....
V V V

-

TJ =-55 Q C

:-- T,.25 'e-::
1

Ir-

TJ=~25°C

.

r-=

=

TJ""2S'C

V.... r/

~

5~ ~

,

VOS>IDlon)X~""1

10
4
6
8
10. DRAIN CURRENT (AMPERES)

Typical Transconductance Vs. Drain

10

i

~61.05

./

i~

./

we

0::&

l

2

3

Typical Source-Drain Diode Forward Voltage

V

V

'b:::::: r--

0

V
V

V

./

/

.... V
./

j

0.85

0.75
-40

V

V

VGS=10V

ID -2 SA

0.5

0
40
80
120
TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

c8

T'~15.e

1

VSD, SOURCE·TC>ORAIN VOLTAGE (VOLTS)

Curr~nt

~
~

~c

2. 5

1.15

=>0 ' 95

r-f

o

1.25

~~ u.

TJ =150°C ..

P

o

0:0:

1.00'"

.....

81 'I'" r-

IJ!

V

SAMSUNG SEMICONDUCTOR

160

40

0

40
80
120
TJ, JUNCTION TEMPERATURE ('C)

160

Normalized On-Resistance Vs. Temperature

171

N-CHANNEL
POWER MOSFETS

IRFP220/221 1222/223
1000

25

Vm-O
t=1 MHz
CISS-Cgs+Cgd, Cds SHORTED
Crss'"'CgcI
Coes-Cda+ CgsCgtt

..
.."'~

~

I

800

i

!
~

600

40a

\
\
1\ ~
\

,

1\

\

~

20

0

15

>
u

.."'

c..

,

U

Ii
200

Coa+Cgd
fll;CdS+Cgd

Vos=40V
Voo=100V

Vos=160V

::>

!..

10

.......

-

~

Cass

>

Crss

10
20
30
40
Vas. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

50

~V

//.V

J

C

AV

~

JD ""6A

I

/
o

Typical Capacitance Vs. Drain to Source Voltage

4

8

12.

ag• TOTAL GATE CHARGE (nC)

16

20

,

Typical Gate Charge Vs. Gat.To-Source Voltag'e

2,5

l"'- I'-...
~

Rmrc..1 MEASURED WITH CURRENT
_ ~LBE OF 2.~ DURATION

4

~~~~rE~~ OF 2 b~

........

_PULSE IS MINIMAL)

5

~

.......

...............

i'..
too...

3
VQB=10V

"'..........

JRFP 220,1

'"r--...,',
I'..

IRFP 222,3'

/

/.. i,.....o" ' /
o

/

VGS -20V-

-

:
1

10
15
20
10. DRAIN CURRENT (AMPERES)

25

35

5

o
25

•

Typical On-Realstance Vs. Drain Current

40

~

60
75
100
125
TA. AMBIENT TEMPERATURE ('C)

~.

",
150

Maximum Drain Current Vs. Case Temperature

" "" ,
'\.

'\

"'\

5

0
5

"

I\.

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE ('C)

140

160

Power Vs. Temperature Derating Curve

ciS

SAMSUNG SEMICONDUCTOR

172

N-CHANNEL

IRFP230/231/232/233

POWER MOSFETS

FEATURES

•
•
•
•
•
•
•

Low RDS(on)
Improved Inductive ruggedness
Fast switching times
Rugged poIysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
• .ro-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VOl

RDSCon)

ID

IRFP230

200V

0.40

9.0A

IRFP231

150V

0.40

9.0A

IRFP232

200V

0.60

8.0A

IRFP233

150V

0.60

8.0A

II

MAXIMUM RATINGS
Characteristic

Symbol

IRFP230

IRFP231

IRFP232

IRFP233

Unit

Voss

200

150

200

150

Vdc

VOOR

200

150

200

150

Vdc

DraIn-Source Voltage (1)
Drain-Gate Voltage

(R~=1.0MO)

(1)

Gate-Source Voltage

±20

VGS

Vdc

Continuous Drain Current Tc=25·C

10

9.0

9.0

8.0

8.0

Adc

Continuous Drain Current Tc=100·C

10

6.0

6.0

5.0

5.0

Adc

Drain Current-Pulsed (3)

10M

36

36

32

32

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25·C
Derate above 25·C

Po

75
0.6

Watts

Operating and Storage
Junction Temperature Range

W/·C

f

TJ, Tstg

-55 to 150

·C

TL

300

·C

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse wldth..300,.s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

173

N-CHANNEt.

IRFP230/231J232J233

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

OraiJi-Source Breakdown
Voltage

Symbol

BVoss

Type

Min Typ

-

V

VGs=OV

IRFP231
1.50
IRFP233

-

V

10=.250"A

4.0

V

Vos=VGS, 10=250"A

100

nA

VGs=20V

-100

nA

VGs=-20V

IRFP230
9.0
IRFP231

-

-

A

IRFP232
B.O
IRFP233

-

-

A

-

0.25

0.4

0

-

0.4

0.6

0

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGss'

ALL

-

On-State Drain-Source
Current (2)

loss.

10ion)

ALL

IRFP230
IRFP231
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRFP232
IRFP233
ForWard Transconductance (2)
Input Capacitance

.

gfs
CjSS

ALL

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

Crss

ALL

Tum-On Delay Time

td(on)

ALL

t,

ALL

id(oH)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Orain)

Qg

ALL

Gate-Source Charge

Qge

~ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

-

Tum-Off Delay Time

"A Vos=Max. Rating, VGS=OV
1000 "A Vos=;Max. RatingX·O.B, VGS=OV, Tc=125°C

VGS=10V,lo=5.0A

3.0 4.6

. Fall TIme

250

Vos>IO(on)XROS(on) max., VGs=10V

ALL

Rise Time

Test Conditions

-

VGS(th)

Zero Gate Voltage
Drain Current

Max Units

IRFP230
200
IRFP232

Gate-Source Leakage Forward

Gate'Tl:1reshold Voltage

(Tc=25°C unless otherwise specified)

-

0

720 BOO

pF

250

450

pF

60

150

pF

30

ns

50

ns

-

50

ns

40

.ns

19

30

nC

50

-

nC

14

.j

Vos>IO(on)XROS(on) max., 10=5.0A

VGS=OV, Vos=25V, f=1.0MHz

Voo=0.5BVoss, 10=5.0A, lD\GnIXRDSlml""'"

vGS"ilV

J

2

Tr't25°C

T~=25°C

T~=-55O~

Vos=6V

20
40
60
80
100
V... DRAIN-TOoSOURCE VOLTAGE (VOLTS)

120

o

OPERATION IN THIS
AREAJIS uMiTEd

10'!!IDiiI.
5

............ VG8=9V

JIJ

J. V

f'.

VGS-6V

iii'

2

1_

10

lf7R~'fa'2,3
I
IRFP
'R~P

_

BY_~'

IRFP 230,1

J

~30,1
232,3

.u:",

".,.

,

~V

4

I

2

7.

Typical Transfer Characteristics

~ YJ,..,J
vGS-sv
A~ ...............-Vas,",,7V

6Of'8 Pulse Test

'/1/

1
2
3
4
5
6
Vos. GATE-TO-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

0

J

VI

1/'
... W

VGSJsv o

~

f'

Vas=5V

1-

v~~Jv

If
o

1

v...

2
3
4
DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8

SAMSUNG SEMICONDUCTOR

10

2

:~F~,~~'.3

rt

•RFP23
5
10
20
50 100
0
ouu
V... DRAIN-TO-SOURCE VOLTAGE (VOLTS)

11111111

0.1
5

Maximum Safe Operating Area

175

N-CHANNEL
POWER MOSFETS

IRFP230123112321233
2

-D~

~
2

.... 1:::: Ijiiiii""

Dc

NOTES

f-n#

1

--.

5

~

~

#

~.-J.

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

1. Duty Factor. D=~

-

2 Per Umt

..

--

Base";'R~=1

6'708g.

3. TJ_Tc=PDIOI Ztt..rc (t)

1
6.

10

5

~

10-,

2 .

5

-.

10

2

IIIIIIII

10-,

5

eIWt

I I IIIII
10

11. SQUARE WAVE PULSE DURATION (SECONQS)

Maximum Effective Transient Thermal Impedance Junction- tcK:ase Vs. Pulse Duration

10

10

lit

zw

.. .. '

~

!!

w

6

..
U
Z

V

·c

..... ~

~.

~

V" / ~ ~ +-

U

zi!:

..
U
Z

~

2

t

i--' I--

TJ =12S"C

~V
V
II.

0

l,...-

80j.1SPulse Test'-

1/1

Vos>!otOl\lXRDS!onJ ....

I
~

5t===

t==.

Ti"'25°C

TJ =150·C

2

1('.

0

0:

a
z
~w

5

2

~

1. 0

~0:

5

j

t===

I-

E1r150·C
TJ 2rC

2

o. 1
o

8
12
16
10. DRAIN CURRENT (AMPERES)

20

o

Typical Transcounductance Vs. Drain Current

~Q1.0 5

Ww
iIi~

wC

U:I!

g;

0.8 5

l

07 5

6

4

0

l...-

I
~
c

-

1.1 5

8u,>~00.9. \

3

2. 5

~

0:0: .

2

Typical Source-Drain Diode Forward Voltage

125

~
g

1

Veo, SOURCE·TQ-flRAIN VOLTAGE (VOLTS)

.....

./'

"".

",,"""

V

~

,l/

V
VI'
./

,/

....... /
VOIi; 10V
ID=5A

f-'"
(

40

0

40

80

120

160

n

.n

TJ, JUNCTION TEMPERATURE ("C)

"Breakdown Voltage Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

176

N-CHANNEL

IRFP230/231 1232/233
2000

POWER MOSFETS
25

v~=o

Clssf=~::~9d. Cd~ SHOJED
Crss=Cad

1600

Coss=Cds+ CgsCgd
Cgs+Cgd
:::oCds+Cgd

1

5

\

\

\
400

\

~::~~~v" ~V

160V IR:2~~

v",
C,",

\

I{
CO""

"

/

C,""

10

20

30

40

ID=12A

/

50

16

10

~

W
II:
Z

..........

.1

ROSIenl MEASURED WITH CURRENT""',

Iii
iii

-.. r--....

vJ~10V

08

"cZ

PULSE OF 2 OJ'S DU.RATIO~

I

INmAL T,~25'C

I

r--....

.......

0.6 r-- (HEATiNG EFFECT OF 2 OilS PULSE
IS MINIMAL)

........

"'"'-

W·

J

II:

::>

04

/
..,.;'

C
II:

.......

,

0.2

II

~P230.1

'IRFP 2 3 2 '

-

~

"'\

~
VGS=20V -

~

'"

40

,,

0

"
~

32

Typical Gate Charge Vs. Gate-To-Sour/ie Voltage

10

Ii)
:E
X
W

24

Qg. TOTAL GATE CHARClE (nC)

Vos. DRAIN-TIOlon)XROSlon) max.• VGS= 1 OV

-

0.13 0.1.8

0

-

0.20 0.22

0

VGS=10V.10=10A

gt.

ALL

6.0

Input Capacitance

CISS

ALL

Output Capacitance

Co••

ALL

Reverse Transfer Capacitance

Cr••

ALL

Idlon)

ALL

Tr

ALL

9.5

-

(J

Vos>IO(on)XROS(on) ",ax.• 10':' 1 OA

tdloff)

ALL

tt

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Og

ALL

-

Gate-Source Charge

Qg.

ALL

'-

9

Gate-Drain ("Miller") Charge

Ogd

ALL

-

35

-

RlhJc

ALL

1.0

K/W

RthCS

0.1

-

K/W Mounting· surface flat. smooth. and greased

. RIhJA

ALL

-

-

ALL

-

80

K/W Free Air Operation

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

1200 1600

pF

360

750

pF VGs=OV. Vos=25V. f=1.0MHz

130

300

pF

30

ns

60

ns

!30

ns

60

ns

44

60

nC
nC

-

Voo=0.5BVoss. lo=10A. Zo=4.70
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. 10=22A. Vos=0.8 Max. Rating
(Gate charge is essentially independel)t of
operating temperature.)

nC

THERMAL RESISTANCE
.Junction-to-Case
Case-to-Sink
Junction-to-Ambient

Notes: (1) TJ=25°C to 150°C
(2). Pulse test: Pulse width';;300,..s. Duty Cycle';;2%
(3) Repetitive rating: Puise width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

179

N-CHANNEL
MOSFETS

IRFP240124112421243

POW~R

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

-

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Bod~ Diode) (3)

ISM

Diode Forward Voltage (2)

Type Min Typ
iRFP240
iRFP241
IRFP242
IRFP243

VSD

Max Units
18

A

test Conditions

-

-

16

A

IRFP240
IRFP241
"IRFP242
IRFP243

72

A

-

-

64

A

IRFP240
IRFP241

-

2.0

V

Tc=25°Q, Is=18A, VGs=OV

IRFP242
IRFP243

-

1.9

V

Tc=25°C, Is=16A, VGs=OV

-

Modified MOSFET symbol"
showing the integral
reverse P-N" junction rectifier

~

"I,

-

Reverse Recovery Time
ALL
- 650
trr
ns TJ=150°C, IF=18A, d1F/dt=100A/IlS
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse widthE;300IlS, Duty CycleE;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
8

40
Vas 10'1

Voi.~9V_

l'

0

8LpLt-

32

vos.J7V -

-yos>lotonjxAostOlll .....

i[

A

II:
W

...:Ii

J

4

..

~

z

f--

"

~

::>

-

.

u

I

,

.e'"

I

8

II- _TJ=-;SOc
_TJ=12~OC

.

20

0

40

0

5u

Vos, DRAIN-TO-SOURCE 'VOLTAGE (VOLTS)

o

2
4
6
6
'0
12
Vos, GATE-TD-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10

IRFP 240,1

I

32

6

8

;
o

~

~

/ ~
V.R

:,...-

2

I

~~~~~~~~

I'
V",,~5v

v",=Jv
1
2
3
4
Yos, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

SAMSUNG'SEMICONDUcrOR

,!'

"

'"""

~ 'I"""
'ms

-BV~anj--'

2

v",,-.v-

~IRFP240,1,
IRFP242,

v"'~jV

Tvpical Saturation Characteristics

qs

IRFP 242,3

:~
k::
~ ~I=
..-~

14

Typical Transfer Characteristics

40

JO/AS puLe Testl

TJ=25°C

A~

VGS=4V

10

-

J

8

VGS 5V

o

TJ =25°C
T~=-55°C·

,I

16

~
II:

vGS-ev

~Tr'25'C

I
I

24

II:

6

~

l.o... "..,JTOS'

Vos-8v

2

~j-

f-f--

.'

II

10ms

=-CTJJlI

~ TJ 150"C MAX
_
AIIIJC ,",10K/W'
5-StlOll(E"""PllI:SC

"

'!-.
I ,JO.L
DC

I
o. 1
1.0

1111·
2

l"lil2t(3 IRI" 12jori

5
10
20
50
100 200
500
Vo$, DRAIN-TD-50URCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

180

N-CHANNEL
POWER MOSFETS

IRFP240124112421243
2

-o~o

i"'"
2

..... ~ Iiiji""

0':0

-010

NOTES

IrUL

-.
-

1

o~

5

p.---j

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

1 Duty Factor D""...!!..
t•.
2. Per Unit Base""Rt. JC IC 1.0 Deg
3. TJ~Tc=PONZII\JC (t)

2

-.

1

I I I11111 11 LLLU

-.

5
10-,
2
5
102
5
10
11. SQUARE WAVE PULSE DURATION (SECONDS)

10

erw

10

Maximum Effective Transient Thermal Impedance Junctlo.... to-Case Vs. Pulse Duration

a

10 3
5

II

6
2
TJ =-55°C

~

2

V

4

TJ''''25°C

TJ "'125°C

A

a
80IAS Pulse

T~~I

"rt.oor"""~

5

- r--

r--

t-TJ=1~O°C

11"T~25'C

2

a
a

8

16
24
2
10, DRAIN CURRENT (AMPERES)

1=

II

2

IV l.,...--'
'IV

Tr150·C

5

I

V V .......
,.....I-

8

,

T!S2..d_

I--r""

40

0.4

rd

I

0.8

1.2

1.6

20

2.4

Voo, SOURCE-To-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

12 5

2. 5

w

~

w

<>

1.1 5

--

z

~

~S1.0 5

.,/

Ww

a:N
OI::J

wC

<>:E

a: a:

S~ 0.95 /

./

V

V

Z
C

i

i--"

V

a:

~s
~~

a:::J

L

"5

::>:1

V

...Z~l!S~

6-

./

1. a

/'

:ca:

~

:cg§

2. a

c

I

0.85

o. 5

/'

./

V

V
VGS =10
ID =10A

a:

o .

0.7 5

40

a

40

80

120

T" JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

160

-40

a

40
80
120
T" JUNCTION TEMPERATURE (OC)

160

Normalized On-Reslstance Vs. Temperature

181

N-CHANNEL

IRFP240/241 1242/243
200

\

cl~~:+~d, bds SJORTEOI

0\
120

\

400

\

--

Coss=Cds+ CgsCgd

I'

800

0

Crss=Cgd

\

~,

U~ci

5

vJ

01\
160o

POWER MOSFETS

~

Cgs+Cgd

~s+Cgd

Vos=40V

c.ss

5r----

I\..

D,

..........

~

i'.

-

Coos
CBs

I

10
20
30
40
YDS. DRAIN-TO-SDURCE YOLTAGE (YOLTS)

05

2A

---

~

~

ag• TOTAL GAT!; CHARGE (nC)

~

2

"...... i"...

i'-

........
........

20

N:FP240.1

IRFP242~
I

......... v \",-21"

0./

"'~,~

Ros.CI'IJ MEASURED WITH CURRENT
PULSE OF 2 O"s DURAllON
INITIAL'TJ -25'GC

40

60

80

100

r--....

i'...

,

~

~~~~~~ ~:~~~)i 2 O"s

o

r----

...........

...........

VGS=10V

./

r Im

16

=- .....

~

!ypical Gate C/large ~s. Gate-To:.Source Voltage

20

2

~

/
I

50

Typlcal.Capacltance Va. Drain to Source Voltage

1

-v",~100~~

VD6=160V IRFP240,2

100

10. DRAIN CURRENT (AMPERES)

0
25

50

75

100.

125

150

TA. AMBIENT T!;MPERATURE (OC)

Typical On-Resistance .vs. Drain Current,

Maximum Drain Current Va. Case Temperature

160
140

iii 12 0

i

,

f-- ""-'

100

I

0
60

r'\.

,

"

"'

40

0

o

20

~

"'r'\.

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

"
140

160

Power Vs. Temperature Derating Curve

=8

SAMSUNG SEMICONDUcrOR

.

.

182

N-CHANNEL
POWER MOSFETS·

IRFP250/251 1252/253
FEATURES
I

•
•
•
•
•
•
•
•

.

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

Vos

ROS(onl

10

IRFP250

200V

0.0850

30A

IRFP251

150V

0.0850

30A

IRFP252

200V

0.120

25A

IRFP253

150V

0.120

25A

II

MAXIMUM RATINGS
Characterlatlc

Symbol

IRFP250

Voss

200

150

200

150

Orain-Source Voltage (1)
Drain-Gate Voltage (RGS= 1.0MO) (1)

VOGA

Gate-Source Voltage

VGS

IRFP253

Unn

200

150

Vdc

200

150

Vdc

IRFP251 . IRFP252

±20

Vdc

Continuous Drain Current Tc=25·C

10

30

30

25

25

Adc

Continuous Drain Current Te=100·C

16

16

Ade

100

100

10

19

19

Drain Current-Pulsed (3)

10M

120

120

Gate Current-Pulsed

IGM

±1.5

Adc

TQtaJ Power Dissipation @ Tc=25·C
Derate. above 25·C

Po

150
1.2

Watts
W,·C

TJ, Tstg

-55 to 150

·C

TL

3{)0

·C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp: for Soldering
Purposes, 1/8" from case for 5 seconds

Ade

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300,.s, Duty Cycl8<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

183

N-CHANNEL

IRFP250/251 1252/253

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

IRFP251
150
IRFP253

-

-100

IRFP250
30
.IRFP251

-

250

IRFP252
25
IRFP253

-

VGS(th)

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

On-State Drain-Source
,Current (2)

loss

10(on)

ALL

IRFP250
IRFP251
Static Drain-Source' On-State
ROS(on)
Resistance (2)
IRFP252
IRFP253

-

Test Conditions

Max Units

IRFP250
200
IRFP252

Gate-Source Leakage Forward

,Zero Gate Vciltage
Drain Current

(Tc=25°C unless otherwise specified)

~

V

VGS=OV

-

V

10= 250",A

4.0

V

Vos=VGs. 10=2501'A

100

nA VGS=20V
nA VGs=-20V
,..A Vos=Max. Rating. VGs=OV

1000 ,..A Vos=Max. RatingxO.B. VGs=OV. Tc=125°C

-

A

-

A

Vos>lo(on)XROS(on) max .• VGS= 1 OV

-

0.07 0.OB5

()

-

0.09 0.120

()

VGS=10V. lo~16A

!J

gt.

ALL

Input Capacitance'

CiSS

ALL

....: 2640 3000

pF

Output Capacitance

COSS

ALL

pF VGs=OV. Vos=25V. f=1.0MHz

Crss

ALL

300

500

pF

td(on)

ALL

35

ns

t,

ALL

-

BOO 1200

Reverse Transfer CaPBIO(on) x ROS(on) max .• 10= 16A

Voo=0.5BVoss. 10=2.5A. Zo=15 0
(MOSFET switching times are essentially
independent of operating temperature)

VGS=10V. lo=38A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature,)

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

0.1

-

0.83 K/W

-

K/W Mounting surface flat. smooth. and greased

BO' K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300l's. Duty Cycle.;;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAIII!SU.NG SEMICONDUCTOR

184

N-CHANNEL
POWER MOSFETS

IRFP250125112521253

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol

Characteristic
Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Min Typ

Max Units

Test Conditions

-

-

30

A

IRFP252
IRFP253

-

-

25

A

IRFP250
IRFP251
IRFP252
IRFP253

-

-

120

A

-

-

100

A

IRFP250'
IRFP251

-

-

2.0

V

Tc=25°C. Is=30A. VGs=OV

IRFP252
IRFP253

-

-

1.8

V

Tc=25°C. Is=25A. VGs=OV

-

ns

TJ=150°C.1F=30A. dIF/dt=100Al,..s

trr .

Reverse Recovery Time
Not~s:

Type
IRFP250
IRFP251

ALL

750

~1

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

(1) TJ=25°C to 150°C (2) Pulse test: Pulse width';;300,..s. Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
0

0

5

r~~VGS-9V
Ves-BV

~PulseTest

TJL25~C
t:::: fJi.
TJ-25°C-

aoj.iS puiseTest

:f

Vos>lo...,IXRDS(DI'II mo.

TJ=-55°C

0

vos.ITV

I-'U

II

j
0

11

5

a

Vos 611

r

b-

I
0
0

VGS-~V

TJ=125 C
Q

~~::~~~C "
5

0

j
lIos 411

10

20

30

40

50

60

VDS. DRAIN-To-5OURCE VOlTAGE (VOLTS)

Typical Output Characteristics

a

.J... Pu'!'

VGS -1011

6

2

..,jj

,.
,

8

1
2
3
4
5
6
VOS. GATE-T0-50URCE VOLTAGE (VOLTS)

Typical Transfer Characteristics

v~rv-

vos<=5l

I--"

V ......

~/

I~V

~

4

o

!~

0

Ves 711

v~=.v--l-.v.H7'

Tost

VI

~V

Yes 3511

o

h

Ft/)

Vas==4V

~
0.4
08
1.2
1.6
Vos. DRAIN-T0-50URCE VOLTAGE (VOLTS)

2.0

Typical Saturation Characteristics

c8

SAMSUNG SEMICONDUCTOR

185

N-CHANNEL
POWER MOSFETS

/

IRFP250/251 1252/253

..
Z

IU

asZ

~C

1.0

.. Z

IU'"

~~
1Ul!l
~Z
~~

0-0.5

0.5

,.....

0-

~!

0-0.2

0.2
0-0

o. 1

IE ...

"C

..

1
~

Do. .0

o~n

~I 0.05
si~
~

0"0.01

·0.02
0.0 1
10-'

10'"'"

5

10-3

2

5

10 '

2

5

10-1

10

'11,. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

103

20

~I"'"

=t"J--!5°C

/"

I.V

w:

8

V-

TJ ...

,t.

-

5

~
V V

6

2

.~

C

..... ~~

jV

TJ"'25°C

, TJ -l50°C

J.V

Vos>lot:onIX~ ....

ao,..s Pulse Test

4

,

·11

TJ =150"C

.·'1

j..-T'i 2
1.0

o

10

20

30

40

ID. DRAIN CURRENT (AMPERES)

50

o

1

•

2

3

VSD. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Typical Transconductance VI. Drain Current

Typical Source-Drain Diode Forward Voltage

5

2. 5
IU

~

5

5

5,.",

..,. ,;'"
/

i"

t,....- ~.

.....
I.---'"

V

2. 0

~ia
l!lN
,,:::J

1. 5

"'i
~"~
z

.

,.0

J

o. 5

~

5

'0.75
-40

o

40

80

120

T J. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

160'--

II

V

V

LV

.......

.,/

r"'"

"V

'o·'r-

VGS""'10V

r--

o
-40

0

40

80

120

160

TJ; JUNCTION TEMPERATURE ('C)

Normalized On-Reslstance Va. Temperature

186

N-CHANNEL
POWER MOSFETS

IRFP250125112521253
4000

l\

3200

\

\\

=c

1600

v:o:~~~~~

V!ls~160V, lRFP250. 2,\

"::>
II:

0

~

CgS+Cgd

IIICds+Cgd

10

/1/

C

"" r-

ID-38A

C>ss

"""-

10

"~,;;

CoN

I

20

30

40

/

o

50

~

AV

I-

~

800

51--

w

Coss-Cds+~

\ \

"

oj

~
...g.

VGS=O
t ... 1 MHz
CISS=Cgs+Cgd, Cds SHORTED
Crss=Cgd
~

\~

20

w

c,..

iw 240o 1\

I

I

28

56

84

112

140

V... DRAIN-TCl-SOURCE VOLTAGE (VOLTS,

D.. TOTAL GATE CHARGE (net

Typical Capacitance Vs. Drain to Source VoHage

Typical Gate Charge Vs. Gate-To-Source Voltage

30

..............
w 0.22

I

CURRENT

pulse OF

2.0.-

.oURA~ IN~AL TJ ':"25°C
~

(HEAnNG _ EFFECT

0.18

OF 2.~ PULSE IS

z

o

...........

iii

RtlSIon! MEASURED WITH

w

II:

...:E

r--......

r--.... .........

........

W

~

18

..::

I-

zW

'MINIMAL)

I

~

2.

VGS -l0V

II:
II:

I"-

~P2501

IRFP262,3 "'-

::>

"z

4

12

C

I'-'

II:
C

i!'l "

J

0.10

I

j
0.06. 0

30

/

60

I-V ""=2OV
I
90

1~0

120

I•• DRAIN CURRENT (AMPERES,

140

iii 120

;_c

-

"

~

~

,~

.9

,

'\
o
25

50

75

100

125

150

TA. AMBIENT TEMPERATURE ('C,

Typical On-Resistance Vs. Drain Current

160

II

~.

Maximum Drain Current Vs. Case Temperature

~

"\

100

'\

80

~.

0

~

4

r\.

0

\.
20

40

60

80

100

120

140

160

TA. AMBIENT TEMPERATURE ('C,

Power Vs. Temperature Deratina Curve

c8SAMSUNG SEMICONDUCTOR

187

N-CHANNEL
POWER MOSFETS

IRFP320132113221323
FEATURES
•
•
•
•
•
•
•

Low ROS(on)
Improved .inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
• TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

vos

ROS(on)

10

IRFP320

400V

LBO

3.0A

IRFP321 .

350V

1.BO

3.0A

IRFP322

~OOV

2.50

2.5A

IRFP323

350V

2.50

2.5A

MAXIMUM RATINGS

r,

Chal1lcterlatlc

Symbol

IRFP320

IRFP321

IRFP322

IRFP323

Unit

Draih-Source Voltage (1 )

VDSS

400

350

400

350

Vdc

Draih-Gate Voltage (Ros-1.0MO)(1)

VOGR

400

350

400

350

Vdc

Gate-Source Voltage

Vas

Continuous Drain Current Tc=25·C .
Continuous Drain Current Tc-l 00· C

Vdc

±20

10

3.0

3.0

2.5

2.5

Adc

10

2:0

2.0

1.5

1.5

Adc

Drain Current-Pulsed (3)

10M

12

12

10

10

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Po

40
0.32

Watts
W/DC

TJ. Tstg

-55 to 150

·C

TL

300

·C

Total Power Dissipation @ Tc-25·C
Derate above 25·C
Operating and Storage
JUnction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1IBn from cssefor 5 s!lCOnds

Notes: (1) T.r=25·C to 150·C
(2) Pulse test: Pulse wldth<300flS. Duty Cycl.... 2%
(3) Repet~ve rating: Pulse width limited by max. junction temperature

c8SAMSUNG

SEMICONDUcro~

N-CHANNEL

IRFP320/321 1322/323

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold ~oltage

Symbol

BVoss

Type

ALL
ALL

Gate-Source Leakage Reverse

IGss

ALL

Zero Gate Voltage
Drain Current

loss

ALL

Static Drain-Source On-State
ReSistance (2)

10(on)

RDS(on)

IRFP320
IRFP321

Max Units

-

V

VGs=OV

2.0 - - - - 3.0 -

-

V

lo=2S0",A
Vos=VGS, 10=250",A

4.0

V

100

nA

VGs=20V

-100

nA

VGs=-20V

250

",A

Vos=Max. Rating, VGs=OV

1000

",A

Vos=Max. RatingXO.8, VGS=OV, Tc=12SoC

-

A
Vos>IO(on)XROS(on) max., VGs= 1OV

IRFP322
2.S
IRFP323

-

-

A

IRFP320
IRFP321

-

1.4

1.8

0

IRFP322
IRFP323

-

1.7

2.S

0

VGs=10V,10=1.SA

-

Forward Transconductance (2)

91.

ALL

1.0 2.2

Input Capacitance

Cis.

ALL

400 600

pF

U

tf

ALL

-

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

-

12.S

1S

nC

Gate-Source Charge

Qg.

ALL

-

2.8

nC

Gate-Drain ("Miller") Charge

Qgd

ALL

-

9.7

-

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

Id(on)

ALL

tr

ALL

Id(off)

ALL

Rise Time
Turn-Off Delay Time
Fall Time

Test Conditions

-

IRFP321
3S0
IRFP323

IGSS

On-State Drain-Source
Current (2)

Min Typ

IRFP320
400
IRFP322

VGS(th)

Gate-Source Leakage Forward

(Tc=2S0C unless otherwise specified)

90

200

pF

30

40

pF

-

40

ns

50

ns

100

ns

SO

ns

Vos>lo(on)XROS(on) max., 10=1.SA

VGs=OV, Vos=2SV, f= 1.0MHz

Voo=O.SBVoss, 10=1.SA, Zo=SOO,
(MOSFET switching times are essentially
independent of operating temperature.)

VGs= 1OV, 10=4.0A, Vos=O.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
RthJC

ALL

-

-

3.12

Case-to-Sink

Rthcs

ALL

-

KIW Mounting surface flat, smooth, and greased

Junction-to-Ambient

RthJA

ALL

-

0.1

-

30

K/W Free Air Operation

Junction-to-Case

K/W

Notes: (1) TJ=2SoC to 1S0°C
(2) Pulse test: Pulse width"300",s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

SAMSUNG SEMICONDUCTOR

189

N-CHANNEL
POWER MOSFETS .

IRFP320132113221323
(£CCZU,

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
SymbOl

CharacteristiC
Continuous Source Current
(Body Diode)

Is

Type

-

3.. 0

A

IRFP322
IRFP323

- - 2.5
- 12
- 10
- - 1.6
- - 1.5
- 450 -

A

IRFP320
Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward VOltage (2)

VSD

IRFP~21

'Rf.P~l!l:l
1r;l~fJ3?~

IRf.f.l13!!P

Reverse Recovery Time

I"'FliI~21

IRFP322
IRFP323
ALL

trr

Test Conditions

Min Typ Max Units

IRFP320
IRFP321

-

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

A

l~

A
V

Tc=25·C. Is=3.0A. VGs=OV

V

Tc=25·C. Is=2.5A. VGs=OV

ns

TJ=150·C. IF=3.oA •. dlF/dt=l OdA/fAs

Notes: (1) TJ=25·C to 150·C (2) Pulse test: Pulse width .. 300fAs. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

-~lWseTJ

P;~GS"'10V

r- Vas=6V

-

8ClJIsPuIse Test

.,

I
I
I
IIr

Vos>ID!onjXAoslonl max

Vos""55V

~

i

~

!ZOJ

Vo.s-5V


U

VGSz~

~.


!

IRFP 320,1

I
1.0

-"'TJ(

1mo
~

L..--..J Tc""25°C

0.1

4

B

12

16

'X .

~;J-150°C M

VGS=4V

If

c8

.,

-IRfP320,1

VGS=45V

I~

o

=~Ff:.g;

V -5V-

'b

J

R

vGS"",J 6V

10

l

~

Typical Transfer Characteristics

~

j

3

I

'1/

1
2
3
4
5
6
Vos. GATE-TQ.SOURCE VOLTAGE (VOLTS)

Vos. DRAIN-TQ.SOURCE VOLTAGE (VOLTS)

Ba!. P....! Test

A

':f/)

20

111nrr+---t-+++:l:<=~:+pB:~c:c~-c-:~_"'I~~"~

1.0

2

. 5

10

20

50

100

200

500

VDs,DRAIN-TQ.SOURCE VOLTAGE (VOLTS)

Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum Safe Operating Area

SAMSUNG SEMICONQUCTOR

190

N-CHANNEL
POWER MOSFETS

IRFP320132113221323

0"05

~

0-02

DLo.\
1

.... ""

0=005

o

IiiJ

~

I-""

NOTES

~

Ir1SL
~.~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

0.02

0""0.01
1

~

Duty Factor, D=-i;-

2 Per Unit Base=Rt..Jc=3 12 DeQ C.W
3 TJr.rTc=PDfllZuvc (I)

1

"'

10"'

j J 111111

10"'

5

2

5

10-

2

5

10"'

~~ j j i l l
10

11. SQUARE WAVE PULSE DURATION (SECONDSI

Maximum Effective Transient Thermal Impedance Junctlon- to-Case Vs. Pulse Duration

5

10

'"'~~I:~~R:S~ 1-

J55'~ ~

4

I
w

U

[..;.p

. . .V

3

I

/

J/
1// V

2

IJ V
'11//

V

0

-

5

-

TJ ..J125 0 C

+-

10-

2

5
TJ",,150°C

r
o

J

2
3
4
10, DRAIN CURRENT (AMPERES)

1.1 5

~

V'"

~S' 1.05

i~
we

8~ 0.95 /

:g-

./

""

k'" !--"

5

V

.."..""

./V

........

o

40
80
120
TJ, JUNCTION TEMPERATURE (OC)
V~.

Temperature

SAMSUNG SIEMICONDUCTOR

160

V"

/'

....... /
VGS=10V

~-'r-

5

Breakdown Voltage

c8

4

./

0.85

0.7 5
-40

2

0

~

~

1

VSD. SOURCE-TD-DRAIN VOLTAGE (VOLTS)

Typical Source-Drain Diode FClrward Voltage

2. 5

z

UlE

T,2r C

o. 1
o

1.25

0:0:

IL ~ ~150OC

0

Typical Transconductance Vs. Drain Current

~

II

TJ -25°C

2

.T'~ ~ I j..'

V

5

~

o
-40

0

40
80
120
TJ, JUNCTION TEMPERATURE (OC)

160

Normalized On-Resistance Vs. Temperature

191

N-CHANNEL

POWER. MOSEETS;:··.

IRFP3201321f3221323
1000

vasJo

I 20·~-+--+--+--+--+--+--+~+--+~

~:'i:.+Cgd'l Cds "\""",,0
600

eoas-Cds+CgaCgd

Cgs+Cgd

~~

aiCda+

i

~ 60

o \

~

5

§

15 ,.

CI8s

400

U

1\

200

If

\' .........

....

'j

COOS

If

<>aa

o

10

20

30

40

50

Vos. DRAINoTMOURCE VOLTAGE (VOLTS)

o

Typical Capacitance Va. Drain to Source Voltage

Ie
..;."

i

4

JV

...... ........

--

~V

2

~ P"

~~;';''''''DURATION.....nw..
T~-25·C

IHEATlNO EFFECT~T
jLl£jMINj

1

J

6
9
12
10, DRAIN CURRENT (AMPERES)

15

Typical On-Reslatance VI. Drain Current

40
35
..

o.
5

5

o

20

, ::-....
:.-.

~\\

.,

·0
25

..

50
75
100
125
TA. AMBIENT TEMPERATUREJ'CI "

"
150

:

,'.

1,\

~

5

IRfP~ ........ r--....

)

'\

'\

i

1

....

"""""- ........ r-.... "RFP320,1

Maximum Drain Current '!I.. Case Temperature

"
",
~

20

4

I. V

,

TOTA~ GATE c~IIiaE ·(n~ 16

V..-2OV

Vi

3

~

I

/
1/

vL-1J

4 Q ..

Typical ~te Charge Vs. G~~To-Sourcel'OI~g.

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OCI

~

140

. Power VI. Temperature Derating Curve

c8SAMSUNG SEMICONDUCTOR

180

'

N-CHANNEL
POWER MOSFETS

IRFP330133113321333
FEATURES
..
•
•
•
•
•.
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysiUcon gate cell structure
Low, input capacitance
Extended safe operating area .
Improved high temperature reliability
T0-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

ROS(on)

10

IRFP330

400V

1.00

5.5A

IRFP331

350V

1.00

5.5A

IRFP332

400V

1.50

4.5A

IRFP333

350V

1.50

4.5A

G~
. S

MAXIMUM RATINOS
Characteristic

Symbol

IRFP330

IRFP331

IRFP332

IRFP333

Unit

Drain-Source Voltage (1)

VDSS

400

350

400

350

Vdc

Drain-Gate Voltage (Ros=1.0MO) (1)

VOOR

400

350

400

350

Vdc

Gate-Source Voltage

VGS

Adc

Continuous Drain Current Tc=25°C

±20

Vdc

10

5.5

5.5

4.5

4.5

10

3.5

3.5

3.0

3.0

Adc

Drain Current-Pulsed (3)

.IDM

22

22

18

18

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

75
0.6

wloe

TJ, Tstg

-55 to 150

°C

TL

300

°C

Continuous Drain Current Tc=1 00 ° C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Watts

Not..: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300jAs, Duty Cyc~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNO SEMICONDUCTOR

193

N-CHANNEL

IRFP330/331 1332/333

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min .Typ Max Units

-

-

V

VGs=OV

IRFP331
350
IRFP333

-

V

10=250,..A

4.0

V

-100

IRFP330
5.5
IRFP331

-

-

A

IRFP332
4.5
IRFP333

-

-

A

VGS(th)

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSs

ALL

-

On-State Drain-Source
Current (2)

Static Drain-Source On-State
Resistance (2)

loss

10(on)

ROS(on)

ALL

Vos=Max. RatingXO.B. VGs=OV. Tc=125°C

Vos>lo(on)XROS(on) max .• VGS= 1OV

0

IRFP332
.IRFP333

-

1.0

1.5

0

ALL
ALL

Output Capacitance

Coas

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

Id(on)

ALL

tr

ALL

td(Off)

ALL

tl

ALL

Qg

ALL

Gate-Source Charge

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Fall Time

1000 ,..A

1.0

gl.

VGs=-20V
Vos=Max. Rating; VGs=OV

O.B

CiSS

Total Gate Charge
(Gate-Source Plus Gate-Drain)

nA

Vos=VGs. 10=250,..A
VGs=20V

250 I ,..A

-

Forward Transconductance (2)

Turn-Off Delay Time

100 I nA

IRFP330
IRFP331

Input Capacitance

Rise Time

Test Conditions

IRFP330
400
IRFP332

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless othelWise specified)

,

VGs=10V.10=3.0A

- 730 BOO
- 100 300
- 50 BO
- - 30
- - 35
- - 55
- - 35
- 1B 30
- 4.0 - 14 -

3.0 4.4

0

VoS>IO(on)XROS(on) max .• 10=3.0A

pF
pF

VGs=OV. Vos=25Y. f=1.0MHz

pF
ns
ns
ns

o.

Voo=O.5BVoss. 10=3.0A. Zo= 15
(MOSFET switching times are essentially
independent of operating temperature.)

ns
nC
nC

VGs=1QV. 10=7.0A. Vos=O.B Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to:Ambient

RthJA

ALL

- - 1.67
- 0.1 - - BO

K/W

KIW

Mounting surface flat. smooth. and greased

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300,..s. Duty Cycle';;2%
.
(3) Repetitive rating: Pulse width limited by max: junction temperature

. c8SAMSUNG SEMICONDUCTOR

194

N-CHANNEL
POWER MOSFETS

IRFP330/331 1332/333

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)
..-

Type

Is
----_.

Pulse Source Current
(Body Diode) (3)

ISM
--

---

Diode Forward Voltage (2)
--

------

Reverse Recovery Time

-

-

5.5

A

IRFP332
IRFP333

-

-

4.5

A

IRFP330
IRFP331

-

~

IRFP332
IRFP333

- _._- 18
f--. ---

IRFP330
IRFP331
-_._----

-

"----

-

IRFP332
IRFP333
-_._--

---

-

ALL

trr

22

-

1.6

----

_.""--

-

1.5

---- f----

600

Test Conditions

Modified MOSFET symbol

-- --- showing ttie integral
--

1--.----

VSD

--_ ..

Min Typ Max Units

IRFP330
IRFP331

-

reverse P-N junction rectifier

A

Q[J

--

A
-_.-

-.-

-~---------------

V

Tc=25°C, Is=5.5A, VGs=OV

V

Tc=25°C, Is=4.5A, VGs=OV

--~-.---.-

--_.-

ns

~

-.- ------_.. "---_._- - - - - - - - - - - -

ITJ= 150°C, IF=5.5A, dlF/dt= 1 OOA/,..s

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width";300,..s, Duty Cycle";2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
12

~

10

V -BV

J

8014$ Pulse Test

Ii

~;I:::~R:::, J

10 .}

II
I

TJ -125"C

I

TJ =25"C

I

TJ=-55"C

VGs=4V

50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

300

1

BOIol~ Pulse Tesl

VVi~6V

/.~ ~5V

~

6

/

,......
L.
~

~

1

4

5

6

102
OPERATION IN THIS

·5

AREA IS UMITED

2r:.1~~~

'ri"l}

0

BY RIlS\OI»

=-~

,,

r-1RFP 330,1
5

vGS=L

IAFP 332,3

I

IY

'fl
h 'I

Typical Transfer Characteristics ,

VGS1~

B

3

1/1

• VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10

2

~J

2

I

1/'

,/

'o,.s

,,

11
'ji

Voo"'45V

5~

I'
/
I;""

I

I--

Vas 4V

2
4
VDS, DRAIN-To-BOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8

I--

SAMSUNG SEMICONDUCTOR

10

o· 1

2.0

1Oms

Te 25"C
TJ 150°C MAX
Rt.Jc=1 67 KfW

SiNillim

IRFP"331,3=;
IRFP 330',2

'tom

5.0
10
20
50
100 200 500
VOS, DRAIN-To-BOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

195

N-CHANNEL
paW~RMOSFfTS.

··IRFP330/331/332t333

;

( '

0-0.6'

5

r-:: !!::~Pii

0=0.2

2

01 0 .1

i""'"

.... 1-"1"""

OJO~J5

1

"

NOTES

~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

0"'0.02

5 0-0.01

~-t~

i-'i"'"

1. Duly Factor.

2

o-l!..

t,.

2: Per Unit a,.-At.Jc-1.87 Deg. CIW.
3. T...Tc·PDMlt.Jc It).

0.0 1
10'

10

~

2

I I I IIII r '. I I I I I II

5
10-,
2
5
10"'
2
5
1011. SQUARE WAVE PULSE DURATION (SECONDS)

2

5

5

10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

10
BOJd

Pulse

Test,l

Vos>l~O/IIxRos.on)_

8

TJ --S5°C

V

V. . . . V

---

T,-25-C'.

;....

TJ -125°C

VI Vr'

I

J~

If
0

2

10

4
6
8
10, DRi\IN CURREN!" (AMPERES)

~10

1

2

3

Vso. SQURCE-To-DRAIN VOLTAGE (VOLTS)

Typical Tra~scounductance Va. Drain Current

Typical SoUrce-Oraln Diode Forward Voltage

1.25

2.5
,

5

V

~

/

5

V

.... V .....

V
~

V
./"

;,

....... /

"

./

.

-

5
Vos-1OV

1o=3A

0.75

-40

.

0
40
I!O
120
T~ JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

c8,SAMSUNG SEMICONDUCTOR

160

a
-40

,
a

40

80

120

180

T,. JUNCTION TEMPEl\ATUIlE (OC)
NormaliZed On-Reeletanca Va. Temperature

. 196

. N-CHANNEL.
POWER MOSFETS

I~FP330/331/.332/333
5

2000

v~-o
f-1

1600

MHz

c.u-Cgd

ii

0

CIss-Cgs+Cgd, Cds SHOAlED

J-'

Coas-Cds+ _ _
Cga+Cgd
OCdo+Cgd

0
120

Vos=8OV ,_::,

Vos=200v_ .......
Vos-320V IRFP330~

r-----

13

§ 1\
800

0

C>os

W

/.

cj
400 1\

5

\' i'..
100..

eo..

~

c.u

8

16

24

32

40

0". TOTAL GATE CHARGE (nC)
Typical Gate Charge Va. Gat..To-Source Voltage

2.5

7.5

VJ.1OV

2.0

V.

/. K=ov

or
II:

...
III

~
!iIII
.i::.u

.A ~

L
1

I--

/

,..".~

z

4.5

3.0

....

--........

r-.

........... ~330,1
..........
.........
.......

r-....

IRFP 332,3

......

II:

= OF 2.,

Rostllfll MEASURED

o

10

WrrH

CURRENT PULSE OF
INIllAL T'025T-

r-----

15

20

25

10. DRAIN CURRENT (AMPERESI

"S

I

r---....

C

2.",," DURATION.
k~~N,~

5

6.0

III

.l- I'

5

~

I

I

0

50

Typical Capacitance Va. Drain to Source Voltage

i.

ID-7A

II

10
20
30
40
V... DRAIN-TO-SOURCE VOLTAGE (VOLTS)

I

J

,

"1'\
~~

1.5

o

25

50

75

100

125

,
150

Te. CASE TEMPERATURE ('C)

Typical On-Realstance Va. Drain Current

Maximum Drain Current Va. Case Temperature

80

r70

Iii

60

~

50

iii

30

~

0

'"

'\

\.

'\

I·
,f

"1,\

~

10

O.

20

40

60

80

100

r\..

120

t\.

140

To. CASE T~PERATURE ('C) •

Power Va: Tempel!dure Derating Curve

c8

SAMSUNG

SE~ICONDUCTOR

,'·1;97

~-CHANNEL

.IRFP340/3411342/343

..

POWER MOSFETS

FEATURES

•
•
•
•
•
•
•
•

Low RDS(on)
Improved Inductive ruggedness
.Fast switching times
Rugged polyslllcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRFP340

400V

0.550

10A

IRFP341

350V

0.550

10A

IRFP342

400V

0.800

8.0A

IRFP343

350V

0.800

8.0A

MAXIMUM RATINGS
Characteristic

Symbol

IRFP340

IRFP341

IRFP342

IRFP343

Unit

Voss

400

350

400

350

Vdc

VOGA

400

350

400

350

Vdc

Drain-Source Voltage (1)
. Drain-Gate Voltage (Ras= 1.0MD) (1)
Gate-Source Voltage

±20

Vas

Vdc

Continuous Drain Current Tc=25°C

10

10

10

. 8.0

Continuous Drain Current Tc=100°C

10

6.0

6.0

5.0

5.0

Adc

10M

40

40

32

32

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed

,

Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

Adc

laM

±1.5

Adc

Po

125
1.0

Watts
WJ~C

-55 to 150

°C

300

°C

TJ. Tstg

Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

8.0

•

TL

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width .. 300,..s. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

SAMSUNG SEMICONDUCTOR

f98

N-CHANNEL
POWER MOSFETS

IRFP340/341 1342/343
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

i
Drain-Source Breakdown
Voltage

BVoss

----------

Type

(Tc=25°C unless otherwise specified)

Min Typ

Max Units

IRFP340
IRFP342 400
--- -- - ----- -1----- ---IRFP341 _
IRFP343 350 -

V

Test Conditions -

lo=250,..A

- - - - - - f - - - - - ---- - - , - - - - - - - - - - - - - - - - - - - -

'~ate Threshold Voltag_~

VGSI~~ ___ ~ ~~c-- _4-0

V

100

Vos=VGS, lo=25~~ ___________-j

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-100

,Zero Gate Voltage
Dr!lin Current

loss

ALL

-------- -- - - - - - - - - - - - - - - - - - - - - -

---------------c----- -- ------

nA VGs=20V

------- 250

~---------

nA VGs= -20V

- ----------

- - - - -- - - - - - -

,..A Vos=Max_ Rating, VGs=OV

1000 ,..A Vos=Max_ RatingXO.B, VGs=OV, Tc=125°C

- - - -f--- - - --- --IRFP340
IRFP341 10

On-State Drain-Source

1010n)

,Current (2)

--

------------------j

A
----- ---- - Vos>IOlon) X ROSlon) max, VGS= 1 OV

IRFP342
IRFP343 B.O

A

--

-- ----

- - - - --------------

IRFP340

I)

Static Drain-Source On-State
IRFP341
ROSlon) r------ r-- -'----- -- -- VGS= 1 OV, 10=5.0A
,Resistance (2)
IRFP342
I)
IRFP343
- - - - - - - ---+----+------f-- - ~--~------ - - - - - - - - - - - - - - ---------Forward Transconductance (2)
gfs
ALL
4.0 7.0
!l Vos>IOlon)XROSlon) max, 10=5.0A •
-- - - - - - - - - - f - - - - f----~- ~--------------Input Capacitance
Ciss
ALL
1 300 1 600 pF
--- -------- - - --1------- -

'Output Capacitance

--- -------

-

Reverse Transfer Capacitance

------------- --

- - -----

Coss

ALL

250

450

pF VGs=OV, Vos=25V, f=1.0MHz

Crss .

ALL

50

160

pF

-- f---

--c----- - ---

--f-- ---

Tu!'2.-~n_~:'a~T~l11e ____ ~~ __~l:~+=-:,1'1~~.:rim~_ ___ __

ALL
- -- ---tr-- -----c--

Turn-OffD~la~_:~~~_
Fall Time

_!<:IOffl.. __ ~l:
tf

- --- --- - -

35

_______

ALL

Q -- -

a.

_

__

35

ns

- ---f-----+--+-----,--------------I

ALL
ALL __ C-

--r-=-

ALL

-----

ns

Voo=0.5BVoss, lo=5.0A, Zo=4.7 {,
15
ns
i---+----+---I(MOSFET switching times are essentially
~ ~_ independent of operating tempera\ure.)

---- f------

Total Gate Charge
,(Gate-Source Plus Gate-Drain)
Qg
G- ;--S- - C;; -- -- - -I e: °lJ~ce ~~e _ _ __ (IS_
Qgd
,Gate-Drain ("Miller") Charge

--+-------------

-

41
-60

60

nC VGs= 1 OV, 10= 12A, Vos=O.B Max. Rating
C (Gate charge is essentially independent of
_':"'I---:-_~ operating temperature.)
35
nC

THERMAL RESISTANCE
~JUnction-to-case

RthJC

ALL

-

-

1.0

K/W

i:case-to-Sink

RthCS

ALL

-

0.1

-

K/W Mounting surface flat, smooth, and greased

RthJA

ALL

-

-

BO

K/W Free Air Operation

- - - - - - - - - - - - - - - f----

Junction-to:Ambient

-----

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300,..s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

199

II

N-CHANNEL

POWER MQS,FEIS

'IRFP340/3411342/343

.); t

SOURCE-DRAIN DIODE RATINGS 'AND CHARACTERISTICS
Characteristic

Min -Typ

Symbol

Type

Is

IRFP340
IRFP341
IRFP342
IRFP343

Continuous Source Current
(Body Diode)

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

-

-

IRFP340
IRFP341
IRFP342
IRFP343

-

IRFP,340
IRFP341

-

IRFP342
IRFP343

Reverse Recovery Time

Max Units

Test Conditions
r

A

10
.8.0

~

A Modified MOSFET symbol
showing the integral
reverse P-N junction reetifier

,
40

",

32

A

2.0

V

Tc=25°C,ls=10A,VGS=OV

'1.9

V

Tc=25°C, Is=8.0A, VGS=OV

-

ALL
800
ns TJ=1.50°C,IF=10A, dIF/dt=100Al,..s
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth';;300"s, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
30

I

rv

5

~PuIse.Test

VGS-10V

.

'

I

(J

1,l'~lJ

0

I

\.,'

5

vos-av

~~'-25"Cb
T'--55' _

f

IYGS=7V_ I--

L

5

5
BDIS
Pulse_
Test_
v".>\,..,x

ev- I--

Vos

0

v~J5- r--

TJ='25°~,

5r-r'=25'c.~'JJ
TJ=-55°C

~

VGS-4V

o

20

40

60

60

100

120

o

2
4
6
8
10
12
v... GATE-TO-SOURCE VOLTAGE (VOLTS)

VDS, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

25

Vos-10V

sJPubelest

./

0

5

.~

~

~

VGS=8V

OPERATION IN THIS

AREA IS UMrrED

1
0'!
EiI.
5 r-------iRFP 340,1
r-r BY l
Aosralll

irii H

~

4

VGS-;~

-~~

""

/

0

Typical Transler Characteristics

vy

~

VGS-6V

" 'II',w..

~V

f'
5

/
o

c8

10Qms

VGS=5V-

~

oo,'m
0.1~-,-1~
11.L.L.I111~:I:-J--l.::1:1.1~
11"rr",-P34~~'2~J.,UJ
21-+---H--++++++--+-+-I+I-h':'f" 341i3~

VGS""4V

2

14

"

6

8

10

1.0

2.

5

10

20

50

100 200

500

VDS. DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Ves. DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum Sal!!, Operstlng Area

SAMSUNG SEMICONDUCTOR

N-CHANNEL
POWER" MOSFETS

IRFP340134113421343

;!E

1.0

w;:,

0.5

.... z

~~

fd~

~~ o. 2

~~
l;i

o. 1

3!

.05

ii

I

0:10

j

r-D_

-.
D-

~1ijiiII
:oil!

NOTES

IrUL
~.~

SINGlE PULSE tTRANSIENT
THERMAL IMPEDANCE)

1. Duty FacIOr.

o-t

2 Per UnIt Base-Rt...c=1 0
3 T.....-Tc·Pouz....c It)

0.02
0.0 1
10'

lq-'

-.

I I IIIIII

-.

5
10-,
2
5
10
2
5
10
11. SQUARE WAVE PULSE DURATION (SECONDS)

[leg

crw

I I I I III
10

Maximum Effective Transient Thermal Impedance Junction- tcH:ase Vs. Pulse Duration

5

i
i!

•

103

pLe TeJ
- r--l~
vos>fotanlXRos!""1 m..

5

I

12
2

TJ=-55~C

I

T~=2!oC =
==
T=,!5 C -

~

9

'/

II

b--"""

",

5

-.....

0

J

A

2

j~

TJ'=25°C

)

0

It
II'

Tr150"C

5
:--TJ -150"C

r

III Trs'l

2

1.0
5

10
15
20
ID. DRAIN CURRENT (AMPERES)

25

o

2 4 5

Vso. SOURCE--TO-DRAIN VOLTAGE (VOLTS)

TypIcal Transconductance V.. Drain Current

Typical Source-Drain Diode Forward Voltage

1.2 5

2. 5

5

0

l;....-' I--"
Ii

,~

5/

/

~

V

~

L V

5

,/

V
0

....... . /
5

V

,/"

5

Vos.,1OV
~-5A

0.7 5
40

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

160

0
40

0

40
80
120
TJ. JUNcnON TEMPERATURE (OC)

160

Normalized On-Rasistance Vs. Temperature

201

N-CHANNEL
POWER .MOSFETS

rRFP340134113421343
200

k--

160

o~
\

'iw 1200

25

CIs's=cQs+Cgd, SHORTED

I

C",,=Cgd

I

r-- Coss-Cds+ cgaegd
Cgs+Cgd

0

~Cds+Cgd

.....

CIa8

5

\

~

800

40o

\

VM=200~~

"I\.

..........

..........

o

Vos""320V, IAFP340,2

.

10

\ \

lo(on)XROS(on) max., VGS= 1 OV

VGs=10V,lo=B.OA

ALL

B.O

ALL

Output CapaCitance

Coss

ALL

Reverse Transfer Capacitance

Crss

ALL

-

Turn-On Delay Time

talon)

ALL

t,

ALL

-

I.i(Off)

ALL

-

tl

ALL

Og

ALL

Gate-Source Char!;le

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

-

2630 3000

0

Vos>lq(on)XROS(on) max., lo=B.OA

pF

390

600

pF VGs=OV, Vos=25V, f=1.0MHz

130

200

pF

-

35

ns

65

ns

150

ns

75

ns

.73

120

14
59

-

-

Voo=0.5BVoss, lo=S.OA, Zo=4.70:
(MOSFET switching times are essentially
independent of operating temperature.)
I

nC VGS=10V, lo=lBA, Vos=O.S Max. Rating
(Gate charge is essentially independent of
nC
operating temperature. See Fig. B page 21
nC

. THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

0.S3

0.1

-

K/W Mounting surface fiat, smooth, and greased

-

SO

K/W Free Air Operation

KIW

Notes: (1) TJ=25°C to 150°C
(2) Pulse tE!st: Pulse widthIDlOI>lXAjonl""'"

0;
w

6

I

II

W
II.

:IE

~

Vas 5V

$

....
"
.

. T'~',5'C\

Iiw
Vas=45V

50

100

150

TJ~-55GC\,

h
/J/

S

Vas""4V

~

Vas

o

T,=2r C\ \

z

C
c

I

I

:::>

200

5V

c-

250

300

o

1

Vas, DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical Output Characteristics

10

Vas -10V

'1V~l7V

II

I
$

5

6

~esl

102
OPERATION IN THIS AREA IS UMITED BY RDSIc

-IRFP 350,1

3f2 i3
-'RF~ 310.1,

VGS"'}SV:-:-

,
,I"

_IRFP 352,3

.

I

IJI

VGS"'~

J

r

1

III

'Om.

2

3

4

,~J~.

t\..

Vas-4V

s

,~'

'0,,",
1m.

J~

Ii
II!
i3
~
!Ii

=8

4

Typical Transfer Characteristics

1//

6

3

-IAFi

l'..,

t3

aOlls1purse

~

2

VOS, GATE-To-5oURCE VOLTAGE (VOLTS)

=

Tc- 2S"C

-

A,...c 083KIW
SINGLE PULSE

=

TJ =150·C MAX
,'~FP 35~ ,3
IRFP 350,2

I IIIIJ IL

5V

o. 1

10

11111111
2

5

10

:11
20

50

100

m
II

200 500

Vas. DRAIN-T0-50URCE ·VOLTAGE (VOLTS)

Vas. DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum Safe Operating Area

SAMSUNG SEMICONDUCTOR

205

N-CHANNEL
POWER MOSFETS"

IRFP350135113521353

I!II

I

I

....
a:i

I

:I I

I

I

~ 1,ol!!~~!1il~~!I~~~tllf~!!~:t!!!li!!!~!;~~~;;~~f!~~!!"!~~~~!1I

H

~~

05 0=05

t~
~~
W
i lN ..
W= 0.2

_I"""

I £:

i

0-02

I

I,

I

FllD;'~'"D!l.1l.;;;;*,****~*4'=R-rH'1tr-r"'E-~;;;t:tliifitli""'=-H-:--jitn--+-t1-',I
I '! IflJLP~
NOTES

!

05
~ I 0,0"!!D!-D!D!5!111~~~~III~!~~~I~!!!~;I~f~
'l
rrriill'MPrAiCEll
::0 ...

11:..

0-001

,.

~

t) /

~

f--

-0-002

~i

StNGLE PULSE ITRANSIENT

~

1+-t-++tt---++-+~iH-H+f-+-t--1

0.02

t, ; ,

I

r-- --j

I

Duly Factor, 0=+

2 Per Unit Base-RII'IJC=O 83 Dog C.W

001'0~

1-'-!-"~....L...J,---L..'-,II,...u,IIII~
1+-J...J..!-L-Iu.u..,...J..+....I-..IL~1.J.J..U,I,-,-I-+--J.J...J.Ti-+1TI.l.L'jlwl~lz_""J..llt'l+--!.I,...I.J...
11u.w
11
510'

,..I....l.-I.

10-3
5
2
5
'O~
2
11, SQUARE WAVE PULSE DURATION (SECONDS)

10-4

10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

10'_ __

20

18
I
12
iii"

zW

TJ ""-55°C _ _

~

. /~ ~

W

u

z

. . . .V ,/

~

u

i

.f'~

VI '/

z

:f
co

/. V

,}

-

i-"'"

I--

Tr25°C

_

:3!~:-

il/

4

III

80jiS Pulse Test

Vos>lo!""IXADSlOI1I ....

f

8 12

16 20

1.°0!:--JLl-,I-..I..~2:--..L..~3-1--4~-'-~5:--~~

1.0. DRAIN CURRENT (AMPERES)

Typl~al

1.2

5

2.5

~

!:i

g

1.1 5

z.

;I'

g

~a

.w"~

,.V

1.05.

~~
~~ O,g

"',,!

VOD, SOURCE·TO·DRAIN VOLTAGE (VOLTS)

Typical Source-Drain Diode Forward Voltage

Transconductance Vs. Drain Current

0.8

5

./
V'

. . .v

,

,.,.

~
~

..
t;

2,0

/

iiia:
~6

~~
::> ..

/

1.5

./

olE

/

~i

,

:c
!S

i

5

.......

1,0

,,/

/.
./

0,5

VGS =-10V

II:

0.7 5
-40

o

40

80 120 160

TJ, JUNCTION TEMPERATURE ('C)

BreakdOwn Voltage Vs. Temperature

c8

SAMSUNG

SEMICO~DUCTOR

V .

JD ""8A

-40

o

0

40

80 120 160

T J, JUNCTION TEMPERATURE ('C)

Normalized On-Resistance Vs. Temperature

206

N-CHANNEL
IRFP350135113521353
400

POWER MOSFETS
5

o \

3200

\
~

c..

iw 2400

~:::~~~

;

VosC320V::::

vascO
, .. , MHz

~ 1600

u·
ti

800

Ccss-Cgs+Cgd, Cds SHORTED

l\
\'

"""-Ood

I

I

~P'

I--

0

A

Coss=Cds+~
Cgs+Cgd
.

~

~Cds+Cgd

~ i'o..
r--

o

Coss

I

<>as

10

20

30

40

i
I

28

2 0jAs DURATION INITIAL TJ =o25"C (HEATING

rs PULSE IS MINIMAl

J
:$

~

/.

5

0

o. 2

16

I

'v JvV

0.6

I

140

J_ ..kASU.JO Wlri. CURJENT ..JLSE o~

O. 7

0.3

112

20

08

_
a:

84

Typical Gate Charge Vs. Gat..To:.5ource Voltage

z

!

58

B•

ag• TOTAL GATE CHARGE (nC)

EFFECT OF 2.

0.4

--i

VDS. DRAIN-T0-50URCE VOLTAGE (VOLTS)

0.9 f--

,..

~

Typical Capacitance Vs. Drain to Source Voltage

a:

o

~

/

50

1

1'0

~ P'

.... ~

~

V

a:

15

12

"

..........

i

Vvas=20V

~ "/
I--

..........

......... ~

.....
..........

r--... .......

................ NFP35Q,'

I

-I
75

30
45
60
ID. DRAIN CURRENT (AIIo1PERES)

IRFP 3S;)

~,

~
0
25

50

75

1 0

125

,

\.

1 0

TA. AMBIENT TEMPERATURE (OC)

Typical On-fleslstance Vs. Drain Current

MIIximum Drain Current Va. Case Temperature

160

~
140

iii 120

i
I~
z

a:

Il

'"

100

80
60

40

\.

",'\

""

r\.

0

o

"\

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

I\. 160

140

Power Va. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

207

IRFP.420/4.21 1422/423

. POWER MOSFETS

FEATURES
• Low RDS(on) at high voltage
• Improved Inductive ruggedness
• Excellent high voltage stability
• Fast switching times
• Rugged polyslUcon gate ,cell structure
• Low Input capaCitance
• Extended safe operating area
• Improved high temperature reliability
• ,'To-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRFP420'

500V

3.00

2.5A

IRFP421

450V

3.00

2.5A

IRFP422

500V

4.00

2.0A

D,'

~

G

,

"
IRFP423

450V

4.00

.

S

2.0A

MAXIMUM RATINGS
Symbol

IRFP420

IRFP421

IRFP422

IRFP423

Unit

Drain-Source Voltage (1)

Characteristic

Voss

500

450

500

·450

Vdc

Drain-Gate, Voltage (RGs=1.0.MO) (1)

VOOR

500

450

500

450

Vdc

' Vas

Gate-Source Voltage

Vdc

±20'

Continuous Drain Current Tc=25·C

10

2.5

2.5

2.0

2.0

Continuous Drain Current Tc=100·C

10

1.5

1.5

1.0

1.0

Adc

10M

10

10

B.O

B.O

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed

I

IGM

±1.5

Adc

Po

40
0.32

Watts
W/·'C

TJ. Tstg

-55 to 150

.~C

TL

300

·C

Total Power Dissipation @ Tc=25·C
Derate above 25·C
Operating and Storage
,Junction Temperature Range

Adc

,

Mllximum Lead Temp. for Soldering
Pur~s.. lIB" from case for 5 seconds

,

.

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse width..300JAS. Duty Cycle-.2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8S~MSUNG SEMICONDUcToR

, ~20B

N-CHANNEL
POWER MOSFETS

IRFP420142114221423
EL.ECTRICAL CHARACTERISTICS
Characteristic

Symbol

i
Drain-Source Breakdown
Voltage·

BVoss

Type

(Tc=25°Ctinless otherwise specified)

Min Typ

Max Units

Test Conditions

IRFP420
500
IRFP422

-

-

V

VGs=OV

IRFP421
450
IRFP423

-

.-

V

10=250"A
Vos=VGS, 10=250"A

VGS(th)

ALL

2.0

-

4.0

V

Gate-Source Leakage Forward

IGSS

ALL

IGSS

ALL

-

nA VGs=20V

Gate-Source Leakage Reverse

-

100

,Gate Threshold Voltage

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
I Current (2)

10(on)

ALL

A

IRFP422
2.0
IRFP423

-

-

A

2.5

3.0

11

4.0

11

-

U

300

600

pF

75

150

pF VGs=OV, Vos=25V, f=1.0MHz

Vos>IO(on)XROS(on) max., VGS= 1OV

gr.

ALL

1.0 1.75

Input Capacitance

CISS

ALL

Coss

ALL

Reverse Transfer Capacitance

C,••

ALL

Turn-On Delay Time

id(on)

ALL

t,

ALL

td(Off)

ALL

tf

ALL

Qg

ALL

Qg.

ALL

Qgd

ALL

-

Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
I Gate-Drain

("Miller") Charge

"A Vos=Max. Rating, VGs=OV

1000 "A Vos=Max. RatingxO.8, VGs=OV, Tc=125°C

-

Forward Transconductance (2)

Turn"Off Delay Time

nA VGs=-20V

-

-

Rise Time

250

IRFP420
2.5
IRFP421

IRFP420
IRFP421
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRFP422
IRFP423

'Output Capacitance

-100

-

VGs= 1.0V, .10= 1 .OA
3.0

20

40

pF

~

60

ns

50

ns

I

Vos>IO(on)XROS(on) max, 10= 1.0A

,

-

60

ns

30

ns

11

15

5.0

-

nC VGs=10V, 10=3.0A, Vos=0·.8 Max. Rating
(Gate charge is essentially independent of.
nC
operating temperature.)
nC

6.0

Voo=0.5BVoss, 10=1.0A, Zo=5011,
(MOSFET switching times are essentially
independent of operating temperature.)

THERMAL RESISTANCE
IJunction-to-Case

RthJC

ALL

iCase-to-Sink

RthCS

ALL

IJUnction-to-Ambient

RthJA

ALL

-

-

3.12

0.1

-

K/W Mounting surface flat, smooth, and greased

-

80

K/W Free Air Operation

K/W

Notes: (1) TJ=25°C to ·150°C·
(2) Pulse test: Pulse width"300"s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8 SAiIII~UNG

SEMICONDUCTOR

209

N-CHANNEL
POWER MOSFETS

IR:FP420/421
1422/423
':1'
"
.

SOURCE-DRAIN. DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Type

-

-

2.5

A

Is

IRFP420
IRFP421
IRFP422
IRFP423

-

-

2.0

A

IRFP420
,IRFP421

-

-

10

A

IRFP422
IRFP423

-

-

8.0

A

1.4

V

Tc=25°C, Is=2.5A, VGs=OV

1.3

V

Tc=25°C, Is=2.0A, VGs=OV

600

-

ns

TJ=150°C,

Continuous Source Current
(Body Diode)

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Reverse Recovery Time

In-

Min Typ

IRFP420
IRFP421
IRFP422
IRFP423
ALL

Max Units

Test Conditions

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

~

iF =2.5A, dIF/dt=100A/"s

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width'-300"s, Duty Cycle'-2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
5
Vas -10V

VGS=ls,sv

8i

iii

,,'

w

~

Pulse

--=

Pulse

TJ -25°C ,

V~h""IXRosc""l :.-

4

Test

TJ ""-55°C

iii
w

iii
...

...iii2

Vas=60V

2

!.

!.

l-

1l0:i

TJ=125°~
f--sL tst It-t-.....

3

I-

i50:

3

~

0:

::>

"

VG=55V

Z

2

~
0:

Ci

:s

Q

:9

R

VG5=5.0V

TJ "'125°C ...........

1 r-TJ=25°C

r,-t55"G:::.iJ

Vos=145V I----

jlj

Vas -4.0V

100
150
200
250
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

2

5
--'-

-.J . . . lr...

~

I'

j /

V/

1..)V

,

12

14

OPERATION IN THIS
AREA IS UMITED

Vas=6.0V

BV Rostonl
IRFP 420,1

IRFP 42~,3

I.V

2

10

Vas -7V

/ V

3

8

102

-l~J

V

6

Typical Transfer Characteristics

L:

4

o

V..

4

vo.. GATE-TO-SOURCE VOLTAGE (\IOLTS)

Typical Output Characteristics

r-.

-IRFP 420,1
VGS ""S.5V

JRFP

42:~

1"'\

0

V~-510V

~ ~~:~:~~c
5~ r"""-3,,
-

VGS.J.5V":"
Vos'G4.OV

4
8
12
16
VDS, DRAIN-TO-SOURC.E VOLTAGE (VOLTS)

Typical Saturation Characteristics

CBSAMSUNG SEMICONDUCTOR,

f-

1.0

"'

'Iorr
'rna

K/W

111111
2

Ll

MAX.

SINGLE PULSE

2

o. 1
20

,

,
IRFP4"'~~
'r~~ ~f°,2'

,I,,!,~
IIII
,oOms

,5.
10
20
50
100 200
500
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

, 210

N-CHANNEL
POWER MOSFETS

IRFP420/42f/422/423
2

a
0-05

5

ii~

i""'"

:;;.

0-0.2

2

I""'"
.... p.- I""'"

oLD \
1

r:iI!'

0"'0.05

•

NOTES

IrLfL
~.~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

t-O-O.02

5~

FOe-DO'

1 Duty Factor, O=-i;

I"""

2 Per Umt Baae-RII\JC=3 12 Oeg elW
3 T,N"""Tc=PCMZe...:: (t)

2
0.0 1

10-'

10

5

~

10.,

2

5

,

10'

2

..

5

I 1111111

I I I I III

10

2

10

11. SOUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junctlon-to-Case Vs. Pulse Duration

5

103

5

80¢! Pulse Tesll
Vos>IDtonIX.RDSlMJ ""'"

4

-

55°C

T,

",V ~

3

V

I~

. /~

V V ~ r-

"""'

2
2

TJ "25°C - TJ -125°C

5

I--

v.-

/I

II.
1. a
1

~ t"'"

1.05

"I!l
01::;
we

0.85

I

0.75

6

/

V

'"

a

!..--'" i-'"

V
... V

/'

V
./

V

.........V
Vos1l:1DV

'="[-- r-40

a

sa.

40
120
TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

c8

5

Typical Source-Drain Diode Forward Voltage

....

"

4

2. 5

1.1 5

"" 0.9 5~
~~

3

V.D. SOURCE·Te-DRAIN VOLTAGE (VOLTS)

1.25

UiE

TJ=t50~C

TJ =2r C

2
3
4
ID. DRAIN CURRENT (AMPERES)

Typical Transconductance Vs. Drain Current

i

Tr 150·C

W

a

~iS'

lI'

a

I(

i

~

J

I

~g

TJ -25°C

2

SAMSUNG SEMICONDUCTOR

160

o

-40.

o

40
so
120
TJ. JUNCTION TEMPERATURE (OC)

Normalized On-Resistance Va. Temperature

160

N-CHANNEL
POWER MOSFETS

·IRFP420/421 1422/423
1000

25

Jv",-o
ifl

I

.

1_1 MHz

800

'

Ciss-Cgs+Cgd, ;.. SH RTEO
Coss=Cgd
I
ilCds+Cgd

5

600

1\ '

400

---

5

1

fS'

~1±

,

2

:>

5

~

4

J

.4

r--..
l"- i'-

r-....

IRFP

.2

J

'/

1
6
8
10
12
14
16
I•• DRAIN CURRENT (AMPERES)

18

2.0

Typical On-Resistance Vs. Drain Current

5

~IRFP420.1

4~;::-"" ~....

~

,~

25

50

.

75
100
.12.
TA. AMBIENT TEMPERATURE ("C)

~
~150

Maximum Drain Current Vs. Case T_perature

'\
1,\

0

f'\

5

\

"-

0

\

5
0
5

o

20

I' r'\

0
4

16

o.8

V

2

0

"'" ~"
r-....

~vGS=2Av

3

12

3 .0

hi v,,-,L

g

t

8

Typical Gate Charge Vs. Gete-To-Source Voltage

PULSE IS MINIMAL)

7

4

Cf4 DURATION

INITIAL TJ""25°C.

8

6

~

V

lHEATING EFFECT OF 2.D¢;

w

~

o

Q .. TOTAL GATE. CHARGE (net

L MJASUREb j~

0
9

I

1o=3A

/

Ctss

50

..i1Il~
~

All ~

Coos

Typical Capacitance Vs. Drain to Source Voltage

i

,

0
C. .

10
20
30
40
V... DRAIN-TMOURCE'YOLTAGE (VOLTS)

fl

Jq&-25lN~

Vcs -4OOV 1RFP420,.l!:~

.......

\'

.,.

V!lli"'100v

1\

200\

IB

,

~

eo.s=Cds+=d

20

:,,''\

40
60
80
100
120
TA. AMBIENT TEMPERATURE ("C)

1\

140

160

Power Vs. Temperature Derating Curve

c8SAM,SUNG SEMICONDUCTOR

212

N-CHANNEL
POWER MOSFETS

. IRFP430/431 1432/433
FEATURES
•
•
•
•
•
•
•
•
•

Low ROS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

Vos

RDS(on)

10

IRFP430

500V

1.511

4.5A

450V

1.511

4.5A

IRFP432

500V

2.011

4.0A

IRFP433

450V

2.011

4.0A

I--

~

IRFP431

r-

-'--

r-

MAXIMUM RATINGS
Symbol

IRFP430

IRFP431

IRFP432

IRFP433

Unit

Drain-Source Voltage (1)

VDSS

500

·450

500

450

Vdc

Drain-Gate Voltage (HGs=1.0MI1) (1)

VOOR

500

450

500

450

Vdc

Characteristic

Gate-Source Voltage .

±20

VGS

Vdc

Continuous Drain Current Tc=25°C

10

4.5

4.5

4.0

4.0

Adc

Continuous Drain Current Tc=100°C

10.

3.0

3.0

2.5

2.5

Adc

18

18

16

16

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed
Total Power Dissipation @ Tc=25°C
.Derate above 25°C
Operating and Storage
Junction Temperature Range

10M

IGM

±1.5

Adc

Po

75
0.6

WioC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Watts

Notes; (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width.. 300,..s, Duty Cycl~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

Q;SAMSUNG SEMICONDUCTOR

213

N-CHANNEL
POWER MOSFETS

IRFP43{)143114321433
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Drain-Source Breakdown
Voltage

Gate Threshold Voltag!l

BVoss

Type

ALL

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

loss

1010n)

ALL
IRFP430
IRFP431

2.. 0 - - - 4.5 -

ROSlon)

-:

V

VGs=OV

-

V

10=250"A

4.0

V

100

nA

-100

nA

VGs=-20V

"A

Vos=Max. Rating, VGs=OV

1000

"A

Vos=Max. RatingXO.8, VGs=OV, Tc=125°C

-

A

-

-

flo;

IRFP430
IRFP431

-

0.95 1.5

0

IRFP432
IRFP433

-

1.4

2.0

O·

-

IJ

VGs=10V,lo=2.5A

g,.

ALL

2.5 3.2

Input Capacitance

Ci••

ALL

720 800
110 200

pF

50

pF

Output CapaC;itance

Coss

ALL

-

Reverse Transfer Capacitance

C,ss

ALL

-

Turn-On Delay Time

tdlon)

ALL

t,

ALL

- - 30
- 30
- - 55
- - 30
- 22 30
- 4.2 - 17.8 -

td(~ff)

ALL

t,

ALL

Total Gate Charge
(Gate-Source Plus Gate-Draint

Qg

ALL

Gate-Source Charge

Qg.

ALL

IGate-Drain ("Miller") Charge

Qgd

ALL

Turn-Off Delay Time
Fall Time

Vos=VGS, 10=250"A
VGs=20V

250

Forward Transconductance (2)

Rise Time'

Test Conditio.ns

VoS>lolon)XROSlon) max., VGS= 1 OV

IRFP432
4.0
IRFP433

Static Drain-Source On-State
Resistance (2)

-

IRFP431
450
IRFP433
VGSlth)

On-State Drain-Source
Current (2)

Min Typ Max Units

IRFP430
500
IRFP432

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified)

60

Vos>lo(on)XRoS(on) max., 10""2.5A

pF
VGs=OV, Vos=25V, f=l .0MHz

ns
ns
ns

Voo""0.5BVoss, 10""2.5A, Zo=15 0
(MOSFET switching times are essentially
independent of operating temperature.)

ns
nC
nC

VGs= 1 OV, 10=6.0A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of·
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Case

RttlJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

- - 1.67
- 0.1 - - 80

K/W
K/W Mounting surface flat, smoot~, and greased
K/W Free Air Operation

Notes: (1) TJ""25°C to 1·50°C
(2) Pulse test: Pulse width~X~~....,.

VGS=5V

TJ =-55"C
TJ =25°C:TJ =125"C
Vas=45V

I
I

I"VI

I

~

~V

o

100
200
YDS, DRAIN-TO-SOURCE VOLTAGE (YOLTS)

300

1

J

,

I

VGS

#

5

5

SOIolS Pulse Test

OPERATION IN THIS

2E"~c::48'
--iiiFP 432~"f

Vas=5V

~

AREA IS UMITED_
BYADS(M) ,

7')

~,

5 "-- JRFP 430,1

,

~JRFP432.3

2

VGS=4.5V

'--

,--

V(>S=4V

2
o. 1

"

l/

5==

/

6

10 2

=S1 5V

If

c8

4

Typical Transfer Characteristics

J

~

3

VOS, GATE-TO-SOURCE YOLTAGE (VOLTS)

Typical Output Characteristics

VOO-10~

2

TJ =150"C MAX
~c"'1.67 KIWSINGLE PULSE

1111111

10ms
IRFP 431,3

·m

p43O

"!"

100m

ITI

VDS, DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum Safe Operating Area

4

6

8

SAMSUNG SEMICONDUCTOR·

10

20

,W

5.0
10
20
50
100 200
500
Vas, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

2

1.0

Tc R 25"C

10,..

1M,:'

II

N-CHANNEL

PO,WER .MostErs

fRFP43Q/4311432/433
2
0
0-0.5

5

...~~~
I-"'::

0-0.2

.2

~

olD.,
0-:r~ci5

1

~

i""1"'"

NOTES

~

LSE (TRANSIENT
SINGlE
THERMAL IMPEDANCE)

0-0.02

5 D-0.01

~i-J

--

2

1.

Duty

2

Per

Factor. D=J!.
I,

Unit easa-R.."c-Le! lDeg. CIW

3. T..,-Tc:-POMZt.Jc

.,
'0

0.0 1

'0'

10-<

I 111'111'

,
10-

(t).

I I IIIII

5
2
5
2
5
10n. SQUARE WAVE PULSE DURATION (SECONDS)

10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. P.ulse Duration

,

'/

10

TJ25°~

r}=-S5 C

i

:,...-'"

4

L

I

/y

3

V

1L

2

~.

co

V

VI /

L

V
L

~-

V

T,L,a.'!'

V t---

TJ -150°C=

i--

k?

-

'"
Vos>IDlOIlIXAostonI .....

Trl50°.c.

80JiS Pulse Test

11VL

TJ -25°C

!IJ

"

0.1
1

2

3

4

1.25

1

1.5

2

25

Typical Source-Drain Diode F.OIWard Voltage

2.5

1.15

i..,...--

~

-j.....-' V

~61.05

wI\!

iii ..
we

uiI!

L
"''''
~i 0.95,."

I-c~
-

0.5

Vso. SOURCE-TD-ORAIN VOLTAGE (VOLTS)

,

w

~

o

10. DRAIN CURRENT (AMPERES)

Typical Transcounductance Vs. Drain Current

g

I

2

o

IdII'"

:,...-'"

1/

""'"

V
~

...... ~

,/

0.85

.,

~
0.5

. . .V

./V
Vos"'10V

1o-2.5A

'"
07 5

-

40

40

80

120

TJ. JUNCTION TEMPERATURE (OC)

160

-

\

Breakdown VoHage Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

21.6

"

N-CHANNEL
POWER MOSFETS

IRFP430143114321433
2000

5

La

.1 1

1=1 Uta

Cms=Cgs+Cgd, Cds SHORTED

1600

e... -Cgd~

J

~

Coas=Cds+ CgsCgd

Cos+Cgd
Qcds+bgct

i

vos ... ,oov

~12oo

~<1

\

Vos=25OV,

800

a

Vos",400V

\

e..

~~
h

\

400

,\
10

V...

20

40

8

50

VOLTAGE (VOLTSI

I--

-

...... f"'"""o.. I"--....
J"""--. r-....

3

A~

-

- ---

""'"' "

~

10

15

20

25

I.. DRAIN CURRENT (AMPERESI

'\~

\

0
25

50

75

Te. CASE

Typical On-Reslstance v.s. Drain Current

I

~

1

o

40

IRFP 430,1

IRFP43~'"

VGS~1OV

Vos-20V

~~

,

32

-- r-....r-.... .....

Of' 1
INIT1Al TJ""'25°C.
(HEATING EFFECT OF 2.~ PULSE IS MINIMjl

K

24

TOTAL GATEi CHARGE (nCI

Typical Gate Charge Vs. Gat.To-Source Voltage

-.1,
~.LRED LH du.REl
PUt¥ 2.".. F"RAi'"T
~

16
Q ..

Typical Capacitance Va. Drain to Source Voltage

r--

ID "'6A

/

30

DRAIN-TO-SOURC~

V

1

Coos

"

~
V

100
TEM~RATURE

126

,
15o

(OCI

Maximum Drain Current Vs. Case Temperature

80

~
70

i\.

\.
'\

'\

0

'"

-I\.

0
0

o

20

40

60

60

100

r\.
120

,

140

180

To, CASE TEMPERATURE (OCI

Power VI. Temperature Derating Curve

=8SAMSUNG SEMICONDUCTOR

217

. N-CHANNEL
POWER MOSFETS

IRFP440144114421443
FEATURES
•
•
•
•
•
•
•
•

Low RDS(on) at high voltage
Improved Inductive ruggedness
Excel.lent high voltage stability
Fast switching times
Rugged polysillcon gate cen structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
• TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

RDS(onl

ID

IRFP440

500V

0.850

8.0A

IRFP441

450V

0.850

8.0A

IRFP442

-500V

1.100

7.0A

IRFP443

450V

1.100

7.0A

MAXIMUM RATINGS
Characteristic

Symbol

Drain-Source Voltage (1)

Voss

Drain-Gate Voltage (RGs=1.0MU)(1)

VOGR

Gate-Source Voltage

VGS

Continuous Drain Current Tc=25°C

Drain Current-Pulsed (3)
- - Gate Current-Pulsed
Total Power Dissipation @ Tc=25°C
Derate above 25·C
Operating and Storage
Junction Temperature Range

IRFP443

Unn.

500

450

500

450

Vdc

500

450

500

450

Vdc

±20
7.0

7.0

Ado

10

5.0

5.0 .

4.0

4.0

Adc

10M

32

32

28

28

Adc

IGM

±1.5

Adc

Po

125
1.0

Watts

-55

SAMSUNG SEMICONDUCTOR

,wr~c

to 150

··"C"

,
TL

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse widtM300jAS, Duty Cycle",2%
'
(3) Repetitive rating: Pulse width limited by max: junction temperature

c8

Vdc

8.0

TJ. Tstg

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

IRFP442

8.0

10

Continuous Drain Current Tc=100°C

IRFP441

IRFP440

300

",

·C

N-CHANNEL
POWER MOSFETS

IRFP440/441 1442/443
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

I
Drain-Source Breakdown
Voltage

Gate Threshold Voltage

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRFP441
450
IRFP443

-

-

V

10=250",A

4.0

V

Vos=VGS, 10=250",A

100

nA VGs=20V

VGS(th) .

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Z~ro

loss

ALL

-

Gate Voltage
Drain Current

On-State Drain-Source
Current (2)

~

10(on)

-100
250

nA VGs=-20V
",A Vos=Max. Rating, VGs=OV

1000 ",A Vos=Max. RatingXO.8, VGs=OV, Tc=125°C

IRFP440
8.0
IRFP441

-

-

A

IRFP442
7.0
IRFP443

-

-

A

Vos>IO(on)XROS(on) max, VGs=1 OV

IRFP440
IRFP441
Static Drain:Source On-Stlj,te
ROS(on)
Resistance (2)
IRFP"442
IRFP443

-

0.6

0.85

0

-

1.0

1.1

0

6.5

-

VGs=10V,lo=4.0A

Forward Transconductance (2).

gt.

ALL

4.0

Input Capacitance

CiSS

ALL

Output Capacitance

-

Coss

ALL

Reverse Transfer Capacitance

C,ss

ALL

Turn-On Delay Time

td(on)

ALL

t,

ALL

td(Off)

ALL

tt

ALL

Rise Time
Turn-Oft Delay Time
Fall Time

Test Conditions

Max Units

IRFP440
500
IRFP442

Gate-Source Leakage Forward

-

(Tc=25°C unless otherwise specified)

1200 1600
230

IJ

Vos>IO(on)XROS(on) max., lo=4.0A

pF

350

pF VGs=OV, Vos=25V, f= 1.0MHz

65

150

pF

-

3.5

ns

15

ns

-

90

Voo=0.5BVoss, lo=4.0A, Zo=4.7 0
(MOSFET switching times are essentially
ns independent of operating temperatureJ

30

ns

34

60

6.0

nC VGs=10V, lo=10A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
nC
operating temperature.)
nC

Total Gate Charge
. Qg
(Gate-Source Plus Gate-Drain)

ALL

Gate-Source Charge

Qg.

ALL

~

Gate-Drain ("Miller") Charge

Qgd

ALL

-

28

-

-

-

1.0

K/W

0.1

-

K/W Mounting surface flat, smooth, and greased

-

80

KlW Free Air Operation

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

--

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300",s, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temper/iture

c8

SAMSUNG SEMICONDUCTOR

219

. N-CHANNEL .

IRFP440144114421443

MOSFEts

.POWER

lc:

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

. Continuous Source Current
(BOdy Diode)

Is

Pulse Source Current
(BOdy DiOde) (3)

ISM

Diode Forward Voltage (2)

VSD

Type MIO Typ
IRFP440
IRFP441
IRFP442
IRFP443·

-

IRFP440
IRFP441
IRFP442
IRFP443
IRFP440
IRFP441
IRFP442
IRFP443

Max Units

Test Conditions

-

8.0

A

-

7.0

A

-

32

A

-

28

A

-

2.0

V

Tc"'25°C, Is=8.0A, VGs=OV

-

1.~

V

Tc"'25°C, Is=7.0A, VGs=OV·

~

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

.s

-

Reverse Recovery Time
ALL
1100
ns TJ"'150°C, IF=8.0A, dIF/dt=100A/,.,s
trr
Notes: (1) TJ"'25°C to 150°.C (2) Pulse test: Pulse wldth~300jls, Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by maX. junction temperature
24

VG8=10V~

Ii

20

"-

20

~~ -~v

Vos 7V_

8"", Pulse Test

8~

IV

6

VGS=6y-

Pulse Test

VOS>Io!onJXRDS(onI .....

6

r

I
II

-

-

I

,

Ir

VGB=5V-

J

,

1/1
//1

-

TJ=125~~

,

TJ -25°C

~J=-55V!J

4

. v~=~v-

o

-

20
40
60
60
100
vos, DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

120

o

1

Typical Output Characteristics

vns'L 40Y'
f-o
j'i

J~

'/
h

V

.

"

,_

"

~

~

=J.L!,
/
0

~~::~:C;?c
~"""='O

o.:

SAMSUNG SEMICONDUCTOR

10

".0

f
2

II III

,
,00,..

.....
I ,~

"

lOOms

K!W
LSE

Fi"r~

Vos-4V

" 'I'.

/

2

Typical.Saturation Characteristics

.qs

7

mFP 442,3

Vas -45V-

2
4
6
8
VOS, DIIAIN-TQ-SOURCE VOLTAGE (VOLTS)

7 .

6

1SLft1ITEDBYR~

V08=5V

~.

o

5

~!a~~40,1.

~ ',/
~V

4

4

OPERATION IN THIS AREA

F

~

/J/

,

10

R

80,J,.... L,

3

Typical Transler Characteristics

I

10

2

Vos, GATE-TQ-SOURCE VOLTAGE (VOLTS)

"'?I
IRFP 441,3
'lRFP

449.2

1111

5
,0· 20
50
'00 200 500
Vos, DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

Maximum Sale Operating Area

.220

N-CHANNEL

IRFP440144114421443

POWER MOSFETS

tz

~

li.,

"'W>-

~

~!

1.0
05

!-

~W

It; ~

0

~~
~

i

CD- .

.... ~ ~

2~

~!

IE ...

"'c

0-

i 1 0 05

j' "

NOTES

IflSL

j..o

-

o. 1

~,----j

SINGLE PULSE (TRANSIENT

THERMAL IMPEDANCE)
1

Duty

Factor Dt:"!!'t,

2 Per Unit Base-RIhJC -1 0 Deg CtW
3 T.nrTc"'PDMz....c {t}

2

-.

-.

0.0 1
10

10

5

10-'

2

5

10-,

I I IIIIII
2

5

1 0 -.

5

I I IIIII

1

5

2

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulsa Duration

.

15
80¢1 Pulse Test

J

102

TJ"25Q~ ~-TJ=150DC

f=

r-- t-- VD9>1D("'lX~ani ""'.

i

i

~

2

i

=

9

V

V V

6

3

o

4

'0.

0

T~=25·d_

5

.J,'f'

Tl=125'\:

r-

III C
'JV
Y/

TJ "-S5 C

0

8

12

16

20

T'I
r--

'5O

'1

pTJ"25~C

o1

2

DRAIN CURRENT (AMPERES)

3

5

VSD. SOURCE-TD-DRAIN VOLTAGE (VOLTS)

Typical Transcounductance Va. Drain Current

Typical Source-Drain Diode Forward Voltage

·1.25

2.5

5

5V-

.......

L

L. ~

..... V

t.....-- j..--

V

V
V
./
0

40

1/

.,/
.,/

5'

07 5

..,,-:/

VGS=1OV

10=4

5

o

40

80

120

TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Va. Temperature

ciS SAM~UNG

SEMICONDUCTOR

160

o

-I

40

0

40

80

120

160

TJ. JUNCTION TEMPERATURE ('C)

Normalizad On-Resistance Vs. Temperature

221

N-CHANNEL
POWER MOSFETS

IRFP440144114421443
2000

J ,1 .

~:,-~~,

25

CISS-Cgs+Cgd, Cds SHORTED
Crss=Cgd

I

I

eoss-Cds+CgsCgd

1600

\

0

Cgs+Cgd

i'.

;rcds+cga

-

VDS=1~,

VCIG:II~5av,

C".

1\
\\
\ f'.

5

Vos=400V,

-

~

,,-

~"

I

I

"'- r-- ......:
10

~

1o-=10A

1

Coso
0...

20

30

• V... DRAIN-TO-SOURCE

40

VOLTAG~

o

50

20

40

60

ag• TOTAL GATE CHARGE (nC)

(VOLTS)

Typical Capacitance V$. Drain to Source Voltage

80

100

Typical Gate Charge Vs. Gat.To-Sourca Voltage

10

-

_~ M~UR~D w~

-

CU"+T

PULSE OF 2.¥ DURATION

T~=25°C ~i.'
I~EATIN~ EmiCT OFI2 0,.. ,l"LSE I

5 - _w-lITlAl

MINIMAL)

6
5

V~~10~~

0

~

5

V

5

~

r--... ~FP440.1
IRFP 4421'

4

~VGS=20V

.,.., l./

0

-- - '"
r--.... ........
r--.... ..........

~

~

\~

2

I~

~

o

10

15

.20

25

30

35

40

45

50

ID. DRAIN CURRENT (AMPERES)

50

75

100

125

150

TA. AMBIENT TEMPERATURE ('C)

Typical On-Resistance Vs. Drain Current

Maximum Drain Current Vs. Case Tamperature

160
140

Ii>

120

f---"" ~

."\

S
'" 1d

;.
0

f5

I\.

"

..

~

60

.~

o
...

:

"

~

40

0

20

40

60

80

"'"
"'""I'\.
100

120

140

160

TA. AMBIENT TEMPERATURE ('C)

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

222

N-CHANNEL.
POWER MOSFETS

IRFP450145114521453
FEATURES
•
•
•
•
•
•
•
•

Low ROS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high Jemperature reliability
• TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

RDS(on)

ID

IRFP450

500V

0.40

13A

IRFP451

450V

0.40

13A

IRFP452

500V

0.50

12A

IRFP453

450V

0.50

12A

1---"- -

rf--

MAXIMUM RATINGS
Symbol

IRFP450

IRFP451

IRFP452

IRFP453

Unit

Drain-Source Voltage (1)

Characteristic

Voss

500

450

500

450

Vdc

Drain-Gate Voltage (RGS=1.0MO) (1)

VOGR

500

450

500

450

Vdc

Gate-Source Voltage

±20

VGS

Vdc

Continuous Drain Current Tc=25°C

10

13

13

12

12

Adc

Continuous Drain Current Tc=100°C

10

8.0

8.0

7.0

7.0

Adc

10M

52

52

48

48

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed

-

IGM

±1.5

Adc

Po

150
1.2

Watts
W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Total Power Dissipation @ Tc=25°C
Derate above "25°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width4lt300,.s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

ciS

SAMSUNG SEMICONDUCTOR

223

N-CHANNEL
POWER-MOSFETS

IRFP450/451 1452/453

, ' , !

.

.

ELECTRICAL CHARACTERISTICS
Characteristic ..

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

' VGS(th)

Type: Min Typ

-

V

VGs=OV

IRFP45J
450
IRFP453

-

V

10=250"A

4.0

V

Vos=Vas, 10=250,..A

100

nA VGs=20V'

-100

IRFP450
13
IRFP45,

-

-

A

IRFP452
~2
IRFP453

-

-

A

0.38

0.4

11

'ALL' '2.0

IGSS

Gate-Source Leakage Reverse

IGSS

ALL:

On-State Drain-Source
, Current (2)

loss

1010n)

ALL

IRFP450
IRFP45n
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRFP452
IRFP45$

-

-

0.4

·gfs

ALl. ; 6.0 10.8

Ciss

ALL·

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

C,ss

ALL:

Turn-On Delay Time

Ici(on)

ALL

t,

ALL

Fa" Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

td(off)

-_.

ALL

tf

ALL

I

;

.

nA VGs=-20V
"A Vos=Max. Rating,. VGs=OV,

1000 ,..A Vos=Max. RatingXO.8, VGs=OV, Tc"'125°C

VGS=10V,lo=7.0A

Forward Transconductance (2)

Turn-Off Delay Time

250

'

Vos>IO(on)XROS(on) max., VGS= 1OV

Input Capacitance

Rise Time

Test Conditions.

Max Units

-

ALL

Zero Gate Voltage
Qrain Current

(Tc=25°(; unless otherWise specified)

IRFP450
500
IRFP452

Gate-Source Leakage Forward

,

-

0.5

-

2850 3000

11

0

Vos>IO(on)XROS(on) max., 10=7.0A'
~-

pF

350

600

pF VGs=OV, Vos=25Y, f=1.0MHz

150

200

pF

-

35

ns

50

ns Voo=0.5BVoss, 10=7.0A, Zo=4.71l
(MO~FET switching times are essentially
ns· independent of operating temperatureJ

150
70

77

120

-

11

-

66

-

ns

,

Qg

ALL

Gate-Sour.ce Charge

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

'0.1

-

KlW Mounting surface flat, smooth,ant;! greased

-

80

KIW

THERMAL RESISTANCE

nC VGs=10V, 10=16A, Vos=0.8 Max. Rating
,(Gate charge is essentially independent of
nC
operating temperature. \
nC

,

Junction-to-Case

RthJC

ALL

Case-to-Sink

RthcS

ALL

Junction-to-Ambient

RthJA

ALL

I

,

-

0.83 K/W

Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widtM300"s, Dl;lty Cycle.. 2%
(3) Repetitive rating: Pulse width limit~d by max. junction temperature

c8

SAMSUNG SEMICONDUCTQR

"'~,24
"<,;',

N-CHANNEL
POWER MOSFETS

IRFP450/451 1452/453

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Type

Min Typ

IRFP450
IRFP451

-

IRFP452
IRFP453

Max Units

Test Conditions

-

13

A

-

-

12

A

IRFP450
IRFP451

-

-

52

A

IRFP452
IRFP453
IRFP450
IRFP451

-

-

48

A

1.4

V

Tc=25°C, Is=13A, VGs=OV

1.3

V

Tc=25°C, Is=12A, VGS';'OV

IRFP452
IRFP453

-

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

~

-

Reverse Recovery Time
ALL
1300
'ns TJ=150°C,IF=13A, dlF/dt= 1OOAl,..s
InNotes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth~300,..s, Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
20

~PulseTest

1.

Vos·5.5V

or

III

C--

a:

a:

...2

III

~

....Z

Vos=5V-

I--

~

....z
II!
a:

10

::>

::>

CJ

CJ

c

c

z

z

!

VG8""4.5V

R

12

/,

8

/!J

!

f--

I - - ~~~:~~;~c,

R

T"~155'C,

~GS-!,w- f-o

50
100
150
200
250
VOS, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

o

300

1

102

lOV

~

A r;
3

4

5

6

Typical Transfer Characteristics

v,. t"2 ~

~PulseTest

2

/II
tU

Vas, GATE-TD-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10

II

I

III

III

a:
a:

~=~~IJ

16

or

15

...2
III

,,
,

20

Vas-lOY

OPERATION IN THIS

~!RFP 450,1

AR""

ISUMITEDBY~

-IRFP 452,3

Voa=5V

6

, .~
~~

4

~

2

o

l/

"-

I

VG$,""45V

,,-

·z
~

'!' Ii

,oo,.s

SAMSUNG SEMICONDUCTOR

,

/
1.0

R

1
2
3
·4
VOS, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

'''',1

5

V. -4V

TypIcal Saturation Characteristics

c8

~,

IRFP 450,1

-IRFP 452,3

TJ _150°C MAX
Ru...::=O 83 KJW
st.IGL.E PULSE

11111111

2

5

I,~II

Tc -25°C

~
~

O. 1
1.0

10ma

IRFP 450,2

I I

11111111
2

IRFP 451,3

~

10
20
50
100 200 500
5
VOS, DRAIN-TD-SOURCE VOlTAGE (VOLTS).

Maximum Safe Operating Area

225

N-CHANNEL
POWER MOSFETS

IRFP450145114521453
I

I

T}a-55

~

16

V

j!

U

"0Z"

V/ V
JV
JI

i

5

2

TJ:;;:~

0

TJ -150'C

TJ =<25°C

~PulseTest

V~X~I'"

4

8
12
16
10. DRAIN CURRENT (AMPERES)

20

0.5

1

1.5

2·

2.5

Vso. SOURCE·TO,DRAIN VOLTAGE (VOLTS)

Typical Source-Drain Diode Forward Voltage

2.5

1.25

w

U

Z

1.15

z

~./

V

11"05

./

~j

~~ 0.95

..",

~

/

~

i-'

2.0

/

III

"
~s
w~

1.5

8i
~o

/'

~

I
"
o

40
80
120
T", JUNCTION TEMPERATURE ('C)

Breakdown Voltage Va. Te"!perature

ciS SAMSUNG SEMICONDUCTOR

160

0.5

/'

/

Z

0.85

-40

..,-V

... ~ 1.0

V

Q

0.75

V

~:J

I

~

I

'h

0

Typical Transcounductance Va. Drain Current

~

Ii

o. 1

o

g~

l ;Jl J

Jc

~~

l/ V i-"'"
1/V ,/' . /~
JV ./

12

~
~

!

10

20

f

I

V

Ves -10V
lo"7A-

I

-

o
-40

0

40
80
120
T", JUNCTION TEMPERATURE I'C)

160

Normalized On-Resistance Vs. :remperature

'(226

N-CHANNEL
POWER MOSFETS

IR'FP450/451 1452/453
5000

25

v..!o

'=1 MHz

~

~:~~d+I~'

4000

\

\

i

0
~

Coss=Cds+ CgsCgd
Cgs+Cgd
acds+Cgc\

"!:i

g

c..

~ 3000

20

w
c
15

§

~

~ 2000

U

Vos=25OV~

1000

1\
\' """-

10

Coos

10
20
30
40
Vos. DRAIN-TOoSOURCE VOLTAGE (VOLTS)

50

O. 8

'"

YI

V

5

V

4

V

56

84

112

0.. TOTAL GATE CHARGE InC)

.)

12

1'-"
........

~I '
.......

'

~"

9

'"

i"-... """ ,1ft'P

450,1

IRFP452~ ~

V

6

b..; ~

I" ~

'\

3

EFFrr OF

a

10

t

0jAS jUlSE

i

I

MINljAL)

20
,30
40
ID. DRAIN CURRENT (AMPERES)

,50

Typical On-Resistance Vs. Drain Current

,

~

RDSI,",I MEASURED WITH CURRENT PULSE OF
2.D,18 DURATION INITIAL TJ -25 G C (HEATING

3

140

15

j
0, 6

28

Typlcel Gate Charge Vs. Gat..T~urce Voltage

v~-'r~
Vr;.s-2OV
0, 7

ID ""16A

o

Typical Capacitance Vs. Drain to Source Voltage

15

~

V

: /L
:/

"'"

a

i

-;

Voe==400V

~

(j

I

VDSoa 1oov

~
:::>

a

25

50

75
100
125
Te. CASE 'rEMPERATURE (OC)

150

Maximum Drain Currant Vs. Case Temperature

160
14a

~

120

!15

10a

!.i

60

I
~

i

t-- ~

"' I\.
'\

'\

'\.

a
4

a
a
a

20

40

'"

I\.

60
80
100
120
T" CASE TEMPERATURE (OC)

\..
140

160

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

227

N-CHANNEL
POWER (fA,O~fETS

,.IRFS10/.51115121513
FEATURES
•
•
•
•

•
•
•
•

Low ROS(on).
Improved induct.ive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TG-220

PRODUCT SUMMARY
Part Number

Vos

ROS(onl

10

IRF51.o

1.o.oV

.0.601

4 ..oA

IRF511

6.oV

.0.601

4 ..oA

~
'D

G
IRF512

1.o.oV

.0.801

3.5A

IRF513

6.oV'

.0.801

3.5A

.

.'

S

MAXIMUM RATINGS
. Symbol.

IRF510

IRF511

IRF512

IRF513

Unit

Drain-Source Voltage (1)

Voss

1.0.0

6.0

1.0.0

6.0

Vdc

Drain-Gate Voltage '(RGS= 1 ..oMO~ (1)

VOOR

1.0.0

6.0

10.0

6.0

Vdc

Characteristic

Gate-Source Voltage

±2.o

VGS

Vdc

10

4 ..0

4 ..0

3.5

3.5

10

2.5

2.5

2 ..0

2 ..0

Drain Current-Pulsed (3)

10M

16

16

14

14

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

2.0
.0.16

Watts
W/~C

TJ, Tstg

-55 to 15.0

°C

TL

3.0.0

··C

. Continuous Drain Current T6=25°C
Continuous Drain Current Tc = 1 .0.0 °C

Operating .and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Adc

,

Adc
.Adc

Notes: (1) TJ=25°C to 15.o o C
(2) Pulse. test: Pulse width"3.o.oj./S, Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

.=8

SAMSUNG SEMICONDUCTOR'

.228

I

'

N-CHANNEL
POWER MOSFETS'

IRF510/511/512/513
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

ALL

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

10(on)

ROS(on)

. Forward Transconductance (2)

IRF510
IRF511

VGs=OV

2.0 - - - - 4.0 -

-

V

10= 250",A
Vos;=VGS, 10=250",A

V
nA

VGS=20V

-100

nA

VGs=-20V

250

",A

Vos=Max. Rating. VGs=OV

1000

,..A

Yos=Max. RatingXO.8. VGs=OV. Tc=125°C

-

A
Vos>IO(on)XROS(on)
A

IRF51 0
IRF511

-

0.4

0.6

11

IRF512
IRF513

-

0.6

0.8

11

-

0

150

pF

ALL

1.0 1.6

td(off)

ALL

,-

ALL
ALL

Reverse Transfer CapaCitance

Crss

ALL

Turn-On Delay TIme

td(on)

ALL

f,

ALL

max .•

VGs=1 OV

II

VGS=10V.10=2.0A

gt.
Ciss

Fall Time

4.0
100

-

Coss

Turn-Off Pelay Time

V

-

Input CapaCitance

Test Conditions

-

IRF512
3.5
IRF513

Output CapaCitance

Rise Time

Max Units

-

IRF511
60
IRF513
VGS(tN

Static Drain-Source On-State
Resistance (2)

Min Typ

IRF51 0
100
IRF512

Gate-Source Leakage Forward

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise specified)

145
90

100- pF

20

25

pF

-

20

ns

25

ns

25

ns

20

ns

Vos>lo(on)XROS(on)

max .•

10=2.0A

VGS=OV. Vos=25V. f=1.0MHz

Voo=0.5BVoss. 10=2.0A. Zo=50 11
(MOSFET switching times are essentially
independent of operating temperature)

tt

ALL

Total Gate Charge
(Gate-Source' Plus Gate-Drain)

Qg

ALL

-

4.7

7.5

nC

Gate-Source Charge

Qgo

ALL

Qgd

ALL

2.8

-

nC

Gate-Orain ("Miller") Charge

-

1.9

-

6.4

K/W

1.0

-

K/W Mounting surface flat. smooth. and greased

-

80

K/W Free IIJr Operation

VGs=10V. 10=5.0A. Vos=0.8 Max. Rating
(Gate charge is essentially independ.ent of
operating temperature)

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to'Sink

Rlhcs

ALL

Junction-to-Ambient

RthJA

ALL

-

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widthci;300",s •. Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

229

N-CHANNEL
POWER M.oSFETS

'IRF51'OI51 1'15121513

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol

Characteristic
Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Reverse Recovery Time

Type Min Typ
IRF510
IRF511

-

IRF512
IRF513
iRF51 0
IRF511
IRF512
IRF513
IRF51 0
IRF511
IRF512
IRF513

Max Units

Test Conditions

-

4;0

A

-

3,5

.A

-

16

A

-

14

A

-

2.5

V

Tc=25°C, Is=4.0A, VGs=OV

-

2.0

V

Tc=25°C, Is=3,5A, VGs=OV

G!J

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

-

ns TJ=150°C, IF=13A, dIF/dt=100Al",s
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width.. 300",s , Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
ALL

9. 6

8. 81- ~,,-1OV-

r-

230

8. 0
8o,.sPUser... -

-

VGSi 9V - -

7. 2

8. 0

~

f

6.4

!

5. 6

I
\,)

Z

C

!§
oS

I

I

~
$

I
• Vos=7V

48

4. 0

Ii

I

,

vGSJev

3. 2

1.6

I

0.8

.TJ... 25O~~

4. 8
4. 0
3. 2

I

1/

6

Ift=..~J=125OC
TJ "'25°C

o. 8

10
0
30
40
50
Vos, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

60

r--

/
ir

II

16

GIJ

.",..I"""L

6.4

S

. V=10"'/-

/
V

~

1.5
9.0
VGS, GATE-TD-SOURCE VOLTAGE (VOLTS)

'-

.v"Jv-:

10

OPERATION IN THIS
AREA IS UMITED
BY Roo",,!

5

1

I

/

VGS=7V

_I~C:~

100,s

.::'' 1'2'13

I

YGS-4V

SAMSUNG SEMICONDUCTOR

' ...

~"

2
"
O~~'_25.C

lms

' "

FTJ=150°C MAX.

5~~c=64KfW

r-S'"f"rill

I
1
2
3
4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

lo,.s

r-IRF510, 1

v08'.6v -::

1
vGSoJv_

~:=

O~;F512,3

I

Typical Saturation Characteristics

c8

Typical Transfer Characteristics

,

J
o

I

~45~-r-55·1
3.0
6.0
7.5

Typical Output Characteristics

8.0

IJ
I

j

2. 4

Vas-4V

o

'f

TJ"'-55°C~

13
S

Vas.Jsv

IIJ
if/

T,~lJ •. C'-

5. 6

i

t
2i

I

V'

2.4

Lst

Pulse
Vos>\DIonIXA08(anI .....

6. 4

vasJev

7. 2

r--aL

o.

:

1.0.2

"I

10ms

, IRF511 , 3

lOOms
DC
JRF51d,2

5
10 20
50
100 200 500
Vos. DRAiN-TD-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

10.5

N-CHANNEL
POWER MOSFETS

IRF510/511/512/513

.!__

J

I

ffi

~-1.o:m_ _

a:!::

h!-

I- Z

~~

0.5

~~
~...WZW(J

"""

~~~~+++Ht-1-t--r~~~~~~i~~~~~~~~--~~~~-+-t-+-t++tH+--rt--rti~tH
1~0"~Ol~2'~~~~~~~~td~~~~~~~~-+~t+tH+-4-+-~t+++~--~--~-W~~-+~-+~~~

0.21"'- .

~ ~ i~D_~o~llli~"'!""llliiiiiiiiilii
~!0.1

:I
a:
~

;i
~

~~

_~

\

N

~

0 .. 0.

0.05

NOTES

~

----j

"--I,. .

~..i/._-_O.+02""''''F-1-+3,,*,.SlNGLE PULSE (TRANSIENT -++-4++++tIt--rt--rH+tttt--H- 1 Duty Factor. O...l!.lJ'
TH~"':'AL T'MPTED~~I. ..
,
~=o 01
I I
I I I I II
2. Po, UM .... _""'; ••.• Deg. C/W.
0.02
JL
3. TJ~Tc=PDlolZtIIJC (t).

I I 1111

o.Ot:.A'1
10-11

10....

5

llJl.llli I I I I I II

10-3

2

5

10-J

2

5

10- 1

10

11. SQUARE WAVE PULSE DURAliON (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

.

4. 0
3.

6t--r--.L p"l

10
Tos'

5

VD9>lD(onIX~"'I,"""

3. 2

2

iii

~
~

~

Ii

0

2. 4

1 .6

t

1.

2

0.8

o.

lL .....

t,..-

IV I.".....- .....

Ii V

4~

J-25°C
TJ

2

"'2d c

0

5

1.6

5.6 6.4

2.4 3.2 4.0 48
10. DRAIN CURRENT (AMPERES)

7.2

o

8.0

1.15

- ~i5 1.05

.,. ~

i~

.

~~0.95,."

~

~

l

"'"

~

i--"""

L

0.2 0.4 06 0.8 1.0

1.2 1 4 1.6 1 8 2 0 2.2 2.4

Vso. SOURCE-T()O!)RAIN VOLTAGE (VOLTS)

Typical Source-Drsln Diode Forward Voltage

I
~S
~~

40
80
120
T,. JUNCTION TEMPERATURE (OC)

SAMSUNG SEMICONDUCTOR

.,V

1.5

8i

r

60

J

a

2. 0

a::::l

~

Breakdown Voltage Vs. Temperature

c8

~.

0.85

0.7 5
-40

I

o. 1

2. 5

I

~~

TJ -25°C

t--.Tr150°C

1.25

a:a:

1

o

Typical Trsnscounductance Vs. Drsin Current

~

I

TJ ""'150°C

5

2

0.6

g

T'~

TJ -5 ·C

2. 0

1
~

,.....
".

2. 8

./V

1.0

L

L.

V

~

0.5

a
160

V

-40

~?OVr
o

40
80
120
T,. JUNCTION TEMPERATURE (OC)

160

Normalizad On-Resistance Vs. Temperature

231

,N-CHANNEL

POWER MOSF#5TS

I,RF,510/5111512/513
50

5

v~t

400

\

""",+g:+Cgd~

,\
\

0

100

VDS""~DV,

r----

5

"

.........

\

I

cl

.........

10

/

5

30

40

50 .

o

Typical Capacitance Va. Drain'to Source Voltage

i

I;r·'~ I-:-

V

2

,

V"; DRAIN-TO-SOURCE VOLTAGE (VOLTSI

20

"

/

enos
20

~V

i>""
/. ~

c..

-

o

Vm=~"
V",=8ov,~

0

\ "-

\

".

0

f-1 MHz
g:c-Cgs ....Cgd. Cds SHORTED
C =Cgd
Coss=Cds+ CgsCgcI

4

8

oj,. TOTAL GATE 'CHARGE (nC)

8

Typical Gate C"-rge Va. ,Gat.T~uree Voltage

M.LREJ WITH LRREL-

PULSE OF 2.0f'8 DURATION

;~~.,!3-~~ OF 2~o,.s- -

vosJ 1OV

2

3

8

4

I'....

r-.... :-~'

IRF510, ,

,!.::~ t--....
..... ~

2

f--

o

5

L/

....... I-V~=2OV

10

15

o

20

25

5

'\

~

'\

5

""

r\

20

40

60

80

100

~

120

~

j

25

50

75

100

Maximum Drain Current Va. Case

1\.'
r\.

.........

125

150

TA. AMBIENT TEMPERATURE ('CI

Typical On-Resistance Vs. Drain Current

'\

"

1

....-~

I.. DRAIN CURRENT (AMPERESI

0

-

........

PU1LSE (8 MINIMALl

140

T•• AMBIENT TEMPERATURE ('Cl

Power Va. Temperature Derating Curve

160

T.~peratur.

,

N-CHANNEL
POWER MOSFETS

IRF52.0/521 1522/523
FEATURES
• Low RDS(on)

•
•
•
•
•
•
•

TO-220

Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability.
T~220 package

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF520

100V

0.300

8.0A

IRF521

60V

0.300

8.0A

IRF522

1·00V

0.400

7.0A

IRFS23

60V

0.400

7.0A

MAXIMUM RATINGS
Symbol

IRF520·

IRF521

IRF522

IRF523

Unit

Drain-Source Voltage (1)

Voss

100

60

100

60

Vdc

Drain-Gate Voltage (RGs=1.0MOI (1)

VOOR

100

60

100

60

Vdc

Gate-Source Voltage

VGS

Characteristic

Continuous Drain Current Tc=2SoC

Vdc

±20

10

8.0.

8.0

7.0

7.0

Adc

10

5.0

5.0

4.0

4.0

Adc

Drain Current-Pulsed (3)

10M

32

32

28

28

Adc

Gate Current-Pulsed

IGM

±1.S

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

40
0.32

Watts
W/oC

TJ, Tstg

-55 to 150

°C

TL

300

Continuous Drain Current Tc=100°C

Operating and Storage
Junction Temperature Range·
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

.

°C

Notes: (1) TJ=25'C to 150'C
(2) Pulse test: Pulse width<;;300"s, Duty Cycle<;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG. SEMICONDUCTOR

233

N-CHANNEL

IRF520/521 1522/523

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

BVoss

Type

Min Typ

Max Units

Test Conditions

iRF520
100
IRF522

-

-

\J

VGs=OV

iRF521
60
IRF523

-

-

V

10=250"A

VGS(Ih)

ALL

2.0

-

4.0

V

Vos=VGS, io=250"A

Gate-Source Leakage Forward

IGSS

ALL

nA

VGs=20V

IGSS

ALL

-100

nA

VGs=-20V

250

"A

Vos=Max. Rating, VGs=.OV

1000

"A

Vos=Max. RatingXO.B, VGs=OV, Tc=125°C

IRF520
B.O
iRF521

-

100

Gate-Source Le?kage Reverse

-

IRF522
7.0
IRF523

-

Gate Threshold Voltage

Zero Gate Voltage
Drain Current

I

Symbol

(Tc=25°C unless othurwise specified)

loss

On-State Drain-Source
Current (2)

~ "'.o-So~
Resistance (2)

10(on)

ALL

IRF520

O.S.... ROS(on) IRF521
IRF522
IRF523

-

ALL

1.5 3.1

ALL

Output Capacitance

Coss

ALL

-

ALL
ALL

tr

ALL

td(off)

ALL

tf

ALL

Qg

ALL

Gate-Source Charge

Qgs

ALL

Gate-Drain ("Miller") Charge

Qcid

ALL

Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

VDS>lo(o~)XRos(o~) max., VGs=l OV

0
VGs=10V,lo=4.0A

gfs

Crss

A

0.30 0.40

CiS~

td(Oh)

-

0.23 0.30

Forward Transconductance (2)

Reverse Tran.sfer Capacitance

A

-

Input Capacitance

Turn-On Delay Time

-

-

0
(J

460

600

pF

220

400

pF

70

100

pF

-

40

ns

70

ns

100

ns

70

ns

9.B

15

nC

3.5

-

nC

6.3

-

3.12

K/W

Vos>lo(on)XRoS(on) max., 10=4.0A

VGS=OV, Vos=25V, f=1.0MHz .

Voo=0.5BVoss, lo=4.0A, Zo=500
(MOSFET switching times are essentially
independent of' operating temperature.l

VGs= 1OV, 10= lOA, Vos,,;O.B Max. Rating
(Gate charge is essentially independent of
operating temperature.l

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-te-Sink

RthCS

ALL

RthJA

ALL

I--

Junction-to-Ambient

-

1.0

-

K/W Mounting surface flat, smooth, and greased

-

BO

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300"s, Duty Cycle';;2%
. (3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDuCTOR

N-CHANNEL
POWER MOSFETS

IRF520152115221523

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol

Type

Continuous Source Current
(Body Diode)

Is

IRF520
IRF521
IRF522
IRF523

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSO

Characteristic

Min Typ

-

IRF520
IRF521
IRF522
IRF523
IRF520
IRF521
IRF522
IRF523

Max Units

Test Conditions

-

8.0

A

-

7.0

A

32 .

A

28

A

2.5

V

Tc=25·C,.ls=8.0A, VGs=OV

2.3

V

Tc=25·C, Is=7.0A, VGs=OV

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

~
,

-

Reverse Recovery Time
ALL
280
ns TJ= 150·C, IF=8.0A, dlF/dt=1 OOAl,..s
trr
Notes: (1) TJ=25·C to 150·C (2) Pulse test: Pulse width"300,..s, Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
24

~GS=10V

II

20

.......

iil

""

....
...z

0:
0:

BO,..s Pulse Test

16

l

I--

VGS 9V

S

16

vGS1ev

I

:&
~

20

I

I--

...iilz
...
""

:&
~

12

vas

l7V

I--

...z
...

8O~ Pulse Test

-

_ Vos>IDlonIXRo&onl

0

j

TJ ""-55°C

12

0:

0

0:

Q

S
Vas

S

lsv

I-_~~:~~~~C,
T'~1-55~

Vas""4V

o

10
20
30
40
50
VDS, DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10
ao,s

Pu~ Test

I

6

!J

I

J
II

W

4

6

8

12

14

Typical Transfer Characteristics

10 2
OPERAT1ON IN THIS
AREA IS UMITED

--8V

,-

BY

r..!R~,!'
r-IRF522.3

Rost,.,)

I I~

vGS-ev-

,

10,..

1==1R.520,1

100,..

V
1=~622,3

"-

E,-25'
F;J-150°CM_

Vos=5V

,

I.

I IIIII
VG9=4V

o. 1
1
2
3
4
Vos, DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

Saturation Characteristics

SAMSUNG SEMICONDUCTOR

1.0

2

llllill

lms

10ms

f=~~~~~

Typl~al

10

Vas. GATE-TQ-SOURCE VOLTAGE (VOLTS)

.

j

2

o

2

V

If

I

60

t::.J

~ I'--.. t--7V
-"or

14

c8

1. ~

IOV'

I--

C

Vas=.6V

Q

I

~T'~125'C_ I - -

1/ I"::T'~:25'C
I
I

"z

I

~

0:

i

rM>I

II:

"

III
WI

J.

100ms

D.C
IRF521,3

IRF52Q,2

II

5
10
20
50
100 200
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Max:!mum Sale Operating Area

235

N-CHANNEL
POWER MOSFETS

lRF520/521 1522/523
JE

!e:2__

\

1.0

~= o.

5

~~
w Z
Ii3g

0.2

~!

o. 1

.~~

lIE
0:,.....

~

.~

0-01

!l!

o

005

.0 0.02

A

:::::; ~II"'"

-

0=0' 2'

1 0 .0 5

J>-

-

0-0

t;~

~

NOTES

IrLfl
~.~

SINGLE PULSE (TRANSfENT _
THERMAL IMPEDANCE)

0=001

J-.1""

0.02

Quly Factor D=~

1

1.
2 Per Unit Base=Ro.,JC=3 12 Deg efW
3 r.Jl,l-Tc""p~ZIhJC It)

0.0 1

10-1

5

2

10~

5

10-3

2

5

10-2

11 Lilli' -.11 1l-.lll
2

5

10-'

2

11. SQUARE WAVE PULSE DURATION (SECONDS)

5

2

1

5

10

.

Maximum Effective Transient Thermal Impewlnce Junction- to-Case Vs. Pulse Duration

5

V ...

4

~

V V
V
V V

3

~

--

103

I-

TJ--55°C

l - i"'""

TJ=25°C

5

2
TJ=125°C

,

II V

5r-

rl

2

80jd1 Pulse Test,_

TJ=1S0DC

~

2

1(.

VOO>'-X _ _

1/

T, 25°C

.

0

r--

5

1

r2r-

Tr150°C
TJ=25°C

J

1.0
4

0

8

2

16

o

20

2

3

4

5

6

VO~TAGE (VOLTS)
Typical Source-Drain Diode ForWard Voltage

I •• DRAIN CURRENT (AMPERES)

V"'; SOURCE:iG-DRAIN

. : Typical Transconductance Va. DrIIln Current

1.2 5

2. 5

w

~

o
>

.~

1.1 5

i

::161.0 5
Ww
i~

".

w,.
~I

I
S~ 0.95 , . .

V

V

i-""'"

....... ~

~~

1.5

~iS

~s~

. / -'

...

"

0.85

I

07 5

J

40

o

40

80

120

T J. JUNCTION TEMPERATURE (OC)

Breakdown VOltage Vs. Temperature

SAMSUNG

SEMICO~DUCTOR

160

V

l/~
L

1.0

I

i

V

0:'"

6-

ciS

i

2.0

/'

",- V

VG8=10V

ID~4A-

i--"""

r--

0.5

o
-40

0

40

60

120

160

TJ. JUNCTION TEMPERA:ruR~(OC)

Normalized On-Raslstance Vs. temperature

;236

'N-CHANNEL
POWER MOSFETS

IRF52'0/521 1522/523
1000

5

~,,-?,
1=1 MHz

Ct
eg,+Cgd
a Cas +

~::~iCgd
800

SHORTEO

COss=Cds+ CgsCgd
CQd

i

:'lZ

1\

600

ISc

...
C

VI)S=20V

Vos.!sov ..... ~V

\ "-

c

\

400

'

"'"
0

\ ."\

()

Ii
200

- r--V,,08OV.'RFli202

........ r-

II

--

r--....

r--

I
0

10.

20

30

~

W

40

50

/
o

ID =10A

/
4

8

12

16

20

V... DIIAIN-TQ..SOURCE VOLTAGE (VOLTS)

0.. TOTAL GATE CHARGE (nC)

Typical Capacitance Va. Drain to Source Voltage

Typical Gate Charge Vs. Gat..To-Source Voltage

10

1.0

f

.~

0.8

z

~
illa:

--

V.-1OV

0.8

6 .

..
Z
0

.........
.........

'"""'" ~
I'-... :::--

i
I!i

K520,1

IAF522,~",

()

!0

0.4

J

.....-::

0.2

4

-

~

I

10F i""" P,LBE i M'NlMjLI
a

10

20

30

I

40

50

10. DRAIN CURRENT (AMPERES)
Typical On-Reslstance Vs. Drain Current

35

"

\,.

5

\

I'\.

0

5

o

"

~

20

40

80

80

"'\,

100

120

140

TA. AMBIENT TEMPERATURE ("C)

Power Va. Temperature Derating Curve

=8SAMSUNG SEMICONDUCTOR

:'\

2

0

25

50

75

100

125

150

Maximum Drain Current Va. ·Case Temperature

\.

0

r" ~

TA. AMBIENT TEMPERATURE ("C)

'\

5

~ r-....

VG812°V

Roston! MEASURED WITH CU~ENT PULSE OF
2 o,a DURATION INITIAL TJ=25°C (HEAllNG-

a:

40

II

8,"""",

()

160

N-CHANNEL
POWER IV/OSFETS

IRF530/531 1532/533
FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO-220 .

PRODUCT SUMMARY
Part Number

.VDS

RDS(on)

ID

IRF530

100V

0.1 all

14A

IRF531

60V

Q.181l

14A'

IRF532

100V

0.251l

12A

IRF533

60V

0.251l

12A

MAXIMUM RATINGS
Characteristic

Symbol·

IRF530

IRF531

IRF532

IRF533

Unit

Drain-Source Voltage (1)

Voss

100

60

100

60

Vdc

Drain-Gate Voltage (Roo"" 1 .0MIl) (1)

VOGR

100

60

100

60

Vdc

Gate-Source Voltage

Voo

Continuous Drain Current Tc""25°C

Vdc

±20

10

14

14

12

12

Adc

10

9.0

9.0

8.0

8.0

Adc

Drain Current-Pulsed (3)

10M

56

56

48

48

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc""25°C
Derate above 25 ° C

Po

75
0.6

Watts
W/oC

TJ, Tstg

-55 to 150

°C

·TL

300

~C

ContinuouS Drain Current Tc"" 1 00 ° C

Operating and Storage
Jun,ction Temperature Range
. Mal\imum Lead remp. for Soldering
Purposes, 1'/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
.
(2) Pulse test: Pulse width<300,.s, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

238

N-CHANNEL

IRF530/531 1532/533

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Drain-Source Breakdown
Voltage

BVoss

Gate Threshold Voltage

Min Typ

-

-

V

VGs=OV

IRF531
60
IRF533

-

V

10= 250llA

4.0

V

Vos=VGS. 10=250"A

100

nA

VGs=20V

-100

IRF530
14
IRF531

-

-

A

IRF532
12
IRF533

-

-

A

VGS(th)

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

--.

Zero Gate Voltage

loss

t~"~

On-State Drain-Source
Current (2)

10(on)

-

Static Drain-Source On-State
Resistance (2)

Forward Transconductance (2)

ROS(on)

gfs

Input Capacitance

Ciss

Output Capacitanqe

Coss

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

--

Rise Time

tr

Turn-Off Delay Time

--

Fail Time

td(oft)
tf

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

Gate-Source Charge

Q go

I Gate'Drain

("Miller") Charge

Qgd

Test Conditions

Max Units

IRF530
100
IRF532

Gate-Source Leakage Forward

- - I---

I

Type

(Tc=25°C unless otherwise specified)

ALL

---

nA

VGs=-20V

250

"A

Vos=Max. Rating. VGs=OV

1000

IlA

Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

Vos>IO(on)XROS(on)

IRF530
IRF531

-

0.10 0.18

0

IRF532
IRF533

-

0.20 0.25

0

ALL

4.0

max .•

--

VGS= 1 OV

VGs=10V.10=8.0A

5.5

-

- 680 800
ALL
- 300 500
ALL
- 100 150
ALL
- - 30
. _ - - + -ALL
- - 75
---'40 .
ALL
,---- ALL
45
ALL
- 18 30
ALL
- 6.0 ALL
- 12.0 ALL

0

Vos>IO(on)XROS(on)

max .•

10=8.0A

pF
pF

VGs=OV. Vos=25V. f=1.0MHz

pF
ns
ns
ns

Voo=0.5BVoss. 10=8.0A. Zo= 15 0
(MOSFET switching times are essentially
independent of operating temperature)

ns

-

nC
nC

VGs=10V. 10=18A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)-

nC

THERMAL RESISTANCE
RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

Junction-to-Case

-

-

1.67

1.0

-

K/W Mounting surface flat. smooth. and

-

80

K/W Free Air Operation

K/W
grease~_

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300"s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

ciS

SAMSUNG SEMICONDUCTOR

239

N-CHANNEL
POWER'MOSFETS:

IRF530/5311532/533'
,

,

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

;

Continubus Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Type

Min Typ

IRF530
IRF531

-

IRf532
IRF533

-

IRF53o.
IRF531
IRF532
IRF533
IRF530
IRF531
IRF532
IRF533

Reverse FlecQvery Time

-

Max Units

Test Conditions
i

14

A

12

A

56

A

48

A

2.5

V

Tc=25°C •.ls=14A. VGs=o.V

2.3

V

Tc=29°C. Is=12A. VGs=o.V

~J

Modified MOSFET symbol
showing .the integral
rever~ P-N junction rectifier

,

-

ALL
'360.
ns TJ=15o.oC. IF=14A. dIF/dt=1o.o.A/,.s
trr
Notes: (1) TJ=25°C to 15o. oC (2) Pulse test: Pulse width"3o.o.,..s. Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max, junction temperature

,

20

. ·24 , V .... 10Y
VGSj8V

so..s PulSe Test

-

,

VOS>Ioo.oniXADS=t0v;';Vos"'TV

l

,

10

vQS=-ev

OPERATION IN 11-118 AREA IS UMITeD BY R

1FIF530,1

5

V

tRF632,3

2

J

10,..

IRF53Q,l

"

\

VGB-SY-

V

If

/

100,..
1m.

/

II

9

Typical Tr.nsf~. Charactarlstlcs

1RF532,3'

I

!
6

Vas. GATE-TD-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

. J""P'';''Test

': '

..,a 'I

Vas=4V

10

~

1//

j

0

J

II

~
i!i

I
4

I

8014 Pulse Test

20

I

r- Tc""25°C

DC

1--""".,67K1W
r-~NGl'r'i'fi

2

.cgSAM~~NG'SEMICONDUcrOR

2.0

''''

100m.

O. 1
0.4
0.8
1.2
1.6
Vos, DRAIN-TO-SOURCE VQLTAGE (VOLTS)
Tvoical Saluratio/! Characterlstf!:~

"

10mS

~
i,10

5 ~!J"1500C MAX

Vos-4

,

5

10 ,2

JII II
5

'

I""n
10

20

.

lR~',2
50

100 200

500

vaS. DRAIN-To-SOURCE VOLTAGE (VOLTS)
Maximum. Sal. OperatlngAraa
""(' ,

N-CHANNEL
POWER MOSFETS

IRF5301531 15321533
I

2

!I

-

!

I

,

,

obb:
5 -D~O'
D~O 2

2

o

0-002

I

_..

5~~'

1-_

t-

-~

i-

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

t-.+- .

--

I--

tt-

--

-

1

r-r-

-,

I

,

NOTES

IILJL

I

p~

t--+-:.

I-

t-

I-

t;-

,

p.-i

1 Duty Factor D=..!!...
1,

2 Per Umt Base==Rtr.JC""
3 TJM-Tc=PDMZ,nJC (I)'

1

-.

67 Deg C/W

.1 J.l.llli' 11 1J.l.il

5
10
2
5
10
2
5
10-,
11. SQUARE WAVE PULSE DURATION (SECONDSI

101

,

,

,

Iii'"

f- ~':.I::::

.;-!.OO.

1

k !:;;!iii"

I-

01

10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

.

a

10

T~--55!C
8

f

I,

. . .V

6

a

~

I-- 10-

V/ ~ I--"

T!=2·L

2

1...J~

0

W\/i""

4

2

1./I-- ""'"

TJ 2S C
Q

5

TJ=150°C -

~

'f

5
2

i(/

Vos>lo.""'XAosw,,,_
80 ¢J Pulse Test

II
IV

r----

0
5

.TJ=150°C

I

2

Ir

5

10

15

20

25

I I

o1

0.5

I., DRAIN CURRENT (AMPERESI

1

1.5

2

2.5

Vs•• SOURCE-To-DRAIN VOLTAGE (VOLTSI

Typical Transcounductance Vs_ Drain .Current

Typical Source-Drain Diode Forward Voltage

2. 5

1.2 5

5

0

L,...- ~

j....-" V

5

"...
5 ......

TJ =25°C

1./

.L

5

V

V

~

./

",..
./

./

V

V

".
5

5
VG/iJ-10V

lo a SA

07 5
-40

o

0
40

80

120

T... · JUNCTION TEMPERATURE (OCI

Breakdown Voltage Va_ Temperature

ciS SAM~UNG

SEMICONDUCTOR

160

40

0

40

80

120

180

T... JUNCTION TEMPERATURE (OCI
Normalized On-Reaistance Vs_ Temperature

241

N-CHANNEL
POWER MOSFETS

IRFS30/S31is32/S33
25

2000
Vos=O
1=1 MHz
CISSIIICgs+Cgd, Cds SHORTED

I

C",,~Cgd

1600

I

Coss"Cds+~

Cgs+Cgd

~

~+Cgd

i o,
w 120

5

l\

o"'!
O

,\

800

l\

.....

\\

400

-

--

\

o

~ V'

if

/
o

C""

VDS.

IRF530, ~

hV'

Qss

Cass

10

.

- ~::~~~~
vos""aov,

20

30

DRAIN-TO-SOURC~

40

50

/

VOLTAGE (VOLTS)

Typical Capacitance Vs. Dr~in to Source Voltage

1c=18A

8

16
24
32
a g• TOTAL GATE CHARGE (nC)

20

0.5

_ I ME.JRED

4-

~'TH CJRRENTI PULSE1OF

2 ~s DURATION INmAL TJ=25°C. (HEATING
EFFECT OF 2 O.us PULSE IS MINIMAL)

16

iii

I

w

...:&
...z~
W

VGS =10V

w

III::>
0

2

_V

........

IE

3

12

...... r--..... ..........
r--..... r--... r--.....
...... r--..... ........ .........
IRF532.~
IRF530,1

, r0

~

J

IE
C

R

VGI; s 20V

1

~

.1
1
0

10

20
30
40
ID. DRAIN CURRENT (AMP~RES)

50

Typical On-Resistance Vs. Drain Current

80
70

~

80

li

50

~

!Ii

40

I

30

~

,f

-

0 25

50

100
125
75
T,. CASE TEMPERATURE ('C)

~

"
10

Maximum Drain Current Vs. Case Temperature

~

.... 1\.

" '\
\.

''\.

0

'\.
I\.

10

o

40

Typical Gate Charge Vs. Gat.To-Source Voltage

20

40
80
80
100
120
Te. CASE TEMPERATURE ('0)

\.

140

160

Power VI. Tamperalure Dar.llng Curva

c8

SAMSUNG SEMICONDUCTOR

242

N-CHANNEL
POWER MOSFETS

IRF540/541 1542/543
FEATURES
• Low ROS(on)
• Improved inductive ruggedness
•
•
•
•
•
•

TO-220

Fast switching times
.
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

PRODUCT SUMMARY
Part Number

Vos

ROS(on.

10

IRF540

100V

0.0850

27A

IRF541

60V

0.0850

27A

IRF542

100V

0.11.0

24A

IRF543

60V

0.110

24A

~-

II

~-

MAXIMUM RATINGS
Symbol

IRF540

IRF541

IRF542

IRF543

Drain-Source Voltage (1 )

Voss

100

60

100

60

Vdc

Drain-Gate Voltage .(RGs= 1 .OMO) (1)

VOGR

100

60

100

60

Vdc

Gate-Source Voltage

VGS

Characteristic

±20

Unit

Vdc

Continuous Drain Current Tc=25°C

10

27

27

24

24

Continuous Drain Current Tc = 1 00 ° C

10

17

17

15

15

Adc

Drain Current-Pulsed (3)

10M

108

108

96

96

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc,;,,25°C
Derate above 25°C

Po

125
1.0

Watts
W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Adc

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300,..s, Duty Cycle,,2%
. (3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

243

N-CHANNEL
RQWERMO$Ff,rS

JRFS401541 15421543
ELECTRICAl,. ,CHARACTERISTICS
Characteristic; ,

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

S~mbol

BVoss

fype

Min Typ

V

IRF541
60IRF543

-'

-

V

10=250"A

4.0

V

Vos=VGS, 10=250"A

IRF540
27
IRF.541

-

IRF542
24
IRF543

-

Gate-Source Leakage Forward

IGSs

ALL

Rev~rse

IGSS

ALL

loss

ALL

-

10(on)

Test Condltion!il

-

2.0

On-State Drain-Source
Current (2)

Max Units

-

ALL

Zero Gate Voltage
Drsin Current

unl~ssotherwise specified)

IRF540
100
IRF542

VGS(th)

Gate-Source Leakage

(Tc ... 25°C

VGs=OV

,:.'

"

100

nA

VGs=20V

-100

nA

VGs=-20V

250

/AA

Vos=Max. Rating, VGS=OV

1000 ,.A

-

A

-

A

Vos=Max. RatingXO.8, VGs=OV, Tc=125"C

Vos>lD(on)XROS(on) ,""x., VGs= 1 OV' ,

,

IRF540
IRF541

Static Drain-Source On-State
ROS(on)
Resistance (2)
IRF542
IRF543
Forward Transconductance (2)

gf.

ALL

Input Capacitance

Ciss

ALL

Output Capacitance

CosS

ALL

Reverse Transfer Capacitance

Crss

ALL.

Turn-On Delay Time

Id(on)

ALL

t,

ALL

td(olt)

ALL

t"

ALL

Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
, (Gate-Source Plus Gate-Drain)

Qg

-

-

Qgs

ALL

Qgd

ALL

0.09 0.11

6.0 10.5

-

Gat~-Drain

0.06 0.085

0
VGs= 1OV. 10= 15A

ALL

Gate-Source Charge
("Miller") Charge

-

-

0
U

13:!0 1600

pF

600

800

pF

250

300

pF

-

30

ns

60

ns

--

80

ns

30

ns

39

60

nC

12

-

nC

Vos>lD(on)XROS(on) max." 10=1 5A
:

VGs=OV, Vos=25V, f=1.0MHz

Voo=0.5BVoss, 10= 15A, Zo=4.7 0
(MOSFET switching times are essentially
independent of ope,ratinQ tempersture.)

-

271

VGs=10V, 10=34A, Vos=0.8 Max. Rating
(Gate charge' is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink.

RthCS,

ALL

Junction-to-Ambient

,RthJA

ALL

-

-

1.0

KlW

1.0

-

KfW Mounting surface flat, smooth, and greased

-

80

K/W Free Air Operation

,

Notes: (1) ,TJ=25"C to 150"C
(2) Pulse test: Pulse width

o

z

:(

I

80/ols

VGe, 9V

pl

40

I

V-

I
/

,

I
I

=125"C
IJJ ___ TTJ=25°C
J

,a

lit

VGS-5V

VGS""~V
10

20

30

40

50

2
4
6
8
10
12
Vos, GATE-Ta-SOURCE VOLTAGE (VOLTS}

60

40

30

W
0:

20

'0

a

vas=al
"...,.

v~ ,l=

!
;.

IS Uj!TED BY RDSlonl

,a'

''!~F

IRF542,3

,

IRF540, 1

Ih V

J~

IL"

100,..s

,
1m,

Vas=6V

10ms
VG$=5V

I

Vas =4 V

1
2
3
4
Vos, DRAIN-Ta-SOURCE VOLTAGE (VOLTS}

Typical Saturation Characterist.ics

c8

OPERATION IN THIS AREA

'f'",V

~

"~

//

~ ./
~V
J. V 1/

fa

II:

w

~

,all~1I

Vo.";- I' K=9V
BOilS! Pulse iest

'4

Typical Transfer Characteristics

Typical Output Characteristics

50

_T'·-I55"C

(jj

Vos. DRAIN-Ta-SOURCE VOLTAGE (VOLTS}

"
""

II

VGS-6V

0

...Z

f/I

'I

II

I

20

---J

TJ=I_S50Cl

a

VGS-~V

r

.9

~

125°C~

TJ

T,.25'C

I

i!5

t

Test

Vos>loronJXRDSlon1 ""'"

VGS=lav

!

!Zw

,

50

I

BO/-ls Pulse Test

VGS =10V

SAMSUNG SEMICONDUCTOR

100ms

11111

~Tr121

1.~'L.a,.....+-.L.L-!:5J.J.J..L,J,.a.::'A::..F~:::;~",1..::,3.L:5l::aLU,l.!a:O:a:....",2aJ,.;a,...w:,,5a~a.J..U../
VOS. DRAIN-Ta-SOURCE VOLTAGE (VOLTS}

Maximum Safe Operating Area

245

N~CHANNEL

IRF540154115421543

. POWER ·MOSFETS

I-n~n

....

0-0.

~

-nin
1

~

=-

!"""':

NOTES

IrLIL

0=0.

~,~

=0

~mO.

SINGLE PULSE (TRANSIENT

".

THERMAL IMPEDANCE)

JJ UHI
I 111111 -.

2~

-.

1

1

-.

10

5

Duty

Factor D=l!..
~.

2. Per Umt Base=RItI./C= 1.0 Oeg.

orw.

3. TJIOTc ·PDM Z1IIJC (tl.

10

2

5

-.

10

11111111
2

5

I I

I I III

lO-

10

ll. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

15

~

12

f

9

, / ~ r--

V V/'.

-

TJ - - 5 bC

5

Tr25~c
T _12ls c

2

J

TJ =25°C

o

-!'"'"

TJ -15QoC

1ilL
fl. V

I"

5

80~

Pulse Test -

t--

1.0
10

TJ 25°C

20

30

40

50

o

0.4

"

0.8

12

16

20

24

10. DRAIN CURRENT (AMPERES)

VOD. SOURCE·TQ..DRAIN VOLTAGE (VOLTSI

Typical Transconductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

2. 5

,... V
v

,/

~

"..

,.......

0

I--"

"....

5

0.7 5
40

~

/v

5

5

o

40

80

120

_. TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Va. Temperature

c8

150 0 e

~ ~TJ
2

1.25

5

/)

0

VOS>I oo)XRtI$onl rna>:

t

0

V/

2

SAMSUNG SEMICONDUCTOR

160

o

V

-40

... V

.... V

L

-=r- -

VGS=10V

0

40

80

120

TJ. JUNCTION TEMPERATURE ('C)

Normalized On-Resistance Vs. Temperature

160

N-CHANNEL
POWER MOSFETS

I

IRF540/541 1542/543
300 0

2400

i

r

0

ao

~ 1200

(,)

U
600

25

\
\
\

t v".ovJ J J
Crss-Cgd

I

0

I

co

,

.......C
0

>

.........

\ '\ .........

20

~

III

Cgs+Cgd
=Cds+Cgd

"

\

!:i

Coss=Cds:+-CgsCgd

~

\

or

1=1 MHz

CISS=Cgs+Cgd, Cds SHORTED

c,,.

-

~

I

>
C""

I
50

0.5

a:

03

i

I
I
J
I
I
I
I
DU~noN l~mAL ~J"25Cf (HE~TING_EFFECT,_

~

20

40

60

ag• TOTAL GATE CHARGE (nC)

ao

100

Typical Gata Charga Vs. Gat.To-Sourca Voltage

.........

i'...

I

r--.... I"......... t:---.

~ t--..

IRF540,1

VGS=10V

IRF542.3· " ' "

0.2

~

'~

.~

i

,lo=rA

o

..........

o

~

-

OF 2 Oils PULSE IS MINIMAL)

z

:>

/

30

RDS[oo) MEASURED WITH CURRENT PULSE OF 2 OIlS

04

V'

IU/

~

Typical Capacitance Vs. Drain to Source Voltage

I

21~

~~

10

co
~

eo..

10
20
30
40
Vas. DRAIN·T().SOURCE VOLTAGE (VOLTS)

~

Vos=80Y, IRF540

:>

~

I'--

~u::~~~~

15

III

J

1

l,......-

1

20

40

~~

::p

60

100

80

ID. DRAIN CURRENT (AMPERES)

Typical On-Resistance VII. Drain Current

\
0
25

50
75
100
125
TA. AMBIENT TEMPERATURE (OC)

,
150

Maximum Drain Current Vs. Case Temperature

160
140

-'"'\

r-...

"'-

"

'\

r'\.

"'- ~

"'- r'\.

0

.....

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

'\.

140

160

Power Vs. Temperature Derating Curva

c8SAMSUNG SEMICONDUCTOR

247

N-CHANNEL

, ':.IRf;61:0J611 i61-2/613

PQW~R~MO$FETS
:. ,tL".

FEATURES

,•
•
•
•
•
•
•

Low ROS(on)
,,
Improved inductive ruggedness'
Fast switching thnes
Rugged polysilicon gate eell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
• TO-220 pac,kage

TO-220'

PRODUCT SUMMARY
Part

Num~r

Vos

RDS(on)

10

'IRF610

200V

1.50

2.5A

IRF611

150V

1.50

2.5A

IRF612

200V

2.40

2.0A

IRF613

150V

2.40

2.0A

B
~.

G

,.

MAXIMUM RATINGS
Symbol

IRF61 0

IRF611

IRF612

IRF613

Unit

Voss

200

150

200

150

Vdc

Drain-Gate Voltag,e (RGs= 1.0MO)(1) .

VOOR

200

150

200

150

Vdc

Gate-Source Voltage

VGs

Characteristic
Drain·Source Voltage' (1)

Vdp

±20

Coniinuous Drain Current Tc=25·C

10

2.5

2.5

2.0

2.0

Adc

Continuous Drain Current Tc=100·C

10

1,5

1.5

1.25

, 1.25

Ade

10

10

8.0

8.0

Ade

Drain Current-Pulsed (3)

10M

Gate Current-Pulsed

IGM

±1.5

Adc

,Total Power Dissipation @ Tc=25·C
Derate above 25· C

Po

20
0.16

Walts

Operating and Storage
Junction Temperature Range

TJ.

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 secon,ds

Tstg

TL

Notes: (1 )·TJ=25·C to 150·C
(2) . Pulse test: Pulse width"300j.ls, Outy Cycle"2%
(3) Repetitive rating:' Pulse width limited by max. junction temperature

c8

SAMSUNG SEMiCONDUCTOR

..

~

·Wf~C

-5510 150

• Co.

300

'·'C

N-CHANNEL
PO·WER MOSFETS

IRF·6f0/611/612/613
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol Type

BVoss

Min ·Typ Max Units

-

-

V

Vas=OV

IRF611
150
IRF613

-

V

10=250""

4.0

V

Vos=Vas.lo=250,.A

100

nA

Vas-20V

-100

nA

Vas=-20V

250

,.A

Vos=Max. Raling. Vas=OV

1000

,.A

Vos=Max. RatingXO.S. VGs=OV. Tc=125·C

IRF61 0
2.5
IRF611

-

-

A

IRF612
2.0
IRF613

-

-

A

IRF61 0
IRF611

-

0.9

1.5

0

IRl"612
IRF613

-

1.5

2.4

0

-

0

VGS(1h1

All

2.0

lass

All

Gate-Source Leakage Reverse

!Gss

ALL

-

On-State Drain-Source
Current (2)

Static Drain-Source On-State
Resistance (2)

loss

lo(on)

RDS(onl

All

Vos>lo(on)XRbs(on) max .• Vas= 1OV

g,.

All

O.S 1.4

Input Capacitance

Cisa

All

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

Cras

All

Tum-On Delay Time

leI(onl

All

I,

All

IeI(O")

All

t,

All

Total Gate Charge
(Gate-Source Plus Gale-Drain)

Og

All

Gate-Source Chwge

Oga·

All

Gale-Drain ("Miller") Charge

Ogd

All

-

'-

Tum-Off Delay Time
Fall Time

I

VGs=10V.lo=1.25A

Forward Transconductance (2)

Rise Time

Teat Conditions

IRF610
200
IRF612

~roe~Forwwd

Zero Gate Voltage
Drain Currenl

(Tc=25·C unless otherwise specified)

140 150

pF

70

80

pF

22

25

pF

15

ns

25

ns

-

VoS>lD{on)XRos(on) max .• 10":' 1.25A

Vas=OV. Vos=25V. f=1.0MHz

\

oss.

Voo=0.5BV
10=1.25A. Zo=5olo.
(MOSFI:T switching times are essentially
independent of operating temperature.)

15

ns

15

. ns

5.S

7.5

nC

1.9

nC

3.9

-

-

6.4

1.0

-

KIW
KIW

SO

K/W Free Air Operation

Vas=10V. 10=3.0A. Vos=O.S Max. Rating
(Gate charge is essentially independent of
operating temperature. )

nC.

THERMAL RESISTANCE·
Junction-to-Case

RthJC

ALL

Case-to-Sink

RlhCs

ALL

RthJA

All

,

Junction-to-Ambienl

-

-

Mounting surface flat. smoolh. and greased

Notes: (1) TJ-25·C·to 150·C
(2) Pulse test: Pulse width<300jlS. Duty Cycle<2%
(3). Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUcroR

249

N-CHANNEL

IRF61016111612/613

POWER MOSFET$

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Type

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage ,(2)

VSD

Min Typ

Max Units'

Test Conditions

IRF61 0
IRF611

-

-

2.5

A

IRF612
IRF613

-

-

2.0

A

-

10

A

-

8.0

A

-

2,0

V

Tc=25·C, Is=2,5A, VGs=OV

-

1.8

V

Tc=25·C, Is=2.0A, VGs=OV

-

ns

IRF610
IRF611
IRF612
IRF613
IRF610
IRF611
IRF612
IRF613

Reverse Recovery Time

~

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

TJ=150·C, IF=2,5A. dlF/dt=lOOAljlS
trr
Notes: (1) TJ=25·C to 150·C (2) Pulse test: Pulse wldth"300,..s. Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max, junction temperature
6, 0

ALL

290

5,0

1-~~=I?V

8~

Pulse Test

VGS~8V

5, 0

4,0

..ifi

voo=1v

0

~

lo~ Pul99!Tast
__ •

~..>o....xR

•

a:

w
:Ii

.

T,=125.b .......
TJ'",25°C
T,=-55'2:::;:

I

3,0

II

I-

Z
w

0

a:

!iu

VGS -6V

2,0

~

~0:

0

/II

C

~

v,,-lv- -

1. 0

1.0

..a

Vas=4V

o

10

20

30

40

50

60

0

1,5

I~~

4,0

~

0

/

~

=8

VGS - 5 V -

I

BY Ros..""l

o

_I!,~'~~
_

-Jr'

IRF612,3

I

5f:=
r--

21--

Vos=4V

LO

ao

~o

-

-T

I

i

5,0

0, 1
1,0

,J

~

Tc _25 G
TJ -150°C MAX.
R....c-64KJW

iiiflm'
5

10

la,.s

10~j.I!l

I

,...

! ~'0m8

II
IRF611'~~ lOOms

IRF610,2

20

50

100 200

500

VD•• DRAIN-TD-SOURCE VOLTAGE (VOLTS)

VD•• DRAIN-TD-SOURCE Y,Oll-AGE (VOLTS)

Typical Saturation Characteristics

Maximum Safe Operating Area

SAMSUNG SEMICONDUCTOR

10.5

~~M~~~S

1

V

9,0

7,5

tRF610,1

/
1~

&.0

2

IRF612,

/
/

5

VGS=6V

/.
0

;t-- T'=-r

4,5

Typical Transfer Characteristics

Typical Output Characteristics

BOlAs Pulse Test

TJ""125°C
_TJ=25°C

YG •• GATE-TD-SOURCE YOlTAGE (YOlTS)

VD •• DRAIN-TD-SOURCE VOLTAGE (VOLTS)

5,0

3,0

111:::-

r

250

N-CHANNEL
POWER MOSFETS

IRF610/611/612/613

!i:

2

Z

1. 0

I

Ilj
~E

.... Z

~~

~~

W Z

O.

2,·D'

~;:s
N~

~ ~
::0 ...

t::;;;i ~I""'"

0.0

IILJL

0-0

].,;0.02

0.02

NOTES

......

O. 1

U~

~

........: I.!:::II!I

,..

0-0

a:e
~ ~ 0.05

I11 . .

...

0=';;

~: o. 5

~.~

SINGLE PULSE (TRANSIENT

Tf'fR~AL

~=oo'1'"

'rfOffn II

1 Duty Factor. D=..!!..

.

"

2 Per Uht Base=Rtt...c=6.4 Deg CfW.
3 TAr"Tc""PDMz.....c It).

\.;'

,1A"1

JJWll
5'0

~

10

10
,

2

5

.,

10

2

5

I I 11111 i I I I I I II

10.,

1

2

5

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction· to-Case Vs. Pulse Duration

4. 0

3. 6

-f--ai p.1

,

10
T,,'

5

VOS>ID!CII'I)XRDS!om ....

2
0
4

0
6

~
I. ~

2

8

O.

/

;'

JI
I(

-

---

5

~=25°C

"""~

5

2
1

2
3
4
to. DRAIN CURRENT (AMPERES)

1.1 5

i"

5
10

L ~

....V

V

r"'"
5

V

./

/

/"

O.B 5

5

40

40

BO

'20

TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

c8

4

Typical Source-Drain Diode Forward Voltage

5;, . /

0.7 5

3

k'" I--'

we

~-

2

Vso. SOURCE·TO·DRAIN VOLTAGE (VOLTS)

2. 5

CD::;
<>::0

t:: TJ=25°C

0

1.2 5

a: a:
5~ 0.9

/I

rr I- T,~150'~

2

T/111125°C

Typical Transcounductance Vs. Drain Current

I~

T4=25°C

TJ =-55°C

o1

o

~g

~>=150OC

~

8

I

~

2

SAMSUNG SEMICONDUCTOR

160

IL

'"

VGS "",10V

lo""·25A

V

0
-40

0

40

80

I-

120

160

TJ, JUNCTION TEMPERATURE ('C)

Normalized On-Resistance Vs. Temperature

251

N-CHANNEL

500

25

,.

V~-O.J

J'
Coss=Cds+

cm-CgcI

...ui

...u~

,.a:
~
t:'

~

200

"\ I"
t'-...

U
100

a

c..

...
15

~

5

,

". ,

o"s

p'uLSE IS MlNlMjl

I

2. 4

I

VGS ",,1OV

~

3

~

...

!

i

II

2

i

u

/

J

~r

~~

1

!

o

4

6

8

10

10. DRAIN CURRENt (AJoIPERES)

Typical On-Resistance Vs. Drain Current

• 20

4.
6"
.'" 8 ",'~ '.:
Q •• TOTAL OATE CHARGE (nC)

10"

>,

1. 8

'i'- t-....
l"- t....

i"""- t-....
r" r--.....

~610,1

IRF61;;-

12

i

r-...

i'- t-....
,

~ ..

~

.9 0 6

0
25

'\
)

50
75
100
125
TA. AMBIENT TEMPERAtuRE (OC)

Maximum Drain Current Vs. Case

150

Temp.eratur~· .

'\

1\

5

f\

'\

r\.

0

'\

5

"
I

o

2

DURATION INITIAl T J ""Z5°C. (HEATING

EFFECT OF 2

4

i

.

V

3. a

U

,u , '

"l3A

J

Typical Gat~ Charge Vs. Gatl!:'To-Source Vo~ge

r--- Lo,a ~EASU.!.O wJH ""':'ENT .LLSE ~F
2

~...

~.,."

I

o

50

~~

./. ~'

5

em

10
20
. 30
40
V... DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Vos=l00v

A

10

Typical Capacitance Va. Drain to Source Voltage

iii

.

. Vos-16OV, n:wS.1Q. 2

~

bo..

t:'·

. Voo lllo 4OV

I!!

I

r-I--.

'.

20

~
j!:

300

~

f

~

I

gsCgd
Cgs+CgcI
=:Cds+Cgd

u

~

~

f-1 MHz
CIss=Cg8+Cgd, Cds SHORTED

400

.

POWER' MOSF!t$~

IRt=610/6'1116.121613

20

l"-

40
60
80
100
120
TA. AMBIENT TEMPERATURE (!C)

\.
140

Power Vs. temperature Derating Curve

=8

SAM5UNG SEMICONDUCTOR

.,ZS:i::

N-CHANNEL
POWER MOSFETS

IRF6201621 1622/623
FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO-220

PRODUCT SUMMARY
Part Number

VDS

RaSCon)

la

IRF620

200V

0.80

5.0A

IRF621

150V

0.80

5.0A

IRF622

200V

1.20 :

4.0A

IRF623

150V

1.2.0

4.0A

II

MAXIMUM RATINGS
Characteristic

Symbol

IRF820

IRF821

IRF822

IRF823

Unit

Drain-Source Voltage (1)

Voss

200

150

200

150

Vdc

Drain-Gate Voltage (RGs=1.0MO)(1)

VOOR·

200

150

200

150

Vdc

Gate-Source Voltage

Vas

Continuous Drain Current Tc=25°C

±20

Vdc

.10

5.0

5.0

4.0

4.0

Adc

10

3.0

3.0

2.5

2.5

Adc

Drain Current-Pulsed (3)

10M

20

20

16

16

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power DiSSipation @ Tc=25°C
Derate above 25°C

Po

40
0.32

W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Continuous Drain Current Tc=100°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

c8SAMSUNG SEMICONDUCTOR

Watts

~53

. N-CHANNEL

IRF620/621 1622/623

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

DrSin-Source Breakdown
Voltage

Gate Threshold Voltage

BVoss

VGS(th)

Type

-

V

IRF621
150
IRF623

-

-

·V

ALL

2.0

-

IGSS

ALL

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

Static Drain-Source On-State
Resistance (2)

ROS(on)

IRF620
5.0
IRF621

VGs=-20V

250

"A

Vos=Max. Rating. VGS=OV

"A

Vos=Max. RatingXO.B. VGs=OV. Tc=125°C

1000

-

VOS>IO(on)XROS(on)

0.4

O.B

0

IRF622
IRF623

-

O.B

1.2

0

1.3

2.B

-

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

td(on)

ALL

t,

ALL

td(off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd·

ALL

Vos=VGS. 10=250"A

A

-

ALL

Fall Time

VGs=20V

nA

IRF620
IRF621

ALL

Turn-Off Delay Time

nA

-100

A

gfs

Rise Time

V

-

Cis.

10= 2501lA

4.0

-

Forward Transconductance (2)

VGs=OV

100

IRF622
4.0
IRF623

Input Capacitance

Test Conditions

Max Units

-

Gate-Source Leakage Reverse

10(on)

Min Typ

IRF620
200
IRF622

Gate-Source Leakage Forward

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise specified) .

max••

VGs=10V

VGs=10V.10=2.5A

. -

(}

450 600

pF

150 300

pF

50

12.5
4.0
a.5

BO

pF

40

ns

60

ns

100

ns

60

ns

15

nC

-

nC

-

Vos>IO(on)XROS(on)

max .•

10=2,5A

VGs=OV. Vos=25V. f=1.0MHz

Voo=0.5BV~ss. 10=2.5A, Zo=50 O.
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V, lo=6.0A. Vos=O.B Max. Rating
(Gate charge Is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junctlon-ta-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junctlon-to-Ambient

RthJA

ALL

- - 3.12
- 1.0 - - BO

KIW
K/W Mounting surface flat, smooth, and greased

KIW

Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width~300jlS, Duty Cycle~2%
.
(3) Repetitive rating: Pulse width limited by max. Junction te{TIperature

c8

SAMSUNG

SEMIC~NDUcrOR

..

264

N-CHANNEL
POWER MOSFETS

IRF620/621 1622/623

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vso

Type

Min Typ

IRF620
IRF621

Max Units

- - - 4.0
- - 20
- - 16.
- - 1.8
- - 1.6
- 350 5.0

IRF622
IRF623
IRF620
IRF621
IRF622
IRF623
IRF620
IRF621
IRF622
IRF623

Test Conditions

A
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

A
A

Q[J

A
V

Tc=25·C, Is=5.0A, VGs=OV

V

Tc=25·C, Is=4.0A, VGs:=,OV

Reverse Recovery Time
ALL
ns TJ= 150·C, IF=5.0A, dIF/dt= 1 OOAl,..s
trr
Notes: (1) TJ=25·C to 150·C (2) Pulse test: Pulse wldth"300,..s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
'2

~~GS-lOV

80~

'0

Pulse Test

"

Vos=BV

k

Ves"/7V

'a

1

i3

8

iil
w
a:

..

VGs=65V

I

w

1

tzw

a:
a:

~
I-

Z
W

I

a:
a:

::>

VGS-S 5V

(J

VGS~5V
I . f-

C
a:
c

TJ""125"~~

z

c.
~

TJ=25°Ch

TJ=-S5"C'7J

~

///

Vos""4.SV
Vas1lO4V-

o

A r;

t--

20
40
60
80
,00
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

o

,20

2
4
6
8
'0
12
VOs. GATE-Te-SOURCE VOLTAGE (YOLTS)

80j.lS Pulse 'rest
VosR.10V
VGS""8V

"

l'

!J

I

r

~

,."

OPERATION Ir-t THIS
AREA IS UMITED BY

Rcsnw.1

vGS""a 5V
IAF620,1

I

-:IAF.22,1'

r'.

,

vGS""ev

r''I..

I

,oo,.s

IAF622'r3

2

/

0~=I!'_2.'C

vas.LI

5

'i,
t\

=

"I

f= =iC.~~.~~
f:=
-'~NGLE PULSE

2

Vas"'4V

SAMSUNG SEMICONDUCTOR

10

0,

,

1,0

111111

'j
,om.

VG.-4.5V

Typical Saturation Characteristics

,0,..'-

IRF620,1

VB8 .. S,5V

2
4
8
8
VDS, DRAIN-TD-SOURCE VOLTAGE (YOLTS)

c8

10'

-D ';L. f-V"~7V 1J.

'1/
V
I~

14

Typical Transfer Characteristics

Typical Output Characteristi,-Case Vs. Pulse Duration

103

6.5

5

k-"

0

5

V V
VL ~
h~

......

...-

--

~

T~'""25°C

TJ'=125°C

~

vos>lot ""'"

.Di-I

,

4

t--

J

---

JIL

2

TJ=-55°C

r-- T -2Slo C - r::=

6

Tm

r---~

8

10

1.25

TJ=150°C
TJ

""i

5OC

1.0
0123456

10. DRAIN CURRENT' (AMPERES)

V... SOURCE-TO·DRAIN VOLTAGE (VOLTS)

Typical Source-Drain Diode ·Forward Voltage.

2.5

5

'..;

L

V

.... ~

V

I

l-

V

V

/v

/

/'

.;'

V

..... ~
~.

5

0.75
-40

TJ o=150°C

r--

Typical Transconductance lis. Drain Current

5/

'"

."

Vos=10V
Jo=2.SA

5

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Va. Temperature

.c8SAMSUN<:3 SEMICONDUCTOR

160

0
-40

0

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

Normalized On-Resistance Vs. Temperature

',256

N-CHANNEL
POWER MOSFETS

IRF620/621 1622/623
1000

25

VGS=O

I

1=1 MHz
CISS-CgS+Cgd, Cds SHORTED

..

i

u

\

Z

~

u

:.
1!

u

\

200

20

0

15

..
..

~
>

i\...

~
!C

"- .......

-

fa

/

">:;

Coso

10
20
30
40
V... DRAIN-TO-8OURCE VOLTAGE (VOlTS}

V

50

4

I. . . . . . ~
Roston! MEASURED WITH CURRENT

a..s DURATION

.......

~~~~=E~~~6J OF 2 ~

-PULSE IS MINIMAL)

3

5

a

35

\

'\

5

25

Vs. Drain Current

\

"

I\.

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

140

Power Va. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

20

II

'~

i"-.
IR~

IRF620,1

"I'..

...... 1'-.,

i\.:

~

,

1,\

25

50
75
100
125
T•• AMBIENT TEMPERATURE (OC)

150

Maximum Drain Current Vs. Case Temperature

'\

.~

a

r-....

1

'\.

"

5

a

O~eslstance

18

~

VGS-20V

10
15
20
I•• DRAIN CURRENT (AMPERES)

Typical

40

/

12

.i'.........

VGS -10V

/

8

0". TOTAL GATE CHARGE (nC)

Typical Gate Charge Vs. Gate-To-Source Voltage

25

./ ........ ~

lo""6A

I

ens

Typical Capacitance Vs. Drain to Sourea Voltaga

_~ULSE Of 2

IAV
~V
V
Ld

Vos=40V
V05 =100V"'"
Vos.=160V

~
:::>

Cos

\

\

....

~

Cgs+Cgd
a:Cds+Cgd

\

\

400

!:i

COSS"'Cd8+~

\

600

Iii

I

Crss=Cgd

800

160

N-CHANNEL
'POWER MOSFETS

IRF63016311632/633
FEATURES
Low ROS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance'
Extended safe operating area
Improved high temperature reliability
• TO-220 package

•
•
•
•
•
•
•

TO-220

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF630

200V

0.40

9.0A

150V

0.40'

9.0A

0.60

B.OA

0.60

B.OA

IRF631
~

--

IRF632

200V
-- ----

IRF633

150V

MAXIMUM RATINGS
Symbol

IRF630

IRF631

IRF632

IRF633

Unit

Drain-Wource Voltage (1)

Voss

200

150

200

150

Vdc

Drain-Gate Voltage (RGs= 1.0MO) (1)

VOOR

200

150

200

150

Vdc

Gate-Source Voltage

VGS

Characteristic

±20

Vdc

Continuous Drain Current Tc=25°C

10

9.0

9.0

. B.O

B.O

Adc

Continuous Drain Current Tc=1 OO°C

10.

6.0

6.0

5.0

5.0

Adc

Drain Current-Pulsed (3)

10M

36

36

32

32

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

' 75
0.6

W/oC

Operating and Storage
Junction Temperature Range

TJ.

MaximUm Lead Temp. for Soldering
Purposes, 1/B" from case for 5 seconds

Tstg
TL

Watts

-55 to 150

°C

300

°C

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse wldthCi300jAS, Duty CycleCi2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

25B

N-CHANNEL
POWER MOSFETS

IRF630/631 1632/633
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Symbol

BVoss

Typa

(Tc=25°C unless otherwise specified)

Min Typ

Max Units

IRF630
200
IRF632

-

-

·V

IRF631
150
IRF633

-

-

V

Tast Conditions
VGs=OV
10=250,.A

VGSlth)

ALL

2.0

-

4.0

V

Vos=VGS. 10=250,.A

Gate-Source Leakage Forward

IGSS

ALL

-

100

nA

VGs=20V

Gate-Source Leakage Reverse

IGSS

ALL

-

-100

nA

VGs=-20V

ALL

-

-

250

,.A

Vos=Max. Rating. VGs=OV

-

1000

,.A

Vos=Max. RatingXO.S. VGs=OV. Tc=125°C

Gate Threshold Voltage

Zero Gate Voltage
Drain Current

On-State Drain-Source
Current (2)

Static Drain-Source On-State
Resistance (2)

loss

1010n)

ROSlon)

IRF630
9.0
IRF631

-

-

A

IRF632
S.O
IRF633

-

-

A

Vos>IOlon)XROS(on) max .• VGS= 1 OV

IRF630
IRF631

-

0.25

0.4

I)

IRF632
IRF633

-

0.4

0.6

I)

-

0
pF

Forwafd Transconductance (2)

gfs

ALL

3.0 4.6

Input Capacitance

CiSS

ALL

-

720

SOO

250

450

pF

60

150

pF

-

30

ns

50

ns

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

ld(on)

ALL

-

Tr

ALL

-

ld(off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qgo

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

Rise Time
Turn-Off Delay Time
Fall Time

II

VGs=10V.10=5.0A

50

ns

40

ns

30

nC
nC

14

-

K/W

19
5.0

Vos>IO(on)XROS(on) max .• 10=5.0A

VGs=OV. Vos=25V. f=1.0MHz

Voo=0.5BVoss. 10=5.0A. Zo=15 (I
(MOSFET switching times are essentially
independent of operating temperature.)

VGS=10V. 10=12A. Vos=O.S Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthcS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.67

1.0

-

K/W Mounting surface flat. smooth. and greased

-

SO

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pul.se wldth<300,.s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSlING SEMICONDUCTOR

259

:N-CHANNEL
POWER MOSFETS

IRF630/631 1632/633

SOURCE-DRAIN DIODE RATINGS AND CHARACrERISTICS
Symbol Type

Characteristic
Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vso

-

-

IRF632
IRF633

.t,.

Reverse Recovery TIme

Min Typ

IRF630
IRF631
IRF632
IRF633
IRF630
IRF631
IRF632
IRF633
IRF630
IRF631

ALL

Max Units

...:...

9.0

A

-

8.0

A

-

36

A

T.st Conditions

:

~

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

-

32

A

2.0

V

Tc=25·C. Is=9.0A. VGS=OV

-

1.8

V

Tc=25·C. Is=8.0A. VGS=OV

450

-

ns

TJ-150·C. IF=9.0A. dlF/dt=1 OOA/jAS

Notes: (1) TJ=25·C to 150·C (2) Pulse test: Pulse wldth<300,..s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
10
TJJ1250C

1=

I

TJ -25°C_

eo,.s Pulse Teet

iii

:I!w
A.

vcs>'loton)X~IIII'

...$Z
w

a:
a:

~

If

16

:E

H

l1

Ti- S5 ° C -

6
VflS=7V

j

12

J
T~-25"C h/I

0
z

TJ -12SoC

C
a:
Q

TJ--!?5°~

.9",

IfII

//1
J'@
20
40
60
80
100
VDS. DRAIN·T().SOURCE VOLTAGE (VOLTS)

120

1
2
3
4
5
6
Vas. GATE·TC>-SOURCE VOLTAGE (VOLTS)

Typical Transfer Characteristics.

Typical Output Charactaristics

10

10 2

~ VL,J
A~ ~~GS-9V

8~ PuiseTest

.

,.

/b

oPeR~",,!N IN ""S
MEAIIS L..iirED

BYR~"'I'

1RF630,1

~r-r

Vas-BV

........ VGS ""'7V

2

"

JRF6k. )

1V

VGS-6V

".
1ms

~,

~~

o

L

vGS=sv

v,,~lv

IL
1

1"",

IRF632,3

~/

2

1',

2

3

4

liDS. DRAIiHo-SOURCE VOLTAGE (VOLTil)

TVDical Saturation Characteristics

c8SAMSUNG SEMICONDUCTOR'

Tc -25"C
5 r = TJ -l50"C MAX
I----; Rtuc-l 67 KIW
SINGLE PUlSE

r--

,

2

11111111

o. 1
1.0

2

,i
~+

II
Imi'!,,3 'if'l~

50
10
20
5
'uu JU OUU.
VDS. DRAIN-TC>-SOURCE VOLTAGE (VOLTS)

Maximum Safa Operating Area

260

. N-CHANNEL
POWER MOSFETS

IRF630!63116321633

~

~~ 1,o~~~~~~~~~~~~~!!~~~~~~~ii~~~~~~~~~~~~~~~~~~~~i

~z

w,?

0.5 Ca.-O 5

~~
w z

0.2~~D~-~O.~2~~~tat::tJ::t~Ettt~~~~~::;~~~~IJj1!t=1=t~=tjjj1!t=t=t~=tjjjj!t=1=t=:t1=tttm
""'"
l;;.!:D~OJ,l...j+rtmfi-"'---i--=±...I""I";lo:t:lim....-"---t-t--t-Hiiitt--t-t--t-Hiiitt--t-t- NOTES

~~
~~

~

.J:J1--,.-1,.U n
~i! O.,~D~:r:~ob~.ill~~i-"~:I;;I"!~IIIH~ml~~rn
I
----1
:I~

~~
~
-~ ....

~

L

0=002

.0: C

0.05

~-O.Ol

~~G~!.~;,:E~~~IENT

~

0 02

~+-+-T-f-t·r+H+'---i~--~r+++tH--t-j-+-rt,,~f-+-t-4-H-H~IIf-+-t-2

~+-+-T-rrr+H+'---i~--~r+++tH--t-j-+-rt,,~j-+-t-4-H-H~r-+-t-l

~

~+-+-+-Irr++H+-jH--~r+++tH--t-f-+-rt,,~f-+-t-4-H-H-tt1f-+-t-3

~~F~mrD=~
Per UnIt

Base,",R~=

1 67 Deg C/W

TJM-Tc·PQMZu'JC (t)

...J...'""+5J..1..1,,~0"'"~2-J..~5,.J....L.4,~1~.,...,"'"'-,!,.........I-II~I,-J.I..L.JIII~1'~1_!:-11~...1!-1u.11~,0.

0.0;'="0:-"...J......J....I-!-'-.l..J+!:,0""
.• ..J.....J:----l-....L..J5,-J-J-1.!:,0\"
.•,-I-.J,-2

11. SQUARE WAVE PULSE DURA nON (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

10

10

II

I

..~
w

W

~

6

/'

V'
"/ ~

.U

i
~
c

~V

I!'

-

- -

r:.
~
V

I-~

r

8
12
16
ID. DRAIN CURRENT (AMPERES)

f

10

w

0:
0:

:::>

U

W

IIIw

. VDS>lo.onl~RDS(onI _

o

T);150"C

Q

8a~NseTest'-

JI/

S;

~

~0:

TJ -125 C
Q

!J, '/

..

T,=2!i'C

0:

8

Ii

=F

iii

,

20

1.0

>
W

0:

=

j

----,

F~J 150"C

,

0.1
0

TJ=2rC
6

VOD. SOURCE·TCl-DRAIN·VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

125

2.5

w

o·

~

1.15

z

~

~~1.0
....

~

5

wC

..,.,.V

"II!
0:0:

:to 09 5

~lO

i"'
~

./

.......

..,..,. ~

V

"".,..

./

..,.,.V

V

.......

../ V

VGS -1OV
ID=5A

0.85

0.75
-40

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

c8 SA~SUNG SEMICO~DUCTOR

v

o
160

-40

0

40

80

120

160

TJ. JUNCTION TEMPERATURE (OC)

Normalized On-Resistance Vs. TemDerature

261

·N-CHANNEL
··POWER MOSFETS

·~ IRF630163116321633
2000

25

vl=~

.J

f-1 MHz

O~C

CISS=CgS+Cgd, Cds SHO

~
...
g
""'~

0

Crss=Cgcl

1600

Coss=Cds+ CgsCgd
Cgs+Cgd
==Cds+Cgd

\
\

~

~

c,,,

"~

eo"

J

32

.40

10

VJ=10V

0.8
PULSE OF 2 0"" "'fAT~.
INm~ TJ=25'oC
I

f-

I

I

.........
i'-..
.........
.........

iii

.l

RDS(on) MEASURED WITH CURAENT-,

i'-..

"'II:
~

..
:E

(HEATiNG EffECT OF 2 o~ PULSE

~

IS MINIMAl)

z

o. 4

.....-

~
I;'

~~

24

a g• TOTAL GATE CHARGE (nct

Typical Gate Charge Vs. Gat..To-Source Voltage

~

~
5

18

VDS. DRAIN-To-&DURCE VOLTAGE (VOLTS)

Typical Capacitance Vs. Drain to Source Voltage

1.0

0.6

/

V

50

40

30

~

ID-12A

>

c""
20

LaV

/.W'

~

\

10

il!

10

I;'

\,

i

~::~~~v "

Vre -160V,IRF630'h

::>

400

I

15

"'II:U

\

\

20

J
,/

o. 2

o

16

"'

i'-.. ......... .....
.........
i'-..

::>

u

~
Voo=20V-

24

...........

lnr63o:, 3

II:
II:

-

.....

~

4

II:

0

0.1

"
..........

0'~

~

~

,

:l
40

32

ID. DRAIN CURRENT (AMPERES)

0 25

50

75

100

125

150

Tc. CASE TEMPERATURE ('C)

Typical On-Resistance Vs. Drain Current

Maximum Drain Current Vs. Case Temperature

80
70

i
Z
0

r-- ~

\..

60

\

50

I\.

'\

....~

'\

ij
is
II:

30

...0

20

~

£

"

'\.

10

0

20

40

80

80

100

120

r'\..
140

180

T,. CASE TEMPERATURE ('C)

Power VB. Temperature Derating Curve

. c8~AMSUNG SEMICONDUCTOR

262

N-CHANNEL
POWER MOSFETS

IRF640/641 16421643
FEATURES
• Low ROS(on)
• Improved inductive ruggedness
•
•
•
•
•
•

TO-220

F.ast switching times
Rugged polysilicon gate cell structure
Low input. capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF640

200V

0.180

18A

IRF641

150V

0.180

18A

IRF642

200V

0.220

16A

IRF643

150V

0.220

16A

._-

I

--

MAXIMUM RATINGS
Characteristic

Symbol

lRF640

IRF641

IRF642

IRF643

Unit

Drain-Source Voltage (1)

Voss

200

150

200

150

Vdc

Drain-Gate Voltage (Ras= 1.0MO) (1)

VDGR

200

150

200

150

Vdc

Gate-Source Voltage

Vas

16

16

Continuous Drain Current Tc=25°C

10

±20
18

18

Vdc
Adc

10

11

11

10

10

Adc'

Drain Current-Pulsed (3)

10M

72

72

64

64

Adc

Gate Current-Pulsed

10M

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

125
1.0

W/oC

TJ, Tstg

-55 to 150

·C

TL

300

·C

Continuous Drain Current Tc = 1 00 ° C

Operating and S!orage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Watts

Notes: (1) TJ=25·C to 150·C

(2) Pulse test: Pulse width .. 300,",s , Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

ciS

SAMSUNG SEMICONDUCTOR·

;163 '

I~F640i641/642/643

N-CHANNEL

.

·PDWER ",OSPErs

. ELECTRICAL CHARA.CTERISTICS
Characterlslic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol Type

BVoss

Min Typ

-

-

V

VGs=OV

IRF641
150
IRF643

-

V

10= 250flA

4.0

V

Vos=VGs. 10=250,..A

100

nA

VGS=o20V

-100

nA

VGs=-20V

250

flA

Vos=Max. Rating. VGs=OV

IRF640
18
IRF641

-

-

A

IRF642
16
IRF643

-

-

A

VGS(Ih)

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSs

ALL

-

Zero Gate Voltage
Drain Current

loss

ALL

lo(on)

IRF640
IRF641

Static Drain-Source On-State
RoS(on)
Resistance (2)
IRF642
IRF643
Forward Transconductance (2)

Qfs

ALL

Input Capacitance

Ciss

ALL

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

C~

ALL

Tum-On Delay Time

leI(on)

ALL

....

ALL-

leI(off)

ALL

Rise Time
Tum-Off Delay Time
Fall Time

Test Conditions

Max Units

IRF640
200
IRF642

Gate-Source Leakage Forward

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise speCified)

tf

ALL

Total GIlte Charge
(Gate-Source Plus Gate-Drain)

Og

ALL

Gate-Source Charge

Oga

ALL

Gate-Drain ("Miller") Charge.

Ogel

ALL

-

1000 p.A

Vos=Max. RatingXO.8. VGS=OV. Tc=125°C

VosTo(on) X ROS(on) max .• VGs=1 OV

\

-

0.13 0.18

0

-

0.20 0.22

0

VGs=10V.10=10A

6.0 ,9.5

-

-

1200 1600

0

VOSTD(on)XRoS(on) max .• 10= 1 OA

pF

360

750

pF

130

300

pF

-

30.

ns

60

ns

80

ns

60

ns

44

60

nC

9
35

-

nC

-

1.0

K/W

VGs=OV. Vos=25V. f= 1.0MHz

Voo=0.5BVoss. 10=10A. ZO=4.7D
(MO$FET switching times are essentially
independent of operatlhg tempe~ature.)

VGS=10V •. lo=22A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-C8se.

RlhJc

ALL

Case-to-Sink

RIhCS

ALL

Junction-te-Ambient

RthJA

ALL

-

1.0
~

-

KIW

80

K/W Free Air Operation

Mounting surface flat. smooth. and greased

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300,..s. Duty Cycle<2%
.(3) Repetitive rating: Pulse width limited by max. junction temperature

. c8SAr-tSUNG SEMICONDUCTOR

N-CHANNEL
. POWER MOSFETS

IRF640164116421643

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Type Min Typ
IRF640
IRF641
Is
IRF642
IRF643

Characteristic
Continuous Source Current
(Body Diode)

Pulse Source Current
(Body Diode) (3)

Diode Forward Voltage (2)

-

18

A

-

-

16

A

-

-

·72

A

-

64

A

-

2.0

V

Tc=25°C. Is=18A. VGS=OV

-

1.9

V

Tc=25°C. Is=16A. VGs=OV

650

-

ns

TJ=150°C.IF=18A. dIF/dt=100A/,..s

-

..

IRF640
IRF641

VSD

Reverse Recovery Time

-

IRF640
IRF641
IRF642
IRF643

ISM

IRF642
IRF643

-

ALL

Irr

Test Conditions

Max Units

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

~

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth';;300,..s. Duty Cycle4it2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
0

48
V:GS-l0

VGS""9V_

.LpLrl- -

40

iii
w
a:

...:Iiw

T

32

..ffi

4

":cz

6

I
VGS.l7V -

2 r---- Vre>loionIXAos!..,.....

4

6

I

8

II-

~~

Vas=4V

1

20.

4

0

o

""

10'

40

I

-

J",," PuLe re.!

32

~

24

~~
~

16

8

/

~

~
~ ;...--;-

/. t:.... ~

V

-~
~

v,,-~v

I

V",'6V-

.

TJ s=12poC

TJ=25°C

_TJ=-~6OC
14

I

~IIRF640,1

===,*642,3

2 - \ - IRF640. 1
IAF642.3

0

""

"I

1",,"

li~
lms

5~~~"~~~~IS

r--BY"-'

IIII

2r-

or--

J2l.b1

lOms

l, 1~l8

F=== Tr 150°C MAX

5~:~~~
2

2

_

DC

v,,-Sv
v,,=Jv

1

3

4

VDS. DRAIN·TD-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8

,

Typical Transfer Characteristics

Typical Output CharacteristIcs

I

f-----

2
4
6
8
10
12
VO•• GATE-TO-SOURCE VOLTAGE (VOLTS)

VD•• DRAIN-TO-SOURCE VOLTAGE (VOLTS)

"

TJ=25°C
T~ __ 55°C

J

8

Vos""5V

o

I

I

~~~ 125·C

I
,I

-

I

~

~

~

\1GS=6V

:!i

I

,

'l

k.. ......!reet

VGS=8V

~

II!:::>

~/

-

SAMSUNG SEMICONDUCTOR

o.1
1.0

2

IIII

iiim'

~RIYH

500
5
10
20
50
100 200
Vos. DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Ar8!l

·265

N-CHANNEL
POWER M,OSFETS

IRF640J641 16421643

I

2

ffi

iii

z

~~

1.0
I-o~

~: 0.5

~~
~~

tb z

O.

fa~

!:!o.

4i!!

!:::ill

I0""0.

\ol,
o

o. 1

::0 ....

~ ~ 0.05

f·"

~~O.

2

-

0

-

O:C

~ t::i~

NOTES

"""'"

In...fL
~,~

SINGLE PULSE (TRANSIENT

'"

THERMAL IMPEDANCE)

1. Duty Factor D=~

t,.

I 111111

10-"1-'

0.0 1
10'

2 Per Unit Base=RIIJC =1.0 Oeg OfW
3 TJM""Tc=PDMz.... JC (t).

I I IIII.,
5
10

~

10

2

5

.,

10

2

I 1.11111'

10.,

5

I I

I I

r II
10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Ethlctive Transient Thermal Impedance Junction-til-Case Vs. Pulse Duration

0

103
5

16

I

2
TJ --S5°C

i
.g

I--

2

V
V V

4

IV i.--'"'
r/v

_I"'"'

.....

T!-25.JTJ =125°C

~

8~ Pulse Te~.

t

vr"OO'["OOOO' - -

TJ-25°C

51--

f-T J - 1f?O°C

11

I

2
1. 0

16

8

0

24

2

wC
"::0
0:0:

~i 0.95 /

V r---

L

1.6

0

~

V
L

5

.............

2.0

24

V

./

. /V

./

0

V

,/"
Vss

Typical Capacitance Vs. Drain to Source Voltage

I

~

~

I
I

Coso

30

t--..

2

...-

~ o. 1

J:> ~..... ~

V ." 1"=21"

1/

O.

~""1 MEASURED WITH CURRENT
PUlSE OF 2 ~ DURATION
INmAL TJ=25°C.

~

~~~~~~ ~~,~~)i 2 o~

J

20

40

60

80

100

ID. DRAIN CURRENT (AMPERESt

0

25

50

75

100.

125

\

,
150

TA. AMBIENT TEMPERATURE ('Ct

Typical On-Resistance ·Vs. Drain Current

Maximum Drain Current Vs. Case Temperature

160
140
0

f--

'""....

"-

0

",'

.... ~

.....

r\.

.....

0

O.

20

40

60

80

100

r\.

120

"

"

140

T A. AMBIENT TEMPERATURE ('Ct

180

Power Vs. Temperature peratlng Curve

c8

SAMSUNG SEMICONDUCTOR

267

.. ; ) ;

N-CHANNEL
.POWER MOSFETS

IRF71 0/711/7.12/71 3
'.t,

FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell struc.ure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO-220'

PRODUCT SUMMARY
Part Number

Vos

ROS(onl

10

IRF710

400V

3.60

1.5A

IRF711

350V

3.60

1.5A

IRF712

400V

5.00

1.3A

IRF713

350V

5.00

1.3A

...

~

MAXIMUM RATINGS
IRF710

IRF711

IRF712

IRF713

Unit

Voss

400

350

400

350

Vdc

Drain-Gate Voltage (RGs=.1.0MO) (1)

VDGR

400

350

400

350

Vdp

Gate-Source Voltage

VGS

Characteristic

Drain:Source Voltage (1)

: Symbol

Continuous Drain Current Tc=25°C

±20

Vdc

10

1.5

1.5

1.3

1.3

Adc·

1.0

0.8

0.8

Ad"

6.0

5.0

5:0

Adc

10

1.0

Drain Current-Pulsed (3)

10M

6.0

Gate Current-Pulsed

IGM

±1.5

Adc

Total P~wer Dissipation @ Tc=25°C
Derate above 25 ° C

Po

20
0.16

Watts
.W/oC

TJ. Tstg

-55 to 150

'oC

TL

300

°0

Continuous Drain Current Tc=100°C

Operating and' Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds
Notes: (1) rJ=25°C to 150°C

(2) Pulsetes!: Pulse width<300iAS. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

•..12t}8

N-CHANNEL
POWER MOSFETS

IRF710/711/712/713
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

V

VGs=OV

IRF711
350
IRF713

-

-

V

lo=2501lA
Vos=VGs. lo=2501lA

4.0

V

100

nA

VGs=20V

-100

nA

VGs=-20V

-

250

IlA

Vos=Max. Rating. VGs=OV

1000

Il A

Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

IRF710
1.5
IRF711

-

IRF712
1.3
IRF713
IRF71 0
IRF711
IRF712
IRF713

ALL

2.0

IGSs

ALL.

Gate-Sour.ce Leakage Reverse

IGSs

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

Static Drain-Source On-State
Resistance (2)

Forward Transconductance (2)

RDS(on)

ALL
ALL

Reverse Transfer Capacitance

Crss

ALL

Id(on)

ALL

t,

ALL

lc!(oII)

ALL

tl

ALL

ag
ags
agel

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain ("Miller") Charge

-

A

-

3.2

3.6

0

-

3.5

5:0

0

-

0

ALL
ALL

--

Vos>IO(on)XROS(on) max .• VGs= 1OV

VGs=10V. lo=0.8A

-

Ciss

Fall rune

-

0.5 1.0

Coss

Turn-Off Delay Time

A

ALL

Input Capacitance

. Rise TIme

-

Qt.

Output Capacitance

Turn-On Delay Time

Test Conditions

-

VGS(Ih)

1000n)

Max Units

IRF710
400
IRF712

Gate-Source Leakage Forward

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise specified)

140 150
35

Vos>IO(on)XROS(on) max. lo=0.8A

pF

50

pF

7.0

15

pF·

-

10

ns

20

ns

10

ns

15

ns

6.0

7.5

nC

1.5

-

nC

4.5

-

6.4

K/W

1.0

-

-

80

KIW
KIW

VGS=OV. Vos=25V. f=1.0MHz
see fig .. l0

Voo=0.5BVoss. lo=0.8A. Zo=500.
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. lo=2.0A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-to-Caae

RthJC

ALL

Case-to-Sink

RlhCs

ALL

Junction-to-Ambient

RthJA

ALL

-

Mounting surface flat. smooth. and greased
Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse wldth<300,.s. Duty Cycle... 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

SAMSUNG SEMICONDUCTOR

I

N-CHANNEL
POWER IfiIOSFETS

IRF710/711/712/713

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

IPulse Source current

IRF710
IRF711
IRF712
IRF713

ISM

(Body Diode) (3)

Diode Forward Voltage (2)

Type Min Typ
IRF710
IRF711
IRF712
IRF713

IRF712
IRF713

I

-

-

1.5

-

-

1.3

- - 6.0,
- - 5.0
- - 1.6
- - 1.5.
- 380 -

IRF710
IRF711

VSD

Test Conditions

Max Units
A
A

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

A

~

A
V

Tc=25°C, Is=1.5A, VGS=OV

V

Tc=25°C, Is=1.3A, VGS=OV

Reverse Recovery Time
ALL
ns TJ= 150° C, IF= 1 .5A, dlF/dt= 1OOA/,..s
trr
Notes: (1) TJ=25°C .to 150°C (2) Pulse test: Pulse width"300,..s, Duty Cycle.. 2%
(3). Repetitive rating: Pulse width/limited by max. junction temperature
2.64
2.42r----

tpLTl.,+

\

vGS=L

2.20

~

198

If

1.7 6

:!.

154

2.20

-

198

Vr;,s=6Y

1.76

1

1132

.!z

;,,

2

1.3
11 0

~

088

.e

066

!!i

Vos>IDlCWlIXRos.onjma:t

1 .54

:Ii

"~

r-J~Nsej~

~

Vr;,s=5V

~

0.44

0.2 2

110
~

0.88
066
0.44

;/J

0.22

W
W
-00
00
100
Yos. DRAIN-TO-SOURCE VOLTAGE (YOLTS)

./. Vj

/"

1W

2

4

r--

1.76

Iii'

II! 1.54

/

~

1 1.32

.1

V
1/

z

.I

0.44
0.22

er:..

12

14 .

IRF71 0, 1

1AF712,

f

IAF710:

1-

11'0~712'3

I
! O·'~==~T!'T:.~·~!:~~?C~M!.Ix.!IIII!~I~1
L ...
5 -'~E:: OPERATION IN THIS
.~

r-

v.-av

AREA IS LIMITED.
BVR~

6.4KIW

Vos-4V

2
4
8
8
VDS, DRAIN·TOoSOURCE VOLTAGE (YOLTS)

Typical Saturation Characteristics

c8

10

g . . ._

'Iii'

I
/~

10

vas-ev

)

G 0.88
0.86

~

~~

8

Typical Transfer Characteristics

./

1 . 10

~

v~=lo~

-L.. lresl

6

Yos, GATE-TOoSOURCE YOLTAGE (VOLTS)

Typical Output, Characteristics

2.20

TJ ""125 C C
TJ -=25°C
JJ-=-55°C

I

Vf3/3-4V

198

rt

SAMSUNG SEMICONDUCTOR

0.01
10

-iTllm'+l-1-+-++~++II+H+H

1.0

2

5
10
20
50
100 200
500
Yes, DRAIN-TOoSOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

270

N-CHANNEL·
POWER MOSFETS'

IRF710171117121713

2

5

Co;""

....

!:::=II

0-0

2

1.,..00 t:::P"

-~

1

NOTES

io"""

~

0=0.

~,--j

-

5

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

~-O. "~

I J 1111
II i 1111

21-""

-.

0.0 1
10

10

1 Duty Factor D=..!L

t,

2 Per Unit Base=Ru...c=6 4 Ceg C W
3 TJ_Tc"'PDIoIZo,JC (t).

-.

I I IIIIII

-.

5
10
2
5
10-,
2
5
10
11. SQUARE WAVE PULSE DURATION (SECONDS)

~

I I I IIII

1

2

1

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

3. 0

10

7

5

f 2. 4t-- r- 8l~ Pull Tesl
2. 1

...

1. 8

~

~
~

2

Vos>!Dlon)XRDSlQI\)ma.

!

~

1

~

0

!

o. 6

o.

./

,;""

J V~ t:2

t:r.c

--

"""- ~

~ ~ """ I:::::::
i"""'"
~

o

t-2

TJ':125 c I-O

0
5

2t--

o. 1

0.22 0.44 0.66 0.88 1 1 1.32 1.54 1.76 1.98 2.2·
I•• DRAIN CURRENT (AMPERES)

2.0

3.0

4.0

5.0

6.0

2. 5

5

t.,....-'

,. ."

5

V

0

j...-'

"""

Breakdown Vollage Va. Temperature

SAMSUNG SEMICONDUCTOR

......V

a

J
40
80
120
TJ. JUNCTION TEMPERATURE ("C)

/

V

/

L ~

o

V

5

5

-40

10

Typical Source-Drain Diode Forward Voltage

1.25

5""

j;I~C
VOD. SOURCE-TD-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Va. Drain Currant

.ciS

II

TJ=150°C
TJ=25°C

5

31(

0.7 5

p::

TJ=-55°C~

2

9

~

0

5

1.

,

180

o. 5

,..V
."

0
-40

VGS-10V

rOBAI
0

40
80
120
T~ JUNCTION TEMPERATURE ("C)

160

Normalized On-Resistance Vs. Temper~ture

271

N..CHANNEL
.POWER MOSFETS

IRF710/711/712/713
250

JJ

v,,=ol
'''''1 MHz

5

'"'Cgs+Cgd. Cds SHORTED

em-Cgd

I

r--- r- Coss=Cds+ CgsCgd
Cgs+Cgd,
iIICd&+Cgct
\

200

0

\\

C. .

5

\
50

,
ro..,
\
,"-. "' ........

o

10

1"-0-

J

V
o

em

20

:"

~

9

~

8

30

40

50

:!

7

~

6

!II
0

~,.

~
~

..
.I

.~

5
4
3

... v

. .V

4

6

8

10

Q •• TOTAL GAlE CHARGE (nC)

1. 6

I

J

z

2

Typical Gate Charge Vs. Gat..To-Source Voltage

2. 0

L,ll
If/fJJ..-2J

.,

,.

10 2A

/

5

V... DRAIN-TMOURCE VOLTAGE (VOLTS)
Sou~e Voltage

e

A~

Coos

Typical Capacitance Va•.Draln to

0

AV

0

r-.

or

~~

Vos=320V

f\-

o \

Vr:IS""aov

VDS=200~~

5.

V
~""I MEASURED wmt ~
CURRENT PULSE OF 2.C¥s

I

r-~
1.

2~

l""- t--....

.,

I ' I'--.

.........

....

o. 8

~IRF710.,

"

........

IFlF712. ,3

(~:~~E~6r ~r:~-

.......

i".

I'.. 1"\.

CS~

PULSE IS MINIMAL) .

o. 4

2

[\\

1
0
'2

3.
4
5
.~
7
8
I.. DRAIN CURRENT (AMPERES)

10

\

5

'" "

50

75

100

125

1

150

T A. AMBIENT TEMPERATURE (0C)

Typical On-Resistance Vs. Drain Current

0

25

Maximum Drain Current Vs. Case Temperature

I'.

'-.

0

\

'\..

5

~
o

20

40

60

80

100

120

r\.

140

160

TA. AMBIENT TEMPERATURE (OC)

·Power Vs. Temperature Derating Curve

·c8SAM~UNG SEMICONDUCTOR

272

N-CHANNEL
POWER MOSFETS

IRF720172117221723
FEATURES
•
•
•
•
•
•
•
•

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
T~220 package

TO-220

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF720

400V

1.8{)

3.0A

IRF721

350V

1.80

3.0A

IRF722

400V

2.50

2.5A

IRF723

350V

2.50

2.5A

II

MAXIMUM RATINGS
Symbol

IRF720

IRF721

IRF722

IRF723

Drain-Source Voltage (1)

Voss

400

350

400

350

' Vdc

Drain-Gate Voltage (RGs= 1.0MO) (1)

VOOR

400

350

400

350

Vdc

Gate-Source Voltage

VGS

Characteristic

±20

Unit

Vdc

Continuous Drain Current Tc=25°C

10

3.0

3.0

2.5

2.5

Adc

Continuous Drain Current Tc= 1 00° C

10

2.0

2.0

1.5

1.5

Adc

12

12

10

10

Adc

Drain Current-Pulsed (3)

10M

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power DissipatiolJ @ Tc=25°C
Derate above 25°C

Po

40
(}.32

Watts
W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds
Notes: (1) TJ=25°C to 150°C'

(2) Pulse teSt: Pulse width<300,..s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

273

.. N-CHANNEL

IRF720/721 1722/723

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Symbol Type

Characteristic

Drain-Source Breakdown
. Voltage

BVoss

Min Typ Max Units

-

-

V

VGS=OV

IRF721
350
IRF723

-

V

10= 250/lA

IRF720
3.0
IRF721

-

-

A

IRF722
2.5
IRF723

-' -

A

IRF720 .
IRF721

1.4

1.S

0

IRF722
IRF723

1.7

2.5

0

VGS(th)

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current (2)

10(on)

..
Static Drain-Source On-State
ReSistance (2)

ROS(on)

'\

Forward Transconductance (2)

ALL

V
.nA

-100

nA

VGs=-20V

250

/lA

Vos=Max. Rating, VGs=OV

1000

/lA

Vos=Max. RatingXO.S, 'ilGs=OV, Tc=125°C

VGs=10V,10=1.5A

-

Ciss

ALL

Coss

ALL

- 90 200
- 30 40
- - 40
- - 50
- - 100
- - 50
- 12.5 15
- 2.8 - 9.7 -

Output Capacitance
Reverse Transfer Capacitance

C,..

ALL

Turn-On Delay Time

t.i(on)

ALL'

t,

ALL

td(off)

ALL

tl

ALL

Qg

ALL

Gate-Source Charge

Qg.

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Rise Time

Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

Vos= VGS, 10=250/lA
VGs=20V

Vos>IO(on)XROS(on) max., VGS= 1OV

1.0 2.2

Input CapaCitance

Turn-Off Delay Time

-

4.0
100

ALL

·gl.

Test Conditions.

IRF720
400
IRF722

Gate-Source Leakage Forward

Gate Threshold Voltage

(Tc=25°C unless otherwise specified)'

460 600

IJ

Vm,>IO(on)XROS(on) max., 10=1.5A

pF
pF

VGs=OV, Vos=25V, f=1.0MHz
see fig. 10

pF
ns
ns
ns

Voo=0.5BVoss, 10=1.5A. Zo=5oo,
(MOSFET switching times are essentially
independent of operating temperature.)

ns
nC
nC

VGs=10V, 10=4.0A, Vos=O.S Max. Rating
(Gate charge is essentially independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junction-io-Case

RthJC

ALL

Case-Io-Sink

RthcS

ALL

Junction-to-Amblent

RthJA

ALL

- - 3.12
- 1.0 - - SO
'

KIW
K/W Mounting surface flat, smooth, and.greased
K/W Free Air Ofjeration

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300/ls, Duty Cycle<2%'
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

N-CHANNEL

IRF720/721 1722/723

POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode ~orward Voltage (2)

VSD

Type

Min Typ

Max Units

Test Conditions

1RF720
IRF721

-

-

3.0

A

IRF722
IRF723

-

-

2.5

A

IRF720
IRF721

-

-

12

A

IRF722
IRF723

-

-

10

A

-

1.6

V

Tc=25°C, Is=3.0A, VGs=OV

-

1.5

V

Tc=25°C, Is=2.5A, VGs=OV

IRF720
IRF721
IRF722
IRF723

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

~

-

Reverse Recovery Time
All
450
ns TJ=150°C, IF=3.0A, d1F/dt=100AlI-IS
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width"300,..s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
5

~·~GSa10V
VM-SV

I
I

I

~ -Bo,.ts Pulse Test
VOS>b.""lXRos!anl .....

60fS Pulse Test

I

13
II:

Ir

W
II.

~

!Zw

II

7

VG&=5.5V

V

3

I-

Z
w

VGS-5V

§

i::>
u

U
Z

~

~~:~!~~~"

~

f-VGS. 4.SV
1

II:

TJ'=-S5 O C.......::

Q

.9

.9
1

11
IjJ

Vos""4V

~I
o

.50

100

150

200

250

300

o

1
2
3
4
5
6
Vas, GATE-TO-SOURCE VOLTAGE (VOLTS)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Transfer Characteristics

Typical Output Characteristics

8~ Pulse Test
4

I

3

~

,

VGS-1

h /v..l7V

I
Vas""S.5V

~

~IRF720,

l

Voo-45V

1m•

E=t~C-250C
VGs """4V

01
4
8
12
16
VDS, DRAIN-Ta-SOURCE VOLTAGE (VOLT!;)

Typical Saturation Characteristics

.c8

r..
I'

1.0

If
o

1

~~FrJ

.1

1

~~RFr;2. 3

Vos=5V-

)

1£

<:;j::l

1AF720,1

10

SAMSUNG SEMICONDUCTOR

20

h~Tr·ITm'.jr·--+~-+l:=.j..~"7~.j..~:-~~-","~~~~

1.0.2

5
10
20
50
100 200 500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) .

Maximum Safe Operating Area

275

N-CHANNEL

IRF720/721 1722/723

POWER. MOSFETS
I

1

I

0-05

~

I::;;:; i21~

D 02

II""'"
0-01

NOTES

I--"r-

I

o

5

0""002

IIUL

005

~-l

SINGLE PULSE (TR'ANSIENT
TH AMAL IMPEDANCE)

0=0.01"

1 Duty Factor

J.... ......

.. I

0.0 I
10

10

~

1"
0

5

2

5

.

10-

2

5

..

'O=~
t.

Per UnIt Base-RtI>JO""a 12 Peg CfW
TJ_Tc=POMZu,JC (t)

2
3

'm 10

ILl W1' JJ J

10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration

.

10

~~~~~I.L

J55'~
d:
r)25°0

,/"
3

/
/ /

.~

'11//

11/V

~

~

f--"'"

T.J'25 C

---

TJ ""25°C

-

5

r-

2
0

V

Tr

r

o. I
0123456
"

VSD. SOURCE-To-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Va. Drain Current

Typical Source-Drain Diode Forward Voltage

125

2.5

J....--" I--'

z'

V

'0 5
'

..",..

6~ 0.95 , , -

L

~

g;
~

~

2.0

V

a:

~S

~~

V

./

1.5

§~

V

~a:

~i

~-

i

.."
..III
z

1.1 5

Ili~
.. c
"IE
a: a:

lS0°C

Trj5 0 C

2
3
4
10. DRAIN CURRENT (AMPERES)

Ie
....

/ ~ ~'50OC

0

O

J

....... ~

~

I-"

5

~

I

0.85

./

1.0

/.

C
a:
Q

V
,/

,/"

..........

VGS=10V

"~lr- r---

0.5

a:
0.7 5
-40

o

40

80

120

T J. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

'60

V

o
-40

O.

40

80

120

laO

T J. JUNCTION TEMPERATURE ('C)

. Normalized On-Resistance Vs• .Temperature

276

N-CHANNEL
POWER MOSFETS

IRF720172117221723
1000

25

VGSJo

g::';!;,+e"'1Cd. "\""",,0
Coss-Cds+ CgaCgd
Cgo+Cgd

800

i..
U

~
...C

aCds+Cgd

\

600

Vos""SOV
Vos""20OV
Yos"'"320V

r--...

c..

U

C1
ci

200

~~

0

400

/. ~

,\

1/

\' ~

o

f:0 ~

"

1

"""
eros

10
20
30
40
Vas. ORAIN-TO-SOURCE VOlTAGE (VOLTS)

50

1p=4A

V

o

4

8

12

16

20

QI' TOTAL GATE CHARGE (nC)

Typical Capacitance Vs. Drain to Source Voltage

Typical Gate Charge Va. Gat..To-Source Voltage

/11

v~-,oJ

VI

IV

4

V",=20V

VJ

3

----r-

j V

j'-.... 1"-00..

. . .V

2

~ P"

2

Roston!

MEASURED WITH

CURRENT PUlSE OF 2 OJISDURATION INmAL TJ=25°C

Ti

(HEATING EFFECT~T

1

LSE

o

3

MNljAW

15

6
9
12
I•• DRAIN CURRENT (AMPERES)

Typical On-Resistance Vs. Drain Current

40

~

35
0

1

t""---

f"""'-. ~F720'1

IRF722'~ r-....

r....

"'I'"
"~

0
25

125
100
50
75
TA. AMBIENT TEMPERATURE (OC)

~

J

Maximum Drain Current Vs. Case Temperature

1\
l\.

5

"I\.'\

;"

0
5

0

1\

5

o

20

,

40
60
80
100
120
TA.' AMBIENT TEMPERATURE (OC)

i\.

140

160

Power Va. Temperatura Derating Curve

c8

SAMSUNG SEMICONDUCTOR

(277

N-CHANNEL

POWEFJ 'MOSFETS

IBF730173117321733
FEATURES
• Low ROS(on)
.
• Improved inductive ruggedness
•
•
•
•
.•
•

TO-220.

Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

PRODUCT SUMMARY

-

Part Number

vos

ROS(on)

10

IRF730

400V

1,00

·5.5A

IRF731

350V

1.00

5.5A

IRF732

400V

1.50

4.5A

IRF733

350V

1.50

4.5A

..

- - _ ..

.,
.,

MAXIMUM RATINGS
Symbol

IRF730

IRF731

IRF732

IRF733

Unit

Drain-Source Voltage (1)

Voss

400

350

400

350

VC!c

Drain-~ate

VOGR

400

350

400

350

Vdc

Characteristic

Voltage (RGs= 1.0MO)(1)

Gate-Source Voltage

Vdc

±20

VGS

Continuo'us Drain Current Tc=25°C

10

5.5

5.5

4.5

4.5

Adc

Continuous Drain Current Tc=1 OO°C

10

3.5

3.5

3.0

3.0

Adc

10M

22

22

18

18

Adc

Drain Current-Pulsed (3)
Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ "(c=25°C
Derate above 25°C

·po

75
0.6

Watts

Operating and Storage
Junction Temperature Range

TJ, Tstg

':"'55 to 1.50

TL

300

Maximum 'Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widthE;;300IlS, Duty CycleE;;2%
(3) Repetitive rat.ing: Pulse width limited by max. junction temperature

,c8

SAMSUNG SEMICONDUCTOR

- :< '

;':.'!f(~.C
°C

,

°C

N-CHANNEL
POWER MOSFETS

IRF730/731 1732/733
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Drain-Source Breakdown
Voltage

BVoss

Type

(Tc=25°C unless otherwise specified)

Min Typ

Max

Units

V

VGs=OV

V

10= 250,..A

IRF730
400
IRF732

-

-

IRF731
350
IRF733

-

-

Test Conditions

--

VGS(th)

ALL

2.0

-

4.0

V

Vos=VGS, 10=250,..A

Gate-Source Leakage Forward

IGSS

ALL

-

-

100

nA

VGs=20V

Gate-Source Leakage Reverse

IGSS

ALL

-

-

-100

nA

VGs=-20V

Zero Gate Voltage
Drain Current

loss

ALL

-

250

,..A

Vos=Max. Rating, VGs=OV

1000

,..A

Vos=Max. RatingXO.8, VGs=OV, Tc=125°C

IRF730
5.5
IRF731

-

IRF732
4.5
IRF733

-

Gate Threshold Voltage

On-State Drain-Source
Current (2)

10(on)

Static Drain-Source On-State
Resistance (2)

Forward Transconductance (2)

ROS(an)

gfs

-

A

Vos>IO(on)XROS(an) max, VGs= 1 OV
--

0.8

1.0

0

IRF732
IRF733

-

1.0

1.5

0

ALL

VGs=10V,10=3.0A

3.0 4.4

Input Capacitance

C ,SS

ALL

Cass

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

td(an)

ALL

t,

ALL

td(aff)

ALL

-

Fall Time

A

-

Output Capacitance

Turn-Off Delay Time

-

IRF730
IRF731

--

Rise Time

- - f----

-----------------;-----

--

-

U_ Vos>IO(on)XROS(on)

f---- -

730

800

pF

100

300

pF

50

80

pF

-

30

ns

35

ns

55

ns

35

ns
nC

max., 10=3.0A

--

VGs=OV, Vos=25V, f=1.0MHz
--

Voo=0.5BVoss, 10=3.0A, Zo=150
(MOSFET switching times are essentially
independent of operating temperature.)

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

-

18

30

Gate-Source Charge

Qgs

ALL

-

4.0

Gate-Drain ("Miller") Charge

Qgd

ALL

-

14

-

RthJC

ALL

Case-to-Sink

RthCS

ALL

1.0

-

K/W Mounting surface flat, smooth, and greased

Junction-to-Ambient

RthJA

ALL

-

-

80

K/W Free Air Operation

VGs=10V, 10=7.0A, Vos=0.8 Max. Rating
(Gate charge is essentially independent of
nC .operating temperature.)
nC

THERMAL RESISTANCE
Junction-to-Case

-

1.67' K/W

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"';300,..s, Duty Cycle"';2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

SAMSUNG

~EMICONDUCTOR

279

I

,

,,.,.

N-CHANNEL

IRF730/731 1732/733

POWER MOSFETS :

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Type

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD'

Min Typ

Test Conditions

Max Units

IRF730
IRF731

-

-

5.5

A

IRF732
IRF733
IRF7.30
IRF731
IRF732
IRF733

-

4.5

A

22

A

-

18

A

IRF730
IRF731

-

1.6

V

Tc=25°C. Is=5.5A. VGs=OV

IRF732
IRF733

-

-

1.5

V

Tc=25°C. Is=4.5A. VGS=OV

-

~

Modified MOSFET symbol
showing the integr81
reverse P-N junction rectifier

-

Reverse ReCOvery Time
ALL
600
ns TJ= 150°C. IF=5.5A. dIF/dt=100Al,.s
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width<300,.s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
12

1;

10

" ,;,\

..

'13
...:Iiw

eo,..

~se

Test

-

v~rv- -

~~~R:e:J

}

8

II:

V

8

Iii"
w

J

6 .6V

II:

...
W

~

~
I-

Z

III
"

I-

Z

6

W

;:>

~
i!i

,

10

-a

ii

II:
0:.

VGB~5V

;:>

"~

I'

4

4

TJ =125°C

II:

T}"'25°C

R

TJ --55°C

Q

.Ii

V

-4.5V

1

50
100
150
290
250
VDS. DRAIN-TD-SOURCE VOLTAGE (VOLTS)

300

o

1

~

/

L. i--"'"

4

~

~

5

6

OPERATKlN IN THIS

AAEA IS WITED
BV~

--1/(

'"::,':Z:;1.

T ri
3

I

,,

r--IRF730, 1

v~-L

IRF732,'3

I

~.

4

lb2

'vi-av
asv
"/. ~

8

3

Typical Tran!lfer Characteristics

VOS-=1p

ao,.s ...... IT..,

2

V.... GATE-TD-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10

111

Iffl
hV

V -4V

o

---.jj

,,

,/

I

'o,.s

'l'r
'Ii

,-

VGS-4.5V

,r

~
r--:-

I

I----

VGS-4V

2
4
6
8
Vo•• DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

c8SAMSUNG SEMICONDUCTOR.

10

Tc ... 25 ° C
TJ -l50°C MAX
At..c-1 67 KIW
SJNGLE PULSE

1RF731,3

11111111

,'r"73y

o. 1
2.0

'

I

M

5.0
10
20
50
100 200 500
V... DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Araa

N-CHANNEL
POWER .MOSFETS

IRF730173117321733
2

~

I

1I

II
.

!

!

0
0';'05-

5

2

,

i.--'

D~O 1
i""""

:;;ill'

~f-'

0=0.05

1

:

';;: ::iii~

....

0- "

NOTES

~~

0-0.02

5~"'OOl

i'"'"
2

I-

SINGLE PULSE lTRANSIENT
THERMAL IMPEDANCE)

t-

p.-i
'.

1 Duly Foc'", D=.!c
;
2 Per Unit Base-RIII./C",1 67 Deg C/W
3 TJI.rTc=PouZcnJC (t)

~

1

1

3TLJL

-.

5

10

2

5

10

-,

2

5

10-,

2

5

I 1 ]']]11'

-.

10

2

.

5

I

I I I I I II
2

1

10

5

11. SOUARE WAVE PULSE DURATION (SECONDS.

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

10

10'

80j.iS Pulse Test ~
Vos>Io.OnlXRos..",,! .....

TJ =2SoC
T, 150·e

ii)

i

w
w
"IE
w

V

~V

j

2

0

~

-'

:::>

U

~

TJ =125'C

a:

c

.....

w

TJ =150"C

rn

a: 10

w
>
w

W

"

10

a:
a:

TJ =25"C

V. . . . I--'

4

t

!Z

TJ=-55°C

I

~

b'

~

I

t--

a:

8

TJ 25°C

a:

j

2

4

6

8

01 0

10

2

10. DRAIN CURRENT (AMPERES)

3

V.", SOURCE·TO-DRAIN VOLTAGE (VOLTS.

Typical Transcounductance Vs. Drain Current

Typical SOurce-Drain Diode Forward Voltage

1.25

2.5

'w

~g

w

zU

1.15

C

z

g
~iS 1.05

Ww
i~

~

wC

U:Ii

si 0.95 ....... ~
a: a:

.....

iii
w

a:

J.....-" I--'

~6
w~

V
1.5

~:;

........

~~
6
z

~C
a:
c

i
a:

0.85

L

1.0

~
0.5

"

0.75
40

o

40
80.
120
TJ. JUNCTION TEMPERATURE (OC.

Breakdown Voltage Vs. Temperature

=8 S~MSUNG

SEMICONDUCTOR

160

v

......... V

U:::;

~-

:c~

2.0

Iii

I--'

~

,/'

/
.".
VGS=10V
lo""'3A

o
-40

0
40
80
120
TJ. JUNCTION TEMPERATURE (OC)

Normalized On-Resistance Vs. Temperature

160

N-CHANNEL

"

IRF730/73:1 1732/733

POWER MOSFETS

2000

25

v~so

J

CBs~Cgd

J..c

I

I

"""

\

40

~

=Cds+CgcI

I.J\

~

.L

1

to=(A

/

Coso

V

0

V... DRAIN-TO·SOURCE VOLTAGE (VOLTS)

8
16
24
32
, a g• TOTAL GATE CHARGE (nC)

Typical Capacitance V,. Drain to Source Voltage

Typical Gate Charge Vs. Gat.To-Source Voltage

20

30

40

50

2.5

VJ.'0V V

6.0

/. K=ov

!!II

f[

I

/.. V

1. 5

~~

i!
l - I-'

I

2., .

Ro&on. MEASURED WITH CURRENT PUlSE OF .
2 o,.s DURATION. INITIAl ',825"1_1-~~I~ ~~~~I1OF
I"

.. ~ o. 5
l§

J

~

4.5

!i

'~I""
1

40

7.5

2. 0

I

10

~
r10

~

VDS=80V,,~

VDS=200~.~
V06 =320V IRF730.~

-

~

~

~

15

I!'

J\

\' I'..

I

20

w

Co88=Cds+ _ _
gd_
Cgs+Cgd

iw 1200

cj

I

t-l MHz
CIss=Cg8+Cgd, Cds SHORTED

1600

10
15
20
I.. DRAIN CURRENT (AMPERES)

25

~
!Ii

oR

~

-......

i"-b.

l"'- I"'-

3.0

I"""'-

~730.1·

~,~

..........

i"'-..

J'.,. I'\.

~

1.5

o

25

50

75

'.00

125

,

1\

1 50

Te. CASE TEMPERATURE ('C)
Maximum Drain Current VS. I,;ase ",mper.tuTe

Typical On-Re.istance V,. Drain Current

80
70

I-- ~

"1\

0

''\

'\

0

'"

0
0
0

o

20

40

",-.

"

80
80
100
120
To. CASE TEMPERATURE ('C)

, I

r\.

140

Power Va. Temperatura Derating Curve

c8

SAMSUNG SEMICONDUCTOR

• :;282

N..CHANNEL
POWER MOSFETS

IRF7 4017 4117 4217 43
FEATURES
•
•
•
•
•
•
•

Low ROS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating' area
Improved high temperature reliability
• TO-220 package

TO-220

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF740

400V

0.5511

10A

IRF741

350V

0.5511

10A

IRF742

400V

O.BOI1

B.OA

IRF743

350V

O.BOO

B.OA

~

._-

..

I

MAXIMUM RATINGS
Symbol

IRF740

IRF741

IRF742

IRF743

Unit

Drain-Source Voltage (1)

Characteristic

Voss

400

350

400

350

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOGA

400

ilf350

400

350

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Continuous Drain Current Tc=25°C;:

10

10

10

B.O

B.O

Adc

Continuous Drain Current Tc=100°C

10

6.0

6.0

5.0

5.0

Adc

Drain Current-Pulsed (3)

10M

40

40

32

32

Adc

Gate Current-PulsM
Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

IGM

±1.5

Adc

Po

125
1.0

V-!/oC

TJ.Tstg

-5510150

°C

TL

300

°C

Maximum Lead Temp. for Soldering
Purposes. 1/B" from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width~300/AS. Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. Junction temperature

ciS

SAMSUNG SEMICONDUCTOR

.".

Watts

N-CHANNEL

IR'F74017 41114217 43

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Chatacteristie

Drain-SQurce Breakd?wn
Voltage

Symbol

BVoss
-

Gate Threshold Voltage

Type

Min

-

V

VGs=OV

lRF741
350
IRF743

-

-

V

10=250",A

4.0

V

Vos=VGs. 10=250",A

100

nA

VGs=20V

-

-100

nA

VGs=-20V

250

",A

Vos=Max. Rating. VGs=OV

1000 ",A

IRF740
10
IRF741

-

IRF742
8.0
IRF743

-

ALL

2:0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

-

A

-

A

-

0.30 0.55

0

-

0.60 0.80

n

Forward Transconductance (2)

gl.

ALL

4.0

Input CapaCitance

Ciss

ALL

Output Capacitance

Coss

ALL

C'SS

ALL

-

td(onl

ALL

-

t,

ALL

td(o"l

. ALL

tl

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Og

All

Gate-Source Charge

Ogs

All

'Ogd

ALL

-

Revel'1>e Transfer CapaCitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

,Gate-Drain ("Miller") Charge

Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

Vos>IO(onIXROS(onl max .• VGs= i OV

IRF740
IRF741
Static Drain-Source On-State
ROS(onl
ReSistance (2)
IRF742
IRF743

...

'Test Conditions

Max Units

-

VGS(thl

10(onl

Typ

IRF740
400
IRF742

Gate-Source Leakagfil Forward

On-State Drain-Source
Current (2)

(Tc,:,25°C unless otherwise specified)

VGs=10V.lo=5.0A

7.0

-

1300 1600

(J

Vos>IO(onIXRos(onl max.: 10=5.0A
-.

pF

250

450,

pF VGS=OV. Vos=25V. f= 1.0MHz

50

150

pF·

-

35

ns

15

ns

90

ns

35

ns

41

60

nC

6.0
35

-

VQo=0.5BVoss. 10=5.0A. Zo=4.7 0
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. 10= 12A. Vos=0.8 Max .• Rating •
(Gate charge is essentially Independent of
nC pperating temperature.)
nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

All

-

Case-to-Sink

RthCS

ALL

~

Junction-to-Ambient

RthJA

ALL

-

-

1.0

K/W

1.0

-

K/W Mounting'surface flat. smooth. 'and, greased

-

80

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) pulse test: Pulse width<;300Il5. Duty Cycle<;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

.: . j : " ,\\

c ,.1.284'

N-CHANNEL
POWER" MOSFETS

IRF7 40/7 41/7'42/7 43

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Type

Continuous Source Current
(Body Diode)

-

-

10

A

·15

IRF740
IRF741
IRF742
IRF743

Min Typ

Max Units

Test Conditions

-

-

B.O

A

Pulse Source Current
(Body Diode) (3)

IRF740
IRF741

-

-

40

A

ISM

IRF742
IRF743

-

-

32

A

-

-

V

Tc=25°C, Is=10A, VGs=OV

VSD

IRF740
IRF741

2.0

Diode Forward Voltage (2)

IRF742
IRF743

-

-

1.9

V

Tc=25°C, Is=B.OA, VGs=OV

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

~

-

Reverse Recovery Time
ALL
BOO
ns TJ=:150°C, IF=10A, dlF/dt=100Allls
trr
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth"300IlS, Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
0

I

VGS""10V

5

8~PulseTest

VG8=-8V

IV

5

~ITJ=125QJ

0
VGS 711- f--

0

I

~~'~25.cl

j

5

T'~-55·r

I

5

80j.iS Pulse Test

VGS""6V- f--

VOO>lD1an1 XROSIonl mo.

0

I

5

!1=12soq,
TJ=-55°C

VG8=4V

o

20
40
60
80
100
V... DRAIN-TD-SOURCE VOLTAGE (VOLTS)

o

120

2

~

~

fY

vy

/:

.

Ii)

VGS=7V

/

?

)'"

8

10

12

14

OPERATJON IN THIS

5r-r-2

~

:IE

S

I-

Z

IIJ
II:
II:

VG,S=6V

:::>

<>

AREA IS UMITED
IRF 740,1

''i7Lt1

,RlU\ v"" ,

II:

~~

5

10 2

Vos""8V

~

0

6

Typij:lll Transfer Characteristics

lj V

5

4

Vos-l0Y

aJpulselesl
0

.$l.

VGS. GATE-TD-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

5

J

5r--~'~25.cl':U1

VGS..Is- f-

0

IRF 742,3

5

"

'm.
II

," 'I ,&1.1...

2

lOOms
VGS- 5 V -

21--+_1t-+tH-ttI~++I-tt+ti'RF 741.3~
VGS=4V

2
4
6
8
VOS, DRAIN-TCNlOURCE VOLTAGE (VOLTS)

Tvoical Saturation Characteristics

c8SAMSUNG SEMICONDUCTOR

10

-it

~ll"'7Iu..J.Ul,,;,;;--;;~~t~F74~i2-,",:J1~

0.1 '::-0
1

5

VDS.

10 20
50
100 200
500.
DRAIN-TCNlOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

i

285

N-CHANNEL
POWER MOSFETS

IRF7 4017 4117 4217 43
I

2

1

ffi

! f:
:~

> a::

1.

5 t-D-

O.

I-

to. 21 0 -

~

fiJ~

0

0 1 0- . 5

~i

i

~,--j

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

0=0

u~

NOTES

IfLJL

D-QQ~

~ ~ 005

roo

j..:~

2

~!

Nit!

,

0

~~

~~
Wz

,

I

iii

1 Duly Factor D=..!!..
t,

2

2 Per Unit Base=Ru.JC""l 0 Ceg CIW

3' TJJrOTc=PDM ZNc It)

1110-.

-.

00 1
10

I 111111'

10- 3
1 0 -,
5
2
5
10 -,
2
11. SQUARE WAVE PULSE DURATION (SECONDS)

2

5

I I I I III

1·

5

2

10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

5

103

r-r-l..L res!

5

VWID!onIXRl'IS("", .....

2

2
TJ'''''-55 c C

V-

9

V V
V

I

6

IlL
3

TJ~21o~ i::::=

i"""

r--

TJ-JsoC

"

5

f....-

I'"

TJ ,""150°C

TJ -25°C

I

0

l
L
,

r---

A

2

5

1 r-T

J

1. 0
5

10

15

20

o

25

2

150·C

W [-TT',

2

1

10. DRAIN CURRENT (AMPERES)

2

3

4

Vso. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Va. Drain Current

Typical Source-Drain Diode Forward Voltage

1.2 5

2. 5

~

;

5
~

V-

5

5/

I--'

i-"'"

~I

,,- 5

l/

'"IE

V

~i

1. G

~
Q

,

I

o. 5

~-

o

40

eo

120

T J. JUNCTION TEMPERATURE l°c)

Breakdown Voltaae Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

- ""

./

,/

.",

a:

-40

V
~

li!c

5

0.7 5

V

a:

/
L

2. 0

v... ,ov
ID.. 5A

0
160

-40

0

. 40

80

120

180"

T J. JUNCTION TEMPERATURE (OC)

Normalized On-ResI8lance. Va. Temperature

286

N-CHANNEL
POWER MOSFETS

IRF7 4017 4117 4217 43
200

w~ v~-o
1=1 MHz

160

O~ .....

u"

5

Clss=Cgs+Cgd. SHORTED

I

Cms-Cgd

I

a

f--Coss"'Cds+~

Cgs+Cgd

~Cds+Cgd

,

\

iw 1200

I~

JJ

5

vos=80V

r--

0,\ r\\

40a

c,"

~

"-

\

I\.

..........

I"'-

c.ss

.....
o

10

Vns""200i~

V08=320V, lRF 740,2

C""
15

20

25

30

-

35

[I
45

IDj12A

1/

r--

40

50

20

2.0

1.6

t---

60

..........

CURRENT PULSE OF

...........

2

r-...
..........

r-......

..............

I'-....

6

..........IAF 740,1

r-:....

JRF 742,3
VGS=10V

""" i'...

4

i'..: i\.

1"\

V......

...-

4

10

~~

20

,

Vos~2OV

2

30

100

..........

20j.iS DURATION INITIAL TJ=25°C (HEATING
EFFECT OF 2.0JlS PULSE IS MINIMAL)

6

60

Typical Gate Charge Vs. Gat..To-Source Voltage

10

-

40

Qg. TOTAL GATE CHARGE (nC}

Typical Capacitance Vs. Drain to Source Voltage

I

W

I

5

VDS. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

Roston! MEASURED WITH

,.

50

40

10. DRAIN CURRENT (AMPERES}

o

25

50

75

100

125

,

~

150

TA. AMBIENT TEMPERATURE ('C}

Typical On-Resistance Vs. Drain Current

Maximum Drain Current Vs. Case Temperature

160
140

/if

i

12 O~
100

II
I

.....

"'\

I\..

"'-

60
6a

"'\

I\..

"'\

a

i\.
"'\

a
a

20

40

60

80

100

i\.

120

TA. AMBIENT TEMPERATURE ('C}

'"

i\.

140

160

Power Vs. Temperature Der.tlng C!'rve

c8~AMSUNG SEMICONDUCTOR

287

'N-CHANNEL
',,' POWER,MOSFE'TS
j ,"

FEATURES
•
•
•
•
•
•
•
•
•

Low RDS(on) at high voltage
Improved Inductive ruggedness
Excellent hlgh'voltage stability
Fast switching times
Rugged polysillcon gate cell structure
.Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO:'220 package

TO-220

PRODUCT SUMMARY
Part Number

VDS

RDSCon)

ID

IRF82Q

5QQV

3 ..00

2.5A

IRF821

45.0\1

3 ..00

2.5A

D

~

G

~

IRF822

5QQV

4 ..00

2.QA

IRF823

45QV

4 ..00

2.QA

'

5

MAXIMUM RATINGS
Characteristic

Symbol

IRF820

IRF821

IRF822

IRF823

U"it·

Voss

50.0

450'

50'0'

450'

Vdc

Drain-Gate VOltage (RGS=;ol.QMO) (1)

VOOR

5.00'

45.0

500'

450'

Vdc

Gate-Source Voltage

VGS

Drain-Source Voltage (1)

±2Q

Vdc

Continuous Drain Current Tc=25°C

10

2.5

2.5

2.0'

2 ..0

Continuous'Draln Current Tc = 1 0'.0 ° C

io

1.5

1.5

1.0'

1 ..0

Adc

Drain Current:""PuiSed (3) .

10M

10'

1.0

8 ..0

8 ..0

' Adc

Gate Current-Pulsed

IGM

+1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

40'
.0.32

Watts
W/oC

TJ, Tstg

-55 to 15.0

°c

TL

3.0.0

°c

Operating and Storage
junction Temperature Range
Maxim,um Lead Temp. for Soldering
, .Purposes, 1/8" from case for 5 seconds

Not..: (1'1 TJ=25°C to 15Q·C
(2) pUlse test: Pulse widt~3QQl's, Duty Cycle4t2%
(3) Repetitive rating: PlJlse width limited by max: junction temperature

Adc

N-CHANNEL

IRF820182118221823

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

BVoss

Type

Min Typ

-

-

V

VGs=OV

IRF821
450
IRF823

-

-

V

10=250"A

4.0

V

Vos=VGs. 10=250"A

100

nA

VGs=20V

-100

nA

VGs=-20V

250

"A

Vos=Max. Rating • .vGs=OV

1000

"A

Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

-

A

-

-

A

VGS(th)

ALL

2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

10(on)

IRF820
2.5
IRF821
IRF822
2.0
IRF823

Vos>IO(on)XROS(on)

IRF820
IRF821
Static Drain-Source On-State·
ROS(on)
Resistance (2)
IRF822
IRF823

-

2.0

3.0·

(}

-

3.0

4.0

(}

Forward Transconductance (2)
Input Capacitance

ALL

1.0 1.75

-

CiSS

ALL
ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

Id(on)

ALL

t,

ALL

Capacitance

Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
I Gate-Drain

("Miller") Charge

max .•

VGs=lOV

VGs=10V.10=1.0A

gfs

Coss

I Output

Test Conditions

Max Units

IRF820
500
IRF822

Gate-Source Leakage FOl")Nard

On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise specified)

-

I}

350

400

90

150

pF

30

40

pF

-

60

ns

50

ns

Vos>IO(on)XROS(on)

max.

10= 1.0A

pF

td(off)

ALL

-

~

60

ns

tf

ALL

-

-

30

ns

Qg

ALL

-

11.5

15

nC

Qgs

ALL
ALL

-

2.1

Qgd

9.4

-

nC

K/W

nC

VGs=OV. Vos=25V. f=1.0MHz

Voo=0.5BVoss. 10= 1.0A. Zo~501o.
(MOSFET switching times are essentially
independent of operating temperature.)

VGS=10V. 10=3.0A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature.)

THERMAL RESISTANCE

IJunction-tll-Case

RthJC

ALL

lcase-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

3 .. 12

1.0

-

K/W Mounting surface flat. smooth. and greased' .

-

80

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse wldthiD(ontXAosronltI'ID

5
4

lit- ~J"'125ob
r---:-

1",.25·C
,
,

TJ',,'-55°C

8~PUIseTest

II:

4
Vas-B.DV

:IE
~

II:
II:

3

3

:>
U

~

II:
C

2

VG""s 5V

2

.9

TJ =125°C ..........

Vos""'S,ElV

1

,

VGS ",,145V

1

t-- T _2S c
o

J

T,=t 55'c..::::

f--

Vas-40V

o

50
100
150
200
250
Vos, DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

.L.

2
,4
6
,6
10
,12
VGs, GATE-TQ-SOURCE VOLTAGE (VOLTS)

10

Typical Output Characteristics.

14

Typical Transfer Characteristics

5

10 2
.... ,o#../.

f-'-

t-.JpuI..ITes, ./,V

4

i

I

~

)

I

VGll-6.5V

I. /.
V/

~

v....I,ov'

~

.... tFlF 812.3

5
-IIAF

2
IRF

1.

82O.'

r"-

62~!~~

0

~ ;~:::~:c
5~ r-

,

,
"~.

!'Iorr

'ma

MAX.

"",-3, '2 KJW

'-;- I- SINGLE PULSE

Voe.}sv

Ii'

2

'Yos-4.0V

4

~.v-,'

81o,

IAF

0

z

':)V

8

12

16

Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

/ Typical Saturation Characteristics

c8

l'

V

I'

2

OPERA11ON IN THIS
AREA IS UMITED

2

VGS-6.DY

1/V

3

·0

5

V,.·7V

SAMSUNG SEMICONDUCTOR

o. 1
20

1.0

2

1111111
5
10

IAF""'~~ [,loW,
IIII

Mo. 2 -

'ODma

20
50
100 200 ,500
Vos, DRAIN-Ta-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

,290

N-CHANNEL
POWER MOSFETS

· IRF820182118221823

tl.

l

2

0

~2

0-05

~= o. 5
;:w

\

u!!>
~w

i

H; ~ o. 2

~a
aD.

....:

t::; ~P""
i""':

......

I
0-0.1

1

NOTES

Ir1SL

I-

D-0.05

:IE ...

~-J

0-002

Ho.o5

SINGI.£ PULSE (TRANSIENT

,~
!!

j....-

D-"

THERMAL IMPEDANCE)

0""0.01 ",.

.J..1""

0.02

1 Duly Factor O-"!!'-

I Ilill

t,
2 Per Unit Base=R.tuc""3 12
3

,q

I

0.0 1

10~

I IIIII .,
5
10

10-4

2

5

10.,

2

5

I 1'11111'

10.,

Deg C/W

T..-Tc""POMz....JC It)

IIIIW
10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

103

5

5

~~~lftU

4

'TJ--5~

,.""

3

/' . / ~

TJ=125 D C

5
TJ-25°C

I--

V / ' ~ I---

2

2

TJ ",,25°C

~

2

V

Ih Y
J,

1

W

"

TJ =150 G C

"

'(
2

3

4

5

o

1

10, DRAIN CURRENT (AMPERES)

2

3

4

6

Vso. SOURCE·Ta-DRAIN VOLTAGE (VOLTS)

Typical Transconductance VI. Drain Current

Typical Source-Drain Diode Forward V!)ltage

5

2. 5

5

0

l-""

5

. . . .V
./

I-""
"""'- ~

""""

V
V
~

5

V

""

./

0
~

5

o

40

80.

.120

T J. JUNCTION TEMPERATURE ("C)

Breakdown Voltaae Vs. Temperature

ciS

T-j5<>C
J

1. 0

o

5.......-

TJ -150"C

SAMSUNG SEMICONDUCTOR

160

o

40

..........

,/

""

0

V.-1OV

40

80

120

TJ. JUNCTION TEMPERATURE ("C)

Normalized On-Reslstance VI. Temperature

180

N-CHANNEL
·POWER
. . MOSFEts
'.
I

~

"

1000

5

jY"~o
f-1 MHz

C\ss~Cgs+Cgs. "'" SH \men

8

I.

Cnos=Cgs

f----

cOos=Cdo+=Cgs
OCdo+Cgs

5

Vos-100v

JD8-2~~

Vos-40OV. IRF820,~

00\

AI ~

Cioa

00\

5

\ ..... :-......

Coos

..... 1'00
. 0

,

0

.......

I

Cnos

10

20

30

40

50

V... DRAIN-TO-SOURCE VOLTAGE (VOLTSI
Typical Capacitance VI. Drain to Source Voltage

1

LMLlJCU~PU1±

0

2.o,.s DURATION.
INIl1Al. TJ -26°C.
(HEATING' EFFECT OF 2.0,-

9

a

L
4

2. 4

6

8

t.......

r--..... 1'-0.

4

If

3
2

1

o

6

8

10

12

14

16

18

20

I•• DRAIN CURRENT IAMPERESI
Typical On-Reslstance Vs.· Drain Current

40
35

'\

'"

i"-

LS ~

I'\:l\

0
~

~

n

_

.

la

~

1

1~

tAo AMBIENT TEMPERATURE lOCI
Maximum Oral" current Va. Caae Temperature

r\.
'1\

0

'\

5
0

.'\
\.

5

o

......

o. 6

V

20

~RF820.'

,"F82~ r-.....

2

J

16

t'- I'o!.

I
V061#:.2OV

5

12

i"-t-.,
l"'-

~ VG8~lL
I(

8

3.0

I

7 .

~3A

0 .. TOTAL GATE CHARGE InCl
Typical Gate Charge Va. Gat..To-Source Voltage

PULSE )8 MINIMAl)

8

,...A,'"

i\.
20

40

60

60

100

120

140

180

. TA. A_NT TEMPERATURE lOCI
Power Va. Temperature Derating Curve

292

N-CHANNEL
POWER MOSFETS

IRF830/831 1832/833
FEATURES
•
•
•
•
•
•
•
•
•

Low RDS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysllicon gate cell structure
Lower Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO-220

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

IRF830

500V

1.50

4.5A

IRF831

450V

1.50

4.5A

IRF832

500V

2.00

4.0A

IRF833

450V

2.00

4.0A

II

"-

MAXIMUM RATINGS
Characteristic

Unit

Symbol

IRF830

IRF831

IRF832

IRF833

Drain-Source Voltage (1 )

Voss

500

450

500

450

Vdc

Drain-Gate Voltage (RGs=1.0MO)(1)

VDGR

500

450

500

450

Vdc

Gate-Source' Voltage

VGS

±20

Vdc

Continuous Drain Current Tc=25°C

10

4.5

4.5

4.0

4.0

Adc

Continuous Drain Current Tc= 100 ° C

10

3.0

3.0

2.5

2.5

Adc

18

18

16

16

Adc

Drain Current-Pulsed (3)

10M

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

75
0.6

W/·C

TJ, Tstg

-55 to 150

°C

TL

300

·C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Watts

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width.. 300/As, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

",293

N-CHANNEL
POWER~MOSFSTS

IRF830/83118321833
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol ' Type

BVoss

Min Typ

VGs=0V

IRFB31
450
IRFB33

-

-

V

10=250,..A

4.0

V

Vos=VGS, 10=250,..A

100

.nA

VGs=20V

-

-100

nA

VGs=-20V

-

-

250

,..A

Vos=Max. Rating, VGS"'OY

-

-

1000

,..A

Vos=Max. RatingXO.B, Vas=OV, Tc=125°C

IRFlbo
4.5
IRFB31
IRFB32
4.0
IRFB33

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

Zero ·Gate Voltage
Drain' Current

loss

ALL

-

A

-

-

A

,IRFB30
IRFB31

-

0.95

1.5

0

IRFB32
IRFB33

-

1.4

2.0

0

ALL

2.5

3.2

-

U

Input Capacitance

Cis.

ALL

-

720

BOO

pF

Output Capacitance

Coss

ALL

200

pF

Crss

ALL

50

60

pF

Turn-On Delay Time

td(on)

ALL

30

ns

t,

ALL

-

110

Reverse Transfer Capacitance

30

ns

td(Off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qgs

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Fall Time

'

'.,.'j.

VGs=10V,10=2.5A

gfs

Turn.Off Delay Time

.

Vos>IO(on)XROS(on) max., VGs= 1 OV

Forward Transconductance (2)

Rise Time

.

,

V

Gate-Source Leakage Forward

ROS(on)

"

-

2.0

Static Drain-Source On-State
Resistance (2)

Test Conditions

-

ALL

10(on)

Max Units

IRFB30
500
IRFB32

VaS(th)

On-State Drain-Source
Current (2)

(Tc=25·C unless otherwise specified)

-

Vos>IO(on)XROS(on) ·max., 10=2:5A,

"

VGS=OV, Vos'=25V, f= 1.0MHz·
"'"

"

.'

55

Voo=0.5BVoss, 10=2.5A, ,2.0=500,
(MOSFET switching times are esSentially
ns, independent of operating temperature.).

30

ns

22

30

nC

4.2

-

nC

17.B

VGs=10V, 10=6.0A, Vos=O.B Max. Rating
(Gate charge is essentiallY'independent of
operating temperature.)

nC

THERMAL RESISTANCE
Junctioh-to-Case

RUlJC

ALL

Case-ta-Sink

RthCS

ALL

RthJA

ALL

I

'.

Junction-to-Ambient

-

-

1.67

1.0

-

K/W Mounting surface flat, smooth, and gr4i!8sed,

-

BO

K/W Free Air Operation

K/W

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse width"300,..s, Duty CycIEl.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

'I.'

,,,,\

~:

N-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Type

Continuous Source Current
(Body Diode)

Is

IRF830
IRF831
IRF832
IRF833

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Min Typ

IRF830
IRF831
IRF832
IRF833
IRF830
IRF831
IRF832
IRF833

Max Units

Test Conditions

-

-

4.5

A

-

-

4.0

A

-

18

A

-

16

A

-

1.6

V

Tc=25°C. Is=4.5A. VGs=OV

-

1.5

V

Tc=25°C. Is=4.0A. VGS=OV

-

~

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

-

Reverse Recovery Time
ALL
tIT
800
ns TJ=150°C. IF=4.5A. dIF/dt=100Al,..s
·Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth"300,..s. Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

W

rr
BPfiS ruse Test

f---

(jj

"'

~

!.

!.

t

5a:a:

eo,.s

~

3

Vos>Jo....IXRosc.,.I ....

3

Ti=--55°C
TJoc25°C:_
TJ ",125°C

III"':>

:>

<>.

<>

~

~

!

Q

R

/,
'I,

R

100
200
vos. DRAIN-TQ-SOURCE VOLTAGE (VOLTS)

300

Lt.1

o

1

v.. -,o~

..

J

,
I

~

3

4

5

6

Typical Transfer Characteristics'

,

10

j

VGS-S 6V

5

SO"sPulse TQSt

OPERATION IN lHlS
AREA IS LlMITED_

2

Vc;s-5V

~

BV ....

IRF830,1

-~5~~·

'7;

~',

5 -IRF830.1

,

_IRF832,3

2

VGS'"'4.SV

If

5=

--

Vos-4

To-25°C
Rt...::-l 61 KIW
SINGLE PULSE

Typical Saturation Characteristics

SAMSUNG SEMICONDUCTOR

10

0.1
1.0

2.0

I JlIIIIl

,"""

1,:#
I,I.!,I

,Oms

Ti",,150·C MAX

2
2
4
6
8
V... DRAIN-To-SOURCE VOLTAGE (VOLTS)

"

V

J

/
y

2

Vo•• GATE-TQ-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

=8

I

Test

.

15...

...z

Jse

IRF831.3

T

F830 .(.....

lOOm

1\"11

5.0
10 20
50
100 200
500
V... DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

295

N-CHANNEL

-"IRFI301,831 1832/833

POWER"NlOBFEtS'

I

2

I

a

-

0=0.

5

D~O.2
~,

0"0.1

11

,

1-- ....

;;'Ie.05

1

~

. . . 1::::;

2

NOTES

IIlJL
p~

0=0.02
5~,,"O.O1

stNGlE PULSE (TRANSIENT

p,~

r-

1--

THERMAL IMPEDANCE)

i

D"~ Faero. D~~

1

:1

.,

2 Per Umt Base=R,."c=1 6Z:Deg. CfW
3 TJ..-Tc·PDMZu...c (t)
,.'
,

I

-.

1

5

10-<

10,-.

_5

2

5

10-

2

5

I 111111'

10-,

I I 11111
10

11_ SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs_ Pulse .Ouration

r}=-S5 C

,

V

4

.... V

V

V

/ /
II/ 1/

T,~'25·6

I--

V I--"

/.

i
•

"

~

5

2
1.0

~

TJ -150°C
TJ ",,25 G C

5

j

2

o. 1
2
3
4
lb. DRAIN CURRENT (AMPERES)-

a

0.5

1

1.5.

2

25

Viii>. SOURCE·To-DRAIN VOLTAGE (VOLTS)

TYPical TranscOul'lductance Va. Drain Current

Typical Sourc_Oraln Diode Forward Voltage

1.2 5

2.5

I

I.,.,..-- ~
5

..,.. ~

~

i-"""

~S

~g

2.0

~_

5/

1.5

J

5

0.7 5
• 40

80
o~MPERATURE

120
(OC)

Breakdo!vn Voltage Vs. Temperature

c8SAMSUNG SEMICONDUCTOR

160

./

1.0

i

T ~ JUNCTION

~

U

..",. V

-:40

~

a

·0

lib

a

2

I

Vos>!DI.... XAosionl ....
80j.1S Pulse Test

T,-25'~

TJ -150°C;:

j

V

IV/

1

~- t::::;:

1/V

./

3

-

10'

-

,/

"

,/
/

0.5

,

.... V
Vas=1OV

1o-2.5A

.

N-CHANNEL

.IRF8.30/83118321833

POWER MOSFETS
5

2000

.L=o J .1
I-I MH,

CIss=-Cgs+Cgd, Cds SHORTED

1600

=:':J~
Cgs+Cgd
~+Cgd
Vos""100v

.\

Vos""isov.,
V~=4la

\

,aV

CIoa

/. V

\

400

\\

"

o

~

V'

1e-6A

/

~

10

~

40

V

00

8

16

24

-

-

rJ~AEoLLRJ

..........

"""1"-1' 'r

G

EFr=ecr OF 2.o,..s PULSE IS MINIMAl

(HEATING

3

r-...

"- ......

PUtf; Of 12
t- JrrIITtAL Ti""25 C

-

3

~~
V -1OV
~
Voa=2OV
~

f"""-. ..........
f"""-. .......... ['..

-

-

~

10

15

20

25

10. bRAIN CURRENT (AMPERES)

60

50

~

40

-

"""

j

"

30

00

75

100

125

100

Te. CASE TEMPERATURE (0e)

Maximum Drain Currant Va. Case Temperature

~

20
10

o

0
. 25

" '\

C

~
...0

,

I~

l\.

0

~

\~

1

Typical On-Rasiatance Va. Drain Currant

70

~

",

·0

80

~F830,1

IRF832.3

2

~~

I

" ,,,

I ' .....

GS

z

40

0". TOTAl. GATE CHARGE (nC)
Typical Gate Charge Va. Gat.To-Source Voltage

-

5!

32

V... DRAIN-TD-SOURCE VOlTAGE (VOLTSI

Typical Capacitance Va. Drain to Source Voltage

I\.
'\.

20

40

60

80

100

120

140

160

T,. CASE TEMPERATURE (0e)

Power Va. Temperature Derating Curve

.c8

SAMSUNG SEMICONDUCTOR

.297

N-CHANNEL

IRF840/841 1842/843

POWER MOSFETS

FEATURES
•
•
•
•
•
•
•
•
•

Low RoS(ofl) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low, input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO-220

PRODUCT SUMMARY
Part Number

Vos

IRF840

500V

.0.850

8.0A

IRF841

450V

0.850

8.0A

IRF842

500V

1.100

7.0A

450V

1.100

7.0A

._-

ROS(on)

10

-----

IRF843

MAXIMUM RATINGS
Characteristic

Symbol

IRF840

Drain-Source Voltage (1)

Voss

500

Drain-Gate Voltage (RGs= 1.0MO) (1)

VDGR

500

Gate-Source Voltage

VGS

Continuous Drain Current Tc=25°C
Continuous Drain CUrrent Tc=100°C

IRF841

,

IRF842

IRF843

Unit

450

500

. 450

450

500

450

7.0

7.0

Adc

4.0

4.0

Adc

28

28

Adc

±20

ID

8.0

8.0

Vdc
Vdc
Vdc

ID

5.0

5.0

Drain Current-Pulsed' (3)

IDM

32·

32

Gl!te Current-pulsed

IGM

±1.5

PD

125
1.0

Watts
W/"C'

TJ. Tstg

-55 to 150

°C.

TL

300

°C

Total Power Dissipation @ Tc=25°C
Derate above 25°C
. Operating and StDrage
Junction Temperature Range
Maximum Lead Temp. for Soidering
·Pufposes. 1/8" from case for 5 seqonds
Notes: (1) TJ=25°C tp 150°C

.

c8

(2) Pulse test: Pulse width300/ls, Duty Cycle2%
(3) Repetitive rating: Pulse width limited by mal<. junction temperature

SAMSUNG SEMICONDUCTOR

,

Adc

N-CHANNEL
POWER MOSFETS

IRF840184118421843
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Symbol

BVoss

TYj)e

(Tc=25°C unless otherwise specified)

Min Typ

Max Units

Test Conditions

IRF840
500
IRF842

-

-

V

VGs=OV

IRF841
450
IRF843

-

-

V

lo=250"A
Vos=VGs. 10=250"A

VGS(th)

ALL

2.0

-

4.0

V

IGSS

ALL

-

100

nA

VGs=20V

Gate-Source Leakage Reverse

IGSS

ALL

-

-

-100

nA

VGs=-20V

Zero Gate Voltage
Drain Current

loss

ALL

-

250

"A

Vos=Max. Rating. VGs=OV

Gate Threshold Voltage
Gate-Source Leakage Forward.

On-State Drain-Source
Current (2)

10(on)

~

IRF840
8.0
IRF841

-

IRF842
7.0
IRF843

1000 "A

-

A

-

-

A

Vos>IO(on)XROS(on)

IRF840
IRF841
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRF842
IRF843

-

0.6

0.85

0

-

1.0

1.1

0

Forward Transconductance (2)

6.5

-

Il

ALL

4.0

-

Input Capacitance

Ci..

ALL

Coss

ALL

Reverse Transfer CapaCitance

C,••

ALL

Turn-On Delay Time

id(on)

ALL

t,

ALL

td(off)

ALL

Rise Time
Turn-Off Delay Time
Fall Time

tt

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qgs

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

max .•

VGs=10V

I

VGs=10V.10=4.0A

gt.

Output Capacitance

Vos=Max. RatingXO.8. VGs=OV. Tc=125°C

-

1200 1600

Vos>IO(on)XROS(on)

max .•

lo=4.0A

pF

230

350

pF

65

150

pF

-

35

os

15

ns

90

ns

30

ns

34

60

nC

6.0
28

-

nC

-

1.0

K/W.

1.0

-

K/W Mounting surface flat. smooth. and greased

-

80

KIW

VGs=OV. Vos=25V. f= 1.0MHz

Voo=0.5BVoss. lo=4.0A. Zo=4.7 0
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V. lo=10A. Vos=0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature. See

nC

THERMAL RESISTANCE
Junctlon-to-Case

RthJC

ALL

Case-to-Slnk

RthCS

ALL

Junction-to-Amblent

RthJA

ALL

-

Free Air Operation

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse widthC;300,.s. Duty Cyclec;2%
(3) Repetitive rating: Pulse width limited by max. junction temperalure

c8

SAMSUNG SEMICONDUCTOR

299

. ',

N-CHANNEL

"

POW~RNlr>SF'E"S .

IRFa.O/841 18421843

SOURCE-DRAIN DIODE RATlNGS AND CHARACTERISTICS··
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Reverse Recovery Time

Type

Min Typ

Max Units

Test Condition·s

IRF840
IRF841

-

-

8.0

A

IRF842
IRF843

-

-

7.0

A

IRF840
IRF841

-

-

32

A

IRF842
IRF843

-

-

28

A

-

2.0

V

Tc=25°C, Is=8.0A, VGs=OV

-

1.9

V

Tc=25°C, Is=7.0A, VGs=OV

1100

-

ns TJ=150°C, IF=8.0A, dlF/dt=l OOA/~s

IRF840
IRF841

VSD

IRF842
IRF843
ALL

tIT

Q[]

Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width"300!-,s, Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junction .temperature
24

20

VGS-1~Vl if'-

IIr

VGS-1V

V.~8V

80jiS Pulse Test

6

I
II

80jJs Pulse Test

,V

20

VOS>~"'lXRos!on)"'"

6

VGS-6V'-

-

I

~

Vos-5V-

J

/I

TJ -12S 0

1//
1/1
c:;t/l

TJ=25"~':::--t

TJ=-S5"v!!
LQ

4

4
VGS=4Y- r---,-

10

20

40

60

'Pulse ~est

120

1

0

/.'rey

~

OPERATION IN THIS AREA:
ISUMITEO BY R~l

5

,

o

~1AF840.'

2 r-:-,'RF842,

5

\

VGS-45Y-

...

3l++H7L-,r-k++-H'-HtlI~~'-p'oI-I-++tttl

( or--I..,ll,l

.~ I'

'
"
"
V

7

5

102.~.

-

Yc;s=5V

J"

4

Typical Transfer Characteristics

~V

4

3

2

VQS, GATE-To-sDURCE VOLTAGE (VOLTS)

Vas =1:1

//

6

c8

100

·Typlcal Outpur Characteristics

8

2

60

vos, DRAIN-TD-SOURCE VOLTAGE (VOLTS)

eOj.£s

'~,

.<'r-,

t - - IRF842, 3

I

£

2

Vos-4V

o~
4

6

.

8

10

1.0

:~~:i

III \I
2

5

10

20

50

100

200

Uil
500

Vos, DRAIN-TO-SDURCE VOLTAGE (VOLTS)

Vo.. DRAIlHo-sDURCE· VOLTAGE (VOLTS)

Typical Saturation Characteristics

Maximum. Safe Operating Area

SAMSUNG SEMICONDUCTOR

N-CHANNEL
POWER MOSFETS.

IRF840/841 1842/843

i~~

1.0
I-n~n

~~

0.5

;:w

(J.~

~~
w Z

~a
~i

~nl

0 1

a:C

~ 1 005

~~

002

....

;;iiIII

~

NOTES

~

:.-"

0-0.

:Ii ....

J

-

O=-O 2

0.2

Irl....fL
~,-1

D-

bJj.-O

SINGLE PUlSE (mANSIENT

"~

THERMAL IMPEDANCE)

II IIII
II IIII-,

i--'

0.0 1
10

-.

1. Duty Factor. O....!!..
t,
2. Per Unit ease""R.r...c"'" 1 0
3 T.w-Tc=PpyZtr.x: (tl

I 1111111

5
10
2
5
10-,
2
5
10-,
\1. SQUARE WAVE PULSE DURATION (SECONDS)

101

I I

neg

C/W

I I r II
10

Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration

15
eo,.sPulaeTesI

I--

,

1

10

_ vos>lctGnlxRostIlll1_

,

I

2

I
i

3

V

/ V
-j /

",

TJ ""'-55 C

0

TJ-25~

5

T!=125.h

2

~

0

lV
V

-

I--

I

~

TJ -150°C

I I.

TJ -25°C '

-

5

4

6
12
16
ID, DRAIN CURRENT (AMPERES)

20

o. 1
o

1

4

5

VSD, SOURCE-To-DRAIN VOLTAGE (VOLTS)

Typical Transcounduclance Vs. Drain Currenl

.Typical Source-Drain Diode Forward Voltage

1.26

~g

Tr150°C _

".

2

9

6

TJ ""25°C

5

2. 5

1.15

0

..#"

./

V

,..,

i.,....-' ".
5

V

../ V

5

5

40

o

40
60
120
TJ. JUNCTION TEMPERATURE ("C)

Breakdown Voltage Vs. Temperalure

c8 SAMSU~G

SEMICONDUCTOR

./

0

~.

0:75

r
./

160

o

,,/

~

V

:

",/

V
40

Vm =10V

r

40
80
120
TJ, JUNCTION TEMPERATURE ("C)

160

Normallzad On-Raslstanca Vs. Temperature

~01

N-CHANNEL
POWER MOSFEtS

IRF840/841 1842/843
2000

5

J. J

~:,=~L.

CISS=Cgs+Cgd, Cds SHOAlED

"",.=Cgd

I

r

e!Cds+Cgd

r"-....

i

800

0

Cgs+Cgd

\

_

I

Coss=Cds+ CgsCgd

1600

"""

l\

U

\\

400

\

~::~=,

5

VDS""40OV

... ~

0

I

'"

......... r-

"-

a

~~
~

I
II

eos.

", .. tOA

C...

10,
VDS,

20

30

40

o

50

20

40
60
60
GATE CHARGE InC)

100

a.. TOTAL

DRAIN·TD-SOURCE VOLTAGE (VOLTS)

Typical Capacitance Vs. Drain to Source Voltage

Typical Gate Charge Va. Gat.To-Source Voltage

0

I
1&.1

4.0

- r--~ J.ASURE~ wrr~ CURRtNT

~

3.5

-

f--INITIAL TJ =25°d

!~EAnNd. EFF~CT OF'2 o,..s ~ULSE IS MINIMAl)

m. 3.0
~ 2.5

i

8

P~LSE 0i 2·0fAS DUAArION.

li·

6

1.

~

1. 0

""'" ...........N

4

~Vos-20V

.JI

5

/~

\~

2

".... ~

1

RFB40 1
.

we» ~

VM=10~~

2.0

~

-

......... r-....
r- -..... f.,.; .......... .........

~

05

~.

o

10

15 20 25
30
35
40
ID. DRAIN CURRENT (AMPERES)

45.

50

Typical On·Reslstance Vs. Drain Current

0

50

75
100
125
TA. AMBIENT TEMPERATURE ("C)

Maximum Drain Current Va. Case

150

.
Tem~erature

160
140

Iii 120

i

r--,

"

I.
iii
~
Q.

100

"'

'\..
."'\

60

,

r'\.

40

r'\.

i

""-

0

20

40

60

80

100

120

TA. AMBIENT TEMPERATURE ("C)

""
140

160

_c8......_-------------------------,.,
Power Vs. TemperaJure Derating Curve

SAMSUNG SEMICONDUCTOR

302.

.

N-CHANNEL
POWER MOSFETS

SSM3N70
FEATURES
•
•
•
•
•
•
•
•
•

Low RDS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capatitanqe
Extended safe operating area
Improved high temperature reliability
1"0-3 package (High voltage)

TO-3

PRODUCT SUMMARY
Part Number
SSM3N70

MAXIMUM RATINGS
Characteristic

SymJJoI

SSM3N70

Unit

Drain-Source Voltage (1 )

Voss

700

.Vdc

Drain-Gate Voltage (RGs=1.0MO){1)

VOGR

700

Gate-Source Voltage

VGS

--------

-_.,

---

±20

Vdc
Vdc

--."~.

Continuous Drain Current Tc=25°C

10

Continuous Drain Current Tc = 100 ° C

10

Drain Current-Pulsed (3)

10M

3

Adc

2

Adc

"-"._-"

--_.-

12
--~----

Gate Current-Pulsed
Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

-

Adc

IGM

±1.5

Adc

Po

75
0.6

W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Watts

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width";300"s, Duty Cycle";2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

303

N-CHANNEL
POWER. MOSFETS

SSM3N70'

..

ELECTRICAL CHARACTERISTICS
Characteristic

1

('ii.,,·'·
"':-'

.I ,,',

~ymbol

Type

(Tc=25°C unless otherwise

Min

Drain-S.ource Breakdown
Voltage

BVoss

ALL

700

Gate Threshold voltlige

Typ

Max

Units

4.5

V

Vos=Vas, 10=250,..A

100

nA

Vas=20V

nA

Vas=-20V

3.0

Static Drain-Source On-State
ROS(on)
Resistance (2)

ALL

-

4.8

5;0

Forward Transconductan96 (2)

gt.

ALL

1.5

2.5

~

(]

Input CapaCitance

CiSS

ALL

-

730

900

pF

ALL

2.0

IGIlS

ALL,

Gate-50urce Leakage Reverse

lass

ALL

-

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current(2)

10(onf

ALL

Output Capacitance

Coss

ALL

Reverse Transfer CapaCitance

CIS.

ALL

Turn-On Delay Time

id(on)

ALL

It

ALL

id(oll)

ALL

tt

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

09

ALL

Gate-Source Charge

Og.

ALL

Gate-Drain ("Miller") Charge

Ogd

ALL

Rise Time
Turn-Off Delay Time\
Fall Time

-

Condi~ions

V

-

ALL

Vas(lh)

Test
Vas=OV
10=250,..A

-

Gate-Source Leakage' Forward

sp~cified)

-100

-

A

Vos>lo(on)XRos(on) max., Vas= lOV

0

Vas=10V,10"'1.5A
Vos>IO(on)XROS(on) max., 10= 1 .5A

250
1000

p.A Vos=Max. Rating, Vas=OV
p.A Vos=Max. RatingXO.S, Vas=OV, Tc=125°C

1

70

75

pF Vas=OV, Vos .. 25V, f=1.0MHz

20

25

pF

-

40

ns

95

ns

150 '

ns

60

ns

25

nC

-

10

-

15

Voo=0.5BVoss, 10=1.5A, Zo=15 0
(MOSFET switc~illg times are essentially
independent of operating temperature.)

Vas=10V, 10=4.0A, Vos=O.S Max.
Rating (Gate charge is· essentially independenti
nC
of,Operating temperature.)
,
nC

I

THERMAL RESISTANCE
Junction-to-Case

RlhJc

ALL

Case-to-Sink

Rlhcs

ALL

Junction-to-Ambient

RthJA

ALL

-

SOURCE-DRAIN DIODE RATINGS
Continuous Source Current
(Body Diode)

Is

1.67

-

-

30.0

K/W

KlW Mounting surface flat, smooth, and greased
KlW. Free Air Operation

AND CHARACTERISTICS

. ALL

-

-

3.0

-

-

12.0

-

1.5

V

Tc=25°C, Is:"'3.0A, VGS=OV

-

ns

TJ=150°C, .I~=3.dA,ldIF/dt~1 OOAl,..s

Pulse Source Current
(Body Diode) (3)

ISM

ALL

Diode Forward Voltage (2)

Vso

ALL

trr

ALL

Reverse 'Recovery Time

0.1

500

A

.~

Modified MOSFET symbol" '.
: showing the integral
a
A rev~eP-N JURe,tion re~tifier. '

Notes; (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width~300j.lS, Duty Cycle~2%
(3) Repetitive rating: Pulse' width limited by max. junetion temperature

=8SAMSUNG SEMICONDUcToR

.

s

N-CHANNEL
POWER MOSFETS

SSM3N70
7, 5

/11

..
IE

1L

4

~

...Z

w

II:
II:

Vos>lot",,)X~on) ....

0

iiS
w

II:
W

r

8OJ4S Pulse Test

5

5
V =S5V

3

~

:>

"

0

~

..e

'/h

II:

1

"

"";.5V

0

50

100

150

200

250

300

5

TJ ""125"

TJ=25.C~~
TJ=-55°C

o

1

V... DRAIN-To-5OURCE VOLTAGE (VOLTS}

3

I~

V.
V

J~

2

"

Ves -1OV

5
OPERATION IN THIS AREA

Ves=7V

VGS"y-

IS UMITED BY

2

_~';7t
0

VGS=J.SV

10,..

/

,

0

IJ I

llu

1m,

Tc -25"C
TJ's-150"C MAX

At.JC""l 67 KJW

2

VGS.lv
20

30

40

V... DRAIN-T0-50URCE VOLTAGE (VOLTS}

, Typical Saturation Characteristics

50

0, 1

/
/

5

'iiGlEii
III I
10

20

il'fl'

1,\

SSM'i'I50

100

200

00m0

ciciT
500

V... DRAIN-T0-50URCE VOLTAGE (VOLTS},

Maximum Safe Operating Area

0=0.5

5

o~oi

-

2

olo"

.....

~

.... t:::;~

NOTES

IfLJL

"",r-:Id

o:ToI.

1

0""002

5 0=001

SINGLE PUlSE (TRANSIENT
THERMAL IMPEDANCE)

~i~
•

~i""'"

1 Ouly Factor O......!!..

2. Per UnH 8ase-R IhJC -1.67 Deg elW
3 T...,.-Tc=PDMz...x: (tl.

2
0,0 1

--

--

rSSM3N70

VOS-4'.5V

10

Roston)

5

VGS-SV

J

V
o

5

102

2

"

L

4

Typical Transfe' Characteristics

~ E±:

~~

m

3

rJ

Vas. GATE-Ta-SOURCE VOLTAGE (VOLTS}

Typical Output Characteristics

ao,.!"""'~"1

2

'1/

-.

,10

5

-.

10

2

10-3
5
2
5
10-,
2
5
1 011. SQUARE WAVE PULSE DURATION (SECONDS}

I IJlUl , I I I I I II
5

2

1

2

5

10

,

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

c8SAMSUNG SEMICONDUCTOR

305

N-CHANNEL .
POWER MOSFETS

'SSM3N70
,

. 10

10

80,..s Pulse Test

f

8

I

6

..!

!~

TJ =150°C

T 25°0

VDS;>I~(W1IX~onl""'.

li

,

W

TJ ""-55"'C

U

iiiz

§

~
J~ V
/

.~

V ......
j..--"'

T,=25·d0

I---

,

~

t

I

2
TJ-125°C-

'rt '50'C

IJ

__ TJ -25°C

o. 1
3

.

4

5

6

7

8

1

10

I•• DRAIN CURRENT (AMPERES)

2

3

VSD. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

. Typical Transcounductance VS. Drain Current

Typical Source-Drain Diode Forward Voltage

1.25

2.5

'"

~g

1.15

i

~6
a:~

1.05

~=a:
a:

~

V

i--"'" ~

"':I
2~ 0.95

0

[....-' I--'

V

"

. /V

V

V
.,-V
j..--"'

i

"

~

V

0.85
Vos-1OV

l

1o-1.5A

0.75
-40

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

180

1.500

o

-40

Breakdo,vn Voltage Vs. Temperature

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

180

NormallZlid On-Reslslance Vs. Temperature

5

v~_lo
1-1 MHz

~:~:'+'i"'"

1.200

cor SHORTED

0

Cosa""Cda+ CgaCgd

.Cgs+Cgd

i

r

=Cds+Cgd

'\

5

o \

u

VDS~140V

Vos""350V
Vos=560V

"""

300

W

~

\'
o

5

......

Cosa

em

10
20
30
40
Vos. DRAiN-TCl-SOURCE VOLTAGE (VOLTS)

50

Typical CapacltanclI VI. Drain to Source Voltage

c8

~
V
~

0

600

~~

SAMSUNG SEMICONDUCTOR

I
V

~-4A

8

16

24

a.. TOTAL GATE CHARGE (nC)

32

40

Typical Gate Charga VI. Gat..To-Source Voltage

N-CHANNEL

SSM3N70
13

POWER MOSFETS

'Roa:~1
ME~URED 'WITH dURAE~ pude
2.o,.ts DURATION. INITIAl.. T -25°C. (HEATING

/

OF

J

EFFECT OF

2.~

1J

1

PULSE IS MINIMAL)

VGS 10V

1

Vi

-

~ VvOS-20V
~ II'
7

~

r

:--

AV

- "

1

~

j
30

1.5

--- ---

3
4.5
6
I", DRAIN CURRENT (AMPERES)

7.5

Typical On-Reslstance Vs. Drain Current

r--..,SSM3N70

........

r-......

I'.

\

0 25

50

7~
100
125
AMBIENT TEMPERATURE (OC)

150

Maximum Drain Current Va. Case Temperalure

80
~
70

~

60

z

50

'"\.

"-

'\~

'\

1

.~

40

a:

30

.;

20

~

....

o

"

\.

0

20

40
60
60
100
120
. Te. CASE TEMPERATURE (OC)

i\.

140

160

Power Vs. Temperalure Oerallng Curve

c8

SAMSUNG SEMICONDUCTOR.

307

N-CHANNEL
POWER 'MOSFETS

SSM4N55/4N60
FEATURES
•
•
•
•
•
•
•
•

Low ROS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage 'stabllity
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
• TO-3 package (High voltage)

T0-3

PRODUCT SUMMARY
Part Number

Vos

ROS(on)

10

SSM4N55

550V

3.00

4A

SSM4N60

600V

3.00

4A

.~.

MAXIMUM RATINGS
. SSM4N55

SSM4N60

Unit

Voss

550

600

Vdc

Drain-Gate Voltage (RGs=1.0MO)(1)

VOOR

550

600

Vdc

Gate-Source Voltage

VGS

'Characterlstlc

Symbol

Drain-Source Voltage (1)

Continuous Drain Current Tc=25·C

±20

Vdc

10

4

4

Adc

Continuous Drain Current Tc= 100· C

·'0

2.5

2.5

Adc

Drain Current-Pulsed (3)

10M

16

16

Adc

Gate Current-Pulsed

IGM

, Total Power Dissipation

@ Tc=25·C

75
0.6.

berate above 25· C
Operating and Storage
Junction Temperature

~dc

±1.5

Po

Watts

W/·C

..
R~nge

TJ, Tst9

-55 to 150

·C

TL

300

··C

Maximum Lead Temp. for Soldering
Purposes, 1/8" fr.om case for 5 seconds

Notes: (1) TJ=25°C to H;O°C
(2) Pulse 'test: Pulse width';; 300,..5 , Duty Cycle';;2%
. (3) Repeiitive rating: Pulse width limited by max. junction temperature'

c8 ~AMSUNG SEMICONDUcr~R

,

"

i

N-CHANNEL
POWER MOSFETS

SSM4N55/4N60
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

(Tc=25°C unless otherwise specified)

Min Typ

Drain-Source Breakdown
Voltage

BVoss

SSM4N55 550
SSM4N60 600

Gate Threshold Voltage

VGS(th)

ALL

2.0

IGSS

ALL

-

ALL

4.0

-

Static Drain-Source On-State
ROS(on)
Resistance (2)

ALL

-

2.0

Gate-Source Leakage Forward
Gate-Source Leakage Reverse

ALL

IGSS

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current (2)

10(on)

ALL

Test Conditions

MIx

Units

-

V
V

VGs=OV
10= 250"A

4.5

V

Vos=VGs. 10=250"A

100

nA

-100
250

VGs=20V

nA VGs=-20V
"A Vos=Max. Rating. VGs=OV

1000

JAA

Vos=Max. RatingxO.8. VGS';"OV. Tc=125°C

-

A

Vos>IO(on)XROS(on) max .• VGs=10V

3.0

0

VGs=10V. hi=2.0A
VOS>lo(on) x ROS(on) max .• 10=2.0A

Forward Transconductance (2)

gfs .

ALL

2.0

3.1

-

0

Input Capacitance

Ciss

ALL

720

900

pF

Output CapaCitance

110

200

pF VGs=OV. Vos=25V. f=1.0MHz

40

60

pF

-

40

ns

95

ns IVoo=0.5BVoss. 10=2.0A.IZo= 150
(MOSFET switching times are essentially
ns independent of operating temperature.)

COS&

ALL

Reverse Transfer CapaCitance

C,..

ALL

Turn-On Delay Time

td(On)

ALL

t,

ALL

Id(off)

ALL

tf

ALL

-

Qg

ALL

-'

Gate-Source Charge

Qgo

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source PiuS' Gate-Drain)

-

150
60

ns

25

nC

10
15

VGs=10V. 10=5.0A. Vos=0.8 Max.
Rating (Gate charge is essentially independenl
nC
of operating temperature.)
nC

THERMAL RESISTANCE
RlhJc

ALL

-

-

Case-to-Sink

Rthcs'

ALL

-

0.1

Junction-to-Ambient

RthJA

ALL

-

-

Junction-to-Case

I
I

1.67

-

KIW
K/W Mounting surface flat. smooth. and greased

KlW Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
Reverse Recovery Time

Symbol

Type

Is

ALL

ISM

ALL

Vso

ALL

Irr

ALL

Min

-

Typ

Max

Units

. 30

4.0'

A

16.0

A

Mod.... MOSFET " " " "
showing Ihe i,llegral
reverse P-N junction reclifier

1.5

V

Tc=25°C. Is=4.0A. VGs=OV

-

ns

TJ=150°C. IF=4.0A. dIF/dt=100A/"s

600

Test Conditions

~
G

. S

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widtM300jAS. Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction lemperature

c8

SAMSUNG SEMICONDUCTOR

309

N-CHANNEL
PQWER MO$FETS

SSM4N55/4N60
a.o

1/,
'fI

TJ1,25Qc'

i

a.o

=~;:;~:l

,
4

TJ~25OCf'

TJ =-5soQ

Z

6.4

z

2

~ 3.2H~=+==1:=+=::j:=j:::::j:=~~~~¢=1

Tr12S"C

6

80~ PldJ Teat

300

1
2
3
6
VGS. GATE-To-SOURCE VOLTAGE (VOLTS)

i

I
u

,

VGS ,",10V

Va.s=7V-

10

;VI '

vGS....,e'sv-

~ ..-

5
OPERATION IN THIS AREA IS LIMITED

2o

~~

46

Z

til

1. 6

.

W'"

Si-SSM4N60

~

II

100,..

" " IIUi!

VGS:III55V

0

Y

~ t=~ ~~~~~L~~~;~c:~~:

MAX

1
II

VGS 5V

I--

10

20

30

40

1

50

5

Vos. DRAIN-T0-50URCE VOLT AGE (VOLT5)

10ms

J.JJllll

1111111

VGS'""45V

oII!::

I, "-

VGS=6V

1£ V

3. 2

BY'R~nl'

1'-

,4V

~

.s

Typical Transfer Cha,racterlstics

JV

6.4

55"C

~ ~l,'.
~
4
5

Typical Output Characteristics

ao

M
rtf

r)=25°C

T,=

.9

50
100
150
200
250
VOS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

,

a

!i
II! 4.al-.Jj.-+--+-+--i--i-+-i-+'::::"'r'-+-I
!!!u

'I,

!

10

rtJi

SSM4N60
SSM4N55

20

50

100

200

500

VOs. DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

. Maximum Safe Operating Area

2
0

5

0-0.5

..... ~~

0-0.2

2

olD.l .

~

..... 1-'1"'" .1411

1~o15

::n

l'l· L

.~~~'~

SINGLE PULSE (TRANSIENT

0=0.02

5

filii

THERMAL IMPEDANCE)

.

0-0.01

I""

1. Duty

Factor. o=..!!..·
J't,.

2

2. Per Unit ~RIIIJC-1.67 Oag. C/W.
3. T.....-Te-PoMZu.JC (t) .

1
5

10"'

2

5

-,

10

2

5

,

10"

2

5

10-,

11. SQUARE WAVE PULSE DURATION (SECONDS)

1IIIIIIl . 11

:
2

1
'.:. •

10
:

Maximum Effective Transient Thermal Impedance Junction- Io-Ca~e Vs. Pulse 0l:'rallon.

c8

SAMSUNG SEMICONDUCTOR

I. I III

N-CHANNEL
POWER MOSFETS

SSM4N5514N60
7,5

6,0

f

!!

!
i!!z

...-I-""
.,..,.~
...- l..."
1/

4,5

--

~

-

10_1/
•

Ii /

Vos>IDlOIIIXAD$OI1I .....

y~s

If

pur

~-

Test]

f

2

4
6
8
ID. DRAIN CURRENT (AMPERES)

°b~-W~~~~~~~~--~4--~-+--~~

10

VOD. SOURCE·TO·DRAIN VOLTAGE (VOLTS)

Typical Transconductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

1.25

2, 5

..........
L'
5

•

I~ V

c

1,5

TJ'·-~5GC

/ V . /V

3,0

i

I!'
~

TJ"'~
TJ=25°C

./

V

k-"

....

....

0

/

.......V

..........

..........

........-

/'

V

./

./

V

0,75
-40

o

40

80

120

VGS -l0V
lo=2A

o

160

o

120
40
80
TJ. JUNCTION TEMPERATURE ('e)

40

TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

25

2,000

V~LD

~

f=1 MHz

1,600

0

CISS"'Cgs+Cgd, Cds SHORTED

C"""Cod

I

w

..'"
~

::::Cds+Cgd

\

0

>

"
"0
~

:b
~
~

\

o

V~-300~'::::;
V[)S=480V

II:

\
Cias

\

Voo "'120V

15

w

\
400

20

~

I

Coss=Cds+ CgsCgd
Cgs+Cgd

"'

.......

Cess

c""

10
20
30
40
Vos. DRAIN-TOoSOURCE VOLTAGE (VOLTS)

50

Typical CaPacitance Vs. Drain to Source Voltage

c8

160'

Normalized On-Resistance Vs. Temperature

SAMSUNG SEMICONDUCTOR

~/

~V
~ '/

10

// V

10 5A

J

V
o

8

16
24
32
a g• TOTAL GATE CHARGE (nC)

40

Typical Gate Charge Vs. Gate-To-Source Voltage

-311

N-CHANNEL
POWER MOSFET.$

Roston)

MEASURED WITH

CURRENT PULSE OF
2 0,. DURA TlON

4

,~~~~~~~~ dF 20,..s
PULSE IS MINIMAL)

6

-

..

4

V~1

-)

......... to-.

f'

S$M4N60

2

~ .....V

~ I-- Pv~Vt--2

J

o

4

6

10

8

I-70

'"

r\.

'\

50

~

40

a:

30

'\

I"

0

1'\
I'\.

0

o

20

40

60

eo

'" I\.

100

120

140

Te. CASE TEMPERATURE (OC)

Power Ve. Temperature Derating Curve

c8

50

75

100

125

,
150

Maximum Drain Current Vs. Case Temperature

,:'-

0

0
25

Te. CASE TEMPERATURE (OC)

80

~

\

.1
Typical On-Reslstance Vs. Drain Current

I

""

1

I•• DRAIN CURRENT (AMPERES)

~

.

f""'-.. ........

3

. . .V

t·

~ .~

SAMSUNG SEMICONDUCTOR

160

N-CHANNEL
MOSFETS

POW~R

SSM4N70
FEATURES
•
•
•
•
•
•
•
•
•

Low ROS(on) at high voltage
Improved inductive ruggedness
Exce"ent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure.
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High voltage)

TO-3

PRODUCT SUMMARY
Part Number

Vos

SSM4N70

700V

I
I

"Os(o"l

2.50

I
I

ID
4.0A

I
MAXIMUM RATINGS
Symbol

SSM4N70

Unit

Drain-Source Voltage ..! 1 )

Voss

700

Vdc

Drain-Gate Voltage (RGs= 1 .OMO) (1)

VOGR

700

Vdc

Gate-Source Voltage

VGS

±20

Vdc

10

4.0

Adc

10

2.5

Adc

10M

16

Adc

±1.5

Adc

125
1.0

W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Characteristic

Continuous Drain Current Tc=25°C
Continuous Drain Current Tc = 1 00 ° C
Drain Current-Pulsed (3)
Gate Current-Pulsed

. IGM

Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

I

Po

Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Watts

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widthIO(on)XROS(on) max., VGS= 1 OV

.0

VGs= 1 OV, io=2.0A
Vos>IO(on)XRoS(on) max., 10=2.0A

grs

ALL

2.5

3.6

-

0

CiSS

ALL

-

-

1800

pF

1120

200

70

75

pF

-

60

ns

150

ns

Output Capacitance

C088

ALL

Cras

ALL

Turn-On Delay Time

td(on)

ALL

t,-

ALL

td(off)

ALL

tr

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qgs

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Rise Time
Turn-Off Delay Time
Fall Time

VGs=20V

",A Vos=Max. Rating, VGs=OV

Input Capacitance

Reverse Transfer Capacitance

Test Conditions
VGs=OV
10= 250",A

-

.ALL

Units

-

pF VGs=OV, Vos=,25V, f=1.0MHz

300

'Voo=0.5BVoss, 10=2.0A, Zo=4.70
(MOSFET switching times are essentially
ns independent of operating temperature.)

130

ns

40

nC

15

nC

25

nC

KIW
KIW
KIW

VGs= 10V, 10=5.0A, Vos=0.8 Max.
Rating (Gate charge is essentially independent
of operating temperature. )

THERMAL RESISTANCE
Junctlon-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.0

0.1

-

-

30.0

Mounting surface flat, smooth, and greased
Free Air Operation

SOURCE-DRAIN DIODE RATINGS, AND' CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)

Symbol

Type

Min

Typ

Mall

Units

Is

ALL

-

-

4.0

A

Pulse Source Current
(Body Diode) (3)

ISM

ALL

Diode Forward Voltage (2)

Vso

ALL

trr

ALL

Reverse Recovery Time

-

,600

16.0

A

Test Conditions

MOdftod MOSFETo~_

showing the Integral
reverse P-N junction rectifier

I

~

G

,S

1.5

V

Tc=25°C, Is=4.0A, VGs=OV

-

ns

TJ=150°C, IF""4.0A, d1F/dt=100Al/olS

I

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300",s, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

314

N-CHANNEL
POWER MOSFETS

SSM4N70
20

12
~

~GS"7V

..'"

I
1

16

iii
w

Vas=55V

'"~

8

:I

~

....Z

I

'"'"t!

VGS -5V

4

~

8

r- rm

TJ=125OC~
TJ:25°C

55 '

4

1 -

Vos=4V

50
100
150
20!l.
,250
VDS. DRAIN·TQ.SOURCE VOLTAGE (VOLTS)

eO,.s Pulse Tesl

~

8

1~ V

-

1

5

!--VGS;'"6V

./

2

,

4

5

6

OPERATJON IN THIS AREA IS UMITED BY Rq..;..~

Vas=55V

i

2~~ff

'.-

II08-45V

~.

!i

I

II,~
,

,,
1.0

'ms

III,

Tc- 25 ° O

Oms

TJ ,",15DoC '~AX

RIIIJC 1.0 KJW

SINGLE j'JL]'E

III

/

III

VGS-4V

O. 1

40

II

1':

'SSM4N70

~

8
16
24
32
Vos. DRAIN·TQ.SOURCE VOLTAGE (VOLTS)

~~

t7

a

I

vos""SV

~.

j
~

3

10

~VGS=7V
~ ~VGS=10V

)
4

2

Typical Transfer Characteristics

~

6

C

VOs. GATE·TQ.SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

a

J

.$

a

300

,
I

~
!i

y",145y -

~

If
12

tzw

W

'"'":::>

"Cz
'"c~

T••t

Voo>lotar'llXRas.ml .....

iii
w
w
:Ii
~

.,..t..

I - - f-- •

1

10 ~ J-VGS~l'OV

1.0

2

'0Om.

II

SSM4N70

I'm

5
10 20
50· 100' 200
500
VDS. DRAIN·TQ.SOURCE VOLTAGE (VOLTS)

Maximum Ssfe Operating Area

Typical Saturation Characteristics

2

a
5 -no

~:iiiii

~o.

2

I-D~O'
.1

NOTES

IILJL

-

0- .

5

SINGLE PULSE (TRANSIENT

THERMAl. IMPEDANCEJ

2
0.0 1
10.,

10.,

.,

5
10.
2
5
10.,
2
5
10.,
11. SQUARE WAVE PULSE DURATION (SECONDS)

~i~

,

Duty Factor D=..!!..

2
3

Per Umt sase-Ru...c=l 0 Ceg C/W.
TJM""Tc=POMz....c (t)

t,

I I IIIIII

II

I I I II
10

Maximum Effective Transient Thermal Impedance Junction' to-Case Vs. Pulse Duration

c8

SAM5UNG

SEMICO~DUCTOR

315

N-CHANNEL

SSM4N70
16.0
--'-

POWER MOSFEtS

Vos>IIlIonlXAos.

.

10'

~I~.LJ

TJ"2S';-C

ur

,

W
II:

....

~

,~ 12.8

:Ii
~

I

I-

z

r

II:

0

V

iI5

e

TJ -=25"C

II:

0

// V'

W

co

.TJ =12IsoC

II:
W

1.0

>

JV

~.

3.2

W
II:

j

III

r-

4

25

8
12
16
ID. DRAIN CURRENT (AMPERES)

20

.a

.1
:a.
4
5
VSD. SOURCE.-TO·DRAIN VOLTAGE (VOLTS)

Q

Typical Source-Drain Diode FCH'Ward Voltage

1

.

--

~
g
;

1.15

g

/

~51 05
w~

i ...
we

O:li

8~ 0.95 ,,/

V

V ...

,;.. ~.

/

... V

./V

./

./

.1/

"I-

I
o

TJ""'ro C

0.1

Typical Transc;ounductance Vs. Drain Current

1.

TJ "'}50:f

f----

I(

\!!

TJ.JS00C

10

,.II!

Tr -5S"C

4

.g

~f-...

........

V

V

./

Voo=10V

1o-2A

0.85

o

0.7 5
-40,

0
40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

-40

Breakdown Voltage Vs. Temperature

R~ M~ASURJO WIT~

\

i",1200
0

ci

400

I'

1

-

~

~
I

"~

co,

~.

'.
15

w

V~=140V

-

,.ii!
0
~

\~

20

w

\

"'0

t60

oJ,

..
cURRkNT pJLSE
2 o~ OURATION INITIAl TJ =25°C (HEATINGEFfECT OF 2.~ PUlSE IS MINIMALl

I~

40
80
'120
T... JUNCTIQN TEMPERATURE (OC)

25

2000

1600

0

Normalized .On-Reslsta,nce Vs•.. Temperature

~V",=35DV ....
•

Vos""'560V,,)

10

.~

~
~

. . . r---.. rr--

'U

1

Coos

50

Typical Capacitance Va. Drain to Source Voltage

c8~AMSUNG SEMICONDUCTOR

ID=6A

/

/-

Crs,

10
.
20
40
V... DRAIN-TD-SOURCE VOLTAGE (VOLTS).

Jl
W

o

20

40

60

0.. TOTAL GATE CHARGE InC)

80

100

Typical Gate Charge Vs. Gate-To-Source Voltage

N-CHANNEL
POWER MOSFETS

SSM4N70
, 5,0

f

:z:

..e

Rose...) MEASURED WITH CURRENT PULSE OF
4,4

~

2 ~ DURATION INITIAL TJ=2SQC (HEATING

t--

FFEC OF 2

-

pus PULSE IS MINIMAr

...
!II

t--

:a
II:

z

0

0

I J
"

VGS=20V

26

""" t"'-

I'-

Z

II:

~
:!i

IL

SSM4N70

......

1'...

!!iu

32

/ ' V"

t'-...

IE
~

~~
~.,

..

U
II:
::0

II:

vm=l"" - ~

3,8

-....

......
.....

iii

C

~
~

R

~

,

\

2,0

0

o

8

12

16

20

10. DRAIN CURRENT (AMPERES)

25

50

75

100

125

150

Tc. CASE TEMPERATURE (OC)
Maximum Drain Currant Vs. Case Tamperature

Typical On-Rasistance Vs. Drain Current

160

140

~

120

!

..~

" ~,

~

100

""

80

II:

60

i

40

20

o

•

r-- b.

C

20

40

r--...
~

"-~

"-

60
80
100
120
T,. CASE TEMPERATURE (OC)

"'r'\.
140

160

Power Vs. Temperature Derating Cur.e

,'ciS

SAMSUNG SEMICONDUCTOR

317

N-CHANNEL
POWER MOSFETS'

SSM6N5516N60
FEATURES
•
•
•
•
•
•
•
•

Low ROS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
• TO-3 package (High voltage)

TO·3

PRODUCT SUMMARY

l

Part' Number

Vos

ROS(on)

10

I

SSM6N55

5501/

1.80

6.0A

J

"'''''V'O'~OU

l.tH'

tLUA

1---=:-:-:-:.--::---I - ouuv
~~:-:---I--~-=~-I
I

I

I
MAXIMUM RATINGS
Characteristic

I

Symbol

SSM6N55

SSM6N60

Unit

Voss

550

600

Vdc

VOGR

550

600

Vdc

Drain-Source Voltage (1)

~...,.",.. V..... 'RM-'.OMO"')
Gate-Source Voltage

±20

VGs'

Continuous Drain Current Tc=25°C
Continuous Drain Current Tc= 1 00 ° C

Vdc

6.0

6.0

Adc

10

:4.0

4.0

Adc

10M

24

10

--~--

Drain Current-Pulsed (3)
f-----

.,

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

125
1.0

Watts

-55 to 150

°C

---

1-J

Adc

IGM

Operating and Storage
Junction Temperature Range

I

24

Gate Current-Pulsed

TJ, Tstf)

--

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

W/~C

'.

TL

300·

at

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;;300/Js, .Duty Cycle';;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8 ~AMSUNG

$EMIPONDUcrOR

318

N-CHANNEL
POWER MOSFETS

SSM6N55/6N60
ELECTRICAL CHARACTERISTICS (Tc~25°C
Characteristic

Symbol

Drain-Source Breakdown
Voltage
---_._-_ .._..._--

Gate Threshold Voltage

- -

._---

Gate-Source Leakage Forward
-_._. -

-

1---

ALL

VGSlth)
IGSS

ALL
--~

-

._.-

Gate-Source Leakage Reverse IGSS
ALL
. _. --_._--- --- -

r------------- .
Zero Gate Voltage
Drain Current

ALL

loss

r - - - - - - - - - . - - - ----- ----_ ..

iOn-State Drain-Source

----

Static Drain'-Source On-State
ROSlon)
Resistance (2)

-- -----

Forward Transconductance (2)

Rise Time

ALL

--

Turn-Off Delay Time

--_._-

.Fall Time

-------Total Gate Charge
(Gate-Source Plus Gate-Drain)

-,-

Gate-Source Charge

.-

Gate-Drain ("Miller") Charge

6.0

-

-

-- ---

-

VGs=20V

-""---------------~~------

-- -_ ..

250
.. _--

__._--_-.:_._------------

nA VGs=20V
_.. _---

------_._--_.

-

_._----------

Vos=Max. Rating=0.85 VGs=OV
"A
-_.------------~

1000 . "A Vos=Max. RatingXO.8, VGs=OV, Tc= 125°C
--_.. _- --.,---A

-

. --_.

Vos>IOlon) X ROSlon)

max.,

VGS= 1OV

--_ .. --------------------

-

0 VGs=10V 10=3.0A
1.15 1.8
c---- ----- 1---3.0 4.8
Il Vos>IOlon) X ROSlon)

-- --

--

-

ALL

-

tdlOff)

ALL

-

tf

ALL

'Qg

ALL

-

- - - - - -_.

~--

ALL
~-

Qgd

- --

------- - - r-------

t,

Qgs
e----=--_

nA

- -

- ------ --_._- --------

-100

ALL

tdlonl_

Vos=VGS, 10=250"A

-

----- 1----- 1 - - ---Output Capacitance
ALL
Coss
Reverse Transfer Capacitance C,ss
ALL
-1 - - - -- "Turn-On Delay Time

V

--_._-

-

-

ALL

gfs

C ,SS

..

100

~----

Input Capacitance

4.5

-- -- --

-

---

ALL
- ----

VGs=OV
10=250"A.

---- - - - - - ---- --_.

-

-

V
V

--

---

Test Conditions

-

_.----

ALL

1010n)

---.------------ -

-

Units

-

--

--- - - - -

-----

-

Max

--

2.0

.,---_.-

------- -

Typ

Min

SSM6N55 550
SSM6N55 600

BVoss

_.

Type

unless otherwise specified)

ALL

-

. -1---

max,

to=3,OA

1100 1800

pF

170

350

pF VGs=OV, Vos=25V, f=1.0MHz

60

150

pF

- - f----.

-

60

ns

150

ns

200

ns

120

ns

-

40

nC

-

15
25

II

Voo=0,5BVoss, 10=3.0A, Zo=4,7 0
(MOSFET switching times are esseotially
independent of operating temperature,)

VGs=10V, 10=7.5A, Vos=0,8 Max"
Rating (Gate charge is essentially independent
- - of operating tem'perature,,)
nC
nC

THERMAL RESISTANCE
Junction-to-Case
Case·to-Sink

._---.---

Junction-to-Ambient

RthJC

ALL

RthcS

ALL

RthJA

AL~

- - - -.

-

-

1.0

K/W

0,1

-

K/W Mounting surface flat, smooth, and greased

-

30

K/W Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
Reverse Recovery Time

Is
ISM

ALL
ALL

Vso

ALL

t"

ALL

-

~
G

-

24.0

A

showing the integral ,
reverse P-N junction rectifier

1,5

V

Tc=25°C, Is=6,OA, VGs=OV

800

-

ns

TJ=150°C, IF=6,OA, dlF/dt=l OOA/jis

6,0

A

Mod_ MOSfET "mbd

s

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300"s, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max, junction temperature

c8

SAMSUNG SEMICONDUCTOR

319

N-CHANNEL

SSM6'N55ISNSO

,POWER "MOSFETS ,;:
1~

2

/I

VGS""6.5V

f-: ~~~-7V

80JiS Pulse Test

80jAS Pulse Test

0

v~-lv-

12

TJ -125°C
TJ -25°'c

I(:.

V~anlxAostanl""

T,-

f-,

·c

5

8

6

Voo -55V

6
4

Vas='5V. i=
I

2

,..........:J... 1~5°C

!I.~

VGS"'~5V

~W

Vas=t4V

50
100
150
200
250
Vos. DRAIN-TD-SOURCE VOLT AGE (VOLTS)

300

0

2

An

I
i
Is

PI.

T

'';as-

/.

8

10

12

I

I:SY HDS(.... I

:

14

rr

I

11111111

-~~

ill

~

IW

r,

l00,.s

5

J:=SSM6N6

I;:

Ves-55V

j

/
VGS=6V_

/

O~

,...

,

2

V

2

8

I 11111111 ~~i~~~E~f: I

F~~O.

V

4

'lill
1',~

,Ie 25°C
Tt"'" 5O"C MAX

5F
t-- """
II 11111

1.0KlW
SINGLE PU

)
0

:I

uv

~V

6

6

Typical Transfer Characteristics

10

t

4

' J/

V... GATE-T<>-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

I -I..

TJ=25°G
/TJ=-'SSoC

VGS",,1.5V

1/
8,

1216
Vos. DRAIN-T<>-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

siNi" lIT

2

VGS~4V

4

100m0
SSM6N60

0, 1
20

1.0

2

5
10
20
50 100 200 500
Vos. DRAIN-TD-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

,
2

IE
o-,z

1.

0

~ ~ o. 5
~t
~~
lb.z 0 ,2

~~

~!i

I-n_

NOTES

-

0 ,1

S;...I

a:.c

ilo.o5

InSL
'

"""

_n_ ,

J~

j

~I;;ii

-0=

p~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

1. Duty Factor O...

,'I

..!!..
I,

2 P&r Umt Ba8e=Ru...c""'.O Deg'PJW
3. T",.-Tc=PDMZt..Ic tl)
"
.

0_02
,0_0 1
10

I
~

5

10~

2

5

n,

-2
10-'
10-'
5
2
5
SQUARE WAVE PULSE DURATION (SECONDS)

10-

2

Lilllli,~

,-

5

,

'1-' -I I II
2'

5

10

,

Maximum Effectl•.!' Transient Tharmallmpadance Junctio,..to-Case Vs. Pulse Dura~iol\

c8 ~AMSUNG

SEMICONDUCTOR

'.320

N-CHANNEL

SSM6N5516N60

POWER MOSFETS

10

Ill'
5

TJ -25°

,.

TJ =- SOC
~

~

~ ~=125°C

~
~ toV
I~ ~

A

0

Tr 160"C

~

L

5

'V/
r/.1/

2
Vos~X~"",_

8O,.s Pul8eTest

0

V

5

f--

f-2

0

4

1

12
8
16
10. DRAIN CURRENT (AMPERES)

TJ""1 5O °C
T.-~5°C

I

1

20

2

4

Typical Source-Drain Diode Forward Voltage

2.5

1.25

1.15

>

i

~

r--L./'

~a1.05

i-""

~.

V

..,.,.. / '

II!~
=::;

we

fill

~~ 0.95 V

/""

'./ V
0

-

~

~

0.85

I

0.75

o

40

40

80

120

160

o

-40

V

./

VGS""'OV
~~3A

40

160

5

v,,~o

J .l J

'''''1 MHz

2,400

Qss-Cgs+Cgd, Cds SI1ORTEoQas~Cgd

I

I

20

eo.s=Cds+:'ti - i .e."'Cgd

1

Vos=12OV

15

\

VllS7300V
Vos=48OV

~

1.200

CIos

10

1..

o

120

Normalized On-Resistance Vs. Temperatura

3.000

600

80

TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

1.800

V.
./

0

T.h JUNCTION TEMPERATURE (OC)

~

~~

W

1o-7.5A

~\
"-

.f

Coos
10

, 20

1/

30

40

50

V... DRAIN-TMOURCE VOLTAGE (VOLTS)

Typical Capacitance Vs. Drain'to Source VOltage

c8

3

Vso. SOURCE·TO-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Va. Drain Current

O~

~

SAMSUNG SEMICONDUCTOR

o

20

40

60

80

100

ag• TOTAL GATE CHARGE InC)
Typical Gate Charge .Vs. Gat.To-Source Voltage

321

N-CHANNEL
POWER MOSFET~i

~S"'N55/6N60'

f

-

I

LV

~~E~~~~O~~.OjlsIDUAA ION
INITIAL TJ-=25 G C

(HEATING EFFECT OF 2.0jAS

PULSE IS MINIMAL)

Voo=10V

z

o

~

I

II

......V

~~

./

1.#

'/vGS=20V'

I

8

~

r-- r----.
4

r----. b--.

55MBN60

......

r--.....
~

2

,

~

J

10
15
20
DRAIN CURRENT (AMPERES)

25

1o.
Typical On-Resistance Vs. Drain Current

,160

1

IO(on)XROS(on) max.• 10=3.0A

-

VGS(Ih)

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

-

Gate-Source Leakage Reverse

IGSs

ALL

...,...

Zero Gate Voltage
Drain Current

lOSS

ALL

-

On-State Drain-Source
Current (2)

IDlon)

Input CapaCitance

Ciss

ALL

Oui~ui Ci:l~i:Iciiance

Coss

ALL

Reverse Transfer Capacitance

Cras

ALL

!d(on)

ALL

t,

ALL

!d(OIl)

ALL

tl

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qgs

ALL

QgeI

ALL

Turn-On Delay Time
Rise Time
Turn.:off Delay Time
Fall Time

,

.

Gate-Drain ("Miller") Charge

-

:

4.5

V

100

nA

VGS=20V'

-100

nA

VGs=-20V

-

A

Vos>IO(on)XROS(on)

VGS=10V.10=3.0A

250
1000

2300 2800

Vos=VGs. 10= 250lAA

IAA Vos=Max. Rating. VGS=OV
IAA Vos=Max. RatingXO.8. VGS=OV. Tc=125°C
max .•

VGs= 10Vo

pF

200

250

pf VGS=OV. Vos=25V. f=1.0MHz

50

100

pF

90

ns

200

ns

450

ns

150

ns

60

nC

,20

nC

40

nC

KIW

-

.-:
Voo=0.5BVoss. 10=3.0A. Zo=4.70
(MOSFET switching limes are essentially
Independent of operating temperatureJ

VGS=10V. lo=7.5A. Vos=0.8 Max.
Rating'(Gate charge is essentially independent
of operating temperature.)

THERMAL RESISTANCE
Junctlon-to-case .

RlhJc

ALL

Case-ta-Sink

RIhCS

ALL

Junction-to-Ambient

RIhJA

ALL

-

-

0.83

0.1

-

-

-

30.0

K/W Mounting surface fllit. smooth. and greased

KJW Free Air Operation

SOURC.E-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol Type

Continuous Source Current
. (Body Diode)

Is

ALL

Pulse Source Current
(Body Diode) (1) .

ISM

ALL

Diode Forward Voltage (2)

Vso

ALL

trr

ALL

Reverse Recovery Time

Min Typ

- .-

SOO

Max Units
6.0

A

24.0

A

Test, Conditions

....... MOSFET._ .~
showing the integral
G
reverae P-N junction rectifier.,

s

1.5

V

Tc=25°C. Is=6.0A. Vcis=OV

-

ns

TJ= 150·C. 'IF=S.OA. dIF/dt= 1OOA/lAs

Notes: (1) TJ=25°C to 150°C

,
(2) Pulse test: Pulse width<300jAS. Duty·Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

'cR

SAMSU.NG SEMICONDUCTOR'

324

N-CHANNEL.

'SSM6N70
30

POWER MOSFETS
20

t-- t- v ~'0J.k
CfS

5

lfl
rI
/ilL

0

5

/~""8V

II

ao,.si-T~,I.

18 r-VDVlDIontXRoa.onI _

eo,..aPuI&e Test

~

16

i:

VGS""6V

10

u.

8
0

5

TJ-1~5°C

,,

6

Ii

2
40

80

120

160

200

o

240

2

VOS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

8Jpulse~est

Vas=1OV

vOEJ'-av
VC'lS'=~V_

r--

4

6

8

10

12

14

V.... GATE-To-BOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

0

I

,L, '(/

Vos-4V

0

T, __ 551e

L

VGS=5V

j

TJ =25°C

Typical Transfer Characteristics

-

~

~
~ )0""
~

~~

II

.~F"
~

4,

J

L

~
VIJ$=5V

~

II

0~-:;2!; 0. L. L.;51: !0'-U,f;!0; ;0-:;7; : ; -N.l. 6, ;5 0 ~U~J.I

VCB~4V

10

20

30

40

1

o ':;.o:--!:-.L..!..J
Il;Ll.LIIJ,J
I U\,;,

50

Vos. DRAIN-TO-SOURCE VOlTAGE (VOLTS)

Vos, DRAIN-To-BOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

.

Maximum Safe Operating Area

2

z

z~

~i

1. 0

W'" O. 5
>IIC

0':"05

ti~

~~
WZ O. 2
"C

~fil

~i

0-0.2

O~!1cl

o. 1

:IE ...

... 05

IICC

0-0.

u~
11-

0-001

~

i

i! 0.05
0.02

0.0 1
10'

10....

5

10-3

2

5

10-1

2

5

10- 1

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

c8

SAMSUNG SEMICONDUCTOR

10

N-CHANNEL

POWER::J/lbSFErS

SSM6N70·
20

10

z

~

SOfAS Pulse Test

16 I--

_ Vo.o;>IO(cnI XRDS(OI1I max

"'
!!

I!!

~

/"

12

()

~

I!'

I-""

.......

~V

W
0:
W

TJ = 55°C

"-

I=25.J-

-

TJ-125°~

2
0

,

TJ",25°C
TJ -150°C

So
Z

"'
0:
0:
~

5

z

:c0:

2

c

W

"''">
"'

0

0:

iV
I

t

:IE
I-

()

. /~

V
W/

Ien

....-

,

5

Ii)
Ii)

0:

j

r2r-

'{

r-

TJ 1150o~

T'T

I-

5 C
'

0 1

B
12
16
10. DRAIN CURRENT (AMPERES)

o

20

1

2

3

4

5

VSD. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

Typical Sourca-Draln Diode Forward Voltage

1
5
!",

~

5

./

5\,/

./

I"" .

V

V I---"
V
/'

5

V

V

V
/'

... V

r

5

V

"00""'101,1

10=3f c-

05

0.75

o

-40

40

80

120

160

o
40

0

TJ. JUNCTION TEMPERATURE ('C)

0

5

vGSLo
0

~2.400
~

\
Ciss
1,105""1401,1·
V08=350V
Vos"'560V

~

~'.600

()

I,

o

~~

W
f'...
r----.: -...
10

Y~s.

Coss

c...
20

30

40

50

DRAIN-TO-SOURCE YOLTAGE (YOLTS)

Typical Capacitance Vs. Drain to Source Voltage· .

c8

.~ ~

~~

0\

80

J

20

!::

U

160

EFFECT OF 2 OI4S PULSE IS MINIMAL)

Cds SHORTED

Coss=Cds+ CgsCgd
Cgs+Cgd
:::cds+Cgd

\
1

120

~on) MEi.sURE~ INITIAL
WITH ICURRJNT PUlsE OF1
T =25°0 (HEATING

t-- 2.01$ DURATION

f 1 MHz

3.20

80

Normalized On-Resistance· Vs. Temperature

4,00

~::~:+Cgf'

40

TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

i

~

SAMSUNG SEMICONDUCTOR

o

/

L

lo=l5A

28

56

84

112

ag• TOTAL GATE CHARGE (nC)

140

Typical Gate Charge Vs. Gate-To-Source Voltage

N-CHANNEL
POWER MOSFETS .

SSM6N70

t--

10

~J ME,lRED ~ITH C~RRENJ PUJ OF
2.0,.. DURATION. INtTlAL T -25°C. (HEATING
J

EFFECT OF 2

o,.a PULSE IS MINIMAL)

.

61_

3

~

V 05 ",,1QV

~

1

e

8

1----"'1""'"

10

~ Pv':"'2OV

r- 1"-....

-

~M6N70

4

r---..

2

12

14

16

18

20

I •• DRAIN CURRENT (AMPERES)

0 25

50

75

100

"-

125

\

,
150

Te. CASE TEMPERATURE ("C)

Typical OMlesistance Vs. Drain Current

Maximum Drain Current Vs. Case Temperature

160
140

5"

120

~

100

I
II:

~

',f

r-- t"'\.
~
'\

I

~

'\

.'\

80
60

'\...

a

~

a
20

40

60

80

100

120

~

140

160

T,. CASE TEMPERATURE ("C)

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

327

N-CHANNEL
POWER. MO$FETS

,SSM8N5518N60
FEATURES
•
•
•
•
•
•
•
•
•

Low RDS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low, input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High vol~age)

TO-3

PRODUCT SUMMARY
Part Number

VDS

RDS(on}

ID

SSM8N55

550V

1.00

8A

--_ ..

1 nO

....... a_ •. __

ouuv

~MOI'JOU

I

-.

OA

I
MAXIMUM RATINGS
Symbol

SSM8N55

SSM8N60

O;lIt

Drain·Source Voltage (1)

Voss

550

600

Vdc

Drain·Gate Voltage (RGs=1·.OMO) (1)

VOGR

550

600

Vdc

Gate·Source Voltage

VGS

CharacterlsUc

Continuous Drain Current Tc=25°C

,±20

Vdc

10

8.0

8.0

Adc

10

5.0

5.0

Adc

Drain Current-Pulsed (3)

10M

32

32

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipat,ion @ Tc=25°C .
Derate above'25°C

Po

150
1.2

Watts

W/oC

TJ, Tstg

-55 to 150

°c

TL

300

~C'

Continuous Drain Current Tc=100°C

Operating and Storage
. Jl!nctiQn Temperature Range.
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case. fo(5 seconds

. Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pul'se width.. 300,..s, Duty Cycle.;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUN~ SEMICONDUCTOR

N-CHANNEL
POWER MOSF~TS

SSM8N55/8N60
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

(Tc=25°C unless otherwise 'specified)

Min Typ

Drain-Source Breakdown
Voltage

SSM8N55 550
BVoss
SSM8N60 600

Gate Threshold Voltage

Max. Units

VGs=OV
10.=250IlA,. ______________

4.5

V

Vos=VGs. 10=250,..A

100

nA VGs=20V

-

ALL

S.O

-

Static Drain-Source On-State
RoS(on)
Resistance (2)

ALL

-

0.7

1.0

-

VGS(th)

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current (2),

10(on)

ALL

Test Conditions

V
V

--

-100

-

A

Vos>IO(on)XROS(on) max .• VGs= 1OV

0

VGs=10V.10=4.0A.

I}

Vos>IO(on) X ROS(on)

250
1000

nA VGs=-20V

--

,..A Vos=Max. Rating. VGs=OV

,..A Vos=Max. RatingxO.S. VGS=OV. Tc=125°C

10=4.0A

Forward Transconductance (2)

gla

ALL

5.0

5.5

Input Capacitance

Cisa

ALL

2600 3000

pF

Output CapaCitance

Coss

ALL

400

600

pF VGs=OV. Vos=25V. f= 1.0MHz

Reverse Transfer CapaCitance

CIlIS

ALL

130

200

pF

Tum-On Delay Time

!d(on)

ALL

ns

ALL

200

ns

td(off)

ALL

tl

ALL

Qg

ALL

Gate-Source Charge

Qga

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

90

t,

-

Rise Time
Tum-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

rna•. '

150

Voo=0.5BVoss. 10=4.0A. 20=4.70
(MOSFET switching times are esseniially
ns
independent of operating temperature.)
ns

120

nC

450

40
SO

I

VGs=10V. 10=10.0A. Vos=O.S Max.
Rating (Gate charge is essentially independent
nC
of operating temperature.)
nC

THERMAL RESISTANCE
ALL

-

0.1

-

ALL

-

-

30.0

Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

Junction-to-Ambient

RthJA

-

0.S3

K/W
K/W Mounting surface flat. smooth, and greased
KIW Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)
l"'ulSe ~urce liurrent
(Body Diode) (3)
Diode Forward Voltage (2)
Reverse Recovery Time

Symbol

Type

Min Typ

Is

ALL

-

ISM

ALL

.,....

Vso

ALL

trr

ALL

-

SOO

Max

Unite

S.O

A

32.0

A

1.5

-

Test Conditions

"'m""~

""""'"
MOSFET
showing the
integral

reverse P-N junction rectifier

G

S

V Tc=25°C. Is=8.0A. VGS=OV
ns TJ=150°C. IF=S.OA. dlF/dt=100Alj.lS

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300j.lS. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

'c8SAMSUNG SEMICONDUCTOR

329

N-CHANNEL
POWER MOSFErS

SSM8N55/8N60
4

VGS=10V~

Iff

0

10
.

8~

Pulse Tesl

V"J7V- r-

If

I

6

I
VGS=6V

//

8

~~::~~~l.

8

I

6

2

VGS-~V

4

r--Tr12~OC

TJ""25°C

4

VGS 5Y=

I--"L C 55'C

t:-

J

~

VGS.14V

0

20
40
60
80
100
Vos. DRAIN-TCl-SOURCE VOLTAGE (VOLTS)

120

0

15
3
4.5
e
7.5
9
VO•• GATE-TCl-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

60~PUlse

Test

/. /

j '/
---4~
~

.J

J

2

Typical Transfer Characteristics

'I I 111111"

10

I

~

I
I

vGS"",ev

I 11111111

I I1111111

: : :::. OPERATION IN THIS AREA
IS UMITEO BY Rose",,)

-

I--SSM8N60

~8Ll.!

V13S=55V

,

/

""
/

VGS=SV-

Tc ... 25°C

F=
~

I

TJ -1 50 0 e MAX

i

I\.

VG

100ms

81""L.E PULSE

Typical Saturation CharacteristIcs

SS~8N~~=

2

=4~

2
4
6
8
V... DRAIN-T()'SOURCE VOLTAGE (VOLTS)

10

o. 1

1 '11

68 8

1.0

~

I'

R"" -083 KJW

VG6=4.SV

1/

I~W

10

2

,jJ

m

5
10
20
50
100 200
500
V... DRAIN-T()'SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

iii""

f2
~~

","
~~
~~
wz

1. 0
0.5

0':"05

lo.on,xRos."", I'I'Ial<
I

V
/

..c:. ~

'/' t.,...--' ~

/~ /'

--

TJ -25°C

TJ=125°C

Ih V
tV

,II

a

2

4
6
8
10. DRAIN CURRENT (AMPERES)

0'~~---'~~~2--~~3~~~4---~~5--~~

10

VSD. SOURCE·TCl-ORAIN VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

Typical Source-Drain Diode Forward Voltage

2. 5

1 25

w

~
~

115

z

,......

~

~S'

Ww

,../'
1 05

i~

./

wC
":IE
a: a:

g~ 0.9 5"....

i
~

l

I

. / ' ~.

./

~iS
~~

/'

V
./

1.5

§;!

V

~~

I-~

/'

1.0

I

/

./'
0.5

a:
0.75
-40

-

o

a

40
80
120
TJ. JUNCTION TEMPERATURE ('C)

4,000

3.200

I

Iii

I

i

Coss=Cds+CgsCr oJ

Cgs+Cgd

ClI

Co..

~

§!

[

15

Voa 120V
Vos-300V
Vos""480V

~

II:
:::J

~

"<.i
800

20

w

==Cds+Cgd

i

\\

10

......

.>It
Coss
C

08

-- -

~

~

~

I'..

SSM8N60

.........

4

,

r-..
~
~

"

C

0.4

IS

J

2

10

20

0 25

.30

'" DRAIN CURRENT (AMPERES)

140

8if
I15

"I\.

•

2

"I\.'\

100

8

°

''\

60

,

40

t"
0
0

20

40

'"

~

60
80
100 120
To. CASE TEMPERATURE ('C)

~

140

Power Vs. Temperature Derating Curve

c8SAMSUNG

75

100

125

150

Maximum Drain',Current Va. Case Temperature

16°H=:1
i

50

Te. CASE TEMPERATURE ('C)

Typical OMleslslance Vs. Drain Current

~ 120

~

S~MICONDUCTOR

160

N-CHANNEL
POWER MOSFETS

.sSH3N70
FEATURES
Low ROS(on) 'at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

•
•
•
•
•
•
•
•
•

TQ-3P

PRODUCT SUMMARY
I

Part Number

Vos

ROS(on)

10

I

SSH3N70

700V

5.0 Il

3A

II
MAXIMUM RATINGS
Symbol

SSH3N70

Unit

Drain-Source Voltage (1)

Voss

700

Vdc

Drain-Gate Voltage (RGs= 1.0MIl) (1)

VOGR

700

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Continuous Drain Current Tc=25°C

10

3

Adc

Continuous Drain Current Tc=100°C

10

2·

Adc

Characteristic

Drain Current-Pulsed (3)

10M

12

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25 ° C

Po

75
0.6

Watts
W/oC

TJ, Tstg

-55 to 150

TL

300

Operating and Storage
Junction Temperature Range

I

Maximum Lead Temp. tor Soldering
Purposes, 1/8" trom case tor 5 secon~s
Notes: (1) TJ=25°C to 150°C

(2) Pulse test: Pulse Width~300,.s, Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

Adc

SAMSUNG SEMICONDUCTOR

°C .
°C

N-CHANNEL

SSH3N70

. POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol .Type

Min

(Tc=25°C unless otherwise specified)
Typ

Drain-Source Breakdown
Voltage

BVoss

ALL

700

Gate Threshold Voltage

VGS(th)

ALL

2.0

IGSS

ALL

-

Gate-Source Leakage. Reverse

IGss"

ALL

-

Zero Gate Voltage
Drain Current

loss

ALL

-

-

On-State Drain-Source
~urrent
Current (2)

10(on)

ALL

3.0

Statio Drain-Source On-State
ROS(on)
Resistance (2)

ALL

Forward Transconduotanoe (2)

Gate-Source Leakage Forward

gts

Max

4.5
"·100

V

VGs=OV
10= 250/AA

V

Vos=VGS, 10=25O/AA

nA

VGs=20V

-100

nA

VGs=-20V

250

/AA

Vos=Max. Rating, VGs=OV

1000

/AA

Vos=Max. RatingXO.B, VGs=OV, Tc=125°C

-

-

A

Vos>IO(on)XROS(on) max., VGS= 1 OV

-

4.B

5.0

0

VGs= 1 OV, 10= 1.5A

ALL

3.0

2.5

-

()

Vos>IO(on)XROS(on) max., 10=1.5A

pF

Input Capacitanoe

CiSO

ALL

-

730

900

Output Capacitance

Cn~~

ALL

-

70

7F.

rF

Reverse Transfer CapaCitance

Cros

ALL

20

25

pF

Turn-On Delay Time

td(on)

ALL

40

ns

tr

ALL

95

ns

td(~ff)

ALL

150

ns

tt

ALL

60

ns

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

25

nC

Gate-Souroe Charge

Qgo

ALL

10

nC

Gate-Drain ("Miller") Charge

Qgd

ALL

-

15

nC

K/W

Rise Time
Turn-Off Delay Time
Fall Tinie

Test Conditions

Units

-

"GS=OV, Vps=25V, f=1.0MHz

Voo=0.5BVoss, 10= 1.5A, Zo= 150
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=10V, 10=4.0A, Vos=O.B Max.
Rating (Gate oharge is essentially Independent
of operating temperature.)

THERMAL RESISTANCE
Junction-to-Calle

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

ALL

-

-

1.67

0.1

-

-

BO.O

K/W. Mounting surface flat, smooth, and greased
K/W Free Air Operation

SOURCE~DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Souroe Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode. Forward Voltage (2)
Reverse Recovery Time

ALL

-

-

ISM

ALL

Vso

ALL

-

trr

ALL

-

Is

500

3.0

A

12.0

A reverse P-N junction rectifier

ModHWd
MOSFET.'showing the integral

~

[ G

[

. s .

1.5

V

Tc=25°C, Is=3.0A, VGS=OV

-

ns

TJ=150°C, IF=31.0A, dIF/dt=100Al/AS

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse wjdthI~onIX~onl ....

60

i

Vas=55V

3

/11

r
II

80,..s Pulse Test

f--

5

J

/J

3. 0

II/

1. 5

1

TJ ""125°

TJ=25OC,~.:::1i

Vos=145V

TJ""-5S o C

50
100
1 50
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

300

1

5

80~ Pulse ~esl

2

~ r-- VGS=yVas 10V

10

,

5
OPERATION IN THIS AReA

VGS-7V

V

3

1£

5

Typical Transfer Characteristics

~~

4

4

3

2

VGS=J 5V

~ I-"""

IS LIMITED BY Ros!onl

t-n

--

-"

t-SSH3N70

If'

Voo""SV

J'

1

/

10,..

,

J

2

V

v••, GATE-TO-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

o

m

V"~4V

o

'(1/

III

JJJ'
1m.

c 25°0
TJ 150°C MAX
Rowe-1.67 KIW

vGS"",J 5V'

-'-

vos"",Jv
10
20
30
40
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

mGLETSj

/
/
50

Typical SaturatiOn Characteristics

0.1

ill

.....

I

SSH3rO

1Oms

6,;T

5
10
20
50
100 200 500
VOS, DRAIN-To-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

0
5

0=05

1

olo.l
o:ro.ds

~

......

.....

SINGLE PULSE ITRANSIENT
THERMAL IMPEDANCE)

0=0.02

5

-

-+""
i--" ~;iiIi

0""02

2

NOTES

InSL
~1-j

0-001

... 1"""

1. Duty Factor, O=J!.

t,.

2

2

Per Unll Base=RlhJC""1.67 O9g. C/W.

3 rJAr"Tc"pDI\IZIhJC ttl·

1

-.

10

.,

10
2
5
10-,
2
5
10-,
t1, SQUARE WAVE PULSE DURATION (SECONDS)

I I 111111

I I

I I III
10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs_ Pulse Duration

=8

SAMSUNG SEMICONDUCTOR

335

N-CHANNEL
POWER ,MOSFETS
la'

,

10

~PulseTest

\

,f

J

I

I

,",

i!

;

6

u

V

ill
~

~

T,=25·d-

I--"'"

L

TJ ""125"C-

/ ~ i-'" I---

)!/::V

2

,

~

"'L- 15O' C

I~

'"',
o

I!-::'TJ =25"C.

0, 1
3

4

5

6

7

8

9

a

10

1

10. DRAIN CURRENT (AMPERES)

~

1 I I I I,

"''''
iii!:>!

g!
~i

i!!i

3

Typical Sourc_Draln Diode Forward Voltage,

II
a

1.1 5

~
:::is

2

V... SOURCE.ie-DRAIN VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

125

V

l,.....'
1 05

0.9

r-- -

b'

TJ--55"C

,~

~

TJ ""'150"C_

T =25°C

Vos>!IXonlXRD$,IOlon)XROSlon) max., VGS= 1OV
f---~------'----------~---.

Static Drain-Source On-State
Resistance
(2) ROSlon)

ALL

-

2.0

3.0

0

VGs= 10V, lo=2.0A

Forward Transconductance (2)

gfs

ALL

2.0

3.1

-

0

Vos~lo(on)XRos(on) max.

Input Capacitance

Ciss

ALL

7201 900

Output Capacitance

Coss

ALL

--.~-

Reverse Transfer Capacitance

Crss

ALL

-

Turn-On Delay Time

td(on)

ALL

-

t,

ALL

ld(off)

ALL

-

Rise Time
Turn-Off Delay Time
Fall Time

Ii

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Og

ALL

-

,Gate-Source Charge

Og.

ALL

Gate-Drain ("Miller") Charge.

Ogd

ALL

-

lo=2.0A

pF

110

200

40

60

pF

-

40

ns

95

ns

150

ns

60

-~----~--

pF VGs=OV, Vos=25V, f=1.0MHz
---

II

------

Voo=0.5BVoss, lo=2.0A, Zo=·150
(MOSFET switching times are essentially
independent of operating temperature.)

ns

- . - f---

25
10
15

nC VGs=10V, lo=5.0A, Vos=0.8 Max.
Rating (Gate charge is essentially independent
nC
of operating temperature.)
nC

THERMAL RESISTANCE

IJunction-to-Case

RthJC

ALL

ICase-to-Sink

RlhCS

ALL

IJUnction-to-Ambient

RlhJA

ALL

-

-

1.67

0.1

-

-

80.0

K/W
K/W Mounting surface flat, smooth, and greased
K/W Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

Characteristic

I?ontlnuous Source Current
I(Body Diode)
I~ulse Source Current
(Body Diode) (3)
IDiode Forward Voltage (2)

IReverse Recovery Time

Symbol'

Type

Min

Typ

Is

ALL

-

-

ISM

ALL

Vso

ALL

-

trr

ALL

-

600

Max

Units

4.0

A

Test Conditions

Mod_ MOSFET .,_,

~~

showing the integral
reverse P-N junction rectifier _G__ ~

16.0

A

1.5

V. Tc=25°C, Is=4.0A, VGs=OV
ns TJ=150°C, IF=4.0A, dlF/dt=100A/l-is

-

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse wicjth';;300l-ls, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

SAMSUNG SEMICONDUCTOR·

339

"

'

...

N-CHANNEL

sSH4c~55/4N6()

POWER· .M:()$FETS
:0

:==~l

6 .4

iii

~
(l

TJ!12~OC
TJ~25°C_

TJ""-55"C

w

~ 6.4t-:-i".r-t--t-+-+--t--I-+--+-j+-t--I

!...
~

a:

2i

.4

I

:::>

'0

!

.2

TJ"125"C

M
r:tJ
J. VI

3 .2

T)'25"C

TJ--55"C

R
.6

.6

~

VGS""4.5V

50
100
150
200
250
VOS. DRAIN-TCl-SOURCE VOLTAGE (VOLTS}

300

o

I)

I
g

h

3

4

5

~I I 11111111 I 11111111 I 11111111
7TION
0

N THIS AREA

-....l.N~a

--;1"

vGS""ev

"r

5 -SSH4NOa

II.

0

~i=,

-I-

,,

.4 V

t
1/

8

10

2

~~

3. 2

1. 6

IJ

~~

8

2

Typical Transfer Characteristics

VGS-65V

W; .......

6. 4

1

V.... GATE-TCl-SOURCE VOLTAGE (VOLTS}

Typical Output Characteristics

I

,

.8

v",J6V

4 .8

V(J9""55V

'0,.0

~

'Ill!

0

V

~

Ves=5V

1Oms

F-- t- Sl~~~ IPIUI":"

VGS=45V

1o
20
30
40
VDS. DRAIN-T0-50URCE VOLTAGE (VOLTS)

~ ~~:~:~~C MAX
t-- RltIJC= 1.67 KfW

50

Typical Saturation Characteristics

o. 1

,00.;.

JlUIII

SSH4N6a
SSH.,,56

5
10
20
50 100 200
500
Vas. DRAiN-To-5OURCE VOLTAGE (VOLTS)

~II

Maximum Safe OperatIng Area

,I
0
5

0-0.5

- ..

0-0.2

2

1

~

Dla.,
D'!a.ds

NOTES
P,..

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

~1---1

0=0.01

I"""

1 Duty 'Factor

O""..!!..

.
~.
2. Per Unit Base""R.wc-1.67 Deg, CfW.
3. T...-Tc-PDM~ (t).

2

I 1111111

0.0 1
10"'

.

IrLrL

1-'1-'"

0=0.02

5

I"':: ~~,.
~

5

2

10-3
-10-1 •
5
2
10-'
5
2
5
11. SQUARE WAVE PULSE DURATION (SECONDS}

2

5·

I I 1'1 III

1

2

5

10

Maximum Effective Transient Thermal Impedance ~unctlon- to-Case Vs. Pulse Duration

c8SAMSUN~'SEMICONDUCTOR"

340

N-CHANNEL
POWER ,MOSFETS
,

SSH4N55/4N60
7.&

i
~

10'

6.0

..........-

&

I"
4.

. /".... i---""

/ V

. /~

I~ V

i

--

TJ -1 2.:lO.

TJ'=25"C
J - -?~oc

r--

II, /
If

,

1.5

I...

--

TJ =25"C

IE
~

!iw

-

G

IIII
;

w

a:

~'-

j

r~i'·stl
4
6
8
I.. DRAIN CURRENT (AMPERES)

_TJ=25°C

v... SOURCE-T().I)RAIN VOLTAGE (VOLTS)
Typical Source-Drain Diode Forward Voltage

2,5
w

115

i

~O
Ww
i~

~-

V

./

2,0

~

w

a:

..

~s

. /~

we

"'''' 0.95
5~

~

:!

r-...... ........

V

1.05

olE

l

_.!J- 1?O"C

-

O. ~~.--lII-..J,~..I...-l;2,--.L..-3!:-..L---!4-..L...--!-5-'-~

10

1.2&

Q

TJ -150"C

1/

10

Typical TranscondUctance VI. Drain Current

i

lIP'"

'"'"

VCS>Io....,.XRo&!ont _

2

g~

.'

~

~I

/'

t

085

J
o

40

40

80

120

160

II

V

1.5

~;j

i
!

075

,/

./

1.0

V

V

. /~
,...."

YGS=10V
lo"'2A

0.5

o
-40

0

TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

40
80
120
T ~ JUNCTION TEMPERATURE (OC)

Normalized

O~esistance

160

VB. Temperature

5

2,000

v~Lo

f=1 MHz

1,600

Crss=Cgs+Cgd. Cds'SHORTED

I

I

Crss=Cgd
Coss""Cds+ CgsCgd
Cgs+Cgd
::::Q:Is+Cgd

\

\
0

el85"

i\

\

400

\

o

~/
-'l: V-

VD5"300~~

Vo:...,480V.

0

c8

Vos=120V

5

"'

.......

10

:~ '/

// V

5

20

/

Ij

Coss

c...
30

40

/o""5A

50

8

16

24

32·

40

V... DRAIN-T()'SOURCE VOLTAGE (VOLTS)

a•. TOTAL GATE CHARGE (nC)

Typical Capacitance Vs. Drain to Source Voltage

Typical Gate Charge VB. Gat.To-Source Voltage

SAMSUNG SEMICONDUCTOR

341

N-CHANNEL
POWER MOSFETS

SSH4N5514N60
10

i

~

!">

-

R,*ool MEASURED WITH
CURRENT PULSE OF
2 O,ws DURATION

r--- +--

:~~~~N~";:~~~~T ~ 2O,ws

~

.

r---..

PULSE IS MINIMAll

~

'" ":-..
r-....

~

,/

I

VO~

~~:::::::

'\

k ; - Pv'G.~=20V

.

SSH4N60

~

1

c
i

il
I
0

10

4
10. DRAIN CURRENT (AMPERES)

Typical On-Resistance Vs. Drain Current

"

\"
\

25

50

75

100

125

150

Te. CASE TEMPERATURE ('C)

Maximum Drain Current Vs. Case Temperature

ao~
-,

70

"''-'\
'\

0

'"'" "'-

;0

\\.

a

20

40

eo

60

100

120

1,40

160

Te. CASE TEMPERATURE ('C)

Power Vs. Temperature Derating Curve

•

c8

SAMSUNG S.EMICONDUCTOR

342

N-CHANNEL

SSH4N70

POWER MOSFETS

FEATURES
•
•
•
•
•
•
•
•
•

Low ROS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number

Vos

I

SSH4N70

700V

I

ROS(on)

10

2.50

4A

I
MAXIMUM RATINGS
Symbol

SSH4N70

Unit

Drain-Source Voltage (1)

Voss

700

Vdc

Drain-Gate Voltage (RGS=1.0MO)(l)

VOGR .

700

Vdc

Gate-Source Voltage

VGS

±20

Vdc

10

4

Adc

10

2.5

Adc
Adc

Characteristic

Continuous Drain Current Tc=25°C
Continuous Drain Current Tc = 1 00 ° C
Drain Current-Pulsed (3)

10M

16

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

125
1.0

Watts

W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Operati·ng and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Notes: ·(1) TJ=25°C to 150°C
(2) Pulse test: Pulse width";300I-lS. Duty Cycle";2%
(3) Repetitive ratinll: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

343

, N-CHANNEL
POWER MOSFEtS

SSH4N70'
ELECTRICAL CHARACTERISTICS
, Characteristic

,"'.

'.::

:

Symbol

Type

Min

IDrain-Sourye Breakdown
Voltage

,BVoss

ALL

700

Gate Threshold Voltage

A

VOS>lo(on)XRDSlon) max .. VGS= 1 OV

0

VGS= 10V. lo=2.0A

U

Vos>lo(on)X Ros(on) max. lo=2.0A

Gate-Source Leakage Reverse

IGSS

ALL

-

1000n)

, ALL

V

4.5

V . Vos=VGs. lo=250,.A

100

nA VGS=20V

250
1000

Static 'Orain-Source On-State
Ros(on)
ReSistance (2}

ALL

-

2.25

2.5

Forward Ti:ansconductance (2}

ALL

2.5

3.6

-

91.

nA

CiSS

ALL

-

1120 1S00

Cu~·

.A.LL

-

190

200

....

Reverse Transfer Capacitance

'e...

ALL

70

75

pF

Turn-On Delay Time

td(On)

ALL

ns

ALL

-

60

t,

-

150

nil

Fall Time
Total !late Charge .
(Gate-Source Plus Gate-Drain}
. Gate-Source Charge
Gate-Drain ("Miller") Charge

td(off)

ALL

tl

ALL

Og

ALL

Qg•

ALL

QgeI

ALL

pF
nO::

--:-

300

ns

-

130

ns

-

40

nC

15
25

VGs=-20V

,.A Vos=Max, RatingXO.S. VGS=OV. Tc=125°C

1"\ ........... ,.... ..............i.O'!Io ....... ".
_ ... Lt'.... ...,U,t'............'" .......

Turn;Off Delay Time

~

,.A Vos=Max. Rating. VGS=OV

Input- CapaCitance

Rise'Time

VGs=OV
lo=250,.A

-

2.0

ALL

On-State Drain-Source
Current (2)

-

Test Conditions

Units

4.0,

ALL

IGSS

ALL'

Max

-100

VGS(th)

loss

Typ

-

Gate-Source Leakage Forward

Zero Gate Voltage
Drain Current

(Tc=25°C unless otherwise specified} ,

\.JGS-QV. Vu~;'-25V. f~1.0MHz

Voo=0.5BVbss. lo=2.0A. Zo=4.70
(MOSFET switching times are essentially
independent of operating temperature'.)

VGs=10V. lo=5.0A. Vos=O.B Max,..
Rating (Gate charge is essentially independent
nC
of operating temperature.)
nC
/

/

THERMAL 'RESISTANCE
Junction-to-Case

RlhJc

ALL

Case-to-Sink

RthOS

ALL

Junction-ta-Ambient

RIhJA

ALL

-

-

,1.0

K/W

0.1

-

-

SO

KIW
KIW

Mounting surface flat. Smooth. and greased
Fr~e

Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Cha;acterlstlc
Continuous Source Current
(Body Diode}

SYfllboI

Type

Min

Typ

Is

ALL

-

-

ISM

ALL

Diode Forward Voltage (2)

Vso

ALL

trr

ALL·

Note~

4.0

A

16.0

A

\

Pulse Source Current
(Body Diode} (3)
Reverse Recovery TIme

...X Units

-

600

1.5

V

-

ns

Test Conditions

-...m-l~

showing the integral .
reverse ,P~N junction rectifier

,s

Tc .. 2S·C. Is==4.0A. VGS=OV
TJ-150·C. IF-4,OA. dlFlilt-1 OOAl,.s:

(1) TJ=25~C to (150'C
(2) Pulse test: Pulse width<300,.s. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max, junction temperature'

.c8SA~SUNG SEMICONDUCTOR

,G

i

,

"

N-CHANNEL
POWER MOSFETS

"

SSH4N70
2

t--.10

rn

20

-.",..LTesI

-

GS :Z 7V

~ J- VGS,",,1OV

Vos>I~XRDSIonI_

,

16

I

0;

w
a:
w

VGS-55V

...

~
....

12

,

Z

w

a:
a:

VGS-5V

i3

I

8

Z

c
VQSJ 45V

1

VGS 4V

o

M
I rtH

2i

f-

TJ.125 0 C

s

300

.$

0

1

ea,.s Pulse Test

~

8

~

f-

1/

"as=5V

V'

f

I,L
10

,
1_

"

Tc -25°C

111

"),,"

Ti""150"C MAX
Rr...c-1 0 KIW
""""-E PULSE

100ms

w

/

vas- 4V

III

o1
8
16
24
32
VDS. DRAIN-TCl-SOURCE VOLTAGE (VOLTS)

40

1.0

2

II

SSH4N70

~TI

5
10 20
50
100 200
500
VOS. DRAIN-TCl-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

1.0

~Z

'-0-

~"

0.5

~~
wz

0.2

fi~

II

r-SSH4N70

Typical Saturation Characteristics

I~

~

~~ ~:

t7"

0

rr/"

o

6

OPERATION IN THIS AREA IS UMITED BY

"GB 4 5V

2

5

5

Vas=5~5V

~

4

4

10
£Vo.s-10V
-V08=7V
-VGS=6V

2~.!"ff

I

3

Typical Transfer Characteristics

.~ ~

6

2

Vas. GATE·TCl-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

0

I

TJ =25"C
TJ IIO-55°C

.'

I--

50
100
150
200
250
VOS. DRAIIHCl-SOURCE VOLTAGE (VOLTS)

I

J

OC

~Iil o. 1
ci

r:

-

IE ....

a:C

~1ijjI
~

'D-

-

0-

~
~i~

SINGLE PULSE (TRANSIENT

THERMAL IMPEDANCE)

1 Duty Factor. D=~

1,
2. Per Unit Baae""'Rt..c-1.0 Deg C/W.
3 T...-Tc·PDMZIIIJC (tJ.

0_01

10"'

NOTES

i""

10---

5
10-,
2
5
10-z
2
5
10
11. SQUARE WAVE PULSE DURATION (SECONDS)

I 1111111

I I 11111
10

I

.

Maximum EHectlve Transient Thermal Impedance Juncllon-to-Case Vs. Pulse Duration
I

c8

SAMSUNG SEMICONDUCTOR

. 345

I

: .,'

N-CHANNEL
'POWER MOSF.ETS

SSH4N70
16.0

10'

r- -18~.Lrl

f

ffi
0.

12.8

~
IEw

I
~

9.6

.",...

I

V

10

:::>

~
is

TJ=12~.C

// V
I.V
t
fJ
If
o

IJj
0:

4

1.0

W

>
W

0:

j

3.2

1.25

Tr 115
TJ"'25°C

I .

0.1

e

12
16
ID. DRAIN CURRENT (AMPERES)

1

20

2

3

4

5

VOD. SOURCE·TO-ORAIN VOLTAGE (VOLTS)

Typical Source-Drain Diode Forward Voltage

IJ [

1

!\l

-

~

1.15

i

".

'~S'1.05

i~

wC

V ....

V

....... ~

/

V

.

./'"

./
. /V

u:&

0:0:

~i

0.95

i

0.85

... V

V

..-

-40

0
40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

-40

Breakdown Voltage Vs. Temperature

2000

\

I~

o \

\

400

o

"--

I'

I'--.

.......

i--

ID ""2A

0

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

25

2 O~ DURATION INITIAL TJ=25°C. (HEATINGEFFECT OF 2.0~ PULSE IS MINIMAL)

~
.lU 1200

VGS=10V

Normalized On-Resistance Vs. Temperature

A~, M~.sUAJD WIT~ CUA~ENT pJLSE J,

1600

.......... V

o

0.75

~
~

20

w

C!I

~

C>so

~

15

~

!.

VosR'40V

-

I-- V.,= 359V ,
Vos=S60V"')

10

'~
'(/

C

C!I

:'t

Co..

I

C...

10
20
40
V... DRAIN-TO-SOURCE VOLTAGE (VOLTSI

50

Typical Capecltance Vs. Drain to Source Voltage

c8

O:?

-

-

Typical Transcounductance Vs. Drain Current

u

TJ.J50 O C

u
TJ=2SoC

6. 4

Zc

r---

j,'f'

0:
0:

TJ ,",-55°C

~

TJ'''2S<>C

!a

VOS>IDI IXADSj I ....

SAMSUNG SEMICONDUCTOR

J.V
W
Ip=>SA

/
20

A..

40
60
80
TOTAL GATE CHARGE (nC)

100

Typical Gate Charge Vs. Gate-To-Source Voltage

346

N-CHANNEL

SSH4N70

POWER MOSFETS

5.0

iii
IE

'"~w
(,)

Rest,.,l MEASURED WITH CURRENT PULSE OF
20"s DURATION

lNITI~

TJ=25 D C (HEATING

-

44 ~ FFEC OF 2 us PU E IS MINIMil

~

"""'" ............

z

~a:w

VGS=!OV- ~

3.8

~~

z

0

~

a:
;>

~

~

32

~

C
a: 2.6
c

f

a:

....

-

./

V

l/

...... 1'--

i'-

Voo .. 20V

""

'"

SSH4N70

.....

~
~

,

\

20
8
12
16
I•• DRAIN CURRENT (AMPERES)

20

25

50

75

100

125

150

Tc. CASE TEMPERATURE (OC)
Maximum Drain Current Vs. Case Temperature

Typical On-Resistance Va. Drain Current

160

140

~

120

~

!

~

..!C

~

"1\.,

100

I\.

80

'I\.

~ eo

~

i

II

k.

C

,
I\.

40

",
I\.

20

20

40

60
80
100
120
To. CASE TEMPERATURE (OC)

I\.

140

160

Power Vs. Temperature Derating Curve

=8

SAMSUNG' SEMICONDUCTOR

347

N-CHANNEL
POWER MOSFETS

SSH6N55/6N60
FEATURES

•
•
•
•
•
•
•
•
•

Low RDSton) at high voltage
Improved Inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polyslllcon gate cell structure
Low input capacitance
Extended Safe operating area.,
Improved high temperature reliability
TQ-3P package

TO-3P

PRODUCT SUMMARY

l Part Number
~SM6N55

YDS

RDS(onl

ID

550V

1.8'0

6.0A

SSM6N60 '

600V

1.810

6.0A

I

I

I

I

MAXIMUM RATINGS
Characteristic

Symbol

SSH6N55

SSH6N60

Voss

500

600

Vdc

600

' Vdc

Drain-Source Voltage (t)
Drain-Gate Voltage (RGS= 1.0MO) (1)

VOGR

550

.Gate-Source Voltage

VGS

,

i

±20'

Unit

',Vdc

Continuous Drain Current Tc=25°C

10

6.0

--.iU>

Adc

Continuous Drain Current Tc= 100° C

10

4.0

4.0

Drain Current-Pulsed (3)

10M

24

Adc
,Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power DiSSipation @ Tc=25°C
Derate above 25°C,

Po'

125
1.0

Watts
W/·C

Operating and' Storage
Junction Temperl:!ture Range

24

,TJ, Tstg

-55 to 150,

TL

300

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

"

"

,~C

·C

Notes: (1) TJ=25·C to l,50·C
(2,) Pulse test: Pulse width"300,..s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR'

," :.' '3~8
,

"

.

N-CHANNEL
POWER MOSFETS

SSH6N5516N60
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

(Tc=25°C unless otherwise specified)

Min Typ

Drain-Source Breakdown
Voltage

SSH6N55 550
BVoss
SSM6N60 600

Gate Threshold Voltage

VOS(th)

ALL

loss

ALL

Gate-Source Leakage Forward
Gate-Source Leakage Reverse

loss

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current (2)

1000n)

2.0 - - ...,. - 6.0 -

ALL
ALL

ALL

Units

-

V
V

Vos=OV
lo=250"A

4.5

V

Vos=Vos. lo=250"A

100

nA

Vos=·OV

-100
250
1000

Vos>IO(on)XROS(on)

"

Vos=10V lo=3.0A

-

1.15

1.8

Forward Transconductante (2)

gf.

ALL

3.0

4.8

-

-

Ciss

ALL

COBS

ALL

Reverse Transfer CapaCitance

C,..

ALL

Id(on)

ALL'

T,

ALL

Turn-On pelay Time
Rise Time.
Turn-Off Delay Time

td(olf)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Og

ALL

Gate-Source Charge

Ogs

ALL

Gate-Drain ("MUler") Charge

Ogd

ALL

.Fall Time

Vos=Max. Rating. Vos=OV

"A Vos = Max. RatingXO.8. Vos=OV. Tc= 125°C
A

ALL

Input Capacitance

nA Vos=-20V Vos=O
"A

-

Static Drain-Source On-State
ROS(on)
Resistance (2)

Output Capacitance

Test Conditions

Max

I)

max .•

Vos= 1 OV

Vos>IO(on)XROS(on) max. lo=3.0A

1100 1800

pF

170 .350

pF Vos=OV. Vos=25V. f= 1.0MHz

60

150

pF

-

60

ns

150 • ns
200

ns

120

ns

40

nC

15

nC

25

nC

K/W

II

Voo=0.5BVoss. lo=3.0A. Zo=4. 7"
(MOSFET switching times are essentially
independent of operating temperature.)

Vos= 1OV. lo=7.5A. Vos=0.8 Max.
Rating (Gate charge is essentially independent
of operating temperature.) .

THERMAL RESISTANCE
t Junction-to-Case

RthJC

ALL

ICase-to-Sink

RthcS

ALL

RthJA

ALL

!Junction-to-Ambient

-

-

1.0

0.1

-

-

80

KfW Mounting surface flat. smooth. and,greased
K/W Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol

Type

Min

Typ

Max

Units

Is

AC'L

-

-

6.0

A

Pulse Source Current
(Body Diode) 1

ISM

ALL

-

24.0

A

Diode Forward Voltage 2

VSD

ALL

1.3

1.5

V

Tc=2SoC. Is=6A. Vos=OV

Reverse Recovery TIme

t"

ALL

-

800

-

ns

TJ=150°C. IF=6.0A: dIF/dt;"100Al"s

Characteristic
Continuous Source Current
(Body Diode)

Teat Conditions

ModfodMOSF£T-"
showing the Integral
reverse P-N junction rectifier

I ~

I

0

s .

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300"s. Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

;349,

N-CHANNEL
POWER MOSFETS

SSH6N55/6N60
2

5

r- ~;;=7V

,

0

I--

t;j~Ulse Test

BO,..cs Pulse Test

VGS ..

8

U1

VGS 65V

lv-

IE

VOS>lll(QnlXAoslClnI max

2

I--

I

TJ -125 c C
T =25°b
TJ --5 'C

.,
9

e

Vas -5.5V

4

VGs=15~

2

=

J

TJ ""25°C

ltv V ,=-t

VGSIa~ 5V

T

~W
4

VG5=4V

50
100
150
200
250
Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V,T =125°C

j

300

0

2

6

,

J

VGS'""tlV

/.

-~

r· , I,lL

-r
L

1'.

11111111

I

1\

'oo,.s

5

)

,

2

/

o~

Vos=5V

/

1=
I--

V

vas "",lsv

o

14

f--SSH6N60-

vGS""'s 5V

V

2

12

I

BY ADSlorll

11

o

~~~~~~~:'~:

11111111

-:-r-n'

2

I;:

4

I

~_SSH6N6a

~V

e

10

Typical Transfer Characteristics

10

......,... .......... ,,,... ,

B

VOS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

8

5' C

1/

4
8
12
16
VOS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

o. 1
20

Typical Saturation Characteristics

To_25°
TJ ""1 50 0 e MAX.

'Om

R..,- 1.aKfW
SINGLE PULSE

,oOms
SSH6N60

2

VG5-4V

'ms
1111

1.0

2

SSHiNr'

II Illl

lIT

5
10
20
50 10J 200 500
VOs. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

0~

~;iII

2~-

,

:iI!'

o~o.

NOTES

·IfLrr

=

c.!l.-

p,~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

5 ::.tl-

1. Duty Factor. O......!.!...

I,.

2. Per Unit Base-Rvwo"'" a
3. T.wrTc=POMZwuc (tl

2

1
10"

..

.,

.,

5
10
2
5
10-,
2
5
10
11. SQUARE WAVE PULSE DURATION (SECONDS)

I 111111'

Deg

erw.

I I I I I II
10

Maximum Effective Transient Therma'. '.mpedance Junction- to-Case Vs. Pulse Duration

eX SAMSUNG SEMICONDUCTOR

350

N-CHANNEL
POWER MOSFETS

SSH6N5516N60
10

10

=

5

T,=J•.C

-

I-- ~

~
/ ' f.::: ...-

'"'T:'=125°C

~

r

/ V/
1,1/

2
Vos>lo!.onIXAOSlonl ....
80,..8 Pulse Test

0

11

5

r-- r
r-- F

TJ ~50°C
Tr 2'.C

1

2
1

4

8
12
16
10. DRAIN CURRENT (AMPERES)

1

20

~

Q

::liS'1.05

......V

Ww
ffi~

w'"

V

f-'

v

0:0:

V

V

5

./

0.95

/'

a

V

~

.......
0.85

I

II

0

j....-

V

o:E

~

4

2. 5

1.15

~~

3

Typical Source-Drain Diode Forward Voltage

1.25

~

2

VOD. SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Typical Transconductance Vs. Drain Currant

g

TJ =150°C

r

5

r
2

Tr25°

a

I.;:: v:::V

4

-

L

V

lL

V

V
Vas iOV
ID =3A

5

0.75

o

40

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

a

a

-40

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

160

Normalized On-Resistance Vs. Temperature

300a

5

V~=O;J

f=1 MHz

2.400

.l .J

CISS=CgS+Cgd, Cds SHORTEO-

c,..=c"

I

I

0

COSS=Cds+~:'~gd - I - -

1.80a

=Cds+Cgd

\

\

60

\\,

a

c,..

0

..L.

~

~~

W

10=75A

5
Coos

SAMSUNG SEMICONDUCTOR

/

1/

"'"
10
20
30
40
Vos. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

50

Typical Capacitance Vs. Drain to Source Voltage

c8

Vos=300V
Vos=480V

"

1.20a

Vos"'120V

15

20

40

60

a,. TOTAL GATE CHARGE (nC)

80

100

Typical Gate Charge Vs. Gate To-Source Voltage

351

N-CHANNEL
POWER MOSFET$

~SH6N55/6N60 .

f--

I

~FI:~~~~~ o,.slouRA11ON

I I
'/vas-

INmAL TJ -25°C

(HEATNG EFFEC:r OF 2.0,.&
PULSE IS MIIIIMAl)

Vass<1OV

;
2

V

/

10

/
2OV

W

61' .........

l/

I'-- ..........

4

SSH6N60

.......

r"

~~

1

"~

,

r\.

.0

10

15

20

25

ID. DRAIN CURRENT (AMPERES)

140

50

75

100

125

Maximum Drain

C~rrent

150

Va. Case Temperatura

I ,I

1

or-- b.

'" r\.

, r\..

'I\,

0

'" r\.'\

0

0

o

25

TA. AMBIENT TEMPERATURE (OC)

Typical On-fleslstanca Vs. Drain Current

160

0

20

40

60

60

100

~

120

TA. AMBIENT TEMPERATURE 1°C)

,

"

140

160

Power Va. Tamperature Derating Curva,

.c8

SAMSUNG SEMICONDUCTOR

.352

N-CHANNEL
POWER MOSFETS

SSH6N70
FEATURES
•
•
•
•
•
•
•
•
•

Low RoS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysillcon gate cell structure
Low, input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3P package

TO-3P

PRODUCT SUMMARY
Part Number
SSH6N7.0

MAXIMUM RATINGS
Characteristic

Symbol

SSH6N70

Drain-Source Voltage (1)

Voss

700

Vdc .

Drain-Gate Voltage (RGS=1.0MO)(1)

VDGR

700

Vdc

VGS

±20

Vdc

10

6.0

Adc

Gate-Source Voltage
Continuous Drain· Current Tc=25°C

--

Continuous Drain Current Tc=100°C

Unit

10

4.0

Adc

Drain Current-Pulsed (3)

10M

24

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

150
1.2

Watts
W/oC

TJ. Tstg

-55 to 150

°C

lL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widthE;300",s. Duty CycleE;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

353

N-CHANNEL
POWER MOSFETS.

SSH6N70
ELECTRICAL CHARACTERISTICS
. Characteristic

':,

Symbol

Type

M.i"

(Tc=25°C unless otherwise specified)
Typ

Max

Test Conditions

Units

VGS",OV

Drain-Source Breakdown
Voltage

BVoss

Gate Threshold Voltage

VGS(th)

ALL

2.0

-

4.5

V

Gate-Source Leakage Forward

IGSS

All,

100

nA

Gate-Source Leakage Reverse

IGSS

ALL

-

-100

nA

VGs=-20V

250

"A

Vos=Max. Rating, VGs=OV

1000

"A

Vos"'Max. RatingxO.8, VGS'<'OVi l"c=125°C

-

A

Vos>IO(on)XROS(on) max., VGS= 1

1.4

0

VGS= 1

0

Vos>IO(on)XROS(on) max, 10=3.0A

ALL

700

-

-'

V

-

ALL

6.0

-

Static Drain-Source On-State
ROS(on)
Resistance (2)

ALL

-

1.0

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current .(2)

10(on)

ALL
'\

-

10=250"A
Vos=VGS, 10=250"A
VGs=20V

Forward Transconductance (2)

gf.

ALL

5.0

7.0

Input Capacitance

CiSS

ALL

2300

2800

pF

Ollp"ICII!""r.illlnr.",

Co:;:;

'ALL

200

250

.... .=
""

Reverse Transfer CapaCitance

C•••

ALL

50

100

pF

Turn-On Delay Time

Ic:t(on)

ALL

t.

ALL

Ic:t(off)

ALL

t(

ALL

-

Total Gate Charge
(Gate'Source Plus Gate-DraJn)

Og

ALL

Gate-sOurce Charge

Ogs

ALL

Gate-Drain ("Miller") Charge .

Ogd

ALL

Rise Time.
Turn-Off Delay Time
Fa/I Til)1e

-

\I ___ n\l

90

. ns

200

ns

450

ns

150

ns

60

nC

-

-

-

0.1

-

-

80.0

20

oil,

~"

oil

10= 3.0A

\ / ___ '''H::\I

·uo

'VV,

6 ; _ ..

" ' • • I.~

1 - I.VIVlnL

Voo=0. 5 BVoss, 10"'3.0A, 20=4·.70.
(MOSFET switching. times are essentially
independent of operating temperature.

r

VGS"'10V, 10=7.5A, Vos"'0.8 Max.
Rating (Gate charge is essentially independent
nC
of operating temperature.)
nC

-

40

-

0.83 K/W

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-te-Sink

Rthcs

ALL

Junction-to-Ambient

RthJA

ALL

K/W Mounting surface flat. smooth, and greased
K/W Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current

Is

ALL

Pulse Source Current
(Body Diode) (3)

ISM

ALL

Diode Forward Voltage (2)

VsiJ

ALL

In

ALL

I(Body Diode)

Reverse Recovery Tfn:1e

-

800

6.0

A

24.0

A

1.5

V

-

ns

Modified .MOSFET symbol
showing the integral
reverse P-N junction rectifier,

SAMSUNG SEMICONDUCTOR

G

-:

s

Tc"25°C, Is"'6.0A. VGs=OV
TJ-150°C, IF=6.0A, dlF/dt- 100A/,..s

Notes: (1) TJ=25°C to 150·C
'.(2) Pulse ~est: Pulse widtM'300"s, Duty Cycleta:O!IlXADSlanl ....

VI
V

~

,,9

eo,..a Pulse Test

h r/

....

.

0

v..~,ov k
L~_.v

l"- t--

5
'0
20
50 100 200
500
Vos, DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

oc

II

Maximum Safe Operating Area

I
ffi

I

i~

01~~~ilil~~~~~~~~~!!~~ilili!!!~~~!!~~~~fil!~I!"!~~~I!!I1
"'"

IU::> 0.5

0"05

t$~;;~

0-0.2

~~

0.2

....

~ 1 0 .0

(~ ~

1

,

IIml!!!-Wmll

~-;20'T;~~J)!l.IJ.;;;;:H=##~**;;;f-FFtHtr-'EI-~-t:tli~rllllt1111t1-NNOTES
i

~S!·lr
c

~!,o.
IE~
.. C

,

r-

~

Ti"m,'MPjOAi

SINGLE PULSE (TRANSIENT

CE1 ,

,++H+t-f--l--+-l-+t+trl-t-t-

lJnU
r
~

L

'.-i" ----ln·"
I

1 Duty Factor D=..!!..

"

H'-HII-H+H+f-+iH-+H+lltllll+-It-+-t-I++
It-tltt--H-++tiii-tt--t-r-~1 ~~~;'~~~!U~08~ ~Ic;~
O.O~0~~.l-L-ll~~,~~~.-L~-L~5~u+"0~"~~2-J~~5~~,~0~·.-L~2--~~5~~,ob.,~~.2~~~~~~~~~~~'0

'0.0

11. SQUARE WAVE PULSE. DURATION (SECONDS)

Maximum Effective 'transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

c8

SAMSUNG SEMICONDUCTOR

355

N-CHANNEL
POWER MOSFETS·

SSH6N70
20

10

80jAs PUlse Test

!

TJ -

~

~V

55"0_

,

0

T,

5

125"0

2

~/

0

l(/

5

I

0

lL:

2

T~=25.J-

~ L i""

8

/

TJ-150"C

-

~

2

TJ-25-"C

5

..J

61-- t-Vos>lotanIXRoo.onl ....

o.1
12
16
8
10. DRAIN CURRENT (AMPERES)

20

o

~
z

5

~

~Q 1.05

Ww

II:N

L

:~

<.>:1

11:11:

~~

0.95",.,

./

V

.... V

I-""'"

1

I

2

3

4

5

I

....... I---

V
./

5

V

./

0

V

V

V

,,/
"...

~

0.85

o

40

.80

120

0
40
80
120
TJ. JUNCTION TEMPERATURE (OC)

IU

Breakdown Voltage Vs. Temperaturll

4,000

5

VIiS~O

0

id!

I

:::::Cds+Cgd

\

$

c..

I

§

~1,60 0
<.>

z

~
.e

1

800 ' \

,

~ ~ rI-

INITIAL TJ =25"C (HEATING

EFFECT OF 2 Of,Is PULSE IS MINIMAL)

Coss_Cds+ CgsCgd
Cgs+Cgd

~2,40 0

Rlonl ME~RE~ WITH1CURRJNT PU~E OF1

r- 2 0fAS DURATION

~:~+c~. Cds jORTED

1\

16o

Normalized On,Rasistance Vs. Temperature

f 1 MHz

i

-]-

0

160

TJ. JUNCTION TEMPERATURE (OC)

3,200

V$=10V

5

5

6,

IIIIIIIIII

~

U

5 C
'

Typical Source-Drain Dioda Forward Voltage

I I I I I I II.. I I

w

,

,

TJ ",,150"C

T'I

Vso. SOURCE·TD-DRAIN VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

'"

r-

I-2~

15

0

~~

/. ~

W

5

L

COBS

c...

10
20
30
40
VDS. DRAIN·Te-SOURCE VOLTAGE (VOLTS)

A~

Vos=t40V
Vos""35OV
Vos=560V SSH6N70

50

Typical Capacitance Vs. Drain to Source Voltage
.
I

0

V

1_='1 5A

28

56

84

112

140

Q •• TOTAL GATE CHARGE (nC)

Typical Gate Charge Vs. Gata-To-Sourca Voltage

356

N-CHANNEL

SSH6N70
r--

POWER MOSFETS
10

RoscJ, MEJRED !ITH ~!RAENJ PULSJ OF
2

O~

DURAnON INITIAL TJ'=25°C (HEATING

EFFECT OF 2 Of.lS PULSE IS MINIMAll

4

6

~

Vos=10V

~ ~-20V

~~

1

o

6

8

10

__

r-- ::---4

-

~SH6N70

"'-

"\

2

12

14

16

18

20

0 25

50

10. DRAIN CURRENT (AMPERES)

Typical On-fleslstance Vs. Drain Current

,

~
Maximum

75

100

Te. CASE TEMPERATURE
D~ain Current Vs. Case

125

150

('cr
Temperature

160

140

r-- K

~

,

II

"\
"

r\.

'\

,'\

0

f\

0

I\.

0

o

l\.
20

40

60

80

100

120

140

160

To. CASE TEMPERATURE ('C)

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

357

N-CHANNEL
POWER MOSFETS

,.SSH8N55/8N60
FEATURES
•
•
•
•
•
•
.•
•
•

Low ROS(on) at hlg h voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Exten'ded safe operating area
Improved high temperature reliability
rQ-3P package

TO-3P

PRODUCT SUMMARY
Part Number

VDS

SSH8N55

550V

..... _

_ ...... t.

...... a ..... _

ovuv

..;)\)nOI'lOU

RDS(on)

. ID

1.00

8A

nnn

--

01\

I

I

I

I

MAXIMUM RATINGS
Symbol

SSH8N55

SSH8N60

Unit

Drain-Source Voltage (1)

Voss

550

600

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOOR

550

600

Vdc

Gate-Source Voltage

VGS

Characteristic

±20

Vdc

Continuous Drain Qurr~nt Tc=25°C

10

8.0

8.0

Continuous Drain Current Tc = 1 00 ° C

10

5.0

5.0

Adc

Orain Current-Pulsed (3)

10M

32

32

Mc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

150
1.2

Watts

W/oC

TJ, Tstg

-55 to 150

°c

TL

300

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from ··case for 5 seconds

Adc

' .

'·C

Notes': (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300"s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

. c8SAMSUNG SEMICONDUCTOR

358

N-CHANNEL
POWER MOSFETS

SSH8N5518N60
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

(Tc=25°C unless otherwise specified)

Min Typ

lOrain-Source Breakdown
Voltage

SSH8N55 550
BVoss
SSH8N60 600

Gate Threshold Voltage

VGS(th)

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

loss

ALL

Zero Gate Voltage
Drain Current

-

-

ALL

B.O

Static Drain-Source On-State
Ros(o~)
Resistance
(2)

ALL

-

10(on)

4.5

Units
V

Test Conditions
VGs=OV
10= 250iJA

V Vos=VGS, 10=250"A

100

nA

VGs=20V

-100

nA

VGs=-20V

250

"A

Vos=Max. Rating, VGs=OV

---

.-

I--- I---

-

On-State Drain-Source
Current (2)

Max

1000

"A Vos=Max. RatingxO.B, VGs=OV, Tc=125°C

-

A

0.7

1.0

n

VGs=10V, 10=4.0A

-

lJ

Vos>lo(on) X ROS(on) max. lo=4.0A

Vos>IO(on)XROS(on) max., VGS= 1 OV
---;--

Forward Transconductance (2)

gfs

ALi..

5.0

5.6

Input Capacitance

Ciss

ALL

2600 3000

pF

Output Capacitance

-

400

600

pF VGs=OV, Vos=25V, f=1.0MHz

130

200

pF

Coss

ALL

Reverse Transfer Capacitance

Cros

ALL

Turn-On Delay Time

td(on)

ALL

t,-

ALL

td(off)

ALL

tf

ALL

Qg

ALL

Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge

Qga

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

--

I

-

90

ns

-

200

ns

Voo=0.5BVoss, 10=4.0A,,zo=4.7Q

-

450

ns

-

(MOSFET switching times are essentially
independent of operating temperature)

150

ns

120

nC

0.B3

40

BO

VGs=10V,. 10=10.0A, Vos=O.B Max.
Rating (Gate charge is essentially independent
nC of operating temperature.)
nC

THERMAL RESISTANCE
IJunction-to-Case

- - c--.
ALL
-

RthJC

ALL

-

ICase-to-Sink

RthcS

ALL

0.1

-.

IJunction-to-Ambient

RthJA

-

BO.O

K/W
K/W Mounting surface flat, smooth, and greased
K/W Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
I?Ontinuous Source Current
(Body Diode)

Symbol

Type

Is

ALL

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vso

ALL

trr

ALL

Reverse Recovery Time

Min Typ

ALL

-

-

BOO

Max

Units

B.O

A

32.0

A

1.5

V

-

ns

_MOSFET_

Test Conditions

showing the integral
reverse P-N iunction rectifier

~
S-

G

--

Tc=25°C, Is=B.OA, VGs=OV
TJ=150·C, IF=B.OA, dlF/dt= 1 00A/1iB

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width';;300"s, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

.c8

SAMSUNG SEMICONDUCTOR

359

N-CHANNEL

SSH8N5518N60

POWER MOSFEtS
: j".

24

..
f
...

Vas-l0V~

III

20

in
a:

Vos=~V

10

I
~PulseTest

vas J7V f--

~~:~~:l

8

1

16

II

:Ii

$

6

Z

a:
a:

12

:::>

I

c

'L

"z
2i

Vas=6V

4

J-TJ -126°C
T}"'25 G C

.9
VGS -5V""""

'--T,L- WC

-

I
.M

VGS -4V

o

20

40

60

80

100

120

0

15
3
4.5
6
7.5
9
Vas. GATE-To-5OURCE VOLTAGE (VOLTS)

Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

1

I

I

80j.1S Pulse Test

l/V'

V.,_RV

.LV

i

4

,L

2

I IIIII!::

1 III, 1111"

~

~

i

(

I 11111111

r:~~~~O:RI~ ~~,,~A

, ,

t-SSH8~O

VGS -55V

~

1'.

ob.LL

/

,

'I"l

10

ms

ffi

V~-5V-

~

I

5

/

z

C·1.0

2i

.9

Tc s2J)C

~

t=::

,b~;

~

TJ -150°C MAX
~ 083KJW

lOOms

SINGLE PULSE

51--

V -45V

2

IL
o

Typical Transfer Characteristics

10

I I

10

I
I

Vas -4V

6,
8
2
4
Vos. DRAIN-To-SOURCE VOLTAGE (VOLTS)

SSHBN60

DC

SSH8N56

III

1

10

1.0

Typical Saturation Characteristics

2

5
10
20
50
100 200
500
VOS, ORAIN-TO-SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

2
0
5

0""'05

0=0.2

2
0-0

1
5

i

-~

0=0.05

-

l~

NOTES

msL
~,~
,

o-QQ;!
0-001

,.....

~

2

SINGLE PULSE (mANSIENT

Triiill'MjOjCEl1· I

1 Duty Factor D=..!!..
2

Per Unit Ba&e=RthJC""O.83 Deg eIW.
.

3. T..",Tc=Pwz.....c (t)

0.0 1
10-

IIIII

10-'

Maximum Effective

c8

II

-.

5
1O~
2
5
10
2
5
10-,
". SQUARE WAVE PULSE DURATION (SECONDS)
Tr~nsient Thermal Impedance Junctio .... to-Case

SAMSUNG SEMICONDUCTOR

I I I 1111' ,I I I 111'1
2

1

Vs•.Pulse Duration

2

5

10

N-CHANNEL
POWER MOSFETS

SSH8N55/8N60

10

8~... J.T..d

I

........: t::::- I--

6

I

/

~
TJ=125°C~

......

I-~ :.,.....- ~

T.I'"'25°C

1:1': V

4

t

10'EDrmll
"
10,,_ _
TJ""150°C

f--VOS>IDIonIXRO&O"I ....

~/

hV
1/

2

I(
0

2

4
6
ID. DRAIN CURRENT (AMPERES)

a

10

01~0~U-~1~~~2--~~3~~~~~~5--~~6
VSD. SOURCE·TO-DRAIN VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

1

Typical Source-Drain Diode Forward Voltage

25

5

5

.,;~

5

5

V

i-"""

V

V
L

5

./ V

V

./

I

0

[.....-0' i-'"

V
./

V

5

k"

V
VGS -1OV
lo""4A

07 5

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

-40

160

o

o

40

40
120
60
TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

4.00

3,20

0

25

L-~J

\
1

o \

1=1 MHz
CISS=CgS+Cgd, Cds SHORTED .
C... ~Cgd
Coss""Cds+ CgsCgd
Ggs+Cgd

I

\

I

0

=Cds+Cgd
C. .

i

5

[
U

'soo

Vos-120V
Vos-300v
Vos=4BOV

~~ ~

~V

av

0

u

~\

h ~

\~
.......

5
sa

I
50

Typical Capacitance Vs. Drain to Source VoHage

SAMSUNG SEMICONDUCTOR

ie-lOA

/

C...

10
20
30
40
Vos. DRAIN-Ta-SOURCE VOLTAGE (VOLTS)

c8

160

Normalized On-Reslstance Vs. Temperature

o

28

56
84
112
Qg. TOTAL GATE CHARGE (nC)

140

Typical Gate Charge Vs. Gat.To-Source Voltage

361

N-CHANNEL
POWER MOSFE;t;S,

. !fs~NS5/8N80
2.0

i

§
~

i

10

"""~

puuk

LITH

",• .luRED
JURJr
OF
2.0/iB DURATION. INITIAL TJ-25°C. (HEATING
EFFECT OF 2.0,.. PULSE ,IS "'INIMAL) I
.

~... lOV.Y"
~.2

z

~

:::>

0

e
~

0

J

V

1.6

0

.

I

0.6

-

~~

..& ~

/

/

/

.".,V...2OV
k":
f-'

..............

6

........

.........

......

~

SSH8NSOI

.........
4

r-...

'\.
"

0.4

10

20

30

10, DRAIN CURRENT (AMPERES)

Typical On-Reslstanca Va. Drain Current

1601=l

'

,

V'

2

o

\

0 25

50

75

100'

125

1 0

T c, CASE TEMPERATURE (OC)'

. Maximum Drain Current Vs. Case Temperature

L

"'I\.

140

0

'\

0

\..

'\

0

'\

0
0

~
'\.

0
0

\

8

20

40

60

80

100

120

i\. 160

140

To, CASE TEMPERATURE (OC)

Power Va. Temperature Derating Curve

c8
•

I

C

..

)

SAMSUNG SEMICONDUCTOR

. '362

N-CHANNEL
POWER MOSFETS

SSP3N70
FEATURES
•
•
•
•
•
•
•
•
•

Low RoS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO-220

PRODUCT SUMMARY
Part Number

ID

SSP3N70

3A

I
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)

Symbol

SSP3N70

Unit

Voss

700

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VDGR

700

Vdc

Gate-Source Voltage

VGS

±20

Vdc

10

3

Adc
Adc
Adc

I

Continuous Drain Current Tc=25°C

10

2,

Drain· Current-Pulsed (3)

10M

12

Gate Current-Pulsed

IGIII

±1.5

Adc

Po

75
0.6

Watts
W/oC

TJ. Tstg

-55 to 150

°C

TL

300

'C

Continuous Drain Current Tc= 1 00 ° C

Total Power Dissipation @
Derate above 25°C

Tc=25~C

Operating and Storage
Junction Temperature Range
MaXimum Lead Temp. for Soldering
Purposes. 1/8/1 from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300j.lS. Outy Cycle<2%
(3) I;lepetitive rating: Pulse width limited by max. junction temperature

ciS

HI

SAMSUNG SEMICONDUCTOR

N-CHANNEL
POWER MOSFETS

SSP3N70
ELECTRICAL CHARACTERISTICS
CharacteriStic

Symbol

Type

Min

Drain-Source Breakdown
Voltage

BVoss

ALL

700

Gate Threshold Voltage

VGS(th)

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

-

Gate-Source Leakage Reverse

IGSS

ALL

-

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current (2)

lo(on)

ALL

3.0

ROS(on)

ALL

-

Static Drain-Source On-State
Resistance' (2)

ALL

(Tc=25°C unless otherwise specified)
Typ

-

Max

-

Units

V

4.5

V

Vos=VGs. 10=250,..A

100

nA

VGs=20V

-

-100

nA

VGs=-20V

-

A

Vos>IO(on)XROS(on) max .• VGS= 1OV

4.8

5.0

0

VGs= 10V. 10=1.5A
Vos>IO(on)XROS(on) max .• 10=1.5A

-

250
1000

,..A Vos=Max. Rating. VGs=OV

,..A Vos=Max. RatingXO.8. Voo=OV. Tc=125°C

Forward Transconductance (2)

gls

ALL

1.5

2.5

-

U

'Input Capacitance

C;ss

ALL

-

730

900

pF

~

voss

ALL·

Reverse Transfer Capacitance

C,ss

ALL

Turn-On Delay Time

td(On)

ALL

t,

ALL

-

70

O:..:tp~t

Cc.pacitance
-

.

75

20

25'

pF

40

ns

95

ns

Id(olt)

ALL

tl

ALL

Qg

ALL

Gate-Source Charge

Qgs

ALL

-

Gate-Drain ("Miller") Charge

Qgd

ALL

-

-

Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gale-Source Plus Gate-Drain)

'

pF YGs=Ov. Yos=2ov. t=l.UMHz

-

Rise Time

Test Conditions

VGs=OV
10=250,..A

150
60
25
10
15

.

Voo=0.5BVosS. 10= 1 .5A.
Zo=150.
' (MOSFET switching times are essentially
ns independent of operating temperature.)
ns
nC IVGs=10V. 10=4.0A. Vos=0.8 Max.
I Raling (Gale charge is essentially iRdependenl
.
nC I
of operating temperature.)
nC

, THERMAL RESISTANCE
Junclion-Io-Case

RtIlJC

ALL

Case-to-Sink

RthcS

ALL

Junction-Io-Ambienl

RthJA

ALL

~

-

1.67

K/W

1.0

-

K/W Mounling surface flal. smooth. and greased

-,

80

K/W Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Currenl
(Body Diode)

I .~ 1

Is

ALL

-

-

,3.0

A

Pulse ,Source Current
(Body Diode) (3)

ISM

ALL

A

showing Ihe integral
, ' , , "Q
reverse P-N junction rectifier
.

VSD

ALL

-

12.0

~e Forward Voltage(2)

1.5

V

Tc=25°C. Is=3.0A. Voo=OV

I"

ALL

-

-

ns

TJ=150°C. IF=3.0A. dIF/dt=100Al,..s

Reverse Recovery Time

500

_

.. ..,.FEr;,m"

"

5,

Notes: (1) TJ=25°C 10 150°C
.
(2) Pulse lest: Pulse width"300,..s. Duty Cycle";2%'
(3) Rel>elitive raling: Pulse width limited by max. junction temperature

c8

SAMSUNG

SEMICON~UcrOR

364

N-CHANNEL
POWER ·MOSFETS

SSP3N70·
6

5

V"-10VJ/V~_7J

V

5

/11

SO¢! Pulse Test

Jev

V

nV-

-

J
II

80,..s Pulse Tesl

VOS>ID(,.,!XRoa.",,1 ....

60

/l

4

I(f

r

5
Vas .. S 5V

3

J

~

I

2

/I
ill

0

Vas~5V
5

1

rJI
V
.lli

TJ''''125°

TJ=25OC~~

Vas.145V

TJ'''''-55°C

V",=1 4V

0

50

100

150

200

250

300

8o,.!P""~'"

~ ::--,VGS-jVVGS -1QV

10 2

5
OPERATION IN THIS AREA

VGS=7V

3

H

V
~

IS UMITED BY ROSIen]

2
0

VGS=J 5V

-

r-~-irr

10",

Ves- 5V

Ii'

. III

,

/

2

V

1

- ...

51-- SSP3~7b

jP'
2

5

4

Typical Transfer Characteristics

~ F-r

I!

3

VGS. GATE-TO-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

5

2

1

Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

l 1J
lms

Te 25°C
Tr150°C MAX
RthJC -1 67 KIW

Vas.} 5V

J

V

/

I

VGS=.JV
10
20
30
40
Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Typical Saturation Characteristics

50

0.1

iitGLE P,LSi

IIII

/

tJ"U

i.....

I

~Of

SSP3rO

5
10
20
50
100 200 500
VDS. DRAIN-To-SOURCE VOLTAGE (VOLTS)

. Maximum Safe Operating Area

I

2

10

5

-0.5

~I::ii jiiiii

0-0.2

2
0"01

1

,;rob.

......
-~

~

NOTES

I::::
~

5~-OO1

SINGLE PULSE (TRANSIENT

THERMAl IMPEDANCE)

~

IrlJL
P~

0""002

.

f:::!.------j

1 Duty Factor D=-'.!.-

t.
2 Per Umt Base""Rn.Jc=1 67 Oeg CLW
3 TJ_Tc=PDMZu...c It)

2
1
10

~

-.

5
10
2
5
102
5
10-,
11. SOUARE WAVE PULSE DURA nON (SECONDS)

I UUlli 111JJJl
10

Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration

c8

SAMSUNG SEMICONDUCTOR

365

N-CHANNEL
POWER MOSFETS

SSP3N70
,

10

10

~~~~R:a:J

I
"'e ,

"'

6

TJ "-55°C

,.,...

u

5z

~
t

4

-:....

/

"...,.

,%V

c

,

I!:

I~

T~-25·d-

~

IL

2
TJ=125°C-

0

I----

.Tr 15O • C

/'

I--TJ =25°C

o. 1
2

3

4

5

6

7

8

1

10

ID. DRAIN CURRENT (AMPERES)

~

::ea 1.05
i~

V "

we

U1l

a: a:

5!il
0.951.0'"
IQ-

I

0

. / i-'"

Z

V

I-"'"

V
5

V

V
./

./

o

i*

I

4

I II

125

.~

3

Typical Source-Drain Diode Forward Voltage

~ 11I I I I I I I I I
1.15

2

VOD. SOURCE.TO.DRAIN VOLTAGE (VOLTS)

Typical Transcounductance Vs. Drain Current

~

~

I

11

~
~

TJ "'15QoC

T -25°C

i---""

V

..... V

0.85
VG/i-'OV

10-1 SA'

0.75
-40

o

40
80
120
TJ. JUNCTION TEMPERATURE (OC)

160

-40

'Breakdown Voltage Vs. Temperature

0
40
80
120
TJo JUNCTION TEMPERATURE (OC)

160

Normalized On-Reslstance Vs. Temperature

25

1.500

Voo.lo
'-1 MHz

~::~:tjgd, Cdj SHORTED

0

1,20

w 90

!

0

Coss-Cda+ CgsCgd
Cgs+Cgd
=Cds+Cgd

\

5

o \

VO$=140V
Vos=350V
VDS~56OV

Ciss

600

30

V'

~

5

:-...

/

Coso
CISIi

10
20
30
40
"os. DRAltHO'SOURCE VOLTAGE (VOLTS)

50

Typical Capacitance Vs. Drain to Source Voltage

.c8

~V
~ 7'

0

0\\

o

b-.. ~

SAMSUNG SEMICONDUCTOR

o

if

1o-4A

8

16

24

ag• TOTAL GATE CHARGE (nC)

32

40

Typical Gata Charge Vs. Gat.To-Source Voltage

366

N-CHANNEL
POWER MOSFETS

SSP3N70
13

ROO~' MEluRED IWITH JUAREJ pude OF

/

2'O~ DURATION. INmAL TJ""25°C (HEATING
EFFECT OF 2.01lS PULSE IS MINIMAL)

J '/

VGS 10V

1

h

-

h ~GS=20V

~V

""'- r-..

AV

-

~

30

..... ~

1.5

r........ ........

v
~

3

4.5

6

75

10. DRAIN CURRENT (AMPERES)

;-....,..

""-

1

Typical On-Reslstance Vs. Drain Current

SSP3N70

..........

0 25

50

75
100
125
AMBIENT TEMPERATURE (OC)

\
150

Maximum Drain Current Vs. Case Temperature

80

1070

..

"" \.

'\

r-..

'\

'\
0
0
0

~

"

\.

20

40
60
80
100
120
Tc. CASE TEMPERATURE (OC)

140

160

Power Vs. Temoerature Derating Curve

=8

SAMSUNG SEMICONDUCTOR

367

N-CHANNEL

POWER .MOSFETS':

SSP4N5514N60
FEATURES

\,

•
•
•
•
•
•
•
•
•

Lower RoS(on)
Improved inductive ruggedness
Excellent high voltage stability
'Fast switching times
Rugged poiysilicon gate cell structure
.Lower input capacitance
.
·Extended safe operating area
Improved high temperature reliability
10-220 package

. TO-220

PRODUCT SUMMARY
Part Number

VDS

SSP4N55

550V

3.00

4A

600V

- II.:I.u

4A

,
~~P4N60

RDS(onl •

ID

,

,

I

I

1

I

MAXIMUM RATINGS
Symbol

SSP4N55

SSP4N60

Unit

Drain·Source Voltage (1)

Voss

550

600

Vdc

Drain-Gate Voltage (RGs=1.0MD'l(1)

VOOR

550

600

Vdc

Gate-Source Voltage

VGS

Characteristic

Continuous Drain Current Tc=25°C

10

Continuous Drain Current Tc=100°C

10M

Gate Cllrrent-Pulsed

IGM

Total Power Dissipation @ Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range

\

10

Drain Current-Pulsed (3)

Vdc

±20
4

4

Adc

2,5

2.5,

Adc

16

Adc

16
;

±1.5

Adc

Po

75
0.6

WattS
W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Maximum lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150°.C
(2) Pulse test: Pulse width";300",s. Duty Cycle..;2%
(3) Repetitive rating: Pulse width· limited by max, junction temperature

c8

SAMSUNG SEMICONDUCTOR

368

N-CHANNEL
POWER MOSFETS

SSP4N5514N60
ELECTRICAL CHARACTERISTICS'
Characteristic

Drain-Source Breakdown
Voltage

Symbol

BVoss

Type

ALL

Gate-Source Leakage Reverse

IGSS

ALL

loss

ALL

_._--

Zero Gate Voltage
Drain Current

ALL

-

On-State Drain-Source
Current (2)

10(on)

Min

SSP4N55 550
SSP4N60 600

Gate Threshold Voltage
VGS(th)
t---Gate-Source Leakage Forward IGSS

r-----

(Tc=25°C unless otherwise specified)

ALL

2.0

Typ

.-

- - - 1--- --- 4.0 -

Units

-

V

VGs=OV
lo=250,..A

4.5

V

Vos=VGS, 10=250,..A

100

nA

_.

-

-100
250

---

1000

.-

Static Drain-Source On-State
ROS(on)
Resistance (2)

ALL

Forward Transconductance (2)

gts

ALL

Input Capacitance

C.ss

ALL

Output Capacitance

Coss

ALL

C,ss

ALL

td(on)

ALL

t,

ALL

td(ofl)

ALL

tt

ALL

Qg

ALL

Gate-Source Charge

Qgs

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Reverse Transfer Capacitance
)----

Turn-On Delay Time
Rise Time
. Turn-'Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

-:-

2.0

+----

-

2.0
3.1

3.0

I-- r-

Test Conditions

Max

-

VGs=20V

--------------

.

----------------

nA VGs=-20V

--

----

Rating, VGs=OV
JAA Vos=Max.
-_._--..,..A Vos=Max. RatingXO.8, VGs=OV, T-c= 125°C
A Vos>IO(on)XROS(on) max., VGS= 1 OV
.----,--- 1-11

VGs=OV, 10=2.0A

(}

Vos>IO(on)X ROS(on) max. 10=2.0A
-

1720

900

pF

110

200

pF VGs=OV, Vos=25V, f=1.0MHz

40

60

pF

-

40

ns

95

ns

-

150

-

60

ns

25

nC

10
15

II

Voo=0.5BVoss, 10=2.0A, Zo=1511
(MOSFET switching times are essentially
ns independent of operating temperature.)

VGs=+10V, 10=+5.0A, Vos=0.8 Max.
Rating (Gate charge is essentially independent
nC
of operating temperature. )
nC

THERMAL RESISTANCE
Junction-to-Case
Case-to-Sink
Junction-to-Ambient

Rtf1JC
RthCS
RthJA

-

ALL
ALL
.ALL

-

1.67

1.0

-

-

80

K/W
K/W Mounting surface flat, smooth, and greased
Free Air Operation

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Type

Min

Typ

Max

Units

Is

All

-

-

4.0

A

Pulse Source Current
(Body Diode) (3}

ISM

All

A

Vso

ALL

-

16.0

Diode Forward Voltage (2)

-

tIT

All

-

600

Continuous Source Current
' (Body Diode)

Reverse Recovery ·Time

1.5

V

-

ns

Test Conditions

T~ J

showing
integral' " ' " '
_
.. the
MOOFET
,reverse P-N junction rectifier

_G_ _ ~

Tc=25°C"ls=4.0A, VGs=OV
TJ= 150°C, IF=8.0A, dlF/dt= 1 OON,..s

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widthE;;300,..s, Duty CycleE;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

SAMSUNG SEMICONDUcToR

369

N-CHANNEL
POWER MOSFETS

'SSP4N5514N60

,"

9. 6 V
GS""'QV

V

VGS-9V

0

aD¢! Pulse Test

I'
vas=lev

J

TJ =-55"0

I

3 2

.9

VGS=5V

r)=25°C

rfJ
I. ~/

TJ "-55"0

1. a

~5

VGS .... 45V

50

100

150

200

250

300

o

Vos. DRAIN·TO-SOURCE VOL TAGE (VOLTS)

1

aa1s Pulsl Test
6.4

u

Vos=7V-

f"'"

6

LERAnoN IN THIS AREA IS UtI.

I

i
l

Vas=6V

I~

10

VG$-S5V

~

I

~

20

30

40

I~!~I

I II III I

10ms

.

IIIIIII
5

·1

lOOms

::~:~'

10

20

50

100

200

500

Ves. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Ves. DRAIN-T0-50URCE VOLTAGE (VOLTS)

Typical saturation Characteristics

Maximum safe Operating Area

~11

1-

/'0 -

...

5

-.

l::::::1jjI'
I..-

D-O.

1

l00,s

SINGLE PULSE

0

2

""

Rn.,,; .... , 67 KIW

0.1

50.

!."E

~~~:~:;~c MAX

-

VGS "45V

10

.7'

1.0

V
0

-~

C::_~j!

0
BY'~;

.,'".

I'

Vo.s=5V

II

"

-SSP4N6o

~

1. 6

/1.

It'

-.

I

~V

3. 2

IIIIIIIIIIIIIIIIIIII~II

vGS=Jsv-

fL ,;r

I
R

10

~
~ .".-

Vas""'QV-

~~

4. a

Ii

i

4

Typical Transfer Characteristics

~'f'-

i[

!

3

,

a. 0

I

2

Vos. GATE-T0-50URCE VOLTAGE (VOLTS)

Typical Output Characteristics

''::

II
f.lJI

TJ "'125"0

.~

1

1. 6

4. a

z

TJ~25°C_

'I'

fs
o

VGsJ55V~

2

:~~:::e~: J.

6.4

~

8

'.L
'U

. TJ!'25 O C

vGS ...1e 5V i=

'L

4

8.0

vas"'iv- I -

_I-'

J:005

~

NOTES

!:::
,.-

5 ;:[';'001

~
POM

0-=0. 2

~

p,~

SINGLE PULSE (TRANSIENT
THERMAL IMPEDANCE)

1

Duty Factor. O-"!!"

1"
2. Per Unit Base-RII\JC-1.67 Deg. OIW
3 TJ~Tc=PDMZIhJC (I).

2
1
5

10~

5

.,

10.

2

5

.,
10.

2

5

,

'

I 1111111

I I

10-

I I III
10

11. SQUARE WAVE PULSE DURATION (SECONDS)

Maximum Effective Transient Thermal Impedance Junction· to-Case Vs. Pulse Duration

=8SAMSUNG SEMICONDUCTOR

370

N-:CHANNEL

SSP4N55/4N60

POWER MOSFETS

75

10

5

--

Ti=25~C

::.c. i--

TJ =1

i.,...--' ~

5

1/ V'

~

1/V

,

~

~

. / I-'"

Iv:. V

II.

TJ "'2 ·0

T,=

S'C

r--

-

5
2

5

VOS>ID!.mXR~.... _

at pur I
Jl8

2

r-

Test

4
6
8
10. DRAIN CURRENT (AMPERES)

10

o1
o

r--!J-150°C
TJ -=25°C

1

2

4

VSD. SOURCE·To-DRAIN VOLTAGE (VOLTS)

Typical TransconduClllnca Va. Drain Current

1.25

Typical Source-Drain Diode Forward Voltage

2. 5

1.1 5

i

V~

~s 1 a5

0

1.---" ~

wC
u:li

"" 0.95i--"'"
~~

./

V

V

5

V

,,~

'"::I

i~'

TJ -150·C

~

0

I--

.,.

1

/

o

2

./

./

r--

0.8 5

./

V

II

V

IL V

V
VGS-1QV

1o=2A

5

0] 5

o

40
80
120
TJ. JUNCTION TEMPERATURE ('C)

-40

180

0
-40

Breakdown Voltage Va. Temperature

0

40
80
120
TJ. JUNCTION TEMPERATURE ('C)

160

Normalized On-Resistance Vs. Temperature

5

2,000

v~Lo
f-1 MHz
CISS Cgs+Cgd. Cds SHOATED

1,600

I

I

Crss-Cgd
Coss=Cds+ CgsCgd
Cgs+Cgd
=Cds+Cgd

Vos=120V

5

Vos=300~~

0\

V~=480V

'l:: y-

\
0

o

c,..

~ '/
/L V

\

\

40
0\

5

"'"

.......

Coos

C...

10
20
30
40
VOS. DRAIN·TQ.SOURCE VOLTAGE (VOLTS)

50

Typical Capacitance Va. Drain to Source Voltage

c8

SAMSUNG SEMICONDUCTOR

L
'/
o

~V

8

16

le-5A

24

32

40

Q .. TOTAL GATE CHARGE (nC)

Typica.1 Gate Charge Vs.

Get.T~urce

Voltage

371

N-CHANNEL
POWER. MOSFETS

SSP4N55/4N60
10

If:z:

RDS(onl

MEASURED WITH

CURRENT PUlSE OF
2.0.- DURATION

2
w

~~:~N~~~~
~ 2 DI4
PULSE IS MINIMALl

u

z

r-- ,..-

~

-

r--- .....

ill
w

3

II:

Z
0

"0
........::

IS

--

I

rt"

o

4

6

10. DRAIN CURRENT (AMPERES)

50.

75

100

125

150

Te. CASE TEMPERATURE ('C)

Maximum Drain Current Vs. Case Temperature

.'\

50

....

40

15

30

'\

I'"I\.

~

cS

\

25

"I\.

60

1=

...0

o

1\

I I I

c

~

\

1

Typical On-Reslstance Vs. Drain Current

c

$SP4N60

\

10

8

::FK

,.

"-

VGS",,20V

II:

Z
0

"-

1---"'.

VGS=1ry

~
:c

!

r-...

. /V

~

II:

~

.....,.

,

20

\

I\.

CL

10

o

I\.
20

40

60

80

100

120

140

160

Te. CASE TEMPERATURE('Cr

Power Vs. Temperature Derating Curve

c8SAMSUNG SEMICONDUcrOR

~72

N-CHANNEL
POWER MOSFETS

SSP4N70
FEATURES
•
•
•
•
•
•
•
.'
•

Low RDS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate'cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO-220

PRODUCT SUMMARY

I
!

Part Number

Vos

ROS(on)

10

SSP4N70

700V

2.50

4.0A

•

MAXIMUM RATINGS
Characteristic
I-

Symbol

SSP4N70

Unit

Drain-Source Voltage (1)

Voss

700

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOOR

700

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Continuous Drain Current Tc=25°C

10

4.0

Adc

Continuous Drain Current Tc=100°C

10

2.5

Adc

Drain Current-Pulsed (3)

10M

16

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25 ° C

Po

125
1.0

Watts

W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

---

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300"s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

373

N-CHANNEL'
POWER MOSFETS
ELECTRICAL CHARACTERISTICS (T~=25°C
Characteristic

Symbol

Drain-Source Breakdown
Voltage

BVoss

Gate Threshold Voltage

Type

Min. Typ

unless otherwise specified)

Max

V

4,5

V

Vos=VGS, lo=2501lA

100

nA

-100

4,0

ALL

-

gf.

ALL

Input Capacitance

Ciss

AI-L

Ouipui Capacitance

t;oss'

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

td(on)

ALL

tr

ALL

td(off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Og

ALL

Gate-Source Charge

Ogs

ALL

Ogd

ALL

700

VGS(th)

ALL

2,0

IGSS

ALL

-

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

10(on)

ALL

Static Drain-Source On-State
Resistance (2)

ROS(on)

Forward Transconductance (2)

Gate-Source Leakage Forward

On-State Drain-Source
Current (2)

- -'---

-

Test Conditions

VGs=OV
10=2501lAA

-

ALL

Units

-

VGs=20V

nA VGs=-20V

250

IlA Vos=Max, Rating, VGs=OV

1000

IlA

-

A

Vos>IO(on)XRos(on) max" VGS= 1 OV

2,25

2,5

0

VGS= 1 OV, lo=2,OA

2,5

3,6

-

0

VOS>IO(on)XROS(on) max, 10=2,OA

-

1120 1800

VOS = Max, RatingXO,8, VGS'=OV, Tc=125°C

-----~

1---

Rise Time
Turn-Off Delay Time
Fall Time

Gate-Drain ("Miller") Charge

pF

190

200

pF

70

75

pF

-

60

VGs=OV, Vos=25V, f=1 ,0MHz

c---- -ns
Voo=0,5BVoss, 10';'2,OA, Zo = 4;-7 0,
(MOSFET switching times are eS$enti~ly
independent of operating temperature,)

150

ns

300

ns

130

ns

40

nC

15

nC

25

nC

-

1,0

K/W

1,0

-

K/W Mounting surface flat, smooth, 'and greased

80

K/W Free Air Operation

'.

VGs=10V, 10=5,OA, Vos=0,8 Max,
Rating (Gate charge is essentially independent
of operating temperature, )

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sirlk

Rthcs

ALL

Junction-to-Ambient

RthJA

ALL

-

-

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Continuous Source. Current
(Body Diode)

Symbol

Type

Min

Typ

Max

Units

Is

ALL

-

-

4,0

A

Mod_ MQSFET

A

showing the integral'
'. .
G,
reverse P-N junction rectifier

1.5,

V

Tc=25°C, Is=4,OA, VGS'=OV

-

ns

TJ=150°C, IF=4,OA, dlF/dt= 1OOAIIlS

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

Vso

ALL

trr

ALL

Reverse Recovery Time

ALL

-

600

16,0

Test Conditions

~b• . . . . ~.

I

"
S

Notes: (1) TJ=25°C to 150°C
.
(2) Pulse test: Pulse width.. 300IlS, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max, junction temperature

c8

SAMSUNG SEMICONDUCTO.R

374

N-CHANNEL

SSH4N70

POWER MOSFETS

2

t-- m.GS~7V
f-- J- vos· l ov

J

r--- r- 80" lu.. Te,\

1
I

Vos>Ic1anlXRos.oni .....

16
VGS=55V

1/
2

'VQ9~5V

Vas

J

L

45V

TJ=125 0 C

M

-r l/W

t-

TJ s=25°C

2

J

W

55OC

VGfJ4V to

50
100
150
200
250
VOS. DRAI ....TQ.SOURCE VOLTAGE (VOLTS)

..£p

30'0

1
2
3
4
5
6
V08. GATE-To-SOURCE VOLTAGE (VOLTS)

Typical Output Characteristics

10
80J,.s Pulse Test

8

~

~

~

2

10

~VGS=10V
~ t-

I'--

r-VG$=7V
Vas;=6V

5
OPERATION IN THIS AREA IS UMITED BY ADS! "

Vas=S.5V

2~eIlI~'7

,r

r--

VGJ5=5V

'.

~~

V

0

--'-

IL
J. . .

Typical Transfer Characteristics

100,..

SSP4N7Q

,,

~

'm,

II

Te 25°C

lOms

TJ=150°C MAX
Rtr.Jc""10KlW

Vos"'45V

;00

ISI'NGLE jU'1'E

If'
I

2

Vc;.s""4V

IT

/

III J1

o. 1
8
16
24
32
VDS. DRAI ....TQ.SOURCE VOL TAGE (VOLTS)

40

10

Typical Saturation Characteristics

2

I

I,l

SSP4N70

5
10
20
50 100 200 500
VDS. DRAI ....TO-SOURCE VOLTAGE (VOLTS)

lill

Maximum Safe Operating Area

2

ffi
~

~~

1.0

~: o.

51::0-

M~

... w

D=O

Hi ~ o. 2

~~
~

l

....

-n;'

~ ~ 0.05

0- .

,JJ.-D.

2

0.0 1

I::;:iIi
NOTES

""""

IILJL

0-0.

0:",

00

I""""

.... i-"

o. 1

::Ii ...

j;

,

I-

.... ,...

.

,

THERMAl IMPEDANCE)

.

-.

10

. ~----j
\.

SINGLE PUlSE (TRANSIENT

-.

10

Illlll
II IIII -,

1 Duty Factor.

o-...h..

1,.
2 Per Unit Base=RIhJC= 1.0 Deg
3 TJr.rTc·PDMl.tvc (I).

-.

5
10
2
5
10
2
5
10-,
11. SQUARE WAVE PULSE DURATION (SECONDS)

I 111111'

I I

elW

I I III
10

Maximum Effective Transiant Thermal Impedance Junction-to-Case Vs. Pulse Duration

c8

SAMSUNG SEMICONDUCTOR

375

N-CHANNEL

SSP4N70

POWER ItIIOSFE'fS

.

160

10

- f---10jlS ptlse Tell'
f

I
W

VOS>lo.onlXROSConl max

128

IJr
96

I

32

V

TJ=12IS0C

IV

r-01
8
12
16
10. DRAIN CURRENT (AMPERES)

1
2
.a
4
5
Vs•• SDURCE-TO.l)RAIN VOLTAGE (VOLTS)

20

115

.---

z

~c

.
:=16'105

..,..V

i~
....

~~09 5

"~
~

Typical Sourc_Draln Diode Forward Voltage

It IIIIIIII

I II I I I I

1

!!!

<>:1

v

TJ 1'50:[
TJ-r SOC

r----'

11/
Typical Transcounductance Vs. Drain Current

0:0:

TJJS00C

TJ =25°C

U~
4

~
g

r--..

Q

i{

1 25

~

TJ =-55 C

4

.g

TJ 25°C

'-

"..

I

V

~

/

V
/~

./

./

"..

/'

i

. /V

V

Vos=1OV
lo=2A

085

o

07 5
-40

0

40

80

120

160

-40

·0

TJ. JUNCTION TEMPERATURE ('C)

2000

40

80

120

160

TJ. JUNCTION TEMPERATURE ('C)

Breakdown Voltage Vs. Temperature

Normalized On-Resistance Vs. Temperature

25

..!.oo, M~ASUA~D WI~ CUA"i,NT "JLSE J"

20,llS DURATION INITIAl. TJ =25°C (HEAnNG-

~

EFFECT OF 2 O¢l PULSE IS MINIMAL)

1600

~

.......... r-

11.11200

I'" \
0

400

0

c8

..
"...
g
..

20

~

C1SS

15
Vos=140V

<>

I-- -Vos=350V ........

0:

:::>

!.."

1\

\

u

~

\

~.

.......

K
10

-r-

20

Vos=560V'j

10

r;

~

'(f

~

Coss

J,'/

....A

f

c,..

1/.
40

50

o

20

40

60

60

100

Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS)

a g• TOTAL GATE CHARGE InC)

Typical Capacitance Vs. Drain to Source Voltage

Typical Gate Charge Vs. Gat..To-Source Voltage

SAMSUNG SEMICONDUCTOR

.376

N-CHANNEL
POWER MOSFETS

SSP4N70
5.0

iii
:E

RDS/OIl) MEASURED WITH CURRENT PULSE OF
2 o,.s DURATION INITIAl TJ=25°C (HEATING

:I:

e
U
"'Z
~ill
"'

.

4.4 I--I"'""C OF 2 .. PU;BE IS MINIMA,

38

Z
0

"'
!

u
0

~

32

~
~

C 2.6

I!i

J

(

VGS""!OV- ~

..." V

... ....

~~
jP'"

........

..........

.......

t'-

I

VGS-2DV

SSP4N70

t'i'.

z

l/

~

~
~

.9

,

1

2.0
8

12.

16

20

ID. DRAIN CURRENT (AMPERES)

25

50

75

Te.

Typical On-Reslstance Vs. Drain Current

100

125

150

CASE TEMPERATURE .oC)

Maximum Drain Current Vs. Case Temperature

160

140

E

"'--

120

C

i!

~

"r\.

...
I= 80

I

..

60

Ii.

40

~

""

~

"" ~

"" ~

"

[\.

20

o

I

'"

100

20

40

60
80
100
120
To. CASE TEMPERATURE (OC)

"" ~
140

160

Power Vs. Temperature Derating Curve

c8

SAMSUNG SEMICONDUCTOR

377

N-CHANNEL'

SSP6NS5/6N60

POWER MOSFETS

FEATURES
•
•
•
•
•
•
•
•
•

Low .RDS(on) at high voltage
Improved Inductive ruggedness
Excellent high voltage stability
Fast switching·tlmes
Rugged polysillcon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability
TO-220 package

TO·220

PRODUCT SUMMARY
Part 'Number

Vos

SSP6N55

550V

1.80

6A

SSP6N60600V

1.80

6A

ROS(on)

l

10

I
MAXIMUM RATINGS
Characteristic

Symbol

SSP6N55

SSP6N60

Unit

Voss

550

600

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOGR

550

600

Vdc

Gate-Source Voltage

VGS

Drain-Source Voltage (1 )

±20

.. \ldc

Continuous Drain Current Tc=25°C

10

6.0

6.0

Adc

Continuous Drain Current Tc';' 1 00 ° C

10

4.0

4.0

p..dc

Drain Current-Pulsed (3)

10M

24

24

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

125
1.0

Watts

W/oC

TJ. Tstg

-55 to 150

°C

TL

300

DC·

Operating and Storage .
Junction Temperature Range
MaXimum Lead Temp. for Soldering
Purposes. 1/8/1 from case for 5 seconds

Notes: (1) TJ=25°C to 150°C
.
(2) Pulse test: Pulse width~300,..s. Duty Cycle~2%
. (3) Repetitive rating: Pulse width limited by max. junction temperature

ciS SAMSUNG SEMICONDUCTOR

'

378

N-CHANNEL
POWER MOSFETS

SSP6N5516N60
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

(Tc=25°C unless otherwise specified)

Min

Drain-Source Breakdown
Voltage

SSP6N55 550
BVoss
SSP6N60 600

Gate Threshold .,oltage

------'-

Test Conditions

Typ

Max

Units

-

-

V

VGs=OV
10= 250l'A
Vos=VGs. 10=2501'A

VGSlth)

ALL

2.0

-

4.5

V

Gate-Source Leakage Forward

IGSS

ALL

VGS=20V

IGSS

ALL

-100

nA

VGs=-20V

Zero Gate Voltage
Drain Current

loss

ALL

-

'nA

Gate-Source Leakage Reverse

-

100

On-State Drain-Source
Current (2)

1010n)

----

------

ALL

6.0

Static Drain-Source On-State
ROSlon)
Resistance (2)

ALL

-

1.15

Forward Transconductance (2)

ALL

3.0

4.B

gfs

- 1100
ALL
Output Capacitance
Coss
- 170
Reverse Transfer Capacitance Crss
ALL
- 60
ALL
Turn-On Delay Time
- idlon)
---ALL
Rise Time
tr
ALL
Turn-Oft Delay Time
tdloff)
- ALL
Fall Time
tf
- - - t-Total Gate Charge
ALL
Qg
- (Gate-Source Plus Gate-Drain)
--------1 - - - - ---"
ALL
Gate-Source Charge
Qgs
- - - - f - - - - tALL
Gate-Drain ("Miller") Charge
Qgd
- Input Capacitance

CiSS

ALL

250
1000

-------------

_.-

I'A 'Vos=Max. Rating. VGS=OV
I'A Vos=Max. RatingXO.B, VGS=OV, Tc=125°C
A

Vos>IOlon) X ROSlon) max., VGs=l OV

(}

VGs=10V,10=3.0A

-

U

Vos>IOlon) X ROSlon) max. 10=3.0A

lBOO

pF

1.B

350

pF VGs=OV, Vos";25V, f=1.0MHz

150

pF

60

ns

120

ns Voo=0. 5BVoss.10=3.0A,Zo=4.70
(MOSFET switching times are essentially
ns independent of operating temperature.)
ns

40

nC

15

nC

25

nC

150
200

VGs=10V, 10=7.5A, Vos=O.B Max.
Rating (Gate charge is essentially independent
of operating temperature.)

THERMAL RESISTANCE
Junction-to-Case
t---Case-to-Sink

-

Junction-to-Ambient

RthJC

ALL

1.0

K/W

ALL

-

-

RthCS

1.0

-

K/W Mounting

RthJA

ALL

-

-

BO

K/W Free Air Operation

surfac~

flat, smooth. and greased

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Continuous Source Current
(Body Diode)
Pulse Source Current
(Body_D~d~@L _____
~io~F0l"'lllird Voltag~(:1)

Reverse Recovery Time

Symbol

Type

Min

Typ

Max

Units

Is

ALL
ALL

24.0

A

Vso

ALL

-

A

ISM

1.5

V

trr

ALL

-

6.0

BOO

-

ns

Test Conditions

_

.. MOS'ET ;"001

:showing the integral
reverse P-N junction rectifier

I~
G

I

s

Tc=25°C, Is=6.0A, VGs=OV
TJ=150°C,IF=6.0A, d1F/dt=100AlI'S

---:-

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300l's, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

379

N-CHANNEL
'POWER MOSFETS

SSP8N55/6N60
2

5

~~GS"1V f -

t-

VGS=1011

0

~~UIseTest

II

VGs "'65v
BO~

Pulse Test

if:-

VDS>Ia.onjX~)""",

2

VGS=L- f-

TJ=125~C

TJ :z25°C

TJ "'-5

a

~

9
6

vGS

·c

55V

4
VGSJSV_

f--

I
VGS=~ 5V

2

,
100

150

200

250

300

0

Typical Output Characteristics

1 I

14

Typical Transfer Characteristics

eoL),,, I I~tjg~v~~.l I

] I IIIII ~ ~:;~~~~~.~~I~:f= I IIII1111

10

/

~v

a

I--- T,~-t5'C

2
4
8
6
10
12
Vos. GATE·TO-SOURCE VOLTAGE (VOLTS)

VoS. DRAIN·TO-SOURCE VOLTAGE (VOLTS)

10

~TJ=25·C

~--W

VGS=4V

50

V:J=1~5·C

j

3

BY ROSIen)

. ..,;
SSP6N6Q

'r

,

-"'Ii!",

t-

lL

r.

1'.

0
5

"".

100,..

t:::.SSP6N6O

,

2

/

1ms

Jill
10m

0 e : : =Tc 25°C

Tr150·C MAX

5F

r--

IF

VGs=4V

1
10

Vos. DRAIN-TO-SOURC.E VOLTAGE (VOLTS)

Typical Saturation Characteristics

SINGLE PULSE

lOOms

II

2

0~=d==~4~=-==~a~~==~'~2==~~'~8~-=~20

RIhJC-10KIW

2

SSP6N60

llllill

j

r Ii

6N

5
10
20
50 100 200 500
Vos. DRAIN·T(),SOURCE VOLTAGE (VOLTS)

Maximum Safe Operating Area

2
0
5

i:::J>..

I2

1

5

0-0

-n1.

....
,,-

~

j:'#II

".

NOTES

IILJL

D=O.

t:=J,-j

0=0.
~.. O

2 ....

0.0 1
10~

SINGLE PUlSE (YRAN lENT

1~

THERMAL IMPEDANCE)

1-"

-.

10

II IIII
I'll IIII
-,

1 Duty Factor D"~
t,
2 Per Umt Base"'RIhJC =1.0 Deg. elW.
3. TArTc"PIlM
(t).

-.

5
10
2
5
10-,
2
5
10
11. SQUARE WAVE PULSE DURATION (SECONDS)

I 111111'

z....:
I I 11111

1

10

Maximum Effective Transient Thermal Impedance .Junction· to-Case Vs. Pulse Duration

.c8

SAMSUNG SEMICONDUCTOR

380

N-CHANNEL
POWER MOSFETS

SSP6N55/6N60
10
Ii)
TJ ""

6

w

-lsoc

-

~~

Ii)

ifi

~

..."

./

~0

"Sz

~ ,- ~

'""-w

'"T:'=125°C

~
IEw

v-

'"'"i.'l
z

~

///

0

Q

'/.1

...

IIIz

Vot.>lo.un,XR~""1

....

SD,IS Pulse Test

V

II:

t

o

4

8

12

16

01~0--LL~--~~2--~~3--~~--~~--~-'!

20

ID. DRAIN CURRENT (AMPERES)

VSD. SOURCE·TO·DRAIN VOLTAGE (VOLTS)

. Typical Source-Drain Diode Forward Voltage

Typical Transconduc:llnce Va. Drain Current

25

1.25

w

~
g

1.15

z

,;J

g

/

~61.05
Ww
i~

w"
"''''
5~ 0.9 5
v
"II!

-

./

Z

20

V

!II
III
W

'"~c
~~

.,; /

"1-

.!5~

,.... .......

w

.

"

/

15

./

§;!

"

oil!

"I'"

~~
Z

./

10

;;:

'"..

./

~

~

V

i-""""

Q

0.85

V"

,,/

Vr;s 10V
lo=3A

as

'"

CD

0.75
-40

o

40
80
120
TJ. JUNCTION TEMPERATURE ('C)

160

o

-40

Breakdown Voltage Vs. Temperature

3000

Voo~O

,1 .l.

J.

'=1 MHz
CISS=Cgs+Cgd, Cds SHORTEO""'-Cgd
eo..-Cds+CQsCgd ,
Cgs+Cgd

I

0\
! \

~

I

-c--Vos""120V

15

Vos=300V
Vos':"480V

"

1.200

tS

o

160

20

:::Cds+Cgd

1,80

600

40
80
120
TJ. JUNCTION. TEMPERATURE ('C)

5

2.400

i..

0

Normalized On-Resistance Vs. Temperature

C. .

10

~
1.

~~

W

10=75A

\\.....

eo..

10
20
30
40
VDS. DRAIN-TD-SOURCE VOLTAGE (VOLTS)

I
50

Typical CapaCitance Vs. Drain to Source Voltage

ciS SAMSUNG SEMICONDUCTOR

/
20

40

60

80

lOa,

Qg. TOTAL GATE CHARGE (nC)

Typical Gate Charge Vs. Gate-To-Source Voltage

381

N-CHANNEL
POWER MOSFETS

SSP6N55/6N60

I

0;
IE
%

!2

r--

w

u

z

~~~~~;rr~ OJIS' OURAtON.
INITIAL TJ -25°C

(HEATING EFFECT OF 2 ~s

PULSE IS MINIMALl

j!

Vc;,s=1OV

!I!

ra

II:

;

3

Z
0
w

10

I

/V
'/v

8

GS s 20V

1/

6 ..........

l/

U

II:

:::>
0

~

~~

C

II:

I'-- I""--,

4

. /V.

I'--

"

SSP6N6Q

.......

'" "
,
['+..

I

II:

10
15
20
10. DRAIN CURRENT (AMPERES)

25

Typical On-Rasistanca Vs. Drain Currant

: :1 I I
"
""1'.
1

1

·1

I

I

0215

50
75
100
125
TA. AMBIENT TEMPERATURE ('C)

150

Maximum Drllin Currant Vs. Case Temperature

I

r-- ~
0

0

"r'\.
"""

0
0

~

0

"I'\.
o

20

40
60
80
100
120
TA. AMBIENT TEMPERATURE ('C)

140

160

Power Vs. Temperatura Darating Curva

c8 SAMSU~G

SEMICONDUCTOR

382

SSM40N15140N20
SSH40N15140N20 .

N-CHANNEL
POWER MOSFETS

Preliminary Specifications
PRODUCT SUMMARY

150 Volt, 0.08 Ohm SFET

Vos

ROS(on)

10

SSM40N15

150V

0.080

40A

SSM40N20

200V

0.080

40A

SSH40N15

1.50V

0.082

40A

SSH40N20

200V

0.082'

40A

PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•

Part Number

Package Type

Low ROS(on)
Improved inductive ruggedness
Fast switching times
Rugged poly silicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability

Part Number

TO-3

SSM40N15/40N20
.-

._.

-

.._---_..

-~

SSH40N15/40N20

TO-3P

II

MAXIMUM RATINGS
Characteristic

Symbol

SSM40N15

SSM40N20

SSH40N15

SSH40N20

Unit

Drain-Source Voltage (1)

Voss

150

200

150

200

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOGA

150

20b

150

200

Vdc

Gate-Source Voltage

VGS

±20

Vdc

Continuous Drain Current Tc=!25°C

10

40

40

40

40

Continuous Drain Current Tc = 100 ° C

10

25

25

25

25

Adc

Drain Current-Pulsed (3)

10M

160

160

160

160

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

200

Watts

1.6

W/oC

Operating and Storage
Junction Temperature Range

TJ, Tstg

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

SAMSUNG SEMICONDUCTOR

300

TL

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse width"300"s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction

c8

-55 to

150

Adc

°C

I

°C

temper~ture

383

SSM40N15140N20
SSH4'ON15140N20

N-CHA'NNEL .
POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

(Tc=25°C unless otherwise specified)

Min Typ

Drain-Source -Breakdown
Voltage

BVoss

40N15
40N20

150
200

Gate Threshold Voltage,

VGS(th)

ALL

2.0

-

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

On-State Drain-Source
Current (2)

10(on)

ALL

40

Static Drain-Source On-State
ROS(en)
Resistance (2)

ALL

-

Forward Transconductance (2)

g,.

ALL

10

Input CapaCitance

CiSS

ALL

Output Capacitance

Cess

ALL

Reverse Transfer Capacitance

Crss

ALL

Turn-On Delay Time

ld(on)

ALL

t,

ALL

-

Rise Time\
Turn-Off Delay Time

tdloH)

Fall Time

ALL L

t,

ALL

Qg

ALL

Gate-Source Charge

Qgo

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

-

-

(

Test Conditions

Max

Units

-

V
V

VGS';;'OV
10= 250llA

4.5

V

Vos=VGS, 10=250/iA

100

nA

VGS=20V

-100
250

nA VGs=20V
IlA Vos=Max. Rating VGs=OV

-

1000

-

-'

A

VOS>IO(on)XROS(on) max" VGs=10V

-

O.OS

0

VGs=10V,10=.20A

-

IJ

Vos>IO(on)XROS(on) mOl<, 10=20A

4500

pF

-

-

IlA Vos=Max. RatingXO.S, VGS=OV,
Tc=125°C

SOO

pF VGs=OV, Vos=25V, f= 1.0MHz

200

pF

130

ns

630

Voo.=0.5BVoss, 10=20A, Zo=4.70
(MOSFET switching times are essentially
ns independent of operating temperature.)

210.

ns

240

nC VGs=10V, 10=50A, Vos=O.B Max. Rating
(Gate charge is essentially independent
nC of operating temperature.)
,
nC

2S0

SO
160

ns

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case,-to-Sink

Rthcs

ALL

Junction-to-Ambient

SSM40N15120
RNA
. SSH40Nl5120

-

0.1

-

-

0.63

-

K1W
K/W Mounting surface flat, smooth, and greased

30· KIW
Free ~ir Operation
SO
K/W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
Reverse Recovery Time

.

Sym~1

Type

Is

ALL

ISM

ALL

Vso

ALL

trr

ALL

Min: Typ

'-

-

-

Max Units
40

A

Test Conditions

ModIMd
MOS'ET
showing the
integral_ . .

I

~.

A

reverse P-N junction rectifier

2.5

V

Tc=25°C, Is=40A VGs=OV

-

ns TJ=150°C, IF=40A, dIF/dt=l00AljlS

16(}-

G

i

s

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width4t300llS, Duty Cycle4t2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

'41 ~AMSUNG

SEMICONDUCTOR

," 3S4

SSM40N15/40N20
SSH40N15/40N20

N-CHANNEL
POWER MOSFETS
200

1.25

\

~

u;

S
~

.,;.
5

:.,....- V

5~

--

l.---" ~

.,..,... 10'"

150

~

z

\

~c

"-

iii
is

100

a:
w
II

5!

o

40

80

120

~

50

~

5

0.75
-40

\

III

0

160

40

20

80

80

100

f\.,.
:'\.

120 .140

TJ. JUNCTION TEMPERATURE (0C)

Te. CASE TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

Power Vs. Temperature Derating Curve

16

025

2. 5

u;
I
:c.i ·

0

~ 02

V

!

..... V

5

/

I---"'"

V

faa:

1/

--V

01 5

r'

J

~

L

I'l

VG5=lOV

1o=2rA-

t--

II
........ V

.

~ 0.05

VGS=20V

k-'"

I

a:

o
40

0
40
80
120
T... JUNCTION TEMPERATURE (OC)

Normalized

c8

VG$=10V

O~eslstance

Va. Temperature

SAMSUNG SEMICONDUCTOR.

160

25

Typical

50
75
100
10. DRAIN CURRENT (AMPERES)
O~eslstance

125

Vs. Drain Current

385

SSM20N45120N50

N-CHANNEL
POWERMQSFET$

S~H20N45120N50
Preliminary Specifications.

PRODUCT SUMMARY

500 Volt,0.3 Ohm SFET

Vos

ROS(on)

10

SSM20N4S

4S0V

0.;30

20A

SSM20NSO

SOOV

0.30

20A

SSM20N4S

4S0V

0,3!)

20A

SSM20N50'

SOOV

·0.30

20A

PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•
•

Part Number

Part Number

Package Type

Low RDS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability

TO-3

SSM20N4S/20NSO

TO-3P

SSH20N4S/20NSO

---

MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (RGS = 1 .OMQ)( 1 )

Symbol

SSM20N45

SSM20N50

SSH20N45

SSH20N50

Unit

Voss

4S0

SOO

4S0

SOO

Vdc

',VDGR

4S0

SOO

4S0

SOO

Vdc

Gate-Source Voltage
Continuous Drain Current Tc=2SoC
Continuous Drain Current Tc= 1 00 ° C
Drain Current-Pulsed (3)
Gate Current-Pulsed

,

Vdc

10

201

20

20

20

Adc

.10

13

13

13

13

Adc

10M

80

80

80

80

Adc

IGM

±1.S

Adc

Po

200
1.6

Watts

W/oC

TJ, Tstg

-SS to 1S0

°C

TL

300

°C

Total Power Dissipation @ Tc=2SoC
Derate above 25 ° C
Operating and Storage
Junction Temperature Range

±20

VGS

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for f! seconds

Notes: (1) TJo=2SoC to 1S0°C
. (2) Pulse test: Pulse width';;;300,..s, Duty Cycle';;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

386

N-CHANNEL

SSM20N45120N50
SSH20N45120N50

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type·

(Tc=25°C unless otherwise specified)

Min Typ

20N45

450

Drain-Source Breakdown
Voltage

BVoss

20N50

500

Gate Threshold Voltage

VGS(Ih)

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

On-State Drain-Source
Current (2)

10(on)

-

ALL

20

Static Drain-Source On-State
ROS(on)
Resistance (2)

ALL

-

Forward Transconductance (2)

gf.

ALL

7.0

-

-

-

0.1

Input Capacitance

Ciss

ALL

Output Capacitance

C_

ALL

Reverse Transfer Capacitance

C,..

ALL

'Id(on)

ALL

t,

ALL

td(OIf)

ALL

tf

ALL

.Qg

ALL

Gate-Source Charge

Qgo

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)

Test Conditions

Max Units

-

V
V

VGs=OV
10= 250lolA

4.5

V

Vos = VGS, 10=2501olA

100

nA

VGs=20V

-100
250
1000

nA VGs=-20V
lolA Vos=Max. Rating, VGS=OV
lolA Vos=Max. RatingxO.8, VGs=OV, Tc=125°C

-

A

Vos>IO(on)XROS(on) max., VGS-1 OV

0.3

0

VGs=10V,10=10A

-

0

VoS>lo(on)XRDS(on) max., 10= 1 OA

3800

pF

550

pF VGs=OV, Vos=25V, f=1.0MHz

140

pF

130

ns

II

630

Voo=0.5BVoss, 10= 1OA, Zo=4.7 0
ns (MOSFET switching times are essentially
ns independent of operating temperature.)

210

ns

240

nC VGs=-15V, 10=-3.0A, Vos=0.8 Max.
Rating (Gate charge Is essentially independent
nC of operating temperature.)

280

80
160

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RlhCs

ALL

Junction-to-Ambient

RIhJA SSM20N45/50
SSH20N45/50

-

0.63 ·K/W

30
tlU

K/W Mounting surface flat," smooth, and greased
K/W Free Air Operation

KIW

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
Reverse Recovery Time

Symbol

Type

Is

ALL

ISM

ALL

Vso

ALL

Irr

ALL

Min Typ

-

-

Max Units

Test Conditions

""",oJ ~
G

·20

A

80

A

2.5

Tc=25°C, Is=20A, VGs=OV
ns TJ=150·C, IF=20A, dlF/dt=100Allois

Mod'" MOSFET

I

-

showing the integral
reverse P-N junction rectifier

s

V

Notes: (1) TJ=25·C to 150·C
(2) Pulse test: Pulse width... 300/lS, Duty Cycl&... 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

387

SSM20N45/20N50
SSH20N45/20N50 '

'N-CHANNEL
POWER MOSFETS
200

1.25

5

,..

V

~~

/

~

,-

/

i

~

I\.

Z
0

i\.
\t\,

~

~
15

~

100

'\

II:

;
0
...
...cS

075
-40

"

150

a

40
80
120
TJ. JUNCTION TEMPERATURE ('C)

a

160

i
§.

40

60

80

100

06

0.5

120

140

1 I II I I 'II
I A/l
I I I/X
VOS=l~7Y

i

./"

V

i\.
20

Te. CASE TEMPERATURE ('C)

/

.",

I\.

Power Vs. Temperature Derstlng Curve

Breakdown Voltage Vs. Temperature

,..

'\.

'50

A

m Q..4

V

A

~

/'

;/

10--""'"

~:VGS""2OV

~

"

~
Vas-lOY
1o""10A

-40

a

40
80
120
TJ. JUNCTION TEMPERATURE ('C)

Normalized On-Reslslance Vs. Temperature

c8

SAMSUNG SEMICONDUcrOR'

160

, 16

32

48

64

80

In. DRAIN CURRENT (AMPERES)
Typical On-Reslstance Vs. Drsln Current

388

N-CHANNEL
POWER MOSFETS

SSM15N55115N60
SSH15N55115N60
Preliminary Specifications

PRODUCT SUMMARY

600 Volt, 0.5 Ohm SFET

Vos

ROS(on)

10

SSM15N55

550V

0.5Q

15A

SSM15N60

600V

0.50

15A

SSH15N55

550V

0.50

15A

SSH15N60

600V

0.50

15A

PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•
•

Part Number

Package Type

Low RDS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times·
Rugged polysilicon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability

Part Number

TO-3

SSM15N55/15N60

TO-3P

SSH15N55/15N60

MAXIMUM RATINGS
Symbol

SSM15N55

SSM15N60

SSH15N55

SSH15N60

Unit

Drain-Source Voltage (1)

Voss

550

600

550

600

Vdc

Drain-Gate Voltagfi! (RGs= 1.0MD) (1)

VOOR

550

600

550

600

Gate-Source Voltage

VGS

Characteristic

Continuous Drain Current Tc=25°C
Continuous Drain Current Tc = 100 ° C
Drain Current-Pulsed (3)
Gate Current-Pulsed

Vdc
Vdc

10

15

15

15

15

Adc

10

10

10

10

10

Adc

60

60

Adc

10M

60

60

·IGM

±1.5

Adc

Po

200

Watts

1.6

W/oC

TJ, Tstg

'-55 to 150

°C

TL

300

°C

Total Power Dissipation @ Tc·=25°C
Derate above 25°C
Operating and Storage
. Junction Temperature Range

±20

Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse width .. 300,.s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited.by max. junction temperatl,lre

c8

SAMSUNG SEMICONDUCTOR

389

II

.ii-CHANNEL

SSM15N55115N60
SSH15N55115N60

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Drain-Source Breakdown
Voltage

BVoss

Gate Threshold Voltage

Type

(Tc=25·C unless otherwise specified)

Min Typ.

! 15N55

.550

15N60

. 600

VGS(th)

ALL

2.0

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

-

On-State Drain-Source
Current (2)

10(on)

ALL

15

Static Drain-Source On~State
ROS(on)
Resistance (2)

ALL

-

Forward Transconductance (2)

g,.

ALL

7.0

-

Input Capacitance

CiS.

ALL

Output Capacitance

Coss

ALL

Reverse Transfer CapaCitance

Crss

ALL

Turn-On Delay Time

id(on)

ALL

tr

ALL

td(off)

Rise Time

-

ALL

-

t,

ALL

-

Total Gate Charge
(Gate-Source Plus Gate-Drain)

09

ALL

Gate-Source Charge

Ogs

ALL

Gate-Drain ("Miller") Charge

Ogd

ALL

-

Turn-Off Delay Time
Fall Time

-

Test Condilions

Max Units

4.5

V

VGs=OV

V

10=2501'A

V

Vos=VGS, 10=2501'A

100 . nA VGs=20V

--

-100 nA VGs=-20V
250

-----

I'A Vos=Max. Rating, VGs=OV

1000 ,.A Vos=Max. RatingXO.8, VGs=OV, Tc=125·C

-

A

Vos>IO(on)XROS(on) max, VGs='10V

0.5

0

VGs= 1 OV, 10.=8.0A

-

{}

Vos>IO(on)X ROS(on) max., lo=8.0A

3800

pF

--

550

pF VGs=OV, Vos=25V, f=1.0MHz

140

pF

130

ns

280
630

ns 'Voo=0.5BVoss, ! 10=8.0A, Zo=4.7IO
(MOSFET switching times are essentially
ns independent of operating temperature.

210

ns

240

nC VGs= 1 OV, 10= l8A, Vos=0.8 Max.
Rating (Gate charge is essentially independent
nC of operating temperature.) .
nC

80
160

THERMAL RESISTANCE

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Type

Is

ALL

Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)

ISM

ALL

Diode Forward Voltage (2)

Vso

ALL

trr

ALL

Reverse Recovery Time

Min Typ

-

-

Max Units
15

Test Conditions

A

Mod..., MOSFET "mO,l
60
2.5

-

A
V

showing the integral
reverse P-N junction rectifier

~
.
G

S

Tc=25·C, Is=15A, VGs=OV

ns TJ=150·C, IF=15A, dlF/dt=100A/l's

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse width<300,.a, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR •

390

SSM15N55115N60
SSH15N55115N60

N-CHANNEL
POWER MOSFETS

1.25

200

"

.
~

V
5~

V

....

"

Iii

150
S
i!.

i-""""

Z
0

.
~

.....V

~

./

100

'\.

I\.

\

,.

15

2
f

5

'\

50

0.75

-40

'\

a

40

80

120

20

a

160

eo

40

Te.

TJ. JUNCTION TEMPERATURE (OCt

eo

0.7

2.5
0;
:2

tS=lol

:I:

~ 0.6

V
L~

,

0.5

V
./

l/

Z

~
iii
I:!

0.5

w

":>a:
0

0.4

~,

'9

Vos"'10V

lo'""SA

160

i
a:
c

I

ilL
IJ

--'.V' i'VGS~20V

0

V

140

1/

~

z

..,..'/

~

120

CASE TEMPERATURE (OCt

power Vs. Temperature Derating Curva

Breakdown Voltage Vs. Temperature

fi!

100

~

....

0.3

~

~

,/'"

I

a:

0.2

a

12

24
36
48
ID. DRAIN CURRENT (AMPERESt

60

Typical On-Resistance Vs. Drain Current

=8

SAMSUNG SEMICONDUCTOR

391

SSM25N35/25N40
SSH25N35/25N40

N-CHANNEL
POWER MOSFETS

.Preliminary Specifications
PRODUCT SUMMARY

400 Volt, 0.25 Ohm SFET

.B
~

Vos

·RoS(on) .

10

SSM25N35

350V

0.25

25A

SSM25N40

400V

0.25

25A

SSH25N35

350V'

0.25

25A

SSH25N40

400V

0.25

25A

PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•

Part Number

Package Type

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Lower input capacitance
Extended safe operating area
Improved high temperature reliability

Part Number

TO-3

SSM25N35/25N40

TO-3P

SSH25N35/Z5N40

MAXIMUM RATINGS
Symbol

SSM25N35

SSM25N40

SSH25N35

SSH25N40

Unit

Voss

350

400

350

400

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VOOR

350

400

350

400

Vdc

Gate-Source Voltage

VGS

Characteristic
Drain-Source Voltage (1)

.±20

Vdc

Continuous Drain Current Tc=25°C

10

25

25'

25

25

Adc

Continuous Drain Current Tc= 100°C

10

16

16

16

·16

·Adc

Drain Current-Pulsed (3)

10M

100

100

100

100

Adc

Gate Curreot-:Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

200
1.6

Watts

W/oC

TJ. Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for q seconds

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width';;300"s. Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

392

SSM25N35125N40

N-CHANNEL

SSH25N3512~N40

POWER MOSFETS

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

(Tc=25°C unless otherwise specified)

Min Typ

Max

Units

Test Conditions

-

V

VGs=OV

V

io=250"A

V

Vos=VGS. 10=250"A

25N35

350

-

25N40

400

-

VGS(th)

ALL

2.0

. Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

-

-100

Zero Gate Voltage
Drain Current

loss

ALL

-

-

250

"A Vos=Max. Rating VGs=O

1000

"A Vos=Max. RatingXO.B. VGS=OV. Tc=125°C

On-State Drain-Source
Current (2)

10(on)

ALL

25

-

-

A

Vos>lo(on) X Ros(on) max .• VGs=l OV

Static Drain-Source On-State
ROS(on)
ReSistance (2)
.

ALL

-

0.25

Il

VGs=10V.lo=13A

Forward Transconductance (2)

gt.

ALL

7.0

-

-

!J

VOS>ID(9n) X ROS(on) max .• 10= 13A

-

3BOO
550

pF VGs=OV. Vos=25V. f=1.0MHz

-

140

pF

130

ns

torain-source Breakdown
Voltage

BVoss

Gate Threshold Voltage

,

--- c-.4.5
- I---- -100
-

Input Capacitance

Cis.

ALL

-

Output Capacitance

Coss

ALL

Reverse Transfer CapaCitance

Crss

ALL

!d(on)

. ALL

-

t,

ALL

-

td(ofl)

ALL

tt

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

-

-

Gate-Source Charge

Qg.

ALL

.-

-

BO

Qgd

ALL

-

-

160

Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Gate-Drain ("Miller") Charge

._-_.

nA VGs=20V
-

nA VGs=-20V

-

pF

I

630

Voo;=0.5BVoss. 10=13A. Zo=4.71l
ns (MOSFET switching times are essentially
ns independent of operating temperature.)

210

ns

240

nC VGs=10V. 10=30A; Vos=0.8 Max.
Rating (Gate charge is essentially independent
nC of operating temperature.)

2BO'

nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

-

-

0.63

CaSe-to-Sink

Rthcs

ALL

-

0.1

-

Junction-to-Ambient

RthJA

SSM25N35140
SSH25N35140

30

BO

K/W
K/W Mounting surface flat. smooth. and greased
K/W Free Air Operation

KIW

SOURCE-DRAIN' DIODE RATINGS AND' CHARACTERISTICS
Characteristic

Continuous Source Current
Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
Reverse Recovery Time

Symbol

Type

Is

ALL

ISM

ALL

Vso

ALL

t"

ALL

Min Typ

-

-

Max

Units

25

A

Test Conditions

Mod'" MOSFET.,_

~
G

A

showing the integral
reverse P-N junction rectifier

2.5

V

Tc=25°C.ls=25A. VGs=OV

-

ns TJ=150°C. IF=25A. dIF/dt=100A/"s

100

S

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<3001'8. Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max: junction temperature .

c8SA~SUNG SEMICONDUcroR

393

N-CHANNEL.

SSM25N35125N40
SSH25N35125N40

POWER MOSFETS

1.25

200

..".

""
""
""

5 ....

~

I\.

z

~

I

'\

100

a:

'-

'\

•
III

2

,f

5

0.75
-40

.150

C

!.

i""'"

.,-

./

~

~

"

'\

0
40
80
120
TJ. JUNCTION TEMPERATURE ('C)

'\

50

"

\.

o

160

20

.

40
60
80
100
120
Te. CASE TEMPERATURE ('C)

140

160

Power Vs. Temperature Derating Curve

Breakdown Voltage Vs. Temperature
0.5

2.5

Vr,I"'10V

I.

/
./

/

..- ""

V

III

/ /
1/ {~=20V

o.

~

V

I

/'"

0.3

,;"

""

/

....

~

/J

~~

Vas-tOV
1o=13A

-40

0
40
80
' 120
TJ. JUNCTION TEMPERATURE ('C)

Normalized On-Resistance Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR

160

20

40

60

80

100

10. DRAIN CURRENT (AMPERES)

. Typical On-Resistance Vs. Drain CUrrent

394

SSM10N70
SSH10N70

N-CHANNEL
POWER MOSFETS

Preliminary Specifications
PRODUCT SUMMARY

700 Volt, 1.0- Ohm SFET

Part Number

VDS

SSM10N70

700V

1.00

10A

SSH10N70

700V

1.00

10A

ROS(on)

ID

PACKAGE STYLE
Package Type

FEATURES
•
•
•
•
•
•
•
•

Low RoS(on) at high voltage
Improved inductive ruggedness
Excellent high voltage stability
Fast switching times
.
Rugged polysilicon gate cell structure
Low input capacitance
Exiended safe operating area
Improved high temperature reliability

Part Number

TO-3

SSM10N70

TO-3P

SSH10N70

MAXIMUM RATINGS
Symbol

SS~10N70

SSH10N70

Unit

Drain-Source Voltage (1 )

Voss

700

700

Vdc

Drain-Gate Voltage (RGS=1.0MO) (1)

VOGR

700

700

Vdc

Characteristic

. Gate-Source Voltage

Vdc

±20

VGS

Continuous Drain Current Tc=25°C

10

10

10

Adc

Continuous Drain Current Tc = 1 00 ° C

10

6.5

6.5

Adc

Drain Current-Pulsed (3)

10M

40

40

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25 d C
Derate above 25°C

Po

200
1.6

Watts
W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds
Notes: (1) TJ=25°C to 150°C

(2) Pulse test: Puis!,! width';;300/As, Duty Cycle';;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

395

I

SSM10N70
SSH10N70

N-CHANNEL·
POWER· MOSFETS
t

ELECTRICAL CHARACTERISTICS

(Tc=25°C unless otherwise specified)

Symbol

Type.

Drain:Sourc«;l Breakdown
Voltage

BVoss

ALL

700

Gate Threshold Voltage

VSS(Ih)

ALL

2.0

Gate-Source Leakage Forward

lass

ALL

Gate-Source Leakage Reverse

Isss

ALL

-

Characteristic

Zero Gate Voltage
Drain Current

loss

On-State Drain-Source
Current (2)

10(onl

ALL

ALL

MiA' Typ

10

Static Drain-Source On-State
SSM10N70
ROS(on)
Resistance (2)
SSH10N70

-

Forward Transconductance (2)

gt.

ALL

7.0

Input Capacitance

Ciss

ALL

Output Capacitance

Co..

ALL

Reverse Transfer Capacitance

Cr••

ALL

-

Turn-On Delay Time

leI(onl

ALL

-'-

tr

ALL

leI(off)

ALL

tt

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Og

ALL

Gate-Source Charge

Ogs

ALL

Gate-Drain ("Miller") Charge

Ogd

ALL

-

Rise Time
Turn-Off Delay Time.
Fall Time

-

Test Conditions

Max

Units

-

V

Vss=OV
10=250,..A

4.5

V

Vos=Vss. 10=250,..A

100

nA Vss=20V

-100
250
1000

3.0

nA Vss=-20V
,..A Vos=Max. Rating. Vss=OV
,..A Vos=Max. RatingXO.8. VGS=OV. Tc=125°C

...
A Vos>IO(on)XRoS(on) max. Vss=.10V

0 Vss= 1 OV: 10=5.0A

-

0

3800

pF

Vos>10(on)XROS(on)mlix .• 10=5.0A

550

pF Vss=OV. Vos=25V. f=1.0MHz

140

pF

130

ns

280

ns

--

._----

630

Voo=0.5BVoss.10=5.0A, Zo=4.7()
(MOSFET switching times are essentially
ns independent of operating temperature.)

210

ns

240

160

nC VGs=10V, 10=13A. Vos=0.8 Max. Rating
(Gate charge· is essentially independent
nC
of operating temperature.)
nC

0.63

K/W

80

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthcS

ALL

Junction-to-Ambient

S$M10N70
RthJA
SSH10N70

-

0.1

-

K/W' Mounting surface flat, sinooth, and greased

-

30
80

K/W
Free Air Operation
K/W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Type

Is

ALL

ISM

ALL

Vso

ALL

trr

ALL

Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode) (3)
Diode Forward Voltage (2)
Reverse Recovery Time

I

·Mln Typ

-

-

Max

Units

10

A

40

A

2.5

V Tc=25°C,ls-10A, Vss-OV
ns TJ-150°C. IF-10A, dIF/dt-100Al,..s

-

Test Conditions

"
showing
- the
MOSFET
integral.
.ymbO
reverse P-N junction rectifi«;lr

I G.~ I
s

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: PiJlse widthil;;300,..s, Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by·max. junction temperature

c8 SAMSU~G

SEMICONDUCTOR

. .396

SSM10N70
SSH10N70

N-CHANNEL
POWER MOSFETS

125

. 200

iii

I:C

...- "'"
"...

,,""""
"......

..".

V

z

"- '\.

\

~c

.,:Ii

100

I\.

'\

.
is

a:

..

"-

~
0

~

085

075
-40

150

!.

"".,

l

'\

0

40

80

120

160

50

o

20

40

60

80

100

"- l\.

120

140

Tj. JUNCTION TEMPERATURE (OC!

Te. CASE TEMPERATURE ("C}

Breakdown Voltage Vs. Tamperature

Power Vs. Tamparature Derating Curve

160

1 U

2.5

I

/

V

...-

./

V

. /V

./

Vr•.,=10V

--

o
0
40
80
120
TJ. JUNCTION TEMPERATURE ("C}

Normalized On-Resistance Vs. Temperatura

=8

..... ~

~

VGS ""10V
ID-5A

-40

~

~ ~=20V

SAMSUNG SEMICONDUCTOR

160

8

16

24

..

::I~

4U

10. DRAIN CURRENT (AMPERES}

Typical On-Rasistance Vs. Drain Current

397

P-CHANNEL
POWER MOSFETS

IRF951 0/9511/9512/9513
Preliminary Specifications

PRODUCT SUMMARY

-100 Volt, 1.2 Ohm SFET

G~

VDS

RDS(on)

ID

IRF9510

-100V

·1.20

-3.0A

IRF9511

-60V

1.20

-3.0A

IRF9512

-100V

1.611

-2.5A

IRF9513

-60V

1.60

-2.5A

I

. PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•

Part Number

Low ROS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure·
Low Input capacitance
Extended safe operating area
Improved high temperature reliability

Package Type

Part Number

TO-220

IRF951 0/9511/9512/951 3

MAXIMUM RATINGS
IRF
Symbol

9510

9512

9513

Unit

Drain-Source Voltage (1)

Voss

-100

-60

-100

-60

Vdc

Drain-Gate Voltage (RGs= 1.0MO)(1)

VOGR

-100

-60

-100

-60

Characteristic

Gate-Source Voltage

9511

±20

VGS

Vdc
Vdc

Continuous Drain Current Tc=25°C

10·

-3.0

-3.0

-2.5·

-2.5

Adc

Continuous Drain Current Tc=1 OO°C

10

-2.0

-2.0

-1.5

,-1.5

Adc

Drain Current-Pulsed (3)

10M

-12

-12

-10

-10

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

20
0.16

Watts
WloC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Noteal· (1) TJ=25°C to 150·C
. (2) Pulse test: Pulse width.. 300/AS, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited !:Iy max. junction temperature

.qs

SAMSUNG SEMICONDUcrOR

398

P..CHANNEL
POWER MOSFETS

IRF951 0/9511/9512/9513
ELECTRICAL CHARACTERISTICS
Symbol

Characteristic

Drain-Source Breakdown
Voltage

BVoss

Gate Threshold Voltage

Type

(Tc=25°C unless otherwise specified)
Typ

Max

Units

IRF9510
-100
IRF9512

Min

-

-

V

IRF9511
-60
IRF9513

-

'V- 10=-250"A

IRF9510
-3.0
IRF9511

-

IRF9512
-2.5
IRF9513

VGS(th)

ALL

-2.0

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

Zero Gate Voltage
Drain Current

loss

ALL

On-State Drain-Source
Current (2)

10(on)

IRF9510
IRF9511
Static Drain-Source On-State
1:I0S(on)
Resistance (2)
IRF9512
IRF9513

-

-

Test Conditions
VGS=OV

-4.0

V

-100

nA

VGs=-20V

100

nA

VGs=20V

-250

"A

Vos=Max. Rating, VGs=OV

Vos=VGs,10=-250"A

-1000 "A Vos=Max. RatingXO.8, VGs=OV, Tc=125°C

-

A

-

-

A

-

-

1.2

0

-

1.6

0

Vos>IO(on) X ROS(on) max" VGs=-1 OV

•

VGs=-10V,10=-1.5A

Forward Transconductance (2)

gfs

ALL

0.8

Input Capacitance

C,..

ALL

Output Capacitance

Co';'

ALL

Reverse Transfer Capacitance

Cr"s

ALL

Turn-On Delay Time

td(On)

ALL

tr

ALL

-

-

-

-

-

1.. 0

-

K/W Mounting surface flat, smooth, and greased

-

80

K/W Free Air Operation

Rise Time
Turn-Off Delay Time

td(off)

ALL

Fall Time

'If

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Qgs

ALL

Qgd

ALL

..Gate-Drain ("Miller") Charge

...

-

U

250

pF

100

pF

35

pF

30

ns

·60

ns

40

ns

40

ns

11

nC

4

7

Vos>IO(on)XROS(on)

max"

1,0= -1.5A

VGS=OV, Vos=-25V, f;=1.0MHz

Voo=0.5BVoss, 10 =-1.5A, Zo=500,
(MOSFET switching times are essentially
independent of operating temperature.)

VGs=-15V, 10=-4.0.0., Vos=0.8 Max.
Rating (Gate charge is essentially independent
nC of operating temperature.)
nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Slnk

Rthcs

ALL

Junction-to-Ambient

RthJA

ALL

-

6.4

K/W

Notes: (1) TJ=25°C to 150°C
(21 Pulse test: Pulse width~300j.ls, Duty Gycle~2%
(3) Repetitive rating: PU,Ise width limited by max. 'I\Jnlltion temperature

c8

SAMSUNG SEMICONDUCTOR

399

P;'CHANNEL
POWER MOSFETS

IRF951 0195111951219513

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode)

Putse Source Current
(Body Diode) (3)

Symbol

Type

-

Is

IRF951 0
IRF9511
IRF9512
IRF9513

ISM

Diode Forward Voltage (2)

VSD

Min' Typ

Max

Units

-

-3,0

A

-

-

-2,S

A

IRF9510
IRF9511

-

-

-12

A

IRF9512
IRF9513

-

-

-10

A

-

-S.S

V

Tc=2SoC, Is=-3,OA, VGs=OV

-S.3

V

Tc=2SoC, Is=-2.SA, VGs=OV

IRF9510
IRF9511
IRF9512
IRF9513

Test Conditions

M""_ MOSFET "mbo

showing the integral
reverse P·N junction rectifier

~J
G

s

'.

-

Reverse Recovery Time
t",
ALL
ns TJ=lS0°C, IF=-3.0A, dIF/dt=100Al,.s
Notes: (1) TJ=2SoC to 1S0°C (2)' Pulse test: Pulse width';;300,.s, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
20

1.25

o>~

,..
,.... ...-

1,15

I

,

5!

.,..V

§i

~~0,95

I
t

I

"V

120
0
40
80
TJ; JUNCTION TEMPERATURE (OC)

\
o

160

j

w

2.0

ill

w

II:

V

1,5

1I:::i

./

"'c
02

I

L

-

1,0

:C'

2i

\.
20

40
60
80
100
120
Te, CASE TEMPERATURE (OC)

140

160

4,0

Z

~-

1'\

Power Vs. Temperature Derating Curve

()

6~

\

...
...oS

0,85

2.5

~S
~~

"'r\.

II:

Breakdown Voltage Vs. Temperature

Iii

"

10

;0

V-

0.75
-40

c

'\.

15

~

ilh05

w~

\

V

"

,/"

~

v

w

a
Z

iii

"

28
Voo=-10V

w

24

Z
0

2,0

II:

w

...§

I
I

II

()

II:

'"

V

i
II:

g

Vas --10V
/om-15A

1,6

1.2
0,8

j

--'

VG&=-20:""

I

o
-40

I

3.2

()

0.5

II:

3,6

II:

0
40
80
1,20
TJ, JUNCTION TEMPERATURE (OC)

Normalized On-Resistance Va. Temperature

c8SAMSUNG SEMICONDUCTOR

160

-2

-4

-6 -8
10 --12 -14
16
10, DRAiN CURRENT (AMPERESI'

18

20

Typical On-Reslstance Vs. Drain Current

400

IRF9120191211912219123
IRFP9120191211912219123
IRF9520195211952219523

P-CHANNEL
POWER MOSFETS

Preliminary Specifications

PRODUCT SUMMARY

-100 Volt, 0.60 Ohm SFET

Part Number

Vos

IRF/IRFP9120. IRF9520 -100V

RoS(on)

10

0.600

-6.0A

-~

-60V

IRF/IRFP9121. IRF9521

._-

c-----

0.600
1-----

-6.0A
~~--

0.800 -5.0A
t----- - -60V 0.800 -S.OA

IRF/IRFP9122. IRF9522 -to'oV
._._- - - - -

-

IRFIIRFP9123. IRF9523

PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•

Part Number

Package TYPII

Low ROS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polysllicon gate cell structure
·Low input capacitance
Extended safe operating area
Improved high temperature reliability

TO-3

IRF9120/9121/9122/9123

TO-3P

IRFP9120/9121 19122/91 23

--

----.-----.---

TO-220

IRF9520/9521 19522/9523

MAXIMUM RATINGS
IRF/lRFP
Symbol

9120
9520

9121
9521

9122
9522

9123
9523

Unit

Drain-Source Voltage (1)

Voss

-100

-60

-100

-60

Vdc

Drain-Gate Voltage (RGs=1.0MO) (1)

VDGR

-100

-60

-100

-60

Vdc

Gate-Source Voltage

VGS

Characteristic

±20

Vdc

Continuous Drain Current Tc=25 DC

10

-6.0

-6.0

-5.0

-5.0

Continuous Drain Current Tc=100DC

10

-4.0

-4.0

-3.5

-3.5

Adc

Drain Current-Pulsed (3)

10M

-24

-24

-20

-20

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25 DC
Derate above 25 DC

Po

40
0.32

Watts
W/DC

TJ. Tstg

-55 to 150

DC

TL

300

DC

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

Adc

Notes: (1) TJ=25 DC to 150 DC
(2) Pulse test: Pulse widIh<300,..s. Duty Cycle402%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

401 '

•

Inr~

I

,u,~

I ' I'~ I "'~

I'~

P-CHANNEL
POWER MOSFETS

IRFP9120/9121/9122/9123
IRF9520/9521 19522/9523
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Symbol

Type

(Tc=2S·C unless otherwise specified)

Min Typ

ALL

-2.0

IGSS

ALL

Gate-Source Leakage Reverse

IGSs

ALL

-

Zero Gate Voltage
Drain Current

loss

ALL

IRF912011
IAFP912011 -6.p
On-State Drain-Source Current lo(on) IRF952011
IRF912213
IAFP912213 -S.O
IAF952213
IAF912011
IAFP912011
IAF952011
Static Drain-Source On-State
ROS(on)
Resistance (2)
IRF912213
IAFP912213
IRF952213

-

V

--:-

-

V

-

O.B

0

ALL

Reverse Transfer CapaCitance

Cr••

ALL

Turn-On Delay Time

td(On)

ALL

tr

ALL

td(Om

ALL

ALL

Gate-Source Charge

Qg.

ALL

Gate:Drain ("Miller") Charge

Qgel

ALL

"A Vos=Max. RatingXO.B. VGS=OV. Tc=12S·C

-

Co••

Qg

-1000

0

Output Capacitance

ALL

nA V,s=20V
"A Vos=Max. Rating. VGs=OV

0.6

-

Vos=VGs. 10=:- 2S0"A

-2S0

-

0.9

tl

100

-

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

V

nA VGs=-20V

A

ALL

10=-2S0",A

-4.0

-

gl.

VGs=OV

-100

-

Ci..

Test Conditions

,

A

Forward Transconductance (2)

Turn-Off Delay Time
f--Fall Time

-

-

Input Capacitance

Rise Time

Units

-

VGS(th)

Gate-Source Leakage Forward

Gate Threshold Voltage

Max

IRF912012
1RFP912012 -100
IRF952012
BVoss
IRF912113
IAFP912113 -60
IRF952113

Vos>IO(on)XROS(on)

max .•

VGS= -1 OV

VGs=":'10V.10=-3.SA

-

U

4S0

pF

3S0

pF VGs=OV. Vos=-2SV. f=1.0MHz

100

pF

SO,

ns

100

ns

100

ns

100

ns

22

nC

9
13

Vos>IO(on)XROS(on)

max .•

1t)=-3.SA

VOO= 0-. SBVoss. 10=-3.SA. Zo=SOO.
(MOSFET switching times are essentially
independent of operating temperature. )

VGs=-1SV.10=~B.OA. Vos=0.8 Max.
Rating (Gate charge is essentially independent
nC of operating temperature.)
nC

THERMAL RESISTANCE
Junctl.on-to-Case

RthJC

ALL

Case-to-Sink

Rthcs

ALL

Junction-to-Ambient

RthJA

IRFPXXXX
IRF95XX
IRF91 XX

-

-

3.12

1.0

-

K/W Mounting surface flat. smooth, and

-

BO

K/W

30

K/W

K/W
gre~ed

Free Air Operation

Notes: (1) TJ"2S~C to 1S0·C
(2) Pulse test: Pulse wldth"300",s, Duty Cycle.. 2%
(3) Repetitive rating: ,Pulse width limited by max. junction temperature

'c8SAMSUNG SEMICONDUCTOR

402

IRF9120/9121/9122/9123
IRFP9120/9121/9122/9123
IRF9520/9521 19522/9523

P-CHANNEL
POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

Typ

-

-

-6.0

A

IRF9122/3
IRFP9122/3
IRF9522/3

-

-

-5.0

A

IRF9120/1
IRFP9120/1
IRF9520/1

-

-

-24

A

IRF9122/3
IRFP9122/3
IRF9522/3

-

-

-20

A

IRF9120/1
IRFP9120/1
IRF9520/1

-

-

-6.3

V

Tc=25°C, Is=-6.0A, VGS=OV

IRF9122/3
IRFP9122/3
IRF9522/3

-

-

-6.0

V

Tc=25°C, is=-5.0A, VGS-OV

-

ns

TJ=150°C, IF=-6.0A, dIF/dt=100Alj.tS

ISM

Diode Forward Voltage (2)

VSD

trr

Reverse Recovery Time
Notes:

Min

.IRF9120/1
1RFP9120/1
IRF9520/1

Type

ALL

Max Unita

Teat Conditions

_ _ MOSFET "",..
showing the integral
reverse P-N junction rectifier

Q[J
s

G

(1) TJ=25°C to 150°C (2) Pulse test: Pulse width.. 300,..s, Duty Cycie.-2%
(3) Repetitive rating: Puise width limited by max. junction temperature
1.25

40

1
>

5

1.15

-

L. f-""

~

..,../
./

0
5

""

II

'\..

\~

V

\

~

~

5

[\.
I\.

0.75

a

-40

40
80
120
TJ, JUNCTION TEMPERATURE (OC)

o

160

Breakdown Voltage Vs. Temperature

20

40
60
80
100
120
Te, CASE TEMPERATURE (OC)

140

160

Power Vs. Temperatura Derating Curve
2.0

2. 5

iii

I

:E

:a::

0

~
w

V
/

5

....,...

V ""'-1DV

~

V

ill
w

a:

.~
./

1.6

CJ
Z

1.2

z

0
w

/'

J

CJ

a: 0.8

::>

..,../

vr T--

V

~

~

Voa =-1GV
10 ""-3.6"

C 0.4
a:

2

"f

~

a
-40

"

0:

0
40
80
120
TJ, JUNCTION TEMPERATURE (OC)

Normalized On-Resistance Vs. TamDerature

c8SAMSUNG SEMICONDUCTOR

160

0

5

-

10
15
20
I.. DRAIN CURRENT (AMPERESj

25

Typical On-Resistance VI. Drain Current

403

IRF9130/9131/9132/9133
IRFP9130/91311913219133
IRF95301953119532/9533'

P-CHANNEL
. POWER MOSFETS

Preliminary Specifications

- 100 Volt, 0.30 Ohm SFET

PRODUCT SUMMARY
.Vos

RDS(on)

ID

IRF/IRFP9130. IRF9530

~100V

0.300

-12A

IRFIIRFP9131. IRF9531

-60V

0.300

-c12A

IRFIIRFP9132. IRF9532 -100V

0.400

-10A

IRFIIRFP9133. IRF9533 . -60V

0.400

-10A

PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•

Part Number

Pari Number

Package Type

Low RoS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low Input capacitance
Extended safe operating area
Im'proved high temperature reliability

TO-3

IRF9130/9131/91.32/9133

TO-3P

IRFP9130/9131/9132/9133

TO-220

IRF9530/9531 19532/9533

MAXIMUM RATINGS

'.

IRFIIRFP
Characteristic

Symbol

9130
9530

9131
9531

9132
9532

9133
9533

Unit

Voss

-100

-60

·-100

-60

Vdc

.VOGR

-100

-60

-lOO

-60

Drain-Source Voltage (1)
Drain-Gate Voltage (RGs= 1 .mAO) (1)
Gate-Source Voltage

±20

VGS

Vdc
Vdc

Continuous Drain Current Tc=25·C

10

-12

-12

-10

-10

Continuous Drain Current Tc= 100· C

10

-7.5

-7.5

-6.5

-6.5

Adc

Drain Current-Pulsed (3)

10M

-48

-48

-40

-40

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power DissipatiQn @ Tc=25·C
Derate above 25·C

Po

75
0.6

W/·C

TJ. Tstg

-55 to 150

·C

TL

300

·C

Operating and Storage .
Junction Temperature Rangy
Maximum Lead Temp. for Soldering
Purposes. 1/8" from case for 5 seconds

·Adc

Watts

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse widthIO(on)XROS(on) max., VGS= -1 OV

VGs=-10V,10=-6.5A

-

-

-

ALL
ALL

Reverse Transfer Capacitance

Crss

ALL

Tum-On Delay Time

td(on)

ALL

Tr

ALL

td(oll)

ALL

t,

ALL

Qg

ALL

Gate-Source Charge

Qgs

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Test Conditions

nA VGS=-20V

A

2.0

Ciss

Total Gate Charge
(Gate-Source Plus Gate-Drain)

-

ALL

Coss

Fall Time

Units

g,s

Input Capacitance

. Tum-Off Delay Time

Max

10(on)

Output Capacitance

Rise Time

Typ

-

IAFP913011 -12
IAF953011
IAF913213
IRFP9132/3 -10
IAF9532/3
IRF913012
IRFP9132/2
Static Drain-Source On-State
IRF9530/2
ROS(on)
IAF913113
Resistance (2)
IRFP91311
IRF9531 13
On-State Drain-Source
Current (2)

(Tc=25°C unless otherwise specified)

Min

IRF9130/2

Drain-Source Breakdown
Voltage

P-CHANNEL
POWER MOSFETS

-

450

pF

200

pF

60

ns

140

ns

Vos>lo(o~)XRDS(on) msx., 10=-6.5A

VGs=OV, Vos=-25V, f=1.0MHz

140

. Voo=0.5BVoss, lo=-6.5A, Zo=50n
(MOSFET switching times are essentially
ns independent of operating temperature.)

140

ns

45

nC

-

20

nC

-

25

nC

VGs=-15V, 10=-15A, Vos=O.B Max.
Rating (Gate charge is essentially independent
of operating temperature. )

THERMAL RESISTANCE.

-

-

1.67

1.0

-

K/W Mounting surface flat, smooth, and greased

IRFPXXXX
IRF95XX

.-

-

BO

K/W Free Air Operati,on

IRF91XX

-

-

30

Junction-to-Case

RttlJC

ALL

Case-to-Sink

Rlhcs

ALL

RttlJA

Junction-to-Ambient

KIW

I

1.15

~r05

/

uc

~~0.95

V

V

..."..

i""'"

q;

~

5
!
z

~

Q.

iii

. /V

"':Ii

i1§

-

70

"\.

~

60

,'\

50

'\

40

~

til

is

'"

~

IIJ

~

30

'\.

Q.

cl

20

Q.

0.85

B·

10

j;'

,

'\.
\.

0.75
-40

0

40

80

120

20

160

40

60

80

100

120

140

Tc, PASE TEMPERATURE (OC}

TJ, :JUNCTION TEMPERATURE ('C}

B_kdown Voitaga Vs. Temperatura

Power Vs. Temperature Derating

160

.
Cu~

1.0

2.5

q;
:Ii

:I:

e

v
V

2.0

z~

~
ill

1.5

~
./

1.0

..,;

'"o.
z

V

'"

'"
.~

V

0.5

i

40

II

80

120
T... JUNCTION TEMPERATURE ('e)

Normalized On-Reslslance Va. Temperature

.c8SAMSUNG SEMICONDUCTOR

0.4

0.2

-

-"

L

v~--2bv

- ;;;I---

I

\
0

0.6

0

Vos=-10V

1o"'-6.5A

o

VGS=-10V

~

;<'

-40

0.8

160

'"

o

-10

-20'

-30

4()

ID, DRAIN CURRENT (AMPERES}
Typical o.~eSISlanCe Vs. Drain Currenl

50

IRF9140/9141/9142/9143
IRFP9140/9141/9142/9143
IRF9540/95411954219543

P-CHANNEL
POWER MOSFETS

Preliminary Specifications
-100 Volt, 0.2 Ohm SFET

PRODUCT SUMMARY
Part Number

ID

0.20

-19A

IRFIIRFP9141, IRF9541

-60V

0.20

-19A

IRF/IRFP9142, IRF9542 -100V

0.30

-15A

IRFIIRFP9143, IRF9543

0.30

-15A

VDS

-60V

--

PACKAGE STYLE

FEATURES

Package Type

• Low RDS(on)
• Improved inductive ruggedness
•
•
•
•
•

RDS(O"t

IRF/IRFP9140, IRF9540 -100V

i

Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended saf~ operating area
Improved high temperature reliability

I

Part Number

TO-3

IRF9140/9141/9142/9143

TO-3P

IRFP91 40/91 41/91 42/91 43

TO-220

IRF9.540/9541 19542/9543

MAXIMUM RATINGS
IRF/IRFP
Symbol

9140
9540

9141
9541

9142
9542

9143
9543

Unit

Drain-Source Voltage (1)

Voss.

-100

-60

-100

-60

Drain-Gate Voltage (RGs= 1 .OMU) (1)

VOGR

lUU

-OU

Vdc
vec

Gate-Source Voltage

VGS

Characteristic

Continuous Drain Current Tc=25 DC
Continuous Drain Current Tc=100DC

-100

-ou

±20

Vdc

10

-19

-19

-15

-15

Adc

. 10

-12

-12

-10

-10

Adc

-76

-76

-60

-60

Adc

Drain Current-Pulsed (3)

10M

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25 DC
Derate above 25 DC

PD

125
1.0

Watts
W/DC

TJ, Tstg

-55 to 150

DC

TL

300

DC

Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds
Notes: (1) TJ=25 DC to 150 DC

.

c8

. (2) Pulse test: Pulse width .. 300,..s, Duty Cycre.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

SAMSUNG SEMICONDUcrOR

.407

. ;,

IRF9140)9141/9142/9143
IRFP9140/9141/9142/9143
IRF954.0/9541 19542/9543
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol Type

Min

IRF9140/2
IRFP9140/2 -100
IRF9540/2
BVoss
IRF9141 13
IRFP9141 12 -60
IRF9541/3
VGS(th)

ALL

-2.0

Gate,Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

Zero Gate Voltage
Drain Current

On-State Drain-Source
Current(2) .

ALL

loss

10(on)

IRF9140/1
IRFP9140/1 -19
IRF9540/1
IRF9142/3
IRFP91421 -15.
IRF9542/3

IRF9140/1
IRFP9140/1
Static Drain-Source On-State
IRF9540/1
ROS(on)
IRF9142/3
Resistance (2)'
IRFP9142/3
IRF9542/3

Max

Units

-

-

V

VGs=OV

-

-

V

10=-250"A

V

Vos=VGS.10=-250"A

-4 ..0
-100
100

Test Conditions

nA VGs=-20V
nA VGS=20V

-250

"A Vos=Max. Rating. VGs=OV

-1000

"A Vos=Max. RatingxO.8, VGS=OV. Tc=125°C

-

-

A

-

-

0.2

0

-

-

0.3

0

Vos>IO(on)XROS(on) max .• VGs= -1 OV

VGs= -1 OV, 10= -1 OAo

g,s

ALL

CiSS

ALL

Output Capacitance

Coss

ALL

Reverse Transfer CapaCitance

C,ss

ALL

Turn-On Delay Time

id(o~)

ALL

I,

ALL

id(oll)

ALL

-

t,

ALL

Total Gate Charge
(Gate-Source !'Ius Gate-Drain)

Qg

ALL

Gate-Source Charge

Q go

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

Fall Time

Typ

A

Forward Tr,arisconductance (2)

Turn-Off Delay Time

(Tc=25°C unless otherwise specified)

-

Input Capacitance

Rise Time

P-CHANNEL'
POWER'MOSFETS

5.0

-

Vos>IO(on)XROS(on) max .• 10= -lOA

1300

pF

700

p~

400

pF

30

ns

15

ns

...i

20

ns

-

-

12

ns

-

-

90
30

nC VGs=-15V.10=-24A. Vos=0'.8 Max.
Rating (Gate charge is essentillily independent
nC of operating temperature.) .

60

nC

VGfj=OV, Vos= -25V. f= 1.0MHz

Voo=0.5BVoss. 10=-10A. Zo=4.70.
(MOSFET switching times are essentially
independent of operating temperature.)

THERMAL RESISTANCE \
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthcS

ALL

Junction-to-Ambieni

RthJA

IRFPXXXX
IRF95XX
IRF91XX

-

-

1.0

K/W

p.l

-

K/W Mounting surface flat. smooth. and greased

-

80

K/W

30

K/W

Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300"s. Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

cIS

SAMSUNG SEMICONDUCTOR.

408

IRF9140191411914219143
IRFP9140191411914219143
IRF9540195411954219543

P-CHANNEL
POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Reverse Recovery Time

trr

Type

Min

Typ

IRF9140/1
IRFP914011
IRF9540/1

Max Units

Test Conditions

-

-

-19

A

IRF9142/3
IRFP9142/3
IRF9542/3

-

-

-15

A

IRF9140/1
IRFP9140/1
IRF9540/1

-

-

-76

A

IRF9142/3
IRFP9142/3
IRF9542/3

-

-

-60

A

IRF9140/1
IRFP9140/1
IRF9540/1

-

-

-4.2

V

Tc=25°C.ls=-19A. VGs=OV

IRF9142/3
IRFP9142/3
IRF9542/3

-

-4.0

V

Tc=25°C. Is=-15A. VGs=OV

ALL

-

-

ns

TJ=150°C. IF=-19A. dIF/dt=100Al,..s

Mo"'' ' MOSFET .,m"'" [~

showing the integral
reverse P-N junction rectifier

G _____.s__

.-

._- -

-

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width .. 300,..s. Duty Cycle.. 2%
(3) Repetitive ratinQ: Pulse width limited by max. junction temperature
160

1.25

~

I

~i~1.05

~i

./

St':i
6~0.95

i

I

I

140
1.15

../

/

V '"

,/"

~

~

120

Z
0

100

~

-

.....

"- I\..
"-

i=

::

,/"

,/'

0.85

iiiis

80

w

'"~
...0

60

~

40

""t'\..

20

0.75
-40

0

40

80

120

20

160

60

80

100

120

"

140

TJ. JUNCTION TEMPERATURE (OCI

Tc. CASE TEMPERATURE (OCI

Breakdown Voltage Vs. Temperature

Power Vs. Temperature Derating Curve

180

036

2.5

./

.

40

"t'-...
""I\..."-

.-- . . .V

V
./

/

"

'"

Ie
~

j

m0.2'

I

'"

·z
o

V

~

§

Vas =-10V
ID=-10A

°1
V

VGS=- 1

030

0.18

-

..... /

!

Vos=-20V,

~

~ 012

D

,

I

"'006

o

20

40

60

80

100

ID. 'DRAIN CURRENT (AMPERESI

Typical On-Resistance Vs. Drain Current

c8'SAMSUNG SEMICONDUCTOR

409

P..CHANNEL·
POWER MOSFETS

IRF9610/9611/9612/9613
Preliminary Specifications .

PRODUCT SUMMARY

- 200 Volt, 3.0 Ohm SFET

Vos

RDS(on)

ID

IRF9610

-200V

3.00

-1.75A

IRF9611

-150V

3.00

-1.75A

IRF9612

-200V

4.50

-1.5A

IRF9613

-150V

4.50

-1.5A

PACKAGE STYLE

FEATURES
•
•
•
•
•
•
•

Part Number

Low ROS(on)
Improved Jnductive ruggedness
Fast switching times
Rugged polysillcon gate cell structure
Low Input ·capacitance
Extended safe operating area
Improved high temperature reliability

Package Type

Part Number

TO-220

IRF961 0/9611 /9612/9613

MAXIMUM RA TlNGS
IRF
Characteristic·

Symbol

9610

9611

9612

9613

. Unit

Drain-Source Voltage (1 )

Voss

-200

-150

-200

-150

Vdc

Drain-Gate Voltage (RGs=1.0MU)(1)

VOGA

-200

-150

-200

-150

. Vdc

Gate-Source Voltage

VGS
10

-1.75

-1.75

-1.5

-1.5

Adc

Continuous Drain Current Tc=1 OO°C

10

-1.0

-1.0

-0.9

-0.9

Adc

Drain Current-Pulsed (3)

10M

-7.0

-7.0

-6.0

-6.0

Adc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25 ° C

Po

20
0.16

Watts
W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Continuous Drain Current Tc=25°C

Operating and Storage
Junction Temperature Range
Maximum Lead TeIT!P. for Soldering
Purposes, 1/8" from case for 5 seconds

±20

Vdc

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width"300,..s, Duty CyclelEt2%
.
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

410

P-CHANNEL
POWER MOSFETS

IRF9610/9611/9612/9613
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Symbol

BVoss

Type

(Tc=25°C unless otherwise specified)

Min

Typ

IRF9610
-200
IRF9611

-

IRF9612
-150
IRF9613

-

Max

-

Test Conditions

Units

V

VGs=OV

V

10=-250,..A

V

Vos=VGs. 10=-250,..A

VGS(thl

ALL

-2.0

-

-4.0

Gate-Source Leakage Forward

IGSS

ALL

-

-

-100

Gate-Source Leakage Reverse

IGSS

ALL

-

-

100

ALL

-

-

-250

,..A Vos=Max. Rating. VGs=OV

-

-1000

,..A Vos=Max. RatingXO.B. VGS=OV. Tc=125°C

IRF9610
-1.75
IRF9611

-

-

A

IRF9612
-1.5
IRF9613

-

-

A

-

-

3.0

0

-

-

4.5

Il!

Gate Threshold Voltage

---

Zero Gate Voltage
Drain Current

On-State Drain-Source
Current (2)

loss

10(onl

IRF9610
IRF9611
Static Drain-Source On-State
ROS(onl
ReSistance (2)
IRF9612
IRF9613
Forward Transconductance (2)

-

-

0

-

-

300

pF

100

pF

35

pF

15

ns

25

ns

Ciss

ALL
ALL

Reverse Transfer Capacitance

Cros

ALL

Turn-On Delay Time

td(on)

ALL

tr

ALL

td(Off)

ALL

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

Gate-Source Charge

Q gs

ALL

Qgd

ALL

Fall Time

Gate-Drain ("Miller") Charge

max .•

VGS= -1 OV

VGs=-10V.10=-0.9A

0.9

Coss

VGs=20V

Vos>IO(onIXROS(onl

ALL

Input Capacitance

Turn-Off Delay Time

nA

gfs

Output Capacitance

Rise Time

nA VGs=-20V

-

15

ns

15

ns

11

nC

4

nC

7

nC

6.4

K/W

Vos>lo(onIXROS(onl

max .•

I

10= -0.9A

VGS:=OV. VOS= -25V. f= 1.0MHz

Voo=0.5BVoss.10=-1.5A. Zo=505
(MOSFET switching times are essentially
Independent of operating temperature.)

VGs=-15V. 10=-3.5A. Vos=O.B Max.
Rating (Gate charge is essentially independent
of operating temperature. See Fig. B page 21

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RihCS

ALL

Junction-to-Ambient

RthJA

ALL

-

1.0

-

K/W Mounting surface flat. smooth. and greased

-

BO

K/W Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse width<300Ils. Duty Cycle.. 2%
(3) Repetitive rating: Plilse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

411

P-CHANNEL
POWER ·AfOSFETS

IRF961 019611"1961219613

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse Source Current
(Body Diode)(3)

ISM

Diode Forward Voltage (2)

Vso

Type

Min

Typ

Max

Units

IRF9610
IRF9611

-

-

-1.75

A

IRF9612
IRF9613

-

-

-1.5

A

IRF9610
IRF9611

-

-7.0

A

IRF9612
IRF9613

-

-

-6.0

A

IRF9610
IRF9611

-

-

-5.8

V

IRF9612
IRF9613

-

-

-5.5 I V

Test Conditions

_jed MOSFCr..,",
showing the integral .
reverse P-N junction rectifier

I ~. I
G

s

!

Tc=25°C, Is=.l..1.75A, VGS=OV
Tc=25°C, Is=-1.5A, VGs=OV

Reverse Recovery Time
ALL
trr
ns TJ~150°C, iF=-1.75A, dIF/dt=100N"s
Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse width"300"s, Duty CYG-le.. 2%
(3) Repetitive rating: Pulse width limited· by max. junction temperature
20

125

!

> 115

..~Of.05

;,. V

~
IU:::J

uc

§I

I

~~095

~

l,....o-' I-'

i"

./

V

I-"'"

l

i

V

r'\

10

~

~

'\

,f

o

40

80

120

180

'\

5

o

~
~

~o

40

60
80
100
120
Tc. CASE TEMPERATURE (OC)

TJ. JUNCTION TEMPERATURE (OC)

140

160

Power Vs. Temperature Derating Cur.e

Breakdown Voltage Vs. Temperature

0

2. 5

0

V

7

V

6

5

/'"
./

0

5

\

ffi

0.85

-40

~

o
~

........

0.7 5

15

·z

~

i

'\

~

5

/'

/

4

./ ~

3

V

~ r-::::

L
........

L

/'

2

VG.~=-10V

1o='-09A

1

0
-40

a

40
80
120
TJ. JUNCTION TEMPERATURE (OCr

Normalized On-R!lSistance Vs. Temperature

c8

SAMSUNG SEMICONDUCTOR.

160

o

-1

-2

-3 -4
-5
6
7
8
10. DRAIN CURRENT (AMPERES)

10

Typical On-Resistance VI. Drain Current

412

IRF9220/9221 19222/9223
IRFP9220/9221 19222/9223
IRF9620/9621 19622/9623

P-CHANNEL
POWER MOSFETS

Preliminary Specifications
PRODUCT SUMMARY

- 200 Volt, 1.5 Ohm SFET

Part Number

Vos

.IRF/IRFP9220, IRF9620 -200V

ROS(onl

10

1.50

-3.5A

- - - - - - - - - - - - - -- - - - ------- --- -- -

IRF/IRFP9221, IRF9621

-150V

- - - - - - - - - - ----

IRF/IRFP9222, IRF9622 -200V

1.50
2.40

IRF/IRFP9223, IRF9623 -150V

•
•
•
•
•
.•
•

-3.0A
----------

-----_ ... - - - - - - - - -

FEATURES

-3.5A

----

2.40

-3.0A

PACKAGE STYLE

Low RDS(on)
Improved Inductive ruggedness
Fast switching times
Rugged polysllicon gate cell structure
Low Input capacitance
Extended safe operating area
Improved high temperature reliability

Part Number

Package Type

IRF9220/9221 19222/9223

TO-3

IRFP9220/9221 19222/9223

TO-3P
--1--

IRF9620/9621 19622/9.623

TO-220

I

MAXIMUM RATINGS
IRFIIRFP
Characteristic
Drain-Source Voltage (1)

Symbol

Drain-Gate Voltage (RGS= 1.0MO) (1)

Voss
VDGR

Gate-Source Voltage

VGS

9220
9620

9221
9621

9222
9622

-200
-150
-200- '-- -150

9223
9623

Unit

-200

-150

Vdc

-200

-150

Vac

-3.0

-3.0

±20

Vdc

Continuous Drain Current Tc=25°C

10

-3.5

-3.5

Continuous Drain Current Tc= 1 00 ° C

10

-2.0

-2.0

-1.5

-1.5

Adc

Drain Current-Pulsed (3)

10M

-14

-14

-12

-12

Mc

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above .25°C

Po

40
0.32

Watts
W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
JUllction Temperature Rangy
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds

Adc

Note.: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widtM300,.s, Duty Cycle~2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

.413

IRF9220192211922219223

IRFP9220192211922219223
IRF9620196211962219623
ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Type

P·CHANNEL
POWER MOSFETS
(Tc=25°C unless otherwise specified)

Min

Typ

Max

IRF9220/2

Drain-Source Breakdown
Voltage

BVoss

IRF9221/3
IRFP922113 -150
IRF962113

,
Gate Threshold Voltage

, 1RFP9220/~ -200 IRF9620/2

-2,0

VGS(th)

ALL

Gate,Source Leakage Forward

IGSS

ALL

-

Gate-Source Leakage Reverse

IGSs

ALL

~

'.

-

Forward Transconductance (2)

ALL
ALL

Reverse Transfer Capacitance

C rss

ALL

Turn~On Delay Time

td(on)

ALL

Ir

ALL

td(off)

ALL

Ris.e Time
Turn-Off Delay Time

-

tf

ALL

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Fall Time

Qg

ALL

Gate-Source Charge

Q ge

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

V

Vos=VGS, 10 = - 250/-iA

-100

nA

VGs=-20V

100

nA VGs=20V

A

-

-

A

-

-

1.5

0

-

-

2.4

0

-

0

400

pF

125

pF

45

pF

40

ns

50

ns

50

ns

40

ns

22

nC

9

nC

13

nC

K/W

Vos>IO(on)XROS(on) max., VGS= -1 OV

VGs=-10V,10=-1.5A

-

Ci ••

-4,0

-

-

1.0

Cos.

.-

Vos=Max, RatingXO.8, VGs=OV, Tc=125°C

ALL

Input Capacitance

10=-250/-iA

Vos=Max, Rating, VGs=OV

gf.

Output Capacitance

V

/-I A

On-State Drain-Source
Current (2)

f'lOS(on) ~11
IRF9222/3
IRFP922213
IRF9622/3

VGs=OV

-1000

IRF9220/1
IRFP9220/1 -3,5
. IRF9620/1
10(on)
IRF9222/3
IRFP9222/3 -3,0
IRF9622/3
IRF9220/1
IRFP9220/1

V

/-I A

loss

Static Drain-Source On-State
Resistance (2)

-

Test Conditions

-:-250

Zero Gate Voltage
Drain Current

·ALL

-

-

Units

-

--

VoS>IO(on)XROS(on) max" 10= -1 ,5A

VGs=OV, Vos=-25V, 1=1 ,0MH:z:,

Voo=0,5BVoss, 10=-1.5A, Zo=500,
(MOSFET switching times are essentially
Independent of operating temperature,)

VGs=-15V, 10=-4,OA, Vos=0.8 Max.
Rating (Gate charge is essentially independent
of operating temperature. )

THERMAL RESISTANCE
Junction-1o-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

Junction-to-Ambient

RthJA

IRFPXXXX
IRF96XX\
IRF92XX

-

-

3.12

1.0

-

K/W Mounting surface flat, smooth, and .greased

-

80

K/W

30

K/W

Free Air Operation

Notes: (1) TJ=25°C to 150°C
(2), Pulse test: Pulse width4;;300/-lS, Duty Cycle4;;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

414

IRF9220192211922219223
IRFP9220192211922219223
IRF9620196211962219623·

P-CHANNEL
POWER. MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

Continuous Source Current
(Body Diode)

Is

Pulse· Source Current
(~ody Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Type

Min

IRF9220/1
IRfP9220/1
IRF9620/1

Typ Max Units

Tes_ Conditions

-

-

-3.5

A

IRF9232/3
IRFP9232/3
IRF9622/3

-

-

-3.0

A

IRF9220/1
IRFP9220/1
IRF9620/1

-

-

-14

A

IRF9232/3
IRFP9232/3
IRF9622/3

-

-

-12

A

IRF9220/1
IRFP9220/1
IRF962011

-

-

-7.0

V

Tc=25°C. Is=-3.5A. VGs-='OV

IRF9232/3
IRFP9232/3
IRF9622/3

-

-

-6.8

V

Tc=25°C. Is=-3.0A. VGs=OV

M_'"

MOOFET . , -

showing the integral
reverse P-N junction rectifier

~
G

.

s

-

Reverse Recovery Time
ALL
ns TJ=150°C. IF=-3.5A. dIF/dt=100Al"s;
t"
Notes: (1) TJ=25°C to 150°C
(2) Pulse test: Pulse widtM300,.s. Duty CycleE;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
1.25

!
>

40

,.. .....

~~.
ID~
w::i

,..V

<>"
!!il

~~0.95

I

"

II

'\.

i-""'"
~

~i!il.05

i

~

5
1.15

..... V

\

I\.

\

V

"

~

0.85

0.75
40

0

40

80

120

160

20

40

60

100

80

120

I\.

1 Co

TJ. J\lNCTION TEMPERATURE (Oc)

Te. CASE TEMPERATURE (OC)

Breakdown Voltage Va. Temperature

Power Va. Temperature Derating Curve

180

2.5

i

V

I

/
.;,; /'

r-

l/

I

...... V

I

2

1

I

SAMSUNG SEMICONDUCTOR

169

I

If

...

-

o

V

....-: ~

-

a:
0
40
80
120
TJ. JUNCTION TEMPERATURE (Oc)

Normalized On-fleslstance Vs. Temperature

c8

Vos~-1OV

3

~

VGS ""-1OV
ID =-15A

·0
-40

4

4

-8

./
VGS--2OV

-12

-16

20

I.. DRAIN CURRENT (AMPERES)

Typical On-R••lstance Va. Drain Current

415

IRF9'230/9231 19232/9233
IRFP9230/9231 19232/9233
IRF9630/9631 19632/9633

P-CHANNEL'
POWER MOSFETS

Preliminary Specifications
PRODUCT SUMMARY

- 200 Volt, 0.8 Ohm SFET

ROS(on)

10

IRF/IRFP9::130, IRF9630 -200V

0.80

-6.5A

-150V

0.80

-6.5A

IRFIIRFP9232, IRF9632 -200V

1.20

-5.5A

1.20

-5.5A

Vos

Part Number

.-

IRFIIRFP9231, IRF9631

--~-

IRF/IRFP9233, IRF9633 -150V

PACKAGE STYLj:
FEATURES
•
•
•
•
•
•
.•

Part Number

Package Type

Low RDS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability

!

IRF9230/923119232/9233

TO-3

---

IRFP9230/9231 19232/9233

TO-3P

- - - - - - - ------

IRF9630/9631 19632/9633

TO-220

MAXIMUM RATINGS
IRF/IRFP
Characteristic

Symbol

9230
9630

9231
9631

Voss
VOOR

-200

-150

-200

-150

10

-6.5

Drain-Source Voltage (1)
. Drain-Gate Voltage (RGs= 1.0MO) (1)
Gate-Source Voltage

9232
9632

Continuous Drain Current Tc=100°C

---

-150

-t---.

-

Unit

Vdc

-

-200

-150

-6.5

-5.5

-5.5

-4.0

-3.5

-3.5

Adc

":26

-22

-22

Adc

±20

VGS

Continuous Drain Current Tc=25°C .

-200

'-

9233
9633

Vdc
Vdc
Ad6

10

-4.0

Drain Current-Pulsed (3)

10M

-26

Gate Current-Pulsed

IGM

±1.5

Adc

Total Power Dissipation @ Tc=25°C
Derate above 25°C

Po

.,75
0.6

Watts

W/oC

TJ, Tstg

-55 to 150

°C

TL

300

°C

Operating and Storage
Junction Temperature Rangy
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5 seconds
Notes: (1) TJ=25°C to 150·C

(2) Pulse lest: Pulse width":300"s, Duty Cycle":2%
(3) Repetitive rating: Pulse width limited by max. jiJnction temperature

c8

SAMSUNG SEMICONDUCTOR

416

IRF9230/9231 19232/9233
IRFP9230/9231 19232/9233
IRF9630/9631 19632/9633
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

Gate Threshold Voltage

Symbol

Type

P-CHANNEL
POWER MOSFETS
(Tc=25°C unless otherwise specified)

Min

IRF9230/2
IRFP9230/2 -200
IRF9630/2
BVoss
IRF9231 13
IRFP923113 -150
IRF9631 13
VGS(th)

ALL

-2.0

Gate-Source Leakage Forward

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

-

Zero Gate Voltage
Drain Current

On-State Drain-Source
Current (2)

Static Drain-Source On-State
Resistance (2)

Forward Transconductance (2)

loss

10(on)

ALL

IRF9230/1
IRFP9230/1 -6.5
IRF9630/1

IRF9232/3
IRFP9232/3 -5.5
IRF9632/3
IRF9230/1
IRFP9230/1 -'
IRF9630/1
ROS(on)
IRF9232/3
IRFP9232/3
IRF9632/3

-

gts

ALL

2.2

Input Capacitance

C;ss

ALL

-

Output Capacitance

Coss

ALL

Reverse Transfer Capacitance

C rss

ALL

Turn-On Delay Time

td(on)

ALL

t,

ALL

td(off)

ALL

Fall Time

·tt

ALL

-

Total Gate Charge
(Gate-Source Plus Gate-Drain)

Qg

ALL

-'

Gate-Source Charge

Qgo

ALL

Gate-Drain ("Miller") Charge

Qgd

ALL

-

Rise Time
Turn-Off Delay Time

<

Typ

Max

Units

Test Conditions

-

-

V

VGs=OV

-

-

V

10=-250"A

-4.0

V

Vos=VGs. Ip=-250"A

-100

nA

VGs=-20V

100

nA

VGs=20V

-250

"A

Vos=Max. Rating. VGs=OV

-1000

"A

Vos=Max. RatingXO.B. VGS,:"OV. Tc=125°C

-

A

-

A

O.B

0

Vos>IO(on)XROS(on) max .• VGs=-10V

-'
-

VGs=-10V.10=-3.5A

-

1.2

0

-

0

650

pF

300

pF ' VGs=OV. Vos=-25V. f=1.0MHz

I

Vos>IO(on)XROS(on) max .• 10= -3.5A

--

90

pF

50

ns

100

ns

100

ns

80

ns

45

nC

20

nC

25

nC

1.67

K/W

Voo=0.5BVoss. 10=-3.5A. Zo=500.
(MOSFET switching times are essentially
independent of operating temperature.)

VGs= -15V. 10= -B.OA. Vos=O.B Max.
Rating (Gate charge is essentially independent
of operating temperature.)

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

'-

-

Case-to-Sink

RthcS

ALL

1.0

-

K/W Mounting surface flat. smooth. and greased

IF\FPXXXX
IRF96XX

-

BO

K/W

IRF92XX

-

-

30

K/W

Junction-to-Ambient

RthJA

Free Air Operation

Notes: (1) TJ=25°C to 150·C
(2) Pulse test: Pulse width"300"s. Duty Cycle.. 2%
(3) Repetitive rating; Pulse width limited by max. junction temperature

c8SAMSUNG SEMICONDUCTOR

417

IRF9230192311923219233
lRFP92301923119232/9233
IRF9630196311963219633

P-CHANNEL
POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characterlsti~

Symbol

Continuous Source Current
. (Body Diode)

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

Reverse Recovery Time

Type

Min

Typ

IRF9230fl
IRFP9230fl
IRF9630fl

-

-

-6.5

A

IRF92:i2f3
IRFP9232f3
IRF9632f3

-

-

-5.5

A

IRF9230fl
IRFP9230fl
IRF9630fl

-

-

-26

A

IRF9232f3
IRFP9232f3
IRF9632f3

-

-

-22

A

IRF9230fl
IRFP9230fl
IRF9630fl

-

-

-6.5

V

Tc=25°C, Is=-6.5A, VGs=OV

IRF9232f3
IRFP9232f3
IRF9632f3

-

-

-6.3

V

Tc=25°C,ls=-5.5A,VGs=OV

-'

ns

TJ= 150°C, IF= -6.5A, dIF/dt= 1 OOA/"s

ALL

trr

Max Units

Test Conditions
;

Mo~.d

~- G~~-

MOSFET
showing the
integral
reverse P-N junction rectifier

G

s

Notes: (1) TJ=2!)OC to 150°C (2) Pulse test: Pulse width';;300"s, Duty CycJe';;2%
(3) Reoetitive ratina: Pulse width limited by max. junction temperature
1.25

80

I-70

iii

....... ~

.,...,..

S
!

. , /V

.....
.,/

z

0

60

"'"'r\.

''\

50

C

0-

iii

40

'"w
~

30

I\.

,~

;::

~

"'Q

./

V

~

5

20

~

r\.,

10

'\.

0.7 5
-40

o

40

80

120

20

160

Ii
w

./

1.5

:o~

~~
.... ::&

:1:'"

~i
c

g

. /V

1.0

.."..

V

0.5

'"
o

-40

140

160

1.6

I

0
Z

~

Hi

L

12

'0Z"

/'

Vas=-10V

w

-

0

'"
~

:0

,/'

i'"

0
40
80
120
. TJ, JUNCTION TEMPERATURE (OC)

SAMSUNG SEMICONDUCTOR

-

0.8

./

04

"';;

Vos=-10V
10--3 SA

Normalized On-'t4eslstance Vs. Temperature

'c8

~
w

V

.,/

;;

120

:I:

'"0Z
"'"',

100

if

I
l-

w

0_

80

20

2.5
w
0
Z
2.0

60

Tc, CASE TEMPERATURE ("C)
Power Vs. Temperature Derating Curve

TJ. JUNCTION TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

C

40

V

/ ' ....... ~
Voo=-20A

~

160

'"

'0

5

10
15
20
10, DRAIN CURRENT (AMPERES) .

Typical On-Reslstance Vs. Drain

25

Curr~nt

418

IRF9240/9241 19242/9243
IRFP9240/9241 19242/9243
IRF9640/9641 19642/9643

P-CHANNEL
POWER MOSFETS

Preliminary Specifications
PRODUCT SUMMARY
- 200 Volt, 0.5 Ohm SFET

ROS(onl

10

IRF/IRFP9240, IRF9640 -200V

0.50

-llA

-150V

0.50

-llA

IRF/IRFP9242, IRF9642 -200V

0.70

-9.0A

IRF/IRFP9243, IRF9643 -150V

0.70

-9.0A

Part Number

Vos

IRFIIRFP9241, IRF9641

_.

PACKAGE STYLE

'FEATURES
•
•
•
•
•
•
•

.

Package Type

Low ROS(on)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability

Part· Number

TO·3

IRF9240/9241 19242/9243

TO-3P

IRFP9240/9241 19242/9243

TO-220

IRF9640/9641 19642/9643

MAXIMUM RATINGS

I

IRFIIRFP
, Characteristic

Symbol

9240
9640

9241
9641

9242
9642

9243
9643

Unit

Vdc
voc

Drain-Source Voltage (1)

Voss

-200

-150

-200

-150

Drain-Gate Voltage (RGs= 1 ,OMO) (1)

VOGA

-200

-150

-200

-150

10

-11

-11

-9,0

-9,0

Adc

-7.0

-6 .. 0

-6.0

Adc

-44

-36

-36

Adc

Gate-Source Voltage
Contirluous Drain Current Tc = 25 ° C

±20

VGS

Vdc

10

-7,0

Drain Current-Pulsed (3)

10M

-44

Gate Current-Pulsed'

IGM

±1.5

Adc

Total Power Dissipation @ Tc.=25°C
Derate above 25 ° C

Po

125
1.0

Watts

W/·C

TJ, Tstg

-55 to 150

·C

TL

300

·C

Continuous Drain Current Tc = 1 00 ° C

Operating and Storage
Junction Temperature Rangy
Maximum Lead Temp, for Soldering
Purposes, 1/8" from case for 5 seconds

Notes: (1) TJ=25·C to 150·C
(2) Pulse test Pulse width .. 300/As, Duty Cycle.. 2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

c8

SAMSUNG SEMICONDUCTOR

419

II

IRF9240192411924219243
IRFP9240192411924219243
IRF9640196411964219643
ELECTRICAL CHARACTERISTICS
Characteristic

Drain-Source Breakdown
Voltage

. Gate Threshold Voltage
Gate-Source Leakage Forward

Symbol Type

VGS(th)

ALL

-2.0

-

IGSS

ALL

Gate-Source Leakage Reverse

IGSS

ALL

Zero Gate Voltage
Drain Current

loss

ALL

On-Stale Drain-Source
Current (2)

Min

IRF9240/2
IRFP9240/2 -200
IRF9640/2
BVoss
IRF9241 13
IRFP9241/3 -150
IRF9641 13

10(on)

IRF9240/1
IRFP9240/1 -11
IRFg640/1
IRF9642
-9.0
IRF9643

IRF9240/1
IRFP9240/1
IRF9640/1
Static Drain-Source On-Stale
ROS(on)
IRF9242/3
Resistance (2)
IRFP9242/3
IRF9642/3

-

V

10=-250"A

-4.0

V

Vos=VGs. lo=-250"A

Test Cbnditions

-

-100

nA VGs=-20V

100

nA VGs=20V

-250

"A Vos=Max. Rating. VGs=OV

-1000

-

"A Vos=Max. RatingXO.8. VGs=OV. Tc:=125°C
A
._- Vos>IO(on)XROS(on) max .• VGS= -1 OV

I}

-

0

1300

pF

450

pF

250

pF

A

VGs=-10V.lo=-6.0A

Co••

ALL

Reverse Transfer Capacitance

Cr••

ALL

Turn-On Delay Time

Id(On)

ALL

Ir

ALL

td(off)

ALL

It

.ALL

-

Qg

ALL

-

-

ALL

-

0.7

Output Capacitance

ALL

VGs=OV

-

-

Qg.

V

-

ALL

'Qgd

-

I}

Ciss

Gate-Drain ("Miller") Charge

-

0.5

Input Capacitance

Gate-Source Charge

Units

-

4.0

Total Gale Charge
(Gale-Source Plus Gate-Drain)

Max

-

ALL

Fall Time

Typ

-

gt.

Turn-Off Delay Time

(Tc=25°C unless otherwise specified)

-

Forward Transconductance (2)

Rise Time

P-CHANNEL·
POWER MOSFETS

30

Vos>IO(on)XROS(on) max. 10= -6.0A

VGs=OV. Vos=-25V; f=1.0MHz

1---

ns
ns

Voo=0.5BVoss. 10=-6.0A. Zo=4.71}.

18

ns

independenl of operating temperature.)

12

ns

90

nC

15

1--- (MOSFET swilching times are essenlially

- -[ - . -

30
60

VGs= -·1 5V, 10= - 22A, Vos=oO.8 Max.
Rating (Gate charge is essentially inder:/endenl
nC
of operating lemperalure.)
nC

THERMAL RESISTANCE
Junction-to-Case

RthJC

ALL

Case-to-Sink

RthCS

ALL

""unction-Io-Ambient

RthJA

IRFPXXXX
IRF96XX
IRF92XX

-

-

1.0

1.0

-

-

80

KIW

-

30

K/W

K/W
. K/W Mounting surf..ce flat. smooth. and greased
Free Air Operalion

Notes: (1) TJ=25°C to 150°C
(2) Pulse lest: Pulse width"300"s. Duty Cycle"2%
(3) Repetitive rating: Pulse width limited by max. junction temperature

=8

SAMSUNG SEMICONDUCTOR

420

IRF9240/9241 19242/9243
IRFP9240/9241 19242/9243
IRF9640/9641 19642/9643

P-CHANNEL
POWER MOSFETS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic

Symbol

I

. Type

Min

Is

Pulse Source Current
(Body Diode) (3)

ISM

Diode Forward Voltage (2)

VSD

c----

Reverse Recovery"Time

trr

Max Units

Test Conditions

-

-11

-

-- --

-

-9.0

IRF9240/1
IRFP9240/1
IRF9640/1

-

-

-44

A

IRF9242/3
IRFP9242/3
IRF9642/3

-

-

-36

A

IRF9240/1
IRFP9240/1
IRF9640/1

-

-

-4.6

V

Tc=25°C, Is=-11A, VGs=OV

IRF9242/3
IRFP9242/3
IRF9642/3

-

-

-4.4

V

Tc=25°C, Is=-9.0A, VGs=OV

ALL

-

-

-

ns

TJ=150°C, IF= -11 A,dIF/dt=1 OOA/IoiS

-

Continuous Source Current
(Body Diode)

Typ

IRF9240/1
IRFP9240/1
IRF9640/1
- - - - r.-IRF9242/3
IRFP9242/3
IRF9642/3

A

A

"o"i,d "OSFET "mb.

showing the integral
reverse P·N junction rectifier

[~J
G
_. S

Notes: (1) TJ=25°C to 150°C (2) Pulse test: Pulse wldth";300f's, Duty Cycle";2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
160

1.25

II

140

.....
.......

/

",,"

""

""

.....

./

....

S
!

120

z

0

~~

"-

100

~

I
,.

a:
w

...0

~

80

""-

~

""

60

""-

40
20

0
40
80
120
T... JUNCTION TEMPERATURE (OC)

20

160

w

120

140

160

'VGS=-10V

:I:

Q

2.0

~

V
./

z

0

1.5

§::l

0<

61

1.0

!i

.......

... v

0.5

a

-40

./

~

0.8

w

V

u

z

i

w

a:

V

0.6

J

z

0

w
u
a: 0.4
:::>

~...

z
:ca:

02

-

/'

V

c
?

Vos=-1QV
lo=-6A

-

VGS--20V " ,

./

.

........ f-""'

i

a:

a

40
80
120
TJ, JUNCTION TEMPERATURE (OC)

Normalized On-Reslstance Vs. Temperature

=8

100

IiJ

.:1

z

I

80

10

u

a:

60

Power Vs. Temperature Derating Curve

2.5

*~
:c

40

Te, CASE TEMPERATURE (OC)

Breakdown Voltage Vs. Temperature

~~

""

[\..

0.75
-40

~

"

SAMSUNG SEMICONDUCTOR

160

a

-15

30
45
60
ID, DRAIN CURRENT (AMPERES)

75

Typical On-Resistance Vs. Drain Curr.ent

421

NOTES i

)

,.
,i:

TEST CIRCUITS

R

V

V

Ves

Vas

Fig. 1. Test Cricuit for Breakdown Voltage (BVoss) and Drain-Source Current (loss)

•

R,

V

Vos

Fig. 2. Test Crlcuit for Gate-Source Leakage Current (IGss)

c8SAMSUNG SEMICONDUCTOR

425

I

TEST CIRCUITS

V Vos

Fig. 3. Test Circuit for D~ain-Source on-Resistance (RDS(on) .

Hp·4280A
Capacitance
Meter

c,

V
VOl?

Fig. 4. Ciss Test Circuit

c8 SAMSU~G

SEMICONDUCTOR.

426

TEST CIRCUITS

c3
Hp·4280A
Capacitance
Meter

v

c,

C,

VOS

VGS

Fig. 5. Coss Test Circuit

•

c,

V

V VGS

c,

Vos

HP4280A
Capacitance
Meter

Fig. 6. Crss Test Circuit

c8

SAMSUNG SEMICONDUCTOR

427

TEST CIRCUITS

C,

~

A,

PULSE GEN 0
.OUTPUT

300~F

39k

-

0.47~F

A,

R7 10k

10k
47k
A,
3302

C,

CURRENT PROBE

0,

A, .
10k

0,

-

OFFSET ADJ
A,100
A,
1k

0,

c,

Rs

300~FI

-V

-

-15V

Fig. 7, Safe Operating Area Test Circuit (SOA)

Voo

t----Vos
---,
I

.

PULSE GEN. ol>--~-----.-----I
OUTPUT

I

~I

__ JI

=
Fig. 8. Switching Time Test Circuit

=8

SAMSUNG SEMICONDUCTOR

428

TEST CIRCUITS

+15V

.

v

+15V

47

G

v
TEMP. PROBE

-15V

RSENSE

Fig. 9.

RthJA

•

Test Circuit

+18V

100k
47k

Fig. 10. Gate Chargre Test Circuit.

=8

SAMSUNG SEMICONDUCTOR

429

TEST CIRCUITS

VOS
TO SCOP.E

Fig. 11. Clamped Inductive Test Circuit

+lSV.

270K

R.: Duty Cycle
Control

f=2SkHz
1.S K

DUT

a,

To Set O-S Diode Current Is

DRIVER

Adjust RI andlor Vee

-v"

-S.OV

Fig. ~2. Trr Test Crlcuit

c8

SAMSUNG

S~MICONDUcrOR

430

!
I:
I,

I
I

PACKAGE DIMENSIONS
Unit: mm

TO·3(Standard Ty,e)

Unlt:mm

T0-3(Hlgh-Voitage Type)

30.05
30.35

I

19.7
19.9

I

l

J

I
I

19.7
19.9

11

-.-l.

I
l

.J

I

I

~L
1.05

~L
1:05

1. Gate 2. Source Case: Drain

TO.3(Hlgh Current Type)

Unit: mm

1. Gate 2. Source Ca,e: Drain

Unit: mm.

TO-3P

1.95
2.20

1213.20:. 1, ,_ _ _ _"T-T
TYP ....

2.79
3.04
1.75
2.25

---lL145

1.55

1. Gate 2. Source Ca.e: Drain

c8SAMSUNG SEMICONDUCTOR

~:?i

~

"I!t--l
~.45TYP ---'Lj;".....10.87
I~
I

TYP

.

1. Gate 2. Drain 3. Source

433

PACKAGE DIMENSIONS
Unit: mm

TO·220

~.

rr

I

·25
1.25 4 . 75
1.40 1-

TG-128

I

9.68
10.18· 1113.61 TYP

T

r-..f· I-~~""";~

CXl~
C\i"';

..i..
~~

I
1

~~

0.89
1 . 14

~~

1010

2.31
2.61

~I--O.65

~~:.:::5p:;!..4-1--1--1--0.86
123

. 1. Gate 2. Drain 3. Source

.cR

SAMSUNG SEMICONDUCTOR

=' I
11-1

0.45 ----li
0.65 .

L4.57
TYP

L

0.75 TYP
II
2.28 TYP . -11-0.45
0.55

1. Source 2•. Dnlln 3. Gate

434

SAMSUNG SEMICONDUCTOR DISTRIBUTORS
ALABAMA
HAMMOND
4411-B Evangel Circle, N.W.
Huntsville, AL 35816

(205) 830-4764

PETERSON,C.M.
220 AdelaIde Street North
london,Ontario,Canada
N6B3H4

(519) 434-3204

ADDED VALUE
1582 Parkway Loop
UnitG
Tustin, CA 92680

(714) 259-8258

PRELCO
480 Port Royal St. West
Montreal,Quebec,Canada
HSL2B9

(514) 389-8051

ADDED VALUE
8361 Dickers Street
Suite 308
San DIego, CA 92111

(619) 278-1990

WESTBURNE IND.ENT.,LTD.
300 Staeprock Drive
Downsvlew,Ontario,Canada
M3J 2W9

ALL AMERICAN
369 Van Ness Way .701
Torrance, CA 90501

(800),262-1717

CAUFORNIA

(416) 635-2950

COLORADO

BELL MICRO
18350 Mt. langley
Fountain VaUey, CA 92708
BELL MICRO
550 Sycamore Drive
Milpitas, CA 95035

(408) 434-1150

CYPRESSIRPS
6230 Descanso Avenue
Bulll'la Park,CA 90620

(714) 521-5230

(303)

CYPRESSIRPS
12441 West 49th Avenue
Wheal Rldge,CO 80033

(303) 431-2622

CONNEC"nCUT
JACO

CYPRESSJRPS
10054 Mesa RIdge Ct
Sulte118
San Die90,CA 92121

(619)~11

CYPRESSJRPS
2175 Martin Avenue

(408) 980-2500

4~-1701

ADDED VALUE
4090 Youngfield
Wheatridge,CO 80033

(203) 235-1422

364 Pratt SIreet

Meriden, CT 06450
JV
690 Main Street
East Haven,CT 06512

(203) 469-2321

PILGRIM

(203) 792-7274

60 Beaverbrook Road

Santa CIara,Ca 95050

Oanbury,CT 06810
JACOIOISTEL
2890 ZANKER ROAD
SUITE 202
SAN JOSE, CA 95134

(408) 432-9290

JACOIOISTEL

(805) 495-9998

FLORIDA

2?60 Townsgata Road
Westlake VNlage, CA 91361
.PACESETTER
5417 E. La Palma
Anahelm,CA 92807

(714) 779-5855

PACESETTER
543 Weddel DrIve
Sunnyvale,CA 94089

(408) 734-5470

c8

(305) 621-8262

HAMMOND

(305) 973-7103

6800 N.W. 21st Avenue

Fort lauderdaIe,FL 33309

CAflADA
ELECTRONIC WHOLESALERS
1935 Avenue De L'EgHse
Montreal,Quebec,Canada
H4E lH2

ALL AMERICAN
16251 N.W. 54th Avenue
Miaml,FL 33014

HAMMOND
1230 W. Central Blvd
OrIando,FL 32802

(305) 849-8060

GEORGIA
(514) 769-8861

SAMSUNG SEMiCONDUCTOR

HAMMOND
5680 oakbrook Parkway

(404) 449-1996

.160
Norcross,GA 30093

437

SAMSUNG SEMICONDUCTOR DISTRIBUTORS
(Continued)

IMI~A

IWNOIS.
GBLJGooLD
610 Bonnie Lane
Elk Grove Village,lL 60007

/

(312) 593-3220

AI:.l~MEAieAN
_

(612) 884-2220

/:,9IcromIngton Fwy .

Slli1ltt02
Mlnnaapolia,MN 55421

OHM
746 Vermont Avenue
Palatine',IL 60067

(312) 359-5500

QPS
101 Commerce Dr. IIA
SChaumburg,lL 60173

(312) 884-6620

INDIANA
ALTEX
12744 N. Meridian
Carmel,lN 46032

(317) 848-1323

MARYLAND
ALL AMERICAN
1136 TaftStreet
. Rockville,MD 20953

(301) 251-1205

JACO
Rivers Center
10270 Old Columbia Road
Columbia, MD 21048

(301)995~

VANTAGE
6925 Oakland Mills Road
Columbla;MD 21045

(301)

(612) 571-7766

NEW JERSEY
GRS ELECTRONICS
600 Penn St. @ Bridge Plaza
Camden,NJ 09102

(609) 964-8560

JACO
Ottillo OffIce Complex
555 Preakness Avenue
Totowa, NJ 07512

(201) 942-4000

VANTAQ1<
23 SllbIigoStreet
Cllft8niNJ 07013

(201)

m-4100

NEW YORK

99~444

ALL AMERICAN
33 Commack Loop
Ronkonkoma,NY 11779

(516) 981-3935

CAM/RPC
(718) 427-9999
2975 Brighton Henrietta TL Road
Rochester,NY 14623

MASSACHUSETS
AVED
200 Andover Business ·Park Dr.
Andover,MA 01810

(817) 688-3800

JACO
145 Oser Avenue
Hauppauge,NY 11798

(516)-273-5500

GERBER
128 Camegle Row
NOI\!I'lOd,MA 02062

(817) 329-2400

JANESWAY
404 North Terrace Avenue
Mount Vernon,NY 10552

(914) 699-6710

JACO
222 Andover Street
Wilmlngton,MA 01887

(817) 933-7760

JANESWAY
85 Bethpage Road
Hicksville, NY 11801

(516) 935-1827

MAYER,A.W.
34 Unnel Clrc:Ie
BlUerlca,MA 01821

(617) 229-2255

MICRO GENESIS .
215 Man:us Blvd.
Hauppauge,NYII798

(518) 273-2600

SELECT SALES
427 Turnpike Street
Canton, MA 02021

(617) 821-4770

VANTAGE
356 Veterans MemorIal Hwy.
COmrnack,NY 11725

(516) 543-2000

MICHIGAN

c8

VOYAGER
5201 East RIver Road
Fridley,MN 55421

NORTH CAROUNA

CALDER
4245 Brockton Drive
Grand RapIds,MI 49508

(616) 698-7400

DIXIE
2220 South Tryon Street
CharIotte,NC 28234

(704) 3n-5413

RS ELECTRONICS
34443 Schoolcraft
Livonia,MI48150

(313) 525-1155

HAMMOND
2823 Pdc Avenue
GreensbolO,NC 27420

(919) 275-6391

SAMSUNG SEMICONDUCTOR

4;38

SAMSUNG SEMICONDUCTOR DISTRIBUTORS
(Continued)
NORTH CAROLINA (Continued)
RESCOIRALEIGH
Hwy. 70 West & Rasco Court
Raleigh,NC 27612

TEXAS
(919) 781-5700

OHIO
CAM/RPC '
749 Miner Road
Cleveland,OH 44143

(216) 461-4700

SCHUSTER
11320 Grooms Road
Clncinattl,OH 45242

(513) 489-1400

SCHUSTER
20570 East Al,Jrora ROad
Twinsburg,OH 44087

(216) 425-8134

OREGON
CYPRESSIRPS
15075 S.KoII Parkway
SuiteD
Beaverton,OR 97006

(503) 641-2233

(503) 232-3404

(412) 782-3770

SOUTH CAROUNA

c8

JACO
1209 Glenville Drive
Richardson, TX 75080

(214) 235-9575

JANESWAY
1701 N. Greenville Avenue #906
Richardson, TX 75081

(214) 437-5125

OMNIPRO
4141 Billy MI!Chell
Dallas, TX 75244

(214) 233-0500

. UTAH
ADDED VALUE
1836 Parkway Blvd.
West Valley City,UT 84119

(801) 975-9500

STANDARD SUPPLY
3424 South Main Street
Salt Lake Clty,UT 84115

(801) 486-3371

VIRGINIA ELEC.
715 Henry Avenue
Chariottsvllle,NC 22901

(804) 296-4184

WASHINGTON

PENNSYLVANIA
CAM/RPC
620 Alpha DrIve
Plttsburgh,PA 15238

(214) 869-1435

VIRGINIA

OREGON (c;ontinued)
RADAR
704 S.E. Washington
PortIand,OR 97214

CYPRESS/RPS
. 2156 W. Northwest Highway
Dallas, TX 75220

DIXIE
4809 Pelham Road
Greenvllle,SC 29606

(803) 297-1435

DIXIE
1900 Barnwell Street
CoIumbla,SC 29201

(803) 779-5332

HAMMOND
1035 Lowndes Hill Rd.
GreenvUle,SC 29607

(803) 233-4121

CYPRESSIRPS
22125 17th Avenue
SuIle114
Bothell,WA 98021

(208) 483-1144

PRIEBE
14807 N.E. 40th
Redmond,WA 98052

' (206) 881-2363

RADAR
292 Torbett #E
Richland, WA 99352

(509) 943-8336

RADAR
168 Western Avenue West
Seattle,WA 98119

(208) 282-2511

WISCONSIN

SAMSUNG ,SEMICONDUCTOR

MARSH
1563 S. 101sl. Street
Mllwaukee,WI53214

(414) 475-6000

. 439

SAMSUNG SEMICONDUCTOR SALES OFFICES· U.S.A.
CALIFORNIA

"ILLINOIS

22837 Ventura Blvd.
Suite 305
Woodland Hills, CA 91367
(818) 346-6416

2700 Augustine Drive
Suite 198
Santa Clara, CA 95054
(408) 727-7433

SAMSUNG

MASSACHUSETTS

901 Warrenville Road
Suite 120
Lisle, IL 60532-1359
(312) 852-2011

20 Burlington Mall Road
Suite 205

NORTH CAROLINA

TEXAS

3200 Northline" Avenue
Suite 501G, Forum VI
Greensboro, NC 27408
(919) 294-5141

15851 Dallas Parkway
Suite 745
Dallas, TX 75248-3307
(214) 239-0754

~EMICONDUCTOR

Burlington, MA01803
(617) 273-4888

REPRESENTATIVES

U.S.A. and CANADA"
ALABAMA

TEL:"(205)~\

EUA
1200 Jordan lane
Suite 4
"Jordan Center
Huntsville,AL 35805

FAX: (205)533-5097

TERRIER ELEe.
3700 Gilmore WIIi!f, I06A
Burnaby, B.C., Canada
V5G4Ml

TEL: (604) 433-0159
FAX: (604) 430"()144

COLORADO

ARIZONA
HAAS & ASSOC. INe.
77441 East Butherus Drive
Suite 300

TEL: (602) 998-7195
FAX: (602) 998-7869

Scottsdale,AZ 85251

CANDALINC.
7500 West Mississippi Ave.
Suite A-2
Lakewood, CO 80226

TEL: (303) 935-7128
FAX: (303) 935-7310

CONNECTICUT

CALIFORNIA

PHOENIX SALES
257 MaIn SInIeI
Torrington,CT 06790

TEL: (203) 496-7709
FAX: (203) 496..()912

a",EST REP INC.
9444 Farnham St
Suite 107
San Dlego,CA 92123

TEL: (619) 585-8797
FAX: (619) 585-8990

SYNPAC
3945 Freedom Circle
Suite 650
Santa Clara,CA 95054

TEL: (408) 988-6988
FAX: (408) 998-5041

WESTAR REP COMPANY
1801 Parkcourt Place
Suite 1030
Santa Ana,CA 92701

TEL: (714) 635-4711/1:?113
FAX: (714) 835-3043

UEC
375 S. North Lake Blvd.
Suite 1030
Altamonte Sprlngs,FL 32701

TEL: (407) 332-7158
FAX: (407) 830-5436

WESTAR REP COMPANY
25202 Crenshaw Blvd.
Suite 217

TEL: (213) 539-2158
FAX: "(213) 539-2564

UEC
830 North Atlantic Blvd.
SuI1a 8401 .
Cocoa Beach, FL 32931

TEL: (407) 799..()620
FAX: (407) 7990923

FLORIDA
UEC

600 W. HIDsbora Blvd.

TEL: (305) 426-8944
FAX: (305) 426-8799

Suite 300
Deerfield Beach,FL 33441

Torrance, CA 90505

GEORGIA

EMA

CANADA
TEL: (416) 622-7558
FAX: (416)626-1036

TERRIER ELEe.
11115 The West Mall

E/oblcoke, Ontario,
M9C lC2

c8

6695 Peachlnle Ind Blvd.
SuIte 101
A.anla, GA 30380

TEL: (404) 448-1215
FAX: (404) 446-9363

Can~

SAMSUNG SEMICONDUCTOR"

440

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
U.S.A. and CANADA (Cor.rtinued)

ILUNOIS
IRI
8430 Gross Paint Road
Skokle.IL 60076

TEL: (312) 967-&130
FAX: (312) 967·5903 "

INDIANA
STB & ASSOC. INC.
3003 E. 96th SI.
Sultel02
Indanapolls,lN 46240

TEL: (317) 644-9227
FAX: (317) 844-1904

TEL: (301) 789-9360
FAX: (301) 789-9364

TEL: (617) 863-8896
FAX: (617) 863-0462

MICHIGAN
JENSENC.B.
2145 Crooks Rd.
Troy.MI 48084

TEL: (313) 643-0506
FAX: (313) 643-4735

TEL: (612) 854-1120
(612) 854-8312

TEL: (201) 461·2789
FAX: (201) 461-3857

NEW YORK
r-8aUARE

TEL: (315) 463·8592

6443 Ridings Road
Syracuse, NY 13206

FAX: (315) 463·0355

r-8aUARE

TEL: (716) 924-9101

7353 Victor·Pittsford Road.
Victor, NY 14564

FAX: (716) 924·4946

GODWIN & ASSOC.
1100 Logger Cl
Suite B 102
Raleigh, NC 27609

TEL: (919) 878-8000
FAX: (919) 878-3923

GODWIN & ASSociATES
2812 oak leigh Drive
Charlotte, NC 28213

TEL: (704)549-8500
FAX: (704) 549·9792

RIYCO JANUARY INC.
RJI BuUdng
78 South Trooper Road"
Norristown,PA 19403

P,Il~"T,O /!IICO
DlGIT·TECH
P.O. BOX 1945
CALLE CRUZ 112
BAJOS. SAN GERMAN

TEL: (215) 631·1414
FAX: (215) 631·1640

TEL: (809) 892-4260
FAX: (809) 892-3366

EMA
210 W. Stone Allenue
Greenville. SC 29609

TEL: (803) 233-4637
FAX: (803) 242-3089

S.W. SALES INC.
. 2267 Trawood, Bldg. E3
EI Paso, TX 79935
V1ELOCK ASSOC.
720 E. Park Blvd.
Sultel02
Plano,TX 75074 "
VIELOCK ASsoc.
9600 Great Hills Trail
Sultel50-W
Austln,TX 78759

TEL: (915) 594-8259
FAX: (915) 592-0288
TEL: (214) 881·1940
FAX: (214) 423-8556

TEL: (512) 345-8498
FAX: (512) 346-4037

ANDERSON & ASSoc.
270 South Main, 11106
Bountiful, UT 84010

TEL: (801) 292-8991
FAX: (801) 298·1503

WASHINGTON
EARL & BROWN CO.
2447-A 152nd Aile. N.E.
Redmond,WA 98052

TEL: (206) 885-5064
FAX: (206) 885-2262

WISCONSIN

OHIO

cfs

TEL: (503) 643-5500
FAX: (503) 644·9230

UTAH

NORTH CAROUNA

BAILEY, J.N. & ASSOC.
129 W. Main Street
New Lebanon,OH 45345

EARL & BROWN CO.
9735 S.w. Sunshine Cl
SulteSOO
Beaverton,OR 97005

TEXAS

NEW JERSEY
NECCO
2460 Lemoine Avenue
Fl Lee,NJ 07024

TEL: (216) 273-3798
FAX: (216) 225·1461

SOUTH CAROUNA

MINNESOTA
IRI
1120 East BOth Street
Bloomington, MN 55420 FAX:

BAILEY, J.N. & ASSOC.
1667 Devonshire Drive
Brunswlck,OH 44212

PENNSYL VANIA

MASSACHUSETTS
JODAN TECHNOLOGY
177 Bedford Sl
LexinglDn, MA 02173

TEL: (614) 262·7274
FAX: (614) 262-0384

OR~GON

MARYLAND"
ADVANCED TECH SALES
609 Hammonds Ferry Rd.
SuiteD
. Llnthlcum,MD 21090

BAILEY, J.N. & ASSOC.,
2679 Inclanala Allenue
Columbus,OH 43202

TEL: (513) 687·1325
FAX: (513) 687·2930

SAMSUNG SEMICONDUCTOR

IRI
631 Mayfair
MUwaukee, WI 53226

TEL: (414) 259-0965

441

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
EUROPE
AUSTRIA
ABRAHAMCZIK + DEMEL
GesmbH & Co. KG
Eichenslrl,lbe 58-6411
A-ll20 Vienna

NETHERLANDS
Tel:(0222) 857661
l1x: 0134273
Fax: 833583

Tel:(02) 7250900
l1x: 25820
Fax:(02) 7250813

Tel:(358)05284320
, l1x: 124426
Fax:(358)0524986

Barcelona~

Tel: (93) 2172340
l1x: 9n87 SMCD E
Fax: 2175698
Tel:(91)4468141/44
l1x: 42615 LUSAE.

SWEDEN
NORDISK ELEKTRONIK AB
Huvudstagatan 1 Box 1409
5-17127 Solna

Tel:(08)7349770
l1x: .10547 ;
Fax:(08) 272204

SWITZERLAND

FRA.NCE
ASIAMOS
Batiment EVOLIC 1
155 Boulevard de Valmy
92705 Colombes, France

SEMICONDUCTORES S.A.
Ronda General Mitre, 240

fMNTOS DEL VALLE, S.A.
Gallleo, 54, 56
28015 Madrid

FINLAND
INSTRUMENTARIUM
ELEKTRONIIKKA
P.O. Box 64,Vltikka
SF-02631 EspOO
Helsinki Finland

Tel:(010) 3737n
l1x: 21598

SPAIN

BELGIUM
NEWTEC INTERNATIONAL
Chaussee de louvain 186
1940 Woluwe-St-Etlenne
Leuvensesteenwet 185
194Q.Sint-Stevens-WoIuwe

BV HANDELMIJ. MALCHUS
Fokkerstratt 511-513
Poslbus 48
NL-3100 AA Schledam

Tel: (1) 47601255
l1x: 613890F
Fax:(l )47601582

PANATELAG
Hardstrabe 72
CH-5430 Wettingen Zurich

Tel:(056)275275
llx: 58068
Fax: (056) 271924

UNITED KINGDOM
GERMANY (WEST)
KORD DISTRIBUTION LTD.
SILCOM ELEKTRONICS
Neusser Str. 336-338
0-4050 Muchengladbac:h

Tel: (02161) 60752
l1x: 852189

.MICRONETICS VERTRIEB8Tel: (07159) 6019
GESELLSCHAFT
l1x: 724708
ELEKTRONISCHER
BAUELEMENTS and SYSTEME GmbH
Weil der Stadler Strabe. 45
7253 Rennlngen 1 .
ING. THEO HENSKES GmbH
Laatzener SIr. 19
Postfach 721226
30000 Hannover 72
ASTRONIC GmbH
Wlnzerer SIr. 47d
. 8000 Munc:hen 40

Tel:(0511) 865075
l1x: 923509
. Fax: 876004

Watchmoor Road, Carnberley
Surrey GUl53AQ
BYTECH LTD.
2 The Western Centre
Western Road
Brac:knell Berkshire RG121RW

Tel: 0276 685741
llx: 859919
KORDISG.
Tel: 0344 482211
l1xl848215

RAPID SILICON

Tel: 0494 26271
Sales hot line: 0494 442266
Rapid House Denmark Street
l1x: 837931
High Wycombe
Fax: 0494 21860
Bucklnghamshlre HP 11 2 ER

Tel:(089) 309031
. l1x: 521687
Fax:(089)3006001

, ITALY
MOXEL S.P.A.
20092 Clnisello Balsamo (MI)
Via C. Frova. 34

Tel:(02) 61290521
l1x: 352045
FaX: (02) 6172582

DIS. EL S.R.L
10146 Torino
Via Ala dI Stura 71/18

Tel: (220) 1522345
llx: 215118

c8

SAMSUNG SEMICONDUCTOR

442

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
ASIA
HONG KONG

JAPAN

AV. CONCEPT

ADO ELECTRONIC INDUSTRIAL CO., LTD.

Hunghom Comm~rcial Centre,
Room 708, Tower A 7/F
37-39, Ma Tau Wai Road
Hunghom, Kowloon, Hong Kong
Tel: 3-629325"'6, 3-347722"'3
Tlx: 52362 ADVCC HX
Fax: 852-3-7234718

7t~ FL., SASAGE BLDG. 4-6 SOTOKANDA
2-CHOME CHIYODA-KU, TOKYO 101, JAPAN
Tel: 03-257-1618
Fax: 03-257-1579

PROTECH COMPONENT
FLAT 3 10/F WING SHING IND. BLDG.
26 NG FONG ST, SANPOKONG
KOWLOON, Hong Kong
Tel: 3-255106
Tlx: 38396 PTLD HX
Fax: 852-3-7988459

TRIATOMIC ENTERPRISES

INTERCOM PO INC.
IHI BLDG, 1-6-7, SHIBUYA, SHIBUYA-KU
TOKYO 150 JAPAN
,Tel: 03-406-5612
Fax: 04-409-4834

CHEMI-CON INTERNATIONAL CORP.
MITSUYA TORANOMON BLDG.
22-14, TORANOMON 1 CHOME
MINATO-KU TOKYO 105, JAPAN
Tel: 03-508-2841
Fax: 03-504-0566

Room 2001 A Nan Fung Center
264-298, Castle Peak Road

TOMEN ELECTRONICS CORP ~

Tusen Wan, New Territories.

1-1, USCHISAIWAI-CHO 2 CHOME
CHIYODA-KU TOKYO, 100
Tel: 03-506-3473
Fax: 03-506-3497

Tel: 0-4121332
Fax: 0-4120199

MATSUDA ELECTRONICS
6/F CHUNG PAK Commercial BLDG.
2 Cho Yuen SI. Yau Tong Bay
Kowloon, Hong Kong
Tel: 3-7276383
Tlx: 42349 MAZDA HX
Fax: 852-3-7989661

JERS ELECTRONICS COMPANY
14/F, Houtex Industrial BLDG.
16 Hung To Road, Kwan Tong Kowloon
Hong Kong
Tel: 3-418311-8
Tlx: 55450 JERSE HX
Fax: 852-3-438712

TAIWAN
YOSUN INDUSTRIAL CORP.
MIN SHENG Commercial BLDG.
10F., No. 481, MIN-SHENG EAST RD.,
TAIPEI, TAIWAN, R.O.C.
Tel: 501-0700 (10 LINES)
Tlx: 26777 YOSUNIND
Fax: (02) 503-1276

KENTOP ELECTRONICS CO., LTD.
5F-3, 21st CENTURY BLDG.,
NO. 207, TUN-HWA N. RD., TAIPEI
Tel: (02) 716-1754, 716-1751
Fax. (02) 717-3014

=8

SAMSUNG SEMICONDUCTOR

DIA SEMICON SYSTEMS INC.
WACORE 641-37-8 SANGENJAYA
SETAGAYA-KU TOKYO 154 JAPAN
Tel: 03-487-0386
Fax: 03-487-8088

RIKEI CORP.
NICHIMEN BLDG. 2-2-2 NAKANOSHIMA
KITA-KU OSAKA 530 JAPAN
Tel: 06-201-2081
Fax: 06-222-1185

SINGAPORE
GEMINI ELECTRONICS PTE LTD.
100, UPF-R CROSS STREET
#09-08 OG BLDG. SINGAPORE 0105
Tel: 65-5351777
Tlx: RS 42819
Fax: 65-5350348

INDIA
MURUGAPPA ELECTRONICS LTD.
PARRRY HOUSE 3rd floor 43 Moore Street
MADRAS 600 001 India
Tel: 21019/31003
-Tlx: 1il41-8797 HIL IN.

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
KOREA
NAE,WAE ELECTRIC CO., LTD.
Room 403, 22Dong Sumin Bldg,
#16·1, Hangangro·2ka, Yongsanku,
, Seoul Korea,
Tel: 701·7341"'5
Fax: 717·7246

NEW CASTLE
SEMICONDUCTOR CO., LTD.
1 23·1, Joo Kyo Dong
Joongku, Seoul Korea
Tel: 274·3220, 3458

HANKOOK SEMICONDUCTOR
SAMSUNG
LIGHT-ELECTRONICS CO., LTD.
149·Jang Sa Dong
Jongroku, Seoul Korea
Tel: 744·2110, 269·6187/8
Fax: 744·4803

11 31·9 Kurodong, Kuroku,
Seoul Korea
Tel: 868·0277"'9
Fax: 868·4604

SEGYUNG ELECTRONICS
182·2 Jang Sa Dong
Jongroku, Seoul Korea
Tel: 272·681,1 "'6
Fax: 273·6597

. c8

SAMSUNG SEMICONDUCTOR

444

•

••

C=C SAMSUNG
• • Semiconductor
HEAD OFFICE :
9110FL. SAMSUNG MAIN BLDG .
250, 2-KA , T AEPYUNG-RO ,
CHUNG-KU , SEOUL , KOREA
C .P.O. BOX 8233

BUCHEON PLANT:
82-3 , DODANG-DONG ,
BUCHEON, KYUNGKI-DO , KOREA
C.PO . BOX 5779 SEOUL 100

KIHEUNG PLANT :
SAN #24 NONGSUH-RI , KIHEUNG-MYUN
YONGIN-GUN , KYUNGKI-DO , KOREA'
C.P.O. BOX 37 SUWON

GUMI BRANCH :
259 , GONDAN-DONG , GUMI ,
KYUNGSANGBUK~O , KOREA

SAMSUNG SEMICONDUCTOR INC .:
3725 NORTH FIR ST STREET
SANJOSE, CA 95134-1708 , USA

HONG KONG BRANCH :
13FL. BANK OF AMERICA TOWER
12 HARCOURT ROAD , HONG KONG

TAIWAN OFFICE:
RM 1102, I.T . BLDG, NO. 385
TUN-HWA S, RD , TAIPEI , TAIWAN

SAMSUNG JAPAN CO ,:
RM 3108 , KASUMIGASEKI BLDG .
2-5, 3-CHOME KASUMIGASEK I
CHIYODA-KU, TOKYO, 100 JAPAN

TELEX : KORSST K27970
TEL: (SEOUL) 751 ' 2114
FAX : 753-0967

TELEX : KORSEM K28390
TEL : (SEOUL) 741-0066, 662-0066
FAX : 741-4273

TELEX : KORSST K23813
TEL: (SEOUL) 741-062017
FAX : 741-0628

TELEX : SSTGUMI K54371
TEL: (GUMI) 2-2570
FAX : (GUMIl 52-7942

TEL: (408) 434-5400
TELEX : 339544
FAX : (408) 434-5650
TEL: (5) 21-030719 , 21-0300 , 23-7764
TELEX : 80303 SSTC HX
FAX: (5) 84-50787

TEL : (2) 777-104415
FAX : (2) 777-3629

TEL: (03) 581-181617585
TELE X: J24244
FAX : (03) 581-7088

SAMSUNG SEMICONDUCTOR EUROPE GMBH :
MERGENTHATER ALLEE 38-40
6236 ESCHBORN, WIG.

SAMSUNG (U.K.) LTD .:
6 FL . VICTORIA HOUSE SOI,.lTHAMPTON
ROW W.C. 1 LONDON . ENGLAND

TEL : 0-6196-90090
FA X : 0-6196-900989
TLX : 4072678 SSED

TELEX : 297987 STARS LG
TEL : 831-695) 15
FAX : (01) 430'-0096

PRINTED IN KOREA

JULY, 1988
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