1987_Sprague_Hall_Effect_and_Optoelectronic_Sensors 1987 Sprague Hall Effect And Optoelectronic Sensors
User Manual: 1987_Sprague_Hall_Effect_and_Optoelectronic_Sensors
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Itt ii~~. SPRAGUE®
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THE MARK OF RELIABILITY
HALL EFFECT
AND
OPTOELECTRONIC SENSORS
HALL EFFECT SENSORS
Switches
Latches
Linears
Unipolar
Bipolar
Dual Output
PowerHaWM
Geartooth
OPTOELECTRONIC SENSORS
Encoder Switches
High Speed Switches
Twilight Sensing Switches
Precision Linears
SPRAGUE ELECTRIC COMPANY
SEMICONDUCTOR GROUP
70 Pembroke Road, Concord, N.H. 03301
603/224-1961
Copyright
@
1987, Sprague Electric Company.
Contents
SECTION I-GENERAL INFORMATION
Introduction .....................................................................
Sensor Division History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Sprague Sensor Part Numbering System ..................................................
Product Index ....................................................................
Cross-Reference " . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Customer Service Center. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Applications and Engineering Services ...................................................
Sprague Sensor Technology ...........................................................
Functions of QAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Quality Assurance Flow Chart .........................................................
Quality and Reliability ..............................................................
MIL-STD-883 Class B High-Reliability Screening ............................................
1-2
1-3
1-4
1-5
1-7
1-9
1-10
1-11
1-13
1-14
1-16
1-17
SECTION 2-HALL EFFECT SWITCHES
Selection Guide ................................................................... 2-2
Single Output Sensors
UGN-3013T/U Unipolar Hall Effect Switches .............................................
UGN-3019T/U and UGS-3019T/U Unipolar Hall Effect Switches .................................
UGN-3020T/U and UGS-3020T/U Unipolar Hall Effect Switches .................................
UGN-3030T/U and UGS-3030T/U Bipolar Hall Effect Switches .................................
UGN-3040T/U and UGS-3040T/U Unipolar Hall Effect Switches .................................
UGN-3113T/U Unipolar Hall Effect Switches .............................................
UGN-3119T/U and UGS-3119T/U Unipolar Hall Effect Switches .................................
UGN-3120T/U and UGS-3120T/U Unipolar Hall Effect Switches .................................
UGN-3130T/U and UGS-3130T/U Unipolar Hall Effect Switches .................................
UGN-3131T1U and UGS-3131T1U Bipolar Hall Effect Switches .................................
UGN-3140T/U and UGS-3140T/U Unipolar Hall Effect Switches .................................
2-3
2-6
2-9
2-12
2-15
2-18
2-21
2-24
2-27
2-30
2-33
Dual Output Sensors
UGN-3201K Unipolar Hall Effect Switch ................................................ 2-36
UGN-3220K Unipolar Hall Effect Switch ................................................ 2-38
See Also:
Hall Effect Latches ............................................................... 3-2
Special-Purpose Sensors ........................................................... 6-2
Hall Effect Applications ........................................................... 7-2
Contents
SECTION 3-HALL EFFECT LATCHES
Selection Guide ................................................................... 3-2
UGN-3035U Magnetically Biased Bipolar Latch .............................................
UGN-3075T/U and UGS-3075T/U Bipolar Latches ............................................
UGN-3076T/U and UGS-3076T/U Bipolar Latches ............................................
UGN-3077T/U and UGS-3077T/U Bipolar Latches ............................................
UGN-3275K and UGS-3275K Dual Complementary Output Bipolar Latches ...........................
UGN-3276K and UGS-3276K Dual Complementary Output Bipolar Latches ...........................
UGN-3277K and UGS-3277K Dual Complementary Output Bipolar Latches ...........................
3-3
3-7
3-10
3-13
3-16
3-16
3-16
See Also:
UGN-3030T/U and UGS-3030T/U Bipolar Hall Effect Switches .................................
UGN-313lT/U and UGS-313lT/U Bipolar Hall Effect Switches .................................
UGN-3235K Dual Output Switch ......................................................
UGN-5275K through UGN-5277K Dual Complementary Output PowerHaW" Latches ...................
Hall Effect IC Applications ...................................•.....................
2-12
2-24
6-7
6-9
7-2
SECTION 4-HALL EFFECT LlNEARS
Selection Guide ................................................................... 4-2
UGN-3501K1L1 Differential Dual Output Hall Effect Sensors .....................................
UGN-350lT/U Single Output Hall Effect Sensors .............................................
UGN-3503U and UGS 3503U Single Output Hall Effect Sensors ...................................
UGN-3604K and UGN-3605K Differential Output Hall Effect Sensors ...............................
4-3
4-6
4-9
4-12
See Also:
Hall Effect IC Applications ......................................................... 7-2
SECTION 5-0PTOELECTRONIC SENSORS
Selection Guide ................................................................... 5-2
Introduction to OptoelectroniCS ........................................................ 5-3
ULN-3311D and ULN-3311T Precision Light Sensors ..........................................
ULN-3312D and ULN-3312T Precision Light Sensors ..........................................
ULN-3330D and ULN-3330T Optoelectronic Switches .........................................
ULN-3332M and ULN-3333M Multichannel Optoelectronic Switches ...............................
ULN-3360D and ULN-3360T Optoelectronic Switches .........................................
ULN-3363D and ULN-3363T Optoelectronic Switches .........................................
ULN-3390D and ULN-3390T Optoelectronic Switches .........................................
ULN-3395D and ULN-3395T Optoelectronic Switches .........................................
5-5
5-5
5-11
5-17
5-11
5-11
5-22
5-25
See Also:
Light Sensing Using Optical Integrated Circuits ........................................... 7-42
Contents
SECTION 6-SPECIAL-PURPOSE SENSORS
Selection Guide ................................................................... 6-2
UGN-3056U and UGS-3056U Gear Tooth Sensor ............................................. 6-3
UGN-3235K Dual Output Switch ........................................................ 6-7
UGN-5275K through UGN-5277K Dual Complementary Ouput PowerHaWM Latches ..................... 6-9
SECTION 7-APPLICATIONS
Applications Guide
The Hall Effect Sensor: How Does It Work? ...............................................
Getting Started .................................................................
Electrical Interface ...............................................................
Rotary Activators for Hall Switches ....................................................
Ring Magnets-Detailed Discussion .......................... , .........................
Ferrous Vane Rotary Activators ......................................................
Operating Modes ................................................................
Operating Mode Enhancements-Compound Magnets ........................................
Increasing the Flux Density By Improving the Magnetic Circuit .................................
Magnet Selection ................................................................
Current limiting and Measuring .....................................................
Glossary ......................................................................
Sources for Ferrite Toroids and Magnets ................................................
Using Calibrated Devices ..........................................................
The Hall Effect Sensor ..............................................................
light Sensing Using Optical Integrated Circuits .............................................
7-2
7-6
7-8
7-10
7-14
7-16
7-23
7-23
7-26
7-28
7-30
7-35
7-36
7-37
7-38
7-42
SECTION 8-PACKAGE INFORMATION
Hall Effect ICs Packages and Installation Guidelines ......................................... 8-2
Optoelectronic Packages and Installation Guidelines ......................................... 8-3
Package Drawings
Suffix '0' 3-Lead Metal Hermetic Can with Glass End Car ....................................
Suffix 'HH' 3-Lead Ceramic Single In-line ...............................................
Suffix 'K' Head Plastic Single In-line .................................................
Suffix 'LI' 8-Lead Plastic Small Outline (SOIC) ............................................
Suffix 'LL' 3-Lead Plastic Small Outline (Long Lead SOT 89) ...................................
Suffix 'LT' 3-Lead Plastic Small Outline (SOT 89) ..........................................
Suffix 'M' 8-Lead Plastic Dual In-line ....................................... '.' .........
Suffix T 3-Lead Plastic Single In-line .................................................
Suffix 'U' 3-Lead Plastic Single In-line .................................................
Suffix 'UA' 3-Lead Plastic Single In-line ................................................
The following data books, covering the other products of Sprague's
Semiconductor Group, may be obtained by writing to Technical Literature
Service, Sprague Electric Company, Post Office Box 9102, 41 Hampden
Road, Mansfield, MA 02048-9102.
WR-S04 Integrated Circuits
CN-2S0 Transistors and Diodes
8-4
8-5
8-6
8-7
8-8
8-9
8-10
8-11
8-12
8-13
GENERAL INFORMATION
HAll EFFECT SWITCHES
HAll EFFECT LATCHES
.
.',
.
....
·HAll· EFFECT lIN~ARS
..
".'~.: ..
. OPTOELECTRONIC SENSORS
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. ,.:~ ~";:, ~
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. SPECIAl~PURPOSESENSOR$
. PACKAGE INFORMATION· .
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.
SECTION I-GENERAL INFORMATION
Introduction ...................................................................... 1-2
Sensor Division History ............................................................... 1-3
Sprague Sensor Part Numbering System ................................................... 1-4
Product Index ..................................................................... 1-5
Cross-Reference ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-7
Customer Service Center .............................................................. 1-9
Applications and Engineering Services ................................................... 1-10
Sprague Sensor Technology ........................................................... 1-11
Functions of QAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1-13
Quality Assurance Flow Chart ......................................................... 1-14
Quality and Reliability .............................................................. 1-16
MIL-STD-883 Class B High-Reliability Screening ............................................ 1-17
1-1
INTRODUCTION
SPRAGUE ELECTRIC COMPANY
The Sensor Division of the Sprague Semiconductor Group manufactures Hall Effect and optoelectronic sensor components for the automotive, computer, appliance, and telecommunication industries. We are the
premier manufacturer of silicon-based sensors, having developed the technology nearly twenty years ago. We are committed to excellence in all we
do. Our objective is to be the worldwide leader in circuit design, process
and packaging technology, and customer service. As our customer, you
benefit from the in-depth knowledge and experience of our design and
applications staff; state-of-the-art manufacturing and test facilities; advanced quality standards and programs; European and Japanese customer
service centers and worldwide sales coverage.
Sprague is committed to sensors. We are recognized as a worldwide
leader as a result of our continuing commitment. That commitment begins
with our Division Headquarters Customer Service Center in Concord,
New Hampshire. Here. our staff stands ready to help you with your requirements. Whether you are a hobbyist, performing research. or have
ongoing requirements. your needs will be thoroughly addressed by our
Marketing and Customer Service groups.
Tell us about your requirements and tell us how we can help.
Sprague
Sensing the Future
1-2
HISTORY
SENSOR DIVISION HISTORY
Sprague Electric Company entered the Hall sensor business at its inception in 1967 through ajoint
venture agreement with a major keyboard manufacturer. Sprague agreed to manufacture Hall Effect
integrated circuits in its Worcester, Massachusetts,
integrated circuit facility. During the term of this
agreement from 1967 through 1970, Sprague shipped
millions of dice for keyboard applications. When the
agreement was terminated, Sprague decided to remain in the Hall IC sensor business and to supply
these circuits to OEM accounts.
proved and the American automotive industry
began to evaluate their use in automotive requirements and other sensing applications. The growth
potential for Hall sensors began to accelerate rapidly. As the sensor business began to grow, the manufacturing capacity had to be increased rapidly.
Staff and additional assembly equipment were
added in Concord, New Hampshire, and in a
Sprague-owned facility in Manila, Republic of the
Philippines.
The period from 1981 to the present has shown a
dramatic growth in the sensor business. During
1982, Sprague introduced the first bipolar latching
Hall IC (UGN-307S) which is used extensively in the
brushless motor market throughout the world. In
1983, Sprague also introduced a temperature-stable
linear device (UGN-3S03) with an operating temperature range of -40°C to + ISO°C. In 1986, a new,
adjustable, temperature-compensated digital switch
(3100 series) was introduced and is now widely accepted. Additionally, two new dual-output circuits
are now available and our product offerings continue
to grow. In 1985, an optoelectronic product line was
introduced and we are now designing and selling
these circuits.
Sprague, after the termination of the agreement,
decided to design circuits capable of more than keyboard switch applications. A linear circuit was then
developed to complement the digital switch offerings. During the early years of Sprague's entrance
into the market, a great deal of effort was spent in
developing a market for these practical, reliable, and
versatile sensors. The initial efforts were moderately successful and the Sprague Semiconductor
Group dedicated resources in establishing a sensor
business.
In 1974, the decision was made to move the sensor
business to the Concord, New Hampshire, facility
so that the available assembly and test capacity
could be utilized. At this time, a design function was
staffed and circuit development began in Concord
under the direction of the design manager who still
leads this group and is one of the foremost Hall IC
circuit designers in the world.
Today, Sprague has gained the stature of a major
supplier of sensor products for many diverse applications. The circuit design function and applications
engineering have been expanded. Manufacturing
space devoted to sensors now occupies a significant
portion of the 120,000 square foot facility in Concord, New Hampshire. In addition, manufacturing
capacity is utilized in our Manila facility and at a
contract assembly location in Korea. Our assembly
and test processes utilize state-of-the-art equipment. Statistical process control is being implemented in all production processes. IC wafer
facilities in Worcester, Massachusetts, and Willow
Grove, Pennsylvania, support our wafer requirements and give us access to Bipolar, BiMOS, and
CMOS technologies.
The major problems associated with HalllC sensor circuits were insensitivity and performance over
a broad temperature range. In 1977, a circuit was
developed which exhibited satisfactory performance at temperatures of -40°C to + 12SoC, which
made them suitable for automotive and other harsh
environmental applications. This circuit was successfully used in many applications in the U.S.,
Europe, and Japan, and marked the start of a
growth curve in the Sprague sensor business.
This circuit was followed in 1979 by a new circuit
which extended the temperature range to ISO°C and
offered better performance so that it was widely
accepted for automotive applications in Europe and
brushless motors in Japan. The sensor business was
truly international in scope and its horizons were
expanding.
Sprague is proud of its reputation as a leader in
Hall Effect sensor technology and as a supplier of
reliable sensors. We are solidly committed to maintaining, enhancing, and expanding our reputation
and participation in the sensor market. We firmly
believe in meeting our customers' needs and in finding new ways to utilize sensor technology. Our
motto says it well. "We Sense the Future."
By 1980, the packaging of these circuits had im-
1-3
PART NUMBERS
SENSOR PART NUMBERING SYSTEM
UG
N
3140
U
T'-_______ PACKAGE DESIGNATION.
C
D
DA
H
HH
K
l
II
II
lT
T
TA
=
=
=
=
=
=
=
=
=
=
=
=
U =
UA =
W =
Y =
UNENCAPSULATED CHIPS
METAL CAN, 3-lEAD, (TO-52)
METAL CAN, 3-lEAD, (TO-52), INDUSTRY PIN OUT (OBSOLETE)
CERAMIC, 3-lEAD (OBSOLETE)
CERAMIC, 3-lEAD
HEAD S.l.P.
SOT-89 (OBSOLETE-REPLACED BY IT)
SOIC-8, 8-lEAD VERSION
SOT -89, LONG lEAD VERSION
SOT-89
MODIFIED TO-92 (0.080" THICK)
MODIFIED TO-92 (0.080" THICK), INDUSTRY PIN OUT
(OBSOLETE)
MODIFIED TO-92 (0.060" THICK)
SHORT "U" PACKAGE
WAFER
TO-92 TRANSISTOR (OBSOLETE)
' - - - - - - - - - DEVICE TYPE (FOUR-DIGITS).
1....-_ _ _ _ _ _ _
1....-_ _ _ _ _ _
OPERATING TEMPERATURE RANGE.
N = - 20°C to + 85°C
S = - 40°C to + 125°C
FAMilY.
UG = HAll EFFECT
Ul = OPTOELECTRONIC
1-4
PRODUCT INDEX
PRODUCT INDEX in Alphanumerical Order
Device Type
Page
Device Type
UGN-3013LL
UGN-30l3LT
UGN-3013U
UGN-3013UA
2-3
2-3
2-3
2-3
UGN-3019LL
UGN-3019LT
UGN-3019T
UGN-3019U
UGN-3019UA
2-6
2-6
2-6
2-6
2-6
UGN-3119LL
UGN-3119LT
UGN-3119T
UGN-3119U
UGN-3119UA
UGN-3020LL
UGN-3020LT
UGN-3020T
UGN-3020U
UGN-3020UA
2-9
2-9
2-9
2-9
2-9
UGN-3030LL
UGN-3030LT
UGN-3030T
UGN-3030U
UGN-3030UA
2-12
2-12
2-12
2-12
2-12
UGN-3035U
3-3
UGN-3040LL
UGN-3040LT
UGN-3040T
UGN-3040U
UGN-3040UA
2-15
2-15
2-15
2-15
2-15
UGN-3056U
6-3
UGN-3075LL
UGN-3075LT
UGN-307ST
UGN-3075U
UGN-3075UA
3-7
3-7
3-7
3-7
3-7
UGN-3076LL
UGN-3076LT
UGN-3076T
UGN-3076U
UGN-3076UA
3-10
3-10
3-10
3-10
3-10
UGN-3077LL
UGN-3077LT
UGN-30m
UGN-30nU
UGN-30nUA
3-13
3-13
3-13
3-13
3-13
UGN-3113T
UGN-3113U
UGN-3113UA
2-18
2-18
2-18
1-5
p"'a
2-21
2-21
2-21
2-21
2-21
UGN-3120LL
UGN-3120LT
UGN-3120T
UGN-3120U
UGN-3120UA
2-24
2-24
2-24
2-24
2-24
UGN-313OLL
UGN-3130LT
UGN-3130T
UGN-3130U
UGN-3130UA
2-27
2-27
2-27
2-27
2-27
UGN-3131LL
UGN-3131LT
UGN-313lT
UGN-313lU
UGN-313lUA
2-30
2-30
2-30
2-30
2-30
UGN-3140LL
UGN-3140LT
UGN-3140T
UGN-3140U
UGN-3140UA
2-33
2-33
2-33
2-33
2-33
UGN-3201K
2-36
UGN-3220K
2-38
UGN-3235K
6-7
UGN-3275K
UGN-3276K
UGN-3277K
3-16
3-16
3-16
UGN-3501L1
UGN-3501K
UGN-350lT
UGN-350lU
UGN-350lUA
4-3
4-3
4-6
4-6
4-6
UGN-3503U
UGN-3503UA
4-9
4-9
UGN-3604K
UGN-3605K
4-12
4-12
UGN-527SK
UGN-5276K
UGN-5277K
6-9
6-9
6-9
PRODUCT INDEX
PRODUCT INDEX in Alphanu""erical Order (Continued)
Device Type
Page
Device Type
Page
UGS-3019LL
UGS-3019LT
UGS-3019T
UGS-3019U
UGS-3019UA
2-6
2-6
2-6
2-6
2-6
UGS-3120LL
UGS-3120LT
UGS-3120T
UGS-3120U
UGS-3120UA
2-24
2-24
2-24
2-24
2-24
UGS-3020LL
UGS-3020LT
UGS-3020T
UGS-3020U
UGS-3020UA
2-9
2-9
2-9
2-9
2-9
UGS-3130LL
UGS-3130LT
UGS3130T
UGS-3130U
UGS-3130UA
2-27
2-27
2-27
2-27
2-27
UGS-3030LL
UGS-3030LT
UGS-3030T
UGS-3030U
UGS-3030UA
2-12
2-12
2-12
2-12
2-12
UGS-3040LL
UGS-3040LT
UGS-3040T
UGS-3040U
UGS-3040UA
2-15
2-15
2-15
2-15
2-15
UGS-3131LL
UGS-3131LT
UGS-313lT
UGS-3131U
UGS-313lUA
2-30
2-30
2-30
2-30
2-30
UGS-3056U
6-3
UGS-3140LL
UGS-3140LT
UGS-3140T
UGS-3140U
UGS-3140UA
2-33
2-33
2-33
2-33
2-33
UGS-3075LL
UGS-3075LT
UGS-3075T
UGS-3075U
UGS-3075UA
3-7
3-7
3-7
3-7
3-7
UGS-3275K
UGS-3276K
UGS-3277K
2-16
2-16
2-16
UGS-3503U
UGS-3503UA
4-9
4-9
UGS-3076LL
UGS-3076LT
UGS-3076T
UGS-3076U
UGS-3076UA
3-10
3-10
3-10
3-10
3-10
ULN-3311D
ULN-3311T
ULN-3312D
ULN-3312T
5-5
5-5
5-5
5-5
ULN-3330D
ULN-3330T
5-11
5-11
UGS-3077LL
UGS-3077LT
UGS-30m
UGS-3077U
UGS-3077UA
3-13
3-13
3-13
3-13
3-13
ULN-3332M
ULN-3333M
ULN-3360D
ULN-3360T
ULN-3363D
ULN-3363T
5-17
5-17
5-11
5-11
5-11
5-11
U,GS-3119LL
UGS-31l9LT
UGS-31l9T
UGS-3119U
UGS-3119UA
2-18
2-18
2-18
2-18
2-18
ULN-3390D
ULN-3390T
5-22
5-22
ULN-3395D
ULN-3395T
5-25
5-25
1-6
COMPETITIVE CROSS-REFERENCE
CROSS-REFERENCE in Alphanumerical Order
The suggested Sprague replacement devices are based primarily on magnetic sensitivity and operational descriptions. Significant differences may
exist in dynamic operating range, package and electrical specification.
Other Sprague devices may be applicable. If you need additional information, consult the nearest Sensor Division Customer Service Center.
D
Competitive
Part
Number
Manufacturer
Description
Suggested
Sprague
Replacement
103SR
103SR13A-l
103SR17A-l
103SR5A-l
Microswitch
Microswitch
Microswitch
Microswitch
Linear
Unipolar Digital Switch
Bipolar Digital Switch
Unipolar Digital Switch
UGN-3501
UGS-3019
UGS-3030
UGN-3013
513SS16
517SS16
55SS16
Microswitch
Microswitch
Microswitch
Unipolar Digital Switch
Bipolar Digital Switch
Unipolar Digital Switch
UGS-3020
UGS-3131
UGN-3013
613SS2
617SS2
65SS2
6SS
Microswitch
Microswitch
Microswitch
Microswitch
Unipolar Digital Switch
Bipolar Digital Switch
Unipolar Digital Switch
Differential Output Hall Element
UGN-3019
UGS-3030
UGN-3013
UGN-3501
8SS1
8SS1El
8SS3
8SS3El
8SS5
8SS5El
8SS7
8SS7E1
Microswitch
Microswitch
Microswitch
Microswitch
Microswitch
Microswitch
Microswitch
Microswitch
Bipolar Digital Switch
Bipolar Digital Switch
Unipolar Digital Switch
Unipolar Digital Switch
Bipolar Digital Switch
Bipolar Digital Switch
Unipolar Digital Switch
Unipolar Digital Switch
UGS-3030
UGN-3030
UGS-3019
UGN-3013
UGS-3030
UGN-3030
UGN-3019
UGN-3019
91SS12-2
92SS12-2
Microswitch
Microswitch
Ratiometric Linear
Linear
UGN-3503
UGN-3501
BH-200
BH-700
BHA-900
BHT-900
Bell
Bell
Bell
Bell
Differential Output Hall Element
Differential Output Hall Element
Differential Output Hall Element
Differential Output Hall Element
UGN-3604/05
UGN-3604/05
UGN-3604/05
UGN-3604/05
DN6835
DN6836
DN6837
DN6838
DN6839
DN834
DN835
DN837
DN838
DN839
Matsushita, National
Matsushita, National
Matsushita, National
Matsushita, National
Matsushita, National
Matsushita, National
Matsushita, National
Matsushita, National
Matsushita, National
Matsushita, National
Linear
Linear
Unipolar Digital Switch
Bipolar Digital Switch
Unipolar Digital Switch
Dual Output Unipolar Digital Switch
Dual Output Linear
Dual Ouptut Unipolar Digital Switch
Dual Output Unipolar Digital Switch
Dual Output Unipolar Digital Switch
UGN-3501
UGN-3501
UGN-3019
UGN-3030
UGN-3019
UGN-3201
EW-500
EW-550
Asahi
Asahi
Bipolar Digital Latch
Unipolar Digital Switch
UGN-3075
UGN-3040
FH-301
Bell
Differential Output Hall Element
UGN-3604/05
1-7
UGN-3201
UGN-3203
UGN-3201
COMPETITIVE CROSS-REFERENCE
Competitive
Number
Manufacturer
Description
Suggested
Sprague
Replacement
H300A
HWI0IA
HW200A
HW300A
HW300B
Asahi
Asahi
Asahi
Asahi
Asahi
Differential Output Hall Element
Differential Output Hall Element
Differential Output Hall Element
Differential Output Hall Element
Differential Output Hall Element
UGN-3604/05
UGN-3604/05
UGN-3604/05
UGN-3604/05
UGN-3604/05
KSYlO
Siemens
Differential Output Hall Element
UGN-3604/05
OH360
OHN3013U
TRW
TRW
Unipolar Digital Switch
Unipolar Digital Switch
OHN3019U
TRW
Unipolar Digital Switch
OHN3020U
TRW
Unipolar Digital Switch
OHN3030U
TRW
Unipolar Digital Switch
OHN3040U
TRW
Unipolar Digital Switch
UGN-3020
UGN-3013U
UGN-3113U
UGN-3019U
UGN-3119U
UGN-3020U
UGN-3120U
UGN-3030U
UGN-3130U
UGN-3040U
UGN-3140U
OHS3019U
TRW
Unipolar Digital Switch
OHS3020U
TRW
Unipolar Digital Switch
OHS3030U
TRW
Bipolar Digital Switch
OHS3040U
TRW
Unipolar Digital Switch
Part
SAS-241
SAS-250
SAS-251
SAS-251-S4
SAS-251-S5
SAS-261
Siemens
Siemens
Siemens
' Siemens
Siemens
Siemens
UGS-3019U
UGS-3119U
UGS-3020U
UGS-3120U
UGS-3030U
UGS-3130U
UGS-3040U
UGS-3140U
Dual Output Unipolar Digital Switch
Dual Output Unipolar Digital Switch
Dual Output Unipolar Digital Switch
Dual Output Bipolar Digital Switch
Dual Output Bipolar Digital Switch
Unipolar Digital Switch
UGN-3201
UGN-3201
UGN-3201
UGN-3275
UGN-3275
UGN-3019
SS31EA
SS41
SS46
SS81CA
SS81EA
Microswitch
Microswitch
Microswitch
Microswitch
Microswitch
Bipolar Digital Switch
Bipolar Digital Switch
Bipolar Digital Switch
Bipolar Digital Switch
Bipolar Digital Switch
UGS-3131
UGS-3131
UGN-3030
UGS-3131
UGN-3131
THSI02
Toshiba
Differential Output Hall Element
UGN-3604/05
TLl70
TUnC
TLl73C
T11731
T1175C
Texas Instruments
Texas Instruments
Texas Instruments
Texas Instruments
Texas Instruments
Bipolar Digital Switch
Unipolar Digital Switch
Linear
Linear
Bipolar Digital Latch
UGN-3030
UGN-3019
UGN-3503
UGN-3503
UGN-3076
1-8
CUSTOMER SERVICE CENTER
CUSTOMER SERVICE CENTER
Consisting of personnel from Production Control,
Marketing and Applications, the Sensor Division Customer Service Center is your optimum source for Sensor information. We believe our customers are the most
important asset we have, and our friendly Customer
Service personnel are here to serve you.
From U.S. and
Canada:
Sprague Electric Company
Sensor Division
70 Pembroke Road
Concord, NH 03301
Tel: (603) 224-1961
(603) 224-2755
Tlx: 910-250-3643
Fax: 603-224-2466
For technical information, applications assistance
and samples:
Extensions 349 and 389
For special pricing and selected parts:
Extension 275
For delivery information, standard pricing and order
updates:
Extension 332
From Europe
and Mideast:
Sprague World Trade Corp.
18 A venue Louis Casai 1209
Geneva Switzerland
Tel: 011-41-22-98-40-21
Tlx: 845-23469
'Fax: 011-41-22-98-40-75
From Asia:
Sprague Asia Ltd.
G.p.a. Box 4289
Hong Kong, BCC
Tel: 011-852-0-28-31-88
Tlx: 43395
Fax: 011-852-0-22-00-42
011-852-0-26-96-03
1-9
D
APPLICATIONS AND ENGINEERING SERVICES
APPLICATIONS AND ENGINEERING SERVICES
Our highly qualified Sensor Applications technical staff and engineering
lab personnel are professionally equipped to assist you in the development
of Hall Effect and Optoelectronic transducer-based sensor solutions. Our
experience and technical expertise enable us to offer a wide spectrum of
engineering services including:
Product In/ormation: General data or specific technical needs can be met quickly and efficiently.
Engineering Samples: Prototype quantities of our
devices are entered and shipped through the Sample
Request System.
Calibrated Lineal' Devices: Valuable as application
development tools. these devices are individually
calibrated in the lab.
Application Evalul/tion: Recommendations with respect to optimizing sensor systems performance.
Other Services: Magnet characterization, bench
prototypes, and failure analysis are examples of our
capabilities in extended engineering support.
1-10
SPRAGUE SENSOR TECHNOLOGY
SPRAGUE SENSOR TECHNOLOGY
Sprague Hall Effect switches are a proven sensing
technology and have set the industry standard for
sensitivity, performance and reliability since the
1970's.
II
wafer type includes a quad element layout configuration to minimize operating parameter changes due
to mechanical stress effects from encapsulation operations. An adjustable resistor is an integral part of
the 3050's innovative design and enables fine tuning
of switching characteristics during manufacturing. This combination of design innovations enable
Sprague's Sensor Division to offer a series of Hall
Effect devices that have improved performance and
yet remain equivalent in price to our current series
of Hall Effect devices.
The Series 3000 Sprague Hall Effect switches are
based on a single integrated circuit design designated the 3023 Ie wafer type. These devices have
proven perfomance in many automotive, industrial
and computer-related applications in the past decade. The Series 3000 Sprague Hall Effect latches
are based on a single integrated circuit design designated the 3025 Ie wafer type. These devices are also
proven performers for electronic commutation of
brushless dc motors and rotary position encoders.
We recently introduced a line of optoelectronic
sensors to our standard product line. These devices,
the Series 3300 sensors, consist of the ULN-33 I I
and U LN-3312 linear optoelectronic sensors and the
ULN-3330, 3360, 3363 and 3390 optoelectronic
switches. The ULN-3311 and 3312 are suitable for
precision sensing of light levels in measurement and
control systems. The ULN-3330, 3360 and 3363 are
optoelectronic switches manufactured from the
same basic circuit with various output stages. The
standard part is the ULN-3330. The ULN-3360 has
an internal 5.4 K ohm pull-up resistor that allows
direct intelface to TTL logic. The ULN-3363 has an
The latest innovations in Sprague Hall Effect
technology are incorporated in the new 3100 series
of switches and latches. These parts are based on a
single integrated circuit design designated the 3050
Ie wafer type. This innovative chip design incorporates a high quality, low offset differential amplifier
stage and a temperature-compensated Schmitt trigger whose switching threshold varies to compensate
for thermal drift of the Hall element. The 3050 Ie
1-11
SPRAGUE SENSOR TECHNOLOGY
inverter implemented before the output transistor.
These optoelectronic switches are typically used for
encoders, control system and light level sensors.
The ULN-3390 optoelectonic switch is referred to
as the "Twilight Sensor." Its intended application is
in street lighting controls and dawn/dusk sensing
applications.
able from selected manufacturers. A Sprague customer service representative can recommend a suitable source for packaged sensor assemblies.
NEW GROWTH THROUGH
PRODUCT DEVELOPMENT
As a division of Sprague's Semiconductor Group,
we are constantly investigating new sensing technologies and incorporating the latest integrated circuit
manufacturing techniques. The Sensor Division has
several new products currently in engineering development. A Sprague Hall Effect-based gear-tooth
sensor is currently being developed for the automotive market. Target specifications include temperature stability, zero-speed sensing ability and
microprocessor-compatible output. A Smart Sensor, which is one of the first solid state sensors of
this type, is also under development. This device
employs the latest in bipolar and MOS fabrication
techniques on a single silicon die. The target specifications for this device include factory programmable addresses, temperature stability and SAE-compatible addressing protocol. A power output Hall
switch is also under development. Preliminary specifications call for an open-collector transistor output
capable of sinking up to 300 rnA of current. A power
Hall device would allow direct control of triacs, relays and motor coils.
SPRAGUE OFFERS
VERSATILITY IN PACKAGING
The Sprague sensor product line is continually
evolving to fulfill the demand for better. more versatile packaging of IC sensors. The standard packages for Hall and opto sensors are the Sprague
designation "U" and "'T" style epoxy packages.
Sprague Hali sensors are also supplied in two styles
of sUlface-mountable parts, an SOT-S9 package and
an SOIC-S. The SOT-S9 type comes in two package
designations, "LT" for short-leaded and "LL" for
long-leaded. The SOIC-S comes as package designation "LI." A new, smaller, 4-lead SIP package
designated as the "K" package has been implemented to replace the older 4-pin SIP. It will be used
for Hall elements and dual output switches and
latches. Hermetic HYREL' packaging for Sprague
sensor products includes a ceramic "U" type package designated "'HH" for Hall sensors and a toplooking metal can designated the "0" package for
opto sensors. Sprague sensors can also be supplied
as discrete wafers or tray-packed ICs for use in hybrid assemblies. Packaged sensor assemblies built
around high-quality Sprague products are avail-
The family of sensors available from Sprague
continues to grow as a direct result of customer demand, design innovations, and the desire to provide
the best possible solutions to real world sensing
challenges.
1-12
FUNCTIONS OF QAR
FUNCTIONS OF QAR
A. Quality Administration.
I. Customer and Government Inspection
Liaison
2. Customer Specification Review
3. Customer HYREU' Proposal Writing
Assistance
B. Quality Assurance.
I. Outgoing Quality Control
(Conformity to Customer and Sprague
Requirements)
2. HYREL-Life Environmental Testing
3. Inspection of Material
4. Process and Material Quality Control.
C. Reliability.
I. Customer Return Testing
2. Reliability Programs Testing
3. Qualification Programs Testing
4. New Product Evaluation
5. Competitive Evaluation
6. Life and Environmental Test Failure
Analysis
7. Customer Return Failure Analysis
8. Step-Stress and Accelerated Testing
9. Customer Product Specification Writing
10. Data Accumulation, Processing and
Evaluation
II. Reliability Report Writing
12. Reliability Product Engineering
The functions of the QAR Department include
new product design review, process and product
quality control and direction and maintenance of
high-reliability programs. QAR is also responsible
for issuing and controlling specification and drawing
changes, operation of environmental test facilities,
and auditing and maintenance of calibration and serviceability of measuring equipment.
The QAR manager reports to the general manager
of the Sensor Division. The QAR manager directs
all local quality and reliability operations. He/she
has section managers reporting to him/her who are
responsible for the quality and reliability of all outgoing product: acceptance or rejection of incoming
material; acceptance or rejection of in-process
parts; specifications and other documentation controlling quality; reliability studies; calibration; and
the quality evaluation of design materials, processes
and procedures.
Quality Assurance and Reliability has two m~or
objectives: first to assure the reliability and quality
of all products, and second to provide reliability and
quality services to Sprague customers, production
engineering, and marketing departments within the
division. QAR responsibilities include the following:
1-13
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VENDOR CONTROL
INCOMING INSP_
CHEMICALS, GASES,
HARDWARE WAFERS
RAW MATERIALS
MASKS
NEW PRODUCT DESIGNS
AND CURRENT DESIGNS,
NEW-CURRENT PROCESSES,
NEW MATERIALS
RELIABILITY ENGINEERING
DESIGN INTRODUCTION
(SEM) EVALUATION,
QUALIFICATION
DOCUMENTATION OF:
CHEMICALS, HARDWARE
GASES, MASKS
PROCESSES, DESIGNS, ETC_
PRODUCT ASSURANCE
DOCUMENTATION CENTER
PRODUCT-PROCESS AND
PROCUREMENT SPECS_
QA IN-PROCESS
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QUALITY AND RELIABILITY
QUALITY AND RELIABILITY
Quality and reliability are terms that are often
used .interchangeably. Quality implies reliability,
but a product's merit should always be defined by
both. Quality is the extent to which a device conforms to specifications when it is shipped to the user.
Reliability is the measure of a product's ability to
meet speci~cations over time.
2. Stabilize electrical drift.
3. Accelerate degradation of possible surface
chemical contaminates.
The temperature cycle conditioning consists of alternating the temperature between - 65°C and 150°C
for a minimum of eight cycles. Transfer time between temperature extremes is less than five minutes and soak time is thirty minutes at each
temperature. This temperature cycle culls out possible assembly and package related failures.
At the Sensor Division, quality and reliability are
designed-in and maintained with very stringent process controls. Statistical Process Control (SPC), a
statistical technique used to determine the quality
status of product during the manufacturing process,
is utilized for critical operations.
All Sprague sensor ICs are 100 percent screened
for all electrical and magnetic parameters at 25°C.
All Hall Effect sensors are then 100 percent
screened at the elevated temperature. Low temperature screen is also available for those applications
where very tight functional parametric limits are
required. Double testing is available for military
applications.
Sprague epoxy-encapsulated sensor ICs are used
in very demanding applications and harsh environmental requirements such as automotive engine control where temperatures range from -40°C to as
high as 170°C for short periods of time. A sensor
failure would result in an inoperative engine. Epoxyencapsulated sensor ICs are also used in many other
extremely high-reliability requirements such as
computers, where a sensor failure could result in
faulty data andlor complete shutdown.
In addition, burn-in andlor additional temperature
cycling is available for those applications that require it. If you are interested in these extra services,
please contact our Customer Service Center in Concord, New Hampshire.
Extensive preconditioning processes are utilized
to ensure that all components are properly cured;
electrical parameters are completely stabilized, and
any devices susceptible to possible infant mortality
failure are culled out. The 4-hour cure at 175°C followed by a 24-hour bake at 150°C is designed to:
All Sprague sensors are shipped in anti-static bags
to protect them from possible static discharge, and
double-boxed for added protection during shipment.
Special shipment packing can be easily arranged by
contacting our Customer Service Center in Concord, New Hampshire.
I. Assure that the encapsulating compounds are
fully cured.
1-16
MILITARY DEVICES
MIL-STD-883 CLASS B
HIGH-RELIABILITY SCREENING
All full-temperature hermetic devices are produced
on a production line that is Class B certified and are
processed to the production screen inspections and
100% Production and High Reliability Screen Te
MIL-STD-883, Method 5004, Class B
MIL-STD-883
Screen
Internal Visual
Stabilization Bake
Temperature Cycle
Constant Acceleration
Interim Electrical
Burn-In
Static Electrical
Dynamic & Functional Electrical
Fine Seal
Gross Seal
Marking
Sprague logo, part number and date
code lot identification.
External Visual
ormance Inspection
3, Method 5005, Class B
Description
est Method
5005, Table I
5005, Table II
5005, Table III
5005, Table IV
Each Inspection Lot
Each Inspection Lot
End Points, Gp. A, Subgp. 1, as required
End Points, Gp. A, Subgp. 1, as required
1-17
MILITARY DEVICES
UGS-3119
RELIABILITY PER MIL-HDBK-217
Environment
Ground Mobile
Environment
Missile Flight
100
100
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75
100
125
150
........
175
.........;
O. 1
50
200
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75
100
125
150
175
200
JUNCTION TEMPERATURE, Tj (OC)
JUNCTION TEMPERATURE, Tj (OC)
Dwg No A-14,440
Dwg No. A·14,441
Environment
Ground Benign
1000
..........
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C(AI
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8
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50
75
100
125
IN
175
150
JUNCTION TEMPERATURE, Tj (OC)
-
200
Dwg No A-14,442
1-18
NOTES
NOTES
GENERAL INFORMATION
HALL EFFECT SWITCHES
\ .
. .
:HALbEFFECT LATCHES.· .
r.:.;:·'"
: ..... .
... '
"<.f ;_
'.'
.• "
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SECTION 2-HALL EFFECT SWITCHES
Selection Guide. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 2-2
Single Output Sensors
UGN-3013T/U Unipolar Hall Effect Switches .............................................
UGN-3019T/U and UGS-3019T/U Unipolar Hall Effect Switches .................................
UGN-3020T/U and UGS-3020TlU Unipolar Hall Effect Switches .................................
UGN-3030T/U and UGS-3030TlU Bipolar Hall Effect Switches .................................
UGN-3040T/U and UGS-3040T/U Unipolar Hall Effect Switches .................................
UGN-3113T/U Unipolar Hall Effect Switches .............................................
UGN-3119T1U and UGS-3119T/U Unipolar Hall Effect Switches .................................
UGN-3120T/U and UGS-3120T/U Unipolar Hall Effect Switches .................................
UGN-3130T/U and UGS-3130TlU Unipolar Hall Effect Switches .................................
UGN-313lT/U and UGS-313lT/U Bipolar Hall Effect Switches .................................
UGN-3140T/U and UGS-3140TlU Unipolar Hall Effect Switches .................................
2-3
2-6
2-9
2-12
2-15
2-18
2-21
2-24
2-27
2-30
2-33
Dual Output Sensors
UGN-3201K Unipolar Hall Effect Switch ................................................ 2-36
UGN-3220K Unipolar Hall Effect Switch ................................................ 2-38
See Also:
Hall Effect Latches ............................................................... 3-2
Special-Purpose Sensors ........................................................... 6-2
Hall Effect Applications ........................................................... 7-2
2-1
HALL EFFECT SWITCHES
UNIPOLAR AND BIPOLAR SWITCHES
The open-collector output of a Sprague unipolar Hall Effect switch turns
ON when the sensor is exposed to magnetic flux density equal to or greater
than its operate threshold (south magnetic pole). The output turns OFF as
the magnetic field is removed and field strength falls below the release
threshold of the sensor.
Unipolar switches are available as single and dual output devices. Outputs of dual output switches in this section are both ON or both OFF,
depending on magnetic flux density presented to the sensor.
Operation of a bipolar Hall Effect switch is similar to that of a unipolar
switch, but requires application of magnetic fields of alternating polarity
(south/north ... ) for guaranteed switch operation (ON/OFF ... ). A rotating multipole ring magnet is the most common source of such alternating
polarity.
Two series of Hall Effect switches are now produced and marketed by
the Sensor Division of Sprague Electric Company. The 3000 Series was
introduced in 1978, the 3100 Series in 1986. Series 3100 switches feature
factory-adjustable magnetic characteristics, mechanical stress compensation, and temperature compensation that allows operation at temperatures
above + ISO°C.
SELECTION GUIDE
(In Order of Operate Threshold)
Max.
Min.
Min.
Operate
Release
Hysteresis
Output
-95G
Open-Collector
95G
20G
-150G
Open-Collector
150G
20G
20G
Open-Collector
200G
50G
Open-Collector
50G
20G
200G
Open-Collector
-250G
20G
250G
Open-Collector
350G
50G
20G
20G
Open-Collector
50G
350G
350G
50G
20G
Dual Open-Collector
Open-Collector
450G
25G
30G
Open-Collector
30G
20G
450G
500G
125G
50G
Open-Collector
Open-Collector
500G
125G
50G
Dual Open-Collector
750G
IOOG
50G
NOTE: Magnetic characteristics are guaranteed minimum/maximum values at
Output current ratings are absolute maximum values.
2-2
Max.
IS'NK
25 mA
25mA
25 mA
25 mA
25 mA
25 mA
25 mA
25 mA
25 mA
25 mA
25 mA
25 mA
25 mA
+ 25°C.
Device Type
UGN-3131T1U
UGN/S-3130T/U
UGN/S-3040T/U
UGN/S-3140T/U
UGN/S-3030T/U
UGN/S-3020T/U
UGN/S-3120TIU
UGN-3220K
UGN-30l3T/U
UGN-3113T/U
UGN/S-3019T/U
UGN/S-3119T/U
UGN-3201K
Page
2-30
2-27
2-15
2-33
2-12
2-9
2-24
2-38
2-3
2-18
2-6
2-21
2-36
UGN-3013T AND UGN-3013U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3013T AND UGN-3013U
LOW-COST HALL EFFECT DIGITAL SWITCHES
FEATURES
•
•
•
•
•
•
4.5 Vto 24 VOperation
Magnetically Driven Output
High Reliability-No Moving Parts
Small Size
Output Compatible with All Digital Logic Families
Constant Output Amplitude
D
Type UGN-3013 Hall Effect inteL OW-COST
grated circuits excel in applications not requiring extreme magnetic sensitivity, broadly spaced
hysteresis boundaries, or premium operating temperature ranges. In all other respects, the economical, magnetically activated switches meet the high
standards for fast, rugged, and reliable performance
set by other Sprague Hall Effect devices.
Dwg. No. A-ll,D02A
FUNCTIONAL BLOCK DIAGRAM
or MaS logic circuits. Selected devices, with outputs capable of sinking 50 rnA, are available on specialorder.
Each Hall Effect circuit includes a voltage regulator, Hall voltage generator, signal amplifier,
Schmitt trigger, and open-collector output on a single silicon chip. The on-board regulator permits operation over a wide range of supply-voltages.
Types UGN-3013T and UGN-30J3U are rated for
operation over the temperature range of - 20°C to
+ 85°C. The Hall Effect switches are offered in two
three-pin plastic packages-a 60-mil (1.54 mm) magnetically optimized "U" package, and one 80 mils
(2.03 mm) thick specified by the suffix "T"
The switches' open"collector outputs can sink up
to 20 rnA at a conservatively rated repetition rate of
100 kHz. They can be used directly with bipolar
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee ............................................... 25 V
Magnetic Flux Density, B ........................................ Unlimited
Output OFF Voltage .............................................. 25 V
Output ON Current, ISINK • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 25 mA
Operating Temperature Range, TA
UGN-3013T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
UGN-3013U. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts ............................ - 65°C to + 150°C
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA)
packages for surface-mount application. The regular SOT 89 package is
specified by substituting an "LT" for the last character of the part
number. The long leaded SOT 89 package is specified by substituting an
"LL" for the last character of the part number and the Low profile" U"
package is available by substituting" UA" for the last character of the
part number (e.g., UGN-3XXX1,I, UGN-3XXX1J", UGN-3XXX.!lA).
2-3
UGN-3013T AND UGN-3013U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS at TA = + 25°(, Vee = 4.5 Vto 24 V (unless otherwise noted)
Characteristic
Symbol
Operate Point*
Bop
Release Point*
Hysteresis*
BRP
BH
Output Saturation Voltage
VeEISATI
Output Leakage Current
IOff
Supply Current
lee
Output Rise Time
t,
Output Fall Time
t,
Test Conditions
B;:;, 450 G, ISINK = 20 mA
B:5 25G, VOU! = 24 V
B:525 G, Vee = 4.5 V, Output Open
B:5 25 G, Vee = 24 V, Output Open
Vee = 12 V, Rl = 8200, Cl = 20 pF
Vee = 12 V, Rl = 8200, Cl = 20 pF
Min.
Typ.
Max.
Units
25
30
300
225
75
85
0.05
2.3
3.0
150
400
450
G
G
G
-
-
-
400
10
5.0
5.0
-
mV
f.LA
mA
mA
ns
ns
*Magnetic flux density is measured at most sensitive area of device located at 0.036" ± 0.002" (0.91 mm ± 0.05 mm) below the branded face of the 'T' package
and 0.016" ± 0.002" (0.41 mm ± 0.05 mml below the branded face of the 'U' package.
GUARANTEED OPERATE AND RELEASE POINTS
AS FUNCTIONS OF TEMPERATURE
TEST CIRCUIT
12 V
600
-
c..o
z
500
>tzu.J 400
I/O
3013
MAX. OPERATE
8200
0
x 300
2
u
t=
u.J
200
z
c..o
..: 100
:2'
a
-50
MI N. RELEASE
-25
a
25
0.9. No. A-12,604
75
50
*Includes probe and test fixture
capacitance.
100
AMBIENT TEMPERATURE IN °C
OW9. No. A-12.579
SENSOR-CENTER LOCATION
INCH
PACKAGE OUTLI NE
0.178 HI GH X O. 178 WI DE
MM
4.52 X 4.52
VCC
2-4
GND
OUT
Dwg No. A·12,399A
UGN-3013T AND UGN-3013U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
OPERATION
HEAD-ON MODE
The most common modes of operation are headon and slide-by. As shown in the drawing at right,
the magnet's polar axis is the centerline of the Hall
Effect package. Change of operating states in the
head-on mode is accomplished by decreasing or increasing the distance between the magnet and Hall
cell.
The output transistor is OFF when the flux density
of the magnetic field perpendicular to the surface of
the chip is below threshold (the operate point).
When flux density reaches the operate point, the
output transistor switches ON and is capable of sinking 25 mA of current.
1 2 3
Dwg. No. A-12.603
TRANSFER CHARACTERISTICS
ATTA = +25°C
Note that the device is turned ON by presenting
the south pole of the magnet to the branded face of
the package, which is opposite the side with the ejector pin indentation. With the branded side facing you
and the pins pointing down. pinouts are. from left to
right: (1) Vcc' (2) GND, (3) V our .
12
-
I
---,
1
1
~ 9
I!
I
0
>
z
The output transistor is switched OFF when flux
density of the magnetic field falls below the release
point, which is less than the operate point. Hysteresis, as illustrated in the Transfer Characteristics
graph. prevents ambiguity and oscillation.
1
1
I
I
-<
I~
t3 6
>
12'
~
I~
:::>
1
~ 3
0
13:
n
Ie
~
'"""
3:
0
~
I~
:::>
~
a:
1:;0
0~
I:;::
I~
-<
10
l:u
."
u
I!1
el-
;::
1
TOTAL EFFECTIVE AIR GAP
L _____
~_~
_ _ _~.,.-_--:
o""0----;1"';;;00c;---;;-20;t;0----,3"'00:----;4*'00,------,-50*'0:-----;7;600
Type 3013 Hall Effect switches are offered in two
packages, "T" and" U". The" U" package is about
0.020" (0.05 mm) thinner than the "T" package. The
difference is found in the distance from the surface
of the Hall cell to the branded face of the package:
The active area depth. The "T" pack's active area
depth is 0.036" (0.9 mm); the "U" pack's is 0.016"
I~I
MAGNETIC FLUX DENSITY
GAUSS
MAGNETIC FLUX DENSITY
AS A FUNCTION OF TOTAL EFFECTIVE AIR GAP
Air Gap
=
0.1"
(O.4mm).
600
Total effective air gap is the sum of active area
depth and the distance between the package's surface and the magnet's surface. The graph of Flux
Density as a Function of Effective Air Gap illustrates the considerable increase in flux density at the
sensor provided by the thinner package. The actual
gain depends on the characteristic slope of flux density for a particular magnet.
'"z
;::
~
500
~
~
A wide variety of magnets is commercially available. Each type of magnet exhibits unique magnetic
field characteristics. The magnets used to construct
the Flux Density graph were measured for the headon mode of operation, but the graph's information is
valid for peak flux density in the slide-by mode of
switch activation.
z
'":;0""
0.312"0 x 0.25"
(21 CERAMI C 8
0.24"0 x 0.4"
:\~
~
~
([I ALNI CO 8
~
400
vo
'"x
I
I
I
I
300
'u'
PA1CKAGE
'T'
PA~KAGEI
200
100
I
I
I
I
I
_J
I
I
I
___ ...1
'\~l
'>~ ~
~
o
o
0 05
0 10
0 15
0 20
0 25
O. 30 O. 35
TOTAL EffECTIVE AIR GAP IN INCHES
Iwq.
2-,-5
r,o
_'-i/,'. :1/
UGN-3019T/U AND UGS-3019T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3019T/U AND UGS-3019T/U
LOW-COST HALL EFFECT DIGITAL SWITCHES
FEATURES
•
•
•
•
•
•
4.5 Vto 24 VOperation
Magnetically Driven Output
High Reliability-No Moving Parts
Small Size
Output Compatible with All Digital logic Families
Constant Output Amplitude
Dwg. No. A-ll,002A
ECONOMICAL TYPE 3019 Hall Effect integrated circuits provide fast, clean,and sure
switching under demanding environmental conditions. The magnetically activated electronic devices
are available with two operating temperature ranges
and in two three-pin plastic packages.
FUNCTIONAL BLOCK DIAGRAM
or MOS logic circuits. Selected devices, with outputs capable of sinking 50 rnA, are available on specialorder.
Each Hall Effect circuit includes a voltage regulator, Hall voltage generator, signal amplifier,
Schmitt trigger, and open-collector output on a single silicon chip. The on-board regulator permits operation over the supply-voltage range of 4.5 to 24 V.
Types VGN-3019T and VGN-3019V are rated for
operation over the temperature range of - 20°C to
+85°C. Types VGS-30I9Tand VGS-3019V have an
operating range of - 40°C to + 125°C.
The Hall Effect switches are offered in two threepin plastic packages-a 60-mil (1.54 mm) magnetically optimized "V" package; and one 80 mils
(2.03 mm) thick specified by the suffix "T."
The switches' open-collector outputs can sink up
to 20 rnA at a conservatively rated repetition rate of
100 kHz. They can be used directly with bipolar
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B ........................................ Unlimited
Output OFF Voltage .................................................... 25 V
Output ON Current, ISINK ••••••••••••••••••••••••••••••••••••••••••• 25 mA
Operating Temperature Range, TA
UGN-30 19T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 200 e to + 85°e
UGN-3019U. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20 0 e to + 85°C
UGS-3019T ....................................... - 400 e to + 125°C*
UGS-3019U ....................................... - 400 e to + 125oe*
Storage Temperature Range, Ts ............................ - we to + 150°F
'Selected devices are available with a T, range of - 55°C to + 150°C.
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA)
packages for surface-mount application. The regular SOT 89 package is
specified by substituting an "LT" for the last character of the part
number. The long leaded SOT 89 package is specified by substituting an
"LL" for the last character of the part number and the Low profile "V"
package is available by substituting "VA" for the last character of the
part number (e.g., VGN-3XXX!J:, VGN-3XXXll, VGN-3XXX!!A).
2-6
UGN·3019T/U AND UGS·3019T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS at TA =
Characteristic
Symbol
Operate Point*
Bop
B,p
Release Point*
Hysteresis*
BH
Output Saturation Voltage
VCE(SATJ
Output Leakage Current
10FF
Supply Current
Icc
Output Rise Time
t,
Output Fall Time
t,
+ 25°C, Vee = 4.5 Vto 24 V (unless otherwise noted)
Test Conditions
B~ 500 G, IslN , = 20 mA
B $ 125 G, VOUT = 24 V
= 4.5 V, Output Open
B $ 125 G, Vee = 24 V, Output Open
Vee = 12 V, R, = 8200, C, = 20 pF
Vee = 12 V, R, = 8200, C, = 20 pF
B $ 125 G, Vee
..
Min.
Typ.
Max.
Units
-
420
500
G
125
300
G
50
120
400
mV
G
-
85
-
0.05
10
-
2.3
5.0
fLA
mA
-
3.0
5.0
mA
-
150
-
ns
400
ns
'Magnetic flux density IS measured at most sensitive area of device located at 0.036" ± 0.002" (0.91 mm ± 0.05 mm) below the branded face of the T package
and 0.016" ± 0.002" (0.41 mm ± 0.05 mm) below the branded face of the 'U' package.
GUARANTEED OPERATE AND RELEASE POINTS
AS FUNCTIONS OF TEMPERATURE
-:
600
UGN-3019
.-,
(!)
~
500
I
>>Vl
400
i:5
Cl
x
~
u
E
z
'"
The output transistor is switched OFF when flux
density of the magnetic field falls below the release
point, which is less than the operate point. Hysteresis, as illustrated in the Transfer Characteristics
graph, prevents ambiguity and oscillation.
-c
9
~
f:
~
0:'
5
5o
t
0:
....
'"
",I
~I
>
....
".
p
;0
I:;;
I~
I~
I:;;
,p
""
:1
1,
...
z
".
:E 1
3
n
<
u
0:
~,
Q.
~
I
I
I
I
L ____
0
TOTAL EFFECTIVE AIR GAP
o
Type 3019 Hall Effect switches are offered in two
packages, "T" and" U". The" U" package is about
0.020" (0.05 mm) thinner than the "TOO package. The
difference is found in the distance from the surface
of the Hall cell to the branded face of the package:
The active area depth. The "Too pack's active area
depth is 0.036" (0.9 mm); the "U" pack's is 0.016"
100
200
300
400
500
600
MAGNET! C FLUX DENSITY I N GA~SS
Owg. tlo. A-901SD
MAGNETIC FLUX DENSITY
AS A FUNCTION OF TOTAL EFFECTIVE AIR GAP
Air Gap = QT'
(O.4mm).
Total effective air gap is the sum of active area
depth and the distance between the package's surface and the magnet's surface. The graph of Flux
Density as a Function of Effective Air Gap illustrates the considerable increase in flux density at the
sensor provided by the thinner package. The actual
gain depends on the characteristic slope of flux density for a particular magnet.
~
SOO~--r---~~+-~
u
200~--~--+--r+---+-~~~C---4
z
'u'
I-
PACKAG
L.LI
A wide variety of magnets is commercially available. Each type of magnet exhibits unique magnetic
field characteristics. The magnets used to construct
the Flux Density graph were measured for the headon mode of operation, but the graph's information is
valid for peak flux density in the slide-by mode of
switch activation.
Z
~
~
'T' PACKAGE--J
100~--~--+---+---+---+---+-~
O~~~~~~~~~~__~~
a
O.OS
0.10 O.lS 0.20 0.250.30 0.35
TOTAL EFFECTIVE AIR GAP IN INCHES
DWG. NO. A-12.565
2-8
UGN-3020T/U AND UGS-3020T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3020T/U AND UGS-3020T/U
HALL EFFECT DIGITAL SWITCHES
Vee
FEATURES
•
•
•
•
•
•
4.5 Vto 24 VOperation
Magnetically Driven Output
High Reliability-No Moving Parts
Small Size
Output Compatible with All Digital Logic Families
Constant Output Amplitude
HIGHLY RESPONSIVE magnetic
O FFERING
characteristics and fast, trouble-free switching
Dwg. No. A-ll.002A
at moderate cost, Type 3020 Hall Effect integrated
circuits represent middle ground between less sensitive devices and those demanding premium prices.
The magnetically activated electronic devices are
available with two operating temperature ranges and
in two three-pin plastic packages.
FUNCTIONAL BLOCK DIAGRAM
,or MaS logic circuits. Selected devices, with outputs capable of sinking 50 rnA, are available on specialorder.
Types UGN-3020T and UGN-3020U are rated for
operation over the temperature range of - 20°C to
+ 85°C. Types UGS-3020T and UGS-3020U have an
operating range of -40°C to + 125°C.
Each Hall Effect circuit includes a voltage regulator, Hall vol tage generator, signal amplifier,
Schmitt trigger, and open-collector output on a single silicon chip. The on-board regulator permits operation over the supply-voltage range of 4.5 to 24 V.
The Hall Effect switches are offered in two threepin plastic packages-a 60-mil (1.54 mm) magnetically optimized "U" package, and one 80 mils
(2.03 mm) thick specified by the suffix "T."
The switches' open-collector outputs can sink up
to 20 rnA at a conservatively rated repetition rate of
100 kHz. They can be used directly with bipolar
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B ........................................ Unlimited
Output OFF Voltage .............................................. 25 V
Output ON Current, ISINK ••••••••••••••••••••••••••••••••••••••••••• 25 mA
Operating Temperature Range, TA
UGN-3020T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
UGN-3020U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
UqS-3020T ....................................... - 40°C to + 125°C*
UGS-3020U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 40°C to + l25°C*
Storage Temperature Range, Ts ............................ - 65°C to + 150°C
·Selected devices are available with a T, range of - 55°C to + J50'C.
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA)
packages for surface-mount application. The regular SOT 89 package is
specified by substituting an "LT" for the last character of the part
number. The long leaded SOT 89 package is specified by substituting an
"LL" for the last character of the part number and the Low profile" U"
package is available by substituting "UA" for the last character of the
part number(e.g., UGN-3XXXlI, UGN-3XXX11, UGN-3XXX!JA).
2-9
UGN-3020T/U AND UGS-3020T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
ELECTRICAL CHARAOERISTICS at TA = + 25°C, Vee = 4.5 V to 24 V (unless otherwise noted)
Characteristic
Symbol
Operate Point*
Bop
Release Point*
BRP
Hysteresis*
BH
Output Saturation Voltage
VeE(SAn
Output leakage Current
10FF
Supply Current
Icc
Output Rise Time
t,
Output Fall Time
tf
Test Conditions
= 20 mA
B :5 50 G, VOIJI = 24 V
B :5 50 G, Vee = 4.5 V, Output Open
B:5 50 G, Vee = 24 V, Output Open
Vee = 12 V, Rl = 82011, Cl = 20 pF
Vee = 12 V, Rl = 82011, Cl = 20 pF
B ;::: 350 G, ISINK
Min.
Typ.
Max.
-
220
350
G
50
165
-
G
20
55
-
G
-
85
400
mV
-
0.05
10
2.3
5.0
fLA
mA
3.0
5.0
mA
-
150
-
ns
Units
400
ns
..
*Magnetlc flux density IS measured at most sensItive area of device located at 0.036" ± 0.002" (0.91 mm ± 0.05 mm) below the branded face of the 'T' package
and 0.016" ± 0.002" (0.41 mm ± 0.05 mm) below the branded face of the 'U' package.
TEST CIRCUIT
GUARANTEED OPERATE AND RELEASE POINTS
AS FUNCTIONS OF TEMPERATURE
'"z
>-
15
c
I
300
~
E
UGJ-3020
I
I
I
I
o
-50
I
i
MI N. RELEASE
rOo-25
820n
;
I
I
;
3020
i Ud-3020
I1AX. OPERATE I
II
200
~ 100
~
.. ...
I
x
u
-
500
;:: 400
12 V
o
I
25
50
75
100
125
DWG.
150
NO.
A-12.569
*Includes probe and test fixture
capacitance.
AMBIENT TEMPERATURE IN ·C
Dwg.No. A-12,568
r
0.0B9
SENSOR-CENTER LOCATION
TtW,.-++---"'*"",·
INCH
PACKAGE QUTLI NE
0.178 HIGH X 0.178 WIDE
4.52 X 4.52
MM
VCC
GND
QUT
Dwg. No. A·12.399A
2-10
UGN-3020T/U AND UGS-3020T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
OPERATION
HEAD-ON MODE
The most common modes of operation are headon and slide-by. As shown in the drawing at right,
the magnet's polar axis is the centerline of the Hall
Effect package. Change of operating states in the
head-on mode is accomplished by decreasing or increasing the distance between the magnet and Hall
cell.
The output transistor is OFF when the flux density
of the magnetic field perpendicular to the surface of
the chip is below threshold (the operate point).
When flux density reaches the operate point, the
output transistor switches ON and is capable of sinking 25 rnA of current.
2 3
DWG. NO. A 12,570
p
Note that the device is turned ON by presenting
the south pole of the magnet to the branded face of
the package, which is opposite the side with the ejector pin indentation. With the branded side facing you
and the pins pointing down, pinouts are, from left to
right: (1) Vcc> (2) GND, (3) VOUT'
The output transistor is switched OFF when flux
density of the magnetic field falls below the release
point, which is less than the operate point. Hysteresis, as illustrated in the Transfer Characteristics
graph, prevents ambiguity and oscillation.
TOTAL EFFECTIVE AIR GAP
Type 3020 Hall Effect switches are offered in two
packages. The "U" package is about 0.020" (0.05
mm) thinner than the "T" package. The difference
is found in the distance from the surface of the Hall
cell to the branded face of the package: The active
area depth. The "T" pack's active area depth is
0.036" (0.9 mm); the "U" pack's is 0.016" (0.4 mm).
Total effective air gap is the sum of active area
depth and the distance between the package's surface and the magnet's surface. The graph of Flux
Density as a Function of Effective Air Gap illustrates the considerable increase in flux density at the
sensor provided by the thinner package. The actual
gain depends on the characteristic slope of flux density for a particular magnet.
A wide variety of magnets is commercially available. Each type of magnet exhibits unique magnetic
field characteristics. The magnets used to construct
the Flux Density graph were measured for the headon mode of operation, but the graph's information is
valid for peak flux density in the slide-by mode of
switch activation.
TRANSFER CHARACTERISTICS
ATTA = +25°C
!
12
-<
1
~
Bj
-
~
L:E _
r
o~~~==~~~~
o
100
200
300
400
500
600
MAGNETIC FLUX DENSITY IN GAUSS
Dwg.No. A-ll,OlOA
. MAGNETIC FLUX DENSITY
AS A FUNCTION OF TOTAL EFFECTIVE AIR GAP
Air Gap = 0.1"
5oo.---.-~,,---r---.----.---.---,
(.!)
z
®O~--~--~~~H
~
~ ~0~--~---+-7.r~--+----r--~--~
o
x
:3
... 200 ~--~---+----T-~~+----r--~--~
u
~
~ loo~--~---+----~--+-,,,,,,,:-'l"-=~--~
O~
o
__ __ ____ __ __- L_ _ _ _
0.05
0.10
0.15
0.20
0.25
0.30 0.35
~
~
~
~
~
~
TOTAL EFFECTIVE AIR GAP IN INCHES
DWG. Nt!. A-12.571
UGN-3030T/U AND UGS-3030T/U
SINGLE OUTPUT BIPOLAR HALL EFFECT SWITCHES
UGN-3030T/U AND UGS-3030T/U
BIPOLAR HALL EFFECT DIGITAL SWITCHES
FEATURES
•
•
•
•
•
•
4.5 Vto 24 VOperation
For Use with Multipole Ring Magnets
High Reliability-No Moving Parts
Small Size
Output Compatible with All Digital Logic Families
Constant Output Amplitude
BIPOLAR Type 3030 HalJ Effect integrated circuits cleanly track rotation of multi pole ring
magnets as digital transducers in counter and control
circuits. They provide logic-compatible output free
of ringing or stuttering while operating in contaminated and electrically noisy environments. The magnetically activated electronic switches are available
with two operating temperature ranges and in two
three-pin plastic packages.
Dwg. Na. A-ll.002A
FUNCTIONAL BLOCK DIAGRAM
tition rate of 100 kHz. They can be used directly with
bipolar or MaS logic circuits. Selected devices, with
outputs capable of sinking SO rnA, are available on
sIlecial order.
Types UGN-3030T and UGN-3030U are rated for
operation over the temperature range of - 20°C to
+ 8SoC. Types UGS-3030T and UGS-3030U have an
operating range of -40°C to + 12SoC.
The Hall Effect switches are offered in two threepin plastic packages-a 60-mil (1.S4 mm) magnetically optimized "U" package, and one 80 mils
(2.03 mm) thick specified by the suffix "T."
Each Hall Effect circuit includes a voltage regulator, HalJ voltage generator, signal amplifier,
Schmitt trigger, and open-collector output on a single silicon chip. The on-board regulator permits
operation over the supply-voltage range of 4.S V
to 24 V.
The switches' open-collector outputs can
sink up to 20 rnA at a conservatively rated repe-
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B ........................................ Unlimited
Output OFF Voltage .............................................. 25 V
Output ON Current, ISINK ••••••••••••••••••••••••••••••••••••••••••• 25 rnA
Operating Temperature Range, TA
UGN-3030T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
UGN-3030U ....................................... , - 20°C to + 85°C
UGS-3030T ....................................... - 40°C to + 125°C*
UGS-3030U ........................................ - 40°C to + 125°C*
Storage Temperature Range, Ts ............................ - 65°C to + 150°F
*Selected devices are available with a T, range of - 55°C to
+ 150°C.
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA)
packages for surface-mount application. The regular SOT 89 package is
specified by substituting an .. LT" for the last character of the part
number. The long leaded SOT 89 package is specified by substituting an
"LL" for the last character of the part number and the Low profile "U"
package is available by substituting" UA" for the last character of the
part number (e.g., UGN-3XXXg, UGN-3XXX1J" UGN-3XXX1!A).
2-12
UGN-3030T/U AND UGS-3030T/U
SINGLE OUTPUT BIPOLAR HALL EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS at TA
= + 25°C, Vee = 4.5 Vto 24 V(unless otherwise noted)
Characteristic
Symbol
Operate Point*
Release Point*
Bop
BRP
Hysteresis*
BK
Output Saturation Voltage
VeEISATI
Output Leakage Current
IOFF
Supply Current
lee
Output Rise Time
I,
Test Conditions
C3
z
300
200
j
S;
100
I
~
0
>
z
x
3 -100
.....
c.J
~
-200
~ -300
-400
-50
I
G
-
G
400
10
5.0
5.0
mV
iJ.A
mA
mA
TEST CIRCUIT
12 V
-
8200
I
I
I
I
MI N. RELEASE
0
25
50
:
75
100
-
125
Owg.No. A-12.566
"Includes probe and test fixture
capacitance.
150
AMBIENT TEMPERATURE"!:
Owg. No. A-12.567
1
0.089
2.26
SENSOR-CENTER LOCATION
I ~.~05Q.-I+-
___
~·
INCH
PACKAGE QUTLI NE
0: 178 HIGH X 0.178 WIOE
MM
4.52 X 4.52
VCC
GND
QUT
Dwg. No. A·12.399A
2-13
D
ns
ns
0.05 mm,"'ow th' '""d,",,,. th' T '''....
:
I
-25
-
!UG -3030
MAX. OPERATE
I
~
G
-
-
........" I..... 0.0"" ± 0.00" 10.91 mm ±
1-
:
I
-
250 G, Vee = 4.5 V, Output Open
B s - 250 G, Vee = 24 V, Output Open
Vee = 12 V, RL = 820n, CL = 20 pF
Vee = 12 V, RL = 820n, CL = 20 pF
BS
~".t
UGN-303O
Units
250
-
GUARANTEED OPERATE AND RELEASE POINTS
AS FUNCTIONS OF TEMPERATURE
:::>
'"
Max.
160
1l0t
50
85
0.05
2.3
3.0
150
400
B ~ 250 G, ISINK = 20 mA
BS - 250 G, VOU! = 24 V
and 0.016" ± 0.002" (0.41 mm ± 0.()5 mm) below the branded face of the 'U' package.
tBRP not guaranteed at positive flux density: Bipolar magnetic switching is recommended.
400
Typ.
-250
20
Output Fall Time
tl
...,"", flm d,""" t, mN".d.t mot
'"
Min.
UGN-3030T/U AND UGS-3030T/U
SINGLE OUTPUT BIPOLAR HALL EFFECT SWITCHES
OPERATION
The simplest form of magnet that will operate the
Hall Effect bipolar digital switch is a multipole ring
magnet as shown in Figure 1. The magnet must provide a + 250 gauss to - 250 gauss magnetic flux density range at the sensor to ensure reliable operation.
Such magnets are commercially available and inexpensive.
Under power-up conditions, and in the absence of
an externally applied magnetic field, the output transistor of most Type 3030 switches is ON and capable
of sinking 25 rnA of current. This is, however, a formally ambiguous state and should be treated as
such.
In normal operation, the output transistor turns
ON as the strength of the magnetic field perpendicular to the surface of the chip reaches the Operate
Point. The output transistor switches OFF as magnetic field reversal takes magnetic flux density to the
Release Point.
3
e,
DIfg.No.A-12.572
Figure 1
mm) thinner than the "T" package. The difference
is found in the distance from the surface of the Hall
cell to the branded face of the package: The active
area depth. The "T" pack's active area depth is
0.036" (0.9 mm); the "U" pack's is 0.016" (0.4 mm).
Note that the device is typically turned ON by
presenting the south pole of a magnet to the branded
face of the package, which is opposite the side with
the ejector pin indentation. With the branded side
facing you and the pins pointing down, pinouts are,
from left to right: (1) Vee, (2) GND, (3) VOUT '
Type 3030 Hall Effect switches are offered in two
packages. The "U" package is about 0.020" (0.05
Total effective air gap is the sum of active area
depth and the distance between the package's surface and the magnet's surface. There is a considerable increase in flux density at the sensor provided
by the thinner package. The actual gain depends on
the characteristic slope of flux density for a particularmagnet.
TRANSFER CHARACTERISTICS ATTA = +25°C
I
12 V
--I
I~
:::;;!
LI.J
(.!)
11
1
«
I-
-'
0
0: 1
>
0::.
I-
:2:
:::>
:2:
~
n
I
0:
:::>
0::.
I-
-'
Q..
I
I
:::>
0
:z
- I
:2:
«
u
c..
-
>l-
L
I
-300
I
I
-200
-100
(NORTH POLE)
o
I
»
r-
P
;0
1
I
+100
+200
(SOUTH POLE)
MAGNETI C FLUX DENS lTV IN G
2-14
~
Isc::
Is
Ip
I="
il
I
+300
Dwg. No. A-ll ,040A
UGN-3040T/U AND UGS-3040T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3040T/U AND UGS-3040T/U
ULTRA-SENSITIVE HALL EFFECT DIGITAL SWITCHES
FEATURES
•
•
•
•
•
•
Vee
4.5 Vto 24 VOperation
Switched by Small Permanent Magnets
High Reliability-No Moving Parts
Small Size
Output Compatible with All Digital Logic Families
Constant Output Amplitude
SENSITIVITY of Type 3040
T HEHallEXTREME
Effect switches recommends their use with
small. inexpensive magnets or in applications requiring relatively large distances between magnet
and Hall cell. The magnetically activated electronic
devices are available with two operating temperature ranges and in two three-pin plastic packages.
Owg. No. A-ll.002A
FUNCTIONAL BLOCK DIAGRAM
They can be used directly with bipolar or MaS logic
circuits. Selected devices, with outputs capable of
sinking 50 rnA. are available on special order.
Each Hall Effect circuit includes a voltage regulator, Hall voltage generator, signal amplifier,
Schmitt trigger, and open-collector output on a single silicon chip.
Types UGN-3040T and UGN-3040U are rated for
operation over the temperature range of - 20 0 e to
+ 85°C. Types UGS-3040T and UGS-3040U have an
operating range of -40 o e to + 125°e.
The on-board regulator permits operation over a
wide range of supply voltages. All four les work
with supply voltages of 4.5 to 24 V.
The Hall Effect switches are offered in two threepin plastic packages-a 60-mil 0.54 mm) magnetically optimized "U" package, and one 80 mils
(2.03 mm) thick specified by the suffix "T".
The switches' output can sink up to 20 rnA at a
conservatively rated repetition rate of 100 kHz.
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B ........................................ Unlimited
Output OFF Voltage .............................................. 25 V
Output ON Current, ISINK ••••••••••••••••••••••••••••••••••••••••••• 25 mA
Operating Temperature Range, T,
UGN-3040T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
UGN-3040U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + WC
UGS-3040T ....................................... - 40°C to + 125°C*
UGS-3040U ....................................... - 40°C to + 125°C*
Storage Temperature Range, Ts ............................ - WC to + 150°C
*Selected devices are available with a T, range of - 55°C to + 150°C.
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA)
packages for surface-mount application. The regular SOT 89 package is
specified by substituting an "LT" for the last character Qf the part
number. The long leaded SOT 89 package is specified by substituting an
"LL" for the last character of the part number and the Low profile "U"
package is available by substituting "UA" for the last character of the
part number (e.g., UGN-3XXX1,I, UGN-3XXX!J:, UGN-3XXX!l.A).
2-15
UGN-3040TIU AND UGS-3040TIU
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
= +25°(, Vcc = 4.5 V to 24 V (unless otherwise noted)
ELEORICAL (HARAOERISTI(S at TA
Characteristic
Symbol
Operate Point*
Bop
BRP
Release Point*
Test Condtions
BH
Output Saturation Voltage
Output Leakage Current
VCEISAn
IOFF
Supply Current
Icc
t,
Output Fall Time
t,
Typ.
Max.
Units
-
150
100
50
85
0.05
2.3
3.0
150
400
200
G
-
G
-
G
400
10
5.0
5.0
mV
-
ns
50
20
Hysteresis·
Output Rise Time
Min.
-
B;?: 200 G, ISINK = 20 rnA
B:5 50 G, VOUT = 24 V
B:5 50 G, Vee = 4.5 V, Output Open
B:5 50 G, Vee = 24 V, Output Open
Vee = 12 V, Rl = 820n, Cl = 20 pF
Vee = 12 V, Rl = 820n, Cl = 20 pF
-
-
-
f.l.A
rnA
rnA
ns
*Magneticflux density is measured at most sensitive area of device located 0.036" ± 0.002" (0.91 mm ± 0.05 mm) below the branded face of the T package
and 0.016" ± 0.002" (0.41 mm ± 0.05 mm) below the branded face of the 'U' package.
OPERATE AND RELEASE POINTS
AS FUNCTIONS OF TEMPERATURE
TEST CIRCUIT
12 V
~
t""--- ~
I
I
200
-..........
\lGJ311AO -
~,......
-
-. \ld~
-~
I
I
I
I
I
MAX. OPERATE
I
I
100
n
-40
-25
I
I
MI N. RELEASE
I
----
UGN-3040- 'j
o
25
50
AMBIENT TEMPERATURE IN
°c
8200
UGS-304O
Owg. No. /1.-12.39711.
75
100
125
*Includes probe and test fixture
capacitance.
Dwg. No. A-12.398A
SENSOR-CENTER LOCATION
INCH
PACKAGE OUTLINE
0:178 HIGH x 0.178 WIDE
MM
4.52 X 4.52
VCC
GND
OUT
Owg. No. A·12.399A
2-16
UGN-3040T/U AND UGS-3040T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
OPERATION
The most common modes of operation are head:
on and slide-by. As shown in the drawing at right,
the magnet's polar axis is the centerline of the Hall
Effect package. Change of operating states in the
head-on mode is accomplished by decreasing or increasing the distance between the magnet and Hall
cell.
The output transistor is OFF when the flux density
of the magnetic field perpendicular to the surface of
the chip is below threshold (the operate point).
When flux density reaches the operate point, the
output transistor switches ON and is capable of sinking 25 rnA of current.
Note that the device is turned ON by presenting
the south pole of the magnet to the branded face of
the package, which is opposite the side with the ejector pin indentation. With the branded side facing you
and the pins pointing down, pinouts are, from left to
right: (1) V ce, (2) GND, (3) VOUT'
The output transistor is switched OFF when flux
density of the magnetic field falls below the release
point, which is less than the operate point. Hysteresis, as illustrated in the Transfer Characteristics
graph, prevents ambiguity and oscillation.
HEAD-ON MODE
1 2
3
~.No."-12.420
TRANSFER CHARACTERISTICS
ATTA = +25°C
12
I
I
V>
~
§:q
:=
1:
....
c.:>
-<
.,:1
",I
..... 1
51
0::1
~ 6
0
>
I-
::::>
a.
-<
:!:!
n
....
""
p
~I
!:;3
0
="
I
I
I
I
TOTAL EFFECTIVE AIR GAP
Type 3040 Hall Effect switches are offered in two
packages, "T" and "U". The "U" package is about
0.020" (0.05 mm) thinner than the "T" package. The
difference is found in the distance from the surface
of the Hall cell to the branded face of the package:
The active area depth. The "T" pack's active area
depth is 0.036" (0.9 mm); the "U" pack's is 0.016"
25
0....9. No. A-ll.199A
MAGNETIC FLUX DENSITY
AS A FUNCTION OF TOTAL EFFECTIVE AIR GAP
Clearance = 0.08"
400 1-lr'I-~=====::::C==:::::;--'
(O.4mm).
Total effective air gap is the sum of active area
depth and the distance between the package's surface and the "magnet's surface. The graph of Flux
Density as a Function of Effective Air Gap illustrates the considerable increase in flux density at the
sensor provided by the thinner package. The actual
gain depends on the characteristic slope of flux density for a particular magnet.
A wide variety of magnets is commercially available. Each type of magnet exhibits unique magnetic
field characteristics. The magnets used to construct
the Flux Density graph were measured for the headon mode of operation, but the graph's information is
valid for peak flux density in the slide-by mode of
switch activation.
50 75 100 125 150 175 200
MAGNETI C FLUX DENS ITV IN G
-
l-
III PlASTAllOY
0.25" x 0.25" x O. 125"
(21 ALNICO 8
O. 125" D x 1. 0"
(31 SAMARI UM COBOlT
0.08" x 0.08" x 0.04"
V">
15
CI
x
200~-----+--~\-H-~~~~____~____~
:3
u..
u
E
~ 100 ~----1-----+---';3oo,.-+_..::!o__+=:'!!!!ooo~,.---l
~
°O~--~~-~-~~-~);~~
0.05
O. 10
O. 15
O. 20
O. 25
TOTAL EFFECTIVE AIR GAP IN INCHES
Dwg. No. A-12,400
2-17
UGN-3113T AND UGN-3113U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN·3113T AND UGN·3113U
HALL EFFECT SWITCHES
FEATURES
•
•
•
•
•
•
4.5 Vto 24 VOperation
High Reliability-No Moving Parts
Constant Output Amplitude
Output Compatible with All Digital logic Families
Superior Temperature Stability
Highly Resistant to Physical Stress
FUNCTIONAL BLOCK DIAGRAM
Vee
Type 3113 Hall Effect switches are highly temperature-stable and stress-resistant sensors best utilized in applications that provide steep magnetic
slopes and low residual levels of magnetic flux density.
Each Hall Effect circuit includes a voltage regulator, quadratic Hall voltage generator, temperature
stability circuit, signal amplifier, Schmitt trigger,
and open-collector output on a single silicon chip.
The on-board regulator permits operation with supply voltages of 4.5 to 24 V. The switches' output can
sink up to 20 rnA at a conservatively-rated repetition
rate of 100 kHz. They can be used directly with bipolar or MOS logic circuits. Selected devices, with
outputs capable of sinking 50 rnA, are available on
special order.
Dwg. No. A-l1.002A
Type 3113 is also available in SOTS9 (TO-243AA)
for surface mount applications as UGN-3113LL and
UGN-31 \3LT. Contact the factory for more information.
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vec . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B ..................... Unlimited
Output OFF Voltage ........................... 25 V
Output ON Current, ISINK •••••••••••••••••••••••• 25 mA
Operating Temperature Range, TA
UGN-3113-T " " " " " " " " " " - 20°C to + 85°C
UGN-3113-U . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts ........ - 65°C to + 150°C*
Types UGN-3113T and UGN-3113 U are rated for
operation over the temperature range of - 20°C to
+S5°C.
The Hall Effect switches are offered in two threepin plastic packages-a 60-mil (1.54 mm) magnetically-optimized "U" package, and one SO mils
(2.03 mm) thick specified by the suffix "T."
·Devices can be stored at + 2DDoC for short periods of time.
These Hall Effect sensors are also supplied in a Low profile "U" package. The low profile "U" is specified by substituting a "UA" for the
last character of the part number.
2-18
UGN-3113T AND UGN-3113U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Symbol
Supply Voltage
Vee
Output Saturation Voltage
VeEI,,!)
Output Leakage Currrent
10ff
Supply Current
Output Rise Time
lee
t,
Output Fall Time
tl
= + 25°C, Vee = 4.5 Vto 24 V (unless otherwise noted)
Test Conditions
= 20 rnA
B ~ 50G, Vour = 24 V
B ~ 50G, Vee = 4.5 V, Output Open
Vee = 12 V, Rl = 8200, Cl = 20 pF
Vee = 12 V, Rl = 8200, C, = 20 pF
B ." 200G, ISINK
Min.
Typ.
4.5
-
24
V
-
150
400
mV
0.05
10
f.LA
4.7
8.0
rnA
-
0.04
2.0
f.Ls
-
0.18
2.0
f.Ls
Max.
Units
MAGNETIC CHARACTERISTICS
TA = +25°C
TA = - 20°C to + 85°C
Characteristic
Symbol
Operate Point
Bop
Release Point
BRP
30
20
G
Hysteresis
BH
20
10
G
Min.
Max.
Min.
450
Max.
Units
510
G
TEST CIRCUIT
SENSOR LOCATION
12V
r- ~'~:~
0.089
2.26
3113
IN
MM
8201l
Dwg. No.A-14.469
*Includes probe and text fixture
capacitance.
Vee
GND
OUT
SENSOR
AREA
Dwg. No. W-173A
2-19
UGN-3113T AND UGN-3113U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
TYPICAL CHARACTERISTICS
AS FUNCTIONS OF TEMPERATURE
--
OPERATE POINT
400
""---
en
en
~ 300
(9
~
!z
6
c..
RELEASE POINT
400
---
"""-
en
en
~ 300
(9
~
!z
200
~
w
----
w
~
w 100
t(
ffi
200
100
.J
c..
W
a:
o
o
-40
o
40
80
120
160
o
200
-40
o
AMBIENT TEMPERATURE IN 'c
40
80
120
AMBIENT TEMPERATURE IN'C
Dwg. No. W-199
Dwg. No. W-200
OUTPUT SATURATION VOLTAGE
SUPPLY CURRENT
6.0
200
«
180
5.5
E
~
5.0
f-
> 160
E
~
~w 140
()
>
120
100
-40
200
160
o
40
-----
80
120
zw
a:
a: 4.5
:::>
,.-
160
............
b-...
C)
~
--...
4.0
c..
c..
r--- r-
;--- r-
:::>
en
3.5
3.0
-40
200
o
AMBIENT TEMPERATURE IN'C
40
80
120
200
160
AMBIENT TEMPERATURE IN 'C
Dwg. No W-167
Dwg. No. W-176
GUIDE TO INSTALLATION
280
I. All Hall Effect integrated circuits are susceptible to
mechanical stress effects. Caution should be exercised
to minimize the application of stress to the leads or the
epoxy package. Use of epoxy glue is recommended. Other
types may deform the epoxy package.
I-'
~
260
w
a:
:::> 240
t(
a:
w
c.. 220
:2
w
2. To prevent permanent damage to the Hall cell, heatsink the leads during hand-soldering. Recommended
maximum conditions for wave soldering are shown in the
graph at right.
------ r-----.
fa: 200
w
0
.J
1il
T
o
5
10
15
TIME IN SOLDER BATH IN SECONDS
Dwg. No. A-12,062
2-20
UGN-3119T/U AND UGS-3119T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3119T/U AND UGS-3119T/U
HALL EFFECT SWITCHES
FEATURES
•
•
•
•
•
•
4.5Vto 24V Operation
High Reliability-No Moving Parts
Constant Output Amplitude
Output Compatible with All Digital Logic Families
Superior Temperature Stability
Highly Resistant to Physical Stress
FUNCTIONAL BLOCK DIAGRAM
Vee
Type 3119 Hall Effect switches are highly temperaturestable and stress-resistant sensors best utilized in appJications that provide steep magnetic slopes and low
residual levels of magnetic flux density. The magnetically
activated integrated circuits are available with two operating temperature ranges and with several package
options.
Dwg. No. A·l1 ,002 A
Each Hall Effect circuit includes a voltage regulator,
quadratic Hall voltage generator, temperature stability
circuit, signal amplifier, Schmitt trigger, and opencollector output on a single silicon chip. The on-board
regulator permits operation with supply voltages of 4.S
to 24 V. The switches' output can sink up to 20 rnA at a
conservatively rated repetition rate of 100kHz. They can
be used directly with bipolar or MOS logic circuits.
Selected devices, with outputs capable of sinking SO rnA,
are available on special order.
and in a hermetically sealed three-pin ceramic package. A high-temperature hermetic device supplied
with Sprague HYREL® screening is available as UGS3119HH. For more information on surface-mount
and hermetic switches, contact the factory.
ABSOLUTE MAXIMUM RATINGS
Types UGN-3119T and UGN-3119U are rated for
operation. over the temperature range of - 20°C to
+ 8SoC. Types UGS-3119T and UGS-3119U have an
operating range of - 40°C to + 12SoC.
Power Supply, Vee .......................................... 25V
Magnetic Flux Density, B ............................... Unlimited
Output OFF Voltage ......................................... 25 V
Output ON Current, ISINK ....•.••..••••••••..••.•.••.•••••• 25mA
Operating Temperature Range, TA
UGN-3119T ...... ...... ...... .... .. .. .. ... - 20°C to + 85°C
UGN-3119U .............................. -20°Cto + 85°C
UGS-3119T .............................. -40°Cto +125°C
UGS-3119U .............................. - 40°C to + 125°C
Storage Temperature Range, Ts ............ - 65°C to + 150°C •
The Hall Effect switches are offered in two three-pin
plastic packages-a 60-mil (l.S4mm) magnetically
optimized "U" package, and one 80 mils (2.03 mm) thick
specified by the suffix "T."
.
Type 3119 is also available in SOT 89 (TO-243AA)
for surface-mount applications as UGN-3lI9LT and
UGN-3119LL and UGS-3119LT and UGS-3119LL,
*Devices can be stored at + 200'C for short periods of time.
*'Selected devices available with TA Range of - 55'C to + 170'C.
These Hall Effect sensors are also supplied in a Low profile "U" package. The low profile "U" is specified by substituting a "UA" for the
las~ character of the part number.
2-21
UGN-3119T/U AND UGS-3119T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS at TA =
Characteristic
Supply Voltage
Output Saturation Voltage
Output Leakage Current
+ 25°C, Vee
Symbol
= 4.5 Vto 24 V (unless otherwise noted)
Test Conditions
Vee
VeE (sat)
B;;" 200G, ISINK = 20mA
Supply Current
IOFF
lee
B~ 50G, Your = 24V
B~ 50G, Vee = 4.5V, Output Open
Output Rise Time
Output Fall Time
tr
tf
Vee = 12V, RL
Vee = 12V, RL
= 820n, CL = 20pF
= 820n, CL = 20pF
Min.
4.5
Typ.
Max.
Units
-
-
150
0.05
24
400
10
V
mV
4.7
0.04
0.18
-
8.0
fLA
mA
2.0
2.0
fLS
fLS
MAGNETIC CHARACTERISTICS
Characteristic
Operate Point
TA = + 25°C
Min.
Max.
Symbol
Release Point
Hysteresis
Bop
BRP
175
125
BH
50
500
450
-
TA = - 20°C to + 85°C
Min.
Max.
TA
= - 40°C to + 125°C
Min.
Max.
Units
575
G
G
G
100
50
545
495
45
25
555
50
-
20
-
SENSOR LOCATION
TEST CIRCUIT
12V
3119
820n
Dwg. No. W-19B
*Includes probe and test fixture
capacitance.
Vee
GND
OUT
SENSOR
AREA
Dwg. No. W-173A
2-22
UGN-3119T/U AND UGS-3119T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
TYPICAL CHARACTERISTICS
AS FUNCTIONS OF TEMPERATURE
OPERATE POINT
400
en
en
r--r--
~ 300
(9
~
RELEASE POINT
--
400
-
en
en 300
::J
«
I'-
~
f-
f-
Z
on..
z 200
200
00-
w
!«
ffi
---
(9
W
en
«
w
100
100
r-r-
...J
n..
w
a:
o
o
-40
o
40
80
120
160
o
200
o
-40
40
AMBIENT TEMPERATURE IN °C
80
120
Dwg No W·199
Dwg No. W-200
OUTPUT SATURATION VOLTAGE
SUPPLY CURRENT
6.0
200
180
-
140
L-- ~
120
100
-40
5.5
~
fZ
5.0
a:
a:
4.5
~
4.0
w
~
w
«
E
> 160
E
>"
200
160
AMBIENT TEMPERATURE IN °C
o
40
80
120
::J
U
~
160
0-
"-...... r--..
n..
--r---.t-
r-- t-
::J
en
3.5
3.0
- 40
200
o
AMBIENT TEMPERATURE IN C
40
120
80
160
200
AMBIENT TEMPERATURE IN C
Dwg No W-167
Dwg No W-176
GUIDE TO INSTALLATION
280
1. All Hall Effect integrated circuits are susceptible to
mechanical stress effects. Caution should be exercised
to minimize the application of stress to the leads or the
epoxy package. Use of epoxy glue is recommended. Other
types may deform the epoxy package.
2. To prevent permanent damage to the Hall cell, heatsink the leads during hand-soldering. Recommended
maximum conditions for wave soldering are shown in the
graph at right.
u
~
260
::J
240
w
a:
!«
a:
---r-----
w 220
:;:;
0-
~
W
f-
a: 200
w
0
...J
0
en
'T
o
5
10
15
TIME IN SOLDER BATH IN SECONDS
Dwg No. A-12,062
UGN-3120T/U AND UGS-3120T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3120T/U AND UGS-3120T/U
HALL EFFECT SWITCHES
FEATURES
·4.5Vt024VOperation
• High Reliability-No Moving Parts
• Constant Output Amplitude
• Output Compatible with All Digital Logic Families
• Superior Temperature Stabil ity
• Highly Resistant to Physical Stress
FUNCTIONAL BLOCK DIAGRAM
Vee
Type 3120 Hall Effect switches are highly temperaturestable and stress-resistant sensors best utilized in applications that provide steep magnetic slopes and require
precise switch points. The magnetically activated integrated circuits are available with two operating temperature ranges and with several package options.
DWG NO A·l1.002A
Each Hall Effect circuit includes a voltage regulator,
quadratic Hall voltage generator, temperature stability
circuit, signal amplifier, Schmitt trigger, and opencollector output on a single silicon chip. The on-board
regulator permits operation with supply voltages of 4.5
to 24 V. The switches' output can sink up to 20 mA at a
conservatively rated repetition rate of 100 kHz. They can
be used directly with bipolar or MOS logic circuits.
Selected devices, with outputs capable of sinking 50mA,
are available on special order.
and in a hermetically sealed three-pin ceramic package. A high-temperature hermetic device supplied
with Sprague HVREL' screening is available as UGS3120HH. For more information on suli~lce-mount
and herl11etic switches, contact the factory.
ABSOLUTE MAXIMUM RATINGS
Types UGN-3120T and UGN-3120U are rated for
operation over the temperature range of - 20 0 e to
+ 85°e. Types UGS-3120T and UGS-3120U have an
operating range of - 40 0 e to + 125°C.
Power Supply, Vee .......................................... 25V
Magnetic Flux Density, B ............................... Unlimited
Output OFF Voltage ......................................... 25V
Output ON Current, ISINK .................................. 25 mA
Operating Temperature Range, TA
UGN·3120T ............................... -20°Cto + 85°C
UGN·3120U .............................. - 20°Cto + 85°C
UGS·3120T .............................. -40°Cto +125°C
UGS·3120U .............................. -40°Cto +125°C
Storage Temperature Range, Ts ............ - 65°Cto +150°C '
The Hall Effect switches are offered in two three-pin
plastic packages-a 60-mil (1.5401111) magnetically
optimized "U" package, and one 80 mils (2.03 mill) thick
specified by the suffix "T".
Type 3120 is also available in SOT 89 (TO-243AA)
for surface-mount applications as UGN-3120LT and
UGN-3120LL and UGS-3120LTand UGS-3120LL,
'Devices can be stored at + 200°C for short periods of time.
"Selected devices available with T, range of - 55°C to + 170°C.
These Hall Effect sensors are also supplied in a Low profile "U" package. The low profile" U" is specified by substituting a .. U A" for the
last character of the part number.
2-24
UGN-3120T/U AND UGS-3120T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
= + 25°C, Vee = 4.5 Vto 24 V (unless otherwise noted)
ELECTRICAL CHARAOERISTICS at TA
Characteristic
Supply Voltage
Output Saturation Voltage
Output Leakage Current
Symbol
Test Cond itions
Vee
VeE (sat)
B"" 200G, ISINK = 20mA
B~ 50G, VOUT = 24V
B~ 50G, Vee = 4.5V, Output Open
IOFF
lee
t,
Supply Current
Output Rise Time
Output Fall Time
Vee
Vee
tf
Max.
24
400
Units
10
8.0
2.0
f.l.A
mA
-
4.7
0.04
-
0.18
2.0
f.l.S
Min.
4.5
Typ.
-
150
0.05
-
-
= 12V, RL = 820.0., CL = 20pF
= 12V, RL = 820.0., CL = 20pF
V
mV
f.l.s
MAGNETIC CHARAOERISTICS
Characteristic
Symbol
Operate Point
Release Point
Hysteresis
Bop
BRP
BH
TA =
Min.
70
50
20
TEST CIRCUIT
+ 25°C
TA
=
-20°Cto
+ 85°C
=-
TA
40°C to
+ 125°C
Max.
Min.
Max.
Min.
Max.
Units
350
330
70
50
20
425
405
35
25
20
450
430
G
G
G
-
-
-
SENSOR LOCATION
12V
3120
820.0.
Dwg. No. W·177
*Includes probe and test fixture
capacitance.
Vee
GND
OUT
SENSOR
AREA
Dwg. No. W-173A
UGN-3120T/U AND UGS-3120T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
TYPICAL CHARACTERISTICS
AS FUNCTIONS OF TEMPERATURE
OPERATE POINT
RELEASE POINT
400
400r---~-----r----.-----~---'----~
CJ)
CJ)
~
CJ)
CJ)
~
300
(.!)
~
I-
Z
6D.
300r----+-----r----+-----+---~----~
(.!)
~
!z
200
6
D.
W
200F'---
W
~
!"
140
120
100
-40
5.0
W
~
w
5.5
E
> 160
E
!
«
~
IZ
o
40
-----
80
120
160
ex:
ex: 4.5
.............
r--....
.........
::J
()
~
4.0
D.
D.
-.......-....
I--.
r------ r-
::J
CJ)
3.5
3.0
-40
200
o
AMBIENT TEMPERATURE IN ·C
40
80
120
200
160
AMBIENT TEMPERATURE IN ·C
Dwg. No. W-167
Dwg. No. W·176
GUIDE TO INSTALLATION
280
L All Hall Effect integrated circuits are susceptible to
mechanical stress effects. Caution should be exercised
to minimize the application of stress to the leads or the
epoxy package. Use of epoxy glue is recommended. Other
types may deform the epoxy package.
~
2. To prevent permanent damage to the Hall cell, heatsink the leads during hand-soldering. Recommended
maximum conditions for wave soldering are shown in the
graph at right.
I-
~
--
260
w
ex:
::J
240
!E 160
z
w
a:
a:
~
~ 140
>
4.5
:::l
w
(J
120
100
-40
160
E
z
w
a:
a:
~
140
>
120
100
-40
200
SUPPLY CURRENT
180
w
160
6.0
200
(J
'"
~
120
AMBIENT TEMPERATURE IN °C
AMBIENT TEMPERATURE IN °C
!
80
o
40
-------
80
120
...-
160
4.5
::>
........... r--...
()
~
4.0
CL
CL
--1----
r--- t--
::>
en
3.5
3.0
-40
200
o
AMBIENT TEMPERATURE IN °C
40
80
120
160
200
AMBIENT TEMPERATURE IN °C
Dwg. No. W-176
Dwg. No. W-167
GUIDE TO INSTALLATION
280
I. All Hall Effect integrated circuits are susceptible to
mechanical stress effects. Caution should be exercised
to minimize the application of stress to the leads or the
epoxy package. Use of epoxy glue is recommended. Other
types may deform the epoxy package_
2. To prevent permanent damage to the Hall cell, heatsink the leads during hand-soldering_ Recommended
maximum conditions for wave soldering are shown in the
graph at right.
~
-----
260
w
a:
::> 240
!cc
a:
is:::;
220
~
w
~ 200
w
g
I
o
5
10
15
TIME IN SOLDER BATH IN SECONDS
Dwg. No. A-12.062
2-32
UGN·3140T/U AND UGS·3140T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3140T/U AND UGS-3140T/U
ULTRA-SENSITIVE HALL EFFECT SWITCHES
r--------------------
FEATURES
"
"
"
"
•
•
FUNCTIONAL BLOCK DIAGRAM
4.5Vto 24V Operation
High Reliability-No Moving Parts
Constant Output Amplitude
Output Compatible with All Digital Logic Families
Superior Temperature Stability
Highly Resistant to Physical Stress
Vee
The extreme sensitivity of Type 3140 Hall Effect switches
recommends their use. with small, inexpensive magnets
or in applications requiring relatively large distances
between magnet and Hall cell. The magnetically activated
electronic devices are available with two operating temperature ranges and with several package options.
Dwg No. A-l1 ,002 A
UGN-3140LL and UGS-3140LT and UGS-3l40LL,
and in a hermetically sealed three-pin ceramic package. A high-temperature hermetic device supplied
with Sprague HYREL" screening is available as UGS3140HH. For more information on surface-mount
and hermetic switches, contact the factory.
Each Hall Effect circuit includes a voltage regulator.
quadratic Hall voltage generator, temperature stability
circuit, signal amplifier, Schmitt trigger, and open-collector output on a single silicon chip.
The on-board regulator permits operation with supply
voltages of4.5 to 24 V. The switches' output can sink up
to 20mA at a conservatively rated repetition rate of
100kHz. They can be used directly with bipolar or MOS
logic circuits. Selected devices, with outputs capable of
sinking 50mA, are available on special order.
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vee .......................................... 25V
Magnetic Flux Density, B ............................... Unlimited
Output OFF Voltage ......................................... 25V
Output ON Current, ISINK .................................. 25mA
Operating Temperature Range, TA
UGN·3140T ............................... - 20°C to + 85°C
UGN·3140U .............................. - 20°C to + 85°C
UGS·3140T .............................. - 40°C to + 125°C
UGS·314oU .............................. - 40°C to + 125°C
Storage Temperature Range, Ts ............ - 65°Cto + 150°C *
Types UGN-3140T and UGN-3l40U are rated for
operation over the temperature range of - 20°C to
+ 85°C. Types IfGS-3140T and UGS-3140U have an
operating range of -40°C to + 125°C.
The Hall Effect switches are offered in two three-pin
plastic packages-a 60-mil (1.54 mm) magnetically
optimized "U" package. and one 80 mils (2.03 mm) thick
specified by the suffix "T".
Type 3140 is also available in SOT 89 (TO-243AA)
for surface-mount applications as UGN-3140LT and
'Devices can be stored at + 200°C for short periods of time.
"Selected devices available with T, range of - 55°C to + 170°C.
These Hall Effect sensors are also supplied in a Low profile "U" package. The low profile "U" is specified by substituting a "UA" for the
last character of the part number.
2-33
UGN-3140T/U AND UGS-3140T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS at TA = + 25°C, Vee = 4.5 Vto 24 V (unless otherwise noted)
Characteristic
Supply Voltage
Symbol
Test Conditions
Output Saturation Voltage
Output Leakage Current
VeEls.t)
IOFF
lee
tr
tf
Min.
4.5
-
Vee
Supply Current
Output Rise Time
Output Fall Time
B"" 200G, ISINK = 20mA
B,,;; 50G, VO UT = 24V
B,,;; 50G, Vee = 4.5V, Output Open
Vee = 12V, RL = 8200, CL = 20pF
Typ.
150
0.05
4.7
0.04
0.18
-
Vee = 12V, RL = 8200, CL = 20pF
Max.
24
400
10
8.0
2.0
2.0
-
-
Units
V
mV
/LA
mA
/Ls
/Ls
MAGNETIC CHARACTERISTICS
Characteristic
Operate Point
Release Point
Hysteresis
Symbol
Bop
BRP
BH
TA =
Min.
70
50
20
+ 25°C
Max.
200
180
-
TA = - 20°C to + 85°C
Min.
Max.
45
260
25
240
-
20
TEST CIRCUIT
TA = -40°Cto
Min.
45
25
20
+ l25°C
Max.
270
250
-
SENSOR LOCATION
12V
3140
820n
Dwg. No. W·172
*Includes probe and test fixture
capacitance.
SENSOR
Vee
GNO
OUT
AREA
Dwg. No. W-173A
2-34
Units
G
G
G
UGN-3140T/U AND UGS-3140T/U
SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES
TYPICAL CHARACTERISTICS
AS FUNCTIONS OF TEMPERATURE
OPERATE POINT
RELEASE POINT
200
200
en
en
~
150
r-- :---
(!)
~
!zo
en
en
r--- r---
100
~ 150
-
(!)
~
t-
Z
a..
0a..
!;(
«
w
w
-
w
w
a:
100
en
50
50
...J
W
a..
a:
a
o
-40
o
40
80
120
160
0
-40
200
40
0
AMBIENT TEMPERATURE IN °C
120
80
160
Dwg. No. W-174
Dwg. No. W·175
OUTPUT SATURATION VOLTAGE
SUPPLY CURRENT
6.0
200
«
180
5.5
E
~
z
.............
w
a:
a:
~
>"
5.0
t-
> 160
E
~
w
4.5
::::l
140
t...--
120
100
-40
200
AMBIENT TEMPERATURE IN °C
o
40
80
----
120
........
()
~
160
~
--.
4.0
a..
a..
r-- r-
r--- -
::::l
en
3.5
3.0
-40
200
o
AMBIENT TEMPERATURE IN °C
40
80
120
160
200
AMBIENT TEMPERATURE IN °C
Dwg. No. W-176
OWlj No. A W-167
GUIDE TO INSTALLATION
280
1. All Hall Effect integrated circuits are susceptible to
mechanical stress effects. Caution should be exercised
to minimize the application of stress to the leads or the
epoxy package. Use of epoxy glue is recommended. Other
types may deform the epoxy package.
~
260
w
a:
::::l
!;(
240
a:
~ 220
:2
w
2. To prevent permanent damage to the Hall cell, heatsink the leads during hand-soldering. Recommended
maximum conditions for wave soldering are shown in the
graph at right.
----- r-----
~ 200
w
g
aen
1o
5
15
10
TIME IN SOLDER BATH IN SECONDS
Dwg. No. A·12,062
2-35
UGN-3201K
DUAL OUTPUT UNIPOLAR HALL EFFECT SWITCH
UGN-3201K
DUAL OUTPUT HALL EFFECT DIGITAL SWITCH
FEATURES
•
•
•
•
•
Operate with a Small Permanent Magnet
High Reliability-No Contact Wear or Bounce
Small Size-4-Pins SIP
Constant Amplitude Output
Dual Open-Collector Outputs
Intended for use in position sensing and contactless
switching applications, the UGN-320IK switch utilizes the Hall Effect for detecting a magnetic field.
Dwg. No. A-U.Ol3
It is supplied in a four-pin single in-line plastic
package. The switch was originally introduced as
ULN-3006.
FUNCTIONAL BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vcc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Magnetic Flux Density, B ........................................ Unlimited
Output OFF Voltage, VOUT(OFFJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 V
Output ON Current, ISINK ........................................... 25 mA
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20 a Cto + 85 a C
Storage Temperature Range, Ts ., .......................... - 65 aCto + 150a C
ELECTRICAL CHARACTERISTICS at TA
= + 25°C, Vee = 4.5 Vto 16 V
Limits
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Operate Point
Bop
-
450
750
G
Release Point
BRP
100
300
-
G
Hysteresis
BH
-
150
-
-
400
G
Output Saturation Voltage
VCEISATJ
B 2: 450 G, ISINK
Output Leakage Current
10FF
B:5 100 G
-
-
10
fLA
Supply Current
IcclII
B :5 100 G, Outputs Open
-
20
25
mA
Iccl2l
B 2: 450 G, Outputs Open
-
20
25
mA
4.5
-
16
V
Supply Voltage
=
20 mA
Vcc
2-36
mV
UGN-3201K
DUAL OUTPUT UNIPOLAR HALL EFFECT SWITCH
OPERATION
TYPICAL TRANSFER CHARACTERISTICS
The output transistors are normally OFF when the
magnetic field perpendicular to the surface of the
chip is below the threshold or operate point. As magnetic flux density passes the operate point, the output transistors switch ON and will each sink 20 rnA.
TYPE UGN·3201 K
....
'"
12
0
>
I
~ 9
,
0
«
The output transistors switch OFF as magnetic
flux density falls below the release point, which is
less than the operate point. This is illustrated graphically in the transfer characteristic curves. The hysteresis characteristic provides for unambiguous and
non-oscillatory switching, regardless of the rate of
change of the magnetic field.
I
t:
':::; 6
0
>
=>
0
The simplest form of magnet that will operate the
Hall Effect digital sensor is a bar magnet as shown.
Other methods are possible. In the illustration, the
magnet's axis is on the center line of the packaged
device and the magnet is moved toward and away
from the device. Also note the orientation of the
magnet's south pole in relation to the face of the
package.
~:
I
I
23
....
a.p.
I
I
I
I
a
I
I
I
I
II
RoPo:
a
100 200 300 400 500 600
MAGNETIC FLUX DENSITY
IN GAUSS
Dwg No. A·1 0.307 A
BASIC HEAD-ON MODE OF OPERATION
The magnetic flux density is indicated for the most
sensitive area of the device. This area is centrally
located and 0.016" ± 0.002" (0.4 mm ± 0.05 mm)
below the top surface of the package.
Dwg No. A-11 ,008A
For reference purposes, both an Alnico VlII magnet, 0.212" (5.38mm) in diameter and 0.187" (4.75
mm) long and a samarium cobalt magnet, 0.100"
(2.54 mm) square and 0.040" (1.02 mm) thick, are approximately 1200 gauss at their surfaces. The flux
density decays at a high rate as the distance from a
pole increases.
LOCATION OF SENSOR CENTER
!i
i
I
0.002
0.05
I
I
I
As an example, using the Alnico VlII magnet in
good alignment and with the pole surface in contact
with the branded surface of the package, the flux
density at the active Hall sensing area of the device
would be approximately 1150 gauss (0.016" below
the package surface).
SENSOR
CENTER
:
0.0045
~ ______________ ~l~_
+---------~H-----------~-.--!i
The flux density would drop to approximately
1000 gauss with an air-gap between the package and
the magnet 0[0.031" (0.79 mm).
IN
MM
Vee
OUT
OUT
GND
Dwg. No. A·11 ,009 B
2-37
UGN-3220K
DUAL OUTPUT UNIPOLAR HALL EFFECT SWITCHES
UGN-3220K
LOW-COST DUAL OUTPUT HALL EFFECT SWITCH
FEATURES
• Operable with a Small Permanent Magnet
• High Reliability-Eliminates Contact Wear, Contact
Bounce
• No Moving Parts
• Small Size
• Outputs Compatible with All Logic Families
• Operation to 100 kHz.
• Dual Output Transistors Can Drive Independent Loads
FUNCTIONAL BLOCK DIAGRAM
UGN-3220K integrated circuits are low-cost magnetically activated electronic switches that utilize
the Hall Effect for sensing a magnetic field. Each
circuit consists of a voltage regulator, Hall sensor,
signal amplifier, Schmitt trigger, and current-sinking
output stage, integrated onto a single monolithic silicon chip.
Dwg No A·11.007
This device is supplied in a 4-pin single in-line
molded package.
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 17 V
Magnetic Flux Density, B ........................................ Unlimited
Output OFF Voltage, VOUHOFFi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 17 V
Output ON Current, ISiNK .......................... , ................ 30 mA
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts ............................ - 65°C to + 125°C
ELECTRICAL CHARAOERISTICS at TA
= + 25°C, Vee = 4.5 V to 16 V (unless otherwise noted)
Limits
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Operate Point
Bop
-
220
350
Gauss
Release Point
BRP
50
160
-
Gauss
Hysteresis
BH
20
60
-
Gauss
B 2: 350 Gauss, ISINK
-
110
400
mV
-
0.1
20
-
3.5
9.0
fLA
mA
4.5
-
16
V
Output Saturation Voltage
VeEISATI
Output Leakage Current
10FF
B:5 50 Gauss, Vee
Supply Current
lee
B:5 50 Gauss, Vee
Operating Voltage Range
Vee
= 15 mA
= 16 V
= 5V
2-38
UGN-3220K
DUAL OUTPUT UNIPOLAR HALL EFFECT SWITCHES
OPERATION
TRANSFER CHARACTERISTICS
The output transistors are normally OFF when the
magnetic field perpendicular to the surface of the
chip is below the threshold or operate point. As magnetic flux density surpasses the operate point, the
output transistors switch ON and are each capable
of sinking 15 rnA of current. Selections with 30 rnA
constant current ratings are available.
The output transistors switch OFF as the magnetic flux density falls below the release point (which
is less than the operate point). This is illustrated
graphically in the transfer characteristic curve. The
hysteresis characteristic provides for unambiguous
and non-oscillatory switching.
I
10. P.
I
!l
I
I
I
Vl
I
!::3
o
>
I
ION
I
I
I
I
I
~
I
I
OFF
I
t!
I
R.P.:
_
0~0---7.100=-~~200~~3~OO;:==4~OO;:~5;'OO~'--~~~
The simplest form of magnet that will operate the
Hall Effect digital switch is a bar magnet as shown.
Other methods are possible. In the illustration, the
magnet's axis is on the center line of the packaged
device and the magnet is moved toward and away
from the device. Also note the orientation of the
magnet's south pole in relation to the branded surface·ofthe package.
The magnetic flux density is indicated for the most
sensitive area of the device. This area is centrally
located and 0.016" ±0.002" (0.4mm ±0.05mm)
below the branded surface of the package.
MAGNETIC FLUX DENSITY IN GAUSS
Dwg.No A-11.006A
BASIC HEAD-ON MODE OF OPERATION
For reference purposes, both an Alnico VIII magnet, 0.212" (5.38mm) in diameter and 0.187" (4.75
mm) long, and a samarium cobalt magnet, 0.100"
(2.54 mm) square and 0.040" (1.02 mm) thick, are approximately 1200 gauss at their surfaces. The flux
density decays at a high rate as the distance from a
pole increases.
LOCATION OF SENSOR CENTER
',~';,<,,'. ' ,
,
,
;
.~',
'
SECTION 3-HALL EFFECT LATCHES
Selection Guide .................................................................... 3-2
UGN-3035U Magnetically Biased Bipolar latch .............................................. 3-3
UGN-3075T/U and UGS-3075T/U Bipolar latches ............................................. 3-7
UGN-3076T/U and UGS-3076T/U Bipolar latches ............................................ 3-10
UGN-3077T/U and UGS-3077T/U Bipolar latches ............................................ 3-13
UGN-3275K and UGS-327SK Dual Complementary Output Bipolar latches ........................... 3-16
UGN-3276K and UGS-3276K Dual Complementary Output Bipolar latches ........................... 3-16
UGN-3277K and UGS-3277K Dual Complementary Output Bipolar latches ........................... 3-16
See Also:
UGN-3030T/U and UGS-3030T/U Bipolar Hall Effect Switches ................................. 2-12
UGN-3131T1U and UGS-3131T1U Bipolar Hall Effect Switches ................................. 2-24
UGN-3235K Dual Output Switch ....................................................... 6-7
UGN-5275K through UGN-5277K Dual Complementary Output PowerHaWM latches .................... 6-9
Hall Effect IC Applications .......................................................... 7-2
3-1
II
HALL EFFECT LATCHES
SINGLE AND DUAL OUTPUT BIPOLAR LATCHES
The Sensor Division of Sprague Electric Company manufactures a
unique family of Hall Effect sensors-magnetically activated latches.
These devices have open-collector outputs that turn ON when the Hall cell
is exposed to a south magnetic pole perpendicular to the face of the package. The output remains ON when the magnetic south pole is removed and
doesn't release (turn OFF) until a north magnetic pole is presented to the
face of the sensor.
Both single and dual output devices are available. Sensors with dual
complementary outputs have electrical and magnetic characteristics almost identical to those of single output types. One of two output transistors
saturates (turns ON) when the Hall cell is exposed to a south magnetic
pole. The other half of the pair is OFF under these conditions. The pair
remains ON/OFF until the sensor is presented with a north magnetic pole:
The complementary pair then switches to an OFF/ON configuration.
In addition to Hall Effect latches shown in this section, Sprague designs
and fabricates customer-specified sensors with this operating format. For
more information, contact our Customer Service Center in Concord, New
Hampshire.
SELECTION GUIDE
(In Order of Operate Threshold)
Max.
Operate
Min.
Release
Min.
Hysteresis
50G
-50G
20G
150G
150G
-150G
-150G
250G
250G
-250G
-250G
Max.
Output
louT
Device Type
Open-Collector
25 rnA
UGN-3035U
3-3
100G
100G
Open-Collector
Dual Open-Collector
50 rnA
50 rnA
UGN/S-3077T/U
UGN/S-3277T/U
3-13
3-16
100G
100G
Open-Collector
Dual Open-Collector
50 rnA
50 rnA
UGN/S-3075T/U
UGN/S-3275T/U
3-7
3-16
-350G
100G
Open-Collector
50 rnA
350G
-350G
350G
100G
Dual Open-Collector
50 rnA
NOTE: Magnetic characteristics are guaranteed minimum/maximum values at + 25°C.
Output current ratings are absolute maximum values.
UGN/S-3076T/U
UGN/S-3276T/U
3-10
3-16
3-2
Page
UGN-3035U
MAGNETICALLY BIASED HALL EFFECT LATCH
UGN-3035U HALL EFFECT ASSEMBLY
-Magnetically Biased Bipolar Digital Latch
FEATURES
•
•
•
•
•
•
Extreme Sensitivity
For Use with Multipole Ring Magnets
High Reliability-No Moving Parts
Small Size
Output Compatible with All Digital Logic Families
Symmetrical Output
DEVELOPED for use with multi pole ring magnets in applications requiring extreme sensitivity to magnetic field reversal, the Type UGN-3035U
Hall Effect latch assembly provides rugged, reliable
interface between electromechanical equipment and
bipolar or MOS logic circuits at switching frequencies of up to 100 kHz.
Dwg. No. A-ll ,002A
EI
FUNCTIONAL BLOCK DIAGRAM
The bipolar output of the magnetically biased device saturates when the Hall cell is exposed to a
magnetic flux density greater than the ON threshold
(25 G typical, 50 G maximum). The output transistor
remains in the ON state until magnetic field reversal
exposes the Hall cell to a magnetic flux density
below the OFF threshold (- 25 G typical, - 50 G
minimum). Because the operating state switches
only with magnetic field reversal, and not merely
with a change in its strength, the integrated circuit
qualifies as a true Hall Effect latch.
gle silicon chip. The on-board regulator permits operation over a wide range of supply voltages. The
components of the monolithic circuit are carefully
matched to provide accurate operation with wide
variations in temperature.
The Type UGN-3035U assembly is a single-output Hall Effect digital latch in a three-pin plastic
"U" package with a bias magnet (0.065" or 1.65 mm
long) epoxy-glued to its rear surface.
Note that the opel'lltiollal symmetry of this sellsitil'e del'ice will be lost ({the latch is exposed to magIleticjlllx dellsity greater thall500 Gallss. Symmetry
call also be affected by fe/Toils materials Ileal' the
assembly.
Each circuit consists of a voltage regulator, Hall
voltage generator, signal amplifier, Schmitt trigger
circuit, and an open-collector output driver on a sin-
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vce . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 500 G
Output OFF Voltage .............................................. 25 V
Output ON Current, IslN , • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 25 rnA
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
Storage Temperature Range, Ts ............................ - 65°C to + 150°C
'Selected devices are available With a maximum T. rating of + 150°C.
3-3
UGN-3035U
MAGNETICALLY BIASED HALL EFFECT LATCH
ElECTRICAL CHARACTERISTICS at TA = + 25°(, Vee = 4.5 Vto 24 V (unless otherwise noted)
limits
Characteristic
Symbol
Min.
Typ.
Max.
Units
Operate Point*
Bop
-
+25
+50
Gauss
Release Point*
BRP
-50
-25
-
Gauss
50
-
Gauss
Output Saturation Voltage
BH
VSAT
20
B ~ + 50 Gauss, ISINK
Output Leakage Current
10Ff
BS
Supply Current
Icc
Hysteresis*
Output Rise Time
t,
Output Fall Time
tf
Test Conditions
-
50 Gauss, Vom
= 15 rnA
= 24 V
= 4.5 V, Output open
B s 50 Gauss, Vec = 24 V, Output open
Vee = 12 V, Rl = 8200, Cl = 20 pF
Vee = 12 V, Rl = 8200, Cl = 20 pF
B s 50 Gauss, Vee
-
85
400
mV
-
0.05
10
2.3
5.0
fJ..A
rnA
-
3.0
5.0
rnA
-
150
-
ns
-
400
-
ns
'Magnetic flux density is measured at most sensitive area of device located 0.016" ± 0.002" (0.41 mm ± 0.05 mm) below the branded face of the package.
SENSOR-CENTER LOCATION
TEST CIRCUIT
0.086
2.18
12 V
0.003
0.08
l
3035
820"
0.089
Owg. No. A-12.424
T~~" '"
-f+----*""'.
J==1~==~~T
'Includes probe and test fixture
capacitance.
PACKAGE QUlli NE
0.178 HIGH X 0.178 WIDE
INCH
MM
4.52 X 4.52
Dwg, No. A-12.399
3-4
UGN-3035U
MAGNETICALLY BIASED HALL EFFECT LATCH
OPERATION
Under power-up conditions, and in the absence of
an externally applied magnetic field, the output transistor of most UGN-3035U assemblies is ON and
capable of sinking 25 rnA of current. This is, however, a formally ambiguous state and should be
treated as such.
In normal operation, the output transistor turns
ON as the strength of the magnetic field perpendicular to the surface of the chip reaches the Operate
Point. The output transistor switches OFF as magnetic field reversal takes magnetic flux density to the
Release Point.
Note that the device latches: That is, a south pole
of sufficient strength, presented to the branded face
of the assembly, turns the device ON. Removal of
the south pole leaves the device ON. The presence
of a north magnetic pole of sufficient strength is required to turn the switch OFF.
2 1
D~Q
No
A-12.1ISA
Figure 1
With the branded surface of the assembly facing
you, and with pins pointing down, "U" package pinouts are: I-Vee, 2-Ground, 3-VOUT.
The magnetic flux densities indicated in the operating-points graph below are measured at the active
area of the device, which is 0.016 in. (0.41 mm)
below the branded surface ofthe "U" package.
The UGN-3035U digital latch is primarily intended for operation with a multi pole ring magnet,
as shown in Figure I. Other methods of operation
are possible.
TYPICAL TRANSFER CHARACTERISTICSATTA
= +25°C
Vee
t-15V
- - z - - - - - - - r - - - - - - I - - - - - - - r - - - - - - - - -,
r 10V
MIN.
RELEASE
POINT
TYPICAL
OPERATE
POINT
TYPICAL
RELEASE
POINT
MAX.
OPERATE
POINT
5V
L
-50
-40
-30
(NORTH POLE)
-20
-10
0
+20
+30
+40
(SOUTH POLE)
MAGNETIC FLUX DENSITY IN GAUSS
3-5
+10
+50
Dwg. No. A-12.274
II
UGN-3035U
MAGNETICALLY BIASED HALL EFFECT LATCH
GUIDE TO INSTALLATION
1. All Hall Effect integrated circuits are susceptible to mechanical stress effects. Caution should be exercised to minimize the application of stress to the leads or the epoxy package.
Use of epoxy glue is recommended. Other types may deform
the epoxy package.
280
260
w
240
~~
~
~
2. To prevent permanent damage to the Hall cell, heat-sink
the leads during hand-soldering. Recommended maximum conditions for wave soldering are shown in the graph at right. Solder flow should be no closer than 0.125" (3.18 mm) to the epoxy
package.
'u'
:r
~
~
22 0
~
200
f
10
15
TIME IN SOLDER BATH IN SECONDS
Dwg. No. A·12,062A
PACKAGE/MAGNET ASSEMBLY
DIMENSIONS IN MILLIMETRES
Based on 1" = 25.4 mm
DIMENSIONS IN INCHES
1~2~6+
T
3.94
~
201
~_ _
0.500 MIN.
_
l
I
1270 MIN
-0.016
I
~j
---o{}o-- 0.014
-
I
-0.41
--f-1.27
-2.54~
NOTES:
1. Tolerances on package height and width represent allowable mold offsets. Dimensions given are
measured at the widest point (parting line).
2. Tolerances, unless otherwise specified, are ± 0.005" (0.13 mm) and ± V2°.
3-6
UGN-307ST/U AND UGS-307ST/U
HALL EFFECT BIPOLAR DIGITAL LATCHES
UGN-3075T/u AND UGS-3075T/U
BIPOLAR HALL EFFECT DIGITAL LATCHES
FEATURES
•
•
•
•
•
•
Operable with Inexpensive Multipole Ring Magnets
High Reliability - No Moving Parts
Small Size
Output Compatible with All Digital Logic Families
Symmetrical Output
High Hysteresis Level Mini mizes Stray-Field Problems
MAGNETICALLY-ACTIVATED,
T HESE
solid-state latches are designed for use with inexpensive multipole ring magnets and brushless doc
motors. They provide effective, reliable interface
between electromechanical equipment and bipolar or
MaS logic circuits at switching frequencies of up to
100 kHz.
The bipolar output of these devices saturates when
the Hall cell is exposed to a magnetic flux density
greater than the ON threshold (100 G typical, 250 G
maximum). The output transistor remains in the ON
state until magnetic field reversal exposes the Hall
cell to a magnetic flux density below the OFF
threshold (-100 G typical, -250 G minimum).
Because the operating state switches only with
magnetic field reversal, and not merely with a
change in its strength, these integrated circuits qualify as true Hall Effect latches.
owg. No. A-ll,002A
FUNCTIONAL BLOCK DIAGRAM
Type UGN-3075T /U is rated for operation over
the temperature range of -20°C to +85°C. For applications in more severe environments, Type
UGS-3075T /U has an operating temperature range
of -55°C to + 125°C. Both types work with supply
voltages of 4.5 to 24 V.
Both Hall Effect latches are supplied in either the
80-mil (2.03 mm) three-pin plastic "T" package or
the magnetically optimized 60.5-mil (1.54 mm)
three-pin plastic "U" package.
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vee ................................................ 25 V
Magnetic Flux Density, B ....................................... Unlimited
Output OFF Voltage .............................................. 25 V
Output ON Current, ISINK .......................................... 50 mA'
Operating Temperature Range, TA
UGS-3075T/U* ..................................... -WC to + lWC
UGN-3075T/U ....................................... -20OC to +SSOC
Storage Temperature Range, Ts .......... ' ................ -65°C to + 150°C
'Selected devices are available with a maximum TA rating of
+ 150"C.
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA) packages
for surface-mount applications. The regular SOT-89 package is specified
by substituting an "LT" for the last character of the part number. The
long leaded SOT 89 package is specified by substituting an "LL" for the
last character of the part number and the Low profile "U" package is
available by substituting "UA" for the last character of the part number
(E.G., UGN3XXXLT, UGN3XXXLL, UGN3XXXUA).
3-7
E1
UGN-307ST/U AND UGS-307ST/U
HALL EFFECT BIPOLAR DIGITAL LATCHES
ELECTRICAL CHARACTERISTICS at TA = +25°C. Vee = 4.5 Vto 24 V(unless otherwise noted)
Characteristic
Operate Point"
Release Point*
Hysteresis •
Output Saturation Voltage
Output Leakage Current
Supply CUrrent
Output Rise Time
Output Fall Time
Symbol
Test Conditions
Bop
BRP
BH
VSA!
10FF
Icc
tf
tf
B '" 250 Gauss, ISINK = 20 mA
B :s; -250 Gauss, YOU! = 24 V
B :s; -250 Gauss, Vee = 24 V, Output Open
Vee - 12 V, RL - 820n, CL - 20 pF
Vee = 12 V, RL = 820n, CL = 20 pF
Min.
Typ.
Max.
50
-250
100
-
100
-100
200
85
0.2
3.0
100
200
250
-50
400
1.0
7.0
-
-
Units
Gauss
Gauss
Gauss
mV
/LA
mA
ns
ns
*Magnetic flux dens tty is measured at most sensitive area of device located 0.032" ±0.002" (0.81 mm ±0.05 mm) below the branded face of the T
package and 0.012" ±0.002" (0.31 mm ±0.05 mm) below the branded face of the 'U' package.
SENSOR-CENTER LOCATION
GUIDE TO INSTALLATION
1. All Hall Effect integrated circuits are susceptible to mechanical
stress effects. Caution should be
exercised to minimize the application of stress to the leads or the
epoxy package.
2. To prevent permanent damage to the Hall cell, heat sink the
leads during hand soldering. For
wave soldering, the part should not
experience more than 260°C for
more than five seconds. Solder flow
should be no closer than 0.125"
(3.18 mm) to the epoxy package.
f
NOTE:
PACKAGE OUTU NE
0.178 X 0.178
4.52 X 4.52
Dwg.No. A-ll.a96A
3-8
UGN-307ST/U AND UGS-307ST/U
HALL EFFECT BIPOLAR DIGITAL LATCHES
OPERATION
TYPICAL TRANSFER CHARACTERISTICS
The output transistor is normally OFF when the
strength of the magnetic field perpendicular to the
surface of the chip is below threshold or the Operate
Point. When the field strength exceeds the Operate
Point, the output transistor switches ON and is capable of current sinking SO rnA of current.
The output transistor switches OFF when magnetic field reversal results in a magnetic flux density
below the OFF threshold. This is illustrated in the
transfer characteristics graph.
20
Vl
:;
0
>
15
I VCC 12V I
~
....
c.o
~
0
10
,I
>-
::::l
0..
>-
is
I
I
>
The simplest form of magnet that will operate
Types UGN-307ST /U and UGS-307ST /U is a ring
magnet, as shown in Figure 1. Other methods of
operation are possible.
OPERATE
'POINT
OFFt
I
:
5.0
o
I
RELEASE!
POINT i
-250
-125
North Pole
I
I
, ON
125
South Pole
250
MAGNETIC FLUX DENSITY IN GAUSS
Dwg.No. A-ll.739
PEAK FLUX DENSITY AS A FUNCTION
OF TOTAL EFFECTIVE AIR GAP
Plastic 20-Pole Pair Ring (Radial Poles)
I" (25.4 mm) in diameter
and 0.2" (5.1 mm) long
with 0.01" (0.25 mm) clearance
400r"""....r " " " - - r - - - - , - - - - ,
Figure 1
Note that the device latches; that is, a south pole of
sufficient strength will tum the device ON. Removal
of the south pole will leave the device ON. The
presence of a north pole of sufficient strength is
required to tum the device OFF.
~
3001---t-+-----1----;
~
~
>>-
Vl
~ 2001----++-----1----;
ACTIVE AREA DEPTH (MD)
x
2
The magnetic flux density is indicated in the operatingpoints graph for the active area of the device, which is
located 0.032 " (0.81 mm) below the branded surface of
the "T" package and 0.016" (0.4 mm) below the branded
surface of the "U" package. Note that, as shown in the
plot of magnetic flux density as a function of total effective air gap, the "U" package offers a significant advantage in marginal flux density conditions for certain
magnetic configurations.
u
UGN-3075T. 167 G
10. 032" AAD)
~
z
c.o
~
loot----H~--t_--__f
0.05
0.10
0.15
TOTAL EFFECTIVE AIR GAP IN INCHES
(ACT! VE AREA DEPTH PLU S CLEARANCE)
Owg.No. A-ll.738
3-9
II
UGN-3076T/U AND UGS-3076T/U
HALL EFFECT BIPOLAR DIGITAL LATCHES
UGN-3076T/U AND UGS-3076T/U
BIPOLAR HALL EFFECT DIGITAL LATCHES
FEATURES
•
•
•
•
•
•
Operable with Inexpensive Multipole Ring Magnets
High Reliability - No Moving Parts
Small Size
Output Compatible with All Digital Logic Families
Symmetrical Output
High Hysteresis Level Mini mizes Stray-Field Problems
SOLID-STATE, magnetically-activated
T HESE
latches, designed for use with brushless doc
motors and inexpensive mUltipole ring magnets, operate as effective, reliable interface between electromechanical equipment and bipolar or MOS logic
circuits at switching frequencies of up to 100 kHz.
The bipolar output of these devices saturates when
the Hall cell is exposed to a magnetic flux density
greater than the ON threshold (100 G typical, 350 G
maximum). The output transistor remains in the ON
state until magnetic field reversal exposes the Hall
cell to a magnetic flux density below the OFF
threshold (-100 G typical, -350 G minimum).
Because the operating state switches only with
magnetic field reversal, and not merely with a
change in its strength, these integrated circuits qualify as true Hall Effect latches.
Owg. No. A-1I.002A
FUNCTIONAL BLOCK DIAGRAM
Type VGN-3076T IV is rated for operation over
the temperature range of -20o e to +85°e. For applications in more severe environments, Type
VGS-3076T IU has an operating temperature range
of - 55°e to + 125°e. Both types work with supply
voltages of 4.5 to 24 V.
Both Hall Effect latches are supplied in either the
80-mil (2.03 mm) three-pin plastic "T" package or
the magnetically optimized 60.5-mil (1. 54 mm)
three-pin plastic "V" package.
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vee ................................................ 25 V
Magnetic Flux Density, B ....................................... Unlimited
Output OFF Voltage .............................................. 25 V
Output ON Current, ISINK ........................ : ................. 50 rnA
Operating Temperature Range, TA
UGS-3076T/U * ..................................... ':'55°C to + 125°C
UGN-3076T/U ....................................... -20·C to +85·C
Storage Temperature Range, Ts ........................... -65OC to + 150·C
·Selected devices are available with a maximum TA rating of
+ 150°C.
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA) packages
for surface-mount applications. The regular SOT-89 package is specified
by substituting an "LT" for the last character of the part number. The
long leaded SOT 89 package is specified by substituting an "LL" for the
last character of the part number and the Low profile "V" package is
available by substituting "VA" for the last character of the part number
(E.O., VON3XXXLT, VON3XXXLL, VON3XXXVA).
3-10
UGN-3076T/U AND UGS-3076T/U
HALL EFFECT BIPOLAR DIGITAL LATCHES
ELECTRICAL CHARACTERISTICS at TA = +25°C. Vee
Characteristic
Operate Point'
Release Point'
Hysteresis'
Output Saturation Voltage
Output Leakage Current
Isupply Current
luutput !lIse lime
Output Fall Time
Symbol
=
4.5 V to 24 V (unless otherwise noted)
Test Conditions
Bop
BRP
BH
VSAT
10ff
Icc
t,
tf
B '" 350 Gauss, ISINK = 20 rnA
B '" -350 Gauss, VOUT - 24 V
Vce = 24 V, Output Open, B '" -350 Gauss
Vce = 12 V, RL = 820.0, CL = 20 pF
Vce = 12 V, RL = 820.0, CL - 20 pF
Min.
50
-350
100
-
-
-
Typ.
100
-100
200
85
0.2
3.0
100
200
Max.
350
-50
400
1.0
7.0
-
Units
Gauss
Gauss
Gauss
mV
p.A
rnA
ns
ns
-Magnetic flux density is measured at most sensitive area of device located 0.032" ±0.002" (0.81 mm ±0.05 mm) below the branded face of the 'T'
package and 0.012" ±0.002" (0.31 mm ±0.05 mm) below the branded face of the 'U' package.
II
SENSOR-CENTER LOCATION
GUIDE TO INSTALLATION
1. All Hall Effect integrated circuits are susceptible to mechanical
stress effects. Caution should be
exercised to minimize the application of stress to the leads or the
epoxy package.
2. To prevent permanent· damage (0 the Hall cell, heat sink the
leads during hand soldering. For
wave soldering, the part should not
experience more than 260°C for
more than five seconds. Solder flow
should be no closer than 0.125"
(3.18 mm) to the epoxy package.
f
r
0.089
\·"I:_i_--f+-
NOTE:
PACKAGE OUTU NE
O. 178 X O. 178
4.52 X 4.52
Owg.No. A-ll.896A
3-11
UGN-3076T/U AND UGS-3076T/U
HALL EFFECT BIPOLAR DIGITAL LATCHES
OPERATION
TYPICAL TRANSFER CHARACTERISTICS
The output transistor is normally OFF when the
strength of the magnetic field perpendicular to the
surface of the chip is below threshold or the Operate
Point. When the field strength exceeds the Operate
Point, the output transistor switches ON and is capable of sinking 50 rnA of current.
20
V>
!::;
0
>
15
I VCc- I2V J
...==
;'"
The output transistor switches OFF when magnetic field reversal results in a magnetic flux density
below the OFF Threshold. This is illustrated in the
transfer characteristics graph.
0
I
>
....
::>
....
The simplest form of magnet that will operate
Types UGN-3076T IU and UGS-3076T IU is a ring
magnet, as shown in Figure 1. Other methods of
operation are possible.
I
I
I
I
0-
5
:OPERAT£
I POINT
OFF!
10
I
5.0
o
I
i
RELEASE I
-250
I
!ON
POINT
-125
125
North Pole
250
South Pole
MAGNET! C FLUX DENS ITY IN GAUSS
Ow9.No. 'A-ll,739
PEAK FLUX DENSITY AS A FUNCTION
OF TOTAL EFFECTIVE AIR GAP
Plastic 20-Pole Pair Ring (Radial Poles)
1" (25.4 mm) in diameter
and 0.2" (5.1 mm) long
with 0.01" (0.25 mm) clearance
()wg
No
,1..·11,899
Figure 1
~~~r---r---~-----'
~
;3
Note that the device latches; that is, a south pole of
sufficient strength will turn the device ON. Removal
of the south pole will leave the device ON. The
presence of a north pole of sufficient strength is
required to turn the device OFF.
3001---+-+----+------1
==
~
V>
~
x
ACTIVE AREA DEPTH (AAD)
~
u
The magnetic flux density is indicated in the operatingpoints graph for the active area of the device, which is
located 0.032 "(0.81 mm) below the branded surface of
the "T" package and 0.016" (0.4 mm) below the branded
surface of the "U" package. Note that, as shown in the
plot of magnetic flux density as a function of total effective air gap, the "u" package offeFs a significant advantage in marginal flux density conditions (or certain
magnetic configurations.
2001----++----+------1
UGN-3076T. 167G
(0.032" AAOl
~
'"
~ lOOr-------~~----r-----~
0.05
0.10
0.15
TOTAL EFFECT! VE AI R GAP IN INCHES
(ACTI VE AREA DEPTH PLU S CLEARANCE)
Dwg. No. A-ll.741
3-12
UGN-3077T/U AND UGS-3077T/U
HAll EFFECT lATCHES FOR BRUSH lESS DC MOTOR CONTROL
UGN-3077T/U AND UGS-3077T/U
HALL EFFECT LATCHES FOR BRUSHLESS DC MOTOR CONTROL
-Symmetrical Duty Cycle
FEATURES
•
•
•
•
•
•
•
Symmetrical Output
For Use with Multipole Ring Magnets
High Reliability-No moving Parts
Small Size
Output Compatible with All Digital Logic Families
4.5 Vto 24 VOperation
High Hysteresis Level Minimizes Stray-Field Problems
FUNCTIONAL BLOCK DIAGRAM
II
The Sprague Type 3077 latching Hall Effect sensor
is a bipolar integrated circuit designed for applications requiring a symmetrical duty cycle, such as
control of high-efficiency brushless dc motors. Typically, the latch is used to sense the matched flux
densities of alternating polarity created by small, inexpensive multipole ring magnets.
Dwg. No, A-l1,002A
The integrated circuit includes a Hall voltage generator, operational amplifier, Schmitt trigger, bipolar output transistor, and voltage regulator. The
regulator allows use of the Ie with supply voltages
ranging from 4.5 V to 24 V.
cally-optimized "U" package, and one 80 mils
(2.03 mm) thick specified by the suffix' 'T."
A high-temperature hermetic device supplied with
Sprague HYREL ® screening is available as UGS3077HH. For more information on surface-mount
and hermetic switches, contact the factory.
The output transistor saturates when the Hall element is exposed to a magnetic flux density equal to
or greater than its ON threshold. The NPN output
remains ON until magnetic flux density of equal
strength but opposite polarity crosses the sensor's
OFF threshold.
ABSOLUTE MAXIMUM RATINGS
Power Supply, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B ..................... Unlimited
Output OFF Voltage ........................... 25 V
Output ON Current, ISiNK • • • • • • • • • • • • • • • • • • • • • • • • 50 mA
Operating Temperature Range, TA
UGN-3077 . . . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
UGS-3077* ..................... - 40°C to + 125°C
Storage Temperature Range, Ts ......... - 65°C to + 150°C
Types UGN-3077T and UGN-3077U are rated for
operation over the temperature range of - 20 e to
+ 8ye. Types UGS-3077T and UGS-3077U have an
operating range of - 400 e to + 125°e.
0
The Hall Effect switches are offered in two threepin plastic packages-a 60-mil (I .54 mm) magneti-
'Selected devices are available with a maximum T, rating of + 150°C.
These Hall Effect sensors are also supplied in SOT 89 (TO-243AA)
packages for surface-mount applications. The regular SOT-89 package
is specified by substituting an "LT" for the last character of the part
number. The long leaded SOT 89 package is specified by substituting an
"LL" for the last character of the part number and the Low profile "u"
package is available for substituting "UA" for the last character of the
part number (e.g., UGN3XXXlI, UGN3XXX11, UGN3XXXllA).
3-13
UGN-3077T/U AND UGS-3077T/U
HALL EFFECT LATCHES FOR BRUSHLESS DC MOTOR CONTROL
ELECTRICAL CHARACTERISTICS at TA
= +25°C, Vee =4.5 V to 24 V (unless otherwise noted)
Min.
50
25
25
-150
-200
-200
100
100
100
Output Saturation Voltage, VCElsaQ
Test Conditions
T.= +25°C
-20°C < T. < +85°C
-40°C < T. < +125°C
T. = +25°C
-20°C < T. < +85°C
-40°C < T. < +125°C
T. = +25°C
-20°C < T. < +85°C
-40°C < T, < +125°C
B> 200 G, loul = 20 rnA, -40°C < T. < +125°C
-
Typ.
100
100
100
-100
-100
-100
200
200
200
85
Output Leakage Current, IOFF
B< -200 G, VOU1 = 24 V, -40°C < T, < +125°C
-
Supply Current,
B< -200 G, Vee = 24 V, Output Open.
-40°C < T. < +125°C
Vee = 12 V, RL = 820n, CL=20 pF.
-40°C < T. < +125°C
Vee = 12 V, RL = 820n. CL= 20 pF.
-40°C < T. < +125°C
Characteristic
Operate Point, Bop·
Release Point, B" •
Hysteresis, BH *
Icc
Output Rise Time, t,
Output Fall Time, t,
Limits
Max.
150
200
200
-50
.:..25
-25
400
Units
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
mV
0.2
1.0
p.A
-
3.0
7.0
rnA
-
100
-
ns
-
200
-
ns
-
-
"Magnetic flux density is measured at the most sensitive area of the device.
TRANSFER CHARACTERISTICS AT TA
=+25°C
TEST CIRCUIT
15V
--r--------,.-------~--------_r-------,
I
I
I
t
12V
I
I
I
3077
8200
1 2 3
Owg. No. 0-1011
I
I MIN.
I RELEASE
: POINT
10V
TYPICAL
RELEASE
POINT
I
TYPICAL
OPERATE
POINT
I
I
I
I
I
I
MAX. I
OPERATE :
POINT I
I
I
I
I
I
5V
,
~
·Includes probe and test fixture
capacitance.
-150
-100
(NORTH POLE)
o
+100
+150
(SOUTH POLE)
MAGNETIC FLUX DENSITY IN GAUSS
Owg. No. 0·1012
3-14
UGN-3077T/U AND UGS-3077T/U
HALL EFFECT LATCHES FOR BRUSHLESS DC MOTOR CONTROL
OPERATION
assembly, turns the device ON. Removal of the south pole
leaves the device ON. The presence of a north magnetic
pole of sufficient strength is required to turn the switch
OFF.
Under power-up conditions, and in the absence of an
externally applied magnetic field, the output transistor
of most Type 3077 latches is ON and capable of sinking
25 rnA of current. This is, however, a formally ambiguous state and should be treated as such.
The Type 3077 digital latch is primarily intended for
operation with a multipole ring magnet, as shown in
Figure I. Other methods of operation are possible.
In normal operation, the output transistor turns ON as
the strength of the magnetic field perpendicular to the
surface of the chip reaches the Operate Point. The output
transistor switches OFF as magnetic field reversal takes
magnetic flux density to the Release Point.
With the branded surface of the assembly facing you,
and with pins pointing down, "T" and "U" package
pinouts are: I-Vee, 2-Ground, 3-VOUT'
Note that the device latches: That is, a south pole of
sufficient strength, presented to the branded face of the
El
SENSOR-CENTER LOCATION
i
0.089
jU
~~j~CSQ=.;;~~=~~~~~;;~~,~~~~~::=====t~==Fn~
3
2 1
Dwg No. A-12,572
Figure 1
PACKAGE OUTU NE
0.178 HI GH X 0.178 WI DE
4.52 X 4.52
INCH
MM
Owg. No. Ar 12.399
GUIDE TO INSTALLATION
1. All Hall Effect integrated circuits are susceptible to
mechanical stress effects. Caution should be exercised to
minimize the application of stress to the leads or the
epoxy package. Use of epoxy glue is recommended.
Other types may deform the epoxy package.
2. To prevent permanent damage to the Hall cell, heatsink the leads during hand-soldering. Recommended
maximum conditions for wave soldering are shown in the
graph at right. Solder flow should be no closer than
0.125" (3.18 mm) to the epoxy package.
3-15
UGN-3275K THROUGH UGS-3277K
HALL EFFECT LATCHES WITH DUAL COMPLEMENTARY OUTPUT
UGN-3275K THROUGH UGS-3277K
HALL EFFECT LATCHES
With Dual Complementary Output
FEATURES
•
•
•
•
Operable with Multipole Ring Magnets
High Reliability
Small Size
Output Compatible with All Digital Logic Families
• 4.5 Vto 24 VOperation
• High Hysteresis Level Minimizes Stray-Field Problems
• Dual Complementary Output
FUNCTIONAL BLOCK DIAGRAM
Sprague Type 3275, 3276 and 3277 latching Hall Effect sensors are bipolar integrated circuits designed
for electronic commutation in brushless dc motors.
All three types feature dual complementary output.
The latches are typically used to sense matched
magnetic flux densities of alternating polarity from
multi pole ring magnets.
Dwg. No 14-409
Each sensor Ie includes a Hall voltage generator,
operational amplifier, Schmitt trigger, voltage regulator, and dual bipolar output transistors. The regulator allows use of the integrated circuit with supply
voltages of 4.5 V to 24 V.
switches to an OFF/ON configuration. This mode is
also latched.
Types UGN-3275K, UGN-3276K and UGN3277K are rated for operation over the temperature
range of -20 o e to +S5°e. UGS-3275K, UGS3276K and UGS-3277K have an operating range of
- 400 e to + 12SOC.
One of the pair of NPN open-collector output
stages saturates when the Hall element is exposed to
flux density equal to or greater than the operate
threshold. The other output transistor is OFF. This
ON/OFF operating mode continues until magnetic
flux of equal density but opposite polarity crosses
the sensor's release threshold. The output pair then
®
The dual output Hall Effect latches are supplied in
a four-pin plastic SIP, 0.200" (5.0S mm) wide, 0.130"
(3.3 mm) high, and 0.060" (1.54 mm) thick.
N
ABSOLUTE MAXIMUM RATINGS
3275
u
u
>
10
a
N
:::>
~
0
.:-:::>
0
Z
I-
0
0
19
:::>
Power Supply, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . .. 25 V
Magnetic Flux Density, B ..................... Unlimited
Output OFF Voltage .................... . . . . . .. 25 V
Output ON Current, ISINK •••••••••••••••••••••••• 50 rnA
Operating Temperature Range, TA
(UGN) . . . . . . . . . . . . . . . . . . . . . . . .. - 20 0 e to + 85°C
(UGS)* ........................ - 400 eto + l25°C
Storage Temperature Range, Ts ......... - 65°e to + 150°C
0:
*Selected devices are available with a maximum T, rating of + 150°C.
Dwg No A-14,407
3-16
UGN-3275K THROUGH UGS-3277K
HALL EFFECT LATCHES WITH DUAL COMPLEMENTARY OUTPUT
ELECTRICAL CHARACTERISTICS at TA
= + 25°C, Vee = 4.5 Vto 24 V (unless otherwise noted)
Characteristic
Symbol
Supply Voltage
Vee
Output Saturation Voltage
VeE!"tJ
Output Leakage Current
10ff
Supply Current
Icc
Output Rise Time
t,
Output Fall Time
t,
Switch Time Differential
at
Test Conditions
= 24 V, lSi" = 20 rnA
Vour = 24 V, Vee = 24 V
Vee = 24 V, Output Open
Vee = 14 V, R, = 82011, Cl = 20 pF
Vee = 14 V, R, = 82011, Cl = 20 pF
Vee = 14 V, R, = 82011, Cl = 20 pF
Vee
Min.
Typ.
Max.
4.5
-
24
V
-
-
400
mV
-
-
10
-
-
7.0
fLA
rnA
-
0.04
0.4
fLS
-
0.18
0.4
fLs
-
0.685
0.8
fLS
Units
MAGNETIC CHARACTERISTICS
TA
=
+25°C
TA
= - 20°C to + 85°C
TA
= - 40°C to + 125°C
Characteristic
Device
Type'
Min.
Max.
Min.
Max.
Min.
Max.
Units
Operate Point, Bop
3275
50
250
50
250
50
250
3276
50
350
50
350
50
350
3277
50
150
50
175
50
200
3275
- 250
-50
-250
-50
-250
-50
3276
-350
-50
-350
-50
- 350
-50
G
G
G
G
G
3277
-150
-50
-175
-50
-200
-50
Release Point, BRP
Hysteresi s, BH
All
100
-
100
-
100
G
G
-
'Complete part number includes a prefix denoting operating temperature range ("UGN-" or "UGS-") and a suffiX ("K") denoting package type.
14 V
TEST CIRCUIT
@
N
3275
VOUT 1
-y
RL 1
---J\,
VOUT 2
v
RL 2
C L1
* 'LIce
-'-
* test
Includ~s pro be and
fixture capacitance
Dwg No A-14,40a
3-17
E1
NOTES
NOTES
NOTES
GENERAL INFORMATION
HAJ,.L EFFECT SWITCHES
QI
',··········11
HALL EFFECT UNEARS
[O~~~~~NltS~~'
1-1_·S_· ·~_EC_IA.-l~. ;. ;.P_UR. . ;P_OS'-E_S_EN"'-i_OR. ;. ;.S_·
',.
II
·····IJ
iB
.". >.' . :'."
"'.,:
•••.. _
.••. '._._
.. _.,_;.....;..;...;..;.
•. _...••_
.• ·_.·......
I
I
I
I
I
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I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
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I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
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I
I
I
I
I
I
I
I
I
I
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I
I
I
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SECTION 4-HALL EFFECT LlNEARS
Selection Guide .................................................................... 4-2
UGN-3501K1L1 Differential Dual Output Hall Effect Sensors ...................................... 4-3
UGN-3501 TlU Single Output Hall Effect Sensors .............................................. 4-6
UGN-3503U and UGS 3503U Single Output Hall Effect Sensors .................................... 4-9
UGN-3604K and UGN-3605K Differential Output Hall Effect Sensors ............................... 4-12
See Also:
Hall Effect Ie Applications .......................................................... 7-2
II
4-1
HALL EFFECT LlNEARS
LINEAR OUTPUT HALL EFFECT SENSORS
The output of all Hall Effect sensors described in this section is proportional to the applied magnetic field, i.e., linear. The devices fall into two
broad categories-basic Hall elements and integrated circuits.
Basic Hall cells are silicon-based, no-frills, encapsulated devices with
very small differential output signals that vary with supply current, applied
magnetic field, and temperature. Their variability enables useful application in design, analysis and calibration of magnetic circuits. Under conditions of constant current and temperature, the sensors exhibit linear
response to an extremely broad range of magnetic flux densities (to 4 kG).
Hall Effect ICs with linear output add operational circuitry such as a
voltage regulator, linear amplifier, and NPN emitter-follower output to the
basic Hall cell. Output signals are about 10 times larger than those of basic
Hall cells. The integrated circuits, available with single or differential dual
output stages, accurately track minute changes in magnetic flux densities
of up to 1 kG over a wide range of operating conditions.
SELECTION GUIDE
(In Order of Device Sensitivity)
Sensitivity
Min.
Typ.
Output
Vee
Limits
Device
Page
0.75 mV/G*
0.7 mV/G
0.35 mV/G
l.3 mV/G*
1.4 mV/G
0.7 mV/G
0.04 mV/Gt
0.06 mV/G:j:
Em itter-Follower
Dual Differential
Emitter-Follower
Dual Differential
Dual Differential
4.5-6.0 V
8.0-16 V
8.0-12 V
3.0-7.0 V
3.0-7.0 V
UGN/S-3503U
UGN-350IKlLl
UGN-3501T/U
UGN-3604K
UGN-3605K
4-9
4-3
4-6
4-12
4-12
* AT Vee = 5 V. This device does not include a voltage regulator and exhibits ratiometric output.
t Function of supply voltage. With Vee = 5V, typical sensitivity is 0.04 mV/G.
+ Function of control current. With constant current source of 3 mA, typical sensitivity is 0.06 mViG. lee is limited to a
value that produces a 7 Vdrop across internal resistance of the Hall cell.
4-2
UGN-3S01 KAND UGN-3S01 LI
DIFFERENTIAL DUAL OUTPUT HALL EFFECT SENSORS
UGN-3S01 K AND UGN-3S01 LI
LINEAR DIFFERENTIAL OUTPUT HALL EFFECT SENSORS
FEATURES
•
•
•
•
Excellent Sensitivity
Flat Response to 25 kHz (Typ.)
Internal Voltage Regulation
Excellent Temperature Stability
FUNCTIONAL BLOCK DIAGRAMS
UGN-350IK and UGN-350ILI are Hall Effect integrated circuits that provide linear differential output
as a function of magnetic flux density at the sensor.
They are principally used to sense relatively small
changes in a magnetic field-changes too small to
operate a Hall Effect switch. Applications include
accurate measurement of electrical current with
negligible system loading and fine control of mechanical attributes such as position, weight, thickness and velocity.
Each device includes a Hall cell, linear differential
amplifier, differential emitter-follower output stage,
and voltage regulator on a monolithic silicon chip.
Both are rated for operation over a supply voltage
range of 8.0 V to 16 V and over a temperature range
ofO°C to +70°C. The pinout of UGN-350ILI includes provisions for output offset nulling with the
addition of an external resistor.
UGN-350IK is supplied in a four-lead single inline plastic package. UGN-350ILI is furnished in an
eight-lead SO-8 surface-mount plastic package that
conforms to JEDEC registration MS-102AA.
GND
Dwg. No. A-14.412
UGN-350lK
GND
Dwg. No. A·10,526A
UGN-350lLI
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. + 16 V
Output Current, louT .............................................. 4 rnA
Magnetic Flux Density, B ........................................ Unlimited
Operating Temperature Range, TA .............................. DOC to + 7DoC
Storage Temperature Range, Ts ............................ - 65°C to + 15DoC
4-3
UGN-3S01 K AND UGN-3S01 LI
DIFFERENTIAL DUAL OUTPUT HALL EFFECT SENSORS
ELECTRICAL CHARACTERISTICS at TA
= + 25°C, Vee = 12 V (unless otherwise noted)
Limits
Characteristic
Test Conditions
Operating Voltage
= 16 V
Min.
Typ.
8.0
-
16
V
-
10
18
rnA
-
100
400
mV
mV
Max.
Units
Supply Current
Vee
Output Offset Voltage
UGN-3501K, B = OG
-
100
400
Output Common-Mode Voltage
B = OG
-
3.6
-
V
Sensitivity
UGN-3501K, B = 1000 G
0.7
1.4
-
mV/G
0.7
1.4
-
mV/G
0.65
1.3
25
0.15
-
mV/G
-
kHz
-
mV
UGN-3501U, B = OG, RS- 6 -
7
UGN-350lLl, B = 1000 G, RS-
= on
6- 7
UGN-3501U, B = 1000 G, RS- 6
= 0 n (UGN-350lLl)
Frequency Response ( - 3 dB Down)
RS- 6 -
Broadband Output Noise
3 dB Bandwidth, 10 Hz to 10 kHz,
RS- 6 - 7 = 0 n (UGN-3501U)
7
= 0n
= 15 n
23
-
n
mV;oC
Offset Temperature Coefficient
RS- 6 - 7 = 0 (UGN-3501U)
1.0
NOTES:
1. All output voltage measurements are made with a voltmeter having an input impedance of 10 kll or greater and a common-mode rejection ratio greater than
60 dB.
2. Magnetic flux density is measured at the most sensitive area of the device. For the UGN-350lU, that is at top center, 0.015" ± 0.001" (0.38 mm ± 0.03 mm)
below the surface. For the UGN-3501K, it is 0.017" ± 0.001" (0.43 mm ± 0.03 mm) below the center of the branded surface.
NORMALIZED SENSITIVITY
AS A FUNCTION OF Vee
w
/
§i
~
0.95
to
o
§
:J
'"
:a
0:
oZ
v--- -
1.00
~'"
0.90
I
/
NORMALIZED SENSITIVITY
AS A FUNCTION OF TEMPERATURE
B ~ 1000 G
TA'" 25°C
RS·6-7 '"
CUGN-3501 LI)
on
Rl
= .2:tOkS2
0.900'"-------"I,2S,..--------.:S""O------::-!7S
0.85
6
8
10
12
14
16
TEMPERATURE (Oe)
Vee (VOLTS)
Dw. No A-10,530A
Dwg No A-10.529A
4-4
UGN-3501 K AND UGN-3501 LI
DIFFERENTIAL DUAL OUTPUT HALL EFFECT SENSORS
OUTPUT VOLTAGE
AS A FUNCTION OF MAGNETIC FLUX DENSITY
RELATIVE OUTPUT VOLTAGE
AS A FUNCTION OF LOAD RESISTANCE
I
,2V
V
8 CC.
= 1000 GAUSS
TA = 25°C
RS-6 ,,15.Q (UGN':3501 LI)
0
CD
o
"3K
1"""/
8r-~
®
4JK 1"- 1"I~1oo'
o 6 r- ~::~~~;t;~~ ~tPut
Impedclnce
load/
b,·
o. 4
V ..... ~~
o. 2 /
o
~
100
I
~
200
V
F
I
II
500
lK
2K
10K
5K
LOAD RESISTANCE (OHMS)
Dwg No.A-l0,533A
FLUX DENS1TY (GAUSS)
A·l0,528A
NOISE SPECTRAL DENSITY
AS A FUNCTION OF FREQUENCY
OU'I'PUT VOLTAGE
AS A FUNCTION OF AIR GAP
14
4
I ~~c: =2~~~
I
I
21\,.
R5_6" lSQ(UGN-3501L1)
Rl2:" 10kr.!
0
8
~
6
4
I
""
!~
r--..... ......
004
0.06
DaB
Q10
E
5RB522
0.212"0==)
.........
-f---
!-0.187"
~
;;
8
lJl
6
I;;
4
oz
r--. """-
012
~
12
',;;--10
~G
2
002
~
014
0.16
-
018
Vee
\
RS-6_7 '"
(UGN-3501 LI)
I
'\
......
'"1'-...
::>
2
o
020
on
1\
">-
o
I
= 12 VOLTS
TA • 25"C
10
100
AIR GAP (INCHES)
--
1000
FREQUENCY IN Hz
10000
Dwg. No. A-10.532A
Dwg. NO.A-l0,531A
GUIDE TO INSTALLATION
these leads from output leads if possible. In some
cases, it may be more practical to limit the frequency
response with an output RC network to prevent
oscillation:
I. All Hall Effect integrated circuits are susceptible to mechanical stress effects. Caution should be
exercised to minimize the application of stress to the
leads or the epoxy package.
2. To prevent permanent damage to the Hall cell
IC, heat sink the leads during hand soldering. For
wave soldering, the part should not experience more
than 230°C for more than 5 seconds and no closer
than 0.125" to the epoxy poackage.
3. If a zeroing potentiometer is used with UON3501LI, minimize lead lengths from it and isolate
1.8K
1000 pF
V OUT
8
Dwg. No. A-10,536
4-5
UGN-350lT AND UGN-350lU
SINGLE OUTPUT HALL EFFECT SENSORS
UGN-3501T AND UGN-3501U
LINEAR OUTPUT HALL EFFECT SENSORS
FEATURES
•
•
•
•
FUNCTIONAL BLOCK DIAGRAM
Excellent Sensitivity
Flat Response to 25 kHz (typ.)
Internal Voltage Regulation
Excellent Temperature Stability
Utilizing the Hall Effect for sensing a magnetic field,
UGN-3501T and UGN-350l U integrated circuits
provide a linear single-ended output that is a function of magnetic field intensity.
These devices can sense relatively small changes
in a magnetic field-changes that are too small to
operate a Hall effect switch. They can be capacitively coupled to an amplifier, to boost the output to
a higher level.
Packaging options include two three-pin SIPs: the
"T" package (UGN-350IT), which is 80 mils (2.03
mm) thick, and the magnetically optimized "U"
package, which is 60 mils (1.52 mm) thick.
UGN-350IT and UGN-350l U each include a Hall
cell, linear amplifier, emitter-follower output, and a
voltage regulator. Integrating the Hall cell and the
amplifier into one monolithic device minimizes
problems related to the handling of millivolt analog
signals
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee. . . . . . . . . . . . . . . . . . . . . . . . . . .. 16 V
Output Current, loUT ........................... 4 mA
Magnetic Flux Density, B ..................... Unlimited
Operating Temperature Range, TA • • • • • • • • • • • DoC to + 70°C
Storage Temperature Range, Ts ......... - 65°C to + 150°C
Both devices are rated for continuous operation
over the temperature range of ooe to + 70 0 e and
over a supply voltage range of 8 V to 12 V.
ELECTRICAL CHARACTERISTICS atTA =
+ 25°C, V« =
12 VDC
Limits
Characteristic
Symbol
Test Conditions
Operating Voltage
Vee
Supply Current
Vee = 12 V
Quiescent Output Voltage
Icc
VOUT
Sensitivity
f:J.V OUT
Frequency Response
BW
Broadband Output Noise
en
Min.
Typ.
Max.
Units
8.0
-
12
V
-
10
20
mA
B = 0 Gauss, Note I
2.5
3.6
5.0
V
B = 1000 Gauss, Notes 1, 2
0.35
OJ
-
mV/G
fH - f, at - 3 dB
-
25
-
kHz
f = 10 Hz to 10 kHz
-
0.1
-
mV
100
-
n
Output Resistance
Ro
NOTE 1. All output voltage measurements are made With a voltmeter having an Input Impedance of 10 kD or greater.
NOTE 2. Magnetic flux density is measured at the most sensitive area of the device, which is centered on the branded side of the T package, 0.037 ± 0.001" (0.94
± 0.03 mm) below the surface and 0.017" '± 0.001" (0.43 ± 0.03 mm) below the branded side of the U package.
4-6
UGN-3S01 T AND UGN-3S01 U
SINGLE OUTPUT HALL EFFECT SENSORS
NORMALIZED SENSITIVITY
AS A FUNCTION OF Vee
NORMALIZED SENSITIVITY
AS A FUNCTION OF TEMPERATURE
1.05
1.0
• 95
I
.90
.85
/
/
,
V
."
~
~
i--"""'"
~
f"'. .......
./
1.00
~ .......
.........
.......
r--.... .......
............
.......
0.9S
/
r--....
s = 1000 GAUSS
TA·25°C
Rl =
-
10, Ju,.
Vee = 12V
B = 1000 GAUSS Rl = 10 k~
11
10
VCC (VOlTS)
8
12
0.90
Dwg. No. A·10,522
I
o
25
I
75
Dwg. No. A-10,521
TEMPERATURE. DC
OUTPUT VOLTAGE
AS A FUNCTION OF MAGNETIC FLUX DENSITY
I
50
OUTPUT VOLTAGE
AS A FUNCTION OF AIR GAP
+5.6
./
+4,6
+3.6
V
+2.6
~
V
/
~
V
·3.9
Vee'"
TA
./
General
UGN350lT
=
f-\----+----+---_+_
12V
25°C
·3.B I--~-+----+----f-
Rl • 10 Ju,.
SR8522
~:P--L
.212"G]
T:/JB7,,1--
+1.6
.3.71-----P~--+---+---_t---_I
NOTE: NORTH POLE [S WITH
THE NORTH POLE FACING
THE BRANDED SIDE OF THE
PACKAGE.,
3000
2000
SOUTH POLE
1000
1000
,
2000
3000
NORTH POLE
.3.6
MAGNETIC FLUX DENSITY (GAUSS)
!------,J~----+.~--..:J;~~~~--~
o
.10
.20
.30
.4~
.50
AIR GAP D, (INCHES)
Dwg. No A·l0,5l9
Dwg No A-10,523
These Hall Effect sensors are also supplied in a low profile "U" package. The low profile "U" is specified by substituting a "UA" for the
last character of the part number.
4-7
UGN-3S0lT AND UGN-3S01U
SINGLE OUTPUT HALL EFFECT SENSORS
11111
12
Vee
~10
~
>
,
8
";; 6
r\..
w
Vl
~
12 V
i\
"NOISE SPECTRAL DENSITY
AS A FUNCTION OF FREQUENCY
'I TA ==25°C I
,~
4
I'-...
2
i'o
o
10
100
1000
10,000
FREQUENCY, Hz
Owg. No A·1Q,520A
TYPICAL APPLICATIONS
SENSITIVE PROXIMITY DETECTOR
FERROUS METAL SENSOR
fERROUS
~
rr(N AVo~lO mV
0=0,250'
NOTCH OR HOLE SENSOR
LOBE OR COG SENSOR
For reference only-an Alnico VIII permanent magnet, 0,212"
(5,38 mm) in diameter and 0.187" (4.75 mm) long is approximately 800 gauss at the surface. A samarium cobalt permanent
magnet, 0.100" (2.54 mm) square and 0.040" (1.02 mm) thick is
approximately 1200 gauss at its surface.
4-8 .
UGN-3503U AND UGS-3503U
SINGLE OUTPUT RATIOMETRIC HALL EFFECT SENSORS
UGN-3S03U AND UGS-3S03U
RATIOMETRIC, LINEAR HALL EFFECT SENSORS
FEATURES
•
•
•
•
•
Extremely Sensitive
Flat Response to 23 kHz
low-Noise Output
4.5 Vto 6 VOperation
Magnetically Optimized Package
Dwg. No. A-12.538
TYPE VON-3503V AND VOS-3503V Hall Effect
sensors accurately track extremely small
changes in magnetic flux density-changes generally too small to operate Hall Effect switches.
FUNCTIONAL BLOCK DIAGRAM
The sensors are supplied in a three-pin plastic
package only 61 mils (1.54 mm) thick. Type VGN3503 V is rated for continuous operation over the
temperature range of - 200 e to + 85°e. Type VOS3503 V operates over an extended temperature range
of -40 o e to"+ 125°e.
As motion detectors, gear tooth sensors, and
proximity detectors, they are magnetically driven
mirrors of mechanical events. As sensitive monitors
of electromagnets, they can effectively measure a
system's performance with negligible system loading while providing isolation from contaminated and
electrically noisy environments.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee ............................. 8 V
Magnetic Flux Density, B ..................... Unlimited
Operating Temperature Range, TA
UGN-3503U. . . . . . . . . . . . . . . . . . . .. - 20°C to + 85°C
UGS-3503U ..................... - 40°C to + 125°C
.Storage Temperature Range, Ts ......... - 65°C to + 150°C
Each Hall Effect integrated circuit includes a Hall
sensing element, linear amplifier, and emitterfollower output stage. Problems associated with
handling tiny analog signals are minimized by having
the Hall cell and amplifier on a single chip.
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Operating Voltage
Supply Current
Quiescent Output Voltage
Sensitivity
Bandwidth (- 3 dB)
Broadband Output Noise
Output Resistance
Symbol
Vee
lee
VOUT
~VOUT
= + 25°C, Vee = 5 V
Test Conditions
Typ.
-
9.0
2.50
1.30
23
90
50
B = OG
B = OG to ± 900G
2.25
0.75
BW = 10Hz to 10kHz
-
BW
V"'
RouT
Min.
4.5
-
-
Max.
6.0
14
2.75
1.72
-
Units
V
mA
V
mV/G
kHz
fLV
-
n
-
All output voltage measurements are made with a voltmeter having an input impedance of 10 kil.
Magnetic flux density is measured at the' most sensitive area of the device located 0.017" ± 0.001" (0.43 mm ± 0.03 mm) below the branded
face of the 'U' package.
These Hall Effect sensors are also supplied in a low profile "V" package. The low profile "V" is specified by substituting a "VA" for the
last character of the part number.
4-9
UGN-3503U AND UGS-3503U
SINGLE OUTPUT RATIOMETRIC HALL EFFECT SENSORS
OUTPUT NOISE
AS A FUNCTION OF FREQUENCY
OUTPUT VOLTAGE
AS A FUNCTION OF TEMPERATURE
4. 0
10
I
J
3. 5
B
Vee:;::; 5V
~
~
+SOOG
II
8. 0
Vee
~
~ 6. 0 1 \
3. 0
\
i!:
w
B::: OG
~
2. 5
4. 0
2. 0
B _
2. 0
40
20
I
r-- 1-1-
500G
0
5
+25
+85
+125
+SV
TA :;::; +25°(
N
>-
~::>
o
I i
I :
\! I
=
I
10
AMBIENT TEMPERATURE IN uC
I
IlK
100
FREQUENCY IN Hz
10K
DEVICE SENSITIVITY
AS A FUNCTION OF SUPPLY VOLTAGE
SUPPLY CURRENT
AS A FUNCTION OF SUPPLY VOLTAGE
2. 5
12
I B ~ OG
I
1
10
9.0
L,.-----"
8.0
TA
=
I
+25°C
----
2. 0
I
1. 5
~
1. 0
o. 5
7.0
4.5
5.0
TA
=
+25'C
I
---------I
0
4.5
6.0
5.5
I
I
6.0
5.5
5.0
SUPPLY VOLTAGE 1N VOLTS
SUPPLY VOLTAGE IN VOLTS
rh
U
>::>
">::>
"
o
900
1000
1100
WAVELENGTH IN NANOMETERS
Dwg No A·12,135A
O.OO"II:O-~31:::0-~1~O~O--:3~O~O-~1~K-~3~K~-~10K
PROPAGATION DELAY
AS A FUNCTION OF ILLUMINANCE
LIGHT LEVEL IN ~W/cm2
OUTPUT CURRENT
~"",.~""'
AS A FUNCTION OF SUPPLY VOLTAGE
10
10,o00~W/cJ,
V1
"
Z
0
U
3.0
w
V>
A= 880nrn
TA= +25°C
:::;
-'
-0:
:;:
E
;<:
;<:
~
fZ
W
-'
W
0:
0:
"
1.0
1,OOOI1 W /cm 2
0.3
::>
U
f-
~
f-
01
::>
o
0003~---+----4-----~---4----4-----~
0001~10:--~3::':0:---':':10~0:----=30=0:--~lK':---:3":-K--l0~K
100jJW/cm z
0.0 3
0.01
LIGHT LEVEL IN J1W/cm 2
o
5
10
15
SUPPLY VOLTAGE IN VOLTS
20
25
Dwg No A-12,137A
Dwg No.A-12,138A
5--7
EJ
ULN-3311D/T AND ULN-3312D/T
PRECISION LIGHT SENSORS
TYPICAL APPLICATIONS
Figure I shows a ULN-331ID/T or ULN-3312DIT integrated circuit
replacing a photocell or phototransistor for the precise linear detection of
a light level. Use of the precision light sensor eliminates the need for
external calibration because it is calibrated to an initial accuracy of better
than 7.2% during manufacture.
-~ PHOTOTRANSISTOR
~
OR PHOTOCEll
Vee
ULN-3311D/T
OR
ULN-3312D/T
Dwg No A-11,a08
Figure 1A
LIGHT-LEVEL DETECTOR
REQUIRING EXTERNAL CALIBRATION
Vref
Dwg. No. A-14. 270
Figure 1B
LIGHT-LEVEL DETECTOR USING PLS
In Figure 2. two precision light sensors are used in a differential configuration to detect the edge of an object. When the light level on the first
sensor is half of that on the second. the circuit switches. This circuit
operates over a wide range of ambient light levels. No external calibration
is required.
5-8
ULN-3311 OIT AND ULN-33120/T
PRECISION LIGHT SENSORS
Vee
130K
65K
400
150K
lOOK
10K
Dwg No.A-11.995
Figure 2
DIFFERENTIAL EDGE DETECTOR
SCHEMATIC
Vee
3
z
GROUND
I
GROUND
Dwg. No A·11,99B
5-9
ULN·3311011 AND ULN·33120/T
PRECISION LIGHT SENSORS
ULN-3311 D AND ULN-3312D
SENSOR-CENTER LOCATION
0.008" • 0.010"
r(O.20mm. 0.25mm)
_-r-~
PHOTO-SENSITIVE AREA
0041" DIA. <1.04mm)
0.009'" 0.010"
(O.23mm ± 0.25mm)
Dwg.No A-14.274
ULN-3311T AND ULN-3312T
RELATIVE RESPONSE
AS A FUNCTION OF THE ANGLE OF INCIDENCE
a
/'
0, 9
0, 8
,/
~.. ""
1/
0,
80
60
40
PHOTO·SENSITIVE AREA
0.041" DIA. (1.04 mm)
I I 'r-....
V
0, 7
100
SENSOR-CENTER LOCATION
20
I
1231
a
20
40
"
-T
"'
60
80
I
CENTER ON
PIN 2 WITHIN
± 0.010" (0.254 mm)
0.130" (3.30mm)
0110" (2.79mm)
100
INCIDENT ANGlE, (J IN DEGREES
Dwg No A-12,134
5-10
Dwg. No A-14,275
ULN-3330D THROUGH ULN-3363T
OPTOELECTRONIC SWITCHES
ULN-3330, ULN-3360, AND ULN-3363
OPTOELECTRONIC SWITCHES
FEATURES
FUNCTIONAL BLOCK DIAGRAM
• Photodiode with:
On-Chip Amplifier
On-Chip Comparator with Hysteresis
On-Chip Power Driver
On-Chip Voltage Regulator
• Sensitive Switch Points
• Operation to 30 kHz
• Plastic or Hermetic Package
Vee
5.4K
~--~----~-~-,
(33600nIY)1
I
I OUTPUT
SERIES ULN-3330, ULN-3360, and
SPRAGUE
ULN-3363 optoelectronic switches provide
GROUND
light detection and low-level signal processing in single three-lead packages. The monolithic integrated
circuits, requiring no external components, meet the
need for cost-effective light-sensing devices in consumer and industrial applications. Their high sensitivity makes them ideal for low-level light detection
in optically noise-free environments.
Dwg. No. A-13.264
Series ULN-3330 and Series ULN-3360 switches
turn ON as illumination of the photodiode falls below
55 flo W/cm O at 880 nm. An internal latch provides
hysteresis: The output turns OFF when illumination
surpasses the turn-on threshold by approXimatelylJ
12%.
(Continued next page)
Each optoelectronic Ie includes a 30-mil by 30mil photodiode, a high-gain current amplifier, a comparator with 12% hysteresis, output driver stage,
and voltage regulator.
Device Type
Output
Package*
Pinout (1-2-3)
ULN-3330D
ULN-3330T
Open Collector
Open Collector
D
T
OUT-GND-V"
OUT-GND-V"
ULN-3360D
ULN-3360T
5.4 kU Pull-Up
5.4 kU Pull-Up
D
T
OUT-GND-V"
OUT-GND-V"
ULN-3363D
ULN-3363T
Inv. Open Collector
Inv. Open Collector
D
T
. OUT-GND-V"
OUT-GND-V"
'Also available in chip form as ULN-3330C, ULN-3360C, or ULN-3363C.
5-11
ULN-3330D THROUGH ULN-3363T
OPTOELECTRONIC SWITCHES
options. Package options are specified by a suffix
added to the basic part number (e.g., ULN-3330D).
The hermetically sealed, three-pin metal "0" package with a glass end-cap conforms to JEOEC outline
TO-52 (TO-206AC). The miniature, clear plastic
three-lead "T" package is only 0.080" (2.03 mm)
thick.
Series ULN-3363 switches have inverted output
characteristics. They turn OFF as illumination falls
below 55 f.LW/cm2 at 880 nm; they remain OFF until
increasing illumination at the photodiode typically
reaches 62 f.LW/cm'.
Oevices in Series ULN-3330 and ULN-3363 have
buffered open-collector outputs for current-sink applications. Typical loads include incandescent
lamps, LEOs, sensitive relays, or dc motors.
Output circuitry for switches in Series ULN-3360
includes an internal 5.4 kO pull-up resistor that enables their direct use with microprocessors and TTL
logic.
Series ULN-3330, ULN-3360, and ULN-3363 ICs
are each offered in two packages with two pinout
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee ........................... , 15 V
Output Voltage, VOUI . . . . . . . . . . . . . . . . . . . . . . . . . .. 15 V
Output Current, loul .......................... 25 mA
Operating Temperature Range, TA • • • • • • •• - 40 cCto + 70 cC
Storage Temperature Range, Ts
Suffix 'D' ................... - 55cCto + 150cC
Suffix'T' ................... - 55cCto + 1l0cC
TYPICAL TRANSFER CHARACTERISTICS
SERIES ULN-3363
SERIES ULN-3330 AND ULN-3360
~
"o
>
1-----,,...--,
w'
-
o"
ILLUMINATION. E
ILLUMINATION, E
Dwg NO.A·l1.128
Dwg No A-13,265
ELECTRICAL CHARACTERISTICS at TA = + 25°C, Vee = 6.0 V, A = 880 nm
Characteristic
Supply Voltage Range
Supply Current
Light Threshold Level
Hysteresis
Output ON Voltage
Output OFF Current
Output Fall Time
Output Rise Time
Symbol
Test Conditions
Vee
lee
EON
Eo"
AE
VOUI
loul
tf
t,
Min.
4.0
-
Output ON
Output OFF
(E ofF - EoN)/E OFF
loul = 15 mA
lou I = 25 mA
VOUI = 15V
90% to 10%
10% to 90%
5-12
45
-
10
-
Limits
Typ.
6.0
4.0
55
62
13
300
500
-
-
-
200
200
-
Max.
15
8.0
Units
V
mA
65
f.LW/cm '
-
f.LW/cm '
16
'Yo
500
800
1.0
500
500
mV
mV
f.LA
ns
ns
ULN-3330D THROUGH ULN-3363T
OPTOELECTRONIC SWITCHES
RELATIVE SPECTRAL RESPONSE AT TA = +25DC
AS A FUNCTION OF WAVELENGTH OF LIGHT
z
1.2
w
C/)
z
.,
:
D-
C/)
w 0.8
...J
«0::
'i..oII""
/:
0.6
C/)
W
>
~
...J
0..
...
0.4
'i
~V
i
. .;1-~
o
300
400
500
zw
w
\
'"'"
PHOTOPIC
RESPONSE (HUMAN EYE I
•
~
c
w
\Gl
...J
w
>-
600
PEAK LEO
EMISSION
~
B
W
I
RESPONSE
(SILICON
PHOTOOIOOE I
I
0::
0.2
~O~
I
I
J
NUl
~.-
« Vi in
E 500
lOUT
= z~
lout
= 15mA
~
~
w
l!l
~
0
>
z
400
0
~
0::
::::J
~
300
C/)
200
-40
-20
o
+20
+40
-
~
+60
+70
OPERATING TEMPERATURE IN DC
Dwg. No. A-12.307
5-13
ULN-3330D THROUGH ULN-3363T
OPTOELECTRONIC SWITCHES
PROPAGATION DELAY
AS A FUNCTION OF LIGHT LEVEL
1oor---------~--~~------------~------------~
Vl
Cl
Z
A. = 880nm
ou
TA = +25°C
w
Vl
oc::
~
::!:
30~------------~~------~~--+_------------~
~
~
...J
W
Cl
~
10~------~__~~r-------------+_------~c_--~
~
19
a:
o
c::
0..
33~0~------------1~0~0------------~30~0~----------~1~0~00
HIGH LIGHT LEVEL IN iJ.W/cm 2
(LOW LIGHT LEVEL = 0)
Dwg. No. A-12,308
LIGHT-THRESHOLD CHANGE
AS A FUNCTION OF OPERATING TEMPERATURE
I-
Z
W
U
c::
W
0..
~
w
z
19
«
I
U
Q
...J
0
I
Vl
W
c::
I
l-
-50
I-
I
19
:::;
-100
-40
-20
o
+20
+40
OPERATING TEMPERATURE IN ·C
5-14
+60
+70
Dwg No A·12,309
ULN-3330D THROUGH ULN-3363T
OPTOELECTRONIC SWITCHES
TYPICAL APPLICATIONS*
., " '
--eu5J'~~ ~
~
~
~
OPTICAL WAVEGUIDE
Dwg. No. A-13,267
OPTICAL ISOLATOR
Dwg. No A-13,266
BAR CODE READER
PAPER
"7\~
REFLEaIVE;?
PLATEN
TRANSMISSIVE
~
;;1--'"
PAPER
~PlATEN
"
Dwg. No. A·13,26B
Dwg. No A-13.269
SHEET DETECTOR
EMITTER-DETECTOR
ASSEMBLY
ENCODING WHEEL
Dwg. No A-13,270
Dwg No. A-13,271
OPTICAL ENCODER
*Optics and ambient light shields omitted for clarity.
5-15
ULN-3330D THROUGH ULN-3363T
OPTOELECTRONIC SWITCHES
'0' PACKAGE
SENSOR-CENTER LOCATION
PHOTOSENSITIVE AREA
0.030" x 0.030"
lOUT
E 500
=~
/
~
w
(')
~
0
> 400
z
0
~
no
lOUT -
::J
15rnA
~ 300
(J)
~
I
200
-40
-
-20
o
+20
+40
+60
.70
OPERATING TEMPERATURE IN °C
Dwg. No. A-12,307
5-19
ULN-3332M AND ULN-3333M
MULTICHANNEL OPTOELECTRONIC SWITCHES
PROPAGATION DELAY
AS A FUNCTION OF LIGHT LEVEL
100r---------~--~--------------~------------~
~
A.
z
u
o
TA
w
= 880nm
= +25°C
(f)
o0::
U
30~------------~~------~~--+_------------~
~
~
~
...J
W
Cl
6
10~------~__~~r-------------+_------~~--_4
~
(!)
ifo
0::
Il.
33LO--------------1~0~0-------------30~0-------------1-0~00·
HIGH LIGHT LEVEL IN /1W/cm 2
(LOW LIGHT LEVEL = 0)
Dwg. No. A-12.30B
LIGHT-THRESHOLD CHANGE
AS A FUNCTION OF OPERATING TEMPERATURE
I--
Z
W
U
0::
~
~
W
(!)
z
«
I
U
Cl
...J
o
I
(f)
W
0::
I
I-I--
I
(!)
-40
-20
OPERATING TEMPERATURE IN ·C
5-20
__
+60
~
______
+40
~
______
+20
~
______
0
~
______
~
______
~
~
0
0
1
-
:::;
+70
Dwg. No. A-12.309
ULN-3332M AND ULN-3333M
MULTICHANNEL OPTOELECTRONIC SWITCHES
SENSOR CENTER LOCATIONS
ULN-3332M
0.141
3.58
IN
MM
Dwg. No. A-14,416
ULN-3333M
Dwg. No A·14,417
5-21
ULN-3390D AND ULN-3390T
OPTOELECTRONIC SWITCHES
ULN-3390D AND ULN-3390T
OPTOELECTRONIC SWITCHES-TWILIGHT SENSORS
FEATURES
• Photodiode with On-Chip
Amplifier
Comparator
Output Driver
Voltage Regulator
• 20 ILW/cm 2 and 10 ILW/cm 2 Trip Points
• 50% Hysteresis
• Temperature Compensation
• Operation to 30 kHz
• Plastic or Hermetic Package
The ULN-33900 is furnished in a hermetically
sealed metal package with a glass end cap. The "0"
package conforms to JEOEC outline TO-52 (TO206AC). ULN-3390T is supplied in a three-lead clear
plastic package 0.080" (2.03 mm) thick.
s 2r
e
temperature than cadmium
s fi c a sem . , require fewer components,
an a e librated switching characteristics.
The l: -33900 and ULN-3390T switches typically tur
as illumination falls below 10 ILW/cm 2
at 880nm. Internal hysteresis prevents deactivation
until illumination exceeds 20 ILW/cm2 • The switching
pOints can be factory-adjusted to customer
specifications.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, Vee ................ :....... 25 V
Output Voltage, VOUT •....•••...•••....•..•.. 25 V
Output Current louT. . . . . . . . . . . . . . . . . . . . . . .. 25 mA
Operating Temperature Range, TA ... - 40°C to + 85°C
Storage Temperature Range, Ts
(ULN-3390D) .............. - WC to + 125°C
(ULN-3390T) .............. - 55°C to + 110°C
5-22
ULN-3390D AND ULN-3390T
OPTOELECTRONIC SWITCHES
ELECTRICAL CHARACTERISTICS at TA =
Characteristic
Supply Voltage Range
Supply Current
Symbol
Vee
lee
Output Saturation
Voltage
Output Leakage Current
VeE (sat)
Output Rise Time
Output Fall Time
Light Threshold Level
tr
tf
EON
Test Conditions
-40°C < TA < + 85°C
-40°C < TA < + 85°C, Vee=5V,
EOFF
~E
Limits
Typ.
Max.
16
3.0
10
Unit
V
mA
-
300
400
mV
-
0.1
10
f.lA
-
500
500
14
ns
ns
6.0
200
200
10
-
20
-
45
50
55
Min.
4.0
-
E>20pW/cm 2
lOUT = 15 mA, E,,;;6f.lW/cm2,
-40°C < TA < + 85°C
VOUT =15V, E>20/LW/cm 2 ,
-40°C < TA < +85°C
10% to 90%
90% to 10%
Output On, Vee = 5V,
A = 880 nm
Output Off, Vee = 5V,
A = 880 nm
(EowEoN)/EoFF
louT
Hysteresis
+ 25°C (unless otherwise noted)
=
RELATIVE SPECTRAL RESPONSE AT T A
+ 25°C
AS A FUNCTION OF WAVELENGTH OF LIGHT
~
____
~
____
~
___ z ____
1.2
N
~ i~~
'i '" '"
~~
____
~
____
~
____
c·-
~ ~~
f'i
'i '" 'i
I
~
____
~
PEAK LED
EMISSION
~ 1.0t---t--~ir~I
/~'"~
~
0.8
:
II
...J
~
~
~
'v ~RADIIMETR~
R~~~:OEJ;~C """\----;-----1
Q,
z
(SILICON
PHOTODIODE)
j~" a·
0.6r---+---~~-+~---r---+---+~~~--~
/~
Ii
,~
w
\
~
~. .J~ 0'4r---~----~;~-+".r---r---~-----r--~'~~-----i
~
g;!
, PHOTOPIC
~ RESPONSE (HUMAN EYE)
0.2r---+--~/~jr--+-rfl~~-r---r---§«r---+--~~d
z
3:
~
\Gl
.i [jj ~ \'"
O~____._~;__;~I_~~_ffi~~~~__\~.~~____~_____~~____~_____
300
400
500
600
700
800
900
1000
1100
WAVELENGTH I N NANOMETERS
Dwg No A-12, 135A
5-23
f.l W1
cm 2
f.lW/
cm 2
%
ULN-3390D AND ULN-3390T
OPTOELECTRONIC SWITCHES
ULN-3390D
SENSOR-CENTER LOCATION
'0'
PHOTOSENSITIVE AREA
0030" x 0.030"
(0.76mm x 0.76 mm)
0009" , 0.010·'
(023mm ! O.25mm)
Dwg No. A-13.302
ULN-3390T
SENSOR-CENTER LOCATION
'T'
I
~
~-+--T1.....L
0.060" ± 0.005"
(1.52mm ± 0.13mm)
CENTERLINE ON
PIN 2 WITHIN
± 0.005" (0.13 mm)
PHOTOSENSITIVE AREA
0.030" x 0.030"
(0.76mm x 0.76mm)
2
3
Owg No. A-13,301 A
5-.24
ULN-339SD AND ULN-339ST
OPTOELECTRONIC SWITCHES
ULN-339SD AND ULN-339ST
OPTOELECTRONIC SWITCHES
FEATURES
• Light Sensing Switch
• Photodiode with On-Chip
Wide Bandwidth Amplifier
Comparator with Hysteresis
Voltage Regulator
• Propagation Delay < 5 fLsec
• Hysteresis Minimizes Switch Bounce
• 4.5 Vto 16 V Operation
• Digital Compatible Output
o Plastic or Hermetic Package
The Sprague Type ULN-3395 optoelectronic
switches provide light detection and high speed signal processing in a single three leaded package. This
monolithic integrated circuit requires no exter
components and provides a low cost solution r
tical encoder/isolator applications.
GROUND
PIN 2
\.L~,...-J\.---------~--O
Dwg. No. A-14,449
Each sensor IC includes a light sensing p ~tl
diode, dual trans impedance ampli e ,Schmitt t?l ger, a bandgap voltage re
a d a bipola
output stage capable of .
bandgap regulator allo s e 0
voltagesof4.5Vt
V. II
until the light falls below 280 fL W/cm'. In both cases,
the light source is assumed to be an AIGaAs LED.
The output stage includes an internal 10 kll pull-up
resistor that allows direct use with microprocessor
and TTL logic.
Type ULN-3395T and Type ULN-3395D are
rated in operation' over the temperature range of
-40°C to + 70°C. The ULN-3395T is supplied in a
miniature three leaded plastic SIP only 0.080" (2.03
mm) thick. The ULN-3395D is supplied in a hermetically sealed, three pin 'D' package with a glass endcap which conforms to JEDEC outline TO-52 (TO206AC) .
CAL TRANSFER CHARACTERISTICS
....
=>
:11-----.----.
w'
ABSOLUTE MAXIMUM RATINGS
0.4
!;i
-'
W
011
011
«0
,,..
-v
'-1
« ~
:;: in in
~
't ~ ~
'i 'i Cl
w 1.0
If)
z
f--
.~~
Q,Q,
NVl
"a "a
'i 'i
PEAK LED
EMISSION
0
Cl
V::O~
RESPONSE
(SILICON
PHOTODIODE)
Ii
1\
\
I
•!
PHOTOPIC
\ RESPONSE (HUMAN EYE)
~,
Q:
0.2
a
0
I
;'1-~
300
400
500
z
w
w
'"
Cl
~ \r;:
-'
-'
W
>-
\'"
\rio"
w
~
'"
"'"~
«
600
700
800
900
WAVELENGTH IN NANOMETERS
1000
1100
Dwg. No. A-12, 135A
5-26
rnA
ULN-339SD AND ULN-339ST
OPTOELECTRONIC SWITCHES
'D' PACKAGE
SENSOR-CENTER LOCATION
'D'
PHOTOSENSITIVE AREA
0.030" x 0.030"
(0.76mm x 0.76mm)
O.OOg" ! 0.010"
(O.23mm ! 0.25mm)
Dwg No A-13,302
DIMENSIONS IN INCHES
T
T
0.500
MIN.
~
~~
0.016
0.046
0.036
Dwg. No. A-38938 IN
NOTE: Lead diameter is controlled in the zone between 0.050" (0.13 mm) and 0.250" (6.35 mm) from the seating plane. Between 0.250" (6.35 mm)
and 0.500" (12.7 mm) from the seating plane, a maximum lead diameter of 0.021" (0.53 mm) is specified. Outside of these zones the lead
diameter is not controlled ..
5-27
ULN-339SD AND ULN-339ST
OPTOELECTRONIC SWITCHES
III PACKAGE
SENSOR-CENTER LOCATION
'T'
I
~
n---+--,.,~
0.060" ± 0.005"
(1.52mm ±0.13mm)
CENTERLINE ON
PIN 2 WITHIN
± 0.005" (0.13 mm)
PHOTOSENSITIVE AREA
0.030" X 0.030"
(0.76 mm X 0.76mm )
2
3
Dwg No A-13,301
DIMENSIONS IN INCHES
_I
0.183
0.500 MIN.
0.022
0.016
I II
:l
0.105
0.095
0.025 REF.
Dwg No.A-12.139IN
NOTE: Lead dimensions are controlled in the zone between 0.050" (0.13 mm) and 0.250" (6.35 mm) from the seating plane. Between 0.250" (6.35
mm) and 0.500" (12.7 mm) from the seating plane, a maximum lead diameter (diagonal dimension) of 0.021" (0.53 mm) is specified.
Outside of these zones the lead dimensions are not controlled.
5-28
NOTES
NOTES
GENERAL INFORMATION
[) I
SPECIAL· PURPOSE SENSORS
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SECTION 6-SPECIAL-PURPOSE SENSORS
Selection Guide .................................................................... 6-2
UGN-3056U and UGS-3056U Gear Tooth Sensor .............................................. 6-3
UGN-3235K Dual Output Switch ......................................................... 6-7
UGN-5275K through UGN-5277K Dual Complementary Output PowerHaWM Latches ..................... 6-9
I'
6-1
SPECIAL-PURPOSE SENSORS
APPLICATION-SPECIFIC SENSORS
The Sensor Division of Sprague has developed,
through an extensive research and development program, the most advanced Hall Effect sensors. The
design of these sensors offers the end-user the most
simplified means of installation and a cost-effective
approach to contactless switching and sensing. In
this section, you will find sensors that detect the
presence or absence of ferrous metal; ferrous metal
gear teeth, and notches in ferrous metal. PowerHall'M latches that have the capabilities of driving
inductive and resistive load of up to 300 mA are
available and PowerHaWM switches are planned. A
revolutionary dual output switch is available for
sensing of both the North and South poles of a ring
magnet. All of these sensors have incorporated the
latest in sensor design technology and the highest
standards of reliability.
The gear tooth sensor uses an amplified output
derived from Hall Effect IC magnetic sensors to trip
an onboard Schmitt trigger. The trigger points are
trimmed at the factory to provide consistent circuit
operating parameters.
Sensor performance is based on the target's magnetic properties, geometry and temperature. Target
design assistance is available at the factory.
Dual Output Hall Effect Switch
Brushless dc motor commutation is electronically
controlled by magnetic sensing Hall Effect switches
(see UGN-3075U, UGN-3275K). A major issue in
reliability and efficiency is crossover distortion
caused by a lack of delay between energizing of the
coils. The UGN-3235 senses both North and South
poles and provides two outputs, each of which may
be used to control the energizing of a motor winding.
This results in a guaranteed delay in the switching of
coils and windings.
Calibrated Linear Magnetic Sensors
Calibrated magnetic sensors are available from
the factory for use in precision designs. The UGN3503U is a low temperature calibrated linear supplied with a calibration sheet. Its primary use is in
low-cost prototyping situations where accurate
magnetic measurements are essential. The UGN3604K is a calibrated Hall element based on the
UGN-3605K family, which may also be used in prototyping applications.
This unique dual output sensor is temperature
compensated to operate over a wide range of temperatures and is available in a miniature 4-lead package. Contact the factory for more information or
applications support.
PowerHalrM Switches and Latches
Selected Hall Effect ICs are available with high
current sink capabilities. The UGN-5275K is a dual
output latch with 300 mA typical sink capabilities
designed for use in brushless motor applications. In
addition to this device, high power switches are also
being designed for all switch families. For more information contact the factory.
Gear Tooth Sensor
Our new gear tooth sensor product line capitalizes
on the superior characteristics of our high-quality
Hall Effect switches. In situations which require
sensing of a moving ferrous target down to 0 rpm at
temperatures ranging from -40°C to + 150°C, the
Sprague gear tooth sensor is the sensor of choice.
SELECTION GUIDE
Function
Digital Gear Tooth
Sensor
Dual Output Hall
Effect Switch
Dual Output
PowerHall'" latch
(In Order of Device Function)
Max.
Output
Device Type
ISINK
Open·Coliector
25 rnA UGN/S-3056U
Page
6·3
Dual Open-Collector
25 rnA
UGN-3235K
6-7
Dual Open-Collector
.5A
UGN-5275
UGN-5276
UGN-5277
6-9
6-2
UGN·3056U AND UGS·3056U
BIPOLAR DUAL HALL ELEMENT DIGITAL GEAR TOOTH SENSOR
UGN-3056U AND UGS-3056U
BIPOLAR DUAL HALL ELEMENT
DIGITAl. GEAR TOOTH SENSOR
FEATURES
• Senses Ferrous Targets down to arpm.
• Wide Operating Temperature Range
( - 40°C to + 150°C).
• Wide Range of Effective Air Gaps.
• 4.5 Vto 18 VSupply Voltage Range.
• Fast Operating Speed (lOa kHz).
• Output Compatible with all Digital Logic Families.
APPLICATIONS
• Rotational Position Sensor
Gear Tooth Sensor
Slot Sensor
Crankshaft Sensor
Tachometer Sensor
Counter
• linear Position Sensor
Fluid Level Sensor
Slot Sensor
Dwg. No. A-11,002A
magnetic circuit in which the sensor is one component. The magnetic circuit consists of the gear tooth
sensor IC, magnet, ferrous metal target and immediate surrounding environment. Careful attention to
magnet selection and target design results in larger
functional air gaps and lower magnet costs.
The gear tooth sensor switches on and off in response to flux density gradients of sufficient magnitude. (The appropriate switch points for your
application should be determined in consultation
with applications engineers at the factory. Circuit
switch points are also adjusted th.:re.) Large flux
density gradients are developed across ferrous metal
-air interfaces such as a gear tooth, gear slot
boundary. Proper target design and magnet selection maximizes these flux density gradients and
thereby optimizes the effect working air gap of the
overall gear tooth assembly.
points over temperature.
Each Hall Effect digital gear tooth sensor IC includes a voltage regulator, quadratic Hall voltage
generator, temperature stability circuit, signal amplifier, Schmitt trigger, and open collector output on
a single silicon chip. The on-board regulator permits
operation with supply voltages of 4.5 V to 18 V. The
switches' output can sink up to 20 rnA at a conservatively-rated repetition rate of 100 kHz. These devices can be used with bipolar or MOS logic circuits.
Optimum gear tooth sensor performance is dependent on careful design and implementation of the
The gear tooth sensor IC is offered in a three-pin
plastic package-the 60 mil (1.54 mm) thin, 178 mil
square magnetically optimized "U" package (see
Section 8 for the package dimensions).
6-3
m
•
UGN-30S6U AND UGS-30S6U
BIPOLAR DUAL HALL ELEMENT DIGITAL GEAR TOOTH SENSOR
ABSOLUTE MAXIMUM RATINGS
Power Supply Vee . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 18 V
Magnetic Flux Density .......................................... Unlimited
Output OFF Voltage .............................................. 18 V
Output ON Current, ISINK . • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 25 rnA
Operating Temperature Range, TA ........................... - 40°C to + 150°C
Storage Temperature Range, Ts ........................... - 65°C to + 170°C*
*Devices can be stored at + 200°C for short periods of time.
ELECTRICAL CHARACTERISTICS at TA
Characteristic
Symbol
= + 25°C, Vee = 4.5 Vto 18 V (unless otherwise noted)
Test Conditions
Supply Voltage
Vee
Output Saturation Voltage
VeElsatl
I"> B > 100G, Vee = 18 V,
Output Leakage Currrent
ISINK
= 20 rnA
10FF
I">B < -lOOG, Vee =VOUT = 18V
Supply Current
Icc
I"> B < -100G, Vee = 18 V, Output Open
Output Rise Time
t,
Output Fall Time
tf
Vee = 12 V, RL = 820, CL = 20 pF
Vee = 12 V, RL = 820, C, = 20 pF
Min.
Typ.
4.5
-
18
V
-
-
400
mV
fLA
rnA
-
Max.
Units
-
10
-
9.0
-
2.0
fLs
-
2.0
fLs
MAGNETIC CHARACTERISTICS
TA = 40°C to + 150°C
TA = +25°C
Characteristic
Min.
Max.
Min.
Max.
Units
Operate Point, Bop
-200
50
-200
50
G
Release Point, BRP
-250
0
- 250
0
G
40
70
40
70
G
Hysteresis, BH
6-4
UGN-3056U AND UGS-3056U
BIPOLAR DUAL HALL ELEMENT DIGITAL GEAR TOOTH SENSOR
APPLICATION NOTES
Optimum gear tooth sensor performance is dependent on careful design and implementation of the
magnetic circuit in which the sensor is one component. The magnetic circuit consists of the gear tooth
sensor IC, magnet, ferrous metal target and the immediate surrounding environment. Careful attention
to magnet selection and target design results in
larger functional air gaps and lower magnet costs.
density gradient is minimized across the IC surface.
Positioning the IC in the center of the magnet pole
face usually insures this. Additional steps can be
taken to linearize the pole face flux density gradient.
This includes the addition of a pole piece to the pole
face of the magnet.
Gear Tooth Sensor Assembly Operating
Parameters
Target Material and Geometry
The operating characteristics of the gear tooth
sensor Ie are specified in terms of operate and release points and hysteresis over the desired temperature range. On-chip temperature compensation
circuitry minimizes shifts in operate and release
points and hysteresis. On the higher functional level,
these parameters translate into minimal shifts in effective working air gap and switch point variability over
temperature.
The best ferrous target materials are cold rolled
steels (1010 to 1070 grades). Sintered metal compounds are also usable but care must be taken to
insure uniform composition and density of the target. Heat treatment to mechanically harden targets
may deteriorate their magnetic:~~ Such
treatments should be minimized.
Figures I through 3 can be used to determine the
tooth width, height and window spacing needed to
operate at a particular effective air gap at 25°C. These
figures are based on factory measurements using a particular magnet and gear tooth sensor IC assembly. (Contact the factory for details.) If the target is a gear with
a known diametral pitch, consult Figure 4.
The operating characteristics of the gear tooth
sensor assembly are most often specified in terms of
effective working air gap, switch point variability
and pulse width. Each of these assembly specifications depends on the target and magnet materials
and geometries as well as on the IC operate and
release points. Consult Figures 1 and 3 to select the
necessary target dimensions in order to obtain a reasonable working air gap and pulse width for the intended application. Once the target is available,
obtain a flux density map of the target, determine the
flux density gradient and the operate and release
points necessary to obtain the desired pulse width.
Before the latter steps are taken, consult the factory
to insure the most cost-effective choices.
Magnet Material and Geometry
The rare earth magnetic materials are the magnetic materials of choice in gear tooth sensing applications. They are more expensive than Alnico and
ceramic magnets, but their ten fold higher maximum
energy products and small thermal coefficients make
larger effective working air gaps possible. For additional information on magnets and a list of magnet
vendors, see Section 7, Applications.
II
Guide to Installation
The pole face of the magnet must be at least twice
the size of the device package. The length of the
magnet will determine the "reach out" of the magnet and hence the effective working air gap of the
overall assembly. The longer the magnet, the greater
will be the effective working air gap.
All Hall Effect integrated circuits are susceptible to
mechanical stress effects. Caution should be exercised '
to minimize the application of stress to the leads or the
epoxy package. Glues and potting compounds shrink
while curing and can shift the operating parameters of
a Hall Effect device.
The flux density across the pole face of a magnet
is not uniform. It is higher in the center and falls off
toward the sides. Because the gear tooth sensor IC
senses flux density gradients, it is nec,essary to position the IC on the magnet pole face such that the flux
To prevent permanent damage to the Hall cell,
heat-sink the leads during hand-soldering. Recommended maximum conditions for wave soldering are
provided in Section 8, Packages.
6-5
•
UGN-3056U AND UGS-3056U
BIPOLAR DUAL HALL ELEMENT DIGITAL GEAR TOOTH SENSOR
=1"
.g
115
292
105
2.67
95
241
85
~
2.16
"'"
75
1 91
'"
0
C
z
R12
::>
eli *
o
c::
EI
SECTION 7-APPLICATIONS
Applications Guide
The Hall Effect Sensor: How Does It Work? .............................................. 7-2
Getting Started ................................................................ 7-6
Electrical Interface .............................................................. 7-8
Rotary Activators for Hall Switches .................................................. 7-10
Ring Magnets-Detailed Discussion .................................................. 7-14
Ferrous Vane Rotary Activators .................................................... 7-16
Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-23
Operating Mode Enhancements-Compound Magnets ...................................... 7-23
Increasing the Flux Density By Improving the Magnetic Circuit ............................... 7-26
Magnet Selection .. ' ............................................................ 7-28
Current Limiting and Measuring ................................................... 7-30
Glossa ry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-35
Sources for Ferrite Toroids and Magnets .............................................. 7-36
Using Calibrated Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 7-37
The Hall Effect Sensor .............................................................. 7-38
Light Sensing Using Optical Integrated Circuits ............................................. 7-42
7-1
APPLICATIONS GUIDE
HALL EFFECT IC
APPLICAnONS GUIDE
THE HALL EFFECT SENSOR:
HOW DOES IT WORK?
Sprague Electric Company uses the latest bipolar
integrated circuit technology in combination with
the century-old Hall Effect to produce Hall Effect
ICs. These are contactless, magnetically activated
switches and sensors with the potential to simplify
and improve systems.
Low-Cost Simplified Switching
Simplified switching is a Hall sensor's strong
point. Sprague Hall Effect IC switches combine
Hall voltage generators, signal amplifiers, Schmitt
trigger circuits, and transistor output circuits on
single integrated circuit chips. Output is clean, fast,
and switched without bounce-an inherent problem with mechanical contact switches. A Sprague
Hall Effect switch typically operates at up to a 100
kHz repetition rate, and costs less than many common electromechanical switches.
Efficient, Effective, Low-Cost Linear Sensors
The Sprague linear Hall Effect sensor detects the
motion, position, or change in field strength of an
electromagnet, a permanent magnet, or a ferromagnetic material with an applied magnetic bias.
Energy consumption is very low. The output is linear and temperature-stable. The sensor's frequency
response is flat up to approximately 25 kHz.
A Sprague Hall Effect sensor is more efficient and
effective than inductive or optoelectronic sensors,
and at a lower cost.
Sensitive Circuits For Rugged Service
The Hall Effect sensor is virtually immune to environmental contaminants and is suitable for use
Ullder severe service conditions. The circuit is very
sensitive and provides reliable, repetitive operation in close tolerance applications. The Hall Effect
sensor can see precisely through dirt and darkness.
Current Applications
Current applications for Sprague Hall Effect ICs
include use in ignition systems, speed controls, security systems, alignment controls, micrometers,
mechanical limit switches, computers, printers,
disk drives, keyboards, machine tools, keyswitches, and pushbutton switches. They are also
u&ed as tachometer pickups, current limit switches,
position detectors, selector switches, current sensors, linear potentiometers and brushless dc motor
commutators.
The basic Hall sensor is a small sheet of semiconductor material represented by Figure 1.
+Vcc
1
2
1-_~40 +VHALL
Dwg. No. 13,100
3
Figure 1
A constant voltage source, as shown in Figure 2,
will force a constant bias current to flow in the semiconductor sheet. The output will take the form of a
voltage measured across the width of the sheet that
will have negligible value in the absence of a magnetic field.
If the biased Hall sensor is placed in a magnetic
field with flux lines at right angles to the Hall current (Figure 3), the voltage output is directly proportional to the strength of the magnetic field. This
is the Hall Effect, discovered by E. F. Hall in 1879.
x
Dwg No. 13,101
Figure 2
Linear Output Hall Effect Devices
The Sprague UGN-3605 integrated circuit is a
Hall sensor in its simplest form. It is simply a Hall
element that will give an output voltage response
to applied magnetic field changes. Electrical connections for the UGN-3605 are shown in Figure 1.
Sprague also provides a calibrated version of UGN3605 with a calibration chart for engineering purposes.
7-2
APPLICATIONS GUIDE
sensitivity and temperature-stable characteristics.
The output of Type 3503 is ratiometric; that is, its
output is proportional to its supply voltage.
Digital Output Hall Effect Switches
The addition of a Schmitt trigger threshold detector with built-in hysteresis, as shown in Figure 6,
gives the Hall Effect circuit digital output capabilities. When the applied magnetic flux density exceeds a certain limit, the trigger provides a clean
transition from OFF to ON without contact bounce.
Built-in hysteresis eliminates oscillation (spurious
switching of the output) by introducing a magnetic
dead zone in which switch action is disabled after
the threshold value is passed.
+
Dwg. No 13,102
Figure 3
The output voltage of the UGN-3605 is quite
small. This can present problems, especially in an
electrically noisy environment. Addition of a stable
high-quality dc amplifier and voltage regulator to
the circuit (Figures 4 and 5) improves the transducer's output and allows it to operate over a wide
range of supply voltages. The modified device provides an easy-to-use analog output that is linear
and proportional to the applied magnetic flux density.
+
Figure 6
An open-collector NPN output transistor added
to the circuit (Figure 7) gives the switch digital logic
compatibility. The transistor is a saturated switch
that shorts the output terminal to ground wherever
the applied flux density is higher than the ON trip
point of the device. The switch is compatible with
all digital families. The output transistor can sink
enough current to directly drive many loads, including relays, triacs, SCRs, LEDs, and lamps.
The circuit elements in Figure 7, fabricated on
a monolithic silicon chip and encapsulated in a
small epoxy or ceramic package, are common to all
Sprague Hall Effect digital switches. Differences
between device types are generally found in specifications such as magnetic parameters, operating
temperature ranges, and temperature coefficients.
Operation
All Hall Effect devices ace activated by a magnetic
field. A mount for the the devices, and electrical
connections, must be provided. Parameters such as
load current, environmental conditions, and supply voltage must fall within the specific limits
shown in the appropriate Sprague documentation.
Magnetic fields have two important characteristics-flux density and polarity (or orientation). In
the absence of any magnetic field, most Sprague
Hall Effect digital switches are designed to be OFF
(open circuit at output). They will turn ON only if
subjected to a magnetic field that has both sufficient
density and the correct orientation.
Figure 4
Figure 5
The Sprague UGN-3501 is this type of linear output device. In the three-lead "T" and "U" packages, the UGN-3501 is almost exactly the circuit
described above. The UGN-3501 is also furnished
in the "K" and "U" package. In that case, it has a
differential output and a pinout that can be used to
establish an offset voltage null.
The UGN-3503 and UGS-3503 have improved
7-3
APPLICATIONS GUIDE
pole approaches the branded face of the switch, the
Hall cell is exposed to increasing magnetic flux density. At some point (240G in this case), the output
transistor turns ON and the output voltage goes to
zero (Figure 10). That value of flux density is called
the operate point. If we continue to increase the
field's strength, say to 600 G, nothing more happens. The switch turns ON once and stays ON.
To turn the switch OFF, the magnetic flux density must fall to a value far lower than the 240 G
operate point because of the built-in hysteresis. For
this example we use 90 G hysteresis, which means
the device turns OFF when flux density decreases
to 150 G (Figure 11). That value of flux density is
called the release point.
Dwg No 13,106
Figure 7
Sprague Hall switches have an active area that is
closer to one face of the package (the face with the
lettering, the branded face). To operate the switch,
the magnetic flux lines must be perpendicular to
this face of the package, and must have the correct
polarity. If an approaching south pole would cause
switching action, a north pole would have no effect. In practice, a close approach to the branded
face of a Sprague Hall switch by the south pole of a
small permanent magnet will cause the output
transistor to turn ON (Figure 8).
A Transfer Characteristics Graph (Figures 10 and
11) plots this information. It is a graph of output
as a function of magnetic flux density (measured
in gauss) presented to the Hall cell. The magnetic
flux density is shown on the horizontal axis. The
digital output of the Hall switch is shown along the
vertical axis.
Dwg. No 13,108
Figure 9
Characteristics and Tolerances
The exact magnetic flux density values required
to turn Hall switches ON and OFF differ for several
reasons, including design criteria and manufacturing tolerances. Extremes in temperature will also
somewhat affect the operate and release points.
For each device type, Sprague provides worstcase magnetic characteristics for the operate value,
the release value, and hysteresis. Maximum and
minimum values for the magnetic parameters at the
temperature extremes are shown in Table 1.
All Sprague switches are guaranteed to turn ON
at or below the maximum operate point flux density. When the magnetic field is reduced, all devices
will turn OFF before the flux density drops below
the minimum release point value. Each device is
guaranteed to have at least the minimum amount
of hysteresis to ensure clean switching action. This
hysteresis ensures that, even if mechanical vibration or electrical noise is present, the switch output
is fast, clean, and occurs only once per threshold
crossing.
Figure 8
To acquire data for this graph, add a power supply and a pull-up resistor that will limit current
through the output transistor and enabl~ the value
of the output voltage to approach zero (Figure 9).
In the absence of an applied magnetic field (0 G),
the switch is OFF, and the output voltage equals
the power supply (12 V). A permanent magnet's
south pole is then moved perpendicularly toward
the active area of the device. As the magnet's south
7-4
APPLICATIONS GUIDE
12
12
m
'O.P.
0
:, l
!:i
> 9
L1J
6
0
>
:!:
I::J
D.
3
0
I
I
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I
I
I
I
~
200
I
I
:!:
I::J
D.
3
400
500
600
I
I
I
R.P.:
--
I
0
0
100
200
300
400
600
500
MAGNETIC FLUX DENSITY IN GAUSS
MAGNETIC FLUX DENSITY IN GAUSS
Dwg. No. 13,109
Figure 10
I
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300
I
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l-
0
100
6
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m
Dwg. No. 13,110
Figure 11
TABLE 1
Characteristics of Hall Effect Switches
Operating'"
Sprague
Supply
Supply
Leakage
Typ. Typ.
Voltage
Current
Current
Rise Fan
Typ.
Max. Min. Max. Typ. Max. VCl(~.lt) Typ. Max. Time Time
(G)
(V) (rnA) (rnA) (mV) (ILA) (ILA) (ns) (ns)
(V)
Releaset
Point
Operatet
Point
Temperature Min. Max.
Min.
(G)
(G)
(G)
3013
HH,LT,LL,T,U, UA
Switch
UGN
-
450
25
24
3.0
5.0
85
0.05
10
150
400
HH,LT,LL,T,U, UA Switch
UGN
UGS
-
500
125
-
4.5
3019
4.5
24
3.0
5.0
85
0.05
10
150
400
Switch
UGN
UGS
-
350
50
-
4.5
24
3.0
5.0
85
0.05
10
150
400
UGN
UGS
-
250
-250
-
4.5
24
3.0
5.0
85
0.05
10
150
400
Biased
Latch
UGN
-
50
50
-
4.5
24
3.0
5.0
85
0.05
10
150
400
Switch
UGN
UGS
-
200
50
-
4.5
24
3.0
5.0
85
0.05
10
150
400
Latch
UGN
UGS
50
250
-250
-50
4.5
24
3.0
7.0
85
0.2
1.0
100
200
50
350
-350
-50
4.5
24
3.0
7.0
85
0.2
1.0
100
200
Type
3020
3030
3035
3040
3075
Package
HH,LT,LL,T,U, UA
HH,LT,LL,T,U, UA
U
HH,LT,LL,T,U, UA
HH,LT,LL,T,U, UA
Description
Bipolar
Switch
Range'"
3076
HH,LT,LL,T,U, UA
Latch
UGN
UGS
3077
HH,T,U,LT,LL, UA
Bipolar
Latch
UGN
UGS
50
150
-150
-50
4.5
24
3.0
7.0
85
0.02
1.0
100
200
3120
HH,T,U,UA
Switch
UGN
UGS
-
350
50
-
4.5
24
4.7
8.0
85
0.05
10
40
180
3131
HH,T,U, UA
UGN
UGS
-75
95
-95
75
4.5*
24
-
7.0
85
10
40
180
UGN
UGS
70
200
50
180
4.5
24
4.7
8.0
10
40
180
3140
3201
3203
3220
3275
3276
3277
Bipolar
Switch
HH,T,U, UA
Switch
K
Dual Output
Switch
K
Dual Output
Switch
UGN
-
350
25
-
5.0
16
K
Dual Output
Switch
UGN
-
350
50
-
4.5
16
3.5
K
Dual Output
Latch
UGN
UGS
50
250
-250
-50
4.5
24
K
Dual Output
Latch
UGN
UGS
50
350
-350
-50
4.5
K
Dual Output
Latch
UGN
UGS
50
150
-150
-50
4.5
UGN
-
750
100
'UGN = -20'C to +85'C.
UGS = - 40'C to + 125'C.
tea 25'C
7-5
-
5.0
85
0.05
25
400
(Max.)
-
100
-
-
25
400
(Max.)
-
100
-
-
9.0
110
0.1
20
-
-
-
7.0
85
-
10
40
180
24
-
7.0
85
-
10
40
180
24
-
7.0
85
-
10
40
180
16
20
20
APPLICATIONS GUIDE
1 "0 x 0.2" 20-POLE-PAIR RING
(RADIAL POLES)
GETTING STARTED
400 , . - - , - - - . . . - - - - - . . , . - - - - - - ,
Since the electrical interface is usually straightforward, the design of a Hall Effect system should
begin with the physical aspects. In position-sensing
or motion-sensing applications, the following questions should be answered:
How much and what type of motion is there?
What angular or positional accuracy is required?
How much space is available for mounting the
sensing device and activating magnet?
How much play is there in the moving assembly?
How much mechanical wear can be expected
over the lifetime of the machine?
Will the product be a mass-produced assembly,
or a limited number of machines that can be individually adjusted and calibrated?
What temperature extremes are expected?
A careful analysis will pay big dividends in the
long term.
The Analysis
The field strength of the magnet should be investigated. The strength of the field will be the greatest
at the pole face, and will decrease with increasing
distance from the magnet. The strength of the magnetic field can be measured with a gaussmeter or a
calibrated linear Hall sensor, such as a Sprague
UGN-3503U (see Appendix II).
A plot of field strength (magnetic flux density) is
a function of distance along the intended line of
travel of the magnet. Hall device specifications
(sensitivity in mV/G for a linear device, or operate
and release points in gauss for a digital device) can
be used to determine the critical distances for a particular magnet and type of motion. Note that these
field strength plots are not linear, and that the
shape of the flux density curve depends greatly
upon magnet shape, the magnetic circuit, and the
path traveled by the magnet.
Total Effective Air Gap (TEA G)
Hall Effect switches are offered in two packages,
"T" and "U." The "U" package is about 0.020"
(0.05 mm) thinner than the "r' package. The difference is found in the distance from the branded
face of the package to the surface of the Hall cell:
The active area depth. The "T" pack's active
area depth is 0.036" (0.9 mm); the "U" pack's is
0.016" (0.4 mm)
Total effective air gap, or TEAG, is the sum of
active area depth and the distance between the
package's surface and the magnet's surface. The
graph of flux density as a function of total effective
air gap (Figure 12A) illustrates the considerable increase in flux density at the sensor provided by the
thinner package. The actual gain depends on the
characteristic slope of flux density for a particular
magnet.
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300
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100
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800
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600
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"x
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z
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400
\
200
o
o
0.05
0.10
G=0.05
~~(
'"
0.15
0.20
0.25
0.30
0.35
0.40
DISTANCE D !INCHES)
Dwg No 13,113
Figure 13
from the centerline of the magnet to the centerline
of the package. Air gap is specified because of its
obvious mechanical importance, but bear in mind
that to do any calculations involving flux density,
the "package contribution" must be added and the
TEAG used, as before. The slide-by mode is commonly used to avoid contact if overextension of the
mechanism is likely. The use of strong magnets
and/or ferrous flux concentrators in well-designed
slide-by magnetic circuits will allow better sensing
precision with smaller magnet travel than the headon mode.
Magnet manufacturers generally can provide
head-on flux density curves for their magnets, but
they often do not characterize them for slide-by operation, possibly because different air gap choices
lead to an infinite number of these curves; however, once an air gap is chosen, the readily available
head-on magnet curves can be used to find the peak
flux density (a single point) in the slide-by application by noting the value at the total effective air gap.
:-~~~o--a·
.00"'''0'_.
~_-_-_-_-_-----""
"
S
N
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",- MAGNET
'---HALL EFFECT DEVICE
,,'
~_,
.
.
~~a.~o"o
S
N
I
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i
HALL EFFECT DEV!CE
ALNICO 8, 0.212'0, 0.187" L
.. _
MAGNET
Owg. No 13,115
1000
iii
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600
C
x
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u.
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"
400
-
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...............
200
o
o
0.05
~"'A(;"'F'
s
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EAG=O
05"
Figure 15
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in
zw
~
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BOO
0>'"
D
'0+
"
Use of a movable vane is a practical way to s\\ itch
a Hall device. The Hall device and magnet can be
molded together as a unit, thereby eliminating
alignment problems, to produce an extremely rugged switching assembly. The ferrous vane or vanes
that interrupt the flux could have linear motion, or
rotational motion, as in an automotive distributor.
Ferrous vane assemblies, due to the steep flux density/distance curves that can be achieved, are often
used where precision switching over a large temperature range is required.
ii,/'
/.>::.~/ .... "
-"'..
~
0.10
,'B'TE G-0.l0
~ t'--
0.15
0.20
0.25
DISTANCE D !lNCHESI
0.30
0.35
0.40
OW9. No. 13,114
Figure 14
7-7
APPLICATIONS GUIDE
Interface for digital logic integrated circuits usually requires only an appropriate power supply and
pull-up resistor.
A
B
C
Dwg No. 13,116
+5V
Figure 16
~he ferrous vane can be made in many configurations, as shown in Figure 16. With a linear vane
similar to that of Figure 16B, it is possible to repeatedly sense position within 0.002" over a 125°C temperature range.
ELECTRICAL INTERFACE FOR
DIGITAL HALL DEVICES
Figure 18A
The output stage of a digital Hall switch is simply
an open-collector NPN transistor. The rules for
use are the same as those for any similar switching
transistor.
When the transistor is OFF, there is a small output leakage current (typically a few nanoamps) that
usually can be ignored, and a maximum (breakdown) output voltage (usually 24 V), which must
not be exceeded.
When the transistor is ON, the output is shorted
to the circuit common. The current flowing through
the switch must be externally limited to less than a
maximum value (usually 20 rnA) to prevent damage. The voltage drop across the switch (VCEi"t) will
increase for higher values of output current. You
must make certain this voltage is compatible with
the OFF, or "logic zero," voltage of the circuit you
wish to control.
Hall devices switch very rapidly, with typical
rise and fall times in the 400 ns range. This is
rarely significant, since switching times are almost universally controlled by much slower
mechanical parts.
Common Interface Circuits
Figure 17 illustrates a simplified schematic symbol for Hall digital switches (Sprague Types 3013,
3019, 3020, 3030, 3040). It will make further explanation easier to follow.
+10V
Figure 18B
With current-sinking logic families, such as DTL
or the popular 7400 TTL series (Figure 18A), the
Hall switch has only to sink one unit-load of current
to the circuit common when it turns ON (1.6 rnA
maximum for TTL). In the case of CMOS gates (Figure 18B), with the exception of switching transients, the only current that flows is through the
pull-up resistor (about 0.2 rnA in this case).
Loads that require sinking currents up to 20 rnA
can be driven directly by the Hall switch.
A good example is a Light Emitting Diode (LED)
indicator that requires only a resistor to limit
current to an appropriate value. If the LED drops
1.4 Vat a current of 20 rnA, the resistor required for
use with a 12 V power supply can be calculated as:
12V -l.4V
0.02A
= 530 n
h,,,,,,
9COMMON
Dwg No 13,117
Figure 17
7-8
APPLICATIONS GUIDE
When the Hall switch is OFF (insufficient magnetic flux to operate), about 12 rnA of base current
flows through the 100 n resistor to the 2N5812 transistor, thereby saturating it and shorting the base
of the 2N3055 to ground, which keeps the load
OFF. When a magnet is brought near the Hall
switch, it turns ON, shorting the base of the 2N5812
to ground and turning it OFF. This allows:
The nearest standard value is 560 n, resulting in the
circuit of Figure 19.
+12V
12 V
56!l
Dwg No 13,120
=
210
m
A
of base current to flow to the 2N3055, which is
enough to saturate it for any load current of 4 A
or less.
The Hall switch cannot source current to a load
in its OFF state, but it is no problem to add a transistor that can. For example, consider using a 40669
triac to turn ON a 115 V or 230 V ac load. This triac
would require about 80 rnA of gate current to
trigger it to the ON condition. This could be done
with a 2N5811 PNP transistor, as shown below in
Figure 21.
When the Hall switch is turned ON, 9 rnA of base
current flows into the 2N5811, thereby saturating it
and allowing it to supply 80 rnA of current to trigger
the triac. When the Hall switch is OFF, no base
current flows in the 2N5811, which turns it OFF
and allows no gate current to pass to the triac. The
4.7 kn and the 1 kn resistors were added as a safeguard against accidental turn-on by leakage currents, particularly at elevated temperatures. Note
that the + 12 V supply common is connected to the
low side of the ac line, and in the event of a mixup,
the Hall switch and associated low-voltage circuitry
would be 115 V above ground. Be careflll!
Figure 19
Sinking more current than 20 rnA requires a current amplifier. For example, if a certain load to be
switched requires 4 A and must turn ON when the
activating magnet approaches, the circuit shown in
Figure 20 could be used.
+12V
Dwg No 13,121
Figure 20
+
115/230 VAC
+12V
4.7K
1.2K
2N5811
120
1K
L-____________________________
~------~-----------
COMMON
t
Figure 21
7-9
Dwg No 13,122
APPLICATIONS GUIDE
ROTARY ACTIVATORS FOR
HALL SWITCHES
A frequent application involves the use of Hall
switches to generate a digital output proportional
to velocity, displacement, or position of a rotating
shaft. The activating magnetic field for rotary applications can be supplied in eith!,!r of two ways:
Magnetic Rotor Assembly
The activating magnet(s) are fixed on the shaft
and the stationary Hall switch is activated with
each pass of a magnetic south pole (Figure 22A). If
several activations per revolution are required, rotors can sometimes be made inexpensively by
molding or cutting plastic or rubber magnetic material. Ring magnets can also be used. Ring magnets are commercially available disc-shaped
magnets with poles spaced around the circumference. They will operate Hall switches dependably
and at reasonable costs.
A.RADIAL
B.AXIAL
Dwg. No 13,124
Figure 23
Properly designed vane switches can have very
steep flux density curves, yielding precise and stable switching action over a wide temperature
range.
A. MAGNETIC ROTOR
B. FERROUS VANE ROTOR
Figure 22
Ring magnets do have limitations:
The accuracy of pole placement (usually within 2
or 3 degrees).
Uniformity of pole strength (± 5'70, or worse).
These limitations must be considered in applications requiring precision switching.
Ferrous Vane Rotor Assembly
Both the Hall switch and the magnet are stationary (Figure 22B); the rotor interrupts and shunts
the flux with the passing of each ferrous vane.
. Vane switches tend to be a little more expensive
than ring magnets, but because the dimensions and
configuration of the ferrous vanes can be carefully
controlled, they are often used in applications requiring precise switching or duty cycle control.
Ring Magnets for H:all Switch Applications
Ring magnets suitable for use with Hall switches
are readily available from magnet vendors in a variety of different materials and configurations. The
poles may be oriented either radially (Figure 23A)
or axially (Figure 23B) with up to 20 pole-pairs on a
one-inch diameter ring. For a given size and pole
count, rings with axial poles have somewhat higher
flux densities.
Materials most commonly used are various Alnicos, Ceramic 1, and barium ferrite in a rubber or
plastic matrix material. Manufacturers usually have
stock sizes with a choice of the number of pole
pairs. Custom configurations are also available at a
higher cost.
7-10
APPLICATIONS GUIDE
Alnico is a name given to a number of aluminumnickel-cobalt alloys that have a fairly wide range of
magnetic properties. In general, Alnico ring magnets have the highest flux densities, the smallest
changes in field strength with changes in temperature, and the highest cost. They are generally
too hard to shape except by grinding and are fairly
brittle, which complicates the mounting of bearings or arbor.
soft enough to shape using conventional methods.
It is also possible to mold or press them onto a shaft
for some applications. They do have temperature
limitations ranging from 70°C to 150°C, depending
on the particular material, and their field strength
changes more with temperature than Alnico or
Ceramic 1.
Regardless of material, ring magnets have limitations on the accuracy of pole placement and uniformity of pole strength which, in turn, limit the
precision of the output waveform. Evaluations
have shown that pole placement in rubber, plastic,
and ceramic magnets usually falls within 2° or 3° of
target, but 5° errors have been measured. Variations of flux density from pole to pole will commonly be ± 5%, although variations of up to ± 30%
have been observed.
Figure 24 is a graph of magnetic flux density as a
function of angular position for a typical 4 pole-pair
ceramic ring magnet, one inch in diameter, with a
total effective air gap of 0.066" (0.030" clearance plus
0.036" package contribution). It shows quite clearly
both the errors in pole placement and variations of
strength from pole to pole.
Ceramic 1 ring magnets (trade names Indox,
Lodex) have somewhat lower flux densities (field
strength) than the Alnicos, and their field strength
changes more with temperature; however, they are
considerably lower in cost and are highly resistant
to demagnetization by external magnetic fields.
The ceramic material is resistant to most chemicals
and has high electrical resistivity. Like Alnico, they
can withstand temperatures well above that of
Hall switches and other semiconductors, and must
be ground if reshaping or trimming is necessary.
They may require a support arbor to reduce mechanical stress.
The rubber and plastic barium ferrite ring magnets are roughly comparable to Ceramic 1 in cost,
flux density, and temperature coefficient, but are
FOUR-POLE-PAIR CERAMIC RING MAGNET (1"DAXIAL POLES)
1000
800
I\
I \
600
iii
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'"
400
,.~
200
...:
l-
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UJ
0
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z
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-200
-400
-600
(\
I \
/ \
I \
/ \
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.......
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\ I
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x
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(\
I
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V
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V -d-i
TEAG .06S"
-800
I
-1000
I
1\
\I
V
I
I
o
4S
90
13S
180
22S
MAGNET ROTATION (DEGREES)
Figure 24
7-11
270
31S
360
Dwg. No 13,125
APPLICATIONS GUIDE
be as high as + 230 G (250 G maximum operate,
- 20 G minimum hysteresis). Figure 26A shows
two cases of operate and release with one device
operating at the maximum operate and release
points, and the other with minimum operate and
release points.
A frequent concern with ring magnets is ensuring sufficient flux density for reliable switching.
There is a trade-off between the number of polepairs and the flux density for rings of a given size.
Thus, rings with large numbers of poles have lower
flux densities. It is important that the Total Effective
Air Gap (TEAG) is kept to a minimum, since flux
density at the Hall active area decreases by 5 G or
6 G per 0.001" for many common rings. This is
clearly shown in Figure 25, a graph of flux density
at a pole as a function of TEAG for a typicaI20-polepair plastic ring magnet. Also shown in Figure 25 is
the effect of "package contribution" to the TEAG.
The standard Sprague "T" package contributes
about 0.036", while the thin "U" package contributes only about 0.016". The other factor contributing to TEAG is mechanical clearance, which should
be as small as possible consistent with dimensional
tolerances of the magnet, bearing tolerances, bearing wear, and temperature effects on the Hall
switch mounting bracket.
~
iii
~
.!:''""! "...'"5l
..
250
230
100
50
I-
iii
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w
o
-50
~ ~-100
.....
IL '"
g-23D
Z
-250
Dwg No. 13,127
1"0 x 0.2" 20·POLE·PAIR RING
(RADIAL POLES)
400
iii
.
If)
::>
Figure26A
r---r---,--------,--------,
In applications previously discussed, the Hall
switch was operated (turned ON) by the approach
of a magnetic south pole (positive flux). When the
south pole was removed (flux approaches zero),
the Hall switch had to release (turn OFF). On ring
magnets, both south and north poles are present
in an alternating pattern. The release point flux
density becomes less important, for if the Hall
switch has not turned OFF when the flux density
goes to zero (south pole has passed), it will certainly turn OFF when the following north pole
causes flux density to go negative. Bipolar Hall
switches take advantage of this extra margin in release point flux values to achieve lower operate
point flux densities, a definite advantage in ring
magnet applications.
The Bipolar Latch
Unlike the Type 3030 bipolar switch, which may
operate and release with a south pole or north pole,
the Sprague bipolar latch offers a more precise control of the operate and release parameters. This
Hall integrated circuit has been designed to operate
(turn ON) with a south pole only; it will then remain ON when the south pole has been removed.
In order to have the bipolar latch release (turn
OFF), it must be presented with a north magnetic
pole. This alternating south pole-north pole operation, when properly designed, will produce a duty
cycle approaching 50%.
300
,.~
I-
iii
z
w
0
200
x
::>
..J
Ie
0
;:
W
z
"..::;
100
oL-------~------~------~
o
0.05
0.10
0.15
TOTAL EFFECTIVE AIR GAPIINCHESI
Dwg No 13,126
Figure 25
What is a Bipolar Switch?
A bipolar switch, the Sprague Type 3030, has a
maximum operate point of + 250 G, a minimum release point of - 250 G, and a minimum hysteresis
of 20 G at + 25°C; however, the operate point could
be as low as - 230 G ( - 250 G minimum release,
+ 20 G minimum hysteresis) and the release could
7-12
APPLICATIONS GUIDE
The Sprague Type 3075 was designed specifically
for applications requiring a tightly controlled duty
cycle, such as in brushless de motor commutation.
This was accomplished with the introduction of
the bipolar latch in 1982. The 3075 has become
very popular as a brush less de motor commutator,
shaft encoder, speedometer element, and tachometer sensor.
Duty cycle is controlled with an alternating magnetic field, as shown in Figure 26B.
cients of some common magnetic materials are
given below:
Material
RubberlPlastic
Ceramic 1
Alnico 2, 5
Alnico 8
Temperature Coefficient
-0.2% to -0.3% peroC
- 0.15% to - 0.2% per °c
- 0.02% to - 0.03% per °c
:!:O.O1% eroC
If we are considering a ceramic ring magnet with
a worst-case temperature coefficient of - 0.2%rC,
we must add some extra flux density to the requirement at room temperature to ensure that we
still have + 350 G per south pole at + 85°C. This
amount is:
[(85°C-25°C) x 0.2%rC] 350G = +42G
Thus, the flux density that will ensure that the Hall
switch will operate over temperature is 350 G +
42 G = 392 G per south pole at + 25°C.
Follow the same procedure for the north pole
requirements. If the magnet will supply + 350 G
per south pole and - 350 G per north pole at
+ 85°C, it will supply even more flux density per
north pole at - 20°C because of the negative temperature coefficient.
In applications where temperature conditions
are more severe, Alnico magnets are considerably
better than the ceramic magnets we considered.
It is also possible to order custom Hall switches
from Sprague with specifications tailored to your
application. For example, you can specify operate
and release points at a particular temperature, with
temperature coefficients for operate and release
points, if that is better suited to your application.
On a custom basis, Sprague Hall switches are available with operate and release point temperature
coefficients of less than 0.3 GrC, and with operate
flux densities of less than 100 G.
If you intend to use a low-cost, low flux density
ring magnet,. then the Sprague UGN-3030U device
in the 0.060" package would be the best choice. The
thin package costs no more, and the package
contribution is reduced from 0.036" to 0.016",
which results in a significant improvement in peak
flux density from a magnet, as shown previously
in Figure 25.
If the rotor drive can withstand an increased
torque requirement, consider a ferrous flux concentrator. Flux density can be increased by 10% to 40%
in this manner. A concentrator of 0.03125" mild
steel having the same dimensions as, and cemented to, the back surface of the Hall switch, will
increase flux density by about 10%. A return path
of mild steel from the back side of the device to the
adjacent poles can add even more. Often the functions of mounting bracket and flux concentrator can
be combined. Additional information can be found
in the section on flux concentrators.
DUTY CYCLE (LATCH OUTPUT)
Owg No 13,128
Figure26B
Design Example
Given:
Operating temperature range of - 20° to + 85°C.
Bipolar Hall switch UGN-3030U in standard "U"
package:
Maximum operate point + 250 G from - 20° to
+ 85°C.
Minimum release point - 250 G from - 20°C to
+ 85°C.
Air gap package contribution 0.016".
Necessary mechanical clearance 0.030".
First, find the Total Effective Air Gap:
TEAG = clearance + package contribution
TEAG = 0.030" + 0.016" = 0.046"
Now, determine the necessary flux density sufficient to operate the Hall switch, plus 40%.
To operate the Hall switch, the magnet must supply a minimum of :!: 250 G at a distance of 0.046"
over the entire temperature range. Good design
practice requires the addition of extra flux to provide some margin for aging, mechanical wear, and
other imponderables. If we add a pad of 100 G, a
reasonable number, the magnet required must supply:!: 350 G at a distance of 0.046" over the temperature range.
Temperature Effects
Unfortunately, magnet strength is affected by
temperature to some degree. Temperature coeffi-
7-13
APPLICATIONS GUIDE
RING MAGNETS
-DETAILED DISCUSSION
An Inexpensive Alternative
Innovative design can produce surprisingly good
results. Rubber and plastic magnet stock comes in
sheets. One side of the sheet is magnetic north; the
other side is south. This material is relatively inexpensive and can easily be stamped or die-cut into
various shapes.
These properties prompted one designer to fabricate an inexpensive magnetic rotor assembly that
worked very well. The rubber magnet stock was
die-cut into a star-shaped rotor form, as shown in
Figure 27. A nylon bushing formed a bearing, as
shown in Figure 28.
0
Figure 29
sOs s
s
s
Dwg No. 13,129
Figure 27
Figure 30
Ring Magnet Selection
When you discuss your application with a
magnet vendor, the following items should
be considered:
Dwg. No 13.130
Mechanical Factors
-Dimensions and tolerances.
-Mounting hole type and
maximum eccentricity.
-Rotational speed.
-Mechanical support required.
-Coefficient of expansion.
Magnetic Factors
-Poles: number, orientation, and placement
accuracy.
-Flux density at a given TEAG (remember to
add the Hall switch package contribution to
the clearance figure).
-Magnetic temperature coefficient.
Environmental Factors
- Tolerance of the material to the working environment (temperature, chemical solvents,
electric poten tials).
Figure 28
Finally, a thin mild steel backing plate was
mounted to the back of the assembly to give mechanical strength and to help conduct the flux back
from the north poles on the opposite side. This actually served to form apparent north poles between
the teeth; the measured flux between south pole
teeth is negative. Figure 29 shows the completed
magnetic rotor assembly, essentially a ring magnet
with axial poles.
The Hall switch was mounted with its active surface close to the top of the rotor assembly, facing
the marked poles. There is some versatility in this
approach, as asymmetrical poles can be used to
fabricate a rotor that will allow trimmable ON
time and, thus, work as a timing cam. Figure 30
illustrates a cam timer adjusted to 180 0 ON and
1800 OFF.
7-14
APPLICATIONS GUIDE
Flux density curves from several typical ring
magnets are included to present an idea of what
can be expected from various sizes and materials.
Figure 31 shows the curve for a ring similar in size
and material to that of Figure 25, but with 10 polepairs instead of 20 (note increased flux density
values). Figure 32 shows the curve from a onepole-pair Alnico 8 ring. Figure 33 shows the curve
from a three-pale-pair Ceramic 1 ring. Figure 34
shows the curves from a four-pale-pair Ceramic 1
ring, with and without a ferrous flux concentrator.
Incoming inspection of ring magnets is always
advisable. You can ensure the magnets are within
the agreed upon magnetic specifications by making
measurements with a commercial gaussmeter, or a
calibrated linear Hall device mounted in a convenient test fixture. Calibrated UGN-3504U Hall devices and technical assistance are available from
Customer Service, Sprague Sensor Division, Concord, NH (603) 224-2755 or 224-1961.
1-POLE-PAIR ALNICO 8 (AXIAL POLES)
10'POLE-PAIR PLASTIC 1 (RADIAL POLESI
400r-------~------_,------__,
400r-----~,_-------.------__,
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OL-____
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0.10
0.15
0.125"
__________
~~~
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______
Dwg. No. 13,134
Figure 32
Dwg. No 13,133
Figure 31
3-POLE-PAIR CERAMIC 1 (RADIAL POLES)
4-POLE-PAIR CERAMIC 1 (RADIAL POLES)
400
400r------,-nr-----_,--------,
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300r-------~~r_---1------~
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TOTAL EFFECTIVE AIR GAP (INCHES)
TOTAL EFFECTIVE AIR GAP (INCHES)
In
~
0.10
TOTAL EFFECTIVE AIR GAP (INCHES)
0.10
0.20
0.30
TOTAL EFFECTIVE AIR GAP (INCHES)
Dwg No. 13.136
Dwg. No. 13,135
Figure 34
Figure 33
7-15
APPLICATIONS GUIDE
over the duty cycle of the output waveform. Ferrous vane rotors are a good choice where precise
switching is desired over a wide range of temperatures. As the vane passes between magnet and Hall
switch, progressively more flux will be blocked or
shunted. Small variations in lateral position have a
very small effect on the transition point.
A Ferrous Vane In Operation
Figure 35 combines top and front views of a ferrous vane magnet/Hall switch system with the
graph of flux density as a function of vane travel
produced by this system. Note that the drawings
and the graph are vertically aligned along the horizontal axis. Position is measured from the leading
edge of the vane to the centerline of the magnet/
Hall device.
FERROUS VANE ROTARY
ACTIVATORS
A ferrous vane rotor assembly is the alternative to
magnetic rotors for rotary Hall switch applications.
As shown previously, a single magnet will hold a
Hall switch ON except when one of the rotor vanes
interrupts the flux path and shunts the flux path
away from the Hall switch. The use of a single stationary magnet allows very precise switching by
eliminating ring magnet variations, placement, and
strength. Unlike the evenly spaced poles on ring
magnets, the width of rotor vanes can easily be
varied. It is possible to vary the Hall switch OFF
and ON times, which gives the designer control
2.5"0 CUP VANE
(150 G/DEGREE)
~TAL EFFECTIVE AIR GAP
/
FERRO~US
VANE
(22.5)
HALL
~
....
ACTIVE
FERROUS VANE
MAGNET
@
& H A L L SWITCH
FRONT VIEW
,
800
I
(
600
400
EFFECTIVE VANE WIDTH _
r-
,"'24.5'1
I
~ OPERATE POINT
RELEASE POINT~
200
--
ACTUAL VANE
WIDTH 22.50
60
I
40
---4
20
0
VANE TRAVEL (DEGREES)
Figure 35
7-16
20
40
60
Dwg. No. 13,137
APPLICATIONS GUIDE
Initially, when the vane is located entirely to the
left of the magnet, the vane has no effect and the
flux density at the sensor is at a maximum of 800 G.
As the leading edge of the vane nears the magnet,
the shunting effect of the vane causes the flux density to decrease in a nearly linear fashion. There,
the magnet is covered by the vane and flux density
is at a minimum. As the vane travels on it starts to
uncover the magnet. This allows the flux to increase to its original value. After that, additional
vane travel has no further influence on flux density
at the sensor.
A Hall switch located in the position of the sensor
would initially be ON because of the presence of
the magnetic field. Somewhere in the linearly decreasing region, the flux would fall below the release point, and the Hall switch would turn OFF. It
would remain OFF until the increasing flux reaches
the operate point for that particular Hall switch.
Recall that the operate point flux density is greater
than the release point flux density by the amount
of hysteresis for that particular Hall switch.
The interval during which the Hall switch remains OFF is determined by the actual width of the
vane and the steepness of the magnetic slope, as
well as by the operate and release point flux density
values for the Hall switch. This interval is called the
effective vane width, and it is always somewhat
greater than the physical vane width ..
cup rotors, radial bearing wear or play is the significant factor in determining the clearances, while
axial play is relatively unimportant. Cup rotors
have been used very sucessfully in automotive ignition systems. The dwell range is determined by
the ratio of the vane-to-window widths when the
rotor is designed. Firing point stability may be held
to ± 0.005 distributor degrees per degree Celsius in
a well-designed system.
Material
Vanes are made of a low carbon steel to minimize
the residual magnetism and to give good shunting
action. The vane thickness is chosen to avoid magnetic saturation for the value of flux density it
must shunt. Vanes usually are between 0.03" and
0.06" thick.
Vane/Window Widths, Rotor Size
Generally, the smallest vanes and window on a
rotor should be at least one and one-half times the
width of the magnet pole to· provide adequate
shunting action and to maintain sufficient differential between the OFF and ON values of
flux density.
In Table 2, the maximum flux density (obtained
with window centered over the magnet, the minimum flux density (vane centered over the magnet),
and the difference between the two values are tabulated for three cases:
1. Vane and window width the same as magnet
pole width.
2. Vane and window width one and one-half
times magnet pole width.
3. Vane and window width two times the magnet pole width.
In each case the magnet is 0.25" x 0.25" x 0.125"
samarium cobalt; the air gap is 0.1"; the rotor vanes
are made of 0.04" mild steel stock.
Rotor Design
Two commonly used rotor configurations are the
disk and the cup, as shown in Figure 36.
TABLE 2
Window Vane Width Factor
CUP
DISK
Flux Density with
Window Centered
Flux Density with
Vane Centered
Flux Change Density
Dwg No 13.138
Figure 36
The disk is easily fabricated and, hence, is often
used for low-volume applications such as machine
control. Axial movement of the rotor must be considered. Vane activated switches tolerate this quite
well, but the rotor must not hit the magnet or the
Hall switch.
Cup rotors are somewhat more difficult to fabricate and so are more expensive, but dealing with a
single radial distance simplifies calculations and allows precise control of the output waveforms. For
1.0
1.5
2.0
630G
713G 726G
180G
450G
100G 80G
613G 646G
If a small rotor with many windows and vanes is
required, a miniature rare earth magnet must be
used to ensure sufficient flux density for reliable
operation. For example, a 0.1" cubical samarium
cobalt magnet makes it practical to fabricate a 1.25"
diameter rotor with as many as 10 windows and
vanes. With fewer vanes, even further size reduction is possible.
7-17
APPLICATIONS GUIDE
Steep Magnetic Slopes for Consistent Switching
The flux density vane travel graph for most common vane configurations (Figure 35), is very nearly
linear in the transition regions. The Hall switch operate and release points fall in these linear transition regions, and it is'easily seen that if these values
change, the position of the vane which causes
the switching must change also. Figure 37 shows
the flux density as a function of vane position for
two different magnetic circuits. In one case the
magnetic slope is 2.5 G/miI. In the second case, it
is5.0G/miI.
If the 2.5 G/mil system is used with a Hall switch
known to have an operate point flux density of 300
G at + 25°C, the device would switch ON when the
vane is 85 mils past the center of the window at this
temperature. If the Hall switch operate point went
up to 400 G at a temperature of + 125°C (this represents Hall switch temperature coefficient of
1 G/°C), the vane must move to 120 mils past center,
a change in switching position of 45 mils. If the
same Hall switch is used in the second system having the 5 mil/G slope, the operate point would shift
only 20 mils, or half as much, since the slope is
twice as steep.
Slopes in typical vane systems range from
1 G/mil to 15 G/mil, and are affected by magnet type
and size, the magnetic circuit, and the total effective air gap. It is interesting to note that, although
slide-by operation can give very steep slopes, the
transition point is much affected by lateral motion
(change in air gap); therefore, vanes are often
preferred for applications involving play or
bearing wear.
1000
iii
Ul
.;:)
«
52
/
800
5 t'MIL-
>-
IiiZ
LIJ
600
2.5 G/MILI
C
x
:311.
400
0
-<
t;
z
~
:;
200
JI
~
tf
Small Air Gaps for Steep Slopes
The air gap should be as small as the mehanical
system allows. Factors to be considered are:
Vane material thickness and vane radius.
Maximum eccentricity for cup vanes.
Bearing tolerance and wear.
Change in air gap with temperature due to
mounting considerations.
.j
--- ~O'r"
0.02"
o
-300
~ ,-
-200
-100
o
100
200
300
VANE POSITION (MILS)
Dwg. No. 13,139
Figure 37
TABLE 3
Curve
A
Magnet
0.25"0, 0.25"LSamarium Cobalt
B
0.25"0, 0.25"L Samarium Cobalt
0.25"0, 0.125"L Samarium Cobalt
C
°
E
F
G
H
Air Gap
0.1"
0.1"
SlopeG/mii
14
9.85
No
0.1"
0.125"
9.0
8.7
Yes
Yes
0.1"
0.125"
0.125"
7.8
6.3
5.6
No
No
Yes
0.125"
4.5
No
0.25"0, 0.125"L Samarium Cobalt
0.25"0, 0.125"L Samarium Cobalt
0.25"0, 0.125"L Samarium Cobalt
0.25"0, 0.125"L Samarium Cobalt
0.25"0, 0.125"L Samarium Cobalt
Note: The "U" package is used for all measurements .•
7-18
'Concentrator
Yes
APPLICATIONS GUIDE
1000 r-------~--~,.~----~_r------_,--------r_------;_------,
700
~------~--~~~~~wt-+-t----~--------t-------f-------~
600 ~------~__----~-44c~~--+---~r-------t-------f-------~
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500
~------~----~~-4~tT-f~-1--~r-------t-------i-------~
400
~------f-------~-\--~~~~~-1--------r-------+-------~
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u.
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-150
-100
-50
0
50
100
VANE LEADING EDGE TO HALL SWITCH/MAGNET CENTERLINE (MILS)
.
ISYMBOL
MAGNET
AIR GAP SLOPEIG/MIL)
*CONC.
jo.2S'O,0.2S'L SAM.CO
0.1"
l'
2.
0.2S'O,0.2S·L SAM.CO
0.1'
9.85
NO
3 ...
0.2S"O,0.125'L SAM.co.
0.1"
9.0
YES
O.2S"O,O.2S'L SAM,CO
0.12S·
1
,
•
SAM.co.
YES
8.7
YES
0.1'
7.8
NO
S@
0.2S'o,O,12S'L
60
O.2S"D,O.2S"L SAM.CO
0.125"
6.3
NO
7 /),.
02S'O,O.12S'L SAM.CO,
0.12S'
S.6
YES
80
02S'O,O,12S"L SAM.co.
0.125'
4.5
NO
Dwg. No. 13,140
N
OS In-. *O,12S'O,0.2S·L
MILD STEEL
NOTE - THE 'U' PACKAGE IS USED FOR ALL MEASUREMENTS
Figure 38
In Figure 38 two different samarium cobalt magnets
are used in a vane system to illustrate the effects of
changes in air gap and magnet size. Note that only
the falling transition region is shown (transition regions are symmetrical). The distances on the hori-
zan tal axis have been measured from the leading
edge of the vane.
The term "air gap" as used in Figure 38 is not the
total effective air gap, but is simply the distance
from the face of the magnet to the surface of the
7--19
APPLICATIONS GUIDE
Hall switch. It does not include the package contribution. The "U" package is often used in ferrous
vane applications because it has a shallow active
area depth.
Flux Concentrators Pay Dividends
What if economic or size considerations dictated
the smaller magnet used in Figure 38, and mechanical considerations dictated the larger (0.125") air
gap, but the resulting flux density and slope (Curve
8) were not good enough? Curve 7 in Figure 38
shows the very substantial improvement that can
be achieved by adding simple flux concentrators.
Those used in the example were 0.125" in diameter
by 0.250" long, and were fastened behind the Hall
switch.
Design Example
The magnet/concentrator configuration we just
considered (Curve 7, Figure 38) seems to offer a
high performance/cost ratio. Following is an evaluation of its use in an automotive ignition system
using a 2.5" diameter cup rotor.
The initial timing and wide operating temperature range requirements for this application have
generally led designers to specify custom Hall
switches in terms of the minimum and maximum
operate or release point at + 25°C, plus a maximum
temperature cofficient on these parameters over
the operating temperature range. Representative
specifications might be:
+ 25°C Operate Point, Minimum ........ 300 G
+ 25°C Operate Point, Maximum ........ 450 G
+ 25°C Release Point, Minimum ......... 200 G
Temperature Coefficients:
A O.P./ Do T, maximum = + 0.7 GrC
Do R.P.I A T, maximum = + 1.0 GrC
Solid-state Hall effect ignition systems can be designed to fire either on operate or release of the Hall
switch. We have arbitrarily chosen to have the system in this example fire when the switch operates
and, thus, the operate point specifications of the
Hall switch (between 300 and 450 G at +125°C) will
determine the amount of uncertainty in the initial
timing of the spark. It is possible that the mechanical system would also make a contribution, but that
is not considered here.
Figure 39 shows the measured flux density at the
position of the sensor as a function of the vane
travel. The shape of the curve requires explanation:
Because the flat minimum and maximum flux regions are irrelevant, it is convenient to measure
from the vane's leading edge to the magnet centerline while plotting the falling transition, skip the
low flux region where the vane is shunting most of
the flux, and measure distance from the trailing
700
\
600
_ 500
U)
U)
~
r
MAGNETIC SLOPE
S.67G/MIL
\
:>
«
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>-
~ 400
z
w
o
-'
l../
'-.
J
300
;::
w
z
«
"::;
200
+25 "C"MIN.REL ASE POINT
10 0
-200
-150
-100
/
h
124 G/DIST. DEGREE
5°C OPERA E POINT MI X .1450 G)
II
\
)(
:>
~
V
(2.S"DIAMETER VANE)
Il /
J\ /-
-50
0
1"-
50
+250
1.20 t--IN
P OPERATE I>OINT MIN.(pOOG)
IAL TIMING UNCERTAIN Y@+250C
100
150
200
VANE LEADING(-) OR TRAILING(+) EDGE TO HALL SWITCH/MAGNET CENTERLINE(MILS)
Figure 39
7-20
Dwg No 13,141
APPLICATIONS GUIDE
changed, as that would affect the shape or slopes
of the magnetic flux density/vane travel curve of
Figure 39. Factors to be considered are the magnet
peak energy product tolerances, as well as manufacturing tolerances in the final Hall switch/magnet
assembly.
Temperature Stability of Operate Point
The Hall switch operate point temperature coefficient is 0.7 GrC in the 3000 series parts. To translate this into distributor degrees per degree Celius,
we take: 0_.__
7 G x D"b
lstn utor Degrees
edge of the vane to the magnet centerline while
plotting data for the rising transition. (The same
presentation would result if all data were plotted
while a vane passed the magnet, the center low flux
areas were snipped out, and the ends containing
the linear transitions were pulled together.) From
this graph, we can identify the magnetic slope of
the transition regions for our system-approximately 5.67 G per 0.001" of vane traveL
Calculations based on the rotor diameter (2.5")
show we have 22 mils of vane travel per distributor
degree. The 5.67 G/mil slope obtained from Figure
39 is equivalent to 125 G per distributor degree.
From the specifications it is known that the Hall
switch will operate when flux is between 300 and
450 G, leaving a 150 G window of uncertainty. At
+ 25°C, this will be:
1°C
A typical samarium cobalt magnet temperature
coefficient is - 0.04%rc. A magnetic field of 375 G
at + 25°C would decrease to 360 G at + 125°C.
For Figure 40, our system has a magnetic slope of
5.67 G/mil, giving an additional vane travel requirement at + 125°C of:
1 mil
.
(375 G-360 G) x 5.67 G = 2.7 mils
150G x Distributor Degree
125 G
1.2 Distributor Degrees
Additional contributions to the initial timing uncertainty will result if the Total Effective Air Gap is
700
\
SOD
iii 500
til
V
12.S·DIAMETER VANE)
~
"!!!..:
~ 400
MAGNETIC SLOPE
S.S7 G/MIL
124 G/DIST. DEGREE
./
_0.073'
\"
>-
I-O.OSS·-f--O.OS·-
1'-..1
t;t.,
5· C
OPER~
E POINT 14 ~SG)
~
z
W
Q
""
-'
125 G
0.0056 Distributor DegreesrC
The distributor timing would, therefore, change
0.56 degrees for a temperature change of 100°C.
A+2S.
12S·C REL ASE POINT 3S0G)J,
[.
~ 300
;:
w
z
"..:
+25°C R LEASE POI T 1260G)-
::!
200
\ "/
100
-200
-150
-100
-50
0
OPERATE
OINT 1375
)
/
50
100
150
200
VANE LEADINGI-l OR TRAILINGI+) EDGE TO HALL SWITCH/MAGNET CENTERLINEIMILS)
Dwg. No. 13,142
Figure 40
7-21
APPLICATIONS GUIDE
This translates to timing change of:
2. 7 m1·1 S x Distributor Degrees
22 mils
0.12 Distributor Degrees
for a temperature change of 100°C.
Effects of Bearing Wear
A ± lO-mil radial movement of the vane, with its
position adjusted to the approximate operate point
of the Hall switch, gave a measured change of
± 6 G. This translates into a change of:
6 G x Distributor Degrees =
124 G
Calculating Dwell Angle
and Duty Cycle Variations
The dwell angle in a conventional system is the
number of distributor degrees during which
the points are closed, which corresponds to the
amount of time current can flow in the coil's primary winding. In our example, current flows in the
coil primary from the time the Hall switch releases
until it operates, which is called the E:ffective vane
width. For nostalgic reasons we will assume an
eight-cylinder engine, which requires a distributor
rotor with eight windows and eight vanes of equal
size. One window-vane segment thus occupies 45
distributor degrees and will fire one cylinder. Let
us further assume a typical Hall switch operate
point of 375 G at + 25°C (A), and a + 25°C release
point of 260 G (B). From Figure 40 we find that the
points will close 40 mils before the vane's leading
edge passes the magnet centerline; they open 60
mils after the vane's trailing edge passes the magnet centerline. The effective vane width is greater
than the mechanical vane width by an amount:
Distributor Degrees
(60 m1·1 s + 40·1)
m1 s x
22 mils
0.048 Distributor Degrees,
which is equivalent to 0.097 crankshaft degrees.
Mounting Also Affects Stability
In the example above, it was assumed that the
physical relationship between the Hall switch and
the magnet was abolutely stable. In practice it is
necessary to design the mountings with some care
if this is to be true. It has been found that supporting the magnet or Hall switch with formed brackets
of aluminum or brass will often contribute a significant temperature-related error to the system. Use
of molded plastic housings has proven to be one of
the better mounting techniques.
Individual Calibration Techniques
In some applications, it may be desirable to have
the vane switch assemblies operate within a narrower range of vane edge positions than is possible
with a practical operate point specification for the
Hall switch; for example, if it were necessary to
reduce the initial timing window in the previous
case. One solution would be individual calibation.
Possible techniques include:
1) Adjusting the air gap by changing the magnet
position.
2) Adjusting the position of a flux concentrator behind the Hall switch.
.
3) Adjusting the position of a small bias magnet
mounted behind the Hall switch.
4) Demagnetizing the magnet in small increments
that would decrease the magnetic slope and,
thus, increase the temperature effects.
5) Adjusting the position of the Hall switch-magnet assembly relative to the rotor in a manner
similar to rotating an automotive distributor to
change the timing.
4.54 Distributor Degrees
This gives a dwell angle of (45° + 4.54°) = 49.54
distributor degrees at + 25°C. The duty cycle is:
49.4°
900 = 55.0% at + 25°C.
Using the specified worst-case temperature coefficients, we calculate the new operate and release
points at + 125°C to be 445 G (C) and 360 G (D), also
shown in Figure 40. The dwell angle at + 125°C
would then be:
45° + [(73 mils + 58 mils)
x Distributor Degrees]
22 mils
=
50.9 Distributor Degrees
The duty cycle is then:
50.9°
90°
56.6%.
7-22
APPLICATIONS GUIDE
The slide-by mode is also simple, can have reasonably steep slopes (to about 10 G/mil) and has no
problem with mechanism over-travel. It is, however, very sensitive to lateral play, as the flux density varies dramatically with changes in the air gap.
This can be seen clearly in the curves of Figure 42,
in which the flux density curves are plotted for actual slide-by operation with various air gaps. It is
apparent that the operating mechanism can have
little side play if precise switching is required.
OPERATING MODES
Head-on and Slide-By Modes
The most common operating modes are head-on
and slide-by. The head-on mode is simple and relatively insensitive to lateral motion, but cannot be
used where overextension of the mechanism might
damage the Hall switch. The flux density plot for a
typical head-on operation (Figure 41) shows that
the magnetic slope is quite shallow for low values
of flux density, a disadvantage that generally requires extreme mechanism travel and extreme sensitivity to flux changes in operate and release points
of the Hall switch. This problem can be overcome
by selecting Hall switches with higher operate and
release properties.
HEAD·ON, ALNICO 8, 0.212"0 x 0.187"
Push-Pull
Because the active area of a Hall switch is close to
the branded face of the package, it is usually operated by approaching this face with a magnetic
south pole: It is also possible to operate a Hall
switch by applying a magnetic north pole to the
back side of the package. While a north pole alone
is seldom used, the push-pull configuration (simultaneous application of a south pole to the branded
side and a north pole to the back side) can give
much greater field strengths than are possible with
any single magnet (Figure 43). Perhaps more important, push-pull arrangements are quite insensitive to lateral motion and are worth considering if a
loosely fitting mechanism is involved.
,
1000
BOD
OPERATING MODE ENHANCEMENTS
-COMPOUND MAGNETS
_\
TEAG
-8~f
\G/MIL
6DD
\
4DD
2DD
o
o
~
........
0.1
I'--
0.2
i-0.4
0.3
0 ••
TOTAL EFFECTIVE AIR GAP (INCHES)
Dwg. No 13,144
Figure 41
SLIDE-BY, ALNICO 8, 0.212"0
SYMBOL
.
TEAG
0
0.050'
0.065"
6·
0
0.080'
0.095'
1000
BOO
-~
-..,
600
400
200
o
x 0.187"
SLOPE IGiMIU
6 ••
4.7
3.4
2 ••
TEA G
~\
~
~
~
0.05
0.10
0.15
0"
'6",
0.20
B
Dwg. No. 13,145 . .
Figure 43
~~
o
SLIDE-BY
PUSH-PULL
0.25
DISTANCE 0, MAGNET (INCHES)
TO PACKAGE,CENTERLINES
Dwg. No. 13,143
Figure 42
7-23
APPLICATIONS GUIDE
Figure 44 shows the flux density curve tor an
actual push-pull slide-by configuration that
achieves a magnetic slope of about 8 G/mil.
the device normally ON until a north pole providing a stronger field in the opposite direction approached the opposite face. (Figure 47)
PUSH-PULL SLIDE-BY, ALNICO 8, 212"0 x 0.187"
•••• r-----y----,----,------,r----,
PUSH-PUSH HEAD-ON ALNICO 8 D 212"0 x D 187"
5 ••
0
1600
c
!;!
>
Iii
r--
~
iii
1200
..
,
ill
"><
~
V'"
80.
-100
0
iiiz
",.
C
/
40.
-300
/
0
0.25
0
-500
-0.06
DISTANCE D (INCHES)
Dwg No. 13,146
V
~if~
j.".5L/ /
3 ••
-0.04
V
8.44 G/MIL
/
-0.02
0.02
MAGNET ASSEMBLY TRAVEL (INCHES)
0.04
0.06
Dwg. No. 13,148
Figure 44
Figure 46
Push-Push
Another possibility, a bipolar field with a fairly
steep slope (which is also linear), can be created by
using a push-push configuration in the head-on
mode (Figure 45)
In the push-push mode, head-on configuration
as shown in Figure 45, the magnetic fields cancel
each other when the mechanism is centered, giving
zero flux density at that position. Figure 46 shows
the flux density plot of such a configuration. The
curve is linear and moderately steep at better than
8 G/mil. The mechanism is fairly insensitive to
lateral motion.
HEAD-ON
Dwg No 13,149
SLIDE-BY
Figure 47
Figure 45
Biased Operation
It is also possible to bias the Hall switch by placing a stationary north or south pole behind it to
alter the operate and release points. For example, a
north pole attached to the reverse face would turn
7-24
APPLICATIONS GUIDE
Figures 48-51 demonstrate four additional slideby techniques. Compound magnets are used in
push-pull, slide-by, edgewise configurations to
achieve a magnetc slope of 17.4 G/mil. Rare earth
magnets may be used to obtain substantially
steeper slopes. A flux density curve of up to 100
G/mil is obtainable.
EDGEWISE SLlDE.BY ALNICO 8 0212"0 x 0 187"
PUSH·PULL, EDGEWISE SLlDE·BY, ALNICO 8, 0.212"0 x 0.187"
1000
500
.l,G.
-
0.1425'
----0.10
D
~
tl: "!l
-500
-1000
1000
I
+V·4GIMIL
V
/'
I--
'D'
II \ ~
//
V
-0.08
.. ~
"0.044' t..:F
,...
500
'"1\ ;
8.7SGJMIL
-500
-0.04
0,04
0.08
-laO 0
-0.6
0.10
'-'
-0.4
-0.2
0
DISTANCE 0 !INCHES)
0.2
0.4
0.'
DISTANCE 0 (INCHES)
Dwg. No. 13,151
Dwg No. 13,150
Figure 48
Figure 49
ALNICO 8, 0.212"0 x 0.187"
PUSH·PULL SLIDE·BY, COMPOUND MAGNETS
SLIDE·BY COMPOUND, ALNICO 8, 0.212"0 x 0.187"
1000 . - - - . - -......- - - . - - -...-----1--,-'
mG1.1 ~ I ~ I ~
T~D ~
1000.-----------,----,----,---,
I
50'
500 1-_ _+---+---+_+-\----1'.'44.
200~--_r---r---~-~-+_--_+--~
-200~--~---+_~~~---+_--_+--~
-so,I--_+-+-hf--_+--++--cf--j----J
-.O,f----+~~-t_---+---t_--_+--__1
-1000 ' - _ - ' -_ _ _" -_ _-'-_ _--,"-_ _- "_ _- - '
-0.6
-0.4
-0.2
0.2
0.4
0.6
-0.04
DISTANCE 0 IINCHES)
-0.02
0.02
0.04
0.06
DISTANCE 0 IINCHES)
Dwg. No. 13,153
Owg. No. 13,152
Figure 50
Figure 51
7-25
APPLICATIONS GUIDE
INCREASING FLUX DENSITY
BY IMPROVING
THE MAGNETIC CIRCUIT
Flux Concentrators
Flux concentrators are low carbon (cold-rolled)
steel magnetic conductors. They are used to provide a low reluctance path from a magnet's south
pole, through the Hall sensor, and back to the north
pole. Flux concentrators can take many forms and
will often allow use of smaller or less expensive
magnets (or less expensive, less sensitive Hall devices) in applications where small size or economy
are important. They are of value whenever it is necessary or desirable to increase flux density at the
Hall device. Increases of up to lOO'k are possible.
An example of the effectiveness of a concentrator
is illustrated in Figures 54(A) and 54(B).
(A) The south pole of a samarium cobalt magnet
0.25" square and 0.125" long, is spaced 0.25"
from the Hall switch. There is a flux density of
187 G at the active area.
(B) With a concentrator 0.125" in diameter and 0.5"
long, the flux density increases to 291 G.
Magnetic flux can travel through air, plastic, and
most other materials only with great difficulty.
Since there is no incentive for flux from the activating magnet to flow through the (plastic and silicon)
Hall device, only a portion of it actually does. The
balance flows around the device and back to the
other pole by whatever path offers the least resistance. (Figure 52)
Dwg. No. 13,154
Figure 52
B=291G
B=187G
However, magnetic flux easily flows through a
ferromagnetic material such as mild steel. The reluctance of air is greater by a factor of several thousand than that of mild steel.
In a Hall device application, the goal is to minimize the reluctance of the flux path from the magnetic south pole, through the Hall device, and back
to the north pole. The best possible magnetic circuit
for a Hall device would provide a ferrous path for
the flux, as shown in Figure 53, with the only "air
gap" being the Hall device itself.
(B)
Dwg No. 13,156
Figure 54
Size of the Concentrator
The active area of the Hall device is typically 0.01"
square. Best results are obtained by tapering the
end of the concentrator to approximately the same
dimensions. With the "U" package, however,
there is 0.044" from the active area to the rear surface of the package. Due to this 0.044" distance, a
slightly larger end to the concentrator results in
higher values of flux density at the active area. If
the end is too large, the flux is insufficiently concentrated. Figure 55(A), (B), and (C) illustrates
these effects using cylindrical flux concentrators
and a 0.25" gap.
The length of the concentrator also has an effect
on the flux density. This is illustrated in Figure 56.
Cylindrical concentrators were used here for convenience, but the body of the concentrator has little
effect. The important factors are the shape, position, and surface area of the magnet end nearest
the Hall sensor.
MILD STEEL
Owg. No. 13,155
Figure 53
While a complete ferrous flux path is usually impractical, unnecessary, and even impossible in applications requiring an undistorted or undisturbed
flux field, it is a useful concept that points the way
to a number of very practical compromises for improving flux density.
7-26
APPLICATIONS GUIDE
B=269 G
B=261 G
0.2S·O, O.S··L
-++-+--1}-
0.2S"O, O.S·L
(TOO LARGE)
TAPERED
TO 0.02"
ITOO SMALL)
IB)
B=291 G
Dwg. No 13,157
0.12S·O,O.S·L
-/----~~ s[}
~
.........
Ie)
Figure 55
The effectiveness of other concentrator configurations can be measured easily by using a calibrated
linear Hall device, such as the Sprague UGN3503U, or a commercial gaussmeter.
cations, the mesa will give a significant increase in
flux density over a flat mounting surface.
Attractive Force and Distorted Flux Field
Whenever a flux concentrator is used, an attractive force exists between magnet and concentrator.
That may be undesirable.
Feed-Throughs
An example of the use of a magnetic conductor
to feed flux through a nonferrous housing is shown
in Figure 59. A small electric motor has a 0.125"
cube samarium cobalt magnet mounted in the end
of its rotor, as shown. A 0.125" cube ferrous conductor extends through the alloy case with a 0.031"
air gap between it and the magnet's south pole. The
Hall switch is mounted at the other end with a flux
concentrator behind it.
Mounting the Magnet To a Ferrous Plate
Mounting the magnet to a ferrous plate will give
an additional increase in flux density at the Hall
element. Using the same configuration as in Figure
55(C), which produced 291 G, note the available
flux attained in Figure 57(A) and (B) with the addition of the ferrous plate.
Figure 58 shows a possible concentrator for a ring
magnet application. Using a flux concentrator that
extends to both of the adjacent north poles, flux
density increases from 265 G to 400 G (0.015" air
gap). Note that the concentrator has a dimple, or
mesa, centered on the Hall device. In most appli-
tt
~-' 9 ,. , '" ",eo """
8=357 G
SAMARIUM C08ALT,O.125"D,O.25"GAP
400r------------,-------------,
~
iii
)iii
200
8=389 G
z
UJ
c
I" SQUARE
><
:::l
10.032" MILD STEEl)
..J
LL
o
0.5
1.0
CONCENTRATOR LENGTH liii
z
w
0
)(
200
::l
..J
II.
U
i=
w
Z
<-'
0(
:;;
100
o~------~-------L------~------~L-------J
o
0.125
0.250
0.375
CONDUCTOR LENGTH, L (INCHES)
Figure 60
7-28
0.500
0.625
Dwg. No. 13,162
APPLICATIONS GUIDE
Maximum Ellergy Product (BH",.,,) in gauss-oersteds times 10-". A strong magnet that is also very
resistant to demagnetizing forces has a high Maximum Energy Product. Generally, the larger the energy product, the better, stronger, and more
expensive the magnet.
Temperature Coefficiellt in percent per degree Celsius: How much will the strength of the magnet
change as temperature changes?
metal, such as samarium, with cobalt (abbreviated
RE cobalt). These magnets are the best in all categories, but are also the most expensive by about the
same margins. Too hard for machining, they must
be ground if shaping is necessary. Maximum energy product, perhaps the best single measure of
magnet quality, is approximately 16 x 10".
Alllico is a class of alloys containing aluminum,
nickel, cobalt, iron, and additives that can be varied
to give a wide range of properties. These magnets
are strong and fairly expensive, but less so than RE
cobalt. Alnico magnets can be cast, or sintered by
pressing metal powders in a die and heating them.
Sintered Alnico is well suited to mass production of
small, intricately shaped magnets. It has more uniform flux density, and is mechanically superior.
Cast Alnico magnets are generally somewhat
stronger. The non-oriented or isotropic Alnico alloys (1, 2, 3, 4) are less expensive and magnetically
weaker than the oriented alloys (5, 6, 5-7, 8, 9).
Alnico is too hard and brittle to be shaped except
by grinding. Maximum energy product ranges
from 1.3 x 10" to 10 X 10".
Ceramic magnets contain barium or strontium ferrite (or another element from that group) in a matrix
of ceramic material that is compacted and sintered.
They are poor conductors of heat and electricity,
Magnetic Materials
Neodymium (Ne-Fe B)-The new neodymiumiron-boron alloys fill the need for a high maximumenergy product, moderately priced magnet material. The magnets are produced by either a powdered-metal technique called orient-press-sinter or
a new process incorporating jet casting and conventional forming techniques. Current work is
being directed toward reducing production costs,
increasing operating temperature ranges and decreasing temperature coefficients. Problems relating to oxidation of the material can be overcome
through the use of modern coatings technology.
Maximum energy products range from 7.0 to 15.0
MGOe depending on the process used to produce
the material.
Rare Earth-Cobalt is an alloy of a rare earth
TABLE 4
Properties of Magnetic Materials
Material
R.E. Cobalt
Maximum Energy
Product
(Gauss-Oersted)
16 x 10'
Residual
Induction
(Gauss)
8.1
Alnico 1, 2, 3, 4
1.3-1.7 x 10"
Alnico,S, 6, 5-7
4.0-7.5 x 10"
Alnico 8
5.0-6.0 x 10'
Alnico 9
10 x 10'
10.5
Ceramic 1
1.0 x 10'
2.2
10'
X
5.5-7.5 x 10'
Coercive Force
(Oersteds)
7.9 x 10'
0.42-0.72
X
X
X
10'
1.6 x 10'
10'
1.8
X
10'
Comments
Highest
Medium
Non-oriented
-0.03%
MediumHigh
Oriented
-O.Ol%I"C to
+0.01 %IOC
MediumHigh
-0.02%IOC
High
Oriented,
highest energy product.
Low
Non-oriented,
high coercive force, hard,
brittle, non-conductor
-0.05%I"C
1.5-1. 9 x 10'
Cost
Strongest, smallest, resists
demagnetizating best
-0.02%IOC to
10' -0.03%I"C
-0.02%IOC to
10.5-13.5 x 10' 0.64-0.78 x 10'
7-9.2 x 10'
Temperature
Coefficient
-0.2%IOC
Oriented,
high coercive force, best
temperature coefficient.
Ceramic 2, 3, 4, 6
1.8-2.6 x 10"
2.9-3.3 x 10'
2.3-2.8
X
10'
-0.2%I"C
LowMedium
Partially oriented,
very high coercive force,
hard, brittle, non-conductor
Ceramic 5, 7, 8
2.8-3.5 x 10'
3.5-3.8
2.5-3.3
X
10'
-0.2%I"C
Medium
Fully oriented,
very high coercive force,
hard, brittle, non-conductor
X
10'
Cunife
1.4 x 10'
5.5 x 10'
0.53
X
10'
-
Medium
Ductile, can cold form and
machine
Fe-Cr
5.25 x 10'
13.5
X
10'
0.60
X
10'
-
MediumHigh
Can machine prior to final
aging treatment
Plastic
0.2-1.2 x 10'
1.4.3
X
10'
0.45-1.4
-0.2%I"C
Lowest
Can be molded, stamped,
machined
Rubber
0.35-1.1 x 10'
1.3-2.3
-0.2%I"C
Lowest
Flexible
-.157%I"C to
- .192/°C
MediumHigh
Non-oriented
Neodymium
7-15 x 10"
X
10'
6.4-11.75 x 10'
X
10'
1-1.8 x HP
5.3-6.5 x 10'
7-29
APPLICATIONS GUIDE
are chemically inert, and have high values of coercive force. As with Alnico, ceramic magnets can be
fabricated with partial or complete orientation for
additional magnetic strength. Less expensive than
Alnico, they also are too hard and brittle to shape
except by grinding. Maximum energy product
ranges from 1 x 10" to 3.5 X 10".
Ctl1life is a ductile copper base alloy with nickel
and iron. It can be stamped, swaged, drawn, or
rolled into final shape. Maximum energy product
is approximately 1.4 x 10".
Iroll-Chromium magnets have magnetic properties similar to Alnico 5, but are soft enough to
undergo machining operations before the final
aging treatment hardens them. Maximum energy
product is approximately 5.25 x 10".
Plastic alld rubber magnets consist of barium or
strontium ferrite in a plastic matrix material. They
are very inexpensive and can be formed in numerous ways including stamping, molding, and machining, depending upon the particular matrix
material. Since the rubber used is synthetic, and
synthetic rubber is also plastic, the distinction between the two materials is imprecise. In common
practice, if a plastic magnet is flexible, it is called a
rubber magnet. Maximum energy product ranges
from 0.2 x 10" to 1.2 x 10".
CURRENT LIMITING
AND MEASURING
Current Sensors
Hall Effect devices are excellent current-limiting
or measuring sensors. Their response ranges from
dc to the kHz region. The conductor need not be
interrupted in high-current applications.
The magnetic field about a conductor is normally
not intense enough to operate a Hall effect device
(Figure 61).
B (GAUSS) ::;
I (AMPS)
411 r (INCHES)
Owg. No. 13,163
Figure 61
The radius, r, is measured from the center of the
conductor to the active area of the Hall device. With
a radius of 0.5" and a current of 1,000 A, there
would be a magnetic flux density of 159 G at the
Hall device. At lower current, use a toroid or closed
magnetic circuit to increase the flux density, as illustrated in Figure 62(A) and (B).
Choosing Magnet Strength
A magnet must have sufficient flux density to
reach the Hall switch maximum operate point specification at the required air gap. Good design practice suggests the addition of another 50 G to 100 G
for insurance and a check for sufficient flux at the
expected temperature extremes.
The data sheet on the Sprague UGN-3020U Hall
switch specifies a 350 G maximum operate point at
+ 25°C. After adding a pad of 100 G, we have 450 G
at + 25°C. If operation to + 70°C is needed, the requirement is 450 G + 45 G = 495 G. (For calculations, we use ±0.7°C operate point coefficient and
± 1.0rC release pOint coefficient.) Since the temperature coefficient of most magnets is negative,
this factor would also require some extra flux at
room temperature to guarantee high-temperature
operation.
Coercive Force
Coercive force becomes important if the operating environment will subject the magnet to a strong
demagnetizing field, such as that encountered near
the rotor of an ac motor. For such applications a
permanent magnet with high coercive force (ceramic, Alnico 8, or, best of all, RE cobalt) is clearly
indicated.
Price and Peak Energy Product
The common permanent magnet materials
and their magnetic properties are summarized in
Table 4. The cost column shows the relationship
between the price paid for a magnet and its peak
energy product.
Dwg No 13,164
12 3
Figure 62(A)
B :::::: 6 G/A
Dwg No 13,165
Figure 62(8)
7-30
APPLICATIONS GUIDE
With an 0.08" air gap for the "T" or "M" packages, there would be 6G/A per turn for Figure
62(A), and 6G/A for Figure 62(8).
The core material can be of either ferrite or mild
steel (C-lOlO) for low-frequency applications, and
ferrite for high-frequency measurements.
The main concerns are:
- That the core retains minimal field when the
current is reduced to zero.
-That the flux density in the air gap is a linear
function of the current.
-And that the air gap is stable over the operatin~ temperature range.
The cross-sectional dimensions of the core are at
least twice the air gap dimension to ensure a reasonably homogeneous field in the gap. For example, a toroid with an 0.08" gap would have at least a
0.16" x 0.16" cross-section.
Another simple and inexpensive application is
illustrated in Figure 63. A toroid of the appropriate
diameter is formed from mild steel stock, 0.0625"
thick and 0.1875" wide. The ends are formed to fit
on each side of the central portion of the Hall device. One advantage of this technique is that the
toroid can be placed around a conductor without
disconnecting the conductor.
Multi-Turn Applications
There are several considerations in selecting the
number of turns for a toroid such as the one in
Figure 62(A):
Hall Switches
Keep the flux density in the 200 G to 300 Grange
for a trip point. Sprague can supply parts with a
narrow distribution of magnetic parameters within
this range. If, for example, you want the Hall
switch to turn ON at 10 A:
300 G
N 6 G/A x 10 A = 5 turns
It is possible to supply parts having a ± 20%
operating point window in this range. (Contact
Sprague Customer Service, Concord, New Hampshire 603/224-1961.)
Hall Lillears
It is desirable to have flux density in the 200 G to
300 G range to maximize the output signal/zero
drift ratio. In using the Sprague UGN-3501LJ, for
example, the zero drift is typically 0.15mV;oC,
so from O°C to + 70°C there would be typically a
±7mV zero drift. A sensitivity of 1.4mV/G and
a 300 G field would give a 420 m V output signal.
HALL SWITCH
rr===e~-
HALL DEVICE
COIL
TOROID
Dwg. No. 13,166
Dwg. No. 13,167
Figure 63
Figure 64
TABLES
Characteristics of Hall Effect Linear Devices
Sprague
Type
Package
Description
Operating
Temperature
Range>
Supply Voltage
Supply Current
Min.
(V)
Max.
(V)
Typ.
(rnA)
Max.
(rnA)
3501
LI
Differential
Output,
Emitter
Follower
3501
HH,LT,LL,T,U
Single Output,
Emitter
Follower
UGN
8.0
3503
HH,LT,LL,T,U
Single Output,
Emitter
Follower
UGN
UGS
4.5
6.0
9.0
3605
K
Differential
Output
UGN
-
5.0t
-
Quiescent Output
Min.
(V)
Max.
(V)
Typ.
Sensitivity
(mV/G)
UGN
8.0
16
10
18
-
0.4
1.3
12
10
20
2.5
5.0
0.7
14
2.25
2.75
1.3
'UGN = - 20°C to + 8S'C.
UGS = -40'C to + 125'C.
tTypical value.
§Increases as I" increases.
7-31
5.0t
-
-
0.4§
APPLICATIONS GUIDE
The Type 3501LI also has a -0.3%;oC sensitivity
coefficient. For example, a 420 m V output signal at
O°C would drop to 330 m Vat + 70°C.
The sensitivity of Type 3501LI can be calibrated
by adding matched resistors to each leg of the zero
control. They give an added bonus of a reduced
sensitivity coefficient of about - 0.15%;oC as they
approach 50 n values.
For low-current applications in which many
turns are required, one can wind a bobbin, slip it
over a core, and complete the magnetic circuit
through the Hall device with a bracket-shaped pole
piece, as shown in Figure 64.
With this bobbin-bracket configuration it is possible to measure currents in the low milliampere
range or to replace a relay using a Hall switch. To
activate a Hall switch at 10 mA (± 20%), using a
device with a 200 G (± 40 G) operate point, bobbin
windings require:
200 G
N = 6 G/A x 0.01 A = 3333 turns
Each Hall Effect integrated circuit includes a Hall
sensing element, linear amplifier, and emitterfollower output stage. Problems associated with
handling tiny analog signals are minimized by having the Hall cell and amplifier on a single chip.
The output null voltage ofType 3503 is nominally
one-half the supply voltage. A south magnetic pole
presented to the branded face of the Hall effect sensor will drive the output higher than the null voltage level. A north magnetic pole will drive the
output below the null level.
In operation, instantaneous and proportional
output-voltage levels are dependent on magnetic
flux density at the most sensitive area of the device.
Greatest sensitivity is obtained with a supply voltage of 6 V, but at the cost of increased supply current and a slight loss of output symmetry. The
sensor's output is usually capacitively coupled to
an amplifier that boosts the output above the millivolt level.
In the two applications shown in Figures 66 and
67, permanent bias magnets are attached with
epoxy glue to the back of the epoxy packages. The
presence of ferrous material at the face of the package then acts as a flux concentrator.
The south pole of a magnet is attached to the back
of the package if the Hall Effect IC is to sense the
presence of ferrous material. The north pole of a
magnet is attached to the back surface if the integrated circuit is to sense the absence of ferrous
material.
Calibrated linear Hall devices, which can be used
to determine the actual flux density presented to
the Type 3503 sensor in a particular application, are
available from the Sensor Division, Sprague Electric Company, Concord, NH 03301.
It would be practical to tweak the air gap for final,
more precise calibration. In all cases, be ca refll I 1101 10
slress tile package.
Other Applications For Linear Sensors
Electrical and magnetic characteristics of Sprague
linear Hall Effect ICs are shown in Table 5.
Type UGN-3503U and UGS-3503U Hall Effect linear sensors are used primarily to sense relatively
small changes in magnetic field-changes too small
to operate a Hall Effect switching device. They are
customarily capacitively coupled to an amplifier,
which boosts the output to a higher level.
As motion detectors, gear tooth sensors, and
proximity detectors (Figure 65), they are magnetically driven mirrors of mechanical events. As
sensitive monitors of electromagnets, they
can effectively measure a system's performance
with negligible system loading while providing isolation from contaminated and electrically noisy
environments.
NOTCH SENSOR
MAGNET
+V
UGN-350~U
5
":"
GEAR TOOTH SENSOR
LOAD
1~F
!-.-'IN.-.r.:-...
+5V
10K
Dwg. No 13,169
Figure 66
+V
MAGNET
UGN-350~U
N
LOAD
22,.F
2.2K
!-....J\JI,~.
+5V
":"
10K
Dwg No 13.168
Dwg No 13.170
Figure 65
Figure 67
7-32
APPLICATIONS GUIDE
Ferrous Metal Detectors
Two similar detector designs are illustrated in
Figures 68 and 69. The first senses the presence of
a ferrous metal; the other senses an absence of the
metal. The two sensing modes are accomplished
simply by reversing the magnet poles relative to the
Sprague UGN-350lT. The pole of the magnet is affixed to the unbranded side of the UGN-350lT in
both cases.
Frequency response characteristics of this circuit
are easily controlled by changing the value of the
input decoupling capacitor for the low-frequency
break-point. If high-frequency attenuation is desired, a capacitor can be used to shunt the feedback
resistor.
Metal Sensor
The north pole of the magnet is affixed to the
back side of a UGN-350lT. The sensor is in contact
with the botton! of a 0.09375" epoxy board. A 20 m V
output change (decrease) is produced as a 1" steel
ball rolls over the sensor. This signal is amplified
and inverted by the /LA 741C operational amplifier
and drives the 2N8512 ON.
Printer Application
The device in Figure 70 senses lobes on a character drum. Lobes are spaces 0.1875" apart around the
circumference, are 0.25" long and rise 10 to 15 mils
from the surface of the drum.
13=
o
J\
U
MAGNET
Dwg No. 13,173
Figure 70
A UGN-3501 T Hall Effect linear IC sensor is used
with an Indiana General Magnet Products Company SR8522 magnet. The north pole is affixed to
the reverse side of the "T" pack. A flux concentrator is affixed to the branded face of the "T" pack.
Though it does not provide a flux return path, a
concentrator will focus the magnetic field through
the switch.
The concentrator blade, shown in Figure 71, is
aligned with the drum lobe at an air gap distance of
0.01". The output change is 10 mV peak, amplified
as shown to develop a + 3 V output from the operational amplifier, driving the transistor ON, as illustrated in Figure 72.
Sensitivity is so great in this configuration that
the UGN-350lT output signal's baseline quite
closely tracks eccentricities in the drum. This affects
lobe resolution, but lobe position can still be
measured.
MAGNET
470K
UGN_3S$'T
S
22fJF
I-~Mr~
+12V
-=
10K
+ fJA741C
or-v'vv-...,..,..
12K
Figure 68
FLUX
CONCENTRATOR
UGN-3501T
Owg No. 13,171
Notch Sensor
The south pole of the magnet is fixed to the backside of a UGN-350lT. The sensor is 0.03125" from
the edge of a steel rotor. A 0.0625" wide by 0.125"
deep slot in the rotor edge passing the sensor
causes a 10 mV peak output change (decrease). This
signal is amplified and inverted by the /LA 741C op
amp and drives the 2N5812 ON.
Note that, in both examples, the branded side of
the UGN-350lT faces the material (or lack of material) to be sensed. In both cases, the presence (or
absence) of the ferrous metal changes the flux density at the Hall Effect sensor so as to produce a
negative going output pulse. The pulse is inverted
by the amplifier to drive the transistor ON.
n
11°.
031 "
6-=X",,·
..
MAGNET
UGN_3S~1T
o~
470K
N
+12V
LOAD
1f'F
l--oJV\~~
-=
r
10K
0.062"
Dwg No 13,174
Figure 69
Dwg No 13,172
Figure 71
7-33
APPLICATIONS GUIDE
1M
UGN-3501T
+
A 4.3 n resistor is connected from each output
pin to ground. The quiescent bias current of the
output stage is increased, and the sinking capability is increased to 1 rnA.
If higher current-drive capability is required, the
simplest solution is the addition of a pair of emitterfollowers, shown in Figure 75.
+15V
Dwg. No 13,157
~1mA
MAX.
Figure 72
Differential Output Device
The Type UGN-3501LI is well-suited to accurate
measurement and control of position, weight,
thickness, velocity, and current. The device provides a linear differential output that is a function
of magnetic field intensity, with a typical sensitivity
of 1.4 VIlOOO G.
Either magnetic pole can be used. Pins 1 and 8
are current-sinking and sourcing terminals for the
differential output. Changing poles inverts the output. Connections may be reversed to account for
this change.
Figure 73 shows a 20 n potentiometer used to
establish an output offset null. Pins 5, 6 and 7 can
be shorted if an output offset voltage of up to
± 400 m V can be tolerated.
Figure 74
82n
O.SmA MAX.
MAGNET
sl
Figure 75
Up to 30 rnA of load current can be sourced by
the circuit as shown. This can be increased considerably by using Darlington power transistors and
lower resistance in the emitter circuits. Note that
the emitter-followers have no voltage gain. The
output-voltage differential is essentially the same
as that of the UGN-3501Ll.
An operational amplifier will supply a voltage
gain and a current gain, and transform the differential output of the UGN-3501LI to a single-ended
output, as illustrated in Figure 76. (The circuit will
drive a load that has one side grounded.)
O.SmA MAX.
Dwg No 13.176A
Figure 73
UGN-3501LI Output Design
The output-current capability of the UGN-3501LI
is 0.5 rnA. In the differential connection, one output pin sources load current, the other must sink it.
A simple method for increasing drive capability is
illustrated in Figure 74.
7-34
GLOSSARY
UGN-3501LI does swing negative when a magnetic
south pole approaches the device surface. Pin 1,
therefore, is connected to the negative or inverting
input of the LM324, and its output swings in the
positive direction. Reversing connections to Pins 1
and 8 allows the output to respond to a magnetic
north pole. If the application requires the output be
capable of swing both negative and positive, then a
dual power supply would most be used.
It
Vo Itage amp I1'f"lcahon "" R,
with
Dwg No 13,179A
RJ = R,
R, = R.
The LM324 can source 40 mAo Other operational
amplifiers suitable for single supply operations are
MC3403P, MC3458Pl, and CA3160E.
Figure 76
The LM324 quad operational amplifier will operate from a single power supply if the output does
not swing in the negative direction. Pin 1 of the
GLOSSARY
Active Area-The site of the Hall element on the
encapsulated IC chip.
Air Gap-The distance from the face of the magnetic pole to the face of the sensor.
Ampere-turn (NI)- The mks unit of magnetomotive
force.
Ampere-thYlls/meter (NlIm)- The mks unit of magnetizing force. One ampere turn per meter equals
79.6 oersteds.
Bipolar-A method of operating a Hall sensor using
both north and south magnetic poles.
Coercive Force (H)-The demagnetizing force that
must be applied to reduce the magnetic flux density in a magnetic material to zero. Measured in
oersteds.
COllcelltrator-Any ferrous metal used to attract
magnetic lines of force.
Gauss (G)-The CGS unit of magnetic flux density.
Equivalent to one maxwell per square centimeter
(Mx/cm'). One gauss equals 10-· tesla.
Gilbert-The CGS unit of magnetomotive force.
Head-Oll-A method by which the Hall sensor is
actuated. The magnetic field is increased and decreased by moving the magnetic pole toward and
away from the' sensor face.
Maximum Ellergy Product (BH",,,)- The highest
product of Band H from the demagnetization curve
of a magnetic material. Given in gauss-oersteds x
106 (MGOe).
Maxwell (Mx)- The CGS unit of total magnetic flux.
One maxwell equals 10-" webers.
Oersteds (Oe)- The CGS unit of magnetizing force.
Equivalent to gilberts per centimeter (Gilberts/cm).
One oersted equals 125.7 ampere-turns per meter.
Remallent Inductioll (B.,)- The magnetic induction
that remains in a magnetic circuit after removal of
an applied magnetomotive force. When there is
no air gap in the magnetic circuit, remanent and
residual induction are equal. With an air gap,
remanence will be less than residual induction.
Measured in gauss.
Residual Induction (B,)-The flux density remaining
in a closed magnetic circuit of magnetic material
when the magnetizing force adequate to saturate
the material is reduced to zero. Measured in gauss.
Slide-blf-A method which a Hall sensor is actuated'. The magnetic field is increased and decreased as a permanent magnet is moved laterally
past the sensor face.
Tesla (T)- The mks unit of magnetic flux density.
Equivalent to one weber per square meter (Wb/m').
One tesla equals 10· gauss.
Toroid-A doughnut-shaped ring often composed
of iron, steel or ferrite.
Total Effective Air Gap (TEAG)- The distance from
the face of a magnetic pole to the active area of a
Hall Effect sensor.
Ullipolar-A method of operating a Hall sensor
using a single magnetic pole, usually the south
pole.
Valle-Any ferrous metal used to shunt a magnetic
field away from the Hall sensor (at least 1.5 times
the width of an associated magnet).
Willdow-An opening in a vane at least 1.5 times
the width of an associated magnet.
7-35
D
APPLICATIONS GUIDE
SOURCES FOR FERRITE TOROIDS
AND MAGNETS
As a convenience, some sources for ferrite toroids
and magnets are listed below. Addresses and telephone numbers are correct to the best of our knowledge at time of printing.
TOROID SUPPLIERS
Fair-Rite Products Corp.
P.O. BoxJ
Wallkill, NY 12589-0288
914/895-2055
Magnetics
900 East Butler Road
P.O. Box 391
Butler, PA 16001
412/282-8282
J.W. Miller Co.
Div. of Bell Industries
19070 Reyes Avenue
P.O. Box 5825
Rancho Dominguez, CA
90224
213/537-5200
MAGNET SUPPLIERS
Types
Arnold Engineering
P.O. BoxG
Marengo, IL 60152
815/568-2000
Alnico, Ceramic,
Multipole Ring
Bunting Magnetics
Company
1165 Howard St.
Elk Grove Village, IL
60007
312/593-2060
Alnico, Ceramic, Plastic
Ceramic Magnetics, Inc.
87 Fairfield Road
Fairfield, NJ 07006
201/227-4222
Ceramic, Multipole Ring
Crucible Magnetics
101 Magnet Dr.
Elizabethtown, NJ 42701
502/769-1333
Alnico, Rare Earth
Hitachi Magnetics
7800 Neff Road
Edmore, MI 48829
517/427-5151
Alnico, Ceramic, Rare
Earth
IG Technolog
405 Elm Street
Valparaiso, IN 46383
219/462-3131
Alnico, Ceramic,
Multipole Ring, Rare
Earth
Ogallala Electronics
P.O. Box 59
Ogallala, NE 69153
308/284-4093
Permag Northeast Corp.
10 Fortune Drive
Billerica, MA 01865
617/663-7500
Stackpole Corporation
201 Stackpole Street
St. Marys, P A 15857
814/781-1234
Stackpole Corporation
700 Elk Ave.
Kane, PA 16735
814/837-7000
Ceramic
TDK Electronics Co., Ltd.
14-22-Chome
Uchikanda, Choyoda Ku
Tokyo, Japan
Rare Earth
The Electrodyne
Company
4188 Taylor Road
Batavia, OH 45103
513/732-2822
Plastic
Xolox Corporation
6932 Gettysburg Pike
Ft. Wayne, IN 46804
219/432-0661
Plastic, Multipole Ring
3-M Plastiform
3-MCenter
Industrial Electric
Products Div.
Building 225-4N
St. Paul, MN 55144
Attn: Dorothy Landucci
612/733-8216
Plastic
Ceramic,
Multipole Ring
Industrial Magnetics, Inc.
32 West Boyne Road
Boyne City, MI 49712
616/582-3100
Alnico, Barium Ferrite,
Ceramic, Flexible
Vinyl, Rare Earth
Permag Corporation
400 Karin Lane
Hicksville, NY 11801
516/822-3311
Representatives of
various manufacturers.
Permag also does
custom grinding.
Neodymium
Recoma, Inc.
2 Stewart Place
Fairfield, NJ 07006
201/575-6970
Rare Earth
Magnaquench
Div. of Gen. Motors
6435 S. Scatterfield Rd.
Anderson, IN 46011
317/646-2763
7-36
APPLICATIONS GUIDE
USING CALIBRATED DEVICES
UGN-3503U
The Sprague calibrated Type 3503 is an accurate,
easy-to-use tool for measuring magnetic flux densities. Each device is individually calibrated and furnished with a calibration curve and sensitivity coefficient. Although calibration is performed in a south
and north 500 G field, the UGN-3503 is useful for
measuring fields in both polarities to 1000 G.
A closely regulated 5 V (± 10mV) power supply
is necessary to preserve accuracy in calibrated
UGN-3503 flux measurements. An ambient
temperature range of 21°C to 25°C must also be
maintained.
Connect Pin 1 to voltage Vcc, Pin 2 to ground, and
Pin 3 to a high-impedance voltmeter. Before use, the
device should be powered-up and allowed to
stabilize for one minute.
The calibration curve affords the most convenient
method of flux measurement. Subject the device to
the field in question. Read the output voltage from
the voltmeter and find that value on the chart X axis.
Locate the intersection of the output level with the
calibration trace and read the corresponding flux
density on the chart's Y axis.
The sensitivity coefficient can be used to calculate
flux densities somewhat more precisely. First, determine the null output voltage of the device under 0 G
or null field condition. Then, read the output of the
device under an applied field condition by subject-
ing it to the flux in question. Magnetic flux density
at the device may be calculated by:
B = f',. VOUT(B) - VOUT(O)' 1000/S
where f',. VOUT(B) = Output voltage under applied
field in volts.
VOUT(O)
= Output null voltage in volts.
= Sensitivity coefficient in
S
mY/G.
B
= Magnetic flux density at the
device in gauss.
UGN-3604U
The most basic Sprague Hall Effect magnetic field
sensor is the UGN-3604U. The differential output
of the device is a function of magnetic flux density
present at the sensor. Sensitivity is a function of the
control current; sensitivity increases as the control
current increases.
The UGN-3604 is frequently used for measurement of flux density, either in Hall applications as
a design aid, or in Hall Effect device test equipment. The UGN-3604 is supplied with a calibration
chart.
Each UGN-3604 Hall Effect sensor is individually
calibrated at a temperature of + 25°C using a supply-voltage of 5 V. Its calibration chart indicates differential output values for a magnetic flux density
ranging from 0 G to 1000 G. Sensitivity at this supply-voltage level is typically 50 m V per 1000 G.
7-37
THE HALL-EFFECT SENSOR
THE HALL-EFFECT SENSOR
Reprinted from Sensors March 1986
Copyrlght© North American Technology, Inc.
174 Concord Street Peterborough, NH 03458
TRENT WOOD, SPRAGUE ELECTRIC COMPANY
T
he basic Hall sensor is simply a
small sheet of semiconductor
material. A constant voltage source forces
a constant bias current to flow in the
semiconductor sheet. The output, a
voltage measured across the width of the
sheet, reads near zero if a magnetic field
is not present (Figure I).
If the biased Hall sensor is placed in a
magnetic field oriented at right angles to
the Hall current, the voltage output is in
direct proportion to the strength of the
magnetic field. This is the Hall effect,
discovered by E.H. Hall in 1879 (Figure 2).
The basic Hall sensor is essentially a
transducer that will respond with an out·
put voltage if the applied magnetic field
changes in any manner. Differences in the
response of devices are generally related
to tolerances and specifications, such as
operate (turn on) and release (turn off)
thresholds, as well as temperature range
and temperature coefficients of these
parameters. Also available are linear out·
put sensors that differ in sensitivity or reo
spond per gauss change.
A Hall sensor is activated by a magnetic
Figure J. If no magnetic field is present, the voltage field created by either electromagnets or
metlSured dcross the width of the semiconductor mdteridl
pe.rmanent magnets. Magnetic fields have
of the Hall·effect sensor is zero.
two important characteristics: magnitude
and direction (or orientation). In the
absence of any magnetic field, the most
common Hall·effect digital switches are
designed to be off (open circuit at output).
They will turn on only if subjected to a
magnetic field that has both sufficient
strength and the correct polarity.
If the approach of the South pole of a
magnet would cause switching action of
Figure 2. The output voltage of a Hall·effect sensor is a digital sensor, the approach of the North
directly proportional to the magnetic field present at right pole of a magnet would have no effect. In
angles to the directiDn of current flow through the sensor. practice, a close approach by the South
7-38
pole of a magnet will cause the output
transistor to turn on.
The transfer characteristics graph
(Figure 3) shows input vs output. The in·
put variable, which is the strength of the
activating magnetic field (magnetic flux
density, measured in gauss), is plotted
along the horizontal axis. The output
variable, which is the digital (on, off) out·
put from a Hall switch, is plotted along the
vertical axis.
In the absence of any magnetic field
(zero gauss), the Hall·effect switch is off
12 t-.::::;~=-..........,
IO.P.
o~
I'
W
I
~
~
g
~
~
o
ION
I
!I
6
OFF
t
R.P.
I
I
I
-=-II'!.
o L~::L:::::::::i=:~:::i::3-!5
o 100 200 300 400 500 600
MAGNETIC FLUX DENSITY IN GAUSS
Figure 3. The transfer characteristic graph plots input
on the horizontal axis vs output on the vertical axis. With
no magnetic field present, the Hall.effect switch is off;
as the field increases, the switch will tum on at a
predesigned operating paint. This particular device ex·
hibits hysteresis of 90 gauss.
THE HALL-EFFECT SENSOR
Rlures 01 Merit Commonly
1/J1l1tJd1O Ma!Jnetlc MJllel'lBls
.. Residual Induction (B,) in Gauss.
How strong is the magnetic field? A
magnet must have sufficient flux density to satisfy the Hall switch maximum
operating point specification at the required air gap_
.. Coercive Force (HJ in Oersteds.
How well will the magnet resist external
demagnetizing forces? This property
becomes important if the operating environment will subject the magnet to a
strong demagnetizing field, such as
might be encountered near the rotor of
and the output voltage equals the power
supply (12 V). As the strength of the
magnetic field increases, at some point
(240 gauss in this case) the output transistor will turn on and the output voltage
goes to zero. The output does not change
even if the magnetic field's strength continues to increase.
The switch stays on until the magnetic
field falls well below the 240 G operating
point. This is a circuit design characteristic
(hysteresis) that prevents oscillations. Our
example uses a 90 gauss hysteresis
(240-150), which will turn the device off
at 150 gauss.
All switches turn on at or below their
maximum operating point flux density,
and when the magnetic field is reduced,
all devices turn off before the flux density drops below their minimum release
point value. Additionally, each device has
a minimum amount (typically, 20 gauss)
hysteresis to ensure clean switching action.
This hysteresis ensures that even if
mechanical vibration or electrical noise is
present, the switch output is fast, clean,
and occurs only once per threshold
crossing.
Linear Hall-effect sensors differ from
digital Hall-effect sensors with respect to
the output response from the sensor. The
digital sensor has an off!on or high/low
output; the linear sensor has an output
proportional to the magnetic field subjected to the "active area." Hall-effect
linear sensors are used primarily to sense
relatively small changes in magnetic fields,
an A_G motor_ For such applications, a
permanent magnet with high coercive
force (ceramic, alnico-B, or, best of all,
RE cobalt) is clearly indicated.
.. Maximum Energy Product [(Bd x
H~ Max x 106J in Gauss-Oersteds. A
strong magnet that is also very resistant
to demagnetizing forces would have a
high maximum energy product. Generally, the larger the energy product, the
better, stronger, and more expensive the
magnet.
.. Temperature CoeffICient in Percent
per Degree Celsius. How much will the
strength of the magnet change as the
temperature changes?
changes too small to operate a Hall-effect
digital switch.
The exact magnetic flux density values
reqUIred to activate Hall sensors differ for
several reasons, including design criteria
and manufacturing tolerances. Extremes
in temperature also affect the response
characteristics of the sensors.
For each device type, worst-case
magnetic specifications can be set out for
the user by a Hall-effect sensor marketing
or applications engineer, if it has been
determined that a catalogue item will not
meet required tolerances.
APPLICATIONS
With an understanding of how Halleffect sensors work, it is possible to build
devices around them. The physical aspects
of their characteristics form the basis of
Hall device applications.
.. Analysis. The field created by a magnet
must be compatible with the characteristics of the Hall-effect device it is expected
to operate. Measure the strength of the
magnetic field, which is greatest at the
magnet's pole face, with a gaussmeter or
a calibrated linear Hall sensor. Then plot
a graph of field strength (magnetic flux
density) vs distance of the magnet from
the device along the intended line of travel
of the magnet. Then, by using the Hall
device specifications (sensitivity of
mV /gauss for a linear device, or operate
and release points in gauss for a digital
7-39
device) one can find the critical distances
for a particular magnet and type of motion. These field strength plots are not
linear, and the shape of the plot depends
greatly upon magnet shape, magnetic circuit (concentrators), and path traveled.
.. Total Effective Air Gap. Hall-effect
switches are offered in many different
packages, such as epoxy three-pin SIPs,
ceramic substrate mounted chips, ceramic
three-pin SIPs, and surface mount
packages. The most critical difference between packages is the distance from the
face of the package to the surface of the
Hall cell: the active area depth, which effectively adds to the total effective air gap.
The total effective air gap (TEAG) is the
sum of the active area depth and the
distance between the package's surface
and the magnet's surface. For Hall device
applications, the TEAG should be as small
as possible, consistent with the limitations
of the activating mechanical system. This
will ensure that the magnetic flux will
always be great enough to switch the
device. Remember, magnetic flux decreases very sharply as the total effective
air gap increases.
.. Modes of Operation. There are many
ways to operate a Hall sensor . For example, with a simple bar or rod magnet there
are two possible paths for the magnet to
travel-head-on and slide-by. In the headon mode, the magnetic pole moves along
a perpendicular path straight at the active
face of the Hall device. The head-on mode
is simple, works well, and is relatively insensitive to lateral motion; however, if
mechanism moving the magnet
shoots the mark, the sensor package
be damaged.
A second possible path is to move the
magnet in from the side'of the Hall device
in the slide-by mode of operation. The
slide-by mode is commonly used to avoid
contact with the sensor package. The use
of strong magnets or ferrous flux concentrators in well·designed slide·by magnetic
circuits allows better sensing precision
with a shorter travel path than the headon mode.
Magnet manufacturers generally can
provide head-on flux density curves for
THE HALL-EFFECT SENSOR
Ferrous Vane
Hall Switch On
Hall Switch Off
Figure 4. The ferromagnetic vane moves between the
activating magnet and the Hall·effect switch shunting
the flux field from the switch. These assemblies can be
used for precision switching over large temperature
ranges.
The Hall device is held in the on state
by the activating magnet. Placing the vane
between the magnet and the Hall device
(Figure 4) forms a magnetic shunt that
distorts the flux field away from the Hall
device. The vane can be made in many
configurations to repeatedly sense position
within ±0.002 in. over a 125°C temperature range.
The ferrous vane or vanes that interrupt
the flux could have linear motion or rotational motion (as for a shaft encoder). Ferrous vane assemblies, due to the steep flux
density/distance curves that can be
achieved, are often used where precision
switching over a large temperature range
is required.
• Steep Slopes and High F1ux Densities.
For linear Hall devices, greater flux
changes for a given displacement give
greater outputs, clearly an advantage
because the voltage output of the sensor
will be much greater, reducing the
possibility of instruments picking up electrical noise. The same property is desirable
for digital Hall devices, but the reasons are
more subtle. To achieve consistent switching action in a given application, the Hall
device must always switch on and off at
the same positions relative to the magnet.
Consider, for example, the flux density
curves of the two different magnet configurations in Figure 5. With an operating
point flux density of 200 gauss, a digital
their magnets, but they often do not
characterize magnets for slide-by operation, possibly because different air gap
choices lead to an infinite number of these
Alnico~, .2.2"D, .187"
curves. Once a TEAG is chosen, however, :r 1000
T.E.A.G.
the head-on magnet curves can be used to ~800
j
find the peak flux density (a single point)
A
for slide-by applications by noting the )600
~
value of magnetic flux at the chosen i 400
TEAG.
;'1 I
A third mode of operation keeps the ~ 200
B
I'. -,.....
Hall-effect sensor and magnet a fixed
0
.05
.10 .15 .20 .25 .30 .35 .40
distance from one another and switches
Distance (0) (inches)
the sensor with a movable ferromagnetic
vane. The Hall device and magnet can be Figure 5.Hall devices must always switch onloff at the
molded together as a unit in a single rigid same point relative to the magnet. The effect of a change
in flux density on switching distance is shown.
assembly, separated by an air gap. This
eliminates alignment problems and produces an extremely rugged switching Hall-effect device would turn on at a
assembly.
distance of approximately 0.14 in. from
'~D
~
7-40
either magnet. If manufacturing tolerance
or temperature effects shifted the
operating point of the sensor to 300 gauss,
notice that in the curve for magnet "A"
(steep slope) there is very little change in
the distance at which switching occurs,
while in the case of the curve of magnet
"B," the change is considerable. The
release point would be affected in much
the same way.
The basic principles illustrated in this
example can be modified to include mechanism and device specification tolerances
and used for worst-case design analysis.
ELECTRICAL
INTERFACE FOR
DIGITAL HALL DEVICES
A typical application for a Hall-effect
sensor is interfacing the sensor signal to
a microprocessor. The output of the Hall
element is quite small; therefore, Hall ICs
have been developed that contain a
voltage regulator to allow a wide range of
operating voltages, a high-quality DC
amplifier to boost the element signal to a
more easily used signal, a Schmitt trigger
threshold detector to produce digital logic,
and output stages for universal interfaces
capable of current sinking or sourcing. The
output of the Hall-effect digital switch can
be either linear (proportional to the
magnetic field present) or clean-switching
(no bounce) digital logic. Energy consumption is very low, and frequency responses
are well over 100 kHz.
The output stage of a digital switch is
simply an open collector npn transistor
switch, and the rules for use are the same
as those for any similar switching transistor. When the transistor is off, there is
a small leakage current (typically a few
nanoamps) that usually can be ignored and
a maximum (breakdown) voltage specification that must not be exceeded.
When the transistor is on, the device
output is shorted to the circuit common,
and the current flowing through the
switch must be externally limited to less
than the maximum specified value to prevent damage (usually 20 mAl.
Hall devices switch very rapidly; typical
rise and fall times are in the 400 nano-
THE HALL-EFFECT SENSOR
second range. This is rarely significant,
since switching times are almost univer·
sally controlled by the much slower
- mechanical parts of the device.
Interfacing with digital logic integrated
circuits usually requires only an appropriate power supply and pull-up
resistor.
Loads that require sinking currents up
to 20 rnA can be driven directly by a Hall
switch. A good example is a light emitting
diode (LED) indicator that requires only
a resistor to limit current to an appropriate
value.
Sinking more current than 20 rnA requires a current amplifier. For example, .
Magnetic Materials
Most Commonly Used
~ Rare Earth-Cobalt. An alloy of
rare earth metal, such as samarium, with
cobalt (abbreviated RE cobalt). These
magnets are the best in all categories but
are also the most expensive. roo hard for
machining, these magnets must be
ground, if shaping is necessary. Maximum energy product, perhaps the best
single measure of magnet quality, is approximately 16 x 106•
~ Alnico. A class of alloys containing
aluminum, nickel, cobalt, iron, and additives, which can be varied to give a
wide range of properties. The magnets
are strong and fairly expensive, but less
so than RE cobalt. Alnico magnets can
be cast or sintered by pressing metal
powders into a die and heating. Sintered
alnico is well suited to mass production
of small, intricately shaped magnets, has
a more uniform flux density, and is mechanically superior, but cast alnico
magnets are generally magnetically
stronger. The nonoriented or isotropic
alnico alloys (alnico-I, alnico-2, alnico-3,
alnico-4) are less expensive and magnetically weaker than the oriented alloys
(alnico-5, alnico-6. . .alnico-9). Alnico is
too hard and brittle to be shaped except
by grinding. Maximum energy products
range from 1.3 to 10 X 106•
~ Ceramic. These magnets contain
barium or strontium (or another element
if a certain load to be switched requires 4
amperes and must turn on when the activating magnet approaches, the circuit
shown in Figure 6 could be used. To turn
on a 115 or 230 VAC load, consider Figure
7. Note, however, that the + 12 V supply
common is connected to the low side of
the AC line, and in the event of a mixup,
the Hall switch and associated low voltage
circuitry would be 115 volts above ground.
Due to the magnetic field around any
current-carrying conductor, Hall-effect
devices can be used to measure and limit
current by converting this magnetic field
to an electrical signal. The sensor response
ranges from DC to the kHz range, and the
from that group) ferrite in a matrix of
ceramic material that is compacted and
sintered. They are poor conductors of
heat and electricity, chemically inert, and
have high values of coercive force. As
with alnico, ceramic magnets can be
fabricated with partial or complete orientation for additional magnetic strength.
Less expensive than alnico, they are also
too hard and brittle to shape except by
grinding. Maximum energy products
range from 1 to 1.3 X 106•
~ Cunife. A ductile copper base alloy
with nickel and iron, cunife can be
stamped, swaged, drawn, or rolled into
final stage. Maximum energy product is
approximately l. 4 x 106.
~ Iron-Chromium. These magnets have
magnetic properties similar to alnico-5
but are soft enough to undergo machining operations before the final aging
treatment hardens them. Maximum energy product is approximately 5.25 x 106•
~ Plastic and Rubber. These magnets
consist of barium and strontium ferrite
in a plastic matrix material. They are
very inexpensive and can be formed in
numerous ways, including stamping,
molding, and machining, depending on
the particular matrix material. Since synthetic rubber is a plastic, the distinction
between the two materials is not very
precise. If a plastic magnet is flexible like
rubber, it is generally called a rubber
magnet. Maximum energy products
range from 0.2 to 1.2 x 106•
7-41
+12V
Figure 6. This circuit could be used if a load required
a current of 4 A to switch.
conductor need not be interrupted. In low
current applications, the magnetic field
about a conductor is not normally intense
enough to operate a Hall-effect digital
switch; therefore, it would be best to use
a toroid or closed magnetic circuit to increase the flux density.
Hall-effect linear sensors are used
primarily to sense relatively small changes
in magnetic fields-changes that are too
small to operate a Hall-effect switching
device. They are customarily capacitively
coupled to an amplifier that boosts the
output to a higher level (Figure 7).
1151230
VA'
HIGH
L--------+---'--!~Vl
COMMON
Figure 7. This circuit could be used to switch a 115 or
230 VAC load.
As motion detectors, gear tooth sensors,
and proximity detectors, linear Hall-effect
sensors produce an electrical output that
is a magnetically driven mirror of
mechanical events. As sensitive monitors
of electromagnets, they can effectively
measure a system's performance with
negligible system loading while producing
isolation from contaminated and electrically noisy environments.
Hall-effect sensors, both digital and
linear, are used in the commutation of
brushless DC motors, speed sensors, shaft
encoders, current limiters and monitors,
position sensors, and gear tooth sensors.
Recent technology breakthroughs in Halleffect devices have made available sensors
for temperature ranges as high as l70°C.
These sensors have been integrated into
a vast array of innovative high-technology
applications where reliability, efficiency,
and cost competitiveness are a must.
LIGHT SENSING
LIGHT SENSING USING
OPTICAL INTEGRATED CIRCUITS
RAVI VIG, SPRAGUE ELECTRIC COMPANY
I
of photodiodes-exhibit a high degree of linearity, Schottky
devices have lower junction capacitance and are, thus, faster
than p-n junction photodiodes. In phototransistors, incident light
on the base of a transistor controls the collector current. These
devices are typically used in switching and modulation applications where high gain and fast response are more important than
linearity. Avalanche photodetectors are reverse biased junction
detectors wherein the optically generated carriers are accelerated
so as to further generate carriers by impact. These devices are
·typically used in high-speed communication applications.
ight sensing has traditionally been used for a variety of trans-
I.; ducing applications including absolute light measurement
position encoding, rotary speed measurement, optical communications, and electrical isolation. Most of these applications
use light emitters and detectors along with additional drivingsensing circuitry to enable the sensing of electrical or mechanical
stimuli.
Light emitters come in several varieties: incandescent lamps
(or light bulbs), light-emitting diodes (LEDs), and lasers. In most
transducer applications, incandescent lamps are not used due
to their slow response to electrical stimuli and the lack of focused
light emission. LEDs are more popular because they respond
to fast electrical impulses, emit focused light of a narrow bandwidth, and the intensity of emitted light can easily be changed
by changing the current through the device. However, the maximum intensity of the light emitted by LEDs is severely limited.
This problem has been overcome by lasers, which have more
power than LEDs, but laser usage is constrained by the need
for expensive driving electronics and the inability to easily
change the intensity of the emitted light. Therefore, most electrical transducing applications use LEDs.
Since several of the junction photodetectors mentioned can
be fabricated from silicon, it is possible to incorporate the
receiver circuitry with the photodetector to create a low-cost
solution to light detection problems. (The processing of the optical signals is performed using decoding receiver circuitry.) Incorporating a preamplifier with the photodetector also permits
smaller photodetectors, resulting in lower junction capacitance
and smaller device size. Extremely sensitive optical detectors
may be constructed since lower light currents can now be
amplified without external noise coupling. Integrated circuit optical sensors typically use silicon-based photodiodes since they
are easy to fabricate and are compatible with the Ie process.
While there are several types of light detectors, the most
popular detectors are semiconductor-based devices, which fall
into two major categories: photoconductors and photodetectors.
Photoconductors are devices whose resistance decreases with
incident light. Cadmium sulfide and cadmium selenide are examples of photoconductors that are sensitive to visible light.
These devices are relatively large, typically ranging in diameter
from 5 to 25 mm.
PHOTODIODES
Typical junction photodetectors, such as photodiodes, Schottky photodiodes, phototransistors, and avalanche photodetectors, work under the principle of carrier transport across material
interface junctions. Photodiodes respond to optical radiation by
generating electron-hole pairs, which are then transported across
a p-n junction. Carrier transport in Schottky photodiodes takes
place across a metal-semiconductor junction. While both types
Photodiodes are reverse biased p-n junctions that respond to
optical radiation. Photons captured close to the p-n junction
release electrons into the conduction band which are swept
across the junction. This electron flow represents the photocurrent (or light current) of the diode.
Light current is greatly dependent on the spectrum of the
incident light. The spectral response of a photodiode is determined by the material from which it is fabricated and the diode
junction depth. The response of the long wavelength of the
photodiode is controlled by the band-gap energy of the material,
that is, the energy needed to release an electron from the valence
7-42
LIGHT SENSING
1.2
[(HUMAN EYE (P,HOTOT?PIC)
,S, PHOTOOIOOE
1.0
(
w
en
5a.
0.8
--'
<>:
0.6
w
a.
en
w
>
0.4
en
w
a:
~
~
--'
w
a:
/\
)
/'
If /
0.2
o ~
200
/
400
~
/'
NPN TRANSISTOR
r~~bTOOdoE
V
'1\
_\
\
I TA- +2n I
,\
/
600
\
800
\
1000
1200
51 PHOTODIODE
II
1400
1600
1800
P-SUBSTRATE
\
2000 Figure 2. A cross section of a silicon IC shows a typical npn transistor and a
photodiode (drawing is not to scale).
WAVELENGTH IN NANOMETERS
Figure I. The CIE spectral response curve is overlaid on the spectral responsivity
curves of silicon and germanium (1,3).
temperature of the receiver circuitry. Dark current is given by:
band to the conduction band. The energy of an incident photon
is given by:
E = hv
where:
h =Planck's constant
v = c / 1 is the frequency of light
c = velocity of light
The electron will be released only when:
E;;. Eg
where Eg is the energy gap of the semiconductor defined in
electronvolts, or:
h
E
v;;. g
where:
IOark
The longest wavelength absorbed is given by:
1 = Eglhc
The short wavelength response of the photodiode is determined
by the depth of the junction from the surface. Shorter wave·
lengths are absorbed near the surface, generating electron·hole
pairs. These pairs recombine before they reach the p·n june·
tion, so do not result in photocurrent. Deep junction photo·
diodes have low responses to short wavelength radiation.
These processes result in spectral responsivity curves that are
nonuniform with wavelength. Figure 1 shows the spectral
responsivity curves of Si and Ce, along with the eIE photopic
response curves. The peak response of Ce is at 1.5 101m, while
Si is at 0.85 101m. This corresponds to a band·gap energy of 1.1
eV for Si and 0.67 eV for Ce. The drop in responsivity at low
wavelengths is due to lower efficiencies for a deep junction. Note
the low photo diode spectral response in the region of the
photopic curve.
Since the diode is reverse biased, ideally no other current
should flow; however, fabrication impurities cause leakage cur·
rent that flows even when no light is incident on the junction.
This leakage current (also known as dark current) is a function
of reverse bias, diode junction size, and ambient temperature.
Large dark current values limit the signal·to·noise ratio of the
photodiode and place constraints on the maximum operational
=
-10
(e(VNt)
-
1)
= reverse saturation current
V = reverse bias voltage
Vt = kT / q (k =Boltzmann's constant, q =electron
charge, T = absolute temperature)
10
From this equation it can be seen that for no incident light, the
dark current is dependent on the applied voltage and the abo
solute temperature. It can also be noted that theoretically, dark
current goes to zero for no applied voltage and, hence, loses its
temperature dependence.
~ Light Measurement. Due to the nonuniform response of a
photodiode to the spectrum of incident light, photodiode sen·
sitivity is generally specified in radiometric units as the power
of light incident I.p.AlIoIW/ cm2) for a given wavelength. Absolute
light levels are specified in power incident I.p.W/cm2) for a given
light bandwidth. Since it is difficult to generate a light source
of a single wavelength, the light is assumed to have the spectral
output of a specified LED, e.g., an AlCaAs LED is normally
used with a silicon photodiode. Other optical units, such as foot·
candles and lumens, are not appropriate since they assume a
photopic spectral response.
~ Integrated Circuit Optical Sensors. Traditionally, photo·
diodes have been used in conjunction with hybrid amplifier cir·
cuitry to perform certain signal processing applications. These
operations may include light current amplification, light
threshold detection, and light demodulation. Building photo·
diodes out of silicon has given the Ie designer the ability to
fabricate both the hybrid circuitry and the photodiode on the
same silicon substrate, thus eliminating the need for additional
circuitry.
Figure 2 shows the cross section of a silicon Ie containing
an npn transistor and a photodiode fabricated using a bipolar
integrated circuit process. Most bipolar processes are fabricated
7-43
LIGHT SENSING
Table 1
Electrical Characteristics atTA = +25°C, Vcc =6.0V,l=880 nm
Limits
Characteristic
Min.
Typ.
Max.
Supply Voltage Range Vec
4.0
6.0
15
V
Supply Current
-
4.0
B.O
mA
EON
Output ON
45
55
65
~W/cm2
Output OFF
-
62
-
~W/cm2
AE
(Eo" - EON)/EOFF
10
12
14
%
Output ON Voltage
VOUT
10UT= 15 mA
300
500
mV
lOUT = 25 mA
-
500
BOO
mV
Output OFF Current
lOUT
VOUT= 15 V
-
-
1.0
~
Output Fall Time
t,
90% to 10%
-
200
500
ns
. Output Rise Time
t,
10% to 90%
-
200
500
ns
Hysteresis
GROUND
Figure 3. A functional block diagram of the Sprague ULN·3330 Ie optical receiver
is shown.
by growing an n·type epitaxial layer on a p-type substrate. Individual devices are separated into epitaxial pockets by forming a reverse biased isolation-epitaxial junction A (p + - n) at
the pocket walls. Impurities are then diffused into these epitaxial
pockets to create devices (npn and pnp transistors, resistors).
The npn transistor shown in Figure 2 is manufactured using
the above techniques. The collector of the transistor is the lightly
doped epitaxial layer. Diffused into this layer is a heavily doped
p + layer that forms the base of the transistor. The emitter is
the strongly doped n + layer. The npn junctions are formed
along the vertical axis B. Aluminum contacts are directly made
to the emitter and base. Contact to the collector is made by the
aluminum through a low-resistance n + plug and buried layer.
The substrate-epitaxial interface C forms a p-n junction which,
when reverse biased, can be used as a photodiode. P-type impurities in the form of base diffusion form an additional junction D, across which optically generated carriers may be transferred. The photodiode is normally the largest single component on the IC. Photodiodes can vary in size from 20 by 20 mils
to 30 by 30 mils.
~ Typical Optical Receiver. Using these techniques, an IC
designer can fabricate a high-quality, low-noise receiver that can
be incorporated onto a single silicon substrate. There are two
basic types of integrated sensors: linear and digital. The output
of a linear sensor is proportional to the incident light level. This
device is generally factory calibrated for repeatable sensitivity.
A digital sensor is a level detector that switches on at a fixed
light level. The device incorporates positive feedback circuitry
that induces a hysteresis that inhibits release until the output
moves much lower than the previous trip point.
Figure 3 describes a typical digital optical sensor, the Sprague
ULN-3330. This device has an on-chip ground-referenced
photodiode whose photocurrent is fed into a current amplifier.
This amplified current is then converted into a voltage level by
dropping it through an adjustable load resistor. A comparator
checks this voltage level and switches on at a predetermined
Icc
Units
EOFF
Light Threshold Level
~--------------~~----------~----{2
~ymbol Test Conditions
threshold level. For noise immunity, internal feedback disables
switching until the light level falls approximately 12 percent
below the switching threshold. The output interface allows
switching of TTL and CMOS devices, as well as the ability to
drive low-current relays.
Circuit designers benefit from the use of IC technology in
the design of optoelectronic sensor circuits. Low photodiode currents on the order of a few hundred nanoamperes can be
amplified without worrying about external noise sources; hence,
smaller diodes can be used. Matching accuracy of transistors
and resistors helps create high-quality, low-offset amplifiers.
Amplifier and photodiode characteristics can be internally compensated using the repeatable temperature characteristics of IC
resistors and diode junctions, while switching thresholds can be
adjusted at wafer test by trimming on-chip resistors. In addition,
the reliability of these devices may be much greater than for
hybrid assemblies.
OPTICAL SENSOR APPLICATIONS
Optical ICs do not, however, replace careful engineering
review on the part of the optical assembly designer. Several factors contribute to a successful optical system design. These factors include light threshold levels, ambient light interference,
output load conditions, and voltage supply.
Table I shows a typical specification table for a digital output optical sensor (in this case, the ULN-3330). Defined in this
table are the supply voltage ranges, supply current limits, and
sink current capabilities. An important specification is the light
threshold level. The ULN-3330 is a highly sensitive device, with
light threshold levels under 651lW Icm 2 and a hysteresis of IO-14
percent. When designing transducing assemblies using a sensitive optical receiver, ambient light levels may provide a significant and unwanted noise contribution. In addition, the light
emitted by a commercial LED may vary a great deal for a given
LED driver current. If optical measurements are not carefully
taken, high ambient light levels (noise) may keep the detector
always switched, while low LED light outputs (signal) may never
switch the detector.
7-44
LIGHT SENSING
Figure 4. Shown is a commonly used speed·sensing assembly. The light field be·
tween the emitter·detector pair is interrupted by the rotating code wheel.
When measuring light levels it is important to use a linear
receiver whose photodiode is of the same material and is roughly
the same area as that of the digital sensor. If a different material
is used, the difference in spectral responsivity will result in in·
accurate readings. If the linear receiver is much larger in area,
then optical patterns on the receiver may not be the same as
those on the digital sensor, thereby creating faulty readings.
When using the ULN·3330 or any other Sprague optical IC, the
ambient light level can be accurately measured using the
ULN·33 10.
By carefully following the device specification table and by
making the appropriate optical measurements, optical integrated
circuit sensors can be used in a variety of detection applications.
The availability of vast amounts of circuitry in a small package
provides optical system designers with a powerful tool.
~ Absolute Light Measurements. The Sprague ULN·331O has
been used in several applications for the measurement of light
such as automatic brightness control for CRTs, feedback for
photocopiers, and light measurement for cameras. This linear
optical IC is preferred over other photodetectors because of the
factory calibration of its sensitivity.
Absolute light sensing is also used for switching street,
emergency, and automotive lighting. In these applications, the
light level is measured using a photosensor (usually a cadmium
sulfide photoconductor) and the switching assembly is designed
so as to trip when the light falls below a specified value. Photo·
conductors are highly sensitive to ambient temperature, mak·
ing the trip points difficult to stabilize over temperature extremes. The same function can De accomplished using the internally compensated ULN-3390. This device is a highly sensitive digital output device that trips and releases at 10 p.W Icm 2
and 20 p.WIcm 2 respectively. Internal hysteresis provides immunity to small light variations (due, for example, to changing
cloud cover), thus lowering the chances of oscillations in the
switching circuitry.
~ Optocouplers-Optoisoiators. Emitter-detector pairs are linked
together through an optical waveguide to couple electrical signals
for communications and isolation applications. In communication applications, the waveguide is generally a fiber-optic cable.
Low-speed communications problems may be solved using
digital ICs. The ULN-3395, with a propagation delay time of
less than 5 p.s, is one example of a commercially available IC.
Higher speed applications demand fast responding avalanche
photodiodes and hybrid receiver circuitry.
Optical isolation is accomplished by inserting an emitterdetector assembly between sensitive electronics and controller
switching circuitry. The waveguide is the package itself. This
8
8
.:1-1-1- -- _j:j:j:j:::E
CODE WHEEL
(ROTATING)
PHASE PLATE
PHASE PLATE
(FIXED)
m
WHEEL
ffiDETECTOR
~ECTOR
Figure 5a and b. This high·resolution rotary encoder shows the fixed phase plate along with the rotating code wheel. The two photodetectors are placed such that a light
field on one device corresponds to a dark field on the other.
7-45
LIGHT SENSING
isolates electrical processes on the receiver end from those on
the emitter end-a technique that is used to protect expensive
circuitry from the effects of shorts or faults on the controller
switching lines.
~ Rotary Encoding. Speed sensing and rotary position en·
coding are best done using optical emitter-detector assemblies.
Figure 4 shows a common assembly used in speed measurement
applications. Here, the rotating wheel interrupts the light field,
causing the detector to switch, generating a pulse for each slot
in the wheel. In this assembly the number of pulses per revolution is limited by the emitter beam width as well as the detector element size. Typical interrupter widths of 200-300 mils are
used.
A newer technique used in high-resolution rotary encoding
is illustrated in Figure 5. Interrupting the light path are a rotating
code wheel and a fixed phase plate. The code wheel has a fixed
number of apertures (as many as 256) around its circumference.
The fixed phase plate also has a number of apertures of the same
size as those in the code wheel and is fixed directly above the
light sensing photodetector, as shown in Figure Sa. Rotation of
the code wheel creates alternate light and dark periods on the
surface of the detector. Using this technique, high-resolution
measurements have been obtained by sensing code wheel apertures of 10 to 20 mils. In addition, the phase plate can be coded
to allow placement of another photodetector Ie that is 90
degrees out of phase with the first detector, as shown in Figure
5b. This allows the sensing of both position of the wheel and
direction of rotation.
~ Miscellaneous Applications. Optical sensors are used in
several other applications. Some smoke detectors use sensitive
optical detectors to ascertain the presence of smoke in the
assembly. Emitter-detector pairs are used as sheet edge detectors in photocopiers for detection of paper size. Detection can
be done in both the transmissive and reflective modes, as shown
in Figure 6. Fluid level measurement systems use emitterdetector pairs that cause the detector to switch when fluid in
a tube interrupts the beam path. Burglar alarm systems use infrared emitter-detector pairs that switch when the beam path
TRANSMISSIVE
PAPER
PAPER
~7\:-
r£fj
1
\
REFLECTIVE
Figure 6. Sheet detector configurations using transmissive and reflective modes of
operation are shown.
7-46
BI088ary 01 Term8
band-gap energy (EJ: The energy difference between energy levels
of the conduction band and the valence band. It is also the minimum
energy required to free an electron from the valence band to the
conduction band.
eIE: Acronym for the Commission Intemationale de l'Eclairage. The
International Commission on Illumination has been responsible for
setting several lighting standards.
conduction band: The band of energy levels occupied by a valence
electron when it is liberated from an atom. Electrical conduction
in a semiconductor crystal takes place through the transport of electrons in the conduction band.
epitaxial material: A material whose atoms are arranged in single
crystal fashion upon a crystalline substrate so that its lattice structure duplicates that of the substrate.
hysteresis: To provide noise immunity, the switch points of a com·
parator are altered using positive feedback so that the voltage required to switch the comparator output low (operate point voltage)
is greater than the voltage required to switch the output high (release
point voltage). The difference between these switch points is a
measure of the hysteresis of the comparator.
n + ·type material: Heavily doped n-type material, formed by introducing donor impurities into a silicon substrate. Conduction takes
place by the movement of free electrons.
p + -type material: Heavily doped p-type material, formed by introducing acceptor impurities into a silicon substrate. Conduction
takes place by the movement of holes.
p-n junction: Material interface between positively doped (p·type)
and negatively doped (n-type) semiconductor. These junctions are
fundamental to the performance of switching, rectification, and
amplification functions in electronic devices and circuits.
photometric units: Radiometric quantities spectrally weighted by
the spectral response of the human eye (also called the photopic
response). Typical units of illuminance are foot-candles or lumens.
photopic response: Spectral response of vision mediated essentially or exclusively by the cones in the human eye. Standards for this
response have been laid down by the International Commission on
Illumination (CIE).
valence band: The electrons in the outermost shell of an atom
(valence electrons) occupy a band of energy levels called the valence
band. Electrons in this band do not participate in electrical conduction in silicon.
LIGHT SENSING
is interrupted by an object. The same strategy can also be used
to generate signals for counting moving objects such as bottles
and cans on a moving assembly line.
circuit-based transducers are the sensors of choice.
REFERENCES
CONCLUSION
Optical integrated circuits give the designer the ability to
design complex transducing functions using a small number of
integrated components at a low cost. The small package sizes
allow for use in a large number of size·critical applications. Clearly,
in many measuring and sensing applications, optical integrated
I. Budde, W. "Optical Radiation Measurements," Physical Detectors of Optical
Radiation, vA, Academic Press, p. 239.
2. Streetman, Ben. Solid State Electronic Devices, 2nd ed., Prentice· Hall, p.
211-212.
3. Silicon and CIE, Photodiode spectral response from Sprague Integrated Cir·
cuit Bulletin 27480B, p. 3.
Reprinted from Sensors, August 1986
Copyright© 1986 by North American Technology, Inc.
174 Concord St., Peterborough NH 03456
All Rights Reserved
7-47
GENERAL INFORMATION
. HALL EFFECT SWITCHES
II
<: 'II
"';"-;11
I
HALL EFFECT LATCHES." ,.
1
HAlL EFFECT
'.
UNEAi!S " ,
I
I. SPECJAL.PUR~E SENS08S;"::::"1I
OPTDELECTIIOfIfC SENsORS·.
I
~"
APPLICATIONS . .... .
"'
~
.. "
,","
",
'
"
1/
"
I
PACKAGE INFORMATION
..
:'-.. '
SECTION 8-PACKAGE INFORMATION
Hall Effect ICs Packages and Installation Guidelines .......................................... 8-2
Optoelectronic Packages and Installation Guidelines .......................................... 8-3
Package Drawings
Suffix '0' 3-Lead Metal Hermetic Can with Glass End Cap ..................................... 8-4
Suffix 'HH' Head Ceramic Single In-Line ................................................ 8-5
Suffix 'K' Head Plastic Single In-Line .................................................. 8-6
Suffix 'LI' 8-Lead Plastic Small Outline (SOIC) ............................................. 8-7
Suffix'LL' Head Plastic Small Outline (Long Lead SOT 89) .................................... 8-8
Suffix 'L1' 3-Lead Plastic Small Outline (SOT 89) ........................ I . . . . . . . . . . . . . . . . . . 8-9
Suffix 'M' 8-Lead Plastic Dual In-Line .................................................. 8-10
Suffix'T' 3-Lead Plastic Single In-Line ................................................. 8-11
Suffix 'U' Head Plastic Single In-Line ................................................. 8-12
Suffix 'UA' 3-Lead Plastic Single In-Line ................................................ 8-13
8-1
PACKAGE INFORMATION
HALL EFFECT ICs
PACKAGE CHARACTERISTICS
Package
Designator
Package Type
Lead
Material
Page
HH
Head Ceramic SIP
Alloy 42
8-5
K
4-Lead Plastic SIP
Copper
8-6
LI
LL
LT
T
U
UA
8-Lead Plastic SOIC (MS-012M)
3-Lead Plastic SOT 89 (Long Leads)
3-Lead Plastic SOT 89 (TO-243M)
Copper
Copper
Copper
8-7
8-8
8-9
3-Lead Plastic SIP
Copper
8-11
3-Lead Plastic SIP
Head Plastic SIP
Copper
Copper
8-12
8-13
PLASTIC PACKAGES FOR HALL EFFECT ICs
4. High glass transition temperature(t.) = + 160°C.
5. Good thermal expansion characteristics25°C - 125°C = 30 x 10- 6 in.lin.l°C.
150°C - 220°C = 80 x 10- 6 in.lin.l°C.
6. Underwriters listed flammability ratingV-O@ Yl6in. (self-extinguishing).
7. Device leads meet solderability requirements of
Military Standard MIL-STD-202 (95% or better
solder wetting without special preparation).
Sprague Hall Effect ICs are packaged in a stateof-the-art epoxy material formulated to withstand
severe environments. Its properties include:
1. Excellent moisture resistance-typically over
200 hours of pressure cooker exposure and 1000
hours of + 85°C/85% RH with zero failures.
2. Excellent chemical resistance.
3. Excellent thermal stability-typically over 3000
hours of continuous operation at + 175°C.
GUIDE TO INSTALLATION
280
---- r---.-
I-'
I. All Hall Effect integrated circuits are susceptible to mechanical stress effects. Caution should be
exercised to minimize the application of stress to the
leads or the epoxy package. Glues and potting compounds shrink while curing and can shift the operating parameters of a Hall Effect device.
2. To prevent permanent damage to the Hall cell,
heat-sink the leads during hand-soldering. Recommended maximum conditions for wave soldering are
shown in the graph at right.
260
w
tr
::> 240
;!;
~
~ 220
::;;
I!!tr
w
~
en
200
I
o
5
10
15
TIME IN SOLDER BATH IN SECONDS
Dwg. No. A-12.0S2A
8-2
PACKAGE INFORMATION
OPTOELECTRONICS PACKAGE CHARACTERISTICS
Package
Designator
Package Type
Lead
Material
Page
D
3-Lead Metal Hermetic TO-52
Kovar
8-4
M
8-Lead Plastic DIP
Copper
8-10
T
Head Plastic SIP
Copper
8-11
METAL PACKAGES
PLASTIC PACKAGES
Sprague optoelectronic sensors are supplied in a
hermetically sealed metal package with a glass end
cap. The package meets JEDEC specification TO52.
Sprague optoelectronic sensors are packaged in
clear epoxy formulated for maximum optical transmission. Its properties include:
I. Excellent chemical resistance.
2. Good moisture resistance.
3. High glass transition temperature(Tg ) = + 120°C.
4. Good thermal expansion characteristics25°C - 12SOC = 65 x 1O-"in.iinfC.
GUIDE TO INSTALLATION
Clear epoxy packages can be damaged by excess
heat during soldering. Time at temperature should
be maintained at absolute minimums necessary for
normal soldering, or leads should be attached for
heat sink during soldering.
8-3
PACKAGE INFORMATION
METAL TO-52 (TO-206AC)
SPRAGUE PACKAGE DESIGNATOR 10'
DIMENSIONS IN INCHES
DIMENSIONS IN MILLIMETERS
Based on 1" = 25.4 mm
J
O.230
0:209
0.195
o:i78
0.150
0.115
'
,--0.030
MAX.
~:;:;:;:;~'---.l..-
T
I
I
T
0.500
MIN.
12.70
MIN.
~
~~
0.41
45·
0.046
0.036
45·
>£~
1.16
0.92
~ MEASUREQ FROM MAX. DIA.
0.028 OF ACTUAL DEVICE
'~$ ~ 0.72
~ MEASURED
FROM MAX. DIA.
OF ACTUAL DEVICE
Owg. No. A-3893B MM
Owg. No. A-3893S IN
NOTE: Lead spacing diameter is controlled in the zone between 0.050" (0.13 mm) and 0.250" (6.35 mm) from the seating plane. Between 0.250"
(6.35 mm) and 0.500" (12.7 mm) from the seating plane, a maximum lead spacing diameter of 0.021" (0.53 mm) is specified. Outside of
these zones the lead spacing diameter is not controlled.
8-4
PACKAGE INFORMATION
CERAMIC SIP
SPRAGUE PACKAGE DESIGNATOR 'HH'
DIMENSIONS IN INCHES
I---
0.160 ± 0.004---1
0.125
±0.002
0.500
MIN.
n
u
~
Lo
--H~-0010
o
--i
0.050
TYP.
i-- ~
1-0.015
Dwg. No 13,085 A
DIMENSIONS IN MILLIMETERS
(Based on 1" = 25.4 mm)
0.89
±0.05
1---
4 .06 ±0.10---j
T
2.86
±0.05
Dwg No. 13,086 A
NOTE:
1. Tolerances, unless otherwise specified, are ± 0.005" (0.13 mm)
8-5
PACKAGE INFORMATION
PLASTIC SIP
SPRAGUE PACKAGE DESIGNATOR 'K'
DIMENSIONS IN INCHES
t
4~~0;33
o 200+.005j
-.000
t
~0.010R
•
~--r 0.~605
1r
2°
o.001
}=- I(NOTEl
f
0.130~gg6
I
I~~
i
kill
L~
0.500 MIN.
[0.018
0.016
I
0.014
o
0.015
I
Dwg. No.A-14,413,in.
DIMENSION.S IN MILLIMETERS
(Based on 1"
t
= 25.4 mm)
5.08+0.13j
-0.00
/'i0.25R
4~~'--:oc7t-:---'T'"
,
"r~f'
~,-1.;4
Yrl=rrlT=;=f=Fl
LI
12.70 MIN.
0.41
I
~
0.38
1-- 0 .36
o
Dwg No A-14,413,mm
NOTES:
1. Ejector pin is centrally located.
2. Tolerances on package height and width represent allowable mold offsets. Dimensions given are
measured at the widest point (parting line).
3. Tolerances, unless otherwise specified, are ± 0.005" (0.13 mm) and ± W.
8-6
PACKAGE INFORMATION
PLASTIC SOIC
SPRAGUE PACKAGE DESIGNATOR ILiI
DIMENSIONS IN INCHES
(Based on 1 mm = 0.394")
:1:-~
0.1574
~
I
0.013B I
0.0192--o;1~r-
-..j
0.1B90
0.196B
~fo:-g~~o
SEATING
~1.1iHiiHl"l
PLANE
0.0040 MIN.
0.0532
006BB
Dwg No A-14,414. In
DIMENSIONS IN MILLIMETERS
To~L
-*-
g~;~~
}BO
6.20
4.00
0.35J L.0.49· "~II-
-I
~I-'
.1
1.27
BSe
~
0.40
,-.C UY
11- ,
--I~ooTO B
O
4.BO
5.00
SEATING
~1.1iHiiHl"l
PLANE
0.10 MIN.
1.35
1.75
Dwg No.A-14.414.mm.
NOTES:
1. Lead spacing tolerance is non-cumulative.
2. Exact body and lead configuration at vendor's option within limits shown.
3. Lead gauge plane is 0.303 in. (0.76 mm) max. below seating plane.
8-7
PACKAGE INFORMATION
PLASTIC SOT 89 (Long Leads)
SPRAGUE PACKAGE DESIGNATOR 'LL'
DIMENSIONS IN INCHES
(Based on 1 mm = 0.394")
r--j~
o.173
I
gg~~_'_
gg1~
2
-
f-
0.642
0.652
.755
0.765
]
[]
Dwg. No. A-1.2,6S7A1N
DIMENSIONS IN MILLIMETERS
r-1....r-1
4.60
4.40
I
I
g.!~_,~
g~:
2
r- ...
16.31
1s.5s
9,'8
1943
]
[j
Dwg. No. A-12,657A MM
NOTE:
1. Tolerances, unless otherwise specified, are ± 0.005" (0.13 mm)
8-8
PACKAGE INFORMATION
PLASTIC SOT 89 (TO-243AA)
SPRAGUE PACKAGE DESIGNATOR ILT'
DIMENSIONS IN INCHES
(Based on 1 mm = 0.394")
Owg No. A-12,60BA IN
DIMENSIONS IN MILLIMETERS
4.4 0
4.60
M3
~~~;
H
-p; r
F=1i
TTlf-t229
044'
I~'
260
0.36 _ _-.<
0.56
0.48 150
sse
"L°l -1 r- ~;;
4
1.
I-
~ . ~39 H
I~
~i
3.00
sse
Dwg No. A-12.60BA MM
NOTE:
1. Tolerances, unless otherwise specified, are ± 0.005" (O.l3 mm)
8-9
PACKAGE INFORMATION
PLASTIC DIP
SPRAGUE PACKAGE DESIGNATOR IMI
DIMENSIONS IN INCHES
1
0..240.
0260.
0.0.0.8
rn
INDEX AREA
0..0.35
0..0.65
1~
I
~.0.40. REF
m§~i
----r-D° TO. 15°
0. 10.0.' 0. 0.10
--I
.
.
0..360.
0..390.
SEATING PLANE
NOTE 1
~-~
-.H-g:g~~-=t
~
0.10.0. MIN
0..0.15 MIN
0..20.0. MAX
Dwg. No. A-14.41S,m.
DIMENSIONS IN MILLIMETERS
(Based on 1" = 25.4 mm)
INDEX
f~
AREAO~t
0..89
I I
1.65!-...J
9.14
9.91
~~~
1.0.2 R:F.
2.54-0..25
SEATING PLANE
TO 15°
/
NOTE 1
L_~
-1f.-g;~ ~L.54
l[j2_BI
--..,Q0
MIN.
0..38 MIN
5.0.8 MAX.
Dwg. No. A-14.415,mm.
NOTES:
1. Leads 1,4, 5, and 8 may be half-leads, at vendor's option.
2. Lead spacing tolerance is non-cumulative.
3. Exact body and lead configuration at vendor's option within limits shown.
4. Lead guage plane is 0.030" (0.76 mm) max. below seating plane.
8-10
PACKAGE INFORMATION
PLASTIC SIP
SPRAGUE PACKAGE DESIGNATOR 'T'
DIMENSIONS IN INCHES
I
I
NOTE I
/t,
-~ ~- r--
+
',.j. /
I
I
I
1-
~O.OOI
1--0.01
I
I
0.500 MIN.
1
1- 1-0.01 6
f-.-. 1-0.05o
..... 0.100·
Dwg. No A-11 ,900 IN
DIMENSIONS IN MILLIMETERS
(Based on 1" = 25.4 mm)
0.46
0.46
12.70MIN.
I--
0.03
0.41
--0-0.36
1.27
Dwg. No A-~1,900 MM
NOTES:
1. Ejector pin is centrally located.
2. Tolerances on package height and width represent allowable mold offsets. Dimensions given are
measured at the widest point (parting line).
3. Tolerances, unless otherwise specified, are:±: 0.005" (0.13 mm) and:±: W.
8-11
PACKAGE INFORMATION
PLASTIC SIP
SPRAGUE PACKAGE DESIGNATOR lUI
DIMENSIONS IN INCHES
J-0.178~0.00·1
!
I
~O.OIOR
(000
~O'r!!L"=5=-',J'l::::;:'-~:-"~r::::;:;'•. ,~If
TYP.
I
0.;61!0.002
I- 0.i6Z-1
Z'
~
~+,
0.178 ~g:gg~
k
---t.++',+, ~I
I!
,1- ,1-0.0 18
-
0.500MIN.
!
NOTE I
-
1--0.01 6
-.0-0.014
I--- 1-0.05 o
--0.100·
Dwg No. A-11,901IN
DIMENSIONS IN MILLIMETERS
(Based on 1"
=
!
,. . . t . . . ,
-+ +-+--
r-
25.4 mm)
!
0.46
''''+'I .,/
,1I
IZ.70 MIN.
,/NOTE I
1-0.4 6
I
-
(--..
I -/.'''REF.
~
0.46
f.- o.ot
-0.4
-----0- 0.36
-I.Z7
1--2.54-0
Dwg. No. A-11.901 MM
NOTES:
l. Ejector pin is centrally located.
2. Tolerances on package height and width represent allowable mold offsets. Dimensions given are
measured at the widest point (parting line).
3. Tolerances, unless otherwise specified, are ± 0.005" (0.13 mm) and ± W.
8-12
PACKAGE INFORMATION
PLASTIC SIP
SPRAGUE PACKAGE DESIGNATOR IUA1
DIMENSIONS IN INCHES
i D60r
003'n I
0118
It
0.500 MIN
0.016
I
0015
0.015
L'
Owg. No. A-14,444IN
DIMENSIONS IN MILLIMETERS
(Based on 1" = 25.4 mm)
r.=4.06~
§I--
45·
tt12.70
2.54--1
0.41
I
0.38
L'
1.27
Dwg. No. A-14,444 MM
NOTE:
1. Transition area from 0.016 to 0.015 is uncontrollable.
8-13
II
NOTES
NOTES
SALES OFFICES
U.S. and Canada
UNITED STATES
ALABAMA
Montgomery Marketing, Inc.
4922-8 Cotton Row
Huntsville 35816
Tel. 205/830-0498
ARIZONA
Techni-Source, Inc.
SUite 11 - 4665 Ash Avenue
Tempe 85282
Tel. 602n30-8093
CALIFORNIA
Sprague Electric Company
SUite 459
15350 Sherman Way
Van Nuys 91406
Tel. 818/994-6500
Sprague Electric Company
Suite 262
211 East Ocean Blvd.
Long Beach 90802
Tel. 213/435-9100
Sprague Electric Company
SUite 400 - 27001 la paz Road
Mission Viejo 92691
Tel. 714/831).1740
GEORGIA
Sprague Electric Company
5696 Peachtree Parkway
Norcross 30092
Tel. 404/263-3715
Montgomery Marketing, Inc.
3000 Northwoods Parkway
Suite 245
Norcross 30071
Tel. 404/447-6124
ILLINOIS (Northern)
Sumsr, Inc.
1675 Hicks Road
Roiling Meadows 60008
Tel. 312/991-8500
(Southern)
EPllnc.
Suite 201 - 103 W lockwood
51. louis. MO 63119 - 2915
Tel. 314/962-1411
INDIANA
Sprague Electric Company
SUite 290 - 8200 Haverstick Road
Indianapolis 46240
Tel. 3171253-4247
SAl Marketing Corporation
5650 Callo Onve
SUite 103
Indianapolis 46226
Tel. 3171545-1010
Jones & McGeoy Sales, Incorporated
Suite 250
IOWA
801 Park Center Drive
J. R. Sales Engineering, Inc.
Santa Ana 92705
1930 SI. Andrews, N E.
Tel. 714/547-6466
Cedar Rapids 52402
Tel. 818/244-9884
Tel. 319/393-2232
(San Olego)
KANSAS
Miner Associates, Inc.
EPllnc.
Suite 117 -10721 Treena Street
9016 West B3rd Street
San Diego 92131 - 1009
Overland Park 66204
Tel. 619/566-9891
Tel. 913/642·9118
(Northern)
Sprague Electric Company
KENTUCKY
Suite 155
EPI Southwest
19925 Stevens Creek Blvd.
6069 Old Canton Road
Cupertino 95014
Suite 214
Tel. 408/973-7878
Jackson. MS 39211
Tel. 601/856-6251
Sprague Electric Company
SAl Marketing Corporation
300 Orchard City Drive
SUite 200
Campbell 95008
821 Corporate Drive
Tel. 408/374-1017
Lexington 40503
Criterion Sales
Tel. 606/224-4230
3350 Scott Blvd
BUilding 44
MARYLANO
Santa Clara 95054 - 3120
Trinkle Sales Inc.
Tel. 408/988-6300
P.O. Box 5320
Cherry HIli. NJ 08034 - 0460
Tel. 6091795-4200
COLORADO
William J. Purdy Associates
MASSACHUSETTS
6635 South Dayton #300
New England Technical Sales Corp.
Englewood 80111
101 Cambridge Street
Tel. 303/790·2211
Burlington 01803
Tel. 617/272-0434
CONNECTICUT
Sprague Electric Company
88 Main Street Soulh
Sou1hbury 06488
Tel. 203/264-9595
MICHIGAN
Sprague Electric Company
Suite 3 - 2750 Carpenter Road
Ann Arbor 48104
Tel. 313/971-7780
New England Technical Sales Corp.
120 Hartford Turnpike South
PO. Box 578
Wallingford 06492 - 0578
Tel. 203/284-8300
SAl Marketing Corporation
101 North Alloy Drive
Fenton 48430
Tel. 313n50-1922
DIST. OF COLUMBIA
Trinkle Sales Inc.
P.O Box 5320
Cherry HIli. NJ 08034 Tol.609n95-4200
0460
FLORIDA
Sprague Electric Company
14021·8 North Dale Mabry
Tampa 33618
Tol.813/962-1882
Electramark Florida, Inc.
1325 Snell Isle Blvd. N.E.
51. Petersburg 33704
Tol. 813/894-2299
MINNESOTA
HMR,lnc.
9065 Lyndale Ave. South
Minneapolis 55420 - 3520
Tel. 612/8811-2122
NEBRASKA
J. R. Sales Engineering, Inc.
1930 St. Andrews, N E
Cedar RapIds, Iowa 52402
Tel. 319/393-2232
TENNESSEE (Eastern)
Montgomery Marketlng, Inc.
4922·8 Conon Row
Huntsville, AL 35816
Tel. 205/830-0498
NEW HAMPSHIRE
New England Technical Sales Corp.
101 Cambridge Street
Burlington, MA 01803
Tel. 617/272-0434
(Western)
EPI Southwest
6069 Old Canton Road
Suite 241
Jackson, MS 39211
Tel. 601/856-6251
NEW JERSEY (Northern)
Astrorep, Inc.
P.O. Box 1612
Wayne 07470 - 0701
Tel. 201/696-8200
(Southern)
Trinkle Sales Inc.
PO. Box 5320
Cherry HIli 08034 - 0460
Tel.609n95·4200
NEW YORK (Downstate)
Astrorep, Inc.
103 Cooper Street
Babylon 11702
Tel. 516/422-2500
(Upstate)
Ossmann Associates, Inc.
6666 Old Collamer Road
East Syracuse 13057
Tel. 315/437-7052
Ossmann Associates, Inc.
1020 Lehigh Station Road
Henrietta 14467
Tel. 716/359-1200
NORTH CAROLINA
Sprague Electric Company
9741·M Southern PlRe Blvd
Charlotte 28217
Tel. 704/527-1306
Montgomery Marketing, Inc.
1200 Tnmly Road
Raleigh 27607
Tel. 919/851-0010
TEXAS
Sprague Electric Company
Suite 220
9319 LBJ Freeway
Dallas 75243 - 3403
Tel. 2141235-1256
Sprague Electric Company
SUite 350W - 1106 Clayton lane
Austm 78723 - 1033
Tel. 512/458-2514
UTAH
William J. Purdy Associates
6635 South Dayton #300
Englewood, CO 60111
Tel. 303/790-2211
VIRGINIA
Trinkle Sales Inc.
P.O. Box 5320
Cherry Hill. NJ 08034 - 0460
Tel. 609/795-4200
WASHINGTON
Sprague Electric Company
Suite L
16209 S.E. McGillivray Blvd
Vancouver 98684
Tel. 206/892-0361
WISCONSIN
Sumer, Inc.
350 Bishop Way
Brookfield 53005
Tel. 4141784·6641
PUERTO RICO
OHIO
SAl Marketing Corporation
3645 Warrensville Center Road. #122
Shaker Heights 44122
Tel. 216n51-·3633
SAl Marketing Corporation
1631 Northwest Prof. Bldg., #104
Columbus 43220
Tel. 614/451-0778
SAl Marketing Corporation
270 Regency Ridge, #202
Dayton 45459
Tel. 513/435-3181
OREGON
Sprague Electric Company
Suite L
16209 S.E McGillivray Boulevard
Vancouver, WA 98664 - 9025
Tel. 503/225-0493
MISSISSIPPI
EPI Southwest
6069 Old Canton Road
Suite 214
Jackson 39211
Tel. 601/856-6251
PENNSYLVANIA
Trinkle Sales Inc.
P.O Box 5320
Cherry HIlI. NJ 08034 - 0460
Tol. Phlla. 215/922-2080
MISSOURI
EPllnc.
Suite 201 - 103 W. lockwood
St. LoUIS 63119 - 2915
Tol.314/962·1411
SOUTH CAROLINA
Montgomery Marketing, Inc.
1200 Trinity Road
Raleigh. NC 27607
Tol. 919/851-0010
Electronic Sales Associates
Calle 203 GO·11
Country Club 3rd Ext.
Rio Piedras
Tel. 809n62-6707
CANADA
Sprague Electric of Canada, ltd.
49 Bertal Road
Toronto. Ontario M6M 4M7
Tel. 416n66-6123
Vitel Electronics
2235 One Sime
La Chine, Quebec H8T 9Z7
Tel. 5141636-5951
Vltel Electronics
Suite 309
4019 Carling Avenue
Kanata. Onl81io K2K 2A3
Tel. 6131592-0090
Vitel Electronics
Suite 180
5945 Airport Road
Mississaugo. OntaTiO L4V 1R9
Tol. 416/676-9720
Vitel Electronics
SUite 324
10601 Southport Road, SW
Calgary. Alberta T2W 3M6
Tel. 403/278·5833
SALES OFFICES
Asia
Hong Kong
Japan
Korea
Singapore
Taiwan
Sprague Asia Ltd., G.P.O. Box 4289, Hong Kong, Tel. 0-283188
Sprague Japan KK, Shinjuku KB Building, 11-3, Nishi-Shinjuku 6-Chbme, Shinjuku-Ku,
Tokyo 160, Japan, Tel. (03) 348-5221
Technomil Ltd., Sprague Korea Branch, 4th FI., Daiyoung Building, 44-1, Voido-Dong,
Voung Dung Po-Ku, Seoul, Korea, Tel. (2) 783-9784
Sprague Electric Private Ltd., Singapore Office, 10th Floor, 450/452 Inchcape House,
Alexandra Road, Singapore 0511, Tel. 475-1826
Sprague Taiwan Branch, Technomil Ltd., Room 805, No. 142, Chung Hsiao East Road,
Sec. 4, Taipei, Taiwan, Tel. 771-9582
Europe and the Mideast
Austria
Benelux
France
Germany
U.K.
Italy
Sweden
Swi tzerl and
Spain
Portugal
Denmark
Finland
Norway
East Germany
Hungary
Yugoslavia
Other Eastern
Contries
Israel
Turkey
Egypt
South Africa
Sprague EI ektroni k GmbH, Hai ner Weg 48, D-6000 Frankfurt 70,
Tel 69-609005-0
Distributor: Elbatex GmbH, Eitnerg. 6, A-1232 Wien, Tel 0222/86-32-11-0
Sprague Benel ux, Excel si orl aan 21, Bus 3, B-1930 Zaventem,
Tel Belgium 02-721 4860
Sprague France S.A. R. L., 3 rue Cami II e Desmoul ins, F-94230 Cachan,
Tel 1-4547 6600
Sprague Elektroni k GmbH, Hai ner Weg ,48, D-6000 Frankfurt 70,
Tel 69-609005-0
Sprague Electric (UK) Ltd, Airtech 2, Jenner Rd, Fleming Way, Crawley,
West Sussex RH10 2YQ, Tel 0293-517878
Sprague Italiana S.p.a., Via G. de Castro 4, 1-20144 Milano, Tel 02-498 ~8 91
Sprague Italiana S.p.a., Via Constantino Maes 82, 1-00162 Roma,
Tel 06-832 11 62
Sprague Ital iana S.p.a., Corso G. Ferraris 110, 1-20129 Tori no, Tel 011-5066 33
Sprague Scandi navi a AB, Sollentunavagen 141, Box 802, S-19128 Soil entuna,
Tel 08-92 05 95
Sprague Worl d Trade. Corp., 18 avo Loui s Casa'i, CH-1209 Geneva, Tel 022-9840 21
Distributor: Telion AG, Albisriederstr. 232, CH-8047 Zurich, Tel 01-4931515
Saenger S.A., Avda Diagonal 376-378, E-Barcelona 08037, Tel 033-137300
Saenger S.A., Hilarion Eslava 47, 15 Madrid, Spain, Tel 01-2445807
Niposom, Rua Casimiro Freire 9A, P-1900 Lisboa, Tel 351-1896610
Exatec Electronic, Dortheavej 1-3, OK-Copenhagen NV 2400, Tel 1-191022
Field Oy, Niittylanpolku 10, SF-00620 Helsinki, Tel 07571011
Hefro Elektronikk A/S, Haavard Martinsens Vei 19, P.O. Box 6, Haugenstl,la,
N-0915 Oslo 9, Tel 47-2-107300
Oi pI. Ing. Stoits GmbH, Nordbahnstrasse 44, A-I 020 Wien, Tel 222-;;14 71 37
Apical S.A., Bahnstr. 25, CH-8603 Schwerzenbach, Tel 01-8252526
Bel ram S.A., 83 avenue des Mi mosas, B-1150 Brussel s, Tel 027-34 33 32
Sprague Worl d Trade Corp., 18 avo Loui s Casa'i, CH-1209 Geneva, Tel 022-984021
Racom Electronics Co Ltd, 7 Kehilat Saloniki St., P.O. Box 21120
IL-Tel Aviv 61210, Tel 03-491922
Kapman Komandit, Plastic Han No 5-6, Yanikkqpi Sokak, P.O. Box 158,
Beyogl u, TR-Istanbul, Tel 011 55 52 77
International Engineering Associates, 24 Hussein Hegazi street, Kasr-el-Eini,
Cai ro, Egypt, Tel 202-3541641
Allied Electric (Pty), P.O. Box 6387, ZA-Ounswart 1508, Tel 011-528661
In the construction of the components described, the full intent of the
specification will be met. The Sprague Electric Company, however, reserves
the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the design of its products. Components made under military approvals will be in accordance
with the approval requirements.
The information included herein is believed to be accurate and reliable.
However, the Sprague Electric Company assumes no responsibility for its
use; nor for any infringements of patents or other rights of third parties which
may result from its use.
Source Exif Data:
File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.3 Linearized : No XMP Toolkit : Adobe XMP Core 4.2.1-c041 52.342996, 2008/05/07-21:37:19 Create Date : 2017:06:25 14:13:24-08:00 Modify Date : 2017:06:25 16:52:16-07:00 Metadata Date : 2017:06:25 16:52:16-07:00 Producer : Adobe Acrobat 9.0 Paper Capture Plug-in Format : application/pdf Document ID : uuid:b4494805-456a-c64c-a79f-3c60f9361740 Instance ID : uuid:2b0accb7-52de-7546-9172-200b21430aaf Page Layout : SinglePage Page Mode : UseNone Page Count : 225EXIF Metadata provided by EXIF.tools