1988_Samsung_Transistor_Data_Book_Vol_1 1988 Samsung Transistor Data Book Vol 1

User Manual: 1988_Samsung_Transistor_Data_Book_Vol_1

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c8 SAMSUNG

Transistor .
Data Book (Vol. 1)

1988

• Small Signal TR

PRINTED IN KOREA
Circuit diagrams utilizing SAMSUNG andlor SAMSUNG SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD., products are included as a means of illustrating typical semiconductor spplications; consequently, complete information sufficient for .construction purposes is not necessarily given. The information has been carefully checked and is believed to be
entirely reliable. However, no responsibility is assumed for inaccuracies: Furthermore, such information does not cO!1vey
to the purchaser of the semiconductor devices described herein any license under the patent righle of SAMSUNG andlor
SAMSUNG SEMICONDUCTOR & TELECOMMUNICATIONS CO., LTD., or others. SAMSUNG andlor SAMSUNG SEMICON·
DUCTOR & TELECOMMUNICATIONS CO., LTD., reserve the right to chenge device specifications.

r

.

·.SAMSUNG SEMICONDUCTOR.
DATA BOOK LIST'
I. Semiconductor Product Guide
. II. Transistor Data Book
< Vol. 1: Small Signal TR

Vol. 2: Bipolar Power TR
Vol. 3: TR Pelfet

III. Linear IC Data Book
Vol. 1: AudioNideo
Vol. 2: Telecom/Industrial/Data Converter IC

IV. MOS Product Data Book
V. High Performance CMOS Logic Data Book
VI. MOS Memory Data Book
VII. SFET Data Book
VIII. ·MPR Data Book
IX. CPL Data Book
X. Dot Matrix Data Book

, TRANSISTOR ·DATA BOOK
VOLUME 1
KSA Series
KSB Series
KSC Series
KSD Series
KSK Ser.ies
KSR Series
2N Series
BC Series
MM Series
MPS Series
SSSeries
VOLUME 2
KSA Series
KSB Series
KSC'Series
KSD Series
BU Series
MJE Series
TIP Series

'"

"

TABLE OF CONTENTS
(Volume 1)
I.

QUALITY & RELIABILITy..........................................

"II.

PRODUCT GlHDE
1. Small Signal Transistors ........... ; ....................... :........
. 2. Power Transistors ....................................................
3. Quick Reference Table ................ :............................

15

31
40
45

III. DATA SHEETS
1.
.2.
3.
4.
5.

6.
7.
8.
9.
10.
11.

KSA Series .............................................................
KSB Series .............................................................
KSC Series '.............................................................
KSD Series ......... : .....................................................
KSK Series .............................................................
.KSR Series ..............................................................
2N Series ...............................................................
Be Series ...............................................................
MM Series ..............................................................
MPS Series .............................................................
SS Series ............................................... ~ ................

55
108
117
250

263
285
429

473
498

576
633

IV. PACKAGE DIMENSIONS .......................................... 681
V.

SALES OFFICE and MANUFACTURER'S
REPRESENTATIVES ........ ~ ....: .................................... 689

TABLE OF CONTENTS
(Volume 2)
.
I.

QUAUTY & RELIABILITY

II.

PRODUCT GUIDE
1. Small Signal Transistors
2. POWER Transistors
3. Quick Reference Table

III. DATA SHEETS
. 1.
2.
3.
4.
5.
6.
7.

KSA Series
KSB Series
KSC .Series .
KSD Series
BU Series
MJE Series
TIP Series

IV. PACKA~E DIMENSIONS
V. SALES OFFICES.& MANUFACTURER'S
REPRESENTATIVES

ALPHANUMERIC. INDEX
1. KSA Series
Device

Page

Device

Page

Device

Page

KSA473
KSA539
KSA542
KSA545
KSA614
KSA634
KSA636
KSA640
KSA642
KSA643
KSA707
KSA708
KSA709
KSA733
KSA812
KSA91 0
KSA916
KSA928A
KSA931
KSA940
KSA952
KSA953
KSA954
KSA992
KSA10l0
KSA1013
KSAl142
KSAl150
KSAl174
KSAl175
KSAl182
KSA1220/A
KSA1298
KSA1378

Vol. 2

KSBl149
KSBl150
KSBl151

Vol. 2
Vol. 2
Vol. 2

KSC2333
KSC2334
KSC2335
KSC2340
. KSC2383
KSC2500
KSC2517
KSC2518
KSC2669
KSC2682
KSC2688
KSC2690/A
KSC2710
KSC2715
KSC2734
KSC2749
KSC2751
KSC2752
KSC2755
KSC2756
KSC2757
KSC2758
KSC2759
KSC2784
KSC2785
KSC2786
KSC2787
KSC2859
KSC3120
KSC3125
KSC3265
KSC3488
KSC5020
KSC5021
KSC5022
KSC5023
KSC5024
KSC5025
KSC5026
KSC5027
KSC5028
KSC5029
KSC5030
KSC5031

Vol. 2
Vol. 2
Vol. 2

55
57
59
Vol. 2
Vol. 2
Vol. 2

61
64
66
68
70
72
74
76
78
80
82
84
Vol. 2

86
87
87
90
Vol. 2

93
Vol. 2

96
98
101
103
Vol. 2
105
106

2. KSB Series
Device

KSB546
KSB564A
KSB596
KSB601
KSB707
KSB708
KSB744/A
KSB772
KSB794
KSB795
KSB81 0
KSB811
KSB834
KSBll16/A

Page
Vol. 2

108
2
2
2
2
2
2
2
2
110
112
Vol. 2
114

Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.

3. KSC Series
Device

Page

KSC184
KSC388
KSC815
KSC838
KSC839
KSC853
KSC900
KSC921
KSC945
KSC1008
KSC1009
KSC1070
KSC1072
KSC1096
KSC1098
KSCl173
KSCl187
KSC1188
KSC1222
KSC1330
KSC1393
KSC1394
KSC1395
KSC1506
KSC1507
KSC1520
KSC1520A
KSC1623
KSC1674
KSC1695
KSC1730
KSC1845
KSC1983
KSC2001
KSC2002
KSC2003
KSC2073
KSC2223
KSC2233
KSC2310
KSC2316
KSC2326A
KSC2330
KSC2331

117
119
121
123
125
127
129
132
134
136
138
140
144
Vol. 2
Vol. 2
Vol. 2
146
148
150
153
155
158
160
162
,
Vol. 2
Vol. 2
Vol. 2
164
166
171
173
176
Vol. 2
179
180
180
Vol. 2
183
Vol. 2·
186
188
190
192
194

196
198
201
Vol. 2
Vol. 2
203
Vol. 2
Vol. 2
Vol. 2
205
207
209
Vol. 2
Vol. 2
Vol. 2
212
216
219
222
226
230
232
234
239
241
243
245
247
248
.Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2.
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2

4. KSD Series
Device

Page

KSD·73
KSD227
KSD261

Vol. 2

250
252

ALPHANUMERIC INDEX
Device

(Continued)

Page

KSD28S·
KSD362
KSI;l363
KSD401

Device

Vol. 2
Vol. 2
Vol. 2
Vol. 2
254
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
256
258
260
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2

KSD471/A

KSD526
KSD560
KSD568
KSD569
KSD794/A

KSP880
KSD882
KSD985
KSD986
KSD1020
KSD1021
KSD1616/A
KSD1691
KSD1.692
KSD2693
KSD5000
KSD5001
KSD5002
KSD5003
KSD5004
KSD5005
KSD5006
KSD5007
KSD5010
KSD5011
KSD5012
KSD5013
KSD5014
KSD5015
KSD5016
KSD5017
5. KSK Series
Device

Page

KSK30
KSK65
KSK117
KSK123
KSK161
KSK211

263
267
270
274
277
281

6. KSR Series
Device

I

KSR1001

Page

I

285

I

KSR1022
KSR1003
KSR1004
KSR1005
KSR1006
KSR1007
KSR1008
. KSR1009
KSR1010
KSR1011
KSR1012
KSR1013
KSR1014
: KSR1191
KSR1102
KSR1103
KSR1104
KSR1105
KSR1106
KSR1107
KSR1108
KSR1109
KSR1110
KSR1111
KSR1112
KSR1113
KSR1114
KSR1201
KSR1202
KSFi1203
KSR1204
KSR1205
KSR1206
KSR1207
KSR1208
KSR1209
KSR1210
KSR1211
KSR1212
KSR1213
KSR1214
KSR2001
KSR2002
KSR2003
KSR2004
KSR2005
KSR2006
KSR2007
KSR2008
KSR2009
KSR2010
KSR2011

Page

Device

KSR2012 .
iKSR2013
KSR2014
KSR2101
KSR2102
KSR2103
KSR2104
KSR2105
KSR2106
KSR2107
KSR2108
KSR2109
KSR2110
KSR2111
KSR2112
KSR2113
KSR2114
KSR2201
KSR2202
KSR2203
. KSR2204
KSR2205
KSR2206
KSR2207
KSR2208
KSR2209
KSR2210
KSR2211
KSR2212
KSR2.213
KSR2214

287
289
291
293
295
297
299
301
303
300
306
307
308
309
311
313
315
317
319
321
323
325
327
329
330 .
331
332
333
335
337.
339
341
343
345
7. 2N Series
347
Device
349
2N3903
351
2N3904
353
354
2N3905
355
2N3906
356
2N4123
357
2N4124
359
2N4125
361
2N4126
'.
363
2N4400
/
365
2N4401
367
2N4402'
369
2N4403
371
2N5086
373
2N5087
2N5088
375
2N6089
377

. page

378
379
380
381
383
385
387
389
391
393
395
.397
399
401
402
403
404
405
407
409
411
413
. 415
417
419
421
423
425
426
427
428

Page

429
430
432
433
4.35
436
437
438
439
441
442
443
445
447
448
451

ALPHANUMERIC INDEX
Device

Page

2N5209
2N5210
2N5400
2N5401
2N5550
2N5551
2N6427
2N6428
2N6428A
2N6515
2N6516
2N6517
2N6518
2N6519
2N6520

452
453
454
455
457
458
460
462
463
464
466
467
468
469
470

8. Be Series
Page

Device
BCW29
aCW30
BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW61 A
BCW61B
BCW61C
BCW61D
BCW69
BCW70
BCW71
BCW72
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
BCX71H
BCX71J
BCX71K

I

473
474
475
476
477
478
472
480
481
482
483
484
485
486
487
488
489
490
491
492
493
494
495
496
497

9. BU Series
Device
BU406
BU407
BU408
BU806

Page
Vol.
Vol.
Vol.
Vol.

2
2
2
2

(Continued)

Device

I.

BU807

Page

I

Vol. 2

10. MJE Series
Device
MJE1.70
MJE171
MJE172
MJE180
MJE181
MJE182
MJE200
MJE21 0
MJE340
MJE350
MJE700
MJE701
MJE702
MJE703
MJE800
MJE801
MJE802
MJE803
MJE2955T
MJE3053T

Page
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.

2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2

11. MM Series
Device

Page

MMBA81C5
MMDA811C6
MMBA811C7
MMBA811C8
MMBA812M3
MMBA812M4
MMBA812M5
MMBA812M6
MMBA812M7
MMBC1009Fl
MMBC1009F2
MMBC1009F3
MMBC1009F4
MMBC1009F5
MMBC1622D6
MMBC1622D7
MMBC1622D8
MMBC1623L3
MMBC1622L4
MMBC1623L5
MMBC1623L6
MMBC1622L7
MMBR5179

498
499
500
501
502
503
504
505
506
507
. 508
509
510
511
512
514
515
516
517
518.
519
520
522

I

Device

Page

MMBT2222
MMBT2222A
MMBT2484
MMBT2907
MMBT2907A
MMBT3903
MMBT3904
MMBT3906
MMBT4123
MMBT4124
MMBT4125
MMBT4126
MMBT4401
MMBT4403
MMBT5086
MMBT5087
MMBT5088
MMBT5089
MMBT5401
MMBT5550
MMBT6427
MMBT6428
MMBT6429
MMBTA05
MMBTA06
MMBTA13
MMBTA14
MMBTA20
MMBTA42
MMBTA43
MMBTA55
MMBTA56
MMBTA63
MMBTA64
MMBTA70
MMBTA92
MMBTA93
MMBTH10
MMBTH24

523
525
526
527
529
530
531
533
535
536
537
538
539
541
543
545
546
549
550
552
554
556
557
558
559
560
561
562
563
564
566
567
568
570
571
572
573
574
575

\

12. MPS Series
Device
MPS2222
MPS2222A
MPS2907
MPS29007A
MPS3702
MPS3703
MPS3704
MPS3705
MPS3706

Page
576
578
579
581
582
584
585
586
587

ALPHANUMER1C INDEX
Device
MPS4249
MPS4250
MPS4250A
MPS5172
MPS5179
MPS6513
MPS6'517
MPS6520
MPS6521
MPS6522
MPS6523
MPS6560
MPS6562,
MPS6601
MPS6602
MPS6651
MPS8097
MPS8098
MPS8099
MPS8598
MPS8599
MPSA05
MPSA06
MPSA10
MP8A12
MPSA1.3
MPSA14
MPSA20
MPSA25
MPSA26
MPSA27
MP8A42
MPSA43
MPSA44
MPSA45
MPSA55
MPSA56
MPSA62
MPSA63

Page'
583
589
590
591
592
593
594
595
596
597
598
' 599
600
601
603
604
·606
607
609
610
612·
613
615
616
618
619
620
621
622
624
625
626
628
629632 .
634
636
637
639

(Continued)

Device

Page

Device

Page

MPSA64
MPSA70
MPSA75
MPSA76
MP8A77
MP8A92

640
641
643
645
646
647
647
649
649
652
654
657
660,
662

TIP48
TtP49
TIP50
TIP1PO
TIP101
TIP102
TtPl05
TIP106
TIP107
TtPll0
TtPl11
TtPl12
TIPl15
TIPl16
TtPl17
TIP120
TtP121
TIP122
TIP125

Vol. 2
Vol. 2
Vot.2
Vol. 2
Vol. 2
Vol. 2
Vol. 2,
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vot.2
Vol. 2
Vol. 2
. Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2
Vol. 2

MP8~93

MPSH10
MPSH11
MP8H17
MP8H20
MP8H24
MP8LOl
MPSL51

13. SS Series
. Device
888050
SS8550
889011
SS9012
889013
SS9014
SS9015
SS9016
S89018

Page
663
665
667
669
671
673
675
677
679

14. TIP Series
Device
TtP29
TIP3.0
TIP31
TIP32
TIP41 .
TIP42
TIP47

TtP~26

\

Page
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.
Vol.

2
2
2
2
2
2
2

TtP127
TIP140
TIP141
TIP142
TIP140F
TIP141 F
TtP142F
TIP140T
TIP141T
TtP142T
TtP145
TIP146
TIP147
TtP145F
TtP145F
TIP14,5F
TIP145T
TtP146T
TtP147T

'I

.~.

QUALITY ASSURANCE and RELIABILITY PROGRAM
1. Introduction
Samsung utilizes rigorous qualification and reliability programs to monitor the integrity of its devices. All industry standard (and various non-standard) stresses are run. Testing is done not only to collect data, but also to detect trends
and product anomalies, with rectification to take place immediately (if necessary). This protects the customer from receiving
discrepant material. Careful attention is given to any manufacturing changes, both through Engineering Change Notices
and appropriate reliability stressing.
Items such as particular tests, frequency, sample sizes, acceptance criteria, and methods of stressing are detailed later
in this chapter.

2. Policy
Samsung is committed to supplying high-quality semiconductors to its consumers. All product released for general sales
has been fully tested and qualified. By meeting or exceeding normal industry standards for reliability, Samsung can confidently supply products to the world that will meet customer applications and reliability standards. Of course special
programs can be run for customers who have particular requirements which are considered non-standard.
The quality organization must approve any product before it is officially qualified and sitributed. To do this most effectively, fully-functional devices must pass two critical stages prior to sales. Step 1 is product evaluation; step 2 is product qualification. Details are listed below .

.3. Scope
PasslFail criteria are established by the quality assurance organization. All products have specifications which apply
to then regarding reliability streSSing, periodical monitoring, and final lot disposition:
The quality department is responsible for investigating mass-produced product for sicrepancies, and enforcing corrective actions. All outoging product goes through "QA-gating", where tests particularly critical to the product are accomplished.
Only when quality assurance approves a device, either through qualification or gating acceptance, is it released. Fundamental "no-rework" policies ensure only highly reliable material leaves the factory. Testing is done to MIL-STD 883
and MIL-STD 750 standards, with sampling done in accordance with MIL-STD 19500E and. MIL-STD 1050. Samsung
also has internal specifications where its requirements exceed those of MIL-STDs.

4. Qualification Procedures
Procedures to qualify devices are listed below. There are both general and product-specific requirements. Procedures
are detailed for new products, die-only qualifications, and package-only qualifications. The latter two are for products
andlor packages alr!;lady qualified, but where there is room for further product optimization.

I Qualification Program I
I

I

New Process
Wafer-fabrication

New Produce
•
•
•
•
•
•
•
•
•

HTRB 1000HR
1000HR
10PL
1000HR
HTS
168HR
PCT
WHTRB 1000HR
T/C,T/S 200CYC.
20000CYC.
PIC
Solderability
Other as
applicable

•
•
•
•
•

HTRB
HTS
PCT
WHTRB
T/C,T/S

1000HR
1000HR
168HR
1 OOOHR
200CYC.

I
Packge
Sub-assembly
• HTRB 500HR
200CYC.
• TIC
• TIS
200CYC.
• PCT 168HR
• Other as
applicable

I
• Other
• Same as
, New product
Qual.

• DeSign, EqUipment,
Material(s), etc ....
Fig. 1. Qualification Programs.

c8

.SAMSUNG SEMICONDUCTOR

17

I

QUAL.TV -ASSURANCE and RELIABI'LITY-, PROGRAM
4.1 New product qualification test items
No.

Test Item

Test Condition

Sample
Size

LTPD

Reference
Method

ACC.

'No

Note

1

High Temperature
Reverse Bias
(HTRB)

.. -T.=Tj(max)
VCB=0:8XVCBO
1000HRS

45

10

1

2

High Te~perature
Storage (HTS)

T.=Tj(max)
1000HRS

45

10

-1

3

Operating Ufe
(OPL)

Ta=25°C
Pc=Pc(max)
1000HRS

45

10

1

MIL·STD·750
1026:3

4

Intermittent
OPL (IOPL)

Ta=25°C
Pc=Pc(max)
2min/2min On/Off
1000HRS

45

10

1

MIL·STD-750
1036.3

Ll.Tj=125°C
45Sec/90Sec On/Off
20000CVC.

45

10

1

For
PWRTR,

45

10

1

48HR
for PRT

45

10

1

10

1

Power Cycle
5

(PIC)

6

Pressure Cooker
Test (PCT)

Ta=121°C±2°C
RH= 100% 15PSIG
168HRS

Wet High
Temperature
Reverse Bias
(WHTRB)

Ta=85°C, RH=85%
VCB=0.8 XVCBO

-Thermal Shock_

-65°C-150°C
(Liquid)
5min,<10Sec, 5min
200 Cycles

7

8

"

(TIS)

Temperature Cycle
9
(TIC)

10

Solder Heat
Resistance
(S/H)

48HR
for-PRT

For Small·
Signal Device

1000HRS
45

,

\

MIL·STD-883
1011

-65°C-25°C-15·C
10min, 5min, 10min
200 Cycles

45

10

1

MIL·STD-883
1011

Ta=245°C±5°C
t=10±1Sec
(once with flux)

11:>

N/A

0

MIL·STD-75Q
2031

10

N/A

0

MIL·STD-883
2003

Ta=260·C±5·C
t=5±0.5 sec
Reject is>1 0%
uncovered surface

11

Solderability

12

Salt Atmosphere

Ta=35°C, 5% NaCI
24HRS

10

N/A

0

MIL·STD-883
1009A

13

Mechanical
Shock

1500G,05ms
3 Times Each direction
of X,V and Z Axis

10

N/A

0

MIL·STD-750
2016

For
Hermeitc

14

Vibration

20G,3AxiS
f= 1 00 to 2000 cps
for 4min, 4 cycles

10

N/A

0

MIL·STD-883
2007.

For
Hermetic

15

Constant
Acceleration

2000G
X,V,Z Axis
1 min for each Axis

10

N/A

0

MIL·STD-883
2001

For
Hermetic

16

c8

ESD
(Human Body
Model)

R=1.5kQ
C=100pF
5 Discharge

(

MIL·STD-883
5

N/A

0

,

3015

V~±1000V

SAMSUNG SEMICONDUCTOR

18

QUALITY ASSURANCE 'and RELIABILITY PROGRAM .
4.2 . New process, wafer fabrication qualification

1

Test Condition

Sample
Size

LTPD

ACC
No

Ta=Tj(max)
VCB=0.8XVCBO
1000HRS

45

10

1

Test Item

No

High Temperature
Reverse Bias (HTRB)

.-

2

High Temperature
Storage (HTS)

Ta=Tj(max)
1000HRS

45

10

1

3

Pressure Cooker
Test (PCT)

Ta=12loC±2°C
RH=100% 15 PSIG
168HRS

45

to

1

4

Wet High Temperature
Reverse Bias (WHTRBj

Ta=85°C, RH=85%
VCB=0.8XVCBO
1000HRS

45

10

1

5

Thermal Shock (TIS)

-65°C""'150°C(Liquid)
5min,<10sec, 5min
200 cycles

45

10

1

6

Temperature Cycle (TIC).

-65°C""'25°C""'150°C
1 Omin, 5min, 10min
200 Cycles

45

10

1

.

I

4.3 Package Sub-Assembly Qualification
Test Item

No

1

2

High Temperature
Reverse Bias
(HTRB)
Ter:nperature Cycle
(TIC)

3

Pressure Cooker Test
(PCT)

4

Thermal Shock (TIS)

5

Solder Heat ReSistance
(S/H)

Test Condition

Siample
Size

LTPD

ACC
No

Ta=Tj(max)
VCB=VCBOXO.8
500HRS

45

10

1

-65°C""'25°C""'150°C
1 Omin, 5min, 10min
200 CYCLES

45

10

1

Ta=121°C±2°C
RH=100%, 15PSIG
168HRS

45

1()

1

-65°C""'150°C(Liquid)
5min,<10see, 5min
200 CYCLES

45

10

1

260°C±5°C
10±1 sec
Once without Flux

10

N/A

0

100"'2000"'100Hz
20G, 5min, 5Times, X,Y,l

10

N/A

0

6

Vibration (VariableFrequency)

7

Meehanial Shock (MIS)

1500G, 0.5ms
3 Times, X,Y,l

10

N/A

0

8

Constant Acceleration

20000G.
X,Y,l Axis
1 min for each Axis'

10

N/A

0

Notes

Note) • N/A: not available

c8

SAMSUNG SEMICONDUCTOR

19

'QUALITY' ASSURANCE and RELIABILITY PROGRAM
5. Product Reliability (Quality Conformance) Monitors
Samsung implements periodic testing to monitor the ongoing reliability of its products. A subset of stresses used for
qualification are run; they are seen as most critical for basic device reliability. Formally this is known as the Device Reliability
Test System, or simply as DRT.
Lot-by-Iot infant mortality reliability testing is also accomplished at Samsung. The purpose of this is to verify p'rocess
integrity ina full QA step. Formally this is, konwn as Process Reliability Testing, or more simply as PRT. Normally a
short term accelerated Ufetest and package reliability test are done, although exceptions are made in the case of special
devices.
Although Samsung scrupulously utilizes statistical controls throughout it's production process, DRT and PRT serve as
confirmation that indeed the customer does receive only high-grade units. The tables on the following give details of
DRT and PRT processing. '
Quality Conformance Program

I

I
I

I

(Process Reliability Test)

(Infant Ufe Test)

(Device Reliability Test)

• Every Fab Lot

• 1 Processlmonth

• Once/6 mo. per device

• HTRB .. 1 68HR
48HR
• PCT

• HTRB 168HR
(24hr read outs)

•
•
•
•
•

HTR!3
PCT
WHTRB
TIC
TIS

1000HR
168HR
1 OOOHR
200CYC
200CYC

.

Note: Test descriptions given on following pages.

Fig. 2. Quality Conformance Program

(PRT/DRT Product Stress Methodologies)
1~

PRT (Process Reliability Test)
Frequency: Every outgoing lot
No_

Test Item

Test Condition

Sample
Size

LTPD

Accept.
No_

1

High Temperature
Reverse Bias
(HTRB)

Ta=Tj(max)
VCB=VCBOXO.B
168HR max

45

10

'1

2

Pressure
Cooker Test
(PCT) ,

Ta=121 ·C±2·C
100% RH, 15PSIG
48HR

45

10

1

I'

'Note

2. ILT (Infant Life Test) Frequency: 1 Process/month
No_

Test Item

Test Condition

Sample
Size

Note

1

High Temperature
Revers~ Bias
(HTRB)

Ta=Tj(max)
VCB=VCBOXO.8
168HR

300

for Discrete

.ciS

SAMSUNG SEMICON'DUCTOR

.20

QUALITY ASSURANCE and RELIABILITY PROGRAM
~,

DRT (Device Reliability Test)
No•.
1

Test Item
. High Temperature
Reverse Bias (HTRB)

test Condition

Sale

LTPO*

''':-:''''''
No.

Ta=Tj(max)
VCB=VCBOXO.8
1000HRS

45

5
10

0
1

2

Pressure Cooker
Test (PCT)

T.=121°C±2°C
RH=100%, 15PSIG
168HRS

45

5
10

0
1

3

Wet High Temperature
Reverse Bias (WHTRB)

Ta=85°C, RH=85%
VCB=0.8XVCBO
1000HRS

45

5
10

0
1

4

Temperature Cycle (TIC)

-65°C-25°C-150°C
10min, 5mln, 10min
200 Cycles

45

5
10

0
1

5

Thermal Shock (T/S)

-65°C-150°C(Liquid)
5min,<10sec, 5min
200 Cycles

45

5
10

0
1

Note

I

* LTPD 5: S Grade Units LTPD 10: A,B Grade Units.

6. Reliability Tests
The test run by the quality department are accelerated tests, serving to model "rllal world" applications through boosted
temperatures, voltages, and/or humidities. Accelerated conditions are used to derive device knowledge through means quicker
than that of typical application situations. These accelerated conditions are then used to assess differing failure rate mechanisms
that correlate directly with ambient conditions. Following are summaries of various stresses (and their conditions) run by
Samsung on discrete and integrated devices.
High Temperature Reverse Bias (80% max. BVCBO, 150 ° C, static)
For this test, device integrity is checked through stressing of the main blocking junction at an elevated temperature and
voltage. Overall product stability is investigated tl)rough leakage current monitoring; low leakage indicates good integ~ity.
Intermittent Operating Life (PMAX, 25°C, 2 min on/2 min off)
This test is normally applied to scrutinize die bond thermal fatigue. A stressed device undergoes an "on" cycle, where there
is thermal heati[lg due to power dissipation, and an "off" cycle, where there is thermal cooling due to lack of inputted po.wer.
Die attach (between die and package) and bond attach (between wire and die) are the critical areas of concern.
Wet High Temperature Reverse Bias (80% max. BVCBO, 85°C, 85% R.H., static) or (Vcc=Vcc(typ), 85°C, 85.% R.H,
static)
.
Wet High Temperature Reverse Bias Test is used to accelerate failure mechanisms by applying static bias on alternate pins
at high temperature and humidity ambient (85°C/85°C R.H.): This test checks for resistance to moisture penetration by
using an electrolytic principle to accelerate corrosive mechanisms.
.
Pressure Cooker Test (Unbiased, 121°C, i 5 PSIG, 100% R.H:)
The Pressure Cooker Test checks for resistance to moisture penetration. A highly pressurized vessel is used to force water
(thereby promoting corrosion) into packaged devices located ·within the vessel.
High Temperature Storage (Unbiased, 150°C)
High Temperature Storage is utilized to test for both package and die weaknesses. For example, sensitivities to ionic contamination and bond integrity are closely scrutinized.

c8

SAMSUNG SEMICONDUCTOR

21

QUALITY ASSURANCE and RELIABILITY 'PROGRAM
Temperature Cycling (Unbiased, -65°C to +150°C, air) .
This stress uses a chamber with alternating temperatures of -65°C and+1'50°C (air ambient) to thermally cycle devices
within it. No bias Is applied. The cycling checks formechanical integrity of the packaged \levice, in particular bond wires
and die attach, along with metalipolysilicon microcracks.
Thermal Shock (Unbiased, -65°C to +150°C, liquid)
This stress uses a chamber with alternating temperatures of - 65 ° C to + 1 50 ° C (liquid ambient) tg thermally cycle devices
within it. No bias is applied. The cycling is very rapid, and primarily checks for die/package compatibility.
Resistance to Solder Heat (Unbiased, 26.0°C, 10 sec)
Solder Heat ReSistance is performed to establish that devices can Withstand the thermal effects of solder dip, soldering
iron, or solder wave operations.
Meehan.ical Shock (Unbiased, 1500g, Pulse=0.5msec)
This test determines the suitability of a device to be used in equipment where mechanical "shocks" may occur. Such shocks
ersult from sudden o( abrupt changes produced by rough (non-standard) handling, transportation, or field operations.
.
Variable Frequenc~ Vibration (Unbiased, Rarige=100 to 2000.Hz)
Variable Frequency Vibration is done to model the effects of differential vibration in the specified range. Die attach and bonding integrity are particularly stressed, testing the mechanical soundness of device packaging.
Constant Acceleration (Unbiased, 10kg to 20kg)
This is an accelerated test designed to indicate types or modes of structural and mechanical' weaknesses not necessarily
detectable in· Mechanical Shock and Variable Frequency Vibration stressing.

7: Failure criteria
Unit

SCOPE

Min.

Max.

Collector Cut-off Current

ICBO

"A

COMMON

USLX2

Emitter Cut-off Current

ICEO

"A

COMMON

-

HFE(min)<500

I.V.XO.S

I.V.X1.2

HFE

-

HFE(min);;'500

I.V.XO.7

·I.V.X1.3

.-

Parameter'

HFE Variation Ratio

Symbol

I

USLX2

. HFE(min);;'1000

I.V.,XO.6

I.V.X1.4

Collector-Emitter Saturation Voltage

VCE(sat)

mV

COMMON

LSL

USL

Base-Emitter Saturation Voltage

VBE(sat)

mV

COMMON

LSL

USL

Thermal, Resistance

hoVBE

mV

Power

LSL

USL

Noise

NF.,Nv

dB

Low Noise

-

USLX1.5

Note 1) USL: Upper Specification Limit 2) LSL: Lower Specification Limit 3) I.V.: Initial Value

8. Relative Stress Comparisons
Many strel!ses are run at Samsung on many different devices. Through both theoretic.aI and actual. results, it was clearly
determined' which stresses were most effective. Alslo established were the stresses which weren't fully effective.
Comparisons have been·made on the basis of defects able to be determined, efficiency in detection, and. cost. For the reader's
benefit, Samsung provides the results of its conclusions on the following pages.

ciS

SAMSUNG SEMICONDUcrOR

22

QUALITY ASSURANCE and .RELIABILITY PROGRAM
Comparison of Reliability Test Methods
Test
Method
Internal
Visual
Inspection

Infrared ray

Radiography

High
Temperature
Storage

Defect
Lead Structure .
Metallization
Oxide Film
Foreign Particles
Die Bond
Wird Bond
Contamination
Corroded Substrate
Design(thermai)
Die Bond
Lead Structure(Gold)
Foreign Particles
Manufacturing
(~ross Error)
Seal
Package
Contamination

Electricai stability
Metallization
Bulk Silicon
Corrosion

Temperature
Cycling

Package
Seal
Die Bond
Wire Bond
Cracked Substrate
Thermal Mismatching

Thermal'
Shock

Package
Seal
Die Bond
Wire Bond
Cracked Substrate
Thermal Mismatching

Constant
Accelertion

Lead Str!lcture
Die Bond
Wire Bond
Cracked Substrate

EffeetlYenss

Cost

Good

Slightly
Inexpensive
to Moderate

Very Good

Expensive'

Extremely Good
Good
Good
Good
,Good
Good
Good
Good

Moderate

This method of screening must be
performed for high reliability
devices, Cost is affected by the
degree -of visual inspection

For use in design evaluation only
Advantage to using this
screening method 'lies in the
ability to test die frame/
header bonding, and to be able to,
perform inspection after sealing
However, some materials t?eing
transparent to X-rays (for example,
AI and Si) are not able to be analyzed, The use of the complex test
system results in cost six times that
of visual inspection.

Good

Very
Inexpensive

This is a highly desirable screening
method

Good

Very
Inexpensive

"
This screening
method is one of
the most effective for use

Good

Inexpensive

While this screening method'is
similar to 'temperature cyc~ng,
it enables high stress levels as
well, It is probably equal to the
temperature cycling method.

Good

Moderate

Shock
(Without
Monitoring)

Lead Structure

Fairly Poor

Moderate

Shock
(With
Monitoring)

Particles
Intermittent Short
Intermittent Open

Fairly Poor
Failry Good
Fairly Good

Expensive

c8

Remarks

SAMSUNG SEMICONDUCTOR

Doubt exists as to the effectiveness
of screening aluminum wires
with stress levels in the range of
0"'20,000 G
Drop shock testing is thought to
be inferior to 'constant acceleration
methods, However, the pneupactor
shock test is more effective, Shock
test is a destructive test method,
Visual inspection or radiography
is more desirable for detection of
particles

23

•

QUALITY ·ASSURANCE and RELIABILITY ·PROGRAM
Comparison of Reliability Test Methods (continued)
Test
Method
Vibration
Fatigue

Defect

Effectlvenss

Cost

Lead Structure
Package
Die Bond
Wire Bond
Cracked Substrage

Fairly Poor

Expensive

Fairly Poor

Expensiv!'l

Fairly Good
Good
Good

Very
Expensi)le

Good

Expensive

Remarks

This test is destructive
and without merit.

Variable
Frequency
Vibration
(Without
Monitoring)

Package
Die .Bond
Wire Bond
Substrate

Variable
Frequency
Vibration
(Without·
Monitoring)

Foreign Particles
Lead Structure
Intermittent Open

Random
Vibration
(Without
Monitoring)

Package
Die Bond
Wire Bond
Substrate

Random
Vibration
(With
Monitoring)

Foreign Particle
Lead Structure
Intermittent Open

Fairly Good
Good
Good

Very
Expensive

Vibrational
Noise

Foreign Particles

Good

Expensive

Radioisotope
Leak Test

Package
Seal

Good

Moderate

This screening method is effective
for detecting leakage in the range
1 OE6'" 1OE12 atm. mllsec

Helium
Leak Test

Package
Seal

Good

Moderate

This screening method is effective
for detecting leak in the range
1 OE6"'1 OE12 atm. ml/s.ec

Gross
Leak Test

Package
Seal

Good

Inexpensive

Effectiveness is dependent upon
volume. Testing is possible for
detecting leaks above 10E-3 atm.
ml/sec.

High Voltage
Test

Oxide Film

Good

Inexpensive

Effectiveness Depends on structure

Insulation
Resistance

Lead Structure
Metallization
Contamination

Fairly Good

Inexpensive

Good

Expensive·

Intermittent
Operation

c8

Metallization
Bulk Silicon
Oxide Film
. Inversion/Channeling
Design Parmeter
Drift Contamination

The effectiveness of the method for
detecting particles depends on the
type of particle

This screening method is more
effective than variable frequency
vibration(without monitoring), when
used with equipment intended for
space vehicle operation, although it
is more expensive.
This· is one ·of the most expensive
screening methods

Probably about the same as AC
operating life

c

SAMSUNG SEMICONDUCTOR

24

QUALITY· ASSURANCE and RELIABILITY PROGRAM

Test
Method

AC
Operation

Defect

Cost

Very Good

Expensive

Good

Expensive

The AC operation life method is
more effective for any failure
mechanism

Extremely Good

Very
Expensive

Failures are accelerated by
temperature. This is probably
the most expensive and one of the
most effective screening methods.

Fairly Poor

Expensive

Metallization
Bulk Silicon
Oxide Film
Inversion/Channeling
Design Parmeter
Drift Contamination

DC
Operation

Basically the Same
as Intermittent
Operation

High
Temperature
AC
Operation

Same as AC
Operation Ufe
Test

High
Temperature
Reverse
Bias

Effectivenss

Inversion
/Channeling

Remarks

9. Reliability Test Results
Extensive test results have been compiled through long term reliability monitoring (DRT) of devices. Current and historical
data is entered into Samsung's Reliability Newtork, SRN. Thus, past performance of a device or it's family, assemblyevaluation results, manufacturing change reliability results, etcetera, can all be seen via computer through SRN.
Results included in this manual are representative of products stressed, and contain data fro mthe past year. Data is summarized from both die and packalle tests, on five critical stresses. Failure rates for'long term life testing are in FITs, which
are calculated using Arrhenius' Equation. (Arrhenius' Equation is summarized in the Appendix section). Samsung's failure
rates are well below 50 FITs, which is acknowledged by customers and competitors alike as among the industry's elite.

9.1 Long Term Life Test Results

~
TR

Test Item

Steady State Operation Life

High Temperature Storage Life

Test Condition

Ta=T,(max_) Vca=VcBoxO.8
1000 HR~

Ta =1l!5°C, 150°C
1000 HRS

Application

Number
of
Samples

Number
of
Failures

Failure
Rate
(FIT)

Number
of
Samples

Number'
of
Failures

Failure
Rate
(FIT)

Small Signal

1228

4

8

430

2

14

Power

1056

16

33

708

1

6

Note 1) FIT: Failure in time or failure unit; represents the number of failures expected per 10' (one billion) device
hours (at 55°C).
2) TR: Transistor

c8

SAMSUNG SEMICONDUCTOR

25

QUALITY .'

A,SS~RANCE

·and RELIABILIT:Y"·PROGRAM
.
.
..
,

"

,"-

-,

,

9.2 Eriv.ironmental Test Resutls
Test Item

High Temp/High Humidity

S

Thermal Shock
85°C, 85% R.H, VCBO)( 0.8

Failure Number Number
of
Rate
of
(%1
Sam'ples Failures
Samples Failures
1KHRS)
Number Number
of
of

Application

TR

Pressure Cooker

Failure
Number Number
of
Rate
of
(%1
Samples Failures
168HRS)

Failure
Rate
(%1
200CYC)

Small Signal

880

2

0.23

1020

12

1.2

1263

0

0

Power

346

1

0.29

404

6

1.5

576

1

0.17

10. Product' Outgoing Quality Levels
The quality of Sam sung products reaching customers has improved steadily over the years. Nearly .on qrder of magnitude
reduction in outgoing product. PPM levels has been achieved from 1 983· 7. Results can be seen below ..
.
.
.
Average Outgoing Quality, or AOQ, is measured by the Quality Assurance Department. Prior to release, product is sam'pled
according to MIL·STD 1050. Both electrical and visual/mechanical inspections occur. If inspection standards are met, pro·
duct is approved for sales. Depending on the nature of the failure(s), rejected samples can cause an entire lot to be 100%
tested and/or inspected, re·worked to screen out defective devices, or scrapped.
Electrical testing is typically done to product specification limits, guardbanded by a fixed percentage. Visual/mechanical in·
spection is performed to check for key package, marking, and lead parameters. (More extensive details are provided in Chapter
3, Assembly process control)
Although Samsung's AOQ levels are acceptable, efforts are constantly underway to reduce the figures (thereby increasing
outgoing quality).
' .
Enhanced focus on statistical process control in the manufacturing operation should help Samsung achieve it's goal of 50
PPM in 1988.
.

Samsung Product Electrical AOQ levels.
(in PPM)
Product Family
5mBII-~ignal

Transistor
Power· Transistor

1983

1984

1985

1986

19~7

526

509

308

150

45

1289

578

664

'101

968

Samsung Product Visual/Mechanical AOQ Levels
(in PPM)
1983

1984

·1985

1986

1987

Small-Singal
Transistor

362

816

596

129

57

Power Transistor

452

1589

1297

i96

140

Product Family

.c8

SAMSUNG

S~MICONDUCTOR

26

QUALITY ASSURANCE and RELIABILITY PROGRAM
3000,-~--------------~--------------------------------,

D.

2500

2000

D.
1500
(PPM)

1000

500

O~--------~------~--------~------~--------~--~
'86
'84
'85

'83

'87

(YEAR)
Note: Total=Electrical + Visual/Mechanical
SIS TR=Smail Signal Transistor
PWR TR=Power Transistor

o--S/STR

D ...... ·PWRTR

Fig. 3. Total AOQ Levels

c8

SAMSUNG SEMICONDUCTOR.

27

.. NOTES

FUNCTION GUIDE

TRANSISTORs
1. SMALL SIGNAL TRANSISTORS
1.1 General Purpose Transistors
1.1.1 80T-23 Type Transistors
Condilion

Device and Polartly (Marking)
NPN

MMBTA06(lG)
MMBTA05(lH)
KSC1623(C1X)

PNP

MMBTA56(2G)
MMBTA55(2H)
MMBT2907A(2F) .
KSA812(Dl X)
BCW69(H1)
BCW70(H2)

MMBT3903(1Y)
MMBT3904(1 A)
MMBT4401(2X)
MMBTA20(1C)
MMBC1622D6(D6)
MMBC1622D7(D7)
MMBC1622D8(D8)
BCW60A(AA)
BCW60B(AB)
BCW60C(AC)
BCW60D(AD)
MMBT2222(1 B)
KSC2859(E1X)
. MMBT4123(5B)
KSC3265(K1X)
MMBC1 009Fl (F1)

=8

(A)

hFE

Condition

Ie
Ie
Is
(V) (mA) MIN MAX (mA) (mA)

VeE

80
60
60
50
45
45
45
45
45
45
45

0.1
0.1
0'.1

BCX71 G(BG)
BCX71H(BH)
BCX71J(BJ)
BCX71K(BK)

100
10
100
10
500
50
10
100
10 0.5
10 0.5

VeE (..I~ VIE (..I) (V)
VeE(IIt)
MAX

0.25
0.25
1.6
0.3
0.3
0.3

VIE (..I)
MAX

2.6
1

Condition

1--VeE Ie
(V) (mAl

fr(MHZ)
MIN

2
2
20
6

10
10
50
10

5
5·

125
125
125

250

0.1
0.1

2
2
2
2
2

110
200
120
180
250

220
450
220
310
460

50
50
50
50
50

2.5
2.5
1.25
1.25
1.25

0.55
0.55
0.55

1.05
1.05
1.05

5
5
5

10
10
10
10
10

45
45
45
45
45

0.1
0.1
0.1
0.1
0.1

5
5
5
5
5

2
2
2
2
2

380
120
180
250
380

630
220
310
460
630

50
50
50
50
50

1.25
1.25
1.25
1.25
1.25

0.55
0.55
0.55
0.55
0.55

1.05
1.05
1.05
1.05
l.05

5

10

125

MMBA811C5(C5)
MMBA811C6(C6)
MMBA811C7(C7) .
MMBA811C8(C8)
MMBA812M3(M3)

45
45
45
45
40

0.05
0.05
0.05
0.05
0.1

3
3
3
3
6

0.5
0.5
0.5
0.5
1

135
200
300
450
60

270
400
600
900
120

20
20
20
20
30

2
2
2
2
3

0.3
0.3
0.3
0.3
0.5

6
6
6
6

1
1
1
1

75
75
75
75

MMBA812M4(M4)
MMBA812M5(M5)
MMBA812M6(M6)
MMB.A812M7(M7)

40
40
40
40
40

0.1 6
1
0.1 6
1
1
0.1 6
0.1 6
1
0.6 10 150

90
135
200
300
100

180 30
270 30
400 30
600 30
300 500

3
3
3
3
50

0.5
0.5
0.5
0.5
1.6

MMBT2907(2B)
MMBT3906(2A)
MMBT4403(2T)
MMBTA70(2C)

40
40
40
40
40

0.6 10 150 100 300 500
0.2 1
10 50 150 50
0.2 1
10 100 300 50
0.6 1 150 100 300 500
0.1 10
5 40 400· 10

50
5
5
50
1

1.6 .
0.3
0.3
0.75
0.25

BCW61A(BA)
BCW61B(BB)

35
35
35
32
32

0.1
0.1
0.1
0.1
0.1

BCW61C(BC)
BCW61D(BD)
KSAl182(F1X)
MMBT41 25(ZD)
KSA 1298(J1 X)

!?

200
300
450
120
180

400 100
10
600 100
10
10
900 100
220 50 1.25
310 50 1.25

0.3
0.3
0.3
0.55
0.55

32
0.1 5
2 250
0.1
32
5
2 380
0.6 10 150 100
30
30
0.5 1 100 70
2 50
30
0.2 1
25
0.8 1 100 100
25 0.05 3 0.5 30

460 50 1.25
630 50 1.25
300 500
50
240 100
10
150 50
5
320 500
20
1
60 10

0.55
0.55
1.6
0.25
0.3
0.4
0.3

SAMSUNG SEMICONDUCTOR

3
3
3
5
5

0.5
0.5
0.5
2
2

300
300

2.6

20

20

300

2.6
0.95
0.95
1.2

20
20
20
10
10

50
10
10
10
5

200
250
300
250
125

6

1
1
1
10
10

100
100
100
125
125

1.05
1.05
1.05
1.05
2.6
0.95

6
6
5
5
5
5
20
6
20
5
6

n'P

100
100
200

5
5
5
5

BCX70K(AK)

MMBC1623L3(L3)

Ie

0,5 1 100 50
0.5 1 100 50
0.6 10 150 100 300
0.1 6
1 90 600
0.1 5
2 120 260
0.1 5
2 215 500

BCW71 (Kl)
BCW72(K2)
BCl.(70G(AG)
BCX70H(AH)
BCX70J(AJ)

MMBC1623L4(L4)
MMBC1623L5(L5)
MMBC1623L6(L6)
MMBC1623L7(L7)
MMBT2222A(1 P)

VCEO
(V)

10 125
10 125
20 200
20
200
10 250
120
10
1 150

31

I

FUNCTiON GUIDE

·TRANSISTORs
SOT-23 Type Transistors (Continued)
Condition

hFE

. Device and Polarlly (Morlclng)
NPN

PNP

~MBC1009F2(F2)

MMBC1009F3(F3)
MMBC1(109F4(F4)
MMBC1009F5(F5)
MMBT4124(ZC)

MMBT4126(C3)
BCW29(Cl)
BCW30(C2)

BCW31 (01)
BCW32(02)
BCW33(03)

VCEO
(V)

Ic·
(A)

Condition

VCE
Ic
Ic
la
(VI (mA) MIN MAX (mA) (mA)

25
25
25
25
25

0.05
0.05
0.05
0.05
0.2

3
3
3
3
1

20
20
20
20
20

0.1
0.1
0.1
0.1
0.1

5
5
5
5
5

·0.5 40 80
0.5 60 120
0.5 90 180
0.5 135 270
2 120 360
2
2
2
2
2

120
215
110
200
420

260
500
220
450
800·

10
10
10

VCE (..I~ VaE (oal) (V)
VCE(oal)
MAX

,0
50

1
1
1
1
5

0.3
0.3
0.3
0.3
0.3

10
10
10
10
10

0.5
0.5
0.5
0.5
0.5

0:3
0.3
0.3
0.3
0.3

V.. (oal)
MAX

0.95

~n~
VCE Ic
(VI (mA)

6
6
6
6
20

fr (MHz) .

MIN

TYP

150·
150
1 150
1 150
10 300
1
1

1.1.2 TQ-92S Type Transistors
Condition

hFE

Device and Polarity
PNp·

NPN

KSAl150
KSA1378
KSB81 0
KSB811
KSC2710
KSC3488
KS01020
KS01021

VCEO
(V)

Ic
(A)

20
25
25
25
20
25
25
30

0.5
0.3
0.7
1
0.5
0.3
0.7
1

VCEO
(VI

Ic
(A)

VCE Ie
(V) (mA) MIN

1
1
1
0
1
1
1
1

100
50
100
100
100
50
100
100

MAX

Condilion
Ic
(mA)

400 500 50
400 300 30
400
700 70
400 1000 100
400 500 50
400 300 30
400
700. 70
400 1000 100

40
('0
70
70
40
70
70
70

VCE (sal), V.. (oal) (V)

la
VCE(oal)
(mA) TYP MAX

VaE(oal)
TYP

0.3 0.4 1
0.35 0.6
0.25 0.4 0.95
0.5
0.18 0.4
0.14 0.4
0.2 0.4 0.95
0.5

Condition

~CE

fr(MHz)

Ic
(mA) MIN TYP

MAX

(V)

1.3

6

10

1.2
1.2

6
6

10
10

50 ·160
110

1.2
1.2

6
6

10
10

50 170
130

1.1.3 TQ-92 Type Transistors
Condilion
Device and Polarlly

hFE

VCE Ic
(V) (mA) MIN

Ie
(mA)

NPN

PNP

MPSA06
MPS8099
KSC2003
KS01616A

MPSA56
MPS8599
KSA954
KSB1116A

80
80
80
60

0.5
0.5
0.3
1·

1
5
1
2

100 50
1100
50 90
100 135

100
300 100
400 300·
400 1000

MPS8098
MPSA05

KSA708
. MPS2907A
MPS8598
MPSA55

60
60·
60
60

0.7 2
0.6 10
0.5 5
0.5 1

50 40
150 100
r 100
100 50

240
300
300

KSC2002
KSC853
KSD1616
KSC1072
KSC815
889014

KSA953
KSA545
KSB1116
KSA707
KSA539
889015.

60
60
50
45
45.
45

0.3
0.2
1
0.7
0.2
0.1

KSC1008

c8

MAX

Condilion
la
(mA)

VCE (sal),
VeE (sal)
MAX

v.. (sal) (V) ~~
VaE(sal)
MAX

2 10 100
5 10 150
6
10 50 100
2 100 70

10
10
30
50

0.25
0.3
0.6
0.3

500
500
100
100

50
50
10
10

0.7
1.6
0.3
0.25

1.1
2.6

10
20
5
2

1 .50 90 400 300
1
50 40 400 150
2 100 135 600 1000
2
50 40. 240 500
1 0.05 40 240 150
5
1 60 1000 100

30
15
50
50
15
5

0.6
0.5
0.3
0.7
0.5
0.3

1.2
1.2
1.2
1.1
1.2
1

6

SAMSUNG SEMICONDUCTOR

1.2
1.2

fr (MHz)

VCE Ie
(V) (mA) MIN TYP

50
50 200
10 150
10 100

50

10

50 100

2 100

70 100

5

10 150 270

32

TRANSISTORs

FUNCTION GUIDE

TO-92 Type Transistors (continued)
Condition

hFE

Device and Polarlly
NPN

MPS6602
2N4401
MPS2222A
2N4400
2N3903
2N3904
MPS6513
MPSA10
MPSA20
KSC1330
KS0471A
MPS3705

PNP

2N4403
MPS2907
2N4402
2N3905
2N3906
MPS6517
MPSA70

MPS3703

MPS3704
MPS2222
KSC921
KSC839
SS9011
SS8050
MPS6601
MPS6580
KS0227
MPS5172
KSC184
MPS3706
KS0261
SS9013

VCEO
(V)

Ic
(A)

VCE
(V)

Ic
(mA) MIN

MAX

Condition
Ic
(mA)

la
(mA)

VCE

(sal~

1.2
2.6
1.2
0.95

10
10
20
10
20

50
20
20
20
10

0.95

20

10 300

10
10
6
6
5

5 125
5 125
10
30Q
130
10
50 100

2
20
10
10

50 100
20 250
1 100 250
1 80 200

10
10
10

50 100 190
10
110
50 100
50 100
10 60

1
1 500 50
0.6 1 150 100
0.6 10 150 100
0.6 1 150 50
0.2 1
10 50

300
300
150
150

1000 100
500 50
500 50
500 50
50
5

0.6
0.75
1.6
0.75
0.3

40
40
40
40
40
30
30

0.2 1
10100
0.1 10
2 90
0.1 10
5 40
0.1 10
5 40
0.1 6
1 70
1
1 100 70
0.6 5
50 30

50
300
5
180
50
5
400
400
400
30
3
400 1000 100
150
50
5

0.3
0.5

0.5
0.5
0.25

1.2

30
0.6 2
50 100
30
0.6 10 150 100
30
0.1 10
2 40
30
0.1 12
2 40
30 0.03 5
1 28

300
300
240
400
198

5
50
1
1
1

1.6
0.6
0.4
0.3

2.6

SS8550
KSB564A
MPS6651
MPS3702
MPS6562
KSA642

25
25
25
25
25
25
25

300 800 80
4QO 1000 100
1000 100
300
50 50
200 500 50
400 300 30
500
10
l'

0.5
0.5
0.6
0.25
0.5
0.6
0.25

1.2
1.2

KSA542

25 0.05
20
0.6
0.5
20
20
0.5

20
100
500
500

0.3
1
0.4
0.6

KSA643
SS901.2

1.5
1
1
0.6
0.5
0.3
0.1

100 85
100 70
500 50
50 60
500 50
50 70
10 100
1
50
100
50

40
30
40
64

400
600
400
202

2
5
50
50

~~ IT (MHz)

VaE (S.I)
MAX

40
40
40
40
40

100
500
10
10
10

V.., (sal) (V)

VCE (sal)
MAX

VCE
(V)

5

Ic
(mA) MIN TYP

100
200
300
200
250

2

1.3
1.2

6
2
1
1

120

1
100
50 100

1.1.4 TO-92L Type Transistors
Condition

~,--

Device and Polarity
NPN

KSC2326A
KSC2331
KSC2500

PNP

KSA928A
KSA931

VCEO
(V)

Ic
(A)

30
60
10

2
0.7
2

VCE Ic
(V) (mA) MIN

2
2
1

•• SA~SUNG ,SEMICONDUCTOR
cas
•

hFE

MAX

Condition

Ic
(mA)

la
(mA)

500 100 320 1500 30
50 40 240 500 50
500 140 600 2000 50

VCE (sal), VaE (sal) (V)
VCE(sal)
MAX

2
0.7
0.5

VaE(SlI)
MAX

1.2

Condition

1--VCE
(V)

Ic
(mA)

2 500
10 50
1 500

IT (MHz)
MIN

TYP

120
100
150

33

I

FUNCTION GUIDE

.,TRANSISTORs
1.2 Low Noise Transistors
1.2.1S0T-23 Type Transistors

NPN

hFE

Condition

Device and Polarlly (Markl"" .
PNP

MAX

MMBT6428(lK)
MMBT6429(1 L)
MMBT2484( 1U)

4
4
3
3
3
2
2

MMBT5086(2PI
'MMBT5088(10)
MMBT5087(20)
MMBT5089(1 R)

CondlUon
Frequency

VCEO

Audio,

50
45
60
50
30
50
25

(V)

AUdio
Audio
Audio
Audio
Audio
Audio

Ic
(AI

VeE

0.2
0.2
0.05

5
5
5
5
5
5
5

0.05
0.05
'0.05
0.05

(V)

Ie
(mAl
0.1
0.1
1
0.1
0.1
0.1
0.1

MIN

MAX

250
500
250
150
300
250
400

650
1250
500
900
800
1200

Condition

Ve.....~VI

Ic
(mAl

I.
(mAl

Veaaall
MAX

100
100
1
10
10
10
10

5
5
0.1

0.6
0.6
0.35

1
1
1
1

0.3
0.5
0.3
0.5

1.2.2 TO-92S Type Transistors
Devlca and Polarlty(Marklngl

NPN

NF(dBI

PNP

TYP

KSAl175
KSC2785

'6
4

Ie

Condition

(VI

(AI

Vee
(VI

Ie
(mAl

MIN

50
50

0.15
0.15

6
6

1
1

40
40

VelO

Condilion
Frequency
Audio
Audib

hFE

Condition

Condilion

V..(aall

I,(MHzI

MAX

Ie
(mAl

(mAl

MAX

(V)

Ie
(mAl

700
.700

100
1'00

10
10

0.3
0.3

6
6

10
10

VeE

Is

MIN

TYP
180
300

Audio = 10Hz to 15. 7KHz

1.2.3 TO-92 Type Transistors
;

Device and Polarity
NPN

'PNP

2N6428·
2N4123
2N4125
2N4124
KSC945

KSA733
2N4126
MPS4249
2N5086

2N5088
MPS6522
MPS6520
MPS6523
MPS6521
MPS4250A
2N5087
MPS4250
2N5089
2N6428A
2N5210
2N5209
MPS8097
KSC1222
KSC900

KSA640

NF(dBI
Condillon

Condillon

Frequency

(V)

Ic
(AI

6
6
5
5
4

Audio
Audio
Audio
Audio
Audio

50
30
30
25
50

0.2
0.2
0.2
0.2
0.15

5.
1
1
1
6

4
3
3
3
3

Audio
Audio
Audio
Audio
Audio

25
60
50
30
25

0.2

3
3
3
2
2

Audio
Audio
Audio
Audio
Audio

25
25
25
60
50

0.05

2
2
·4
·2
·2

Audio
Audio
Audio
Audio
Audio

40
25
50
.50
50

0.05
0.2
0.05
0.05

5

·2

Audio
Audio
Audio

40
45
25

0.2
0.05
0.05

TYP

**40
··30

VCEO

0.05
0.05
0.1
0.1
0.1
0.1

VCE
(V)

Ic
(mAl

Condillon

hFE
MIN

MAX

,saturation Voitegalv)
Vca..11
MAX

Ie
(mAl

I.
(mAl
5
5
5
5
10

0.6
0.3
0.4
0.3
0.3

0.1 250
2
50
2
50
2 120
1· 40

650
150
150
360
700

100
50
50
50
100

1
5
5
'5
10

2
0.1
0.1
0.1
2

120
100
150
300
200

360
300
500
900
400

50
10
10
10
50

5
0.5
l'
1
5

0.4
0.25
0.3
0.5
0.5

10
10
10
5
5

2
2
2
0.1
0.1

200
300
300
250
250

400
600
600
700
800

50
50
50
10
10

5
5
5
0.5
'1

0.5
0.5
0.5
0:25
0.3

5
5
5

0.1
0.1
0.1
0.1
0.1

250
400
250
200
100

700
1200
650.
600
300

10
10
100
10
10

0.5
1
5
1
1

0.25
0.5
'0.6
0.7
0.7

5
3
3

0.1
0.5
0.5

250
120
120

700
1000
1000

20
20

2
2

5

0.3
0.2

Audio=10Hz to 15.7KHz
·=~AX, .. *==Noise Level

ciS· SAMSUNG SEMICONDUCTOR

34

FUNCTION GUIDE

TRANSI$TORs
1·3. RF/VHF/UHF Amplifier Transistors
1-3·1. SOT·23 Type Transistors
Condition

IT

Cob
(pF)

Device

Ve•

Ie

NPN

(V)

(mA)

MIN

TYP

KSC2734(H8Z)
KSC3120(H9Z)
KSC2759(H6X)
MMBR5179
KSC2757(H3X)
KSC2758(H4Z)
MMBTH10(3E)

10
10
10
6
10
10
10

10
2
5
5
5
3
4

1400
1500
1250
900
800
750
. 650

KSC2756(H2X)
MMBTH24(3A)
KSC2755(Hl X)
KSC2223(H5X)
KSC3125(A1Z)
KSC2715(B1X)

w
10
10
6
10
10

5
8
3
1
10
1

500
400
400
400
250
100

VCEO

MAX

(V)

3500
2400
2000
2000
1100
1000

1.5
#0.9
1.3
@1
1.5
0.8
@0.7

12
15
14
12
15
25
25

850
620
600
600
600

#0.5
@0.36
#0.5
*1
1.6
3.2

20
30
30
20
25
30

h,.

Condition

Gpe
(dB)

NF(dB)

(mA)

Condilion
Gain
Reduction

MAX

(dB)

11

30

12

30

'AGe

[--

MIN

$12
&10
15
14
$15
$19
20

27

Condilion

Ve•

Ie

(V)

(mA)

10
10
10
1
10
10
10

5
5
5
3
5
3
4

10
10
10
6
10
12

5
8
3
l'
10
2

MAX

I(MHz)

*8

800'

4.5

200

4.5

900 .

240

*6.5

200

240
180
200
240

3
*3

200
100

MIN

MAX

20
40
40
25
60
60
60

200
200
180
250
240
240

60·
30
60
40
20
40

I

I

1.3.2' TO-92S Type Transistors
Device

(NPN)
KSC2669
KSC2786
KSC2787

Condition
VCE
(V)

fr(MHz)

Ic
(rnA)

10
6
6

1
1
1

MIN
100
400
150

C~
(p)

T\'p

MAX

250
600
300

3.2
*1.2
2.5

VCEO
(V)

OPE
(dB)
MIN

30
20
30

18

Condition

NF(dB)

hFE

VCE
(V)

Ic
(rnA)

MIN

12
6
6

2
1
1

40
40
40

TYP

MAX

MAX

Condltion
frlMHz)

240
240
240

5

100

---'----'-

1-3-2 TO-92 Type Transistors
Condition

IT

Cob
(pF)

Device
NPN

MPS5179
- KSC1730
MPSH17
KSC1070*' *
SS9018
MPSHll
MPSH10
KSC1395
MPSH24
K$C1393

VeE

Ie

(V)

(mA)

MIN

TYP

6
10
10
10
5

5
5
5
3
5

900
800
800
750
700

2000
1100

10
10
10
10
10

4
4
5
8
3

VCEO

Gpe
(dB)

o

Condition
VeE

Ie

h..

~

Condition

Condilion

(mA)

Reduction

MAX

(dB)

.NF(dB)

Gain

MAX

(V)

MIN

(V)

(mA)

MIN

MAX

MAX

I(MHz)

12
15
15
25
15

15

1
10
10
10
5

3
5
5
3
1

25
40
25
40
28

250
240
250
200
198

4.5

200

1000
1100

@1
1.5
@0.9
0.8
1.7

6
4

200
900

11

30

650
650'
600 1100
400
620
700
400

@0.7
@0.7
1".5
@0.36
#0.5

25
25
15
30
30

10
10
10
10
10

4
4
5
8
2

60
60
40
30
40

240.
240

3

200

12

30

10
10
5
10
.10'

2
4
1
2
2

40
25
28
40
40

240

3.5

200

198
240
240

5

100

1
12.5
1
2

40
20
40
40

240
200
240
240

5

100

KSC1394
MPSH20
SS9016
KSCl187
KSCl188

10
10
5
10
10

3.
4
1
3
3

400
400
400
400
400

#0.5
700
620 @0.65
620
1.6.
700 #*0.6
700
1

KSC1674
KSC388
KSC1675
KSC838

6
12.5
6
10

1
12.5
1
1

400
300
150
100

600
300
250

*1'.5
2
2.5
3.2

*24
14

$19
20

30
30
20
20
20

20
$18

20
25
20
30

18
28

20
20

6
12
6
12

* =TYP, #=Cre, @=Cob, $=Gce, &=Gcb, *. * * = DISK TYPE TRANSISTOR

c8

SAMSUNG SEMICONDUCTOR

35

TRANSISTORs

FUNCTION GUIDE

1-4. 'High Voltage Transistors
1-4-1. SOT-23 Type Transistors

NPN
MMBTA42(1D)
MMBTA43(1E)

Condition

Veeo

Device and polarltr(Marklng)

(V)

PNP
MMBTA92(2D)
MMBTA93(2E)
MMBT5401 (2L)

MMBT5550(1 F)

300
200
150
140

Vc.
(V)

Ie
(rnA)

MIN

0.5
10
0.5
10
0.5. 15
0.6
5

30
30
10
10

40
40
60
60

(A)

Condilioh

hFE

Saturation
Voltage(V)

Condilion

MAX

Ie
(rnA)

I.
(rnA)

VCE
MAX

V••
MAX

Vc.
(V)

Ie
(rnA)

240
250

20
20
50
50

2
2
5
5

0.5
0.5
0.5
0.25

0.9
0'.9
1
1.2

20
20
10
10

10
10
10

HI

fT(WIHz)

MIN

'TYP

50
50
100
100

1-4-2, TO-92S Type Transistors
Device and pola,IIy(Ma,ldng)

Condilion
VOiO

NPN

. (V)

PNP
KSA1174

KSC2874

Ic
(A)

120 0.05
120 0.05

Ie
(rnA)

6
6

1
1

MIN

Vc.(sal), V••(saIKV)

Condition

hFE

Vc.
(V)

MAX

200 800
200 1200

Ie
(rnA)

I.
(rnA)

10
10

1
1

VeE(sal)
TYP MAX
0.09
0.07

TYP

t,(MHz)

Condition

V.dSBI)

MAX

0.3
0.3

(V)

Ie
(rnA)

MIN

TYP

6·
6

1
1

50
50

100
110

Vee

1-4-3. TO-92 Type Transistors
Device and pola'ily(Ma,klng)
NPN
MPSA44
2N6517
MPSA45
MPSA42
2N6516
KSC1506
2N6515
MPSA43
2N5551

PNP

2N6520
MPSA92
2N6519

2N6518
MPSA93
KSA709
2N5401

KSC1009
2N5550
2N5400
MPSL01
KSC1845

KSA992
MPSL51

V CEO

h,.

Condition

Ic

Condilion

(V)

Ie

(A)

VeE

(V)

Ie
(rnA)

400
350
350
300
300

0.3
0.5
0.3
0.5
0.5

10
10
10
10
10

10
30
10
30
30

0.1

10
10
10

40
50
40
80
40
60

240
300

40
60
40

300
250
200
160
150
150
140
140
120
120
120
100

'0.6
0.1'
0.6

5
2
5

10
30
30
10
50
10

0.7
0.6
0.6
0.15
0.05
0.6

2
5
5
5
6
5

50
10
10
10
1
50

.0.5
0.5

saturation

Voltage(V)
VeE
V••
MAX MAX

MAX

Ie
(rnA)

I.
(rnA)

50 200
30 ·200
50 200
40
45 270

10
30
10
20
30

1
3
1
2
3

0.5
0.5
0.5
0.5
0.5

250
240.
240

50
30
20
50
200
50

5
3
2
6
20
5

2
0.5
0.5
0.2
0.4
0.5

240
250
180
300
800
250

200
50
50
50
10
50

20
5
5
5
1
5

0.2
0.25
0.5
0.3
0.3
0.3

MIN'

50
200
40

Condilion

'T{MHz)

VeE
(V)

Ie
(rnA)

0.75
0.9
0.75

20

10

40

0.,9.
0.9

20
20

10
10

50
40

0.9
0.9
1
1
1

30
20
20
10
10
10

10
10
10
10
50
10

40
40
50
100

10
10
10
10
6
10

50
10
10
10
1
10

30
100
100

0.86
1.2
1
1.4
1.2

MIN

TYP

80

50
100

60
50
60

50

100

1-4-4. TO-92L Type Prans/stors

NPN
KSC2340
KSC2330
KSC2383
KSC2310
KSC2316

c8

PNP

KSA1013
KSA91 0
KSA916

h,.

Condition

VCiD

Oevlca and pola,IIy(Ma,klng)

Condition

Ie
(V)

(A)

VeE
(V)

Ie
(rnA)

MIN

MAX

Ie
(rnA)

I,
(rnA)

350
300
160
150
120

0.1
0.1
1
0.05
0.8

10
10
5
5
,5

20
20
200
10
100

30
40
60
40
80

150
240
320
240
240

10
10
500
10
500

1
1
50
1
50

SAMSUNG SEMICONDUCTOR

Saturation

Vollage(V)
Vcelsal)
V.eI.al)
MAX
MAX
0.5
0.5
1.5
0.8
1

10

Condition

VeE
(VI

Ie
(rnA)

20
30·
5
30

50
10
200
10
10'0

5

'T(MHz)

MIN

15

TYP

50
50
100
120

36

TRANSISTORs

FUNCTION GUIDE

1-5. Darlington Transistors
1-5-1. SOT-23 Type Transistors.
Ve..

Ie

Device end polarHy(Marklng)
NPN

PNP

(V)

MMBTA63(2U)
MMBTA64(2V)

'40
30
30
30
30

MMBT6427(lV)
MMBTA13(lM)
MMBTA14(lN)

(A)

0.5
0.3
0.3
0.5
0.5

Condition

Ve•

Ie

(V)

(mA)

5
5
5
5'
5

100
100
100
100
100

Condition VedsatlV••(oatKv)

h"

MIN

MAX

20K 200K
10K
10K
10K
10K

,--

Condition

Ie

I.

Veolsat)

V,olsat)

VeE

Ie

(mA)

(mA)

MAX

MAX

(V)

(mA)

MIN

1.5
1.5
1.5
1.5
1.5

2'
5
5
10
10

10
10
125
125

125
125

0.5
0.1
0.1
0.1
0.1

500
100
100
100
100

5
5

TYP

*: VCEO

1-5-2. TO-92 Type Transistors.
Device and Polarity
NPN

PNP

MPSA27
MPSA77
MPSA26
MPSA76
2N6427
MPSA75
MPSA25
MPSA14
MPSA13
MPSA12'

MPSA64
MPSA63
MPSA62

h.,

Condition

Ve..

Ie

VeE

Ie

(V)

(A)

(V)

(mA)

MIN

60
60
50
50
*40 •

0.5
0.5
0.5
0.5
0.5

5
5
5
5
5

100
100
100
100
100

40
40
30
30
20

0.5
0.5
0.5
0.5
0.5

5
5
5
5
5

100
100
100
100
10

Condition

Condition Veolsat)V.ElsatKV)

'T(MH,j

,
Ie

I,

Veolsat)

Vaols.t)

VeE

Ie

(mA)

(mA)

MAX

MAX

(V)

(mA)

MIN

10K
10K
10K
10K
20K 200K

100
100
100
100
500

0.1
0.1
0.1
0.1
0.5

1.5
1.5
1.5
1.5
1.5

2

10K
10K
10K
20K
20K

100
100
100
100
10

0.1
0.1
0.1
0.1
0.01

1.5
1.5
1.5
1.5

5
5

10
10

125
125

MAX

TYP

1

*; VCEO

1-6. Digital Transistors
1-6-1.

SOT~23

Type Transistors

Device and Polarity

Rl

R2

Condition

Ie

vc£o

VeE

Ie

hFE

NPN

PNP

KII

KII

(V)

(mA)

(V)

(mA)

MIN

KSR1101
KSRll02
KSRll03
KSR1104
KSRll05
KSRll06
KSR11'07
KSRll08
KSRll09
KSRlll0
KSRll11
KSR1112
KSR1113
KSR1114

KSR2101
KSR2102
KSR2103
KSR2104
KSR2105
KSR2106
KSR2107
KSR2108
KSR2109
KSR2110
KSR2111
KSR2112
KSR2113
KSR2114

4.7
10
22
47
4.7
10
22
47
4.7
10
22
47.
2.2
4.7

4.7
10
22
47
10
47
47
22

50
50
50
50
50
50
50
50
40
40
40
40
50
50

100
100
100
100
100
100
100
100
100
100
100
100
100
100

5
5
5
5
5
5
5
5
5
5
5
5
5
5

10
4
5
5
5
5
5
5
5
1
1
1
5
5

20
30
56
68
30
68
68
56
100
100
100
100
68
68

c8

47
47

SAMSUNGSEMICONDUcrOR'

MAX

600
600
600
600

Condition

V(satKV)

Condition

Veolsat).

VeE

Ie

MAX

(V)

(mA)

TYP

0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3·
0.3
0.3
0.3
0.3

10
10
10
10
10
10
10
10
10
10
10
10
10
10

5
5
5
5
5
5
5
5
5
5
5
5
5
5

250/200

Ie

I.

(mA)

(mA)

TYP

10 0.5
10 0.5
10 0.5
10 0.5
10 0.5
10, 0.5
10 0.5
10 0.5
10
1
1
10
1
10
1
10
10 0.5
10 .0.5

0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1

',(MHz)

250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200

.37

TRANSISTORs·
1~-2.

FUNCTION GUiDE

TO-928 Type Transistors
,

Device and Polarily
NPN

•

KSR1201
KSR1202
KSR1203
KSR1204
KSR1205
KSR1206
KSR1207
KSR1208
KSR1209
KSR1210
KSR1211
KSR1212
KSR1213
KSR1214

PNP

KSR2201
KSR2202
KSR2203
KSR22Cl4
KSR2205
KSR2206
KSR2207
KSR2208
KSR2209
KSR2210
KSR2211
KSR2212
KSR2213
KSR2214

Rl

R2

VCEo

h..

Condition

Ie

,VCEO

Ie

KO

KD

(V)

(mA)

(V)

(mA)

MIN

4.7
10
22
47
4.7
·10
22
47
4.7
10
22
47
2.2
4.7

4.7
10
22
47
10
47
47
22

50
50
50
50
50
50
50
50
40
40
40
40
50.
50

100
100
100
100
100
100
100
100
100
100
100
100
100
100

5
5
5
5
5
5
5
5
5
5
5
5
5
5

10
4
5
5
·5
5
5
5
5
1
1
1
5
5

20
30
56
68
30
68
68
56
100
100
100
100
68
68

47
47

MAX

800
600
600
600

Condillon

Ve.(saIKV)

I.

(mA)

(mA)

TYP

MAX

10
10
10
10
10
10
10
. 10

0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
0.5
0.5

0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1

10
10
10
10
10
0.3. 10
0.3 10
0.3 10
0.3 10
0.3· 10
0.3 10
0.3 10
.0.3 10
0.3 10

10
10
10
10
10
10

Ve.!sal)

Condllion

Ie

ft(MHz)

VeE

Ie

(V)

(mA)

TYP

5
5
5
5
5
5
5
5
5
5
5
5
5
5

250/200

0.3
0.3'
0.3
0.3
0.3

250/200
250/200
250/200
250/200
250/200
250/200
250/200
.250/200
250/200
250/200
250/200
250/200
250/200

1-6-3. TO-92 Type Transistors
Device and Polarity

NPH

KSR1001
KSR1002
KSR1003
KSR1004
KSR1005
KSR1006
KSR1007
KSR1008
KSR1009
KSR1010
KSR1011
KSR1012
KSR1013
KSR1014

.c8

PNP·

KSR2001
KSR2002
KSR2003
KSR2004
KSR2005
KSR2006
KSR2007
KSR2008
KSR2009
KSR2010
KSR2011
KSR2012
KSR2013
KSR2014

Rl

R2

KO

KO

4.7
10
22
47
4.7
10
22
47
4.7
10
22
47
2.2
4.7

4.7
10
22
47
10
47
47
22

47
47

VCEO

. Ie

hFE

Condilion
VeE

Ie

(V)

(mA)

(V)

(mA)

MIN

fiO

100
100
100
100
100
100
100
100
100
100
100
100
100
100

5

10
5
5

20
30
56
68
30
68
68
56
100
100
100
100
68
68

50
50
50
50
50
50
50
40
40
40
40
50
50

SAMSUNG SEMICONDUCTOR

5

5
5
5
5
5
5
5
5
5
5
5
5

5

'5
5
5

5
1
1
1
1
5
5

MAX

600
eOO

600
600

Condition

V(.aIKV) .

Condition

ft(MHz)

ti

VeE

Ie

MAX

(V)

(mA)

TYP

10 0.5 0.1 0.3 10
10 0.5 0.1 0.3 10
10 0.5 0.1 .0.3 10
10 0.5 0.1 0.3 10
10 0.5 0.1 0.3 10
10 0.5 0.1 0.3 10
10 0.5 0.1 0.3 10
10 0.5 .0.1 0.3' 10
10
1
0.1 0.3 10
10
1
0.1 0,3 10
10
0.1 0.3 10
1
10
1
0.1 0.3 10
10 .0.5 0.1 0.3 10
10 0.5 0.1 0.3 10

5
5
5
5
5
5
5
5
5
5·
·5
5
5
5

250/200

Ie

I.

(mA)

(mA)

ve,(••
TYP

250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200
250/200

38

FUNCTION GUIDE

TRANSISTORs
{7· JUNCTION FETS
1.7.1 80T-23 Type J·FET.
DEVICE

VGOO

IG

IDSS(~

Po
(mW)

MIN

MAX

Vos
(V)

KSK123

20

2

200

0.13

0.47

4.5

KSK211

18

10

200

1

10

10

(V)

(mA)

9m(mS)

VGS(OFF)
Vos

MIN

TYP

(V)

0.9

1.6

4.5

9

10

. (V)

10

Vos
(V)

lilA)

MIN

MAX

10

1

0.4

4

1.7.2 TO-928 Type J-FET
DEVICE

VGOO

IG

loss(~

Po

9m(mS)
VDS

(mW)

MIN

MAX

(V)

MIN

TYP

KSK65

12

2

20

0.04

0.8

4.5

0.3

0.5

4.5

KSK161

. 18

10

200

1

10

10

9

10

(V)

(rnA)

(V)

VOS(OFF)

Vos
MAX

Vos

10!/lA)

(V)

10

1

MIN

MAX

0.4

4

1.7.3 TO-92 Type J-FET
DEVICE

Vooo

IG

loss (mA)

Po

9m(mS)

Vos
(V)

(mA)

(mW)

MIN

MAX

(V)

MIN

KSK30

50

10

100

0.3

6.5

10

1.2

KSKl17

50

10

300

0.6

14

10

4

.c8

VGS(OFF)

(V)

~

SAMSUNG SEMICONDUCTOR

TYP

15

(V)

10
!/lA)

MIN

MAX

10

10

0.1

0.4

5

10

10

0.1

0.2

1.5

Vos

Vos

(V)

39.

TRANSISTORs

FUNCTION GUIDE

2. POWER TRANSISTORS
2-1. General Purpose Transistors
2.1.1 TO-126 Type Trans/stors
Ie

! VCEO

(A)' (V)

0.1

180

0.2 300

Device Type.
NPN

PNP

KSC2682 KSA1142

hFE
VeE
(V)

Ie
(A)

MIN MAX

18
(A)

40 250 0.05 0.005

0.5 300

MJE340

MJE350

1.2 120

KSC2690

KSA1220

5

0.3

60 320

KSC2690A KSA1220A
KSD882
KSB772
MJE180 MJE170

5

0.3

60 320

30
40

2
1

1
0.1

60 400
50 250

45

KSD794· KSB744

5

0.5

60 320

1.5

60

KSD794A KSB744A

5

0.5

60

1.5

MJE181

MJE171

1

0.1

50 250

3

80

MJE182

MJE172

1

0.1

MJE200

MJE210

.1

2

50 250
. 45 180

3

25

2

60

KSD1691

KSB1151

l

2

100 400

2

0.2

160
\

3

5

TYP

5 0.01 100 320 0.05 0.005 0.16
10 0.01

KSC2688

10 0.05

fT(MHz)

VCE(SAT) (V)
Ie
(A)

VeE
MAX (V)

Ie
(A)

0,5

10 0.02

1.5

30 0.Q1

Pe

MIN TYP

50

(W)

180

8

80

10

30 240

20
'1

0.2

0.4

0.7

1

0.2

0.4

0.7

5

2
3

0.2
0.6

0.3

0.5
1.7

5
10

0.15

0.5

2

5

0.5

2

5

1..7

10

0.1

0.6

1.7

10

0.2

0.75

10

0.6

0.1

5

175

20

0.2

1.1

20

·0.1
0.1

80

10
12.5

0.1

45

10

0.1

45
50

10
12'.5

0.1

50

12.5

0.1

65

0.2

50

15

0.3

20

2.1.2 TO-202 Type Transistors
Ie
(A)

VeEO
(V)

0.2 250
300
2

30
45

c8

Device Type
NPN

PNP

VeE
(V)

Ie
(A)

KSC1520

10 0.01

KSC1520A

10 0.01

KSC1096
KSC1098

KSA634
KSA636

5
5

fr(MHz)

V eE(SAT) (V)

hFE
MIN MAX

1
0.5

SAMSUNG SEMICONDUCTOR

Ie
(A)

18
(A)

TYP

40 240 0.05 0.005
40 240 0.05 0.005
40 240
40 240

1.5
1

0.15
0.1

VeE
MAX (V)

Pe

Ie
(~)

MIN TYP

(W)

2

30. 0.Q1

40

80

10

2

30 0.01

40

80

10

0.3

0.7

0.15

0.7

.

10
10

40

FUNCTION GUIDE

TRANSISTORs
2.1.3 TO-220 Type Transistors
Ic

Device Type
VCEO

(AI

(V)

NPN

0.2

300

KSC1507

1

hFE
VCE

PNP

(V)

Ic
(AI

10 0.01

fT(MHzI

VCE(SAT)' (VI '
MIN MAX

Ic
(AI

18
(AI

TYP

40 240 0.05 0.005

VCE
MAX (VI

Ic
(AI

Pc

MIN TYP

2

30

0.01

40

80

(WI
15

40 TIP29

TIP30

4

1

15

75

1

0.125

0.7

10

0.2

3

30

60 TIP29A

TIP30A

4

1

15

75

1

0.125

0.7

10

0.2

3

30

80 TIP29B

TIP30B

4

1

15

75

1

0:125

0.7

10

0.2

3

30

100 JIP29C

TIP30C

4

1

15

75

1

0.125

0.7

10

0.2

3

30

250 TIP47

10

0.3

30 150

1

0.2

0.1

10

0.2

10

40

300 TIP48

10

0.3

30 150

1

'0.2

0.1

10

0.2

10

40

350 TiP49

10

0.3

30 150

1

0.2

0.1

10

0.2

10

40

400 TIP50

10

0.3

30 150

1

0.2

0.1

10

0.2

10

40

1.5

150

KSC2073 KSA940

10

0.5

40 140

0.5

0.05

1.5

10

0.5

4

25

2

150

KSD401

KSB546

10

0.4

40 240

3

30

KSC1173 KSA473

2

0.5

70 240

2

0.2

40

TlP31

TIP32

4

3

10

3

0.375

55

KS0288

KSA614

5

0.5

60

TIP31 A

TIP32A

4

3

KS0880

KSB834

5

0.5

KSC1983

4

5

7

c8

1

0.1

10

50

3

0.375

60 200

3

0.3

5

0.5

100

1.2

10

0.5

3

40

10

0.5

3

40

5

0.5

9

30

15

30

0.5
1.2

0.5

25
10

25

4

0.05

1

12

0.2

TIP32B

4

3

10

50

3

0.375

1.2

10

0.5

3

100 TIP31.C

TIP32C

4:

3

10

50

3

0.375

1.2

10

0.5

3

5

1

30 150

4

0.4

1

5

0.5

.5

0.5

40 240

3

0.3

1.7

5

0.5

10

1

70 240

5

0.5

2

10

0.3

20

30

,5

5

20 140

5

0.5

1

5

0.5

10

40

0.6

60

KSC2233

80

KS0526

60

KS073

70

KS0362

KSB596

500

2

0.15

0.4

2

80 TIP31B

1.0

40
40
10

3

40
30

5

2

40 200

3

0.3

40 TIP41

TlP42

4

3

15

75

6

0.6

1.5

10

0.5

3

65

60 TIP41 A

TIP42A

4

3

15

75

6

0.6

1.5

10

0.5

3

65

80 TIP41B

TlP42B

4

3

15

'75

6

0.6

1.5

10

0.5

3

65

100 TIP41C

TIP42C

4

3

15

75

6

0.6

1.5

10

0.5

3

5

1

40 240

1

0.1

1

5

0.5

1

3

40 200

5

0.5

0.5

40

1

3

40 200

5

0.5

0.5

40

5

3

40 200

5

0.5

0.6

120

KS0363

60

KS0568

KSB707

80

KS0569

KSB708

30

KSC2334 KSA1010

150

BU407

5

0.5

1

10

0.5

10

BU407H

5

0.8

1

10

0.5

10

BU406

5

0.5

1

10

5

10

BU406H

5

0.8

1

10

5

10

BU408

6

1.2

1

10

5

10

4

0.4

1.1

10

0.5

2

60

MJE
3055T

MJE
2955T

4

4

20 100

SAMSUNG SEMICONDUCTOR

65
10

100

200

10

40 240

10
0.8

0.5

100 KSC2517
6

50

0.3

40

40
60

60

75

41

FUNCTION GUIDE

TRANSISTO,Rs
, 2·2. Darlington Transistors
2.2.1 T0-126 Type Transistors
Device Type

Ic

VCEO

(A)

(V)

Ic
(A)

Pc

(V)

Ic
(A)

MIN

MAX

Ic
(A)

la
(A)

60 KS09S5 KSB794

2

1

2K

3K

1A

0.001

1.5

Hi

SO KS09S6 KSB795

2

1

2K

3K

1A

0,001

1.5

10
15

VCE

1.5

fy(MHz)

VCE(SA1') (V)

hFE

NPN,

PNP

TYP

VCE
MAX (V)

MIN TYP

(W)

60 KS01693 KSB1150

2

1.5

2K

20K

1.5 0.0015 0.9

1.2

100 KS01692 KSB1149

2

1.5

2i<

20K

1.5 0.0015 0.9

f2

15

60 MJESOO MJE700

3

1.5

0.,75K

1.5

0:03

2.5

40

3

4

MJE701

3

2

0.75K

2

0.04

2.S

SO MJES02 MJE702

3

1.5

0:75K

1.5

0.03

2.5

MJES03 MJE703

3

2

0.75K

2

0.04

2.S

MJES01

40

2.2.2 TO·220 Type Transistors
Ic

hFE

VCEO

(A)
2

5

S

10

=8

VCE
(V)

Ic
(A)

IT

VCE(SA1) (V)
VCE
(A)

Ic
(A)

VCE
MAX (V)

Ic
(A)

Pc

NPN,

PNP,

60 TIP110

TIP115

4

2

0.5K

2

O.OOS

2.5

50

SO

TlP111

TIP116

4

2

0.5K

2

O.OOS

2.5

50

100

TIP112

TIP117

4

2

0.5K

2

O.OOS

2.5

50

60

TIP120

TlP125

3

3

1K

3

0.012

2

65

SO

TIP121

TIP126

3

3

1K

3

0.012

2

65

100 TIP122

(V)

MIN MAX

TYP

MIN TYP

(W)

TlP127

3

3

1K

3

0.Q12

2

65

KS0560

KSB601

2

3

2K

15K

3

0.003

1.5

30

60

TIP100

TlP105

4

3

1K

20K

3

0.006

2

SO

SO

TIP 1 01

TlP106

4

3

1K

20K

3

0.Op6

2

SO

100

TIP102

TIP107

4

3

1K

20K

3

0.006

2

SO

150 BUS07

5'

0.05

1.5

60

200

5

0.05

1.5

60
80

BUS06

60

TIP140T TIP145T

4

5

1K

5

0.01

2

80

TIP141T TIP146T

4

5

1K

5

0.01

2

100

TIP142T TIP147T

4

5

1K

5

0.01

2

SAMSUNG SEMICONDUCTOR

SO

,

SO

42

,FUNCTION GUI'DE

TRANSISTORs
2.2.3 TO-3P & TO-3P(F) Type Transistors
Ic

hFE

VCEO
PNP

NPN
10

Ie;
(AI

4

5

4

60 TIP140F TIP145F
TIP140

TIP145

80 TIP141F TIP142F
TIP141

TIP142

100 TIP142F TIP142F
TIP142

TIP147

IT

VCE(SAT)

VCE
(VI

Ic
(AI

18
(AI

VCE
TYP MAX (VI

1K

5

0.01

2

5

1K

5

0.01

2

4

5

1K

5

0.01

2

4

5

1K

5

0,01

2

4

5

1K

5

0.01

2

4

5

1K

5

0.01

2

MIN MAX

Pc

Ic
(AI

PKG

MIN TYP
60 TQ·3P(FI
125

TO·3P

60 TO·3P(FI
125

TO·3P

60 TO·3P(F)
125

TO·3P

I

2-3. Switching Transistors
VCEO Ic

(V)

(A)

Device

(NPN)

400 0.5 KSC2752

500

hFE
VCE
(VI
5

Ic
(AI

Switching Time

VCE(SAT)(V)

MIN MAX

0.05 20

Ie
(AI

18
(AI

ton

t.tg

Pc
Package

t,

Structure

MAX MAX MAX
TYP MAX !/.lSI !/.lSI !/.lSI (WI

80

0.3 0.06

1

1

2.5

1

10

TO·1,26

2

KSC2333

5

0.1

20

80

0.5

0.1

1

1

2.5

1

15

TO·220

5

KSC2518

5

0.5

20

80

2

0.4

1

1

2.5

0.7

40

TO·220

7

KSC2335

5

1

20

80

3

0.6

1

1

2.5

1

40

TO·220

10 KSC2749

5

1

15

80

6

1.2

1

1

2.5

0.7

100

TO·3P

15 KSC2751

5

2' 15

80

10

2

1

1

2.5

0.7 120

TO·3P

0.3

3

KSC5020

5

0.3

15

50

1.5

0.3

1

0.5

3

0.3

40

TQ-220

4

KSC5022

5

0.3

15

50

1.5

0.3

1

0.5

3

0.3

60

TQ-3P

MBIT

5

KSC5021

5

0.6

15

50

3

0.6

1

0.5

3

0.3

50

T0;220

MBIT

MBIT

7

KSC5023

5

0.6

15

50

3

0.6

1

0.5

3

0.3

80

TQ-3P

MBIT

10

KSC5024

5

0.8

15

50

4

0.8

1

0.5

3

0.3

90

TQ·3P

MBIT

15

KSC5025

5

1.2

15

50

6

1.2

1

0.5

3

0.3 100

TO·3P

MBIT

800 1.5 * KSC5026

5

0.1

10

40

'2

p.5

3

0.3

40

TQ-220

MBIT

KSC5027

5

0.2

10

40

1.5

0.3

2

0.5

3

0.3

50

TQ-220

MBIT

* KSC5028

5

0.2

10

40

1.5

0.3

2

. 0.5

3

0.3

80

TQ-3P

MBIT

4.5 * KSC5029

5

0.3

10

40

2

0.4

2

0.5

3

0.3

90

TQ·3P

MBIT

3

0.75 0.15

6

* KSC5030

5

0.4

10

40

3

0.6

2

0.5

3

0.3 100

TQ-3P

MBIT

8

*KSC5031

5

0.6

10

40

4

0.8

2

0.5

3

0.3 140

TQ-3P

MBIT

*: Under Development.

c8

SAMSUNG SEMICONDUCTOR

43 .'

TRANSISTORs

FUNCTION GUIDE
, . t ,.3, 4 i i.e;: ;& . _

2-4. Horizental Defelection, ~tJ)yt Transistors
2.4.1 TO-3P Type Transistors'

..
VCEO VeEo Ie

Device

hFE
~

(V)

(V)

(A)

(NPN)

.. ..-

-

~,

~

.

Switching Time

VeE{SAT)(V)

ton

-

VeE Ie
Ie
(V) (A) MIN MAX fA)

t.tg.

Pe

t,

MAX MAX MAX
18
(Ar TYP MAX (jlS) (jlS) (jlS)

Comment

(W)

1500 800 2.5 KSD5000

5

0.5

8

2' 0.6

8

0.4

80

Built in
Damper Diode

3.5 KSD5001

5

0.5

8

2.5 0.8

8

0.4

80

Built in
Damper Diode

5

KSD5002

5

1

8

4

0.8

5

0.4

120

Built in
Damper Diode

6

KSD5003

5

1

8

5

1

5

0.4

120

Built in
Damper Diode

2.5 KSD5004

5

0.5

8

2

0.6

8

0.4

80

3.5 KSD5005

2.5 0.8

5

0.5

8

8

0.4

80

5

KSD5006

5

1

8

4

0.8

5

0.4

120

6

KSD5007

5

1

8

5

1

5

0.4

120

_2.4.2 TO-3P(F) Type Transistors
VeEO VeEo Ie

(V)

(V)

(A)

Device

(NPN)

hFE
VeE
(V)

to~

t.tg

Pe
Comment

tf

MAX MAX MAX
TYP MAX (jlS) (jlS) (jlS) (W)

Ie
Ie
(A) M.IN MAX (A)

18
(A)

0.6

8.

0.4

50

Built in
Damper Diode

2.5 0.8

8

0.4

50

Built in
Damper Diode

1500 800 2.5 KSD5010

5

0.5

8

3.5 KSD5011

5

0.5

8

·cR

Swltehlng Time

VeE{SAn(V)

2

5

KSD5012

5

1

8

4

0.8

5

0.4

60

Built in
Damper Diode

6

KSD5013

5

1

8

5

1

5

0.4

60

Built in
Damper Diode

2.5 KSD5014

5

0.5

8

2

3.5 KSD5015

5

0.5

8

0.6

8

0.4

50

2.5 0.8

8

0.4

50

5

KSD5016

5

1

8

4

0.8

5

0.4

60

6

KSD5017

5

1

8

5

1

5

0.4

60

SAMSUNG SEMICONDUCTOR

44

TRANSISTORs

, r' .....

,.,

FUNCTION GUIDE

3. QUICK REFERENCE TABLE (APPLICAnON)
3.1 Audio Equipment

~e

Application

SOT-23

FM

RM AMP
Mix, Conv
LocalOsc
IF

AM

RF.
KSC1623
Conv Osc KSC2715

Dill Amp

KSC2223
KSC2223
KSC2223
KSC2715

IF

KSC2715

lOW
20W
25W
30W
35W
40W
50W
60W
80W
100W
l50W

KSA8l2,KSC1623
KSA8l2,KSC1623
KSA8l2,KSC1623
KSA8l2,KSC1623
KSA8l2,KSC1623

TO-92

TO-220

KSA733,KSC945
KSA733,KSC945
KSA733,KSC945
KSA733;KSC945 '
KSA733,KSC945
KSA992,KSC1845
KSA992,KSC1845
KSA99l,KSC1845
. KSA992,KSC1845
KSA992,KSC1845
KSA992,KSC1845

Driver

KSA642,KSD227
KSA642,KSD227
KSA954,KSC2003
KSA954,KSC200,3
KSA954,KSC2003
KSA954,KSC2003

KSA9lO,KSC2310
KSA9l0,KSC23l0
KSA9lO,KSC2310
KSA9l O,KSC231 a
KSA9lO,KSC2310
KSA9lO,KSC2310
KSA9l0,KSC23l0

3W
5W
lOW
20W
25W
30W
35W

=8

TQ-126

KSC945,KSC8l5
KSC1675,KSC945
KSC838
KSC1675,KSC945
KSC838 .

KSA954,KSC2003
KSA954,KSC2003

Output

"

KSC1674
KSC1674
KSC1674,KSC1675
KSC838,KSC1675

Pre Driver 20W
25W
30W
35W
40W
50W
60W
80W
100W
l50W
20W
3W
5W
lOW.
20W
. 25W
30W
40W
50W
60W
80W

TQ-92L

SAMSUNG SEMICONDUCTOR

KSA9l6,KSC23l6
KSA9l6,KSC23l6

KSAl142,KSC2682
KSAl142,KSC2682
KSAl142,KSC2682

KSA l220,KSC2690
KSA l220,KSC2690
KSA l220A,KSC2690A

KSA928A,KSC2328A
KSB772,KSD882
KSB744,KSD794
KSB834,KSD880
KSA6l4,KSD288
KSB596,KSD526
TIP4l C,TIP42C
TIP41C,TlP42C

45

.TRANSISTORs

FU~C"rIQN

GUIDE

3.2 Video Equipment
Application

VHF

UHF

Video
Chroma
Output

Vertical
OSC
Deflection
Driver

Output

Output

Sound

" Color TV

Package

Tuner

RF· SOT-23 KSC2755."
TO-92
SOT-23 KSC2756
MIX
TO-92 KSC1393,MPSH24/
SOT-23 KSC2757,KSC2759,MMBR5179
UHF
TO-92 KSC1730,MPS5179,MPSH10
DISK
KSC1070
RF
SOT-23 ~SC2758
DISK
SOT-23
SOT-23
UHF
TO-92
TO-92
MIX

KSC1070
KSC2758
KSC2757,KSC2759,MMBR5179
KSC"1730,MPS5179,MPSH10
KSA643,KSA733

AGC

Output

TO-126 KSC2688
TO-220 KSC1257
TO-92
TO-92

Switching

Error
Amp

TO'92

KSC945,KSA733

KSC2328A,KSA928A
KSD261,KSB564,KSB1116,KSA643,KSD471,KSD1616
· KSC945,KSA733
· KSC945,KSA733

KSC945,KSA733
TO'92 KSC945,KSA733
TO-92
TO-92L KSC2330,KSC2316;KSA916
TO-3P KSD5QOO,KSD5001 ,KSD5002,KSD5003 KSD5004, KSD5005,KSD5006,KSD5007

Driver
Output

TO-92L KSC2310,KSA910
T0-220 KSD560

Driver.

KSC1507
KSC945,KSA733
KSA642,KSA643,KSD227,KSD261

TO-126 KSA 1220A,KSC2690A
TO-220 KSB546,KSD401,KSA940,KSC2073

TO-92
TO-92L KSC231 O,KSA91 0
T0-92

Regurator Output

KSC2330,KSC2340
KSC1520A

TO"92L KSC2310,KSA910
TO·220 KSB546,KSD401,KSA940,KSC2073 KSD880,KSD288,KSA614,KSB834
TO-126 KSA1220A,KSC2690A
KSA 1220A,KSC2690A,KSB772,KSD882
TO-202
KSC1096,KSA634
TO-92L
KSC2328,KSA928A

TO-220
Series
Regurator

KSC1394,MPSH24
KSC2757,KSC2759,MMBR5179
· KSC1730,MPS5179,MPSH10
KSC1070
KSG2758
KSC1070
KSC2758
KSC2757 ,KSC2759 ,MMBR5179
KSC1730,MPS5179,MPSH10
KSA733,KSC945

T0-92L KSC2330,KSC2340
TO-202 KSC1520A

TO-202
TO-92L KSC2383,KSA1013
TO-92
TO-92 KSC945,KSA733

Sync
Separator
Horizontal OSC
Deflection Driver

BIW TV
KSC2755
KSC1393
KSC2756

KSD362,KSQ73
KSA733,KSC945
KSA733,KSC945
KSD288,KSD880,KSB834,KSA614

TO-126
KSB772,KSD882
TO-202
KSC1096,KSA634
TO-92 KSD471 A,KSB564A,KSD261,KSA643 KSD4 71 A,KSB564A,KSD261 ,KSA643
KSD5007
TO-3P KSD5007
".

c8

SAMSUNG SEMICONDUCTOR

46

FUNCTION GUIDE

TRANSISTORs
80T·23 TYPE

~

20mA

30m"

SOmA

12V

MMBR5179

14V

KSC2734
KSC2759

15V

KSC3120
KSC2757

O.1A

O.2A

O.3A

20V

KSC2223 KSC2756

25V

KSC2758

KSC3125
MMBTH10.
MMBT5089
MMBC1009F1-5

MMBTA4124
MMBTA4126

30V

KSC2755

KSC2715
MMBT5088

MMBTA4123 MMBTA13
MMBTA4125 MMBTA14

O.SA

O.SA

O.BA

BCW29-33

MMBTH24

(2mA)
KSK123

32V

BCW60A-D
BCW61A-D

35V

MMBC1622D6-8

40V

MMBA812M3-7 MMBT3903
MMBC1623L3-7 MMBT3904
MMBTA20
MMBT3906
MMBTA70
KSR1109-12
KSR2109-12

45V

MMBA811C5-8

BCW69-72
BCW70G-K
BCW71G-K

MMBT6429

50V

MMBT5086
MMBT5087

KSA812
KSC1623
KSR1101-8
KSR2101-8
KSR1113/4
KSR21'13/4

MMBT6428

60V

MMBT2484

80V

KSA1298
KSC3265
KSA1182
KSC2859
MMBTA63
MMBTA64

MMBT2222

MMBT6427

MMBT2222A
MMBT2907
MMBT4401
MMBT4403

MMBTA05
MMBTA55

MMBT2907A

MMBTA06
MMB'[A56

140V

MMBT5550

150V

MMBT5401

200V

MMBTA43
MMBTA93

300V

MMBTA42
MMBTA92

c8 SAMSUNGSEMICOND"'~OR

'10mA

FU"CTION GUIDE

TRANSISTORs
TO-92S, TO-92 & TO-92L TYPE (VCEO: 12V",aOV)

F', VCEC
Ie "

12V

15V

20V

25V

30V

KSC1395 KSK161 (1 OmA) KSC1070 KSC1393
KSK211 (1 OmA)
KSC1394
KSC1674
KSC2786
SS9016
25mA
KSC1187
30mA
SS9011
KSC1188
KSC838
KSC2669
50mA MPS5179 KSC1730
KSA542
2N5088
SS9018
KSC1675
KSC184
KSC2787
KSC388
KSC900
'2N5089
O.1A
MPSH17
MPS5172 KSC839
MPS6520 KSC921
MPS6521 MPSH20
MPS6522 MPSH24
MPS6523
MPSH10
MPSH11

35V

40V

45V

0.2A

2N4124
2N4126

O.3A

KSC3488
KSA1378
KSA64:2 '
KSD227
MPSA12 MPS6560 MPSA13
MPSA62 MPS6562 MPSA14
KSA643
MPSA63
KSD261
MPSA64
SS9012
SS9013
KSA1150
KSC2710
MPS3706 MPS3702 MPS2222
MPS3703
MPS3704
MPS3705

0.5A

O.6A

O.7A

c8

KSB81 0
KSB811

SAMSUNG SEMICONDUCTOR

2N4123
2N4125

60V

KSK117
(10mA)
KSK30
(10mA)

20mA KSK65
(2mA)

O.15A

50V

KSA640
KSC122~

KSC1330 SS9014
MPS6513 SS9015
MPS6517
MPSA10
MPSA20
MPSA70
KSRtOO9-12
KSR2009-12
KSR1209-12
KSR2209-12
MPS4250

2N3903
2N3904
2N3905
2N3906
MPS8097

KSA539
KSC815

2N5086
2N5087
2N5209
2N5210

KSR1201-8
KSR1213/4
KSR2201-8
KSR2213/4'
KSR1001-8
KSR2001-8
KSR1013/4
KSR2013/4

KSA1175
KSC2785
KSA733
'KSC945
2N6428
2N6428A

MPS4250A
MPS4249

KSA545
KSC853

KSA953
KSC2002

2N6427
MPSA25
MPSA75

MPSA26
MPSA76

MPS8098
MPS8598
MPSA05
MPSA55
MPSA27
MPSA77

MPS2907A

2N4400
2N4401
2N4402
2N4403
MPS2222A
MPS2907
KSA707
KSC1072

KSA708
KSC1008
KSA931
KSC2331

48

TRANSISTORs

FUNCTION GUIDE

TO-92S, TO-92 & TO-92L TYPE (Continued)

I~
0.8A
Ie

12V

15V

20V

1A

25V

KSB564A
KSB811
MPS6601
MPS6651
SS8050
SS8550

1.5A
2A

35V

30V

KSD1021
KSD471A

(10V)
KSC2500

40V

45V

MPS6602

50V

KSB1116
KSD16i6

60V

KSB116A
KSD1616A

KSA928A
KSC2328A

I

TO-92S, TO-92 & TO-92L Type (VCEO: 80V"'400V)

~
Ie

BOV

100V

120V

140V

150V

160V

200V

250V

300V

350V

400V

20mA

25mA
30m A
SOmA

KSA992
KSC1845
KSA1174
KSC2874

KSA91 0
KSC2310

O.1mA

KSC1506 KSC2340
KSC2330

O.15A

MPSL01

O.2A

O.3A
O.5A

O.6A

cas."

KSA954
KSC2003
MPS8099
MPS8599
MPSA06
MPSA56

MPSA45
MPSA43 2N6515 2N6519
MPSA93 2N6518 MPSA92
2N6516
MPSA42

MPSL51 2N5400

2N5550

2N5401

SAMSUNG SEMICONDUCTOR

MPSA44

2N6517 .
2N6520

2N5551

49

TRANSISTORs

FUNCTION GUIDE

TO-928, TO-92 & TO-92L Type

I~
I~

BOV

100V

(continu~d)

120V

O:tA

150V

140V

lBOV

200V

' 250V

300V

350V

400V

KSC1009 KSA709
"

O.SA

KSA916
KSC2316

lA

KSA1013
KSC2383

1.5A

.,

2A

T0-126 & TO-202 TYPE (VCEO: 25V"'400V)

~
Ie

25V

30V

40V

45V

BOV

BOV

100V

120V

160V

O.lA

lBOV

2~OV

300V

400V'

KSC2682
KSAl142
I

KSC1520 ~SC2888
KSC1520A

O.2A

O.5A

MJE340
MJE350

1.2A

KSC2752

KSC2690 KSC2690A
KSA1220 KSA1220A

1.5A

I\S0985 KS0981'
KSB794 KSB795

2A

KSC1096
KSA634

KSC1098
KSA636

3A

KS0882 MJE170 KS0794 I\S0794A MJE172 KS01692
KSB772 MJE180 KSB744 KSB744A MJE182 KSBl149
MEJ171
MJE181
S0169a'

\

~SB1150

4A

MJE700
1v1JE701
~JEBOO
MJEBOl

5A MJE200
MJE210

c8

MJE702
MJE703
MJE802
MJE803

.

~S01691

/V
Low Noise Level NL=40r:nV (Max)

10-92

•

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symb~1

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Veeo
VeEo
VEeo
Ie
Pc °
Tj
Tstg

Rating

Unit

-50
-45
-5
-50
250
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off CurreOnt
Emitter Cut"off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Gain-Bandwidth Product
Output Capacitance
Noise Level

hFE

Test Conditions
Ie = -100J1

-18-20

0.1

-0.2

-o.e

-0.4

-D.8

-1.0

V.. (V).IIASE-EMITTER VOLTAGE

Vee M, COLLEC1'OR-EMITTER VOLTAGE

DC CURRENT GAIN

CURRENT GAIN-BANDWlOTH PRODUCT
1000
Vr;e..-$1

l,..--l--'

/'

lO:L.....L.J...LLlillL........l...w.LUlIL-...L.J...LLlillL........l.....LI..LLlll
-0.01 -0.03-0.1)5..0.1 -O.3-o.s -1
\3-5-10
-30-50-100
-Ie (mA).

10

~

BASE-EMmER SATURATION VOLTAGE
COLLECTOR.EMITTERSATURATION VOLTAGE

30

10
Ie (ntA), COLLECI"OR

COLLECTOR CURRENT

~URRENT

COLLECTOR OUTPUT CAPACITANCE

-10

, .

I.

-5

i-

tc-101B

-3

10

~
~

-1

Vae(sa1}

I-~
.-o.s
E

f!

I
If

I

co sa1

t-o.os

-_.

T
-Q.3-0.5 -1

-3 -5 -10

3

Ie (mA). COLLECIOR CURRENT

SAMSUNG SEMICONDUCTOR

............

f---'-f---

1L-~

-30-50-100 -300-1000

~-

r-- ' ........

2

i-o.03

--;-- - -

.......

5

8

~

c8

..-

--

oS

,. -0.1-

-0.01
-0.1

..

_

r!
z

-1

__LL~~L-~__LL~~L-~~
-3

-5

Vea

M. COLLECTOR-IIASE VOLTAGE

-10

-30 -50

-100

-300

62

KSA640

PNP EPITAXIAL SILICON TRANSISTOR
NOISE FIGURE

NOISE FIGURE

100

100

Vee- -fill

VeE- -fill

t-10011z

I-10Hz

50

50

30

30

~

~

~~'\~~

~'\
5

"\.

~'\.~~

'"

~~

........

........

~

1

,....
0.1
-0.01

-D.03-O.DS -0.1

,....

"
-0.3-0.6

-1

0. 1
-0.01

-3 -5 -10

Ie (mA). COLLECTOR CURRENT

~

,I'

3 ........

1'\

-'J..

I""-..

1'"

-0.03-G.05 -0.1

-o.a-0.5

-1

-3 -5

-10

Ie (mA). COLLECTOR CIJIIRENT

NOISERGURE
100

I

VeE_ -0'

f_1Hz
50
30

I"\,

~

r-....

~

f"',

......... t--

"O.1
-0.01

~~~

~

V

.......

-0.03-0.05 -0.1

-0.3-0.5

-1

-3 -5

-10

Ie (mA). COLLECTOR CURRENT

:~.

c8'SAMSUNG'SEMICONDUCTOR

.

63

KSA642

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER
TO-92

• Complement to KSD227
• Coilector Dissipation p c =400mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Charact~ristic

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vceo
VeEO
VEeo
Ic(DC)
Ic(pulser
Pc
Tj
Tstg

-30
-25
-5
-300
-500
400
150
-55-150

V
V
V
mA
mA
mW
°C
°C
1 Emitter 2

, PW:s 10ms, duty cycle :s 50%

Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
. Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage

BVceo
BVcEo
BVEBO
Iceo
IEeo
hFE
VeE(sat).

Test Conditions

Ic =-100pA,IE=0
Ic=-10mA, le=O
IE=-10pA,lc =0
Vce = -25V, IE =0
VEe = -3V, Ie =0
VeE= -lV;le= -50mA'
Ic'= -300mA,le = -30mA'

Min

Typ

Max

-30
-25
-5

70
-0.35

-100
-100
400
-0.6

Unit

V
V
V
nA
nA
V

, Pulse Test; PW:s 350/Ls, duty cycle:s 2%

hFE

CLASSIFICATION

Classification

0

y

G

hFE

70-140

120-240

~00-400

c8

SAMSUNG SEMICONDUCTOR

64

KSA642

PNP EPITAXIAL SILICON TRANSISTOR
BASE-EUiTTER ON VOLTAGE

STATIC CHARACTERISTIC

-woo

-200
-180

.1

r'
§-'

i(...

40

r

-300

~ 1B-~1'2mf

V".. ~ I-S V
. . . . r--1

-500

/"--1~
1a __ 1.4mA.

80

00

1B--D.8mA

lo-il-

'/

V

80

J

iI

la_-o.amA

~

80

two

1

18--1.0

20

f-- r-Vce--1V

40

le __ o.2mA

".
0

1=:
l

.II

-10

-5

-3

I

-1

o

-1

-2

-3

-4

-5

-8

-7

-8

-9

o

-10

-0.2

-0.4

-.G.6

-0.8

-1.0-1.2

Vee (y), _-EIIITTER WlLTAOE

VCII (y), CDl.LECJIm.I!IImER WlLTAOE

BASE-EMITTER SATURAnON VOLTAGE
COLLE¢TOR-EIiITTER SATURAnON VOLTAGE

DC CURRENT GAIN

I

-10

5 - Ic_101a
3
300

f-+-I-H-+H-It--++++ ttti-r---t- --t-t-ttttti

i

1
VIE (SOl)

~:mii_
ro~~~uu~~~~~~~~~

-1

-3 -5

~30

-10

-50 -100

-300-500-1000

/

1
Vee (SOl)

-001
-1

-3 -5

-10

-30 -50 -100

"3OO-500-WOO

oC (mAl, cot.LECIOR CUllllENT

Ie (mA), CDl.LECIOR CUIHIENT

COLLECTOR OUTPUT CAPACITANCE

I1.1
. I.
I

I

I : Illi

:;~~HZ
10

........
-- f---

.~

-

-I

._-

I
-1

-3 -5

iI
-10

-30 -50

-100

-300

Veo (y), CDl.LECIOII-BASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

65

KSA~43

IlNP EPITAXIAL SILICON TRANSISTOR,

LOW FREQUENCY POWER AMPLIFIER
• Compleinent to KSD261
~ Collector Dissipation Pc=500mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
i

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)*
Collector Dissipaiton
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VeBO
Veeo
Veao
Ie (DC)
Ie (pulse)"
Pc
Tj
Tstg

-40
' -20
-5
-500
-700
500
150
-55-150

V
V
V
mA
mA
mW
°C
°C

* PWs10mS, duty Cycle s 50%.

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
, Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

Test Conditions
Ie = -100pA, Ie =0
Ie = -10mA, I~ =,0
, le=-100pA,le=0
Vea=-25V,le=0
VEs='-3V,le=0
VeE=-1V,le=-100mA*
Ie = -500mA,la = -50mA'1
Ie = ,500mA,I. = -50mA"

BVeao
BVeEo
BVeBO
leao
leso
hFE
VeE (sat)
Vae (sat)

Min

lYP

Max

-40

-20
-5

40
-0.3
-1.0

-200
.-200
400
-0.4
-1.3

Unit
V
V
V
nA
nA
V
V

* Pulse Test: PW = 350l's, duty cycle = 2%

hFE CLASSIFICATION
Classificatio"n

R

0

Y

G

hFE

40-80

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUCTOR'

66

KSA643

PNP EPITAXIAL SILICON TRANSISTOR
BASE-EMITTER ON VOLTAGE

STATIC CHARACTERISTIC
-500

_1000 _ _ _
- -500 l--~ilce __ 1V

V IB--l.emA

-300

V V ." IB __
f/ ~ IBJ-1.2j
1~mA

la--1.QmA

'V V t-

I

la __ Q8mA

f.- I--

-100

1/ ~
V

I I

'B~-imA

t-

IB-I-~

_

~t +A

-so

-

0

o

-2

-4

-8

-8

-10

-12

-14 -18 -18

-20

-0.2

-0.4

-0.8

-1.0

-1.2

BASE-EMmER SATURATION VOLTAGE
COLLECIOR-EMmER SATURATION VOLTAGE

OC CURRENT GAIN
-10

1000

5=

I

500

-as

V. (VI, -.muTTER 1ft)LTAGE

Vee (VI, COUECTOR-DITTER 1ft)LTAGE

.

le_10ta.

I
I

1

30

j'...,

---

-

~jjj
I

I

10
-1

VIE("')

-

,

--

.... V

1

Vee("')

I

'i
i

lit

-3 -5

-10

-1lO1

-30 -50 -100

-300_500_1000

-1

-3 -5

-10

-30,-SO -100

-300-500 -1000

le(mA), COLLEC:IOR CUIUIENT

Ie (mA~ COLLEC:IOR CUIWENT

1:OLLECIOR OUTPUT CAPACITANCE
100
f.1MHz
IE_D

so
30

r-...

t--f-

1""'- i"'-r-.

l"-

0

S
3

1
-G.5

-1

-3

-5

-10

-30

Vca(VI, ~\IOLTMIE

c8

SAMSUNG SEMICONDUCTOR

67

PNP EPtT~IAL SILICON TRANSISroR

KSA707·

LOW FREQUENCY POWER AMPLIFIER
• Complement to KSC1072
• Collector-Base Voltage Vcao=-6OV
• Collector Dissipation Pc = BOOmW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
. Characteristic

Symbol

Rating

Unit

-60
-45
-5
-700
800
150
-55-150

V
V
V
mA
mW
°C
°C

1

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (T-a =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC CUrrent Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance

BVcBO
BVcEo
BVE80
ICBO
lEBO
hFE
VCE(sat)
VBE (sat)
Cob

Test Conditions
Ic=-100pA,IE=0
Ic =-10mA, IB=O
IE=-l00pA,lc =O
VcB =-40V,IE=0
VEB=-~, Ic=O
VcE =-'l!J,lc=-50mA'
Ic = -500mA,IB= -50mA'
Ic = -500mA, 18 - 5OmA'
Vea= -10V, IE=O
f=lMHz

Min

Typ

Max

-60

:"45
-5

40
-0.7

-0.3
-0.9
13

-0.1
-0.1
240
-0.7
-1.1

Unit
V
V
V
pA
pA
V
V
pF

, Pulse Test: PW s 350,.s, duty cycle s 2%

hFE CLASSIFICATION
Classification

R

0

y

hFE

40-80

70-140

120-240

c8

SAMSUNG SEMICONDUCTOR'

68

KSA707

PNP EPITAXIAL SILICON TRANSISTOR
BASE·EMITTER ON VOLTAGE

STATIC CHARACTERISTIC
-500

-1000

-450

r: r: V

1,0V

V

f"'"

f200 V

.11-150

-500

,. V,,-'-....1.
V

......

i

-·'··-F

0
-10 -1S -20 -25 -30

i

'·+i~

-50
-S

L

1•• -1.0mA

-100

o

-VCI!.-

I
I I I-- ".-Q.8mA

_

~_

f... I ._ l - _ ! - - 'T0.8j

~
I-'

-

-300

1•• ~'.4mA
I
I
__ ".-1.2mA

-10
-5
-3

-1

-0.2

-35 -40 -45 -50

cQ.4

-0.8

-o.a

-1.0

-1.2

".. (VI,IIAIIE_TTIR VOLTAGE

VOl (VI, COI.LECRJA.EMITTER IIOLTAGE

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

DC CURRENT GAIN

I

-10

I-- 1c_101B

_.

1

VBE(III)

/

1
Vo.(eaI)

5

1111
-1

-3 -S

-10

-30 -50 -100

-300-500-1000

Ie (mA), COI.LECTOR CURRENT

-1

-3 -5

-10

-30 -50 -100

-300

-1000

Ie (mA), COLLECTOR CURRENT

COLLECTOR OUTPUT CAPACITANCE
100

:l~z

I

50
30

--

~

~E-o

~~

............

--,-

.- ,,-

-

-1

-3

-S

-10

-30 -50

-100

-(VI, COUECTOA,BASE IIOLTAQE

c8

SAMSUNG SEMICONDUCTOR

69

KSA708'
..
'""

PNP EPITAXIAL SILICON TRANSISTOR

'-

LOW FREQUENCY AMPLIFIER,
MEDIUM SPEED SWITCHING
• Complement to KSC1008
,
• COlleCtor-Base Voltage Vcso =-80V
• Collector Dissipation Pc =800mW

10-92

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Collector;13ase Voltage
, Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
, 'VCEO
VEeo
Ic
Pc
Tj
Tstg

Rating

Unit

-80
-60

V
V
V
mA
mW
°C
°C

-8
-700
800
150
-55-150

1. Emitter 2 Base 3. Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
, Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current-Gain-Bandwidth Product.
Output Capacitance

BVCBO
BVcEo
BVEeo
ICBO
lEBO
hFE
VCE(sat)
VeE (sat)

fr
Cob

Test Conditions
Ic =-l00pA,IE=O
Ic =-10mA,l e =0
IE=-100pA,lc =0
Vce =-60V,IE=0
VEe =-5V,lc=0
VCE=-'ZII,lc=-50mA*,
Ic = -500mA,le - 50mA·
Ic =-500mA,lc=-50mA
VCE= -10V,lc=-50mA
Vce= -10V,IE=O'
f=lMHz

Min

Max

Typ

-80
-60
-8

40
-0.3
-0.9
50
13

r

-0.1
-0.1
240
-0.7
1.1

Unit
V
V
V
pA
pA
V
V
MHz
pF

* Pulse Test: PW:s 350l's, duty cycle:s 2%

hFE CLASSIFICATION ,
Classification

R

0'

y

hFE

40-80

70-140

120-240

c8

SAMSUNG

SEMICON~UCTPR

70

KSA708

PNP EPITAXIAL SILICON TRANSISTOR
BASE·E.MITTER ON VOLTAGE

STATIC CHARACTERISTIC
-500

!

-450

I

/

i;,.L'.8J

".

V . . . Vpo

V , /V

.........

V , / ....... ....... ......
/'

,;'

~

-100

~
~
~

/"

-50

°

-5

1000

Is __ 1.4pA

300

I
1,

I

18--1.2

- - 1.=-I.opA

---...-ro-

. I

-

1.--0.8pA f - -

I

1.--O.4r-

~

-10 -15

-f--

_"I
.
1.--O.8pA-f--

-20 -25 -30

1••

J.2pA
V.. M. _EMITTER VOLTAQE

DC CURRENT GAIN

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
-10

'~---r-=:Fm

V9E·... -~

+- ,

-i

i

...~

iii
~

-1 '---'---'--'-__'---'--'---'---'__-'--'--1..--'
o -0.2
-0.4
-0.6
-0.8
-1.0
-1.2

-35 -40 -45 -SO

VeE M. COLLECIO..-rrrER VOLTAGE

: t: Hi

500

-.- f - -

vl~=-11pA

V

I

-5

~

-3

~
~

-1

g

r---

Ic",101B

.VBE(sal)

II:

~ -0.5

t'-

100

Ii

i

-0.3

I

-0.1

~

j

SO f---.-

;:!

:-t+

III

./

~

f°.os
*

30

VCE(sat)

> -0.03
__~~~~
-30 -50 -100
-300-500 -1000

10~~~~~~~~-w~

-1

-3 -5

-10

-0.01
-1

-3 -5

-10

-30-SO -100

-300-S00 -1000

Ie (mA). COLLECIOA CURRENT

Ie (mA). COLLECIOR CURRENT

COLLECTOR OUTPUT CAPACITANCE

~

8

5~-~-+~~~~-~-~-++++H

-1

-3

-5

-10

-30 -SO

-160

Vea M. COLLECIOR-IIASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

71

.KSA709

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE AMPLiFIER
• Collector-Base Voltage Vcao =-160V
• Collector Dissipation Pc =800mW
. • Complement to KSC1009

T0-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
Vceo
VeBO
Ic
Pc
Tj
Tstg

-'160
-150

V
V
V
. mA
mW
DC

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

-8
-700
800
150
-55-150

DC
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown .Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off 'Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVcso
BVceo
BVE~o

ICBO
leBO
hFe
Vce(sat)
Vse (sat)

h
Cob

Test C.ondltions
Ic=-100pA,le=0
'lc=-10mA, Is=O
le=-100pA,lc=0
Vcs =-l00V,le=O
Ves=-5V,lc=0
Vce=-'ZIi,lc =-50mA*
I, ,- -200mA,ls=-20mA*
Ic~-200mA,ls - 20mA'
Vce= -10V, Ic=-50mA
Vcs= -10V, le=O
f=lMHz

Min

lYP

Max

-160
-150

-8
40
-0.3
-0.9
50

-0.1
-0.1
240
-0.4
-1.0
10

Unit
V
V
V
pA
pA.
V
V
MHz
pF

* pulse measured PW,s; 350l's, duty cycle,s; 2%

. hFE

CLASSIFICATION

Classification

0

y

G

hFE

70-140

120-240

200-400

c8

SAMSUNG SEMiCoNDUCTOR

72

KSA709

PNP EPITAXIAL SILICON TRANSISTOR
BASE-EMITTER ON VOLTAGE

STATIC CHARACTERISTIC
100

1//) IB.OBmA.l.

90

I~

.1

VCE __ 1

la.o.emA,

r/,

80

-1000

-500
-300

1/

1/1

la_OAmA.

B

Vi.

-SO

fIJ

rJ

20

I

1-100

IB-D.2mA

V

~

-30

1

-10

.!!

-5
-3

10

o

-1

o

10

-0.,

0

-0.4

-0.&

-1.0

-0.&.

-1.'

VIE(¥). -.-TTERWLT_

BASE-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN

-10

1000

f--- Ie.

t-- VCE--5V
500

1

1

I

300

I
g

100

1

SO
30

-0D5

-0.03
-1l.O1
-1

10
-3 -5

-10

-30 -50 -100

-300-600 -1000

-3 -5

-1

-10

-30 -SO -100

-300-500 -1000

Ie (mAl. COUECIOR CIIRIiENT

Ie (mA). COUECIOR CURRENT

COLLECTO.R-EMITTER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE

-10

Sf--- le_1

.1

24

1-

'.1MHz
le_O

3
20

I -~

1

.,

I'.

:'

-0.3

~

L.
'8

1

I\.:

>
-ODS
-0.03

4

-0.01
-1

c8

-100

-3 -5 -10
-30 -SO
-300-500 -1000
Ie (mAl. COI.LEC'IOR CUIIIIENT

.SAMSUNG

SEMICOND~croR

o
-1

-3

-5
-10
-30 -SO -100
Yeo M. cou.EC:RJIWIASE VNLTAGE

73

KSA733·

PNPEPirAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER
TO-92

• Complement to KSC945
• Collector-Base Voltage VCBO = -6OY

ABSOLUTE' MAXIMUM RATINGS (Ta =25°C)
Symbol·

Characteristic

Rating

Unit

-60
-50
-5
-150
250
150
-55-150

V
V
V
mA
mW
°C
°C

~

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
Vceo
VeBo
Ie
Pe
Tj
Tstg

1. Emitter 2. Base 3. Collector

=

ELECfRICAL CHARACfERISTICS (Ta 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collecfor-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage

BVeBo
BVeeo
BVeBo
leBO
leBO
hFe
Vee(sat)
Vee (on)

Base-Emitter On Voltage
Current-Gain-Bandwidth Product
Output Capacitance

h

Noise Figure

Nf

Cob

Test Conditions
le=-100pA, ie=O
le=-10mA, IB=O
Ie = -10pA, Ie =0
VcB=-SOV,le=O
VeB =-5V,le=0
Vce=-SV,le=-1m.A
Ic=-100mA,le=-10mA
Vee =-6V,lc =-1mA
Vce =-6V,lc =-10mA
VeB=-10V,le=0
f=1MHz
Vce =-6V,lc=-0.3mA
f=100Hz, Rs=10KO

Min

Typ

Max·

-60
-50
-5

40
-0.18
-0.50
50

-0.1
-0.1
700
-0.3

-0.62
180
2.8

-0.80

6.0

20

Unit
V
V
V
pA
pA
V
V
MHz
pF
dB

hFE CLASSIFICATION
Classification

R

0

V

G

L

hFe

40-80

70-140

120-240

200-400

350-700

c8

SAMSUNG SEMICONDU~R\

74

KSA7J3

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE-EMITTER ON VOLTAGE

-50

-100

-45

-50

f:=
-30

-40

1-

~

1=

f=t=-f=c
v.t.-:jv.::..

--

.-

I35

~-

3 0 - - IBs-250,.A

I!
fil-25

i

!

8 -20
l-15

I

I

~~~I~Ei;E!~~1

II

IB--150,.A

.__ IB--100,.A

I

.s
-10

I

IB=-200,.A ...

::I

1-8 1=
'0

i

-6

~

-3

i

,

I--

.. t--

o

-0.2

-1

S
-0.5

.- --IB--50,.A

-o.s

-t t--

-5

I

j=::- c·

-0.1

o

-2

-4

-6

-8

-10 -12 -14

-16 -18 -20

-0.4

VeE (y), COu.ECJOR.EMITTER IIOLTACIE

-0.6

-0.8

-1.0

-1.2

V.. (y),IIASE-Ii!MITTER lIOLTAGE

OC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT

I

1000

IVCE--SV

g5!JO

a

~300
~
~z

V i-'"

/

! ;00
~

i

50

i!

30

II:

'it
:c
I!
~

1~-L~~~

-0.1

-0.3 -0.5

__~~~~~~~~

-1

-3 -5

-10

-30 -50

10
-0.5

-100

-3

-1

Ie (mAl, COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
-1 0

5r==

I.Ll

1e_101B

IE""~

10 ~-

-_.

1

~

\leE (sat)

!IIIII

...... 1-'

VeE (sat)

-30

+10

COLLECTOR OUTPUT CAPACITANCE
20

3

1

-5

Ie (mAl, COLLECTOR CURRENT

.

Ii

I

I
j---

I-

-

!

t--

i-

t--

I"
-.

5

I'--. ......

.-

3

1

-0.Q1

-0.1

-0.3-0,5-1

-3 -5

-10,

-30-50 -100

Ie (rnA), COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

-1

-3

-5

-10

-30 -50

-tOO

-300

Yeo (y), COLLECIOR-IIASE IIOLTAGE

75

'KSA812

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER
80T-23

• Complement to KSC1623'
• Collector-Base Voltage Vcao =-60V

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VeEo
VEeo
Ie
Pc
Tj
Tstg

-60
-50
-5
-100
150
150
-55-150

V
V
V
mA
mW
°C
°C
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test CO~,dltion

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance

IcBO
lEBO
hFE
VCE(sat)
VeE(on)
fT
Cob

VcB=-60V, IE=O
VEe=-5V,lc =0
VCE = -6V, Ic= -1 mA
le= -1 OOmA, le= -1 OmA
'c=-1mA, VcE =-6V
'e=-10mA, VcE =-6V
Vce= -1 OV, 'E=O
f=1MHz

Min

90
-0,55

Typ

200
-0,18
-0,62
180
4,5

Max

Unit

-0,1
-0,1
600
-0,3
-:-0,65

fAA
fAA
V
V
MHz

pF

Marking

hFE

CLASSIFICATION

Classification

0

y

G

L

hFE

90-180

135-270

200-400

300-600

hFE grade

c8

SAMSUNG SEMICONDUCTOR

76

KSA812

PNP EPITAXIAL SILICON TRANSISTOR
BASE-EMITTER ON VOLTAGE

STATIC CHARACTERISTIC .
-50

-100

-45
~

I'

"""
'.".00
~

~

~ IB=-400~~
~

~

le=-300IlA

I

IB""-100,IAA

J-+-

-10
- 5

o

10

-5

IB1=-1JOj./A

I

I

I

1-e

1--1,.= -~50.A
I.L200~

~

Vci=-6V

-30

IB=-350j.l~

-----~

=

-50

J

~

-3

i

1

!.
Ji_o.s

-0.3

~

-0.1

o

-2

-4

-6

-8

-10

-12

-14 -18 -18

-20

-1.0

CURRENT GAIN-BANDWIDTH PRODUCT

DC CURRENT GAIN
1000

1000

t=

VeE

V E--6V

-6V

-

300

~

Ii"
II!
II:

....... ~

100

u

::>

50

8

30

-1.2

v.. (y), _.eMITTER VOLTAGE

VCE (y), COLLECTOAoEMITTEA WLTAGE

500

-0.8

-0.&

-0.4

-0.2

·0

./

i

10

1~~~~~~~~~~__~~~~
-0.1
-0.3 -0.&
-1
-3 -5
-10
-30 -50 -100

10

-0.5

-1

-3

I, (mA), COLLECTOR CURRENT

BASE-EMITTER SATURATION 'VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
-10

I

-5

. ~

-10

-30

COLLECTOR OUTPUT CAPACITANCE
20

-

Ic-10

'=1U
lE=O

-3

I

-5

Ie (mA), COLLECTOR CURRENT

10
-1

Lo.s

VeE (sat)

"-......

E -0.3

> -0.1

!,-o.os

,

......

III

,;
VeE {sat)

1'0..

-G.03
-0.G1
-0.1

1
-0.3-0.5-1

-3 -5

-10

-30-50 -100

Ie (mA), COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUcroR

-1

-3

-5

-10

-30 -SO

-100

-300

Veo (y), COLLECI'OfI.IIASE VOLTAGE

77

~ PNP EPITAXIAL SILICON TRANSISTOR

KSA910

DRIVER STAGE AUDIO AMPLIFIER
HIGH VOLTAGE SWITCHING APPLICATIONS

lO-92L

• Complement to KSC2310
• ColI.ctor~Emltter Voltage VCEO ::;:-150V
Cob=5pF (MAX)
• Output Capacitance:

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

Sym,..bol

Rating

Unit

Veao
Veeo
V"ao
Ie .
Pe
Tj
Tstg

-1S0
-1S0
-S

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperatu're
Storage Temperature

-SO
800
1S0
-SS-+1S0

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (fa =25°C)
,
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance

BVcao
BVcEO
BVeao
Icao
hFE
Vce (sat)

fr
Cob

Test Conditions
Ie =-100pA, Ie =0
Ie =: -SmA, Ie =0
Ie = -10pA, Ie =0
Vea = -1S0V, Ie =0
Vce=-SV,lc=-10mA
Ic=~10mA, la=-1mA
Vce =-30V, Ic =-10mA
Vca=10V, le=0,
f=1MHz

Min

.1)'p

Max

-1S0
-1S0
-S
-100
240
-0.8

40
100

S.O

Unit
V
V
V
nA
V
'MHz
pF

hFE CLASSIFICATION
Classification

R

0

Y

/;IFe

40-80

70-140

120-240

c8

SAMSUNG SEMICONDUCTOR.

78

KSA910

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

-80

4-

I I

L

f--

_I.J_~ r--

I

i.--' l -

i

t.,... ~

II'

IB--300,.A

'I'

I

I

r,

I
-4

-20

IT

I

I

I

1.~1_1J"" c-

I

I

-.

I••I_J,.,. c-

I

J

.

I I

Yl

'/

;.---

-10

VCE __ SV

I•• -.oco""

//
I

-80

II
,.~-soh,.A c-

V......... ......
-

BASE·EMITTER ON VOLTAGE

-10

I I
-8

-8

-10

-12

)

o

o

-14

-0.2

Vea M. COLLECIOR EII1'\'TER VOLTAGE

-0.4

-1.4

I

-1000

-500

"".-5V

300

~ ~: !;:;':CPulse .

-300

~100._.

II:

-1.2

SAFE OPERATING AREA

DC CURRENT GAIN

iii
II:

-1.0

VeE M. BASE-.EMITTER VOLTAGE

1000 _ _ _
500 -

-0.8

-0.6

50

30

a
i '° _ _

g

1-100
il0:_50

2-

.·100ms

~

30

~~~
'1?~.

~.
:i

-10

So
.!! -5

-3

-1

-0.1

-0.3 -0.5

-1

-3 -5

-10

-30

-so. -100

-3 -5

-1

i

iiiis

1.'

-5 r -

..

-3

!c~

-1

10-101s

!!i

~ -0.3

0.8

i" ......

...to.8
0

............

0.4

" .............

0.2

o

VeE (sat)

~-o.s

1.0

W

o

20

40

80

80

100

-~
!

......

tt

1'-

120

140 160

T. <-CJ. AMBIENT TEMPERATURE

c8

§
~

1.'

II:

.

~

-300-500-1000

-10

1.8

z

-30 -50 -100

COLLECTOR·EMITTER SATURATION VOLTAGE.
BASE·EMITTER SATURATION VOLTAGE.

POWER DERATING
1.8

S!

-10

VCE M. COLLECIOR EMITTER VOLTAGE

Ie (mA). COLLECTOR CURRENT

SAMSUNG SEMICONDUCTOR

I
1-0

./
VCE(sat)

~ -0.1/
.05

~-0.03

-0,01

-0.1

-0.3 -0.5

-1

-3 -5

-10

-30-50

-100

Ie 1m,,). COLLECIOR CURRENT

79

KSA916'

PNPEPITAXIAL SILICON TRANSISTOR'

·AUDIO POWER AMPLIFIER
• Driver Stage Amplifier
• Complement to KSC2316

TO..g2L

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
Vcro
VeBo
Ic
Pc
Tj
Tstg

-120
-120
-5
-800
900
·150
-55-+150

V,
V
V
mA
mW
°C
°C

Collector-Base Vohage

I Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

1. Emitter 2, Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Einitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
,
DC Current Gain
Collector-Emitter SaturatioQ Voltage
Current-Gain Bandwidth Product
Output Capacitance

.BVcBo
BVcro
BVeBO
. ICBO
hFe1
hFe2
Vce (sat)

fr
Cob

Test Conditions

,

Ic=-lmA,le=O
Ic = -10mA, IB =0
le=-lmA,lc=O
VcB =-120V,le=0
Vce =-5V,l c =-10mA
Vce=-5V,lc=-100mA
Ic=-500mA,IB=-SOmA
Vce =-5V,lc;"-100mA
V cB =-10V, le=O
f=lMHz

Min

lYP

Max

Unit
V

-120
-120
-5

V.-0.1

60
80

240
-1
120
40

V
pA

V
MHz
pF

hFE CLASSIFICATION
Classification

0

y

hFE(2)

80-160

120-240

c8

SAMSUNG SEMICONDUCTOR

80

KSA916

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACI'ERISTIC

DC CURRE14T GAIN

-1000

fv-m

1000

L

,.....

I

/

/ /'

U-800

too 'I.fI~r:V // i /

G

1

........

300

l-"-r- ~--rA

-200

---

......

le __ SmA

-.

IS __ 4mA

I---

la __ 3mA

IB_~2mA

~

.I!

. I Veo--5V

500

1 15rnA~
I
I_le __ 10rnA
IB __

-800

- - ---

/"

IB.-llmA

le_
-2

-6

-4

-8

~

10

-1

-10.

-3 -5

-10

-30"':50 -100

-300 -500 -1000

k: (mAl, COLLECTOR cufiAENT

Veo (VI, COUECIOR-EMITTER VOLTAGE

CDLLEcroR-EMITTER SATURATION VOLTAGE

BASE-EMITTER ON VOLTAGE
-10.

-5

-

Ic=101e

/
VCE(SIII)

5

-0111
-0.4

-0.2

-3000

..

--

-300.

t

-1

-3 -5 -10

-30-50 -100 -300-500-1000

POWER DERATING

I--*$In lepul..

1"-

i
/'0

O~~J)~",

""..
f'-.

Tc

--- ----

"" "........

-50
.
-30
0..5

)
-10.
-1

-~o.s

SAFE OPERATING AREA

~u -100
.I!

-0.1

Ie (mAl, COLLECIOA CURRENT

1000

8.

-1.0

v .. (VI,BAsE-EMmER VOLTAGE

1-.

i3 -500

-08

-0..6

-3 -5

-10.

-30 -SO

-100

Vel! (VI, COLLECTOR-EMmER VOLTAGE

c8SAMSUNG SEMICONDUCTOR

Ta -

50.

100

~

lSO

T. (-C). AMBIENT TEMPERATURE

81

KSA928A .'

PNP EP1TAXIAl SILICON TRANSISTOR

AUDIO POWER AMPLIFIER
TO-921,

• Complement of KSC2328A
• Collector Dissipation Pc =·1 Watt
• 3 Watt Output Application

ABSOLurE MAXIMUM RATINGS (Ta =25°C)
Characteristic.

Symbol

. VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg .

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Rating

'Unit

-30
-30

V
V
V
A

~5

-2
1
150
-55- +150

W
°C
°C
1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Outpu.t Capacitance

BVcBO
BVcEo
BVEeo
leBO
lEBO
hFE
VBE (on)
VCE (sat)
Cob

Current Gain Bandwidth Product

h

Test Conditions

Ic = -100";', IE =0
Ic=-10mA,le=0
IE=-1mA,lc=0
Vce=-30V,IE=0
VEe =-5V,lc=0
VcE =-2V,lc =-500mA

Min

. Typ

-30
-30
-5
-100
-100
320
-1.0
-2.0

100

Vc~=-2V,.lc=-500mA

Ic = -1.5A, Ie = -0.03A
Vce=-1OV, IE =0,
f=1MHz
VCE=-2V,lc=-500mA .

Max

Unit

V
V
V
nA
nA

48

V
V
pF

120

t.1Hz

hFE CLASSIFICATION

c8

Classification

0

y

hFE

100-200

160-320

SAMSUNG SEMICONDUCTOR

82

KSA928A

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE·EMITTER ON VOLTAGE

-1400

-1200

I

rL800
ooo

Jr

IB""-iA

i

-1200

Vi

i

Ii

I

la--5mA

i

j

i

I'·'

;'

1-800

1

r

1··-r
1·=-r
1··-r

I
I

A

u

1-

VCE=-:!II

i 1·--rA

I

400

'I

.!i

-6

-4

-200

I

-8

- 10

- 12

- 14

I
-0.2

-16

-0.6

-0.8

-1.2

-1.0

COLLECTOR·EMITTER SATURATION VOLTAGE

DC CURRENT GAIN

~
.. 500

-0.4

I

VIE M. BASE-EMITTER VOLTAGE

Vel! (V), COLLECJOR..EMlTTER VOLTAGE

zl°OO

J

A

I
-2

i

A

i

-200

I

3

mRBDI

"I
1

z
~ 300 f-++++tttlt--+-H+HltrV,...""-I.-_-1::2VH-ttltl--H-H

a

Ic ... 5OIB
T.....25OC

!E,
~1°O._1I1"-..

1

50

30

10L--L~LW~-L-U~~~-LLU~__~~

-1

-3

-10

-30

-100

-OD!

-1

-300 -1000 -3000

-3,

Ie (rnA). COLLECTOR CURRENT

-5

~

I
~
rt

-3

1.0

"

i

I'\..

0.8

o.a

'\

o

~

~

T.

ciS

50

'""- '"

50

~

-300

-1000 -3000

m

~

rC) AMBIENT TEMPERATURE

SAMSUNG SEMICONDUCTOR

~

i

Ie (MAX) PULSE
IC(MAX)

-1

g -0.3

i'...

0.2

o

!-----

II:-Q.5

Q.4

-100

SAFE OPERATING AREA

1,2

~

-30

Ie (mA), COLLECJOR CURRENT

POWER DERATING

iiii

-10

Ta .. 2SOC

D.C

1s~ms

OPERATION

-0.1

So
.!I-o.o5

.0.03

-OD!
~

-0.1

VCEOMAX

III
-0.3-05- -1
-3 -5 -10
-30-50
Veo (V). COLLECTOR EMITTER VOLTAGE

-100

83·

KSA931

PNP EPI,TAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER
MEDIUM SPEED SWITCHING

TO-92L

• Complement to KSC2331
• Collector-Base Voltage Vcso = -8OY
. • Collector Dlssipetlon Pc =1W

ABSOLUTE MAXIMUI\II RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VeBO
VeEO
Veeo
Ie
Pc
Tj
Tstg

Rating

Unit

-80

V
V
V
mA

-60
-8
-700
1
150
. -55-+150

W
°C
°C

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdoy!n Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current.
Emitter Cut-off Current
DC. Current Gain
Collector-Emitter Satl!ration Voltage
. Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVCBO
BVeEO
BVEBO
leBO
leBO
hFE
VeE (sat)
VeE (sat)

h
Cob

Test Conditions
le=-100pA,IE=0
le=-10mA, le=O
le=-100pA,le =0
Vce =-6OV,IE=0
VEe =-5V,le=0 .
Vce=-'lV,le=-50mA"
Ic = -500mA,le = -50mA"
Ie = -500mA,le - 5OmA"
VCE = -10V, le=-50mA
Vce =-1OV,IE=0
f=1MHz

Min

lYP

Max

-80

-60.
-8

40
-0.3
-0.9
100
13

-0.1
. -0.1
240
-0.7
-1.2

Unit
V
V
V
pA
pA
V

V
MHz
pF

"Pulse Test PWs350,..s, duty cycles2%

hFE CLASSIFICATION
Classification

R

0

Y

hFE

40-80

70-140

120-240

c8

SAMSUNG SEMICONDUCTOR

84

KSA931

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACI'ERISTIC

BASE-EMITTER ON VOLTAGE
-1000

-460

-500

i ... J,.a,.A

f----

r- I-VOE.-211

1--

/[....-- /a.-1A,oA

/..~,;;.

-.".

~

. . - 1••

V"-.-~ ~..-r
- -

V

- -

-

'.

/----"""

~1.2""
1

I

/:

. ";I··-~t
: I

VI
0.

T

I

T

I

-10. -'6 -20 -25 -30 -35

-5

'I· --r

I

-

!

-6

1

-+-/a.-OA,AI

I

- -_.

I

I

1

-50

:

_1.~-o.a,.A+

'/ -~~ --+V
:
-100

I

J•• _1.o.At-i-

-~

-3

-,

-45 -50

m__

o

. V. (VI, _

5001-- Vce.-211
300

-,0.

~

-OB

-OB

-1D

-1.2

EMITTER VOLTAGE

BASE-EMmER SATURATION IIOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN

1ooo:

-0.4

-G.2

V.. (VI, -.ucmR EMITTER VOLTAGE

6.---

1e-1018

-3

I5 1

VBE(aaI)

-06

It

-03

IB ,
>
t -o.os

II

-0.

i

ee(BBI)

-1J.03

-001
-1

-3 -5

-10.

-30 -50 -100

-300-500 -1000

-,

-3 -5

1c(JilA),COUEC:IUR~

SAFE OPERATING AREA

POWER DERATING

sooo

'A ---1---+---+-----1--- - ~

I

i

'.2 f - - - t - - i - - - j - - - - - ·
,D

lOB
[OB

-··f",K .
--

-

3000

81000

+-~
--

~

Il :
s

l.OA

'-10
-30 -50 -100 -300-500 -1000
Ie (mA), COLJ.ECIOR CURRENT

I",

'00

DCOPER!iI'ION

ffiIJ

1. T._25OC
2. -Single pulse

50
.30

0.2

I
25

50

75

0
100

125

150

3

5

'0

30 50

100

300

Veo (VI, COI.LECIOII EMITTER VOLTAGE

c8 S~MSUNG

SEMICONDUCTOR

85

KSA952

PNP SILICON 'TRANSISTQR

GENERAL PURPOSE APPLICATIONS
HIGH TOTAL POWER DISIPATION
(PT=600 mW)

TO-92

High h.E and LOW Vc.(sat)

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
18
Pc
Tj
Tstg

R.atlng

Unit

-30
-25
-5
-700
-1'50
600
150
-55"'150

V
V
V
mA
mA
mW
·C
·C

1 .. Erhit1er 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
C harllcteristic
• Base Emitter Voltage
Collector Cutoff· Current
Emitter Cutoff Current
• DC Current Gain
·Collector Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Output Capacitance
Curent Gain Bandwidth"Product
• Pulse test: PW

.
~ ~ B~~\6""':":2

-300

~~
~~
V

~

i -200

V""
"",,,
~~~-z,ur
'-I

-100

5"'''-

.::b,."'j-'
i~

IB=-1:0mA

1 r/'"
.J!

_,.16«'' '

~~ .... _A.<%'''-

• ...,.,...6'!!J,,;c-.... 111

~--~5m.6i

....... ~
-1

•

19 -0

.

-2

-4

-3

-5

.... 10

-20

-30

-50

-40

V.dV),COLl.ECTOR EMITTER VOLTAGE

V.. M,COLl.ECTOR EMITTER V.OLTAGE

DC CURRENT GAIN va.
COLLECTOR CURRENT

1000 _ _

-10

PULSE

500

I

BASE AND COLLECTOR SATURATION
VOLTAGE .... COLLECTOR CURRENT

1

Ie 0'18
PULISE

'-5

;!

. ~

200

~

100_,,_
50

~

2.OV

-1.QV

~ w~+++HH*-4~~~~-H~~~~~~

la~!!~I§§!~II~~~II~!!~~

"J8 5~

_1~.1~~llU_~1~~UW_W,La~-U~_~,~aa~~~_lWooo.
IdmA~ COLLECTOR

-1000
-500
-200
-100

CURRENT

COLLECTOR CURRENT ....
BASE EMITTER VOLTAGE
PULSE

=

I

/
I

t-a.a5

"J

-0.02

mi~

-0.0

11111

-0.11

-1

-10.

-100

-1000

lc(mA), COLLECTOR CURRENT

mEl.
1'=-_11
vce=-e.ov

1000500

20

..:

-0 .2

-0.5

J
.-0.6

0.7

0.8

V.(V), BASE EMITTER VOLTAGE

.c8

-0.2

• 1

~ -0.

iii.

1

~a.4

~

1fla~lEI.

If

5

-0 .1

V.. (saij

1-0.5

I

5
2

1'

1200~~4-HH~--~~~~

/

-50

a

2

GAIN BANDWIDTH PRODUCT ¥s.
EMITTER CURRENT
.

Vee"" 6.OV

a

g

SAMSUNG SEMICONDUCTOFI

-0.9

Ie (mA) EMITTER CURRENT

88

PNP EPITAXIAL SILICON TRANSISTOR

KSA953/954

INPUT AND OUTPUT CAPACITANCE •••
REVERSE VOLTAGE
'DO

f

1.0MHz

SAFE OPERATING AREA
-1000

.t

8 -50

Coo 11,-0)

........

A5

1-2

"""

0

o _,
u
0

1
Ji -

5

~

01-02

-0.5
1 -2
-5
10 -20 -50 -100
VcaM, COLLECTOR-BASE VOLTAGE
V,,.(V), EMITTE~SE VOLTAGE

,-,

;Ii

~~

-2

,

i'-

I
-2

10

-20

-50

-100

Vc,(Y), COLLECTOR TO EMITTER VOLTAGE

I

POWER DERATING

De
07

F
I"

0.4

~

03

~

"- '\.

0.2

"\

"-

'\

,

'\
25

50

75

100

125

150

175

T,t°C), AMBIENT TEMPERATURE

c8

SAMSUNG SEMICONDUCTOR

89

KSA992

: PNP EPITAXIAL SILICON TRANSlsrOR

AUDIO FREQUENCY LOW NOISE AMPLIFIER

TO-92

• Complement to KSC1845

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
. Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector· Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VE80
Ic
IB
Pc
Tj
Tstg

Rating

Unit

-120
-120
':5
"
-50
-10
500
150
-95-150

V
V
V
mA
mA
mW
·C
·C
1. emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Characteristic

Symbol

Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

ICBO
ICEO
I~BO

Base Emitter On Voltage
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product
Output CapaCitance
Noise Voltage

hFE1
hFE2
VBE (on)
VCE (sat)

fr
Cob

Test Condition
VcB=-120V,IE=0
VcE =-100V, RBE=oo
VEB=-5V, Ic=O
VCE=-6V,lc"'-0.1mA
VcE=-6V,lc =-1mA
VCE=-6V,lc =-1mA
Ic =-1.omA, IB=-1'mA
VcE =-6V; IE=1mA
VCB = -30V, -IE=O
f=1MHz

NV

Min

Typ

..
150
200
-0.55
50

500
500
-0.61
-0.09
100
2
25

Max
-50
-1
-50
800
-0.65
-0.3

Unit
nA
J-IA
nA

3

V
V
MHz
pF

40

mV

hFE(2) CLASSIFICATION
Classification

P

F

E

hFE(2)

200-400

300-600

400-800

c8

SAMSUNG SEMICONDUCTOR

90

KSA992

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

-1

a

r-W.,~V

I

LV

() -0

i

611'

V

-0. 2

L~I""

V ./
k'" ...... lL V
I.- ~

~~O!!~

I---""

r-

~ l - f-

a

- 20

n

-~
\.~~02~

,

f--

- 40

V..cV~

V-

,

y~

lL

V V
0-0
u
'11'
I..---' I---""

j

y

.;77J

-0 8

STATIC CHARACTERISTIC

- 60

,!-O
80

100

DC CURRENT GAIN
100a

-1

II

90a

800

~

~

700

~

~

Ic=10-18

-1 - -

~

VBElsat)

~ -0 5
., -0 3

.~ 500

g

•

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

-3

~

600

a

COLLECTOR-EMITTER VOLTAGE

-5

~

Vce=-BV

Z

-5 .
Vca~

COLLECTOR-EMITTER VOLTAGE

~

i

400

I'

1300

...... f-"

~ -0 1

VCE{sat)

d

1- 005

200

~-OO3

100

a

-001

0.03

- 0.1

0.3 05

Ic(mA~

-1

5

10

-0.0 1
0.1

-30--50 100

03

0.5

1

-3 -5

-10

-30

50

100

Ic(mAi COLLECTOR CURRENT

COLLECTOR CURRENT

POWER DERATING

COLLECTOR OUTPUT CAPACITANCE

800

10

700
5

:e-~~e

......

I'"

3'

~

a

"

..~

~

50
T.(·C~

c8 SAM~UNG

i

II

I\.

75

0.5
03

'\

10a

25

Ii

1l

~

100

125

150

175

AMBIENT TEMPERATURE

SEMICONDUCTOR

200

0.1
-·1

-3 -5

-10

Vco(~

-30 50

100

300--500

1000

COLLECTOR-BASE VOLTAGE

91

KSA992

PNP EPITAXIAL SILICON TRANSISTOR
CURRENT GAIN-BANDWIDT!1 PRODUCT

l.tmA), EMITTER. CURRENT

c8

SAMSUNG SEMICONDUCTOR

92

KSA1013

PNP EPITAXIAL SILICON TRANSISTOR

COLOR TV AUDIO OUTPUT
COLOR TV VERTICAL DEFLECFION OUTPUT

TO-92L

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
.Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Is
Pc
Tj
Tstg

Rating

Unit

-160
-160
-6
-1
-0.5
900
150
-55"'150

V
V
V
A
A
mW
°C
°C

•

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Test Condition

Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance

Icso
lEBO
BVcEo
hFE
VCE (sat)
VBE (on)

Vcs= -150V, IE= 0
VEs =-6V, Ic=O
Ic= -1 OmA, IB=O
VcE =-5V, Ic =-200mA
Ic =-500mA, Is=-50mA
VcE =-5V, Ic=-5mA
VcE =-5V, Ic=-200mA
VcB =-10V,IE =0
f=1MHz.

hFE

fr
Cob

Typ

Max
-1
-1

-160
60
-0.45
15

320
-1.5
-0.75
50
35

Unit
/AA
/AA
V
V
V
MHz
pF

CLASSIFICATION

Classification

R

0

y

hFE

60-120

100-200

160-320

c8

Min

SAMSUNG SEMICONDUCTOR

93

PNPEPifAxlAL SI.LlCON T.RANSISTOR
STATIC CHARACTERISTIC

-

-1.0 EMIT ER COMMaII'
Ta -2S.oC

IV

I

'It

0-0.6

!

B -0.4

~
-0.2

.~+A~

IB=-15mA

!/ ,,-:

-os

~

DC CURRENT GAIN
1000

I.

lomA

IB~-BmA

~V

4j5mA

Ia-

tJv

~ 100

~
Z

so

rz:
rz:

30

III

IS"'"-jmA

V

ER COMM N
T.=25'C=

300

l-

1

M

500

Q

Vee.= 5V

I

0

g

VCE=~2V

10

i

IB~-3mA

:,..~

.,.

I•

~~A

.1.

1mA

0

-s.

12

-16

10

-20

30

50

V.,.(V), COLLECTOR-EMITIER VOLTAGE

DC CURRENT GAIN

- 500

1000

3000

COLLECTOR-EMITTER SATURATION VOLTAGE

1000s~~

-10

EMmER COMMON
VCE=-10V
---Vce""-5V

500

300

100

IdmA), COLLECTOR CURRENT .

EMn;:~R 2~~M

_5

.~g

-3

- 11--·

~

!i -0. 5
~

-0 3

tli
.~
30 I--,--+-t-HH--H*--+~~--++H-H

Li-"

-0 .1

!.J-o.o

Ic/1B=10

=5

-0.03

1~1LO----~~3~0-L_~5~0~_~'~OLO-----L-_~30~0~_-5~00-L_L,LO~00
Ic(mA~

-0.0 1

-

3

BASE-EMIITER VOLTAGE

0

"

U_ O.6

J

0.2

0.4

- 06

J

- 0.8,

V..· 'sal) 1Vl, BASE-EM"!£'! VOLTAGE

c8 SAMSUN~

1000

1"1'1'

II

-0.2

o

-

0

I
I

~

-

300 500

50

,

4

100

COLLECTOR CURRENT

100

I
II

-0. 8

to

30 50

10

COLLECTOR OUTPUT CAPACITANCE

-1.0 EMITTER COMMON
Vce=-5V

i§

5

IdmA~

COLLECTOR CURRENT

SEMICONDUCTOR

1

1.0

-4 -5

-30

-10

VcaM.

-50

-100

300

COLLECTOR-BASE VOLTAOE

94

KSA1013

PNP EPITAXIAL SILICON TRANSISTOR
CURRENT GAIN-BANDWIDTH PRODUCT

1000

I

SAFE OPERAnNG AREA
-1 0

;':~2~~N

s
-3

0

"

V

-

5V

-

2V

1il

~

t

f-- Ie MAX.' (PUise

~~~~

I

1

sF='

0.
~
-0. 31--

+--'1"

.";:0..

~

-0. t

~-o.oS

~

·8-0.03

"'~d"

;;f

C)

ll_o.o 1

~~~

-0.005
-0.003

1
-1

3 -5

-10

IdmA~

-30 -50 -100

COLLECTOR CURRENT

-300

-0.00 1
-1

~=
;;i3

5

VceI~

-10

-30-50 -100

IT
300-500-1 00

COLLECTOR.£MITTER VOLTAGE

•

c8

SAMSUNG SEMICONDUCTOR

95

PNP EPITAXIAL SILICON TRANSISTOR

KSA1150

LOW FREQUENCY POWER AMPLIFIER
TO-928

• Complement to K8C2710
• Collector Dissipation Pc = 300mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter~Base Voltage
Collector Current (DC)
• Coflector Current (pulse)
Collector Dissipaiton
Junction Temperature
Storage Temperature
•

PW:s~OmS,

Symbol

Rating

Unit

Veeo
Veeo
Veeo
Ie (DC)
Ie (pulse)
Pc
Tj
Tstg

-40
-20
-5
-SOO
-700

V
V
V
mA
mA

300

rrfJV

150
-55-150

OC

°C
1. Emitter 2. Collector 3. ~..e

duty Cycle:s 50%.

ELECTRICAL CHARACTERISTICS (Ta = 25°C) .
Characteristic

Test Condition·

Sy,,!bol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
°DC Current Gain
• Collector-Emitter Saturation Voltage
o Base-Emitter Saturation Voltage

BVcao
BVceo
BVEBO
leBO
lEBO
hFe
Vee (sat)
VeE (sat)

le=-100pA,le=0
le=-10mA, le=O
IE=-100pA,le=0
Vee=-25V,le=0·
Ver;=-3V,le=O
Vee=-W,le=-100mA
Ie';' -500mA,le = -50mA
le=-SOOmA,I.=-50mA'

Min

Typ

Max

-40
-20
-5

40
-0.3
-1.0

-100
-100
. 400
-0.4
-1.3

Unit
V
V
V
nA
nA
V
V

• Pulse Test: PW::; 350,.s, duiy cycle::; 2% ,

hFE CLASSIFICATION
Classification

R

0

y

G

hFE

40-80

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUCTOR

96

KSA1150

. PNP EPITAXIAL SILICON TRANSISTOR
BASE·EMITTER ON VOLTAGE

STATIC CHARACTERISTIC
-5011

-1000

-460

--

V

I-~

VI/'

-250

j...---200

Lso
.I!

-100

. . . 1--

-300

...... ..... la--1i"
laj-1.2j

---

fit,...-- ..-

-300

,

-500

L la--l.8mA

1-100
D

1B __1.omA

--

~

~I

i

la--G.8mA

laI __, I

f

la-1-DAf

l--"

-so

i

Jr--+

A

o

-2

-4

-8

-8

-10

-12

I - I-VcE--1V

-SO
-30

-1.
-5
-3

-

1

-14 -16 -18

-0-2

-20

Ya!(V),~ER\IOI._

DC CURRENT GAIN

•

-C18

-C18

-1.0

-1.2

-...nTER ¥DLTAOE

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

-1

1000

!iOO

-CIA

-(Y).

~VC.

51-- fe-lOla

__ l,

I -

I

i

300

3

I§ -o.s

1

i'..
--

g

--

V8E(1It)

-Q3

IB
>
i._

LV

-0.1

30

i-o.o3

---

I ! iI

10

I'

Ii

J

-1

V""(18I)

-3 -$

-10

-om

-30 -SO -100

-300-500-1000

Ie {mAl. CQU.ECI'OR CURRI!NT

-1

-3 -5

-10

-30 -SO -100

-300-500 -1000

I e . CQU.ECI'OR CIRINT

COLLECTOR OUTPUT CAPACITANCE
100
!_lMHz
IE-O

30

r-..

T"""- t'1'-

t--t-

r--...

5
3

1

-Cl5

-1

-3

-5

-10

--30

Yeo (VI; COLLECIOA-IIAII \IOI.1lUJE

c8

SAMSUNG SEMICONDUCTOR

97

KSA1t74

PNP EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY LOW NOISE AMPLIFIER
TQ-92S

-. Complement to KSC2784

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcoo
VCEO
VEoo
Ic
Is
Pc
Tj
Tstg

-120
,-120
-5
-50
-10
300
150
-55-150

V
V
V
mA
mA
mW ·C
·C
, _ Emitter 2. CoHector 3. Sase

ELECTRICAL CHARACTERISTICS (Ta=25°C)Characteristic

Symbol

Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Icoo
IcEo
IEoo
hFEl
hFE2
VSE (on)
VCE (sat)

Base Emitter On Voltage
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance

Cob

Noise Voltage' .

NV

fr

Test Condition
Vcs =-120V,IE=0
VcE=-100V, RBE=oo
VEB =-5V, Ic=O
VcE=-6V,lc =-0.1mA
VCE=-6V,lc=-1mA
VCE=-6V, Ic=-1mA
Ic =-10mA,l s=-1mA
VcE =-6V,IE=1mA
Vcs=-30V, IE=O
f=1MHz

Min

Typ

Max
-50
-1
-50

150
200
-0.55
50

500
500
-0.61
-0.09
100
2
25

800
-0.65
-0.3

Unit
nA
jJ.A
nA

3

V
V,
MHz
pF

40

. mV

hFa2) CLASSIFICATION
Classification

P

F

E

hFd2)

200-400

300-600

400-800

c8

SAMSUNG SEMICONDUctOR

98

KSA1174

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

-10

~J y
U~
.; ~,r wt:. k

-08

i

/

~

U -06

~

V

V

~.

0-04
U

V'

./

""
........

V
-02

V
~

~

j

0

(11

-4

I'

E

~=o 80

li
-2

- 100

,
j

=

1a=-tA
1

",

18=01

-

-

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

I

-1 0

II

900

Ic=10~p

5

VCE =-6V

3

800

a::.

-

Vc,(V), COLLECTOR-EMmER VOLTAGE

DC CURRENT GAIN
1000

~

=

12~

",=-1,.1\.=

~

Vc,(V), COLLECTOR-EMITTER VOLTAGE

~

1

/'

'"

U

1.L-02~

- 80

40

1/

-6

~

-L
",=J6,.1\

u

-~

I-- ~ ~

20

"

1. JO,.A

V

-8

a:
u

...,.J_o~

-- I--

Ia=~ ::.- ~

i5a:

;...J?

V

V

...

~'y

/'

V
V
V

j

STATIC CHARACTERISTIC
-10

'700

11-- .
Vee(satj

600

5

500

B
g

400

i

300

3

...... 1-'

1
Vce(satj

5

200

3
100
0
-001

0.03

-

01

0305

1

3

5

- 10 - 30-50

100

-0.0 1
Pl

-03-05

POWER DERATING

-3 -5

1

Ic(mA~

lc(mA), COLLECTOR CURRENT

-10

COLLECTOR OUTPUT CAPACITANCE

800

0

,,=ttB

f=lMHz

700
5

~

600

~

500

I
i

3

I

400

30

0

200
100

"'"
25

T"--

I

I

!

1

.-.-'''
5

.........

50
T.,(·C~

c8

- 50 - 100

-30

COLLECTOR CURRENT

3

i'....

75

-

""

100

125

150

175

AMBIENT TEMPERATURE

SAMSUNG SEMICONDlJCTOR

200

r-

-

1

-3 -5

-10

-30-50

100

30G-500

1 aoo

Vca(V~ COLLECTOR-BASE VOLTAGE

99

KSA11'14

,. PNP EPITAXIAL SILICON TRANSISTOR
CURRENT GAIN-BANDWIDTH PRODUCT

6'~.'~O~3~05~'~~3~5~'O~~30~50~'00
le(mA), EMITTER CURRENT

ciS

SAMSUNG SEMICONDUCTOR

100

KSA1175

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER
• Complement to KSC2785
• Collector-Base Voltage VCBo=-60V

TO-92S

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ie
Pc
Tj
Tstg

Rating

Unit

-60

V
V
V
mA
mW
°C
°C

-50
-5
-150
250
150
-55-150

1. Emiiter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage

BVCBO
BVCEO
BVEBo
ICBO
lEBO'
hFE
VCE(sat)
VBE (on)

B!lse-Emitter On Voltage
Current-Gain-Bandwidth Product
Output Capacitance

h

Noise Figure

NF

hFE

Cob

Test Condition
Ic =-100pA,IE=0
Ic=-10mA, IB=O
IE = -10pA, Ic =0
VcB =-60V,IE=0
VEB =-5V,lc=0
VcE =-6V,lc=-lmA
Ic =-100mA,IB=-10mA
VcE =-6V,lc=-lmA
VcE =-6V,lc =-10mA
VCB=-10V,I E =0
f=lMHz
VCE=-6V,lc =-0.3mA
f=100Hz, Rs=10KO

Typ

Max

-60
-50
-5

40
-0.18
-0.50
50

-0.1
-0.1
700
-0.3

-0.62
180
2.8

-0.80

6.0

20

Unit
V
V
V
pA
p.A
V
V
MHz
pF
dB

CLASSIFICATION

Classification

R

0

Y

G

L

hFE

40-80

70-141)

120-240

200-400

350-700

c8

Min

SAMSUNG SEMICONDUCTOR

101

PNP EPITAXIAL SILICON TRANSISTOR
-

'KSA1175

,

STATIC CHARACTERISTIC

BASE-EMITT\OR ON VOLTAGE

i
8_
§

I

10

_ , , _

-5

:::I

_3

8

i
{

o

-2

-4

-8

-8

-10 -12 :-14

-16 -18 -20

f-

e1

-o.s
-D.3

1111lll
l

-0,1 L....!.-...L---..l_L.."!-J.-;--'-_L-.,L..-L-'---I
o
-0.2
-0.4
-0.6
-0.6
-lD
-t2

VOl! (VI, cou.ecroR-£IIITTER VOLTAGE ,

Va! (VI, 1lASE-EMITTER VOLllIGE

DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT

1000

1000

I=:

Vee_ -61/

I~CE--6I/

z
~100

I:

,,/

~~

g

i

10

5
3

0

1

-0.1

-0.3-0.5

-1

-3 -5

-10

-30-60

-115

-100

-1

I, (mAl, COLLEcroR CURRENT

-3

-5

-00

-10

Ie (mA), COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE

-10

5~
3

1C""101s

, f=1JHl

,

I

~-O

10

,-

1
VBE(sa11

""

t-

,,"

f-1

---

VeE (sat)

\'-.. ~

-ClD1
-0.1

1
-0.3-0.5-1

-3 -5

-10

-30-50 -100

Ie (mA), COLLEcroR CURRENT

c8

f'

I-~ j-'

SAMSUNG SEMICONDUCTOR

-1

-3

-5

-10

-30 -50

-100

-300

Vea (VI, COLLEcrolWlASE VOLTAGE

102

PNP EPITAXIAL
SILICON TRANSISfOR
.

KSA1182

.

LOW FR,EQUENCY POWER AMPLIFIER
SOT-23

• Complement to KSA2859

ABSOLUTE MAXIMUM 'RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vceo
Vceo
Veeo
Ic
Pc
Tj
Tstg

Unit

Rating
-35
-30

V

V

-[5

-500
150
150
-55-150

V
mA
mW
·C
·C

1. Base 2, Emitter 3, ColleCtor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance

hFE

Symbol

Test Condition

Iceo
leeo
hFF1
hFe2
Vce(sat)
Vee(on)

Vce =-35V. le=O
VEB =-5V.lc=0
Vce =-1V.lc =-100mA"
Vce=-6V. Ic=-400mA
Ic=-100mA,le=-10mA
Ic=-:-100mA. Vce =-1V
Ic=-20mA. Vce =-6V
Vce= -6V, le=O
f=1MHz

fr
Cob

hF" (1)

Typ

70
25
-0,1
-0,8
200
13

Max

Unit

-0,1
-0,1
240

,..A
,..A

-0,25
-1.0

V
V
MHz
pF

Marking

CLASSIFICAT,ON
Classification

Min

0

y

70-140

120-240

hFe grade

c8

SAMSUNG SEMICONDUcroR

103

KSA1182

,PNP. EPITAXIAL SILICON TRANSISTOR
BASE-EMITTER ON VOLTAGE

STATIC CHARACTERISTIC
-200

-180

i

-,140

-~

t-

-500

1.6mA I
Is=-1.4mA

.",.....

i-

80

I

-

".

-40

Ia--.o.emi
1e--o.6~A

i

's-=-O.4mA

I.

I

'e,"-o·rA

"...

-20

Vce=-1V

Is ",,'-1.2mA

-'

I-roo II..".
~
~ -80
II

J/

~

-300

./ ....... ;;;;;;; 'e-- 1,.Omj

If

~-12O

-1000

J/

-1 0

S

3

II

1

o

-1

-2

-3

-4

-5

-6

-7

-8

.....0.2

-9 -10

-0.4

DC CURRENT GAIN '

lOOOmlllfBl_
VeE

-1.0

-0.&

-1.2

V.. (VI. _-EMITTER Yl)LTAIliE

V"" (VI. COLLEC1OfI.EMmER YOLTAGE

~

-0.&

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMmERSATURATION VOLTAGE
-10
~Ic

lV

101e

500

3OO~~~~~~r1~+H»--+~~HH

I

1

I L....J.~
roo

VBE (sat)

..l-!-H+t1t--ti'-!-lJ

g

i

~~1-++~~-+-rrH~--~~+HH

V

1
VeE (sat)

10 L--'-~~L.W._'--''''''''.J.I.L'''-'''''''-'-I..U.u.u
-1
-3 -S -10
-30 -50 -100
-300-500-1000
Ie (mA). COLLECIOR CURRENT,

-ClO1
-3 -5

-10

-30 -50 -100

-300-500 -1000

Ie (mAl. COLLECIOR CURRENT

COLLECTOR OUTPUT CAPACITANCE

JM~

20

..

IE=O

r-..

-1

-3

-f

i""'"

-10

-300

Veo (VI. COLLECIOR-IIASE YOLTAGE

c8

SAMSUNG SE,..ICONDUCTOR

104

KSA1298

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER
50T-23

• Complement to KSC3265

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current '
Collector Dissipation
Junction Temperature
Storage Temperature

Vceo
VCEO
VEBO
Ic
IB
Pc
Tj
Tstg

Rating

Unit

-30
-25
-5
-SOO
-160
200
150
-55"'150

V
V
V
mA
mA
mW
DC
DC
1. Base 2. Emitter 3. CoUee!or

• Refer to KSA643 for graphs.

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC current Gain

BVcEo
BVEBO
ICBO
lEBO
hFEl
hFE2
VCE (sat)
VBE (on)

ic=-10mA, IB=O
IE=-1mA, Ic=O
VCB =-30V, IE=O
VEB =-5V, ic=O
VcE =-1V,lc=-100mA
VCE =-1V, ic=-SOOmA
Ic =-500mA,IB=-20mA
VcE =-1V, ic=-10mA
VcE =-5V,lc=-10mA
VcB =-10V, I, =0
f=1MHz

-25
-5

Collector Emitter Saturation Voltage
Base-Emitter (om) Voltage
Current Gain-Bandwidth Product
Output CalJa(;,tanCe

hFE

fr
Cob

Typ

Max

-100
-100
320

100
40

-0.4
-O.S

-0.5
120
1~

Unit
V
V
nA
nA

.v
V
MHz
pF

Marking

(1) CLASSIFICATION
ClaSSification

0

y

hFE (1)

100-200

160-320
hFE grade

c8

SAMSUNGSEMICONDUCTOR

.105

KSA13t8

PNP EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER
TO-92S

• Complement to KSC3488
• Collector Dissipation Pc 300mW

=

ABSOWTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
• Collector Current (pulse)
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VeBO
Veeo
VeBO
Ie (DC)
Ic(pulse)
Pc
Tj
Tstg

-30
-25
-5
-300
-500
300
150
-55-150

V
V
V
mA
mA

rnW
°C
°C
1. Emitter 2. CoHector 3. Base

• PW:;;10ms, duty cycle :;;50%

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
• DC Current Gain
• Collector-Emitter Saturation Voltage

BVeBo
BVeeo
BVeBo
leBO
leBo
hFE
Vee(sat)

Test Condition

le=-1001A,le=0
le=-10mA, IB=O
Ie'" -101A, Ie =0
VeB=-25V,le=0
VEB =-3V,le=O
VCE= -1V, le= -50mA
Ic·=-300mA,IB=-30mA

Min

Typ

Max

Unit

-100
-100
400
-0.6

V
V
.V
nA
nA
nA
V

-30
-25
-5

70
. -0.35

• Pulse Test: PW:;; 350,.s, duty cycle:;; 2%

hFE CLASSIFICATION
Classification

0

y

G

hFe

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUcroR

106

KSA1378

PNP EPITAXIAL SILICON TRANSISTOR
STATIC Cl:!ARACT~ISTIC

BASE·EMITTER ON VOLTAGE
-1000

.!

-500

lL·--l~
la __ 1AmA.

--

"V _

r:=
B·120 /Iv

-300

IB-~I.2mA

• -80

iB

la __ 1.o,

-100

-50

.II -80

-40

IB-i~i-

.....

-20

~ -30

IB __ o.&mA

V
V""

i

e

IB __ D.8mA

V
. . . . tV

~-loo

-- -II<:E __IV

8

!

.II

IB--o.bA

-1 0

5

3

o

I

1

o

-1

-2

-3

-4

-5

-6

-7

-8

-8

-~

-.D.6
-M
-ID
(V), IlASE-EMlTTER WlLTAIIE

-0.2

-10

_

VCE (V), COLLECIOR-EllmER WlLTAIIE

-1.2

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
-10

300

r--- . -H-ttlfttt--H+t+tH+-+++++t-H1

.~

I~

-~~-

i

50

~z

-5

r--

le_10la

-3

~

-1

I~

-~1

_(sat)

~ -M
~ -03

l..-I--H-tt!'l'tt'"""i-+-I-W

g

~

f-+--+++++I-H-----+--+ +-+++H+---+--l\H-I-H-H

/
VCE("'I

j'-M5

i-o.os
10~~~~w-~~~~__~~~~

-1

-3 -5

-10

-3OO-500-~

-30 -50 -100

-D.01
-1

-3 -6

-10

-30 -50 -100

-300 -500 -1000

Ie (mAl, COLLECIOR CURRENT

Ie (mA), COLLECTOR CURRENT

COLLECTOR OUTPUT CAPACITANCE

JJ

,

II

...",

Si'-;

I

I",

~

8

I

I

IE"O

10

.3

I--

I
-1

-3

-5

-10

i

I

-30 -50

-100

I
-300

Vee (V), COLLECIOR-BASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

107

:kSB5$4A

PNP EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY POWER AMPLIFIER
TO-92

• Complement to KSD47IA
• CollfJCtorCunent Ic=-1A
• Collector Dissipation Pc=800mW

ABSOLUTE MAXIMUM RATINGS (T. =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
.Collector Dissipation
JlJnction Temperature
Storage Temperature

VCrMJ
VCEf)
VerMJ
Ic
Pc

Rating

Unit

-30

V
V
V
A
rWN

-25
-5
-1.0
800
150
-55-150

Tj

Tstg

OC
°C
1. Emitter 2. Base 3. CoJlector

ELECTRICAL CHARACTERISTICS (T. =25°C)
Symbol·

Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base BlJtakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacital)ce

BVcrMJ
BVCEf)
BVErMJ
lcao
hFE
Vce (sat)
VBe (sat)
IT
Cob

Test Conditions
Ic=-100pA,le!"0
Ic =-10mA, iB=o
Ie = -100pA, Ic-O
VcB =-3OV,le=0
Vce =-1V,lc =-1oomA
Ic=-1A,IB= -0.1A
Ic =-1A,IB=-0.1A
Vee = -6V, Ic=-10mA
VCB=-6II, f=1 MHz,
le=O

Min

lYP

Max

-30
-25
-5
-0.1
400
-0.5
-1.2

70

110
18

Unit
V
V
V
pA
V
V
MHz
pF

hFE CLASSIFICATION
Classification .
hFE

c8

0

y

G

70-140

120-240

200-400

SAMSUNG SEMICONDUCTOR

108

KSB564A

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

DC CURRENT GAIN

i':._~
B30~

li

f--+--t-Hf+t+l-+-+-+.o..f+t+It- -

1 10 _

_

-0.2
-0.1

o

-1

-2

-3

-4

-5

-6

-7

-8

-10

-9 -10

-30 -50 -100

Veo M, COLLECIOfI.EMmER \101._ _

i

-3000

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMrrTER SATURATION VOLTAGE

CURREIfT GAlN-BANDWIDTH PRODUCT
, 200

-300 -500 -1000

Ie (mA), COI.LECJ:OII CURRENT

-10

vJJJ

II
II

II -

I
I

53 - 1c-101a

100

1

"

"

so

Va. lUI)

/"

1
VeE(aat)

f
~

-o.ot

10

3

5

30

10

SO

100

200 300

-1

-3 -5

-10

-30 -SO -100

-300

-1000,

Ie (mAl, COLL.EClOR CUMbT

Ie (mAl, COLLECIOII CUIIREHT
COLLECTOR OUTPUT CAPACITANCE

SAFE OPERATING AREA
-10

5
-3

~:;~~J;.

Ir=

'[loom.

1

~

"\

t-.

:t-0.1

i -o.os

""

-D.03
1~__~J-~~~__~~~1~~~

-1

c8

-3

-5

-10

-30 -SO

-100

SAMSUNG SEMICONDUCTOR

-o.ot
-1

-3

-5

-10

-30

-SO -100

109

KSB81 0

PNP EPITAXIAL SILICON TRANSISTOR

AUOIO FREQUENCY AMPLIFIER
• Complement to KSD1020

TO-92S

ABSOLUTE MAXIMUM RATINGS (Ta =25°'C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
"Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
• PW

~

10 ms, duty cycle

~

Symbol

Ratil19

Unit

VCBO
VCEO
VEBO
Ic
Ic
Pc
T,
Tstg

-30
-25
-5.0
-700
-1.0
350
150
-55-150

V
V
V
mA
A
mW
°C
°C

50 %

1. Emiiter 2. Collector 3 .. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
"DC Durrent Gain
"Base Emitter Voltage
".Collector-Emitter Saturation Voltage
"Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
" Pulse Test;

hF~(1)

PW~350

Test Condition

Ic~
lEBO
hFEl
hFE2
VBE
VCE(sat)
VBE(sat)
COB

VcB =-30V, 1.=0
VEB =-5V, Ic=O
VcE =-lV,lc =-100mA
VcE =-lV,lc =-700mA
VCE = -6V, Ic =-10mA
Ic =-700mA,IB=-70mA
Ic= -700mA, IB= -70mA
VCB= -6V, IE=O, f;= 1MHz
VcE =-6V,IE=10mA

h

Min

Typ

Max

Unit

-100

nA
nA

-100
70
35
-600

50

200
100
-640
-0.25
-0.95
17
160

400
..,.700
-0.4
-1.2
40

mV
V
V
pF
MHz

iJ$, Duty Cycle .s; 2% Pulsed

CLASSIFICATION

Classification
hFe(l )

.c8

Symbol

0
70-140

V

G

120-240

200-400

SAMSUNG SEMICONDUCTOR

110

KSB81 0

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

-50

i-"'"

V
/'
/

,.,.

i"""

;,...--

,...

DC CURRENT GAIN

10oo~~.
5oo~

1.+50"t

f---+-+-++++.ttt---+-iVce=-1V

V

3oo~--+-+-+~+++H---+-+-+~++tH

v:Ie=-JOO,.A

i"""'"

I........ ~

".

~ f-

r-

Y
-10

~

---

....... .......

1.= 11501

1.~-10~

~ f-"~
1e::-5O,.A

I'·~~!~I~~~~~~

i 5°t==+=+++~m===l=H++m
30~-~-+-+~rtHt---r-+-+1-rtHH

,,o

o

-10

-20

-30

-40

-50

10L-__
-10

-1000

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

V..(BBl)

w

CI)

V

i::;
ill

ii

>

V ..
./
VcelBBl)

-100

J

0
0

-

VCE=-6V

r-..

0

.......

5

!-"'

10=10"

1

-1 0

-10

-30 -50
Ic:(mA~

c8

CURRENT GAIN-BANDWIDTH PRODUCT

0

-50
-30

-1000

COLLECTOR CURRENT

1000

0

>-300

!

~~-L~~LU

0

~-600

~

-30 -50
Ic:(mA~

V"",y), COLLECTOR.£MITTER VOLTAGE

____
-100
-300 -500

~~-L~~LU

-100

-300 -500 -1000

COLLECTOR CURRENT

SAMSUNG SEMICONDUCTOR

-1

-3-5 -10

-30

lc(mA~

-100 -300 -1000 -3000-10000

COLLECTOR CURRENT

111

. PNP.EPITAXIAL SILICON TRANSISTOR

KSB811

AUDIO FREQUENCY POWER AMPLIFIER
• Complement to KSD1021

TQ-92S

• Collector Current le= -1A
• Collector DIssipation Pe =350mW

ABSOLUTE 'MAXIMUM RATINGS (Ta =,25°C)
Symbol .

C"aracterlstlc
Collector-Base Vohage
ColleclOr-Emitter Voltage
Emitter-Base Vohage
Collector Current
Collector Dissipation
Junction Temperature
Storag~ Temperature

Vceo
Vceo '
Veso

Rating

Unit

-30

V
V
V
A
rWN
,oC

-25
-5
-1.0
350
150
-55-150

Ie
Pc
Tj

Tstg

OC
1, Emliter 2. Collector 3. Base

ELECTRICAL CHARACfERISTICS (Ta =25°C)
Characterlsllc

Symbol

/

Collector-Base Breakdown'Vohage
Collector-Emitter Breakdown Vohage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Vohage
Current-Gain-Bandwiclth Product
Output Capacitance

BVeBO
, BVceo
BVeBO
lceo
hFE
Vee (sat)
VaE. (sat)

IT
Cob

'rest Condition
Ie" -100,.A. le"O
Ie" -10mA. iB =0
le=-100,.A,lc·0
VcB --3OV, le"'O
Vce =-1V,lc ",-100mA
Ic--1A,IB= -O.1A
Ic=-1A,IB ... -0.1A
Vee'"' -6V, le--1OmA
VeB--SV, f=1 MHz.
Ie';' 0

~p

Min

Max

-30
-25
' -5

70

-0.1
400
-0.5
-1.2

'.
110
18

Unit
V
V
V
,.A
V
V
MHz
pF

hFE CLASSIFICATION

o
70-140

c8

y

1

G

120-240

SAMSUNG SEMICONDUcroR

112

PNP EPITAXIAL SILICON TRANSISTOR

KSB811

STATIC CHARACTERISTIC

DC CURRENT GAIN

-0.9

..

-OB

iIi-G.7

Ii

(J-D.6

~-~

~-OA.-~~

g-G.3

4'"""'~"""'--'''''''''""'"-t'''-,2mA-'---~

.II

-0.1

o

-1

-2

-3

-4

-5

-8

-7

-8

.-10

-9 -10

-30 -50 -100

.Veo M, COLLEClOfI..EIIITTER 1IOI.TAQE

-300

-sOo

-1000

-3000

Ie (mA), COLLECIOR CURRENT

IlASE-EMITTER SATURATION VOLTAGE
COLLECTOR...eMmER SATURATION VOLTAGE

CURRENT GAJN.8ANDWIOTH PRODUCT
-10

200

v..LW

I·

!II

-- . -

~ I-

-

5

ie_1mB

3r--

1

""

VeE (sat)

,

10
-3

-1

-6

-30 -50

-10

"",'"

1

,

VeE (sat)

-o.ot

-100 __

-,

-3 -5

-10

-30-50 -100

-300-1000

Ie (mAl, COLLECIOR CURIIENT

Ie ImA), COLLEc:IOII CUIUIENT

POWER DERATING

COLLECTOR OUTPUT CAPACITANCE

"fit_~_

500

.,00C·--

450

50

..

t-1MHZ:_+.+-I+ttt----+--++-t-+t+H

3O~~r+-rHH+r----+-+-r++t+H

Z

~

I·: -,

i

i

!

400

350

1300

2
i

-0·_-

B

~

\

250

\

1\

200
150

.~

100

r-...

50

\

1~__~~~~~__~~~~~~

-1

-3

-5

-10

-30 -50

-100

25

50

75

100 125 150

175 200

225 250

r. (-C), AMIIfENT ~ATUR~

c8

SAMSUNG SEMICONDUCTOR

113

PNP'EPtrAXIAL SILlCO.N TRANSistoR

itSB1116/1116A

AUDIO FREQUENCY POWER AMPLIFIER
MEDIUM SPEED SWITCHING

TO-92

• Complement to KSD161611616A

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage

:

Collector-Emitter Voltage

Symbol

KSB11'16
: KSB1116A
KSB1116
: KSB1116A

Vcet:J
VCEO

Emitter-Base Voltage
Collector Current (DC)
-Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature

Veet:J
Ic
Ic
Pc
Tj
Tstg

Rating

Unit

-60
-80
-50
-60
-6
-1
-2
0.75
150
-55"'150

V
V
V
V
V
A
A
W
°C
°C

. f. Emitter 2. Collector 3. Base

·PW.'S10ms, Duty Cycle~50%

ELECTRICAL CHARACTERISTICS (Ta == 25°C)
Characteristic

Symbol

Collector Cutoff Current
Emitter Cutoff Current
: KSB1116
• DC Current Gain
: KSB1116A
• Base Emitter On Voltage
·Collector Emitter Saturation Voltage
• Base Emitter Saturation Voltage
Output CapaCitance
Current Gain Bandwidth Product
· Turn On Time
Storage TIme
Fall TIme

Test Conditions

Icet:J
IEet:J
hFE1

Vce=-60V, le=O
VEe=-6V, Ic=O
Vce=-2V,lc=-100mA

hFE2
VBE (on)
VCE (sat)
VBE (sat)
Cob

Vce =-2V,lc =-1A
Vce =-2V, Ic=-:-50mA
Ic=-1A; le=-50mA
Ic=-1A,le=-50mA
Vce =-10V,le=0
f=1MHz
VcE =-2V, Ic =-100mA .

fr

Vcc =-10V,lc=-100mA
le1 =.-le2=-10mA
VBE (off);: 2rv3V

ton

ts
tf

Min

135
135
81
-600

70

Typ

-650
-0.2
-0.9
25

Max

Unit

-100
-100
600
400

nA
nA

-700
-0.3
-1.2

mV
V
V
pF

120

MHz

0.07
0.7
0.07

/As
/AS
/AS

• Pulse Test: PWS350/AS, Duty Cycle.'S2% Pulsed

hFE(1) CLASSIFICATION
Classification

Y

G

L

hFE (1)

135-270

200-400

300-600

c8

SAMSUNG SEMICONDUCTOR'

*

114

KSB1'116/1116A

PNP EPITAXIAL SILICON TRANSISTOR

STATIC CHARACTERISTIC
-10r

STATIC CHARACTERISTIC
-1.0

I.~~~

-80

,-

I"

'r-

I

iB~~'00

~V

-

1.=~'50.A

-60

I-_

#D~~
.:):£-"
~=-3.5mA
'/_~.
,L

-- -

,.=1 200

4

le-- 5O,.,A
-20

-0.

2

-

-

- 10

I,=-J om/

".... r-

-

A

,

=-.'.OmA

V

=-J.5mA
-0.4

-0.2
Vc,(Y~

Vc,,(V}, COLLECTOR-EMITTER VOLTAGE

J5mA =

e... -

V

J

mA

=_{i;mA~

Y": _-

-

0

-

5_.

r:

-06

-1.0

0.8

COLLECTOR-EMITTER VOLTAGE

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
-10
1000 _
500

__
VeE.

-2V

300

.......

;':1111111
g

1

10 _

_

-001
Ic(A~

-0.03

-0 ,

SAFE OPERATING AREA

-10

1--[\

-5

ms

1

~·-0.5
~ -03

~

"\~

\

o. 6

.",

I15

\

0 4.

"1\

\

~

~

1

-0.05

~

-0.03

Iii

-0.0 1
1

-3

5

- 10

30

I

50

O. 2

\
\.

100

-

300 500 1000

V.,.{V}, COLLECTOR-£MtTTER VOLTAGE

c8

-3 -5

POWER DERATING

-3

"~ -0

-1'

o. 8

-10

I

-03

""AI, COLLECTOR CURRENT

COLLECTOR CURRENT

SAMSUNG SEMICONDUCTOR

o

25

100

125

\

50

75

150

T~·C~

AMBIENT TEMPERATURE

175

200

115

KSB1116/1116A

PNP EPITA.XIAL SILICON TRANSISTOR
CURRENT GAIN-BANDWIDTH PRODUCT

CObLECTOR OUTPUT 'CAPACITANCE

.lO00~mm~
sooa
:;.~~o~

300r--+--+-t-+l-++tt---+-+--H-H-t1H--t--+-I

-1

-3.

5

-10

-30

300

50 -100

Vco(V), COLLECTOR-BASE VOLTAGE

-h~.0~'~-~0~03~~0~.'~-~0~3~~-~'~~-+3~-5~-~'0
lelA), COLLECTOR CURRENT

SWITCHING TIME
10

~CC10'1:~~~
1f--

....-

5
3

"-

:--..

.1

•

0.05

\

0.03
0.0 1
-0.001

0.003

-0.01

-0.03

-0.1

I

0.3 0.5 -1

1c(A), COllECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

116

NPN EPITAXIAL SILICON TRANSISTOR

KSC184

AM FREQUENCY CONVERTER
IF AMPLIFIER

TO-92

• Current Gain Bandwidth Product fT =100MHz ~p)

• Complement to KSA542

ABSOWTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

RatIng
30
25

Vcso
Vceo
VEBO
10
Po
Tj
Tstg,

Unit
V
V
V
mA

5
50
250

rrW

150
-55-150

°C

DC
1. Emitter 2. Base 3 Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Symbol

Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVcso
BVceo
BVEBO
Icso
leBO
hFE
Vee (sat)

h
Cob

Teat Conditions
10 .. 100pA,le=0
10-10mA,IB=0
le--1OpA,10=0
V oB ",25V, IE ",0
Vea -5V, 10 =0
VoE",eN,lo=lmA
10=10mA,IB=lmA
VoE-eN,lo",lmA
VoB=eN,IE=O
f=lMHz

Min

~p

Max

30
25
5

40
0.1
100
2.6

0.1
0.1
1000
0.2

4.4

Unit
V
V
V
pA
pA
V
MHz
pF

:

hFE CLASSIFICATION
Clasalflcation

R

0

y

G

L

hFE

40-80

70-140

120-240

200-400

350-700

c8

SAMSUNG ,SEMICONDUCTOR

117

NPNEPITAXIAL SILICON .TRANSISTOR

KSC184.

STATIC CHARACTERISTIC
50

I I·

--

40

tr-

j ..,~,,,- f-j••1.o,.A_
I'
f--

I---

"..
lo-"'- r-

I

500

.1-

Vee ..

300

i..,J",,_ f--i..,J",,_ r--

-L.80~_ f-1..80~_ f--

[..--- I--

,......

i..40~_

10

o

BASE-EMITTER ON \fOLTAGE
1000

f--

1•. 2O~_ '--

I

I I

o

II

1

•

o

10

(1.2

Vel! M. COLLECTO~IT1ERVO~T~

DC CURRENT GAIN
240

1.0

(l6

1.2

CURRENT GAIN-BANDWIDTH PRODUCT
1000

II

220

v~~JJ

200

(1.6

0.4

V.. (V).IIASE-EMITTER WLTAGE'

f-- Vee ..

180

-

1
i

160

'40

58

'20

I""""

'00

1 80

,/

:..-

80

·40
20

o
(1.1

0.3

(l5

3510

10
-(1.1

·3050100

-0.3-o.s-1

Ie (mA). COUECIOR CURRENT

-3 -5

-10

-30 -50

-100

Ie (mA); COLLECTOR CURRENI'

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EIIITTER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITA.NCE

10

LLJH

-tc_1018-

le-,O

.....
~
Vce(oaI) __

.3

10

--

30 . 50

Ie (mAl. COUECIOR CURRENT

c8 SAMSU~

"

.....

SEMICONDUCTOR

.....
~.

100

,

1

10

30

50

100

Vea (V). COLLECIOII-BASE'IIOLTAGE

118

NPN EPITAXIAL SILICON TRANSISTOR .

KSC388

TV FINAL PICTURE IF AMPLIFIER APPLICATIONS
TO·92

• Gpe =33dB (l)tp) (f=45MHz)

ABSOLUTE MAX1MUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VESo
Ic
Pc
Tj
Tstg

30
25
4
50
300
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

1. Emitter 2. Base 3. Collector

I

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
ColleCtor-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output CapaCitance
Collector-Base Time Constant

VCE (sat)
VaE (sat)
Cob
CC'rbb'

Current Gain-Bandwidth Product
Power Gain

Gpe

c8

BVCBO
BVcEO
Icao
lEBO

hFE

h

SAMSUNG SEMICO.NDUCTOR

Test Conditions
Ic=10pA,IE=0
Ic=5mA,la=0
Vca=3OV,IE=O
VEa='.JII,lc=O
VCE = 12.5V, Ic =12.5mA
Ic=15mA,la=1.5mA
Ic=15mA,la=1.5mA
Vca=1OV,IE=O, f=1MHz
Vca=1OV,IE",-1mA
f=30MHz
Vee = 12.5V, Ic =12.5mA
Vee =12.5V, f=45MHz
IE=-12.5mA

Min

l'tp

Max

30
25
20

0.8

300
28

0.1
0.1
200
0.2
1.5 .
2
25

36

Unit
V
V
pA
pA
V
V
pF
ps
MHz
dB

119

KSC388

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE-EMITTER ON VOLTAGE,

6
I

4

I-

12

u

10

I

I

IB-so,A

1e-5O,.A

if
8

1e.40""

,/

V

o

12

'. 16I

i50~~I~~§~I~~§~!~~

I:~g~~.~~

8 5.0~

IB .. ao,.A

1,2,0 \---1---1--++-,1---1----"

1£_20""

~ ~~~~!!~~~.

le_l0""

o

Vcs_fN

1e-70""

f
V

o,21--+--I--+f--I--+-~

O'IL-_-L____L-__-LL-__L-__- L__~

20

,0,1

24

0,2,

.

-

0.6

1,2

1,0

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN

500

0,4

V.. (V).IIASE-EMITTER VOLTAGE

VCE (V). COLLECIOR·EMmER VOLTAGE

f---

VCE-12.5V

le-101B

~200

j50

Iil

(

'OO

r-

8

,/

20

10

0Jl1
0,1

0.3

0,5

10

20.

~,1

50,100

G.3

I/: (mA). COLLECII)R CURRENT

0.5

1.

10

30

Ie (mA). COLLECIOR CURRENT

:~gg::,~:u~~~CE

CURRENT GAlN-BANDWlDTH PRODUCT
I

-

VCE_125Y
,/

.......
-

f... 1MHz

,

ib

.1£.0

..............

//
1

10
0,1

0.3 0.5
,

c8

Ie (noM.

510'20

COLLECIOR CUMENT

50

SAMSUNG SEMICONDUCTOR

0, 1
0,1

0.3 0.5

3

5

10

3050

120

KSC815

NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER
HIGH FREQUENCY OSCILLATOR

TO-92

• Complement to KSA539
• Collector-Base Voltage Vcao=60V

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector DiSSipation
Junction Temperature
Storage Temperature

VCBO
Vceo
VeBO
Ic
Pc
Tj
Tstg

Rating.

Unit

60

V
V
V
mA
mW
°C
°C

45
5
200

400
150
-55-150

1. Emitter 2. Base 3. Collecfor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base BreakdOwn Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

Symbol

Test Conctitions

BVcBO
. BVceo
BVeBO
Icao
lEBO
hFe
Vae (on)
Vce (sat)
Vae (sat)

Ic=100pA,I£=0
Ic=10mA, la=O
le=-10pA,lc=0
Vca=45V,le=0
Vea=3V,lc=O
Vce=1V,lc=50mA
V ce =10V,lc=10mA
Ic =150mA, la =15mA
Ic=150mA,la=15mA
Vce=lOV,lc=10mA
Vca =10V, Ie =0
f=lMHz

h
Cob

Min

Typ

Max

60
45
5

40
0.6

100

0.65
0.15
0.8.3
200
4

0.1
0.1
400
0.9
0.4
1.1

Unit
V
V
V
p.A

p.A
V
V
V
MHz
pF

hFE CLASSIFICATION
Classification

R

0

Y

G

hFe

40-80

70-140

120-240

200-400

. ciS SAMSUNG SEMICONDUCTOR

121

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARA(:1'ERlSTIC
100

,.."...

-.. 18

90

BASE-EMITTER ON VPLTAGE
100

Jaso,J

60

·~tJ-,
I

L--

30

-

-Vee_1

~J~

~J~_

I

II

~_11!1OpAr-

18-)00,.0

20

. ~+~

10

o
0510

16

20

25

30

35

r-

Io.e

0.1

o

..0,4660

0.2

Q.4

o.e

1D

1.2

V. 00, IIAS&EIIJTTER VOLTAGE

V.. (V), COUJ!CIOII.mIITTEtI VOLTAGE

CURRENT GAIN-IIANDWIDTH PRODUCT

DC CURRENT GAIN
1000

I-----

i:

_1

¥

CE-1OV

I_
~

~r-

/

I:(

i"""-

110

30

l:
10

10
3

10

5

30 110

100

,10

300 600 1000

Ie (noAJ, COI.LIiCIOR_

30

Ie (mAl, coLi.EClDR CURRENT

BASE-EMITTER SATURATION IIOLTAaE
COLLECIOR-EIIITTER SATURATION VOLTAGE
10

COLLECIOR OUTPUT CAPACITANCE
20

M~H

~ 1e-101B

IE-O

-

10

1

-

......

VIE (III)

....... f-..,.
L

1

V
I

VCE(III)

Q01

1

3

5

10

30 60

100

Ie (IlIA), COLIJ!CIOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

300

1
1

I

I

I
3

5

10

30

60

100

300

Veo (V), COLLEC:IOIWIAIIE VOLTAGE

122

NPN EPITAXIAL SILICON TRANSISTOR

KSC838

FM RADIO RF AMp, MIX, CONY, OSc, IF AMP
• High Current Gain Bandwidth Product fT =250MHz (1\tp)

10-92

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcso
VCEO
Veso
' Ic
Pc
Tj
Tstg

Rating

Unit

35
30'
4
30
250
150
-55-150

V
V
V
mA
mW
°C

OC

1 Emitter 2. Base 3.- Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdowl) Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base'Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance I

hFE

Symbol

Test Conditions

Min

BVcso
BVceo
BVeso '
leBO
, leso
hFe
Vse(on)
Vce (sat)

Ic =1oopA, Ie =0
Ic =5mA, Is;"O
Ie =-10pA, Ic =0
Vcs=30V,le=0
Ves=4V,lc=0 .
Vce=12V,lc=2mA
Vee =fN, Ic =1mA
Ie =10mA, Is =1mA
Vce=10V, le=1mA
Vcs=10V,le=0
f=1MHz

35
30
4

h
Cob

40
0.65
100

lYP

0.70
0.1
250
2.0

Max

0.1
0.1
240
0.75
0.4
3.2

Unit
V
V
V
p.A
p.A
V
V
MHz
pF

CLASSIFICATION

Classification

R

0

y

hFe

40-80

70-140

120-240

c8

SAMSUNG SEMICONQUCTOR

12,3

KSC838

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

I

I

BASE-EMITTER ON VOLTAGE

+-_

1'0.90.,.

, __

28

Io-BOpA

-I-

-vL..

111-10.,.

I

lo-l~

I
I .
loo4OpAI
10-30.,.I
10_50.,._

.

I

Io°ar-

-

._.

o

~.

1I

1o=1j"'_

.p

o

7

1

9

o.e
va. (VI, BASE-EMITTER IIOLTAOE

o

10

o.e

0.4

Vc:. (y), COLLEcro.....mER VOLTAGE

. DC CURRENT GAIN .

CURRE~T GAIN-BANDWIDTH

1000

1.0

1.2

PRODUCT

1000

-

~

Vee_lOY

=1

;~

/".,.

/

i"'""

_f-

30

10

10
0.1

CI3

1

Q5

3

5

10

30 50

100

10

Q5

30

Ie (mAl, COLLECIOR CURRENT

Ie (mA), COLLECrOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE

10

6

-

1e-101o

_~_1JHz
IE-O

I:

(III

~
;3

V

vae(

.................

2

............

.......

Q.01

0.1

CI3

Q5.

1

3

5

10

Ie (IlIA), COLLECIOII CURRENT

c8

SAMSUNG.SEMICONDUcrOR

30

10

30

50

100

Vea (VI, COLLECIOII-8ASE IIOLTAOE

124

NPN EPITAXIAL SILICON TRANSISTOR

. KSC839

FM/AM RADIO RF AMp, CONY, OSC, IF AMP
TO-92

• Current-Gain-Bandwidth Product h =200MHz

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

Vcao
VCEO
VEao
Ic
Pc
Tj
Tstg

35
30
4
100
250
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

1. Emitter 2. Base 3. Collecfor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off C!,!rrent
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

Symbol

Test Conditions

BVcao
BVcEo
BVEao
ICBO
lEBO
.hFE
Vadon)
Vcdsat)

Ic = 100,..A, IE =0
Ic=5mA,la=0
IE =10,..A, Ic =0
VcB =30V,IE=0
VEa =4V, Ic =0
VCE = 12V, Ic=2mA
VCE=f5\J,lc=1mA
Ic=10mA,la=1mA
VcE =10V, Ic=1mA
Vca =10V,IE=0
f=1MHz

iT
Cob

Min

Typ

Max

35

V
V
V

30
4

40
0.65
80

Unit

0.70
0.1
200
2.0

0.1
0.1
400
0.75
0.4

p.A
p.A
V
V

MHz
3.5

pF

hFE CLASSIFICATION
Classification

R

0

y.

G

hFE

40-80

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUCTOR

•

125

•

,NPN 'EPrTAXIAL SILICON TRANSISToR
STATIC CltAFIACI'ERISTIC

DC CURRENT GAIN

10

B_~_

1000

I
I
.lB-7OI

' .. 10Hz

I~

&

1\.1\

lf""-.,..

---

,I""--.

J.

........
.1 LO-D,-LO..l.D3..1.0-'-.OS"""'0"'-.'-L-0-'-.3-'-0.L.sU-W"---'-'':'"3"":-5~'O

0.

......t'

,
am

0.03

(l()5

'0.1

0.3 0.5

3

5

10

ie (rnA), COLLECfOR CURRENT

Ie (mA), COLLECTOR CURRENT

NOISE FIGURE
'00

-jVCE _5V

50
30

~

~~

&1'\

0"'-

1Hz

'f

rfJ&~~~

5
3

~

..

II:

........

,I'0.5
.3

"1-

.1
001

003 005

0.1

03 0.5

3

5

10

Ie (mA) COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR
.

.

131

NPN EPITAXIAL SILICON TRANSISTOR'

'."

FM CONVERTER, OSCilLATOR
HIGH FREQUENCY AMPLIFIER

TO-92

• High Current Gain Bandwidth Product fT =250MHz (lYp)

ABSOLUTE MAXIMUM RATINGS (Ta,=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

' Rating

Unit

35

' VCBO
VCEO
VEeo
Ie
Pc
Tj
Tstg

V
V
V
mA
mW
°C

30
4
100
200
150
-55-150

OC
1. Emitter 2. Base 3. Collector

,ELECTRICAL CHARACTERISTICS (T.=25°C)
Characteristic

Symbol

, COllector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth'Product
Output Capacitance
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Time Constant

hFE

BVceo
BVCEO
BVEeo
Iceo
lEBO

f~
Cob
hFE
VCE (sat)
Cc'rbb'

Test Conditions
Ic=100pA,IE=0
Ic=10mA, le=O
IE = -10pA, Ic =0
Vce =20V, IE =0
VEe =3V, Ic =0
VCE =10V, Ic =1mA
Vce =10V, IE =0
f=1MHz '
VCE =1OV, Ic =2mA
Ic =10mA, Ie =1mA
Vce=10V,IE=-1mA
f=31.9MHz

Min

~p

Max

35
30
4
,0.1
0.1
100

250
2.0

40
50

Unit
V
V
V'
pA
pA
MHz

3.5

pF

240
0.6

V

75'

ps

CLASSIFICATION

Classification

R

0

y

hFE

40-80

70-140

120-240

c8

SAMSUNG SEMICONDUCTOR

132

KSC921

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE·EMITTER ON VOLTAGE

.

10

2

I
28

I!··,ocr

VCE-W

I•• ~

1-

I••ao,.t.
I••

~-

I

1•• 60",-

I

~

la_50,.1\
I ~--

--

10·
I••

I.~

!

1II·,or

,

- - - I----- I

~

J

--

-

'I
0.2

10

o.e

0.4

o.e

DC CURRENT GAIN

•

CURRENT GAIN·BANDWIDTH PRODUCT
1000

1000

Jd."OV

VCE_1OV

500

,-r-

300

-I-

~

i-'

10

10
10

0.5

30

10.

0..5

Ie (mA). COLLEctOR CURRENT

-

COLLECTOR OUTPUT CAPACITANCE

I
I

r-- --1=1MHz
IE_(

1c_1dl,

I
'~ ~

1

I

i
!

-tae sat

I" I'
E= E

30

Ie (rnA), COLLECTOR CURRENT

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
-

10

J

No-

/

VeE satJ

I

1

I

I---.

I

r--.
I

CD1

1

0.1

0.30..5

35

10

Ie (mAl, COLLECTOR CURRENT

C8

1.2

1D

Vae M,USE-EMITTER VOLTAGE

Ie (mAl, COLLECIOR CURRENT

SAMSUNG SEMICONDUCTOR

30

10

I
I

!I

30

50

~i=
i

.

100

Ve. M, CQl.LECI'OR-BASE VOLTAGE

133.

KSC945/

'NPN EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC. .

TO-92

• Complement to KSA733
• Collector-Base Voltage Vcao=60V
• High Current Gain Bandwidth Product fr =300MHz (Typ)

=

. ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Rating

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

60

VeBO
VeEO
VEBO
Ie
Pc
Tj
Tstg

50
5
150
250
150
-55-150

Unit
V
V'
V
mA
mW
°C
°C

1. Emitter 2. Base 3. Collecfor

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Test Conditions

BVcBo
BVcEo
BVEBo
ICBO
lEBO
hFE
VCE (sat)

Ic =100pA, IE =0 .
Ic =10mA, IB =0
IE=-10pA,lc =0
Vce =40V,IE=0
VEB =3V, Ic =0
VCE=6V,lc=1.0mA
Ic=100mA,IB=10mA
V CE=6V, Ic=10mA
Vce =6V,IE=0
f",1MHz
VcE =6V,IE=-O.5mA
f=1KHz, Rs =5000

Collector-Base Breakdown Voltage
Coliector:Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter SaturatioF;l Voltage
Current-Gain-Bandwidth Product

IT

Output Capacitance

Cob

Noise Figure

NF

hFE

Min

Typ

Max

Unit

60

V

50
5

,V

70
0.15
300

0.1
0.1
700
0.3

V
pA
pA
V
MHz

2.5

pF

4.0

dB

CLASSIFICATION

Classification

0

y

G

L

hFE

70-140

120-240

200-400

350-700

c8

SAMSUNG SEMICONDUCTOR

1.34

KSC945

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

TRANSFER CHARACTERISTIC

100

110

100

--

l

.la-4OO,oA
"
Ie _ _

./

/.V

-

I.~ i-"""

30

rlv

la_l!5OjoA

I

i._~

.·I.-l~ t--

V~

I

I

r/~
.20

,

1-

lo-aoo,.A

-

r- r- VeE - 8V

I

la-l00,.A t--

:,-

-i-

t-- -

t--

IB_5OpA

!
•

8.

12

18

0.1

20

0.2

0.4

o.e

o.e

1.0

Vcr CV), COlLECJOll.EMn'TER IIOLTAIIE

Vie (V),lIA8E-E111mER IIOLT_

DC CURRENT GAIN

CURREt

u

BASE.EMITTER ON VOLTAGE
1000

r---

/"l-

BO

~ V/
50

~

i
i.

40

30

.I!

V
V

la .. o.2mA

-

Vee,.

ffi
1100

il
~

50

~

30

1

'0

I

.I!

20
10

10

0.2

0.4

0.6

DB

lD

1.2

VeE (V), BA$E·EMITTEA VOLTAGE

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
1000
500
300

10

I--

Vce .. 5

..~

3

~

,

. r--- 1-'e=lOl

g
"\

0

VSE(SaI)

!;;
a:

:> D.5

~~

0.3

~

I

~

>

Ve.(sat)"

0.1

V

IOD5
10.03

>,

I

1

3

5

10

I

I

0.01

30 50

100

300500

Ie (mAl, COLLECTOR CURRENT

1000

3

5

10

30 50

100

300 500 1000

Ie (mA), COLLECTOR CURRENT

COLLECTOR OUTPUT CAPACITANCE

2

~!
=ntz
le .. O

10

'\.

l'...

r-....
2

!
10

30

50

100

Vee (V), COLLECTOR-SASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

139

KSC1070(1)/1070 (2) NPN EPITAXIAL SILICON TAANSISI"OR
UHF TV TUNER RF AMPLIFIERLIFIER, MIXER
DISK TR

DISK MOLD
HIGH PG, LOW NF (PG: 18dB, NF: 2.8dB, @900MHz)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
CoIlector·Base Voltage
Collector·Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol
Vcao
Vceo
Veeo
Ic
Pc
Tj
Tstg

Rating.

Unit

30.
25
3.0.
20. .
20.0.
150.
-55-150.

V
V
V.
mA
mW
·C
·C
1 Emitter 2

Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
CoI~tor Cutoff Current

DC Current Gain
Current Gain·Bandwidth Product
Output CapaCitance
Noise Figure
Power Gain
AGC Current: Only

Symbol
ICBO
hFE

it
Cob
NF
PG

to Cl 0.70. (1)

IAGe

Test ·Condltlon
Vcs=25V, le=G
VCE=lo.V,lc=3mA
Vce=lo.V, le=-3mA
f=lMHz, Vcs=lDV, le=Q
Vcs=lo.V,le'O'-3mA
f=9o.DMHz
Vcs=lDV,IE:=-3mA
f=9DDMHz
IE of PG -3GdB
f=9DOMHz

Min

40.

750.

14 .
-S

Typ

So.
10.0.0.

Max

Unit

0..1
20.0.

IlA

0..55

o..S

2.S

4.0.

1S

MHz
pF
dB
dB

-11

mA

KSC1D7D (1): IAGe Classification P: -9"'-11mA
Q: -S"'-lDmA
KSC1D7D (2): HFE Classification F: 40.",20.0.

c8

SAMSUNG SEMICONDUCTOR

140.

KSC1070 (1)/1070 (2) NPN EPrrAXIAL SILICON TRANSISTOR
h....lc CHARACTERISTIC

le-VCE CHARACTERISTIC

20

1000

18

500

16

..

co

V

200

I-

Z
II:

~

!lu

100

i
l-

II:

e

~

j

0
5

g

0

i

0

~

5

2
1
01

02

0.5

10

20

Ie 10'le

le""'1 O'le

5000

!!J

II

6

1000

::_E

~2000

I

:!2000

OJ

O·
>1000

i

500
200

OJ

0

oJ

20
10
01

0

200

!

50

oJ

50

~- 100

100

!

I

10000

5000

i

100

V.. (sal)-le CHARACTERISTIC

VCE (sal)-le CHARACTERISTIC
10000

>

50

Ic(mA~ COLLECTOR CURRENT

Vce(V), COLLECTOMMITTER VOLTAGE

0
0.2

0.5

10

20

1

50 100

0

0.1

IclmAlo COLLECTOR CURRENT

0.2

0.5

10

20

50

100

Ie (rnA), COLLECTOR CURRENT

"":1. CHARACTERISTIC

Cob-Vea CHARACTI!'RISTIC
V E=1 V

10000,_,,_
gsooo
f2000'r--+-++++H+r--+-t++rH+r--+-r++tH~

i!'

1

o_,,_

'000
• • • •

1
~ 200r--+-r++tHtr--t-rr+H~---+-rrrH+H
;I 500S

i8
l

lO

50

~ 20r--+-r++~tr--t-rr+H+H---+-rrrH+H

105i• • • •
§ 0.2r--+-r++~tr--+-I++HfWr-'--+-r++ttt~

f

Ol

005~
•

•

•

0.021--+-++tttt+t---t-H-tHl-t"Hl--+-+ttttttl

~OL.'---0~.~2~~0.~5~-~1---~2~~-~5~_~'~0---2~0~~-~50~-~'00
IElmA). EMITTER CURRENT

c8

SAMSUNG SEMICONDUCTOR

Vca(~

COLLECTOR-BASE VOLTAGE

141

K$C1Q~O . (1)/1070

.(2)· NPH EPITAXIAL .SILICON TRANS1STOR

Po-To CHARACTERISTIC

IS".I - f CHRACTERISTIC

,.

.5 0

vcr't

T,

300

3.0

I'\.

2.0

l\.
T.

['..

~

1.0

I\.

"' r-.... ~....

0

05

"' '\

I"
o

25

75

50

ToI'C~

L

......

,.LU

------

~
I."".,

.:h

7mA

0.3
0.2

~

100

AMBIENT TEMPERATURE

s",. - f CHRACTERISTIC

"

o. 1

200

100

125

300

1000

500

f(MHz), FREQUENCY

S". - f CHRACTERISTIC
005

t-- Vcs=10V
003

~IP'

.002

0.0

~

,

J
0005

0.003

7mA~

.,...........~

- / ./

.L. .L

"

L

~mAL

l/--r

000

'DO

200

300

500

'000

f(MHz), FREQUENCY

,

S,,-I, Sorf

f(MHz). FREQUENCY

L

S". - I CHRACTERlSTIC

120
• Vcs=1OV '

100

•

80

ob

I·

I

y
V'[=

4
300MHz

5~~"

1"-0..

~-

~7mA~

\~

fl,jM+

(}

~OOMlz

300MHZ\~'OMHz

3mA

40

20

ISOOMHZ

'"'

900MHz
.

700~HZ

H---

100

Vcs'"" 1DV r -

I

!-300MH~

1

- 20

40

II

E=- rnA

A

3

-~

2

~

,

(..

--

"

100jHz

'_0
gob(mS~

COND_UCTANCE

Vcc=10V
f=900MHz

J

1/\

5

\.

r-- i"""

.)

470PFI~

r'\

\

NF

5

a

2_0

N

0

a

I

MHZ

900 MHz PG, NF TEST CIRCUIT

a

l.- I"..

1

5_

I#- J.OOMHZ
I
i:='

gtb(mII), CONDUCTANCE

5

7QOMHz

V/

20

Gpb-IE, NF-I. CHRACTERISTIC

-5mA
- mA

~~900MHZ

~

900MHz

eo

-80

t--

02

D-4

5

'OOMHz.......

V

grb(mS), CONDUCTANCE

yIb=gtb+jbtb
Vca-10V- C-

\ ..... .....

L

-

ytb-f CHRACTERISTIC

~~

.1

7m A
-5mA::" IE=-3mA

glll(mII), CONDUCTANCE

'0o

,t-

"11)

~
J:< V

900MH¥'

-0 e

}'lb-gb .... jblb

80

I

-0. 4

vcr'iv

60

1 -'"

500MHzl

-0_ 8

-'00

40

,60MHJr::

-0_ 2

100MHz

I"

20

'- y,~=gml"""
VeB -10V

- - - c--,!=JmA

-, a
-,

1000pF ~
-VEE

\

:\

5

-2

-4

-6

-8

-10

L: 25x5xO.5 mm
-12

le(mA~ EMITTER CURRENT

c8

SAMSUNG SEMICONDUCTOR.

143

NPN EPITAXIAL SILICON TRANSISTOR

KSC1072

LOW FREQUENCY POWER AMPLIFIER
TO-92

• Complement to KSA707
• Collector-Base Voltage Vcao=60V
• Collector Dissipation Pc =800mW

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VeBO
Ic
Pc
Tj
Tstg

60
45
5
700
800
150 "
-55-150

V
V
V
mA

Collector-Base Voltage
C.ollector-Emitter Voltage
Emitter-Ba$e Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

mW~

°C
°C
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance

hFE

Symbol

Test Conditions

Min

BVCBO
BVceo
BVeBO
ICBO
leBO
hFe
Vce (sat)
V8e (sat)
Cob

.Ic =1oopA, Ie =0
Ic=10mA, 18=0
Ie = -100pA, Ic =0
Vca=4OV,le=O
Ve8 =3II,lc=0
Vce='ZII, Ic~50mA
Ic =0.5A, 18 =50mA
Ic =0.5A,18=50mA
Vc8 =1OV,le=O
f=1MHz

60
45
5

~p

40
0.7

0.24
0.89
12

Max

0.1
0.1
240
0.4
1.1

Unit
V
V
V
pA
pA
'V
'V
pF

CLASSIFICATION

Classification

R

0

Y

hFE

40-80

70-140

120-240

c8SAMSUNG SEMICONDUCTOR

144

NPN EPITAXIAL SILICON TRANSISTOR

KSC1072

ElASE-EMmER ON VOLTAGE

STAnc CHARACTERISTIC

--- ./

..,., r'" .../

If'"

1

360

If'"

1000

IB_1.8mA

lle_1L

~

~15O
li

500
300

I
I I
1e-1.0lnA

-

-vco_w

,

--- ---'''-r
ie_UlnA

~
~

1= r-

i

I

1B_1.8mA

I

I

I

-:-- ~

I

IB!Q8mA

+-+-

100

r-'

IB-o.jmA r -

50

5101520

25

30

36

40

G.2

4550

0.4
_

, V"" (V). c:oLLECJ'OR.EIImER lIOLT_

1.0

Q.6

1.2

(V), MSE-EMITTEA 1IOLTAOE

BASE-EMITTER SATURATION VOLTAGE
COLLECfOR..EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
10

-

VeE_

I--

Ic_101B

VBE(

~

00

ee(

50
30

10
3

5

10

30 50

100

300 500 1000

Ie (mA~ coLLECI'IiR CUARENT

3

5

10

30 50

100

300 500

Ie (mA), COLLEc:roR CURRENT

CoLLECTOR OUTPUT CAPACITANCE

~

f.1MH
IE_O

~1oo
j!!

~

50
~ 30

i

8 10

'""-

I

1

3

5

10

30 50

100

Veo (V). COLLECIOA._1IOf,1lU3E

ciS

SAMSUNG SEMICONDUCTOR

145

KSC1187

NPN EPITAXIAL SILICON TRANSISTOR

TV 1ST, 2ND PICTURE IF AMPLIFIER
(FORWARD. AGC)

TO-92

• High Current Gain Bandwidth· Product fT =700MHz
• High Power Gain Gpe=24dB flYp) at 45MHz

.ABSOLUTE MAXIMUM RATINGS (Til =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base VoHage
Collector Current
Collector Dissipation
Junction ~emperature
Storage Temperature

Vcso
Vceo
Veeo
Ie
Pe
Tj
Tstg

, Rating

Unit

30
·20
4
30
250

V
V
V
mA
mW

150
-55-150

OC
°C
1. Emitter 2. Base 3 .. Colleclor

ELECTRI~L

CHARACTERISTICS (Ta =25°C)

Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain-Bandwidth Product
Reverse Transfer Capacitance

BVcao
BVcEO
BVeeo
Iceo
hFE

Power Gain

Gpe

AGCVoltage

VNlC

. hFE

h
Cre

Test Conditions
le=10pA,le=0
Ic=5mA, Is=O
le=-10pA,lc=0
Vcs=2OV,le=0
. Vce=lOV,lc=2mA
Vce =10V, Ic:"3mA
Vcs=lOV,le=O
f=lMHz
Vce=lOV,le=-3mA
f=45MHz
G p E=-3OdB
f=45MHz

Min

lYP

Max

V
V
V

30
20
4
40
400

Unit

0.1
240

pA

700

MHz

0.6

pF

20

24

dB

4.4

5.2

6.0

V

CLASSIFICATION

ClassHlcation

R

0

y

hFE

40-80

70-140

120-240

c8

SAMSUNG SEMICONDUCTOR

146

KSC1187

NPN ,EPITAXIAL SILICON TRANSISTOR
STAnc CHARACTERISTIC

DC CURRENT GAIN

ro

~

I..,k. .

500
300

~ ..... '. ·:':'80....

.......

~% V

~ %: 8::: ~
~ ~ ~ ~~ -:-

,s";1D,.A

1•• 80....-r--

i"""

I"

I
1••so,.A,_
I,••.00....
I _

I..J. . _
I..J. . _
I··'r-

8

4

~

f--

VCE_10V'

100

I:

1\

Ii

'!

10

1

10

0.1

V.. (V), COLLECIOfI.EMlnER VOLTAQE

0.3

o.s

3

5

10

.30 50

100

Ie (mAl, COLLECIOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTDR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT

I

10

J.W

-

IC-lOla

BE

./

sat)

/

/

/

VCE!~

om

100
0.1

10

Q.3

30

0.G1

0.03 QD5

0.1

0.3

o.s

1

10'

Ie (mA), COLLECTOR CURRENT

Ie (mA), COLLECTOR CURRENT

REVERSE CAPACITANCE

fLU
IE-1)

-I--

r--.. '

0.1
3

5
10
30 50
100
Vea (V), COLLa:TOIWWIE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

300

147

NPN EPITAXIAL SILICON TRANSISTOR

KSC1188
TV PIF AMPLIFIER

TO-92

• High Current Gain Bandwidth Product f1 =700MHz
• High Power Gain Gpe=25dB at 45MHz (Min)

ABSOLUTE MAXIMUM RATINGS (Ta =25.oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter,Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEo
VESO
Ic
Pc
Tj
Tstg

30
20
4
30
250
150
'-55-150

V
V
V
mA
mW
°C
°C',

1. Base 2. Emitter 3. Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
. Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
EmitterCut-off Current
DC Current Gain
Current Gain-Bandwidth Product
Collector-Emitter Saturation Voltage
Output Capacitance

VCE (sat)
Cob

Power Gain

Gpe

hFE

BVcso
BVcEo
BVEso
Icso'
IEso
hFE

h

Test Conditions

Min

Ic =10pA, IE =0
Ic=5mA,ls=0.
IE = -10pA, Ic =.0
Vcs =2OV, IE =0
VEs =3V,lc =O
VcE =10V,lc=2mA
VCE =10, Ic =3mA
Ic=10mA,ls=1mA
Vcs=10V,IE=0
f=lMHz
Ic=10mA, VCE=6V
f=45MHz, Rs=500

30

lYP

Max

20
4
0.1
0.1
240

40
400

20

700
0.2

24

0.7
1

Unit
V
V
V
pA
pA
MHz
V
pF
dB

CLASSIFICATION

Clas!lification

R

0

y

hFE

40-80

70-140

120-240

c8

SAMSUNG SEMICONDUCTOR

148

KSC1188

.NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE-EMITTER ON VOLTAGE

,

10

le=90"A

9

10

=

1.~BOpA

B

P'CE~1OV .

-- . -

IEw

IB=70pA

--

a:
a:

11a:

le ...eOpA

~

IB_50pA
4

1.~4OpA

3

1.-30pA .

2

1•• 20pA

1

1•• 10pA -

!

OS

JI

0.3

J

0.1

o

10

2

12

14

'16

18

o

20

DC CURRENT GAIN

500

1.0

1.2

CURRENT GAIN-BANDWIDTH PRODUCT
2000

.

VCE=1OV

U.tl·

0.8

\lao M. BASE-EMITTER VOLTAGE

VCE (V), COLLECTOR-EMITTER VOLTAGE

1000

1
0.4

0.2

JJ1·

300

Ll.
/

It"

"

1\
100

10

os

10

0.1

30

D.3

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
1.7

10=101B

3

J

5

10

30

II

t-- +--if~'M~z'
•• o

1S

I
VBE(sat)
1

1

1t:-----

./

--

Vee("')

1

,....

o.7

3

0.5

OD1

0.1

M

~

1

3

5

ro

Ie (mA). COLl.EClOR CURRENT

=8

3

COLLECTOR OUTPUT CAPACITANCE

0

51------

0.5

Ie (mA). COUEClOR CURRENT

1e (mA). COLl.EClOR CURRENT

SAMSUNG SEMICONDUCTOR

30

3510

3050
100
Vea M. COLLECIOII'BASE VOLTAGE

149

K~222"

NPN,EPITAXIAL SILICON TRANSISTOR'

LOW FREQUENCY LOW NOISE AMPLIFIER
TO-92

• Coliector·Base Voltage VCllO =5OV

• Low Noise Level NL=40mV (Max)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

VCBJ:!J
VCEO
VeBJ:!J
Ic
Pc
Tj
Tstg

50
45
5
50

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

,Unit
V

2~0

V
V
:mA
mW

150
-55-150

"C
"C
1 Emitter 2 Base 3. Collector

ELECTRICAL C~ARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Noise Level

hFE

Test Conditions
Ic=loo,.A,le=O
Ic =10mA, la =0
Ie = -10,.A, Ic =0
Vca =5QV, Ie =0
Vea =5V, Ic =0
Vce=3V. Ic=05mA
Ic =20mA, la =2mA
Vce=3V,Ic=05mA
Vce=3V,Ic=lmA
Vce=l2V,le=-O.lmA
Rs=25KIl
Av =8OdB, (f=lKHz)

BVcao
BVceo

BVEBJ:!J
ICBJ:!J
leBJ:!J
hFE
Vce (sat)
Vae (on)
fT
NL

Min

'iYP

Max

50

45
5

120

50

0.1
0.62
100
27

50'
100
1000
0.2
0.7

40

Unit
V
V
V
nA
nA
V
V
,MHz

rrN

CLASSIFICATION

Classification

Y

G

L

,V

hFE

120-240

200-400

350-700

600-1000

,c8

SAMSUNG SEMICONDUCTOR

150

KSC1222

NPN ·EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE·EMITTER ON VOLTAGE·

w

~

1

IB _ _

/

,

50

t-- f-VeE-3V

30

I
1B~20.,A

II

IB-1"",

/'"

1B~1"'"

5

IB-l4,IA

3

10-12>A

IB-lo,.\

I

t

la-"",
la-"",1

Q.5
Q.3

IB-",",
1B-2>A

0

J

0.1
02488101214181820

0.2

VeE (y). COI.LECIOfI..I!IIJTTSI VOLTAGE

1000

Illllli

460

1.2

CURRENT GAIN-BANDWIDTH PRODUCT

DC CURRENT GAIN
500

OA
.0.5
os
1.0
VIlE (V). IlABE-EIIITTEA VOLTAGE

~bi~llv

'---

VcE-3V

-

.1-

0

5

~

3

50
0
0.Q1

1

o.oso.os

0.1

0.30S

1

3

3050 ~

5 10

0.1

5

10

30 50

100

10 (mA). COLLeCIOR CURRENT

. BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

OUTPUT CAPACITANCE

0

I II

5
3

3

Q.3 Q.5

Ie (mA). COLl.ECIOII C U _

I--

Ic-101B

f--- t-!-1MHz
IE_O

1

"'

VIlE (BIll)

...... ""

1

I......
l'

2

........

VeE("')

r-....

1

:1111
0.1

Q.3 Q.5

1

0
3

5

10

30 50

Ie (mA). COLI.ECIOA CUAAENT

ciS SAMSUNG SEMICONDUcrOR

100

. 3 .

100
10
30 50
Yea (y). COLLECIOA-IIASE VOLTAGE

151

KSC1222

NPN EPITAXIAL SILICON TRANSISTOR
NOISE FIGURE

NOISE FIGURE
100

100

50

30

R.ce=6V

1--'.'

z

50

I "'f."

1,\1\

1,\

r-...
1

30

~

r-Vce_

t"--'.,KHZ

I~

l"-

i)

10"'-

"'

1\

,

..........

I

b-- r-

1

f'

o.s

.........

I"'"

o.1
0.01

0,03 0.05

D.3

0.1

o.s

.1

3

1

5

10

Ie (mA). COLLECTOR CUAIIENT

om

0.03

o.os

0.1

0.3

o.s

1

3

5

10

k: (mA). COLLECIOR CURRENT

NOISE FIGURE
100

50

30

~~

10

~

3

I

VCE~b{

~f-1~

~ i-'"

~

f=100H

~

\

"\

5

.~

I .........

~

1

If

0.5

r--

r\

I""-..

--

0.3

.........

0.1

o.G1

0.03 0.05

0.1

0.3

o.s

1

3

5

10

Ie (mA). COLLEC1OR CURRENT

.c8

SAMSUNG SEMICONDUCTOR

152

KSC1330

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE AMPLIFIER
TO-92

• Collector·Ba. . Voltage Vcao =5OV
• Collector Dlealpatlon Pc =400mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VeBO
Ic
Pc
Tj
Tstg

50
40
5
100
400
150
-55-150

V
V
V
mA

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

rrm
DC
°C

1 Emitter 2. Base 3. Collecfor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitte~ On Voltage
Current Gain-Bandwidth Product
10utput Capacitahce

BVcao

BVCEO
BVEBO
ICBO
lEBO
hFE
VCE (sat)
VBE (on)

fr
Cob

Test Conditions
Ic=100pA,le=0
Ic=10mA, IB=O
'E=-10pA,lc=0
Vca=4OV,IE=O

Min

lYP

UnIt

0.1
0.1

V
V
V
pA
pA

50
40
5

VEB=~,lc=O

VCE=6II,lc=1mA
Ic =30mA, IB =3mA
Vce=6II,lc=1.0mA
Vce=6II,lc=10mA
VcB =6II,IE.. 0
f=1MHz

Max

400

70

300

'V
V
MHz

2.5

pF

0.08
0.62

0.50
0.80

hFE CLASSIFICATION
Classification

0

y

G

hFE

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUCTOR

153

•

K8C1330

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

100

. BASE-EMITTER ON VOLTAGE

V,,a • 460I""

100

la_400""

/ . /i"'" ___1e~350.1

80

tL: ~

i/'
II~ ,......
~V

~~

50
30

i""" ~:,._s6o,...
~

f-'-VCE-fN

1/

_la~260joA

r-- r--

la.Jo""

r-

'1

5

3

la-160+- ~

Y'

I.JOO"" r--

V

20

-

I

1

1••6OpA

8

12

18

20

0.1

0.2

VCE M. COLLEeIQA.EMITl IIOI.TAGE

DC CURRENT GAIN
200

OA

OJ!

OJ!

1.0

1.2

".. M.IlA8E-1!101ITTER Il0l.1II1II

CURRENT GAIN-BANDWIDTH PRODUCT

II IIIIII
Vee .fN

-

180

~

~

1

300

.......-

40

:

10

0.1

D.30J!

1

35

10

3050100

0.1

3005001000

3

5

10

30 50

Ie (mAl. COI.LECIOR CURRENT

BASE-EMmER SATURATION VOLTAGE
COLLECTOR-EMmER SATURATION VOLTAGE

COLLECTOR OUTPU:r CAPACITANCE

101

I

1

OJ!

Ie (mAl. COLLECIOR CURRENT

I

8

I-- ric-lOla

I---

3

f.'~H~
IE_O

5

..

I:

100

1

•I'...

VIIE(")

3

t

I6
>
i-

. . . . r-

VCE(sat)

0.1

2

i-

r~

....

1

0
0.1

D.3 D.5

3

10.

30 50

Ie (mA). COLLECIOR CUIIIIENT

c8

SAMSUNG SEMICONDUCTOR

100

10
30
50
100
Veo M. COLLECIOIl-llASE VOLTAGE

154

KSC1393

NPN EPITAXIAL SILICON TRANSISTOR

TV VHF TUNER RF AMPLIFIER
(FORWARD AGC)

T0-92

• High Current Gain Bandwidth Product h = 100M Hz (Typ)
• Low Noise Figure NF=3.odB (Max) at f=2ooMHz
• Low Reverse Transfer Capacitance Cre=o.5pF (Max)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage .
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

30
30
4
20
250
150
-55-150

V
V
V
mA
mW
°C
9C

•

1. Base 2. Emiller 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain-Bandwidth Product
Reverse Transfer Capacitance

BVcBo
BVcEo
BVEBo
ICBO
hFE

fr
Cre

Power Gain

Gpe

AGC Current

IAGC

Noise Figure

NF

hFE

Test Conditions
Ic =10"A, IE =0
Ic =5mA,IB=0
IE = -10"A, Ic =0
VcB =20V,IE=0
VcE =10V,lc=2mA
VcE =10V,lc=3mA
f=lMHz, VCB=10V
IE=O
f = 200MHz, IE = - 3mA
Rs=500, VCE=10V
IE at Gpe=-30dB
f=200MHz
f=200MHz, IE = -3mA
VCE=10V, Rs=500

Min

Typ

Max

30
30
4
40
400

20

0.1
180 .
700
0.35

0.5

24

Unit
V
V
V
"A
MHz
pF
dB

-10

-12

mA

2.0

3.0

dB

CLASSIFICATION

Classification

R

0

Y

hFE

40-80

60-140

90-180

c8

SAMSUNG SEMICONDUCTOR

155

KSC1393

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

DC CURRENT· GAIN

hI-2DD,A I.-'~. ,I,

'0

200

vJ.

IB_180pA

~~V
./ I·-l~!.
1•••2O,oA

Ih %:rv

,,~

/"

~

/'

~

~~
'IV ~

rtJ. V

IJIlO,o,' -

-"""

IB_

o

c--

o"A- r--

\

la-eo,

,

\

1·"I4O,A
1.-f"A

~

o

'!JO

'0

•

3

4

8

D..

10

~.o.5'

3

5

.0

30

Yeo (V), COLLECIOIIoEIIIITTER WLTAIIE

Ie lmA), COUECIOR CURRINT

CURRENT GAIN-BANDWIDTH PRODUCT

BASE-EMITTER SATURATION VOLTAGE
COLLECI'OR-EMITTER SATURATION VOLTAGE

1poocI

'0
_ _ .0\1

r--

) - - 1o.101a

IL
eel

a

. D..

D.3

as

0.D1

-3

5

'0

'30 50

D..

100

D.3

0.5

3

5

REVERSE CAPACITANCE

f-f-·J·

Y8-~+,J.

v~rov t--

Ie 3mA

IE-O

20

'.0

0. 2.

I

---

Ei

30

I~J~t!:::
1~

'00-

mA

I""a;;
-1 OMHz

0
7mA

.50

-2 o

10r:Y

-40

50

100

t-- t-

/200

i

0
10

30

INPUT ADMITTANCE (yle) vs. FREQUENCY
40

i"'-

'0'

leimA), cou.ECIOR CU_

Ie ImA), COUECIOR CURRENT

250

300

-60
2.

40

60

80

'00

g.o(mlll. CONDUCTANCE

c8

SAMSUNG SEMICONDUCTOR

156

KSC1393

NPN EPITAXIAL SILICON TRANSISTOR

REVERSE TRANSFER ADMITTANCE (yre)
vs FREQUENCY

FORWARD TRANSF.ER ADMITTANCE (yle)
¥s. FREQUENCY

YM~g kA

100~

100

~

4

H 2:~l-- _ . I-

3.JA

.I~

150

.

200

r\.
200
6

-2 Or-

~ "-

r-

" "

t--

25°i"'" ~.

-0. 6
li 30

or

150

Or- 300

~

Or-

\-300M~

250\

~c

\

~k

100

Ic=10mA

1=I~MrZ
2bo

K

15(\-

-80

250M"

HZ '

1\. k50l- 200

-100

_0.05

-0.1

0.05

20

-20

0.1

gfe(mO~

gn(mO~ CONDUCTANCE

,.J..;J+~

'-0

2.5 - Vee -l0V

//

/j

250

2.0

300

1.1. / Vi
20°1 V i200 260/
r
'/ ,I
50

1.5

1

1.0

I-100M

~,"Y/

~=.3":A "

!:A

~50

'ioo

2sdL

7r--

~
:>

"Ii:
~
3:

IV

20
15

•

"

,

...::

/

~

3:

0.8

•

~:~~Xi-

Gpo

10

-10

06

100

60

I TLt CiLt
'1:-200MHZ

-15
0

1.0-

II

f~
. . . . 1\..

"-

J
NF

0.4

60

Ope' See

-5

0.2

A

CONDUCTANCE

25

0.5

0

\00

.Y

I

40

It

jlomA

7rnA

~o

:::;, ...... 5i

3~0

,I

V

3m~

POWER GAIN AND NOISE FIGURE
va COLLECTOR CURRENT

OUTPUT ADMITTANCE (yoe) vs. FREQUENCY

I

-i -

I

-0.15

V

7mA

.l,i""'-r-.,!0O
......
300
200
\300'1

-1. 0

.~

yle=gfe+jbfe
VCE=10V-

V

.......

NF, 1=2ooMHz_
Vc'""1QV

As-sao
10
lc(mA~ COLLECTOR CURRENT

goo(m~ CONDUCTANCE

POWER GAIN AND NOISE FIGURE TEST CIRCUIT

250~

l

'f=:2:00MHz
BW=6MHz

V"",V)

RFC

~11
VclV) 10V

c8SAMSUNG SEMICONDUCTOR

157

KSC1394···,'

,; "NPN'EPITAXIAL SILICON TRANSISTOR

TV VHF TUNER 'MiXER
• High Current Gain Bandwil;lth Product fT = 100MHz (lYp)
• High Power Gain Gpe=20dB (l!IIin) at f=200MHz
• Low Noise Figure NF=3.5dB (Max) at f=200MHz

ABSOLUTE:MAXIMUM RATINGS (Ta =25°C)
Symbol

, Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature.
Storage Tempera~ure

V
V
V
mA
mW
°C
°C

30

VCBO
VCEO
VEeo

3b
4
20
250
150
-55-150

Ie
Pc
Tj
Tstg

' ..

Unit

,Rating

1. Base 2, Emitter 3, Collector

~;.. ",',.

'\

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

CollectQr-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current 'Gain-Bandwidth Product
Reverse Transfer Capacitance

BVCBO
BVCEO
BVEeo
ICBO
hFE
VCE(sat)

Power Gain

Gpe

Noise Figure

NF

hFE

h
Cre

Test Conditions
Ic=10pA,IE=0
Ic=5mA,le=0
IE=-10pA,lc =0

Min

lYP

30
30
4

Vc~=20V,IE=0

VCE=10V,I.c=2mA
Ic=:1OmA,le=1mA
VcE =1OV,lc =3mA
Vce=1OV,IE=0
f=1MHz,
VcE =6V,IE=-3mA
Rs =500, f=200MHz
VcE =6V,IE=-3mA
Rs =500, f=200MHz

Max

0.1
180
0.7

40
400

700
0.35

0.5

Unit
V
V
V
pA
V
MHz
pF
dB

20
3.5

dB

CLASSIFICATION

Classification

R

0

Y

hFE

40-80

60-140

90-180

"c8,SAMSUNG SEMICONDUCTOR

158

KSC1394

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

,10

1••

DC CURRENT ~IN
200

:Ioo.A la.'l1O,oAj
1a.1IIO,oA

~J
~~ ~I••1a.12O,oA
I~ ~v V
1• .Joo,A~
r--

,,~

/"

~ ,.....

",..

v- '

1--~I--Ia·T-

r--

Ia.~

~

la~oIO,oA-

V

II

'/

VcEl
100

I

1

\

50

~30

I

la.ao,A

o

10

012345878810
Vco (VI, CIILLEC:IOIMIII _ _

0.1

3

5

10

30

Ie (mA), COLLl!c:lllR_

BASE-EMmER SATURATION VOLTAGE
CDLLECTOHMmER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUcr

i:3000'~"·

0.80.5

I

10

:~.'W

r--

1e.1010

~~4+~~+4~~-~+H~

I~:--

•••

v.

IL

1'00I----+++*f+++----+-++++H+~

Veo l1li)

(::
I:

3510

3050100

Ie (mA), COLLBCIOII CURRENT

,o.ot
0.1

0.8 0.5

• 1

3

5

10

30

'Ie (InA). COLLECIOR CURRENT

REVERSE CAPACITANCE
1.2

t--~.,J...
10.0

1.0

f--por

-0.2

mo a

I"-t--...

i"""'"

0
35103050
Vea (V), COLLEClOlWlASE VOLTME

c8

SAMSUNG SEMICONDUCTOR

159

KSC1395

NPN EPITAXIAL SILICON TRANSISTOR

TV VHF TUNER OSCILLATOR
T0-92

• High Cllrrent-Galn Bandwidth Product fT =600MHz (Min)
• Output Capacitance Cob=1.5pF (Max) .

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
. Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Veso
VeEo
VEBO
Ie
Pc
Tj
Tstg

30
15
4
20
250

V
V
V
mA
mW
°C
°C

150
-55-150

1. Emitter 2. Base 3. Coileclor .

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance

hFE

BVeso

BVeE~

BVEso
leBO
lEBO
hFE
VeE (sat)

h
Cob

Test Conditions
Ie =10pA, IE =0
le=5mA,ls =0
IE=-10pA; le=O
Ves = 12V, IE =0
VEs =3V,le =0
VeE =10V,lc =5mA
le=10mA,ls=lmA
VeE =10V,le=5mA
Ves =lOV, f=lMHz
IE=O

.

lYP

Max

30
15
4·
0.1
0.1
. 240
0.5

40

600

1100
1.5

Unit
V
V
V
pA
V
V
MHz
pF

CLASSIFICATION

Clailsification

R

0

Y

hFE

40-80

70-140

120-240

c8

Min

SAMSUNG SEMICONDUCTOR

160.

KSC1395

NPN EPITAXIAL SILICON TRANSISTOR,
DC~ GAIN

STATIC CHARACTERISTIC

,

~

10

1

-r

'±± t
-

,·-8OoA:
1o-8OoA
I!

'

-

I

,
,

!
1

le-eo,.A
lo-eo,.A

~
--+-, , - f---->----L-L--:- -~
I

i !

:

:

+---

11a_~

J

!

--

!

1e-2O,oA_

i1o-1OoA_
i

I

1 I

o

IiOO

1.-1O,oA ,

1
~H
r--

_'~~~
EEmll-.

i

0,234&178.'0
VOl (VI, COUIICIOfI.aIITWL_

Ie CmAI. CClUECIOII-.rr

CURRENT GAIN-BANDWIDI'H PRODUCT

~ITTEA SATURATION VOLTAGE

IlASE-ElllTTEA SATURATION VOLTAGE

I

10

Vcol

r./

1c-1OI8

I"

"""(III)

.L

l/

1

0.111
G.3

0.1

0.&

3

6

0.1

10

G.3 0.&

1

3510

3050100

Ie (mAo). COLLECI'OR CURRENT

COLLECTOR OUTPUT CAPACITANCE

~!:-I~Hz
IE.O
2D

......... b

I.......... t-..
OA

o
1

c8

~

&

10

30

60

100

SAMSUNG SEMICONDUCTOR

161

KSC150S"

NPN 'NPN EPITAXIAL SILICON'TRANSISTOR

HIGH VOLTAGE TRANSI)TOR '
TO-92

• High Collector·Emitter Voltage' VcEo=300V
• Current Gain Bandwidth Product h =;:40MHz (Min)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
CharaCteristic

Symbol

Rating

Unit

Vcao
Vceo'
Veao
Ic
Pc
Tj
Tstg

300
300
7
100

V
V
V
mA
mW
°C
°C

Coilector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation .'
Junction Temperature
Storage Temperature

700
150
-55-150

I, Emitter 2,

ease i, Colleclor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Gollector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Curfent Gain-Bandwidth Product
Output CapaCitance

, hFE

Test Conditions

Min

BVcao
BVceo
BVeao
Icao
hFE
Vcdsat)

Ic =100pA, Ie =0
Ic=10mA,la=0
le=-10pA,lc=0
Vca =200V, Ie =0
Vce=10V,lc=10mA
Ic=50mA,la=5mA
VCE =30V, Ic =10mA
Vca=50V,le=0
f=lMHz

300

fr
Cob

Typ

Max

~OO

7
100
240
2.0

40
40

80
4

Unit
V
V
V
nA
V
MHz
pF

CLASSIFICATION

Classification

R

hFe

40-80

.ciS

Symbol

.

0

Y

70-140

120-240

SAMSUHG SEMICONDUCToR

162

KSC1506'

NPN EPITAXIAL SILICON TRANSISTOR·
'STATIC CHARACTERISTIC

OCCURRENT GAIN

IB_'~

18

IB_1~
IB_1 o,.A

IB-~i,.A-

m_t"

IB-.G,.A

3Oj---t--t-H-+++++---j-H+-H++1

"TT
I
.IB_

o

o

20

eo

40

Yet! (VI,

80

100

120

140

COlLE~ITTEA

180

180 200

\IOI.TAGE

. Ie ('!'AI, COlLECIOR CU_

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

_.

10

w

5 f---~

g

3

~

~
!c
II:

I

~

I~=O

~ "a1

tao5

----

---

1==

i

I
0.01
3

5

. 10

-

r-.

I
i-I

Vce(sat)

' Iii
30 50

i
100

300500

Ie (mA), COLLEC1'OR CURRENT

SAMSUNG SEMICONDUCTOR

r - --

-- I
I

I i
1000

3

5

10

-

-

=--.

, 0.03

.c8

-

-

~ 0.3

>

(f..,1MHz I

---~1-

--.---

VBE(sat)

~o.s

!

I

20

10

f:=

::>

COLLECTOR OUTPUT CAPACITANCE

30

50

100

300

Yea (VI, COLLECTOR-I!A8E VOLTAGE

163

KSC1i.623

NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
.• Complement to

501-23

~SA812

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
. Junction Temperature
Storage Temperature

. VeBO
VeEo
VEBO
Ie
Pe
Tj
Tstg

Rating

Unit

60
50
5
100

V
V
V
·mA
mW
°C
°C

2()()

150
-55"'150

1. Base 2. Emittec 3. Collector

ELECTRICAL CHARACTERISTICS' (Ta=2S0C)

.

.

Characteristic

Symbol

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance

leBo
lEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)

fr
Cob·

Test Condition
VcB =60V, IE=O
VEB =5V, le=O
VcE =6V, Ic=lmA .
le=100mA,IB=10mA
le=100mA,IB=10mA
Ic= 1mA. VcE =6V
IE= -1 OmA VeE =6V
Ve"=6V, 1.=0
t=lMHz

0

ti~E

90-180

90

200
0.15
0.86
0.62
250
3

0.55

Max

Unit

0.1
01
600'
0.3
·1.0
0.65

I'A
I'A
V
V
V
MHz
pF

Marking

hFECLASSIFICATION
Classlfica,ion

Typ

Min

y

G

L

135-270

200-400

300-600

C 1 0

hFE grade
~--

c8

SAMSUNG SEMICONDUcrOR
.~

.

. 164'

KSC1623

NPN EPITAXIAL SlLlCON TRANSISTOR
STATIC CHARACTERISTIC

TRANSFER CHARACTERISTIC

100

100

J

50

la=350j.lA

30

Ja -400J.lA

1/!o""""'"

80

II: V

l-

I·

II

I......
8
i

~r--

[,V i-"""

80

la=250jAA

I

VV

_

V
,...... r--

40

.s.ll

.

la::: 2OO J-jA

-

.I
la==150jAA

r-

I

la=l ooIAAi-

~~

20

i

',=300.A

'.~50.AI

o

t=

VeE-6V

II

10

I1
.ll

0.5
0.3

0.1

o

12

16

0.2

20

v .. M. COLLECTOR·EMlTTER VOLTAGE

04

0.8

0$

1.0

1.2

VIE M. _-EIiITTER VOLTAGE

DC CURRENT GAIN

CURRENT GAIN·BANDWIDTH PRODUCT
1000

t=

VeE

F=

6V

VeE-6V

V
I"
50
30

10

1

3

5

10

30 50

100

,300,600

1000

1

01

03 0.5

Ie (mAl, COLLECTOR CURRENT

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

t:::::::

5

10

30 50

100

OUTPUT CAPACITANCE

F=

Jc- 101a

r---

F=

3

I, (mAl, COLLECTOR CURRENT

(-lMHz

',.=0

VBE !sat)

V

=

VeE (sat~

10

1

3

1m
5

0.5 _

0.3~

10

30 50

100

0.1
300 500

Ie (mAl, COLLECTOR, CURRENT

c8

SAMSUNG SEMICONDUcr:oR

1000

_

L--L~3u.,5LL.Ll.!10:J-....J.-:3O"-':50,:.u.L,U.00-..L...3OO.L.J.5OO..u..U.'000.u
Ve• (VI. COLLECTOR·BASE VOLTAGE

165

.. NP.N'EPITAXIAL SILICON TRANSISTQ~
TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER,
· MIXER, OSCILLATOR'

10-92

• High Current.Galn-Bandwidth Product fT =600MHz (l\'p)
• High Power Gain Gpe=22dB at f=100MHz .

=

· ABSOLUTE MAXIMUM RATINGS (Ta 25°C) ,(
Characteristic

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector c;:urreni
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
Vceo
Veeo
Ic
Pc
Tj
Tstg

30
20
4
20
250
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
.Symbol

Characteristic

Collector-Base Breakdown Voltage
. Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
. Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance

h
Cob

Collector-Base Time Constant

CC'rbb'

Common Source Noise Figure

NF

Power Gain

Gpe

hFE

·

BVcBo
BVceo
BVeBo
ICBO
leBo
hFe
VBe (on)
Vce (sat)

Test Conditions

Ic =10pA, Ie =0
Ic = 5mA, IB =0
le=-10pA,lc=0
Vce=30V,le=0
Vee=4V,lc=0
Vce =6V; Ic=lmA
Vce=6V,lc=lmA .
Ic=10mA,le=lmA
Vce =6V,l c =lmA
VcB =6V,le=0
f=IMHz
Vce=6V,le=-lmA
f=31.9MHz
Vce=6V,le=-lmA
Rs =500, f=100MHz
.'Vce=6V,l e =-lmA
Rs =500, f=100MHz
(Typ)

l\'p

Max

30
20
4
0.1
0.1
240

40

400

18

0.72
0.1
600
1.2

0.3

Unit

V
V
V
pA
pA
V
V
MHz
pF

12

15

ps

3.0

5.0

dB

22

dB

CLASSIFICATION

Classification

R

0

Y

hFe

40-80

70-140

120-240

c8
".'

Min

.

.

,

.

.

SAMSUNG SEMICONDUCTOR

166

KSC1674

NPN EPITAXIAL SILicON TRANSISTOR
STATIC CHARACTERISTIC

20

BASE-EMITTER ON VOLTAGE

lo~llo"Al

18

IBllocJ

loi
1_
1o.1IO,oA

18

90

J.,J1 I'
II.~-

IB.IIO,oA-

II."\'''''

II.~

IB

5

r-+--+-t---t-+--+--t++-t-+--+-+--1

3r-~~~-+-+-H~~~~t-i

L_ _

11.-

I

IBro"A

o

o.l~~~~~~WU~~~~~~

o

2

4

o

8101214181820

0.2G.4

o.ao.a

lD

1.2

VBe(VI. _ITlERVOL_

V.. (VI. COLLECIOII-EIIITlER WlLTAIIE

DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT

I

10000

1000
~

500

·IN

~vce.

300

I

1

100

8

50

1 30
0

u.s

3510

30

10

Ie (lIlA), COLLECIOR CURIENT

BASE-EMITTER SATURATION VOLTAGE
COLECfOR-EMITTER SATURATION VOLTAGE
1.7
1e·1018
1.5
1

VBE (sat)

./
1

100

1

I

r--- l.l~.J
IE-O

""

l' ,...
t-.....

r-

YCE(sat)

..-

0.1

.c8

50

COLLECfOR. 9UTPUT CAPACITANCE

10

f---

30

Ie (mAl. COLLECIOR CURRENT

SAMSUNG SEMICONDUCTOR

-

0.7

30

167

KS.c1674

NPN.'EPITAXIAL SILICON TRANSISTOR
INPUT ADMITTANCE (ylo)

FORWARD TRANSFER ADMITTANCE (ylo)

. VI' COLLECTOR CURRENT

VI. COLLECTOR CURRENT

100
Vce=6V

50

500

20

300

100 MHz

~~ 100
. g5

~~.

e~S
C

8~

U

II

10'MH,

~~

".;

10

10.7 MHz

'/
,

05

--

!i!g
8il

50

1616

20

E E

n

g.
02

10

0.1

'Hz

101

~

./

5.

005
0.02

--

2

001
01 02

05

10

20

50

1
0.1

100

0.2

II~b.7M~' II
100 MHz
III

-b~

5

10

21

50

100

OUTPUT ADMITTANCE (yae)
VI. 'COLLECTOR CURRENT

REVERSE TRANSFER ADMITTANCE (yre) .

-~~I

2

lc(mA), COLLECTOR CURRENT

vs. COLLECTOR CURRENT

I_~~I

1

05

COLLECTOR CURRENT

lc(mA~

-

......

r-- boo

VCE=6V

100 MHz.-----:

VeE -6V

05

107 MHz

,od ~ H,goo II..

1

900

2

II
ITr

4
-~

100 MHz

I

o. 5
0.1

02

I

I

05

11111
10

lc(mA~

- j

0.02

I IIIII

20

50

0.0 1

100

0.1 0.2

VS,

10

0.5

20

50

100

COLLECTOR CURRENT

1c(",A~

COUECTOR CURRENT

INPUT ADMITTANCE (yib)

1I

H,

10.7

boo

1

FORWARD TRANSFER ADMlTT ANCE (yfb)

COLLECTOR OURRENT

VI. COLLECTOR CURRENT

1000

vcs""e .0 V

1000'.
500

500

.

.
_ VCB=e.o V

,~.71 MH,

oj;t

~Mbz

Ww

Uu
~~

~'00 MH

ti!;:
!i!g

9"

";'1
I

.

5

10,7

200
100'

MHz

_'00IM~zl

-gil>

:Ow

50

,bib.

8iil

10.7.MHz

If
.. I

-

10.7 MHz

glb

,

20t

/

10.

i.~

5'

j

2

1
01

/
0.2

0.5

....

10

20

50

lc(mA), COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

100

.1
0.1

02

0.5

'1'

lc(mA~

.-

10

20

50

100

COLLECTOR CURRENT,

168

NPN EPITAXIAL SILICON TRANSISTOR

KSC1674

REVERSE TRANSFER ADMITTANCE (yrb)
vs COLLECTOR CURRENT
V~=60V

5

10

III
I~ ....

100 MHz

---

.l! ,~

,

2

I
I I
, ,,
I
I

1

10rr

-g."

~ ....

002

: I

-

rffi1~ rm

ff,

lc-l0mA

n
h

"

MH~:

veE-e.O V

1

0,5

,I,
10 7

mlE!m;
REVERS TRANSFER ADMITTANCE (yre)
va. FREQUENCY

1

'if

n

-...

--,

-

-

7

,.,

02

/-...

0.1
0.05

'0

002

,

00 1
0.1 0.2

0.5

IelmAI. COLLECToR

10

20

50

001

100

10

50

20

100

200

500

1000

QMHz), FREQUENCY

CURRENT

FORWARD TRANSFER ADMITTANCE (yle)
va. FREQUENCY

OUTPUT ADMITANCE (yae)

YS.

FREQUENCY

1000~~g
VCE=6 V
~1~

500

~

200~--~-+-+~~H+----~-+-+~~~

rlw

U1°O!II• • h
n
1°mlma

Iw

8~

'i!if

Ii

~~

~~

t;~

t;~

50

bO,

05

gl.

2o1-----+--I-++++++I----+-++-+-++-1-H
-bfe ,,~'

,,~0--~2~0~~~~~0~U,~00~--~20~0~~5-00~~,UJOOO

.- .-

0.1

'----- C-'

0.05

I

e----~,

0.2

002
0.01

.,.

i--

-

:/

./

10

20

50

QMHz). FREQUENCY

24

0

20

5!

II!

16

"~20

~

12

i2,

100

200

500

1000

QMHz). FREQUENCY

INPUT ADMITTANCE (yle)
va. FREQUENCY

POWER GAIN AND NOISE FIGURE
vs EMITTER CURRENT

1~~l6 v.J.

'=100 MHz

100

~~7~'

a
0

aii:

f
z

I

Gpo .....
0

5
5

0

1

..... 1"-

-- --

./

/

,

NF

i

I

a
-0051-01

.-

'"

.-

o. 51L==1---

5

-0.3

o. 1
-1

lo(mA~ EM~

c8

-

2

-3

-10

CURREI

SAMSUNG SEMICONDUCTOR

20

50

100

200

600

1000

.MHz), FREQUENCY

169

NPN· EPITAXIAL SILICON TRANSISTOR.

100MHz Gpe, NF TEST CIRCUIT
40F

r-r--~---r---t I----j(o) OUTPUT

500

v"

c8SAMSUNG'SEMICONDUCTOR

170

KSC1675

NPN EPITAXIAL SILICON TRANSISTOR

FM/AM RF AMp, MIX, CONY, OSC, IF
TO-92

• Collector-Base Voltage VCEO = 30V
.• High Current Gain Bandwidth Product fT =300MHz (lYp)
• Low Collector Capacitance Cob: 2.0PF (Typ)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
C'harecteristlc

Symbol

Rating

Unit

Vceo
VCEO
VEeo
Ic
Pc
Tj
Tstg

50
30
5
50
250
150
-55-150

V
V
mA
mW
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

V

DC

I

1. Emitter 2. Base' 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

-

hFE

Symbol

Test Conditions

Min

BVceo
BVcEo
BVEeo
leBO
lEBO
hFE
VeE (on)
VCE (sat)

Ic=10pA,IE=0
Ic =5mA, Ie =0
IE =10pA, Ic =0
Vce =50V, IE =0.
VEe =5V, Ic =0
VCE=6V,lc=lmA
VCE=6V,lc=lmA
Ic=10mA,le=lmA
VcE =6V,lc=lmA
f=lMHz, Vce=6V

50
30
5

h
Cob

lYP

40
0.67
0.08
300
2.0

. 150

Max

0.1
0.1
240
0.75
0.3
2.5

Unit
V
V
V
pA
pA
V
V
MHz
.PF

CLASSIFICATION

Classification

R

0

Y

hFE

40-80

70-140

120-240

.r-

•

c8

SAMSUNG SEMICONDUCTOR

171

,KSC1675

NPN· EPITAXIAL SILICON TRANSISTOR
STATIC CHARACI'ERISTIC

BASE·EMITTER ON VOLTAGE

,

16

14

-v

lo.70pA

f

_IN

lo=60pA

V

150
lo-60pA

. /""

lo.40pA

::>
U
0: 20

gw 10

~5J)

lo=30pA

t2.Q

V

f

lo.2OpA

i ' .Q
Il5

1B_10pA

0.2
0.1
12

20

16

0.1

24

0.2

OB

1.0

1.2

v... (1/), COLLEC'IOA-EMITTER IIOLTAGE

v.. (1/), BASE-a1TTER IIOLTAGE

DC CURRENT GAIN

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE
10

10000

1e=1 0 -

500 r- I-Voe.
300

1

Vaet...

l - I--

j./

1

oe

)-

U

II

0.01

10
0.1

3

0.3 Il5

5

30 50

10

0.1

100

10

Cl3 0.5

Ie (mAl, COLLEC'IOR CURRENT

30

Ie (mA), COLLEC'IOR CURRENT

COLLECTOR INPUT CAPACITANCE
COLLECTOR OUTPUT CAPACITANCE

CURRENT GAIN-BANDWIDTH PROOUcr
1000

1

500

0.

1---1-,

300

-

L
1

.V

V

--1'

r- 1-11-1

OIl>

""""r--

..,IV

Cob

50

tOO

i!
j:

,
o.1

10
0.1

o.so.s

. 2

10

20

Ie (mA), COLLECTOR CURRENT

50

0.1

03 0.6

1~

3

5

10

30 50

100

Yea (V). COLLECn)R..BASE VOLTAGE

•

c8

SAMSUNG SEMICONDUCTOR

172

NPN EPITAXIAL
SILICON TRAN'SISTOR
.
.

KSC1730

TV VHF, UHF TUNER OSCILLATOR
TO·92

• High Current Gain Bandwidth Product fr=1100MHz (lYp)
• Output Capacitance Cob=1.5pF (Max)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector· Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Syrnbol

Rating

Unit

VeBo
VCEO
VEBO
Ic
Pc
Tj
Tstg

30
15
5
50
250
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Coliector·Base BreakdOwn Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Cu~rent Gain-Bandwidth Product
Output Capacitance
Collector-Base Time Constant

hFE

Symbol

Test Conditions

BVeBo
BVcEo
BVEBG
ICBO
hFE .
VeE (sat)

Ic =10pA, IE=O
Ie = 5mA, IB =0
IE=-10pA,l c =0
VeB =12V, IE =0
VeE=10V,lc=5.0mA
le=10mA,IB=1mA
VeE=10V,le=5mA
VcB =10V,f=lMHz
IE=O
VcE =10V, f=31.9MHz
IE=-0.5mA

h
Cob
CC'rbb'

Min

• Typ

Max

30
15
5
0.1
240
0.5

40
800

V
V
V
pA

1.5

V
MHz
pF

20

ps

1100

10

Unit

CLASSIFICATION

Classification

R

0

Y

40-80

70-140

120-240

_.

hFE

c8

SAMSUNG SEMICONDUCTOR

173

,.
.KSC1TJO

NPN· EPITAXIAL SILICON .TRANSISTOR
DC CURRENT GAIN

STATIC CHARACTERISTIC
10

K-,k::.

1000

I

-

,

1a-90,.A

500

I
Ia_,[-

300

18~-

.-

V

IB-6O,.A_

I
lJ-so,A_
I
II_~
I
1a-3O,.A_
.
I
1a-2O,.A_
I

r

tr
.,

I

II

•

-1011

I
'100

Ii!

1 50
30

II-lj_

o

o

Ii

10

1

9

10

. 10

05

30

Ie (mA), COLLECIOR CURRENT

BASE-EMmER SATURATION VOLTAGE
.COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAI~BANDWIDTH PRODUCT
2000

10

vJl

I--- 1c.101a

I
L

i::=

= viI

0.1

03 • 05

1

3

5

30

10

0305

Ie (mA), COLLEIlIOR CURRENT

INPUT ADMITTANCE (ylb) vs. FREQUENCY

Y'b~9.+~

I- f= tOOOJHZ

r----:-i-1I,~z
. IE-O

-20

2D

~ ~I

0

I\~

,....
1'::---

0

VCB=10V--=-'

800

~ooo

..

-

,,-

~

/' r--.' N OO
I

~ r--....

N

I

~ N-

........

-80

~

100-1--

~

1"-

, 1"-

1c=30mA

50

t--

I

I '"- 11'"
15

-100

01
10

30

50

100

Yeo (VI, COLLECIOIWIASE 1IOLTAGE

c8

30

3510

Ie (mA). COUECIOA CURRENT

OUTPUT CAPACITANCE·
2A

V

Vee sal)

V

SAMSUNG SEMICONDUCTOR

o

20

40

80

80

100

glb(mD), CONDUCTANCE

.174

KSC1TJO

NPN EPITAXIAL SILICON TRANSISTOR
FORWARD TRANSFER ADMlnANCE (yfb)
v.. FREQUENCY

100

~~

ylb~gIb+lblb

lOt.... , K

0

..........

t~ .......

VCB"'lOV~

.......
r..... "'-

r-.... .....

II

/J

"

15

'/; &.10

10J)OMI;'IZ

Yob=gob+jbob
VC B"",,0

v

400

21 f"J

aDo,"", \ ,

U.

1000

- 20

600

'I

4-

20

- 40

I j

Ii ~"

"-

400

- 60

'IN/-

10

II '/

r-..... ....... 'f... "'f=100MH~
f"". ",-'
~ r~~ ",\
I

-SO

1c=3m~/5

a

---j3'

o

OUTPUT ADMITTANCE (yob) vs. FREQUENCY
10

100

20

, gtb(m2), CONDUCTANCE

g.b(mQ~

CONDUCTANCE

REVERSE TRANSFER ADMlnANCE(yrb)
v.. FREQUENCY

y!.,=g",~"""

-n

200r

-VCB"""0V

400

2

6~O/aoo~

4

1=1000 MHZ/
Ie 15 rnA

-)

/
1(}

I_J -1-

l- t..,
-- ~J
,I
5,0

30

6

a

-1 0
-10

-oa

-06

-04

-0.2

gm(mO), CONDUCTANCE

c8

SAMSUNG SEMICONDUCTOR

175

KSC1845 '

NPN ,EPITAXIAL SILICON TRANSISTOR

AUDIO FREQUENCY LOW NOISE AMPLIFIER
TO-92

•. Complement to KSA992

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
. Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcoo
VCEO
VEoo
Ie
Is
Pc
Tj
Tstg

Rating

Unit

120
120
5
50
10

V
V
V
mA
mA
mW
·C
·C

'i00

150
-55-150

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Icoo
IEoo
hFEl
hFE2
VHt (on)
. VCE (sat)·

Base Emitter On Voltage
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance

fr
Cob

Noise Voltage

Test Condition
Vcs= 120V, IE=O
VEs=5V, Ic=O
VcE =6V, Ic=0.1mA
VCE=6V,lc=1mA
VCE=6V,lc=1mA
Ic=10mA,ls=1mA
VcE =6V,IE=-1mA
Vcs=30V, IE=O
f=1MHz

NV

Min

Typ-

Max
50
50

150
200
0.55
50

580
600
0.59
0.07
110
1.6
25

1200
0.65
0.;3

Unit
nA
nA

2.5

V
V
MHz
pF

40

mV

hFe(2) CLASSIFICATION
Classification

P

hFE(2)

200-400

c8

.1

I

F
300-600

,

E

U

400-800

600-1200

.SAMSUNG SEMICONDUCTOR.

176

KSC1845

NPN· EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

10

STATIC CHARACTERISTIC
10

Is=16,u\

~

le=14,..A

!J

...

~-12uA

~
fA ~

"

U
0:

Ie BJ.tA

V

~

08

~

U

10.4

~

1
li
02

~

.,...,'"

".,
~

~l -

~

1

- 1-

~-1

~

,;-

~

,..-

I.

,., I. 1.4.A

~~

0

le- 4,..A

'/

I'

V

I;

IB!6~ r--

~

/' ~

Z
IU
0:
0:

1._l lOuA

WI

0.8

~

2uA

1-1

.--

--

~

I-"I.-O·i

I-'" 1'-"luA

IB=O.~~

f-- ~l
I---" l IB=O.2~A

f--

1o-2uA

Y'

10

0

I
oj

w

~

50

50

100

Vc.(V), COLLECTOR·EMITTER VOLTAGE

Vc,(V). COLLECTOMMITTER VOLTAGE

•

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
1000

0

J.Vce =6V'

Pulse

900

Ie 10-le

Tes~

Pulse Test

5

800

II

700
1
600

~

500

g

400

I

300

1\

I-

'Vf£ (sat)

5

1\

.

!

200

1
Vee (sat)

0.05

-1003
100
0
001

0.03

0.1

5

030.51

10

0.0 1

305010

0305

lc(mA). COLLECTOR CURRENT

CURRENT GAIN-BANDWIDTH PRODUCT

...

I

3

:E

~=-f~

K
K

I

K
500

300

3r-

,..

--

1""-1"'-

~

V

0
10

8

o.5
o.3

30

10
-0.1

0.3 0.5

1,
l,(mA~

c8

100

COLLECTOR OUTPUT CAPACITANCE

~ 50
::;

30 50

10

Vce=6V
6

I.
~

5

COLLECTOR CURRENT

10

10K

~
~

Z

3
lc(mA~

3

5

10

-

30

- 50

EMITTER CURRENT

SAMSUNG SEMICONDUCTOR

100

o. 1
10

30

50

100

Vcs(V), COLLECTOR.JIASE VOLTAGE

177

KSC1845

;NPNEPITAXIAL SILICON TRANSISTOR
,

,

~'

t

100
50
30

EQUIVALENT INPUT CURRENT NOISE SOURCE
c,-BV
Pulse Test

==
=

~ 100

-2

I

/

a

50 j---VCE-ev
30
r--t.f=IHz

'"
r-~F=10 log [1+ 4~ (
10 EK' 1.38X10"u IJ'~-')
'=T, 273.15+Ta(K)

i!i

1
5

~

/

0.0 1
0.4

fa

O. 1

I'

..-!~'"

I 0.5

0.8

0.7

0.9

0.8

i

0.03

.e

0.0 1

0.01

003005 0.1

5z

Ii

E."'-'Hz
"'
!=NF-10 log 10 [1 + 4~ (

~

u

i!i
!!I

~

~
Ii

'~"&+--

300K
~ lOOK

273.15+ Ta(K)

I
~

50
30
10
5

10l1z

3
1KHz

l00H~

i

.r--..

K~
10

~

~t'-

50K
K
30

"

I'

I......

.

N
~,

K~ f'o;;. ·0
K1,

1

K:S

0.5
0.3

500
30O~

0.,1
0.01

10

11«...

500K

LL'
In-1·RG))

~

i1f

5

'NOISE FIGURE MHP

'K: 1.38X10--21 (J·K·')

oc ~T.

3

1M

~VC,~BV

III

0.3 0.5

IclmA~ COLLECTOR CURRENT

EQUIVALENT INPUT CURRENT NOISE SOURCE

a

\~

1

V"(V), BASE VOLTAGE

~

'"
1n·:a·RGJ]

1:1 0.05

0.03

:"'1' ,-

~

~
.......:: t:::~,

O. 5
0.3

.~

0.05

t~:

10

I:

5
3

1

.

'.

. '

COLLECTOR CURRENT
va BASE-EMITTER VOLTAGE

I

~

I--'

100 ~
0.01
0.030.05 0.1

"~

0.03 0.05 0.1

3

0.30.5

5

10

0.3 0.5

3

5

10

Iclm~ COLLECTOR CURRENT

1e(mA), COLLECTOR CURRENT

POWER DERATING
800
700

'\.
~
"\.

'\
100

o

25

50

75

'\.

100

125

150

175

zOO

T.(·C) AMBIENT TEMPERATURE

c8

SAMSUNG SEMICONDUCTO,R

178

NPN SILICON TRANSISTOR

KSC2001
GENERAL PURPOSE APPLICATIONS
HIGH TOTAL POWER DISIPATION
(PT=600 mW)

T0-92

High hFE and LOW Vedsat)

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

VeBO
VCEO
VEBO
Ie
I.
Pe
Tj
Tstg

Rating

Unit

30
25
5
700
150
600
150
-55"'150

V
V
V
mA
mA
mW
°C
°C

1. Emiller 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic
• Base Emitter Voltage
Collector Cutoff Current
Emitter. Cutoff Current
• DC Current Gain
• Collector Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Output Capacitance
Curent Gain Bandwidth Product

Symbol

Test Condition

Min

Typ

Max

Unit

VeE
leBO
lEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
COb

VCE=6V, le=10mA
VcB =30V, IE=O
VEB =5V, Ic=O
VcE=1V, le=100mA
VCE=1V, le=700mA
Ic=700mA, IB=70mA
Ic=700mA, 1.=70mA
VeB=6V, IE=O, f=1MHz
VcE =6V, IE= 1 OmA

600

640

mV
nA
nA

90
50

200
140
0.2
0.95
13
170

700
100
100
400
0.6
1".2·
25

V
V
pF
MHz

fr

50

• Puls~ test: PW .. 350 I's, duty cycle .. 2% Pulsed

hFE1 CLASSIFICATION
Classification

R'

0

Y

hFE1

90-180

135-270

200-400

c8

SAMSUNG SEMICONDUCTOR

·179

NPNEPITAXIAL .SILICON TRANSISTOR

KSC200212003

AUDIO FREQUENCY AMPLIFIER
.: Complement to KSA953/KSA954

TO-92

ABSOLUTE MAXIMUM RATINGS.(Ta=25°C)
Characteristic

Symbol

: KSC2002

Collector-Base Voltage

Vcoo

, KSC2003
Collector-Emitter Voltage

KSC2002

VCEo

; KSC2003

V~oo

Emitter-Bllse Voltage
Collector Current (DC)
-Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
-. PWs, 1 Oms, Out' Cycle

Ic
Ic
Pc
Tj
Tstg

Rating

Unit

60
80
60
80
5
300
500
600
150
-55"'150

V
V
V
V
V
niA
rnA
mW
°C
°C

1. Emitter 2. Collector 3. Base

~50%

ELECTRICAL CHARACTERISTICS (Ta= 25 °C)
Characteristic

Symbol

Collector Cutoff Current: KSC2002
: KSC2003
Emitter Cutoff Current
• DC Current Gain'
, Base-Emitter On Voltage
.Collector-Emitter Saturation Voltage
• Base Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

Icoo
IEeo
hFE ,'
hFE2
VeE (on)
VCE (sat)
VBE (sat)

fr
Cob

Test Condition
Vcs=60V, IE=O
Vca=80V, IE=O
VEs=5V, Ic=O
VCE'" 1V, Ic=50mA
VcE=2V, Ic=300mA
VcE=6V, 10= 1Om,6,
. Ic=300mA, Is.=30mA
Ic=300mA,le=30mA
VcE =6V,IE=-10mA
Vce=6V, IE=O, f=1MHz

Min

90
30
600

50

Typ

200
80
645
0.15
0.86
140
7

Max

Unit

100
100
100
400

nA
nA
nA

700
0.6
1.2

mV
V
V
MHz
pF

15

- Pulse Test: PWS,350,..s, Duty CycleS,2% Pulsed

hFE

(1) CLASSIFICATION

Classification

0

y

G

hFE(1 )

90-180

135-270

200-400

c8

.SAMSUNG SEMICONDUCTOR

180

NPN EPITAXIAL SILICON TRANSISTOR

KSC200212003

STATIC CHARACTERISTIC
20

~

...

16

Z

II!0:
::>

I - ~1bo;

.....
.....

hi
,-,.'

18=90 A

IB==BOf.lA "

"~
"~

'

0

-.

0

,

.... '\ 1')((\

I
AI
18=20 A

10

,,~'0 AI
~~O I
10

20

W>w,":.'l-,'2. f$<':.P-

~~ V , ~.'"Pc=600 mW
I'V V ~~ ......

0
I,Lo.A I

E
:§

\0

.I. ~~~~i

l,l40~1

"..

~~ 

005
003

VCE(sat)

00 1
0.1

,

0 .. 05 1

10

3050 100

3005001000

lc(mA), COLLECTOR-CURRENT

100
VcE =6 V

~E_l°j;tt

Pulsed'~

0 --

I

1,00
"

H-

If -<
0

!

50

30

I

10

I

I

-

........

I

0

~

-0--- ~.

J

-,

5

f--

03
1

I

3

1

0'5

II

a3 a4 a5

06

07

o.a a 9

10

1 1

V,.(V), BASE-EMITTER VOLTAGE

c8

I

3 5

COLLECTOR OUTPUT CAPACITANCE

300

o

1

.."

III

lc(mA), COLLECTOR-CURRENT

500

8

1

BASE-EMITTER ON VOLTAGE
1000

i

i

I

~

Pulsed

~

01

--

I

SAMSUNG SEMICONDUcToR

1.2

13

1
01

I

~rl
a3

05

3

5

10

30 50

100

V,"V), COLLECTOR-BASE VOLTAGE

181

NPN <'EPITAXIAL SILICON TRANSISTOR

KSC200212003

CURRENT GAIN-IIANDWIDTH PRODUCT

SAFE "OPERATING

FREA

1000

Vce-6 V
500

-

300

!Z
!

i

B
!!i.....

~l~~

"-

~'b 1&>"
")~

100

a:;

50

~

30

~

10

" ......
'

I

Ji

1
3

-1

-&

-10

-30 -50 -100

300

3

5

10

30

~

i

50

100

~

300

Vco(V), COLLECTOR-EMITTER VOLTAGE

Ia(mA). EMITTER CURRENT

POWER DERATING
0.8

'\.

I\.
r\.

25

c8 SA~SUNG

50

75

" '\
100

'\

125

150

175

SEMICONDUCTOR

200

182

NPN EPITAXIAL SILICON TRANSlsroR

KSC2223

.. HIGH FREQUENCY AMPLIFIER
Very small size to assure good space factor In hybrid Ie applications
• fy=600MHz'TYp. (lE=-1mA)
.
• Cob=1pF Typ (Vca=6V)
• NF=3dB Typ (f=100MHz)

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta = 25 0 C)
Characteristic

Symbol

Coliector·Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcoo
Vceo
VeBO
Ic
Pc
Tj
Tstg

Rating

Unit

30
20
4
20
150
150
-55-150

V
V
V
mA
mW
·C
·C

I

1. Base 2. Emitter 3.· Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 DC)
Characteristic

Symbol

Collector Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Time Constant
Noise Figure

hFE

ICBO
hFE
Vce (sat)

Coli

fr
CC'rbb
NF

Test Condition
VCE =30V, le=O
Vce=6V, Ic=1mA
Ic=:1OmA, IB=1 rnA
VcB=6V,.le=0, f=1MHz
Vce=6V, Ic=-1mA .
VcB=6V,le=-1mA
f=31.9MHz
Vce =6V,le=-1mA
f=100MHz, Rs=50!l

R

hFE

40-80

Typ

40

90
0.1
1
600
12

400

3

Max

Unit

0.1
180
0.3

",A
V
pF
MHz

ps
dB

Marking

CLASSIFICATION

Classification

Min

'.0
60-120

y
90-180

hFe grade

.c8

SAMSUNG SEMICONDUCTOR

183

KSC2223

NPN EPITAXIAL SILICON TRANSISTOR
COLLECTOIj CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

10

..
z

/

lI!a:

/"

::>

"a:

~

I
10-8"""
",-70,..

.--

8

-

Ji

0

Is""2o,.u\
2

o

,,=16,..
10

2,

12

I

14

16

18

'.1

20

0.2

~

20

50

100

Ic(mA~ COLLECTOR CURRENT

BASE AND COLLECTOR SATURAnON VOLTAGE
¥s COLLECTOR CURRENT

10

10

0.5

VeaV). COLLECTOR-EMITTER VOlTAGE

COLLECTOR CURRENT ¥s.
BASE TO EMmER VOLTAGE

1000

10'ls

Vce=6.0V

500

5, 0

~

60V

I,=sci,..
1,=46,..
10=36,..

'I

E

Vee"

500
0

IB=60~

0

"~

DC CURRENT GAIN ¥s. COLLECTOR CURRENT

,1000

200
100

Z

1.0

~
§

V,.(aat}

o. 5

~

go, 2

J
jM
0,0
0

Vee (sat)

1

./

~

s

~

2

'0.0 1

0.1

0.2

0,5
IdmA~

0,2
0, 1

10

20

0,2

0,4
V,.(~

COLLECTOR CURRENT

1000e~~

iI

t'00

~

g~~~
201---+-I-+-+-Hf+++---I-t-H-+++H

"00mEl~
50
2°r--t-t~~~-+-r+++~r--t-rtttH~

'\.

1'0,~11~11;11
i
J
0,1

VceM. COLLECTR·EMnTER VOLTAGE

SAMSUNG SEMICONDUCTOR

1,2

LO

-=31.9MHz

!i:

I 2001---+-I-+-+-Hf+++---I-+-H-+++H
1 50~--1-~1-~++H----+-1-+1-~~

0,8

BASE-EMITTER VOLTAGE

Vcs=-6.0V

~-LOmA

500

0,6I

COLLECTOR TO BASE TIME ,CONSTANT
¥s. EMITTER CURRENT

DC CURRENT GAIN vs.
COLLECTOR TO EMITTER VOLTAGE

,c8

1

1
O,S

0,3

-1

3

-10

20

50 -100

IdmA). EMITTER CURRENT

184

KSC2223

NPN EPITAXIAL SILICON TRANSISTOR

ys

GAIN BANDWIDTH PRODUCT
YS. EMITTER CURRENT

NOISE FIGURE
EMITTER CURRENT
10000

Vce=6OV
f=100MHz

24

Vee 6.OV

0

0

6

0

2

fz

8

~
~

t-....
~

4

0

-

0.1

0.3

100
-01 -0.2

10
I,(mA~

0.5

5
'e(mA~

EMITTER CURRENT

INPUT AND OUTPUT CAPACITANCE
0

f

-10

20

50

100

EMITTER CURRENT

POWER DERATING
1.0MHz

200

180
5

160
3

"

0
2
0

~(lceOI

Cob

1

(,,=01

\

0

1\

0
5

I\.

0

\

0

1,\

0.2

0
0.1

c8

0.2

SAMSUNG

0.5
1
2
5
10
20
Veo(1/) COLLECTOR-IIASE VOLTAGE
V",(VI EMITTER-aASE VOLTAGE

SEMI~ONDUcrOR

50

100

o

2~

0

20

40

T,(·C~

.

60

80

100

120

140

160 180

AMIBIENT TEMPERATURE

185

NPN EPITAXIAL
SILICON TRANSISTOR
.
.
HIGH VOLTAGE POWER AMPLIFIER
• Collector - Base Voltage Vcao =200V
• Current Galn-Bandwidtll Pl'Qduct fT =100MHz (Typ)

.TO-92L

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Rating

Unit

200
150
5
·50
800
150
-55-+150

V
V
V
mA
mW
. °C
°C

Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter· Voltage .
Emitter-Base Voltage
CollectOr Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcso
VCEO
. VESO
Ic
Pc
Tj
Tstg

1. Emitter 2. Collector 3. Base

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
O!Jtput Capacitance

BVcBO .
BVcEo
BVEBO
Iceo
hFE
VCE (sat)

Test Conditions
Ic =100pA. IE =0

,1~=5mA. Is=O

fr

IE .. -100pA.lc" O
Vce -200\1, IE =0
VcE =5V.lc -1OmA
Ic =10mA. Ie =1mA
VCE=30V.lc .. 10mA

Cob

Y,~~1=1OV. IE =0

Min

lYP

Max

200
150
5

Unit
V
V
V

0.1
240
0.5

40
100
3.5

5

pA
V
MHz
pF

- KHz

hFE

CLASSIFICATION

Classification

R

0

y

hFE

40-80

70-140

120-240

,

c8SAMSUNG SEMICONDUCTOR

186

NPN EPITAXIAL SILICON TRANSISTOR

KSC231 0

DC CURRENT GAIN

Vce.5V--t--+--++-+++tt---t-H

!500

3OOf-+++t+t----!--+++-++++I---+-H

o.s

10
Ie (mA), COLLECt'QA CURRENT

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURAnON VOLTAGE

I

10

-

- f-lc--

Vce=3f1!I

~r-.
VOE("')

V

Vee 101)

1

0.1

D.3

o.s

3

5

10

0.1

3050100

30 50 100

1.6

=

~:!S'~~UIae

VI

'3OOms

I

,"'"

0

I
--+--I

---

,I

i

t

3

5

10

30 50

100

300 500 1000

VOl M, COLLECION..nEA 1IOLllVE

c8

10

POWER DERATING

SAFE OPERATING AREA

500

5

Ie (IlIA), COLLECIOII ~

1000

'300

3

0,3 0.5

Ie (mAl, COLLECIOII CURRENT

SAMSUNG SEMICONDUCTOR

50

""

r-....

.......

'" '"

100

150

T. ('C), AMBIENT TEMPERATURE

,187

NPN EPITAXIAL SILICON TRANSISTOR . .

K9C2316

AUDIO POWER AMPLIFIER APPLICATIONS
• Driver Stage Amplifier ~
• Complement to KSA916

TO-92L

=

.. ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Ratin~

Symbol

Collector-Base Voltage
. Collector-Emitter Voltage
Emitter-Base Voltage
Collecto'r Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
. VCEO
VEBO
Ic
Pc
Tj
Tstg

Unit

120
120
5
800

900
150
-55- +150

V
V
V
mA
mW
°C
. °C
1. Emitter 2. Collector 3. Base

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

.

'\

Collector-Base Breakdown Voltage
Collect~r-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Collector Output Capacitance

Symbol

Test Conditions

Min

BVceo
BVcEo
BVEeo
Iceo
hFEl
hFE2'
Vcdsat)

Ic=1mA,IE=0
Ic =10mA, Ie =0
IE=-1mA,lc =0
Vce 120V, IE =0
VCE=5V,lc=10mA
VCE=5V,lc=10OmA
Ic =500mA, Ie =50mA
VcE =5V,lc=100mA
Vce =10V,IE=0
f=1MHz

1.20
120
5

h
Cob

=

Typ

Max

0.1

Unit·
V
V
V
p.A

60

80

240
1
120
30

V
MHz
pF

hFE CLASSIFICATION
Classification

0

y

hFE(2)

80-160

120-240

.c8

SAMSUNG SEMICONDUCTOR

188

KSC2316

NPN EPITAXIAL'SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE-EMITTER ON VOLTAGE

l

---

r--

'BLsJ;:;;:;;; F- IB_1C~nA_

800

'/

/

v~ ~

Ii ~ V,....
IfA ~

VCE-5V

I
IB.7mA-

,./ '1----

.1

IB.SmA-

IL

I

IB_4mA-

la-rI

1

IB-ar

,

I.

1"I~A

la_ol
0.2

10

os

0.4

OB

1.0

VIo M,IIA8E-EMITEA VOLTAGE

Veo M, COLLEC1OR-EMITTER VOLTAGE

•

COLLECTOR-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
1000 1-.

1-500

-..jvce-sv

I

l-

300

rHo -101.
3

~

I"""

I~

os
G.3

~

i

~

1
Q

~.o.os

G.03

10
1

3

5

10

30 50

100

0.1

300 500 1000

0.3 os 1

3

5

10

30

100

300 500 1000

• IC (mA), COLLEC1OR CURRENT

Ie (mA), COLLEC1OR CURRENT

SAFE OPERATING AREA

POWER DERATING
4.0
3.5

z

~

3.0

if •
~

2.5

Q

0:

~ 2~

~

l'.

1'-

~ 1.5

f

1.0

o.s
3

5

10

30

50

100

Veo M, COLLEC1OR-EMITTER VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

To

"

- -r--"'~

r-

50

T.

100

~

150

T. rC). AMBlENT.TEMPERJmJRE

189

KSC2328A

NPN" EPITAXIAL SILICON TRANSISTOR
$"

.

AUDIO POWER AMPLIFIER APPLICATIONS
• Complement to KSA928A
• Collector Dissipation Pc =1
• 3 watt Output Application .

To-92L

watt

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEeo
Ic
Pc
Tj
Tstg

30
30
5
2
1
150
-55- +150

V
V
V
A
W

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

OC
OC
1. Emitter,2. Collector 3. Base

"'

,,:. ;

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter. Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance

, hFE

-. BVcBO

BVcEO
BVEBO
IcBO
IEeo
hFE
VeE (on)
VCE (sat)

h'
Cob

Test Conditions

Min

Ic=loopA,IE=O
Ic=10mA, le=O
IE=-1mA; Ic=O
Vce =3O\I,IE=0
VEe =5V,lc =0
VCE =2V, Ic =500mA
, VCE=2V,lc=500mA
Ic=>

16

t---- IBsl~"">_

;"='j""iB.aor
i"·aor

!

!

'".j~.

;"·20r

20

40

80

80

100

Ie (mA);COLLECIOR CURRENT

Vee (V), COLLECTOR EMITTER VOt.TAGE

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10

COLLECTOR OUTPUT CAPACITANCE

60
30

z

"!(

II)

~

i
i

:!

r - f_1MHz
r - le_O

I--

9

~

I

100

0.5
0.3

0.1
0.05

0.5

'il 0.03

0.3

>

f.>

0.1
.1

10

30

50

100

300

10

30

50

1(J(,

300

VQ8 M. COLLECTOR BASE VOLTAGE

Ie (mA), COLLECTOFi CURRENT

POWER DERATING
1.6
1.4

2 1.2
~

1.0

II:

0.8

I
~

"'"

~ 0.6

f.

~

0.4
0.2

o

o

50

""-1""100

T. (Oe) AMBIENT TEMPERATURE

c8

""

SAMSUNG SEMICONDUCTOR

150

193

',

NPN,EPITAXIAL SILICON TRANSISTOR

..

.

.

•

LOW FREQUENCY· AMPLIFIER
MEDIUM SPEED SWITCHING
•
•
•
•

.

. I

TO-92L

Complement to KSA931
High Collector-Base Voltage Vcao=8OV
Collector Current Ie =700mA
Collector Dlssipetlon Pc =1W

ABSOLUTE MAXIMUM RATINGS (Ta:=25°C)
Characteristic

Symbol

Rating

Unit

VCBO
Vceo
VESO
Ic
Pc

80
61t
8
700·
1
150
-55-+150

V
V
V
mA

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
. Collector Dissipation·
Junction Temperature
Storage Temperature

Tj.

Tstg

W

°C
°C

1. Emitter 2. Collector

a.

Base

ELECTRICAL
CHARACTERISTICS. (Ta =25°C)
.
.
Characteristic
Collector-Base Breakdown Voltage·
COllector-Emitter. BreakdoWn Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
·DC Current Gain
Collector~Emitter Saturation Voltage
. Base-Emitter Saturation Voltage_
Current-Gain-Banqwidth Product
Output Capacitance

Symbol

Test Conditions

BVCBO
BVcEO
BVESO
lceo
lEBO
hFE
Vee (sat)
VBE (sat)

Ic .. 1OOpA,le-0
Ic=;1OmA, la=O
IE=-10pA,lc=0
Vca=6OV. IE=O
VEa =5V,lc=0
Vce='l!tI,lc=50mA
Ic=500mA,la=50mA
Ic .. 500mA,la=50",A
Vce -10V,lc=50mA
Vca-1ov,IE"0
f-1MHz

fr
Cob

Min

~p

Ma~

80

60
8
40

30

0.2
0.86
50
8

0.1
0.1
240
0.7
1.20

Unit
V
V
V
pA
pA
V
-V
MHz.
pF

. hFE CLASSIFICATION
Classification

0

y

hFE

. 70-140

120-240

>.c8 SAMSUNG SEMICONDUCTOR·

:..
:

1~4

"'.

KSC2331

NPN EPITAXIAL SILICON TRANSISTOR

STATIC CHARACTERISTIC
200
_.1. ___

180

r .--

180

....

-1 ___
t

BASE-EMITTER ON VOLTAGE

1-;_

.•

300

'40
1
a:

r

~ 100

_-.. . .- . . . -------I..
-------------II..

i

"a:u120 V"

:l
0
u

,'OmA

80

...
1 L----------.
L-___

--+-----+--_...,I.~0.4mA

40

20

OBmA

...,le=O.6mA.

80

.!!

.--~ -- +
---+·Vce_2V

SOD

--~I.~;.4mA

100

!:

-.j.

i

10

~.-_I~~-:",. ., I

U

,-_:=:~-=-J __"!.

r-----'--:---.....- .........,I•.O.2mA
1{J

15

20

25

30

35

40

45

0.2

50

0.4

240

ffi

8
g

~

120

:-:-

~

3

z
Q

1

g
~

Vee (sat)

0.5

~ 0.3

!

teo

~

>

I
I

I

0.1

Xo.os
40

VCE(~at)

~ 0.03

I

i~i

0-"1

5

10

~

IC!,!~I.; -I,

f-.

5

.-1--'

3

I

10

-

160

1.2

1.0

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

II
V.;.=W

200

08

0.6

VIe (V), BASE-£MITTER VOLTAGe

DC CURRENT GAIN

Ii

I

'

.!!

Vee (V). COLLECIOMMITTER VOLTAGE

~

I

30 50

100

1

300 500 1000

3

5

10 (mA). COLLECIOR CURRENT

Ii !!I

!
10

I

30 50

100

300 500

1000

Ie (mA), COLLECI"OR CURRENT

POWER DERATING

SAFE OPERATING AREA

1.6

~=
~

5000 f----l. Ta_25"C
3000 f----2. ·Single pulse

1.4

!

~ 1.2

f

~

1.0

~

a: DB

I

~

0.6

-

I~

o

:1

"" ""

I
50

100

T. (0C) AMBIENT TEMPEAATURE

ciS

' Ii

,ItT

I""

_.

o

i

·2ooms

Go 0.4
0.2

Illil

I

SAMSUNG SEMICONDUCTOR

150

,I

: ,

1

[I

:1

DC

50
30

,i

'III
".

10

3

5

10

30 50

100

I

ill
300

VCE (V), COLLECTOR-EMfTTER VOLTAGE

195

KS'C2340

NPN EPITAXIAL SILICON TRANSISTOR

COLOR TV CHROMA OUTPUT
TO-92L

• Coliector·Base Voltage Veso =35OV
• Current Galn·Bandwldth Product fT =50MHz (l\'p)

,ABSOLUTE MAXIM,UM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Col,lector-Emitter Voltage
Emi~er-Base Voltage
Collector Current
Collector Dissipation' ,
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VeBo
Veeo
VeBo
Ie
Pc
Tj
Tstg

350
350

V
V
V
mA
W
·C
·C

"

7
100
1
150
-55-150

'1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector. Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance

c8

Symbol
BVeeo
BVeEo
'BVeeo
leBO
' hFe
Vee(sat)

h
Cob

SAM'SUNG SEMICONDUCToR

Test Conditions

-

Ie =100pA, Ie =0
le=5mA, IB=O
Ie = -100pA, Ie =0
VeB =200V,le=0
Vee=10V,le=20mA
le=10mA,IB=1mA
Vee=10V,lc=20mA
VeB =10V, Ie =0,
f=1MHz

Min

'l\tp

Max

350
350

7
0.1
150
0,5

30
50

8

Unit
VI
V
V
'pA
V
MHz
pF

196

NPN EPITAXIAL SILICON TRANSISTOR

KSC2340
STATIC CHARACTERISTIC

DC CURRENT GAIN

20
18

10-120
IB- '00,.A f----'1

Ioi

~1OO

;

50
I;

B 30

80,.A

II

i

IBj80,.A

I

\I'T

~.!II

10

IB-40,.A

IBj2O,.A

o

o

20

40

80-

100

80

10 ,

VCE M. COLl.ECIOR EMITTER Wl.T_

30

50

100

Ie (mAl. COLI.ECIOR CURRENT

BASE-EMmER SATURATION VOLTAGE
COLLECTOR-EMmeR SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE

l00~~~
e--:-- _ _
_
50
30

~-t

f-1MHzIE-O -

1-

•.. -++++tIft+--t--HH-1-H-1t----+--I--l
10

30

50

100

30C

3

5

10

30

50

100

Vea M. COLI.ECIOR IABE Wl.TAGE

Ie (mAl. COLl.ECI'OR cu~

POWER DERATING
1.8

I

------

--

o

--

I

""

I""

0.2

o

"'-i"'-

:

i

~

100

150

T. ('C). AMBIENT TEMPERATURE

c8

SAMSUNG SEMI~NDUCTOR

197

.

-

,

NPN EPITAXIAL SILICQN TRANSISTOR
COLOR ,TV AUDIO OUTPUT
COLOR tv VERTICAL DEFLECFION OUTPUT

'TD-92L

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

'. i

Vcao
VCEO
VeBO

Ie
Ie
Pc
Tj
Tstg

Rating

Unit

160
160
6
1
0.5
900
·150
-55"'150

V
V
V
A
A

roW
·C
·C
1. Emitter 2. Conector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Breakdown Voltag!l
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance

Icee
IEee
BVcEo
hFE
VCE (sat)
VBl (on)

Vce=150V.IE=0
VEB=6V. Ic=O
ic =10mA.le·=0
VCE=5V. Ic=200mA
Ic=500mA. IB=50mA
VCE=5V. Ic=5mA
VCE=5V. Ic=200mA
VCB = 1 OV. IE=O. f= 1 MHz

hFE

fr
Cob

Typ

. Max
1
1

160
60
0.45
20

320
1.5
0.75
100
20

Unit
,..A
,..A
V
V
V
MHz
pF

CLASSIFICATION

Classification

R

0

Y

hFE

60-120

100-200

160-320

,c8

Min

SAMSUNG 'SEMICONDUCTOR

.

198

KSC2383

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

STATIC CHARACTERISTIC
1.0

....

~
8"

~

0.6

0

o.

~

U

i
j

0.2

'~=1OmA

EMITTER COMMV
T.=2SoC

0.8

V

/

./V"

;'"

. / V"
../ / ...... ~
,/,/1.0--

/

1/
IJ /

'I ~ ~
'h ~

1000

-

..or,::: mA

-

~

v~-',b~

Z

"'I'N-

C

...

CI 100

~

Ii

3mA

11'1 25mA

8
g

IR""'2mA

.1

~

lL

300

r·mj
I'R

EMmER COMMON

500

Vel

I---

50
30

10

iA=1.5mA

v~

le-i mA

IR-15mA
02

0.'

0.6

1
10

10

08

30

V.,.(Vl. COLLECTOR-EMITTER VOLTAGE

=

...........

§ 100

1000

MI

I

~

'\ i""o" .\.

ili
~

U

Vee 5V-

~~

30

'oR CUMMUN

T.-25°C

Z

VcE""'0V

50

500

5

~

300

.1

10

w

Z
W

300

'''UMMON'=
25t>C

500

"...

100

COLLECTOR-EMITTER SATURATION VOLTAGE

~:f

~

50

IclmA). COLLECTOR CURRENT

DC CURRENT GAIN
1000

g

-sy

3

0
01

'10 10

005

1cI1s-5

003

~

!

00 1

~

>0.005

VcE =1V

0.003

10
40 50

300

100

500

3000

1000

1

3

5

10
IclmA~

IclmA). COLLECTOR CURRENT

30

50 100

3005001000

COLLECTOR CURRENT

CURRENT GAIN-IIANDWIDTH PRODUCT

BAS&£MITTER ON VOLTAGE
1.0

_.

0.001

I
II

EMIl'rER COMM6N
1cI1s-1O

0.8

Ii

I

u 0.6

"e
~0

U

I
I
I
I

0.'

~
0.2

0.2

0.'

~
0.6

,0.8

V.. (V). BASE-EMITTER VOLTAGE

ciS

SAMSUNG SEMICONDUCTOR

1.0

3

5

10

30 50

100

300500 1000

IclmA). COLLECTOR CURRENT

199

,KSC2383

NPN·EPITAXIAL SILICON TRANSISTOR
COLLECTOR OUTPUT CAPACITANCE

100

SAFE OPERATII\IG AREA
10

MnTERtCM
-1MH<

500

a=26°C

3.0 r-k MAX. ~PuIse

300

1.0

~

!5

1QO

~

f
",
C

~o

30

~

B

10

--

....

0.5 ~

.~

03

~

0.1

j

0.05

=

U ~~ l
~~1t"h "
'~

~

ao""''?.so
'

8003

C

~

Jl o.oo 1

~

0005
0.003

3

5

10

30 50

100·

300 500 1000

V.oM. COLlECTOfI.IIASE VOUAGE

'cR~AMSUNG
SEMICONDUCTOR
."

000 1

::;
@

If
3

5

10

30 50

100

300 500 1000

VcdV\, COLLECTOR-EMITTER VOLTAGE

200

KSC2500

NPN EPITAXIAL SILICON TRANSISTOR
,

• I

MEDIUM POWER AMPLIFIER
LOW SATURATION

TO·92L

• VCE (sat)=O.5V (lc=2A, 1.=50mA)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Coliector·Base Voltage
Coliector·Emitter Voltage
Coliector·Emitter Voltage
Emitter·Base Voltage
Collector Current (DC)
'Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

.

VCBO
VeEs
VeEO
VEBO
Ie
Ic
IB
Pc
Tj
Tstg

Rating

Unit

30
30
10
6
2
5
0.5
900
150
-55"'150

V
V
V
V
A
A
A
mW
°C
°C

1. Emitter 2. Collector 3. Base

• PW:;;10ms, Duty Cycle~30%

ELECTRICAL CHARACTERISTICS (Ta = 25 0 C)
Characteristic

Symbol

Test Condition

Collector Cutoff Current
Emitter Cutoff Current
Coliector·Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
DC Current Gain

leBO
lEBO
BVeEo
BVEBO
hFEl
hFE2
VCE (sat)
VBE (on)

VcB =30V, IE=O
VEB =6V, 1c=0
le=10mA,IB=0
IE=1mA, le=O
YCE=1V, Ic=0.5A .
VCE=1V,lc=2A
Ic=2A, IB=50mA
VcE =1V, Ic=2A
VcE=1V, Ic=0.5A
VcB=10V, IE=O, f=1MHz

Collector Emitter Saturation Voltage
Base Emitter On Voltag!'l
Current Gain Bandwidth Product
Output Capacitance

hFE

fr
Cob

Min

10
6
140
70

Typ

Max

Unit

100
100

nA
nA
V
V

600
200
0.2
0.86
150
27

0.5
1.5

V
V
MHz
pF

(1) CLASSIFICATION

Classification

A

B

C

0

hFE (1 )

140-240

200-330

300-450

420-600

c8

SAMSUNG SEMICONDUCTOR

201

KSC2500
..,.

NPNEPItAXIAI. SILICON TRANSISTOR

'r"

•

•

. ' ,

. , . . "

STATIC CHARACTERISTIC
5

EMIlTEA COMMON

I

Ta=25 D C

10000

'

"

.'

,

~

EMITIER COMMON
Vc:t.- 1V

3000

~1000

la=2 mA

/

3

, ,

5000

I
P'B-3OmA

4

,

DC CURRENT GAIN

1a=50mA

~1e""40m

-

r,

i5

/1--""

500

B
0:

2

~-1

'/'

300

g

mA

i
18 5mA

1

100

50
0

~, "

10
001

.1

0030.05 0.1

Vce(V), COLLECTOR-EMITTER VOLTAGE

IdA~

BASE-EMITTER ON VOLTAGE

3

0.30.5

5

10

COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE

,I

5

EMITIER COMMON
VCE-1V

1

MInER'COMMON
lei'" 40

5
4

3

.I
I

3

2

V

1

11

5

.J....-"""

/

1

II
0.2

l/

0.4

0.6

10

0.8

0.0 1
0.040.05

0.'

V.. (V), BASE-EMITTER VOLTAGE

POWER DERATING

SAFE OPERATING AREA

5.

Or--

3.o

~

"i-----'

r\.

0

'\

75

T.(·~

1~

0

~

Q

.1

'\

o. 5
50

AX. (Pulse)

5

0

25

Ie

10M . eontinuous

3

'I\.

6

c8

0.5

0

3. 5

5

0.3

IdA), COLLECTOR CURRENT

4. 0

0

'L

100

0.0 5
. 0·03

'\

125

150

175

CASE TEMPERATURE

"x-,

200

0.0 1
0.1

0.30.5

3

5

10

30 50

100

Vce(V), COLLECTOR-EMITTER VOLTAGE

~"",."".

SAMSUNG SEMICONDUCTOR

202

KSC2669

NPN EPITAXIAL SILICON TRANSISTOR .

FM RADIO RF AMp, MIX, CONY, OSc, IF AMP
• High Current Gain Bandwidth Product

'T =250MHz ~p)

TO-925
I
. I

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage ,
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

~

Rating

Unit

35

V
V
V
mA
mW
°C
°C

30
4

30
200
150
-55-150

1. Emitter 2. Collector 3. Base

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Charact8r1stic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance

Symbol

Test Condition

BVcso
BVcEo
BVESO
ICBO
lEBO
hFE
Vee(on)
Vee (sat)

'c =100pA,IE=0
Ic=5mA,le=0
IE =- 10pA, Ic =0
Vce=3OV,IE=0
VEe =4V, Ic =0
VCE=12V,lc=2mA
VCE=fN,lc=1mA
Ic=10mA,le=1mA
VcE =10V, Ic=1mA
Vce =1OV,IE=0
f=1MHz

fr
Cob

Min

typ

Max

35
30
4

40
0.65
100

0.70
0.1
250
2.0

0.1
0.1
240
0.75
0.4
3.2

Unit
V
V
V
pA
pA
V
V
MHz
pF

hFE CLASSIFICATION
Classification

R

0

y

hFE

40-80

70-140

120-240

c8

SAMSUNG SEMICONDUc:roR

203

'KSC2669

.NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERIsTIC

BASE-EMITTER ON VOLTAGE
.32
28

r--v<

_I""

,

--

o

1

3

4·

6

7

8

9

V

o.a

10

I

o.a

1.0

1.2

Yea (y), _-EIIIi'TER VOLTAGE

Veo (y), COLLECTOJI.EMmERWLTACIE
.

DC CURRENT GAIN

CURRENT GAIN-ElANDWlDTH PAOOUCT

1000

1000

r-

Vce_1OV

_I

V

.,.."'"

--

/

10

10
0.1

0.3

1

Q5

3

5

10

30 50

10

100

Ie (mA), COLLECIOR CURRENT

Ie (mA), COLLECIOR CURRENT

BASE-EMmER SATURATION VOLTAGE
COLLECroR-EIIITTER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE

10

~f:,I~Hz
IE_O

I-- ie-lOla

(

,,/
VeE (

0.1

0.3

Q5

..........

r--....
3510

10

30

50

100

Ie (mAl, COUI!ImIR CURIII!NT

c8

SAMSUNG

~EMICONDUcToR

204

KSC2710

NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY· POWER AMPLIFIER
TO·925

• Complement to KSA 1150
• Collector Dissipation Pc = 300mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

. Rating

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

40

VCBO
Vceo
VEBO
Ic

20
5
500

Pc

300

Tj

150
-55-150

Tstg

Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Collector 3

Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

BVeBO
BVceo
BVEBO
leeo
lEBO
hFE
VCE (sat)

Ie =l00pA, IE =0
le=10mA,le=0
IE = -100pA, Ie =0
Vce -25V,l e =0
VEe =:N. Ie =0
VCE=1V,le=0.1A
Ic =O.SA, Ie =O.OSA

Min·

..
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage

Typ

-

Max

Unit

V

40
20
5

40
0.18

0.1
0.1
400
0.4

V
V
pA

pA
V

hFE CLASSIFICATION
Classification

R

0

y

G

hFE

40-80

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUCTOR

200

,·,KSC2710

::;

NPNEPITAXIAL SILICON TRANSISTOR

"

' \ '

STATIC CHARACTERISTIC

BASE-EMlTTER,ON VOLTAGE

'00

500

lB.lDmA

----IV -

450

...-

400

50

IIB.,L
I
j.....-'e .. 1.6mA
I

I.--

30

t- rVCE-'V

1

I

Ie-lAmA

y~

IB-,.2ImA

'/'

.

IB~,bmA

~

,.

,

le_O.8mA
le ... O.6mA

'B~0.4ml- r - -

1/

'00

I I

ro.i-

50

o

o

3

4

r--

9

I

G.,

'0

o

0.2

os

os

1.0

1.2

VeE (y), COUEClOfl.EMtTTER.VOLTAGE

-(y), _&allTTER~

DC CURRENT GAIN

8ASE-EMmER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

1000 _ _ _
500 -f-Vceo1V
300

I:
3

5

10

30 50

i
100

300 500 1000
Ie (mA), COUECI'OII CUIIIIEHT

Ie (mA), COUECI'OII CURMNT

COLLECTOR OUTPUT CAPACITANCE
'00
50 1----~-'MHz...
le.O
30

r-- t--,
10

30

50

100

206

NPN EPITAXIAL SILICON TRANSISTOR
.
.
.

KSC2715

FM RADIO AMP, MIX, CONY OSC, IF AMP
80T:23

• High Power Gain Gpe=30dB

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

. Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcoo
VCEO
VEoo
Ic
Pc
Tj
Tstg

Rating

Unit

35
30
4
. 50
150
150
-55-150

V
V
V
rnA
mW
°C
°C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 0 C)
Characteristic

Symbol

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
. Collector-Emitter Saturation Voltage
Base-Emitter Saturation
Current Gain-Bandwidth Product
Output Capacitance

fr
Cob
Gpe

Power Gain

hFE

Icoo
IEoo
hFE
VCE(sat)
Vsr. (sat)

Test Condition .
Vca=35V, IE=O
VEa =4V, Ic=O
VcE =12V, Ic=2mA
Ic=10mA,la=1mA
Ic=10mA, ia=1mA
Ic=1mA, VcE =10V
Vca =10V,IE=0
f=1MHz
VCE"'6V,IE=-1mA
f=10.7MHz

hFE .

Typ

Max

2.

0.1
1
240
0.4
1.0
400
3.2

V
V
MHz
pF

30

33

dB

40

100

27

Unit

,..A
"A

. Marking

CLASSIFICATION

Classification

Min

R

0

y

40-80

70-140

120-240

hFe grade

c8

SAMSUNG SEMICONDU~R

.. 207

. NPN EPITAXIAL SILICON TRANSISTOR

KSC2715··

STAnc CHARACI'ERISTIC
10

. BASE.EMITTER ON VOLTAGE
32

18-110""
I

•

28

1a_8OpA

8

r---v'

-I••

Ie-~

7

-~
I

8

Ie-!OpA-

I
'.-4OpA-

I
.I
'.-2OpAI

18_3OpA-

2

'·-r-

1
0.

V

0.12345878810

o.e

G.4

Vel! M. COLLECJOR.EIIITTER WLT_

tAl

Q8

1.2

-M.~-­

CURRENT GAIN-BANDWIImt PRODUCT

DC CURRENT GAIN
1000

1000

f--

VCE_1OV

V",,-I2V

....... r--

,...

--

~

V

30

10

10

0.1

G.3 G.5

1

3510

3050

I

100.

30

10

1e(mA). COUECIORCWMNT

BASE-EMITTER SATURATION VOt.TAGE
. coueCTOR-EMITTER SATURATION VOLTAGE

-=

10.

f:=

r-

•

ie-tOle

•

-I

-

V

VCl!I

...LJ...

I:,
3

I

..........

...
i'...... .....

1-0.

0.1

c8

G.3

G.5

3

5

10.

SAMSUNG SEMICONDUcroR

3510

30

50

.100

208

KSC2734

NPN EPITAXIAL SILICON TRANSISTOR,

MIXER, OSC. FOR UHF TV TUNER
SOT·23

High 'T: 3.5GHz (TVP)

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
. Ic
Pc
Tj
Tstg

Rating

. Unit

20
12
3
50
150
125
-55"'125

V
V
V
rnA
mW
·C
·C

1 Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product
Output CapaCitance

BVcBO
BVcEo
BVEBO
ICBO
hFE
VCE(sat)

Ic=10",A.IE=0
Ic=lmA. RBE=oo
IE= 1 O",A. Ic=O
VcB :=15V. IE=O
VCE=10V.lc=5mA
Ic=10mA.IB=5mA
VCE = 1 OV. Ic= lOrnA
.
VCB='OV. IE=O. f=IMHz

20
12

c8

fr
Cob

SAMSUNG SEMICONDUCTOR

Typ

Max

3
20

90

1.4

3.5
0.9

700
200
0.7
1.5

Unit
V
V
V
nA
V
GHz
pF

209

kS,(:2734
DC CURRENT GAIN

POWER DERATING
200

200

VeE-tOV

175

160

i~
ffi

~
~
..

150

\\

125

~

"!iii 120

1\

100

w

0:
0:

\

75

""

'\\

50

25

""Ii

~

-

~bo

'"

40

r...

\

25

,80

o

50
75
100
125
150
Tc(·C), CASE TEMPERATURE

175

200

1

5

10

20

50

100

1,(mA), COLLECTOR CURRENT

CURRENT GAIN BANDWIDTH, PRODUCT
VCE""10V

COLLECTOR OUTPUT CAPACITANCE
20

f=l,MHz

18

V l""i'..
II

l'

--

1/

/
o

o
1

10

20

50

100

1

REVERSE TRANSFER CAPACITANCE
2,0

10

20

50

f=1MHz

16

NOISE FIGURE

vs.

COLLECTOR CURRENT

0
Vcc=BV
f"i'"90DMHz

6
"

;'52
"

J

V

t'-..
l'

b.

,-

0.8

4

100

VC8(V), COLLECTOR-BASE VOLTAGE

IdmA), COLLECTOR CURRENT

~

V

V

V

o
1

5

10

20

50

100

V,o(V), COLLECTOR·BASE VOLTAGE

c8SAMSUNG SEMICONDUCTOR

5 ,
Ic(mA), COLLECTOR CURRENT

210.

KSC2734

NPN EPITAXIAL SILICON TRANSISTOR

OSCILLATING OUTPUT VOLTAGE v•.
SUPPLY VOLTAGE

OSCILLATING OUTPUT VOLTAGE ••.
COLLECTOR CURRENT
.
200

....

w

"~
<

160

V

/

0

"...
"~
0"

120

i/

";::
Z

~

J

Ic-;5mA

f=930MHz

w

"~

"-

/

<

\.
\

'60

0

'

/'

"...

."...
"0

120

/

:i"
z

J

ao

..
:I

1/

U

I

;;

/

40

E

J
6 . .,'

8

40

'0

'0
Vcc(V), SUPPLY VOLTAGE

2ND I.M.DISTORTION vs.
COLLECTOR CURRENT

3RD I.M. DISTORTION v••
COLLECTOR CURRENT

50

V

40

V

0

II:

30

1/

~

...
Q

VV

50

off
~

"~

40

IIJ
i/

~

"~

30

'0

20

o

8

12

16

20

o

8

'6

/

..
Z

2

II:
W

"0

'2

I

-'"

.".

Z

u

if

,."

U

c8SAMSUNG

20

f=9QOMHz

'2
z
:;;

'"

"

'\.

~

4
6
COLLECTOR CURRENT

SEMICON~UCTOR

.........

I

.~
~

--

I

'"
1,(mA~

16

'6

Vcc=6V

~

12

POWER GAIN vs. FREQUENCY

CONVERSION GAIN ••. COLLECTOR CURRENT
20

.

Ic(mA}, COLLECTOR CURRENT

lo(mAI. COLLECTOR CURRENT

"

..... I---

//
'/

~

~

-

.... .:-10-

60

0

I

20

Vcc=10V

...0

/

Ii

~.

Z

II

0

~
~

70

Vcc=10V

;::

...

L

80

1,(mAI. COLLECTOR CIIJ'IRENT

Z

...-

0

0

~

-

200

Vcc=6V
f=930MHz

10

-4
400

I
500

600

700

f(MHz), 'FREQUENCY"

800

.900

"KSG2755,

NPNEPIJAXIAL'SILICON TRANSISTOR

RF AMp, FOR VHF TV TUNER
50T-23

• LOW ,NF, HIGH Gpe
• NF=2,OdB lYP- Gpe=23dB Typ. (f=200MHz)
• FORWARD AGC CAPABILITY TO 30 dB

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic .

Symbol

Collector-Base Voltage'
Collector-Emitter Voltage
Emitter-BasI;! Voltage
Collector Current'(DC)
Collector Dissipation
Junction Temperature
Storage Temperature

Vcso
Vceo
Vem
~
Pc
Tj,
Tstg

Rating

Unit

30
30
5
20
150

V
V
V
mA
mW
,oC

150
-55-150

°C
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Collector Cutoff, Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Power Gain
AGC Current

Icso
hFE
fT
Cre
Gpe
IAGe

Noise Figure

NF

hFE

Test Condition
Vcs=20V, le=O
Vce=10V,lc=3mA
Vce ';"1OV, 1c=-3mA
f=1MHz, VcB=10V, le=O
f=200MHz, Ic=3mA
f;=200MHz
Ie of Gpe -30dB
f=200MHz,lc=3mA

Classification

R

0

Y

flFE

60-120

90-180

120-240

SAMSUNG

Typ

60
400

1f!0
600
0.3
23
-10

-12

MHz
pF
dB
mA

2.0

3.0

dB

20

Max

Unit

0.1
240

/AA

0.5 '

Marking

CLASSIFICATION

c8

Min

,SE~ICONDUcrOR

H1 0

212

KSC2755

NPN EPITAXIAL SILICON TRANSISTOR

10

Ie-VeE CHARACTERISTIC

hFE-1c CHARACTERISTIC

-

1000_",_
500

J~~
~k--"~.....
J .,-'

B:

Ih ~~ ~~

h ~ . /~

'" -

iV/.V

~

200~-+-++++H~--+-~+H~r--+-+++~~

1s-6O.,A

1'=1-.....

~ 10-

~~
~ -' "..-

20
1 10 _ _

IB=40~A

r/
~"

g

1s=12O.,A

10

, 8

0.1

0.2

lc(mA~

COLLECTOR CURRENT

I

VIE (satHe CHARACTERlsnc

VCE (satHe CHARACTERISTIC
1000a

10 20 50 100

0.5

V"'(YI. COLLECTOMMITTER VOLTAGE'

10,1

10000~EIIa.

~=1O'1

~

5000

~5000~-+~~H+~-+-++++HH-~-+~4+~
j!!

~

:! 200a

g

/

S

~ 1000

500
200
100
! 50
20
10

=1OV

~
ali
i:!

Z

~

~

!

~

1--+-++lM+ttI-~+---H++tltt--+-+--H++ftl

!'OO0"I~il§11
500E

-

:i

2000

!

!

.>

01

0.2

10

0.5
,1c(mA~

20

50

100

Ie

COLLECTOR CURRENT

Ir-IE CHARACTERISTIC

(mA~

COLLECTOR CURRENT

C""VCB CH,ARACTERISllC

1°oom1aIlDII
__
VCE 10V

t;

f=1JlMHz
J,,=0mA

~ 500~-+-++44+~~ +-+4~~~-+~+++H~

i 200

1--+-++H+'Ht--+--t-l-H-N-fI--+-+--H++ftl

!
'i~ 100~;ltmll'll
50E

"-

IB 20r--r-rrH~r--r~~~--~+++r~

.......... I'0,

I,,(mA). EMITTER CURRENT

=8

SAMSUNG SEMICONDUCTOR

.....

10

,20

40 60

100

VcaCYi. COLLECTOA-BASEVOLTAOE

213

KSC2765
.
.
,"

MPH EPITAXIAL SILICON TRANSISTOR

',"

P...T. CHARACTERISTIC

yie-' CHRACTERISTIC

200

60

i

/c:::L.

40

\

w

U

20

Z

C

"i\.

....o.

20ott1Hz

"

iii

300M~Z\

it

e·

"

-

-20

I

100

75

I

~

I\.

50

IS

1;1

\
25

T

f-100MHz

5mA

200 30~'00MHxMHz MHz MHz"
.

w

\

a

Faa

-40

\

.00T

Yld-gte+j:lte

Vce-1°V
12.

150

175

-60

200

o

20

40

T,j"C), AMBIENT TEMPERATURE

60

gJo(mS~

100

60

120

CONDUCTANCE

';',
yro-f CHRACTERISYIC

yte-f CHRACTERISTIC
.'

a

g

~

I

&-0.8

!of
i

~~MHZ

I

-25

,

300MHz

200MHz

I'- f~

1c=10mA

I

'l/mA

100MHz

-50

- 1 . 2 1 - - - + - - - + - - - + - - - + "......--1
400MHz

Ii
e

1-75 r-----

400MHz

./

-

.............

300MHr--

-1.6t---+-~-l---+-----t-----t

200MHz

-100
yre-gre+jbre

yfe=gfe+Jbfe

VCE.=10V

VCE

-2.~LO-.,---0L...--.J0.-,---0.J,.2---0J..-3--....
0.4

-12 5

=I°

50

V

gfo(m~

yoe-f CHRACTERISTIC

~+jboe

20

5

18

30

16

25

114
3

1

400MHz

V

P

30QMHz-

7~ ./~OOMHZ
V
0.25

20

~

15

~

~ 10
!il

o. 10

~

,

i

0.5

8

100

1.0

gao(mS), CONDUCTANCE

cS'SAMSUNG SEMICONDUCTOR

;,;=

Vc~'l0
RE-2400

V

Goo

t"-.......

"

'\.

"
-10

0.75

75

Goo·'f- 20bMHZ

5

....f-10T HZ
10m!,

a

G:.12

a;

5

11

50

COIIDUCTANCE

Ope-Ie, NF-Ic CHRAPTERISTIC

yoe ..
Vee-l0V

2

25

25

..emS), CONDUCTANCE

Ii

1DOMHz

/'

5mA

-1 5

-

NF

./

/

~

\

V

\
NF: f-2DOMHz
• Vc=10V-

Ao150~
10

ic(mA), COLLECTOR CURRENT

214

KSC2755

. NPN EPITAXIAL SIUCON, TRANSistoR

POWER GAIN AND NOISE FIGURE TEST

Vc(V) 10V

c8

SAMSUNG SEMICONDUCTOR

215

.

' .

1(8.C2156

'.

..

'

~

.

. NPN EPITAXlALSIUCON. TRANSISTOR

MIXER FOR VHF TV TUNER
• HIGH Gce

flYp.

501-23

23dB)

ABSOLUTE MAXIMUM RATINGS (Ta=25. oC)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
CoUeclor Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Ti.
Tstg

Rating

Unit

30
20
4
30
150

V
V
V
mA
mW
°C
°C

150
-55-150

1. Base 2. Emitter 3. Col/ector

ELECTRICAL CHARACTERISTICS (Ta=25 °C)
Characteristic

Symbol

Test Condition

Collector Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product
Reverse Transfer Capacitance
Conversion Gain

leBO
hFE
VCE (sat)

Vce=20V, IE=O
Vce=10V,lc=5mA
le=1.0mA,le=1mA
VCE =10V,IE=-5mA
Vce=10V, IE=O, f=1MHz
Vce=10V,le=3mA
fRF =200MHz,IF =58MHz
veE=10V,le=3mA
fRF =200MHz, IF =58MHz

Noise Figure

hFE

fr
Cre
Gee
NF

Min

Typ

Max

Unit

0.1

fJA

60

120

440

500

850
0.35
23

0.5

15

6.5

0.5

V
MHz
pF
dB
dB

Marking

CLASSIFICATION

Classification

R

Q

y

hFE

60-120

90-180

120-240

H20

hFE grade

c8

SAMSUNG SEMICONDUCTOR.

216

KSC2756

NPN EPITAXIAL SILICON TRANSISTOR
Ic-VCE CHARACTERISTIC

10
~
I"I -

~

-

",.. ~ I -

Ir ~ I -

-

:,...-r~
II'"

hFE-lc CHARACTERISTIC
1000
V

18==70,"",

-

200

\a""60~
1.~50""

~

-

IB=4o,..A

Z
0:
0:

50

U
U

20

"i

..J30""
1.~20""

12

1=---'

100

CO

...
"'
:>

10

r---

le=1JJAA,

16

1
01

20

0.2

Vco(V), COLLECTOR-EMITTER VOLTAGE

~

500

1000

I

500

~

200

"'0:0:

100

z

200

V

100

\

i

:>

u

50

"If

50

:I:

~

20
10

20
10

0.1

0.2

0.5

10

20

50

0.1-0.2

100

g'

5.0

13

2. 0

c::i

1. 0

;

05

~

O. 2

I

~

0

fO

20 -50

100

f 1.0MHz

200

0

0

r....

1\
"1\

\

~

1

"1\

5

0.02
0.0 1

0.1

0.2

0.5'
Vc,(~

c8

10

EMITTER CURRENT

P..T. CHARACTERISTIC

Cra-Yea CHARACTERISTIC
0

-5

-0.5
lo(mA~

Ie (mAl, COLLECTOR CURRENT

::

•

VCE=10V

12000

~

-

100

1

~Z 1000

!l

50

5000

~

i

20

tr-Io CHARACTERISTIC

i! 2000

~

10

2.

10000

Ie 10'"

5000

~

0.5

lc(mAl, COLLECTOR CURRENT

V.,.{sal), V.,.{sal)-lc CHARACTERISTIC
10000

:i

=1DV

500

~.~

SAMSUNti

10

20

COLLECTOR-IIASE VOLTAGE

SE~ICONDI,JCTOR

50

100

25

50

75

T~·C~

100

\

125

150

175

200

AMBIENT TEMPERATURE

217

KSC21S6

NF!N EPITAXIAL SILICON TRANSISTOR
yi....f CHRACTERlsnc

60

yre-f CH!!ACTERISTIC

Y18=~I8+J;:tie

",,-goo+jbe

VCE=10V

Vce=1OV
I

50

-o.21----.\---.\---+----}-,----l
I,

I

I

300

400MHz

200MHz MHz:

1-100

MH~

5mA
L.~

3m;-..

200MHz

MHz

10mA

'=400MHz

'OOMHz

I~'
f

-o.ol---l-~rl-,,--+---J-,----l

J
-0.a~--+_--+_-3OI'""''''''''-+----I

10 1c-3mA

.

10

....,.

30

t,:'"

30

20

40

50

-,.~LO.-2--l--.....,l----,..,...-.....,..,...-~o.a

00

glo(mS~ CONDUCTANCE

alO{mS), CONOOCTANCE

yte-f CHRACTERISTIC

yoe-f

yfe=d..+J>Ie.

CHRACTERI~TIC

yoe-goo+jboe

Vce-fOV

Vee=10V

~.

Ic·'i3InA
-30

i

~

I,

;;,:A
\

l(
,

-60

al

f

j' ,

,

-90

I .

1=400
MHz

-120

-150
-50

,

I

\
\
.\

/ ,
~/

\

\
I

\

I

\

30rMHz'~

I

~10mA

100MHz

200MHz

o

,00

50

150

200

0.2

260

l",l~~Hz, l89d~Vl5~O
0

!

\

I

,/~

"

/

\

" ' 0 <.> 15 - -

I .' Jt

V

/

+~

V

K

I\.

II
~

/

I

~

i

8 '

.100

\

I
o

\

I
I

\

\
~

I

!

",,-200MHz,

1,\

ao de,.Vl500

fL.oca=258MHz. 105 dB,N/500

at
5
90

,

"...,

/

ILocal-258M,Hz

5

~

110

(dll!AV/501l), OSC LEVEL

" c8SAMSUNG SEMICONDUCTOR

1.0

CONDUCTANCE

Gce-Ic CHRACTERlsnc

NF-OSC LEVEL, Ck,e-OSC LEVEL

,5

o.a

0.0

0.4
gooCmS~

aro(mS), CONDUCTANCE

o

F

0IUr;tjT L~L

~

I
10

Iclm~ COLLECT~R

CImRENT

21.8

KSC2757,

NPN EPITAXIAL SILICON TRANSISTOR

MIXER OSCILLATOR FOR VHF TUNER
SOT-23

HIGH IT (IT=1100MHz Typ.)

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcro
VCEO
VfB()

Ie
Pc
Tj
T8tg

Rating

Unit

30
15
5
50
150
150
-55-150

V
V
V
mA
mW
~C

'C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTE~ISTICS (Ta = 25°C)
Characteristic

Symbol

Test Condition

Collector Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance

ICBO
hFE
VCE (sat)

VCB=12V, IE=O
VCE = 1OV, 1e=5mA
Ic=10mA,IB='mA
VcE =10V,IE=-5mA
f=1MHz, VcB=10V
IE=O
f=31.9MHz, VCE=10V
IE=-5mA

Collector Base Time Constant

hFE

h
Cob
CC'rbb'

Min

Typ

60

120

800

1100

10

Max

Unit

0.1
240
0.5

,..A

1.5

V
MHz
pF

15

ps

Marking

CLASSIFICATION

Classification

R

0

y

t!,.E

60-120

90-180

120-240

H30

'hFE grade

.c8

SAMSUNG SEMICONDUCTOR

219

NPN EPITAXIAL SILICON TRANSISTOR.

KSC2757

lin-ie CHARACTERISTIC

Ie-Vee CHARA

z1000

~
~

500

ill

200

~
Il

1'00

50

.. ?O
0.2

0.5

)0

20

50

10
0.1

100

0.2

"..1. CHARACTERISTIC
10000

0.5

10

Ie

1c:(mA), COLLECTOR CURRENT

(mA~

20

50

100

COLLECTOR CURRENT

Cob-Vea CHARACTERiStiC
100

I! ,- 10V

1

f-=1.0 MHz
~~

0

5000

r

z~
;!

ooo
1000

~

I...

·500

I

200

I

50

0
5

::>

I!:
::>

r-r-.

0

i

100

c.>

1

o. 5
o. 2

20
10
-0.1

0.2

0.5

5

-10 -20

l.emAl. EMITTER CURRENT

c8

0

SAMSUNG SEMICONDUCTOR

-50 -100

o. 1

0.1

0.2

0.5

10

20

50

Vco(~ COLLECTOR-IIASE VOLTAGE

220

KSC2757

NPN .EPITAXIAL SILICON TRANSISTOR
P..T. CHARACTERISTIC

INPUT ADMITTANCE (ylb) vs. FREQUENCY

0

400

",,-J..+Jbib
Vca=10V
350

f-1000MHz
I

1-i

0

800
a ------I aoo
2

400

W

-40

0
0
0

I"

I-a
.........

'-

0
T,(·C~

0

'"

\ Ic"'3mA

K \J
~

-60

-1do
200

100

1

o

40

I

\

\

~

80

glo(mS~

AMBIENT TEMPERATURE

10mA

120

160

200

240

CONDUCTANCE

FORWARD TRANSFER ADMITTANCE (ytb)
vs. FREQUENCY
'50~~-r~~~----r----r----'-----'
'25~---+----~----r----+----~----i

~ ,00~~-+--~~~--~---+----4---~

. ti·
WI

iil

}

75

5°r--t---";D-~::--r:-~b"'Tl

-1.5

I_M

1-

4 5
.

·-8.01-----+-----+-----+-----j------i

25~---+----~----r----+--

~~'2~5~--~'OO~----~75~---~50~--~----~---J25

glll(mS~ CONDUCTANCE

9.o(mS), CONDUCTANCE

OUTPUT ADMITTANCE (yob) vs. FREQUENCY
'O~----~----~-----r~--~~----'

,I
OB

, 2

, 6

2 O.

9ooImS~ CONDUCTANCE

c8

SAMSUNG SEMICONDUCTOR

221

"

NPN' EPITAXIAL'SILICON ,TRANSISttiA
RF. MIXER FOR UHF TUNER
S0T-23

• HIGH POWER GAIN TYP. 17dB
• ,LOW NFTVP. 2.8dB

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Coliector·Base Voltage
Collector-i;:mitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Oissipation
Junction Temperature
Storage Temperature

Symbol
Vcoo
VCEO
VEoo
Ic
Pc
Tj
Tstg

Rating
30
25
4,
20
. 150
150
-55-150

Unit
V
V
V
rnA
mW
°C
DC

1, Base 2,

EmiU~r

3, CoHeetor

ELECTRICAL CHARACTERISTICS (Ta=25 Q C)
Characteristic

Test Condition

Symbol

Collector Cutoff Current
DC Current Gain
Current;Gain Bandwidth Product
Output Capacitance
Noise Figure

Icoo
hFE

Power Gain

Gpb

AGC Current

IAGe

fr
Cob
NF

VCB==25V. IE==O
VeE== 1 OV. 1f>==3mA
VCE==10V. IE==-3mA
f==1MHz. VcB=10V. IE=O
VcB==10V.IE==-3mA
f==900MHz'
1
VCB=10V. IE==-3mA.
f==900MHz,
Gpq AGC=IE 0.1 Gpb-30dB

Min

Typ

60
750

120
,1000
0.6
2.8

14,

Max

Unit

0.1
240

fAA

0.8
4.5

17
-:8

MHz
pF
dB
dB

-11

mA

,

Marking

~
c8

SAMSUNG SEMICONDUcrO~

222

NPN EPITAXIAL SILICON TRANSISTOR

,I;CSC2758

hFe-Ic CHARACTERISTIC

Ic-Vce CHARACTERISTIC
1000
500
200

IE
II!
!i
u

z

..ili~

I

III:>
u

100
50

u

1t

20

I

i

10

\

VceM. COLlECTOR-EMlTTER VOLTAGE

1dmA), COLLECTOR CURRENT

VC£(. .t~c CHARACTERISTIC

VBEl..t~c CHARACTERISTIC

10000

10000
\c=10·le

Ie 10·18

5000

/

20

0

19

0.1 0.2.

Ic(mA~

COLlECTOR CURRENT

10

0.5

20

50

100

IdmA/, COLLECTOR CURRENT

frlE CHARACTERISTIC

Cob-Yea CHARACTERISTIC
0

1-1.

5
2
1
5
2
1
5
0.02
0.01
0.1

lEImA), EMITTER CURRENT

02

0.5

2 3

6

10

20 30 60

,00

Vco(V), COLLECTOIWIASE VOLTAGE

223

KSC2758

,NPN EPITAXIAL SILICON TRANSISTOR
Po-To CHARACTERISTIC

INPUT ADMlnANCE va. FREQUENCY

30c

-20

I

-40

.......

f

r"- r-....
........

'f'..
, 25

50

75

-60

I

,

-eo
........

100

.........
125

Tal'C), AMBIENT TEMPERATURE

REVERSE TRANSFER ADMlnANCE

or-~VL~F~RE~Q~U~E~N~C~Y~__~~____~__~

-100

0

eo
glb(mS~

120

160

200

CONDUCTANCE

FORWARD TRANSFER ADMITTANCE
-::;:::p__;::;:c.....,;~i:'"1

100 ,...;,;VS;;.'.;,.FrRE;;;.Q;;;.U;.;E;;;.N;.;CrY__

-1,5 t----j------"=:'=-T-"-'=---+-..".~

2

1-

30

f

-46 r - - - j - - - t - - - t - - - j - - - - I

I
-6,0t-----T---r_---j-----j-----j

-7.:L,~,0---..,01..,8,....---.JOI..,.,....---.JO-4----..I0-,2--....I
.'~. 't,'.'

g.o(mS~

CONDUCTANCE

OUTPUT ADMlnANCE va. FREQUENCY

-~2~O~0---~15~0,....---~1oo~---~~~--~--~50
g,.(mSI. CONDUCTANCE

INPUT AND OUTPUT REFLECTION COEFACIENT
.... FREQUENCY

10r-----,------;-----T------r-----,
yob=gob+J)gb
Vcs"",1QV
8t-----4-----~----_+------r_-----j

.~

i

J
gob(mS~ CONDUCTANCE

c8

SAMSUNG SEMICONDliCTOR

224

KSC2758

NPN EPITAXIAL SILICON TRANSISTOR

FORWARD INSERTION GAIN ... FREQUENCY

REVERSE INSERTION GAIN ... FREQUENCY

90'

180'1---+-t---+-E

•

900 MHz Gpb, NF TEST CIRCUIT

lsl--~~---+--~~+-+----+---;

II!

5

.

'0~--4-----+----~--4----+---;

a !
Ii:
4

I

I

rI
i

S

0

-sl---4--

-101~---+---+----t----4----f~~
-lSiL-__~__~____~__~__~~~
o
-2
-4
-6

l,(mA), EMITTER CURRENT

..

.cR

SAMSUNG SEMICONDUCTOR
.

225

KSC2159
t

. 't )

:NPN:EPlTAXIAL :SILICON TRANSISTOR·

t

MIXER,OSCILLATOR FOR UHF TUNER·
S0T-23

. ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Rating

·Unit

30
14
3
50
150
150
-55-150

V
V
V
mA
mW
·C

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storag·e Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

~C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector Cutoff Current
DC Current. Gain
Current Gain Bandwidth Product
Output Capacitance
Conversion Gain

hFE

Test Condition
VCB= 15V. IE=O
VCE=10V.lc=5mA
VCE=10V.lc=-5mA
VCB=10V. IE=O. f=1MHz
VcB =10V.IE=-5mA
fAF =900MHz. fosc=935MHz
115dl3jl

ICBO
hFE

fr
Cob
Gcb

Min

Typ

Max

Unit

100

0.1
180

IJA

40
1.5

1.3

GHz
pF
dB

2
1
12.5

10

Marking

CLASSIFICATION

Classification

R

0

Y

hFE

40-80'

60-120

90-180

H6D

hFE grade

t

c8

.
SAMSUNG SEMICONDUCTOR

KSC2759

. NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

20

.......

~
~
I- ~

.....

6

DC CURRENT GAIN

- \ ~~,lo,.A

-180

P;1.=',6cJ

Vc£-10V

PC~'50~W

14 0

~

'~-lo,.A

2

120

..

la 10o"A

U

I.=S'\"A

100

~=6~A

r

.~

IB=4o,..A_

'V

I

V

1

l

B "

1111

160

0

r--

i.-"
./

0

"=2I"A- r0
16

12

10

20

V.,.(V). COLLECTOR-EMlnER VOLTAGE

IdmA~

BASE-EMITTER ON VOLTAGE

50

100

COLLECTOR CURRENT

•

POWER DERATING
200

20

16

IB
a:

30

12

IJ

~

150

i

100

a:

i

i

4

0.2

0.6

/

\,
I\.

\

1\,

50

1\

J
25

1.0

.06

Vae(V). BASE-EMITTER VOLTAGE

50

75

100

\

125

150

175

200

T.('C). AMBIENT TEMPERATURE.

COLLECTOR. OUTPUT CAPACITANCE

CURRI;NT GAIN - BANDWIOTH PRODUCT

10

10000
f 1MHz

Vee= 10V

t;

1
~
1100
500

0
~

S3000

~

,

1

VV

0

1/

"!Z

1

5

0

50

'Ii 300

03

J
1
'0

30

50

Vca(V). COLLECTOR-BASE VOLTAGE

c8 SA~SUNG

SEMICONDUCTOR

100

100
:-1

-3

-5
IdmA~

10

- 30 - 50 - 100

EMITTER CURRENT

'227

,KSC2:759,

NPN EPITAXIA~ SILICON TRANSlsroFJ
REVERSE TRANSFER ADMITIANCE (Yfb)
vs. FREQUENCY

INPUT ADMITTANCE (yib)
¥s. FREQUENCY
0

3

--

;

~-3mA [ '

~

",.
V
- ~,r«' ..... l><, ,

... 40

,

s!nA

1000
MHz

~~

-60

1-

'
'~ 1/.' '
N
'20 f-MHz- 60u
r---MHz
'

"',

100 MHz

'" ,

200MHz

~
~-- )- - )
100OMH~
-~ ---~-~
'amA

'" , , , rnA
10

,
\.

4QOMHz~

,.1

~C

600MHz

IE~3mA

MHz

/200MHz

4QOMHz

-9

-160

Vce=1OV

VOE.-10V

-200

a

~

1~

M

1~

200

-1 2

240

o

-0.2

0.2

0,4

0.6

0,8

Qlll(mS~ CONDUCTANcE

g/O(mS), CONDUCTANCE

OUTPUT ADMITIANCE (yob)
vs. FREQUENCY

FORWARD TRANSFER ADMITIANCE (yfb)
¥s. FREQUENCY

16r-----~------~------------,

~r--------r---r--~---.----'

Vce=10V

250~---'----~----+----1----~--~

200~---r----t----+--~t----+----i

iii: 1501---+---+1"'-:~~[A~-----I
400~
Hz

i
f!

/ r, 200MHz .'

IE""'10mA /

100

1'-

\

'MHZ,"

100

600 Hz

LL'

:

\\, !II:I,.

I

.#

800t,1Hz

l .... ~\'.1:

" , _-

/ \ \ / r-

..!i!

12
IE~3mA

I

8

t

0~--~---4~,~~~~t----r---1

~;.I..,IV

t.J

3mA

~3~0~0----2~4~0----~18~0~~'~20~--_760~--~0~--~60
g/O(mS), CONDUCTANCE

51" Su Va I

0.4

0.8

-1.2

goll(mS), CONDUCTANCE

SaI,vs.1

180' t---t--;---ir-_±:

c8

SAMSUNG

~EMICONDUCTOR

228

KSC2759

NPN EPITAXIAL SILICON TRANSISTOR

Gcb VB. OSC LEVEL
25

RF\OOt.1~Z, 7JdBm';
local. 935MHz
Vce -,1DV

20

~

z
S!

.;'"

8

!

15

..... ~

0

5·

L

"

V

0
100

110

120

(dB,J500), OSC LEVEL

Gcb TEST CIRCUIT
150pF

f f

lDDOpF

RF IN, 50U

Olr---__

+B(10V)
RF=900MHZ 75dBJoI
Local 935MHz 115 dB",
IE=5mA

c8

SAMSUNG SEMICONDUCTOR

~

L1L2

('f-J--~)I!-T mm

I.

19 mm

,

229

NPN EPITAXIAL,SILICON TRA~Slsroa
AUDIO FREQUENCY LOW NOISE AMPLIFIER
10-928

• Complen1ent to KSA1174

ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
IB
Pc'
Tj
Tstg

Rating

Unit

120
120
5
50
10
300
150
-55-.150

V
V
V
mA
mA
mW
°C
°C
1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta ~25°C)
Characteristic

Symbol

Col,lector Cutoff Current
Emitter Cutoff Current
DC Current Gain

ICBO
lEBO
hFEl
hFE2
VBE (on)
VCE (sat)

Base Emitter On Voltage
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance ,

Cob

Noise Voltage

NV

fr

Test COndition
VCB=120V.IE=0
VEB=5V. Ic=O
VCE=6V. Ic=0.1 mA
VCE=6V. Ic= 1 mA
VCE=6V.lc=1mA
Ic=10mA.IB=1mA
VcE =6V.IE=-1mA
VCB=30V. IE=O
f=1MHz

Min

Typ

Max
50
50

150
200
0.55
50

580
600
0.59
0.07
110
1.6
. 25

1200
0.65
0.3

Unit
nA
nA

2.5

V
V
MHz
pF

40

mV

hFd2) CLASSIFICATION
Classification

P

F

E

U

hFE (2)

200-400

300-600

400-800

600-1200

c8SAMSUNG SEMICONDUCTOR

230

KSC2784

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

10

STATIC CHARACTERISTIC
10

la=16j.1A

II"
I-

IB""14j.1A

08

!J

if!a:
a:
:::>
u
a:

~-12'"

IJ. ~

~

a:
a:

:0

0.6

U

a:

g

Ie a,..A

u

~
~
V

1
:Xi

Z
W

~~'0'"

~/ ....

g

u

la!alolA

g

-

U

/.

.,.",

",.

...... ......
......

0,4

E

Ji
02

~

---

600

r\
1\

~

I I

~

~

~

=,'

en

0.5

~

03

~

0.03

0 1

3 5

0.3 0.5 1

10

Vse (sat)

0, 1
VeE (sat)

001

3050100

0,1

COLLECTOR CURRENT

03 0.5

3

5

10·

30 50

CURRENT GAIN-BANDWIDTH PRODUCT

COLLECTOR OUTPUT CAPACITANCE
10

~~1'!..~

VeE 6V
I-

S

OK
3K

I

1K

!
"

300

I

~ 500

I

1:1'

50

~

30

10
-0.1

-

-

...

r--

.... r-- ..

0.5

o.3

-0.3 0.5

3

5

-10

30 50

l,(mA), EMITTER 'CURRENT

c8

"""-

~

S

,/

a: 100
:::>
u

l:

100

lc(mA), COLLECTOR CURRENT

10K

I

•

.J003
lc(mA~

U

100

Ic=1O'/a

<>,
! 005

100

o

I

1~-02~
I I

!

'200

0.01

I'B-O,~'"

~ I--

Pulse Test

i

700

300

H'B-O,B"A

!:i
~

801)

.J

-r-r

10

j,VCE""6~1
Pulse Test

900

400

0

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

1000

500

1-

f.- f-""" "1'
I--' IBIO 8"j
1".....0-- f.-

V.ElV), COLLECTOR.£MlnER VOLTAGE

DC CURRENT GAIN

8

II

0

Vce(V), COLLECTOR·EMITTER VOLTAGE

I
I

I I

",-12""

10
~

!

-

_.
......

.,...,.. '"

I,

" , la=1 4j.1A

-- --

1-

~

IB=2~.

'/

i""'"

~
Is""4j.1A

~

L'

I-

."..

SAMSUNG SEMICONDUCTOR

- 100

0.1
10

30

50

100

Vcg(y), COLLECTOR-BASE VOLTAGE

231

"

. NPNEPITA>CIAL SILICON TRANSISTOR

KSC2785

'0

AUDIO FREQUENCY ·AMPLIFIER
HIGH FREQUENCY OSC.

TO-92S

'. Complement to KSA1175
.• Collector-Base Voltage Vcao=60V
• High Current Gain Bandwidth ProduCt h =300MHz (l\tp)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
;~

Rating

VCBO
VCEO
VeBo
Ic
Pc
Tj
Tstg

Unit·
V
V

60
50
5
150
250
150
-55.,.150

V
mA
mW
°C
°C

1. Emitter 2. Collector 3. Base

.

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

BVceo
BVceo
BVeBO
ICBO
leBO
hFe
Vce (sat)

Ie =100pA, Ie =0
Ic =10mA, IB =0
Ie =-10pA, Ic=O
Vce =40V, b =0
Vee =3V, Ic =0
Vce=6V,lc=1.0mA
. le=100mA, le=10mA
Vce =6V, Ic ";10mA
VCB=6V,le=O
f=1MHz
Vce=6V,le=-0.5mA
f=1KHz, Rs =5000

Collector-Base Breakdown Voltage
Collector-Emitter Breakdowl) Voltage
Emitter:Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sl\turation Voltage
Current-Gain-Bandwidth Product

h

Output Capacitance

Cob

Noise Figure

NF

hFE

Min

Typ

Max

60
50
5

70
0.15
300

0.1
0.1
700
0.3

Unit
V
V
V
pA
pA
V
MHz

2.5

pF

4.0

dB

..-

CLASSIFICATION

Classification

0

y

G

L

hFe

70-140

120-240.

200-400

350:700

c8

SAMSUNG SEMICONDUCTOR

232

·KSC2785

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

TRANSFER CHARACTERISTIC

100

100

-

f--

11"400"AJ

~ P .. 1a-3SO,.A
~ '....../ - 1.-3OO,.A
110250,..
t~

80

~V~

Y

V- I--

-

-Ve.-fN

I

.1B_1~ -

I

..-

1.-100,..

,--f-

r--I!F
4

-

-

II

il_~

Y-

20

30

12

18

I

-

..
0.1
20

1.0

D.4

0.2

YCIIM. COU~ITTER_TAGE

YaM. IWIE-EMITTER_TAGE

DC CURRENT GAIN

CURRENT GAIN BANDWIDTH PRODUCT

f--

I-VCE_fN

1.2

Vce,.fN

V

=

r--..,

30

10
10

30

100

0.1

300

Ie (mA). COLLECTOR CURRENT

0.3

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

f--

~

30

100

300

1000

Ie (mA). COLLECI'OA CURRENT

OUTPUT CAPACITANCE

~ -1,._0

-!.lMHz

1c-101B

rlZ

10

!

Vee (sal)

V

3

~

S

10

0.3

Vet; (sat)

II III
10

30

100

300

Ie (mA), COLLECT

5

U
:!c

1
-b..

05

~

I

.,.

02

/-@•

01

i

0.05

I

002

1-1-·

r-,.---

f--- 1-. --

50

100

001
10

20

100

50

200

~O

1000

Ic(mA). COLLECTOR CURRENT

FORWARD TRANSFER ADMITTANCE (yIe)
va. FREQUENCY

1000.~m1
VCE,,",6

~o

!is
jli:
"'

200

i
8

100

n

...

50

U

v

~1~

. ........
,

20
-bfe

",

10

1

\~0----2~0~~-5~0·:~!'~1·00-----200~~·5-00~~'UJOOO
QMHz), FREQUENCY

24

1-100 MHz

J

12

f
6

100
VCE=6

lc'"'1.0

0

2

~

I
0
5_

15

f.
l 0
5

1/

0.

11

2

J

1 F-'--.-'
0.5

t--

~

'"

:/

I~/

'"

~.

~F-

NF

_.

21--0
-0.051-0.1

o. 1
-03
l~mA).

c8

vl;l

0

Gpo......
20

I

III

INPUT ADMITTANCE (yle)
va FREQUENCY

5.

1,6 ~
i

~l;l. V.!

0,

20

;

QMHz), FREQUENCY

POWER GAIN AND NOISE FIGURE
vs EMITTER CURRENT

-1

EMITTER CURREI

SAMSUNG SEMICONDUCTOR

-10

10

20

50

100
~MHz),

200

500

1000

FREQUENCY

237

KSC218S·

. . NPN EPitAxiAL SiliCON TRANSISTOR
100MHz 0 .... ~ TEST CIRCUIT
OUTPlIT
0.01 "F
SOD O'~-f~--.---I

·c8SAMSUNG SEMICONDUCTOR

SOD

... 238

NPN EPITAXIAL SILICON TRANSISTOR

KSC2787

.. r." .... ;.

FM/AM RF AMp, MIX, CONY, OSc, IF
TO-92S

• Collector.Base Voltage VCEO= 30V
• High Current Gain Bandwidth Product fT =300MHz (~p)
• Low Collector Capacitance Cob: 2.0PF (~p)

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

Vcso
VCEO
VEBO
Ic
Pc
Tj
Tstg

50
30
5
50
250
150
-55-150

V
V
V
rnA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

1. Emitter 2. Collector 3. Base .

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Symbol

Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance

BVcBO
BVceo
BVeBO
IcBO
. leso
hFe
VSE (on)
VCE (sat)

h
Cob

Test COl'ldition
Ic =10pA,le=0
Ic =5mA, Is =0
Ie = -10pA, Ic =0
Vcs=50Y,le=0
Vee =5V, Ic =0 .
. VCE=fN, Ic=1mA
VCE=fN,lc=1mA
Ic=10mA,le=1mA
VcE =6V,lc =1mA
Vcs=fN, f=1MHz

hFE CLASSIFICATION
Classification

R

0

y

hFe

40-80

70-140

120-240

c8 ~AMSUNG

SEMICONDUCTOR

Min

~p

Max

\J

50
30
5

40

150

Unit

0.67
0.08
300
2.0

0.1
0.1
240
0.75
0.3
2.5

V
V
pA
p.A
V
'V
MHz
PF

·KSC2787

NPN·EPITAXIAL SILICON TRANSISTOR
STATIC CHARACl'ERISTIC

BASE-EMITTER ON VOLTAGE

10._

14

f

- v .IN

1••eo,;A

,

V

I•• so,..o.

I""
1••1••30""

I""
IB-2O,.A.
1••10pA

,.....
12

20

16

02r---+--+---t-,I--t----t---j

24

".. 1Yl,IIA8E-EMITTER 1/OLTAGE

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
10

10000

500

le·l0

I- rVa;-

.-

300

Vae!

f--

"""
V

30
CE sat)

0.1

0;3

'"''!Ill

om

10

o.s

3510

3050

100

0.1

3

Ie (mA), COLLEC:IOR CURRENT

5

30

10

Ie (mAl, COlLECfOR CURRENT

COLLECTOR INPUT CAPACITANCE
COLLECTOR OUTPUT CAPACITANCE

CURRENT GAIN-BANDWIDTH PRODUCT
1000

t-

r' .

V

r--.

~t""

t- t-!.'
It.
./

l"-r--

V

Cob

1

0.1

10
0.1

G.3

o.s

1

2

10

20

Ie (mAl. COLLECTOR CURRENT

c8

Cib

SAMSUNG SEMICONDUCTOR

50

0.1

D.3 0.5,

1.0

3

5

10

30 60

100

Yea 1Yl, COl.LEC1Ofl.BASE 1/OLTAGE

240

NPN EPITAXIAL SILICON TRANSISTOR

KSC2859

LOW FREQUENCY POWER AMPLIFIER
80T-23

• Complement to KSA1182

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcso
VCEO
VESO
Ic
Pc
Tj
Tstg

Rating

Unit

35
30
5
500
150
150
-55-150

V
V
V
rnA
mW
°C
°C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =2.5°C)
Symbol

Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance

Vce(sat)
VBE(on)

hFE

fr
Cob

Test Condition
VcB =35V, IE=O
VEB =5V, le=O
VeE=1V,le=100mA
VeE =6V, le=400mA
le= 1OOmA,.IB= 1 OmA
le=100mA, VCE=1V
le=20mA, VcE =6V
VcB =6V, IE=O
f=1MHz

Min

Typ

70
25
0.1
0.8
300
7

Max

Unit

0.1
0.1
240

,..A
iJ A

0.25
1.0

V
V
MHz
pF

Marking

CLASSIFICATION
Classification

0

y

hFE

70-140

120-240

hFE grade

c8 SAMSUN~

SEMICONDUcroR

241

NPN EPITAXIAL ·SILICON TRANSlSI'OR

··KSC2859\·

BASE-E.rm.. ON VoLTAGE

STATIC CHARACTERISTIC
100

50

45

IB-r:J.
IB-o!OO,.A

,

Vce-1V

I
I
,'·i~

eo

IB-35O,oA

I

..

I

I

Reo

'.-~
,

~-

-.

I.J200,.I\_ I--

I I
f-I
IB_loopA f--I

_1B-15OpA __

i
I
10

!
o

I~

1
II

2Q

.ITi~

..J

0

o

1

9

0.2
Cl.4
08
08
v..(V).-..TTO _ _ _

0

10

COLLECI'OR OUTPUT CAMClTANCE

DC CURRENT GAIN
2Q

1000

500

I--

1.0

1~!lJ

Vce_1

300l
10

f-

K=

"

i"'-.. ......

3

5 . 10

30 50

100

300 500

1000

3510

30

50

100

300

v.. (V).~VOI._

Ie (mAl. COLLECIOII 0 0 _

BASE-EMmER SATURATION VOLTAGE
COLLECI'OR-EMITTER SATURATION VOLTAGE
10

-

Ie_ Ole

v.....)

.
...

I

Vee (

)

I

..

0.111
(II

III
Q3

OS .

3

5

10

30 50

100

Ie (mAl. COI,LECIOR oolIRENT

c8

SAMSUNG SEMICONOUClOR

... 242

KSC3120·

NPN· EPITAXIAL SILICON TRANSISTOR

MIXER FOR UHF TV TUNER
S01-23

Gc£=17dB (TYP)
Cre=O.6pF (TYP)

ABSOLUTE MAXIMUM RATINGS (Ta.=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voitage
Collector Current .
Base Current (DC)
Collector Dissipation (T.=25°C)
Junction Temperature
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Is
Pc
Tj
Tstg

Rating

Unit

30
15
3
50
25
150
125
-55"'125

V
V
V
rnA
rnA
mW
°C
°C

I

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain Bandwidth Product
Reverse Transier CapaCitance
Conversion Gain
Noise Figure

Symbol
BVcEO
ICBO
IESO
hFE

h
Cr.
Gee
NF

Test Condition
Ic=1mA, Is=O
VcB =30V, IE=O
VEs =2V, Ic=O
VcE =10V, Ic=5mA
VCE=10V,lc=2mA
Vcs=10V, IE=O, f=1MHz
Vcc=10V, Ic=2mA
f=800MHz, fL =830MHz .
Vcc=10V, Ic=2mA
1=800MHz, IL =830MHz

Min

Typ

Max

15

40
1500

12

100
2400
0.6

0.1
1
200
0.9

Unit
V
/AA

IJ.A
MHz
pF

17

dB

8

dB

Marking

.~
c8

SAMSUNG SEMICONDUCTOR

·243

KSC3120

NPN EPITAXIAL SILICON TRANSISTOR

DC CURRENT. GAIN

CURRENT GAIN BANDWIDTH PRODUCT

10000
50aO

~

2000

f

i

10000

i~

200

a:
a: 100
u
50

"

U

"
,j

20000

%
l-

1500

.

VeE- 10V

slfooo

0

1000

,"Ii

100000

Vee" 10V

5000

I-

201l?

i

1000

Z

20

B
'If
i

10

600

~

200

,2
0.1

0.2

0.6

1

100mA~

2

5

10

100
0.1

50- 100

20

0.2

COLLECTOR CURRENT

0.6

Cr.Vcb CHARACTERISTIC

.,t

i

150

1'20

§

0.1

o.05

90

"

'\

30

0.2

0.5

1

2

5

10

20

50

'\
25

100

50

75

OSC LEVEL

'L""830MHz-

23

z

20

"
~

20

'16

a:
~

z

16

~

Z

ill

L

Z

12

Vee

/

b..

I""-- ~

~

2.

...... ~

u
12

1

"

I-

1/V

0

i

1QV

fRF"",aOOMHz
fL=B3OMHz

28

z

if

150

Vee- 1OV
fFlF-800MHz

C

u

125

32

28

0

100

To(·C), CASE TEMPREATURE

Gc.... CHARACTERSTIC

iii>

200

I\.

60

O~02

32

0

175

I\.

Vco(V), COLLECTOR-BASE VOLTAGE

..

100

~ 180

05

0.0 1
0.1

50

210

~ 0.2

~

20

IE-a

r- i-

I

'1

10

240

t-1MHt

I:

5

POWER DERATING

100
50

1

Ic(mA), COLLECTOR CURRENT

1

/

I
o
4
Ic(mA), COLLECTOR CURRENT

c8SAMSUNG SEMICONDUcrOR

-20

-16

-12

-8
(dBm~

-4

0

12

OSC LEVEL

244

KSC3125

NPN EPITAXIA.L SILICON TRANSISTOR

TV FINAL PICTURE AMPLIFIER APPLICATION
50T-23

ABSOLUTE M,AXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
~mitter-Base Voltage
Collector Current
Collector Dissipation
. Junction Temperature
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

30
25
4
50.
150
150
-55-150

V
V
V
mA
mW
°C
°C

• Refer to KSC388 for qraphs
1. Base 2

Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 ° C)
Characteristic
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

Symbol

!

I
ICBO
lEBO
hFE
VCE(sat)
VeE(sat)

fr
Cob

Test Condition

Min

Ic= 1rnA. 1.=0
Vce=dUV, IE=O
VEe =3V, Ic=O
VcE =10V,lc =10mA
Ic=15mA, le=1.5mA
Ic=15mA, 1a=1.5mA
Ic=10mA, VcE =1C V
Vce= 1 OV, I~=O
f=1MHz

25

20

250

Typ

70

600
1.1

Max

0.1 '
0.1
200
0.2
1.5
1.6

Unit
V
uA
uA
V
V
MHz
pF

Marking

c8

SAMSUNG SEMICONDUCTOR

245

;Iltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

25
5
300
300
150
...,55-150

V~
Ie
Pc
Tj
Tstg

rrfN

OC
°C
1. Emitter 2: Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C) .
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage

BVceo
BVcEO
BVEBJ:)
ICBJ:)
lEBO
hFE
VCE (sat)

Test Condition
Ic = 100,..A, IE =0
Ic =10mA, Ie =0
IE=-10,..A,l c =0
Vce =25V,IE=0
VEe =3V,lc=O
VcE =1V,lc=50mA
Ic=30~tnA, le=30mA

Min

lYP

Max

30
25
5

70
0.14

0.1
0.1
400
0.4

Unit
V
V
V
pA
pA
V

hFE CLASSIFI~TION
Classification

0

y

G

hFE

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUCTOR

248

KSC3488

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

50

BASE-EMITTER ON VOLTAGE
100

I·-i~l

•• 400",,-

45

V-

VCE=1V

I
I

.

IB_35OpA

ii

'Tj
f-

II:
::J

U

I.=..b""

I--

I.J200~_ t-I I
rI
IB-100,.A
rI

10-150",,_
10

80

60

I1

40

.Ii

20

~-- f--

'"1 150

o

o

9

./

10

lOOO,§I"'_

0.2

v .. M. BASE·EMITTER IIOLTAGE

Vee M. COLLECIOR-EMITTER VOLTAGE

DC CURRENT GAIN

r--

500
300,

CURRENT GAIN-BANDWIOTH PRODUCT

I

1000

VCE=1V

Vc -

1---

~

__~-U~~~-L~~
10
30 50 100
300500 1000

lL--L~~~

1

3

5

...

t":-

r-

10
1

30

10

50

100

Ie {mAl, COLLECTOR CURRENT

Ie (mA), COLLECI'OR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE
20

10

I--

1.0

Q.8

OB

i:)J

Ic=101B

10

1

Vee sat}

"
l'..

;

I........... .......

11
Vee sat)
I

1

Q.3 OS

3

5

10

. 30 50 100

Ie (mA). COLLECI'OR CURRENT

c8

;

1

0.01.

SAMSUNG SEMICONDUCTOR

10

30

50

100

300

Yea M. COLLECI'OR-IIASE VOLTAGE

249

.,

K8D227··

'

NPNEPITAXIAL SILICON ·TRANSISTOR
.'.

LOW FREQUENCY POWER AMPLIFIER
TO-92

• Complem~nt to KSA642
• Collector Dissipation Pc =400mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Cbaracteristlc

Symbol

Rating

Unit

VCBQ
VCEO
VEao
Ic
Pc
Tj
Tstg

30
25
5
300
400·
150
-55-150

V
V
V
IT)A

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

mW
OC
°C
1. Emitter 2. Base 3. Coilector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
,Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current .
DC Current Gain
Collector-Emitter Saturation Voltage

hFE

BVcBO
BVcEo
BVEBO
ICBO
lEBO

hFE
VCE (sat)

Test Conditions

Min

Ic =100,A,IE=0
Ic=10mA, le=O
IE=-10,A,lc=0
Vce=25V,IE=0
VEe=~ Ic=O
VCE=1V,lc .. 50mA
Ic -300(TIA, Ie .. 30mA

30
25
5

1\'p

Max

UnH
V
V

70
0.14

0.1
0.1
400
0.4

V
,A
pA

V

CLASSIFICATION

Classification

0

V

G

hFE

7()"140

12()"240

200-400

qs·SAMSUNG SEMICONDUCTOR

250

KSD227

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

00
45
40

'B-io.~l

,
,

BASE·EMmER ON VOLTAGE
100

IB=400,.A

II'"

VCE_W

I
I
IBj300j

IB_350pA

i:

I

IB=25b,.A

I:i

:JoJ200",\_ r--

I I

ls'l00r- r--

15

II

IB=100pA

10.

I

r-

,}"OOt

LJ

0.

0.

9

10.

_

Vee (V). COLLECfOR-EMITTER VOLTAGE

DC CURRENT GAIN

1ooo,m_ _
000 _

300,

Q8

D.6

0.2

1.0

(VI. BASE-EIIITTER VOLllOGE

CURRENT GAIN-BANDWIDTH PRODUCT

•

1000

VCE_W

v

r-----

=

.......

,.,. ....

r-.

10.
3

5

10

30 50

100

300000

30

10.

1000

00

100

Ie (mA~ COLLECfOR CURRENT

Ie (mA), COLLECTOR CURRENT

'BA,SE-EMITTER SATURATION'VOLTAGE
cd'LLECTOR-EMITTER SATURATION VOLTAGE
10.

COLLECTOR OUTPUT CAPACITANCE
20

5

r-

ir:!lJ

Ie ",,101e

10.

1

Vee 881)

"

,

i"""-- r--.

,11
VCE{sat)
~

1
0.,01
0..3 0..5

3

5

10

30 50 100

Ie (mA,. COLLECTOR CURRENT

c8

SAMSUNG SEMICONDlJCTOR

3

5

10.

30

50

100

300

Vca(VI. COLLECfO~E VOLTAGE

251,

KSD261

NPN EPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY POWER AMPLIFIER
TO-92

• Complement to KSA643
• Collector Dissipation Pc=500mW

ABSOL1JTE MAxiMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

40
20

V
V
V
mA
rWN

COllector-Base Voltage '
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
'Collector Dissipation
Junction Temperature
Storage Temperature

5
500
500
150
-55-150

OC·
°C

1 Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage

Test Conditions
Ic=l00pA,IE=O

BVcBO
BVcEO
BVEBO
ICBO
lEBO
hFE
VCE (sat)

Ic=:10mA,IB=0
IE=-100pA,le=0 .
VCB=25V,IE=0
VEB =:r.t, Ic"O
VCE=1V,lc .. 0.1A
Ie =O.5A, IB =O,OSA

Min

~p

Max

Unit

V

40
20
5.

40
0.18

0.1
0,1
400
0.4

V
V
pA
pA
V

hFe CLASSIFICATION
Classification
hFE'

c8

R
. 40-80

0

Y

G

70-140

120-240

200-400

SAMSUNG SEMICONDUCTOR

252

KSD261

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTE"ISTIC

BASE-EMITTER ON VOLTAGE

500
450

.. J.omA

J.
--IB_1.6mA
, ,

~..... r-

.

'/V

50

1
-"B_1.8mA

30

t-- I- Vce - 1V

1

~

I

la-lAmA

y

IB-1.2mA

l

IB'l~mA
Ie_J.smA

100

IB-,o.j

1/

la.OAmA- r-'-

1

I

1

"i ..o.2jA- f--

50

0.1
3

9

4

10

o

II
0.2

VCE (VI. COLLECIOII-EI/lTTER lIOLTAGE

1.0

0.8

0.8

1.2

-(y). _ITTERWL_

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
,

1000

10
.. ~

500 f-- t-VCE_1

t--

300

le_!O

,

,

"

.'

:J UI
11

1

(101)

,
, Z
,i

:/-::;:::;

t==

,

Ii
,3

10

5

30 50

I1111

100

300 500 1000

3, 5

10

30 50

I

100

Ii

!ili'

300 500 1000

Ie (mA). COLLECTOR CURRENT

Ie (mA). COLLECTOR CUIIReNT

COLLECTOR OUTPUT CAPACITANCE
100

50

1MHL
I---f'E-O

30

j-.....

t-t--

1

10

30

50

100

Vea (y). COI.LEC1OfI.IIASE WLTAIlE

c8

SAMSUNG SEMICONDUCTOR

253

. KSD471A'

NPN EPITAXIA'LSILICON TRANSISTOR,

','-

AUDIO FREQUI;NCV POWER AMPLIFIER
. T0-92

• Complement to KSB564A
• Collector Current Ie =1A
• Collector Dissipation Pc =800mw

ABSOLUTE MAXIMUM RATINGS (Ta =25.oC)
Characteristic

Symbol

Collector-Base VOltage
Collector-Emitte( Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VC&)
VCEO
VE&)
Ic
Pc
Tj.
Tstg

Rating

Unit

40
30·
5
1

V

V
V
A
mW
°C

800

150
-55-150

OC
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage'
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain'
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Band width Product
. Output capacitance .

Symbol

Teat Conditions

Min

BVCfM)
BVCEQ
BVE&)
Ic&)
hFE
Vce (sat)
VBe (sat)

Ic=100"A,IE=O
Ic=10mA, IB=O
IE= 100"A, Ic =0
'VCB =3OV, IE =0
VCE=1V,lc=100mA
Ic=1A,IB=0.1A
Ic=1A,IB=O.1A
VCE =6V. Ic=10mA
Vca=6tI, IE =0, f=1MHz

40
30
5

h
Cob

lYP

Max

UnH
V

V
0.1

70

V
pA

400
0.5
1.2
130
16

V
V
MHz
pF

hFE CLASSIFICATI()N
Classification

0

y

G

hFE

70-140

120-240

200-400

.. 254. .'.

'. .
~,

KSD471A'

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

DC CURRENT GAIN

-i --)..~rMJ.

lD
G.9

v:.....:::::
~
v::i"""'

1000 _ _ _
500 I - - VCE.1Y
300

la*4.6mA

~i~~4.0~

IB ... 3.5mA
la-3.OmA

I

la_2.5mA

I

~

I

IB-2.omA

If

!a_1.5jA_ . -

IB_:t.-

~
i

0.2
0.1

iB.o.s~

e---

I
o

9

1

3

10

5

10

30 50

100

300500

1000

.Ie (mA), COLLECTOR CURRENT

Veo (V), COll_EMmER VOLTAGE

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

'CURENT GAlN-BANDWIDTH PRODUCT
1000

•

10

f---

Vce_rN
I
"

~l

I I

!'-.

-+

---

-

--

itt±i I
3

5

10

30

50

-

I

-300 500

--

III
3

1000

i: I

5

10

30 50

100

300 500 1000

Ie (mA),·COLLECTOR CUR~T

COLLECTOR OUTPUT CAPACITANCE

SAFE OPERATING AREA
10

100 I

30

VeE(I8I)

-+

Ie (rnA), COLLECTOR CURRENT

50

r-

--

ii,

om
100

~

·VBE (181)

r--f.,MHZ

r - - l . Te=25'C

1--2"Sln~Pt

(E-O

--r-..

-?OOms

1',...
t---

0

r....

~
5
3

ODS
0.03

_0D1

1
l'

10

30

Veo (y), COLLECJOR.BASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

50

100

10

30

-v"' (V), COLLECTOR-EMITTER VOLTAGE

!iO

100

255

KSD1020

PNP EPITAxiAL SILICON TRANSisToR

AUDIO FREQUENCY 'AMPLIFIER
TO-925

• Complement to KSB810 .

ABSOLUTE MAXIMUM RATINGS (T~=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
'Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
• PW

~

Rating

Unit

30
25
5.0
700
1.0
350
150
..-55",150

V
V
V
mA
A
mW
°C
°C

Symbol
VCBlJ
VCEO
VEeo
Ie
Ic
Pc
Tj
Tstg

10 ms, duty cycle

~

50 %

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
Characteristic
Collector Cutoff Current
El1litter Cutoff Current
• DC Durrent Gain
• Base Emitter Voltage
·Coliector·Emitter Saturation Voltage.
• Base-Emitter Saturation Voltage
Output CapaCitance
Curre~t Gain-Bandwidth Product
• Pulse Test:

PW~350

Symbol

. Test Condilion

ICBlJ
IEBlJ
hFEl
hFE2
VBE
VCE(sat)
VeE(sat)
Cae

VcB=30V, IE=O
VEB=5V, Ic=O
VcE =IV, Ic=100mA
VcE =IV, Ic=700mA
VcE =6V,lc=10mA
Ic =700mA,IB=70mA
Ic=700mA, le=70mA
Vce =6V; IE=O, f=IMHz
VcE =6V, IE= -10mA

fr

Min

70
35
600

50

Typ

200
140
640
0_20
0_95
13
170

Max

Unit

100
100
400

nA
nA

700
0.4
1.2
25

mV
V
V
pF
MHz

lAs, Duty Cycle ::;. 2% Pulsed

hFE(1) CLASSIFICATION
Classification
hFdl )

,c8

0
70-140

y

G

120-240

200-400

SAMSUNG SEMICONDUCTOR,

256

NPN EPITAXIAL SILICON TRANSISTOR

KSD1020

DC CURRENT GAIN

STATIC CHARACTERISTIC

° I""l - t-

IB

8

lr

6

:.- ....

-

4

J l
14oJol

~r-

a

500

I I

VCE=1V

300

IB=120~

I

IB=rOIAA t - -

,,/

2

1000

-

~. 18- 8O"A

Il

"......
8

1'-;60"A

-

~

6
IB=jOIAA

4

1,_12O"A
2

I

a

t
3

50

40

30

20

10

5

10

BASE-EMITIER SATURATION VOLTAGE
COLLECTOR-ENiITIER SATURATION VOLTAGE

~ 3000

r-

VeE 6V

z

300

§.

~=

tOO

50

10

II
30

100

300

1000 3000

lc(mA), COLLECTOR CURRENT

c8

ffi

10

i

II

"
to

100

~

Veilsitl

30

........

e~

I:

VBE(sat)

~ 500

~

10000

50a

g:

Q 1000

>
.;

3000

8300

!;[

,.

1000

CURRENT GAIN-BANDWIDTH PRODUCT

t;

Ic":'1101~

o
>

~"'

300

100a

10000

w

30 50 100

le(mA), COLLECTOR CURRENT

V"'(V), COLLECTOR-EMITTER VOLTAGE

SAMSUNG SEMICONDUCTOR

10000

10

30

100

300

1000

3000

10000

lc(mA), COLLECTOR CURRENT

257

K$D1021

~.: NPN EPITAXIAL SILICON TRANSISTOR

... ,j

AUDIO FREQUENCY POWER AMPLIFIER

TO-925·

• Complement to KSB811
• Collector Current Ic=~A
• Collector DIssipation Pc = 150mW

ABSOLUTE MAXIMUM RATINGS (Ta;=25°C)
Characteristic

Symbol

Rating·

Unit

Vceo
Vcs:J
VEBO
Ic
Pc
Tj
Tstg

40
30
5
1
350
150
-55-150

V
V
V
A
mW
OC
OC

Collector-Base ~Itage
. Collector-Emitte{ Voltage
Emitter-Base Voltage
Collector Current
ColI~or Dissipation
Junction Temperature
Storage Temperature

1. Emriter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter BreakdoWn Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voitage
Current Gain-Band width ·Product
Output Capacitance

BVceo
BVcs:J
BVeBO
ICBO
hFE
Vce (sat)
V8e (sat)

IT
Cob

Teat Condition
Ic=100,..A,le"0
Ic=10mA, 18.. 0
le=-100,..A,lc=0
Vca -3(11/, le-O
VCE ,·W,lc .. 100mA
Ic=1A,18=0.1A
Ic=1A,IB=0.1A
. Vce=fN, Ic=10mA .
. VCR =fN, Ie =0, 1=1MHz

Min

lYP

Max

40
30
5
0.1
400
0.5
1.2

70
130
16

Unit
V
V
V
,..A
V
V
MHz
~F

hFE CLASSIFICATION
ClasaJlllcation

0

y

G

. hFE

70-140

120-240

200-400

c8

SAMSUNG SEMICONDUCTOR

,

-

258

NPN EPITAXIAL SILICON TRANSISTOR

KSD1021

STATIC CHARACTERISTIC

DC CURRENT GAIN

1.0

1000
; -

0.9

.iii

0.7

-

i

0.4

g0.3
Jl

0.2

~

I

_ _""'--!-I~~2.5mA

i
--1--

IB=2.omA

I

4.

I

-r-'B
f'.._--_-.....--......-f'·:'·~mA---'-­
IZ

I:

--

----r--t+r -

I
1L-_____.....__..........;::;'.=0.5!"A

3

10

5

10

I
100

II

iili '

3OO!jlO

1000

CURENT GAIN-BANDWIDTH PRODUCT

BASE-EMITTER SATURATION VOLTACE
COLLECTOR-EMITTER SATURATION VOLTAGE

5

10

30

50

100

300 500

3

1000

5

-10

30 50

100

300 500 1000

Ie (mAl, COLLECTOR CURRENT

POWER DERATING

COLLECTOR OUTPUT CAPACITANCE
500

100

--

450

50 r---!=1MHz
IE=O

c---

z

......

~

.....

400
360

~ 300

r--

~
Ii'
i
!

5

If

\

250

\

\

200
150

\

100

1\

50

\

1

10

30

50

Vea M. COLLECTOR-IIASE VOLTAGE

c8

30 50

Ie: ImA). COLLECTOR CURRENT

Ie (mA), COLLEcroR CURRENT

8

,"

Vee (VI. COLLECTOR-EMITTER VOLTAGE

3

~

I

--'i-I-;"

Iii

!
9

...

I

,

0.1

30

j

--

li!:;i

1 '0

1.5mA

J;.

100

g

'

"0..--...------;- I' -r-~

____...._i-.....

~

, .r

I

I

z

1-· --1--·-~---

.~_....,.._la=a.omA
.1
:

::>
u nB

f-- VCE=1V

300

--+ __ . - 1 . _ - - - 1
I

'"§ v.s

500

L

O.B

II:
II:

8

-I.

SAMSUNG SEMICONDUCTOR

100

'25

50

75

100

125 150

175 200

T. tOe), AMBIENT TEMPERATURE

225 250

KSD1616/1.616A

NPN .EprrAX.IAL .SILICON TRANSISTOR

AUDIO FREQUENCY POWER AMPLIFIER
MEDIUM SPEED SWITCHING

TO-92

• Complement to K SB 1116/1116A

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage

:
:
:
:

Symbol

KSD1616
KSDI616A'
KSD1616
KSD1616A

VCBO
Vceo

Emitter:Base Voltage
Collector Current (DC)
• Collector Current (Pulse)·
Collector Dissipation
Junction Temperature
Storage Temperature
• PWS1.0ms, Duty

VeBO
Ic
Ic
Pc
Tj
Tstg

Rating

Unit

60
120
50
60
6
1
2
0.75
150
-55"'150

V
V
V
V
V
A
A
W
°C
°C

1. Emitter 2. Collector 3. BaSe

Cycle~50%

ELECTRICAL CHARACTERISTICS (Ta =25 ° C)
Characteristic

Symbol

Collector Cutoff Current
Emitter Cutoff Current
: KSD1616
• DC Current Gain
: KSD1616A
.. Bas~ Emitter On Voltage
• Collector Emitter Saturation Voltage
• Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time .
Fa/I Time

ICBO
lEBO
hFe1

Vca=60V, le=O
VEi3=6V, Ic=O
Vce=2V,lc=100mA

hFe2
VaE (on)
Vce (sat)
Vae (sat)
Cob

Vce=2V,lc=1A
Vce=2V, Ic=50mA
Ic=IA,la=50mA
Ic=IA,la=50mA.
Vca=10V, le=O, ·f=IMHz
Vce=2V,lc=100mA

fr
ton
Is

Vcc=.10V, h=100mA
lal =-la2=10mA
VBE (off)=-2",-3V

It

• Pulse Test: PW<;350,..s, Duty

Test Condition

Cycle~2%

Min

135
135
81
600

,
·100

Typ

640
0.15
0.9
19
160
0.07
0.95
0.07

Max

Unit

100
100
600
400

nA
nA

700
0.3
1:2

mV
V
V
pF
MHz

118

,..S

118

Pulsed

hFE(1) CLASSIFICATION
Classification

y

G

L

hFE(1 )

135-270

200-400

300-600

.c8

SAMSUNG SEMICONDUCTOR

260

KSD1616/1616A

NPN EPITAXIAL SILICON TRANSISTOR

STATIC CHARACTERISTIC

STATIC CHARACTERISTIC

100

10
IBlZiOOjolA

r

l

IB"'Y°/oiA I--

80

...z

II!0:

60

0

ti
~
0

~

I

0:

u

~
'i

IB=rO~

E

Ji

'1/ V

08

VI V
V

g

.I

i

r!J '/

0:

'B=lOfAA
40

08

,:..
Z
w

if

le=200j.!A

::>

u

~V
V
!J. /.. . ,.., ~

le-5.0mA
le=4 SmA

04

"=~Om~

18""35mA

,J5JI

:.-~

.-.. ,.-

-

,,=~ Om~

IB=l.~AI~

r

~

. 20

JJ-

02
le=50jAA

L ~

I
10

0.2

VcdV), COLLECTOR-EMITTER VOLTAGE

DC CURRENT GAIN .
10

"~

100

0:

I

30

g

1

i

10

10

•

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

~

50

~

08

Ie 20-.

-

300

!
c

I I

0_8

04

Vc,(V), COLLECTOR-EMITTER VOLTAGE

1000

500

I

I

Is""10mA

-r~~0~1~0~03~0~.0~5~.~071--~03~~10~5~~~~3~5~~10

3f---

i"l
1

1=:::.
05
03

./
i

0 1

005

>

I

-VeE(sat

003

VCE{sat)

c--

II

~

001

---

--

.n0.03005 01

030.5

3

5

10

Ic(A~ COLLECTOR CURRENT

Ic(A), COLLECTOR CURRENT

SAFE OPERATING AREA

POWER DERATING

o. 8
~

\.

...z

~

II!
0:

::>

II

,~

U

0:

I
§

0_5

" !\

03

"

0:

"

0_1

0.05

001

1

10

30

r I
50

100

Vc,(V), COLLECTOR-EMITTER VOLTAGE

c8

\
\.

04

\

\\

2

;;;"'
1i

"

003

\

6

SAMSUNG SEMICONDUCTOR

300

25

50

75

100

125

\

150

175

200

TJ"C), AMBIENT TEMPERATURE

261

KSD1616/16.'t6A J3~~·~{NPN" EPITAXIAL SILICON TRANSISTOR
)

"

.";

'!

) "(tcmtt?

"~

COLLECTOR OUTPUT CAPACITANCE

CURRENT

GAIN~BANDWIDTH

PRODUCT'

1000

~:,~OQ~

500

0

500

~

30e

f--f---

" 100 I--

.~

0
0

t;

:>

300

......

..2:
z

-

a

1-1"-

0

t

,"'

50
30

5
3

10

30

50

100

300

Vco(V), COLLECTOR-BASS VOLTAGE '

lelA), COLLECTOR CURRENT'

SWITCHING TIME

10._~
Vcc-10V~

Ic=10'IB1""-10'IB2

!IIi=
-.t

t
~

!

-.t

j

1s1,

05
03

0,1
005
0.03

f---

O.O~"'0"'01"""":"0,"'00:"3:'-'"""0

.uO~'--,-J-:-3-:-0-:-6:'"""~

"'01'-""0"0"'3':-0":,0'"5

lelA~

c8

COLLECTOR CURRENT

SAMSUNG SEMICONDUCTOR

262

KSK30

SILICON N-CHANNEL JUNCTION FET

LOW NOISE PRE-AMP. USE
r0-92

High Input Impedance: Ig.. =1nA (MAX)

Low Noise: NF=O_5dB (TYP)
High Voltage: V.... =,..50V

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Gate-Drain Voltage
Gate Current
Collector Dissipation
Junction Temperature
Storage Temperature

VgrJs
Ig

Pc
Tj
Tstg

Rating

Unit

-50
10
100
125
-55"-'125

V
mA
mW
·C
·C

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Gate-Drain Breakdown Voltage
Gate Leak Current
Drain Leak Current
Gate-Source Voltage
Forward Transfer Admittance
Input CapaCitance
Feedback Capacitance

BVgrJs
I..,
loss
Vgs(oft)

IV"I

Ciss
Crss

Noise Figure

NF

1. Source 2. Gate 3. Drain

Test .Condltion

Min

Vos=O, Ig= -1 OO~A
V.. =-30V, Vos=O
Vos= 1OV, VGS=O
Vos= 1OV, ID=O. 1~A
Vos~10V, V.. =O, f= 1KHz
Vos=O, Vgs=O, f= 1MHz
Vg~=-10V, Vos=O
f=IMHz
Vos= 1 5V, Vgs=O
Rg=100k!l
f=120Hz

-50

Typ

Max

Unit

8.2

V
nA
mA
V
mS
pF

2.6

pF

-1'
6.5
-5

0.3
-0.4
1.2

0.5

5

dB

IDSS CLASSIFICATioN
Classification

R

O.

loss(mA)

0.30-0.75

0.60-1.40

'Y
1.20-3.00

cIS SAMSUNG SEMICONDUCTOR

G
2.60-6.50

263

•

kSK30'

SILICONN-CHANNEL JUNCTION FET
<

lo-V.s
64

STATIC CHRACTERISTICS
80

1
Vos=10V

56

,/
64

48

I

I-

Z
W

a: 40
a:

z

32

~

/

a:

e

;,i

24
Rs=1kD

16

-V

As-2ko
08

AS-5kO!..
Rs=10kD

-32

-28

r-.I.

~

1/
I

V

j

o

II

/

::>
0

/

1/

1/

~,./

I::> ~.L

--. .

.~

-24

-20

-16

-12

Yg.(V),

GATE~SOURCE

-08

I

VII

..

'wZ

~ 48
::>

o
z

~

e 32

j
16

-

;--

-

,

o 2V_ e-v,,- o 4V
o 6V
o 8V
V"'
gs -

.VgS-

<

..

IV

...j

~ V-

0-

In

V",'=-O

.~ ~

l-

e

a: 16

;a:

~V

0

1i'i
~

Vgs =-10V
VQS--16

08

16

V,,= 12V=
gs--14V

24

/

..

V.~=-O ~V

~

/

Z

a:

v~,:,-oL

32

08

~

=

o

40

-40

V

/

/

/

/

/

L 'L

a:
w 2.4

Vgs--O 2V

/

~...:: 16
08

e

/~

o
z

/

32

/
-32

/ II

/

/

I

/ / III
I
//
I

-16

-24

I

-08

Vgl(V), GATE-SOURCE VOLTAGE

V".(V), DRAIN-SOURCE VOLTAGE

V9s(Off)-lDSS

IVls!-to
6.4

-10

Vos-10V

loss

Vos=1DV

'Vgs-O'
Vgs(off). Vos-l OV

f""1KHz

w

.
0

10=01/-1A

z

l-

I-

..
..
IE
e

48

i-"

a:
w

.
.
.

~~6"'~

In

Z

~,p~~sV

a: 32

l-

e

1

a:
~

0

:i!

~

'o/:V'

$
h~
V
fl ,i

16

.....

~

-02

'(

16

32

48

l,(mA), DRAIN CURRENT

=8

V

lOsS

h

a:

1i'i
S

./k?;r

,/

SAMSUNG SEMICONDUCTOR

64

-01
01

a2

05

1

10

loss(mA). DRAIN CURRENT

264

"

KSK30

SILICON N-CHANNEL JUNCTION FET

IVfsHDSS

NF-f

100

~ 50

.
i
.
Z

I-

'0r-'-rnTm~'-rnTmr-'-rnTm~VM~_-'~5~V~

loss'Vos=10V
Vgs=O
jVfs! Vas 10V
Vgs-O

lo=1mA

'-1KHz

20

i:!

Q

g

1-0

ii:

!!l

61-+++t+tttt--++t-tHffl---t-+tttttlt--H-tttml

~

01

02

05

10

20

50

100
~KHz).

IDS1(mA), DRAIN CURRENT

NF-Io

FREQUENCY

Ciss-Vgs, CraS-VOD

5

Vos=15V
Rg=100KO

2.0

w

~

ii:

15

III
is
z

...::. 1'0

l

05

,\

f-120Hz

04

02r--t-+-~-+-r--t-t--t-i--i

-

0.8

1.2

1 .•

20

0.1 0L---'--_-2':-.......-.J.4:-....L..-_"'::6--'--_:-8-"'-~,0
V,o(VI. OATE-DRAIN VOLTAGE
V,JVI. GATE-80URCE VOLTAGE

lo(mA), DRAIN CURRENT

NF-VDS

NF-Rg
10

\

lo=1mA
Ag ""100KO

Vos""'15V
lo-1mA

1\

:1\ \ ~~~;-+t+tH'H--++t-t+tHl--++t-Ht!l

~~L

~r-

..f

.\

?- ""'' '1

~

o LUJllllILlJltl!!t~~~
100 200500 1k

2k

5k 10k 20k

SDk lOOk 200k500k 1M

Rg(QI, SOURCE RESISTANCE

c8SAMSUNG SEMICONDUcrOR

~~~

L ~~~
12
Vos(V),

16

20

24

28

32

DRAI~OURCE VOLTAGE

265

SILICON N-CHANNEL JUNCTION· FET

POWER DERATING
160
140

z

120

~

100

~..

.

.

~
~

80

~

60

~

40

'"

~
"\

I\.

'\

20

'\
25

50

75

Tc('C~

c8

100

125

150

175

200

CASE TEMPERATURE

SAMSUNG SEMICONDUCTOR

266

KSK65

Si N..CHANNEL JUNCTION 'fET

AF IMPEDANCE CONVERTER
• Built-In Diode Between G and S
• Low NY

TO-928

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Drain-Source Voltage
Gate-Drain Voltage
Drain-source Current
Drain-Gate Current
Gate-Source Current
Power Dissipation
Operate Temperature
Storage Temperature

Symbol
Vo8o
VGoo '
1080
1000
IGSO
Po
TOPR
Tstg

Rating

Unit

12
12
2
2
2
20
-10"'+70
-20"'+80

V
V
mA
mA
mA
mW
·C
·C
1. Source 2. Gate 3. Drain

ELECTRICAL CHARACTERISTICS (Ta
Character·istic

Symbol

=25 °C)

Test Condition

Min

Typ

Max

Unit

0.8

mA

..

Drain Current

loss

Transconductance

gm

Noise Voltage

NV

Voltage Gain

Gv1

Voltage Gain

Gv2

Voltage Gain

GV 3

Vos=4.5V. VGs=O,
Rs=2.2k!l±1%
Vos=4.5V, VGs=O,
Rs=2.2k!l±1%, f=lkHz
Vos=4.5V, Rs=2.2k!l±1%,
CG=10pF, A curve
Vos=4.5V, Rs=2.2k!l±1%,
CG=10pF, EG=100mV,
f=70Hz
Vos=12V, Rs=2.2k!l±1%,
CG=10pF, EG=100mV,
f=70Hz
Vos=lV. Rs=2.2k!l1%,
CG=10pF, EG=100mV,
f=70Hz

0.04
300

500

liS

4

IIV

-10

dB

-9.5

dB

-11

dB

loss·Gv CLASSIFICATION
Classification
loss (mA)
Gv1 (dB)
Gv2 (dB)
1::.1 Gv1-Gv2I(dB)
1::.1 Gv1-Gv3I(dB)

c8

P

Q

0.04-0.2
>-13
>-12
<3
<3

0.15-0.8
>-12
>-11
<3

SAMSUNG SEMICONDUCTOR

•

-

287

Si N·CHANNEL JUNcrION~ET

KSK65
I".VDS

,

I".VGS

800

0

vosL46J

T.I.2J.C

L

Ta =25°C

•

800

".

~

)~ ..... 1--

/'

200

I-

.....

Vas=O

vl""lo

1-- ....

--

I-

,

VG~=loL

I..........

2

#O~

Vos--O 5V
Vos- 06V

Vas=-O 7V

10

12

14

0
-10

16

-0.

gm~D

Vos=4.SV

..

=lkHz

D.
;

08

:!

0.7

J. . . ...........

11
, 0

~

=wc.1
~

T

w

I .

~ 0.5

~ D.'

o. 3
o. 2

I

I

fl
I

03

04 05 0.6 0.7
DRAIN CURRENT

O.S

09

10

loImA~

i
'oss;o 3mlf

4

II

03

o
-10

~

f-'"'

11
II

lloss-'l,mA

f

,
0.2

b---: ~

08

02

1

0.1

02

~J~

j::

·111

08

I

t1:~

-0 ,

Vos-45V
f ""1kHz
Til =25°C

09

~J7

I r-;!

""'"

06

lL

Vos(V), GATE-SOURCE VOLTAGE

VOS

<.>

z

C

L /~

II:

0

;t

e

.f--.

!~

h h VI

o
-1.6

-1.2

If

,6 ~ ~ r0

- 08

hp

i'A.

f-lf

VL IJL

li

'oS~~

.
Q

z0

06

In

:ii

05

J

Ii O'

'/

I

E

!

'/

03
02

1
03

04

05

06

07

08

09

o

10

-10

lo(mA). ORAIN CURRENT

lL
I'j- I,mA

/

01
02

/

loss=o3mY

u

I!'

01

~l -

\~

Z

05

FE a

!

;J~

Vos-45V
f =1kHz

09

06

I!'

-02

gm-Vas

.,k....I--+-

I
ti'
Ibl ,tlf
:ii
O.

-0 •

Vas(V), GATE-SOURCE VOLTAGE

g",.ID

09

lL

¥

~~

-06

-08

V.,.(v). DRAlf'<.SOURCE VOLTAGE

Vos=45V
f ""1kHz

V

o·

6

1;'1'1'
1V
~
V 1'1'1'1"'"
d,=tL
1'1"'"
1'1'
vLtL
!--'~
v~-!.olv
I'f-"
I-~
V'~

400

",V

VGS""O

V

09

-

II-

-

O

-

II

08 07 06 05 04 03 02
VQs(V), GATE-SOURCE VOLTAGE

01

NF-I
0

2

Vos=45V
10 =3OO.llA

8

T. =25°C

28

6

•
I'

8

~JII

6

."2

F\:i=1000

Il'h!

I

R~Jbo.

0
0010.020050.102

is

20

1"\

I"

2

'

~

051

I"

8

...

4
5 10

20

~kHzl. FREQUENCY

." SAMSUNG SEMICONDUCToR
ex
".

2'

~

2"0

z

50 100
25

,50

75

"

100

~

125

150

T4"CI. AMBIENT TEMPERATURE

175

200

I

"kSK123 "

SIN·CHANNEL JUNCTION 'FEY
NF·RG '

NF~D

24
20

Voo=4.SV
10 -300,.A
'Tft =25°C

I

Vos=r.45V

"" =100011T~ =2SoC
16

16

\
14

j""1DOHz

f=100HJ/

1=1

-

''\

''''lkjZ''\

I

o

01 02

051

2

/

1\
5

."

10

1\

20

~

~-"""
50 100 200 5oa1000

RatOO)

c8

SAMSUNG SEMICONDUCTOR

02

V

V
/

/tllkHz V ./
, / K. :0-",

V ./ /"
V k:: ',/
~

04

06

06

IDtmA), DRAIN C\mRENT

276,

KSK161

SILICON N·CHANNEL JUNCTION FEr

FM TUNER
VHF AMPLIFIER

T0-928

- NF = 2.5 dB (TYP)
-IYFSI
9.0 mS (TYP)

=

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic

Symbol

Gate·Drain Voltage
Gate Current
Power Dissipation
Junction Temperature
Storage Temperature

VGOO
IG
Po
T,
Tstg

Rating

Unit

-18
10
200
150
-55""150

V
mA
mW
·C

·C

1. Drain 2. SoII'ce 3. Gale

ELECTRICAL CHARACTERISTICS (Ta= 25 °C)

.

,

Chara,cteristlc

Symbol

Gate Cut·off Current
Gate·prain Breakdown Voltage
Drain Current
Gate·Source Cuf·off Voltage
Forward Transfer Admittance

IGSS
V(BR)GOO
loss
VGS(off)
IV,sl

Reverse Transfer Capacitance
Power Gain
Noise Figuer

Cras
Cps

NF

Test Condition
VGS= -0.5V. Vos=O
IG -1 OO"A, Drain
Vos=10V, VGs=O
Vos=10V,lo=1"A
Vos~ 1OV, VGS=O,
f=1kHz
VGo=10V: f=1MHz
Voo=10V, f=100MHz
Voo=10V, f=100MHz

=

Min

Typ

-18
1.0
0.4

Max

Unit

-10

nA
V
mA
V
mS

10
4.0

9
0.15
18
·2.5

3.5

pF
dB
dB

IDSS CLASSIFICATION
Classification

0

Y

G

loss

1.0-3.0

2.5-6.0

5.0-10

=8

SAMSUNG SEMtCONDUCTOR

277

~SK1.',

/SILIC(). N.,'N·OHANNEL JUNCTION:FET
. .

,

I.,.VDS

STATIC CHARACTERISTIC

v!~=o

......
...z

/

OJ

rr:

vgS-a

,,.

.......,.
-1.2

c-

0:
0

~

02V' -

.. ~d sJ-c-

I

-08 -04

a

5

V.~VI. GATE-SOURCE
VOLTAGE

10

'/

:;;

15

20

...... 1--""'.

/.1/
JIJ
,u,

Vg.=-Q 4V

Vgs=-a BV
Vf}S=-1.6V
Vgs=-1 2V

25

v~,~-Lv

V

/

.2

E

I I

1

Vgs=-O.2V

~

-J,.L

V

(J

I I

,.&/

v"iTi

II:
::>

t--

Vgs=
5--

1

V..(VI. DRAIN-SOURCE
VOLTAGE

0 BV

.-

Vgs
1

2

-0 BV
1m

3

V,S(VI. DRAIN-SOURCE VOLTAGE

Crss-VOD

Yls-VDS

100

5D

?

f=100M!"I!.=
T'125'~_

f=1MHz=

Ta =25"C20

OJ

(J

Z

10

"~
~

(J

"
"

,
0

OJ

~

1

(I,s:1
los 2m
los a SmA

-bfs

Ics""5mA(loss)

'\

(J

III

l:s=5~A

Dfs

Ics=2m

05

'lo..

0.2

........

01

1

-

0.05

5

002

002

00 1

00 1

o

-2

-;4

10

6

-6 -8 -10 -12 -14 -16 -16 -20
Vao(V). GATE~DRAIN VOLTAGE

12

14

Vos(V), DARIN-SOURCE VOLTAGE

POWER DERATING

la-Vgs

250

10

V~=lO~

-Ts -2S"C
200
Z

~

"Ili
III

\

150

0:

OJ

0

IL

/

\

1/

50

J

\
25

50

I

/

I/Q:l

i\
\

%

IL

/

~
. / " Y ).

\

100

i

ciS

AS=100~

\

is

•

I

\

75 100 125 150 175 200
,Tc(OC), CASE TEMPERATURE

SAMSUNG SEMICONDUCTOR

o
225 250

-2,0

-

/

V

/

/. v./

~ V ........: ~ :::;...

-16

-12

-08

\/

1/ L
...,
~

-04

vlI.(V), GATE·SOURCE VOLTAGE

278

SILICON N·CHANNEL JUNCTION' FEY .

KSK161
IVlsHo
20

VI ..Vos
100

Il

50

_Vos=10V
f=1KHz

w
u

.......
.
.I!'
.
z

16

w

i

'10

U

a
rr:

Z

w

."'~ ~I.:--

12

Il;
z

./.

a
rr:

-

-

;r

rr:

...
0

W

l'~Y

1::===~P;;s~'O""-

P"

~

!

~

f==bls= f== F1os=5mA(loss)

;!

los""2mA

ia
...
:>

los a SmA.

..
!

.

05 FQls=

Ii
e

02

...:;:

,J

Ii

~:1~~~~~

20

_ T a =2SoC

=

FI, "SmA toss

0.1

002
001

•

4

10

10

12

eisa-Vgs

w
u
Z

g

200

w

:I

a
rr:. 20

50

i.

20

...rr:

10

:>

50

..

100

u

.

I

loss : Vos-l0V
Vgs-O
Vf. : Vos=10VVgs=O

f'""lKHz
Ta-25°C

. ...
~

rr:

...0

Ii

i

~

1
04 0.6

:'"_:-,"':.::-72 .0

2
5
1,..(mA), DRAIN CURRENT

'"

Y.~V), GATE-SOURCE VOLTAGE

VIs, V, ..I

os=~;p

VIl8 ""O

T."",25°C

20
10

I-- .

.fs

WW
......
zz
c ..
rr:rr:
......
OW

5

~
~

Vg&{off): Voss-l0V
lo-1jJA
loss : Vos-l0V
V'" 0

!

-2

~

~

~

rr:"

~

~

20

40

KI

" -0 5

~

1

......

-

1

,.

~

T,=25°C

W

;15
o it;

40

-1 0

50

e

20

V• .(off)-Ioss

100

....

24

'0

0.1 0':-:0:':2:-_:"0.":4-:0"':6:'"_:-0:'-.:--:,':.0--'i"':.2:'"--1="4-:-"-",:,":
.•

rr:rr:

22

;r

02~-+--1---t--+--4---t--+--4---t-~

~

20

rr:

~
-:
u

ii
aD
CC c

.

,

0

!

ww
UU
ZZ

16

IVIsHoss
'00

500

Z

14

Y,slY), DRAIN-SOURCE YOLTAGE

tODO

U

2mA

005

4
1,(mA), DRAIN CURRENT

.
5..
.
...
.

los

los""D.5mA

... rr:

n° ,
5

> -0. 2
~.

0.2

I!!

..... ~

.0

10

.

20

50

100

200

-0. 1
500 1000 2000

5000 10000

~MHz), FIIEQUENCY

ciS SAMSUNG SEMICONDUCTOR

0.4 0.6

'2

5

10

loss(mA~ DRAIN CURRENT

279

'SILICON'N-CHANNEL JUNCTION FET

KSK161

VO"VDS

VI., VO..'·

100

100

50

f=100MHz

T.=25°C-

VOS=~H
VgS-O

50

20
W

...!1

T. 26 G C

10

i...

!!115 I;::--bos- rIDS

I- -

5mA(loss)

I,. 2mA

los-a.5mA

....

-if.

~"

05

Iii

0.2

~

0

,..t

0.1
005

~

~

1

!os=5mA{loss)

i

los=2tnA
los-C.5mA

O. 2

0.02
001
10

&/

12

14

16

18

20

VOl/V), DRAIN-50URCE VOLTAGE

ciS SAMSUNG SEMICOND~CTOR

22

24

1
10

V
'20

50

100 200
500 10002000 5000 10000
qMHz), FREQUENCY.

280

KSK211

SILICON N-CHANNEL JUNCTION .FET

FM TUNER
VHF AMPLIFIER

80T-23

- NF = 2.5 dB (TVP)
-IV..,
9.0 mS (TVP)

=

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Gate-Drain Voltage
Gate Current
Power Dissipation
Junction Temperature
Storage Temperature

VGOO
IG
Po
T,
Tstg

Rating

Unit

-18
10
200
150
-55",150

V
mA
mW
°C
°C

1. Drain 2. Gale

I

3. Source

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Test Condition

Symbol

Gate Cut-off Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cuf-off Voltage
Forward Transfer Admittance

IGSS
V(BR)GOO
loss
VGS(off)
IYFsl

Reverse Transfer Capacitance
Power Gain
Noise Figuer

Crss
Cps

i

NF

VGS= -0.5V. Vos=O
IG= -1 OOjAA. Drain
Vos= 1 OV. VGs=O
Vos=10V.lo=ljAA
Vos= 1 OV. VGS=O.
f=l kHz
VGo= 1 OV. f= 1 MHz
Voo=10V. f=100MHz
Voo=10V. f=100MHz

Min

Typ

-18
1.0
0.4

Max

Unit

-10

nA
V
mA
V
mS

10
4.0

9
0.15
18
2.5

3.5

pF
dB
dB

loss CLASSIFICATION
Classification

0

y

G

loss

1.0-3.0

2.5-6.0

5.0-10

cR
••

SAMSUNG SEMICONDUCTOR

281

'SILICON N~HANNEL JUNCTIONFET

KSK211

I.-VDS

STATIC CHARACTERISTIC

......

1/
Vgs=O

"
~I
,,3/
II

-12

VgS""-O 2V

/

VIlS=-O 4V

-0.8 -0.4

0

5
10
15
20
VoslV), DRAIN-SOURCE
VOLTAGE

VOLTAGE

Vga=-O.8V
Vgs--10V
Vgs .,,-1.2V
25

III

.-1

2

3

4

VIs -VDS

i=

50

f='MHZ=
Ta=25°C-

II

20

'0

'\

f.100MH

T'i· 5•C20

1~-5rriA lIeJ)

0''

10

los· rnA
108=0 SmA

los=5mA(los~)-

-bfs

~

~. 0.2

,

I'-....
J

0.05

1"-\

108- rnA

i 0.

05

0.

a.BV

=.-

100

50

U

Vgs'"

VoslV), DRAIN-SOURCE JlOLTAGE

Crss-VOD

E

,.

Vga=. 06V

Ik::

'100

Ii

VQs =-D.4V

/V/

1

-~"Ld.6J-r-

V,~V), GATE-SOURCE

II

/'

V/ ..,"-

I

IX
J..1'

-

I--

/

r-c--+-r

·J.,L.v-f--

II

r-- V"rTi

I

Vq~-O

CI

05

ri'

O. 1

--

~ 0.05

;:
0.02

0'.0

0.02

,

o

0.0 I
-2

-4

-6

-8

8
10
12
V..(V), DARIN-SOURCE VOLTAGE

-10 -12 -14 -16 -18 -20

V.o(V), GATE-DRAIN· VOLTAGE

POWER DERATING

14

I.-V ••

250

10

V~-'o~

I

r--T,-25'C

200
Z

.~

\

iii '50

~

.
i

l'

\

/

i\

II:
W

~

=

\

'00

\

/

1\
25

50

I

V /

V, /~

1/ / '9

\

50

/

Rs 1OO

1/ . /

\

c8

V

75 100 125 150 175 200
Tc(OC), CASE TEMPERATURE

225 250

SAMSUNG SEMICONDUCTOR

°°

-2

Ii

V/ 'V
V...... J7 17

r..,..... ~ V ~ ~ ~ V

-1 6
-1 2·
-0 a
-0.4
V..(V), GATE-SOURCE VOLTAGE

&

1/1

282

KSK211

SILICON N-CHANNEL JUNCTION FET
Yls ·ID

20

I .~

t--Vos==10V

W

.

"
i0

f=1KHz

Z

l-

20~-+--1---~-+--1---r--+--1---~-1

r-- Ta "'25 c C

16

~

.

Z

a:

...

W
III

..
...

Yis-Vos

12

Z

......::

a:

""'~ ~-::-.....:::~7:
~10"'~~
\05 5

Z
i~_

.-Y P""
(/

.
0

a:

/'

~

a:

fl

of

~

II

~

~~

gls~~r-IDS=5mA(loss

ID8""2mA
05Rlif
tm

02

los-O SmA

>=01~~!m

W

005~

002~-+--+---~-+--+---r--+--+---r--1

If

0014L--7--~~'~0~'~2--~'4~~'~.~'~8~~20~~2~2~2'

10

6

Vos(Y), DRAIN-$OURCE VOLT AGE

'ID(mAY, DRAIN CURRENT

100

500
W

0
Z

200
~.

....
....
Z

.
.
I
I-

::>

lE

50

l!

i

.

100

a:

20

..
..

10

...

~-10V_
Vgs 0
yts . Vos-10V
Vgs=D
f=1KHz

r-"I

Ta=21?°C

0

50

i3

"

I

IYlsl-los.

Ciss-Vgs
1000

III

W

20

III

Z

10

~
0
a:

5F=

it

I-'

.!

~..- .......

~

a:

fl

"

of

~
J!!

02~-t--+--+--+-~---r--~-t--+--+

~

0'0L-_-0~2--_0~4-_-0~6-_-0~8--_~'-0-_-'~2-_-'~4--_~'-6-_-'~8--~20

04 06

2

V,.(V), GATE·SOURCE VOLTAGE

YI., Y,.·1

,,0w

50

~ ~

20

0( 0(

10

....

os~~~
Vgs=D
Ta -25°C

a: a:

-5

40

r-

g

gfs

20

40

Vgs(off) Voss-l0V
lo-1J.1A
. Vos=10V

los,

W

"~

Vgs=O

T.'"'25°C

-2

W·

~~
ZZ

0
a:
::>

....

0

:z

0"

~~

-1

V

~

.....r
,

I

~

OW

a:

20

-10

ZZ

iiii
00

10

V• .(offHoss

100
oW

5

1""s(mA), DRAIN CURRENT

III

;ffi

~ -05

:>

O~

....~

... a:

H

05

'll

02

0

~

1

10

20

50

1 00

/~
200

~MHz),

-02

~

pOD 1 000 2000

5000 1000a

FREQUENCY

-01
O. 0 .•

10
lon(mA), DRAIN CURRENT

.

c8

SAMSUNG SEMICONDUCTOR

.283

SILICON· N~HANNEL JUNCTION FET

KSK211
VOS-VDS

Vis, Vos-'

100

100

60

f-1QOMHz

T. 25'0-

V08=10V

~o

I

10

~ ;::-bos- -'os""5mA(loss)

·c

I
~

!

v,,~!±

-

20

_

..

Ta -25,oC

..

los=2mA

los-a.SmA

~

1

~~/

0.5
02

O. 1

R;: f::::E:-

1

108- 6mA{loss)

'I

los-2mA

0.05

/

los==D.5rt\A

0.2

0.02

o. 1

0.0 1
4.

10

12

14

16

18

20

VDa(V), DRAIN-SOURCE VOLTAGE

c8

V

SAMSUNG SEMICONDUCTOR

22

24

10

20

50

100 200
500 1000 2000 5000 10000
{(MHz), FREQUENCY

;:!84

KSR1001

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias 'Resistor (R,=4.7KI2, R,=4.7K(2)
• Complemli!nt to KSR2001

~BSOLUTE

MAXIMUM RATINGS (Ta =2S0C)

Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base· Voltage
Collector Current
Collector Dissipation
Junction Tem'perature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
·C
·C
1. Emillet' 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Characteristic

Symbol

Test Condition

Collector-Base Breakdown Voltage
Collector· Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance

BVCBO
BVceo
ICBO
hFe
Vce(sat)

Ic= 1O /JA le=O
Ic=100/JA,IB=0
VCB=40V, le=O
Vce=5V,lc=10mA
Ic=10mA,IB=0.5mA
Vce=5mA,lc=10V
VcB=10V,le=0
f=1.0MHz
Vce=5V,lc= 1OO/JA
Vce=0.3V, Ic=20mA

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

fr
Cob
Viloff)
Vi(on)
Rl
Rl/R2

Min·

Typ

Max

50
50

Unit
V
V

0.1

IJA

0.3

V
MHz
pF

20
250
3.7
0.5
3.2
0.9

4.7
1

3
6.2
1.1

V
V
KI2

Equivalent Circuit
Collector (Output)

R,
Base (Input) ----"""""v---.-~

R,

Emitter (Gnd)

' . SAMSUNG SEMICONDUCTOR

285

NPNIEPITAXIAL. SILICON TRANSISTOR
'3' .

DC CURRENT GAIN

INPUT ON VOLTAGE
·1000

100

: VCE -5)7"

- R.- 4.7K
4.7K

VC'C O.3V

. RI -

50

500

30
300

IV

a
i

1O~.

·z

-

~

>.

~

i1-

100

g

50

1

30

v ..
-

~

I

~

05

/

0.3

0.1

3

03 0.5
IdmA~

5

10

30 50

10

100

-

/

3

1

COLLECTOR CURRENT

S

30 50

10

100

300 SOO 1000

lalmA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
1000

400

VCE-5V
R,=-4.7K

R.-4.7K

!iii

I

3s0

.~
~

500
300

..

I

I

I

~0

..

f~

aoc
2s0

1\\

200

i\.

\

150

I"

100
50

10
(

0.4

0.8
V~OFF)

cIJ

1.2

. 1.8

2.0

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

~

i'
25

50.

75

100

\

125

150

176

200

T,(°C), AMBIENT .TEMPERATURE

286

KSR1002

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built I,n)
TO-92

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R,=10KO, R,=10KO)
• Complement to KSR2002

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VeBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emiller 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta

=25 Oe)

Symbol

Test Condition

Min

BVCBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVceo
Collector Cutoff Current
ICBO
Current Gain
hFe
Collector-Emitter Saturation Voltage
VCE(sat)
Current Gain-Bandwidth Product
fr
Output Capacitance
. Cob

Ic= 1O,..A. IE=O
Ic=100,..A.la=0
Vca=40V. lemO
Vce=SV. Ie-SmA
Ic= 1OmA. la-0.5mA
Vce=SmA.lc=10V
Vca=10V.le=0
f .... 1.0MHz
Vce=SV. Ic=100,..A
VCE=0.3V.lc=10mA

50
50

Characteristic

oe

Input Off Voltage
Input On Voltage
Input ·Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R2

Jyp

Max

Unit

0.1

V
V
,..A

30
0.3
2S0
3.7
O.S
7
0.9

10
1

3
13
1.1

V
MHz
pF
V
V
KO

Equivalent Circuit
Collector (Output)

A.
Base (Input)--.......~.r--.----1

A,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUcroR

.287

NPN 'EPITAXIAL· SILICON TRANSISTO~

KSR1002·

DC CURRENT GAIN

INPUT ON VOLT4'GE
1000

~~~~~

50

VCE-SV
R.=10K
'. Ra-10K

500

~

.u

300

...
...a:

C!I
Z

-

/;'

a:
:> 100

U

g
~

50

.c:

/

30

/

n,

0.1

0.: 0.5

1

3

10

5

30 50

100

10

,

3

5

30 50

10

100

300 '500 1000

Ic(mAl, COUECTOR CURRENT

lc(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
400

Vce-SV

R.·10K
AI -10K

I

1000

350

z

30C

0

iI

I

,

I

..
t......

250

\y
\.

200

\

0

150
100

I\,
i\.

50
10

o

0.4

0.8

1.2

1.8

2.0

VdOFF) (VI INPUT OFF VOLTAGE

.c8SAMSUNG SEMICONDUCTOR

25

50
T,(OC),

75

100

\

125

150

175

200

AMBIENT TEMPERATURE

288

KSR1003

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
TQ-92

• Switching circuit, Inverter, Interface. circuit Driver circuit
• Built in bias Resistor(R.=22KO, R,=22KO)
• Complement to KSR2003

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol

Char!lcteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature·
Storage. Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
°C
°C

•

1. Emiller 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25° C)

Charact".lstlc

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVcBO
BVeeo
leBO
hFe
Vce(sat)

50
50

Cob

Input Off Voltage
Input On Voltage
Input ReSistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R2

le=10jiA,le=0
le= 1OOjiA, 18=0
Vi;a=40V, le=O
Vee=5V, Ic=5mA
Ic= 1OmA, 18=0.5mA
Vce=5mA,le=10V
VC8=10V,le=0
f=1.0MHz
Vce=5V,le=100jiA
Vce=0.2V, Ic=5mA

Typ

Max

Unit

,

fr

V
V
0.1

jiA

0.3

V
MHz
pF

56
2.50
3.7
0.5
15
0.9

22
1

3.0
29
1.1

V
V

KO

Equivalent Circuit
Collector (Output)

R,
Base (Input)

---""",/---,---i
R,
~---f Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

289

KSR1003

NPN; EPITAXIAL SILICON TRANSISTOR

:."

INPUT ON VOLTAGE

. DC CURRENT GAIN

100

Vee-0.2V
R.-22K

Ra-22K

50

...

1000

30

600
Z

c:I

Vce-5V
9.1 -221<
R,-22K

300

~

~

...

"- .10

...
z
I:::>

!;:

8
1

~

~

U

~

6

./

r--- -

~'
100

50

f

30

Vi-'"
1
0.1

0.30.6

1

3

6

10

10

30

I
1

3

5

\c(mA) COLLECTOR CURRENT

10

!i

500

I

300

B

~

.g

100

.U

50

}

30

POWER DERATING

350

~...

I

I

I..

30C

250

1\\

200

~

\

150

ill

E
100

i\
~

5Q

.\

i
o

0....

0.8

1.2

1.6

300 500 1000

400

VCE-5V
R.-22K
R, -22K

l

10

100

lc(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE.

1000

30 50

2.0

V~OFF) IV) INPUT OFF VOLTAGE

c8 SAM~UNG SEMI~ONDUcroR

25

50

75

100

125

150

175

200

T,(°C), AMBIENT TEMPERAniRE

290

KSR1004 -

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)

T0-92

• Switching circuit, Inverter. Interface circuit Driver circuit
• Built in bias Resistor(R, =47KfI, R,=47KfI)
• Complement to KSR2004

ABSOLUTE MAXIMUM-RATINGS (Ta =2S0C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emiller Voltage
Emiller-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcao
Vceo
Veao
Ic
Pc
Tj

-Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
°C
°C

I

1 _ Emitter 2. Collector 3_ Base

ELECTRICAL CHARACTERISTICS (Ta

=25

0

C)

Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emiller Breakdown Voltage
Collector Cutoff Current _
DC Current Gain
Collector-Emitter Saturation V6itage
Current Gain-Bandwidth Product
Output Capacitance

BVcao
BVceo
ICBO
hFE
Vcdsat)

le= 1 OIolA, IE=O
Ic=100jlA,la=0
Vca=40V, le=O
Vce=5V, Ic=5mA
Ic=10mA,la=0.5mA
Vce=5mA,lc=10V
Vca= 1OV, IE=O
f=1.0MHz
VcE=5V, Ic= 1 OOjlA
Vce=0.3V, Ic=5mA

50
50

fr
Cob
Vi(off)
Vi(on)
R,

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

R,/R 2

Typ

Max

Unit

0.1

V
jlA

V

68
0.3
250
3.70.5
32
0.9

47
1

3
62

V
MHz
pF
V
V

Kfl

1.1

Equivalent Circuit.

R.

Base (Inputt

--""-""""V---,-,
R,

' - - - - - I Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

291

KSR100'4

NPNEPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN
INPUT ON VOLTAGE
1000

100

-Vet -5V
R,- 47K
47K

Vce-O. 3V

R.-

R,=47K

50

R2=47K

500

30
300

~~

,

Z

C

10-"

~

ell

~

W

II:
II: 100
U
U
CI
50

I·

/:

'"

~.

I:>

1
0.5

r--- -

--

30

0.3

0.1

3

0.3 06
lc(mA~

5

30 50

10

10

100

3

COLLECTOR CURRENT

5

10

3050

100

300 500 1000

lc(mA,. COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
400

Vce- 5V
R.-47K

..
Z
II:

I

Rz-47K

1000
500
300

30C

~

"-

250

..

200

i
"

II:

e

II:

1\\

2

0

il

50
30

\

150
100
50

10

a

0.4

0.8

V~OFF) (VI

c8

~

lJ

100
M
...

J

z

0

'U

U

350

1.2

1.8

2.0

INP.UT OFF VOLTAGE

SAMSUNG SEMICONDUCJOR

o

1\

,

j

i
25

50

75

100

\

125

150

175

200'

T,(·.~ AMBIENT TEMPERATURE

292

KSR1005

NPN EPITAXIAL SILICON TRANSlsroR

, SWITCHING APPLICATION

(Bias Resistor Builtin)

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,,,,4.7KO, R,=10KO)
• Complement to KSR2005

• TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector· Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol
VCBO
Vceo
VeBO

Ie
Pc
Tj
Tstg

I

~atlng

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
·C
·C
1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance

BVcBo
BVceo
ICBO
hFe
Vce(sat)
Cob

50
50

Current Gain·Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

h

Ic=10I'A,le=0
Ic=100I'A,le=0
Vce =40V, le=O
Vce=5V, Ic=5mA
Ic=10mA,le=0.5mA
Vce=10V, le=O
f=lMHz
Vce=10V,lc=5mA
Vce=5V,lc=100I'A
Vce=0.3V, Ic=20mA

Vi(off)
Vi(on)
R,
R,/R2

Typ

Max

Unit

0.1

V
V
,.A

30
0.3
3.7
250
0.3
32
0.42

4.7
0.47

2.5
6.2
0.52

V
pF
MHz
V
V
. KO

Equivalent Circuit
Collector (Output)

R,
Base (lnputlO---~"""'-r---I
R,

Emitter (Gnd)

..

eSC SAMSUNG SEMICONDUCTOR

293

'NPH t£PITAxIAL· SILICON TRANSISTOR

INPUT ON VOLTAGE

DC.CURIIENT GAIN'

100

1000

VCE""5~~

Vce"'O 3V
Rl -47K
R2- 1OK

50
30

~

.~

10

g

'R 1 "'"47K

500

R2=1OK

300

-

.."~

--

100

Z

"'a:a:

i

B
g

;E

......

~

'C'
J?
:>

~

~-

50

30

V

i

10

05
.03

01

37

03 05

3

5

10

30 50

1
01

100

0305

3

1c(mA), COLLECTOR CURRENT

10

30 50

100

175

200

I

INPUT OFF VOLTAGE

POWER DERATING
400

10000
VCE-5~,;=
Al 4.7K_
Rz ""'10K_

5000
3000

1000

I

350

~

30

:c

250

I

0

1\\
\.

1

\

200

~

i'
..
0

5
3

150

100

1\
1\

0

1
0.10.30.5070.91.113151.71.921
V~OFF)(V),' INPUT OFF VOLTAGE

c8

5

lc(mA), COLLECTOR CURRENT

SAMSUNG SEMICONDUCTOR

25

50

75

100

\

125

150

T~·C~ AMBIENT TEMPERATURE

294

KSR1006

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bills Resistor (R,=10KIJ, R,=47KIJ)
• Complement to KSR2006

T0-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Col/ector DiSsipation
Junction Temperature
Storage Temperature

Rating
50
50
10
100
300
150
-55-150

Vcso
VCEO
VESO
Ic,
Pc
Tj
Tstg

Unit
V
V
V
mA
mW
·C
·C·

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
CollectOr Cutoff Current
DC Current Gain
Collector-Emitter Saturatioo Voltage
Output Capacitance

BVcao
BVcEo
Icso
hFE
VcElsat)
Cob.

Ic=10jAA.IE=0
Ic=1001olA. la=O
Vca=40V. IE=O
VCE=5V. Ic=5mA
Ic=10mA.la=0.5mA
Vca=10V. IE=O
f=1MHz
VCE=10V. Ic=5mA
VCE=5V. Ic= 10010lA
VCE=0.3V.lc=1mA

50
50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
, Resistor Ratio

h
Viloff)
Vilon)
Rt
Rt /R 2

Typ

Max

Unit
V
V

0.1

lolA

68
0.3

pF

250

MHz
V
V

0.3
7
0.19

V

3.7

10
0.21

1.4
13
0.24

KO

Equivalent Circuit
. Collector (Output!

R,
Base (Input)G---4It/'f;"t--.,--I

R.

Emitter (Gnd)

c8

SAMSUNG, SEMICONDUCTOR

295

J($R1006,

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

INPUT ON VOLTAGE
1000

100

VCE=5V

Vee-Q 3V
R,-10K
R2-47K

0

500

r-

"
~

0

.
i!:

3

C

11: 100 t=

~

....::>

...

!

i

./

~
,;

--

300

0

w

50
30

g

1

A,"" 1OK
A2=47K

/

i

5

01

r-

1-

O~ 3-~

0305

3

5

10

30 50

1
01

100

03 05

3

INPUT OFF VOLTAGE

1000

V.cE 5V
R,=10K
R2- 47K

350

i
Z

Ill:

I
..",f

30c
0
25

1\'\

200

\

150

100

i\'\
i\.

50
1

0103050709111.31.51.7192.1

c8 SAM~UNG

1,00

400

r=

II

V~OI'f)(V),

30 50

10

POWER DERATING

10000

5000
3000

5

l.,(mA), COLLECTOR CURRENT

Ic(mA), COLLECTOR CURRENT

INPUT OFF VOLTAGE

SEMICONDUCTOR

25

50

75

100

\

125

150

175

200

T,{OC), AMBIENT TEMPERATURE

296

NPN EPITAXIAL SILICON TRANSISTOR

KSR1007

SWITCHING APPLICATION (Bias

ResisW Built Ill)
TQ-92

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,=22KO, Rl=47KO)
• Complement to KSR2007

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic .
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symb$JI

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

50
50
10
100
300
150
-55-150

V
V
V
mA
mW

°C
°C

1. Emitter 2. Collect", 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
. DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance

BVcBO
BVcEo
Icso
hFE
VCE(sat)
Cob

50
50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input ReSistor
ReSistor Ratio

fr

Ic=lOIlA, IE=O
Ic=100IolA,ls=0
Vcs=40V, IE=O
VCE=5V, 'lc=5mA
Ic=10mA,ls=0.5mA
Vcs =10V,IE=0
f=lMHz
VCE=5mA.lc=10V
VCE=5V. Ic=1001lA
VCE=0.3V. Ic=2mA

Vi(off)
Vi(on)
R,
R,/R2

Typ

Max

Unit
V
V

0.1

lolA

0.3

V
pF

68
3.7
250
0.4
15
0.42

22
0.47

2.5
29
0.52

MHz
V
V
KO

Equivalent Circuit
Collector (Output)

R,
Base (InputlO---~~----Y---l

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

297

,.KSRi007

NPN EPITAXIAL SILICON TRANSISTOR

INPUT ON VOLTAGE

DC CURRENT GAIN
1000

VOE"'6t~

l3'

R,.=:2!i!i:<
-47K

500

300

I

10 t:-:::-.

~100 ~.

I8

5

~~

1

50
30

,/1/

g

i

10

0

1

0.1

30 50

·0

0

100

0.1

3

0.3 0.5

1oCmAl. COUECTOR CURRENT

INPUT OFF VOLTAGE

30 50

10

100

POWER DERATING

10000

400

Vc,-5~,:::::

5000
3000

=::!~~=

/

350

~

30

..

250

I

I

I

~.
. 3
1
0.1

5

Ic(mA). COUECTOR CURRENT

0

\\

0

r\.

\

20
150
10b

\
\.

0

I
0.3

0.5

i
0.7

0.9

V~OFf)(V),

1.1

1.3

1.5

1.7

1.9

INPUT OFF VOLTAGE

2.1

25

50

75

100

\

125

150

175

200

T,("CI. AMBIENT TEMPERATURE'

!

c8

SAMSUNG

SEMI~ONDUCTOR

298

KSR1008

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92

• Swl.tching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor (R.=47KIl, R,=22KIl)
• Complement to KSR2008

ABSOLUTE MAXIMUM RATINGS (Ta =25°C) ,
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcoo
VCEO
VEOO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
·C
·C
1. Emitter 2, Collector 3, Base

ELECTRICAL CHARACTERISTICS (Ta
Characteristic

Symbol

Collector-Base Bteakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Galn
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R2

BVcBo
BVcEo
lcao

hFE
VCE(sat)
fy

=25°C)

Test Condition

Min

Ic=10jlA,IE=0
Ic=100jlA,ls=0
Vcs=40V, IE=O
VcE=5V, Ic=5mA
Ic=10mA,ls=0.5mA
VCE=5mA, 1c=1'OV
Vcs=10V,IE=0
t=1.0MHz
Vce=5V, 1c=10011A
Vce-0.3V, Ic=2mA

50
50

Typ

Max

Unit

'0.1

V
V
jlA

56
0.3
250
3.7
0.8
32
1.9

47
2.1

4
62
2.4

V
MHz
pF
V
V

KD

Equivalent Circuit
Collector (Output)

A,
Base (Input) - - - " " " " , _.........--1

A,

' - - - - - I Emitter (Gnd)

c8

SAMSUNG SEMICONDueroR

299

KSR1008

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

INPUT ON VOLTAGE
1000

100

VeE -5V
R.= 47K
R.- 22K

v.,.=O.3V

R,a47K
R2 -22K

50

500

0

is

~.
~-

I

-

g

1

1

300

I

"

100
50

,

30

0.5

.

0.3

0.1

3

0.305

5

IclmA~.COUECTOR
~\

30 50

10

i

10

100

1

3

5

10

30 50

100

CURRENT

.

lc(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
400

VCE-5V
R."47K

1000

.11'

!i

500

~

300

()

-- RJ -22K

350

z

...~

I

a:

e

jj

30C
250

is

iii

()

~
0

100

J

50

~

()

10

I

I

30

I
o

\.\

200

~

\

150
100

I~

50

,
\

I
0.4

0.8

1.2

1.6

2.0

VdOFF) (V) INPUT OFF VOLTAGE

c8 SAMSUNGSEMICONDUcro~

o

25

50

75

100

125, 150

T.(·~

_ENT TEMPERATURE .

175, 200

300

KSR1009

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built

In) •
TO-92

• Switching Circuit, Inverter·, Interface circuit
Driver circuit
. • Built In bias Resistor (R,.,4.7KO)
• Complement to KSR2009

ABSOLUTE MAXIMUM RATINGS, (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
Vceo
VeBO
Ic
Pc
Tj
T8tg

Rating

Unit

40
40
5
100
300
150
-55-150

V
V
V
mA
mW
·C
·C

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta= 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVcao
BVceo
ICBO
hFE
Vce(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

fT
R

Test Condition
Ic= 100,.u\, le=O
Ic=1mA,la=0
Vca=30V, le=O
Vce=5V, 1c=1mA
Ic=10mA,la=1mA
Vca=10V,le=0
f=1MHz
Vce=10V,lc=5mA

Min

Typ

Max

40
40

V
V
0.1
600
0.3

100
3.70

3.2

Unit

250
4.7

,.u\
V
pF
MHz

6.2

KS2

Equivalent Circuit
Collector (Output)

R

Base

(lnputlO----¥r/'.~-__l

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

301

KSR1009 .

NPH ·EPITAXIAL
SILICON
TRANSISTOR
.
.
,

/

10000

~~;.~~t

5000

50C

3000

~,'000

I:

30

Ii

J

100

10

50

5

30

3

10
0.1

0.3 0.5

3

1

5

10

30 50

100

1

3

5

10
IdmA~

30 50

100

300 5001100

COLLECTOR CURRENT

POWER DERATING
400
350

\\

~

\

1\
1\

0

25

ciS

50

75

100

\

125

150

175

SAMSUNG SEMICONDUCTOR

200

.302

KSR1010

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias R.sistor Built In)
T0-92

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R=10KOj
• Complement to KSR2010

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Rating

Symbol

Characteristic

. VCBO
VCEO
VEBO
Ie
Pc
Tj
Tstg

Collector-Base Voltage
Collector-Emiiter Voltage
Emitter-Base Voltage
Collector Current
Collecter Dissipation
Junction Temperature
Storage Temperature

Unit

40
40
5
100
300
150
-55.-150

V
V
V
mA
mW
°C
°C

1. Emitter 2. CoBeeter 3. Base

=

ELECTRICAL CHARACTERISTICS (Ta 25 °C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Coliector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVCBO
BVeEo
leBO
hFE
Vee(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

fr

Test Condition
le= 1001lA, IE=O
IE=1mA,la=0
Vca ""30V, IE=O
VCE ""5V,lc=1mA
le=10mA,la=1mA
Vea=10V,IE=0
f=1MHz
VCE =10V,le=5mA

Min

Max

40
40
0.1
600
0.3

100
3.7

7

R

Typ

250
10

Unit
V
V
jAA
V
pF
MHz

13

KO

· Equivalent Circuit
Collector (Outputl

R

Base

(InputllO---~.,.,..._ _~

Emitter (Gndl

c8

SAMSUNG SEMICONDUCTOR

~03

KSR1010

NPNEPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

COLUOCTOR-EMITTER SATURATION VOLTAGE

10000

1000

..

VeE 5V
R 10K

5000

300

I

01'
" 1000

1011

1

3000

z

leila

R 10K

50C

z

t2
lI!soo

0
1=

~

300

:i

1

c
II:

100
50

i:!

30

'00

i

10

50

J

,

l!

!

30 ,-:-

10

0.1

0.30.5

3

1

5

10

30 50. 100

1c;(mA), COLLECTOR CURRENT

,1

3

5

10

30 50

100

300 500 1000

1c(mA), COUE;CTOR CURRENT

POWER DERATING
400

350

I:
~

200

2

150

~

\

\

r\

\

~ 100

\\

50

25

50

T.I·C~

c8

75

~

100

\

125

150

175

200

AMBIENT TEMPERATURE

SAMSUNG SEMICONDUCTOR

304

KSR1011

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias

Resistor Built In)

• SWitching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R=22KO)
• Complement to KSR2011

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

40
40
5
100
300
150
-55-150

V
V
V
mA
mW
°C
°C

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVceo
BVceo
lceo
hFE
Vce(sat)

Current Gain-Bandwidth Product
Input Resistor

h

Cob

Test Condition
Ic=100flA, le=O
le=1mA,18=0
Vce=30V, le=O
Vce=5V, 1c=1mA
Ic=10mA, 1~=1mA
Vce=10V.le=0
f=1MHz
Voe=10V.lc=5mA

Min

Max

40
40

Unit
V
V

0.1
600
0.3

100
3.7

15

R

Typ

250
22

!lA
V
pF
MHz

29

KO

Equivalent Circuit
Collector (Output)

R

Base

-I

(Input).o--_~~_ _

Emitter (Gnd)

c8

SAMSUNG· SEMICONDUCTOR

305

KSR1012

NPNEPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R=47KO)
• Complement to KSR2012

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic

VeBo
VeEO
VEBO
Ie
Pc

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Rating

Unit

40
40
5
100

V
V
V
mA
mW
°C
°C

300
150
-55-150

Tj

Tstg

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°("
Characteristic

Symbol

Collector-Base Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVCBO
BVcEo
ICBO
hFE
Vce(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

fr
R

Test Condition
Ic=100"A,IE=0
IE=1-mA,IB=O
VcB =30V, IE=O
Vce=5V,lc=1mA
Ic=10mA, IB=1mA'
VcB =10V,l e=0
f=1MHz
Vce=10V,lc=5mA

Min

Typ

'Max

40
40

V
V
0.1
600
0.3

100
3.7

32

Unit

250
. 47

"A
V
pF
MHz

62

KIl

Equivalent Circuit
Collector (Output)

R

Base (lnput:!O----4I/'.'N--_-!

Emitter (Gnd)

c8

SAMSUNG SEMicONDUCTOR

306

KSR1013

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in· bias Resistor(R,= 2.2KIl, R,=47KIl)
• Complement to KSR2013

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic .

Symbol

Collector-Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
·C
·C
1. Emitter 2. ColJeclor 3. Base

·ELECTRICAL CHARACTeRISTICS (Ta
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter l?aturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off) .
Vi(on)
Rl
Rl/R2

BVcEo
BVCEO
ICBO

hFE
Vee(sat)

fr

=25

0

C)

Test Condition

Min

Ic=10jAA,IE=0
Ic= 1 OOJAA, IB=O
VcB=40V, IE=O
VCE=5V, Ic=5mA
Ic= 1 OmA, IB;"0.5mA
VcE =5mA, Ic;=10V
VCB""10V,IE=0
f=1.0MHz
Vce=5V,lc=100jAA
VCE=0.2V, Ic=5mA

50
50

Typ

Max

Unit

0.1

V
V
JAA

68
0.3
250
3.7
0.5
1.5

2.2

0.042

0.047

1.1
2.9
0.052

V
MHz
pF
V
V
KO

Equivalent Circuit
Collector (Output)

R,
Base (Input) --~"""_-r--l

R,
'--_~

.-c8

Emitter (Gnd)

SAMSUNG SEMICONDUCTOR

307

'KSR1014

NPN EPITAXIAL. SIUCON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92

• Switching circuit, Inverter. Interface circuit Driver circuit
.• Built in bias Resistor(R,';;4.7Kfl, R,=47Kfl)
• Complement to KSR2014
.

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector· Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Rating
50
50
10.
100
300
150
-55-150

Vcao
Vceo
VeBO
Ic
Pc
Tj
Tstg

Unit
V

V
V
mA
mW

'c
. 'c

I

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (T. =25°C)
Characteristic

Symbol

Test Condition

Min

.BVcEO
Collector-Base Breakdown Voltage
Collector:Emitter Breakdown Voltage BVceo
Collector Cutoff Current
Iceo
DC CUTrent Gain
hFe
Collector-Emitter Saturation Voltage
Vcelsat)
Current Gain-Bandwidth Product
h
Output Capacitance
Cob

Ic=10jlA.le=0
Ic=100jlA. la=O
Vea=40V. IE=O
Vce=5V. Ic=5mA.
Ic=10mA, la=0.5mA
VCE=5mA.lc=10V
Vca=10V.I.=0
f=1.0MHz
Vce=5Y·lc=100,..A
Vce=0.2V. Ic=5mA

50
50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R 2

Typ

Max

Unit

V.
V

0.1

,..A

0.3

V
MHz
pF

68
250
3.7
0.5
3.2
0.09

4.7
0.1

1.3
6.2 .
0.11

V
V

KO

Equivalent Circ;uit

eoueetor (Output)

Base (Input)

---"""",,_-.---1
R,

1.-.---1 Emitter (Gnd)

C8

SAMSUNG SEMICONDUC1"OR

308

KSR1101

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
SOT·23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=4.7KO R,=4.7KO)
• Complement to KSR2101

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic
Coliector·Base Voltage
Coliector·Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ie
Pc
Tj
Tstg

-50
50
10
100
200
150
-55-150

V
V
V
mA
mW
°C
°C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Characteristic

Symbol

Test Condition

Min

Collector· Base Breakdown Voltage
Collector· Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector· Emitter Saturation Voltage
Current Gain·Bandwidth Product
Output Capacitan.:e

BVcBo
BVcEO
ICBO
hFE
VCE(sat)

50
50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R1
R1/R2

Ic =10,..A, IE=O
Ie= 1 O(),..A, IB=O
VCB=40V, IE=O
VCE=5V, .lc=10mA
Ic=10mA,IB=0.5mA
VCE=5mA,lc:=10V
Vce=10V,IE=0
f=1.0MHz
VCE=5V,lc=100,..A
VcE =0.3V, Ic=20mA

fr
Cob

Typ

Max

Unit

0.1

V
V
,..A

20
0.3
250
3.7
0.5
3.2
0.9

4.7
1

3
6.2
1.1

V
MHz
pF
V
V

KO

Equivalent Circuit
Collector (Output)

Marking

R,
Base (Input)O----IItI'\f/tr---,--t

R,

Emitter (Gnd)

c8

SAMSUNG SEMiCoNDUCTOR

309

~SA1101

NPH, EPITAXIAL SILICON TRANSISTOR
DC CURRENT ~AIN

INPUT ON VOLTAGE
1000

100

50

, Vce-5V
R.- 4.7K
R.- 4.7K

SOl)

30

~~

10

.5

./

. a;

,,;

,g

I

'"

30

05
0.3

0:1

0305

3

5

10

30 50

100

L

10
1

3

1c(mA). COUECTOR CURRENT

5

10

30 50

100

30Q SOl)

1000

Ie (mAl. COUEcroR CllliRENT

. POWER DERATING

INPUT OFF VOLTAGE
32a

VCE-SV

Ii

R,-4.7K
R,-4.7K

,I

1000

230

0
500

"'

I

1

I

300

I

I\.
r\.

100

U

""

}

50

"

30

40
10

o

08
V~OFFI (\II

c8

1.2

18

20

INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

a

25

50

75

'\

'\

100

125

150

175

200

T.r'Cl. AMBIENT TEMPERATURE

31 9

KSR1102

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
• Switching Circuit, Inve!'ler, Interface circuit
Driver circuit
• Built in bias Resistor (R,=10KI1, R,=10KIl)
• Complement to KSR2102

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Veoo
VeEo
VEoo
Ie
Pe
Tj
Tstg

Rating

Unit

50
50
10
100
200
150
-55-150

V
V
V
mA

I
I

i

mW
°C
°C
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CharaCteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voitage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voitage
Current Gain-Bandwidth Product
Output Capacitance

BVeoo
BVeEo
Icoo
hFE
VCE(sat)

Ic= 1OIlA, IE=O
Ic=100IlA,le=0
Vce=40V, IE=O
VCE=fN, Ic=5mA
Ic=10mA,le=0.5mA
VCE=5mA,le=10V
Vce=10V,IE=0
f=1.0MHz
VCE=5V. Ic=1001lA
VCE=0.3V,le=10mA

50
50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

fr
Cob
Vi(off)
Vi(on)
R,

Equivalent Circuit

Max

Unit
V
V

0.1

.1lA

0.3

V
MHz
pF

20
250
3.7
0.5
7
0.9

R,/R2

Typ

10
1

3
13
1.1

V
V
KI1

Marking
Collector (Output)

R,
Base (InputlO---4tIt;rv-...,,---i
R,

EmItter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

311

KSA1102

NPN EPITAxiAL SILICON. TRANSISTOR

. DC CURRENT GAIN

INPUT ON VOLTAGE
1000

100

VeE 5V

R. 10K
Rl 10K

Vce=O.3V
A I -10K
R2-1ot(

50

500

0

0-

_...

5
3

..... 1-'
./

1

30

o. 5
0,3

01

0305

3

lc(mA~

5

10

30 50

/

10

lOO

30 50

COLLECTOR CURRENT

300 500

100

1000

Ie (mA). COLLECTOR CURRENT

INPUT OFF VOLT AGE

POWER DERATING
320

VcE =5V
A,=10K
R1 =10K

II

1000

230
Z

i

I

15

t~

240

200
160

·120

1,so

'" ,
l\.

\.

'\

40

10

o

0.4

08

12

16

2.0

V4OFF) (V) INPUT OFF VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

o

25

~

T,('~

75

-"

100

125

150

175

200

·AMBIENT TEMPERATURE

312

KSR1103

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=22KU, R,=22KIl)
• Complement to KSR2103

50T-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Coliector·Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VeBO
VeEo
VEBO
Ie
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
200
150
-55-150

V
V
V
mA
mW
°C
°C

I

'1. Base 2. Emitter -3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth· Product
Output Capacitance

BVcBO
BVcEO
ICBO
hFE
VCE(sat)

Ie'" 1 O~A. IE"'O
Ic= 1 OOJ.lA. la=O
Vca"'40V. IE=O
VCE=5V. Ic=5mA
Ic"'10mA.la=0.5mA
VCE"'5mA.lc=10V
Vca'" 1 OV. IE"'O
f"'1.0MHz
VCE"'5V. Ic'" 1 OOJ.lA
VCE"'0.2V. Ic=5mA

50
50

Input Off Voltage
Input On Voltage
Input Resistor
ReSistor Ratio

h
Cob
Vi(off)
Vi(on)
R,

Max

Unit

0.1

V
V
J.lA

56
0.3
250
3.7
0.5
15
0.9

R,/R2

Typ

22
1

3.0
29
1.1

V
MHz
pF
V
V
KIl

Marking

Equivalent Circuit
Collector (Outputl

R.

8ase (Inputlo---4V'o,.,....--,,---j
R,

Emitter (GndJ

c8

SAMSUNG SEMICONDUCTOR·

313

KSR1103

NPN EPITAXIAL SILICON TRANSISTOR
INPUT ON.YOLTAGE

DC CURRENT GAIN

100

1000
VCE=5V
R,=22K

VeE O.2V
R, -22K
Rz-22K

50

300

30

I

w
c
!:;

"

Iil

0

>

...30

10

Z

5

I-

:::>

~

R.-22K

500

/~
'oo

!!

i!lO
/.

-

i--"

1

0.1

0.3 0.5

3

,

30

10
5

30 50

10

3

100

5

10

30 50

100

300 500

1000

Ie (mAl, COLLEC'IOR CURRE~T

Ie (mAl, COLLEC'IOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING
320

VCE-5V

R,-22K
Ra-22K

I-

1000

230

50~

i!i. 240

Z

~

W

a:
a: 300

:::>

"a:0

I

I-

"......

100

"i

50

W

o

,
0.4

08
V~OFF)

c8

~

120

~

30

10

200

I~

0

~

I

180

:'\.

"

'I\.

80
40

12

1.8

20

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

.0

'\

'\
25

50

75

100

125

150

175

200

T,("O), AMBIENT TEMPERATURE

314

KSR1104

NPN· EPITAXIAL SILICON TRANSISTOR

SWITCHING ·APPLICATION .(Bias Resistor Built In)
• Switching Circuit; Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,=47KO, R,=47KU)
• qomplement to KSR2104 .

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ie
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
200
150
-55-150

V
V
V
mA.
mW
°C
°C
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVCBO
BVcEo
ICBO
hFE
VCE(sat)

Ic= rOjAA, IE=O
Ic=100jAA,IB=0
VCB=40V, IE=O
VCE=5V, Ic=5mA
Ic= 1 OmA, IB=O_5mA
VCE=5mA, Ic-10V
VCB=10V, IE=O
f=1.0MHz
VCE=5V,lc=100jAA
VCE=O.3V, Ic=5mA

50
50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

h
Cob
Vi (off)
Vi(on)
R1
R1/R2

Max

Unit

0_1

V
V
.jAA

68
0.3
250
3.7
0.5
32
0.9

Equivalent Circuit

Typ

47
1

3
62
1.1

V
MHz
pF
V
V
KG

Marking
Collector (Output)

R,
Base (Input)O----JY\of!lr--,.---j

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

315

NPN EPITAXIAL SILICON tRANSISTOR

KSR1104

.

DC CURRENT GAIN

INPUT ON VOLTAGE
1000

100
Vce-O.3V
Rl""47K
A, 47K

50

VeE 5V
Rl -47K
A, 47K

500

30

10

-

i"""

-

1

30

05
.0.3

0.1

3

03 0.5

5

10

30 50

10

100

1

3

Ic(mA~ COLLECTOR CURRENT

5

10

INPUT OFF VOLTAGE

1000

0-

,~

I.

z

500

i

II

300

I

100

I
I

t)

50
30

"

240
200
180

~

"'"

120
0

'\

0

10

o

08
V~OFF)

c8

1000

230

0

i

300 500

100

POWER DERATING
320

Vce=5V
R,=47K
R2 -47K

iii0:

30 50

Ie (mA), COUECIOR CURRENT

12

18

20

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

o

25

50
T.(·C~

75

'\

100

125

150

175

200

AMBIENT TEMPERATURE

316

KSR1105 ~

NPN EPrrAXIAL SILICON TRANSISTOR.

SWITCHING APPLICATION

(Bias Resistor Built In)
50T-23

• Switchi'ng Circuit,. Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R •• 4.7KO, R.=10KOI
• Complement to KSR2105

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Rating

Unit

50
50
10
100'
200
150
'-55-150

V
V
V
mA
mW
·C
·C

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (max)
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
. VeBO
Ic
Pc
Tj
Tstg

.

•

. 1. Base 2. Emitter 3. Coliector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic

Symbol

Te.t Con~ltlon

Min

Collector-Base Breakdown Voltage
Collector-Emitter .Breakdown Voltage
Collector Cutoff Current
DC Current Gain
· Collector-Emitter Saturation Voltage
Output CapaCitance

BVcBO
BVceo
IcBO
hFe
Vce(sat)
Cob

Ic= 1OIlA, le-O
le= 1 OO,..A, la=O
Vca=40V, le=O
Vce=5V, Ic=5mA
Ic=10mA,ls=0.5mA
Vca=10V,le=0
f=1MHz
Vce=10V, Ic=5mA .
Vce=5V, Ic=1001lA
Vce=0.3V, Ic=20mA

50
50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

fr
Vi(off)
VI(on)
R,
R,/R 2

Typ

Max

Unit

0.1

V
V
IlA

30
0.3
3.7
250
0.3
32
0.42

4.7
0.47

2.5'
6.2
0.52

V
pF
MHz
'V
V

KO

Marking

Equivalent Circuit
Coli ector (Output)

R,
Base

(Input)~----'w..>--..,-l

R,

Emitter (Gnd)

c8SAMSUNG SEMICONDUCTOR'

317

,':,NPN' EPlTAXtAt:'SILICON TRANSISroR
''1 " '

..
'

DC CURRENT'GAIN

','

,NPUT ONVOLTAGf;"

1000

100
VCE~,0,3V

500

R2

300

-

'~

...

100

w

50

Z

II:

r'-+-HH+~--~~~

"
~

v

8

i

..

10

30

w

i...

B 30

R,-4.7K

50

10K

' >10

3

~
'c
-2

,.

05
0,3

'1~0~,1~~0~,3~U.~--~3~~5~~10~.--~30~~50~~'00
Ie(mA~

0,1

03 05

INPUT 'OFF VOLTAGE

3

IclmA~

COUECTOR CURRENT

•

5

10

30 50

100

175

200

COUECTOR CURRENT

POWER DERATING
320

10000
VCE-5V

5000
3000

R,=4.7K

280

&,,-tOK

0

1000
0

L

0

.\..
'I\.

0

'r\.
'\

0

5
3
1
0.1

•

cas

0

0.3

.1

0.5

0.7, 0.9

V~OFF)(V),

1.1

13

1.5

1.7

INPUT OFF VOLTAGE

SAM$UNG SEMICONDUCTOR

1.9

2.1

o

25

50
T,('C~

75

\

lQ()

125

150

AMBIENT TEMPERATURE

318

KSR1106

NPN EPITAXIAL SILICON TRANSISTO,R

SWITCHING APPLICATION

(Bias Resistor Built In)
SOT-23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built In bias Resistor (R.=10KO, R,=47KO)
• Complement to KSR2106

ABSOLUTE MAXIMUM· RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCf1()
Veeo
VeBO
Ie
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
200
150
-55-150

V
V
V
rnA
mW
·C
·C

•

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=2S0C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
, DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance
Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

BVceo
BVcEO
ICBO

hFE
Vce(sat)
Cob

h
Viloff)
Vilon)
R,

Test Condition

Min

Ic= 1O,.A, le=O
le= 1OO,.A, le=O
Vce=40V, le=O
Vce=5V, Ic=5mA
Ic=10mA, le=0.5mA
Vce=10V,le=0
t .. 1MHz
Vce==10V, Ic=5mA
V~e=5V, Ic=100,..A
Vce=0.3V,lc=1mA

50
50

Unit

0.1

V
V
,.A

0.3
3.7
250
0.3

0.19

Equivalent Circuit

Max

,

68

7

R,/R2

Typ

10
0.21

1.4'
13
0.24

V
pF
MHz
V
V

KO

Marking,
Colleclor

(Output)

R,

Base

(InputlO---"""'~-,----i

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

319

KSR1106

NPN EPITAXIAL SILICON TRANSISfOR
INPUT ON VOLTAGE

DC CURRENT GAIN

100

1000
VeE O.3V

so

R, 10K
R "'47K

SOO

0

300

Ul-

i...
~
3E

~

I

01--

OJ

5

100

u

30

i

10

:>

3

L

~

,.I

..!i
:I
g

1

o. 5
o. 3

0.1

1--

50

./

3-

0.30.5

3

5

10-

30 50

- 10!-:.I:--"'-::0'-::3"'Otc5!'-'"'-';--~3""""'5"""J..I'-!;0:--"""3:t0:'-:':50:!-'-":':!00·

100

Ic(mA~

IclmA), COLLECTOR CURRENT

INPUT OFF VOLTAGE
320

10000

VCE""5~~
Rl=1~~

5000
3000

R2 -47K

I

1/

1000

280

i
z

I

'"

~

240

200
180

I"

~ 120

~

0
5
3

1
0.1

~
1\

80

1 '\

0

0.3

05

07

09

Y~OFF)(V),

c8

COI.LECTOR CURRENT

POWER DERATING

1.1

13

15

1.7

19

INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

21

o

25

50
T~·C}.

75

-

"

100

125

150

175

200

AMBIENT TEMPERATURE

320

NPN EPITAXIAL SILICON TRAN$ISTOR

KSR1107

SWITCHING APPLICATION (Bias Resistor Built In)
• Switching Circuit, Inverter, Interface circuit
. Driver circuit
• Built in bias Resistor (R,,,,22KO, R,,,,47KOI
• Complement to KSR2107

S01-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temper~ture
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
200
150
-55-150

V
V
V
mA
mW
°C
°C

1 Base 2. Emitter 3

•

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)

Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVcBo
BVcEo
ICBO
hFE
VCE(sat)
Cob

50
50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

fr

Ic= 1 OJAA. 'E=O
Ic=100JAA,le=0
Vce=40V. 'E=O
VCE=5V. Ic=5mA
Ic=10mA.ls=0.5mA
Vcs= 1OV. IE=O
f=1 Mliz
VCE=5mA. Ic=10V
VcE =5V, Ic=100jAA
VCE=0.3V. Ic=2mA

Vi(off)
Vi(on)
R,
R,/R 2

,

Typ

Max

Unit

0.1

V
V
jAA

68
0.3
3.7
250

OA
15
0.42

22
0.47

2.5
29
0.52

V
pF
MHz
V
V
KO

Marking

Equivalent Circuit
Colieclor (Oulpul)

A,
Base (Inpul)lo---4tI>."""-r--I

R,

Emlller (Gnd)

=8

SAMSUNG SEMICONDUCTOR.

321

C\I
C\I

l-

C')

INPUT ON VOLTAGE

U)

z
~
z

...

DC CURRENT GAIN
'000
Vee- O.3V ..,
Rl=22K

,

~

~

Ii

8::::i

i

iB .'30'/=

...~

>

A.
W

Z
A.,
Z

CO 100

>

'I::::

0

~

8

~

I

i

o

)I

0,5

E
.F

0,3

3

t1tt1j

~

0,'

1

0.30.5

3

Ic:ImA),

5

30 50

10

100

0,'

3

0.30.5

INPUT OFF VOLTAGE

~~2~~-=

a:

280

B

... 47K-

I

, '000

~

240

~

lI!3OO

8

~200
OJ
i5

I

':

I

160

2

30

~ 120

E

l

} ' 10

::l
C
Z

"

\.

....:

l
1
0.1

r\.

80

'\

40

I
0.3

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

o

2.1

25

50

75

T.l°C). _

V,(OfF)(V), INPUT OFF VOlTAGE

,It

o
o
iw
en

.

;

,...,
o
,..

100

POWER'DERATING

li500

w

30 50

10

320

, 5000
3000

~::I

5

fc:(mA), COlLECTOR CIlIIRENT"

COUECTOR CURRENT

'10000

§

-47K

o

300

g

en

VCE-5~t
R l -22K

t=

500't--

R2=471<

",

100

125

,~
::l
150

1EIIIPERATURE

175

200

en

~

qp

fA,
.....

'~i~' .

NPN EPITAXIAL SILICON TRANSISTOR

KSR1108

SWITCHING APPLICATION (Bias Resistor Built In)
SOT-23

• Switching Circuit, Inverter, Interface circuit
Drivdr circuit
• Built in bias Resistor (R.=47KO, R,=22KO)
• Complement to KSR2108

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCe£)
VCEO
VEe£)
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
200
150
-55-150

V
V
V
mA
mW
°C
°C

•

1. Base 2: Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 °C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation .voltage
Current Gain-Bandwidth Product
Output CapaCitance

BVCBO
BVcEo
ICBO
hFE
Vcdsat)

50
50

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R 2

Ic= 1 0j.iA, IE=O
Ic= 1OO/i A,ls=0
Vcs=40V, IE=O
VCE=5V, Ic=5mA
Ic.= 1OmA, Is=0.5mA
VCE=5mA,lc=10V
Vcs=:10V, IE=O
f=1.0MHz
VCE=5V, Ic= 1 OOj.iA
VCE=0.3V, Ic=2mA

fr

Max

Unit

0.1

V
V
j.iA

56
0.3
250
3.7
0.8
32
1.9

Equivalent Circuit

Typ

47
2.1

4
62
2.4

V
MHz
pF
V
V
KO

Marking
Collector (Output)

A,
Base (Jnput)o---4lI'o~---'r---t

A,

Emitter (Gnd)

c8

SAMSUNG SEMICONDucToR

323

'·NPNEPITAXIAL SIUCON TRANSISTOR

. KSR1108

DC CURRENT GAIN

INPUT ON VOLTAGE
1000

100

VCE=5V
R,=47K
Rt 22K:

Vce=O.3V

A,=47K

50

..
I..l
I

500

A2= 2K

30

300

I

1Df--

'3

e

./

Iil

100

i

50

8

I

:$

7

J7

30

0.5
0.3

0.1

03 OS

3

5

10

3D 50

100

0
3

1c:(mA), COLLECTOR CURRENT

5

10

30 50

300 500

100

1000

Ie (mAl. COLLECIOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING
VOE=5V

320

R,=47K
Ftz-22K

1000

230

0
0

I

!/

0

1'\

0

"

0

"'\

I

0

40

0

o

0.8
V~OFFI

c8

12

1.6

2.0

(VI INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

o

~.

25

50· 75

'\

100

125

150

175

200

T,("C), AMBIENT TEMPEIIATUAE

324

KSR1109

NPN EPITAXIAL SILICON TRANSlsroR

SWITCHING APPLICATION

(Bias Resistor Built In}

•
:
•
•

Switching Circuit, Inverter, Interface circuit
Driver' circuit
.
Built in bias Resistor (R=4.7KO)
Complement to KSR2109

$OT·23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

40
40
5
100
200

V
V
V
mA
mW
·C
·C

150
-55-150

ELECTRICAL CHARACTERISTICS (Ta
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
,
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVcso
BVCEO
ICBO
hFE
VCE(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

fT
R

••

1. Base 2. Emitter;3. Collector

=25 OC)

Test Condition
Ic =100,..A, IE=O
Ic"1mA,IB=0
VCB=30V, IE"O
VCE=5V, Ic=1mA
Ic=10mA, IB=1mA
Vca=10V,IE-0
f==1 MHz
VcE =10V,lc=5mA

Min

Typ

Max

40
40
0.1
600
0.3

100
3.70

3.2

250
4.7

6.2

Unit
V
V
,..A
V
pF
MHz
KO

Marking

Equivalent Circuit
Colleclor (Oulpul)

R
Base (lnpul}}O---4

300

!

1.0=,

.C!/

i

l/
-

&i

~

~

100

g

50

1

30

i"'"

,.I

0.5

f

/

0.3

0.1

0.3 05

3

.1

5

10

30 50

10

100

1

5

3

1c:(mA), COLLECTOR ~URRENT

"~:

'.

"

30 60

10

300 500 1000

100

IelmA) COLLECTOR CURRENT

..
INPUT OFF VOLTAGE

POWER DERATING

1000

400

VCE-5V

fIt.-4.7K
R,-4.7K

350

Z

3DC

0

0

i

I

I

II:

~...
~
;E

250

r\

"

~

200

150

100

\

1\
\

. 50

\

0

0.4

0.8

1.2

1.8

2.0

o

.

SAMSUNG SEMICONDUcroR

50

75

100

125

150

175

200

T.(°C), AMBIENT TEMPERATURE

VAOFF) IV) INPUT OFF VOLTAGE

c8

25

(

" 334

KSR1202.

NPN· EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92S

• Switching circuit, Inverter. Interface circuit Driver circuit
• Built in bias Resistor (R.=10KO, R,=10KO)
• Complement to KSR2202

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Rating
50

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

50
10
100
300
150
-55-150

Unit
V
V
V
mA
mW
°C
°C.

I

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVceo
BVceo
lceo
hFE
Vce(sat)

50
50

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Viloff)
Vilon)
R,
R,/R2

Ic= 1O,..A. le=O
Ic=100,..A, le=O
VcB=40V, le=O
Vce=5V, Ic=5mA
Ic=10mA,le=0.5mA
Vce=5mA,lc=10V
Vce=10V,le=O
f=1.0MHz
Vce=5V, 10=100,..A
Vce=0.3V,lc=10mA

IT

Typ

Max

Unit

0.1

V
V
JAA

30
0.3
250
3.7
0.5
7
0.9

10
1

3
13
1.1

V
MHz
pF
V
V

KO

Equivalent Circuit
~olleClor

(Oulpul)

R,

""v---.--I

Base (Inpul)--........

Rt

Emiller (Gnd)

c8

SAMSUNG SEMICONDUcroR

335

:KSA1202

NPN .EPITAXIAL' SILICON TRANSISTOR
DC CURRENT GAIN

INPUT ON VOLTAGE
100

1000

VeE 5V
R.=10K
Rz=10K

Vce=O.3V
A1=-10K

0

A2""10K

500

0

~
>

Z

300

C

0

CI

0

..
~

~

1

.>

a:
a:

-

3

'E
S:

;,-V

Z

5

I

::> 100
(,)
(,)
Q

1

50

'/

30

O. 5

I

O. 3

01.

3

03 05

5

10

30 50

100

10
3

1

5

30 50

10

100

300 500 1000

lc(mA), COLLECTOR CURRENT

lelmA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
400

VCE=5V

~

Z

500

'"a:
::>

300

R,'"'"1QK
A1 =10K

I

1000

Z
0

a:

I

~
~

...

~

I

(,)

:;:...

}

30e

;

250

a:

200

..

150

l

100

~\

\

Q

100

"'0~

50

iE

0

(,)

350

30

1\,

\

\
r"\.

50
10

o

0.4

0.8

1.2

1.6

2.0

i
25

50

75

100

\

125

150

175

200

VdOFF) (V) INPUT OFF VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

336

KSR1203

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92S

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R,=22KO, R,=22KO)
• Complement to KSR2203
'

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emitter 2. Collector 3. ease

ELECTRICAL CHARACTERISTICS (Ta

=25 °C)

Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
.DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance.

BVceo
BVceo
lceo
hFe
Vee(sat)

1e=10,..A,le=0
Ic=100,..A,IB=0
VCB=¢OV, le=O
Vce=5V, Ic=5mA
Ic=10mA,le=0.5mA
Vce=5mA.lc=10V
VCB=10V. le=O
f=1.0MHz
Vce=5V. Ie= 1 OOlolA
Vce=0.2V. Ic=5mA

50
50

Input Off Voltage
Input On Voltage
Input Resistor
ReSistor Ratio

IT
Cob
Vi(off)
Vi(on)
R,

Max

Unit

0.1

'V
V
,..A

56
0.3
250
3.7
0.5
15
0.9

R,/R 2

Typ

22
1

3.0
29
1.1

V
MHz
pF
V
V
KO

Equivalent Circuit
Collector (Output)

R,
Base (Input) --~""_"""T"--I

R,

1-.----1 Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

337

NPN ~EPlTAXIAL SILICON. TRANSISTOR

KSR1203
INPUT ON VOLTAGE

DC CURRENT GAIN

100

Vee-0.2V

1000

Vee -IlV
22K

R.-

R.-22K
R,-22K

50

RJ ·'22

500

V ..
./
./

t-- 1-"

VI--"
1
0.1

0.30.5

3

1

5

10

30

10

1

3

IcCmAI COLLECTOR" CURRENT

5

10

30 60

300 500 1000

HIO

IcCmA) COLLECTOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING
VCE-SV

400

A.-22K
RJ -22K

1000

!iii

500

~

300

350

c

a:

()

.~

t;

i
i

\\
"-

J

100

\

0
50

\

30

i\:

50
10

o

0.'

-

·cS

0.8

V~OFF)

1.2

1.6

2.0

o

25

50

75

100

\

125

150

175

200

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

338

KSR1204

,

~

>

NPN EPITAXIAL SILICON TRANSISTOR

•

SWITCHING APPL,ICATION

(Bias Resistor Built In)
TO-92S

Switching circuit, Inverter. Interface circuit Driver circuit
o Built in bias Resistor(R, =47KO, R,=47KO)
'0 Complement to KSR2204
0'

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter,Base Voltage'
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcao
VCEO
VEao '
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150·
-55-150

V
V
V
mA
mW
·C
·C

·1

1, Emiiter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVceo
BVceo
ICBO
hFE
Vce(sat)

Ic= 1OjAA. le=O
Ic= 1oq/AA. la =0
Vca=40V. IE=O
VCE=5V. Ic=5mA
Ic=10mA.la=0.5mA
VCE=5mA.lc=10V
Vca=10V.IE=0
f=1.0MHz
VCE=qV. Ic=100jAA
Vce=0.3V. Ic=5mA

50
50

Input Off Voltage
Input On Voltage
Input Resistor '
Resistor Ratio

iT
Cob
Vi(off)
Vi(on)
Rl
Rl/R2

Typ

Max

Unit
V
V

0.1

/AA

0.3

V
MHz
pF

68
250
3.7
0.5
,32
0.9

47
1

3
62

V
V
KO

1.1

Equivalent Circuit
Collector (OlJtput)

R•

ovvv---,--1

. Base (Input) - -......

R,
~_--I

c8

Emitter (Gnd)

SAMSUNG SEMICONDUcroR

·339

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN
INPUT ON VOLTAGE
1000

'00

~ f-=

Vce'""O.3V
R,-47K
R -47K

50

500 f--

30

a

c,;.w
A,-47K
R,-47K

300

.Sj
c

,--

!c:J

10 1---.

~

l-

IB

i

..

~

/

'00

(.)

,.i

1
0.5

50
30

0.3

0'

3

0.3 05
Ic(mA~

5

30 50

'0

'0

'00

1

5

3

COLLECTOR CURRENT

3050

'0

300 500 1000

'00

Ic(mAI COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
400

VCE-6V

A,-47K
A-47K

1000

I

350

i§

30c

!i'
...

250

,
I,

~

\

~ 200

~

\:

\

'50

...

'00

~
\:

0

'0

o

0.'

0.8

1.2

2.0

VAOFF) M INPUT OFF VOLTAGE

. c8,SAMSUNG SEMICONDUCTOR

\
25

50
ToI°~

75

100

125

150

175

200

AMBIENT TEMPERATURE

340

KSR1205

NPN EPITAXIAL SILICON TRANSISTOR'

SWITCHING APPLICATION

(Bias Resistor Built In)
TO·925

• Switching Circuit, Inverter, tnterlace circuit
Driver circuit
• Built in bias Resistor (R,=4.7KO, R,=10KO)
• Complement to K5R2205

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Coliector·Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VC80
Vceo
Ve80
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
°C
°C

I

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVceo
BVceo
ICBO
hFe
Vce(sat)
Cob

50
50

CurrenI' Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor ,
ReSistor Ratio

fr

Ic=101lA, le=O
Ic=100IolA,le=0
Vce=40V, le=O
Vce=5V, Ic=5mA
Ic=10mA,le=0.5mA
Vce= 1OV, le=O
f=lMHz
Vce=10V,lc=5mA
Vce=5V, Ic=1001olA
Vce=0.3V, Ic=20mA

Vi(off)
Vi(on)
Rt
Rt /R 2

Typ

Max

Unit
V
V

0.1

lolA

0.3

V
pF

30
3.7
250
0.3
32
0.42

4.7
0.47

2.5
6.2
0.52

MHz
V
V

KO

Equivalent Circuit
Collector (Outputl

R,

sa... (lnputlO----,~f'or-__,-_I
R.

EmItter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

341

;J($R120S·

NPN· EPITAXIAL SILICON TRANS1STOR
INPUT ON VOLTAGE

DC CURRENT GAIN

100

1090

VCE=O.3V
,~,""4.7K

50

..

30

"!:;
C

VCE=5

A,=4

500

~f-

.R,-1 OK

300

z
~

10

0

I

>

!;

~
~

,.I

i-"

100
50
30

V

10
05
0.3

0.1

./
03 05

3

5

10

30 50

100

1
0.1

0.3 05

le(mA), COLLECTOR CURRENT

3

INPUT OFF VOLTAGE

100

POWER DERATING

~,;,,::~c

5000
3000

R2""1~_

350

1000

\\

!i500

lI!300

i'l

I

r\

\

\

5

r\

0

3
1
0.1

30 50

10

400

10000

,>.,'

5

Ie(mA). COLLECTOR CURRENT

I
0.3

0.5

0.7

0.9

1 1

1.3

1.5

1.7

1.9

2.1

25

50

75

100

\

125

150

175

200

T~·C~ AMBIENT TEMPERATURE

:8

S.AMSUNG SEMICONDUCTOR

342

NPN EPITAXIAL SILICON TRANSISTOR

KSR1206

SWITCHING APPLICATION (Bias Resistor Built In)
• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Buill in bias Resistor (R,=10KO, R, =47KO)
• Complement to KSR2206

TO-925

·.ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

I

VC80
VCEO
VE80
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300·
150
-SS-150

V
V
V
mA
mW
·C
·C

I

1 Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)

Characteristic

Symbol

Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVcEo
BVcEo
ICBO
hFE
VCE(satl
Cob

Current Gain-Bandwidth.Product
Input Off Voltage
Input On Voltage
Input ReSistor
Resistor Ratio

fT
Vi(off)
Vi(on)
R,
R,/R 2

Ic= 1OIolA,IE=0
Ic";1001oiA, la=O
Vca=40V, IE=O
VcE=5V, Ic":,SmA
Ic=1.0mA,la=0.5mA
Vca=10V, IE=O \
f=1MHz
VcE=10V, Ic=5mA
VCE=5V, Ic= 10010iA
VcE =0.3V,lc=1mA

,

Min

Typ

Max

Unit

0.1

V
V
lolA

50
50

68
0.3
3.7
250
0.3
7
0.19

10
0.21

1.4
13
0.24

V
pF
MHz
V
V
KO

Equivalent Circuit
Collector IOutput)

R,

Base Ilnput)o---4>1;~---,,..--l

R,

Emitter IGnd)

c8

SAMSUNG SEMICONDUCTOR

343

'. NPN EPITJ~)qAL SILICON TRAN'SISTOR.
DC CURRENT GAIN

INPUT ON VOLTAGE
1000

100
VeE O.3V
R, 10K
R2""47K

0

500
300

0

I-0
5
3

./

1

~

100

a:
a:
::>
u
u

30

!Zw

50

0

10

i

f-.

/

5

01

3f-'-- .

..

3

3

03,05

5

10

01

3050 .100

0.3 05

3

INPUT OFF VOLTAGE

100

400
VCE.-5V
R1 =lOK
A2""47K

5000
3000

~
r.-

II

350

I
Z

a:

~

{
Ii:

30c

250

1\

\

200

\.

\

150

100

5

3

1\,

r\

0

a5

07

0.9

1 1

13

15

1.7

1.9

VjOFF)(V), INPUT OFf VOLTAGE

c8

30 50

10

POWER DERATING

10000

1

5

1c(mA), COLLECTOR CURRENT

lc(mAI, COLLECTOR CURRENT

SAMSUNG SEMICONDUCTOR

21

25

50

75

100

\

125

150

175

200

T.(°C), AMBIENT TEMPERATURE

344

NPN EPITAXIAL SILICON TRANSISTOR

KSR1207

SWITCHING APPLICATION (Bias

Resistor Built In)

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=22KO, R.=47KO)
• Complement to K5R2207

TO-925

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcao
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
·C
·C

ELECTRICAL CHARACTERISTICS (Ta
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-I;mitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance
Current Gain-Bandwidth Prot\uct
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

BVceo
BVceo

leBO
hFe
Vce(sat)
Cob

fr
Vi(off)
Vi(on)

=25

0

C)

Test Condition

Min

Ic=10,..A,le=0
Ic=100,..A,1 8 =0
VcB=40V, le=O
VcE =5V, 1e=5mA
1c,:,10mA, IB=0.5mA
VCB= 1OV, IE=O
f=1MHz
VCE=5mA,lc=10V
VcE=5V,lc=100,..A
VcE =0.3V, Ic=2mA

50
50

Rl

Typ

Max

Unit

0.1

V
V
,..A

68
0.3
3.7
250
0.4
15
0.42

Rl/R2

•

1. Emitter 2. Collector 3. Base

22
0.47

2.5
29
0.52

V
pF
MHz
V
V
KO

Equivalent Circuit
Collector (Output)

R,
Base (Input~---AI'''''''-:--.--l

R,

Emitter (Gnd)

=8 SA~SUNG

SEMICONDUCTOR

345

KSR1207'

NPN EP.ITAXIAL SILICON TRANSistOR
(

.

INPUT ON VOLTAGE

.DC CURRENT GAIN

100
VCE-O 3V
R1 ... 22K
R,-47K

0
0

!

or--

1';11--··• • •

5
3

....... "'"

1

...... 1-"

Ii

J

5

10

_

_

O. 3

0.1

0.30.5

3

5

10

30 50

100

1c:(mA), COLLECTOR CURRENT .

1c(mAl. COLLECT.OR CURRENT

INPUT OFF VOLTAGE

POWER DERATING

10000

400
VCE=5~~

5000

R'-22~=

3000

350

R2-4,7K

/

i!i
~

0

J

I

300

250

~. \
r\.

~ 200

0
0

2

..~

0

~

1.50

100

5

3
1
0.1

I\.

.50

I
03

0.5

07

0.9

V~OFF)(V),

c8

~,

1.1

13

1.5

1.7

1.9

INPUT. OFF VOLT.AOE

SAMSUNG SEMICONDUCTOR

:p

i
25

50

75

100

\

125

150

175

200

T.,("C}, AM8I.ENT. T.EMPERAT.URE

346

KSR1208

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92S

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built In bias Resistor (R,=47KO, Rl=22KIl)
• Complement to KSR2208

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCB()
Vceo
VEso
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta
Characteristic

Test Condition

Min

Ic= 1 OjoiA, le=O
Ic=100joiA,18=0
VCB=40V, le=O
Vce=5V, 1e=5mA
Ic=10mA,18=0.5mA
Vce=5mA,lc=10V
VCB=10V,le=0
f=1.0MHz
Vce=5V, Ie= 1OOjoiA
Vce=0.3V, 1e=2mA

50
50

Symbol

! Collector-Base Br.eakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Galn
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

BVceo
BVcEo

leBO
hFE
Vce(sat)

h
Cob
Vi(off)
Vilon)
Rt
Rt /R2

=25 °C)
Typ

Max

Unit

0.1

V
V
tJ A

56
0.3·
250
3.7
0.8
32
1.9

47
2.1

4
62
2.4

V
MHz
pF
V
V
KO

Equivalent Circuit
Collector (Outpull

R,

Base (Input)

---...vV---,--i
R,

L..-----i

c8

Emitter (Gnd)

SAMSUNG SEMICONDUcroR

347

NPN EPITAXIAL SILICON TRANSISTOR

KSR1208

DC CURRENT GAIN

INPUT ON VOLTAGE

,

'

1000

100

VeE -5V
R,- 47K
R.- 22K

Vce-O.3V

R, 47K

50

R2=22K

500

30

Z

C

300

(II

-

l-

V

I

B

..

i"""

CJ

J

1

100
50,_
30

0.5
0.3

0.1

0.30.5

3

5

30 50

10

100

10

1

3

5

30 50

10

100·

Ic:(~~ COLLECTOR CURRENT

l.,(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
400
VCE-5V

R,-47K

_ R.-22K

1000

Ii
W
!!iCJ
IIC

500
0

300

I

IIC

...~...

350

1\

\

II

\.

\

100
0

0

'\

CJ

j

50

II

30

II·
0.4

0.8

V~OFF)

c8

1.2

1\

0

II

'\

I
1.8

2.0

(V). INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

25

50

75

100

125

150

175

200

T,(°C~ AMBIENT T~PERA1URE

348

KSR1209

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
TO-928

• Switching Circuit, Inverter, Interface circuit
Orlver circuit
• Built in bias Resistor (R=4.7KO)
• Complement to KSR2209

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector· Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature.

VCBO
VCEO
VEeo
Ic
Pc
Tj
Tstg

Rating

Unit

40
40
5
100
300
150
-55-150

V
V
V
mA
mW
DC
DC

•

1. Emiiter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 °C)

Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance

BVcEo
BVcEo
ICBO
hFE
VCE(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

h

Test Condition
Ic= 1001lA. IE=O .
Ic= 1mA, '&=0
Vca.-30V, IE-O
Vce-5V,lc=lmA
Ic-1QmA.ls-lmA
Vee- 1QV.IE -Q
f-1MHz
Vce=l'OV. Ic"5mA

Min

Max

Unit
V
V

40
40
0.1
6'0'0
'0.3

100
3.7'0

3.2

R

Typ

25'0
4.7

6.2

IIA
V
pF
MHz
KQ

Equivalent Circuit
Collector (Output)

R
Base

(InputlO---~

_ _---1

Emilier (Gnd)

c8

SAMSUNG SEMICONDUcrOR

349

DC CURRENT GAIN
0000

1000

5000

50C

~

3000

z

i
i
i

!

lella-'10/1
R=4.7K

300

100 ' - . t

50
30

10

J

0.1

0.30.5

1

3

IcCmA~

5

10

305

3

COLLECTOR CURRENT.

350

"\
\.

\
r\

50

25

50

75

100

\

125

150

175

. T~·C~ AM~ENT TEMPERATURE

c8

,1,0
1cC~

POWER DERATING

\

~

SAMSUNG SEMICONDUCTOR·

200

30 50

100

300 500 1000

COLLECTOR CURRENT

NPN EPITAXIAL SILICON TRANSISTOR

KSR1210

SWITCHING APPLICATION (Bias Resistor Built In)
To-92S

• Switching ,Circuit. Inverter. Interface circuit
Driver circuit
• Built In bias Resistor (R=10KIl)
• Complement to KSR2210

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
-Junction Temperature
,Storage Temperature

Rating

Symbol

40
40

VCBO
VCEO
VEBO

5
100
300
150
-55-150

Ie

Pc
Tj
Tstg

Unit
V
V
V
mA
mW
°C
°C

•

1, Emitter 2, Collector 3, Base

'ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characteristic
Collector-Base BreakQown Voltage
Emitter-Emitter Breakdown Voltage'
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance
Current Gain-Bandwidth Product
,
Input Resistor

Symbol
BVCBO
BVCEO
ICBO

hFE
Vcelsat)
Cob

fT,

Ic=100/lA. IE=O
le==lmA.le=O
Vca=30V. le=O
Vce=5V.lc=lmA
ic= 1OmA. le-l mA
Vea-l0V.le""0
f""1MHz
Vce=10V.lc=5mA

Collector (OUlput)

R
, Base IInput)O----~'¥_---I

Emitter (Gnd)

SAMSUNG SEMICONDUCTOR

Typ

, Max

40
40

,

0.1
600
0.3

100

3.7
7

R

Equivalent Circuit

c8

' Min

Test Condition

250
10

Unit
V
V
/lA
V
pF
MHz

13

KO

KSR1210

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN .

COlLECTOR-EMITTER SATURATION VOLTAGE

gflI

10000

..

VCE""SV
A-10K

SOO0

~

3000

leila 10/1
R=10K

soc
300

~

!!

>

~,OO0

Z
0

Ii
I

i

500
U 300

g

i

1000 _ _

100

1=:.

50
30

S

.!

100

i

10

~

0

>

Or-

1O
0.1

3

030.5
Ic(mA~

5

30 50

10

100

COLLECTOR CURRENT

3

5

10
IdmA~

30 50

100

300 500 1000

COLLECTOR CURRENT

POWER DERATING
400
350

Z

i

300
2SO

1\

'\

CI

15
3J
2

l.

200

I\.

\

ISO
100

'\
\.

SO

o

25

50
T,(.~

c8

75

100

\

125

150

175

200

AMBIENT TEMPERATURE

SAMSUNG SEMICONDUCTOR

352

KSR1211

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias

Resistor Built In) .
TO·92S

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R=22KO)
• Complement to KSR2211

ABSOLUTE MAXIMUM RATINGS (Ta=2~OC)
Characteristic

Symbol

Collector-Base Voltage
Colle9tor-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEao
Ic
Pc
Tj
Tstg

Rating

Unit

40
40
5
100
300
150
-55-150

V
V
V
mA
mW
°C
°C

I

1. Emiiter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Symbol

Characteristic
Collector-Base Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance
Current Gain-Bandwidltl Product
Input Resistor

BVceo
BVeEo
lceo

hFE
Vce(~t)

Cob

fr

T8st Condition
le= 1OO,.A, IE=O
IE=1mA,la=0
Vca=30V. IE=O
VCE=5V,lc=1mA
Ic=10mA.la=1mA
Vca=10V.IE=0
f=1MHz
VCE=10V. le=5mA

R

Min

Typ

Max

40
40
0.1
So'O
0.3

100
3.7

15

250
22

Unit
V
V
jAA
V
pF
MHz

29

KO

Equivalent Circuit
Collector (Output)

R
Base (Input)O

y+...

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

353

KSR·1212

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bi~sResis.tor Built 10)·
TO-928

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R=47KD)
• Complement to K8R2212
'.

ABSOLUTE MAXIMUM RATINGS (T/=25°C)
Symbol

Ch/lracteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-B,ase Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
T5tg

Rating

Unit

40
40
5
100
300
150
-55-150

V
'V
V
mA
mW
°C
°C

1. Emiiter 2. Collecior 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 0 C)
Characteristic

Symbol

COllector-Base Breakdown Voltage
Emitter-Emitter Breakdown Voltage.
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output CapaCitance '.

BVcso
BVceo
ICBO
hFE
Vce(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

fT.
R

Test 'Conditlon
Ic~100,..A, IE=O
le=lmA,IB=O
VcB=30V, 'E=O
VcE=5V, Ic=lniA .
Ic=10mA,IB=lmA
VcB =10V, IE=(I
f=lMHz
Vce=10V,lc=5mA

Min
40
40

Typ

Max

V
V

r

0.1
600
0.3

100
3.7

32

Unit

250
47

62

,..A
V
pF
MHz
KD

Equivalent Circuit
Collector (Output)

R

ease

(Input)O---~"r----l

EmItter (Gnd)

c8 SAM~UNG

SEMICONDUCTOR

354

KSR1213

NPN EPITAXIAL SILICON TRANSISTOR

.

SWITCHING APPLICATION

(Bias .Resistor Built In)
TO·92S

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R, = 2.2KIl, R,=47K!l)
• Complement to KSR2213

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic

Symbol

Collector· Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Ve80
VeEO
VE80
Ie
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150

V
V
V
mA
mW
°C
°C

I

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
CoUector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVCEo
BVeEo
ICBO
hFE
VeE(sat)

50
50

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R 2

Ic= 1OjAA, IE=O
Ic= 1OOjAA, 18=0
VcB =40V, le=O
Vce=5V, Ic=5mA
le=10mA,IB=0.5mA
Vce=5mA,le=10V
VcB =10V,le=0
f=1.0MHz
VcE =5V, le= 1 OOjAA
VcE =0.2V, le=5mA

fr

Typ

Max

Unit

0.1

V
V
JAA

68
0.3
250
3.7
0.5
1.5
·0.042

2.2

0.047

1.1
2.9
0.052

V
MHz
pF
V
V
KG

Equivalent Circuit
CollectOr (Output)

A,
Base (Input)

----"....vV""---r--i
A,

L..----t

c8

Emitter (Gnd)

SAMSUNG SEMICONDUCTOR

355

KSR1214

NPNEPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Res.istor Bui.lt In)
TC>-92S

• Switching circuit. Inverter. Interface circuit Driver circuit
• Built in bias Resistor/R, = 4.7KO, R,=47KO)
• Complement to KSR2214

ABSOLUTE MAXIMUM RATINGS (Ta =:=25°C)
Characteristic

Symbol.

Collector-Base Voltage
Collector-Emitter Voltage.
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEao
Ic
Pc
Tj
Tstg

Rating

Unit

50
50
10
100
300
150
-55-150
,

V
V
V
mA
fT)W

°C
°C
1. Emitter 2. Coll~ctor 3. ease .

ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Characterist.ic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Satl!ration Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVCEO
BVceo
ICBO
hFe
Vce(sat)

Ic=1Q"A, I~=O
Ic=100/lA,la=0
Vca=40V, le=O
Vce=5V, Ic=5mA
Ic= 1OmA, la=0.5mA
Vce=5mA,lc=10V
Vce=10V,le=0
f=1.0MHz
Vce =5V,lc=100"A
Vce=O 2V, Ic=5mA

50
50·

Input Off Voltage
II1Put On Voltage
Input Resistor
Resistor Ratio

h
Cob
Vi(off)
Vi(on)
.R,
R,/R 2

Typ

Max

V

V
0.1

"A

0.3

V
MHz
pF

68
250
3.7
0.5
3.2
0.09

Unit

4.7
0.1

1.3
6.2
0.11

V
V
KO

-

Equivalent Circuit

R,
Base (Input)

---""",v---.--I
R,

'-----I Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

356

KSR2001

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor (R.=4.7KO, R,=4.7KO)
• Complement to KSR1001

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic

Symbol

Collector·Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vclio
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

-50
-50
-10
-100
300
150
-55-15.0

V
V
V
mA
mW
·C
·C

•

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)
.
,

Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVCBO
BVcEo
ICBO
hFE
VCE(sat)

Ic=-101lA, IE=O
Ic=; -1 001lA, IB=O
VcB=-40V,IE=0
VcE =-5V,lc=-10mA
·lc =-10mA,IB=-0.5mA
VcE =-5mA,lc =-10V
VCB = -, 1OV, IE=O
f=1.0MHz
VcE =-5V,lc=-100,.,.A
VcE =-0.3V,lc =-20mA

-50
-50

fr
Cob
Vi(off)
Vi(on)
R,
R,/R2

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Typ

Max

Unit

-0.1

V
V
,.,.A

20
-0.3
200
5.5
-0.5
. 3.2
0 .. 9

4.7
1

-3
6.2
1.1

V
MHz
pF
V
V.

KO

Equivalent Circuit
Collector (Oulput)

R,
ease (Inpot) - - - " " " , V ' - - - . - - I

R,

'"-----I Emiller (Gnd)

c8

SAMSUNG

SEMICOND~croR

357

PNP EPITAXIAL SILICON TRANSiSTOR

KSR2001

DC CURRENT GAIN
INPUT ON VOLTA.GE
.1000

-100

VeE ;"5V.
R,;, 4.7K
4.7K

ft.-

-50

000

-3C
Z

III

..."~
!5

-10

~

-.

I

-5

-3

~

C-

J!

300

V

100

V

lo.!

1

-1

:>

50

If

30

-0.5

/

-0.3

10

3

1

5

10

50

~oo

1 00

500 1000

lc(mA), COLLECTOR CURRENT

lc(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING

1000

Vce- 5V
R,-4.7K

350·,

Rl~4.7K

i\

\

I
'"

~

'

0

...

0

0

0."

0.8

V~OFF)

c8

1.8

2.0

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR.

200

\.

'\

15 0

100

1,\
\.

0

i
25

50
T,(·C~

75

100

\

125

150

175

200

AMBIENT TEMPERATURE

358

KSR2002

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built In bias Resistor(R,=10KO, R,=1OKO)
• Complement to KSR1002

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C).
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature'
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

-50
-50
-10
-100
300
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emitter 2

•

Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC CLirrent Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVcBO
BVcEo
IcBO
hFE
VCE(sat)

-50
-50

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R 2

Ic=-10",A,IE=0
Ic=-100jolA,la=0
Vca=-40V,IE=0
VCE=-5V, Ic=-5mA
Ic =-10mA,la=-0.5mA
VCE=-5mA,lc=-10V
Vca =-10V, 1.=0
f=1.0MHz
Vc.=-5V,lc=-100jolA
VcE =-0.3V,lc=-10mA

,

fr

Typ

Max

Unit

-0.1

V
V
joIA

30
-0.3
200
5.5
-0.5

7
0.9

10
1

-3
13
1.1

V
MHz
pF
V
V

KO

Equivalent Circuit
Collector (Output)

R,
Base (Input) ---~.......--,--I

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

359

KS,R2002

PNP .EPITAXIAl: SILICON TRANSISTOR
DC. CURRENT GAIN
INPUT ON VOLTAGE
1000

-100

-50

VCE=

~~:~~~

-3C

'"

~
g

....
::>

veE -5V
A.= 10K
A.- 10K

~t
500
300
Z

:c

-10

"....

-5

!

-3

I

-1

lL~

Z

W

II:
II:

g

'"

100

u

;>

-0.5

U
Q

50

1

3(1

-03

-0 1

0.3

-1

3 -5

10

/

"

10

-30 -50 -100

10

lc(mA). COLLECTOR CURRENT

30 50

300500 1000

100

lc(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING
40a

VCE=5V

....
Z

II:

500

'"

300

W
II:

U
II:

R1 =10K

'.

1000

c
:..
;::
I

~

I

\

I

a:

U

........w

100

0

I-- -

~
..~

t---

U

C

~

35a

R)-=10K

50
30

30
250

;'\
\
\.

200

\

15a
100

\.

50

i

10

o

0.4

0.8

1.2

1.8

2.0

V,(OFF) (V) INPUT OFF VOLTAGE

c8

SAMSUNG SEMICONDUCTOR'

o

,

1\

25

50

75

100

\

125

150

175

200

T,(°C), AMBIENT TEMPERATURE

360

KSR2003

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
TO-92

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resjstor(R;=22KO, R,=22KO)
• Complement to KSR1003

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
'Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBo
VCEO
VEeo
Ic
Pc
Tj
Tstg

Rating

U(lit

-50
-50
-10
-100
300
150
-55-150

V
V
V
mA
mW
°C
°C
1. Emitter 2. Collector 3, Base

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter BreakdC?wn Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVceo
BVCEO
lceo
hFE
VCE(sat)

Ic= -1 OJ.lA, IE=O
Ic=- lOOIlA,le=.O
Vce =-40V,IE=0
VcE =-5V, Ic=-5mA
Ic =-10mA,le=-0.5mA
VcE =-5mA,lc=-10V
Vce =-10V,IE=0
f=1.0MHz
Vce =-5V,lc=-100j.lA
VcE =-0.2V, Ic=-5mA

-50
-50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

fr
Cob
Vi(off)
Vi(on)
R,

Max

Unit

-0.1

V
V
j.lA

56
-0.3

V
MHz
pF

200
5.5
-0.5
15
0.9

R,/R 2

Typ

.'

22
1

-3.0
29
1.1

V
V

KO

Equivalent Circuit
Collector (Output)

R,
Base (Input) - - - - " v v V ' - - - . - - i

R,

Emitter (Gnd)

cR

SAMSUNG SEMICONDUCTOR

361

,: PNP EPITA~IAL SILICON TRANSISt()R

KSR20()3
INPUT ON VOLTAGE'

DC CURRENT GAIN
1000

100

Vce- O 2V
R,-22 K
R1 ""22K

50

500

30

300

w

Z

:c

CI

~

iz

veE =5V
R,= 22K
R.- 22K

~~

...
CI

Z

W

10

II:
II:

100

::>
U
U

5

Q

~,

~

I

I
~

I

,
0'

~

J:

50
30

1/

10-'10'0

03 05

3

5

10

30 50 100

1

3

lc(mA) COLLECTOR CURRENT

5

30 50

10

100

300 500 1000

lc(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING
400

I

1000

...

Vce- SV
A,""22K
R!-22K

500

Z

II:
W

II:

300

::>

I

U

II:

100

....

}

250

is
a:

200

'"0~
...
~....
...

0

U

50
30

30C

~
!C...

ij

I

...0

!il....

350

\\

~

\

'150

100

1\

50

10

o

04

08

1 2

16

20

o

,
\

i
25

50

75

100

125

150

175

200

T.l°,C}. AM!IJENT TEMPERATURE
V~OFF)

,'cR

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

362

PNP EPITAXIAL SILICON TRANSISTOR

KSR2004

SWITCHING APPLICATION (Bias Resistor Built

In)
TO·92

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R ,=47KD, R,=47KD)
• Complement to KSR1004

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

Unit
V

V
V
mA
mW
°C
°C
1. Emitter 2. Collector 3. Ba..

ELECTRICAL CHARACTERISTICS (Ta = 25 ~ C)
Characteristic

Test· Condition

SYJ:llboi

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage.
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVCBO
BVcEo
ICBO

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R2

h~E

Vcdsat)

fr

Ic=-10"A, 'IE=O
'lc=-100"A,IB=0
VcB=-40V, IE=O
VcE =-5V,lc=-5mA
Ic=-10mA,IB=-0.5mA
VCE=-5mA,lc=-10V
VcB =-10V,IE=0
f=1.0MHz
VcE =-5V,lc=-100"A
VcE =-0.3V,lc=-10mA

Min

Typ

Max

-50
-50

Unit
V
V

-0.1

"A

-0.3

V
MHz
pF

68
200
5.5
-0.5
32
0.9

47
1

-3
62
1.1

V
V
KQ

Equivalent Circuit
Collector (Output)

R,
Base (Input)

---"...vV---,-4
R,

.f

EmItter (G.nd)

c8

SAMSUNG SEMICONDUCTOR

363

PNP EPITAXIAL .SILICONTRANSISTOR

KSR2004"

DC CURRENT GAIN
INPUT ON VOLTAGE
1000

-100
-50

R1 c 47K
R2-=47K

-3C

...I'!

500
300

w

...~

l

-10 1--.

Z

<
CJ

~

...Z

-5

-3

W

II:
II:

....

~

:I

VeE ';~V
R,- 47K
R,= 47K

Vee=<- O.3V

<,,'

100

~

U
U

-1

50

Q

:>

~

.c

-0.6

30

-0.3

-0.1

.....

1--3 -5

0.3
lc(mA~

-10

10~-L~~~~

-30 -50 -100

1

3

5

__~~~~~-L~~~W

10

BO 50

100

3005001000

COLLECTOR CURRENT

lc!mAI COLLECTOR CURRENT

INPUT OFF'VOL TAGE
POWER DERATING
400

350
~

i

3DC
25

0

a:

200

~..

150

~

1\,

,

I\.

'\

1\

100

~

0

'OLO~--0~.4~--0~.8~~'~2~--'~6~--2~O~--~
25

VdOFFI (VI INPUT OFF VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

50
T.(·~

75

100

\

125

150

175

200

AMBIENT TEMPERATURE

364

KSR2005

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built 'In)
TO-92

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built In bias Resistor (R,=4.7KIl, R,=10KIl)
• Complement to KSR1005

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcoo
VCEO
VEOO
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

V
V
V
mA
mW
°C
°C

I

i

1. Emitter 2. Collector 3. Base

=

ELECTRICAL CHARACTERISTICS (Ta 25 ° C)
Characteristic

Symbol

. Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
. Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product

BVcBo
BVceo
Icoo
hFe
Vce(sat)
Cob

Ic=-10IlA, le=O
Ic=-100IlA,IB=0
Vca =-40V, le=O
Vce=-5V,lc=-5mA
Ic=-10mA,IB=-0.5mA
Vca =-10V,le=0
f=1MHz
• Vce =-10V, Ic =-5mA
VCE=-5V,lc=-100IlA
Vce =-0.3V, Ic=-20mA

-50
-50

Current Gain·Bandwidth Product
Input Off Voltage
Input On Voltage
Input Aesistor
Aesistor Aatio

Equivalent Circuit

fr
Vi(off)
Vi(on)
At
At/A 2

Typ

Max

Unit
V
V

-0.1

,.A

-0.3

V
pF

30
5.5
200
-0.3
3.2
0.42

4.7
0.47

-2.5'
6.2
0.52

MHz
V
V

KO

Collector (Output)

R,
Base (lnputlG--~~N+r--r--l

R,

EmItter (Gnd)

=8

SAMSUNG SEMICONDUCTOR

365

KSR2005

PNP EPITAXIAL SILICON TRANSISTOR
INPUT ON VOLTAGE

. DC CURRENT GAIN

-100
Vce--Q,3V

-SO

-'000._~
-~
~-~
VCE=-5V

-3C

l!I
~

-10

...

-5

~

i

Rz=10K

-300

-

-3

~

I

-1

,;;
-0.5
-0.3

-0.1

-1

0.3

Ic:(mA~

-3 -5

30 -SO -100

-10

COLLECTOR CURRENT

Ic:(mA~

INPUT OFF VOLrAGE
-10000
•

R,-4.7K'=

~

1==
G

J

,~-100

j

-10

a
"
~.

300
2SO

\

is

~
l

-6
-3

'200

I

\

\.

\

150
100

1\
1\

50

I

1
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1

V40fF)(V), INPUT OFF VOLTAGE

c8

3SO

R2- 1OK

-1000

::

400

-=

Vce--6V

-5000
-3000

~

COLLECTOR CURRENT

POWER DERATING

SAMSUNG SEMICONDUCTOR

25

50
T,(·~

75

100

\

125

150

175

200

AMBIENT TEMPERATURE

366

PN~ EPITAXIAL SILICON TRANSISTOR

KSR2006
SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,=10KO, R2 =47KO)
• Complement to KSR1006

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Volta\je
Emitter-Base Voltage
Collector Current
Collector Dissipation
· Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcoo
VCEo.
VEoo
Ie
Pc
Tj
T:;tg

-50
-50
-10
-100
300
150
-55-150

V
V
V
mA
mW
°C
°C

I

1. Emitter 2. Colleclor 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Gurrent Gain
. Collector-Emitter Saturation Voltage
Output Capacitance

BVceo
BVcEo
Icoo
hFE
Vcdsat)
Cob

Ic=:-lOj.lA,IE=O
Ic=-100j.lA,le=0
Vce= -40V, IE=O
VcE =-5V, Ic=-5mA
le=-10mA,le=-0.5mA
Vce =-10V,IE=0
f=lMHz
VcE =-10V,le=-5mA
VCE=-5V,lc=-100j.lA
VcE =-0.3V,lc =-lmA

-50
-50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
ReSistor Ratio
Equivalent Circuit

h.
Vi(off)
Vi(on)
R,
R,/R2

Typ

Max

Unit

-0.1

V
V
j.lA

68
. -0.3
5.5
200
-0.3

7·
0.19

10
0.21

-1.4
13
0.24·

V
pF
MHz
V
V

KO

Collector (Output)

R,
Base IInput_-~w.r----r--i

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

367

KSR2006

PNP EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

INPUT ON VOLTAGE
-1000

-100

...~
:::0

~

-50

Vce- 03V
R, 10K

-30

R =47K

" -100

1-

-5
-3

V

~

,.I

-300

~

-10

-

60
-30

i

-10

Ii

-1

Voe- 5V
R, 10K
R, 47K

-500

-05

-5

-0.3

-3

1==.

LI'

1

-01

-3

0.3
Ic(mA~

5

-10

- 0.1

-30 -50 -100

0.3

3

OOLlECTOR CURRENT

Ic(m~

INPUT OFF VOLTAGE

-1000

I

~~~O~~

100

175

200

350

R2-47K_

II

Z

300

1

II!

~

~

\

260

~-100
'" -50
-30

~

iii

200

~

150

'"

100

!

8

-~O

I\.

\
1\,

5

-3

~

0

1
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -13 -1 5 -1.7 -1.9 -2.1

V.OFfllV), INPUT OFF VOLTAGE

c8

50

400

!i-500
-300

}

30

POWER DERATING

-10000
-5000
-3000

- 5 - 10

COLlECTOR CURRENT

SAMSUNG SEMICONDUCTOR

25

50
T.(·C~

75

100

\

125

150

AMBIENT TEMPERATURE

368

PNP EPITAXIAL SILICON TRANSISTOR

KSR2007
SWITCHING ·APPLICATION

(Bias Resistor Built In)
TO-92

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,=22KIl R,=47KIl)
• Complement to KSR1007

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcoo
VCEO
VEOO
Ie
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

V
V
V
rnA
mW
DC
DC

1. Emiller 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Characteristic

Symbol

Teat Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product

BVcoo
BVcEO
Icoo
hFE
VCE(sat)
Cob

-50
-50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
ReSistor Ratio

h

Ic=-10fAA,IE=0
Ic =-100jlA,ls=0
Vca =-40V,IE=0
VcE =-5V, Ic=-5mA
Ic =-10mA,ls=-0.5mA
Vca =-10V, IE=O
f=1MHz
VCE=-10V, 1c=-5mA
VCE=-5V, Ic=-100fAA
VCE=-0.3V,lc=-2mA

Equivalent Circuit

Vi(off)
Vi(on)
R1
R1/R2

Typ

Max

Unit

-0.1

V
V
fAA

68
-0.3
5.5
200
-0.4
15
0.42

22
0.47

-2.5
29
0.52

V
pF
MHz
V
V
KIl

Collector (Output)

R,
Base (Input_--4\M,---.----I

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

369

KSR2007PNP EPITAXIAL SILICON TRANSISTOR
INPUT ON VOLTAGE

DC CURRENT GAIN

-100

i
t:

i

-30

R1- 22K
R2 47K

-500

RI=22K
A, 47K

-300

~
-10

.. -,00 _ _ _

-5

!i
II:

~50

-3

ff

-30

g

I

_1000_~
VCE""'-5V

Vce= 03V

-50

~

1

,01/• • • •

i

:>
-05

1_-5

-0.3

-3

,-01

-

- 03

-3

I

5

- 10

30

- 50

100

idmA), COLLECTOR,CURRENT

idmA~

INPUT OFF VOLTAGE,

POWER DERATING
400

-10000

-5000
-3000

Vce- 5V=

I

)

-1000

35a

R,-22KA2=47K_

1\

!i-sao

1-300
i!
1!i-1 00
() -50

~

-30

j

-10
-5
-3
-1

-0.1

iii

200

~

150

!..

\.

\

100

,
I
0.3 -05 -0.7

\,
\.

09

V~OFf)(V),

c8

,

'\

I

.

8

COLLECTOR CURRENT

1.1 -1.3 -1.5 -1.7 -1.9 -2.1

INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

26

50
T.(·C~

75

100

\

125

150

175

200

AMBIENT TEMPERATURE

370

KSR2008

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
T0-92

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor (R.=47KIl, R, =22KIl)
.' Complement to KSR1008

ABSOLUTE MAXIMUM RATINGS 

i

-10

I

--

IB

-5
-3

~

,.I

150
30

-0.5

/

-0.3

-0.1

-0.3

-3
1~mA),

5

10

30

10

50 -100

3

COLLECTOR CURRENT

5

10

,

1000

RJ ·,0K

I

~

100

...

50

}

30

~

240

~

180

t
1

120

...

200

"

\.

0

80

r'\.
'\

40
10

o

i
0-4

0.8
V~OFf) (V)

c8

1.2

1.8

1000

230

I

I

!

300 500

POWER DERATING

500
300

100

320

VC£""SV
A.-10K

i5
~

50

3Q

Ie (IlIA), COLLECTOR CUIlRENT

INPUT OFF VOLTAGE

~

'"

Ii

~I--

-1

,/

100

2.0

INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

~

"'"

76

'\

100

125

150

175

200

T,(°C), AMBIENT TEMPERATUIIE

384

KSR2103

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
.SOT-23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=22KIl, R,=22KIl')
• Complement to KSR1103

ABSOLUTE MAXIMUM RATINGS· (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

-50
-50
":'10
-100
200
150
-55-150

V
V
V
mA
mW
°C
°C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Typ

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance

BVcso
BVcEo
ICBO
hFE
VCE(sat)

-50
-50

.,

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R2

Ic=-10~. IE=O
Ic=-100,..A.le=0
Vce =-:40V. IE=O
VcE =-5V. Ic=-5IT1A
Ic=-10mA,le=-0.5mA
VcE =-5mA,lc=-10V
Vce =-10V.IE=0
f=1.0MHz
VCE=-5V.lc=-100,..A
VCE=-0.2V.lc=-5mA

Equivalent Circuit

fr

Collector (Output)

Max

Unit
V
V

-:-0.1

~

-0.3

V
MHz
pF

56
200
5.5
-0.5
15
0.9

22
1

-3.0
29
1.1

V
V

KO

Marking

R,
Base (lnput)_-~"""--r--t

fl,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

385

KSR2103:

PNp· EPITAXIAL SILICON TRANSISTOR
INPUT ON VOLTAGE

DC CURRENT GAIN

100

1000

v.. - 0.2V

Vee 5V'
Rl=22K

RJ=22K
Rz 22K

~J-22K

500

50

300

30

..

~

--

~

!:i
~

IG

5

10

Z

•

V""
100

8

'"~

~

i

/

50

f

30

I----'~
10

1
0.1

3

03 0.5

5

30

10

3

50 100

5

10

INPUT OFF VOLTAGE

1000

I-

I

~

"
~

~

100

i

,.

I

0

I-

I
,

50

~

30

240
200
160

~

i\.

120

,

"

80

'\

40
10

1,..1
o

04

08
V~OFF.)

'c8

12

16

1000

230

e

."

300 500

POWER DERATING

500

...Z
§ 300

100

320

VcE -5V
R.-22K
Rz=22K

"",

30 50

Ie (mA). COLLECTOR CURRENT

lelmA), cOLLECTOR CURRENT

20

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

25

50

75

'\

100' 125

150

T.t°e). AMBIENT TEMPERATURE

175

200

KSR2104

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
SOT-23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=47KO, R,=47KO)
• Complement to KSR1104

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
200
150
-55-150

V
V
V
mA
mW
°C
°C

•

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test' Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVcBO
BVcEo
IcBO
hFE
VCE(sat)

Ic=-1O,..A. IE=O
Ic=-100,..A.le=0
Vce =-40Y.IE=0
VcE =-5V.lc =-5mA
Ic=-10mA.le==-0.5mA
VCE=-5mA.lc=-10V
Vce =-10V.IE=0
f=1.0MHz
VcE =-5V.lc =-100,..A
VcE =-0.3V.lc=-10mA

-50
-50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

fr
Cob
Vi(off)
Vi(on)

R,
R,/R 2

Equivalent Circuit

Collector (Output)

•

Typ,

Max

Unit

-0.1

V
V
,..A

68
-0.3
200
5.5
-0.5
32
0.9

47
1

-3
62
1.1

V
MHz
pF
V
V

KIl

Marking

R,
Base /lnput)_--"'WYtr-.------t

R,

, EmItter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

,387

KSB21 04

. PNPEPITAXIAL .SILICON TRANSISTOR
. DC CURRENT GAIN

·INPUT ON VOLTAGE
1000

-100

VeE 5V

Vee"'. 0 3V

A. 47K
Ra-47K

R1-47K
A =47K

. -SO

500

-3C

300

~
!:; -10
~

...

-5

ia;

,

~
!5

.....

I·
~ 100

-3

~

8

~

a

i

-1

'$

50

30

-0.5
-0.3

-0.1

-0.3

-1
IclmA~

-3 -5

-10

10

30 -50 -100

3

COUECTOR CURR~

10

5

INPUT OFF VOLTAGE

Z

240

I~ I\.
I

I

100

160

•

~

50

120

~
'I\.

80

\

30

0
10

o

0.8
V~OFF)(V)

c8

1000

230

!Z.5oo
w
I 300
i3

}

300 500

POWER DERATING

1000

~-'-

100

320

VCE=5V
R.=47K
R2=47K

e&l

3050

Ie (mAl, COUECIOR CUIlRENT

1.2

16

o

20

INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

•

25

SO

75

'\

100

125

150

175

200

T,{°C), AMBIENT TEMPERATURE

388

KSR2105

PNP EPITAXIAL SILICON TRANSISfOR

SWITCHING APPLICATION

(Bias Resistor Built In)
80T·23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,=4.7KO, Rz =10KO)
• Complement to KSR1105

ABSOLUTE MAXIMUM RATINGS
(Ta =25°C)
.
.
Characteristic

Symbol

Collector· Base Voltage
Coliector·Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

-50
-50
-10
-100
200
150
-55-150

V
V
V
mA
mW
DC
DC

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector· Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product

BVcBO
BVcEo
IcBO
hFE
Vee(sat)
Cob

-50
-50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

fr

Ic=- 1OIlA,IE=0
Ic=-100IlA,le=0
Vce =-40V, (E=O
VCE=-5V, le=-5mA
Ic =-10mA,le=-0.5mA
Vcs =-10V,IE=0
f=1MHz
VcE =-10V,lc =-5mA
VCE=-5V,lc=-100IlA
VcE =-0.3V, le=-20mA

Vi(off)
I'Vi(on)
R,
R,/R 2

Ty.p

Max

Unit

-0.1

V
V
fAA

30
-0.3
5.5
200
-0.3
3.2
0.42

4.7
0.47

-2.5
6.2
0.52

V
pF
MHz
V
V
KO

Marking

Equivalent Circuit
Collector (Output)

A, .
Base

(lnput)~-~~--r--I

A,

EmItter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

389 .

PNP EPITAXIAL SILICON TRANSISTOR
DC

INPUT ON VOLTAGE

-3C

I..
"
~
~

R,

-500
-300

Z

..illj

-10

-5

-100

i

-50

U

-30

"
u
"i

'"

-1

:>

5V
4.71(

R2-toK

-3

s-a-

.,-

VCE-

VqE- 03V
Al-4 .7K
R2-10K

-50

'"

CURRENTGAIN~

-1000

-100

'"

'--

V

-10

-0.5

-5

-03

-3

./

-1
-01

-1

-0.3

lc(rnA~

-3 -5

10

-30

50

-0.1

100

-03

-3
Ic(mA~

COUECTOR CURRENT

INPUT OFF VOLTAGE

-5000
-3000

~~;'~~7~V-=

II

R

I

I

!!i-l00

j

-50

~

240

I
!.

200

•

-30

160

~
~

120

l

-10

1
-0.1 -0.3

80
40

I
0.5

0.1

0.9

1.1

1.3 -1.5 -1.7 -1.9

V(OFF)(V), INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

2.1

-

K.
'\

E

-5
-3

c8

280

-10~_

!:i

I=:~
3

100

POWER DERATING

-1000

8

-30 -50

320

-10000

~

-10

5

COLLECTOR CURRENT

25

50

75

.

'\

100

125

150

175

200

T.,(·C~ AMBIENT TEMPERATURE -

390

KSR2106

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
SOT-23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=10KO, R,c47KO)
• Complement til KSR1106

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
CoUector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCeD
VCEO
VEI)O
Ic
Pc
Tj
Tstg

Rating
-50
-50
-10
-100
200
150
-55-150

Unit
V

.v
V
mA
mW
°C
°C

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)'
Characteristic

Symbol

Test Condition

Collector-Base Breakdown Voltage
Col/ector-Emitter Breakdown Voltage
Col/ector Cutoff Current
DC Current Gain .
Collector-Emitter Saturation Voltage
Output ·Capacitance

BVceD
BVcEo
ICeD
hFE
Vcdsat)
Cob

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

h

Ic =- 1OIAA,IE=0
Ic=-1OOIAA, 1a=0
Vce =-40V, IE=O
VCE=-5V,lc=-5mA
'c;=-10mA,le=-0.5mA
Vce =-10V,IE=0
f=1MHz
VcE =-10V,lc=-5mA
VcE =-5V,lc =-100/AA
VCE=-0.3V,lc=-1mA

Equivalent Circuit

Vi(off)
Vi(on)
R,
R,/R 2

Collector (OutPtJt)

M·ln

Typ

Max

Unit

":'0:1

V
V
/AA

-50·
-50
'68
-0.3
5.5
.200
-0.3

7
0.19

.10
0.21

-1.4
13
0.24

V
pF
MHz
V
V

KO

Marking

A,
Base (inputlO------"IN+r--.--t

A,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

391

PNP EPITAXIAL SILICON TRANSISTOR

KSR2106

,

INPUT ON VOLTAGE

DC CURRENT GAIN

-1000

-100

Vce--5V
A,-10K
A, 47K

Vcs--O.3V
R1=1OK

-50

R~

-500

47K

-3C

~

-10

t:

-5

-300

~

r---.

CJ -100

g

i

-3

1/

1

I8

-50

:I

-10

-30

-0.5

-5

-0.3

-3

...... 1..-'

-1

-0.1

-0.3

3 -5

-10

-30 -50 -100

-0.1

-0.3

INPUT OFF VOLTAGE

II

-1000

j

100

POWER DERATING

=;

~~~~

280

z

240

...

200

Ii!C

;-500

~

-30 -50

VCE=-5~

-5000

-3000

~-100

-10

320

-10000

f300

-3 -5

-1

Ic(rnA~ COLLECTOR CURRENT

1c(mA), COLLECTOR CURRENT

illis

I

a:
w 160

,~

:::

•

I\.

l

-10

-5
, -3

.'

\.

120

E

"\.

80
40

-1

-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1
V'OFf)(V), INPUT OFF VOLTAGE

25

50

75

'\

100

125

150

175

200

T.(·~ AMBIENT. TEMPERATURE

•

c8 SAMSUN~

SEMICONDUCTOR

392

PNP 'EPITAXIAL SILICON TRANSISfOR

KSR2107
SWITCHING APPLICATION

(Bias Resistor Built In)
80T-23

• SWitching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=22KO, R,=47KO)
• Complement to KSR1107

ABSOLUTE MAXIMUM' RATINGS (Ta =2S0C)
Symbol

Chara.cteristic
Collector-Base Voltage
Collec;tor-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

-50
-50
-10
-100
200
150
-55-150

V
V
V
mA
mW
·C
·C

I

1. Base 2. Emitter 3. Collector

ELECTRICAL' CHARACTERISTICS (Ta =2S0C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product

BVcBO
BVceo
leBO
hFE
Vee/sat)
Cob

-50
-50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

h

Ic= -1 O,..A, le=O
Ic= -1 OO,..A, la=O
Vca =-40V, IE=O
VcE =-5V, Ic=-5mA
le=-10mA,la=-0.5mA
Vca =-10V,I E=0
f=1MHz
VcE=-10V,lc'-;'-5mA
VcE =-5V,lc =-100,..A
VcE =-0.3V,lc =-2mA

Vi(off)
Vi(on)
R,
R,/R2

Typ

Max

Unit

-0.1

V
V
,..A

68
-0.3
5.5
200
-0.4
15
0.42

22
0.47

-2.5
29
.0.52

V
pF
MHz
V
V
KO

Marking

Equivalent Circuit

Collector (Output)

R,
Base (InputlG--~Mr--.-~

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

393

,

. KSR2107

P·NP EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAiN

. INPUT ON VOLTAGE
-100

-1000 _
-500

VCE--O.3V

-SO
-3C

_
Vce·-5V
R,"'22K
R2-47K.

-300

z

111

i:!!

-10

i

-6

~

I~_100._.

=-

~

-3

~

·1

-60

-30

-1

".$

-O_S
-0_3

-1__a,0:-:.l....1.._-':O:-l;_3,.w'-'J.L_l:--......._'=3utS.......l!:::0_~L.._t3O:'-"':S~0""'t._l00

-0_ 1 L-....I..'f
0 .:3:'-'.u.J."-';--..l.-_""3.1..L:'S'-'J.L_~10,.-J....oI
3O"uS:I:I
OI.l.l,l10·0
Ic:(mA~

. 1c:(mA), COLLECTOR CURRENT·

COLLECTOR CURRENT

INPUT OFF VOLTAGE

POWER DERATING
320

-10000
-5000

VCE- 5V

R,=22K

-3000

/

-1000

1-

r

500
300

1

1

-100

-50
-30

j

-10
-6
-3

1

280

R,-47K

z

240

i

200

~

I
I

160
120

'"

i\.

60

-- I\.

'\

40

I

-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1

25

50
T,(O~

c8SA~SUNG SEMICONDUCTOR

75

'\

100

125

150

175

200'

AMmENT TEMPERATURE

394

PNP EPITAXIAL SILICON TRANSISTOR

KSR2108

SWITCHING APPLICATION (Bias Resistor Built In)
80T-23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built In bias Resistor (R.=47KO, R,=22KO)
• Complement to KSR1108

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcoo
VeEo
VEOO
Ie
Pe
Tj
Tstg

-50
-50
-10
-100
200
150
-55":150

V
V
V
mA
mW
·C
·C

I

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25°C)
Characteristic

Test Condition

Min

le,=-10,..A,le=0
Ic=-100,..A,la=0
Vca =-40V,le=O
Vce=-5V,lc=-5mA
Ic=-10mA,la=-0.5mA
Vce=-5mA,lc=-10V
Vea=-10V,le=0
f=1.0MHz
Vee=-5V,lc=-100,..A
Vce =-0.3V,lc=-2mA

-50
-50

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
, Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance '
Input Off Voltage
Input On Voltage
Input Resistor
Reaistor Ratio

BVcoo
BVeeo

Icso
hFE
VCE(sat)

h
Cob
Vi(off)
Vi(on)
R,
R,/R 2

Equivalent Circuit

Collector (Output)

Typ

Max

Unit

-0.1

V
V
,..A

56
-0.3
200
5.5
-0.8
32
1.9

47
2.1

-4
62
2.4

V
MHz
pF
V
V

Kg

Marking

R,

Base (Input)O--~Mr--.----l

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

, 395',

PNP EPITAXIAL SILICON TRANSISTOR

:KSR2108·
INPUT ON VOLTAGE

1000

-100

~;'~7~

-50
-3C

VCE 5V
R,=47K
Al """22K

500

300

V

..~

,.

,s.

7

-1
30

-0.5
·-0.3

-01

-=<

~1

·3 -,

-10

-30 -! ) - IDC

0

3

lelmA}, COLLECTOR CURRENT

5

10

30 50

100

300 500

1000

Ie (mA), COLLECTOR CURRENT

POWER DERATING

INPUT OFF VOLTAGE
VcE -5V
R,=47K
R~=22K

1000

320

230
0

.. 500

ffi

~

300

I

V

1
i

0

'0

50

I

II

o

0.8
V~OFF}

c8

o

25

0

30

10

0

""

0

12

'1\

1.6

2.0

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

50

75

'\

\

100

125

150

175

200

T.,(°C), AMBIENT TEMPERATURE

396

KSR2109

PNP EPITAXIAL SIUCON TRANSISfOR

SWITCHING APPLICATION

(Bias Resistor Built In)

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built In bias Resistor (R=4.7KO,
• Complement to KSR1109

50T-23

ABSOLUTE MAXIMUM RATINGS (Ta =2,5°C)
Characteristic
Collector-Base Voltage'
Collector-Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol
Vcso

VCE~
VESO

Ie
Pc
Tj
Tstg

Rating

Unit

-40
-40
-5
-100
200
150
-55":150

V
V
V
mA
mW
·C
·C

•

1. Base 2. Emitter 3. Collector

ELECTRICAL· CHARACTERISTICS (Ta = 25° C)
Characteristic

Symbol

Col/ector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Col/ector-Emitter Saturation Voltage'
Output Capacitance

BVceo
BVcEO
lceo
!l"E
VCE(sat)
Cob

Current Gain-Bandwidth Product
Input ReSistor

fy

EqilivaJent Circuit

Test Condition
Ic=-100,..A,IE=0
Ic=-1mA,la=0
Vca =-30V,IE=0
Vce=-5V,lc=-1mA
Ic=-10mA,la=-1mA
Vca= -1 OV; IE=O
f=1MHz
VcE =-10V,lc =-5mA

R,

Min

Max

-40
-40

Unit
V
V

-0.1
SOO
-0.3

100

200
4.7

,..A
V

pF

5.5

3.2

Collector (Output)

Typ

MHz
S.2

KO

Marking

R

Base

IInput)B---~.,.,..---t

Emitter (Gnd)

c8

SAMSUNGSEMICONDUcrOP

397

PN·P EPITAXIAL SILICON TRANSISTOR

KSR2109
DC CURRENT GAIN

COLLECTOR-EMITTER SATURATION VOLTAGE

-'0000 _ _ _
-5000

VCE""-5V
R=47K

-1000 _ _ •
.. -500

Iclla=10/1
R=4.7K

i-3OO~-+-}++H+~__~~H+~__4-++++~

-3000

~-'Oool·1I1I1I1
6

i-,OO_"_

1-500
-300

g

-50
-30

-'Ol'0~'~_~0~3UW~_~'--~~3~_~5LU_~'O~~3~0~5~0~_~'oo
IclmA), COLLECTOR CURRENT

. ._

~-,oo.~

II:

-50

ia-30 1----++H+H-++-++H14+H---l-I-H+I+H

i-'Oll. ._
~ -5

-3

-1

-3 -5 -10
IclrnA~

-30 -50 -100

-300-500-1000

COLLECTOR CURRENT

POWER DERATING

0

32

280

0
0 '\
0
0
40

25

""

50

\.

75

"

100

125

150

175

200

T~·C). AMBIENT TEMPERATURE

c8

SAMSUNG

SEMICO~DUCTOR

398

KSR2110

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
80T-23

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built In bias Resistor (R=10KO)
• Complement to KSR1110

. ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tslg

Rating

Unit

-40
-40
-5
-100
200
150
-55-150

V
V
V
mA
mW
·C
·C

•

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Charactetlstlc
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output 'Capacitance
Current Gain-Bandwidth Product
Input Aesistor

Equivalent Circuit

Symbol
BVcBO
BVCEO

Icso
hFE
Vc~(sat)

Cob

fT

Test Condition
Ic=-100jAA. I~=O
IE=-1mA.la=0
Vca=-30V. IE==O
Vce=-5V.lc==-1mA
Ic""-10mA.la==-1mA
V~=-10V. IE=O
f=1MHz
VCE=-10V. ic==-5mA

Min

Collector (Output)

Max

-40
-40
-0.1
·600
0.3

100
5.5

7

A

Typ

200
10

Unit
V
V
jAA
V
pF
MHz·

13

KO

Marking

R
Base

(lnputJG--~Mr----t

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

399

PNP' EPITAXIAL SILICON TRANSlsrOR

KSR2110
DC CURRENT GAIN

COLLECTOR-EMITTER SATURAnON VOLTAGE

-'0000,~.II.RI
VeE"" 5V
A-10K

-5000

-3000

..-'°OO~.II.gi
Ic,le- 10'1
R=10K

-500

i

"-300

b--+~++~~--~-HH+~--+-++~~

'~-'00._'
!C

S-30
II:

~

-SO

__

~~~~~~~~-+++~

°ll_ _

I-'

~

-5

-3

-10~0~1~~Orl3~~-~1--~~3~5~_~'0~~3~0~_~5~0~_~'00
lc(mA), COLLECTOR CURRENT

-1

3

5 -10

30

50-100

300 500-1000

lc(mA), COLLECTOR CURRENT

POWER DERATING
320

280

Z

240

~

200

II:

160

~

I
;0
...

f
l

~.

i\.'\

120

80

I\.

'\

40

25

50

75

'\

100

126

-150

175

200

T~·C). AMBIENT TEMPERATURE

..

eSC SAMSUNG SEMICONDUCTOR

400

KSR2111

PNP EPITAXIAL SILICON· TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R=22KO)
• Complement to KSR1111

S01-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcep
VCEO
VEBO
Ic
Pc
Tj
Tstg

-40
-40
-5
-100
200
150
-55-150

V
V
V
mA
mW
°C
°C

•

1. Base 2 Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector-BaSe Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Satyration Voltage
Output CapaCitance

BVcao
BVcEO
ICBO
hFE
Vce(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

h
R

Test Condition
1c=-100"A.IE=0
IE=-1mA. le=O
Vce=-30V. IE=O
VCE=-5V. Ic=-1mA
Ic=-10mA.le=-1mA
Vce=-10V.IE=0
f=1MHz
VCE=-10V.lc=-5mA

Min

Typ

Max

-40
-40
-0.1
600
-0.3

100
5.5
200
15

22

Unit
V
V
"A
V
pF
MHz

29

KD

Marking·

Equivalent Circuit

Collector (Output)

R,
Base

(lnputlG--~"""----;

Emitter (Gnd)

ciS

SAMSUNG SEMICONDUCTOR

401

.PNP .a:PITAXIAL SILICON TRANSISTOR
',' •••"" S,.. "

. SWITCHING APPLICATION

(Bias Resistor Built In)

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R=47KO)
• Complement to KSR1112

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Colleqtor Current.
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

-40
-40
-5
-100
200
'. 150
-55-150

V
V
V
mA
mW
·C
·C

1. Base 2. Emiiter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =.25 °C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Galn .
· Collector Emitter Saturation Voltage
Output CapaCitance
Current Gain Bandwidth Product
Input Resistor

Symbol
BVcao
BVcEo
lcao
hFE
VCE(sat)
Cob

fr

Teat Condition
1c"-100~. IE""O
Ic--lmA.IB'"'O
Vce=-30Y. le=O
VcE =-5V.lc =-lmA
Ic"-10mA.IB--lmA
VcB .... -l0V.IE=0
f=lMHz
Vce=-10V.lc=-5mA.

R

Min

Typ

"'ax

-40
-40

V
'V
-0.1
600
-0.3

100
5.5

32

Unit

, 200
47

~
V
pF
MHz

62

KO

. Marking

Equivalent Circuit

Collector (Output)

R

Base (lnputiO--~"""---I

Emitter (Gnd)

C8~~MS~~'SEMICONDUcrOR

402

KSR2113, '

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R.=2.2KO, R2=47KO)
• Complement to KSR1113

50T·23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
, Ic
Pc
Tj
Tstg

Rating

Unit

-50
-50
-10
-100
300
150
-55-150

V
V
V
mA
mW
°C
°C
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta

=

25 0

C)

Characteristic

Symbol

Test Condition

Min.

Collector-Base Breakdown Voltage
.Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVcBO
BVcEo
ICBO
hFE
VcElsat)

-50
-50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Viloff)
Vilon)
R,

Ic= -1 O,.A, IE=O
Ic=-100,.A,IB=0
VcB =-40V, IE=O
VcE =-5V, Ic =-5mA
Ic= -1 OmA, IB= -0.5mA
VcE =-5mA,lc =-10V
VcB =-10V,IE=0
f=1.0MHz
VCE=-5V,lc=-100,.A
VCE=-0.2V,lc=-10mA

/

fr
Cob

R,/R 2

Equivale,nt Circuit

Typ

Max

Unit

-0.1

V
V
,.A

68
-0.3
200
5.5
-.0.5
1,5
0,042

2.2
0,047

-1.1
2.9
0.052

V
MHz
pF
V
V
KO

Marking
Coliector (Output)

R,
Base (Input)

R,

Emitter (Gnd)

c8

SAMSUNG. SEMICONDUCTOR

403

KSR21.14

PNP EPITAXIAL· SILICON TRANSISTOR

.SWITCHING APPLICATION

(Bias Resistor Built In) .
SOT-23

• Switching circuit, Inverter, Interface circuit Driver circuit
~ Built In bias Resistor(R.= 4.7KO, R,=47KO)
.
• Complement to KSR1114

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

VCBO .
VCEO
VEBO
Ic
Pc
Tj.
Tstg

-50
-50
-10
-100
300
150
-55-150

Unit
V
V

V
mA
mW
·C
·C
,. Base 2. Emitter 3. Collector

ELEC.TRICAL CHARACTERI$TICS (Ta =25°C)
Characteristic

Symbol

Test Condition

M.ln

C~llector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

BVCBO
BVCEo
ICBO
hFE
Vce(sat),

. -50
-50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Viloff)
Vilon)
R,
R,/R.

Ic=-10,..A.le=0.
Ic=-100,..A.le=0
Vce=":'40V. le=O
Vce=-5V.lc=-5mA
Ic=-10mA.le==-0.5mA
Vce=-5mA. Ici=-10V
Vce=-10V.le=0
f='1.0MHz
Vce=-5V.lc=-100,..A
Vce=-0.2Y. Ic=-5mA

fr
Cob

Equivalent Circuit

Typ

Max

Unit

-0.1

V
V
,..A

68
-0.3
200
5.1;i
-0.5
3.2
0.09

V
MHz
pF
V

4.7
0.1

-1.3
6.2
0.11 1

y.

KO

Merklng
Collee'or (OutRut)

R,
Base (Input)

----.,-"""""r_-r---l
R,

. Emitter (Gnd)

c8

SAMSUNG

SE~ICONDUCTOR

404

PNP EPITAXIA~ SILICON TRANSISTOR

KSR2201
SWITCHING APPLICATlON

(Bias Resistor Built In)
TO-92S

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R,=4.7KO, R,=4.7KO)
• Complement' to KSR1201

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Coliector·Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Curr,ent
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

V
V
V
mA
mW
·C
·C.

I

1 Emitter 2, Collector 3. Base

, ELECTRICAL CHARACTERISTICS (Ta =25°C)

•
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current IGain-Bandwidth Product
Output Capacitance

BVcEo
BVcEo
lcao
hFE
VCE(sat)

-50
-50

Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi (off)
Vi(on)
R,
R,/R 2

Ic =-10,..A,IE=0
Ic =-100,..A, Is=O
Vcs=-40V,IE=0
VcE =-5V,lc =-10mA
Ic=-10mA,ls=-0.5mA
VcE =-5mA,lc=-10V
Vcs""-10V,IE=0
f=1.0MHz
VCE=-5V,lc =-100,..A
VcE =-0.3V,lc=-20mA

fr

Typ

Max

Unit

-0.1

V
V
/J A

20
-0.3
200
5.5
-0.5
3.2
0.9

4.7
1

-3
6.2
1.1

V
MHz
pF
V
V,

KO

Equivalent Circuit
Collector (Output)

R,
Base (Input)

----"..vV--,--i
R,

'------I Emitter (Gnd)

c8

SAMSUNG SEMICONDUcroR

405

PNP .EPITAXIAL 'SILICON TRANSISTOR

, I l '

, "'

.

H

•

DC, CURRENT G~IN
INPUT ON VOLTAGE
.1000

VeE ~5V
R.~ 4.7K
A2~ ~.7K

500

i!

,

300

C

c:I

...

'"

Z

w

l/

~,

:>
(.)

100

~

g

1

50

1/

30

-03

-01

-3 -5

-10

30

/

10

50 -100

3

1

50

10

5

100

3006001000

lc4mA), o,COLLECTOR CURRENT
lc(mA) COLLECTOR CURRENT

'>. '.'.,.
INPUT OFF VOLTAGE

.

1000

POWER DERATING

•',w0

.1

VCE-SV
R, -4.7K
R,-4.7K

350
'" "

Ii

I

500
300

I

0

I

I

1\

\

0

1\

\

100

~

0
50

1\

30

r"\.

0
10

to,

0.4

0.8

1.2

1.6

2.0

25

c8

.

. ,$ '.

t

. . .,

. ,""

SAMSUNG SEMICONDUCTOR

75

100

\

125

150

175

200

T,(°C), AMBIENT TEMPERA1\IRE

V~OFF) IV) INPiIT OFF VOLTAGE

i.,

50

,

,j .],

,406 '

KSR2202

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
To.-92S

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built In bias Reslstor(R,=10KO, R,=10KO)
• Complement to KSR1202

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic

. Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCeI:J
Vceo
VeeI:J
Ic
Pc
Tj
Tstg

Rating

Unit

-50
-50
-10

V
V
V
mA
mW
°C
°C

~10Q

300.
150.
-55-150.

•

1. Emiiter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output CapaCitance
Input Off Voltage
Inpt,lt On Voltage
Input Resistor
Resistor Ratio

Symbol
BVceI:J
BVceo

ICeI:J

hFE
Vce(sat)

h
Cob
Vi(off)
Vi(on)
Rl

Test Condition

Min

Ic=-lQjAA,le=Q
Ic=-lQQjAA,la=Q
Vca=-4QV,le=Q
Vce =-5V, Ic=-5mA
Ic =-lQmA,la=-Q.5mA
Vce=-5mA, ic""-lQV
Vca=-lQV,le=Q
f=1.0MHz
Vce =-5V,lc=-lQQjAA
Vce=-Q.3V,lc=-lQmA

-50.
-50.

Rl/R2

Typ

Max

Unit

-0..1

V
V
,.,.A

30.
-0..3
20.0.
5.5

pF

-0..5
7
0..9

10.
1

V
MHz

-3
13
1.1

V
V
KO

Equivalent Circuit
Collector (Output)

R,
Beee (Input) ---"~.,-..,..--I

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

40.7

KSR2202

PNP EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN
INPUT ON VOLTAGE
1000

-100

-50

~~_=;O~t3V

-3C

R2=1OK

!:i

-10

....

-5

!Z
:>

i!;

Z

r--

C
CI

....
Z

,.
C

a:
a:

-3

100

-1

::>
0
0
Q

50

-0.5

1

30'

-03

-01

l/~,

W

~

J!.

Rz.... 10K

500
300

~

C

VCE-5V

R1 z 10k

-

-0.3

-1

3 -5

-10

Wi"

/

10

-30 -50 -100

3

lc(mAl. COLLECTOR CURRENT

5

30 50

10

100

3005001000

lc(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING

,

1000

....
Z
ffia:

:>
0

VCE=-5V

R.=10K
A2 -10K

500

...0

j

Z

30C

.,

250

iii

200

is

.

1\'\

\.

\

3l

100

0

0

0

}

350

~
.,~

300

a:

~

400

~

50

150

E

l

, 30

100

~
1\

0

i

10
0

0-4

0,8

V~OFF)

c8

1-2

L6

2,0

(V) INPUT OFF VOLTAGE

sAMSUNG SEMICONDUcroR

o

25

50

75

100

\

125

150

175

200

T,(°C(, AMBIENT TEMPERATURE

408

KSR2203

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
TO-92S

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R,=22KO, R,=22KO)
• Complement to KSR1203

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic

Rating

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Unit

-50
-50
-10
-100
300
150
-55-150

Vcso
VCEo
VEso
Ic
Pc
Tj
Tstg

V
V

V
mA
mW
DC
DC

•

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =2S0C)

t
Symbol

Characteristic

Collector-Base Breakdown Voltage
BVCBO
Collector-Emitter Breakdown Voltage BVceo
Collector Cutoff Current
. leBO
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Vcelsat)
Current Gain-Bandwidth Product
fr
Output Capacitance
Cob
Input Off Voltage
Input On Voltage
Input Aesistor
Aesistor Aatio

Viloff)
Vilon)
A,
A,/A 2

Test C6ndltlon

Min

Ic=-1OjoIA, le=O
Ic= -1 OOjoiA, Is=O
Vce=-40V, le=O
VcE=-5V. Ic=-5mA
Ic=-10mA.ls=-0.5mA
Vce=-5mA.lc=-10V
Vce=-10V.le=0
f=1.0MHz
VcE =-5V.lc=-100joiA
VCE=-0.2V.lc=-5mA

-50
-50

Typ

Max

Unit

-0.1

V
V
joIA

56
-0.3
200
5.5
-0.5
15
0.9

22
1

-3.0
29
1.1

V
MHz
pF
V
V
KO

Equivalent Circuit
Collector (Output)

A,
Base (Input)

----AvvV'----.--I
A,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

409

PNP .EPITAXIAL .SILICON TRANSISTOR

KSR2203
INPUT ON VOLTAGE

DC CURRENT GAIN

'00

1000

VeE- 0.2V
R.-22K
.R,-22K

50

~

..

500

30

...g~
i

VeE ':SIII
R.a.22K
~ 22K

300

II
'0

'I
~
3

I

,

I

01

I

~
c:J
i11/
II:
!i
0
l!l

100

1

30

/~

.

50

/'

"",,""
'0
0305

I

3

5

10

. 30 60 100

3

lc(mAI COLLECTOR CURRENT

5

POWER DERATING

,

400
VCE=5V

A t =22K
R!-l2K

tooo.
500

g

300

11/
II:

I

~

ff
350

I

I

II:

250
200

......

0

50

I..

30

l

0

}

30C

!l25

'00

0

11/

\,
\.

\

'50

~

'00

1\
\.

50
'0

o

0.4

0.8

12

1.6

2.0

V,(OFFl (V} INPUT OFF VOLTAGE

c8

300 500 1000

lc(mAI COLLECTOR CURRENT

INPUT OFF VOLTAGE

iII:

30 50' 100

10

SAMSUNG SEMICONDUCTOR

o

25

50

75

100

T"'°ct. AMBIENT

\

125

150

175

200

~TURE

410

KSA2204

PNPEPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-925

• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor(R,=47KO, R,=47KO)
• Complement to K5R1204

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic'
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

Unit

V

V
V
mA
mW
°C
°C

•

1, Emiiter 2, Collector 3, Base

ELECTRICAL CHARACTERISTICS (Ta = 25 0 C)
,Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-,'Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance .

BVCBO
BVceo
ICBO
hFe
Vce(sat)
Cob

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

Vi(off)
Vi(on)
R,
R,/R 2

IT

Test Condition

c

I =-10,.A,le=0
Ic=-100IlA,IB=0
VCB = -40V, le=O
VcE =-5V, Ic =-5mA
Ic=-10mA,I B =-,0.5mA
Vce =-5mA,lc=-10V
; VcB =-10V, le=O
f=1.0MHz
VCE=-5V,lc=-100,.A
Vce=-0.3V,lc=-10mA

Min

Typ

Max

Unit

-0.1

V
V
,.A

-50
-50
68
-0.3
200
5.5
-0.5
32
0.9

47
1

-3
62
1.1 '

V
MHz
pF
V
V
KO

Equivalent Circuit
Collector (Output)

R,
Base (Input)

--,--J'''''''V'"-r--I
R,

Em,tter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

411

PNP .EPITAXIAL SILICON TRANSISTOR

KSR2204

DC CURRENT GAIN
INPUT ON VOLTAGE
1000

-100
Vce~

-50

R1 ""47K
A2=47K

-3C

500
300

w

.i!
g
CO

~

i!

....

-10 f--

Z

C

-5

~

Z

w

-3

II:
II:

~

I

VeE ~5vl
R,- 47K
R.- 47K

0.3V

100

:>
(.)

-1

(.)
Q

:>

1

-0.5

50
30

-0.3

-0.1

1--0.3

-1

3

5

10

10

30 -50 -100

3

5

30 50

10

100

300 5001000

IdmA), COLLECTOR CURRENT
IclmA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING'
400

VCE-5V
R, "" 47K
RI -47K

1000

·350

,

~ 500

1300

\

I
I

(.)

~

II:

roo

J

50

i

,150

_

100

I

I

30

"\
~

200

1'\.

0
10

o

0.4

0.8

V~OFF)

c8

18

2.0

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUcToR

o

25

50

75

\.
\
100

125

150

175

200

T"°O), AMBIENT TEMPERATURE

412

PNP EPITAXIAL SILICON TRANSISTOR

KSR2205

SWITCHING APPLICATION (Bias Resistor Built In)
TO·92S

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R.=4.7KO, R.=10KO)
.. Complement to KSR1205

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Coliector·Base Voltage
Coliector·Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

V
V
V
mA
mW
°C
°C

•

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta =25°C)

Characteristic

Symbol

Min

Test Condition

Typ

Max

Unit

-0.1

V
V
,..A

'.

Coliector·Base Breakdown Voltage
Collector· Emitter Breakdown Voltage
· Collector Cutoff Current
DC Current Gain
Collector· Emitter Saturation Voltage
Current Gain·Bandwidth Product
Current Gain·Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

BVcBO
BVceo
IcBO
hFe
Vce(sat)
Cob

fr
Vi(off)
Vi(on)
R,
R,IR2

Ic =-10,.A,le=0
Ic=-100,.A,la=0
Vca=-40V, le=O
Vce =-5V, Ic=-5mA
Ic=-10mA,la=-0.5mA
Vca=-10V,le=0
f=1MHz
VCE='-10V,lc=-5mA
VCE=-'5V, Ic =-10o,..A
VCE=-0.3V,lc=-20mA

-50
-50
30
-0.3
5.5
200
-0.3
3.2
0.42

4.7
0.47

-2.5
6.2
0.52

V
pF
MHz
V
V
KO
'.

Equivalent Circuit

Collector (Output)

A,
Base (lnputtlG-----'ItNIo...----.--I

A,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

413

,KSA220S·.

PNPEPrrAXIAL, SILICONTAANSISFOA
INPUT ON VOLTAGE

m

-'OO_. .
~

-3C

VCE--O.3V
~~~

A.-'OK

-'OOO."~
VeE"" 5V
R1 4.7K

-500

'R:!_1OK'

-300

~

"-'OO.~_"'"
I=:~

g

i_'OIIV• •

~
:>
1-,
. . ._
-0.5

-5
-3

-0.3

-0.1

-,

0.3

3

5

10

-30

50

L

-~-~O"~~O~3~~-~'~~~3~5~~'~O--~-~30*=t..0~-'~0'0

100

IdmA), COLLECTOR CURRENT

. 1dmA), COLLECTOR CURRENT
'.

INPUT OFF VOLTAGE

POWER DERATING

400r---.---.---.---.---.---.---r--,

-'0000
Vee -5V-=

-5000

A,=4.7K-=

-3000

F
r

-'000

!i-500

t

a

aoo

I

;e-'O:::O
j

~

,

~
..
E

-.

"

I\.

0

\

20

-10

,.

0

:

'00

"

1\
I\.

0

-3

,
-0.1 -0.3

350

R2=10K

I
0.5

0.7

0.9

1.1

1.3

1.5

1.7

V,(OFf)(V), INPUT Off VOLTAGE

1.9 -2.1

25

50

75

~

100

125

150

175

200

T,("e), AMiiiENT TEMPeR~TURE

414

KSR2206

PNPEPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92S

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R, =10KO, R,=41KO)
• Complement to KSR1206

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
Vceo
VeBO
.Ic
Pc
Tj
Tstg

Rating

Unit

-50
-50
-10
-100
300
150
-55-150

V
V
V
rnA
mW
·C
·C

•

1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 0 C)
CharacterIstic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
. Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance

BVcBO
BVeeo
leBO
hFE
VeE(sat)
Cob

-50
-50

Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

h

le=- 1OI'A,le=0
le= -1 OOI'A, 18=0
VeB=-40V, le=O
Vce=-5V,le=-5mA
Ic=-10mA,18=-0.5mA
VCB=-10V,IE=0
f=1MHz
Vce=-10V,lc=-5mA
Vce=-5V,l c =-100,.,A
Vce=-0.3V,lc=-1mA

Vi(off)
Vi(on)
R,
R,/R2

Typ

Max

Unit

-0.1

V
V
,.,A

68
-0.3
5.5
200
-0.3

1
0.19.

10
0.21

-1.4
13
0.24

V
pF
MHz
V
'V

KG

,
Equivalent Circuit

R, .

Base

(lnput'~---4I\""'--.---t

R,

Emitter (Gnd)

.c8

SAMSUNG SEMICONDUCTOR

41Q'

PNP EPITAXIAL SILICON TRANSISTOR

KSR2206

DC CURRENT GAIN

INPUT ON VOLTAGE
-100
VCE

-SO

-O.3V

-30

~

a...
>

iZ

l!!

-10
,-5
-3

~

,.I

-1
-0.5
-03

-0.1

-0.3

-3
Ic(mA~

5

'-'1~0~'~~0~3~~_~'--~_~3~5~_~'~0--~_~30~_L5~0~_~'00

30 -50 -100

10

COLLECTOR CURRENT

Ic(mA~

INPUT OFF VOLTAGE
-10000

400

~';"~~~~

-5000
-3000
-1000

COLLECTOR CURRENT

POWER DERATING

350

R2""'47K_

II

I\,

!i-soo

111-300

\

~

r~:

II:

~

l

i-'O

Q..

\.

200

\

150

\

100

-5

-3
1
-0.1 -0.3 -0.5 -0.7 -0.9 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1

V.OFF)(V), INPUT OFF VOLTAGE

.c8

\.

0

SAMSUNG SEMICONDUCTOR

·25

50
T,(·C~

76

100

\

.125

·150

175

200

AMBIENT TEMPERATURE

416

PNP EPITAXIAL SILICON TRANSISTOR

KSR2207
SWITCHING APPLICATION

(Bias Resistor Built In)
TO-92S

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• Built in bias Resistor (R,=22K 0 R,=47KO)
• Complement to KSR1207

ABSOLUTE MAXIMUM .RATINGS (Ta =25°C)
Symbol

Rating

Unit

Vcao
VCEO
¥Eao
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

V'V
V
mA
mW
°C
°C

Characteristic
Collector-Base Voltage
Coliector-EmittE;lr Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

•

,. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Equivalent Circuit

BVcao
BVcEo
1980

hFE
Vcdsat)
Cob

fr
Vi(off)
Vi(on)
R,
R,/R 2

Test Condition

Min

Ic= -1 O,.A, IE=O
Ic=-100,.A,le=0
Vce =-40V, IE=O
VcE =-5V,lc =-5mA
Ic=-10mA,le=-0.5mA
Vce =-10V,IE =0
f=1MHz
VCE=-10V,lc=-5mA
VCE=-5V, Ic=-100,.A
VCE=-0.3V, Ic=-2mA

-50
-50

Typ

Max

Unit

-0.1

V
V
,.A

68
-0.3
5.5
200
-0.4
15
0.42

22
0.47

-2.5
29
0.52

,V
pF
MHz
V
V
KO

Collector (Output)

R,
Base

(Inputl_---"\,..,.,~-r---l

R,

Em,tter (Gnd)

..

cR

SAMSUNG SEMICONDUCTOR

417

PNP EPITAXIAL SILICON TRANSISTOR

KSR2207

INPUT ON VOLTAGE

DC CURRENT GAIN .

-100

-1000
VCE= 03V
AI 22K

-50
-30

~

-10

"

" -100

I.

g

..

R..-47K

-300

OJ

~

Vce=-5V
R, 22k

-500

~""47K

!;

-5

~

-3

U

-30

-1

1

-10

-50

.~

I

;:

/

-05

-5

-03

-3 ,-----

-

-

0.3

lc(mA~

COLLECTOR CURRENT

lc(mA~

INPUT OFF VOLTAGE

~~-22~=

/

-1000

I~

a

-300

B

. I

!!i-loo

I

-50
-30

j

-10

!..~

8
-5
-3
-1
-0.1

30

60

100

175

200

COLLECTOR CURRENT

I
03

0.5

0.7

1\

"- 1\

200

\

15a
100

1\
t\.

a

I0.9

1,1:-13

1.5

1.7 -1.9

VjOFl')(V), INPUT OF!' VOLTAGE

c8

-

35a

R,=47K_

!ii-500

~

- 10

400

-5000
-3000

::I

5

POWER DERATING

-10000

C£

3

SAMSUNG SEMICONDUCTOR

21

25

50

75

100

\

125

150

T.('C), AMBIENT TEMPERATURE

418

KSR2208

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING APPLICATION (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit Driver circuit
• Built in bias Resistor (~,=47KO, R,=22KO)
• Complement to KSR1208

TO-925

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

VCBo
VCEO
VEBO
Ic
Pc
Tj
Tstg

-50
-50
-10
-100
300
150
-55-150

Unit
V

V
V
mA

rrm
°C
°C

I

1. Emitter 2. Collector 3. Base .

ELECTRICAL CHARACTERISTICS (Ta

=

25 °C)

Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bar\dwidth Product
Output Capacitance

BVcao
BVcEo
lcao
hFE
VCE(sat)

Ic= -1 01olA. le=O
Ic=- 1OOIAA.IB=0
VCB=-40V,le=0
Vce=-5V; Ic=-5mA
Ic=-10mA.IB=-0.5I}lA
VCE=-5mA,lc=-10V
VcB=-10V,le=0
f=1.0MHz
Vce=-5V,lc=- 1OOIAA
Vce=-0.3V,lc=-2mA

-50
-50

Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio

h
Cob
Vi(off)
Vi(on)
R.l
Rl/R2

Typ

Max

Unit
V
V

-0.1

lolA

-0.3

V
MHz
pF

56
200
5.5
-0.8
32
1.9

47
2.1

-4
62
2.4

V
V

KO

Equivalent Circuit
Collector (Output)

R,
Base (Input)

R,

Emitter (Gnd)

c8

SAMSUNG SEMICONDUCTOR

419

.PNP EPITAXIAL S~LICON TRANSISTOR

KSR2208

DC CURRENT GAIN
INPUT ON VOLTAGE
IDOO

-100

Vc.;L -bV

R,-47K
R.- 22K

~CE-':~.~

-50

~,.

500

-3C
Z

300

..

C
CJ

V

Z

W
II:
II:

::>

I-<""'

0

100

,

CI

c

~
J:

50
30

-0.5
-03

: -0.1

a

-0.

-,

I -

10

1- )0

1

3

to

5

30 50

tOO

300 600 1000

1c(mA), COLLECTOR CURRENT

Ic(mA) COLLECTOR CURRENT

INPUT OFF VOLTAGE
POWER DERATING

I

1000

400

VCE=5V

I

R,-47K
R,=22K

350

i 2~

I

I

z

30C

II:

200

~
~
..
E

1\\

\.

\

150
100

'\
~

0

10

o

0.4
V~OFF)

c8

08

1.2

1

e

2.0

(V) INPUT OFF VOLTAGE

SAMSUNG SEMICONDUCTOR

\
25

50

75

100

125

150

175

200

T,(°O), AMBIENT TEMPERATURE

420

PNP EPITAXIAL SILICON' TRANSISTOR

KSR2209

SWITCHING APPLICATION' (Bias

Resistor Built In)
TO·925

• Switching Circuit, Inverter, Interface circuit
Driver circuit
• auilt in bias Resistor (R=4.7KD)
• Complement, to K5R1209

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Symbol

Rating

Unit

VCBO '
VCEO
VEBO
Ic
Pc
Tj
Tstg

-40
-40
-5
-100
300
150
-55-150

V
V
V
mA
mW
·C
·C

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Te.mperature
Storage Temperature

1.

•

Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS (Ta= 25 °C)
Characteristic

Symbol

Cc:>lIector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage'
Output CapaCitance

BVceo
BVCEo
ICBO
hFE
VCE(sat)
Cob

Current Gain-Bandwidth Product
Input Resistor

h
R,

Equivalent Circuit

Test Condition
Ic= -1 OO~, IE=O
Ic=-1mA,la=0
Vca =-30V,IE=0
VcE =-5V,lc =-1mA
Ic =-10mA,la=-1mA
Vca=-10V,IE=O
f=1MHz
VCE=-10V,lc=-5mA

Min

Typ

Max

-40
-40
-0.1
600
-0.3

100
5.5

3.2

200
4.7

Unit
V
V
~
V
pF
MHz

6'.2

KO

Collector (Output) ,

R,
Base (lnput~----«i,.,..---:--t

Emitter (Gnd)

=8

SAMSUNG SEMICONDUCTOR

421

,'t-+-r
0.1

o.a

II
0.5

3

o
5

10

30 50 100

Ie (mAl. COLLEcroR CURRENT

c8

SAMSUNG SEMICONDUCTOR

1

10

20 30

50

100

Yeo (V). COLLECIOII-BASE VOLT_

434

NPN EPITAXIAL SILICON TRANSISTOR

2N4123

GENERAL PURPOSE TRANSISTOR
TO-92

• Coliector-Emitter.Yoltage: VcEo =30V
• Collector Dissipation: Pc (max)=625mW

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

40
30
•
5
200
625
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
• Refer to 2N3904 for grapfls

•

1. Emitter 2. Base 3 Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
·Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
·DC Current Gain

BVcso
BVceo
BVEso
Icso
leso
hF£

·Collector-Emitter Saturation Voltage
·Bas~-Emitter Saturation Voltage
Current Gain Bandwidth Product

VCE (sat)
Vse (sat)

h

Output Capacitance

Cob

Collector-Base Capacitance

Ccb

Test Conditions
Ic =10pA, IE =0
Ic=1mA,ls=0
IE=10pA,lc=0
Vcs=20V, le=O
Vse=3V,lc=O
Ic=2mA, Vce=1V
Ic =50mA, Vce=1V
Ic=50mA,ls=5mA
Ic =50mA, Is =5mA
Ic =10mA, Vce=20V
f=100MHz
Vcs=5V,le=0
f=1MHz
Vcs=5V,le=0
f=100KHz

Min

lYP

Max

40
30
5

50
50

50
150

Unit
V
V
V
nA.
nA

25
0.3
0.95
250

V
V
MHz

4

pF

4

pF

• Pulse Test: Pulse Width:s; 300fls, Duty Cycle:s; 2%

c8

SAMSUNG SEMICONDUCTOR

.435

NPN EPitAXIAL SILICON TRANSISTOR

2N4124.

GENERAL PURPOSE TRANSISTOR
• Collector·Emltter Voltage: Vceo =25V
• Collector Dissipation: Pc (max)=625mW

TO-92

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

30
25
5
200
625
150
-55-150

V
V

Collector-Base Vaitage
· Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

V •
mA
rrfN
OC
°C

• Refer to 2N3904 for graphs

1. Emitter 2. Base 3. Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic .

Symbol

Collector-Base Breakdown Voltage
·Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
-DC Current Gain

BVcBO
BVcEO
BVEBO
IcBO
lEBO
hFE

·Collector-Emitter Saturation Voltage
·-Base-Emitter Saturation Voltage
Current Gain Bandwidth Product

Vee (sat)
VeE (sat)

fr

Output Capacitance

Cob

Collector-Base Capacitance

Ccb

Test Conditions
Ic .. 1OpA,IE=0
Ic=1mA,le=0
IE=10pA,lc"0
Vce=20V,IE=0

Min
30
25
5

VeE=~,lc=O

Ic=2mA, VcE =1V
Ic .. 50mA, VcE =1V
Ic=50mA,ls=5mA
Ic .. 50mA,ls=5mA
Ic =10mA, VCE =2OV
f=100MHz
Vcs=5V,IE=0
f=1MHz
Vcs=5V,IE=0
f .. 100KHz

120

Typ

,

Max

Unit
V
V
., V

50
50
360

nA
nA

0.3
0.95

V
V
MHz

4

pF

4

pF

60
300

• Pulse Test: Pulse Width :s 3OO/AS. Duty Cycle:s 2%

c8

SAMSUNG SEMICONDUCTOR

436

2N4125

.PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
T0-92

• Collector-Emitter Voltage: VCEO =30V
• Collector Dissipation: Pc (max)=625mW

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VeEo
Veeo
VEeo
Ic
Pc
Tj
Tstg

30
30
4
200
625
150
-55-150

V

I

V
V
mA
mW
°C
°C

• Refer to 2N3906 for graphs

1. Emitter 2. Base 3

I

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

·Collector-Emitter Breakdown Voltage I
COlleCtor-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
·DC Current Gain
·Collector-Emitter Saturation Voltage
·Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Noise Figure

I

BVCEo
BVeeo
BVEeo
leBo
lEBO
hFE
Vce(sat)
Vee (sat)

iT

Cc'b
NF

Test Conditions
le'=1mA;l e =0
Ie =10~. IE =0
IE =10~. Ie =0
Vce =20V. IE =0
VeE ='311. Ie =0'
Ie =2mA. VeE =1V
1c;=50mA. VCE=1V
Ic =SOmA. Ie = SmA
Ie =50mA. Ie =5mA
Ic=10mA. Vce=20V
f=100MHz
Vce=5V.IE=0 f=1MHz
le=100~. VCE=5V
RG=1KO
Noise Bandwidth=
10Hz to 15.7KHz

Min

Typ

Max

30
30
4

50
25

50
50
150

OA

Unit
V
V
V
nA
nA

V

0.95
200

MHz
4.5
5

pF
. dB

·Pulse Test: Pulse Width ::;;300fAS. Duty Cycle::;; 2%

ciS

SAMSUNG

S~MICONDUcroR

437

P~P

2N4126

EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCEO =25V
• C.ollector Dissipation: Pc (max)=625mW .

TO-92

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit·

Veeo
Vcao
VeBO
Ie
Pc
Tj
Tstg

25
25
4
200
625
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
• Flefer to 2N3906 for graphs

1. Emitter 2. Base 3. Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic
·Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off,Current
·DC Current Gain
·Collector-Emitter Saturation Voltage
·Base-Emitter Saturation Voltage
Current Gain Bandwidth Product

Sym,bol

,.

BVcEo
BVCBO
BVeao
ICBO
leBO
hFE
Vcdsat)
Vae (sat)

h

Collector ease Capacitance

Ccb

Noise Figure

NF

' Test Conditions

Min

Ic=1rnA,la=0
Ic =10pA, Ie =0
Ie =10pA, Ie =0
Vea=20V,le=0
Vae=3V,lc=0
Ic=2mA, Vce=1V
Ic .. 50mA, Vce=1V
Ic .. 50mA, la =5mA
Ic=50mA,la=5mA
Ic =10mA;Vce=20V
f=100MHz
Vca=5V,le=0
f=1MHz
Ic =100pA, Vce=5V
Rg -=1KO
Noise Bandwidth=
10Hz to 15.7KHz

25
25
4

120

lYP

Max

50
50
360

Unit
V
V
V
nA
nA

60
0.4
0.95

V
MHz

250
4.5

pF

4

dB

Pulse Test: Pulse Wid~300f.lS, Duty Cycl~2%

c8

SAMSUNG SEMICONDUCTOR

438

NPN EPITAXIAL SILICON TRANSISTOR

2N4400

GENERAL PURPOSE TRANSISTOR
• Collector-Emitter Voltage: V CEO =40V
• ColleCtor Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
Vcm
VEBO
Ie
Pc
Tj
Tstg

60

V
V
V
mA
mW

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

40
6
600
625
150
-55-150

DC
DC

I

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
*Collector-Emitter Breakdown Voltage
Emitter-Sase Breakdown Voltage
Collector Cut-off Current
*DC Current Gain

Symbol
BVcBO
BVcm
BVEBO
'eEX
hFE

*Coilector-Emitter Saturation Voltage

Vce (sat)

*Base-Emitter Saturation Voltage

Vae (sat)

Collector-Base Capacitance

Ccb

Current Gain Bandwidth Product

h

Turn On Time

ton

Turn Off Time

totl

Test Conditions
Ic =100pA, IE =0
Ic=1mA,la=0
IE=100pA,lc =0
VeE =35V, VEa =0.4V
Ic=1mA, Vce=1V
le=10mA, Vce=1V
le=150mA, Vee=1V
le=500mA, VeE=2V
le=150mA,la=15mA
le=500mA,la=50mA
Ic=150mA,la=15mA
Ic=500mA,la=50mA
Vca=5V,le=0
f=100KHz
Ic =20mA, VCE =10V
f=100MHz
Vee =3OV, V~a =2V
le=150mA,lal =15mA
W.e =3Ov, Ic =150mA
lal =la2 =15mA

Min

lYP

Max

Unit

100

V
V
V
nA

60
40

6
20
40
50
20

0.75

150
0.4 .
0.75
0.95
1.2
6.5

200

V
V
V
V
pF
MHz

35

ns

255

ns

* Pulse Test: Pulse Width~300I'S, Duty Cycles2%

c8

,SAMSUNG SEMICONDUCTOR

439

. ,NPN EPITAXIAL SILICON TRANSISTOR

2N4400
DC CU~RENT GAIN

CURRENT GAltwlANDWIDTH PRODUCI'
1000

"'" \.vco.,w

"'tJ,W

~~

<-

-.;;;::: :::,';"'i"

~

Vee

II

I

10

3

5

10

30 50

100

'300 500

10
:1

1000

5

10

30 50

3001600 1000

100

Ie (.....1. COLLECTOiI CURRENT

Ie (.....1. COLLI!c:IOR CURRENT

COLLECTOR-EMmER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE

COLLECTOfI-BASE CAPACITANCE
OUTPUT CAPACITANCE

10

r-

1e.1010

VBE(1at)

1

"""I

~ ::;:",.Cob

.1 H

COb 1.1

z

1

Vee (eat)

I
3

5

10

30 50

1

100

3OO~

1000

1

3

5

10

30

50

100

,300

Ie (mAl. COI.LEC1'OR CURRENT

, c8

SAMSUNG

S~~ICONDUCTOR

440

2N4401

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
TO-92

• Collector-Emitter Voltage: VCEo=40V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
Vceo
Veeo
Ic
Pc
Tj
Tstg

60
40
6
600
625
150
-55-150

V
V
V
mA
mW

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

OC
°C

• Refer to 2N4400 for graphs

1. Emitter 2

Base 3

•

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
"Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
"DC Current Gain

Symbol
BVcBO
BVcEO
BVeBO
IcEX
hFe

"Collector-Emitter Saturation Voltage

Vce (sat)

"Base-Emitter Saturation Voltage

Vee (sat)

Collector-Base Capacitace

Ccb

Current,Gain Bandwidth Product

h

Turn On Time

ton

Turn Off Time

toft

Test Conditions
Ic=100pA,le=0
Ic=1mA,le=0
le=100pA,lc =0
Vce =35V, Vee=0.4V
Ic=0.1mA, Vce=1V
Ic=1mA, VCe =1V
Ic=10mA, Vce=1V
Ic=150mA, VcE =1V
Ic =500mA, Vce=2V
Ic=150mA,le=1SmA
Ic =500mA, Ie =50mA
Ic=150mA,le=15mA
Ic =500mA, Ie =50mA
Vce=5V,le=0
f=100KHz
Ic=20mA, Vce=1OV
f=100MHz
Vcc=3OV, Vee=2V
Ic =150mA, le1 =15mA
Vcc=3OV. Ic=150mA
le1 ",1B2 -15mA

Min

TYP

Max

Unit

100

V
V
V
nA

60

40
6

20
40
60
100

300

40

0.75

0.4
0.75
0.95
1.2
6.5

250

V
V
V
V
pF
MHz

35

ns

255

ns

" Pulse Test: Pulse Width :s 3001-15, Duty Cycle:s 2%

c8

SAMSUNG SEMICONDUCTOR

441

·PNP,·EPITAXI~L SILICON TRANSISTOR

2N4402

GENERAL PURPOSE TRANSISTOR
TO-92

• Collector-Emitter Voltage: Vceo=4OV
• Collector Dissipation: Pc (max)=625mW'

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol
VC9/l
VCEO
VEao
Ic'
Pc
Tj
Tstg

Rating

40
40
5
600
625
150
-55-150

Unit
V
V
.V
mA
rrfN

OC
°C

• Refer to 2N4403 for graphs

1. Emitter 2. Base 3. Collecfor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base BreakdQWn Voltage
·Collector-Emitter Breakdown Voitage
Emitter-Base Breakdowr. Voltage
Collector Cut-off Current
Base Cut-off Current
DC Current Gain

BVC9/l
BVcEO
BVEBO
ICEX
laEY
hFE

"Collector-Emitter Saturation Voltage

VCE (sat)

*Base-El)1itter Saturation Voltage

VaE (sat)

Current Gain Bandwidth Product

fr

Collector-Base Capacitance

Ccb

Turn. On Time

ton

Turn Off Time

toff

Test Conditions
Ic",,0.1mA.IE-0
Ic=1mA.IB=0
IE-0.1mA.lc=0
VcE =35V. VaE=0.4V
VcE =35V, VaE=0.4V
Ic=1mA. VcE =1V
Ic=10mA. Vce=1V
"lc=150mA. VcE =2V .
"lc=.500mA. VCE.='ZV
Ic=150mA.la=15mA
Ic=500mA.la=5OmA
Ic=150rM.la-15mA
Ic=500mA.IB=5OmA
Ic=20mA. VcE =1OV
f=tOOMHz
Vca -1OV.IE=0
f .. 14OKHz
Vcc·-3OV.lc =150mA
lal =15mA. Va£=2.OV
Vcc=3OV.lc=15OmA
IB1 =1B2~15mA

Min

lYP

Max

Unit

100
100

V
V
V
nA
nA

40
40
5
30
50
50
20

0.75 .

150
0.4
0.75
0.95
1.3

V
V
V
V
MHz

8.5

pF

35

ns

255

ns

150

• Pulse Test: Pulse Width:s 300,..s, Duty Cycle:s 2%

c8 SAMSUN~

SEMICOND':'CTOR

442

PNP EPITAXIAL SILICON TRANSISTOR

2N4403

GENERAL PURPOSE TRANSISTOR
TO-92

• Collector-Emitter Voltage: V CEO =40V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUI\II RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEao
Ic
Pc
Tj
Tstg

40
40
5
600
625
150
-55-150

V
V
V
rnA
mW
°C
°C

1. Emitter 2. Base 3

I

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base BreakdOwn Voltage
Collector Cut-off Current
Base Cut-off Current
DC Current Gain

Symbol

Test Conditions

BVcao
BVcEO .
BVEBO
ICEX
laEv
hFE

Ic=O.lmA,IE=O
le=lmA,la=O
IE=O.lmA,le=O
VcE =35V, VaE =0.4V
VCE =35V, VaE =0.4V
Ie =0.1 rnA, VCE=1V
Ie =lmA, VCE =lV
Ie =10mA, VCE =1V
'le=150mA, VCE=2V
, Ie =500mA, VeE =2V
Ie =150mA, la =15mA
le=500mA,la=50mA
Ie =150mA, la =15mA
Ie =500mA, la =50mA
I~ =20mA, VCE =10V
f=100MHz
Vca =10V,IE=0
f=l40KHz
Vcc=3OV,lc=150mA
la1 =15mA, VaE =2.OV
Vec=3OV,lc=150mA
la1 =1B2=15mA

'Collector-Emitter Saturation Voltage

VCE (sat)

'Base-Emitter Saturation Voltage

VaE (sat)

Current Gain Bandwidth Product

h

Collector-Base Capacitance

Ccb

Turn On Time

ton

Turn Off Time

toff

-

Min

lYP

Max

Unit

100
100

V
V
V
nA
nA

40
40
5

30
.60
100
100
20

0.75

300
0.4
0.75
0.95
1.3

V
V
V
V
MHz

8.5

pF

35

ns

255

ns

200

, Pulse Test: Pulse Width ~ 300'",5, Duty Cycle ~ 2%

ciS SAMSUNG SEMICONDUCTOR

443

2N4403,

PNP EPITAXIAL SI~ICON TRANSISTOR
DC CURRENT GAIN

BASE-EMITTER ON VOLTAGE

1000

200

500
300I

r-

Vee_

100

r-....

I--

a

J

VeE- fN

100

1
i!

50
30

0

II
110

5

1,

1
3

5,

10

30 50

100

300 500 1000

0.2

Ie (mAl. COLLECTOR CURRENT

D.4

1.0

0.6

1,2

V.. M.IlASE-EMITTER VOLTAGE

, BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT
10

1000

I--

~

VCi-1OV

-

I-- Ie "",101e

~,

1'.

BE(satl'

50
30

V

10

Vce(aat)

5
3

I.

0.01
3510

3050

100

300 500

1000

Ie (mAl. COLLECTOR CURRENT

, 1

3

5

10

30 50

100

300 500

, Ie (mA). COLLECI'OR CURRENT

COLLECTOR-BASE CAPACITANCE
100

,
r--!-I4OKH

1----.,-"'.0
30

r-- t- '
......
3

1
3510

3050100

Vea M. COLLECI'OR-IIASE VOLTAGE' .

c8

SAMSUNG SEMICONDUCTOR

444

PNP EPITAXIAL SILICON TRANSISTOR

2N5086
AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter Voltage: Vceo=5OV
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta ::::25°C)
CharacteriStic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
TJ
Tstg

Rating

50
50
3
50
625
150
-55-150

Unit
V
V
V
rnA
mW
°C
°C

I

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Charactarlstlc

Symbol

Collector-Base Breakdown Voltage

I· Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

BVcBO
BVcEO
Icao
lEBO
hFE

Collector-Emitter Saturation Voltage
. Base-Emitter On Voltage
Current Gain Bandwidth Product

VCE (sat)
VaE(on)

h

Collector-Base Capacitance

Ccb

Noise Figure

NF

• Puls.e Test: Pulse Width

c8

Test Conditions

Min

Ic=100pA,IE=0
Ic=1mA,la=0
Vca =lOV,IE=O
Vca=35V,IE=O
VaE =31/, Ic =0
Ic =100pA, VCE ';'5V
Ic =1mA, VCE =5V
·lc =10mA, VCE=5V
Ic=10mA,la=lmA
Ic =lmA, VCE =5V
Ic =500pA, VCE =5V
f=20MHz
Vca =5V,IE=0
f=100KHz
Ic =20pA, Vee =5V
Rs=10KO
f=10Hz to 15.7KHz
Ic =100pA, Vee =5V
Rs =3KO, f .. 1KHz

50
50

lYP

Max

10

50
150
150
150

50
500

0.3
0.85
40

Unit
V
V
nA
nA
nA

V
V
MHz

4

pF

3

dB

3

dB

s 300j.lS, Duty Cycle S 2%

SAMSUNG SEMICONDUCTOR

445

PNPEPITAXIAL SILICON .TRANSISTOR
BASE-EMITTER ON VOLTAGE

DC CURRENT GAIN
1000
500
300

100

I--

50

VCE_5

2N 087

~

is
jll00

:m

2N 086

!ii

I-- r- Vce =5

30

I

1

1

,0

ii

50

8

30

,~

:

i

10

:t

1

~

!l

1

S
Jlo.s

D.3

0.1
0.1

o.s

D.3

3

6

10

30 50 100

0.6

0.6

1.0

1.2

vie (V). BASE-EMITTER VOLTAGE .

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

CURRENT GAIN BANDWIDTH PRODUCT
1000

0

0..

0.2

Ie (mA). COLLECTOR CURRENT

10

~
!:j

t-- VCE_5V

i

5

t--

I---"'"

Ii!!i

1

~o.s
~

!

le"'~IB

3

.~

I::::::::'::

11

VB. (sat)

03

~

>:.

0

0.1

!lo.os ~

5

VeE (Sal)

>

0.03

3

1

0.01
0.1

D.3 0.5

3

5

10

30 50

100

0.1

D.3

o.s

3

5

10

30 50

100

Ie (rnA), COLLeCTOR CURReNT

Ie (rnA), COLLECI'OR CURRENT

COLLECTOR·BASE CAPACITANCE

12

!

f-LJK~z
I~-O

1---

10

r--....

r-...
i'

r--

0
10

30

50

100

VeB (V). COLLECTOR-BASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

446

PNP EPITAXIAL SILICON TRANSISTOR

2N5087
AMP~IFIER

TRANSISTOR
TO-92

• Collector-Emitter Vo'ltage: Vceo =50V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
. Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

V~BO
VCEO
VeBO
Ic
Pc
Tj
Tstg

Rating
50
50
3
50
&25
150
-55-150

Unit
V
V
V
mA
mW
°C
°C

" Refer to 2N5086 for graphs

•

1. Emitter 2. Base 3. Collecfor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
"Collector-Emitter Breakdown Voltage
Collector Cut-off Current

BVcaO
BVceo
ICBO

Emitter Cut-off Current
DC Current Gain

leBO
hFe

Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product

Vce (sat)
Vee (on)

Collector-Base CapaCitance

Ccb

Noise Figure

NF

h

Test Conditions

Min

Ic=100pA,le=0
Ic=1mA,le=0
Vce=1OV,le=0
Vce=35V, le;"O
Vee =3V,lc ':"O
Ie =100pA, Vce =5V
Ic=1mA, Vce=5V
"lc=10mA, Vce=5V
Ic=10mA,le=1mA
le=1mA, Vce=5V
Ic=500pA, Vce=5V
f=20MHz
Vcs=5V,le=0
f=100KHz
Ic =20pA, Vce =5V
Rs=10KO
. f=10Hz to 15.7KHz
Ic =100pA, Vce=5V
Rs =3KO, f=1KHz

50
50

.250
250
250

Typ

Max

10
50
50
800

0.3
0.85
40

Unit·
V
V
nA

nA
nA

V
V
MHz

4

pF

2

dB

2

dB

• Pulse Test: Pulse Width:::; 300IlS, Duty Cycle:::; 2%

c8

447

SAMSUNG SEMICONDUCTOR

NPN EPITAXIAL SIL_ICON TRANSISTOR'

2N5088
AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter VOltage: Vceo=3OV
• Collector Dissipation: Pc (m~x)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Rating

Symbol
Vceo
Vceo
VeBO
Ic
Pc
Tj
Tstg

35
30
4.5
50
625
150
-55-150

Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
'Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

Collector-Emitter Saturation Voltage
'Base-Emitter On Voltage
Current Gain Bandwidth Product

Symbol
BVCBO
BVceo
lceo
leBO
hFE

Vce (sat)
Vedon) .

fr

Collector Base Capacitance

Ccb

Noise Figure

NF

Test Conditions
Ic =1OOpA, IE =0
Ic=1mA, Ie =0·
Vce=2OV,·le=O

Min

Max

35

30

VBe=~,lc=O

VBe =4.sV, 16 =0
Ic =100pA, Vce=5V
Ic =1mA, Vce =5V
'lc=10mA, Vce=5V
Ic=10mA,le=1mA
Ic=10mA, Vce=5V
Ic =500pA, Vce =5V
f=20MHz
VCB =5V.le =0
f=100KHz
Ie =100pA, Vce =5V
Rs =10KO
f=10Hz to 15.7KHz

Typ

300
350
300

50
50
100
900

0.5
0.8
50

Unit
V
V
nA
nA
nA

V
V
MHz

4

'pF

3

dB

, Pulse Test: Pulse Width ~ 300jAS, Duty Cycle ~ 2%

c8

SAMSUNG SEMICONDUCTOR

448

12NS088

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

CURRENT GAIN BANDWIDTH PRODUCT

1000

500
300 -VCE_5V

2N5209

°

1
0.1

D.3 o.s

3

5

10

30 50

100

0.1

0.3 0.5

Ie (mAl, COLLECIOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
6

f-- f-1o.'010

10

30 50 100

eorr:!~HZ

.1"- 1'..

V.. (satl

•

II
r-- ce~ll~~
IIE,-q. I

5r--

,

"- I ......
.........

1

r---f--

0.,

Vee (satl

II
D.3

1

Cob
I I

F1'

-

1

II
11

1111
3

10

30

Ie (mAl, COLLECTOR CURRENT

c8

5

OUTPUT CAPACITANCE
COLLECTOR-BASE CAPACITANCE

10

f--

3

Ie (mAl, COLLECIOR CURRENT

SAMSUNG SEMICONDUCTOR

100

10

30

50

100

200

Yes (V), COU~ECTOR BASE VOLTAGE

449

NPN EPITAXIAL SILICON TRANSISTOR'

2N5088.

:-DC CURRENT GAIN

300~

CURRENT GAIN BANDWIDTH PRODUCT

f-- f-vcE_5V

2N5209

V

1

0.1

0.3 0.5

3

5

10

30 50

100

Ie (mA), COLLECTOR CURRENT

0.1

0.3

o.s

3

5

10

30 50 100

Ie (mA), COLLECTOR CURRENT

NOISE FIGURE
0
VCE-5V
f_10Hz

_%,l ~ ~~'ti
'"":~

~~'\.

\\

1

r-....

"'r--.

\
'-""""

I'....

0.01
0.1

Q.3 0.5

3

5

10

30 50

100

Ie (mA), COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

450

2N5089

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER .TRANSISTOR

r--------'------.

• Collector-Emitter Voltage: VcEo =25V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
, Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Veeo
VeEo
VEeo
Ie
Pc
Tj
Tstg

30
2S
4.S
SO
625
lS0
-SS-150

V
V
V
mA
mW
°C
°C'

• Refer to 2NS088 for graphs

•

1 Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic
Collector-Base Breakdown Voltage
·Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

Cqllector-Emitter Saturation Voltage
'Base-Emitter On Voltage
Cu'rrent Gain Bandwidth Product .

Symbol
SVeeo
1:lVeEo
le~o
lEe,
hFE \

,.

Vee(sat)
VeE (on)',

fr

Collector Base CapaCitance

Ccb

Noise Figure

NF

,

Test Conditions

Min

Ie =100pA, IE =0
Ie =lmA, Ie =0
Vee =15V, iE=O
VeE =3V,le =0
VeE =4,SV,le=0
le=100pA, VeE=5V
le=lmA, VCE=SV
·le =10mA, VeE =5V
Ie =10mA, Ie =lmA
Ic=10mA, VeE=SV
le=SOOpA, VeE=SV
f=20MHz
Vee=SV, iE=O
f=100KHz
le=l00pA, VeE=SV
s =10KIl.
.
flOHz to lS.7KHz

30
25

'f

400
450
400

Typ

Max

50
50
100
1200

·O.S
0.8
SO

Unit
V
V
nA
nA
nA

V
V
MHz

4

pF

2

dB

• Pulse Test: Pulse Width ::;;300jAs, Duty Cycle::;; 2%

...

cR SAMSUNG SEMICONDUCTOR

451

NPN EPITAXIAL·SILICON TRANSISTOR

2N5209.
AMPLIFIER TRANSISTOR
• Collector-Eml"er Voltage: VCEO =50V
• Collector Dissipation: Pc (max)=625mW
I\'"

TO-92

.

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
.Characteristic
Collector-Bas", Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Drssipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vceo
Vcro
VEBO
Ic
Pc
Tj
Tstg

50
50
4.5
50
·625
150
-55-150

V
V
V
mA
mW

°c
°c

• Refer to 2NS088 for graphs
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
.Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-ofi Current
Emitter Cut-ofi Current
DC Current Gain

BVceo
BVcEo
ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product

VCE (sat)
VeE (on)

h

Collecior Base Capacitance

Ccb

Noise Figure

NF

Test Conditions

Min

Ic =100pA,IE=0
Ic=lmA,le=O
Vce =3SV, IE =·0
VeE ='$\/, Ic=O
Ic =100pA, VCE =SV
Ic=lmA, VCE=SV
*lc=10mA, VCE':'SV
Ic =10mA, Ie =lmA
Ic=lmA, VCE=SV
Ic =500pA, VCE=SV
f=20MHz
Vce=SV,le=O
f=100KHz
Ic =20pA' VCE =SV
Rs=22KO
f=10Hz to lS.7KHz
Ic =20pA, VCE=SV
Rs =10KIl, f=lKHz

50
50

100
150
150

~p

Max

50
50
300

0.7
0.85
30

Unit
V
V
nA
nA

V
V
MHz

4

pF

3

dB

4

dB

• Pulse Test: Pulse Widths; 3001'5. Duty Cycle S; 2 0k

c8

SAMSUNG SEMICONDUCTOR

·452

NPN EPITAXIAL SILICON TRANSISTOR

2N5210
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VcEo=50V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta = 25°Cj
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcso
VCEO
VEBO
Ic
Pc
Tj
Tstg

50
50
4.5
50
625
150
-55-150

V
V
V
mA
mW
°C
'oC

•

" Refer to 2N5088 for graphs
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
"Collector-Emitter Breakdown Voltage
. Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

BVcso
BVcEo
Icso
IESO
hFE

Collector-Emitter Saturation Voltage
. Base-Emitter On Voltage
Current Gain Bandwidth Product

Vce(sat)
VSE (on)'

h

Collector Base Capacitance

Ccb

Noise Figure

NF

Test Conditions

Min

Ic =100,.A, IE =0
Ic=lmA,ls=O
Vcs =35V,IE=0
V sE ,,!,3V,l c =O
Ic =100,.A, VcE =5V
Ic=1mA, VcE =5V
"lc=10mA, VcE =5V
Ic =10mA, Is =1mA
Ic=1mA, VcE =5V
Ic =500,.A, VCE =5V
f=20MHz
Vcs =5V,IE=0
f=100KHz
Ic =20,.A, VCE =5V
Hs=22Kll
t;=10Hz to 15.7KHz
Id=20,.A, VcE =5V
Rs .. 10KO, f=1KHz

50
50

200
250
250

. lYP

Max

50
50
600

0.7
0.85
30

Unit
V
V
nA
nA

V
V
MHz

4

pF

2

dB

3

dB

"Pulse Test: Pulse Width::; 300jJS, Duty Cycle::; 2%

c8

SAMSUNG SEMICONDUCTOR

453

2N5400

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
~ Collector-sase Voltage: VcEo=120V
• Collector Dissipation: Pc (max)=625mW

TO-92

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

Vcoo
VCEO
VEao
Ic
Pc
Tj
Tstg

130
120
5
600

V
V
V
rnA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

625
150
-55-150

• Refer to 2N5401 for graphs
1. Emitter 2. Base 3. Collector

ELECTRI~L CHARACTERISTICS
. Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
·DC Ourrent Gain

Symbol.
BVcBO
BVcEo
BVEao
Icao
IEao
hFE

"Collector-Emitter Saturation Voltage

VCE (sat)

"Base-Emitter Saturation Voltage

Vadsat)

Current Gain Bandwidth Product

fr

Output Capacitance

Cob

Noise FigurE'

NF

• Pulse Test: Pulse Width~300!iS. Duty

c8

=

(Ta 25°C)
Test Condition

Min

.Ic =100pA. IE =0
Ic=lmA.la=O
IE=10pA.lc=0
Vca=10OV.IE=0
VEa =3V. Ic =0
Ic =lmA. VCE =5V
Ic=10mA. VCE=5V
Ic =50mA. VeE =5V
Ic=10mA.la=lmA
Ic =50mA. la =5mA
Ic=10mA.la=lmA
Ic =50mA. la =smA
Ic=10mA. VCE=10V
f=100MHz
Vca=10V.IE=0
f=IMHz
Ic=250pA. VCE=5V
Rs=IKO
f=10Hz to 15.7KHz

130
120
5

lYP

Max

Unit
V

V
100
50

V
nA
nA

30
180

40
40

.'
100

0.2
0.5
1
1
400

,
V
V
V
V
MHz

6

pF

8

dB

Cycle~2%

SAMSUNG SEMICONDUCTOR

454

PNP EPITAXIAL SILICON TRANSISTOR

2N5401.
AMPLIFIER TRANSISTOR

TO-92

• Collector~Emltter Voltage: VCE.O =15OV
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
COllector-Emitter Voltage
Emitter-Base Voltage'
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBo
VCEo
VeBO
Ic
Pc
Tj
Tstg

160
1?0
5
600
625
150
-55-150

V
V
V
mA
mW
°C

OC
1 EmItter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Collector-Base Breakdown Voltage
"Collector-Emitter Breakdown Voltage·
Emitter-Base Breakdown Voltage
Collector Cut-off Current
1
Emitter Cut-off Current
"DC Current Gain

Test Conditions

Symbol

Ic=100~,le=0

BVCBO
BVceo
BVeBO
ICBO
leBO
hFe

"Collector-Emitter Saturation Voltage

Vce (sat)

"Base-Emitter Saturation Voltage.

VBe (sat)

Current Gain Bandwidth Product

h

Output Capacitance

Cob

Noise Figure

NF

\

,

Ic=1mA,IB=0
le·=10pA,lc=0
Vca = 12OV, Ie =0
VeB=3V,lc =0
Ic=1mA, Vce=5V
Ic=10mA, Vce=5V
Ic=50mA, Vce=5V
Ic=10mA,IB=1mA
Ic =50mA, IB =5mA
Ic =10mA,IB=1mA
Ic =50mA,IB=5mA
Ic =10mA, Vce=10V
f=100MHz
VcB =10V,le=0
f=1MHz
'lc=250~, Vce=5V
'Rs =1KIl
f=10Hz to 15.7KHz

Min

Typ

Max

Unit

50
50

V
V
V
nA
nA

160
150
5

50
,60
50

100

240
0.2
0.5
1
1
300

V
V
V
V
MHz

6

pF

8

dB

" Pulse Test: Pulse Widths300j./s, Duty Cycles2%

ciS

SAMSUNG SEMICONDUCTOR

455

2N5401

PNP EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

BAsE-EMITTER ON VOLTAGE
1DOC

1000

500

500 I-- I-Vce_5V

300

-

-Vee.5V

300

J

~

"

to;

w 100

II:

B
!i

i

50
30

10
3

5

30 50

10

10f)

300 500 1000

0.2

0.4

0.6

0.8

1.0

1.2

VeE (V). IlASE-eMITTER VOI.TAGE

Ie (mA), COLLECTOR CURRENT

BASE-EMITTER-sATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT
10

1000

r-- r-Vce-1OV

I-- -1e·101.

!'-,.

Jl(aal)

1==

r-

/'
1==

Vee (sal)

0D1

3

5

10

30 50

300 500 1000

100

Ie (mA). COLLECTOR CURRENT

3

5

10

30 50

100

300 500

1000

Ie (mA). COLLECTOR CURRENT

o.UTPUT CAPACITANCE
214

-

,.JM.J.
IE-=O

20

r\.
'\

1"'-

".

"'-... .......

10

30

50

100

Vea (V). COLLECTOR BASE VOI.TAGE

c8

SAMSUNG SEMICONDUCTOR

456

NPN EPITAXIAL SILICON TRANSISTOR

2N5550
AMPLIFIER TRANSISTOR
• Coliector·Emitter Voltage: VCI!O =140V
• Collector Dissipation: Pc (max)=625mW

TO·92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector·Base Voltage
Colle~o(·Emitter Voltage
Emitter·Base Voltage
Collector Cu rrent
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

Vcso
VCEO
VE80
Ic
Pc
Tj
Tstg

160
140
6
600
625
150
-55-150

V
V
V
mA
mW
°C
°C

• Refer to 2N5551 for graphs

1. Emitter 2. Base 3 Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Coliector·Base Breakdown Voltage
-Coliector·Emitter Saturation Voltage
Emitter·Base Breakdown Voltage
Collector Cut·off Current
Emitter Cut·off Current
-DC Current Gain

Symbol
BVcso
BVcEo
BVEso
leso
IEso
hFE

- Coliector·Emitter Saturation Voltage

VeE (sat)

-Base-Emitter Saturation Voltage

VSE (sat)

Current Gain Bandwidth Product

h

Output Capacitance

Cob

Noise Figure

NF

Test Conditions
Ic =100pA,IE=0
le=1mA,ls=0
IE =10pA, Ic =0
Vcs =100V,IE=0
VSE =4V, Ie =0
le=1mA, VCE=5V
Ic=10mA, VeE =5V
Ic=50mA, VcE =5V
le=10mA,ls=1mA
Ie =50mA, Is =5mA
le=10mA,ls=1mA
Ie =50mA, Is =5mA
Ic =10mA, VCE=1OV
f=100MHz
Vcs =10V,IE=0
f=1MHz
Ie = 250pA, VCE=5V
Rs=1KO
f=10Hz to 15.7KHz

Min

Typ

Max

160
140
6
100
50

Unit'
V
V
V
nA
nA

60

60

250

20

100

0.15
0.25
1
1.2
300

V
V
V
V
MHz

6

pF

10

dB

- Pulse. Test: Pulse Width$3QO/ols, Duty Cycle:s2%

c8

SAMSUNG SEMICONDUCTOR

457

NPN EPITAXIAL SILICON TRANSISTOR

2N5551
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: V CEO =16"" '
• Collector Dissipation: Pc!max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Veeo
Veeo
Veeo
Ie
Pc
Tj
Tstg

180
160
6
600
625
150
-55-150

COlleCtor-Base VoI~ge
Collector-Emi,tter, Voltage
Emitter-Base Voltage
Col,lector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Unit
V

V
V.
mA
mW
°C
°C

1, Emitter 2. Sase 3. Collecfor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
, Characteristic
Collector-Base Breakdown Voltage
·Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
·DC Current Gain

.

Symbol
BVceo
BVcEO
BVeeo
Iceo
leeo
hFe

·Collector-Emitter Saturation Voltage

Vce (sat)

·Base-Emitter Saturation Voltage

Vee (sat)

Current Gain Bandwidth Proouct

fr

Output CapaCitance

Cob

NOise Figure

NF'

~Pulse

c8

Test Conditions

Min

Ic =100pA, Ie =0 .
Ic=lmA,'le=O
Ie =10pA, Ic =0
Vce = 120V, Ie =0
Vee =4V, Ic =0
Ic=lmA, Vce=5V
Ic=10mA, Vce=5V
' Ie ,;,50mA, Vce =5V
le=10mA,le=lmA
Ic =50mA, Ie =5mA
Ie =10mA, Ie =lmA
Ie =50mA, Ie =5mA
Ic =10mA, Vce =10V
f=I00MHz
Vee=10V"le=0
f=IMHz
Ie =250pA, Vee =5V
Rs=IKO
f=10Hz to 15.7KHz

180
160
6

Typ

-Max

50
50
80
80

Unit
V
V
V
nA
nA

250

30

100

0.15
0.2
1
1
300

V
V
V

V
MHz

6

pF

8

dB

Test: Pulse Widths300I'S, Duty Cycles2%

SAMSUNG SEMICONDUCTOR

458

2N5551

NPN EPITAXIAL SILICON TRANSISTOR
,DC CURRENT GAIN

BASE-EMITTER ON VOLTAGE

1~

1~

f--- VCE=5V

r-- t-Vce-5V

500

300

300

I

i!!

<§

.........

100

I

H 30

i

I

10

I

I

3

5

10

30 50

100

300

1000

':.

a4

0.2

0.6

OB

1.0

1.2

V.. M. BASE-EMlnER VOLTAGE

Ie (mA), COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT

1000

•

10

-

VCE-1OV

f--

~

t"-.

Ic=101s

J1L,)

'F=:

V

fit
e.(oBI)

f--

om
3

5

10

30 50

100

300 500 1000

Ie (mA). COLLECTOR CURRENT

3

5

10

30 50

100

300 500

1000

Ie (mA). COLLECIOR CURRENT

OUTPUTCA~TANCE

12If---

-

..

fob.

1• ..0

10

I\.

"

I

r--....

r-. ...

oI
1

10
Vea M. COLLEC1OR _

c8

30

fOO

VOL'WIE

SAMSUNG SEMICONDUCTOR

459

2N6427

SILICON· DARLINGTON TRANSISTOR··

DARLINGTON TRANSISTOR
TO-92

• Collector-EmiHerVoltage: Vceo =40V
• Collector Dissipation: Pc (max)=625mW

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCEO
VCBO
VeBo
Ic
Pc
Tj
Tstg

Rating

40
40
12
500
625
150
-55-150

Unit
V
V
V
mA
mW
°C
°C·
1. Emitter 2. Base 3. Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
. Symbol

Characteristic
'Collector-Emitter Breakdown Voltage
Collector-Base Breakdowl'l Voltage
Emitter-Base Breakdown yeltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
'DC Current Gain
..

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
. Output Capacitance
Noise Figure

BVceo
BVcBo
BVeBO
ICBO
ICEO
leBO
hFe

Vce (sat)
. VBe (sat)
VBe(on)
Cob
NF

.

. Test Conditions
Ic=10mA,IB=0
Ic=100pA,le=0
Ie =10pA, Ic =0
VcB =30V, le=O
Vce =25V,IB=0
VBe =1OV, Ic =0
Ic=10mA, Vce=5V
Ic=100mA, Vce=5V
Ic =500mA, Vce =5V
Ic=.50mA,IB=O.5mA
Ic =500mA, ·IB =0.5mA
Ic=.500mA,IB=O.5mA
Ic=50mA, Vce=5V
VCB=10V,le=0
f=1MHz
Ic=1mA, Vce=5V
Rs=100KO .
f=10KHz to 15.7 KHz

Min

lYP

Max

..

40
40
12

50
.1

Unit
V
V
V
nA

",A
nA

0.71
0.9
1.52
1.24
5.4

50
100K
200K
140K
1.2
1.5
2
1.75
7

3

10

·dB

10K
20K
14K

V
V
V
V
pF

'Pulse Test: Pulse Width:s 3001'8, Duty Cycle:s 2%

c8

SAMSUNG

SEMIC~NDUCTOR

.460

NPN EPITAXIAL
SILICON DARLINGTON TRANSISTOR

2N6427
DC CURRENT GAIN

CURRENT GAIN·BANDWIDTH PRODUCT

1000~~m

1000K

500K
300K

I-- c-- Vce -

15OO~_5V

5V
I
I

I:

-

.. 300 f----j--+--+-t+1e+++---+--++-+'-l+++l

S

1'00gmJ~m
I:

/';

I---t--t-+H+ttt----t---+-++-+++tl

(

3K

~

lK
3

5

10

30 50

100

300 500 1000

Ie (mA). COUEc:TOR CURRENT

I. (....). CCl.LECI'OR CUIlIIENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

BASE-EMITTER ON VOLTAGE

10

100

--

VBE(aa1)
VeE(,",)

=F=L.L

~

,

1

I

I

f-f-

r- -

0

I

0.1
10

30

50

100

300

Ie (mA). CCl.LECI'OR CURRENT

c8

II

200

1c-1000}B

1

10 '-------'........J......LL..Ll--Ll..!._--L-.J....-LJ.---'--L.LJJ
3
5
1
10
30
50
100

SAMSUNG SEMICONDUCTOR

o

0.2

D.6

1.0

1A

1.8

2.2

2.6

""E (V). BASE·EMITTER VCLTAGE

461

NPN EPh"AXIAL SILICON TRANSISTOR

2N6428
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCEO =50V
• Collector Dissipation: Pc (max)=625mW

10-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature .

Symbol

Rating

Unit

VC80
VCEO
VEeo
Ic
Pc
Tj
Tstg'

60
50
6
200 '
625
150
-55-150

V
V
V
mA
mW

OC
°C

• Refer to 2N5088 for graphs
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current,Gain

Collector-Emitter Saturation Voltage

Symbol
BVC80
BVCEO
Iceo
ICEo
IEeo
hFE

VCE (sat)

•
Base£mitter On Voltage

VeE (on)

Current Gain Bandwidth Product

fr

Output Capacitance

Cob

Noise Figure/Noise VOltage Level

NF/Nv

c8

SAMSUNG SEMICONDUCTOR,

Test Conditions
Ic =100pA, IE =0
Ic~1mA, le=O
Vce=30V,IE=O
Vc~=30V, le=O
VeE =5V,lc=0
Ic =10pA, VcE =5V
Ic =100pA, VcE =5V
Ic=1mA, VcE =5V
Ic=10mA, Vce=5V
Ic=10mA, 1s=0.5mA
Ic=100mA,le=5mA
Ic=1mA, VcE =5V
Ic=1mA, VcE =5V
f=100MHz
Vce =10V, IE =0
f=1MHz
Ic =100pA, VcE =5V '
(1) Rs =10KO, BW=1Hz
f=100Hz
(2) Rs =.50KO, BW=15.7KHz
f=10Hz-10KHz
(3) Rs =5000, BW=1Hz
f=10Hz

Min

lYP

Max

60
50
10
25
10
250
250
250
250

0.56
100

Unit
V
V
nA
nA
nA

650

0.2
0.6
0.66
700

3

V'
V
V
MHz
pF

3/18.1

dB/nV

6/5.7

dB/p.V

3.514.3

dBlnV

462

2N6428A

. NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR

I

• Collector-EmiU,r Voltage: VCEO =50V
• Collector Dissipation: Pc (max)=625mW

TO-92

=

.ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
TJ
Tstg

60
50
6
200
625
150
-55-150

V
V
V
mA
mW

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

°C
°C

••

• Refer to 2N5088 for graphs
1. 'EmItter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

Symbol
BVcBo
BVcEo
ICBO
ICED
lEBO
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter On Voltage
Current Gain Bandwidth Product

VBE (on)

Output Capacitance

Cob

Noise Figure/Noise vOltage Level

NF/Nv

c8

h

SAMSUNG SEMICONDUCTOR

Test Conditions

Min

Ic =100,A, IE =0
60
Ic=1mA,IB=0
50
VcB =30V,IE=0
VcE =30V,IB=0
VBE =5V,lc =0
250
Ic =10,A, VCE =5V
250
Ic =100,A, VcE =5V
250
Ic=1mA, VcE =5V
250
Ic =10mA, VcE =5V
Ic =10mA, IB =O.5mA
Ic =100mA,IB=5mA
0.56
Ic=1mA, VcE =5V
100
Ic=1mA, VcE =5V
f=100MHz
Vcs=1OV,IE=0
f=1MHz
Ic =100,A, VcE =5V
(1) Rs":1OKO,. BW=1Hz
f=100Hz
(2) Rs =50KO, BW=15.7KHz
f=10Hz-10KHz
(3) Rs =500, BW=1Hz
f=10Hz

Typ

Max

10
25
10

Unit
V
V
nA
nA
nA

650

0.2
0.6
0.66
700
3

V
V
V
MHi
pF

2/16.2

dB/nV

4/4.6

dBltN

3/4.1

dB/nV

463

2N6515

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR
TO-92

• Collector-Emitter Voltage: VCEO = 250V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
COllector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEeo
Ic
Pc

250
250
6
500
625
150
-55-150

V
V
V
mA

,

TJ
Tstg

rrtN
°C
°C

1. Emitter 2. Sase 3. Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

',Collector-Emitter Breakdown Voltage

BVceO

Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
'DC Current Gain

BVCBO
BVEeo
ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage

VeE (sat)

Base-Emitter Saturation Voltage

VeE (sat)

Collector-Base Capacitance
'Current Gain Bandwidth Product
Base Emitter On Voltage

,Ccb

h
'VBE (on)

' Test Conditions

Min

Ic=lmA,le=O
Ic =lOOpA, IE =0
IE=10pA,lc=0
Vce=15OV,IE=0
VeE =5V, Ic ",,0
Ic=lmA, VcE =10V
Ic =10mA, VCE =10V
'lc=30mA, VCE=10V
le=50!1lA, VeE=10V
Ie =loomA, VCE =10V
le=10mA,le=lmA
Ie =20mA, Ie =2mA
Ic =30mA,le=3mA
Ic =50mA,le=5mA' .
Ie =10mA, Ie =lmA
Ic =20mA, Ie =,2mA
Ic =30mA, Ie =3mA
Vee =20V,IE=0
f=lMHz
Ic =10mA, VcE =20V
f=20MHz
Ic =lOOmA, VCE =10V

Typ

Max

Unit

250

V

250
6

V
V
nA
nA

50
50
35
50
50

45

300
220

25
0.3
0.35
0.5
1
0.75
0.85
0.9

'

6
40

200
2

V
V
V
V
V
V
V
pF
MHz
V

• Pulse Test: Pulse Width ~ 3OO/lS, Duty Cycle ~ 2%

c8

SAMSUNG SEMICONDUCTOR

464

NPN EPITAXIAL .SILICON TRANSISTOR

2N6515

CURRENT GAIN BANDWIDTH PRODUCT

DC CURRENT GAIN

-

1000

1000

500 I---VCE-1011

f----Vce-2OII

300

2N~1~N6S16

I-------~.

~ 2N6S17
"

t---

1\

5

,
1

3510

1

30501(1)

10

30

50

Ie (mA), COt.I.EC1'OII CURRENT

Ie (mA), CCIU.ECTOR CURRENT

COLLECTOR EMITTER SATURATION VOLTAGE
BASE EMITTER SATURATION VOLTAGE

COLLECTOR-BASE CAPACITANCE

I !

1.2

f---

I

12

lel'lJIB

100

f--

IE~O I I
f_1MHz

10

f - - f-

VBE(sa1)

L.---- +-

'"

I"............

-

Ve<;(sa1)

I I
.

1

3

5

10

-

j.-30

SO

100

10

30

50

100

200

Ie (mAl, COUECIOfI CURRENT

ciS SAMSUNG SEMICONDUCTOR

465

'2N6516-",

NPN -EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISOTR

TO-92

• Collector-Emitter Voltage: VCEO =30OV
• Collector Dlsslpatioh: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta ='25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature:
,:,.'

,

"

Symbol

Rating

Unit

Vceo
Veeo
VEBO
Ic
Pc
TJ
Tstg

300
300
6

V
V
V
mA
mW

500
625
150
-55-:150

"C
"C
1. Emitter 2. Sase 3. Collecfor

• Refer to 2N6515 for graphs '

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

, Collector-Emitter Breakdown Voltage
Coliector·Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
'DC Current Gain

Collector-Emitter Saturation Voltage

BVeeo
BVcBO
BVEBO
ICBO
lEBO
hFE

Vee (sat)

Base-Emitter Saturation Voltage

VeE (sat)

Collect-Base Capacitance

Ccb

'Current Gain Bandwidth Product
Base Emitter On Voltage

h
VeE (on)

Test ConC\itlons
Ic=1mA,18=0
Ic .. 1oopA,IE=0
IE=10pA,lc=0
Vce=200v,IE=0
VEe=5V,lc=0
Ic=1mA, VcE =1OV
Ic=10mA, VCE=1OV
Ic=30mA, VcE =1OV
Ic=50mA, VcE =1OV
Ic=1oomA, VcE =1OV
Ic=10mA,le=1mA
1c=20mA,le=2mA
Ic=30mA,le=3mA
Ic=50mA,le=5mA
Ic=10mA,le=1mA
. Ic=20mA, le=2mA
Ic =30mA, Ie =3mA
Vca=2OV,I E=0 '
f=1MHz
Ic=10mA, VcE =2OV
f=20MHz
,Ic =100mA, Vee =1OV

. Min

lYP

Max

300

300
6
50
50

Unit
V
V
V
nA
nA

30
45
45
40
20

40

270
200
0.3
0.35
0.5
1
0·75
0.85
0.9
6

pF

200

MHz

2

V

V
V
V

V

, Pulse Test: Pulse Width=:;;300/lS, Duty Cycle=:;; 2%

c8

SAMSUNG

SEM,coND~croR

466

2N6517

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISOTR
• COliecto....Emitter Voltage: VeE-O =35OV
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta ::=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol.
VCBO
Vceo
Ve:O
Ic
Pc
Tj
Tstg

Rating

Unit

350
350
6
500
625
150
-55-150

V
V
V
mA
mW
°C
°C

•

• Refer to 2N6515 for graphs
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
• Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-Off Current
• DC Current Gain

S'ymbol
BVcEO
BVcBO
BVeBO
ICBO
leBO
hFe·

Collector-Emitter Saturation Voltage

Vee (sat)

Base-Emitter Saturation Voltage

VBe (sat)

Collect-Base Capacitance

Ccb

'Current Gain Bandwidth Product
Base Emitter On Voltage

h·
VBe (on)

Test Conditions

Min

Ic=1mA,IB=0
Ic = 100pA, Ie =0
Ie =10pA, Ic =0
VcB =25OV,le=0
VeB =5V,lc =0
Ic=1mA, Vce=10V
le=10mA, Vce=1OV
Ie =30mA, Vce =1OV
le=50mA, Vce=1OV
le=100mA, Vce=10V
le=10mA,IB=1mA
le=20mA,IB=2mA
Ie =30mA, IB =3mA
Ie =50mA, IB =5mA
Ic =10mA, 18 =1mA
Ie =20mA, Is =2mA
Ic =30mA, IB =3mA
Vcs=2OV,le=0
f=1MHz
le=10mA, Vce=2OV
f=20MHz
Ic=100mA, Vce=10V

350
350
6

lYP

Max

50

50
20
30
30
20
15

V
V
V
nA
nA

200
200
0.3
0.35
0.5
1
0.75
0.85
0.9

tl

40

Unit

200
2

V
V
V
V
V
V
V
pF

I

MHz
V

• Pulse Test: Poise Width 5; 300Idl, Duty Cycle 5;2%

c8

SAMSUNG SEMICONDUcToR

467

2N8518

PHP EPITAXIAL. SILICON TRANSISTOR

HIGH 'VOLTAGE TRANSISTO.R
ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-sase Voltage
.ColifilCtor Current
Base Current
Collector Dissipation
Derate.above 25°C
Junction Temperature
Storage Temperature

VCBO
VCEo
VEBO
Ic
Ie
Pc
Tj
Tstg

Rating

Unit

-250
-250
-5
-500
"':250
0.625
5
190
-55"'150

V
V
V
mA
mA
W
mW/oC
°C
°C
1. Emitter 2. Base 3. ·Collector

• Refer to 2N6520 for graphs

ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
Characteristic
Collector Base Breakdown Voltag
• Collect.or Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
COllector Cutoff Current
Emitter Cutoff Current
• DC Current Gain

Collector-Emitter· Saturation Voltage

. Symbol

Test Condition

Min

BVceo

Ic=-100jAA,IE=0
Ic=-1mA,le=0
IE=-10jAA,. Ic=O .
VCB= -150V, IE=O
VEB=-4V, Ic=.o
VcE =-10V,lc=-1mA
VcE =-tOV,lc=-10mA
VcE'=-10V,lc=-30mA
VcE =-10V,lc=-50mA
VCE=-10V,lc=-100rriA
Ic =-10mA,IB=-1mA
Ic=-20mA,IB=-;-2mA
Ic=-30Il)A, IB=-3mA
Ic=-50mA, IB=-5mA
Ic=-10mA, IB=-1mA
Ic=-20mA, IB=-2mA
Ic=-30mA, IB=-3mA
VCE=-10V, Ic=-100mA
VCE=-20V, Ic=-10mA, f=20MHz
VCB=-20V; IE=O, f"'1MHz
VEB =-0.5V, Ic=O, f=1MHz

-250
-250
-5

BVCEO

BVEBO
ICBO
lEBO
hFE

VCE (sat)

:

Base-Emitter Saturation Voltage

VBE (sat)

;

Base Emitter On Voltage
• Current Gain BandWidth Product
Collector Base Capacitance
Emitter Base CapaCitance

VBE (on)

fr
Ccb
Ceb

Turn On Time

ton

Tum Off TIme

toff

• Pulse Test:

c8

PW~300/AS,

Duty

VBE (off)=-2V, Vcc=-100V
Ic=-50mA, IB1 =-10mA
Vcc=-100V, ic=-50mA
IB1 =IB2=-10mA

Max

-50
-50
35
50
.50,
45
25

40

Unit
V
V
V
nA
nA

300
220
-0.30
-0.35
-0.50
-1
-0.75
-0.85
:"'0.90
-2
200
6
100

.

V
V
V
V
V
V
V
V
MHz
pF
pF

200

ns

3.5

ns

Cycle~2%

SAMSUNG SEMICONDUCTOR

468

2N6519

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Rating

Unit

-300
-300
-5
-500
-250
0.625
5
150
-55"'150

V
V
V
mA
mA
W
mW/oC
°C
°C

Symbol

· Collector-Base Volt!lge
Collector-Emitter Voltage
Emitter-Base Voltage
Collector CUrrl;mt
Base Current
Collector Dissipation
Derate above 25°C
Junction Temperature
Storage Temperature

VCBO
VCEO
VEeo
Ic
Ie
Pc
Tj
Tstg

1. Emitter 2. Base 3

• Refer to 2N6520 for graphs

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector Base Breakdown Voltag
• Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain

BVCBO
. BVcEo
BVEeo
ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VeE (sat)

Base Emitter On Voltage
• Currel1t Gain Bandwidth Product·
Collector Base Capacitance
Emitter Base Capacitance

VeE (on)

fr
Ccb
Ceb

Turn On Time

ton

Turn Off Time

toff

• Pulse Test:

c8

PW~300,..s,

Duty

Test Condition
Ic= -1 OO,..A, IE=O
Ic=-1mA, le=O
1~=-1 O,..A, Ic=O
. Vce=-200V, IE=O
. VEe=-4V, Ic=O
VcE =-10V,lc=-1mA
VCE =-10V,lc=-10mA
VCE= -1 OV, Ic= -30mA
VCE =-10V,lc=-50mA
VCE=-lOV,lc=-100mA
ic=-10mA,le=-1mA
Ic =-20mA, le=-2mA
Ic= -30mA, le= -3mA
Ic =-50mA, le=-5mA
Ic=-10mA,ls=-1mA
Ic=-20mA, le=-2mA
Ic= -30mA, Is= -3mA
VCE=-10V,lc =-100mA
VcE =-20V, l c=-10mA, f=20MHz
Vce=-20V, IE=O, f=1MHz
VEB=-0.5V, Ic=O, f=1MHz
VBE (Off)=-2V, Vcc =-100V
Ic =-50mA,le1=-10mA
Vcc=-100V,lc =-50mA
le1=le2 =-10mA

Min

Max

--300
-300
-5
-50
-50
30
45
45
40
20

40

Unit
V
V
V
nA
nA

270
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100

V
V
V
V
V
V
V
V
MHz
pF
pF

200

ns

3.5

ns

Cycle~2%

SAMSUNG SEMICONDUCTOR

469

,

3N6520

PNP EPITAXIAL SILICON TRANSISTOR.

HIGH VOLTAGE TRANSISTOR
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Coliector·Base Voltage
Coliector·Emitter Voltage
Emitter·Base Voltage
Collector Current
Base Current
Collector Dissipation
Derate above 25°C
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Ie
Pc
Tj
Tstg

Rating

Unit

-350
-350
-5
-500
-250
0.625
5
150
-55"'150

V
V
V
rnA
rnA
W
mW/oC
°C
°C
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector Base Breakdown Voltag
• Collector Emitter Breakdown Voltage
Emitter sase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain

Collector-Emitter Saturation Voltage

BVceo
BVoEo
BVeBO
lceo
leBO
hFE

Vee (sat)

Base-Emitter Saturation Voltage

Vee (sat)

Base Emitter On Voltage
• Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance

Vee (on)

h
Ceb
Ceb

Tum On Time

ton

Tum Off TIme

toft

• Pulse Test:

C8

PW~3001A8,

Test Condition

Min

Ic=-100/lA, le=O
Ic=-lmA, le=O
le=-10/lA, 10=0
Vca=-250V, le=O
Vea=-4V, 10=0
Vce =-10V,lc=-lmA
Vce =-10V,lc =-10mA
Vce =-10V, le;=-30mA
Vee=-10V, 1c=-50mA.
Vce =-10V, le=-fOOmA
1c=-10mA,le=-lmA
le=-20mA,le=-2mA
Ic=-30mA, le=-3mA
Ic=-50mA, le=-5mA
Ic=-'-10mA,le=-lmA
Ic=-20mA,le=-2mA
le= -30mA, le= -3mA
Vce =-10V,le=-100mA
Vce= -20V, le= -lOrnA, f=20MHz
Vee =-20V, le=O, f=lMHz
Vea=-0.5V,Ic=O, f=lMHz

-350
-350
-5
-50
-50
20
30
30
20
15

..

Vee (off)=-:2V, Vce =-100V
Ic,=-50mA, le1 =-1 OmA·
V'cc=-100V,le=-50mA
le1 =le2=-10mA

Max

40

Unit
V
V
V
nA
nA

200
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100

V

y
V
V
V
V
V
V
MHz
pF
pF

200

ns

3.5

ns

Duty CycleS2%

SAMSUNG SEMICONDUCTOR

470

2N6520

PNP EPITAXIAL SILICON TRANSiSToR
BASE EMITTER SATURATION VOLTAGE
COLLECTOR - EMITTER SATURATION VOLTAGE

DC CURRENT GAIN
'DO0

V
500

--

-10000

20V

lc-lO'IB

-5000

~

300

~ 100

I:
1.10

,
-t

-3

5

10

30

100

-2000

1

BE sat)

-500

-200

t

500

-'DO

~

- 50

J

- 20
- 10 _1 _2

5A-10A

1A

-5 -10 -20 -50 -100-200 -500-1A -2A -5A -lOA
lc:lmA~ COLLECTOR CURRENT

IdmA~ COLLECTOR CURRENT

3_0

300
200

td@VBE(O )

"-

2.0V V""

(o\.)~ I, bo~
5_0
Tj=25°C
~11s

::..

~

2.5

Il;

'-5

L.U

~

0

25°C to 125°C

()

"

30

W
II:

'-0

.

0_5 RaVB tor VeE

~
II:
w
IE

~
55°C to 2 5"C

I!!

6- 0 .5
~-1 a

0

a: -1.5

-5r~'O
Ravc for VeE (sat)

-2.0 -3.0.-5.0

-10

-20

..
-30

-50-100

-2.5
-1.0

2.0

50

10

-20

-30 -50 -100

CURRENT GAIN-BANDWIDTH PRODUCT

TURN-OFF TIME

1.0K

3.0

lc(mA), COLLECTOR CURRENT

lc:lmM COLLECTOR CURRENT

2_OK

12rt

I

-20

'0
-1.0

•

TEMPERATURE COEFFICIENTS

TURN-ON TIME
, OK

700
500

M/):

-1000

I

--\

g

CE

II

1000

_~-20V

Is

700
500 1---1--1I-'''''''++-I-+++H-_Vce (off)= -'OOV
'"
1cI1s=5_0
ia1=1B2
lj=2S'oC

w

IE
1= 200

!

0

300
0

100

1/

70

7'

50

~"L.0--~--2~_-0----~3~~-~5~.0~-~'O-----2~0~--~--3~0~-~5~O~_IlI,OO
IdmM COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR.

'0

-,

-2
lc:lmA~

-5

-'0

'-20

-50 -80

COLLECTOR CURRENT

471

,t'" ,,'

~,,'

2H6520

. PNP ·EPITAXIAL SILICON. TRANSiSToR
C~PACITANCE

100

f-"f 1MHz

0

rc.
0

.........

" I'

Cob

2

0
01 0.2

05

1

2

5

10

20

50

100

VcoIVI. COI.I..ECTOIHIA VOLTAGE

c8

-

SAMSUNG SEMICONDUCTOR

,-.'

472

PNP EPITAXI~L SILICON TRANSISTOR

BCW29

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

30
20
5.0
100
350
150

V
V
V
mA
mW
·C

• Refer to MMBT5086 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output CapaCitance

BVcBO
BVcEo
BVcEs
BVEBO
ICBO
hFE
VCE (sat)
VBE (on)

30
20
30
5

Cob

Noise Figure

NF

Ic=10l-'A. IE=O
Ic=2.0mA, IB=O
Ic=lOOl-'A, YEB=O
IE= lOl-'A,lc=O
VcB =20V, IE=O
VcE =5V, Ic=2.0mA
Ic=10mA,IB=0.5mA
Ic=2.0mA, VcE =5V
VcB =·10V, IE=O
f=lMHz
Ic=0.2mA, VCE=5V
f=lKHz, Rs=2KO

120
0.6

Max

100
260
0.3
0.75

Unit
V
V
V
.V
nA

7

V
V
pF

10

dB

Marking

c8

SAMSUNG SEMICONDUCTOR

473

•

BCW30

PNP, EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
SOT-23 '

ABSOLUTE MAxIMUM RATINGS (Ta :;:25°C).
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
Vceo
VeBO
Ic
Pc,
Tstg

Rating

Unit

30
20
5.0
100
350
150

V
V
V
mA
mW
DC

,.,,'

• Refer to MMBT5086 for graphs

1. Base 2, Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C),
Characteristic

Sy'mbol

Test Condition

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current "
DC Current Gain
Coliector-EllJitter Saturation Voltage
. Base-Emitter On Voltage
Output Capacitance

BVcBO
BVceo
BVcES
BVEBO
IcBO
hFE
VCE (sat)
VSE (on)
COb,

Ic= 1 O,..A, le=O
Ic=2.0mA, Is=O
I~= 1 OO,..A, VeB=O
Ie':" 1 O,..A, Ic=O
VcB =20V, le=O
VcE=5V, Ic=2.0mA
Ic=10mA,ls=0.5mA
Ic=2.0mA, Vce=5V
Vce =10V,IE=0
f=1MHz
Ic=0.2mA, VcE =5V
f= 1 KHz, Rs=2KO

Noise Figure

NF

Min

Max

Unit

30 .

V

20
30
5

V
100
500
0.3
0.75
'7

215
0.6

10

V
V
nA
V
V
pF
dB

Marking

c8

SAMSUNG SEMICONDUcroR

474

NPN EPITAXIAL SILICON' TRANSISTOR

BCW31

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base \(oltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage. Temperature

Symbol
VCBO
VCEO
VEBO
Ie
Pc
Tstg

Rating

Unit

30
20
5
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBT5088 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance

BVcBO
BVcEo
BVEBO
hFE
VCE (sat)
VBE (on)
Cob

30
20
5
110

Noise Figure

NF

Ic= 1OIolA. 1.,=:0
Ic=2mA. la=O
IE= 1OIolA,lc=0
VcE =5V, Ic=2.0mA
Ic= 1OmA, IB=0.5mA
Ic=2mA, VcE =5V
VcB =10V,IE=0
f=1.0MHz
Ic=0.2mA, VcE =5V
Rs=2KO, f=1KHz

0.55

Max

Unit
V
V
V

220
0.25
0.7 .

4

V
V
pF

10

dB

Marking

.c8

SAMSUNG

SEMICONDUcr~R

475

•

BCW32

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
80T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C),,·
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ie
Pc
Tstg

,

Rating

Unit

'30
20
5
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBT5088 for graphs

1 Base 2. Emitter 3. Collector

'"

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC' Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output ~apacitance

BVCBO
BVcEo
BVEBO
hFE
VCE (sat)
VBE (on)
Cob

30
20
5
200

Noise Figure

NF

Ic=10,..A, IE=O
Ic=2mA, la=O
IE= 1 O,..A, Ic=O
VcE=5V, Ic=2.0mA
Ic =10mA,la=0,5mA
le=2mA, VcE =5V
Vca= 1 OV, IE=O
f=1.0MHz
Ic =0,2mA, VeE =5V
Rs=2KO, f=1KHz

.0.55

Max

Unit
V
V
V

450
0,25
4

V
V
pF

10

dB

0.7

Marking

..

c8
\

SAMSUNG SEMICONDUCfOR

~

476

BCW33

NPN EPITAXIAL SIUCON TRANSISTOR

GENERAL. PURPOSE TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
. Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

30
20
5
100
350
150

V
V
V
mA
mW
·C

• Refer to MMBT 5088 for graphs

1. Base? 'Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Test Condition

.Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
. Base-Emitter On Voltage
Output Capacitance

BVcBO
BVcEo
BVEBo
hFE
VCE (sat)
VBE (on)
Cob

Ic=10,..A.IE=0
Ic=2mA, IB=O
IE=10lJA, Ic=O
VcE =5V, Ic=2.0mA
Ic= 1 OmA, IB=0.5mA
Ic=2mA, VcE =5V
VcB =10V,IE=0 .
f=1.0MHz
Ic=0.2mA, VcE =5V
Rs=2KO, f=1KHz

30
20
5
420

Noise Figure

NF

0.55

Max

Unit
V
V
V

800
0.25
0.7
4

V
V
pF

10

dB

Marking

c8

SAMSUNG SEMICONDUCTOR

477

•

BCW60A'

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
.80T-23

.

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol

Rating
32
32
5
100
350
150

VCBO
VCEO
VEBO
Ic
Pc
Tstg

. Unit
V'
V
V
mA
mW
°C

• Refer to MMBT3904 for graphs

1. Base 2. Emitter 3. Collector .

. ELECTRICAL CHARACTERISTICS (Ta =2S 0C)
Characteristic

Test Condition

Symbol

Collector-Emitter Breakdown Voltage
Emitter-Base BreakdOWn Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

BVcEo
BVEBo

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VBE (sat)

Base-Emitter On Voltage
Current Gain-Bandwidth Product

fr

Output CapaCitance

Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton

lEBO
hF'E

VBE (on)

toff

Ic=2.0mA. IB=O
IE=1.0I-'A. Ic=O
VcE=32V, VBE=O
VEB=4V. Ic=O
VCE=5V. Ic=2.0mA
VCE=5V. Ic=50mA
Ic=50mA.IB=1.25mA
Ic= 1 OmA. IB=0.25mA
Ic=50mA. IA=1.25mA
Ic=50mA. IB=0.25mA
Vc.=5V. Ic=2.0mA
Ic=.1 OmA. VcE =5V
f=1 MHz
VcB =10V.IE=0
f=1.0MHz
Ic=0.2mA. VcE =5V
Rs=2Kil, f=1KHz
Ic=10mA.IB,=1mA
VB8=3.6V. IB2= 1 mA
R,=R, =5KO. RL =9900

Min

Max

32
5
20
20
120
60

0.7
0.6
0.55
125

.

Unit
V
V
nA
nA

220
0.55
0.35
1.05
0.85
0.75

V
V
V
V
V
MHz

4.5

pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUCTOR .

478

BCW60B

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

80T-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VeBO
VeEo
VEBO
Ie
Pc
Tstg

Rating
32
32
5
100
350
, . 150

Unit
V
V,

V.
mA
mW'
°C

• ReIer to MMBT3904 lor graphs
1. Base 2. Emitter 3

Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Curfent
Emitter Cutoff Current
DC Current Gain

Symbol
BVeEo
BVFBe
ICEs
'I EBO
hFE

Collector-Emitter Satur.ation Voltage

VeE (sat)

Base-Emitter Saturation Voltage

VBE (sat)

Base-Em'itter On Voltage,
Current Gain-Bandwidth Product

fr

Output Capacitance

Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton

IIBE (on)

tqff

Test Condition
'e=2.,OmA, 'B=O
IE=1.0,.,A, Ir=O
VeE =32V, VB~=O
VEB =4V, le=O
VeE =5V, le= 1 O,.,A
VrF=5V. Ir=2.0mA
VcE =1V, Ic=50mA
le=50mA" IB= 1.25mA
le= 1 OmA, 'B=0.25mA
ir=50mA,IB=1.25mA
le=50mA, IB=0.25mA
VeE =5V, Ic=2.0mA
Ic=10mA, VcE =5V
1=1 MHz
VeB =10V,IE=0
1=1.0MHz
Ic=0.2mA, VcE =5V
R~=2KO, 1=1KHz
Ic=10mA,IBi=1mA
VBB =3.6V, IB2= 1 mA
RI = R, = 5KO, RL = 9900

Min

Max

Unit

20
20

V·
V
nA
nA

32
5

20
180
70

0.7
0.6
0.55
125

310
0.55
0.35
1.05
0.85
0.75

V
V
V
V
V
MHz

' 4.5

pF

6
150
800

dB'
ns
ns

Marking

c8

SAMSUNG SEMICONDUcroR

479

•

BCW60C

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

80T-23

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

32
32
5
100
350
150

V
V
V
mA
mW

'c

• Refer to MMBT3904 for graphs
1. Base 2. 'Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff' Current
Emitter Cutoff Currfilnt
DC Current Gain .

Symbol
BVcEo
BV,eo
ICEs
lEBO
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VeE (sat)

Base-Emitter On Voltage
Current Gain-Bandwidth Product

fr

Output CapaCitance

Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton
toff

V~E

(on)

Test Condition
Ic=2.0mA, le=;O
IE=1.0/lA,lr=0
VCE=32V. VBE=O
VEe =4V, Ic=U
VcE =5V,lc=10/lA
V-r=5V. Ic=2.0mA
VcE =1V, Ic=50mA'
Ic=50mA, le=1.25mA
Ic=10mA,le=0.25mA
tr;=50mA.I;'=1.25mA
Ic=50mA, le=0.25mA
VCE.=5V, Ic=2.0mA
Ir=10mA, VcE =5V
f=1MHz
Vce=.10V, IE=O
f=1.0MHz
Ic=0.2mA, VcE =5V
Rs=2KO, f=1KHz
Ic =10mA,le,=1mA
Vee=3.6V, le2= 1 mA
R,=R,=5KO, RL =9900

Min

Max

32
'5
20
20
40
260
90

0.7
0.6
0.55
125

Unit
V
V
nA
nA

460
.0.55
0.35
1.05
0.85
0.75

V
V
V
V
V
MHz

4.5

pF

6

dB

150
800

ns
ns

Marking

C

SAMSUNG SEMICONDUcroR

480

BCW60D

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol

Rating

Unit

Vcao
VCEO
VEao
Ic
Pc
Tstg.

32
32
5
.100
350

V
V
V
mA
mW
°C

1bO

• Refer to MMBT3904 for graphs

II

t. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
. Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Symbol
BVcEo
RV,RO
ICES
lEBO
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VBE (sat)

Base-Emitter On Voltage
Current Gain-Bandwidth Product

Val (on)

Output Capacitance

Cob

NOise Figure

NF

Turn On Time
Turn Off Time

1r

'-,n
toff

Test Condition
Ic=2.0mA. la=O
IE=1.0J.lA. 10=0
VcE =32V V8E =0
VEB=4V. Ic=O
VCE=5V. Ic=10J.lA
VCE=5V. Ic=2.0mA
VCE = 1V. Ic=50mA
Ic=50mA, IB=1.25mA
Ic=10mA.IB=0.25mA
I. = ,)OmA. 10= 1 2')mA
Ic=50mA, 1.=0 25mA
VCE=bV, Ic=L.UmA
Ic=10mA. VcE =5V
f=1MHz
Vca= 1 OV. IE=O
f=1.0MHz
Ic=0.2mA. VcE =5V
Rs=2KO. f=1KHz
Ic=10mA.IB,=1mA
Vaa=3.6V. 1§2= 1 mA
R,=R,=5KO. RL =9901l

Min

Max

32
5
20
20
100
380
100

0.7
0.6
0.55
125

Unit
V
V
nA
nA

630
0.55
. 0.35
1.05
0.85
0.75

V
V
V
V
V
MHz

4.5

pF

'6

dB

150
800

ns
ns

Marking

.c8

SAMSUNG SEMiCoNDUCTOR

481

BCW61A

PNP' EPITAXIAL SIl-ICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOl-UTE MAXIMUM RATI~GS (Ta =2S0C)
Characteristic

Symbol

Rating

Unit

~

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base' Voltage
Collector Current
Collector Dissipation
Storage Temperature

VCBO
VCEO
VEBO
Ic'
Pc
Tstg

,32
32
5.0
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBT5086 'for graphs

1. Base 2. EmItter 3. Collector

'ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collecto~ Cutoff Current
DC Current Gain

SymbOl
' BVCEO
BVEBO
ICEs
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VB~ (sat)

Base-Emitter On Voltage.
Output Capacitance

VBE (on)
Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton
toll

Test Condition
Ic=2mA, ,B=:,O
IE= 1fAA, /c=0
VcE ",,32V, VBE=O
VrF =5V, Ic=2mA
VcE =1V, Ic=50mA
Ic=; 1 OmA, IB=0.25mA,
Ic=50mA, IB=1.25mA
Ic=10mA, 'B=0,25mA
Ic=50mA,IB=1.25mA
Ic=21j1A; VrF =5V
VcB =10V, 1.=0
f=1MHz
Ic=0.2mA, VCE=5V
Rs=2KO, f=1 KHz
Ic=10mA,IB1=1mA
IB2= 1 mA, VB8=3.6V
RL =9900

Min

Max

. 32

V

,v

5
120
60

0.6
0.68
0.6

Unit

,20
220

nA

0.25 '
0.55
0.85
1.05
.0.75
6

V
V
V
V
V
pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUCTOR

482

BCW61B

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
V~An

VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

32
32
5.0
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBT5086 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta ='25 ° C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain

Symbol
BVCEO
HVEBO
ICES

hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VeE (sat)

Base-Emitter On Voltage
Output Capacitance

VBE(on)
Cob

Noise Figure

NF

Turn On Time
Turn Off Time

Ion
IQIf

Test Condition
Ic=2mA, le=O
IE=1jJA,lc=0
VcE =32V, VeE=O
VCE=5V,lc=10jJA
VCE=5V. Ic=2mA
VcE =1V, Ic=50mA
Ic= 1OmA,·IB=0.25mA
Ic=50mA, IB=1.25mA
Ic=10mA, IB=0.25mA
Ic=50mA, IB=1.25mA
Ic=2mA, V~F=5V
Vce=10V.IE=0
f=1MHz
Ic=Q.2mA, VcE =5V
Rs =2KO, f=1KHz
Ic=10mA,IB1=1mA
le2=1mA, VBB=3.6V
RL =9900

Min

Max

32

5
20
20
140
80

0.6
0.68
0.6

Unit
V
V
nA

310
0.25
0.55
0.85
1.05
0.75
6

V
V
V
V
V
pF'

6

dB

150
800

ns
.ns

Marking

c8

SAMSUNG SEMICONDUCTOR

483

PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage·
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VI"n.n

-VCEO
v"su

Ic
Pc
Tstg

Rating

Unit

32
32
5.0
100
350
150

V
V
V
mA
mW
·C

• Refer to MMBT5086 for graphs
1. Base 2. Emitter 3. Coilector

ELECTRICAL CHARACTERISTICS. (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Max

Unit
.,

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain

Collector-Emi~er

Saturation Voltage

BVcEo
I::lv"su

IcEs
hFE

VCE (sat)

Base-Emitter Saturation Voltage

VBE (sat).

Base-Emitter On Voltage
Output Capacitance

VBE (on)
Cob

Noise Figure

NF

Turn On Time
Turn Off Time

Ion

, loff

Ic=2mA. IB=O
IE=1/AA, Ic=O
VcE =32V, VBE=O
VcE =5V,lc=10/AA
VrF=5V. Ic=2inA
VcE =1V, Ic=50mA
Ic= 1UmA, 'B=0.25mA
Ic=50mA, IB=1.25mA
Ic= 1 Om A, 'B=0.25mA
Ic=50mA, IB=1.25mA
!c=2mA, VcF =5V
VcB =10V, 'E=O
f=1MHz
Ic=0.2mA, VcE =5V
Rs=2KO, f=1KHz
Ic=10mA,IB,=1mA
IB2= 1 rT]A, VBB=3.6V
RL =9900

32
5

V
V
nA

20
40
250
100

0.6
0.68
.0.6

460
0.25
0.55
0.85
1.05
0.75
6

,

V
V
V
V
V
pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUcro.R

. 484

BCW61D

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
Vmn
VCEO

Vc~

Ic
Pc
Tstg

Rating

Unit

32
32
5.0
100
350
150

V
V
V
mA
mW
·C

• Refer to MMBT5086 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Condition

Min

Max

Unit

I

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain

BVcEo
BVEao
Ices
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VeE (sat)

Base-Emitter On Voltage
Output CapaCitance

Vae (on)
Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton
loff

Ic=2mA, la=O
le=l,..A, Ic=O
VcE =32V, VaE=O
VcE =5V,lc=10,..A
VCF=5V. Ic=2mA
VcE =lV, Ic=50mA
Ic= 10mA, la=0.25mA
'c=50mA, la=1.25mA
Ic=10mA, la=0.25mA
Ic=50mA, la=1.25mA
Ic=2mA, Vc[=5V
Vca=10V. IE=O
f=lMHz 1
Ic=0.2mA, Vce=5V
Rs=2KO,'f=lKHz
Ic= 1 OmA, la1 = 1 mA
la2= 1 mA. Vaa =3.6V
RL =9900

32
5
20
100
380
100

0.6
0.68
0.6

V
V
nA

630
V
V
V
V
·V

0.25
0.55
0.85
1.05
0.75
6

pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUcroR

485

•

BCW69

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

SOT·23

. ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol

'.

VeEo
VEBO
Ie
Pc
Tstg

Rating

Unit

45
5
10.0.
350.
150.

V
V
mA
mW
°C

-. Refer to MMBT5o.86 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic
Collector-Emitter Breakdown Voltage
-Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure

Test Condition

Symbol

BV~EO
BVcEs
BVEBO
ICBO
hFE
VCE (sat)
VBE (on)
Cob·
NF

I le=2.o.mA, IB=o.
I

le= 1 o.o.,..A, VEB=o.
IE= 1 o.,..A, le=o.
VcB =2o.V, IE=o.
VcE =5V, Ic=2.o.mA
Ic= 1 o.mA, IB=O.5mA
Ic=2.o.mA, VcE =5V
VCB = 1 o.V, IE=o.
f=1.o.MHz
Ic=o..2mA, VCE=5.o.V
Rs=2.o.KO, .f=1.o.KHz

Min

Max

45
50.
5
120.
0..6

10.0.
260.
0..3
0..75
7.0.
10.

Unit
V
V
V
nA
V
V
pF
dB

Marking

c8

SAMSUNG SEMICONDUCTOR

486

BCW70

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

S01·23

ABSOI..UTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Emitt\1r Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

45
5
100
350
150

V
V
mA
mW
°C

• Refer to MMBT5086 for graphs

ELECTRICAL CHARACTERISTICS (T a = 25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
. Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance

BVcEO
BVcEs
BVEBO
ICBO
hFE
VCE (sat)
VSE (on)
Cob

Noise Figure

NF

Test Condition
Ic=2.0mA, Is=O
Ic= 1 OO!-,A, VES=O
IE=10!-,A,lc=0
Vcs=20V, IE=O
VcE =5V, Ic=2.0mA
Ic=10mA,'ls=0.5mA
Ic=2.0mA, VcE =5V
Vcs= 1OV, IE=O
f=1.0MHz
Ic=0.2mA, VCE=5.0V
Rs=2.0KO, f=1.0KHz

1. Base 2. Emitter 3. Collector

Min

I

Max

45
50

5
215
0.6

100
500.
0.3
0.75
7.0
10

Unit
V·
V
V
nA
'V
V·
pF
dB

Marking

qs'SAMSUNG SEMICO.NDUCTOR

487

BCW71

NPN EPITAXIA'L SILICON TRANSISTOR

GENER.AL PURPOSE TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VeBo
Vew
VEBO
Ie
Pe
Tstg

Rating

Unit

50
45
5
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBT5088 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25 ° C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Brea~down Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage

BVeBo
BVew
BVeEs
BVEBo .
leBo
hFE
VeE (sat)

le=10f'A, k=O
le=2mA. IB=O
le=2mA, VEB=O
IE= 1Of'A,lc=0
VCB=20V, IE=O
VeE =5V, le=2mA
le=10mA,IB=0.5mA
le=50mA, IB=2.5mA
Ic=50mA, IB=2.5mA
Ic=2mA, VcE =5V
le=10mA, VeE =5V
f=35MHz
VeB =10V, 1,=0
f=1MHz
le=0.2mA, VeE =5V
Rs=2KIl, f=1KHz

50
45
45
5

Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

fr

Output Capacitance

Cob

Noise Ftgure

NF

VB' (sat)
VB' (on)

Typ

Max

100
220
0.25

110
0.21
0.85
0.6

Unit
V
V
V
V
nA
V
V

if
0.75

300

V
MHz

4

pF

10

dB

Marking

c8

SAMSUNG SEMICONDUCTOR'

488

BCW72

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature'

Symbol
Vcso
VCEO
VESO
Ic
Pc
Tstg

Rating

Unit

50
45
5
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBT5088 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25 ° C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage

BVcBo
BVcEo
BVcEs
BV EBO
Icso
hFE
VCE (sat)

Ic=10j./A,IE=0
Ic=2mA. 'B=O
Ic=2mA, VEB=O
IE =10"A,lc=0
VcB =20V, IE "= 0 '
VcE =5V, Ic=2mA
Ic=10mA. IB=0.5mA
Ic=50mA, IB=2.5mA
Ic=50mA, ·IB=2.5mA
Ic=2mA, VcE =5V
Ic=10mA, VcE =5V
f=35MHz
VCB = 1 OV, IE =0
f=1MHz
Ic=0.2mA, VcE =5V
Rs=2KO, f=1KHz

50
45
45
5

Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

VBE (sat)
VBE (on)

fr

Output Capacitance

Cob

Noise Figure

NF

Typ

Max

100
450
0.25

200
0.21
0.85
0.6

0.75
300

Unit
V
V
V
V
nA
V
V
V
V
MHz

4

pF

10

dB

Marking

ciS

SAMSUNG SEMICONDUCTOR-

489

· BCX70G

.. NPNE·PITAxIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta~25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

. Rating

Unit

45
45
5
200
350
150

V
V

'V
mA
mW·
°C

• ReIer to MMBT5088 lor graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 0 C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time

Symbol
BVcEO
BVEBO
ICES
lEBO

Test Condition

1r.=2mA, IB=O
IE = 1J.lA. le=O
VcE =32V; VBE=O
VEB=4V, 10=0
.. Vr:F=5V. Ic=2mA
liFE
VcE =lV, le=50mA
VeE (sat)
Ic= 1OmA, IB=0.25mA
Ic=50mA. 1"=1 25mA
VBE (sat)
le=50mA, IB=0.25mA
Ic=50mA, IB= 1.25mA
VBE(on)
Ic=2mA, VCE=5V
VCE=5V,lc=10mA
fr
1=100MHz
Cob
VcB =10V, IE=O
l=lMHz
Ic=0.2mA, VeE=5V
NF
1= 1 KHz, Rs:=2KO
ton
Ic=10mA,IB,=lmA
tolf
IB2 =lmA, VB8=3.6V
RL=9900, R,=R,=5KO

Min

Max

45
5

120
60

0.6
0.7.
0.55
125

20
20·
220
0.35
0.55
0.85
1';05
0.75

Unit
V
V
nA
nA

V

V
V
V
V
MHz

4.5

pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG·SEMICONDUcroR

490

BCX70H

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
Vcoo
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

45
45
5
200
350
150

V
V
V
rnA
mW
·C

• Refer to MMBT3904 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Symbol
BVcEo
BVEBO
ICES
lEBO
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VBE (sat)

Base-Emitter On Voltage
Current Gain-Bandwidth Product

fr

Output Capacitance

Cob

Noise Figure

NF

Tum On Time
Tum Off Time

t, 'I

VBE (on)

ton

Test Condition
Ic=2.0mA, IB=O
·IE=1.01-/A. Ir=O
VCE=~2V VBE=O
VEB =4V, Ic=O
VcE =5V,lc=10I-/A
VCF=5V. Ic=2.0mA
VcE =lV, Ic=50mA
Ic= 1OmA, IB=0.25mA
Ic=50mA. IR=1.25mA
Ic=50mA, Is=0.25mA
Ic=bUmA, IB= 1.~bmA
Ic=2.0mA, VcE =5V
Ic =10mA, VcE =5V
f=lMHz
VcB =10V,IE=0
f=100MHz
VcE=5V, Ic=0.2mA
Rs=2KI2, f=lKHz
Ic=10mA, IB1=1.0mA
VBB=3.6V, IB2= 1.0mA
R.=R2 =5KI2, RL =99011

Min

Max

45
5
20
20
20
180
70

0.6
0.7
0.55
125

Unit
V
V
nA
nA

310
0.35
0.55
0.85
1.05
0.75

V
V
V
V
V
MHz

4.5

pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUCTOR

491

NPN EPITAXIAL SILICON TRANSISTC)R

BCX70J

GENERAL PURPOSE TRANSISTOR

''',

"

50T·23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

I

Collector· Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

45
45
5
200
350
150

V
V
V
mA
mW
°C

• 'Refer to MMBT3904 for graphs
Base 2

1

Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta ='25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth' Product
Output Capacitance
Noise Figure
Turn On Time
Turn Off Time

Symbol
BVcEo
BVEBO
ICEs
lEBO
hFE

Test Condition

Ic=2.0mA. Is=O
IE=1.0".A. Ir=O
VcE =32V VBE=O
VEB=4V. Ic=U
VcE =5V.lc=10".A
. Vr, =fiV. Ic=2.0mA
VCE=IV. Ic=50mA
VCE (sat)
I, = 1UmA. IB=0.25mA
Ic=50mA, IB=1-.25mA
Ic=50mA. Is=O 25mA
VBE (sat)
Ic=50mA. Is=1 25mA
.lc=2.0mA, VcE =5V
VSE (on)
h.
Ic= 1 OmA. VCE=5'{
f=100MHz
Ves= 1 OV, IE=O
Cob
f=1MHz
NF
VCE=5V. Ic=0.2mA
Rs =2KO, f=1KHz
ton
Ic= lOmA. IS1 = 1 .0mA
tott
VSB=3.6V. IB2=1.0mA
R, =R,=5KO. RL =9900

Min

Max

45
5
20
20
40
250
90

0.6
0.7
0.55
125"

Unit
V
V
nA
nA

460
0.35
0.55
0.85
1.05
0.75

•

V
V
V
V

'v
MHz

4.5

pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUCTOR

492

BCX70K

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
Vcso
VCEO
VESO
Ic
Pc
Tstg

. Rating
45
45
5
200
350
150

Unit
V
V
V
mA
mW
DC

• Refer to MMBT3904 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Curreot Gain

Symbol
BVcEO
BVEBO
'CES
lEBO
hF'

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VBE (sat)

Base-Emitter On Voltage
Current Gain-Bandwidth Product

fr

Output Capacitance

Cob

Noise Figure

NF

Turn On Time
Turn Off TIme

ton
toll

VBE (on)

Test Condition
Ic=2.0mA,I,=0
IE=1.0",A, Ir=O
VcE=32V Val =0
VEB=4V. Ic= 0
VcE =5V, Ic =.10",A
Vcr =5V, Ic=2.0mA
Vc,=lV, Ic=50mA
Ic= I UIlIA, IB=0.25mA
Ic=50mA,ls=1.25mA
Ic=50mA, Is=0.25mA.
Ie =50mA, Is= 1.25mA
Ic=2.0mA, VcE=5V
Ic=10mA, VcE =5V
f=100MHz
Ves= 1OV .. 1,=0
f=lMHz
VCE =5V, le=0.2mA
Rs=2KO, f= 1 KHz
Ic= 1 OmA, .lS1 = 1.0mA
Vss=3.6V, IS2= 1.0mA .
R,=R,=5KO, RL =9900

Min

Max

45
5
20
20
100
380
100

0.6
0.7
·0.55
125

Unit
V
V
nA
nA

630
0.35
0.55
0.85
1.05
0.75

V
V
V
V
V
MHz'

4.5

pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUCTOR

493

BCX71G-

. PNP EPITAXIAL' SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
80T-23

ABSOLUTE MAXIMUM RATINGS'(Ta =25°C)
Characteristic
Coliector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VESO
Ic
Pc
Tstg

Rating

Unit

.45
45
5.0
100
350
150

V
V

V
mA
mW
°C

• Refer to MMBT5086 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Coliector-Emitter Breakdown Voltage
Emitter-Base Saturation Voltage
Collector Cutoff Current
DC Current Gain

BVcEo
BVEso
ICES
hFE

Coliector-Emitter Saturation Voltag'e

VCE (sat)

Base-Emitter Saturation Voltage

VBI=lsat)

Base-Emitter On Voltage.
Output Capacitance

VBE (on)
Cob

Noise Figure

NF

Turn On Time
Turn off Time

ton
toll

Test Condition
Ic=2mA, Is=O
le=1/-1A, Ic=O
Vce=32V, VBE=O
Vce=5V, Ic=2mA
VcE =1V, Ic=50mA
Ic= 10mA, 1a=0.25mA
Ic=50mA,ls=1.25mA
Ic= 1 OmA, Is=0.25mA
Ic=50mA, Is=1.25mA
Ic=2mA, VcF =5V
Vcs=10V, IE=O
f=1MHz
Ic=0.2mA, VcE ;'5V
Rs=2KIl, f=1 KHz
Ic =10mA,ls,=1mA
. IS2= 1 mA, Vss =3:6V
RL=99011

Min

Max

45
5
120
60

0,6
0.68
0.6

20
220

Unit
V
V
nA

0.25
0.55
0.85
1.05
0.75
6

V
V
V
V
V
pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUcroR

494

BCX71H

PNP EPITAXIAL SILICON TRANSISTOR'

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector .Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

45
45
5
100
350
150

V
V
V
rnA
mW
°C

• Refer to MMBT5086 for graphs
1

Base 2. EmItter 3. Collector

Min

Max

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain

Symbol

Test Condition

BVCEO
. BVEBO
ICES
hFE

!
Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VSE (sat)

Base-Emitter On Voltage
Output Capacitance

VSE (on)
Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton
toff

Ic=2mA, Is=O
IF=1IlA. lr=O
VcE =32V, VBE=O
Vc.=bV, Ic= 1vilA
VCE=5V.lc=2mA
VcE =1V, Ic=50mA
Ic= 1UmA, Is=0.25mA
Ic=50mA, Is= 1.25mA
Ic=10mA,ls=O.25mA
Ic=50mA, Is= 1.25mA
Ic=2mA, Vrr =5V
Vcs=10V, 'E=O
f=1MHz
Ic=0.2mA, VcE =5V
f=1KHz, Rs=2KO
Ic=10mA,lsl=1mA
IS2=1 rnA, V88=3.6V
RL =9900·

45
5
20
30
140
80

0.6
0.68
0.6

Unit
V
V
nA

310
0.25
0.55
0.85
1.05
0.75
6

V
V
V
V
V
pF

6

dB

150
800

ns
ns

; Marking

c8

SAMSUNG SEMICONDUcroR

495

BCX71J

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
80T-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°'C)
Characteristic
Collector· Base Voltage
Collector-Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCE~
VEBO
Ie

Pc
Tstg

Rating

Unit

45
45
5
100
350
150

V
·V
V
mA
mW
·C

• Refer to MMBT5086 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C) .
Characteristic
Collector· Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain

Symbol
. BVcEo
BVEBO
ICEs
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VBE (sat)

Base-Emitter On Voltage
Output Capacitance

VBE (on)
Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton
'Ioff

Test Condition
Ic=2mA, IB=O
Ir=h,A. 'Ir=O
VcE =32V, VBE=O
VcE=bV, Ic= 1OI'A
VOl =5V. Ic=2mA
VcE =1V, Ic=50mA
Ic= 1OmA, IB=0.25mA
le=50mA,IB=1.25mA
le= 1 OmA, IB=0.25mA
le=50mA, IB=1.25mA
le=2mA, VCI =5V
VcB =10V.I E =0
f=1MHz
le=0.2mA, VcE =5V
f=1KHz, Rs=2KO'
le=10mA,IB1 =1mA
IB2= 1 mA, VBB=3.6V
RL =9900

Min

Max

45
5
20
40
250
100

0.6
0.68
0.6

Unit
V
V
nA

460
0.25
0.55
0.85
1.05
0.75
6

V
V
V
V
V
pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUCTOR

496

BCX71K

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
&OT·23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)

, I
I

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Col/ector Current
Col/ector Dissipation
Storage Temperature

Symbol
Vcoo
VCEO
Veoo
Ic
Pc
Tstg

Rating

Unit

45
45
5.0
100
350
150

V
V
V
mA
mW
·C

• Refer to MMBT5086 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Col/ector Cutoff Current
DC Current Gain

Symbol
BVcEO
BVEoo
ICEs
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage·

VBE (sat)

Base-Emitter On Voltage
Output Capacitance

VBE (on)
Cob

Noise Figure

NF

Turn On Time
Turn Off Time

ton
toff

Test Condition
Ic=2mA, IB=O
IE=1j.1A,lc=0
VCE=32V. VBE=O
VcE =5V, Ic= 1U",A
VcE =5V, Ic=2mA
VCE = IV, Ic=50mA
Ic= 1 OmA, IB=0.25mA
Ic=50mA, IB=1.25mA
. Ic=10mA, IB=0.25mA
Ic=50mA, IB=1.25mA
Ic=2mA, VcF =5V
VCB=10V. IE=O
f=1MHz
Ic=0.2mA, VcE =5V
Rs=2KO, f=1KHz
Ic=10mA,IB1=1mA
IB2 =1 mA, V8B=3.6V
RL =9900

Min

Max

45
5
20
100
380
110

0.6
0.68
0.6

Unit
V
V
nA

630
0.25
0.55
0.85
1.05
0.75
6

V
V
V
V
V
pF

6

dB

150
800

ns
ns

Marking

c8

SAMSUNG SEMICONDUCTOR

497

PNP'" EPITAXIA'L SILICON .tRANSiStoR



eo

'"
~

-

10.200,.1\

Vr-

40

~

g

1'_1~0,.l\

r/ f..-

I

20

i::l
W

~

10=100,.1\ f--

1 / l>-

J!

,0

10.250,.1\

~V

oJ
oJ

8

1 ::::r--=±:c ~ --~=. ~-.:::..- ~

10.300,.1\

t~ i-""'"

,I

_~E-

•
18

*.c_t+~~~~C~~~E~~=
- ,- f -. --+:=-

1

--I-- -

I I

i

J! 0.5

10.50,.1\

12

a

t,

= '- . ._ _ = =

-=tJ=.:::--=f-=:
--t-::j-.:....t-

c=:r-c-I"t--t= '--t-- --- ---1--'- r---

-=-1=---=-:"::'--r-+-+-- +-

0.3

--t---

0.1

1

-r- --r- --

_--+_1 1

III

I

0.2

20

1-- .- ,...

:

0.4

o.s

0.6

lD

VeE (\I). COLLECTOR-EMITTER VOLTAGE

VO' (V). BASE-EMITTER VOLTAGE

DC CURRENT GAIN

CURRENT GAIN BANDWIDTH PRODUCT

1000 0.

1.2

••

1000

5000

f-- f-VCE':I1I.ev
3000 f-

VeE _&I

f--

k"

zlOOO

~

I:
u

i'""'--,

g

i

100

1----

50

30
10

3

5

10

30 50

100

300 500

0.1

1000

0.3

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

5

10

30 50

100

OUTPUT CAPAC(TANCE
100

1000 0
500 0
W

3

Q.5

Ie (mA), COLLECTOR CURRENT

Ie (mAl. COLLECTOR CURRENT

I--

50
Ie-lOis

~300 Ol--+-

30.

g

r-- t-f-1MHz
r-- t-IE""O
t--I-

Z

~1000

~

::>

:t"-

~

r-:-I-

-

VSE (sat)

!300
V
0.5

0

I-

VeE lsat)

0.3

J--

I IIII

0
3

5

10

I
i
30 50

100

300 500

Ie (mAl. COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR.

0. 1
1000

3

5

10

30 50

100

300 500 1000

Veo (\I). COLLECTOR-BASE VOLTAGE

517

NPN EPITAXIAL SILICON TR4NSISTOR

· MI\t1BC1623L4
AMPLIFIER TRANSISTOR

50T-23 .

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Siorage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

50
40
5.0
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBC1623L3 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage·
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

ICBO
lEBO
hFE
VCE (sat)
VeE (sat)
VeE (on)
fT

Test Condition
Vce=40V, IE=O
VEe =5V, Ic=O
VcE =6V, Ic= 1.0mA •
Ic=100mA,le=10mA
Ic =100mA,le=10mA
Ic=1.0mA. Vr,=6V
VcE =6V: IE =10mA
f=100MHL

Min

90

0.6
200

Max

Unit

100
100
180
0.3
1.0
0.7

nA
nA
V
V.
V
MHz

Marking

c8

SAMSUNG SEMICONDUCTOR

518

MMBC1623L5

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
. Characteristic
Collector-Base Voltage
Collector-Emitter Voltage.
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
.VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

.50
40
5.0
100
350
150

V
V
V
rnA
mW
°C

• Refer to MMBC1623L3 ,lor graphs

•

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 ° C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
. Base-Emitter On Voltage
Current Gain-Bandwidth Product .

Symbol
-lcBo
lEBO
hFE
VCE (sat)
VBE (sat)
VB~ (on)
fT

Test Condition
VcB =40V, IE=O
VEB =5V, Ic=O
VcE =6V; Ic= 1.0mA
Ic =100mA,IB=10mA
Ic =100mA,IB=10mA
Ic=1.0mA. Vcr =6V
VcE =eV.IE=10mA
f=100MHz

Min

135

0.6
200

Max

Unit

100
100
270
.0.3
1.0
0.7

nA
nA
V
V
V
MHz

Marking

c8

SAMSUNG SEMICONDUCTOR

519

MMBC1623L.6·

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
80T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VceO
VCEO
VESO
Ic
Pc
Tstg

Rating
50
40

5.0
100
350
150

Unit
V
V
V
mA
mW
·C

• Refer to MMBC1623L3 for graphs

1. Base 2. Emitter 3. Collector

EL.~CTRICAL CHARACTERISTICS (Ta = 25 ° C)
CharacteristiC
Collector Cutoff Current
Emitter Cutoff Current·
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

Symbol
Icso
IESO
hFE
VCE (sat)
VSE (sat)
VSE (on)
fT

.Test C\?ndition
Vcs=40V. IE=O
VEs=5V. Ic=O
VCE=6V. Ic= 1.0mA
Ic=100mA.ls=10mA
Ic=100mA.ls=10mA
Ic= 1.0mA. Vr.,=6V
VCE=6V. IE=10mA
. f=100MHz

Min

Max

Unit
nA
nA

200

100
100
400
0.3
1.0

0.6

200

0.7

'V
V
V
MHz

Marking

c8

SAMSUNG SEMICONDUCTOR

520

MMBC1623L7

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

50
40
5.0
100
350
150

V
V
V
mA
mW
°C

• Refer to MMBC1623L3 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 ° C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base:Emitter On Voltage
Current Gain-Bandwidth Product

Symbol

Test Condition

Vcs =40V, IE =0
ICBO
VEs =5V, Ic=O
lEBO
VcE =6V, Ic= 1.0mA
hFE
Ic=100mA,ls=10mA
VCE (sat)
Ic= 1 OOmA, Is;= 1 OmA
VSE (sat)
VSE (on) IIC=1.0mA V, -fiV
VCE=6V. IE=lOmA
fT
i f=100MHl

Min

300

0.6
200

Max

Unit

100
100
&00
0.3
1.0
0.7

nA
nA
V
V
V
MHz

Marking

c8

SAMSUNG SEMICONDUCTOR·

521

NPN EPITAXIA~. SILICON T~SlsrOR

MMBR5179

RF AMPLIFIER TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)·
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T.=25°C)
Derate above 25°C
Junction Temperature
. Storage Temperature

Symbol
VCBO
VCEO
VE~
Ic
Pc
Tj
Tstg

Rating

Unit

20
12
2.5
50
350
2.8
150
-55"'150

V
V
V
·mA
mW
mW/oC
°C
°C
1. Base 2. Emitter 3. ColI.ctor

ELECTRICAL CHARACTERISTICS (Ta =·25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Small Signal Current Gain
Noise Figure

BVcBO
BVcEo
BVEBO
ICBO
hFE
VCE (sat)
VBE (sat)

20
12
2.5

Ccb
hie
NF

Common Eniitter Amplifier Power Gain

Gpe

Ic=0.01 mA, IE=O
Ic=3mA, Is=O
IE=0.01 mA, Ic=O
Vcs=15V,IE=0
VCE=1V,lc=3mA
ic=10rrfA,ls=1mA
Ic=10mA,ls=1mA
VcE =6V, Ic=5mA, f=100MHz
Vcs= 1 OV, IE=O, 1=0.1 MHz to 1 MHz
VcE =6V, Ic=.2mA, f=1KHz
VcE=6V, Ic=1.SmA, .f=200MHz
Rs=500
VcE =6V, Ic=5mA, f=200MHz

fr

Max

Unit

0.02

V
V
V
fAA

0.4
1

V
V·

25

)

900

1

MHz
pF

25
4.5
15

~B

dB

Marking

~
)c8

SAMS·UNG SEMICONDUCTOR

522

NPN EPITAXIAL SILICON TRANSISTOR

MMBT2222

GENERAL PURPOSE TRANSISTOR

801-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Veso
VeEo
Veso
Ie
Pc
Tstg

Rating

Unit

60
30
5
flOO
350

V
V
V
rnA
mW
·C

lbU

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain

Symbol
BVeso
BVeEO
BVeso
leEX
leBo
hFe

• Collector-Emitter Saturation Voltage

VeE (sat)

• Base-Emitter. Saturati0':1 Voltage

VBE (sat)

Current Gain-Bandwidttl Product

fr

Output CapaCitance

Cob

Turn On TIme

ton

Turn Off Time

totl

·Pulse test: Pulse Width:$300j.lS, Duty

Test Condition
le= 1OJ.lA, le=O
le= 1 OmA, IB=O
le=10j.lA,le=0
Vee=60V, VBE =3V
Vcs=50V, IE=O
Vce=10V,lc=0.1mA
VeE =10V,le=1.0mA
VeE =10V,lc=10mA
·VcE =10V,lc=150mA
·VeE = 1 OV, le=500mA
le=150mA,IB=15mA
le=500mA, IB=50mA
le= 150mA, IB= 15mA
Ic=500mA, IB=50mA
Ic=20mA, VcE =20V
f=100MHz
VcB=10V,IE=0
f=1.0MHz
Voc=30V, VBE =0.5V
Ic=150mA, IB1 =15mA
Voc=30V,lc=150mA
IB1 =IB2= 15mA

1. Base 2. Emitter 3. Collector

Min

Max

Unit

10
0.01

V
V
V
nA
fAA

60
30
5

35
50
75
100
30

300
0.4
1.6
1.3
2.6

V
V
V
V
MHz

8.0

pF

35

ns

285

ns

250

Cycl~2%

Marking

c8

SAMSUNG SEMICONDUCTOR

523

MMBT2222

MPN EPITAXIAL, SILICON TRANSISTOR
DC CURRENT GAIN

CURRENT GAlN-BANDWIDTH PRODUcr

1000
500

1000

-

-

VCE_1OV

f-Vce.2O\I

.-

300

'

......

/1,,1

\

10
3

5

10

30

100

300 500 1000

3

10

5

COLLECTOR-EMITTER SATURATION VOLTAGE
.......~._~ •• ~. SATURATION VOLTAGE

-

3

Ie'.o'

f-;.'M~'

I

"""- "\

I

l'

i

E

V

0.1

"-

i

8

~~'

4

...... r--..

2

Illi

"

om'
1

3

5

10

30 50

100

300 500

Ie ImA). COLLECIOII CUIIIIENT

,c8

1000

10

~

,

300,1500

!I

12

i

100

OUTPUT CAPACITANCE

10

I

30 50

lc(mAI. COLLECIOII~

Ie (mAl. COI.LECIOII CURRENT

SAMSUNG SEMICONDUCTOR

1000

3510

3050

100

V.. IVI. COLLECIOII-IIAIWLTAGE

524

MMBT2222A

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

75
40
6
600
350
150

V
V
V
mA
mW
°C

• Refer to MMBT2222 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
• DC Current Gain

Symbol
BVcBO
BVcEo
BVEBO
IcBO
hFE

• Collector-Emitter Saturation Voltage

VCE (sat)

• Base-Emitter Saturation Voltage

VeE (sat)

Current Gain-Bandwidth Product

fr

Collector-Base Capacitance

Cob

Noise Figure

NF

Turn On Time

ton .'

Turn Off Time

toff

'Pulse test: Pulse Wldth::;300f/s, Duty

c8

Cycle~2%

SAMSUNG SEMICONDUCTOR

Test Condition
Ic= 1OIlA,IE=0
Ic= 1 OmA, le=O
IE=10IlA, Ic=O
Vce=60V, IE=O
VCE = 1OV, Ic=0.1 mA
VcE =10V,lc =1mA
VCE=10V,lc=10mA
VcE =10V,l c=150mA
VcE =10V, 1~=500mA
Ic=150mA,le=15mA
Ic=500mA, le=50mA
Ic= 150mA, le= 15mA
Ic=500mA,le=50mA
Ic=20mA, VcE =20V
f=100MHz
Vce=10V, IE=O
f=1MHz
Ic='100f/A, VcE =·10V
Rs=1KO, f=1KHz
Vcc =30V,lc =150mA
VBE =0.5V, Ie, = 15mA
Vcc=30V,lc=150mA
le,=le2 =15mA

Min

Max

Unit

0.01

V
V
V
IlA

75
40
6
35
50
75
100
40

0.6

300
0.3
1.0
1.2
2.0

300

4

V
V
V
V
MHz'

8

pF

4

dB

35

ns

285

ns

Marking

525

•

,

,

,

. NPN EPITAXIAL SILICON TRANSISTOR

MMBT2'484
LOW NOISE TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
Veeo
Ic
Pc
Tstg

Rating
60
60

6
50
350
150

Unit
V
V
V
mA
mW,
°C

,

• Refer to MMBT5088 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdpwn Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Noise Figure

Symbol
BVCBO
. BVceo
BVEBO
ICBO
lEBO
hce

Test Condition

Ic= 1 O,..A, le=O
Ic= 1 OmA,le=O
IE= 1 O,..A,' Ic=O
Vce=45V, IE=O
. VEe =5V, 10=0
VCE=5V.le=1mA
VcE =5V, le= I umA
VCE (sat)
Ic=lmA,le=O.lmA
VeE (on)
Ic=lmA, VCE=5V
Cob
Vce=5.0V, IE=O
f=lMHz,
NF
Ic= 1 OjAA, VcE =5V
Rs=10KO, f=lKHz

Min

Max

60
60
5

Unit

10
10

V
V
V
nA
nA

800
0.35
0.95
6

V
V
pF

3

dB

250

Marking

c8

SAMSUNG SEMICONDUcroR

526

MMBT2907

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

80T-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-~ase Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
Vcso
VCEO
VESO
Ic
Pc
Tstg

R'ating

Unit

60
40
5
600
350
150

V
V
V
mAo
mW
°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Collector-Base Breakdown Voltage
·Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain

Symbol
BVcso
BVcEo
BVEso
,CEX
leso
hFE

• Co!'ector-Emitter Saturation Voltage

VCE (sat)

• Base-Emitter Saturation Voltage

VeE (sat)

Current Gain-Bandwidth Product

fr

Output CapaCitance

Cob

Turn On TIme

ton

Turn Off Time

toff

Test Condition
Ic= 1 OIJA, 'E=O
Ic=10mA,le=0
IE=10~A, Ic=O
VcE =30V, VeE =0.5V
Vce=50V, 'E=O
VcE =10V, Ic=O.lmA'
VCE = 1 QV, Ic= 1 .0mA
VcE =10V,lc=10mA
·VcE =10V,lc =150mA
·VcE =10V,lc=500mA
'c=150mA, le=15mA
'c=500mA,le=50mA
Ic=150mA,le=15mA
Ic=500mA,le=50mA
'c=50mA, VcE =20V
f=100MHz
Vqe=10V,IE='0
f=1.0MHz
Vcc=30V,lc=150mA
le1=15mA
Vcc=6V, Ic= 150mA
181 =le2= 15mA

1, Base 2. Emitter 3. Collector

Min

Max

Unit

50
0.02

V
V'
V
nA
,..A

60
40
5

35
50
75
100
30

300
0.4
1.6
1.3
2.6

V
V
V
V
MHz

8.0

pF

45

ns

100

ns

200

·Pulse Test: Pulse Widt~300,..s" Duty Cycle::;2%

Marking

:--

.c8

SAMSUNG SEMICONDUcroR

527

MMBT2907

PNPEPITAXIAL SILICON TRANSistoR
DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT
1000

1000
500

I-- r- YeE • 2OV

I-- rYe.-1OV

300

'"

/

10

r\

V

10
3

5
10
30 SO 100
Ie (mA), COLLECIOR CURRENT

300 500 1000

3

5

COLLECTOR·EMITTER SATURATION VOLTAGE
BASE·EMITTER SATURATION VOLTAGE

100

300 500

1000

11

12

le .. O

ie_lOis
.10

1

30 50

OUTPUT CApACITANCE

10

I--

10

Ie (mA), COLLECIOR C,!RRENT

~
'\

rl_1M!lz

1,\

Y"(IIII)

I'

./

1

'~

Yce(1III)

i
1111

0.01

3

5

10

II
30 SO

100

300 500 1000

Ie (mA), COLLECIOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

10

30

60

100

Vee (V), COLLECIOR-IIASE VOLTAGE

.528

MMBT2907A

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSfSTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation.
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

60
60
5
600
350
150

V
V
V
mA
mW
°C

'Refer to MMBT2907 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25 0 C)
..
<;:haracteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain

Symbol
BVcBo
BVcEO
BVEBo
ICBO
hFE

'Collector-Emitter Saturation Voltage

VeE (sat)

'Base-Emitter Saturation Voltage

VBE (sat)

Current Gain-Bandwidth Product

fr

Output Capacitance

Cob

Turn On Time

ton

Turn Off Time

toff

Test Condition
Ic=10"A,IE=0
Ic=10mA,IB=0
IE=1O"A, Ir=O
Vca=50V 'E=O
VCE=10V,lc=O.lmA
VCE;= 1 OV, Ic= 1.0mA
VcE =10V,lc=10mA
'VcE =10V,lc=150mA
'VcE =10V,lc=500mA
Ic = 1 50mA, la = 1· 5mA
Ic=500mA, 'B=50mA
Ic=150mA, la=15mA
Ic=500mA, la=50mA
Ic=50mA, VcE =20V
f=100MHz .
Vca= 1 OV, IE=O
f=1.0MHz
Vcc=30V, ic= 150mA
IB,=15mA
Vcc=6V, Ic= 150mA
IB,=IB2 =15mA

Min

Max

60
60
5

V
V
V
0.01

75
·100
100
100
50

Unit

"A

300

D.4
1.6
1.3
2.6
200

V
V
V
V
MHz

8

pF

50

ns

110

ns

'Pulse Test: Pulse Width~300"s, Duty Cycle~2%

Marking

.c8

SAMSUNG SEMICONDUCTOR

529

M.IVI&r390~

NPN .EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
80T-23

ABSOLuTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

I

I

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base .Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
Vcso
VCEO
VEso
Ic
Pc
Tstg

Rating

Unit

60
40
6
200
350
150

V
V
V
mA
mW
°C

• Refer to MMBT3904 for graphs
1. Base 2. Emitter 3, Collector
",,,

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
· Collector Cutoff Current
• DC Current Gain

Symbol
BVcso
BVcEO
BVEso
ICEX
hFE

• Collector-Emitter Saturation Voltage

VCE (sat)

• Base~Emitter Saturation Voltage

VSE (sat)

Current Gain-Bandwidth Product

fr

0l!tput Capacitance

Cob

Noise Figure

NF

Turn On Time

. ton

Turn Off Time

toft

Test Condition

Min

Ic=10/AA,IE=0
Ic=·1 mA, Is=O
IE=10/AA,lc=0
VcE =30V, VEs =3V
VCE= 1V,·l c =0.1 mA
VcE'=1V,lc=1mA
VcE =1V,l c =10mA
VCE'1"1V, Ic=50mA
VcE =1V,lc =100mA
Ic=1 OmA,·ls=1 mA
Ic=50mA, Is=5mA
Ic=10mA,ls=1mA
Ic=50mA, Is=5mA
Ic=10mA, VcE =20V
f=100MHz
Vcs=5V, IE=O
f=1MHz
Ic=100/AA, VCE=5V
Rs=1 KIl
f= 10Hz to 15.·7KHz
Vcc=3V, VsE =0.5V
Ic= 1 OmA, IS1 = 1 mA
Vcc=3V,lc=10mA
IS1 =ls2= 1 rnA

60
40
6

•

,.

50
20
35
50
30
15

0.65

V
V
V
nA

0.2
0.3
0.85
0.95.

V
V
V

'V.
MHz

4

pF

6

dB

70

ns

225

·ns

Marking

..

SAMSUNG SEMICONDUCTOR

Unit

150

250

'Pulse Test: Pulse Width:S;300",s, Duty Cycle:S;2%

c8

Max

~
530

MMBT3904

NPN EPITAXIAL SILICON TRANSISTOR

. GENERAL PURPOSE TRANSISTOR

801-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

VCBO
VCEO
VEeo
Ic
Pc
Tstg

Rating

Unit

60
40
6
200
350
150

V
V
V
rnA
mW
°C

ELECTRICAL CHARACTERISTICS (Ta= 25 0 C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
• DC Current Gain

BVcBO
BVcEo
BVEeo
IcEx
hFE

• Collector-Emitter 'Saturation Voltage

VCE (sat)

• Base-Emitter Saturation Voltage

VeE (sat)

Current Gain-Bandwidth Product

fr

Output Capacitance

Cob,

Noise Figure

NF

Turn On Time

ton

Turn Off Time

toff

• Pulse Test: Pulse

Width~300f's,

Duty

1. Base 2. Emitter 3. Collector

Test Condition

Min

Ic= 1 Of'A, IE=O
Ic=1mA,le=0
IE= 1Of'A,lc=0
VcE =30V, VEe =3V
VCE = 1 V, Ic=0.1 rnA
VCE=1V,lc=1mA
VcE =1V,lc=10mA
VCE=1V,lc=50mA
VcE ='1 V, Ic= 1OOmA
Ic=10mA,le=1mA
Ic=50mA, le=5mA
Ic=10mA,le=1mA
Ic=50mA, le=5mA
Ic=10mA, VcE =20V
f=100MHz
Vce=5V, IE=O
f=1MHz
Ic=100f'A, VcE =5V
Rs=1KO
f= 10Hz to 15.7KHz
Vcc=3V, VeE =0.5V
lc= 1 OmA, Ie, = 1 rnA
Vcc=3V,lc=10mA
le1=le2=1mA

60
40
6

Max

50
40
70
100
60
30

0.65

Unit
V
V
V
nA

300

0.2
0.3
0.85
0.95

300

V
V
V
V
MHz

4

pF

5

dB

70

ns

250

ns

Cycle~2%

Marking

c8

SAMSUNG SEMICONDUCTOR'

53~

•

~MBT3904

'NPN EPITAXIAL. SILICON TRANSISTOR
'CURRENT GAIN-BANDWIDTH PRooUCT

'DC CURRENT GAIN
1000

r-- 110&_

,..
f--110&-

........

V

./

1--'

,/

\

V

,/

40

.

o 0.1

10
Q3

D.5

1

3

5

10

30 150 100

0.1

!l.3

D.5

3

1

5

10

30 50100

Ie (IlIA). COLLECIOR CURRENT

Ie (mA). COLLECTOR CURRENT

BASE-EMITTER.sATURATION VOLTAGE
COLLECIOR-EMITTER SATURATION VOLTAGE

OUTPUT~TANCE

10

!

-

_I.-J I

1e-1OI.

f-1MHz

VIE (III)

!
I

1

~

I

i'-...

i

S

........

2

r-..

(III)

!

G.01
0.1

Q3

D.5

1

III
3

5

10

30 150 100

Ie (mAl. COLLECIOR CUAIIENT

cJSAMSUNG SEMICONDUCroR

3510

_

30

150

100

(11). COLLECIOfI.IIASE VOLTAGE

532

MMBT3906

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

501-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
EmiUer-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
Vcoo
VCEO
VEOO
Ic
Pc
Tstg

Rating

Unit

40
40
5
200
350
150

V
V
V
mA
mW
°C

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
• DC Current Gain

Symbol
BVcoo
BVcEO
BVEeo
,cEx
hFE

• Collector-Emitter Saturation Voltage

VCE (sat)

• Base-Emitter Saturation Voltage

VeE (sat)

Current Gain-Bandwidth Product

fr

Output Capacitance

Cob

Noise Figure

NF

Turn On Time

ton

Turn Off Time

loff

1. Base 2.

Test Condition

Min

Ic =10!,A,IE=0
Ic= 1.0mA, le=O
IE= 1 O!,A, Ic=O
VcE =30V, VEe =3V
VCE=lV,lc=0.1mA
VCE=lV,lc=lmA
VcE =lV,lc =10mA
VCE=l,V, Ic=50mA
VCE=1V,lc=100mA
Ic=10mA,le=lmA
Ic=50mA, le=5.0mA
Ic=10mA,le=1.0mA
Ic=50mA: le=5.0mA
Ic=10mA, VcE =20'l/
f=100MHz
Vce=5V, 'E=O
f';"1.0MHz
Ic= 1 OO!,A, VcE =5V
Rs=1 KIl
f= 10Hz to 15. 7KHz
Vcc=3V, VeE =0.5V
'c=10mA,le1 =lmA
Vcc=3V,lc=10mA
lel=le2=1mA

40
40
5

Emitter~.

Collector

Max

50
60
80
100
60
30

Unit
V
V
V
nA

300

0.25
0.4
0.85
0.95

0.65
250

V
V
V
V
MHz

4.5

pF

4

dB

70

ns

300

ns

'Pulse Test: Pulse WidthS:300!,s, Duty CycleS:2%

Marking

c8

~
SAMSUNG SEMICONDUcToR

533

I

PNP..EPITAXiALSILICON TRANSISTOR

MMBr3906
DC CURRENT GAIN

CURRENT GAIN-IIANDWIDTH PRODUCT

'000

'000

500

300

r-

vce"""v

II

•

V

~'OO

I:
}'O
10

3

5

'0

30 50

'00

300 500

0.1

'000

o.s

0.3

Ie (mA), COLLECTOR CURflENT

3

1

6

10

30 50

100

Ie (mA), COLLECIOR CURRENT

BASE,EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

OUTPUT CAPACITANCE

'0
12

-

Ie_lOla

-l.-J
.

I

f=lMHz,

10

,:

Vae(

-

-

",

~

,

OD

a.,

ce(SBI

I'-

1-11'"
0.3

o.s

III
3

5

'0

30 50

Ie (mAl, COLLECIOII CURRENT

c8

SAMSUNG SEMICONDUCIOA

'00

10

20 30

50

100

YC8(V), COI.LECIOIIo8ASEIIOLTME

534

MMBT4123 .

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

VCBO
Vceo
VeBO
Ic
Pc
Tstg
Rth(j-a)

Rating

Unit

40
30
5
200
350
150
357

V
V
V
mA
mW
·C
·C/W

1. Base 2. Emitter 3. Collector

.ELECTRICAL CHARAqERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain
• Collector-Emitter Saturation Voltage
. • Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Collector Output- CapaCitance
Collector Input CapaCitance
Collector-Base CapaCitance
Noise Figure

• Pulse Test:

PW~300"s,

Duty

BVcBO
BVceo
BVeBO
IcBO
leBO
hFe
. Vce (sat)
Vee (sat)

fr
Cob
'Cib
Ccb
NF

Test Condition

Min

Ic= 1 OjAA, le=O
Ic= 1 mA, le=O
le= 101olA, Ic=O
Vcs=20V, le=O
Vae=3V, Ic=O
Vce=1V, Ic=2mA.
Vce= 1V, Ic=50mA
Ic=50mA, le=5mA
Ic =50mA, le=5mA
Vce=20V, Ic=10mA, f=100MHz
.Vce=5V, le=O, f=100MHz
Vee=0.5V, Ic=O, f=100KHz
Vce=5V, le=O, f= 100KHz
Vce=5V, Ic=1001olA, Rs=1kCl
Noise Bandwidth=10Hz to 15.7KHz

•

Max

40
30
5

50
25

50
50
150
0.3
0.95

250
4

8
4

6

Unit
V
V
V
nA
. nA

V
V
MHz
pF
pF
pF
dB

Cycle~2%

Marking

~
c8

SAMSUNG SEMICONDUCTOR

.535

••

NPH ·EPITAXIAL SILlCQ~ T~NSISTOR'

MMBT4124

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Chara~teristic

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

30
25
5
200
350
150

V
V
V
mA
mW
°C

• Refer to MMBT3904 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
• Collector-Emitter Breakdown Voltage
Emitter-Base Br.eakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain

BVcao
BVcEo
BVEBO .
ICBO
lEBO
hFE

·Collector-Emitter Saturation Voltage
• Base-Emitter Saturation Voltage .
Current Gain-Bandwidth Product

VCE (sat)
VBE (sat)

fr

Output· Capacitance

Cob

Noise Figure

NF

.Test Condition

Min

Ic= 1 OIAA, IE=O
Ic=1.0mA, 18=0
IE= 1 OIAA, Ic=O
VcB =20V, IE=O .
·VEB.~3V, Ic=O
VCE=1V,lc=2mA
VCE=1V,lc=50mA
Ic=50mA, IB=5.0mA
lc=50mA, IB=5.0mA
Ic=10mA, VcE =20V
f=100MHz
VcB =5V, IE=O
f=1.0MHz
Ic= 1 OOIAA, VcE =5V
Rs=1 KIl
f=10Hz to 15.1KHz

30
25
5

120
60

Max

50
50
360
0.3
0.95

300

Unit
V
V
V
nA
nA

V
V
MHz

4

pF

5

dB

• Pulse Test: Pulse Widtli~3bOlAs, Duty Cycle~2%
Marking

c8

SAMSUNG SEMICONDUCTOR

536

MMBT4125

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating
30
30

4
200.
350
150 .

Unit
V
V
V
mA
mW
·C

• Refer to MMBT3906for graphs

•

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
* DC Current Gain

BVcBo
BVcEo
BVeeo
ICBO
lEBO
hFE

* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product

VCE (sat)
VBE (sat)

h

Collector Base Capacitance

Ccb

Noise Figure

NF

Test Condition

Min

Ic=10j.lA,IE"'0
Ic=1mA,IE=0
IE=10j.lA,lc=0
VcB =20V, IE=O
VEB =3V, Ic=O
VCE=1V,lc=2.0mA
VCE=1V,lc=50mA
Ic=50mA, IB=5.0mA
Ic=50mA, IB=5.0mA
Ic=10mA, VeE =20V
f=100MHz
VcB =5V, IE=O
f=100t<:H:z;
Ic=100j.lA, VcE =5V
Rs=1K!},
f=10Hz to 15.7KHz

30
30

Max

4

50
25

50
50
150

Unit
V
V
V
nA
nA

0.4
0.95

V
V
MHz

4.5

pF

5

dB

200

* Pulse Test: Pulse Width~300j.ls, Duty Cycl~2%

. Marking

~
c8

SAMSUNG SEMICONDUCTOR

537

'MMBT4126

PNP EPITAXIAL
SILICON TRANSISr6R
.
.
.

,

.,'

:.~'".

"

.:

'

GENERAL PURPOSE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage femperature
Thermal Resistance Junction to Ambient

VCBO
' Vceo
VEBIJ
Ic'
Pc
Tstg
Rth(j-a)

-25
-25
-4
-200
350
150
357

V
V
V
mA
mW
·C
·CIW

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdewn Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain
'Collector-Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Collector Input CaPacitance
Collector-Base CapaCitance
Noise Figure

• Pulse Test:

PW~300/AS,

Symbol

=25 °C)
Test Condition

Min

Ic= -1 OIolA, le=O
Ic= -1 mA, le=O
1~=-'10/AA, Ic=O
Vcs=-20V, le=O
Vee=-3V, Ic=O
Vce =-1V,lc=-2mA
Vce =-1V,lc=-50mA
Vce (sat) . Ic=-50mA, Is='-5mA
Ic=-50mA,ls=.,-5mA
Vee (sat)
Vce =-20V,lc=-10mA,f=100MHz
h
Cib
Vse=-O.5V, Ic=O, f=1MHz
Ccb
Vce=-5V, le=O, f=1MHz
NF
Vce=-5V, Ic=-1OOIAA, Rs=1kD
Noise Bandwidth=10Hz to 15.7KHz
BVCBO
BVceo
BVEBIJ
ICBO
IEBIJ
hFE

Max

-25
-25
-4

120
60

Unit
V
V

-50
-50
360

nA
nA

-0.4
-0.95

V

250
10
4.5
4

V

MHz
pF
pF
dB

Duty Cyole:S2%

Marking

~
c8

SAMSUNG SEMICONDUCTOR'

538

MMBT4401

NPN EPITAXIAL SILICON TRANSISTOR

SWITCHING TRANSISTOR

50T-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating
60
40

6
600
350
150

Unit
V
V
V
mA
mW
°C

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Symbol

Characteristic
Collector-Base Breakdown Voltage
• Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cl!toff Current
Collector Cutoff Current
• DC Current Gain

BVcBO
BVcEo
BVEBO
IBEV
ICEl<
hFE

• Collector-Emitter Saturation Voltage

VCE (sat)

• Base-Emitter Saturation Voltage

VBE (sat)

Current Gain-Bandwidth Product

h

Collector Base Capacitance

Ccb

Tum On Time

ton

Tum Off Time

toll

'Pulse Test: Pulse

Width~300j.lS,

Test Condition
Ic= 1 OO/AA, IE=O
Ic=1.0mA, 18=0
IE= 1 OOj.lA, Ic"=O
VcE =35V, VEB=0.4V
VCE=35V, VBE =O.4V
VCE = 1V, Ic=0.1 mA
VCE=1V,lc=1mA
VCE=1V,lc=10mA
V,cE=1V, Ic=150mA·
VcE =2V, Ic=500mA
Ic=150mA,IB=15mA
Ic=500mA, IB=50mA
Ic=150mA,IB=15mA
Ic=500mA, IB=50mA
Ic=20mA, VCE = 1 OV
f=100MHz
VcB=5V, IE=O
f=100KHz
Vcc=30V, VBE =2V
Ic= 150mA, IB1 = 15mA
Vcc=30V, Ic= 150mA
IB1 =IB2 =15mA.

1. Base 2. Emitter 3. Collector'

Min

Max

Unit

100
100

V
V
V
nA
nA

60
40
6

20
40
80
100
40

0.75

300
0.4
0.75
0.95
1.2

250

V
V
V
V
MHz

6.5

pF

35

ns

255

ns

Duty Cycle5:2%

Marking

c8

SAMSUNG SEMICONDUCTOR

539

•

MMBT4401 .

NPN EPITAXIAL· SILICON TRANSlsmR
DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT.

1000

1000
)

-

JCE'-I,~

J

VeE-l0V

........

100
50

" "-

30

./

10

'"

-

10
3

5

10

30 50

100

300 500 ,000

10

1

COLLECTOR-EMITTER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE10

=

50

100

300

COLLECTOR-BASE CAPACITANCE

Ie lOis

10

JB!!~)

=-

30

Ie (mAl, COUEC'lOR CURRENT

Ie (mAl. COLLECIOR CURRENT

w

..
(J

~

.......

J

f 190,KHz

.......

z

...
!::

~

""

(J

~

l"-

I

D

r-r-

8

VeE (sat).

IIIII
3

5

10

30 50

100

300 500

Ie (mAl. COLLECIOR CURRENT

c8

SAMSUNG SEMICO~DUcroR

1000

3510

3050

100

300

Vee IVI. COLLEC:1QR.8ASE VOLTAGE

540

MMBT4403

PNP EPITAXIAL SILICON TRANSISTOR

SWITCHING TRANSISTOR

SOT·23

ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

40
40
5
600
350
160

V
V
V
rnA
mW
·C

ELECTRICAL CHARACTERISTICS (Ta =2S0C)
Characteristic
Collector-Base Breakdown Voltage
• Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain

Symbol
BVcBO
BVcEo
BVEBO
IBEv
ICEx
hFE

• Collector-Emitter Saturation Voltage

VOE (sat)

• Base-Emitter Saturation Voltage

VBE (sat)

Current Gain-Bandwidth Product

h

Collector-Base CapaCitance

Cob

Tum On Time

ton

Tum Off Time

tott

Test Condition
Ic=0.1 rnA, IE=O
Ic=1.0mA, IB=O
IE=0.1 rnA, Ic-=O
VcE =35V, VBE =O.4V
VCE~35V, VSE=O.4V
VcE =1V,lc:=0.1mA
VcE =1V, Ic=1.0mA .
VcE =1V,lc=10mA
·VcE =2V, Ic=150mA
·VcE =2V, Ic=500mA
Ic=150mA,ls=15mA
Ic=500mA, Is=50mA
Ic=150mA,IB=15mA
Ic=500mA, Is=50mA
Ic =20mA, VcE =10V
f=100MHz
VCB =1.0V, IE=O
f=140kHz
Vcc=30V, VBE=2V
Ic=150mA,IB,=15mA
Vcc=30V, Ic= 150mA
Is, :"ls2 = 15mA

1. Base 2. Emitter 3.

Min

Max

Collector

Unit

V

40
40
5
0.1
0.1
30
60
100·
100
20

V
V
iJA
iJA

300
0.4
0.75
0.95
1.3

0.75
200
I

V
·V
V
V
MHz

8.5

pF

35

ns

255

ns

··Pulse Test: Pulse Widths:.300/JS, Duty Cycle~2%

Marking

41

SAMSUNG SEMICONDUCTOR

541

•

MM,BT4403.

'PNPEPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

IiOO

Ir-

J

I~mt-VCE·_m

vee.

300

I-'

I~

r-....

Lam.·'··"·.

1=
8
jlO

3;
1 _

3

5

10

30 50

100

300 500 1000

1~0~~02~~04~~~~~M~~I~n~~I.~2~

Ie (mAl, COUECIOR CURRENT

VIE (VI,IIA8E-EMmER VOLTAGE

BASE-EMmER SATURATION VOLTAGE
. COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT

10

1000

r-

I-- vcr-nil

V

1c.1OJa

I\..

(sat)

V
ee(sat)

5

3

1

0,01

3

5

10

30 50

100

300 500

1000

Ie (mAl, COI.LEC1OR,cuRRENT

1

3

5

10

30 50

100

300 500

1000

Ie (mA), COUECIOR CURRENT

COLLECTOR-BASE CAPACITANCE

50

1---!:!4OKH
r------"'.O

30

I·r--

t-

~

8

5

3

1

5
10
30
50
Vea (VI, COLLECIOR-IIASE VOL1lIQE .

.c8

SAUSUNG SEMiCoNDUCTOR

100

542

PNP EPITAXIAL SILICON TRANSISTOR

MMBT5086
LOW NOISE TRANSISTOR

50T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltape
Emitter-Base Voltage
Collector Current
. Collec::tor Dissipation
Storage Temperature

Symbol
VCBO
VCEO .
VEBO
Ic
Pc
Tstg

Rating

Unit

50
50
3
50
350
150

V
V
V
mA
mW
o.C

ELECTRICAL CHA.RACTERISTICS (Ta= 25 0 C)
Characteristic

! Collector-Base Breakdown Volt;:tge
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain

Symbol
BVCBO
BVcEo
ICBO
hFE

Collector-Emitter Saturation Vollage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product

fr

Output Capacitance

Cob

Noise Figure

NF

VCE (sat)
VBE (sat)

Test Condition
Ic=100",A,IE=0
Ic=1mA, IB=O
VcB =35V, IE=O
VcE =5V, Ic =100",A
VcE =5V, Ic= 1 mA
VcE =5V,lc=10mA
Ic=10mA,IB=1mA
Ic=10mA,IB=1mA
Ic =500",A. VcE =5V
f=20MHz
VcB =5V, IE=O
f=100kHz
Ic= 1 OO",A, VcE =5V
f=1KHz, Rs=3KO

1. Base 2. Emitter 3. Collector

Min

Unit

Max

V
V
nA

50
50
150
150
150

50
500

Q.3
0.85
40

,

V
V
MHz

4

pF

3

dB

Marking

c8

SAMSUNG SEMICONDUCTOR

.543.

I

MMBT5086 .

PNP EPITAXIAL SILICON TRANSISTOR
BASE-EMITTER ON VOLTAGE

DC CURRENT GAIN
1000

100

-

IlOO

300

Vee_

-~

50

~T5 087

M Br5

30

8

-

f-Vce-5

.L

L
I

1

0.1
0.1

CI.3 0.5

30 50

3510

100

os

0.4

0.2

• Ie (IlIA), COLLECIOR CURRENT

1.0

1.2

VIE 1Vl,IIA8E-EilITTER VOLTAGE

BASE-EMITTER SATURATION VOLTAGE
COLLEcroil-EMITTER SATURATION VOLTAGE

CURRENT GAIN BANDWIDTH p~licr
1000

I---

Vee_

I---

V

1c-1P'~

I

~

Vae sat)

t=====

VeE (sat)

3

0.01

1

0.1

3 . 5

CI.3 0.5

10

30 50

Ie (IlIA), COLLECIOR CURRENT

100

0.1

0.3 0.5

3

6

10

30 60

100

Ie (InA), COLLECTOR CURRENT

OUTPUT CAPACITANCE
12

!

r-1-1~~Z
IE_(

10

'"
2

0

t-....

r-.

-10

30

50

100

Vee 1Vl, COLLECIOA-BASE VOLTAGE

-c8

SAMSUNG SEMICONDUCI"OR

544

MMBT5087

PNP EPITAXIAL SILICON TRANSISTOR

LOW NOISE TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Coliector-Base Voltage
Coliector-Emitter Voltage
Emitter-Base Voltage
Coliector Current
Coli ector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

50
50
3
50
350
150

V
V
V
mA
mW
°C

• Refer to MMBT5086 for graphs

ELECTRICAL CHARACTERISTICS (Ta= 25 0 C)
Characteristic

Symbol

1. Base 2. Emitter 3. Collector

Test Condition

Min

Ic= 1 OO"A, IE=O
Ir =1 OmA. 10=0
VcB =35V, IE=O
V~"=bV, I~= lUO"A
VcE =5V, Ic= 1.0mA
VcE =5V, Ic=10mA
Ic=10mA, IB=1.0mA
Ic=10'mA, IB=1.0mA
Ic=500"A. VCE=bV
f=20MHz
VcB =5V, IE=O
f=100kHz
VcE =5V, Ic=20mA
Rs =10K!}
f=10Hz to 15.7KHz
VcE =5V,lc=100"A
Rs =3K!}, f= 1 KHz

50
50

Max

Unit

I

Coliector-Base Breakdown Voltage
Coliector-Emitter Breakdown Voltage
Coliector Cutoff Current
DC Current Gain

BVcBO
BVcEo
ICBO
hFE

Coliector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth' Product

VCE (sat)
VBE (sat)
fT

Output Capacitance

Cob

Noise Figure

NF.

250
250
250

50
800

0.3
0.85
40

V
V
nA

V
V
MHz

4.0

pF

2

dB

2

dB

Marking

c8

SAMSUNG SEMICONDUCTOR

545

I

I

MMBT5088,

. NPN EPITAXIAL SILICON TRANSISTOR

LOW NOISE TRANSISTOR
ABSOLUTE MAXIMUM .RATINGS (Ta = 25°-C)
Characteristic
Collector-Base Voitage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector. Dissipation
Storage. TemperatlMe

Symbol
• VCBO
VCEO
VEBO
Ic
Pc
Tstg

,

Rating

Unit

35
30
4.5
50
350
150

V
V
V
rnA
mW
°C

ELECTRICAL CHARACTERISTICS (Ta= 25 0 C)
! "

Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

BVcBo
BVCEO
ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product

VCE (sat)
VBE (sat)
fT

Collector Base Capacitance

Ccb

Noise Figure

NF

1. Base 2. Emitter 3 Collector

Test Condition

Min

Ic';100!'A. IE=O
Ir'O=1mA.lo=0
VcB =20V, IE=O
VBE=JV, Ic=U
VcE =5V, Ic= 1 OO~
VcE =5V, Ic'" 1 rnA
VCE=5V. Ic'" 1 OmA
Ic=10mA,IB"'1.0mA
Ic=10mA.IB=1.0mA
Ic"'500!,A, VcE =5V
f"'20MHz
VCB=5V. IE=Q
f=100kHz
Ic= 1 OO!,A, VcE =5V
Rs= I", KII
, f"'1 OHz to 15.7KHz

35
30

300
350
300

Max

50
50
900

0.5
0.8
50

Unit
V
V
nA
nA

V
V
MHz

4

. pF

3

dB

Marking

c8 ~AMSUNGSEMICONDUcroR

546

MMBT5088

NPNEPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

~~~II~';lm~'11
f-

~300

1000

CURRENT GAIN BANDWIDTH PRODUCT

VCE=~V

b~
1000

..~300

i

!3

~ -VcE_5V

i-""'"

100

50
30

,1:
10

~

1

0.1

~

i~

~
£

3

1

100

•

11

r--

r-- f-ce~ IJ1~JH~

Ic=101B

Il
~

5r--

II

VB'

(sat)

4

11,,~q

I

C:tr;!~HZ

,

'1"i".

OS

0.3

!!I
>
10.05 t=
O. 1

2
VCE(sat)~

"" "

i'"

........

f"'-..

1

~ 0.03

>

~

Cob
I I

J1

-

1

1

0.01

0.1

0.3 OS

3

5

10

30 50

Ie (mI.), COLLECIOR CURRENT

c8

3050

OUTPUT CAPACITANCE
COLLECTOR·BASE CAPAOITANCE

10

z
2

10

Ie (mA), COLLECTOR CURRENT

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

'"~

35

0.3 0.5

10 (mA), COLLECIOR CURRENT

SAMSUNG SEMICONDUCTOR

100

10

30

50

100

200

Yea M, COLLECIOR BASE VOLTAGE

547

MM8T5088.

. NPN EPITAXIAL. SILICON TRANSISTO.R.
.

DC CURRENT GAIN
1000

CURRENT GAIN BANDWIDTH PRODUCT
000

1= Vc,=5V

500
300

300

V

ZI00

3 .

iG :

50

30

H

i

10

5

I
0.1

o.s o.s

III

III
1

3

5

10

30 60

.
100

Ie (mAl. COLLECIOR CURRENT

,

11111
0.1

0.3 0.5

11111
, 3

5

10

Jill
30 50

100

Ie (mAl, COLLl!CTOA CURRENT

NOISE FIGURE
10

VCE_SV

f.10Hz:

f---~~ ~~'\.~ \,'\.

~

\I"

1

.......... r--

\

i\

t""'-

1

........
1'---,
0.1

O.3o.s
Ie

'18 SA~~UNG

1

3510

3050

100

(mAl. COLLECTOR CURRENT

SEMICONDUCTOR

<548'
;,
~'" ~.

·,t,,:(:U~

MMBT5089

NPN , EPITAXIAL SILICON TRANSISTOR.

.

LOW NOISE TRANSISTOR·
S01-23

ABSOLUTE MAXIMUM RATINGS·(Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

30
25
4.5
50
350
150

V
V
V
mA
mW
°C

• Refer b MMBT5088 for graphs
Base 2

1

Emitter 3

Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 ° C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

BVCBO
BVcEo
ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gait:1-Banciwidth Product

VCE (sat)
VBE (sat)
fT

Collector Base Capacitance

Ccb

Noise Figure

NF

Test Condition

Min

Ic= 1 OO!,A, IE=O
Ic=1.0mA, IB=O
VCB = 15V, IE=O
VBE =4.5V, Ic=O
VcE =5V,lc=100!,A
VCE=5V,lc=lmA
VcE =5V,l o=10mA
Ic=10mA, IB=1.0mA
Ic=10mA.IB=1.0ruA
Ic=500!,A. Vcc=5V
f=20MHz
VcB =5.0V, IE=O
f=100kHz
Ic=100!,A, Vc~=5V
Rs=10K!?
f=10Hz to 15.7KHz

30
25

400
450
400

Max

50
100
1200

0.5
0.8
50

Unit
V
V
nA
nA

V
V
MHz

4

pF

2

dB

Marking

c8

SAMSUNG SEMICONDUCTOR

549

,

- • ..rt, .....

PNP EPITAXIAL SILICON TRANSISTOR

"

HIGH VOLTAGE TRAN'SISTOR

SOT-23.

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
,
·Characteristic
Collector-Base Voltage
Collector-Emi.tter Voltage
Emitter-Base Voltage
Collector Current
..
Collector Dissipation
Storage Temperature

Sym~1
Vceo
VCEO
VEBO
Ic
Pc
Tstg

Ra.tlng

Unit

160
150
5
500
350
150

V
V
V
mA
mW
°C

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain

Symbol
BVcBO
BVcEo
BVEeo
ICBO
hFE

Collector-Emitter Saturation Voltage

Vcdsat)

Base-Emitter Saturation Voltage

VBE (sat)

Current Gain-Bandwidth Product

IT

Output Capacitance

Cob

Noise Figure

NF

1. Base 2. Emitter 3. Collector

Test Condition

Min

Ic=100Io'A,IE=0
Ic=1.0mA,le=0
IE= 1OIo'A, Ic=O
Vce=100V,IE=0
VcE =5V, Ic=1.0mA
VcE =5V,lc=10mA
VcE =5V, Ic=50mA
Ic=10mA, le=1 OmA
Ic=50mA, le= 5mA
Ic =10mA,IB=1.umA
Ic=50mA, la=5mA
Ic=10mA, VcE =10V
f=10DMHz
Vce=1DV, Ie=D
f=;1.0MHz
VcE =5V, Ic=2DDIo'A
Rs= 100
. f= WHz to 15.7KHz

160
150
5

Max

50
50
60
50

100

Unit
V
V
V
nA

240
0.2
0.5
10
1.0
300

V
V
V
V
MHz

6.0

pF

8.C

dB

Marking

c8

SAMSUNG SEMICONDUCTOR

5~O
.

~:,,:

MMBT5401

PNP EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

BASE-EMITTER ON VOLTAGE
1000

1000

500

500

f-- -V",,_5V

300

-

~VcE_5V

300

I

~

!Z

II!IE
il

8

i

"

100

50

30

10
3

5

10

30 50

100

300 500

1000

0.2

0.6

D.8

1.0

1.2

VI! M, BASE·EMITTER VOLTAGE

Ie (mAl, COLLECI'OR CURReNT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT
10

f - - f-VCE_1OV

3

W

!g

,....
I'-...

ag

.!

1-1<-10.18

=r=

~

Ii
IE

=--

0..5

Jl~"11

--

0..3

-

V

0..1

,-=t=

~

VCE(Sat)

...:: 0..05

10..03
~

0..01

3

5

10

30 50

100

300 500 1000

Ie (mAl, COLLECTOR CURRENT .

3

5

10

30 50

100

300 500

1000

.

Ie (mAl, COLLECI'OR CURReNT

OUTPUT CAPACITANCE
24

I-----

r-...

'\

,.J.../.
IE_O

1'\

1'-

'"
5 '

10

....
30

50

100

Vea M, COUECTOR BASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

551

MMBT.S5SO·

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

160
140
6
600
350
150

V
V
V
mA
mW
°C

ELECTRICAL_ CHARACTERISTICS ("Fa =25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current .
Emitter Cutoff Current
DC Current Gain

Symbol
BVcBO
BVcEo
BVEBo
ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage

VBE (sat)

Current Gain-Bandwidth Product

h

Output Capacitance

Cob

1. Base 2. Emitter 3

Test Condition

Min

Ic= 1 O/.iA, IE=O
Ic =1mA,·IB=0
1.=10!,A. 1r.=0 .
VCB = 1 OOV, IE=O
. V.B=4V, Ic=O
VcE =5V, Ic=1.0mA
VcE =5V, Ic= 1 OmA
VcE=5V, Ic=50mA
Ic=10mA,IB=1mA
Ic=50mA, IB=5mA
Ic =10mA, IB.=1mA
Ic=50mA, IB=5mA
Ic=10mA, VcE =10V
f=100MHz
VcB =10V, IE=O
f=1.0MHz

160
140
6

60
60
20

100

Collector

Max

Unit

100
50

V
V
V
nA
nA

,

250
0.15
0.25
1.0
1.2
300
6.0

V
V
V
V
MHz
pF

Marking

c8

SAMSUNG SEMICONDUCTOR

552

MMBT5550

NPN EPITAXIAL SILICON TRANSISTOR
BASE·EMITTER ON VOLTAGE

DC CURRENT GAIN
1000

'000

-

500

500 .~ I-Yce-SY

Vce_SV

300

300

I

~

1

0

I

0.

3

31
I

1

1
3

5

10.

30 50

100

1000

300

M

~

M

M

W

U

v.. (V), BASE-EMITTER ~TAGE

I, (mAl, COLLECIOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

CURRENT GAIN·BANDWIDTH PRODUCT
10.
I

f-- -10.10.10

~

3

!:l

i

z

~

1

a
"

JJ.I(..,1

'~

0..5
0..3

£-

V-

10.1

ee(..,

~

..:: o.os

1003
i

0..01

3050

3510.

100

300 .....'

1000

3

5

10

30 50

100

300 500. 1000

Ie (mAl, COLLECIOR CURRENT

Ie (mAl, COLLECTOR CURRENT

OUTPUT CAPACITANCE

J

12Ir----

I---

- -

10.

I
~

--

f-1M~z
IE-O

t-J

t---- t-.

~.
6

"

1

S --

---

i"o..

...........
~r--

2

0. I

-+

1

10.

30

-

50

100

Yea (V), COI.LEClOR BASE ~LTAGE

c8

SAMSUNG SEMICONQUCTOR

553

,MMBT6427,

'NPN EPITAXIAL SILICON TRANSistOR

,DARLINGTON 'TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-~e Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

VC80
VCEO
VEBO
Ic ,
Pc
Tstg

Rating

Unit

40
40
,12
500
350
150

V
V
V
mA
mW
°C

"

'ELECTRICAL CHARACTER'ISTICS (Ta= 25 ° C)

·\' .
,

1. Base 2. Emitter 3. Collector

~.

Characteristic

!

"

'

Collector-Base Breakdown Voltage
ColI~ctor-Emitter Breakdown, Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Symbol
BVcBo
BVCEO
BVEBo
ICB9
ICEO
' lEBO
hFE

Collector-Emitter Saturation Voltage

VCE (sat)

Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance

VBE (sat)
VBE (on)
Cob>

Noise Figure

NF

Test Condition
Ic=100!,A,IE=0
Ic= I UmA, iB=U
IE= 1 O!,A, Ic'=O
VcB=30V, IE=O
VcE =25V, 'B=O
VBE =10V, 10=0
VcE =5V, Ic=10mA
VcE =5V,lc=100mA
VcE =5V, Ic=500mA
Ic=50mA IB=0,5mA
Ic=500mA, IB=U,bmA
Ic=500mA, 'B=0.5mA
Ic=50mA, VCE=5V
VCB = 1 OV, IE=O
f=1MHz:
Ic=1mA, VcE =5V
Rs=100KO
f=1KHz to 15,7KHz

Min

Max

40
40
12

10,000
20,000
14,000

50
1
50
100,000
200,000
140,000
' 1,2
1,5
2.0
1.75
7
10

Unit
V
V
V
nA
!,A
nA

V
V
V
V
pF
dB

Marking

..

c8

SAMSUNG SEMICONDUCTOR

~

,554

"'.

MMBT6427

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

CURRENT GAlN·BANDWIDTH PRODUCT
1000

1=-VtJ£_SV

I

10
3

5

10

30 50

100

10

·300 500 1000

BASE-EMITTER SATURATION VOLTAGE
.
COLLECTOR·EMITTER SATURATION VOLTAGE
10

100

le- 1000iB

:

i--

1

50

100

BASE-EMITTER ON VOLTAGE
200

Vae(sat)

30

Ie (mA). COLLECIOR CURRENT

Ie (mA). COLLEcroA CURRENT

==LL

_f!

VeE (s.,)

I

II

0.1
10

30

50

Ie (mA). COI.LECIOR CURRENT

c8

I

I

100

SAMSUNG SEMICONDUCTOR

300

o

0.2

o.s

1.0

1.4

1.8

2.2

2.8

VIa (VI. BASE-EMITTER VOLTAGE

·555

','

NPN EPIT4XIAL SILICON TRA~SISTOR

MMBT6428,
AMPLIFIER TRANSISTo.R

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Col.lector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating
60
50
6
200
350
150

Unit
V
V
V
mA
mW'
°C

• 'Refer to MMBT5088 for graphs
1. Base 2. Emitter 3. Collector .

ELECTRICAL CHARACTE.RISTICS (Ta= 25 ° C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Vortage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

BVcBO
BVcEO
ICBO
IcEo
lEBO
hFE

Collector-Emitter Saturation Voltage

Vcdsat)

Base-Emitter On Voltage
Current Gain-Bandwidth Product

fr

Output Capacitance .

Cob

VBE (on)

Test Condition

Min

Ic=0.1 mA, 1.=0
. Ic=1.0mA, IB=O
VCB=30V, IE=O
VCE=30V, I~=O
. VEB=5.0V, Ic=O
VCE=5V, Ic=0.01 mA
VCE=5V, Ic=0.1 mA
VCE=5V, Ic=1.0mA
VCE=5V,lc=10mA
Ic= 1 OmA, IB=0.5mA
Ic=100mA,IB=5mA
Ic=1 mA, VcE =5V
Ic= 1.UlllA, Vc.=5V
f=iOOMHz
VcB =10V, 1£=0
f=1.0MHz

60
50

250
250
250
250

0.56
100

Max

Unit

0.01
0.1
0.01

V,
V
JJ.A
JJ.A
JJ.A

650

0.2
0.6
0.66
700

V
V
V
MHz

3

pF

Marking

.~
.c8

SAMSUNG SEMICONDUCTOR

.

MMBT6429

NP.N EPITAXIAL· SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
80T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitt~~-Base Voltage
C:ollector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO'
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

55
45
6
200
350
150

V
V'
V
mA
mW
·C

• Refer to MMBT5088 for graphs
1. Base 2. Emitter 3. ColIl?ctor

ELECTRICAL CHARACTERISTICS (Ta =25 ° C)
Characteristic .
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance

Symbol
BVcBo
BVcEo
ICBO
IcEo
lEBO
hFE

VCE (sat)
. VBE.(on)

.fr
Cob

Test Condition
Ic=O.l mA, IE=O
Ic=1.0mA, IB=O
VcB=30V, IE=O
VcE =30V, IB=O
VEB =5.0V, Ic=O
VcE =5V, Ic=O.Ol mA
VcE =5V, Ic=O.l mA
VcE =5V, Ic=1.0mA
VcE =5V,lc=10mA
Ic=10mA, IB=0.5mA
1,,=100mA,IB=5mA
Ic=lmA, VcE =5V
Ic=1.0mA, VcE =5V
f=100MHz
VcB=10V,IE=0
f=1.0MHz

Min

Max

Unit

0.01
0.1
0.01

V
V
JAA
JAA
JAA

55
45

500
500
500
50d

0.56
100

1250

0.2
0.6
0.66
700
3

V

V
V
MHz
pF

Marking

c8

SAMSUNG SEMICONDUCTOR

557

••

NPN ·EPITAXIAL SILICON TRANSISTOR

.MMBTA06,···
",

.... , ' i ,

,'.

'"

DRIVER TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (max)
Collector Dissipation
Storage' Temperature
Thermal Resistance Junction to Ambient

VCBO
VCEO
VEBO
Ie
Pc
Tstg
RthU-a)

Rating
60
60

4
500
350.
150
357

Unit
V
V
V
mA
mW
°C

..

°CIW

• Refer to MPSA05 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta~25°C)
Characteristic
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

Symbol
BVcEo
BVEBO
ICBO
IcEo
hFE

Test Condition
"'I

VCE (sat)
VBE (on)

fr

Min

Ic= 1 mA, 'B=O
IE= 1 OO/AA, Ic=O
VcB=60V, IE=O
VcE =60V, IB=O
VcE =1V,lc ;"10mA
VcE =1V,lc =100mA
Ic=100mA,IB=10mA
VcE =1V,lc=100mA
VCE~2V, Ic=10mA, f=100MHz

Max

Unit

0.1
0.1

V
V
/AA
/AA

0.25
1.2

V

60

4

50
50

100

V
MHz

* Pulse Test: PW;S;300/As, Duty Cycle:S2%

Marking

c8

. '....

.

. '

. .

SAMSUNG SEMICONDUCTOR

558

MMBTA06

NPN EPITAXIAL SILICON TRANSISTOR

DRIVER TRANSISTOR
50T-23

ABSOLUTE MAXIMUIYI RATINGS (Ta=25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage .
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Thermal ReSistance Junction to Ambient

VCBO
VCEO
VEBO
Ic
Pc
Tstg
Rth(j al

Rating
80
80

4
500
350
150
357

Unit
V
V
V
mA
mW
°C

°C/W

• Refer to MPSA05 for graphs
1. Base 2

EmItter 3

Collector

ELECTRICAL CHARACTERISTICS (Ta= 25°C)
Characteristic
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

Symbol
BVcEo
BVEBO
IcBO
ICEo
hFE
VCE (sat)
VBE (on)

fr

Test Condition

Min

Ic=1mA,18=0
IE=100"A,lc=0
Vce=80V, IE=O
VcE =60V, 18=0
VCE = 1V, Ic= 1 OmA
VcE =1V,lc =100mA
Ic= 1 OOmA, 18= 1 OmA
VCE=1V,lc=100mA
VcE =2V, Ic=10mA, f=100MHz

Max

80

4
0.1
0. 1

Unit
V
V
I'A
I'A

50
50
0.25
1.2
100

V
V
MHz.

• Pulse Test P~5300I's, Duty Cycle~2%

Marking

.c8

SAMSUNG SEMICONDUCTOR

559

MMBTAt3

NPN EPITAXIAL SILICON TRANSISTOR

DARLINGTON AMPLIFIER TRANSISTOR
80T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collect!:lr-Emitter. Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
Vceo
VCES
VEeo
Ie
Pc
Tstg

Rating

Unit

30
30
10
300
350
150

V
V

V
mA
mW
.oC

• Refer to MMBT6427 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Cur(ent
DC Current Gain

Ie CES
ICBO
lEBO
hFE

Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

VCE (sat)
VeE

fr

Test Condition
Ic=100,..A, le=O
Vce=30V, IE:=O
VEe=10V,lc=0
VcE =5V, Ic=10mA
VcE =5V,lc =100mA
Ic=100mA, le=O 1mA
Ic=100mA, VcE =5V
Ic=10mA, VcE =5V
f=100MHz

Min

Max

Unit

100
100

V
nA
nA

30

5,000
10,000
1.5
2.0
125

V
V
MHz

Marking

c8

SAMSUNG SEMICONDUCTOR

560

MMBTA14

NPN EPITAXIAL 'SILICON TRANSISTOR

DARLINGTON AMPLIFIER TRANSISTOR
SOT·23 .

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector· Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCES
VEao
Ic
Pc
Tstg

Rating

Unit

30
30
10
300
350
160

V
V
V
mA
mW
°C

• Refer to MMBT6427 for graphs

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 ° C)
Characteristic

Symbol

Collector· Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

BVcEs
leBO
lEaD
hFE

Collector· Emitter Saturation Voltage
Base·Emitter On Voltage
Current Gain·Bandwidth Product

VCE (sat)
VeE

1r

Test Condition
le=100,..A, la=O
Vca=30V, IE=O
VEa=10V, le=O
VoE =5V, 10=10mA
VcE =5V, Ic=100mA
Ic=100mA,la=0.1mA
Ic=100mA, VCE=5V
Ic=10mA, VcE=5V
f;=100MHz

Min

Max

Unit

100
100

V
nA
nA

30

10,000
20,000
1.5
2.0
125

V
V
MHz

Marking

c8

SAMSUNGSEMICONDUCTOR

561

NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSI~TOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Emitter Voltage
Emitter.-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

40
4
100
350
150

V
V
mA
mW
°C

• Refer to MMBT3904 for graphs

ELECTRICAL CHARACTERISTICS (Ta= 25°C)

1 Base 2

Characteristic

Symbol

Test Condition

Min

Collector-Emitter Breakddwn Voltage
Emitter-Base Breakdown Voltage
Cdllector Cutoff. Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product

BVcEo
BVEBo
ICBO
hFE
Vc.(sat)

40
4

IT

Output Capacitance.

Cob

k=1.0mA, IB=O
IE= 1OOIAA, Ic=O
VcB =30V, IE=O
VcE=fOV, Ic=5mA
Ic=10mA: la=1.0mA
Ic =50inA, VcE =10V
1=100MHz
VCB = 1 OV, IE=O
1=100KHz

40

SAMSUNG SEMICONDUCI"OR

Max

100
400
0.25

125
4

Marking

,c8

Emitter 3. Collector

Unit
V
V
nA
V
MHz
pF

NPN EPITAXIAL S~LlCON TRANSISTOR

MMBTA42

HIGH VOLTAGE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

VCBO
VCEO
VEBO
Ie
Pc
Tstg
RthU-a)

Rating

Unit

300
300
6
500
350
150
357

V
V
V
mA
mW
°C
°C/W

1 Base 2 Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain

BVeBO
BVeEo
BVEBO
leBO
lEBO
hFE

• Collector-Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Current Gain-Bandwidt.h Product
Collector-Base Capacitance

VeE (sat)
VSE (sat)

fr
Ccb

Min

Test Condition
le= 1 OO",A, IE=O
Ic=1mA,le=0
IE= 1 OO",A, le=O
Vce=200V, 'E=O
VeE =6V, le=O
VCE=10V,lc=1mA
VcE =10V,lc =10mA
VCE = 1 OV, Ic=30mA
le=20mA, le=2mA
'c=20mA, le=2mA
VeE =20V,.le=10mA, f=100MHz
Vee =20V, IE=O, f=1MHz

Max

Unit
V
V

300
300
6

V
0.1
0.1

",A
",A

0.5
0.9

V
V
MHz
pF

25
40
40

50
3

• Pulse Test: PW:S:300",s, Duty Cycle:S:2%

Marking

c8

SAMSUNG SEMICONDUCTOR

563

•

MMBTA43
?

NPN·

EPITAX'A~

SILICON TRAN,SISTOR,

•

HIGH VOLTAGE TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta-=25°C)
Characteristic
Collector-Base Volta!)e
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tstg

Rating

Unit

200
200.
6
500
350
150

V
V
V
mA
mW
°C

ELECTRICAL CHARACTERISTICS (Ta = 25° C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain

BVcBO
BVcEo
BVEBo
ICBO
lEBO
hFE

• Collector-Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product

VCE (sat)
VeE (sat)

Collector-Base Capacitance

fr

I Ccb

1. Base 2

Test Condition

Min

Ic= 1 OO,..A.IE=O
Ic=lmA,IB=O
IE=lQO,..A,.Jc=O
Vce= 160V, IE=O
VEe =4V, Ic=O
VCE=10V,lc=lmA
VcE =10V,l c =10mA
VcE =10V,l c =30mA
Ic=20mA, le=2mA
Ic=20mA, le"'2mA
Ic"'10mA, VcE =20V
f=100MHz
Vca "'20V, IE"'O
f=lMHz

200
200
6

Emitter 3

Collector

Max

Unit

100
100

V
V
V
nA
nA

2S
40
40

0.5
0.9
50'
4

V
V
MHz
pF

• Pulse Test: Pulse Width~300!As, Duty CycleS;2%

Marking

c8

SAMSUNG SEMICONDUCTOR

.564. .1

MMBTA43

NPN EPITAXIAL SILICON TRANSIsToR
DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT

1000~~.
aoo

I

SOOf--VeE_

VeE_2tN

Ifoo~iI
:t------r.~__+____++_+++++_+_+__+_++++H

V

8

1

10

_

_

/'

r\

'"

oI
3

5

10

30

50

100

3510

Ie (mA), CCILLECIOR CURRENT

3050

100

Ie (mA~ COUECIOR CIIRIIENT

, COLLECTOR-EMITTER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
10

•

COLLECTOR-BASE CAPACITANCE
100

-

-

II
=====

=

-IE-O

I-tc_101B
30

'_1MHz

~ EJJ(IIII)

r-.... ....
=

1/ ....

~ VeE (lid)

..........

3

5

10

30

50

100

300

0.1

o.s

0.5

35

10

3050

100

Ie (mAl, COLLECIOII~

'4

"

SAMSUNG SEMICONDUCTOR

565

.MMSTAS.5·

PNP EPITAXIAL
SILICON TRANSISfOR
.
.
, .

'

:

DRIVER TRANSISTOR
80T-23

·ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
.Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

Symbol

Rating

Vcso
VCEO
VEBO
Ic
Pc
Tstg
RthIJ·a)

-60
-60

-4
-500
350

150
357

Unit
V
V

V
mA
mW
°C .
°C/W

• Refer to MPSA55 for graphs
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 OC)
Symbol

Characteristic
·Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

,

BVcEo
BVEBO
ICBO
ICED
hFE
VCE (sat)
VaE (on)

fr

',; ,

Test Condition

Min

Ic= -1 mA, Is=O
IE=-100,.,A, Ic=O
Vca=-60V, IE=O
VCE= -60V, la=O
VCE=-1V, Ic=-10mA
VcE =-1V, Ic =-100mA
Ic=-100mA,la=-10mA
VcE=-1V, Ic=-100mA
VcE =-1V, Ic=-100mA, f=100MHz

-60

Max

Unit

. -0.1
-0.1

V
V
,.,A
/AA

-4
50
50

-0.25
-1.2
50

V
V
MHz

• PulseTest: PW5300/As, Duty Cycle.s:2%

Marking

~
=8
·

.

.

SAMSUNG SEMICONDUCTOR

-";',
I'"~

MMBTA56

PNP EPITAXIAL SILICON TRANSISTOR

DRIVER TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tstg
Rth(j-a)

-80
-80

V
V
V
mA
mW
°C

-4
-500
350.
150
357

°CIW

• Refer to MPSA55 for graphs
1. Base 2 Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 °C)
SymbOl

Characteristic
'CoIlector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collectl?r-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-aandwidth Product
• Pulse Test: PW5300/As, Duty

BVcEo
BVeeo
ICBO
ICEO
hFE
VCE (sat)
VBE (on)

h

Test Condition

Min

Ic=-1 mA, IB=O
IE=-100/AA,lc =0
VcB=-80V, IE=O
VcE =-60V, IB=O
VcE =-1V,lc =-10mA
VCE=-1V, Ic =-100mA
Ic =-100mA,IB=-10mA
VcE =-1V,lc =-100mA
VCE=-1V, Ic=-100mA, f=100MHz

-80

Max

Unit

V

-4
-0.1
. -0.1.

V
/AA
/AA

50
50
-0.25
-1.2
50

V
V
MHz

Cycle~2%

Marking

qs

SAMSUNG SEMICONDUCTOR

567

•

MI\tlBTA63

PNP EPITAXIAL SILICON' TRANSISTOR

DARLINGTON TRANSISTOR

80T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current··
Collector Dissipation
Storage Temperature

Symbol
VCBO
VeEs
VEBO
Ic
Pc
Tstg

Rating

Unit

30
30
10
500
350
150

V
V
V
mA
mW
°C

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic
Collector-Emitter Breakdown Voltage.
· Collector Cutoff Current
Emitter Cutoff Current
• DC .Current Gain
Col/ector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

Symbol
BVcEs
ICBO
lEBO
hFE
VCE (sat)
VBE (on)

fr

Test Condition
Ic=100"A 18=0
VcB =30V, 18=0
VBE = 1OV, I~=O
VcE =5V, Ic= 1 OmA
Vc.=5V,lc =100mA
Ic ";'100mA,I R =0.1mA
Ic= 1 OOmA. VeE =5V
Ic=10mA, Vct =50V
f=100MHz

1. Base 2. Emitter 3. Colleetor

Min

Max

Unit

100
100

V
nA
nA

30

5,000
10,000
1.5
2
125

V
V
MHz

• Pulse Test: Pulse Width~300"s, Duty Cycle~2%

Marking

c8

SAMSUNG SEMICONDUCTOR

568

PNP EPITAXIAL silicON TRANSISTOR

MMBTA63
DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT

1000K
500KI-· .

VCE_SV

300Kt--

1--K

KF
K

I,...K
K

K

3

5

10

30 50

100

300 500 1000

3

Ie (mA). COLLECI'OR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

5

10
30 50 100
300.500 1000
Ie (mA). COLLECI'OR CURRENT

•

BASE EMITTER ON VOLTAGE

10

I--

le-10001.

100

I- I-lIeE-5v
VE(sat)

J

VeE (sat)

II

i
1

I

I
,

1

3

5

10

30 50

100

300 500 1000

Ie (mA). COLLECI'OR CURRENT

c8

SAMSUNG SEMICONDUCTOR

o

0.4

o.a

1.2

1.6

2.2

2.6

V,.(V), BASE-EMIT1EII VOLTAGE

569

MMBTA64

PNPEPITAXIAL SILICON TRANSISTOR

DARLINGTON TRANSISTOR

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
. Collector Current
Collector Dissipation.
Storage Temperature

SymbOl
VCBO
VeEs
VEBO
Ie
Pc
Tstg

Rating

Unit

'30
30
10
500
350
150

V
V
V
mA
mW
°C

• Refer to MMBTA63 for graphs

ELECTRICAL CHAPoACTERISTICS (Ta =25°C)

,"i,

~",.

'

.

"

1. Base 2. Emitter 3. Collector

':

Characteristic
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product

Symbol

Test Condition

BVcEs
ICBO
lEBO
hFE

Ic= 1 OOI.lA,IB=O
VcB =30V, IE=O
VBE =10V,lc=0
VcE =5V',l c =10mA
VcE =5V,lc=100mA
Ic=100mA,I A=0.1mA·
Ic=100mA VeE =5V
Ic=10mA, VeE =50V
f=100MHz

VCE (sat)
VBE (on)

h

Min

Max

Unit

100
100

V
nA
nA

30

10,000
20,000
1.5
2
125

V
V
MHz

'Pulse Test: Pulse WidthS300jJs, Duly Cycle~2%

Marking ' .

.c8

SAMSUNG SEMICONDUCTOR
I

.

570

MMBTA70

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature

Symbol
VCEO
VESO
Ic
Pc
Tstg

Rating

Unit

40
4
100
350'
t50

V
V
mA
mW
°C

• Refer to MMBT5086 for graphs

ELECTRICAL' CHARACTERISTICS (Ta ::; 25 ° C)
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
. DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance

1. Base 2. Emitter 3. Collector

Symbol

Test Condition

Min

BVcEo
BVEBO
Icso
hFE
VCE (sat)

Ic= 1.0mA. Is=O
IE= 1 OOJlA. Ic=O
Vcs=30V. IE=O
VCE=10V.lc=5.0mA
-lc=10mA.ls=1.0mA
Ic=5.0mA. VCE = 1 OV
f=100MHz
Vcs= 1OV. IE=O
f=100KHz

40
4

h
Cob

40

Max

100
400
0.25

125
4.0

Unit
V
V
nA
V
MHz
pF

lIiIarking

c8

SAMSUNG SEMICONDUCTOR

571,

MMBTA92

-',

.;,'

PNP ·EPITAXIAL SILICON TRANSISTOR

,."

HIGH VOLTAGE TRANSISTOR
50T-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C).·
Characteristic

Symbol

Rating

Unit

. Vceo
VCEO
VEBO

-300
-300
-5
-500
350
150
357

V
V
V
mA
mW
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base. Voltage
Collector Current
CollectOr Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

Ie
Pc
Tstg
Rth(j-a)

°CIW

• Refer to MPSA92/93 for graphs
1. Base 2. Emitter 11. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol

Characteristic
Collector-Base Breakdown Voltage
·CoIlector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
• DC Current Gain

• Collector-Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Collector-Base Capacitance
PW~300~,

• Pulse Test:

Duty

,

BVCBO
B\(cEo
BVEBQ
ICBO
lEBO

~
VCE (sat)
VBE (sat)

iT
Ccb

Test Condition

Min

Ic=-100jiA, IE=O
Ic=-1mA,le=0
IE=-100~A, Ic=O
Vce =-200V, IE=O
(
VBE =-3V, 1e=0
VcE =-10V,lc =-1mA
. VCE =-10V, Ic=-10mA
VCE=-10V,lc =-30mA
1e=-20mA,le=-2mA
Ic=-20mA, le=-2mA
VCE =-20V, Ic =-10mA, f=100MHz
Vce =-20V, IE=O, f=1MHz

-300
-300
-5

Max

Unit

-0.25
-0_1

V.
V
V
jiA
jAA.

25
40
25
-0_5
-0.9
50

6

V
V
MHz
pF

Cycle~2%

. Marking

...

"

ciS

.

"

'

,.,

SAMSUNG SEMICONDUCTOR

572

MMBTA93

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
,characteristic

Symbol

Collector-Base Voltage
Collector-Emitter "voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

VCBO
VCEO
VEBO
Ie
Pc
Tstg
Rth(J-al.

Rating

Unit

-200
-200
-5
-500
350
150
357

V
V
V
mA
mW
°C

°C/W

• Refer to MPSA92/93 for graphs
1. Base 2. Emitter 3

Collector

ELECTRICAL CHARACTER'ISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
,'Collector Cutoff Current
Emitter Cutoff Current
• DO Current Gain

BVcBO
BVcEo
BVEBO
leBO
lEBO
hFE

* Collector-Emitter Saturation Voltage·
• Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Collector-Base CapaCitance

VCE (sat)
VBE (sat)

fr
Ccb

Test Condition

Min

Ic= -1 OO,..A, IE=O
Ic =-1mA,IB=0
IE= -1 OO,..A, le=O
VcB =-160V,I E=0
VBE = -3V, le=O
VeE =-10V,lc =-1mA
VcE =-10V,lc =-10mA
VcE =-10V,le=-30mA
le=-20mA, IB=-2mA
le=-20mA, IB=-2mA
VcE=-20V, le=-10mA, f=100MHz
VcB =-20V, IE=O, f=1MHz

-200
-200
-5

Max

Unit

-0.25
-0.1

V
V
'V
,..A
,..A

25
40
25
-0.5
-0.9
50

'8

V
V
,MHz
pF

• Pulse Test: PW,S300,..s, Duty Cycle:!>2%

Marking

c8

SAMSUNG

SEMI~ONDUCTOR

573

•

NPNEPITAXIAL SILICON TRANSISTOR
VHF/UHF TRANSISTOR

SOT-23

. ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-BaSe Voltage
. Coliector'Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

Vcso
VCEO
VEBO
Pc
Tstg
RthU·a)

Rating

Unit

30
25
3
350
150
357

V
V
V
mW

·C
·CfW

• ReIer to MPSH1 0/11 lor graphs

ELECTRICAL CHARACTER,ISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product·
Collector-Base Capacitance
COrt)mon-Base Feedback Capacitance
Collector Base Time Constant

BVCBO
BVeEo
BYEso
ICBO
lEBO
hFE
VCE(sat)
VSE

h
Ccb
Grb
CC'rbb'

1. Base 2. Emitter 3. Collector

Min

Test Condition
Ic=100",A,IE=0
le= 1 mA, Is="O'
IE';'1O/AA, Ic=O
. Vcs=25V, IE=O
VeE =2V, 'le=O
VCE=10V,lc=4mA
Ic=4mA, le=O.4mA
VCE=10V,lc=4mA
VcE=10V, Ic=4mA, 1=100MHz
Vcs= 1 OV, 'IE=O, 1= 1 MHz
Vee = 1 OV; IE=9, 1= 1 MHz
Vee = 1 OV, Ic=4mA, f=31.8MHz

Max

30
25
3

Unit
V
V
V

100
.100

nA
nA

0,5
0.95

V

60

650
0.7
0.65
9

V
MHz
pF
pF
ps

Marking

~
ciS

SAMSUNG

SEMICOND~CTOR

5.74

MMBTH24

NPN EPITAXIAL SILICON TRANSISTOR

VHF MIXER TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
C911ector Current
Collector Dissipation
Storage Temperature
Thermal Resistance Junction to Ambient

VCBO
VCEO
VEBO
Ic
Pc
Tstg
Rth(j-aj

Rating
40
30
4

100
350
150
357

Unit
V
V
V
mA
mW
°C
°C/W

• Reier to MPSH24 for graphs.
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25° C)
Symbol

Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base' Breakdown Voltage
Collector Cutoff Current
DC Current Gain
• Current Gain-Bandwidth Product
Collector-Base Capacitance
Conversion Gain (213MHz to 45MHz)

BVcBO
BVcEo
BVEBO
IcBO
hFE

IT
Ccb
CG

(60MHz to 45MHz)
• Pulse Test:

PW~300,..s,

Duty

Min

Test Condition
Ic= 1 OO,..A, IE=O
Ic=1mA, Is=O
. IE=10,..A, Ic=O
Vcs= 15V, IE=O
VCE=10V,lc=8mA
VcE =10V, Ic=8mA
1=100MHz
Vcs=10V, IE=O, 1=1MHz
Ic=8mA,. Vcc=20V
Oscillator Injection = 150mV

Typ

Max

40
30
4
50

Unit
V
V
V
nA

30

400

MHz

620
0.25

0.36

19

24

pF
dB

24

29

dB

Cycle~2%

Marking

~
c8

SAMSUNG

SEMICONDUCT~R

.575

•

NPN EPITAXIAL SILICON TRANSISTOR

MPS2222

GENERAL PURPOSE TRANSISTOR
TO-92

• Collector-Emitter Voltage: VCEO =30V
• Collector Dissipation: Pc (max)=625mW .

ABSOLUTE MAXIMUM RATINGS (Ta ~25°C)
Characteristic

Symbol

Rating

Unit

VCBO
Vceo
VEBO
Ic
Pc
Tj
Tstg

60
30
5
600
625
150
-55-150.

V
V
V
mA
mW-

Collector-ease Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

OC
°C

1 Emitter 2. Base 3. Collector

ELECTRICAL CHARACTER,ISTICS (Ta =25°C)
Characteristic

~

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain

*Collector-Emitter Saturation Voltage
~Base-Emitter

Saturation Voltage

- Symbol
BVcBO
BVcEo
BVEBO
lcao
hFE

VCE(sat)
VBE (sat)

Output Capacitance
Current Gain Bandwidth Product

IT

Turn On Time

ton

Turn Off Time

toft

Cob

!

Test Conditi~ns
Ic =10,.A. IE =0
Ic=10mA.IB=0
IE =10,.A. Ic =0
VCB=50V,IE=0
Ic=0.1mA, VcE =10V
Ic =1mA, VCE =10V
, Ic =10mA. VCE =1OV
*Ic =150mA, VCE =10V
*Ic ="500mA, VeE =1OV
Ic=150mA,IB=15mA
Ic ';'500mA, IB =50mA
Ic =150mA,IB=15mA
Ic =500mA, IB =50mA
VCB=1OV,IE=O, f=1MHz
Ic=20mA, VCE =20V
f=100MHz
Vcc=30V, VBE=0.5V·
Ic =150mA,IB1 =15mA
Vcc=30V,lc=150mA
IBI =1 B2 =15mA

Min

Typ

Max

60
30
5
10

Unit
V
-V
V
nA

35

50
75
100
30

300

0.4

V

1.6
1.3
2.6
8

'if

250

V
V
pF
MHz

35

ns

285

ns

* Pulse Test: Pulse Width :s 300",s. Duty Cycle:s 2%
Also available as a PN2222

c8

SAMSUNG SEMICONDUCTOR

576

MPS2222

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT
100o

1000

'

f500

r--

300

i

~

I

I i:1

i

z

r-- f--VeE.2OV

veE~

,

H 1\ I

I
I

100

.-

........

'

~I

1

,

II

,

i

i

i

V

/

;

,
, I'

!

I ~

i~

II'

I

I
I

'

!i I

,,

'I

il

g

50

i

30

,
f---I10

0
3

5

10

30

100

300 500

1000

3

5

Ie (mAl. COLLEcroR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
10

~~T-t

~

---=fle:'ot'
I i I

~

-

~

~

t

J
Va'E'(sat)

,

1

1 ,:

0.01
3

5

10

t

c---

t-....

...... r---.

100

T'

,

-+,

I

300 500

Ie (mA)... COLLECTOR CURRENT

ciS

i'-

~-

11 Uu
30 50

•

r- t=1M,HZ

""

~J-:

~

1000

"-

h-~
- >'-'=vce(s~

300 500

OUTPUTCAPAaTANCE

-

-----r--

~--

100

10

~

1

30 50

,I
IE'.ol 1

12

!ijl

JI

10

Ie (mAl. COLLEcroR CURRENT

SAMSUNG SEMICONDUCTOR

1000

10·

30

50

100

Vea (VI. COLLECTOR-BASE VOLTAGE

577

MPS2222A

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
TO-92

-Coliector·Emitter Voltage: VCEO =40V
- Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
, Characterlatlc

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage T~mperature

Veao
Vew
VEBO
Ie
Pc
Tj
Tstg

Rating

Unit

75

V
V
V
mA
mW
°C
°C

40
6
600
625
150
-55-150

"Refer to MPS2222 for graphs

/

1 Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
,
,

./

Characterlatlc

Symbol

TeatC~ndltions

Min

I

Coliector-Base'Breakdown Voltage
Collector-Emitter Breakdown Voltage
Einitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cutoff Curren~
DC Current Gain

BVeBO
BVeEo
BVEBO
leao
IEao
hFE

'Collector-Emitter Saturation Voltage

VeE (sat)

"Base-Emitter Saturation Voltage

VaE(sat)

Current Gain Bandwidth Product

fr

Output Capacitance
Turn On Time

Cob
ton

Turn

off Time

toft
I

Noise Figure

NF

" Pulse Test: Pulse Width s 300'1.4S, Duty Cycle
Also available as a PN2222A

'c8 SA~SUNG'

le=10iA,IE=0
la=O
IE =10iA, Ie =0
Vea =60V, IE =0
VEa =3V,le=0
le=O.lmA, VeE=10V
le=1mA, V~E=l,OV
le=10mA, VeE =10V
"Ie =150mA, VeE =lOV
"Ie =500mA, VeE =lOV
le=150mA,la=15mA
Ie =500mA, la =50mA
Ie =150mA, la =15mA
Ie =500mA, la =50mA
le=20mA, VeE=2OV
f=l00MHz
Vea =10V, IE =0, f=lMHz
Vee=3OV,le=150mA
la1 =15mA, VaE (off)=0.5V
Vcc=3OV,le=150mA
la1 =la2=15mA
Ie =l00iA, VeE =lOV
Rs:"1KO, f=1KHz
le~10mA,

lYP

Max

Unit

75

V

40

V
V
iA
nA

6
0.01
10
35
50
75
100

300

40

0.6

0.3
1
1.2

2

300

V
V
V
V
',MHz

.8
35

pF

285

ns

4

dB

ns

s 2%

SEMICONDUCTOR

578

MPS2907

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISITOR
• Collector-Emitter Voltage: Vceo =40V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

Symbol

Rating

Unit

VCBl:)
VCEO
VeBO
Ic
Pc
TJ
Tstg

SO
40
5
600
S25
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

1. Emitter 2. Base 3

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain

Symbol
BVcoo
BVCEO
BVeBl:)
ICBl:)
hFE

·Collector-Emitter Saturation Voltage

VCE (sat)

·Base-Emitter Saturation Voltage

VaE (sat)

Output Capacitance
·Current Gain Bandwidth Product

Cob

iT

11Irn On Time

ton

Turn Off Time

toft

Test Conditions

Min

Ic ..1OpA,le.. 0
Ic ..10mA,la-0
IE=10pA,lc"0
Vca=5QV,IE=0
Ic=0.1mA, VcE -1OV
Ic=1mA, VCE-1OV
Ic=10mA, Vce=1OV
·lc ... 150mA, VCE .... 1OV
·lc .. 500mA, Vce",,1OV
Ic=150mA,la.. 15mA
Ic=500mA,la=50mA
Ic=150mA,la=15mA
Ic ..500mA,la-50mA
Vca=1OV,IE=0
f-1MHz
Ic=50mA, VcE -2OV
f=100MHz
Vcc=3OV,lo=150mA
lal=15mA
Vcc=6II,lc=15OmA
lal =1B2 =15mA

SO
40
5
35
50
75
100
30

~p

Max

Unit

20

V
V
V
nA

300

0.4
1.S
1.3
2.S
8

V
V
V
V
pF
MHz

200
45

ns

100

ns

• Pulse Test: Pulse Width s 3OO'j.tS, Duty Cycle s 2%
Also available as a PN2907

c8

SAMSUNG SEMICONDUCTOR

579

MPS2907

PNP EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

CURRENT GAIN-BANDWID:rH PRODUCT
1000

1000

500

r- r- Vee • 1OV

r-- r- VcE - 2OV

300

,

~

f\

LV

10

0
3

5
10
30 50 100
Ie (mA), COLLECTOR CURRENT

300 500

3

1000

5

'COLLECTOR-EMITTER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE

11

12
1C-101a

10

,

1000

OUTPUT CAPACITANCE

10

r-

10
30 50 100
300 500
Ie (mA), COLLECIOR CURRENT

~

r'

lema
t-f.1MHz

'\
~

VBE(sat)=

I"

/'

f

...... t--..,
4

VCE(sal)-

-

2

, IIII
3

5

10

iI
30 50

100

300 500

,Ie (mA), COLLECIOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

1000

10

30

50

100

Vea (V), COLLECIOR-IIASE VOLTAGE

580

MPS2907A

PNP EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISITOR
• Collector-Emitter Voltage: VCEO =60V
• Collector Dissipation: Pc (max)=625mW

TO-92

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°Cl
Characteristic

Symbol

Rating

Unit

VeBO
VeEo
VEBO
Ie
Pc
Tj
Tstg

60
60
5
600
625
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
f
Collector Dissipation
Junction Temperature
Storage Temperature
• Refer to MPS2907 for grophs

1

Emitter 2. Base 3

I

Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic
Collector-Base Breakdown Voltage
·Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain

Symbol
BVeBo
BVeEo
BVEBO
leBO
hFE

·Collector-Emitter Saturation Voltage

Vedsat)

·Base-Emitter Saturation Voltage

Vae (sat)

Output Capacitance
·Current Gain Bandwidth Product

Cob

h

Turn On Time

ton

Turn Off Time

toff

Test Conditions
Ie =10pA, IE =0
le=10mA,la=0
IE =10pA, Ie =0 .
Vea =50V,IE=0
le=0.1mA, VeE=10V
le=1mA, VeE =10V
le;=1OmA, VeE =10V
·lc =150mA, Vee=10V
·le=500mA, Vce=10V
le=150mA,la=15mA
Ie =500mA, la =50mA
le=150mA,la=15mA
Ie =500mA, la =50mA
Vca =10V,IE=0
f=1MHz
le=50mA, Vee=20V
f=100MHz
Vee=30V,le=150mA
la1 =15mA
Vcc=6V,le=150mA
la1=la2=15mA

Min

l\'p

Max

60
60
5
10
75
100
100
100
50

Unit
V
V
V
nA

300
0.4
1.6
1.3
2.6

8
200

V
V
V
V
pF
MHz

45

ns

100

ns

• Pulse Test: Pulse Width :$ 300'j.IS, Duty Cycle:$ 2%
Also available as a PN2907A

ciS

581

SAMSUNG SEMICONDUCTOR

PNP EPITAXIAL SILICON TRANSISTOR

MPS3702··
AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter Voltage: VCEO =25V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
/

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
. Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol
. Vcoo
Vceo
Veso
Ie
Pe
TJ
T519

Rating

Unit

40
25
5

V
V
V
mA
mW
°C
°C

600

625
150
-55-150

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
"DC Current Gain
'Coilector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
• Base-Emitter On Voltage

Symbol

.Test Conditions

Min

BVeao
BVeEo
BVeso
leao
leBo

le==100IA,le",0
le=10mA,la"0
IE .. 1001A, Ie =0
Vea ==20V,IE=0
VBE=:N, le=O

40
25
5

hFE
VeE (sat)
Cob

le=SOmA, Vee -5V
Ie" SOmA, la - 5mA
Vea=1OV,le=0
f=1MHz
le=50mA, Vce -5V
f=20MHz
Ie =50mA,. Vee =5V

60

iT
VBe (on)

lYP

Max

V
V
100
100
300
0.25
12

100
0.6

Unit

nA
nA
V
pF
MHz

1·

V

" Pulse Test: Pulse Width oS 3oojolS, Duty Cyple:s 2%

.c8

SAMSUNG SEMICONDUCTOR

582

PNP EPITAXIAL SILICON TRANSISTOR

MPS3702

DC CURRENT GAIN

BASE·EMITTER ON VOLTAGE
1000, 1----"

300
100

J

1= ~VCE-5V

. W-tl
,

500 I

VCE_SV
t

"

300 I

~

,

I

I :iji:

II II,!!

!E

.I

:

~

'

100

i3
8

i

f---

t

'

-

50
30

I

... ... ...

0.2

35103050100

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

CURRENT GAIN BANDWIDTH PRODUCT

t= r:'

1.0

--

~ f--

5
VCE'.. SV

f--

--,
'

=
-

Vae (sat)·

i\

/V
I--

1,·10 I,

3

1

r-'
I--

3001500 1000

Ie (mA), COLLECTOR CURRENT

VIE (V), _ m E R WlLTAGE

1000

I

10
1.2

1.0

1---

-

f-- -

.1

I-- '
I--

V
oesat

3

10

,

I

1I,I

35

10

3050

300 500 1000

100

. Ie (mA), COLLECTORWRRENT

35103050

100

300

Ie (mA), COLLECt'OR CURRENT

OUTPUT CAPACITANCE
. 100

50 ~f... 'MHz

_Je.O

30

............. .......

-10

.......

30

50

100

Yea M. COLLECroA BASE VOLTAGE

c8

SAMSUNG SEMICONDUCTOR

583

MPS3703

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: Vceo =3OV
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

VCBO
VeEfI)
V EBO
Ie
Pc
Tj
Tstg

50
30
5
600
625
150
-55-150

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Te'mperature
Storage Tllmperature,

Unit.
V
V
V
rnA
mW
°C
°C

• Refer to MPS3702 for graphs
1" Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
"Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-Off Current
Collector Cut-off Current
"DC Current Gain
"Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
"Base-Emitter On Voltage

Symbol
BVeeo
BVeEo
BVEeo
lEBO
leeo
hFE
Vedsat)
Cob

iT
VeE (on)

Test Conditions
Ie = 100,.A, IE =0
le=10mA,le=0
IE =100,.A, Ie =0
VeE =3V, Ie =0
Vee =20V, IE ",0
le=50mA, VeE =5V
Ie = 50mA, Ie 5niA
Vee =10V,IE=0
f=lMHz
le=50mA, VeE =5V
f=20MHz
le=50mA, VeE =5V

=

Min

lYP

Max

50
30
5

30

100
100
150
0,25
12

100
0,6

Unit
V
V
V
nA
nA
V
pF
MHz

1

V

• Pulse Test: Pulse Width s 300/-ls, Duty Cycle s 2 0,t,

c8

SAMSUNG SEMICONDUCTOR

584

NPN EPITAXIAL SILICON TRANSISTOR

MPS3704

GENERAL PURPOSE TRANSISTOR
• Collector-Emitter Voltage: Vceo =30V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

~ymbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector' Dissipation
Junction Temperature
Storage Temperature

Veeo
VeEo
VEeo
Ie
Pc
Tj
Tstg

Rating

Unit

50
30
5
600
625
150
-55-150

V
V
V
rnA
mW
°C
°C

• Refer to 2N4400 for graphs
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic
Collec!or-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
'DC Current Gain
'Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
'Base-Emitter On Voltage

Symbol
BVe~o

BVcEo
BVEeo
IEeo
Iceo
hFE
Vcdsat)
Cob

h
VeE (on)

Test Conditions

Min

Ie =100!A, IE =0
Ie =10mA, Ie =0
IE =100!A, Ic =0
VeE =3V,lc=0
Vce=20V,IE=0
Ic =50mA, VCE=2V'
Ic =100mA, Ie =5mA
Vce =10V,IE=0
f=1MHz
Ic=50mA, ¥cE=2V
f=20MHz.
Ic=100mA, VcE =2V

50
30
5

100

lYP

. Max

100
100
300
0.6
12

V
V
V
nA
nA
V
pF
MHz

100
0.5

Unit

1

V

• Pulse Test: Pulse Width :!i 300",s. Duty Cycle:!i 2% .

.ciS

SAMSUNG SEMICONDUCTOR

585

MPS3705 ,

NPN EPITAXIAL SILICON TRANSISTOR

.

i

,-

GENERALPURPOSETAANS~lOR
• Collector·Emltter Voltage: VCE~=30V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
Vceo
VeBO
Ic
Pc
Tj
Tstg

50
30

V
V
V
rnA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
!=mitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

5,
600
625
150
-55-150

• Refer to 2N4400 for graphs

1 Emitter 2. Base

3.

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
"Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
"DC Current Gain
"Collector-Emitter Saturation Voijage
Output CapaCitance
Current Gain Bandwidth Product
"Base-Emitter On Voltage

BVCBO '
BVceo
BVeBO
leBO
ICBO
hFE
Vce(sat)
Cob
fT
Vee (on)

Test Conditions
Ic =l00pA,le=O
Ic=10mA,le=0
le=100pA,lc=0
Vee =:N, Ic =0 '
Vee =2r:N, Ie =0
Ic =50mA, Vce ='l)J
Ic=100mA,IB=5mA
VCB=lr:N,le=O
, f=lMHz
'Ic =50mA, Vce ='l)J
f=20MHz
Ic=100mA, Vce='l)J

Min

l'fp

Max

.

50
30
5
100
100

50

V
V
V
nA
nA

150
0.8
12

V
pF
,MHz

100
0.5

Unit

1

V

" PulSEl'Test: Pulse Width :5 300llS, Duty Cycle:5 2%

ciS S~MSUNG

SEMICONDUCTOR

586

MPS3706

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR
• Collector-Emitter Voltage: VCEO =20V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VeBo
Veeo
VEBO
Ie
Pc
TJ
T5tg

40
20
5
600
625
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
• Refer to 2N4400 for graphs

1. Emitter 2 .. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
'DC Current Gain
'Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
• Base-Emitter On Voltage

Symbol

Test Conditions

BVeBo
BVeEo
BVEBO
leBo
leeo
hFE
Vee(sat)
Cob

le=100pA,IE=0
Ie =10mA, Ie =0
Ie =100pA, Ie =0
VBe =3V,le =0
VeB =20V,le=0
Ic=50mA, Vee=':N
Ie =100mA, IB =5mA
Vee=1OV,le=0
f=1MHz
le=50mA, Vee=':N
f=20MHz
Ie =100mA, VeE =':N

fr
Vee (on)

lYP

Min

Max

40
20
5

30
\

100
100
600
1
12

V
V
V
nA
nA
V
pF
MHz

100
0.5

Unit

1

V

• Pulse Test: Pulse Width :s 300",s, Duty Cycle:s 20tb

c8

SAMSUNG SEMICONDUCTOR

.587

MPS4249 '

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
• Collector.Emitter Voltage: Vceo =60V
• Collector Dissipation: Pc (max)=200mW

TO-92

ABSOLUTE MAX~MUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

VCBO
VCEO
VCES
VEBO

Collector Dissipation
Junction Temperature
Storage Temperature

Pc
Tj
Tstg

60
60
60
5
200

V
V
V
V
mW
°C
°C

150
-55-150

1. Emitter 2. Base 3. ColleCtor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
·Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

BVcBO
BVcEo(sus)
BVcEs
BVEBO
ICBO
leBO
hFe

·Collector-Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Output Capacitance

Vce(sat)
Vee (sat)
Cob

Noise Figure

NF

Test Conditions
Ic =10,..4, Ie =0
Ic=5mA,le=0
Ic =10,..4, VeE =0
Ie =10,..4, Ic =0
Vce =4OV, iE=o

Min

Max

60
60
60
5

VeE=~,lc=O

Ic=100,..4, Vce=5V
Ic=1mA, Vce=5V
Ic ';1OmA, VCE =5V
Ic,= 10mA, Ie = 0.5mA
Ic=10mA,le=0.5mA
Vce =5V, Ie =0
1=1MHz
Ic =20/.A, VCE =5V
Rs =10KO, 1=1 KHz
Ic =250,..4, VcE =5V
Rs =1KO,I=1KHz

lYP

100
100
100

10
20
300

Unit
V
V
V
V
nA
nA

0.25
0.9
6

V
V
pF

3

dB

3

dB

• Pulse Test: Pulse Width ~ 300j.lS, Duty Cycle ~ 2%

c8

SAMSUNG SEMICONDUCTOR

588

PNP EPITAXIAL SILICON TRANSISTOR

MPS4250
AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter Voltage: V CEO =40V
• Collector Dissipation: Pc (max)=200mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Symbol

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Junction Temperature
Storage Temperature

I

VCBO
VCEO
VCES
VEBO
Pc
TJ
Tstg

Rating

40
40
40
5
150
-55-150

Unit
V
V
V
V
mw
°C
°C

1

Emitter 2

Base 3

Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
"Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain

BVeao
BVcEO(sus)
BVcEs
'BVEBO
ICBO
lEBO
hFE

'Collector-Emitter Saturation Voltage
"Base-Emitter Saturation Voltage
Output Capacitance

Ve.{sat)
VBE (sat)
Cob

Noise Figure

NF

Test Conditions
Ic=10JA.IE=0
Ic =5mA. IB =0
Ic=5mA. VBE=O
IE=10JA.lc=0
VCB=50V.IE=0
VaE =3V. Ic =0
Ic =100JA. VCE =5V
Ic=1mA. VcE =5V
Ic=10mA. VcE =5V
Ie = 10mA. la = 0.5mA
Ie =10mA. IB =0.5mA
VCB=5V.IE=0
f=1MHz
Ic=20JA. VcE =5V
Rs =10KO. f=1KHz
Ic=250JA. VcE =5V
Rs=1KO. f=1KHz

Min

Typ

Max

40
40
40
5

250
250
250

10
20
700

0.25
0.9

Unit
V
V
V
V
nA
nA

6

V
V
pF

2

dB

2

dB

" Pulse Test: Pulse Width ~ 300/lS. Duty Cycle ~ 2%

c8

SAMSUNG SEMICONDUCTOR

589

PNP EPITAXIAL SILICON TRANSISTOR

MPS4250A
AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter Voltage: V eEO =60V
• Collector Dissipation: Pc (max)=200mW

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter ,!oltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
Vceo·
VCES
VeBO
Pc
Tj
Tstg

Unit

Rating

Symbol

60
60
60
5
150
-55-150

V
V
V
V
mW
·C

·C
1. Emitter 2. Base 3. Colleclor

=

ELECT;'UCAL CHARACTERISTICS· (Ta 25°C)
Characteristic
Collector-Base Breakdown Voltage
'Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
'Base-Emitter Saturation Voltage
Output Capacitance
Noise Figure

Symbol

Test Conditions

BVCBO
Ic=10pA,le=0
BVcEo(sus) Ic=5mA,la=0
Ic=5mA, VaE=O
BVces
BVESO
IE=10pA,lc =0
Vca =40V,IE=0
ICBO
VaE =3V,lc =0
IEao
Ic =100pA, VCE =5V
hFE
Vce(sat)
Ic =10mA, Ie =O.5mA
Ic=10mA,le=O.5mA
Vae (sat).
Cob
·Vce =5V,le=0
f=1MHz
NF
Ic=20pA, VcE =5V
Rs=10KIl, f=1KHz
Ic =250pA, Vce =5V
Rs .. 1KIl, f .. 1KHz

c8SAMSUNG SEMICONDUCTOR

Min

Typ

Max

60
60
60
5

250

10
20
700
0.25
0.9
6

Unit
V
V
V
V
nA
nA
V
V
pF

2

dB

2

dB

590

NPN EPITAXI.AL SILICON TRANSISTOR

MPS5172"
AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter Voltage: VcEo =25V
• Collector Dissipation: Pc (max)=625mW

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

Vceo
VCEO
VEBO
Ic
Pc
Tj
Tstg

25
25
5
100
625
150
-55-150

V
V
V
mA
mW
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage'
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

OC·

• Refer to 'MPSA10 for graphs

1 Emitter 2

Base 3

Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
'DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Base Emitter
Voltage

On

Symbol

Test Conditions

Min

BVcEo
ICBO
ICEs
lEBO
hFE
VCE (sat)
VeE (sat)

Ic=10mA,le=0
Vce =25V,IE=0
VcE =25V, VeE =0
VeE =5V, Ic =0
Ic=10mA, VCE=10V
Ic=10mA,le=1mA
Ic=10mA,la=1mA
Ic=2mA, Vce=5V
Ic=10mA, VcE =10V

25

fr
Veidon)

Typ

Max

100
100
100
500
0.25·

100
0.75
120
0.5

1.2

Unit
V
nA
nA
nA
V
V
MHz
V

" Pulse Test: Pulse Widths 3OOJAS, Duty Cycles 2%

c8

SAMSUNG SEMICONDUCTOR'

591

MPS5179·

·NPN EPITAXIAL SILICON TRANSISTOR

HIGH. FREQUENCY TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Coilector,Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T.=25°C)
Derate above 25°C
Collector Dissipation (Tc=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature

Symbol
Veoo
VeEO
VEOO .
Ie
Pc
Pc
Tj
Tstg

Rating

Unit

20
12
2.5
50
200
1.14
300
1.71
150
-55"'150

V
V
V
mA
mW
mW/oC
mW
mW/oC
°C
°C
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Charaeterfstlc

Symbol

Collector Emitter Sustaining Voltage
Collector Base Breakdown Voltage
Emitter Base. Breakdown Voltage
Collector Cutoff Current

VCEO (sus)
BVcsO ·
BVEBO
Icoo

DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Small Signal Current Gain
Collector Base Time Constant
Noise Figure

hFE
VCE (sat)
VeE (sat)

Common Emitter Amplifier Power·Gain

Gpe

c8

h·
Ccb
hfe

Cc·rbb
NF

SAMSUNG SEMICONDUCTOR

Test Condition
Ic=3mA, le=O
le=0.001 mA, IE=O
IE=0.01mA, Ic=O
Vce=15V, IE=O
Vca=15V, IE=O, T.=150°C
VcE=1V, Ic=3mA
le=-10mA, Ie=-1 mA
Ic=-10mA,le=1mA
VCE=-6V, Ic=-5rnA, f=- 1 OOMHz
Vce=-10V, IE=-O, 1=0.1 to 1 MHz
VcE=-6V, Ic=-2mA, f= 1 KHz
Vce=-6V, IE=-2mA, f=31.9MHz
VcE =-6V, Ic=-1.5mA, f=200MHz
Rs=500
VcE=6V, Ic=-5mA, f=-200MHz

.Mln

Max

12
20
2.5

25

900
25
3

. 15

0.02
1
250
0.4
1
2000
1
300
14
4.5

Unit
V
V
V
/AA
/AA

..

V
V
MHz
pF
ps
dB
dB

592

MPS6513

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
TO·92

• Collector·Emitter Voltage: VCEO =30V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector·Emitter Voltage
Collector·Base Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCEO
VCBO
VEao
Ic
Pc
Tj
Tstg

30

V
V
V
rnA
mW
°C
°C

40
4
100
625
150
-55-150

• Refer to 2N3904 for graphs

1

Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS. (Ta =25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut·off Current
DC Current Gain

BVcEo
BVEBO
ICBO
hFE

Collector-Emitter Saturation Voltage
Output Capacitance

VCE (sat)
Cob

Test Conditions
Ic=500,.,A,la=O
IE =10,.,A, Ic =0
Vca =30V, IE =0
Ic=2mA, VCE=10V
*Ic =100mA, VCE =10V
Ic=50mA,la=5mA
Vca =10V,IE=0
f=100KHz

Min

Typ

Max

30
4
90
60

50
180
0.5
3.5

Unit
V
V
nA

V
pF

·Pulse Test: Pulse Width,;; 30qj.lS, Duty Cycle,;; 2%

c8

SAMSUNG SEMICONDUCTOR

593

PNP EPITAXIAL SILICON TRANSISTOR

MPS6517
AMPLIFIER TRANSISTOR
• Coliector·Emitter Voltage: V~e~ =40V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

V~eo
Veso
Veao
Ie
Pe
Tj
Tstg

Rating
40
40
4
100
625
150
-55-150 '

Unit
V
V
V
mA
,mW
°C
°C

• Refer to 2N3906 for graphs

1 Emitter 2. Base 3. Collector

[::'

=

ELECTRIcAL CHARACTE,RISTICS '(Ta 25°C)
Characteristic
CoNector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Coliector Cut-off Current
DC Current Gain
COllector-Emitter Saturation voltage
Output Capacitance

Symbol
BVeeo
'BVeso
leao
hFE
Vee (sat)
Cob

Test Conditions

Min

le=500pA,la=0
le=10pA,le =0
Vea =30V, Ie =0
le=2mA, Vee=10V
-Ie =100mA, Vee =10V
Ie =50mA, la =5mA
Vea =10V, Ie =0
f=100KHz

40
4
90
60

Typ

Max

50
180
0.5
3.5

. Unit
,V
,V
riA

V
pF

-Pulse Test: Pulse Width:s 3001-ls, Duty Cycle:s 2%

c8,SAMSUNG SEMICONDUCTOR'

p94

MPS6520

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VcEo =25V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =250(;)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Tem.perature

I
I

,vCBO
VCEO
VEeo
Ic.
Pc
Tj
Tstg

Rating

Unit

40
25
4
100
625
150
-55-150

V
V
V
mA
mW
°C
°C

• Reier to 2N3904 lor graphs

1. Emitter 2. Base 3. Collector

=

ELECTRICAL CHARACTERISTICS (T8 25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current

BVcEo
BVEeo
Iceo

DC Current Gain

hFE

Coilector-Emitter Saturation Voltage
Output Capacitance

VCE (sat)
Cob

Noise Figure

NF

c8

SAMSUNG SEMICONDUctoR

Test Conditions
Ic=0.5mA,le=0
IE =10pA, Ic =0
Vce =30V, IE =0'
Vce =20V, IE =0
Ic =100pA, VCE =10V
Ic=2mA, VcE =10V
Ic =50mA,le=5mA
Vce =10V, Ie =0
1.. 100KHz
Ic =10pA, Vce=5V
Rs .. 10KO
1.. 10Hz to 10KHz

Min

1YP

I

25
4
50
50
100
200

Unit

Max

V
V
nA
nA

400
0.5
3.5

V
pF

3

dB

595

M.P~6~21···

NPN EPITAXIAL SILICON TRANSISTOR'

AMPLIFIER TRANSISTOR
TO-92

• Collector-Emitter Voltage: VCEO =25V
• Collector Dissipation: Pc (max)=625mW

=

. ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEao
Ic
Pc
Tj
Tstg

40
25
4
100
625

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

150
-55-150

* Refer to 2N3904 for graphs

1. Emitter 2. Base 3. Collector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-oil Current

BVcEo
BVEBo
ICBO

DC Current Gain

hFE

Collector-Emitter Saturatior:1 Voltage
Output Capacitance
'

Vcdsat)
Cob

Noise Figure

NF

C8S~MSUN~ ~EMICONDUcrOR

Test Conditions
Ic ",0.5mA,la=0
Ie =10pA, Ic =0
Vca =30V,IE=O
Vca=20V,IE=0
Ic =100pA, VcE =10V
Ic=.2mA, VcE =10V
Ic",50mA,la=5mA
V ca ",10V,l e =0
!=100KHz
Ic=10pA, VcE =5V
Rs =10KO
!=10Hz to 10KHz

Min

1'yp

Max

50
50

V
V
nA
nA

600
0.5
3.5

V
pF

3

dB

25
4

150
.300

Unit

596

PNP EPITAXIAL SILICON TRANSISTOR

MPS6522
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCEO =25V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Rating

Unit

Vcso
VCEO
VESO
Ic
Pc
TJ
Tstg

25
25

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

4
100
625
150
-55-150

• Refer to 2N3906 for graphs

1 Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltag~
Collector Cut-off Current

BVcEo
BVEBO
Icso

DC Current Gain

hFE

Collector-Emitte~

Saturation Voltage
Output Capacitance
Noise Figure

VCE (sat)
Cob
NF

Test Conditions
Ic=0.5mA,ls=0
IE =10pA, Ic =0
Vcs=30V,IE=0
Vcs=20V,IE=0
Ic =100pA, VcE =1OV
Ic=2mA, VCE=10V
Ic =50mA, I. =5mA
Vcs =10V,I E=0, f=100KHz
Ic =10pA, VcE =5V
Rs =10KO
f=10Hz to 10KHz

Min

Typ

Max

Unit

50
50

V
V
nA
nA

25

4
100
200

400
0.5
3.5
3

V
pF
dB

,

=8

SAMSUNG SEMICONDUCTOR

597

•

MPS6523

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
• Coliector·Emitter Voltage: VCEO =25V
• Collector Dissipation: Pc (max)=625mW

TO-92

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit

Vceo
Vceo
Veeo
Ic
Pc
Tj
Tstg

25
25

V
V
V
mA
mW
°C
°C

Coliector·Base Voltage
Coliector·Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

4
100
625
150
-55-150

• Refer to 2N3906 for graphs

1. Emitter 2. Base 3. Collector

=

ELECTRICAL .CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Coliector·Emitter Breakdown Voltage
Emitter·Base Breakdown Voltage
Collector Cut·off Current

BVceo
BVeBO
Iceo

DC Current Gain

hFe

Coliector·Emitter Saturation Voltage
Output Capacitance

VCE(sat)
Cob

Noise Figure '

NF

c8

.SAMSUNG SEMICONDUCTOR

Test Conditions
Ic =0.5mA, Ie =0
le=10pA,lc=0
Vce=30V,le=0
Vce=20V,le=0
Ic=100pA, Vce=10V
Ic=2mA, VCE=10V
Ic =50mA, -Ie =5mA
Vce=10V,le-0
f,;,1OOKHz
Ic -10pA, VeE =5V
Rs=10KO
1.. 10Hz to 10KHz

Min

Typ

Max

50
50

V
V
nA
nA

...s00
0.5
3.5

V
pF

3

dB

25

4

150
300

Unit

598

. MPS6560

NPN EPITAXIAL SILICON

TRt~NSISTOR

---------------------------~,------------------------------------------~AUDIO TRANSISTOR
TO-92

• Collector-Emitter Voltage: VCEO =25V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Curren~
Collector Dissipation
Junction Temperature
Storage Temperature

Vceo
VCEO
VEeo
Ic
Pc
Tj
Tstg

Rating
25
25
5'
500
625
150
-55-150

Unit
V
V
V
rnA
mW
°C
°C
1

Emitter 2 Base 3

Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

'Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
. Collector Cut-off Current
Emitter Cut-off Current
'DC Durrent Gain

BVCEO
BVceo
BVEeo
ICEO
Iceo
IEeo
hFE

'Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product

VCE (sat)

fr

'Base-Emitter On Voltage
Output Capacitance

VeE (on)
Gob

-

Test Conditions

Min

Ic =10mA, Ie =0
Ic =100,.A,IE=0
IE=100,.A,lc=0
VcE =25V,le=0
Vce =20V,IE=0
VEe=4V,lc=0
Ic= 10mA, VCE= 1V
Ic=100mA, VcE =1V
Ic=500mA, VcE =1V
Ic =500mA, Ie =50mA
Ic =10mA, VCE =1OV
f=30MHz
Ic=500mA, VcE =1V
Vce =10V, IE =0
f=100KHz

25
25
5

35
50
50

Typ

..

Max

Unit

100
100
100

V
V
V
nA
nA
nA

200
0.5

60
1.2.

30

V
MHz
V
pF

, Pulse Test: Pulse Width s300/AS, Duty Cycle s2%

c8

SAMSUNG SEMICONDUCTOR

599

•

PNP EPITAXIAL SILICON TRANSISTOR

MPS6562
AUDIO TRANSISTOR

, TO-92

• Collector·Emitter Voltage: Vceo.=25V
• Collector Dissipation: Pc (max)=625mW
• Complement to MPS6560

=

ABSOLUTE MAXIMUM RATINGS (Ta 25°C)
Characteristic

Symbol

Rating

Unit·

VCBO
Vceo
Veeo
Ic
Pc
TJ
Tstg

25
25
5
500
625
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Sto'rage Temperature

1. Emitter 2. Base 3. Collector

ELECJRICAL CHARACTERISTICS (Ta=25°C)
Characteristic

Symbol

"Collector-Emitter Breakdown Voltage
Collector-Base BreakdOwn Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
"DC Durrent Gain

BVcEO
BVceo
BVeeo
ICEO
Iceo
leBO
hFE

"Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product

Vce (sat)

"Base-Emitter On Voltage
Output CapaCitance

Vee (on)
Cob

" Pulse Test: Width

c8

s

300/oiS, Duty Cycle

IT

s

Test Conditions

Min

Ic=10mA,le=0
Ic :=100pA, le =0
Ie =100pA, Ic =0
Vce=25V,le=0
Vce =20V, Ie =0·
VEe =4V, Ic =0
Ic=10mA, Vce=1V
Ic=100mA, Vce=1V
Ic=500mA, Vce=1V
Ic =500mA, Ie =50mA
Ic =10mA, Vce =10V .
f=30MHz
Ic =500mA, Vce=1V
Vce =1OV, Ie =0
f=100KHz

25
25
5

Typ

35
50
50

Max

Unit

100
100
100

V
V
V
nA
nA
nA

200
0.5

60

.

-

1.2
30

V
MHz
V
pF

2%

SAMSUNG SEMICONDUcrOR

600

MPS6601

NPN EPITAXIAL SILICON TRANSISTOR

AMPLlFIER TRANSISTOR
TO-92

• Collector·Emitter Voltage: VCEO =25V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM .RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
TJ
Tstg

Rating
25
25

4
1000
625
150
-55-150

Unit
V
V
V
mA
mW
°C
°C

1 Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

.

Symbol

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-oft Current
DC Current Gain

BVcEO
BVcao
BVEBO .
Iceo
ICBO
hFe

Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product

fr

Output Capacitance

Cob

ciS

VeE (sat)

SAMSUNG SEMICONDUCTOR

Test Conditions
Ic =1mA, Ie =0
Ic =100pA, IE =0
IE=10pA,lc =0
Vce =25V, Ie =0
Vce=25V,le=0
Ic=1oomA, VcE =1V
Ic =500mA, Vce=1V
Ic=1000mA, Vce=1V
Ic=1000mA, le=100m~
Ic=50mA, Vce=10V
f=30MHz
Vce=1OV,le=0
f;=100KHz

Min

lYP

Max

Unit

100
100

V
V
V
nA
nA

25
25

4

50
50
30
0.6

V
MHz

30

pF

100

601

•

MPS6601'

'NPN EPITAXIAL SILICON TRANSISTOR
CURRENT GAlN-BANDWIDTK PRODUcr

DC CURRE!'fT GAIN
1000

1000

500 f - - VCE-1V

f--;- r-YcE.1OV

300

,

/~

II
3

5

30 50

10

10
100

300 500

1000

3

5

10

30 50

100

300\500 1000

Ie (mA), COLLECIOR CU~

Ie (mA), COLLECIQII CURRENT

BASHMITTER SATURATION VOLTAGE
COLLEcrDR-EMmER SATURATION VOLTAGE

OUTPUT CAPACITANCE

10

-

to_lOla

50 _~E-O
f_100KHz
30
VBE(s8t)

r-:-

-

Veo(...)

I iI

CID1

3

5

10

30 50

1

100

300

Ie (mA), CoLLECIOR CURRENT

c8

SAMSUNG'SEMICONDUCTOR

1000

10

30

50

100

Yea (V), COLLECIOR.8ASE IIOLTAGE

602

NPN EPITAXIAL SILICON TRANSISTOR

1MPS6602
AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter Voltage: VCEO =40V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcao
Vceo
Veao
Ic
Pc
TJ
Tstg

Rating

Unit

30
40
4
1000
625
150
-55-150

V
V
V
mA
mW
°C
°C

• Refer to MPS6601 for graphs

1 Emitter 2. Base 3 Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Durrent Gain

BVceo
BVcao
BVeao
Iceo
Icao
hFe

Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product

fr

Output Capacitance

Cob

ciS

Vedsat)

SAMSUNG SEMICONDUCTOR

Test Conditions
Ic=1mA,la=0
Ic=100~, le=O
le=10iA,lc=0
Vce =30V,la=0
Vca=30V,le=0
Ic=100mA, Vce=1V
Ic =5OOmA, Vce=1V
Ic=1000mA, Vce=1V
Ie =1000mA,la =100mA
Ic=50mA, Vce=10V
f=30MHz
Vca=10V,le=0
f=100KHz

Min

TYP

Max

Unit

40

V

40

V
V
nA
nA

4
100
100
50 .
50
30
0.6

V
MHz

30

pF

100

603

•

MPS6651

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
TO-92

• COllecto....EmltterVOltage: Vceo=25V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCEO
VCBO
VeBO
Ic
Pc
Tj
Tstg

25
25

V
V
V
A
mW

4
1
625
150
-55-150

OC
°C
1

Emitter 2. Base 3

Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)

.

Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current

.BVcEO
BVcBO
BVeBO
Iceo

Collector Cut-off Current

Iceo

DC Current Gain

hFE

Collector-Emitter Saturation Voltage
Output Capacitance

Vce(sat)
Cob

Base-Emitter On Voltage
Current Gain Bandwidth Product

Vee (on)
fy

Turn On Time

ton

Turn Off Time

toll

Test Conditions
Ie =1mA, Ie =0
Ic =1oopA, Ie =0
Ie =10pA, Ic =0

Min

c8SAMSUNG SEMICONDUCTOR

Max

25
25

Unit
V
V
V

4

Vce=25V,le=0
Vce =25V,l e =0
Ic=1oomA, Vce=1V
Ie =500mA, Vee =1V
le=1A, Vee=1V
le= 1A,le= 100mA
Vee=1OV,le=0
f=1ooKHz
Ie =500mA, Vee =1V
Ie =50mA, Vee =1OV
f=30MHz
Vcc=40V,le=5OOmA
le1=50mA
Vec=4OV,le=5OOmA
le1=50mA

lYP

100

nA

100

nA

0.6
30

V
pF

1.2

V
MHz

55

ns

300

ns

50
50
30

100

604

PNP EPITAXIAL SILICON TRANSISTOR

MPS6651

CURRENT GAIN BANDWIDTH PRODUCT

DC CURRENT GAIN

:P-t--t-t--t

10,000

100001

01

500

VCE-1~~-t-

VCE-1V

f----j

3000

i

01

i

I
r-------

,
I

L---

1--;""

~

50
30

II

ii

I

10
10

30

50

100

300

500

1

10

30

10

1000

COLLECTOR..EMITTER SATURATION VOLTAGE
BASE. EMITTER SATURATION VOLTAGE

100

300

500

1000

•

OUTPUT CAPACITANCE

JI

100

1

f--- -;.,00KHz

Vee (sat

f- f-«: .10'.

50

Ie (mA), COLLECTOR CURRENT

Ie (mA), COLLECTOR CURRENT

eo
w

U

Vce(sat)

1

V ...

z

i! eo

~

c5

rf

So

40

\

8

........
2()

o

0.01

3

5

10

30 50·

100

300 500 1000

'e (mA), COLLECTOR CURRENT

cS2 SAMSUNG SEMICONDUCTOR
""

\

o

r-.....

r10

15

2()

'Ice (V), COLLECTOR BASE VOLTAGE

25

MPS8097 '

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VCEO =40V
• Collector Dissipation: Pc (max)=625mW

T0.:92

ABSOLUTE MAXIMUM RATINGS (Til =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
TJ
Tstg

60

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

40
6
200
625
150
-55-150

, Reier to 2N5088 lor graphs

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
'Collector-Emitter Breakdown Voltage
CollectOr Cut-off Current

Symbol
'BVCEo
'ICBO

Emitter Cut-oll Current
'DC Current Gain
Output Capacitance

lEBO
hFE
Cob

'Base-Emitter On Voltage
Noise Figure

VeE (on)
NF

Test Conditions

Min

Ic=lOmA,le=O
Vee .. 4OV,IE~O
Vee-SOV,IE=O
Vee ,,:,SV, Ie =0
Ic=100pA, VCE '-5V
Vee =5V, IE =0
l=lMHz
lo=loopA, Vce -5V
lo=.loopA, V'ce=5V
Rs -10KO, 1=10Hz

40

250
1
0.45

'1\'p

. Max

'30
10
20
700
4
0.65
2

Unit
V
nA
nA
nA
pF
V
dB

'Pulse Test: Pulse Width~300jAS.Duty Cycle~2%

c8

SAMSUNG SEMICONDUCTOR

606

NPN EPITAXIAL SILICON TRANSISTOR

MPS8098
AMPLIFIER TRANSISTOR
• Coliector-EmIHerVoltage: Vceo =60V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current '
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ie
Pc
Tj
Tstg

60
60

V
V
V
mA
mW
°C
°C

6
500
625
150
-55-150

1

Emitter 2. Base 3. Collector

,ELECfRICAL CHARACfERISTICS (T a =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
'DC Current Gain

BVcBO
BVeEo
BVEBO
ICEo
IcBO
lEBO
hFE

'Collector-Emitter Saturatio'n Voltage

VCE (sat)

Output CapaCitance

Cob

Current Gain Bandwidth Product

fT

'Base-Emitter On Voltage

VeE (on)

Test Conditions
le=100pA,IE=0
le=10mA,l e ",0
IE=10pA,lc =0
VeE =60V,le=0
VCB =60V, IE =0
VEe =6V, Ic =0
Ic=1mA, VcE =5V
Ic=10mA, VeE=5V
Ic=100mA, VCE=5V
Ic =100mA, Ie =5mA
Ic=100mA,le=10mA
VCB =5V, IE =0
f=1MHz
Ic=10mA, Vce=5V
f=100MHz
Ie =1mA, VeE =5V

Min

~p

Max

60
60
6

100
100
75

100
100
100
300

0.4
0.3
6
150
0.5

Unit
V
V
V
nA
nA
nA

V

V
pF
MHz

0.7

V

, Pulse Test: Pulse Width:s 300,..s, Duty Cycle:s 2%

c8

SAMSUNG SEMICONDUCTOR

607

•

-,

MPS8098

.

"

'

;\

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

CURRENT GAIN·BANDWIDTH PRODUCT
1000

1000
Vee_ V

I-- _ vce-SV,

500

500

r-

~

V~
I-

30

10
0.1

G.3 0 5 '

3

5

10

30 50 100

10
.1

1

3

5

Ie (mAl. COLLECIOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE
BASE·EMITTER SATURATION VOLTAGE
0

10

I--

3'

.1L(s"l

rJ.lJ II

f=1MHz

8

V

r-..

1

~

1000

IIIII

Ic",101s

'1==

I
~

, OUTPUT CAPACITANCE
2

51--

Iii'

10
30 50 100
300
Ie (mAl. COLLECIOR CURRENT

Vce(sat)

f".

OD!
1

3

5

10

30 50

100

300 500 1000

Ie (mAl. COLLECIOR CURRENT

c8

SAMSUNG SEMIcONDUCTOR

0.1

0.3 0.5

1

3

5

10

30 50

100

Yea M. COLLECTOR.BASE VOLTAGE

608

NPN EPITAXIAL SILI~ON TRANSISTOR

MPS8099
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: VcEo =80V
• Collector Dissipation: Pc (max)=625mW

'1"0-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
TJ
Tstg

80
80
6
500
625
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
• Refer to MPS8098 for graphs.

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

'Collector-Emitter Breakdown Voltage
Collector-B,ase Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
• DC Current Gain

BVcEo
BVCBO
BVEBO
ICEo
Iceo
IEeo
hFE

'Collector-Emitter Saturation Voltage

VCE (sat)

'Base-Emitter On Voltage
Current Gain Bandwidth Product

fr

Output Capacitance

VBE (on)

Cob

Test Conditions
Ic =10mA, Ie =0
Ic =100pA, IE =0
IE =10pA, Ic =0
VcE =60V,le=0
Vce =80V,IE=0
VeE =6V,lc =0
Ic=1mA, VcE =5V
Ic=10mA, VcE =5V
Ic=100mA, VcE =5V
Ic =100mA, Ie =5mA
Ic=100mA,le=10mA
Ic=10mA, VcE =5V
Ic =10mA,VcE =5V
f=100MHz
VCB =5V, IE =0
f=1MHz

Min

Typ

Max

80
80
6

100
100
75

0.6
150

100
100
100
300

0.4
0.3
0.8

6

Unit
V
V
V
nA
nA
nA

V
V
V
MHz
pF

, Pulse Test: Pulse Width :s 300",s, Duty Cycle:s 2%

. c8

SAMSUNG SEMICONDUCTOR

609

•

.M"PS8598

PNP EPITAXIAL SILICON TRANSISTOR·

AMPLIFIER TRANSISTOR
TO-92

• Collector-Emitter Voltage: Vceo =60V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base VOltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Symbol

Rating.

Unit

VCBO
VCEO
VEao
Ic
Pc
TJ
Tstg

60
60
5
500
625
150
-55-150

V
V
.V
mA
mW

OC·
OC
1. Emitter 2.

Bas~ 3 Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

'Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdcwn Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
, DC Current Gain

BVcEo
. BVcBO
BVEBO
ICEO
IcBO
leao
hFE

)
'Collector-Emitter Saturation Voltage

. Vce(sat)

'Base-Emitter On Voltage
Current Gain Bandwidth Product

Vae(on)
fr

Output Capacitance

Cob

.

Test Conditions

Min

Ic=10mA.la=0
Ic=;100"A.IE=0
IE = 10"A. Ic =.0
VCE=60V.la=O
Vca=60V.IE=0
VaE=4V.lc=0
Ic=1mA. VcE '=5V,
Ic=10mA. VcE =5V
Ic =100mA. VcE =5V
Ic=100mA.la=5mA
Ic =100mA. la =10mA
Ic=1 mAo VcE =5V
Ic=10mA.VcE =5V
f=100MHz
Vca=5V.le=0
f=1MHz

60
60
5

100
100
75

0.5
150

Typ

Max

100
100
100
300

0.4
0.3
0.7

8

Unit
V
V
V
nA
nA
nA

V
V
V
MHz
pF

• Pulse Test: Pulse Width !S 300ils. Duty Cycle!S 2 0Al

c8'SAM~UNG SEMICONDUCTOR

610

MPS8598

PNP EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

, CURRENT GAIN BANDWIDTH PRODUCT

--

1000
1000 _

_

t---i---r

sooEEffiv

r---- VCE ... 5V

---

t-----T -- r~

~
--

~

--

===

i11oo~~ttI~~!I~~1I
r=~+--H++H-H--+--H++H+t-+-t++H+H

-~

-

l-

i

50

==:::-c

~~-+-~H4~~~~H4~~-+--H++~

, - - - --

-f

I

1

10

30

100

~

1000

50

~

10

100

Ie (mA). COLLEcroR CURRENT

Ie (mA), COLLEcroR CURRENT

COLLECTOR EMITTER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
10

3

III I

I

I

•

OUTPUT CAPACITANCE
100

I-- t-lc-l0Ie

50 I-- I-le_O
I-- t-- f=1MHz
~

1

I--

Vse(sat

V

5

1
Vc_(...}

~

I'
111111

1
1-

3

5

10

1

30 50

100

'300 500

Ie (mA), COLLEcroR CURRENT

=8

SAMSUNG SEMICONDUCTOR

1000

0.1

3

5

10

~50_100

Yea (V), COLLECIOR BASE CAPACITANCE'

611

PNPEPITAXIAL SILICON TRANSISTO.FI

MPS8599
AMPLIFIER TRANSISTOR
• Coliector·Eminer Voltage: Vceo =80V
. • Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Coliector·Base Voltage
Coliector·Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction T\!mperature
Storage Temperature.

Symbol
VCBO
. VCEO
VEBO
Ic
Pc
Tj
TStg

Rating

Unit

80
·80
5
500
625
150
-55-150

V
V
V
mA
mW
°C
°C

• Refer to MPS859S for graphs
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Symbol.

Characteristic

Test Conditions

..
"Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter·Base Breakdown Voltage
Collector Cut-off Current
.Collector Cut-off Current
Emitter Cut-off Current
"DC Current Gain

BVCEO
BVCBO
BVEBo
ICEo
ICBO
lEBO
hFE

"Collector-Emitter Saturation Voltage

VCE (sat)

"Base-Emitter On Voltage
Current Gain Bandwidth Product

iT

Output Capacitance

VBE (on)

Cob

• Pulse Test: Pulse Width:s 300fAS. Duty Cycle:s 2%

c8

.SAMSUNG

SEMI~ONDUcroR

Ic=10mA,IB=0·
Ic=100pA,I.=0
IE=10pA,lc=0
VcE =60V,IB=0
VCB=80V, 1.=0
VBE =4\{, Ic =0
Ic ",1mA, VcE =5V
Ic=10mA, VcE =5V
. Ic=100mA, Vc.=5V
Ic =1oomA,IB=5mA
Ic =1oomA,IB=10mA
Ic=10mA, VCE=5V
Ic=10mA, VCE=5V
f=100MHz
VcB =5V,IE=0
f=1MHz

Min

Typ

Max

Unit

so·
so

V

·5

'It

V
100
100
100

100
100
75

0.6 .
150

nA
nA
nA

300

0.4
0.3
O.S

V
V
V
MHz

S

pF

MPSA05

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
TO-92

• Collector-Emitter Voltage: VCEO =60V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
Vceo
VeBO
Ic
Pc
Tj
Tstg

Rating

60
60

4
500
625
150
-55-150

Unit
V
V
V
mA
mW

DC
DC

1

Emitter 2 . Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
'Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
. Collector Cut-off Current
Collector Cut-off Current
DC Cl:Irrent Gain

Symbol
BVcEO
BVeBO
Iceo
Iceo
hFe

Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product

Vce (set)

Base-Emitter On Voltage

Vee (on)

h

Test Conditions

Min

Ic=1mA,le=0
le=100pA,lc=0
Vce=60V,le=0
Vce=6OV,le=O
Ic=10mA, Vce=1V
Ic=100mA, Vce=1V
Ic =100mA, Ie =10mA
Ic=10mA, Vce=2V
f=100MHz
Ic=100mA, Vce=1V

.60

lYP

Max

Unit

V

4
100
'100

V
nA
nA

50
50
0.25

V
MHz

1.2

V

100

• Pulse Test: Pulse Width s 300j.lS, Duty Cycle s 2%

c8

SAMSUNG SEMICONDUCTOR

613

MPSAOS','

'''1;:

,NPNEPITAXIAL SILICON TRANSISTOR:
BASE·EMITTER ON VOLTAGE

DC CURRENT GAIN

,

"

1000~1mD.
5OO~'1

f--

.yo

.w

I

II
I

10 '---'-..L3-'-:'5.LJ.i.L1'-0--'-30.J....L.50
J.:'-'-LLJ
' -.......
300'::-'::500':'-':1O':':OO
100

1

CURRENT GAIN-BANDWIDTH PRODUCT

1.0

0.4

0.2

1.2

'V. (V), BASE-&MITTER VOLTAGE

Ie (mA), cou.ECIOR CURRENT

, ,COLLECTOR-EMiTTER SATURATION VOLTAGE
BASE·EMITTER SATURATION VOLTAGE
'
10 I

I--

IC.1~~

.. (Bat)

CE(",")

3
Ie (mA), COLLECI'OR CUR.w.T

c8

SAMSUNG SEMICONDUCTOR

5

10

3050

100

300500

1000

Ie (mA), COLLECIOR CURRENT

6,14

MPSA06

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
TO-92

• CollectQr.EmitterVoltage: Vceo"l80V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vceo
Vcw
Veeo
Ic
Pc
Tj
Tstg

Rating
80

80
4
500
625
150
-55-150

Unit
V
V
V
mA

rrm
°C

OC

• Refer to MPSA05 for graphs

1 Emitter 2

•

Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
• Coliector-emitterlBreakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain

Symbol
BVeeo
BVeeo
Icw
Iceo
hFe

Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product

iT

Base-Emitter On Voltage

VSE(on)

Vee (sat)

Test Ccmdltions
Ic=1mA,ls=0
le=10QpA,lc=0
VCE =60V, Is =0
Vcs=8OV,le=O
Ic=10mA, Vce=1V
.lc=100mA, Vce=1V
Ic =100mA, Is =10mA
Ic=10mA, Vce=2V
f=100MHz
Ic=1oomA, Vee=1V

!

Min

lYP

Max

Unit

100
100

V
V
riA
nA

80

4

50
50
0.25

V
MHz

1.2

V

100

•. Pulse Test: Pulse Width s 300/lS, Duty Cycle s 2%.

c8

SAMSUNG SEMICONDUCTOR

.6'15

MPSA10

.NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR

TO-92

• Collector-Emitter Voltage: Vceo =40V
• Collecto.r Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperatur~
Storage Temperature

Symbol
. Vceo
. VEOO
Ic
Pc
TJ
Tstg

Rating

Unit

40
4
100
625
150
-55-150

V
V
mA
mW
°C
°C

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic .
Collector-Emitter Breakdown Voltage
. Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
OutPUt Capacitance

c8

Symbol
BVcEo
BVEBO
Iceo
hFe

h
Cob

SAMSUNG SEMICONDUCTOR

1. Emitter 2. Base 3. Col/ector

Test Conditions

Min

Ic=1mA,le=0
IE =100pA, Ic =0
Vce =30V,IE=0
ic=5mA, VCE=10V
Ic=5mA, Vce=10V
f=100MHz
Vce =10V, I~=O
f=100KHz

40
4
.40
125

Typ

Max

100
400

Unit
V
V
nA
MHz

4

pF

616

MPSA10

PNP EPITAXIAL SILICON TRANSISTOR

•

CURRENT GAIN-BANDWIDTH

DC-CURRENT GAIN
1000

1000

500

500

Vce_1OV

~

300

~

"'~

1

100

il

g

50

1

30

g 300

miJt~~

F
r---

..l5
5

VCE"",,5V

10

{
.t:
10
3

5

10

30 50

100

300 500 1000

0.1

0.3 0.5

3

5

10

30 50

100.

Ie (mA), COLLECTOR CURRENT

Ie (mA), COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
.

OUTPUTCAPAaTANCE

0

II I!

..

IE.d III

51- f .. 100KHz

3

1

1\

V8E(sat)

3

V
1

b

ce(sat)

5
3

0.01

3

10

30

100

300 500 1000

Ie (mAl. COLLECItlR CURRENT

=8

SAMSUNG SEMICONDUCTOR

3

5
Vea (V),

10

30 50

COLLECTOR~BASE

100

300 500

VOLTAGE

1000

I~rl~ 1001'"""'''''''''
,JSILICON DARLINGTON TRANSISTOR

MPSA12-' ,"',' ",'
DARLINGTON TRANSISTOR

TO-92

• Collector-Emitter Voltage: VCES =2OV
• Collector Dissipation: Pc (max)=825mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Junction Temperature
Storage Temperatura

Symbol

"ICES
VEBO
' Pc
Tj
lStg

Rating
20

10
625
150
-55-150

Unit
V
V
rWN

OC
°C

• Refer to 2N6427 for graphs

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characterlst,c
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cutoff Cur.rent
DC Cur/'Wlt Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage

'c8

1. Emitter 2. Base 3. Collector

Symbol

Test Conditions

Min

BVcES
lceo
ICES
lEBO
hFE
VCE (sat)
VBE(on)

'lc .. l00pA,IB=O
VCB =15V,IE=0
, VCE =15V,IB=0
VBE=10V,lc =0
Ic=10mA, VCE=5V
Ic .. 1O!TIA,IB=O.o1m,A
Ic=10mA, VCE=5V

20

SAMSUNG SEMICONDUCroR

1\'p

Max

Unit

100
100
100

V
nA
nA
nA

1
1.4

V
V

20K

618

NPN EPITAXIAL
SILICON DARLINGTON TRANSISTOR

MPSA13
DARLINGTON TRANSISTOR
• Collector-Emitter Voltage: VeES =30V
• Collector Dissipation: Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCES
V EEO
Ic
Pc
Tj
Tstg

30
30
10
500
625
150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
• Refer to 2N6427 for graphs

1 .. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS. (Ta =25°C)
Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

100
100

V
nA
nA

"

Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
"DC Current Gain

BVcEs
Icao
lEBO
.hFE

"Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product

VCE (sat)

"Base-Emitter On Voltage

VeE (on)

IT

Ic=100pA,la=0
Vce =30V, IE =0
VaE =10V,lc =0
Ic=10mA, VcE =5V
Ic= 100mA, VcE =5V
Ic=100mA,la=0.1mA
Ic =10mA, VcE =5V
f= 100MHz
Ic= 100mA, VcE =5V

30

5K
10K
1.5
125
2

V
MHz
V

" Pulse Test: Pulse Widths300jis, Duty Cycles2%

.=8

SAMSUNG SEMICONDUCTOR

619

Nt"N Ct"IIAAIAL

MPSA14 ,

'SILICON 'DARLINGTON TRANsISTOR

DARLINGTON TRANSISTOR
TO-92

• Collector-Emitter Voltage: Vces =30V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcao
Vces
VeBO
Ie
Pc

Tj
Tstg

Rating
30
30
10

500
625
150
-55-150

Unit
V
V
V
mA
mW
,oC
°C

, Referto 2N6427 for graphs

1. EmItter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
'DC Current Gain

BVces
ICBO
leBO
hFe

'Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product

fr

'Base-Emitter On Voltage

VBe (on)

Vcdsat)

Test Conditions

Min

Ic=100pA,IB=0,
Vca =3(N,le =O
Vae=1OV,lc=0
Ic=10mA, Vce=5V
Ic=100mA, Vce=5V
Ic=100mA,la=0.1mA
Ic=10mA, Vce=5V
f=100MHz
Ic=100mA, Vce=5V.

30

~p

Max

Unit

100
100

V
nA
nA

10K
20K
1.5
125
2

V
MHz
V

, Pulse Test: Pulse Width s 300jAs, Duty Cycles 2%

c8

SAMSUNG SEMICONDUCTOR

620 '

MPSA20

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
TO-92

• Collector-Emitter Voltage: VCEO =40V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

Vcw
VEBD
Ic
Pc
Tj
Tstg

40
4
100
625
150
-55-150

V
V
mA
mW
°C

Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

~

1

OC

• Refer to MPSA10 for' graphs
1 EmItter 2

Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
"Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
"DC Current Gain
"Current Gain Bandwidth Product
Collector-Emitter Saturation Voltage,
Output Capacitance

Symbol
BVcEo
BVEBO
ICBD
hFE'

fr
VCE (sat)
Cob

Test Conditions

Min

Ic=1mA,IB=0
IE =100pA, Ic =0
VCB=3OV,IE=O
Ic=5mA, Vc~=1OV
Ic=5mA, Vce=1OV
f=1ooMl:!z'
Ic=10mA,IB=1mA
VCB=1OV,IE=0
f<;=100KHz

40
4

lYP

, Max

100

40

Unit
V
V
nA

400

' 125

MHz
0.25

4

V
pF

"'Pulse Test: Pulse Widths300~, Duty Cycles2%

c8

SAMSUNG SEMICONDUCTOR

621

,SILICON, DARUNGTON TRANSISTOR'

MPSA25
DARLINGTON TRANSISTOR
• Coliector·Emitter Voltage: Ven =40V
• Collector Dissipation: Pc (max)=625mW

10-92

=

.ABSOLUTE ~AXIMUM RATINGS (T. 25°C)
Characteristic

I' Symbol 1

Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCES
VeBO

ic

Pc
Tj
Tstg

Rating

40
10
500
625
150.
-55-150

1 Unit
V
V
mA
mW
°C
°C

1. Emitter 2. Base 3. Col/ector

=

ELECTRICAL CHARACTERISTICS (Ta 25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown VOltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
"DC .Current Gain

BVces
BVc80
ICBO
leeo
ICES
hFe

"Coliector~Emitter Saturation Voltage
"Base-Emitter On Voltage

Vce (sat)
VeE (on)

"Pulse Test: Width

c8

Test Conditions
Ic=100pA, V8e=0
Ic =100pA, Ie =0
VC8=30V,le=0
Vee=10V,lc=0
Vce=3OV, Vee =0
Ic =10mA, Vce =5V
Ic.=100mA, Vce=5V
Ic ·=100mA,l e =0.1mA
Ic=100mA, VcE =5V

Min

lYP

Max

Unit

500

V
V
nA
nA
nA

1.5
2

V
V

40
40
100
100
.10K
10K

:s 300/lS, Duty Cycle :s 2%

SAMSUNG SE~ICONDUcroR

•. 622

NPN EPITAXIAL
SILICON DARLINGTON TRANSISTOR

MPSA25

BE_.
DC CURRENT GAIN

000K
1500K

r:--" " :"-;,, ~5V

3OOKr---

t

SAFE OPERATING AREA
10000
5000

f----

-

I-

3!lOO

-1'000
a:

~500

100",S

--

1m.

"'" i'-.

~3OO

i'00 =

"to-

'"

e_

T.-2fiGC

50

30

10

30 50

100

300 500

1000

'\

1\

""

.

10

5

j\:

15

j!

3

"

10

Ie (rnA), COLLECIOR CURRENT

30

50

100

VeE (\I), COLLECIOR-EMITTER VOLTAGE

IlA$E-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10

BASE-EMITTER ON VOLTAGE
200

100

1e-100ms

~

I

II

-VcE_5V

Vae(saI)
I

vLlL

I

0.1

1

10

30

50

100

Ie (mAl, COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

300

(I

0.2

D.6

1.0

1.4

1B

2.2

2.6

v. (V), BASE-EMITTER VOLTAGE

623

,MPSA26

SIUCONDARLINGTON TRANSISTOR,

DARLINGTON TRANSISTOR
• Collector-Emitter Voltage: VCES =50V
• Collector Dissipation:' Pc (max)=625mW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
. Characteristic

. Symbol

Rating

U~it

VCES
VEeo
Ic
Pc
Tj
Tstg

SO
10
,
500
625
1S0
-SS-1S0

V
V
mA
mW
°C
°C

Collector-Emitter Voltage
Emitter-Base Voltage •
Collector Current'
Collector Dissipation
Junction Temperature
Storage Temperature
, Refer to MPSA2S for graphs

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Cltaracteristic

Symbol

Test Conditions

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut~off Current
Collector Cut-off Current
'DC Current Gain

BVCES
BVceo '
ICeo
lEBO
Ices
hFe

'Collector-Emitter Saturation Voltage
'Base~Emitter On Voltage

VOE (sat)
Vee (on)

le=100pA, VSE=O
le=100pA, IE =0 '
Vcs=40V,le=0
VeE=10V,le=0
Vce=40V, Vee=O
Ic=10mA; Vee=5V
Ie =100mA, Vce =SV
Ic=100mA,le=0.1mA
Ie =100mA, VCE =SV

• Pulse Test: Width

c8

Min

~p

Max

Unit

100
100
SOO

V
V
nA
nA
nA

1.S
2

V
V

SO
SO

10K
10K

:s 300/lS, Duty Cycle :s 2%.

SAMSUNG SEMICONDUCTOR

,624

NPN EPITAXIAL
SILICON DARLINGTON TRANSISTOR

MPSA27
DARLINGTON TRANSISTOR

TO-92

• Collector· Emitter Voltage: VCES =60V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)

I Symbol

Characteristic
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dil1sipation
Junction Temperature
Storage Temperature

I

Vces
Veeo
Ic
Pc
. Tj
Tstg

Rating
60
10
500
625
150
-55-150

I Unit
V
V
mA
mW
°C
°C

, Refer to MPSA25 for graphs
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
. Symbol

Test Condition

Coliector·Emitter Breakdown Voltage
Coliector·Base Breakdown Voltage
Collector Cut·off Current
Emitter Cut·off Current
Collector Cut·off Current
'DC Current Gain

BVcES
BVceo
lceo
leeo
Ices
hFe

'Coliector·Emitter Saturation Voltage
'Base-Emitter On Voltage

VCE (sat)
Vse (on)

Ic =l00pA,VsE=O
Ic=100pA,le=0
Vcs=50V,le=0
Vse=lOV,le=O
Vee =50V, Vse=O
le=10mA, Vee=5V
. le=100mA, Vce=5V
Ie =.100mA,.ls =O.lmA
Ie =100mA, Vee =5V

.Characteristic

, Pulse Test: Width

c8

s 300/AS,

Duty Cycle

s

Min

lYP

Max

Unit

100
100
500

V
V
nA
nA
nA

1.5
2

V
V

60
60

10K
10K

2%

SAMSUNG SEMICONDUCTOR

625

,IYIPSA42·

·NPN, EPITAXIAL SILICON TRANSISTOR

.HIGH VOLTAGE TRANSISTOR
TO-92

• Collector·Emitter Voltage: VeE-O =300V
• Collector Dissipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

300
300
6
500
625
150
-55-150

V
V
V
mA
mW
°C
°C

Coliector·Base Voltage
Coliector·Emitter Voltage
Emitter·Base Voltage
Collector Curr.ent .
Collector Dissipation
Junction Temperature
Storage Temperature

I

Ii
1 E'mltter 2. Base 3 Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Chal'!lcteristic..

Symbol

·Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
"DC Current Gain

BVceo
·BVceo
BVeBO
Iceo
leBO
hFE

·Collector-Emitter Saturation Voltage
·Base-Emitter Saturation Voltage
Current Gain Bandwidth Product

Vce (sat)
. Vee (sat)

Collector-Base Capacitance

h
Ccb

• Pulse Test: Pulse Width:s3001'S, Duty Cycles 2%

c8

SAMSUNG SEMICONDUCTOR·

Test Conditions

Min

Ic=1mA,le=0
Ic =100,.A, Ie =0
Ie =100,.A, Ic =0
Vce=200V,IE=0
Vee=fN;lc=O
Ic=1mA, Vce=1OV
Ic=10mA, VcE =1OV
Ic =30mA, Vce =1OV
Ic ';'20mA, Ie =2mA
Ic =20mA, Ie =2mA
Ic=10mA, VcE =2OV
f=100MHz
Vce =20V, Ie =0
f=1MHz

300
300
6

l'yp

Max

Unit

100
100

V
V
V
nA
nA

25
40
40
0.5
0.9
50

3

,

V
V
MHz

pF

MPSA42

NPN EPITAXIAL SILICON TRANSISTOR
CURRENT GAIN·BANDWIDTH PRODUCT

DC CURRENT GAIN
1000

I

500 -VCE-'

VCE-2fN

300

V

'-----

"\

~

/

V

/

>,

1

30

10

50

3

100

Ie (mAl, COI.L.ECIOR CURRENT

5

10

30

50

100

Ie (mA), COLLECIOR CURRENT

COLLECfOR·EMmER SATURATION VOLTAGE
BASE·EMITTER SATURATION VOLTAGE
0

COLLECfOR·BASE CAPACITANCE

•

100
'--

1c.101B

50

3

r--- rr--- r-

IE_O

'.lMHz

EJJ(oat)

l Eg

i'IF== 1==

",-'"

VCE(OIII)

......
0.01

3

5

10

3050

100

300-

,0.1

D.3 D.5

35103050100

Ie (mA), COLLECIOR CUIIIIE!'"

c8

SAMSUNG SEMICONDUCTOR

,6,27

NPN ·EPITAXIA.L SILICON TRANSISTOR, . ·
HIGH VOLTAGE TRANSISTOR
• Collector.Emltte~Voltage: VCEo =200v
• Collector DIssipation: Pc (max)=625mW

. TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=25°C),
.
Characteristic
Collector-Base. Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
• Refer to MPSA42 for graphs

.Symbol

Rating

Unit

VCBO
Vceo
VEBO
Ic
Pc
TJ
Tstg

200
200
6
500
625
150
-55-150

·V
V
V
rnA
mW
°C
°C

.

1. Emitter 2. Base 3 Collector

"., ,

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Charactaristlc
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut.off Current
Emitter Cut-off Current
I
'DC Current Gain

'Collector-Emitter Saturation Voltage
'Base-Emitter Saturation Voltage
Collector-Base Capacitance
Current Gain Bandwidth Product

Symbol
BVcEo
BVceo
BVEBO
Iceo
IEeo
hFE

Vce (sat)
Vee (sat)
CCb
fr

'Pulse Test: PulSe Widths 3OOjlS, Duty Cycles 2%

c8~AMSUNG SEMICONDUCTOR

Test Conditions
Ic=lmA,le';'O
Ic=loopA,le=O
IE =lOOpA, Ic =0
Vce = 16OV, IE =0
Vee=4V,lc=0
.lc =lmA, VcE =10V
Ic =10mA,.VcE=10V
Ic=30mA, VcE =10V
Ic =20mA,le,;,2mA
Ic =20mA,l e ;'2mA
Vce=20V,le=0
f=lMHz
Ic=10mA. VcE =20V
f:=100MHz

Min

Typ

Ma~

Unit

100
100

V
V
V
nA
nA

.0.5
0.9
4

V
V
pF

200
200
6

25

40
40

50·

MHz

MPSA44

NPN EXITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol

Characteristic
Collector-Base VOltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T.=25°C)
Collector Dissipation (Tc=25°C)
Junction Temperature
Storage Temperature

.

VCBO
VCEO
VEBO
Ic
Pc
Pc
Tj
Tstg

Rating

Unit

500
400
6
300
625
1.5
150
-55"'150

V
V
V
mA
mW
W
°C
°C

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Collector-Base Breakdown Voltag
'Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
-DC Current Gain

Symbol
BVcBO
BVcEo
BVcEs
BVEBO
lceo
ICEs
lEBO
hFE

-Collector-Emitter Saturation Voltage

VCE (sat)

- Base-Emitter Saturation Voltage
Output Capacitance

VSE (sat)
Cob

'Puls~ Test: Pulse Width;5300,..s, Duty Cycle;5201b

c8

.SAMSUNG SEMICONDUCTOR

Test Condition
Ic=100,..A,IE=0
Ic= 1 mA, 'B=O
Ic= 1 OO,..A, VSE=O
IE= 1 O,..A, Ic=O
VcB =400V, IE=O
VCE =400V, VBE=O
. VEB=4V, Ic=O
VcE =10V,lc=1mA
VCE =10V,lc=10mA
VcE=10V, Ic=50mA
VcE =10V,lc=100mA
Ie= 1 mA, 18=0.1 mA
Ic=10mA,IB=1mA
Ic=50mA, IB=5mA
Ic';"10mA,IB=1mA
VcB=20V, IE=O, f=1MHz

Min

Max

Unit

0.1
500
0.1

V
V
V
V
,..A
nA
,..A

500
400
500
6

40
50
45
40

200

'0.4
0.5
0.75
0.75
7

V
'V
V
V
pF

•

MP$A44

NPN' EXITAXIAL SILICON TRANSI.STOR
DC CURRENT GAIN

16 0

TURNoON SWITCHING TIMES
10

U.~L.

'40

V,,='50~~

Ie/Ie 10
Ta 25°C

VeE OFF), 4V

'20

"'\.

i'OO

"5 80 1.,..00

i

60

g

40

i

20

8

\

I\~

,
0.5

~

~

0

H

.~

-20

td

-40
3 5 10

3050 100

500 1K

3K

0.1

5K 10K

,

lc(mA), COLLECTOR CURREN'!'

'00

CAPACITANCE
k

Vcr: 150V

Ic!1b s 'O
Ta=25°C

0

50

1c(mA), COLLECTOR CURRENT

TURN-oFF SWITCHING TIMES
'00

~i'"i'"

30

'0

Ta 25°C
MHz

1='

500
300

0

'0

I=CJb
0

Is

3

'"

1

O. 3

0

1-0

r--.

0

.

o. 5

o.

.......

"
30

'0
Ic(mA~

50

I

'"""

3

I

,

Cob

5

,
100

0.1

0.3)5

1

3 5

10

3050 100

301.5001000

VcaCVJ, COLLECTOIHIASE VOLTAGE

COLLECTOR CURRENT

ON VOLTAGE

COLLECTOR SATURATION REGION

~

0.4 H--t-tti-tHtl-t-t-t-ttttttt-----tHttitttr---t-r-Hi1tII

~

i

0.3 r+\++tttfllHrHttHtII--fl"\tt
,tttffil-t-HitttI

~ 02 l--N-fflltlt---,lf-1i

MPSA75·

PNP EPITAXIAL
SIJ,.ICON DARLINGTON TRANSISTOR·

DC CURRENT GAIN

SAFE OPERATING AREA
10000

1000K
500K
300K

500

f---

Vee_
3000

100pS

1mB

'\.

"-

~

~

.~

I
3

5

10

30 50

I

100

.'-.

LI

II

0
300

1000

i'

10

30

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
10
_100010

It

100

I

_

3

•

VB.(m)

W(

I

.0.1

1
30

50

100

Ie (mA), COUEC:roR CURRENT

c8

100

BASE-EMITTER ON VOLTAGE

,
200

10

50

. V.. (VI, COLLEClOII-EMITTER 1IOLll'GE

Ie (mA), COLLEc:IOR CURRENT

1

1\

.~

30

1K

I\.

"~

50

I--

51(

3K

\.

18,

r--

SAMSUNG SEMICONDUCTOR

300

o

0.4

o.a

1

1.2

1.8

2.0

2.4

VIlE (V), BASE-EMITTER VOLTAGE,

644

PNP EPITAXIAL
SILICON DARLINGTON TRANSISTOR·

MPSA76
DARLINGTON TRANSISTOR
• Coliector·Emltter Voltage: VCES'=sov
• Collector Dissipation: Pc (max)=62SmW

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

. Rating.

Unit

VCES
VEeo
Ic
Pc
Tj
Tstg

50
10
500
625
150
-55-150

V
V
mA

Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
ColI!'Clor Dissipation
Junction Temperature
Storage Temperature

mW
°C

OC

• Refer to MPSA75 for graphs
1-. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain

BVcEs
BVCBO
ICBO
lEBO
ICES
hFE

Collector-Emitter Saturation Voltage
Base-Emitter On Voltage

Vcdsat)
VeE (on)

c8

SAMSUNG SEMICONDUCTOR

Test Conditions

1~=100~,VBE=0
IE=O
Vce =40V,IE=0
VeE =lOV,lc =O
VCE =40V, VeE =0
Ic =10mA, VcE =5V
Ic=100mA, VcE =5V
Ic=100mA,le=0.lmA
Ic=100mA, VcE =5V
Ic~l00~,

Min

lYP

Max

Unit

100
100
500

V
V
nA
nA
nA

1.5
2

V
V

50
50

10K
10K

645

......... 1:......

I'\A."''''

SILICON ·DARLINGTON TRANSISTOR:'
DARLINGTON TRANSISTOR
TO-92

• Collector-EmiHer Voltage: Veo =60V
• Collector Disslpatio~: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic

I

Symbol

Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipatiori
Junction Temperature
Storage Temperature

I

VeEs
VEBO
Ie
Pe
Tj
Tstg

Rating
60
10
500
625
150
~55-150

I

Unit
V
V
mA
mW
·C
·C

• Refer to MPSA75 for graphs
1 Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (TA=25°C)
Characteristic

Symbol

Collector-Emitter Brel;lkdown Voltage
Collector-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain

BVeEs
BVeBC
leBo
lEBo
Ices
hFE

Collector-Emitter Saturatiofl Voltage
Base-Emitter On Voltage

VeE (sat)
VBE (on)

c8'SAMSUNG

S~MICONDUCTOR

Test Conditions
Ie =100j,A, VBe = 0
Ie =100pA, IE =0
VeB =50V, IE =0.
. VBE =10V, Ie =0
VeE =50V, VBE=O
le=10mA, VeE =5V
le=100mA, VeE =5V
le=100mA,ls=0.1mA
le=100mA, VeE =5V

Min

Typ

Max

60
60

Unit

100 .
100
500

V
V
nA
nA
nA

1.5
2

V
V

10K
10K

646

MPSA92/93

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR'
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage : MPSA92
MPSA93
Collector-Emitter Voltage: MPSA92
MPSA93
Emitter-Base Voltage
Collector Cumint
Collector Dissipation (T.=25°Cf
Derate above 25°C
Collector Dissipation (Tc=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature

Symbol
VCBO
VCEO
VEBO
Ic
Pc
Pc
Tj
Tstg

Rating

Unit

-300
-200
-300
-200
-5
-500
625
5
1.5
12
150
-55"'150

V
V
V
V
V
mA
mW
mW/oC
W
mW/oC
°C
°C

I

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25 ° C)
Characteristic
Collector Base Breakdown Voltage
• Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current

Symbol
MPSA92
: MPSA93
MPSA92
MPSA93
MPSA92
MPSA93

BVCBO

Ic= -100,..A, IE=O

BVcEo

Ic= -1 mA, le=O

BVEeo
ICBO

IE=-100,..A, Ic=O
Vce=-200V, IE=O
Vce= -16011., IE=O
VEe 'C'-3V, Ic=O
V~E=-10V, Ic=-1mA
VcE =-10V,lc =-10mA
VCE=-10V,lc=-30mA
Ic =-20mA, le=-2mA
Ic =-20mA, le=-2mA
VcE =-20V,lc=-10mA
f=100MHz
Vce =-20V, IE=O
f=1MHz

Emitter Cutoff Current
• DC Current Gain

lEBO
hFE

·Collector-Emitter Saturation Voltage
• Base-Emitter Saturation Voltage
Current Gain Bandwidth Product

VCE (sat)·
VeE (sat)·

Collector Base Capacitance

fr
MPSA92
: MPSA93

Test Condition

Ccb

Min

Max

Unit

-0.25
-0.25
-0.10

V
V
V
V
V
y.A
/AA
/AA

-300
-200
-300
-200
-5

25
40
25
-0.50
-0.90
50
6
8

V
V
MHz
pF
pF

• Pulse Test: PW:-;;300/As, Duty Cycle.<;2%

c8

SAMSUNG SEMICONDUCTOR

647

PNP EPITAXIAL SILICON TRANSISTOR

·MPSA92193

SATURATION VOLTAGES

DC CURI'IENT GAIN
1000

-10000
Va; 10V

!i:

500

~- ... 5000

200

~

r'::

50

i

II

> -2000

~

100

i!!

le-l0'IB

I

0

VcE(satl

Illr
~~llJat)

c
.m

S
g

\

20

-200

1-100

>
~

••>'Ii

-50

-20

-10

1

1

5

10 -20

-100 -200

-1A -2A -SA-lOA

-1 -2

-5 -10-20 -50 -100

-500 -1A-2A -SA-lOA

1.(mA). COLLECTOR CURRENT

fc(!"A). COLLECTOR CURRENT

CAPACITANCE

. CURRENT-GAIN-BANDWIDTH PRODUCT
100

1000
VeE -2aV

f-l00MHz
50

.....
Cb

i'- .... 1-0

........
.....

1/
1/

Ceb

/'

10

-10

-5

~1

-20

-50

-100

0.1

0.2

0.5

10

20

50

100

Vca(V), COLLECTOfI.8ASE VOlTAGE

lc(mA). COLLECTOR CURRENT

ACTIVE-REGION SAFE
OPERATING AREA
-500

-200
-100

a~t=

~

1', I'

~

i

,,
"

!!i-50
CJ

THERM~

\

\

U

--'

A9}

'" " I' I" \
1'1'

1--1.5 WATT
" )V
lJMJTAT1ON@T.-25·C
"
825mW THERMAL

I

F=~MrrAT1ON@TA=25'C

~

MP8-A92

.-/

~BONDING WIRE UMITATION
I--~ECOND BREAKDOWN I
-5.0

-3.0

UMITATION
Tj=150'C

50

I

10

I'
-20

30

50

100

" 1',
200

300

Y.E(Y). COLLECTOR-EMITTER VOLTAGE

..

·cSC SAMSUNG SEMICONDUCTOR

648

MPSH10/11

NPN EPITAXIAL SILICON TRANSISTOR

VHF/UHF TRANSISTOR
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (Ta=25°C)
Derate above 25°C
Collector Dissipation (Tc=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Arnbien1

Symbol
VCBO
VoEo
VEBO
Pc
Pc
Tj
Tstg
Rth(j-c)
Rth(j-a)

Rating

Unit

'30
25
3.0
350
2.8
1.0
8.0
150
-55"'150
125
357

V
V
V
mW
mW/oC
W
mW/oC
°C
DC.

°CIW
°CIW

•

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Test Condition

Collector,Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breaj(down Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector Base CapaCitance
Collector Base Feedback Capacitance
MPSH10
MPSH11
Collector Base Time Constant

BVCBO
BVcEo
BVEBO
IcBO
lEBO
hFE
VCE (sat)
VBE(on)

Ic= 1OO,..A, IE=O
Ic= 1rnA, IB=O
IE=10,..A,lc=0
VcB =25V, IE=O
VEB =2V, Ic=O
VcE =10V,l c =4mA
Ic=4mA,IB=0.4mA
VCE=10V,lc=4mA
VcE =10V, Ic=4mA, f=100MHz
VCB= 1 OV, IE=O, f';" 1 MHz
VcB=10V, IE=O, f=1MHz

c8

h
.Ccb
Crb

Min

SAMSUNG SEMICONDUCTOR

VCB =10V, Ic=4mA, f=31.8MHz

Unit

100
100

V
V
V
nA
nA

30
25
3.0

60
0.5
0.95
650
0.7
0.35
0.6

CC'rbb'

Max

0.65
0.9
9.0

V
V
MHz
pF
pF
pF
ps

649

MPSH10/1-1

NPN EPITAXIAL SILICON TRANSISTOR
-COMMON-BASE Y PARAMETERS VB FREQUENCY
(Vcs=10V, Ic=4mA, T.=25°C) Ylb, INPUT ADMITTANCE
RECTANGULAR FORM -

POLAR FORM

o

130
120
.11 0

-10

0
0
0

-20

.............

I

--

..........

I

. 1.

r-.....

0

0

0
0
100

200

300

-40

........

""

0

400 500

"- '-...
700

" """.......

-bib

0

,.

1000M~

oS -30

lIIb

.........

-50

-60

700

1000

o

10

20

30

....::

40

200 100

50

60

70

80

glb(mmhoal

~MHz), FREQUENCY

Y'b, FORWARD TRANSFER ADMITIANCE
POLAR FORM

RECTANGULAR FORM

90

100
0

60

....

Or--....
0

Ot.--" ~
0

"

0

t-..

I
I

"'-

- g "........

0
0

'"

0
0

l.

./ ~

"- I"

f"o. t--....

600

30

I'\.

20

1000

0
300
400 500
I(MHl), FREQUENCY

~ "MHz

0
200

400'

50 100
40

........

-30
100

0

700

1000

70

60

SO

40

30

20

10

gfb(mmhoo)

0

-10 -20 -30

y;", REVERSE TRANSFER ADMITIANCE
POLAR FORM

RECTANGULAR FORM

MP8--Hl1

I

Ij

/-

17
. . .v
i...........

o --'" ~ ~

I,.;

I............

200

300

100
200

-2.0

400

LI

V

1°-

"'"

...

-3_0
700
-4.0

::l;
400 500

700

ItMHz), FREQUENCY

ciS

-1.0

Mrs- H

~
0

!J.

/

SAMSUNG SEMICONDUCTOR

1000

-5_0
-2.0

1000MHz

1.6 -1.2

0.8

0.4

0

0.4

0.8

1.2

1.6 2.0

g",(mmho8I

650

NPN EPITAXIAL SILICON TRANSISTOR

MPSH10/11

Vol>, OUTPUT ADMITTANCE
POLAR FORM

RECTANGULAR FORM
16
14

I

to

!

I

6.0

~

V
~

4.0

i-

Or-- l7'000MHZ

ig

[7

7.0

5.0

4

I

8.0

c

5

2

9.0

8. 0

l.

V

J 700
6.0

./

3.0

4.

./

2.0

~
1.0
o

100

~

200

300

--

700

400 500

.~
200

2.0

100

o
o

1000

2.0

4.0

8.0

B.O

'.

10

gob (mmhoo)

f(MHZ), FREQUENCY

DC CUI'IRENT GAIN
10000

1000
VCE

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
Ic 1DIs

iiSV

500

5000

!2000

>

8=

V,,(sat)

0

100

0

500

S

0

.;: 200

g.

0

,

5

~

60

2

J

20

100
VcEisa1)

~

1
0.1 0.2

0.5 1

5

10 20

50 100 2005001000

10
0.1 0.2

0.5 1
Ic(mA~

1c(mA), COLLECTOR CURRENT

5

10 20

50 100 200 5001000

COLLECTOR CURRENT

CURRENT GAIN BANDWIDTH PRODUCT
10060

vee

10V

f=100MHz

0

0

10

20

50

100

1c(mA), COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

651

NPN EPITAXIAL SILICON TRANSISTOR
CATV TRANSISTOR··
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

,

Collector-Base Voitage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (T.=25?C)
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Ambien

Symbol

"Rating

. Unit

Vcoo
VCEO
VEBO
Pc

20
15
3.0
625
5.0
150
-55"-'150
200

V
V
V
mW
mW/oC
°c
°c
°C/W

Tj
Tstg
Rth(j-a)

1. ,Base 2. Emitter 3. Collector

.ELECTRICAL CHARACTERISTICS (Ta= 25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
. DC Current Gain
Collector Emitter Saturation Voltage
Current Gain Bandwidth Product

BVcoo
BVcEo
EWEBO
Icoo
hFE
VeE (sat)
fr

Ic=1QO/-lA, IE=O
Ic=1mA,le=0
IE=10/-lA, Ic=O
Vce= 15V, IE=O
VCE = 1 OV, .1~=5mA
Ic=10mA, le=1mA
VCE= 1 OV, Ic=5mA
f=100MHz
Vce=10V, IE=O, f=1MHz·
VcE =10V,lc=5mA
f=1KHz
Vcc=12V, Ic=5niA
Rs=500 ,f=200MHz
Vcc=12V, Ic=5mA
Rs=500, f=200MHz

20
15
3.0

Collector-Base CapScitance
Small Signal Current Gain

Ccb
hfe

Noise Figure

NF

.Amplifier Power Gain

c8

Gpe

SAMSUNG SEMICONDUCTOR

Typ

Max

Unit
V
V

100
250
0.5

25
800
0.3
30

V
nA
V
MHz

0.9

pF

6.0

dB

I

24

dB

652

MPSH17

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT-GAIN

CURRENT GAIN BANDWIDTH PRODUCT
VCE

=

V

1000:_,,_
500

10000
VCE 10V
f 100MHz

.... 5000

~

..

i2000

r:mM.mt~.
g

1

10_".
20 ~++~fIlI--+++++I+H-+f-f+l+II-++H+f+!l

10~.1~0~.2~0~5~1~~~5~1~0~2~0~50~1~00~2~00~50~0~'000
. Ic(mA). COLLECTOR CURRENT

10000

0

E
!
0

!iii

100
50

I

if

20
'0 ,

10

20

50

100

lc{mA). COLLECTOR CURRENT

•

BASE.£MITTER SATURATION VOLTAGE
COLLECTOR.£MITTER SATURATION VOLTAGE
Vee" 10-18

~5000
~

~

2000

Z

~1000

~

500

i

200

!

100

l;So

Vse (sat)

./
~

V

E

sat)

50

~

~ .20
10
0.1

0.5

1
Id!"A~

c8

5

10

20

50 100 200 5001000

COLLECTOR CURRENT

SAMSUNG SEMICONDUCTOR.

653

'MPSH20

NPN EPITAXIAL SILICON TRANSISTOR

VHF TRANSISTOR
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T.=25°C)
Derate above 25°C
Collector Dissipation (Tc=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambien1

Symbol
VCBO
VCEO
VEBO
Ic
P'c
Pq
Tj
Tstg
Rth(j-c}
Rthij-a}

Rating

Unit

40
'30
4.0'
100
350
2.81
1.0
8.0
150
-00"'150
83.3
357

V,
V
V
mA
mW
mW/oC
W
mW/oC
°C
°C
°C/W
°C/W

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Characteristic

Symbol

Test Condition

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Current Gain Bandwidth Product

BVcao ,
BVcEo

40
30
4,0

fr

Collector-Base Capacitance
Collector' Base Time Constant

Ccb
·Cc·rbb'

Ic=100IlA, 'E=O
Ic=1mA,IB=0
IE= 1OIlA,lc=0
VCB= 15V, 'E=O
VcE =10V, 1c;=4mA
VCE=10V, Ic=4mA
f=100MHz
VcB=10V, 'E=O, f=1MHz
VCB=10V,IE=4mA
f=31.8MHz
VCE=10V, Ic=4mA
Oscillator injection=20OmV

Conversion Gain (213 to 45 MHz)

c8

BVE~
lcao
hFE

GCE

SAMSUNG SEMIC?NDUcrOR

. Typ

Max

50
25
400

620
0.5
10

18.

23

Unit·
V
V
V
nA
MHz

0.65

pF
ps
dB

654

NPN- EPITAXIAL SILICON TRAN'SISTOR

MPSH20
DC CURRENT GAIN
1000

i

200

I

50

g

20
10

2000

~ 1000

100

1

BASE-EMITIER SATURATION VOLTAGE
COLLECTOR-EMITIER SATURATION VOLTAGE
Ie 1 0-18

~ 5000

500

~

10000

VeE"'" 10V

;

500

!

200

!

~

50

~

20

1
0.2

0.5

1

2

5

10

20

10
01

5001000

50 10c..

/

100

~

O.~

Vee (sat)

0.5

1

2

CURRENT GAIN BANDWIDTH-PRODUCT
10000

'"

2000

t!Z

500

I.

200

Z

""::>

It
0'

100

(,)

11

i

50
45

3

0.7

--

c..

r-......

c..

05

..... r-.

.

5

10

20

50

03

100

0.1

z

35

"

30
25

~

i

15

"

10

0.5

10

2.0

5.0

10

20

50

V.l.v), REVERSE VOLTAGE

CONVERSION GAIN CHARACTERISTICS
VARIATION WITH COLLECTOR CURRENT

CONVERSION GAIN CHARACTERISTICS
VARIATION WITH INJECTION LEVEL
40

~~iJ;ecoon'-200~V

f oac""'258MHz
fmg"'213MHz

100

VCE-10Vdc'
1c=4.0mAdc

35 _!8Ig-213MHz
fj=-45MHz

ao
z

C

20

0.2

lc(mA), COLLECTOR CURRENT

40,J;""45MHz

C

- - --

i.-o"""

V

(,)

"0

25

/'

Z

m
>
Z

20

0

15

f

10

(,)

~

/

io-""

V

V

50

1.0

2.0

3.0

4.0

lc(mA), COLLECTOR CURRENT

c8

I

20
1

~

r-

1.0

50

10

I

500 1000

20

j!:

UI

50 100

T.-25°C

g1000

"

20

CAPACITANCES

8If

i...

10

COLLECTOR CURRENT

30

Ve, 10V
f=100MHz

U5000

~

5

lc(mA~

lc(mA), COLLECTOR CUHRENT

Ve,(sat)

SAMSUNG SEMICONDUCTOR

5.0

0

100

200

300

400

V((mVJ, OSCILLAnON INJEcnON

655

NPN EPITAXIAL SILICON TRANSISTOR

MPSH20

COMMON-EMmER y PARAMETERS
(lc=4.0mA, Vce=10V, T.=2S0C)
INPUT ADMITTANCE

/I

24

2

VI
J

0

9"
0

V
L

2

/'

!.............

V
4.0

COMMON-EMITTER Y PARAMETERS
IIc=4.0mA, VCE=10V, T.~2S0C)
REVERSE TRANSFER ADMITTANCE

=o;.i/

/

........

/

./

""

~

./

~

~

l- I-'"
-gre

o
40

P

60

80

100

150

200

300 400

!(MHz), FREQUENCY

o

4U

60

80

•

100

~MHz),

200

2. 4

120

r.....

I

ore
~

b,.

V

i"'...
V

'"

"""

.

~

'\

eo

./
o. 4

o
80

100

200

/

./

300 400

!(MHz), FRE\lUENCY

c8

.v

r-..
\

\
40

300 400

FREQUENCY

COMMON-EMITTER Y PARAMETERS
(lc=4.0mA, VYE=10V, T. =2S 0C)

COMMON-EMITTER Y PARAMETERS
(lc=4.0mA, VCE=10V, T.=2S0C)
J=ORWARD TRANSFER ADMITTANCE

o

1/

7

SAMSUNG SEMICONDUCTOR

40

-

i;"

""

908 /

.,:...;;.-"

60

80

100

----

200

300 400

!(MHz), FREQUENCY

656

MPSH24

NPN EPITAXIAL SILICON TRANSISTOR

VHF TRANSISTOR
TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=2S0C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T.=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Ambien

Symbol
VeBO
VeEo
VEBO
Ie
Pc
Tj
Tstg
RthU-a)

Rating

Unit

40
30
4.0
100
350
2.8
135
_55-135
357

V
V
V
mA
mW
mW/oC
°C
°C
°C/W
1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Current Gain Bandwidth Product

fr

Collector-Base Capacitance
Conversion Gain (213 to 45 MHz)

Ccb
GCE

Conversion Gain (60 to 45 MHz)

c8

BVeBO
BVcEo
BVEBO
IcBO
hFE

I GCE

SAMSUNG SEMICONDUCTOR.

Test Condition

Min.

Ie'" 1 OO"A, IE=O
Ic=1mA,le=0
IE= 1 O~, Ic=O
Vce=15V, IE=O
VCE=10V,lc=8I]1A
VCE=10V,lc=8mA
f=100MHz
Vce=10V, IE=O, f=1MHz
Vcc=20V, Ic=8mA
Oscillator injection= 150mV
Vcc =20V, Ic=8mA
Oscalator injection= 150mV

40
30
4.0

Typ

30
400

620

19

0.25
24

24

29

Max

Unit

50

V
V
V
nA
MHz

0.36

pF
dB

~

dB

657

MPN EPITAXIAL SILICON. TRANSlsrQR

'MPSH~4
j.

CONVERSION GAIN CHARACTERISTICS
Rs=RL=502, iH=44MHz, B.W=6N1Hz)
CONVERSION GAIN versus
CONVERSION GAIN _sus INJECTION LEVEL
COLLECTOR CURRENT
(Vc~=20V,

40

0

'8Q=6~MH2' I

f'>S<. == )OMHZ

vr-

30

~

~.~

i

-~

f'ilg-=213MHl, fow:=275f1 Hz

'1'

u

!

-

20

' .. -6JMHz,

•
I

/

2.0

4.0

6.0

lc(mA~

8.0

I

0

i

10

12

14

16

00

COMMON·BASE Y PARAMETERS
(VCE=15V, T. = 25°C)
REVERSE TRANSFER ADMITTANCE
O. 1

~'
40r-~--~~--+--+--1-~--~-~~~
13M z
,

_

-

-

400

100
200
300
V,(mVj. OSCILLAnON INJEcnON

COLLECTOR CURRENT

50r--r--r--T~~~~~~~-r--r-~

z

f8l(l=213MHz. foso=-275MHz

1c=8 OmAdc

INPUT ADMITIANCE

Nc

-

r--

""'"

0sc'nJi'5Omf""
00

L~1o.l,Hz

~ I--

30

60MHz

,

"=4~Hzl

8
-I>",

Ole
6

gre

4

o
o

°0~02.~0~4~.0~6~.0~8~.0~'~0~7.'2~7'4~~'~6~'~8~20
Ic(mA~

V
120
~.

~

...~
f

J!

I

80

I

V

" \.

/

B.O

8.0

10

12

14

16

18

20

COLl.ECTOR CURRENT

OUTPUT ADMITIANCE

1. 0
f=45MHz

~ o. 8

g

i!i •
C 0.6

/

/

i/gte

If

/"

/

I

V

40

o
o

/

4.0

Ic(m~

FORWARD TRANSFER ADMITIANCE

If:

2.0

COlLECTOR CURRENT

1=4 MHz

i

mmho

b.

;;"-

200

< -0.01

V~

J

V

goo

0.4

.....

'0.2

./

V· V
~

....

V

V
2.0

4.0

6.0

Ic(m~

8.0

10

12

14

16

COLLECTOR CURRENT

CS'SAMSUNG SEMICONDUCTOR

18

20

2.0

4.0

6.0

It(mA~

8.0

10

12

14

,16

18' 20

COLLECTOR CURRENT

658

NPN EPITAXIAL SILICON TRANSISTOR

.MPSH24
DC CURRENT GAIN
1000

Vce- 10V

10000

BASE·EMIITER SATURATION VOLTAGE
COLLECTOR-BASE SATURATION VOLTAGE
c , 'I

500

200

0

100

0

50

0

g

0

0

J

10

0

5

0

~

i
~

2

0

1

10
01

0.1 0.2 0.5 1

2

6

10

20

50 100 200 5001000

IclmA~ COLLECTOR CURRENT

BE (sal)

veeC"')

0.5

1

2

Ie (mA~

5

10

20

50 100 200 5001000

COLLECTOR CURRENT

I

CURRENT GAIN BANDWIDTH PRODUCT
10000
CE 10V
f~10 OMHz

0
0
0
0
0

0

0
0
IclmA~

c8

10
20
COLLECTOR CURRENT

50

SAMSUNG SEMICONDUCTOR

100

659

JMPSL01,

NPN EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR
TO-92

• Collector-Emitter vqltage: Vcm =12OV
• Collector DIssipation: Pc (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
I

Symbol

Rating

Unit

Vevo
Veeo
VEBO
Ic
Pc
TJ
Tstg.

140
120
5.
150
625
150
-55-150

V.
V
V
rnA
mW

Collector-Base Voltage
.Colle,ctor-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temp~rature .
Storage TemperatiJre

DC
DC
1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
"Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-Off Current
"DC Current Gain
Collector-Emitter Saturation Voltage

Symbol
BVcEO

BVCBO
BVEBO

.ICBO
lEBO
hFE
Vee (sat)

Base-Emitter Saturation Voltage

VeE (sat)

Collector-Base Capacitance

Ccb

"Current Gain Bandwidth Product

h

Test Conditions
Ic=1mA,IB=0
Ic =100pA,IE=0 ..
IE=10pA,le=0
VCB=75V,IE-0
VBE =4V, le"'O
.lc .. 10mA, Vce=5V
le=10mA,IB=1mA
Ic=50mA,IB=5mA
Ic=10mA,le"'1mA
"lc=50mA,le-5mA
VcB =1OV,IE-0
f=1MHz
. Ic .. 10mA, VCE z 10V
f=.100MHz

Min

Typ ..

Max

Unit

1
100

V
V
V
pA
nA

120
140
5

50

300
0.2
0.3 .
1.2
1.4

8

60

V
V
V
V
pF
MHz

" Pulse Test: Pulse Widths300j.lS, Duty Cycles2% .

c8

SAMSUNG SEMICONDU~R

660

MPSL01

NPN EPITAXIAL SILICON TRANSISTOR
DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT '
1000

'I·

1000

500

l-

r--- rVcE-5V

~VCE_1W

-

I

300

-

VI-'"

3'

0

1

0.1

0.3.0.5

3

5

10

30 50

100

Cl.5

0.1

1

3

10

30

100

Ie (mA), COLLECIOII CURRENT

Ie (mA), COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

COLLECTOR-BASE CAPACITANCE

10
12

I---

ic-101e

-

IEJ

!
1

f·1MHz

10

I--

I" I......

VBE(sat)

r---....

1

111111

0.01
0.1

D.3

o.s

1

r--

0
3

5

10

30 50 100 .

Ie (mA~ COLLECTOR CUAMNT

c8

....

VeE (sat)

I--

SAMSUNG SEMICONDUcroR .'

0.1

Q.3

Cl.5

10

20

Vco(V), COLLECIOII-BASE VOLTAGE

661

PNP EPITAXIAL SILICON TRANSISTOR

MPS151
AMPLIFIER TRANSiStoR

TO-92

• Collector-Emitter Voltage: Vc~o =100V
• Collector Dissipation: P~ (max)=625mW

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Rating

Unit

Vceo
VCEO
VEeo
Ic
Pc
TJ
Tstg

100
100
4
600
625
.150
-55-150

V
V
V
mA
mW
°C
°C

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
. Junction Temperature
Storage Temperature
• Refer to 2N5401 for graphs

1. Emitter 2. Base 3. Collecfor

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Test Conditions

Min

"Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
"DC Current Gain
'Collector-Emitter Saturation Voltage

BVcEo
BVcBO
BVEeo
Iceo
IEeo
hFE
VCE (sat)

100
100
4

"Base-Emitter Saturation Voltage

VeE (sat)

Ic=1mA,le=0
'c =100pA,IE=0
. IE =10pA, Ic =0
Vce =50V,IE=0
VEe =3V,lc =0
Ic=50mA, VCE=5V
lo=10mA,le=1mA
Ic=50mA,le=5mA
ic =10mA,le=1mA
Ic=50mA,le=5mA
Vce =10V,IE=0
f=1MHz
Ic =10mA, VCE=10V
f=100MHz

Output Capacitance

Cob

Current Gain Bandwidth Product

h

40

Typ

Max

1
100
25Q
0.25
0.3
1.2
1.2

8
60

Unit
V
V
V
pA
nA
V
V
V
V
pF
MHz

" Pulse Test: Pulse Widths;300/AS, Duty Cycles2%

c8

SAMSUNG SEMICONI?UCTOR

662

S88050

NPN EPITAXIAL SILICON TRANSISTOR

·2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
. B PUSH-PULL OPERATION~

TO-92

• Complimentary to 558550
• Collector Current Ic =1.5A
• Collector Di.ssipation Pc=2W (Tc=25°C)

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector· Base Voltage
Collector-Emitter Vpltage
Emitter·Base Voltage
Collector Current
Collector Dil\sipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

40
25
6
1.5
1
150
-65"-'150

V
V
V
A

W
1. Emitter 2. Base 3. Collector

°C
°C

ELECTRICAL CHARACTERISTICS (Ta= 25 °C)
Characteristic

SymbOl

Test Conditions

Min

Collector· Base Breakdown Voltage .
Collector· Emitter Breakdown Voltage
Emitter·Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Current Gain-Bandwidth Product

fr

le= 1 OO,..A, IE=O
Ic=2mA, IB=O
IE=100,..A,lc=0
VCB =·35V, IE=O
VEB =6V,lc=0
VcE =1V,lc=5mA
VCE=1V,lc=100mA
VcE =1V,lc=800mA
Ic=800mA, IB=80mA
le=800mA,IB=80mA
VcE =1V,lc=10mA
VcB =10V,IE=0
f=1MHz
VcE=10V,lc=50mA

40
25
6

Collector· Emitter Saturation Voltage
Base·Emitter Saturation Voltage
Base·Emitter Voltage
Output Capacitance

BVCBO
BVcEo
BVEBO
ICBO
lEBO
hFE1
hFE2
hFE3
Vce(sat)
VBE(sat)
VBE
Cob

hFE

45
85
40

100

Typ

135
160
110
0.28
0.98
0.66
9.0
190

Max

Unit

100
100

V
V
V
nA
nA

300
0.5
1.2

V
V

1

V
pF
MHz

(2) CLASStFlCATJON

Classification
hFE (2)

B

C

0

85-160

120·200

160-300

663 .

SS8050

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

5

1/

04

,

I.

IV

-

500

VCE=1V

300

~

I. 2rmA

IV

2IV

r-

la-'15mA

r/

1

I
3rm~~

-

Is-2.5mA

II/.

3

DC CURRENT GAIN
1000

I

I. '(mA I--

(I

.'"

100

Z

a:
a:

w

50

<>
<>
c

::>

30

i

10

'3 _

V

_

Is-05mA

I
04

08

12

1~~~~~~~~~~~~~~~

01 03

1.6

05

1

3

V.ElV), COLLECTOR-EMITTER VOLTAGE

BASE-EMITTER ON VOLTAGE
100

VeE

0

5

10

3050

1003005001000

lc(mA), C.oLLECTOR CURRENT

,,,=

BASE-EMITTER'SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
0

0

a

0

a

Ic=101s

VBE(sat)

5
3

1
Vce(sat)

O. 5

o. 3

II

o. 1

o

0.2

"'"

0

06

04

08

1.0

1

12

0.3

a5

3

V.E(V), BASE-EMITTER VOLTAGE

5

10

3050

100 300500 1000

lc(mA), COLLECTOR CURRENT .

CURRENT GAIN-BANDWIDTH PRODUCT

COLLECTOR OUTPUT CAPACITANCE

0
Vee

0

10V

0
f lMHz

.....

I---i"""

le- O

0

0

0

0

0

0

a

a

5

5

3

3

3

10

30

50

100

lc(mA), COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

300

r--

3

5

10

30

50

100

V.g(1/), COLLECTOR-BASE VOLTAGE

664

SS8550

PNP EPITAXIAL SILICON TRANSISTOR

2W OUTPUT AMP~IFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION .

TO·92

• Complimentary to 5580S0
• Collector Current Ic=-1.SA
• Collector Dissipation Pc=2W (Tc=2S·C)

ABSOLUTE MAXIMUM RATINGS(Ta =25°C)
Characteristic

Symbol

Collector· Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

-40
-25
-6
-1.5
1
150
-65"'150

V
V
V
A

•

W

'c
'c

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 0 C)
Characteristic

Symbol

Test Conditions

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

Ic=-100!,A, IE=O
Ic=-2mA, IB=O
IE=.-100!,A,lc=0
VCR=-35V.I,=0
VEB =-6V, Ic=O
VC.=- IV, Ic=-5mA
VCE = -1 V, Ic= -1 OOmA
VcE =-1V,lc=-800mA
Ic=-800mA,IB=-80mA
Ic =-800mA, IB=-80mA
VcF =-1V.lc=-10mA
VcB =-10V.I.=0

-40
-25
-6

Collector-Emitter Saturation Volt~ge
Base-Emitter Saturation Voltage
Base Emitter Voltage
Output Capacitance

BVcBO
BVcEo
BVEBO
ICBO
lEBO
hFE1
hFE2
hc ,3
VCE(sat)
VB.(sat)
VB.
Cob

Current Gain-Bandwidth Product.

fr

Vc.=-10V, Ic=-50mA

100

hFE

I t=lMHz

45
85
40

Typ

Max

.Unit

-100
-100

V
V
V
nA
nA

170
160
80
-0.28
-0.98
-0.66
15
200

300
-0.5
-1.2
-1.0

V
V
V
pF
MHz

(2) CLASSIFICATION

Classification

B

C

0

hF• (2)

85-160

120-200

160-300

c8

SAMSUNG SEMICONDUCTOR

665

PNP EPITAXIAL 'SILlCON\ TRANSistOR

888550

, STATIC CHARACTERISTIC
-05

, DC CURRENT GAIN

I

4

fI

V

2

500

I.

r-0mAI-

I.

r5m~

I.

fOm1=

I,

-t5ml~

I,

I'"

VeE -1V

300

I~100~~~~~~~~~~~!!~~~~~!!I
30~~HH+Ht-~~~Hr~r+rH+H-++4~ttH
~

!Z

50

g

i

le=-11.0mAI

"

-0, 1

1 0 0 0 m_ _

IB",,-a.5mA _
1

!J

3

1

I~-' t-0ml-

/'

IO

_

C.SmA

I I
-04

-1,6

-1.2

-0,8

-2

-01

-0.5

-1

VeaV), COLLECTOR-EMITTER VOLTAGE

w-

Vee

g

II!
!5() -1 0

~:::I

J

Z

~-100 0

-5

~ -500

3

-300

~

II

8

~

i-Hl

~ - ,1

i

~

-0, 5

J=:

-0, 3

I

-0, 1

o

le=tOle

tIj-500 0

~-3000

-30

!Z
II:

-0,2

-0.4

-0,6

-0,8

-1

VSE(sat)

0

0

VCE(sat)

lA'"

0

l.-+1"1

-1 0
-0.1

-1.2

II

-0.5' -1

CURRENT GAIN-BANDWIDTH PRODUCT

10V

VeE

~ 500

50

:c 300

'8

;

--

f==1MHz
IE=O

30

V

I

~

I-'

j

50

..........

0

r-.... t-...

5

30

10
-1

-3 -5

-10

-30-50'-100

-300

IdmAl, COLLECTOR CURRENT

c8

-500-1000

100

g

!it
lI!

-10 -30-50 -100

COLLECTOR OUTPUT CAPACITANCE

1000

100

-3 -5

IdmAl, COLLECTOR CURRENT

V"(V), BASE-EMITTER VOLTAGE

I~

-50Q-1000

BASE-EMITIER SATURATION VOLTAGE
COLLECTOR EMmER SATURATION VOLTAGE

BASE·EMITIER ON VOLTAGE

-50

-3 -5 -10 -30-50 -100

IdmAl, COLLECTOR CURRENT

-100

)

_

SAMSUNG SEMICONDUCTOR

-1

-3 -5 -10

-30-50 -100

-300

Vea(vl, COLLECTOR-BASE VOLTAGE

666

SS9011

NPN EPITAXIAL SILICON TRANSISTOR

AM CONVERTER, AM1FM IF AMPLIFIER
GENERAL PURPOSE TRANSISTOR

TO-92

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcso
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

50
30
5
30
400
150
-55"'150

V
V
V
rnA
mW
°C
°C

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta=25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Output Capacitance

BVcBO
BVcEo
BVEBC
IcBC
lEBo
hFE
VCE(sat)
VBE
C9b

Current Gain-Bandwidth Product
Noise Figure

h

hFE

NF

Test Conditions

Min

Ic=100!,A,IE=0
Ic=1mA,IB=0
1~=1 OO!,A, Ic=O
VcB =50V, IE=O
VEB=5V, Ic=O

50
30
5

V~r=5V. 1~=1mA

28

Ic=10mA,IB=1rnA
VcE =5V, Ic=1mA
VCB= 1 OV, IE=O
f=1MHz
VcE =5V,lc =1mA
VcE=5V, Ic= 1.OrnA
f=1 MHz, Rs =5000

0.65

150

Typ

90
0.08
0.7
1.5
370
2.0

Max

100
100
198
0.3
0.75

4.0

Unit
·V
V
V
nA
nA
V
V
pF
MHz
dB

CLASSIFICATION.

Classification

0

E

F

G

H

I

hFE

28-45

39-60

54-80

72-108

97-146

132-198

.c8

SAMSUNG SEMICONDUCTOR

667

•

NPN EPITAXIAL SILICON TRANSISTOR

SS9011

DC CURRENT GAIN

STATIC CHARACTERISTIC'

11. ._

1000
500

VCE=5V

300

I-

Z

w

50

:::>

30

II:
II:

()
()
Q

'1

20

40

60

80

100

10

01

1000

30

100

300

1000

lc;(mA), COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT
1000
I-

Vae(sat)

~ 50a
~

a

i

~

I'

30a

VCE-5V

"

100

I:

1-'11

Vcc(sat)

I-

ifi
II!

a

B

a

I

1c=101B

a

10

5

1
3

.5

10

30

.50

Ic(mA), COLLECTOR CURRENT

c8

10

03

Vco(V), COLLECTOR-EMITTER VOLTJ\GE

SAMSUNC3 SEMICONO'UCroR'

100

03

3 5

10

30 50 100

300

1000

lc;(mA), COLLECTOR CURRENT

668

SS9012

PNP EPITAXIAL SILICON TRANSISTOR

1W OUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION.
•
•
•
•

TO-92

High total power dissipation. (PT=625rnW)
High Collector Current. (lc =-500mA)
Complementary to SS9013
Excellent lIFe linearity.

ABSOLUTE MAXIMUM

~ATINGS

Characteristic

Symbol

Collector·Base Voltage
Collector· Emitter Voltage
Emitter·Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcoo
VCEO
Veoo
Ic
Pc
Tj
Tstg

(Ta =2S0C)
Rating

Unit

-40
-20
-5
-500
625
150
-55"-'150

V
V
V
rnA

,mW

1 Emitter 2

Base 3

•

Collector

'c
'c

ELECTRICAL CHARACTERISTICS (Ta =25 °C)
Characteristic

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC C\lrrent Gain
Collector· Emitter Saturation Voltage
Base-Emitter Saturatioh Voltage
Base-Emitter On Voltage

hFE

Test ConditIon

Symbol

Ic=- 1OOIlA,IE=0
ic=-1mA,ls=0
IE=- 1OOIlA,lc=0
Vcs =-25V,IE=0
VEs=-3V, Ic=O
VcE=-1V,lc=-50mA
VcE=-1V,lc=-500mA
Ic=-500mA,ls=-50mA
Ic=-500mA,ls=-50mA
VcE =-1V,lc=-10mA

BVcoo
BVcEo
BVEoo
lcoo
IEoo
h FE '
hFE2
VCE(sat)
VSE(sat)
VSE(on)

Min

Typ

Max

-40.
-20
-5

64
40

-0.6

Unit

V

V

120
90
-0.18
-0.95
-0.67

-100
-100
202
-0.6
-1.2
-0.7

V
nA
nA

V
V
V

(1) CLASSIFICATION

Classification

0

E

F

G

H

hFd1)

64-91

78-112

96·135

112-166

144-202

c8

SAMSUNG SEMICONDUCTOR

669

S$$C)12 .•

. PNP EPITAXIAL SILICON TRANSISTOR·
STATIC CHARACTERISTIC

-50

/'

"
V
ir"

V

~

,.. I~=LJ

I'

V

V

I

:.,.....-

,... V

r'

-- --

Vc!-!..l~

30a

"-1150~

- I--

500

I

~I,~-JOO,.A

,.;.-

~ !--

~

DC .CURRENT GAIN
100a

"~-10~,.A

a
a

":,:-50,.A

a

-10

,,o
o

-1000

a
-10

-20

-50

-40

-30

-10

-30 -50

-100

-300 -500

Vce(V), COLLECTOR-EMITTER VOLTAGE

IclmA), COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT

-1000

VBE{sat)

w

~-500

~-300

II

z

j

Vi-"
/

tn-100

~

t

VCE(sat)

-50

il

> -30

J

-

0
-10

~

Ic=101B

-30

-50·' -100

IclmA~

c8

-300 -500

COLLECTOR CURRENT

SAMSUNG SEMICONDUCfOR

-1000

-1

-3-5 -10

-30

-100 -300 -1000 -3000 -10000

IclmA), COLLECTOR CURRENT

670

SS9013

NPN EPITAXIAL SILICON TRANSISTOR

1WOUTPUT AMPLIFIER OF POTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION .
•
•
•
•

10-92

High total power dissipation. (PT=625mW)
High Collector Current. (Ie = 500mA) .
Complementary to 889012
Excellent hFE linearity.

ABSOLUTE MAXIMUM ~ATINGS'(Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector·Emitter Voltage
Emitter-Base Voltage
Collector Current
ColleCtor Dissipation
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

40
20
5
500
625
150
-55"'150

V
V
V
mA
mW
°C
°C

ELECTRICAL CHARACTER;lSTICS (Ta
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain

BVCBO
BVcEO
BVEBO
ICBO'
lEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(on)

Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base,Emitier On Voltage

hFE

•

1. Emitter 2. Base 3. Collecfor

=25 °C)

Test Conditions

Min

Ic=100JlA.IE=0
Ic= 1 mAo IB=O
IE= 1 OOJlA. Ic=O
VCB=25V. IE=O
VEB=3V. Ic=O
VCE=1V.lc=50mA
VCE=1V. Ic=500mA
Ic=500mA. IB=50mA
Ic=500mA.IB=50mA
VCE=.1V.lc=10mA

40
20
5

64
40

0.6

Typ

Max

Unit
V

V.

120
120
0.16
0.91
0.67

100
100
202
0.6
1.2
0.7

V
nA
nA

V
V
V

(1) CLASSIFICATION

Classification

0

E

F

G

H

hFe(1 )

64·91

78·112

96·135

112·166

144·202

c8

SAMSUNG SEMICONDUCTOR

/

671

SS9013

8""

sl/

-

~

1

B

12

~

0
1

8

8

I

Sir'

-

'"

100a

~J'4o,.l

500

I I

VeE

300

Is=1201lA

1V

I

OJtA I-- I-.-- ",/ le=r

4

~

DC CURRENT GAIN

STATIC CHARACTERISTIC

,...-

20

i

NPN EPITAXIAL SILICON TRANSISTOR

~

io" 1s=80""

1'~60""

0

a

IB=j""

.4

~

I-- t-5

1s=120""

I

0
20

10

30

1

40

50

3

5

10

30 50 100

300

1000

3000

10000

Ic(mAI, COLLECTOR CURRENT

Vce(\I), COLLECTOR-EMITTER VOLTAGE

BASE·EMITTER SATURATION VOLTAGE
COLLECTOR·EMITTER SATURATION VOLTAGE

CURRENT GAIN·BANDWIDTH PRODUCT
fOOD

10000

f-

~=101B

VeE 6V

0

I"""0

vec(sat)

a
0

0

VCilj'1

0
0

.,.

I II

II

0
10

30

100

300

1
1000

3000

IclmA), COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

10000

10

30

-100

300

1000

3000

10000

IclmA), COLLECTOR CURRENT

672

SS9014

NPN EPITAXIAL SILICON TRANSISTOR

PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
10-92

• High total power dissipation. (PT=450mW)
.. High h.E and good linearity .
-- Complementary to 559015

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Rating

Unit

50
45
5

VCBAJ
VCEO
VEBAJ
Ic
Pc
Tj
Tstg

V
V
V
mA
mW
°C
°C

100
450
150
-55"'150

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturatio!) Voltage
Base-Emitter On Voltage
Output CapaCitance

BVcBAJ
BVcEo
BVEBAJ
ICBAJ
IEBAJ
hFE
VCE(sat)
V.E(sat)
VSE(on)
Cob

. Current Gain-Bandwidth Product
Noise Figure

h

hFE

NF

Test Conditions
Ic= 1 OOjJA, IE=O
Ic= 1mA, 1.=0
IE= 1 OOjJA, Ic=O
Vcs=50V, IE=O
VEs=5V, Ic=O
.VcE=5V,lc=1mA
Ic= 1 OOmA. IR=5mA
Ic=100mA.ls=5mA
VCE=5V. Ic=2mA
Vc.=-10V, IE=O
f=1MHz
VCE=5V,lc=10mA
VcE=5V, Ic=0.2mA
f= 1 KHz. Rs = 2KO

Min

Typ

Max

50
45
5

60

0.58

150

280
0.14
0.84
0.63

50
50
1000

0.3

Unit
V
V
V
nA
nA

2.2

3.5

V
V
V
pF

270
0.9

10

MHz
dB

1.0

0.7

CLASSIFICATION·

Classification

A

B

C

0

hFE

60-150

100-30b

200-600

400-1000

.c8

SAMSUNG SEMICONDUCTOR

673

•

889014

NPN EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

DC CURRENT GAIN

100

1000

90

1.~160,..4J '

....

80 f--

'"a:a:

70

...... 1.-120,..4

Z

io""

:>

0

....

....
'"
....
0

!--

40

U

~

j

50

----

:,.!--

\

~

Is=80",A

"--

IB"'60~A

30

iB

10 0

J

Ii0

\

g

Is=-401o(A

"

20

VCE-5V

300

z

~IB=100~A

u
a: 60
U

500

~11.c14.o_A

r-

0

IB-2O_A

I

10
10
10

20

40

30

3

50

5

V"'(V), COLLECT-EMITTER VOLTAGE

10

30 50

100

300

1000

le(mA), COtLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
1000

CURRENT GAIN-BANDWIDTH PRODUCT
1000

VSE(sat)

Vce=5V

0
0

.......

0

/

V

0

0

V

V

1\

Vce(sat)

0
0
lc""'201s

II

0

"

c8

3

5

10

30 50

100

300

lc(mA), COLLECTOR CURRENT,

SAMSUNG SEfteICONDUCTOR'

0
1000

3

5

10

30 50

100

300

1000

lc(mA), COLLECTOR CURRENT

674

PNP EPITAXIAL SILICON TRANSISTOR

SS9015

LOW FREQUENCY, LOW NOISE AMPLIFIER

TO-92

• Complement to SS9014

ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic

Symbol

CoHector-Base V~ltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vcso
VCEO

VEBO
Ic .
Pc
Tj
Tstg

Rating

Unit

-50
-45
-5
-100
450
150
-55"'150

V
V

V
mA
mW
°C
°C

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic

Symbol

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage·
Base-Emitter On Voltage
Output Capacitance

BVCBO
BVcEo
BVEBo
IcBO
lEBO
hFE
Vce(sat)
VBE(sat)
VBE(on)
Cob

Current Gain-Bandwidth Product
NOise Figure

fr

hFE

NF

Test Conditions
Ic=-100,..A,IE=0
Ic=-1mA,IB=0
IE,,:,-100,..A, Ic=O
VCB=-50V,IE=0
VEB =-5V, Ic=O
VcE =-5V,lc=-1mA
1~=-100mA. IR =-5mA
Ic=-100mA, 'B=-5mA
Vc.=-5V Ic=-2mA
VcB =-10V, 1.=0
f=1MHz
VcE=-5V,lc=-10mA
VCE=-5V.lc=-0.2mA
f=1KHz, Rs=lKU

Min

Typ

Max

-50
-45
-5'

60

-0.6

100

Unit

.

V

V
V

200
-0.2
-0.82
-0.65
4.5

-50
-50
600
-0.7
-1.0
-0.75
7.0

190
0.7

10

nA
nA
V
V

V
pF
MHz
dB

CLASSIFICATION

Classification

A

B

C

hFE

60-150

100-300

200-600

c8

SAMSUNG SEMICONDUCTOR

675

•

SS9015

PNP EPITAXIAL SILICON TRANSISTOR
STATIC CHARACTERISTIC

BASE-EMITTER ON VOLTAGE

-5 0

-100

-4 5

it
~

IB=-400tl~

k- ~ .--

--

I'
II"

-35

!!i0-30

~

~

Ia= -350~A
I

I I

Is=- 25O.u A

:§
,...b -2 5 '/
~
_r0-20

o

1-

1

5

-10 ~

-30

.

Is ""-300J,lA_

-

I--

-50

!.

-

o

I
I I
Is=-150IJA
Ile=-100,uA
I

Is=-200j.lA-

-

I

1-,0

-

I

~
t;

-5

~

-3

8

J

I

1

-0 5

Is--SOJ.lA

-03

-5
-0 1
-2

-4

-6

-8

-10 -12

-02

-14 -16 -18 -20

-04

Vc,(V), COLLECTOR-EMITTER VOLTAGE

DC CURRENT GAIN

500

Vc,

5V

8

a

-12

6V

V"

10 0

~

V

t-

a:

-1

CURRENT GAIN-BANDWIDTH PRODUCT

300

~

-08

1000

100 0

"ifi

-06

V,,(V), BASE·EMITTER, VOLTAGE

./

50
30

g

t-

1,0

,ifi

50

::>
0
~

30

a:
a:

5

":E'J:
1

10

-1

-01-03

-3 -5 -10 -30

-100

-95

-1

-3

-tOO 0

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
Ie -Ola

,-L1

VBE(sat)

"~-50a

-30

-10

COLLECTOR OUTPUT CAPACITANCE
20

w

-5

Ic(mA), C.oLLECTOR CURRENT

Ic(mA), COLLECTOR CURRENT

1

IE=O

o

a

>-30a

~

i

"5

>-10 0

g

~

"J

-5 0

'f3
-1

3

VCE(sat)

"

0

a

-01

......

1

-03-05 -1

-3 -5

-10

-30

-so

l.,(mA}, COLLECTOR CURRENT

c8

'"'"

SAMSUNG SEMICONDUcroR

-100

-1

'-3

-5

-10

-30 -50

-100

-300

Vcs(V), COLLECTOR-BASE VOLTAGE

676

SS9016

NPN EPITAXIAL SILICON TRANSISTOR

AM CONVERTER, FM/RF AMPLIFIER OF
LOW NOISE.'

TO-92

• High total,power dissipation, (PT=400mW)
"

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic

Symbol

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature

Vceo
VCEo
VEBO
Ic
Pc
Tj
Tstg

Rating

Unit

30
20
4
25
400
150
-55"'150

V
V
V
mA
mW
°C
°C

1 Emitter 2 Base 3. Collector

ELECTRICAL CHARACTERISTICS (Ta= 25 0 C)
Ch~racteristic

Symbol

Test Conditions

Min

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance

BVcBO
BVcEo
BVEBo
ICBO
lEBO
hFE
Vcdsat)
VBE (on)
COb

30
20
4

Current Gain-Bandwidth Product
Noise Figure

fr

Ic= 1OOIlA, IE=O
Ic= 1mA, IB=O
IE=lOOIlA. Ic=O
VcB =30V, IE=O
VEB =3V, Ic=O
VcE =5V,lc =lmA
Ic=10mA,le=lmA
VCE=5V,lc=lmA
Vce= 1 OV, IE=O
f=lMHz
VcE=5V, Ic=lmA :
VcE=5V, Ic= 1.0mA
f=100MHz, Rs=50!l

-

hFE

NF

28

400

Typ

90
0.1
0.72
1.2
620
3.0

Max

100
100
198
0.3

Unit
V
V
V
nA
nA

1.6

V
V
pF

5.0

MHz
dB

CLASSIFICATION

Classification

D

E

F

G

H

I

hFE

28-45

39-60

54-80

72-108

97-146

132-198

c8

SAMSUNG SEMICONDUCTOR

677

·SS9016

NPN EPITAXIAL SILICONTAANSISTOR
BASE-EMIT,TER ON VOLTAGE

STATIC CHARACTERISTic
20

Of=: 1= vel

~"00~

16

IB=90,IIA

.ffi

14

§,,

J

1)110"1·

18

5

1;-80j.-

I

I

I

I

JB=70~A-

12

Ia-60"A-

1

I

'0

1

le=50,IIA

1

1,-40~

I

I,

5

~O"A

,

3

Ie 20JAA

'1
IBj10,uA
1

0
6

8

10

12

14

16

20

18

04

02

VcelVI. COLLECTOR-EMITTER VOLTAGE

06

08

10

12

V,,(VI. BASE-EMITTER VOLTAGE

DC CURRENT GAIN

CURRENT GAIN-BANDWIDTH PRODUCT

1000

1000 0
t--

500

~500 0

Vce=5V

..

~300 0

300

f--- V",

5V

~i 1000

~
~
§ 100
"g
i

;

500

~ 300
,,"

50

"

30

~a:
"'if

100

~

30

::>

l:

5a

a

10

10

10

05

30

50

lelmAI. COLLECTOR CURRENT

lc(mAI. COLLECTOR CURRENT

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITIER SATURATION VOLTAGE

COLLECTOR OUTPUT CAPACITANCE

0

3

1

II

7

5 - Ic :1018

Vce(salJ

3

5
1

/'

100

-

f-lIMH~

""

['-..

I

iE=O

r-....

.......

Vae(sat)

1

.9

7

00 1
01

.5

03

0.5

3

10

lelmAl.- COLLECTOR CURRENT

c8

SAMSUNG SEMICONDUCTOR

30

10

30

50

100

VCO 100

()

I

II'

1,=30"q._

i

I

~

50

30

1,=20_A_

Ie=+-

o

o

9

1~

10

0.6

10

2000

vJJJ

i

w·

~.

g

IE 1000

z

S

~.

I~
~

30

10

BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE

CURRENT GAIN-BANDWIDTH PRODUCT

~

3

IdOlA). COLLECTOR CURRENT

VcE\Y). COLLECTOR-EMITTER VOLTAGE

~

i
.i

61--

Ic=101B

3
V,,(sat)

1

o. 6
0.3


~ 0.06

1 003
100
0.1

10

0.3 0.5

30

0.0 1
0.1

0.3 0.5
IdmA~

IdOlA). COLLECTOR CURRENT

10

30

COLLECTOR CURRENT

OUTPUT CAPACITANCE
2.4

fL1M~Z

1--- 1.=0

!

-

1-

r-

8

o. 4
0
3

10

30

60

100

Vco(V). COLLECTOR-BASE VOLTAGE

.c8

SAMSUNG SEMICONDUCTOR

680

PACKAGE DIMENSIONS

'Unit: mm

SOT-23

Unit: mm

TO-92
4.33
4.83

--+--+--+---2.54 TYP
1.02 TYP

Unit: mm

TO-92S

0.97

II·

~
0.41
0.71

Unit: mm·

TO-92L
5.59
6.10

NC')

010

C'iC'i

'f--'
<00

'3,61
TYP_ ~
1.40

2

18.03
19.03

o
4.01
4.21.
2.08
2,33

):=======~3
9.82
10.58

-II-I_---,:0.;..,:.5:-=,5
0.75

g:~~

I!f-L I

-il

0.45
0.55

2.54 TYP...:!I-_+._.;,5;"::'0i<8
I
TYP

c)l~

c8

SAMSUNG SEMICONDUCTOR

684

PACKAGE DIMENSIONS

TO-3P(F)

Unit: mm

15.7
,3.2 16 .3
;3.6
/

1'-C'l

5. 3
5.9

~u

~ai

r-;oo
OOC\l

ai~

g.........,
J2.3
~
3.1

U"1'

1- .,IL'

_

1 0.6--l
11.2

~C\l

~~

000

00>

'V 'V

-:

~ai~

--11

0.4
0.8

0,':

/-

COLO

2.4 C'l
3,2
3.8

C'l

OOC\l

c?.r

,1

5.25
5.65

..

":<':!

~~

(P

'/1

..

1'-C'l

0

0

2.8
3.4

.rLti

3
1.3
~

Unit: mm

EMBOSSED CARRIER Specification for SOT-23

1.5±0.1

RO.3MAX

B·B

c8

SAMSUNG SEMICONDUCTOR

685

PACKAGE DIMENSIONS

Unit: mm

CARRIER TAPE REELS

0

N

+1

0
-

C!

('II

+1

0
'-

2±0.5

-+-I-8±1.0

Unit: mm

TO-92 TAPING SPECIFICATION
6h

P
Po
P,
P,
W'
Wo
W,
W,
H
H,
Ho
F
F,-F,
Do
t

M
d

°d

c8

SAMSUNG

SEMIC~NDUCTOR

'----Do

T

L,

12.7±0.5
12.7±0.2
3.85±0.5
6.35±0.5
18~~.~

6±0.5
9±0.5
Max. 0.5
Max. 21
Max. 27
16±0.5
5""
-<>,
±0.3
4±0.2
0.65±0.2
C±l .
0.46
3.56
Min. 2.5

686

PACKAGE DIMENSIONS

Unit: mm

T0-92 AMMO PACK
FEED

/FLATSIDE

~=~~~~~~~~~~b_ADHESIVE TAPE
:;~~~~~~~~~:::~CARRIER STRIP

~------330±5--------~

•

FLAT SIDE OF TRANSISTOR and ADHE$IVE TAPE VISIBLE
SAMSUNG's AMMO PACK is equivalent to styles A,B,C,D of reel pack depending on which
box-flat is opened and which end of the box the deviCfes sre fed from.
1 AMMO PACK contsins 2000 pcs Transistors.
.

c8

SAMSUNG SEMICONDUcrOR

687

NOTES

•

•

e·

SAMSUNG SEMICONDUCTOR DISTRIBUTORS
ALABAMA
(205) 830-4764

PETERSON,C.M.
220 Adelaide Street North
London,Ontario,Canada
N6B 3H4

(519) 434-3204

ADDED VALUE
1582 Parkway Loop
UnitG
Tustin, CA 92680

(714) 259-8258

PRELCO
480 Port Royal St. West
Montreal,Quebec,Canada
H3L 289

(514) 389-8051

ADDED VALUE
8361 Dlck9(S Street
Suite 308
San Diego, CA 92111

(619) 278-1990

WESTBURNE IND.ENT.,LTD.
300 Steeprock Drive
Downsview ,Ontario,Canada
M3J 2W9

ALL AMERICAN
369 Van Ness Way #701
Torrance, CA 90501

(800) 262-1717

(714) 963-0667

ADDED VALUE
4090 Young/ield
Wheatridge,CO 80033

(303) 422-1701

BELL MICRO
18350 Ml Langley
Fountain Valley, CA 92708

(408) 434-1150

CYPRESSJRPS
12441 West 49th Avenue
Wheat Ridge,CO 80033

(303) 431-2622

BELL MICRO
550 Sycamore Drive
Milpitas, CA 95035
CYPRESSIRPS
6230 Descanso Avenue
Buena Park,CA 90620

(714) 521-5230

CYPRESS/RPS
10054 Mesa Ridge Ct
Sulte118
San Dlego,CA 92121

(619) 535-0011

CYPRESSIRPS
2175 Martin Avenue
Santa Clara, Ca 95050

(408) 989-2500

JACOIDISTEL
2880 ZANKER ROAD
SUITE 202
SAN JOSE, CA 95134

(408) 432-9290

JACOIDISTEL
2260 Townsgate Road
WesUake Village, CA 91361

(805) 495-9998

PACESETTER
5417 E. L8 Palma
Anahelm,CA 92807

(714) 779-5855

PACESETTER
543 Weddel Drive
Sunnyvale,CA 94089

(408) 734-5470

HAMMOND
4411-B Evangl!l Circle, N.w.
Huntsville, AL 35816

CAUFORNIA

COLORADO

CONNECTICUT
JACO
384 Pratt Street
Meriden, CT 06450

(203) 235-1422

JV
690 Main Street
East Haven,CT 06512

(203) 469-2321

PILGRIM
60 Beaverbrook Road
Danbury,CT 06810

(203) 792-7274

FLORIDA

CANADA
ELECTRONIC WHOLESALERS .
(514) 769-8861
1935 Avenue De L'Eglise
Montreal,Quebec,Canada
H4E lH2

c8

(416) 635-2950

SAMSUNG SEMICONDUCTOR

ALL AMERICAN
16251 N.W. 54th Avenue
Mlami,FL 33014

(305) 621-8282

HAMMOND
6600 N.w. 21st. Avenue
Fort Lauderdale,FL 33309

(305) 973-7103

HAMMOND
1230 W. Central Blvd
OrIando,FL 32802

(305) 849-6060

GEORGIA
HAMMOND
5680 Oakbrook Parkway
#160
Norcross, GA 30093

(404) 449-1996

691

•

SAMSUNG SEMICONDUCTOR DISTRIBUTORS
(Continued) .
ILLINOIS

MINNESOTA

GBUGOOLD
610 Bonnie Lane
Elk Grove Vlllage,lL 60007

(312) 593-3220

ALL AMERICAN
8053 E. Bloomington Fwy
Suitel02
Minneapolis,MN 55421

(612) 884-2220

OHM
746 Vermont Avenue,
Palatine,lL 60067

(312) 359-5500

VOYAGER
5201 East River Road
Fridley,MN 55421

(612)571-7766

QPS
101 Commerce Dr: fA
Schaumburg,lL 60173

(312)884-6620

GRS ELECTRONICS
600 Penn SI. @ Bridge Plaza
Camden, NJ 08102

(609) 964-8560

(317) 848-1323

JACO
Ottilio Office Complex
555 Preakness Avenue
Totowa, NJ 07512

(201) 942-4000

ALL AMERICAN
1136 Tait Street
RockvUle,MD 20853 .

(301) 251-1205

VANTAGE
23 Sebago Street
Clifton,NJ 07013

(201) n7-4100

JACO
Rivers Center
10270 Old Columbia Road
Columbia, MD 21046

(301)995-6620

VANTAGE
6925 Oakland Mills Road
Columbia,MD 21045

(301) 995-0444

INDIANA
ALTEX
12744 N. Meridian
Carmel,lN 46032

MARYLAND

NEW YORK
ALL AMERICAN
33 Commack Loop
Ronkonkoma,NY 11779

(516) 981-3935

CAMlRPC
(716) 427-9999
2975 Brighton Henrietta TL Road
Rochester,NY 14623

MASSACHUSETS
AVED
200 Andover Business Park Dr.
Andover,MA 01810

(617) 688-3800

JACO
145 Oser Avenue
Hauppauge,NY 11788

(516)-273-5500

GERBER
128 Camegle Row
Norwood, MA 02062

(617) 329-2400

JANESWAY
404 Nor1h Terrace Avenue
Mount Vernon,NY 10552

(914) 699-6710

JACO
222 Andover Street
Wilmington,MA 01887

(617) 933-7760

JANESWAY
85 Bethpage Road
HlcksvUle, NY 11801

(516) 935-1827

MAYER,A.W.
34 Unnel Circle
Blllerica,MA 01821

(617) 229-2255

MICRO GENESIS
215 Marcus Blvd.
Hauppauge, NY 11788

(516) 273-2600

SELECT SALES
427 Tumpike Street
Canton, MA 02021

(617) 821-4no

VANTAGE
356 Veterans Memorial Hwy.
Commack,NY 11725

(516) 543-2000

MICHIGAN

"'qs

NEW JERSEY

NORTH CAROLINA

CALDER
4245 Brockton Drive
Grand Raplds,MI 49508

(616)698-7400

DIXIE
2220 South Tryon Street
Charlotte,NC 28234

(704) 377-5413

RS ELECTRONICS
34443 Schoolcraft
Uvonia,MI 48150

(313) 525-1155

HAMMOND
2923 Pacific Avenue
Greensboro,NC 27420

(919) 275-6391

SAMSUNG SEMICONDUCTOR

692

SAMSUNG SEMICONDUCTOR DISTRIBUTORS
(Continued)
TEXAS

NORTH CAROLINA (Continued)
RESCOIRALEIGH
Hwy. 70 West & Resco Court
Raieigh,NC 27612

(919) 781-5700

OHIO
CAM/RPC
749 Miner Road
Cleveland,OH 44143

(216) 461-4700

SCHUSTER
11320 Grooms Road
Cincinatti,OH 45242

(513) 489-1400

SCHUSTER
20570 East Aurora Road
Twinsburg,OH 44087

(216) 425-8134

OREGON
CYPRESSIRPS
15075 S. KoII Parkway
SuitsD
Beaverton,OR 97008

(503) 641-2233

(503) 232-3404

(412) 782-3770

. SOUTH CAROUNA

c8

JACO
1209 Glenville Drive
Richardson, TX 75080

(214) 235-9575

JANESWAY
1701 N. Greenville Avenue #906
Richardson, TX 75081

(214) 437-5125

OMNIPRO
4141 Billy Mitchell
Dallas, TX 75244

(214) 233-0500

UTAH
ADDED VALUE
1836 Parkway Blvd.
West Valley City,UT 84119

(801) 975-9500

STANDARD SUPPLY
3424 South Main Street
Salt Lake CIty,UT 84115

(801) 486-3371

VIRGINIA ELEC.
715 Henry Avenue
Charlotlsvllle,NC 22901

(804) 296-4184

WASHINGTON

PENNSYLVANIA
CAM/RPe
620 Alpha Drive
Plttsburgh,PA 15238

(214) 869-1435 "

VIRGINIA

OREGON (Continued)
RADAR
704 S.E. Washington
Portland,OR 97214

CYPRESSIRPS
2156 W. Northwest Highway
Dallas, TX 75220

DIXIE·
4909 Pelham Road
Greenvllle,SO 29606

(803) 297-1435

DIXIE
1900 Barnwell Street
.Columbla,SO 29201

(803) 779-5332

HAMMOND
1035 Lowndes Hill Rd.
Greenvllle,SO 29607.

(803) 233-4121

CYPRESSIRPS
22125 17th Avenue
Suitsl14
BothsH,WA 98021

(206) 483-1144

PRIEBE
14807 N.E. 40th
Redmond,WA 98052

(206) 881-2363

RADAR
292 Torbett #E
Richland, WA 99352

(509) 943-8336

RADAR
168 Westsm Avenue West
Seattle,WA 98119

(206) 282-251·1

WISCONSIN

SAMSUNG SEMICONDUCTOR

MARSH
1563 S. 101&t. Street
Milwaukee,WI53214

(414) 475-6000

693

•

SAMSUNG SEMICONDUCTOR SALES OFFICES'.. ·U.S.A.

~

CALIFORNIA

ILLINOIS

22837 Ventura Blvd.
Suite 305
Woodland Hills, CA 91367
(818) 346-6416

901 Warrenville Road
Suite 120
Usle,ll60532-1359
(312) 852-2011

2700 Augustine Drive
Suite 198
Santa Clara, CA 9505~
(408) 727-7433

MA~SACHUSETTS
20 Burlington Mall Road
"Suite~05
Burlington, MA 01803
(617) 273-4888

NORTH CAROLINA

TEXAS

3200 Northline'Avenue
Suite 501G, Forum VI
Greensboro, NC 27408
(919) 294-5141

15851 Dallas parkway
Suite 745
Dallas, TX 75248-3307
(214) 239-0754

,SAMSUNG SEMICONDUCTOR REPRESENTATIVES
U.S.A. and CANADA
ALABAMA
EMA
1200 Jordan Lane
Suite 4
Jordan Center
Huntsville,AL 35805

TEL: (205)536-3044
FAX: (205)533-5097

TEL: (604) 433-01!i9
FAX: (604) 430-0144

COLORADO

ARIZONA
HAAS & ASSOC. INC.
77441 East Bulherus Drive
Suite 300
Scottsdale,AZ 85251

TERRIER ELEC.
3700 Gilmore Way. l06A
Bum.aby, B.C" Canada
VSG 4Ml

TEL: (602) 998-7195
FAX: (602) 998-7869

CANDAL INC. _
7500 West Mississippi Ave.
Suite A-2
Lakewood, CO 80226

TEL: (303) 935-7128
FAX: (303) 935-7310

CONNECTlCUT

CALIFORNIA

PHOENIX SALES
257 MaIn Street
Torrington,CT 08790

QUEST REP INC.
9444 Farnham Sl
Suite 107
San Die90,CA 92123

TEL: (619) 565-8797
FAX: (619) 565-8990

SYNPAC
3945 Freedom Circle
Suite 650
Santa Clara,CA 95054

TEL: (408) 988-8988
FAX: (408) 988-5041

WESTAR REP COMPANY
1801 Parkcourt Plaoe
Suite 1030
.
santa Ana,CA 92701

TEL: (714) 835-4711112113
FAX: (714) 835-3043

MEC
375 S. North Lake Blvd.
Suite 1030
Altamonte Sprln9s, FL 32701

WESTAR REP COMPANY
25202 Crenshaw Blvd.
Suite 217
Torrsnoe, CA 90505

TEL: (213) 539-2156
FAX: (213) 539-2584 '

MEC
830 North Adantic Blvd.
Suite 8401
Cocoa Beach, FL 32931

TEL: (203) 496-7709
FAX: (203) 496-0912

FLORIDA
MEC

600 W.

HiDsbllro Blvd.
Suite 300
Deerfield Beach,FL 33441

TEL: (305) 426-8944
FAX: (305) 426-8799

TEL: (407) 332-7158
' FAX: (407) 830-5436

TEL: (407) 799-0820
F:AX: (407) 7990923

GEORGIA
EMA

CANADA
TERRIER ELEC.
. 145 The West MaN
Etoblcoke, OntarIo, Canada
M9C lC2

ciS

8695 Peachtree Ind. BIvd._
TEL: (416) 622-7558
FAX: (416) 626-1035

SAMSUNG SEMICONDUCTOR

, TEL: (404) 448-1215
FAX: (404) 446-9363

Suite 101
Adanta, GA 30360

694

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
U.S.A. and CANADA (Continued)
ILUNOIS
IRI
8lI3O Gross PoInt Road
SkokJe,IL 60076

TEL: (312) 967-8430
FAX: (312) 967-5903

INDIANA
STB & ASSOC.'NC.
3003 E. 961h St
Sultel02
Indianapolls,IN 46240

TEL: (317) 844-9227
FAX: (317) 844-1904

TEL: (301) 789-9360
FAX: (301) 789-9364

n

TEL: (617) 863-8898
FAX: (617) 863-0462

TEL: (313) 643-0506
FAX: (313) 643-4735

TEL: (612) 854-1120
(612) 654-8312

TEL: (201) 461·2789
FAX: (201) 461-3857

NEW YORK
T-SaUARE

TEL: (315) 463-8592

6443 Ridings Road

",AX: (315) 463·0355

Syracuse, NY 13206

T-SaUARE

TEL: (716) 924-9101

7353 Victor-Pittsford Road
Victor, NY 14564

FAX: (716) 924-4946

GODWIN & ASSoc.
1100 Logger CI.
Suite B 102
RaleIgh, NC 27809

TEL: (919) 878-8000
FAX: (1119) 878-3923

GODWIN & ASSOCIATES
2812 oak leigh Drive
Charlotte, NC 28213

TEL: (704)549-8500
FAX: (704) 549-9192

TEL: (215) 631-1414
FAX: (215) 631-1640

DlGIT·TECH
P.O. BOX 1945
CALLE CRUZ #2
BAJOS, SAN GERMAN

TEL: (809) 892-4260
FAX: (809) 892-3366

EMA
210 W. Stone A\I8I1Ue
Greenville, SC 29609

TEL: (803) 233-4637
FAX: (803) 242-3089

S.W. SALES INC.
2267 Trewood, Bldg. E3
EI Paeo, TX 79935
VlELOCK ASSOC.
720 E. Pari< BlIId.
SultelO2
Plano,TX 75074
VIELOCK ASSOC.
9600 Great Hills Trail
Sultel50-W
Austin,TX 78759

TEL: (915) 594-8259
FAX: (915) 592'()288
TEL: (214) 881-1940
FAX: (214) 423·8556

TEL: (512) 345-8498
FAX: (512) 346-4037

ANDERSON & ASSoc.
270 South MaIn, #108
Bountiful, UT 84010

TEL: (801) 292-8991
FAX: (801) 298-1503

WASHINGTON
EARL & BROWN CO.
2447-A 152nd Ave. N.E.
Redmond,WA 98052

TEL: (206) 885-5064
FAX: (206) 885-2262

WISCONSIN

OHIO

c8

RIYCO JANUARY INC.
RJI Building
78 Soulh Troopec Road
Norristown,PA 19403

UTAH

NORTH CAROLINA

BAILEY, J.N. & ASsoc.
129 W. Main Street
New Lebsnon,OH 45345

TEL: (503) 643-5500
FAX: (503) 644-9230

TEXAS

NEW JERSEY
NECCO
2460 Lemoine Avenue
Ft. Lee,NJ 07024

EARL & BROWN CO.
9735 S.W. Sunshine Ct.
SulteSOO
Beaverton,OR 97005

SOUTH CAROUNA

MINNESOTA
IRI
1120 East 80Ih Street
Bloomington, MN 55420 FAX:

TEL: (216) 273-3798
FAX: (216) 225-1461

PUERTO RICO

MICHIGAN
JENSENC.8.
2145 Crooks Rd.
Troy,MI48084

BAILEY, J.N•• ASsoc.
1687 Devonshire Drive
Brunswlck,Of-! 44212

PENNSYLVANIA

MASSACHUSETTS
JODAN TECHNOLOGY
1 BedIord St
lexington, MA 02173

TEL: (614) 262·7274
FAX: (614) 262'()384

OREGON

MARYLAIID
ADVANCED TECH SALES
809 Hammonds Feny Rd.
Suite D
Unthloum,MD 21090

BAILEY, J.N•• ASSOC.
2679 Indianola Avenue
Columbus,OH 43202

TEL: (513) 687-1325
FAX: (513) 687-2930

SAMSUNG SEMICONDUcrOR

i

IRI
631 Mayfair
Milwaukee, WI 53226

TEL: (414) 259-0965

695

•

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
EUROPE
AUSTRIA
ABRAHAMCZIK + DEMEL
GesmbH & Co. KG
Elchenslrabe 58-6411
A-ll20 Vienna

NETf(ERLANDS
Tel:(0222) 857661
Tlx: 0134273
Fax: 833563

NEWTECINTERNAT~L

Tel:(02) 7250900
Tlx: 25820
Fax:(02) 7250813

FINLAND
INSTRUMENTARIUM
ELEKTRONIIKKA
P.O. Box 64,VIUkka
SF'()2631 Espoo
Helsinki Finland

Tel:(358)0528432O
Tlx: 124426
Fax:(358)0524986

SEMICONDUCTORES 8.A.
Ronda General MiInt. 240
Ban:elona-6

Tel: (93) 2172340
Tlx: 97787 SMCO E
Fax: 2175698

SANTOS DEL VALLE, SA
GaDleo. 54. 56
28015 Madrtd

Tel:(91)4468141/44
Tlx: 42615 LUSA E.

SWEDEN
NORDISK ELEKTRONIK AB
Huwdstagatan 1 Box 1409
5-17127 Solna

Tel:(08)7349770
Tlx: 10547
Fax:(08) 272204

SWITZERLAND

FRANCE
ASIAMOS
BaUment EVOUC 1
155 Boulevard de Valmy
92705 Colombas, Franc:e

Tel:(010) 373777
'Tlx: 21598

SPAIN

BELGIUM
Chaussee de lowaln 186
1940 WoIuwe-St-Elieme
Leuvensestaenwet 185
194Q-Sln1-8Ievens-WoIuwe

BV HANDELMIJ"MALCHUS
Fokkerslrett 511-513
Poslibus 48
NL-3100 AA Schledam

Tel: (1) 47601255
Tlx: 613690F
Fax:(1)47601562

PANATELAG
Hardslrebe 72
CH-5430 We\tlngen Zuri~

,Tel:(058)275275
Tlx: 58068
Fax: (056) 271924

UNITED KINGDOM
GERMANY (WEST)
SILCOM ELEKTRONICS
Neusser Sir. 336-338
0-4050 Muchengladbach

Tel: (02161) 60752
Tlx: 852189

MICRONETICS VERTRIEB8Tel: (07159) 6019
GESELLSCHAFT
Tlx: 724708
ELEKTRONISCHER
BAUElEMENTS and SYSTEME GmbH
Weil dar S1adIer SIrabe 45
7253 Rennlngen 1
ING. THEO HENSKES GmbH
LaalZener Sir. 19
Postfach 721226
30000 Hannowr 72

Tel:(0511) 865075
Tlx: 923509
Fax: 876004

ASTRONIC GmbH
Wlnzerer SIr. 47d
8000 Munchen 40

TeI:(089) 309031
Tlx: 521687
Fax:(089)3006001

KORD DISTRIBUTION LTD.
Watchmoor Road. cafflbet1ey
Surrey GU153AO

Tel: 0276 685741
Tlx: 859919
KOROISG.

BYTECH LTD.
2 The Western Centre
Westem Road
Bracknell Berkshire RG121RW

Tel: 0344 482211
Tlx: 648215

RAPID SILICON

Tel: 0494 26271
Sales hot line: 0494 442266
Tlx: 837931
Fax: 0494 21880
Bucki1ghamshlre HP 11 2 ER
' '

Rapid House Denmark Street
High Wycombe

ITALY
MOXEL 8.P..A.
20092 Clnleelo BaJsamo (M)
VIa C. Frova. 34
'

Tel:(02) 61290521
Tlx: 35a045
Fu: (02) 6172582

DIS. EL 8.R.L
10148 Torino
VIa Ala d Slura 71/18

Tel: (220) 1522345
Tlx: 215118

c8

SAMSUNG SEMICONDUCTOR

696

SAMSUNG SEMICONDUCTOR REPRESENTATIVES '
ASIA
HONG KONG

JAPAN

AV. CONCEPT

ADO ELECTRONIC INDUSTRIAL CO., LTD.

Hunghom Commercial Centre,
Room 708, Tower A 7/F
37·39, Ma Tau Wai Road
Hunghom, Kowloon, Hong Kong
Tel: 3·629325"'6, 3·347722"'3
Tlx: 52362 ADVCC HX
Fax: 852·3·7234718

7th FL" SASAGE BLDG. 4·6 SOTOKANDA
2·CHOME CHIYODA·KU, TOKYO 101, JAPAN
Tel: 03·257·1618
Fax: 03·257·1579

PROTECH COMPONENT
FLAT 3 10/F WING SHING IND. BLDG.
26 NG FONG ST, SANPOKONG
KOWLOON, Hong Kong
Tel: 3·255106
Tlx: 38396 PTLD HX
Fax: 852·3·7988459

TRIATOMIC ENTERPRISES
Room 2001 A Nan Fung Center
264·298, Castle Peak Road
Tusen Wan, New Territories.
Tel: 0·4121332
Fax: 0·4120199

MATSUDA ELECTRONICS
'6/F CHUNG PAK Commercial BLDG.
2 Coo Yuen SI. Yau .Tong Bay
Kowloon, Hong Kong
Tel: 3·7276383
Tlx: 42349 MAZDA HX
Fax: 852·3·7989661

JERS ELECTRONICS COMPANY
14/F, Houtex Industrial BLDG.
16 Hung To Road, Kwan Tong Kowloon
Hong Kong
Tel: 3·418311·8
Tlx: 55450 JERSE HX
Fax: 852·3·438712

TAIWAN
YOSUN INDUSTRIAL CORP.
MIN SHENG Commercial BLDG.
10F., Noe 481, MIN·SHENG EAST RD.,
TAIPEI;TAIWAN, R.O.C.
.
Tel: 501·0700 (10 UNES)
Tlx: 26777 YOSUNIND
Fax: (02) 503·1278

KENTOP ELECTRONJCS CO., LTD.
5F·3, 21st CENTURY BLDG.,
NO. 207, TUN·HWA N. RD" TAIPEI
Tel: (02) 716·1754, '716·1757
Fax. (02).717·3014

c8

SAMSUNG SEMICONDUCTOR

INTERCOM PO INC . .
IHI BLDG, 1·6·7, SHIBUYA, SHIBUYA·KU
TOKYO 150 JAPAN
Tel: 03·406·5612
Fax: 04·409·4634

CHEMI-CON INTERNATIONAL CORP.
MITSUYA TORANOMON BLDG.
22·14, TORANOMON 1 CHOilAE
MINATO"KU TOKYO 105, JAPAN
Tel: 03·508-2841
Fax: 03·504·0566

TOMEN ELECTRONICS CORP.
1·1, USCHISAIWAI·CHO 2 CHOME
CHIYODA·KU TOKYO, 100
Tel: 03·506·3473
Fax: 03·506·3497

•

DIA SEMICON SYSTEMS INC.
WACORE 64 1·37·8 SANGENJAYA
SETAGAYA·KU TOKYO 154 JAPAN
Tel: 03·487·0386
Fax: 03·487·8088

RIKEI CORP.
NICHIMEN BLDG. 2·2·2 NAKANOSHIMA
KITA·KU OSAKA 530 JAPAN
Tel: 06·201·2081
Fax: 06·222·1185

SINGAPORE
GEMINI ELECTRONICS PTE LTD.
100, UPF·R CROSS STREET
#09·08 OG BLDG. SINGAPORE 0105
Tel: 65·5351777
Tlx: RS 4281 9
Fax: 65·5350348

INDIA
MURUGAPPA ELECTRONICS LTD.
PARRRY HOUSE 3rd floor 43 Moore. Street
MADRAS 600 001 India
Tel: 21019/31003
Tlx: 041·8797 HIL IN.

697

SAMSUNG SEMICONDUCTOR REPRESENTATIVES
KOREA
NAEWAE ELECTalC co., LTD.
Room 403, 2200ng Sumln Bldg,
#16·1, Hangangro-2ka, Yongsanku,
Seoul Korea.
.
Tel: 701·7341"'5
Fax: 717;7246

'SAMSUNG
LIGHT-ELECTRONICS CO., LTD.
149.Jang Sa Dong
Jongroku, Seoul Korea
Tel: 744-2110, 2611,-6187/8
Fax: 744-4803

NEW CASTLE
SEMICONDUCTOR CO., LTD.
123-1, Joo Kyo Dong
Joongku, Seoul Korea
Tel: 274-3220, 3458

HANKOOK SEMICONDUCTOR
1131-9' Kurodong, Kuroku,
Seoul Korea
Tel: 868-0277"'9
Fax: 868-4604

SEGYUNG ELECTRONICS
182-2 Jang Sa oOng
Jongroku, Seoul Korea
Tel: 272·6811 "'6
Fax: 273-6597

c8

SAMSUNG SEMICONDUCTOR

698

=8 ~~UNG
HEAD OFFICE:
9/10FL. SAM SUNG MAIN BLDG .
250, 2-KA, TAEPYUNG-RO ,
CHUNG-KU , SEOUL , KOREA
C.P.O. BOX 8233

TELEX : KORSST K27970
TEL : (SEOUL) 751-2114
FAx : 753-0967

BUCHEON PLANT:
82-3 , DODANG-DONG ,
BUCHEON, KYUNGKI-DO, KOREA
C.P.O. BOX 5779 SEOUL 100

TELEX KORSEM K28390
TEL (SEOUL) 741 -0066 , 662-0066
FAX : 741-4273

KIHEUNG PLANT:
SAN #2>1 NONGSUH-RI, KIHEUNG-MYUN
YONGIN-GUN, KYUNGKI-DO , KOREAC,P.O. BOX 37 SUWON

TELEX : KORSST K23813
TEL (SEOUL) 741 ,0620/7
FAX : 741-0628

GUMI BRANCH :
259, GONDAN-DONG, GUM I,
KYUNGSANGBUK~O , KOREA

TELEX : SSTGUMI K54371
TEL : (GUMI) 2-2570
FAX : (GUMI) 52-7942

SAMSUNG SEMICONDUCTOR INC .:
3725 NORTH FIRST STREET
SANJOSE, CA 95134-1708, USA

TEL : (408) 434-5400
TELEX : 339544
FAX : (408) 434-5650

HONG KONG BRANCH :
13FL. BANK OF AMER ICA TOWER
12 HARCOU RT ROAD , HONG KONG

TEL: (5) 21-0307/9 , 21-0300, 23-7764
TE LEX 80303 SSTC HX
FAX : (5) 84-50787

TAIWAN OFFICE:
RM 11 02, I.T. BLDG, NO. 385
TUN-HWA S, RD, TAIPEI , TAIWAN

TEL : (2) 777-1044 /5
FAX : (2) 777-3629

SAMSUNG JAPAN CO.:
RM 3108 , KASUMIGASEKI BLDG.
2-5 , 3-C HOME KASUMIGASEKI
CHIYODA-KU , TOKYO, 100 JAPAN

TEL : (03) 581-1816/7585
TELEX : J24244
FAX (03) 581-7088

SAMSUNG SEMICONDUCTOR EUROPE GMBH :
MERGENTHATER ALLEE 38-40
6236 ESCHBOR,N, WIG.

TEL : 0-6196-90090
FAX: 0-6196-900989
TL X : 4072678 SSED

SAM SUNG (U.K.) LTD.:
6 FL. VICTORIA HOUSE SO\JTHAMPTON
ROW W.C. 1 LONDON . ENGLAND

TELEX : 297987 STARS LG
TEL 831-6951/5
FAX : (01) 430-0096 ,.

PRINTED IN KOREA
JULY, 1988
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