1988_Motorola_Thyristor_Device_Data 1988 Motorola Thyristor Device Data

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Theory and Applications
(Chapters 1 thru 9)

The information in this book has been carefully
checked and is believed to be accurate; however,
no responsibility is assumed for inaccuracies.
Motorola reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Motorola does not assume any liability arising out of the application or
use of any product or circuit described herein; neither does it convey any license under its patent rights
nor the rights of others. Motorola and ® are registered trademarks of Motorola, Inc. Motorola, Inc.
is an Equal Employment Opportunity/Affirmative Action Employer.
Motorola, Inc. general policy does not recommend
the use of its components in life support applications
wherein a failure or malfunction of the component
may directly threaten life or injury. Per Motorola
Terms and Conditions of Sale, the user of Motorola
components in life support applications assumes all
risks of such use and indemnifies Motorola against
all damages.

Selector Guide •

Data Sheets •

Outline Dimensions
and Leadform Options

Index and
Cross Reference

Chipscrete, Designer's, Switch mode, Thermopad, Thermowatt, TMOS and Unibloc are trademarks of Motorola Inc.
Kapton and Teflon are registered trademarks of E.I. Dupont.

•

•
•

®

MOTOROLA

THYRISTOR DATA
Prepared by
Technical Information Center

Preface
This manual is intended to give users of thyristors basic information on the product including
applications, theory, and data sheets on the broad line available from Motorola.
Motorola has a long history of supplying high quality thyristors in large volume to the power
supply, industrial, and lighting markets. Being the leading supplier of power devices in the world,
we know how to serve the customers needs.

Series B
©MOTOROLA INC., 1988
Previous Printing © 1985
All Rights Reserved

Printed in U.S.A.

MOTOROLA THYRISTOR DEVICE DATA

Theory and Applications
(Chapters 1 thru 9)

Page
Introduction . . . . . . . . . . . . . . . . . ....... .
Chapter 1: Symbols and Terminology . . . . . . .
Chapter 2: Theory of Operation . . . . . . . ... .
Basic Behavior . . . . . . . . . . . . . . . . . . . . . .
Switching Characteristics. . . . . . . . . . . . . . . .
False Triggering. . . . . . . . . . . . . . . . . . . .. .
Theory of SCR Power Control . . . . . . . . . .. .
Triac Theory . . . . . . . . . . . . . . . . . . . . . . . .
Methods of Control. . . . . . . . . . . . . . . . . .. .
Zero Point Switching Techniques ......... .
Chapter 3: Thyristor Drivers and Trigger . ... .
Pulse Triggering of SCRs . . . . . . . . . . . . . . .
Current Pulse Triggering . . . . . . . . . . . . . . . .
Capacitance Charge Triggering . . . . . . . . .. .
Effects of Temperature . . . . . . . . . . . . . . . . .
Reducing di/dt Effects. . . . . . . . . . . . . . . .. .
Snubbing a Thyristor . . . . . . . . . . ....... .
Protecting Sensitive Gate SCRs . . . ....... .
Using Triac Drivers. . . . . . . . . . . . . . . . . . ..
Zero Cross vs Non-Zero Cross Triac Drivers .. .
The Unijunction Transistor. . . . . . . . . ..... .
Programmable Unijunction Transistors ...... .
Silicon Bilateral Switch . . . . . . . . . . . . . . . . .
Chapter 4: New Thyristor Technologies. . . . . .
The SIDAC, A New High Voltage Bilateral
Trigger . . . . . . . . . . . . . . . . . . . . . . . . ..
GTO Devices . . . . . . . . . . . . . . . . . . . . . . .
Chapter 5: SCR Characteristics . ..........
SCR Turn-Off Time t q . . . . . . . . . . . . . . . . . .
Parameters Affecting t q . . . . . . . . . . . . . . . ..
Characterizing SCRs for Crowbar Applications .
Characterizing SCRs as Line-Type Modulators.
Parallel Connected SCRs . . . . . . . . . . . . . ..
RFI Suppression in Thyristor Circuits. . . . . . ..
Chapter 6: Applications . . . . . . . . . . . . . . . . .
Phase Control with Thyristors . . . . . . . . . . . . .
Motor Control . . . . . . . . . . . . . . . . . . . . . ..
Phase Control with Trigger Devices .........
Cycle Control with Optically Isolated
Triac Drivers . . . . . . . . . . . . . . . . . . . . ..
AC Power Control with Solid-State Relays ....

ii

1-1-1
1-2-1
1-2-1
1-2-3
1-2-5
1-2-7
1-2-13
1-2-15
1-2-16
1-3-1
1-3-1
1-3-2
1-3-4
1-3-5
1-3-7
1-3-9
1-3-11
1-3-14
1-3-19
1-3-21
1-3-30
1-3-35
1-4-1
1-4-1
1-4-11
1-5-1
1-5-1
1-5-6
1-5-11
1-5-19
1-5-24
1-5-28
1-6-1
1-6-1
1-6-2
1-6-9
1-6-13
1-6-17

Triacs and Inductive Loads . . . . . . . . . . . . ..
Interfacing Digital Circuits to AC Loads ..... .
DC Motor Control with Thyristor Applications. . .
Unijunction Transistor Applications . . . . . ... .
Heater Control. . . . . . . . . . . . . . . . . . . ... .
Light Dimmer . . . . . . . . . . . . . . . . . . . . . . .
Voltage Regulation. . . . . . . . . . . . . . . . . . ..
Timer Circuits . . . . . . . . . . . . . . . ....... .
Programmable Unijunction Transistor (PUT)
Applications. . . . . . . . . . . . . . . . . . . . . . .
VC Ramp Generator. . . . . . . . . . . . . . . . . . .
Low Frequency Divider. . . . . . . . . . . . . ... .
Long Duration Timer . . . . . . . . . . . . . . . . . . .
Phase Control. . . . . . . . . . . . . . . . . . . . . . .
Voltage Regulator . . . . . . . . . . . . . . . . . . . .
Silicon Bilateral Switch (SBS) Applications . . . .
Lamp Dimmer . . . . . . . . . . . . . . . . . . . . . . .
Electronic Crowbar. . . . . . . . . . . . . . . . . . ..
Triac Zero-Point Switch Applications . . . . . . ..
Temperature Control. . . . . . . . . . . . . . . . . . .
Relay-Contact Protection. . . . . . . . . . . . . . . .
Chapter 7: Mounting Techniques for Thyristors
Surface Preparation . . . . . . . . . . . . . . . . . . .
Thermal Compounds . . . . . . . . . . . . . . . .. .
Insulation Considerations. . . . . . . . . . . .... .
Fastening Techniques . . . . . . . . . . . . . . . . . .
Thermal System Evaluation. . . . . . . . . . . . . .
Chapter 8: Reliability and Quality . . . . . . . . . .
Thyristor Construction Through A Time Tested
Design and Advanced Processing Methods. .
In-Process Controls and Inspections . . . . . . . .
Reliability Tests . . . . . . . . . . . . . . . . . . . . . .
Stress Testing - Power Cycling and Thennal
Shock . . . . . . . . . . . . . . . . . . . . . . . . . . .
Environmental Testing . . . . . . . . . . . . . . . . .
Mechanical Testing . . . . . . . . . . . . . . . . . . .
Chapter 9: Using Thyristor Die for Hybrid
Assembly . . . . . . . . . . . . . . . . . . . . . . . . .
Die Characteristics. . . . . . . . . . . . . . . . . .. .
Electrical Characteristics. . . . . . . . . . . . . .. .
Die Backing . . . . . . . . . . . . . . . . . . . . . .. .
Encapsulation . . . . . . . . . . . . . . . . . . . . . . .
Handling and Shipping . . . . . . .......... .
Appendices . . . . . . . . . . . . . . . . . . . . . . .. .

Page
1-6-20
1-6-24
1-6-33
1-6-37
1-6-44
1-6-44
1-6-46
1-6-47
1-6-48
1-6-48
1-6-49
1-6-50
1-6-50
1-6-51
1-6-52
1-6-52
1-6-53
1-6-55
1-6-56
1-6-57
1-7-1
1-7-1
1-7-2
1-7-5
1-7-7
1-7-11
1-8-1
1-8-4
1-8-4
1-8-5
1-8-6
1-8-8
1-8-9
1-9-1
1-9-1
1-9-1
1-9-2
1-9-2
1-9-2
1-10-1

•

•

INTRODUCTION

Thyristors can take many forms, but they have certain
things in common. All of them are solid state switches
which act as open circuits capable of withstanding the
rated voltage until triggered. When they are triggered,
thyristors become low-impedance current paths and remain in that condition until the current either stops or
drops below a minimum value called the holding level.
Once a thyristor has been triggered, the trigger current
can be removed without turning off the device.
Silicon controlled rectifiers (SCRs) and triacs are both
members of the thyristor family. SCRs are unidirectional
devices where triacs are bidirectional. An SCR is designed
to switch load current in one direction, while a triac is
designed to conduct load current in either direction.
Structurally, all thyristors consist of several alternating
layers of opposite P and N silicon, with the exact structure
varying with the particular kind of device. The load is
applied across the multiple junctions and the trigger current is injected at one of them. The trigger current allows
the load current to flow through the device, setting up a
regenerative action which keeps the current flowing even
after the trigger is removed.
These characteristics make thyristors extremely useful
in control applications. Compared to a mechanical
switch, a thyristor has a very long service life and very

fast turn on and turn off times. Because of their fast reaction times, regenerative action and low resistance once
triggered, thyristors can be used as ac power controllers
as well as simply turning devices on and off. Thyristors
are used to control motors, incandescent lights and many
other kinds of equipment.
Although thyristors of all sorts are generally fairly
rugged, there are several points to keep in mind when
designing circuits using them. One of the most important is to respect the devices' rated limits on rate of
change of voltage and current (dv/dt and dildt). If these
are exceeded, the thyristor may be damaged or
destroyed. On the other hand, it is important to provide
a trigger pulse large enough and fast enough to turn
the gate on quickly and completely. Usually the gate
trigger current should be at least three times the minimum turn-on current with a pulse rise time of less than
1 microsecond and a pulse width greater than 10 microseconds. Thyristors may be driven in many different
ways, including directly from transistors or logic families, by optoisolated triac drivers, unijunction transistors (UJTs), programmable unijunction transistors
(PUTs) and silicon bilateral switches (SBSs). These and
other design considerations are covered in this manual.

MOTOROLA THYRISTOR DEVICE DATA
ii

CHAPTER 1
SYMBOLS AND TERMINOLOGY
SYMBOLS
The following are the most commonly used schematic
symbols for thyristors:
name of device

symbol
A o>----__
~""),...-------~...,G
~I-------4.,~I:>j---T~'c"''€':d~'''Wi''lf1!W'1ll1!(~~'U4''t.~~~l'! ~(~'Z;tAr!l"1M1 ~ji>I".~':~><&;"~~

~.~~J~#«:~~~~~~~~~~~~~~~~"~<'

MOTOROLA THYRISTOR DEVICE DATA
1-1-2

CHARACTERISTICS
Terminology

Symbol

Definition

PEAK FORWARD BLOCKING CURRENT (SCR)

IORM

The maximum value of current which will flow at
VORM and specified temperature.

PEAK REVERSE BLOCKING CURRENT (SCR)

IRRM

The maximum value of current which will flow at
VRRM and specified temperature.

PEAK BLOCKING CURRENT (TRIAC)

IORM

The maximum value of current which will flow for
either polarity of VORM and at specified
temperature.

PEAK ON-STATE VOLTAGE

VTM

The maximum voltage drop across the terminals at
stated conditions.

GATE TRIGGER CURRENT

IGT

The maximum value of gate current required to
switch the device from the off state to the on state
under specified conditions.

GATE TRIGGER VOLTAGE

VGT

The gate dc voltage required to produce the gate
trigger current.

HOLDING CURRENT

IH

The value of forward anode current which allows
the device to remain in conduction. Below this value
the device will return to a forward blocking state at
prescribed gate conditions.

CRITICAL RISE OF OFF-STATE VOLTAGE

dv/dt

The minimum value of the rate of rise of forward
voltage which will cause switching from the off
state to the on state.

TURN-ON TIME (SCR)

tgt

The time interval between a specified point at the
beginning of the gate pulse and the instant when
the device voltage (current) has dropped to a specified low value during the switching of an SCR from
the off state to the on state by a gate pulse.

TURN-OFF TIME (SCR)

tq

The time interval between the instant when the SCR
current has decreased to zero 'after external switching of the SCR voltage circuit and the instant when
the thyristor is capable of supporting a specified
wave form without turning on.

OPERATING JUNCTION TEMPERATURE

The junction temperature of the device as a result
of ambient and load conditions.

STORAGE TEMPERATURE

Tstg

The temperature at which the device may be stored
without harm.

CASE TEMPERATURE

TC

The temperature of the device case under specified
conditions.

AMBIENT TEMPERATURE

The air temperature measured below a device in an
environment of substantially uniform temperature,
cooled only by natural air currents and not materially affected by radiant and reflective surfaces.

MOTOROLA THYRISTOR DEVICE DATA
1-1-3

•

CHARACTERISTICS
Symbol

Terminology

•

Definition

THERMAL RESISTANCE, CASE-TO-AMBIENT

R/iCA

The thermal resistance (steady-state) from the device case to the ambient.

THERMAL RESISTANCE, JUNCTION-TOAMBIENT

RIIJA

The thermal resistance (steady-state) from the
semiconductor junction(s) to the ambient.

THERMAL RESISTANCE, JUNCTION-TO-CASE RIIJC

The thermal resistance (steady-state) from the
semiconductor junction(s) to a stated location on
the case.

THERMAL RESISTANCE, JUNCTION-TOMOUNTING SURFACE

RIIJM

The thermal resistance (steady-state) from the
semiconductor junction(s) to a stated location on
the mounting surface.

TRANSIENT THERMAL IMPEDANCE,
JUNCTION-TO-AMBIENT

ZIIJA(t)

The transient thermal impedance from the semiconductor junction(s) to the ambient.

TRANSIENT THERMAL IMPEDANCE,
JUNCTION-TO-CASE

ZIIJC(t)

The transient thermal impedance from the semiconductor junction(s) to a stated location on the
case.

MOTOROLA THYRISTOR DEVICE DATA
1-1-4

Unijunction Transistor Nomenclature

Symbol

Definition

Symbol

Emitter current.
Emitter reverse current. Measured between emitter and base-two at a specified voltage, and base-one open-circuit.
Peak point emitter current. The maximum emitter current that can flow without allowing the UJT to go into the negative resistance region. Peak point is the
lowest current on the emitter characteristic where:

VEBl

Emitter to base-one voltage.

VEB1(sat)

Emitter saturation voltage. Forward
voltage drop from emitter to base-one
at a specified emitter current larger than
IV and specified interbase voltage.

Vv

Valley point emitter voltage. The voltage at which the valley point occurs with
a specified VB2Bl'

VOBl

Base-one peak voltage. The peak voltage measured across a resistor in series
with base-one when the unijunction
transistor is operated as a relaxation oscillator in a specified circuit.

dVEBl = 0
diE
Valley point emitter current. The current
flowing in the emitter when the device
is biased to the valley point. Valley point
is the second lowest current on the emitter characteristic where:

Interbase resistance temperature coefficient. Variation of resistance between
B2 and Bl over the specified temperature range and measured at the specific
interbase voltage and temperature with
emitter open-circuited.

Interbase resistance. Resistance between base-two and base-one measured at a specified interbase voltage.
Voltage between base-two and baseone. Also called interbase voltage.
IB2 (mod)

Peak point emitter voltage. The maximum voltage seen at the emitter before
the UJT goes into the negative resistance region.
VD

•

Intrinsic standoff ratio. Defined by the
relationship:
Vp - VD
71 = VB2Bl

dVEBl = 0
diE
rBB

Definition

Interbase modulation current. B2 current modulation due to firing. Measured
at a specified interbase voltage, emitter
current and temperature.

Forward voltage drop of the emitter
junction. Also called VF(EB1) or VF.

~"'.;;r:.'i0".:i:",r·."'Miiiwff.~"",....~",'!(!':i..(I.,_"i·.'.'···'·f.h·V,<.,,;t¥. J.,ik,;.':,,"f~'~~"'Jli3.;,;/A~;,;ry;.!%.~~...;t'A~
~. ;'f¥J.f:¥i#':%J;.' "* 1~~J!¥:.~f('~«<~,:F.~-t~w..~'~ ~~ .~. >(.1'.... :>"!"~~<.~':t...f<'m~· ~.i!Q~~i·,*~~":
.~ .
"
•.

MOTOROLA THYRISTOR DEVICE DATA
1-1-5

•

MOTOROLA THYRISTOR DEVICE DATA
1-1-6

CHAPTER 2
THEORY OF THYRISTOR OPERATIONS

To successfully apply thyristors, an understanding of
their characteristics, ratings, and limitations is imperative. In this chapter, significant thyristor characteristics,
the basis of their ratings, and their relationship to circuit
design are discussed.
Several different kinds of thyristors are shown in Table
2.1. Silicon Controlled Rectifiers (SCRs) are the most
widely used as power control elements; triacs are quite
popular in lower current (under 40 A) ac power applications. Diacs, SUSs and SBSs are most commonly used
as gate trigger devices for the power control elements.

senti ally the same for any operating quadrant of triac
because a triac may be considered as two parallel SCRs
oriented in opposite directions. Figure 2.1(a) shows the
schematic symbol for an SCR, and Figure 2.1(b) shows
the P-N-P-N structure the symbol represents. In the twotransistor model for the SCR shown in Figure 2.1 (c), the
interconnections of the two transistors are such that regenerative action occurs. Observe that if current is injected into any leg ofthe model, the gain ofthe transistors
(if sufficiently high) causes this current to be amplified
in another leg. In order for regeneration to occur, it is
necessary for the sum of the common base current gains
(a) of the two transistors to exceed unity. Therefore, because the junction leakage currents are relatively small
and current gain is designed to be low at the leakage
current level, the PNPN device remains off unless external current is applied. When sufficient trigger current is
applied (to the gate, for example, in the case of an SCR)
to raise the loop gain to unity, regeneration occurs and
the on-state principal current is limited primarily by external circuit impedance. If the initiating trigger current
is removed, the thyristor remains in the on state, providing the current level is high enough to meet the unity
gain criteria. This critical current is called latching current.

Table 2.1. Thyristor Types

*JEDEC Titles
Reverse Blocking Diode
Thyristor
Reverse Blocking Triode
Thyristor

Popular Name., Types
tFour Layer Diode, Silicon
Unilateral Switch (SUS)
Silicon Controlled Rectifier
(SCR)

Reverse Conducting Diode
Thyristor

tReverse Conducting Four
Layer Diode

Reverse Conducting Triode
Thyristor

Reverse Conducting SCR

Bidirectional Triode Thyristor

Triac

Turn-Off Thyristor

Gate Turn Off Switch (GTO)

In order to turn off a thyristor, some change in current
must occur to reduce the loop gain below unity. From
the model, it appears that shorting the gate to cathode
would accomplish this. However in an actual SCR structure, the gate area is only a fraction of the cathode area
and very little current is diverted by the short. In practice,
the principal current must be reduced below a certain
level, called holding current, before gain falls below unity
and turn-off may commence.

*JEDEC i. an acronym for the Joint Electron Device Engineering Councils,
an industry standardization activity co-sponsored by the Electronic
Industries Association lElA) and the Nstional Electrical Manufacturers
Association INEMA).
tNot generally available.

In fabricating practical SCRs and Triacs, a "shorted
emitter" design is generally used in which, schematically,
a resistor is added from gate to cathode or gate to MT1.
Because current is diverted from the N-base through the
resistor, the gate trigger current, latching current and
holding current all increase. One of the principal reasons
for the shunt resistance is to' improve dynamic performance at high temperatures. Without the shunt, leakage
current on most high currentthyristors could initiate turnon at high temperatures.

Before considering thyristor characteristics in" detail, a
brief review of their operation based upon the common
two-transistor analogy of an SCR "is in order.

BASIC BEHAVIOR
The bistable action of thyristors is readily explained by
analysis of the structure of an SCR. This analysis is es-

MOTOROLA THYRISTOR DEVICE DATA
1-2-1

•

Sensitive gate thyristors employ a high resistance
shunt or none at all; consequently, their characteristics
can be altered dramatically by use of an external resistance. An external resistance has a minor effect on most
shorted emitter designs.
ANODE

•

~~J

ANODE

CATHODE
(a)

IS1
IC2

ANODE

I N

P
N
GATE

creased, however, the ability of a thyristor to support
applied voltage is reduced and there is a certain value
of gate current at which the behavior of the thyristor
closely resembles that of a rectifier. Because thyristor
turn-on, as a result of exceeding the breakover voltage,
can produce high instantaneous power dissipation nonuniformly distributed over the die area during the
switching transition, extreme temperatures resulting in
die failure may occur unless the magnitude and rate of
rise of principal current (di/dt) is restricted to tolerable
levels. For normal operation, therefore, SCRs and triacs
are operated at applied voltages lower than the breakover voltage, and are made to switch to the on state by
gate signals high enough to assure complete turn-on

GATE

P
N

CATHODE

CATHODE

~~-+------~------~---r----V

Ig4

(b)

Ig3

Ig2

Ig1

=

0

Figure 2.2. Thyristor Characteristics Illustrating
Breakover as a Function of Gate Current

Figure 2.1. Two-transistor analogy of an SCR:
la) schematic symbol of SCR; Ib) P-N-P-N structure
represented by schematic symbol; Ic) two-transistor
model of SCR.
Junction temperature is the primary variable affecting
thyristor characteristics. Increased temperatures make
the thyristor easier to turn on and keep on. Consequently,
circuit conditions which determine turn-on must be designed to operate at the lowest anticipated junction temperatures, while circuit conditions which are to turn off
the thyristor or prevent false triggering must be designed
to operate at the maximum junction temperature.
Thyristor specifications are usually written with case
temperatures specified and with electrical conditions
such that the power dissipation is low enough that the
junction temperature essentially equals the case temperature. It is incumbent upon the user to properly account for changes in characteristics caused by the circuit
operating conditions different from the test conditions.
TRIGGERING CHARACTERISTICS
Turn-on of a thyristor requires injection of current to
raise the loop gain to unity. The current can take the form
of current applied to the gate, an anode current resulting
from leakage, or avalanche breakdown of a blocking junction. As a result, the breakover voltage of a thyristor can
be varied or controlled by injection of a current at the
gate terminal. Figure 2.2 shows the interaction of gate
current and voltage for an SCR.
When the gate current Ig is zero, the applied voltage
must reach the breakover voltage of the SCR before
switching occurs. As the value of gate current is in-

independent of the applied voltage. On the other hand,
diacs and other thyristor trigger devices are designed
to be triggered by anode breakover. Nevertheless they
also have di/dt and peak current limits which must be
adhered to.
A triac works the same general way for both positive
and negative voltage. However since a triac can be
switched on by either polarity of the gate signal regardless of the voltage polarity across the main terminals, the
situation is somewhat more complex than for an SCR.
The various combinations of gate and main terminal
polarities are shown in Figure 2.3. The relative sensitivity
depends on the physical structure of a particular triac,
MT2(+1
QUADRANT II

QUADRANT I

MT2( +), G( -)

MT2(+I.G(+)

G(-) - - - - - - - - - \ - - - - - - G(+)

QUADRANT III

QUADRANT IV

MT2(-), G(-)

MT2(-), G(+)

MT2H

Figure 2.3. Quadrant Definitions for a Triac

"_IIII.'~
MOTOROLA THYRISTOR DEVICE DATA
1-2-2

but as a rule, sensitivity is highest in quadrant I and quadrant IV is generally considerably less sensitive than the
others.
Gate sensitivity of a triac as a function of temperature
is shown in Figure 2.4.
30

t-.....

I'-.

<;: 20
I-

Z

w

a:
a:

::::>
(.)

10

a:

w

"r---.,

r---.....
r-....

Cl
Cl

~

~OLTA~E 1~ Vdc

.........

1 100
I-

r-......

i'--

r-..:--,

......
I'-....
.........

w

!;(
Cl

1-

,.:.

~

OUfDRANi
3

300

OFF!STATE
=
ALL QUADRANTS

i'--

E.

erates like a remote base transistor having a gain which
is generally about 0.5. When high gate drive currents are
used, substantial dissipation could occur in the SCR or a
significant current could flow in the load; therefore, some
means usually must be provided to remove the gate signal during the reverse blocking phase.

~

!Vl.--::

Z

::::>

70
50 I"

w

30

w

a:
a:

(.)

...........

!;(

"-

Cl

~

~ k"

""~
i!
~

r-....

>
r"--,.

""" """'"

-80 -60 -40 -20
20
40
60
TJ, JUNCTION TEMPERATURE lOCI

~

80

100

10
7

I 1TT

I
!

i

I\.

120

'TIm

1-

?FF.STATE VOLTAGE

= 12 V

--1'-'----

..........

1\

r" r-f..,

I

--

r-f..,

= -55OC

TJ

I----

I I

1

25°C

l000C

---

Figure 2.4. Typical Triac Triggering Sensitivity in the
Four Trigger Quadrants

3

0.2

0.5

5
10
20
PULSE WIDTH Ip.sl

50

100

200

Figure 2.5. Typical Behavior of Gate Trigger Current as
Pulse Width and Temperature Are Varied

Since both the junction leakage currents and the current gain of the "transistor" elements increase with temperature, the magnitude of the required gate trigger current decreases as temperature increases. The gate which can be regarded as a diode - exhibits a decreasing
voltage drop as temperature increases. Thus it is important that the gate trigger circuit be designed to deliver
sufficient current to the gate at the lowest anticipated
temperature.
It is also advisable to observe the maximum gate current, as well as peak and average power dissipation ratings. Also in the negative direction, the maximum gate
ratings should be observed. Both positive and negative
gate limits are often given on the data sheets and they
may indicate that protective devices such as voltage
clamps and current limiters may be required in some
applications. It is generally inadvisable to dissipate power
in the reverse direction.
Although the criteria for turn-on have been described
in terms of current, it is more basic to consider the thyristor as being charge controlled. Accordingly, as the duration of the trigger pulse is reduced, its amplitude must
be correspondingly increased. Figure 2.5 shows typical
behavior at various pulse widths and temperatures.
The gate pulse width required to trigger a thyristor also
depends upon the time required for the anode current to
reach the latching value. It may be necessary to maintain
a gate signal throughout the conduction period in applications where the load is highly inductive or where the
anode current may swing below the holding value within
the conduction period.
When triggering an SCR with a dc current, excess leakage in the reverse direction normally occurs if the trigger
signal is maintained during the reverse blocking phase
of the anode voltage. This happens because the SCR op~~~~t;,ciV··'~~
~.I':<."H"~"-y.~.. ~'ill;,;,:"

\

"

LATCH AND HOLD CHARACTERISTICS
In order for the thyristor to remain in the on state when
the trigger signal is removed, it is necessary to have sufficient principal current flowing to raise the loop gain to
unity. The principal current level required is the latching
current, Il. Although triacs show some dependency on
the gate current in quadrant II, the latching current is
primarily affected by the temperature on shorted emitter
structures.
In order to allow turn off, the principal current must be
reduced below the level of the latching current. The current level where turn off occurs is called the holding current, IH. Like the latching current, the holding current is
affected by temperature and also depends on the gate
impedance.
Reverse voltage on the gate of an SCR markedly increases the latch and hold levels. Forward bias on thyristor gates may significantly lower from the values
shown in the data sheets since those values are normally
given with the gate open. Failure to take this into account
can cause latch or hold problems when thyristors are
being driven from transistors whose saturation voltages
are a few tenths of a volt.
Thyristors made with shorted emitter gates are obviously not as sensitive to the gate circuit conditions as
devices which have no built-in shunt.

SWITCHING CHARACTERISTICS
When triacs or SCRs are triggered by a gate signal, the
turn-on time consists of two stages: a delay time, td, and
a rise time, t r, as shown in Figure 2.6. The total gate
controlled turn-on time, tgt, is usually defined as the time
interval between the 50 percent point of the leading edge

.

MOTOROLA THYRISTOR DEVICE DATA
1-2-3

,

.

•

level. Reverse recovery time (trr ) is usually measured
from the point where the principal current changes polarity to a specified point on the reverse current waveform
as indicated in Figure 2.7. During this period the anode
and cathode junctions are being swept free of charge so
that they may support reverse voltage. A second recovery
period, called the gate recovery time, tgr, must elapse
for the charge stored in the forward-blocking junction to
recombine so that forward-blocking voltage can be reapplied and successfully blocked by the SCR. The gate recovery time of an SCR is usually much longer than the
reverse recovery time. The total time from the instant
reverse recovery current begins to flow to the start of the
forward-blocking voltage is referred to as circuitcommutated turn-off time t q.
Turn-off time depends upon a number of circuit conditions including on-state current prior to turn-off, rate of
change of current during the forward-to-reverse transition, reverse-blocking voltage, rate of change of reapplied
forward voltage, the gate bias, and junction temperature.
Increasing junction temperature and on-state current
both increase turn-off time and have a more significant
effect than any of the other factors. Negative gate bias
will decrease the turn-off time.

PRINCIPAL
VOLTAGE

•

90% POINT

PRINCIPAL
CURRENT

+---'-

0 ......

CU~~NT
IGT

it!T
50% POINT
50%

o

~

----------

(WAVESHAPES FOR A SENSITIVE LOADI

Figure 2.6., Waveshapes Illustrating Thyristor Turn-On
Time For A Resistive Load
of the gate trigger voltage and 90 percent point of the
principal current. The rise time tr is the time interval required for the principal current to rise from 10 to 90 percent of its maximum value. A resistive load is usually
specified.
Delay time decreases slightly as the peak off-state voltage increases. It is primarily related to the magnitude of
the gate-trigger current and shows a relationship which
is roughly inversely proportional.
The rise time is influenced primarily by the off-state
voltage, as high voltage causes an increase in regenerative gain. Of major importance in the rise time interval
is the relationship between principal voltage and current
flow through the thyristor di/dt. During this time the dynamic voltage drop is high and the current density due
to the possible rapid rate of change can produce localized
hot spots in the die. This may permanently degrade the
blocking characteristics. Therefore, it is important that
power dissipation during turn-on be restricted to safe
levels.
Turn-off time is a property associated only with SCRs
and other unidirectional devices. (In triacs or bidirectional
devices a reverse voltage cannot be used to provide
circuit-com mutated turn-off voltage because a reverse
voltage applied to one half of the structure would be a
forward-bias voltage to the other half.) For turn-off times
in SCRs, the recovery period consists of two stages, a
reverse recovery time and a gate or forward blocking
recovery time, as shown in Figure 2.7.
When the forward current of an SCR is reduced to zero
at the end of a conduction period, application of reverse
voltage between the anode and cathode terminals causes
reverse current flow in the SCR. The current persists until
the time that the reverse current decreases to the leakage

FORWARD

REVERSE

t

dildt~
FORWARD

REVERSE

tgr

i----tq ------I

Figure 2.7. Waveshapes Illustrating Thyristor
Turn-Off Time

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MOTOROLA THYRISTOR DEVICE DATA
1-2-4

For applications in which an SCR is used to control ac
power, during the entire negative half of the sine wave
a reverse voltage is applied. Turn off is easily accomplished for most devices at frequencies up to a few kilohertz. For applications in which the SCR is used to control
the output of a full-wave rectifier bridge, however, there
is no reverse voltage available for turn-off, and complete
turn-off can be accomplished only if the bridge output is
reduced close to zero such that the principal current is
reduced to a value lower than the device holding current
for a sufficiently long time. Turn-off problems may occur
even at a frequency of 60 Hz particularly if an inductive
load is being controlled.
In triacs, rapid application of a reverse polarity voltage
does not cause turn-off because the main blocking junctions are common to both halves of the device. When the
first triac structure (SCR-1) is in the conducting state, a
quantity of charge accumulates in the N-type region as
a result of the principal current flow. As the principal
current crosses the zero reference point, a reverse current
is established as a result of the charge remaining in the
N-type region, which is common to both halves of the
device. Consequently, the reverse recovery current becomes a forward current to the second half of the triac.
The current resulting from stored charge causes the second half of the triac to go into the conducting state in the
absence of a gate signal. Once current conduction has
been established by application of a gate signal, therefore, complete loss in power control can occur as a result
of interaction within the N-type base region of the triac
unless sufficient time elapses or the rate of application
of the reverse polarity voltage is slow enough to allow
nearly all the charge to recombine in the common N-type
region. Therefore, triacs are generally limited to lowfrequency - 60 Hz applications. Turn-off or commutation
of triacs is more severe with inductive loads than with
resistive loads because of the phase lag between voltage
and current associated with inductive loads. Figure 2.8
shows the waveforms for an inductive load with lagging
current power factor. At the time the current reaches zero
crossover (Point A), the half of the triac in conduction
begins to commutate when the principal current falls below the holding current. At the instant the conducting
half of the triac turns off, an applied voltage opposite the
current polarity is applied across the triac terminals (Point
B). Because this voltage is a forward bias to the second
half of the triac, the suddenly reapplied voltage in conjunction with the remaining stored charge in the highvoltage junction reduces the over-all device capability to

B

Figure 2.8. Inductive Load Waveforms

support voltage. The result is a loss of power control to
the load, and the device remains in the conducting state
in absence of a gate signal. The measure of triac turn-off
ability is the rate of rise of the opposite polarity voltage
it can handle without remaining on. It is called commutating dv/dt (dv/dt[c)). Circuit conditions and temperature
affect dv/dt(c) in a manner similar to the way tq is affected
in an SCR.
It is imperative that some means be provided to restrict
the rate of rise of reapplied voltage to a value which will
permit triac turn-off under the conditions of inductive
load. A commonly accepted method for keeping the commutating dv/dt within tolerable levels is to use an RC
snubber network in parallel with the main terminals of
the triac. Because the rate of rise of applied voltage at
the triac terminal is a function of the load impedance and
the RC snubber network, the circuit can be evaluated
under worst-case conditions of operating case temperature and maximum principal current. The values of resistance and capacitance in the snubber are then adjusted
so that the rate of rise of commutating dv/dt stress is
within the specified minimum limit under any of the conditions mentioned above. The value of snubber resistance should be high enough to limit the snubber capacitance discharge currents during turn-on and dampen
the LC oscillation during commutation. The combination
of snubber values having highest resistance and lowest
capacitance that provides satisfactory operation is generally preferred.

FALSE TRIGGERING
Circuit conditions can cause thyristors to turn on in the
absence of the trigger signal. False triggering may result
from:
1) A high rate of rise of anode voltage, (the dv/dt
effect).
2) Transient voltages causing anode breakover.
3) Spurious gate signals.
Static dv/dt effect: When a source voltage is suddenly
applied to a thyristor which is in the off state, it may
switch from the off state to the conducting state. If the
thyristor is controlling alternating voltage, false turn-on
resulting from a transient imposed voltage is limited to
no more than one-half cycle of the applied voltage because turn-off occurs during the zero current crossing.
However, if the principal voltage is dc voltage, the transient may cause switching to the on state and turn-off
could then be achieved only by a circuit interruption.
The switching from the off state caused by a rapid rate
of rise of anode voltage is the result of the internal capacitance of the thyristor. A voltage wavefront impressed
across the terminals of a thyristor causes a capacitancecharging current to flow through the device which is a
function of the rate of rise of applied off-state voltage
(i = C dv/dt). If the rate of rise of voltage exceeds a critical
value, the capacitance charging current exceeds the gate
triggering current and causes device turn-on. Operation

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MOTOROLA THYRISTOR DEVICE DATA
1-2-5

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•

at elevated junction temperatures reduces the thyristor
ability to support a steep rising voltage dv/dt because of
increased sensitivity.
dv/dt ability can be improved quite markedly in sensitive gate devices and to some extent in shorted emitter
designs by a resistance from gate to cathode (or MT1)
however reverse bias voltage is even more effective in
an SCR. More commonly, a snubber network is used to
keep the dv/dt within the limits of the thyristor when the
gate is open.
TRANSIENT VOLTAGES: - Voltage transients which
occur in electrical systems as a result of disturbance on
the ac line caused by various sources such as energizing
transformers, load switching, solenoid closure, contractors and the like may generate voltages which are above
the ratings of thyristors. Thyristors, in general, switch
from the off state to the on state whenever the breakover
voltage of the device is exceeded, and energy is then
transferred to the load. However, unless a thyristor is
specified for use in a breakover mode, care should be
exercised to ensure that breakover does not occur, as
some devices may incur surface damage with a resultant
degradation of blocking characteristics. It is good practice
when thyristors are exposed to a heavy transient environment to provide some form of transient suppression.
For applications in which low-energy, long-duration
transients may be encountered, it is advisable to use thyristors that have voltage ratings greater than the highest
voltage transient expected in the system. The use of voltage clipping cells (MOV or Zener) is also an effective
method to hold transient below thyristor ratings. The use
of an RC "snubber" circuit is effective in reducing the'
effects ofthe high-energy short-duration transients more
frequently encountered. The snubber is commonly
required to prevent the static dv/dt limits from being
exceeded, and often may be satisfactory in limiting the
amplitude of the voltage transients as well.
For all applications, the dv/dt limits may not be
exceeded. This is the minimum value of the rate of rise
off-state voltage applied immediately to the MT1-MT2
terminals after the principal current of the opposing
polarity has decreased to zero.
SPURIOUS GATE SIGNALS: In noisy electrical environments, it is possible for enough energy to cause gate
triggering to be coupled into the gate wiring by stray
capacitance or electromagnetic induction. It is therefore
advisable to keep the gate lead short and have the common return directly to the cathode or MT1. In extreme
cases, shielded wire may be required. Another aid commonly used is to connect a capacitance on the order of
0.01 to 0.1/LF across the gate and cathode terminals. This
has the added advantage of increasing the thyristor dv/dt
capability, since it forms a capacitive divider with the
anode to gate capacitance. The gate capacitor also reduces the rate of application of gate trigger current which
may cause di/dt failures if a high inrush load is present.
THYRISTOR RATINGS
To insure long life and proper operation, it is important
that operating conditions be restrained from exceeding

thyristor ratings. The most important and fundamental
ratings are temperature and voltage which are interrelated to some extent. The voltage ratings are applicable
only up to the maximum temperature ratings of a particular part number. The temperature rating may be chosen by the manufacturer to insure satisfactory voltage
ratings, switching speeds, or dv/dt ability.
OPERATING CURRENT RATINGS
Current ratings are not independently established as a
rule. The values are chosen such that at a practical case
temperature the power dissipation will not cause the
junction temperature rating to be exceeded.
Various manufacturers may choose different criteria to
establish ratings. At Motorola, use is made of the thermal
response of the semiconductor and worst case values of
on-state voltage and thermal resistance, to guarantee the
junction temperature is at or below its rated value. Values
shown on data sheets consequently differ somewhat
from those computed from the standard formula:
TC (max) = T (rated) - RruC x PO(AV)
where
TC (max) = Maximum allowable case temperature
T (rated) = Rated junction temperature or maximum
rated case temperature with zero principal
current and rated ac blocking voltage
applied.
RruC
= Junction to case thermal resistance
PO(AV)
= Average power dissipation
The above formula is generally suitable for estimating
case temperature in situations not covered by data sheet
information. Worst case values should be used for thermal resistance and power dissipation.
OVERLOAD CURRENT RATINGS
Overload current ratings may be divided into two
types: non-repetitive and repetitive.
Non-repetitive overloads are those which are not a part
of the normal application of the device. Examples of such
overloads are faults in the equipment in which the devices are used and accidental shorting of the load. Nonrepetitive overload ratings permit the device to exceed
its maximum operating junction temperature for short
periods of time because this overload rating applies following any rated load condition. In the case of a reverse
blocking thyristor or SCR, the device must block rated
voltage in the reverse direction during the current overload. However, no type of thyristor is required to block
off-stage voltage at any time during or immediately following the overload. Thus, in the case of a triac, the
device need not block in either direction during or
immediately following the overload. Usually only approximately one hundred such current overloads are permitted over the life of the device. These non-repetitive
overload ratings just described may be divided into two
types: multicycle (which include single cycle) and subcycle. For an SCR, the multicycle overload current rating,
or surge current rating as it is commonly called, is generally presented as a curve giving the maximum peak

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MOTOROLA THYRISTOR DEVICE DATA
1-2-6

values of half sine wave on-state current as a function of
overload duration measured in number of cycles for a 60
Hz frequency.
For a triac, the current waveform used in the rating is
a full sine wave. Multicycle surge curves are used to select proper circuit breakers and series line impedances
to prevent damage to the thyristor in the event of an
equipment fault.
The subcycle overload or subcycle surge rating curve
is so called because the time duration of the rating is
usually from about one to eight milliseconds which is
less than the time of one cycle of a 60 Hz power source.
Overload peak current is often given in curve form as a
function of overload duration. This rating also applies
following any rated load condition and neither off-state
nor reverse blocking capability is required on the part of
the thyristor immediately following the overload current.
The subcycle surge current rating may be used to select
the proper current-limiting fuse for protection of the thyristor in the event of an equipment fault. Since this use
ofthe rating is so common, manufacturers simply publish
the i 2t rating in place of the subcycle current overload
curve because fuses are commonly rated in terms of i2t.
The i 2t rating can be approximated from the single cycle
surge rating (lTSM) by using:
i2t = 12TSM x tl2
where the time t is the time base of the overload, i.e.,
8.33 ms for a 60 Hz frequency.
Repetitive overloads are those which are an intended
part of the application such as a motor drive application.
Since this type of overload may occur a large number of
times during the life of the thyristor, its rated maximum
operating junction temperature must not be exceeded
during the overload if long thyristor life is required. Since
this type of overload may have a complex current waveform and duty-cycle, a current rating analysis involving
the use of the transient thermal impedance characteristics is often the only practical approach. In this type of
analysis, the thyristor junction-to-case transient thermal
impedance characteristic is added to the user's heat dissipator transient thermal impedance characteristic. Then
by the superposition of power waveforms in conjunction
with the composite thermal impedance curve, the overload current rating can be obtained. The exact calculation
procedure is found in the power semiconductor
literature.

THEORY OF SCR POWER CONTROL
The most common form of SCR power control is phase
control. In this mode of operation, the SCR is held in an
off condition for a portion of the positive half cycle and
then is triggered into an on condition at a time in the half
cycle determined by the control circuitry (in which the
circuit current is limited only by the load - the entire line
voltage except for a nominal one volt drop across the
SCR is applied to the load).

One SCR alone can control only one half cycle of the
waveform. For full wave ac control, two SCRs are connected in inverse parallel (the anode of each connected
to the cathode of the other, see Figure 2.9a). For full
wave dc control, two methods are possible. Two SCRs
may be used in a bridge rectifier (see Figure 2.9b) or
one SCR may be placed in series with a diode bridge
(see Figure 2.9c).
Figure 2.10 shows the voltage waveform along with
some common terms used in describing SCR operation.
Delay angle is the time, measured in electrical degrees,
during which the SCR is blocking the line voltage. The
period during which the SCR is on is called the conduction angle.
It is important to note that the SCR is a voltage controlling device. The load and power source determine the
circuit current.
Now we arrive at a problem. Different loads respond
to different characteristics of the ac waveform. Some
loads are sensitive to peak voltage, some to average voltage and some to rms '(foltage. Figure 2.11 shows the
various characteristic voltages plotted against the conduction angle for half wave and full wave circuits. These
voltages have been normalized to the rms of the applied
voltage. To determine the actual peak, average or rms
voltage for any conduction angle, we simply multiply the
normalized voltage by the rms value of the applied line
voltage. (These normalized curves also apply to current
in a resistive circuit.) Since the greatest majority of circuits are either 115 or 230 volt power, the curves have
been redrawn for these voltages in Figure 2.12.

•

A relative power curve has been added to Figure 2.12
for constant impedance loads such as heaters. (Incandescent lamps and motors do not follOW this curve precisely since their relative impedance changes with applied voltage.) To use the curves, we find the full wave
rated power of the load, then multiply by the fraction
associated with the phase angle in question. For example,
a 180° conduction angle in a half wave circuit provides
0.5 x full wave full-conduction power.
An interesting point is illustrated by the power curves.
A conduction angle of 30° provides only three per cent
offull power in a full wave circuit, and a conduction angle
of 150° provides 97 per cent of full power. Thus, the control circuit can provide 94 per cent of full power control
with a pulse phase variation of only 120°. Thus, it becomes pointless in many cases to try to obtain conduction angles less than 30° or greater than 150°.

CONTROL CHARACTERISTICS
The simplest and most common control circuit for
phase control is a relaxation oscillator. This circuit is
shown diagrammatically as it would be used with an SCR
in Figure 2.13. The capacitor is charged through the resistor from a voltage or current source until the breakover
voltage of the trigger device is reached. At that time, the
trigger device changes to its on state, and the capacitor
is discharged through the gate of the SCR. Turn-on of the

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MOTOROLA THYRISTOR DEVICE DATA
1-2-7

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SCR is thus accomplished with a short, high current
pulse. Commonly used trigger devices are unijunction
and programmable unijunction transistors, silicon bilateral switches, sidacs and optically coupled thyristors.
Phase control can be obtained by varying the RC time
constant of a charging circuit so that trigger device turnon occurs at varying phase angles within the controlled
half cycle.
If the relaxation oscillator is to be operated from a pure
dc source, the capacitor voltage-time characteristic is
shown in Figure 2.14. This shows the capacitor voltage
as it rises all the way to the supply voltage through several time constants. Figure 2.14(b) shows the charge characteristic in the first time constant greatly expanded. It is
this portion of the capacitor charge characteristic which
is most often used in SCR and Triac control circuits.
Generally, a design starting point is selection of a
capacitance value which will reliably trigger the thyristor
when the capacitor is discharged. Gate characteristics
and ratings, trigger device properties and the load
impedance playa part in the selection. Since not all of
the important parameters for this selection are completely specified, experimental determination is often the
best method.
Low-current loads and strongly inductive circuits
sometimes cause triggering difficulty because the gate
current pulse goes away before the principal thyristor
current achieves the latching value. A series gate resistor
can be used to introduce a RC discharge time constant
in the gate circuit and lengthen trigger pulse duration
allowing more time for the main terminal current to rise
to the latching value. Small thyristors will require a series
gate resistance to avoid exceeding the gate ratings. The
discharge time constant of a snubber, if used, can also
aid latching. The duration of these capacitor discharge
duration currents can be estimated by

("

CONl1IOL
CIRCUIT
INE

LOAD

o--------------------------~O
(a)
ac Control

CONl1I0L
CIRCUIT

LINE

LOAD
(b)

Two SCR de Control

LINE

t w 10 = 2.3 RC where t w 10 = time for current to decay
to 10% of the peak.
For example, when an 8 volt SBS is used to discharge
a 0.5 ,."F capacitor through a 15 ohm resistor into the gate
of an SCR

(c)

One SCR de Control

t w 10 = (2.3) (15) (0.5) = 17.3,."s.

Figure 2.9. SCR Connections For Various Methods
Of Phase Control

Because of internal voltage drops in the SBS and SCR
gates, the peak current will be somewhat less than
Ipk = 8/15 = 0.53 amp.
All trigger devices require some drive current to fire.
Highly sensitive devices appear to be voltage operated
when the current required to fire them is insignificant.
The MBS4991 SBS requires that the switching current be
taken into consideration. For a given RC time constant,
larger capacitors allow the use of lower value timing
resistors and less sensitive trigger components.
An example will demonstrate the procedure. Assume
that we wish to trigger a 2N4170 SCR with an 8 volt
MBS4991. We have determined that a 1 ,."F capacitor will
supply the necessary SCR gate current magnitude and
duration while not exceeding the gate ratings. Assume a
16 volt 60 Hz dc gate power supply, 30· minimum con-

I

,

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I

I"

1\

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Figure 2.10. Sine Wave Showing Principles
Of Phase Control

MOTOROLA THYRISTOR DEVICE DATA
1-2-8

7

FULL WAVE RECTIFIED OPERAJION
VOLTAGE APPLIED TO LOAD

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Figure 2.11. Half-Wave Characteristics Of Thyristor Power Control
APPLIED
VOLTAGE
230V 115V
180
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60

I

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40

(b)

CONDUCTION ANGLE

60

/

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80
100 120
CONDUCTION ANGLE

Figure 2.12. Full-Wave Characteristics Of Thyristor Power Control

MOTOROLA THYRISTOR DEVICE DATA
1-2-9

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rmi~

1/

~

w

FULL WAVE

140

160

180

16V 4 rnA 60 Hz
0.9
2N4170
SCR

0.8

w
e>

~1:i

•

~~

Figure 2.13. SCR Trigger Circuit

10 x 10- 3
1xlO- 6

~l:>

uz

::2

5i

0.1

I

I

I
I

o
o

4

TIME CONSTANTS

= 10kohms.

Figure 2.14(a). Capacitor Charging From dc Source
0.7

16 V-8 V
104 ohms = 800 }LA.
w

~

0.5

~!:;

/

wO

e»

!3~

0.4

>:::>

a: en 0.3

OLL
0-0

5~ 0.2
IE

0.1

= 2000 ohms.

A 10 k potentiometer with a 2 k series resistor will serve
this purpose.
In this application, the trigger circuit is reset by line
crossing each half cycle. Consequently, SBS latching after
firing is permissible. If the device were used as a free
running oscillator, it would be necessary for the peak
point current to be less than the minimum holding current
specification of the SBS at maximum operating temperature. Timing accuracy requires the 16 V source to be
capable of supplying the worst case required current. In
the example, the initial instantaneous capacitor charging
current will be 16 V/2 k = 8 mA. The gate load line must
also enclose the peak point voltage. The SBS clamps the
capacitor voltage when it breaks over causing little or no
further change in the voltage across the capacitor. Con-

V

/

~~

1.39 ms = 0.693 RC
RC = 2.01 ms

V

/"

,IV

0"-

30/180x8.33 = 1.39 ms

2.01 x 10- 3
1 x 10- 6

V

./

0.6

This is more than the 500 }LA needed by the MBS4991
at 25°C. If it were not, the design procedure would need
to be repeated using larger C and smaller R. Alternatively,
a more sensitive MBS4992 could be used.
To obtain minimum R, 150° conduction angle, the delay
is 30° or

=

0.3

/

V

~

/

0.4

0.2

The timing resistor must be capable of supplying at
least the worst case maximum SBS switching current at
the peak point voltage. The available current is

R

0.6

58::
>:::> 0.5
en

6.94 ms = 0.693 RC
RC = 10.01 ms.
If C = 1 }LF,

=

I

~~

duction angle and 150° maximum conduction angle with
a 60 Hz anode power source. The capacitor must charge
to 8/16 or 0.5 of the available charging voltage in the
desired time. Referring to Figure 2.14(b), we see that 0.5
of the charging voltage represents 0.693 time constant.
The 30° conduction angle requires that the firing pulse
be delayed 1500 or 6.94 milliseconds (8.33 milliseconds
is the period of 1/2 cycle at 60 Hz). To obtain this delay,

R

0.7

/

L

/

V

o
o

0.2

0.4

0.6
0.8
TIME CONSTANTS

1.2

Figure 2.14(b). Expanded Scale
sequently, all of the available current at that time (16 V-8
V)/2 k = 4 mAl diverts through the SBS causing it to fire.
In many of the recently proposed circuits for low cost
operation, the timing capacitor ofthe relaxation oscillator
is charged through a rectifier and resistor using the ac
power line as a source. Calculations of charging time with
this circuit become exceedingly difficult, although they
are still necessary for circuit design. The curves of Figure
2.15 simplify the design immensely. These curves show
the voltage-time characteristic of the capacitor charged
from one half cycle of a sine wave. Voltage is normalized

~~~~~~~~~
MOTOROLA THYRISTOR DEVICE DATA
1-2-10

1.80,------y------y------,---..,..---...,------.-----,-----,,------,

1.40

....

o

~~

~~

1.20 ~---+---_+--___7'4__--./_+_--__+:7"".::::::::==~~--_+_---~--~
CAPACITOR
VOLTAGE, Vc

a:: 0
.... >
«w

~~
~ @

0.80

f-----+---+-_+-----,~-+_r_--*-____::;"e--_+__:".....""--f_---+____'t--_+---_I

~'"
g
1ii 0.707
~ ~ 0.60 1----++---7I''----r-bc.......--;1'L---j;;..L----:::::Io-=::....---t-----::=;;p--+~_+---___l

~E~
:;;
~
0.40 I---~+-+---,i-'--_r_----::;"Ly"---::?.e::::...+-~~'--+--

0'20~~~E=IIo
180

20
160

40
140

60
120

80
100

100
80

120 ~4O
60
40

30

160
20

180
0

DELAY ANGLE IN DEG.
CONDUCTION ANGLE IN DEG.

Figure 2.15(a). Capacitor Voltage When Charged

0.35

0.30

....

0

~~

~~

0.25

a:: 0
.... >
«w
",e..>
«a::

0.20

~'"
'-'
:z
~a
ca::

0.15

~~

~~ 0.10

a!c;

:;;
E
a::
c
:z

0.05
0
0
180

20
160

40
140

80
100

100
80

120

140

160

60~ DELAY ANGLE20 IN DEG.

180

0

CONDUCTION ANGLE IN DEG.

Figure 2.15(b). Expansion of Figure 2.15(8)

MOTOROLA THYRISTOR DEVICE DATA
1-2-11

-

o

180 DELAY ANGLE IN DEG.
180

170

160

150

140

130

120

110

100
90
80
70
60
rms CHARGING SOURCE VOLTAGE

50

40

30

20

10

0 CONDUCTION
ANGLE IN DEG.

Figure 2.15(cl. Expansion of Figure 2.15(bl

to the rms value of the sine wave for convenience of use.
The parameter of the curves is a new term, the ratio of
the RC time constant to the period of one half cycle, and
is denoted by the Greek letter T. It may most easily be
calculated from the equation
T = 2RCf. Where: R = resistance in Ohms
C = capacitance in Farads
f = frequency in Hertz.
To use the curves when starting the capacitor charge
from zero each half cycle, a line is drawn horizontally
across the curves at the relative voltage level of the trigger breakdown compared to the rms sine wave voltage.
The T is determined for maximum and minimum conduction angles and the limits of R may be found from
the equation for T.
An example will again clarify the picture. Consider the
same problem as the previous example, except that the
capacitor charging source is the 115 Vac, 60 Hz power
line.
The ratio of the trigger diode breakover voltage to the
RMS charging voltage is then
81115 = 69.6 x 10- 3.
A line drawn at 0.0696 on the ordinate of Figure 2.15(cl
shows that for a conduction angle of 30°, T = 12, and for
a conduction angle of 150°, T = O.S. Therefore, since R
= T/(2CFI
Rmax

12
2(1.0xl0 6160 100 k ohms,

Rmin

2(lxl0 6)60 = 6667 ohms.

O.S

These values would require a potentiometer of 100 k
in series with a 6.2 k minimum fixed resistance.
The timing resistor must be capable of supplying the
highest switching current allowed by the SBS specification at the switching voltage.
When the conduction angle is less than 90°, triggering
takes place along the back of the power line sine wave
and maximum firing current thru the SBS is at the start
of SBS breakover. If this current does not equal or exceed
"Is" the SBS will fail to trigger and phase control will be
lost. This can be prevented by selecting a lower value
resistor and larger capacitor. The available current can
be determined from Figure 2.15(a). The vertical line
drawn from the conduction angle of 30° intersects the
applied voltage curve at 0.707. The instantaneous current
at breakover is then
1=(0.707xl15- S)/l00 k = 733 pA
When the conduction angle is greater than 90°, triggering takes place before the peak of the sine wave. If
the current thru the SBS does not exceed the switching
current at the moment of breakover, triggering may still
take place but not at the predicted time because of the
additional delay for the rising line voltage to drive the
SBS current up to the switching level. Usually long conduction angles are associated with low value timing resistors making this problem less likely. The SBS current at
the moment of breakover can be determined by the same
method described for the trailing edge.
It is advisable to use a shunt gate-cathode resistor
across sensitive gate SCR's to provide a path for leakage
currents and to insure that firing of the SCR causes turnon of the trigger device and discharge of the gate circuit
capacitor.

MOTOROLA THYRISTOR DEVICE DATA
1-2-12

Figure 2.16(a) shows a simple dc full wave control circuit. RGK is optional on non-sensitive gate parts. Figure
2.16(b) shows an ac control derived from that of Figure
2.16(a). Figure 2.16(c) is a double time constant circuit
featuring low hysteresis.

2N4170

TRIAC THEORY

15

The triac is a three-terminal ac semiconductor switch
which is triggered into conduction when a low-energy
signal is applied to its gate. Unlike the silicon controlled
rectifier or SCR, the triac will conduct current in either
direction when turned on. The triac also differs from the
SCR in that either a positive or negative gate signal will
trigger the triac into conduction. The triac may be thought
of as two complementary SCRs in parallel.
The triac offers the circuit designer an economical and
versatile means of accurately controlling ac power. It has
several advantages over conventional mechanical
switches. Since the triac has a positive "on" and a zerocurrent "off" characteristic, it does not suffer from the
contact bounce or arcing inherent in mechanical
switches. The switching action of the triac is very fast
compared to conventional relays, giving more accurate
control. A triac can be trigged by dc, ac, rectified ac or
pulses. Because of the low energy required for triggering
a triac, the control circuit can use any of a number of
low-cost solid-state devices presently on the market such
as transistors, unijunction transistors, bilateral switches,
four-layer diodes and sensitive-gate SCRs and optically
coupled drivers.

CHARACTERISTICS OF THE TRIAC
Figure 2.17(a) shows the triac symbol and its relationship to a typical package. Since the triac is a bilateral
device, the terms "anode" and "cathode" used for unilateral devices have no meaning. Therefore, the terminals
are simply designated by MT1, MT2, and G, where MT1
and MT2 are the current-carrying terminals, and G is the
gate terminal used for triggering the triac. To avoid confusion, it has become standard practice to specify all currents and voltages using MT1 as the reference point.
The basic structure of a triac is shown in Figure 2.17(b).
This drawing shows why the symbol adopted for the triac
consists of two complementary SCRs with a common
gate. The triac is a five-layer device with the region
between MT1 and MT2 being a P-N-P-N switch (SCR) in
parallel with a N-P-N-P switch (complementary SCR).
Also, the structure gives some insight into the triac's ability to be triggered with either a positive or negative gate
signal. The region between MT1 and G consists of two
complementary diodes. A positive or negative gate signal
will forward-bias one of these diodes causing the same
transistor action found in the SCR. This action breaks
down the blocking junction regardless of the polarity of

6.2 k

I/tF

LOAD

Figure 2.16(a). Simple de Power Control Circuit

LINE

LOAD

15

6.2 k

o----------------------------~o

Figure 2.16(b). Simple Full-Wave Power Control

LINE

LOAD

15

27k

........................................................

o~

~o

Figure 2.16(e). Full Range ae Power Control

MOTOROLA THYRISTOR DEVICE DATA
1-2-13

•

•

MTl. Current flow between MT2 and MT1 then causes
the device to provide gate current internally. It will remain
on until this current flow is interrupted.
The voltage-current characteristic of the triac is shown
in Figure 2.18 where, as previously stated, MTl is used
as the' reference point. The first quadrant, Q-I, is the
region where MT2 is positive with respect to MT1 and
quadrant III is the opposite case. Several of the terms
used in characterizing the triac are shown on the figure.
VORM is the breakover voltage of the device and is the
highest voltage the triac may be allowed to block in either
direction. If this voltage is exceeded, even transiently, the
triac may go into conduction without a gate signal.
Although the triac is not damaged by this action if the
current is limited, this situation should be avoided
because control of the triac is lost. A triac for a particular
application should have VORM at least as high as the
peak of the ac waveform to be applied so reliable control
can be maintained. The holding current (IH) is the minimum value of current necessary to maintain conduction.
When the current goes below IH' the triac ceases to conduct and reverts to the blocking state. IORM is the leakage
current of the triac with VORM applied from MT2 to MT1
and is several orders of magnitude smaller than the current rating of the device. The figure shows the characteristic of the triac without a gate signal applied but it
should be noted that the triac can be triggered into the
on state at any value of voltage up to VORM by the application of a gate signal. This important characteristic
makes the triac very useful.
Since the triac will conduct in either direction and can
be triggered with either a positive or negative gate signal
there are four possible triggering modes (Figure 2.3):
Quadrant I; MT2( +), G( +), positive voltage and positive gate current. Quadrant II; MT2( +), G( -), positive
voltage and negative gate current. Quadrant III;
MT2( -), G( -), negative voltage and negative gate current. Quadrant IV; MT2( -), G( +), negative voltage and
positive gate current.
Present triacs are most sensitive in quadrants I and III,
slightly less so in quadrant II, and much less sensitive in
quadrant IV. Therefore it is not recommended to use
quadrant IV unless special circumstances dictate it.
An important fact to remember is that since a triac can
conduct current in both directions, it has only a brief
. interval during which the sine wave current is passing
through zero to recover and revert to its blocking state.
For this reason, reliable operation of present triacs is
limited to 60 Hz line frequency and lower frequencies.
For inductive loads, the phase-shift between the current and voltage means that at the time the current falls
below IH and the triac ceases to conduct, there exists a
certain voltage which must appear across the triac. If this
voltage appears too rapidly, the triac will resume con-

MT2---t."Q

MTl

..

(al
MT2

r
I

p

N

N

I

N

p

I

I

!

I

!

(bl

MTl

IN
G

Figure 2.17. Triac Structure and Symbol

IORM

,
,-- v--l

VORM

t~

t 1--""7-7
H

BLOCKING STATE

0111

ON·STATE

IH _ _
V~M
_
J..

01
MT2 +
BLOCKING
STATE

~

I

I

,

MT2-0N·STATE /

Figure 2.18. Triac Voltage-Current Characteristic

duction and control is lost. In order to achieve control
with certain inductive loads, the rate of rise in voltage
(dv/dt) must be limited by a series RC network across the
triac. The capacitor will then limit the dv/dt across the
triac. The resistor is necessary to limit the surge of current
from the capacitor when the triac fires, and to damp the
ringing of the capacitance with the load inductance.

MOTOROLA THYRISTOR DEVICE DATA
1-2-14

METHODS OF CONTROL
AC SWITCH

A useful application of the triac is as a direct replacement for an ac mechanical relay. In this application, the
triac furnishes on-off control and the power-regulating
ability of the triac is not utilized. The control circuitry for
this application is usually very simple, consisting of a
source for the gate signal and some type of small current
switch, either mechanical or electrical. The gate signal
can be obtained from a separate source or directly from
the line voltage at terminal MT2 of the triac.
PHASE CONTROL

An effective and widely-used method of controlling the
average power to a load through the triac is by phase
control. Phase control is a method of utilizing the triac to
apply the ac supply to the load for a controlled fraction
of each cycle. In this mode of operation, the triac is held
in an off or open condition for a portion of each positive
and negative cycle, and then is triggered into an on condition at a time in the half cycle determined by the control
circuitry. In the on condition, the circuit current is limited
only by the load - i.e., the entire line voltage (less the
forward drop of the triac) is applied to the load.
Figure 2.19 shows the voltage waveform along with
some common terms used in describing triac operation.
Delay angle is the angle, measured in electrical degrees,
during which the triac is blocking the line voltage. The
period during which the triac is on is called the conduction angle.
It is importantto note that the triac is either off (blocking
voltage) or fully on (conducting). When it is in the on
condition, the circuit current is determined only by the
load and the power source.
As one might expect, in spite of its usefulness, phase
control is not without disadvantages. The main disadvantage of using phase control in triac applications is the
generation of electro-magnetic interference (EM!). Each
time the triac is fired the load current rises from zero to
the load-limited current value in a very short time. The
resulting difdt generates a wide spectrum of noise which
may interfere with the operation of nearby electronic
equipment unless proper filtering is used.

as little as 10 volts across it into a load of a few-hundred
watts, sufficient EMI will result to nUllify the advantages
of adopting zero-point switching in the first place.

BASIC TRIAC AC SWITCHES
Figure 2.21 shows methods of using the triac as an onoff switch. These circuits are useful in appliCations where
simplicity and reliability are important. As previously
stated, there is no arcing with the triac, which can be very
important in some applications. The circuits are for resistive loads as shown and require the addition of a dvfdt
network across the triac for inductive loads. Figure 2.21 (a)
shows low-VOltage control of the triac. When switch 51
is closed, gate current is supplied to the triac from the
10 volt battery. In order to reduce surge current failures
during turn on (ton), this current should be 5 to 10 times
the maximum gate current (lGT) required to trigger the
triac.
The triac turns on and remains on until 51 is opened.
This circuit switches at zero current except for initial turn
on. 51 can be a very-low-current switch because it carries
only the triac gate current.
Figure 2.21 (b) shows a triac switch with the same characteristics as the circuit in Figure 2.21 (a) except the need
for a battery has been eliminated. The gate signal is
obtained from the voltage at MT2 of the triac prior to turn
on.
The circuit shown in Figure 2.21 (c) is a modification of
Figure 2.2Hb). When switch 51 is in position one, the
triac receives no gate current and is non-conducting. With
51 in position two, circuit operation is the same as that
for Figure 2.21 (b). In position three, the triac receives gate
current only on positive half cycles. Therefore, the triac
conducts only on positive half cycles and the power to
the load is half wave.
Figure 2.21 (d) shows ac control of the triac. The pulse
can be transformer coupled to isolate power and control
circuits. Peak current should be 10 times IGT(max) and
the RC time constant should be 5 times ton(max). A high
frequency pulse (1 to 5 kHz) is often used to obtain zero
point switching.

•

ZERO POINT SWITCHING

In addition to filtering, EMI can be minimized by zeropoint switching, which is often preferable. Zero-point
switching is a technique whereby the control element (in
this case the triac) is gated on at the instant the sine wave
voltage goes through zero. This reduces, or eliminates,
turn-on transients and the EMI. Power to the load is controlled by providing bursts of complete sine waves to the
load as shown in Figure 2.20. Modulation can be on a
random basis with an on-off control, or a proportioning
basis with the proper type of proportional control.
In order for zero-point switching to be effective, it must
indeed be zero point switching. If a triac is turned on with

~
DELAY ANGLE

j

J

CONDUCTION ANGLE

Figure 2.19. Sine Wave Showing Principles
of Phase Control

"w!ci!fd>.,~·/',fdR."~'5;>"%.*~JUw.:N~~~·.':V~'A~S::~5iU':r.<,>4:;:*t5·
.:Hii·'''.!'·'~~D
•
~~ '1~~~~>%!''$~~~I'f:'"'' ~~1o/t

TJllhili»lf ~.t".~ .."P.~t .-'-"'1IIi1llr'X ';;~.\l~'w~~:1h)llr.*~n,

'.;r.

,~,.;..iJ'~:'ll~'·f.:.);l&"~il1!1i':1""·T,l\.~I~'B~~~3$~~,..!t.,:E

MOTOROLA THYRISTOR DEVICE DATA
1-2-16

n
--- ---- ----l --- ---- ---- ---- ---,

LOAD VOLTAGE

11111Jw~~,~!~~t~~t:j:j
nnnn
n nr

AC LINE

LINE VOLTAGE

II \I

\1\1

Figure 2.23. Slave and Master SCRs for
Zero-Point Switching

~I

•

Figure 2.22. Load Voltage and line Voltage for
25% Duty Cycle
2 p.F
200 V

low-power transistor, which can be controlled by bridgesensing circuits, manually controlled potentiometers, or
various other techniques.
A basic SCR is very effective and trouble free. However,
it can dissipate considerable power. This must be taken
into account in designing the circuit and its packaging.
In the case of triacs, a slaving circuit is also usually
required to furnish the gate signal for the negative half
cycle. However, triacs can use slave circuits requiring less
power than do SCRs as shown in Figure 2.23. Other considerations being equal, the easier slaving will sometimes make the triac circuit more desirable than the SCR
circuit.
Besides slaving circuit power dissipation, there is another consideration which should be carefully checked
when using high-power zero-point switching. Since this
is on-off switching, it abruptly applies the full load to the
power line every time the circuit turns on. This may cause
a temporary drop in voltage which can lead to erratic
operation of other electrical equipment on the line (light
dimming, TV picture shrinkage, etc.). For this reason,
loads with high cycling rates should not be powered from
the same supply lines as lights and other voltagesensitive devices. On the other hand, if the load cycling
rate is slow, say once per half minute, the loading flicker
may not be objectionable on lighting circuits.
A note of caution. is in order here. The full-wave zeropoint switching control illustrated in Figure 2.23 should
not be used as a half-wave control by removing the slave
SCR. When the slave SCR in Figure 2.23 is removed, the
master SCR has positive gate current flowing over approximately 1/4 of a cycle while the SCR itself is in the
reverse-blocking state. This occurs during the negative
half cycle of the line voltage. When this condition exists,
Q1 will have a high leakage current with full voltage applied and will therefore be dissipating high power. This
will cause excessive heating of the SCR and may lead to
its failure. If it is desirable to use such a circuit as a halfwave control, then some means of clamping the gate
signal during the negative half cycle must be devised to
inhibit gate current while the SCR is reverse blocking.
The circuits shown in Figures 2.25 and 2.26 do not have
this disadvantage and may be used as half-wave controls.

MAC210-4
ACLINE

ON-DFF
CONTROL

Figure 2.24. Triac Zero-Point Switch

51
LOAD

D1
1N4004
AC
LINE

R1
3.B k
R2
B.2 k
1W

Ql

2N4216
D2
lN4004

Figure 2.25. Sensitive-Gate Switch

C1
0,25 p.F
200 V

AC
LINE

C2
10 nF
200 V

Rl
3,Bk
R2 H>!-+-iI'I----<

LOAD

R3
100

Q1
2N4442

B.H
lW

Figure 2.26. Zero-Point Switch

~~~~
MOTOROLA THYRISTOR DEVICE DATA
1-2-17

OPERATION

•

therefore determines the average amount of power supplied to the load. Zero-point switching is necessary for
large loads such as electric heaters because conventional
phase-shift techniques would generate an excessive
amount of electro-magnetic interference (EM!).
This particular slaving circuit has two important advantages over standard RC discharge slaving circuits. It
derives these advantages with practically no increase in
price by using a low-costtransistor in place ofthe currentlimiting resistor normally used for slaving. The first advantage is that a large pulse of gate current is available
at the zero-crossing point. This means that it is not necessary to select sensitive-gate SCRs for controlling
power. The second advantage is that this current pulse
is reduced to zero within one alternation. This has a couple of good effects on the operation of the slaving SCR.
It prevents gate drive from appearing while the SCR is
reverse-biased, which would produce high power dissipation within the device. It also prevents the slaved SCR
from being turned on for additional half cycles after the
drive is removed from the control SCR.

The zero-point switches shown in Figures 2.25 and 2.26
are used to insure that the control SCR turns on at the
start of each positive alternation. In Figure 2.25 a pulse
is generated before the zero crossing and provides a
small amount of gate current when line voltage starts to
go positive. This circuit is primarily for sensitive-gate
SCRs. less-sensitive SCRs, with their higher gate currents, normally require smaller values for R1 and R2 and
the result can be high power dissipation in these resistors. The circuit of Figure 2.26 uses a capacitor, C2, to
provide a low-impedance path around resistors R1 and
R2 and can be used with less-sensitive, higher-current
SCRs without increasing the dissipation. This circuit actually oscillates near the zero crossing point and provides
a series of pulses to assure zero-point switching.
The basic circuit is that shown in Figure 2.25. Operation
begins when switch S1 is closed. If the positive alternation is present, nothing will happen since diode 01 is
reverse biased. When the negative alternation begins,
capacitor C1 will charge through resistor R2 toward the
limit of voltage set by the voltage divider consisting of
resistors R1 and R2. As the negative alternation reaches
its peak, C1 will have charged to about 40 volts. line
voltage will decrease but C1 cannot discharge because
diode 02 will be reverse biased. It can be seen that C1
and three-layer diode 04 are effectively in series with the
line. When the line drops to 10 volts, C1 will still be 40
volts positive with respect to the gate of 01. At this time
04 will see about 30 volts and will trigger. This allows C1
to discharge through 03, 04, the gate of 01, R2, and R1.
This discharge current will continue to flow as the line
voltage crosses zero and will insure that 01 turns on at
the start of the positive alternation. Oiode 03 prevents
reverse gate-current flow and resistor R3 prevents false
triggering.
The circuit in Figure 2.26 operates in a similar manner
up to the point where C1 starts to discharge into the gate.
The discharge path will now be from C1 through 03, 04,
R3, the gate of 01, and capacitor C2. C2 will quickly
charge from this high pulse of current. This reduces the
voltage across 04 causing it to turn off and again revert
to its blocking state. Now C2 will discharge through R1
and R2 until the voltage on 04 again becomes sufficient
to cause it to break back. This repetitive exchange of
charge from C1 to C2 causes a series of gate-current
pulses to flow as the line voltage crosses zero. This
means that 01 will again be turned on at the start of each
positive alternation as desired. Resistor R3 has been
added to limit the peak gate current.

OPERATION
The SCR slaving circuit shown in Figure 2.27 provides
a single power pulse to the gate of SCR 02 each time
SCR 01 turns on, thus turning 02 on for the half cycle
following the one during which 01 was on. 02 is therefore turned on only whim 01 is turned on, and the load
can be controlled by a signal connected to the gate of
01 as shown in the schematic. The control signal can be
either dc or a power pulse. If the control signal is synchronized with the power line, this circuit will make an
excellent zero-point switch. During the time that 01 is
on, capacitor C1 is charged through R1, 01 and 01. While
C1 is being charged, 01 reverse-biases the base-emitter
junction of 03, thereby holding it off. The charging time
constant, R1, C1, is set long enough that C1 charges for
practically the entire half cycle. The charging rate of C1
follows an "S" shaped curve, charging slowly at first,
then faster as the supply voltage peaks, and finally slowly
again as the supply voltage decreases. When the supply
voltage falls below the voltage across C1, diode 01 becomes reverse biased and the base-emitter of 03 becomes forward biased. For the values shown, this occurs
approximately 6° before the end of the half cycle con-

R1

AN SCR SLAVING CIRCUIT

120 VAC
60Hz

An SCR slaving circuit will provide full-wave control of
an ac load when the control signal is available to only
one of a pair of SCRs. An SCR slaving circuit is commonly
used where the master SCR is controlled by zero-point
switching. Zero-point switching causes the load to receive a full cycle of line voltage whenever the control
signal is applied. The duty cycle of the control signal
,~.1~~l!!'!I;"~VLk/W('~;,t';.ij'X ,\/:~~;t~~1!;' '\4;¥~,~i..-·t.;,'1"',·,;':Y:$f'
m:t<.~~~~~ .;;:;;~,,;{*0.y·,~· ....,h .~./ ........ :.. (...$ .. "<+

'>..;-...r.

*1000 WATT LOAD. SEE TEXT.

Figure 2.27. SCR Slave Circuit

,: " '~'n,j,v
-it"':'" ',:, ;>'T'",,',,'\&k.., ~~:V~',:..&,~';'''''''''' ''!1.n,i.l¥.':'IClMt¢/jiL",'
':".t:i' :""f:">}fu~ Vli: ~ ;, .J§ .~~ ~t:~...~~"\..-~~,~t..:}.>'tJr;~:~·~_.;; . . ·

,"'R-:~~"1~~'/ ~ .. ;~bv'L7;>;.t

MOTOROLA THYRISTOR DEVICE DATA
1-2-18

duction of 01. The base current is derived from the energy stored in C1. This turns on 03, discharging C1
through 03 and into the gate of 02. As the voltage across
C1 decreases, the base drive of 03 decreases and somewhat limits the collector current. The current pulse must
last until the line voltage reaches a magnitude such that
latching current will exist in 02. The values shown will
deliver a current pulse which peaks at 100 mA and has
a magnitude greater than 50 mAwhen the anode-cathode
voltage of 02 reaches plus 10 volts. This circuit com-

pletely discharges C1 during the half cycle that 02 is on.
This eliminates the possibility of 02 being slaved for additional half cycles after the drive is removed from 01.
The peak current and the current duration are controlled
by the values of R1 and C1. The values chosen provide
sufficient drive for "shorted emitter" SCRs which typically require 10 to 20 mA to fire. The particular SCR used
must be capable of handling the maximum current requirements of the load to be driven; the 8 ampere, 200
V SCRs shown will handle a 1000 watt load .

•

MOTOROLA THYRISTOR DEVICE DATA
1-2-19

~---.

~

..

------~----~

--

-

~-

.--~--'

•

MOTOROLA THYRISTOR DEVICE DATA
1-2-20

CHAPTER 3
THYRISTOR DRIVERS AND TRIGGERS

Triggering a thyristor requires meeting its gate energy
specifications and there are many ways of doing this. In
general, the gate should be driven hard and fastto ensure
complete gate turn on and thus minimize di/dt effects.
Usually this means a gate current of at least three times
the gate turn on current with a pulse rise of less than one
microsecond and a pulse width greater than 10 microseconds. The gate can also be driven by a dc source as
long as the average gate power limits are met.
Some of the methods of driving the gate include:
1) Direct drive from logic families of transistors
2) Opto triac drivers
3) Unijunction transistors (UJTs) and programmable
unijunction transistors (PUTs)
4) Silicon bilateral switches (SBSs)
5) SIDACs
In this chapter we will discuss all of these, as well as
some of the important design and application considerations in triggering thyristors in general. In the chapter
on applications, we will also discuss some additional considerations relating to drivers and triggers in specific
applications.

•

0.8
z

«

'"~

I-

a::
a::
u

:::J

0.6

w

en

«

""
z

0

:::;; 0.4
:::;;
0

u
<:j-

0~==~7-~-L~--~----~--~
10-3
10- 2
10- 1
1
10
102

EMITTER CURRENT DENSITY (j. 1.
The current amplification factor, "" increases with emitter current; some typical curves are shown in Figure 3.1.
The monotonical increase of '" with IE of the device in
the blocking state makes the regeneration of current (i.e.,
turn-on) possible.
Using the two transistor analysis, the anode current,
lA, can be expressed as a function of gate current, IG, as:

(1 )

Definitions and derivations are given in Appendix I. Note·
that the anode current, lAo will increase to infinity as "'1
+ "'2 = 1. This analysis is based upon the assumption
that no majority carrier current flows out of the gate circuit. When no such assumption is made, the condition
for turn-on is given by:

IK

1 - "'1
"'2

which corresponds to "'1

+ "'2 > 1 (see Appendix I).

"~;~I~~WS~~~!li"""."""'7
MOTOROLA THYRISTOR DEVICE DATA
1-3-1

(2)

ANODE

CATHODE

(A)

(K)

jority carriers, the junction J2 becomes forward biased.
The collector emits holes back to J1 and electrons to J3
until a steady state continuity of charge is established.
During the regeneration process, the time it takes for
a minority carrier to travel across a base region is the
transit time, t, which is given approximately as:
W2i where Wi = base width
(3)

t1 = 20,.

•

(The subscript "i" can be either 1 or 2 to indicate the
appropriate base.) The time taken from the start of the
gate trigger to the turn-on of the device will be equal to
some multiple of the transit time.

GATE (G)

Figure 3.2. Schematic Structure of an SCR, Positive
Currents Are Defined as Shown by the Arrows
Current regeneration starts when charge or current is
introduced through the gate (Figure 3.2). Electrons are
injected from the cathode across J3; they travel across
the P2 "base" region to be swept out by the ~ollector
junction, J2, and thrown into the N1 base. The Increase
of majority carrier electrons in region N1 decre~s~s the
potential in region N1, so that holes from P1 are Injected
across the junction J1, into the N1 "base" region to be
swept across J2, and thrown into the P2 "base" region.
The increase in the potential of region P2 causes more
electrons to be injected into P2, thereby repeating the
cycle. Since l¥ increases with the emitter current, an increase of regeneration takes place until l¥1 + l¥2 > 1.
Meanwhile, more carriers are collected than emitted from
either of the emitters. The continuity of charge flow is
violated and there is an electron build-up on the N1 side
of J2, and a hole build-up on the P2 side. When the inert
impurity charges are compensated for by injected ma-

I I II

Di = diffusion length

CURRENT PULSE TRIGGERING
Current pulse triggering is defined as supplying current
through the gate to compensate for the carriers lost by
recombination in order to provide enough current to sustain increasing regeneration. If the gate is triggered with
a current pulse, shorter pulse widths require higher currents as shown by Figure 3.3{a). Figure 3.3{a) seems to
indicate there is a constant amount of charge required to
trigger on the device when IG is above a threshold level.
When the charge required for turn-on is plotted versus
pulse current or pulse width, there is an optimum range
of current levels or pulse widths for which the charge is
minimum, as shown in region A of Figure 3.3{b) and (c).
Region C shows that for lower current levels (i.e., longer
minimum pulse widths) more charge is required to trigger on the device. Region B shows increasing charge
required as the current gets higher and the pulse width
smaller.

100

100

'-

VAK = 10V
TA = 25'C

10 V
VAK
TA = 25'C

50

8

:g

oa:~ 20

~ HIGH UNIT

w

~

"I'

0

\

~ 10

:I:

::0
:::>

~ j4-c

Z

JP

c

en
w

"

0.2

I-I--

0"
20

,,~

IlTln-Tl- r-:I::
0.1

\

AI- f-oj4 B

~

IG THRESHoLD~

0.05

\
9

(!J
(!J

::0

LOW
UNIT

HIGH UNIT

LOW UNIT

w

(!J

2 I----

-

0.5
1
T, PULSE WIDTH (JIll)

.sP

10

Figure 3.3{a). Typical Variation of Minimum Gate
Current Required to Trigger

1

1\

@pc
ffll
a:
i!=J
JP1
"

r-.

A - ~B"
~

10
20
iG. GATE CURRENT (rnA)

50

100

Figure 3.3{b). Variation of Charge versus Gate Current

MOTOROLA THYRISTOR DEVICE DATA
1-3-2

100
VAK = 10V
T = 25'C
I
I I

\I

I
(Q

HIGH UNIT

=

it)

V
•

V

V

II

Vc

I--A

B

50

V

.-

/I

./ LOW UNIT

~

0.05

0.1

0.2

0.5

1

1
10

2

t, MINIMUM PULSE WIDTH (JLS)

Figure 3.3(cl. Variation of Charge versus Minimum
Pulse Width
The charge characteristic curves can be explained qualitatively by the variation of current amplification (aT) with
respect to emitter current. A typical variation of 0<1 and
0<2 for a thyristor is shown in Figure 3.4(a). From Figure
3.4(a), it can be deduced that the total current amplifi-

cation factor, aT = 0<1 + 0<2, has a characteristic curve
as shown in Figure 3.4(b). (The data does not correspond
to the data of Figure 3.3 - they are taken for different
types of devices.)
The gate current levels in region A of Figure 3.3 correspond to the emitter (or anode) currents for which the
slope of the aT curve is steepest (Figure 3.4(bl). In region
A the rate that aT builds up with respect to changes of
IE (or IA) is high, little charge is lost by recombination,
and therefore, a minimum charge is required for turn-on .
In region C of Figure 3.3, lower gate current corresponds to small IE (or IA) for which the slope of aT, as
well as aT itself, is small. It takes a large change in IE (or
IA) in order to build up aT. In this region, a lot of the
charge supplied through the gate is lost by recombination. The charge required for turn-on increases markedly
as the gate current is decreased to the threshold level.
Below this threshold, the device will not turn on regardless of how long the pulse width becomes. At this point,
the slope of aT is equal to zero; all of the charge supplied
is lost completely in recombination or drained out
through gate-cathode shunt resistance. A qualitative
analysis of variation of charge with pulse width at region
A and C is discussed in Appendix II.
In region B, as the gate current level gets higher and
the pulse width smaller, there are two effects that contribute to an increasing charge requirement to trigger-on
the device: (1) the decreasing slope of aT and, (21 the
transittime effect. As mentioned previously, ittakes some
multiple of the transit time for turn-on. As the gate pulse
width decreases to N (tN1 + tP2) or less, (where N is a
positive real number, tN1 = transit time of base N1, and
1.4

N·P·N SECTION "'2

-

a:

~
~

z
a

5
u:

0.6

:::;

~

«

---C

I-

1.2

H/ '\
- JL \
\
/

0.8 f-----~+--_II--_\r--_+-____l

:z 0.4
u.I
a:
a:

I

~
a:

~

z

a
0.8 ~
~

\

~

u

0.6

~

!z
u.I

a:
a:

G

0.4 ~

ci

0.21------1-:..1£-----1-----\-\---1

-'
OL-______
0.1

~

_________L_ _ _ _ _ _ _ _

1
10
IE, EMITTER CURRENT (rnA)

300

'.;.. :>r" ~.'''' "

"
~.

;,

"

0.2

L_~~

100

Figure 3.4(al. The Variation of a1 and ll2 with Emitter
Current for the Two Sections of Two Typical
Silicon Controlled Rectifiers
" •• J'> .< ;..

/

0.1

10
IE, EMITTER CURRENT (rnA)

Figure 3.4(b). Typical Variation of
Current

,,:"".'.'

MOTOROLA THYRISTOR DEVICE DATA
1-3-3

o

100

300

ar versus Emitter

Consider the gate current waveform in Figure 3.6; the
triggering pulse width is made large enough such that
T »
tfi; the threshold trigger current is shown as Ithr.
All of the charge supplied at a transient current level less
than Ithr is lost by recombination, as shown in the shaded
regions.
The gate spreading resistance (r' G) of the gate junction
varies inversely with peak current; the higher the peak
current, the smaller the gate spreading resistance. Variation of gate spreading resistance measured by the
method of Time Domain Reflectometry is plotted in Figure 3.8.
From the data of Figure 3.7, it is clear that for larger
values of capacitance a lower voltage level is required
for turn-on. The peak current of the spike in Figure 3.6 is
flV
.
given by Ipk = R
, ; the smaller flV, the smaller Ipk·
,
s + rG
Smaller Ipk in turn yields large r'G, so that r'G is dependent on the value of capacitance used in capacitance
charge triggering. This reasoning is confirmed by measuring the fall time of the gate trigger voltage and calculating the transient gate spreading resistance, r' G,

tP2 = transit time of base P2) the amount of current
required to turn-on the device should be large enough to
flood the gate to cathode junction nearly instantaneously
with a charge which corresponds to IE (or IA) high enough
to give aT > 1.

CAPACITANCE CHARGE TRIGGERING

a

Using a gate trigger circuit as shown in Figure 3.5, the
charge required for turn-on increases with the value of
capacitance used as shown in Figure 3.7. Two reasons
may account for the increasing charge characteristics:
1) An effect due to threshold current.
2) An effect due to variation of gate spreading
resistance.

TO
COMMUTATING
CIRCUIT
SCR

C

from: Rs

l

RS

.~
Figure 3.5. Gate Circuit of Capacitance Charge
Triggering

r' Gl

+ RS

Ir' Gl

+ RSICl
g

15

I I I

10

VAK=10V
15°C
t- TA

(5
ui

AV2
_
-t
r' G2 + RS e Ir' G2 ~ RSIC2
- - - - - - - -llhr
10%

2.i

r' G =

C· Results are plotted in Figure 3.9.

e- I

AVl
90%

+

As expected, r'G increases with increasing values of capacitance used. Referring back to Figure 3.6, for the same
amount of charge (C flV), the larger the (R s + r' G)C time
constant of the current spike, the more charge under the
threshold level is lost in recombination. Increasing the
value of C will increase the time constant more rapidly
than if r' G were invariant. Therefore, increasing the value
of C should increase the charge lost as shown in Figure
3.7. Note that a two order of magnitude increase in capacitance increased the charge by less than 3: 1.

1:!:t;::;;:~r~~r~r~ilii::~'r

l~tI2~
L

'"::t:
!i
ffi

...... V

'"...'"0:

;:!;

::>

;:!;

,..., ,""

Z

:!j

PULSE WIDTH, T
IIi = 2.2 Ir' Gl + RSICl

,

./

U

____~__~"

.:

,.1-"'1--

~..- ~OWUNIT

6'

SHADED AREA I = Ilr' Gl + RslIClllllthrl
SHADED AREA II = Ilr' G2 + RslIC211111hri

-

IHldH UNliT

PULSE WIDTH = 50 p,s

I I I 1111

1

Cl < C2
AV1Cl = AV2C2

100

Ilr'Gl + RSIIC111I1thrl~~BW<~

MOTOROLA THYRISTOR DEVICE DATA
1-3-7

Let us superimpose a current curve (b) on the anodeto-cathode voltage versus time curve to better understand this. If we allow the current to rise rapidly to a high
value we find by multiplying current and voltage that the
instantaneous dissipation curve (c) reaches a peak which
may be hundreds of times the steady state dissipation
level for the same value of current.
At the same time it is important to remember that the
dissipation does not take place in the entire junction, but
is confined at this time to a small volume. Since temperature is related to energy per unit volume, and since
the energy put into the device at high current levels may
be very large while the volume in which it is concentrated
is very small, very high spot temperatures may be
achieved. Under such conditions, it is not difficultto attain
temperatures which are sufficient to cause localized melting of the device.
Even if the peak energy levels are not high enough to
be destructive on a single-shot basis, it must be realized
that since the power dissipation is confined to a small
area, the power handling capabilities of the device are
lessened. For pulse service where a significant percentage of the power per pulse is dissipated during the falltime interval, it is not acceptable to extrapolate the steady
state power dissipation capability on a duty cycle basis
to obtain the allowable peak pulse power.

will tend to forward bias those parts of the transistor 1
emitter-junction closest to the base contact (gate) more
heavily, or sooner than the portions more remote from
the contact area. Regenerative action, consequently will
start in an area near the gate contact, and the SCR will
turn on first in this area. Once on, conduction will propagate across the entire junction.
LAYER

•

T2

T1

NO.3

IC)

IB)

NO.2

IB)

IC)

NO.1

IE)

NO.4

CATHOOE

GATE

IE)

Figure 3.14(a). Construction of Typical SCR

TYPICAL SCR
CONSTRUCTION
SHOWING THE
DIE IN PROPER
SCALE ...

Figure 3.14 (b)
The phenomenon of di/dt failure is related to the turnon mechanism. Let us look at some of the external factors
involved and see how they contribute. Curve 3.15(a)
shows the fall of anode-to-cathode voltage with time.
This fall follows a delay time after the application of the
gate bias. The delay time and fall time together are called
turn-on time, and, depending upon the device, will take
anywhere from tens of nanoseconds up to a few microseconds. The propagation of conduction across the entire
junction requires a considerably longer time. The time
required for propagation or equalization of conduction is
represented approximately by the time required for the
anode-to-cathode voltage to fall from the 10 percent point
to its steady state value for the particular value of anode
current under consideration (neglecting the change due
to temperature effects). It is during the interval of time
between the start of the fall of anode-to-cathode voltage
and the final equalization of conduction that the SCR is
most susceptible to damage from excessive current.
'''''i?Wj!ii~'.>i::~!II!U.~~~~

,.

'···i"'~&.;~\Mg!E

1
TIME 1j.tS)

Figure 3.15. Typical Conditions Current Pulse

Fast-Rise, High

The final criterion for the limit of operation is junction
temperature. For reliable operation the instantaneous
junction temperature must always be kept below the
maximum junction temperature as stated on the manufacturer's data sheet. Some SCR data sheets at present
include information on how to determine the thermal
response of the junction to current pulses. This information is not useful, however, for determining the limitations of the device before the entire junction is in conduction, because they are based on measurements made
with the entire junction in conduction.

Yllii& .ki.:J£"'Nf" ~ •.

%'!?·1t.i~~·~·~,!!'t-':~~'*0.ii·:§

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W"·Y~ldf.'~·£.J ~.'

'.

"1'>~?~~"TJ1"~~~·ffi'"",<.:~0lo1li~~~·~rJ!?!~*:tfi:~an'Cfr,~~~ip.~,c..,..J j :J~tJP-~r.'!7'iIII<"',,~i1. '..~',

MOTOROLA THYRISTOR DEVICE DATA
1-3-8

At present, there is no known technique for making a
reasonably accurate measurement of junction temperature in the time domain of interest. Even if one were to
devise a method for switching a sufficiently large current
in a short enough time, one would still be faced with the
problem of charge storage effects in the device under
test masking the thermal effects. Because of these and
other problems, it becomes necessary to determine the
device limitations during the turn-on interval by destructive testing. The resultant information may be published
in a form such as a maximum allowable current versus
time, or simply as a maximum allowable rate of rise of
anode current (di/dt).

70
60

~ 50

",-

:;:,2:

~~
<"-

40

~5

30

!Z~

en a:
~~
0

"-

20

PEA~ AN06E CURIRENT ~ 500 ~

b

# \ I"..
ff ~
ff

""~

IGT = 17mA

~ I'..

~IGT=2A

10
0
0

Understanding the dildt failure mechanism is part of
the problem. To the user, however, a possible cure is
infinitely more important. There are three approaches
that should be considered.
Because of the lateral base resistance the portion of
the gate closest to the gate contact is the first to be turned
on because it is the first to be forward biased. If the
minimum gate bias to cause turn-on of the device is used,
the spot in which conduction is initiated will be smallest
in size. By increasing the magnitude of the gate trigger
pulse to several times the minimum required, and applying it with a very fast rise time, one may considerably
increase the size of the spot in which conduction starts.
Figure 3.16(a) illustrates the effect of gate drive on voltage
fall time and Figure 3.16(b) shows the improvement in
instantaneous dissipation. We may conclude from this
that overdriving the gate will improve the di/dt capabilities of the device, and we may reduce the stress on the
device by doing so.

I'v-

I~

0.5

1.5

2

2.5
3
t, TIME I/AS)

3.5

4.5

Figure 3.16Ib). Effect of Gate Drive On
Turn-On Dissipation
If the application should require a rate of current rise
beyond the rated dildt limit of the device, then another
approach may be taken. The device may be turned on to
a relatively low current level for a sufficient time for a
large part of the junction to go into conduction; then the
current level may be allowed to rise much more rapidly
to very high levels. This might be accomplished by using
a delay reactor as shown in Figure 3.17. Such a reactor
would be wound on a square loop core so that it would
have sharp saturation characteristic and allow a rapid
current rise. It is also possible to make use of a separate
saturation winding. Under these conditions, if the delay
is long enough for the entire junction to go into conduction, the power handling capabilities of the device may
be extrapolated on a duty cycle basis.

350
u;

t; 300

~
w

C>

<

\\

t;
> 200

0

\\

w

C

0

:J:

!;;(

150

~ 100
~

z
<

Figure 3.17. Typical Circuit Use of a Delay Reactor

~ ,<",-iGT=2A
~ ~IGT = 17mA

U

0

PE~K AN6DE CJRREN~ = 5~ A

\

250

50

o
o

0.5

1.5

~
2

2.5
3
t. TIME I/AS)

WHY AND HOW TO SNUB THYRISTORS
3.5

Inductive loads (motors, solenoids, etc.) present a
problem for the power triac because the current is not in
phase with the voltage. An important fact to remember
is that since a triac can conduct current in both directions,
it has only a brief interval during which the sine wave
current is passing through zero to recover and revert to
its blocking state. For inductive loads, the phase shift
between voltage and current means that at the time the
current ofthe power handling triac falls below the holding
current and the triac ceases to conduct, there exists a
certain voltage which must appear across the triac. If this
voltage appears too rapidly, the triac will resume con-

4.5

Figure 3.16Ia). Effect of Gate Drive on Fall Time

A very straightforward approach is to simply slow
down the rate of rise of anode current to insure that it
stays within the device ratings. This may be done simply
by adding some series inductance to the circuit.

MOTOROLA THYRISTOR DEVICE DATA
1-3-9

•

•

duction and control is lost. In order to achieve control
with certain inductive loads, the rate of rise in voltage
(dv/dt) must be limited by a series RC network placed in
parallel with the power triac as shown in Figure 3.18. The
capacitor Cs will limit the dv/dt across the triac.
The resistor RS is necessary to limit the surge current
from Cs when the triac conducts and to damp the ringing
of the capacitance with the load inductance LL. Such an
RC network is commonly referred to as a "snubber."
Figure 3.19 shows current and voltage waveforms for
the power triac. Com mutating dv/dt for a resistive load
is typically only 0.13 V//Ls for a 240 V, 50 Hz line source
and 0.063 V//Ls for a 120V, 60 Hz line source. For inductive
loads the "turn-off" time and commutating dv/dt stress
are more difficult to define and are affected by a number
of variables such as back EMF of motors and the ratio of
inductance to resistance (power factor). Although it may
appear from the inductive load that the rate or rise is
extremely fast, closer circuit evaluation reveals that the
commutating dv/dt generated is restricted to some finite
value which is a function of the load reactance LL and
the device capacitance C but still may exceed the triac's
critical commutating dv/dt rating which is about 50 V//Ls.
It is generally good practice to use an RC snubber network
across the triac to limit the rate of rise (dv/dt) to a value
below the maximum allowable rating. This snubber network not only limits the voltage rise during cOmmutation
but also suppresses transient voltages that may occur as
a result of ac line disturbances.
There are no easy methods for selecting the values for
RS and Cs of a snubber network. The circuit of Figure
3.18 is a damped, tuned circuit comprised of RS, CS, RL
and LL, and to a minor extent the junction capacitance
of the triac. When the triac ceases to conduct (this occurs
every half cycle of the line voltage when the current falls
below the holding current), the triac receives a step
impulse of line voltage which depends on the power factor of the load. A given load fixes RL and LL; however,
the circuit designer can vary RS and CS. Commutating
dV/dt can be lowered by increasing Cs while RS can be
increased to decrease resonant "over ringing" of the
tuned circuit.

---t--;---'\----+-+---4---'\-+-!-_I_-i----\r--AC LINE
\

VOLTAGE

\

---j'--lf--''t;--+--f'--lr---'H+-+--+--AC CURRENT

~-I'="""''I-~...r==~-+-~-+---'~VOLTAGE

ACROSS

to

POWER TRIAC

TlME-

------------,IF(ONI
- - - - - - - . , . - - - - - ' - - - - IF(OFFI

-i---'~\----+-+'--I---'\____~_I_~---\--ACLINE

I

I

\

VOLTAGE

---,l'--'--'t---J'---'H-+--+---AC CURRENT
TltROUGH

POWER TRIAC

-===I"""'='lII==....,==""*~..I-___\--VOLTAGE

\

TlME-

ACROSS
POWER TRIAC

Inductive Load

Figure 3.19. Current and Voltage Waveforms
During Commutation
ac voltage source. The following differential equation
can be obtained by summing the voltage drops around
the ci rcu it:

Cs

AC

r------,

Figure 3.18. Triac Driving Circuit - with Snubber

BASIC CIRCUIT ANALYSIS
Figure 3.20 shows an equivalent circuit used for analysis, in which the triac has been replaced by an ideal
switch. When the triac is in the blocking or nonconducting state, represented by the open switch, the
circuit is a standard RLC series network driven by an

in which i(t) is the instantaneous current after the switch
opens, qc(t) is the instantaneous charge on the capacitor,
VM is the peak line voltage, and 


...........

r--.....
...............

0.3

r--.....

perhaps the collector leakage of a driving transistor. Such
current can readily be bypassed by a suitably chosen
RGK. The VGT of the SCR at the temperature in question
can be estimated from Figure 3.25, an Ohm's Law calculation made, and the resistor installed to define this
"won't fire" current. This is a repeatable design well in
the control of the equipment designer.
HOLDING CURRENT, IH
The holding current of an SCR is the minimum anode
current required to maintain the device in the on state.
It is usually specified as a maximum for a series of devices
(for instance, 5 mA maximum at 25°C for the 2N6236
series). A particular device will turn off somewhere
between this maximum and zero anode current and there
is perhaps a 20-to-1 spread in each lot of devices.
Figure 3.26 shows the holding current increasing with
decreasing RGK as the resistor siphons off more and
more of the regeneratively produced gate current when
the device is in the latched condition.
NOISE IMMUNITY
Changes in electromagnetic and electrostatic fields
coupled into wires or printed circuit lines can trigger
these sensitive devices, as can logic circuit glitches. The
result is more serious than with a transistor since an SCR
will latch on. Careful wire harness design (twisted pairs
and adequate separation from high-power wiring) and
printed circuit layout (gate and return runs adjacent to
one another) can minimize potential problems. Another
help is the gate-cathode resistor since, with a one-kilohm
resistor, 100 ",A to 1 mA of noise current is required to
generate sufficient voltage to fire the device. To serve
this purpose RGK must be mounted right at the gatecathode terminals of the SCR.

...............

0.2
~

0.1

o

-40

,...:

\

:z

-20

80

100

w
a::
a::
:::>
'-'

120

~

9a

Figure 3.25. VGT versus TJ (Typical)

4

::J:
Cl

\

"

~

GATE CURRENT, IGT(min)
SCR manufacturers sometimes get requests for a
sensitive-gate SCR specified with an IGT(min), that is, the
maximum gate current that will not fire the device. This
requirement conflicts with the basic function of a sensitive gate SCR, which is to fire at zero or very low gate
current, IGT(max). Production of devices with a measurable IGT(min) is at best difficult and deliveries can be
sporadic!
One reason for an IGT(min) requirement might be
some measurable off-state gating circuit leakage current,

\

t......

~

a::

1' ....

az

o

100

500

5K

Figure 3.26. IH versus RGK (Typical)

MOTOROLA THYRISTOR DEVICE DATA
1-3-13

--

1K
RGK (OHMS)

10 K

•

Since the MOC3011 looks essentially like a small optically triggered triac, we have chosen to represent it as
shown on Figure 3.28.

DRIVERS: THE MOCl011 NON-ZERO
CROSSING TRIAC DRIVER

•

The MOC3011 non-zero crossing triac driver consists
of a gallium arsenide infrared LED optically exciting a
silicon detector chip, which is especially designed to drive
triacs controlling loads on a 115 Vac power line. The
detector chip is a complex device which functions in
much the same manner as a small triac, generating the
signals necessary to drive the gate of a larger triac. The
MOC3011 shows a low power exciting signal to drive a
high power load with a very small number of components, and at the same time provides practically complete
isolation of the driving circuitry from the power line.
The construction of the MOe3011 follows the same
highly successful coupler technology used in Motorola's
broad line of plastic couplers (Figure 3.27). The planar
lead frame with a plastic "dome" undermold provides a
stable dielectric capable of sustaining 7.5 kV between the
input and output sides of the device. The detector chip
is passivated with silicon nitride and uses Motorola's
annular ring to maintain stable breakdown parameters.

White
Mold
Compound

1----1--04
Figure 3.28. Schematic Representation of
M0C3011 and MOC3010

TRIAC DRIVING REQUIREMENTS
Figure 3.29 shows a simple triac driving circuit using
the MOC3011. The maximum surge current rating of the
MOC3011 sets the minimum value of Rl through the
equation:

Dome

Rl(min) = Vin(pk)f1.2 A
If we are operating on the 115 Vac nominal line voltage,
Vin(pk) = 180 V, then
R1(min)

= Vin(pk)f1.2 A = 150 ohms.

In practice, this would be a 150 or 180 ohm resistor. If
the triac has IGT = 100 mA and VGT = 2 V, then the
voltage Yin necessary to trigger the triac will be given by
VinT = Rl • IGT + VGT + VTM = 20 V.
Co-Planar Isolator Package

Figure 3.27. Motorola "Dome" Coupler Package

BASIC ELECTRICAL DESCRIPTION
The GaAs LED has nominal 1.3'V forward drop at 10
mA and a reverse breakdown voltage greater than 3 V.
The maximum current to be passed through the LED is
50 mA.
The detector has a minimum blocking voltage of 250
Vdc in either direction in the off state. In the on state, the
detector will pass 100 mA in either direction with less
than 3 V drop across the device. Once triggered into the
on (conducting) state, the detector will remain there until
the current drops below the holding current (typically 100
!LA) at which time the detector reverts to the off (nonconducting) state. The detector may be triggered into the
on state by exceeding the forward blocking voltage, by
voltage ramps across the detector at rates exceeding the
static dvfdt rating, or by photons from the LED. The LED
is guaranteed by the specifications to trigger the detector
into the on state when 10 mA or more is passed through
the LED. A similar device, the MOC3010, has exactly the
same characteristics except it requires 15 mA to trigger.

RESISTIVE LOADS
When driving resistive loads, the circuit of Figure 3.29
may be used. Incandescent lamps and resistive heating
elements are the two main classes of resistive loads for
which 115 Vac is utilized. The main restriction is that the
triac must be properly chosen to sustain the proper inrush
loads. Incandescent lamps can sometimes draw a peak
current known as "flashover" which can be extremely
high, and the triac should be protected by a fuse or rated
high enough to sustain this current.

150
R1
10
rnA

MOC3011

Figure 3.29. Simple Triac Gating Circuit

~"l',f;;j.Jl~U.!I}~4PN'~·$:tJfff1:t~~.;~~iL~:~:t:.~iffw~,~;~r~1
MOTOROLA THYRISTOR DEVICE DATA
1-3-14

bers - one for the triac and one for the MOC3011. The
triac snubber is dependent upon the triac and load used.
In many applications the snubber used for the MOC3011
will also adequately protect the triac.
In order to design a snubber properly, one should know
the power factor of the reactive load, which is defined as
the cosine of the phase shift caused by the load. Unfortunately, this is not always known, and this makes snubbing network design somewhat empirical. However a
method of designing a snubber network may be defined,
based upon a typical power factor. This can be used as
a "first cut" and later modified based upon experiment.
Assume an inductive load with a power factor of PF =
0.1 is to be driven. The triac might be trying to turn off
when the applied voltage is given by

LINE TRANSIENTS - STATIC dv/dt
Ocassionally transient voltage disturbance on the ac
line will exceed the static dv/dt rating of the MOC3011.
In this case, it is possible that the MOC3011 and the associated triac will be triggered on. This is usually not a
problem, except in unusually noisy environments,
because the MOC3011 and its triac will commute off at
the next zero crossing of the line voltage, and most loads
are not noticeably affected by an occasional single halfcycle of applied power. See Figure 3.31 for typical dv/dt
versus temperature curves.
INDUCTIVE LOADS - COMMUTATING dv/dt
Inductive loads (motors, solenoids, magnets, etc.) present a problem both for triacs and for the MOC3011
because the voltage and current are not in phase with
each other. Since the triac turns off at zero current, it may
be trying to turn off when the applied current is zero but
the applied voltage is high. This appears to the traic like
a sudden rise in applied voltage, which turns on the triac
if the rate of rise exceeds the commutating dv/dt of the
triac or the static dv/dt of the MOC3011.

•

Vto = Vpksin 
--I

Rl

TRIAC

1--o--'V>.Jv-......--'VV\.,.-'"

MOC3011

Cl

IGT

R2

C

15 rnA

2400

0.1

30 rnA

1200

0.2

50 rnA

800

0.3

Figure 3.30. Logic to Inductive Load Interface
0.24

4
- - STAnC dv/d!
- - - COMMUTATING dv/d!

~1. 6

~
u

~ 1.2

Iii

= 2 kO

RL

- +-+I

~ 0.8

RL

25 30

0.16~

~

= 5100

40

M0C3011

'";:::
0.12 g

4

;z

~

-- - - .........

0.4

o

~

I'.

- -"' -

VCC

0.20

2 .........

f.... I-

f'

60
70
80
50
TA. AMBIENT TEMPERATURE (DC)

::;;
::;;

l- t--_
~ t-

90

0.088

.... 0.04
0
100

~
"C

n n n n+

5V

JUUU~
I COMMUTATING
I STAnC I

t--

dv/dt

--i- dv/d!-I

dv/d! = 8.9 f Vin

1) For a more thorough discussion of snubbers. see page 1-3-9.

Figure 3.31. dv/dt versus Temperature

•

7~
••••
!I.!illJ.lI.iII[j.II• • •IIIII~
• •' •.11......111_._.
MOTOROLA THYRISTOR DEVICE DATA
1-3-15

INCREASING INPUT SENSITIVITY
In some cases, the logic gate may not be able to source
or sink 15 mA directly. CMOS, for example, is specified
to have only 0.5 mA output, which mustthen be increased'
to drive the MOC3011. There are numerous ways to
increase this current to a level compatible with the
MOC3011 input requirements; an efficient way is to use
athe MC14049B shown in Figure 3.32. Since there are six
such buffers in a single package, the user can have a
small package count when using several MOC3011's in
one system.

Setting this equal to the worst case dvldt (static) for the
MOC3011 which we can obtain from Figure 3.33 and solving for R2C:
dvldt (TJ = 70°C) = 0.8 V/JLS = 8 x 103
R2C = Vto/(dv/dt) = 180/(8 x 105) = 230 x 10- 6
The largest value of R2 available is found, taking into
consideration of triac gate requirements. If a sensitive
gate triac is used, such as 2N6071B, IGT = 15 mA @
-40°C. If the triac is to be triggered when Vin "" 40 V
(Rl + R2) = Vin/lGT = 4010.015 = 2.3 k
If we let R2 = 2400 ohms and Cl = 0.1 p.F, the snubbing
requirements are met. Triacs having less sensitive gates
will require that R2 be lower and Cl be correspondingly
higher as shown in Figure 3.30.

INPUT PROTECTION CIRCUITS
In some applications, such as solid state relays, in
which the input voltage varies widely, the designer may

Vcc
R

180

M0C3011

2.4 k

0.1 p.F

115Vac

4

Vee

R

HEX BUFFER

5V

n
600 n
910 n

MC75492

10 V
15 V

220

2N60718

MC75492
MC14049B

Figure 3.32. MOS to ac Load Interface

INPUT CIRCUITRY
RESISTOR INPUT
When the input conditions are well controlled, as for
example when driving the MOC3011 from a TTL, OTl, or
HTl gate, only a single resistor is necessary to interface
the gate to the input lED of the MOC3011. This resistor
should be chosen to set the current into the lED to be a
minimum of 10 mA but no more than 50 mA. 15 mA is
a suitable value, which allows for considerable degradation of the lED over time, and assures a long operating
life for the coupler. Currents higher than 15 mA do not
improve performance and may hasten the aging process
inherent in lED's. Assuming the forward drop to be 1.5
Vat 15 mA allows a simple formula to calculate the input
resistor.

Ri = (VCC - 1.5)/0.015
Examples of resistive input circuits are seen in Figures
3.28 and 3.32.

niBil

want to limit the current applied to the lED of the
MOC3011. The circuit shown in Figure 3.33 allows a noncritical range of input voltages to properly drive the
MOC3011 and at the same time protects the input lED
from inadvertent application of reverse polerity.

150

MOC3011

Figure 3.33. MOca011 Input Protection Circuit

l.alllllllllllM!!f• •:. .IIII.Wntlftl.8R. . . .
MOTOROLA THYR(STOR DEVICE DATA
1-3-16

LED LIFETIME
All light emitting diodes slowly decrease in brightness
during their useful life, an effect accelerated by high temperatures and high LED currents. To allow a safety margin
and insure long service life, the MOC3011 is actually
tested to trigger at a value lower than the specified 10
mA input threshold current. The designer can therefore
design the input circuitry to supply 10 mA to the LED and
still be sure of satisfactory operation over a long operating lifetime. On the other hand, care should be taken
to insure that the maximum LED input current (50 mAl
is not exceeded or the lifetime of the MOC3011 may be
shortened.

-40 -25

-6

--40,;~

~

15V ....--_.~
T L __ ...J
PB

0.15

,,

---

0.05

L5~1--3~00--5~10----~IKRL
Figure 3.34(b). Commutating dvldt versus Ambient
Temperature and Load Resistance for the MOC3011
and MOC3021

in conjunction with a triac, to control loads on the ac line.
Common-mode dv/dt is another significant parameter
with non-zero crossing triac drivers. A common-mode
spike on either the LED or detector could trigger the triac
drivers. Thus, a large common-mode dv/dt rating is
essential when using these devices in an electronically
noisy environment. The test circuit used to measure this
parameter is shown in Figure 3.36. Typical values exceed
5000 V/p$ at 100°C, which is attained through the internal
structure of the triac drivers.

.,.. 470!!

15V

HV
ItO!!

II MERCURY--;-50.J.kn-"?--r""-

+5.6V

FUNCTION
GENERATOR
OUTPUT

OV

•

,,

,,
,,
TA = 25"C
(COMMUTATING dvldl versus RU

0.10

1

I
I

,

~

Figure 3.34(a) shows the com mutating dv/dttest circuit,
and Figure 3.34(b) commutating dv/dt versus load resistance and ambient temperature for the non-zero crossing
triac drivers.
The static dv/dt test circuit is shown in Figure 3.35(a).
Static dv/dt versus ambient temperature and load resistance is graphed in Figures 3.35(a) and 3.35(b) for the
MOC3011 and MOC3021, respectively. The static dv/dt is
of primary importance when the triac driver is being used

I
I

\

!

~

75

50

RL = 300.0
ICOMMUTATING dv/dt versus TAl

'/
,,

0.20

TEST RESULTS ON THE MOC3011 AND MOC3021

FUNCTION
r DUT-,
GENERATOR ....- - - - - - - ' - ,
I

,,
,

0.25

25

~~ED

SIGNAL IN

~_

0.001 /L F

.tV'\..

HV
HV

_$_'
_

_J DUT

RL

470 n

= 200 Vdc FOR MOC301013011
= 400 Vdc FOR MOC302013021

~
o
:
0.63~V

TEST PROCEDURE THE FREQUENCY OF THE TRAINGULAR WAVEFORM IS INCREASED UNTIL THE
DUT REMAINS ON AFTER BEING TRIGGERED BY THE PUSHBUnON. THE FRE·
QUENCY IS THEN DECREASED UNTIL THE DUT TURNS OFF AND tp IS MEASURED
ATTHIS POINT.

dv/dl = 22.4 V IIp

VOLTAGE APPLIED TO DUT -

o ~ n . 50% DUTY CYCLE
-~16ms

TEST PROCEDURE TURN THE DUT ONE WHILE APPLYING SUFFICIENT dv/dl TO ENSURE THAT IT
REMAINS ON EVEN AFTER THE TRIGGER CURRENT IS REMOVED. THEN DECREASE
dv/dl UNTIL THE DUT TURNS OFF. MEASURE lIlC, THE TIME IT TAKES TO RISE TO
0.63 HV, AND DIVIDE 0.63 HV BE lIlC TO GET dvldt.

MOTOROLA THYRISTOR DEVICE DATA
1-3-17

HV

'---'
lIlC

Figure 3.35(a). Static dv/dt Test Circuit

Figure 3.34(a). Com mutating dv/dt Test Circuit

PB

..L_ 15 V

-40 -25
25

50

25

75

DRIVERS: THE MOC3061 AND MOC3081
ZERO-CROSSING TRIAC DRIVERS

lOO
TA

Many new applications in the power control field were
made possible by Motorola's introduction of the
MOC3011 and MOC3021 optically isolated triac drivers.
These six-pin, solid-state devices, with an input current
of as little as 15 mA. can supply up to 100 mA drive
current to switch triacs on either a 115 Vac or 230 Vac
power line. Thus, high power ac loads can be controlled
from low power circuitry, while an isolation voltage of
7.5 kV is maintained from input to output.
Increased flexibility in power control is possible with
the MOC3061 and MOC3081 optically isolated(, zerocrossing triac drivers. These new devices offer a unique
zero-crossing feature, guaranteeing the triac driver will
only 'switch on' between - 25 V and + 25 V. This insures
lower generated noise and inrush currents and extends
the life of incandescent lamp filaments. The circuitry necessary for zero-crossing is also responsible for improved
device parameters, allowing the use of the MOC3061 and
MOC3081 in a wide range of applications.
Zero-crossing triac drivers are currently being used in
electrically noisy industrial environments, where control
signals may travel several hundred yards before reaching
the MOC3061 or MOC3081 triac driver. This is due to the
improved common-mode noise immunity of these
devices. Their large static dv/dt rating eliminates the need
for snubber networks and guarantees that the zerocrossing triac drivers cannot be unintentionally triggered
'on: by ac line noise. This is particularly important when
the triac driver is used to control industrial equipment
where inadvertent operation may cause damage or
injury.

20
,

\""/

RL = 10 kO
(STATIC dvldt versus TAl

10

•

"""

-

7

"

TA = 25°C
'-__ _
(STATIC dvldt versus RLI
...............
RL
~2-K~5K~I-0K~--~20~K--------~40K

Figure 3.35(b). Static dv/dt versus Ambient
Temperature and Load Resistance for the MOC3011
-40 -25

25

50

75

100

60r-----~--~--~----~~

50

40

RL = 10 kO
(STATIC dvldt versus TAl

,

\'/
,

,,

20

10

TA = 25°C
(STATIC dvldt versus RLI

"-

ELECTRICAL CHARACTERISTICS

20K

5K 10K

Figure 3.35(c). Static dv/dt versus Ambient
Temperature and Load Resistance for the MOC3021

15 V

HV = 400 V

II MERCURY
WETTED
RELAY

SIGNAL IN

I 10 ~lo

...n.n..

100 pF

6V

I Uf~_tJDUT
510

VOLTAGE APPLIED TO DUT50% DUTY CYCLE 400 V

!. IL.JL

~
o ' :

0.63~V

HV

-16ms'----'
7JlC
TEST PROCEDURE APPLY SUFFICIENT COMMON·MODE dvldt TO TRIGGER THE DUT. MEASURE 7JlC.
THE TIME IT TAKES TO RISE TO 0.63 HV AND DIVIDE 0.63 HV BY '1lc TO GET dvldt.

Figure 3.36. Common-Mode dv/dt Test Circuit

The GaAs LED has a maximum forward voltage drop
of 1.5 V at 30 mA and a reverse breakdown voltage of
3 V or more. The recommended LED current to trigger
the detector (either the MOC3061 or MOC3081) is 15 mA.
The minimum LED pulse width capable of triggering the
detector is typically 10 microseconds at both 15 mA for
the MOC3061 and MOC3081.
The MOC3061 detector has a minimum blocking voltage of 600 Vdc in either direction in the 'off' state whereas
the minimum blocking voltage of the MOC3081 is 800
Vdc. Once triggered 'on: either detector will pass 100 mA
with less than 3 V drop across the device. Both will remain
in this conducting state until the current drops below the
holding current (typically 100 p.,A for the MOC3061 and
the MOC3081) at which time the detector returns to the
non-conducting state.
It may also be possible to inadvertently trigger the
detector into the 'on' state by exceeding the forward
blocking voltage or by voltage ramps across the detector
exceeding the static dv/dt rating. These voltage ramps
usually result from disturbances on the ac power line.
However, since the typical static dv/dt rating of the zerocrossing triac driver is in excess of 1000 V/microsecond

MOTOROLA THYRISTOR DEVICE DATA
1-3-18

at 100°C, ac line noise poses little or no problem for these
devices. As a result, the need for snubber networks on
the triac drivers, to reduce the speed of voltage ramps,
is eliminated. Figure 3.35 shows the static dv/dt test
circuit.
Once the triac controlled by a triac driver is switched
to the conducting state, very little voltage appears across
MT1 and MT2, the main terminals of the triac (Figure
3.37). Since there is also a small voltage drop from the
gate to T2, the total voltage across the triac driver terminals T1 and T2 is very small - typically less than 2 V.
Thus, the detector of the triac driver will conduct very
little current and will, for practical purposes, be 'off.' This
condition has very important implications when a triac
driver and triac are being used to control an inductive
load.

values exceed 5000 V/}J's at 100°C. This value is attained
through the inhibiting action of the internal circuitry of
the zero-crossing triac drivers.

-25
25
50
75
100
-40
0.35,--+-----

;;;;
w

>

Changes in the peak voltage would be very undesirable
in applications like timers and oscillators, the accuracy
of which depends on the repeatability of Vp.
Vo is defined as the forward voltage drop of the emitter
junction and since it is essentially equivalent to the forward voltage drop of a silicon diode, the value of Vo is
dependent both on forward current and temperature. Vo
can be measured several ways, but it is important to hold
the emitter current near Ip when the measurement is
made since it really is Vo at Ip that is required in equation
6. One simle way of measuring Vo is shown in Figure
3.46. A constant current equal to Ip is applied between
the emitter and base-one, and a potentiometric voltmeter
is used to measure the voltage from emitter to base-two.
This type of voltmeter has essentially infinite input
impedance when the meter is "nulled" and there is no
current flowing in the base-two lead. The voltage measured is therefore equal to VO.

12

V

w

«
'"
'::i

POTENTIOMETRIC
VOLTMETER

J

0

>

ffi

II

ff-

~

Vo

)

Figure 3.46. Circuit for Measuring VD

V

o
-10

- 8

- 6

- 4

- 2

2

Figure 3.47 shows Vo as a function of temperature for
an emitter current of 1 /LA. The variation of Vo is essentially linear over the temperature range considered and
is equal to - 2.7 mV;oC. The diode voltage drop therefore
decreases with increasing temperature and Vo can be
written as:

10

EMITTER CURRENT IE IN AMPERES X 10 -10

Figure 3.45(a). Static Emitter Characteristic

Vo
20
18
~ 16
0

>

~

~
w

'"«'::i
0

>

t

,

r

T

=

VON - (T - 25) • KO

where VON is the value of Vo at T A = 25°C and KO
- 2.7 mV/oC. (Note that KO is current dependent and the
value for KO given applies only at 1 /LA.)

, VB2Bl = 20 VOLTS
T = 25°C

14
12
10

0.7
10

8

~

"'

~
to

0.6

§? O. 5

..............
...........

ii§
~ 0.4

10 13

10 11

10 9

'"~ o.3
a
;;:; 0.2
o
'"Ci o. 1

EMITTER CURRENT IE IN AMPERES

Figure 3.45(b). Static Emitter Characteristic

0

THE DIODE VOLTAGE DROP VD
Some of the most important characteristics of the UJT
are those that appear in the formula for peak voltage:
Vp

=

Vo

+ rNB1B2

(6)

...........

b-..,

~
-55

o
25
50
TEMPERATURE IN °C

75

125

Figure 3.47. Diode Voltage VD versus Temperature for
the Annular Unijunction

MOTOROLA THYRISTOR DEVICE DATA
1-3-25

~~

r--.....

f"--..

w

10 7

I

= 1 !LA

VARIATION = -2.7

1

THE INTRINSIC STANDOFF RATIO
The intrinsic standoff ratio, defined by:
'1

•

Vp - VD

rBl

VB2Bl

rBB

=

(7)

is generally believed to be essentially independent of
temperature variations. However, this is not true. Figure
3.48 shows typical variations of '1 with temperature for
unijunctions from three different manufacturers. There
may be several reasons why '1 varies with temperature;
the interbase resistance rBB might not have a uniform
temperature coefficient throughout the base-two, baseone region, or the temperature might not be uniform over
the entire interbase resistance. Surface recombination
might also be a factor.

constant as the temperature is increased. The lattice mobility decreases with increasing temperature due to increased lattice scattering, and hence the resistivity will
increase. As the temperature is increased beyond 125'C,
the impurity concentration becomes swamped by carriers produced by thermal generation, and the resistivity
decreases rapidly as the temperature is increased. The
measurements were performed on a pulsed basis to
avoid heating due to power dissipation. In the temperature region from 0 to + 125'C, the increase in rBB with
temperature is essentially linear, and rBB can be expressed by the formula:

+ (T - 25)· Kr

rBB = rBBN

where rBBN is the value of rBB at 25'C, and Kr is given

1.10
B
A
1.05 - C ~

- ---...::::::-:::::::

I="

Ea

N

::;

«
::;;;

'"
0
z

0.95
0.90

~C

0.85
0.80

A (MOTOROLA)
B

-55

-25

+25
+50
TEMPERATURE 'c

+75

+100

+ 150

+ 125

Figure 3.48. Normalized Intrinsic Standoff Ratio versus Temperature for 3 Different Manufacturers lA, B, & C)

'1 can be measured directly or it can be calculated from
equation 7 when Vp and VD are known.
The curve A-A in Figure 3.48 represents the Motorola
annular UJT, and the variation of '1 is relatively linear
with temperature over the temperature region considered. '1 can therefore be expressed by the formula:
'1 = '1N - (T - 25) K'1
where '1N is the value of '1 at 25'C, and K'1 is a temperature
coefficient expressed in %I'C. For the Motorola annular
0.06%
.
devices K'1 "" ~ '1N
The intrinsic standoff ratio is also slightly dependent
on VB2Bl, but the variation is so small that for all practical
purposes '1 can be said to be independent of voltage.

as a %I'C variation of rBBN. For the annular devices Kr
is found to be:
Kr = 0.8%/C • rBBN
In addition, rBB is also found to vary with interbase
voltage VB2Bl. A typical curve is shown in Figure 3.50
where rBBN is normalized to the value of rBB for VB2Bl
12

<;
;;;

. / "'\.

10

""
~

VV

z~
~
CJ)

ffi

...V

'"
w

THE INTERBASE RESISTANCE rBB

CJ)

;:a

The resistance from base-two to base-one is highly
temperature dependent. A typical rBB vs. temperature
characteristic curve for VB2Bl = 3 volts is shown in
Figure 3.49. At very low temperatures, near absolute zero,
few of the impurity atoms in the semiconductor material
are ionized and the resistivity of the doped silicon is quite
high. At - 55'C however, most of the impurity atoms are
fully ionized, and the carrier concentration is relatively

~

\

/'

'"
~

(TYPICAL CURVE)

;;;

I 2N48jl-53 I
- 55

- 25

0

25

50

75

100

125

150

AMBIENT TEMPERATURE °C

Figure 3.49. Interbase Resistance rBB versus
Temperature

MOTOROLA THYRISTOR DEVICE DATA
1-3-26

\

//

175

/'

= 3 volts, the voltage usually specified on the manufacturer's data sheet.
This increase in rBB with voltage is in part due to a
current limiting effect in the base one contact area. Knowing rBB at VB2B1 = 3 V for an annular device, rBB at any
other value of VB2B1 can be found with a reasonable
degree of accuracy from Figure 3.50. These readings have
also been obtained by a low duty-cycle pulse method in
order to avoid heating due to power dissipation. TJ is
therefore approximately equal to TA. For normal operating conditions, the temperature rise in the base-one,
base-two region must be calculated and the change in
rBB due to temperature taken into account.

1.5
z

~
a:

--.......

1.4

I-

U

1.3

a
~1.2
00
::'i:;1.1

w w

~~

~

z~

w

U

:z

1.3

/

II

~ ~


~o

1.2

wI-


w
a:
a:


10 k

r--

0.3
0.2

I-

20V

0.1

•

1

I

- ----

0.6

+

-..=-

r

I

1

1

:©

2N4851

CEl

27

nJ

OUTPUT

0.1
CAPCITANCE CE IN /LF

0.01

Figure 3.58(a). Turn-On Time versus Emitter
Capacitance CE

120

!

:;;;
!;:ig
i=
~

~

9
z

a:

:::>

100

80
60
40

20V

1
1
-+

10k

t©
~

CE;:
1'" 27 n

J

~~
2N4851
OUTPUT

b----::: l-

I-

20

o

I

0.01

I

I

-

V

V

0.1
CAPACITANCE CE IN /LF

Figure 3.58(b). Turn-Off Time versus Emitter
Capacitance CE

DRIVERS: PROGRAMMABLE UNIJUNCTION
TRANSISTORS

ANODE

A

IAI

The programmable unijunction transistor (PUT) is a
four layer device similar to an SCR except that the anode
gate rather than the cathode gate is brought out. It is
normally used in conventional unijunction transistor
(UJT) circuits. The characteristics of both devices are similar, but the triggering voltage of the PUT is programmable and can be set by an external resistive voltage
divider network. The PUT is faster and more sensitive
than the UJT. It finds limited application as a phase control element and is most often used in long duration timer
circuits. In general, the PUT is more versatile and is a
more economical device than the UJT and will replace it
in many applications.

OPERATION OF THE PUT
The PUT has three terminals, an anode (A), gate (G),
and cathode (K). The symbol and a transistor equivalent
circuit are shown in Figure 3.59. As can be seen from the
equivalent circuit, the device is actually an anode-gated
SCR. This means that if the gate is made negative with
respect to the anode, the device will switch from a blocking state to its on state.

~GATE

T '"
(KI
CATHODE

Figure 3.59(a).
PUT Symbol

K

Figure 3.59(b).
Transistor Equivalent

Since the PUT is normally used as a unijunction transistor (UJT), the UJT terminology is used to describe its
parameters. In order to operate this device as a UJT, an
external reference voltage must be maintained at the gate
terminal. A typical relaxation type oscillator circuit is
shown in Figure 3.60(a). The voltage divider shown is a
typical way of obtaining the gate reference. In this circuit,
the characteristic curve looking into the anode-cathode
terminals would appear as shown in Figure 3.60(b). The
peak and valley points are stable operating points at

MOTOROLA THYRISTOR DEVICE DATA
1-3-30

r---......--cG

either end of a negative resistance region. The peak point
voltage (Vp) is essentially the same as the external gate
reference, the only difference being the gate diode drop.
Since the reference is circuit and not device dependent,
it may be varied, and in this way, Vp is programmable.
This feature is the most significant difference between
the UJT and the PUT.
In characterizing the PUT, it is convenient to speak of
the Thevenin equivalent circuit for the external gate voltage (VS) and the equivalent gate resistance (RG). The
parameters are defined in terms of the divider resistors
(Rl and R2) and supply voltage as follows:

NEGATIVE RESISTANCE REGION

VF--+--+-+----~----~(------~

VV-f--~+-------~+_---

IGAO

+ R2)
Rl R2/(Rl + R2)

Vs = R1 V1/(Rl
RG

=

Most device parameters are sensitive to changes in Vs
and RG. For example, decreasing RG will cause peak and
valley currents to increase. This is easy to see since RG
actually shunts the device and will cause its sensitivity
to decrease.

Ip

•

IV

Figure 3.60(a). Static Characteristics

CHARACTERISTICS OF THE PUT

R2

Table 3.111 is a list oftypical characteristics of Motorola's
MPU131 series of programmable unijunction transistors.
The test circuits and test conditions shown are essentially
the same as for the data sheet characteristics. The data
presented here defines the static curve shown in Figure
3.60(b) for a 10 V gate reference (VS) with various gate
resistances (RG)' It also indicates the leakage currents of
these devices and describes the output pulse. Values
given are for 25°C unless otherwise noted.

+

-=OUTPUT

0--+------+

Vl

Rl

Figure 3.60(b). Typical Oscillator Circuit

Table 3.111. Typical PUT Characteristics
Symbol

Test Circuit Figure

Test Conditions

MPU131

MPU132

MPU133

Unit

Ip

3.64

RG = 1 m!l
RG = 10 k!l

1.25
4

0.19
1.20

0.08
0.70

/LA

IV

3.64

RG = 1 M!l
RG = 10 kH

18
270

18
270

18
270

~
~

nA

~

(See Figure 3.65)

VAG
IGAO

Vs = 40 V

IGKS

Vs = 40 V

See Figure 3.66
5

5

5

0.8

0.8

0.8

V

3.67

16

16

16

V

3.68

40

40

40

ns

VF

Curve Tracer Used

Vo
tr

IF

=

50 mA

PEAK POINT CURRENT, lip)
The peak point is indicated graphically by the static
curve. Reverse anode current flows with anode voltages
less than the gate voltage (VS) because of leakage from
the bias network to the charging network. With currents
less than Ip, the device is in a blocking state. With currents
above Ip, the device goes through a negative resistance
region to its on state.

The charging current. or the current through a timing
resistor, must be greater than Ip at Vp to insure that a
device will switch from a blocking to an on state in an
oscillator circuit. For this reason, maximum values of Ip
are given on the data sheet. These values are dependent
on Vs temperature, and RG. Typical curves on the data
sheet indicate this dependence and must be consulted
for most appl ications.

MOTOROLA THYRISTOR DEVICE DATA
1-3-31

and is measured by increasing the current while the device is oscillating and recording the value at which oscillations stop. With the PUT, there was no measurable
difference between these parameters. This is not necessarily true with a unijunction transistor.
The valley current does vary with circuit parameters
and temperature as was true of Ip. Typical data sheet
curves identify this dependence and are frequently used
to approximate actual variations of IV.

The test circuit in Figure 3.61 is a sawtooth oscillator
which uses a 0.01 ,.,.F timing capacitor, a 20 V supply, an
adjustable charging current, and equal biasing resistors
(R). The two biasing resistors were chosen to give an
equivalent RG of 1 MO and 10 kO. The peak point current
was measured with the device off just prior to oscillation
as detected by the absence of an output voltage pulse.
The 2N5270 held effect transistor circuit is used as a current source. A variable gate voltage supply was used to
control this current.

PEAK POINT VOLTAGE, (Vp)
The unique feature of the PUT is that the peak point
voltage can be determined externally. This programmable feature gives this device the ability to function in
voltage controlled oscillators or similar applications. The
triggering or peak point voltage is approximated by

VALLEY POINT CURRENT, (IV)
The valley point is indicated graphically in Figure 3.60.
With currents slightly less than lV, the device is in an
unstable negative resistance state. A voltage minimum
occurs at IV and with higher currents, the device is in a
stable on state.
When the device is used as an oscillator, the charging
current or the current through a timing resistor must be
less than IV at the valley point voltage (VV). For this reason, minimum values for IV are given on the data sheet
for RG = 10 kO. With RG = 1 MO, a reasonable "low"
is 2 ,.,.A for all devices.
When the device is used as an SCR in the latching
mode, the anode current must be greater than IV. Maximum values for IV are given with RG = 1 MO. All devices
have a reasonable "high" of 400 tJA IV with RG = 10 kO.

Vp = VT

Ip, IV

NOTES: 11 VARIOUS SENSE RE SISTORS IRS 1ARE USED TO
KEEP THE SENSE VO LTAGE NEAR 1 Vdc.
21 THE GATE SUPPLY IVGIIS ADJUSTED FROM
ABOUT - 0.5 V to + 20 V.

RS

~'I

_ '11'--+
VG

+

20 V

+ VS,

where Vs is the unloaded divider voltage and VT is the
offset voltage. The actual offset voltage will always be
higher than the anode-gate voltage VAG, because Ip
flows out of the gate just prior to triggering. This makes
VT = VAG + Ip RG. A change in RG will affect both VAG
and Ip RG but in opposite ways. First, as RG increases.
Ip decreases and causes VAG to decrease. Second, since
Ip does not decrease as fast as RG increases, the Ip RG
product will increase and the actual VT will increase.

G

S

l-2~5270

A

-----

0.01,.,.F

\,

1

PUT
UNDER
TEST

A

>--0

Vp

OUTPUT PULSE

20
R = 2 RG

Vs = 10 V
Figure 3.61. Test Circuit for Ip, Vp and IV

LATCHING AND HOLDING CURRENT, (lL, IH)
Using the test circuit in Figure 3.61, an attempt was
made to differentiate between latching current (Ill, holding current (lH), and valley current. With the device
latched on, reducing the current causes a voltage minimum which is the valley point. The device does remain
on at lower currents until holding current (lH) is reached.
The holding current is measured as detected by the
absence of an output voltage pulse just before oscillation
occurs. The latching current is generally higher than IH

These second order effects are difficult to predict and
measure. Allowing VT to be 0.5 V as a first order approximation gives sufficiently accurate results for most
applications.
The peak point voltage was tested using the circuit in
Figure 3.61 and a scope with 10 MO input impedance
across the PUT. A Tektronix, Type W plug-in was used
to determine this parameter.

MOTOROLA THYRISTOR DEVICE DATA
1-3-32

FORWARD ANODE-GATE VOLTAGE, (VAG)
The forward anode-to-gate voltage drop affects the
peak point voltage as was previously discussed. The drop
is essentially the same as a small signal silicon diode and
is plotted in Figure 3.62. The voltage decreases as current
decreases, and the change in voltage with temperature
is greater at low currents. At 10 nA the temperature coefficient is about - 2.4 v/oe and it drops to about -1.6 mVI
°e at 10 mA. This information is useful in applications
where it is desirable to temperature compensate the
effect of this diode.

70

/

60

/

/

,I

1/
0

/'

/

20
1
10
iGAO, GATE TO ANODE LEAKAGE CURRENT InA)

0.9

Figure 3.63. Typical Leakage Current of the MPU131,
132 and 133 Reverse Voltage Equals 40 V

0.7

:....-

en

'::;

a

~

'"

«
:>

0.5
0.3

:.-

0.1

--

25°C
"...

PEAK OUTPUT VOLTAGE, (VO)
The peak output voltage is not only a function of Vp,
VF and dynamic impedance, but is also affected by
switching speed. This is particularly true when small
capacitors (less than 0.01 fLF) are used for timing since
they lose part of their charge during the turn on interval.
The use of a relatively large capacitor (0.2 fLF) in the test
circuit of Figure 3.64 tends to minimize this last effect.
The output voltage is measured by placing a scope across
the 20 ohm resistor which is in series with the cathode
lead.

i-'"'
i-'"' 75°C

"...

o
0.01

0.1

10
100
lK
10K
iAGI/iAI
Figure 3.62. Voltage Drop of MPU131 Series

GATE-CATHODE LEAKAGE CURRENT, (lGKS)
The gate-to-cathode leakage current is the current that
flows from the gate to the cathode with the anode shorted
to the cathode. It is actually the sum of the open circuit
gate-anode and gate-cathode leakage currents. The
shorted leakage represents current that is shunted away
from the voltage divider.

16 k

510 k

A
__ [;: 1 /iF

+
20 V-..c:-

-

0.2 /-,F ... .;;

,/

FORWARD VOLTAGE, (VF)
The forward voltage (VF) is the voltage drop between
the anode and cathode when the device is biased on. It
is the sum of an offset voltage and the drop across some
internal dynamic impedance which both tend to reduce
the output pulse. The typical data sheet curve shows this
impedance to be less than 1 ohm for up to 2 A of forward
current. This is essentially an order of magnitude better
than the UJT which is closer to 20 ohms.

o

V

27k

Figure 3.64. PUT Test Circuit for Peak Output Voltage
(Vo )

RISE TIME, (t r )
Rise time is a useful parameter in pulse circuits that
use capacitive coupling. It can be used to predict the
amount of current that will flow between these circuits.
Rise time is specified using a sampling scope and measuring between 0.6 V and 6 V on the leading edge of the
output pulse. Even fast scopes (100 MHz bandpass)
degrade this measurement and readings must be corrected by calculations. It is preferable to use a 1000 pF
capacitor and a sampling scope as shown in Figure 3.65
to read the 10% to 90% points directly. The resulting typical rise times of 40 ns are significantly better than those
of the UJT which are about 100 ns.

MOTOROLA THYRISTOR DEVICE DATA
1-3-33

Outp ut

K

20

GATE-ANODE LEAKAGE CURRENT, (lGAO)
The gate-to-anode leakage current is the current that
flows from the gate to the anode with the cathode open.
It is important in long duration timers since it adds to the
charging current flowing into the timing capacitor. The
typical leakage currents measured at 40 V are shown in
Figure 3.63. Leakage at 25°C is approximately 1 nA and
the current appears to double for about every 10°C rise
in temperature.

G'

•

To Tekt ronlcs
.
510 k

Vl
20V

+

A

RG

O.OOl /LF

,/

-.=-

•

=

I

10 k

G

~

;;i'
1000 pF

not been characterized, it is obvious that temperature
compensation is more practical with relatively low frequency oscillators.

Type 567
or Equivalent

16 k

A

100

K

+
G

-=-12V
20

27k

1k

100
O.D1/LF

-

Q-----+-oOutput

Figure 3.65. tr Test Circuit for PUTs

2k

MINIMUM AND MAXIMUM FREQUENCY
In actual tests with devices whose parameters are
known, it is possible to establish minimum and maximum
values of timing resistors that will guarantee oscillation.
The circuit under discussion is a conventional RC relaxation type oscillator.
To obtain maximum frequency, it is desirable to use
low values of capacitance (1000 pF) and to select devices
and bias conditions to obtain high IV. It is possible to use
stray capacitance but the results are generally unpredictable. The minimum value of timing resistance is obtained using the following rule of thumb:

Figure 3.66. Uncompensated Oscillator
Various methods of compensation are shown in Figure
3.67. In the low cost diode-resistor combination of 3.67(a),
the diode current is kept small to cause its temperature
coefficient to increase. In 3.67(b), the bias current through
the two diodes must be large enough so that their total
coefficient compensates for VAG. The transistor
approach in 3.67(c) can be the most accurate since its
temperature coefficient can be varied independently of
bias current.

R(min) = 2(V1 - VV)/IV
where the valley voltage (VV) is often negligible.
To obtain minimum frequency, it is desirable to use
high values of capacitance (10 p.F) and to select devices
and bias conditions to obtain low Ip. It is important that
the capacitor leakage be quite low. Glass and mylar dielectrics are often used for these applications. The maximum timing resistor is as follows:

100 k < R < 1 M

R(max) = (VI - Vp)/21p
In a circuit with a fixed value of timing capacitance, our
most sensitive PUT, the MPU133, offers the largest dynamic frequency range. Allowing for capacitance and
bias changes, the approximate frequency range of a PUT
is from 0.003 Hz to 2.5 kHz.
TEMPERATURE COMPENSATION
The PUT with its external bias network exhibits a relatively small frequency change with temperature. The
uncompensated RC oscillator shown in Figure 3.66 was
tested at various frequencies by changing the timing
resistor RT. At discrete frequencies of 100, 200, 1000 and
2000 Hz, the ambient temperature was increased from
25° to 60°C. At these low frequencies, the negative temperature coefficient of VAG predominated and caused a
consistent 2% increase in frequency. At 10 kHz, the frequency remained within 1% over the same temperature
range. The storage time phenomenon which increases
the length of the output pulse as temperature increases
is responsible for this result. Since this parameter has

la) Diode-Resistor

Ib) Dual-Diode

Figure 3.67. Temperature Compensation Techniques

MOTOROLA THYRISTOR DEVICE DATA
1-3-34

Ic) Transistor

TRIGGERS: SILICON BILATERAL SWITCH
THE SILICON BILATERAL SWITCH
The silicon bilateral switch (SBS) is an advanced semiconductor with negative resistance switching characteristics similar to the 3-layer diode, 4-layer diode and unijunction transistor (UJT). The latter devices have seen
wide application, especially in triggering circuits where
they can supply the fast rising, high-current gate pulse
necessary for the proper operation of power thyristors.
In such applications, the SBS can improve circuit performance and reduce cost at the same time.
These devices are not just an improved version of a
PNPN diode. They are actually fabricated as simple integrated circuits consisting of transistors, diodes and resistors, connected as two anti-parallel, regenerative
switches. Since the device is fabricated as an IC, the components are well matched resulting in an asymmetry, or
difference of positive Vs and negative VS, of less than
0.5 volts.
A third lead, designated the Gate, has been brought
out for increased circuit flexibility. Since these devices
are a regenerative switch, they may also be designed into
many low power latching circuits.
The equivalent circuit diagram of an SBS and its symbol are shown in Figure 3.68. The device is actually a
simple IC and consists of two halves of a PNP and an
NPN transistor, a 6.8 volt zener diode and a 15 k!l resistor,
RB. Unlike existing 4-layer diodes which use a stacked
structure, the SBS is constructed using annular techniques. The result is a device with better stability and
control of its electrical parameters.

Vs is applied; VF, the forward voltage, is the voltage drop
across the device when it is in the conducting state and
passing a specified current; IH' the holding current, is the
current necessary to sustain conduction; IB is the leakage
current through the device with five volts bias.
Operation of the SBS can be best understood by referring to Figures 3.69 and 3.70. Consider an adjustable
source of voltage with a current limiting resistor in series
supplying a voltage to a device anode 1 that is five volts
positive with respect to anode 2. Since this voltage is less
than the sum of VBE of the PNP transistor and Vz of the
6.8 volt zener diode, only a very small leakage current
will flow and the device in the off or blocking state. As
the supply voltage is increased, a point will be reached
(near VS) where a small increase in voltage results in a
substantial increase in current flow. The PNP transistor
purposely has high current gain and most of this
increased current flows out of its collector and produces
a voltage drop across RB.
The two transistors are connected in a positive feedback loop similar to the equivalent circuit for an SCR

IlmAI

-

3

VF

V IVOlTSI

10
8

I

18

10

Vs

ANODE 1

A1

6.8 V

Figure 3.69. SBS Anode 1-Anode 2 V-I Characteristics
GATE
Go---I-.,4.,/...

VS---------

6.8 V

1--10S~

A2
(a)

Figure 3.68(a).
SBS Equivalent Circuit
and Symbol

TIME IUNSeAlEDI
TURN·ON·PUlSES

ANODE 2

VS-~~==~--------~

Figure 3.68(b)

Electrical characteristics are shown in Figure 3.70 and
the parameters are defined as follows: VS, the switching
voltage, is the maximum forward voltage the device can
su~tain without switching to the conducting state; IS, the
sWltchmg current, is the current through the device when

I- t>200/J-S-I
(b)

TIME IUNSeAlEDI

Figure 3.70. Waveforms for dv/dt Test

MOTOROLA THYRISTOR DEVICE DATA
1-3-35

•

where the collector current of one is the base current for
the other. When the voltage across RB is sufficient to turn
the NPN transistor on and the loop gain exceeds unity,
both transistors are driven into saturation, the voltage
across the device abruptly drops and the current through
it is limited mainly by the external circuitry. The device
has now switched to the on or conducting state.
The 6.8 volt zener diode has a positive temperature
voltage coefficient which is opposite to that of VBE of the
PNP transistor. The net result is good temperature stability of VS, typically + 0.02%!"C.
VF, the forward voltage across the device, remains relatively low even if the current through it is greatly increased, rising approximately 3 volts/ampere. The device
will remain on until the current through it is reduced
below the holding current value. One method of insuring
turn-off is to apply a reverse voltage less than VR, the
maximum reverse voltage. After a few microseconds
(turn-off time) have elapsed, the transistors will have recovered from saturation and the device will again block
a forward voltage up to VS.
A third lead, the gate, can be used to modify the characteristics of the SBS. As an example, connecting a 9.4
volt zener diode from gate to cathode would lower Vs to
approximately 4.6 volts. Connecting a 20 kO resistor from
gate to anode and a similar resistor from gate to cathode
will lower Vs to approximately 4 volts at the expense of
increased current around the device prior to switching.
Also, if a voltage less than Vs is applied to an SBS it can
be "gated" on by drawing a small current out of the gate
lead.

Like other regenerative switches, the SBS has a tendency to switch on in the presence of rapidly rising anode
voltage. The dv/dt rating of the SBS is difficult to define
and the method of measurement may produce erroneous
results. A test ramp of voltage with adjustable dv/dt as
shown in Figure 3.70(a} may be applied to the device if
not repeated more frequently than every 10 seconds. The
device may switch to the on state when the dv/dt is in
the range of 1 to 10 volts/microsecond. The repetitive
waveform of (b) may be applied much more frequently
(convenient for an oscilloscope display) providing only
that the time interval between turn-off and the next ramp
is longer than the turn-off time of the device. The turnon pulse in (c) is necessary to discharge internal capacitance which can accumulate a charge and give false indication of very high dv/dt capability.
Sweeping an SBS in either direction will yield similar
results. However, when an SBS has been conducting in
one direction and the anode voltage is rapidly reversed,
the dv/dt must be limited to approximately 0.1 volt/microsecond. This is necessary because if the transistors in
the conducting half of the device have not recovered from
saturation, they will provide a path for a current to turn
the opposite side on.

MOTOROLA THYRISTOR DEVICE DATA
1-3-36

CHAPTER 4
NEW THYRISTOR TECHNOLOGIES

THE SIDAC, A NEW HIGH VOLTAGE
BILATERAL TRIGGER

SIDAC's are available in the large MK1V series and
economical, easy to insert, small MKP9V series axial lead
packages. Breakdown voltages ranging from 104 to 280 V
are available. The MK1V devices feature bigger chips and
provide much greater surge capability along with somewhat higher RMS current ratings.
The high-voltage and current ratings of SIDACs make
them ideal for high energy applications where other trigger devices are unable to function alone without the aid
of additional power boosting components.
The basic SIDAC circuit and waveforms, operating off
of ac are shown in Figure 4.2. Note that once the input
voltage exceeds V(BO), the device will switch on to the
forward on-voltage VTM of typically 1.1 V and can conduct as much as the specified repetitive peak on-state
current ITRM of 20 A (10 !Ls pulse, 1 kHz repetition
frequency).

The SIDAC is a high voltage bilateral trigger device that
extends the trigger capabilities to significantly higher
voltages and currents than have been previously obtainable, thus permitting new, cost-effective applications.
Being a bilateral device, it will switch from a blocking
state to a conducting state when the applied voltage of
either polarity exceeds the breakover voltage. As in other
trigger devices, (SBS, Four Layer Diode). the SIDAC
switches through a negative resistance region to the low
voltage on-state (Figure 4.1) and will remain on until the
main terminal current is interrupted or drops below the
holding current.

SLOPE = RS

y:-.................
\
...

-

_IS

=:::::==;:;;=--1~"'""'====f::::=1~ I(BOI
V(BOI

R _ IV(BOI - VSI
S - (IS - I(BOII

Figure 4.1 (a). Idealized SIOAC V-I Characteristics

Figure 4.1(b). Actual MKP9V130 V-I Characteristic.
Horizontal: 50 VlDivision. Vertical: 20 rnA/Division.
(0,0) at Center. RL = 14 k Ohm.

MOTOROLA THYRISTOR DEVICE DATA
1-4-1

•

--I

•

RL < IRSI

vISO)

I--

R - IVISOI - VSI
S - liS - IISOI)

RS

=

SIDAC SWITCHING
RESISTANCE

Figure 4.2. Basic SIOAC Circuit and Waveforms

If the load resistance is less than the SIDAC switching
resistance, the voltage across the device will drop quickly
as shown in Figure 4.2. A stable operating point (VT, IT)
will result if the load resistor and line voltage provide a
current greater than the latching value. The SIDAC
remains in an "on" condition until the generator voltage
causes the current through the device to drop below the
holding value (IH)' At that time, the SIDAC switches to
the point (Voff, loff) and once again only a small leakage
current flows through the device.
Figure 4.4 illustrates the result of operating a SIDAC
with a resistive load greater than the magnitude of its
switching resistance. The behavior is similar to that
described in Figures 4.2 and 4.3 except that the turn-on
and turn-off of the SIDAC is neither fast nor complete.
Stable operating points on the SIDAC characteristics

Operation from an AC line with a resistive load can be
analyzed by superimposing a line with slope = -1/RL
on the device characteristic. When the power source is
AC, the load line can be visualized as making parallel
translations in step with the instantaneous line voltage
and frequency. This is illustrated in Figure 4.3 where v1
through v5 are the instantaneous open circuit voltages
ofthe AC generator and i1 through i5 are the corresponding short circuit currents that would result if the SIDAC
was not in the circuit. When the SIDAC is inserted in the
circuit, the current that flows is determined by the intersection of the load line with the SIDAC characteristic.
Initially the SIDAC blocks, and only a small leakage current flows at times 1 through 4. The SIDAC does not turnon until the load line supplies the breakover current
(I(BO)) at the breakover voltage (V(BO)).

v1, ,.. , V5 = INSTANTANEOUS OPEN

CIRCUIT VOLTAGES
AT TIME 1, .. " 5

;1, .. ,' ;5 = INSTANTANEOUS
SHORT CIRCUIT
CURRENTS AT
TIME 1, .. ,,5
IVSO,ISOI

,
V
1=-

RL

Figure 4.3. Load Line for Figure 4.2. (1/2 Cycle Shown.)

MOTOROLA THYRISTOR DEVICE DATA
1-4-2

RL> IRSI
RS

= SIDAC SWITCHING RESISTANCE

Figure 4.4. High Resistance Load Line with Incomplete Switching

between (V(BO), '(BO)) and (VS, IS) result as the generator
voltage increases from v2 to v4. The voltage across the
SIDAC falls only partly as the loadline sweeps through
this region. Complete turn-on of the SIDAC to (VT, 'T)
does not occur until the load line passes through the point
(VS, IS)· The load line illustrated in Figure 4.4 also results
in incomplete turn-off. When the current drops below IH'
the operating point switches to (Voff' 'off) as shown on
the device characteristic.
The switching current and voltage can be 2 to 3 orders
of magnitude greater than the breakover current and onstate voltage. These parameters are not as tightly specified as VBO and 'BO. Consequently operation of the
SIDAC in the state between fully on and fully off is undesirable because of increased power dissipation, poor efficiency, slow switching, and tolerances in timing.
Figure 4.5 illustrates a technique which allows the use
of the SIDAC with high impedance loads. A resistor can
be placed around the load to supply the current required
to latch the SIDAC. Highly inductive loads slow the current rise and the turn-on of the SIDAC because of their
LlR time constant. The use of shunt resistor around the
load will improve performance when the SIDAC is used
with inductive loads such as small transformers and
motors.
The SIDAC can be used in oscillator applications. If the
load line intersects the device characteristic at a point
where the total resistance (RL + RS) is negative, an
unstable operating condition with oscillation will result.
The resistive load component determines steady-state
behavior. The reactive components determine transient
behavior. Figure 4.10 shows a SIDAC relaxation oscillator
application. The wide span between IBO and IH makes
the SIDAC easy to use. Long oscillation periods can be
achieved with economical capacitor sizes because of the
low device I(BO).
Z1 is typically a low impedance. Consequently the
SIDAC's switching resistance is not important in this

•

application. The SIDAC will switch from a blocking to full
on-state in less than a fraction of a microsecond.
The timing resistor must supply sufficient current to
fire the SIDAC but not enough current to hold the SIDAC
in an on-state. These conditions are guaranteed when the
timing resistor is selected to be between Rmax and Rmin.
For a given time delay, capacitor size and cost is minimized by selecting the largest allowable timing resistor.
Rmax should be determined at the lowest temperature
of operation because '(BO) increases then. The load line
corresponding to Rmax passes through the point (V(BO),
'(BO)) allowing the timing resistor to supply the needed
breakover current at the breakover voltage. The load line
for a typical circuit design should enclose this point to
prevent sticking in the off state.
Requirements for higher oscillation frequencies and
greater stored energy in the capacitor result in lower values for the timing resistor. Rmin should be determined
at the highest operating temperature because IH is lower
then. The load line determined by Rand Vin should pass
below 'H on the device characteristic or the SIDAC will
stick in the on-state after firing once. 'H is typically more
than 2 orders of magnitude greater than 'BO. This makes
the SIDAC well suited for operation over a wide temperature span.
SIDAC turn-off can be aided when the load is an underdamped oscillatory CRL circuit. In such cases, the SIDAC
current is the sum ofthe currents from the timing resistor
and the ringing decay from the load. SIDAC turn-off
behavior is similar to that of a TRIAC where turn-off will
not occur if the rate of current zero crossing is high. This
is a result of the stored charge within the volume of the
device. Consequently, a SIDAC cannot be force commuted like an SCR. The SIDAC will pass a ring wave of
sufficient amplitude and frequency. Turn-off requires the
device current to approach the holding current gradually.
This is a complex function of junction temperature, holding current magnitude, and the current wave parameters.

"i':
.... ""~.JI:y;;ndJiw~~~~:K#"t,-;;!\?/'9·.), ·.."yyt.'jJ~..,. ..,Ti;~ ;

MOTOROLA THYRISTOR DEVICE DATA
1-4-3

RSL

RSL < IRSI
TYPICAL:
RSL = 2.7 kOHM
10 WATT
RS = 3kOHM
RSL

•

TURN·ON SPEED
UP RESISTOR
RS = SIDAC SWITCHING
RESISTANCE
=

Figure 4.5. Inductive Load Phase Control

How can the SIDAC be used? One application is to
replace the combination of a small-signal trigger and
TRIAC with the SIDAC, as shown in Figure 4.6. In this
example, the trigger - an SBS (Silicon Bidirectional
Switch) that conducts at about 8 V - will fire the TRIAC
by dumping the charge from the capacitor into the gate
of the TRIAC. This circuit is amenable to phase controlling
the TRIAC, if so required, as the RC time constant can be
readily varied.
The simple SIDAC circuit can also supply switchable
load current. However, the conduction angle is not readily
controllable, being a function of the peak applied voltage
and the breakover voltage of the SIDAC. As an example,
for peak line voltage of about 170 V, at V(BO) of 115 V
and a holding current of 100 mA. the conduction angle
would be about 130°. With higher peak input voltages (or
lower breakdown voltages) the conduction angle would
correspondingly increase. For non-critical conduction
angle, 1 A rms switching applications, the SIDAC is a very
cost-effective device.
Figure 4.7 shows an example of a SIDAC used to phase
control an incandescent lamp. This is done in order to
lower the RMS voltage to the filament and prolong the
life ofthe bulb. This is particularly useful when lamps are
used in hard to reach locations such as outdoor lighting
in signs where replacement costs are high. Bulb life span
can be extended by 1.5 to 5 times depending on the type
of lamp, the amount of power reduction to the filament,
and the number of times the lamp is switched on from
a cold filament condition.

The operating cost of the lamp is also reduced because
of the lower power to the lamp; however, a higher wattage bulb is required for the same lumen output. The
maximum possible energy reduction is 50% if the lamp
wattage is not increased. The minimum conduction angle
is 90° because the SIDAC must switch on before the peak
ofthe line voltage. Line regulation and breakover voltage
tolerances will require that a conduction angle longer
than 90° be used, in order to prevent lamp turn-off under
low line voltage conditions. Consequently, practical conduction angles will run between 110° and 130° with corresponding power reductions of 10% to 30%.
In Figure 4.2 and Figure 4.7, the SIDAC switching angles
are given by:
00N = SIN -1 (V(BO)Npk)
where Vpk = Maximum Instantaneous Line Voltage

oOFF

=

180 - SIN -1 ((JH"RLl + VT)
Vpk

where 00N, 00FF = Switching Angles in degrees
VT = 1 V = Main Terminal Voltage at IT = IH
Generally the load current is much greater than the
SIDAC holding current. The conduction angle then
becomes 180° minus O(on).
Rectifiers have also been used in this application to
supply half wave power to the lamp. SIDAC's prevent the
flicker associated with half-wave operation of the lamp.
Also, full wave control prevents the introduction of a DC
component into the power line and improves the color
temperature of the light because the filament has less
time to cool during the off time.
The fast turn-on time of the SIDAC will result in the
generation of RFI which may be noticeable on AM radios
operated in the vicinity ofthe lamp. This can be prevented
by the use of an RFI filter. A possible filter design is shown
in Figure 4.5. This filter causes a ring wave of current
through the SIDAC at turn-on time. The filter inductor
must be selected for resonance at a frequency above the
upper frequency limit of human hearing and as low below
the start of the AM broadcast band as possible for maximum harmonic attenuation. In addition, it is important
that the filter inductor be non-saturating to prevent dl/dT
damage to the SIDAC. For additional information on filter
design see page 1-5-30 and Figure 5.34.

R
TRIAC
SIDAC

c

Figure 4.6. Comparison of a TRIAC and SIOAC Circuits

MOTOROLA THYRISTOR DEVICE DATA
1-4-4

t

rv
220VAC

~

100WATI

240 V

1

1

100 /.tHY PREM SPE3:--;
RDC = 0.04!l

I
I
I
I

-

I

OPTIONAL
RFI FILTER

•

I

L ____J

Figure 4.7. long-life Circuit for Incandescent lamp

The sizing ofthe SIDAC must take into accountthe RMS
current of the lamp, thermal properties of the SIOAC, and
the cold start surge current of the lamp which is often 10
to 20 times the steady state load current. When lamps
burn out, atthe end oftheir operating life, very high surge
currents which could damage the SIOAC are possible
because of arcing within the bulb. The large MK1V device
is recommended ifthe SIOAC is not to be replaced along
with the bulb.
Since the MK1V series of SIOACs have relatively tight
V(BO) tolerances (104 V to 115 V for the -115 device),
other possible applications are over-voltage protection
(OVP) and detection circuits. An example of this, as illustrated in Figure 4.8, is the SIOAC as a transient protector
in the transformer-secondary of the medium voltage
power supply, replacing the two more expensive backto-back zeners or an MOV. The device can also be used
across the output of the regulator «100 V) as a simple
OVP, but for this application, the regulator must have
current foldback or a circuit breaker (or fuse) to minimize
the dissipation of the SIOAC.

Another example of OVP is the telephony applications
as illustrated in Figure 4.9. To protectthe Subscriber Loop
Interface Circuit (SLlC) and its associated electronics from
voltage surges, two SIOACs and two rectifiers are used
for secondary protection (primary protection to 1,000 V
is provided by the gas discharge tube across the lines).
As an example, if a high positive voltage transient
appeared on the lines, rectifier 01 (with a P.I.V. of 1,000
V) would block it and SIOAC 04 would conduct the surge
to ground. Conversely, rectifier 02 and SIDAC 03 would
protect the SLiC for negative transients. The SIOACs will
not conduct when normal signals are present.
Being a negative resistance device, the SIOAC also
can be used in a simple relaxation oscillator where the
frequency is determined primarily by the RC time constant (Figure 4.10). Once the capacitor voltage reaches
the SIOAC breakover voltage, the device will fire, dumping the charged capacitor. By placing the load in the
discharge path, power control can be obtained; a typical load could be a transformer-coupled xeon flasher,
as shown in Figure 4.12.

SIDAC AS A TRANSIENT
PROTECTOR

Vo .. l00V

z

Figure 4.8. Typical Application of SIDACs as a Transient Protector and OVP in a Regulated Power Supply
~'i:":) ·><,;t··'.&A~~·;(."~'*'\'> __ "''''''··'"''··'.,&,,,"-7'jf'''·..iji,,,'''M,'0~'~~.~I'''''''

~.r,:'0'li"}':"':"¥';"C}.""''''''·4~;>,,'.t.~~~:''',,·''''~''''I'\i'''e VOPERATING

V

•

VAC

1

R

Figure 4.18. Fluorescent Starter Using SIDAC and Autotransformer Ballast

Table 4.1. Possible Sources for Thermistor Devices
Fenwal Electronics, 63 Fountain Street
Framingham MA 01701
Keystone Carbon Company, Thermistor Division
St. Marys, PA 15857
Thermometrics, 808 U.S. Highway 1
Edison, N.J. 08817
Therm-O-Disc, Inc. Micro Devices Product Group
1320 South Main Street, Mansfield, OH 44907
Midwest Components Inc., P.O. Box 787
1981 Port City Boulevard, Muskegon, MI 49443
Nichicon (America) Corp., Dept. G
927 E. State Pkwy, Schaumburg, IL 60195
must be modified to allow heating of the fluorescent
tube cathodes if starting is to simulate the conditions
existing when a glow tube is used.
Thermistors are useful in delaying the turn-on or insuring the turn-off of SIDAC devices. Table 4.1 shows possible sources of thermistor devices.
Other high voltage nominal current trigger applications
are:
• Gas or oil igniters
• Electric fences
• HV electrostatic air filters
• Capacitor Discharge ignitions
Note that all these applications use similar circuits
where a charged capacitor is dumped to generate a high
transformer secondary voltage (Figure 4.11).
In many cases, the SIDAC current wave can be approximated by an exponential or quasi-exponential current

wave (such as that resulting from a critically damped or
slightly underdamped CRL discharge circuit). The question then becomes; how much "real world" surge current
can the SIDAC sustain? The data sheet defines an ITSM
of 20 A, but this is for a 60 Hz, one cycle, peak sine wave
whereas the capacitor discharge current waveform has
a fast-rise time with an exponential fall time.
To generate the surge current curve of peak current
versus exponential discharge pulse width, the test circuit
of Figure 4.19 was implemented. It simulates the topology of many applications whereby a charged capacitor
is dumped by means of a turned-on SIDAC to produce a
current pulse. Timing for this circuit is derived from the
nonsymmetrical CMOS astable multivibrator (M.V.) gates
G1 and G2. With the component values shown, an
approximate 20 second positive-going output pulse is fed
to the base of the NPN small-signal high voltage transistor Q1, turning it on. The following high voltage PNP
transistor is consequently turned on, allowing capacitor
C1 to be charged through limiting resistor R1 in about 16
seconds. The astable M.V. then changes state for about
1.5 seconds with the positive going pulse from Gate 1
fed through integrator R2-C2 to Gate 3 and then Gate 4.
The net result of about a 100 ILs time delay from G4 is
to ensure non-coincident timing conditions. This positive
going output is then differentiated by C3-R3 to produce
an approximate 1 ms, leading edge, positive going pulse
which turns on NPN transistor Q3 and the following PNP
transistor Q4. Thus, an approximate 15 rnA, 1 ms pulse
is generated for turning on SeR Q5 about 100 ILs after
capacitor charging transistor Q2 is turned off. The SCR
now fires, discharging C1 through the current limiting
resistor R4 and the SIDAC Device Under Test (D.U.T.).
The peak current and its duration is set by the voltage
Vc across capacitor C1 and current limiting resistor R4.
The circuit has about a 240 V capability limited by C1, Q1
and Q2 (250 V, 300 V and 300 V respectively).

MOTOROLA THYRISTOR DEVICE DATA
1-4-10

+15V

+15V
R2
100 k

VCC"; 240 V

MC14011

10 k

+15V

+15V
LED
R4
22 M

22k

22 M

-=-

Cl
8O/LF
250 V

-=

I

SIDAC
OUT

C3
0.1 /LF

3.30
2W

0.47 /LF

lN914

Figure 4.19. SIOAC Surge Tester

The SCR is required to fire the' SIDAC, rather than the
breakover voltage, so that the energy to the D.U.T. can
be predictably controlled.
By varying VC, C1 and R4, the surge current curve of
Figure 15 was derived. Extensive life testing and adequate derating ensure that the SIDAC, when properly
used, will reliably operate in the various applications.
l00r---------------------------------~

en

":;
:$

30

!Z
w

a::
a::
'-'
w
a::

:::J

'"en
:::J

~

10

lkl
0.3

30

10

100

300

lvi, PULSE WIDTH Ims)

GTO DEVICES
Gate turn-off devices (GTOs) are thyristors which can
be turned off as well as turned on by a gate signal. The
symbol for a GTO is shown in Figure 4.21. Such devices
were described as early as the 1960's, but they have only
recently begun to see application in switching circuits.
Modern GTO devices are rugged efficient high voltage
switches combining the benefits of regenerative operation with the turn-off ease of Bipolar Junction Transistors
(BJTs). GTOs provide a blend of many of the most desirable characteristics of the SCR and the BJT. Since they
can be turned off with a low power gate signal, they are
excellent for pulse width modulation techniques in circuits that need a high-performance economical switch
with the ruggedness of an SCR. The GTO should be considered wherever there is a need for a switch which can
handle high pulsed power and moderate average power,
with high switching SOA and excellent high-voltage
switching speed.

AN~ODE

'GA:l

Figure 4.20. Exponential Surge Current Capability of the
MK1V SIOAC. Pulse Width versus Peak Current

Figure 4.21. Symbol for GTO

MOTOROLA THYRISTOR DEVICE DATA
1-4-11

•

Like the BJT. the GTO can be turned off by a low power
drive signal. This eliminates the need for bulky. expensive, and inefficient commutation circuits that are needed
in SCR forced commutation applications. The GTOs commutating dv/dt(c) and switching speed are an order of
magnitude better than a conventional SCR. Unlike other
thyristors, GTOs are nearly immune to turn-on by static
dv/dt. This allows the use of a small snubber network
and permits higher operating frequencies than with
SCRs.
When a snubber is used, the GTO exhibits a dv/dt(c)
sensitive turn-off switching SOA characteristic which is
nearly independent of voltage. Even without a snubber
it is possible to switch very high currents at moderate
voltages at high temperatures. However in order to keep
the dv/dt(c) stress within predictable limits, a small snubber is recommended.

Like the SCR, the GTO has momentary turn-on gate
drive, latching, good l!urge handling ability, and low
forward drop conduction losses at relatively high
anode currents and die current densities (Figure
4.22). Like an SCR, conduction takes place by both
holes and electrons injected into the respective P and
N emitters of the device. The resulting high concentration of carriers and the regenerative action which
holds the device in saturation allows it to operate at
high current densities and that, in turn, allows a
smaller chip size for a given switching capability.

•

200

400d-25°C ..

100A
r;;

50A

~

125°~==

TJ

0-

:0

.A

20A
.I

t-

zw lOA
a::
a:: 5A

::>
<..J

w

c

a
z
..:

2A
lA

~ F--125°C

.,....

I

25°C
40°C

0.5A
0.2A
0.5

1.5

2

2.5

3

3.5

4

4.5

5.5

VF, FORWARD VOLTAGE (VOLTSI

Figure 4.22. Maximum Forward Voltage versus Current
IG = 300 mAo PW = 300 ILs
Continuous Gate Drive

This results in a devic'e with low internal capacitan<;e and short turn-off storage delay times, high
peak to average switching power and low material
cost. The GTO can be an elegant solution to switching
problems where other devices would require an
expensive brute force approach.
Like a power transistor. the MGT01000 Series has
an interdigitated emitter geometry to aid turn-on current spreading and resist turn-on di/dt failure. Figure
4.23 shows the involute spiral pattern used.
The GTO also uses the clip and current spreading
ring construction common to thyristors. This improves reliability under high surge current conditions, and results in a high device 12t capability. The
regenerative characteristic of the GTO prevents failure under surge current conditions because it cannot
easily be pulled into the high dissipation active state
common to transistor (BJT) devices. Consequently,
GTOs can be protected by fuse techniques that are
not usable with BJT devices.

Figure 4.23. Involute Spiral Gate-Cathode Emitter
Pattern Provides Constant Arm Width and Spacing

The GTO's attributes make it well suited for app(ications with large momentary stresses.
Such stresses sometimes arise as a consequence of
the external environment not under the control of the
circuit designer, or the stresses may be inherent in the
design itself. *GTO ruggedness may permit simplified
designs, allowing easy application of the device to less
conditioned environments.
*Some sources of stress are listed in Table 4.2.

MOTOROLA THYRISTOR DEVICE DATA
1-4-12

HOW A GTO OPERATES

Table 4.2. Sources of Voltage or Current Stress
I.

Resulting From Unexpected Circuit Fault
1) Load short
2) Stalled motor
3) Transformer secondary with an open circuit

II.

Characteristic of the Type of Application
1) Non-linear loads
2) Capacitative loads
3) Capacitor discharge and crowbar protection
circuits
4) Fault protection by circuit breaking

THE TWO-TRANSISTOR MODEL
Like most thyristors, the turn-on of a GTO can be
described in terms of the two-transistor model (Figure
4.24a). This model also provides insight into the conditions necessary for turn-off. Turn-off occurs when the Nbase current (Figure 4.24b) is reduced from the maximum
provided by the PNP transistor (gate open) to less than
the minimum required to saturate the NPN device
(reverse gate current). When that happens, the gain of
the device (the combined alpha of the two transistors)
falls below unity and regeneration ceases.
However, the two-transistor model fails to provide an
accurate estimate of the turn-off gain because the alphas
are functions of the current density, spatial charge distribution, anode voltage and time.

III. Factors Under Control of the Designer
1) Parasitic capacitance in the load circuit
2) Discharge of the snubber network
3) Diode recovery currents
4) Parasitic inductance in wiring, snubber circuits,
or load
5) Lightning or transients due to interruption of
other inductive loads on the same bus

IA~

ANODE

P·EMITTER

+
-..=-

--

ANODE

I

IC
INPN)
ICX

N·BASE

-j

-

t

P·BASE

!

N·EMITTER

IK

COLLECTO R
GATE

-

-

"l------4t---OGATE

ICIPNP)

1CATHODE

IB(NPN)

.1
Figure 4.24(a). Turn-On

IGR

Figure 4.24(b). Turn-Off

IA = IK' IG = 0
IC(PNP) = apNP IA
IC(NPN) = aNPN IA
IA = aNPN IA + apNP IA + ICX

MAX IB(NPN) = apNP IA
MIN IB TO SATURATE NPN = (1 - aNPN) IK
CRITERION FOR UNSATURATION
apNP IA - IGR < (1 - aNPN) IK
BUT
IK = IA - IGR
(apNP + aNPN - 1) IA < aNPN IGR

ICX
IA = - : - - : - - : : : " : ' - - - ,
1 - (aNPN + aPNP)
WHEN IG > IGT MOMENTARILY
aNPN + apNP > 1 ~ TURN ON
aNPN + apNP < 1 ~ FORWARD BLOCKING STATE

TURN-OFF GAIN

MOTOROLA THYRISTOR DEVICE DATA
1-4-13

IA

= G = Jr.ii =
GR

aNPN
(apNP

+

aNPN - 1)

•

THE TWO DIMENSIONAL MODEL
Figure 4.25 gives additional insight into the switching
process of a GTO. Here, the GTO is pictured as a series
of smaller devices interconnected by lumped RC components that represent the spreading resistances and
junction capacitances within the chip.
Early in the turn-on transient, conduction is not uniform
across the entire chip area. Those portions of the emitter
closest to the gate conduct first and most heavily. The
turn-on of the more remote regions is delayed by the

•

TH

drive signal. Ali three junctions continue to conduct during the storage time interval until the excess carriers in
the gate region have been removed and the gate-cathode
junction recovers. Then the collector junction comes out
of saturation and the anode current decreases rapidly
during the fali time. During the tail (end region of the
"fali time") time, the PNP transistor section of the GTO
is biased in its active region while the remaining carriers
in the N-base support conduction at low current
magnitudes .

THO

TH

.--it--.....- - N

---4~----4I~__l

--+-.....--+---.,.-.....-----4~__l f-----4~-_~-N

f - - -.......- -.....

K

Figure 4.25. GTO Model with Junction Capacitance and
Spreading Resistance Depicted as Lumped Elements
spreading resistance and distributed capacitance within
the chip. The spiral geometry of the GTO minimizes the
distance between the gate and emitter regions and reduces the time required for conduction to spread across
the chip area. This enhances the capability of the device
to conduct large, fast rise current pulses by reducing localized current densities and die temperatures.
The distributed thyristor model also applies to turn-off.
Here the effect results in higher current densities under
the emitter at its center rather than at the periphery.
GTO turn-off is initiated by applying reverse voltage to
the gate-cathode junction to remove current and charge
from the P-base. This results in an internal lateral voltage
drop (Figure 4.26) which acts to turn on, or oppose, the
reverse recovery of the gate-cathode junction. Because
of this, recovery does not take place evenly across the
entire junction area. Those regions closest to the gate
recover first, resulting in a longer path and greater series
resistance between the gate and the conducting area. The
result is a "squeezing" effect that causes the current to
be progressively concentrated in a narrow filament under
the center of the cathode N-emitter stripe. Permanent
damage to the device can result if the current density and
power produces sufficient localized heating during this
process.
The GTO does not respond instantly to the reverse gate

+
K

Figure 4.26. Lateral Drop at Turn-On and Turn-Off. At
Turn-On, Drop Causes Heaviest Conduction at Cathode
Edges. At Turn-Off, Current is Squeezed Away from
the Gate-Cathode Periphery.

MOTOROLA THYRISTOR DEVICE DATA
1-4-14

200

GTO FORWARD CHARACTERISTICS
TRANSISTOR REGION
Figure 4.27 shows the anode characteristics of a
MGT01200. There are two regions of operation. At very
low values of gate and anode current, the anode current
is controlled by continuous gate drive. The anode characteristic is similar to a darlington BJT with base-emitter
shunt resistance. The device does not latch, but its current
gain increases as the anode current is made larger.
Higher gate drive lowers the on-state resistance and forward voltage drop in this region and at moderately higher
currents.
THYRISTOR REGION
When the anode current exceeds the latching current,
the device enters the thyristor region of operation. The
device saturates, allowing the anode current to be determined by the external load circuit. The gate current
must momentarily exceed the minimum trigger current
threshold to achieve operation in this region. Additional
gate drive provides little benefit in reducing forward voltage after latching takes place and the anode current becomes large in comparison to the gate current.

TJ

....

JG = 80
mA

ffi

....

140
120

a:
a:

w

0

0

<[

0
0

'"....'"c:

80

!;(

60

'"
.£'

40

w

'"

\.

" "'

~

20
-40 -20

r-- ~

0
20
40
60
80
TJ. JUNCTION TEMPERATURE 1°C)

100

120

(al. Typical Gate Trigger Current
1.05

en
':;

1

~ 0.9 5

~
0.90
<[

\

~

VD
RL

1""-

f'.-.

0.7 5

~ 0.7 0

'"'"

'"

>

0.5
1
1.5
ANODE TO CATHODE VOLTAGE IVOLTS)

~

""'"

0.65

0.60
0.55

~

= 12 V
= 1.40- -

..... b"
~

-40 - 20

0
20
40
60
80
TJ, JUNCTION TEMPERATURE 1°C)

100

120

(bl. Typical Gate Trigger Voltage

(al. On-State Threshold Characteristic

Figure 4.28. GTO Trigger Characteristics
versus Temperature

20
RGK =

VD = 12V
RL = 1.40

~

ffi 100

'"'"~

TRANSISTOR
REGION IACTIVE)
" _ _- - - - - I G = 20 mA
IG = 1 mA

;z

~

ffi 0.80

THYRISTOR
REGION ISATURATED)

= 25°C

100

«

ffi

:::>
u

':;

«
a:
a:
:::>
u

180

§; 0.8 5

200

E.

«

E. 160

00

E.

....
z
w

~ 10
u

w

0

0

;z
<[

0
0

I

500

1000
1500
2000
ANODE TO CATHODE VOLTAGE IVOLTS)

(bl. Off-State Forward Blocking Characteristic
Figure 4.27. GTO Anode Characteristics

TURN-ON SWITCHING
Reliable triggering of the GTO requires that the turnon gate current and voltage exceed the maximum specified values. Triggering requirements increase at low
temperatures as shown in Figure 4.28. Consequently, the
drive circuit should be designed to supply the needed

drive at the lowest anticipated operating temperature. For
example, to guarantee turn-on at - 40°C, both the 900
rnA and 1.5 volt conditions must be met simultaneously.
The GTO's turn-on drive circuit load line should fall outside the 900 mA box in Figure 4.29. The maximum load
line is set by the peak-forward gate-power rating and
must lie within this safe operating area. At high operating
frequencies or with continuous gate drive, average gate
power will increase and needs to be kept within the three
watt rating.
Standard thyristor practice has been to improve reliability and reduce dildt failures by using a peak gate current two to ten times the minimum gate trigger current.
This is a recommended practice in applications having a
fast anode current rise rate and will reduce turn-on time
and switching losses. The peak repetitive gate power rating sets the upper limit to the amount of gate overdrive
that can be used to speed device turn-on.

MOTOROLA THYRISTOR DEVICE DATA
1-4-15

•

50

ie
::E

$

'""

zw

PEAK GATE POWER 10 WAr::.F
I,...- AVERAGE GATE POWER 3 WAn

20

.........

10

a:
a:
u

~

..........

t;i
<.:>

'r--..,.

40°C

~~ !z
w
z 0.5 f:::~~
I-i-:'ui
>!
z 0.2 1-1"'<':>
CI)
~

<.:>

0

•

~

~~

~5 <.:>
'""
<.:»

za:

~~ 25"C

>!

CI)

~~

>

~!'C>

1=
0.5
1
5
2
INSTANTANEOUS GATE VOLTAGE (VOLTS)

0.2

MGT01000

,

2p.s

..... <.:>

0.1 Et"o
0.05 1'=<':>
0.1

i'-

ui

The rate of GTO turn-on increases regeneratively with
anode current. Moderate gate drive amplitudes result in
comparable delay and rise times. Gate overdrive shortens the delay time (Figure 4.31) and should be used wherever the GTO is likely to face turn-on stress. Device regeneration improves the rise time versus current
characteristic, causing it to be very flat with little slowdown at higher currents (Figure 4.32). GTOs switch
quickly even under high overload conditions.

10

I I

"-

r--

~,

"

Figure 4.29. GTO Firing Characteristics

-,....

.........

~
The gate current rise time should be faster than the
anode current rise time to aid in spreading current conduction (Figure 4.30). During turn-on, the gate input
impedance of the GTO appears inductive. Applications
involving fast, high anode current spikes require measures to minimize the parasitic cathode inductance in the
gate drive current loop. High values of turn-on diG/dT
are most easily achieved by driving the gate with a high
voltage compliance current source to overcome the gate
circuit inductance.

~

diG", 10 (lJp.s
300 - d T
200 ns

-

VD = aDo V

~

FIRING CIRCUIT LOADLINE MUST FALL OUTSIDE BOX FOR CHOSEN MIN TJ AND
INSIDE THE (V. I) CONSTRAINTS SET BY THE AVERAGE AND PEAK GATE POWER.

I

TJ START = 25°C -

o

IA = 75A= -

--

tr

.............

td

3
4
5
7
PEAK GATE CURRENT (AMPS)

10

Figure 4.31. Effect of Peak Gate Current on
Turn-On Time

MGT01000
2.0

I

I

ton = td + tr_

.....- V

MGT01000

- --

tr ~
d = 7 (lJp.s
T
,-

".'

I-"'

..... ......

V

V

/1'

V

t ~ = 225 . /
::;(
_r dT

V dl l
--71d~ =

V
./

o

10

20

30

-

!

- -......-

TJ = 25°C_
VD = 800 V
22.5 (lJp.s

40

50
60
IA(AMPS)

70

I I

aD

/'

0.7

!:ll

IG(pk) = 6A -

7/,

_~ ~ =

0.1 p.s

,........,

1.0

90

100

~ 0.5

,
/'

0.3
0.2

/

--

tr

~

/

/

m w

I--

~

~

-

I-""

--

TJ = 125°C
VD = 80DV
- IG(pk) = 6A
_ dlG/dT = 7 AIp.s

40
50
60
M
ANODE CURRENT (AMPS)

80

80

Figure 4.32. Typical Turn-On Switching Speed
versus Anode Current

Figure 4.30. Turn-On Speed versus Gate
Current Rise Time

,',
".J.

MOTOROLA THYRISTOR DEVICE DATA
1-4-16

100

The GTO has excellent di/dt capability and may not
require a series anode inductance to slow the current rise
time (Figure 4.33). It is capable of switching an 800 volt,
100 ampere resistive turn-on load line (Figure 4.34). The
temperature coefficient of the GTO's turn-on switching
loss and on-state voltage is outstanding (Figure 4.35). The
difference between room temperature and high temperature operation is nearly negligible at moderate to high
currents. A dozen GTOs operated in parallel can switch
a one megawatt pulse.

•

VD = 800 V, IA(pk) = 100 A, TJ START = 125°C
GATE CURRENT = 1 AlDiv, ANODE CURRENT = 20 AlDiv
ANODE VOLTAGE = 100 V/Div, I = 200 ns/Div
Id = 720 ns, Ir = 720 ns, E(onl = 12.8 mJ, dlG/dT = 7 AI p.s

Figure 4.34. GTO Turn-On Waveform (Nonrepetitive)
MGT01000
IA

MGT01000 Turn-On Snubber Discharge Transient.
Inductive Load

II
I

1

0.2 p.s/Div, 10 AlDiv, f = 60 Hz, TC = 40°C,IA(pkl = 70 A, Cs = 0.05/LF
RS = 4.5 Ohm, Vc INITIAL = 770 V, IGF(pkl = 16 A, dIGl:JdT = 18 AI p.s
dlAidT = 150 Alp.s, TURN·ON ENERGY = 5.7 mJ

~Id

Ui

l(onllA = 100 A

/

I/I(on) IA = 50 A

/
Ir

100A

50A

tr,IA

l~A- -'-

307
w
.
~
~

0.5

,

(a)

......... td = 50A
0.3

I

0.2
25

35

45

55
65
75
85
95
TJ. JUNCTION TEMPERATURE (OCI

VD = 800 V, IGF(pkl

105

115

dIGF'

= 6 A. Or = 7 AI p.s

Figure 4.35. Typical Turn-On Switching Time
versus Temperature Junction

(b)
IN INVERTER APPLICATION DIODE RECOVERY, CURRENT AND SNUBBER CHARGING
CONTRIBUTE TO GTO TURN·ON STRESS.

Figure 4.33. GTO Transient Handling Ability

MOTOROLA THYRISTOR DEVICE DATA
1-4-17

125

•

with a lower impedance element to rapidly supply the
latching current when the power losses are not
prohibitive.

ITSM
The non-repetitive sine wave surge characteristic (Figure 4.36) is intended to describe the capability of the GTO
under unexpected fault conditions, such as those resulting from a short circuited load. Current surges of this
magnitude should not be common or normal in the application. Under these conditions, the peak junction temperature will exceed the maximum rating and the part
may not block voltage or regain gate control during, or
immediately following, the surge. Operation at junction
temperatures exceeding the maximum is permissible for
short time periods, and the part will maintain its rated
characteristics when the temperature returns to normal.
This type of rating is traditional for thyristor devices and
is included in the GTO ratings to allow comparison and
to provide a measure of the extreme current conducting
capability of the device. Protecting the device in these
circumstances will be done by fuses rather than by its
gate control capability. Interruption of the anode current
is mandatory if the anode current exceeds the gate maximum non-repetitive current rating. An attempt at a gate
controlled turn-off at currents above this level may cause
the device to fail catastrophically.
~

1000
700

~

15
a::

~ ~

500

a::

-

~ ~

>=

u.

fb~

"i'
z
o
z
~

l"- i- :::::

~

"

U)

a..

::;;

S

IL

I"

2

....

~
~

MGT01200

~

::;)

u

~
z

1

«

IH/

7
O. 5

0.4

~

'"

0

II

~

i""..

~

./

V
-40

-20

0
20
40
60
80
TJ, JUNCTION TEMPERATURE (OC)

CONDITIONS:
VD = 12 V
RGK = 00
GATE PW = 10 f.LS

~

...... 1-"
121

......

0
10
0.2

!\.

100

120

ANODE PW = 300 ILS
f=60Hz
IG(pk) = 1 A

ITSM

300
200
100
70
0

o~

3

Figure 4.37. Typical Latching Current

"-

::;)

~ ~
~ ~
~ ~

4

--4:=
1

-

I 111111

0.3

0.5 0.7

0.1
2
3
5
PULSE WIDTH TIME (ms)

Continuous gate drive throughout the conduction cycle
at an amplitude above the maximum specified IGT value
can also be used to prevent holding failure in situations
where the load current could fluctuate to an unusual degree. However, this technique results in reduced drive
efficiency.
Figure 4.38 illustrates an adapter that allows pulsed
measurement of GTO latching and holding current on a
Tektronix 576/176 curve tracer.

1-

10

20

Figure 4.36. Non-Repetitive Surge Characteristic

LATCHING
Optimum GTO drive efficiency requires latching. This
permits the reduction ofthe on-gate pulse width and duty
cycle and results in lower average gate power.
GTO latching currents are higher than those of SCR
devices. The gate current must be held at a value above
IGT until the anode current exceeds the latching value.
Latching current depends on junction temperature (Figure 4.37) and is highest at low temperatures. The snubber
discharge current can be used to aid in achieving latching
when the load is strongly inductive and the anode current
rise would otherwise be slow. In this case, the snubber
discharge time constant must be selected to maintain the
anode current above the latching value until the load
current rises sufficiently to achieve the holding state. Alternatively, it may be feasible to shunt inductive loads

FORWARD BLOCKING
The blocking equation can be modified to include the
effects of avalanche multiplication. The turn-on criterion
becomes:
ICX
IA = 1 _ (VRNBO}N _ aNPN _ aPNP N "" 1 to 5
Avalanche multiplication works in conjunction with the
device alphas to increase the possibility of unwanted
turn-on, particularly at high voltages and high temperatures where alpha increases as a function of both leakage
current and temperature.
The GTO and SCR share this blocking model. However,
the GTO uses anode shorting techniques which reduce
aPNP below that of an SCR. While blocking, conduction
of the NPN transistor portion of the device is supported
mainly through the anode shorting resistance across the
P-emitter-N-base junction. This improves high temperature leakage characteristics. In addition, the high forward
blocking voltage of the GTO provides a voltage margin
in applications which do not require its full voltage
capability.

MOTOROLA THYRISTOR DEVICE DATA
1-4-18

MR510
0.5 n
20 J.'F
ANODE SENSE~I--+---t~---,
lN4004
ANODE POWER D------__I'v---II----....-t--oANODE POWER
~--o

ANODE SENSE

...----0 GATE SENSE
0.27
lN914
BASE POWER o---<.--4Ii-....- -....-+---I~.....---o GATE POWER

176 ADAPTER PW = 300 J.'S
flREPI = 60 Hz

GTO UNDER TEST
300

300

OPTIONAL
RGK

lN914

.....- .....> - - - -.....---o CATHODE POWER

EMITTER POWER o--~--~-EMITTER SENSE 0

OCATHODE SENSE

Figure 4.38. Curve Tracer Adapter for Measurement of Pulsed Latching and
Holding Current with Reduced Heating Tolerances
The GTO exhibits sustaining voltage behavior (Figure
4.27) similar to that of a high voltage transistor. The
anode current at high voltages depends on the effects of
avalanche multiplication in the collector depletion layer
and the transistor action. With the gate open-circuited,
carriers freed by multiplication are acted upon by the NPN
transistor gain, and result in lower blocking capability.
Blocking voltage can be improved by 100 to 300 volts by
providing a low gate termination resistance or, still better,
a reverse bias.

STATIC dv/dt(s)
Under extreme conditions, unwanted GTO turn-on can
result from a rapid anode voltage spike even if its amplitude is below the device breakover region. This is a

result of the current induced through device selfcapacitance by the rapidly changing voltage. Snubber
networks, which suppress rapid transients, are the common technique for preventing dv/dt(s) turn-on.
At values above 2000 V/microsecond, the GTO tends
to respond to displaced internal charge and to the amplitude of the applied voltage rather than its rate. In this
case, lower peak voltages reduce the possibility of unwanted turn-on more effectively than direct suppression
of the rate of voltage rise.
dv/dt(s) performance depends strongly on the gate
termination conditions. Low impedance values and gate
reverse bias improve dv/dt(s) capability. Figure 4.39
shows the measurement circuit used.

Figure 4.39. Test Circuit and dv/dt(s) Characteristics of a GTO
7 A. 13 DIFFERENTIAL PREAMP
7 A. 23 A STORAGE SCOPE

GTO HEAT SINK
HEATER
POWER

l---oD:
:

---0

HP 214 A
f = 10 Hz, PW = 100 J.tS
20 VISO n RANGE

W&@j
DISCONNECT HEATER
POWER WHEN HIGH
VOLTAGE APPLIED

20 k
10k lOW
ALL RESISTORS
2 WCARBON
UNLESS OTHERWISE
INDICATED

GTO UNDER TEST

220n
20 W
NON.INDUCTIVE

lN914

18V
lN967A

(a) Linear Static dv/dt(s) GTO Test Circuit
:

MOTOROLA THYRISTOR DEVICE DATA
1-4-19

0.47
1.2
kV

KEPCO
ABC

+

1kV

MTPN100

.... '

0.47
1.2 kV

WfN

•

50K
30K
REGION OF VO~TAGE
MAGNITUDE DEPENDENT
TURN·ON

10K
8K
5K

:t
:>

i"

•

3K
VAKlpk) = 800
RGK = 300 n

vI\.

lK
800

200 V/Div, RGK = 39 n, TJ = 12BoC

'

500

........

REGION OF VOLTAGE RATE
IDE~ENpE~T Tp~~.O~

Figure 4,39(b). Double Exposure Showing Static
dv/dt(s) Waveforms

1,1

1
95

100
105
110
TJ, JUNCTION TEMPERATURE 1°C)

115

MGT01000 Typical
Figure 4.39(e). MGT01000 Typical Linear dv/dt(s)
150

~14O

~130

~

120

ili
I-

110

If

"

.......

.......

'

F

~ 90 -

:;

= 25n5
80 -RGK = 300n
0

60

The GTO is an asymmetrical part. Because of its
shorted anode structure, the GTO's reverse blocking volt·
age capability is much lower than its capability in the
forward direction. Its ability to block depends on the gate
cathode termination conditions and approaches zero in
circuits with no reverse gate voltage and zero ohms RGK.
Applications requiring more than 15 volts reverse
blocking capability require the addition of a series block·
ing diode. This increases conduction losses because of
the additional diode forward drop (Figure 4.40).
Some applications will require reverse conducting capability. This is achieved by adding a "flywheel" or antiparallel diode with the necessary current handling ability and response time.

........

~ 100
::>

REVERSE BLOCKING AND CONDUCTING

.......

trv

I

I

"'" "

'\.

400
500
600
700
BOO
900
1000
VAK, PEAK ANODE TO CATHODE VOLTAGE IVOLTS)

Figure 4,39(c). Linear dv/dt(s)
MGT01000 Typical

U 160
"-- 150
~ 140
\.
~ 130
I\.
If 120
~ 110
~ 100
B 90 r- VAKlpk) = 1000 V
§5 80 r- dv/dtls) = 40 kVI JLS
.........
:. 70 rLINEAR
,::' 6Or5Or- VGR = 0 VOLT
40
10
100
RGK, GATE·CATHODE RESISTANCE 10HMS)

"-

....

GTO
GTO
SERIES
BLOCKING
DIODE

-...

Figure 4.39(d). MGT01000 Typical RGK to
Prevent dv/dt(s) Turn-On

ANTI·PARALLEL
DIODE

1k
REVERSE BLOCKING

REVERSE CONDUCTING

Figure 4.40. Modification of GTO Reverse Characteristic

MOTOROLA THYRISTOR DEVICE DATA
1-4-20

The GTO is a minority-carrier controlled device. Turnoff requires that the excess carriers stored in both base
regions be removed or allowed to. recombine.
An optimum turn-off drive circuit will apply a reverse
bias across the gate-cathode junction for at least the entire duration of the anode transient or until a steady state
blocking voltage results. Since blocking and immunity to
dv/dt transients are improved by reverse bias. it is desirable to keep the gate-cathode junction reverse biased
throughout the off period.

TURN-OFF SWITCHING
Inductive load switching results in a fast "kickback"
voltage pulse. increasing stress on the switching device.
Under these circumstances. preventing device failure is
a paramount concern. Because simultaneous high voltages. currents and junction temperatures result during
the turn-off transient. optimization of the drive circuit is
recommended to reduce energy loss and improve efficiency. GTO performance depends on the drive and
anode circuit conditions. Figure 4.41 illustrates typical
switching performance.

GTO MEASUREMENT AND DEVICE PROTECTION
SWITCHING MEASUREMENT
Figure 4.42 illustrates the drive circuit and terminal conditions used to evaluate GTO switching parameters. Figure 4.43 shows the circuit used for GTO turn-on and turnoff switching tests. However. a resistive load and a high
voltage supply replaced the inductor, clamp and low voltage supply used for turn-off measurements. The snubber
is used in both turn-on and turn-off measurements. It is
important not to turn off the driver bias supplies while
the anode circuit is still energized. Doing so will cause
device failure by starving the reverse gate current.

TC = 125'C. Cs = 0.068I-'F. LG = 2 I-'H, RG = 3 n
Vo = 800 Vlpk).IA = 60 Apk. PW = 100 I-'s, VGR = 12 V
f = 50 Hz, LA = 38 I-'H, 0.5 !-'SIOiv, 10 AlOiv, 100 VIOiv

(a). GTO Snubbed Inductive Load Turn-Off

DESCRIPTION OF THE MEASUREMENT CIRCUIT
A coil charge time of 150 microseconds was used for
the turn-off measurements to insure complete GTO saturation and to provide worst case switching estimates
characteristic of saturated mode switching.
Turn-off is initiated by applying reverse voltage from
a low impedance source through a gate current slowdown (dlG/dT = VGR/LG) inductor.
On the anode side of the circuit. a polarized snubber
was used. Turn-off dv/dt is determined by the snubber
and can be solved for as:

dv/dt(c) = Ipk/C.
The size of the anode inductor depends on the desired
peak anode current. This inductor must be selected to
maintain the flyback voltage duration beyond the tail time
of the GTO. More inductance is required for lower test
currents. The size of the inductor can be estimated by:

TC = 125'C, IAlpk) = 110 A
Vo = 240 Vlpk). PW = 100!-'S. f = 10 Hz
1 J.tSi0iv, 20 AlOiv, 50 VIOiv, LA = lOI-'H
LG = 2 I-'H. RG = 3 n, VGR = 12 V

L> (toff x Vcl amp ) Ilpk
The clamp was used to insure accurate definition of
the GTO peak anode voltage rise. This improves measurement repeatability. prevents avalanche of the GTO
and provides freedom in the selection ofthe load inductor
size. Without a clamp. the peak voltage will approach

L ) 112
Vpk = Ipk ( Cs

(b), GTO Unsnubbed Inductive Load Turn-Off

Figure 4,41. GTO Turn-Off Switching
Under Inductive Loads

MOTOROLA THYRISTOR DEVICE DATA
1-4-21

•

6,680

I

NOTE: SHORT THE 1N758 DIODES
FOR USE WITH IEC F34
± 5 V FUNCTION GENERATOR

V

J
SO~,,~
PREM SPE109 I~

0.01
II

+ 10TO 15 V

j

"'" MJ4237
1.5
1/2W

• lN4933

. SET
I PLATEAU

10
1/2W

0.47

lN4933

"

a

4,560

10V "
lN758
t:.o

+
33

\L
JI

1

0.001

43

\,

18V ':~ 2.2000 ~ f'
lN5248
20V

~

-=-

lN914

..

lN758
~

l~V

j

120

~

lN4933

1.

CO~+

UOUS
ON·DRIVE
OUTP UT

PULSED ON
DRIVE OUTPUT /

"'

0.47

MTM60MO~1 ~ D

100

\1

~r 18V

4.560

lN4933

S

1
25 V

lN5248

(

10TO 15V

+

Figure 4.42. GTO Laboratory Driver. All R's 2 W NonInductive. (4,560) Indicates Parallel Resistor
Combination. All Capacitors p.F unless otherwise
noted.

PEARSON MODEL 4.11

MR
760

33.50 WATT
NON·INDUCTIVE

+4---,

++4---.--..J
VCC

Cs

Rl
NON·
INDUCTIVE

VGR = 12 V
IT = 50 A(pkl
IG(pkl = 6A
lG=2J.'H
Cs = SPECIFIED VALUE
VCC = SPECIFIED VALUE
PW = 150 fJS
f = 10Hz
ADJUST Rl AS REQUIRED FOR IT(pkl

~

_ (0.81 (6 AI
dT trUGI

(a). Resistive Switching Test Circuit (Turn-On)

MOTOROLA THYRISTOR DEVICE DATA
1-4-22

++

TO GTO
GATE
VGR
OUTPUT /

-::!:91

~

2N6190

SOV

j

1.5

91

\,~ lav

2.2000 , ;
20 V

91

P1770

1/2W
+

1 kO

SET
IpEAK

V2N6274

"

91

0.45

~ Pl423
......... MJ4237

001 '

>-

L
,..,.,

91
HP214

0.5

680

PL82
2N5336

1

~25V

'"' 10 V
lN758

r

+20V

...

20

PEARSON MODEL 411

VGR = 12 V
IT = 50Alpkl
LG=2/LH
Cs AS SPECIFIED
PW = 150 JLS
f = 10 Hz
ADJUST Vee FOR SPECIFIED IT

33,50 WATT
NON-INDUCTIVE

MR
760

SCOPE = TEK 7623A
P6007 x 100 V PROBE

CLAMP

+-----,

'CLAMP: TRANSIENT SUPPRESSOR ZENER
SERIES STACK, lN6292 OR 1.5 KE75
ADJUSTED FOR SPECIFIED Vlpkl

VCC
0-60 V

Cs

++-----.~~

(b). Inductive Switching Test Circuit (Turn-Off)

Figure 4_43_ GTO Test Circuit

This is due to a shortening of the storage and fall time,
which reduces the number of charge carriers injected
from the P-emitter and the proportion recovered through
the gate.
The maximum value of steady-state gate reverse bias
is limited by the avalanche of the gate-cathode junction
and by the gate maximum ratings_ Typical GTO gatecathode voltage breakdowns are large to facilitate turnoff. Driving the gate-cathode junction beyond avalanche
does not benefit switching and only serves to increase
the gate power dissipation, reduce drive efficiency and
raise junction temperature_

TURN-OFF PARAMETERS AND CHARACTERISTICS

OGO is the amount of charge per turn-off cycle
removed from the gate of the GTO through the storage
and fall time intervals (Figure 4.44). A small amount of
additional charge will be removed because of current
tailing.
For constant LG and VGR, 0GO is directly proportional
to the peak anode current prior to turn-off.
Higher values of VGR will increase the peak gate reverse current (IGO) and lower the turn-off gain (BR) but
will not rapidly increase the total recovered charge.

MGT01200
70

~
.....
t!:>

60

en

i

.....
.....


.....

.....
Cl..
o0

10

4...,V

---::::: Isi_
~

/;.--- f---': V

",/

c:::::- V--

'7

~

/"'"

~

_Iii

::-V-TJ

=

125"C
1

.!:'

m

10

4.5

l - - ~ P"'IT!P_

IGJ

15

a:

g10~

o

800

l-

as
40 a

a:
:I:

25

w

~
50
50
PEAK ANODE CURRENT lAMPS I

Cs

=

O.l/LF, Vlpkl

RG

=

3 n, VGR = 12 V, PW

=

70

o

80

800 V, TJ = 125"C, LG = 2/LH
=

150 JLS

Figure 4.44. Typical Turn-Off Dynamics (Inductive Load)

MOTOROLA THYRISTOR DEVICE DATA
1-4-23

0.95

•

•

The gate current slowdown inductor, LG, influences
most of the turn-off parameters. This inductor, along with
the reverse turn-off voltage supply, determines the rate
of change of gate current during the initial part of the
turn-off transient, until the rising gate-cathode impedance dominates the current response and stops the linear
ramp.
LG provides an additional momentary inductive voltage kick that aids the turn-off voltage supply by avalanching the gate cathode junction at the moment the reverse
gate current reaches maximum and begins its rapid decline. This aids in preventing the attenuation of the reverse gate current by the rising cathode impedance. The
duration of this pulse can be adjusted by adding a clamping resistor across the gate inductor. This technique maximizes the instantaneous turn-off voltage without the
drawbacks associated with the use of a high VGR supply.
LG is also a gate-cathode recovery slow-down inductor.
When it slows the rise of the reverse gate current, it also
delays the recovery of the gate-cathode junction, which
leads to longer storage and fall times. Those effects can
be undesirable. Still, there are benefits from the use of
LG. They include preventing early recovery ofthe cathode
emitter at only those regions near the gate periphery.
LG reduces localized heating and helps hold the die
temperature even. When the GTO begins the turn-off process, reverse gate current and the internal lateral voltage
drop focus the current into the area under the center of
the cathode emitter stripes. If the current density and
applied voltage go high enough, localized heating will
permanently damage the device. The gate recovery slowdown inductor helps prevent this by reducing and delaying the instantaneous amplitude of the reverse gate
current to insure a more homogenous turn-off of the
cathode.
When LG and VGR are constant, the peak gate reverse
current in the GTO will increase slowly with anode current
as shown in Figure 4.44. The turn-off gain can be raised
by using a larger LG, which also results in a longer storage time. QGQ increases slightly for larger LG values
because of the increase in ts.
Consequently, it is not necessary to greatly increase
the drive to the GTO to achieve operation in overload
situations. The peak reverse gate current that must be
conducted by the turn-off drive transistor can be reduced
by the selection of larger values of LG. However, this will
not reduce the average current required from the turnoff supply.
In other words, there are counter balancing considerations in selecting the gate recovery inductor. It should
be small to reduce storage time and dissipation during
fall time, but it should be large to improve switching
energy handling ability, gate drive efficiency and turn-off
gain. The reverse gate current will usually be higher than
the reverse base current in similar darlington drive configurations. However the peak current flows for only a
few microseconds and does not require the drive circuit
to handle high average current or power. The reverse
gate charge recovered from a GTO compares favorably

with that observed in darlingtons with turn-off speed-up
diodes.
Control of ITLP and the tail time duration is of particular
importance in inductive switching applications because
the anode voltage is often very high and the "tail" can
result in heating and device failures.
Larger values of LG result in reductions in tail current
magnitude. The increase in dissipated energy during the
resulting longer fall time counterbalances the benefits of
reduced tail time dissipation and also suggests an upper
limit on the size of LG. LG must be small enough to permit
enough reverse gate current to exceed the threshold necessary to unsaturate the device and start turn-off. The
peak reverse gate power rating may set the lower limit
to the size of the gate inductor in some applications.
Reverse gate current can approach the magnitude of the
anode current and lead to gate failure if no limiting is
used.
In some situations, it may be better to have a slower
current fall time. High turn-off dildt can lead to increased
GTO voltage stress due to increased parasitic inductance
in the snubber and clamp circuits, which can cause overshoot when these elements are switched on (Figure 4.45).
These spikes can be largely eliminated by circuit layout
techniques which are not difficult at the 50 ampere level.
The tail current is a function of the peak anode current
prior to turn off, junction temperature and the rate-ofrise' of the anode voltage. It increases with any of these.
LA
Lcp

DC

LSp ; LUMPED PARASITIC
SNUBBER INDUCTANCE
RS

LCp; LUMPED PARASITIC
CLAMP INDUCTANCE

+
VCLAMP

VCLAMP

DUE TO SNUBBER
LOOP INDUCTANCE-LAP, LKP, LSp

DUE TO DC, REV RECOVERY

ABERRATIONS IN THE FlYBACK VOLTAGE WAVEFORM CAUSE INCREASED POWER
DISSIPATION AND GTO STRESS. THIS PROBLEM CAN BE REDUCED BY LAYOUT
TECHNIQUES AND COMPONENT SELECTION TO MINIMIZE THE PARASITICS
SHOWN.

Figure 4.45. Effects of Undesirable Parasitic Circuit and
Component Inductance at Turn-Off Time

MOTOROLA THYRISTOR DEVICE DATA
1-4-24

Figure 4.46 is a plot of power versus time for an operating GTO. The first peak in the curve corresponds to the
fall time and the second, larger peak to the tail time. In
the example, the tail time is the major contributor to turnoff energy dissipation. Similar waveforms were integrated to generate the switching loss curves (Figure 4.49).

5000.----,r----r--,-,--,--,---,--r--r-..,

E45001---+---f-/-:I:~,.---+--+-t---+--t-+--f
~ 40001--1--+-+
/-+--'lI--I--+-+--I----t--I

At higher voltages, unsnubbed operation allows much
less peak anode current. However, the continuing drop
in permitted maximum current takes place at a much
slower rate.
The snubber limits the rate of anode voltage rise and
changes the shape of the turn-off load line, causing the
locus of instantaneous (Va, la) coordinates traversed by
the GTO to pass through lower power values. Lower
dv/dt(c) speeds turn off due to reduced Miller effect and
provides additional time for the GTO to reduce its current
before having to withstand high voltage. This brings the
turn-off load line (V, I) locus of points below the instantaneous capability of the device.

~ 35001---+-+-/1-+---+1\r--+--+-+--+--t--I

2 30001--A1f----II'---+-+~+--t-_t--t-+-,

r

~

"-

~ 2500~/1--k-1'\-/_ft_---jf__-+---l'<--'\.+--+--+---+----i
~

2000

~ 1500 I V
~ 1000h~/+_--I-_+-+_--I-_+__'Io'\.+-__I--+___l
~ 5001l1/- + - + - - t - _ t - - t - - + - ,...........
-=="-10=-+-,
---r-.0.4

O.B

1.2

1.6

2
2.4
t, TIME (/LS)

2.B

3.2

3.6

100
7
5

Cs

C1
Cs

~

'%~A'-

2

Cs

C4
C5

Cs

C6

0
7C=

UNSNUBBED
T

2
TJ ,,;; 125°C
1 PW = 100/LS
7 LG=2/LH
5 VGR = -12 VOLT

Figure 4.46. Turn-Off Power versus Time
2

SWITCHING SAFE OPERATING AREA
Figure 4.47 describes the switching SOA capability of
the GTO. The turn-off capability of the device is shown
to be determined by the snubber size and dv/dt.
The unsnubbed operating limit has a voltage sensitive
roll-off characteristic similar to the second breakdown
derating shown on power transistor safe operating area
(SOA) curves. Since the clamped unsnubbed inductive
switching loadline is nearly square, it represents the instantaneous (V, I) handling capability of the device. The
initial roll-off shown on the graph has a steeper slope
than a constant power line. This is thought to be the result
of the SOA capability of the GTO.

1

Cs

MGT01000,M

C1

0.20/LF
0.15
0.10
0.05
0.022
0.Q1

t- C2

E

!=

i=

C3
C4
C5
C6

T

MGT01200,M
MGTOl400,M
0.10/LF
0.06B
0.05
0.022
0.Q1
0.005

SNUBBED ~ = IA(pk)
dt(c)

100

CS

200 300 400 500 600 700 BOO 900
PEAK ANODE TO CATHODE VOLTAGE VDRM (VOLTS)

1000

NOTE: IN BRIDGE INVERTER CONFIGURATIONS THE UPPER AND LOWER
SNUBBER CAPACITORS ARE IN PARALLEL PERMITIING A SNUBBER;;.

¥

WHEN

STRAY INDUCTANCE IS KEPT LOW. UNSNUBBED OPERATION IS NOT
RECOMMENDED ALTHOUGH HIGH CURRENTS AT LOW VOLTAGES CAN BE
SWITCHED GIVEN WELL DEFINED LOAD CONDITIONS. THE USE OF A SMALL
SNUBBER INSURES THAT THE WORST CASE dv/dt STRESS IS KNOWN.

Figure 4.47. Maximum Gate Controlled Interruptable
Current (Rating is Non-Repetitive at I > 50 Al

MOTOROLA THYRISTOR DEVICE DATA
1-4-25

C3- -

Cs

~~.---CS

5

PEAK ANODE CURRENT = 50 A, AVERAGE ANODE CURRENT = 17.1 A
TC = BloC, f = 1 kHz, Cs = 0.05/LF
VCLAMP = BOO V, LA = 25 /LH, LG = 2 !-tH
VGR = -15 V, TURN·OFF ENERGY = 7.B mJ

C2

•

•

Power and energy dissipation in the GTO tends to be
greatest during the tail time because the anode voltage
is highest then and because the decay of the tail current
is relatively slow in comparison to the fall time.
The primary influences on the magnitude of tail current
for a given set of gate drive parameters are temperature
and dv/dt(c). Figure 4.48 shows how the anode current
ramp is influenced by dv/dt(c). This current can be
roughly modeled as the result of dv/dt across an equivalent capacitance. An abrupt failure will result if this current exceeds the SOA (V, I) capability of the GTO.

A

fo}

N

::v.I
Ilpk} - - - - - - ,

CEQ
~

dv
CEQ dt < I SOA FAILURE

~----_Vlpk}

Ib}

Figure 4.48. dv/dt(c), SOA Model Of GTO Failure

Like SCR devices, dv/dt effects in GTOs increase rapidly
at junction temperatures at or above 125°C. The use of
larger heat sinks to control the worst case TJ will provide
significant increases in the switching safety margin.
It is desirable to minimize the snubber capacitance to
improve circuit efficiency and allow higher switching
speeds. The stored energy in the snubber capacitor is
dissipated in the snubber resistor each cycle when RCD
snubbers are used. This makes the snubber loss directly
proportional to frequency. However, the snubber capacitor must be large enough to prevent turn-off failure under the worst case conditions.
A polarized snubber provides effective dv/dt limiting
by providing an alternative path for the load current
which is diverted into the snubber. Most of the stored
energy in the load inductance is transferred to the snubber capacitor where its charging aids in limiting the kickback voltage. The snubber diode must be capable of conducting the peak anode current and blocking the peak
voltage. The snubber resistor is used to limit the component of anode current supplied from the charged snubber capacitor at GTO turn-on during the next conduction
cycle, and to prevent turn-on di/dt failure.

The snubber RC time constant must be selected to insure that the snubber capacitor fully discharges during
the minimum GTO conduction time. Failure to achieve a
low voltage initial condition will result in higher than
anticipated anode voltages and dv/dt stress when the
anode voltage abruptly flies up to the remaining capacitor
voltage at turn-off time.
Measurement and application circuits using polarized
snubbers and/or clamps should minimize the wiring inductance to these components to prevent overshoot in
the anode voltage. These elements will be small enough
to permit installation in close proximity to the GTO. The
effects of parasitic inductance become more prominent
at high current levels, requiring increased attention to
management of current parasitics.
FAULT PROTECTION
The IT(CSM) rating is a measure of a GTO's ability to
interrupt the current in a load under fault conditions. This
allows overload protection of the GTO by means of its
own gate turn-off capability.
Switched voltage source applications require the addition of a current slow down inductor to prevent excessive anode current rise before turn-off time. The ability
of the GTO to self protect depends on its storage time
and IT(CSM) capability as well as the speed of the fault
detection and shut-down circuit. Storage time increases
with the anode current and is roughly proportional to the
square root of the peak current prior to turn-off.
Snubber design must consider fault conditions as well
as normal repetitive operation. Turn-off cannot be attempted until the snubber circuit has been nearly discharged at least several time constants after the beginning of device turn-on. Failure to initialize the snubber
capacitor will lead to high dv/dt stress and probable device failure if a fault-initiated shutdown takes place early
in the conduction cycle.
Options for the protection of the GTO depend on the
abruptness and severity of overload. Higher fault currents
are allowable when device protection is accomplished by
fusing techniques that rely on the device 12t capability.
Gate turn-off must not be attempted at currents above
the IT(CSM) value if device destruction is to be avoided.
POWER DISSIPATION AND HEAT SINK DESIGN
The GTO is designed to operate at peak junction temperatures of 125°C or less. The management of maximum
peak instantaneous junction temperature is particularly
important at turn-off time because the stress on the device and the possibility of failure is greatest then. Conventional SCR phase control curves do not require forward blocking capability until the beginning of the next
ac cycle and allow operation at instantaneous junction
temperatures exceeding 125°C. The GTO may be required
to turn off, withstand high dv/dt stress and forward block
at any time in its conduction wave form. In addition, it
may be operated at high frequencies where the power
dissipation due to switching losses is a major component
of the total average power. Actual GTO devices exhibit
superior extreme high temperature blocking capability

"'~

:,

:

.. '

",

,- .

MOTOROLA THYRISTOR DEVICE DATA
1-4-26

" f ...:>:

•

and are capable of operation at higher temperatures than
SCR units. However, the conditions of use will often place
more stringent requirements on GTO devices. Consequently, a conservative approach to heat sink design and
thermal control is advisable.
GTO phase control rating curves showing average current, power dissipation and allowable case temperature
versus conduction angle, are similar to SCR curves. These
curves describe operation from an ac line or chopping a
dc source at variable duty cycle under low frequency
conditions where switching power is negligible and the
assumption of a current pulse with zero rise and fall time
is valid. These curves do not adequately describe peak
pulse device capability when inductive, capacitive or
high-frequency switching is involved.
Figure 4.49 allows estimation of the heat sink requirement under pulsed and higher frequency conditions. The
total power that must be dissipated in the heat sink is
given by:

100

f= TJ

125°C
VOIRXM) 400
I- IGFlpk) = 6 A
r- dlGF/dT = 7 AI/'S

f: Vo

r;;
"::;;

~

....

1l:i
a::
a::
:::>
u

z

10

a
Z
a::

f---,

....:::>

«
'"w
"-

1

V

~ ~V
-

="X"

I--

MGT01000,M
MG T012oo,M
MG T01400,M

100

1
10
ENERGY IMILLIJOULES)

0.1

Figure 4.49(bl. Maximum Energy Per Pulse at Turn-On

Ptotal = Pt(on) + Ptf+ Ptail + Pconduction + Pgate + Pleakage
Poff = Ptf + Ptail
P(AV) = Energy per cycle/Time per cycle

....
z
w

Wave shapes departing from those described may
require multiplication and integration of the operating
voltage and current waveforms in the actual application.
Peak TJ can be estimated using the transient thermal
response graph (Figure 4.49g) and the method for finding
the temperature at the end of the N + 1 pulse in a rectangular pulse train. Non-rectangular pulses can be modeled
as an equal energy rectangular pulse at the same peak
power. This provides a worst case high junction temperature estimate. Refer to Motorola Application Note
AN569 "Transient Thermal Resistance - General Data
and Its Use" for more information.

!l§

~

10
B.O

~~~.

8 5.0
~

~

3.0
2.0 'IG = 300

ffi

~
w

I'\.

90

~ 70

llJJI

0.01

~

!

40
::;; 30
:::>

::;; 20

~

f - - =TJ
f--

-

/'

I\,

o

-SO

?' /'

1.0

\.

/'

/"

0.20/LF

0.15 JLF
V/, "- 0.10/LF
~ 0.05/LF
0.022/LF

II
10
20
IT, PEAK ANODE CURRENT (AMPS)

0.2

\

75
25
50
100
TC, CASE TEMPERATURE 1°C)

./

~ ~ "\

:/'

\.
-25

10

?I I 0.01 iF

ROJC = 1°C/W

0

1.0

125°C

-NO SNUB~ER

\

0

0.1
PW, PULSE WIDTH Ims)

Vlpk) = 700 V, VGR = 12 V,
LG = 2/LH,RG = 3.0
PW 100 /'S, D < 2%

10

'\.

~ 60
co

t, _ _
E_
VF ITM

Figure 4.49(cl. Conduction Energy Per Pulse

\.

BO

V.#.NU:
< tw >

L-TJ~=~12~50C~_...-..J....L.ll.LIL~-.1.....l...I1J..LlIJ..L.1.'HJ.U>...---3L...
'\JJ -,--I'Io..ueJ

1.0
0.001

20
100

X'b"\

mAcoj,tinuolus~

1
125

50

Figure 4.49(dl. MGT01000,M Turn-Off Energy
(Inductive Loadl

Figure 4.49(al. Average Power Derating

'" . .

""

.

MOTOROLA THYRISTOR DEVICE DATA
1-4-27

100

•

V(pk) = 1100 V. VGR = 12 V.
LG = 2 JLH. RG = 30
fW = 100 JLS. D < 2%

~ ~TJ

..-

~~

125°C

0.1 pI0.068 pI-

..-

"x.

"..-

C

0.0) JLF
0.005/LF

W

~V

IX

V ~ ~v.

•

0.05 JLF0.022 JLF

NO SNUBBER

3

10
IT. PEAK ANODE CURRENT (AMPS)

3

100

50

!;;1

~
ffi
~ Q

«w
:;;~
~~

50

100

Figure 4.49(fl. MGT01400.M Turn-Off Energy
(Inductive Loadl

Figure 4.49(el. MGT01200,M Turn-Off Energy
(Inductive Loadl

1.0
0.7
0.5

10
IT. PEAK ANODE CURRENT (AMPS)

.-

0.3

1--- ......

0.2

V

0.1
:: ۤ 0.07

Z8JC(t) - R8JC • r(t)

~ ~0.05

I
~

./

0.03
0.02
0.01
0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20 30
t, TIME (ms)

50

100

200 300

Figure 4.49(gl. Thermal Response

MOTOROLA THYRISTOR DEVICE DATA
1-4-28

500

1.0 k

2.0 k 3.0 k 5.0 k

10 k

POTENTIAL CIRCUIT APPLICATIONS
FOR GTO DEVICES
Optimum GTO characteristics vary with the generic application and specific circumstances of usage. Consult the
factory regarding your specific needs.

HIGH FREQUENCY
ae IN

1

Y

•

HIGH FREQUENCY
aeOUT
SNUBBER

1

Figure 4.50. GTO dv/dt(c) Permits Solid State
Switching At High Frequencies
+S
-P

..."'t..

I

de POWER

RESET
AND
SNUB

I

I

I

I

-P

I
I

I
SENSE

l
J

V
SENSE

J-~ ,

I

1

-S

Figure 4_51. dc Circuit Breaker with OVP Crowbar

ae
POWER

Figure 4.52. GTO ac Circuit Breaker

"

~

'~.'

'.w

;. ..

:3,

.,;/

MOTOROLA THYRISTOR DEVICE DATA
1-4-29

lOAD

I

r-

~~

~

vaett

ae LOAD

~
de LOAD

•

LS
~

.

r-

""

~

1

~r-

Figure 4.53. PWM Chopper for ae or de Load, Snubber
with di/dt Limiting Inductor
+Q-----~--------~------~-------,

SPEED
CONTROL

Figure 4.54. de Motor Control

310 o---I-----t

Figure 4.55. Variable Speed Reversible
de Motor Control

MOTOROLA THYRISTOR DEVICE DATA
1-4-30

r

-PoLEl-r-l

I

~.

~

~

~ LS

RS

I

~~

I

I
I
I

DS1 ~

I P~LEI J II

3¢

POLE
3
~I"

~~

~~

I
I
I

)

DS2

'/

LL
.....

...

~I"

~

I

I

Cs

I
I

"

1

I

I

II _

r' Co

~

/

~I"

I

I
I

I
I
I
I
L ______ -.J
Figure 4.56. GTO Inverter for VWF Induction Motor
Control or CVCF Service with Turn-On/Off Snubber
and Voltage Clamping
Vin

+Q---..--.----,

RECTIFIED
LINE

+

j
Figure 4.57. GTO Flyback Converter with
Non-Dissipative LC Snubber
Vin

+---+-----------------,

Figure 4.58. Half Bridge Converter

MOTOROLA THYRISTOR DEVICE DATA
1-4-31

LOAD

•

-

a

Vin

+o--_~

Figure 4.59. Push-Pull Converter

Vin + 0 - -......- - - -......- - - - - - - - - ,

Figure 4.60. Full Bridge Converter

,
>--~

""

*

~

Figure 4.61. Series Resonant Power Supply Provides
High Efficiency and Reduced RFI

.~

>

.

~~'

.... "

.~~.~:

MOTOROLA THYRISTOR DEVICE DATA
1-4-32

.;.;:
~

;

.

*".:

Figure 4.62. PWM Softstart for Capacitor Input Filter
Reduces Rectifier Start-Up Stress and Line Surge

Figure 4.63. Double Edged Chopper Incandescent Lamp
Dimmer Features Improved Line Regulation

Figure 4.64. Three Phase PWM Rectifier Reduces Filter
Size and Improves Input Power Factor

,
. ,/.

,,'

"

" :;'

,':;-

MOTOROLA THYRISTOR DEVICE DATA
1-4-33

•

+0---"""""'\ r - - - - H V

12 V

•

Figure 4.65. GTO Ignition System with Inductive
Energy Storage

Figure 4.66. High Power, High Frequency Strobe Light

+

Figure 4.67. GTO Radar Modulator Provides High
Operating Voltage, Repetition Frequency,
and Turn-Off Confidence.

",.

,~t

..

;;~.

,"

.

,'

}

~;

~ ",

.....

..'"

~ ..'\::

:.

...,.~.

~

.~

...

~. j$;'~

:

~.

,"

"

..

MOTOROLA THYRISTOR DEVICE DATA
1-4-34

:

;~ .. ~'

.

~ .• .f,

,{ .,"

CHAPTER 5
SCR CHARACTERISTICS

•

ANODE

SCR TURN-OFF CHARACTERISTICS
In addition to their traditional role of power control
devices, SCRs are being used in a wide variety of other
applications in which the SCR's turn-off characteristics
are important. As an example - reliable high frequency
inverters and converter designs «20 kHz) require a
known and controlled circuit-com mutated turn-off time
(t q ). Unfortunately, it is usually difficult to find the turnoff time of a particular SCR for a given set of circuit
conditions.
This section discusses tq in general and describes a
circuit capable of measuring t q . Moreover, it provides
data and curves that illustrate the effect on tq when other
parameters are varied, to optimize circuit performance.

ANODE

GATE

~

J1
N
GATE

J2
J3
N

CATHODE
CATHODE
P·N·P·N STRUCTURE

SCR TURN-OFF MECHANISM

ANODE

The SCR, being a four layer device (P-N-P-N), is represented by the two interconnected transistors, as shown
in Figure 5.1. This regenerative configuration allows the
device to turn on and remain on when the gate trigger
is removed, as long as the loop gain criteria is satisfied;
i.e., when the sum of the common base current gains (a)
of both the equivalent NPN transistor and PNP transistor,
exceed one. To turn off the SCR, the loop gain must be
brought below unity, whereby the on-state principal current (anode current iT) limited by the external circuit
impedance, is reduced below the holding current OH).
For ac line applications, this occurs automatically during
the negative going portion of the waveform. However,
for dc applications (inverters, as an example), the anode
current must be interrupted or diverted; (diversion of the
anode current is the technique used in the tq test fixture
described later in this application note).

ANODE

ITM

+
01

+

161 = IC2

+

IC1 = 162

02
GATE

CATHODE

CATHODE

lWO TRANSISTOR MODEL

Figure 5.1. Two Transistor Analogy of an SCR

SCR TURN-OFF TIME tq
Once the anode current in the SCR ceases, a period of
time must elapse before the SCR can again block a forward voltage. This period is the SCR's turn-off time, t q ,
and is dependent on temperature, forward current, and
other parameters. The turn-off time phenomenon can be
understood by considering the three junctions that make
up the SCR. When the SCR is in the conducting state,
each of the three junctions is forward biased and the N
. ~,

.~

and P regions (base regions) on either side of J2 are
heavily saturated with holes and electrons (stored
charge). In order to turn off the SCR in a minimum
amount of time, it is necessary to apply a negative (reverse) voltage to the device anode, causing the holes and
electrons near the two end junctions, Jl and J3, to diffuse
to these junctions. This causes a reverse current to flow
through the SCR. When the holes and electrons near junc-

".

MOTOROLA THYRISTOR DEVICE DATA
1-5-1

•

tions J1 and J3 have been removed, the reverse current
will cease and junctions J1 and J3 will assume a blocking
state. However, this does not complete the recovery of
the SCR since a high concentration of holes and electrons
still exist near the center junction, J2. This concentration
decreases by the recombination process and is largely
independent of the external circuit. When the hole and
electron concentration near junction J2 has reached
some low value, junction J2 will assume its blocking condition and a forward voltage can, after this time, be applied without the SCR switching back to the conduction
state.
Itq MEASUREMENT

When measuring SCR turn-off time, t q , it is first necessary to establish a forward current for a period of time
long enough to ensure carrier equilibrium. This must be
specified, since ITM has a strong effect on the turn-off
time of the device. Then, the SCR current is reversed at
a specified dildt rate, usually by shunting the SCR anode
to some negative voltage through an inductor. The SCR
will then display a "reverse recovery current," which is
the charge clearing away from the junctions. A further
waiting time must then elapse while charges recombine,
before a forward voltage can be applied. This forward
voltage is ramped up a specified dv/dt rate. The dv/dt
delay time is reduced until a critical point is reached
where the SCR can no longer block the forward applied
voltage ramp. In effect, the SCR turns on and consequently, the ramp voltage collapses. The elapsed time
between this critical point and the point at which the
forward SCR current passes through zero and starts to
go negative (reverse recovery phase), is the tq of the SCR.
This is illustrated by the waveforms shown in Figure 5.2.

tq GENERAL TEST FIXTURE
The simplified circuit for generating these waveforms
is schematically illustrated in Figure 5.3. This circuit is
implemented with as many as eight transformers including variacs, and in addition to being very bulky, has been
known to be troublesome to operate. However, the configuration is rei event and, in fact, is the basis for the
design, as described in the following paragraphs.

tq TEST FIXTURE BLOCK DIAGRAMS AND
WAVEFORMS
The block diagram of the tq Test Fixture, illustrated in
Figure 5.4, consists of four basic blocks: A Line Synchronized Pulse Generator establishes system timing; a Constant Current Generator (variable in amplitude) powers
the Device Under Test (OUT); a dildt Circuit controls the
rate of change of the SCR turn-off current; and the dv/dt
Circuit reapplies a controlled forward blocking voltage.
Note from the waveforms illustrated that the di/dt circuit,
in parallel with the OUT, diverts the constant current from
the OUT to produce the described anode current ITM.

tq TEST FIXTURE CHARACTERISTICS
The complete schematic of the tq Test Fixture and the
important waveforms are shown in Figures 5.5 and 5.6,
respectively.
One CMOS Hex Gate U1, Motorola type MC14572, is
used as the Line Synchronized Pulse Generator, configured as a wave shaping Schmitt trigger, clocking two
cascaded monostable multivibrators for delay and pulse
width settings (Gates 1C to 1F). The result is a pulse
generated every half cycle whose width and position

di/dt

ITM

50%ITM 50% IRM

lOX

I

I
~

I

I

I
a-trr

I

I" I
VT

I
I

VOX

Iq
dv/dt

I

Figure 5.2. SCR Current and Voltage Waveforms
During Circuit-Commutated Turn-Off

MOTOROLA THYRISTOR DEVICE DATA
1-5-2

~____________IT____~~r)______________________.,~
01

02
dv/dt

di/dt

r;-e---40~UT

•

_--'

V1

Figure 5.3. Simplified tq Test Circuit

(where on the cycle it triggers) are adjustable by means
of potentiometers R2 and R3, respectively. The output
pulse is normally set to straddle the peak of the ac line,
which not only makes the power supplies more efficient,
but also allows a more consistent oscilloscope display.
This pulse shown in waveform A of Figure 5.6 initiates
the tq test, which requires approximately 0.5 ms to assure
the device a complete turn on. A fairly low duty cycle
results, (approximately 5%) which is important in minimizing temperature effects. The repetitive nature of this
test permits easy oscilloscope viewing and allows one to
readily "walk in" the dv/dt ramp. This is accomplished
by adjusting the appropriate potentiometer (R7) which,
every 8.33 ms (every half cycle) will apply the dv/dt ramp
at a controlled time delay.
To generate the appropriate system timing delays, four
RC integrating network/comparators are used, consisting
of op-amps U2, U5 and U6.
Op-amp U2A, along with transistor 02, opto-coupler
U4 and the following transistors 06 and 07, provide the
gate drive pulse to the DUT (see waveforms B, C and D
of Figure 5.6). The resulting gate current pulse is about
50 JLs wide and can be selected, by means of switch S2,
for an IGT of from about 1 mA to 90 mA. Opto-coupler
U4, as well as U1 in the Constant Current Circuit, provide
electrical isolation between the power circuitry and the
low level circuitry.
The Constant Current Circuit consists of an NPN Darlington 03, connected as a constant current source driving a PNP tri-Darlington (Darlington 04, Bipolar 05). By
varying the base voltage of 03 (with Current Control potentiometer R4), the collector current of 03 and thus the
base voltage of 04 will also vary. The PNP output transistor 05 (MJ14003) (rated at 70 A), is also configured as
a constant current source with four, parallel connected
emitter resistors (approximately 0.04 ohms, 200 WI, thus
providing as much as 60 A test current. Very briefly, the
circuit operates as follows: - CMOS Gate 1E is clocked

high, turning on, in order, a) NPN transistor 016, b) PNP
transistor 01, c) optocoupler U3, and d) transistors 03,
04 and 05. The board mounted Current Set potentiometer R5, sets the maximum output current and R4, the
Current Control, is a front panel, multiturn potentiometer.
Time delay forthe di/dt Circuit is derived from cascaded
op-amps U2B and U5 (waveforms F and G of Figure 5.6).
The output gate, in turn, drives NPN transistor 08, fol-

CONSTANT
CURRENT
GENERATOR

01

IT

OUT
LINE SYNC
PULSE
GENERATOR

IGT

~

CIRCUIT

t

I I* I
CIRCUIT

1

CONSTANT
CURRENT

dildt

dv/dt

dv/dt

Figure 5.4. Block Diagram of the tq Test Fixture
and Waveforms
:

.. "

MOTOROLA THYRISTOR DEVICE DATA
1-5-3

I~

I

: :~

•

LINE SYNCHRONtZEO PULSE GENERATOR

+IOV
Ik

IN914

TRIAD
F93X

S
o

10 k

r----;I'I'.

§~II
s::

47k

~VI

~18VO
TVP

1

or
»

1.8 k

1

112 W

IN
914
IN4733
5.1 V, I W

~

<

o/LH (TYPI

I

0.001
"F +IOV

~

MCI458
470

'DIODE REQUIRED WITH LI
01:

MR506 FOR 3 A, HIGH Iq OUTS
MR856 FOR 3 A, LOW tOUTS
(DIODE IF SCALED TO &iT IAI

II:

= 50 mA FOR HIGH Iq OUTS

IT
OUT

;, 150k

Yl..

':'1 50 V (TYPI

1000

RI I k
= I A FOR LOWtq
':'1 50 V (TYPI

()

m

o

~
»

10 k

20 V

(1m

(f)

<3
JJ
o
m

=

820pF

-<

LI:

510 k

CONSTANT
CURRENT
CIRCUIT

O.I~IOO/LF

__
IN;;;/F
10V,IW

-I
I
JJ

10 k

20,000 ! l
"F25V =

JJ

u,

22 k

150

CI
470

R, 50

C,:

DETERMINED BY SPEC dv/dl

~V2'

~12V(TYPI,< ~50V

+IOV
100
3.3 k

MJE
250
QI4

4.7 k

cIIi CIRCUIT
dt

0.02 -r/L F ~

Figure 5.5. tq Test Fixture

10/LF
15 V

lowed by PNP transistor 09, whose output provides the
gate drive for the three parallel connected N-channel
power MOSFET transistors 010-012 (waveform H of Figure 5.6). These three FETs (MTM15N06), are rated at 15
A continuous drain current and 40 A pulsed current and
thus can readily divert the maximum 60 A constant current that the Fixture can generate. The results of this
diversion from the OUT is described by waveforms E, H
and I of Figure 5.6, with the dUdt of ITM dictated by the
series inductance L1. For all subsequent testing, the inductor was a shorting bar, resulting in very little inductance and consequently, the highest dUdt (limited primarily by wiring inductance). When a physical inductor
L1 is used, a clamp diode, scaled to the diverted current,
should be placed across L1 to limit "inductive kicks."
dv/dt CIRCUIT
The last major portion of the Fixture, the dv/dt Circuit,
is variable time delayed by the multi-turn, front panel tq
Time Control potentiometer R7, operating as part of an
integrator on the input of comparator U6. Its output
(waveform J of Figure 5.6) is used to turn-off, in order,
a) normally on NPN transistor 013, b) PNPtransistor 014
and c) N-channel power MOSFET 015 (waveform L of
Figure 5.6). This FET is placed across ramp generating
capacitor C1, and when unclamped (turned off), the capacitor is allowed to charge through resistor R1 to the
supply voltage + V1. Thus, the voltage appearing on the
drain will be an exponentially rising voltage with a dv/dt
dictated by R1, C1, whose position in time can be advanced or delayed. This waveform is then applied
through a blocking diode to the anode of the OUT for the
forward blocking voltage test.
Another blocking diode, 01, also plays an important
role in tq measurements and must be properly selected.
Its purpose is to prevent the X~~~~

MOTOROLA THYRISTOR DEVICE DATA
1-5-6

Table 5.1. Parameters Affecting tq
A

Device

2NS50S
25A
SOD V

s::

0
--l
0

MCR2150
15A

JJ

0
r
:t>

--l . '"

~ '"

0, JJ

.!.J

1k
15 V/f"S
ITM ~ 25A
IRM ~ 14A
di/dt ~ -100 Alf"S
ITM duration ~ 275 f"S
IGT ~ 30mA

RGK ~ 100
dv/dt ~ 2.4 V/f"S
ITM ~ 1 A
IRM ~ 1.SA
di/dt ~ 32 AIf"S

RGK ~ 100
dv/dt ~ 2.4 V/f"S
ITM ~ 2A
IRM ~ 50mA
di/dt ~ 0.5 f"S

RGK ~ 100
dv/dt ~ 2.4 V/f"S
IRM ~ 50mA
di/dt ~ 0.45 AIf"S

100
dv/dt ~ 2.4 V/f"S

RGK ~ 00
dv/dt ~ 2.4 V/f"S

typtq~6Sf"S

tyPlq~42f"S

typtq~45f"S

typtq~49f"S

typtq~60f"S

typtq~64f"S

RGK ~ 1 k
dv/dt ~ 125 V/f"S
ITM ~ 15A
IRM ~ 5.5 A
di/dt ~ 36 AIf"S
ITM duration ~ 275 f"S
IGT ~ 50 mA

RGK ~ 100
IRM ~ 0.2 A
di/dt ~ 0.64 AIf"S
IGT ~ 90mA

RGK ~ 100
ITM ~ 2A
IRM ~ 2.4A
di/dt ~ -40 Alf"S
IGT ~ 90 mA

tyPlq

en--l

2N639S
12A

0

JJ

~

3.15f"S

m
<
0
m
0
~

A

:t>

::~:
rl~

.,
!~

..

MCR20S0
SA

typ tq

~

0.975 f"S

typtq

~

2.31's

RGK

~

RGK ~ 100
dv/dt ~ 2.4 VI f"S
ITM~37A

RGK

typtq~64f"S

typtq

~

100

~

~

RGK

651's

IGT

~

90 mA

tyPlq~6Sf"S

100

ITM~23A

RGK ~ 100
IGT ~ 90 mA
tyPlq

~

3.11's

RGK ~ 00
IGT ~ 90 mA
typ Iq

~

3.13 f"S

IGT

~

tyPlq

90 mA
~

3.13f"S

RGK ~ 100
dv/dl ~ 7 V/f"S
IGT ~ 90mA

IRM ~ SA
dildl ~ 32 Alf"S
IGT ~ 90 mA

typtq

typlq

~

3.3 f"S

~

3.S f"S

RGK ~ 1k
dv/dl ~ 90 VI f"S
IRM ~ 11 A
di/dt ~ -100 Alf"S
ITM duralion ~ 275 f"S
IGT ~ 30mA

RGK ~ 100
dv/dl ~ 2.5 VI f"S
ITM ~ 1 A
IRM ~ 50 mA
dildl ~ -0.5A1l's

RGK ~ 100
dv/dl ~ 2.5 VIf"S
ITM ~ 1 A
IRM ~ 2.7 A
dildl ~ 56 Alf"S

typtq~48f"S

tyPlq~30f"S

tyPlq

RGK ~ 1k
dv/dl ~ 110 V/f"S
ITM ~ SA
IRM ~ 5A
di/dt~ -50Alf"S
ITM duralion ~ 275 f"S
IGT ~ 50mA

RGK ~ 100
ITM ~ 1 A
IRM ~ 50 mA
di/dl ~ -0.7A1f"S

RGK ~ 100
ITM ~ 12A
IRM ~ 0.1 A
di/dl ~ -0.7 Alf"S

ITM~12A

0

G

D

~
dv/dt ~

RGK

tyPlq

~

4.7 f"S

tyPlq

~

2.3f"S

tyPlq

~

~

31 f"S

2.4f"S

RGK ~ 100
dv/dl ~ 2.5 VI f"S
IRM ~ 50 mA
dildl ~ 32 Alf"S
tyP lq

~

32 f"S

RGK ~ 00
IRM ~ 0.1 A
di/dl ~ -0.7A1f"S
tyPlq

~

3.2 f"S

RGK ~ 100
dv!dl ~ 2.5 V/f"S
ITM~ISA
IRM ~ 50 mA

dildt

~

typtq

0.3 AIl'S

~

33f"S

RGK ~ 100
ITM ~ 1 A
IRM ~ 2.SA
di/dl ~ -SOAlf"S
tyPlq

~

3.2 f"S

RGK

~

00

~

2.5 VI f"S
IRM ~ 50mA
dildt ~ 0.35 AIf"S

dv/dt

typ Iq

~

35.5 f"S

RGK ~ 100
IRM ~ 1 A
dildl ~ -0.7 Alf"S
tyPlq

~

3.3f"S

RGK

~

typ lq

IGT

~

tyPlq

IGT

100

~

45 f"S

90 mA
~

RGK

4.7 f"S

~

tyPlq

~

tyPlq

•

90 mA
~

48f"S

100

~

4.S f"S

RGK ~ 100
dv/dl ~ 3.S VIf"S
tyPlq

~

4.9 f"S

•

,§<.'\

f'!

~

~~

Table 5.1. Continued

"

~

c

D

Device

A

CI060
4A

IGT=IrnA
RGK = I k
dv/dt = SV/p.s
ITM = 4A
'RM = 4A
di/dt = so AI p.s
IrM duration = 275 p.s
VOX = 50V

ITM = 2A
'RM = 2.5A
di/dt = -30Alp.s
VOX = 50V

'TM = 6A
IRM = -I Alp.s
di/dt = - I Alp.s
VOX = lSOV

ITM = 6A
IRM = 0.1 A
di/dt = - I Alp.s
VOX=SOV

dv/dt = 1.4 V/p.s
ITM = 2A
IRM = 0.2 A
di/dt = -1.4 Alp.s

-V2=35V
IRM = 0.2 A
di/dt = - 1.4 AII"

'RM = 0.I5A
-V2 = 4V
di/dt = - 1.4 Alp.s

dv/dt = 1.4 V/p.s
IRM = 0.I5A
di/dt = 1.4 Alp.s

IGT = 90mA
dv/dt = 1.4 V/p.s
'RM = 2A
di/dt = -1.4 Alp.s

dv/dt = 28 VI p.s
IRM = 0.I5A
di/dt = - 1.4 A

tyP!q= 28p.s

typtq =25p.s

tyP!q= 2Sp.s

typtq = 2Sp.s

typtq = 2Sp.s

typ!q=27p.s

typtq = 27 p.s

typtq = 27p.s

tyP!q = 271"

typtq = 29p.s

RGK = I k
dv/dt = 40 Vlp.s
ITM = 4A
'RM = 4A
di/dt = SO Alp.s
'TM duration =275 p.s
IGT=ImA
VOX = SOV

RGK = 100
dv/dt = 1.3 V/p.s
'TM = I A
IRM = SOmA
di/dt = - 0.5 AII"
IGT = 90mA
VOX=I50V

RGK = 100
dv/dt = 1.75 VIp.s
'TM = I A
IRM = 50 mA
di/dt = - 0.5 AIp.s
IGT = 90 mA

RGK = 100
dv/dt = 1.75 V/p.s
'RM = SOmA
dildt = -0.5 AII"
IGT = 90 mA

dv/dt = 1.75 VIp.s
RGK = 100
ITM = 6A
'RM = 50 mA
di/dt = - 0.5 AIp.s
IGT = 90mA

RGK = 100
'RM = 50 mA
di/dt = - 0.5 AI p.s
IGT = 90 mA

RGK = 100
IGT = 900 mA

RGK = 00
dv/dt = 1.75 V/p.s
'TM = I A
'RM = SO mA
di/dt = - 0.5 AI p.s
IGT = 90 mA

IGT = 90 mA

tyP!q = 44.8 p.s

tyP!q = 26p.s

tyP!q =' 26.2 p.s

typtq = 27.7 p.s

typ tq = 2B.S p.s

typ!q=30p.s

tyP!q = 32.7 p.s

tyP!q = 37.2p.s

typ!q=41.4",

RGK = I k
dv/dt = ISO V/p.s
ITM = O.BA
'RM = 0.8A
di/dt = 12 Alp.s
VOX = 50V
ITM duration = 275",

dv/dt = 30 VIp.s
ITM = 0.25 A
IRM = 40mA
di/dt = -O.SAlp.s

dv/dt = 30 V/p.s
Ir = 40 rnA
dildt = - O.B AII"

-V2 = 9V
'RM = 20 rnA
di/dt = - 0.4 AIp.s

-V2 = I V
Ir = 40mA
di/dt = - 0.8 AIp.s

dv/dt = 30 Vlp.s
ITM = 1.12 A
IRM = 40 rnA
di/dt = - 0.8 AIp.s

dv/dt = 30 VI",
ITM = 1.12 A
'RM = 40 mA
dildt = -0.8A1p.s
VOX = lOOV

typtq = 14.4 p.s

typ!q=I2.7p.s

typtq = 13.5 p.s

tyP!q = 13.71"

typtq =I3.9",

tyP!q = 14.4",

tyP!q = 14.4",

RGK = I k
dv/dt = 30 VI p.s
ITM = 0.8 A
'RM = 0.8 A
di/dt = 12 AI",
'TM duration = 275 p.s
VOX = SOV

dv/dt = 5 VI",
ITM = 0.2 A
IRM = SOmA
di/dt = - O.S AI p.s

dv/dt = 5 VI",
'RM = 50 mA
di/dt = - 0.8 AIp.s

dv/dt = 5 VI",
ITM = 1.12 A
'RM = 50 mA
di/dt = - 0.8 AIp.s

IRM = 40 mA
IRM = 40 mA
-V2 = 9 V
-V2 = I V
di/dt = - 0.45 AI p.s di/dt = - 0.8 AIp.s

VOX = lOOV
dv/dt = 5 V/p.s
'TM = I.I2A
'RM = 50 mA
di/dt = - 0.8 A

tyP!q = 28.9 p.s

typ tq = 27/p.s

tyP!q = 30/p.s

typtq = 31 '"

tyP!q = 31.2",

tyP!q = 31.4",

tyP!q = 31.71"

dv/dt = 10 V/p.s
'TM = 0.8 A
IRM = O.BA
di/dt = IB Alp.s
'TM duration = 275 p.s
RGK = I k
VOX = 30V

dv/dt = 3.5 V/p.s
'TM = 0.25 A
IRM = 40mA
di/dt = -0.7 Alp.s

dv/dt = -3.5 VI",
IRM = 40 mA
di/dt = - 0.8 AI",

dv/dt = 3.5 V/p.s
ITM=1.12A
'RM = 40mA
di/dt = - O.B AI p.s
VOX = SOV

dv/dt = 3.58/p.s
ITM = U2A
IRM = 40 mA
di/dt = -0.7 AI",

-V2 = 4V
'RM = 20mA
di/dt = - 0.2 AI",

-V2 = I V
IRM = 40mA
di/dt = - 0.8 AII"

typtq = 31.7 '"

tyP!q = 19.1",

typtq = 19/",

typ tq = 19.81"

tyP!q = 20.2 p.s

tyP!q= 30p.s

typtq = 30.2",

hit;,
'4'

;>¥'
~~

~

,"iiI'

G

-'j.

y~

s::f(;Z

2N624O
4A

~ ;l~

oJJ '"
0

r

»

-I
I

..... -<

MCRllJO.6
8A

cJ, JJ

cO

C/)

-I

0

JJ

0

m
<
()
om

,',,<,

2N5063
BA

):>

(¥
'-I '"

»

,,"~

2N5061
BA

I

I

shows what happens to the tq of the different devices
when a parameter is varied in one direction or the other.
There are also several curves (Figures 5.8, 5.9 and 5.10)
which indicate what happens to tq when other influential
parameters are varied.

Parameter Changed
IGT Increase

Device
2N6508
MCR2150
2N6398
MCR2080
2N6240
C106D

1st
Columns (!£s)
- A I - - 68
AF
3.15
48
AG
AG
4.7
AI
44.8
27
HI

68
3.13
48
4.7
41.4
27

Decrease RGK
1 k to 100 ohms

2N6508
MCR2150
2N6398
MCR2080
2N6240

AH
DF
AG
AH
GI

68
3.13
48
4.7
41.4

65
3.1
45
4.8
32.7

Increase RGK
1 k to co

2N6508
MCR2150
2N6398
MCR2080
2N6240

EF
DE
DF
DF
CH

60
3.1
32
3.3
26.2

64

VDX

C106D
2N6240
MCR100-6
2N5063
2N5061

DC
BC
FG
DG
DE

26
26.2
14.4
31
20.2

26
26
14.4
31.7
19.8

Decrease dv/dt Rate

2N6508
MCR2150
MCR2080
C106D
2N6240

EH
DG
HI
HJ
DF

65
3.1
4.8
29
30

60
3.3
4.9
27
27.7

Increase ITM

2N6508
MCR2150
2N6398
MCR2080
C106D
2N6240

EG
AH
DE
BC
EH
DC
DE
CE
CF
CD
BE

60
3.15
.32
2.3
26
26.2
27.7
26.2
13.5
30.7
19.1

64
3.8
33
2.4
27
27.7
28.6
28.6
14.4
31
20.7

THE EFFECTS OF CHANGING PARAMETERS
ONtq
From Tables 5.1 and 5.11, it is clear that some parameters
affect tq more than others. The following discussion describes the effect on tq of the various parameters.
FORWARD CURRENT MAGNITUDE (lTM)
Of the parameters that were investigated, forwardcurrent magnitude and the di/dt rate have the strongest
effect on t q . Varying the ITM magnitude over a realistic
range of ITM conditions can change the measured tq by
about 30%. The change in tq is attributed to varying current densities (stored charge) present in the SeR's junctions as the ITM magnitude is changed. Thus, if a large
SeR must have a short tq when a low ITM is present, a
large gate trigger pulse (lGT magnitude) would be advantageous. This turns on a large portion of the SCR to
minimize the high current densities that exists if only a
small portion of the SeR were turned on (by a weak gate
pulse) and the low ITM did not fully extend the turned
on region.
In general, the SeR will exhibit longer tq times with
increasing ITM' as shown in the curves of Figures 5.8 and
5.9. Increasing temperature also increases the tq time
(Figure 5.9).
di/dt RATE
Varying the turn-off rate of change of anode current
di/dt does have some effect on the tq of SCRs, as shown
in Figure 5.10. Although the increase in tq versus increasing di/dt was nominal for the SeRs illustrated, the percentage change for the fast SeRs was fairly high (about

MCR 100-6
2N5063
2N5061

Gate Bias
Device

2N6508

Conditions
-5 V

- V2

+V,

= - 10 V, IF = 3 A

t q1

t q2

Diode
01

40!£s

30 !£S

Slow
MR502

2.5

dv/dt
(V/p$)

50V

I

I

RI
1 kl50

I

dv/dt (vips)

I

2.5/50

Remarks
Slow diode faster than fast diode, (lower t q )

2N6240

16 !£S

9 !£S

Slow

2.5

Slow diode faster. 2.5 V/!£S faster than 50 V/!£S

2N6398

30 !£S

25!£s

Slow

2.5

Tested slow diode only

C106D

13 !£S

8!£s

Slow

2.5

Tested slow diode only

50

2.5 V/!£S does not t q . Both diodes work.

50

50 V/!£s & fast diode only work. -V2 .. -8 V.

MCR2150

4!£S

3.7 !£S

Fast
MR856

MCR2080

2.5!£s

2.3 !£S

Fast

3.13
35.5
2.5
37.2

Table 5.11. The Effects of Changing Parameters on

30-40%).

OV

2nd

(!£S)

Table 5.111. The Effects of Gate Bias on tq

MOTOROLA THYRISTOR DEVICE DATA
1-5-9

tq

•

25

3.5
dildt
Cl06
MCR100
dvldt
RGK
TA

20

!w

:;
;::: 15
""-

<;>
z

- - MCR2150
- - - MCR20BO

2.5

w

:;
;:::

q

TMOS SCR

I-

z

0::

.Sr

•

dildt = 10 Ali'S
dvldt = 50 VIJLs
VDX = 400 V

5A1JLs
2 Ali'S
45 VIi'S
100 n
25°C

"-

10

0::

:::>

:
:
:
:
:

:::>

MCR1000

I0

w

1.5 •

~
:;

0

0::

1

10
ITM, ANODE CURRENT IAMPSI

50 ~

20

.Sr

Figure 5.S. Standard SCR 8r. TMOS SCR Turn-Off Time
tq as a Function of Anode Current ITM

0.5

O+----r-----r-----.------r------~

1

REVERSE CURRENT MAGNITUDE fiRM)
The reverse current is actually due to the stored charge
clearing out of the SCR's junctions when a negative voltage is applied to the SCR anode. IRM is very closely
related to the di-ldt rate; an increasing di/dt rate causing
an increase of IRM and a decreasing di/dt rate causing a
lower IRM.
By using different series inductors and changing the
negative anode turn-off voltage, it is possible to keep the
di/dt rate constant while changing IRM. It was found that
IRM has little or no effect on tq when it is the only variable
changed (see Table 5.1 C106D, Columns F and G, for
example).
REVERSE ANODE VOLTAGE IVRM)
Reverse anode voltage has a strong effect on the IRM

10

Figure 5.9. Normalized Turn-Off Time tq as a Function
of Anode Current ITM for Fast SCRs. Case
Temperature TC at 25·C 8r. 100·C

magnitude and the di/dt rate, but when VRM alone is
varied, with IRM and di/dt held constant, little or no
change in tq time was noticed. VRM must always be
within the reverse voltage of the device.
REAPPLIED dv/dt RATE
Varying the reapplied dv/dt rate across the range of
dv/dt's commonly encountered can vary the tq of a given
SCR by more than 10.0%. The effect of the dv/dt rate on
tq is due to the Anode-Gate capacitance. The dv/dt ap-

lOr---------------------------------------------,

__-.-,-;~.-----e-.

~--------~T~M~O~S;,S~~~----------P-&(!F"

MCR1000

dWdt
MCR1000 : 5V/i'S

mM

MCR2OBO:
MCR2150 :
RGK :
TA :

4A
4A

12VIJLs
12 VIi'S
100 n
25°C

2A

MCR2OBO
fAST SCRs
MCR2150

0r-------r-------.-----r----.-----,-~

1

20

ITM, ANODE CURRENT AMPS

5
10
di/dt, ANODE CURRENT RATE OF CHANGE IAI i'S1

20

Figure 5.10. Turn-Off Time tq as a Function of Anode
Current Rate of Change di/dt

MOTOROLA THYRISTOR DEVICE DATA
1-5-10

50

50

plied at the SCR anode injects current into the gate
through this capacitance (iGT = C dv/dt). As the dv/dt
rate increased, the gate current also increases and can
trigger the SCR on. To complicate matters, this injected
current also adds to the current due to leakage or stored
charge left in the junctions just after turn-off.
The stored charge remaining in the center junction is
the main reason for long tq times and, for the most part,
the charge is removed by the recombination process. If
the reapplied dv/dt rate is high, more charge is injected
into this junction and prevents it from returning to the
blocking state, as soon as if it were a slow dv/dt rate. The
higher the dv/dt rate, the longer the tq times will be.
MAGNITUDE LIMIT OF REAPPLIED dv/dt (VOX)
Changing the magnitude limit of the reapplied dv/dt
voltage has little or no effect on a given SCR's tq time
when the maximum applied voltage is well below the
voltage breakdown of the SCR. The tq times will lengthen
ifthe SCR is being used near its voltage breakdown, since
the leakage present near breakdown is higher than at
lower voltage levels. The leakage will lengthen the time
it takes for the charge to be swept out of the SCR's center
junction, thus lengthening the time it takes for this junction to return to the blocking state.
GATE CATHODE RESISTANCE (RGK)
In general, the lower the RGK is, the shorter the tq time
will be for a given SCR. This is because low RGK aids in
the removal of stored charge in the SCR's junctions. An
approximate 15% change in the tq time is seen by changing RGK from 100 ohms to 1000 ohms for the OUTs.
GATE DRIVE MAGNITUDE (lGT)
Changing the gate drive magnitude has little effect on
a SCR's tq time unless it is grossly overdriven or underdriven. When it is overdriven, there is an unnecessary
large amount of charge in the SCR's junction. When
underdriven, it is possible that only a small portion of the
chip at the gate region turns on. If the anode current is
not large enough to spread the small turned on region,
there is a high current and charge density in this region
that consequently lengthens the tq time.
FORWARD CURRENT DURATION
Forward current duration had no measurable effect on
tq time when varied from 100 ps to 300 ps, which were
the limits of the Motorola tq Tester. Longer ITM durations
heat up the SCR which causes temperature effects; very
short ITM durations affect the tq time due to the lack of
time for the charges in the SCR's junctions to reach equilibrium, but these effects were not seen in the range
tested.

REVERSE GATE BIAS VOLTAGE
As in transistor operation, reverse biasing the gate of
the SCR decreases the turn-off time, due to the rapid
"sweeping out" of the stored charge. The reduction in tq
for standard SCRs is quite pronounced, approaching perhaps 50% in some cases; for fast SCRs, only nominal
improvement might result. Table 5.111 shows this effect
on six SCRs where the gate bias was set for 0 V and - 5
V, respectively (the 1 k gate resistor of the OUT was either
grounded or returned to - 5 V). Due to the internal, monolithic resistor of most SCRs, the actual reverse bias voltage between the gate-cathode is less than the reverse
bias supply.

CHARACTERIZING SCRs FOR CROWBAR
APPLICATIONS

1-5-11

h

;f~;'

The use of a crowbar to protect sensitive loads from
power supply overvoltage is quite common and, at the
first glance, the design of these crowbars seems like a
straightfoward, relatively simple task. The crowbar SCR
is selected so as to handle the overvoltage condition and
a fuse is chosen at 125 to 250% of the supply's rated fullload line current. However, upon further investigation,
other questions and problems are encountered.
How much overvoltage and for how long (energy) can
the load take this overvoltage? Will the crowbar respond
too slowly and thus not protect the load or too fast resulting in false, nuisance triggering? How much energy
can the crowbar thyristor (SCR) take and will it survive
until the fuse opens or the circuit breaker opens? How
fast will the fuse open, and at what energy level? Can the
fuse adequately differentiate between normal current levels - including surge currents - and crowbar short circuit conditions?
It is the attempt of this section to answer these questions - to characterize the load, crowbar, and fuse and
thus to match their characteristics to each other.
The type of regulator of most concern is the low voltage, series pass regulator where the filter capacitors to
be crowbarred, due to 60 Hz operation, are relatively large
and the charge and energy stored correspondingly large.
On the other hand, switching regulators operating at
about 20 kHz require smaller capacitors and thus have
lower crowbar constraints.
These regulators are quite often line-operated using a
high voltage, two-transistor inverter, half bridge or full
bridge, driving an output step-down transformer. If a
transistor were to fail, the regulator-transformed power
would be less and the output voltage would drop, not
rise, as is the case for the linear series regulator with a

MOTOROLA THYRISTOR DEVICE DATA

•

•

shorted pass transistor. Thus, the need for overvoltage
protection of these types of switching regulators is
minimized.
This premise, however, does not consider the case of
the lower power series switching regulator where a
shorted transistor would cause the outpufvoltage to rise.
Nor does it take into account overvoltage due to transients on the output bus or accidental power supply
hookup. For these types of operations, the crowbar SCR
should be considered.

20

1---t-+-t-+-H-fttt-+-t--tT~ ~ ~~o~,IDUyYtYC~E ~ 11~}.1

-

~

r---T""T-rT'TTrnr-----rr---.--rITT
ITIlIIIIrr-T
1....--r-rIT'T
1'TIITTl
Vcc

18

I I I I Ir

'5V
~ 16 f-f-+-++++++tt~
..... d--t-l-4=IoIIttt-·· IPULSE WIDTH I
w

~

~~~~++~~~r"~~++H+-+~~+4++~

~

14~~~~++~~~-,r+~~~~~r+44~

~

=>

'"

~ 12~~~~44+H+-+-~~~~+-+-~"-P~H+~

HOW MUCH OVERVOLTAGE CAN THE
LOAD TAKE?
Crowbar protection is most often needed when ICs are
used, particularly those requiring a critical supply voltage
such as TTL or expensive LSI memories and MPUs.
If the load is 5 V TTL, the maximum specified continuous voltage is 7 V. (CMOS, with its wide power supply
range of 3 to 18 V, is quite immune to most overvoltage
conditions.) But, can the TTL sustain 8 V or 10 V or 15 V
and, if so, for how long and for how many power cycles?
Safe Operating Area (SOA) of the TTL must be known.
Unfortunately, this information is not readily available
and has to be generated.
Using the test circuit illustrated in Appendix III, a quasiSOA curve for a typical TIL gate was generated (Figure

PULSE WIDTH (msl

Figure 5.11. Pulsed Supply Voltage versus Pulse Width

5.11). Knowing this overvoltage-time limit, the crowbar
and fuse energy ratings can be determined.
The two possible configurations are illustrated in Figure 5.12, the first case shows the crowbar SCR across the
input of the regulator and the second, across the output.
For both configurations, the overvoltage comparator senses the load voltage at the remote load terminals, par-

(al. SCR Across Input of Regulator

01

F

.":J"

VO

(bl. SCR Across Output of Regulator

VO

'NEEDED IF SUPPLY NOT CURRENT LIMITED

Figure 5.12. Typical Crowbar Configurations

MOTOROLA THYRISTOR DEVICE DATA
1-5-12

ticularly when the IR drop of the supply leads can be
appreciable. As long as the output voltage is less than
that of the comparator reference, the crowbar SCR will
be in an off state and draw no supply current. When an
over-voltage condition occurs, the comparator will produce a gate trigger to the SCR, firing it, and thus clamping
the regulator input, as in the first case - to the SCRs onstate drop of about 1 to 1.5 V, thereby protecting the load.
Placing the crowbar across the input filter capacitors,
although effectively clamping the output, has several
disadvantages.
1. There is a stress placed on the input rectifiers during
the crowbarring short circuit time before the line fuse
opens, particularly under repeated operation.
2. Under low line conditions, the minimum short circuit current can be of the same magnitude as the maximum primary line current at high line, high load, making
the proper fuse selection a difficult choice.
3. The capacitive energy to be crowbarred (input and
output capacitor through rectifier 01) can be high.
When the SCR crowbar and the fuse are placed in the
dc load circuit, the above problems are minimized. If
crowbarring occurs due to an external transient on the
line and the regulator's current limiting is working properly, the SCR only has to crowbar the generally smaller
output filter capacitor and sustain the limited regulator
current.
If the series pass devices were to fail (short), even with
current limiting or foldback disabled, the crowbarred energy would generally be less than of the previous case.
This is due to the higher impedance of the shorted regulator (due to emitter sharing and current sensing resistors) relative to that of rectifier 01.
Fuse selection is much easier as a fault will now give
a greater percentage increase in dc load current than
when measuring transformer primary or secondary rms
current. The disadvantage, however, of placing the fuse
in the dc load is that there is no protection for the input
rectifier, capacitor, and transformer, if one of these components were to fail (short). Secondly, the one fuse must
protect not only the load and regulator, but also have
adequate clearing time to protect the SCR, a situation
which is not always readily accomplished. The input circuitry can be protected with the addition of a primary
fuse or a ci rcu it breaker.

HOW MUCH ENERGY HAS TO BE
CROWBARRED1
This is dictated by the power supply filter capacitors,
which are a function of output current. A survey of several
linear power supply manufacturers showed the output
filter capacitor size to be from about 100 to 400 microfarads per ampere with about 200 /LF/A being typical. A
30 A regulator might therefore have a 6000 /LF output
filter capacitor.
Additionally, the usually much larger input filter capacitor will have to be dumped if the regulator were to
short, although that energy to be dissipated will be de-

pendent on the total resistance in the circuit between that
capacitor and the SCR crowbar.
The charge to be crowbarred would be
Q = CV = IT,

the energy,
E = 1/2 CV2,
and the peak surge current

i k = Vc
P
RT
When the SCR crowbars the capacitor, the current
waveform will be similar to that of Figure 5.13, with the
peak surge current, ipk, being a function of the total
impedance in the circuit (Figure 5.14) and will thus be
limited by the Equivalent Series Resistance (ESR) and
inductance (ESL) of the capacitor plus the dynamic
impedance of the SCR, any external current limiting resistance, (and inductance) of the interconnecting wires
and circuit board conductors.
The ESR of computer grade capacitors, depending on
the capacitor size and working voltage, might vary from
10 to 1000 milliohms (mO). Those used in this study were
in the 25 to 50 mO range.
The dynamic impedance of the SCR (the slope of the
on-state voltage, on-state current curve), at high currents,
might be in the 10 to 20 mO range. As an example, from
the on-state characteristics of the MCR70, 35 Arms SCR,
the dynamic impedance is

rd

= IlVF =
IlIF

(4.5 - 3.4)V
(300 - 200)A

= ~ ""

11 mO.

100 A

The interconnecting wire might offer an additional
5 mO (#20 solid copper wire"" 20 mO/ft) so that the total
circuit resistance, without additional current limiting,
might be in the 40 to 70 mO range. The circuit inductance
was considered low enough to ignore so far as ipk is
concerned for this exercise, being in hundreds of nanohenry range (ESL"" 3 nH, L wire"" 500 nH/ft). However,
di/dt will be affected by the inductance.

HOW MUCH ENERGY CAN THE CROWBAR SCR
SUSTAIN1
There are several factors which contribute to possible
SCR failures or degradation - the peak surge current,
di/dt, and a measure of the device's energy capability,
12t.
If the peak current and/or duration of the surge is large,
destruction of the device due to excessive dissipation can
occur. Obviously, the ipk can be reduced by inserting
additional impedance in the crowbar path, at an increase
in dump time. However, this time, which is a measure of
how long the overvoltage is present, should be within
the SOA of the load.
The energy stored in the capacitor being a constant for
a particular voltage would suggest that the 12t integral
for any limiting resistance is also a constant. In reality,

MOTOROLA THYRISTOR DEVICE DATA
1-5-13

•

1\
ipk

\

-+--,.

"- ........

•

"-

t = 0.5rnsiDiv

50%

di/dt

-

/

.I

1~-f-r~------------~~-

I
o

t = 10/LSfDiv

I = 200 AlDiv
MCR69
C = 22,000 pi

CROWBAR CURRENT TERMS

RS = 0
Vc = JOV
IGT = 200 rnA

Figure 5.13. Typical SCR Crowbar Waveform

this is not the case as the thermal response of the device
must be taken into consideration. It has been shown that
the dissipation capability of a device varies as to the
\Ii for the first tens of milliseconds of the thermal response and, in effect, the measure of a device's energy
capability would be closer to i 2\1i. This effect is subsequently illustrated in the empirically derived ipk versus
time derating curves being a non-linear function. However, for comparison with fuses, which are rated in 12t,
the linear time base, "t," will be used.
The di/dt of the current surge pulse is also a critical
parameter and should not exceed the device's ratings
(typically about 200 A/p.s for 50 A or less SCRs). The
magnitude of di/dt that the SCR can sustain is controlled
by the device construction and, to some extent, the gate
drive conditions. When the SCR gate region is driven on,
conduction across the junction starts in a small region
and progressively propagates across the total junction.
Anode current will initially be concentrated in this small
conducting area, causing high current densities which
can degrade and ultimately destroy the device. To minimize this di/dt effect, the gate should be turned on hard
and fast such that the area turned on is initially maximized. This can be accomplished with a gate current
pulse approaching five times the maximum specified
continuous gate current, Igt, and with a fast rise time
« 1 p.s). The gate current pulse width should be greater
than the propagation time; a figure of 10 p.s minimum

should satisfy most SCRs with average current ratings
under 50 A or so.
The wiring inductance alone is generally large enough
to limit the di/dt. Since most SCRs are good for over 100
A/p.s, this effect is not too large a problem. However, if
the di/dt is found excessive, it can be reduced by placing
RW

LW

r- ---l
I
I
I
I
I
I

L

ESR

ESL

I
I

I
I
I

I

_ _ -.J

RW, LW: INTERCONNECTING WIRE IMPEDANCE
RS, LS: CURRENT LIMITING IMPEDANCE

II.·

Figure 5.14. Circuit Elements Affecting SCR
Surge Current

1iII:IIIII11111_~D_lBr7F.IIII_I[iIII.i• •
MOTOROLA THYRISTOR DEVICE DATA
1-5-14

WRUIIII ] '_ _ "

Figure 5.15

an inductance in the loop; but, again, this increases the
circuit's response time to an overvoltage and the tradeoff should be considered.
Since many SCR applications are for 60 Hz line operation, the specified peak non-repetitive surge current
ITSM and circuit fusing 12t are based on 112 cycle (8.3 ms)
conditions. For some SCRs. a derating curve based on
up to 60 or 100 cycles of operation is also published. This
rating, however, does not relate to crowbar applications.
To fully evaluate a crowbar system, the SCR must be
characterized with the capacitor dump exponential surge
current pulse.
A simple test circuit for deriving this pulse is shown in
Figure 5.15, whereby a capacitor is charged through a
limiting resistor to the supply voltage, V, and then the
charge is dumped by the SCR device under test (OUT).
The SCR gate pulse can be varied in magnitUde, pulse
width, and rise time to produce the various IGT conditions. An estimate of the crowbar energy capability of
the OUT is determined by first dumping the capacitor
charged to a low voltage and then progressively increasing the voltage until the OUT fails. This is repeated for
several devices to establish an average and minimum
value of the failure points cluster.
This procedure was used to test several different SCRs
of which the following Table 5.IV describes several of the
pertinent energy specifications and also the measured
crowbar surge current at the point of device failure.
This one-shot destruct test was run with a gate current
of five IGT(MAX) and a 22,000 JLF capacitor whose ESR
produced the exponentially decaying current pulse about
1.5 ms wide at its 10% point. Based on an appropriate
derating, ten devices of each line where then successfully
tested under the following conditions.

Device

Vc

ipk

t

MeR68

12 V

250 A

1.5 ms

MeR69

30V

800 A

1.5 ms

MeR70

30V

800 A

1.5 ms

To determine the effect of gate drive on the SCRs, three
devices from each line were characterized at non-destruct
levels using three different capacitors (200, 6,000, and
22,000 JLF), three different capacitor voltages (10, 20, and
30 V), and three different gate drives (lGT(MAX), 5
IGT(MAX), and a ramp IGT(MAX) with a di/dt of about
1 mAlJLS). Due to its energy limitations, the MCR68 was
tested with only 10 V across the larger capacitors.
The slow ramp, IGT' was used to simulate overvoltage
sense applications where the gate trigger rise time can
be slow such as with a coupling zener diode.
No difference in SCR current characteristics were noted
with the different gate current drive conditions; the peak
currents were a function of capacitor voltage and circuit
impedance, the fall times related to RrC, and the rise
times, t r, and di/dt, were more circuit dependent (wiring
inductance) and less device dependent (SCR turn-on
time, ton)' Since the wiring inductance limits, t r• the effect
of various IGTS was masked, resulting in virtually identical waveforms.
The derated surge current, derived from a single (or
low number) pulse test, does not truly reflect what a
power supply crowbar SCR might have to see over the
life of the supply. Life testing over many cycles have to
be performed; thus, the circuit described in Appendix IV
was developed. This life test fixture can simultaneously

Table 5.1V. Specified and Measured Current Characteristics of Three SCRs
Measured Crowbar
Surge Current Ipk

Maximum Specified Values
Device

Case
IT(rms)
(A)

IT(AV)
(A)

ITSM*
(A)

12t
(A2s)

IGT(Max)
(mA)

Min
(A)

Max
(A)

Ave
(A)

MCR68

TO-220

12

8

100

40

30

380

750

480

MeR69

TO-220

25

16

300

375

30

1050

1250

1100

MCR70

TO-208

35

22

350

510

30

1100

1300

1200

*ITSM

= Peak Non-Repetitive Surge Current,

1/2 cycle sine wave, 8.3 ms.

MOTOROLA THYRISTOR DEVICE DATA
1-5-15

•

f--

~

~

...

3000

en
:;;

~

1000

I-

~

.$
a::
a::
=>
u

«
""w

...

C 8400 /LF TA 25°C
Ipk
ESR = 25mO N 2000 PULSES
f 3 PULSES/MIN.
VC"" SOV
MCR71
MCR70

..........
I-

~

a::
~

twt;: 5TC

r-

u

-.....

N = 2000 PULSES
~

r-......

a::

=>


MCRS9
300

r---....

"" O.S

-

!--

100

~
::a
N

::::;

~
a::

0.4

a
z

30

0.2
0.1

10

Q5

tWo BASE PULSE WIDTH

50

o

100

Imsl

25

50
75
TC. AMBIENT TEMPERATURE lOCI

100

125

Figure 5.16(a). Peak Surge Current versus Pulse Width

(b). Peak Surge Current versus Ambient Temperature

test ten SCRs under various crowbar energy and gate
drive conditions.
Each of the illustrated SCRs of Figure 5.16(a) were
tested with as many as four limiting resistors (0, 50,100,
and 240 mO) and run for 1000 cycles at a nominal energy
level. If no failures occurred, the peak current was progressively increased until a failure(s) resulted. Then the
current was reduced by 10% and ten new devices were
tested for 2000 cycles (about six hours at 350 cycles/hour).
Ifthis test proved successful, the data was further derated
by 20% and plotted as shown on log-log paper with a
slope of -1/4. This theoretical slope, due to the 12y't onedimensional heat-flow relationship (see Appendix VI),
closely follows the empirical results. Of particular interest
is that although the peak current increases with decreasing time, as expected, the 12t actually decreases.
Figure 5.16(b) shows the effect· of elevated ambient
temperature on the peak current capability of the illustrated SCRs.

tion of time (Figure 5.11). The crowbar SCR must clamp
the overvoltage within a specified time, and still be within
its own energy rating; thus, the series-limiting resistance,
RS, in the crowbar path must satisfy both the load and
SCR energy limitations. The overvoltage response time
is set by ti'le total limitations. The overvoltage response
time is set by the total limiting resistance and dumped
capacitor(s) time constant. Since the SOA ofthe TTL used
in this exercise was derived by a rectangular overvoltage
pulse (in effect, over-energy), the energy equivalent of
the real-world exponentially falling voltage waveform
must be made. An approximation can be made by using
an equivalent rectangular pulse of 0.7 times the peak
power and 0.7 times the base time.
Once an overvoltage is detected and the crowbar is
enabled, in addition to sustaining the peak current, the
SCR must handle the regulator short-circuit current for
the time it takes to open the fuse.
Thus, all three elements are tied together - the load
can take just so much overvoltage (over-energy) and the
crowbar SCR must repeatedly sustain for the life of the
equipment an rms equivalent current pulse that lasts for
the fuse response time.
It would seem that the matching of the fuse to the SCR
would be straightforward - simply ensure that the fuse
rms current rating never exceed the SCR rms current
rating (Figure 5.17), but still be sufficient to handle steadystate and normal overload currents. The more exact relationship would involve the energy dissipated in the system fl 2Rdt, which on a comparative basis, can be reduced
to 12t. Thus, the "let-through" 12t of the fuse should not
exceed 12t capability of the SCR under all operating conditions. These conditions are many, consisting of "available fault current," power factor of the load, supply voltage, supply frequency, ambient temperature, and various
fuse factors affecting the 12t.
There has been much detailed information published
on fuse characteristics and, rather than repeat the text
which would take many pages, the reader is referred to
those sources. Instead, the fuse basics will be defined

FUSE CHARACTERISTICS
SCRs, like rectifiers, are generally rated in terms of
average forward current, IT(AV), due to their half-wave
operation. Additionally, an rms forward current, IT(rms),
a peak forward'surge current, ITSM, and a circuit-fusing
energy limit, 12t, may be shown. However, these specifications, which are based one-half cycle 60 Hz operation,
are not related to the crowbar current pulse and some
means must be established to define their relationship.
Also, fuses which must ultimately match the SCR and the
load, are rated in rms currents.
The crowbar energy curves are based on an exponentially decaying surge current waveform. This can be converted* to Irms by the equation.
Irms = 0.316 ipk
which now allows relating the SCR to the fuse.
The logic load has its own overvoltage SOA as a func*See Appendix V

MOTOROLA THYRISTOR DEVICE DATA
1-5-16

and an example of matching the fuse to the SCR will be
shown.
In addition to interrupting high current, the fuse should
limit the current, thermal energy, and overvoltage due to
the high current. Figure 5.18 illustrates the condition of
the fuse at the moment the over-current starts. The peak
let-through current can be assumed triangular in shape
for a first-order approximation, lasting for the clearing
time of the fuse. This time consists of the melting or prearcing time and the arcing time. The melting time is an
inverse function of over-current and, at the time that the
fuse element is opened, an arc will be formed causing
the peak arc voltage. This arc voltage is both fuse and
circuit dependent and under certain conditions can exceed the peak line voltage, a condition the user should
ensure does not overstress the electronics.
The available short-circuit current is the maximum current the circuit is capable of delivering and is generally
limited by the input transformer copper loss and reactance when the crowbar SCR is placed at the input to the
regulator or the regulator current limiting when placed
at the output. For a fuse to safely protect the circuit, it
should limit the peak let-through current and clear the
fault in a short time, usually less than 10 ms.
Fuse manufacturers publish several curves for characterizing their products. The current-time plot, which
describes current versus melting time (minimum time
being 10 ms), is used in general industrial applications,
but is not adequate for protecting semiconductors where
the clearing time must be in the subcycle range. Where
protection is required for normal multicycle overloads,
this curve is useful.
Two other useful curves, the total clearing 12t characteristic and the peak let-through current IpLT characteristic, are illustrated in Figures 5.19 and 5.20 respectively.
Some vendors also show total clearing time curves (overlayed on Figure 5.19 as dotted lines) which then allows
direct comparison with the SCR energy limits. When this
clearing time information is not shown, then the designer
should determine the IpLT and 12t from the respective
curves and then solve for the clearing time from the approximate equation relating these two parameters. As-

I...
: "

.......

~ SCR CHARACTERISTICS

I
I

I
I
I

.........

.......

..........

,

......

Irmslmax)

T~~~~~---------r10ms

4 HRS
TIME t (LOG)

Figure 5.17. Time-Current Characteristic Curves
of a Crowbar SCR and a Fuse
~

( ; : ' Me ""-rAGE

RJSE '0"'"
SUPPLY
VOLTAGE--;0.
INSTANT OF SHORT

f\ f\

I

V\J

H

MELTING TIME
ARCING TIME
CLEARING TIME
PEAK ASYMMETRICAL
FAULT CURRENT

FUSE CURRENT
PEAK FUSE CURRENT

IPLT

-=......'<:::>4~I-+-+~t--l/-\--r-

Figure 5.18. Typical Fuse Timing Waveforms During
Short Circuit
suming a triangular waveform for IpLT, the total clearing
time, t c, would then approximately be
31 2t

tc = IPLT2
Once tc of the fuse is known, the comparison with the
SCR can readily be made. As long as the 12t of the fuse
is less than the 12t of the SCR, the SCR is protected. It
should be pointed out that these calculations are predicated on a known value of available fault current. By
inspection of Figure 5.20, it can be seen that IpLT can
vary greatly with available fault current, which could have
a marked effect on the degree of protection. Also, the
illustrated curves are for particular operating conditions;
the curves will vary somewhat with applied voltage and
frequency, initial loading, load powerfactor, and ambient
temperature. Therefore, the reader is referred to the manufacturer's data sheet in those cases where extrapolation
will be required for other operating conditions. The final
proof is obtained by testing the fuse in the actual circuit
under worst-case conditions.

CROWBAR EXAMPLE
To illustrate the proper matching of the crowbar SCR
to the load and the fuse, consider the following example.
A 50 A TTL load, powered by a 60 A current limited series
regulator, has to be protected from transients on the supply bus by crowbarring the regulator output. The output
filter capacitor of 10,000 /LF (200 /LF/A) contributes most
of the energy to be crowbarred (the input capacitor is
current limited by the regulator). The transients can reach
18 V for periods of 100 ms.
Referring to Figure 5.11, it is seen that this transient
exceeds the empirically derived SOA. To ensure safe operation, the overvoltage transient must be crowbarred
within 5 ms. Since the TTL SOA is based on a rectangular
power pulse even though plotted in terms of voltage, the
equivalent crowbarred energy pulse should also be derived. Thus, the exponentially decaying voltage waveform should be multiplied by the exponentially decaying
current to result in an energy waveform proportional to

~.'

:fL.;. :;; ~:" t

:'".

'-

'.;:

"".

MOTOROLA THYRISTOR DEVICE DATA
1-5-17

-

--

--"-"""

-~~~~

•

r- SF 13X SERIES
r- 130 Vrms. 60 Hz
TA = 25°C
POWER FACTOR .. 15%

102

--

~

<§:

:<:

::>

0

I

/

lOA

/

a:

•

15A

J

CJ

20A

/

~

+-

~ 10
4

~'

rTi

1
10

2is 1(5ij

I WlAL CLrRlrGI T\~EI

103

104

4

AVAILABLE FAULT CURRENT (SYMMETRiCAl rms AMPS!

Figure 5.19. Maximum Clearing 12t Characteristics
for 10 to 20 A Fuses
e- 2x. The rectangular equivalent will have to be determined and then compared with the TTL SOA. However.
for simplicity, by using the crowbarred exponential waveform, a conservative rating will result.
To protect the SCR, a fuse must be chosen that will
open before the SCR's 12t is exceeded, the current being
the regulator limiting current which will also be the available fault current to the fuse.
The fuse could be eliminated by using a 60 A SCR, but
the cost versus convenience trade-off of not replacing the
fuse is not warranted for this example. A second fuse or
circuit breaker will protect the rectifiers and regulator for
internal faults (shorts), but its selection, which is based

on the respective energy limits of those components, is
not part of this exercise.
If a crowbar discharge time of 3 ms were chosen, it
would not only be within the rectangular pulsed SOA,
but also be well within the derived equivalent rectangular
model ofthe exponential waveform. It would also require
about 1.3 time constants for the overvoltage to decay
from 18 V to 5 V; thus, the RC time constant would be 3
ms/1.3 or 2.3 ms.
The limiting resistance, RS would simply be

2.3 ms
RS = 10,000 /LF = 0.23

n '" 0.2 n

20lA
MAX PEAK AVAILABLE CURRENT
(2.35 x SYMMETRICAL rms AMPERES!

_\

~

-;::; _I-"
~

.......
...Ie:

_....
....

-

15A

lOA

/
SF 13X SERIES
130 Vrms, 60 Hz

r?~ER FAfTO~ ~ ~5~l
4
AVAILABLE FAULT CURRENT (SYMMETRICAL rms AMPS!

Figure 5.20. Peak Let-Through Current versus Fault
Current for 10 to 20 A Fuses

. . . .r J l . . . I ' I : ' I I I I D 1 I i. . . . . .
MOTOROLA THYRISTOR DEVICE DATA
1-5-18

Since the capacitor quickly charges up to the overvoltages VCC1 of 18 V, the peak capacitor discharge current would be
I

pk

= VCC1 =
RS

18 V
0.2.n

= 90 A

The rms current equivalent for this exponentially decaying pulse would be
Irms = 0.316 Ipk = 0.316(90) = 28.4 Arms
Now referring to the SCR peak current energy curves
(Figure 5.16), it is seen that the MCR68 can sustain 210
A peak for a base time of 3 ms. This 12 A SCR must also
sustain the 60 A regulator limited current for the time
required to open the fuse. The MCR68 has a specified
peak forward surge current rating of 100 A (1/2 cycle, sine
wave, 60 Hz, non-repetitive) and a circuit fusing rating of
40 A2 s.
The non-repetitive rating implies that the device can
sustian 100 occurrences of this 1/2 cycle surge over the
life of the device; the SCR crowbar surge current curves
were based on 2000 cycles.
For the 3 ms time frame, the 112t1 for the exponential
waveform is
112t1 = (28.4 A)2(3 ms) = 2.4 A2s

The circuit designer can then make the cost/performance trade-offs.
All of these ratings are predicated on the fuse opening
within 6 ms.
With an available fault current of 60 A, Figure 5.19
shows that a 10 A (SF13X series) fuse will have a letthrough 12t of about 10 A2 s and a total clearing time of
about 6 ms, satisfying the SCR requirements, that is,
12t fuse < 12t SCR
tc';; 6 ms
Figure 5.20 illustrates that for the same conditions, instantaneous peak let-through current of about 70 A would
result. For fuse manufacturers that don't show the clearing time information, the approximate time can be calculated from the triangular model, as follows
31 2t
3(10)
tc = IPLT2 = (70)2 = 6.1 ms
The fuse is now matched to the SCR which is matched
to the logic load. Other types of loads can be similarly
matched, if the load energy characteristics are known.

Assuming that the fuse will open within 6 ms, the approximate energy that the SCR must sustain would be
60 A for an additional 3 ms. By superposition, this would
amount to
122t2 = (60 A)2(6 ms) = 21.6 A 2s
which, when added to the exponential energy, would result in 24 A2.
The MCR68 has a 40 A 2s rating based on a 1/2 cycle
of 8.3 ms. Due to the one-dimensional heat flow in the
device, the energy capability is not linearly related to
time, but varies as to the Vi. Therefore, with a 6 ms
1/2-cycle sine wave, the 40 A 2t rating would now decrease to approximately (see Appendix VI for derivation).

Although the 1/2 cycle extrapolated rating is greater than
the actual crowbar energy, it is only characterized for 100
cycles of operation.
To ensure 2000 cycles of operation, at a somewhat
higher cost, the 25 A MCR69 could be chosen. Its exponential peak current capability, at 3 ms, is about 560 A
and has a specified ITSM of 300 A for 8.3 ms. The 12t
rating is not specified, but can be calculated from the
equation
12t = (lTS2M)2 t

= (30~ A)2 (8.3 ms) = 375 A2s

Extrapolating to 6 ms results in about 318 A2s, an 12t
rating much greater than the circuit 24 A 2s value.

CHARACTERIZING SWITCHES AS LINE-TYPE
MODULATORS
In the past, hydrogen thyratrons have been used extensively as discharge switches for line type modulators.
In general, such devices have been highly satisfactory
from an electrical performance standpoint, but they have
some major drawbacks including relatively large size and
weight, low efficiency (due to filament power requirements), and short life expectancy compared with semiconductor devices, now can be eliminated through the
use of silicon controlled rectifiers.
A line type modulator is a modulator whose outputpulse characteristics are determined by a lumpedconstant transmission line (pulse forming network) and
by the proper match of the line impedance (PFN) to the
load impedance.
A switch for this type modulator should only initiate
conduction and should have no effect on pulse characteristics. This is in contrast to a hard switch modulator
where output pulse characteristics are determined by the
"hard" relationship of grid (base) control of conduction
through a vacuum tube (transistor) switch.
Referring to the schematic (Figure 5.27), when the
power supply is first turned on, no charge exists in the
PFN, and energy is transferred from the power supply to
the PFN via the resonant circuit comprising the charging
choke and PFN capacitors. At the time that the voltage
across the PFN capacitors reaches twice the power supply
voltage, current through the charging choke tries to reverse and the power supply is disconnected due to the
back biased impedance of the hold-off diode. If we assume this diode to be perfect, the energy remains stored
in the PFN until the discharge switch is triggered to its
on state. When this occurs, assuming that the pulse transformer has been designed to match the load impedance
to the PFN impedance, all energy stored in the PFN re-

MOTOROLA THYRISTOR DEVICE DATA
1-5-19

•

actance will be transferred to the load if we neglect switch
losses. Upon completion of the transfer of energy the
switch must return to its off condition before allowing
transfer of energy once again from the power supply to
the PFN storage element.

OPTIMUM SWITCH CHARACTERISTICS
FORWARD BREAKOVER VOLTAGE

•

Device manufacturers normally apply the variableamplitude output of a half-wave rectifier across the SCR.
Thus, forward voltage is applied to the device for only a
half cycle and the rated voltage is applied only as an ac
peak. While this produces a satisfactory rating for ac applications, it does not hold for dc.
An estimated 90% of devices tested for minimum
breakover voltage (VBO) in a dc circuit will not meet the
data sheet performance specifications. A switch designed
for the pulse modulator application should therefore
specify a minimum continuous forward breakover voltage at rated maximum leakage current for maximum device temperatures.

THE OFF SWITCH
The maximum forward leakage current ofthe SCR must
be limited to a low value at maximum device temperature. During the period of device nonconduction it is desired that the switch offer an off impedance in the range
of megohms to hundreds of megohms. This is required
for two reasons: (1) to prevent diminishing the efficiency
of recharge by an effective shunt path across the PFN,
and (2) to prevent the bleeding off of PFN charge during
the interpulse period. This second factor is especially important in the design of radar tansponders wherein the
period between interrogations is variable. Change of the
PFN voltage during the interpulse period could result in
frequency shift, pulse instabilities, and loss of powerfrom
the transmitter being modulated.
THE ON SWITCH
At present, SCR design is more limited in the achievable maximum forward sustaining voltage than in the
current that the device will conduct. For this reason modulators utilizing SCRs can be operated at lower impedance levels than comparable thyratron circuits of yesterday. It is not uncommon for the characteristic impedance
of the pulse forming network to be in the order of 5 to
10 ohms or less. Operating the SCR at higher current to
switch the same equivalent pulse power as a thyratron
requires the SCR on impedance to be much lower so that
the 12R loss is a reasonable value, in order to maintain
circuit efficiency. Low switch loss, moreover, is mandatory because internal power dissipation can be directly
translated into junction-temperature-rise and associated
leakage current increase which, if excessive, could result
in thermal runaway.
TURN-ON TIME
In radar circuits the pUlse-power handling capability of
an SCR, rather than the normally specified averagepower capability, is of primary importance.

For short pulses at high PRFs the major portion of semiconductor dissipation occurs during the initial turn-on
during the time that the anode rises from its forward
leakage value to its maximum value. It is necessary,
therefore, that turn-on time be as short as possible to
prevent excessive power dissipation.
The function of radar is to provide distance information
measured as a function oftime. It is important, therefore,
that any delay introduced by a component be fixed in
relation to some variable parameter such as signal
strength or temperature. For radar pulse modulator applications, a minimal delay variation versus temperature
is required and any such variation must be repetitive from
SCR to SCR, in production lots, so that adequate circuit
compensation may be provided.

PULSE GATE CURRENT TO FIRE
The time of delay, the time of rise, and the delay variation versus temperature associated with SCR turn-on
are functions of the gate triggering current available and
the trigger pulse duration. In order to predict pulse circuit
operation of the SCR, the pulse gate current required to
turn the device on when switching the low-impedance
modulator should be specified and the limits of turn-ontime variation for the specified pulse trigger current and
collector load should be given at the high and low operating temperature extremes.
RECOVERY TIME
After the cessation of forward conducting current in
the on device, a time of SCR circuit isolation must be
provided to allow the semiconductor to return to its off
state. Recovery time cannot be given as an independent
parameter of device operation, but must include factors
as determined by the external circuit, such as: (1) pulse
current and rate of decay; (2) availability of an inverse
voltage immediately following pulse-current conduction;
(3) level of base bias following pulse current conduction;
(4) rate of rise of reapplied positive voltage and its amplitude in relation to SCR breakover voltage; and
(5) maximum circuit ambient temperature.
In the reverse direction the controlled rectifier behaves
like a conventional silicon diode. Under worst circuit conditions, if an inverse voltage is generated through the
existence of a load short circuit, the current available will
be limited only by the impedance of the pulse forming
network and SCR inverse characteristics. The reverse current is able to sweep out some of the carriers from the
SCR junctions. Intentional design of the load impedance
to something less than the network impedance allows
development of an inverse voltage across the SCR immediately after pulse conduction, enhancing switch turnoff time. Careful use of a fast clamp diode in series with
a fast zener diode, the two in shunt across the SCR, allows
application of a safe value of circuit-inverse-voltage without preventing the initial useful reverse current. Availability of a negative base-bias following pulse current conduction provides a similar enhancement of switch turnoff time.
If removal of carriers from the SCR junction enables a

MOTOROLA THYRISTOR DEVICE DATA
1-5-20

faster switch recovery time, then, conversely, operation
of the SCR at high temperatures with large forward currents and with slow rate of current decay all increase
device recovery time.
HOLDING CURRENT

One of the anomalies that exist in the design of a pulse
SCR is the requirement for a high holding current. This
need can be determined by examining the isolation component that disconnects the power supply from the discharge circuit during the time that PFN energy is being
transferred to the transmitter and during the recovery
time of the discharge switch. An inductance resonating
with the PFN capacitance at twice the time of recharge
is normally used for power supply isolation. Resonant
charging restricts the initial flow of current from the
power supply, thereby maximizing the time at which
power supply current flow will exceed the holding current
of the SCR. If the PFN recharge current from the power
supply exceeds the holding current of the SCR before it
has recovered, the SCR will again conduct without the
application of a trigger pulse. As a result continuous conduction occurs from the power supply through the low
impedance path of the charging choke and on switch.
This lock-on condition can completely disable the equipment employing the SCR switch.
The charging current passed by the inductance is given
as (the PFN inductance is considered negligible):

ic(t) = Ebb - Vn(O)
\!Lc/Cn

( CoS~)
2vr:;;Cn
.
Tr
Sin 2\!LcCn

IH = VSO-Vn(O) (
\!Lc/Cn

cos

Tr-2(recovery time))
2vr;;cn
.
Tr
Sin 2\!Lc Cn

The designer may find that for the chosen SCR the
desired characteristics of modulator pulse width and
pulse repetition frequency are not obtainable.
One means of increasing the effective holding current
of an SCR is for the semiconductor to exhibit some turnoff gain characteristic for the residual current flow at the
end ofthe modulator pulse. The circuit designer then can
provide turn-off base current, making the SCR more effective as a pulse circuit element.
THE SCR AS A UNIDIRECTIONAL SWITCH

When tirggered to its on state, the SCR, like the hydrogen thyratron, is capable of conducting current in one
direction. A load short circuit could result in an inverse
voltage across the SCR due to the reflection of voltage
from the pulse forming network. The circuit designer may
wish to provide an intentional load-to-PFN mismatch
such that some inverse voltage is generated across the
SCR to enhance its turn-off characteristics. Nevertheless,
since the normal circuit application is unidirectional. the
semiconductor device designer could take advantage of
this fact in restricting the inverse-voltage rating that the
SCR must withstand. The circuit designer, in turn, can
accommodate this lack of peak-inverse-voltage rating by
use of a suitable diode clamp across the PFN or across
the SCR.

A PRACTICAL PULSE MODULATOR SCR

Where
Ebb
Vn(O)

= power supply voltage
= 0 volts if the PFN employs a clamp diode or

Tr

= time of resonant recharge and is usually
1

is matched to the load
equal to PRF

Lc
= value of charging inductance
Cn
= value of total PFN capacity
For a given radar pulse modulator design, the values
of power supply voltage, time of resonant recharge,
charging choke inductance, and PFN capacitance are established. If the time (t) represents the recovery time of
the SCR being used as the discharge switch, ic then represents the minimum value of holding current required
by the SCR to prevent power supply lock-on. Conversely,
if the modulator design is about an existing SCR where
holding current, recovery time, and forward breakover
voltage are known, the charge parameters can be derived
by rewriting the above formula as follows:

Motorola makes several SCRs especially designed as
radar modulators, including the 2N4199, MCR729 and
MCR1718 families.
One actual use of the MCR729 has been in a radar
modulator requiring pulse outputs of 60 and 450 ns at a
peak pulse power of 2700 watts and a PRF of 10,000 pps.
Detected RF pulse rise time, to a large extent dependent
on the SCR rate of current rise, is only 20 ns (Figure 5.21).
A second application (Figure 5.22) uses a single
MCR729 to switch 5000 watts of peak pulse power, with
a circuit recovery time of 45 /LS at an 85°C ambient temperature. Maximum duty cycle of this circuit is 0.0024.
The current and detected RF waveforms were obtained
using an MCR729-9 with this circuit. The current pulse
being switched is 18 amperes. Pulse width is approximately 0.75 /Ls. The rise and fall times of the detected RF
pulse are both less than 50 ns.
Measurements made on the MCR729 prior to circuit
use have shown the switch to be stable, fast, and efficient.
Pulse "on" impedance has consistently measured less
than 0.5 ohm. Delay variation versus temperature is typically ± 20 ns measured from - 55°C to + 105°C. Time of
delay averages about 300 ns.

MOTOROLA THYRISTOR DEVICE DATA
1-5-21

•

"V."

rv

v

TURN-ON TIME, VARIATION AND ON IMPEDANCE
This circuit assumes that the pulse gate curren-t required to switch a given modulator load current is specified by the manufacturer or that the designer is able to
specify the operating conditions. Typical operating values might be:

-

A

•

r'\.., t;-..; _J \
Figure 5.21. Vertical 5 A/cm; Horizontal, 0.2 ,.,s/cm.
Current Pulse Through an MCR729-9, Driving
Magnetron Load

SCRs TESTS FOR PULSE CIRCUIT APPLICATION
The suitability for pulse circuit applications of SCRs not
specifically characterized for such purposes can be determined from measurements carried out with relatively
simple test circuits under controlled conditions. Applicable test circuits and procedures are outlined in the following section.
FORWARD BLOCKING VOLTAGE AND LEAKAGE
CURRENT
Mount the SCRs to a heat sink and connect the units
to be tested as shown in Figure 5.23. Place the assembly
in an oven and stabilize at maximum SCR rated temperature. Turn on the power supply and raise the voltage to
rated VBO. Allow units to remain with the voltage applied
for a minimum of four hours. At the end of the temperature soak, determine if any units exhibit thermal runaway by checking for blown fuses (without removing the
powerl. Reject any units which have blown circuit fuses.
The forward leakage current, ILF' of the remaining units
may be calculated after measuring the voltage VL, across
resistor R2. Any units with a leakage current greater than
manufacturer's rating should be rejected.

Time of trigger pulse t = 1 /Ls
Pulse gate current IG = 200 mA
Forward blocking voltage VBO = 400 V
Load current ILoad = 30 A
To measure turn-on time using a Tektronix 545 oscilloscope (or equivalentl with a dual trace type CA plugin, connect probes of Channels A and B to Test Points A
and B. Place the Mode selector switch in the Added Algebraically position and the Channel B Polarity switch in
the Inverted position. Adjust the HR212A pulse generator
to give a positive pulse 1 /Ls wide (100 ppsl as viewed at
Test Point A. Adjust the amplitude of the "added" voltage
across the 100-ohm base resistor for the specified pulse
gate current (200 mA in this examplel.
Switch the Mode selector knob to the alternate position. Connect Channel A to Test Point D. Leave the oscilloscope probe, Channel B, at Test Point B, thereby displaying the input trigger waveform. Measure the time
between the 50 percent voltage amplitudes of the two
waveforms. This is the Turn-On Time (t 0 + t Rl.
To measure turn-on time versus temperature, place the
device to be tested on a suitable heat sink and place the
assembly in a temperature chamber. Stabilize the chamber at minimum rated (cold I temperature. Repeat the
above measurements. Raise the chamber temperature to
maximum rated (hotl temperature and stabilize. Repeat
the measurements above.
To measure the turn-on impedance for the specified

+
0

REGULATED
POWER
SUPPLY
-

VL

L

R2

1/16A

ANODE
~TE CATHODE

~

--

ADDITIONAL UNITS
MAYBE
CONNECTED IN
PARALLEL

J

Figure 5.23. Test Setup for SCR Forward Blocking
Voltage and Leakage Current Measurements

)

Figure 5.22. Vertical Set to 4 cm, Horizontal 0.2 ,.,sIcm.
Detected RF Magnetron Pulse

RESISTOR RllS USED ONLY IF MANUFACTURER CALLS FOR BIAS RESISTOR
BETWEEN GATE AND CATHODE. RESISTOR R2 CAN HAVE ANY SMALL VALUE
WHICH, WHEN MULTIPLIED BY MAXIMUM ALLOWABLE LEAKAGE CURRENT,
WILL PROVIDE A CONVENIENT READING OF VOLTAGE VL.

'.<-t. '
MOTOROLA THYRISTOR DEVICE DATA
1-5-22

VBD~
!

E ~ VBO

temperature of operation. Resistor R1 should be chosen
to allow an initial magnitude of current flow at the device
pulse current rating.
To measure holding current, connect the SCRs under
test as illustrated in Figure 5.25. Place SCRs in oven and
stabilize at maximum expected operating temperature.
View the waveform across R1 by connecting the oscilloscope probe (Tektronix 2465) Channel A to Point A, and
Channel a to Point a. Place the Mode Selector switch in
the Added Algebraically position. Place the Polarity swich
of Channel a in the Inverted position. Adjust both Volts!
CM switches to the same scale factor, making sure that
each Variable knob is in its Calibrated position. Adjust
pulse generator for a positive pulse, 1 /Ls wide, and 1,000
pps pulse repetition frequency. Adjust power supply voltage to rated Vao. Adjust input pulse amplitude until unit
fully triggers. Measure amplitude of voltage drop across
R1, V(A - a), and calculate holding current in mA from
the equation

VBO

2

2
OV

t

~

AS SPECIFIED

IC

~

AS SPECIFIED

.....- Von

l00k/

t ~ AS SPECIF~D

/

D

Figure 5.24. Suggested Test Circuit for SCR "On"
Measurements

current load, the on impedance can be measured as an
SCR forward voltage drop. The point in time of measurement shall be half the output pulse width. For a 1 p.s
output pulse, the measurement procedure would be:
Connect the oscilloscope probe, Channel a, to Point 0
shown in Figure 5.24. Use the oscilloscope controls Time/
CM and Multiplier to a setting of 0.5 /LS per centimeter
or faster. With the Amplitude Control set to view 100 volts
per centimeter (to prevent amplifier overloading) measure the amplitude of the voltage drop, VF, across the
SCR 0.5 p.s after the PFN voltage waveform has dropped
to half amplitude. It may be necessary to check ground
reference several times during this test to provide the
needed accuracy of measurement.

mA =

V(A - a)
R1

•

Vao

+ 100 k 0

Any unit which turns on but does not turn off has a holding current of less than
Vao V
100 kO
The approximate voltage setting to view the amplitude
ofthe holding current will be 10 or 20 volts per centimeter.
The approximate sweep speed will be 2 to 5 /Ls per centimeter. These settings will, of course, vary, depending
upon the holding current of the unit under test.
SCR recovery time is greatly dependent upon the circuit
in which the device is used. However, any test of SCR
recovery time should suffice to compare devices of various manufacturers, as long as the test procedure is
standardized. Further evaluation of the selected devices
could be made in an actual modulator circuit tester
wherein techniques conducive to SCR turn-off are used.

HOLDING CURRENT
The 5CR holding current can be measured with or without a gate turn-off current, according to the position of
switch 52. The Motorola Trigger Pulse Generator is a
transistor circuit capable of generating a 1.5/Ls turn-on
pulse followed by a variable-duration turn-off pulse. Measurements should be made at the maximum expected

A

2W

tOOk
TIME AT WHICH TO MEASURE IN
Rt

R3

StA

Ct

7500fd.

NOTE: ADDITIONAL UNITS MAY BE TESTED BY SWTCHING THE
ANODE AND GATE CONNECTIONS TO SIMILARLY
MOUNTED SCRa. SHORT LEAD LENGTHS ARE DESIRABLE.

Figure 5.25. Test Setup for Measuring Holding Current

~t~~*;~~~~~:~}~'~~~~R• •~M• • • • •HIl
MOTOROLA THYRISTOR DEVICE DATA
1-5-23

B

HOLDDff
DIODE

•

PfN
Z()"

RLOAD

Figure 5.26. Modulator Circuit for SCR Tests
The above circuit setup shown in Figures 5.26 and 5.27
can be employed for such tests. A slight load to PFN
mismatch is called for to generate an inverse voltage
across the SCR at the termination of the output pulse. An
SCR gate turn-off pulse is used. The recj)afge component
is a charging choke. providing optimized conditions of
reapplied voltage to the PFN (and across the SCRI. Ad-

equate heat sinking of the SCR should be provided.

PARALLEL CONNECTED SCRs
When an application requires current capability in excess of a single economical SCR. it can be worthwhile to
consider paralleling two or more devices. To help deter-

BLOCK DIAGRAM;
CHARGING CHOKE HOLD OFF DIODE

PULSE TRANSFORMER

r---~~'-----~-----'-----------,

PFN
Es

-=
TRIGGER
IN

SIMPLIFIED SCHEMATIC

Figure 5.27. Radar Modulator. Resonant Line Type

MOTOROLA THYRISTOR DEVICE DATA
1-5-24

mine if two or more SCRs in parallel are more cost effective than one high current SCR, some of the advantages and disadvantages are listed for parallel devices.
Advantages
1. Less expensive to purchase
2. Less expensive to mount
3. Less expensive to replace, in case of failure
4. Ease of mounting
5. Ease of isolation from sink
Disadvantages
1. Increased SCR count
2. Selected or matched devices
3. Increased component count
4. Greater R&D effort
There are several factors to keep in mind in paralleling
and many are pertinent for single SCR operations as well.

GATE DRIVE
The required gate current (lGT) amplitude can vary
greatly and can depend upon SCR type and load being
switched. As a general rule for parallel SCRs, IGT should
be at least two or three times the IGT(MAX) specification
on the data sheet and ideally close to, but never exceeding, the maximum specified gate power dissipation or
peak current. Adequate gate current is necessary for rapid
turn-on of all the parallel SCRs and to ensure simultaneous turn-on without excessive current crowding across
any of the individual die. The rise time of the gate drive
pulse should be fast, ideally.;; 100 ns. Each gate should
be driven from a good current source and through its
own resistor, even if transformer drive is used. Gate pulse
width requirements vary but should be of sufficient width
to ensure simultaneous turn-on and last well beyond the
turn-on delay of the slowest device, as well as beyond
the time required for latching of all devices. Ideally, gate
current would flow for the entire conduction period to
ensure latching under all operating conditions.
.
With low voltage switching, which includes conduction
angles near 1800 and near zero degrees, the gate drive
requirements can be more critical and special emphasis
may be required of gate pulse amplitude and width.

The four parameters shown in Table 5.VI were measured with a curve tracer and are:
IL' latching current; VTM, on-state voltage; IGT and
VGT, minimum gate current and voltage for turn on.
Of the four parameters, IL and VTM can greatly affect
current sharing.
The latching current of each SCR is important at turnon to ensure each device turns on and will stay on for
the entire conduction period. On-state voltage determines how well the SCRs share current when cathode
ballasting is not used.
Table 5.V gives turn-on delay time (td) and turn-on rise
time (t r ) of the anode-cathode voltage and the minimum
forward anode voltage for turn-on. These parameters
were measured in the circuits shown in Figures 5.30 and
5.31. One SCR at a time was used in the circuit shown in
Figure 5.30.
Turn-on delay on twenty-five SCRs was measured (only
ten are shown in Table 5.V) and they could be from one
or more production lots. The variation in td was slight
and ranged from 35 to 44 ns but could vary considerably
on other production lots and this possible variation in td
would have to be considered in a parallel application.
Waveforms for minimum forward anode voltage for
turn-on are shown in Figure 5.28. The trailing edge of the
gate current pulse is phase delayed (R3) so that the SCR
is not turned on. The width of the gate current pulse is
now increased (R5) until the SCR turns on and the forward
anode voltage switches to the on-state at about 0.73 V.
This is the minimum voltage at which this SCR will turn
on with the circuit conditions shown in Figure 5.28.
For dy~amic turn-on current sharing, td, tr and VA(MIN)
are very Important. As an example, with a high wattage
incandescent lamp load, it is very important that the inrush current of the cold filament be equally shared by
the parallel SCRs. The minimum anode voltage at which
a device turns on is also very important. If one of the
Table 5.V. 2N6394 Turn-On Delay, Rise Time and
Minimum Forward Anode Voltage For Turn-On

PARAMETER MATCHING
For reliable current sharing with parallel SCRs, there
are certain device parameters that should be matched or
held within close tolerances. The degree of matching required varies and can be affected by type of load (resistive, inductive, incandescent lamp or phase controlled
loads) being switched.
The most common device parameters that can effect
current sharing are:
1) td - turn-on delay time
2) tr - turn-on rise time of anode current
3) VA(MIN) - minimum anode voltage atwhich de,vice
will turn on
•
4) Static on-state voltage and current
5) IL - Latching current

•

Device

1
2
3
4
5

6
7
8
9
10

Minimum Anode
Turn-On Delay and Rise Time
Voltage For
Off-State Voltage=8 V Peak
Turn-On Off-State
RL = 10 Ohms, IA '" 6.5 A Peak
Voltage=4 V Peak
IG=100 mA (PW=100 pS)
RL=0.5 Ohm
IA=5A
Conduction Angle 90 Degrees
IG=100mA
td(ns)

tripS)

(Volts)

35
38
45
44
44
43
38
38
38
37

0.80
0.95
1
1
0.90
0.85
1.30
1.25
1
0.82

0.70
0.81
0.75
0.75
0.75
0.75
0.75
0.70
0.75
0.70

MOTOROLA THYRISTOR DEVICE DATA
1-5-25

~~~---

_. . _

. .- ...

-----

•

minimum anode voltage for turn-on is from 7 to 14%
lower for device 1 than on 2, 3 and 4. Also, device 1 turnon delay is 35 ns versus 38, 45 and 44 ns for devices 2,
3 and 4.
The tendency for device 1 to turn on, preventing the
other three from turning on, is most probably due to its
lower minimum anode voltage requirement and shorter
turn on delay. The remedy would be closer matching of
the minimum anode voltage for turn-on and driving the
gates hard (but less than the gate power specifications)
and increasing the width of the gate current pulse.
100 p,s!Div

Figure 5.28. Minimum Anode Voltage For Turn-On
Off-State Voltage = 4 V Peak, RL = 0.5 Ohm,
IA "" 5 A, IG = 75 mA
parallel devices turns on before the other devices and its
on-state voltage is lower than the required minimum anode voltage for turn-on of the unfired devices, they therefore cannot turn on. This would overload the device
which turned on, probably causing failure from overcurrent and excessive junction temperature.
Turn-off time - tq is important in higher frequency
applications which require the SCR to recover from the
forward conduction period and be able to block the next
cycle of forward voltage. Thus, tq matching for high frequency operation can be as important as td, tr and
VA(MIN) matching for equal turn-on current sharing.
Due to the variable in tq measurement, no further attempt will be made here to discuss this parameter and
the reader is referred to Application Note AN914.
The need for on-state matching of current and voltage
is important, especially in unforced current sharing
circuits.

UNFORCED CURRENT SHARING
When operating parallel SCRs without forced current
sharing, such as without cathode ballasting using resistors or inductors, it is very important that the device parameters be closely matched. This includes td, t r , minimum forward anode voltage for turn-on and on-state
voltage matching. The degree of matching determines
the success of the circuit.
In circuits without ballasting, it is especially important
that physical layout, mounting of devices and resistance
paths be identical for good current sharing, even with
on-state matched devices.
Figure 5.29 shows how anode current can vary on devices closely matched for on-state voltage (1,3 and 4)
and a mismatched device (2). Without resistance ballasting, the matched devices share peak current within
one ampere and device 2 is passing only nine amps,
seven amps lower than device 1. Table 5.VI shows the
degree of match or mismatch of VTM of the four SCRs.
With unforced current sharing (RK = 0), there vyas a
greater tendency for one device (1) to turn-on, preventing
the others from turning on when low anode switching
voltage (,,;; 10 V rms) was tried. Table 5.V shows that the

FORCED CURRENT SHARING
Cathode ballast elements can be used to help ensure
good static on-state current sharing. Either inductors or
resistors can be used and each has advantages and disadvantages. This section discusses resistive ballasting,
but it should be kept in mind that the inductor method
is usually better suited for the higher current levels. Although they are more expensive and difficult to design,
there is less power loss with inductor ballasting as well
as othei benefits.
The degree of peak current sharing is shown in Figure
5.29 for four parallel 2N6394 SCRs using cathode resistor
ballasting with an inductive anode load. With devices 1,
3 and 4, on-state voltage is matched within 10 mV at an
anode current of 15 A (See Table 5.VI) and are within
1 A of each other in Figure 5.29, with cathode resistance
(RK) equal to zero. As RK increases, the current sharing
becomes even closer. The unmatched device 2, with a
VTM of 1.41 V (Table 5.VI), is not carrying its share of
current (Figure 5.29) with RK equal zero. As RK increases,
device 2 takes a greater share of the total current and
with RK around 0.25 ohm, the four SCRs are sharing peak
current quite well. The value of RK depends on how close
the on-state voltage is matched on the SCRs and the
degree of current sharing desired, as well as the permissible power disSipation in RK.

17

le
:;;

15

>:z
w
a:
a:

l'-.. "»'.

13

r--

5

::::>
(.)

~
0
:z

«

11

><

~

~

~
7

#3
¥

~

#y
V
o

l4

./ SCR#l

....-

/"
IG = 400 rnA
PW = 400 p.s
OFF·STATE VOLTAGE = 26 V Irrns)
INDUCTIVE LOAD
CONDUCTION ANGLE = 120°

50

100

200

Figure 5.29. Effects Of Cathode Resistor On Anode
Current Sharing

MOTOROLA THYRISTOR DEVICE DATA
1-5-26

150

RK, CATHODE RESISTORS IMILLIOHMS)

250

Table 5.VI. 2N6394 Parameters Measured On Curve
Tracer, TC = 25"C

Oevice #

IL' Latching
Current
VO=12 Vdc
IG=100 mA

1
2
3
4
5
6
7
8
9
10

13mA
27
28
23
23
23
18
19
19
16

Minimum Gate
VTM, On-State Current & Voltage
Voltage
for Turn-On
VO=12 Vdc,
IA=15 A
PW=300 p$
RL=140 0
IGT
VGT

1.25 V
1.41
1.26
1.26
1.28
1.26
1.25
1.25
1.25
1.25

5.6 mA
8.8
12
9.6
9.4
9.6
7.1
7
8.4
6.9

0.615 V
0.679
0.658
0.649
0.659
0.645
0.690
0.687
0.694
0.679

LINE SYNCHRONIZED DRIVE CIRCUIT
Gate drive for phase control of the four parallel SCRs
is accomplished with one complementary MOS hex gate,
MC14572, and two bipolar transistors (Figure 5.30). This
adjustable line-synchronized driver permits SCR conduction from near zero to 180 degrees. A Schmitt trigger
clocks a delay monostable multivibrator that is followed

by a pulse-width monostable multi-vibrator.
Line synchronization is achieved through the half-wave
section of the secondary winding of the full-wave, centertapped transformer (A). This winding also supplies power
to the circuit through rectifiers 01 and 02.
The full-wave signal is clipped by diode 05, referenced
to a + 15 volt supply, so that the input limit of the CMOS
chip is not exceeded. The waveform is then shaped by
the Schmitt trigger, which is composed of inverters
U1 - a and U1 - b. A fast switching output signal B results.
The positive-going edge of this pulse is differentiated
by the capacitive-resistive network of C1 and R2 and triggers the delay multivibrator that is composed of
U1-c and U1-d. As a result, the normally high output
is switched low. The trailing edge of this pulse (C) then
triggers the following multivibrator, which is composed
of NAND gate U1-e and inverter U1-f. The positive
going output pulse (waveform D) of this multivibrator,
whose width is set by potentiometer R6, turns on transistors 01 and 02, which drives the gates of the four
SCRs. Transistor 02 supplies about 400 mA drive current
to each gate through 100 ohm resistors and has a rise
time of "" 100 ns.

PARALLEL SCR CIRCUIT
The four SCRs are 2N6394s, housed in the TO-220 package, rated at 12 Arms, 50 V and are shown schematically

r-------I

D1

I

I
I
I
I
I

I

0.01
,."F

I
L

I
I

I

R5
100kO

+15V

I

I

I

0.7ms_--.1

w

~

':::;

MOTOR SPEED CONTROL WITH FEEDBACK
While many motor speed control circuits have used
SCRs, the TRIAC has not been very popular in this application. At first glance, it would appear that the TRIAC
would be perfect for speed control because of its bilateral
characteristics. There are a couple of reasons why this is
not true. The major difficulty is the TRIAC's dv/dt characteristic. Another reason is the difficulty of obtaining a
feedback signal because of the TRIAC's bilateral nature.

~
w
z

R2

::::i

~

Figure 6.11. Circuit Diagram for Controlling
Permanent-Magnet Motors

MOTOROLA THYRISTOR DEVICE DATA
1-6-5

VR

~

 = the flux,
MMF = the magnetomotive force (strength of
the magnet), and

R = the reluctance of the magnetic path.
Assuming the MMF of the permanent magnet to be constant, it is readily apparent that variations in reluctance
will directly affect the flux. The steel fan blades provide
a low-reluctance path for the flux once it crosses the air
gap between them and the poles of the magnet. If the
magnet used has a horseshoe or U shape, and is placed
so that adjacent fan blades are directly opposite each pole
in one position of the motor armature, the magnetic path
will be of relatively low reluctance; then as the motor
turns the reluctance will increase until one fan blade is
precisely centered between the poles of the magnet. As
rotation continues, the reluctance will then alternately
increase and decrease as the fan blades pass the poles
of the magnet. If a bar- or L-shaped magnet is used so
that one pole is close to the shaft or the frame of the
motor and the other is near the fan blades, the magnetic
path reluctance will vary as each blade passes the magnet
pole near the fan. In either case the varying reluctance
causes variations in the circuit flux and a voltage is generated in the coil wound around the magnet. The voltage
is given by the equation:

CONSTANT SPEED MOTOR CONTROL USING
TACHOMETER FEEDBACK
Tachometer feedback sensing rotor speed provides excellent performance with electric motors. The principal
advantages to be gained from tachometer feedback are
the ability to apply feedback control to shaded-pole motors, and better brush life in universal motors used in
feedback circuits. This latter advantage results from the
use of full-wave rather than half-wave control, reducing
the peak currents for similar power levels.
THE TACHOMETER
The heart of this system is, of course, the speedsensing tachometer itself. Economy being one ofthe principal goals of the design, it was decided to use a simple
magnetic tachometer incorporating the existing motor
fan as an integral part of the magnetic circuit. The generator consists of a coil wound on a permanent magnet
which is placed so that the moving fan blades provide a
magnetic path of varying reluctance as they move past
the poles of the magnet. Several possible configurations
of the magnetic system are shown in Figure 6.14.

e = -N dx 10-8
dt
'
where

e

= the coil voltage in volts,

N = the number of turns in the coil, and
d = the rate of change of flux in lines per
dt
second.

COIL WIRES

~NU®

MOTOR
ARMATURE
MOTOR
ARMATURE

SIDE VIEW

FERROUS
MOTOR HOUSING

MOTOR
ARMATURE

~

TOP VIEW

Figure 6.14(a). Locations for Magnetic Sensing
Tachometer Generator Using a Horseshoe Magnet

POSSIBLE MAGNET SHAPES
AND LOCATIONS

(b). Locations for Magnetic Sensing Tachometer
Generator Using an "L" or Bar Magnet

MOTOROLA THYRISTOR DEVICE DATA
1-6-7

•

+ V1 IPURE del

In a practical case, a typical small horseshoe magnet
wound with 1000 turns of wire generated a voltage of
about 0.5 volts/1000 rpm when mounted in a blender.
Since both generated voltage and frequency are directly proportional to the motor speed, either parameter
can be used as the feedback signal. However, circuits
using voltage sensing are less complex and therefore less
expensive. Only that system will be discussed here.

•

;..:.

IPULSING del

-y-y-y-y+V2
TACHOMETER
GENERATOR

THE ELECTRONICS
In one basic circuit, which is shown in Figure 6.15, the
generator output is rectified by rectifier 01, then filtered
and applied between the positive supply voltage and the
base of the detector transistor 01. This provides a negative voltage which reduces the base-voltage on 01 when
the speed increases.
The emitter of the detector transistor is connected to
a voltage divider which is adjusted to the desired tachometer output voltage. In normal operation, if the tachometer voltage is less than desired, the detector transistor,
01, is turned on by current through R1 into its base. 01
then turns on 02 which causes the timing capacitor for
unijunction transistor 03 to charge quickly. Standard unijunction transistor circuitry is used to trigger the thyristor.
As the tachometer output approaches the voltage desired, the base-emitter voltage of 01 is reduced to the
point at which 01 is almost cut off. Thereby, the collector
current of 02, which charges the unijunction timing capacitor, is reduced, causing that capacitor to charge
slowly and trigger the thyristor later in the half cycle. In
this manner, the average power to the motor is reduced
until just enough power to maintain the desired motor
speed is allowed to flow.
Input circuit variations are used when the tachometer
output voltage is too low to give a usable signal with a
silicon rectifier. In the variation shown in Figure 6.15(b),
the tachometer is connected between a voltage divider
and the base of the amplifier transistor. The voltage divider is set so that with no tachometer output the transistor is just barely in conduction. As the tachometer output increases, aT is cut off on negative half cycles and
conducts on positive half cycles. Resistors R9 and R10
provide a fixed gain for this amplifier stage, providing
the hFE of aT is much greater than the ratio of R9 to R10.
Thus the output of the amplifier is a fixed multiple of the
positive values of the tachometer waveform. The rectifier
diode 01 prevents C1 from discharging through R9 on
negative half cycles of the tachometer. The remainder of
the filter and control circuitry is the same as the basic
circuit.
In the second variation, shown in 6.15(c), RS has been
replaced by a semiconductor diode, 02. Since the voltage
and temperature characteristics more closely match
those of the transistor base-to-emitter junction, this circuit is easier to design and needs no initial adjustments
as does the circuit in 6.15(b). The remainder ofthis circuit
is identical to that of Figure 6.14.
In the second basic circuit, which is shown in Figure
6.16, the rectified and filtered tachometer voltage is
added to the output voltage of the voltage divider formed
.....

120V
AC

R4
INPUT CIRCUIT I
I

DETECTOR AND POWER
CONTROL CIRCUIT

Figure 6.15(a). Basic Tachometer Control Circuit

R9

R7

C1

R1

TACH

aT
R8

01

R10

(b). Variation Used when the Tachometer Output is
Too Low for Adequate Control

R9

aT

C1

R1

01

R10

(c). Variation Providing Better Temperature Tracking
and Easier Initial Adjustment
by R1 and R2. If the sum of the two voltages is less than
V1 - VBE 01 (where VBE 01 is the base-emitter voltage
of 01), 01 will conduct a current proportional to V1 VBE 01, charging capacitor C. If the sum of the two voltages is greater than V1 - VBE 01, 01 will be cut off and
no current will flow into the capacitor. The operation of
the remainder of the circuit is the same as the previously
described circuits.
All of the circuits that have been described show a
unijunction transistor as the trigger device. A three-layer
bilateral trigger diode may also be used as shown in
Figure 6.17. The rectifier diode which is connected to the
pulsing dc voltage, V2, discharges the capacitor at the
end of each half cycle of the line voltage alternations,
providing synchronization to the line voltage.
Complete circuit diagrams using the two basic circuits
are shown in Figure 6.1S.

. '~.'­
:,.

MOTOROLA THYRISTOR DEVICE DATA
1-6-8

mined by the control circuit, the thyristor switches on for
the remainder of the half cycle. By controlling the phase
angle at which the thyristor is switched on, the relative
power in the load may be controlled.

PHASE CONTROL WITH TRIGGER DEVICES
Phase control using thyristors is one of the most common means of controlling the flow of power to electric
motors, lamps, and heaters. With an ac voltage applied
to the circuit, the gated thyristor (SCR, TRIAC, etc.) remains in its off-state for the first portion of each half cycle
of the power line, then, at a time (phase angle) deter-

PHASE CONTROL WITH UNIJUNCTION
TRANSISTORS
Unijunction transistors provide a simple, convenient

•

TO

~

R1

120 VAC

+V2

+ V1 IPURE del

LOAD

CHARGING
CIRCUIT

LOAD

MBS4991
120 VAC

NOTE: V1

120VAC
60 Hz

> VBR OF TRIGGER

Figure 6.17. Use of a Bidirectional Switch as the
Triggering Device Instead of the Unijunction
Transistors Shown in Other Figures

Figure 6.16. Another Basic Tachometer Circuit

D---1~----------------------------------'

1N4001
6.8 k

1N984A

10 k

1W

4.7k

47k

+

2 fJ,F
10V

+
MDA201

100 JLF~ +

1N4001

60V
MPSA20

MAC2104
0.1 JLF

1k

IT-SPRAGUE
11Z121
OR EOUIV

Figure 6.18Ia). Complete Diagram of Tachometer Speed Control Shown in 6.15

MMBD7000

1k

MAC210-4

100 k
0.1 JLF

IT·SPRAGUE
11Z121
OR EOUIV

Figure 6.18(b). Complete Diagram of Tachometer Speed Control Shown in 6.16
:.:
~ ,!

. '"

'.:

MOTOROLA THYRISTOR DEVICE DATA
1-6-9

'v'

.....

•

means for obtaining the thyristor trigger pulse synchronized to the ac line at a controlled phase angle.
These circuits are all based on the simple relaxation
oscillator circuit of Figure 6.19. RT and CT in the figure
form the timing network which determines the time between the application of voltage to the circuit (represented by the closing of S1) and the initiation of the pulse.
In the case of the circuit shown, with Vs pure dc, the
oscillator is free running, RT and CT determine the frequency of oscillation. The peak of the output pulse voltage is clipped by the forward conduction voltage of the
gate to cathode diode in the thyristor. The principal waveforms associated with the circuit are shown in Figure
6.19(b).
Operation of the circuit may best be described by referring to the capacitor voltage waveform. When the
power is applied, CT charges at the rate determined by
its own capacitance and the value of RT until its voltage
reaches the peak point voltage of the UJT emitter. At that
time the UJT switches into the conduction condition, discharging CT through RB' and the gate of the thyristor.
With Vs pure dc, the cycle then repeats immediately;
however, in many cases Vs is derived from the anode

f---o'~
Vs

1
(a)

I

I

v

I
I
I
I

~

!:;

cog

rI

~~

~

o

RB1

= 0.2 RBB(MIN) = 0.2 x 4 k = 40 ohms

Vs
20
RB2 is necessary only if some degree of temperature
compensation is necessary. In most cases, particularly in
the feedback systems described later, it may be left out
and base 2 of the unijunction may be connected to the
positive side of Vs'
It is often necessary to synchronize the timing of the
output pulses to the power line voltage zero-crossing
points. One simple method of accomplishing synchronization is shown in Figure 6.20. Zener diode D1 clips the
rectified supply voltage resulting in a Vs as shown in
6.20(b). Since VBB, and therefore the peak point voltage
ofthe unijunction drops to zero each time the line voltage
corsses zero, CT is discharged at the end of every half
cycle and begins each half cycle in the discharged state.
Thus, even if the UJT has not triggered during one half
cycle, the capacitor begins the next half cycle discharged
so that the phase angle at which the pulse occurs is directly controlled for each cycle by the values of RT and
CT. The zener diode also provides voltage stabilization
for the timing circuit giving the same pulse phase angle
regardless of normal line voltage fluctuations.
APPLICATIONS
The most elementary application of the UJT trigger
circuit, shown in Figure 6.21, is a half-wave control circuit.
In this circuit, RD is selected to limit the current through
D1 so that the diode dissipation capability is not exceeded. Dividing the allowable diode dissipation by onehalf the zener voltage will give the allowable positive
current in the diode since it is conducting in the voltage
regulating mode only during positive half cycles. Once
the positive half-cycle current is found, the resistor value
may be calculated by subtracting 0.7 times the zener voltage from the rms line voltage and dividing the result by
the positive current:

I

w

voltage of the thyristor so that the timing cycle cannot
start again until the thyristor is blocking forward voltage
and once again provides Vs.
During the time in which the capacitor is being charged,
current flows through the interbase resistance (rBB) of
the unijunction. RB1 is included in the circuit to provide
a path for this current so that it does not flow through
the gate of the thyristor and cause an undesirable turn
on. Its value is selected so that a maximum voltage developed across it will be less than 0.2 volt. For a typical
unijunction with rBB = 4 to 9 kohms, and a typical operating voltage of 20 volts, the value of RB1 would be:

Erms - 0.7 Vz
RD = --'-"-:-"----=
Ipositive

---VCG

I

t::::::!________ laaR81
(b)

Figure 6.19. Basic Relaxation Oscillator Circuit (a)
and Waveforms (bl

The power rating of RD must be calculated on the basis
of full wave conduction as D1 is conducting on the negative half cycle acting as a shunt rectifier as well as providing Vs on the positive half cycle.
The thyristor is acting both as a power control device
and a rectifier, providing variable power to the load during the positive half cycle and no power to the load during

~*jl.j;cJA1m,$'lJ;ti!!1i?NJ;:;;i):I::a:t~~~~~jfJ;K~~
MOTOROLA THYRISTOR DEVICE DATA
1-6-10

I

RD
RT

CONTROL I - - _ J
CIRCUIT

RB2

D1

Vs
(al. Resistive Load
CT

LINE

(al

/

--..Jvs_-.. r

/

~

/

I

/

RB1

I

\

\

I

SIN:~~E
/
,
I

\

V

CONTROL I - - _ J
CIRCUIT

RECTIFIED

I

V

\.

\

(bl. Inductive Load

\

•

Figure 6.22. Half Wave Controls with Switching for
Full Wave Operation

(bl
Figure 6.20. Control Circuit (al with Zener Clipped,
Rectified Voltage (bl
the negative half cycle. The circuit is designed to be a
two terminal control which can be inserted in place of a
switch. If full wave power is desired as the upper extreme
of this control, a switch can be added which will short
circuit the SCR when RT is turned to its maximum power
position. The switch may be placed 'in parallel with the
SCR if.the load is resistive; however, if the load is inductive, the load must be transferred from the SCR to the
direct line as shown in Figure 6.22.
Full wave control may be realized by the addition of a
bridge rectifier, a pulse transformer, and by changing the
thyristor from an SCR to a TRIAC, shown in Figure 6.23.
In this circuit RB1 is not necessary since the pulse transformer isolates the thyristor gate from the steady-state
UJT current.
Occasionally a circuit is required which will provide
constant output voltage regardless of line voltage
changes. Adding potentiometer P1 to the circuits of Figures 6.21 and 6.23 will provide an approximate solution
to this problem. The potentiometer is adjusted to provide

reasonably constant output over the desired range of line
voltage. As the line voltage increases, so does the voltage
on the wiper of P1 increasing VBB and thus the peak point
voltage of the UJT. The increased peak point voltage results in CT charging to a higher voltage and thus taking
more time to trigger. The additional delay reduces the
thyristor conduction angle and maintains the average
voltage at a reasonably constant value.

FEEDBACK CIRCUITS
The circuits described so far have been manual control
circuits; i.e., the power output is controlled by a potentiometer turned by hand. Simple feedback circuits may
be constructed by replacing RT with heat or lightdependent sensing resistors; however, these circuits
have no means of adjusting the operating levels. The
addition of a transistor to the circuits of Figures 6.21 and
6.23 allows complete control.

LOAD
900W

RD

LOAD
600W

LINE
AC
LINE

Figure 6.21. Half Wave Control Circuit with Typical
Values for a 600 Watt Resistive Load

Figure 6.23. A Simple Full Wave Trigger Circuit with
Typical Values for a 900 Watt Resistive Load

~~,,'Y,<',':',"" P'4~.>
';1"""'",rt,,,<0}t;J';e.<{j'~":';~w,t*¥"'W!~1IJI,J'f.':'f~
..Jr~~"'1l6~ft~!!t>14>j1;:1 ";~i.!';'~
,..."''0'>"~ . .f..::> ...:#.-i~ ... '-;;'1·..p.~·~N##';s;"~7f~~2·::-..,~~·"·III;~<:.mn~.%~·}~.~'

~

.....

<

MOTOROLA THYRISTOR DEVICE DATA
1-6-11

RD

I

6.8 k

PI

6.8 k

RECTIFIED
LINE
IFULL DR
HALFWAVEI

RB2

RECTIFIED
LINE

DI
IN5250A

RC
100 k

11N5250A

Figure 6.26. Voltage Feedback Circuit

•

Figure 6.24. Circuit for Line Voltage Compensation
2N4442
6.8 k
6.8 k

RD

RD
RECTIFIED
LINE
IFULL OR
HALFWAVEI

RC
1k

AC
LINE

RI
100 k
LOAD
SOOW

RB2
1k

~

R2
30 k

IN5250A
*RS SHOULD BE SELECTED TO BE ABOUT
3 TO 5 KOHMS AT THE DESIRED OUTPUT LEVEL

Figure 6.27. Half Wave. Average Voltage Feedback

Figure 6.25. Feedback Control Circuit
Figure 6.25 shows a feedback control using a sensing
resistor for feedback. The sensing resistor may respond
to anyone of many stimuli such as heat, light, moisture,
pressure, or magnetic field. Rs is the sensing resistor and
Rc is the control resistor that establishes the desired operating point. Transistor 0, is connected as an emitter
follower such that an increase in the resistance of Rs
decreases the voltage on the base of 0" causing more
current to flow. Current through 0, causes voltage to
charge CT, triggering the UJT at some phase angle. As
Rs becomes larger, more current flows into the capacitor,
the voltage builds up faster, causing the UJT to trigger
at a smaller phase angle and more power is applied to
the load. When Rs decreases, less power is applied to
the load. Thus, this circuit is for a sensing resistor which
decreases in response to too much power in the load. If
the sensing resistor increases with load power, then Rs
and Rc should be interchanged.
Ifthe quantity to be sensed can be fed back to the circuit
in the form of an isolated, varying dc voltage such as the
output of a tachometer, it may be inserted between the
voltage divider and the base of 0' with the proper polarity. In this case, the voltage divider would be a potentiometer to adjust the operating point. Such a circuit is
shown in Figure 6.26.
In some cases, average load voltage is the desired feedback variable. In a half wave circuit this type of feedback
usually requires the addition of a pulse transformer,
shown in Figure 6.27. The RC network, R" R2, C" averages load voltage so that it may be compared with the
set point on Rs by 0,. Full wave operation of this type
of circuit requires dc in the load as well as the control
circuit. Figure 6.28 is one method of obtaining this full
wave control.

=, .

. .: ~

IN4721

121

SPRAGUE I1Z12
lOR EQUIVALENTI

AC LINE

Figure 6.28. Full Wave. Average Voltage
Feedback Control

There are, of course, many more sophisticated circuits
which can be derived from the basic circuits discussed
here. If. for example, very close temperature control is
desired, the circuit of Figure 6.25 might not have sufficient
gain. To solve this problem a dc amplifier could be inserted between the voltage divider and the control transistor gate to provide as close a control as desired. Other
modifications to add multiple inputs, switched gains,
ramp and pedestal control, etc., are all simple additions
to add sophistication. Basically, however, it is the UJT
itself which provides the fast rising, high current pulse,
which is desirable for reliable thyristor operation. The
ease of adding feedback and relative insensitivity to line
voltage changes are additional benefits gained from
using this trigger device .

:.

.'

MOTOROLA THYRISTOR DEVICE DATA
1-6-12

CYCLE CONTROL WITH OPTICALLY
ISOLATED TRIAC DRIVERS

designer may stack two of them in series. When used
this way, two resistors are required to equalize the voltage dropped across them as shown in Figure 6.29.

In addition to the phase control circuits, TRIAC drivers
can also be used for ac power control by on-off or burst
control, of a number of ac cycles. This form of power
control allows logic circuits and microprocessors to easily control ac power with TRIAC drivers of both the zerocrossing and non zero-crossing varieties.

USING NON-ZERO CROSSING OPTICALLY
ISOLATED TRIAC DRIVERS
USING THE MOC3011 ON 240 VAC LINES
The rated voltage of a MOC3011 is not sufficiently high
for it to be used directly on 240 V line; however, the

REMOTE CONTROL OF AC VOLTAGE
Local building codes frequently require all 115 V light
switch wiring to be enclosed in conduit. By using a
MOC3011, a TRIAC, and a low voltage source, it is possible to control a large lighting load from a long distance
through low voltage signal wiring which is completely
isolated from the ac line. Such wiring usually is not required to be put in conduit, so the cost savings in installing a lighting system in commercial or residential
buildings can be considerable. An example is shown in
Figure 6.29. Naturally, the load could also be a motor,
fan, pool pump, etc.

+5V
150

180

LOAD

MOC3011

1M

MOC3011

1M

240 Vac

1k

Figure 6.29. Two M0C3011 TRIAC Drivers in Series to Drive 240 V TRIAC

NON·CONDUIT #22 WIRE

160

115 V
360

_~"'L. 2N6342A

Figure 6.30. Remote Control of AC Loads Through Low Voltage Non-Conduit Cable
,;..

MOTOROLA THYRISTOR DEVICE DATA
1-6-13

incandescent lamps, reduces the surge current strains on
the TRIAC, and reduces EMI generated by load switching.
Of course, zero crossing can be generated within the
microcomputer itself, but this requires considerable software overhead and usually just as much hardware to
generate the zero-crossing timing signals.

SOLID STATE RELAY

Figure 6.30 shows a complete general purpose, solid
state relay snubbed for inductive loads with input protection. When the designer has more control of the input
and output conditions, he can eliminate those components which are not needed for his particular application
to make the circuit more cost effective.

APPLICATIONS USING THE ZERO CROSSING
TRIAC DRIVER

INTERFACING MICROPROCESSORS TO 115 VAC
PERIPHERALS

•

For applications where EMI induced, non-zero
crossing-load switching is a problem, the zero crossing
TRIAC driver is the answer. This TRIAC driver can grea1ly
simplify the suppression of EMI for only a nominal increased cost. Examples of several applications using the
MOC3031,41 follows.

The output of a typical microcomputer input-output (I/
0) port is a TTL-compatible terminal capable of driving
one or two TTL loads. This is not quite enough to drive
the MOC3011, nor can it be connected directly to an SCR
or TRIAC, because computer common is not normally
referenced to one side of the ac supply. Standard 7400
series gates can provide an input compatible with the
output of an MC6821, MC6846 or similar peripheral interface adaptor and can directly drive the MOC3011. If
the second input of a 2 input gate is tied to a simple
timing circuit, it will also provide energization of the
TRIAC only at the zero crossing of the ac line voltage as
shown in Figure 6.32. This technique extends the life of

MATRIX SWITCHING

Matrix, or point-to-point switching, represents a
method of controlling many loads using a minimum
number of components. On the 115 V line, the MOC3031
is ideal for this application; refer to Figure 6.33. The large
static dv/dt rating of the MOC3031 prevents unwanted

150

180

2.4 k

2W
lN4OO2

115V

10 k

47

Figure 6.31. Solid-State Relay

+5V~

__

~

____________

200W

+5V

~

180

7400
ADDRESS
MC6800 1-----"
OR
MC6802
MPU
DATA

MC6820

r--t-r"),.+-_-.,~300~....j

OR
MC6821
OR

115V
(RESISTIVE
L..:::..:.:':':":'_ _-oLOAD)

MOC3011

180

300

MC6846
1/0

115V:JII~

'-----1 MOC3011
1k

OPTOTRIAC
DRIVERS

t-'VVV--o 5 V

OPTIONAL
ZERO·CROSSING
CIRCUITRY

Figure 6.32. Interfacing an M6800 Microcomputer System to 115 Vac Loads

MOTOROLA THYRISTOR DEVICE DATA
1-6-14

MOTOR
115V
(INDUCTIVE
LOAD)

CONTROL BUS

Figure 6.33. Matrix Switching

loads from being triggered on. This might occur, in the
case of non-zero crossing TRIAC drivers, when a TRIAC
driver on a vertical line was subjected to a large voltage
ramp due to a TRIAC on a horizontal line being switched
on. Since non-zero crossing TRIAC drivers have lower
static dv/dt ratings, this ramp would be sufficiently large
to trigger the device on.
R is determined as before:
R(min) =

=

Vin(pk)
ITSM
170 V
1.2 A

=

POWER RELAYS

The use of high-power relays to control the application
of ac power to various loads is a very widespread practice. Their low contact resistance causes very little power
loss and many options in power control are possible due
to their multipole-multithrow capability. The MOC3041 is
well suited to the use of power relays on the 230 Vac
line; refer to Figure 6.34. The large static dv/dt of this
device makes a snubber network unnecessary, thus reducing component count and the amount of printed circuit board space required. A non-zero crossing TRIAC

150 ohms

3000
CONTROL

MOC
3041

230VAC

POWER
RELAY
1230 VAC COil)

Figure 6.34. Power Relay Control

MOTOROLA THYRISTOR DEVICE DATA
1-6-15

+5V

+5V
7400

200W
300
115V
IRESISTIVE
LOAD)

MOC
3031
MC68000
MPU

•

MOTOR

3000

300
MOC
3041

1 kO
_-vvv-u

230 V
!INDUCTIVE
LOAD)

+ 5V

Figure 6.35. M68000 Microcomputer Interface

cause a voltage much higher than 115 Vac to appear
across the winding which is not conducting current.

driver (MOC3021) could be used in this application, but
its lower static dv/dt rating would necessitate a snubber
network.

DETERMINING LIMITING RESISTOR R FOR A
HIGH-WATTAGE INCANDESCENT LAMP
Many high-wattage incandescent lamps suffer shortened lifetimes when switched on at ac line voltages other
than zero. This is due to a large inrush current destroying
the filament. A simple solution to this problem is the use
of the MOC3041 as shown in Figure 6.37. The MOC3041
may be controlled from a switch or some form of digital
logic.
The minimum value of R is determined by the maximum surge current rating of the MOC3041 (lTSM):

MICROCOMPUTER INTERFACE
The output of most microcomputer input/output (110)
ports is a TTL signal capable of driving several TTL gates.
This is insufficient to drive a zero-crossing TRIAC driver.
In addition, it cannot be used to drive an SCR or TRIAC
directly, because computer common is not usually referenced to one side of the ac supply. However, standard
7400 NAND gates can be used as buffers to accept the
output of the I/O port and in turn, drive the MOC3031
and/or MOC3041; refer to Figure 6.35.
The zero-crossing feature of these devices extends the
life of incandescent lamps, reduces inrush currents and
minimizes EMI generated by load switching.

R(min) =

Vin(pk)
ITSM

_ Vin(pk)
- 1.2 A

ACMOTORS
The large static dv/dt rating of the zero-crossing TRIAC
drivers make them ideal when controlling ac motors. Figure 6.36 shows a circuit for reversing a two phase motor
using the MOC3041. The higher voltage MOC3041 is required, even on the 115 Vac line, due to the mutual and
self-inductance of each of the motor windings, which may

On a 230 Vac Line:
340 V
R(min) = 1.2 A = 283 ohms
In reality, this would be a 300 ohm resistor.

o~-----------------------------,

OPTIONAL
CURRENT LIMITING RESISTOR
115V

R

C

300

T

o

Figure 6.36. Reversing Motor Circuit
'.

:

~.'

:~ ..;-t"

:.';:

(10)

"-"l:"'::-:;':"

MOTOROLA THYRISTOR DEVICE DATA
1-6-16

MOC

3041

(11)

@D

LAMP

R
~

SWITCH OR
DIGITAL LOGIC

300

MOC
3041

"fC-

23ov

Figure 6.37. High-Wattage Lamp Control

AC POWER CONTROL WITH SOLID-STATE
RELAYS
The Solid-State Relay (SSR) as described below, is a
relay function with:
a.
b.
c.
d.
e.

Four Terminals (Two Input, Two Output)
DC or AC Input
Optical Isolation Between Input and Output
Thyristor (SCR or TRIAC) Output
Zero Voltage Switching Output (Will Only Turn On
Close to Zero Volts)
f. AC Output (50 or 60 Hz)

Figure 6.38 shows the general format and waveforms
of the SSR. The input on/off signal is conditioned (perhaps only by a resistor) and fed to the Light-EmittingDiode (LED) of an optoelectronic-coupler. This is ANDed
with a go signal that is generated close to the zerocrossing of the line, typically .s; 10 Volts. Thus, the output
is not gated on via the amplifier except at the zero-crossing of the line voltage. The SSR output is then re-gated
on at the beginning of every half-cycle until the input on
signal is removed. When this happens, the thyristor output stays on until the load current reaches zero, and then
turns off.

ADVANTAGES AND DISADVANTAGES OF SSRs
The SSR has several advantages that make it an attractive choice over its progenitor, the Electromechanical
Relay (EMR) although the SSR generally costs more than
its electromechanical counterpart. These advantages are:
1) No Moving Parts - the SSR is all solid-state. There
are no bearing surfaces to wear, springs to fatigue,
assemblies to pick up dust and rust. This leads to
several other advantages.
2) No Contact Bounce - this in turn means no contact
wear, arcing, or Electromagnetic Interference (EMI)
associated with contact bounce.
3) Fast Operation - usually less than 101-'5. Fast turnon time allows the SSR to be easily synchronized
with line zero-crossing. This also minimizes EMI and
can greatly increase the lifetime of tungsten lamps,
of considerable value in applications such as traffic
signals.

4) Shock and Vibration Resistance - the solid-state
contact cannot be "shaken open" as easily as the
EMR contact.
5) Absence of Audible Noise - this devolves from the
lack of moving mechanical parts.
6) Output Contact Latching -the thyristor is a latching
device, and turns off only at the load current zerocrossing, minimizing EMI.
7) High Sensitivity - the SSR can readily be designed
to interface directly with TTL and CMOS logic, simplifying circuit design.
8) Very Low Coupling Capacitance Between Input and
Output. This is a characteristic inherent in the optoelectronic-coupler used in the SSR, and can be useful in areas such as medical electronics where the
reduction of stray leakage paths is important.
This list of advantages is impressive, but of course, the
designer has to consider the following disadvantages:
1) Voltage Transient Resistance - the ac line is not
the clean sine wave obtainable from a signal generator. Superimposed on the line are voltage spikes
from motors, solenoids, EMRs (ironical), lightning,
etc. The solid-state components in the SSR have a
finite voltage rating and must be protected from
such spikes, either with RC networks (snubbing),
zener diodes, MOVs or selenium voltage clippers. If
not done, the thyristors will turn on for part of a half
cycle, and at worst, they will be permanently damaged, and fail to block voltage. For critical applications a safety margin on voltage of 2 to 1 or better
should be sought.
The voltage transient has at least two facets the first is the sheer amplitude, already discussed.
The second is its frequency, or rate-of-rise of voltage
(dv/dt). All thyristors are sensitive to dv/dt to some
extent, and the transient must be snubbed, or
"soaked up," to below this level with an RC network.(1) Typically this rating ("critical" or "static"

(1) For a more thorough discussion of snubbers, see page 1-3-9.

MOTOROLA THYRISTOR DEVICE DATA
1-6-17

•

v
LOAD

INPUT ••f----i
ON/OFF

I

LED

AMPL
LINE

lINEO~\J

NO~~ 0

0

not have as definite an off condition. There is always
some current leakage through the output power
switching thyristor, the control circuitry, and the
snubbing network. The total of this leakage is usually 1 to 10 mA rms - three or four orders of magnitude less than the on-state current rating.
4) Multiple Poles - are costly to obtain in SSRs, and
three phase applications may be difficult to
implement.
5) Nuclear Radiation - SSRs will be damaged by nuclear radiation.

~\..

non

0

ON
OFF--"'-----.1...I-----OUTPUT

--'V--+-C\--'------

TRIAC SSR CIRCUIT

Figure 6.38. SSR Block Diagram

dv/dt) is 50 to 100 V/ILS at maximum temperature.
Again the failure mode is to let through, to a halfcycle of the line, though a high energy transient can
cause permanent damage. Table 6.1 gives some
starting points for snubbing circuit values. The component values required depend on the characteristics of the transient, which are usually difficult to
quantify. Snubbing across the line as well as across
the SSR will also help.

Load Current
Arms

Resistance
.0

Capacitance

5

47

0.047

pF

10

33

0.1

25

10

0.22

40

22

0.47

Table 6.1. Typical Snubbing Values

2) Voltage Drop - The SSR output contaC1 has some
offset voltage - approximately 1 V, depending on
current, causing dissipation. As the thyristor has an
operating temperature limit of + 125°C, this heat
must be removed, usually by conduC1ion to air via
a heat sink or the chassis.
3) Leakage Current - When an EMR is open, no current can flow. When an SSR is open however, it does

Many SSR circuits use a TRIAC as the output switching
device. Figure 6.39(a) shows a typical TRIAC SSR circuit.
The control circuit is used in the SCR relay as well, and
is defined separately. The input circuit is TTL compatible.
Output snubbing for induC1ive loads will be described
later.
A sensitive-gate SCR (SCR1) is used to gate the power
TRIAC, and a transistor amplifier is used as an interface
between the optoelectronic-coupler and SCR1. (A
sensitive-gate SCR and a diode bridge are used in preference to a sensitive gate TRIAC because of the higher
sensitivity of the SCR.)

CONTROL CIRCUIT OPERATION
The operation of the control circuit is straightforward.
The AND funC1ion of Figure 6.38 is performed by the
wired-NOR colleC1or configuration of the small-signal
transistors 01 and 02. 01 clamps the gate of SCR1 if
optoeleC1ronic-coupler OC1 is off. 02 clamps the gate if
there is sufficient voltage at the junC1ion of the potential
divider R4, R5 to overcome the VBE of 02. By judicious
seleC1ion of R4 and R5, 02 will clamp SCR1's gate if more
than approximately 5 Volts appear at the anode of SCR1;
i.e., 02 is the zero-crossing deteC1or.
If OC1 is on, 01 is clamped off, and SCR1 can be turned
on by current flowing down R6, only if 02 is also off which it is only at zero crossing.
The capacitors are added to eliminate circuit race conditions and spurious firing, time ambiguities in operation.
Figure 6.39(b) shows the full-wave reC1ified line that appears across the control circuit. The zero voltage firing

• • • I!!!IIA.-fiIO_ _ _ _ _IIIH•••liJlJ_I_ _••TfRIJIIlWIII'!
MOTOROLA THYRISTOR DEVICE DATA
1-6-18

r- -

----~r

+

IIN;UT

LOAD

Rll

I

C1

R1

R4

R2

R6

I
R13

I
I

I
I
I

OC1

....--+----i

I

I

Q2

I
C11

R7

01
1.._

C2

_

I

R12

RS

I

R3

I
LINE I
_J

INPUT AND CONTROL CIRCUIT

Figure 6.39(al. TRIAC SSR Circuit
VSCR1

(b)
"ZERO" VOLTAGE
FIRINGLEVEL

/
/

/ "r

/

I
I

(e)

FIRING
WINDOW
WITHOUT
C1 AND C2

/
I

(dl

I
I

FIRING
WINDOW
WITH
C1 AND C2

~

FIRING WINDOW

I

I

I

Figure 6.39. Firing Windows

MOTOROLA THYRISTOR DEVICE DATA
1-6-19

~

I

•

•

Table 6.11. Control Circuit Parts List
Line Voltage

level is shown in 6.39(b) and 6.39(c), expanded in time
and voltage. A race condition exists on the up-slope of
the second half-cycle in that SCRl may be triggered via
R6 before Ql has enough base current via R2 to clamp
SCRl 's gate. Cl provides current by virtue of the rate of
change of the supply voltage, and Ql is turned on firmly
as the supply voltage starts to rise, eliminating any possibility of unwanted firing of the SSR; thus eliminating
the race condition.
This leaves the possibility of unwanted firing of the
SSR on the down-slope of the first half cycle shown. C2
provides a phase shift to the zero voltage potential divider, and Q2 is held on through the real zero-crossing.
The resultant window is shown in 6.39(d).

CONTROL CIRCUIT COMPONENTS
The parts list for the control circuit at two line voltages
is shown in Table 6.11.
Rl limits the current in the input LEO of DC1. The input
circuit will function over the range of 3 to 33 Vdc.
01 provides reverse voltage protection for the input of
DC1.
02 allows the gate of SCRl to be reverse biased, providing better noise immunity and dv/dt performance.
R7 eliminates pickup on SCR1's gate through the zerocrossing interval.
SCRl is a sensitive gate SCR; the 2N5064 is a TO-92
device, the 2N6240 is a Case 77 device.
Alternatives to the simple series resistor (Rl) input circuit will be described later.
POWER CIRCUIT COMPONENTS
The parts list for the TRIAC power circuit in Figure
6.39(a) is shown in Table 6.111 for several rms current
ratings, and two line voltages. The metal TRIACs are in
the half-inch pressfit package in the isolated stud configuration; the plastic TRIACs are in the TO-220 Thermowatt
package. R12 is chosen by calculating the peak control
circuit off-state leakage current and ensuring that the voltage drop across R12 is less than the VGT(MIN) of the
TRIAC.

Part

120 V rms

240 V rms

Cl
C2
Dl
D2
OCl
01
02
Rl
R2
R3
R4
R5
R6
R7
SCRl

220 pF, 20%, 200 Vdc
0.022 p.F, 20%, 50 Vdc
lN4001
lN4001
MOC1005
MPS5172
MPS5172
1 kO, 10%, 1 W
47 kO, 5%,112 W
1 MO, 10%, 1/4 W
110 kO, 5%, 1/2 W
15 kO, 5%,114 W
33 kO, 10%, 1/2 W
10 kO, 10%, 1/4 W
2N5064

100 pF, 20%,400 Vdc
0.022 p.F, 20%, 50 Vdc
lN4001
lN4001
MOC1005
MPS5172
MPS5172
1 kO, 10%, 1 W
100 kO, 5%, 1 W
1 MO, 10%, 1/4 W
220 kO, 5%, 1/2 W
15 kO, 5%, 1/4 W
68 kO, 10%, 1 W
10 kO, 10%, 1/4 W
2N6240

Cll must be an ac rated capacitor, and with R13 provides some snubbing for the TRIAC. The values shown
for this network are intended more for inductive load
commutating dv/dt snubbing than for voltage transient
suppression. Consult the individual data sheets for the
dissipation, temperature, and surge current limits of the
TRIACs.

TRIACs AND INDUCTIVE LOADS
The TRIAC is a single device which to some extent is
the equivalent of two SCRs inverse parallel connected;
certainly this is so for resistive loads. Inductive loads
however, can cause problems for TRIACs, especially at
turn-off.
A TRIAC turns off every line half-cycle when the line
current goes through zero. With a resistive load, this coincides with the line voltage also going through zero. The
TRIAC must regain blocking-state before there are more
than 1 or 2 Volts of the reverse polarity across it - at
120 V rms, 60 Hz line this is approximately 30 /los. The
TRIAC has not completely regained its off-state charac-

Table 6.111. TRIAC Power Circuit Parts List
Voltage

120 V rms

240 V rms

rms Current Amperes

8

12

25

40

8

12

25

40

BR11

MDA102A

MDA102A

MDA102A

MDA102A

MDA104A

MDA104A

MDA104A

MDA104A

Cl', p.F
(10%, line voltage ac rated)

0.047

0.047

0.1

0.1

0.047

0.047

0.1

0.1

Rl1
(10%,lW)

39

39

39

39

39

39

39

39

R12

18

18

18

18

18

18

18

18

620

620

330

330

620

620

330

330

2N6342

2N6342A

-

2N6343

2N6343A

-

-

-

T4121B

T6420B

-

T4121D

T4121D

T6420D

(10%,1/2W)

R13
(10%,1/2W)

TR11

I Plastic
I Metal

-

2N6163

MOTOROLA THYRISTOR DEVICE DATA
1-6-20

ON/OFF 1 - - - - - - - - - - - - - - - - - - , ON
SIGNAL -

-

-

-

-

-

-

-

- - -

- - L - - - - - - - i : - - - - - - - - - OFF

LOAD CURRENT
(LAGGING LOADI
LINE VOLTAGE

.,-

dV/dt

-/

/ / "
,,'"
~~/===F=========='~~~======~==;Z~/~~--------~~~--­

LINE AND F
TRIAC VOLTAGE

....

~
;'

,....

...... - -

...-

/

TRIAC VOLTAGE

Figure 6.40. Commutating dv/dt
the next current zero. As the current is lagging the applied
voltage, the line voltage at that instant appears across
the TRIAC. It is this rate-of-rise of voltage, the commutating dv/dt, that must be limited in TRIAC circuits, usually
to a few volts per microsecond. This is normally done by
use of a snubber network RS and Cs as shown in Figure
6.41.
SCRs have less trouble as each device has a full halfcycle to turn off and, once off, can resist dv/dt to the
critical value of 50 to 100 V//Ls.

RS

Cs

CHOOSING THE SNUBBING COMPONENTS(1)
There are no easy methods for selecting the values of
RS and Cs in Figure 6.41 required to limit commutating
dv/dt. The circuit is a damped tuned circuit comprised by
RS, CS, RL and LL, and to a minor extent the junction
capacitance of the TRIAC. At turn-off this circuit receives
a step impulse of line voltage which depends on the
power factor of the load. Assuming the load is fixed,
which is normally the case, the designer can vary RS and

Figure 6.41. TRIAC with Snubber Network
teristics, but does so as the line voltage increases at the
60 Hz rate.
Figure 6.40 indicates what happens with an inductive
or lagging load. The on signal is removed asynchronously and the TRIAC, a latching device, stays on until

(1) For a more thorough discussion of snubbers, see page 1-3-9.

L....
I ....
021

LOAD
R23

..... 1

..... 1
024

R2l

+
INPUT

+

CONTROL
CIRCUIT
(SEE FIGURE 6.39(al
AND TABLE 6.111

I
-

-

~

R24

..

SCR21 ,

022

-

T

.... 1

~

~CR22

lC21

R22
023

....

I ....

Figure 6.42. SCR SSR Circuit

MOTOROLA THYRISTOR DEVICE DATA
1-6-21

LINE

•

+0---.----------.------------------,

CS. Cs can be increased to decrease the commutating
dv/dt; RS can be increased to decrease the resonant overring of the tuned circuit - to increase damping. This can
be done empirically, beginning with the values for C11
and R13 given in Table 6.111, and aiming at close to critical
damping and the data sheet value for commutating dvl
dt. Reduced temperatures, voltages, and off-going di/dt
(rate-of-change of current at turn-off) will give some
safety margin.

OCl

R31
330 k

INPUT

SCR SSR CIRCUIT
D31
lN4001

The inverse parallel connected Silicon Controlled Rectifier (SCR) pair (shown in Figure 6.42) is less sensitive
'to commutating dv/dt. Other advantages are the
improved thermal and surge characteristics of having
two devices; the disadvantage is increased cost.
The SCR power circuit can use the same control circuit
as the TRIAC Circuit shown in Figure 6.39(a). In Figure
6.42, for positive load terminal and when the control circuit is gated on, current flows through the load, D21, R21,
SCR1, D22, the gate of SCR21 and back to the line, thus
turning on SCR21. Operation is similar for the other line
polarity. R22 and R23 provide a path for the off-state
leakage of the control circuit and are chosen so that the
voltage dropped across them is less than the VGT(MIN)
of the particular SCR. R24 and C21 provide snubbing and
line transient suppression, and may be chosen from
Table 6.IV or from the C11, R13 rows of Table 6.111. The
latter values will provide less transient protection but also
less off-state current, with the capacitor being smaller.
Other circuit values are shown in Table 6.IV.
Consult the individual data sheets for packages and
dissipation, temperature, and surge current limits.
While the SCRs have much higher dv/dt commutation
ability, with inductive loads, attention should be paid to
maintaining the dv/dt below data sheet levels.

031
MPS5172

R32

330
TH31 WESTERN THERMISTOR
CORP., CURVE 2,
r-----,
650 n ± 10% @ 25°C
P/N2C6500 OR
EOUIVALENT
R33
180
TH31

Figure 6.43. TTL/CMOS Compatible Input
LED for adequate performance to 100°C. At 2 mA do not
use the CMOS output for any other function, as a LOGIC
o or 1 may not be guaranteed. Assume a forward voltage
drop of 1.1 V for the LED, and then make the Ohm's Law
calculation for the system dc supply voltage, thus defining a new value for R1.
TTL/CMOS COMPATIBLE
To be TTL compatible at 5 Volts and CMOS compatible
over 3 to 15 Volts, a constant current circuit is required,
such as the one in Figure 6.43. The current is set by the
VBE of 031 and the resistance of the R32, R33, and thermistor TH31 network, and is between 1 and 2 mA, higher
at high temperatures to compensate for the reduced
transmission efficiency of optoelectronic-couplers at
higher temperature. The circuit of Figure 6.43 gives an
equivalent impedance of approximately 50 kn. The circuit

ALTERNATE INPUT CIRCUITS
CMOS COMPATIBLE
The 1 kn resistor, R1, shown in Figure 6.39(a) and Table
6.11, provide an input that is compatible with the current
that a TTL gate output can sink. The resistor R1 must be
changed for CMOS compatibility, aiming at 2 mA in the

Table 6.1V. SCR Power Circuit Parts List
Voltage
rms Current Amperes
C21 (10%, line voltage ae rated)
021-24

120 Vrms

..

11

5

22

240 Vrms

5

49

11

22

49

SEE TEXT

lN4003

lN4003

lN4003

lN4003

lN4004

lN4004

lN4004

lN4004

R21 (10%, 1 W)

39

39

39

39

39

39

39

39

R22, 23 (10%,112 W)

18

18

18

18

18

18

18

18

III

R24
SCR21 ,22

I Plastic

I Metal

~

SEE TEXT

2N6239

2N4442

2N6402

-

2N6240

2N4443

2N6403

-

-

2N4170

2N6168

2N6172

-

2N4172

2N6169

2N6173

MOTOROLA THYRISTOR DEVICE DATA
1-6-22

R42

2 kil, 10%
1/2W

R41

C41

2 ",F

INPUT AC

R41

10%
50 V

BR41
MDA100A

120V
240 V

22 kO, 10%, 1 W
47 kil, 10%,2 W

Figure 6.44. AC Compatible Input

performs adequately over 3 to 33 Vdc and -40 to
+ 100°C. Note that though the SSR is protected against
damage from improperly connected inputs, the external
circuit is not, as 031 acts as a bypass for a wrongly connected input driver.
AC LINE COMPATIBLE
To use SSRs as logic switching elements is inefficient,
considering the availability and versatility of logic families such as CMOS. When it is convenient to trigger from
ac, a circuit such as shown in Figure 6.44 may be used.
The capacitor C41 is required to provide current to the
LED of OC1 through the zero·crossing time. An in-phase
input voltage gives the worst case condition. The circuit
gives 2 mA minimum LED current at 75% of nominal line
voltage.

INVERSE PARALLEL SCRs FOR POWER
CONTROL
TRIACs are very useful devices. They end up in solid
state relays, lamp drivers, motor controls, sensing and
detection circuits; just about any industrial full·wave application. But in high·frequency applications or those reo
quiring high voltage or current, their role is limited by
their present physical characteristics, and they become
very expensive at current levels above 40 amperes rms.
SCRs can be used in an inverse-parallel connection to

-T

bypass the limitations of a TRIAC. A simple scheme for
doing this is shown in Figure 6.45. Table 6.V. lists sug·
gested SCR's for this circuit configuration. The control
device can take any of many forms, shown is the reed
relay (Figure 6.45). TRIACs and Opto couplers can be
inserted at point A·A to replace the reed relay.
Compared to a TRIAC, an inverse-parallel configuration
has distinct advantages. Voltage and current capabilities
are dependent solely on SCR characteristics with ratings
today of over a thousand volts and several hundred
amps. Because each SCR operates only on a half-wave
basis, the system's rms current rating is V2 times the
SCR's rms current rating (see Suggested SCR chart). The
system has the same surge current rating as the SCRs
do. Operation at 400 Hz is also no problem. While turnoff time and dv/dt limits control TRIAC operating speed,
the recovery characteristics of an SCR need only be better
than the appropriate half-wave period.
With inductive loads you no longer need to worry about
commutating dv/dt, either. SCRs only need to withstand
static dv/dt, for which they are typically rated an order of
magnitude greater than TRIACs are for commutating dvl
dt.
Better reliability can be achieved by replacing the reed
relay with a low current TRIAC to drive the SCRs, although some of its limitations come with it. In the preferred circuit of Figure 6.45(b), the main requirements of

r - - --1
I

V2V

t~ ~

R;;.---(RL+RcI
IGP
WHERE IGP IS
PEAK GATE
CURRENT
RATING OF SCR

~2V

jr

FLOATING

I

I,;Jr--..........- - - - - - - - - - I G - 1 1 - . - - - ,

I

OR

A

t

I" - - - -,

o----J

GROUNDED
I LOADRL

L ___

RC
CONTROL DEVICE
(CLOSED RESISTANCEI

R

:-1_ _ _--<_IG-2-------.-----~
I
i

~

~

Figure 6.45. Use of Inverse Parallel SCRs

MOTOROLA THYRISTOR DEVICE DATA
1-6-23

SCR2

•

Table 6.V. Suggested SCRs

•

Line
Voltage
(rms)

Load
Current
(rms)

SCR

SCR Current
Rating
(rms)

120V
220 V
120V
220 V
120 V
220 V
120 V
220 V

25A
25A
35A
35A
50A
50A
75A
75A

2N5169
2N5170
2N6506
2N6507
2N3897
2N3898
MCR64-4
MCR64-6

20 A
20 A
25A
25 A
35A
35A
55A
55A

This circuit offers several benefits. One is a considerable increase in gain. This permits driving the TRIAC with
almost any other semiconductors such as linear ICs,
photosensitive devices and logic, including MOS. If necessary, it can use an optically coupled TRIAC driver to
isolate (up to 7500 V isolation) delicate logic circuits from
the power circuit (see Figure 6.46(c)). Table 6.VI. lists suggested components. Another benefit is being able to gate
the TRIAC with a supply of either polarity. Probably the
most important benefit of the TRIAC/SCR combination is
its ability to handle variable-phase applications - nearly
impossible for non solid-state control devices.

the TRIAC are that it be able to block the peak system
voltage and that it have a surge current rating compatible
with the gate current requirements of the SCRs. This is
normally so small that a TO-92 cased device is adequate
to drive the largest SCRs.
In circuits like Figure 6.45, the control devices alternately pass the gate currents IG1 and IG2 during the "a"
and "b" half cycles, respectively. ILa and ILb are the load
currents during the corresponding half cycles. Each SCR
then gets the other half cycle for recovery time. Heat
sinking can also be done more efficiently, since power is
being dissipated in two packages, rather than all in one.
The load can either be floated or grounded. If the SCRs
are not of the shunted-gate variety, a gate-cathode resistance should be added to shunt the leakage current at
higher temperatures. The diodes act as steering diodes
so the gate-cathode junctions are not avalanched. The
blocking capability of the diodes need only be as high as
the VGT of the SCRs. A snubber can also be used if conditions dictate.

INTERFACING DIGITAL CIRCUITS TO
THYRISTOR CONTROLLED AC LOADS
Because they are bidirectional devices, TRIACs are the
most common thyristor for controlling ac loads. A TRIAC
can be triggered by either a positive or negative gate
signal on either the positive or negative half-cycle of applied MT2 voltage, producing four quadrants of operation. However, the TRIAC's trigger sensitivity varies with
the quadrant, with quadrants II and III (gate signal negative and MT2 either positive or negative) being the most
sensitive anc;l quadrant IV (gate positive, MT2 negative)
the least sensitive.
For driving a TRIAC with IC logic, quadrants II and III
are particularly desirable, not only because less gate trigger current is required, but also because IC power dissipation is reduced since the TRIAC can be triggered by
an "active low" output from the IC.
There are other advantages to operating in quadrants
II and III. Since the rate of rise of on-state current of a
TRIAC (dildt) is a function of how hard the TRIAC's gate

A

A

(a). Reed Relay

(b). Low-Current TRIAC

A

(c). Optically Coupled TRIAC Driver

Figure 6.46. Control Devices
Table 6.VI. Driver TRIACs
Line
Voltage

Gate Negative Or
In Phase With
Line Voltage

Gate
Positive

Optically
Coupled

120
220

MAC97A4
MAC97A6

MAC97A4
MAC97A6

MOC3030', 3011
MOC3020, MOC3021

*Includes inhibit circuit for zero crossover firing.

MOTOROLA THYRISTOR DEVICE DATA
1-6-24

A

A

is turned on, a given IC output in quadrants II and III will
produce a greater di/dt capability than in the less sensitive
quadrant IV. Moreover, harder gate turn-on could reduce
dildt failure. One additional advantage of quadrant II and
III operation is that devices specified in all four quadrants
are generally more expensive than devices specified in
quadrants I, II and III, due to the additional testing involved and the resulting lower yields.

I

~

GATE

USING TRIACs
Once the TRIAC load requirements are defined, an appropriate device selection can be made by referring to
the TRIAC current ratings of Table 6.VII.
Two important thyristor parameters are gate trigger
current (lGT) and gate trigger voltage (VGT).
IGT (Gate Trigger Current) is the amount of gate trigger
current required to turn the device on. IGT has a negative
temperature coefficient - that is, the trigger current required to turn the device on increases with decreasing
temperature. If the TRIAC must operate over a wide temperature range, its IGT requirement could double at the
low temperature extreme from that of its 25°C rating.
It is good practice, if possible, to trigger the thyristor
with three to ten times the IGT rating for the device. This
increases its dildt capability and ensures adequate gate
trigger current at low temperatures.
VGT (Gate Trigger Voltage) is the voltage the thyristor
gate needs to ensure triggering the device on. This voltage is needed to overcome the input threshold voltage
ofthe device. To prevent thyristor triggering, gate voltage
should be kept to approximately 0.4 V or less.
Like IGT' VGT increases with decreasing temperature.
INDUCTIVE LOAD SWITCHING
Switching of inductive loads, using TRIACs, may
require special consideration in order to avoid false triggering. This false-trigger mechanism is illustrated in Figure 6.47 which shows an inductive circuit together with
the accompanying waveforms.

60 Hz
LINE

VOLTAGE
APPLIED
TO TERMINALS
AAND B

•

\

11

I

~~----------~\~-----

1 ~~~~GE

t

WITH SNUBBER
NETWORK

+-__

_ _- i _ _~ _ _

CHANGE IN
TRIAC VOLTAGE DURING
TURN·OFF Idvl

~~~_~

J ~~tT~GE

WITHOUT SNUBBER
NETWORK

UNDESIRED TRIGGERING
DUE TO FEEDBACK

Figure S.47. Inductive Load TRIAC Circuit and
Equivalent Waveforms

Table S.VII. TRIACs with Various Current Ratings
Sensitive Gate TRIACs
TRIAC

IT(rmsl

MAG97, 97A, 978
2N6068A
MAG228, A Series

As shown, the TRIAC is triggered on, at t1, by the positive gate current (IGT). At that point, TRIAC current flows
and the voltage across the TRIAC is quite low since the
TRIAC resistance, during conduction, is very low.
From point t1 to t2 the applied IGT keeps the TRIAC in
a conductive condition, resulting in a continuous sinusoidal current flow that lags the applied voltage by 90°
for this pure inductive load.
At t2, IGT is turned off, but TRIAC current continues to
flow until it reaches a value that is less than the sustaining
current (lH), at point A. At that point, TRIAC current is cut
off and TRIAC voltage is at a maximum. Some of that
voltage is fed back to the gate via the internal capacitance
(from MT2 to gate) of the TRIAC.

0.6 A
4A
SA

Non-sensitive Gate TRIACs
TRIAC
MAG91, A Series
2N6071-75
2N6342-49
2N6342A-49A
MAG15A, 15AFP Series
MAG223A, 223AFP Series
2N6160-65
2N5444-46

TT(rmsl
0.6
4
8
12
15
25
30
40

MOTOROLA THYRISTOR DEVICE DATA
1-6-25

VCC

TTL-TO-THYRISTOR INTERFACE
The subject of interfacing requires a knowledge of the
output characteristics of the driving stages as well as the
input requirements of the load. This section describes the
driving capabilities of some of the more popular TIL circuits and matches these to the input demands of thyristors under various practical operating conditions.

VCC
- - - - -SOURCE
R2 CURRENT
100
I SINK
I CURRENT
Q2
I

~CONNECTION
LOAD
FOR
CURRENT
SINK
CONDITION

I

.,,'''

•

'--~~K ...v~ut

TTL CIRCUITS WITH TOTEM-POLE OUTPUTS (e.g.
5400 SERIES)
The configuration of a typical totem-pole connected
TTL output stage is illustrated in Figure 6.48(a). This stage
is capable of "sourcing" current to a load, when the load
is connected from Vout to ground, and of "sinking" current from the load when the latter is connected from Vout
to VCC. If the load happens to be the input circuit of a
TRIAC (gate to MT 1), the TRIAC will be operating in quadrants I and IV (gate goes positive) when connected from
Vout to ground, and of "sinking" II and III (gate goes
negative) when connected from Vout to VCC.

LOAD

CONNECTION
FOR
CURRENT
SOURCE
CONDITION

~
-=
Vout

QUADRANT I-IV OPERATION
Considering first the gate-positive condition, Figure
6.48(b), the operation of the circuit is as follows:
When Vin to the TTL output stage is low (logical
"zero"), transistors 01 and 03 of that stage are cut off,
and 02 is conducting. Therefore, 02 sources current to
the thyristor, and the thyristor would be triggered on
during the Vin = 0 condition.
When Vin goes high (logical "one"), transistors 01 and
03 are on and 02 is off. In this condition depicted by the
equivalent circuit transistor 03 is turned on and its collector voltage is, essentially, VCE(sat). As a result, the
TRIAC is clamped off by the low internal resistance of

SOURCE
CURRENT
SINK CURRENT

(a)
VCC

Rl

03.
QUADRANT II-III OPERATION
When the TRIAC is to be operated in the more sensitive
quadrants II and III (negative-gate turn-on), the circuit in
Figure 6.49(a) may be employed.
With 03 in saturation, as shown in the equivalent circuit
of 6.49(b), its saturation voltage is quite small, leaving
virtually the entire - VEE voltage available for thyristor
turn-on. This could result in a TRIAC gate current that
exceeds the current limit of 03, requiring a currentlimiting series resistor, (R(lim))'
When the Vout level goes high, 03 is turned off and
02 becomes conductive. Under those conditions, the
TRIAC gate voltage is below VGT and the TRIAC is turned
off.
1k

DIRECT-DRIVE LIMITATIONS
With sensitive-gate TRIACs, the direct connection of a
TRIAC to a TIL circuit may sometimes be practical. However, the limitations of such circuits must be recognized.

(c)

Figure 6.48. Totem-Pole Output Circuit TTL Logic,
Together with Voltage and Current Waveforms,
(b) Equivalent Circuit for Triggering TRIAC with a Positive
Voltage - TRIAC-On Condition, (c) TRIAC-Off Condition

MOTOROLA THYRISTOR DEVICE DATA

1-6-26

For example:
For TTL circuits, the "high" logic level is specified as
2.4 volts. In the circuit of Figure 6.48(a), transistor Q2 is
capable of supplying a short-circuit output current (lSc)
of 20 to 55 rnA (depending on the tolerances of R1 and
R2, and on the hFE of Q2). Although this is adequate to
turn a sensitive-gate TRIAC on, the specified 2.4 volt
(high) logic level can only be maintained if the sourcing
current is held to a maximum of 0.4 rnA - far less than
the current required to turn on any thyristor. Thus, the
direct conneciton is useful only if the driver need not
activate other logic circuits in addition to a TRIAC.
A similar limiting condition exists in the Logic "0" condition of the output, when the thyristor is to be clamped
off. In this condition, Q3 is conducting and Vout equals
the saturation voltage (VCE(sat)) of Q3. TTL specifications
indicate that the low logic level (logic "0") may not
exceed 0.4 volts, and that the sink current must be limited
to 16 rnA in order not to exceed this value. A higher value
of sink current would cause (VCE(sat)) to rise, and could
trigger the thyristor on.

ROiml

~IRCUIT

DESIGN CONSIDERATIONS
Where a 5400-type TTL circuit is used solely for controlling a TRIAC, with positive-gate turn-on (quadrants
I-IV), a sensitive gate TRIAC may be directly coupled to
the logic output, as in Figure 6.48. If the correct logic
levels must be maintained, however, a couple of resistors
must be added to the circuit, as in Figure 6.50(a). In this
diagram, R1 is a pull-up which allows the circuit to source
more current during a high logical output. Its value must
be large enough, however, to limit the sinking current
below the 16 rnA maximum when Vout goes low so that
the logical zero level of 0.4 volts is not exceeded.
Resistor R2, a voltage divider in conjunction with R1,
insures VOH (the "high" output voltage) to be 2.4 V or
greater.
The resistor values may be calculated as follows:
For a supply voltage of 5 V and a maximum sinking
current of 16 rnA
R1 ;;. VCC/16 rnA ;;. 5/0.016 ;;. 312

n

Thus, 330 n, 1/4 W resistor may be used. Assuming R1
to be 330 n and a thyristor gate on voltage (VGT) of 1 V,
the equivalent circuit of Figure 6.50(b) exists during the
logical "1" output level. Since the logical "1" level must
be maintaned at 2.4 volts, the voltage drop across R2
must be 1.4 V. Therefore~
R2

LOGIC CIRCUIT

= 1.41IR = 1.4IVR1/R2 =

VCC

1.4/(2.6/330) '" 175 n

VCC

(a)

-5V

Vout
60 Hz
LINE

..J~

R2

LOGIC CIRCUIT

VEE/satl
0.4 V MAX

......_ _

Vout = 2.4 V

Rl

Rl

(a)

(bl

LOAD

Figure 6.50. Practical Direct-Coupled TTL TRIAC Circuit;
(bl Equivalent Circuit Used for Calculation of Resistor
Values

(b)

Figure 6.49. TTL Circuit for Quadrant II and III TRIAC
Operation Requiring Negative VGT, (b) Schematic
Illustrates TRIAC Turn-On Condition,
Vout
Logical "0"

=

MOTOROLA THYRISTOR DEVICE DATA

1-6-27

•

A 180 n resistor may be used for R2. If the V GT is less
than 1 volt, R2 may need to be larger.
The MAC97A and 2N6071A TRIACs are compatible
devices for this circuit arrangement, since they are guaranteed to be triggered on by 5 rnA, whereas the current
through the circuit of Figure 6.50(b) is approximately 8
rnA, (VR1/Rl)'
When the TRIAC is to be turned on by a negative gate
voltage, as in Figure 6.49(b), the purpose of the limiting
resistor R(lim) is to hold the current through transistor
Q3 to 16 rnA. With a 5 V supply, a TRIAC VGT of 1 Vand
a maximum sink current of 16 rnA
R(lim) = (VCC - VGT)/lsink = (5 - 1)/0.016'" 250
In practice, a 270 n, 1/4 W resistor may be used.

Depending on the logic family used, resistor Rl (pullup resistor) and R3 (base-emitter leakage resistor) may
or may not be required. If, for example, the logic is a
typical TTL totem-pole output gate that must supply 5
rnA to the base of the NPN transistor and still maintain
a "high" (2.4 V) logic output, then Rl and R2 are required.
If the "high" logic level is not required, then the TTL
circuit can directly source the base current, limited by
resistor R2.
VCC

n

---------,
I

OPEN COLLECTOR TTL CIRCUIT
The output section of an open-collector TTL gate is
shown in Figure 6.51(a).
A typical logic gate of this kind is the 5401 type Q2input NAND gate circuit. This logic gate also has a maximum sink current of 16 rnA (VOL = 0.4 V max.) because
of the Ql (sat) limitations. If this logic gate is to source
any current, a pull-up-collector resistor, Rl (6.51b) is
needed. When this TTL gate is used to trigger a thyristor,
Rl should be chosen to supply the maximum trigger current available from the TTL circuit (= 16 rnA, in this case).
The value of Rl is calculated in the same way and for the
same reasons as in Figure 6.50. If a logical "1" level must
be maintained at the TTL output (2.4 V min.), the entire
circuit of Figure 6.50 should be used.
For direct drive (logical "0") quadrants II and III triggering, the open collector, negative supplied (- 5 V) TTL
circuit of Figure 6.52 can be used. Resistor Rl can have
a value of 270 n, as in Figure 6.49. Resistor R2 ensures
that the TRIAC gate is referenced to MTl when the TTL
gate goes high (off), thus preventing unwanted turn-on.
An R2 value of about 1 k should be adequate for sensitive
gate TRIACs and still draw minimal current.
Circuits utilizing Schottky TTL are generally designed
in the same way as TTL circuits, although the current
sourcelsink capabilities may be slightly different.
TRIGGERING THYRISTORS FROM LOGIC GATES
USING INTERFACE TRANSISTORS
For applications requiring thyristors that demand more
gate current than a direct-coupled logic circuit can supply,
an interface device is needed. This device can be a smallsignal transistor or an opto coupler.
The transistor circuits can take several different configurations, depending on whether a series or shunt
switch design is chosen, and whether gate-current sourcing (quadrants I and IV) or sinking (quadrants II and III)
is selected. An example of a series switch, high output
(logic 1) activation, is shown in Figure 6.53. Any logic
family can be used as long as the output characteristics
are known. The NPN interface transistor, Ql, is configured in the common-emitter mode - the simplest
approach - with the emitter connected directly to the
gate of the thyristor.

I
I

I
I

I

I

1k

I

- - _ _ _ _ _ _ .J

(al

5V

Rl
G

yOU!

MTl

lOGIC CIRCUIT

(bl
Figure 6.51. Output Section of Open-Collector TTL,
(bl For Current Sourcing. A Pull-up Resistor. R1.
Must Be Added

R2

Rl
lOGIC CIRCUIT

-5V
Figure 6.52. Negative-Supplied (- 5 VI TTL Gate
Permits TRIAC Operation in Quadrants II and '"

MOTOROLA THYRISTOR DEVICE DATA
1-6-28

YOU!

VCC

When the TTL output is low, the lower transistor of the
totem-pole, 03, is a clamp, through the 560 n resistor,
across the 2N4401; and, since the 560 n resistor is relatively low, no leakage-current shunting resistor, R3, is
required.
In a similar manner, if the TTL output must remain at
"Iogic 1" level, the resistor R1 can be calculated as described earlier (R3 mayor may not be required).
For low-logic activation (logic "0"1, the circuit of Figure
6.54 can be used. In this example, the PNP-interface transistor 2N4403, when turned on, will supply positive-gate
current to the thyristor. To ensure that the high logic level
will keep the thyristor off, the logic gate and the transistor
emitter must be supplied with the same power supply.
The base resistors, as in the previous example, are dictated by the output characteristics of the logic family
used. Thus if a TTL gate circuit is used, it must be able
to sink the base current of the PNP transistor (lOL(MAX)
= 16 mAl.

R1
R2
LOGIC GATE
R3

Figure 6.53. Series Switch, High Output (Logic ''1''1
To illustrate this circuit, consider the case where the
selected TRIAC requires a positive-gate current of 100
mA. The interface transistor, a popular 2N4401, has a
specified minimum hFE (at a collector current of 150 mAl
of 100. To ensure that this transistor is driven hard into
saturation, under "worse case" (low temperature) conditions, a forced hFE of 20 is chosen - thus, 5 mA of
base current. For this example, the collector supply is
chosen to be the same as the logic supply (+ 5 VI; but
for the circuit configuration, it could be a different supply,
if required. The collector-resistor, R4, is simply

When thyristor operation in quadrants II and III is desired, the circuits of Figures 6.55 and 6.56 can be used;
Figure 6.55 is for high logic output activation and Figure
6.56 is for low. Both circuits are similar to those on
Figures 6.53 and 6.54, but with the transistor polarity and
power supplies reversed.

R4 = (VCC - VCE(sat) - VGT(typ))/IGT
= (5 - 1 - 0.91/100 mA = 40 n
A 39 ohm, 1 W resistor is then chosen, since its actual
dissipation is about 0.4 W.
If the "Iogic 1" output level is not important, then the
base limiting resistor R2 is required, and the pull-up
resistor R1 is not. Since the collector resistor of the TTL
upper totem-pole transistor, 02, is about 100 n, this resistor plus R2 should limit the base current to 5 mA.
Thus R2 calculates to
R2 = [(VCC - VBE - VGT)/5 mAl - 100 n
= [(5 - 0.7 - 0.91/0.005] 100 n
= 560

Figure 6.55 sinks current from the thyristor gate
through a switched NPN transistor whose emitter is referenced to a negative supply. The logic circuit must also
be referenced to this negative supply to ensure that transistor 01 is turned off when required; thus, for TTL gates,
VEE would be - 5 V.
In Figure 6.56, the logic-high bus, which is now ground,
is the common ground for both the logic, and the thyristor
and the load. As in the first example (Figure 6.531, the
negative supply for the logic circuit (- VEE) and the collector supply for the PNP transistor need not be the same
supply. If, for power-supply current limitations, the collector supply is chosen to be another supply (- Vce), it
must be within the VCEO ratings of the PNP transistor.

n (specified I

+5V

R2
R1
LOGIC GATE

-VEE

Figure 6.54. Low-Logic Activation with
Interface Transistor

Figure 6.55. High-Logic Output Activation

MOTOROLA THYRISTOR DEVICE DATA
1-6-29

•

R2

Rl
LOGIC GATE

•

-VEE

-VEE

Figure 6.56. Low-Logic Output Activation

Figure 6.58. Shunt-,Interface Circuit
(Quadrants I and'llI Operation)

Also, the power dissipation of collector resistor, R3, is a
function of -VCC - the lower -VCC, the lower the
power rating.
The four examples shown use gate-series swjtching to
activate the thyristor' and load (when the interface transistor is off, the load is off). Shunt-switching can also be
used ifthe converse is required, as shown in Figures 6.57
and 6.58. In Figure 6.57, when the logic output is high,
NPN transistor, 01, is turned on, thus clamping the gate
of the thyristor off. To activate the load, the logic output
goes low, turning off 01 and allowing positive gate current, as set by resistor R3, to turn on the thyristor.
In a similar manner, quadrant's II and III operation is
derived from the shunt interface circuit of Figure 6.58.

OPTICAL ISOLATORS/COUPLERS
An Optoelectronic isolator combines a light-emitting
device and a phpto detector in the same opaque package
that provides ambient light protection. Since there is no
electrical connection between input and output, and the
emitter and detector cannot reverse their roles, a Signal
can pass through the coupler in one direction only.
Since the opto-coupler provides input circuitry protection and isolation from output-circuit conditions, groundloop prevention, dc level shifting, and logic control of

high voltage power circuitry are typical areas where opto.
couplers are useful.
Figure 6~59 shows a photo-TRIAC used as a driver for
a higher-power TRIAC. The photo-TRIAC is light sensitive
and is turned on by a certain specified light density (H),
which is a function of the LED current. With dark conditions (LED current = 0) the photo-TRIAC is not turned
on, so that the only output current from the coupler is
leakage current, called peak-blocking current (lORM). The
coupler is bilateral and designed to switch ac signals.
The photo-TRIAC output current capability is, typically,
100 mA, continuous, or 1 A peak.
Any Motorola TRIAC can be used in the circuit of Figure
6.59 by using Table 6.VII. The value of R is based on the
photo-TRIAC's current-handling capability. For example,
when the MOC3011 operates with a 120 V line voltage
(approximately 175 V peak), a peak IGT current of 175 VI
180 ohm (approximately 1 A) flows when the line voltage
is at its maximum. If less than 1 A of IGT is needed, R
can be increased. Circuit operation is as follows:
Table 6.VII. Specifications for Typical Optically Coupled
TRIAC Drivers

+5V

Rl
LOGIC GATE
R2

Figure 6.57. Shunt-Interface Circuit (High-Logic Output)

Device
Type

Maximum Required LED
Trigger Current (mA)

Peak
Blocking
Voltage

MOC300S
MOC3011
MOC3011
MOC3020
MOC3021
MOC3030
MOC3031

30
15
10
30
15
30
15

250
250
250
400
400
250
250

R(Ohms)

laO
lao
lao
260
360
51
51

When an op-amp, logic gate, transistor or any other
appropriate device turns on the LED, the emitted light
triggers the photo-TRIAC. Since, at this time, the main
TRIAC is not on, MT2-to-gate is an open circuit. The 60
Hz line can now cause a current flow via R, the photoTRIAC, Gate-MT1 junction and load. This Gate-MT1 current triggers the main TRIAC, which then shorts and turns

MOTOROLA THYRISTOR DEVICE DATA
1-6-30

n

r-------,

it

I
I

I

MC3870P offers the following specifications:

....-----'\/\/\._

~

LED

I

I

PHOTO I-.......L---:-O

L ___ .!!!I~_--1

60 Hz

MTl

LINE

OPTO COUPLER
LOAD

Figure 6.59. Optically-Coupled TRIAC Driver is Used to
Drive a Higher-Power TRIAC
off the photo-TRIAC. The process repeats itself every half
cycle uAtil the LED is turned off.
Triggering the main TRIAC is thus accomplished by
turning on the LED with the required LED-trigger current
indicated in Table 6.VII.

MICROPROCESSORS
Microprocessor systems are also capable of controlling
ac power loads when interfaced with thyristors. Commonly, the output of the MPU drives a PIA (peripheral
interface adaptor) which then drives the next stage. The
PIA Output Port generally has a TTL compatible output
with significantly less current source and sink capability
than standard TTL. (MPUs and PIAs are sometimes
constructed together on the same chip and called
microcontrolliers.)
When switching ac loads from microcomputers, it is
good practice to optically isolate them from unexpected
load or ac line phenomena to protect the computer system from possible damage. In addition, optical isolation
will make UL recognition possible.
A typical TTL-compatible microcontroller, such as the

IOH = 300 !LA (VOH = 2.4 VI
IOL = 1.8 mA (VOL = 0.4 V)
VCC = 5 V
Since this is not adequate for driving the optocoupler
directly (10 mA for the MOC3011), an interface transistor
is necessary.
The circuit of Figure 6.60 may be used for thyristor
triggering from the 3870 logical "1."
The interface transistor, again, can be the 2N4401. With
10 mA of collector current (for the MOC30111 and a base
current of 0.75 mA, the VCE(satl will be approximately
0.1 V.
Rl can be calculated as in a previous example.
Specifically:
1.8 mA (maximum IOL for the 3870)
> 5 V/R1; Rl > 2.77 k
Rl can be 3 k, 1/4 W
With a base current of 0.75 mA, Rl will drop (0.75 mAl
(3 k) or 2.25 V. This causes a VOH of 2.75 V, which is
within the logical "1" range.

•

R2=[2.75 V-VSE(on)]lls = (2.75-0.75)/0.75= 2.66 k
R2 can be a 2.7 k, 114 W resistor.
R3 must limit IC to 10 mA:
R3 = [5 V - VCE(satl - VF(diodel/l0 mAl
= (5 - 0.1 - 1.21/10 mA = 370 n
Since R3 is relatively small, no base-emitter leakage
resistor is required.
Figure 6.61 shows logical "0" activation. Resistor values are calculated in a similar way.

THE CMOS INTERFACE
Another popular logic family, CMOS, can also be used
to drive thyristors.

+5V

Rl

R2

Figure 6.60. Logical "1" Activation from MC3870P
Microcomputer

Figure 6.61. Logical "0" Activation

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MOTOROLA THYRISTOR DEVICE DATA
1-6-31

•

As shown in Figure 6.62(a), the output stage of a typical
CMOS Gate consists of a P-channel MOS device connected in series with an N-channel device (drain-todrain), with the gates tied together and driven from a
common input signal. When the input signal goes high,
logical 1, the P-channel device is essentially off and conducts only leakage current (lOSS), on the order of picoamps. The N-channel unit is forward-biased and, although it has a relatively high on resistance (rOS(on)),
the drain-to-source voltage of the N-channel device (VOS)
is very low (essentially zero) because ofthe very low drain
current (VOSS) flowing through the device. Conversely,
when the .input goes low (zero), the P-channel device is
turned fully on, the N-channel device is off and the output
voltage will be very near VOO.
When interfacing with transistors or thyristors, 'the
CMOS Gate is current-limited mainly by its relatively high
on resistance, the dc resistance between drain and
source, when the device is turned on.
The equivalent circuits for sourcing and sinking current
into an external load is shown in Figures 6.62(b) and
6.62(c). Normally, when interfacing CMOS to CMOS, the
logic outputs will be very near their absolute maximum
states (VOO or 0 V) because of the extremely small load
currents. With other types of loads (e.g. TRIACs), the current, and the resulting output voltage, is dictated by the
simple voltage divider of rOS(on) and the load resistor
RL, where rOS(on) is the total series and/or parallel resistance of the devices comprising the NOR and NAND
function.
Interfacing CMOS gates with thyristors requires a
knowledge of the on resistance of the gate in the source
and sink conditions. The on-resistance of CMOS devices
is not normally specified on data sheets.
It can easily be calculated, however, from the output
drive currents, which are specified. The drive (source/
sink) currents of typical CMOS gates at various supply
voltages are shown in Table 6.VIII. From this information,

the on resistance for worst case design is calculated as
follows:
For the source condition
rOS(on)(MAX) = (VOO - VOH)/IOH(MIN)
Similarly, for the sink current condition
rOS(on)(MAX) = VOL/IOL(MIN)
Values of rOS(on) for the various condition shown in
Table 6.VIII are tabulated in Table 6.IX.

Table 6. VIII. CMOS Characteristics
Specified source/sink currents to maintain logical "1" and logical "0" levels for
various power·supply (VOOI voltages. The IOH and IOL values are used to calculate
the "on" resistance of the CMOS output.

CMOS AL Series
mA,de

Output Drive Current

CMOSCLlCP Series
mA,de

Min

Typ

Min

Typ

I(sourcel - 10H
VOO = 5 V: VOH = 2.5 V
VOO = 10 V; VOH = 9.5 V
VOO = 15 V; VOH = 13.5 V

-0.5
-0.5

-1.7
-0.9
-3.5

-0.2
-0.2

-1.7
-0.9
-3.5

I(sinkl - IOl
VOO = 5 V; VOL = 0.4 V
VOO = 10 V; Val = 0.5 V
VOO = 15 V; VOL = 1.5 V

0.4
0.9

7.8
2
7.8

0.2
0.5

7.8
2
7.8

Table 6.1X
Calculated CMOS On Resistance Values For Current
Sourcing and Sinking at Various VDD Options

Operating Conditions

Output Resistance, rOSlon)
Ohms
Typical

Maximum

1.7 k
500
430

12.5 k
2.5 k

500
420
190

2k
1k

Source Condition
VDD

VDD

dj:'"''

Yin

D

= 5V
10V
15V

-

Sink Condition
P·CHANNEL
rOS(onl
Vout

VOO

RL

= 5V
10V
15V

-

Vout

q",.,NEL

(a)

VOO

VDD

::-

N·CHANNEL
rOSlonl

RL

(b)

-=

(c)

Figure 6.62. Output Section of a Typical CMOS Gate,
(b) Equivalent Current-Sourcing Circuit is Activated
when Vin goes Low, Turning the P-Channel Device
Fully On, (c) Equivalent Current Sinking Circuit is
Activated when the Input Goes High and Turns the
N-Channel Device On

It is apparent from this table that the on resistance
decreases with increasing supply voltage.
Although the minimum currents are now shown on the
data sheet for the 15 V case, the maximum on resistance
can be no greater than the 10 V example and, therefore,
can be assumed for worst case approximation to be 1
and 2.5 kohms for sink-and-source current cases,
respectively.
The sourcing on resistance is greater than the sinking
case because the difference in carrier mobilities of the
two channel types.
Since rOS(on) for both source and sink conditions var-

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MOTOROLA THYRISTOR DEVICE DATA
1-6-32

ies with supply voltage (VOO), there are certain drive
limitations. The relative high rOS(on) of the P-channel
transistor could possibly limit the direct thyristor drive
capability; and, in a like manner, the N-channel rOS(on)
might limit its clamping capability. With a 10 or 15 V
supply, the device may be capable of supplying more
than 10 mA, but should be limited to that current, with
an external limiting resistor, to avoid exceeding the reliable limits of the unit metalization.

DC MOTOR CONTROL WITH THYRISTORS
In order to control the speed of a dc series field motor
at different required torque levels, it is necessary to adjust
the voltage applied to the motor. For any particular applied voltage the motor speed is determined solely by
the torque requirements and top speed is reached under
minimum torque conditions. When a series motor is used
as a traction drive for vehicles, it is desirable to control
the voltage to the motor to fit the various torque requirements of grades, speed and load. The common method
of varying the speed of the motor is by inserting resistance in series with the motor to reduce the supplied
voltage. This type of motor speed control is very inefficient due to the 12R loss, especially under high current
and torque conditions.
A much more efficient method of controlling the voltage applied to the motor is the pulse width modulation
method shown in Figure 6.63. In this method, a variable
width pulse of voltage is applied to the motor at the same
rate to proportionally vary the average voltage applied
to the motor. A diode is placed in parallel with the inductive motor path to provide a circuit for the inductive
motor current and prevent abrupt motor current change.
Abrupt current changes would cause high induced voltage across the switching device.

BATTERY

DIODE
CURRENT

VM = BACK EMF
OF MOTOR
LM = MOTOR
INDUCTANCE
RM = MOTOR
RESISTANCE

AVERAGE

SCR DC MOTOR CONTROL
SCRs offer several advantages over power transistors
as semiconductor switches. They require less driver
power, are less susceptible to damage by overload currents and can handle more voltage and current. Their
disadvantages are that they have a higher power dissipation due to higher voltage drops and the difficulty in
commutating to the off condition.
The SCR must be turned off by either interrupting the
current through the anode-cathode circuit or by forcing
current through the SCR in the reverse direction so that
the net flow of forward current is below the holding current long enough for the SCR to recover blocking ability.
Commutation of the SCR in high current motor control
circuits is generally accomplished by discharging a capacitor through the SCR in the reverse direction. The
value of this capacitor is determined approximately from
the following equation:

Where:
Cc = value of necessary com mutating capacitance

FJ--Pt
AVERAGE

MOTOR
CURRENT

The circulating current through the diode decreases
only in response to motor and diode loss. With reference
to Figure 6.63, it can be seen that the circulating diode
current causes more average current to flow through the
motor than is taken from the battery. However, the power
taken from the battery is approximately equal to the
power delivered to the motor, indicating that energy is
stored in the motor inductance at the battery voltage level
and is delivered to the motor at the approximate current
level when the battery is disconnected.
To provide smooth and quiet motor operation, the current variations through the motor should be kept to a
minimum during the switching cycle. There are limitations on the amount of energy that can be stored in the
motor inductance, which, in turn, limits the power delivered to the motor during the off time; thus the off time
must be short. To operate the motor at low speeds, the
on time must be approximately 10 percent of the off time
and therefore, a rapid switching rate is required that is
generally beyond the capabilities of mechanical switches.
Practical solutions can be found by the use of semiconductor devices for fast, reliable and efficient switching
operations.

~---

Figure 6.63. Basic Pulse Width Modulated
Motor Speed Control

T q = turn-off time of the SCR
IA = value of anode current before commutation
Vc = voltage of Cc before commutation
This relationship shows that to reduce the size of Cc,
the capacitor should be charged to as high a voltage as
possible and the SCR should be selected with as Iowa
turn-off time as possible.
If a 20 microsecond turn-off time SCR is com mutated
by a capacitor charged to 36 volts, it would take over 110
p.F to turn off 200 amperes in the RC commutating circuit
of Figure 6.64. If a 50 cycle switching frequency is desired,

:~ "

MOTOROLA THYRISTOR DEVICE DATA
1-6-33

•

•

Figure 6.64. Speed Control with Resistive Charging

the value of R1 would be approximately 5 ohms to allow
charging time with an on duty cycle of 10 percent. The
value of this resistor would give approximately 260 watts
dissipation in the charging circuit with 90 percent off duty
cycle.
If the resonant charging commutating circuitry of
Figure 6.65 is used, the capacitor is reduced to approximately 55 p.F. In this circuit, SCR3 is gated on at the same
time as SCR1 and allows the resonant charging of Cc
through Lc to twice the supply voltage. SCR3 is then
turned off by the reversal of voltage in the resonant circuit
before SCR2 is gated on. It is apparent that there is very
little power loss in the charge circuit depending upon the
voltage drop across SCR3 and the resistance in Lc.
If the com mutating capacitor is to be reduced further,
it is necessary to use a transformer to charge the capacitor to more than twice the supply voltage. This type of
circuit is illustrated by the transformer charge circuit
shown in Figure 6.66. In this circuit the capacitor can be
charged to several times the supply voltage by transformer action through diode 01 before commutating
SCR1' The disadvantage ofthis circuit is in the high motor
current that flows through the transformer primary
winding.
HEAVY DUTY MOTOR CONTROL WITH SCRs
Another advantage of SCRs is their high surge current
capabilities, demonstrated in the motor drive portion of
the golf cart controller shown in Figure 6.67. Germanium
power transistors were used because of the low satura-

Figure 6.65. Speed Control with Inductive Charging

Figure 6.66. SCR Motor Control with
Transformer Charging
tion voltages and resulting low static power loss. However, since switching speeds are slow and leakage currents are high, additional circuit techniques are required
to ensure reliable operation:
1) The faster turn-on time of the SCR (09) over that of
the germanium transistors shapes the turn-on load
line.
2) The parallelled output transistors (03-08) require
a 6 V reverse bias.
3) The driver transistor 02 obtains reverse bias by
means of diode 04.
To obtain the 6 V bias, the 36 V string of 6 V batteries
are tapped, as shown in the schematic. Thus, the motor
is powered from 30 V and the collector supply for 02 is
24 V, minimizing the dissipation in colliector load resistor
R1.
Total switching loss in switch mode applications is the
result of the static (on-state) loss, dynamic (switching)
loss and leakage current (off-state) loss. The low saturation voltage of germanium transistors produces low
static loss. However, switching speeds of the germanium
transistors are low and leakage currents are high. Loss
due to leakage current can be reduced with off bias, and
load line shaping can minimize switching loss. The turnoff switching loss was reduced with a standard snubber
network (05, C1, R2) see Figure 6.67.
Turn-on loss was uniquely and substantially reduced
by using a parallel connected SCR (across the germanium
transistors) the MCR265-4 (55 Arms, 550 A surge). This
faster switching device diverts the initial turn-on motor
load current from the germanium output transistors, reducing both system turn-on loss and transistor SOA
stress.
The main point of interest is the power switching portion of the PWM motor controller. Most of the readily
available PWM ICs can be used (MC3420, MC34060,
TL494, SG1525A, UA78S40, etc.), as they can source at

MOTOROLA THYRISTOR DEVICE DATA
1-6~34

least a 10 mA, + 15 V pulse for driving the following
power MOSFET.
Due to the extremely high input impedance of the
power MOSFET, the PWM output can be directly connected to the FET gate, requiring no active interface circuitry. The positive going output of the PWM is power
gained and inverted by the TMOS FET Q1 to supply the
negative going base drive to PNP transistor Q2. Diode 01
provides off-bias to this paraphase amplifier, the negative
going pulse from the emitter furnishing base drive to the
six parallel connected output transistors and the positive
going collector output pulse supplying the SCR gate trigger coupled through transformer n.
Since the faster turn-on SCR is triggered on first, it will
carry the high, initial turn-on motor current. Then the
slower turn-on germanium transistors will conduct
clamping off the SCR, and carry the full motor current.
For the illustrated 2HP motor and semiconductors, a peak
exponentially rising and falling SCR current pulse of 120
A lasting for about 60 /kS was measured. This current is
well within the rating of the SCR. Thus, the high turn-on
stresses are removed from the transistors providing a
much more reliable and efficient motor controller while
using only a few additional components.

DIRECTION AND SPEED CONTROL FOR MOTORS
For a shunt motor, a constant voltage should be applied
to the shunt field to maintain constant field flux so that

the armature reaction has negligible effect. When constant voltage is applied to the shunt field, the speed is a
direct function of the armature voltage and the armature
current. If the field is weak, then the armature reaction
may counterbalance the voltage drop due to the brushes,
windings and armature resistances, with the net result of
a rising speed-load characteristic.
The speed of a shunt-wound motor can be controlled
with a variable resistance in series with the field or the
armature. Varying the field current for small motor provides a wide range of speeds with good speed regulation.
However, if the field becomes extremely weak, a rising
speed-load characteristic results. This method cannot
provide control below the design motor speed. Varying
the resistance in series with the armature results in
speeds less than the designed motor speed; however,
this method yields poor speed regulation, especially at
low speed settings. This method of control also increases
power dissipation and reduces efficiency and the torque
since the maximum armature current is reduced. Neither
type of resistive speed control is very satisfactory. Thyristor drive controls, on the other hand, provide continuous control through the range of speed desired, do not
have the power losses inherent in resistive circuits, and
do not compromise the torque characteristics of motors.
Although a series-wound motor can be used with either
dc or ac excitation, dc operation provides superior performance. A universal motor is a small series-wound mo-

•

+36V
OFF BIAS
6

25W
Q9

MeR
2654

lNll63
D4

27
+15V
+101J!'

1:: 25V

0.01 p.F

01
0.6
- ...... ~OOW
\

70

03
1N914

FORWARD REVERSE

J

-

./

-=

/

~
-=-

+15V

+18V

\

PWM

-=

1N1163

1N914
20
SOW
Rl

I

-=
MTP12NOB

1
1

lN4744

-=

I
-=

Figure 6.67. PWM DC Motor Controller Using SCR
Turn..()n Feature

~~~~~~~z~.·~~"~~HBRB"""""""""~
MOTOROLA THYRISTOR DEVICE DATA
1-6-35

•

tor designed to operate from either a dc or an ac supply
ofthe same voltage. In the small motors used as universal
motors, the winding inductance is not large enough to
produce sufficient current through transformer action to
create excessive commutation problems. Also, highresistance brushes are used to aid commutation. The
characteristics of a universal motor operated from alternating current closely approximate those obtained for a
dc power source up to full load; however, above full load
the ac and dc characteristics differ. For a series motor
that was not designed as a universal motor, the speedtorque characteristic with ac rather than dc is not as good
as that for the universal motor. At eight loads, the speed
for ac operation may be greater than for dc since the
effective ac field strength is smaller than that obtained
on direct current. At any rate, a series motor should not
be operated in a no-load condition unless precaution is
are taken to limit the maximum speed.

capacitor charges to the breakdown voltage of zener
diode 05 through potentiometer R1 and resistor R2. As
the capacitor voltage exceeds the zener voltage, the zener
conducts, delivering current to the gate of SCR 05. This
turns 05 on, which discharges C1 through either T1 or
T2 depending on the position of 51. This creates the desired triggering pulse. Once 05 is on, it remains on for
the duration of the half cycle. This clamps the voltage
across C1 to the forward voltage drop of 05. When the
supply voltage drops to zero, 05 turns off, permitting C1
to begin charging when the supply voltage begins to
increase.
The speed of the motor can be controlled by potentiometer R1. The larger the resistance in the circuit, the
longer required to charge C1 to the breakdown voltage
of zener 05. This determines the conduction angle of
either 01 and 04, or 02 and 03, thus setting the average
motor voltage and thereby the speed.

SERIES-WOUND MOTORS
The circuit shown in Figure 6.68 can be used to control
the speed and direction of rotation of a series-wound dc
motor. Silicon controlled rectifiers 01-04, which are connected in a bridge arrangement, are triggered in diagonal
pairs. Which pair is turned on is controlled by switch 51
since it connects either coupling transformer T1 or coupling transformer T2 to a pulsing circuit. The current in
the field can be reversed by selecting either SCRs 02 and
03 for conduction, or SCRs 01 and 04 for conduction.
Since the armature current is always in the same direction, the field current reverses in relation to the armature
current, thus reversing the direction of rotation of the
motor.
A pulse circuit is used to drive the SCRs through either
transformer T1 or T2. The pulse required to fire the SCR
is obtained from the energy stored in capacitor C1. This

SHUNT·WOUND MOTORS
If a shunt-wound motor is to be used, then the circuit
in Figure 6.69 is required. This circuit operates like the
one shown in Figure 6.68. The only differences are that
the field is placed across the rectified supply and the
armature is placed in the SCR bridge. Thus the field current is unid'irectional but armature current is reversible;
consequently the motor's direction of rotation is reversible. Potentiometer R1 controls the speed as explained
previously.
RESULTS
Excellent results were obtained when these circuits
were used to control 1115 hp, 115 V, 5,000 r/min motors.
This circuit will control larger, fractional-horsepower motors provided the motor current requirements are within
the semiconductor ratings. Higher current devices will

••

•
14) lN4722
OR
MDA2503

AC
LINE

.--~F-----'-"'~----"

T1

T2
5 JLF
75 V

ARMATURE

+
05
2N5062

Cl

•

••
Tl

R3
1k

12)
SPRAGUE
l1Z13

T2

Figure 6.68. Direction and Speed Control for Series-Wound or Universal Motor

MOTOROLA THYRISTOR DEVICE DATA
1-6-36

02 (411 N4722 OR MDA2503

ac
LINE

02

04

05
2N5062

••
T1 AND T2 ARE SPRAGUE 11Z13
01 THRU 04 - 2N4172

Figure 6.69. Direction and Speed Control for Shunt-Wound Motor

permit control of even larger motors, but the operation
of the motor under worst case must not cause anode
currents to exceed the ratings of t\1e semiconductor.

UNIJUNCTION TRANSISTOR APPLICATIONS
USING RELAXATION OSCILLATORS
Most UJT oscillator circuits employ the basic relaxation
oscillator circuit in some way or another. As mentioned
previously, either the output at base-one, base-two, or
the emitter can be utilized in order to fulfill a specified
requirement.

voltage pulse will therefore appear at base-two, and this
waveform is shown in Figure 6.71(b).
When the voltage at the emitter has decreased to VO,
a voltage approximately equal to the valley voltage when
R1 is purely resistive, the UJT will turn off if RE meets
certain conditions. CE will start to charge up again, and
the cycle repeats. The waveform that appears at the emitter is shown in Figure 6.71(c).
In order for the above sequence of events to take place,
RE has to meet certain conditions. What these conditions
are can best be explained by means of the emitter characteristic curve in Figure 6.72. (This curve is not drawn
to scale in order to show more detail.)

THE BASIC UJT RELAXATION OSCILLATOR
CIRCUIT

V1

The UJT relaxation oscillator, the basic building block
in most UJT timer and oscillator circuits (Figure 6.70),
operates as follows:
When power is applied, the capacitor CE charges exponentially through the resistor RE until the voltage on the
capacitor equals the emitter firing voltage Vp. At this
voltage, the emitter base-one junction becomes forward
biased and the emitter characteristic goes into the negative resistance region. The capacitor CE discharges
through the emitter and a positive going pulse will be
available at base-one. This pulse is shown in Figure
6.71(a) for a circuit having
RE = 10 kn, CE = 0.01 ILF, R2 = 200 n, R1 = 47 n, and
V1 = 20 V.
Prior to firing, a current IS2 is flowing from base-two
to base-one. When emitter current starts to flow, this
current will increase to IS2(mod) since the resistance
from base-two to ground is decreasing. A negative going

l

POSSIBLE

\ OUTPUTS

Figure 6.70. Basic UJT Relaxation Oscillator

'.:, .

MOTOROLA THYRISTOR DEVICE DATA
1-6-37

"'.

;-, ~:.

":

intersecting the characteristic curve in the cutoff region,
as illustrated by load line one, would keep the UJT from
ever firing.
Having selected RE < RE(maxl, the UJT will turn on,
and CE will discharge through the emitter. If RE is too
small, however, and allows an emitter current larger than
the valley current IV to flow, the UJT will not turn off. A
stable state in the saturation region will result, and the
load line will intersect the emitter characteristic curve
somewhere to the right of the valley point. Load line 2
in Figure 6.76 intersecting the characteristic curve at P2
illustrates this condition.
The minimum RE that can be used in order to assure
oscillation can be defined by this formula:

5 V/oiv

•

OV ~

k

2OJ.IS.IDiv

(al. Base-One Waveform

RE>

5 V/oiv

1I

V1 - Vv
IV
= RE(min)**

(2)

where Vv is the valley voltage.
An emitter resistance selected to meet the requirements in equations (1) and (2) will result in a load line
which intersects the characteristic curve somewhere in
the negative resistance region. An example is given by
load line 3, intersecting the curve at P3. The theory explaining the turn-off will be given in the appendix.
The time required for a complete period can be calculated. The voltage on CE at any time is given by the
equation:

V

OV
20 p.sIDlv

(bl. Base-Two Waveform

5 VlDiv

OV

~

V

.....

V

V

~

~

~ lCE

V

V

VE
V1

20 J.IS.IDiv
(cl. Emitter Waveform

SATURATION
CUTOFF
REGION

Figure 6.71. UJT Oscillator Waveforms

---iilto~--- ,..o--RE_G_IO_N.........

Vp

The emitter capacitor CE, will charge until the emitter
voltage is equal to Vp. At this point on the characteristic
curve, peak point emitter current Ip will be flowing, and
in order to fire the unijunction, the value of emitter resistor RE must be small enough to allow a current somewhat
larger than Ip to flow. RE must, therefore, meet the following requirement:
RE <

V1 - Vp
I
= RE(max)
p

LOAD
LINE 1

(1)

where V1 is the applied bias voltage.
Referring to Figure 6.72, this means that a load line

Ie

Figure 6.72. UJT Emitter Characteristic Load Lines

MOTOROLA THYRISTOR DEVICE DATA
1-6-38

VCE = Vv

+

(V1 - VV) (1 - e-tiRECE)

Substituting VCE = Vp = Vo
Vo

+ 1/VB2B1

= Vv

(3)

+ 1/VB2B1 *

+ (V1 - VV) (1 - e-tiRECE)

(4)

--r-o-......-o + 24

10 k

Solving this equation for t will give the time to charge
CE from Vv to Vp.
V1 - Vv
(5)
- Vo - 1/VB2B1
A complete period T also includes the switching time
of the UJT and the formula for T becomes:
t = RE CE 1n V1

2N4853
B1

V1 - Vv
+ to n + t 0 ff (6)
- Vo - 1/VB2B1
The following simplifications can be made in this
formula:
The turn-on time is generally much smaller than toff
and can be omitted. V1 is also usually an order of magnitude larger than Vo or VV. and when R1 and R2 are
small. VB2B1 "" V1. Equation (6) can therefore be written:
T = RE CE 1n V1

1

T"" RE CE 1n 1 _ 1/

+ toff

•

(7)

Figure 6.73. A Simple Time Delay Circuit

To summarize: The condition for stable operation' of
the relaxation oscillator is that RE must be chosen such
that the load line intersects the emitter characteristic in
the negative resistance region. The approximate period
can be found from Equation (7).

A SIMPLE TIME DELAY
The basic building block can be used without modification in simple time delay circuits. One such circuit is
shown in Figure 6.70. The circuit operation is as follows:
The circuit values are determined by means of the
equations developed previously. The value of the emitter
resistor RE is chosen by means of Equations (1) and (2)
to meet the requirements.
RE(min) < RE < RE(max)
When RE = 10 MO. CE = 10 JLF. and 1/ = 0.8. the time
required for one complete period can be found from
Equation (7):
T"" RECE 1n _1_ = 10 .106x10 .10- 6x1n __
1_
1 - 1/
1 - 0.8
T "" 160 seconds
R2 is selected as 1 kO to provide maximum temperature
compensation with the UJT used. The theory of temperature compensation is given in the appendix.
After the first cycle. the relay will normally be energized. When push-button S1. being normally closed is
activated. the SCR turns off. the relay is de-energized.
and power is applied to the relaxation oscillator and the
load. After a time delay varying from less than a second

*In practice. the variation of the emitter voltage in the
neighborhood of the valley point is so small that in order
to assure turn-off. RE should be selected two to three
times larger than RE(min).

to approximately 2.5 minutes. as determined by the setti'ng of the 10 MO pot. the unijunction will fire and turn
on the SCR. The relay will energize and power is removed
from the oscillator and the load. The relay K1 will stay
energized until the push button S1 is pushed again.
As shown in the example. the UJT trigger output from
Base 1 directly drives the gate of the SCR. However.
where isolation between the UJT trigger. or any other
type of trigger. and the thyristor power circuit is required.
then a simple pulse transformer interfacing the two elements will suffice.

TEMPERATURE STABILIZATION OF THE PEAK
POINT VOLTAGE
Practically all UJT characteristics are temperature
dependent. The interbase resistance rBB and emitter
reverse current lEO increase. while the peak. valley voltage. current. intrinsic standoff ratio .,. and the junction
diode drop decrease with increasing temperature.
The peak point voltage is given by the equation:
Vp = Vo + "VB2B1
(10)
Since both Vo and., decrease with temperature. Vp will
also decrease. This is. of course. a very undesirable condition in many applications. and particularly in timers and
oscillator circuits. It has been found. however. that the
change in Vp can be compensated for by adding a resistor
R2 in series with the base two terminal.
If this resistor is selected properly. Vp can be made to
vary less than 1% over a 50°C temperature variation. An
equivalent circuit for the UJT in the cutoff region. including the external resistor R2. is shown in Figure 6.74. The
peak point voltage is now given by:

~~~~~~~~~~~~~~~~""""~"""III
MOTOROLA THYRISTOR DEVICE DATA
1-6-39

If a high degree of accuracy is required, however, a
final adjustment of R2 should be made in the actual operating circuit.
Frequency variation as a function of temperature for a
typical annular UJT is shown in Figure 6.75. Temperature
curves for several values of R2 ranging from 250 ohms
to 3 kohms are shown, and an R2 of approximately 1.5
kohms can be seen to compensate very well from - 5°C
to + 85°C. A smaller resistor should be used for operation
below -5°C.

~
J,

/' ::-r

E~~f---""AjJB2Bl
fBl

a

Bl

Figure 6.74. Electrical Equivalent Circuit for the UJT
with the External Compensating Resistor R2. The
Equivalent Circuit is Valid in the Cutoff Region Only.
'IV 1r BB
(11)
= Vo + ---=-...,..
P
(rBB + R2)
When temperature is increased, Vo decreases, and for
Vp to remain unchanged, the second term in Equation
(6), representing the voltage at point A, must increase.
Since rBB will increase and R2 will remain unchanged,
the second term in the equation will indeed increase.
It would seem like a relatively simple task to calculate
R2 from Equation (11) by taking the derivative of Vp with
dv
.
dt p equa I to zero, an d
respect to temperature, setting
V

solve for R2. This procedure would result in the following
equation for R2.
'[
R2 = 1/2 -(2rBB

(2 rBB

K2
K3
, + V, r BB K,)
+ V1 'I K

K2

±

K3

K3]

+ V, 'I K, + V, rBBK1 - 4 rBB (, + V'K1)

(12)
dvo

where K,

-2.7 mVrC

dt
d rBB

K2 =

Cit

=

rBBN· 0.77
100

K = d'l = 'IN, 0.06
3
dt
100

rc

rc
1.2 ,------,----,----,--~-~~-__r_-r___.-__,

and the sUbscript N denotes the value at 25°C.
When solving this equation, it would also have to be
taken into account that rBB is voltage dependent and
when VB2B1 is increased by one volt, rBB increases 1.2%
(based on the value of rBB at VB2B1 = 3 V). Furthermore,
the temperature dependency of rBB affects not only
terms containing K2 but also terms containing rBB itself.
In equation (12)"fBB, K1, K2, and 'I are voltage dependent and VB2B1 is dependent on R2. This interdependency results in a very complex equation that is difficult
to solve, which in turn greatly reduces the usefulness of
Equation (12).
In most applications, the variation predominates and
can be compensated for by choosing R2 as follows:
R2 = 15% rBB

DYNAMIC OPERATING PATHS
In order to determine the dynamic operating path of
the relaxation oscillator, the circuit in Figure 6.76 can be
used. Figure 6.80(b) shows the emitter characteristic
curve for VB2B1 = 20 volts with the dynamic operating
path of the oscillator shown with dotted lines. (V1 is
adjusted for VB2B1 = 20 volts.)
At the beginning of a cycle, CE will start to charge from
point A on the characteristic curve. At point B, where the
voltage of CE equals V P' the UJT will fire and the characteristic curve goes into the negative resistance region.
The voltage on the capacitor cannot change instantaneously, however, and the dynamic operating path will
move from 'point B to point C. The time required to move
from B to C is approximately 1 /Ls. From point C, the
operating path follows an essentially straight line to point
D, which is approximately equal to the valley point. This
straight line has a slope of approximately 32 volts/ampere
or 32 ohms, and is composed of R1 and the UJT emitter
base one saturation resistance. There is not enough emitter current available to sustain operation at point 0, and
the operating path tries to follow the characteristic curve
to the point where it is intersected by the load line determined by RE. If the emitter circuit of the UJT were
purely resistive (Le. no capacitor CE), this intersection
point would be a stable operating point. To reach this
point, however, the emitter voltage must increase. The
resistance from emitter to base-one will also increase,
and the emitter current will decrease somewhat. When
the emitter voltage increases, however, current starts to

(13)

is:t'l%;,,~:t~t~.~,.;:£~~i~it~~;; ~:y'tH1i t 1 ' j ~l ~; ,

1.11:::--+-""""1:::--+-+

0,8 ~--=--::------';---f::--=---!::-----:!;--:!::--=-----:-:!
-55
-35 -20 -5
10
25
40
55
70
85 100
AMBIENT TEMPERATURE IN °C

Figure 6.75. Frequency versus Temperature for a UJT
Relaxation Oscillator Circuit. (Frequency is Normalized
to 25°C and R2 is a Variable Parameter)

#!~rr.: H~; ,~..x~HtH~~ J;~~Ii~ ;~t,~t=«ttM'~

MOTOROLA THYRISTOR DEVICE DATA
1-6-40

20
/

18
16

I

B

-

w

.'

~

(j)

"

~

"
.£ ~
AD

"

-

100

~

:J;!"' 12
w

- -

~
a

/

:>
a::
~

~

=60

l-

200
300
400
EMITTER CURRENT IR ImAI
(a)

7CE

r-- .......... "'\

i}

<:>

II STATIC EMhTER tHARACTERISTIC

.L- I--

14

'::;

/

:=

" "-

a

1"-.'= 32 n

t,J$

a::

16

,,'

~12

-1\ -

-- "'IC

g

~ 10

b

18

-

~ 14

20

DY~AMIC ~PER~TING P~TH

l10

lp.F
I

I

..j. ~ CE = O.lp,F_

0.05 p,F
,
1-) ~ r-..... CECE ,== O.Olp,F
I

I

.,L- I--

V
1/

t::

a'j

/;

500

V

VB2Bl = 20V _
I-Rl = 270

/

/
10 k

o
o

1k

100

200
300
EMITTER CURRENT IE ImAI

400

500

Figure 6.77(a). Dynamic Operating Path versus Emitter
Capacitance (Circuit Figure 6.80)
20
VB2Bl

(b)

V

Figure 6.76. Determining the Dynamic Operating Path
16

flow into the capacitor and the emitter current is reduced
more than that required by the characteristic curve. So,
with a capacitor CE in the emitter circuit, there are no
stable operating points in the negative resistance region,
and from point D, therefore, the operating path goes to
point A again and the cycle repeats. It takes about 180
JLS to traverse the path from point C to point A in the
circuit shown.
The shape of the dynamic operating path is determined
by the capacitor CE, the bias voltage, and the resistor R1.
Figure 6.77 shows operating paths for different values of
CE while 6.77(b) shows operating paths for fixed CE but
varying interbase voltage.
When an inductive load, like a relay coil, for example,
is substituted for R1, the dynamic operating path will be
somewhat different. Figure 6.78(a) shows a relaxation
oscillator having a pulse transformer instead of R1, and
Figure 6.78(b) shows the resulting dynamic operating
path. An important difference here is that the emitter no
longer ceases to conduct when valley voltage is reached
but goes down to less than 0.5 volts before turning off.
Figure 6.78(c) shows how the turn-off voltage is dependent on the bias voltage .
. .~.

VB2Bl

(j)

a

12

:>
w
<:>
«
'::;

10

a::
~

8

~
w

/
VB2Bl

::;;
w

VB2Bl

= 10

/

jfT

/

/

J

ICE

= lp,FI

V

/
100

200
JOO
EMITTER CURRENT IE ImAI

400

500

Figure 6.77(b). Dynamic Operation Path versus
Interbase Voltage (Circuit Figure 6.80)

'.

MOTOROLA THYRISTOR DEVICE DATA
1-6-41

V

= 15 V 7

a>

t::

~

= 20V

14
'::;

lJ

= 25 V

18

•

BATTERY CHARGER USING A UJT
The battery charger circuit shown in Figure 6.79(a) is
a very simple circuit utilizing the relaxation oscillator.
The circuit will not work unless the "battery to be
charged is connected with proper polarity. The battery
voltage controls the charger and when the battery is fully
charged, the charger will not supply current to the
battery.
The circuit operation is as follows: The battery charging
current is obtained through the SCR when it is triggered
into the conducting state by the UJT relaxation oscillator.
The oscillator is only activated when the battery voltage
is low. VB2B1 of the UJT is derived from the voltage of
the battery to be charged, and since Vp = Vo + 71VB2B1,
the higher VB2B1, the higher Vp. When Vp exceeds the
breakdown voltage of the zener diode Z1, the UJT will
cease to fire and the SCR will not conduct. This indicates
that the battery has attained its desired charge as set by
R2.
The relaxation oscillator itself and the waveforms associated with the operation is shown in Figure 6.79(b). (The
voltage increase will tend to change the pulse repetition
rate, but this is not important, since the battery will tend
to average the output.)

10 k

•

PULSE
TRANSFORMER

'INDUCTANCE = 230 p.H

Figure 6.78Ia). A Relaxation Oscillator with
Inductive* Load

20
18

!3

16

~

14

>

w
w

12

(!)

~

10

~

8

r-- .......

'\

- -

a::

~
::E
w

I'-..

~

4
2

i...-- I-- r-100

I-- '"""

200

300

-J
500

400

FEEDBACK CIRCUITS
The circuits described so far have been manual control circuits; i.e., the power output is controlled by a
potentiometer turned by hand. Simple feedback circuits
may be constructed by replacing RT with heat or lightdependent sensing resistors; however, these circuits
have no means of adjusting the operating levels. The
addition of a transistor to the circuits allows complete
control.
Figure 6.81 shows a feedback control using a sensing
resistor for feedback. The sensing resistor may respond

EMITTER CURRENT IE (mA)

Ib)

0.9

!3

O.B
~ 0.7

-

~ 0.6
~ 0.5

~
~

ifi

0.2

= 20V ......... I-.....

~

""/

0.4
0.3

/

MCR3818

/ 'hV
25 V .........
/ /. V
30V.......,
K2 V
/"
./ "'/ V

VB2Bl

r-

RS'

_V

-

/. '7'

T1- PRIMARY = 30 TURNS #22
SECONDARY = 45 TURNS #22
CORE = FERROXCUBE 203 F 181·3C3
• RS - SERIES RESISTANCE TO LIMIT CURRENT THROUGH SCR.
MCR 2818-3 IS RATED AT 20 AMPS rms.

~ :;..'

0.1

o

W

W

30
40
~
~
M
EMITTER CURRENT IE (rnA)

00

00

~

Figure 6.79hi). A 12 Volt Battery Charger Control
120 Amps rms Max)

Ie)

MOTOROLA THYRISTOR DEVICE DATA
1-6-42

RE

+

VBl B2
I

BATIERY
CHARGING

I

BATIERY
-1- CHARGED
-TIME

UJT PEAK POINT VOLTAGE

ZENERVOUAGE

_---~----------

~

VCE - - - - - _ - -

•

TIME
SCR
CONDUCTS

I
I

SCR

- 1 - NONCONDUCTING
TIME

voltage divider and the base of 01 with the proper polarity. In this case, the voltage divider would be a potentiometer to adjust the operating point. Such a circuit is
shown in Figure 6.82.
In some cases, average load voltage is the desired feedback variable. In a half wave circuit this type of feedback
usually requires the addition of a pulse transformer,
shown in Figure 6.83. The RC network, R" R2, C, averages load voltage so that it may be compared with the
set point on RS by 01. Full wave operation of this type
of circuit requires dc in the load as well as the control
circuit. Figure 6.84 is one method of obtaining this full
wave control.
There are, of course, many more sophisticated circuits
which can be derived from the basic circuits discussed
here. If, for example, very close temperature control is
desired, the circuit of Figure 6.81 might not have sufficient
gain. To solve this problem a dc amplifier could be
inserted between the voltage divider and the control transistor gate to provide as close a control as desired. Other
modifications to add multiple inputs, switched gains,
ramp and pedestal control, etc., are all simple additions
to add sophistication. Basically, however, it is the UJT
itself which provides the fast rising, high current pulse,

t

Pl

6.8 k

500

RECTIFIED
LINE
(FULL OR
HALF WAVE)

Dl
lN5250A
CT

Figure 6.80. Circuit for Line Voltage Compensation
6.8 k

Figure 6.79(b). Waveforms Associated with
Battery Charger Operation
to anyone of many stimuli such as heat, light, moisture,
pressure, or magnetic field. RS is the sensing resistor and
RC is the control resistor that establishes the desired operating point. Transistor 0, is connected as an emitter
follower such that an increase in the resistance of RS
decreases the voltage on the base of 0" causing more
current to flow. Current through 01 causes voltage to
charge CT, triggering the UJT at some phase angle. As
RS becomes larger, more current flows into the capacitor,
the voltage builds up faster, causing the UJT to trigger
at a smaller phase angle and more power is applied to
the load. When RS decreases, less power is applied to
the load. Thus, this circuit is for a sensing resistor which
decreases in response to too much power in the load. If
the sensing resistor increases with load power, then RS
and RC should be interchanged.
If the quantity to be sensed can be fed back to the circuit
in the form of an isolated, varying dc voltage such as the
output of a tachometer, it may be inserted between the

RD

RD
RECTIFIED
LINE
IFULL OR
HALF WAVE)

RS*
lN5250A
Dl

!
*RS SHOULD BE SELECTED TO BE ABOUT 3 TO 5 kO
AT THE DESIRED OUTPUT LEVEL

Figure 6.81. Feedback Control Circuit
6.8 k
RECTIFIED
LINE
lN5250A

RC
100 k

Figure 6.82. Voltage Feedback Circuit

MOTOROLA THYRISTOR DEVICE DATA
1-6-43

•

2N4442
RS

T
SPRAGUE 11Z12
(OR EQUIVALENT)

6.8 k
RC
1k

ac
LINE

R1
100 k
LOAD
600W

RB2
1k

R2
30k

1N5250A

•

T

Figure 6.83. Half Wave, Average Voltage Feedback

charges to the firing voltage of Q2, 02 fires and turns the
TRIAC on through pulse transformer T1. If the temperature continues to decrease, the resistance of RT increases
more and 01 is turned on more. C1 charges faster and
the TRIAC is triggered earlier, delivering more power to
the load. As the temperature increases, the resistance of
RT decreases and Q1 will conduct less. C1 takes longer
to charge and the TRIAC is triggered later in the cycle.
When the desired temperature is reached, 01 is off and
the TRIAC is off.
The circuit shown is for a heater load, but the circuit
could also be used to control a motor with a constant
load such as a blower motor, as indicated by the dotted
portion of Figure 6.85. The circuit is shown for a heating
application but can be used for cooling by interchanging
RT and R2.

800 W LIGHT-DIMMER CIRCUITS

LOAD

1N4721
(2)

SPRAGUE 11Z12
(OR EQUIVALENT)

AC LINE

Figure 6.84. Full Wave, Average Voltage Feedback
Control
which is desirable for reliable thyristor operation. The
ease of adding feedback and relative insensitivity to line
voltage changes are additional benefits gained from using this trigger device.

TEMPERATURE-SENSITIVE HEATER CONTROL
Figure 6.85 shows a heater circuit which is controlled
by the room temperature. This circuit eliminates several
of the disadvantages of the mechanical control: large
size, high price, unreliability, and poor power regulation.
The mechanical control is an on-off control and is not
capable of regulating the power. By using phase control,
the circuit shown in Figure 6.85 is able to reduce the
power to the load as the desired temperature is reached,
thus eliminating much of the overshoot inherent in
mechanical controls.
The line voltage is full-wave rectified by the bridge
consisting of 01 through 04. The output of the bridge is
applied to the control circuit through resistor R1 and
clamped to 20 volts by zener diode 05. The thermistor
RT and variable resistor R2 control the base current for
transistor Q1. R2 is adjusted so Q1 is off at the desired
temperature. When Q1 is off, no current can flow to capacitor C1, and C1 cannot charge to the firing voltage of
unijunction transistor 02. Therefore, 02 cannot fire the
TRIAC. If the temperature decreases, the resistance of RT
increases, Q1 is turned on and current flows to C1. C1

Figure 6.86 shows a wide-range light-dimmer circuit
using a unijunction transistor and a pulse transformer to
provide phase control for the TRIAC. The circuit operates
from a 115 volt, 60 Hz source and can control up to 800
watts of power to incandescent lights. The power to the
lights is controlled by varying the conduction angle of
the TRIAC from 0° to about 170°. The power available at
170° conduction is better than 97% ofthat atthe full 180°.
Operation begins when ac voltage is applied to the
diode bridge consisting of diodes 01 through 04. The
bridge rectifies the input voltage and applies a dc voltage
to resistor R1 and zener diode 05. The zener applies a
constant voltage of 22 volts to unijunction transistor Q1
except at the end of each alternation when the line voltage drops to zero. Ouring each half cycle, capacitor C1
charges through variable resistor R2 until the capacitor
voltage equals the emitter firing voltage Vp of Q1. When
Vp is reached, Q1 fires and C1 discharges through the
emitter of 01 and a pulse is applied to the TRIAC through
pulse transformer T1. Once the TRIAC turns on, voltage
to the timing circuit is removed and no further pulses
can occur during that half cycle. Since the line voltage is
full-wave rectified and applied to the phase control circuit, the operation is the same for both positive and negative half cycles. Variable resistor R2 varies the time constant of the timing circuit thus providing phase control
of the TRIAC.

800 W SOFT-START LIGHT DIMMER
The circuit shown in Figure 6.87 is a light dimmer with
soft-start operation. Soft starting is desirable because of
the very low resistance of a cold filament compared to
its hot resistance. This low resistance causes very high
inrush currents when a lamp is first turned on, and this
leads to short lamp life. Soft starting also allows the use
of TRIACs with lower current ratings. Failures caused by
high inrush currents are eliminated by the soft-start feature, which applies current to the bulb slowly enough to
eliminate high surges. Accidental turn on, which could
nUllify this advantage, is prevented by a special dv/dt
network (R6, C3) across the TRIAC.

'~il:A~/l'J.1:.!hltWlk;t7fV$ff":""t;;L ;1..>>#>~'t'>f'\~,;,!'Jt<;. :'~:. },,·tt·~
i.,tilfuJ.~;it&~(¥f.It}'-& 'li;?4:¥~~¥\~~""~"£!~#'fjr~:~ .
~..·t~"~:· ~,~~~&~Mf.~.",~v-1..~"Po/~:~~~~~'·;~::X~~
~~~~~~ ~~:'¥,·i .... ~)'. <,,~.~~"Jf~"7"('~~\r:.,t ~"~':«'1b.

MOTOROLA THYRISTOR DEVICE DATA
1-6-44

r - - - - 1 r - - - - - - - - - - - - - - - - - - - - - - -... - - - - - l
I
I

R1

/-1..\
I

12 k

'--J1

1W

LI

R3
10 k

I

R4
1k

I

t---,

2N~6

115VAC
60 Hz

I

I

I

~

I

I

@1

r-~
>-

t

/

I

'----1
I

I
'---------6-------------------4 - - - - -

~

I

_L
'T'

I

:

:

I
4 __ -1

Figure 6.85. Temperature-Sensitive Heater Control

Operation of this circuit begins when 115 Vac input
voltage is applied to the diode bridge consisting of 01
through 04. The bridge rectifies the input and applies a
dc voltage to resistor R1 and zener diode 05. The zener
provides a constant voltage of 20 volts to unijunction
transistor 01, except at the end of each half-cycle of the
input when the line voltage drops to zero. Initially the
voltage across capacitor C1 is zero and capacitor C2 cannot charge to trigger 01. C1 will begin to charge, but
because the voltage is low, C2 will be charged to a voltage
adequate to trigger C1 only near the end of the half cycle.

Although the lamp resistance is low at this time, the voltage applied to the lamp is low and the inrush current is
small. Then the voltage on C1 rises, allowing C2 to trigger
01 earlier in the cycle. At the same time the lamp is being
heated by the slowly increasing applied voltage, and by
the time the peak voltage applied to the lamp has reached
its maximum value, the bulb has been heated sufficiently
so that the peak inrush current is kept to a reasonable
value. Resistor R4 controls the charging rate of C2 and
provides the means to dim the lamp. Diode 06 and resistor R7 improve operation at low conduction angles.

LOAD
R1
6.8 k

2W

r

---I

I

I

I

115VAC
60 Hz

I

I

I
I
I
I

I

I
I
IL __ _

D5
1N4748
22 V

I

..J

MDA920A4

Figure 6.86. 800 W TRIAC Light Dimmer

MOTOROLA THYRISTOR DEVICE DATA

1·6·45

Q2
2N6346
OR
2N5569

•

MOA920A4

r

•

LOAD

l

D6
lN4001

03

011
1
1
1
1
1
11SVAC 1
1
60 Hz
1
1

C3

Rl
S.l k

0.1 p.F
2S0V

RS

+

1k

OS
lN4747

I

I
021
I

L

04

J
Figure 6.87. 800 W Soft-Start Light Dimmer

VOLTAGE REGULATOR FOR A PROJECTION
LAMP
The circuit shown in Figure 6.88 will regulate the rms
output voltage across the load (a projection lamp) to 100
volts ± 2% for an input voltage between 105 and 250 volts
ac. This is accomplished by indirectly sensing the light
output of lamp L1 and applying this feedback signal to
the firing circuit (01 and 02) which controls the conduction angle of TRIAC 03. The load is a 150-watt projection
lamp which has a reflector mirror included inside the
glass envelope. If the light output of the lamp were
sensed directly by the photocell, it would respond to the
60 Hz variations of the supply voltage unless additional
filter components were used. Therefore, another
approach was used to generate the feedback signal. The
reflector inside the lamp's envelope glows red due to the
heat of the filament. Since the reflector has a relatively
large mass it cannot respond to the supply frequency,

M0A920A7
01-04

and its light output provides a form of integration. This
light is then used as a feedback signal. To eliminate 60
Hz modulation of the photocell, it is mounted at one end
of a black tube with the other end of the tube directed at
the back side of the reflector in the lamp. The lamp voltage is provided by TRIAC 03, whose conduction angle is
set by the firing circuit for unijunction transistor 02. The
circuit is synchronized with the line through the full-wave
bridge rectifier. The voltage to the firing circuit is limited
by zener diode 05. Phase control of the supply voltage
is set by the charging rate of capacitor C1. 02 will fire
when the voltage on C1 reaches approximately 0.65 times
the zener voltage. The charging rate of C1 is set by the
conduction of 01, which is controlled by the resistance
of photocell R2. Potentiometers R3 and R4 are used to
set the lamp voltage to 100 volts when the line voltage
is 105 volts and 250 volts, respectively. This assures that

R2

Rt
3k
SW

TUBE (SEE TEXT)

R3
10 k >...--+----~
lW
OS
1NS250A
lOS TO 250 V
AC
POWER SOURCE

•
L1- lS0 WATT PROJECTION LAMP WITH
BUILT·IN REFLECTOR MIRROR

Figure 6.88. Voltage Regulator for a Projection Lamp

MOTOROLA THYRISTOR DEVICE DATA

1-6-46

SPRAGUE
llZ12

the lamp voltage will be within the desired tolerance over
the operating range of input voltage. Some interaction
will occur between R3 and R4 and the adjustment of each
potentiometer may have to be made several times. Since
this is an rms voltage regulator, a true rms meter must
be used to adjust the load voltage.

TIMER CIRCUITS
A variation of the UJT-relay time delay circuit is shown
in Figure 6.89. Here the relay is replaced by an SCR which
generally reduces circuit cost. After one cycle of operation, SCR #1 will be on, and a low value of voltage is
applied to the UJT emitter circuit, thus interrupting the
timing function. When push button 51 is pushed, or a
positive going pulse is applied at point A, SCR #2 will

+24V

~l

10 k

R2
1k

390

RL*

~Sl
N.O.

1 p.F
Cc
#2
MCR72-2

510
A

*VALUE OF RL MUST BE LOW ENOUGH TO ALLOW HOLD CURRENT
TO FLOW IN THE SCR.

Figure 6.89. A Simple Time Delay Circuit
Using Two SCRs

turn on, and SCR #1 will be turned off by com mutating
capacitor Cc . With SCR #1 off, the supply voltage will be
applied to RE and the circuit will begin timing again. After
a period of time determined by the setting of RE, the UJT
will fire and turn SCR #1 on and commutate SCR #2 off.
The time delay is determined by the charge time of the
capacitor. In order to achieve long time delays, RE, CE,
or both will have to be large. For good accuracy and
repeatability, the capacitor must have a leakage current
that is much smaller than the charge current. A Mylar
type capacitor has been found to be good for this purpose, but since this type of capacitor is fairly expensive
for large values of capacitance, it is preferable to increase
RE in order to obtain long time delays. Large values of
RE, however, creates a problem due to the UJT peak point
emitter current Ip. When the capacitor is charged almost
to the peak point, only a small voltage will appear across
RE, and if RE is very large, only a small current will be
flowing. If the peak current of the UJT is appreciable, the
device will never fire if the current through RE is not
sufficient to supply Ip. The annular device, having a typica"p of 0.2 pA @ VB2B1 = 25 Vdc, offers an advantage
in this area and large values of RE can be used. However,
when charging through a resistor, the charge current will
initially be relatively large while the charge current when
the voltage on the capacitor is close to Vp will be small.
It would, for this reason, be advantageous to charge with
a constant small current. This can be accomplished by
simply replacing RE by a junction field effect transistor
as shown in Figure 6.90. Since the JFET is fully on when
there is no voltage from gate to source, the 10 MO resistor
will determine the amount of off bias applied to the FET.
A constant current of less than 1 p.A can easily be
obtained which results in time delays up to 10 minutes.
When the capacitor is charged with a linear current,
the charge time can be found from the equation:
tcharge =

(V p - VV),CE
I h
c arge

When CE is in microfarads and 'charge is in microamperes, t will be in seconds.
However, even an emitter peak current as low as 0.2
p.A is objectionable if longer time delays are desired. In
the circuit shown in Figure 6.91 the peak current is supplied separately from the charging current and extremely
long time delays are possible. Transistor 01 and resistors
R1, R2, and R3 form a constant current source and the
charge current might be adjusted to be as low as a few
nanoamperes. This current would, of course, not be sufficient to fire the UJT where Ip = 0.2 pA unless the peak
current was supplied from another source. Field effect
transistor 02, acting as a source follower, supplies the
current flowing into the emitter lead prior to firing and
diode D1 provides a low impedance discharge path for
CEo D1 must be selected to have a leakage much lower
than the charge current.
The charge current to CE is given by the formula:

+20V

2N4853
_ ......._ _.... OUTPUT
PULSE
R1
27
' " -_ _--.-_ _--.J

Figure 6.90. A Time Delay Circuit Featuring Constant
Current Charging

'charge =

MOTOROLA THYRISTOR DEVICE DATA

1-6-47

E - VBE
R3
- 'B

•

+25V

1

1k

E

Rl
1k

•

which the PUT can be used. The circuits are not optimized
even though performance data is shown.
In several of the circuit examples, the versatility of the
PUT has been hidden in the design. 8y this it is meant
that in designing the circuit, the circuit designer was able
to select a particular intrinsic standoff ratio or he could
select a particular RG (gate resistance) that would provide
a maximum or minimum valley and peak current. This
makes the PUT very versatile and very easy to design
with.

--!
18

2N4853
03

R2
1k

LOW VOLTAGE LAMP FLASHER
One advantage of the PUT over a conventional unijucntion transistor is that the PUT operates very well for
low supply voltages. This is due to the low forward voltage drop ofthe PUT, 1.5 volts maximum for the MPU13133, compared to the emitter saturation voltage of the UJT
of 3 volts maximum for the 2N5431.
A circuit using the PUT in a low voltage application is
shown in Figure 6.92 where a supply voltage of 3 volts
is used. The circuit is a low voltage lamp flasher composed of a relaxation oscillator formed by 01 and an SCR
flip flop formed by 02 and 03.
With the supply voltage applied to the circuit, the timing capacitor C1 charges to the firing point of the PUT, 2
volts plus a diode drop. The output of the PUT is coupled
through two 0.01 JLF capacitors to the gate of 02 and 03.
To clarify operation, assume that 03 is on and capacitor
C4 is charged plus to minus as shown in the figure. The
next pulse from the PUT oscillator turns 02 on. This
places the voltage on C4 across 03 which momentarily
reverse biases 03. This reverse voltage turns 03 off. After
discharging, C4 then charges with its polarity reversed
to that shown. The next pulse from 01 turns 03 on and
02 off. Note that C4 is a non-polarized capacitor.
For the component values shown, the lamp is on for
about 1/2 second and off the same amount of time.

Figure 6.91. Long Duration Time Delay

Since 18 is small, the delay time will vary linearly with
R3. The voltage E, applied across R3 and the base emitter
junction of 01, is set by the variable resistor Rl. Time
delays up to 10 hours are possible with this circuit. Resistor R4 in series with the FET drain terminal must be
large enough not to allow currents in excess of IV to flow
when the UJT is on, otherwise the UJT will not turn off
and the circuit will latch up.

PUT APPLICATIONS
PUTs are negative resistance devices and are often
used in relaxation oscillator applications and as triggers
for controlling thyristors. Due to their low leakage current, they are useful for high-impedance circuits such as
long-duration timers and comparators.

VOLTAGE CONTROLLED RAMP GENERATOR
The PUT provides a simple approach to a voltage controlled ramp generator, VCRG, as shown in Figure 6.93(a).

TYPICAL CIRCUITS
The following circuits show a few of the many ways in

Rl
100 k

R6
51 k

R3
1k

01

...----,2N6027
Q2

2N5060

C2
C1

10 JLf

O.Olp.F
R5
1k

R2
910

=
Figure 6.92. Low Voltage Lamp Flasher
~ ~

:

~."" ;. ~.

;

MOTOROLA THYRISTOR DEVICE DATA
1-6-48

The current source formed by 01 in conjuction with capacitor C1 set the duration time of the ramp. As the positive dc voltage at the gate is changed, the peak point
firing voltage of the PUT is changed which changes the
duration time, i.e., increasing the supply voltage increases the peak point firing voltage causing the duration
time to increase.
Figure 6.93(b) shows a plot of voltage-versus-ramp
duration time for a 0.0047 ",F and a 0.01 JLF timing capacitor. The figure indicates that it is possible to have a
change in frequency of 3 ms and 5.4 ms for the 0.0047
JLF and the 0.01 JLF capacitor respectively as the control
voltage is varied from 5 to 20 volts.

Rl
10 k

~

+
40V

RAMP OUT

R2
20 k

2N6027

R5
100 k

+
5to20V

R4
100

Figure 6.93(a). Voltage Controlled Ramp Generator
(VCRG)

20

/

18

/

17

15
14

0=

12

/

:>

/

/

/

/

C = O.Ol",F

/

I

13

~

/

C = 0.0047 ",F /

16

 OUT
R4
100

R6

5.1 k

Figure 6.94. Low Frequency Divider

MOTOROLA THYRISTOR DEVICE DATA
1-6-49

C,
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01

",F
",F
",F
",F
",F
",F
",F
",F
",F
",F

Cz

Division

0.01 ",F
0.02 ",F
0.03",F
0.04",F
0.05",F
0.06",F
0.07 ",F
0.08",F
0.09",F
0.1 ",F

2
3
4

5
6
7
8
9
10
11

•

+20Vdc

The time needed to charge C1 to the peak point firing
voltage of Q2 can be approximated by the following
equation:

Ql

2N5457 I----~---....,

R3
2M

t = C!l.V
I '
where

Q2
2N6028

•

-0

R2
100

OUTPUT
R4
2M

Figure 6.95. 20-Minute, Long Duration Timer

The circuit works very well and is fairly insensitive to
the amplitude, pulse width, rise and fall times of the incoming pulses.
PUT LONG DURATION TIMER
A long duration timer circuit that can provide a time
delay of up to 20 minutes is shown in Figure 6.95. The
circuit is a standard relaxation oscillator with a FET current source in which resistor R1 is used to provide reverse
bias on the gate-to-source of the JFET. This turns the
JFET off and Increases the charging time of C1. C1 should
be a low leakage capacitor such as a mylar type.
The source resistor of the current source can be computed using the following equation:
VGS = Vp (1 - VIO/IOSS)
. R1 = VGS
..
10
where

10 is the current out of the current source.
Vp is the pinch off voltage,
VGS is the voltage gate-to-source and,
lOSS is the current, drain-to-source, with the
gate shorted to the source.
Bridge MOA990-3

t is time in seconds
C is capacitance in JLF,
!l.V is the change in voltage across capacitor C1,
and
I is the constant current used to charge C1 .
Maximum time delay of the circuit is limited by the
peak point firing current, Ip, needed to fire Q2. For charging currents below Ip, there is not enough current available from the current source to fire Q2, causing the circuit
to lock up. Thus a PUT works better than a unijunction
in a long duration timer because it has a lower peak point
firing current. Also, because ofthe programmable aspect
of the PUT, Ip can be made very small by making RG (the
equivalent parallel resistance of R3 and R4) large, (1 MO)
as shown in Figure 6.95.
PHASE CONTROL
Figure 6.96 shows a circuit using a PUT for phase control of an SCR. The relaxation oscillator formed by Q2
provides conduction control of Q1 from 1 to 7.8 milliseconds or 21.6° to 168.5°. This constitutes control of over
97% of the power available to the load.
Only one SCR is needed to provide phase control of
both the positive and negative portion of the sine wave
by putting the SCR across the bridge composed of diodes
01 through 04.
BATTERY CHARGER USING A PUT
A short circuit proof battery charger is shown in Figure
6.97 which will provide an average charging current of
about 8 amperes to a 12 volt lead acid storage battery.
The charger circuit has an additional advantage in that it
will not function nor will it be damaged by improperly
connecting the battery to the circuit.
With 115 volts at the input, the circuit commences to
function when the battery is properly attached. The battery provides the current to charge the timing capacitor
C1 used in the PUT relaxation oscillator. When C1 charges
Rl
15 k

R3

2WATI
D5
lN4114
20V

Figure 6.96. SCR Phase Control

MOTOROLA THYRISTOR DEVICE DATA
1-6-50

1k

R4
1k

2N5164

•
A
Rl
10 k

R4
1k
2N6027

R2

-=- 12V

PUT

01
lN5240
10V

Cl
O.I/LF

T2
l1Z12
1:1

R3
47k

•

+

50k

B

SPRAGUE

Figure 6.97(8). 12-Volt Battery Charger
to the peak point voltage ofthe PUT, the PUT fires turning
the SCR on, which in turn applies charging current to the
battery. As the battery charges, the battery voltage in·
creases slightly which increases the peak point voltage
of the PUT. This means that C1 has to charge to a slightly
higher voltage to fire the PUT. The voltage on C1 increases until the zener voltage of 01 is reached which
clamps the voltage on C1 and thus prevents the PUT
oscillator from oscillating and charging ceases. The maximum battery voltage is set by potentiometer R2 which
sets the peak point firing voltage of the PUT.
In the circuit shown, the charging voltage can be set
from 10 V to 14 V, the lower limit being set by 01 and
the upper limit by n. Lower charging voltages can be
obtained by reducing the reference voltage (reducing the
value of zener diode 01) and limiting the charging current
(using either a lower voltage transformer, T1, or adding
resistance in series with the SCR).
Resistor R4 is used to prevent the PUT from being destroyed if R2 were turned all the way up.
Figure 6.97(b) shows a plot of the charging characteristics of the battery charger.

1250

~
~

cr:

'"u::
(.)

1200

~PECIFI~ GRAJITY OF IELECT~OLvri versuj TIME

'""'- r\.
\

1\ /
)V

U

~

'"

90 V rms VOLTAGE REGULATOR USING A PUT

The circuit of Figure 6.98 is an open loop rms voltage
regulator that will provide 500 watts of power at 90 V
rms with good regulation for an input voltage range of
110-130 V rms.
With the input voltage applied, capacitor C1 charges
until the firing point of 03 is reached causing it to fire.
This turns 05 on which allows current to flow through
the load. As the input voltage increases, the voltage
across R10 increases which increases the firing point of
03. This delays the firing of 03 because C1 now has to
charge to a higher voltage before the peak-point voltage
is reached. Thus the output voltage is held fairly constant
by delaying the firing of 05 as the input voltage increases.
For a decrease in the input voltage, the reverse occurs.
Another means of providing compensation for in-

1150

_V"

\

~AR.TNG C~RREN1 versuj

4
TIME

I
4
5
TIME (HRI

2

9

Figure 6.97(b). Charging Characteristics of
Battery Charger

creased input voltage is achieved by 02 and the resistive
divider formed by R6 and R7. As input voltage increases,
the voltage at the base of 02 increases causing 02 to
turn on harder which decreases the charging rate of C1
and further delays the firing of 05.
To prevent the circuit from latching up atthe beginning
of each charging cycle, a delay network consisting of 01
and its associated circuitry is used to prevent the current
source from turning on until the trigger voltage has
reached a sufficiently high level. This is achieved in the
following way: Prior to the conduction of 02, the voltage
on the base of 01 is set by the voltage divider (R4 + R5)/
(R1 + R3 + R4 + R5). This causes the base of 01 to be
more positive than the emitter and thus prevents 01 from
conducting until the voltage across R3 is sufficient to
forward bias the base-emitter junction of 01. This occurs
when the line voltage has increased to about 15 volts.
The circuit can be operated over a different voltage
range by changing resistors R6 and/or R4 which change
the charging rate of C1.

MOTOROLA THYRISTOR DEVICE DATA
1-6-51

/'

LOAD
SOOW
90V ± 2

Rl
10 k

R6
300 k

R2
1k

R3

110-130 V
rms

1k

R4
10k

•

02
lN4747
20V

RS
6.8 k

Cl
O.I/LF
100V

R7
4.7k

R8
10 k

RIO
6.8 k

Figure 6.98(al. rms Voltage Regulator
100

~

r-...

-- ;-<:1'-,.

90

~

w

'"~

80

....
:::>

70

~

1=
:::>
a

60

.......

"

f- - - CONDUCTION TIME

00
80

-1--IOUTiUTVOILTAGEI

90

100

110 120 130 140
INPUT VOLTAGE (V rms)

~

..

-

r- I"'-..

~

,,

'"

100

Vs of the SBS is reduced to about 4 volts, and since this
is below the operating voltage of the internal zener
diodes, the temperature sensitivity of the device is
increased.
An improved full range power controller suitable for
lamp dilT\ming and similar applications is shown in
Figure 6.100.
It operates from a 120 volt, 60 Hz ac source and can
control up to 1000 watts of power to incandescent bulbs.
The power to the bulbs is varied by controlling the conduction angle of TRIAC Q1. Many circuits can be used for
phase control, but the single RC circuit used is the simplest by far and was consequently chosen for this particular application. For settings such that no power is
delivered to the load, the timing capacitor would never
discharge through the SBS. The result is an abnormal
amount of apparent phase shift caused by the capacitor
starting to charge toward a source of voltage with a residual charge of the opposite sign. This is the cause of
the hysteresis effect and is eliminated in this circuit by
the addition of the two diodes and 5.1 kO resistor connected to the SBS gate. At the end of each positive half

160

'"z..:

,

4

z

~

'-'
:::>

'"az
'-'

2
170

(bl. Output Voltage and Conduction Angle
versus Input Voltage
Figure 6.98(b) provides a plot of output voltage and
conduction angle versus input voltage for the regulator.
As the figure indicates, good regulation can be obtained
between the input voltage range of 110 to 130 volts.

SILICON BILATERAL SWITCH (SBS)
APPLICATIONS
It is important that thyristor trigger circuitry be capable
of supplying a fast rising, high current gate pulse to the
power thyristors in order to prevent di/dt failure, especially when they are subjected to high inrush load currents. Because of the regenerative switching action and
low dynamic on resistance of the SBS, it is ideally suited
for this use.
These circuits indicate the uses for the SBS. In some
applications the device switches on at Vs while in others
it is turned on by drawing a small current out of the gate
lead.
LAMP DIMMER
Figure 6.99 is the schematic diagram of a low cost full
range lamp ,dimmer. Shunting the SBS with two 20 kO
resistors minimizes the "flash-on" or hysteresis effect.

Figure 6.99. Low Cost Lamp Dimmer

MOTOROLA THYRISTOR DEVICE DATA
1-6-52

5.1k

descent lamp with a voltage rating equal to the supply
voltage. It may be used to check the set point and operation of the unit by opening the test switch and adjusting
the input or set point to fire the SBS. An alarm unit such
as the Mallory Sonalert may be connected across the fuse
to provide an audible indication of crowbar action. Note
that this circuit may not act on short, infrequent power
line transients.

10 k

Ql

SBS APPLICATIONS IN POWER CONTROL
lN4003

O.l/LF

Figure 6.100.1000 W TRIAC Light Dimmer
cycle when the applied voltage drops below that of the
capacitor, gate current flows out of the SBS and it
switches on, discharging the capacitor to near zero volts.
The RC network shown across the TRIAC represents a
typical snubber circuit that is normally adequate to prevent line transients from accidentally firing the TRIAC.
ELECTRONIC CROWBAR
Occasionally the need arises for positive protection of
expensive electrical or electronic equipment against
excessive supply voltage. Such overvoltage conditions
can occur due to improper switching, wiring, short circuits or failure of regulators. Where it is economically
desirable to shut down equipment rather than allow it to
operate on excessive supply voltage, an electronic "crowbar" circuit such as the one shown in Figure 6.101 can
be employed to quickly place a short-circuit across the
power lines, thereby dropping the voltage across the protected device to near zero and blowing a fuse. Since the
TRIAC and SBS are both bilateral devices, the circuit is
equally useful on ac or dc supply lines. With the values
shown for Rl, R2 and R3, the crowbar operating point
can be adjusted over the range of 60 to 120 volts dc or
42 to 84 volts ac. The resistor values can be changed to
cover a different range of supply voltages. The voltage
rating of the TRIAC must be greater than the highest
operating point as set by R2. 11 is a low power incan-

The incandescent-lamp dimmer was one of the first
circuits to use thyristors after their invention and has
remained one ofthe most important applications of these
devices. Triggering circuits for the lamp dimmer have
taken many forms, from the relatively complex unijunction transistor oscillator with an RC slaving network to
simpler circuits, which use a SBS trigger.
Figure 6.102 shows the basic control circuit. In the positive half-cycle, the 0.1 j.tF capacitor charges through the
dual-section phase-shift circuit until its voltage reaches
the break-over potential of the MBS4991 SBS. The
MBS4991 potential then drops to about 1 volt, forcing
charge from the 0.1 j.tF capacitor through the gate of the
MAC210-4 TRIAC. This current turns the TRIAC on. When
the TRIAC turns on, it removes the voltage from the timing circuit. Cl then discharges through the latched on
TRIAC and the SBS if it also holds. What happens
depends on the setting of Rl, and the switching current,
switching voltage, latching current and holding current
of the SBS. Analysis of the circuit behavior is difficult and
cannot be treated on a half-cycle basis because the previous half-cycle must be considered to establish the initial
conditions, and because large residual voltages remain
on Cl. Several cycles of the ac line are needed to establish
steady state conduction angles.
Hysteresis in the single RC phase controller is a result
of the initial voltage on the capacitor before triggering.
If the control is set to completely turn-off the lamp, triggering does not occur, and the capacitor voltage alternates up and down to some value less than VS. If the
control is advanced, the SBS fires and latches, causing
the capacitor to charge from the previous polarity on-

Rl
10 k
SUPPLY VOLTAGE
AC OR DC

R2~~S_ET_P_0_IN_T_AD_J_'~____~~~____- J

1k
MBS4991
R3
lk

Figure 6.101. Electronic Crowbar

MOTOROLA THYRISTOR DEVICE DATA
1-6-53

TO ELECTRICAL OR
ELECTRONIC EQUIPMENT

1

MT2
100

RI

100 k

.'

0.1 p,F

15

LINE

LOAD

C2
R2

27 k
0.22 p,F
CI

Figure 6.102. Basic Control Circuit for TRIAC
Using a SBS Trigger

symmetrical. Therefore, the conduction angles of the
MAC21 0-4 are not identical in the two half-cycles. As a
result, a small dc component is introduced in the load.
In cases where high power must be handled or rapidly
rising voltages may be encountered (high dv/dt), it is
preferable to use two SCRs instead of a TRIAC for fullwave power control. Figure 6.103 illustrates a variation
of the basic circuit to allow this. In the positive half-cycle,
SCR-l is triggered, through the primary of the pulse
transformer (T), in exactly the same manner as in the
basic circuit. In the negative half-cycle, the 0.1 p,F triggering capacitor discharges through the shunt G-K diode
of SCR-l and the primary of the pulse transformer, inducing a pulse in the secondary, which triggers SCR-2.
The circuits described above were designed for incandescent-lamp dimmers and are ideally suited for this purpose. However, they may have many other uses, which
are perhaps not immediately obvious. For example, uni-

state voltage of about 1 V. Consequently, the control settings for dim illumination depend on whether the potentiometer is being advanced from an off state or retarded
from a state with the lamp on, because the timing capacitor must charge through a different voltage gradient in
.
the two cases.
The dual-section phase-shift network prevents hysteresis and allows reliable and stable triggering at all conduction angles. The 100 kO variable resistor Rl and the
0.22 p,F capacitor Cl perform the basic phase shifting and
serve as a charging supply for the 0.1 p,F charge-storage
capacitor C2. The 27 kO resistor isolates the trigger circuit
from the phase shifter so that the voltage on Cl is only
minimally affected by the triggering action. It is this isolation that reduces the hysteresis, prevalent in singlesection .phase~shift systems, to an unnoticeable level.
Although the same timing circuit is used for both
halves of the cycle, the MBS4991 trigger is not exactly

SCR.I

MCR265·6
IN4001

SCR·2

S

IN4001

lOOk

MBS4991

LOAD

LINE
15

0.1 p,F

*200 p.H

...----11-----. MINIMUM
PRIMARY
INDUCTANCE,
0.22 p,F
1:1 TURN RATIO
L..-_......._ _ _-I f-------I (SPRAGUE IIZI21
27 k

o~-----------------~o
Figure 6.103. Basic Full-Wave Control Circuit for SCRs

MOTOROLA THYRISTOR DEVICE DATA
1-6-54

+-LOAO--

LINE

•
*200 /LH MINIMUM PRIMARY
INDUCTANCE. 1:1 TURN RATIO
(SPRAGUE 11 Z121

27k

Figure 6.104. Variation of Basic Control Circuit to Provide Controlled DC Output
versal and shaded-pole motors are easily and conveniently controlled with these circuits. These motors have
higher torque at low speeds when open-loop controlled
in this manner rather than with rheostats or variable
transformers. owing to the higher voltage pulses applied.
In another application, a slight modification of the basic
control circuit allows control of the dc output of a fullwave rectifier bridge using pulse-transformer coupling
(Figure 6.104).
The power rating of these circuits is limited only by the
thyristors employed. The control circuit will give sufficient drive for any thyristor that can be triggered with 50

mA or less gate current. For example, with MCR3818-4
controlled rectifiers mounted on a suitable heat sink,
these circuits will control up to 3 kW power from a 120
V line.

TRIAC ZERO-POINT SWITCH APPLICATIONS
BASIC TRIAC ZERO-POINT SWITCH
Figure 6.105 shows a manually controlled zero-point
switch useful in power control for resistive loads. Operation of the circuit is as follows. On the initial part of the
positive half cycle, the voltage is changing rapidly from

R3
1.2 k
7W

D1
1N4003

R4
1500
1W
R1
12 k
2W

115VAC
60 Hz

06
1N4372

Q2
2N6346
04
1N4001

D3
1N4003

02
1N4003
Q1
MCR1906-4

R2
10 k
C1
10/LF
5V

C2
2pf
200 V

05
1N4003

+C3
1pf

200 V
S1

Figure 6.105. Zero-Point Switch

MOTOROLA THYRISTOR DEVICE DATA
1-6-55

LOAD

zero causing a large current flow into capacitor C2. The
current through C2 flows through R4, 03, and 04 into the
gate of the TRIAC Q2 causing it to turn on very close to
zero voltage. Once Q2 turns on, capacitor C3 charges to
the peak of the line voltage through 05. When the line
voltage passes through the peak, 05 becomes reversebiased and C3 begins to discharge through 04 and the
gate of Q2. At this time the voltage on C3 lags the line
voltage. When the line voltage goes through zero there
is still some charge on C3 so that when the line voltage
starts negative C3 is still discharging into the gate of Q2.
Thus Q2 is also turned on near zero on the negative half
cycle. This operation continues for each cycle until switch
Sl isciosed,atwhichtimeSCRQl isturnedon.Ql shunts
the gate current away from Q2 during each positive half
cycle keeping Q2 from turning on. Q2 cannot turn on
during the negative cycle because C3 cannot charge
unless Q2 is on during the positive half cycle.
If Sl is initially closed during a positive half cycle, SCR
Ql turns on but circuit operation continues for the rest
of the complete cycle and then turns off. If Sl is closed
during a negative half cycle, Ql does not turn on because
it is reverse biased. Ql then turns on at the beginning of
the positive half cycle and Q2 turns off.
Zero-point switching when Sl is opened is ensured by
the characteristic of SCR Ql. If Sl is opened during the

•

positive half cycle, Ql continues to conduct for the entire
half cycle and TRIAC Q2 cannot turn on in the middle of
the positive half cycle. Q2 does not turn on during the
negative half cycle because C3 was unable to charge during the positive half cycle. Q2 starts to conduct at the first
complete positive half cycle. If Sl is opened during the
negative half cycle, Q2 again cannot turn on until the
beginning of the positive half cycle because C3 is
uncharged.
A 3-volt gate signal for SCR Ql is obtained from 01,
Rl, Cl, and 06.
TEMP~RATURE

CONTROL WITH ZERO-POINT
SWITCHING
Figure 6.106 shows a modulated TRIAC zero-point
switching circuit designed to control heater loads operating from 115 Vac.
Circuit operation is best described by splitting the circuit into two parts. The circuit at the right is the zeropoint switch (previously described in the section on zeropoint switching) and its operation is unchanged. The circuit to the left is the proportional control for the zeropoint switch.
The operation of the control circuit is as follows: diode
01, resistor Rl, capacitor Cl and the load on Cl establish
the dc supply voltage for the control circuit. Temperature
ZERO·POINT SWITCH

CONTROL CIRCUIT

R1
5k
5W

D1
lN4003

+

R8
1.2 k
7W

R2
470

R4*
20 k

C3
2/LF
200 V

R6
3k
04
2N6346

R9
150
1W
115VAC
60Hz

D4

+ C1

R3
330 k

40/LF
SOV

D5
1N4001

1N4003

R5*
82 k

01
2N4870

D6
1N4003

D3
1N4003

+ C4

03
2N6239

C2
0.47 /LF
30 V

1/LF
200 V

R10
1k

2W
"LOW TEMP. COEFFICIENT
**FENWELL OR51J1100 k THERMISTOR

Figure S.10S. Temperature Controller Using Zero-Point Switching
...

,......

','

MOTOROLA THYRISTOR DEVICE DATA
1-6-56

HEATER
LOAD

is sensed by thermistor RT, which is part of the bridge
circuit consisting of R4, R5, R6, R7, D2 and RT. The detector for the bridge is transistor 02. R7 is set so the bridge
is in balance at the desired temperature. As the temperature increases, RT decreases, 02 turns on and provides
gate drive to SCR 03. 03 turns on and shunts the gate
signal away from the TRIAC 04.04 shuts off and removes
power to the load. Now, as the temperature drops, RT
increases and 02 turns off, SCR 03 turns off, and fullwave power is applied to the load. Normally, the circuit
would continue to cycle randomly, providing groups of
full power to the heater load. However, modulation is
applied to proportion the load power in response to small
changes in RT. The modulation is achieved by superimposing a sawtooth voltage on one arm of the bridge
through R3. The period of the sawtooth is set to equal
12 cycles of the line frequency. From one to all 12 cycles
can be applied to the load, thus allowing the load power
to modulate in 8% steps from 0% to 100% duty cycle. The
sawtooth voltage is generated by the unijunction transistor relaxation oscillator consisting of R2, R3, R4, C2
and 01. The sawtooth wave modulates the bridge voltage
so that over a portion ofthe twelve-cycle group the bridge
voltage will be above the null point, and over the other
portion it will be below the null point. This action divides
each twelve-cycle group into an on portion and an off
portion, the proportioning depending upon the amount
RT has varied from the nominal value. This circuit provides excellent control of a resistance heater as it will
tend to stabilize and apply the correct amount of power
on a continuous basis at a steady-state duty cycle
depending on the load requirements. The temperature is
therefore controlled over a very narrow range and no
EMI is generated.
TRIAC RELAY-CONTACT PROTECTION
A common problem in contact switching high current
is arcing which causes erosion of the contacts. A solution
to this problem is illustrated in Figure 6.107. This circuit
can be used to prevent relay contact arcing for loads up
to 50 amperes.
There is some delay between the time a relay coil is
energized and the time the contacts close. There is also
a delay between the time the coil is de-energized and the
time the contacts open. For the relay used in this circuit
both times are about 15 ms. The TRIAC across the relay
contacts will turn on as soon as sufficient gate current is
present to fire it. This occurs after switch Sl is closed but
before the relay contacts close. When the contacts close,
the load current passes through them, rather than
through the TRIAC, even though the TRIAC is receiving
gate current. If S1 should be closed during the negative
half cycle of the ac line, the TRIAC will not turn on immediately but will wait until the voltage begins to go positive, at which time diode Dl conducts providing gate

R3
47

C2

O.l/LF
Q12N5569

Sl

115VAC
60 Hz

115 V RELAY WITH PICK·
UP AND DROP·OUT TIMES
OF 10-20 ms

DllN4004

Rl
1.5 k
lOW
R2
10
lOW

Cl

+

20/LF

250 V

Figure 6.107. TRIAC Prevents Relay Contact Arcing

current through Rl. The maximum time that could elapse
before the TRIAC turns on is 8-1/3 ms for the 60 Hz supply.
This is adequate to ensure that the TRIAC will be on
before the relay contact closes. During the positive half
cycle, capacitor Cl is charged through Dl and R2. This
stores energy in the capacitor so that it can be used to
keep the TRIAC on after switch Sl has been opened. The
time constant of Rl plus R2 and C1 is set so that sufficient
gate current is present at the time of relay drop-out after
the opening of Sl, to assure that the TRIAC will still be
on. For the relay used, this time is 15 ms. The TRIAC
therefore limits the maximum voltage, across the relay
contacts upon dropout to the TRIAC's voltage drop of
about 1 volt. The TRIAC will conduct until its gate current
falls below the threshold level, after which it will turn off
when the anode current goes to zero. The TRIAC will
conduct for several cycles after the relay contacts open.
This circuit not only reduces contact bounce and arcing
but also reduces the physical size of the relay. Since the
relay is not required to interrupt the load current, its rating can be based on two factors: the first is the rms rating
of the current-carrying metal, and the second is the contact area. This means that many well-designed 5 ampere
relays can be used in a 50 ampere load circuit. Because
the size of the relay has been reduced, so will the noise
on closing. Another advantage of this circuit is that the
life of the relay will be increased since it will not be subjected to contact burning, welding, etc.
The RC circuit shown across the contact and TRIAC (R3
and C2) is to reduce dvldt if any other switching element
is used in the line.

MOTOROLA THYRISTOR DEVICE DATA
1-6-57

•

•

11lll11"""'~"""'.""""l!li.~~
MOTOROLA THYRISTOR DEVICE DATA
1-6-58

CHAPTER 7
MOUNTING TECHNIQUES FOR THYRISTORS

Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for
lead-mounted parts used at low currents, a heat exchanger is required to prevent the junction temperature from
exceeding its rated limit, thereby running the risk of a
high failure rate. Furthermore, semiconductor-industry
field history indicates that the failure rate of most silicon
semiconductors decreases approximately by one-half for
a decrease in junction temperature from 160°C to 135°C.*
Many failures of power semiconductors can be traced
to faulty mounting procedures. With metal packaged devices, faulty mounting generally causes unnecessarily
high junction temperature resulting in reduced component life. In addition, mechanical damage can occur from
mounting securely to a warped surface. With the widespread use of plastic-packaged semiconductors, mechanical damage becomes very significant.
Figure 7.1 shows an example of doing nearly everything wrong. In this instance, the victimized device is in
a TO-220 package. The leads are bent to fit into a socket
- an operation which, if not properly done, can crack the
package, break the bonding wires, or crack the die. The
package is fastened with a sheet-metal screw through a
1I4"-hole containing a fiber-insulating sleeve. The force
used to tighten the screw pulls the package into the hole,
causing enough distortion to crack the die. Even if the

PLASTIC BODY

die were not cracked, the contact area is small because
of the area consumed by the large hole and the bowing
of the package; the result is a much higher junction temperature than expected. If the heat sink surface is rough
and some burrs are present around the hole, many but unfortunately not all - poor mounting practices are
covered.
In many situations, the semiconductor case must be
isolated electrically from its mounting surface. The isolation material is, to some extent, a thermal isolator as
well, which raises junction operating temperatures. In
addition, there is the possibility of arc-over problems if
high voltages are being handled. Thus, electrical isolation
places additional demands upon the mounting
procedure.
Proper mounting procedures necessitate attention to
the following areas:
1)
2)
3)
4)
5)

Mounting surface preparation,
Application of thermal compounds,
Installation of the insulator,
Fastening of the assembly, and
Lead bending and soldering.

In this chapter, the procedures are discussed in general
terms. Specific details for each class of packages are
given in the figures and in Table 7.1. Appendix VII contains
a brief review of thermal resistance concepts, and Appendix VIII lists sources of supply for accessories. Motorola-supplied hardware for all power packages is detailed on separate data sheets for each package type.

MOUNTING SURFACE PREPARATION

SHEET METAL SCREW

Figure 7.1. Extreme Case of Improperly Mounting
A Semiconductor (Distortion Exaggerated)
*See MIL Handbook 217B, Section 2.2.
".

~>.

;',:"

,-.

,',..

~

;.

.

'

In general, the heat sink mounting surface should have
a flatness and finish comparable to that of the semiconductor package. In lower power applications, the heat
sink surface is satisfactory if it appears flat against a
straight edge and is free from deep scratches. In highpower applications, a more detailed examination of the
surface is required.
SURFACE FLATNESS
Surface flatness is determined by comparing the variance in height (<1h) of the test specimen to that of a
reference standard as indicated in Figure 7.2. Flatness is
normally specified as a fraction of the Total Indicator

..
, "

MOTOROLA THYRISTOR DEVICE DATA
1-7-1

•

TlR = TOTAL INDICATOR READING
SAMPLE
PIECE

Ilh
j

•

REFERENCE PIECE

DEVICE MOUNTING AREA

Figure 7.2. Surface Flatness
Reading (TIR). The mounting surface flatness, i.e., AhITlR,
is satisfactory in most cases if less than 4 mils per inch,
which is normal for extruded aluminum - although disc
type devices usually require 1 mil per inch.

SURFACE FINISH
Surface finish is the average of the deviations both
above and below the mean value of surface height. For
minimum interface resistance, a finish in the range of 50
to 60 microinches is satisfactory, * a finer finish is costly
to achieve and does not significantly lower contact resistance. Most commercially available cast or extruded
heat sinks will require spotfacing when used in highpower applications. In general, milled or machined surfaces are satisfactory if prepared with tools in good working condition.
Mounting holes generally should only be large enough
to allow clearance of the fastener. The larger packages
having mounting holes removed from the semiconductor
die location, such as a TO-204AA (TO-3), may successfully
be used with larger holes to accommodate an insulating
bushing, but this doesn't work well with Thermopad plastic packages. For these packages, a smaller screw size
must be used so that the hole for the bushing does not
exceed the hole in the package.
Punched mounting holes have been a source of trouble
because, if not properly done, the area around a punched
hole is depressed in the process. This "crater" in the heat
sink around the mounting hole can cause two problems.
The device can be damaged by distortion of the package
as it attempts to conform it to the shape of the heat sink
indentation, or the device may only bridge the crater and
leave a significant percentage of its heat-dissipating surface out of contact with the heat sink. The first effect may
often be detected immediately by looking for cracks in
the package (if plastic), but usually an unnatural stress is
imposed, which results in an early-life failure. The second
effect results in hotter operation and the problem is not
manifested until much later.
.
Although punched holes are seldom acceptable in the
relatively thick material used for extruded aluminum heat
*Tests run by Thermalloy (Catalog #74-INS-3, page 14)
using a copper TO-3 package with a typical 32-microinch
finish, showed that finishes between 16 and 64 Win
caused less than ± 2.5% difference in interface thermal
resistance.

sinks, several manufacturers are capable of properly utilizing the capabilities inherent of fine-edge blanking or
sheared-through holes when applied to stamped heat
sinks. The holes are pierced using Class A progressive
dies mounted on four-post die sets equipped with proper
pressure pads and holding fixtures.
When mounting holes are drilled, a general practice
with extruded aluminum, surface cleanup is important.
Chamfers must be avoided because they reduce heat
transfer surface and increase mounting stress. The edges
should be broken to remove burrs which cause poor contact between device and heat sink and which may puncture isolation material.
Many aluminum heat sinks are black-anodized to improve radiation ability and prevent corrosion. Anodizing
results in significant electrical but negligible thermal insulation.lt need only be removed from the mounting area
when electrical contact is required. Another treated aluminum finish is iridite, or chromate-acid dip, which offers
low resistance because of its thin surface, yet has good
electrical properties because it resists oxidation. It need
only be cleaned of the oils and films that collect in the
manufacture and storage of the sinks, a practice which
should be applied to all heat sinks. For economy, paint
is sometimes used for sinks; removal of the paint where
the semiconductor is attached is usually required because of paint's high thermal resistance. However, when
it is necessary to insulate the semiconductor package
from the heat sink, anodized or painted surfaces may be
more effective than other insulating materials which tend
to creep (i.e., they flow), thereby reducing contact
pressure.
It is also necessary that the surface be free from all
foreign material, film, and oxide (freshly bared aluminum
forms an oxide layer in a few seconds). Unless used immediately after machining, it is a good practice to polish
the mounting area with No. 000 steel wool, followed by
an acetone or alcohol rinse. Thermal grease should be
immediately applied thereafter and the semiconductor
attached as the grease readily collects dust and metal
particles.

THERMAL COMPOUNDS
To improve contacts, thermal joint compounds or
greases are used to fill air voids between all mating surfaces. Values ofthermal resistivity vary from 0.10 degrees

MOTOROLA THYRISTOR DEVICE DATA
1-7-2

Celsius-inches per watt for copper film to 1200°C-inIW for
air, whereas satisfactory joint compounds will have a resistivity of approximately 60°C-inIW. Therefore, the voids,
scratches, and imperfections which are filled with a joint
compound, will have a thermal resistance of about 1/20th
of the original value which makes a significant reduction
in the overall interface thermal resistance.
Joint compounds are a formulation of fine zinc particles
in a silicon oil which maintains a grease-like consistency
with time and temperature. Since some of these compounds do not spread well, they should be evenly applied
in a very thin layer using a spatula or lintless brush, and
wiped lightly to remove excess material. Some cyclic rotation of the package will help the compound spread
evenly over the entire contact area. Experience will indicate whether the quantity is sufficient, as excess will
appear around the edges of the contact area. To prevent
accumulation of airborne particulate matter, excess compound should be wiped away using a cloth moistened
with acetone or alcohol. These solvents should not contact plastic-encapsulated devices, as they may enter the
package and cause a leakage path or carry in substances
which might attack the assembly.
Data showing the effect of compounds on several package types under different mounting conditions is shown
in Table 7.1. The rougher the surface, the more valuable
the grease becomes in lowering contact resistance;
therefore, when mica insulating washers are used, use
of grease is generally mandatory. The joint compound
also improves the breakdown rating of the insulator and

is therefore highly desirable despite the handling problems created by its affinity for foreign matter. Some
sources of supply for joint compounds are shown in Appendix VIII.
Some users and heat sink manufacturers prefer not to
use compounds. This necessitates use of a heat sink with
lower thermal resistance which imposes additional cost,
but which may be inconsequential when low power is
being handled. Others design on the basis of not using
grease, but apply it as an added safety factor, so that if
improperly applied, operating temperatures will not exceed the design values.
MEASUREMENT OF INTERFACE THERMAL
RESISTANCE

Measuring the interface thermal resistance ROCS appears deceptively simple. All that's apparently needed is
a thermocouple on the semi, a thermocouple on the heat
sink, and a means of applying and measuring dc power.
However, ROCS is proportional to the amount of contact
area between the surfaces and consequently is affected
by surface flatness and finish and the amount of pressure
on the surfaces. In addition, placement of the thermocouples can have a significant influence upon the results.
Consequently, values for interface thermal resistance
presented by different manufacturers are in poor
agreement.
Consider the TO-220 package shown in Figure 7.3. The
mounting pressure at one end causes the other end where the die is located - to lift off the mounting surface

Table 7.1
Approximate Values for Interface Thermal Resistance and Other Package Data

(See Table 7.11 for Case Number to JEDEC Outline Cross-Reference)
Dry interface values are subject to wide variation because of extreme dependence upon surface conditions. Unless
otherwise noted the case temperature is monitored by a thermocouple located directly under the die reached through
a hole in the heat sink.
Package Type and Data
JEDEC
Outline

Description

Interface Thermal Resistance (OCIW)

Recommended
Mounting Hole
and Drill Size

Machine
Screw Size1

Torque
In-Lb

Metal-to-Metal

With Insulator

Dry

Lubed

Dry

Lubed

Type

DO-4

10-32 Stud
7/16" Hex

0.188, #12

10-32

20

0.3

0.2

1.6

0.8

3 mil
Mica

DO-5

1/4-28 Stud
11/16" Hex

0.250, #1

1/4-28

25

0.2

0.1

0.8

0.6

5mil
Mica

DO-21

Pressfit, 1/2"

See Figure 7.7

-

0.15

0.10

-

TO-204
(TO-3)

Diamond Flange

0.140, #28

6-32

6

0.5

0.1

1.3

0.36

3mil
Mica

TO-126

Thermopad
1/4" x 3/8"

0.133, #33

4-40

6

2

1.3

4.3

3.3

2 mil
Mica

TO-127

Thermopad
1/2" x 5/8"

0.140, #26

6-32

8

1.6

0.8

2.6

1.8

2mil
Mica

TO-220AB

Thermowatt

0.140, #28

6-32

8

1.2

1

3.4

1.6

2 mil
Mica

-

-

See
Note

1

1,2

NOTE 1. See Figures 7.8 and 7.11 for additional data on TO-204 and TO-220 packages.
NOTE 2. Screw not insulated.

.

MOTOROLA THYRISTOR DEVICE DATA
1-7-3

:

.

~/

.

E.I.A.

•

MOTOROLA

Figure 7.3. JEDEC TO-220 Package Mounted to Heat
Sink Showing Various Thermocouple Locations and
Lifting Caused by Pressure at One End

slightly. To improve contact, Motorola TO-220 packages
are slightly concave and use of a spreader bar under the
screw lessens the lifting, but some is inevitable with a
single-ended package.
The thermocouple locations are shown:
a. The Motorola location is directly under the die
reached through a hole in the heat sink. The thermocouple is held in place by a spring which forces the thermocouple into intimate contact with the bottom of the
semi's case.
b. The EIA location is close to the die on the top surface
ofthe package base reached through a blind hole drilled
through the molded body. The thermocouple is swaged
in place.
c. The Thermalloy location is on the top portion of the
tab between the molded body and the mounting screw.
The thermocouple is soldered into position.
Temperatures at the three locations are generally not
the same. Consider the situation depicted in the figure.
Because the only area of direct contact is around the
mounting screw, nearly all the heat travels horizontally
along the tab from the die to the contact area. Consequently, the temperature at the EIA location is hotter than
at the Thermalloy location and the Motorola location is
even hotter. Since junction-to-sink thermal resistance is
constant for a given setup, junction-to-case values decrease and case-to-sink values increase as the case thermocouple readings become warmer.
There are examples where the relationship between
the thermocouple temperatures are different from the
previous situation. If a mica washer with grease is installed between the semi package and the heat sink, tightening the screw will not bow the package; instead, the
mica will be deformed. The primary heat conduction path
is from the die through the mica to the heat sink. In this
case, a small temperature drop will exist across the vertical dimension of the package mounting base so that the
thermocouple at the EIA location will be the hottest. The
thermocouple temperature at the Thermalloy location
could be close to the temperature at the EIA location as
the lateral heat flow is generally small.
The EIA location is chosen to obtain the highest tem-

perature on the case. It is of significance because power
ratings are supposed to be based on this reference point.
Unfortunately, the placement of the thermocouple is tedious and leaves the semiconductor in a condition unfit
for sale.
The Motorola location is chosen to obtain the highest
temperature of the case at a point where, hopefully, the
semi is making contact to the heat sink, since heat sinks
are measured from the point of semi contact to the ambient. Once the special heat sink to accommodate the
thermocouple has been fabricated, this method lends itself to production testing and does not mark the device.
However, this location is not easily accessible to the user.
The Thermalloy location is convenient and is often
chosen by equipment manufacturers. However, it also
blemishes the case and may yield results differing up to
1°C/W for a TO-220 package mounted to a heat sink without thermal grease and no insulator. This error is small
when compared to the heat dissipators often used with
this package, since power dissipation is usually a few
watts. When compared to the specified junction-to-case
values of some of the higher power semiconductors becoming available, however, the difference becomes significant, and it is important that the semiconductor manufacturer and equipment manufacturer use the same
reference point.
Another method of establishing reference temperatures utilizes a soft copper washer (thermal grease is
used) between the semiconductor package and the heat
sink. The washer is flat to within 1 mil/inch, has a finish
better than 63 winch, and has an imbedded thermocouple near its center. This reference includes the interface
Table 7.11
Cross Reference Chart

Motorola Case Number to JEDEC
Outline Number and Table 7.1 Reference

JEDEC Number

Motorola
Number

Old

New

Reference In
Table 7.1

54-05
61-03
63-02
77-05
86-01
90-05
174-04
175-03
221A-04
235-03
263-04
310-02
311-02
326-01

TO-3 2
TO-3 2
00-42
TO-126 1,2
00-41,2
TO-1271,2
00-211,2
00-51,2
TO-220AB
00-51,2
00-51,2
00-211,2
00-51,2
TO-32

TO-204AE
TO-204AE
TO-203AE
TO-225AA
TO-203AA
TO-225AB
TO-208AA
TO-203AB
TO-220AB
TO-203AB
to-203AB
TO-208AA
TO-203AB
TO-204AA

TO-3
TO-3
00-4
TO-126
00-4
TO-127
00-21
00-5
TO-220AB
00-5
00-5
00-21
00-5
TO-3

NOTE 1. Would fit within this family outline if registered with JEDEC.
NOTE 2. Not within all JEDEC outline dimensions. The data in Table 7.1
and suggested mounting hardware and procedures generally
apply.

MOTOROLA THYRISTOR DEVICE DATA
1-7-4

resistance under nearly ideal conditions and is therefore
application-oriented. It is also easy to use and yields reproducible results. At this printing, however, sufficient
data to compare results to other methods is not available.
The only way to get accurate measurements of the
interface resitance is to also test for junction-to-case thermal resistance at the same time. If the junction-to-case
values remain relatively constant as insulators are
changed, torque varied, etc., then the case reference
point is satisfactory.

insulator between the semiconductor and the heat sink.
Where heat sink isolation is not possible, because of
safety reasons or in instances where a chassis serves as
a heat sink or where a heat sink is common to several
devices, insulators are used to isolate the individual components from the heat sink.
When an insulator is used, thermal grease assumes
greater importance than with a metal-to-metal contact,
because two interfaces exist instead of one and some
materials, such as mica, have a markedly uneven surface.
Reduction of interface thermal resistance of between 2
to 1 and 3 to 1 are typical when gre;ase is used.
Data obtained by Thermalloy, showing interface resistance for different insulators and torque applied to TO-3
and TO-220 packages, are shown in Figure 7.4 for bare
surfaces and Figure 7.5 for greased surfaces. It is obvious
that with some arrangements, the interface thermal resistance exceeds that of the semiconductor (junction to
case). When high power is handled, beryllium oxide is

INSULATION CONSIDERATIONS
Since it is most expedient to manufacture power semiconductors with collectors or anodes electrically common to the case, the problem of isolating this terminal
from ground is a common one. For lowest overall thermal
resistance, it is best to isolate the entire heat sink/semiconductor structure from ground, rather than to use an

~

1.8

w

-

t--

<.>

z
t-~
en 1.4

iii
w
rr:

.....
<[

TJERMALFiLM,

o.oJ ~ III, \ I -

iHERMA~FILM
1"""''/
-I
II

r--

MICA. 0.003" "

//

/'

MICA, 0.003"'/

::;;;
rr:
w

HARD ANODIZE, 0.020"

:J:
I-

""
Z

~

~

0.6

en

<3

@0.2
a::

_
2

//

MICA. 0.002" '" ,/

ALUMINUM OXIDE, 0.062" '/"
SILICONE RUBBER, 0.012"
BERYLLIUM OXIDE, 0.062" .....
NO INSULATOR
[
250 PSI INTERFACE PRESSURE 500 PSI-

~ARD ANpDIZE

•

o

4
5
MOUNTING SCREW TORQUE IIN·LBS)
(a). TO-3

2

NO INSULATOR / '

I
4
MOUNTING SCREW TORQUE IIN·LBS)

(b). TO-220AB

Figure 7.4. Interface Thermal Resistance Without Thermal Grease as a Function of Mounting Screw
Torque Using Various Insulating Materials

~

0.8

w

<.>

z

~

~
~

0.6

----

""z

~

0.2

5

~

rr:

0

f- MICA, 0.003"

MICA. 0.003':vr=
ALUMINUM OXIDE, 0.062"
HARD ANODIZE, 0.020"

/

I--" MICA, 0.002"

I--' HARD ANODIZE

;

-

/'
:--250 PSI

2

THERMALFILM I II .....

II THERM~LFILM 1'1 0.002"

ffi 0.4
~

2.5

SILICONE RUBBER
THERMALFILM II, 0.002"

r--

I--' NO INSULATOR

BERYLLIUM OX\~
NO INSULATOR

I

INTERFACE PRESSURE 500 PSI-

0.5

3
4
5
MOUNTING SCREW TORQUE IIN·LBS)

2

4
MOUNTING SCREW TORQUE (IN·LBS)
(b). TO-220AB

(a). TO-3

Figure 7.5. Interface Thermal Resistance Using Thermal Grease as a Function of Mounting Screw Torque Using
Various Insulating Materials
.

;

.

;

.~: "",:

....

.{~'

;

~»

MOTOROLA THYRISTOR DEVICE DATA
1-7-5

•

280

~ 200

~160

/

1/

~

z120

I
77
~ 80
!fl /I/I
IE 40

o
w

•

range of physical deflection - generally 20% to 80% thereby maintaining an optimum force on the package.
When installing, the assembler applies torque until the
washer depresses to half its original height. (Tests should
be run prior to setting up the assembly line to determine
the proper torque for the fastener used to achieve 50%
deflection.) The washer will absorb any cyclic expansion
of the package or insulating washer caused by temperature changes. Bell type washers are the key to successful
mounting of devices requiring strict control of the mounting force or when plastic hardware is used in the mounting scheme.
Motorola washers designed for use with the Thermopad package maintain the proper force when properly
secured. They are used with the large face contacting the
packages.

I

240

7

./

TO!127
1/
TO·126

/

/

./

--

II

a
a

20
40
60
80
DEFLECTION OF WASHER DURING MOUNTING (%)

100

Figure 7.6. Characteristics of the Ben Compression
Washers Designed for Use with Thermopad
Semiconductors

MACHINE SCREWS
Machine screws and nuts form a trouble-free fastener
system for all types of packages which have mounting
holes. Torque ratings apply when dry; therefore, care
must be exercised when using thermal grease to prevent
it from getting on the threads as inconsistent torque readings result. Machine screw heads should not directly contact the surface of any of the Thermopad plastic package
types as the screw heads are not sufficiently flat to provide properly distributed force.

unquestionably the best choice. Thermafilm is Thermalloy's tradename for a polyimide material which is also
commonly known as Kapton*; this material is fairly pop·
ular for low power applications because it is low cost,
withstands high temperatures and is easily handled, in
contrast to mica which chips and flakes easily.
When using insulators, care must be taken to keep the
mating surfaces clean. Small particles of foreign matter
can puncture the insulation, rendering it useless or seriously lowering its dielectric strength. In addition, particularly when voltages higher than 300 V are encountered, problems with creepage may occur. Dust and other
foreign material can shorten creepage distances significantly so that having a clean assembly area is important.
Surface roughness and humidity also lower insulation
resistance. Use of thermal grease usually raises the
breakdown voltage of the insulation system. Because of
these factors, which are not amenable to analysis, high
potential testing should be done on prototypes and a
large margin of safety employed. In some situations, it
may be necessary to substitute "empty" packages for the
semiconductors to avoid shorting them or to prevent the
semiconductors from limiting the voltage applied during
the high potential test.

SELF-TAPPING SCREWS
Under some conditions, sheet-metal screws are acceptable. However, during the tapping process with a
standard screw, a volcano-like protrusion will develop in
the metal being threaded; a very unsatisfactory surface
results. When used, a speed-nut must be used to secure
a standard screw, or the type of screw must be used
which roll-forms machine screw threads.
EYELETS
Successful mounting can also be accomplished with
hollow eyelets provided an adjustable, regulated pressure press is used such that a gradually increasing pressure is used to pan the eyelet. Use of sharp blows could
damage the semiconductor die.
RIVETS
When a metal flange-mount package is being mounted
directly to a heat sink, rivets can be used. Rivets are not
a recommended fastener for any of the plastic packages
except for the tab-mount type. Aluminum rivets are preferred over steel because less pressure is required to set
the rivet and thermal conductivity is improved.

FASTENER AND HARDWARE
CHARACTERISTICS
Characteristics of fasteners, associated hardware, and
the tools to secure them determine their suitability for
use in mounting the various packages. Since many problems have arisen because of improper choices, let us look
at the basic characteristics of several types of hardware.

INSULATORS AND PLASTIC HARDWARE
Because of its relatively low cost and low thermal resistance, mica is still widely used to insulate semiconductor packages from heat sinks despite its tendency to
chip and flake. It has a further advantage in that it does
not creep or flow so that the mounting pressure will not
reduce with time in use. Plastic materials, particularly

COMPRESSION WASHERS
A very useful piece of hardware is the bell-type
compression washer. As shown in Figure 7.6, it has the
ability to maintain a fairly constant pressure over a wide
*®DuPont

~fJtt!t~';flfU'jyf.lif;lt!J.Jll.!+~.<&;(iY)tlhLtX'$"'i7~;"'''~.l,Uf!;£J.
l"'~AJ"':7Mi,w:~ML.£~n'it~ .".wu f",-.g~:f~~ .
b.
~y,
~FW"~~~,.:~,,4." ~W~.;;.T~ivr~~'~~Jt.~.:.. ~~~·~~:·~ft~J.,.~~~~ I
••••

" ' ...

MOTOROLA THYRISTOR DEVICE DATA
1-7-6

.

hardware available for a number of different packages.
Consult the Hardware Data Sheet for dimensions of the
components and part numbers.
Specific fastening techniques are discussed in the remainder of this chapter for the following categories of
semiconductor package.
1) Stud mount: 10-32 UNF-24
1/4-28 UNF-24
2) Flange mount: TO-3
3) Pressfit: 00-21
4) Thermopad®: TO-225AA/225AB or 225 Family
5) Thermowatt®: TO-220 Family

,
@)_MICAWASHER

SEATING PLANE

@_TEFLON BUSHING
I

10-32UNF-2A

~

STUD MOUNT
Mounting errors with stud-mounted parts are generally confined to application of excessive torque or
tapping the stud into a threaded heat sink hole. Both
these practices may cause the hex base to warp, which
may crack the semiconductor die. The best fastening
method is to use a nut and washer; the details are
shown in Figure 7.7.

HEATSINK-~
DIM

A
C
F

MILLIMETERS
INCHES
MIN
MAX
MIN MAX
- 111.10
- 10.437
7.87
0.310
1.78TYP
0.070 TYP
2.29
2.79 0.090 0.110
10.72 11.48 0.422 0.452
16.76
0.660
15.49
0.610

G
J
K
L
NOTE:
1. DIM "G" MEASUREO AT CAN.

-

CASE 86-01

2N4167-2N4174
STYLE 1:

@_MICAWASHER

@_

FLAT STEEL WASHER

!

~-

~

FLANGE MOUNT
Few known mounting difficulties exist with this type of
package. The rugged base and distance between die and
mounting holes combine to make it extremely difficult to
warp, unless mounted on a surface which is badly bowed
or unless one side is tightened excessively before the
other screw is started. A typical mounting installation is
shown in Figure 7.8. Machine screws, self-tapping

SOLDER TERMINAl

$ _
I

STEEL LOCK WASHER

PIN 1. GATE
2. CATHODE
STUD: ANODE

I

@_HEXNUT
NO.6 SHEET METAL SCREWS

I

Figure 7.7. Mounting Details for Stud-Mounted
Semiconductors
Teflon*, will flow. When plastic materials form part of
the fastening system, a compression washer is a valuable
addition which assures that the assembly will not loosen
with time.

FASTENING TECHNIQUES
Each of the various types of packages in use requires
different fastening techniques. Details pertaining to each
type are discussed in following sections. Some general
considerations follow.
To prevent galvanic action from occurring when devices are used on aluminum heat sinks in a corrosive
atmosphere, many devices are nickel- or gold-plated.
Consequently, precautions must be taken not to mar the
finish.
Manufacturers which provide heat sinks for general use
and other associated hardware are listed in Appendix VIII.
Manufacturer's catalogs should be consulted to obtain
more detailed information. Motorola also has mounting

Figure 7.8. Mounting Details for Flat-Base Mounted
Semiconductors (TO-204AE Shown)

*Trademark E.I. DuPont

MOTOROLA THYRISTOR DEVICE DATA
1-7-7

•

~

SHOULDER RING
0.501
I 0.505 DIA.

I·

-..L

0.24~

T

--l

CHAMFER

l j r 0.D1 NOM.
~W'
I

.1

V

The hole edge must be chamfered as shown to prevent shearing
off the knurled edge of the case during press·in. The pressing force
should be applied evenly on the shoulder ring to avoid tilting
or canting of the case in the hole during the pressing operation.
Also, the use of a thermal joint compound will be of considerable
aid. The pressing force will vary from 250 to 1000 pounds,
depending upon the heat sink material. Recommended hardnesses

1°.01 NOM.
fA, HEATS!NK

~~

f-- 0.0499 ± 0.001 DIA.

Heat Sink Mounting

•

.~~

are: copper-less than 50 on the Rockwell F scale; aluminum-less

~OO~

-==~HEATSINKPLATE

INTIMATE
CONTACT AREA

COMPLm
KNURL CONTACT
AREA

than 65 on the Brinell scale. A heat sink as thin as 1/8" may be
used, but the interface thermal resistance will increase in direct
proportion to the contact area. A thin chassis requ ires the addition
of a backup plate.

THIN CHASSIS

Thin-Chassis Mounting
Figure 7.9. Mounting Details for Press-Fit Semiconductors
screws, eyelets, or rivets may be used to secure the
package.
PRESS FIT
For most applications, the press-fit case should be
mounted according to the instructions shown in Figure
7.9. A special fixture meeting the necessary requirements
is a must.
THERMOPAD
The Motorola Thermopad plastic power packages have
been designed to feature minimum size with no compromise in thermal resistance. This is accomplished by
die-bonding the silicon chip on one side of a thin copper
sheet; the opposite side is exposed as a mounting surface. The copper sheet has a hole for mounting, i.e., plastic is molded enveloping the chip but leaving the mounting hole open. The benefits of this construction are
obtained at the expense of paying strict attention to the
mounting procedure. Success in mounting Thermopad
devices depends largely upon using a compression
washer which provides a controllable pressure across a
large bearing surface. Having a small hole with no chamber and a flat, burr-free, well-finished heat sink are also
important requirements.
Several types of fasteners may be used to secure the
Thermopad package; machine screws, eyelets, or clips
are preferred. With screws or eyelets, a bell compression
washer should be used which applies the proper force to
the package over a fairly wide range of deflection. Screws
should not be tightened with any type of air-driven torque
gun or equipment which may cause high impact. Characteristics of the recommended washers are shown in
Figure 7.6
Figure 7.10 shows details of mounting TO-225AA or
TO-225AB devices. Use of the clip requires caution to
insure that adequate mounting force is applied. When

electrical isolation is required, a bushing inside the
mounting hole will insure that the screw threads do not
contact the metal base.
THERMOWATT
The popular TO-220 Thermowatt package also requires
attention to mounting details. Figure 7.11 shows suggested mounting arrangements and hardware. The rectangular washer shown in Figure 7.11 (a) is used to minimize distortion of the mounting flange; excessive
distortion could cause damage to the semiconductor
chip. Use of the washer is only important when the size
ofthe mounting hole exceeds 0.140 inch (6-32 clearance).
Larger holes are needed to accommodate insulating
bushings when the screw is electrically connected to the
case; however, the holes should not be larger than necessary to provide hardware clearance and should never
exceed a diameter of 0.250 inch. Flange distortion is also
possible if excessive torque is used during mounting. A
maximum torque of 8 inch-pounds is suggested when
using a 6-32 screw.
Care should be exercised to assure that the tool used
to drive the mounting screw never comes in contact with
the plastic body during the driving operation. Such contact can result in damage to the plastic body and internal
device connections. To minimize this problem, Motorola
TO-220 packages have a chamfer on one end. TO-220
packages of other manufacturers may need a spacer or
combination spacer and isolation bushing to raise the
screw head above the top surface of the plastic.
In situations where the Thermowatt package is making
direct contact with the heat sink, an eyelet may be used,
provided sharp blows or impact shock is avoided.
FREE AIR AND SOCKET MOUNTING
In applications where average power dissipation is of
the order of a watt or so, power semiconductors may be

MOTOROLA THYRISTOR DEVICE DATA
1-7-8

mounted with little or no heat-sinking. The leads of the
various metal power packages are not designed to support the packages; their cases must be firmly supported
to avoid the possibility of cracked glass-to-metal seals
around the leads. The plastic packages may be supported
by their leads in applications where high shock and vibration stresses are not encountered and where no heat
sink is used. The leads should be as short as possible to
increase vibration resistance and reduce thermal
resistance.
In many situations, because its leads are fairly heavy,
the TO-22SAB package has supported a small heat sink;

=/
HEAT SINK
SURFACE
\

however, no definitive data is available. When using a
small heat sink, it is good practice to have the sink rigidly
mounted such that the sink or the board is providing total
support for the semiconductor. Two possible arrangements are shown in Figure 7.12. The arrangement in
Figure 7.12Ia) could be used with any plastic package,
but the scheme of part Figure 7.12Ib) is more practical
with Case 77 or Case 90 Thermopad devices. With the
other package types, mounting the transistor on top of
the heat sink is more practical.
In certain situations, in particular where semiconductor
testing is required, sockets are desirable. Manufacturers

MACHINE SCREW OR
SHEET METAL SCREW

'
~~
COMPRESSION WASHER

COMPRESSION WASHER

I

~
~

THERMOPAD PACKAGE

.CA ....

R.~"'AlI

SPRING LOCK WASHER
MACHINE OR SPEED
NUT

lal. Machine Screw Mounting

Ibl. Eyelet Mounting

PARTS C50272'()11 AND C51451'()11
PART C52825-011

MATERIAL: HEAT·TREATED SPRING
STEEL 0.011 THICKNESS

MATERIAL: HEAT·TREATED SPRING
STEEL 0.011 THICKNESS

~

1 ,sss

~ 0.047-0.056

Part

P

C50272·011
C51451'()11

0.046-0.055
0.030-0.034

~"":
~
PA~EL

r"=f

0.105

PANEL

_ 0.480

TO-225AB Clip

RANGE

TO-225AA Clip
lei. Tinnerman Clips IEaton Corp.1

Figure 7.10. Recommended Mounting Arrangements for TO-225AA and TO-22SAB Thermopad Packages

MOTOROLA THYRISTOR DEVICE DATA
1-7-9

•

have provided sockets for all the packages available from
Motorola. The user is urged to consult manufacturers'
catalogs for specific details.

(al

THERMOPAD
HEAT SINK SURFACE

(al. Preferred Arrangement
for Isolated or Non-isolated
Mounting. Screw is at Semiconductor Case Potential.
6-32 Hardware is Used.

(bl. Alternate Arrangement
for Isolated Mounting
when Screw must be at
Heat Sink Potential.
4-40 Hardware is Used.

Use Parts Listed
Below.

Use Parts Listed Below.
..

.. T-6-32HEX ~
HEAD SCREW

II!

/

CIRCUIT BOARD

TWIST LOCKS
OR
SOLDERABLE
LEGS

4-40 HEX HEAD SCREW

(bl

NYLON INSULATING BUSHING

~

~

11)RECTANGULAR STEEL
WASHER
\

!

"""N~crO~' I

i

ICASE 22~ :21A):

SEMICONDUCTOR

I

:

/

ICASE

i~)===:::::;>

!
:::::;:::::::::::=======:::J

12)RECTANGULAR MICA

INSULAT~

CIRCUIT BOARD

I

C !:::::::

HEAT SINK

"

RECTANGULAR
MICA INSULATOR

"- r-~----,
'\

12)NYLON BUSHING

HEAT SINK

~

HANDLING PINS, LEADS, AND TABS

! L,

13)FLAT WASHE=R--''-r'--..J
....
/
14)COMPRESSION,
OR LOCK WASHER

COMPRESSION WASHER

..........\'""""~:-'--rl~(

6-32 HEX NUT

"(x:

Figure 7.12. Methods of Using Small Heat Sinks with
Plastic Semiconductor Packages

i

______ 4-40 HEX NUT

Xl

11) USED WITH THIN CHASSIS ANDIOR LARGE HO~E
12) USED WHEN ISOLATION IS REQUIRED
13) REQUIRED WHEN NYLON BUSHING AND LOCK WASHER ARE USED
14) COMPRESSION WASHER PREFERRED WHEN PLASTIC INSULATING
MATERIAL IS USED
TORQUE REQUIREMENTS
INSULATED 0.68 N·M 16 IN·LBS) MAX
NONINSULATED 0.9 N·M 18 IN·LBS) MAX

Figure 7.11. Mounting Arrangements for
Thermowatt Packages

The pins and lugs of metal-packaged devices are not
designed for any bending or stress. If abused, the glassto-metal seals could crack. Wires may be attached using
sockets, crimp connectors, or solder, provided the datasheet ratings are observed.
The leads and tabs of the plastic packages are more
flexible and can be reshaped, although this is not a recommended procedure for users to do. In some cases, a
heat sink can be chosen which makes lead-bending unnecessary. Numerous lead- and tab-forming options are
available from Motorola. Preformed leads remove the
risk of device damage caused by bending from the users.
If, however, lead-bending is done by the user, several
basic considerations should be observed. When bending
the lead, it must be supported between the point of bending and the package. For forming small quantities of
units, a pair of pliers may be used to clamp the leads at
the case while bending with the fingers or another pair

MOTOROLA THYRISTOR DEVICE DATA
1-7-10

of pliers. For production quantities, a suitable fixture
should be made.
The following rules should be observed to avoid damage to the package.
1. A lead-bend radius greater than 1/16 inch is advisable
for TO-225AA, 1110 inch for TO-225AB and 1/32 inch for
TO-220.
2. No twisting of leads should be done at the case.
3. No axial motion of the lead should be allowed with
respect to the case.
The leads of plastic packages are not designed to withstand excessive axial pull. Force in this direction greater
than 4 pounds may result in permanent damage to the
device. If the mounting arrangement imposes axial stress
on the leads, a condition which may be caused by thermal
cycling, some method of strain relief should be devised.
An acceptable lead-forming method that provides this
relief is to incorporate an S-bend into the lead. Wirewrapping of the leads is permissible, provided that the
lead is restrained between the plastic case and the point
of the wrapping. The leads may be soldered; the maximum soldering temperature, however, must not exceed
275°C and must be applied for not more than 5 seconds
at a distance greater than 1/8 inch from the plastic case.
When wires are used for connections, care should be
exercised to assure that movement of the wire does not
cause movement of the lead at the lead-to-plastic
junctions.

CLEANING CIRCUIT BOARDS
It is important that any solvents or cleaning chemicals
used in the process of degreasing or flux removal do not
affect the reliability of the devices.
Alcohol and unchlorinated Freon solvents are generally
satisfactory for use with plastic devices, since they do
not damage the package. Hydrocarbons such as gasoline
may cause the encapsulant to swell, possibly damaging
the transistor die. Likewise, chlorinated Freon solvents
are unsuitable, since they may cause the outer package
to dissolve and swell.
When using an ultrasonic cleaner for cleaning circuit
boards, care should be taken with regard to ultrasonic
energy and time of application. This is particularly true
if the packages are free-standing without support.

THERMAL SYSTEM EVALUATION
Assuming that a suitable method of mounting the
semiconductor without damage has been achieved, it is
important to ascertain whether the junction temperature
is within bounds.
In applications where the power dissipated in the semiconductor consists of pulses at a low duty cycle, the instantaneous or peak junction temperature, not average
temperature, may be the limiting condition. In this case,
use must be made of transient thermal resistance data.
For a full explanation of its use, see Motorola Application
Note, AN569.

Other applications, notably RF power amplifiers or
switches driving highly reactive loads, may create severe
current crowding conditions which render the traditional
concepts of thermal resistance or transient thermal
impedance invalid. In this case, transistor safe operating
area or thyristor di/dt limits, as applicable, must be
observed.
Fortunately, in many applications, a calculation of the
average junction temperature is sufficient. It is based on
the concept of thermal resistance between the junction
and a temperature reference point on the case. (See Appendix VII). A fine wire thermocouple should be used,
such as #32AWG, to determine case temperature. Average operating junction temperature can be computed
from the following equation:
where

TJ = TC + RruC x Po
TJ = junction temperature (OC)
TC = case temperature (OC)
RruC = thermal resistance junction-to-case as
specified on the data sheet (OCIW)
Po = power dissipated in the device (W).

The difficulty in applying the equation often lies in
determining the power dissipation. Two commonly used
empirical methods are graphical integration and
substitution.

GRAPHICAL INTEGRATION
Graphical integration may be performed by taking oscilloscope pictures of a complete cycle of the voltage and
current waveforms, using a limit device. The pictures
should be taken with the temperature stabilized. Corresponding points are then read from each photo at a suitable number of time increments. Each pair of voltage and
current values are multiplied together to give instantaneous values of power. The results are plotted on linear
graph paper, the number of squares within the curve
counted, and the total divided by the number of squares
along the time axis. The quotient is the average power
dissipation.

SUBSTITUTION
This method is based upon substituting an easily measurable, smooth dc source for a complex waveform. A
switching arrangement is provided which allows operating the load with the device under test, until it stabilizes
in temperature. Case temperature is monitored. By
throwing the switch to the "test" position, the device
under test is connected to a dc power supply, while another pole of the switch supplies the normal power to
the load to keep it operating at full power level. The dc
supply is adjusted so that the semiconductor case temperature remains approximately constant when the
switch is thrown to each position for about 10 seconds.
The dc voltage and current values are multiplied together
to obtain average power. It is generally necessary that a
Kelvin connection be used for the device voltage
measurement.

r~k~~~~~·~·~~~~UR~"~"~""""
MOTOROLA THYRISTOR DEVICE DATA
1-7-11

•

MOTOROLA THYRISTOR DEVICE DATA
1·7·12

CHAPTER 8
RELIABILITY AND QUALITY
As the price of semiconductor devices decreases, reliability and quality have become increasingly important
in selecting a vendor. In many cases these considerations
even outweigh price, delivery and service.
The reason is that the cost of device fallout and warranty repairs can easily equal or exceed the original cost
of the devices. Consider the example shown in Figure
8.1. Although the case is simplistic, the prices and costs
are realistic by today's standards. In this case, the cost
offailures raised the device cost from 15 cents to 21 cents,
an increase of 40%. Clearly, then, investing in quality and
reliability can pay big dividends.
With nearly three decades of experience as a major
semiconductor supplier, Motorola is the largest manufacturer of discrete semiconductors in the world today.
Since semiconductor prices are strongly influenced by
manufacturing volume, this leadership has permitted
Motorola to be strongly competitive in the marketplace
while making massive investments in equipment, processes and procedures to guarantee that the company's
after-purchase costs will be among the lowest in the industry. As a result of the procedures, Motorola is pro-'
jecting an outgoing quality level of less than 3 PPM by
1992.
Given:
Purchase = 100,000 components @ 15¢ each
Assumptions: Line Fallout = 0.1%
Warranty Failures = 0.01%
Components Cost = 100,000 x 15¢ = $15,000
100 x $40 =
4,000
Line Fallout Cost=
@ $40 per repair
10 x $200 =
2,000
Warranty Cost =
@ $200 per repair
$21,000
Adjusted Cost
Per Component = $21,000 + 100,000 = 21¢

Quality and reliability are two essential elements in
order for a semiconductor company to be successful in
the marketplace today. Quality and reliability are interrelated because reliability is quality extended over the
expected life of the product.
Quality is the assurance that a product will fulfill customers' expectations.
Reliability is the probability that a product will perform
its intended function satisfactorily for a prescribed life
under certain stated conditions.
The quality and reliability of Motorola thyristors are
achieved with a four step program:
1) Thoroughly tested designs and materials
2) Stringent in-process controls and inspections
3) Process average testing along with 100% quality assurance redundant testing
4) Reliability verifications through audits and reliability
studies

ESSENTIALS OF RELIABILITY
Paramount in the mind of every semiconductor user is
the question of device performance versus time. After
the applicability of a particular device has been established, its effectiveness depends on the length of trouble
free service it can offer. The reliability of a device is exactly that - an expression of how well it will serve the
customer. Reliability can be redefined as the probability
offailure free performance, under a given manufacturer's
specifications, for a given period of time. The failure rate
of semiconductors in general, when plotted versus a long
period of time, exhibit what has been called the "bath
tub curve" (Figure 8.2).

INFANT
MORTALITY

RANDOM FAILURE
MECHANISM

WEAROUT
PHENOMENON

Definitions:
Line Fallout = Module or subassembly failure
requiring troubleshooting,
parts replacement and retesting
Warranty Failure = System field failure
requiring in warranty
repair
Figure 8.1. Component Costs to the User
(including line fallout and warranty costsl

Figure 8.2. Failure Rate of Semiconductor

MOTOROLA THYRISTOR DEVICE DATA
1-8-1

•

RELIABILITY MECHANICS

Since reliability evaluations usually involve only samples of an entire population of devices, the concept of
the central limit theorem applies and a failure rate is
calculated using the,\2 distribution through the equation:
,\ .;; ,\2 (a, 2r + 2)
2 nt
,\2

•

T = Absolute temperature, °Kelvin (OC

where a = 100 - cI
100
= Failure rate

cl

= Confidence limit in percent

+

273°)

o = Activation energy in electron volts (ev)
K = Soltzman's constant = 8.62 x 10- 5 evrK
This equation can also be put in the form:

= Number of rejects

n

Where R(t} = reaction rate as a function of time and
temperature
Ro = A constant
t = Time

= chi squared distribution

,\

Years of semiconductor device testing have shown that
temperature will accelerate failures and that this behavior
fits the form of the Arrhenius equation:
R(t} = Ro(t}e- o/ KT

AF = Acceleration factor

= Number of devices

T2 = User temperature

= Duration of tests

T1 = Actual test temperature

The confidence limit is the degree of conservatism desired in the calculation. The central limit theorem states
that the values of any sample of units out of a large
population will produce a normal distribution. A 50% confidence limit is termed the best estimate, and is the mean
of this distribution. A 90% confidence limit is a very conservative value and results in a higher,\ which represents
the point at which 90% of the area of the distribution is
to the left of that value (Figure 8.3).

5O%Cl

RELIABILITY QUALIFICATIONS/EVALUATIONS
OUTLINE:

X
I
I

I
I

The Arrhenius equation states that reaction rate increases exponentially with the temperature. This produces a straight line when plotted on log-linear paper
with a slope expressed by o. 0 may be physically interpreted as the energy threshold of a particular reaction or
failure mechanism. The overall activation energy exhibited by Motorola thyristors is 1 ev.

9O%Cl

/C'Z

S

A, FAilURE RATE

Figure 8.3. Confidence Limits and the Distribution of
Sample Failure Rates

Some of the functions of Motorola Reliability and Quality Assurance Engineering are to evaluate new products
for introduction, process changes (whether minor or
major), and product line updates to verify the integrity
and reliability of conformance, thereby ensuring satisfactory performance in the field. The reliability evaluations
may be subjected to a series of extensive reliability testing, such as in the tests performed section, or special
tests, depending on the nature of the qualification
requirement.
AVERAGE OUTGOING QUALITY (AOQ)

The term (2r + 2) is called the degrees of freedom and
is an expression of the number of rejects in a form suitable to ,\2 tables. The number of rejects is a critical factor
since the definition of rejects often differs between manufacturers. Due to the increasing chance of a test not
being representative of the entire population as sample
size and test time are decreased, the ,\2 calculation produces surprisingly high values of ,\ for short test durations even though the true long term failure rate may be
quite low. For this reason relatively large amounts of data
must be gathered to demonstrate the real long term failure rate. Since this would require years of testing on
thousands of devices, methods of accelerated testing
have been developed.

With the industry trend to average outgoing qualities
(ADQ) of less than 100 PPM, the role of device final test,
and final outgoing quality assurance have become a key
ingredient to success. At Motorola, all parts are 100%
tested to process average limits then the yields are monitored closely by product engineers, and abnormal areas
offallout are held for engineering investigation. Motorola
also 100% redundant tests all de parameters again after
marking the device to further reduce any mixing problems associated with the first test. Prior to shipping, the
parts are again sampled, tested to a tight sampling plan
by our Quality Assurance department, and finally our
outgoing final inspection checks for correct paperwork,
mixed product, visual and mechanical inspections prior
to packaging to the customers.

MOTOROLA THYRISTOR DEVICE DATA
1-8-2

AVERAGE OUTGOING QUALITY (AOQ)
AOa = Process Average x Probability of Acceptance x
106 (PPM)
A
_ No. of Reject Devices
P
rocess verage - No. of Devices Tested
..
No. of Lots Rejected
Probability of Acceptance = (1 - No. of Lots Tested)

Case 22-03/TO-206AA
(TO-lSI

Devices Available:
SCRs. UJTs, PUTs
Current Range: to 0.5 A
Voltage Range: 25 to 200 V

106 = To Convert to Parts Per Million
AOa = No. of Reject Devices x
No. of Devices Tested
(1 _ No. of Lots Rejected) x 106(PPM)
No. of Lots Tested
Current AOa levels (1988) are less than 50 PPM. The
projected goal, by 1992, is less than 3 PPM, a defect
rate so low that it becomes virtually invisible to the
user. Figure 8.4 shows AOO of Motorola Thyristors.

3000

Case 77-0S/TO-22SAA
(TO-1261

THYRIS~OR PPM I

4000

r-...

1000

1979
3264

Devices Available:
SCRs, TRIACs
Current Range: to 4 A
Voltage Range: 25 to 600 V

"- ~

'",

2000

1960
2561

1961
1546

1962
1057

Case 79-04/TO-20SAD
(TO-391

Devices Available:
SCRs
Current Range: to 1.6 A
Voltage Range: 25 to 600 V

*P~OJECTION

............

Case 29-04fTO-226AA
(TO-921

Devices Available:
SCRs, TRIACs, UJTs,
PUTs, SBSs
Current Range: to 0.8 A
Voltage Range: 25 to 600 V

I--1964
200

1985'
100

1966*
50

1987*
0

Figure 8.4. Average Outgoing Quality (AOQ) of
Motorola Thyristors
Case 221A-04fTO-220AB

THYRISTOR RELIABILITY
The reliability data described herein applies to Motorola's extensive offering of thyristor products for low and
medium current applications. The line includes not only
the pervasive Silicon Controlled Rectifiers (SCRs) and
TRIACs, but also a variety of Unijunction Transistors
(UJTs), Programmable Unijunction Transistors (PUTs),
Silicon Bidirectional Switches (SBSs), SIDACs and other
associated devices used for SCR and TRIAC triggering
purposes. Moreover, these devices are available in different package styles with overlapping current ranges to
provide an integral chip-and-package structure that yields
lowest cost, consistent with the overriding consideration
of high reliability.
The various packages and the range of electrical specifications associated with the resultant products are
shown in Figure 8.5.
To evaluate the reliability of these structures, production line samples from each type of package are being
subjected to a battery of accelerated reliability tests deliberately designed to induce long-term failure. Though
the tests are being conducted on a continuing basis, the

Devices Available:
SCRs, TRIACs
Current Range: to 40 A
Voltage Range: 50 to 1000 V

Case 267-03/Axial Lead
(Surmetic SOl

Devices Available:
SIDAC
Voltage Range: 104 to 240 V

Case 311-021
Press Fit/Stud

Devices Available:
SCRs, TRIACs
Current Range: to 55 A
Voltage Range: 25 to BOO V

Figure 8.5. Motorola Thyristor Packages
results so far are both meaningful and impressive. They
are detailed on the following pages in the hope that they
will provide for the readers a greater awareness of the
potential for thyristors in their individual application.

;).:'

MOTOROLA THYRISTOR DEVICE DATA
1-8-3

'

..'

.;,.'

THYRISTOR CONSTRUCTION THROUGH A
TIME TESTED DESIGN AND ADVANCED
PROCESSING METHODS

•

A pioneer in discrete semiconductor components and
the world's largest supplier thereof, Motorola has pyramided continual process and material improvements into
thyristor products whose inherent reliability meets the
most critical requirements of the market.
These improvements are directed towards long-term
reliability in the most strenuous applications and the
most adverse environments.

DIE GLASSIVATION
All Motorola thyristor die are glass-sealed with a Motorola patented passivation process making the sensitive
junctions impervious to moisture and impurity penetration. This imparts to low-cost plastic devices the same
freedom from external contamination formerly associated only with hermetically sealed metal packages. Thus,
metal encapsulation is required primarily for higher current devices that would normally exceed the powerdissipation capabilities of plastic packages - or for applications that specify the hermetic package.
HIGHLY MECHANIZED ASSEMBLY
Motorola uses many techniques to ensure quality manufacturing of its thyristor products. A few of the newest
techniques are (1) all diffusion steps are performed by
microprocessor-controlled diffusion tubes, (2) four point
probes are used to verify resistivity at each step during
wafer processing, (3) all chips are individually probed to
their electrical specifications, (4) wafer preparation for assembly includes laser scribing to separate the die while
in wafer form, (5) assembly furnaces are automated to
perform automatic insertion and removal of assembly
fixtures.

VOID-FREE PLASTIC ENCAPSULATION
A fifth generation plastic package material, combined
with improved copper piece-part designs, maximize
package integrity during thermal stresses. The void-free
encapsulation process imparts to the plastic package a
mechanical reliability (ability to withstand shock and vibration) even beyond that of metal packaged devices.

IN-PROCESS CONTROLS AND INSPECTIONS
INCOMING INSPECTIONS
Apparently routine procedures, inspection of incoming
parts and materials, are actually among the most critical
segments of the quality and reliability assurance pro-

gram. That's because small deviations from materials
specifications can traverse the entire production cycle
before being detected by outgoing Quality Control, and,
if undetected, could affect long-term reliability. At Motorola, piece-part control involves the services of three
separate laboratories ... Radiology, Electron Optics and
Product Analysis. All three are utilized to insure product
integrity:
Raw Wafer Quality, in terms of defects, orientation,
flatness and resistivity;
Physical Dimensions, to tightly specified tolerances;
Metal Hardness, to highly controlled limits;
Gaseous Purity and Doping Level;
Mold Compounds, for void-free plastic encapsulation.

IN-PROCESS INSPECTIONS
As illustrated in Figure B.6, every major manufacturing
step is followed by an appropriate in-process OA inspection. Quality control in wafer processing, assembly
and final test impart to Motorola standard thyristors a
reliability level that easily exceeds most industrial, consumer and military requirements ... built-in quality assurance aimed at insuring failure-free shipments of Motorola products.
RELIABILITY AUDITS
Reliability audits are performed following assembly.
Reliability audits are used to detect process shifts which
can have an adverse effect on long-term reliability. Extreme stress testing on a real-time basis, for each product
run, uncovers process abnormalities that may have escaped the stringent in-process controls. Typical tests include HTRB/FB (high-temperature reverse bias and forward bias) storage life and temperature cycling. When
abnormalities are detected, steps are taken to correct the
process.
OUTGOINGQC
The most stringent in-process controls do not guarantee strict adherence to tight electrical specifications.
Motorola's 100% electrical parametric test does - by
eliminating all devices that do not conform to the specified characteristics. Additional parametric tests, on a
sampling basis, provide data for continued improvement
of product quality. And to help insure safe arrival after
shipment, antistatic handling and packaging methods are
employed to assure that the product quality that has been
built in stays that way.
From rigid incoming inspection of piece parts and materials to stringent outgoing quality verification, assembly and process controls encompass an elaborate system
of test and inspection stations that ensure step-by-step
adherence to a prescribed procedure designed to yield a
high standard of quality.

MOTOROLA THYRISTOR DEVICE DATA
1-8-4

•
Figure 8.6. In-Process Quality Assurance Inspection Points for Thyristors

".;

RELIABILITY TESTS

BLOCKING LIFE TEST

Only actual use of millions of devices, under a thousand
different operating conditions, can conclusively establish
the reliability of devices under the extremes of time, temperature, humidity, shock, vibration and the myriads of
other adverse variables likely to be encountered in practice. But thorough testing, in conjunction with rigorous
statistical analysis, is the next-best thing. The series of
torture tests described in this document instills a high
confidence level regarding thyristor reliability. The tests
are conducted at maximum device ratings and are designed to deliberately stress the devices in their most
susceptible failure modes. The severity of the tests compresses into a relatively short test cycle the equivalent of
the stresses encountered during years of operation under
more normal conditions. The results not only indicate the
degree of reliability in terms of anticipated failures; they
trigger subsequent investigations into failure modes and
failure mechanisms that serve as the basis of continual
improvements. And they represent a clear-cut endorsement that, for Motorola thyristors, low-cost and high
quality are compatible attributes.

This test is used as an indicator of long-term operating
reliability and overall junction stability (quality). All semiconductor junctions exhibit some leakage current under
reverse-bias conditions. Thyristors, in addition, exhibit
leakage current under forward-bias conditions in the off
state. As a normal property of semiconductors, this junction leakage current increases proportionally with temperature in a very predictable fashion.
Leakage current can also change as a function of time
- particularly under high-temperature operation. Moreover, this undesirable "drift" can produce catastrophic
failures when devices are operated at, or in excess of,
rated temperature limits for prolonged periods.
The blocking life test operates representative numbers
of devices at rated (high) temperature and reverse-bias
voltage limits to define device quality (as measured by
leakage drifts) and reliability (as indicated by the number
of catastrophic failures*). The results of these tests are
shown in Table 8.1. Table 8.11 shows leakage-current drift
after 1000 hours HTRB.

:.:

MOTOROLA THYRISTOR DEVICE DATA
1-8-5

the internal manufacturing integrity ofthe package. Readouts at the various intervals offer information as to the
time period in which failures occur. Although devices are
not exposed to such extreme high temperatures in the
field, the purpose of this test is to accelerate any failure
mechanisms that could occur during long periods at actual storage temperatures_ Results of this test are shown
in Table 8.111.

Table 8.1. Blocking Life Test
High Temperature Reverse Bias (HTRB)
and High Temperature Forward Bias (HTFB)
Tat1Concitions

•

TOIl'
DevIco

TA
@RatodVottog.

Sampl.
Size

Dul'ltion

29-1141TO-226AA
(TO-921

lOO"C

1000

1000

1,000,000

I

n-05fT0-225AA
(TO-1261

II000e

1000

1000

1,000,000

0

22IA-ll4lTO-220AB

lOO"e

1000

1000

1,000,000

0

311-02lPress FitlStud

lOO"e

200

1000

200,000

0

22-D3IT0-206AA
(TO-lSI

II000e

200

1000

200,000

0

79-D4IT0-205AD
(T0-391

II000e

ISO

1000

lSO,OOO

0

29-041T0-226AA
(TO·92)

TA 150°C

10002000

400

1,500,000

0

267-03IAxial Lead
(Surmetic SOl

125°e

150

1000

lSO,OOO

0

77-05IT0-225AA
(10-126)

**

10002000

350

550,000

0

*Failures are at maximum rated values. The severe nature of these
tests is normally not seen under actual conditions.

221A-04IT0-220

1000

300

300,000

0

311-02lPress Fit/Stud

1000

125

125,000

0

22-03IT0-206AA
(TO-IS)

10002000

400

600,000

0

79-041T0-205AO
(TO-39)

10002000

100

150,000

0

267-03lAxial Lead
(Surmetic 501

1000

100

100,000

0

Cue

(Hou..'

Crtastrophk
Failures-

Hours

Table 8.111. High Temperature Storage Life

Case

Table 8.11. Leakage-Current Drift after 1000 Hours HTRB

I

I

VORM = 400 V

1

I

)A = lOJOC

Sample Duration
Test
Conditions Size (Hours)

Total
Catastrophic
Device
Failures'
Hours

*Failures are at maximum rated values. The severe nature of these
tests is normally not seen under actual conditions.

•

**Same for all.

:::

•••

STRESS TESTING THERMAL SHOCK

••
••

::

POWER CYCLING TEST

••
•••
•••

...

40,.A

•

•• :::.
20,.A

POWER CYCLING AND

..

o

••

+20,.A

How do the devices hold up when they are repeatedly
cycled from the off state to the on state and back to the
off state under conditions that force them to maximum
rated junction temperature during each cycle? The Power
Cycling Test was devised to provide the answers .
In this test, devices are subjected to full-rated, on-state
power until rated junction temperature (TJ) has been
reached. The devices are then turned off and TJ decreases to near ambient, at which time the cycle is
repeated.
This test is important to determine the integrity of the
chip and lead frame assembly since it repeatedly stresses
the devices to their maximum ratings. It is unlikely that
these worst-case conditions would be continuously encountered in actual use. Any reduction in TJ results in
an exponential increase in operating longevity. Table 8.IV
shows the results of power cycling.

+40,.A

Leakage Shift from I nitial Value

The favorable blocking-life-test drift results shown here are attributed to Motorola's
unique "glassivated junction" process which imparts a high degree of stability to the
devices.

HIGH TEMPERATURE STORAGE LIFE TEST
This test consists of placing devices in a high-temperature chamber. Devices are tested electrically prior to
exposure to the high temperature, at various time intervals during the test, and at the completion of testing.
Electrical readout results indicate the stability of the devices, their potential to withstand high temperatures, and

~~~~~~~~,~~~~~~~~.a~aHMD""MM
MOTOROLA THYRISTOR DEVICE DATA
1-8-6

Table B.lV. Power Cycling

Case

Test Conditions

29-04IT0-226AA
(TO-92)

IT(rms) = Maximum Rating
IlTJ = 70'C (30'C to 100'C)
or

77-05fTO-225AA
(TO-126)

Sample
Size

Duration
(Cycles)

Total
Device
Cycles

Catastrophic
Failures·

100
200
100

5,000
10,000
20,000

500,000
3,000,000
2,000,000

0
1
0

622

10,000

6,220,000

0

200
200
100

5,000
10,000
20,000

1,000,000
2,000,000
2,000,000

0
0
0

50

10,000

500,000

0

75

10,000

750,000

0

IlTJ = 95'C (30'C to 125'C)

221 A-04fTO-220

Depending on Maximum
TJ Rating

311-02/Press Fit/Stud
22-03fTO-206AA
(TO-18)
79-04fTO-205AD
(TO-39)

Force Air Cooling
"toff = Adjust per device type

*Failures are at maximum rated values. The severe nature of these tests is normally not seen under actual conditions.
··Typical 4 seconds OFF.

LlQUID-TO-LiQUID (GLASS STRAIN)

THERMAL SHOCK
CONDITIONS BEYOND THE NORM
Excesses in temperature not only cause variations in
electrical characteristics, they can raise havoc with the
mechanical system. Under temperature extremes, contraction and expansion of the chip and package can cause
physical dislocations of mechanical interfaces and induce
catastrophic failure.
To evaluate the integrity of Motorola thyristors under
the most adverse temperature conditions, they are subjected to two different thermal shock tests: liquid-toliquid and air-to-air.

This thermal shock test is performed for the same reasons as the temperature cycling test, however, the extreme changes in temperature are more sudden. This is
an especially useful tool for evaluating the metal to non- .
metal interface. Results of this test are shown in Table
S.V.

AIR-TO-AIR (TEMPERATURE CYCLING)
This thermal shock test is conducted to determine the
ability of the devices to withstand exposure to extreme
high and low temperature environments and to the shock
of alternate exposures to the temperature extremes. Results of this test are shown in Table S.VI.

Table B.V. Liquid-to-Liquid
Test Conditions

Case
29-04fTO-226AA (TO-92)

Mil Std 750, Method 1056-1

77-0SfTO-22SAA

O'C to

221A-04fTO-220 (TO-126)

Dwell Time -

22-03fTO-206AA (TO-18)

Immediate Transfer

+ 1OO'C
15 seconds

Number of
Cycles

Catastrophic
Failures·

950

300

0

200

300

0

300

300

...0

Sample
Size

75

300

0

79-04IT0-20SAD (TO-39)

75

100

0

311-02/Press Fit/Stud

75

100

0

267-03/Axial Lead (Surmetic SO)

75

300

0

*Failures are at maximum rated values. The severe nature of these tests is normally not seen under actual conditions.

MOTOROLA THYRISTOR DEVICE DATA
1-8-7

•

Table S.VI. Air-to-Air
Sample
Size

Number
of Cycles

Total
Device
Cycles

Catastrophic
Failures*

900

400

360,000

0

SOO

400

200,000

0

400

400

160,000

0

lS0

400

60,000

0

22-03fTO-206AA (TO-18)

300

400

120,000

0

79-04fTO-20SAD (TO-39)

7S

SO

3,750

0

100

400

40,000

0

Test Conditions

Case

-40°C or -6SoC
to + lS0°C

29-04ITO-226AA (TO-92)
77-0SfTO-22SAA (TO-126)

Dwell - lS minutes
at each extreme

221A-04fTO-220
311-02lPress Fit/Stud

•

Immediate Transfer

267-03/Axial Lead (Surmetic 50)

*Failures are at maximum rated values. The severe nature of these tests is normally not SBen under actual conditions.

ENVIRONMENTAL TESTING

component parts and constituent materials to the combined deteriorative effects of prolonged operation in a
high-temperature/high-humidity environment. H3TRB
test results are shown in Table B.VII.

MOISTURE TESTS
Humidity has been a traditional enemy of semiconductors, particularly plastic packaged devices. Most
moisture-related degradations result, directly or indirectly, from penetration of moisture vapor through
passivating materials, and from surface corrosion. At
Motorola, this erstwhile problem has been effectively
controlled through the use of a unique junction "glassivation" process and selection of package materials. The
resistance to moisture-related failures is indicated by the
tests described here.
BIASED HUMIDITY TEST
This test was devised to determine the resistance of

MOISTURE RESISTANCE TEST
This test evaluates the deteriorative effects of temperature cycling and high humidity under accelerated conditions simulating tropical environments. During this test,
devices are subjected to alternate periods of condensation and drying, which "breathe" moisture into nonhermetic packages and accelerate the development of
corrosion. Increased effectiveness is further obtained by
use of high temperatures which intensify the effects of
humidity. Test results are shown in Table B.VIII.

Table S.VII. Biased Humidity Test
High humidity, high Temperature, reverse bias (H3TRB)
Case

Test Conditions

Sample
Size

Duration
Hours

Total
Device
Hours

Catastrophic
Failures·

29-04fTO-226AA
(TO-82)

Relative Humidity 85%
TA = 8SoC

400

500-1000

300,000

0

77-0SfTO-22SAA

Reverse Voltage-Rated
or 200 V Maximum

200

SOO-1000

150,000

0

100

500-1000

7S,000

0

100

SOO-100

7S,000

0

30

1000

30,000

0

Sample
Size

Duration
Hours

Catastrophic
Failures*

Mil. Std. 7S0
Method 1021

100

960

0

Relative Humidity 92-98%

100

960

0

50

720

0

40

960

0

221A-04ITO-220
22-03fTO-206AA
267-03/Axial Lead (Surmetic SO)

*Failures are at maximum rated values. The severe nature of these tests is normally not seen under actual conditions.

Table S.VIIi. Moisture Resistance Test
Test Conditions

Case
29-04ITO-226AA
(TO-92)
77-0SfTO-22SAA
(TO-126)
221A-04ITO-220

Temperature CycleCycle Time 24 Hours

267-03/Axial Lead (Surmetic SO)

*Failures are at maximum rated values. The severe nature of these tests is normally not seen under actual conditions.

MOTOROLA THYRISTOR DEVICE DATA
1-8-8

MECHANICAL TESTING
VIBRATION TEST (VARIABLE FREQUENCY)
Vibration, by causing loosening of parts or relative motion between parts in the sample, can produce objectionable operating characteristics, noise, wear and physical distortion, and often results in fatigue and failure of
mechanical parts.
This test determines the effects of vibration within the
predominate frequency ranges and magnitudes that may
be encountered by thyristors during field service. Most
vibration encountered in field service is not of a simple
harmonic nature. Nevertheless, tests based on vibrations
of this type have proved satisfactory for determining critical frequencies, modes of vibration and other data necessary for planning protective steps against the effects
of undue vibration. Test results are shown in Table 8.JX.

CONSTANT ACCELERATION TEST
The Constant Acceleration test is used to determine the
effects of a centrifugal force on semiconductor devices.
This test is designed to indicate types of structural and
mechanical weaknesses not necessarily detected in shock
and vibration tests. The results of this test are shown in
Table B.XI.
Table S.XI

10,000 G's in Yl Y2
Axis

Table S.lX
Test Conditions
MiI·S·75D, Method 2OS6
20 G's in Xl Yl Zl
Axis

Case

Duration
(Minutesl

Sample
Size

Catastrophic
Failures'

n05

48

100

0

221A·04

48

150

0

29-04

48

340

0

22-03

48

75

0

79-04

48

-

-

25

0

48

84

0

311-02
267-03

Sample
Size

Catastrophic
Failures'

1

100

0

1

340

0

221A-04

1

150

0

22-03

1

75

0

267-03

1

84

0

Test conditions
MiI·S 750, Method 2006

Case

Duration
(Minutes)

77-05
29-04

*Failures are at maximum rated values. The severe nature of these
tests is normally not seen under actual conditions.

DROP SHOCK TEST
Drop shock testing simulates the stress encountered
by a device during rough handling, transportation or field
operation. Shocks of this type may disturb operating
characteristics or may cause catastrophic failures. Motorola plastic thyristors exhibited extremely good resistance to mechanical shock. Results are shown in Table
8.XII.

*Failures are at maximum rated values. The severe nature of these
tests is normally not seen under actual conditions.

SOLVENTS TEST
Almost invariably, in actual practice, plastic thyristors
are subjected to a cleaning solution to remove residue
flux or solvents utilized during circuit manufacturing. Frequently, the cleaning solution is highly chlorinated and
the devices are completely immersed in an elevated temperature bath. Motorola plastic thyristors subjected to hot
chlorinated baths have proved highly resistant to the potentially damaging effects of this chemical.
Alcohols, water baths, freon, etc., produce no known
latent failure mechanisms. Tests have indicated that Motorola plastic packages will withstand all cleaning agents
commonly used. Solvents' test results are shown in Table
Table S.X.

Chlorothene Immersion
alTA = 50°C

Case

Test Conditions
Mil-STD·2D2, Method 202
XI, VI Axis
15 G's, 10 Blows

Case

Sample Catastrophic
Size
Failures*

77-05

100

1

221A-04

150

0
0

29-04

340

311·02

25

0

22-03

75

0

267-03

84

0

*Failures are at maximum rated values. The severe nature of these
tests is normally not seen under actual conditions.

B.X.

Test Conditions

Table S.XII

Number of Sample
Minutes
Size

Catastrophic
Failures'

221A-04

30

100

0

n05

30

50

0

29-04

30

50

0

267-03

30

50

0

*Failures are at maximum rated values. The severe nature of these

tests is normally not seen under actual conditions.

MOTOROLA THYRISTOR DEVICE DATA
1-8-9

•

•

MOTOROLA THYRISTOR DEVICE DATA
1-8-10

CHAPTER 9
USING THYRISTOR DIE FOR HYBRID ASSEMBLY

Substantial savings in weight and volume can be
achieved by hybrid packaging techniques. Most Motorola
thyristor packaged devices are in die form for custom
hybrid assembly. The same advanced thyristor processing techniques available in packaged form is available in
die form.

DIE CHARACTERISTICS
Currently 12 die sizes are available. Seven in the low
current range « 8 amps) and 5 in the medium current
range (> 8 amps). Table 9.1 lists all low current devices
and their die sizes while Table 9.11 lists all medium current
devices (for die layout and bond pad dimensions consult
the factory).
Table 9.1. Low Current « 8 Amps)
Die Metallization: AI (front), Au (back)
Part Number

*Die Size IMil2)

2C5060 thru 5064
MCRC1004 thru -8
MCRC22-2 thru -8
2C1595 thru 2C1599
MCR106-2 thru -8
CC106F thru M
MAC974 thru -8
2C6071 thru 6075
2C4870 th ru 2C4871
2C2646 thru 2C2647
2C6027 thru 2C6028
1C5758 thru 5761 A
MBSC4991 thru 4992
2C6116 thru 6118

32
42
48
70
70
48
42
84
15 x 20
15 x 20
20
20
20
20

Die metallization: Solderable TiNiAg (Front and Back)
Part Number

*Die Size (Mil2)

MCRC218-2 thru -10
CC122Fl thru N1
MCRC72-2 thru -8
MCRC67-2 thru -6
2C6394 th ru 6399
MCRC68-2 thru -6
2C6400 th ru 6405
MCR69-2 thru -6
2C682 thru 692
CC230F thru 230M
MCRC70-2 thru 70-6
MCRC264-2 thru -10
CC228A thru CC228M
MCRC265-2 thru -10
TC2500B thru N
MACC218A4 thru Al0
2C6342 thru 6349
MACC228A4 thru Al0
2C6342A thru 6349A
MACC15A4 thru Al0
MACC223A4 thru Al0
TC6421B thru N
MACC224A4 thru Al0

92
92
92
92
92
92
150
150
150
150
150
180
150
210
120
120
120
120
150
150
180
210
210

"All Thyristor Die are square unless indicated.

ELECTRICAL CHARACTERISTICS
All die are individually probed at room temperature.
However due to limitations when probing in wafer form
some of the specifications of the equivalent packaged
device cannot be tested and guaranteed in wafer form.
These parameters include ROJC, VTM at high current, and
switching times. The above parameters depend upon the

*AII Thyristor Die are square unless indicated.

,'~

Table 9.11. Medium Current (> 8 Amps)

1l"

.;~.

MOTOROLA THYRISTOR DEVICE DATA
1-9-1

•

assembly techniques of the individual user. Each die is
100% tested by state-of-the-art computer test equipment
and visually inspected per MIL-STD 19500 and MIL-STD
750 prior to shipment. Electrical specifications for most
devices listed in Tables 9.1 and 9.11 can be found by consulting the corresponding data sheet for the packaged
part.

wire having an elongation of 10%. Caution should be
exercised during wire bonding that the bond footprint
remains within the bonding pad area. Wire bond settings
should be optimized and a wire pull test performed (see
Method 2037, MIL-STD 750B) to monitor wire bond
strength uniformity. Destructive sample testing and 100%
non-destructive testing is recommended. Electrical connection for medium current thyristors can be accomplished through the solder clip method as the pad metallization is a solderable TiNiAg. Assembly techniques
such as a profiled belt furnace (hydrogen atmosphere) is
recommended for attachment of the clips. Clips are recommended in order to withstand the high surge currents.
*Wire sizes of 15 mils and greater are pure AI.

Example: MCRC218-2 thru 10See MCR218 Data Sheet
2C5060
See 2N5060 Data Sheet
CC228A thru M
See C228 Data Sheet

VISUAL INSPECTION OF THYRISTOR DIE
All Motorola thyristor die meet the visual inspection
criteria of MIL-Standard 750B, Method 2073, with the exception of specific criteria listed below. All thyristor dice
are visually screened to a 1% AQL level.

ENCAPSULATION
Before encapsulation, the assembly must be kept in a
moisture-free environment. For a non-hermetic package,
a high grade electronic coating such as Dow Corning
RTV3140 should be applied (coating is optional with hermetic package). Before encapsulation, a 150°C two-hour
bake should be performed to remove any surface moisture, and any capping of hermetic packages must be performed in a dry nitrogen atmosphere.

DIE BACKING
All standard thyristor die come with the following metallization: low current « 8 amps) - aluminum front
metal and gold back metal, and medium current (> 8
amps) solderable titanium nickel silver on both front and
back metal. This metallization is suitable for solder preform mounting. Commonly used header materials such
as copper, nickel plated copper, gold plated mqlybdenum, beryllia, and alumina are acceptable. The substrate
must be free of all oxides prior to assembly. Mounting
is generally accomplished in a profiled belt furnace (hydrogen atmosphere is recommended).

HANDLING AND SHIPPING
Thyristor die are packaged several ways.

MULTI-PAK
This is a 2" x 2" or a 4" x 4" waffle type carrier with a
separate carrier for each die, holding 100 to 400 die
depending upon die size. The multi-pak is shown in
Figure 9.1.

WIRE BONDING AND CLIP ATTACHMENT
Electrical connection for low current thyristors can be
accomplished by ultrasonic wire bonding, using AIMg*

T
1--"
2
NOM

Figure 9.1. Multi-Pak

.j_.n:!III.:_m~"il~H+ir1t~.~AIiliiH:~I:.IM'.fii1ft'JlJ__fj
MOTOROLA THYRISTOR DEVICE DATA
1-9-2

I

CIRCLE PAK

WAFER PAK

The wafer is placed on a sticky film before being sawed
and broken. Each wafer is completely sawed through with
one side backed against the PVC film. The die adhere to
the PVC film and maintain their exact orientation and
spacing. This packaging method also offers the convenience and storage with original orientation and spacing
even after a portion of the wafer is used. The evacuated
plastic bag is thermally sealed, holds the contents securely, and allows no die movement. Die can be removed
from the sticky film by a sharp ejector pin pushing a die
up and a vacuum needle manually picking it up. The
circle-pak can also be handled by an automatic die loader
with minor adjustment. The circle pak is shown in Figure
9.2.

The die are 100% electrically tested (rejects are inked)
but the wafer is left unsawed. No visual inspection is
performed.

VACUUM PAK
The die are 100% electrically tested (rejects are inked).
A wafer or a Quarter wafer is scribed and broken with the
wafer left on the mylar. This is then sealed in a vacuum
bag. No visual inspection is performed.
Upon opening the packaging medium, dice should be
stored in a nitrogen atmosphere to prevent oxidation of
bond areas prior to assembly. All dice should be handled
with teflon tipped probes to prevent any mechanical
damage.

•

Circle pak packaging method is patented by Motorola Inc.

PROTECTIVE
CARDBOARD

PVC FILM WITH CARDBOARD RING
(STICKY SIDE IS AGAINST THE
GOLD·BACKED SIDE OF WAFER)

Figure 9.2. Circle Pak (CP Suffix)

d~""":iitPf,~"'il'if'k. ,,t"'r:,.,N';,/",;.''i''J}L?:J;),l~;~''''~.:m'
.
~V!fMf<;::y;.,,*, . ,!tif';J'~8'. . 'P< ~~ .. 7IY~, \!;. ~R;: .. {3", . ~~~1
...
.
.

MOTOROLA THYRISTOR DEVICE DATA
1-9-3

.

•

MOTOROLA THYRISTOR DEVICE DATA
1-9-4

APPENDICES
APPENDIX I
USING THE TWO TRANSISTOR ANALYSIS
Equation (3) relates IA to IG, and note that as a1 + a2
= 1, IA goes to infinity. IA can be put in terms of IK and
a's as follows:

DEFINITIONS:
IC == Collector current
IB == Base current
ICS == Collector leakage current
(saturation component)
IA == Anode current
IK == Cathode current
a == Current amplification factor
IG == Gate current
The subscript "i" indicates the
appropriate transistor.

IB1 = IC2
Combining equations (1) and (2):
ICS1 + ICS2
IA = -=-=-....:;:.=-=--1 - a1 - (.!K) a2
IA
IA - 00 if denominator approaches zero, i.e., if
IK

1 - a1

'A

a2
Note that just prior to turn-on there is a majority carrier
build-up in the P2 "base." If the gate bias is small there
will actually be hole current flowing out from P2 into the
gate circuit so that IG is negative, 'K = IA + IG is less
than IA so: (see Figure 3.2 for the directions of current
components)

FOR TRANSISTOR #1:
IC1 = a1 IA + ICSI
and

IK
iA
< 1 which corresponds to a1

IB1 = IA - IC1
Combining these equations,
IB1 = (1 - (1) IA - ICS1

+

a2 > 1

A
, IA

(1 )

-

PI
DEVICE #1

lSI

Nl

P2

LIKEWISE, FOR TRANSISTOR #2
IC2 = a21K + ICS2

.ICI

G

(2)

IG

IB1 = IC2
and by combining Equations (1) and
(2) and substituting IK = 'A + 'G, it
is found that

DEVICE #2
IS2

K

Schematic Diagram of the Two Transistor Model
of a Thyristor

(3)

MOTOROLA THYRISTOR DEVICE DATA
1-10-1

•

APPENDIX II
CHARGE AND PULSE WIDTH

•

In the region of large pulse widths using current triggering, where transit time effects are not a factor, we can
consider the input gate charge for triggering, 0in, as consisting of three components:
1) Triggering charge Otr, assumed to be constant.
2) Charge lost in recombination, Or, during current regeneration prior to turn-on.
3) Charge drained, Odr, which is by-passed through
the built-in gate cathode shunt resistance (the presence of this shunting resistance is required to increase the dvldt capability of the device).
Mathematically, we have
Oin

= Otr

+ 0dr + Or

= IG1'

(1)

Or is assumed to be proportional to 0in; to be exact,
Or = Oin (1 - exp -1'/1'1)

(2)

where IG = gate current,
l' = pulse width of gate current,
1'1 = effective life time of minority carriers in
the bases
The voltage across the gate to cathode P-N junction during forward bias is given by VGK (usually 0.6 V for silicon). * The gate shunt resistance is Rs (for the MCR729,
typically 100 ohms), so the drained charge can be expressed by
VGC
Odr = As

Assume life time at the temperature range of operation
increases as some power of temperature
1'1 = KTm
(5)
where K and m are positive real numbers. Combining
Equations (4) and (5), we can get the slope of Oin with
respect to temperature to be
slope =

dOin

dT

VGC

= - m(Otr + As1')

l'

expo Tl1'1

:;::j - - T -

(6)

In reality, Otr is not independent of temperature, in which
case the Equation (6) must be modified by adding an
additional term to become:
VGC l' exp.1'!T1 dOtr
slope = -m(Otr+--1')----+-- exp1'/1'1 (7)
Rs 1'1
T
dT
Physically, not only does Otr decrease with temperature so that dOtr/dT is a negative number, but also
IdOtr/dTI decreases with temperature as does Ida/dTI in
the temperature range of interest.
Equation (6) [or (7)) indicates two things:
1) The rate of change of input trigger charge decreases
as temperature (life time) increases.
2) The larger the pulse width of gate trigger current,
the faster the rate of change of Oin with respect to
change in temperature. Figure 3.11 shows these
trends.

(3)

l'

Combining equations (1), (2), and (3), we get
0in

= IG1' = (Otr

VGC
+ As 1') expo 1'/1'1

(4)

Note that at region A and C of Figure 3.4(b) 0in has an
increasing trend with pulse width as qualitatively described by Equation (4).

II

*VGC is not independent of IG. For example, for the
MCR729 the saturation VGC is typically 1 V, but at lower
IG's the VGC is also smaller, e.g. for IG = 5 mA, VGC is
typically 0.3 V.

. .lIJItIn4~.I~il.UtlUFlf.Nt'tJ!!.;."giAJt~lt~~
MOTOROLA THYRISTOR DEVICE DATA
1-10-2

APPENDIX III
TTL SOA TEST CIRCUIT

Using the illustrated test circuit, the two TTL packages
(quad, 2-input NAND gates) to be tested were powered
by the simple, series regulator that is periodically shorted
by the clamp transistor, Q2, at 10% duty cycle rate. By
varying the input to the regulator Vl and the clamp pulse
width, various power levels can be supplied to the TTL
load. Thus, as an example, Vee could be at 5 V for 90

ms and 10 V for 10 ms, simulating a transient on the bus
or a possibly shorted power supply pass transistor for
that duration. These energy levels are progressively increased until the gate (or gates) fail, as detected by the
status of the output LEOs, the voltage and current waveforms and the device case temperature.

Vee
MJE220
Vl
220
2W

5.6V
lW

Vl

300

1k

Vee

01

;I
220

1k
100 /LF

lN4739

-=

O.l/LF

-=
MCl4011

SOUARE WAVE GENERATOR
f = 1 Hz

V2
2N3904

03

220

-=

(21 MC7400
OUT

V2

10 k
Tll-1

I------f-- T2

.JLIl

10 k

-=

10 k

5msjAq,·

~.

MOTOROLA THYRISTOR DEVICE DATA
1-10-5

. '.

t2

•

APPENDIX VII
THERMAL .RESISTANCE CONCEPTS
The basic equation for heat transfer under steady-state
conditions is generally written as:
q =

a

where

hA~T

(1)

using Kirchoff's Law and the following equation results:
TJ = PO(RruC
where

q = rate of heat transfer or power dissipation
(PO),
h ,= heat transfer coefficient,
A = area involved in heat transfer,
~T = temperature difference between regions
of heat transfer.

However, electrical engineers generally find it easier to
work in terms of thermal resistance, defined as the ratio
of temperature to power. From Equation (1), thermal resistance, Re, is
Re =

~T/q

(2)

= 1/hA

The coefficient (h) depends upon the heat transfer mechanism used and various factors involved in that particular
mechanism.
An analogy between Equation (2) and Ohm's Law is
often made to form models of heat flow. Note that ~T
could be thought of as a voltage; thermal resistance corresponds to electrical resistance (R); and, power (q) is
analogous to current (I). This gives rise to a basic thermal
resistance model for a semiconductor (indicated by
Figure A3).
The equivalent electrical circuit may be analyzed by

+ Recs + ReSA) + TA

The thermal resistance junction to ambient is the sum
of the individual components. Each component must be
minimized if the lowest junction temperature is to result.
The value for the interface thermal resistance, Recs, is
affected by the mounting procedure and may be significant compared to the other thermal-resistance terms.
The thermal resistance of the heat sink is not constant;
it decreases as ambient temperature increases and is affected by orientation of the sink. The thermal resistance
of the semiconductor is also variable; it is a function of
biasing and temperature. In some applications such as
in RF power amplifiers and short-pulse applications, the
concept may be invalid because of localized heating in
the semiconductor chip.

TJ, JUNCTION TEMPERATURE - - .----:--.

MICA INSULATORS DIE"
\..
HEAT SINK"

A,

Rruc

Po

TC. CASE TEMPERATURE--

~

(3)

TJ = junction temperature,
Po = power dissipation,
RruC = semiconductor thermal resistance
(junction to case),
Recs = interface thermal resistance
(case to heat sink),
ReSA = heat sink thermal resistance
(heat sink to ambient),
TA = ambient temperature.

v/llN?I8l11/'

W$M/;i;0Z0I
FLAT WASHER - - jI?tI? IV? ?I ?II '
SOLDER TERMINAL / " "

CCJJ

NUT/'"

TS. HEAT SINK
TEMPERATURE - TA,AMBIENT __
TEMPERATURE

R8CS
R8SA

REFERENCE TEMPERATURE

Basic Thermal Resistance Model Showing Thermal to Electrical Analogy for a Semiconductor

MOTOROLA THYRISTOR DEVICE DATA
1-10-6

APPENDIX VIII
SOURCES OF ACCESSORIES
Insulators
Manufacturer
Aavid Eng.
AHAM
Astrodyne
Delbert Blinn
IERC
Staver
Thermalloy
Tor
Tran·tec
Wakefield Eng.
Wei Corp.

Joint Compound

BeO Ai02 Anodize

Mica

Heat Sinks
Plastic
Film

Silicone
Rubber

Stud

Flange Disc

Thermowatt

UnWDuo Watt

RF Stripline

Ther·o·link 1000

-

-

-

-

-

-

X

X

-

X

-

-

-

-

-

-

-

-

-

X

X

-

X

-

#829

-

-

-

-

X

X

X

X

X

X

-

-

-

X

X

X

X

X

X

-

-

-

-

Thermate

-

-

-

-

-

X

X

-

X

X

X

-

-

-

-

-

-

-

X

X

-

X

X

X

Thermacote

X

X

X

-

X

-

X

X

X

X

X

X

-

TJC

X

-

X

X

X

-

X

X

-

X

-

XL500

X

-

-

-

X

X

X

X

X

X

X

X

Type 120

X

-

X

-

-

-

X

X

X

X

X

-

-

-

-

-

-

-

-

X

X

-

-

-

-

Other sources for Joint Compounds: Dow Corning, Type 340
Emerson & Cuming, Eccoshield - SO (Electrically Conducting)
Emerson & Cuming, Eccotherm - TC·4 (Electrically Insulating)

SUPPLlERS'ADDRESSES
Aavid Engineering, Inc., 30 Cook Court, Laconia, New
(603) 524-4443
Hampshire 03246
AHAM Heat Sinks, 27901 Front Street, Rancho, California
92390
(714) 676-4151

International Electronics Research Corporation, 135 West
Magnolia Boulevard, Burbank, California 91502
(213) 849-2481

Astrodyne, Inc., 353 Middlesex Avenue, Wilmington,
(617) 272-3850
Massachusetts 01887

The Staver Company, Inc., 41-51 North Saxon Avenue,
Bay Shore, Long Island, New York 11706
(516) 666-8000

Delbert Blinn Company, P.O. Box 2007, Pomona, California 91766
(714) 623-1257

Thermalloy, Inc., P.O. Box 34829, 2021 West Valley View
Lane, Dallas, Texas 75234
(214) 243-4321

Dow Corning, Savage Road Building, Midland, Michigan
48640
(517) 636-8000

Tor Corporation, 14715 Arminta Street, Van Nuys, California 91402
(213) 786-6524

Eaton Corporation, Engineered Fasteners Division, Tinnerman Plant, P.O. Box 6688, Cleveland, Ohio 44101
(216) 523-5327
Emerson & Cuming, Inc., Dielectric Materials Division,
869 Washington Street, Canton, Massachusetts 02021
(617) 828-3300

Tran-tec Corporation, P.O. Box 1044, Columbus, Nebraska 68601
(402) 564-2748
Wakefield Engineering, Inc., Wakefield, Massachusetts
01880
(617) 245-5900
Wei Corporation, 1405 South Village Way, Santa Ana,
(614) 834-9333
California 92705

MOTOROLA THYRISTOR DEVICE DATA
1-10-7

•

APPENDIX IX
DERIVATION OF RFI DESIGN EQUATIONS
where:
N is total turns
Erms is line voltage

The relationship of flux to voltage and time is E =

N~~ or E =

NAc ~~ since cf> = BAc and Ac is a constant.

Rearranging this equation and integrating we get:

JE dt

•

tr is allowable current rise time in seconds

= NAc (B2 - Bl) = NAc a B

BMAX is maximum usable flux density of core material

(1)

At is usable core area

in square inches
Window area necessary is:

which says that the volt-second integral required determines the size of the core. In an L-R circuit such as we
have with a thyristor control circuit, the volt-second characteristic is the area under an exponential decay. A conservative estimate of the area under the curve may be
obtained by considering a triangle whose height is the
peak line voltage and the base is the allowable switching

(4)
Aw = N Awirex3
The factor of 3 is an approximation which allows for insulation and winding space not occupied by wire. Substituting equation (3) in (4):

Aw = 10.93 Erms trxl06 A . x3
BMAXAc
wire

time. The area is then 1/2 bh or E~tr. Substituting in Equa-

(The factor 10.93 may be rounded to 11 since two significant digits are all that are necessary.)

tion (1):

The factor AcAw can easily be found for most cores and
is an easy method for selecting a core.

(2)

where:
Ep is the peak line voltage
tr is the allowable current rise time

A A _ 33 Erms trAwirex106
c w BMAX
In this equation, the core area is in in 2. To work with
circular mils, multiply by 0.78 x 10- 6 so that:

N is the number of turns on the coil
At is the usable core area in cm 2

. A A _ 26 Erms trAwire
c w BMAX

a B is the maximum usable flux density of the core
material in W/m2

where Awire is the wire area in circular mils.
Inductance of an iron core inductor is
L = 3.19 N2 Ac 10- 8

Rewriting Equation (2) to change aB from W/m2 to gauss,
substituting v'2 Erms for Ep and solving for N, we get:
N = ~ tr x 108 = 0.707 Erms trx108
2 Ac a B
BMAX Ac
At in this equation is in cm 2. To change to in 2, multiply
Ac by 6.452. Then:

Ig

+ !!;
JL

Rearranging terms,
Ig = 3.19 N2 Ac 10- 8 _ lc
L

N = 10.93 Erms trx106
BMAxxAc

JL

(3)

APPENDIX X
BIBLIOGRAPHY ON RFI
Electronic Transformers and Circuits, Reuben Lee, John Wiley and Sons, Inc., New York, 1955.
Electrical Interference, Rocco F. Ficchi, Hayden Book Company, Inc., New York, 1964.
"Electromagnetic-Interference Control," Norbert J. Sladek, Electro Technology, November, 1966, p. 85.
"Transmitter-Receiver Pairs in EMI Analysis," J. H. Vogel man, Electro Technology, November, 1964, p. 54.
"Radio Frequency Interference," Onan Division of Studebaker Corporation, Minneapolis, Minnesota.
"Interference Control Techniques," Sprague Electric Company, North Adams, Massachusetts, Technical Paper 62-1,
1962.
"Applying Ferrite Cores to the Design of Power Magnetics," Ferroxcube Corporation of America, Saugerties, New York,
1966.
., .:' <>

; ~ ,

;

A'

".,'

•

'i':

••

~

'.' •
.:::.~)'

MOTOROLA THYRISTOR DEVICE DATA
1-10-8

Motorola's broad line of Thyristors include ....
• A full line of TRIACs and SCRs covering a forward
current range from 0.5 to 55 amperes and blocking voltages from 15 to 800 volts.
• Two basic package categories - plastic for lowest cost - including fully insulated plastic Case
221 C-02 (TO-220 Full Pak); metal for hemeticallysealed requirements in high-reliability projects.
• An extensive line of trigger devices that includes
UJTs, PUTs, SBS - even optically-coupled
TRIAC drivers from Motorola's optoelectronic
product line.
Then there are the special applications devices for Radar Modulation and Crowbar applications;
even specially packaged devices with quickdisconnect terminals for appliances and SOT
packages for surface mounting in space-saving
requirements.
Finally, there is the continued Motorola investment
in discrete-product R&D, producing new capabilities
such as "gate-turnoff" (GTO) devices whichfacilitates the use of thyristors in dc power-switching
applications.

Selector Guide •

Contents

Page

Numeric Index .......................
GTOs (Gate Turn-Off) ..................
Isolated TRIAC Mold Type ..............
SCRs
General Purpose ....................
Radar Modulator ....................
TRIACs
General Purpose. . . . . . . . . . . . . . . . . . . .
Optically Isolated ....................
Triggers
UJT - Unijunction Trnasistors ..........
SIDACs ..........................
PUT - Programmable Unijunctions . . . . . . .
SBS - Silicon Bidirectional Switch ......

2-1

2-3
2-4
2-4
2-4
2-15
2-16
2-27
2-28
2-28
2-28
2-28

Characteristic
Curves

SCR

If -Reverse
, VT
Blocking
Region
IH_
VRRM I IORM-

VH

IRRM

"'-Reverse

•

1(-)

Avalanche
Region

t.:

,.{
K

iIi

VH
V(+)

I

VORM Fo~ard
Forward
Breakover
Blocking
Point
Region

Vv

~,

E~
B1

I:

TRIAC
Forward
Breakover
Vo~age!

+VT

Current

[A- -

V(+)

VORM .-

SBS

1(+)
Vs

MT2
V(-)
IS

I

/IH

IS

===~~=;:::::2;::=V(+)
1/

,

Vs

I

IV

IE

1(-)

Peak Point
Negative
Resistance
Region I
Valley Point

1(+)

MT1

A

PUT

~

+IH
IORM

,

r-'~"

-t----

Ip

Vp
Vs

,

+IT --

Quadrant I
MT2 +

MTl

B2
Negative
VEB1
Cutoff :Resim,ance I Saturation
Region I Region : Region
Vp --Peak:
Point:
VB2B; = K
: Valley Point
I
I
VEB1(sat) ___ _ I_____ ..J'

MT2
,/VORM

I (+ )

Reverse
-VT:
Breakover
Voltage!
- IT
Current
Quadrant III
1(-)
MT2 -

~

UJT

I

MTl

A

1(+)

t'

ITM

*

VTM

SIDAC

IH

MT2

I(BO)
V(+)

VH

VF
Vv

VORM

··········1
1(-)

MOTOROLA THYRISTOR DEVICE DATA
2-2

V(BO)

Numeric Index
Device
2N Devices
2N682-692
2N1595-99
2N1843-49A
2N2323-29
2N2646-47
2N3870-73
2N3896-99
2N3980
2N4199-4204
2N4213-19
2N4851-53
2N4870-71
2N4948-49
2N5060-64
2N5164-71
2N5431
2N5441-43
2N5444-46
2N6027-28
2N6071-75B
2N6116-18
2N6157-59
2N6160-65
2N6167-70
2N6171-74
2N6237-41
2N6342-49
2N6342A-49A
2N6394-405
2N6400-04
2N6504-09

Page

2-10
2-5
2-18
2-16
2-28
2-12
2-12
2-28
2-15
2-6
2-28
2-28
2-28
2-5
2-9
2-28
2-25
2-26
2-28
2-17
2-28
2-25
2-24
2-9
2-13
2-6
2-19
2-21
2-8
2-9
2-10

Device

Page

"C" Devices (SCRs)
C35 Series
2-13
2-6
C106 Series
2-7
C122 Series
C205 Series
2-5
C228, (3) Series
2-13
C229 Series
2-12
2-11
C230 Series
C230, (3) Series
2-11
C231, (3) Series
2-11
C232 Series
2-11
C233 Series
2-12

Page

Device

MAC3030 Series
MAC3040 Series
MAC3060 Series

2-27
2-27
2-27

"S" Devices (SCRs)
S2800 Series
2-7
S6200 Series
2-9
S6210 Series
2-9
S6220 Series
2-9

MBS Devices
(Bilateral Switches)
2-28
MBS4991-92
MCR Devices (SCRs)
MCR22 Series
2-5
MCR63 Series
2-14
MCR64 Series
2-14
MCR65 Series
2-14
MCR67 Series
2-8
MCR68 Series
2-8
MCR69 Series
2-10
MCR70 Series
2-12
MCR71 Series
2-14
MCR72 Series
2-7
MCR100 Series
2-5
MCR102-3
2-5
MCR106 Series
2-6
MCR202-6
2-5
MCR218 Series
2-7
MCR218FP Series
2-10
MCR225-12
MCR225FP Series
2-10
MCR264 Series
2-13
MCR265 Series
2-14
MCR310 Series
2-8
MCR506 Series
2-7
MCR729 Series
2-15
MCR1718 Series
2-15
MCR1906 Series
2-6
MCR3818 Series
2-9
MCR3835 Series
2-12
MCR3918 Series
2-10
MCR3935 Series
2-12

MAC Devices (TRIACs)
MAC15A Series
2-21
MAC15AFP Series
2-22
MAC25A Series
2-22
MAC50A Series
2-26
MAC97,A,B Series
2-16
MAC210A Series
2-20
MAC210AFP Series
2-20
MAC212A Series
2-21
MAC212AFP Series
2-20
MAC218A Series
2-18
MAC218AFP Series
2-19
MAC223A Series
2-23
MAC223AFP Series
2-23
MAC224A Series
2-26
MAC228A Series
2-19
MAC229A Series
2-19
MAC310A Series
2-20
MAC320A Series
2-22
MAC320AFP Series
2-22
MAC625 Series
2-24
MAC635 Series
2-25
MAC3010 Series
2-27
MAC3020 Series
2-27

MPU Devices (PUTs)
MMBPU131
2-28
MMBP6027,28
2-28
MU Devices (UJT)
MU10,20
2-28
MU4891-94
2-28

MOTOROLA THYRISTOR DEVICE DATA
2-3

Page

Device

"SC" Devices (TRIACs)
SC141 Series
2-18
SC143 Series
2-18
SC146 Series
2-20
SC149 Series
2-21
SC260, (3) Series
2-23
SC261 Series
2-23
"T" Devices (TRIACs)
T2322 Series
2-16
T2323 Series
2-16
T2500 Series
2-17
T2500FP
2-18
T2800 Series
2-19
T2801 Series
2-17
T2802 Series
2-19
T6400 Series
2-25
T6401 Series
2-25
T6410 Series
2-26
T6411 Series
2-24
T6420 Series
2-26
T6421 Series
2-24
"MK" Devices (SIDACs)
MK1V Series
2-28
MKP9V Series
2-28

2

GTOs
Gate Turn-Off
Thyristors

SCRs

~I
G

Silicon
Cor.trolled
Rectifiers

Case 221A-04

GTOs are thyristors that can be turned off as well as
on by a gate signal. They are rugged, efficient high voltage switches that are particularly well suited for pulse
width modulation circuits and in applications such as
motor drives, switching power supplies, inverters and
other functions requiring high surge-current capabilities
and fast switching speeds.

Specification
Max

•

Device Number
MGT01000

I

MGT01200

1000

I

1200

VDRXM (V)

1(+1
On-State
Reverse
Blocking
Region

IT -

0.8 A
. VT

IHJli
IORM
V (- 1 --;.V~RI:RM~=
--- IRRM

ITSM (A)

200

""-Reverse

IGTM (mA)

300

Avalanche
Region

TC = 6T'C
' V(+I
I VORM Forward
Forward
Breakover
Blocking
Point
Region

11-1

,~

VGTM (V)

1.5

IH (rnA)

400

Sensitive Gate

15

Case 318-02
SOT-23

VGRM (V)

ATTENTION:
PACKAGE INNOVATION

Isolated TRIAC
Mold Type

:'. .
fI\
""

VDRM

25V

MMBS5060

50 V

MMBS5061

100 V

MMBS5062

200 V
VRRM

400 V
500 V
600 V

Features a TO-3 isolated mounting with a high isolation
voltage of 2.5 kVrms min. This package also offers quick
disconnect lead attachments, is plastic encapsulated to
provide economical cost and is UL recognized. See pages
2-26 and 2-27 for the MAC625 and MAC635 series.

ITSM (Amps)
60 Hz
III

~

~5!1i

IGT(mA)

0.2

:::iEiil<

VGT(V)

0.8

T J Operating
Range (OC)

-25 to
+150

:!:ii:
ffi
-1-1:;
~&liili
:I:

u

MOTOROLA THYRISTOR DEVICE DATA
2-4

Thyristors -

SCR's

Metal/Plastic Packages
0.5 to 55 Amperes RMS
25-1000 Volts

On-State IRMS) Current
O.SAMP
TC

= 6S"C

0.8 AMP
TC

1.2 AMPS

= S8'C

TC

= 2S'C

1.S AMPS
TC

= SO'C

K'

I'

= 80"C

!J

G A

Sensitive Gate
ease 22·03
TO·206AA (TO·18)
Style 6

1.6 AMPS
TC

Case 29-04
TO·226AA (TO·92)
Style 10

NOTE:
Industry Standards, with a variety
of Custom Specifications and
Leadforms available on Case
29-04 product .

Case 79·04
TO·205AD (TO·39)
Style 3

MCR202

MCR102
2N5060
BRX44/BRY55-30'

C205Y

MCR203

MCR103
2N5061
BRX45/BRY55-60'

C205YV

MCR22-2

2N1595

SOV

MCR204

MCR100-3
2N5062
BRX46/BRY55-100'

C205A

MCR22-3

2N1596

100 V

MCR206

MCR100-4
2N5064
BRX47/BRY55-200'

C205B

MCR22-4

2N1597

200 V

MCR100-6
BRX49/BRY55-400'

C205D

MCR22-6

2N1599

400 V

2SV

VRRM

SOOV

BRY55-500'
MCR100-8
BRY55-600'
6

VORM

MCR22-8

150(1)

10

600 V

15

ITSM (Amps)
60 Hz
III
~

10

0.2

IGTlmA)

~5!a

::Eii:ffi

xl3l3

0.8

3

VGTIV)

, ..~":hf'. = .:~ .. "'d':i'>~'S," ~..:!'J)£''.00.'b,. ~~~~~ ;t<5."t>~~~ >","'W?c'''''Y..#h~,j.'j, ~7v'''''

MOTOROLA THYRISTOR DEVICE DATA
2-8

On-State (RMS) Current
16 AMPS
TC

20 AMPS

= 90·C

~/A

TC

if

·G

A

G

= 65·C

(J: d

i!~

Isolated

ease 221A-04
TO-220AB
Style 3

Case 310-02
Style 1

ease 263-04
Style 1

2N6400

2N5164

2N5168

Case 311-02
Style 1

G

A

MCR3818-2

50V

MCR3818-3

100 V

2N6401

S6200A

S6210A

2N6167
S6220A

2N6402

2N5165
S62008

2N5169
S62108

2N6168
S62208

MCR3818-4

200 V

2N6403

2N5166
S6200D

2N5170
S6210D

2N6169
S6220D

MCR3818-6

400 V

2N6404

2N5167
S6200M

2N5171
S6210M

2N6170
S6220M

MCR3818-8

600 V

MCR3818-10

BOO V

2N6405

160

•

Case 174-04
TO-203AA
Style 1

VDRM

VRRM

ITSM (Amps)

240

60Hz
II)

40

30

IGT(mA)

:::Ii"'"

Sl
I-

;)5~

:::Iiii:ffi
1.5

VGT(V)

-til~w~

::::tid cc

:a:::

CJ

-40 to
+125

-40 to
+100

TJ Operating
Range (OC)

MOTOROLA THYRISTOR DEVICE DATA
2-9

SCR's (continued)

On-State (RMS) Current
20 AMPS
TC

=

25 AMPS
TC

67°C

A

VRRM

50V

MCR3918-2

2N6504

MCRS9-2

100 V

MCR3918-3

2NS505

MCRS9-3

200 V

MCR3918-4

2NS50S

400 V

MCR3918-S

2NS507

&DO V

MCR3918-8

800 V
ITSM (Amps)
60 Hz

=

650C

~~

~

A

Case 221A-04
TO-220AB
Style 3

Style 1

TC

K'

G

Case 175-03

VORM

850C

~I

iJG

•

=

case 221C-02
Style 3

Case 263-04
Style 1

MCR225-2FP

2NS82
2NS83

MCR225-4FP

2NS85

MCR225-SFP

2NS88

2NS508

MCR225-8FP

2N690

MCR3918-10

2NS509

MCR225-10FP

2NS92

240

300

300

150

MCRS9-S

750(1)

II)

u

::E-'I=
::JCS!ll
::E-a:

-~~
~w~

::EiiI<

40

IGT(mA)

30

VGT(V)

40

1.5

2

:r
u

T J Operating
Range (OC)

-40 to

-40 to
+125

+100

(1) Peak capacitor discharge current for tw = 1 ,.s. tw is defined as five time constants of an exponentially decaying current pulse
(crowbar applications).

MOTOROLA THYRISTOR DEVICE DATA
2-10

-S5 to
+125

On-State (RMS) Current
2SAMPS
TC

= 60·C

TC

= 6S"C

TC

= 7O"C

~G

JI' il

if

G

A

A

Isolated

Case 175-03
Style 1

ease 174-04
TO-203AA
Style 1

Case 235-03
Style 1

C230F

C231F

C230F3

C231F3

C232F

SOV

C230A

C231A

C230A3

C231A3

C232A

100 V

C230B

C231B

C230B3

C231B3

C232B

200 V

C230D

C231D

C230D3

C231D3

C232D

400 V

C230M

C231M

C230M3

C231M3

C232M

600 V

VORM

VRRM

BOO V
ITSM (Amps)
60 Hz

250

II)

u

25

9

9

25

25

IGT(mA)

~~~
:EiCffi
-1-1-

>~ ~<.,-

MOTOROLA THYRISTOR DEVICE DATA
2-11

seR's (continued)

On-State (RMS) Current
35 AMPS

25 AMPS
TC

= 7O"C

TC

I

~G
A

•

Case 175-03
Style 1

TO-203AA

Style 1

VRRM

ifG

A

Case 174-04

VDRM

= 65CC

Case 310-02
Style 1

SOV

C233F

MCR3835-2

MCR3935-2

MCR70-2

100 V

C233A

2N3870

2N3896

MCR70-3

20GV

C233B

2N3871

2N3897

400 V

C233D

2N3872

2N3898

600 V

C233M

2N3873
MCR3835-8

2N3899
MCR3935-8

MCR3835-10

MCR3935-10

800 V

C229A
C229B
C229D

MCR70-6

C229M

ITSM lAmps)
60 Hz

250

350

850(1)

300

IGTlmA)

9

40

30

40

VGTIV)

1.5

1.6

1.5

2.5

!j

~5~

::IE~ffi

-t;t;

~w:!
~iil",

:c
CJ

TJ Operating
Range ICC)
(1) Peak capacitor discharge current for tw = ,

-40 to
+100

,",,5.

-40 to
+125

tw is defined as five time constants of an exponentially decaying current pulse

(crowbar applications).

MOTOROLA THYRISTOR DEVICE DATA
2-12

On-State (RMS) Current
35 AMPS
TC

= 4O·C

40 AMPS

TC

I:

= 650C

TC

i'
l

~,

~:

G

Isolated

Case 263-04
Style 1

= BO·C

Case 221A-04
TO-220AB
Style 3

Case 311-02
Style 1

C35F

MCR264-2

50V

C35A

C228A

2N6171

C228A3

MCR264-3

100 V

C35B

C228B

2N6172

C228B3

MCR264-4

200 V

C35D

C228D

2N6173

C228D3

MCR264-6

400 V

C35M

C228M

2N6174

C228M3

MCR264-8

600 V

MCR264-10

BOO V

C35N

225

300

350

300

400

VDRM

VRRM

trSM lAmps)
60Hz
III

CJ

40

50

IGTlmA)

:t:;i!~

i~i5

-titi
3

2.5

1.6

2.5

1.5

VGTIV)

i~~

11101(

:z:

CJ

-65 to
+125

TJ Operating
Range IOC)

-40 to
+125

~".!!! JS'7'5Xl~~~m

',,,",,&r71 nil

MOTOROLA THYRISTOR DEVICE DATA
2-13

a:III&'7

n

seR's (continued)

On-State (RMS) Current
55 AMPS
TC = 75"<:

•

NOTE:
Industry Standards, with a variety
of Custom Specifications
and Leadforms available.

VDRM

VRRM

i!G

TC = 70"C

J

~r
- t;
iw~

~~
~': ~/A ~

~~
~

Isolated

",

G

Casa310·02
Style 1

Case 263·04
Style 1

Case 311·02
Style 1

Cases 221A.Q4
TO-220AB
Style 3

50V

MCR63·2

MCR64-2

MCR65·2

MCR265·2

MCR71·2

100V

MCR63·3

MCR64-3

MCR65·3

MCR265·3

MCR71·3

200 V

MCR63-4

MCR64-4

MCR65·4

MCR265·4

400 V

MCR63-6

MCR64-6

MCR65·6

MCR265·6

600 V

MCR63-8

MCR64-8

MCR65·8

MCR265·8

600 V

MCR63·10

MCR64-10

MCR65·10

MCR265·10

irsMIAmps)
60 Hz

:e:e 15

J

TC = 85"<:

MCR71·6

1700(1)

550

'GTlmA)

40

VGTIV)

3

50

30

1.5

u

TJ Operating
Range ("<:)

Case 263.Q4
Style 1

-40 to
+125

(1) Peak capacitor discharge current for tw = 1 p.s. tw is defined as five time constants of an exponentially decaying current pulse
(crowbar applications).

7
MOTOROLA THYRISTOR DEVICE DATA
2-14

On-State Pulsed Current
100 AMPS

1000 AMPS

TC = 85"C

TC = 65"C

~:

~G

tt}

ease 63-03

Radar Modulators

ease 263-04

TO-64

Style'

Style'

50V
100 V
200 V
2N4199
2N4199JAN

MCR729-5

MCR1718-5

300 V

2N4200
2N4200JAN

MCR729-6

MCR1718-6

400 V

2N4201
2N4201JAN

MCR729-7

MCR1718-7

500 V

2N4202
2N4202JAN

MCR729-8

MCR1718-8

&GO V

2N4203
2N4203JAN

MCR729-9

700 V

2N4204
2N4204JAN

MCR729-10

80DV

100·

1000·

50

VORM

VRRM

ITSM IAmpsl

60Hz

IGTlmAI

~
:iE .... i=
:;)~!!!

:iEiCl5
1.5

VGTIVI

-UU
i~~
Woe

::c

CJ

-65 to
+105

-65 to
+125

TJ Operating
Range I"CI

• Indicates pulse rating Pw = 3 p.s duty cycle = 0.60%.

MOTOROLA THYRISTOR DEVICE DATA
2-15

Thyristors -

TRIACs

Metal/Plastic Packages
0.6 to 40 Amperes
25 to 800 Volts

•

On-State IRMS) Current
0.6 AMPS

2.5 AMPS

TC = 5O"C

TC = 70"<:

F

MTI/

NOTE:
Industry Standards. with a
variety of Custom
Specifications and
Leadforms available.

G

M~2

MT2

Case 29-04

Case 77-05
Style 5

TO-226AA (TO-921
Style 12

VDRM

MT1

Sensitive Gate

200 V

MAC97-4

MAC97A4

MAC97B4

T2322B

T2323B

400 V

MAC97-6

MAC97A6

MAC97B6

T2322D

T2323D

600 V

MAC97-8

MAC97A8

MAC97B8

T2322M

T2323M

SOOV
8

trSM (Amps)

25

II)

~
~
III

~~
i~

:iEec

I
-I
III

IGT @ 25"<: (mA)
MT2(+)G(+)
MT2(+)G(-)
MT2(-)G(-)
MT2(-)G(+)
VGT @ 25"<: (V)
MT2(+)G(+)
MT2(+)G(-)
MT2(-)G(-)
MT2(-)G(+)

10
10
10
10

5
5
5
7

3
3
3
5

2
2
2
2.5

MOTOROLA THYRISTOR DEVICE DATA
2-16

25
40
25
40
2.2
2.2
2.2
2.2

-40 to
+110

TJ Operating
Range ("<:)

10
10
10
10

On-State (RMS) Current
4 AMPS

6 AMPS

TC '" 850C

TC '" 800C

,

G7

MT1
MT2

MT2 MT1

G

Sensitive Gate

Case 221A-04
TO-220AB
Style 4

Case 77-05
Style 5

2N6071

2N6071A

2N6071B

T2500B

T2801B

200 V

2N6073

2N6073A

2N6073B

T2500D

T2801D

400 V

2N6075

2N6075A

2N6075B

T2500M

T2801M

600 V

T2500N

T2801N

800 V

60

80

ITSM (Amps)

80
80
80
80

IGT @ 250C (mA)
MT2(+)G(+)
MT2(+)G(-)
MT2(-)G(-)
MT2(-)G(+)

4
4
4
4

VGT @ 250C (V)
MT2(+)G(+)
MT2(+)G(-)
MT2(-)G(-)
MT2(-)G(+)

30

VDRM

I/)

30

30
-

5
5
5
10

3
3
3
5

@ -40°C

@ -40°C

2.5

2.5
2.5
2.5
2.5

2.5
-

25
60
25
60
2.5
2.5
2.5
2.5

TJ Operating
Range (OC)

-40 to
+110

MOTOROLA THYRISTOR DEVICE DATA
2-17

CJ

i=
ii2
w

I/)

~~
!!l~

~CJ

::IE-'

<
CJ

ii2

t;
w

-'

w

TRIACs (continued)

On-State (RMS) Current
8 AMPS

6 AMPS
TC = 8O"C

•

.,

Mnl
MT2

G

Ca•• 221A-04
TO-220AB

i

~i

:lEe

~O
:IE~

g
w

G

Casa 221C-02

StyI.3

Style 4

200 V

T2500BFP

SC141B

SCl43B

MAC218A4

MAC218A4FP

400 V

T2500DFP

SC141D

SCl43D

MAC218A6

MAC218A6FP

600 V

T2500MFP

SC141M

SCl43M

MAC218A8

MAC218A8FP

800 V

T2500NFP

SC141N

MAC218Al0

MAC218Al0FP

IGT @ 25"C ImA)
MT2I+)GI+)
MT2I+IGI-)
MT21-IGI-1
MT2I-IGI+1
VGT @ 25"C IVI
MT21+IGI+1
MT21+IGI-1
MT2I-IGI-1
MT21-IGI+1
TJ Operating
Range I"CI

100

80

trsM lAmps)

~

MT2

G

Case 221c-02
Styl.3

VDRM

Mnl

Mn
MT2

80
80
80
80

50
50
50

50
50
50
80

2.5
2.5
2.5

2
2
2
2.5

-

4
4
4
4

-40 to
+110

MOTOROLA THYRISTOR DEVICE DATA
2-18

-40 to
+125

On-State (RMS) Current
SAMPS
TC

= soot

,

MT1
MT2

G

•

Sensitive Gate

Case 221A-04
TO-220AB

Style 4

2N6342
2N6346

T2800B

T2802B

MAC228A4

MAC229A4

200 V

2N6343
2N6347

T2800D

T2802D

MAC228A6

MAC229A6

400 V

2N6344
2N6348

T2800M

T2802M

MAC228A8

MAC229A8

600 V

MAC228A10

MAC229A10

SOOV

2N6345
2N6349
100

80

VDRM

ITSM (Amps)

en
50
75#
50
75#
2
2.5#
2.5
2.5#

25
60
25
60

50

-

50

-

2.5
2.5
2.5
2.5

5
5
5
10

2.5

10
10
10
20
2
2
2
2.5

-

2.5

-

IGT @ 25°C (mA)
MT2(+)G(+)
MT2(+)G(-)
MT2(-)G(-)
MT2(-)G(+)
VGT @ 250C (V)
MT2(+)G(+)
MT2(+)G(-)
MT2(-)G(-)
MT2(-)G(+)

~

ii:
w

~~
~~

>'~

TJ Operating
Range (OC)

:',~

VORM

(I)

iti
w

:E

::Jiil!

!!1~
Xu

~-'
<
u

~

w
-'
w

·:"i..'W'J:",%\,,""~j\mUllU'M"'" ~,¢;Ftt~;r.U J''l'i-,rti_,,%!_Y4':!~.'Nk '''*, '"

Mt.nt£~ff'4,;"#(G~_·~~&;" f,:"." f!<"'..',P",J./;t:/:,";~'1.i,;~",:,""'0'''i'¥., ~..""l;~7"4i->u.,~,:w,1f"" .. i''%,\':h}'.''A;'}'i;.;'''.jIJf,!~W~,~f",,lI,'
",

MOTOROLA THYRISTOR DEVICE DATA
2-21

TRIACs (continued)

On-State (RMS) Current
15 AMPS
TC

TC

= 75°C

~,I
MT2

,

MT1
MT2

G

G

Case 221A-04
TO-220AB

Case 221C-02

Style 3

VDRM

25 AMPS

20 AMPS

= 900c

Style 4

TC

= 900c

'M*
MT1

G

JlMT2
Hermetic and
Isolated
Case 326-01
Style 2

200 V

MAC15A4FP

MAC320A4FP

MAC320A4

MAC25A4

400 V

MAC15A6FP

MAC320A6FP

MAC320A6

MAC25A6

600 V

MAC15A8FP

MAC320A8FP

MAC320A8

MAC25A8

800 V

MAC15A10FP

MAC320A10FP

MAC320A10

MAC25A10

ITSM (Ampsl

150

250

IGT @ 250C (mAl
MT2(+IG(+1
MT2(+IG(-1
MT2(-IG(-1
MT2(-IG(+1

50
50
50
80

70
70
70
100

III

~

a:w

~~

i!/il~
>---le from 1 Hz to 1 MHz.

Vs

Plastic TO-92 (Case 29-0419)

•

MU10
2N4870
2N4871
MU4891
MU4892
MU4893
MU4894

0.5
0.56
0.7
0.55
0.51
0.55
0.74

5
5
5
5
2
2
1

0.85
0.75
0.85
0.82
0.69
0.82
0.86

1
1
1
0.01
0.01
0.01
0.01

1
2
4
2
2
2
2

Ip
"0=
10 kO

Device
Type

I

IV
RG=
1 MO

IGAO
@40V

0.5
0.56
0.68
0.68
0.56
0.7
0.7
0.55
0.74
0.72

0.85
0.75
0.82
0.82
0.75
0.85
0.85
0.82
0.86
0.8

nAMax ,J. Min ,J. Max

,J. Mex

1
12
0.2
0.01
0.1
0.1
0.05
0.01
0.01
0.01

1
4
8
1
2
4
6
2
2
2

ITMIHV(-I

t.~

Surface Mount SOT-23 (Case 318-03/20)
MMBP6027I
I. MMBP6028.

Device Type

s ...- V(+I breakover voltage in eithe
direction, the device switches
to a low-voltage on-state.

V~ ~(BOI

VSO
Volts

trSM
Amps

Min

20
20
20
20
20
20

104
110
120
220
240
250

I

10
10

I
.

70
70

50
25

I

Max

Silicon Bidirectional Switch
(SBS)
1(+1
This versatile trigger device
exhibits highly symmetrical
Vs
bidirectional switching charIH I
V(-I
IS
acteristics which can be modIS:.,..,""\.....""'t±+"'''''''''''''''''
IH

115
125
135
250
270
280

110
120
220
240
250

v(+ 1

Vs
11-1

Device
Type
4
4
4
4
4

2
0.15

vi~es similar in opera~ion to a

Case 59-0411
MKP9V120
MKP9V130
MKP9V240
MKP9V260
MKP9V270

I

High voltage trigger de-

IS

Case 267-03/1
MK1V115
MK1V125
MK1V135
MK1V240
MK1V260
MK1V270

5
1

'Also available as JAN and JANTX devices.

IDRM~I(BOI Triac. Upon reaching th e

C----l 1(-1

50
25

Metal TO-18 (Case 22-03/6)

'Also available as JAN and JANTX devices.

SIDACsl(+1

70
25

10
10
5
5
2
2
2
2
0.4
2
1
0.4

"0=
1 MO

Plastic TO-92 (Case 29-04/16)

Metal TO-18 (Case 22A-01/1)
MU20
2N2646
2N2647
2N3980
2N4851
2N4852
2N4853
2N4948*
2N4949*
2N5431 *

RG =
10kO

125
135
250
270
280

Vs
Volts
Min

1

Max

Plastic TO-92/T0-226AA

MOTOROLA THYRISTOR DEVICE DATA
2-28

ified by means of a gate lead.
Requires a gate trigger current of only 250 pA dc for
triggering.

IS
,J. Max

IH
mAMax

Data Sheets

3-1

2N682
thru
2N692

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristors
· .• designed primarily for half-wave ac control applications, such as motor
controls, heating controls and power supplies; or wherever half-wave silicon
gate-controlled, solid-state devices are needed.

seRs
25 AMPERES RMS
25 thru 800 VOLTS

• Glass Passivated Junctions and Center Gate Fire for Greater Parameter
Uniformity and Stability
• Blocking Voltage to 800 Volts
G

AO

.("

OK

CASE 263-04

•

STYLE 1

MAXIMUM RATINGS (TJ = 125°C unless otherwise noted.)
Symbol

Rating
*Peak Repetitive Off-State Blocking Voltage, Note 1
2N682
2N683
2N685
2N688
2N690
2N692

VRRM
or
VORM

·Peak Non-Repetitive Reverse Voltage

VRSM

Unit
Volts

50
100
200
400
600
800
Volts
75
150
300
500
720

2N682
2N683
2N685
2N688
2N690
2N692

960

*RMS On-State Current (All Conduction Angles)
*Average On-State Current (TC

Value

= 65°C)

*Peak Non-Repetitive Surge Current
(One cycle, 60 Hz, preceded and foUowed by rated current and voltage)
Circuit Fusing Considerations
(TJ = -40 to + 125°C, t = 1 to 8.3 ms)
*Peak Gate Power
*Average Gate Power

IT(RMS)

25

Amps

IT(AV)

16

Amps

ITSM

150

Amps

12t

93

A 2s

PGM

5

Watts

PG(AV)

0.5

Watt

·Indicates JEDEC Registered Data
(cont.}
Note 1. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
voltage. Devicas should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-2

2N682 thru 2N692
MAXIMUM RATINGS - continued (TJ

= 125°C unless otherwise noted.)

Rating

Symbol

Value

Unit

IGM

2
1.2

Amps

VFGM
VRGM

10
5

Volts
°c

*Peak Forward Gate Current 2N682-2N688
2N690, 2N692
*Peak Gate Voltage -

Forward
Reverse

TJ

-65 to + 125

Tstg

-65 to +150

°C

-

30

in. lb.

*Operating Junction Temperature Range
*Storage Temperature Range
Stud Torque

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TJ

= 25°C unless otherwise noted.)

Symbol

Characteristic
*Average Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open, TJ = 125°C)

IO(AV), IR(AV)
2N682-2N683
2N685
2N688
2N690
2N692

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25°C
TJ = 125°C

IORM,IRRM

*Peak On-State Voltage
(lTM = 50.3 A peak, Pulse Width .. 1 ms, Duty Cycle .. 2%)

VTM

Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 50O)
*(VAK = 12 Vdc, RL = 500, TC = -65°C)

IGT

Gate Trigger Voltage (Continuous de)
(VAK = 12 Vdc, RL = 50O)
*(VAK = 12 Vdc, RL = 500, TJ = -65°C)

VGT

*Gate Non-Trigger Voltage
(Rated VORM, RL = 500, TJ

VGO

Holding Current
(VAK = 12 Vdc, Gate Open)

=

Typ

Max

-

-

6.5
6
4
2.5
2

-

-

10
20

pA
mA

2

Volts

-

-

40
80

-

0.65

2
3

-

= 125°C)

Critical Rate of Rise of Off-State Voltage
(Rated VORM, Exponential Waveform, TJ

Min

-

mA

mA

Volts

0.25

-

-

Volts

'H

-

7.3

50

mA

dv/dt

-

30

-

V//J.s

125"C, Gate Open)

'Indicates JEDEC Registered Data.

MOTOROLA THYRISTOR DEVICE DATA
3-3

-

-

Unit

•

2N682 thru 2N692
TYPICAL CHARACTERISTICS

FIGURE 1 - AVERAGE CURRENT DI;,RATING
125

I""I1II

....

"Iii: ~

l3

... 115

~

~

~

.....

II:

=>

I

105

~

II:

~
~ 95

........~
u
:IE

I

.......: ~ ~
I" ~

0: =

85

I

A-1"1-

~

~

I--I--

r-r-

...... .:-.

:"'

" " " r-... "- "-r-.. "
r--...
r-...:

300

<

,1200,

~65

j I
1 I

.....

55

o

2.0

4.0

6.0

8.0

10

12

24

I

:"'

r.....
18~

~ 16r---r-~--~-.~~~~~-r---1-~

'"<

~ 12t---r--i--::~~~~~~t---r--i-~
<
TJ = 1250 C

S8.01---+--~ ~5tIII'5oI.c..-+---+--t--+--i
~

... 4.0t---iII.

1
14

16

2.0

IT(AV). AVERAGE ON·STATE CURRENT (AMP)

150

10

•

~140

LI'

!Z
...

~

II:

~

~
u

...

!Z
~

I

250 C

~

II

10

...
~
z
u

7.0

":&11 0

3.0

~
~

2.0

100

I

1.0

J

:E

.1::' 1.0

o.1
o. 5

I

o. 3

o.2

o. 1
1.0

~

3.0

4.0

NUMBER OF CYCLES

I

i!!

I
1.4

1.8

2.2

2.6

16

14

~

......

r"-I'!o,
2.0

I

z

~

CURRENT AND VOLTAGE

I

o

S
...'"

"" "

1=60 Hz

~

III

5.0

12

~=

['...

'"~ 120
GE IS PRECEDED AND
'" r- SUR
FOLLOWED BY RATED

II:

=>

130

""

II:

20

10

8.0

f"'...

0::

TJ = 1250 C , /

I

6.0

FIGURE 4 - MAXIMUM NON·REPETITIVE SURGE CURRENT

FIGURE 3 - ON-sTATE CHARACTERISTICS

30

4.0

IT(AV). AVERAGE DN.sTATE CURRENT (AMPS)

10q

50

-1 "I-," --t--+---t--::;---bI'~""I--~

i!i

I
dc_ I--

"

900

X

i

1(100

A

~28

ffi20t-_Q_=_CrON_D_u_a,I_DN_AN_G~L_E_-+~~~~~~~~~

~o = CONDUCTION ~NGLE

60 0

~ 15

FIGURE 2 - MAXIMUM ON·STATE POWER DISSIPATION

3.0

VTM. MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

MOTOROLA THYRISTOR DEVICE DATA
3-4

6.0

8.0

10

2N682 thru 2N692
FIGURE 5 - THERMAL RESPONSE

~

1.0
0.7
0.5

II: _

0.3
0.2

w

~
ili
.... c

...l,...-

~~
ffi ~ o. 1
"':.

V

:: ~ 0.07
~ - 0.05
in
~

ZBJCIII = RBJC. rill

...-

0.03

II:

~

0.02

:g

0.0 1
0.1

0.2

0.3

0.5

2.0

1.0

3.0

5.0

10

100

20 30
50
I. TIMElmsl

.§
f-

30

;:5 20
a:
a:

=>

'-'
w

0-

10

OFF·STATE VOLTAGE 12 V'::
RL-50!!-

"~

~

1\

;:5

TJ = -55 0 C

"""

'"

......

~

,..: 3.0

a:

a:

'-'

III25 C

0.5

1.0

10

OFlsTATlVOLT~GERL=50n= JV
~

ffi

7.0

'"'"
~

50

i'o...

.........

............

w

0-

i'--..

«

~

2.0

20

5.0

III

10

20

50

100

200

20
60

-40

-20

lL-

'"
>
ffi

...........

0.6

........

~

'"
~

II:

........

60

80

"

100

120

OFLTA,iE VOL

...........

~AGE = \2 V

RL=5O!!-

............

........

........

.....
~

~

0-

w

~

40

20

OFF.lTATE lOLT)GE =
RL=50!!

.......

20

.........

FIGURE 9 - HOLDING CURRENT

FIGURE 8 - GATE TRIGGER VOLTAGE

'"~ 0.8 ...........
'"«
!:;

0

"

TJ. JUNCTION TEMPERATUR E lOCI

1.0
on

,

'"~ 3.0

PULSE WIDTH (ILS)

!:;

10 k

=>

0

1.0
0.2

['...

0-

...........

2.0 k 3.0 k 5.0 k

1.Ok

2.0

« 7.0
><
« 5.0
.<;!

500

FIGURE 7 - GATE TRIGGER CURRENT

FIGURE 6 - PULSE TRIGGER CURRENT
100
70
50
;;(

200 300

........

..........

0.4

.............

.............

'",..:

...........

3.0

>'"
0.2
-60

-40

-20

20

40

60

80

100

120

140

2.0
-60

-40

m

-20

~

W

W

TJ. JUNCTION TEMPERATURE lOCI

TJ. JUNCTION TEMPERATURE lOCI

MOTOROLA THYRISTOR DEVICE DATA
3-5

~

1m

~

2N1595
thru

Silicon Controlled Rectifiers

2N1599

Reverse Blocking Triode Thyristors
These devices are glassivated planar construction designed for gating operation
in mA/pA signal or detection circuits.
• Low-Level Gate Characteristics -IGT = 10 mA (Max) @ 25·C
• Low Holding Current - IH = 5 mA (Typ) @ 25·C
• Glass-to-Metal Bond for Maximum Hermetic Seal

SCRa
1.6 AMPERES RMS
50 thru 600 VOLTS

G

.~

AO

OK

,f/!
CASE 79-04
(TO-205AD)
STYLE 3

•

-MAXIMUM RATINGS (TJ = 125°C unless otherwise noted, RGC = 1 kil.)
Rating

Symbol

Value

Unit

Repetitive Peak Reverse Blocking Voltage, Note 1

2N1595
2N1596
2N1597
2N1599

VRRM

50
100
200
400

Volts

Repetitive Peak Forward Blocking Voltage, Note 1

2N1595
2N1596
2N1597
2N1599

VORM

50
100
200

Volts

400
IT(RMS)

1.6

Amps

Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TJ = -65 to + 125°C)

ITSM

15

Amps

Peak Gate Power

PGM

0.1

Watt

PG(AV)

0.D1

Watt

IGM

0.1

Amp

VGFM
VGRM

10
10

Volts

TJ

-65 to +125

·C

lstg

-65 to +150

°C

RMS On-State Current
(All Conduction Angles)

Average Gate Power
Peak Gate Current
Peak Gate Voltage -

Forward
Reverse

Operating Junction Temperature Range
Storage Temperature Range

'Indicates JEOEC Registered Data.
Note 1. VORM or VRRM for all types can be applied on a continuous DC basis without incurring damage.

MOTOROLA THYRISTOR DEVICE DATA
3-6

2N1595 thru 2N1599
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol

Min

Typ

Max

Unit

-

10
6

pA.
mA

VTM

-

1.1

2

Volts

*Gate Trigger Current (Continuous de)
(VO = 7 V, RL = 12 Ohms)

IGT

-

2

10

mA

*Gate Trigger Voltage (Continuous de)
(VO = 7 V, RL = 12 Ohms)
(VO = 7 V, RL = 12 Ohms, TJ = 125°C)

VGT

-

0.7

3

Reverse Gate Current
(VGK = 10 V)

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C

IORM,IRRM

*Peak On-State Voltage
(IF = 1 Ade, Pulsed, 1 ms (Max), Outy Cycle .. 1%)

Volts

0.2

-

IGR

-

17

-

mA

Holding Current
(VO = 7 V)

IH

-

5

-

mA

Turn-On Time
(lGT = 10 mA.IF = 1 A)
(lGT = 20 mA, IF = 1 A)

tgt

0.8
0.6

-

-

Turn-Off Time
(IF = 1 A,IR

tq

10

-

=

1 A, dV/dt

= 20 V/JLS, TJ =

-

125°C)

JLS

JLS

'Indicates JEDEC Registered Data.
CURRENT DERATING
FIGURE 1 - CASE TEMPERATURE REFERENCE

FIGURE 2 - AMBIENT TEMPERATURE REFERENCE
140r---~--~N~OT~E~S:--------------~-----r--~

I~.

3¢. 6¢, CIRCUIT - RESISTIVE OR
...,.....--+- 111 dc.INDUCTIVE
LOAD. 50 TO 400 Hz -=,.-+-----i

w

'"
;3

121 125°C JUNCTION TEMPERATURE

~Gll0~--~~~~~~--~--~~--~t-~~~
~~

~ ~100~--~~~~~~~-P~~~
-'I-

« 0:
~ ~
~
r5
x I~

90 ~--+--

300-

,- 60°-

I

90-

NOTES:
80 111 dc. 1<,,30. S", CI RCUIT _ ---'t"'-~'IRESISTIVE OR INDUCTIVE LOAD, 50 to 400 Hz
70 121 CASE TEMPERATURE MEASURED AT CENTER -+----t--'~_i
OF BOnOM OF CASE
60 131 125°C JUNCTION TEMPERATURE
o

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

IFIAVI, AVERAGE FORWARD CURRENT IAMPI

0.2

O.~

0.6

0.7

IFIAVI. AVERAGE FORWARD CURRENT IAMPI

l.1IJ1IJ.i~~~'~~~~:.\~II• •I:iII.111
MOTOROLA THYRISTOR DEVICE DATA
3-7

liB

,2N1843
thru
2N1849

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristor
· .. designed primarily for half-wave ac control applications, such as motor con.
trois, heating controls and power supplies; or wherever half-wave silicon gatecontrolled, solid-state devices are needed.

SCRs
16 AMPERES RMS
50 thru 400 VOLTS

• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
• Blocking Voltage to 400 Volts

.~

AO

G

OK

CASE 263-04
STYLE 1

•

MAXIMUM RATINGS (TJ = 100·C unless otherwise noted.)
Rating

Symbol

*Peak Repetitive Forward or Reverse Blocking Voltage, Note 1
2N1843
2N1844
2N1846
2N1849

VDRM
or
VRRM

*Non-Repetitive Peak Reverse Voltage

VRSM

Value
50
100
200
400

Volts
75
150
300
500

2N1843
2N1844
2N1846
2N1849
*Average On-State Current (TC

= 35·C)

*Peak Non-Repetitive Surge Current
(One cycle, 60 Hz, preceded and followed by rated current and voltage)
Circuit Fusing
(TJ = -40 to

Unit
Volts

IT(AV)

10

Amps

ITSM

125

Amps

12t

60

A 2s
Watts

+ 100·C, t = 1 to 8.3 ms)

*Peak Gate Power
*Average Gate Power
*Peak Forward Gate Current
*Peak Gate Voltage -

Forward
Reverse

*Operating Junction Temperature Range
*Storage Temperature Range

PGM

5

PG(AV)

0.5

Watt

IGM

2

Amps

VFGM
VRGM

10
5

Volts

TJ

-40 to

+ 100

·C

Tstg

-40 to

+ 125

·C

'Indicates JEDEC Registered Data.
Note 1. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage, Ratings apply for zero or negative gate
voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

I
MOTOROLA THYRISTOR DEVICE DATA

3-8

111.1111 II I "I' II

2N1843 thru 2N1849
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

=

25°C unless otherwise noted.)
Symbol

Characteristic
*Average Forward or Reverse Blocking Current
(VO = Rated VORM, VR = Rated VRRM, TC = 35°C)
2N1843
2N1844
2N1846
2N1849

Typ

Min

Max

Unit
mA

IO{AV), IR{AV)

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25°C
TC = 100°C

IORM,IRRM

*Peak On-State Voltage
(lTM = 31.4 A peak, Pulse Width .. 1 ms, Duty Cycle .. 2%)

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 Vdc, RL = 50 n)
*(VO = 12 Vdc, RL = 50 n, TC = -40°C)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, RL = 50 n)
*(VO = 12 Vdc, RL = 50 n, TC = -40°C)
*(VO Rated VORM, RL = 50 n, TC = 100°C)

VGT

-

-

19
12.5
6
4

-

-

10
6

/LA
mA

-

-

2.5

Volts

-

6

80
150

mA

-

Volts

-

-

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM, Exponential Waveform,
TC = 100°C, Gate Open)

3.5

-

0.3

Holding Current
(VO = 12 Vdc, Gate Open)

-

0.65

-

IH

-

7

-

mA

dvldt

-

30

-

V//Ls

•

'Indicates JEDEC Registered Data.

FIGURE 1 - AVERAGE CURRENT DERATING

FIGURE 2 - GATE TRIGGER CURRENT
2.0

!...

OFFISTATE)VOlT~GE = dV

Rl=50l!-

z

~1 0
cr

!"....

"

:::>

u

ffi

7. 0

~ 40 ~--~----~-

'"'"
~

5. 0

~

!;(

........

.

.......

~

w

I,

'"~ 3.0

~ 20~--~----~--1---~----4---~----4---~
::>
:;;
DC, 1... 3,.'. 6 ... CIRCUIT·RESISTIVE OR
INDUCTIVE LOAD, 50 TO 400 CPS
~

~

.2

r....

1""-

I
-~

2.0

4

8

10

12

14

16

IT(AV). AVERAGE FORWARD CURRENT (AMPS)

-60

-40

-20

20

40

60

80

TJ. JUNCTION TEMPERATURE IOC)

MOTOROLA THYRISTOR DEVICE DATA
3-9

100

120

140

2N1843 thru 2N1849

.

1.0

FIGURE 3 - GATE TRIGGER VOLTAGE
OFF1TATE

~
o

~

0.8

.......

'"~

j'.....

o

>

ffi

0.6

FIGURE 4 - HOLDING CURRENT
20

~OLTA~ERL=50!!
= lJV_

OFIF-5TATIE VOL

RL=50U-

~

~ 10

........

..........

w

..........

'";:'"
....
w
=: 0.4

..........

'"'"
'"z
§

..........

........
i""o.

a:
a:

........

~AGE = \2 V

~

.....
........

5.0

o

%

..........

i

'",.:

3.0

~
0.2
-60

-40

-20

20

40

60

80

100

120

2.0
-60

140

-40

20

-20

40

~

~

TJ. JUNCTION TEMPERATURE IOC)

TJ. JUNCTION TEMPERATURE IOC)

•

MOTOROLA THYRISTOR DEVICE DATA
3-10

~

120

m

2N1843A
thru
2N1849A

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristor
· .. designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gatecontrolled, solid-state devices are needed.

SCRs
16 AMPERES RMS
50 thru 400 VOLTS

• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
• Blocking Voltage to 400 Volts
• Junction Temperature Rated @ 125°C

~

AO

G

OK

CASE 263-04
STYLE 1

MAXIMUM RATINGS (TJ = 100°C unless otherwise noted.)
Symbol

Rating

*Peak Repetitive Forward or Reverse Blocking Voltage, Note 1
2Nl843A
2N1844A
2N1846A
2Nl849A

VDRM
or
VRRM

*Non-Repetitive Peak Reverse Voltage

VRSM
2Nl843A
2Nl844A
2Nl846A
2Nl849A

Value

Unit

Volts
50
100
200
400
Volts
75
150
300
500

*Average On-State Current (TC = 80·C)

IT(AV)

10

Amps

*Peak Non-Repetitive Surge Current
(One cycle, 60 Hz, preceded and followed by rated current and voltage)

ITSM

126

Amps

12t

60

A 2s
Watts

Circuit Fusing
(TJ = »5 to + 125°C, t = 1 to 8.3 ms)
'Peak Gate Power
*Average Gate Power
'Peak Forward Gate Current
*Peak Gate Voltage -

Forward
Reverse

*Operating Junction Temperature Range
*Storage Temperature Range

PGM

5

PG(AV)

0.5

Watt

IGM

2

Amps

VFGM
VRGM

10
5

Volts

TJ

-65 to + 125

·C

Tstg

-65 to +125

·C

*Indicates JEDEC Registered Data.
Note 1. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-11

•

2N1843A thru 2N1849A
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

=

125'C unless otherwise noted)

Characteristic

Symbol

*Average Forward or Reverse Blocking Current
(VO = Rated VORM or VR = Rated VRRM, gate open, TC
2N1843A
2N1844A
2N1846A
2N1849A

Typ

Unit

Max

mA

= 125'C)

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25'C
TJ = 125'C

-

-

19
12.5
6
4

-

-

10
6

pA
mA

-

-

2.5

Volts

IORM,IRRM

*Peak On-State Voltage
(lTM = 31.4 A peak, Pulse Width", 1 ms, Duty Cycle'" 2%)

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 Vdc, RL = 500)
*(VO = 12 Vdc, RL = 500, TC = -65'C)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, RL = 500)
*(VO = 12 Vdc, RL = 500, TC = -40'C)
*(VO = 12 Vdc, RL = 500, TC = -65'C)
*(VO = Rated VORM, RL = 500, TC = 125'C)

VGT

mA

-

6

Volts

-

0.65

0.25

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM, Exponential Waveform,
TC = 125'C, Gate Open)

80
150

-

-

-

3.5
3.7

-

IH

-

7

-

mA

dvldt

-

30

-

VII's

Holding Current
(VO = 12 Vdc, Gate Open)

•

Min

IO(AV), IR(AV)

"Indicates JEDEC Registered pata.

FIGURE 1 - AVERAGE CURRENT DERATING

FIGURE 2 - GATE TRIGGER CURRENT
2.0
~

OFFISTATEIVDLT~GE =1~ V

I"'-

5

I-

~

cc 10
cc

RL=50n-

"'-

G
ffi 10

........

........

'"
<:!
~

...........

5.0

w

I...........

I-

cr:

::;;

=>
::;;

;:;:

cr:
::;;
.....U

DC
70
60
0

2

4

10

12

14

"'"

'"~ 3.0

16

ITiAVI. AVERAGE FORWARD CURRENT lAMPS)

2.0
-60

-40

20

-20

40

60

.........

80

...........
100

120

140

TJ. JUNCTION TEMPERATURE 1°C)

.;'lrrl~""""'.·I"'!!!!!III... " r ' !
MOTOROLA THYRISTOR DEVICE DATA

3-12

2N1843A thru 2N1849A

;:;;

OFF lTATE lOLTA1GE °

':;
o

~

FIGURE 4 - HOLDING CURRENT

FIGURE 3 - GATE TRIGGER VOLTAGE

10

.............
08

'"
«
':;
o
>

20

lL-

OFIF.STATIE VOL

Al = 50!!

........

i"....

~ 06

........

.............

'"
!i:'
'">-w

........

.............

~AGE ° 112 V

RLo501!-

r--.... ........

.....
..... 1'-..

............

r.....
..........

~ 04

r--....

'"

r--....

.......... ~

30

~

>

02
-60

-40

-20

20

40

60

80

100

120

20
-60

140

Tj, JUNCTION TEMPERATURE IOC)

-40

M

-20

~

W

~

1~

1M

1~

Tj, JUNCTION TEMPERATURE IOC)

•

1 1 1 1 1 1 1 ._ _
MOTOROLA THYRISTOR DEVICE DATA
3-13

2N2323
thru
2N2329

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
· .. all diffused PNP devices designed for gating operation in
detection circuits.
•
•
•
•

mAlIiA signal or
SCRs
1.6 AMPERES RMS
50 thru 400 VOL1S

Low-Level Gate Characteristics - IGT = 200 IiA (Max) @ 25°C
Low Holding Current - IH = 2 mA (Max) @ 25°C
Anode Common to Case
Glass-to-Metal Bond for Maximum Hermetic Seal

G

---t~~--()O K

A 0-0

CASE 79-04
(TO-205AD)
STYLE 3

•

*MAXIMUM RATINGS (TC

= 25°C unless otherwise noted, RGK =

1000 ohms.)

Rating

Symbol

Peak Repetitive Forward and Reverse Blocking Voltage, Notes 1 and 2
2N2323
2N2324
2N2326
2N2329

VORM
or
VRRM

Non-Repetitive Peak Reverse Blocking Voltage
(t .. 5 ms, Notes 1 and 2)
2N2323
2N2324
2N2326
2N2329

VRSM

Unit
Volts

50
100
200
400
Volts
75
150
300
500

RMS On-State Current
(All Conduction Angles)
Average On·State Current

Value

TC = S5°C
TA = 30°C

Peak Non-Repetitive Surge Current
(One cycle, 60 Hz, TC = SO°C)
Preceded and followed by rated current and voltage

IT(RMS)

1.6

Amps

IT(AV)

1
0.45

Amp

ITSM

15

Amps

*Indiciates JEDEC Registered Data.

(cont.)

Notes: 1. Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied
exceeds the rated blocking voltage.
2. Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode.

MOTOROLA THYRISTOR DEVICE DATA
3-14

2N2323 thru 2N2329
-MAXIMUM RAnNGS -

continued (TC = 25·C unless otherwise noted, RGK = 1000 ohms.)
Rating

Peak Gate Power

Symbol

Value

Unit
Watt

PGM

0.1

PG(AV)

0.D1

Watt

Peak Gate Current

IGM

0.1

Amp

Peak Gate Voltage

VGM

6

Volts

TJ

-65 to + 125

·C

Tstg

-65 to +150

·C

-

+230

·C

Average Gate Power

Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature
(>1/16" from case, 10 s max)

ELECTRICAL CHARACTERISTICS (TC

= 25·C unless otherwise noted, RGK =

1000 ohms.)
Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25·C
TJ = 125·C
Peak On-State Voltage
(lTM = 1 A peak)
(lTM = 3.14 A Peak, TC

VTM

= 85·C)*

Gate Trigger Current (Continuous de), Note 1
(VO = 6 Vde, RL = 100 ohms)
(VO = 6 Vde, RL = 100 ohms, TC = -65·C)

IGT

Gate Trigger Voltage (Continuous de)
(VO = 6 Vde, RL = 100 ohms)
(VO = 6 Vde, RL = 100 ohms, TC = -65·C)*
(VO = Rated VORM, RL = 100 ohms, TJ = 125·C)*

VGT

Holding Current
(VO = 6 Vde)
(Vo = 6 Vdc, TC
(VO = 6 Vde, TC

IH

=
=

Min

Max

Unit

-

-

10
100

pA
pA

-

1.5
2

-

200
350*

-

0.8
1

0.1

-

-

2
3

IORM,IRRM

-,

-65·C)'
125·C)*

0.15

Volts

p.A

Volts

•

rnA

-

*Indicates JEDEC Registered Data.

Note 1. RGK current is not included in measurement.

CURRENT DERATING
FIGURE 2 - AMBIENT TEMPERATURE

FIGURE 1 - CASE TEMPERATURE

~

~
w
:::>
'"
>-

~ 140

130

:::>

'",.w

110

w

100

>-

'"
«

~ 120 ~-+--+--+--r-~

~

120

~

w

>-

,.

--1Q~

~

:::'i

,.«a;

u

w

~

w

90

~

'"
«

3:

:3

,.;(
,.
:::>

,.«x

u'

>-

--la~

100

>-

a= CONOUCTION ANGLE

a= CONDUCTION ANGLE

80
60

«
'"

3:

80

:3

40

;(

,.

,.

10

:::>

60
0

02040,60,81,01214
ITIAV) AVERAGE ON,STATE CURRENT lAMP)

1-6

,.«x

«'

de

20
0
0

0,1

>-

;ilr;;t.t;"
MOTOROLA THYRISTOR DEVICE DATA
3-15

OJ

2N2574
thru
2N2579
MCR649AP
1 thru 10

Silicon Controlled
Rectifier
Reverse Blocking Triode Thyristor
· .. designed for industrial applications such as motor controls, heater controls, and
power supplies, wherever half-wave or dc silicon gate controlled devices are
needed.
• Glass Passivated Junctions for Maximum Reliability
• Center Gate Geometry for Parameter Uniformity
• High Surge Current, ITSM = 260 A, for Crowbar Service

MAXIMUM RATINGS (TJ = 125°C unless otherwise noted.)
Rating

•

Symbol

Peak Repetitive Forward and Reverse Blocking
Voltage. Note 1
MCR649APl
2N2574. MCR649AP2
2N2575. MCR649AP3
2N2576. MCR649AP4
2N257S. MCR649AP6
MCR649APS
MCR649AP9
MCR649AP10
On-State Current
Circuit Fusing
(TJ = -65'C to

2N Series
MCR Series
2N Series

VDRM
or
VRRM

Peak Gate Power -

= - 65' to + 125°C)

Forward

Average Gate Power -

Forward

Unit

25
50
100
200
400
600
700
SOO

CASE 54-05
STYLE 2
MCR649AP-' thru
MCR649AP-'0

25
20

Amps

12t

275
235

A 2s

ITSM

260

Amps
Watts

PGM

5

PG(AVG)

0.5

Watt

Peak Gate Current -

Forward

IGM

2

Amps

Peak Gate Voltage -

Forward
Reverse

VGFM
VGRM

10
5

Volts

TJ

-65 to

+ 125

'C

Storage Temperature

Tstg

-65 to

+ 150

°C

Thermal Resistance. Junction to Case

RIIJC

Operating Junction Temperature

1.5

°C/W

Note 1. VORM and VRRM for all types can be applied on a continuous basis without incurring damage.
Ratings apply for zero or negative gate voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-16

CASE 61-03
STYLE 1
2N2574ithru 2N2579

Volts

IT(RMS)

+ 125'C, t". S.3 ms) MCR Series

Peak Surge Current
(Half Cycle. 60 Hz, TJ

Value

SCRs
20 and 25 AMPERES RMS
25 thru 800 VOLTS

2N2574 thru 2N2579. MCR649AP1 thru MCR649AP10
ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25'C
TJ = 125'C

-

-

10
5

pA
mA

-

40

mA

-

0.7

0.3

-

3.5

VTM

-

1.1

1.4

IH

-

10

-

mA

tgt

-

1

-

p.s

tq

-

30

-

p.s

dv/dt

-

30

-

V/p.s

VGT
125'C)

Forward On Voltage
(lTM = 20 Ade)
Holding Current
(VO = 7 Vde, Gate Open)

= Rated VORM)
=

Unit

0.6

Gate Trigger Voltage (Continuous de)
(VO = 7 Vde, RL = 1000)
(VO = Rated VORM, RL = 1000, TJ

Turn-Off Time
(IT = 10 A, IR = 10 A, dv/dt = 20 V/p.s, TJ
(Vo = Rated Voltage VORM)

Max

-

IGT

Turn-On Time (td + t r )
(lGT = 50 mA, IT = 10 A, Vo

Typ

IORM,IRRM

Gate Trigger Current (Continuous dc)
(VO = 7 Vdc, RL = 1000)

=

Min

Volts

-

Volts

125'C)

Forward Voltage Application Rate (Exponential)
(Gate Open, TJ = 125'C, Vo = Rated VORM)

FIGURE 2 - GATE TRIGGER CHARACTERISTICS

FIGURE 1 - CURRENT DERATING

MAXIMUM ALI.OWABLE
FORWARD GATE
CURRENT
IGM =2 AMP
125

:--+----I--lC\
I

120
115
110

~
w

00

I
-----1

1.0

lBOo -

I---~~~~-t----="""" ~ONDUCTIO~
ANGLE

....

100

'"
....

Q,

95

:::J

g

'ww"
....
....U

AS A TRIGGER CIRCUIT DESIGN CRITERIA
ALL UNITS WILL TRIGGER AT ANY VOLTAGE
ANO CURRENT WITHIN THIS AREA

5-

ffi

I
I
I
I

0.2

a:
a:

..

'-'
~

90

~

'-'

I

I

0:

105

a:

:::J

MAXIMUM ALLOWABLE
GATE POWER
PGM = 5 WATTS

2.0

'",.;
-'"

85

0.1

I

I
L

.05

BO
75

•

.02
70
65
0

10

15

20

25

o

1

2

FORWARD~

I~

3
5
7
VGT, GATE VOLTAGE (VOLTS)

MOTOROLA THYRISTOR DEVICE DATA
3-17

__________ _

MAXIMUM ALLOWABLE
GATE VOLTAGE 10 VOLTS

.0001~
0.3

IT(AV), AVERAGE FORWARD CURRENT (AMP)

TYPICAL
TRIGGER
POINT

[

40mA MINIMUM
GATE CURRENT REaUIRED
TO TRIGGfR ALL UNITS.
(1250 C-25mA)
(-65 0 C - 80 mAl

9

10

2N2574 thru 2N2579. MCR649AP1 thru MCR649AP10
FIGURE 3 - ON-8TATE CHARACTERISTICS

FIGURE 4 - MAXIMUM ALLOWABLE NON·RECURRENT
SURGE CURREII'T
~ 300

100

I

~

I

....
Z

/

0:

J

Ii;

~ 10

:::>
u

r'...

u

.~

V .P

~

~ 250

/

/1

:Ii
~zo _TYPICAL

'"

MAXIMUM -

~

I I

rg
iii
z

2.0

~

...............

...

III

I

-----

" 'II

~ 0.5
!!

I-

~

I
I

~ 1.0

CYCLE

. . . . . . r---_

! 200
...>

I

Q

K-:-ll

0:

Q

O

~ 150

TJ·1250 C TJ' 250 C

""><
~

100
10

,

I

,
I

O. 1

40

20

60

FIGURE 6 - EFFECT OF TEMPERATURE ON
TYPICAL GATE CURRENT
20

: I
2.5

0.5
1.0
1.5
2.0
VT.INSTANTANEOUS FORWARO ON VOLTAGE (VOLTSI

0.0

1 I'--. ...........

OF~-STAT~ VOLT~GE = j V

I-

::i

FIGURE 5 - EFFECT OF TEMPERATURE ON
TYPICAL HOLDING CURRENT

10

0::
0::

.........

......

::>

~ 1.0
w

20

...........

to

...........

1 10
I-

...z

...~

OF~-STAT~ VOL~AGE = ~ V

r--..... b-....

...........
5.0

...... ~

w

r--.....

~

to

~3.0

'"

~ 7.0
u

....
o

....

%

CYCLES AHO Hz

0.2

'"~

r-.. r-..

~

1

.~

•

SURGE IS PRECEDED AND
FOLLDWED BY RATED
CURRENT AND VOLTAGE.

I ""

r'LJ'L

I-

......

2.0
.f0

........

5.0

-40

-20

I"---..

%

0
20
40
60
80
TJ. JUNCTION TEMPERATURE (OCI

100

120

140

FIGURE 8 - MAXIMUM TRANSIENT THERMAL
RESISTANCE JUNCTION TO CASE

j
3.0
1.6
2.0
.f0

-40

-20

0
20
40
60
80
TJ.JUNCTION TEMPERATURE (OCI

100

120

1.4

~

0.9

~

I

..........

~ 0.8

..........

...

~

~ 0.7

~

~

!!? 1.0
W
'"
0:

....

...""

:--

0:
%

lI-

..........
..........

0.6

iii:
:;; 0.5

...inz

.........

""

0:

I-

1111111111 III

-40

1111111

-20

7 II!!

/

.......

20
40
60
80
100
TJ. JUNCTION TEMPERATURE (OCI

0.4

/

;
;:-

0.2

'So 0.4
>
0.3
-60

J

0.6

z

~

~

V

::& 0.8

..........

0:

I/

'"
z

I

OFF-STATE VOLTAGE = 7 V -

..........

/

~
~ 1.2

FIGURE 7 - EFFECT OF TEMPERATURE ON
TYPICAL GATE VOLTAGE
1.0

~

140

120

140

.1 ••tJll • •'n.....I1I

PEAK ALLOWABLE DISSIPATION
IN RECTIFIER FDR TIME 1
EQUALS maC (MAX. TJI
MINUS MEASURED CAST TEMP••
DIVIDED BY THE TRANSIENT
THERMAL RESISTANCE.
TJ(mo)-TC Ppaak"---

V
~

0.0
.001

.002

I
.005

.111 1111_1 iii

MOTOROLA THYRISTOR DEVICE DATA
3-18

CURVE DEFINES TEMP. RISE
OF JUNCTION ABOVE CASE
FOR SINGLE LOAD PULSE OF
DURATION I.

.01

.02
.05
I. TIME(s)

2'mm

0.1

"hi
0.2

I
0.5

1.0

2N2646
2N2647

PN Unijunction Transistors
Silicon PN Unijunction Transistors
· .. designed for use in pulse and timing circuits, sensing circuits and thyristor
trigger circuits. These devices feature:
• Low Peak Point Current - 2 pA (Max)
• Low Emitter Reverse Current - 200 nA (Max)
• Passivated Surface for Reliability and Uniformity

PN UJTs

!
CASE 22A-01
STYLE 1

-MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Rating

Power Dissipation, Note 1
RMS Emitter Current
Peak Pulse Emitter Current, Note 2
Emitter Reverse Voltage
Interbase Voltage
Operating Junction Temperature Range
Storage Temperature Range

Symbol

Value

Unit

Po

300

mW

IE(RMS)

50

mA

iE

2

Amps

VB2E

30

Volts

VB2B1

35

Volts

TJ

-65 to +125

°C

Tstg

-65 to + 150

°C

•

'Indicates JEDEC Registered Data.
Notes: 1. Derate 3 mWrC increase in ambient temperature. The total power dissipation (available power to Emitter and Base·Two) must be limited by
the external circuitry.

2. Capacitor discharge -

10 /LF or less. 30 volts or less.

~~~~k!M~~.~~~"~~~~~

_ _ _ _ _ _ _ _ _ _ _ __

MOTOROLA THYRISTOR DEVICE DATA
3-19

2N2646 • 2N2647
*ELECTRICAL CHARACTERISTICS (TA

=

25'C unless otherwise noted.)
Min

Typ

Max

0.56
0.68

-

0.75
0.82

rBB

4.7

7

9.1

k ohms

arBB

0.1

-

0.9

%rC

Emitter Saturation Voltage
(VB2Bl = 10 V, IE = 50 mAl, Note 2

VEB1(sat)

-

3.5

-

Volts

Modulated Interbase Current
(VB2Bl = 10 V, IE = 50 mAl

IB2(mod)

-

15

-

mA

-

0.005
0.005

12
0.2

-

1
1

5
2

4
8

6
10

-

3
6

5
7

-

Symbol

Characteristic
Intrinsic Standoff Ratio
(VB2Bl = 10 V), Note 1

1/

2N2646
2N2647

Interbase Resistance
(VB2Bl = 3 V, IE = 0)
Interbase Resistance Temperature Coefficient
(VB2Bl = 3V, IE = 0, TA = -55'Cto +125'C)

Emitter Reverse Current
(VB2E = 30 V, IBl = 0)

IEB20
2N2646
2N2647

Peak Point Emitter Current
(VB2Bl = 25 V)
Valley Point Current
(VB2Bl = 20 V, RB2

-

p.A

p.A

Ip
2N2646
2N2647
IV

=

2N2646
2N2647

100 ohms), Note 2

Base-One Peak Pulse Voltage
(Note 3, Figure 3)

Unit

VOBl
2N2646
2N2647

mA

18
Volts

"Indicates JEDEC Registered Data.

•

Notes:
1. Intrinsic standoff ratio,
~, is defined by equation:

2. Use pulse techniques: PW = 300 /LS, duty cycle" 2% to avoid
internal heating due to interbase modulation which may result in
erroneous readings.
3. Base-One Peak Pulse Voltage is measured in circuit of Figure 3. This
specification is used to ensure minimum pulse amplitude for
applications in SCR firing circuits and other types of pulse circuits.

Vp - VF
~=---

VB2Bl
Where Vp = Peak Point Emitter Voltage
VB2Bl = Interbase Voltage
VF = Emitter to Base-One Junction Diode Drop
(= 0.45 V @ 10 pAl

FIGURE I

FIGURE2

UNIJUNCTION TRANSISTOR SYMBOL
AND NOMENCLATURE

STATIC EMITTER CHARACTERISTIC
CURVES

-

FIGURE 3 - VOBI TEST CIRCUIT
(Typical Relaxation Oscillator)

(Exaggerated to Show Details)

Ve

182

v,

Negative

Cutoff
Region

Resistance -.,.. Saturation
Region

Region

+20 V

Vp

Ie

8,
ve81(sat)

Vv

-i-t~--------L-----~~

-

IV

Ie

leo

MOTOROLA THYRISTOR DEVICE DATA
3-20

2N3870

thru

Silicon Controlled
Rectifiers

2N3873
2N3896

Reverse Blocking Triode Thyristors
· .. designed for industrial and consumer applications such as power supplies;
battery chargers; temperature, motor, light and welder controls.
• Economical for a Wide Range of Uses
• High Surge Current - ITSM = 350 Amp
• Practical Level Triggering and Holding Characteristics 4 and 5.2 mA (Typ) @ TC = 25°C
• Rugged Construction in Either Pressfit, Stud or Isolated Stud Package

thru
2N3899
2N6171

thru
2N6174
seRs
35 AMPERES RMS
100 thru SOO VOLTS

MAXIMUM RATINGS (TC = 100°C unless otherwise noted.)
Rating

Symbol

Value

Unit

-Peak Repetitive Forward or Reverse Blocking
Voltage, Note 1
(TJ = -40 to + 100"C, 1/2 Sine Wave,
50 to 400 Hz, Gate Open)
2N3870,2N389S,2NS171
2N3871, 2N3897, 2NS172
2N3872,2N3898,2NS173
2N3873,2N3899,2NS174

VRRM
or
VORM

*Peak Non-Repetitive Forward or Reverse Blocking
Voltage (t .. 5 ms)
2N3870, 2N389S, 2NS171
2N3871, 2N3897, 2NS172
2N3872, 2N3898, 2NS173
2N3873,2N3899,2NS174

VRSM
or
VOSM

-Average On-State Current, Note 2
(TC = -40 to +S5"C)
(TC = + 85"C)

IT(AV)

*Peak Non-Repetitive Surge Current
(One cycle, SO Hz) (TC = +S5°C)

ITSM

350

Amps

12t

510

A 2s

Volts

~~

G

OK

100
200
400
SOO
Volts
CASE 174-04
(TO-203)
STYLE 1
2N3870 thru 2N3873

150
330
SSO
700
Amps
22
11

Circuit Fusing
(TC = -40 to + 100"C)
(t = 1 to 8.30 ms)

AO

• Indicates JEDEC Registered Data.
Notes: 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to
the gate concurrently with a negative potential on the anode. Devices should not be tested with a
constant current source for forward or reverse blocking capability such that the voltage applied

exceeds the rated blocking voltage.
2. Isolated stud devices must be derated an additional 10 percent.

MOTOROLA THYRISTOR DEVICE DATA
3-21

\~E"~

STYLE 1
2N3896 thru 2N3899

~
~ ~"n..,

STYLE 1
(Stud Isolated)
2N6171 thru 2N6174

2N3870 thru 2N3873. 2N3896 thru 2N3899. 2N6171 thru 2N6174
MAXIMUM RATINGS (TC

= 1000C unless otherwise noted.)

Rating

Symbol

*Peak Gate Power

Value

Unit
Watts

PGM

20

PG(AV)

0.5

Watt

*Peak Forward Gate Current

IGM

2

Amps

Peak Gate Voltage

VGM

*Average Gate Power

*Operating Junction Temperature Range
*Storage Temperature Range

10

Volts

TJ

-40 to

+ 100

Tstg

-40 to

+ 150

-

30

Symbol

Max

Stud Torque

·C
·C
in. lb.

"Indicates JEDEC Registered Data.

-THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
2N3870 thru 2N3873, 2N3896 thru 2N3899
2N6171 thru 2N6174

Unit

·CIW

R8JC
0.9
1

" Indicates JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS (TC

= 25·C unless otherwise noted.)

Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open, TJ = 100·C)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873,2N3899,2N6174
(Rated VORM or VRRM, gate open, TJ = 25·C)
All Devices

Min

Typ

Max

-

*Peak On-State Voltage
(lTM = 69 A Peak)

Unit
mA

IORM,IRRM

VTM

.

1
1
1
1

-

-

2
2.5
3
4
10

-

1.5

1.85

Volts

-

9
4

80
40

mA

-

0.9
0.69

3
1.6

Volts

-

p.A

*Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 24 ohms)

*TC = -40·C
TC = 25·C

IGT

*Gate Trigger Voltage (Continuous dc)
(YO = q2 V, RL = 24 ohms)

*TC = -400C
TC = 25·C

VGT

*Holding Current (Gate Open)
(VO = 12 V, ITM = 200 mAl

*TC = -40·C
TC = 25·C

'H

-

14
5.2

90
50

mA

*Gate Controlled Turn-On TIme (td + t r )
(lTM = 41 Adc, Vo = rated VORM,
IGT = 40 mAdc, Rise TIme'" 0.05p,s, Pulse Width = 10 p,s)

tgt

-

-

1.5

p,s

Circuit Commutated Turn-Off Time
(lTM = 10A, IR = 10A)
(lTM = 10 A, IR = 10 A, TC = 1000C)

tq

-

-

25
35

-

-

-

50

-

dv/dt

Forward Voltage Application Rate
(TC = 1000C, Vo = Rated VORM)
"Indicates JEDEC Registered Data.

MOTOROLA THYRISTOR DEVICE DATA
3-22

p,s

V/p,s

2N3870 thru 2N3873. 2N3896 thru 2N3899. 2N6171 thru 2N6174
FIGURE 1 - AVERAGE CURRENT DERATING

FIGURE 2 - ON-STATE POWER DISSIPATION

Typos 2N6171 thru 2N6174 must b, derated
In additionellO%. For example, in Figure 1,
tho mIX TC at 20 A (1BOO Conduction) i. 700 C.
N!I..,----+ a d"ating of 300 C. Tho. types must be
derated 330 C; tho"'orl. the allowable TC Imax)
I----+--'......~~"'d- is 670 C.

,---l---l-

i

TJ'100 0 C-+--+---+--+---+"'£...

+-_+

401--_-+_ _

rr:

~ 30

...
w

:'"w

~I----+-~~~~~~+---+-

:c
:>
...
0::

~~~-+--_+--+-

15

10

300

500

TJ~250C

0

w

rr:
rr:

:::>
<..>

0

o

:::>
'"
o

~

~

Z

~

a:
:IE
~
rr:

a:

:::>
<..>
w

'"
...'"
~
a:

r-

'"

f

f--I/l CYCLE

I

I I
2.0

I

3.0

5.0

7.0

5.0

3. 0

2.0

1.0

o. 7
0.5

1.0

1.4

1.B

2.2

2.6

3.0

3.4

3.8

4.2

4.6

VTM. MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

MOTOROLA THYRISTOR DEVICE DATA
3-23

r- 1--

"""I

10

0.3
0.6

-

I I I IIIII

~

.~

1 T IJJ

TJ = -40 to +1000 C
1=60Hz

100 f - - f L Y " L
SURGE IS PRECEOED ANO FOLLOWEO
BY ~AT~D CU~RE~T ~N~ ~OmGE
70
50
1.0

{f

--l
1--

200

i;l

/I

0

300

I-

Z
W

V

w

~
z

~V

,

0

:IE
~

IZ

.......... -:::::: ~

h-~OOC

100

40

35

25

FIGURE 4 - MAXIMUM NON· REPETITIVE
SURGE CURRENT

FIGURE 3 -ON-STATE
CHARACTERISTICS

200

~f-

CONDUCTION ANGLE

ITIAV). AVERAGE ON-sTATE CURRENT lAMP)

IT(AV). AVERAGE ON-sTATE CURRENT (AMP)

a:

20

0=

7.0 10
20
NUMBER OF CYCLES

30

50

70

lOa

2N3870 thru 2N3873. 2N3896 thru 2N3899. 2N6171 thru 2N6174
FIGURE 5 - TYPICAL THERMAL RESPONSE

1.0.mmlmllm~em~

0.7
0.5

L-

PRESSFIT PACKAGE .....

...JC
""W
:;;!:::i
=...J
W""
:1::;
1-=
1-0

0.3
0.2

1-+++H--+_+-+~~"""""l-bIi-H"-.==-Jr;O PACKAG E+-I-+-++I----+-+-~>_+++~~+_+__+___l_I_I_+_I_l_l___+__l__I_~

O. I

~~

~~ 0.0 1
:! "" 0.05

1-1;;

2~ 0.0 3
~=

0.0 2

~L..L..LJ':-.1-..:I.,.---J...-I-LL...U...u....--L--:!----L-~L..J....L.Ll.JL---J...-I_J...-I......LIL.JILl..u....I--L-~......L....I........I....L.I...L.LJ._L...l--iL.I.....J

0.01
0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0 k

2.0 k

5.0 k

t, TIME 1m,)

FIGURE 7 - GATE TRIGGER CURRENT

FIGURE 6 - PULSE TRIGGER CURRENT
100
70
50

1
Ii< 30
~

20

u
w

10

=
=>

•

~

2.0
OFF·STATE VOLTAGE 12V=
Rl 2~
-

" t\

............

\.

~

..

7.0
~ 5.0

.....

...'" 3.0
w

'"

.- 2.0

I
1.0
0.2

.-+t

IHt

-'

III

I

I

TJ = -40oC

-

,

250 C_

7.0

'"
:=

5.0

t-...

~

'"

,t; 3.0

I

1111

~

f.--

10

50

20

-100

2.0
·60

200

-40

40

20

...

;: 10

........

o
>

0.6

120

140

RV 24!l

;;(
E

.............

'"~

100

O~.sTATIE VOl~AGE = \2 V

,J

OFF1TATE lOLTA1GE = V Rl = 24 n

o
~ 0.8

80

FIGURE 9 - HOLDING CURRENT

FIGURE 8 - GATE TRIGGER VOLTAGE
iii
~

60

.......

TJ, JUNCTION TEMPERATURE IOC)

1.0

...........

i:'i

...........

'"'"ii:

=

t-...

'" 7. 0
B

.........

'"
z
§

...........
...........

I-

~

20

-20

PULSE WIDTH 1m,)

ffi

.......

"'"""'-r":~

w

5.0

2.0

~

'-

!;;:

IIII
1.0

10

~

T

I
0.5

~

=
=>
'-'

OFF~TATlVOlTIGE = 11V

Rl=24n-

z

III

=

1....

......

5.0

........

~

r-......

0.4

'"

3.0

'"

!:
0.2
-60

-40

-20

20

40

60

80

100

120

140

2. 0
·60

-40

m

-20

40

~

00

100

1m

140

TJ, JUNCTION TEMPERATURE IOC)

TJ, JUNCTION TEMPERATURE IOC)

.. tm . . .m]f7~IIID"'BI'iUiQ' '. . . .!lI.lill!'l'3
MOTOROLA THYRISTOR DEVICE DATA
3-24

E''SSI!III

IFJ~

2N3980

PN Unijunction Transistor
Silicon Annular PN Unijunction Transistor
· .. designed for military and industrial use in pulse, timing, sensing, and oscillator
circuits. These devices feature:
•
•
•
•

Low Peak Point Current - 2 pA max
Fast Switching - to 1 MHz
Low Emitter Reverse Current - 10 nA max
Passivated Surface for Reliability and Uniformity

MAXIMUM RATINGS (TA

=

PN UJTs

25°C unless otherwise noted.)
Symbol

Value

Unit

RMS Power Dissipation, Note 1

PD

360

mW

RMS Emitter Current

Ie

50

mA
Amp

Rating

Peak Pulse Emitter Current, Note 2
Emitter Reverse Voltage
Interbase Voltage
Storage Temperature Range

ie

1

VB2E

30

Volts

VB2B1

35

Volts

Tstg

-65 to +200

°C

CASE 22A·01
STYLE 1

Notes: 1. Derate 2.4 mWfC increase in ambient temperature. Total power dissipation (available power to
Emitter and Base·Two) must be limited by the external circuitry.
2. Capacitance discharge current must tall to 0.37 Amp within 3 ms and PRR '" 10 PPS.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol

Min

Intrinsic Standoff Ratio
(VB2B1 = 10 V) Note 1

'1/

0.68

Interbase Resistance
(VB2B1 = 3 V, IE = 0)

RBB

4

aRBB

0.4

-

Emitter Saturation Voltage
(VB2B1 = 10 V, IE = 50 mAl Note 2

VEB1(sat)

-

Modulated Interbase Current
(VB2B1 = 10 V, IE = 50 mAl

IB2(mod)

Characteristic

Interbase Resistance Temperature Coefficient
(VB2B1 = 3 V, IE = 0, TA = -65°C to + 100°C)

Emitter Reverse Current
(VB2E = 30 V, IB1 = 0)
(VB2E = 30 V, IB1 = 0, TA = 125°C)

IEB20

Peak Point Emitter Current
(VB2B1 = 25 V)

Ip

Typ

Max

Unit

0.82

-

8

kohms

0.9

%l"C

2.5

3

Volts

12

15

-

mA

-

5

-

10
1

pA

-

0.6

2

pA

6

•

nA

(cont.)
Notes:
1. Intrinsic standoff ratio,
'I, is defined by equation:
'I

=

2. Use pulse techniques: PW = 300 ,.s duty cycle", 2% to avoid
internal heating due to interbase modulation which may result in
erroneous readings.

Vp - (VEB1)

VB2B1
Where Vp = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
VF = Emitter to Base-One Junction Diode Drop
(0.45 V@ 10 ,.A)

~J:rt~~~~f!]~,[bt'.(~;

~&t4!flg~,.La• •f;I.lI.fi~~alll• • •R1~,j.

MOTOROLA THYRISTOR DEVICE DATA

3·25

2N3980
ELECTRICAL CHARACTERISTICS - continued (TA

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

IV

1

4

10

mA

Base-One Peak Pulse Voltage
(Note 1, Figure 3)

VOBl

6

8

-

Volts

Maximum Oscillation Frequency
(Figure 4)

t(max)

1

1.25

-

MHz

Valley Point Current
(VB2Bl = 20 V, RB2

= 100 ohms) Note 2

Notes:
1. Base·One Peak Pulse Voltage is measured in circuit of Figure 3.
This specification is used to ensure minimum pulse amplitude
for applications in ACR firing circuits and other types of pulse
circuits.

2. Use pulse techniques: PW = 300 ,... duty cycle .. 2% to avoid
internal heating due to interbase modulation which may result in
erroneous readings.

FIGURE 1 - UNIJUNCTION
TRANSISTOR
SYMBOL AND
NOMENCLATURE

FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES
(Exaggerated to Show Details)

VE
CUTOFF
REGION

NEGATIVE
RESISTANCE SATURATION
I-REGION-I- REGION

I

Vp

I

I
I
I
I

IE

•

EMITTER TO
SASE-I

E

VESI

VS2S1

(sat)

Vv
-+~~------~----~IE

lEO

FIGURE 3 - VOBl
TEST CIRCUIT
(Typical Relaxation Oscillator)

FIGURE 4 - f(max) MAXIMUM
FREQUENCY TEST CIRCUIT

+20 V

+20 V

RS2

loon

RI

RS2

50 kn

loon

CI

CI
0.21'F

o to 0.1

I'F TO
FREQUENCY
COUNTER

MOTOROLA THYRISTOR DEVICE DATA
3-26

2N4168
thru
2N4174
2N4184
thru
2N4190

Silicon Controlled
Rectifiers
Reverse Blocking Triode Thyristor
• •• mUlti-purpose PNPN silicon controlled rectifiers suited for industrial, consumer,
arid military applications. Offered in a choice of space-saving, economical packages for mounting versatility.
• Uniform Low-Level Noise-Immune Gate Triggering -IGT = 10 mA (Typ) @
TC = 25°C
• Low Forward "On" Voltage - vT = 1 V (Typ) @ 5 Amp @ 25°C
• High Surge-Current Capability - ITSM = 100 Amp Peak
• Shorted Emitter Construction

SCRs"
8 AMPERES RMS
50 thru 600 VOLTS

.r""

AO

G
oK

MAXIMUM RATINGS (Apply over operating temperature range and for all case types
unless otherwise noted.)
Rating

Symbol

*Peak Repetitive Forward and Reverse Blocking
2N4168,84,
Voltage, Note 1
2N4169,85,
2N4170, 86,
2N4172,88,
2N4174,90
Forward Current RMS
*Peak Forward Surge Current
(One cycle, 60 Hz, TJ = -40 to + 100°C)
Circuit Fusing
(TJ = -40 to +100°C;t<;; 8.3 ms)
*Peak Gate Power
'Average Gate Power

VDRM
or
VRRM

Value

Unit
Volts

50
100
200
400
600

~\\\\

IT(RMS)

8

Amps

ITSM

100

Amps

12t

40

A 2s

PGM

5

Watts

PG(AV)

0.5

Watt

'Peak Gate Current

IGM

2

Amps

Peak Gate Voltage, Note 2

VGM

10

Volts

TJ

-40 to +100

°C

Tstg

-40 to +150

°C

15

in. lb.

*Operating Temperature Range
'Storage Temperature Range
Stud Torque

~
"

CASE 86-01
STYLE 1
2N4168 thru 2N4174

~

•

CASE 87L-02
STYLE 1
2N4184 thru 2N4190

'Indicates JEDEC Registered Data.
Notes: 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
2. Devices should not be operated with a positive bias applied to the gate concurrently with a

negative potential applied to the anode .

..

~~~~~~~m~j~·~~""~~HD~fia""BE.
MOTOROLA THYRISTOR DEVICE DATA
3-27

2N4168 thru 2N4174 • 2N4184 thru 2N4190
THERMAL CHARACTERISTICS
Symbol

Typ

Max

Unit

Thermal Resistance, Junction to Case

Characteristic

R8JC

1.5

2.5.*

.C/W

Thermal Resistance, Case to Ambient
(See Figure 11) 2N4183-98

R/JCA

50

-

.C/W

"Indicates JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25·C
TJ = 100·C

IGT

Gate Trigger Voltage (Continuous dc)
(Vo = 7 Vdc, RL = 1000)
"(VO = 7 Vdc, RL = 1000, TC = -40·C)
"(VO = 7 Vdc, RL = 1000, TJ = 100·C)

VGT

"Forward "On" Voltage (pulsed, 1 ms max, duty cycle .. 1%)
(lTM = 15.7 A)

VTM
IH

=

Turn-On Time (td + t r )
(lG = 20 mAdc, IF = 5 Adc, Vo

•

IORM,IRRM

Gate Trigger Current (Continuous dc), Note 1
(Vo = 7 Vdc, RL = 1000)
*(VO = 7 Vdc, RL = 1000, TC = -40°C)

Holding Current
(VO = 7 Vdc, gate open)
*(VO = 7 Vdc, gate open, TC

Turn-Off Time
(IF = 5 Adc, IR = 5 Adc)
(IF = 5 Adc, IR = 5 Adc, TJ
(dv/dt = 30 V/,.s)

Min

-40·C)
ton

= Rated VORM)

Typ

Max

Unit

10
2

p.A.
mA

-

-

-

10

30
60

-

0.75

0.2

-

1.5
2.5

-

1.4

2

-

10

-

30
60

1

-

-

15
25

-

-

50

-

-

mA

-

Volts
-

-

mA

toff

= 100°C, Vo = Rated VORM)

Forward Voltage Application Rate (Exponential)
(Gate open, TJ = 100·C, Vo = Rated VORM)

dv/dt

Volts

,.s
,.s

V/p.s

'Indicates JEDEC Registered Data
Note 1. For optimum operation, i.e. faster turn-on, lower switching losses, best di/dt capability, recommended IGT = 200 mA minimum.

TYPICAL TRIGGER CHARACTERISTICS
FIGURE 2 - CAPACITIVE DISCHARGE
TRIGGERING

FIGURE 1 - PULSE CURRENT
TRIGGERING

50

150
VD

=

'\.

7.0 Vd.

100
~ 20
o

70

1 50
~

z

w
~

..,=>

w

!;(
to
,.;

30

to

'"

!:P 10

~
o

-

t'...

>
a:
o

TJ= -55DC

.............

5.0

~cr

~

: -- W.
25°C

t:i 2.0

~

~

VA -

-

=

.J:'

=
=
-

0.1

0.2

-

r-

~ 1.0

7. 0
5.0

0.05

1v

=25°C
=7.0 Vdc

:;; 10

'\.

,,'\.

20

TJ
VD

'\

100°C

0.1

0.2

0.5

1.0

2.0

5.0

10

20

O. 5
200

50

500

1000 2000

I""·>-----PFcr.

two AVERAGE TRIGGER PULSE WIDTH (psi

5000

3-28

0.02

0.05

,,---eot-j

TRIGGER CAPACITANCE

. . .mll'll !I!IlIIII:IIF II 11111''''. . .IIIfIfIIII&1I: III'M'I [S. 5N !!RUII
MOTOROLA THYRISTOR DEVICE DATA

10.01

•.•
II

rr_l

!II •

2N4168 thru 2N4174 • 2N4184 thru 2N4190
CURRENT DERATING
FIGURE 4 - MAXIMUM AMBIENT
TEMPERATURE

FIGURE 3 - MAXIMUM CASE TEMPERATURE
100

100
90

~

~

.........

..~....

w

w
a::
a::
w

~
....

..
~

....

~

80

a::

=>

=>
80

~
....
....

75

:l:i

........
iii

70

::&

65

70
60
50
40
30
20
0

ITIAV).AVERAGE FORWARD CURRENT lAMP)

ITIAV). AVERAGE FORWARD CURR ENT lAMP)

FIGURE 5 - POWER DISSIPATION

FIGURE 6 - MAXIMUM SURGE CAPABILITY

~ 100
!!
I~ I"--..

...

a::

~

~

~
~cn

'"a:

«
~

~z

: ~
~iii

f'

~

~ S6.01-----+---+---Tt-/-¥--r'-f-~~
wo

0

a:
a:

s~~lg~ETROA~~~".:T

r--.

0

~

4.01---+--+¥-F---if<~-+---+­

w

i

ct..c

z

Ii:

«
:I:

Z i"-

0

4

DEVICE IN FREE STILL AIR

w

:;;!!

~

T""r- bII
1"- !"--

r--':DEVICE
I I

20

~ a

...

8.0

2.0

10

3.0

5.0

ITIAV). AVERAGE FORWARD CURRENT lAMP)

J

)
RATED LOAD CONDITIONS
0
TJ = -40°C to +100 C ~
PULSE REPETITION
i'""""--~QUENCY = 60 Hz

I"'-r---.,
I"'r-..

10

20

30

~OUNTED ON

IHEATSINK

50

III

100

NUMBER OF CYCLES

FIGURE 7 - THERMAL RESPONSE

~
~ 2.0
w
....
z

-

l - - +--

MAlx

;5 1.0
~

::&

:ia::
w

~

...... ~ t::r-

~ O. 1

a::

-,:;0.05

U

-

........-::::: /

~ D.2

.
...

--

TYP

..... 0.5

-

,;:0.03
N
0.02

.....-

.....
0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

t. TIME Imsl

MOTOROLA THYRISTOR DEVICE DATA
3-29

100

200

500

1000

2000

•

2N4168 thru 2N4174 • 2N4184 thru 2N4190
FIGURE 8 - FORWARD VOLTAGE
£100
:E
~

70

lZ
w

50

~

30

w

20

TYP

C
w

MAX-

Z

II:

u

FIGURE 9 - HOLDING CURRENT
3.0

N

::;

.A?

VD

2.0

'"

:E

r- r-

II:

~z

o

~

1.0

~

5.0

~

3.0

z

IZ

w

::>
u
to

TJ= 1000 C

I

o

90
"i

I

1111
0.4

"
~

1.2

200

w

II:

'"
'"

::>
d

!:2

100

"'

1.6

2.0

2.4

2.8

3.2

3.6

-40

4.0

-20

20

""" ,

Units mounted In center _
of square sheet of liB· inch
thick bright copper. Heat sinks _
held vertically In stili Bir.

(Heat sink area

IS

•

20

2.0

+---

1\

t\.\

twice -

area of one side)

~

v:.
~

"'

I-

10
1.0

100

FIGURE" - CASE-TO-AMBIENT THERMAL RESISTANCE

50

;;;

'"w

80

60

II:

"

60

40

TJ, JUNCTION TEMPERATURE (DC)

W

'"'"z

.......

0.5

0.3

0.8

FIGURE 10 - TYPICAL THERMAL RESISTANCE OF PLATES

~

'""

0.7

lIT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

400

- -

--- r- r-.

z

//

~

1.0

II:
II:

Tr 25 0C

~ 2.0
~ 1.0

i'O

~~

/

10

0

/V

/

=7.0 Vdc

"'

~
10

5.0

10
15

o

TYPICAL TERMINAL
STRIP OR PRINTED
CIRCUIT BOARD MOUNTING
(CASE 87l)

L= 3/4"
I. = 1/4"

~

L = LEAD LENGTH -

.......:::::: ~

100

200

300

AIR FLOW, LINEAR FTIMIN

ROSA, THERMAL RESISTANCE (OCIW)

MOTOROLA THYRISTOR DEVICE DATA
3-30

400

500

2N4199
thru
2N4204

Designer's Data Sheet

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristor

SCRa

· .. fast switching, high-voltage Thyristors especially designed for pulse modulator
applications in radar and other similar equipment.

100 AMPERE PULSE
300 thru 800 VOLTS

•
•
•
•
•

Guaranteed Limits on All Critical Parameters
High-Voltage: VORM = 300 to 800 Volts
Maximum Turn-On Times Specified - 300 to 400 ns
Repetitive Pulse Current to 100 Amperes
Stable Switching Characteristics Over an Operating Temperature Range From
-6Sto +10SoC
• Pulse Repetition Rates as High as 20,000 pps
• JAN Versions Available

CASE 63-03
(TO-64)
STYLE 1

MAXIMUM RATINGS
Symbol

Value

Unit

= .105°C)

VRRM

50

Volts

2N4199
2N4200
2N4201
2N4202
2N4203
2N4204

VDRM

300
400
500
600
700
800

Volts

ITRM

100

Amps
Amps

Rating
Peak Reverse Blocking Voltage, Note 1 (TJ
*Peak Forward Blocking Voltage, Note 1
(TC = 105°C)

Repetitive Peak On-State Current
(PW = 3 /LS, Duty Cycle = 0.6%, TC
Continuous On-State Current (TC

=

=

85°C)

65°C)

Current Application Rate, Note 2
Peak Forward Gate Power
Average Forward Gate Power

5
5000

A/p,s

PGFM

20

Watts

PGF(AV)

1

Watt

IGFM

5

Amps

VGFM
VGRM

10
10

Volts

Peak Forward Gate Current
Peak Gate Voltage -

IT
di/dt

Forward
Reverse, Note 3

Operating Junction Temperature Range
Blocking State
Conducting State

TJ

Storage Temperature Range
Stud Torque

°c
-65 to + 105
-65 to +200

Tstg

-65 to +200

°c

-

15

in. lb.

*Indicates JEDEC Registered Data.
Notes: 1. Characterized for unilateral applications where reverse blocking capability is not important. Higher voltage units available upon request.
VDRM and VRRM may be applied as a continuous dc voltage for zero or negative gate voltage but positive gate voltage must not be applied
concurrently with a negative potential on the anode. When checking blocking capability, do not permit the applied voltage to exceed the

rated voltage.
2. Minimum Gate Trigger Pulse: iG = 200 mA. PW = 1 p.s, tr

= 20 ns.

3. Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes.

Design... Date for "Worat ease" CondItions - The Designers Data Sheets permit the design of most circuits entirely from the information presented.
Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

:.

';

MOTOROLA THYRISTOR DEVICE DATA

3-31

•

2N.4199 thru 2N4204
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

= 2S0C unless otherwise noted.)

Fig. No.

Symbol

*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 10SoC

17

IORM,IRRM

Gate Trigger Current (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 2S0C)
*(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -6S0C)

14

IGT

Gate Trigger Voltage (Continuous dc)
*(Anode Voltage", rated VORM, RL = 100 ohms, TC = 10S0C)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 2S0C)
*(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -6S0C)

12

*Holding Current
(Anode Voltage", 7 Vdc, gate open, TC = 105°C)

18

*Forward "On" Voltage
(lTM = S Adc, PW = 1 ms max, Outy cycle". 1%)
*Dynamic Forward "On" Voltage
(O.S p.s after 50% decay point on dynamic forward voltage waveform)
Forward Current: 30 A pulse
Gate Pulse: at 200 mA, PW = 1 p.s, tr = 20 ns

Characteristic

i.

•

*Turn-On Time
Delay Time
Rise Time

*Pulse Turn-Off Time
Test Conditions: PFN discharge; Forward Current = 30 A pulse;
Reverse Current = SA, TC = 8SoC, dvldt = 2S0 VII'S to Rated
VORM; Reverse anode voltage during turn-off interval = 0 V;
Reverse gate bias during turn-off interval = 6 V
*Forward Voltage Application Rate (Linear Rise of Voltage)
(TC = 10SoC, gate open, Vo = Rated VORM)

mA

-

-

SO
100

0.2

-

mA

Volts

1.S
2

IH

3

-

mA

8

VTM

2.6

-

Volts

7

VTM

-

2S

Volts

1,9
1,11

td
tr

200
200
lS0
130
100

2, 13

tq

-

20

p.s

16

dvldt

250

-

VII's

11111

MOTOROLA THYRISTOR DEVICE DATA
3-32

Unit

2

-

*JEDEC Registered Data.

III

Max

-

VGT

ITM = 30A
All types
2N4199 and 2N4200
2N4201
2N4202
2N4203 and 2N4204

Min

ns

2N4199 thru 2N4204
TEST CIRCUITS
FIGURE 2 - TURN-OFF TIME

FIGURE 1 - TURN-ON TIME

200 H (+)

PFN, Zo = 2.0 n

RE-APPLIED
FORWARD VOLTAGE,
dv/dt = 250 V
TO RATED VDRM

I,..

RS = 1.0

RC

n

= 2.0 n

-Two 1 N4937 fast-recovery diodes in series

each shunted by a 180 kU resistor.

FIGURE 3 - MAXIMUM ALLOWABLE FORWARD PULSE CURRENT

I-

~

""

10 0

a:
a:

......... -r-.

:::>

'-'
w

0

i.-

'"-'
12
5:
'"
~

lit = 500 A/PS M~X

0

.i

""

5. 0
1.0 ns

2.0

-....

4.0

10 ns

40

20

100 ns

200

400

4.0

~C=250C.

--

If

Dala iJ based upon a peak junction temperature 200 oC. Junction temperature
must be no higher than 105 0 C prior to application of forward blocking voltage.

""

0

.~

.........

I

Li

c
a:

~

.........

L-dl

40

r-r---

----

~~

100 pS

200

I""

1 ms

400

t, TIME OR PULSE WIDTH

FIGURE 4 - DERATING USING NO SWITCHING LOSSES
0: 100

'"

::£
I-

~
a:
a:

70

:::>

12

0

c

Data is based on

a:

~
a:

:::>

'"X

~
:oil 20
l:"

"' "- r"- r-..~ ~

maXi~

(Figure 8) atT J = 2000e and
data of Figure 6. Turn-on power
transients are neglected. The curves
indicate maximum capabilitv that

'"

""-

2.0

3.0

5.0

7.0

'"N

100
70 t--===- VAK

r=-

a:

:::>

'-'

2.0 kHz

~
12

50

yAK

TJ
Te

300 V
~ 800 V

-

... $~:t~_

I!!

a:

~

30

O.5j.tsJ /
15.0p.S-' /
10 j.tS

li~OkHZ' 10 kHz ~.OkHz

'"
:::>

20

'"X

. . . .
.1.111. 20j.ts./
Data IS indicatIVe of capability In typical
PFN circUits. Actual circuits should be
10 checked as indicated In the design note.
100
200
500
1k
2k

10

20

PW, PULSE WIDTH (ps)

'"
30

"


fi 0.02 _
~

--

~
......
;.".

~ 0.01 1 - -

.... ", ~O.OO

0.1,..

0.4

0.2

- ' . ~I"""

I--

~~

-

~

~

--

o liTYC1LE
STEADY STATE VALUES
DJC(~) = 30C/W MAX
OJC(~) = 20C/W TYP

i=

f=

t-

~

""0.005
0)= 0 (SINIGLE tU~SE)

1.0..

2.0

4.0

10..

20

40
100,.. 200
I, TIME DR PULSE WIDTH

1.0 ms

400

2.0

10 ms

4.0

20

100m.

40

FORWARD "ON"VOLTAGE DATA

FIGURE 7 - TYPICAL DYNAMIC FORWARD "ON" VOLTAGE

FIGURE 8 - MAXIMUM STEADY-8TATE

Ll .1

TJ=250C105 0C-

r::- Il 1/ II
1"-1 ',.//

rJ.!J..
II/V
IJJl

2000C-

•

0
0
0
0
0
O~~

o

0

(Time reference - 10% point of peak anode current. Value at specified time after reference point)

__~~__~~__~__~~__~~__~-=~~~~~~
100

200

300

400

SOD

600

700

800

1000

AT(t4) , I '000 (0.0205 + (. - 5.25' .0. 3 ) 0.27 + 5.25 •• 0.3 - 0.271
+ 700 [(1 - 7.75' .0. 3 ) 0.27 + 7.75' .0.3 - 0.2711 3 = 93.5. o C

II",

800

AT(tS) - [ 1000 [0.032 + (1 - 5.25' 10.3 ) 0.27 + 5.25 • 10.3 - 0.27 - 0.02051
+ 700 (0.025 + (1 - 7.75' .0. 3 ) 0.27 + 7.75 •• 0.3 - 0.27) I 3 = '05.6 o C

:: 60 0

~

I

I

I

I

a::

~

.:
~

~

I

in

1--11
400

0

p

I~~
pf\ r ...

I

I
0.5

FIGURE B - MORE ACCURATE MODEL

PI

r-

'-t..

20o ,

FIGURE A - SIMPLE MODEL

Ie

~

1 2 3 4 5 6 7 8 9 10 11 12
VF, FORWARO "ON"VOLTAGE (VOLTS)

vr, TRANSIENT FORWARD "ON" VOLTAGE (VOLTS)
DESIGN NOTE CONTINUED

~

0

~

12-

'-

/

ACTUAL PULSE

~ '~

!
!
1.0

r--- APPROXIMATION
~.

T"'-J
1.5

2.0
2.5 ,3.0
I,TIME(.&)

3.5

4.0

4.5

5.0

FIGURE C - AN ACTUAL TRANSIENT POWER PULSE

MOTOROLA THYRISTOR DEVICE DATA
3·34

2N4199 thru 2N4204
SWITCHING CHARACTERISTICS

TRIGGERING CHARACTERISTICS

FIGURE 9 - DELAY TIME

FIGURE 10 - TYPICAL PULSE TRIGGER CHARGE/CURRENT

500

200

I--r-.....

j'---.

w

:E

~

100

o

70

~
;9

I

I

-.....:..

w

'"«'"
'-'

r- l"- I--..

-

a

VAK = 7 V

~ 1a
:x:

1'-TYPICAL

100

100

I I

VAK = 400 V.ITM = 30 A0.1 pF CAPACITANCE l MAXIMUM DISCHARGE CIRCUIT
TJ = -65 TO +105 DC - f -

t---r-.

30a

!

I

I

IGT

a

"- '\,

a

N.

~
'"'"a: a

...

(rl~E TIME

20
70

50

'",.:

200

500

300

700

~~

>=
w

...'"z

~

100

'"~

-'

~

-

.........

.........

-65DC

70

-.....
---

'"
~

'"~

-

r-

I-

O. 8

--;;:

0.6

>

,..
~

0.2

['I

w

~ 10

......

--r-

..-

~ 7.0

'"=>
~
~

I-'
5.0 ~

....

~

a

~-

--.~~

I-~

-

j..-

..... ""'"

2.0
-60

-40

-20

-

.....

"-

.J,oo

....
-""'"

.-

40

.....
.."

60

,

•

.... TYPICAL

'r-~IMpM

1--

-- NON·TRIGGER REGION

o
-80

-60

-40

-20

20

40

60

80

100

120

TJ. JUNCTION TEMPERATURE (DC)

~ 7a
g
... 5a
i':l
'"
'"~ a
'"w
~ 2a
...'"w

L\"'R':VERSE GATE BIAS
- - OV
6V
j..-- ....RATE OF RE·APPLIED- •
1
[
[
VOLTAGE 400 V/psTO VDRM
1
REVERSE ANODE CURRENT = 5 A
FORWARD CURRENT FALL TIME < 200 ns
20

-~

VD = RATED VDRM

10a

~

::::: ,..,.. .....
.....
l- ~~ ::::: ::::: .......
;;....-

.... !AXIMUM

FIGURE 14 - DC GATE TRIGGER CURRENT

0
lOA

-I-..

~

FIGURE 13 - TYPICAL TURN-OFF TIME

3~A

I-..

-

-

~ 0.4

'"~

300
400
500 600 700 800
200
VAK. ANOOE·TO·CATHODE VOLTAGE (VOLTS)

ITM =60A

'",.:
!:

VAK=7V/

w

t--

50
100

!;;:

r-

~ 1.2
~ 1. 0

25 DC

1O~

PU LSE WI DTH (ps)

1.4

w

1

........

I--..

':;

R ;::K~

~

'"'"

-.

105DC

1. 6

DISC~ARG~

0.1
CAPAClTANCEI
IT = 5 TO 100 AMPS
(SEE FIG. 1 -IRL VARIED)

~ t;:::


20 '-'

FIGURE 12 - DC GATE TRIGGER VOLTAGE
1. 8

300

w

~ V-

/

1...

Ord inates are minimum values to cause triggering for a typical unit.
3
3
2.0 3.0
5.0
0.05 0.07 0.1
0.2
0.5 0.7 1.0

1000

FIGURE 11 - CURRENT RISE TIME

:E

V

25 DC

I)c

...... r--,

fJ
T.

~F

17

l'V
1-11'1
1/

I"J-.

w

IG. GATE CURRENT (mA)

r-....
~ 200

N

50

OGT

7

'"

Dr GAT~ TRIGGEr PULSf" 2r nS)1

100

.'"-"

!;;:1 a

r--

d

a

r--..

l...---

w

70

TJ - -65 DC

80

-

,.:

!:

100

TC. CASE TEMPERATURE (DC)

VAK=7V_

"""t--.
l ' ......
l ' ......

10

"

TYPICAL

" " ...... i"--i"--I-..

7
5
-80

-60

-40

-20

20

40

60

T J. JUNCTION TEMPERATURE (DC)

MOTOROLA THYRISTOR DEVICE DATA
3-35

--

S~AXIMUM

......

!;;:
'"

TTT

......

80

100

120

2N4199 thru 2N4204
~
o

FIGURE 16 - TYPICAL LINEAR dv/dt CAPABILITY

FIGURE 15 - TYPICAL BLOCKING VOLTAGE DERATING

~

4000

2.0

«
'"
~
o

~

GATE OPEN
TJ= 105°C

>

'"~

3000

VW
..,..10' ~

'"

~ 2000

1.0

~ /. V

o

<.:>

>

~

fil

0.7

1:1

a:

~

-- - -....
o

~ 0.3

~

~

~

a:

0.2

200

100

°l~>

>

300

500

100 1000

2000

3000

500

400
0.1

5000

.3
I-

ii'i
a:

0.3

w

I-

«

MAXIMUM

E
ii'i
a:

o

3

2
1
O. 5

~

GAT~ OPE~

30
20

a:

B

./
Ti PIC

'"z
§

10

/

~

-40

-20

20

40

SO

80

100

120

...-

V

~

........-

3.0

5.0

-

25°C

..----r

~L@TJ=1050C- r 1

...-

1

-ti;;;IMUM

'1

I

@~J = lOJOC- r--

FORWARO

+0.5

-2

-1

-3

-4

-5

VGK. GATE·TO·CATHODE VOLTAGE (VOLTS)

FIGURE 19 - TYPICAL ANODE-TO-CATHODE CAPACITANCE

FIGURE 20 - TYPICAL GATE-TO-CATHODE CAPACITANCE

50
~

~
~

240

~

w

w
<.:>

<.:>

TJ=250C

z

30

U

~

~ 20

"

z

«

I-

2N4204

U

~

~

~

r-.

w
1:1

o

w

180

:J::

I-

« 1S0
6

:;;
r-..

o
z

«

«

'"
<.:>
'"

'"

5
10

20

50

100

200

140

I-

......
500

1000

VAK.ANOOE·TO·CATHOOE VOLTAGE (VOLTS)

T/= 250C

200 ~

<.:>

10

1

220

0
0

r-... .... r---,

:J::

'"

f:: TYPICAL @TJ

V

~

i

TJ. JUNCTION TEMPERATURE (OC)

«
<.:>

2.0

/_L I-- REVERSE

-so

~
:;;oo

1.0

0
:J::

-;!;. I-'

0.2

~

/'

I-

~ 1~

E'

VAK=lVt==

10
50

50
20

0.1

FIGURE 18 - HOLDING CURRENT

a:

a

0.5

100

........-

200
100

V

VGK. GATE·TO·CATHOOE RIoVERSE VOLTAGE (VOLTS)

FIGURE 17 - FORWARD BLOCKING CURRENT
200 0
1000 =VO =VORM
500

V

105°C

0.2

dv/dt. LINEAR RATE OF APPLlEO VOLTAGE (VI",)

0

«

-, ,...

f-'

a:

V

25°C

w

!;( 100

ri

Li--""

::. 1000

r--.... t-

~

TJ = -S5 0 C ,...~

~

I'...

0.5

fr
fil
N

•

~ rt

r-JD=t~

w

120
100

\

'" ---- ...........

........

r-

-2

-4

-S

r--

-8

-10

VGK. GATE·TO·CATHOOE VOLTAGE (VOLTS)

&'
MOTOROLA THYRISTOR DEVICE DATA
3-36

2N4213
thru
2N4219

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristor
· .. all diffused PNPN devices designed for operation in mAljJA signal or detection
circuits.
•
•
•
•

Low-Level Gate Characteristics -IGT = 100 jJA Max @ 25°C
Low Holding Current - IHX = 3 mA Max @ 25°C
Anode Common To Case
Glass-to-Metal Bond for Maximum Hermetic Seal

SCRs
1.6 AMPERES RMS
50 thru 400 VOLTS

G

A O---I~Nv",---~O K

CASE 79-04
(TO-20SAD)
STYLE 3

*MAXIMUM RATINGS (TJ

=

125°C unless otherwise noted.)
Characteristic

Symbol

Peak Repetitive Forward and Reverse Blocking Voltage, Note 1
2N4213
2N4214
2N4216
2N4219
Forward Current RMS
(All Conduction Angles)
Peak Surge Current
(One Cycle, 60 Hz)
No Repetition until Thermal Equilibrium is Restored
Peak Gate Power -

Forward

Average Gate Power -

Forward

VDRM
or
VRRM

Rating

Unit
Volts

50
100
200
400

IT(RMS)

1.6

Amps

ITSM

15

Amps

PGFM

0.1

Watt

PGF(AV)

0.Q1

Watt

Peak Gate Current -

Forward

IGFM

0.1

Amp

Peak Gate Voltage -

Forward
Reverse

VGFM
VGRM

6
6

Volts

TJ

-65 to + 125

°C

Tstg

-65 to + 150

°C

+230

°C

Operating Junction Temperature Range
Storage Temperature Range

-

Lead Solder Temperature
(>1/16" from case, 10 s max)
'Indicates JEDEC Registered Values.

Note 1. VDRM and VRRM can be applied for all types on a continuous de basis without incurring damage.

MOTOROLA THYRISTOR DEVICE DATA
3-37

I

2N4213 thru 2N4219
ELECTRICAL CHARACTERISTICS (TC

=

25°C unless otherwise noted, RGK = 1000 ohms.), Note 1

Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25°C
TJ = 125°C

VTM

Gate Trigger Current (Continuous dc), Note 2
(VO = 7 V, RL = 100 ohms)
(TC = 25°C)
(TC = -65°C)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 7 V, RL = 100 ohms, TC = 25°C)
*(VO = 7 V, RL = 100 ohms, TC = -65°C)
*(VO = Rated VORM, RL = 100 ohms, TJ = 125°C)

VGT

= 7 V)

Max

Unit

-

10
200

pA
pA

-

1.5

Volts

IORM,IRRM

*Forward "On" Voltage
(lTM = 1 Adc peak)

Holding Current (VO

Min

/L Adc

-

100
300

-

0.8
1

Volt

0.1

= 25°C
= -65°C

-

mA

IHX

3
7

Turn-On Time

ton

Turn-Off Time

toff

Circuit dependent,
consult manufacturer

TC
*TC

*Indicates JEDEC Registered Values.
Notes: 1. Thyristor devices shall not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied
exceeds the rated blocking voltage.
Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential applied to the anode.
2. RGK current is not included in measurement.

I

FIGURE 1 - CASE TEMPERATURE vs CURRENT

FIGURE 2 - AMBIENT TEMPERATURE vs CURRENT

~ 130

~140r----'-----r----'-----'----'-----r----,

"~

~"

120

it
~ 110

120

f-'III_--+----+----+-----l-- ~

~ 100

-jaI- -

~

5 100

;

"w

~

=

~ 60r---_1----~~~~~~~~_1----_+----~

"
~
"

90
80

~
<

x

70

~

..

"~

60 0

"
~

~

.."
..

80r---~--~~~~~----+_--~----_r--~

x

0.2

0.4
0.6
0.8
10
14
1.2
iT(AV), AVERAGE ON·STATE CURRENT (AMP)

1.6

40r---r---r-~~~~~--~~~--~
20r---~----_r--~~~~~~~----_+~--~

de

°O~--~O~I--~O~2~--~O.~3--~~-~~~--~0~.6--~O~.7·
iT(AV),AVERAGE ON STATE CURRENT (AMP)

RS~~~~~~,~'~~~~~'~~~~~~~~'b~~~~
MOTOROLA THYRISTOR DEVICE DATA

3-38

2N4441
thru
2N4444

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
· .. designed for high-volume consumer phase-control applications such as motor
speed, temperature, and light controls and for switching applications in ignition
and starting systems, voltage regulators, vending machines, and lamp drivers
requiring:
• Small, Rugged, Thermopad Construction - for Low Thermal Resistance, High
Heat Dissipation, and Durability
• Practical Level Triggering and Holding Characteristics @ 25°C
IGT = 7 mA (Typ)
IH = 6 mA (Typ)
• Low "On" Voltage - VTM = 1 Volt (Typ) @ 5 Amps @ 25°C
• High Surge Current Rating - ITSM = 80 Amps

seRs
8 AMPERES RMS
50 thru 600 VOLTS

~

AO

G

oK

A

,L
K

(TO-225AA)
STYLE 2

MAXIMUM RATINGS (TJ = 100°C unless otherwise noted.)
Symbol

Rating
Peak Repetitive Forward and Reverse Blocking Voltage, Note 1
2N4441
2N4442
2N4443
2N4444

VDRM
or
VRRM

*Non-Repetitive Peak Reverse Blocking Voltage
(t = 5 ms (max) duration)
2N4441
2N4442
2N4443
2N4444

VRSM

= 73°C

*Peak Non-Repetitive Surge Current
(1/2 cycle, 60 Hz preceded and followed by rated current and voltage)
Circuit Fusing
(TJ = -40 to + 100°C; t

=

Unit
Volts

50
200
400
600

•

Volts
75
300
500
700

*RMS On-State Current
(All Conduction Angles)
Average On-State Cu rrent, TC

Value

IT(RMS)

8

Amps

IT(AV)

5.1

Amps

ITSM

80

Amps

12t

25

A2s
Watts

1 to 8.3 ms)'

*Peak Gate Power

PGM

5

PG(AV)

0.5

Watt

*Peak Forward Gate Current

IGM

2

Amps

*Peak Reverse Gate Voltage

VRGM

tD

Volts

*Average Gate Power

'Indicates JEDEC Registered Data.
(cont.I
Note 1. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the
anode. When checking fOlWard or reverse blocking capability, thyristor devices should not be tested with a constant current source in a
manner that the voltage applied exceeds the rated blocking voltage.

·~l:HIIjf:J.L:'·l;it~;rt'"'::t!:rtJ'/J.~r:l~:!f·WNglllla~~lIIiilll'l~M~~~M~
MOTOROLA THYRISTOR DEVICE DATA
3-39

2N4441 thru 2N4444
MAXIMUM RATINGS -

continued (TJ

= 100°C unless otherwise noted.)

Rating

Symbol

Value

Unit

TJ

-40 to +100

°c

Tstg

-40 to +150

°c

-

8

in. lb.

*Operating Junction Temperature Range
*Storage Temperature Range
Mounting Torque (6-32 screw), Note 1
THERMAL CHARACTERISITCS

Symbol

Typ

Max

Unit

*Thermal Resistance, Junction to Case

ROJC

-

2.5

°CIW

Thermal Resistance, Junction to Ambient

R6JA

40

-

°CIW

Characteristic

ELECTRICAL CHARACTERISTICS (TC

= 25°C unless otherwise noted.)

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open)
Gate Trigger Current (Continuous dc)
(VO = 7 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VO = 7 Vdc, RL = 100 Ohms)
(VO = 7 Vdc, RL = 100 Ohms)
(VO = Rated VORM, RL = 100 Ohms)

Symbol
TJ
TJ

= 25°C
= 100°C

TC
*TC

= 25°C
= -40°C

TC
TC
TJ

= 25°C
= -40°C
= 100°C

Peak On-State Voltage
(Pulse Width = 1 to 2 ms, Duty Cycle .. 2%)

•

Min

Typ

Max

Unit

pA.
mA

-

-

10
2

-

7

30
60

-

0.75

1.5
2.5

mA

IGT

VGT

0.2

Volts

-

-

Volts

VTM

(lTM
*(lTM

-

= 5 A peak)
= 15.7 A peak)

Holding Current
(VO = 7 Vdc, gate open)

1

-

1.5
2
mA

IH
TC
*TC

Gate Controlled Turn-On Time
(lTM = 5 A, IGT = 20 mA, Vo

IORM,IRRM

= Rated VORM)

Circuit Com mutated Turn-Off Time
(lTM = 5 A, IR = 5 A)
(ITM = 5A, IR = 5A, TJ = 100°C)

= 25°C
= -40°C
tgt

-

-

6

40
70

-

1

-

-

15
20

-

50

-

tq

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM, Exponential Waveform,
TJ = 100°C, Gate Open)

dv/dt

I-'s
I-'s

-

V/!-'5

*Indicates JEDEC Registered Data.
Note 1. Torque rating applies with use of torque washer (Shakeproof WD19522 #6 or equivalent). Mounting torque in excess of 8 in. Ibs. does not
appreciably lower case-to·sink thermal resistance. Anode lead and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed

+ 225°C.

tJ:'~~!u:nt.r,tt~tr,1t~~~~~_a'.ItJ,:i7'
MOTOROLA THYRISTOR DEVICE DATA
3-40

2N4441 thru 2N4444
FIGURE 1 - ON-STATE CHARACTERISTICS

FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION

100

/

/

50

/
TJ

= 25 0 C

30

/;

0:-

a:

o

1/

5- 10
0t;5

~

/ /

// /

/. ~ /
~V

V

2.0

4.0

6.0

8.0

ITIAV), AVERAGE ON·STATE CURRENT lAMP)

f

u

./

180 0

6~.

=3010

/I

I

7.0

y

"CONDUCTION ANGLE 900

/

:I;

a:

VfOOOC

o

II

20

:::>

-~
-- jot -

./ . /

70

w

05.0
«
0-

"!

z

3.0

z

«

100~~'----.----r----r---'--~-----r---.

I

«

0-

FIGURE 3 - AVERAGE CURRENT DERATING

I

0

'":::>
£z

l~~

u
o

~_~

~G

2.0

~

'\ ~'"

""t:-

:1;'

1.0
0.7

0.3

!

1

0.5

"+-~t------I

"'\.,,

"

~__-+____t-__-r__-;18_00__-+___
""-f~~
d~

cO

I

o

70r-__

~

-l

-......,.", = CONDUCTION ANGLE

,'\.""
o = 30 0

_II

~

t--

60~__~__~~__~__~__~__~~__-+__~

2.0

1.0

3.0

40

o

50

20

4.0

6.0

InAV), AVERAGE ON·STATE CURRENT lAMP)

vTM, INSTANTANEOUS ON·STATE VOLTAGE IVOLTS)

8.0

•

FIGURE 4 - THERMAL RESPONSE
3.0

~

I I

2.0

!---

in

..-f-

~~

1.0
~ ~ O. 7

r

AX

TYPICAL

"'w

~ ~ O. 5
6~
~ ~ 0.3

.--:; ::,....-

~ ~ O. 2
u--'
2«

:::>:1;
....,

0::

f-"V

V
V

O. 1

-=~
U
..... 0.0 7
~ 0.05

0.03 .......
0.03 0.05

0.1

0.2

0.3

0,5 0.7 1.0

2.0

3.0

5.0 7.0 10
t,

20

30

50

70 100

TIME 1m,)

MOTOROLA THYRISTOR DEVICE DATA
3-41

200 300

500 700 1000

2000 3000

2N4441 thru 2N4444
FIGURE 5 - MAXIMUM NON·REPETITIVE SURGE CURRENT
100

a::

90

~

BO

'"

IZ

w
a:
a:

60

w
a:

50

'-'

to

~

...""
;:1i

~

!:"

--n --- -- - -

TJ=1000 C
t = 60 Hz f-t-

70

:::>

FIGURE 6 - TYPICAL HOLDING CURRENT
20

40

.\

I

30

<
.§
I-

t--

(\

\.

VD = )'0 Vdc
GATE OPEN

a:
a:

I- -I-

13

.......
...........

) 0

to

1 CYCLE

Z

§

I I

.............
...............

5.0

0
:I:

SURGE IS PRECEDED AND FOLLOWED
BY RATEDI CURREY ANDIVDL,AGj

20

I

10

~

--- r--.

:i
3.0

10

o
3.0

2.0

1.0

4.0

6.0

B.O

2.0
-40

10

FIGURE 7 - TYPICAL GATE TRIGGER CURRENT
VD =

~
a:
a:

10

j.O Vdc

VD = )'0 Vdc

w
to

•

o

..............

5. 0

>

-..........
..............

w

!;;:

t---"

O.B

"'
!;;:

0.6

r--

I-

--r--.

--.............

W

~

[-...

to

3.0
2.0
-40

a:

w
to
to

to

§

r--....

~

-........

to

'"~

1. 0

«

a: 7.0
w

,.:
to
>
-20

20

40

100

~
o

~

'-'

BO

FIGURE 8 - TYPICAL GATE TRIGGER VOLTAGE

r---...

:::>

60

1.2

;(
I-

40

TJ, JUNCTION TEMPERATURE (OC)

20

.§

20

-20

NUMBER OF CYCLES

----

60

BO

100

0.4
-40

20

-20

40

60

TJ,JUNCTION TEMPERATURE (OC)

TJ. JUNCTION TEMPERATU RE (OC)

MOTOROLA THYRISTOR DEVICE DATA
3-42

80

100

2N4851
thru
2N4853

PN Unijunction Transistors
Silicon Unijunction Transistor
· .. designed for pulse and timing circuits, sensing circuits, and thyristor trigger
circuits.
• Low Peak-Point Current - Ip = 0.4 pA Max
• Low Emitter Reverse Current - lEO = 50 nA Max
• Fast Switching

PN UJTs

CASE 22A-Ol
STYLE 1

-MAXIMUM RATINGS (TA = 25·C unless otherwise noted.)
Symbol

Value

Unit

RMS Power Dissipation, Note 1

PD

300

mW

RMS Emitter Current

Ie

50

mA

Peak-Pulse Emitter Current, Note 2

ie

1.5

Amp

Emitter Reverse Voltage

VB2E

30

Volts

Interbase Voltage, Note 3

VB2Bl

35

Volts

TJ

-65 to + 125

·C

Tstg

-65 to +200

·C

Rating

Operating Junction Temperature Range
Storage Temperature Range
'Indicates JEDEC Registered Data.
Notes: 1. Derate 3
increase in ambient temperature.
2. Duty cycle", 1%, PRR = (see Figure 6).
3. Based upon power dissipation at T A = 25°C.

mwrc

MOTOROLA THYRISTOR DEVICE DATA
3-43

2N4851 thru 2N4853
ELECTRICAL CHARACTERISTICS

(TA = 25'C unless otherwise noted.)

Rating
*Intrinsic Standoff Ratio, Note 1
(VB2B1 = 10 V)

Symbol

4,8

1/

Min

Typ

Max

0.56
0.70

0.75
0.85
9.1

kohms

Unit

-

11, 12

rBB

4.7

-

12

aBB

0.2

-

0.8

%l"C

Emitter Saturation Voltage, Note 2
(VB2B1 = 10 V, IE = 50 mAl

VEB1(sat)

-

2.5

-

Volts

Modulated Interbase Current
(VB2B1 = 10 V, IE = 50 mAl

IB2(mod)

-

15

-

mA

-

-

0.1
0.05

-

-

2
0.4

2
4
6

-

-

2N4851
2N4852,2N4853

*Interbase Resistance
(VB2B1 = 3 V, IE = 0)
*Interbase Resistance Temperature Coefficient
(VB2B1 = 3 V, IE = 0, TA = -65 to +125'C)

*Emitter Reverse Current
(VB2E = 30 V, IB1 = 0)
*Peak-Point Emitter Current
(VB2B1 = 25 V)
'Valley-Point Current, Note 2
(VB2B1 = 20 V, RB2 = 100 ohms)

*Base-One Peak Pulse Voltage

•

Fig. No.

7

IEB20

2N4851,2N4852
2N4853
9,10

Ip

2N4851 , 2N4852
2N4853

-

13,14

3,17

*Maximum Frequency of Oscillation

5

pA.

-

IV

2N4851
2N4852
2N4853
2N4851
2N4852
2N4853

pA.

3
5
6

VOBl

-

f(max)

-

mA

Volts

-

-

1.25

MHz

'Indicates JEDEC Registered Data.
Notes: 1,1/, Intrinsic standoff ratio, is defined in terms of the peak-point voltage, Vp, by means of the equation: Vp = 1/ VB2Bl + VF, where VF is
about 0.49 volt at 25'C @ IF = 10 /LA and decreases with temperature at about 2.5 mVI'C. The test circuit is shown in Figure 4. Components
Rl, Cl, and the UJT form a relaxation oscillator; the remaining circuitry serves as a peak-voltage detector. The forward drop of Diode 01
compensates for VF. To use, the "cal" button is pushed, and R3 is adjusted to make the current meter, Ml, read full scale. When the "cal"
button is released, the value of 1/ is read directly from the meter, if full scale on the meter reads 1.
2. Use pulse techniques: PW = 300 #LS, duty cycle

~

2% to avoid internal heating, which may result in erroneous readings.

FIGURE 1 - UNIJUNCTION
TRANSISTOR
SYMBOL AND NOMENCLATURE

FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES

CUTOFF
REGION

I_REGION _ _ SATURATION

REGION

Vp
EMITTER TO
BASE ONE
CHARACTERISTIC

E

\

VB2Bl
VBE1(sat)

Vv

Ip
lEO

MOTOROLA THYRISTOR DEVICE DATA
3-44

2N4851 thru 2N4853
FIGURE 4 - 11 TEST CIRCUIT

FIGURE 3 - VOBl
TEST CIRCUIT

+10 V

+20 V

CAL'1

RB2

loon

Cl
O.lIlF
Cl
0.21lF
1, 10llA FULL SCALE

t01. diode with the following
characteristics:
VF ~0.49 V@ IF ~ 10llA
IR'; 2.0 IlA@ VR ~ 20 V

FIGURE 6 - PRR TEST CIRCUIT
AND WAVEFORM

FIGURE 5 - f(max)
TEST CIRCUIT

DUTY CYCLE'; '%, PRR'; '0 pps

VI

+ 20 V
0.' 5

~:~==i=====t~--jr::

•

CURRENT WAVEFORM THRU R,

TO
FREQUENCY
COUNTER

20·30 V
(Adjust for
1.5A

151lF

peak in A,)

R,

0.' n
TYPICAL CHARACTERISTICS
FIGURE B -INTRINSIC STANDOFF RATIO

FIGURE 7 - EMITTER REVERSE CURRENT

1...
z
w

a:
a:

::>

'"
w
::;'"
>

w
a:

1. 0

0. 5
O. 2
O. 1

0.05

~

0.02

~

0.0 1

::::

~

sy

I

-

A

;::

:

..... ~

......o

~ "'"
-20

0.7

'"
u;
z

'/

r-- t--.

a;

...
~

-- -- -r--

z

~

IEB2

-40

o.Sr--.

o

./

~ 0.00 2 1

-60

o

/ ' 1/

ffi

ffi 0.00 1

VB2Bl· 10 V
SW OPEN FOR IEB20
SW CLOSEO FOR IEB2S

-

~ 0.0051

-

o.9

O. 6

t"-- r--

i--

40

60

80

100

120

O. 5
-60

140

TJ, JUNCTION TEMPERATURE IOC)

-

2N4SJ

-40

-20

20

40

60

80

TJ, JUNCTION TEMPERATURE (OCI

MOTOROLA THYRISTOR DEVICE DATA
3-45

-l-

I---

,;

20

2N4852, 2N4853

100

120

140

2N4851 thru 2N4853
PEAK POINT CURRENT
FIGURE 9 - EFFECT OF VOLTAGE

FIGURE 10 - EFFECT OF TEMPERATURE
1. 0

2. 5

TJ=25 0 C

.3
0

~

l\
1\ \
\ I,

5

0::
0::

""

5

~

......... t-

O.

I:
~
....

O.

~
~

9.0

12

15

18

21

24

27

-

2N4851.2N4852

"- ......... """-

O. 2

0
-60

30

r-- r--

4~

if

I

2N4853

-... '--

6 ..........

~

2N4851. 2N4852

................

0
6.0

ffi'"
z

r-.
3.0

o. 8

W

" " "-

0

VB2Bl = 25 V

;;

-40

2N4853

W

-20

W

M

M

100

lW

~

TJ. JUNCTION TEMPERATURE (DC)

VB2Blo INTERBASE VOLTAGE (VOLTS)

INTERBASE RESISTANCE
FIGURE 11 - EFFECT OF VOLTAGE

oW
N

::;

;i

FIGURE 12 - EFFECT OF TEMPERATURE

1.5

12

NORMALIZED @3.0 V
TJ = 25DC
1.4 IE = 0

~
w

0::

Z

1.3

~

w

CD

.........

0::

.

1. 1

CD

1. 0

o

3.0

6.0

9.0

8.0

'":i
w
....

6.0

0::

... V

!:

.;
CD

0::

..... V
.............

!:
0::

,

ili
0::
W

/'

1. 2

~

~

In

,/

~

12

15

10

z

<

V

w'

~

u

/

o

18

21

2N4853

VB2Bl = 3.0 V
IE = 0

24

27

4.0

/'

./

........ V

--'

2.0

30

V

.......::: ::::::+rr4852
.-'1"'"
2N4851

-40

-60

-20

20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE (DC)

VB2Blo INTERBASE VOLTAGE (VOLTS)

TYPICAL CHARACTERISTICS
VALLEY CURRENT
FIGURE 13 - EFFECT OF VOLTAGE

1
....
z
w

~

'"u

!z
~

16

TJ = 250 C
14 . RB2· 10011

VB2Bl = 20 V
14 -RB2=10011

12
10

6. 0

~

4. 0

2

274~ ..............

8.0

~

.....
.....

FIGURE 14 - EFFECT OF TEMPERATURE

16

......

~V

...

2. 0
0

~

:::: ~ ~ f...- ~2~4851

3.0

6.0

9.0

12

15

18

--

21

...

.-,...-

24

---

1

12

0::
0::

10

'"
!Z

8.0

C
>

6.0

!Z
w
u

-

...
w

:::l
~

:--....
r- r:::::: -...

-...

4.0

r-- -...

_2N4B53

::¥
2N14851'

:? 2.0
27

30

0
-60

r- r-.
r- ~ i==

-40

W

-20

W

r-- r--

M

M

TJ. JUNCTION TEMPERATURE (DC)

VB2Bl.INTERBASE VOLTAGE (VOLTS)

MOTOROLA THYRISTOR DEVICE DATA
3-46

~

r"

-I'
lW

~

2N4851 thru 2N4853
VALLEY VOLTAGE
FIGURE 15 - EFFECT OF VOLTAGE

FIGURE 16 - EFFECT OF TEMPERATURE

1.8

I.B

- --

TJ=25 DC

S 1.7
«

~

0

1.6

/

>

~«
>

,;

1.5

>

V'
1.4

o

30

/

80

~o

V

w
to

«

~

o

>
>-

1.4

r--

--..r-

j

/
90

1.6

~

./

~
w
to

~

V

V

0

TJ = 25DC
VB2BI = 10 V

---

-r-

«
:
>

12

15

18

21

24

27

'.2

1.0
-60

30

-40

W

~

-20

VB2BI, INTERBASE VOLTAGE (VOLTS)

~

M

100

1~

~

TJ, JUNCTION TEMPERATURE (DC)

FIGURE 17 - OUTPUT VOLTAGE
0;

~

20
RBI-lOon

o

~

w
to

0

~ 7. 0
5. 0
>
~ 3. Or": ...
i2 2. 0
o

""

~
~ 1. 0
z
c:;>
w

~

'"

....

-

..,,' ....0.002
0.001

;;i o. 3
o

.... ....-:

o. 7
O. 5

- -'

> O. 2

....

-

....
~
, .
.... 1-""

0.005

,.~'

-""'"

0.01

--- .-.-

on

.- .-

I-"r-"

---.-

1--1-

I--

.- ... -

-

loll "

_.

.- .- .-

~<:

--

0.02

--

(SEE FIGURE 3)
-V, = 20 V
RB2=10011
TA = 25DC
2N4851
- - 2N4852,2N4853
0.1

0.05

0.2

0.5

1.0

2.0

5.0

10

•

C" CIRCUIT CAPACITANCE, EMITTER TO GROUND ("F)

_ _M.!lOa·.........7.11.'_1111111• •11711111117_ _ _ _ __

.I~

MOTOROLA THYRISTOR DEVICE DATA
3-47

PN Unijunction Transistors

2N4870
2N4871

Silicon Unijunction Transistors
· .. designed for pulse and timing circuits, sensing circuits, and thyristor trigger
circuits. These devices feature:
•
•
•
•
•

Low Peak Point Current - 1 pA Typical
Low Emitter Reverse Current - 5 nA Typical
Passivated Surface for Reliability and Uniformity
One-Piece Injection-Molded Unibloc* Plastic Package for Economy and Reliability
High 11 for greater bandwidth

PN UJTs

~B2
\J1Bl

,~~

B2

CASE 29-04
STYLE 9

•

MAXIMUM RATINGS (TA

=

25' unless otherwise noted.)
Symbol

Value

Unit

RMS Power Dissipation, Note 1

PD

300

mW

RMS Emitter Current

Ie

50

mA

Peak-Pulse Emitter Current, Note 2

ie

1.5

Amp

Emitter Reverse Voltage

VB2E

30

Volts

Interbase Voltage, Note 3

VB2Bl

35

Volts

TJ

-55 to +125

'C

Tstg

-55to +150

'C

Rating

Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. Derate 3

mwrc increase in ambient temperature.

2. Duty cycle'" 1%, PRR = 10 PPS (see Figure 5).
3. Based upon power dissipation at TA = 25'C.

taa:8"~~IR!_iR.IiiI~~ihlttaliiHtlGJlitt.I_~;t;d:"".«
MOTOROLA THYRISTOR DEVICE DATA
3-48

2N4870 • 2N4871
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Intrinsic Standoff Ratio, Note 1
(VB2Bl = 10 V)

Fig. No.

Symbol

4, 7

1)

2N4870
2N4871

Interbase Resistance
(VB2Bl = 3 V, IE = 0)

Typ

Min
0.56
0.70

Max

Unit

-

-

0.75
0.85

6

9.1

kohms

-

0.90

%rC

10,11

RBB

4

11

aRBB

0.10

Emitter Saturation Voltage, Note 2
(VB2Bl = 10 V, IE = 50 mAl

VEB1(sat)

-

2.5

-

Volts

Modulated Interbase Current
(VB2Bl = 10 V, IE = 50 mAl

IB2(mod)

-

15

-

mA

Interbase Resistance Temperature Coefficient
(VB2Bl = 3 V, IE = 0, TA = -65 to +125"C)

Emitter Reverse Current
(VB2E = 30 V, IBl = 0)

6

IEB20

-

0.005

1

p.A

Peak-Point Emitter Current
(VB2Bl = 25 V)

8,9

Ip

-

1

5

p.A

12,13

IV
2
4

5
7

3
5

6
8

-

Valley-Point Current, Note 2
NB2Bl = 20 V, RB2 = 100 ohms)

2N4870
2N4871

Base-One Peak Pulse Voltage

2N4870
2N4871

3, 16

VOBl

mA

Volts

Notes: 1. 'I, Intrinsic standoff ratio, is defined in terms of the peak-point voltage, Vp, by means of the equation: Vp = 'I VB2B1 + VF. where VF is
about 0.49 volt at 25"C @ IF = 10 pA and decreases with temperature at about 2.5 mVrC. The test circuit is shown in Figure 4. Components
A1, C1, and the UJT form a relaxation oscillator; the remaining circuitry serves as a peak-voltage detector. The forward drop of Diode 01
compensates for VA. To use, the "cal" button is pushed, and R3 is adjusted to make the current meter, M1, read full scale. When the "cal"
button is released, the value of 'I is read directly from the meter, if full scale on the meter reads 1.
2. Use pulse techniques: PW

~

300 P-s, duty cycle

~

2% to avoid internal heating. which may result in erroneous readings.

FIGURE 1 - UNIJUNCTION
TRANSISTOR SYMBOL
AND NOMENCLATURE

FIGURE 2 -STATIC EMITTER
CHARACTERISTICS CURVES
vE

IB2

NEGATIVE

CUTOFF

~ESISTANCf

REGION
Vp

I-REGJON· II
I
I

SATURATION
REGION

I

E
VEBHsat)
Vv

I

I
:
EMITTER TO
I
BASE·1
:CHARACTERISTIC

:

I VALLEY \

~ _____ -lI_':.<:.INT

t-----I
I
I

I

I
I
I
I

-+~~------~----~IE

Ip

MOTOROLA THYRISTOR DEVICE DATA
3-49

2N4870 • 2N4871
FIGURE 4 -

FIGURE 3 - VOB1 TEST CIRCUIT

1]

TEST CIRCUIT

+10V

Vl
+20 V

CAL.~

Rl
10 kn

R2
910 kn

D,t

-E]l---

C2

vOBl

~

C1

C,

1.0 j.
u
~

a:

1.0

O. 5
O. 2

O. 1

~
w
a::

0.0 5

ffi

0.0 2

t:3ii

~
I

S~

-

-

0.0 1

FIGURE 7 - INTRINSIC STANDOFF RATIO
0.9

VB2Bl
SW OPEN FOR IEB20
SW CLOSED FOR IEB2S

A

~

~

'"~

. / 1/

/'

l"- I--

0;

z

'...."

;!:

l"- I--

0.7

<..)

w
~O.OO 5== IEB2S
w
'"

~o.oo 2~ I~
f-"'"
wO.OO 1
-60 -40
-20

0.8

~

u.

o
o

./

0.6

r-- r-- I-I-- l"-

I--

'"
W

W

~

W

1~

10V

=

o

lW

O. 5
-60

lW

TJ, JUNCTION TEMPERATURE lOCI

-40

-20

20

40

60

2N4871

-2N487 0

80

TJ, JUNCTION TEMPERATURE lOCI

MOTOROLA THYRISTOR DEVICE DATA
3-50

-

1

100

120

140

2N4870 • 2N4871
PEAK POINT CURRENT
FIGURE 9 - EFFECT OF TEMPERATURE

FIGURE 8 - EFFECT OF VOLTAGE
1.4

3.0

TJ ' 25 0 C

<

-=.....z

2.5

'":::>
u

2.0

~

.....

1\\

~

~
.....
.....

1.0

~

0.5

..

1.0

::5
t:::

:\.

"'j'.......

,;,

t--- t--- t--

0.8

.....

"'-

'"

~ 0.4

~

0.2

o

6.0

9.0

t--

~ 0.6

~

3.0

-

r-- t--

i3

1.5

~

VS2S 1'25V

......

1.2

i'5

~

.....
z

<:::t.

12

15

18

21

24

27

-60

30

-40

20

-20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE IOC)

VS2Blo INTER BASE VOLTAGE IVO LTS)

INTERBASE RESISTANCE
FIGURE 11 - EFFECT OF TEMPERATURE

FIGURE 10 - EFFECT OF VOLTAGE
1.4
NORMALIZED @3.0V
TJ' 25 0 C
IE' 0

~
N
:::;

..
~

CJ

10

1.3

z
W

z

ffi

1.2

1. 1

.....

'":li
'"

1. 0

o

.....3.0

"..,...

6.U

..

w
u

J

u

~
iii
'"w
~

VB2Bl ' 3.0 V
IE'O

g

....-V

V V

9.0

12

./

15

/

z

V

21

24

V

!;;

iii
'"w
'"

~

/

6.0

.....

'~"

18

8.0

./

~

2.0
-60

30

27

4.0

-40

./

/"

~1
2N4870

./

/'

20

-20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE (DC)

VB2B I, INTERBASE VOLTAGE (VOLTS)

TYPICAL CHARACTERISTICS
VALLEY CURRENT
FIGURE 13 - EFFECT OF TEMPERATURE

FIGURE 12 - EFFECT OF VOL TAGE
16

<
.§
.....
z

14

16
TJ' 250 C
RB2' 10011

<
.§

2

.....

10

~

8.0

a:

I

u

V

~ 6.0

./'

4. 0

...V
~

2.0

II:

~ I--

~

~

12

i'5

w

'"
II:
:::>

~

VB2Bl' 20 V
14 ,--RBZ= lOOn

~

1487~

V

~

~ I-- Z~4870

6.0

9.0

12

15

18

21

-- -

24

27

r- I--

u

...;<5

8.0
6.0

t-t--

....

.. 4.0
>
~ 2.0
0
-60

0
3.0

0

:::>

!Z

30

VBZB1- INTERBASE VOLTAGE (VOLTS)

r-.r-.-

r-- ~Nt

2N4S'7ii"

-40

-20

W

~

r- r--......... ...

r- t--

~

~

TJ, JUNCTION TEMPERATURE (DC).

MOTOROLA THYRISTOR DEVICE DATA
3-51

100

-10lW

WO

•

2N4870 • 2N4871
VALLEY VOLTAGE
FIGURE 14 - EFFECT OF VOLTAGE

FIGURE 15 - EFFECT OF TEMPERATURE

1. 8

1.8
TJ = 25 0 C

7

V

6

lL ~

f-""'"""

~
o

/
1/

j

1.4
30

60

1.6

VB2BI = 10V_

r-.

r-

~

'"..
:;
w

o
>

V

5

o

~

1.4

---

r-- l"- t---I'"

>-

..
j

V

';;

1.2

>

90

12

IS

18

21

24

27

1.0
-60

30

-40

-20

W

VB281.INTERBASE VOLTAGE (VOLTS)

W

~

M

100

IW

~

TJ. JUNCTION TEMPERATURE (DC)

FIGURE 16 -OUTPUT VOLTAGE

~o

0
RBI = lOon

~ 10
w
~ 7. 0

~ 5. 0

,......

>

~ 3. oi"":
~ 2. 0

""::ll

~ 1. 0
~ D. 7
W
~ O. 5

I---'

",

......-: ~-

.... I--"'t""'"

-

- .....- -_...r~ r-- '-"'" ~--

~ ~-

i-'

I~

~-

-

Ion

.- .-

~n<:.

~r-

0.002

-- .-

_ 1-"-

.-~-

ISEE fiGURE 31

VI = 20~l=
RB2=1001)
TA = 250 C
2N4870
--2N4871

f

L.oo'

ci; o.3t""'" .... "
.....
:i' O. 2 , .
0.001

~-

i.--'~

20n

~

0.005

0.01

0.02

0.05

0.1

0.2

0.5

CI. CIRCUIT CAPACITANCE. EMITIER TO GROUNO (.F)

MOTOROLA THYRISTOR DEVICE DATA
3-52

1.0

2.0

5.0

10

2N4948
2N4949

PN Unijunction Transistors
Silicon PN Unijunction Transistors
· .. designed for military and industrial use in pulse, timing, triggering, sensing,
and oscillator circuits. The annular process provides low leakage current, fast
switching and low peak-point currents as well as outstanding reliability and uniformity. Recommended usage includes:
• Silicon Controlled Rectifier Triggering Circuits • Long-time Delay Circuits - 2N4949

2N4948

I

~un.

I

I

~::

I

CASE 22A-01
STYLE 1

MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol

Value

Unit

RMS Power Dissipation. Note 1

PD

360

mW

RMS Emitter Current

Ie

50

mA

Peak Pulse Emitter Current, Note 2

ie

1

Amp

Rating

Emitter Reverse Voltage

VB2E

30

Volts

Storage Temperature Range

Tstg

-65 to +200

°C

Notes: 1. Derate 2.4

mwrc increase in ambient temperature. Total power dissipation (available power to Emitter and Base-Two) must be limited by

the external circuitry. Interbase voltage (VB2B1) limited by power dissipation. VB2B1 = VRBB • PO'
2. Capacitance discharge current must fall to 0.37 Amp within 3 ms and PRR " 10 PPS.

ii.,:.,T'i{:'.Ll." i;' t~:'; "ft0;{!. 'v{;:;"'.f"0':.':ili1L.;~.d'~~;'~<";k."!< i4"n'fikL'
,""'0.,j!, """"'. ,'.,," " ... '*"1. ;t'l-,.;\!, ..... ,

w

~
~

zo

~

'"

3.0

""
~

2.0

::;j

'"
.!:"
1.0
1.0

I I

o. 3

3.0

5.0

7.0

10

20

30

50

70

100

NUMBER OF CYCLES

I

o. 2

II

fil
«
~

FIGURE 5 - POWER DISSIPATION

z

t;

2.0

IL

z

«

•

'"
iil

I I

w

T'"'-

::>
'"

I

O. 5

u

l"""-

5.0

u

25"C

L

D. 7

7.0

::;

-

«2 D.'
"'~
::>~

0.03

"'«
x~



JAKRl=l00'= 7.0 1V

..........

0.7

0.6

RGK=1.0k_

~

;;:

....
w
....

..
to

ci

i:::i
a::

........

a::
~

ffi

""

0.4

>

~

i'.. ......

0:

....
w

....«

I"-.
..........

-25

::;

~

..........

-50

~

....

0.5

-75

..

o

r--.....

0.3

o
~

ffi
to

to

FIGURE'S - GATE TRIGGER CURRENT

o

50

25

75

100

125

to

200

\

100

VAK=7.0V~

Rl = 100.::::::::
0

O~

2N5062·64

"\

10

5.0
1--2N5060·61

2. 0

~

O. 5

.,..:

E' O.2
-75

-50

-25

TJ,JUNCTION TEMPERATURE (OC)

~
N

3-0

::;

~

a:: 2. 0
o
~

....
z

J

" ""
.........

~ 1.0

O.8

%

0.6

9o
~

V

-V
I

+V
I

~

A--~~----JV~------,

- --

LOAD

2N5060,61

........

r-....

""'-

O.4
-50

-25

0

25

50

125

BLOCKING
STATE

-+

RRM

A-

2N5062.';--

-75

tON STATE
IH
A+
____

I

to
Z

1

-V

"' ~

100

75

50

FIGURE 10 - CHARACTERISTICS AND SYMBOLS
TYPICAL V - I CHARACTERISTICS

AK = 7.0 V
Rl=l00 RGK= l.Ok-

..............

w

a::
a::

25

TJ, JUNCTION TEMPERATURE (OC)

FIGURE 9 - HOLDING CURRENT
4.0

~

1.0

75

100

125

TJ,JUNCTION.TEMPERATURE (OC)

MOTOROLA THYRISTOR DEVICE DATA
3·58

K

2N5164
thru
2N5171

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristor
· .. designed for industrial and consumer applications such as power supplies.
battery chargers. temperature. motor. light and welder controls.
•
•
•
•

SCRs
20 AMPERES RMS
50 thru 600 VOLTS

Supplied in Either Pressfit or Stud Package
High Surge Current Rating - ITSM = 240 Amps
Low On-State Voltage - 1.2 V (Typ) @ ITM = 20 Amps
Practical Level Triggering and Holding Characteristics - 40 mA (Max) and
50 mA (Max) @ TC = 25°C

AO

.~

G

oK

MAXIMUM RATINGS
Rating

Symbol

'Peak Forward and 'Repetitive Reverse Blocking
Voltage. Notes 1 and 2
2N5164.2N5168
2N5165.2N5169
2N5166.2N5170
2N5167.2N5171

VORM
or
VRRM

'Non-Repetitive Peak Reverse Blocking Voltage
2N5164.2N5168
2N5165.2N5169
2N5166.2N5170
2N5167.2N5171

VRSM

On-State Current RMS
Average On-State Current
(TC = 67°C)

Valua

Unit
Volts

50
200
400
600

CASE 263-04
STYLE 1

Volts
75
300
500
700

IT(RMS)

20

Amps

IT(AV)

13

Amps

2N5168 thru 2N5171

~"..
STYLE 1

2N5164 thru 2N5167

12t

235

A 2s

'Peak Non-Repetitive Surge Current
(One cycle. 60 Hz. TJ = -40 to + 100·C)
Preceded and followed by rated current and voltage

ITSM

240

Amps

'Peak Gate Power
(Maximum Pulse Width

PGM

5

Watts

Circuit Fusing
(TJ = -40 to +100·C. t .. 8.3 msl

=

10 jIS)

'Average Gate Power

PG(AV)

0.5

Watt

'Peak Forward Gate Current
(Maximum Pulse Width = 1Ol-'sl

IGM

2

Amps

Peak Gate Voltage

VGM

10

Volts

TJ

-40 to +100

°c

Tstg

-40 to +150

°c

30

in. lb.

'Operating Junction Temperature Range
'Storage Temperature Range
Stud Torque
2N5168-2N5171
'Indicates JEDEC registered data.

Notes: 1. VDRM for all types can be applied on a continuous dc basis without incurring damage. Ratings
apply for zero or negative gate voltage. Devices should not be tasted for blocking capability in a
manner such that the voltage applied exceeds the rated blocking voltage.
2. Devices should not be operated with a positive bias applied to the gate concurrent with a
negative potential applied to the anode.

MOTOROLA THYRISTOR DEVICE DATA
3-59

•

2N5164 thru 2N5171
THERMAL CHARACTERISTICS
Characteristic

Symbol

"Thermal Resistance. Junction to Case
2N5164. 65. 66. 67
2N5168. 69. 70. 71

ELECTRICAL CHARACTERISTICS (TC

Typ

Max

1
1.1
=

Unit
.C/W

R/lJC
1.5
1.6

25·C unless otherwise noted.)
Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM. gate open) TJ = 2S·C
TJ = 100·C

IORM.IRRM

Min

Max

Unit

-

10
5

pA
mA

-

40
75

-

1.5
2.5

-

Gate Trigger Current (Continuous dc). Note 1
(VO = 7 Vdc. RL = 100 0)
*(VO = 7 Vdc. RL = 100 O. TC = -40·C)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 7 Vdc. gate open)
*(VO = 7 Vdc. RL = 100 O. TC = -40·C)
*(VO = Rated VORM. RL = 100 O. TJ = 100·C)

VGT

Peak On-State Voltage (Pulse Width = 1 ms max. duty cycle"" 1%)
(lTM = 20 A)
*(lTM = 41 A)

VTM

mA

-

Volts

-

Holding Current
(VO = 7 Vdc. gate open)
*(VO = 7 Vdc. gate open. TC = -40·C)

IH

0.2

-

8

1.5
1.7

-

50
90

Volts

mA

Typical

•

Gate Controlled Turn-On Time (td + t r )
(lTM = 20 A. IGT = 40 mAdc. Vo = Rated VORM)

tgt

Circuit Commutated Turn-Off Time
(lTM = 10 A. IR = 10 A)
(lTM = 10 A. IR = 10 A. TJ = l00·C)
(Vo = VORM = rated voltage)
(dv/dt = 30 V/p.s)

tq

1

p's
p.s

20
30

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM. Exponential Wave Form. Gate open. TJ = 100·C)

dv/dt

'Indicates JEDEC registered data.
Note 1. Devices should not be operated with a positive bias applied to the gate concurrent with a negative
potential applied to the anode.

MOTOROLA THYRISTOR DEVICE DATA
3-60

50

V/p.s

2N5164 thru 2N5171
EFFECT OF TEMPERATURE UPON TYPICAL TRIGGER CHARACTERISTICS
FIGURE 2 - GATE TRIGGER VOLTAGE

FIGURE 1 - GATE TRIGGER CURRENT
20

~

oJF-STJE VOJAGE =

'-.....

10

15

'"
~
W

to

S!

1

in

~ 0.9

OFF-STATE VOLTAGE = 7 V -

2:-

.............

~ 0.8

........

«

1.0

..............

':;

......
...........

u

'"

V-

o



S'
2.0
-60

-411

-20

0
20
411
60
80
TJ,JUNCTION TEMPERATURE (DC)

100

120

0.3
-60

140

-40

-20

20
40
60
80
100
TJ, JUNCTION TEMPERATURE (DC)

120

140

MAXIMUM ALLOWABLE NON-REPETITIVE SURGE CURRENT
FIGURE 4 - SUB-CYCLE SURGES

FIGURE 3 - 60 Hz SURGES
500

240

220

"-r-...

.. 200

I

~

'":!

~ 180

'"
'"
~

""~ ~

w

~

r---...
140

~

~

100

1---11

JJ=JclolJc
I~

300

W

to

'"
~

i'....
........

V\

t-

f-

><

«
~ 120

'"

o~

:'!"

'"'"
.........

160

a7 40

:'5

to

'"~

II

plIOR)O SJRG1E
SCR OPERATED AT
RATED LOAO CONOITIONS
TJ =-400 C10 +1000 C
f =60 MHz

=

w
t-

«
~ 200

r--...

'" "'",
121 235 A2,

z
o

V

"-

'"
~

•

........

CYCLE-l

80

o
1.0

10 0

2.0

4.0

6.0 8.0 10

20

40

60

80 100

1.0

1.5

2.0

NUMBER OF CYCLES

3.0

5.0

7.0

10

PULSE WIDTH 1m,)

~.
MOTOROLA THYRISTOR DEVICE DATA
3-61

2N5164 thru 2N5171
FIGURE 5 - GATE TRIGGER
CHARACTERISTICS

2.0

FIGURE 6 - EFFECT OF TEMPERATURE ON
TYPICAL HOLDING CURRENT

r r - - r - - . . . . : ' - MAXIMUM ALLOWABLE FORWARO
GATE CURRENT

20

IGM = 2.0 AMP

OJF.STJE VOLtGE =11 V -

0.1

~

.§. 10

0.5

....

a:
:! 0.3

....'"
ffi

'"
'"
:::>
<.>
w
....

............ .........,

RECOMMENDED TRIGGER
CURRENT

0.2

.....,

ffi

.....

~ 7.0

~

.....
.......

~ 5.0

§

0.1

1

;lj

0.01

1

!E

0.0

L __ , _____ _

ALL UNITS WILL TRIGGER AT ANY VOLTAGE
ANO CURRENT WITHIN THIS AREA
(TC = 250 C. VAK = 1.0 V)

0.03

e

:J::

: ' 3.0
2.0
-60

40 mA GATE CURRENT REOUIRED
TO TRIGGER ALL UNITS@TJ = 250 C

0.02

MAXIMUM ALLOWABLE FORWARD
GATE VOLTAGEVGM= 10 VOLTS

~

-40

-20

20
40
60
BO
TJ. JUNCTION TEMPERATURE (DC)

100

120

140

~

O.OOOlott·tl-I--r--~I--r1-"TI";:='-rj-"TI---r-Tj-r---I
~

In

u

~

~

~

w

~

u

~

W

VG. GATE VOLTAGE (VOLTS)

•

DERATING AND DISSIPATION FOR RESISTIVE AND INDUCTIVE
LOADS (f = 60 to 400 Hz, SINE WAVE)
FIGURE 7 - AVERAGE CURRENT DERATING

FIGURE 8 - ON-STATE POWER DISSIPATION

~
24~-t--t--+--+--+--;--;---r~4r~
e
:; in 20~-t--+--+--+--+--;-r-t::;.,-c--r-+---:

"'< ........

;1:<

g; ~ 16~-t--+--+--+
......
we

~ ~ 121--t--±-::-+1''"7I''h~''t--

"'Wu;...

>'"
"': C

g
2.0

4.0

6.0

B.O

10

12

14

16

IB

20

B.OI--t--.....,fi~I"--t---t--

I--M"-IF---t---t---t-- Q = CONOUCTION II:NGLE

2.0

IT(AV). AVERAGE ON·STATE CURRENT lAMP)

4.0

6.0

B.O

10

12

14

16

ITIAV). AVERAGE ON·STATE CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-62

IB

20

2N5164 thru 2N5171
FIGURE 9 - ON-5TATE CHARACTERISTICS
_ 250
~ 200

---....-

~
~100
~ 70

!5
<..>

50

W

30

~
~

TYPICAL

20

'"

//

//

~

;/

.'"",

y/

z

~ 10

-

MAXIMUM

~ 1.0
W
z 5.0

~

z

~

2.0

~

.t:'

-TJ l000 C
--TJ-25 0 C

!

3.0

1.0
0.25

I

I

I

I

I

1.0

0.5

2.0

1.5

3.0

2.5

3.5

3.75

VT,INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

FIGURE 11 - MOUNTING DETAILS FOR
PRESSFIT THYRISTORS

FIGURE 10 - TYPICAL THERMAL
RESISTANCE OF PLATES
400

'"w

13

.....

"-

200

w

'"
~

g

100

«

w

60 _
z'" 40
en
~

~
:J:

20 -

10
1.0

L 505 Oia.-F==!/ H..t Sink
- ~
C@:;.: ::@% },

"

T

2.0

3.0

~

Intimat~

........ H..tSinkPlate

Complete

•

'ThiDChaSsiS

Contact Area

......

"
7.0

Additional

~
I~~

......

5.0

r--

Heat Sink Mounting

Rivet

.....

thick bright aluminum. Heat
sinks held vertically in still
air. (Heat sink area is twice
area of one side.l)
I

1.5

--i

.24

Units mounted in center of
square sheets of l/B·inch

Or- .01 Nom.

lIl!l!l!I' .01 Nom r17'

.501

"

~

Chamfer

~

Knurl Contact
Area
Thin-Chassis Mounting

10

R8SA, THERMAL RESISTANCE (OCIW)

"

MOTOROLA THYRISTOR DEVICE DATA
3-63

- - - - ...

_

...

7

_------

..

2N5431

PN Unijunction Transistors
Silicon Annular Unijunction Transistors
· .. characterized primarily for low interbase-voltage operation in sensing, pulse
triggering, and timing circuits.
•
•
•
•

Low RBB Spread - 6 to 8.5 kO
Low Peak-Point Current - Ip = 4 pA. (Max) @ VB2B1 = 4 V
Low Emitter Saturation Voltage - VEB1(sat) = 3 V (Max)
Narrow Intrinsic Standoff Ratio - TJ = 0.72 to 0.80

PN UJTs

CASE 22A-01
STYLE 1

MAXIMUM RATINGS (TA = 25'C unless otherwise noted.)
Symbol

Value

Unit

RMS Power Dissipation, Note 1

PD

360

mW

RMS Emitter Current

Ie

50

mA

Peak-Pulse Emitter Current, Note 2

ie

1.5

Amp

Emitter Reverse Voltage

VB2E

30

Volts

Interbase Voltage, Note 3

VB2B1

35

Volts

TJ

-65 to + 125

'C

Tstg

-65 to +200

'C

Rating

I

Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. Derate 3 mWI'C increase in ambient temperature.
2. Duty Cycle"" 1%, PRR = 10 PPS Isee Figure 5).
3. Based upon power dissipation at TA = 25'C.

MOTOROLA THYRISTOR DEVICE DATA
3-64

2N5431
ELECTRICAL CHARACTERISTICS (TA

= 25°C unless otherwise noted.)

Characteristic
Intrinsic Standoff Ratio, Note 1
(V82Bl = 10 V)

Fig. No.

Symbol

Min

Max

Unit

4

71

0.72

0.80

-

RBB

6

8.5

kG

aRBB

0.4

0.8

%rC

3

Volts

Interbase Resistance
(VB2Bl = 3 V, IE = 0)
Interbase Resistance Temperature Coefficient
(VB2Bl = 3 V, IE = 0, TA = 0 to 100°C)

-

Emitter Saturation Voltage, Note 2
(VB2Bl = 10 V, IE = 50 mAl

VEB1(sat)

Modulated Interbase Current
NB2Bl = 10 V, IE = 50 mAl

IB2(mod)

5

30

mA

Emitter Reverse Current
(VB2E = 30 V, IBl = 0)

IEB20

-

10

nA

Peak-Point Emitter Current
(VB2Bl = 25 V)
(VB2Bl = 4 V)

Ip

-

0.4
4

Valley-Point Current (2)
(VB2Bl = 20 V, RB2 = 100 ohms)

IV

2

-

mA

VOBl

1

-

Volts

Base-One Peak Pulse Voltage
(VBB = 4 Volts)

3

pA

Notes: 1.7], Intrinsic standoff ratio, is defined in terms of the peak-point voltage, Vp, by means of the equation: Vp = 7]VB2Bl + VF, where VF is
about 0.45 volt at 25°C @ IF = 10 pA and decreases with temperature at about 2.5 mvrc. The test circuit is shown in Figure 4. Components
Rl, C" and the UJT form a relaxation oscillator; the remaining circuitry serves as a peak-voltage detector. The forward drop of Diode 0,
compensates for VF. To use, the "cal" button is pushed, and R3 is adjusted to make the current meter.
read full scale. When the "cal"
button is released, the value of 7] is read directly from the meter, if full scale on the meter reads ,.

M,.

2. Use pulse techniques: PW = 300 p..s, Duty Cycle ::s:;; 2% to avoid internal heating, which may result in erroneous readings .

FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES

FIGURE 1 - UNIJUNCTION TRANSISTOR
SYMBOL AND NOMENCLATURE

VE
CUTOFF

•

NEGATIVE

~ESISTANCF
-REG,ON· ,-

REGION
Vp

SATURATION
REGION

I

I
I
I

:
EMITTER TO
I
BASE·'
:CHARACTERISTIC

E

I VALLEY \

VEB' (sat)
Vv

-+ _____ ~-':.c:.INT

t-----I
I
I

I

I

I

'B2

=

0

:

-+~~------~----~IE

Ip

W'u.,""""'" ",",'"",/:,
",. ""/{':<')''I,,''wi',,,: ,,:.'y ':J0j"j),.$;;ft:,';M,'fi!J:'LXj'lk2'~£,fH, U$!;0 '!i''f:[,,:y.V.AY~'')fIf'£!J'' '\i' j.)'
,,'t
~.£: f1..x-"t ... ¥.l &.lm- :/..:::.:~ .'."'., ;;ff. K~":",;$'{;,~~,~.#'~',.7~':f,(·. A-'.<-'"%:r'{$' 'r.~..@ ,${..... ·,vN:.wJ..... S,,""it.,~'-4
:f«.':

MOTOROLA THYRISTOR DEVICE DATA
3-65

2N5431
FIGURE 4 - '11 TEST CIRCUIT

FIGURE 3 - VOB1 TEST CIRCUIT

+10 V

Vl
+4.0 V

CAL.-1

loon

--Bl

910

kn

VOBl

Cl

~

C1

O.l/-1F

0.2/-1F

t 0,_ diode with the following characteristics:

VF

= 0.49

V @ IF

= 10 /-IA

I R ';;2.0ILA @VR=20V

•

FIGURE 5 - PRR TEST CIRCUIT
AND WAVEFORM
DUTY CYCLE .. 1.0%, PRR" 10 PPS

0.15

~::t==:J::=====*--F

CURRENT WAVEFORM THRU R,

20·30 V
(AdJ ust for 1.5 A
peak in R,)

-

IIII

III

rt III ' • •:.811111

IIIIII

MOTOROLA THYRISTOR DEVICE DATA
3-66

I'

-=

2N5441
thru
2N5446

Triacs
Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and military applications for the control of ac
loads in applications such as light dimmers, power supplies, heating controls,
motor controls, welding equipment and power switching systems; or wherever
full-wave, silicon gate controlled solid-state devices are needed.
• Glass Passivated Junctions and Center Gate Fire
• Isolated Stud for Ease of Assembly
• Gate Triggering Guaranteed In All 4 Quadrants

TRIACs
40 AMPERES RMS
200 thru 600 VOLTS

~

AO

G

OK

MAXIMUM RATINGS
Rating

Symbol

*Peak Repetitive Off-State Voltage
(TJ = -65 to + 110·C)
1/2 Sine Wave 50 to 60 Hz, Gate Open

Value

*Peak Principal Voltage
2N5441,2N5444
2N5442, 2N5445
2N5443, 2N5446

Unit

Volts

VDRM

200
400
600

*RMS On-State Current
(TC per Figure 2)
(TC = + 100·C)
Full Sine Wave, 50 to 60 Hz

40
20

*Peak Non-Repetitive Surge Current
(One Full Cycle of surge current at 60 Hz,
preceded and followed by a 40 A RMS current,
TJ = +110·C)

ITSM

300

Amps

*Peak Gate Power
(Pulse Width = 10 i. a..

X ~ 80

«w

TYPICAL

:;;'"

.=> ~

...... ~

70
60

L.:::::::::= :::;;..--

o

90

:;;:;;

./"""'-/

;( 10

;;:- 0

~~110~~+--+--+--+--+--+--+--+--~-~

//

MAXIMUM

360°

CURRENT WAVEFORM =SINUSOIDAL
LOAO = RESISTIVE OR INDUCTIVE --!----!---+--+---I
CONDUCTION ANGLE =360°

120

V/

CONDUCTION ANGLE
= 01 + 0111

w

130r---r--.---.---,---.---.---r--,---,---,

/

OI~rrOI'"

;::

::

FIGURE 2 - RMS CURRENT DERATING

10
20
30
ITIRMS). FULL CYCLE RMS ON-STATE CUR RENT lAMP)

40
ITIRMS), RMS ON·STATE CURRENT lAMP)

FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE

FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
70

1.7

'"
'::;
0

-- --

1.5

?

w

to

«

1.3

>

a:
w

to
~

1.

1~ t-.

I"'-.9

-~ r-

I-

«
to

>= .5

.3
-60

-40

V

-

20

40

'"
~

r--

...........
~~
.......
.........
~
r---....

60

80

100

~ t::-....

W
F1/'1 "" r---..

w
I-

~

120

QUAORANTS

-

10

4-

70
-60

140

p-.......

~~

............

20

I-

f:::::::::: ~

I
OF~-STAT~ VOLiAGE = \2 V-

....... ........

a:

r-- .........,;;;:...

3
4/

-20

30

.........

w

/'" r-..

./' r--

2V /

r- OUAD RANTS

a:

5a:
a:

"""-

,

1 l7"> -..L I>': ~

.7

.s

50

;:3

r-

a:

I-

w

=12 V-

t-..

'::;
0

OFF-STATE VOLTAGE

~

-40

20

-20

TJ. JUNCTION TEMPERATURE 1°C)

40

.........

~
.......
........... ~ ~

60

-

80

......

100

120

140

T.1. JUNCTION TEMPERATURE 1°C)

FIGUR E 5 - TYPICAL THERMAL RESPONSE

-'

1.0
0.7

~_ 0.5

PR ESSF IT PACKAG E

~~ 0.3

r-

.....

I-N

~~ 0.2

i--"'"

w:;;
ina:

zo

« z
a: -

-Sru-D PACKAGE AND ISOLATED STUD PACKAGE

".

0.1

V

..-- i--"'"

::;~ 0.07
>z
~ ~ 0.05

~ ~ 0.03

ZOJCIt) = rlt). ROJC

0.02

I I I I Iii

::;a:

II I

0.01

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

t, TIME 1m,)

MOTOROLA THYRISTOR DEVICE DATA

3-69

200

500

1k

2k

5k

•

2N5441 thru 2N5446
FIGURE 6 - ON-STATE CHARACTERISTICS

FIGURE 7 - TYPICAL HOLDING CURRENT

•

0

30

0

0

II

1...

0

ffi

~

...w

.......

'"z

II

MAIN TERMINAL #1 POSITIVE

/

.......

.........

.;

91.0

r.....
r--..
.......
r--..

o

:I:

~ 5.0 r--- jlN TjRMINAIL

7. 0

:z

P,SITIVE

.......

1

1

5. 0

lL

0:
0:
::J

....

"""'" r..::: t"- r-...

~ I0

I

0

~

I" :--....

0:
0:

0

~

20

GATE OPEN
~

~

I'
I'

3. 0
-60

-40

-20

20

40

60

80

100

120

140

TJ.JUNCTION TEMPERATURE (OC)

3. 0

~
;: 2. 0
o

FIGURE 8 - MAXIMUM ALLOWABLE SURGE CURRENT

'"
:::>

:i:
z

t
~
~

500

1.0

~».~~<. ~.~~:*~~~-¥...d<~~:,i ~>rn> ""jV~~~ ~'~I¥~~_ ~~".;':" ·».ti.~.i.li(Krly~.¥'~~""',

< <,

J

Jf: , < .

.'

MOTOROLA THYRISTOR DEVICE DATA
3-72

2N5567 thru 2N5570. T4101M • T4111M. T4121 Series
FIGURE 3 - POWER DISSIPATION

FIGURE 4 - POWER DISSIPATION
(Pressfit and Stud)

(Isolatad Stud)

14

I

I

I

FULL WAVE SINUSOIOAL
WAVEFORM

/"

T4121 series only

/

/"
MAXIMUM . /

V

L
./'

-'"
"" TYPICAL

./' / '
./ ./

.......-::: ~

........::: V

~V

./
10
IT(RMS). RMS ON-STATE CURRENT (AMP)

IT(RMS). RMS ON-STATE CURRENT (AMP)

FIGURE 5 - TYPICAL GATE TRIGGER VOLTAGE
1.8

en

O+-STA~E VOdAGE = \2 V-

1.6

~

o

~ 1.~
~

1.2

o

>
~ 1.0

'"'"
~

;?
.§ 30
>-

I'-....
--.........

--..........

Foo..

-..::: ~

>-

I- QUAORANTS

«

'" 0_6

I~~

'"'"'

I

-60

-40

-20

20

t----

........

-.........

2.

>w

>«

-......

........

...... ~

'"

10

p~ 7.0

QUADRANT

I

I
20

40

60

80

100

120

140

5.0
-60

-40

I

'-r

:::::-- i"--..

>-.. <'~ b::>(

I'~ ,....,.....
2 .....
3-

..........

......

.............
~

........

L

........

~

........

4""""""

-20

..........
20

40

60

80

TJ. JUNCTION TEMPERATURE (DC)

TJ. JUNCTION TEMPERATURE (DC)

?j1G~7r;~~i;< ""'''-<''''~-''.
i

-......

...............

...............

~

~~

..........

..........., ...........

I'-...

w

...............

.........-...... ......,

'"
S!

:::-=:::::

OFIF-STA~E VOL+AGE = 112 V-

............

~

3/

> 0.4

a

........

1~

0.8

~

/
.......... ./

r--.;: =:::::::::,..

w

~

JUADR~NT 4

--...........

w

'"
«

FIGURE 6 - TYPICAL GATE TRIGGER CURRENT
50

MOTOROLA THYRISTOR DEVICE DATA
3-73

100

120

140

•

2N5567 thru 2N5570. T4101M • T4111M • T4121 Series
FIGURE 7 - ON-STATE CHARACTERISTICS

FIGURE 8 - TYPICAL HOLDING CURRENT
20

100
70

50
TJ = 250 C

/

30
20

JL

ii:
~

~

10

'"
'"

7. 0

~

LV

,..........

V

>~ooc

!....

10

~

1.0

:::::::"

t---.. f'--- "'-

z

1/
~

'-'

/

~ 5.0

§

........
[""'-...

I

2.0
-60

-40

-20

l'-...

f"--..

P~sITIVf

":E' 3.0

~ 5.0

MAIN TERMINAL #1
POSITIVE

MAIN TERMINAL #2

o

w
....

GATE OPEN

.......

.........

:::>

'I

~

~

............

./

r-...
l:"'--,
...........

I

r--....

T'
T'

20
40
60
80
TJ,JUNCTION TEMPERATURE 10C)

100

120 140

z

o

~ 3. 0
~
z
~ 2. 0

FIGURE 9 - MAXIMUM NON·REPETITIVE SURGE CURRENT

~z
.~

200

1. 0

.7

::--,.

TJ
f

..::,

......

.5

Surge IS preceded and
followed by rated
current .

1--.3

•

fV\?1

.2

.1
1.0

2.0

2O

4.0

3.0

2.0

1.0

3.0

=-65'0 +1000C
=60 Hz

5.0

--............

..........

i't-.

7.0

20

10

30

50

t70 100

NUM8ER OF CYCLES

VTM, INSTANTANEOUS ON·STATE VOLTAGE IVOLTS)

FIGURE 10 - TYPICAL THERMAL RESPONSE
1. 0

O. 7
O. 5
-'0
~~

PRESSFIT PACKAGE

o. 3

ffi;t o. 2

'"

f5~

~~

~~

.!!!

~

k:::-JT;;'o PACKAGE

I-

,,~

.... 0
....

I--'"

...... I--" ......... l -

o. I
0.07
0.05

:g~ 0.03

ZOJCIt) = rlt). ROJC

~ i~lill

0.0 2

I I

0.0 1

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1k

2k

5k

t,TIME 1m,)

.IIHII "710 1& I

Pii. . .lllll'III• •12U.IIII. . . . .2Il1Z· III'!'_II
MOTOROLA THYRISTOR DEVICE DATA
3-74

~

Triaes
Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and military applications for the control of ac
loads in applications such as light dimmers, power supplies, heating controls,
motor controls, welding equipment and power switching systems; or wherever
full-wave, silicon gate controlled solid-state devices are needed.
• All Diffused and Glass Passivated Junctions for Greater Stability
• Pressfit, Stud and Isolated Stud Packages
• Gate Triggering Guaranteed In All 4 Quadrants

2N5571
thru
2N5574
2N6145
thru
2N6147
T4100M
T4110M

MAXIMUM RATINGS
Rating

Symbol

*Peak Repetitive Off-State Voltage
(TJ = -65 to +100·CI
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N5571, 2N5573, 2N6145
2N5572, 2N5574, 2N6146
T4100M, T4110M, 2N6147
*Peak Gate Voltage

20

Volts

15
10

=

Peak Gate Power
*(TC = 80·C, Pulse Width
2N5571 thru 2N5574
T4100M, T4110M
*(TC = 80·C, Pulse Width
2N6145 thru 2N6147
*Average Gate Power
(TC = 80·C, Pulse Width

ITSM

100

Amps

12t

40

A 2s

1 to 8.3 ms)

=

Watts

PGM

,

1 /Ls)
16
16

= 2/LS)
20

= 8.3 ms)

*Peak Gate Current
*Operating Junction Temperature Range
*Storage Temperature Range

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-65to +100

·C

Tstg

-65 to + 150

·C

30

in. lb.

-

Stud Torque
*2N5573, 2N5574, T4110M
*2N6145, 2N6146, 2N6147

P
?

"

THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.

I

TRIACs
15 AMPERES RMS
200 thru 600 VOLTS

Amps

IT(RMSI

*Peak Non-Repetitive Surge Current
(One Full cycle of surge current at 60 Hz, preceded
and followed by rated current, TC = 85·C)
Circuit Fusing
(TC = -65 to +80·C, t

Unit
Volts

200
400
600
VGM

*RMS On-State Current
(TC = -65 to +80·C)
(TC = +85·C)

Value

VDRM

I

CASE 174-04
(TO-203)
STYLE 3
2N5571
2N5572
T4100M

CASE 175-03
STYLE 3
2N5573
2N5574
T4110M

CASE 311-02
STYLE 2
2N6145
2N6146
2N6147

._1IIIIIIII.,,13

MOTOROLA THYRISTOR DEVICE DATA
3-75

113P",

2N5571 thru 2N5574 • 2N6145 thru 2N6147 • T4100M • T4110M
ELECTRICAL CHARACTERISTICS (TC = 25"C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted.)
Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORMor VRRM) TC = 25°C
TC = 100°C

IORM,IRRM

*Peak On-State Voltage
(lTM = 21 A Peak. Pulse Width = 1 to 2 ms, Outy Cycle .. 2%)

VTM

Gate Trigger Current (Continuous dc), Note 1
(VO = 12 Vdc, RL ='30 Ohms)
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-); MT2(-), G(+)
*MT2(+), G(+); MT2(-), G(-), TC = -65°C
*MT2(+), G(-); MT2(-), G(+), TC = -65°C

IGT

Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VO = 12 Vdc, RL = 30 Ohms)
TC = 25°C
*TC = -65°C
*(VO = Rated VORM, RL = 10 k ohms, TC = + 100°C)

VGT

Holding Current
(VO - 12 Vdc, Gate Open)
(Initiating Current = 500 mAl

Typ

Max

Unit

-

-

10
2

pA
mA

1.3

1.B

Volts
mA

-

-

50
80
150
200

-

-

2.5
4

0.2

Volts

-

mA

IH
TC = 25°C
*TC = -65°C

Gate Controlled Turn-On Time
(Rated VORM, ITM = 21 A Peak, IGT = 160 mA,
Rise Time = 0.1 /LS, Pulse Width = 2 /Ls)

•

Min

tgt

-

75
300

1

2

dv/dt(c)

*Critical Rate-of-Rise of Commutation Voltage
(Rated VORM, ITM = 21 A Peak, Commutating
di/dt = B Alms, gate unenergized
TC = BO°C 2N5571 thru 2N5574, T4100M, T4110M
TC = 75°C 2N6145 thru 2N6147
Critical Rate-of-Rise of Off-State Voltage
(Rated VORM, Exponential Voltage Rise, Gate Open, TC
*2N5571, 2N5573, 2N6145
*2N5572, 2N5574, 2N6146
T4100M, T4110M, 2N6147

-

V//Ls

2
2

10
10

-

dv/dt

=

/LS

V/p.s

100°C)
30
20
10

150
100
75

-

"Indicates JEDEC Registered Data.
Note 1. All Voltage polarities referenced to main terminal 1.

:mII~_m.HI.IIC:II.'fl:UbEi:tISatlJJN;lJ'IIIIiII'i1gJ)I"~
MOTOROLA THYRISTOR DEVICE DATA
3-76

2N5571 thru 2N5574. 2N6145 thru 2N6147 • T4100M • T4110M
FIGURE 1 - RMS CURRENT DERATING
100

~
w
~ 95

....«

tr

...11iw

....
w
«
'"
u

,.=>

"'

~~

","," ~

,-........; ~ 0

85

""" ~

80

....U

• =

75

./

•

-1.
-s\f

f'-. f'...
"-

-

CONOUCTION ANGLE

o

4.0

2.0

6.0

8.0

10

12

'"

18

~w

15t-

I~==+===~==~=

«
~

,. 9.0 1----t----t-----+n"7b~>tc::=---7,.£:...___I--___l

r.........
t.........

,.~ 60 t-----f----t-:;65-'S...-:..--+"'--_t_---t---__jI----i
:;; 3.0 t----t...~S--4----t---_t_--_t_--__jI----i

~

t.........
14

°0~~~~~~--~6.~0--~8~.0~~10~~1~2--~1~4--~16

16

InRMS), RMS ON·STATE CURRENT lAMP)

ITIRMS), RMS ON·STATE CURRENT lAMP)

FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE
1.8
'" 1.6
~
o
2: 1.4

O+-STA~E VOL1AGE =
f""'-....

«
'"
~

1.2

o

>

-

'"'"
~

...........

t-...

0.8

'"

0.4

-60

I
I
-40

;;;:
.§. 30
....
z
w

20

20

~

....

........

~ 10

........

«

'"~. 7.0

t-::::::3
60

80

100

120

140

TJ,JUNCTION TEMPERATURE I"C)

aUAORANT

5.0
-60

t---..

r--,' r--,

r-.....

w

OFIF-STAiE

-......

........

.1

........

I'--- ~ i'..,

[>.,., k:~
v
...... ......... ........L
: .........

I'~

~

I

-40

-20

D

8:V
..........

........

4~

I

VOL~AGE = 112 V-

.........

~ r-----..,

a:

......- ,........::::: E=::::::,.

40

t---

'"
!e

........

12"'~

..........

a:

3/
-20

a
a:

/
-........ ./

I~ ;::::-::::::

I- aUAORANTS

'" 0.6
,..:

::>

...........

r--:::::-= f=:::::::,..

w

....«

V-

JUAOR~NT 4

:""==:::::

~ 1.0

\2

FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
50

I

...........

w

de

12l----+----f----

>

t'-....

---vIF
'-.W

~

'"
~

.......

I I

~

/1800

" "'

f1-1.1--i.

24rr=============,---,---,----,---,~~

!;;( 21

./ 300
,..... /90 0

~ t<-.? f-.....

~

,.«

..

!;;::,....

90

x

FIGURE 2 - ONoSTATE POWER DISSIPATION

~

20

40

60

80

""'"

TJ,JUNCTION TEMPERATURE 10C)

100

120

140

•

:JtJ.::1*'~~lJJi!JiiJfl:,;> ~i.:t;;.·1:.(i9V~'/\it">I!i;,.~
MOTOROLA THYRISTOR DEVICE DATA
3-77

2N5571 thru 2N5574 • 2N6145 thru 2N6147 • T4100M • T4110M
FIGURE 5 - MAXIMUM ON.sTATE CHARACTERISTICS

FIGURE 6 - TYPICAL HOLDING CURRENT

100

20

70

L
TJ= 250 C

50

/. Goooc

!

/. V

V-

30

0

!;;

7.0

g;

5.0

::IE
~

w
a:

""'- "-..

~
~

1.0

::::I

<..>

'"

I/

r--..,

J

MAIN TERMINAL #1
POSITIVE

'" :-....,

......

~

........

/

~ 5.0

§

I(f
Ii:

GATE OPEN

r-.....

I-

II'

20

10

..........

f"'-.,..

b..,

I"'-.

MAIN TERMINAL #2

o

%

prSITIVjE

:- 3.0

I

2.0
-60

fI

-40

..........

I

-20

20

40

60

80

'"

["'-..,

100

l'
l'
120 140

TJ. JUNCTION TEMPERATURE (OCI

<..>

I

0

'J
0

FIGURE 7 - MAXIMUM NON-REPETITIVE SURGE CURRENT

I

200

j

"-

::IE

0

~

I-

,.;

.1::"

z

O.7

~

100

o.5

<..>

70

w

~

TJ = -65 to +1000C
1= 60 Hz
Surge is preceded and
lollowed by rated

.......

......

current.

iil

o.3

•

.......

a:
::::I

"" 50
~

"-

,.;

.2

'"

.!:" 30

o.1
0.6 0.8 1.0 1.2

1.4

I~¥I

20
1.0

1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4

2.0

3.0

VTM. MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

5.0 7.0

~

10

20

.......

r---r-,

30

50

70 100

NUMBER OF CYCLES

FIGURE 8 - TYPICAL THERMAL RESPONSE
1.0
O.7
O.5
PRESSFIT PACKAGE

.... 0

r-

~



~

.?

lMO

---

-......

-..... I"---.

:;:
10

I

10
15
VS, SUPPLY VOLTAGE IVOLTSI

5
-50

20

o

-25

RG - 10 kO

t::::::""

-- --..

a:
a:
'-'

I
100kO

-

-jo...

~

;:: 100 t-".
zw

--

+25

r-

100kO

~

lMO

-,......

+50

+75

FIGURE 6 - FORWARD VOLTAGE

FIGURE 7 - PEAK OUTPUT VOLTAGE
25

I

'='

'"

20

..'='

15

2:
to

./

....

~

o

5, 0

L

>

o

50

10

15

FIGURE 8 - STANDARD UNIJUNCTION
COMPARED TO PROGRAMMABLE UNIJUNCTION
STANDARD UNIJUNCTlOIII

ELt

R2
B2

P
N

Al

20

25

30

RBB

~

,-------,...-- +

Al + R2

Al
Al+A2

'1~---

Bl

Circuit Symbol

Typical Application

Equivalent Circuit

PROGRAMMABLE UNIJUNCTION
B2
A
E

,-------,...--+

A2
P

ABB
G

N

~

Al'+ A2

A

G

Rl

'1~Al+A2

p

Al

N
K

r--:::

~

~

VS.SUPPLY VOLTAGE (VOLTS)

I F. PEAK FORWARO CURRENT (AMPI

A

/"

V

lL"

~
o ........:: L---

Bl

V

V

~

!; 10

'"'"
~

K

Bl
Circuit Symbol

Equivalent Circuit
with External "Program"
Resistors A 1 and R2

MOTOROLA THYRISTOR DEVICE DATA
3-81

/

L

w

'"
>

=O,2~F

Cc

TA = 25 0 C

t - - - (SEE FIGURE 3)

in

B2

+100

TA, AMBIENT TEMPERATURE I'CI

Typical Application

~

35

40

•

2N6027 • 2N6028
TYPICAL PEAK CURRENT BEHAVIOR
2N6027
FIGURE 9 - EFFECT OF SUPPLY VOLTAGE AND RG

FIGURE 10 - EFFECT OF TEMPERATURE AND RG
100

10

50

5.0

1
~
a:
a:
:::>

u

'"
«

~

.......
........
........
10

«

~

3.0

.I'

20

;:

2.0

~

1.0

~

a: 5.0
a:

G

RG: 10k!l

0.5

.........

'" 2.0

~

l00k!l.l'
1.0M!l

O. 3

VS:'IOVOLTS
(SEE FIGURE 2)

........

TA 25 0 C
(SEE FIGURE 2)

RG

1.0

0.2

1.0M!)

0.2
10

5.0

15

.::--.,
~

O. 1
-50

20

.::--.,

100 kU

0.5

0.1

--

.:---.
./

10k!)

+50

+25

-25

VS. SUPPLY VOLTAGE (VOLTS)

+75

+100

TA. AMBIENT TEMPERATU RE (DC)

2N6028
FIGURE 11 - EFFECT OF SUPPLY VOLTAGE AND RG

FIGURE 12 - EFFECT OF TEMPERATURE AND RG

1.0

10

0.7
0.5



,,=30°

~
II:

"""

W

~

FIGURE 2 - RMS CURRENT DERATING

90

l!:!
w

~

U

~ ~ ........

~

600

~

'-'

~ SO

e..
w

100

::>

"

~

~

120°

1800

1~~0

a:
w
~
w

~

w

~

'-'

u

-1"

4.0

o

1.0

4.0

FIGURE 4 - POWER DISSIPATION

FIGURE 3 - POWER DISSIPATION
8.0

~ ~+--+--+-~-=~~

-1"\J1

r--------..--""T"----r--~-__r-__,

"t+
~
-1"

~

~ 6.0

II:

•

3.0

2.0

IT(RMS), RMS ON·STATE CURRENT (AMP)

S.O r---:::::c---.----,--r--,----r---,---.,

".. 6.0

de

,,=CONDUCTIO"N ANGLE

IT(AV), AVERAGE ON·STATE CURRENT (AMP)

§_
I

~

~

SO

70

3.0

2.0

f::::3 ~

180°

I-

I-

1.0

......

90

,,= CONDUCTION ANG LE

o

~UO

~~ ~~

II:

-1"

70

~ ~~ J

+---r---lr-~~-~'7~

~"-=-CO~N~D-U-CT-IO~NTA-N~G-LE~-~~-4--~~~~~9

a:
w

;=

~ 4.0 t---t---+-:--t-~'-b~s.tY'----+---+----1

~ 4.0 1---+--+--t--+--t~~,jL7"""-j;;.-L---1

II:

'"«a:w

w

~

~

;;:

~

2.0 t---+----:,.",~~~'-----+----l---+---+-___l

;; 2.0 1---+--+---,Z:I=~7I"'7"~"....q-+-

«

;;:

1.0

2.0

3.0

o~~~l-~__~__L--J.~-L~

o

4.0

1.0

IT(AV),AVERAGE ON-8TATE CURRENT (AMP)

C
:::;

«

::IE

Ei 3.0

O~F.STAjE VOL+AGE =112 Vde

w

N

2.0

II:
0

0

~

w

«
'".....
0

1.0

l""- I""-

>

a:
w

'"a:

!l!
I-

w

I-

0.7

~

--

W
II:

- --

0.5

a:

::>

10

r---.....
.......

u

a:
w

'"

!l!

0.7

i"...

.........

II:

I-

w

'"

0.5

~

'":IE
to

~

IZ

«
>

4.0

OFF·STATE VOLTA~E = 121Vde_
ALL MODES

w

N

:::;
«
::;; 2.0

ALL MODES

II:

I-

3.0

FIGURE 6- TYPICAL GATE·TRIGGER CURRENT

FIGURE 5 - TYPICAL GATE·TRIGGER VOLTAGE
3.0

2.0

IT(RMS), RMS ON·STATE CURRENT(AMP)

'"
0.3

.Ji0

-40

-20

20

40

60

SO

100

120

~

140!E

TJ,JUNCTION TEMPERATURE (OC)

0.3
-60

-40

20

-20

40

60

80

TJ, JUNCTION TEMPERATURE(OC)

MOTOROLA THYRISTOR DEVICE DATA

3-86

ItO

120

t40

2N6071,A,B thru 2N6075,A,B
FIGURE 8 - TYPICAL HOLDING CURRENT

FIGURE 7 - MAXIMUM ON-STATE CHARACTERISTICS
40

/"

30

./

20

f'

10

,

:Ii

!!

I

TJ = lllJOC

3.0

w
::;
N

2.0

"

..:

:E

a:
0

~
I-

Z

w
a:
a:

I
GATE OPEN
APPLIES TO EITHER DIRECTION

\..

1.0

::>
c.>

fF

'"Ci
z

....I

0
::t:

0.7
0.5

'"

2.0

"""" ............

.....

J

0.3
-60

-40

-20

20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE (DC)

I

z
o

TJ= 250 C

II

:Ii

.!::"
1.0

FIGURE 9 - MAXIMUM ALLOWABLE SURGE CURRENT
34

,

0.7

32

I

~ 30
!! 8 ...............
I- 2

0.5

zw

~

26

...............

..... r--...,

::>

~

0.3

o. 1
o

........

~

c.>
w

0.2

"

:i

III

::>

!.;:
Ii;

C

J

iL 5.0

~
a:

~

g

7.0

!Z

~

V

Y

3.0

24

>

I

....... .....

TJ = -40 10 +1100 C

~ 22 I - - f=60Hz

I

~ 20

I

'"

~

I,

.......... .....

•

...... ....

18
16

3.0

2.0

1.0

4.0

14
1.0

5.0

2.0

3.0

4.0

5.0

7.0

10

NUMBER OF FUll CYCLES

VrM. 0 N.sTATE VO LTAG E (VO l TS)

FIGURE 10 - THERMAL RESPONSE

~

10

c.>

5.0

0

3.0

...
z
..:
...!l...

e..

2.0

...-- ---::::: ~::

....I

~

ffi

:z:

1.0

I-

~

0.5

--

MAXIMUM

TYPICAL

-

...........-.-

in

~ 0.3
a::

": 0.2
U

.i 0.10.1 ~ ~

'"

0.2

::::-f-'"
0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0k

2.0k

5.0k

10k

I.TIME(ms)

. i J l W . I = m I l l . I I I B R•
I iIII.lllllilillllllJl._nl'.111111
•
I!!••
MOTOROLA THYRISTOR DEVICE DATA

3·87

2N6116
2N6117
2N6118

Silicon Programmable
Unijunction Transistors
· .. designed to enable the engineer to "program" unijunction characteristics such
as RBB, 71, lV, and Ip by merely selecting two resistor values. Application includes
thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be
used in special thyristor applications due to the availability of an anode gate.
•
•
•
•
•
•

PUTs
40 VOLTS - 250 mW

Programmable - RBB, 71, IV and Ip
Hermetic TO-1S Package
Low On-State Voltage - 1.5 Volts Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current - 5 nA Maximum
High Peak Output Voltage - 16 Volts Typical
Low Offset Voltage - 0.35 Volt Typical (RG = 10 k ohms)

~
CASE 22-03
(TO-18)
STYLE 13

I

-MAXIMUM RATINGS
Rating

Symbol

Valua

Unit

Repetitive Peak Forward Current
100 /LS Pulse Width, 1% Duty Cycle
20 /LS Pulse Width, 1% Duty Cycle

ITRM

Non-Repetitive Peak Forward Current
10 /LS Pulse Width

ITSM

5

Amps

IT

200
2

rnA
mArC

IG

±20

rnA

VGKF

40

Volts

Amps
1
2

DC Forward Anode Current
Derate Above 25°C
DC Gate Current
Gate to Cathode Forward Voltage
Gate to Cathode Reverse Voltage

VGKR

5

Volts

Gate to Anode Reverse Voltage

VGAR

40

Volts

Anode to Cathode Voltage

VAK

±40

Volts

Forward Power Dissipation @ TA = 25°C
Derate Above 25°C

PF
1/liJA

250
2.5

mWrC

TJ

-55 to + 125

°c

Tstg

-65 to +200

°C

Operating Junction Temperature Range
Storage Temperature Range
'Indicates JEOEC Registered Data.

MOTOROLA THYRISTOR DEVICE DATA
3-88

mW

2N6116. 2N6117. 2N6118
-ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic

Fig. No.

Offset Voltage
(VS = 10 Vdc, RG = 1 MO)

1

2N6116
2N6117
2N6118
All Types

(VS = 10 Vdc, RG = 10 k ohms)

Symbol

Min

Typ

Max

Unit

VT

0.2
0.2
0.2
0.2

0.70
0.50
0.40
0.35

1.6
0.6
0.6
0.6

Volts

-

5
75

Gate to Anode Leakage Current
(VS = 40 Vdc, TA = 25°C, Cathode Open)
(VS = 40 Vdc, TA = 75°C, Cathode Open)

-

-

1
30

Gate to Cathode Leakage Current
(VS = 40 Vdc, Anode to Cathode Shorted)

-

IGKS

-

5

50

nAdc

2,9,14

Ip

-

1.25
0.19
0.08
4
1.20
0.70

2
0.3
0.15
5
2
1

!LA

-

50
25

70
50

18
18
270
270

Peak Current
(VS = 10 Vdc, RG = 1 MO)

2N6116
2N6117
2N6118
2N6116
2N6117
2N6118

(VS = 10 Vdc, RG = 10 k ohms)

IGAO

1,4.5

Valley Current
(VS = 10 Vdc, RG = 1 MO)

IV

2N6116,2N6117
2N6118
2N6116
2N6117,2N6118

(VS = 10 Vdc, RG = 10 k ohms)

nAdc

!LA
-

Forward Voltage (IF = 50 mA Peak)

1,6

VF

-

0.8

1.5

Volts

Peak Output Voltage
(VB = 20 Vdc, Cc = 0.2I'F)

3,7

Vo

6

16

-

Volts

Pulse Voltage Rise Time
(VB = 20 Vdc, Cc = 0.2 I'F)

3

tr

-

40

80

ns

•

"Indicates JEDEC Registered Data.
FIGURE 1 - ELECTRICAL CHARACTERIZATION

R2
I

RI
,--V---,. -VS ~ RI • R2 VB
RI

IA - PROGRAMMABLE UNIJUNCTION
WITH "PROGRAM" RESISTORS
RI,ndR2

18 - EQUIVALENT TEST CIRCUIT FOR
FIGURE IA USED FOR ELECTRICAL
CHARACTERISTICS TESTING
(ALSO SEE FIGURE 2 J

FIGURE 2 - PEAK CURRENT lip) TEST CIRCUIT

IF
'GAO
IC - ELECTRICAL CHARACTERISTICS

FIGURE 3 - Va AND tr TEST CIRCUIT
+VB

ADJUST
FOR
TURN-ON ~
THRESHOLD

--=-

Y

-=-

1.0";

+V

Ip(SENSEJ
100"V"IOnA

510k

_

V8

RG " R/2

Vs "VB/2

16 k

Cc

27 k

(See Figure 1)

SCOPE

20 !l
20

PUT
UNDER
TEST

MOTOROLA THYRISTOR DEVICE DATA

3-89

2N6116 • 2N6117 .2N6118
TYPICAL VALLEY CURRENT BEHAVIOR

FIGURE 4 - EFFECT OF SUPPLY VOLTAGE

FIGURE 5 - EFFECT OF TEMPERATURE

1000

l

300

I-

z

200

'"
'"
:::>
'"
>

100

«

50

?

3D

w

j

>

1000

==

;::::::_TA - 25 0 C
(SEE FIGURE 1)

500

RG=1Dk!l=

500
b-

«

.3 200
I-

...............

~

100 kll

-

20

f...--

10

5.0

'"
'"
i3

100

~«

50

?

20

............

>

15

r-

5.0
-75

20

-25

-50

VS.SUPPL Y VOLTAGE (VOLTS)

FIGURE 6 - FORWARD VOLTAGE

til-

'"
!:;
o

~

~ 2.0

!:;

/'

1.6

V

'"!:;«
o

I-

:::>

«

~

o
0.2

0.5

Cc = 0.2 ~F

1.0

2.0

V

0

5. 0

0

5.0

--

./

/

5.0

t-:::: r-

j..---

10

15

20

25

VS. SUPPLY VD LTAG E (VO LTS)

STANDARD UNIJUNCTION
RT
E L { p:: RBB=R1+R1
Rl
R1 "=R1+R2

Cc

Bl
TYPICAL APPLICATION

EQUIVALENT CIRCUIT
PROGRAMMABLE UNIJUNCTION

A

~.
K

CIRCUIT SYMBOL

EtjP
G :: RBB=R1+R2
N
"_ Rl
P
- Rl + R2
N
Rl

Cc

K

B1
EQUIVALENT CIRCUIT
WlTH EXTERNAL "PROGRAM"
RESISTORS Rl and R2

MOTOROLA THYRISTOR DEVICE DATA
3-90

-

V

'/

B2

Bl

L

/'"

FIGURE 8 -STANDARD UNIJUNCTION
COMPARED TO PROGRAMMABLE UNIJUNCTION

CIRCUIT SYMBOL

+125

...... V

IF. PEAK FORWARD CURRENT (AMP)

'~

+100

TA = 25 0 C
(SEE FIGURE 3)

15

>
0.1

+75

+50

L

o

0.4

0.05

-

1.0JIl

20

'"

"" 0.8

u:

r--

~

~

>

+25

I-

o

~

i'-r-

>

,..-

1.2

lDDk!l==

:::---""
~

w

V

c

'"
~

25

II

~

~

r--t---

FIGURE 7 - PEAK OUTPUT VOLTAGE

TJ = 2koc-

2.4

--

TA. AMBIENT TEMPERATURE (OC)

2.8

~
c

r---.

Vs = 10 Volts
(SEE FIGU RE 1)

10

1.0 MIl_

I
10

-

RG -10 k!l

TYPICAL APPLICATION

3D

1000 pF

~

35

40

2N6116. 2N6117. 2N6118
TYPICAL PEAK CURRENT BEHAVIOR
2N6116
FIGURE 9 - EFFECT OF SUPPLY VOLTAGE AND RG

FIGURE 10 - EFFECT OF TEMPERATURE AND RG

10

100
50

7.0
5.0

1

3.0

~

2.0

'"B
~
_

~

f

100 kl1
1.0M\!

0.2

I

O. I

10

5.0

50

~
'"u=>
'"
~

r---- RG ~ 10 k!1

0.3

.3
t-

~

1.0
7
O.
O. 5

;;{

20
10

~

TA 25°C
(SEE FIGURE 2)

:::-....

VS-IOVOLTS=
(SEE FIGURE 2 ) -

r-....

20
1.0

~G~lOk"

..........

.........

lOOk!]

0.5
02

..............

0.1

1.0 M!l::

0.05

L

002
001

I

15

-)5

20

-50

+25

-25

VS. SUPPL Y VOLTAGE (VO LTS)

+50

+75

+100

+125

TA. AMBIENT TEMPERATURE (OC)

2N6117
FIGURE 11 - EFFECT OF SUPPLY VOLTAGE AND RG

FIGURE 12 - EFFECT OF TEMPERATURE AND RG

10

100
50

7.0
5.0

1

TA ~ 25 0 C
(SEE FIGURE 2)

3.0

I-

~

2.0

'"
~

10

~

01

~

0.5

-====

-

;;{

.3

~

'"
G

RG "" 10 k!~

'"
~

~

0.3

100 k!!
1

5.0

Vs~ 10 VOLTS(SEE FIG~RE 2)

=

50
20

..........

10

............

-

05

RG~IOkn

02

I"'---. ..............

01

100 kn

.-.

005

0.2

O. I

,,,-

20
10

0.02
001

a M~!
IU

15

20

-)5

10 Mf!

-50

-25

+25

+50

+)5

+100

+125

TA. AMBIENTTEMPERATURE (OCI

VS. SUPPLY VOLTAGE (VOLTS)

2N6118
FIGURE 14 - EFFECT OF TEMPERATURE AND RG

FIGURE 13 - EFFECT OF SUPPLY VOLTAGE AND RG

50

10

20

07

03

~

0.2

lOOk!!

I-

'K-

'"'"=>
u

1

RG - 10 k!!

1

50
20

0.5

~ 0.01

0.2

~

01

005

1.0M!!

003

RG - 10 k!~

100 k!l

0.02

..............
- .............
10MU~

001
000 5

0.0 I
5.0

10

--

............ r--.....

If 0 05
TA - 25°C
(SEE FIGURE 21

002

......

"-

1.0

I

'"

VS~ 10VOLTS(SEE FIGURE 2) ~

10

05

15

-)5

20

-50

-25

+25

+50

+75

+100

+125

TA. AMBIENT TEMPERATU RE (OC)

VS. SUPPl Y VOLTAGE (VOL TSI

~~~~_IIIJIIIIIIIIIIIIIII
MOTOROLA THYRISTOR DEVICE DATA
3-91

E

2N6157

thru

Triaes

2N6165

Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and military applications for the control of ac
loads in applications such as light dimmers, power supplies, heating controls,
motor controls, welding equipment and power switching systems; or wherever
full-wave, silicon gate controlled solid-state devices are needed.
• Glass Passivated Junctions and Center Gate Fire
• Isolated Stud for Ease of Assembly
• Gate Triggering Guaranteed In All 4 Quadrants

MAXIMUM RATINGS
Rating

Symbol

*Peak Repetitive Off-State Voltage
(TJ = -65 to +125°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open
*Peak Principal Voltage
2N6157,2N6160,2N6163
2N6158, 2N6161, 2N6164
2N6159,2N6162,2N6165

•

*Peak Gate Voltage

10

= 2 ItS)

*Average Gate Power
(TJ = +80°C, t = 8.3 ms)
*Peak Gate Current
'Operating Junction Temperature Range
'Storage Temperature Range

CASE 263-04
STYLE 2
2N6160-62

ITSM

250

Amps

12t

210

A 2s

PGM

20

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-6510+125

°c

Tstg

-65 to +150

°c

30

in. lb.

-

*Stud Torque
2N6160 thru 2N6165

THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
"Indicates JEOEC Registered Data.

MOTOROLA THYRISTOR DEVICE DATA
3-92

CASE 174-04
STYLE 3
2N6157-59

Volts

30
20

Circuit Fusing Considerations
(TJ = -65 to + 125°C, t = 1 to 8.3 ms)

,

Amps

IT(RMS)

*Peak Non-Repetitive Surge Current
(One Full Cycle of surge current at 60 Hz, preceded
and followed by a 30 A RMS current, TJ = + 125°C)

*Peak Gate Power
(TJ = + 80°C, Pulse Width

Unit
Volts

200
400
600
VGM

*RMS On-State Current
(TC = -65 to +85°C)
(TC = + 100°C)
Full Sine Wave, 50 to 60 Hz

Value

VORM

TRIACs
30 AMPERES RMS
200 thru 600 VOLTS

CASE 311-02
STYLE 2
2N6163-65

2N6157 thru 2N6165
ELECTRICAL CHARACTERISTICS (TC

=

2S0C unless otherwise noted.)

Characteristic

Symbol

*Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM) TJ = 2SoC
TJ = 12SoC

Min

Typ

Max

Unit

-

-

10
2

pA
mA

-

1.S

2

Volts

IDRM,IRRM

*Peak On-State Voltage (Either Direction)
(lTM = 42 A Peak, Pulse Width = 1 to 2 ms, Duty Cycle .. 2%)

VTM

Gate Trigger Current (Continuous dc), Note 1
(Main Terminal Voltage = 12 Vdc, RL = SO Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
*MT2(+), G(+); MT2(-), G(-) TC = -6SoC
*MT2(+),G(-); MT2(-),G(+)TC = -6SoC

IGT

Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = SO Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
*AII Quadrants, TC = -6SoC
*Main Terminal Voltage = Rated VDRM, RL = 10 k ohms, TJ

VGT

mA

-

lS
20
20
30

-

-

-

Volts

-

0.8
0.7
0.8S
1.1

0.2

-

-

=

+ 12SOC

Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open)
(Initiating Current = SOO rnA)
MT2(+)
MT2(-)
*Either Direction, TC = -6SoC

IH

*Turn-On Time
(Main Terminal Voltage = Rated VDRM, ITM = 42 A,
Gate Source Voltage = 12 V, RS = SO Ohms, Rise Time
Pulse Width = 2 !£s)

= 0.1

60
70
70
100
200
2S0

2
2.1
2.1
2.S
3.4

-

-

mA

-

tgt

-

dv/dt(c)

-

8
10

70
80
200

1

2

p,s

5

-

V/p,s

•

p,s,

Blocking Voltage Application Rate at Commutation,
f = 60 Hz, TC = 8SoC
On-State Conditions:
(lTM = 42 A, Pulse Width = 4 ms, di/dt = 17.S Alms)
Off-State Conditions:
(Main Terminal Voltage = Rated VDRM (200 !£S min),
Gate Source Voltage = 0 V, RS = SO 0)
"Indicates JEDEC Registered Data.
Note 1. All voltage polarities referenced to main terminal 1.

FIGURE 1 - RMS CURRENT DERATING
126

Iooo!ii

....

118

~
w
IZ:
:::J

~

110

,

III!!!

'"
5 86 <.3
....

r78 r-

........

70

o

-

",- ...._9IJO

......

~ 40

...

~

........

r-.....

"-

'"

12

16

20

24

='

«

24

>
«

16

~

:>
«

~

I

I

I

I

=j\Y
=

ii: 8.0

28

32

o~
o

V

.v V
de_ .,/ .v ./

a = 180. / V
120·, ./. ~ V
90·, ./ f' ~ V

~

10

~
~

..,.

~ ~~ ~ ~

... -

'"

~ ~ ~

4.0

""

./
".

...... 60·

~ I!e: ;::::; i-""

30·

12

20

:iIIII II'!: i-""

V
i--"'"

.v .v

I
I I

I I
8.0

16

24

28

32

IT(RMS), RMS ON·STATE CURRENT (AMP)

IT(RMS). RMS ON-STATE CURRENT (AMP)
~~"'f(_~1!i"'"':f""-'

I

W

to

I I
8.0

_I

ja
3: 32 _ a= CONDUCTION ANGLE
0
W

!"'...; t":t-..

.......

48

IZ:

.......;; :--..;: ~

CONDUCTION ANG lE

I

~
....
«

~ ~~ ~ ,.... 30·

j\Y
ja
4.0

I

= lBO"

-....;: ..;;:::0 .....

de-

Q=

a

....... ~~

g... 102
94

56

I I

....

:;
w
Iw

FIGURE 2 - POWER DISSIPATION

'¥", .,.' •...y~"",. •.1"¥.•""'~",>ii!4$C';;V.i

MOTOROLA THYRISTOR DEVICE DATA

3-93

•

2N6157 thru 2N6165
FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE

FIGURE 5 - MAXIMUM ON-8TATE CHARACTERISTICS
300

1.7

1.5

~

w

'"!:;«

1.3

0

1.1

>

'"
'"

w

.9

...'"iCw
...«

.7

'"j-

-.....

OFF-STATE

1~ 1--...£

2~L / '

1

3
4

I

I

.3
-60

-40

V
1/

"

..

20

-20

"A"'" ....

--

40

70

r---

~"'"
r
- -i=:
80

100

120

'".$

30

'"~

20

!Zw

140

w

~
~

~

ffi

FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
70

I

........

~

50

'"
~

r-=::: ~
30

'"gw

20

...zw

.......

'" r---...

...

w

1

!;c

'"

QUADRANTS

~

10
7.0
-60

~
z
;.3.
0

I

2. 0

p-......

~ ~........
.......

W t"-

~

.........

1.0

f'...

~~

O. 7
O. 5

"
-40

20

-20

7. 0

~ 5.0

1'-...

~ t--..

~¥l
4-

I0

.t:"

i"- t-...

~

iC

z

OFksTAT~ VOLiAGE = \2 V-

r--...

JJ.

1/

<.>

TJ, JUNCTION TEMPERATURE (DC)

40

60

80

O. 3

100

120

140

1.0

T.I. JUNCTION TEMPERATURE (DC)

20

!Z
w

'"'"
a

I0

cS

7. 0

'"zQ

1.8

1.4

2.2

2.6

3.0

3.4

3.8

4.2

4.6

5.0

VTM,MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

FIGURE 6 - TYPICAL HOLDING CURRENT
30

~

1//

I

::IE

-I--

60

,

50

~

L

100

~

r-- -,. ~

.5 f- QUADRANTS

~ ....../: ~ ~250C

TJ = 250C

........ ..........

--..... ----

~

200

~OLTA~E = 12 Ii-

.....

J

1

~0

FIGURE 7 - MAXIMUM ALLOWABLE SURGE CURRENT
50 0

GATE OPEN

"'-

t'...:: l'........

:z:

~5.o 3.0
-60

0

"

t""'- t-...

/

....... ,....-.....::
J'
f""oo.
.....

.......

jAIN TEtMINAIL : ; jSITIVE
I

-40

-20

r--.... r....
0

MAIN TERMINAL #1 POSITIVE

W

40

"......."- ..
..

~

~

IW

-- r---""

r-....

0

~

~

TJ" -65 to 125°C
I" 60 Hz

~

-""""" :....

0

50
1.0

m

2.0

5.0

7.0

10

20

NUMBER OF FULL CYCLES

TJ, JUNCTION TEMPERATURE (DC)

MOTOROLA THYRISTOR DEVICE DATA
3-94

50

70

100

2N6157 thru 2N6165
FIGURE 8 - TYPICAL THERMAL RESPONSE

....

~

1.0
0.7
0.5

PRESSFIT PACKAGE

a:_

~m 0.3

1-'"

~~ 0.2

i-"""'

w,,",

r-,..-,....

-STUD PACKAGE

...- ~ .-- i-"""'

u;a:

:ia: -~ o. I

~~o.o7

~ ~ 0.05
UU>

~~O.D 3

"'a:
W

-E

ZeJCltl = r(tle ReJC

'11

0.02
0.0 1
0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

II

m

II I
50

100

200

500

1k

2k

5k

t, TIME Im.1

•

MOTOROLA THYRISTOR DEVICE DATA
3-95

2N6167

thru

Silicon Controlled Rectifier

2N6170

Reverse Blocking Triode Thyristor
· .. designed for industrial and consumer applications such as power supplies;
battery chargers; temperature, motor, light and welder controls.

seRs
20 AMPERES RMS
100 thru 600 VOLTS

• Economical for a Wide Range of Uses
• High Surge Current - ITSM = 240 Amps
• Rugged Construction in Isolated Stud Package

~

AO

G

oK

CASE 311-02
STYLE 1

•

MAXIMUM RATINGS
Rating

Symbol

"Peak Repetitive Forward and Reverse Blocking Voltage, Note 1
(TJ = -40·Cto +100·C)
2N6167
2N6168
2N6169
2N6170

VORM
or
VRRM

"Non·Repetitive Peak Reverse Blocking Voltage
(t ... 5 ms)
2N6167
2N6168
2N6169
2N6170

VRSM

* Average Forward Current
(TC = -40 to +65·C)
(+85·C)

IT(AV)

*Peak Surge Current
(One cycle, 60 Hz) (TC = + 65·C)
(1.5 ms pulse @ TJ = 100·C)
Preceded and followed by no current or Voltage

ITSM

Value

Unit
Volts

100
200
400
600
Volts
150
250

450
650
Amps
13
6.5
Amps
240

560
12t

Circuit Fusing
(TJ = -40 to + 100·C) (t = 1 to 8.3 ms)
*Peak Gate Power
*Average Gate Power

235

A 2s

PGM

5

Watts

PG(AV)

0.5

Watt

"Indicates JEDEC Registered Data.

(cant.)

Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative
potential on the anode. Devices should not be tested with a constant current source for forward or reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-96

2N6167 thru 2N6170
MAXIMUM RATINGS - continued
Rating

Symbol

Value

Unit

IGFM

2

Amps

"Peak Forward Gate Current
"Operating Junction Temperature Range
"Storage Temperature Range

TJ

-40 to +100

·C

Tstg

-40 to + 150

·C

-

30

in. lb.

"Stud Torque

-THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

=

25·C unless otherwise noted.)
Symbol

Characteristic
"Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open, TC = 100·C)
2N6167
2N6168
2N6169
2N6170
(Rated VORM or VRRM, gate open, TC = 25·C)
All Devices

*TC
TC

Gate Trigger Voltage (Continuous dc)
(VO = 12 V, Rl = 240)

"TC
TC

Holding Current
(VO = 12 V, gate open, IT

*TC
TC

= 200 mAl

-

Turn-Oft Time
(lTM = 10A,IR
(lTM = 10 A. IR

= lOA)
= 10 A, TJ =

Unit

1
1
1
1

-

-

10

jLA

-

1.5

1.7

Volts

IGT

-

-

VGT
IH
ton

=

2
2.5
3
4

VTM

= -40·C
= 25·C
= -40·C
= 25·C
= -40·C
= 25·C

'Turn-On Time (td + t r )
(lTM = 41 Adc, Vo = Rated VORM,
IGT = 200 mAdc, Rise Time"" 0.05 p.s, Pulse Width

Max

mA

-

"Peak Forward "On" Voltage
(lTM = 41 A Peak)
Gate Trigger Current (Continuous dc)
(VO = 12 V, Rl = 240)

Typ

Min

IORM,IRRM

2.1

75
40

mA

-

-

0.8
0.63

2.5
1.6

Volts
mA

-

-

90

-

3.5

50

-

-

1

•

p.s

10 p.s)

toft
100·C)

Forward Voltage Application Rate
(TJ = 100·C, Vo = Rated VORM)

dv/dt

-

-

25
40

-

50

p.s

-

V/p.s

"Indicates JEDEC Registered Data.
FIGURE 2 - POWER DISSIPATION

FIGURE 1 - AVERAGE CURRENT DERATING
100

~a:

95

I~ ~

!;( 90
~

1\ \~, r0
\ \\1\.'\\

85

>-

~

«
u

80

~
:;

75

~

70
Q'

=

300

5
60

o

2.0

4.0

GOo 900

6.0

8.0

./
de

24

........

---i

~
w

-

Ct ,---

'"

ffi

0= CONOUCTION ANGLE

""-

'" "-

1800

10

~

-It
"'-

~

"- r-....

'\.

12

I

14

GOo
./ . /
0
/
r---- _.=30/ V/
./ V
12
~

16

il I , / / . /

/. . /
I 'l"""': V-

~ 8.0

"

16

«

:;

" r-....
18

;; 4. D

«
a::
20

./

900

::>

t'...

./

./

20

:;

de

./

1800

a:

\ \ 1\

:;

U
>-

>>~

\~ ~

::>

~

u;

28

I~

-

.= CONDUCTION ANGLE
I
TJ~

//A ~

WOOC f---

/.,,-

0 ~

o

2.0

4.0

6.0

8.0

10

12

14

16

ITlAV).AVERAGE FORWARD CURRENT lAMP)

lTIAV).AVERAGE FORWARD CURRENT lAMP)

MOTOROLA THYRISTOR DEVICE DATA
3-97

-

~.

18

20

2N6167 thru 2N6170
FIGURE 3 - MAXIMUM ON-8TATE
CHARACTERISTICS
300

. . .v

200

V ....... ~
V

TJ

100

=25°

L~ V';OOOC

FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT

-

500

I-

0:

r;CLEtr\

'"""

;: 300

~

'"

~ 200

r- r- t-1'--

w

70

g;!
~

/

IV

0

""

""~ 100

III

'"

rt

0

E

I

0

~

TJ +100 0 C

r- t-r-

1= 60 Hz
70

I--fUR~E

50
1.0

II

-

2.0

"I, ,~
ISPjREC 0 1 0

r

3.0

~NNr~LOW10 BI RATrO C~R~~Tl

5.0

7.0

10

20

50

30

70 100

NUMBER OF CYCLES
0
0

FIGURE 5 - CHARACTERISTICS AND
SYMBOLS

0
+1

0

2. 0

1. 0
.7

-V

_

REVERSE
BLOCKING
REGION
IH-

~~~;I;:I:D;R~M?f~~~~~;:~
+V

IRRM

o.5
O.3
0.4

1.2

2.8

2.0

4.4

3.6

5.2

IVDRM

FORWARD
BLOCKING
REGION

REVERSE
AVALANCHE
REGION

6.0

FORWARD
BREAKOVER
POINT
.•

',VT

-I

vr,lNSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

FIGURE 6 - THERMAL RESPONSE

~

1.0
O. 7
O. 5

"'~ffi

O.3

-'

t-N

-

I-

~~ O.2

w'"

in'"

---

~~

O. 1
~~O.O7
~~ 0.0 5

....~~O.O
'"
::;0::

-r

......

+-

3

Z8Jf!t)

i '(i) ~ ~81~

0.02
0.0 1
0.05

I I
0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

MOTOROLA THYRISTOR DEVICE DATA
3-98

200

500

1k

2k

5k

2N6167 thru 2N6170
FIGURE 7 - TYPICAL GATE TRIGGER
CURRENT

FIGURE 8 - TYPICAL GATE TRIGGER
VOLTAGE

20

<
..5
I-

~

10

1.0

I"---..

a:
a:

r--..

«
'"

..........

~ 7.0

~

o

............

::=i

'"'"ii:

~ 0.9
o
~ 0.8

OF~.STATk VOL T~GE = 12 V

5.0

..........

w

'"'"
~

.......

I-

w

«

'"5

.............
............
............

0.7

............

>
~ 0.6

..............

I-

OFF~TATEIVOlT~GE =d V -

..........

I'-...

I'-.....

0.5

~

3.0

'" 0.4

;f

2.0
-40

-20

20

40

60

80

100

120

140

0.3
-60

-40

20

-20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE IOC)

TJ, JUNCTION TEMPERATURE IOC)

FIGURE 9 - TYPICAL HOLDING CURRENT
20

OFF~TATEIVOLT~GE = J

V-

1

10

r--.... r-.....

IZ

t-...

..........

w
a: 7.0
a:

..........

:::>

<.>

.......

~ 5.0

"

§
o

:r

:- 3.0
2.0
-60

-40

-20

20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE IOC)

MOTOROLA THYRISTOR DEVICE DATA
3-99

•

2N6237
thru
2N6241

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
· •. PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.

seRs
4 AMPERES RMS
50 thru 600 VOLTS

•
•
•
•

Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Recommended Electrical Replacement for C 106

•

CASE 77-05
(TO·225AA)

STYLE 2

MAXIMUM RATINGS (TC = 110·C unless otherwise noted.)
Rating

Symbol

*Repetitive Peak Forward and Reverse Blocking Voltage, Note 1
(1/2 Sine Wave)
2N6237
(RGK = 1000 ohms, TC = -40 to +110·C)
2N6238
2N6239
2N624O
2N6241

VORM
or
VRRM

*Non-Repetitive Peak Reverse Blocking Voltage
(1/2 Sine Wave, RGK = 1000 ohms,
TC= -40 to + 110·C)

VRSM

Value

Unit
Volts

50
100
200
400

600

2N6237
2N6238
2N6239
2N6240
2N6241

Volts
100
150
250
450
650

*Average On-State Current
(TC = -40 to +90·C)
(Tc = + 10eoC)

IT(AV)

*Surge On-State Current
(1/2 Sine Wave, 60 Hz, TC = +90·C)
(1/2 Sine Wave, 1.5 ms, TC = +9eoC)

ITSM

Amps
2.6
1.6
Amps
25
35

Circuit Fusing
(TC = -40 to +110·C, t = 1 to 8.3 ms)
*Peak Gate Power
(Pulse Width = 10 I'-S, TC = 90·C)

12t

2.6

A 2s

PGM

0.5

Watt

*Indicates JEDEC Registered Data.
(cont.)
Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative
potential on the anode. Devices should not be tested with a constant current source for forward or reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-100

2N6237 thru 2N6241
MAXIMUM RATINGS - continued (TC

=

110·C unless otherwise noted.)
Symbol

Value

Unit

PG(AV)

0.1

Watt

Peak Forward Gate Current

IGM

0.2

Amp

Peak Reverse Gate Voltage

VRGM

6

Volts
·C

Rating
*Average Gate Power
(t = 8.3 ms, TC = SO·C)

*Operating Junction Temperature Range
*Storage Temperature Range

TJ

-40 to +110

Tstg

-40 to +150

·C

-

6

in. lb.

Mounting Torque, Note 1

THERMAL CHARACTERISTICS
Symbol

Characteristic
*Thermal Resistance, Junction to Case

R6JC

Thermal Resistance Junction to Ambient

R6JA

Min

Max

Unit

-

3

·CIW

75

·CIW

'Indicates JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS (TC

=

25·C and RGK = 1000 ohms unless otherwise noted.)
Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TC = 25·C
TC = 110·C
*Peak Forward "On" Voltage
(lTM = 8.2 A Peak, Pulse Width

=

Min

IORM,IRRM

-

-

VTM
1 to 2 ms, 2% Duty Cycle)

Typ

Max

Unit

-

10
200

p.A
p.A

2.2

Volts

200
500

-

Gate Trigger Current (Continuous dc), Note 2
(VAK = 12 Vdc, RL = 24 Ohms)
*(VAK = 12 Vdc, RL = 24 Ohms, TC = -40·C)

IGT

Gate Trigger Voltage (Continuous dc)
(Source Voltage = 12 V, RS = 50 Ohms)
*(VAK = 12 Vdc, RL = 24 Ohms, TC = -40·C)

VGT

-

-

Gate Non-Trigger Voltage
(VAK = Rated VORM, RL

VGO

0.2

-

=

=

100 Ohms, TC

Holding Current
(VAK = 12 Vdc, IGT = 2 mAl
*(lnitiating On-State Current = 200 mAl

-

1

Volts

Volts

110·C)
IH

TC
TC

p.A

-

-

5
10

tgt

-

2

-

pos

dv/dt

-

10

-

V/pos

= 25·C
= -40·C

*Total Turn-On Time
(Source Voltage = 12 V, RS = 6 k Ohms)
(lTM = 8.2 A, IGT = 2 mA, Rated VORM)
(Rise Time = 20 ns, Pulse Width = 10 pos)
Forward Voltage Application Rate
(Vo = Rated VORM, TC = 110·C)

mA

•

'Indicates JEDEC Registered Data.
Notes: 1. Torque rating applies with use of compression washer (B52200F006 or equivalent). Mounting torque in excess of 6 in. lb. does not
appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN-209 B)
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed + 200"C. For optimum
results an activated flux (oxide removing) is recommended.
2. Measurement does not include RGK current.

,.1••••!IISiIIIIIMIIIIIIIIIII:••IIIIIII;::I!'I""
..

.1F7777
••

MOTOROLA THYRISTOR DEVICE DATA
3-101

2N6237 thru 2N6241
FIGURE 1 - MAXIMUM CASE TEMPERATURE

~

FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE

110

110-.---,----,----,----,----.----,----.---,

w

a:
=>

..
I-

a:
~

~

w

~

..'"
..j
W

...J

s:

.'"'"'"
=>

x

U

I-

iTlAV). AVERAGE FORWARO CURRENT (AMP)

iT(AV).AVERAGE FORWARO CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-102

2N6342
thru
2N6349

Triaes
Silicon Bidirectional Triode Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with
positive or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowa-tt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
• For 400 Hz Operation, Consult Factory
• 12 Ampere Devices Available as 2N6342A thru 2N6349A

TRIAC.
8 AMPERES RMS
SO thru 800 VOLTS

~G

o

MT2

MTI

MAXIMUM RATINGS
Rating
*Peak Repetitive Off-State Voltage
(TJ = -40 to + 100°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open

Symbol

2N6346
2N6347
2N6348
2N6349

Unit
Volts

VORM
2N6342,
2N6343,
2N6344,
2N6345,

(TC = + 80°C)
(TC = + 90°C)

*RMS On-State Current
Full Cycle Sine Wave 50 to 60 Hz

Value

200
400
600
800
'T(RMS)

8

Amps

4

*Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = + 80°C)
Preceded and followed by 10 Rated Current
Circuit Fusing
(TJ = -40 to + 100°C, t = 1 to 8.3 ms)
*Peak Gate Power (TC = +80°C, Pulse Width = 2 p.s)

ITSM

100

Amps

12t

40

A 2s
Watts

PGM

20

PG(AV)

0.5

Watt

*Peak Gate Current

IGM

2

Amps

*Peak Gate Voltage

VGM

10

Volts

TJ

-40 to + 125

OC

Tstg

-40 to +150

OC

*Average Gate Power (TC = +SOOC, t = 8.3 ms)

*Operating Junction Temperature Range
*Storage Temperature Range

MOTOROLA THYRISTOR DEVICE DATA
3-103

o

2N6342 thru 2N6349
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25·C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)
Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25·C
TJ = 100·C

•

IORM,IRRM

*Peak On-State Voltage
(lTM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle.;; 2%)

VTM

Gate Trigger Current (Continuous de)
(VO = 12 Vdc, RL = 100 Ohms)
(Minimum Gate Pulse Width = 2 p.s)
MT2( +), G( + ) All Types
MT2( + ), G( -) 2N6346 thru 49
MT2( - ), G( - ) All Types
MT2( -), G( +) 2N6346 thru 49
*MT2( +), G( +); MT2( -), G( -) TC = -40·C All Types
*MT2( +), G( -); MT2( -), G( + lTC = -WC 2N6346 thru 49

IGT

Gate Trigger Voltage (Continuous de)
(VO = 12 Vdc, RL = 100 Ohms)
(Minimum Gate Pulse Width = 2 p.s)
MT2( +), G( + ) All Types
MT2( +), G( -) 2N6346 thru 49
MT2( -), G( - ) All Types
MT2( -), G( +) 2N6346 thru 49
*MT2( +), G( +); MT2( -), G( -) TC = -40·C All Types
*MT2( +), G( -); MT2( -), G( +) TC = -40·C 2N6346 thru 49
(VO = Rated VORM, RL = 10 k Ohms, TJ = 100·C)
*MT2( +), G( +); MT2( -), G( -) All Types
*MT2( +), G( -); MT2( -), G( -) 2N6346 thru 49

VGT

*Holding Current
(VO = 12 Vdc, Gate Open)
(IT = 200 mAl

Min

Typ

Max

Unit

-

-

10
2

mA

1.3

1.55

Volts

-

mA

-

-

50
75
50
75
100
125

-

0.9
0.9
1.1
1.4

-

2
2.5
2
2.5
2.5
3

0.2
0.2

-

-

6

-

40
75

tgt

-

1.5

2

p's

dv/dt(c)

-

5

-

V/p.s

IH

Critical Rate of Rise of Commutation Voltage
(Vo = Rated VORM, ITM = 11 A, Commutating dildt = 4.3 Alms,
Gate Unenergized, TC = BO·C)

12
12
20
35

Volts

TC = 25·C
*TC = -40·C

*Turn-On Time
(VO = Rated VORM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1 P.s, Pulse Width = 2 p.s)

I-IA

mA

"Indicates JEDEC Registered Data.

FIGURE 1 - RMS CURRENT DERATING
100 ....=-,-~--,r-·-,-----r--,,---,--...,

FIGURE 2 - ON-STATE POWER DISSIPATION
10

......«

;;;

~
w
...:::>'"

96

'"

~ 6.0

« 92

~

ffi

w

0.

~

...

lJj

-J.

CONDUCTION ANGLE

ffi 4.0

>
«

-J.

84

~
.=

«
'"

~
.=

88

«
u

.....;

8.0

~

s

~ 2.0t--+-~~~p...<''':;;;.'''''''--+---f--+--l

CONDUCTION ANGLE

80
0

4.0

5.0

ITIRMS). RMS ON·STATE CURRENT lAMP)

ITIRMS). RMS ON-STATE CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-104

2N6342 thru 2N6349
FIGURE 4 - TYPICAL GATE TRIGGER CURRENT

FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE
1.8

!S

O+STA~E VOLiAGE = \2 v-

1.6

I

~ 1.4
w

'"~

1.2

..........

g

~

a: 1.0
w

'"
~

:-;;:

.......... J

"""""-

./' -..;::

0-

w

5 0.6 I- QUADI RANTSI 12----s.
3~

i- 0.4

I

-60

-

.........

:--::::::

1.......... -

0.8

/

~

a
'"

-20

20

...0:

!;(

.........

~

10 QUADRANT

w

........

OFrF.STA~E VOL~AGE .112 V-

r--.....

......

r-....: r--.....

to

I'.......

f"'... ~ r-.....

l"-

~

-...::;::::

20
40
60
80
TJ, JUNCTION TEMPERATURE (DC)

-40

r-....

to
to

I?i . . s

r.::: ~

l?~ 1.0

I

I

0

~

dUAORiNT4

...........

f"'... ........

«

.s...

I

...........

0

100

120

......
I

5.0
-60

140

-40

............

-20

20
40
60
80
TJ, JUNCTION TEMPERATURE (DC)

20

...... ......-

50

#

V ......

,

0

......-

!...

II

TJ= 1000C

~

140

GATE OPEN
MAIN TERMINAL #1
POSITIVE

.........

.............

=>
<.>

/

~ 5.0

§

.......

o

prSITIV~

%

~. 3.0

2.0
-60

'1

-40

-20

r-....

............

MAIN TERMINAL #2

11

0

......

.........

7.0

H

0

10

w

250C

0

~

~ ....... r---...

z

~

I

1/

~

~

30

120

FIGURE 6 - TYPICAL HOLDING CURRENT

FIGURE 5 - ON-STATE CHARACTERISTICS
100
0

100

"- ............

20
40
60
80
TJ, JUNCTION TEMPERATURE (DC)

120 140

100

0

I

0

FIGURE 7 - MAXIMUM NON·REPETITIVE SURGE CURRENT

II

100

~

I I--l ......
r-

0::

:;

!! 80

:E

O.7

...z

O.5

'"
'"
=>
<.>

(\'

w

.1::'

60

V

w

to

O. 3

'"
;;:

O.2

...'";:5

~

.t'
O. 1
0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

'r\

.....

,

40

I-CYCLE -

TJ = 1000C
20 I---- f ~ 60 Hz
f---

I

sure IS p,ejded anj IOlired jV Ted cU'ient

o
1.0

2.0

VTM,INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

MOTOROLA THYRISTOR DEVICE DATA
3-105

--

--

3.0
NUMBER OF CYCLES

5.0

7.0

10

•

2N6342 thru 2N6349
FIGURE 8 - TYPICAL THERMAL RESPONSE
10

..

w

~

O.S

l;;

:z'" -

-,0

.......-

0.2

~~

~~
........ '"0

01

....-

-

.....
ZOJC(I)

=r(l) -

ROJe

~ ~O.05

..'"

in

z

+-

0.02

~

0.0 1
0.1

0.2

0.5

1.0

2.0

5.0

20

50

100

200

I.TIME 1m,)

•

MOTOROLA THYRISTOR DEVICE DATA

3·106

500

1.0 k

2.0 k

5.0 k

10 k

2N6342A
thru

Triacs

2N6349A

Silicon Bidirectional Triode Thyristors
• •• designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with
positive or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Two Modes (2N6342A, 2N6343A, 2N6344A,
2N6345A) or Four Modes (2N6346A, 2N6347A, 2N6348A, 2N6349A)
• For 400 Hz Operation, Consult Factory
• 8 Ampere Devices Available as 2N6342 thru 2N6349

TRIACs
12 AMPERES RMS
200 thru 800 VOLTS

~

o
MT2

MT11
0 .

G

MAXIMUM RATINGS
Rating
*Peak Repetitive Off-State Voltage
(TJ= -40 to + 110"C)
112 Sine Wave 50 to 60 Hz, Gate Open

. *RMS On-State Current
(Full Cycle Sine Wave 50 to 60 Hz)

Symbol

Value

VORM
2N6342A, 2N6346A
2N6343A, 2N6347A
2N6344A,2N6348A
2N6345A, 2N6349A
(TC = + 60°C)
(TC = + 95°C)

*Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = +8O"C)
Preceded and Followed by Rated Current
Circuit Fusing
(TJ = -40 to +110"C,t = 1 toS.3ms)
*Peak Gate Power (TC = +SO·C, Pulse Width = 2 pAl)

Unit
Volts

200

400
600
SOO
IT(RMS)

12
6

Amps

ITSM

120

Amps

12t

59

A 2s
Watts

PGM

20

PG(AV)

0.5

Watt

*Peak Gate Current

IGM

2

Amps

*Peak Gate Voltage

VGM

±10

Volts

TJ

-40 to +125

°c

Tstll

-40 to +150

"C

*Average Gate Power (TC = +80·C, t = S.3 ms)

*Operating Junction Temperature Range
*Storage Temperature Range
·Indicates JEDEC Registered Data.

MOTOROLA THYRISTOR DEVICE DATA
3-107

•

2N6342A thru 2N6349A
THERMAL CHARACTERISTICS
CharactarJatic
*Thermal Resistance. Junction to Case

ELECTRICAL CHARACTERISTICS

(TC = 25°C. unless otherwise noted.)

Symbol

Characteristic
*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM. gate open) TJ = 25°C
TJ = 1100c

•

IORM.IRRM

*Peak On-Stete Voltage (Either Oirectionl
(lTM = 17 A Peak; Pulsa Width = 1 to 2 ms. Duty Cycle ... 2%1

VTM

Gete Trigger Current (Continuous dcl
(Vo = 12 Vdc. RL = 1000hmsl
MT2( + I. G( + I All Types
MT2( + I. G( -I 2N6346A thru 2N6349A
MT2( -I. G( - ) All Types
MT2( -). G( + I 2N6346A thru 2N6349A
*MT2( +). G( + I; MT2( -I. G( -I TC = -4O"C All Types
*MT2( +). G( -); MT2( -I. G( + I TC = -40°C 2N6346A thru 2N6349A

IGT

Gate Trigger Voltage (Continuous dcl
(VO = 12 Vdc. RL = 1000hmsl
MT2( + I. G( + I All Types
MT2( + I. G( -I 2N6346A thru 2N6349A
MT2( -I. G( -I All Types
MT2( -I. G( + I 2N6346A thru 2N6349A
*MT2( + I. G( + I; MT2( -I. G( -I TC = -40°C All Types
*MT2( + I. G( -I; MT2( -I. G( + I TC = -40°C 2N6346A thru 2N6349A
(VO = Rated VORM. RL = 10 k ohms. TJ = 100°CI
*MT2( + I. G( + I; MT2( -I. G( -I All Types
*MT2( + I. G( -I; MT2( -I. G( -I 2N6346A thru 2N6349A

VGT

Holding Current (Either Oirectionl
(VO = 12 Vdc. Gate Openl
(IT = 200 mAl

Min

Typ

Max

Unit

-

-

10
2

pA
mA

-

1.3

1.75

Volts
mA

-

6
6
10
25

-

Volts

-

0.9
0.9
1.1
1.4

IH

mA

6

-

40
75

tgt

-

1.5

2

p,s

dv/dt(cl

-

5

-

VII'S

TC = 25°C
*TC = -40°C

Critical Rate of Rise of Commutation Voltage
(VO = Rated VORM. ITM = 17 A. Commutating dildt = 6.5 Alms.
Gate Unenergized. TC = SOOCI

2
2.5
2
2.5
2.5
3

-

0.2
0.2

*Turn-On Time
(VO = Rated VORM. ITM = 17 A. IGT = 120 mA.
Rise Time = 0.1 p,s. Pulse WicUh = 2 I'sl

50
75
50
75
100
125

*Indicates JEDEC Registered Data.

FIGURE 1 - RMS CURRENT DERATING
110

G

~

w

..... ~ ~

~O.

~ ~ ~ ~ Ij

100

:>

!;;:
a:
~

:IE

90

~

~

u BO

...

-lAy
_

in

60·

~ ~~~

a:

...w

900

"- ['...; ~ '"
~~ .J....

de

o

2.0

4.0

6.0

B.O

10

I'...

w

12

~

180"

12

16

-

0

lJ\J=
-Ja

TJ=110·C

'"

w

>
<

~

~~

,,;

ITIRMS). RMS ON-STATE CURRENT. lAMP)

4.0

o
o

~ .......A "/ V
[
~ / ;/"V r\. V~ ~ V 1(' ~ ;~(JO

a-CONDUCTION ANGLE

w

14

~V V
~ ~ v: V"

.Ja

< B.O
a:
~

l/.: ~

d.

... -

120·-1--

f'- '~ ~ ~
"~ "- ~

.Ja

t:
~

a:

"-I' ~ ~ ~ l'....

a-CONOUCTION ANGLE

70

FIGURE 2 - ONoSTATE POWER DISSIPATION
20

~ ~~
2.0

4.0

~~~~

'l ::;..s

&.0

80"

70.

1200

a = 31)0

B.O

10

ITIRMS). RMS ON·STATE CURRENT lAMp)

MOTOROLA THYRISTOR DEVICE DATA
3-108

12

14

2N6342A thru 2N6349A
FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE

FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
50

1.8

~

1.6

~1.4

o
>

~

ffi 1.0

'"'"iC
....
w

:--..,

1.2

0.8

5 0.6

..........

a
>-~

~

3-;'

........ r-..

«

1

-60

-40

20
40
60
80
-20 TJ. JUNCTION TEMPERATURE IOC)

100

120

4-

~

,-~

30

/

LO

~

'"

~

=

100D C

10

140

,g

10

~

1.0

....z

t"-. ~ ~

......

........

........

~

::>

'-'

..........

/

~ 5.0

§

MAIN TERMINAL ,,2
PfSITIVIE

o

:r

25D C

!/MAIN TERMINAL ,,1
POSITIVE

:=' 3.0

r-....
...............

........

..........

........

I

II

7.0

III

1::i
~

I

120

GATE OPEN

i"-..
;{

hy

/
TJ

100

FIGURE 6 - TYPICAL HOLOING CURRENT

.......

50

..........
20
40
60
80
TJ. JUNCTION TEMPERATURE IOC)

20

.......

.L"

70

-20

......

......

I
-40

FIGURE 5 - ON.sTATE CHARACTERISTICS
100

......... ::>.

~ I"-:...

QUADRANT :

5.0
-60

140

I'.....

I'::: >< ~? R:K

10

1?~ 7.0

!-

-...........
~

'"

...;:::::::: ~

........

.............

i'--

'"a:

........

..........

........

S!

~

/ ' [""".....;;::

20

~

.......... .;I
..........

.........

..........

a:

/

~

r-.....

>--

JUAOR~NT4

""""""
11/~
f- QUADRANTS 2 ...............

;f 0.4

E 30
~

OF1F.STAiE VOLiAG,E .112 V-

..........

;{

I
i

-...........

w

'"~

:"--

OF1F-STAiE VOLtAGE = \2 V'(
"(

2.0
-60

~I

5.0

-40

-20

II

~

20
40
60
80
TJ. JUNCTION TEMPERATURE IOC)

100

120 140

w

~

3.0

I

z

o
"'.
::>
o

r

2.0

w

z

«
....
z

~

1.0

'"
.!::-

D.

FIGURE 7 - MAXIMUM NON,REPETITIVE SURGE CURRENT
100

---J.
I r--l

~

7

....'"
z

0.5

::>

::!:

~

W
0:
0:

80

60

0.2

...;1i

40

-- r-

,-CYCLE -

""

='
E

:--I-

\J

0:

1i:

'r\

(\1

'-'
w
co

0.3

D. 1
0.4

•

l
20 -

-

TJ

=100D C

f~60Hz

I

surDe is prejded an, fOIiOred rv ralted currnt

o
0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

10

20

VTM. MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE IVOLTS)

3.0

5.0

7.0

10

NUMBE R OF CYCLES

~nj~~~~~:~'~~~~~""RM""~~""".
~'Bo:~¥it:~~~"i0i,J>~

MOTOROLA THYRISTOR DEVICE DATA
3-109

2N6342A thru 2N6349A
FIGURE 8 - TYPICAL THERMAL RESPONSE
1.0
w

~

o.s

~

'"

iii..: -

0.2

~~
ffi ~

0.1

..... 0

....:r:<
..:
.... 0
::'i

~

--

ZOJC(tI

= r(.) -

ROJC

~0.05

in

z

«
..:
t-

0.02

~

0.0 1
0.1

0.2

0.5

1.0

2.0

5.0

20

50

100

200

'.TlME (m,)

•

MOTOROLA THYRISTOR DEVICE DATA
3-110

500

1.0 k

2.0 k

5.0 k

10 k

2N6394
thru
2N6399

Silicon Controlled
Rectifiers
Reverse Blocking Triode Thyristors
· .. designed primarily for half-wave ac control applications, such as motor
controls, heating controls and power supplies.
• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts

SCRs
12 AMPERES RMS
50 thru 800 VOLTS

Q

AO

.("

oK

•

*MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Forward and Reverse Blocking Voltage
(TJ = -40 to 125·C)
2N6394
2N6395
2N6396
2N6397
2N6398
2N6399
RMS On-State Current
(A" Conduction Angles)

TC

VRRM
or
VORM

+ 125·C, t =

Unit
Volts

50
100
200
400

600
800

= 90·C

Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60 Hz, TJ = 125"C)
Circuit Fusing
(TJ = -40 to

Value

IT(RMS)

12

Amps

ITSM

100

Amps

12t

40

A 2s

PGM

20

Watts

PG(AV)

0.5

Watt

1 to 8.3 ms)

Forward Peak Power
Forward Average Gate Power
*Indicates JEDEC Registered Data.

(cont.)

MOTOROLA THYRISTOR DEVICE DATA
3-111

2N6394 thru 2N6399
-MAXIMUM RATlNGS - continued
RatIng

Symbol

Value

Unit

IGM

2

Amps

TJ

-40 to +125

·C

Tstg

-40 to +150

·C

Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case

ELECTRICAL CHARACTERISTICS

(TC = 25"C unless otherwise noted.)

Characteristic

Symbol

*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25·C
TJ = 125·C

•

IORM.IRRM

Min

Typ

Max

Unit

-

10
2

mA

1.7

2.2

Volts
mA

*Forward "On" Voltage
(lTM = 24 A Peak)

VTM

-

*Gate Trigger Current (Continuous de)
(VO = 12 Vde. RL = 100 Ohms)

IGT

-

5

30

*Gate Trigger Voltage (Continuous de)
(VO = 12 Vde. RL = 100 Ohms)
(VO = Rated VORM. RL = 100 Ohms. TJ = 125·C)

VGT
VGO

-

0.7

1.5

IIA

Volts

0.2

-

*Holding Current
(VO = 12 Vde)

IH

-

6

40

mA

Turn-On Time
(lTM = 12 A. IGT = 40 mAde. Vo = Rated VORM)

tgt

-

1

2

ps

Turn-Off Time (VO = Rated VORM)
(lTM = 12A.IR = 12A)
(lTM = 12 A.IR = 12 A. TJ = 125·C)

tq

-

15
35

-

Critical Rate-of-Rise of Off-State Voltage Exponential
(VO = Rated VORM. TJ = 125·C)

dvldt

-

50

ps

Vips

"Indicates JEDEC Registered Data.

FIGURE 2 - MAXIMUM ON-8TATE POWER DISSIPATION

FIGURE 1 - CURRENT DERATING

u

~

130r---,----,----,----,----,----,----r---,

II:

~ 125~~~--~----+----+----+-II:

w

~ 120~~~~~~--+---_+----+--

w
....

A-10/1-

20

0/ = CONOUCTION

«

~

ANGLE

115~--~~~~~~~-+----+---~----~--~

II:
W

~ IIO~--~--~~~~~~~~~--~----~--~

~
w

w

~

...«

~ 105r----r--~~\_+-~~._~~--~~--r---~

~

:E

100

--- 0/
14 --

A-10/1-

18

i!!....
~

'"ffi«
>

16

12
10
8.0

~ 6.0

r----r--~------'\t_--_l'_~+----'~----p...<::

'>

:::>

~ 95~--~--~----~--_+-+--~r-~--~~--~
«

:E

~ 900~--~1.~0--~2.~0--~3.0~--~L-~~~~--~~~8.·0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)

~ 4.0

2.0

=

CONDUCTION
ANGLE

900
a 30"

~"

V

/'

,/

~

/ / /' ./
~ L~ L . /
V/ V/ V
TJ'" 125"C
~~V

~~

o ~~
1.0
o

2.0
3.0
4.0
5.0
6.0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-112

180"
/-

7.0

8.0

2N6394 thru 2N6399
FIGURE 3 - ON-sTATE CHARACTERISTICS

100

10

_ 95

50

,

30

ffi
!5

/. V

""~

10

"""'" too...

80

65
60

.......

....

r-- SURGE IS PRJCEOEO AND FOLLOWEO
BY ,ATEO C~RRENT

I

2.0

1.0

w

~

.......

~ i

50

0::

(.) 5.0

Z

I"--.

55
7.0

:::>

o

........

TJ = 125 DC
f=6r HZ

~ 70

~

f". ~

15

0::

:li
...'"

fth

~

85

0::

il

Ii:

~

~ 90

/'
V ~250C

lfil'

20

............"

...

./

TJ=25DC

~
lz

FIGURE 4 - MAXIMUM NON·REPETITIVE SURGE CURRENT

1111

3.0

4.0

6.0

8.0

10

NUMBER OF CYCLES

3.0

en

:::>

~ 2.0
Z

;:
Z

~
~

1.0

:!ii'

.1::' 0.7

0.5

0.3

•

0.2

O. 10.4

1.2
2.0
2.8
3.6
4.4
5.2
1ITH,INSTANTANEOUS ON-STATE VOLTAGE (VOLTSI

6.0

FIGURE 5 - THERMAL RESPONSE

c

~

1.0
~ 0.7
~ 0.5
o
~ o. 3

""~

~

0.2

V

~

O. I
~ 0.07
~ 0.05
w
:z:
.... 0.03 . /

j...-

.....

ZOJC(t1 = ROJC • r(tl

lz

~ 0.02

~

....

-;i
"l:'

0.0 I

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20 30
50
t, TIME (msl

100

200

300

SOD

1.0 k

2.0 k 3.0 k 5.0 k

10 k

_.mil4HBlt
_ _I_ _;.~
••I.II.I••Il.II•••i1.111I1••II•••••••IIII.r•••••n.n.II7•••
__
MOTOROLA THYRISTOR DEVICE DATA
3-113

2N6394 thr~ 2N6399
TYPICAL CHARACTERISTICS

FIGURE 6 - PULSE TRIGGER CURRENT

FIGURE 7 - GATE TRIGGER CURRENT

300

111111

200

c

II I

<

\

~

100
70
a:
0::
50
~
w

....
<

'"<

""w

E

~

~

....
z

............

I'r-.....

w

30 \.

........

1'\

20

::;

1

~

~

TJ = -400C

.........

~

OF~-STAT~ VOL~AGE = \2 V - r--

2

0::

U

0::

r-.....

~

~ 0.7

I"-

~, 10

....

:::;
;;
<>

zw

u

~

W

N

~+-!+f++++--+-+-f- OFF-STATE VOLTAGE = 12 V t - -

...........

'"a:

~

~ 0.6
~

7

~

'"....

~

'

3~~~~~~~~~~~~~~WU~~~

0.2

0.5

5

10

20

60

100

200

~ 0.3

-40

40

FIGURE 8 - GATE TRIGGER VOLTAGE
1.1

~
<>

1.0

~

0.9

~

0.8

•

w

~

'"t;

160

I

I

I

OFF·STATE VOLTAGE· 12 V

20

1
....

........

~

a:

........

aa:

........

0.7

'"z

........
...........

0.6

~

O. 6

10

rr-........
.

5

7. 0

i

6. 0

.....

""" "

<>
:z:

............

.......
........

............

>

0.4
,60

0

OFlsTAT~ VOLT~GE = 1~ V -

~

g
....a:

120

FIGURE 9 - HOLDING CURRENT

2:-

~

80

TJ, JUNCTION TEMPERATURE (DC)

PULSE WIDTH (ps)

-40

-20

20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE IDC)

3. 0
-60

-40

20

-20

40

~

60

--

80

TJ, JUNCTION TEMPERATURE IDC)

MOTOROLA THYRISTOR DEVICE DATA
3-114

i"-

100

120

140

2N6400

Silicon Controlled
Rectifiers

thru

2N6405

Reverse Blocking Triode Thyristors
seRs

· .. designed primarily for half-wave ac control applications, such as motor
controls, heating controls and power supplies; or wherever half-wave silicon
gate-controlled, solid-state devices are needed.

16 AMPERES RMS
50 thru 800 VOLTS

• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts

_--t~-r-_G--<>c K

AC>-O

•

*MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Forward and Reverse Voltage
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
RMS On-State Current, TC

VRRM
or
VORM

= 90°C

Average On-State Current
Peak Non-Repetitive Forward Surge Current
(1/2 cycle, Sine Wave, 60 Hz, TJ = 125°C)
Circuit Fusing
(TJ = -40 to

Value

Unit
Volts

50
100
200
400
600
800

IT(RMS)

16

Amps

IT(AV)

10

Amps

ITSM

160

Amps

12t

100

A 2s

PGM

20

Watts

PG(AV)

0.5

Watt

+ 125°C, t = 1 to 8.3 ms)

Forward Peak Gate Power
Forward Average Gate Power
"Indicates JEDEC Registered Data.

(cont.1

MOTOROLA THYRISTOR DEVICE DATA
3-115

2N6400 thru 2N6405
-MAXIMUM RATINGS - continued
Rating

Symbol

Value

Unit

IGM

2

Amps

TJ

-40 to + 125

°c

Tstg

-40 to +150

°c

Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

= 250C unless otherwise noted.)

Symbol

Characteristic
'Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25'C
TJ = 125°C

Min

Typ

Max

Unit

-

-

10
2

pA.
mA

VTM

-

-

1.7

Volts

IGT

-

5

30

mA

-

0.7

1.5
2.5

IORM,IRRM

*Peak On-State Voltage
(lTM = 32 A Peak, Pulse Width .. 1 ms, Duty Cycle .. 2%)
*Gate Trigger Current (Continuous dc)
(VO = 12 Vdc, RL = 50 Ohms)
*Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, RL = 50 Ohms)

VGT
TC = 25°C
TC = -40°C
TC = +125°C

(VO = Rated VORM, RL = 50 Ohms)

•

-

-

IH

Turn-On Time
(lTM = 16 A, IGT = 40 mAdc, Vo = Rated VORM)
Turn-Off Time
(lTM = 16 A, IR = 16 A, Vo = Rated VORM)

tgt
tq
TC = 25°C
TJ = + 125°C
dv/dt

Critical Rate-of-Rise of Off-State Voltage
(VO = Rated VORM, Exponential Waveform)

-

0.2

TC = 25°C
*TC = -40°C

*Holding Current
(VO = 12 Vdc)

Volts

-

6

-

40
60

mA

i.£S

-

1

-

-

15
35

-

-

50

-

i.£S

V/i.£S

TJ = +125°C

'Indicates JEDEC Registered Data.

FIGURE 2 - MAXIMUM ON·STATE POWER DISSIPATION

FIGURE 1 - AVERAGE CURRENT DERATING

16

128

u

~ 124

....

a:

=>

!;;: 120

ffi

~

~~

"

......

116

I-

w

~
...,

A-l+~

""

a

~-....

"-'\

,~ ~

112

:E

i

x

108

«

'"'.104
...,

Q

I-

"- I'...~ ~ r-.... I'-...
~"\.
r-....
"- "- ~.......
\.
'\ "- I'..,
I
'" .'= 30
90·
60· I

"'

0

1.0

2.0

3.0

4.0

l-

« 12

5.0

6.0

7.0

• =

",

;;; 4.0

«

........
9.0

10

IT(AV). AVERAGE ON·STATE FORWARD CURRENT (AMP)

~

(/ . /V

I /
/ V.,b ~ " /
/. ~ ~
liP"
h~

w 6.0

0:-

30·

//

/

j ///./

.~

>
«

de

180·

I I

8.0

60·

~
a:
w 10
3:
~
w 8.0

«
a:

120· '"

90·

TJ ~ 125·C

to

I-...

18~

120·

14

I-

CONOUCTION
ANGLE

.........

I
100 0

0

u;

2.0

~

00

~

1.0

2.0

3.0

4.0

5.0

6.0

7.0

A-lala =

CONDUCTION
AINGLE I

8.0

9.0

IT(AV). AVERAGE DN·STATE FORWARD CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-116

10

2N6400 thru 2N6405
FIGURE 3 - ON-STATE CHARACTERISTICS

FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT

2tIO
".

V
". ~

1011

..

20

TJ

u

=125°C

I

w

~

7.0

tt

.........

r-...
f--

Q.

J

~

TJ =125°C
f .=60 Hz

~

120

.!:"

I'-.
..... 1"--,

SURGE IS PRECEDED AND
I - - fOLLYWEO BYtATE~ CUR1RENT

110
10

P\:h

~ 130

"";;'i

CI

~
..

r'--.

'-'

1/

::>

~

~ 140

A'

~30

"-

l'5

~

a::
:E
~

.
'".

~

150

>-

I'

50

160

a::
~

~

70

>~

....::;

Q250 C

1.0

2.0

3.0
4.0
NUMBER Of CYCLES

1"[',
6.0

B.O

10

z 5.0

o

:::>
'"
CI

~

3.0

~
z

~ 2.0
;!;

.~1.0

0.7
0.5

•

o.3

o. 2

~

U

U

~

U

U

U

U

U

~

U

VfM.INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

FIGURE 5 - THERMAL RESPONSE
."

1.0
~
z

~

iii

0.7
0.5

0.3

~r--

~E 0.2

.L

~~
ffi:i

i-"'""

O. 1
>- .. 007

-

ZOJCIt) - ROJC • rlt)

:>::E

E~ D~05

.
in

~

0.03

~

0.02

""

0.0 1
0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20
30
50
t. TIME (m,)

100

200

300

500

1.0k

2.0k 3.0k

5.0k

10 k

~.~.I.I.ifMljlWrll
MOTOROLA THYRISTOR DEVICE DATA
3-117

2N6400 thru 2N6405
TYPICAL TRIGGER CHARACTERISTICS

FIGURE 6 - PULSE TRIGGER CURRENT
100
70

!IE
~

""'-'

30

:::>

w

0-

OFF-STATEVOLTAGE-12V.=
RL = 5011-

50

20

FIGURE 7 - GATE TRIGGER CURRENT
2.0

" 1\
I"\,

...........

....

10

"""

......

It!

,.: 3.0

~ 10

ffi

IIII

2.0

5.0

10

20

50

100

2.0
-60

200

OFF kATE

.....

C!I

•

~

g

fli

r-.....

0••

........
-40

20

-20

40

60

80

100

120

140

FIGURE 9 - HOLDING CURRENT

~OLTAIGE
= lJ vRL = 50 II

20
OFIF-STAr'e

VOL~AGE = \2 V

RL=5011-

~
~

........

I. . . . . .
.......

FIGURE 8 - GATE TRIGGER VOLTAGE

~

c--...

TJ. JUNCTION TEMPERATURE 10C)

1.0

;;; 0.8

~

'"~ 3.0

PULSE WIDTH Ims)

g

" .......

~

1'-0.

IIII
IIII
1.0

.....

7.0

w

rffitC

0.5

r---....

'"'"
~ 5.0

250C

.g> 2.0

1.0
0.2

Z

[

"":::>'-'

~ 7.0
~ 5.0

RL=5011-

0-

TJ = _400C

OFF's-rATEIVOLT~GE = 1~ V

1

10

t"-....

w

r--......

C!I
C!I

iii:

-.... I"-.....

0-

w
~ 0.4

""

"" 1.0
B
.........

C!I

t'-o..
~

'"z:9 5.0

r-....

o

t--...... ,..

%

r-......

j

........ 1'"
3.0

~
0.2
-80

2.0
-40

-20

20

40

80

80

TJ,JUNCTION TEMPERATURE 10C)

100

120

140

-80

-40

-20

20

40

80

80

TJ. JUNCTION TEMPERATURE 10C)

MOTOROLA THYRISTOR DEVICE DATA
3-118

~

120

140

2N6504
thru
2N6509

Thyristors
Silicon Controlled Rectifiers
· .. designed primarily for half-wave ac control applications, such as motor
controls, heating controls and power supply crowbar circuits.

seRs

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability

25 AMPERES RMS
50 thru 800 VOLTS

~

AO

G

OK

CASE 221A-C14
(TO-220AB)

STYLE 3

•

MAXIMUM RATINGS
Symbol

Rating
*Peak Reverse Blocking Voltage, Note 1

Unit
Volts

VRRM
2N6504
2N6505
2N6506
2N6507
2N6508
2N6509

50
100
200
400
600
800

Forward Current (TC = 85·C)
(All Conduction Angles)
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave)

Value

8.3 ms
1.5 ms

IT(RMS)
IT(AV)

25
16

Amps

ITSM

300
350

Amps
(cont.)

"Indicates JEDEC Registered Data.
Note 1. VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltege.
Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-119

2N6504 thru 2N6509
MAXIMUM RATINGS - continued
RatIng
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current

Symbol

Value

Unit

PGM

20

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

Operating Junction Temperature Range
Storage Temperature Range

TJ

-40 to

Tstg

-40 to

+ 125
+ 150

°c
°c

-THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

= 25°C unless otherwise noted.)

Symbol

Characteristic
*Peak Forward Blocking Voltage
(TJ = 125°C)

2N6504
2N6505
2N6506
2N6507
2N650S
2N6509

*Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C

IORM,IRRM

*Forward "On" Voltage, Note 1
(lTM = 50 A)

•

Min

VORM

VTM

Typ

Max

Unit
Volts

50
100
200
400
600
SOO

-

-

-

-

10
2

mA

-

1.S

Volts

-

40
75

mA

25
1

1.5

Volts

-

p.A

*Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = -40°C)

VGT

-

Gate Non-Trigger Voltage
(Anode Voltage = Rated VORM, RL = 100 Ohms, TJ = 125°C)

VGO

0.2

-

-

Volts

*Holding Current
(Anode Voltage = 12 Vdc, TC = -40°C)

IH

-

35

40

mA

*Turn-On Time
(lTM = 25 A, IGT = 50 mAdc)

tgt

-

1.5

2

p.S

Turn-Off Time (VORM = rated voltage)
(lTM = 25 A, IR = 25 A)
(lTM = 25 A. IR = 25 A, TJ = 125°C)

tq

-

15
35

-

*Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)

TC = 25°C
TC = -400C

IGT

dv/dt

Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated VORM, Exponential Waveform)

-

50

",s

V/",s

"Indicates JEDEC Registered Data.
Note 1. Pulse Test: Pulse Width", 300 p.s, Duty Cvcle '" 2%.

7

II

,

ill I

II I

12 11111:

'.1'1. III P'

, IIII

MOTOROLA THYRISTOR DEVICE DATA
3-120

1I111! II

2N6504 thru 2N6509
FIGURE 2 - MAXIMUM ON-5TATE POWER DISSIPATION

FIGURE 1 - AVERAGE CURRENT DERATING

130

II:! 120 I~ ~

~~

,,~

\

~ 110

~

100

i~
80

~

~ ~ r-...
\ r"-. ~ ~
~

1\'

\

'\.

,

\

a=3O"

f'.....
r---

I\. 90"
I
I I

II
~

'"

""'180"
"\..

U

~

""'-

M

de

""'-..

oI~ ~
o
4.0

20

ii:

:."

!i!
w

if

~ 10

~250

u

125"C j

~

.'I

en

~

~

225

~200

25"C

I-

ii:i 7.0

ac

5.0

~

3.0

~

I

./

V

TJ = 12S"C

12

20

18

"" "

PCh

~

~

f'....

.........
...... ~

SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT

...... ~

175

I

1.0

2.0

3.0

4.0

6.0

B.O

10

NUMBER OF CYCLES

~ 2.0

FIGURE 5 - CHARACTERISTICS AND SYMBOLS

z:
~

~~

l7

I

en

.!f.

/

B.O

' - - - TC = 85"C
f = 80Hz
-

~

"

II:

j

,;

f'....

~ 275

IL-

20

~

./
Vde

FIGURE 4 - MAXIMUM NON-REPEnnVE SURGE CURRENT
300

30

11/

/V

iT(AV). AVERAGE ON-STATE FORWARD CURRENT (AMPS)

FIGURE 3 - MAXIMUM FORWARD VOLTAGE

V,....

(f1'

180"

#. ~ V

100
70

/
90"

V
/ / V/ V",
V
V/. 0 -/

iT(AII). ON-5TATE FORWARD CURRENT (AMPS)

50

~

-Ia l-

f--a = CONDUCTION ~NGLE

a = CONIlUCTlON ANGLE

60"

a=3O"\

o

f---

--I a l- f---

t':::-

"1\

32

f--------

+1

1.0

,,,
,

0.7

0.5
0.3

REVERSE
'T
BLOCKING
REGION
IH

-V _ __~~~I~D~RM~~===1~~~
+V

I

0.2

0.1

o

0.4

!

O.B

1.2

1.6

2.0

2.4

REVERSE
AVALANCHE
REGION

2.B

Yf.INSTANTANEOUS VOLTAGE (VOLTS)

'RRM
VDRM
FORWARD
BLOCKING
_I
REGION

~i,';i,:{¢;hNJ~'t?t.),'t;~:;;·filiiiJrJffl:;f;.?;;~fl~~~~Jt~~lJ!l.~
MOTOROLA THYRISTOR DEVICE DATA
3-121

2N6504 thru 2N6509
FIGURE. - THERMAL RESPONSE

~
~

1.0
0.7
0.5

...-

~~ ~ 0.3

1---1--'

iiD.2
1~0.1
....

ZruCII) = Rruc -r(I)

V

ffi om
~ 0.05

~

0.03 . /

~ 0.D2
0.01

0.1

0.2 0.3

0.5

2.0 3.0

1.0

5.0

10

20 30
50
t T1MElms)

200 300

100

500

1.0 k

2.0 k 3.0 k 5.0 k

10 k

TYPICAL TRIGGER CHARACTERISTICS
FIGURE 8 - GATE ,",IGGER VOLTAGE

FIGURE 7 - GATE '"'!GOER CURRENT
50

1.1

40

~1.0

OFf.STAlE VOLTAGE = 12 V

1 30

I

20

i""-

•

~

c(

g

.........

.........

-40 -20

0

20

.........

40

60

.........:.

80

...........

~ 0.6

..........

100

.......

~ 0.5

r-120

I

......

~ 0.7

....................

7.0
5.0
-60

.......

0.8

!ij

..........

I

..........

0.9

~

~ 10

~

...........

~

..............

I

I

OFF-STATE VOLTAGE = 12 V-

""'"

0.4
-60 -40 -20

140

0

TJ. JUNCTION TEMPERATURE IOC)

20

40

60

80

TJ. JUNCTION TEMPERATURE IOC)
FIGURE 9 - HOLDING CURRENT

50
40

..........
...............

...............
.........

r-........
...........

.....................

......

7.0
5.0
-60 -40 -20

0

20

40

60

80

100

120 140

TJ. JUNCTION TEMPERATURE IOC)

MOTOROLA THYRISTOR DEVICE DATA
3-122

100

120

140

C35
Series

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
· .. designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gatecontrolled, solid-state devices are needed.

seRs
35 AMPERES RMS
50 thru 800 VOLTS

• Glass Passivated Junctions and Center Gate Fire for Greater Parameter
Uniformity and Stability
• Blocking Voltage to 800 Volts

~

AO

G

oK

CASE 263-04
STYLE 1

MAXIMUM RATINGS (TJ = 125'C unless otherwise noted.)
Symbol

Rating

Peak Repetitive Forward and Reverse Blocking Voltage, Note 1
C35F
(TC= -65 to + 125'C)
C35A
C35B
C35D
C35M
C35N

VDRM
or
VRRM

Non-Repetitive Peak Reverse Voltage
(TC = -65 to + 125'C, V < 5 ms)

VRSM
C35F
C35A
C35B
C35D
C35M
C35N

RMS On-State Current (All Conduction Angles)
Peak Non-Repetitive Surge Current
(One cycle, 60 Hz)
Circuit Fusing
(t = 1 to 8.3 ms)
Peak Gate Power

Value

Unit

Volts
50
100
200
400
600
800
Volts
75
150

300
500
720
960
IT(RMS)

35

Amps

ITSM

225

Amps

12t

75

A 2s
Watts

PGM

5

Average Gate Power

PG(AV)

0.5

Watt

Peak Reverse Gate Voltage

VGRM

5

Volts

TJ

-65 to +125

Tstg

-65 to +150

°c
°c

Operating Junction Temperature Range
Storage Temperature Range

Note 1. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings applv for zero or negative
gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking
voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-123

•

C35 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TJ

=

25°C unless otherwise noted.)

Characteristic
*Peak Forward Blocking Current
(VO = Rated VORM @TC = +125°C)

(Vo

= Rated VORM @ TC =

C35F,A
C35B
C350
C35M
C35N
All Devices

125°C)

Peak Reverse Blocking Current
(VR = Rated VRRM @ TC = + 125°C)

(VR

= Rated VRRM @ TC =

-

-

13
12
6
5
4
10

-

-

-

6.5
6
4
2.5
2
10

p.A

-

-

2

Volts

-

6

40

VTM

Gate Trigger Current (Continuous dc)
(Vo = 12 Vdc, RL = 50O)
(VO = 12 Vdc, RL = 500, TC = -65°C)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, RL = 500, TC = -65°C to + 125°C)
(VO = Rated VORM, RL = 10000, TC = 125°C)

VGT

140

w
a:

...i= 120

a:
w
~ 100
w
Iw

...'"u
~
...'"
g
...

80

60

~

-'

:IE
::>
:IE

...

X

u·

I

~...... ......
~
~~

'\.

'\

.....

~
..........

...~

-

~

a~

;::
'"
......

~

a:
w

""

a= 3D.

II

.......

60. 90· 120·

180·

II JlL

J

u

~

~

.......

-

V/p.s

de

./

30

...a:to

20

w

~

...

IT(AV), AVERAGE ON.sTATE CURRENT (AMPS)

~

~

50

...>o· 10

de
~

-

mA

60

~

...w'"
I

~

10
20
25

-

70

~ 40
C

..........

.........
I I
I I

100

Volts

z

"'i
...........
"- I'\..""i'.. ........
.......

40
20

J

3

-

-

FIGURE 2 - POWER DISSIPATION
(HALF-WAVE SINE WAVE)

~
I-

,

pA
mA

80

dv/dt

FIGURE 1 - CURRENT DERATING
(HALF-WAVE RECTIFIED SINE WAVE)

mA

-

0.25

C35F,M,N
C35A,B
C350

Unit

mA

-

IH

Critical Rate of Rise of Forward Blocking Voltage
(VO = Rated VORM, TC = + 125°C)

I-

Max

IORM(AV)
or
IRRM(AV)

Holding Current
(VO = 24 Vdc, Gate Supply = 10 V, 20 0,
45 p.s minimum pulse width, IT = 0.5 A)

:IE

Typ

-

Peak On-State Voltage
f
(lTM = 50.3 A peak, Pulse Width", 1 ms, Duty Cycle'" 2%)

~

Min

IORM
or
IRRM

-

C35F,A
C35B
C350
C35M
C35N
All Devices

125°C)

Symbol

./

180·
120· V
90· / /
60·// /
a= 3D./. y./ /

./

V

~
8

~
~~

V

1/

V

12

..... a .....

16

20

24

28

32

~

IT (AV),AVERAGE ON.sTATE CURRENT (AMP)

,

.IPII• • • I'!liIRI~~INIIII.letID'Jtti'llI'IiRtill.lll;illll.I.~I.1 .fkill Bil
MOTOROLA THYRISTOR DEVICE DATA
3-124

C106
Series

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristors
· .. Glassivated PNPN devices designed for high volume consumer applications
such as temperature, light, and speed control; process arid remote control, and
warning systems where reliability of operation is important.
•
•
•
•

SCRs
4 AMPERES RMS
50 thru 600 VOLTS

Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

G

AO~--~~v"'-_o K

G

CASE 77-05
(TO-225AA)
STYLE 2

MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Forward and Reverse Blocking Voltage
Cl06F
(RGK = 1 kO)
(TC = -40· to 110·C)
Cl06A
Cl06B
Cl06D
Cl06M

VDRM
or
VRRM

Value

Unit
Volts

50
100
200
400
600

RMS Forward Current
(All Conduction Angles)

IT(RMS)

4

Amps

Average Forward Current
(TA = 30·C)

IT(AV)

2.55

Amps

Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = -40 to + 110·C)

ITSM

20

Amps

> 1.5 ms

12t

0.5

A 2s
Watt

Circuit Fusing t

Peak Gate Power
Average Gate Power
Peak Forward Gate Current

•

PGM

0.5

PG(AV)

0.1

Watt

IGFM

0.2

Amp
(cont.)

~."'ti:{~ ~·~J~J'~~;>-~:?\")'0':'.;~·;,t'iiC':'F:% ".¥: ~~ '¥~.r~~~.~~• •~'.RJ~~iIl~~ 7<.M!Ni{~jitry.~iJ·
~~~~;~~?"G"i?llIiV,
",,111 ...... "1,, <:rr..JJ. ~.~#'~!~XV"1
., .+~PM<.¥-~,!,,~;Ni.al

MOTOROLA THYRISTOR DEVICE DATA
3-125

C106 Series
MAXIMUM RATINGS -

continued
Symbol

Rating
Peak Revetse Gate Voltage

Value

Unit

VGRM

6

Volts

TJ

-40 to +110

Tstg

-40 to +150

'c
'c

-

6

in. lb.

Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque, Note 1

Note 1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN-290 B)

+ 200°C.

For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed
results, an activated flux (oxide removing) is recommended.

For optimum

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

Characteristic

RIiJC

3

'CIW

Thermal Resistance, Junction to Ambient

RIiJA

75

'CIW

ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, RGK = 1000 Ohms)

TJ = 25'C
TJ = 110'C

Forward "On" Voltage
(lFM= 1 A Peak)

VTM

Gate Trigger Current (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms)
(VAK = 6 Vdc, RL = 100 Ohms, TC

•

=

=

10
100

pA
pA

-

-

2.2

Volts

-

30
75

200
500

0.4
0.5
0.2

-

0.8
1

-

-

0.3
0.4
0.14

-

mA

-

3
6
2

-

8

-

V/fJ.S

-

-

TJ = 25'C
TJ = -40'C
TJ = +110'C

1000 Ohms)

IHX

dv/dt
tgt

-

1.2

Turn-Off Time

tq

-

40

~
w

a:

.......

90

!;;:

...a:w

!>-

..

V

HALF SINE WAVE
"RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz

40

~ 30

t.>

20

o

i
.4

ILs

+eMPEAATUR~ '" 110bc

/

;:
;t

DC

C

a:

I
I

r--....

~

~
w

~

t\.

HALF SINE WAVE
RESISTIVE DR INDUCTIVE LOAD
50 TO 400Hz.

~

" "' '1'0.., '1'0..

60

10

::::.....

~

50

JUNbTlDN

z

........ ..r'

70

fJ.S

o

........ ...........

80

Volts

FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION

~~

:::J

>-

-

VGT

FIGURE 1 - AVERAGE CURRENT DERATING

w

-

Turn-On Time

100

Unit

pA

-40'C)

Forward Voltage Application Rate
(TJ = 110'C, RGK = 1000 Ohms, Vo = Rated VORM)

110

Max

IGT

Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms, RGK = 1000 Ohms) TJ = 25'C
(VAK = Rated VORM, RL = 3000 Ohms,
TJ = -40'C
RGK = 1000 Ohms, TJ = 110'C)
Holding Current
(VO = 12 Vdc, RGK

Typ

Min

IORM,IRRM

~

4

z

........

/~ " ,

o

"

.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
IT IAV) AVERAGE DN·STATE CURRENT (AMPERES)

4.0

w

c.o

<

~

>
<

:>
<

~

,

............ j

0
0

--

~

/
~

./

~'"

",

DC

~
~

.4

.8
1.2
1.6
2.0
2.4
2.6
3.2
3.6
'T IAV) AVERAGE ON·STATE CURRENT (AMPERES)

MOTOROLA THYRISTOR DEVICE DATA
3-126

/

4.0

C106 Series
P...... Intllrch.llllllblllty

Th. dimen.'onal dlagr_. bal_ compara the critical dlmen.lon. of the Motorola C·'06 package
with competitive devicli. It he. been demonltreted that the Imallar dimen.ion. of the Motorola pack •
... make it compatible In molt lead-mount .nd ch...,.....ount applications. The u..r I. advlud to
campara all critical dlmen,lon. for mounting compatibility.

Motorolo

c·, 06 Pockogo

Competitive C·'06 Pocko ...

MOTOROLA THYRISTOR DEVICE DATA
3-127

C122
Series

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
• .. designed primariiy for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gatecontrolled, solid-state devices are needed.

seRs
8 AMPERES RMS
50 thru 800 VOLTS

• Glass Passivated Junctions and Center Gate Fire for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 600 Volts
• Different Lead Form Configurations,
Suffix (2) thru (6) available, see Thyristor Selection Guide for Information

•

~

AO

G
oK

CASE 221A-04
(TO-220AB\
STYLE 3

MAXIMUM RATINGS
Symbol

Rating
Repetitive Peak Off-State Voltage, Note 1
Repetitive Peak Reverse Voltage

C122F
C122A
C122B
C1220
C122M
C122N

Non-Repetitive Peak Reverse Voltage

VORM
VRRM

TC" 75°C

Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)

Unit
Volts

50
100
200
400
600
800
Volts

VRSM
75
200
300
500
700

C122F
C122A
C122B
C1220
C122M
C122N
Forward Current RMS
(All Conduction Angles)

Value

SOO
IT(RMS)

8

Amps

ITSM

90

Amps

12t

34

A 2s

Note 1. VORM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. (cont.)
Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

11'111 11

~_'.ISMI'•• II'I'ifM~!..,....e"'II.I""'D5Innll_
MOTOROLA THYRISTOR DEVICE DATA
3-128

C122 Series
MAXIMUM RATINGS -

continued
Rating

Forward Peak Gate Power (t = 10 J.'S)
Forward Average Gate Power

Symbol

Value

Unit

PGM

5

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to + 100

°c

+ 125

°c

Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range

-40 to

Tstg

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

=

25°C unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TC = 25°C
TC = 100°C

Min

IORM,IRRM

Peak On-State Voltage, Note 1
(lTM = 16 A Peak, TC = 25°C)

VTM

Gate Trigger Current (Continuous de)
(VO = 6 V, RL = 91 Ohms, TC = 25°C)
(VO = 6 V, RL = 45 Ohms, TC = -40°C)

IGT

Gate Trigger Voltage (Continuous de)
(VO = 6 V, RL = 91 Ohms, TC = 25°C)
(VO = 6 V, RL = 45 Ohms, TC = -40°C)
(VO = Rated VORM, RL = 1000 Ohms, TC

VGT

Unit

-

10
0.5

/loA
mA

-

-

1.83

Volts

-

-

25
40

-

1.5
2

-

= 100°C)

Max

-

-

Holding Current
(VO = 24 Vdc, IT = 0.5 A, 0.1 to 10 ms Pulse,
Gate Trigger Source = 7 V, 20 Ohms)

Typ

0.2

mA

Volts

-

mA

IH
TC
TC

-

= 25°C
= -40°C

Turn-Off Time (VO = Rated VORM)
(lTM = 8 A, IR = 8 A)
Critical Rate-of-Rise of Off-State Voltage
(VO = Rated VORM, Linear, TC = 100°C)

-

-

-

30
60

tq

-

50

-

/loS

dv/dt

-

50

-

V//loS

Note 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle'" 2%.

FIGURE 2 - CURRENT DERATING (FULL-WAVE)

FIGURE 1 - CURRENT DERATING (HALF·WAVE)

~
w

"'=>>~
~>w

~
w

~

~

~

75~--~---4----H----1----t----t----H---~

j

~

70

"~

'=>"
'x~"

m

«
;;:

~

«

«
=>

x

«

'"

",'

>-

60
0

1
4
5
7
IT(AV). AVERAGE ON·STATE FORWARO CURRENT (AMPERES)

65

+----I+----+----+----I------Jt---I

RESISTIVE OR
INOUCTIVE LOAO.
50 TO 400 Hz -+----I+----t---4~--+---4t_---j

60~0--~L---~---U----~--~----~--~--~

",'

>-

IT(AV). AVERAGE ON·STATE CURRENT (AMPERES)

MOTOROLA THYRISTOR DEVICE DATA
3-129

C122 Series
FIGURE 3 - MAXIMUM POWER DISSIPATION (HALF-WAVEI

~

....

~
:5
;::

::
~

u;

14
-

~

6 -CONDUCTION I-- 6'j
I/.. ~
ANGL?O.
~ ~ ./
4

ffi>

..
..

'>

iC

120·

900

-

w

'"

2

::

./

° ~ ""'"

~

,"

c

1/

'"~

:rw
....

«

I;;

~V

z

0

~

/.

~

"/

./

iii

,/

180·

8

o

z
0
;::

L

10

2

w

'"ffi
>
4

10

~

DC

12

'"
~

Z

........
«

R~SIStIVEI OR iND CTI~E LhAD'50 o 4~0 H)

C

:rw

FIGURE 4 - MAXIMUM POWER DISSIPATION {FULL-WAVEI

..

7

....u

IT(AV). AVERAGE DN-5TATE CURRENT (AMPERES)

1---+----1~N"I.I'!i;.c--+--h_CJulll

I--~~~~-+---+~. "~
,.

1---2!S'IIfI.~--If---+---+_oln CYCLE Of .......' FftEQUENCY

RESISTIVE OR INDUCTIVE LOAD. 50TD 400 Hz

4

5

IT(AVI. AVERAGE ON-5TATE CURRENT (AMPERES)

•

MOTOROLA THYRISTOR DEVICE DATA
3-130

CDllIUCTIOII

7

-

C205
Series

Plastic Silicon Controlled
Rectifiers
· .. designed and tested for repetitive peak operation required for CD ignition, fuel
ignitors, flash circuits, motor controls and low-power switching applications.
• 150 Amperes for 2 p.S Safe Area
• High dv/dt
• Very Low VF at High Current
• Low-Cost TO-92

SCRs
1.2 AMPERES RMS

30 thru 400 VOLTS

AO

MAXIMUM RATINGS
Rating

Symbol

Repetitive Peak Off-State Voltage. Note 1
Repetitive Peak Reverse Voltage
C205Y
C205YV
C205A
C205B
C2050

400

Peak Forward Surge Current (1/2 Cycle. Sine Wave. 60 Hz)
TA = 25°C

Forward Average Gate Power

TA = 25°C

Forward Peak Gate Current

TA = 25·C

Unit
Volts

30
60
100
200

Forward Current RMS (All Conduction Angles)

Forward Peak Gate Power

Valua

VRRM
VORM

Operating Junction Temperature Range
Storage Temperature Range

IT(RMS)

1.2

Amps

ITSM

10

Amps

PGM

0.5

Watts

PG(AV)

0.1

Watt

IGM

0.2

Amps

TJ

-40 to +125

"C

Tstg

-40 to +150

·C

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Note 1. VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage.
Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-131

C205 Series
ELECTRICAL CHARACTERISTICS (TC = 250(; unless otherwise noted. RGK = 1000 Ohms)

Symbol

Cha...cteri8tic
Peak Forward Blocking Current
(Rated VORM)

TC
TC

Peak Reverse Blocking Current
(Rated VRRM

TC
TC

= 25°C
= 125°C
= 25°C
= 125°C

Peak On-State Voltage, Note 1
(lTM = 1 A Peak, TC = 25°C)

Min

Typ

-

-

-

-

5
10

tq

-

15

-

p.s

dv/dt

-

20

-

V/p.s

IORM
IRRM
VTM

Gate Trigger Current (Continuous dc)
(VO = 6 V, RL = 100 Ohms, TC = 25°C
TC = -4OOC

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 7 V, RL = 100 Ohms, TC = 250(;)

VGT

Holding Current
Anode Voltage

= 12 Vdc

Turn-Off Time (V ORM
TJ = +125°C

TC
TC

= Rated Voltage)

Forward Voltage Application Rate
(TC = 100°C)

= 250(;
= -4OOC

IH

Note 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle .. 2%.

•

MOTOROLA THYRISTOR DEVICE DATA
3-132

Max

Unit

10
200

pA

10
200

pA

1.6

Volts

pA
200
500
0.8

Volts
mA

C228
C228( )3
C229

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor

Series

· .. designed for industrial and consumer applications such as power supplies,
battery chargers, temperature, motor, light and welder controls.
•
•
•
•

Economical for a Wide Range of Uses
High Surge Current - ITSM = 300 Amps
Low Forward "On" Voltage -1.2 V (Typ) @ ITM = 35 Amps
Practical Level Triggering and Holding Characteristics - 10 mA (Typ) @
TC = 25°C
• Rugged Construction in Either Pressfit, Stud, or Isolated Stud Packages
• Glass Passivated Junctions for Maximum Reliability

SCRs
35 AMPERES RMS
100 thru 600 VOLTS

Q

A

oC>----1~~--<>o K

MAXIMUM RATINGS
Rating

Symbol

Repetitive Peak Off-State Voltage, Note 1
(TJ = -40 to + 125°C)
C228A,C228A3,C229A
C228B,C228B3,C229B
C228D,C228D3,C229D
C228M, C228M3, C229M
Non-Repetitive Reverse Voltage
(TJ = -40 to +125°C)
C228A,C228A3,C229A
C228B, C228B3, C229B
C228D,C228D3,C229D
C228M, C228M3, C229M

=

Unit
Volts

#

100
200
400
600
Volts
150
300
500
720

IT(RMS)

35

Amps

ITSM

300

Amps

12t

370

A 2s
Watts

-40 to + 125°C)

Circuit Fusing Considerations
(TC = -40 to + 125°C, t = 1 to 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Forward Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

Value

VRSM

Forward Current RMS
Peak Surge Current
(One Cycle, 60 Hz, TC

VDRM
and
VRRM

PGM

5

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to +125

°c

Tstg

-40 to + 150

°c

30

in. lb.

-

Note 1. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to
the gate concurrently with a negative potential on the anode.

MOTOROLA THYRISTOR DEVICE DATA

3-133

CAR""
STYLE 1
C229 Series

If~E_
STYLE 1
C228 Series

II~311~

STYLE 1
C228( )3 Series

C228 • C228(

)3. C229 Series

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance. Junction to Case
C22S and C229 Series
C22S( )3 Series

Max

Unit

0c/w

R9JC
1.7
1.S5

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM. gate open) TC = 25°C
TC = 125°C
Forward "On" Voltage
(lTM = 100 A Peak)

VTM

Gate Trigger Current (Continuous de)
(Vo = 12 Vdc. RL = 80 Ohms, TC = 25°C)
(VO = 6 Vdc, RL = 50 Ohms, TC = -40°C)

IGT

Gate Trigger Voltage (Continuous de)
(VO = 12 Vdc, RL = SO Ohms, TC = 25°C)
(VO = 6 Vdc. RL = SO Ohms. TC = -4O"C)

VGT

Gate Trigger Voltage
(Rated VORM. RL = 1000 Ohms, TC = +125°C)
Holding Current
(Anode Voltage = 24 V. gate open)

•

VGT

TC = 25°C
TC = -40°C

IH

Turn-On Time (td + t r )
(lTM = 35 Adc, IGT = 40 mAde)

ton

Turn-Off Time
(lTM = 10 A, IR = 10 A)
(lTM = 10 A. IR = 10 A, TC = 100°C)

toff

Forward Voltage Application Rate
(TC = 100°C)

dv/dt

FIGURE 1 - CURRENT DERATING
(HALF-WAVE RECTIFIED SINE WAVE)

....u

Typ

Max

Unit

-

-

-

10
3

p.A
mA

-

-

1.9

Volts

-

-

40

-

-

2.5
3

0.2

-

-

-

-

75
150

1

-

-

20
35

-

50

-

Min

IORM,IRRM

mA
SO
Volts

10

mA
/LS

p.s

V/p.s

FIGURE 2 - CURRENT DERATING
(FULL-WAVE RECTIFIED SINE WAVE)

45L-__~~LJ~L-~~~~__L-__~__~__~

o

Volts

40
IT (AV). AVERAGE ON-STATE CURRENT (AMPS)

IT (AV) AVERAGE ON-STATE CURRENT (AMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-134

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
· .. designed for industrial and consumer applications such as power supplies,
battery chargers, temperature, motor, light and welder controls.
•
•
•
•

C230,231
C230( )3,
231( )3
C232,233
Series

Economical for a Wide Range of Uses
High Surge Current - ITSM = 300 Amps
Low Forward "On" Voltage -1.2 V (Typ) @ ITM = 25 Amps
Practical Level Triggering and Holding Characteristics - 10 mA (Typ) @ TC =

SCRs

25 AMPERES RMS
50 thru 600 VOLTS

25°C
• Rugged Construction in Either Pressfit, Stud, or Isolated Stud
• Glass Passivated Junctions for Maximum Reliability

AO

~

G

OK

MAXIMUM RATINGS
Rating

Suffix Symbol

Peak Repetitive Off-State Voltage, Note 1
(TC = -40 to + 100°C)
All Types

F
A
B

Value

Unit

VDRM
and
VRRM

50
100
200
400
600

Volts

VRSM

75
150
300
500
720

Volts

IT(RMS)

25

Amps

ITSM

250

Amps

12t

260

A 2s

PGM

5

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to +100

°c

Tstg

-40 to + 125

°c

-

30

in. lb.

Symbol

Max

0
M
Non-Repetitive Reverse Voltage
(TC = -40 to 100°C)
All Types

F
A
B

0
M
Forward Current RMS
Peak Surge Current
(One Cycle, 60 Hz, TC = -40 to 100°C)
Circuit Fusing
(TC = -40 to 100°C, t = 1 to 8.3 ms)
Peak Gate Power
Average Gate Power
Peak Forward Gate Current
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

CASE 174-04

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Pressfit and Stud
Isolated Stud

Unit
°CIW

R6.JC
1
1.15

Note 1. VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to
the gate concurrently with a negative potential on the anode.

MOTOROLA THYRISTOR DEVICE DATA

3-135

ITO-203)
STYLE 1
C232 and C233 Series

CASE 175-03
STYLE 1
C230 and 231 Series

C2301

CASE 235-03
STYLE 1
)3 and C2311 )3 Series

•

C230,231 • C230( )3, 231( )3. C232, 233 Series
ELECTRICAL CHARACTERISTICS (TC

= 25°C unless otherwise noted.)

Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TC = 25°C
TC = 100°C

IORM,IRRM

Forward "On" Voltage
(lTM = 100 A Peak, Pulse Width"" 1 ms, Outy Cycle"" 2%)
Gate Trigger Current, C230, C230( )3, C232 series
(VO = 12 Vdc, RL = 120 Ohms)
(VO = 12 Vdc, RL = 60 Ohms)
Gate Trigger Current, C231, C231(
(VO = 12 Vdc, RL = 120 Ohms)
(Vo = 12 Vdc, RL = 60 Ohms)

IGT
TC

TC

-40°C

TC
TC
TC

=

--

w _ 80
..J U

;~

9

:----: ~ ~

......

I-- -

",0

Q' '"

30 0

=
=

-40°C
+100°C

=

TC

=

100°C

TC

=

100°C

1.9

Volts

-

-

25
40

-

-

9
20

-

1.5
2

JJA

mA

-

mA

-

Volts

50

-

mA

100

-

1

-

-

25
35

-

-

100

-

,..s
p.s

V/p.s

FIGURE 2 - ON-STATE POWER DISSIPATION
versus ON-STATE CURRENT

~

u;

I, ~ >-

~ 24

180 0
18
600

co

~
co 12

40

w

24

28

IT(AV). AVERAGE FORWARD CURRENT (AMPS)

~
....j,,~

II.~

>

20

:L/

~~V

"-

.
..i'

1/ L

/

./

jh~ V

ex'" 30 0

'"~ 6.0

uu
>20

~ooL

90 0

c;

:::>"-

~

f'

0' =

I--

I--

Conduction Angle

./
4.0

8.0

12

16

20

IT(AV). AVERAGE FORWARD CURRENT (AMPS)

NOTE. Derating IS for Presslh and Stud Devices. Isolated stud devices must be derated
an additional 15%. For exam pier the max Tc@16A(180 0 conductionangle)
is 70 oe, a derating of 30 oe. Isolated stud devices must be derated 34.5 0 C;
therefore, the maximum TC IS 65.5 0 C.

MOTOROLA THYRISTOR DEVICE DATA
3-136

V

,/

z
co
;:::
"-

~ 60

16

-

-

tq

= 50 p.s,

---

12

mA

-

tgt

<:

"w
:E~ ~

10
1

0.2

-40°C

::Iiw

~ ~

-

-

dv/dt

~o ~0
900~~~00

-

-

-40°C

FIGURE 1 - CURRENT DERATING FOR
PRESSFIT AND NON-ISOLATED STUD
~

Unit

= Rated VORM)

Forward Voltage Application Rate
(VO = Rated VORM)

100

Max

VGT

= 0.5 A)

Turn-Off Time
(lTM = 10 A. IR = 10 A, Pulse Width
dv/dt = 20 V/,..s, Vo = Rated VORM)

Typ

IGT

IH

Turn-On Time (td + t r )
(lTM = 25 Adc, IGT = 40 mAdc, Vo

•

=

)3, C233 (Continuous dc)

Gate Trigger Voltage (Continuous dc)
(Vo = 12 Vdc, RL = 120 Ohms)
(VO = 12 Vdc, RL = 60 Ohms)
(VO = Rated VORM, RL = 1000 Ohms)
Holding Current
(VO = 24 V, gate open, IT

VTM

Min

24

28

C230,231 • C230(

)3, 231(

)3. C232, 233 Series

FIGURE 3 - GATE CURRENT VARIATION
WITH TEMPERATURE

FIGURE 4 - GATE VOLTAGE VARIATION
WITH TEMPERATURE

20

.s<
~

"" 10

1.0

r--....

..........

5.0

w

~

~

...........

§! 0.7

..........

:'!:i

........

g
a:
....

.......

..........

"

0.6

~ 0.5

r--....

~

r-....

<

'"

3.0
2.0
-60

-

...........

:;

........

Off·State Voltage = 12 V -

...........

~ 0.8

~ 7.0

'"

~

<

""u::>

'"'"
~

I

'" 0.9
~
o

I
.1.
I
Off·State Voltage = 12 V

~ 0.4
>

-40

-20

0

20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE (DC)

0.3
-60

-40

-20

20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE (DC)

•

••llj ......... I~IIIII:~
MOTOROLA THYRISTOR DEVICE DATA
3-137

MAC15A
Series

Triaes
Silicon Bidirectional Triode Thyristors
• •. designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave
silicon gate controlled solid-state devices are needed. Triac type thyristors switch
from a blocking to a conducting state for either polarity of applied anode voltage
with positive or negative gate triggering.

TRIAC.
15 AMPERES RMS
200 thru 800 VOLTS

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

•

CASE 221A-04
(TO-220AB)

STYLE 4
MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Off-State Voltage
(TJ = -40 to 125·C)

Value

MAC15A4
MAC15A6
MAC15AB
MAC15A10

Unit
Volts

VORM
200
400
600
BOO

Peak Gate Voltage
On-State Current RMS
Full Cycle Sine Wave 50 to 60 Hz (TC = +90·C)

VGM

10

Volts

IT(RMS)

15

Amps

12t

93

A2s

Peak Surge Current
(One Full Cycle, 60 Hz, TC = + BO·C)
Preceded and followed by rated cu rrent)

ITSM

150

Amps

Peak Gate Power (TC = +SOOC, Pulse Width = 2 p.s)

PGM

20

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to +125

·C

Tstg

-40 to +150

·C

Circuit Fusing

Average Gate Power (TC = + BO·C, t = B.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

MOTOROLA THYRISTOR DEVICE DATA
3-138

MAC15A Series
ELECTRICAL CHARACTERISTICS (Tc = 2S·C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted.)
Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 2S·C
TJ = 12S·C
Peak On-State Voltage
(lTM = 21 A Peak; Pulse Width

=

IORM,IRRM

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)

IGT

Max

Unit

-

-

10
2

mA

1.3

1.6

Volts

pA.

Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
(VO = Rated VORM, RL = 10 k Ohms, TJ = 110·C)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-); MT2(-), G(+)

VGT

mA

-

-

SO
SO
50
80
Volts

-

0.9
0.9
1.1
1.4

2
2
2
2.S

0.2

-

-

Holding Current (Either Oirection)
NO = 12 Vdc, Gate Open)
(IT = 200 mAl

IH

-

6

40

mA

Turn-On Time
No = Rated VORM, ITM = 17 A)
(lGT = 120 mA, Rise Time = 0.1 p.s, Pulse Width

tgt

-

1.S

-

p.s

dv/dt(c)

-

S

-

V/p.s

= 2 p.s)
= 8 Alms,

FIGURE 1 - RMS CURRENT DERATING

~ 120

2or----,--~---,----~---,---.----~._,

........ ~

j;: 11 0
<
IZ:

~
IZ:

w

~~

~

.=1800

100

o

~ 16

~~
/
~ ~ ./",=900

w

80

/",=300
/"'=600

IZ:

~
$' 9o

•

FIGURE 2 - ON-8TATE POWER DISSIPATION

130

~

Typ

1 to 2 ms, Outy Cycle" 2%)

Critical Rate of Rise of Commutation Voltage
(VO = Rated VORM, ITM = 21 A. Com mutating di/dt
Gate Unenergized, TC = 80·C)

~
w

Min

JAy
-J.

a=

-

........

~w

~ ~ .......
de,", l'.. ~
r'\. i'..

'"<
~

~

:>

~

TJ ~ 1250,

CONOUCTION ANGLE

6

10

12

I"\.

14

12

0~0~~~--+---~--~---7.10,---~12~-.1~4--~16

16

IT(RMS). RMS ON-5TATE CURRENT (AMP)

IT(RMS). ON·STATE CURRENT (AMP)

?,••____••,MI_._

1i1.1i••
I _ ••••••••I_
••
' ••

! .'_II5ISi~.tl_lll.il.i

MOTOROLA THYRISTOR DEVICE DATA
3-139

MAC15A Series
FIGURE 4 - TYPICAL GATE TRIGGER CURREN:r

FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE

\2

1.8

~

OF:F-5TA~E VOLtAGE =

1.6

V-

«

I

~ 1.4

1.2

..........

~

I""'-;;'"

w

'" 0.8
~

"""'"

.......

- --

I~ :""":::

- QUADRANTS

5 0.6

-60

-40

-20

20

40

~

'"....'"
=

~ 10

.......

~

'"£i' 7.0

~ ~='

3-:'"

I- 0.4

...

~

.......

60

80

100

120

QUADRANT

-40

r--.....

..........

.......

~ r--......
I><:
t>-..
l<"
/
v
.......... ...........
2./'
--!- ---

........

..............

.......

1'/ -

-20

20

TJ. JUNCTION TEMPERATURE (OCI

40

............

b::

?<
..........

FIGURE & - ON·STATE CHARACTERISTICS

.........

60

BO

100

1/

/

L

30

J

0

""""

110

/

~

125°C

w

::1

V

20

...

7.0

:::>

/

:z:

::E 3.0

1

2.0
-60

"

/1
I

~

cz:
cz:

...
:::>

,
I

w

'"i5lcz:
...'";;'i

:
,

::l;
~

I

O.B

r-..,

-40

-20

r-...
~
...........

r--.....
:0I'.....
....

I

0
20
40
60
BO
TJ. JUNCTION TEMPERATURE (OCI

--------

~ 200

....

o. 7

0.4

"' r--......

100

120 140

300

I

o. 1

.......

FIGURE 7 - MAXIMUM NON-REPETITIVE SURGE CURRENT
ii:

o. 2

.......

MAIN TERMINAL #2
prSlTIvr

CI

I

o. 3

140

MAIN TERMINAL #1
POSITIVE

I/

.........

/

~ 5.0
i5
....

If

o.5

120

GATE OPEN

I'....
TJ = 25°C

.......
.......

FIGURE 6 - TYPICAL HOLDING CURRENT

/'

50

...

~

.......

20

70

1-0......

TJ. JUNCTION TEMPERATURE (OCI

100

•

OFiF-5TAiE VOLiAGE .112 V-

i'-. r--....

J

5.0
-60

140

.........

r-.., ...... t--..

cz:
~ 20

/
......... .II'

12~ ....-- -...;;

....

w

30

....

dUAORiNT 4

............

o
;: 1.0

!.

I""---

~

............

w

'"~

0

I--

100
70
50

r

-

I""-

TC = BOoC
I = 60 Hz
Surge is preceded and followed by rated current

30

1.2

1.6

2.4

2.B

3.2

3.6

4.4

I

10

NUMBER OF CYCLES

VTM.INSTANTANEOUS ON-5TATE VOLTAGE (VOLTSI

MOTOROLA THYRISTOR DEVICE DATA
3-140

MAC15A Series
FIGURE 8 - THERMAL RESPONSE

w

~

~

0.5

~0.2
-,0

~~
ffi
~
,,:E

~

0;

~

O. 1

ZoJC(tl = ,hi· ReJC

........ '"0

~ ~O.05

0;

z

«

'"
t-

0.02

""

0.0 1
0.1

0.2

0.5

10

20

50

100

200

500

1k

2k

5k

10 k

t. TIME (m.1

•

MOTOROLA THYRISTOR DEVICE DATA
3-141

MAC15AFP
Series

Triacs
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon gate
controlled solid-state devices are needed. Triac type thyristors switch from a blocking to
a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.

ISOLATED TRIACs
THYRISTORS
15 AMPERES RMS
200-800 VOLTS

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

MT2~MTl
STYLE 3

MAXIMUM RATINGS
Symbol

Rating

•

Repetitive Peak Off-State Voltage, Note 1 (TJ
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC15A4FP
MAC15A6FP
MAC15A8FP
MAC15A10FP

=

-40 to +125°C)

Peak Gate Power (TC

=

Average Gate Power (TC

=

+SOOC)

= 2 ~s)
= S.3 ms)

+SOOC, Pulse Width

=

+SOOC, t

Peak Gate Current
Peak Gate Voltage
RMS Isolation Voltage (TA

Unit
Volts

VORM
200
400
600
SOO

On-State RMS Current (TC = +SOOC), Note 2
Full Cycle Sine Wave 50 to 60 Hz.(TC = + 95°C)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC
preceded and followed by rated current

Value

= 25°C, Relative Humidity ... 20%)

IT(RMS)

15
12

Amps

ITSM

150

Amps
Watts

PGM

20

PG(AV)

0.5

Watt

IGM

2

Amps

VGM

10

Volts

VUSO)

1500

Volts

TJ

-40 to +125

OC

Tstg

-40 to +150

OC

Operating Junction Temperature
Storage Temperature Range

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested wi1h a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperatura referance point for all Te measurements is a point on the center lead of the package as close as possible to the plastic body.

MOTOROLA THYRISTOR DEVICE DATA

3·142

MAC15AFP Series
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R6JC

2

·CIW

Thermal Resistance, Case to Sink

R6CS

2.2 (typ)

·CIW

Thermal Resistance, Junction to Ambient

RruA

60

·CIW

Characteristic

ELECTRICAL CHARACTERISTICS (TC

=

25·C unless otherwise noted)
Symbol

Characteristic
Peak Blocking Current (Either Direction)
TJ
Rated VORM @TJ = + 125·C, Gate Open

= 25·C

Peak On-State Voltage (Either Direction)
ITM = 21 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle"" 2%

VTM

Gate Trigger Current (Continuous dc)
Main Terminal Voltage = 12 Vdc, Rl
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)

IGT

=

Min

Typ

Max

Unit

-

-

-

10
2

p.A
mA

1.3

1.6

Volts

IORM

mA

100 Ohms

Gate Trigger Voltage (Continuous dc)
Main Terminal Voltage = 12 Vdc, Rl = 100 Ohms
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
Main Terminal Voltage = Rated VORM, Rl = 10 kG, TJ
All Trigger Modes

-

-

50
50
50
SO
Volts

VGT

=

+ 110·C

-

0.9
0.9
1.1
1.4

2
2
2
2.5

0.2

-

-

Holding Current (Either Direction)
Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA

IH

-

6

40

mA

Turn-On Time
Rated VORM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 /LS, Pulse Width = 2 p.s

tgt

-

1.5

-

p.s

dv/dt(c)

-

5

-

V//Ls

Critical Rate of Rise of Commutation Voltage
Rated VORM, ITM = 21 A, Com mutating dildt
Gate Unenergized, TC = +SO·C

= S Aims,

QUADRANT DEFINITIONS
MT2(+)
QUADRANT II

QUADRANT I

MT2( +), G( -)

MT2( +), G( +)

Trigger devices are recommended for gating on Triacs. They
provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and raliabla
operation.
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES

G(-l

Usage

------+------ G(+l
QUADRANT III

MT2(-), G(-)

QUADRANT IV

MT2(-), G(+)

MBS4991

Vs

6-10 V

7.5-9 V

IS

350 p.A Max

120 p.A Max

VS1-VS2

0.5 V Max

0.2 V Max

Temperature
Coefficient

MT2(-1

General

Part Number

MBS4992

0.02%rCTyp

1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability
such that the voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-143

•

MAC15AFP Series
TYPICAL CHARACTERISTICS
130

~

120

i5

-.... ~
~~

~ 110

~

100

ra =

"."

CONDUCTION ANGLE

o

4

6

8

10

12

14

OFF·STATE VOLTAGE = 12 Vdc_
ALL MODES

2

,.....

~

i'--- I'---

!z

~
a:

:::>

<..>

"

r~
-Ja

,9 90 r
80

1/60"

125°C/

:::;;

~

/

~ ~ 1c'90°
~~
1500 to 180°/
~' ~ r-...
d~ ~ ~
~ :--...

~

~

~
gs

1/300

3

1

a:

'"~

0.7

~

0.5

'"~

.£' O. 3
-60

16

-40 -20

70
16

fi

~

12

~

~_

I

/

50

~ L::..t:

-J a ~ +--+...s-7I'~7~--:;~.

~

~

~ 0~~~--7-~~-~-~-~~~~~
o
4
6
8
10
12
14
16
ITIRMS), RMS·ON·STATE CURRENT lAMP)

/

,!

7

I

5

II

d

,I

,

Figure 2. On-State Power Dissipation
3
dFF.STATE VOLTAGE = 12 Vdc
ALL MODES

2

1

gs
~

§;

o. 5

-- - - --

O.3
-60 -40 -20

o

1

:-- r--

a:

g
~
~

'"
~
>

17

V'

0

~

140

I. lI'125°C

0

8 a = CONDUCTION ANGLE -.,fi'I7"':A..!"'----,,"""'--I-.........J

~

120

= 25°C V/

TJ

0

1

~

100

/

TJ = 125°C--+--I--I----¥--F-.,IF-

I

o

i5

20
40
60
80
TJ, JUNCTION TEMPERATURE 1°C)

r-...

100

20r---,----,---,---,---,----,---.-.-,

~
z

r-.....

Figure 4. Typical Gate Trigger Current

Figure 1. RMS Current Derating

•

.........

"'-

ITIRMS), RMS ON·STATE CURRENT lAMP)

~

.........

w

O.7

20

40

60

80

100

O. 7
O. 5
O. 3
0.2

120

140

TJ. JUNCTION TEMPERATURE 1°C)

O. 1

0.4

,

,:
I
0.8

1.2
1.6
2
2.4
2.8
3.2
3.6
INSTANTANEOUS ON·STATE VOLTAGE IVOLTSI

V'j',

Figure 5. Maximum On-State Characteristics

Figure 3. Typical Gate Trigger Voltage

MOTOROLA THYRISTOR DEVICE DATA
3-144

4.4

MAC15AFP Series

\.

cw

~

1L

~

a:

I-

Z

w

0.7

z

0

Z

w

a:
a:

::J

~ 100

'"
a:

.......

::J

~

...........
.............

0.5

:J:

~

....

~

-40

-20

0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE 1°C!

120

140

Figure 6. Typical Holding Current

~
z

;5

0.5

r-- I--

~

50
30
1

-

---

70

~

~

0.3
-60

-----

200

I-

"

~

'"9

~

i'-..

0

a:
a:
::J
u

300

I
GATE OPEN
APPLIES TO EITHER DIRECTION

TC = 80°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT

10

3
5
NUMBER OF CYCLES

Figure 7. Maximum Nonrepetitive Surge Current

~

en

en
i':! c 0.2

~

it:;!

ffi ~ o. 1

....... fZ/lJClt! = rlt!- R6JC

E~

15 ~0.05
en

~

:g 0.02
0.01
0.1

0.2

0.5

20
50
100
t, nME(ms!
Figure 8. Thermal Response
10

200

500

1k

2k

5k

10k.

R_~~~_"~'·f;;:N1fiii.iW1Hit:illitd;~~'~'~:.rI1._ _a_itB_M~~.~~
MOTOROLA THYRISTOR DEVICE DATA
3-145

MAC20A
MAC25A
MAC50A

Triaes
Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and consumer applications for full-wave control of ac loads such as appliance controls, power supplies, solid-state relays, heating controls, motor controls, welding equipment, and power switching systems.
•
•
•
•
•

TRIACs

15,25 and 40
AMPERESRMS
200 thru 800 VOLTS

Electrically Isolated From Mounting Base
Isolation Voltage of 2500 Volts RMS
Quick ConnectlDisconnect Terminals
Glass Passivated and Center Gate Geometry
Gate Triggering Guaranteed in Four Modes

CASE 326-01
STYLE 2

•

MAXIMUM RATINGS (TJ

=

-40 to + 125°C unless otherwise noted.)
MAC series

Symbol

Rating

Unit
20A

Repetitive Peak Off-State Voltage
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC20Al25A150A4
MAC20Al25A150A6
MAC20Al25A150AB
MAC20Al25A150A 10

25A

SOA
Volts

VORM
200
400
600
BOO

RMS On-State Current
(TC = 1000C for MAC20A)
(TC = gooC for MAC25A)
(TC = 700C for MAC50A)

IT(RMS)

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz)

-

25
-

-

ITSM

150

250

300

Amps

12t

90

260

375

A 2s

PG(AV)

O.!i

0.5

0.75

Watt

IGM

2

2

4

Amps

Circuit Fusing
(t = 1 to B.3 ms)
Average Gate Power
Peak Gate Current (10 I£S)
Operating Junction Temperature Range

TJ

Storage Temperature Range

Tstg

MOTOROLA THYRISTOR DEVICE DATA
3-146

Amps

15

o to

40

+125

-40 to + 125

°C
°C

MAC20A • MAC25A • MAC50A
THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, Junction to Case (OC)
(Apparent) Note 1

Maximum Value

Unit

1.61 1.5 1 1.4
1.3
1
0.95

°CIW

R8JC

Note 1. Defmed as: (125°e - Tel for a 60 Hz full sine wave.

PAY

ELECTRICAL CHARACTERISTICS
(All voltage polarity reference to MT1; applies to either polarity of MT2 to MT1; TC
Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TC = 25°C
TC = 125°C

IORM'
IRRM

Peak On-State Voltage
(Pulse Width = 1 ms, Outy Cycle 2%)
(lTM = 21 A Peak)
(lTM = 35 A Peak)
(lTM = 56 A Peak)

VTM

IGT

Gate Trigger Voltage (Continuous dc)
(Vo = 12 Vdc, RL = 50 Ohms)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2( -), G( +)
(VO = Rated VORM, RL = 10 kO, TC = 125°C)

VGT

MAC25A

MAC50A

Min Typ Max Min Typ Max Min Typ Max

-

-

10
2

-

-

10
2

-

-

10
2

Unit

p.A
mA
Volts

mA

-

IH

=

25°C unless otherwise noted.)

- 1.3 1.6 - - - - - - - - - 1.4 1.7 - - - - - - - - - 1.65 1.75

MAC20A
MAC25A
MAC20A

Gate Trigger Current (Continuous dc)
(VO = 12 Vdc, RL = 50 Ohms)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+)

Holding Current
(Vo = 12 Vdc, Gate Open, RL

=

MAC20A

15
30

50
75

-

-

20 70 35 100 -

20
35

70
100
Volts

-

0.9 2
1.4 2.5

0.2

-

-

6

-

-

- -

-

1.1
2
1.3 2.5

0.2

-

-

10

-

10

75

-

-

1.1 2
1.3 2.5

0.2

40

-

75

mA

40 Ohms)

Turn-On Time
(Vo = Rated VORM)
(lTM = 21 A,IG = 120 mAl
(lTM = 35 A, IG = 200 mAl
(lTM = 56 A, IG = 200 mAl

tgt

-

MAC20A
MAC25A
MAC50A

Critical Rate-of-Rise of Commutation Voltage
(VO = Rated VORM, ITM = 21 A,
Com mutating di/dt = 8 Aims, TC = 100°C)
(VO = Rated VORM, ITM = 35 A,
Com mutating di/dt = 16 Aims, TC = 90°C)
(VO = Rated VORM, ITM = 56 A.
Com mutating di/dt = 22 Aims, TC = 70°C)

IJ.S

-

- - - - - 1.5
- -

1.5

-

-

- - -

1.5

-

dv/dt(c)
MAC20A

- - - - - - - - - 5 30 - - - - - - - 5 30 - 100 - 100 - - 75 5

MAC25A
MAC50A

Critical Rate-of-Rise of Off-State Voltage (Exponential Rise)
(VO = Rated VORM, Gate Open, TC = 125°C)

V/IJ.S

dv/dt

30

MOTOROLA THYRISTOR DEVICE DATA
3-147

V//Ls

MAC20A • MAC25A • MAC50A
FIGURE 1 - CURRENT DERATING
~

125

:::J

~
~

i'!i

...

~

~

_ 95

~

c..>

:-.....
::--.......

" "- -........: I'-............

105

w

~

~~

115

0:

"

,",0

<~

/

./
MAC50A / .

I'-..

r-...

"

85

j

~

75

MAC20A

:::J

-

MAC25A

::E

~

FIGURE 2 - MAXIMUM POWER DISSIPATION

MAC25A

.........

I'..

MAC20A .......: y /

"-

..

65
55

~
~ ,/

lMAC50t~

Q.. V

~ P""

::E

...

/'

/' ./

0

~~

8

16

24

32

40

8.0

16

24

32

40

iT(RMS)' RMS ON·STATE CURRENT (AMPERES)

IT(RMS). RMS ON·STATE CURRENT (AMPERES)

II

MOTOROLA THYRISTOR DEVICE DATA
3-148

......

MAC97,A,B
Series

Triacs
Silicon Bidirectional Triode Thyristors
· .. designed for use in solid state relays, MPU interface, TTL logic and any other
light industrial or consumer application. Supplied in an inexpensive TO-92 package
which is readily adaptable for use in automatic insertion equipment.
• One-Piece, Injection-Molded Unibloc Package
• Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of
Trigger Sources, and Especially Suitable for Circuits that Source Gate Drives.
• All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters
and Reliability
• Available in TO-S or TO-1S Leadforms

TRIACs
0.6 AMPERE RMS
200 thru 600 VOLTS

CASE 29-04
(TO-226AAI
STYLE 12

MAXIMUM RATINGS
Symbol

Rating
Repetitive Peak Off-State Voltage
(TJ = -40 to +110°C) Note 1
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC97or
MAC97Aor
MAC97B-

Value

VORM

4
6
8

Unit
Volts

200
400
600
IT(RMS)

0.6

Amp

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 110°C)

ITSM

8

Amps

Circuit Fusing Considerations
(TJ = -40 to +110°C,t = 8.3 ms)

12t

0.26

A 2s

On-State RMS Current
(Full Cycle Sine Wave 50 to 60 Hz, TC

=

+ 50°C)

Peak Gate Voltage (t '" 2 /Ls)

VGM

5

Volts

Peak Gate Power (t '" 2 /Ls)

PGM

5

Watts

PG(AV)

0.1

Watt

IGM

1

Amp

TJ

-40 to +110

°c

Tstg

-40 to +150

°c

Average Gate Power (TC

= 80°C, t

'" 8.3 ms)

Peak Gate Current (t '" 2 /Ls)
Operating Junction Temperature Range
Storage Temperature Range

MOTOROLA THYRISTOR DEVICE DATA
3-149

•

MAC97,A,8 Series
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R8JC

75

°CIW

Thermal Resistance, Junction to Ambient

ROJA

200

°CIW

Characteristic

ELECTRICAL CHARACTERISTICS (TC

25°C, and Either Polarity of MT2 to MTl Voltage unless otherwise noted.)

=

Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 110°C

IORM,IRRM

Peak On-State Voltage (Either Oirection)
(lTM = 0.85 A Peak; Pulse Width"" 2 ms, Outy Cycle"" 2%)
Gate Trigger Current (Continuous dc)
(VO = 12 Vdc, Rl = 100 Ohms)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, Rl = 100 Ohms)
MT2( +), G( +) All Types
MT2( +), G( -) All Types
MT2( -), G( -) All Types
MT2( -), G( +) All Types
(VO = Rated VORM, Rl = 10 k ohms, TJ = 110°C)
MT2( +), G( +); MT2( -), G( -); MT2( +), G( -) All Types
MT2( - ), G( + ) All Types

VGT

Holding Current
(Vo = 12 Vdc, ITM

= 200 mA. Gate Open)

Gate Controlled Turn-On Time
(VO = Rated VORM, ITM = 1 A pk, IG

•

VTM

= 25 mAl

Critical Rate of Rise of Commutation Voltage
(VO = Rated VORM, ITM = 0.84!AA pk)
(Com mutating dildt = 0.32 Alms, Gate Unenergized, TC
Critical Rate of Rise of Off-State Voltage
(Vo = Rated VORM Exponential Waveform, TC

=

Min

-

Typ

-

Max

Unit

-

8

10
0.1

mA

-

-

1.9

Volts

See Table 1

!AA

mA
Volts

-

-

-

2
2
2
2.5

0.1
0.1

-

-

IH

-

-

10

mA

tgt

-

2

-

",s

dv/dt(c)

-

5

-

V/",s

dvldt

-

25

-

V/",s

-

= 50°C)

'10°C)

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking voltage such that the
voltage applied exceeds the rated blocking voltage.

QUADRANT DEFINITIONS
MT2(+1
QUADRANT II

QUADRANT I

MT2(+l.G(-)

MT2(+1. G(+)

G(-I

TABLE 1 - MAXIMUM GATE TRIGGER CURRENTS
(VD =12 V, RL =100 n)
Quadrant
and Polarity

G(+I
QUADRANT III

QUADRANT IV

MT2(-),G(-)

MT2(-),G(+)

Unit

97A

97B

I
MT2(+I. G(+I

10

5.0

3.0

mA

II
MT2(+I, GH

10

5.0

3.0

mA

III
MT2(-I,GH

10

5.0

3.0

mA

IV
MT2(-I, G(+I

10

7.0

5.0

mA

MOTOROLA THYRISTOR DEVICE DATA
3-150

MAC Series
97

MAC97,A,B Series
FIGURE 1 - RMS CURRENT DERATING
IR .......... : c.. T_penolUn)

110
100

FIGURE 2 - ON-STATE CHARACTERISTICS

-......

60

"

40

t'--..

""i"':--,
....

""

TJ=1100 C

./.

10

0

I.V

.........
10

NOTES: 1. CASE TEMPERATURE REFERENCE
POINT ISTHE FLAT SlOE OF CASE.

or-or--

2. CURVE APPLIES FOR 50-60 Hz FUll
CYCLE SINE WAVE OF CURRENT.

0::
::;;

100

200

300

400

500

600

100

;:s
'"
'"

800

il

04

1/

I

'-'
w

~
zo

FIGURE 3 - RMS CURRENT DERATING
IRafennce: Ambient Temperature)

01

'":::>
8z

-............

0I

~

z

~ 00 6

..........

~

..........
0

~. 004

..........

0

"

00 2

NOTE: CURVE APPLIES FOR 50-60 Hz " "
OF FULL CYCLE SINE WAVE
OF CURRENT.

f'...

......"

0
50

L

;;)

ITlRMS). ON·STATE CURRENT (rnA)

I--

I

6

~
>-

0

I!I"""

/.. V 25 0 C

...... 1'0..

0

~

..... ~

.., lo"'"

100

200

300

00 I

"

000 6
04

400

tr(RMS). ON·STATE CURRENT (rnA)

20

11

18

36

44

51

60

VTM.INSTANTANEOUS ON·STATE VOLTAGE (VOL TSI

FIGURE 4 - ON-STATE POWER DISSIPATION
~ 1.0

...

~

i5

0.8

~ r-in
iii 0.6 r--

CURVE APPLIES FOR 511-60 Hz
FULL CYCLE SINE WAVE
OF CUjRENT.

~
~

TJ = I100C

o. 4

L

/'

'"~

/'

;;;: O. 2

/'

;;

e'"

/

/

a:

o

V

./
1.0

100

200

300

400

500

600

100

BOO

ITlRMS). ON-STATE CURRENT (rnA)

JiI!g,~j;i".. ,J'> .~. ·"i.t iN 'lfU"!'<1"\j;) }f +~. l\ i'YtJi1f-ill'o~~~"""'·lolII'~J~~~~~~",
_
.............
_

!'\i.~LKi. ""

MOTOROLA THYRISTOR DEVICE DATA
3-151

MAC97,A,8 Series
FIGURE 6 - NORMALIZED GATE
TRIGGER VOLTAGE

FIGURE 5 - NORMALIZED GATE
TRIGGER CURRENT

~

2.2

...!2
a:
a:
~

...a:

3.0

2.0

'":!a:

1.S

~

..........

.........

:;; 1.0

~~1. 2 1 - -

ALL QUADRANTS----:
VD = 12V
RL= 100n_ f - -

!C

'"III

..........

N

~ 0.3

1.6

~S
1.4
CO

..........

'"'"E

ffi

--- -r--.

.... '"

~~1. 0

a: ....

li go. 8

r......

::E

......

a:

~

ALL QUADRANTS _
Vo = 12 V
RL=100n
-

0.6

--

>

o

0.4

z

;

-40

+20

-20

+40

+60

+80

+100

+120

-40

-20

20

TJ. JUNCTION TEMPERATURE (OC)

40

r-..

r-

so

60

100

120

TJ. JUNCTION TEMPERATURE (OC)

FIGURE 7 - NORMALIZED HOLD
CURRENT

FIGURE 8 - MAXIMUM ALLOWABLE
SURGE CURRENT
10

<

oS
~ 3.0
~ 2.0

--

u

o

•

S
:z:

1.0

o

..~

-~

r--

VD = 12 V
ITM=200mA

== :::::::::::::

Z

~

~

0.5

~ 0.3
o

r-------

0.2
0.1
-40

+20

+40

+SO

+SO

+100

1.0

+120

~

110 0 C

.1

1" 60 Hz,

SUlge is P"ieui d

10
-20

TJ

2.0

3.0

1""--.......

5.0

I

rll fi"ii"l ily "tedlcurlO"lt.
10

30

50

100

NUMBER OF CYCLES

TJ. JUNCTION TEMPERATURE (DC)

FIGURE 9 - THERMAL RESPONSE

§

10

..'"

0.5

..

0.2

N

::;
a:

--

o

~

...'-'
z

In

i:ia:

I

~

005

....

~ f-

ZHJC(t) = r(t) • RHJC

f:;

...
...u;!Z

:t:

:i

:=

0.02

00 1

20

5.0

10

20

50

200

100

t, TIME

500

10k

2.0 k

SDk

10 k

20 k

Ims)

u;U~.tt..~"'~lf.&W~~~~~~;H-t.m;~","lmtf~~Uti
MOTOROLA THYRISTOR DEVICE DATA
3-152

:

MAC210A
Series

Triacs
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with
positive or negative gate triggering.

TRIACs
10 AMPERES RMS
200 thru 800 VOLTS

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

CASE 221A-04
(T0-220AB)

STYLE 4

MAXIMUM RATINGS
Rating
Repetitive Peak Off-State Voltage, Note 1
(TJ = -40 to + 125'C)
1/2 Sine Wave 50 to 60 Hz, Gate Open

Symbol

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +70'C)
Preceded and followed by Rated Current
Circuit Fusing Considerations
(TC = +70'C, t = 1 to B.3 ms)
Peak Gate Power
(TC = + 70'C, Pulse Width

= 10/Ls)
= + 70'C, t = B.3 ms)

Peak Gate Current
(TC = + 70'C, Pulse Width

Unit
Volts

200
400
600
BOO

MAC210A4
MAC210A6
MAC210AB
MAC210A10

On-State Current RMS (TC = + 70'C)
Full Cycle Sine Wave 50 to 60 Hz

Average Gate Power (TC

Value

VORM

= 10!£S)

Operating Junction Temperature Range
Storage Temperature Range

IT(RMS)

10

Amps

ITSM

100

Amps

12t

35

A 2s

PGM

20

Watts

PG(AV)

0.35

Watt

IGM

2

Amps

TJ

-40 to + 125

·C

Tstg

-40 to +125

·C

•

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that

the voltage applied exceeds the rated blocking voltage.

, ~ri;Ft':r~;i;j:i:13.~:J.~:t:~:::+J:y~J,,:t~5:"'!t.>j;,~:Y'hk4jJii':;j.;t1J/!iI~~~Jj:;;j;JJf;rN~'~~~~f~"i1iIJ1f"~
MOTOROLA THYRISTOR DEVICE DATA
3-153

MAC210A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

= 25°C unless otherwise noted)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25°C
TJ = +125°C

IDRM,IRRM

Peak On-State Voltage (Either Direction)
(lTM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle'" 2%)

•

VTM

Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)

IGT

Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
(Main Terminal Voltage = Rated VDRM, RL = 10 k ohms,
TJ = +125°C)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-); MT2(-), G(+)

VGT

Min

Typ

Max

Unit

-

-

10
2

mA

1.65

Volts

-

1.2

tJA

mA

-

12
12
20
35

50
50
50
80
Volts

-

0.9
0.9
1.1
1.4

2
2
2
2.5

0.2

-

-

Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA, TC = + 25°C)

IH

-

6

50

mA

Turn-On Time
(Rated VORM, ITM = 14 A)
(lGT = 120 mA, Rise Time = 0.1 p.s, Pulse Width = 2 p.s)

tgt

-

1.5

-

p.s

dv/dt(c)

-

5

-

V/p.s

dv/dt

-

100

-

V/p.s

Critical Rate of Rise of Commutation Voltage
(Rated VORM, ITM = 14 A. Commutating di/dt = 4.3 Aims,
Gate Unenergized, TC = 70°C)
Critical Rate of Rise of Off-State Voltage
(VO = VOROM, Exponential Voltage Rise, Gate Open, TC = + 70°C)

MOTOROLA THYRISTOR DEVICE DATA
3-154

MAC210A Series
FIGURE 2 - POWER DISSIPATION

FIGURE 1 - CURRENT DERATING

130

..........

120

5iijc:; 110

CbNDU~ON A~GLE = ~600

..........

z 12.0

..........

..........

lli

10.0

I......

8.0

~

.........
!'-...

~f.i

~~ 90

.......

:Ii:li

~= 80

.........

:Ii

'"

..........

70

..........

i

~

~

2.0

3.0

IT(RMS~

4.0

5.0

6.0

7.0

8.0

9.0

IL
./

4.0

VI/"

2.0

o

10.0

'" "

./
1.0

2.0

3.0

IT(RMS~

RMS ON·STATE CURRENT (AMPS)

FIGURE 3 - MAXIMUM ON·STATE CHARACTERISTICS

"

,/

6.0

o ./

60

1.0

./

fi

~Ii! 100

o

CON~UcnO~ ANG~ = 36~

C>

elL.

~

14.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

RMS ON·STATE CURRENT (AMPS)

FIGURE 4 - MAXIMUM NON-REPETITIVE SURGE CURRENT

100

100

50

,...

/.

,V
Tr~5°C

", TJ = 125°C
20

10

lO

7.0

10

NUMBER OF CYCLES

5
0.2

FIGURE 5 - TYPICAL GATE TRIGGER VOLTAGE

O. 1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
Yr. INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

2.0

S
!::!

~ 1.6

--- -

a:

C>

~

~ 1.2

......

!:i
C>

:>

!i:

0.8

Ii

0.4

~

'"
~ o

-60

-40

-w

-- -

0
W
40
Tc. CASE TEMPERATURE 1°C)

MOTOROLA THYRISTOR DEVICE DATA
3-155

OFF·STATE VOLTAGE = 12 VtIc _
ALL MODES

60

60

MAC210A

Series

FIGURE 6 - TYPICAL GATE TRIGGER CURRENT

c

FIGURE 7 - TYPICAL HOLDING CURRENT
2.8

2.0

~

~ 1.6

'"~

.......

C>

~ 1.2

........

~ 24

OFF·STATE VOLTAGE = 12 Vdc _
All MODES
........

~

~ 20
C>

;:- 16

I"--

8§
~

u

r--... ~

'"'"
~

'"~
u

12

'"~

08

~ 0.4

C>

'">'-

~

0
-60

.......

.......

i:i'i

i'

ffi 0.8

S'

f"""-..

'"

r--...

f'...

......

""

::t:

0.4

.......

o
-40

-20
20
40
TC. CASE TEMPERATURE 1°C!

60

-60

80

-40

-20
0
20
40
TC. CASE TEMPERATURE 1°C)

60

80

FIGURE 8 - THERMAL RESPONSE
10

'"~
~

os

~

a: 0 0.2

~~

r-

~ ~ 0.1

V-

.....- i-"'"
I

ZOJCltl ~ fltle ROJe

:r:l!

,..'"
,..0

~ ~005

..'"
u;

z

.....

-

0.02
0.0 1
0.1

0.2

0.5

1.0

2.0

5.0

20

so

100

200

500

2.0 k

1.0 k

5.0 k

1 k

t.TlME Im'l

•

1. :.r

. 1 1 I f I I 8 I I I i l l ·. .
MOTOROLA THYRISTOR DEVICE DATA
3-156

1111.

•

MAC210AFP
Series

Triaes
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon gate
controlled solid-state devices are needed. Triac type thyristors switch from a blocking to
a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

ISOLATED TRIACs
THYRISTORS
10 AMPERES RMS
200-800 VOLTS

~

MT2~MTl

STYLE 3

MAXIMUM RATINGS
Symbol

Rating
Repetitive Peak Off-State Voltage, Note 1 (TJ
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC210A4FP
MAC210A6FP
MAC210A8FP
MAC21 OAl OFP
On-State RMS Current (TC

= -40 to + 125°C)

Circuit Fusing (TC

= + 70°C)

= + 70°C, t = 1 to 8.3 ms)

Peak Gate Power (TC

= + 70°C, Pulse Width = 10 !Ls)

Average Gate Power (TC
Peak Gate Current (TC

= + 70°C, t = 8.3 ms)

= + 70°C, Pulse Width = 10 !Ls)

RMS Isolation Voltage (TA

Unit
Volts

200
400
600
800

= + 70°C) Full Cycle Sine Wave 50 to 60 Hz, Note 2

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC
preceded and followed by rated current

Value

VORM

= 25°C, Relative Humidity .. 20%)

IT(RMS)

10

Amps

ITSM

100

Amps

12t

41

A 2s
Watts

PGM

20

PG(AV)

0.35

Watt

IGM

2

Amps

V(lSO)

Operating Junction Temperature
Storage Temperature Range

1500

Volts

TJ

-40 to

+ 125

°c

Tstg

-40 to

+ 125

°c

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

RIIJC

2.2

°CIW

Thermal Resistance, Case to Sink

RIICS

2.2 (typ)

°CIW

Thermal Resistance, Junction to Ambient

ROJA

60

°CIW

Characteristic

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

MOTOROLA THYRISTOR DEVICE DATA
3-157

MAC210AFP Series
ELECTRICAL CHARACTERISTICS (TC = + 25°C unless otherwise noted)
Characteristic

•

Symbol

Peak Blocking Current (Either Direction) Rated VORM, Gate Open
TJ = 25°C
TJ= +125°C

IORM

Peak On-State Voltage (Either Direction)
ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle'" 2%

VTM

Gate Trigger Current (Continuous dc)
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 p's
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)

IGT

Gate Trigger Voltage (Continuous dc)
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 p.s
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
Main Terminal Voltage = Rated VORM, RL = 10 kG, TJ = + 125°C
All Trigger Modes

VGT

Min

-

Typ

Max

Unit

-

-

-

10
2

pA
mA

-

1.2

1.65

Volts
mA

-

-

12
12
20
35

50
50
50
80
Volts

-

0.9
0.9
1.1
1.4

2
2
2
2.5

0.2

-

-

Holding Current (Either Direction)
Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA, TC = +25°C

IH

-

6

50

mA

Turn-On Time
Rated VORM, ITM = 14 A, IGT = 120 mA,
Rise Time = 0.1 p.s, Pulse Width = 2 p.s

tgt

-

1.5

-

p.s

dv/dt(c)

-

5

-

V/p.s

dv/dt

-

100

-

V/p.s

Critical Rate of Rise of Commutation Voltage
Rated VORM, ITM = 14 A, Commutating di/dt = 4.3 Alms,
Gate Unenergized, TC = +70°C
Critical Rate of Rise of Off-State Voltage
(VO = VOROM, Exponential Voltage Rise, Gate Open, TC = + 70°C)

MOTOROLA THYRISTOR DEVICE DATA
3·158

MAC210AFP Series
TYPICAL CHARACTERISTICS

E
130
w
~ 120 -......."
a:

~

~

...........

~
w

"'" 0" ,

5 100
~

~ 90
::>

::;;

~

0

in
i5

8

V-

"'-

./

ffi

~

,

6

w

..........

80

~w

...........

345678
IT(RMS!, RMS ON-STATE CURRENT lAMPS!

10

0 ..;-'"

"'-

./

o

Figure 2_ Power Dissipation

100

100

50

~

ii:

::;;

,V

20

I-

'"
::>

V>

aw
z
~
z

~

n

(\

~"'t'~

40

~ 20

Ii'" TJ ='1250(;
1

60

'"
~

TJ = 25°C

~

::>

C\

Z

w
a:
a:
::>
u
w
a:

10

V>

-r--L

I-

(3

!;i
Ii?

...............

80

S

./

Z

g§

10

2345678
ITIRMS!, RMS ON-STATE CURRENT lAMPS!

Figure 1_ Current Derating

iC

./
./

.,/

2

$o

V

V

./

~

"'"

70

2

./

a
~
V>

......

,9 60 0

CON~UCTlO~ ANGL~ = 36~0

12

z

...........

::;; 110

~
::;;

14

~

cONDUcrlDN A~GLE =1360°

a:

- --r-i""'-

r--.

TC = 70°C

r- f =60Hz
r- SURGE lSI PRECEDfD AN~ FOL~OWfD Br RAT~D CUIRRE~T-e--

o

W

1
NUMBER OF CYCLES

~
V> 0.5
:0=

Figure 4_ Maximum Nonrepetitive Surge Current

.~

0.2
0.1
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4
"T, INSTANTANEOUS ON-STATE VOLTAGE IVOLTS!

Figure 3_ Maximum On-State Characteristics

c

~

~
~

~

1.6

~

-r-.

w

~ 1.2

!:;

~

a:

~ 0.8

-

OFF-STATE VOLTAGE = 12 Vdc_
ALL MODES

-.... r-.

r-- r-.

'"j!:
w

!;( 0.4

-

'"

~ o

-60

-40

-20
0
20
40
TC, CASE TEMPERATURE 1°C!

60

Figure 5. Typical Gate Trigger Voltage

MOTOROLA THYRISTOR DEVICE DATA
3-159

BO

MAC210AFP Series
2.8

Ei
~

~

co:
o

......

1.6

~

0---

~
co:
::;)

.........

~ 2.4

OFF-STATE VOLTAGE = 12 Vdc_
ALL MODES

......

1.2

r-....

u

~

co:
o

I'-...

~ 0.8

.........
...............

!Z
a~

1.2

'"~

0.8

,
......

.........

.........
I'-,..

i"-..

is

~ 0.4
S'

..........

~ 1.6

'"~
'"0=-

2

~ 0.4

0

o

-60

-40

-20

0

20

40

60

60

-60

-~

TC, CASE TEMPERATURE ('CI

-~

~

:---..

~

60

60

TC, CASE TEMPERATURE ('CI

Figure 6_ Typical Gate Trigger Current

Figure 7. Typical Holding Current

1
w

~

~
ffi

0.5

....- r---

~ i5 O. 2

V

«~

~~ O. 1
!'l!:;;

-ZOJC(tl = r(ll_ R8JC

0--- co:
0---0

15 ~ 0.05
tiS

•

~

:g

0.02
0.0 1

0.1

0.2

0.5

20

50

100

200

500

1k

2k

5k

10 k .

t, TIME Imsl

Figure 8_ Thermal Response

••a:une=rJ!!f!tll

.·IDI ""_~._.D'n.ii."It:J'lIAfIIt.Rl.ii;
MOTOROLA THYRISTOR DEVICE DATA
3-160

MAC212A
Series

Triacs
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with
positive or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

TRIACs
12 AMPERES RMS
200 thru 800 VOLTS

O~----;'~G
MT2
~

MT1

o

CASE 221A-04
(TO-220ABI
STYLE 4

MAXIMUM RATINGS
Rating

Symbol

=

Repetitive Peak Off-State Voltage, Note 1 (TJ
1/2 Sine Wave 50 to 60 Hz, Gate Open

-40 to + 125°C)

On-State Current RMS (TC = +S5°C)
Full Cycle Sine Wave 50 to 60 Hz

Circuit Fusing Considerations (TC
Peak Gate Power (TC

=

Average Gate Power (TC
Peak Gate Current (TC

=

+S5°C, t

+S5°C, Pulse Width

=

=

+S5°C, t

=

+S5°C)

= 1 to S.3 ms)
= lOI£S)

= S.3 ms)
=

+S5°C. Pulse Width

lOI£S)

Operating Junction Temperature Range
Storage Temperature Range

Unit
Volts

VORM

MAC212A4
MAC212A6
MAC212AS
MAC212A10

Peak Non-Repetitive Surge Current (One Full Cycle. 60 Hz, TC
preceded and followed by Rated Current

Value

200
400
600
SOO
IT(RMS)

12

Amp

ITSM

100

Amp

12t

35

A 2s

PGM

20

Watts

PG(AV)

0.35

Watt

IGM

2

Amp

TJ

-40 to +125

°c

Tstg

-40 to +150

°c

•

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that
the voltage applied exceeds the rated blocking voltage.

~',#L",,-_,'f;"

·,j"''''''''iJj·..;,'.II;!,:~.t'¥.'''""",,,,~_.i~"··''#"ti';f!4,.4'J:'>J.''<~~'lii''''lIL~

~~D""'·;~";,cKj:, .WR;~~""t7\.i~~·'i"r7,')!}f;fDl#~............:c&~'~

MOTOROLA THYRISTOR DEVICE DATA

3-161

MAC212A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

•

=

+25°C unless otherwise noted)

Characteristic

Symbol

Peak Blocking Current (Either Direction) Rated VDRM, Gate Open
TJ = 25°C
TJ = +125°C

IDRM

Peak On-State Voltage (Either Direction)
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle", 2%

VTM

Gate Trigger Current (Continuous de)
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
MT2(+), G(+)
MT2(+), G(-)
MT2( -), G( -)
MT2(-), G(+)

IGT

Gate Trigger Voltage (Continuous de)
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
Main Terminal Voltage = Rated VDRM, RL = 10 k!l, TJ = + 125°C
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-); MT2(-), G(+)

VGT

-

10
2

mA

-

1.3

1.75

Volts

/LA

mA
12
12
20
35

50
50
50
SO
Volts

-

0.9
0.9
1.1
1.4

2
2
2
2.5

0.2

-

-

-

6

50

tgt

-

1.5

-

/LS

dv/dt(c)

-

5

-

V//Ls

dv/dt

-

100

-

V//Ls

~

:::>

!;;:

ffi 115

-- -.....

a..

~

~

~

~ 95 J--

85 -

rr

Q"

75

S
~ 24

,

R:' ::::::::: ~
~~~

"
riJ\y

0

-J

Q

z

o

r1\i
I

- r-

-J"j-

a = JO°

~ :::-.....

" ""t'.. "'-

'""-

60°

goo

I-- r
15 16r- r-ua::
en

-

~

-

./de-

de- c--

S- 4. 0

14

0

-

.&l

h
0
~ 4 F::::
:;..",:

_f'""

2.0

~
~ /

......

'"

goo
/60"
/ ' J00

r-

~

4.0
6.0
8.0
10
ITIRMSI. RMS ON-STATE CURRENT IAMPI

MOTOROLA THYRISTOR DEVICE DATA
3-162

,.,

/ . ;...'" . / /"

~

~ B.0

/::;.-"

//

2

-

::;.-" a = 180"

CONDUCTION ANGLE

w

180° I--

12

...l"



20

I'

V

v

!a

r-

~

-....

r- t---.

I

I-CYCLE -

1-+

5.0
,""

c:>

..

TJ= 25°C

TC= 70°C
1=60 Hz

r---

V TJ = 125°C

~ 2.0

ez

~SUrge IS prec1eded ani talljWed

o

j! 1.0

z

~
!;

-....

r\

V

10

'-'

t;;
Z

r--.L

(\1

10

20

t rr

ed current

30

50

70

10

NUMBER OF CYCLES

O. 5

£O. 2
O. 1

FIGURE 5 - TYPICAL GATE TRIGGER VOLTAGE

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4

2.0

Yr. INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

ffi

!:j
~ 16

-- -- -

OFF-STATE VOLTAGE = 12 Vdc _
ALL MODES

a::

c:>
~

r-..

~

'" 1.2

13c:>
>
a::

~

r-

O. 8

'"
~
~

~

,....

0.4

o

-60

-40

-w

0

w

~

60

80

TC. CASE TEMPERATURE (OC)

FIGURE 6 - TYPICAL GATE TRIGGER CURRENT

FIGURE 7 - TYPICAL HOLDING CURRENT
2.8

2.0

ffi

!:j

~ 1.6
a::

........

c:>

~

~ 1.2

a::
a::

:::>
u

ffi 0.8

b-. .......

ffi

OFF· STATE VOLTAGE = 12 Vdc _
ALL MODES

'"

2.4

!:j

~ 2.0
a::

c:>

..........

~ 1.6

......

~

I'--

'"

a::

I'--

§ 1.2
'-'

..........

'"'"

'"~

~

["..

.......
r-....

0.8

I""-..

c:>

~ 0.4

..........

~

~ 0.4

'"

o

o
-60

•

-40

-20
0
20
40
TC. CASE TEMPERATURE (0C)

60

80

-60

-40

-20
0
20
40
TC. CASE TEMPERATURE (OC)

60

80

~~r~~
. ··~~~~~~~~~a.~!sWE""~RI~
MOTOROLA THYRISTOR DEVICE DATA
3-163

MAC212A Series
FIGURE 8 - THERMAL RESPONSE
10
w

~

0.5

~

--

0;

~0

0.2

~~

«

~
",,, o. 1
1-0:
1- 0

i:5

~o.o 5

....- ....ZOJC(t)

=,It) - ROJC

500

1.0k

0;

z
~

I-

0.0 2

~

0.0 1
0.1

0.2

0.5

1.0

2.0

5.0

20

50
t,T1ME

100

200

(m,)

MOTOROLA THYRISTOR DEVICE DATA
3-164

2.0k

5.0 k

10 k

MAC212AFP
Series

Triaes
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon gate
controlled solid-state devices are needed. Triac type thyristors switch from a blocking to
a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

MT2~MTl

ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200-800 VOLTS

~
STYLE 3

MAXIMUM RATINGS
Rating
Repetitive Peak Off-State Voltage, Note 1 (TJ
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC212A4FP
MAC212A6FP
MAC212A8FP
MAC212A10FP
On-State RMS Current (TC

=

Symbol

=

-40 to + 125'C)

Circuit Fusing (TC

=

+85'C, t

=

+85'C) Full Cycle Sine Wave 50 to 60 Hz, Note 2

Average Gate Power (TC
Peak Gate Current (TC

=

=

=

+ 85'C, t

=

=

+ 85'C)

= 10/Ls)

8.3 ms)

+85'C, Pulse Width

RMS Isolation Voltage (TA

=

1 to 8.3 ms)

+85'C, Pulse Width

Unit
Volts

200
400
600
800

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC
preceded and followed by rated current

Peak Gate Power (TC

Value

VDRM

=

10/Ls)

25'C, Relative Humidity .. 20%)

Operating Junction Temperature
Storage Temperature Range

IT(RMS)

12

Amps

ITSM

100

Amps

12t

35

A 2s
Watts

PGM

20

PG(AV)

0.35

Watt

IGM

2

Amps

VUSO)

1500

Volts

TJ

-40 to + 125

·C

Tstg

-40 to +150

·C

•

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

Characteristic

RIIJC

2.1

'CIW

Thermal Resistance, Case to Sink

RIICS

2.2 (typ)

'CIW

Thermal Resistance, Junction to Ambient

RIIJA

60

'CIW

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

•

1

~~~~·.~;~gu~Dft~~. . . . . . . .~~~. . . . . . . .
MOTOROLA THYRISTOR DEVICE DATA
3-165

MAC212AFP Series
ELECTRICAL CHARACTERISTICS (TC

= + 25°C unless otherwise noted)

Symbol

Charactaristic
Peak Blocking Current (Either Direction) Rated VORM, Gate Open
TJ = 25°C
TJ = +125°C

IORM

Peak On-State Voltage (Either Direction)
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle"" 2%

VTM

Gate Trigger Current (Continuous dc)
Main Terminal Voltage = 12 Vdc, RL
Minimum Gate Pulse Width = 2 p,s
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)

IGT

=

Typ

Min

-

-

-

1.3

Max

Unit

10
2

pA
mA

1.75

Volts
mA

100 Ohms-

-

Gate Trigger Voltage (Continuous de)
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 p,s
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
Main Terminal Voltage = Rated VORM, RL = 10 leO, TJ
All Trigger Modes

12
12
20
35

50
50
50
80
Volts

VGT

=

-

0.9
0.9
1.1
1.4

2
2
2
2.5

+ 125°C
0.2

-

-

Holding Current (Either Direction)
Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA, TC = +25°C

IH

-

6

50

mA

Turn-On Time
Rated VORM, ITM = 17 A, IGT = 120 mA.
Rise Time = 0.1 p,s, Pulse Width = 2 p,s

tgt

-

1.5

-

p,s

dv/dt(c)

-

5

-

V/p,s

dv/dt

-

100

-

V/p,s

Critical Rate of Rise of Commutation Voltage
Rated VORM, ITM = 17 A, Commutating di/dt
Gate Unenergized, TC = +85°C

= 4.3 Alms,

Critical Rate of Rise of Off-State Voltage
(VO = VOROM, Exponential Voltage Rise, Gate Open, TC

-- .......

.......

-

~

~
z

0

"" " 'r-...r-...

4.0

6.0

= 30"

t.....

-

w

~

~ 60"
90° ~ 180° -

10

12

I
-jo

CONOUCTION ANGLE

12

w

~

.....

I-'

--

,r·

o
o

~a=18O"
90"
::,...- 60° r-/V
....-:: V /1/" . / 30°

V

h
~
-:::;;- . /
~
~ ~~

ffi 8.0

;;;:

14

/dc- f--

0

o

8.0

I

t"""
-~
.J
-.=

-

~ dc- -

.= CONOUCTION ANGLE

I

f-- ~ 20 f-~
r-- tJ)
15 16 f-a:

......... ~ ~ ~

~~
.J.
2.0

28

~ 24 r--

~

!-

~

+ 85°C)

TYPICAL CHARACTERISTICS

~ ........ ~ ~
a
:---.. ...... ~

-

=

2.0

4.0

6.0

8.0

10

iT(RMS), RMS ON-5TATE CURRENT (AMP)

IT(RMS), RMS ON-5TATE CURRENT (AMP)

Figure 1. Current Derating

Figure 2. Power Dissipation

MOTOROLA THYRISTOR DEVICE DATA
3-166

12

14

MAC212AFP Series
100

---r\

100

0

,V

0

<>:

/v
;;-

:::;;

!$.

80

I-

ifi

a::
a::

:::;)

60

~CYC~

'-'
w

""ena::
:::;)

r--L

40

r\'

- - -rr---

i--.

I

«
""
~

TJ = 25"C
1'"' . I
V TJ = 125"C

700C
:IE 20 _;C=
f = 60 Hz
~
- SURGE lSI PRECEDfD AN~ FOL~OWfD BIY RA1D CUrRE~T- -

o

1

10

1

NUMBER OF CYCLES

Figure 4. Maximum Nonrepetitive Surge Current
0.2
0.1
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4
Vj'. INSTANTANEOUS ON-STATE VOLTAGE IVOLTS)

2

Figure 3. Maximum On-State Characteristics

6

r-

2

-40

OFF-STATE VOLTAGE = 12 Vdc_
ALL MODES

-

......... r-..

l""- I"'-

-20
0
20
40
TC. CASE TEMPERATURE I"C)

60

80

Figure 5. Typical Gate Trigger Voltage

o

2

~

:;; 1. 6
a::
a
~
I-

ffi
a::

OFF-STATE VOLTAGE = 12 Vdc_
ALL MODES

....... .........
.................

1.2

a

""~

o

I-....
["'....

'-'

""~

........

" r..... ........

0.8

a

0.4

-60

.......

~ 1.2

I'-- I-....

""52
1=

i'""-

as

I'--

ffi o. 8

2.4

~
~ 1.6

..........

a::

!;i

i

2.8

~ 0.4

-40

o

-20
0
20
40
TC. CASE TEMPERATURE IOC)

60

80

-60

-40

-~

0

~

40

TC. CASE TEMPERATURE I"C)

Figure 6. Typical Gate Trigger Current

Figure 7. Typical Holding Current

MOTOROLA THYRISTOR DEVICE DATA
3-167

60

80

MAC212AFP Series
1
~.

z

~

--

0.&

~

~s 0.2
i~

~i

I-  1.4

r-......

ffi

'"

'"

.'"

"-

I

I

-20

0.8

~
~ 06

a:

,..:.

'"
S
~

::;;

EO. 5
-60 -40

10

~

o 20 40 60 80 100
TJ. JUNCTION TEMPERATURE (DC I

120

FIGURE 5 -

>

-........ J

QUANDRANTS

~ 0.4

140

tiUADR~NT 4

..........

~~
1~

'"z

-........

..........

~

I-

~ 1.0 QUADRANT
~O 7

...........

1.2

I-

-60

I

I

I

I

-40

-20

12 ---::

i'-.. "-.... ~

IZ

~

a:

B
~

9

~

1.0

.......

o. 7

.. o.

/

GATE OPEN
MAIN TERMINAL #1
POSITIVE

"-

........

f""-....

MAIN TERMINAL #2

!:J

'"z

........

o. 5

~

~

1/

~OSITIV~
3

......

'"

-..........

~O. 2
-60

-40

-20

20
40
60
80
100
TJ. JUNCTION TEMPERATURE (DC)

120

140

MOTOROLA THYRISTOR DEVICE DATA
3-171

""-

-.......;;; ~
/ ' "'"

"-

-.. r.:::::::

20
40
60
80
100
TJ. JUNCTION TEMPERATURE (DC(

NORMALIZED HOLDING CURRENT

r--...

.§.

::-::::::

/

3/

2.0

<"

VOLT~GE = 12 V

I

'"~

~
'-...
"'><
I~?
i /' X -:; ><~ t"--....
...........

OFIF-STAiE

>
;:;;- 1.6

..........
.......

NORMALIZED GATE TRIGGER VOLTAGE

~ 1.8

120

140

MAC218AFP
Series

Triacs
Silicon Bidirectional Thyristors
· .• designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
•
•
•
•

ISOLATED TRIACs
THYRISTORS
8 AMPERES RMS
200-800 VOLTS

Blocking Voltage to 800 Volts
Glass Passivated Junctions for Greater Parameter Uniformity and Stability
Isolated TO-220 Type Package for Ease of Mounting
Gate Triggering Guaranteed in Four Modes

MT2~MT1

STYLE 3

MAXIMUM RATINGS
Symbol

Rating

•

Repetitive Peak Off-State Voltage, Note 1 (TJ
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC218A4FP
MAC218A6FP
MAC218A6FP
MAC218Al0FP
On-State RMS Current (TC

=

=

-40 to + 125·C)

=

Peak Gate Power (TC

+80·C) Full Cycle Sine Wave 50 to 60 Hz, Note 2

-40 to + 100·C, t

=

Average Gate Power (TC

=

1 to 8.3 ms)

+80·C, Pulse Width

=

+80·C, t

Peak Gate Current (Pulse Width
RMS Isolation Voltage (TA

=

Unit
Volts

200
400
600
800

Peak Nonrepetitive Surge Current 10ne Full Cycle, 60 Hz)
preceded and followed by rated current
Circuit Fusing (TJ

Value

VORM

= 21'8)

= 8.3 ms)

1 J.Ls)

= 25·C, Relative Humidity '" 20%)

Operating Junction Temperature
Storage Temperature Range

IT(RMS)

8

Amps

ITSM

100

Amps

12t

35

A 2s

PGM

16

Watts

PG(AV)

0.35

Watt

IGM

4

Amps

V(lSO)

1500

Volts

TJ

-40 to +125

·C

Tstg

-40 to +150

·C

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R8JC

2.2

·CIW

Thermal Resistance, Case to Sink

ROCS

2.2 (typ)

.C/W

Thermal Resistance, Junction to Ambient

ROJA

60

.C/W

Characteristic

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperature reference pOint for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

nm7

II" I

111

77

MOTOROLA THYRISTOR DEVICE DATA
3-172

MAC218AFP Series
ELECTRICAL CHARACTERISTICS (TC

=

+ 25°C unless otherwise noted)

Characteristic
Peak Off-State Current (Either Oirection)
(Rated VOROM @ TJ = 125°C, Gate Open)
Peak On-State Voltage (Either Oirection)
(lTM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Outy Cycle < 2%)
Gate Trigger Current (Continuous dc) (VO
Trigger Mode
MT2( +), G( +)
MT2( +), G( -)
MT2(-), G(-)
MT2( -), G( +)

=

12 Vdc, Rl

=

12.0.)

Critical Rate of Rise of Off-State Voltage
(VO = VOROM, Exponential Voltage Rise, Gate Open, TJ

w

:""-..

ffi 115

a..
::;;
~

III 105

5

~
m

~
~

95

~

~

~

IOROM

mA

VTM

-

1.7

2

Volts
mA

=

-

50
50
50
80

-

Volts

-

-

0.9
0.9
1.1
1.4

2
2
2
2.5

0.2

-

-

IH

-

-

50

mA

dv/dt(c)

-

5

-

V/p.s

dv/dt

-

100

-

V/p.s

125°C)

"

/"

./

/"

V

'-...
........

........

85
75

0

Unit

2

./

~

::;;

~
~

Max

-

VGT

Critical Rate of Rise of Com mutating Off-State Voltage
(Rated VOROM, IT(RMS) = 6 A. Com mutating di/dt = 4.3 Alms,
Gate Unenergized, TC = 80°C)

a:
:::>

Typ

-

-

Holding Current (Either Oirection)
(VO = 24 Vdc, Gate Open, Initiating Current = 200 mAl

!;;:

Min

IGT

Gate Trigger Voltage (Continuous dc)
Main Terminal Voltage = 12 Vdc, Rl = 100 Ohms
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
Main Terminal Voltage = Rated VORM, Rl = 10 k.o., TJ = +125°C
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-); MT2(-), G(+)

~ 125

Symbol

2
3
4
5
6
IT(RMS). RMS ON·STATE CURRENT (AMPS)

""

/

Figure 1. Current Derating

V

./'

V

2
3
4
5
6
IT(RMS). RMS ON·STATE CURRENT (AMPS)

Figure 2. Power Dissipation

MOTOROLA THYRISTOR DEVICE DATA
3-173

k':

MAC218AFP Series
TYPICAL CHARACTERISTICS

1

5

I-

r-.....

Z

~
cc
'-'
cc
w

::::>
Cl
Cl

~
w
!;;:

Cl

o

3
2

i?i 1.8

..........

r-..... ~ r--...

,r
""'-

.........

~ QUAD~NT i~
~ O. 5
-

.........

I

-60 -40

4
-20

~

!:;
~ 1.4

r--...

/

1/

ffi

g

>-......
/'

r>< ~ r>< F:::
~

.........

/'

......

"

...........
............

1.2

~
w
!;;:

1

~

1

'"i§

0.7

'"

is
::J:

lW

~

O.

8

OU~DRAyS i

,

~
cc
~

f---

. /V

GATE OPEN

i'<

/MAIN TERMINAL #1
POSITIVE
.........

.........

............

r>....

f-- MAIN TERMINAL # 2 /
,POSITlrE

I'-....

I'-....

r-.....

......

..........

,

O.3

O. 2

-60

.......

-40 -20

~ E=:::::,.

""

120

Figure 4. Normalized Gate Trigger Voltage

fil 0.5

N

~

..........

K

a:

r--

~
/"
{
~ 0.6 f a
z
I
,.::. 0.4
.f; -60 -40 -20 0
20
40
60
60
100
TJ. JUNCTION TEMPERATURE (OCI

2

a

.........

~

~

Figure 3. Normalized Gate Trigger Current

IZ

r-;;::::::

.......... ./

.........

W
40
60
60
100
TJ. JUNCTION TEMPERATURE (OCI

1

/OUADRANT4

..........
~

Cl

o

12 v-

w

............

r---...: r--...

l§ O.7

:z

OFF·STATE VOLTAGE = 12 V

~

~"""t-..

OFF~STATEIVOLTAhE =

g 1.6

0
20
40
60
80
100
TJ. JUNCTION TEMPERATURE (OCI

120

140

Figure 5. Normalized Holding Current

MOTOROLA THYRISTOR DEVICE DATA
3-174

140

MAC223A
Series

Triaes
Silicon Bidirectional Triode Thyristors
· .. designed primarily for full-wave ac control applications such as lighting
sysjtems, heater controls, motor controls and power supplies; or wherever fullwave silicon-gate-controlled devices are needed.
• Off-State Voltages to 800 Volts
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
• Gate Triggering Guaranteed in Four Modes

TRIAC.
25 AMPERES RMS
100 thru 800 VOLTS

o

MT2

•

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Off-State Voltage
(TJ = -40 to 125'C), Note 1
(1/2 Sine Wave 50 to 60 Hz, Gate Open)

Value

Unit
Volts

VDRM

200
400
600
800

MAC223A4
6
S
10
On-State RMS Current (TC = SO·C)
(Full Cycle Sine Wave 50 to 60 Hz)

IT(RMS)

25

Amps

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125'C)

ITSM

250

Amps

12t

260

A 2s

IGM

2

Amps

VGM

±10

Volts

PGM

20

Watts

Circuit Fusing
(TJ = -40 to 125'C; t = S.3 ms)
Peak Gate Current (t "" 2 p.s)
Peak Gate Voltage (t "" 2 p.s)
Peak Gate Power (t "" 2 p.s)

Note 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for bloclcing
voltage such that the voltage applied exceeds the rated blocking voltage.

MOTOROLA THY~ISTOR DEVICE DATA
3-175

(cont.)

MAC223A Series
MAXIMUM RATINGS - continued
Rating
Average Gate Power (TC = 8O"C, t ... S.3 ms)

Symbol

Value

Unit

PG(AV)

0.5

Watts
°c

TJ

-40 to 125

Tstg

-40 to 150

°c

-

S

in. lb.

Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R8JC

1.2

0c/w

Thermal Resistance, Junction to Ambient

R8JA

60

OCIW

Characteristic

-

ELECTRICAL CHARACTERISTICS (TC

= 25°C and either polarity of MT2 to MTl voltage unless otherwise noted.)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current (Note 1)
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C

•

Min

Typ

Max

Unit

-

-

10
2

p.A
mA

-

1.4

1.S5

Volts

IORM,IRRM

Peak On-State Voltage
(lTM = 35 A Peak, Pulse Width ... 2 ms, Outy Cycle'" 2%)

VTM

Gate Trigger Current (Continuous de)
(VO = 12 V, Rl = 1000)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+)

IGT

Gate Trigger Voltage (Continuous de)
(VO = 12 V, Rl = 1000)
MT2(+), G(+); MT2(-), G(-); MT(+), G(-)
MT2(-), G(+)
(VO = Rated VORM, TJ = 125°C, Rl = 10 k) All Trigger Modes

VGT

mA

-

20
30

50
SO
Volts

0.2

1.1
1.3
0.4

Holding Current
(VO = 12 V, ITM = 200 mA, Gate Open)

IH

-

10

50

mA

Gate Controlled Turn-On Time
(VO = Rated VORM, ITM = 35 A Peak, IG = 200 mAl

tgt

-

1.5

-

IJ.S

dv/dt

-

40

-

V/ILS

dv/dt(c)

-

5

-

V/IJ.S

Critical Rate of Rise of Off-State Voltage
(Vo = Rated VORM, Exponential Waveform, TC

=

2
2.5

-

125°C)

Critical Rate of Rise of Commutati9n Voltage
(VO = Rated VORM, ITM = 35 A Peak, Com mutating
di/dt = 13.4 Alms, Gate Unenergized, TC = SO°C)

Note 1. Ratings apply for open gete conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.

FIGURE 2 - ON-STATE POWER DISSIPATION

FIGURE 1 - RMS CURRENT DERATING
l3

~ 125 .........

40

/

a:

:::>

0-

ffi
"-

...... 1'--..

11 5

r-....

:IE

~ 105

L
~

...~
~

~

..
..x

g

.....

,/

..........

'""

5
5

.........

/'

I"

:IE

~

/~

.........

.:;

V

V

75

,/"/

:IE
0-

V

5.0

10

15

20

0

25

5.0

10

15

20

IT(RMS). RMS ON·STATE CURRENT (AMPS)

iT(RMS)' RMS ON·STATE CURRENT (AMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-176

25

MAC223A Series
FIGURE 4 - GATE TRIGGER-VOLTAGE

FIGURE 3 - GATE TRIGGER CURRENT

>~

a: 3.0
a:

~

--

2. 0

w

~

0
'"
c 1.
w

3.0

2. 0

Vo = 12 V
RL = 100f!

r-.

r-- I--

1. 0

Vo =12 V
RL =100 f!

N

~ O. 5

a:

c

z

o. 5

-...

:I!

O. 3

O. 3

o. 2
O. 1

-60

O. 2
-40

-20

20

40

60

80

100

120

O. 1
-60

140

Tj. JUNCTION TEMPERATURE (DC)

-40

-20

20
40
60
80
TJ, JUNCTION TEMPERATURE (DC)

100

120

140

FIGURE 8 - ON-STATE CHARACTERISTICS

FIGURE 6 - HOLD CURRENT

ie
:I!

~

!;;;

>~

a:
a:
~

w

2.0

:l

c

:J:

1.0

~

N

--

""'"-

:;: 50
~

ITM = 200mA
Gate Open

~

~ 0.5

c

5.0

w

z

:I!

~ 1.0

~ O. 3
z

200

~ 100
:::>

z

~ 0.5

o. 2

~

O. 1

-60

:E

-40

-20

20
40
60
80
TJ, JUNCTION TEMPERATURE (DC)

100

120

•••

140

.!::-

0.1
0

4.0
2.0
3.0
1.0
VTM,INSTANTANEOUS ON-8TATE VOLTAGE (VOLTS)

•

._.I11[.:.:.!!!!.m.I~
IM1IiifWIIIIl'.IiI.f1.
Ilalllll. . .I!!III• • • • •
IIIII• •••
MOTOROLA THYRISTOR DEVICE DATA
3-177

MAC223AFP
Series

Triaes
Silicon Bidirectional Triode Thyristors
· .. designed primarily for full-wave ac control applications. such as lighting systems.
heater controls. motor controls and power supplies; or wherever full-wave silicon-gatecontrolled devices are needed.
• Off-State Voltages to SOO Volts
• All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability
• Small. Rugged Thermowatt Construction for Thermal Resistance and High Heat
Dissipation
• Gate Triggering Guaranteed in Four Modes

ISOLATED TRIACs
THYRISTORS
25 AMPERES RMS
100-800 VOLTS

~

MT2~MTl

STYLE 3

MAXIMUM RATINGS
Symbol

Rating

•

Repetitive Peak Off-State Voltage. Note 1 (TJ = -40 to + 125°CI
1/2 Sine Wave 50 to 60 Hz. Gate Open
MAC223A4FP
MAC223A6FP
MAC223A8FP
MAC223A10FP
On-State RMS Current (TC = +80°CI Full Cycle Sine Wave 50 to 60 Hz. Note 2
Peak Nonrepetitive Surge Current (One Full Cycle. 60 Hz. TJ = + 125°CI
preceded and followed by rated current
Circuit Fusing (TJ = -40 to 125°C; t = 8.3 msl
Peak Gate Power (t .. 2 I'sl
Average Gate Power (TC = + 80°C. t .. 8.3 msl

Valua

Unit
Volts

VORM
200
400
600
800
IT(RMSI

25

Amps

ITSM

250

Amps

12t

260

A 2s

PGM

20

Watts

PG(AVI

0.5

Watt

Peak Gate Current (t .. 2 !'81

IGM

2

Amps

Peak Gate Voltage (t .. 2 I'sl

VGM

±10

Volts

V(lSOI

1500

Volts

TJ

-40 to +125

OC

Tstg

-40 to +150

°c

-

8

inllb

RMS Isolation Voltage (TA = 25°C. Relative Humidity .. 20%1
Operating Junction Temperature
Storage Temperature Range
Mounting Torque

Notes: 1. Ratings apply for open gete conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such thet the
voltage applied exoseds the reted blocking voltage.
2. The esse temperature referenos point for all TC measurements is a point on the osnter lead of the package as close as possible to the plastic body.

MOTOROLA THYRISTOR DEVICE DATA
3-178

MAC223AFP Series
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless·otherwise noted)
Symbol

Characteristic
Peak Blocking Current, Note 1
TJ = 25°C
(VO = Rated VORM, TJ = 125°C

IORM

Peak On-State Voltage
(lTM = 35 A Peak; Pulse Width"" 2 ms, Duty Cycle"" 2%

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 1000.)
MT2(+), G(+); MT2(-), G(-), MT2(+). G(-)
MT2(-), G(+)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 V, RL = 1000.)
MT2(+), G(+); MT2(-), G(-), MT2(+), G(-)
MT2(-), G(+)
(VO = Rated VORM, TJ = 125°C, RL = 10 k) All Trigger Modes

VGT

Min

Typ

Max

Unit

-

-

10
2

mA

1.S5

Volts

1.4

,..A

mA

-

20
30

-

50
SO
Volts

-

0.2

1.1
1.3
0.4

Holding Current
(VO = 12 V, ITM = 200 mA, Gate Open)

IH

-

10

50

mA

Gate Controlled Turn-On Time
(VO = Rated VORM, ITM = 35 A Peak, IG = 200 mAl

tgt

-

1.5

-

p.s

dv/dt

-

40

-

V/p.s

dv/dt(c)

-

5

-

V/p.s

-

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage
(Vo = Rated VORM, ITM = 35 A Peak, Commutating di/dt = 13.4 Alms,
Gate Unenergized, TC = SO°C)

2
2.5

-

NOTE 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.

e 125 .........

S

w

a:
:::>

!;( 115

......

It

~

105

w

5~

~
9 85

::;;

z
a

~

::;;

/

~

........

a:

40

........

..............

10

V
./

~
5
10
15
20
ITIRMS), RMS ON-STATE CURRENT lAMPS)

Figure 2. On-State Power Dissipation

MOTOROLA THYRISTOR DEVICE DATA
3-179

25

MAC223AFP Series
TYPICAL CHARACTERISTICS

!Z

3

ll'!
ex: 2

B
w
!;;:

'"~

1

-

w

~

!:;

...........

w

!;;:

'"~

- --

~ o.5
!§ 0.3
z O. 2

O. 1.
-60

g

Vo = 12 V
RL = 100 n

-40 -20

0
20
40
60
80
TJ. JUNCTION TEMPERATURE lOCI

100

120

Vo = 12V
RL=l00n

I-- r--

1


z

0

....
z
....
'"
~
<[

0.3

<[

0.2

O. 1
-60

::i;

-40

20

-20

40

60

100

80

120

140

r

1. 0

1.0

TJ.JUNCTION TEMPERATURE IOC)

3.0

2.0

VrM. INSTANTANEOUS ON·STATE VOLTAGE IVOLTS)

FIGURE 7 - THERMAL RESPONSE

w

U

Z

~

'"
13
a:

1.0
0.7
0.5
~

0.3

j...ol--'

0.2

-

..... 1""

~O
«
w
ffi ~ O. 1

ZtlJClt) = ROJC . rll)

I-"'"

::E!>!

~ ~ 0.0 7
f.5 ~ 0.0 5

0- 0

in

~
t-

-

0.03
0.02

.J'

0.0 1
0.1

0.2 0.3

0.5

1.0

2.0

3.0

5.0

10

20 30
50
I. TIME Ims)

100

200 300

MOTOROLA THYRISTOR DEVICE DATA

3-183

500

lk

2k

3k

5k

10k

MAC228A
Series

Triacs
Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and
other power switching applications.
• Four Mode Triggering for Drive Circuits that Source Current
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading

TRIACs
8 AMPERES RMS
200 thru 800 VOLTS

O---I~IO:!I--G---

«

;;
~ 2.01--+---7I~.-.;;.~~rl'''--___1--+--+-_I
0"

CONOUCTION ANGLE

800L--L--~-~~-4~.0~~5~0-~~-~-~

O~~l-__~__- L__~__~~~~~~~

o

1.0

60

ITlRMS), RMS ON·STATE CURRENT (AMP)

ITlRMS), RMS ON STATE CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-185

7.0

8.0

MAC229A
Series

Triaes
Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and
other power switching applications.
• Four Mode Triggering for Drive Circuits that Source Current
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal resistance and High
Heat Dissipation
• Center Gate Geometry for Uniform Current Spreading

TRIACs
8 AMPERES RMS
200 thru 800 VOLTS

o
MT2

CASE 221A·04
(TO-220AB)
STYLE 4

I

MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Off-State Voltage, Note 1
(TJ = -40 to 110'C)
1/2 Sine ave 50 to 60 Hz, Gate Open
MAC229A4
A6
AS
Al0

Unit
Volts

VORM

200
400
600

SOO

On-State RMS Current (TC = SO'C)
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-Repetitive Surge Current
(One Full Cycle 60 Hz, TJ = 110'C)
Circuit Fusing
(TJ = -40 to 110'C, t

Value

IT(RMS)

S

Amps

ITSM

SO

Amps

12t

40

A 2s
Amps

= S.3 ms)

Peak Gate Current (t '" 2 p.s)

IGM

±2

Peak Gate Voltage (t '" 2 p.s)

VGM

±10

Volts

PGM

20

Watts

Peak Gate Power (t '" 2 p.s)

Note 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such
that the voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-186

(cont.1

MAC229A Series
MAXIMUM RATINGS -

continued
Rating

Symbol

Value

Unit

PG(AV)

0.5

Watts

TJ

-40 to 110

°c

Tstg

-40 to 150

°c

S

in. lb.

Average Gate Power
(TC = SO°C, t .. S.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

Characteristic

R8JC

2.2

°CIW

Thermal Resistance, Junction to Ambient

R8JA

60

°CIW

ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current, Note 1
(Rated VORM or VRRM) TJ = 25°C
TJ = 110°C

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 V, Rl = 1000)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2( -), G( +)

IGT

Gate Trigger Voltage (Continuous de)
(VO = 12 V, Rl = 100 0)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2( -), G( +)
(VO = Rated VORM, TC = 110°C, Rl = 10 k)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-);
MT2( -), G( +)

VGT

=

Typ

Max

Unit

IORM,IRRM

Peak On-State Voltage
(lTM = 11 A Peak, Pulse Width .. 2 ms, Duty Cycle .. 2%)

Holding Current
(VO = 12 Vdc, ITM

Min

-

-

10
2

/LA
mA

-

-

1.5

Volts
mA

-

-

10
20
Volts

-

-

2
2.5

0.2
0.2

-

-

IH

-

-

15

mA

tgt

-

1.5

-

/Ls

dvldt

-

25

-

V//Ls

dv/dt(c)

-

5

-

V//Ls

All types
MAC229 series

200 mA, Gate Open)

Gate-Controlled Turn-On Time
(Vo = Rated VORM, ITM = 16 A Peak, IG

=

30 mAl

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM, Exponential Waveform, TC

=

110°C)

Critical Rate of Rise of Commutation Voltage
(Vo = Rated VORM, ITM = 11 A Peak,
Commutating dildt = 5.S Alms, Gate Unenergized, TC

=

SO°C)

Note 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
110 ....=,-,---,--,-----,--,

10
0;

....

....
« 80

~t04
~
=>
~

~

~--+--t_~~~~~~~-.~+_

'"~

98r---+--+---+~~~~~~~T+--

~

w
"-

o~

CONOUCTION ANGLE

w

'"

g 4.0

i'll

~ 92

TJ"'110oC

>

«

;3
U
....

~
-Jo

60

:>
«

86
o~

0::

CONOUCTION ANGLE

ITIRMS)' RMS ON-STATE CURRENT (AMP)

IT(RMS). RMS ON·STATE CURRENT (AMP)

~~~
MOTOROLA THYRISTOR DEVICE DATA
3-187

MAC310A
Series

Triaes
Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and consumer applications for full wave control of
ac loads such as appliance controls, heater controls, motor controls, and other power
switching applications.
• Sensitive Gate Triggering in Three Trigger Modes for AC Triggering or Sinking Current
Sources (MAC310 series)
• Four Mode Triggering (10 mAl for Drive Circuits that Source Current (MAC310A series)
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation
• Center Gate Geometry for Uniform Current Spreading

II

TRIACs
10 AMPERES RMS
200 thru 600 VOLTS

CASE 221A-04
(TO-220ABI
STYLE 4

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Off-State Voltage
(TJ = -40 to 110°CI Note 1.
1/2 Sine Wave to 50 to 60 Hz, Gate Open

Peak Non-Repetitive Surge Current
(One Full Cycle 60 Hz, TJ = 110°CI

Unit
Volts

VDRM
MAC310A4
MAC310A6
MAC310A8

On-State RMS Current (TC = 80°CI
Full Cycle Sine Wave 50 to 60 Hz

Circuit Fusing (TJ

Value

200
400
600
IT(RMSI

10

Amps

ITSM

100

Amps

12t

40

A 2s
Amps

= -40 to 110°C, t = 8.3 msl

Peak Gate Current (t .. 2 /LsI

IGM

±2

Peak Gate Voltage (t .. 2 /LsI

VGM

±10

Volts

Peak Gate Power (t .. 2 /LsI

PGM

20

Watts

PG(AVI

0.5

Watts

TJ

-40 to 110

°c

Tstg

-40 to 150

°c

-

8

in-Ib

Average Gate Power (TC

= 80°C, t .. 8.3 msl

Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R8JC

2.2

°CIW

Thermal Resistance, Junction to Ambient

ROJA

60

°CIW

Characteristic

~:YI'ltiiNl'l1l1Wh.2A~L"H~.L>li.~«:~rT~~?f'~nz;.n,$,jid.~ J!"""It4Ri~U·~A\'~;f~~:.

~;o;u;;;~!fflIll'lY'fW;~q\~_i>@f~~

~f':'FlII'TU'.~:~'1I·~::",::w-r7:7'TI7l!~!!~IJ.Tm;¥ ,~,;tr":D:t'T.:m~

MOTOROLA THYRISTOR DEVICE DATA
3-188

MAC310A Series
ELECTRICAL CHARACTERISTICS (TC

=

25'C and either polarity of MT2 to MTl voltage unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current (Note 1)
(VO = Rated VORM, TJ = 110'C)

IORM

-

-

2

mA

Peak On-State Voltage
(lTM = 14 A Peak, Pulse Width .. 2 ms, Outy Cycle .. 2%)

VTM

-

-

1.7

Volts

Gate Trigger Current (Continuous dc)
(VO = 12 V, Rl = 1000)
MT2(+), G(+); MT2(+), G(-);
MT2(-), G(-); MT2(-), G(+)

IGT

-

-

10

mA

Gate Trigger Voltage (Continuous dc)
(VO = 12 V, Rl = 1000)
MT2(+), G(+); MT2(+), G(-);
MT2(-), G(-); MT2(-), G(+)
(Vo = Rated VORM, TC = 110'C, Rl
All Trigger Modes

VGT

Holding Current
(VO = 12 V, ITM

Volts

-

-

2.5

0.2

-

-

IH

-

-

15

mA

tgt

-

1.5

-

p.s

dv/dt

-

25

-

V/p.s

dv/dt(c)

-

5

-

V/p.s

= 10 k)

= 200 mA, Gate Open)

Gate-Controlled Turn-On Time
(VO = Rated VORM, ITM = 14 A Peak, IG

= 30 mAl

Critical Rate of Rise of Off-State Voltage
(Vo = Rated VORM, Exponential Waveform, TC

= 110'C)

Critical Rate of Rise of Commutation Voltage
(VO = Rated VORM, ITM = 14 A Peak,
Commutating di/dt = 14 Aims, Gate Unenergized,
TC = SO'C)

Note 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.

20

g

~ 120
w

!;( 110
a:
~

:;

~

16
de

~

a:
:::>

-

a:

:-:::r----.. --::::::

r-...:::::: ~ :::::-- ......
.......... ..........--...
~ 3::::::
......

100

5
,990

.................

80

o

~

.....-:: /......-: I/::
::::::::::
~ 10' ....
/' ~

w

l'--...

«
'"a:
30'

50'
r-:::::-- 90"

............. 180'

~
2
4
6
8
IT(RMS), RMS ON-STAlI CURRENT (AMPS)

/.1 80"
20'
/ V/ 190'

12

w

~

~ ~ ~ ;:...:::V

:>

a!-

de

10

~

o
o

.......-....,,:: ~ :;.--=:: ~

2
4
6
8
IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 2. On-State Power Dissipation

Figure 1. RMS Current Derating

MOTOROLA THYRISTOR DEVICE DATA
3-189

10

60"

30'

MAC320A
Series

Triacs
Silicon Bidirectional Thyristors
• •• designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave
silicon gate controlled solid-state devices are needed. Triac type thyristors switch
from a blocking to a conducting state for either polarity of applied anode voltage
with positive or negative gate triggering.
.

TRIAC.
20 AMPERES RMS
200 thru 800 VOLTS

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance. High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

MT1

o

CASE 221A-04
(TO-220AB)

STYLE 4

•

MAXIMUM RATINGS
Symbol

Rating
Repetitive Peak Off-State Voltage (TJ = - 40 to + 125·C)
1/2 Sine Wave 50 to 60 Hz. Gate Open

Value

VORM
200
400
600
BOO

MAC320A4
MAC320A6
MAC320AB
MAC320A10
Peak Gate Voltage
On-State Current RMS (TC = + 75·C)
(Full Cycle, Sine Wave. 50 to 60 Hz)
Peak Surge Current (One Full Cycle. 60 Hz. TC = + 75·C)
preceded and followed by rated current
Peak Gate Power (TC = + 75·C, Pulse Width = 2 p.s)
Average Gate Power (TC = + 75·C. t = B.3 ms)
Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range

VGM

10

Volts

IT(RMS)

20

Amp

ITSM

150

Amp
Watts

PGM

20

PG(AV)

0.5

Watt

IGM

2

Amp

TJ

-40 to +125

·C

Tstg

-40 to +150

·C

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case

MOTOROLA THYRISTOR DEVICE DATA
3-190

Unit
Volts

MAC320A Series
ELECTRICAL CHARACTERISTICS (TC = + 25°C unless otherwise noted)
Characteristic

Symbol

Peak Blocking Current (Either Direction) Rated VDRM, Gate Open
TJ = 25°C
TJ = + 125°C

IDRM

Peak On-State Voltage (Either Direction)
ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle'" 2%

VTM

Gate Trigger Current (Continuous de)
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
MT2 (+), G(+); MT2 (+), G(-); MT2 (-), G(-)
MT2 (-), G(+)

IGT

Gate Trigger Voltage (Continuous de)
Main Terminal Voltage = 12 Vdc, RL =
MT2 (+), G(+); MT2 (+), G(-); MT2
MT2 (-), G(+)
Main Terminal Voltage = Rated VDRM,
MT2 (+), G(+); MT2 (-), G(-); MT2
MT2 (-), G(+)

VGT

Min

Typ

Max

Unit

-

-

-

10
2

mA

1.4

1.7

Volts

pA.

mA

-

-

50
80
Volts

100 Ohms
(-), G(-)
RL = 10 k 0, TJ = + 110°C
(+), G(-);

-

0.9
1.4

2
2.5

0.2

-

-

Holding Current (Either Direction)
Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA

IH

-

6

40

mA

Turn-On Time
Rated VDRM, ITM = 28 A,
IGT = 120 mA, Rise Time = 0.1 p.s, Pulse Width = 2 p's

tgt

-

1.5

-

p.s

dv/dt(C)

-

5

-

V/p.s

Critical Rate of Rise of Commutation Voltage
Rated VDRM, ITM = 28 A. Commutating
di/dt = 8 Aims, Gate Unenergized, TC = + 75°C

FIGURE 1 -

FIGURE 2 -

RMS CURRENT DERATING

e1~~~r-~---r--'---.---.--.---.--.---.

40

~ 120 1=~• •!;10"" ..~+----f---+---+----+---+----1
~

~

110 1-----1f--+---+~~"""""""'?-""-="7t­

I!!

~
a:
w

<3

2

~100f---+---+----+---+-~~~~~~CP~~~

~

CD

OOr-~---+---+---,---t-~~~~~~~~

~80
~
~
:::;;

g

:i

70
60

JAy'
.J

-JQ~

Q

a = Conduction

35

~

25
20

'"w
«
a:

:i(

~"'"1.:.t:

.J a ~---+---f--+---+-

30

w

•

ON·STATE POWER DISSIPATION

a = Conduction
Angle

15

~ 10
5
5.0

--+---+--t---jf---

n.

--+----f---+----f---+---I

Angle

00

~ 600~~2.0~~4~.0~~6~~--~8.0~~1~0--~12~~14--~1~6--~~20
ITIRMS), RMS ON·STATE CURRENT lAMP)

2.0

4.0

6.0
8.0
10
12
14
16
ITIRMS), RMS ON,STATE CURRENT lAMP)

20

. . . .~~~~~
. .~~
• •·. rl.v.III.Ell.I.III.11.117.'
.
. . .111.77.'
.
. . . . . . . . . .777
MOTOROLA THYRISTOR DEVICE DATA
3-191

MAC320A Series
FIGURE 3 - TYPICAL GATE TRIGGER VOLTAGE

o

OJF.STA-tE VOLtAGE =112 Vdc
ALL MOOES

~

~

FIGURE 5 - MAXIMUM ON·STATE CHARACTERISTICS
100

2

--

o'"

~

w

'"i3
g
w
'"

70

;"

/

50

r-- r-.

TJ = 25 0 C

;:

30

-..
t-..

'" 0.7

/

'"a:

I-

w

!;(

/
1250 C

~'

20

r--

/

,f

0.5

'"

~

'" 0.3

>

-60

-40

20

-20

40

60

80

100

120

140

I

If

TJ, JUNCTION TEMPERATURE (DC)

"

I
I

FIGURE 4 - TYPICAL GATE TRIGGER CURRENT
OFF-5TAT:L~O~~~~~ = 12 Vdc_

.....

0.7

............

o. 5

r--......
.....

•

'"w

I-

~

I

0.3

r-......

0.5

r--

0.2

'"
3

:

,

~

o. 1
20

40

60

80

TJ, JUNCTION TEMPERATURE(OC)

100

120

140

0.4

0.8

1.2

1.6

2.4

2.8

3.2

3.6

VTM, INSTANTANEOUS ON-5TATE VOLTAGE (VOLTS)

MOTOROLA THYRISTOR DEVICE DATA
3·192

4.4

MAC320A Series
FIGURE 6 -

"-

i5
w

..

N

:::;

~

a:

0

~

I

"'-

w
a:
a:

:::>

'"gz

O. 7

o. 5

0
:I:

FIGURE 7 -

'"

I

i....

200

--- -

~

r---

a:
a:

~

......

w

100

'"

70

~

50

'"5la:

..........

...........

..............

~

......

....

:I:

a
-40

-20

20

40

60

BO

100

120

140

10
NUMBER OF CYCLES

FIGURE 8 -

w
U

Z

to'"
~

a: -

~o

5

0.2

V-

~~

t--- l---

r-

TC = BOoC
= 60 Hz
Surge IS preceded and followed by rated current

TJ, JUNCTION TEMPERATURE IOC)

1

I--~

rf

O. 3
-60

MAXIMUM ON-REPETITIVE SURGE CURRENT

300

GATE OPEN.
APPLIES TO EITHER OIRECTION

....
z
u

TYPICAL HOLDING CURRENT

THERMAL RESPONSE

ZOJClt)

~ ~ 01

=rlt) •

ROJC

:I:'"

.... a:
.... 0

~ ~o.o 5

u;
z

;i
....
"

00 2
0.0 1
0.1

0.2

0.5

10

20

50
t,

TIME

100

200

1m,)

MOTOROLA THYRISTOR DEVICE DATA
3-193

500

1k

2k

5k

10 k

•

MAC320AFP
Series

Triacs
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon gate
controlled solid-state devices are needed. Triac type thyristors switch from a blocking to
a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Four Modes

MT2~MT1

ISOLATED TRIACs
THYRISTORS
20 AMPERES RMS
200-BOO VOLTS

~
STYLE 3

MAXIMUM RATINGS
Rating
Repetitive Peak Off-State Voltage, Note 1 (TJ
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC320A4FP
MAC320A6FP
MAC320ASFP
MAC320A 1OFP

•

Symbol

= -40 to + 125°C)

= + 75°C) Full Cycle Sine Wave 50 to 60 Hz, Note 2

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC
preceded and followed by rated current
Peak Gate Power (TC

= + 75°C)

= + 75°C, Pulse Width = 2/Ls)

Average Gate Power (TC

= + 75°C, t = S.3 ms)

Peak Gate Current
RMS Isolation Voltage (TA

= 25°C, Relative Humidity '" 20%)

Operating Junction Temperature
Storage Temperature Range

Unit
Volts

VORM
200
400
600
SOO

Peak Gate Voltage
On-State RMS Current (TC

Value

VGM

10

Volts

IT(RMS)

20

Amps

ITSM

150

Amps
Watts

PGM

20'

PG(AV)

0.5

Watt

IGM

2

Amps

V(lSO)

1500

Volts

TJ

-40 to +125

°c

Tstg

-40 to +150

°c

Symbol

Max

Unit

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

R8JC

I.S

°CIW

Thermal Resistance, Case to Sink

RIICS

2.2 (typ)

°CIW

Thermal Resistance, Junction to Ambient

R8JA

60

°CIW

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

..

Ii

JIIi!.' •• III•• '.:I'm:III...........illllllNl.'Ullt. .' .
MOTOROLA THYRISTOR DEVICE DATA
3-194

'I

MAC320AFP Series
ELECTRICAL CHARACTERISTICS (TC = +2S0C unless otherwise noted)
Symbol

Characteristic
Peak Blocking Current (Either Direction) Rated VDRM, Gate Open
TJ = 25°C
TJ = +12SoC

IDRM

Peak On-State Voltage (Either Direction)
ITM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle .. 2%

VTM

Peak Gate Trigger Current
Main Terminal Voltage = 12 Vdc, RL
Minimum Gate Pulse Width = 2 p.s
MT2( +), G( +)
MT2(+). G(-)
MT2( -), G( -)
MT2(-), G(+)

IGT

=

Min

Typ

Max

Unit

-

-

10
2

pA.
mA

1.4

1.7

Volts
mA

100 Ohms

-

-

-

Peak Gate Trigger Voltage
Main Terminal Voltage = 12 Vdc, RL = 100 Ohms
Minimum Gate Pulse Width = 2 p.s
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(-), G(+)
Main Terminal Voltage = Rated VDRM, RL = 101<0, TJ
All Trigger Modes

50
SO
50
80
Volts

VGT

=

-

0.9
0.9
1.1
1.4

2
2
2
2.S

+110°C
0.2

-

-

Holding Current (Either Direction)
Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA

IH

-

6

40

mA

Turn-On Time
Rated VDRM, ITM = 28 A, IGT = 120 rnA,
Rise Time = 0.1 p.s, Pulse Width = 2 p.s

tgt

-

1.5

-

p.s

dv/dt(c)

-

S

-

V/p.s

Critical Rate of Rise of Commutation Voltage
Rated VDRM, ITM = 28 A, Com mutating di/dt
Gate Unenergized, TC = + 75°C

= 8 Alms,

I

TYPICAL CHARACTERISTICS

~130r--''--.---.---'---r---'--'---'---'--'
tl!
~a:: 120~~~"~~~=+---t--~--~--+---+-~
~ 110~~~-1---+~~~~~~~~
I!!

40

~
~

~100~~~-1---+---t--~~~~~~~~t---i

~

'"ffi«

~ 9O~~~-1---1---+--+--+"""'..t-''''"'';;I-''''''''P-.....J

>80
~
70

:;;
~ 60

~
-J' ~
.J ,
--+---t----+----+-Il

= Conduction

---+---f---I--+---+----1

Angle

~ 600~~2.~0--~4.0~-6~.0~~8~.0--~1~0--~1~2--~14~~16~~--~
20

Il

~ 25

a:'

~

30

a::

<3

~

35

w

~

= Conduction
Angle

20
15

~ 10

i5

n.

5.0

00

2.0

4.0

6.0

8.0

10

12

14

20

16

IT(RMS!, RMS ON·STATE CURRENT lAMP!

ITIRMS!, RMS ON·STATE CURRENT (AMP!

Figure 1. RMS Current Derating

Figure 2. On-State Power Dissipation

~. . . . . . . . .lllliiillllllllllir
MOTOROLA THYRISTOR DEVICE DATA
3-195

II. . . . I

MAC320AFP Series

c

~
l5

~

r-. r-.

w

'"~
~
a:
w

g

100

OFF-STATE VOLTAGE = 12 Vdc
ALL MODES

0.7

-

70
TJ - 25°C

~
~'

30
20

............
::;;
0-

10
ii'i
a:

~

-40 -20

0
20
40
60
80
TJ. JUNCTION TEMPERATURE (OC)

100

120

140

a:
::>
'-'
0
a:

I

a:

II

~
fr

If

'"::>

Figure 3_ Typical Gate Trigger Voltage

,I

,

fil

z

~

c

z
~

'"~

OFF-STATE VOLTAGE = 12 Vdc_
ALL MODES

I!;l

~

::;;
a:

/
125°C

J

::£

~ 0.3

/

/

ii:

~
~ 0.5

-60

./

/

50

:::l;

.l=-

0

~

0.7

0Z

w
a:
a:
::>
u

............
1

ffi

'"'"~

I

0.7

i'--. .......
.......

0.5

........

0.3

..........

I'-

w

!;( 0.5

0.2

0.3
-60

:

,
I

'"~

!P

I

I

-40 -20

20
40
60
80
TJ. JUNCTION TEMPERATURE (OC)

100

120

0.1
0.4

140

0.8

1.2

1.6

2.4

2.8

3.2

3.6

4

.4.4

VTM. INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 4_ Typical Gate Trigger Current

Figure 5. Maximum On-State Characteristics

MQTOROLA THYRISTOR DEVICE DATA
3-196

MAC320AFP Series

'\.

0

~

"'-

~

:;;;
a:

0
~

I-

~

a:
a:
=>
u

!z
w
a:
a:

""-

:::l

u
w

z
,;t

........

V>

............

-60

-40 -20

20

40

60

80

~~

1-0

~ ~

u;

=

70

r-

:E 50 TC = 800C
.'!.'
f = 60Hz

100

120

30

140

1

10

Figure 6. Typical Holding Current

Figure 7. Maximum Nonrepetitive Surge Current

0.5
0.2

~

"",0

ffi;i

b:.,

NUMBER OF CYCLES

;!

z:;;;
I - a:

-

TJ, JUNCTION TEMPERATURE lOCI

V>

ffl

....

!--.--

SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT

0.3

a: _

...""LiS

.............

0.5

~

100


a:
:::l

z

90

----

<>:

:;;; 200

:!.

0.7



300

I
GATE OPEN
APPLIES TO EITHER DIRECTION

~

O. 1

---

f-

ZOJCltl = rltle ROJC

0.05

z

~

~

0.02
0.01
0.1

0.2

0.5

10

20
50
t, TIME Imsl

100

200

500

1k

2k

5k

Figure 8. Thermal Response

~~,j1.~(4 .'!"'C"'~ 'to;~;·"rrJ··,"",~.."';Lry·; ··'·,·!,.,.~r>" ,x"Jr,T.'i·'" .~ W1~.~)'..o!N,~~iiiMYjY.!'."NYm:Mi~:"'&ShJ'J.'fu;,;::r YV";r.", It::.'N.~Jlr,; 'Nd""¥f'";'''
,M/W:'llIiffBfFlh tfj1L.~~·\iWJ\.,..;lr;;1",.~. ;P".KN JI·.E4',l\,g\;;D:'IIi'N,l!I(fdl

MOTOROLA THYRISTOR DEVICE DATA
3-197

MAC625
Series
MAC635
Series

Triaes
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon gate
controlled solid-state devices are needed. Triac type thyristors switch from a blocking to
a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
•
•
•
•
•

Blocking Voltage to 600 Volts
TO-3 Isolated Mounting
High Isolation Voltage - 2.5 kV rms
High Commutating dv/dt - 6 V//LS Min
UL Recognized - File # E69369

ISOLATED TRIACs
THYRISTORS
25/35 AMPERES RMS
200-600 VOLTS

MT2~MT'

CASE 383-01

•

MAXIMUM RATINGS
Symbol

Rating
Repetitive Peak Off-State Voltage (1) (TJ = -40 to + 125°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open

Peak Gate Voltage

VGM

On-State RMS Current
(TC = + 75°C) Full Cycle Sine Wave 50 to 60 Hz (2)
(TC = 5BOC)

MAC625 Series
MAC635 Series

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = + 75°C)
preceded and fOllowed by rated current

MAC625 Series
MAC635 Series

10

Peak Gate Power (TC = +75°C, Pulse Width = 21£5)

Peak Gate Current
RMS Isolation Voltage (TA = 25°C, Relative Humidity '" 20%)
Operating Junction Temperature
Storage Temperature Range
MAC625 Series
MAC635 Series

Volts
Amps

IT(RMS)

Average Gate Power (TC = + 75°C, t = B.3 ms)

Unit
Volts

200
400
600

MAC625-41635-4
MAC625-6/635-6
MAC625-B/635-B

Circuit Fusing (TC = + 70°C, t = 1 to B.3 ms)

Value

VORM

25
35
ITSM

250
330

Amps

PGM

10

Watts

PG(AV)

1

Watt

IGM

3

Amps

V(lSO)

2500

Volts

TJ

-40 to + 125

°c

Tstg

-40 to +125

°c

12t

260
360

A 2s

(1) Ratings apply for opan gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

MOTOROLA THYRISTOR DEVICE DATA
3-198

MAC625 Series. MAC635 Series
ELECTRICAL CHARACTERISTICS (TC = +25°C unless otherwise noted)
Symbol

Characteristic
Peak Blocking Current (Either Direction) Rated VDRM, Gate Open

IDRM
IRRM

Peak On-State Voltage (Either Direction)
ITM = 1.4IT(RMS)

VTM

Peak Gate Trigger Current
Main Terminal Voltage = 6 Vdc, IT
MT2( +), G( +)
MT2( +), G( -)
MT2(-), G(-)
MT2(-), G(+)

IGT

pA

-

-

1.4

Volts
mA

-

50
50
50

Volts

VGT

= 1A

-

-

VGD

0.2

-

-

Volts

IH

-

30

-

mA

tgt

-

-

10

p.s

dv/dt(c)

6

-

-

V/p.s

dv/dt

100

-

-

V/p.s

-

-

3
3
3

-

= 10 k!1, TJ = 125°C

= Rated IT, IGT = 100 mA

Critical Rate of Rise of Commutation Voltage
VD = 2/3 Rated VDRM, Commutating di/dt
TJ = 125°C
213 VDRM, TJ

10

-

Holding Current (Either Direction)

=

Unit

-

-

Gate Non-Trigger Voltage
Main Terminal Voltage = 1/2 Rated VDRM, RL

dv/dt @ VD

Max

-

= 1A

Peak Gate Trigger Voltage
Main Terminal Voltage = 6 Vdc, IT
Minimum Gate Pulse Width = 2 p.s
MT2( +), G( +)
MT2( +), G( -)
MT2( -), G( -)
MT2( -), G( +)

Turn-On Time
VD = 1/2 Rated VDRM, ITM

Typ

Min

= 15 Alms

= 125°C

TYPICAL CHARACTERISTICS

--

i.-""

~
I-

~

Z

W

~ 102

u
w

V
~

MAC~S:=

r--

MAC625-

!;;:

t?

1/

z
o

1/

101

VI

2

3

ON·STATE VOLTAGE (V)

GATE CURRENT (rnA)

Figure 1. Gate Characteristics

Figure 2. On-State Voltage

MOTOROLA THYRISTOR DEVICE DATA
3-199

4

II

MAC625 Series. MAC635 Series
350

300 I'\.

~
Izw 250
a:
a:

::>
<.>

!;i

~

l"-,.

~

~

'a:""

"-IX

~K

MA~

~

i

I

60Hz
k 50Hz

"'

100

r---.,.:: I-- .........

1.8

MACS25

1.4
;;;! 1.2
~ 1
j:!: 0.8

MACS35

-

-

.,

I-

~ 0.5

en
~

r=

I I

100

11111

~

~- ..:::- t-- r:-

I
I

o

II lin

2

~ 1.5

........ ......

50

!~~N&Id~'~o ~~

~ 2.2

60Hz
50 Hz'

::>

'"

V

:-..... ...........

Ii; 150
w

~AC635

200 I'.. r-....

2.4

I
J

0.4
0.2
10 - 3

10 1
TIME (CYCLES)

LI
10-2

10-1

100

101

102

103

104

TIME (SEC)

Figure 4. Transient Thermal Impedance

Figure 3. Surge On-State Current Rating
(Non-Repetitive)

RMS On-State Current versus Maximum Power Dissipation
50,---,---,--,,--,,--,---,---,---,

40
35
~ 30

z

o

~

25

l,9 ~ 0
,,/
~~ % ::/"
".,,~~~ /'
~ ~ ~V

!;i
115 20

'"j5

•

a:

~

~

15
10

~

9=
9=
9=
9=
9=

11800
150
'120
900'500
9 = 300
0

0

~ ~I-'"'"

10

15

20

25

30

10

RMS ON·STATE CURRENT (A)

15
20
25
30
RMS ON·STATE CURRENT (A)

35

40

Figure 6. MAC635

Figure 5, MAC625

RMS On-State Current versus Allowable Case Temperature
130

E
w
a::

::>

!;;c
a::
~

:0

~

120
110
100

80

~

70

;;;!

SO

E
w

....... ~ .......

~ ~ ~ ~ ........

....

a::
::>

110

a::
~

100

!;;c

300
~ ~ ~ ~ 8=
8 = 600-

90

~~
9

-

130

:0
~
w

I

~ ~ 88 == 9012000

'"cS

~8=

150 0
9 = 1600

w

80

'"~

70

~

~

10

15

20

25

90

60

30

40

RMS ON·STATE CURRENT (A)

Figure 8. MAC635

Figure 7. MAC625

MOTOROLA THYRISTOR DEVICE DATA
3-200

MAC625 Series. MAC635 Series
Ambient Temperature versus RMS On-State Current
25

~ 20

!z
~
~
u

~

15

~ 10
z:

a

~

a:

f'..
.........

~

'r-..,.

35

~

""-

V

'\

Rth 0.5°CfW

""- ~ "-K V
I"'--

~ 30

....

Rth 1.5"CJW

I""" ="
i'- "0-

"

I'" Rth T'CfW
k" V Rth 3°CfW
r-..' ~ \ /
r....: ~ \,

5 I-- IRth: IEATI SINK THEiMAiIMPjOANfE)
I

'"'"

25

~

20

.........

a:

!;;;:

"

I

"

.....

I"'-..

i..........

b....

"

i""""'-.

""~
140

Figure 9. MAC625

....

~

~

~~
~..... I.",.

0:
~iRthiHEAI SIN1 TH~M'j IM~OA1CE)

I
I

1\

I
I

=Rth 1°CfW
......Rth 1.5"CJW
.:o.Rth 2°CfW

'<"""" ~
~~

" "

~ 15
a
en
~ 10

I

_Rt~0.5"CJW

:'- ~

....

~

ro
40
~
M
100
1ro
MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (OC)

il5
a:

"'"

r-..

I
I

I
I

I
I

\."

~

~~

~

"

20
40
60
M
100
120
MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (OC)

140

Figure 10. MAC635

•

MOTOROLA THYRISTOR DEVICE DATA
3-201

Triaes
Silicon Bidirectional Thyristors
• .. designed for full-wave ac power control applications, and specifically designed
to be used in conjunction with MOC30XX opto couplers in circuits similar to that
shown on page 206.
•
•
•
•
•

Blocking Voltages to 400 Volts
Load Current Controlled Up to 40 A
Glass Passivated Junctions for Greater Parameter Uniformity and Stability
Gate Triggering Guaranteed in Four Modes
Designed for Use with MOC Series Optoisolators Having Triac Driver Outputs

MAC3010
MAC3020
MAC3030
MAC3040
Series
TRIACs

4,8, 15,25 and 40
AMPERES RMS

250 thru 400 VOLTS

O----li~;:!~-G-O
~

MT2

•

~

CASE 77-05
(TO-225AA)
STYLE 5
-4

MAXIMUM RATINGS

Currant Ratings
Rating

Symbol

-8

-15

-25

-40
-401

Unit

-4
IT(RMS)

4

8

15

25

40

Amps

Peak Nonrepetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 110·C)

ITSM

30

80

150

250

300

Amps

Circuit Fusing Considerations
(TJ = -40 to +llO"C,t = 8.3ms)

12t

3.6

26

90

260

370

A 2s

Peak Gate Voltage (t .. 2 /£s)

VGM

±5

Peak Gate Power (t .. 2 /£s)

PGM

10

20

20

20

20

Watts

PG(AV)

0.5

0.5

0.5

0.5

0.5

Watts

IGM

11

12

12

12

12

Amps

TJ

*

-40 to +125

*

·C

-

6

8

8

8

30

in. lb.

VORM

250
400

250
400

250
400

250
400

250
400

Volts

On-State RMS Current (see Figure 1)
(Full Cycle Sine Wave 50 to 60 Hz)

Average Gate Power
(TC = BO"C, t .. 8.3 ms)
Peak Gate Current (t .. 2 !£S)
Operating JunCtion Temperature Range
Storage Temperature Range
Mounting Torque
MAC3010/MAC3030, Note 1
MAC3020/MAC3040

MT1

~o

ASE 221A-04

±10 ±10 ±10 ±10

Volts

·C

-40 to +150

Tstg

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking voltage such that the voltage applied exceeds the rated blocking
voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-202

(TO-220AB)
STYLE 4
-8, -15, -25

d:\~

~

CASE 283-04
STYLE 2

,,

-40

--

\"

CASE 311-02
STYLE 2

-401

MAC3010, MAC3020, MAC3030, MAC3040 Series
THERMAL CHARACTERISTICS
Symbol

-4

-8

-15

-25

-40
-401

Unit

Thermal Resistance, Junction to Case

R/lJC

3.5

2.2

2

1.2

0.9

0c/w

Thermal Resistance, Junction to Ambient

R/IJA

75

60

60

60

1

0c/w

Characteristic

+ l00"C.

*TJ - 40" to

-8, -15. -25 CURRENT RATINGS
ELECTRICAL CHARACTERISTICS (TC

= 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted.)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25"C
TJ = 125°C
Peak On-State Voltage
(lTM = v'2 IT(RMS) A Peak; Pulse Width '" 2 ms, Outy Cycle'" 2%)
MAC3030·S
MAC3030·15
MAC3030·25

Gate Trigger Voltage (Continuous dc)
(VO = 12 V, RL = 100 Ohms)
MT2( +), G( +); MT2( -), G( -) All Types
(TJ = 125°C, RL = 10 k Ohms)
MT2( +), G( +); MT1( -), G( -) All Types

VGT

=

FIGURE 1 -

...............

100

II

r........

//

...............

~

a:

:::0

:;:

Full cyclo 01
ffi
Go.
9O - r- 50/60 Hz current.

.,,"

~

~

/'"

0

""

./

r---..
,,/

!....

.....

\

'"

Power DISSipation

8.0;;;

110

5

105

~ U

6 .o~

~

a:

:::>

95

'"
o

~ 90

;::
o

...

Go.

~

...'"
...>

2.0ffi

~

85

~
0;

80

~

Volts

-

-

1.6
1.6
1.S5
mA

40

Volts

-

-

2

0.2

-

-

-

IH

40

mA

tgt

-

1.5

-

IJ.S

dv/dt(c)

-

5

-

VI/Ls

dv/dt

-

40

-

VI/Ls

75

~O

•

IT(RMS). RMS ON·STATE CURRENT lAMP)

2.0

- --

0.25

Powe, Dissipation

~

v·

\

...-- \
0.50

,...-

~" r--

,,/

1.5 ~

C
a:
UJ

;::

1.0 ~
UJ

0.5

'"a:«
~

«

;;

\

o
0.75

1.00

ITIRMS)RMS ON·STATE CURRENT lAMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-203

o

>=

Full cycle 01 \
50/60 Hz current.

o

~

i"

::

I\,

65
60

4.0

Ku~e1er~ting
\ll

~. 70

~

~O

"\

~100 r--

Go.
en ~

4.0 ffi

I"-

~

,.

p.A
mA

B. REFERENCE: AMBIENT TEMPERATURE

Cu~ont oo,a:ing

.,-

10
2

CURRENT DERATING AND POWER DISSIPATION

0 __

~ 80

-

= 0.52 IT(RMS)

A. REFERENCE: CASE TEMPERATURE

~

-

100 mAl

Critical Rate of Rise of Off·State Vpltage
(Exponential Waveform, TC = 125°C)

G

Unit

= 200 mA, Gate Open)

Critical Rate of Rise of Commutation Voltage
(lTM = 2 IT(RMS) A Peak, Commutating di/dt
Alms, Gate Unenergized, TC = SO°C)

r-......

Max

IGT

Gate Controlled Turn-On Time
(lTM = 2 IT(RMS) A Peak, IG

11

Typ

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 100 Ohms)
MT2( +), G( +); MT2( -), G( -) All Types

Holding Current
(VO = 12 V,ITM

Min

IORM,IRRM

1.25

Q...~

MAC3010, MAC3020, MAC3030, MAC3040 Series
-8. -15. -25 CURRENT RATINGS
ELECTRICAL CHARACTERISTICS (TC

=

25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C

IORM,IRRM

-

Peak On-State Voltage
(lTM = v'2 IT(RMS) A Peak; Pulse Width"" 2 ms, Duty Cycle"" 2%)
MAC3030-8
MAC3030-15
MAC3030-25

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 100 Ohms)
MT2( +), G( +); MT2( -), G( -) All Types

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 V, RL = 100 Ohms)
MT2( +), G( +); MT2( -), G( -) All Types
(TJ = 125°C, RL = 10 k Ohms)
MT2(+), G(+); MT1(-), G(-) All Types

VGT

Holding Current
(Vo = 12 V, ITM

=

-

"""'" ~

~105

'\.

pA
rnA

-

1.6
1.6
1.85
rnA

40

IH

-

tgt

-

1.5

-

p.s

dv/dt(c)

-

5

-

V/p.s

dv/dt

-

40

-

V/p.s

2

40

rnA

FIGURE 3 - ON-STATE POWER DISSIPATION
40

I

/"

"-

/

~

.........

.......

0

......

I:
::!

10
2

-

-

= 0.52 IT(RMS)

RMS CURRENT DERATING

I

i~

-

Full cycle of ._
50160 Hz current

115

~

Unit

100 rnA)

~

~125 ~

Max

Volts

0.2

Critical Rate of Rise of Off-State Voltage
(Exponential Waveform, TC = 125°C)

FIGURE 2 -

-

-

Critical Rate of Rise of Commutation Voltage
(lTM = 2 IT(RMS) A Peak, Com mutating di/dt
Aims, Gate Unenergized, TC = 80"C)

II

Typ

Volts

-

= 200 rnA, Gate Open)

Gate Controlled Turn-On Time
(lTM = 2IT(RMS) A Peak, IG

Min

.........

'\.
I
I
MAC3010140-8 -

I

I

I

.......

......

... V
/'"

0

MAC30~0/40-15 r- - MAC301~40-25
I

II I

12

16

I
20

./

II I
24

~

/"

L'

TJ ~ 125"<:
Full cycle of 50160
Hz current.

10

28

V

15

ITIRMSI. RMS ON·STAll: CURRENT lAMPS)

ITIRMSI. RMS ON·STAll: CURRENT lAMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-204

20

25

MAC3010, MAC3020, MAC3030, MAC3040 Series
-40. -401 CURRENT RATINGS
ELECTRICAL CHARACTERISTICS (TC

=

25·C, and Either Polarity of MT2 to MTl Voltage unless otherwise noted.)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM) TJ = 25·C
TJ = 110·C

Min

Typ

Max

Unit

-

10
2

mA

-

1.85

Volts
mA

IDRM.IRRM

Peak On-State Voltage (Either Direction)
(ITM = 56 A Peak; Pulse Width .. 2 ms, Duty Cycle .. 2%)

VTM

-

Gate Trigger Current (Continuous de)
No = 12 V, RL = 1000)
MT2(+), G(+); MT2(-), G(-)

IGT

-

-

40

Gate Trigger Voltage (Continuous de)
(VD = 12 V, RL = 100 0)
MT2(+), G(+); MT2(-), G(-)
(RL = 10 ko, TJ = 110·C)
MT2(+), G(+); MT1(-), G(-)

VGT

-

2

-

Volts

50

mA

Holding Current
(VD = 12 V, ITM

IH

-

-

tgt

-

1.5

-

p,s

dv/dt(c)

-

5

-

V/p,s

dv/dt

-

30

-

V/p,s

0.2

= 200 mA, Gate Open)

Gate Controlled Turn-On Time
(lTM = 56 A pk, IG = 200 mAl
Critical Rate of Rise of Commutation Voltage
(lTM = 56 A pk, Commutating di/dt = 22 Alms,
Gate Unenergized, TC = SO·C)
Critical Rate of Rise of Off-State Voltage
(Exponential Waveform, TC = 110·C)

!LA

•
FIGURE 5 -

FIGURE 4 - RMS CURRENT DERATING

G
2-

...
II:

~ 110

II:

~100

!

...c
...ca

-

~ t::::::,..

90

u

0

c

~

0

Curves apphcable lor lull
ot-- sine wave 01 50/60 Hz current.

t-- t--

I-

U)

Curve. applicable lor lull
sine wave of 50/60 Hz current

~ r-J

0

~

0

Istted

::>
~

c><

t-- TJ = 1100C

Stud / - - -

U

L

sr P":
d ""-

./

V'

/

L
1L

IL

/

. / I-""

0

~

~

I-

Y

0

'~

::l

c

ON-STATE POWER DISSIPATION

0

10

20

30

40

IT(RMS). RMS ON-STATE CURRENl (AMPS)

~~w~~·,rl!!-~"'''''

10

20

30

40

IT(RMS). RMS ON-STATE CURRENT (AMPS)

"'; ,,-. '-:J'A,'f"::~"L"'~'d",,;w.~£'i·~;i'ii'hf'::lf'~~~~~r;tJnm~~t:.'V.
'i'M~.
.'~
. .NJ.'
~~~

~~;~J.~~ftn;.;rp'.~:;y.J¥~:#~::>\'$' <~;.~_ ·'!&!·~~1~1.~~

MOTOROLA THYRISTOR DEVICE DATA
3-205

MAC3010, MAC3020, MAC3030, MAC3040 Series
USING THE MOC OPTO COUPLERS AND MAC TRIAC SERIES DEVICES
The MOCXXXX Opto Coupler can be used as a triac
driver with MACXXXX-X by selecting RC to limit the surge
current thru the coupler and yet supply enough gate drive
to the triac to gua~antee complete turn on. The maximum
surge current rating of the coupler (lTSM) determines the
minimum value of RC:
R'
Vin(pk)
C (mm) = ITSM (coupler)
For high line 110 Vac nominal voltage: Vin(pk) = 187 V.
187V
RC (min) = 1.2 A = 155.8 ohms

must be specified to sustain the repetitive surge (ITSM).
In practice. the RMS value is chosen attwotimes actual so
the surge rating of the triac will be very high.
Inductive Loads
Motors. solenoids. and magnets are typical problem
loads for the triac and coupler. Since the triac turns off as
the current approaches zero. but the inductive voltage is
still high. it appears to the triac as a rise in applied voltage.
If this rate of rise in voltage exceeds the dv/dt commutating of the triac or the dv/dt static ofthe coupler. the triac
will turn back on.
Snubber Network

In practice, this would be a 180 ohm resistor.
The maximum gate drive required determines the
maximum value of RC:
VIH-VrM
RC (max) = IGlitriac)
Where VIH is the inhibit voltage of the coupler and VTM is
the on-state voltage of the triac in the coupler.
For the MOC3040 and MAC3040 -25 VIH = 40 V. VTM
= 3.0 V, end IGT = 40 mAo
RC (max) =

•

40 V-3.0 V
40 mA
= 930 ohms

Vturn off voltage =Vpk sin t/> ... Vpk'" 187 V

In practice, the gate is driven two or three times IGT to
guarantee complete turn on. RC (max)would be 460 ohms
or 310 ohms .
The line voltage at turn on is:
VLine at turn on = RC' IGT +VTM(coupler) +VGntriac)

=

=

For the above example VGntriac) 2.0 V. IGT 80 mAo RC
= 210 ohms.
V Une at turn on = (210) (0.08 A) + 3.0V + 2.0V = 22 V
Resistive Loads
Resistive heating elements and incandescent lamps are
typical loads for the triac. Cold incandescent lamps can
draw 5-6 times their hot RMS value on start up. The triac

VCC

When the dv/dt of the circuit exceeds the capability of
the coupler or triac. a RSCS network is placed across the
main terminals ofthe triac. In most applications the snubber used for the triac will also protect the coupler. The RS
also limits the energy from the Cs destroying the gate
region on the first use of the triac.
Since the power factor of the board (cosine of the I-V
phase shift) is not always known. a typical design can be a
starting point for scope verification.
For power factor = 0.1. 110 V nominal line.
Setting the dv/dt C (triac) equal to the circuit VTurn off
over the snubber time constant and solving for RS:
dv/dt C (triac) =

V~~~;ff

Vrurn off
RS = dv/dt (c) Cs
For MAC3030-25 dv/dt (c) = 5.0 Vips. and choosing Cs
pF

=0.1

187 V
RS = (5.0 VI ps1l0.1 pF)
RS

= 374 ohms

In practice. RS is selected empirically. For more details
seeAN780A.

Rin
Opto
Coupler

MOTOROLA THYRISTOR DEVICE DATA
3-206

MBS4991
MBS4992
MBS4993

Silicon Bidirectional Switch
(Plastic)
Bidirectional Diode Thyristors

SBS
(PLASTIC)

... designed for full-wave triggering in Triac phase control circuits, half-wave SCR
triggering application and as voltage level detectors. Supplied in an inexpensive
plastic TO-226M package for high-volume requirements, this low-cost plastic
package is readily adaptable for use in automatic insertion equipment.
•
•
•
•
•

Low Switching Voltage - 8 Volts Typical
Uniform Characteristics in Each Direction
Low On-State Voltage - 1.7 Volts Maximum
Low Off-State Current - 0.1 pA Maximum
Low Temperature Coefficient - 0.02 %rC Typical

EftD

MT2 0

o MT1

G

M"0~
G~'-

MT2

:;.<

CASE 29-04
ITO-226M)
STYLE 12

MAXIMUM RATINGS
Rating
Power Dissipation
DC Forward Current
DC Gate Current (off-state only)
Repetitive Peak Forward Current
(1% Duty Cycle, 10 ps Pulse Width, TA = 100·C)
Non-Repetitive Forward Current
(10 ps Pulse Width, TA = 25·C)
Operating Junction Temperature Range
Storage Temperature Range

Symbol

Value

Unit

PD

500

mW

IF

200

mA

IG(off)

5

mA

IFM(rep)

2

Amps

IFM(nonrep)

6

Amps

TJ

-55 to +125

·C

Tstg

-65 to + 150

·C

MOTOROLA THYRISTOR DEVICE DATA
3-207

•

MBS4991 • MBS4992 • MBS4993
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol

Min

Typ

Max

Unit

MBS4991
MBS4992. MBS4993

Vs

6

8
8

10
9

Vdc

MBS4991
MBS4992
MBS4993

IS

175
90
175

500

pAdc

-

0.3
0.1

0.5
0.2

Vdc

-

-

100
500

pAdc

-

0.7
0.2
0.3

1.5
0.5
0.75

mAdc

-

0.08
2
0.08

6

1
10
0.1
10

-

1.7
1.7

Characteristic
Switching Voltage
Switching Current

Switching Voltage Differential (See Figure 10)

MBS4991
MBS4992. MBS4993

Gate Trigger Current
(VF = 5 Vdc. RL = 1 k ohm)

MBS4992
MBS4993

IGF

Holding Current

MBS4991
MBS4992
MBS4993

IH

Off-State Blocking Current
(VF = 5 Vdc. TA = 25·C)
(VF = 5 Vdc. TA = 85·C)
(VF = 5 Vdc. TA = 25·C)
(VF = 5 Vdc. TA = 100·C)

-

IVS1- VS21

-

120
250

pAdc

IB
MBS4991
MBS4991
MBS4992. MBS4993
MBS4992. MBS4993

Forward On-State Voltage
(IF = 175 mAdc)
(IF = 200 mAde)

•

7.5

VF

MBS4991
MBS4992. MBS4993

Vdc

-

1.4
1.5

Peak Output Voltage (Cc = 0.1 p.F. RL = 20 ohms. (Figure 7)

Vo

3.5

4.8

-

Vdc

Turn-On Time (Figure 8)

ton

-

1

-

p.s

Turn-Off Time (Figure 9)

toff

-

30

Temperature Coefficient of Switching Voltage (- 50 to + 125·C)

TC

-

+0.02

-

o/oI"C

100

pA

Switching Current Differential (See Figure 10)

151-IS2

-

p.s

TYPICAL ELECTRICAL CHARACTERISTICS

FIGURE 2 - SWITCHING CURRENT versus TEMPERATURE

FIGURE 1 - SWITCHING VOLTAGE ve,sus TEMPERATURE

80

104

§
N

1.03

'"'"'"

1.01

;;:

~

'"
«

N

1.00

'"
>
'"z

099

>-

0.98

~

~

~

-

~

'"~
'"z
~
ij5

40
30

1\
'\.

1.0

~

I'--..

>-

0.97

10

:i:
0.96
-75

-50

-15

+15

+50

+75

+100

+115

-75

-50

-15

+15

--

+50

TA, AMBIENT TEMPERATURE laC)

TA, AMBIENT TEMPERATURE lOCI

MOTOROLA THYRISTOR DEVICE DATA
3-208

+75

+100

+115

MBS4991 • MBS4992 • MBS4993
FIGURE 4 - OFF-8TATE BLOCKING CURRENT
versus TEMPERATURE

FIGURE 3 - HOLDING CURRENT versus TEMPERATURE

10.0

B.O

1....

~ 7.0
N

~ 6.0

ili'
o

~

\

50

....

~

40

a""""
'"z

30

§

Normalized
to
15°C

\

\\

2.0

"'"

o
-75

-50

1.0

w
....

0.1

~
+15

-15

«
....

-

L

~
~

0

~

+50

+75

+100

./

0.01

+115

-50

-25

TA. AMBIENT TEMPERATURE (OCI

+25

70

u;

-

~

6.0

0

?

w

'"
«

~
>
>-

0

'/

+100

+125

=>
~

>-

/'
40

30

0

'"
~

10

.;

10

>

,

-

.....--!';;:.....

.,;

50

=>

/'

1'<

-~

,

i'-

~RL=500'!

...;;

-Rl=100~!

l"~L =50,!

/'

:-....

RL=20',
RL = 5"

I III

00 1
3.0

+75

FIGURE 6 -PEAK OUTPUT VOLTAGE (FUNCTION OF RLANDCcl

10

2.0

+50

TA. AMBIENT TEMPERATURE lOCI

FIGURE 5 - ON-STATE VOLTAGE versus FORWARD CURRENT

1.0

VpS.OV- r - -

~
:!
a>

o
"'. 1.0

'"

/

~

""""=>
u
'"
z

4.0

5.0

001

Q 02

005

01

02

II

05

TA = 25°C
1.0

Ce. CHARGING CAPACITANCE I"FI

VF. FORWARD ON·STATE VOLTAGE (VOLTSI

FIGURE 7 - PEAK OUTPUT VOLTAGE TEST CIRCUIT
10 K

D.U.T.

L

MOTOROLA THYRISTOR DEVICE DATA
3-209

2.0

5.0

10

•

MBS4991 • MBS4992 • MBS4993
FIGURE 8 - TURN-ON TIME TEST CIRCUIT
Mercury Relay

1.0 k!l
Anode
Voltage

+

-=- 12 V

1.0 k!l

Turn-on timeismeasuredfromthetime

Vs

D.U.T.

Vs is achieved to the time when

the anode voltage drops to within 90% of the difference between

Vs and VF'

FIGURE 9 - TURN·OFF TIME TEST CIRCUIT

Anode

100 l!

+
5.0 V

•

500 l!

Voltage

C

-=-

+------:::oIt:~----. MT2

Mercury
Relay
(N.D.)

D.U.T .

L -_ _ _ _~~---------~

MTl

With the SBS In conduction and the relay contacts open, close the contacts to cause anode A2 to be driven negative. Decrease C until the SBS
JUst remains oft when anode A2 becomes positive. The turn off time, toff. IS the time from initial contact closure and until anode A2 voltage

reaches zero volts.

FIGURE 10 - DEVICE EQUIVALENT CIRCUIT. CHARACTERISTICS AND SYMBOLS
+I

MT2

MT2

G

+V

IH2
MTl
CIRCUIT SYMBOL

MT1

J

VF2

-I

EQUIVALENT CIRCUIT

CHARACTE RISTICS

MOTOROLA THYRISTOR DEVICE DATA
3-210

MCR22-2
thru 8

Plastic Si licon Controlled
Rectifiers
• .. designed and tested for repetitive peak operation required for CD ignition, fuel
ignitors, flash circuits, motor controls and low-power switching applications.
•
•
•
•

150 Amperes for 2 I-£S Safe Area
High dv/dt
Very Low VF at High Current
Low-Cost TO-226AA

SCRa
1.5 AMPERES RMS
50 thru 800 VOLTS

~

AO

G
OK

K

CASE 29-04
(TO-226AA)
STYLE 10

G
A

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Reverse Blocking Voltage
MCR22-2
MCR22-3
MCR22-4
MCR22-S
MCR22-8

Circuit Fusing Considerations, TA
(t = 2 to 8.3 ms)
Peak Gate Power, TA

= 25°C

= 2SoC

= 2SoC

Average Gate Power, TA

= 2SoC

Peak Forward Gate Current, TA
(300 ILS, 120 PPS)

Unit
Volts

SO
100
200
400
SOO

On-State Current RMS
(All Conduction Angles)
Peak Nonrepetitive Surge Current, TA
(1/2 Cycle, Sine Wave, SO Hz)

Value

VRRM

= 2SoC

Peak Reverse Gate Voltage
Operating Junction Temperature Range @ Rated VRRM and VORM
Storage Temperature Range
Lead Solder Temperature
(Lead Length;;. 1/1S" from case, 10 s Max)

IT(RMS)

1.S

Amps

ITSM

15

Amps

12t

0.9

A 2s

PGM

O.S

Watt

PG(AV)

0.1

Watt

IFGM

0.2

Amp

VRGM

S

Volts

TJ

-40 to +125

°C

Tstg

-40 to +150

°C

-

+230

°C

MOTOROLA THYRISTOR DEVICE DATA
3-211

•

MCR22-2 thru MCR22-8
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance. Junction to Case

Characteristic

RruC

50

°CIW

Thermal Resistance. Junction to Ambient

RruA

160

°CIW

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted. RGK = 1000 Ohms.)
Symbol

Characteristic
Peak Forward Blocking Voltage
(TC = 125°C)

TC
TC

Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7 Vdc. RL = 100 Ohms)
(Anode Voltage = Rated VORM. RL = 100 Ohms)

TC
TC
TC

Holding Current
(Anode Voltage

TC
TC

12 Vdc)

= 25°C
= -40°C
= 25°C
= -40°C
= 125°C
= 25°C
= -40°C

Forward Voltage Application Rate
(TC = 125°C)

Unit
Volts

-

-

-

-

10
200

!LA
!LA

VTM

-

1.2

1.7

Volts

IGT

-

30

200
500

!LA

VGT

-

O.S
1.2

Volts

VGO

0.1

IH

-

2

-

5
10

rnA

dv/dt

-

25

-

V/p.s

-

1.2

-

p.s

40

-

p.s

IORM.IRRM

Gate Trigger Current (Continuous dc). Note 1
(Anode Voltage = 6 Vdc. RL = 100 Ohms)

Max

50
100
200
400
600

MCR22-2
MCR22-3
MCR22-4
MCR22-6
MCR22-S

Forward "On" Voltage
(lTM = 1 A peak)

•

Typ

VORM

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TC = 25°C
TC = 125°C

=

Min

Turn-On Time

ton

Turn-Off Time

totl

-

-

-

-

Note 1. RGK Current Not Included in Measurement.

CURRENT DERATING
FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE

FIGURE 1 - MAXIMUM CASE TEMPERATURE

~

I"'" t:--...
.......

................

" ""

~

........

180'

~

~

~

r'-...' I'-..

~

180'

,de

J

020.4060.810
121.416
ITIAVI. AVERAGE ON·STATE CURRENT IAMPSI
R8JC
COOLING TIME

TJ

18

20

02

R8JA
COOliNG TIME

5O"CW
3.0 ms

TJ

125"<:

l6O"CW
3.0 ms

125"<:

MOTOROLA THYRISTOR DEVICE DATA
3-212

0.4
0.6
08
ITIAVI. AVERAGE ON·STATE CURRENT IAMPI

10

MCR22·2 thru MCR22·8
FIGURE 4 - PEAK REPETITIVE CAPACITOR
DISCHARGE CURRENT

FIGURE 3 - TYPICAL FORWARD VOLTAGE
5.0

180

V"::
./~

3.0

~ 180

V

TJ

2.0

125 0C

~

250C _

f--

~

0.7

!5
~

0.5

~ 60

03

'"~

0.2

:!...

I

u

~

is

1-

I I

::>

40
20

12Hz

r-.

0
-20

I II

~
f--tw--J
IT r 5tetOjtan{s
=

1.0

~

.....

I

3.0
5.0 7.0 10
30
two PEAK CURRENT DURATION (I's)

I

z

r--

80

c[

I

~

1

1.0 Hz

r--

w

10
::!!

....
r---

a 100

JV/
iL

:-

!5~ 120

1/ V

j [/

;

~ 140

V

50 70

100

I

S

I I

z
~

I

~

~ o. 1
,.:.
- 0.07

FIGURE 5 - PEAK REPETI_TIVE SINUSOIDAL CURVE
180
in16D

..........::

i140

.......

I-

i5 120

0.05

I

~ 80
~
60

11

5
'"
is

I

~

~

II

00 1

o

15

20

"

r--

........

~~

801

.......

1=1 tw I--

-20

25

1.0

3.0

two

VT. INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

I"--~

,~

7\.

40 f- ITM

20 f-

1.0 11/z

J"'" r~

......

:. 0
10

05

r-.

!5100
u

1/

0.02

~I--

r-....

a:

I

0.03

;:::: .....

5.0 7.0 10
30
PEAK CURRENT DURATION II'S)

~r-.

50

70 100

FIGURE 6 - THERMAL RESPONSE
0
O. 7

w

o. 5
o. 3

~

t;

ffi
a::

_

~c

-

O. 2

c[w

::!!~

ffi ~ D. I

:I:::!!

:: ~ 0.0 7
~ ~o.o 5

.....
l-

-

......
I-f-

in

:i

0.0 3V"

-'

0.0 2

I!'

~

0.0 1
01

0.2

05

10

20

50

10

20

50

100

200

1. TIME 1m.)

MOTOROLA THYRISTOR DEVICE DATA
3-213

500

1000

2000

5000

10000

•

MCR22-2 thru MCR22-8
TYPICAL CHARACTERISTICS

FIGURE 8 - TYPICAL GATE TRIGGER CURRENT

FIGURE 7 - GArE TRIGGER VOLTAGE
0.8

'" '"

i!
~

~ 0.7

...

'"~

S
>

0.&

I

VAK=7.DVRl'l00 _

'" r--..

...""

.'"
~

r-.....

r--.....

1.20

"

~

'" 0.4
C
>
-50

50
30

o. 5

0.3
-75

100

I

"" '" "-

-25
25
50
75
TJ. JUNCTION TEMPERATURE (OCI

!
i

.......
10
5.0

I!' 3.0

~ 2.0

'I'-...
100

"

'"S; 1.0

125

FIGURE 9 - HOLDING CURRENT

-40

~
c

10

20
40
60
80
100
TJ JUNCTION TEMPERATURE I"CI

-20

.l 900

1.6

I""-.....
1.0
-40

- 20

20

--r--...

1.0

~ 0.8

~~...

0.6

~ 0.4

...........

I

...........

40
60
80
100
120
TJ. JUNCTION TEMPERATURE I"CI

140

160

~

L

V

0.2

o

~

0

0.2

~./

0.4
0.8
0.8
1.0
1.2
'TIAVI. AVERAGE ON·STATE CURRENT IAMPSI

MOTOROLA THYRISTOR DEVICE DATA
3-214

/

/

II / /
/
/// / / /
/dc
r//~ V
Ii '///V

.. 1.2

~

180

/

1200 lJoo

300~00T J

4

-I--.

140

FIGURE 10 - POWER DISSIPATION

.1.8
!i
1,.
~

120

2.0

CI

•

.....

1.4

1.8

Silicon Controlled
Rectifier
Reverse Blocking Triode Thyristor
· .. designed for industrial and consumer applications such as power supplies;
battery chargers; temperature, motor, light, and welder controls.
•
•
•
•

Economical for a Wide Range of Uses
High Surge Current - ITSM = 550 Amps
Rugged Construction in Either Pressfit, Stud, or Isolated Stud
Glass Passivated Junctions for Maximum Reliability

MCR63-2
thru 10
MCR64-2
thru 10
MCR65-2
thru 10
seRs
55 AMPERES RMS
50 thru 800 VOLTS

G

AO

.("

oK

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Forward and Reverse
Blocking Voltage, Note 1
MCR63
MCR64
MCR65

-2
-3
-4
-6
-8
-10

Non-Repetitive Peak Reverse Blocking Voltage
(t .. 5 ms)
-2
MCR63
-3
MCR64
-4
-6
MCR65
-8
-10

VORM
or
VRRM

Value

Unit
Volts

50
100
200
400
600
800
Volts

VRSM
75
150
300
500
700

900

Forward Current RMS

IT(RMS)

55

Amps

Peak Surge Current
(One cycle, 60 Hz, TJ

ITSM

550

Amps

12t

1255

A 2s

PGFM

20

Watts

PGF(AV)

0.5

Watt

=

- 40 to

+ 125°C)

Circuit Fusing Considerations
(TJ = -40 to + 125°C, t = 1 to 8.3 ms)
Peak Gate Power
Average Gate Power (Pulse Width .. 2 /£s)
Peak Forward Gate Current

IGFM

2

Amps

Peak Gate Voltage -

VGFM
VGRM

10
10

Volts

Forward
Reverse

Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

TJ

-40 to

+ 125

Tstg

-40 to

+ 150

-

30

°C
°C
in. lb.

Note 1. VRRM for all types can be applied o~ a continuous de basis without incurring damage Ratings

apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate
concurrently with a negative potential on the anode.

M'OTOROLA THYRISTOR DEVICE DATA
3-215

I
I

I

CASE 263-04
STYLE 1
MCR64 Series

.

CASE 3111-02
STYLE 1
MCR63 Series

l,

CASE 311-112
STYLE 1
MCR65 Series

MCR63-2 thru MCR63-10. MCR64-2 thru MCR64-10. MCR65-2 thru MCR65-10
THERMAL CHARACTERISTICS
Symbol

Characteristic
Thermal Resistance, Junction to Case
Pressfit and Stud
Isolated Stud

Max

Unit

'CIW

ROJC
1
1.1

ELECTRICAL CHARACTERISTICS (TC

= 25'C unless otherwise noted.)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25'C
TJ = 125'C

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 50 G)
Gate Trigger Voltage (Continuous dc)
(VO = 12 V, RL = 50 G)

= Rated VORM, RL =

Holding Current
(VO = 12 V, RL

•

1 kG, TJ

TC
TC

= 25'C
= -40'C

TC
TC

= 25'C
= -40'C

= 125'C)

IGT

u

w

...'"«

:::>

~

...~
w

'"«u

105
85

,~ ~ ~

.\ 1\....... ~ r--...
\ "- ...... I""---. ......... r-...

:E

x

45

«

:E
U

...

,

......

I\,

\

:E

:::>

• =

-

10
2

pA.
rnA

-

2

Volts

-

40
75

-

rnA

Volts

0.2

-

-

IH

-

60

rnA

dv/dt

50

-

V/p,s

FIGURE 2 - POWER DISSIPATION

u; 60

~~

65

-

3
3.5

= 50 G, Gate Open)

FIGURE 1 - AVERAGE CURRENT DERATING

c

Unit

VGT

Forward Voltage Application Rate
(TJ = 125'C, Vo = Rated VORM)

125

Max

IORM,IRRM

Forward "On" Voltage
(lTM = 175 A Peak)

(VO

Min

..........

1m

, - - ~L

:---.....

......«

~

-

..........

'"3:

:i'
w

40

'"~

de

• =

> 30

«

:::>

90 0

:;!' 20
x

180 0

I

10

20

30

40

I

:;10
«

0::-

I

50

60

IT(AV). AVERAGE ON-STATE CURRENT (AMPS)

I

./

/
/

V

I-'

,/

-- . J'Jt.

~

"

h ~
W'
10

20

30

40

IT(AV). AVERAGE ON-STATE CURRENT (AMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-216

/

~

J//. /./

«

:E

Derate MCR65 series f--by an additIOnal 10%. f---

25

I /

9~0

I // / /'
11/ / '

:E

60 0

30 0

I I

w

\

30 0

60 0

.-{

/

180 0

50

50

60

MeR67
Series
MeR6S
Series
MeR69
Series

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristor
· .. designed for overvoltage protection in crowbar circuits.
• Glass-Passivated Junctions for Greater Parameter Stability and Reliability
• Center-Gate Geometry for Uniform Current Spreading Enabling High Discharge
Current
• Small Rugged, Thermowatt or Metal Packages Constructed for Low Thermal
Resistance for Maximum Power Dissipation and Durability
• High Capacitor Discharge Current
300 Amps (MCR67, 68)
750 Amps (MCR69)

SCRs
12 and 25 AMPERES RMS
50 thru 400 VOLTS

MAXIMUM RATINGS
Value
Rating

Symbol

Unit
MCR67 MCR68 MCR69

Repetitive Peak Forward or Reverse
Blocking Voltage, Note 1
(TJ = -40 to + 125°C)
-2
MCR67, 68, 69
-3
-6

Volts

VDRM
or
VRRM

Peak Discharge Current, Note 2

ITM

300

300

750

Amps

IT(RMS)
IT(AV)

12
8

12
8

25
16

Amps

ITSM

100

100

300

Amps

12t

40

40

375

A 2s

Peak Non-Repetitive Surge Current
(112 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
Circuit Fusing (t .. 8.3 ms)
Critical Rate-of-Rise of Current (Note 3)

Peak Gate Power (t .. 2 ,..s)

G

oK

50
100
400

On-State Current (TC = 85°C)
(1/2 Cycle, Sine Wave, 60 Hz)

Peak Gate Cu rrent (t .. 2 ,..s)

~

AO

Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range

dildt

100

AI,..s

IGM

2

Amps

PGM

20

Watts

PG(AV)

0.5

Watt

TJ

-40 to +125

°c

Tstg

-40 to +150

°c

-

Mounting Torque

75

15

8

8

in. lb.

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes: 1. VORM for all types can be applied on a continuous basis over the operating junction
temperature range without recurring damage. Ratings apply for open or shorted gate conditions
or negative voltage on the gate. Oevices should not be tested for blocking voltages such that the
supply voltage exceeds the rating of the device.
2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an
exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially
decaying current pulse.
3. Test Conditions: IG = 150 rnA, Vo = Rated VORM, ITM = Rated Value, TJ = 125°C.

MOTOROLA THYRISTOR DEVICE DATA
3-217

MCR68IMCR69 Series

#

CASE 86-01
STYLE 1
MCR67 Series

MCR67 Series. MCR68 Series. MCR69 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C
Forward On-State Voltage
(lTM = 24 Amps), Note 1
(lTM = 50 Amps), Note 1
(lTM = 300 Amps, tw = 1 ms), Note 2
(lTM = 750 Amps, tw = 1 ms), Note 2

Typ

Max

Unit

p.A
mA

-

-

10
2

-

-

2.2
1.8

VTM
MCR67,68
MCR69
MCR67,68
MCR69

-

Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 1000)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 Volts, RL = 1000)
(VO = Rated VORM, RL = 1 kO, TJ = 125°C)

VGT

2

Volts

6
6

-

7

30

1.5

mA
volts

0.2

0.65
0.40

Holding Current
(lTM = 100 mA, Gate-Open)

IH

3

15

50

mA

Latching Current
(VO = 12 Vdc, IG = 150 mA, tr';; 50/Ls)

IL

-

-

60

mA

dvldt

10

-

-

V//Ls

Critical Rate-of-Rise of Off-State Voltage
(VO = Rated VORM, Gate Open, Exponential Waveform, TJ = 125°C)
Gate Controlled Turn-On Time, Note 3
(VO = Rated VORM, IG = 150 mAl
(lTM = 24 Amps, peak)
(lTM = 50 Amps, peak)

•

Min

IORM,IRRM

-

/LS

tgt

-

MCR67,68
MCR69

-

1
1

-

-

Notes: 1. Pulse duration", 300 /LS, duty cycle'" 2%.
2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decyaing current waveform. tw is
defined as 5 time constants of an exponentially decaying current pulse.
3. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance .

FIGURE 2 - PEAK CAPACITOR DISCHARGE
CURRENT DERATING

FIGURE 1 - PEAK CAPACITOR DISCHARGE CURRENT

~ 1000
~
f-

~

MCR69

0:
0:

i3

300

'"
200
0:

«
::I:

l1l

100

'"~

0

c

...

:Ii

r

-r-M~R6~
r-.68,- -

t-r--r-.

w

fLO
:os
0:

r--

--

L

fb:
2.0

'"~

0.6

r-- r---

c
w 0.4

N

~tw-l

1.0

0.8

- -- -

::l
«
:;; 0.2
0:

lvv =5 time constants

20
0.5

0:

i3

'"Z
5.0

10

20

50

two PULSE CURRENT DURATION (m,)

25

75
50
TC. CASE TEMPERATURE (OC)

MOTOROLA THYRISTOR DEVICE DATA
3-218

100

125

MCR67 Series. MCR68 Series. MCR69 Series
FIGURE 3 - CURRENT DERATING
MCR67,68

125
~ 120

~

i"""o ~
~

:::>
f-

« 110

~

105

'"<..>«

95

X

"

85

U

80

f-

f-

w

'"
;3

............

Half Wave ' "

90

«

'"

~
15

~ t-....... de
~

~
~

........

w
-'

\.

..j
'"..
'"

75
2.0

10

8.0

5.0

"-

115

l"': t"'-....
I" .......... .........

110

de

105

"-

100

~

85

x

80

Half wave"'"

«

20

4.0

0

;::

;t 14

V

~

V V

0

a:

l:

~

10

>

«

....-':V

«

D::'

~

4.0

;; 2.0

in 32

..

>>-

~
z

de_

/'

'>-='

-

/

~
0
a:

l:

/

..'"
..
..

~ 80

>

:>

./

D::'

2.0

4.0

5.0

./ ~

w

~

,,-

0

,

o

10

8.0

/

./

V

/V ,/' de

16

~

TJ"1250C

Half Wave

/

24

;t

~ P"
1.0

20

16

FIGURE 6 - MAXIMUM POWER DISSIPATION
MCR69

/. / '

8.0

w

'";;!iw

/

12

8.0

IT(AV). AVERAGE ON·STATE CURRENT (AMPS)

H'lfW~ve_

/

~
z

"

75

U

f-

FIGURE 5 - MAXIMUM POWER DISSIPATION
MCR67,68

18

"" """-

"'-"-

90

IT(AV). AVERAGE ON·STATE CURRENT (AMPS)

'"f-f-

~

«
'" 95
;:

\

1.0

........

a: 120
:::>

w
fw 100

:::>

125

w

~ 115

~

FIGURE 4 - CURRENT DERATING
MCR69

V

V

V

h ~
4.0

TJ" 125°C

8.0

12

20

16

IT(AV). AVERAGE ON·STATE CURRENT (AMPS)

IT(AV). AVERAGE ON·STATE CURRENT (AMPS)

FIGURE 7 - THERMAL RESPONSE

w

..
~

~

13
a: _

07
05
03

I---'~

02

-,0

..-

«w

"'~

~;;:

01

f-""

-

ZruclII .- RruC. rill

,,'"
,...0 007
t- tt:

~ ~ 005

in

:

oro

>-

002

-

001
01

02

03

05

10

20

30

50

100

200

300

t. TIME Im'l

MOTOROLA THYRISTOR DEVICE DATA
3-219

500

1k

2k

3k

5k

10k

•

MCR67 Series - MCR68 Series - MCR69 Series
FIGURE 8 - GATE TRIGGER CURRENT

FIGURE 9 - GATE TRIGGER VOLTAGE

10

!Z
w
a::
a::

~

3.0

ffi

2.0

'"'"ii:

1.4

5.0
Vo = 12 Volu - j - -

- ---

.... 1.0
w

~

'"ffi

0.5

-

RL=100n

r-----

VD'= 12 V~IU _
RL = 1001l

......

1.2

...........

r-.......

1.0
~

N

........

J"....

I"......

O.B

...........

~ 0.3

~ 0.2

I'

o

z:

-so

-40

-20

0

20

40

60

BO

100

120

0.5
-60

140

-40

-20

0

TJ, JUNCTION TEMPERATURE (OCI

20

FIGURE 10 - HOLDING CURRENT

I

2.0

I

I

Vo = 12 Volts _
ITM = 100 rnA

t--.,

I'---- I'---.

1.0

.......

O.B

........

...........

----

r---...
.............

0.5

0.3
-60

-40

40

60

BO

TJ, JUNCTION TEMPERATURE (OCI

3.0

•

r---

-20

0

20

40

60

BO

100

120

TJ, JUNCTION TEMPERATURE (OCI

MOTOROLA THYRISTOR DEVICE DATA
3-220

140

100

120

140

MCR70
Series
MCR71
Series

Silicon Controlled
Rectifiers
Reverse Blocking Triode Thyristor
· .. designed for overvoltage protection in crowbar circuits.
• Glass-Passivated Junctions for Greater Parameter Uniformity and Stability
• Center-Gate Geometry for Uniform Current Spreading Enabling High Peak
Current Capability
• High Capacitor Discharge Current Capability
850 Amps (MCR70)
1700 Amps (MCR71)
• Hermetically-Sealed Metal Packages

SCRs
35 and 55 AMPERES RMS
50 thru 400 VOLTS

G

AO

.("

oK

MAXIMUM RATINGS
Value
Rating

Symbol

Repetitive Peak Forward or Reverse Blocking
Voltage, Note 1
MCR70, 71-2
MCR70, 71-3
MCR70, 71-6
Peak Discharge Current, Note 2

MCR70 MCR71

Unit
Volts

VDRM
or
VRRM

50
100
400

ITM

850

1700

Amps

IT(RMS)
IT(AV)

35
22

55
35

Amps

ITSM

350

550

Amps

12t

510

1255

A 2s

Critical Rate-of-Rise of Current, Note 3

dildt

100

Forward Peak Gate Power (t '" 20 its)

PGM

20

Watts

On-State Current (TC '" 75°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C)
Circuit Fusing (t '" 8.3 ms)

200

PG(AV)

0.5

Watts

IGM

2

Watt

Operating Junction Temperature Range

TJ

-40 to +125

·C

Tstg

-40 to +150

·C

30

in. lb.

Storage Temperature Range

-

Mounting Torque

ACAS....~
til'"

CJ STYLE 1
MCR71 Series

•

AiI'.5

Forward Peak Gate Current (t '" 20 its)

Forward Average Gate Power

CASE 175-03
STYLE 1
MCR70 Series

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Notes: 1. The rated voltage can be applied over the rated operating junction temperatures without
incurring damage. Ratings apply for shorted-open or shorted-gate conditions or negative voltage
on the gate. Devices should not be tested for blocking capability in a manner such that the
voltage supplied exceeds the rated blocking voltages.
2. Rating is for tw = I ms. See Figure I for ITM limits of an exponentially decaying current pulse
of various durations.
3. Test Conditions: IG = 150 rnA. VD = Rated VDRM. ITM = Rated Value. TJ = 125°C.

... :.~,' ,ij<:~.~~1.;~,;
,'j Y.;';'#'h~~~f\T·~iif..'.'>iL1 '..,.,,;.':'fM;""twt...fr..t£2$'jhti~J!·.'
4x .J~-4~.~.. .~ ~=~~,.th~W*p~ '~~~i ~~. ~..fM~~;'rr..~jj.({7./ .~~~
MOTOROLA THYRISTOR DEVICE DATA
3-221

MCR70 Series. MCR71 Series
ELECTRICAL CHARACTERISTICS (TC

25'C unless otherwise noted.)

=

Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25'C
TJ = 125'C
On-State Voltage, Note 1
(lTM = 70 A)
(lTM = 175 A)
(lTM = 850 A, tw = 1 ms) Note 2
(lTM = 1700 A, tw = 1 ms) Note 2

IORM,IRRM

VTM

Max

Unit

-

-

10
2

rnA

-

series
series
series
series

Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 100!l)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 12 Volts, RL = lOOn)
(Vo = Rated VORM, RL = 1 ko., TJ

VGT

pA
Volts

1.85
2.1

2

10

30

-

1

1.5

0.2

125'C)

-

1.5
1.7
6
7

-

-

rnA
volts

-

-

Holding Current
(lTM = 0.5 A, Gate-Open)

IH

3

15

50

rnA

Latching Current
(VO = 12 Vdc, IG

IL

-

30

60

rnA

10

-

-

V/I£S

=

150 rnA, I r .. 5OI£S)

Critical Rate-of-Rise of Off-State Voltage
(VO = Rated VORM, Gate Open, Exponential Waveform, TC
Turn-On Time, Note 3
(VO = Rated VORM, IG = 150 rnA)
(lTM = 70 Amps, peak)
(lTM = 110 Amps, peak)

•

Typ

-

MCR70
MCR71
MCR7_0
MCR71

=

Min

dvldt

=

125'C)
I£S

ton

-

MCR70 series
MCR71 series

1
1.2

-

Notes: 1. Duty Cycle .. 1%, Pulse Width .. 300 p.s.
2. Characteristic applies for tw = 1 ms. tw is defined as 5 time cgnstants of an exponentially decaying current pulse.
3. The gate controlled turn-on time in a crowbar circuit will,blt inffuenced by the circuit inductance .

FIGURE 2 - PEAK CAPACITOR DISCHARGE
CURRENT DERATING

FIGURE 1 - PEAK CAPACITOR DISCHARGE CURRENT

1

ie
:IE

~2000

...

--

I--.

~

~ 1000
u

...

!,..-MCR71

~

./

"';c~

c:
c:

I

13

:;g

~

5:l

500

c(
%

r--

1;l

~
:5

~ 0.6
::;;
c:

IT~

~

........

0.4

- - ,

I---

r--

0.2

,to

50
0.5

0.8

N

200

...:E 100

r---

'" 1.0

w

'w- t--,w 5 time constants
1.0

3.0
10
t w, PULSE CURRENT DURATION (m,)

30

50

o

o

50

25

75

TC. CASE TEMPERATURE (DC)

MOTOROLA THYRISTOR DEVICE DATA
3-222

100

125

MCR70 Series. MCR71 Series
FIGURE 3 - AVERAGE CURRENT DERATING
MCR70
12

5["'....
5

."

0

r-- T)125 0C

'"

5

__

0

~

5

t-.."

~"

_'\

/

0

~
~ I'"a

-!la

~af...-

=

5.0

10

15

20

25

30

35

......

~
w
a:

105

::>

!;;:

~

-...;;;:

~

~

>w

~

r---.

de

r-......

~

::>

,.«X

5

U

w

w

>

,.«

,.
,."x
:>
0::"
::>

>-

5

o

10

20

30

40

=
40

L
L

50

J

Half Wave

40

50

V

30
20
10

./

o ./"
o

60

IL

~

10

ITlAV). AVERAGE ON·STATE CURRENT lAMPS)

/ V
'/

20

de

V

[/

J

'";;::

.........

5
5

35

60

'"~

[ , -......
~

«
'"
u

,.
,.

30

«>-

Half Wave

85

25

[

FIGURE 6 - POWER DISSIPATION
MCR71

'">-

~

20

[

ITlAV). AVERAGE ON·STATE CURRENT lAMP)

FIGURE 5 - CURRENT DERATING
MCR71

'"

15

10

ITlAV). AVERAGE ON·STATE CURRENT lAMP)

12 5

~al-

a = ConductIon Angle _

~

oL50

40

~

V

/

.L ~

0

'"

65

/
/

0

Conduction Angle

.."".. a '" 180 0

/ ~-

~=1800
/
/
V

/

Yde

5

o

FIGURE 4 - POWER DISSIPATION
MCR70

V

V
TJ

30

40

~

125 0 C

50

60

ITIAV). AVERAGE ON-STATE CURRENT lAMPS)

•

FIGURE 7 - TYPICAL THERMAL RESPONSE
10
7
5

=

-

3

I--

2

L,.....- r-

I

7

5
Z~JCII) ~ rll)e R~JC

3

I I [ Il'il

2
00 I
005

01

02

05

10

20

50

10
I.

I III
20

50

100

200

500

10k

20k

50k

TIME 1m,)

~W"'~"!T __'(n·~iO'III"~_D;'¥;';~~~~ff.

~';ID~~4i
<..>

2.0

V~ = 12 ~

~

'"

....
'"
....«w

'"fi3

>

............
1.0

-

'"

w

'"
12
~

~
........

N

:::;

~

10

'"5!

08

«

r-...

0.7

«
:=; 0.5

'"0z
-40

-20

20

40

60

80

I
Va = 12 Volts
RL = lOOn

"

..........

.............

........

r---...

N

:::;

r--.... ....
100

120

.............

~ 0.6
o

z

0.3
-60

I

1.5
14

o

RL=100!!-

!;!

I

w

'"~

~

140

04
0.3
-60

-40

20

-20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE IOC)

TJ. JUNCTION TEMPERATURE 1°C)

FIGURE 10 - HOLDING CURRENT
0

I

0

............
0

I'-..-

-

........

•

V~=12)_ r--ITM = 100 mA

.........

r---...
...............

5

o3

-60

··40

-10

10

40

60

80

100

110

140

TJ. JUNCTION TEMPERATURE 1°C)

?If,l,~1h~~F;J$l~#tli+t'~~Jll't·;.,Ji:ii#1:Hf~ ..q:M::;;m,r,ftI~~·r:~P;;lq
MOTOROLA THYRISTOR DEVICE DATA
3-224

I

MCR72
Series

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
· .. designed for industrial and consumer applications such as temperature, light
and speed control; process and remote controls; warning systems; capacitive
discharge circuits and MPU interface.

SCRs
8 AMPERES RMS
50 thru 600 VOLTS

• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Low Trigger Currents, 200 pA Maximum for Direct Driving from Integrated
Circuits

AQ

•

CASE 221A-04
(TO-220AB)
STYLE 3

MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Forward and Reverse Blocking Voltage, Note 1
(TJ = -40 to 110°C)
(1/2 Sine Wave, RGK = 1 kO)
-2
-3
MCR72
-4
-6
-8
On-State RMS Current (TC = 83°C)

Value

Unit
Volts

VDRM
or
VRRM
50
100
200
400
600
IT(RMS)

8

Amps

'TSM

100

Amps

12t

40

A 2s

Peak Gate Voltage (t '" 10 /Ls)

VGM

±5

Volts

Peak Gate Current (t '" 10 /Ls)

IGM

1

Amp

Peak Gate Power (t '" 10 /Ls)

PGM

5

Watts

PG(AV)

0.75

Watts

TJ

-40 to +110

°c

Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = -40 to 110°C)
Circuit Fusing (t = 1 to 8.3 ms)

Average Gate Power
Operating Junction Temperature Range

Note 1. Ratings apply for negative gate voltage or RGK = 1 kn. Devices shall not have a positive gate voltage concurrently with a
negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse
blocking capability such that the voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-225

(cant.)

MCR72 Series
MAXIMUM RATINGS - continued
Rating
Storage Temperature Range

Symbol

Value

Tstg

-40to+1S0

·C

8

in. lb.

-

Mounting Torque

Unit

THERMAL CHARACTERISTICS
Charactaristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

ELECTRICAL CHARACTERISTICS (TC

=

Max

Unit

RruC

2.2

·CIW

RruA

60

·CIW

2S·C, RGK = 1 kO unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current, Note 1
(Rated VORM or VRRM) TJ = 2S·C
TJ = 110·C

IORM,IRRM

Min

Typ

Max

Unit

-

-

10
SOO

p.A
p.A

On-State Voltage
(lTM = 16 A Peak, Pulse Width .. 1 ms, Outy Cycle .. 2%)

VTM

-

1.7

2

Volts

Gate Trigger Current (Continuous dc), Note 2
(VO = 12 V, RL = 1000)

IGT

-

30

200

/LA

Gate Trigger Voltage (Continuous dc)
(VO = 12 V, RL = 1000)
(VO = Rated VORM, RL = 10 kO, TJ

VGT

-

O.S

1.S

0.1

-

-

IH

-

-

6

mA

dv/dt

-

10

-

V//LS

tgt

-

1

-

/LS

Holding Current
(VO = 12 V, ITM

=

=

110·C)

Volts

100 mAl

Critical Rate of Rise of Forward Blocking Voltage
(VO = Rated VORM, TJ = 110·C, Exponential Waveform)

•

Symbol

Gate Controlled Turn On Time
(VO = Rated VORM, ITM = 16 A, IG

= 2 mAl

Notes: 1. Ratings apply for negative gate voltage or RGK = 1 kn. Devices shall not have a positive gate voltage concurrently with a negative voltage

on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
2. Does not include RGK current.

FIGURE 2 - ON·STATE POWER DISSIPATION

FIGURE 1 - AVERAGE CURRENT DERATING
110~~'----r---'r---'----r----r---'----'

......in
.

16r---'-~-r----r---'----r---'r---.----'

~

z

0

12

>=
;t

iii
c

..
..

a: B.O

w

'"
<.>

~

:;
:::>
:;

w
to

~

::i

x 80

.

w

...u

4.0 1--+....,.~~.£,.....~---1--+---+--+--!

>

:;

10
0

2.0

4.0

6.0

B.O

2.0

ITIAV). AVERAGE ON·STATE CURRENT lAMP)

4.0

6.0

ITlAV), AVERAGE ON·STATE CURRENT lAMP)

MOTOROLA THYRISTOR DEVICE DATA
3-226

B.O

MCR12 Series
FIGURE 3 - NORMALIZED GATE CURRENT

FIGURE 4 - GATE VOLTAGE

3.0
t-

~

2.0

a:
a:

~

~

i'--

w
t-

«

'"~

1.0

.........

~
'"«

~

~

........

ffi

::::;

'"
~

.........

«

...........

::IE

a:

"

0

0.5

0.3
-40

-20

.........

20

0.6

~

i'--

0.5

...........

o
>

N

z

0.7

o

40

60

80

"

90

TJ. JUNCTION TEMPERATURE IOC)

i'
100

0.2

'"~

o. 1

140

-60

........

~

03

tw
~

>

120

0.4

..........

-40

.......

-20
TJ. JUNCTION TEMPERATURE IOC)

•

'MOTOROLA THYRISTOR DEVICE DATA
3-227

MCR100
Series

Plastic Silicon Controlled
Rectifiers
Reverse Blocking Triode Thyristors

SCRs
0.8 AMPERE RMS
100 thru 600 VOLTS

PNPN devices designed for high volume, line-powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for larger
thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic
TO-226AA package which is readily adaptable for use in automatic insertion
equipment.
•
•
•
•
•

Sensitive Gate Trigger Current - 200 JJA Maximum
Low Reverse and Forward Blocking Current - 100 JJA Maximum, TC = 125'C
Low Holding Current - 5 mA Maximum
Glass-Passivated Surface for Reliability and Uniformity
Also Available with TO-5 or TO-18 Lead Form

G

AO>-----1~~--oo K

,:I!
(TO-226AA)
STYLE 10

I

MAXIMUM RATINGS
Rating

Symbol

Peak Reverse Blocking Voltage
MCR100-3
MCR100-4
MCR100-6
MCR100-8

Unit
Volts

100
200
400
600

Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
Peak Forward Surge Current, TA
(1/2 cycle, Sine Wave, 60 Hz)

Value

VRRM

= 25'C

IT(RMS)

0.8

Amps

ITSM

10

Amps

0.415

A 2s

Circuit Fusing Considerations, TA
(t = 1 to 8.3 ms)

= 25'C

12t

Peak Gate Power -

= 25'C

PGM

0.1

Watts

PGF(AV)

0.01

Watt

IGFM

1

Amp

VGRM

5

Volts

TJ

-65 to +110

'C

Tstg

-40 to +150

'C

+230

'C

Forward, TA

Average Gate Power -

Forward, TA

Peak Gate Current (300/Ls, 120 PPS)

Forward, TA

Peak Gate Voltage -

Reverse

= 25'C

= 25'C

Operating Junction Temperature Range @ Rated VRRM and VORM
Storage Temperature Range

-

Lead Solder Temperature
« 1/16" from case, 10 s max)

MOTOROLA THYRISTOR DEVICE DATA
3-228

MCR100 Series
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

RruC

75

°CIW

Thermal Resistance, Junction to Ambient

RruA

200

°CIW

Symbol

Min

Characteristic

ELECTRICAL CHARACTERISTICS (RGK

=

1000 Ohms)

Characteristic
Peak Forward Blocking Voltage
(TC = 125°C)

-

10
100

p.A

VTM

-

1.7

Volts

-

200

p.A

-

O.S
1.2

Volts

0.1

-

-

5
10

mA

IORM,IRRM

Forward "On" Voltage, Note 1
(lTM = 1 A peak @ TA = 25°C)
Gate Trigger Current (Continuous dc), Note 2
(Anode Voltage = 7 Vdc, RL = 100 Ohms)

TC

=

25°C

IGT

Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)
(Anode Voltage = Rated VORM, RL = 100 Ohms)

TC
TC
TC

25°C
-40°C
125°C

VGT

Holding Current
(Anode Voltage

TC
TC

=
=
=
=
=

25°C
-40°C

IH

7 Vdc, initiating current

=

20 mAl

Unit
Volts

100
200
400
600

MCR100-3
MCR100-4
MCR100-6
MCR100-S

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TC = 25°C
TC = 125°C

=

Max

VORM

-

-

p.A

Notes: 1. Forward current applied for 1 ms maximum duration, duty cycle'" 1%.
2. RGK current is not included in measurement.

FIGURE 2 - MCR100-7, MCR100-S CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)

FIGURE 1 - MCR 100-7, MCR10D-S CURRENT DERATING
(REFERENCE: CASE TEMPERATURE)

~ 120
w

~ 110

I~ ~

«
~ 100

55

:;;

90

5

80

w

'"

~

'"
~

70

j
«

60

,1=

"""'II!!!! Iii;;;:"...

~

;;;:- .............
'0 ~

,

........

\.

0::::

CONJuCTIO~ ANG[E7\!'

~~

"'" " ,,-" ~

\

30 0

~

~
a;
«

CASE MEASUREMENT
POINT - CENTER OF
......... -..........E~T PORTION

90~

60 0

1200

'"w -

~u
",,=-

~~ 80

I'-- ~
180
~ .........

co=:>
~~

~«
«cr;

"'w
60
=:>0..

",i'ij

0

x~

«

:;;

:;;

~

50

«

40

x

'"U

-

-

o

ffi

",0..

'\.

::::-.......

~~
x>-

.=

«W

"'''' 30
:=u
.«

10

ANGLE
CASE MEASUREMENT
POINT - CENTER OF

..............

50

"-

\

1'..."- 0

30 0

.N

~ COlNOUCTl6N

~ ~ ~ r-...
~ ~ ~ ......

««

:E

-

FIGURE 2 - CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE I

0.1

0.2

I

N~

","'"~'9~ ~ I"::
60 0

0.3

-

FlAT PORTION

120 0

o

_-

0.4

~
180 0

0.5

IF(AV). AVERAGE FORWARD CURRENT (AMP)

IF(AV.l. AVERAGE FORWMo CURRENT (AMP)

liliIBBlBlIU_ _IIil::11111111II111111_7Sf),10TOROLA THYRISTOR DEVICE DATA
3-231

MCR106
Series

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devides designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems
where reliability of operation is important.
•
•
•
•

Glass-Passivated Surface for Reliability and Uniformity'
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

SCRs
4 AMPERES RMS
60 thru 600 VOLTS

G

AO----~~~----~OK

,~
AK

•

CASE 77-05
(TO-225AA)
STYLE 2

MAXIMUM RATINGS

Symbol

Rating
Peak Reverse Blocking Voltage, Note 1

Value

MCR106-2
-3
-4
-6
-8

Unit
Volts

VRRM
60
100
200
400
600

RMS Foward Current
(All Conduction Angles)

IT(RMS)

4

Amps

Average Forward Current
TC = 93'C or
TA = 30'C

IT(AV)

2.55

Amps

Peak Non-RepetitivlI Surge Current
(1/2 cycle, 60 Hz, TJ = -40 to + 110'C)

ITSM

25

Amps

Circuit Fusing Considerations
(TJ = -40 to +110'C,t = 1 t08.3ms)

12t

2.6

A 2s

Peak Gate Power

PGM

0.5

Watt

PG(AV)

0.1

Watt

Peak Forward Gate Current

IGM

0.2

Amp

Peak Reverse Gate Voltage

VRGM

6

Volts

TJ

-40 to +110

'c

Average Gate Power

Operating Junction Temperature Range

Note 1. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative
(cant.)
potential on the anode. When checking forward or reverse blocking capability. thyristor devices should not be tested with a constant current
source in a manner that the voltage applied exceeds the rated blocking voltage.

~~~!,a£_:H~~ji~W~1'1mttl'un~Vf?llill:t~IMU.~~I
MOTOROLA THYRISTOR DEVICE DATA
3-232

MCR106 Series
MAXIMUM RATINGS -

continued
Rating

Symbol

Value

Tstg

-40 to +150

°C

-

6

in. lb.

Storage Temperature Range
Mounting Torque, Note 1

Unit

THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

RIiJC

3

°CIW

Thermal Resistance, Junction to Ambient

RIiJA

75

°CIW

Characteristic

ELECTRICAL CHARACTERISTICS (TC

= 25°C and

RGK

= 1000 ohms unless otherwise noted.)

Characteristic
Peak Forward Blocking Voltage
(TJ = 110°C, Note 1)

Symbol
MCR106-2

60
100
200
400
600

·3
-4
·6

·8
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 110°C

-

VTM

Gate Trigger Current (Continuous dc), Note 2
(VAK = 7 Vdc, RL = 100 ohms)
(VAK = 7 Vdc, RL = 100 ohms, TC = -40°C)

IGT

Gate Trigger Voltage (Continuous dc)
(VAK = 7 Vdc, RL = 100 ohms, TC

VGT

Holding Current
(VAK = 7 Vdc, TC

Typ

Max

Unit
Volts

-

-

-

10
200

pA
/LA

2

Volts

IORM,IRRM

Forward "On" Voltage
(ITM = 4 A Peak)

Gate Non-Trigger Voltage
(VAK = Rated VORM, RL

Min

VORM

-

-

-

pA
200
500

-

-

1

Volts

VGO

0.2

-

-

Volts

IH

-

-

5

mA

dv/dt

-

10

-

V//LS

= 25°C)

= 100 ohms, TJ = 110°C)

= 25°C)

Forward Voltage Application Rate
(TJ = 110°C)

Notes: 1. Torque rating applies with use of compression washer (B52200·FOO6 or equivalent). Mounting torque in excess of 6 in. lb. does not
appreciably lower case-ta-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN209B).
For soldering purposes (either terminal connection or devic~ mounting), soldering temperatures shall not exceed
results. an activated flux (oxide removing) is recommended.

2. RGK current is not included in measurement.

MOTOROLA THYRISTOR DEVICE DATA

3-233

+ 200°C.

For optimum

MeR106 Series
CURRENT DERATING
FIGURE 1 - MAXIMUM CASE TEMPERATURE

FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE
IIO~---r----r----r----r----r----r----r---.

ITlAV). AVERAGE FORWARD CURRENT lAMP)

ITIAV). AVERAGE FORWARD CURRENT lAMP)

•

MOTOROLA THYRISTOR DEVICE DATA
3-234

MCR202
thru
MCR206

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Annular PNPN devices designed for industrial/military applications such as relay
and lamp drivers, small motor controllers and drivers for larger thyristors, and in
sensing and detection circuits.
•
•
•
•
•

Sensitive Gate Trigger Current - 200 pA Maximum
Low Reverse and Forward Blocking Current - 100 pA Maximum, TC = 125°C
Low Holding Current - 5 mA Maximum
Passivated Surface for Reliability and Uniformity
TO-1S Hermetically Sealed Metal Package

SCRs
0.5 AMPERES RMS
30 thru 200 VOLTS

G

.~

AO

oK

~
(TO-206AA)
STYLE 6

MAXIMUM RATINGS
Symbol

Rating
Peak Off-State and Reverse Voltage

VORM
VRRM

MCR202
MCR203
MCR204
MCR206
RMS On-State Current
(All Conduction Angles) (See Figures 4 & 5)
Peak Non-Repetitive Forward Surge Current
(112 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 1 to 8.3 ms)
Peak Forward Gate Power

Value

Unit
Volts

30
60
100
200

IT(RMS)

0.5

Amps

ITSM

6

Amps

12t

0.15

A 2s
Watt

PGM

0.1

PGF(AV)

0.01

Watt

Peak Forward Gate Current
(300 ILS, 120 PPS)

IGFM

1

Amp

Peak Reverse Gate Voltage

VGRM

4

Volts

TJ

+ 125
-65 to + 150

°C

Average Forward Gate Power

Operating Junction Temperature Range @ Rated VRRM and VORM
Storage Temperature Range

Tstg

-65 to

°C

~~~~~i"iI;:_~:."""
MOTOROLA THYRISTOR DEVICE DATA
3-235

MCR202 thru MCR206
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R9JC

150

0c/w

Thermal Resistance, Junction to Ambient

R9JA

400

°CIW

Symbol

Min

CharllCterllltic

ELECTRICAL CHARACTERISTICS (RGK

= 1000 Ohms)

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VDRM or VRRM) TC = 25°C
TC = 125°C

IDRM,IRRM

Peak On-State Voltage
(ITM = 1.2 A peak, ImS, Duty Cycle .. 1%)
TC
TC

Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)

TC
TC
TC

Holding Current
(Anode Voltage

TC
TC

= 7 Vdc, initiating current = 20 mAl

= 25°C
= -65°C
= 25°C
= -65°C
= 125°C
= 25°C
= -65°C

Unit

10
100

pA
pA

1.7

Volts

-

200
350

pA

0.8
1.2

Volts

0.1

-

-

5
10

mA

-

-

VTM

Gate Trigger Current (Continuous dc) (Note 1)
(Anode Voltage = 7 Vdc, RL = 100 Ohms)

Max

IGT
VGT

IH

Note: 1. RGK current is not included in measurement.

FIGURE 3 - FORWARD VOLTAGE

FIGURE 1 - CURRENT DERATING
(REFERENCE: CASE TEMPERATUREI

5.0

~ 125~~~-.~-.~-r~-r~-r~~~~~~-'

~
=>

•

~
=
w

...

~

3.0

II

V

_.-

105

/ /

85

5
= 65~~---+--~--+-~
-'

0:

~

~ 45~~~-4---4---+--~--~--+---+---+-~
=>

:Ii

25L-~~~__~__~__~__~__~__~__L-~

0

>-

~

a

II

I

I

0.2

I I

~
z

~
z
«
t;

I

I I

w

>-

z

I

o. 1

!!!!;

.~. 0.07

0.6

~~
"'<
"'2
:lie

I

0.5

o

0.8

"'S:
>-

0.7

;::'i

~

'"~

1.0

~ 0.3

100
200
300
400
IT(AV), AVERAGE ON-STATE CURRENT (rnA)

FIGURE 2 - POWER DISSIPATION

Ii:

250 C

:Ii

-'

=:,.

V

/1/

w

X
'"

/

TJ = 125 0 C

2.0

:Ii

w
:

~

/~ V

0.05
0.4

=>>~:

.1

0.03

x-

"'~
:
Ii.0

;;
~

0.02

0.2

I

0.0 1

o

II I

0.5

1.0

1.5

2.0

VTM,INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

IT(AV),AVERAGE ON-STATE CURRENT (rnA!

,<

MOTOROLA THYRISTOR DEVICE DATA
3-236

2.5

MCR202 thru MCR206
FIGURE 5 - CURRENT DERATING
(REFERENCE: AMBIENT TEMPERATURE)

FIGURE 4 - SURGE RATINGS
~

:;

10

!!
I-

ffi
0::

7.0

0::

=>

u

W

5.0

I-

'"

~

z
0

w

130

--

I-

...f\......f\.-

-

-l

r--"",

"'--,,,
CD;;:;

3.0

~g;

"'~,
I\~

90

"'::;
:;0..

.......

~ 2.0

=>:;

70

X

'"

'"

~

~ 1.0

2.0

1.0

3.0

5.0

70

10

20

30

50

'"
;::

.r

iD
:;

1--1 CYCLE

~

......

Z

w

\ \

o

80

,,= CONDUCTION ANGLE

.....

\.

~c

.\..IBO

O l\..

~O\.

......
240

160

400

320

IT(AV),AVERAGE ON·STATE CURRENT (mA)

NUMBER OF CYCLES AT 60 Hz

FIGURE 6 - THERMAL RESPONSE
I-

f5
~

1.0
0.7
0.5

-

'"

~~ 0.3

~

wZ

~~ 0.2

~Cii
",w

1---''""'"

~~ 0.1
~ ~ 0.07
No::
~ ~ 0.05

oJChl =rhlOJC

~I-

~

0.03

z

0.02

.........

-E
0.01
0.0001

0.0003 0.0005

0.001

0.003 0.005

0.03

0.01
t, TIME

0.05

0.1

0.3

(SECONOS)

MOTOROLA THYRISTOR DEVICE DATA
3-237

0.5

1.0

3.0

5.0

10

•

MCR202 thru MCR206
TYPICAL CHARACTERISTICS
FIGURE 7 - GATE TRIGGER VOLTAGE

FIGURE 8 - GATE TRIGGER CURRENT
10

0.8

g

0.7

o

~

~

;o

>
~

'"..:
~

c

~ 5.0
::::;

~
~

O. 6

<
:IE

0::

"' i:">.

~ 2.0

"""-

O. 5

~l.0
0::
=>

"'-f"...

O. 3
50

25

l"""- t-...

...
ffi

"'"
-25

.....

iZ

o. 4

-50

-.... ,......

O. 5

"'" ""

'"'"
.......

"'"

100

75

TJ, JUNCTION TEMPERATURE 1°C)

,...
=
O. 2
~

"

125

150

'",...-0. 1
!E

-50

-25

0
25
50
75
TJ, JUNCTION TEMPERATURE (OC)

FIGURE 9 - HOLDING CURRENT

3.0
RGK'= lKU

ffi

2.0

N

::::;

--.. ............

~

0::

•

o

~

z

1.0

t"".......

W

0::

... O.
~

..... Joo..

7

--"",

§'" O.5

.......

o

:c

:.:"
- O. 3
-50

-25

...........

<

0
25
50
75
100
TJ, JUNCTION TEMPERATURE (OC)

125

150

MOTOROLA THYRISTOR DEVICE DATA

3·238

100

125

MCR218
Series

Thyristors
Silicon-Controlled Rectifiers
· .. designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gatecontrolled, solid-state devices are needed.

SCAs
8 AMPERES RMS
50 thru 800 VOLTS

• Glass-Passivated Junctions
• Blocking Voltage to 800 Volts
• TO-220 Construction - Low Thermal Resistance, High Heat Dissipation and
Durability

G

AOO---I~~---oO K

MAXIMUM RATINGS
Rating
Repetitive Peak Off-State Voltage, Note 1
Repetitive Peak Reverse Voltage

Symbol
VRRM
VORM

MCR218-2
-3
-4
-6
-8
-10

Value

Unit
Volts

50
100
200
400

600
600

Forward Current RMS
(All Conduction Angles)
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
Operating Junction Temperature Range
Storage Temperature Range

IT(RMS)

8

Amps

ITSM

80

Amps

12t

34

A 2s
Watts

PGM

5

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to +125

"C

Tstg

-40 to + 150

·C

Note 1. VRRM for all types can be applied on a continuous de basis without incurring damage. Ratings applv for zero or negative gate voltage.
Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-239

•

MCR218 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TJ

= 25°C unless otherwise noted.)

Symbol

Min

Typ

Max

Unit

-

10
2

mA

VTM

-

1.5

1.8

Volts

Gate Trigger Current (Continuous dc)
(VO = 12 V, RL = 100 Ohms)

IGT

-

10

25

mA

Gate Trigger Voltage (Continuous dc)
(VO = 12 V, RL = 100 Ohms)
(Rated VORM, RL = 1000 Ohms, TJ

VGT

-

-

2.5

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C

IORM,IRRM

Peak On-State Voltage, Note 1
(lTM = 16 A Peak)

=

Critical Rate of Rise of Off-State Voltage
(Rated VORM, Exponential Waveform, Gate Open, TJ
Note 1. Pulse Test: Pulse Width

=

=

•

'"E

...~ _

~

a

f---- ~--+--+--L--,.I

a= Conduction Angle

. / de

9.011---+----1r---r---=--+1-20-0---.,r:,lSO:="0- i......
---:I"c-+----I

~i:

600 )~/ / '
~!. 6.011--+--:-if---7'17'7"'7'f---:7"'If--+--t----t

.... c

h~

a=300

:;:

go

/"

h~Y

~ 30~~""'T-V_+----+-+---;---t---t
~

1.0

2.0

16

30

mA

dv/dt

-

100

-

V/p.s

FIGURE 3- NORMALIZED GATE TRIGGER CURRENT
3. 0

4.0

3.0

6.0

5.0

7.0

S.O

C[

g

5; 2. 0

"'"

II'!

'"i3

1. 5

ffi

'"~

........

1. 0
.... O.9

........

~;i

:E

:sz

......

.......

O. 5

........

O. 4

.3
'" 0-60
.JP

-40

1 3.0

i....

>

ffi

O. 7

-- --

;i

~ O. 5

o

z

""-

2. 0

f"'-.....

:::>

s'"!:=!

o.

~ O. 3

-60

-40

-20

0

20

40

60

SO

'"
z 1. 5

9o

:c

1.0
9
O.

~

.7

~

r--

SO

100

z

120

i'--r-,.
......

,

120

140

......

.......
.........

o

~

100

60

FIGURE 5 - NORMALIZED HOLDING CURRENT

o

0:9

40

4. 0

~ 1. 2

~

20

-20

TJ. JUNCTION TEMPERATURE (OC)

!:;

.... 1 0

~

~

FIGURE 4 - NORMALIZED GATE TRIGGER VOLTAGE
1. 3

'"
iZ'
'"

i'-..

'" O. 7

IT(RMS). RMS ON·STATE CURRENT (AMPS)

...

-

1 ms, Duty Cycle"" 2%.

~~~+-~-r-+~

21----_f_

-

-

125°C)

FIGURE 2 - ON-STATE POWER OISSIPATION

~

0.2

= 0.5 A,

5r---~----~~---r--~----r---r---'

z
o

Volts

IH

125°C)

Holding Current
(Anode Voltage = 24 Vdc, Peak Initiating On-State Current
0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms)

/LA

140

o. 5

o

-60

-40

20

-20

40

60

SO

TJ. JUNCTION TEMPERATURE (OC)

TJ. ,IUNCTION TEMPERATURE (OC)

MOTOROLA THYRISTOR DEVICE DATA
3-240

100

120

140

MCR218FP
Series

Silicon Controlled Rectifiers
Reverse Blocking Thyristors
· .. designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.

ISOLATED SCRs
8 AMPERES RMS
800 VOLTS

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
• 80 A Surge Current Capability
• Insulated Package Simplifies Mounting

Ao

.r'"

G
0

K

l~
STYLE 2

MAXIMUM RATINGS
Rating

Repetitive Peak Off-State Voltage, Note 1 (TJ
Repetitive Peak Reverse Voltage
MCR21S-2FP
MCR21S-4FP
MCR21S-6FP
MCR21S-SFP
MCR21S-10FP
On-State RMS Current (TC

=

=

Symbol

-40 to + 125°C)

Unit

Volts
50
200
400
600
SOO

+ 70°C) Full Cycle Sine Wave 50 to 60 Hz, Note 2

Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC
Preceded and followed by rated current

Value

VDRM
VRRM

=

+ 70°C)

= + 70°C. t = 1 to S.3 ms)
Peak Gate Power (TC = + 70°C, Pulse Width = 10 !-'s)
Average Gate Power (TC = + 70°C, t = S.3 ms)
Peak Gate Current (TC = + 70°C, Pulse Width = 10 !-'s)
RMS Isolation Voltage (TA = 25°C. Relative Humidity '" 20%)

Circuit Fusing (TC

Operating Junction Temperature
Storage Temperature Range

IT(RMS)

S

Amps

ITSM

SO

Amps

12t

26

A 2s
Watts

PGM

5

PG(AV)

0.5

Watt

IGM

2

Amps

V(lSO)

1500

Volts

TJ

-40 to +125

°c

Tstg

-40 to + 125

°c

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

MOTOROLA THYRISTOR DEVICE DATA
3-241

•

MCR218FP Series
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

ROJC

2

°CIW

Thermal Resistance, Case to Sink

ROCS

2.2 (typ)

°CIW

Thermal Resistance, Junction to Ambient

ROJA

60

°CIW

Characteristic

ELECTRICAL CHARACTERISTICS (TC

=

25°C unless otherwise noted.)

Characteristic
Peak Forward Blocking Current
(Rated VORM @ TJ = 125°C)

TJ = 25°C

Min

IORM

-

Typ

Max

Unit

-

-

10
2

mA

-

2

mA

pA

Peak Reverse Blocking Current
(Rated VRRM @ TJ = 125°C)

IRRM

-

Forward "On" Voltage, Note 1
(lTM = 16 A Peak)

VTM

-

1

1.8

Volts

IGT

-

10

25

mA

Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, Rl = 100 Ohms)

VGT

-

-

2.5

Volts

Gate Non-Trigger Voltage
(Anode Voltage = Rated VORM, Rl = 100 Ohms, TJ = 125°C)

VGO

0.2

-

-

Volts

Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, Rl = 100 Ohms)

•

Symbol

TC = 25°C

Holding Current
(Anode Voltage = 12 Vdc)

IH

-

16

30

mA

Turn-On Time
(lTM = 8 A. IGT = 40 mAdc)

tgt

-

1.5

-

p.s

Turn-Off Time (VORM = Rated Voltage)
(lTM = 8 A, IR = 8 A)
(lTM = 8 A, IR = 8 A, TJ = 125°C)

tq

-

15
35

-

Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated VORM, !;'xponential Waveform)

dv/dt

p.s

-

100

V/p.s

Note 1. Pulse Test: Pulse Width" 300 ILS, Duty Cycle" 2%.

TYPICAL CHARACTERISTICS

:z

o
~
"gj
15

15

~

12

a:

a=

~" - -

-1al-

~~

120°

!i;~

2:-

a=

o

w

~

75~__~__~__~~~A-__~__~__~~~

0

1

3

4

~
a::-

5

60°

0

/90)- / ' V

~ ::.,/

tI

o

180° /' ~

.h ~ ' /

30°

h

:;;;:
~

/'
/"

CONDUCTION ANGLE

V

2

6

IT(RMS), RMS ON-STATE CURRENT (AMPS)

IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

Figure 2. On-State Power Dissipation

Figure 1. Current Derating

MOTOROLA THYRISTOR DEVICE DATA

3-242

de

MCR218FP Series
80

100
70
TJ = 25"<:

50

V

30
!C
:E
:$

I~

20

a:

::::>
u

!C
::IE
:$

""" "-

75

ffi
a:

a:
::::>
u

V

70

~

w

'"
a:

::::>

'"
...:
""~

f

10

~

I-

V,25°C

"V

I-

15
a:

V. V

./

...-

:::E
~

65

'"

'~

r---- TC = 85"<:
f=60Hz

~

"""

6()

SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT

-

0

~a:

P\:h
I'-..
....... 1'-.

55
1

e

4
NUMBER OF CYCLES

w

~

6

8'

10

Figure 4. Maximum Non-Repetitive Surge Current

~

z

0

::::>
'"
o

w

!

+1

~

.!f. 0,7

0.5

REVERSE
BLOCKING
REGION
IH

0.3

_
-V __-r-J~ID~R~M~~~~~~~
+V

0.2

REVERSE
AVALANCHE
REGION

0.1
0,4

1.2

2

2.8

3.6

5.2

4.4

_I

•

VDRM
FORWARD
BLOCKING
REGION

vF. INSTANTANEOUS ON-5TATE VOLTAGE (VOLTS)

Figure 3. On-State Characteristics

w

u

~

usa

1
0.7
0,5

.....-

: ~ 0.3
::IE :i 0.2
a: a:

........

~o

:: ~ o.1

i

Figure 5. Characteristics and Symbols

....

L.-f-'"

Z8JC{I) = R8JC. r{l)

ifi 0.07
~

0.05
./

0.03
0.02
0.01
0,1

0,2 0.3

0.5

10

20 30
50
I. TIME (ms)

100

200 300

Figure 6. Thermal Response

MOTOROLA THYRISTOR DEVICE DATA
3-243

500

1.Ok

2.0k 3,Ok S.Ok

10k

MCR218FP Series
Ei

~:;;

a:

1.6

1\
\.

o

~

!'a:5

NORMALIZED TO TJ
ANODE V = 12V

I'..

.....

1.2

.........

a:

i3

!lj

...........

0.8

........

r--...

~ 0.4

~

0
-60

1. 6

~
~

1.2

!lj

0.8

-20

20
40
60
80
100
TJ. JUNCTION TEMPERATURE (OCI

120

140

~ 1. 6

«

~

"" "'-

1. 2

!'a::5
a:

a

0.8

""'" .......... ........

'"9z

•

-40

r---

~

~ 0.4
~

0
-60

-40

-~

r- r-.

0
-60

-~

NORMALIZED TO TJ
ANODE V = 12V

@
:;;

. . r-

~
40
60
60
TJ. JUNCTION TEMPERATURE (OCI

100

rn

~

Figure 8. Gate Trigger Voltage versus Temperature

Figure 7. Gate Trigger Current versus Temperature

~

...........

~ 0.4

>

o

= 25°C_

.............

'"~

........... r-.

'"~
-40

NORMALIZED TO TJ
ANODE V = 12 V

~~

!::i
~

'"~
'"

Ei

= 25°C_

0
~
40
60
60
TJ. JUNCTION TEMPERATURE lOCI

= 25°C_

-100

rn

Figure 9. Holding Current versus Temperature

MOTOROLA THYRISTOR DEVICE DATA
3-244

~

MCR225FP
Series

Silicon Controlled Rectifiers
Reverse Blocking Thyristors
· .. designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.

ISOLATED SCRs
25 AMPERES RMS
BOO VOLTS

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting

G
Ao

.("

STYLE 2

oK

MAXIMUM RATINGS
Symbol

Rating
Repetitive Peak Off-State Voltage, Note 1 (TJ = -40 to + 125°C)
Repetitive Peak Reverse Voltage
MCR225-2FP
MCR225-4FP
MCR225-6FP
MCR225-BFP
MCR225-10FP
On-State RMS Current (TC = + 70°C) Full Cycle Sine Wave 50 to 60 Hz, Note 2
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = + 70°C)
Preceded and followed by rated current
Circuit Fusing (TC = + 70°C, t = 1 to B.3 ms)
Peak Gate Power (TC = + 70'C, Pulse Width = 10 !-'s)
Average Gate Power (TC = +70'C, t = B.3 ms)
Peak Gate Current (TC = + 70°C, Pulse Width = 10 !-'s)
RMS Isolation Voltage (TA = 25'C, Relative Humidity'" 20%)
Operating Junction Temperature
Storage Temperature Range

Value

Unit
Volts

VORM
VRRM
50
200
400
600
BOO
IT(RMS)

25

Amps

ITSM

300

Amps

12t

373

A 2s
Watts

PGM

20

PG(AV)

0.5

Watt

IGM

2

Amps

V(lSO)

1500

Volts

TJ

-40 to +125

'c

Tstg

-40 to +125

°c

•

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.

~~~,~~g~;:~~~~,:~~~~~~~~rx~aB"~".s~~~~~~·-~
k~~4\1(.';?
..~~~_~~~.Nif~fu(~~
. 'J!iii

MOTOROLA THYRISTOR DEVICE DATA
3-245

MCR225FP Series
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

ROJC

1.5

°CIW

Thermal Resistance, Case to Sink

R8CS

2.2 (typ)

°CIW

ROJA

60

°CIW

Characteristic

Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Symbol

Characteristic

Max

Unit

-

-

-

10
2

pA
mA

Peak Reverse Blocking Current
(Rated VRRM @ TJ = 125°C)

IRRM

-

-

2

mA

Forward "On" Voltage, Note 1
(lTM = 50 A)

VTM

-

-

1.8

Volts

IGT

-

-

40

mA

VGT

-

0.8

1.5

Volts

VGO

0.2

-

-

Volts

IH

-

20

40

rnA

tgt

-

1.5

-

p.s

-

15
35

-

100

-

;90°

L~

TJ

= 25°C

Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)

TC

= 25°C

Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VORM, RL
Holding Current
(Anode Voltage

=

=

100 Ohms, TJ

= 125°C)

Min

12 Vdc)

Turn-On TIme
(lTM = 25 A, IGT

•

Typ

IORM

Peak Forward Blocking Current
(Rated VORM @ TJ = 125°C)

= 40 mAdc)
Turn-Off Time (VORM = Rated Voltage)
(lTM = 25 A, IR = 25 A)
(lTM = 25 A, IR = 25 A, TJ = 125°C)

tq

Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated VORM, Exponential Waveform)

dv/dt

p.s

V/p.s

Note 1. Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2%.

TYPICAL CHARACTERISTICS
130

~

O~ ~

-Ial- r--

I\.~ ~

0

\

\

\

~

r-...

"-

\
~

o

II

""- i'..~ ..........

90° '\.

~

I

I
I

24

_
a

~

180°""

~

D..

w

'"ffi
c(

= COND~CTlON ~NGLE

~

dC"-....

""

4
8
12
16
IT(AV), ON·STATE FORWARD CURRENT (AMPSI

~
,;;:-

"""

20

Figure 1. Average Current Derating

a
16

1~

-laL

a:

'\ "- f'... "'-

a=300\ 600

80

~~

a = CONDUCTION ANGLE

~ ~ t-....

\

32

r--

= 300

60°

V/

/'

V

~ V . . . V.., V
/~ 0- ~"
~~V

I

o~~
4
o

/'

V

~

/
TJ

= 125°C

8
12
16
IT(AV), AVERAGE ON·STATE FORWARD CURRENT (AMPS)

20

Figure 2. Maximum On-State Power Dissipation

MOTOROLA THYRISTOR DEVICE DATA
3-246

MCR225FP Series
100

300

70
50

L"

V......

~

~
a:
a:

:::>
u
w

250



'"""<0:
It

V\:h
""'.......

225

J"-,.

r--- TC =

85°C
f=60Hz

~200

25°C

.!:-

7

1

, II

1""'r-..

SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT

r----

175

5

""

f'...

a:

~
/,

""'-

I-

125°C.l

20

275

~

)

30

~

~

1"')'0,

4
NUMBER OF CYCLES

10

Figure 4. Maximum Non-Repetitive Surge Current

3

I

2

1
0.7
0.5

REVERSE
IT
BLOCKING
REGION
IH

I
I
I

0.3

_
-V __-T~~'~D~RM~~~==i=~~

,

0.2

1
0.1

o

0.4

!

0.8

1.2

1.6

2.4

REVERSE
AVALANCHE
REGION

2.8

_I

•

FORWARD
BLOCKING
REGION

vF, INSTANTANEOUS VOLTAGE (VOLTSI

Figure 3. Maximum Forward Voltage

~

~

1

o.7
o. 5

ma
~ ~ D. 3

J.....-I--"

~ ~ D. 2
I-

~

~

.....Z(lJC(11

~~D 1

*

Figure 5. Characteristics and Symbols

= R(lJC. r(11

V

•

7
0.05
0.0

0.03
0.02

./

0.01
0.1

0.2 0.3

0.5

10

20

30

50

100

200 300

I, TIME (msl

Figure 6. Thermal Response

MOTOROLA THYRISTOR DEVICE DATA
3-247

500

1.0k

2.0k 3.0k 5.0k

10k

MCR225FP Series
2
5

~
::;;

1.6

@j
~
t-

ffi

\

\.

NORMALIZED TO TJ
ANODE V = 12V

a

"

1.2

~ 0.8

"'

~

t:i
~

.........

.......

:---....

~ 0.4

1.6

..........

1.2

............

~ 0.8
~
~ 0.4

.......... I---.....

C!>

G

-40 -20

~

~

~

M 100

m

>
~

0
-SO

-~

~
t-

'"

1.2

z

~
a:

::::>

(J

0.8

['--...

.........

r-.....

C!>
;;z

9
a

::c:
~

= 25°C_

"\..

«

a

............

r-

0.4

o

-~

-~

~

M

100

1~

1~

Figure 8. Gate Trigger Voltage versus Temperature

NORMALIZED TO TJ
ANODE V = 12V

::;;
a:

~

---

TJ, JUNCTION TEMPERATURE (OC)

Figure 7. Gate Trigger Current versus Temperature

5w
~ 1.S

~

-20

TJ, JUNCTION TEMPERATURE (OC)

•

-r---

C!>

0
-60

NORMALIZED TO TJ = 25°C_
ANODE V = 12V

~

'"~

~

~~

'\..

~

'"

5

= 25°C_

-~

0
~
~
~
M
TJ, JUNCTION TEMPERATURE (OC)

100

1~

Figure 9. Holding Current versus Temperature

MOTOROLA THYRISTOR DEVICE DATA
3-248

1~

MCR264-2
thru
MCR264-12

Thyristors
Silicon Controlled Rectifiers
• .. designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation.
• Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
• 400 Amperes Surge Capability
• Blocking Voltage to 1000 Volts

SCRs
40 AMPERES RMS
200 thru 1000 VOLTS

.~

AO

G

oK

(TO-220ABI
STYLE 3

MAXIMUM RATINGS
RatIng

Symbol

Peak Reverse Blocking Voltage, Note 1

Unit
Volts

VRRM
50
100
200
400
600
BOO
1000

MCR264-2
MCR264-3
MCR264-4
MCR264-6
MCR264-B
MCR264-10
MCR264-12
Forward Current (TC = BO·C)
(All Conduction Angles)
Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave)

Value

B.3 ms
1.5 ms

Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300 p.S, 120 PPS)
Operating Junction Temperature Range
Storage Temperature Range

IT(RMS)
IT(AV)

40*
25*

Amps

ITSM

400
450

Amps
Watts

PGM

20

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to +125

·C

Tstg

-40 to +150

·C

Note 1. VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative voltage. Devices
should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-249

•

MCR264-2 thru MCR264-12
THERMAL CHARACTERISTICS
I

Symbol

Max

Unit

Thermal Resistance. Junction to Case

Characteristic

R/JJC

1

0c/w

Thermal Resistance. Junction to Ambient

R/JJA

60

°CIW

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted.)
Symbol

Characteristic
Peak Forward Blocking Voltage
(TJ = 125°C)

Typ

VORM

50

MCR264-2
MCR264-3
MCR264-4
MCR264-6
MCR264-8
MCR264-10
MCR264-12

100
200
400
600
800
1000

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C

IORM.IRRM

Forward "On" Voltage. Note 1
(lTM = BOA)

-

-

VTM

Max

Unit
Volts

-

-

-

10
2

mA

1.6

2

Volts

15
30

50
90

mA

1

1.5

Volts

tJA

Gate Trigger Voltage (Continuous de)
(Anode Voltage == 12 Vde. RL == 100 Ohms)

VGT

-

Gate Non-Trigger Voltage
(Anode Voltage = Rated VORM. RL

VGO

0.2

-

-

Volts

IH

-

30

60

mA

tgt

-

1.5

-

jA.S

dv/dt

-

50

-

V/,.s

Gate Trigger Current (Continuous de)
(Anode Voltage = 12 Vde. RL = 100 Ohms. TC

•

Min

Holding Current
(Anode Voltage

=

IGT
-40°C)

= 100 Ohms. TJ = 125°C)

= 12 Vde)

Turn-On Time
(lTM = 40 A. IGT

= 60 mAde)

Critical Rate of Rise of Off-State Voltage
(Gate Open. Rated VORM. Exponential Waveform)
Note 1. Pulse Test: Pulse Width", 3OO,.s. Duty Cycle'" 2%.

FIGURE 1 - AVERAGE CURRENT DERATING

125

~~
.... ~ 1"-..- t"....

~ t'--..

~"
'\

f'...

........

~

1'1\."\\.' ,"'"

~-~

-Ia~

...........

800

o

50

I""---

I"900

"-

5.0
10
15
20
trIAV). ON·STATE FORWARD CURRENT lAMPS)"

V

!ii40
:=

60 0

~ 35

~....

........

""" """'"

1800

in 45

t--..... a = CONDUCTION ANGLE

\ f\. "a = 300"\ '\

75

FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION

a v300 2 lL' V":
L 'L IL'"
:/ V/ r......-: k--""

30

ll: 25

Nc

:

...

!:: 20
~15
ci:" 10

"-

5.0

L ~~

~V

~ ~V

o~ ~
o
5.0

1800
25

900

L ...

V
d'y

L

V~t-

-I~~~t-

a = CONDUCTION ANGLE

10
15
20
ITIAV). AVERAGE ON·STATE FORWARD CURRENT lAMPS)

-ThiS device ia rated for use in applications subject to high surge condi·
tion8. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currants.

MOTOROLA THYRISTOR DEVICE DATA
3-250

25

MCR264-2 thru MCR264-12
FIGURE 3 - GATE TRIGGER CURRENT

FIGURE 4 - NEW GATE TRIGGER VOLTAGE

40

1.1
u;
~ 1.0
o

1

i

..........

20

or::

~

""'"

~

~

~

""

~ 10

Ie

'"..t? 7. 0
-20

20

r-....

""

0.8

rz:

'"
g
....

..........

..

......

........

~ 0.5

~

80

r-....

to

..........

60

..........

~

"-

40

.......

0.7

=0.6

5. 0
0
4'_60 -40

I'-..

~ 0.9

a
f5
'"'"ii:

OF~.STAT~ VOLT~GE = 12 V -

............

100

>

""120

4

140

O. -60

-40

-20

0

20

40

60

80

100

120

140

TJ. JUNCTION TEMPERATURE (DCI

TJ. JUNCTION TEMPERATURE (OCI

FIGURE 5 - HOLDING CURRENT

FIGURE 6 - TYPICAL FORWARD VOLTAGE

0

0

0

........

C

e

/

............

0
>=3
z

/

............

~

-.......

or::

1320
z

r--..

9o

:

:i:

-

I

0

............

'"

............

1

10

7'~60 -40

-20

0

20

40

60

80

100

120

140

0

u.2

O.

u.4

TJ. JUNCTION TEMPERATURE (OCI

I

0.8

1.0

1.2

.6

1.4

18

VF. INSTANTANEOUS VOLTAGE (VOLTS I

2.0

•

FIGURE 7 - THERMAL RESPONSE
1.0
'"
~

0.7
0.5

~

0.3

i1i

.....

.... co 0.2
rz: -

;~

ffi ~

i

::Ii

~

tli -

!

rz:

....

-"

..-

'"

0.1

ZOJChl

=ROJC •

rhl

0.01
0.05

"

0.03
0.02

~
0.01
0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20 30
50
1. TIME (mol

100

200 300

MOTOROLA THYRISTOR DEVICE DATA
3-251

500

1k

Zk

3k

5k

10k

MCR265-2
thru
MCR265-10

Thyristors
Silicon Controlled Rectifiers
· .. designed for inverse parallel SCR output devices for solid state relays, welders,
battery chargers, motor controls or applications requiring high surge operation.
• Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
• 550 Amperes Surge Capability
• Blocking Voltage to 800 Volts

SCRs
56 AMPERES RMS
50 thru 800 VOLTS

~

AO

•

G

OK

MAXIMUM RATINGS
Symbol

Rating
Peak Reverse Blocking Voltage, Note 1
MCR265-2
MCR265-3
MCR265-4
MCR265-6
MCR265-8
MCR265-10

Unit
Volts

50
100
200
400
600
800

Forward Current (TC = 70·C)
(All Conduction Angles)
Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave)

Value

VRRM

8.3 ms

Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300 p.s, 120 PPS)
Operating Junction Temperature Range
Storage Temperature Range

IT(RMS)
IT(AV)

55
35

Amps

ITSM

550

Amps

PGM

20

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to + 125

·C

Tstg

-40 to +150

·C

Note 1. VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative voltage. Devices
should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-252

MCR265-2 thru MCR265-10
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance. Junction to Case

RruC

0.9

°CIW

Thermal Resistance. Junction to Ambient

RruA

60

°CIW

Characteristic

ELECTRICAL CHARACTERISTICS (TC

25°C unless otherwise noted.)

=

Characteristic

Symbol

Peak Forward Blocking Voltage
(TJ = 125°C)

Min

Typ

Max

VORM
MCR265-2
MCR265-3
MCR265-4
MCR265-6
MCR265-8
MCR265-10

-

-

-

-

10
2

mA

1.5

1.9

Volts

20
40

50
90

1

1.5

Volts
Volts

50
100
200
400
600
800

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TJ = 25°C
TJ = 125°C

Unit
Volts

IORM.IRRM

-

-

pA

Forward "On" Voltage. Note 1
(lTM = 110A)

VTM

Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc. RL = 100 Ohms)
(TC = -40°C)

IGT

Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc. RL = 100 Ohms)

VGT

-

VGO

0.2

-

-

IH

-

30

75

mA

tgt

-

1.5

-

/LS

dv/dt

-

50

-

V//LS

Gate Non-Trigger Voltage
(Anode Voltage = Rated VORM. RL
Holding Current
(Anode Voltage

=

Turn-On Time
(lTM = 55 A. IGT

=

mA

-

100 Ohms. TJ

=

125°C)

•

12 Vdc)

= 200 mAde)

Critical Rate of Rise of Off-State Voltage
(Gate Open. Rated VORM. Exponential Waveform)
Note 1. Pulse Test: Pulse Width", 300 !,S, Duty Cycle'" 2%.

FIGURE 1 - AVERAGE CURRENT DERATING

125
G 12 1~

~
~11 7~
~,
~ 11 3
=>

g

10 9

'\."\.

::---....

."" "

...........
... 10 5
...........
a5 10 1 r---- " = 300 .'\.
" '\.
...........
.........
~ 97
en
i'\... '\
........
;j 93
'\.
:::;; 89
'\.
"~ 85

..
x

:::;;

,!d'

1

7
3
69

o

60

~1= i--i----I"
~
" = CONDUCTION ANGLE -

...........

"-

FIGURE 2 - MAXIMUM ON·STATE POWER DISSIPATION

" '"

.
.
~

"

'"ffi

de i---

>

"

S
«

iL

I'-..

"

40 80
12
16
20
24
28
32
36
ITIAV). AVERAGE ON·STATE FORWARD CURRENT IAMPSI"

a = 30° /

24

6.0

1800-

//

J// V . . . . V

/~ ~ V
~ V-

o~
5.0
o

40

/

/ 1/ V
~// /
/'

30

12

/

90°

60° /

36

18

/iaoo

J

1= 48
~ 42

0

"

54

a:

...~

'\. '\.

"- 60).. 90°

.

in

10

15

./'

~- r---

~,,~- i----

" = CONDUCTION ANGLE
20

25

30

35

ITIAV). AVERAGE ON·STATE FORWARD CURRENT (AMPS)"

* This device IS rated for use In applicatIOns sublect to high surge conditions

Care
must be taken to Insure proper heat sinking when the deVice IS to be used at high

sustained currents.

.

."

;.

MOTOROLA THYRISTOR DEVICE DATA
3-253

40

MCR265-2 thru MCR265-10
FIGURE 4 - GATE TRIGGER VOLTAGE

FIGURE 3 - GATE TRIGGER CURRENT

3. 0

2. 5

..

2. 0

z

1. 5

!;i

0

~
II:
::>
u

""'-.

"'" ~
.......

'"
C>

~

O. 7

:il

O. 5

Z

04

"

;;t
II:
C>

-

.......

..........

2.0

~
g

1. 5

53

~

1.0

~

0.8

"""-

-

z

0.5

~
40

20

20

40

60

80

100

120

0'~60

140

I
-40

-20

20

40

20

II:

::>

•

~

~

............
1. 0

~
:il

...........
........

.......

O. 7

II:

0
Z

.......

-20

100

120

140

-

0

r--.....

O. 5

O. 3
-60 -40

./

0

53

80

FIGURE 6 - ON-STATE CHARACTERISTICS

0

u
to
Z

9
0

60

TJ. JUNCTION TEMPERATURE 1°C)

FIGURE 5 - HOLDING CURRENT

:z:

-

r-.

o

TJ. JUNCTION TEMPERATURE 1°C)

..Ii!

r- r-..

II:

.............

O. 3
02 5
-60

~

20
40
60
80
TJ. JUNCTION TEMPERATURE 1°C)

100

120

0

140

1.0

2.0

3.0

VTM. INSTANTANEOUS ON-STATE VOLTAGE IVOLTS)

FIGURE 7 - THERMAL RESPONSE

10
~

~

~

07

05

'"

0.3

II:

02

[3

~C

,...... ....

"'~
:il!:::!

...-

',..... ....
,

ffi;;J, 0.\

-

i

I

Z9JCII) = R9JC . rll)

I

:z::il

:: 15 0.07

asin ~ 005

..
~

0.03

""

0.02

't:'

~

0.0 1

0.1

0.2 0.3

0.5

1.0

2.0

3.0

5.0

10

20
I.

3D
50
TIME Imo)

100

200 300

500

lk

2k

3k

5k

10k

I

M"I 111M " . I _ I j• •w~lU:Ulg.f.•iltfttIC:"R.S.italllAJ14~tjll,
MOTOROLA THYRISTOR DEVICE DATA
3-254

MCR506
Series

Plastic Silicon Controlled
Rectifiers
· .. PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.
•
•
•
•

Passivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability.

SCRs
6 AMPERES RMS
50 thru 600 VOLTS

G~
AK

CASE 77-05
(TO-225AA)
STYLE 2

MAXIMUM RATINGS
Rating
Peak Reverse Blocking Voltage, Note 1

MCR506-2
·3
-4
-6
-8

RMS Forward Current (All Conduction Angles)
Average Forward Current (TC

= 93·C)

Peak Non-Repetitive Surge Current (1/2 cycle, 60 Hz, TJ
Circuit Fusing Considerations (TJ

=

-40 to 110·C, t

=

=

-40 to 110·C)

1 to 8.3 ms)

Peak Gate Power

Symbol

Value

Unit

VRRM

50
100
200
400
600

Volts

IT(RMS)

6

Amp

IT(AV)

3.82

Amp

ITSM

40

Amp

12t

2.6

A 2s

PGM

0.5

Watt

PG(AV)

0.1

Watt

Peak Forward Gate Current

IGM

0.2

Amp

Peak Reverse Gate Voltage

VRGM

6

Volts

TJ

-40 to 110

Average Gate Power

Operating Junction Temperature Range
Storage Temperature Range

Tstg

-

Mounting Torque.(Note 2)

-40 to
6

HiO

·C
·C
in. lb.

Notes: 1. Ratings apply for zero or negative gate voltage but positive gate voltage shall not be applied concurrently with a negative potential on the
anode. When checking forward or reverse blocking capability, thyristor devices should not be tested with a constant current source in a
manner that the voltage applied exceeds the rated blocking voltage.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting torque in excess of 6 in. lb. does not
appreciably lower case-to-sink thermal resistance. Anode lead and heat sink contact pad are common. (See AN~90 B)
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed + 225"C. For optimum
results, an activated flux (oxide removing) is recommended.

MOTOROLA THYRISTOR DEVICE DATA
3-255

MCR506 Series
THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R9JC

3

0c/w

Thermal Resistance, Junction to Ambient

R9JA

75

°C/W

ELECTRICAL CHARACTERISTICS (TC

= 25°C unless otherwise noted, RGK =

Peak Forward Blocking Voltage
(TJ = 110°C)

Typ

Min

Max

VORM
MCR506-2
-3
-4
-6
-8

-

-

60
100
200
400
600

Unit
Volts

-

-

Peak Forward Blocking Current
(Rated VORM, TJ = 110°C)

IORM

-

-

200

pA

Peak Reverse Blocking Current
(Rated VRRM, TJ = 110°C)

IRRM

-

-

200

pA

Forward "On" Voltage
(lTM = 12 A Peak)

VTM

-

-

1.9

Volts

-

-

200
500

VGT

-

-

1

Volts

VGO

0.2

-

-

Volts

IH

-

-

5

mA

dv/dt

-

10

-

Gate Trigger Current (Continuous dc)
(VAK = 7 Vdc, RL = 100 ohms)
(VAK = 7 Vdc, RL = 100 ohms, TC

=

Gate Trigger Voltage (Continuous dc)
(VAK = 7 Vdc, RL = 100 ohms, TC

= 25°C)

Gate Non-Trigger Voltage
(VAK = Rated VORM, RL

II

1000 ohms.)

Symbol

Characteristic

Holding Current
(VAK = 7 Vdc, TC

=

-40°C)

100 ohms, TJ

=

110°C)

= 25°C)

Forward Voltage Application Rate
(TJ = 110°C)

FIGURE 1 ~

CURRENT DERATING

FIGURE 2 -

/

I!?

!;(
~
z

i'- .......

/

8.0

/

0

l"- I-.....

~

0-

"-

in

en

25

",

~

0W

......

'"w
:;;:

0::.-

6.0

4.0

V

«
a::

~

2.0
3.0
4.0
5.0
IT(RMS). RMS ON·STATE CURRENT (AMPS)

6.0

a::
0

7.0

V

/

/

...... V

2.0

V

o

. /V

o

1.0

2.0
3.0
4.0
5.0
IT(RMS). RMS ON·STATE CURRENT (AMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-256

V/p,s

POWER DISSIPATION

_ 10.0

i'--

1.0

pA

IGT

6.0

7.0

MCR729-5
thru
MCR729-10

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristor
· .. fast switching, high-voltage Silicon Controlled Rectifiers especially designed for
pulse modulator applications in radar and other similar equipment.
•
•
•
•

High-Voltage: VORM = 300 to 800 Volts
Turn-On Times: in Nanosecond Range
Repetitive Pulse Current to 100 Amps
Stable Switching Characteristics Over an Operating Temperature Range From
- 65 to + 105°C
• Pulse Repetition Rates as High as 10,000 pps

seRs
5 AMPERES RMS
300 thru 800 VOLTS

~

AO

G

oK

CASE 63-03
(TO-64)
STYLE 1

MAXIMUM RATINGS (TJ

=

105°C unless otherwise noted.)
Symbol

Characteristic
Peak Repetitive Forward Blocking Voltage, Note 1
MCR729-5
-6
-7
-8
-9
-10

Value

Unit
Volts

VORM
300
400
500
600
700
800

Peak Repetitive Reverse Blocking Voltage, Note 1
Forward Current RMS
Average Forward Power
Peak Repetitive On-State Control (PW = 10 I's)
Peak Forward Gate Power

VRRM

50

Volts

IT(RMS)

5

Amps

PF(AV)

5

Watts

ITRM

100

Amps
Watts

PGFM

20

PGF(AV)

1

Watt

IGFM

5

Amps

Peak Forward Gate Voltage

VGFM

10

Volts

Peak Reverse Gate Voltage

VGRM

10

Volts

TJ

-65 to + 105

°C

Tstg

-65 to +150

°C

15

in. lb.

Average Forward Gate Power
Peak Forward Gate Current

Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

•

Note 1. Ratings apply for zero or negative gate voltages. Devices shall not have a positive bias to the gate concurrently with a negative potential on
the anode. Devices should not be tested with a constant current source for forward and reverse blocking voltages such that the applied
voltage exceeds the ratings.

..

~;:~.,{'1JI4l1!Id..::~ 'Ii!> 'l',,;."'" .f'!"~~:>'V ""ii~" ""'.~':"1! v;; ·"k'·.L~ .N~~i!·i.<"IIi '''~ ~,>~~~~}Y"Jt'~N" '''<.~, !1!.J''QN...~''t
~;""",.:.WY~~~>jfA;'h .. ·~<'N~.~"":\;ft_AMlrr .. ;'rU,_~?N:~.lI::M1:ii..;.&\o::mwj~~~~!:!4.""'$;i~~~"''''f,.

MOTOROLA THYRISTOR DEVICE DATA
3-257

MCR729-5 thru MCR729-10
ELECTRICAL CHARACTERISTICS (TC

25°C unless otherwise noted.)

=

Symbol

Min

Typ

Max

Unit

IORM,IRRM

-

0.2

2

mA

Gate Trigger Current (Continuous dc)
(Vo = 7 Vdc, RL = 100 ohms)

IGT

-

10

50

mAdc

Gate Trigger Voltage (Continuous dc)
(VO = 7 Vdc, RL = 100 ohms)

VGT

-

0.8

1.5

Volts

IH

3

15

-

mA

Forward On Voltage
(lTM = 5 A, PW,,;; 1 ms, Outy Cycle,,;; 1%)

VTM

-

-

2.6

Volts

Dynamic Forward On Voltage
(0.5 /LS after 50% pt, IG = 200 mA, Vo
VORM, iF(pulse) = 30 Amps)

VTM

-

15

25

Volts

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TC = 105°C

Holding Current
(VO = 7 Vdc, gate open)

= Rated

Turn-On Time (td + t r )
(lG = 200 mA, Vo = Rated VORM)
(iTM = 30 Amps peak)
(iTM = 100 Amps peak)
Turn-On Time Variation
(TC = + 25°C to + 105°C and -65°C to +25°C, ITM
Pulse Turn-Off Time
(iF(pulse) = 30 Amps, Ireverse
(Inductive charging circuit)

= 30 A)

-

200
400

-

ton

-

±500

-

ns

trec

-

15

-

I-'S

dv/dt

50

-

-

V/I-'s

-

-

4

°CIW

= 0)

Forward Voltage Application Rate (Linear Rate of Rise)
(Vo = Rated VORM, gate open, TC = 105°C)

•

ns

ton

Thermal Resistance (Junction to Case)

t1JC

MOTOROLA THYRISTOR DEVICE DATA

3-258

-

MCR171S-5
thru
MCR171S-S

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
· .. fast switching, high-voltage thyristors especially designed for pulse modulator
applications.
•
•
•
•

High-Voltage Capability from 300 to 600 Volts
Repetitive Pulse Current to 1000 Amps
Pulse Repetition as High as 4000 pps
Current Application Rate as High as 1000 A/p,s

SCRs
25 AMPERES RMS
300 thru 600 VOLTS

.~

AO

G

oK

CASE 263-04
STYLE 1

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Forward or Reverse Blocking Voltage, Note 1
MCR1718-5
-6
-7
-8

VDRM
VRRM

Peak Reverse Blocking Voltage (Transient) (Non-Recurrent 5 ms (max))
MCR1718-5
-6
-7
-8

VRSM

Forward Current RMS

Value

Unit
Volts

300
400
500
600
Volts
400
500
600
700

IT(RMS)

25

Amps

Peak Forward Surge Current
(1-10 p,s Pulse Width)

ITSM

1000

Amps

Current Application Rate
(up to 1000 A peak)

di/dt

1000

A/p,s

12t

250

A 2s

PF(AV)

30

Watts
Watts

Circuit Fusing
(TJ = -65 to + 125'C; t .;; 1 ms)
Dynamic Average Power
(TC = 65'C)
Peak Gate Power -

Forward

Average Gate Power Peak Gate Current -

Forward

Forward

PGM

20

PG(AV)

1-

Watt

IGM

5

Amps

Note 1. VORM and VRRM for all types can be applied on a continuous de basis without incurring damage.
Ratings apply for zero or negative gate voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-259

(cont.1

MCR171S-5 thru MCR171S-S
MAXIMUM RATINGS - continued
Rating
Peak Gate Voltage

Symbol

Value

Unit

VGM

10

Volts

TJ

-65 to + 125

'C

Tstg

-65to +150

'C

-

30

in. lb.

Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25'C
TJ = 125'C

•

IORM,IRRM

Forward "On" Voltage
(lTM = 25 Adc)

VTM

Oynamic Forward On Voltage
(lGT = 500 mA, Ipul se = 500 Amps)
(1 IJ,8 after start (10% pt.) of Ipul se )
(5 IJ,8 after start (10% pt.) of Ipul se )

vTM

Gate Trigger Current (Continuous dc)
(VO = 7 Vdc, RL = 50 Ohms)

IGT

Gate Trigger Voltage (Continuous dc)
(Vo = 7 Vdc, RL = 50 Ohms)
(VO = Rated VORM, RL = 50 Ohms, TJ = 125'C)

VGT
VGO

Min

Typ

Max

Unit

-

-

10
8

p.A
mA

1.1

1.3

Volts

-

30
5

-

10

50

-

0.8

1.5

-

-

mA
Volts

0.25

-

-

mA

Holding Current
(VO = 7 Vdc, Gate Open)
(Vo = 7 Vdc, Gate Open, T/= 125'C)

IH

-

15
6

Circuit Com mutated Turn-Off Time
(IF = 500 A, IR = 10 A, dv/dt = 20 V//Ls Vo = Rated VORM,
VR = Rated VRRM)
(Conductive Charging Circuit - Circuit dependent)

tq

-

20

-

/LS

dv/dt

-

100

-

V/IJ,8

5

Critical Exponential Rate of Rise
(Gate Open, TJ = 125'C, Vo = Rated VORM)

-

1.IAlI.4'ft~~JiI~itRllmt:A!£Z.ftll!lJ.'!
MOTOROLA THYRISTOR DEVICE DATA
3-260

MCR1906
Series

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
These devices are glassivated planar construction designed for applications in
control systems and sensing circuits where low-level gating and holding characteristics are necessary.

seRs
1.6 AMPERES RMS
50 thru 400 VOLTS

• Low-Level Gate Characteristics - IGT = 1 mA (Max) @ TC = 25°C
• Low Holding Current - IH = 5 mA (Max) @ TC = 25°C
• Glass-to-Metal Bond for Maximum Hermetic Seal
G

AOC>----1~~:.....-..,o K

CASE 79-04

ITO-205AD)
STYLE 3

MAXIMUM RATINGS (TJ

=

100·C unless otherwise noted.)
Rating

Symbol

Repetitive Peak Reverse Blocking Voltage

Value

VRRM
MCR1906-2
MCR1906-3
MCR1906-4
MCR1906-6
MCR1906-8

Unit
Volts

50
100
200
400
600

RMS On-State Current
(All Conduction Angles)
Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TJ = -40 to +110·C)
Preceded and followed by rated current and voltage
Peak Gate Power

IT(RMS)

1.6

Amp

ITSM

15

Amps

Watt

PGM

0.1

PGF(AV)

0.01

Watt

Peak Gate Current

IGM

0.1

Amp

Peak Gate Voltage

VGM

6

Volts

TJ

-65 to +110

·C

Tstg

-65 to + 150

·C

-

+230

·C

Average Gate Power

Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature
(>1/16" From Case, 10 s max)

•

"'\;;,'
J.,...."-/J..'*'::
"Y\di~,;'!"'i.;~'jL:t.!:':~'f«;.;r.
.(
$./,~.Ji'.··~,.~4$~I~:~~:~l'~~'* .W\o"'.~'~
.........
:i : 70 t----I---__t----t~ ~

!

:

~

~ 60~---I---__t----+_--_+~~~~+_--~.
50t----I---__t----t-----I---~----+_--_t_--~

400~--70.72--~O~A~~O~.6---70.8~--1~.0~~1~.2--~1.~4--~1.6
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

10~0----~0.-1----0~.2--~~~~~~~----~~~O.7
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-262

MCR3818
Series
MCR3918
Series

Silicon Controlled
Rectifier
Reverse Blocking Triode Thyristor
· .. designed for industrial and consumer applications such as power supplies,
battery chargers, temperature, motor, light and welder controls.
•
•
•
•

seRs
25 AMPERES RMS
50 thru 800 VOLTS

Supplied in Either Pressfit or Stud Package
High Surge Current Rating - ITSM = 240 Amps
Low On-State Voltage - 1.2 V (Typ) @ ITM = 20 Amps
Practical Level Triggering and Holding Characteristics - 40 mA (Max)
and 50 mA (Max) @ TC = 25°C

G

A<>O---1~W~-O()OK
MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Forward and Reverse Voltage, Note 1
MCR3818, MCR3918-2
-3
-4
-6
-8
-10

VDRM
or
VRRM

Non-Repetitive Reverse Blocking Voltage
MCR3818, MCR3918-2
-3
-4
-6
-8
-10

VRSM

On-State Current RMS

Value

Unit

50
100
200
400
600
800

(TO-203)
STYLE 1
MCR3818 Series

Volts
75
150
300
500
700
900

IT(RMS)

20

Amps

IT(AV)

13

Amps

12t

235

A 2s

Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz, TJ = -40 to + 100°C)

ITSM

240

Amps

Peak Gate Power
(Maximum Pulse Width

PGM

5

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

Average On-State Current
(TC = 67°C)
Circuit Fusing
(TJ = -40 to

+ 100°C, t

.. 8.3 ms)

=

10/Ls)

Average Gate Power
Peak Forward Gate Current
(Maximum Pulse Width = 10/Ls)

Note 1. VORM for all types can be applied on a continuous dc basis without incurring damage. Ratings
apply for zero or negative gate voltage. These devices should not be tested with a constant current
source for forward or reverse blocking capability such that the voltage applied exceeds the rated
blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-263

,~,,-

Volts

4
~CASE
.

175-03
STYLE 1
MCR3918 Series

•

MCR3818 Series. MCR3918 Series
MAXIMUM RATINGS - continued
Rating
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range

Symbol

Value

Unit

VGM

10

Volts

TJ

-40 to

Tstg

-40 to

Stud Torque

+ 125
+ 150

°c
°c
in. lb.

30

THERMAL CHARACTERISTICS
Characteristic

Typ

Symbol

Thermal Resistance, Junction to Case
Pressfit Package
Stud Package

=

Unit

0c/w
1
1.1

ELECTRICAL CHARACTERISTICS (TC

1.5
1.6

25°C unless otherwise noted.)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25°C
TJ = 100°C

•

Max

R8JC

IORM,IRRM

Gate Trigger Current (Continuous dc)
(VO = 7 Vdc, RL = 1000)
(VO = 7 Vdc, RL = 100 n, TC = -40°C)

IGT

Gate Trigger Voltage (Continuous dc)
(VO = 7 Vdc, gate open)
(VO = 7 Vdc, RL = 100 n, TC = -40°C)
(VO = Rated VORM, RL = 100 n, TJ = 100°C)

VGT

Peak On-State Voltage (Pulse Width
(lTM = 20 A)
(lTM = 41 A)
Holding Current
(VO = 7 Vdc, gate open)
(VO = 7 Vdc, gate open, TC

=

1 ms max, duty cycle.; 1%)

Max

Unit

-

10
5

pA
rnA

-

40
75

-

1.5
2.5

0.2

-

-

1.5
1.7

-

50
90

rnA

Volts

Volts

VTM

IH

=

Min

rnA

-

-40°C)

Typical
Gate Controlled Turn-On Time (td + t r )
(lTM = 20 A, IGT = 40 mAdc, Vo = Rated VORM)

tgt

Circuit Commutated Turn-Off Time
(lTM = 10A,IR = lOA)
(lTM = 10 A, IR = 10 A. TJ = 100°C)
(VO = VORM = rated voltage)
(dv/dt = 30 V/p.s)

tq

1

p.s
p.s

20
30

Critical Rate of Riseof Off-State Voltage
(VO = Rated VORM, Exponential Wave Form, Gate open, TJ

dv/dt

=

50

V/p.s

100°C)

flll.II" n!lI'I!!!n·. . .I~1J1IItIIII Iii IUrrlh
MOTOROLA THYRISTOR DEVICE DATA
3-264

F

.111111

MCR3818 Series. MCR3918 Series
EFFECT OF TEMPERATURE UPON TYPICAL TRIGGER CHARACTERISTICS
FIGURE 2 - GATE TRIGGER VOLTAGE

FIGURE 1 - GATE TRIGGER CURRENT
20
JF.STJE vOJAGE

1

t'--...

10

I-

=

1.0

l



1-'

E'
2.0
-60

-40

-20

0
20
40
60
80
TJ, JUNCTION TEMPERATURE (DC)

100

120

0.3
-60

140

-40

-20

20
40
60
80
100
TJ, JUNCTION TEMPERATURE (DC)

120

140

MAXIMUM ALLOWABLE NON-REPETITIVE SURGE CURRENT
FIGURE 3 - 60 Hz SURGES
240
22 0
~

:;

i'-

200

I

'i"- I'-

5 180
a:
a:

~

~

a:
a:

1----11

o
1.0

2.0

~

30 0

"'~"-

:

"':.-.
:~

<

3.0

5.0

7.0

10

PULSE WIDTH (m,)

NUMBER OF CYCLES

","C?(

i -

-!~fI:rt;~;:;;j'o~-jftiIHt:'f;k~~,1ii~;#~ytlii,j;~;/>'f;;'

MOTOROLA THYRISTOR DEVICE DATA
3-265

MCR3818 Series. MCR3918 Series
FIGURE 6 - EFFECT OF TEMPERATURE ON
TYPICAL HOLDING CURRENT

FIGURE 5 - GATE TRIGGER
CHARACTERISTICS
20

OJF.STJE VOJAGE =

i'- I'---.

110

l

V-

I-

~

~ 7.0
::>

......

u

..... r.......

~ 5.0

§
o

::t:

=" 3.0
2.0
-60

-40

-20

20

40

60

80

100

120

140

TJ, JUNCTION TEMPERATURE IDC)
MAXIMUM ALLOWABLE FORWARD
rr--::==::
GATE VOLTAGE VGM 10 VOLTS
~
0.0001 tttl-I--r----rl--Ir-""""Ti='-Ir---rI--,--~.,..---1
=

0

0.2

1.0

2.0

3.0

4.0

5.0

6.0

7.0

B.O

9.0

10

VG, GATE VOLTAGE IVOLTS)

DERATING AND DISSIPATION FOR RESISTIVE AND INDUCTIVE
LOADS (f = 60 to 400 Hz. SINE WAVE)

•

FIGURE 8 - ON-8TATE POWER DISSIPATION

FIGURE 7 - AVERAGE CURRENT DERATING

,{'

~

'"

'"~

24

\<

w

~

90

c

en

180D

20

/~/

"'I«I-

'"
~

~~

~

90 D

16

:;;

win

~ 701----+----+----+---+---+---~--+_---'~~+_--4

~5 8.0

w~

~
~ 12
",,,-

u

:::>

«
:;;

0=3/~

>'"

~~

:;
«

~

U

4.0

~

I-

2.0

4.0

6.0

8.0

10

12

14

16

18

20

V./. ~

~D

:;; 80 I---+-----'\--~....",d_".......+_''''''+~

~Z

~

4.0

6.0

8.0

MOTOROLA THYRISTOR DEVICE DATA
3-266

-

--L~
0= CONOUCTION ANGLE 10

I

I

I

I

12

14

16

18

ITIAV). AVERAGE ON·STATE CURRENT lAMP)

ITIAV). AVERAGE ON·STATE CURRENT lAMP)

V

(l

~

~

2.0

/'

20

MCR3818 Series. MCR3918 Series
FIGURE 9 - ON-5TATE CHARACTERISTICS
_ 250
~ 200

~

~ 100

~ 70

~ 50
W

~

--

-

:!

TYP\~AL

30

t;:; 20

J-/

Z

//

:;: 10

,/

,,/

/

//

MAXIMUM

~ 7.0
z

5.0

~

2.0

I

~

.t:'

TJ-1000c
- - TJ = 25°C

,

~
z 3.0

I I

1.0
0.25

I

I

1.0

0.5

1.5

3.0

2.5

2.0

3.5

3.75

VT,INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

FIGURE 10 - TYPICAL THERMAL
RESISTANCE OF PLATES
400

'"
5

"

W

200

~ 100

d

~

'"~

W

60 _

'"
z 40
;;;

~

_

'"

1illill!l!!I .01 Nom T"'y
Oia.~ / Heat Sink
=Lc=::J
cp
\.

~

l

Units mounted in center of
thick bright aluminum. Heat

~
~

I"
'I'\..

5.0

7.0

~
~

Intimat~

,

Contact Area

Additional

JHeatSinkPlate

( I!:.
Complete

'ThinChassis

Knurl Contact
Area

Thin..chassis Mounting

10

3.0

Heat Sink Mounting

Rivet

.....,

air. (Heat sink area is twice
:z: 20 f-- area of one side.)

2.0

Nom.

f-

-

.24

square .h..ts of 1I8·inch

1.5

L=1r .01

.501
.505

r-- .inks held vertically in still

1.0

Chamfer

~

~

~

W

a:

FIGURE 11 - MOUNTING DETAILS FOR
PRESSFIT THYRISTORS

The hole edge must be chamfered as shown to prevent shearing
off the knurled edge of the rectifier during press-in. The pressing
force should be applied evenly on the shoulder ring to avoid tilting
or canting of the rectifier case in the hole during the pressing operation. Also, the use of a thermal joint compound will be of considerable aid. The pressing force will vary from 250 to 1000
pounds, depending upon the heat sink material. Recommended
hardnesses are: copper - less than 50 on the Rockwell F scale;
aluminum - less than 65 on the Brinell scale. A heat sink as thin
as lIS" may be used, but the interface thermal resistance will increase in proportion to the reduction of contact area. A thin
chassis requires the addition of a back-up plate .

10

R8SA, THERMAL RESISTANCE (OCIW)

•

•••
1 . . I!I
.. . . .~
•.~.~R...
aMiR.II.I.II.IIIIII.I.11. . . . . . . . . 77
............
MOTOROLA THYRISTOR DEVICE DATA
3-267

MCR3835
Series
MCR3935
Series

Silicon Controlled Rectifier
Reverse Blocking Triode Thyristor
· .. designed for industrial and consumer applications such as power supplies,
battery chargers, temperature, motor, light and welder controls.
•
•
•
•

Economical for a Wide Range of Uses
High Surge Current - ITSM = 350 Amps
Low Forward "On" Voltage - 1.2 V (Typ) @ ITM = 35 Amps
Practical Level Triggering and Holding Characteristics - 10 mA (Typ) @
TC = 25°C
• Rugged Construction in Either Pressfit or Stud Package
• Glass Passivated Junctions for Maximum Reliability

SCRs
35 AMPERES RMS
50 thru 800 VOLTS

MAXIMUM RATINGS

•

Rating

Symbol

Peak Repetitive Forward and Reverse Blocking Voltage
Note 1
MCR3835-2
-8
-10

VDRM
VRRM

Value

Volts
50
600
800

MCR3935-2
-3
-4
-6
-8
-10
Peak Non-Repetitive Reverse Blocking Voltage
(t .; 5 ms)
MCR3835-2
-8
-10

Forward Current RM,S

= -40 to + 125°C)

Circuit Fusing
(TJ = -40 to + 100°C, t

35
700
900
75
150
300
500
700
900
IT(RMS)

35

Amps

ITSM

350

Amps

12t

510

A 2s
Watts

= 1 to 8.3 ms)

Peak Gate Power

PGFM

5

PGF(AV)

0.5

Watt

Peak Forward Gate Current

IGFM

2

Amps

Peak Gate Voltage -

VGFM
VGRM

10
10

Volt

-40 to +125

°C

Average Gate Power

Forward
Reverse

Operating Junction Temperature Range

I

TJ

Note 1. VDRM and VRRM for all types can be applied on a continuous de basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to
the gate concurrently with a negative potential on the anode.

MOTOROLA THYRISTOR DEVICE DATA
3-268

(TO-203)
STYLE 1
MCR3835 Series

STYLE 1
MCR3935 Series

Volts

VRSM

~,,-

P_m~

50
100
200
400
600
800

MCR3935-2
-3
-4
-6
-8
-10

Peak Surge Current
(One Cycle, 60 Hz, TJ

Unit

MCR3835 Series. MCR3935 Series
MAXIMUM RATINGS
Rating

Symbol

Value

Tstg

-40 to +150

·C

-

30

in. lb.

Storage Temperature Range
Stud Torque

Unit

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, Junction to Case
MCR3835
MCR3935

Max

Unit
·CIW

RruC
1.2
1.3

ELECTRICAL CHARACTERISTICS (TC

=

25·C unless otherwise noted.)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25·C
TJ = 100·C

Typ

Min

Max

Unit

1

10
5

rnA

IORM,IRRM

-

-

-

~

Forward "On" Voltage
(lTM = 35 A Peak)

VTM

-

1.2

1.5

Volts

Gate Trigger Current (Continuous dc)
(VO = 7 V, RL = 1000)

IGT

-

10

40

rnA

Gate Trigger Voltage (Continuous dc)
(VO = 7 V, RL = 1000)
(VO = Rated VORM, RL = 100 n, TJ

VGT

-

0.7

1.5

Volts

VGO

0.2

-

IH

-

10

50

rnA

Turn-On Time (td + t r )
(lTM = 35 Adc, IGT = 40 mAdc)

ton

-

1

-

/loS

Turn-Off Time
(lTM = 10 A, IR
(lTM = 10 A, IR

tq

-

20
30

-

-

50

=

100·C)

Holding Current
(VO = 7 V, gate open)

=
=

10 A)
10 A, TJ

=

100·C)

dv/dt

Forward Voltage Application Rate
(VO = Rated VORM, TJ = 100·C)

-

/loS

-

FIGURE 2 - TYPICAL POWER DISSIP.lI.TION

FIGURE 1 - CURRENT DERATING
50

100~~'--'---'---'---'---'---r---r--'---'

de

40
1800

~~
«I~

g:;

60

I

50

----+'....-+---+-----j

I

MCR3935 must be derated an additional--+---t-"...-t----1
10%, i.e., in Figure 1. the max Te of

~V

MC R3835 at 24 Ade is 70 0C. a derating --+---+----f----1
of 30 0C below TJ max. MCR3935 derating would be 33 0C. and TC max 67 0C. --+---+---+------1

40
30
20~

o

~Z

"';::

8.0

12

16

20

24

28

32

36

20

-

>'"

-

:::i
'"

10

I"---..

..,'":::>
ffi

'"'"
~

'"~

= 7V

o

2!

........
........

7.0

5.0

........

w

!;(

I

0.8

o

o.7

I

I
V

............

I"'--...
-.........

f':::

t--....

~ o. 5
!;(

'"~ 3.0

I

............

'"a:

........

I

OFF·STATE VOLTAGE =

>
~
'" 0.6

..........

.........

2.0
·60

~

;

:

1

0.9

r-...

'",.: 0.4
>'"

o. 3

·40

-20

20

40

60

80

100

120

140

·60

·40

20

-20

40

60

80

TJ, JUNCTION TEMPERATURE (DC)

TJ,JUNCTION TEMPERATURE IOC)

•

MOTOROLA THYRISTOR DEVICE DATA
3-270

100

120

140

MGT01000
MGT01200

Gate Turn-Off Thyristors
The GTO is a family of asymmetric gate turn-off thyristors designed primarily for
dc power switching applications such as motor drives, switching power supplies,
inverters, or wherever a need exists for high surge current capabilities and fast
switching speeds.

GTOs
18 AMPERES RMS
1000 and 1200 VOLTS

•
•
•
•
•

Fast Turn-Off With Reverse Gate Pulse
High Voltage - VDRXM = 1000 and 1200 Volts
Momentary Forward Pulse For Turn-On
Minimizes Drive Losses
Interdigitated Emitter Geometry Aids Turn-On Current Spreading and Improves
Turn-On di/dt
• Clip and Current Spreading Ring for Reliable High Surge Capability ITSM = 200 A
ANODE

o

~CA,"~"

CASE 221A-04
(TO-220AB)
STYLE 3

GATE

MAXIMUM RATINGS
Rating
Repetitive Peak Off-State Voltage
(TJ = -40 to + 125°C, 1/2 Sine Wave 50 to 60 Hz) Note 1
Repetitive Peak Reverse Voltage, Gate Open
(TJ = -40 to + 125°C), Note 2
Repetitive Peak Reverse Gate Voltage, Note 3
On-State Current at TC

= 65°C (112 Cycle Sine Wave, 50 to 60 Hz)

Peak Nonrepetitive Surge Current
(8.3 ms Conduction, Half Sine Wave TC
Circuit Fusing (TJ

Symbol

Value

Unit

VDRXM

1000
1200

Volts

VRRM

15

Volts

VGRM

15

Volts

IT(RMS)

18

Amps

ITSM

200

Amps

12t

167

A 2s

ITCM

50

Amps

ITCSM

70

Amps
Watts

•

= 65°C)

= -40 to + 125°C, t = 8.3 ms)

Repetitive Controllable On-State Current, Note 4
Nonrepetitive Maximum Interruptable On-State Current, Note 5
Peak Forward Gate Power
Average Forward Gate Power
Peak Reverse Gate Power
Average Reverse Gate Power

PGFM

10

PGF(AV)

3

Watts

PGRM

400

Watts

5

Watts

PGR(AV)

Operating Junction Temperature Range
Storage Temperature Range

TJ

-40 to

+ 125

°c

Tstg

-40 to

+ 150

°c

n

Notes: 1. VORXM for all types can be applied on a continuous basis without damage. Ratings apply for R ~ 39 or shorted gate conditions or
negative voltage on the gate. Devices should not be tested for blocking voltage such that the supply voltage exceeds the rating of the
device.
2. This is an asymmetric anode shorted part with a blocking gate-cathode junction. The ability to support a reverse voltage depends on the

gate-cathode terminal conditions. Gate-cathode reverse bias increases VRRM.
3. Instantaneous voltage at turn-off may exceed rated VGRM provided PGRM is not exceeded.
4. Vo Maximum Peak ~ VORXM - 300 V, TJ < 125°C, LG ~ 2 ~H, VGR ~ 12 V (See Figure 2)
Cs ~ 0.1 ~F for MGT01000
Cs ~ 0.05 ~F for MGT01200
5. Vo Maximum Peak ~ VORXM - 300 V, TJ < 125°C, LG ~ 2 ~H, VGR ~ 12 V (See Figure 2)
Cs ~ 0.2 ~F for MGT01000
Cs ~ 0.1 ~F for MGT01200

m~~2~~«;;~~l';;~~~~

"MOTOROLA THYRISTOR DEVICE DATA
3-271

i_l_

MGT01000. MGT01200
THERMAL CHARACTERISTICS
Characteristic

Symbol

Value

Unit

Rruc

1

°CIW

RruA

60

°CIW

Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

ELECTRICAL CHARACTERISTICS (TJ

= 25°C unless otherwise noted), Note 1

Characteristic

Symbol

Min

Typ

Max

Unit

5

mA

2.7

3.1

Volts

-

60

300

mA

VGTM

-

0.8

1.5

Volts

IGRM

-

-

5

mA

'L

-

1

-

Adc

'H

-

700

-

mA

-

1.5

-

/Ls

tdi

0.6

-

tri

-

0.9

-

IORM

-

-

VTM

-

Peak Gate Trigger Current
(VO = 12 Vdc, RL = 1.40, Pulse Width;;. 10 p.s)

IGTM

Peak Gate Trigger Voltage
(VO = 12 Vdc, RL = 1.40, Pulse Width;;. 10 p.s)
Reverse Gate Leakage Current
(VGRM = 15 V, TJ = 125°C)

Peak Forward Blocking Current
(VO = Rated VORM, RGK = 390, TJ

=

125°C)

Peak On-State Voltage
(lTM = 50 A, Pulse Width ... 300 p.s, Duty Cycle ... 2%, IGT

Latching Current
(PW = 300 p.s, f

= 60 Hz, Gate Pulse = 1 A, 10 /LS, Vo =

= 300 mAdc)

12 Vdc)

Holding Current
(PW = 300 p.s, f = 60 Hz, Gate Pulse = 1 A, 10 /LS,
Anode Pulse = 6 A, 100 p.s, Vo = 12 Vdc)

SWITCHING CHARACTERISTICS (TJ

=

25°C unless otherwise noted)

RESISTIVE TURN-ON SWITCHING

Gate Turn-On Time

•

Turn-On Delay Time
Rise Time

Vo = 600 V, 'T = 50 A
IG(pk) = 6 A, Cs = 0.1 /LF
dig/dt ;;. 7 AIp.s
See Figure 1 and Table 1(A)

tgt

INDUCTIVE TURN-OFF SWITCHING

Gate Tun-Off Time
Storage Time
Fall Time

VO(pk) = 700 V, 'T = 50 A, VGR
IG(pk) = 6 A
LG = 2 /LH, Cs = 0.1 /LF
See Figure 2 and Table 1(B)

=

-

3

-

2.6

Tfi

-

0.4

-

VO(pk) = 700 V, 'T = 50 A
VGR = 12V
LG = 2 /LH, Cs = 0.1 /LF
See Table l(B)

OGO

-

35

-

17

-

p.C

IGO
ITLP

-

5

-

A

V(pkl = VORM - 400 V
RGK = 390, TJ = 125°C
Linear Waveform

dv/dt

-

10,000

-

V/p.s

12 V

tgq
Tsi

p.s

GATE TURN-OFF CHARGE

Gate Charge
Peak Reverse
Gate Current
Peak Tail Current
STATIC dv/dt

Critical Exponent
of Rise Time

Note 1. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat~sinking is used at

sustained currents (see derating curves).

~;r:.:i1J.::::#3~~:::i~#!!:;'~~l$lltiJj~f~·"~Qim~~'5:J~C8.m.
MOTOROLA THYRISTOR DEVICE DATA
3-272

MGT01000 • MGT01200
TABLE 1 - TERMS, SYMBOLS AND DEFINITIONS FOR SWITCHING WITH GTO'S
NOTE: The parameters are shown on two separate graphs for clarity.

Symbols

Terms

Definitions

RESISTIVE TURN-ON SWITCHING
Turn-On Time

tgt

1::
l!!

5

u

CD

"tI
0

c:


r_++--+_--..30._+_--~+_--_+--___I

65~--1----+--~~~+---~.--4----~~~

~ 771-----+----+_--~--~+_--_P~--+_--_t--~

§ 55~--~---+--~r---~--~~~----+--+~
~

u

....

:::;;

~ 71~--+_--~--~--~--~_+~r_--+_~
65~__~___ L_ _~~_L~_ _~~_L_ _~~~

70A

45~__~__-7~__~__~~~~~~__~~~

0

1.5

95t---_+~r_~~_+~~~~_rT

~89t----+--++-'t---'lr----.....,----f'o.----+----+-----I

~
o 75

.?

12

0

3.0

may require determination of the pulse power, energy, and peak T J rise to
achieve safe turn-off.

FIGURE 6 - HALF WAVE 50-60 Hz POWER DISSIPATION

f!? 30
~

~
o
C5
~

'"~

~:::;;

fi

a..

~

2 12

89

w

'"ffj

83

=> 77

~

21
15

::;:

9.0
6.0

~ 3.0

71
65

a:0

3.0

12
15
6.0
9.0
18
AVERAGE ON·STATE CURRENT IAMPSI

21

24

D

/
180'

60'
V L
V/ /
~

~~

/

a

90'

.....

24

j5

a:

95

I~-

TJlpkl = 125'C

27 -

g'j 18

101

:::;;

.?

24

uated using the pulsed rating curves. Surge operation with high power pulses

FIGURE 5 - CURRENT DERATING 50-60 Hz
RECTANGULAR WAVEFORM

w

20

longest conduction time. Operation at high frequencies should also be eval-

NOTE: Sine wave and rectangular chopper curves allow estimation of heat
sink requirements at low frequencies (50 or 60 Hz) where switching losses
are low compared to conduction losses. Heat sink sizes should be based on
conduction angles that include the worst case peak current as well as the

CI)

6.0
9.0
12
15
18
AVERAGE ON-STATE CURRENT IAMPSI

V
// /

= CONOUCTION ANGLE /
a = 3~'

V

~ // ,/
~/ "/
~~

/.

/"",dc

./'

~ IiiP"
1.5

3.0
4.5
6.0
7.5
9.0
AVERAGE ON-STATE CURRENT IAMPSI

10.5

12

FIGURE 8 - POWER DISSIPATION versus FORWARD CURRENT
RECTANGULAR WAVEFORM

FIGURE 7 - FULL WAVE 50-60 Hz POWER DISSIPATION

~40
~ 35 r---~--~----+----+----~~~--~r---4

z

o ~

~

I-----t---_t----+---

~ 25r_--+---+---+-~~~~---+---+--~

i5

ffi 20 ~---t----t-~~~~~---t----~--~----~

~

w

15

~---t=---"iir7':-r-"~--+----t----~--~----~

~

10

~--+--7.!;yj-#o.......+----+----f--''LU.Ur-!L''"lI------l

~

~ 5.0 t---~7"''-+_--_+----+_­

5.0 I-~_E:.-+---+----+----+-~~--Uf-CL.~

a:-

3.0

15

24

AVERAGE ON-STATE CURRENT IAMPSI

3.0

6.0
9.0
12
15
18
AVERAGE ON-STATE CURRENT IAMPSI

MOTOROLA THYRISTOR DEVICE DATA
3-275

•

MGT01000. MGT01200
FIGURE 9 - FIRING CHARACTERISTICS

FIGURE 10 - NONREPEnnVE SURGE CHARACTERlsncs

le 1000

100

Ie
w

::::>

f.1I outside box for chosen
min TJ and inside the (Y. I)

.........

IZ

a:
a:

~:

Firing circuit loadline must

~

~ c---- _ ~onst,alnts set

........

10

4~

<.>

NG47i- Pr'''

~

71 ""

7C

en
::::>
-<~
0
w
z 1.0 ~O;::;l

-4O'C

~;!z

~
z
~
en

W

o

-

V

..........

12t

50

z

20

g

~

m

0.2
1.0
2.0
VG. INSTANTANEOUS GATE VOLTAGE (VOLTS)

10

FIGURE 11 - MAXIMUM INTERRUPTABLE CURRENT
Cs

ITSM

./

~~

_::'!ic>
-g;

0.1

ITSM
-":":r-.-

100



25'C

-<:a
_Pc>
0.1

!;i
~

300
200

:D

=~~

3!;

10

~~.9
""J
.I"T!~

 0.85

'\.

<.>

ffiloo
80

"'"

~ 60

 0.60

I'

0.55
-40 -20

120

0
20
40
60
80
TJ. JUNCTION TEMPERATURE ('C)

a811B
MOTOROLA THYRISTOR DEVICE DATA

3·276

100

70111111111

120

•

MGT01000. MGT01200
FIGURE 15 - THERMAL RESPONSE
1.0

~

0.7
0.5

!!l

0.3

~

ffi

~~

~~ 0.1
:: ~ 0.07

-

1..--.......

,..

~S 0.2

ROJC'rltl

ZOJCltl

~ ~0.05

~

./

0.03
0.02

~

-E

0.01

0.1

0.2 0.3

0.5

2.0 3.0

1.0

5.0

10

20 30
t, TIME Imsl

FIGURE 16 - TYPICAL LATCHING
CURRENT

r\.

~

Conditions:

~

u

1.0

8

~

::i

15
10

~ 30~ 5.0

~

'"
~ 20~
~

..............

'"

............

o

~

20
40
60
80
TJ, JUNCTION TEMPERATURE lOCI

100

~

i

4.0 _CS
LG
3.5

w

O~

I

10

120

I,

.!

1

3.0

~

f·5

/

~ 2.0
en

31.5
1.0

°

~

0.95
10

~

~

;..--

,..

tsi

~

20

700

a::

=>

400~
3OO~

J

I

I

30
40
50
60
PEAK ANODE CURRENT IAMPSI

FIGURE 19 800

.l

= 0.1 p.F, Vpk = 800 V, TJ = 125 C
= 2.0 p.H, RG = 3 n, VGR = 12 V

!z

500~

It

= 0.1 p.F, Vpk = 800 V, TJ = 125°C- - 200 ~
LG ~ 2.0 p.H, RG = 3 n, VGR = 12 V _ - 1 00

FIGURE 18 - TYPICAL TURN-OFF SWITCHING SPEED

4.5

600~

~

Cs

SP

-40 -20

--

~

~o 10~


2.0 k 3.0 k 5.0 k

en

VO"" 12 V
Gate Pulse Width = 10,....s
Anode Pulse Width = 300 j.LS

" " IL

!'a::5

70

H~ldin9 clrrent

Latchl!9 and

" "'-

if 2.0

1.0 k

500

FIGURE 17 - TYPICAL TURN-OFF DYNAMICS

4.0
3.0

200 300

100

50

I

70

80

•

CONDUCTION ENERGY PER PULSE

l°om"~R
80

50

-- ~

1
30
40
50
60
PEAK ANODE CURRENT IAMPSI

1.0 ~~~~~~.o-LJ...ll.llL-~L..nIlilllL-x..L..nIl.1.lllI
0.001
0.01
0.1
pw, PULSE WIDTH Imsl

70

"\"'""'1,,, "(')'.]'('''4 ,,,',~"""J'W:1W)\',,",,,,A'''J,,! ~/!{,!".~AJV.. ;ifY: .!)~:M:~1ti100 Vo

"-

(INDUCTIVE LOAD)

20

=. 125°C. IGFlpkl = 6.0 A. dlGPdt = 7.0 A/pll
= VORXM - 400 U
I

~
~

V(pkl = 700 V. VGR = 12 V.
LG = 2.0 ~H. RG = 3.0 n
PW 100 ~s. D < 2.0%

:::= f=TJ
MGT01000./

g§

az

/. ~

a

Z

§ 10

MGT01000. 1000M TURN-OFF ENERGY

ENERGY PER PULSE AT TURN-ON

f--

W

-

MGtO 1200

Vo

./

125°C

r-- ~O SNLBB~R
-'i.
V

YV

IT

0.022 ~F

FIGURE 22 -

10
ENERGY IMILLIJOULESI

10
IT. PEAK ANODE CURRENT IAMPSI

100

MGT01200, 1200M, TURN-OFF ENERGY
(INDUCTIVE LOAD)

FIGURE 23 -

V(pkl

~_ 10~L~G§=~2~'OE~~H'JR~G3=@3~.0§n~~~~~~~~~~
PW

100 pll. 0 < 2.0%

~uu

•

./ '/ ~

~

1,/
X

1.0~~§~ii~~~~~~~§!til

~ 0.5
ffi

C

0.1 ~F
0.068 ~F

...-s V

,/.;
V 0.022 ~F

r./

~ ~~

0.Q1 ~F
0.005 ~F

.111'1.

50

~

'l

0.05 ~F_
0.022 ~F

0.01 ~F
C - 0.005 ~F

10

~ 0.2 L-.J.........JL--.J.........J--L.L.iLLJ..lL1L......1_L....J.-7:-L..J....J...L.J
10
IT. PEAK ANODE CURRENT IAMPSI

?(

i-"

NO SNUBBER

<'l'

3.0

:%~

125°C

0.068 ~F

r..Y:~ ~05 ~F+-+-I-+~

NO SNUBBER'/

a:

:::::=: f=TJ

0.1 ~F

125°C

100

MGT01400, 1400M, TURN-OFF ENERGY

Vlpkl = 1100 V. VGR = 12 V
LG = 2.0 ~H. RG = 3.0 n
PW = 100 ~s. D< 2.0%

= 900 V. VIlR = 12 VH-tt--t-t--+-+-+-+-+-t-+1

~~TJ

50

(INDUCTIVE LOAD)

20.-~-r-.-.ro"nn.--r-r--'-~rrTTn

ii>

iF

II

0.2
1.0

0.Q1

'l

1.0

~

0.10 ~F
0.05 ~F

K
T"

If

if
i!;

~F

0.15 ~F

"-

'V./

~

~

~

0.20

'l

~ i?' '\

I-

•
:::J

~

V

100

'T. PEAK ANODE CURRENT IAMPSI

r

ii' P • •', II
MOTOROLA THYRISTOR DEVICE DATA
3-278

100

MK1V115
MK1V125
MK1V135

Plastic Sidac High Voltage
Bilateral Trigger
Plastic Sidac High Voltage Bilateral Trigger High Voltage Triggers
· .. designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low
voltage on-state. Conduction will continue like an SCR until the main terminal
current drops below the holding current. The plastic axial lead package provides
high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are:
•
•
•
•
•
•

High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Line Transient Clippers
Pulse Generators

SIDACs
1 AMPERE RMS
104 thru 135 VOLTS

MT1

o-----tf.J----o

MT2

~
SURMETIC50
PLASTIC AXIAL
STYLE 1

MAXIMUM RATINGS
Rating

Symbol

Repetitive Breakover Voltage

Min

Max

V(BOI
MK1V-115
MKW-125
MKW-135

Off-State Repetitive Voltage

104
110
120

115
125
135

-

±90

Volts

IT(RMSI

1

Amp

ITSM

-

20

Amps

VORM

On-State RMS Current
(All Conduction Angles)
On-State Surge Current (Nonrepetitive)
(60 Hz One Cycle Sine Wave, Peak Value)
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature
(Lead Length", 1/16" from case, 10 s Max)

Unit
Volts

TJ

-40

+125

·C

Tstg

-40

+150

·C
·C

-

-

+230

Symbol

Min

Max

Unit

-

15

.C/W

45

·C/w

•

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ROJC

Thermal Resistance, Junction to Ambient

ROJA

OIIIIII~II.lilla
••
IIIB.:iRIlIIIIIPI:PlIJII.11nr&lIl:II'••IIIIIIIII[••IIIIIIIIIIII.II••••
11
MOTOROLA THYRISTOR DEVICE DATA
3-279

MK1V Series
ELECTRICAL CHARACTERISTICS (TJ

= 25°C unless otherwise noted; both directions.)

Symbol

Min

Typ

Max

Unit

Breakover Current
(60 Hz Sine Wave)

I(BO)

-

-

200

pA

Repetitive Peak Off-State Current
(60 Hz Sine Wave, V = VORM)

IORM

-

-

10

pA

Repetitive Peak On-State Current
(TC = 25°C, Pulse Width = 10 p.s, Repetition Frequency, f = 1 kHz)

ITRM

-

20

-

Amps

Forward "On" Voltage
(lTM = 1 A peak)

VTM

-

1.1

1.5

Volts

IH

-

-

100

mA

RS

0.1

-

-

kG

di/dt

-

50

-

A/p.s

Characteristic

Dynamic Holding Current
(60 Hz Sine Wave, RS = 0.1 ill)
Switching Resistance
Maximum Rate of Change of On-State Current

CURRENT DERATING
FIGURE 1 - MAXIMUM CASE TEMPERATURE

u

~

130

II!
=>

l-

ea:: 120

............

w

C>.

:;;
~
w

~

•

;;::

~
:;;
=>

~=
-1,,~-

I'.....

"- ~

110

u

;e

......

Tj Rated

u

I-

=125°C _

0.2

r-- .......

100
::;; it 80
~.....

'""=
"""

0.4
0.6 0.8
1.0 1.2
1.4 1.6
IT(AV). AVERAGE ON·STATE CURRENT (AMPS)

::;;

a

= 180?-

60
40
20

180°

1.8

2.0

00

0.2

~

I

a::
=>

E O. 4
o

'"=>
~

i
!;

.r

O. 1
0.8

/

0.8

1.0

1.2

1.4

~

1.6

-

Q'

~

/

1.8

2.0

=

V

/
./

Conduction Angle

/"

Tj Rated = 125°C

/"

0

I

a = 180°

-1,,~

5-

if

O. 3

o. 2

-

I I

u

~

-

25°Cf Lf125°C- -

Ii
II! O. 6

0.6

FIGURE 4 - POWER DISSIPAnON
5

o. 8

0.4

IT(AV). AVERAGE ON·STATE CURRENT (AMPS)

1. 0

C>.

Tj Rated = 125°C _

r-......

::;;~

FIGURE 3 - TYPICAL FORWARD VOLTAGE
;;;

a'= Conduction Angle -

=>::;;

a

800

a!~

;;i ~

"-

90

:;;

:: u 140
o=>

...........
100

~=
-1a~-

15iii
~ II! 120

()( = Conduction Angle -

~
e

:;;

FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE

/'

1

/'

/'

/

,/"

1.1
0.9
1.0
1.2
VT. INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

1.3

02

0.4

0.6

0.8

IT(AV). AVERAGE ON·STATE CURRENT (AMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-280

1.0

MK1V Series
THERMAL CHARACTERISTICS
FIGURE 5 - THERMAL RESPONSE
1.0
0.5
..... 6

0.3

~Ppk

=
_~
r- .,-----1

Ppk

LEAD LENGTH = 1/4"

DUTY CYCLE - tplll
PEAK POWER, Ppk, IS peak of an

TIME equivalent square power pulse.

,

~ ~ 0.2 - dTJL = Ppk. R9JL 10 + (1- 01· r(1l + tpl + r(tpl- r(1l11

'"w<-'

- where:
:Z:'" 1 .0. TJl = the increase in junction temperature above the
1-",
t- 0
O.
lead temperature.
~~
r(t) = normalized value of tranSient thermal resistance
0.05 -attime,t,i.e.'
",<
3 - rhl + tp) = normalized value of
'; ~ 0.0
- tran~jent therma' reslstan~
"'w 2_11
tlmetl+tp,~
'" 0.0

=
=

.....

.....

possible to the tie point. The thermal mISS con-

=

~~

neeted to the tie pOInt is normally large enough
so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed
operation once steady-state conditions are achieved.
Usmg the measured value of TL. the junction tern-

.....

.J.....t"ll IIII

0.0 1
0.2

0.5

1.0

I

2.0

. r·~t~~ ~~y b. det~rmi:'d by:

I I II ~J - ~L ~TJLI

10

5.0

I J I IIII
The temperature of the lead should be measu,ed
usu'=! a thermocouple placed on the ad as close IS

1..-- ....

20

50

200

100
t,

=

500

1.0 k

2.0 k

F

~

rr-

J--

I I I II
I

rt=:

I IIII

5.0 k

10 k

20 k

TIME (msl

TYPICAL CHARACTERISTICS
FIGURE 7 - HOLDING CURRENT

FIGURE 6 - BREAKOVER CURRENT
100

250

90

22 5

4"
3 80

200

I-

~

70

:::>

60

~

'-'

4"

.§. 175
I-

ffi 50
:>
0

""
'"

:;'i
~

j

.......... f-"'"

40
30
20
10

..........

Z
!!:' 150

v

100

::t:

5
0

V
-40

'"z
9o

......... ,./

r-- r-

25

o
-60

--

~

B 12 5

-20

0
20
40
60
80
TJ, JUNCTION TEMPERATURE lOCI

100

120

140

0
-60

-40

-20

20

40

60

FIGURE 8 - V-1 CHARACTERISTICS

' ( ' Slope = RS

IORM

') , '" .),'. c·';;'-.

80

TJ, JUNCTION TEMPERATURE (OC)

'>': /;,'.L,:';·i;~8Y(~jfiitJ}t;jkHII~/~//<;,'/;;

MOTOROLA THYRISTOR DEVICE DATA
3-281

100

120

•

140

MK1V240
MK1V260
MK1V270

Plastic Sidac High Voltage
Bilateral Trigger
Plastic Sidac High Voltage Bilateral Trigger High Voltage Triggers
· .. designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low
voltage on-state. Conduction will continue like an SCR until the main terminal
current drops below the holding current. The plastic axial lead package provides
high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are:
•
•
•
•
•

SIDACs
1 AMPERE RMS
240 thru 270 VOLTS

High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators

CASE 267-03
SURMETIC50
PLASTIC AXIAL

•

Polarity denoted by cathode band

MAXIMUM RATINGS
Rating

Symbol

Min

Max

Unit

±lS0

Volts

1

Amp

20

Amps

On-State Current RMS
(TL = 100·C, LL = 3/8",60 Hz Sine Wave
Conduction Angle = lS0·)

IT(RMS)

-

On-State Surge Current (Non repetitive)
(60 Hz One Cycle Sine Wave, Peak Value)

ITSM

-

Off-State Repetitive Voltage

VORM

Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature
(Lead Length;;. 1/16" from Case, 10 s Max)

TJ

-40

+125

·C

Tstg

-40

+150

·C
·C

-

-

+230

Symbol

Min

Max

Unit

R9JL

-

15

.C/W

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Lead
(LL = 3/S")

MOTOROLA THYRISTOR DEVICE DATA
3-282

MK1V240 Series
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; both directions.)
Characteristic

Symbol

Breakover Voltage

Min

Typ

Max

Unit
Volts

V(BO)
MK1V240
MK1V260
MK1V270

220
240
250

-

-

250
270
280

Breakover Current
(60 Hz Sine Wave)

I(BO)

-

-

200

!LA

Repetitive Peak Off-State Current
(60 Hz Sine Wave, V = VDRM)

IDRM

-

-

10

p.A

Forward "On" Voltage
(lTM = 1 A peak)

VTM

-

1.1

1.5

Volts

IH

-

-

100

mA

RS

0.1

-

di/dt

-

50

-

Dynamic Holding Current
(60 Hz Sine Wave, RS = 0.1 kG)
Switching Resistance
Maximum Rate of Change of On-State Current

kG
A/p.s

CURRENT DERATING
FIGURE 1 - MAXIMUM LEAD TEMPERATURE

FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE

u
!?...14O

~

130

...

120

!c
ffi

1.25

in
~

~ 110

l-

~ 100

a: 0.75
'-'

:::J

~

iii

""
:;;
""

90

~

~

;= 80

'"
Z

Q

::::

70

:::J

60

:;;

x

""

:;;

.=-

'\

~

I-

I-I-I--

0.50

Q

c;:;

~ 0.25

E

50
0.2

1.6

1.8

2.0

:: 2.0

~

~
20

5

!c

I--.J'./

01----

./

r-- t- TJ = 125°~f 1f'25 0C

'\

~

51----

I---

:; 0.7
~ 0.5

~

o

Yr.

1.0
2.0
INSTANTANEOUS ON·STATE VOLTAGE (VOLTS)

140

L

'"

L"

./
0.2

3.0

"""0.4

0.6

0.8

IT(AV). AVERAGE ON·STATE CURRENT lAMPS)

3-283

IL

./

a = Conduction Angle
TJ Rated = 125°C

/"

./

I

L

.........

5

0.2

a = 1800

-1,,~

0

z
:!
0.3
z
~O.1

40
60
80
100
120
TA. MAXIMUM AMBIENT TEMPERATURE (OC)

I---

:1.0
:!~

I\.

Assembled on PCB
II = 3/8"

FIGURE 4 - POWER DISSIPATION

...

;;;- 10
~ 7.0
;:- 5.0
z

3.0

-

~
0

:::J

I

Sine Wave
Conduction Angle = 180 0 -

40

FIGURE 3 - TYPICAL ON-STATE VOLTAGE

i

I

1~50C I

TJI =

~ 100

1.0

•

MK1V240 Series
THERMAL CHARACTERISTICS
FIGURE & - THERMAL RESPONSE
1.0
0.5

.... a

ew

:::E.....

a::::;

we
:z:~

~~

~~
iij~

~~
~!;;

E f3
~ a:

f:~
. Ip
(pI

~
....
'"

V

~
C>

~

-,

v

ffi 0.9
>

~

100

...........

9

..........

~ 0.6

.;t.
\

0
20
40
60
80
TJ. JUNCTION TEMPERATURE (DC)

.......

'"z

\

~

-20

.......

a 0.8

'\
-40

...........

15

a:
a:

00

0.8
-60

1.0

I-

:i'""
.i
a:

:>

...........

C>

C>

I

.........

a:

""' '\.

>

........

:::; 1.2

«
:::;;

120 140

0.4
-60

-40

-20

0
20
40
60
80
TJ. JUNCTION TEMPERATURE (DC)

100

120 140

FIGURE 9 -·V-1 CHARACTERISTICS
FIGURE B - PULSE RATING CURVE
500

300
in 200
0:::;;
::. 100

~

~

'-'

.........

.......
TJ - 25°C

50

~ 30

III

0-

j

20

~

~~
-Ilwl-

\
IORM

Non-repetitive

========-~====t===l= I(BOI

No.

I

.......

(t~r ~rrmonal i~+H~~ I~~e EB:061

10

' ( ' Slope = RS

VORM

r--.i'

-"'---

5.0
0.1

1.0

10
tWo PULSE WIDTH (m.)

100

1000

MOTOROLA THYRISTOR DEVICE DATA
3-284

-,

V(BO)

MKP9V120
MKP9V130
MKP9V240
MKP9V260
MKP9V270

Plastic Sidac High Voltage
Bilateral Trigger
Plastic Sidac High Voltage Bilateral Trigger High Voltage Triggers
· .. designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low
voltage on-state. Conduction will continue like an SCR until the main terminal
current drops below the holding current. The plastic axial lead package provides
high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are:
•
•
•
•
•

SIDACs
0.9 AMPERES RMS
120 thru 270 VOLTS

High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators

MT'~MT2

Polarity denoted by cathode band

MAXIMUM RATINGS
Rating
Off-State Repetitive Voltage
On-State Current RMS (TL = 80'C, LL = 3/8",
conduction angle = 180',60 Hz Sine Wave)
On-State Surge Current (Nonrepetitive)
(60 Hz One Cycle Sine Wave, Peak Value)
Operating Junction Temperature Range
Storage Temperature Range
lead Solder Temperature
(Lead Length", 1116" from case, 10 s max)

Symbol

MKP9V120
MKP9V130

VDRM

±90

MKP9V240
MKP9V260
MKP9V270

Unit

±180

Volts

IT(RMS)

0.9

Amp

ITSM

4

Amps

TJ

-40 to +125

'C

Tstg

-40 to +150

'C

-

230

'C

Symbol

Unit

RI1JL

40

•

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Lead
LL = 3/8"

'C/W

!i1~:!i.t~","i4?;~· ii,';ii':ii'ri~~i~;~~rJ'l.ll'.f;;llllj;lfi;"~fI.WJlHJ·{iliJt'~lliJHljRD,w:J;::N5,
MOTOROLA THYRISTOR DEVICE DATA
3-285

MKP9V120 • MKP9V130 • MKP9V240 • MKP9V260 • MKP9V270
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; both directions.)
Symbol

Characteristic
Breakover Voltage

Typ

Min

VBO

Max

Unit
Volts

125
135
250
270
280
5
50

pA.

-

VTH

-

1.3

1.5

Volts

Oynamic Holding Current
(60 Hz Sine Wave)

IH

-

-

100

mA

Switching Resistance

RS

0.1

-

110
120
220
240
250

MKP9V120
MKP9V130
MKP9V240
MKP9V260
MKP9V270
Repetitive Peak Off-State Current
(60 Hz Sine Wave, V = VORM)

IORM
TJ = 125°C

Forward "On" Voltage
(IT = 1 A)

Breakover Current (60 Hz Sine Wave)

IBO

Maximum Rate of Change of On-State
Current

I

•

I

TL"")

.......

to-..

I

j.¥a".j

....... r-...

1

........
........

........

1

1

A/p.s

-

FIGURE 2 - MAXIMUM AMBIENT TEMPERATURE
1.0

I-

ie

.-

"-

~

1'-

~ 0.6

,

TJ = 1~"C
Sine Wave
Conduction Angle = 180"-

u

!;i

t?
z

TJ = 125°C
Sine Wave
Conduction Angle = 180"

~

~ 0.8

j.¥a"+j

,

kO
pA.

-

90
50

-

FIGURE 1 - MAXIMUM LEAD TEMPERATURE

I'..

-

di/dt

MKP9V120, 130
MKP9V240, 260, 270

200

, ,

~

~

f'..

0.4

o

en

.........

:IE
.F
0.2

.........

,

Assembled in PCB Lead Lenglh = ¥a" _

"

.......
.......

.........
0.2

0.4

0.6 0.8
1.0
1.2
1.4 1.6
IT(RMS) ON·STATE CURRENT (AMPS)

t-...
1.8

2.0

20

FIGURE 3 - TYPICAL ON-5TATE VOLTAGE

Ie
:IE

10

1.25

~ 5.0

S

1.00

.............

~
o

a 2.0 r-- -TJ=25+# V125"C

!i

~ 1.0

fi
...

51

~ 0.50

•
II

~ 0.3
~ 0.2

o

140

/

/

/

V
L

V
,.".

-

...... V

!2

..,.....1""

~ 0.25

./

,E

~

~0.1

-

Conduction Angle = 180°C

0.75

is

0.5

TJ = 25"C

~

~ 0.7

;z:

I.

r--

z

r/

I-'

40
60
eo
100
120
TA. MAXIMUM AMBIENT TEMPERATURE (OC)

FIGURE 4 - POWER DISSIPATION

7.0

~
g§ 3.0

-

I-I

./
1.0

2.0

3.0

4.0

Yr, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

5.0

0.2

0.4
0.6
0.8
irIRMS). ON-STATE CURRENT lAMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-286

1.0

MKP9V120. MKP9V130. MKP9V240. MKP9V260. MKP9V270
THERMAL CHARACTERISTICS
FIGURE 5 - THERMAl RESPONSE

...

C 1.0

..

N

:::; 0.1
O.S

--

2

II:
0

~
~

..
z

~
in

~

~

0.3

I-"

0.2
0.1
DOl
O:OS

II:

~ 0.03

t-

...iniE 0.02

,..... ~

d=tTI

Ip

-

~ 0.01
~
0.1

Z8JLII) ~ Z8JL. ril)
_

,.TJL

~

DUTY CYCLE. 0 ~ Ipll!
PEAK POWER, Ppk, "peak alan

Pk

I-I!-I

TIME

equIvalent square power pulse

Ppk. ROJL 10 + 11 - D). rll! + Ip) + ril p) - rilll1

where

f·T Jl = the Increase In Junction temperature above the lead lemperature
r(t) = normalized value of tranSient thermal resistance at time, t, from Ftgure 5. I.•..
r(11 + tpl = normalized value of tranSlenllhermal resistance at tlme,'1 + tp.
1.0

0.5

0.2

S.O

2.0

20

10

50

100

200

SOD

S.Ok

2.0 k

1.0 k

10k

I, TIME 1m,)

TYPICAL CHARACTERISTICS
FIGURE 7 - HOLDING CURRENT

FIGURE 6 - BREAKOVER VOLTAGE
1.4

~

-""""i'o.. .......

./

V"

...~:::;; 1.2
!5
~ 10
!Z.

r-.....
~

.........

"-

"-

w

ex:
ex:

...

i3

0.8

""'-

..........

......
...... t'......

CJ

z

9

I'

~ 0.6
~

0,8
-60 -40 -20

020406080
TJ. JUNCTION TEMPERATURE (OCI

100

120 140

0.4
-60

-40 -20

020406080
TJ. JUNCTION TEMPERATURE (OCI

100

'(" Slope = RS

.....

ie

~

~
I-

I--..

Z

r-

IPI(

w

ex:
ex:

10
:::>
u

......'" 1=~F~

..

:=

~

.......

IORM

VORM

10%

r-\
1.0

120 140

FIGURE 9 - V-I CHARACTERISTICS

FIGURE 8 - PULSE RATING CURVE

w

100

tw

~

1 11111111
0,1

I
10

1.0

tw. PULSE WIDTH (m.1

100

-, ---

'1

MOTOROLA THYRISTOR DEVICE DATA
3-287

V(BOI

•

MMBS5060
MMBS5061
MMBS5062

Silicon Controlled
Rectifiers
MAXIMUM RATINGS
Rating
Forward Current Avg. (TC

= + 67'C)

Peak Forward Gate Voltage
Peak Forward Blocking Voltage
RG = 1 k

Symbol

Value

Unit

IF

510

mA

VGFM

5

V
V

VFXM
MMBS5060
MMBS5061
MMBS5062

SCRs
30 thru 100 VOLTS

30
60
100

THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board."
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate."' TA
Derate above 25'C

= 25'C

Thermal Resistance Junction to Ambient
Junction and Storage Temperature
•

Symbol

Max

Unit

PD

225

mW

1.8

mWI'C

R(jJA

556

'C/mW

PD

300

mW

2.4

mWI'C

ROJA

417

'C/mW

TJ, Tstg

150

'c
CASE 318-02103
STYLE 14

*FR-5 = 1 x 0.75 x 0.62 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ELECTRICAL CHARACTERISTICS (TA

I

=

25'C unless otherwise noted.)
Symbol

Min

MMBS5060 = 30V
Anode Voltage = MMBS5061 = 60V
MMBS5062 = 100 V

VGNT

0.1

-

Peak Forward Blocking Current
(RGC = 1 kO,
TC = 125'C)

MMBS5060 = 30V
VFXM = MMBS5061 = 60V
MMBS5062 = 100 V

IFXM

-

50

p,A

Peak Reverse Blocking Current
(RGC = 1 kO,
TC = 125'C)

MMBS5060 = 30V
VRXM = MMBS5061 = 60V
MMBS5062 = 100 V

IRXM

-

50

p,A

Forward Voltage'
(IF = 1.2 A Peak)

VF

-

1.7

V

Gate Trigger Current**
(RGC = 1 kO, VAC = 7 V, RL = 100 0)

IGT

-

200

p,A

Gate Trigger Voltage
(RGC = 1 kO, VAC = 7 V, RL = 100O)

VGT

-

0.8

V

IH

-

5

mA

Characteristic

Max

Unit

OFF CHARACTERISTICS
Gate Trigger Voltage
(RL = 1000, RGC = 1 kO,
TC = 125'C)

Holding Current
(VAC = 7 V, RGC = 1 kO)

V

*PW :E; 1 ms, D.C. :!SO: 1%.
**RGC current not included in measurement.

~~_IIiIi!:IIilIII;;~IJIi.:laUliai1lJlf»i1l8."'I;;NI"'_
MOTOROLA THYRISTOR DEVICE DATA
3-288

11111

11~1,

MOC3041
MOC3042
MOC3043

6-Pin DIP Optoisolators
Triac Driver Output
These devices consist of gallium arsenide infrared emitting diodes optically coupled to
a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral
triac driver.
They are designed for use with a triac in the interface of logic systems to equipment
powered from 240 Vac lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
•
•
•
•
•
•

•
•

Simplifies Logic Control of 240 Vac Power
Zero Voltage Crossing
High Breakdown Voltage: VDRM = 400 V Min
High Isolation Voltage: VI SO = 7500 V Guaranteed
Small, Economical, 6-Pin DIP Package
dv/dt of 2000 V/p.s Typ, 1000 V/p.s Guaranteed
UL Recognized, File No. E54915
VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDEOll0b,
covering all other standards with equal or less stringent requirements, including
IEC204NDEOl13, VDE0160, VDE0832, VDE0833, etc.
Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details.

6-PIN DIP
OPTOISOLATORS
TRIAC DRIVER OUTPUT
400 VOLTS

%

®

•

•

CASE 730A-02
PLASTIC
STYLE 6

883

COUPLER SCHEMATIC

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

I

I

Rating

Symbol

Value

Unit

VR

6

Volts

INFRARED EMITTING DIODE

Reverse Voltage
Forward Current -

Continuous

Total Power Dissipation @ TA = 25°C
Negligible Power in Output Driver
Derate above 25°C

IF

60

mA

PD

120

mW

1.41

mWrC

~-_n6

2
4

3

OUTPUT DRIVER

Off·State Output Terminal Voltage

VDRM

400

Volts

Peak Repetitive Surge Current
(PW = 100I-'S, 120 pps)

ITSM

1

A

PD

150
1.76

mW
mWrC

VISO

7500

Vac

PD

250
2.94

mW
mWrC

Junction Temperature Range

TJ

-40 to + 100

°c

Ambient Operating Temperature Range

TA

-40 to +85

°c

Storage Temperature Range

Tstg

-40 to +150

°C

Soldering Temperature (10 s)

-

260

°c

Total Power Dissipation @ TA
Derate above 25°C

= 25°C

TOTAL DEVICE

Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, I Second Duration)
Total Power Dissipation @ TA = 25°C
Derate above 25°C

1. ANODE
2. CATHODE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
DO NOT CONNECT
6. MAIN TERMiNAl

(1) Isolation surge voltage, VISQ, is an internal deVice dielectric breakdown rating.
For this test. Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

';,. ";"':-"
,·.>,'·:,JiI'~?;i;'!I;.~-"'It'fr.'\' .,':".'·".'/'1"Jt,;V"'~~~.llf"i®.0'
"~

u

PWin '" 100 ILS
TA = 25°C

\

N

~

""-.

:;;;
a:

e

0, 7

i"--

z

~
-40

o

- 20

20

40

60

80

100

o
10

1

TA. AMBIENT TEMPERATURE lOCI

20

50

PWin. LED TRIGGER PULSE WIDTH IlLS}

Figure 5. Tr,igger Current versus Temperature

Figure 6. LED Current Required to Trigger
versus LED Pulse Width

+400
Vdc

MERCURY
WEmD
RELAY

APPLIED VOLTAGE
WAVEFORM--

."""-

1. The mercury wetted relay provides a high speed repeated pulse to
the D.U,T,
2, 100x scope probes are used, to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
the D.U.T. with a normal LED input current, then removing the
current. The variable RTEST allows the dv/dt to be gradually
increased until the D.U.T. continues to trigger in response to the
applied voltage pulse, even after,the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. TRC is
measured at this point and recorded.

CTEST

PULSE
INPUT

--

Xl00
D,U,T,

SCOPE
PROBE

- - - - - - Vmax = 400 V
252 V

~~---

dvldt

-

- -- - ---

= 0.63 Vmax =

252

TAC

TAC

Figure 7. 'Static dv/dt Test Circuit

MOTOROLA THYRISTOR DEVICE DATA
3-291

MOC3041, MOC3042, MOC3043
VCC

Rin
J..:...-'VII\r+---<~---o

HOT

MOC3041/
30421

3043

240 Vac
330
NEUTRAL

'For highly inductive loads (power factor < 0.5). change this value to
360 ohms.

Typical circuit for use when hot line switching is
required. In this circuit the "hot" side of the line is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
hot line.
Rin is calculated so that IF is equal to the rated 1FT of
the part, 5 mA for the MOC3043, 10 mA for the MOC3042,
or 15 mA for the MOC3041. The 39 ohm resistor and 0.01
JLF capacitor are for snubbing ofthe triac and mayor may
not be necessary depending upon the particular triac and
load used.

Figure 8. Hot-line Switching Application Circuit

r----.--~~--------~--------2--~~
Rl

Dl

Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001; resistors, Rl and R2, are optional 330 ohms.

VCCo---'-j
MOC3041/
30421

3043

SCR
SCR

27*

'For highly inductve loads (power factor < 0.51. change this value to
360 ohms.
Note: This optoisolator should not be used to drive a load directly. It is
intended to be a trigger device only.

D2

R2

•

_.ll~~·~

Figure 9. Inverse-Parallel SCR Driver Circuit

__

Ul~;jj. . . .a.liillllll~:1111

MOTOROLA THYRISTOR DEVICE DATA
3-292

.'i

MOC3061
MOC3062
MOC3063

6-Pin DIP Optoisolators
Triac Driver Output
These devices consist of gallium arsenide infrared emitting diodes optically coupled to
monolithic silicon detectors performing the functions of Zero Voltage Crossing bilateral
triac drivers.
They are designed for use with a triac in the interface of logic systems to equipment
powered from 240 Vac lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
•
•
•
•
•
•
•
•
•

Simplifies Logic Control of 240 Vac Power
Zero Voltage Crossing
High Breakdown Voltage: VDRM = 600 V Min
High Isolation Voltage: VI SO = 7500 V Min
Small, Economical, 6-Pin DIP Package
Same Pin Configuration as MOC3041 Series
UL Recognized, File No. E54915
dv/dt of 1500 V//Ls Typ, 600 V//Ls Guaranteed
VDE approved per standard 0883/6.80 (Certificate number 41853). with additional
approval to DIN IEC3801VDE0806, IEC4351VDE0805, IEC651VDE0860, VDE011 Ob,
covering all other standards with equal or less stringent requirements, including
IEC2041VDE0113, VDE0160, VDE0832, VDE0833, etc.
• Special lead form available (add suffix 'T' to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details.
MAXIMUM RATINGS

6-PIN DIP
OPTOISOLATORS
TRIAC DRIVER OUTPUT
600 VOLTS

%

®

I

Symbol

Rating

Value

Unit

VR

6

Volts

IF

60

mA

PD

120

mW

1.41

mWrC

CASE 730A-02
PLASTIC
STYLE 6

883

COUPLER SCHEMATIC

INFRARED EMITTING DIODE

Reverse Voltage
Forward Current -

Continuous

Total Power Dissipation (0 TA = 25°C
Negligible Power in Output Driver
Derate above 25°C

2

OUTPUT DRIVER

Off-State Output Terminal Voltage

VDRM

600

Volts

Peak Repetitive Surge Current
(PW = 100 p.s, 120 ppsl

ITSM

1

A

PD

150
1.76

mW
mWrC

VI SO

7500

Vac

PD

250
2.94

mW
mWrC

Junction Temperature Range

TJ

-40 to +100

°c

Ambient Operating Temperature Range

TA

-40 to +85

°c

Tstg

-40 to +150

°c

260

°c

Total Power Dissipation
Derate above 25°C

«I

TA

= 25°C

TOTAL DEVICE

Isolation Surge Voltage (11
(Peak ac Voltage, 60 Hz, 1 Second Durationl
Total Power Dissipation (aJ TA = 25°C
Derate above 25°C

Storage Temperature Range

-

Soldering Temperature (10 sl

(11 Isolation surge voltage, VISQ, is an internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common .
.

,.. .::

~,'

i .. '
~

"

MOTOROLA THYRISTOR DEVICE DATA

3-293

1. ANODE
2. CATHODE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL

•

MOC3061. M0C3062. MOC3063
~ 25'C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA

I

I

Characteristic

Min

Symbol

Typ

Max

Unit

INPUT LED
Reverse Leakage Current
(VR ~ 6 V)

IR

-

0.05

100

p.A

Forward Voltage
(IF ~ 30 mAl

VF

-

1.3

1.5

Volts

IORMl

-

60

500

nA

OUTPUT DETECTOR (IF ~ 0)
Leakage with LED Off, Either Direction
(Rated VORM, Note 1)
Critical Rate of Rise of Off-State Voltage (Note 3)

dv/dt

-

1500

600

V/p.s

COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage ~ 3 V, Note 2)
MOC3061
MOC3062
MOC3063

-

-

15
10
5

VTM

-

1.8

3

-

Peak On-State Voltage, Either Direction
(lTM ~ 100 mA, IF ~ Rated'IFT)

Volts

IH

-

100

-

p.A

VINH

-

5

20

Volts

Leakage in Inhibited State
(IF ~ Rated 1FT, Rated VORM, Off State)

IORM2

-

-

500

p.A

~

VISO

-

-

Holding Current, Either Oirection
Inhibit Voltage (MTl-MT2 Voltage above which device will not
trigger.)
(IF ~ Rated 1FT)

•

mA

1FT

Isolation Voltage (f

60 Hz, t

~

1 sec)

7500

Vac(pk)

Notes: 1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max 1FT. Therefore, recommended operating IF lies between max

1FT (15 mA for MOC3061, 10 mA for MOC3062, 5 mA for MOC30631 and absolute max IF (60 mAIo
3. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the

load~driving

thyristor(s) only.

TYPICAL CHARACTERISTICS

+800 j---'OUTPJT PULiE
IF ~ 30 mA
~ +600 r - - f ~ 60Hz
~ +400 f---- TA ~ 25'C
g§ +200
=>

'-'

~
~

-200

/

Z
o -400

~

-600
-800

/
-4

1.5

WID~H - 60' p.s

V

1.4

/

./
./

/

NORMALIZED TO
t-TA ~ 25'C

1.3
c

--

1.2

j;:J

:::; 1.1

t--

~
a::

'"'--

o

~ 0.9

l - t--

t---.

z
"> 0.8

/

-

I-

0.7
06
0.5
-40

2
1
0
1
VTM, ON·STATE VOLTAGE (VOLTS)

-20

o

20
40
60
TA, AMBIENT TEMPERATURE ('CI

80

Figure 2. Inhibit Voltage versus Temperature

Figure 1. On-State Characteristics

MOTOROLA THYRISTOR DEVICE DATA
3-294

100

MOC3061, MOC3062, MOC3063
500

1
>--

1.5

t----

1.4

=0

IF

200

./

~

./

0:
0:

~

100

:::>
u

'"52z

20

~
a:
.9

10

I

""'-

« 1.1
~

"-

~ 0.9

""-,

a:

.9 0.8

./

"""

0.7
0.6
-40

-20

40
20
60
80
TA, AMBIENT TEMPERATURE ('CI

100

-

""- "'-

z

/'

I

IF = RATED 1FT

0

./

<

~

N

50

u

I'\.

1.3

40

40
80
100
20
60
TA, AMBIENT TEMPERATURE I"CI

20

Figure 3. Leakage with LED Off
versus Temperature

Figure 4. IORM2. Leakage in Inhibit State
versus Temperature
25

~DR~ALlZ~D T6 - -

1.5
1.4
~ 1.3
;;j! 1.2

"-

TA

"-

~ 1. 1
o
z
1
~ 0.9

= 25'C

-

>-~
~ 20
:::>
u

-

ffi

- - --

r--....

~

~
o
'::f
o 10
~

i--

0.8
0.7

o
20
40
60
TA, AMBIENT TEMPERATURE I'CI

- 20

-40

II

NORMALIZED TO:
PWin '" 100 ILs

1\
15 \
\
\

 0.8

/

-4

NORMALIZED TO
I-TA = 25°C

1.3

~ 0.9

/

:Z

~

1. 5

WID~H - 80' /LS

-20

o
20
40
60
TA, AMBIENT TEMPERATURE (OC)

80

Figure 2. Inhibit Voltage versus Temperature

MOTOROLA THYRISTOR DEVICE DATA
3-298

'00

MOC3081 • MOC3082 • MOC3083
500

1,5

;;;:

1,4

E

;:: 200

zw

V

a:

!5
u

100

z
8'"

50

g

~

.9

c

~

1,2

~ 1,1

."

a:

o
Z

I

"

''i'

10

r---

.....,
.........

...........

a:

.9 0.8

VDRM ~ 800 V- r--------

I

IF ~ RATED 1FT

~ 0,9

./

20

"-

1,3

/'

'"

~

v

['I..

,

0.7

I

0,6

-40

-20

0
20
40
60
80
TA, AMBIENT TEMPERATURE 1°C)

100

-40

- 20

Figure 3. Leakage with LED Off
versus Temperature

20
40
60
80 100
TA, AMBIENT TEMPERATURE 1°C)

Figure 4. IDRM2. Leakage in Inhibit State
versus Temperature
25

~OR~AlIZkD Tb - r--

1, 5

TA ~ 25°C

1,4

/'I. . . . . .

@ 1.
~ 1.2

!l§

r-

20

:::>
u

~ 15

1\

r- r--

0, 8
0, 7

\

c
~
c 10

1\

~

l""- t-

N'ORMALIZED TO:
PWin :;.100!J.$

1\
\

~

. . . r-....

~O. 9

-40

Z

Eli

t--...

~ 1, 1
o
z
1

-

I-

~
a:

1"'-

o

z

o
20
40
60
TA. AMBIENT TEMPERATURE 1°C)

-20

80

t"-

.!t: o

100

5
10
20
PWin, LED TRIGGER PULSE WIDTH l/ts)

1

Figure 5. Trigger Current versus Temperature

50

100

Figure 6. LED Current Required to Trigger
versus LED Pulse Width

+800
Vdc
10k!}

PULSE
INPUT

MERCURY
WETIED
RELAY

APPLIED VOLTAGE
WAVEFORM--

OVOlrn-- -

1. The mercury wetted relay provides a high speed repeated pulse to
the D.U.T.
2. 100x scope probes are used, to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
the D.U.T, with a normal LED input current, then removing the
current, The variable RTEST allows the dv/dt to be gradually
increased until the D.U.T. continues to trigger in response to the
applied voltage pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D,U.T. stops triggering. TflC is
measured at this point and recorded.

CTEST

D.U,T,

Xl00
SCOPE
PROBE

Vmax

~

BOO V

504 V

~:;.,----

dv/dt = 0,63 Vmax = 504

TAC

--- - ---

TAC

Figure 7. Static dv/dt Test Circuit

MOTOROLA THYRISTOR DEVICE DATA
3-299

•

MOC3081 • MOC3082 • MOC3083

27*
!-=--JV\tv-.---;/:i:.lJ:tlJt!Jh:l~y~;;~<:;';:r~):-:x;/~ifJ9jit~~~:1>fi~~~·"~..~m~R.~~~~"~
MOTOROLA THYRISTOR DEVICE DATA

3-303

MU4891 thru MU4894
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol

Characteristic
Intrinsic Standoff Ratio
(VB2Bl = 10 V), Note 1

MU4892
MU4891, MU4893
MU4894

Interbase Resistance
(VB2Bl = 3 V, IE = 0)

Typ

Max

Unit

-

0.51
0.55
0.74

-

-

0.69
0.82
0.86

4
4

7
7

9.1
12
0.9

%FC

Volts

k ohms

RBB
MU4891, MU4892
MU4893, MU4894
aRBB

0.1

-

Emitter Saturation Voltage
(VB2Bl = 10 V, IE = 50 rnA), Nota 2

VEB1(sat)

-

2.5

4

Modulated Interbase Current
(VB2Bl = 10 V, IE = 50 rnA)

IB2(mod)

10

15

-

rnA

-

5

10

nA

-

0.6
0.6
0.6

5
2
1

Interbase Resistance Temperature Coefficient
(VB2Bl = 3 V, IE = 0, TA = -65°C to + 100°C)

Emitter Reverse Current
(VB2E = 30 V, IBI = 0)

IEB20

Peak Point Emitter Current
(VB2Bl = 25 V)

Valley Point Current
(VB2Bl = 20 V, RB2

Ip
MU4891
MU4892, MU4893
MU4894

/LA

rnA

IV

=

100 Ohms), Note 2
MU4891, MU4B93, MU4894
MU4892

Base-One Peak Pulse Voltage
(Note 3, Figure 3)

•

Min

1)

2
2

4
3

-

3
6

5
8

-

Volts

VOBI
MU4891, MU4892, MU4894
MU4893

Notes:
2. Use pulse techniques: PW = 300 /LS. duty cycle", 2% to avoid internal
heating due to interbase modulation which may result in erroneous
readings.

1. Intrinsic standoff ratio.
Tj,

is defined by equation:
Vp - V(EB1}

3. Base-One Peak Pulse Voltage is measured in circuit of Figure 3. This
specification is used to ensure minimum pulse amplitude for applications in SeR firing circuits and other types of pulse circuits.

Tj

VB2B1
Where

Vp = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
V(EB1} = Emitter to Base·One Junction Diode Drop
(=0.5 V @ 10 /LA)

FIGURE 1- UNIJUNCTION TRANSISTOR
SYMBOL AND NOMENCLATURE

FIGURE 3- VOSI TEST CIRCUIT

FIGURE 2 - STATIC EMITTER
CHARACTERISTICS CURVES

(Typical Relaxation Oscillator)

v,
+20 V

R,
20 kQ

Vp

V,

R"
100 Q

C,
0.2/LF

RBI

20Q

-++.'------:'----'-_1,

F;t":~rs:;r F.f~~;~:&q ~!t
MOTOROLA THYRISTOR DEVICE DATA
3-304

S2800
Series

Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
· .. designed primarily for half-wave ac control applications, such as motor
controls, heating controls and power supplies; or wherever half-wave silicon
gate-controlled, solid-state devices are needed.

seRs
10 AMPERES RMS
50 thru 800 VOLTS

• Glass Passivated Junctions and Center Gate Fire for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts

~

AO

G

OK

~
(TO-220AB)
STYLE 3

MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Reverse Voltage, Note 1
Peak Repetitive Off-State Voltage
F
A
B
D
M
N

50
100
200
400
600
800

Non-Repetitive Peak Reverse Voltage
Non-Repetitive Off-State Voltage

Volts

VRSM
VDSM

S2800

RMS Forward Current
(All Conduction Angles)

TC

Unit
Volts

VRRM
VDRM

S2800

75
125
250
500
700
900

F
A
B
D
M
N
IT(RMS)

10

Amps

ITSM

100

Amps

12t

40

A 2s

PGM

16

Watts

PG(AV)

0.5

Watt

TJ

-40 to +100

°c

Tstg

-40 to +150

°c

= 75°C

= 80°C)
= -65 to + 100°C, t = 1 to 8.3 ms)

Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC
Circuit Fusing Considerations (TJ

Value

Forward Peak Gate Power (t ,,; 10 /Ls)
Forward Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range

Note 1. VORM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode.

MOTOROLA THYRISTOR DEVICE DATA
3-305

•

S2800 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

= 25'C unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM) TC = 25'C
TC = 100'C

IORM,IRRM

10
2

mA

1.7

2

Volts

IGT

-

8

15

mA

Gate Trigger Voltage (Continuous dc)
(Vo = 12 Vdc, RL = 30 Ohms)

VGT

-

0.9

1.5

Volts

Holding Current
(Gate Open, Vo = 12 Vdc, IT = 150 mAl

IH

-

10

20

mA

Gate Controlled Turn-on Time
(Vo = Rated VORM, ITM = 2 A, IGR

tgt

-

1.6

-

/.1.8

tq

-

25

-

/.1.8

dv/dt

-

100

-

V//.1.8

= 80 mAl

in 12

~IDO

'"
~

HALF-WAVE
CURRENT WAVEFORM: A SINUSOIDAL
LOAD: RESISTIVE OR INDUCTIVE

~

I"'.:

...i'll
w

l'-... ["-....

w

....
'"

i'o...

~

80

=>

"

~

'"~

«

/
~

6

f

w

.........

""-

~

::;

......

0

4

~,

>

.........

« 2
;;;
«

I

,. 70

/MAXIMUM

~

...........

0:-

10

/
:/

1

c

I

x

10

ili

............ t'"

..........
IT(AV~

~'
MAXIMUM~

~

I--IT(RIMS)

".

5 90

iZ

f-f--

o

r-.....

!LA

FIGURE 2 - POWER DISSIPATION

FIGURE 1 - CURRENT DERATING

~

-

Gate Trigger Current (Continuous dc)
(VO = 12 Vdc, RL = 30 Ohms)

'"
'"

,.
,.

Unit

VT

o
w

«

Max

Instantaneous On-State Voltage
(lTM = 30 A Peak, Pulse Width .. 1 ms, Duty Cycle .. 2%)

Critical Rate-of-Rise of Off-State Voltage
(VO = Rated VORM, Exponential Rise, TC = 100'C)

j

Typ

-

Circuit Com mutated Turn-Off Time
(VO = VORM, ITM = 2 A, Pulse Width = 50 /.1.8,
dv/dt = 200 V//.I.8, di/dt = 10 Ai/.l.8, TC = 75'C)

•

Min

0

L

:,,-

L

./

+-+-

".

o

"

-

/HALF.WAVE
CURRENT WAVEFORM: A SINUSOIDAL
LOAD: RESISTIVE DR INDUCTIVE
RMS CURRENT

I
I

t--t-AV CURRENT

4

10

IT(AV).IT(RMS). MAXIMUM ON-STATE CURRENT (AMP)

IT(AV).IT(RMSI. ON-sTATE CURRENT (AMPS)

MOTOROLA THYRISTOR DEVICE DATA
3-306

56200
56210
56220

Thyristors
Silicon Controlled Rectifiers

5eries

· .. designed for industrial and consumer applications such as power supplies,
battery chargers, temperature, motor, light and welder controls.
•
•
•
•

Economical for a Wide Range of Uses
High Surge Current - 'TSM = 200 Amps
Low Forward "On" Voltage - 1.2 V (Typ) @ ITM = 20 Amps
Practical Level Triggering and Holding Characteristics - 10 mA (Typ) @
TC = 25°C
• Rugged Construction in Either Pressfit, Stud or Isolated Stud Package
• Glass Passivated Junctions for Maximum Reliability

SCRs
20 AMPERES RMS
100 thru 600 VOLTS

.r'"

AO

G
oK

MAXIMUM RATINGS
Rating

Symbol

Repetitive Peak Off-State Voltage, Note 1
Repetitive Peak Reverse Voltage, Note 1
56200,56210,56220
56200,56210,56220
56200,56210,56220
56200,56210,56220

Value

A
B
D
M

Unit
Volts

VDROM
VRROM

,

100
200
400
600

Non-Repetitive Peak Off-State Voltage, Note 1
Non-Repetitive Peak Reverse Voltage, Note 1
56200,56210,56220
A
56200,56210,56220
B
56200,56210,56220
D
56200, 56210, 56220
M

VDSOM
VDROM

RMS On-State Current
(TC = 75·C)

IT(RMS)

20

Amps

ITSM

200

Amps

12t

170

A 2s

Peak Non-Repetitive Surge Current
(One Full Cycle of surge current at 60 Hz, preceded
and followed by rated current, TC = 75·C)
Circuit Fusing Considerations
(TJ = - 65 to + 100·C, t = 1 to B.3 ms)
Peak Gate Power (10 !JS Max)
Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

Volts
150
250
500
700

PGM

40

Watts

PG(AV)

0.5

Watt

TJ

-65 to + 100

·C

Tst9

-65to +150

·C

-

30

in. lb.

Symbol

Max

Unit

ROJC

1.2
1.4

·c/W

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case 56200
56210,56220

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated blocking
voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-307

s=::s

()

CASE 174-04
(TO-203)
STYLE 1
S6200 SERIES

•
"
ii
CASE 263-04
STYLE 1
S6210 SERIES

"',

~

CASE 311-02
STYLE 1
S6220 SERIES

86200. 86210. 86220 8eries
ELECTRICAL CHARACTERISTICS (TC

= 25'C unless otherwise noted.)

Characteristic

Symbol

Intantaneous Forward Breakover Voltage
(Gate Open, TC = 100'C)
S6200,S6210,S6220
S6200, S6210, S6220
S6200, S6210, S6220
S6200, S6210, S6220
Peak Blocking Current
(Rated VOROM @ TC

Min

Typ

Max

100
200
400
600

A
B
0

M

=

Unit
Volts

V(BO)O

100M
IRROM

-

VT

-

-

-

10
2

,.A
mA

-

-

2.4

Volts

IGT

-

-

15

mA

VGT

-

-

2

Volts

Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open)

IHO

-

-

20

mA

Gate Controlled Turn-On Time
(VO = V(BO)O, IT = 30 A Peak,
IGT = 200 mA. Rise Time = 0.1 ,.s)

tgt

-

2

-

,.s

TC

=

25'C

100'C)

Peak On-State Voltage
(IT = 100 A Peak)
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL

=

30 Ohms)

Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL

=

30 Ohms)

Critical Rate-of-Rise of Off-State Voltage
(VO = V(BO)O, Exponential Voltage Rise, Gate Open, TC
A,O
S6200,S6210,S6220
S6200, S6210, S6220
B
S6200, S6210, S6220
M

dv/dt

=

V/,.s

100'C)

•

MOTOROLA THYRISTOR DEVICE DATA
3-308

10
10
10

100
150
75

-

SC141
SC146

Triacs
Bidirectional Triode Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Triggering Specified in Three Quadrants
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

TRIACs
6 and 10 AMPERES RMS
200 thru 800 VOLTS

CASE 221A-04

(TO-22OAB)
STYLE 4

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Off-State Voltage, Gate Open
B
SC141
D
SC146
M
N
RMS On-State Cu rrent
(TC = SO°C)

200
400
600
SOO
6
10
SO
120
12t

A 2s
26.5
60

SC141
SC146

Peak Gate Power (Pulse Width = 10 its)

PGM

10

PG(AV)

0.5

Watt

Peak Gate Current (Pulse Width = 10 its)

IGM

3.5

Amps

Peak Gate Voltage

VGM

10

Volts

TJ

-40 to + 125

°c

Tstg

-40 to + 125

°c

Operating Junction Temperature Range
Storage Temperature Range

'~,

Amps

ITSM
SC141
SC146

Average Gate Power (TC = +SO°C, t = 8.3 ms)

'1 .

Amps

IT(RMS)

Circuit Fusing Considerations
(t = S.3 ms)

Unit
Volts

VDRM

SC141
SC146

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz)

:" ..• ->:'

Value

.". 't::

MOTOROLA THYRISTOR DEVICE DATA
3-309

Watts

•

SC141 • SC146
THERMAL CHARACTERISTICS
Symbol

Characteristic
Thermal Resistance, Junction to Case

·C/w
2.2
1.5

SC141
SC146

ELECTRICAL CHARACTERISTICS (TC

=

+ 25·C, Either Polarity of MT2 to MT1 Voltage unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TC = 25·C
TC = +100·C
Peak On-State Voltage
(Pulse Width", 1 ms, Duty Cycle'" 2%)
SC141 ITM = 8.5 A Peak
SC1461TM = 14 A Peak

VTM

Critical Rate of Rise of Off-State Voltage
(Vo = Rated VORM, Gate Open-Circuited,
Exponential Waveform

dv/dt

DC Gate Trigger Current (Continuous dc)
(Vo = 12 Vdc, Trigger Mode)
MT2(+), G(+); MT2(-), G(-); RL = 100 Ohms
MT2(+), G(-); RL = 50 Ohms
MT2(+), G(+); MT2(-), G(-); RL = 50 Ohms
MT2(+), G(-); RL = 25 Ohms
DC Gate Trigger Voltage (Continuous dc)
(Vo = 12 Vdc, Trigger Mode)
MT2(+), G(+); MT2(-), G(-); RL = 100 Ohms
MT2(+), G(-); RL = 50 Ohms
MT2(+), G(+); MT2(-), G(-); RL = 50 Ohms
MT2( +), G( -); RL = 25 Ohms
(Vo = Rated VORM; RL = 1000 Ohms)
Holding Current
(VO = 24 Vdc, IT = 0.5 A)
(Pulse Width = 1 ms, Duty Cycle'" 2%)
(Gate Trigger Source = 7 V, 20 Ohms)

Min

Typ

Max

Unit

-

-

10
0.5

/LA
mA

IORM,IRRM

Volts

-

-

-

50

1.83
1.65

-

V//Ls

TC = +100·C

Critical Rate-of-Rise of Com mutating Off-State Voltage (1)
(IT(RMS) = Rated IT(RMS), Vo = Rated VORM,
Gate Open-Circuited
TC = +80·C
SC141 Commutating di/dt = 3.2 Alms
SC146 Com mutating di/dt = 5.4 Alms

•

Unit

Max

RIIJC

dv/dt(c)

V//Ls

4
4

-

mAdc

IGT

-

TC = -40·C
TC = -40·C

-

-

50
50
80
80
Vdc

VGT

TC
TC
All
TC

= -40·C
= -40·C

Polarities
= +100·C

-

-

-

-

2.5
2.5
3.5
3.5

0.2

-

mAdc

IH

-

TC = +25·C
TC = -40·C

Latching Current
(VO = 24 Vdc)
(Gate Trigger Source = 15 V, 100 Ohms, Trigger Mode)
MT2(+), G(+); MT2(-), G(-)
MT2(+), G(-)
MT2(+), G(+); MT2(-), G(-)
TC = -40·C
MT2(+), G(-)
TC = -40·C

50
100
mAdc

IL

MOTOROLA THYRISTOR DEVICE DATA
3-310

-

-

-

100
200
200
400

SC141 • SC146
FIGURE 1 - RMS CURRENT DERATING

~ 100

...


S

96

'\. "I\.

~

ill

~

92

'\

5

...
~

~

88

'",.

..,.x

84

80

o

~ 100
~

z
0
50
;::

/L

;t lo

"
'\. " "~t
1'\.

j
..
=>

,.JT060 IHz-

........

FIGURE 2 - POWER DISSIPATION

~

"

lii

SC141
STEAOY STATE
RMS LIMIT f-

C 20


..

.

'"

'>

0::-

1

0.5 0.7

'/
SCI46
STEADY STATE
RMSL1M1T

~

"=>
"x

:/

b
1

"

1. TJ' IODDC
2. CONOUCTION ANGLE -l600
l. CURRENT WAVEFORM IS
SINUSOIDAL

10
20
IT(RMSI.RMSoN-STATE CURRENT (AMP)

lO

50

•

MOTOROLA THYRISTOR DEVICE DATA
3-311

SC250
SC250( )3
SC251

Triacs
Bidirectional Triode Thyristors
· .. designed primarily for industrial and military applications for the control of
ac loads in applications such as light dimmers, power supplies, heating controls,
motor controls, welding equipment and power switching systems; or wherever
full-wave, silicon gate controlled solid-state devices are needed.

TRIACs
15 AMPERES RMS
200 thru 600 VOLTS

• All Diffused and Glass Passivated Junctions for Greater Stability
• Pressfit, Stud and Isolated Stud Packages
• Gate Triggering Guaranteed In All 3 Quadrants

MAXIMUM RATINGS
Rating

Symbol

Repetitive Peak Off-State Voltage
SC251B,SC250B.SC250B3
SC251D,SC250D,SC250D3
SC251 M, SC250M, SC250M3
SC251 N, SC250N

200
400
600
800

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz)

15

Amps

ITSM

100

Amps
A 2s

20
41.5

Peak Gate Power
Average Gate Power

=

10 ,..s)

Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

~
r(

CASE"....

IT(RMS)

12t

Circuit Fusing Considerations
t = 1 ms
t = 8.3 ms

Peak Gate Power (Pulse Width

Unit
Volts

VDRM

RMS On-State Current

•

Value

PGM

10

Watts

PG(AV)

0.5

Watt

IGM

2

Amps

TJ

-40 to +115

°C

Tstg

-40 to +125

°C

-

30

in. lb.

(TO-203)
STYLE 3

SC251
PRESS FIT

?J
':'\

;

.

CASE 175-03
STYLE 3
SC250
STUD

THERMAL CHARACTERISTICS
Symbol

Characteristic
Thermal Resistance. Junction to Case
SC250. SC251
SC250( )3

Max

Unit

°CIW

ROJC
2
2.3

CASE 235-03
STYLE 2
SC250( )3
ISOLATED STUD

I

!!N:~ua~lW~~~~~J:~~

I

MOTOROLA THYRISTOR DEVICE DATA
3-312

SC250 • SC250(

)3. SC251

ELECTRICAL CHARACTERISTICS (TC = + 25'C unless otherwise noted. Values apply for either polarity of Main Terminal 2
Characteristics referenced to Main Terminal 1.)
Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TC = 25'C
TC= +115'C

Min

Typ

IORM,IRRM

.

-

Max

Unit

-

10
0.5

mA

1.65

Volts

Peak On-State Voltage
(ITM = 21 A. Pulse Width = 1 ms, Duty Cycle ,s; 2%)

VTM

-

-

Critical Rate of Rise of Off-State Voltage
(Rated VORM, Gate Open-Circuited,
Exponential Waveform)

dv/dt

100

-

DC Gate Trigger Current (Continuous dc)
(Vo = 12 Vdc, TC = -40'C)
MT2( +), G( +); MT2( -), G( -); RL = 50 Ohms
MT2( +), G( -); RL = 25 Ohms

IGT

DC Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc)
MT2(+), G(+); MT2(-), G(-); RL = 100 Ohms
MT2( +), G( -); RL = 50 Ohms

VGT

DC Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, TC = -40'C)
MT2( +), G( +); MT2( -), G( -); RL = 50 Ohms
MT2( +), G( -); RL = 25 Ohms

VGT

DC Gate Non-Trigger Voltage
(VO = Rated VORM, RL = lK Ohms, TC = 115'C)
All Trigger Modes

VGO

Holding Current
(VO = 24 Vdc, Peak Initiating Current = 0.5 A,
Pulse Width = 0.1 to 10 ms, Gate Trigger)
(Source = 7 V, 20 Ohms)

~

.......

~

"

50
50
mAde

-

SO
SO

-

Vdc

-

-

2.5
2.5

-

Vdc

-

-

-

-

3.5
3.5

0.20

-

-

mAdc

-

TC = +25'C
TC = -40'C

-

50
100
mAdc

IL

-

-

100
200

FIGURE 2 - MAXIMUM ON-STATE POWER DISSIPATION
20

V
./

/'

ESSFIT 8 STUD

/

~

12

.........

"

Vdc

IH

W~VE SIN~

5
4

-

WAVE
°rERATION

ISOLATED STUD ' "

5

mAde

-

fiGURE 1 - CURRENT DERATING

5

-

-

Latch i ng Cu rrent
(VO = 24 Vdc, Gate Trigger Source = 15 V, 100 Ohms,
Pulse Width = 50 p.s, 5 p.s Maximum Rise and Fall Times)
MT2( +), G( +); MT2( -), G( -); MT2( +), G( -)
TC = 25'C
MT2( +), G( +); MT2( -), G( -); MT2( +), G( -)
TC = -40'C

5

V//Ls

4
4
IGT

~~
.........;

V/p.s

dv/dt(c)

DC Gate Trigger Current (Continuous dc)
(VO = 12 Vdc)
MT2(+), G(+); MT2(-), G(-); RL = 100 Ohms
MT2(+). G(-); RL = 50 Ohms

FUll

-

TC = +115'C

Critical Rate-of-Rise of Com mutating Off-State Voltage, Note 1
(IT(RMS) = Rated RMS On-State Current, Vo = VORM)
(Gate Open-Circuited, Commutating di/dt = S Aims)
SC250, SC251
TC = +S4'C
SC250( )3
TC = +7S'C

51"'"

p.A.

~

....

4

S 0 ./
16

:-

./

./

V

'"

TJ "" ]115 0C

FULL~AVE

SINE WAVE
OPERjTlON

12

0

'1IRMS), RMS ON-STATE CURRENT (AM"

'lIRMS), RMS AVERAGE ON-STATE CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-313

r-r-c-16

•

SC260
SC260( )3
SC261

Triacs
Bidirectional Triode Thyristors
· .. designed primarily for industrial and military applications for the control of ac
loads in applications such as light dimmers, power supplies, heating controls,
motor controls, welding equipment and power switching systems; or wherever
full-wave, silicon gate controlled solid-state devices are needed.
• All Diffused and Glass Passivated Junctions for Greater Stability
• Pressfit, Stud and Isolated Stud Packages
• Gate Triggering Guaranteed In All 3 Quadrants

TRIACs
25 AMPERES RMS
200 thru 600 VOLTS

MAXIMUM RATINGS
Rating

Symbol

Repetitive Peak Off-State Voltage
(TC = -40°C to +115°C)
SC260B,SC260B3,SC261B
SC260D,SC260D3,SC261D
SC260M, SC260M3, SC261 M

Peak Non-Repetitive Surge Current
(One Cycle, 60 Hz)

IT(RMS)

25

Amps

ITSM

250

Amps

12t

Circuit Fusing Considerations
t = 1 ms
t = 8.3 ms
Peak Gate Power (Pulse Width

Unit
Volts

200
400
600

RMS On-State Current

•

Value

VDRM

A 2s
150
260

=

10 ILS)

10

Watts

0.5

Watt

IGM

2

Amps

TJ

-40 to +115

°C

Tstg

-40 to +125

°C

-

30

in. lb.

Max

Unit

PGM

Average Gate Power

PG(AV)

Peak Gate Power
Operating Junction Temperature Range
Storage Temperature Range
Stud Torque

THERMAL CHARACTERISTICS
Symbol

Characteristic
Thermal Resistance, Junction to Case

STYLE 2
SC260

# ~E31.a
STYLE 2
SC261

I
'I,}

,

',

D

CASE 311-02
STYLE 2

SC260(

)3

°CIW

RIIJC
SC260, SC261
SC260( )3

A .........
tp!

1.8
1.95

'1~11'~;Jt~~·~
·d'¥.~L·~'~-!''''P'"''fti,rp~t'~~~:'''~I''tIi*LEi~~~
~rtr~'~r,;~'N .~:f;~,,:r. .~-:.~~iU'7~.~-~)~,J~~i~r,l:~W;:'@iJ~-~

MOTOROLA THYRISTOR DEVICE DATA
3-314

I

SC260 • SC260(

)3. SC261

ELECTRICAL CHARACTERISTICS (TC ~ + 25°C unless otherwise noted. Values apply for either polarity of Main Terminal 2
Characteristics referenced to Main Terminal 1.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TC

~

TC~

Peak On-State Voltage
(lTM ~ 35 A Peak, Pulse Width

~

Min

Typ

Max

Unit

-

10
1

pA
mA

VTM

-

1.58

Volts

dvldt

50

-

-

VIILS

dv/dt(e)

5

-

-

VIILS

IORM,IRRM
25°C
+115°C

1 ms, Duty Cycle,,; 2%)

Critical Rate of Rise of Off-State Voltage
(Rated VORM, Gate Open-Circuited,
Exponential Waveform)

TC

Critical Rate-of-Rise of Commutating Off-State Voltage
(IT(RMS) ~ Rated RMS On-State Current)
(VORM ~ Rated Peak Off-State Voltage,
Gate Open-Circuited, Com mutating dildt ~ 13.5 Alms)

~

+115°C

TC

~

+80°C

DC Gate Trigger Current (Continuous de)
(VO ~ 12 Vdc)
MT2(+), G(+); MT2(-), G(-); RL ~ 100 Ohms
MT2( +), G( -); RL ~ 50 Ohms

-

DC Gate Trigger Current (Continuous de)
(VO ~ 12 Vdc)
MT2(+), G(+); MT2(-), G(-); RL ~ 50 Ohms
MT2( +), G( -); RL ~ 25 Ohms

DC Gate Trigger Voltage (Continuous dc)
(VO ~ 12 Vdc)
MT2(+), G(+); MT2(-), G(-); RL ~ 50 Ohms
MT2( +), G( -); RL ~ 25 Ohms

~

VGT

~

VGO
TC

~

~ 105

~

1!l
...

~

'~

95

'"m
~

..~

85

15
0

-

2.5
2.5

Vdc

-

3.5
3.5

0.25

-

-

Vde

mAdc

-

-

75
100
mAde

IL

-

25°C
25°C
-40°C
-40°C

-

100
200
200
400

-

-

FIGURE 2 - MAXIMUM ONoSTATE POWER DISSIPATION
;;;28
~
~ 24

./

./

z
o

sLo-

~ 20

./

~1 6
'"'" 2
~ 1
'"
'"~
>

~

'" "

10
15
20
ITIRMSI. RIIS ON-STATE CURRENT IAIIP)

-

TC ~ +25°C
TC ~ -40°C

~,

~ t'....
ISO,TED SIUD

~

'")(
:li
...u

.PREssmIANO

80
80

IH

FULlWAVE
SINEWAVE OPERATION

~~

-

115°C

FIGURE 1 - CURRENT DERATING

...

-

Vdc

-40°C

Latching Current
(VO ~ 24 Vdc, Gate Trigger Source ~ 15 V, 100 Ohms,
Pulse Width ~ 50 ILs, 5 ILS Maximum Rise and Fall Times)
MT2(+), G(+); MT2(-), G(-)
TC ~
MT2(+), G(-)
TC ~
MT2(+), G(+); MT2(-), G(-)
TC ~
MT2(+), G(-)
TC ~

,

mAde

-40°C

-

Holding Current
(Vo ~ 24 Vdc, Peak Initiating Current ~ 0.5 A,
Pulse Width ~ 0.1 to 10 ms, Gate Trigger
Source ~ 7 V, 20 Ohms)

'"=>'"

50
50

VGT
TC

DC Gate Non-Trigger Voltage
(VO ~ Rated VORM, RL ~ 1K Ohms,
All Trigger Modes)

........ 100.

-

IGT
TC

DC Gate Trigger Voltage (Continuous de) (Vo ~ 12 Vdc)
MT2(+), G(+); MT2(-), G(-); RL ~ 100 Ohms
MT2( +), G( -); RL ~ 50 Ohms

~115

mAdc

IGT

25

./

Ti~ 115°C -

I

/

B

". •

J

./

V

I'"

;,~~L:"~~E _

V

DPERATlON-

V

0 .........

5

W

"

ITIRMSI. RMS ON-STATE CURRENT lAMP)

MOTOROLA THYRISTOR DEVICE DATA
3-315

28

25

T2322
T2323

Sensitive Gate Triacs

Series

Silicon Bidirectional Triode Thyristors
• .• designed primarily for ac power switching. The gate sensitivity of these triacs
permits the use of economical transistorized or integrated circuit control circuits.
and it enhances their use in low-power phase control and load-switching
applications.
•
•
•
•

SENSITIVE GATE TRIACs
2.5 AMPERES RMS
200 thru 600 VOLTS

Very High Gate Sensitivity
Low On-State Voltage at High Current Levels
Glass-Passivated Chip for Stability
Small. Rugged Thermopad Construction for Low Thermal Resistance. High Heat
Dissipation and Durability

~G

MT20

OMTt

,~

MT~
MT1

•

MAXIMUM RATINGS (Apply for TJ

CASE 77·05
(TO·225AA)
STYLE 5

-40 to 100°C unless otherwise noted.)

=

Rating

Suffix

Symbol

Value

Unit

B

VORM

200
400
600

Volts

RMS On·State Current (TC = 70°C)
(Full·cycle sine wave 50 to 60 Hz)

IT(RMS)

2.5

Amps

Peak Non·Repetitive Surge Current
(One Full Cycle. 60 Hz)

ITSM

25

Amps

12t

2.6

A 2s

PGM

10

Watts

PG(AV)

0.15

Watt

IGM

0.5

Amp

TJ

-40 to +110

°c

Tstg

-40 to +150

°c

8

in. lb.

Peak Repetitive Off·State Voltage, Note 1
T2322. T2323

0
M

Circuit Fusing
(t = 8.3 ms)
Peak Gate Power (1 /Ls)

= 60°C

Average Gate Power (TC

+ 38.3 ms)

Peak Gate Current (1 /Ls)
Operating Junction Temperature Range
Storage Temperature Range

-

Mounting Torque (6·32 Screw). Note 2

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that
the voltage applied exceeds the rated blocking voltage.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not
appreciably lower case-ta-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed

+ 200°C, for 10 seconds.

Consult factory for lead bending options.

~£U'&iMi.1:tJi£..iEt.iIi':c:::;;r:r~·~".ilrAkf'''j.,4·nV'i!t~'';';~;i!:.r,:\%'''VhW'~~;;~C?''?~~·
M'tr'.J.
~~f4Kr.·~r> "'WrA'W~ ~~>f, ..:..,1-t-4" " .... :"'.r.~~ ,,1,1¢ ~m~~d.Jr:l""~<».at ~.~~:IW>4.-.~ .f ar..:"~ ., ~r<,~k-n~~~
.

.

MOTOROLA THYRISTOR DEVICE DATA
3-316

I

T2322 • T2323 Series
THERMAL CHARACTERISTICS
Symbol

Max

Unit

Thermal Resistance, Junction to Case

R8JC

3.5

'CIW

Thermal Resistance, Junction to Ambient

R8JA

60

'CIW

Characteristic

ELECTRICAL CHARACTERISTICS (TC

=

25'C and either polarity of MT2 to MTl voltage unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25'C
TJ = 100'C
Peak On-State Voltage
(lTM = lOA)

Min

IORM,IRRM

Typ

Max

Unit

-

mA

-

0.2

10
0.75

-

1.7
1.7

2.6
2.2

IGT

-

-

10
25
40

Gate Trigger Voltage (Continuous dc)
(VO = 12 Vdc, RL = 300, TC = 25'C)
(VO = VOROM, RL = 1250, TC = 100'C)

VGT

!LA
Volts

VTM
T2323 Series
T2322 Series

Gate Trigger Current (Continuous dc) (All Modes)
(VO = 12 V, RL = 30 0)
T2322 Series
MT2( +), G( +); MT2( -), G( -) T2323 Series
MT2(+), G(-); MT2(-), G(+) T2323 Series

Holding Current
(VO = 12 V, ITM

.

mA

-

-

-

Volts

-

1

2.2

-

-

IH

-

15

30

mA

tgt

-

1.8

2.5

ILs

dvldt

10

100

-

VIILs

dv/dt(c)

1

4

-

VIILS

0.15

= 150 mA, Gate Open)

Gate-Controlled Turn-On Time
(VD = Rated VORM, ITM = 10 A pk, IG

= 60 mAl

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM, Exponential Waveform, TC

= 100'C)

Critical Rate of Rise of Commutation Voltage
(VO = Rated VORM, ITM = 3.5 A pk, Commutating
dUdt = 1.8 Aims, Gate Unenergized, TC = 90'C)

MOTOROLA THYRISTOR DEVICE DATA
3-317

•

T2500
Series

Triacs
Silicon Bidirectional Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

•

TRIACs
6 AMPERES RMS
200 thru 800 VOLTS

MT20~MTl

CASE 221A-04
(TO-22OAB)
STYLE 4

MAXIMUM RATINGS
Rating

Symbol

Repetitive Peak Off-State Voltage, Note 1
(TJ = -40 to +100·C) Gate Open
T2500

On-State Current RMS
(Full Cycle Sine Wave 50 to 60 Hz)

(TC

=

+BO·C)

Circuit Fusing Considerations
(TJ = -40 to +100·C, t = 1.25 to 10 ms)

=

Unit
Volts

200
400
600
800

B
D
M
N

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80·C)

Peak Gate Power
(TC = +80·C, Pulse Width

Value

VDROM

IT(RMS)

6

Amps

ITSM

60

Amps

12t

18

A 2s

PGM

16

Watts

PG(AV)

0.2

Watt

IGTM

4

Amps

TJ

-40 to +100

·C

Tstg

-40 to +150

·C

1 p.s)

Average Gate Power
(TC = +80·C, t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width

=

10 /Ls)

Operating Junction Temperature Range
Storage Temperature Range

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that
the voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA

3-318

T2500 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 100°C

Max

Unit

IORM,IRRM

-

-

2

mA

VTM

-

-

2

Volts

Maximum On-State Voltage (Either Oirection)
(IT = 30 A Peak)
Gate Trigger Current (Continuous de)
(VO = 12 Vdc, Rl = 12 Ohms)
VMT2(+), VG(+)
VMT2(+), VG(-)
VMT2( -), VG( -)
VMT2( -), VG( +)

IGT

Gate Trigger Voltage (Continuous de) (All Quadrants)
(Vo = 12 Vdc, Rl = 12 Ohms)
(VO = VOROM, Rl = 125 Ohms, TC = 100°C)

VGT

Min

Typ

mA

-

10
20
15
30

25
60
25
60

-

1.25

2.5

0.2

-

-

15

30

mA

Volts

Holding Current (Either Oirection)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 150 mA, TC = 25°C)

IHO

-

Gate Controlled Turn-On Time
(Rated VOROM, IT = 10 A, IGT

tgt

-

1.6

-

j.£S

dv/dt(c)

-

10

-

V/j.£s

= 160 mA, Rise Time = 0.1 j.£s)

Critical Rate of Rise of Commutation Voltage
(Rated VOROM, IT(RMS) = 6 A. Com mutating di/dt
Gate Unenergized, TC = 80°C)

= 3.2 Alms,

Critical Rate of Rise of Off-State Voltage
(Rated VOROM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
T2500B
T25000,M,N

V/j.£s

dv/dt

-

100
75

-

•

QUADRANT DEFINITIONS
MT2(+1
QUADRANT II

QUADRANT I

MT2(+). G(-)

MT2(+). G(+)

ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
G(-I-------I-------G(+I
QUADRANT IV

QUADRANT III

MT2(-). G(+)

MT2(-). G(-)

General

USAGE
PART NUMBER

MBS4991

MBS4992

Vs

6.0 - 10 V

7.5 - 9.0 V

IS

350IJ.A Max

120 IJ.A Max

VSl - VS2

0.5 V Max

0.2,v Max

Temperature
Coefficient

0.02%l oC Typ

MT2(-)
See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.

~;:~%~1;l~l~~*'! _
MOTOROLA THYRISTOR DEVICE DATA
3-319

_ EI.,.

T2500FP
Series

Silicon Bidirectional
Triode Thyristors
· .. designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon gate
controlled solid-state devices are needed. Triac type thyristors switch from a blocking to
a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.

ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200-800 VOLTS

• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability

MAXIMUM RATINGS
Symbol

Rating

•

Repetitive Peak Off-State Voltage, Note 1
(TJ = -40 to + 100°C) Gate Open

Value

T2500BFP
T25000FP
T2500MFP
T2500NFP

Unit
Volts

VOROM
200
400
600
BOO

On-State RMS Current (TC = +BO°C). Note 2
Full Cycle Sine Wave 50 to 60 Hz
Peak Nonrepetitive Surge Current
(One Full Cycle, 60 Hz, TC = + 80°C)
Circuit Fusing Considerations
(TJ = -40 to + 100°C, t = 1.25 to 10 ms)
Peak Gate Power
(TC = +80°C, Pulse Width = 1 /Ls)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width = 10/Ls)
RMS Isolation Voltage (TA = 25°C, Relative Humidity"" 20%)
Operating Junction Temperature Range
Storage Temperature Range

IT(RMS)

6

Amps

ITSM

100

Amps

12t

41

A 2s

PGM

1

Watt

PG(AV)

0.2

Watt

IGTM

4

Amps

VISO

1500

Volts

TJ

-40 to + 100

°c

Tstg

-40 to +150

°c

Symbol

Max

Unit

R8JC
R8CS
R8JA

2.7
2.2 (typ)
60

°CIW

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case, Note 2
Case to Sink
Junction to Ambient

Notes: 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possib1e to the plastic body.
Thermowatt is a trademark of Motorola Inc.

t~~~tilYF.r~IJ:l~J~IIi~IB~.
MOTOROLA THYRISTOR DEVICE DATA
3-320

T2500FP Series
ELECTRICAL CHARACTERISTICS (Tc = 25·C unless otherwise noted.)
Symbol

Characteristic
Peak Off-State Current (Either Direction)
Rated VDROM @ TJ = 100·C. Gate Open
Maximum On-State Voltage (Either Direction)
IT = 30 A Peak
Gate Trigger Current (Continuous dc)
VD = 12 Vdc. Rl = 12 Ohms
VMT2( +).
VMT2( +).
VMT2( -).
VMT2( -).

Gate Controlled Turn-On Time
Rated VDROM. IT = 10 A.
IGT = 160 mAo Rise Time = 0.1 p.s
Critical Rate of Rise of Commutation Voltage
Rated VDROM. IT(RMS) = 6 A.
Com mutating di/dt = 3.2 Alms.
Gate Unenergized. TC = BO·C
Critical Rate of Rise of Off-State Voltage
Rated VDROM. Exponential Voltage Rise.
Gate Open. TC = 100·C

2

mA

VTM

-

-

2

Volts

-

10
20
15
30

25
60
25
60

-

1.25

2.5

MT2(+)

Volts

VGT
0.2

-

-

IHO

-

15

30

mA

tgt

-

1.6

-

p.s

dv/dt(C)

-

10

-

V/p.s

dv/dt

-

100

-

V/p.s

Part Number
MT2( +). G( +)

G(-)

G(+)

Quadrant III

Quadrant IV

MT2(-). G(-)

MT2( -). G( +)
MT2(-)

General

Usage

Quadrant I

MT2(+). G(-)

mA

Electrical Characteristics of Recommended
Bidirectional Switches

Quadrant Definitions

Quadrant II

Unit

-

IGT

Gate Trigger Voltage (Continuous dc) (All Quadrants)
VD = 12 Vdc. Rl = 12 Ohms
VD = VDROM. Rl = 125 Ohms. TC = 100·C. All Trigger Modes
Holding Current (Either Direction)
Main Terminal Voltage = 12 Vdc. Gate Open.
Initiating Current = 150 mAo TC = 25·C

Max

-

VG( +)
VG( -)
VG( -)
VG( +)

Min

Typ

IDROM

Trigger devices are recommended
for gating on Triaes. They provide:
1. Consistent predictable turn-on
points.
2. Simplified circuitry.
3. Fast turn-on time for cooler,
more efficient and reliable

MBS4991

MBS4992

Vs

6-10 V

7.5-9 V

IS

350 p.A Max

120 p.A Max

VS1- VS2

0.5 V Max

0.2 V Max

Temperature
Coefficient

•

0.02%rC Typ

operation.

~~;1<~;<~,:tm~~~~~~
MOTOROLA THYRISTOR DEVICE DATA
3-321

T2800
T2802

Triacs

Series

Bidirectional Triode Thyristors
· .. designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• T2800 - Four Quadrant Gating
T2802 - Two Quadrant Gating

TRIACs
8 AMPERES RMS
200 thru 600 VOLTS

I~o

~G

OMTI

CASE 221A-04
(TO-220AB)
STYLE 4

•

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Off-State Voltage, Note 1
(TJ = -40 to + 100°C) Gate Open
T2800, T2802

M
(TC

=

+ 80°C)

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = + 80°C)
Fusing Circuit
(TJ = -40 to + 100°C, t

=

Unit
Volts

200
400
600

B

0
RMS On-State Current
(Conduction Angle = 360°)

Value

VOROM

IT(RMS)

8

Amps

ITSM

100

Amps

12t

50

A 2s

PGM

16

Watts

PG(AV)

0.35

Watt

IGTM

4

Amps

TJ

-40 to +100

°c

Tstg

-40 to +150

°c

1.25 to 10 ms)

Peak Gate Power (Pulse Width

=

1 ,..s)

Average Gate Power
Peak Gate Trigger Current (Pulse Width

= 1 !Ls)

Operating Junction Temperature Range
Storage Temperature Range

THERMAL CHARACTERISnCS
Charactaristic
Thermal Resistance, Junction to Case
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that
the voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-322

T2800 • T2802 Series
ELECTRICAL CHARACTERISTICS (TC

= 25·C unless otherwise noted.)

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM. gate open) TC = 25·C
TC = 1000C

IORM.IRRM

Peak On-State Voltage (Either Direction)
(IT = 30 A Peak),

IGT

Gate Trigger Voltage (Continuous dc) (All Polarities)
(VO = 12 Vdc. RL = 100 Ohms)
(RL = 125 Ohms. Vo = VORM. TC = 100·C)

VGT

Holding Current (Either Direction)
(VO = 12 Vdc. Gate Open)
(IT = 125 mAl

IHO

~

....
II:

w
w
w

5w 90

........

~

........

85

::IE
::IE

...u

o

1.25

2.5

Volts

-

-

mA

1.6

-

p.s

dv/dt(c)

-

10

-

Vlp.s

Vlp.s

-

100
75
60

-

FIGURE 2 - POWER DISSIPATION

I"

f-- FULL CYCLE
""SINUSOIDAL
f-- ""WAVEFORM

FULL CYCLE
SINUSOIDAL
WAVEFORM

MAXIMUM./'

./ /

4

IL
/

V

'f'~ TYPICAL
~
,f. ~

""" ............... i'oo..

:::I

80

-

......

::IE

..x

30

tgt

B

i'oo..

'"

..

-

25
50
60
25
50
60

~

...

~...

10
25
20
15
25

12

"

:IE

Volts

30
60

0

...........

95

2

dvldt

FIGURE 1 - CURRENT DERATING

w

1.7

!LA

15
20

M

:::I

mA

-

= 4.3 Aims.

T2800
T2802

II:

10
2

p.s)

Critical Rate of Rise of Off-State Voltage
(Rated VORM. Exponential Voltage Rise.
Gate Open. TC = 100·C)

~ 100

-

mA

T2800
T2802

Critical Rate of Rise of Commutation Voltage
(Rated VORM. IT(RMS) = 8 A. Commutating di/dt
Gate Unenergized. TC = 80·C)

Unit

-

0.2

= 80 mAo Rise Time = 0.1

Max

Typ

-

VTM

Gate Trigger Current (Continuous dc)
(VO = 12 Vdc. RL = 12 Ohms)
VMT2(+). VG(+) T2800
T2802
VMT2( +). VG( _) T2800 Only
VMT2( -). VG( -) T2800
T2802
VMT2( -). VG( +) T2800 Only

Gate Controlled Turn-On Time
(Rated VOROM. IT = 10 A. IGT

Min

Symbol

Characteristic

"

ITIRMSI. RMS ON-STATE CURRENT lAMp)

'f'

./ /'
/.. "/

"

.L. ......
~

10
ITIRMS). RMS DN-STATE CURRENT lAMP)

MOTOROLA THYRISTOR DEVICE DATA
3-323

12

T2801
Series

Triacs
Bidirectional Triode Thyristors
• .. designed primarily for full-wave ac control applications. such as light dimmers.
motor controls. heating controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small. Rugged. Thermowatt Construction for Low Thermal Resistance. High Heat
Dissipation and Durability

TRIACs
6 AMPERES RMS
200 thru 800 VOLTS

CASE 221A·04
(TO-220AB)
STYLE 4

•

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Off-State Voltage, Note 1
(TJ = - 40 to + 100·C) Gate Open

B
0

200
400
600
SOO

M
N
(TC

=

+8O"C)

Peak Non-Repetitive Surge Current
(One Full Cycle. 60 Hz)
Fusing Circuit
(TJ = -40 to +l00"C, t

=

Peak Gate Power
(TC = +8O"C, Pulse Width

Unit
Volts

VORM

T2801

RMS On-State Current
(Conduction Angle = 360·)

Value

IT(RMS)

6

Amps

ITSM

80

Amps

12t

35

A 2s

PGM

0.35

Watt

PG(AV)

0.35

Watt

IGTM

4

Amps

TJ

-40 to + 100

·C

Tstg

-40 to +150

·C

1 to 8.3 ms)

= 2 p.s)

Average Gate Power
(TC = +SO·C. t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width

=

1 /Ls)

Operating Junction Temperature Range
Storage Temperature Range

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that
the voltsge applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-324

T2801 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC

= 25·C, Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.)

Min

Typ

Max

Unit

-

10
2

mA

VTM

-

2

3

Volts

Gate Trigger Current (Continuous dc), Note 1
(VD = 12 Vdc, RL = 12 Ohms)

IGT

-

25

BO

mA

Gate Trigger Voltage (Continuous dc), Note 1
(VD = 12 Vdc, RL = 12 Ohms)
(VD = VDRM, RL = 125 Ohms, TC = 10OOC)

VGT

-

1.5

0.2

-

4

Holding Current (Either Direction)
(VD = 12 Vdc, Gate Open, Initiating Current

IH

-

100

-

mA

tgt

-

2.2

-

I'S

dv/dt(c)

-

10

-

VII'S

Symbol

Charactaristic
Peak Off-State Current
(Rated VDRM, Gate Open, TJ

TJ

=

Peak On-State Voltage
(lTM = 30 A Peak; Pulse Width

Turn-On Time (1)
(VD = Rated VDRM, IT

=

= 25·C

IDRM

100·C)

=

,.A

1 to 2 ms, Duty Cycle"" 2%)

10 A, IGT

=

Volts

150 rnA)

= 80 rnA. Rise Time = 0.1

Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, IT(RMS) = 6 A, Commutating di/dt
Gate Unenergized, TC = BO·C)

I's)

= 4.3 Alms,

Critical Rate of Rise of Off-State Voltage
(VD = VDRM, Exponential Voltage Rise,
Gate Open, TC = 100·C)

V/p,s

dv/dt

T2801

-

50
30
10
10

B
D
M
N

-

-

-

-

Note 1. Applies for MT2( +), G( +), MT2( -), G( -).

FIGURE 1 - CURRENT DERATING

~
w

100 .........

rr
:::>

>«
rr
~

96

w

92

w
-'

'" 88
«
3:

j

«
:E
:::>
:E

..

84

x

:E

",'

>-

FULL WAVE SINUSOIDAL
WAVEFORM

t',..

i'li
>-

'"~

'" ,

80

FIGURE 2 - POWER DISSIPATION

~

f---

f---

FULL WAVE SINUSOIDAL
WAVEFORM

['..

/'

'" '"

V

V

/

,/

'" "

V

/'

./""

~

.......- V

4
5
IT(RMS), RMS ON·STATE CURRENT (AMP)

IT(RMS), RMS ON·STATE CURRENT (AMP)

li;'i;~~l~": ,'1. >~~~~"iL"t.;,#R.iti~;;;;r);8:j~'fltS;lq/r:~ilfJ~;~4"'itllitf;,tl~r;t~S;JJ::gf!"l~JS;j:~t;',
MOTOROLA THYRISTOR DEVICE DATA
3-325
- - - - - - -_.- - - - - - - -

- - - - - - - - ---- - - _ .

T4120
Series

Triacs
Silicon Bidirectional Triode Thyristors
· .. designed primarily for industrial and military applications for full wave control
of ac loads in applications such as light dimmers. power supplies. heating controls.
motor controls. welding equipment and power switching systems.
• All Diffused and Glass Passivated Junctions for Greater Stability
• Isolated Stud Package
• Gate Triggering Guaranteed In All 4 Quadrants

TRIACs
15 AMPERES RMS

200 thru 800 VOLTS

I~o ~, O~I

CASE 236-03
STYLE 2

•

MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Off-State Voltage. Note 1
(TJ = -65 to +100'C) Gate Open

Value

VORM
T4120

Unit
Volts

200
400
600
800

B

0
M
N
RMS On-State Current
(Conduction Angle = 360') TC = +75'C
Peak Non-Repetitive Surge Current
(One Full Cycle. 60 Hz)
Circuit Fusing
(TJ = -65 to +100'C. t = 1.26 to 10 ms)
Peak Gate Power (Pulse Width = 1 /Ls)
Average Gate Power
Peak Gate Trigger Current (Pulse Width = 1 /Ls)
Operating Case Junction Temperature Range
Storage Temperature Range
Stud Torque

IT(RMS)

15

Amps

ITSM

100

Amps

12t

50

A 2s
Watts

PGM

16

PG(AV)

0.5

Watt

IGTM

4

Amps

TC

-66 to +100

Tstg

-65 to +160

'c
'c

-

30

in. lb.

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that
the voltage applied exceeds the rated blocking voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-326

T4120 Series
ELECTRICAL CHARACTERISTICS (TC = 25'C, either polarity of MT2 to MTI voltage, unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TC = 25°C
TC = 100°C
Peak On-State Voltage
(IT = 21 A Peak)

VTM

Gate Trigger Current (Continuous dc), Note I
(VO = 12 Vdc, RL = 30 Ohms)
VMT2(+), VG(+); VMT2(-), VG(-)
VMT2(+), VG(-); VMT2(-), VG(+)
VMT2(+), VG(+); VMT2(-), VG(-), TC = -65°C
VMT2(+), VG(-); VMT2(-), VG(+), TC = -65°C

IGT

Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VO = 12 Vdc, RL = 30 Ohms)
TC = 25°C
TC = -65°C
(VO = Rated VOROM, RL = 125 Ohms, TC = 100°C)

VGT

Holding Current
(Vo = 12 Vdc, Gate Open)
(IT = 500 mAl

Typ

Max

Unit

-

-

-

10
2

pA.
mA

-

1.4

1.8

Volt

Min

IORM,IRRM

mA

-

-

-

50
80
150
200
Volts

-

0.2

-

2.5
4

-

mA

IH
TC
TC

=
=

-

75
300

tgt

-

1.6

2.5

dv/dt(c)

2

10

-

25°C
-65°C

Gate Controlled Turn-On Time
(VO = Rated VORM, ITM = 25 A Peak,
IGT = 160 mA, Rise Time = O.llLs)
Critical Rate of Rise of Commutation Voltage
(Rated VORM, IT(RMS) = 15 A,
Cummutating di/dt = 8 Aims, Gate Unenergized, TC

=

ILS

V/p.s

75°C)
dv/dt

Critical Rate of Rise of Off-State Voltage
(Rated VORM, Exponential Voltage Rise,
Gate Open, TC = loa'C)
T4120

•

V/lLs

30
20
10
10

B

0
M
N

150
100
75

-

-

-

Note 1. All Voltage polarities referenced to main terminal 1.

~
w
a::

::>

t-

<[

~
1li
tw

<[
'"
u

90

w

85

j

<[

'"
'"x
'"U
::>

80

<[

t-

~
t-

i\.
'\.
95

-'

<[
'"3:

FIGURE 2 - POWER DISSIPATION

FIGURE 1 - CURRENT DERATING
100

15

FUll

""-

25

<[

W~VE SIN~SOIOAl

~
z

0

WAVEFORM

20

/'

;::
~

"

~
C

MAXIMUM/

15

~
~

I'-..

w

10

'"g

.............

""'" '"
12

>
<[

""'" r-....

16

IT(RMS). RMS ON·STATE CURRENT (AMP)

5

/ .V

~ ::;;.-'
;;
<[
;;:- 0 ~ P""
o

FUll WAVE SINJSOIOAl
WAVEFORM

12

ITlRMS). ON-STATE CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-327

V

V V
. / ~Cil
/ ./

a::

i'.. ......

V

16

T6400

Triacs

T641 0

Silicon Bidirectional Triode Thyristors

T6420

· .. designed primarily for industrial and military applications for the control of ac
loads in applications such as power supplies, heating controls, motor controls,
welding equipment and power switching systems; or wherever full-wave, silicon
gate controlled solid-state devices are needed.
• Glass Passivated Junctions and Center Gate Fire
• Press Fit Stud - T6400
Stud -T6410
Isolated Stud - T6420
• Gate Triggering Guaranteed in All 4 Quadrants

Series
TRIACs
40 AMPERES RMS
200 thru 800 VOLTS

MAXIMUM RATINGS
Rating

Symbol

Peak Repetitive Off-State Voltage, Note 1
(TJ = -65 to + 110·c) Gate Open
T6400B, T6410B, T6420B
T6400D, T6410D, T6420D
T6400M, T6410M, T6420M
T6400N, T6410N, T6420N

•

TC (Pressfit) = 70·C
TC (Stud) = 65·C

On-State Current RMS
(Conduction Angle = 360·)

Peak Surge Current (Non-Repetitive)
(One Full Cycle, 60 Hz)
Circuit Fusing
(TJ = -65 to +110·C, t

=

Value

Unit
Volts

VDRM
200
400
600
800
IT(RMS)

40

Amps

ITSM

300

Amps

12t

450

A 2s

PGM

40

Watts

PG(AV)

0.75

Watt

IGTM

12

Amps

TC

-65 to +110

·C

Tstg

-65 to +150

·C

-

30

in. lb.

1.25 to 10 ms)

Peak Gate Power
(Pulse Width = 10 p.s)
Average Gate Power
Peak Gate Current (Pulse Width

=

1 p.s)

Operating Temperature Range
Storage Temperature Range
Stud Torque

THERMAL CHARACTERISTICS
Characteristic

Symbol

Thermal Resistance, Junction to Case Pressfit
Stud
Isolated Stud

RruC

Max

Unit

0.8
0.9
1

·CIW

Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated blocking
voltage.

MOTOROLA THYRISTOR DEVICE DATA
3-328

~I:.....STYLE 2
T6410
STUD

~

~

. . . . . . OG
STYLE 2

T6400
PRESS FIT

I
"

CASE 311-02
STYLE 2
T6420
ISOLATED STUD

T6400 • T6410 • T6420 Series
ELECTRICAL CHARACTERISTICS (TC

=

25°C unless otherwise noted.)

Characteristic

Symbol

Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM. gate open) TJ = 25°C
TJ = 110°C

-

Maximum On-State Voltage (Either Oirection)
(IT = 100 A Peak)

VTM

Gate Trigger Current (Continuous de'!. Note 1
(VO = 12 Vdc. RL = 30 Ohms
VMT2(+). VG(+)
VMT2(+). VG(-)
VMT2(-). VG(-)
VMT2(-). VG(+)
VMT2(+). VG(+). VMT2(-). VG(-). TC = -65°C
VMT2(+). VG(-). VMT2(-). VG(+). TC = -65°C

IGT

Gate Trigger Voltage (Continuous de)
(VO = 12 Vdc. RL = 30 Ohms. TC = 25°C
TC = -65°C
(Vo = Rated VORM. RL = 125 Ohms. TC = 110°C)

VGT

Holding Current (Either Oirection)
(VO = 12 Vdc. Gate Open)
(Initiating Current = 500 mAl

IHO

Gate Controlled Turn-On Time
(Rated VORM. IT = 60 A. IGT

TC
TC

Min

Typ

Max

Unit

-

-

10
4

pA
mA

1.5

2

Volts

IORM.IRRM

-

mA

-

15
30
20
40

50
80
50
80
125
240

1.35

2.5
3.4

-

Volts

-

0.2

mA

-

= 25°C
= -65°C

= 200 mAo Rise Time = 0.1

-

25

60
100

-

-

tgt

-

1.7

3

/LS

dv/dt(c)

-

5

-

V/I£S

I£S)

Critical Rate of Rise of Commutation Voltage. On-State Conditions
(di/dt = 22 Aims. Gate Unenergized. Vo = Rated VOROM.
TC (Stud) = 65°C
IT(RMS) = 40 A. TC (Pressfit) = 70°C)
Note 1. All voltage polarities referenced to main terminal 1.

FIGURE 2 - RMS CURRENT DERATING

FIGURE 1 - ON-5TATE POWER DISSIPATION
0;

50

z

o

~~~'ff"~~'
: \
iU360

40

~

~ 30
C

o

a:

3!

~ 20
w

180 0

«

120

V/

MAXIMUM

o

-+---+----+----+---1

«-

§~ 100~--l_--l_~~~l_--l_--l_--l_--t---t---1

v/

... 1-

«<

/. V
. / /'" TYPICAL

:;
ffi
:::> <>.

90

~

80

"''''
~~

70

~~

X

«w

.,..,... ~

0~

CURRENT WAVEFORM = SINUSOIDAL
LOAD = RESISTIVE OR INDUCTIVE
CONDUCTION ANGLE =360 0

~ ~ 110 '-00-1---1---1---1---1---1---1---+---+----1

/ V

./"/

/'i

10

:;;
ii:"

0

CONDUCTION ANGLE
= 01 + 0111

to

:w

::c

/1

CURRENT WAVEFORM = SINUSOIDAL
LOAD = RESISTIVE DR INDUCTIVE

S
~

130.---.---.---.---.---.---.---.---.---.---,

60

::::;.-

10
20
30
ITIRMS), FULL CYCLE RMS DN·STATE CURRENT (AMP)

40
ITlRMS), RMS ON-STATE CURRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-329

T6401
T6411
T6421

Triaes
Silicon Bidirectional Triode Thyristors

Series

· .. designed primarily for industrial and military applications for full wave control
of ac loads in applications such as light dimmers, power supplies, heating controls,
motor controls, welding equipment and power switching systems.

TRIACs

• Glass Passivated Junctions and Center Gate Fire
• Press Fit, Stud, Isolated Stud Packages
• Gate Triggering Guaranteed In All 4 Modes

30 AMPERES RMS
200 thru BOO VOLTS

MAXIMUM RATINGS
Rating

Symbol

Repetitive Peak Off-State Voltage, Note 1
(TJ = -65 to +100"C) Gate Open
T6401B. T6411B. T6421B
T6401D, T6411D, T6421D
T6401M, T6411M, T6421M
T6401N,T6411N,T6421N

•

On-State Current RMS
(Conduction Angle = 360°)

Value

Unit
Volts

VDRM
200
400
600
800
IT(RMS)

30

Amps

ITSM

300

Amps

12t

450

A 2s

PGM

40

Watts

PG(AV)

0.75

Watt

IGTM

2

Amps

TC

-65 to +100

°c

Tstg

-65 to +150

°c

-

30

in. lb.

Symbol

Max

Unit

RIIJC

0.8
0.9
1

0c/w

TC';; +65°C

Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz)
Circuit Fusing
(TJ = -65 to + 100°C, t = 1.25 to 10 ms)
Peak Gate Power
(Pulse Width = 1 j.£S)
Average Gate Power
Peak Gate Current Pulse Width.;; 1 j.£S)
Operating Case Temperature Range
Storage Temperature Range
Stud Torque

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case Pressfit
Stud
Isolated Stud

Note 1. Ratings apply for open gate conditions. Thyristor devices shan not be tested with a constant
currant source for blocking capability such that the voltage applied exceeds the rated blocking
voltage.

MOTOROLA THYRISTOR DEVICE DATA

3-330

I

I
,I "

CASE 263-04
STYLE 2
T6401
PRESS FIT

CASE 310-02
STYLE 2
T6411
STUD

CASE ,,,...

STYLE 2
T64Z1
ISOLATED STUD

16401 • 16411 • 16421 Series
ELECTRICAL CHARACTERISTICS (TC = 25'C, and Either Polarity of MT2 to MT1, unless otherwise noted.)
Symbol

Characteristic
Peak Forward or Reverse Blocking Current
(Rated VORM or VRRM, gate open) TJ = 25'C
TJ = 100'C

IORM,IRRM

Min

Typ

Max

Unit

-

-

10
4

,.,A
mA

2.1

2.5

Volts

Maximum On-State Voltage (Either Direction)
(IT = 100 A Peak)

VTM

Gate Trigger Current (Continuous de), Note 1
(VO = 12 Vdc, RL = 30 Ohms
VMT2(+), VG(+); VMT2(-), VG(-)
VMT2(+), VG(-F VMT2(-), VG(+)

IGT

Gate Trigger Voltage (Continuous de) (All Trigger Modes)
(VO = 12 Vdc, RL = 30 Ohms)
(VO = Rated VORM, RL = 125 Ohms, TC = 100'C)

VGT

Holding Current
(VO = 12 Vdc, Gate Open)
(IT = 150 mAl

IHO
,

-

-

tgt

-

3

Gate Controlled Turn-On Time
No = Rated VORM, ITM = 45 A, IGT
Rise Time = 0.1 /Ls)

mA

-

20
35

50
80

-

1.35

2.5

Volts
0.2

-

60

mA

1.7

3

/LS

20

-

V//LS

= 200 mA,

Critical Rate of Rise of Commutation Voltage, On-State Conditions
(di/dt = 16 Alms, Gate Unenergized, Vo = Rated VORM,
IT(RMS) = 30 A, TC = Rated Value from Figure 1)

dv/dt(c)

Critical Rate of Rise of Off-State Voltage
(VO = Rated VORM, Exponential Rise, TC = 100'C)
T6401B, T6411B, T6421B
T6401 0, T64110, T6421 0
T6401M, T6411M, T6421M
T6401N, T6411N, T6421N

dv/dt

VI/Ls

-

40
25
20
20

-

-

-

-

Note 1. All voltage polarities referenced to main terminal 1.

FIGURE 1 - CURRENT DERATING
G

~
w

100

a:

::::0

!;c

a:
~

90

~

"

>-~

5

80

w
--'

'"
~

10

::E

60

..j
::::0

.,

PRE~SFIT

~ ::--....

~~
~ r-.......
/"" ~ l'-...
ISO LATEO STUD
~

u

>--

"

o

FULL WAVE
SINUSOIDALWAVEFORM

SjUO

::E

X
~ 50

FIGURE 2 - POWER DISSIPATION

16

50

~

~

z

o

40

~
~

C

MAXIMUM

I-30

1/ /

FULL WAVE
SINUSOIDAL
WAVEFORM'

/

~

a:

"'-

"'" '""

~
Ii:

..

w

~

~

«

r-....

~
24

ITIRMS). RMS ON-STATE CURRENT lAMP)

10

;;
32

0

V

L

V

TYPICAL

/ /'

20

/' /'

'"a:

"","" ~

,.,.

./ . /

/ .V

~ F-'
o

16

24

IT (RMS). ON-STATE CUflRENT (AMP)

MOTOROLA THYRISTOR DEVICE DATA
3-331

32

40

•

MOTOROLA THYRISTOR DEVICE DATA
3-332

Outline Dimensions
and Leadform Options

4-1

•

Outline Dimensions
CASE 22-03

CASE 22A·01
Style 1

TO-20SAA ITO·1S)
Styles 6,13

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI

~

Yl4.5M,1982.
2. CONTROLLING DIMENSION: INCH.

N

G

1

II

~

3. PIN 3 CONNECTED TO CASE.

STYlE 6,
PIN 1. CATHODE
'GATE

J

a.ANODE

...., ...• ..,

smEl:
PINt. EMlTIER
2. BASf 1
3. BASE 2

STYLEt3:

MAX

..•

0,
.162 OJ"

PIN 1. ANODE
'GATE

3:CATMODE

..LUME1ERS
Mfj

MAlI

A

5.31

,64
4.95

•

...., ,

C
D
G
H
J

1.17

tJ,

K
M

:0
AlIJEIECnoIeIanddmanaionsapply,

N

CASE 29·04

..,,

DIM

.

0.41

..3
AS

2.54 TYP

,"
t.22

0.71
12.70
45"TYP
I.27TYP

INCHES
M..
MAlI
,209 0,230
0.178 0.195
0.170 0.210
.016 0.019
O.100TYP
0,036 0,046
0.028 0,048
0,500
45°TYP
O.05OlYP

CASE 54-05
Style 2

TO-22SAA ITO·92)
Styles 9, 10, 12, 16

NOTES,
1. CONTOUR OF PACKAGE BEYOND ZONE "pI' IS
UNCONTROUED.
2. DIM "f" APPLIES BElWEEN ''H'' AND "l" •DIM
HOrt &: "5" APPUES BElWEEN "l" I. 12.70mm
(Q.5~1 FROM SEATING PlANE. LEAO DIM IS
UNCONTROlLED IN ''H'' I; BEYOND 12.7Omm
('5", FROM SEA~NG PlANE,
3. CONTFIOWNG DIM: INCH.

SIYlU,
PINt BASE 1

2,EMIT1EA
3, BASE2
STYLE 10:

STYlE '6,

ANt. CATHODE
1 GATE
• ANODE

...

11M
32

0.4, <"
,55
6

,"

PINt ANODE

2, GATE
• CATHODE

MAX
39.12
20,"

...

.J!l! !!!L

MAlI

0.210

11M

0.175

0,
0,'
0,022
0.019

C
D

-1.22

',30

,,,"

~l

~

2,64

3.06

0.112

F

29.
10.67
5,33

30.40
11.18

,'20
1.197
0,4411
l20

"

'6

A

ilI55
,'00
0.105

G
H

0,500

2,68

K

0.105
11

3.43

II.

0.170

AI
,,' ,2,64 °0.018
2.42

2..

srvt.E12:
PIN to MAIN TERMINAL 1
1 GATE
U'AlllTERMlNAl.2

'36

0,015

16
613
,64

R
0,

MOTOROLA THYRISTOR DEVICE DATA

4·2

,19"

I.

<119

--=-

1.540

0.815
0.312

1,9

un

..., ..m
0.420
10
0,

15'

0.420
11

~

STYLf 2, !THY,
PINt. GATE
2. CATHODE
CASE: ANODE

,
CASE 61-03

CASE 59·04

Style 1

N~

,1:,ll
:fIT

L~"~'

Ie

DL

e-J-

Q~.+~~. 1
I
H

\:

' ItT

~I./

!

STYU: 1:
PIN 1. GATE
2. CATHODE
CASE: ANODE

NOTES,
1. All RUlfS AND NOTES ASSOCIATED W111< JEDEC
0041 OUTUNE SHAll AmY.
2. POlAR1lY DENOTED BY CATHODE BAND.
1 LEAD OIAMETER NOT CONlllOliED W1lHitI '1"
D.,ENSION.

--

DIll

MIN

A
B
D
K

5.97
179
~76

0,110

0.030
1.100

21.94

A

•

C
D
E
F

•
•
J

MAX
0.280
Jli

U35

N
Q

0.034

•

MAX

DIM

H

....

MAX
liO
3JI5
OJII

i

"""':- F _

,."

38.23

20.32

20.70
7.92
'.33

.iiS
4.83
2
29.lio

3.05

U

INCHES
MAX
MIN
1.505 1.540
0.0 0.815
0.17' 0.312
0.190 0.210
0.112 0.120
1.1n 1197
0420 0....
0.210 0.220
O. 1 0.661

10.67

30."
1118

'.33
16.54
16.51

17.27

0.650

0.680

<32
<05

0.130
0.151

26.16
2.79

0.70

0.170
0.161
0.1130
0.110

'.59

16.79

'.30
'.84
2<84
2.29

R

to

0.090

CASE 77·05

CASE 63-03

Style 1

.

TO·225AA
Styles 2, 5

~
R

•

=1uBr-~F

N

lr

1~~i1

Q.lJ~G

rf(- ---1

FIT

Q~

J:JI:[ -----.

t

~

rr;;'
~
\.~EA~NG ~

PlANE.t§;l
I0-32UNF4A

-

1!

IH ~
_,

s'-

STY1.E',

PINt CATHODE
2. ANODE
3. GATE

STYLE 1:
PIN 1. CAntOOE
Z. GATE
STUD: ANODE

STYLE 5:
PINt MT1

,. Ml2
1 GATE

NOTE.
t ALL RULES & NOTES ASSOCIATED WITH
REFERENCED TO-M OUTLINE SHALL APPLY.

mM

•
C
E

P4LUMETERS
MAX

.,N

10.77
7.92

1.52

F
G
H

2.03
0.33

J
K

10.16
17.78

N
P
Q

R

•
T

11.10

10.16
4.45
3.45
11,5.1
21.72
10.17

Q.400

0.078
0.453

0.700

0.659

4.14

4.80

10'

1.91

10.16
4.212

0.163
0.040
0.400

4.310

0.1658

1.52

...

INCHES
MAX
0.437
OAOO
0.175
0.136

M..
0.424
0.300
.060
0.080
0.013

1.66

•

orA TO OIM A" BAT MAXIMUM MATERIAl
CONDITION.

~H

K

1

NOTES:
1. MT=MAIN TERMiNAl.
2. LEADS, TRUE POSITIONED WITHIN O.25mm 10.010)

A

0.424
0.189
0.075

MlIJM
MIN
MAX
10.80
11.04
7.50
7.74

C
D
F
G

''''
0.51

H

1.27

'.93
'.32

•

0.63

14.61

16.63

cf

3.76

R

1.15
0.84

0.1697

V

3"TYP

3.69
1.02

MOTOROLA THYRISTOR DEVICE DATA
4-3

2.41

0.39

M

0.080

'.66
0.66
117

,...
4.1)1
1.39

•
0.020
0.115
0.091

0.125

0.097

0.060

O.

0.015
0.575

0.025
0.659

3"TYP
0.148 0.158

0...

O.

3.63

0.,.

0.055
0.035

0.1
0.040

.166

-

~

,
CASE 79-04
TO-205AD

CASE 86-01

Style 1

Style 3

~
--

~ -=J-f
-II--D'"

1"1~0,3610,.,~®

c

f

OIl

".
MIl

•• B.S,
."
7,75

C
0
E
F
G
H
J

•
•
"

L
M

',60

0,53
OA'
0,23
1.04
OAB
OA'
... BSC
0.72
0.66
0.74
1.14
12.70
6..15
45°BSC
1.27
2,54

,.

2. GATE
3. ANODE

STVI.E1:
PIN 1. GATE
2. CATHODE
STUD: ANODE

NOTE:
1. DIM "G" MEASURED AT CAN.

MAXIMUM.

•

10.0101 IN ZONE R. THIS ZONE CONTROllED FOR

°0.250"'BSC.750

G

DIMENSION LAND KMINIMUM, L£AD DIAMETER
IS UNCONTROlLED IN DIMENSION P AND
BEYOND DIMENSION KMINIMUM.

L

un

l.78TYP

,79

10.72

15AS

.310

TYP
0.110
0,'"
0.660

0.6,

CASE 90-05
TO-USAB

Style 1

Style 1

~
A

I';'

--f:B-

I"

M

llJ

iHr-

T'
L

K

-~

L__

F

~h-f
'~~~ +- '

_N

A

:vt:K

HL

I

\--D

r

....j

••

MKUMETE1IS
!IN
MAlI

It

STYLE 1;
PIN 1. CATHODE
2. ANODE
3. GATE

.

,

C

D
G
H

•
L
N

•

S

0,430

.350

D

aI'
1.09

F

11

G
H

1.240TYP
0.075

K
M

31.50TYP
1.65
1.91

0,065

8,"
33.63

3,.,
4,57
31),48

3,"
5,OS

MILLIMETERS
MAlI

.235
0,034

0,030
0,091)

."

...

16.13
12.57

0.110
0.370

5,"
0,86
2.1.
9,"

0.76

DIM
A

INCHES
MAlI

Mro

10.92

0.350

C

J

,J2il

10,'35
O.11K1
1.200

NOTES:
1. DIM "0" UNCONTROLLED IN ZONE "H",
2. DIM "F" OIA THRU.
3. HEAT SINK CONTACT AREA U30TTOM).
4. LEADS WITHIN 0.005" RAe Of TRUE POSITION
(TP) AT MAXIMUM MATERIAL CONDITION.

~=-.t

NOTES:
1. DIM "G" MEASURED AT CAN.
2. lEAD NO.3 ±7.5° DISPlACEMENT.

DIM

J

-0-

jBI~

STYLEt:
PINt. GATE
2. CATHODE
3. ANODE

INCItES
Mro
MAlI
0,43)

•••
"
1&,.
"
•

5. DIMENSION FAPPLIES BfTWEEN DIMENSION P
AND L DIMENSION 0 APPLIES BeTWEEN

0,'"

-

C
F

AUTOMATIC HANDUNG.

•

IILlIIIEIERS
M..
MAlI
11.10

DIM

4. DIMENSION BSHAll NOT VArf'( MORE THAN 0.25

CASE 87L-02

•

.............

~~

VI4.5M,I982.
2. CONTROlliNG DIMENSION: INCH.
3. DIMENSION J MEASURED FADM DIMENSION A

033'
0,
0,021
004'
0,016
0.019
O.2ODBSC
0028 0,034
0,028

--

J

STYLE 3:
PIN 1. CATHODE

1. DIMENSIONING AND TOLERANCING PER ANSI

0,
0,240
0.016
0009

0.100

t?i~
~ Jl
K

ITI .®I H ®I

NOTES:

0,MIN336 0,MAlI
370
',50

PIME

j

0

INCIES

.......

K

J~
~
M

[~

j

I I

Q

01"

"

0100

U
V

MOTOROLA THYRISTOR DEVICE DATA
4-4

MAlI
0,645
,505
,'35
,049
0,043
0.138
,'48
O.l66BSC
0.115
0.105
0,034
0.032
0,595 0,645

12.83

3,.,

0.125

",9'TYP
1.91
6.22
2,03

INCItES

0,535
0,495

1.24
3.76
4.22BSC
>8,
2.92
0.,
0,864
16.38

4,,.

...

'6.36

9'TYP

49'

2.16

',48

-

0165
0.,5
0.245

' 0,060

0195
0,065
0.255

~

CASE 174-04

CASE 175-03

Styles 1, 3

Styles 1,3

STYLE 1

TERM 1 GATE
2 CATHODE
3 ANODE

STYLE 1
TERM 1 CATHODe
2 GATE
STUD ANODE

STYLE 3

TERM 1 GATE

D,.
A

MillIMETERS
MAX
MI.
1273
1283
11.Bl
1206

•,
'" '"
'"

C

F
H
J

0330

216

0035

0105

441
246

0148

0.174

00"

009)
0"0

2032
406

•

C
F

I 0100

1295

'"

A

0"0

204

Q

DIM

.-~ ~
0415

254
089

K
N

2 MAIN TERMINAL 1
3 MAIN TERMINAL 2

INCHES
MIN
MAX

0.510
OISf}

0065

Mll.UMfT£fIS
MIN
MAX
1560
142(1
14.00
2070 24.13

15"
0.89

H
J
K

3.75
10.67

l

6.99
I."
1270

978

Q

T

"6

441

""
)7,
10.54

4.06
1283

INCHES
M~
MAX
0604
0.614
0.551
0.559
0815
0.950
0.035
01"'
0'174
014'
0420
0.455
0385
0416
0.275
0306
0065 0160
0500 0505

STYLE 3
TERM 1 MAIN TERMINAL 1
2 GATE
STUD MAIN TERMINAL 2

CASE 221C-02

CASE 221A-04
TO-220AB

Styles 2, 3

.F

Styles 3, 4

G

DI.10.2510.01111 ®IB

NOTES'
1. DIMENSIONING AND TOLERANCrNG PER ANSI
Y14.5M,I982.
2 CONTROlliNG DIMENSION: INCH.
3. DIM Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARnles ARE AllOWED.

STYLE 3:

PIN 1. CATHODE
2. ANODE
a.GATE
4. ANODE
STYLE 4:
PIN 1. MAIN TERMINAL!

2. MAIN TERMINAL 2
a.GATE
4. MAIN TERMINAL 2

ON
A

•

MlLUMETERS
r.IN
MAX
15.75
10.28
9."

14.48

4"

C
0

0.64

F

0."

3.Bl

..73

242
2.00
0.36

2."
3.93

1270

14.27

tiS
4."
2.64
2.04

I."

•

H
J
K
l
N
Q

"T
S

U

V
Z

1.15
5.97
0.00

'"

4.82

0.55

'.33
3.04
2.7>

..,
1.39
1.27

2.04

INCHES
MAX

". .,"

0.570
0.380
0.180
0.025
0142
0.'"

"M
A

0,"'
0.190
0.035

B
C

0147
0105

D

0.110
0.014

0.155

F

0."'"
0.045

0.562
0.056
0.210
0.120
0.110
0.055

0190

0.100
0.080
0.046
0.235

0.255

0000
0.046

00'"

9."
4.45
0.64
864
3."

4."

...

INCHES

0600
0.308
0.175
0.025

MAX
0.700

0.468
0.195

0.040
0.365

l
N

P

).36

0.270

0.290

12.70

0.480

3.04

0"'"

0.090
0.105
0.070

0.120
(1,115

•
H
J
K

Q

S

...

1210
219

un

1.78

0.080

1m
10.36

1.01
9.01
3.81
2.54BSC
3.93
2.aD
0.46
0.71
12.70
13.97
1.15
I.n
1.25

E

0022

PttLUMETERS
MAX

MIN
1728

2.92
2,28

0.340

0.140
01"
O.100BSC
0.110
0.155
0.018
0.028

0.090

0.'"

0.045

0.070

® I vi

•

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI
Y14.5M,1982.
2. CONTROLLING DIMENSION: INCH.
3 LEAD DIMENSION UNCONTROLLED WITHIN
DIMENSION',?:'

STYLE 2
PINt CATHODE
2 NODE
3. GATE

0.046
STYLE 3'
PINt MTt
2.MT2
3. GATE

0.090

""1·","'~'%'.kh,,",,' "",:".<. ,.~. ~~ '*·t';'·\i·",.XJ1\L'W'" '«~:"~;';5.P(.,N",~~~~':'I!Jt,*~~j::'ii'lli!%.thJ~"';>~::
~','·."<~~·~V~·:~~·~J ·/';::":~·V:/:~"4;."~;t-¥N£~'~.:·~.~~~JJJtt~~~~~~:~.~~~~;~~~.~$l~~~~~~~

MOTOROLA THYRISTOR DEVICE DATA
4-5

CASE 235-03

CASE 263-04

Styles 1, 2

Styles 1,2

"
~
j

A.

""

'G

n-.

I

H

--r 1-~l
K F
;. ---r t

C

L.

~
N

STYLE 1.
PINt
2.
3
STUD.

STYLE 1
PINt CATHODE
2 GATE
3 ANODE

CATHODE
GATE
ANODE
ISOLATED

STYLE 2
PINt MTl
2. GATE
3 MT2

STYLE 2.
PIN 1. MAIN TERMINAL 1

DOl

•
8
C
F
G
H
J

•
l

•

Q

T

MIlUMETERS
MIN
MAX
14.00
12.73

14.20
12.83
26,16

1.65

<..

3.75
10.67
9."
6.99
8.48
343
0.99

8.48
4.41
11.56
10.54
7.15
6.99
3.81
2.16

-

INCHES
MIN
MAX
0.551
0559
0.501
0.505
1030
0.065
0.160
0.255
0.148 0.174
0.420 0455
0.'" 0.415
0.275 0.305
0255 0.275
0.135
0.150
0.035
0."

2 GATE
3. MAIN TERMINAL 2
STUD. ISOLATED
DOl

•
B
C

Q

7.62
1.40

14.20
30.23
<06
6.13
11.56
17.02
8.89
2,16

T

12.73

12.83

F

2.67
3.43

H
J

1(},67

•
l

CASE 267-03

CASE 310-02

Style 1

Styles 1, 2

MILUMETERS
MIN
MAX
15.60

15.
14.00

15.15

...

INCHES

0.604
0.551
1.050
0.135
OA21)

0.620
0.300
0.055
0.501

MAX
!l.614
0.559

1100
0.160
0.265
0.455
0.670
0.350
0.085
0.505

II
STYLE 1:

PIN 1. CATHODE
2. GATE
CASE' ANODE
NOTES:
1. DIMENSIONING ANO TOl£RANCING PER AMSI
Yl4.SM,19B2.

STYLE 2.

PIN 1. MT1
2. GATE

2. CONTROLLING DIMENSION: INCH.

CASE: MT2

DIM

DIM

•
•
B
D

-4.83

1.22

~

• .65

5.33
1.32

INCHES
MIN
MAX
0.3J\'~;'~'Wk·e~'.

MOTOROLA THYRISTOR DEVICE DATA

5-9

p~~td~~t~ter

•

Motorola
Direct
Replacement

MAC92-B
MAC92AB
MAC93-1
MAC93Al

MAC97AB

MAC93-2
MAC93A2
MAC93-3
MAC93A3
MAC93-4
MAC93A4

MAC97B4

MAC97B4

Motorola
Similar
Replacement
MAC97AB
MAC97B4

MAC97B4
MAC97B4

MAC97B4
MAC97B4
MAC97B4

MAC93-5
MAC93A5
MAC93-6
MAC93A6
MAC93-7
MAC93A7

MAC97B6

MAC93-B
MAC93AB
MAC94-1
MAC94Al
MAC94-2
MAC94A2

MAC97BB

Page #
3-149
3-149
3-149
3-149
3-149
3-149
3-149
3-149
3-149
3-149

MAC97BB

3-149
3-149
3-149
3-149
3-149
3-149

MAC97BB
MAC97-4
MAC97-4
MAC97-4
MAC97-4

3-149
3-149
3-149
3-149
3-149
3-149

MAC94-3
MAC94A3
MAC94-4
MAC94A4
MAC94-5
MAC94A5

MAC97-4
MAC97-4
MAC97-4
MAC97-4
MAC97-6
MAC97-6

3-149
3-149
3-149
3-149
3-149
3-149

MAC94-6
MAC94A6
MAC94-7
MAC94A7
MAC94-B
MAC94AB

MAC97-6
MAC97-6
MAC97-B
MAC97-B
MAC97-B
MAC97·B

3-149
3-149
3-149
3-149
3·149
3-149

MAC95·1
MAC95Al
MAC95·2
MAC95A2
MAC95·3
MAC95A3

MAC97A4
MAC97A4
MAC97A4
MAC97A4
MAC97A4
MAC97A4

3-149
3·149
3-149
3-149
3-149
3-149

MAC95-4
MAC95A4
MAC95-5
MAC95A5
MAC95-6
MAC95A6

MAC97A4
MAC97A4
MAC97A6
MAC97A6
MAC97A6
MAC97A6

3·149
3-149
3-149
3·149
3-149
3-149

MAC95-7
MAC95A7
MAC95·B
MAC95AB
MAC96·1
MAC96Al

MAC97AB
MAC97AB
MAC97AB
MAC97AB
MAC97B4
MAC97B4

3-149
3·149
3·149
3·149
3-149
3-149

MAC96-2
MAC96A2
MAC96-3
MAC96A3
MAC96-4
MAC96A4

MAC97B4
MAC97B4
MAC97B4
MAC97B4
MAC97B4
MAC97B4

3·149
3-149
3-149
3·149
3-149
3-149

MAC96·5
MAC96A5
MAC96-6
MAC96A6
MAC96-7
MAC96A7

MAC97B6
MAC97B6
MAC97B6
MAC97B6
MAC97BB
MAC97BB

3-149
3·149
3·149
3-149
3·149
3·149

MAC97BB
MAC97BB

3·149
3·149
3·149
3-149
3-149
3·149

MAC96·B
MAC96AB
MAC97·1
MAC97Al
MAC97Bl
MAC97·2

MAC97B6
MAC97BB

MAC97-4
MAC97A4
MAC97B4
MAC97·4

MAC97B6
MAC97B6

p~~d~~~ter

Motorola
Direct
Replacement

Page #

MAC97A2
MAC97B2
MAC97·3
MAC97A3
MAC97B3
MAC97-4

MAC97A4
MAC97B4
MAC97-4
MAC97A4
MAC97B4
MAC97-4

3-149
3-149
3-149
3-149
3-149
3·149

MAC97A4
MAC97B4
MAC97-5
MAC97A5
MAC97B5
MAC97-6

MAC97A4
MAC97B4
MAC97-6
MAC97A6
MAC97B6
MAC97-6

3-149
3·149
3·149
3·149
3-149
3-149

MAC97A6
MAC97B6
MAC97·7
MAC97A7
MAC97B7
MAC97·B

MAC97A6
MAC97B6
MAC97-B
MAC97AB
MAC97BB
MAC97·B

3-149
3-149
3-149
3-149
3-149
3-149

MAC97AB
MAC97BB
MAC210-4
MAC210A4
MAC210A4FP
MAC210-5

MAC97A8
MAC97BB
MAC210A4
MAC210A4
MAC210A4FP
MAC210A6

3-149
3-149
3-153
3-153
3-157
3-153

MAC210A5
MAC210·6
MAC210A6
MAC210A6FP
MAC210·7
MAC210A7

MAC210A6
MAC210A6
MAC210A6
MAC21OA6FP
MAC210AB
MAC210AB

3-153
3-153
3-153
3-157
3·153
3-153

MAC210-8
MAC210AB
MAC210ABFP
MAC210·9
MAC210A9
MAC210-10

MAC210AB
MAC210A8
MAC210ABFP
MAC210Al0
MAC210Al0
MAC210Al0

3-153
3-153
3-157
3·153
3·153
3-153

MAC210Al0
MAC210A 10FP
MAC212·4
MAC212·6
MAC212-B

MAC210Al0
MAC210A 10FP
MAC212A4
MAC212A6
MAC212AB

3-153
3-157
3-161
3-161
3·161

MAC212·10
MAC212A4
MAC212A4FP
MAC212A6
MAC212A6FP
MAC212AB

MAC212Al0
MAC212A4
MAC212A4FP
MAC212A6
MAC212A6FP
MAC212AB

3·161
3-161
3·165
3-161
3-165
3-161

MAC212A8FP
MAC212Al0
MAC212A 10FP
MAC21B·4
MAC218A4
MAC218A4FP

MAC212ABFP
MAC212Al0
MAC212A 10FP
MAC21BA4
MAC21BA4
MAC21BA4FP

3-165
3-161
3-165
3·169
3-169
3-172

MAC218·5
MAC21BA5
MAC218-6
MAC218A6
MAC21BA6FP
MAC21l>-7

MAC21BA6
MAC21BA6
MAC21BA6
MAC21BA6
MAC21BA6FP
MAC21BAB

3-169
3-169
3-169
3-169
3-172
3-169

MAC21BA7
MAC21B-B
MAC21BAB
MAC21BABFP
MAC21B·9
MAC21BA9

MAC21BAB
MAC21BAB
MAC21BAB
MAC21BABFP
MAC21BA10
MAC21BA10

3-169
3-169
3-169
3-172
3-169
3-169

MAC21B·l0
MAC21BA10
MAC21BA 10FP
MAC222-2
MACmAl

MAC21BA10
MAC21BA10
MAC218A 10FP
MAC21BA4
MAC21BA4

3-169
3-169
3·172
3·169
3·169

1111111 II
MOTOROLA THYRISTOR DEVICE DATA
5-10

Motorola
Similar
Replacement

p~~d~~%ter

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page

#

MAC222A2

MAC218A4

3-169

MAC222-3
MAC222A3
MAC222-4
MAC222A4
MAC222-5
MAC222A5

MAC218A4
MAC218A4
MAC218A4
MAC218A4
MAC218A6
MAC218A6

3-169
3-169
3-169
3-169
3-169
3-169

MAC222-6
MAC222A6
MAC222-7
MAC222A7
MAC222-8
MAC222A8

MAC218A6
MAC218A6
MAC218A8
MAC218A8
MAC218A8
MAC218A8

3-169
3-169
3-169
3-169
3-169
3-169

MAC222-9
MAC222A9
MAC222-1O
MAC222A 10
MAC223-1
MAC223Al

MAC218A 10
MAC218AlO
MAC218Al0
MAC218Al0
MAC223A4
MAC223A4

3-169
3-169
3-169
3-169
3-175
3-175

MAC223-2
MAC223A2
MAC223-3
MAC223A3
MAC223-4
MAC223A4

MAC223A4
MAC223A4
MAC223A4
MAC223A4
MAC223A4
MAC223A4

3-175
3-175
3-175
3-175
3-175
3-175

MAC223A4FP
MAC223-5
MAC223A5
MAC223-6
MAC223A6
MAC223A6FP

MAC223A4FP
MAC223A6
MAC223A6
MAC223A6
MAC223A6
MAC223A6FP

3-178
3-175
3-175
3-175
3-175
3-178

MAC223-7
MAC223A7
MAC223-8
MAC223A8
MAC223A8FP
MAC223-9

MAC223A8
MAC221A8
MAC223A8
MAC223A8
MAC223A8FP
MAC223Al0

3-175
3-175
3-175
3-175
3-178
3-175

MAC223A9
MAC223-10
MAC223Al0
MAC223A 10FP
MAC224-4
MAC224A4

MAC223A 10
MAC223Al0
MAC223Al0
MAC223A 10FP
MAC224A4
MAC224A4

3-175
3-175
3-175
3-178
3-181
3-181

MAC224-5
MAC224A5
MAC224-6
MAC224A6
MAC224-7
MAC224A7

MAC224A6
MAC224A6
MAC224A6
MAC224A6
MAC224A8
MAC224A8

3-181
3-181
3-181
3-181
3-181
3-181

MAC224-8
MAC224A8
MAC224-9
MAC224A9
MAC224-10
MAC224Al0

MAC224A8
MAC224A8
MAC224A 10
MAC224A 10
MAC224Al0
MAC224Al0

3-181
3-181
3-181
3-181
3-181
3-181

MAC228-2
MAC228A2
MAC228-3
MAC228A3
MAC228-4
MAC228A4

MAC228A4
MAC228A4
MAC228A4
MAC228A4
MAC228A4
MAC228A4

3-184
3-184
3-184
3-184
3-184
3-184

MAC228-5
MAC228A5
MAC228-6
MAC228A6
MAC228-7
MAC228A7

MAC228A6
MAC228A6
MAC228A6
MAC228A6
MAC228A8
MAC228A8

3-184
3-184
3-184
3-184
3-184
3-184

MAC228-8
MAC228A8

MAC228A8
MAC228A8

3-184
3-184

Motorola
Direct
Replacement

MAC228-9
MAC228A9
MAC228-10
MAC228AlO

MAC228Al0
MAC228Al0
MAC228Al0
MAC228Al0

3-184
3-184
3-184
3-184

MAC229A4
MAC229A6
MAC229A8
MAC229AlO
MAC310A4
MAC310A6

MAC229A4
MAC229A6
MAC229A8
MAC229Al0
MAC310A4
MAC310A6

3-186
3-186
3-186
3-186
3-188
3-188

MAC31OA8
MAC320-4
MAC320A4
MAC320A4FP
MAC320-6
MAC320A6

MAC31OA8
MAC320A4
MAC320A4
MAC320A4FP
MAC320A6
MAC320A6

3-188
3-190
3-190
3-194
3-190
3-190

MAC320A6FP
MAC320-8
MAC320A8
MAC320A8FP
MAC320-10
MAC320Al0

MAC320A6FP
MAC320A8
MAC320A8
MAC320A8FP
MAC320Al0
MAC320Al0

3-194
3-190
3-190
3-194
3-190
3-190

MAC320A 10FP
MAC515-4
MAC515A4
MAC515-5
MAC515A5
MAC515-6

MAC320A lOFP

Page #

MAC20A4
MAC20A4
MAC20A6
MAC20A6
MAC20A6

3-194
3-146
3-146
3-146
3-146
3-146

MAC515A6
MAC515-7
MAC515A7
MAC515-8
MAC515A8
MAC515-9

MAC20A6
MAC20A8
MAC20A8
MAC20A8
MAC20A8
MAC20Al0

3-146
3-146
3-146
3-146
3-146
3-146

MAC515A9
MAC515-10
MAC515Al0
MAC525-4
MAC525A4
MAC525-5

MAC20Al0
MAC20Al0
MAC20Al0
MAC25A4
MAC25A4
MAC25A6

3-146
3-146
3-146
3-146
3-146
3-146

MAC525A5
MAC525-6
MAC525A6
MAC525-7
MAC525A7
MAC525-8

MAC25A6
MAC25A6
MAC25A6
MAC25A8
MAC25A8
MAC25A8

3-146
3-146
3-146
3-146
3-146
3-146

MAC525A8
MAC525-9
MAC525A9
MAC525-10
MAC525Al0
MAC625-4

MAC25A8
MAC25Al0
MAC25Al0
MAC25Al0
MAC25Al0
MAC625-4

3-146
3-146
3-146
3-146
3-146
3-198

MAC625-6
MAC625-8
MAC635-4
MAC635-6
MAC635-8
MAC3010-4

MAC625-6
MAC625-8
MAC635-4
MAC635-6
MAC635-8
MAC301O-4

3-198
3-198
3-198
3-198
3-198
3-202

MAC3010-8
MAC3010-15
MAC3010-25
MAC301O-40
MAC3010-401
MAC3020-4

MAC3010-8
MAC3010-15
MAC3010-25
MAC3010-40
MAC3010-401
MAC3020-4

3-202
3-202
3-202
3-202
3-202
3-202

MAC3020-8
MAC3020-15
MAC3020-25
MAC3020-40
MAC3020-401
MAC3030-4

MAC3020-8
MAC3020-15
MAC3020-25
MAC3020-40
MAC3020-401
MAC3030-4

3-202
3-202
3-202
3-202
3-202
3-202

MOTOROLA THYRISTOR DEVICE DATA
5-11

Motorola
Similar
Replacement

p~~d~~%ter

•

p1~d~~~ter

•

Motorota
Direct
Replacement

Motorota
Similar
Replacement

Page #

MAC3030-B
MAC3030-15
MAC3030-25
MAC3030-40
MAC3030-401
MAC3040-4

MAC3030-B
MAC3030-15
MAC3030-25
MAC3030-40
MAC3030-401
MAC3040-4

3-202
3-202
3-202
3-202
3-202
3-202

MAC3040-8
MAC3040-15
MAC3040-25
MAC3040-40
MAC3040-401
MAC3060-4

MAC3040-8
MAC3040-15
MAC3040-25
MAC3040-40
MAC3040-401
MAC3060-4

3-202
3-202
3-202
3-202
3-202
-

MAC3060-B
MAC3060-15
MAC3060-25
MAC3060-40
MAC3060-401
MAC5571

MAC3060-B
MAC3060-15
MAC3060-25
MAC3060-40
MAC3060-401
2N5571

-

3-75

MAC5572
MAC5573
MAC5574
MAC406BB
MAC406B9
MAC40690

2N5572
2N5573
2N5574
T6420B
T6420D
T6420M

3-75
3-75
3-75
3-32B
3-32B
3-32B

MAC40795
MAC40796
MAC40799
MAC40BOO
MAC40B01
MAC40B02
MAC40B03

T4101M
T4111M
T4121B
T4121D
T4121M
2N6145
2N6146

3-75
3-75

MAC40B04
MBS4991
MBS4992
MCR22-2
MCR22-3
MCR22-4

2N6147
MBS4991
MBS4992
MCR22-2
MCR22-3
MCR22-4

3-75
3-207
3-207
3-211
3-211
3-211

MCR22-5
MCR22-6
MCR22-7
MCR22-B
MCR63-1
MCR63-2

MCR22-6
MCR22-6
MCR22-B
MCR22-B
MCR63-2
MCR63-2

3-211
3-211
3-211
3-211
3-215
3-215

MCR63-3
MCR63-4
MCR63-5
MCR63-6
MCR63-7
MCR63-B

MCR63-3
MCR63-4
MCR63-6
MCR63-6
MCR63-B
MCR63-B

3-215
3-215
3-215
3-215
3-215
3-215

MCR63-9
MCR63-10
MCR64-1
MCR64-2
MCR64-3
MCR64-4

MCR63-10
MCR63-10
MCR64-2
MCR64-2
MCR64-3
MCR64-4

3-215
3-215
3-215
3-215
3-215
3-215

MCR64-5
MCR64-6
MCR64-7
MCR64-B
MCR64-9
MCR64-10

MCR64-6
MCR64-6
MCR64-B
MCR64-B
MCR64-10
MCR64-10

3-215
3-215
3-215
3-215
3-215
3-215

MCR65-1
MCR65-2
MCR65-3
MCR65-4
MCR65-5
MCR65-6

MCR65-2
MCR65-2
MCR65-3
MCR65-4
MCR65-6
MCR65-6

3-215
3-215
3-215
3-215
3-215
3-215

MCR65-7
MCR65-B
MCR65-9

MCR65-B
MCR65-B
MCR65-10

3-215
3-215
3-215

p1~d~~~ter

Motorola
Direct
Replacement

Page #

MCR65-10
MCR67-1
MCR67-2

MCR65-10
MCR67-2
MCR67-2

3-215
3-217
3-217

MCR67-3
MCR67-6
MCR6B-l
MCR6B-2
MCR6B-3
MCR6B-6

MCR67-3
MCR67-6
MCR6B-2
MCR6B-2
MCR6B-3
MCR6B-6

3-217
3-217
3-217
3-217
3-217
3-217

MCR69-1
MCR69-2
MCR69-3
MCR69-6
MCR70-1
MCR7Q-2

MCR69-2
MCR69-2
MCR69-3
MCR69-6
MCR70-2
MCR70-2

3-217
3-217
3-217
3-217
3-221
3-221

MCR70-3
MCR70-6
MCR71-1
MCR71-2
MCR71-3
MCR71-6

MCR70-3
MCR70-6
MCR71-2
MCR71-2
MCR71-3
MCR71-6

3-221
3-221
3-221
3-221
3-221
3-221

MCR72-1
MCR72-2
MCR72-3
MCR72-4
MCR72-5

MCR72-2
MCR72-2
MCR72-3
MCR72-4
MCR72-6

3-225
3-225
3-225
3-225
3-225

MCR72-6
MCR72-7
MCR72-B
MCR100-3
MCR100-4
MCR100-5

MCR72-6
MCR72-B
MCR72-B
MCR100-3
MCR100-4
MCR100-6

3-225
3-225
3-225
3-22B
3-22B
3-22B

MCR10O-6
MCR1OO-7
MCR100-B
MCR10l
MCR102
MCR103
MCR104

MCR10O-6
MCR1OO-B
MCR100-B
MCR102
MCR102
MCR103
MCR100-3

3-22B
3-22B
3-228
3-230
3-230
3-230
3-22B

MCR106-1
MCR106-2
MCR106-3
MCR106-4
MCR106-5
MCR106-6

MCR106-2
MCR106-2
MCR106-3
MCR106-4
MCR106-6
MCR106-6

3-232
3-232
3-232
3-232
3-232
3-232

MCR106-7
MCR106-B
MCR107-1
MCR107-2
MCR107-3
MCR107-4

MCR106-B
MCR106-B
MCR106-2
MCR106-2
MCR106-3
MCR106-4

3-232
3-232
3-232
3-232
3-232
3-232

MCR107-5
MCR107-6
MCR107-7
MCR107-B
MCRl15
MCR120

MCR100-4
MCR100-4

MCR201
MCR202
MCR203
MCR204
MCR205
MCR206

MCR202
MCR202
MCR203
MCR204
MCR206
MCR206

3-235
3-235
3-235
3-235
3-235
3-235

MCR21B-2
MCR21B-3
MCR21B-4
MCR21B-5
MCR21B-6
MCR21B-7

MCR21B-2
MCR21B-3
MCR21B-4
MCR21B-6
MCR21B-6
MCR21B-B

3-239
3-239
3-239
3-239
3-239
3-239

MOTOROLA THYRISTOR DEVICE DATA
5-12

Motorola
Similar
Replacement

MCR106-6
MCR106-6
MCR106-B
MCR106-B

3-232
3-232
3-232
3-232
3-228
3-22B

p~~d~~~ter

Motorota
Direct
Replacement

Motorota
Similar
Replacement

Page #

MCR218-8
MCR218-9
MCR218-1O
MCR220-5
MCR220-7
MCR220-9

MCR218-8
MCR218-10
MCR218-10
2N6397
2N6398
2N6399

3-239
3-239
3-239
3-111
3-111
3-111

MCR221-5
MCR221-7
MCR221-9
MCR225-5
MCR225-7
MCR225-9

2N6403
2N6404
2N6405
2N6507
2N6508
2N6509

3-115
3-115
3-115
3-119
3-119
3-119

MCR225-12
MCR225FP-2
MCR225FP-4
MCR225FP-6
MCR225FP-8
MCR225FP-10

MCR225-12
MCR225FP-2
MCR225FP-4
MCR225FP-6
MCR225FP-8
MCR225FP-10

3-245
3-245
3-245
3-245
3-245

MCR264-2
MCR264-3
MCR264-4
MCR264-6
MCR264-8
MCR264-10

MCR264-2
MCR264-3
MCR264-4
MCR264-6
MCR264-8
MCR264-10

3-249
3-249
3-249
3-249
3-249
3-249

MCR264-12
MCR265-2
MCR265-3
MCR265-4
MCR265-6
MCR265-8

MCR264-12
MCR265-2
MCR265-3
MCR265-4
MCR265-6
MCR265-B

3-249
3-252
3-252
3-252
3-252
3-252

MCR265-10
MCR306-1
MCR306-2
MCR306-3
MCR306-4
MCR306-5

MCR265-10
2N6237
2N6237
2N6238
2N6239
2N6240

3-252
3-100
3-100
3-100
3-100
3-100

MCR306-6
MCR310-2
MCR310-3
MCR310-4
MCR310-6
MCR310-B

2N6240
MCR310-2
MCR310-3
MCR310-4
MCR31O-6
MCR310-8

3-100
-

MCR506-1
MCR506-2
MCR506-3
MCR506-4
MCR506-6
MCR506-8

MCR506-2
MCR506-2
MCR506-3
MCR506-4
MCR506-6
MCR506-8

3-255
3-255
3-255
3-255
3-255
3-255

p~~td~~~ter

Motorola
Direct
Replacement

MCR649AP7
MCR649AP8
MCR649AP9

MCR649AP8
MCR649AP8
MCR649AP10

MCR649AP10
MCR729-5
MCR729-6
MCR729-7
MCR729-8
MCR729-9

MCR649AP10
MCR729-5
MCR729-6
MCR729-7
MCR729-8
MCR729-9

MCR729-10
MCR808-1
MCR808-2
MCR808-3
MCR808-4
MCR808-5

MCR729-10

-

MCR525-4
MCR525-5
MCR525-6
MCR525-7
MCR525-8
MCR525-9

2N6506
2N6507
2N6507
2N6508
2N650B
2N6509

3-119
3-119
3-119
3-119
3-119
3-119

MCR525-10
MCR568-1
MCR568-2
MCR568-3
MCR568-6
MCR569-1

2N6509
MCR68-2
MCR68-2
MCR68-3
MCR68-6
MCR69-2

3-119
3-217
3-217
3-217
3-217
3-217

MCR569-2
MCR569-3
MCR569-6
MCR649AP1
MCR649AP2
MCR649AP3

MCR69-2
MCR69-3
MCR69-6
MCR649AP1
MCR649AP2
MCR649AP3

3-217
3-217
3-217
-

MCR649AP4
MCR649AP5
MCR649AP6

MCR649AP4
MCR649AP6
MCR649AP6

-

-

-

3-257
3-257
3-257
3-257
3-257
3-257
3-263
3-59
3-263
3-59
3-263

MCR808-6
MCR808-7
MCR808-8
MCR808-9
MCR808-10
MCR914-1

2N5166
MCR3818-8
2N5167
MCR3818-10
2N2647
2N1595

3-59
3-263
3-59
3-263
3-19
3-6

MCR914-2
MCR914-3
MCR914-4
MCR914-5
MCR914-6
MCR1308-1

2N1595
2N1596
2N1597
2N1599
2N1599

3-6
3-6
3-6
3-6
3-6
3-263

2N5168

3-59
3-263
3-59
3-263
3-59
3-263

MCR1308-8
MCR1308-9
MCR1330
MCR1350
MCR1604-1
MCR1604-2

MCR3918-2
MCR3918-3
MCR3918-6
MCR3918-8
MCR3918-10

MCR1604-3
MCR1604-4
MCR1604-5
MCR1604-6
MCR1604-7
MCR1604-8

2N5169
2N5170
2N5170
2N6027
2N6028
2N4186
2N4184

3-59
3-263
3-79
3-79
3-27
3-27

2N4185
2N4186
2N4188
2N4188
2N4190
2N4190

3-27
3-27
3-27
3-27
3-27
3-27

MCR1718-5
MCR1718-6
MCR1718-7
MCR1718-8
MCR1906-1
MCR1906-2

MCR1718-5
MCR1718-6
MCR1718-7
MCR1718-8
MCR1906-2
MCR1906-2

3-259
3-259
3-259
3-259
3-261
3-261

MCR1906-3
MCR1906-4
MCR1906-5
MCR1906-6
MCR1906-7
MCR1906-8

MCR1906-3
MCR1906-4
MCR1906-6
MCR1906-6
MCR1906-8
MCR1906-8

3-261
3-261
3-261
3-261
3-261
3-261

MCR2305-1
MCR2305-2
MCR2305-3
MCR2305-4
MCR2305-5
MCR2305-6

2N4168
2N4168
2N4169
2N4170
2N4172
2N4172

3-27
3-27
3-27
3-27
3-27
3-27

MCR2305-7
MCR2305-8
MCR2315-1
MCR2315-2
MCR2315-3
MCR2315-4

2N4174
2N4174

3-27
3-27
3-27
3-27
3-27
3-27

2N4168
2N4168
2N4169
2N4170

MOTOROLA THYRISTOR DEVICE DATA
5-13

Page #

MCR3818-2
2N5164
MCR3818-3
2N5165
MCR3818-6

MCR1308-2
MCR1308-3
MCR1308-4
MCR1308-5
MCR1308-6
MCR1308-7

-

Motorola
Similar
Replacement

•

p~~td~~~ter
MCR2315-5
MCR2315-6
MCR2315-7
MCR2315-8
MCR2604-1
MCR2604-2

•

Motorota
Direct
Replacemenl

Motorola
Similar
Replacement

2N4172
2N4172
2N4174
2N4174
2N4184
2N4184

Page #

3-27
3-27
3-27
3-27
3-27
3-27

MCR2604-3
MCR2604-5
MCR2604-6
MCR2604-7
MCA2604-8
MCA2604L 1

2N4184

MCA2604L2
MCA2604L3
MCA2604L4
MCA2604L5
MCA2604L6
MCA2604L7

2N4184
2N4185
2N4186
2N4188
2N4188
2N4190

3-27
3-27
3-27
3-27
3-27
3-27

MCA2604L8
. MCR2818-1
MCA2818-2
MCR2818-3
MCR2818-4
MCA2818-5

2N4190
MCR3818-2
MCR3818-2
MCA3818-3
MCR3818-4
MCR3818-6

3-27
3-263
3-263
3-263
3-263
3-263

MCA2818-6
MCR2818-7
MCR2818-8
MCR2835-1
MCR2835-2
MCR2835-3

MCR3818-6
MCA3818-8
MCR3818-8

3-263
3-263
3-263
3-21
3-21
3-21

2N4185
2N4188
2N4188
2N4190
2N4190

2N3870
2N3870
2N3870

3-27
3-27
3-27
3-27
3-27
3-27

MCR2835-4
MCR2835-5
MCR2835-6
MCR2835-7
MCA2835-8
MCR2918-1

MCA3918-2

MCR2918-2
MCR2918-3
MCA2918-4
MCA2918-5
MCR2918-6
MCA2918-7

MCR3918-2
MCR3918-3
MCR3g18-4
MCA3918-6
MCR3918-6
MCA3918-8

3-263
3-263
3-263
3-263
3-263
3-263

MCR2918-8
MCA2935-1
MCA2935-2
MCA2935-3
MCA2935-4
MCA2935-5

MCR3g18-8
2N3896
2N3896
2N3896
2N3897
2N3898

3-263
3-21
3-21
3-21
3-21
3-21

MCA2935-6
MCA2935-7
MCA2935-8
MCR3000-1C
MCR3000-2
MCR3000-3C

2N3898
2N3899
2N3899

3-21
3-21
3-21
3-239
3-239
3-239

MCR3000-4
MCA3000-SC
MCR3000-6
MCR3000-7C
MCA3000-8
MCA3000-9C

MCR218-4

MCR218-2

2N3871
2N3872
2N3872
2N3873
2N3873

MCR218-2
MCR218-3

MCR218-6
MCR218-8

MCR218-6
MCA218-8
MCR218-10

MCR3000-10C
MCA3818-1
MCR3818-2
MCR3818-3
MCR3818-4
MCR3818-5

MCR3818-2
MCR3818-2
MCR3818-3
MCA3818-4
MCR3818-6

MCA3818-6
MCR3818-7
MCA3818-8
MCR3818-9

MCA3818-6
MCR3818-8
MCR3818-8
MCR3818-10

MCR218-10

3-21
3-21
3-21
3-21
3-21
3-263

3-239
3-239
3-239
3-239
3-239
3-239
3-239
3-263
3-263
3-263
3-263
3-263
3-263
3-263
3-263
3-263

p~~d~~~ter

Motorola
Direcl
Replacement

MCR3818-10
MCR3835-1

MCR3818-10
MCR3835-2

3-263
3-268

MCR3835-2
MCR3835·3
MCA3835·4
MCR3835-5
MCR3835-6
MCR3835-7

MCR3835·2
2N3870
2N3871
2N3872
2N3872
MCR3835·8

3·268
3-21
3·21
3·21
3-21
3·268

MCR3835-8
MCR3835·9
MCA3835-10
MCR3918-1
MCA3918·2
MCA3918-3

MCR3835-8
MCR3835·10
MCR3835·10
MCR3918·2
MCR3918·2
MCR3918·3

3-268
3·268
3·268
3-263
3·263
3·263

MCR3918·4
MCR3918·5
MCR3918-6
MCR3918-7
MCR3918·8
MCR3918·9

MCR3918·4
MCR3918·6
MCR3918·6
MCR3918·8
MCR3918·8
MCR3918·10

3·263
3·263
3·263
3·263
3·263
3·263

MCR3918·1O
MCR3935·1
MCR3935·2
MCR3935-3
MCR3935-4
MCR3935·5

MCR3918-10
MCR3935·2
MCR3935·2
MCR3935·3
MCR3935·4
MCR3935·6

3-263
3·268
3·268
3-268
3-268
3·268

MCR3935·6
MCR3935-7
MCR3935·8
MCR3935·9
MCR3935·10
MCR4018·3

MCR3935·6
MCR3935·8
MCR3935-8
MCR3935·10
MCR3935-10

3·268
3-268
3-268
3-268
3-268
3·96

2N6167

MCR4018·4
MCR4018-5
MCR4018-6
MCR4018-7
MCR4018-8
MCR4035·3

2N6168
2N6169
2N6169
2N6170
2N6170
2N6171

MCR4035-4
MCR4035-5
MCR4035·6
MCR4035·7
MCR4035-8
MGT01000

2N6172
2N6173
2N6173
2N6174
2N6174
MGT01000

Page #

3·96
3-96
3-96
3-96
3·96

3-271

MGT01000M
MGT01200
MGT01200M
MK1V115
MK1V125
MKlV135

MGT01200
MGT01200
MK1V115
MK1V125
MK1V135

MK1V240
MK1V260
MK1V270
MKP9V120
MKP9V130
MKP9V240

MK1V240
MK1V260
MK1V270
MKP9V120
MKP9V130
MKP9V240

3-282
3-282
3·282
3·285
3·285
3-285

MKP9V260
MKP9V270
MMBPU131
MMBPU6027
MMBPU6028
MMBS5060

MKP9V260
MKP9V270
MMBPU131
MMBPU6027
MMBPU6028
MMBS5060

3-285
3·285

MMBS5061
MMBS5%2
MPT20
MPT24
MPT28
MPT32

MMBS5061
MMBS5062

MOTOROLA THYRISTOR DEVICE DATA
5-14

Motorola
Similar
Replacement

MGT01000

3-271
3-271
3-271
3-279
3-279
3-279

3·288

MBS4991
MBS4991
MBS4991
MBS4991

3·288
3·288
3-207
3·207
3-207
3-207

p~~d~~~ter

Motorota
Direct
Replacement

MPT36
MPU131
MPU132
MPU133
MPU231
MPU232

2N6027
2N6028
2N6028

MPU233
MPU6027
MPU6028
MU10
MU20
MU970

2N6027
2N6028
MU10
MU20

MU971
MU2646
MU4891
MU4892
MU4893
MU4894

Motorola
Similar
Replacement
MBS4991

2N6116
2N6117
2N6118

2N2646
2N2647
2N2646
MU4891
MU4892
MU4893
MU4894

p~~d~~~ter

Page #
3-207
3-79
3-79
3-79
3-88
3-88
3-88
3-79
3-79
3-79
3-79
3-19

MUS4987
MUS4988
P0100BA
P01000A
P0100MA
P0102AA

MBS4991
MBS4992
MCR100-4
MCR100-6
MCR100-8
MCR100-4

3-207
3-207
3-228
3-228
3-228
3-228

P0102BA
P0102CA
P01020A
P0103AO
P0103BA
P0103BO

MCR100-4
MCR100-6
MCR100-6
2N2324
MCR100-4
2N2326

3-228
3-228
3-228
3-14
3-228
3-14

PO 103C 0
P0103DA
P010300
P0103MA
0200E3
0200E4

2N2329
MCR100-6
2N2329
MCR100-B
MAC97-4
MAC97-4

3-14
3-228
3-14
3-228
3-149
3-149

0201E3
0201E4
0400E3
0400E4
02001L3
02001L4

MAC97-4
MAC97-4
MAC97-6
MAC97-6
T2322B
T2322B

3-149
3-149
3-149
3-149
3-316
3-316

02001M3
02001M4
02003L3
02003L4
02003M3
02003M4
02003P3
02003P4
02004F31
02004F41
02004L3
02004L4

T2322B
2N6071
2N6071A
2N6071A
2N6071A
2N6071
2N6071A
2N6071
2N6071A
2N6071
2N6071A
2N6071A

3-316
3-83
3-83
3-83
3-83
3-83
3-83
3-83
3-83
3-83
3-83
3-83

02006F31
02006F41
02006L4
02006L5
02006R4
02008F41

2N6071
2N6071
T2500FP
SC141B
T2500B
T2800B

3-83
3-83
3-320
3-309
3-318
3-222

02008L4
02008L4
02008L5
02008R4
0201OF41
02010L4

T2800B
MAC218A4FP
MAC218A4
T2800B
SC146B
MAC210A4FP

3-322
3-172
3-169
3-322
3-309
3-157

02010L5
Q2010R4
02012L5
02012R5

SC146B
SC146B
MAC212A4FP
2N6346A

3-309
3-309
3-165
3-103

Page #

SC251B
SC250B

3-312
3-312

02015L5
02015R5
02025
020250
02025G
Q2025H

MAC15A4FP
MAC15A4
SC261B
SC260B3
SC261B
SC260B

3-142
3-138
3-314
3-314
3-314
3-314

MAC223A4FP
MAC25A4
T6401B
T6420B
MACSOA4

3-178
3-146
3-175
3-330
3-328
3-146

04001L3
04001 L4
04001M3
04001M4
04003L3
04003L4

2N60738
T23220
2N6073A
2N6073
2N6073A
2N6073A

3-83
3-316
3-83
3-83
3-83
3-83

04003M3
04003M4
04003P3
04003P4
04004F31
04004F41

2N6073A
2N6073
2N6073A
2N6073
2N6073A
2N6073

3-83
3-83
3-83
3-83
3-83
3-83

04004L3
04004L4
04006F41
04006L4
04006L5
04006A4

2N6073A
2N6073A
2N6073
T25000
SC1410
T25000

3-83
3-83
3-83
3-318
3-309
3-318

04008F41
04008L4
04008L4A
04008L5
04008R4
04010F41

T28000
MAC218A6FP
T28000
MAC218A6
T28000
SC1460

3-322
3-172
3-322
3-169
3-322
3-309

04010L4
04010L5
04010R4
04012L5
04012A5
Q4015G
04015H
04015L5
04015A5
04025
040250
04025G

MAC210A6FP
SC1460
SC1460
MAC212A6FP
2N6347A
SC2510
SC2500
MAC15A6FP
MAC15A6
SC2610
SC26003
SC261D

3-157
3-309
3-309
3-165
3-107
3-312
3-312
3-142
3-138
3-314
3-314
3-314

04025H
Q4025L6
04025P
04025R5
04040
040400

SC2600
MAC223A6FP
MAC25A6
T64010
T64200

3-314
3-178
3-146
3-175
3-330
3-328

04040P
05004F41
05004L4
05006F41
05006L4
05006L5

MAC50A6
2N6075
2N6074A
T2500M
T2500M
SC141M

3-146
3·83
3·83
3-318
3·318
3·309

05006R4
05008F41
05008L4
05008L4A
05008L5
Q5008A4

T2500M
T28000
T2800M
T2800M
MAC218A8
T2800M

3-318
3-322
3·322
3-322
3·169
3-322

05010F41

SC146M

3·309

MAC223A4

MAC223A6

MOTOROLA THYRISTOR DEVICE DATA
5-15

Motorola
Similar
Replacement

02015G
02015H

Q2025L5
02025P
02025A5
02040
020400
02040P

3-19
3-19
3-303
3-303
3-303
3-303

Motorola
Direct
Replacement

p~;'d~~~ter

Motorota
Similar
Replacement

Page #

05010L4
05010L5
05010R4
05012L5
05012R5

SC146M
SC146M
SC146M
2N6348A
2N6348A

3-309
3-309
3-309
3-107
3-107

05015G
05015H
05015L5
05015R5
05025
05025G

SC251M
SC2SOM
MAC15A8
MAC15A8
SC261M
SC261M

3-312
3-312
3-138
3-138
3-314
3-314

05025H
05025L5
05025P
05025R5
05040
050400

SC260M
MAC223A8
MAC25A8
MAC223A8
T6401M
T6420M

3-314
3-175
3-146
3-175
3-330
3-328

05040P
06004F41
06004L4
06006F51
06006L5
06006R5

MAC50A8
2N6075
2N6074A
2N6075
SC141M
SC141M

3-146
3-83
3-83
3-83
3-309
3-309

06008F51
06008L5
06008L5A
Q6008R5
06010F51
06010L5

T2802M
MAC218A8FP
MAC218A8
MAC218A8
SC146M
MAC210A8FP

3-322
3-172
3-169
3-169
3-309
3-157

06010R5
06012L5
06012R5
06015G
06015H
06015L5

SC146M
MAC212A8FP
2N6348A
SC251M
SC250M
MAC15A8FP

3-309
3-165
3-103
3-312
3-312
3-142

06015R5
06025
060250
06025G
06025H
06025L5

MAC15A8
SC261M
SC261M
SC261M
SC260M
MAC223A8FP

3-138
3-314
3-314
3-314
3-314
3-178

MAC25A8
T6400M
T6420M
MACSOA8
SC146N

3-146
3-175
3-328
3-328
3-146
3-309

08010R5
08012L5
08012R5
08015L5
08015R5
S0301L

SC146N
2N6349A
2N6349A
MAC15A10
MAC15A 10
MCR106-2

3-309
3-107
3-107
3-138
3-138
3-232

S0301LS1
S0301LS2
S0301LS3
S0301M
S0301MS1
S0301MS2

MCR106-2
MCR106-2
MCR106-2

3-232
3-232
3-232
3-6
3-37
3-14

06025P
06025R5
06040
060400
06040P
08010L5

•

Motorota
Direct
Replacement

S0301MS3
S0303L
S0303LS1
S0303LS2
S0303LS3
S0303MS2
S0303MS3
S0306FS21
S0306FS31
S0306L

MAC223A8

2N1595
2N4213
2N2323
MCR1906-2

p~;'d~~~ter

2N6237
MCR72-2
MCR72-2
S2800F

3-100
3-225
3-225
3-305

Page #

MCR72-2
MCR72-2

3-225
3-225

S0308F1
S0308F3
S0308FS4
S0308FS21
S0308FS31
S0308L

MCR218-2
MCR218-2
MCR72-2
MCR72-2
MCR72-2
S2800F

3-239
3-239
3-225
3-225
3-225
3-305

S0308LS2
S0308LS3
S0308R
S0310F1
S0310L
S0312L

MCR72-2
MCR72-2
S2800A
2N6394
2N6394
2N6394

3-225
3-225
3-305
3-111
3-111
3-111

S0312R
S0315H
S0315L
S0316R
S0320L
S03250

2N6394
2N1843
2N6400
2N6400
2N6504
C230F3

3-111
3-11
3-115
3-115
3-119
3-135

S0501LS1
S0501LS2
S0501LS3
S0501M
S0501MS1
S0501MS2

3-261
2-232
3-232
3-232
3-232
3-100

Motorola
Similar
Replacement

S0306LS2
S0306LS3

S0325H
S0325R
S03350
S0335G
S0335H
S0501L

MCR106-2
MCR106-2
MCR106-2
MCR106-2
2N6237

Motorola
Direct
Replacement

S0501MS3
S0503L
S0503LS1
S0503LS2
S0503LS3
S0503MS2

2N682
MCR3835-2
MCR3935-2

3-2
3-119
3-133
3-268
3-268
3-232

2N6504
C228A
MCR106-2

2N1595
2N4213
2N2323

MCR106-2
MCR106-2
MCR106-2

3-232
3-232
3-232
3-6
3-37
3-14

MCR1906-2
MCR106-2
MCR106-2
MCR106-2
MCR106-2
2N6238

3-261
3-232
3-232
3-232
3-232
3-100

S0503MS3
S0505FS21
S0505FS31
S0506FS21
S0506FS31
S0506L

2N6238
MCR72-2
MCR72-2
MCR72-2
MCR72-2
S2800A

3-100
3-225
3-225
3-225
3-225
3-305

S0506LS2
S0506LS3
S0508F1
S0508F3
S0508FS31
S0508L

MCR72-2
MCR72-2
MCR218-2
MCR218-2
MCR72-2
S2800A

3-225
3-225
3-239
3-239
3-225
3-305

S0508LS2
S0508LS3
S0508R
S0508S21
S0510L
S0512L

MCR72-2
MCR72-2
S2800A
MCR72-2
2N6394
2N6394

3-225
3-225
3-305
3-225
3-111
3-111

S0512R
S0515L
S0516R
S0520L
S05250
S0525H

2N6394
2N6400
2N6400
2N6504
C230F3
2N682

3-111
3-115
3-115
3-119
3-135
3-2

S05350
S0535G
S0535H
S106A
S106B
S106C

2N3870
2N3870
C106A1
C106B1
C106C1

C228A3

3-133
3-21
3-21
3-125
3-125
3-125

mIP.I!•••••
•

_ _.&.ll'lWS.M!C'4ib~!'k;MfLti~lmL_il1\~IWI~M\1t.M.~U.._ _ilI!!!ll!'"1-!lm!~~IIltI1I1I~I.Irtl·aoffiii\~·~·

~

~~&~~~

MOTOROLA THYRISTOR DEVICE DATA
5-16

p~~td~~%ter
51060
S106E
S106F
S106M
S107A
S107B

Motorola
Direct
Replacement
Cl0601
Cl06El
Cl06Fl
Cl06M

S107C
51070
5107E
S107F
5107M
51001L
51001LSI
51001LS3
S1001M
S1001M51
51001M52
51001M53

Motorola
Similar
Replacement

Page

Cl06A
Cl06B

3-125
3-125
3-125
3-125
3-125
3-125

Cl060
Cl060
Cl06A
Cl06F
Cl06M
MCR106-3

3-125
3-125
3-125
3-125
3-125
3-232

MCR106-3
MCR106-3

3-232
3-232
3-6
3-37
3-14
3-261

2N1596
2N4214
2N2324
MCR1906-3

51003L
51003L51
51003L52
S1003LS3
51003M52
51003M53

MCR106-3
MCR106-3
MCR106-3
MCR106-3
2N6238
2N6238

3-232
3-232
3-232
3-232
3-100
3-100

S1006F521
51006F531
51006L
S1006LS2
S 1006L53
S1008Fl

MCR72-3
MCR72-3
S2800A
MCR72-3
MCR72-3
MCR218-3

3-225
3-225
3-305
3-225
3-225
3-239

SlO08F3
S1008FS21
S1008FS31
S1008L
S1008LS2
51008LS3

MCR218-3
MCR72-3
MCR72-3
MCR218-3
MCR72-3
MCR72-3

3-239
3-225
3-225
3-239
3-225
3-225

S1008R
S1010Fl
S1010L
S1012L
S1012R
S1015L

S2800A
2N6395
2N6395
2N6395
2N6395
2N6401

3-305
3-111
3-111
3-111
3-111
3-115

S1016R
S1020L
S10250
S1025H
S1025R
510350

2N6401
2N6505
C230A3
2N6505
C228A3

3-115
3-115
3-135
3-2
3-119
3-133

MCR106-4
MCR106-4
MCR106-4
MCR106-4

3-21
3-21
3-232
3-232
3-232
3-232

MCR1906-4
MCR106-4
MCR106-4

3-6
3-37
3-14
3-261
3-232
3-232

52003L52
52003L53
52003M52
52003M53
52006F521
52006F531

MCR106-4
MCR106-4
2N6239
2N6239
MCR72-4
MCR72-4

3-232
3-232
3-100
3-100
3-225
3-225

52006L
S2006L52
52006L53

52800B
MCR72-4
MCR72-4

3-305
3-225
3-225

2N683

S1035G
S1035H
S2001L
52001LSI
S2001 LS2
S2001LS3

2N3870
2N3896

S2001M
S2001M51
52001M52
52001M53
52003L
52003L51

2N1597
2N4216
2N2326

p~~td~~%ter

#

Motorola
Direct
Replacement

MCR218-4
MCR218-4
MCR72-4

3-239
3-239
3-225

52008F531
52008L52
S2008L53
S2008R
52010L
52012L

MCR72-4
MCR72-4
MCR72-4
52800B
2N6396
2N6396

3-225
3-225
3-225
3-305
3-111
3-111

52012R
52015L
52016R
52020L
520250
52025H

2N6396
2N6402
2N6402
2N6506
C230B3
2N685

3-111
3-115
3-115
3-119
3-135
3-2

S2025R
520350
52035G
52035H
52060A
52060B

2N6506
C228B3
2N3871
2N3897
2N6238
2N6239

3-119
3-133
3-21
3-21
3-100
3-100

52060C
520600
52060E
S2060F
S2060M
520600

MCR106-6
2N6240
MCR106-8
2N6237
2N6241
2N6237

3-232
3-100
3-232
3-100
3-100
3-100

52060Y
52061A
52061B
52061C
520610
52061E

2N6237
2N6238
2N6239
MCR106-6
2N6240
MCR106-8

3-100
3-100
3-100
3-232
3-100
3-232

52061F
S2061M
520610
S2061Y
52062A
S2062B

2N6237
2N6241
2N6237
2N6237
2N6238
2N6239

3-100
3-100
3-100
3-100
3-100
3-100

S2062C
S20620
52062E
52062F
52062M
S20620

MCR106-6
2N6240
MCR106-8
2N6237
2N6241
2N6237

3-232
3-100
3-232
3-100
3-100
3-100

52062Y
52600B
526000
52600M
52610B
S26100

2N6237

52710M
S2800A
52800B
52800C
528000
52800E
52800F
52800M
52800N
528005
54001L
54001LSI

C122Bl
C12201
C122Ml
52800B
528000

3-100
3-128
3-128
3-128
3-305
3-305

52800M
52800B
528000
52800M
52800B
528000

3-305
3-305
3-305
3-305
3-305
3-305

52800M

3-305
3-305
3-305
3-305
3-305
3-305

52800A
52800B
528000
528000
52800M
52800F
S2800M
52800N
52800N

MOTOROLA THYRISTOR DEVICE DATA
5-17

Page #

S2008Fl
52008F3
52008,521

52610M
52620B
526200
52620M
52710B
527100

,

Motorola
Similar
Replacement

MCR106-6
MCR106-6

3-305
3-305
3-305
3-305
3-232
3-232

•

p~~d~~~ter
S4001 LS2
S4001LS3
S4001M
S4001MSI
S4001MS2
S4001MS3

Motorola
Direct
Replacement

2N1599
2N4219
2N2329
MCR1906-6

S4003L
S4003LS 1
S4003LS2
S4003LS3
S4003MS2
S4003MS3

MCR106-6
MCRI06-6

MCR106-6
MCR106-6
MCR106-6
MCR106-6
2N6240
2N6240

Page #
3-232
3-232
3-6
3-37
3-14
3-261
3-232
3-232
3-232
3-232
3-100
3-100

S40068
S4006FS21
S4006FS31
S4006L
S4006LS2
S4006LS3

MCR729-6
MCR72-6
MCR72-6
S28000
MCR72-6
MCR72-6

3-257
3-225
3-225
3-305
3-225
3-225

S4008F 1
S4008F3
S4008FS21
S4008FS31
S4008L
S4008LS2

MCR218-6
MCR218-6
MCR72-6
MCR72-6
MCR218-6
MCR72-6

3-239
3-239
3-225
3-225
3-239
3-225

S4008LS3
S4008R
S4010L
S4012L
S4012R
S4015L

MCR72-6
S28000
2N6397
2N6397
2N6397
2N6403

3-225
3-305
3-111
3-111
3-111
3-115

S4016R
S4020L
S40250
S4025H
S4025R
S40350

2N6403
2N6507
C23003
2N6507
C22803

3-115
3-119
3-135
3-2
3-119
3-133

MCR729-7
MCR218-8
MCR649-8
MCR3835-8

3-21
3-21
3-257
3-239
3-268

S4035G
S4035H
S5006B
S5008L
S5025C
S5025G
S5025H
S5035G
S5035H
S6000C
S6000E
S6000S

•

Motorola
Similar
Replacement

2N688

2N3872
2N3898

MCR3935-8
MCR3835-8
MCR3935-8
2N6397
2N6398
2N6399

3-268
3-268
3-268
3-111
3-111
3-111

S6001L
S6003L
S6006L
S6008F
S6008Fl
S6008F3

MCR106-8
MCR106-8
S2800M
MCR218-8
S2800M
MCR218-8

3-232
3-232
3-305
3-239
3-305
3-239

S6008L
S6008R
S6010L
S6012L
S6012R
S6015L

S2800M
S2800M
2N6398
2N6398
2N6398
2N6404

3-305
3-305
3-111
3-111
3-111
3-115

S6016R
S6020L
S60250
S6025H
S6025R
S60350

2N690

2N6404
2N6508
C230M3

3-115
3-119
3-135
3-2
3-119
3-133

S6035G
S6035H
S6100C

2N3873
2N3899
2N6403

2N6508
C228M3

3-21
3-21
3-115

p~~d~~~ter

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

S6100E
S6100S
S6200A

2N6404
2N6405
56200A

3-115
3-115

S62008
562000
S6200M
56210A
S62108
S62100

562008

3-307

S6210M
56220A

562208

562200
56220M
S6420A

562000
56200M
56210A
56210B
562100

3-307

3-307

3-307
3-307
3-307

56210M
S6220A
562208
562200
S6220M

564200
S6420M
S6493M
58015L
S8016R
S8020L
S8025R
SC92A
SC928
5C920
SC92F
SC1298

3-307

2N6171

3-307
3-307
3-307
3-307
3-307
-

2N6172
2N6174
MCR1718-8
2N6405
2N6405
2N6509

3-259
3-115
3-115
3-119

2N6509

3-119
3-149
3-149
3-149
3-149
3-175

MAC97A4
MAC97A4
MAC97A6
MAC97A4
MAC223A4

5C1290
5C129E
5C129M
5C136A
SC1368
SC136C

2N6070
2N6071
2N6073

5C1360
SC136E
5C136M
SC141A
SC1418
SC141C

2N6073
2N6075
2N6075
SC1418
SC141B
SC1410

SC1410
SC141E
SC141M
5C141N
SC143B
SC1430

SC1410
5C141M
SC141M
SC141N
SC1438
SC1430

SC143E
SC143M
SC146A
5C1468
SC146C
SC1460

5C143M
SC143M
SC1468
SC1468
SC1460
SC1460

SC146E
SC146F
SC146M
5C146N
SC146S
SC1498

SC146M
SC,1468
SC146M
SC146N
SC146N
SC149B

SC1490
SC149F
SC149M
SC151B
SC1510
SC151E

SC1490
SC149B
SC149M

SC151M
SC1608
SC1600
SC160E
SC160M
SC240B

MAC223A6
MAC223A8
MAC223A8

3-175
3-175
3-175
3-83
3-83
3-83
3-83
3-83

3-309

3-,)~~

3-309
3-309
3-309
3-309
3-309
-

3-309
3-309
3-309

3-309
3-309

3-309
3-309
3-309
3-309
-

MACI5A4
MAC15A6
MAC15A8

3-138
3-138
3-138

MAC15A8
MAC25A4
MAC25A6
MAC25A8
MAC25A8
T4121B

3-138
3-146
3-146
3-146
3-146
3-71

_1111 . .all i Ilr_ _ ~_"'I.IIIII.IIIl:iI.1IiJG"
MOTOROLA THYRISTOR DEVICE DATA
5-18

'.11.1

p~~d~~~ter

Motorota
Direct
Replacement

SC240D
SC240E
SC240M
SC2416
SC24lD
SC241E

Motorola
Similar
Replacement

Page

#

T412lD
T4121M
T4121M
T41016
T410lD
T4101M

3-71
3-71
3-71
3-71
3-71
3-71

T4101M

3-71
-

SC241M
SC245A
SC2456
SC245C
SC245D
SC245E

SC2456
SC2456
SC245D
SC245D
SC245M

SC245F
SC245M
SC245N
SC245S
SC246A
SC2468

SC2458
SC245M
SC245N
SC245N
SC2466
SC2468

-

SC246C
SC246D
SC246E
SC246F
SC246M
SC246N

SC246D
SC246D
SC246M
SC246B
SC246M
SC246N

-

SC246S
SC250A
SC2508
SC25083
SC250C
SC250D

SC246N
SC2508
SC250B
SC25083
SC250D
SC250D

3-312
3-312
3-312
3-312
3-312

SC250D3
SC250E
SC250E3
SC250F
SC250M
SC250M3

SC25003
SC250M
SC250M3
SC2506
SC250M
SC250M3

3-312
3-312
3-312
3-312
3-312
3-312

SC250N
SC250S
SC251A
SC251B
SC251C
SC251D

SC250N
SC250N
SC251B
SC251B
SC251D
SC2510

3-312
3-312
3-312
3-312
3-312
3-312

SC251E
SC251F
SC251M
SC251N
SC251S
SC260A

SC251M
SC2518
SC251M
SC251N
SC251N
SC260B

3-312
3-312
3-312
3-312
3-312
3-314

SC2608
SC26083
SC260C
SC260D
SC260D3
SC260E

SC2608
SC26083
SC260D
SC260D
SC260D3
SC260M

3-314
3-314
3-314
3-314
3-314
3-314

SC260E3
SC260F
SC260M
SC260M3
SC261A
SC2618

SC260M3
SC2606
SC260M
SC260M3
SC2618
SC2618

3-314
3-314
3-314
3-314
3-314
3-314

SC261C
SC261D
SC261E
SC261F
SC261M
SC2658

SC261D
SC2610
SC261M
SC2616
SC261M
2N5444

3-314
3-314
3-314
3-314
3-314
3-67

2N5445
2N5446
2N5446

3-67
3-67
3-67

SC265D
SC265E
SC265M

-

-

pi~td~~~ter

Motorot.
Direct
Replacement

Motorol.
Similar
Replacement

Page #

SC2668
SC266D
SC266E

2N5441
2N5442
2N5443

3-67
3-67
3-67

SC266M
SISC122C
SISC122D
SISC122E
SISC122M
SISC122N

2N5443
C122Dl
C122D1
C122Ml
C122M1
C122Nl

3-67
3-128
3-128
3-128
3-128
3-128

SISC141C
SISC141D
SISC141E
SISC141M
SISC141N
SISC141S

SC141D
SC141D
SC141M
SC141M
SC141N
SC141N

3-309
3-309
3-309
3-309
3-309
3-309

SISC143C
SISC143D
SISC143E
SISC143M
SISC143N
SISC143S

MAC218A6
MAC218A6
MAC218A8
MAC218A8
MAC218A10
MAC218Al0

3-169
3-169
3-169 .
3-169
3-169
3-169

SISC146C
SISC146D
SISC146E
SISC146M
SISC146N
SISC146S

SC146D
SC146D
SC146M
SC146M
SC146N
SC146N

3-309
3-309
3-309
3-309
3-309
3-309

SISC149C
SISC149D
SISC149E
SISC149M
SISC149N
SISC149S

2N6347A
2N6347A
2N6348A
2N6348A,
2N6349A
2N6349A

3-103
3-103
3-103
3-103
3-103
3-103

Tl06Al
Tl0681
Tl06Cl
Tl06Dl
Tl06El
Tl06Fl

Cl06A
C1068
Cl06D
Cl06D
Cl06M
Cl06F

3-125
3-125
3-125
3-125
3-125
3-125

Tl06Ml
Tl0601
Tl06Yl
Tl07A 1
Tl0781
Tl07Cl

Cl06M
Cl06F
Cl06F
Cl0GA
Cl066
Cl060

3-125
3-125
3-125
3-125
3-125
3-125

Tl07Dl
Tl07El
Tl07Fl
Tl07Ml
Tl0701
TlO7Y1

Cl06D
C106M
Cl06F
Cl06M
Cl06F
Cl06F

3-125
3-125
3-125
3-125
3-125
3-125

T1145AO
Tl145A 1
Tl145A2
Tl145A3
T1145A4
T230lA

2N1595
2N1596
2N1597
2N1599
2N1599
2N60708

T23018
T2301C
T23010
T2301E
T2301F
T2301M

2N60708
2N60738
2N60738
2N60756
2N60758
2N60756

T2301PA
T2301P8
T2301PC
T2301PD
T2301PE
T2301PF

2N60706
2N60708
2N60738
2N6073B
2N60756
2N60756

3-6
3-6
3-6
3-6
3-6

-

3-83
3-83
3-83
3-83
3-83

-

3-83
3-83
3-83
3-83

•

~'_~:.':;'~';~.?ri~~""""'II'II_117n
MOTOROLA THYRISTOR DEVICE DATA
5-19

Industr~

Part Hum er

•

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

T2301PM
T2302A
T2302B
T2302C
T23020
T2302E

2N6075B
2N6070A
2N6070A
2N6073A
2N6073A
2N6075A

3-83
-

T2302F
T2302M
T2302PA
T2302PB
T2302PC
T2302PO

2N6070A
2N6075A
2N6070A
2N6070A
2N6073A
2N6073A

3-83
3-83
3-83

T2302PE
T2302PF
T2302PM
T2303F
T2304B
T23040

2N6075A
2N6070A
2N6075A
2N6070A
2N6070A
2N6073A

3-83
3-83
3-83

T2305B
T23050
T2306A
T2306B
T23060
T2311A

2N6071A
2N6073A
2N6070A
2N6071A
2N6073A
2N6070B

3-83
3-83
3-83
3-83
-

T2311B
T23110
T2311F
T2312A
T2312B
T23120

2N6070B
2N6071B
2N6070B
2N6070A
2N6070A
2N6071A

3-83

T2312F
T2313A
T2313B
T23130
T2313F
T2313M

2N6070A
2N6070A
2N6070A
2N6071A
2N6071A
2N6075A

3-83
3-83
3-83

-

3-83
3-83
3-83

-

3-83

T2322A
T2322B
T2322C
T23220
T2322E
T2322F

T2322B
T2322B
T23220
T23220
T2322M
T2322B

3-316
3-316
3-316
3-316
3-316
3-316

T2322M
T2323A
T2323B
T2323C
T23230
T2323E

T2322M
T2323B
T2323B
T23230
T23230
T2323M

3-316
3-316
3-316
3-316
3-316
3-316

T2323F
T2323M
T2500A
T2500B
T2500BFP
T2500C

T2323B
T2323M
T2500B
T2500B
T2500BFP
T25000

3-316
3-316
3-318
3-318
3-320
3-318

T25000
T25000FP
T2500E
T2500M
T2500MFP
T2500N

T25000
T25000FP
T2500M
T2500M
T2500MFP
T2500N

3-318
3-320
3-318
3-318
3-320
3-318

T2500NFP
T25005
T2506B
T25060
T2800A
T2800B

T2500NFP
T2500N
T2500B
T25000
T2800B
T2800B

3-320
3-318
3-318
3-318
3-322
3-322

T2800C
T28000
T2800E

T28000
T28000
T2800M

3-322
3-322
3-322

pal~d~~~ter

Motorola
Direct
Replacement

T2800F
T2800M
T2801A

T2800B
T2800M
T2801B

3-322
3-322
3-324

T2801B
T2801C
T28010
T2801E
T2801M
T2801N

T2801B
T28010
T28010
T2801M
T2801M
T2801N

3-324
3-324
3-324
3-324
3-324
3-324

T28015
T2802A
T2802B
T2802C
T28020
T2802E

T2801N
T2802B
T2802B
T28020
T28020
T2802M

3-324
3-322
3-322
3-322
3-322
3-322

T2802F
T2802M
T2806B
T2806C
T28060
T2806M

T2802B
T2802M
T2800B
T28000
T28000
T2800M

3-322
3-322
3-322
3-322
3-322
3-322

Motorola
Similar
Replacement

Page #

T2806N
T2850A
T2850B
T28500
T2850E
T2851B

T28018

T2851C
T28510
T2851E
T2856B
T2856C
T28560

T28010
T28010
T2801M
T2800B
T28000
T28000

3-324
3-324
3-324
3-322
3-322
3-322

T4100A
T4100B
T4100C
T41000
T4100E
T4100F

2N5571
2N5571
2N5572
2N5572
T4100M
2N5571

3-75
3-75
3-75
3-75
3-75
3-75

T4100M
T4101A
T4101B
T4101C
T41010
T4101E

T4100M
2N5567
2N5567
2N5568
2N5568
T4101M

3-75
3-71
3-71
3-71
3-71
3-71

T4101F
T4101M
T4106B
T41060
T4106M
T4107B

2N5567
T4101M
2N5571
2N5572
T4100M
2N5567

3-71
3-71
3-75
3-75
3-75
3-71

T41070
T4107M
T4110A
T4110B
T4110C
T41100

2N5568
T4101M
2N5573
2N5573
2N5574
2N5574

3-71
3-71
3-75
3-75
3-75
3-75

T4110E
T4110F
T4110M
T4111A
T4111B
T4111C

T4110M
2N5573
T4110M
2N5569
2N5569
2N5570

3-75
3-75
3-75
3-71
3-71
3-71

T41110
T4111E
T4111F
T4111M
T4116B
T41160

2N5570
T4111M
2N5569
T4111M
2N5573
2N5574

3-71
3-71
3-71
3-71
3-75
3-75

MAC218A 10FP
2N6346A
2N6346A
2N6347A
2N6347A

3-172
3-103
3-103
3-103
3-103
3-324

~
..
'~
" ! l t l i i . ~i!.LG
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...

MOTOROLA THYRISTOR DEVICE DATA
5-20

p~~d~~~ter

Motorola
Direct
Replacement

Motorola
Similar
Replacemenl

Page #

T4116M
T4117B
T4117D
T4117M
T4120A
T41208

T4110M
2N5569
2N5570
T4111M
T4120B
T41208

3-75
3-71
3-71
3-71
3-326
3-326

T4120C
T4120D
T4120E
T4120F
T4120M
T4120N

T4120D
T4120D
T4120M
T41208
T4120M
T4120N

3-326
3-326
3-326
3-326
3-326
3-326

T4120S
T4121A
T41218
T4121C
T4121D
T4121E

T4120N
T41218
T41218
T4121D
T4121D
T4121M

3-326
3-71
3-71
3-71
3-71
3-71

T4121F
T4121M
T4121N
T4121S
T41268
T4126D

T41218
T4121M
T4121N
T4121N
T41208
T4120D

3-71
3-71
3-71
3-71
3-326
3-326

T4126M
T41278
T4127D
T4127M
T4700B
T4700C

T4120M
T41218
T4121D
T4121M

MACI5A4
MAC15A6

3-326
3-71
3-71
3-71
3-138
3-138

T4700E
T4700F
T47068
T4706D
T6000A
T6000B

MAC15A8
MACI5A4
MACI5A4
MAC15A6
MACI5A4
MACI5A4

3-138
3-138
3-138
3-138
3-138
3-138

T6000C
T6000D
T6000E
T6000F
T6000M
T6001A

MAC15A6
MAC15A6
MAC15A8
MACI5A4
MAC15A8
MACI5A4

3-138
3-138
3-138
3-138
3-138
3-138

T6001B
T6001C
T6001D
T6001E
T6001F
T6001M

MACI5A4
MAC15A6
MAC15A6
MAC15A8
MACI5A4
MAC15A8

3-138
3-138
3-138
3-138
3-138
3-138

T6006A
T60068
T6006C
T6006D
T6006E
T6006F

MACI5A4
MACI5A4
MAC15A6
MAC15A6
MAC15A8
MACI5A4

3-138
3-138
3-138
3-138
3-138
3-138

T6006M
T6260B
T6260C
T6260D
T6260E
T6260M

MAC15A8
MAC25A4
MAC25A6
MAC25A6
MAC25A8
MAC25A8

3-138
3-146
3-146
3-146
3-146
3-146

T6261B
T6261C
T6261 E
T6261M
T6400A
T64008

MAC25A4
MAC25A6
MAC25A8
MAC25A8
T64008
T64008

3-146
3-146
3-146
3-146
3-328
3-328

T6400C
T6400D
T6400E

T6400D
T6400D
T6400M

3-328
3-328
3-328

Motorola
Direct
Replacement

T6400M
T6400N
T6400S

T6400M
T6400N
T6400N

3-328
3-328
3-328

T6401A
T64018
T6401C
T6401D
T6401E
T6401M

T6401B
T64018
T6401D
T6401D
T6401M
T6401M

3-330
3-330
3-330
3-330
3-330
3-330

T6401N
T6401S
T6402E
T6402F
T64068
T6406D

T6401N
T6401N
2N5443
2N5441
2N5441
2N5442

3-330
3-330
3-67
3-67
3-67
3-67

T6406E
T6406M
T6407B
T6407D
T6407E
T6407M

2N5443
2N5443
T64018
T6401D
T6401M
T6401M

3-67
3-67
3-330
3-330
3-330
3-330

T6410A
T6410B
T6410C
T6410D
T6410E
T6410M

T6410B
T6410B
T6410D
T6410D
T641 OM
T6410M

3-328
3-328
3-328
3-328
3-328
3-328

T6410N
T6410S
T6411A
T6411B
T6411C
T6411D

T6410N
T6410N
T64118
T6411B
T6411D
T6411D

3-328
3-328
3-330
3-330
3-330
3-330

T6411E
T6411M
T6411N
T6411S
T6412E
T6412F

T6411M
T6411M
T6411N
T6411N
2N5446
2N5444

3-330
3-330
3-330
3-330
3-67
3-67

T6420A
T6420B
T6420C
T6420D
T6420E
T6420M

T64208
T64208
T6420D
T6420D
T6420M
T6420M

3-328
3-328
3-328
3-328
3-328
3-328

T6420N
T6420S
T6421A
T64218
T6421C
T6421D

T6420N
T6420N
T6421B
T64218
T6421D
T6421D

3-328
3-328
3-330
3-330
3-330
3-330

T6421E
T6421M
T6421 N
T6421S
T64268
T6426D

T6421M
T6421M
T6421N
T6421N
T64208
T6420D

3-330
3-330
3-330
3-330
3-328
3-328

T6426M
T64278
T6427D
T6427M
TE205
TE305

T6420M
T64218
T6421D
T6421M
MCR100-4
MCRlO0-6

3-328
3-330
3-330
3-330
3-228
3-228

MCR100-6
MCR100-8
MCR100-8
2N5567
2N5568
2N5569

3-228
3-228
3-228
3-71
3-71
3-71

TE405
TE505
TE605
TIC20
TIC21
TIC22

MOTOROLA THYRISTOR DEVICE DATA
5-21

Motorola
Similar
Replacement

p~~d~~~ter

Page #

•

p;~d~~~ter

•

Motorota
Direct
Replacement

Motorota
Similar
Replacement

TIC23
TIC39A
TIC398
TIC39C
TIC390
TIC39E

2N6238
2N6239
MCR100-6
2N6240
MCR100-8

3-71
3-100
3-100
3-228
3-100
3-228

TIC39F
TIC39Y
TIC44
TIC45
TIC46
TIC47

2N6237
2N6237
2N5060
2N5061
2N5062
2N5064

3-100
3-100
3-55
3-55
3-55
3-55

TIC60
TIC61
TIC62
TIC63
TIC64
TIC116A

2N5060
2N5061
2N5062
2N5064
2N5064
C122Al

3-55
3-55
3-55
3-55
3-55
3-128

TIC1168
TIC116C
TIC1160
[ICI16E
TIC116F
TIC116M

C12281
C12201
C12201
C122Ml
C122Fl
C122Ml

3-128
3-128
3-128
3-128
3-128
3-128

TIC126A
TIC1268
TIC126C
TIC1260
TIC126E
TIC126F

2N6395
2N6396
2N6397
2N6397
2N6398
2N6394

3-111
3-111
3-111
3-111
3-111
3-111

TIC126M
TIC205A
TIC2058
TIC2050
TIC206A
TIC2068

2N6398
2N60708
2N60708
2N60738
2N6070A
2N6071A

3-111
3-83
3-83

TIC2060
TIC215A
TIC2158
TIC2150
TIC216A
TIC2168

2N6073A
2N6070A
2N6071A
2N6073A
MAC228A4
MAC228A4

3-83
3-83
3-83
3-184
3-184

TIC2160
TIC2208
TIC2200
TIC220E
TIC2218
TIC2210

MAC228A6
2N5567
2N5568
T4101M
T41218
T41210

3-184
3-71
3-71
3-71
3-71
3-71

TIC221E
TIC2228
TIC2220
TIC222E
TIC2268
TIC2260

T4121M
2N5569
2N5570
T4111M
SC1418
SC1410

3-71
3-71
3-71
3-71
3-309
3-309

TIC2308
TIC2300
TIC230E
TIC2318
TIC2310
TIC231E

2N5567
2N5568
T4101M
T41218
T41210
T4121M

3-71
3-71
3-71
3-71
3-71
3-71

TIC2328
TlC2320
TIC232E
TIC2368
TIC2360
TIC2408

2N5569
2N5570
T4111M
2N6342A
2N6343A
2N5571

3-71
3-71
3-71
3-107
3-107
3-75

TIC2400
TIC240E
TIC2418

2N5572
T4100M
T41208

3-75
3-75
3-326

2N5570

Pal~d~~~ter

Page #

Motorola
Direct
Replacement

Page #

TIC2410
TlC241E
TIC2428

T41200
T4120M
2N5573

3-326
3-326
3-75

TIC2420
TIC242E
TIC2468
TIC2460
TIC2528
TIC2520

2N5574
T4110M
MAC15A4
MAC15A6
T64118
T64110

3-75
3-75
3-138
3-138
3-330
3-330

TlC252E
TIC252M
TIC2538
TIC2530
TIC253E
TIC253M

T6411M
T6411M
MAC20A4
MAC20A6
MAC20A8
MAC20A8

3-330
3-330
3-146
3-146
3-146
3-146

TIC2608
TIC2600
TIC260E
TIC260M
TIC2620
TIC262E

T64018
T64010
T6401M
T6401M
T64110
T6411M

3-330
3-330
3-330
3-330
3-330
3-330

TIC262M
TIC2638
TIC2630
TIC263E
TIC263M
TIC2708

T6411M
MAC25A4
MAC25A6
MAC25A8
MAC25A8
2N5441

3-330
3-146
3-146
3-146
3146
3-6,

TIC2700
TIC270E
TIC270M
TIC2728
TIC2720
TIC272E

2N5442
2N5443
2N5444
2N5444
2N5445
2N5446

3-67
3-67
3-67
3-6,
3-67
367

TIC272M
TL 106-05
TL 106-1
TL 106-2
TL 106-4
TL 106-6

2N5446
MCR106-2
MCR106-3
MCR106-4
MCR106-6
MCR1068

3-67
3232
3-232
3-232
3-232
3-232

TL 107-05
TL 107-1
TL 107-2
TL 107-4
TL 107-6
TL 1003

MCR106-2
MCR1063
MCR1064
MCR106-6
MCR106-8
MCR218-3

3-232
3-232
3232
3-232
3232
3239

TL 1006
TL2003
TL2006
TL4003
TL4006
TL6003

MCR2183
MCR218-4
MCR218-4
MCR218-6
MCR218-6
MCR218-8

3-239
3-239
3-239
3239
3239
3239

TL6006
TL8003
TL8006
TLClllA
TLC1118
TLC113A

MCR2188
MCR21810
MCR21810
T23228
T23228
T2322B

3-239
3-239
3-239
3316
3-316
3316

TLC1138
TLC221A
TLC2218
TLC223A
TLC2238
TLS 106-05

T23228
T23228
123220
T23228
T23228
MCR106-2

3-316
3316
3-316
3-316
3-316
3-232

TLS106-1
TLS106-2
TLS106-4
TLS106-6
TLS 107-05
TLS107-1

MCR106-3
MCR106-4
MCR106-6
MCH106-8
MCR106-2
MCR106-3

3-232
3-232
3-232
3-232
3-232
3-232

MOTOROLA THYRISTOR DEVICE DATA

5-22

Motorola
Similar
Replacement

p~~td~~%ter

Motorota
Direct
Replacement

Motorota
Similar
Replacement

Page #

TL5107-2
TL5107-4
TL5107-6
TM507
TM1007
TM2007

MCR106-4
MCR106-6
MCR106-8
2N4168
2N4169
2N4170

3-232
3-232
3-232
3-27
3-27
3-27

TM3007
TM4007
TM5007
TM6007
TRAL11250
TRAL 11350

2N4171
2N4172
2N4173
2N4174
5C2608
T6420B

3-27
3-27
3-27
3-27
;1-314
3-328

TRAL22250
TRAL22350
TRAL38350
T5135
T5235
T5435

5C26OO
T6420B
T6420N
2N3896
2N3897
2N3898

3-314
3-328
3-328
3-21
3-21
3-21

T5635
T5835
TY504
TY508
TY510
TY1004

2N3899
MCR3935-10
MCR218-2
MCR218-2
2N6394
MCR218-3

3-21
3-268
3-239
3-239
3-111
3-239

TY1008
TY10l0
TY2004
TY2008
TY2010
TY3004

MCR218-3
2N6395
MCR218-4
MCR218-4
2N6396
MCR218-6

3-239
3-111
3-239
3-239
3-111
3-239

TY3008
TY3010
TY4004
TY4008
TY4010
TY5004

MCR218-6
MCR220-6
MCR218-6
MCR218-6
2N6397
MCR218-8

3-239
3-239
3-239
3-111
3-239

TY5008
TY5010
TY6004
TY6008
TY6010
TY8008

MCR218-8
2N6398
MCR218-8
MCR218-8
2N6398
MCR218-1O

3-239
3-111
3-239
3-239
3-111
3-239

TY8010
TYAL118B
TYAL-118M
TYAL-228B
TYAL-228C
TYAL-228M

2N6398
MAC218A4
T2802B
MAC218A6
T2800B
T28020

3-111
3-169
3-322
3-169
3-322
3-322

TYAL -388B
TYAL1110B
TYAL1110M
TYAL 11158
TYAL 1115M
TYAL2210B

MAC218A 10
5C146B
5C146B
MAC15A4
MAC15A4
5C1460

3-169
3-309
3-309
3-138
3-138
3-309

TYAL2210M
TYAL2215B
TYAL2215M
TYAL3810B
TYAL3810M
TYAL3815B
TYAL3815M

5C1460
MAC15A6
MAC15A6
5C146N
5C146N
MAC15A10
MAC15Al0

3-309
3-138
3-138
3-309
3-309
3-138
3-138

p~~td~~t~ter

Motorola
Direct
Replacement

Motorola
Similar
Replacement

Page #

•

"~..": ..... ;.,. ' ,,'.:,:<&---"'?fi·"<"--"l-\$,,'¥.l;t.%,iL'i'i';;"'~'p!-h.~<'''-S:.w·'!'':::,!/tik"':·"M"'""-.J!"[J-j;NJ~~~A-'lt~~~
~~
~;N".1~"~ 4$, . . ;:),.: . . '!\iii r. ..'Y... r~i~,f~. ~~.~ ...~. . . . "w~~3tfV'~~~~t\ii:. . . i&l~~~~

MOTOROLA THYRISTOR DEVICE DATA
5-23

•

Theory and Applications
(Chapters 1 thru 9)

•

Selector Guide

•

Data Sheets

•

•

~

Outline Dimensions
and Leadform Options

Index and
Cross Reference
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