1989_Motorola_Small Signal_Transistors_FETs_and_Diodes_Device_Data 1989 Motorola Small Signal Transistors FETs And Diodes Device Data
User Manual: 1989_Motorola_Small-Signal_Transistors_FETs_and_Diodes_Device_Data
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Selector Guides
Plastic-Encapsulated
Transistors
Metal-Can
Transistors
Field-Effect
Transistors
Small-Signal Tuning,
Switching and
Zener Diodes
Tape and Reel
Specifications
Package Outline
Dimensions and
Application Literature
Reliability and
Quality Assurance
•
•
•
•
'.
•
•
•
®
MOTOROLA
SMALL-SIGNAL TRANSISTORS,
FETs AND DIODES
Prepared by
Technical Information Center
This publication presents technical information for the several product families that comprise the
Motorola small-signal semiconductor line. The families includes bipolar, field-effect transistors, and
diodes. These are available in a variety of packages; metal can, plastic, and surface mount. Complete
device speCifications and typical performance curves are given on individual data sheets, which are
grouped by the various families.
A quick comparison of performance characteristics is presented in the easy-to-use selector guides
in the first section. The tables will assist in the selection of the proper transistor for a specific application.
Separate sections are included to describe package outline drawings, and to clarify the high reliability
processing and testing procedure.
The information in this book has been carefully checked and is believed to be accurate; however,
no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
purchaser of semiconductor devices any license under the patent rights to the manufacturer.
Motorola reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Motorola does not assume any liability arising out of the application or
use of any product or circuit described herein; neither does it convey any license under its patent
rights nor the rights of others. Motorola products are not authorized for use as components in life
support devices or systems intended for surgical implant into the body or intended to support or
sustain life. Buyer agrees to notify Motorola of any such intended end use whereupon Motorola shall
determine availability and suitability of its product or products for the use intended. Motorola and@
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Employment Opportunity/
Affirmative Action Employer.
Printed in U.S.A.
Series 0
©MOTOROLA INC., 1989
Previous Edition ©1987
""All Rights Reserved"
TMOS is a trademark of Motorola Inc.
Teflon is a trademark of E.!. Dupont, DeNeumours and Co., Inc.
ALPHANUMER~INDEX
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
1N5139
1N5139A
1N5140
1N5140A
1N5141
5-2
5-2
5-2
5-2
5-2
1N5456A
1N54568
1N5461A
1N54618
1N5462A
5-5
5-5
5-8
5-8
5-8
2N2223A
2N2270
2N2368
2N2369
2N2369A
3-27
3-36
3-37
3-37
3-37
1N5141A
1N5142
1N5142A
1N5143
1N5143A
5-2
5-2
5-2
5-2
5-2
1N54628
1N5463A
1N54638
1N5464A
1N54648
5-8
5-8
5-8
5-8
5-8
2N2453
2N2453A
2N2480A
2N2481
2N2484
3-42
3-42
3-27
3-44
3-48
1N5144
1N5144A
1N5145
1N5145A
1N5146
5-2
5-2
5-2
5-2
5-2
1N5465A
1N54658
1N5466A
1N54668
1N5467A
5-8
5-8
5-8
5-8
5-8
2N2501
2N2605
2N2639
2N2640
2N2641
3-49
3-52
3-53
3-53
3-53
1N5146A
1N5147
1N5147A
1N5148
1N5148A
5-2
5-2
5-2
5-2
5-2
1N54678
1N5468A
1N54688
1N5469A
1N54698
5-8
5-8
5-8
5-8
5-8
2N2642
2N2643
2N2644
2N2652
2N2652A
3-53
3-53
3-53
3-55
3-55
1N5441A
1N54418
1N5442A
1N54428
1N5443A
5-5
5-5
5-5
5-5
5-5
1N5470A
1N54708
1N5471A
1N54718
1N5472A
5-8
5-8
5-8
5-8
5-8
2N2721
2N2722
2N2723
2N2785
2N2800
3-56
3-57
3-58
3-59
3-60
1N54438
1N5444A
1N54448
1N5445A
1N54458
5-5
5-5
5-5
5-5
5-5
1N54728
1N5473A
1N54738
1N5474A
1N54748
5-8
5-8
5-8
5-8
5-8
2N2843
2N2844
2N2894
2N2895
2N2896
4-2
4-2
3-61
3-62
3-62
1N5446A
1N54468
1N5447A
1N54478
1N5448A
5-5
5-5
5-5
5-5
5-5
1N5475A
1N54758
1N5476A
1N54768
2N1132
5-8
5-8
5-8
5-8
3-23
2N2897
2N2903
2N2904
2N2904A
2N2905
3-62
3-64
3-65
3-65
3-65
1N54488
1N5449A
1N54498
1N5450A
1N54508
5-5
5-5
5-5
5-5
5-5
2N1132A
2N1613
2N1711
2N1893
2N2060
3-23
3-25
3-9
3-26
3-27
2N2905A
2N2906
2N2906A
2N2907
2N2907A
3-65
3-65
3-65
3-65
3-65
1N5451 A
1N54518
1N5452A
1N54528
1N5453A
5-5
5-5
5-5
5-5
5-5
2N2102
2N2218
2N2218A
2N2219
2N2219A
3-30
3-31
3-31
3-31
3-31
2N2913
2N2914
2N2915
2N2916
2N2917
3-71
3-71
3-71
3-71
3-71
1N54538
1N5454A
1N54548
1N5455A
1N54558
5-5
5-5
5-5
5-5
5-5
2N2221
2N2221A
2N2222
2N2222A
2N2223
3-31
3-31
3-31
3-31
3-27
2N2918
2N2919
2N2920
2N2945
2N2945A
3-71
3-71
3-71
3-73
3-74
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
iii
ALPHANUMERIC INDEX (Continued)
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
2N2946
2N2946A
2N3011
2N3012
2N3013
3-73
3-74
3-78
3-79
3-80
2N3497
2N3498
2N3499
2N3500
2N3501
3-122
3-125
3-125
3-125
3-125
2N3906
2N3909
2N3909A
2N3946
2N3947
2-7
4-13
4-13
3-169
3-169
2N3014
2N3019
2N3020
2N3043
2N3044
3-80
3-82
3-82
3-85
3-85
2N3506
2N3507
2N3546
2N3634
2N3635
3-131
3-131
3-133
3-136
3-136
2N3962
2N3963
2N3964
2N3965
2N3970
3-175
3-175
3-175
3-175
4-14
2N3045
2N3048
2N3053
2N3053A
2N3073
3-85
3-85
3-87
3-87
3-88
2N3636
2N3637
2N3648
2N3700
2N3724
3-136
3-136
3-142
3-82
3-144
2N3971
2N3972
2N3993
2N3994
2N4013
4-14
4-14
4-15
4-15
3-177
2N3114
2N3135
2N3227
2N3244
2N3245
3-90
3-91
3-37
3-92
3-92
2N3725
2N3726
2N3727
2N3734
2N3735
3-144
3-148
3-148
3-150
3-150
2N4014
2N4015
2N4016
2N4026
2N4027
3-177
3-181
3-181
3-183
3-183
2N3249
2N3250
2N3250A
2N3251
2N3251A
3-96
3-99
3-99
3-99
3-99
2N3737
2N3743
2N3762
2N3763
2N3764
3-150
3-152
3-156
3-156
3-156
2N4028
2N4Q29
2N4030
2N4031
2N4032
3-183
3-183
3-183
3-183
3-183
2N3252
2N3253
2N3300
2N3302
2N3307
3-104
3-104
3-109
3-109
3-110
2N3765
2N3796
2N3797
2N3798
2N3799
3-156
4-7
4-7
3-162
3-162
2N4033
2N4036
2N4037
2N4091
2N4092
3-183
3-185
3-185
4-16
4-16
2N3308
2N3330
2N3331
2N3425
2N3437
3-110
4-3
4-4
3-112
4-5
2N3806
2N3806A
2N3807
2N3807A
2N3808
3-165
3-165
3-165
3-165
3-165
2N4093
2N4123
2N4124
2N4125
2N4126
4-16
2-12
2-12
2-16
2-16
2N3438
2N3439
2N3440
2N3444
2N3459
4-5
3-113
3-113
3-104
4-6
2N3808A
2N3809
2N3809A
2N3810
2N3810A
3-165
3-165
3-165
3-165
3-165
2N4208
2N4209
2N4220
2N4220A
2N4221
3-187
3-187
4-18
4-18
4-18
2N3460
2N3467
2N3468
2N3485
2N3485A
4-6
3-119
3-119
3-65
3-65
2N3811
2N3811A
2N3821
2N3822
2N3823
3-165
3-165
4-10
4-10
4-12
2N4221A
2N4222
2N4222A
2N4234
2N4235
4-18
4-18
4-18
3-189
3-189
2N3486
2N3486A
2N3494
2N3495
2N3496
3-65
3-65
3-122
3-122
3-122
2N3824
2N3838
2N3903
2N3904
2N3905
4-10
3-168
2-2
2-2
2-7
2N4236
2N4237
2N4238
2N4239
2N4260
3-189
3-194
3-194
3-194
3-198
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
iv
ALPHANUMERIC INDEX (Continued)
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
2N4261
2N4264
2N4265
2N4338
2N4339
3-198
2-20
2-20
4-21
4-21
2N5022
2N5023
2N5058
2N5059
2N5086
3-217
3-217
3-219
3-219
2-36
2N5679
2N5680
2N5681
2N5682
2N5171
3-227
3-227
3-227
3-227
2-61
2N4340
2N4341
2N4351
2N4352
2N4391
4-21
4-21
4-22
4-26
4-30
2N5087
2N5088
2N5089
2N5208
2N5209
2-36
2-41
2-41
2-42
2-47
2N5793
2N5794
2N5795
2N5796
2N5859
3-232
3-232
3-233
3-233
3-234
2N4392
2N4393
2N4400
2N4401
2N4402
4-30
4-30
2-25
2-25
2-30
2N5210
2N5222
2N5223
2N5226
2N5227
2-47
2-48
2-51
2-52
2-53
2N5861
2N6426
2N6427
2N6428
2N6428A
3-237
2-62
2-62
2-66
2-66
2N4403
2N4404
2N4405
2N4406
2N4407
2-30
3-201
3-201
3-206
3-206
2N5230
2N5245
2N5246
2N5247
2N5320
3-220
4-41
4-41
4-41
3-223
2N6430
2N6431
2N6432
2N6433
2N6515
3-240
3-240
3-241
3-241
2-68
2N4409
2N4410
2N4416
2N4416A
2N4453
2-35
2-35
4-32
4-32
3-13
2N5321
2N5322
2N5323
2N5400
2N5401
3-223
3-225
3-225
2-54
2-54
2N6516
2N6517
2N6519
2N6520
2N657
2-68
2-68
2-68
2-68
3-2
2N4854
2N4855
2N4856
2N4856A
2N4857
3-209
3-209
4-39
4-39
4-39
2N5415
2N5416
2N5457
2N5458
2N5459
3-113
3-113
4-43
4-43
4-43
2N6659
2N6660
2N6661
2N6782
2N6784
4-55
4-55
4-55
4-58
4-59
2N4857A
2N4858
2N4858A
2N4859
2N4859A
4-39
4-39
4-39
4-39
4-39
2N5460
2N5461
2N5462
2N5463
2N5464
4-44
4-44
4-44
4-44
4-44
2N6788
2N6790
2N6796
2N6798
2N6800
4-60
4-61
4-62
4-63
4-64
2N4860
2N4860A
2N4861
2N4861A
2N4890
4-39
4-39
4-39
4-39
3-211
2N5465
2N5484
2N5485
2N5486
2N5550
4-44
4-47
4-47
4-47
2-57
2N6802
2N697
2N6987
2N6988
2N6989
4-65
3-3
3-242
3-242
3-245
2N4926
2N4927
2N4928
2N4929
2N4930
3-212
3-212
3-213
3-213
3-213
2N5551
2N5555
2N5581
2N5582
2N5638
2-57
4-49
3-31
3-31
4-51
2N699
2N6990
2N7000
2N7002
2N7008
3-4
3-245
4-66
4-67
4-69
2N4931
2N4937
2N4938
2N4939
2N4941
3-213
3-215
3-215
3-215
3-215
2N5639
2N5640
2N5668
2N5669
2N5670
4-51
4-51
4-53
4-53
4-53
2N706
2N706A
2N7068
2N708
2N718
3-5
3-5
3-5
3-7
3-8
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
v
"-
ALPHANUMERIC INDEX (Continued)
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
2N718A
2N720A
2N835
2N869A
2N910
3-9
3-11
3-12
3-13
3-16
BC174B
BC177
BC177A
BC177B
BCmC
2-74
3-252
3-252
3-252
3-252
BC308B
BC308C
BC309
BC309A
BC309B
2-83
2-83
2-83
2-83
2-83
2N914
2N915
2N916
2N918
2N930
3-17
3-18
3-19
3-20
3-21
BC178
BC178A
BC178B
BC178C
BC179
3-252
3-252
3-252
3-252
3-252
BC309C
BC317
BC317A
BC317B
BC320
2-83
2-86
2-86
2-86
2-88
2N930A
2N956
3N155
3N157
3N169
3-21
3-9
4-71
4-72
4-75
BC179A
BC179B
BC179C
BC182
BC182A
3-252
3-252
3-252
2-76
2-76
BC320A
BC320B
BC327
BC327-16
BC327·25
2-88
2-88
2-90
2-90
2-90
3N170
3N171
BAL99L
BAS16L
BAV99L
4-75
4-75
5-11
5-12
5-13
BC182B
BC183
BC183A
BC183B
BC183C
2-76
2-76
2-76
2-76
2-76
BC327·40
BC328
BC328·16
BC328·25
BC328·40
2-90
2-90
2-90
2-90
2-90
BC107 .
BC107A
BC107B\
BC107C
BC108
3-248
3-248
3-248
3-248
3-248
BC184
BC184B
BC184C
BC212
BC212A
2-76
2-76
2-76
2-78
2-78
BC337
BC337·16
BC337·25
BC337·40
BC338
2-93
2-93
2-93
2-93
2-93
BC108A
BC108B
BC108C
BC109
BC109A
3-248
3-248
3-248
3-248
3-248
BC212B
BC213
BC213A
BC213B
BC213C
2-78
2-78
2-78
2-78
2-78
BC338·16
BC338·25
BC338·40
BC368
BC369
2-93
2-93
2-93
2-96
2-96
BC109B
BC109C
BC140-10
BC140-16
BC141-10
3-248
3-248
3-250
3-250
3-250
BC214
BC214B
BC214C
BC237
BC237A
2-78
2-78
2-78
2-80
2-80
BC372
BC372·16
BC372·25
BC372-40
BC373
2-98
2-98
2-98
2-98
2-98
BC141-16
BC160
BC160-6
BC160-10
BC160-16
3-250
3-251
3-251
3-251
3-251
BC237B
BC237C
BC238
BC238A
BC238B
2-80
2-80
2-80
2-80
2-80
BC373·16
BC373·25
BC393
BC394
BC413
2-98
2-98
3-254
3-254
2-100
BC161
BC161-6
BC161-10
BC161·16
BC171A
3-251
3-251
3-251
3-251
2-74
BC238C
BC239
BC239B
BC239C
BC307
2-80
2-80
2-80
2-80
2-83
BC413B
BC413C
BC414
BC414B
BC414C
2-100
2-100
2-100
2-100
2-100
BC171B
BC172A
BC172B
BC172C
BC174A
2-74
2-74
2-74
2-74
2-74
BC307A
BC307B
BC307C
BC308
BC308A
2-83
2-83
2-83
2-83
2-83
BC415
BC415B
BC415C
BC416
BC416B
2-101
2-101
2-101
2-101
2-101
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
vi
ALPHANUMERIC INDEX (Continued)
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
lata
beet
Pae No.
BC416C
BC445
BC445A
BC446
BC446A
2-101
2-102
2-102
2-103
2-103
BC547C
BC548
BC548A
BC548B
BC548C
2-107
2-107
2-107
2-107
2-107
BC808-40L
BC817-16L
BC817-25L
BC817-40L
BC818-16L
2-27
2-'28
2-'/8
2-1'8
2-18
BC446B
BC447
BC447A
BC447B
BC448
2-103
2-102
2-102
2-102
2-103
BC549
BC549A
BC549B
BC549C
BC550
2-111
2-111
2-111
2-111
2-111
BC818-25L
BC818-40L
BC846AL
BC846BL
BC847AL
2-12
2-121
2-12£
2:;'129
2·129
BC448A
BC448B
BC449
BC449A
BC449B
2-103
2-103
2-102
2-102
2-102
BC550B
BC550C
BC556
BC556A
BC556B
2-111
2-111
2-114
2-114
2-114
BC847BL
BC847CL
BC848AL
BC848BL
BC848CL
2·129
2-129
2-129
1-129
1-129
BC450
BC450A
BC450B
BC485
BC485A
2-103
2-103
2-103
2-104
2-104
BC557
BC557A
BC557B
BC557C
BC558
2-114
2-114
2-114
2-114
2-114
BC849BL
BC849CL
BC850BL
BC850CL
BC856AL
2-130
2-130
L-130
2-130
2·131
BC485B
BC485L
BC486
BC486A
BC486B
2-104
2-104
2-105
2-105
2-105
BC558A
BC558B
BC558C
BC559
BC559B
2-114
2-114
2-114
2-119
2-119
BC856BL
BC857AL
BC857BL
BC857CL
BC858AL
BC486L
BC487
BC487A
BC487B
BC487L
2-105
2-104
2-104
2-104
2-104
BC559C
BC560
BC560B
BC560C
BC617
2-119
2-119
2-119
2-119
2-121
BC858BL
BC858CL
BC859AL
BC859BL
BC859CL
2-131
2-131
2-132
2-132
2-132
BC488
BC488A
BC488B
BC488L
BC489
2-105
2-105
2-105
2-105
2-104
BC618
BC635
BC636
BC637
BC638
2-121
2-122
2-124
2-122
2-124
BC860AL
BC860BL
BC860CL
BCW29L
BCW30L
2-132
2-132
2-132
2-133
2-133
8C489A
BC489B
BC489L
BC490
BC490A
2-104
2-104
2-104
2-105
2-105
BC639
BC640
BC650
BC650C
BC650CS
2-122
2-124
2-126
2-126
2-126
BCW31L
BCW33L
BCW60AL
BCW60BL
BCW60CL
2-134
2-134
2-135
2-135
2-135
BC490B
BC490L
BC517
BC517S
BC546
2-105
2-105
2-106
2-106
2-107
BC650S
BC651
BC651C
BC651CS
BC651S
2-126
2-126
2-126
2-126
2-126
BCW60DL
BCW61AL
BCW61BL
BCW61CL
BCW61DL
2-135
2-137
2-137
2-137
2-137
BC546A
BC546B
BC547
BC547A
BC547B
2-107
2-107
2-107
2-107
2-107
BC807-16L
BC807-25L
BC807-40L
BC808-16L
BC808-25L
2-127
2-127
2-127
2-127
2-127
BCW65AL
BCW66HL
BCW67L
BCW67AL
BCW67BL
2-139
2-140
2-141
2-141
2-141
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
vii
2-131
, 2-131
2-131
2-131
2-131
ALPHAIIUMERIC INDEX (Continued)
;Motorola
Part
, Number
Data
Sheet
Page No.
Motorola
Part
Number
Motorola
Part
Number
. Data
Sheet
Page No.
Data
Sheet
Page No.
BCf67CL
BCl68L
BC'/68FL
BI'N68GL
BMl69L
2-141
2-141
2-141
2-141
2-142
BCY78-IX
BCY78-X
BCY79-VII
BCY79-VIII
BCY79-IX
3-262
3-262
3-262
3-262
3-262
BF256B
BF256C
BF257
BF258
BF259
4-79.
4-79
3-266
3-266
3-266
BW70L
Q;W71L
ItVl72L
5CX18L
2-142
2-143
2-143
2-144
2-144
BCY79-X
BDB01A
BDB01B
BDB01C
BDB01D
3-262
2-154
2-154
2-154
2-154
BF366
BF371
BF373
BF374
BF375
2-169
2-1.10
2-170
2-171
2-171
BCX11L
BCX21L
BCX5&-10
BCX5&-7
BCX5&-8
2-144
2-144
2-145
2-145
2-145
BDB02A
BDB02B
BDB02C
BDB02D
BDC01A
2-156
2-156
2-156
2-156
2-158
BF375C
BF375D
BF391
BF392
BF393
2-171
2-171
2-173
2-173
2-173
BCX58-9
BCX5S-1I
BCX5t-7
BCX59-8
BCX59-9
2-145
2-145
2-145
2-145
2-145
BDC01B
BDC01C
BDC01D
BDC02A
BDC02B
2-158
2-158
2-158
2-159
2-159
BF420
BF421
BF422
BF423
BF491
2-174
2-175
2-174
2-175
2-176
BCX70GL
BCX70HL
BCX70JL
BCX70KL\
BCX71GL .
2-148
2-148
2-148
2-148
2-150
BDC02C
BDC02D
BDC05
BDC06
BDC07
2-159
2-159
2-160
2-161
2-160
BF492
BF493
BF493S
BF844
BF845
2-176
2-176
2-177
.2-178
2-178
BCX71JL
BCX71KL
BCX78-10L
BCX78-7L
BCX78-8L
2-150
2-150
2-1.51.
2-151
2-151
BDC08
BF199
BF224
BF240
BF241
2-161
2-162
2-163
2-164
2-164
BF959
BFR30L
BFR31L
BFR92L
BFR93L
2-180
4-80
4-80
2-182
2-183
BCX78-9L
BCX79-10L
BCX79-7L
BCX79-8L
BCX79-9L
2-151
2-151
2-151
2-151
2-151
BF244
BF244A
BF244.B
BF244C
BF245
4-77
4-77
4-77
4-77
4-77
BFS17L
BFW43
BFX38
BFX40
BFX48
2-184
3-267
3-269
3-269
3-271
BCY58
BCY58-IX
BCY58-VII
BCY58-Vlil
BCY58-X
3-255
3-255
3-255
3-255
3-255
BF245A
BF245B
BF245C
BF246
BF246A
4-77
4-77
4-77
4-78
4-78
BFX85
BFY50
BFY51
BFY52
BS107
3-272
3-274
BCY59
BCY59-IX
BCY59-VII
BCY59-VIII
BCY59-X
3-255
3-255
3-255
3-255
3-255
BF246B
BF246C
BF247
BF247A
BF247B
4-78
4-78
4-78
4-78
4-78
BS107A
B8170
BSR56L
BSR57L
BSR58L
4-81
4-82
4-84
4-84
4-84
BCY70
BCY71
BCY72
BCY78-VI
BCY78-VlI
3-260
3-260
3-260
3-262
3-262
BF247C
BF254
BF254-3
BF254-4
BF256
4-78
2-167
2-167
2-167
4-79
BSS123L
BSS50
BSS51
BSS52
BSS63L
.cxm
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
viii
~-274
3-274
4-81
4-88
. 3-276
3-276
3-276
2:185
ALPHANUMERIC INDEX (Continued)
Motorota
Part
Number
Data
Sheet
Page No.
Motorota
Part
Number
Motorola
Part
Number
Data
Sheet
Page No.
Data
Sheet
Page No.
BSS64L
BSS71
BSS72
BSS73
BSS74
2-186
3-278
3-278
3-278
3-281
BZX84C33L
BZX84C4V7L
BZX84C5V1L
BZX84C5V6L
BZX84C6V2L
5-14
5-14
5-14
5-14
5-14
J111
J112
J113
J174
J175
4-108
4-108
4-108
4-109
4-109
BSS75
BSS76
BSS78
BSS79BL
BSS79CL
3-281
3-281
3-284
2-187
2-187
BZX84C6V8L
BZX84C7V5L
BZXB4C8V2L
BZX84C9V1L
CV1D253
5-14
5-14
5-14
5-14
3-298
J176
J177
J201
J202
J2D3
4-109
4-109
4-110
4-110
4-110
BSS8DBL
BSS8DCL
BSS82BL
BSS82CL
BSS89
2-188
2-188
2-189
2-189
4-86
CV1D44D
CV1D814
CV12253
CV95D7
tRFD11D
3-299
3-300
3-298
3-297
4-90
J270
J300
J3D4
J305
J3DB
4-111
4-112
4-113
4-113
4-114
BSV15-1D
BSV15-16
BSV16-1D
BSV16-16
BSV17-1D
3-286
3-286
3-286
3-286
3-286
tRFD113
IRFD12D
IRFD123
IRFD1ZD
IRFD1Z3
4-90
4-91
4-91
4-89
4-89
J3D9
J310
JF1033B
JF1D33S
JF1033Y
4-114
4-114
4-116
4-116
4-116
BSV17-16
BSV52L
BSW67A
BSW68A
BSX2D
3-286
2-190
3-288
3-288
3-289
IRFD21D
IRFD213
IRFD22D
IRFD223
IRFD911D
4-92
4-92
4-93
4-93
4-94
MAD130
MAD130C
MAD130P
MAD1103C
MAD11D3F
5-16
5-16
5-16
5-16
5-16
BSX29
BSX32
BSX45-6
BSX45-1D
BSX45-16
3-291
3-292
3-293
3-293
3-293
IRFD9113
IRFD9120
IRFD9123
IRFE110
IRFE113
4-94
4-95
4-95
4-96
4-96
MAD11D3P
MAD1107C
MAD1107F
MAD1107P
MAD1108C
5-16
5-16
5-16
5-16
5-16
BSX46-6
BSX46-1D
BSX46-16
BSX47-6
BSX47-1D
3-293
3-293
3-293
3-293
3-293
IRFE9120
IRFE9123
IRFF11D
IRFF113
IRFF12D
4-97
4-97
4-98
4-98
4-99
MAD1108F
MAD1108P
MAD1109
MAD1109C
MAD1109F
5-16
5-16
5-19
5-19
5-19
BSX47-16
BSX59
BSX6D
BZX84C1DL
BZX84C11L
3-293
3-295
3-295
5-14
5-14
IRFF123
IRFF210
IRFF213
IRFF220
IRFF223
4-99
4-100
4-100
4-101
4-101
MAD1109P
MBAV70L
MBAV74L
MBAW56L
MBD101
5-19
5-21
5-22
5-23
5-24
BZX84C12L
BZX84C13L
BZX84C15L
BZX84C16L
BZX84C18L
5-14
5-14
5-14
5-14
5-14
IRFF230
IRFF233
IRFF330
IRFF333
IRFF430
4-102
4-102
4-103
4-103
4-104
MBD201
MBD301
MBD501
MBD701
MD1121
5-26
5-26
5-28
5-28
3-309
BZX84C2DL
BZX84C22L
BZX84C24L
BZX84C27L
BZX84C3DL
5-14
5-14
5-14
5-14
5-14
IRFF433
J1D7
J1D8
J1D9
J110
4-104
4-105
4-105
4-105
4-105
MD1122
MD1132
MD2218
MD2218A
MD2218AF
3-309
3-311
3-312
3-312
3-312
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
ix
--~-
ALPHANUMERIC INDEX (Continued)
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
MD2219A
MD2219AF
MD2369
MD2369A
MD2369AF
3-312
3-312
3-317
3-317
3-317
MD7021F
MD708
MD708A
MD708B
MD8001
3-354
3-301
3-301
3-301
3-356
MHQ2484HXV
MHQ2906
MHQ3467
MHQ3546
MHQ3724
3-361
3-363
3-365
3-366
3-367
MD2369B
MD2369BF
MD2904
MD2904A
MD2904AF
3-317
3-317
3-320
3-320
3-320
MD8002
MD8003
MD918A
MD918AF
MD918B
3-356
3-356
3-302
3-302
3-302
MHQ3724H
MHQ3724HX
MHQ3724HXV
MHQ3725
MHQ3725H
3-367
3-367
3-367
3-367
3-367
MD2905
MD2905A
MD2905AF
MD3250
MD3250A
3-320
3-320
3-320
3-325
3-325
MD982
MD982F
MD984
MD985
MFE120
3-305
3-305
3-306
3-307
4-117
MHQ3725HX
MHQ3725HXV
MHQ3798
MHQ6002
MHQ918
3-367
3-367
3-369
3-370
3-357
MD3250AF
MD3251
MD3251A
MD3251AF
MD3409
3-325
3-325
3-325
3-325
3-329
MFE121
MFE122
MFE130
MFE131
MFE132
4-117
4-117
4-121
4-121
4-121
MM1748A
MM3001
MM3002
MM3003
MM3005
3-371
3-372
3-372
3-372
3-373
MD3410
MD3467
MD3725
MD3725F
MD3762
3-329
3-330
3-334
3-334
3-337
MFE2004
MFE2005
MFE2006
MFE201
MFE2010
4-147
4-147
4-147
4-124
4-149
MM3006
MM3007
MM3009
MM3903
MM3904
3-373
3-373
3,374
3-375
3-375
MD3762F
MD4260
MD4261
MD5000
MD5000A
3-337
3-340
3-340
3-341
3-341
MFE2011
MFE2012
MFE202
MFE203
MFE204
4-149
4-149
4-124
4-124
4-129
MM3905
MM3906
MM4000
MM4001
MM4002
3-377
3-377
3-379
3-379
3-379
MD5000B
MD6001
MD6001F
MD6002
MD6002F
3-341
3-342
3-342
3-342
3-342
MFE209
MFE211
MFE212
MFE823
MFE825
4-131
4-135
4-135
4-140
4-141
MM4003
MM4005
MM4036
MM4037
MM4258
3-379
3-380
3-381
3-381
3-383
MD6003
MD7000
MD7001
MD7001F
MD7002
3-342
3-346
3-347
3-347
3-349
MFE910
MFE9200
MFE930
MFE960
MFE990
4-142
4-151
4-144
4-144
4-144
MM5005.
MM5006
MM5007
MM5262
MM5415
3-386
3-386
3-386
3-387
3-388
MD7002A
MD7002B
MD7003
MD7003A
MD7003B
3-349
3-349
3-350
3-350
3-350
MFQ1000C
MFQ1000P
MFQ5460P
MFQ6660C
MFQ6660P
4-154
4-154
4-155
4-156
4-156
MM5416
MM6427
MMAD1104
MMAD1105
MMAD1106
3-388
3-389
5-30
5-30
5-30
MD7007
MD7007A
MD7007B
MD7007BF
MD7021
3-352
3-352
3-352
3-352
3-354
MHQ2222
MHQ2369
MHQ2484
MHQ2484H
MHQ2484HX
3-358
3-360
3-361
3-361
3-361
MMAD1107
MMAD1108
MMAD1109
MMAD130
MMBA811C5L
5-30
5-32
5-30
5-30
2-191
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
x
ALPHANUMERIC INDEX (Continued)
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
MMBA811C6L
MMBA811C7L
MMBA811C8L
MMBA812M5L
MMBA812M6L
2-191
2-191
2-191
2-192
2-192
MMBR5D31L
MMBR5179L
MMBR536L
MMBR901L
MMBR920L
2-208
2-209
2-198
2-201
2-202
MMBTA70L
MMBTA92L
MMBTA93L
MMBTH1DL
MMBTH24L
2-245
2-246
2-246
2-247
2-248
MMBA812M7L
MMBC1DD9F1L
MMBC1DD9F3L
MMBC1622D6L
MMBC1622D7L
2-192
2-193
2-193
2-194
2-194
MMBR930L
MMBR931L
MMBT2222L
MMBT2222AL
MMBT2369L
2-203
2-204
2-215
2-215
2-217
MMBTH69L
MMBTH81L
MMBV1D5GL
MMBV109L
MMBV2101L
2-249
2-250
5-40
5-42
5-48
MMBC1623L5L
MMBC1623L6L
MMBC1623L7L
MMBC1653N2L
MMBC1653N3L
2-195
2-195
2-195
2-196
2-196
MMBT2484L
MMBT29D7L
MMBT2907AL
MMBT364DL
MMBT39D3L
2-218
2-219
2-219
2-221
2-222
MMBV2102L
MMBV21D3L
MMBV21D4L
MMBV21D5L
MMBV21D6L
5-48
5-48
5-48
5-48
5-48
MMBC1653N4L
MMBC1654N5L
MMBC1654N6L
MMBC1654N7L
MMBD101L
2-196
2-197
2-197
2-197
5-24
MM8T3904L
MMBT39D6L
MM8T4D4L
MMBT404AL
MMBT4123L
2-222
2-224
2-210
2-210
2-226
MMBV21D7L
MMBV21D8L
MMBV21D9L
MMBV31D2L
MMBV34D1L
5-48
5-48
5-48
5-51
5-53
MMBD2D1L
MMBD2835XL
MMBD2836XL
MMBD2837XL
MMBD2838XL
5-26
5-35
5-35
5-36
5-36
MM8T4125L
MMBT4401L
MMBT4403L
MMBT5D86L
MMBT5D87L
2-227
2-228
2-229
2-230
2-230
MMBV37DDL
MMBV409L
MMBV432L
MMBZ5226BL
MMBZ5227BL
5-55
5-44
5-46
5-57
5-57
MMBD3D1L
MMBD352L
MMBD353L
MMBD5D1L
MMBD6D50L
5-26
5-33
5-33
5-28
5-37
MMBT5D88L
MMBT5D89L
MMBT5401L
MMBT555DL
MMBT5551L
2-231
2-231
2-232
2-233
2-233
MMBZ5228BL
MMBZ5229BL
MMBZ523DBL
MMBZ5231BL
MMBZ5232BL
5-57
5-57
5-57
5-57
5-57
MMBD61DDL
MMBD7000L
MMBD701L
MMBD914L
MMBF170L
5-38
5-39
5-28
5-34
4-158
MMBT6427L
MMBT6428L
MMBT6429L
MMBT6517L
MMBT652DL
2-234
2-235
2-235
2-236
2-237
MMBZ5233BL
MMBZ5234BL
MMBZ5235BL
MMBZ5236BL
MMBZ5237BL
5-57
5-57
5-57
5-57
5-57
MMBF4391L
MMBF4392L
MMBF4393L
MMBF4416L
MMBF4860L
4-159
4-159
4-159
4-160
4-161
MMBT8598L
MMBT8599L
MMBT918L
MMBT930L
MMBTAD5L
2-238
2-238
2-212
2-214
2-239
MMBZ5238BL
MMBZ5239BL
MMBZ5240BL
MMBZ5241BL
MMBZ5242BL
5-57
5-57
5-57
5-57
5-57
MMBF5457L
MMBF5459L
MMBF546DL
MMBF5484L
MMBF5486L
4-163
4-164
4-165
4-166
4-167
MMBTA06L
MMBTA13L
MMBTA14L
MMBTA20L
MMBTA42L
2-239
2-240
2-240
2-241
2-242
MMBZ5243BL
MMBZ5244BL
MMBZ5245BL
MMBZ5246BL
MMBZ5247BL
5-57
5-57
5-57
5-57
5-57
MMBFJ31DL
MMBFU31DL
MMBR2D60L
MMBR2857L
MMBR4957L
4-168
4-169
2-205
2-206
2-207
MMBTA43L
MMBTA55L
MMBTA56L
MMBTA63L
MMBTA64L
2-242
2-243
2-243
2-244
2-244
MMBZ5248BL
MMBZ5249BL
MMBZ5250BL
MMBZ5251BL
MMBZ5252BL
5-57
5-57
5-57
5-57
5-57
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
xi
ALPHANUMERIC INDEX (Continued)
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
MMBZ5253BL
MMBZ5254BL
MMBZ5255BL
MMBZ5256BL
MMBZ5257BL
5-57
5-57
5-57
5-57
5-57
MPF960
MPF970
MPF971
MPF990
MPN3404
4-174
4-175
4-175
4-174
5-58
MPS3568
MPS3638
MPS3638A
MPS3640
MPS3646
2-315
2-316
2-316
2-318
2-320
MMPQ2222
MMPQ2222A
MMPQ2369
MMPQ2907
MMPQ2907A
2-251
2-251
2-253
2-254
2-254
MPN3700
MPN3700
MPQ2221
MPQ2222
MPQ2369
2-263
5-55
3-358
3-358
3-360
MPS3702
MPS3703
MPS3704
MPS3705
MPS3866
2-322
2-322
2-323
2-323
2-324
MMPQ3467
MMPQ3725
MMPQ3725A
MMPQ3762
MMPQ3904
2-256
2-257
2-257
2-258
2-259
MPQ2483
MPQ2484
MPQ2906
MPQ2907
MPQ3467
2-265
2-265
3-363
3-363
2-267
MPS3903
MPS3904
MPS3906
MPS3969
MPS4123
2-326
2-326
2-332
2-315
2-334
MMPQ3906
MMPQ6700
MMPQ6842
MPF102
MPF3330
2-260
2-261
2-262
4-171
4-179
MPQ3546
MPQ3725
MPQ3725A
MPQ3762
MPQ3798
3-366
2-268
2-268
2-270
2-272
MPS4124
MPS4125
MPS4126
MPS4249
MPS4250
2-334
2-335
2-335
2-336
2-336
MPF3821
MPF3822
MPF3970
MPF3972
MPF4221
4-180
4-180
4-181
4-181
4-183
MPQ3799
MPQ3904
MPQ3906
MPQ6001
MPQ6002
2-272
2-274
2-275
2-277
2-277
MPS4258
MPS5179
MPS536
MPS650
MPS6507
2-338
2-340
2-293
2-296
2-342
MPF4222A
MPF4223
MPF4224
MPF4391
MPF4392
4-183
4-184
4-184
4-185
4-185
MPQ6100
MPQ6100A
MPQ6426
MPQ6427
MPQ6501
2-280
2-280
2-282
2-282
2-277
MPS651
MPS6520
MPS6521
MPS6523
MPS6530
2-296
2-343
2-343
2-343
2-344
MPF4393
MPF4856
MPF4856A
MPF4857
MPF4857A
4-185
4-189
4-189
4-189
4-189
MPQ6502
MPQ6600
MPQ6600A
MPQ6700
MPQ6842
2-277
2-280
2-280
2-284
2-288
MPS6531
MPS6534
MPS6560
MPS6562
MPS6568A
2-344
2-345
2-346
2-346
2-347
MPF4858
MPF4858A
MPF4859
MPF4859A
MPF4860
4-189
4-189
4-189
4-189
4-189
MPQ7041
MPQ7042
MPQ7043
MPQ7091
MPQ7092
2-291
2-291
2-291
2-292
2-292
MPS6570A
MPS6571
MPS6601
MPS6602
MPS6651
2-347
2-349
2-350
2-350
2-350
MPF4860A
MPF4861
MPF4861A
MPF6659
MPF6660
4-189
4-189
4-189
4-55
4-55
MPQ7093
MPS2222
MPS2222A
MPS2369
MPS2907
2-292
2-303
2-303
2-307
2-309
MPS6652
MPS6714
MPS6715
MPS6716
MPS6717
2-350
2-355
2-355
2-356
2-356
MPF6661
MPF820
MPF89
MPF910
MPF930
4-55
4-172
4-170
4-142
4-174
MPS2907A
MPS3403
MPS3563
MPS3566
MPS3567
2-309
2-313
2-299
2-314
2-315
MPS6724
MPS6725
MPS6726
MPS6727
MPS6733
2-357
2-357
2-358
2-358
2-359
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
xii
ALPHANUMERIC INDEX (Continued)
Motorola
Part
t.Jumber
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
Motorola
Part
Number
Data
Sheet
Page No.
MPS6734
MPS6735
MPS750
MPS751
MPS8093
7-359
,-359
;>-796
2-796
7-360
MPSW01
MPSW01A
MPSW05
MPSW06
MPSW10
2-417
2-417
2-420
2-420
2-423
MV1405H
MV209
MV2l0l
MV2l 02
MV2l 03
5-65
5-42
5-48
5-48
5-48
MPS8097
MPS8099
MPS859B
MPS8599
MPS9l8
7-361
;>-367
MPSW13
MPSW14
MPSW42
MPSW43
MPSW45
2-424
2-424
2-427
2-427
2-430
MV2104
MV2105
MV2l0S
MV2107
MV21 08
5-48
5-48
5-48
5-48
5-48
MPSW51
MPSW51A
MPSW55
MPSW56
MPSW63
2-431
2-431
2-434
2-434
2-437
MV21 09
MV2110
MV2111
MV2112
MV2113
5-48
5-48
5-48
5-48
5-48
MPS929A
MPSA05
MPSA06
MPSA13
MPSA14
2·367
:>367
?;>!l!)
7·301
73GI
? :Hil
?:m
? :l/?
MPSA16
MPSA17
MPSA18
MPSA20
MPSA27
?
?
?
?
?
:1/:1
:1/:1
:l/!l
:1/9
:lBO
MPSW64
MPSW92
MPSW93
MOl120
MOl129
2-437
2-440
2-440
3-309
3-391
MV2114
MV2115
MV4D9
MVAM10B
MVAM109
5-48
5-48
5-44
5-67
5-67
MPSA28
MPSA29
MPSA42
MPSA43
MPSA44
? :lB?
? :lB?
? :lfI4
? :1114
? :mli
M02218
M02218A
M02219
M02219A
M02369
3-312
3-312
3-312
3-312
3-317
MVAMl15
MVAM125
P2N2222
P2N2222A
P2N2907
5-67
5-67
2-447
2-447
2-449
MPSA45
MPSA55
MPSA56
MPSA62
MPSA63
? :I/l!i
? :1(;1
? :!()I
;> :lB!I
? :!I!!I
M02904
M02905A
M03251
M03467
M03725
3-320
3-320
3-325
3-330
3-334
P2N2907A
P2N3019
P2N4033
PBF259
PBF259R
2-449
2-451
2-454
2-443
2-444
MPSA64
MPSA70
MPSA75
MPSA77
MPSA92
? :lll!l
? :l!JO
? :1!11
? :191
? :m:1
M03762
MOSOOl
MOS002
M07001
M07003
3-337
3-342
3-342
3-347
3-350
PBF259RS
PBF259S
PBF493
PBF493R
PBF493RS
2-444
2-443
2-445
2-446
2-446
MPSA93
MPSD55
MPSH04
MPSH07
MPSH10
? :19:1
;> :HJ!)
? 3!J6
;> :ml
7400
M07007
M07021
M0982
MSDS100X
MSDS102
3-352
3-354
3-305
5-60
5-61
PBF493S
U30a
U309
U310
VN061DLL
2-445
4-191
4-191
4-191
4-196
MPSH11
MPSH17
MPSH20
MPSH24
MPSH30
7400
740:1
? 404
7401
;>·410
MSDS150
MV1D4
MV1D5G
MV14D1
MV14D1H
5-62
5-63
5-40
5-65
5-65
VN10lM
VN2222LL
4-195
4-197
MPSH34
MPSH69
MPSHBl
MPSL01
MPSL51
? 411
241;>
(-413
?-41G
;>41G
MV1403
MV1403H
MV14D4
MV1404H
MV1405
5-65
5-65
5-65
5-65
5-65
MOTOROLA SMALL-SIGNAL lHANSISTORS, FETs AND DIODES
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
xiv
Selector Guides
The following selector guides highlight semiconductors
that are the most popular and have a history of high usage
for the most applications.
These selector guides cover a wide range of small signal
plastic and metal can semiconductors.
A large selection of encapsulated plastic transistors, FETs
and diodes are available for surface mount and insertion
assembly technology. Plastic packages include TO-226AA,
TO-226AE 1 Watt and SOT-23. Plastic multiples are available
in 14-pin and 16-pin dual-in-line packages for insertion applications: 50-8, 50-14 and 50-16 for surface mount
applications.
Metal can and ceramic packages are available for applications requiring higher power dissipation or having hermetic requirements. TO-18, TO-205AD, TO-46, TO-52 and
TO-72 packages contain discrete devices. There is a variety
of ceramic dip and flatpacks available for multiple transistors, FETs and diodes.
Devices which are JAN, JANTX, JTXV or CECC qualified
are noted in the individual selector guides or in the Hi-Rei
and Military Section of this selector guide.
Table
Page
1·2
2
3
4
5 ........
6 ........
. 7 ........
. 8 ........
. 9 ........
10. . . .
1-3
1·3
1-4
1-5
1-6
1-6
1-7
1-7
1-7
11 . . . . . . . . 1-8
12. . . . .
1-11
13 . . . . . . . . 1-11
14.
. 15.
16.
17. .
1-12
1-13
1-14
1-14
Table
SURFACE MOUNT
SOT-23 Bipolar Transistors
General·Purpose ...
Switching ..
VHF/UHF Amplifiers, Mixers, Oscillators.
Choppers ..
Darlingtons ..
Low-Noise...
High-Voltage ..
Page
1
,.,5
2
1·16
3
,.,7
4
1·20
5
6
1·20
1-21
1
2
1·24
1·26
1·26
1·26
1-27
1·27
1-27
1-28
1-28
1-28
3
4
5
6
7
Drivers . . . . . .
8
RF Transistors ... .
9
Bipolar Quad Transistors - S0-16. . . . . . 10 ..
SOT-23 Field-Effect Transistors (JFETs)
RF JFETs . . . . . . . . . .
11 ..
General-Purpose JFETs
12.
Chopper/Switches, JFETs
13.
14.
TMOS FETs ..
Zener Diodes.
15.
MULTIPLE DEVICES
Bipolar
Quads . . . . . . . . .
Duals ... .
Surface Mount Multiples
Quad Transistors ....
FETs
TMOS Quads ..... .
Diode Array and Dual Diodes
Diode Arrays . .
Dual Diodes . . . . . . . . . .
Table of Contents
BIPOLAR DEVICES
Plastic-Encapsulated
General-Purpose Transistors.
Low-Noise and Good hFE
Linearily . . . . . . . . . . . . . . . . . .
Darlington Transistors . . . . . . . . . .
High-Current Transistors . . . . . . . .
High-Voltage Transistors ..
RF Transistors . . . . . . . . . . . . . .
High·Speed Saturated Switching .....
Choppers . . . . . . . . . . . . . . . . . . .
Industrial Transistors . . . . . . . . . . . .
Telecom Transistors ...... .
Metal Packages
General-Purpose Transistors ..
High-Gain/Low-Noise Transistors ...
High-Voltage/High·Current
Transistors . . . . . . . . . . . . .
High-Frequency Amplifiers/
Oscillators . . . . . . . . . . . . .
Switching Transistors . . . . . . . . . . . .
Choppers . . . . . . . . . . . .
High-Gain Darlington Transistors .
FIELD-EFFECT TRANSISTORS
JFETs
Low-Frequency/Low·Noise ..
High·Frequency Amplifiers.
Switches and Choppers. . . .
MOSFETs
Dual Gate MOSFETs ..
Single Gate Low-Frequency/
Low·Noise ..
Switches and Choppers. .
1
1-29
1·29
1-29
1·29
1·30
1-32
2
1-33
3
1-36
4
1-36
5
1·38
1·38
6
DEVICES FOR HI-REL AND MILITARY APPLICATIONS
JAN, JANTX, JANTXV, and JANS
Switching and High-Frequency Transistors 1 . . . . . . . . 1·39
Multiple Devices. . . . . . . . . . .
2
1-39
Field·Effect Transistors . .
3 . . . . . . . . 1-39
CECC
Qualified Types . . . . . . . . . . . . . . . . 4
1-39
TUNING AND SWITCHING DIODES
Tuning Diodes
Abrupt Junction - General Purpose
Glass. . . . . . . . . . . .
PlastiC. . .
Dual Diodes . . . . . . . . . . . . . .
Hyper·Abrupt Junction
For FM Radio and TV . . . .
For AM Radio . . .
. . . . .
For High CapaCitance and High
Reliability Applications. . . . . .
Hot Carrier Diodes
Schottky. . . . . . . . . . . . . . . . .
Switching Diodes
PIN. . . . . . . . . . . . . . . . .
Signal and Switching Diodes
General-Purpose. . . . . . . . . . . .
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1
2
. . . . 3
1-40
1·42
1·43
4
. . . . 5
1·44
1·44
. . . . 6
1·44
7
1·45
8
1·45
. . . . 9
1-46
II
Small-Signal
Bipolar Transistors
•
,,'
3
CASE 29-04
TO-226AA
(TO-92)
,/
Plastic-Encapsulated
Motorola's small-signal TO-226 plastic transistors
encompass hundreds of devices with a wide variety
of characteristics for general purpose, amplifier and
switching applications. The popular high-volume
package combines proven reliability, performance,
economy and convenience to provide the perfect
solution for industrial and consumer design problems. All devices are laser marked for ease of identification and shipped in antistatic containers, as part
of Motorola's ongoing practice of maintaining the
highest standards of quality and reliability.
3
CASE 29-03
TO-226AE
(1 WATT TO-92)
Table 1. General-Purpose Transistors
The general-purpose transistors are designed for small-signal amplification from dc to low radio frequencies. They are also
useful as oscillators and general purpose switches.
fr@le
MHz
BC546
BC546A
BC546B
MPS8098
MPSA05
MPS651
BC182
MPS5209
MPS5210
BC237
BC547
BC547A
BC547B
BC547C
BC317
MPSA20
MPS6531
MPS2222
MPS3703
MPS3704
MPS6513
BC548
BC548A
BC548B
BC548C
MPS6514
MPS6515
MPS5172
MPS6560
MPS6601
BC238
MPS5222
MPS5223
BC556
BC556A
BC556B
MPS8598
MPSA55
MPS751
BC212
BC307
BC557
BC557A
BC557B
BC557C
BC320
MPSA70
MPS6534
MPS2907
MPS3705
MPS3702
MPS6517
BC558
BC558A
BC558B
BC558C
2N5227
2N5226
MPS6518
MPS6519
MPS6562
MPS6651
BC308
CBE
CBE
CBE
EBC
EBC
EBC
CBE
EBC
EBC
CBE
CBE
CBE
CBE
CBE
CBE
EBC
EBC
EBC
EBC
EBC
EBC
CBE
CBE
CBE
CBE
EBC
EBC
ESC
EBC
EBC
EBC
EBC
CBE
EBC
EBC
65
65
65
60
60
60
50
50
50
45
45
45
45
45
45
40
40
30
30
30
30
30
30
30
30
30
25
25
25
25
25
25
25
15
20
hFE@le
Min
mA
150
150
150
150
100
75
200
30
30
150
150
150
150
150
250
125
390'
250
100
100
330'
300'
300'
300'
300
100
50
480'
480
120'
60
100
150
450
150
10
10
10
10
10
50
10
0.5
0.5
10
10
10
10
10
10
5.0
50
20
50
50
10
10
10
10
10
10
20
10
10
5.0
10
50
10
4.0
10
100
100
100
200
500
2000
100
50
50
100
100
100
100
100
150
100
600
600
600
600
100
100
100
100
100
50
500
100
100
100
500
1000
100
50
100
Min
Max
mA
120
120
180
100
50
40
120
100
200
120
120
120
180
380
110
40
10
100
30
100
90
120
120
180
380
50
30
150
250
100
50
30
120
20
50
450
220
450
300
2.0
2.0
2.0
1.0
100
2000
2.0
0.1
0.1
2.0
2.0
2.0
2.0
2.0
2.0
5.0
100
150
50
50
2.0
2.0
2.0
2.0
2.0
2.0
50
2.0
2.0
10
600
1000
2.0
4.0
2.0
460
300
600
460
450
220
450
800
450
400
120
300
150
300
180
300
220
450
800
700
600
300
500
500
200
150
800
150
800
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-2
10
10
10
10
3.0
2.0
10
10
10
10
10
10
-
-
-
10
10
10
10
-
-
10
-
Table 2. Low-Noise and Good hFE Linearity
These devices are designed to use on applications where good hFE linearity and low noise characteristics are required:
Instrumentation, Hi-Fi Preamplifier.
(U'
Ie
Min
Max
rnA
100
250
250
150
250
250
120
180
180
180
380
380
500
100
250
180
180
180
380
380
50
350
120
450
300
-
10
10
10
10
0.1
0.1
2.0
2.0
2.0
2.0
2.0
2.0
2.0
10
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
TO-226AA (TO-92)
-
-
2N6428
2N6428A
BC239
BC414
BC5S0
BC550B
BC550C
BC651
MPSA18
MPS3904
-
MPS4249
2N5087
MPS4250A
2N5086
BC309
BC416
BCS60
BCS60B
BC560C
MPS3906
MPS4250
BC415
BC559
BC559B
BC459C
BC413
BC549
BC549B
BC459C
BC650
2N4123
2N5088
2N4124
2N5089
-
-
MPS6523
2N4125
2N4126
-
EBC
EBC
EBC
EBC
EBC
EBC
CBE
CBE
CBE
CBE
CBE
EBC
EBC
EBC
EBC
CBE
CBE
CBE
CBE
EBC
EBC
EBC
EBC
EBC
EBC
60
60
60
50
50
50
45
45
45
45
45
45
45
40
40
30
30
30
30
30
30
30
25
25
25
650
650
800
800
800
460
800
1400
300
800
800
800
800
1400
150
360
-
-
1 Vr Total Input NOise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at AS
2 NF NOise Figure at RS "" 2.0 k, Ie = 200 !LA, VeE "" 5 0 Volts. f = 30 Hz to 15 kHz
* "8" version.
=0
-
3.0
2.0
2.0
3.0
3.5'"
3.0'"
2.0
2.5
2.5
2.5
2.5
3.0"
2.0"
9.5
8.0
8.0
8.0
8.0
-
-
7.0
-
-
5.0
2.0
2.5
2.5
2.5
2.5
8.0
8.0
8.0
8.0
-
-
-
6.0
3.0
5.0
2.0
3.0
-
2.0 kH, Ie = 200 IJ-A, VeE
0:
100
40
250
40
lOOt
lOOt
240
250
250
250
250
300
160
200
250
250
250
250
250
300
300
150
350
150
340'
5.0 Volts
"RS = 10kll,BW = 1.0 Hz. ! = 100 MHz
... RS = 500 ll. BW = 10Hz.! = 10 MHz
tMIn
Table 3. Darlington Transistors
Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices
have monolithic construction.
TO-226AA (TO-92)
MPSA29
SC372
MPSA28
SC373
MPSA27
SC618
MPSA26
MPSA25
BC617
2N6427
2N6426
MPSA14
MPSA13
BC517
MPSA12
-
-
-
MPSA77
MPSA75
MPSA64
MPSA63
MPSA62
ESC
ESC
ESC
ESC
ESC
CSE
ESC
ESC
CSE
ESC
ESC
ESC
ESC
CSE
EBC
100
100
80
80
60
55
50
40
40
40
40
30
30
30
20
500
1000
500
1000
500
1000
500
500
1000
500
500
500
500
400
500
10K
25K
10K
25K
10K
10K
10K
10K
20K
20K
30K
20K
10K
30K
20K
160K
160K
50K
70K
200K
300K
-
100
100
100
100
100
200
100
100
200
100
100
100
100
20
10
1.4
10
1.4
10
1.5
11
1.5
1.5
1.1
1.5
1.5
1.5
1·.5
1.0
1.0
100
250
100
250
100
200
100
100
200
500
500
100
100
100
10
0.1
0.25
0.1
0.25
0.1
0.2
0.1
0.1
0.2
0.5
0.5
0.1
0.1
0.1
0.01
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-3
125
100
125
100
125
150
125
125
150
125
125
125
125
125
125
I
10
100
10
100
10
500
10
10
500
10
10
10
10
10
10
•
SMALL-SIGNAL BIPOLAR DEVICES -
PLASTIC-ENCAPSULATED (continued)
Table 4. High-Current Transistors
TO-226AA (TO-92) -
•
Po
= 625 mW
Pin
Out
V(BR)CEO
Volts
PornW
2S"C
Arnb
Ic(rnA)
Cont
CBE
CBE
CBE
CBE
CBE
CBE
CBE
CBE
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
45
25
60
80
100
45
60
80
60
80
80
50
80
40
60
60
625
625
625
625
625
625
625
625
625
625
625
625
625
625
625
625
800
800
300
300
300
1000
1000
1000
500
500
500
250
250
2000
2000
500
Pin
Out
V(BR)CEO
Volts
Min
IC
Arnp
Cont
hFE @
Min
BF421
BF423
BC640
BC639
BC636
BC369
ECB
ECB
ECB
ECB
ECB
ECB
300
250
80
60
45
20
0.1
0.1
1.0
1.0
1.0
1.0
TO-226AE (TQ-92) -
Po = 1 W
NPN
PNP
BC337
BC338
BC445
BC447
BC449
BC485
BC487
BC489
MPSA05
MPSA06
MPS8099
2N4409
2N4410
MPS650
MPS651
MPS8098
BC327
BC328
BC446
BC448
BC450
BC486
BC488
BC490
MPSA55
MPSA56
MPS8599
-
MPS750
MPS751
MPS8508
@
hFE
Min
Max
100
100
70
70
70
60
600
600
-
-
-
400
400
400
60
60
50
50
75
60
60
75
75
75
-
-
400
400
-
IC
rnA
VCE
(Volts)
IT Typical
100
100
10
10
10
100
100
100
100
100
100
10
10
1000
1000
100
1.0
1.0
5.0
5.0
5.0
2.0
2.0
2.0
1.0
1.0
5.0
1.0
1.0
2.0
2.0
5.0
210
210
250/200 1
250/200 1
250/200 1
200/150 1
200/150 1
200/150 1
150/175 1
150/175 1
200 1
200
200
100
100
150
(MHz)
1Relevant to PNP.
TO-226AA (TO-92) -
NPN
BF420
BF422
BC639
BC637
BC635
BC368
Po = 800 mW
PNP
NPN
PNP
Pin
Out
BDB01D
BDC01D
BDB01C
BDC01C
MPS6717
MPSW06
BOB01B
BOC01B
MPSW05
MPS6716
BOB01A
BOCOIA
MPS6715
MPSW01A
MPS6714
MPSWOl
BDB02D
BDC02D
BDB02C
BDC02C
MPS6729
MPSW56
BDB02B
BDC02B
MPS6728
MPSW55
BDB02A
BDC02A
MPS6727
MPSW51A
MPS6726
MPSW51
EBC
ECB
EBC
ECB
EBC
EBC
EBC.
ECB
EBC
EBC
EBC
ECB
EBC
EBC
EBC
EBC
V(BR)CEO
Volts
Min
MHz
100
100
80
80
80
80
60
60
60
60
45
45
40
40
30
30
40
50
40
40
40
60
VCE(sat)
Volts @
Max
IC
rnA
25
25
150
150
150
1000
Min
IC
Max
A
Min
Max
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
200
200
200
200
200
200
200
200
200
200
200
200
50
50
50
50
1.5
1.5
1.5
1.5
0.5
0.5
1.5
1.5
0.5
0.5
1.5
1.5
1.0
1.0
1.0
1.0
40
40
40
40
80
50
40
40
80
80
40
40
50
50
50
50
400
400
400
400
@
20
20
500
500
500
1000
2.0
2.0
0.5
0.5
0.5
0.5
IC
rnA
IT
@
hFE
-
400
400
400
400
-
-
-
IT
IC
rnA
IC
rnA
100
100
100
100
50
50
100
100
50
50
100
100
1000
1000
1000
1000
@
IB
rnA
2.0
2.0
50
50
50
100
VCE(sat)
Volts @
Max
0.7
0.7
0.7
0.7
0.5
0.4
0.7
0.7
0.4
0.5
0.7
0.7
0.5
0.5
0.5
0.5
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
1-4
MHz @
Min
60
60
60
60
60
65
IC
rnA
10
10
10
10
10
10
IC @ IB
rnA
rnA
1000
1000
1000
1000
250
250
1000
1000
250
250
1000
1000
1000
1000
1000
1000
100
100
100
100
10
10
100
100
10
10
100
100
100
100
100
100
Table 5. High-Voltage Amplifier Transistors
These high·voltage transistors are designed for driving neon bulbs and Nixie indicator tubes, for direct line operation, and for
other applications requiring high-voltage capability at relatively low collector current. These devices are listed in order of
decreasing breakdown voltage (V(BR)CEO).
BF844
MPSA44
BF845
MPSA45
2N6516
BF393
MPSA42
2N6517
BF392
2N6515
BF391
MPSA43
2N5551
2N5550
MPSLOl
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
0.5
0.3
0.5
0.3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.15
40
40
40
50
30
40
40
45
40
50
40
40
80
60
20
30
100
30
100
30
10
30
30
10
30
10
10
10
10
30
0.5
0.75
0.5
0.75
0.2
0.2
0.5
0.3
0.2
0.3
0.2
0.4
0.15
0.15
0.2
10
50
10
50
10
20
20
10
20
10
20
20
10
10
10
1.0
5.0
1.0
5.0
1.0
2.0
2.0
1.0
2.0
1.0
2.0
2.0
1.0
1.0
1.0
50
20
50
20
40
50
50
40
50
40
50
50
100
100
40
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
300
300
300
300
250
250
200
200
0.5
0.3
0.3
0.3
0.5
0.3
0.3
0.3
40
40
40
40
200
40
50
40
25
10
30
30
50
10
30
10
2.0
2.0
0.75
0.5
2.0
2.0
0.4
2.0
20
20
30
20
20
20
20
20
2.0
2.0
3.0
2.0
2.0
2.0
2.0
2.0
60
50
45
50
60
50
50
50
10
10
10
10
10
10
10
10
350
350
350
300
300
250
200
200
150
120
100
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
O.S
0.6
0.5
40
30
40
40
45
40
40
60
40
40
10
30
10
10
30
10
10
10
10
10
50
20
3.0
0.2
0.5
0.3
0.2
0.2
0.4
0.2
0.2
0.25
20
10
20
20
10
20
20
20
10
10
10
2.0
1.0
2.0
2.0
1.0
2.0
2.0
2.0
1.0
1.0
1.0
50
40
50
50
40
50
50
50
100
100
50
10
10
10
10
10
10
10
10
10
10
10
0.5
0.3
0.5
0.3
40
25
40
25
25
30
25
30
2.0
0.5
2.0
0.5
20
20
20
20
2.0
2.0
2.0
2.0
60
50
60
50
10
10
10
10
400
400
350
350
350
300
300
300
250
250
200
200
160
140
100
TO-226AE (1 WATT TO-92)
BDC05
MPS6735
MPSW10
MPSW42
BDC07
MPS6734
MPSW43
MPSS733
ECB
EBC
EBC
EBC
ECB
EBC
EBC
EBC
PNP Transistors
TO-226AA (TO-92)
BF493S
2N6520
BF493
MPSA92
2N6519
BF492
BF491
MPSA93
2N5401
2N5400
MPSL51
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
EBC
40
T0-226AE (1 WATT TO·92)
BDCOS
MPSW92
BDC08
MPSW93
ECB
EBC
ECB
EBC
300
300
250
200
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-5
•
SMALL-SIGNAL BIPOLAR DEVICES -
PLASTIC-ENCAPSULATED (continued)
Table 6. RF Transistors
The RF transistors are designed for Small Signal amplification from RF to VHF/UHF frequencies. They are also used as mixers
and oscillators in the same frequency ranges. Several types are AGe characterized.
•
BF373
BF241
BF240
BF224
MPSH32
MPSH24
MPSH20
MPSH07
MPS3866
BF371
MPSH11
MPSH10
BF375
BF374
BF199
MPSH30
BF959
BF254
MPSH17
MPS918
MPS5179
MPS3563
MPSH04
PNP -
30
30
30
25
25
25
25
25
20
20
20
15
15
12
12
10
100
25
25
50
30
100
100
25
400
100
25
100
100
100
100
50
100
100
100
50
50
50
30
38
35
65
30
27
30
25
20
10
38
60
60
35
70
40
20
40
65
25
20
25
20
30
7.0
1.0
1.0
7.0
4.0
8.0
4.0
3.0
50
7.0
4.0
4.0
1.0
1.0
7.0
4.0
20
1.0
5.0
8.0
3.0
8.0
1.5
10
10
10
10
5.0
10
10
10
5.0
10
10
10
10
10
10
5.0
10
10
10
10
1.0
10
10
720
470
600
600
300"
400"
400"
400"
SOD"
720
660"
1500
800
800
750
300"
800
260
1600
800
2000
800
80"
80
35
25
20
100
50
50
50
30
20
20
60
1.5
3.0
2.0
5.0
10
10
10
10
80
600
300"
700
45
40
40
30
30
30
BEC
CEB
CEB
CEB
BEC
BEC
BEC
EBC
EBC
BEC
BEC
BEC
BEC
BEC
CEB
BEC
CEB
CEB
BEC
EBC
EBC
EBC
EBC
30
0.32·
0.34
0.34
0.28
0.36
-
-
2.5
2.5
2.5
3.3"
-
-
-
-
-
0.3
-
-
-
-
0.23
0.7
0.6
0.6
0.35
-
4.0
4.0 '
2.5
6.0"
3.0
1.7
6.er
6.0"
4.5"
6.0"
2.0"
0.65
0.9
0.9
1.7
1.7
-
100
100
100
45
100
100·
35
100
200
1.0
200
60
200
60
1.0
TO-226AA (TO-92)
MPSH55
BF506
2N5208
MPSH81
BEC
CBE
BEC
BEC
-
-
0.25
4.0
3.0"
-
-
0.85
-
200
100
-
"Max
Table 7. High-Speed Saturated Switching Transistors
The transistors listed in this table are specially optimized for high-speed saturated switches. They are heavily gold doped and
processed to provide very short switching times and low output capacitance (below 6 pF). The transistors are listed in order
of decreasing turn-on time (Ion).
.
2N3904
2N3903
2N4401
2N4400
2N4264
2N4265
MPS3646
MPS2369
PNP -
70
70
35
35
25
25
18
12
250
225
225
255
35
35
28
18
10
10
10
150
10
10
300
10
40
40
40
40
15
12
15
15
100
50
40
50
40
100
30
40
10
10
10
150
10
10
10
0.2
0.2
0.4
0.4
0.22
0.22
0.2
0.25
10
10
10
150
10
10
30
10
1.0
1.0
1.0
15
1.0
1.0
3.0
1.0
300
250
250
200
300
300
350
500
10
10
20
20
10
10
30
10
300
300
10
10
150
150
50
10
10
25
25
40
40
40
40
12
12
15
20
20
100
100
50
100
30
30
50
300
300
10
10
150
150
10
50
10
0.25
0.25
0.25
0.25
0.4
0.4
0.2
0.15
0.18
50
50
10
10
150
150
10
10
10
2.5
2.5
1.0
1.0
15
15
1.0
1.0
1.0
100
150
250
200
150
200
500
700
850
50
50
10
10
20
20
10
10
10
30
TO-226AA (TO-92)
2N3638
2N3638A
2N3906
2N3905
2N4402
2N4403
MPS3640
MPS4258
2N5771
75
75
70
70
35
35
25
15
15
170
170
250
225
255
225
35
20
20
1V(BR)EBO
"Typ
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-6
Table 8. Choppers
Table 9. Industrial Transistors
These devices are special products ranges intended for use in applications which require well specified high performing devices
like high quality amplifier differential input, driver stage.
TO-226AA (TO-92)
BCX59
MPS2222A
BCX58
MPS2907A
BCX79
EBC
CBE
EBC
CBE
BCX78
60
45
40
32
600
200
600
200
100
120
75
120
-
10
2.0
10
2.0
630
630
10
5.0
10
5.0
200·
250
300'
250
-
45
75
30
75
2.0
2.0
100
600/350
270
600/350
·tr Min
Table 10. Telecom Transistors
These devices are special product ranges intended for use in Telecom application which require an excellent long term reliability.
Device
Type
NPN -
TO-226AA (T0-92)
P2N2222
P2N2222A
(1 )PBF259,S
(1 )PBF259R,RS
PNP -
CBE
CBE
EBC
CBE
30
40
300
300
625
625
625
625
600
600
500
500
75
75
25
25
40
60
300
300
625
625
625
625
600
600
500
500
75
100
40
40
-
-
10
10
1.0
1.0
10
10
10
10
250
300
40
40
10
10
1.0
1.0
10
10
10
10
200
200
40
40
TO-226AA (T0-92)
P2N2907
P2N2907A
(2)PBF493,S
(2)PBF493R,RS
CBE
CBE
EBC
CBE
(1) " 5 " verSion, hFE Min 60", Ie
(2) "5" version, hFE Min 40", Ie
~
~
-
-
20 mA, VeE ~ 10 V.
0.1 mA, VeE ~ 1.0 V.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-7
•
Small-Signal
Metal Packaged Transistors
CASE20_0!
TO-72
CASE
22_!
T0'18
3 24 1
•
3
2
1
'/ ,J If!
CASE 26-03
TO-46
CASE 27-02
TO-52
CASE 79-04
TO-205AD
Table 11. General-Purpose Transistors
These transistors are designed for dc to VHF amplifier applications, general-purpose switching applications, and complementary
circuitry. Devices are listed in decreasing order of V(BR)CEO within each package group.
Device
Type
NPN -
TO-206AA (TO-18)
2N2896
2N720A
2N3700#
2N2895
2N910
2N956
2N2897
2N915
BC107
BC107A
BC107B
BC107C
BCY59
BCY59-IX
BCY59-VII
BCY59-VIII
BCY59-X
2N2218#
2N2221A#
2N2222A#
2N3946
2N3947
2N718
BCY58
BCY58-IX
BCY58-VII
BCY58-VIII
BCY58-X
2N2221
2N2222#
2N3302
2N916"
BC108
BC108A
BC108B
BC108C
BC109
BC109A
BC109B
BC109C
2N706
2N706A
2N706B
90
80
80
65
60
50
45
50
45
45
45
45
45
45
45
45
45
40
40
40
40
40
40
32
32
32
32
32
30
30
30
25
25
25
25
25
25
25
25
25
15
15
15
120
50
80
120
60
70
100
250
150
150
150
150
125
125
125
125
125
250
250
300
300
300
50
125
125
125
125
125
250
250
250
300
150
150
150
150
150
150
150
150
200
200
200
50
50
1.0
50
50
50
50
10
10
10
10
10
10
10
10
10
10
20
20
20
10
10
50
10
10
10
10
10
20
20
50
10
10
10
10
10
10
10
10
10
10
10
10
1000
150
1000
1000
1000
1000
30
200
200
200
200
200
200
200
200
200
800
800
800
200
300
200
200
200
200
200
800
800
500
100
100
100
100
100
100
100
100
50
50
50
60
40
50
40
75
40
50
50
110
110
200
420
120
250
120
180
380
40
40
100
50
100
40
120
250
120
180
380
40
100
100
50
110
110
200
420
200
110
200
420
20
20
20
200
120
120
120
200
200
450
220
450
800
630
460
220
310
630
120
120
300
150
300
120
630
460
220
310
630
.120
300
300
200
800
220
450
800
800
220
450
800
#JAN/JANTXlJANTXV available
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-8
60
60
150
150
500
150
10
150
150
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
150
150
10
10
150
2.0
2.0
2.0
2.0
2.0
150
150
150
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
10
-
Table 11. General-Purpose Transistors (continued)
Device
Type
NPN -
TO·20SAD (TO·39)
2N1711
2N694
2N3019#
2N3020
BSX47-10
BSX47-16
BSX47-6
2N1893
2N2102
BC141
BC141-10
BC141-16
2N697
BSX46-10
BSX46-16
BSX46-6
2N3053A
2N3073
2N1613#
2N2270
2N2219A#
2N3053
2N697
BC140
BC140-1O
BC140-16
BSX45-10
BSX45-16
BSX45-6
BFY50
2N2218#
2N2219#
2N3300
BFY51
BFY52
NPN -
80
80
80
80
80
80
80
80
65
60
60
60
60
60
60
60
60
60
50
45
40
40
40
40
40
40
40
40
40
35
30
30
30
30
20
-
-
50
50
50
50
50
50
60
250
250
250
50
50
50
50
50
20
20
20
50
20
20
50
50
50
150
1000
1000
1000
1000
1000
500
1000
1000
1000
1000
150
1000
1000
1000
700
500
500
1000
800
700
200
1000
1000
1000
1000
1000
1000
1000
800
800
500
1000
1000
100
100
150
150
200
200
250
300
60
200
200
200
200
10
180
180
180
180
200
200
250
300
250
50
50
50
50
50
50
10
10
50
10
10
10
10
200
10
10
10
10
50
50
10
10
10
1000
1000
1000
1000
600
600
200
200
500
200
200
200
200
200
200
200
200
200
600
600
200
200
200
70
50
100
80
50
50
50
50
60
50
50
50
50
50
50
50
20
20
20
50
50
50
50
50
-
-
50
50
50
100
130
60
100
300
100
20
20
20
50
50
50
50
20
50
100
40
100
40
63
100
40
40
40
40
63
100
40
63
100
40
50
30
40
50
100
50
40
40
63
100
63
100
40
30
40
100
100
40
50
300
120
300
120
160
250
100
120
120
400
160
250
120
160
250
100
250
130
120
200
300
250
120
400
160
250
160
250
100
15
10
40
25
40
100
50
100
40
120
120
180
380
100
250
120
180
380
40
100
50
100
50
-
120
300
300
-
150
150
150
150
100
100
100
150
150
100
100
100
150
100
100
100
150
50
150
150
150
150
150
100
100
100
100
100
100
150
150
150
150
150
150
TO-20SAD (TO-46)
2N5581··
2N5582··
MM3903
MM3904
PNP -
TO-206AA (TO-18)
2N4026
2N4027
2N4028
2N4029
2N2906A#
2N2907A
2N3250A#
2N3251A#
2N718A
BC177
BC177A
BC177B
BC177C
BCY79
BCY79·IX
BCY79·VII
BCY79·VIII
BCY79·X
2N2906#
2N2907#
2N3250
2N3251
BCY70
••JAN/JANTX aVa,lable
80
80
80
80
60
60
60
60
50
45
45
45
45
45
45
45
45
45
40
40
40
40
40
-
120
300
150
300
300
460
220
460
800
600
460
220
310
630
120
300
150
300
-
#JAN/JANTXlJANTXV ava,lable
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-9
100
100
100
100
150
150
10
10
150
2.0
2.0
2.0
2.0
10
2.0
2.0
2.0
2.0
150
150
10
10
10
•
SMALL-SIGNAL BIPOLAR TRANSISTORS -
METAL (continued)
Table 11" General-Purpose Transistors (continued)
iT
Device
MHz
Type
•
PNP -
TO-206AA (TO-18) (continued)
2N3135
BCY78-IX
BCY78-VII
BCY78-VIII
BCY78-X
BC178
BC178A
BC178B
BC178C
BCY72
BC179
BC179A
BC179B
BC179C
2N3249
PNP -
50
10
10
10
10
10
10
10
10
10
10
10
10
10
20
500
200
200
200
200
200
200
200
200
200
200
200
200
200
200
40
250
120
180
380
120
120
180
380
50
180
120
180
380
35
125
460
220
310
630
BOO
220
460
800
30
100
150
50
50
30
100
100
60
60
200
200
130
100
150
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
10
.25
63
40
50
85
40
40
40
40
100
30
15
40
40
63
100
40
63
100
40
50
50
30
40
100
250
800
220
460
BOO
-
50
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
10
2.0
2.0
2.0
2.0
100
100
80
80
80
80
80
75
75
65
65
60
60
60
60
60
60
60
60
60
60
60
60
60
40
40
40
40
40
40
40
40
40
40
40
40
35
50
50
50
50
30
100
60
200
200
50
50
50
50
50
50
50
60
60
·SO
50
50
50
50
50
50
50
50
50
2000
1000
1000
1000
1000
2000
1000
1000
1000
1000
BOO
600
500
1000
1000
1000
1000
1000
1000
1000
1000
1000
2000
1000
600
600
600
1000
1000
1000
1000
1000
1000
1000
1000
600
200
200
200
200
50
50
50
50
600
600
600
600
SO
50
50
50
50
50
50
50
SO
63
100
40
63
100
40
50
30
400
160
250
100
160
250
100
250
250
90
120
300
400
160
250
100
160
250
100
250
90
250
100
100
100
100
200
100
100
150
150
150
150
50
100
100
100
100
100
100
100
100
100
150
150
150
150
150
100
100
100
100
100
100
100
150
150
40
100
40
100
120
300
120
300
150
150
150
150
40
160
100
250
-
-
140
120
300
130
-
TO-205AD (To-46)
2N3485N"
2N34B6N"
2N3485
2N3486
PNP -
200
180
180
180
180
200
200
200
200
250
200
200
200
200
300
TO-205AD (TO-39)
MM5007
2N4031
2N4033#
BSV17-10
BSV17-16
MM5006
BFX40
BFX41
2N4036
2N4037
2N2904A#
2N2905A
2N3073
2N4030
2N4032
BC161
BC161-10
BC161-16
BC161-6
BSV16-10
BSV16-16
BSV16-6
MM5005
2N4890
2Nl132A
2N2904#
2N2905#
BC160
BC160-10
BC160-16
BC160-6
BSV15-10
BSV15-16
BSV15-6
MM4037
2Nl132
PNP -
35
32
32
32
32
25
25
25
25
25
20
20
20
20
12
60
60
40
40
TO-205AD (TO-52)
MM3906
MM3905
*JAN available
""JAN/JANTX available
#JAN/JANTXlJANTXVava,lable
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-10
Table 12. High-Gain/Low-Noise Transistors
These transistors are characterized for high-gain and low-noise applications. Devices are listed in decreasing order of NF.
NF
Wideband
Typ* Max
dB
Device
Type
NPN -
IC
for
IC
V(BR)CEO
Volls
Min
Max
Min
60
80
60
45
60
60
200
200
200
200
50
50
100
100
250
250
150
300
45
30
100
mA
hiE
/LA
mAo
MHz
Min
450
450
600
600
450
900
1.0'
1.0'
1.0'
1.0'
500
500
40
40
50
50
30
30
0.5
0.5
0.5
0.5
0.5
0.5
300
10
30
0.5
(a
I
Max
@l
IC
I
mA
TO-206AA (TO-18)
2N2484#
2N930A
2N930"
PNP -
TO-206AA (TO-18)
2N3962
2N3963
2N3965
2N3964
2N3798
2N3799
PNP -
10
10
8.0
4.0
3.5
2.5
TO-206AB (TO-46)
I 2N2605#
I
4.0
Table 13. High-Voltage/High-Current Transistors
The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in
decreasing order of V(BR)CEO within each package type.
Device
Type
NPN -
IC
mA
TO-206AA (TO-18)
2N6431
BSS73
BSS72
2N6430
BSS71
BC394
NPN -
V(BR)CEO
Volls
300
300
250
200
200
180
50
500
500
50
500
500
50
40
40
50
40
30
30
30
30
30
30
10
0.5
0.5
0.5
0.5
0.5
0.3
20
50
50
20
50
10
2.0
5.0
5.0
2.0
5.0
1.0
50
100
100
50
100
50
10
20
20
10
20
20
1000
150
100
1000
50
150
50
100
500
50
50
400
200
300
300
200
2000
1000
2000
500
500
1000
40
35
25
40
20
30
20
25
40
20
20
20
30
30
20
30
30
10
30
30
30
10
10
10
150
150
30
500
250
500
150
150
250
200
250
250
200
0.5
1.0
1.0
0.5
2.0
1.0
50
30
30
50
30
30
4.0
3.0
6.0
4.0
3.0
3.0
15
30
110
15
30
30
150
110
70
30
150
50
150
150
150
40
10
10
30
10
10
10
10
30
20
10
10
20
10
20
20
30
TO-205AD (TO-39)
2N3439#
2N5058
BF259
2N3440#
2N4927
2N5059
MM3003
BF258
BSS78
2N4926
MM3002
MM3009
MM3001
2N3500#
2N3501#
3N3114
BSW68A
2N5682
BSW67A
2N3498#
2N3499#
2N5681
2N657
MM3007
2N4239
MM3006
350
300
300
250
250
250
250
250
250
200
200
180
150
150
150
150
150
120
120
100
100
100
100
100
80
80
#JAN/JANTXlJANTXVavailable
2500
3000
2500
40
20
40
100
30
30
40
30
40
100
40
300
50
30
50
-
-
-
1.0
0.4
2.0
30
30
30
6.0
3.0
3.0
-
-
-
150
150
50
500
250
500
300
300
250
200
150
500
150
15
15
5.0
150
25
150
30
30
25
40
15
50
15
-
0.4
0.4
1.0
1.0
0.6
1.0
0.6
0.6
0.6
4.0
0.35
0.3
0.35
-
-
"JAN/JTX
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-11
-
-
30
100
-
-
150
150
30
20
20
100
-
-
50
2.0
50
50
100
50
•
SM~LL-SIGNAL
BIPOLAR TR.ANSISTORS -
METAL (continued)
Table 13. High-Voltage/High-Current Transistors (continued) .
•
PNP -
TO-206AA (TO-18)
2N6433
BSS76
BSS75
2N6432
BSS74
BC393
2N3497
2N3496
PNP -
300
300
250
200
200
180
120
80
500
500
500
1000
500
500
100
100
30
35
35
30
35
50
40
40
30
30
30
30
30
10
10
10
0.5
0.5
0.5
0.5
0.5
0.3
0.35
0.3
20
50
50
20
50
10
10
10
20
5.0
5.0
2.0
5.0
1.0
1.0
1.0
50
100
100
50
100
50
150
200
10
20
20
10
20
20
20
20
100
100
1000
1000
1000
50
3000
3000
3000
100
500
500
500
1000
1000
1000
1000
1000
100
500
500
500
2000
2000
2000
40
40
100
50
100
25
30
30
30
25
25
20
20
30
30
40
40
50
20
20
20
20
50
50
50
10
10
50
50
50
30
250
250
250
10
10
20
20
50
50
250
250
50
20
10
10
10
150
200
250
0.3
0.35
0.5
0.5
0.5
8.0
0.6
0.6
0.6
0.5
0.5
5.0
5.0
2.5
2.5
0.6
0.6
0.5
0.6
0.6
5.0
5.0
0.5
0.5
0.5
10
10
50
50
50
30
1000
1000
1000
10
10
10
10
50
50
250
250
50
10
10
10
10
150
150
150
1.0
1.0
5.0
5.0
5.0
3.0
125
125
125
1.0
1.0
1.0
1.0
5.0
5.0
25
25
5.0
1.0
1.0
1.0
1.0
15
15
15
200
150
200
150
200
30
3.0
3.0
3.0
100
100
20
20
15
15
30
30
150
20
20
30
30
30
10
100
100
100
20
20
20
20
10
10
100
100
30
TO-205AD (TO-39)
80
120
140
175
175
300
40
60
80
100
150
200
250
200
300
100
120
140
100
150
200
250
12N3494
2N3495
2N3635#
I 2N3636#
I 2N3637#
2N3743#
2N4234
2N4235
2N4236
2N4928
2N4929
2N4930#
2N4931#
2N5415#
2N5416#
2N5679
2N5680
2N3634#
MM4000
MM4001
MM4002
MM4003
MM5005
MM5006
MM5007
60
80
100
-
-
30
30
30
50
50
50
-
-
#JAN/JANTX/JANTXV available
Table 14. High-Frequency Amplifiers/Oscillators
The transistors shown are designed for use as both oscillators and amplifiers at UHF and VHF frequencies. Devices are listed
in decreasing order of V(BR)CEO with each line.
Device
Type
NPN -
TO-206AF (TO-72)
I 2N918t
PNP -
I
15
20
3.0
15
6.0
60
600
4.0
1.7
40
25
30
30
2.0
2.0
10
10
17
17
-
4.5
6.0
200
200
-
-
-
300
300
1600
2000
2.0
2.0
10
10
1.3
1.6
2.5
2.5
TO-206AF (TO-72)
! 2N3307
12N3308
2N4261#
2N4260
35
25
15
15
-
tJAN/JANTXlJANTXV/JANS available
#JAN/JANTXlJANTXV available
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-12
Table 15. Switching Transistors
The following devices are intended for use in general-purpose switching and amplifier applications. Within each package group
shown, the devices are listed in order of decreasing turn-on time (Ion).
Device
Type
NPN -
TO-20SAA (TO·18)
2N3012
2N708
2N2540
2N914""
2N2481
2N4014
2N4013
2N834
2NB35
2N2501
2N2369
2N3011
2N3013
2N3014
2N2369At
2N2368
2N3227
BSX20
NPN -
18
18
30
10
150
200
100
500
500
10
10
300
100
30
300
30
10
10
100
100
12
15
30
15
15
50
30
40
40
20
15
12
15
20
15
15
20
15
800
800
70
70
60
60
70
90
90
70
70
60
60
60
60
60
500
500
500
500
1000
1000
500
1500
1500
500
100
500
500
500
1000
500
75
50
50
40
50
50
30
40
50
30
40
50
30
45
40
50
15
10
90
80
30
20
20
20
30
30
50
10
10
10
-
-
10
20
20
500
100
100
300
100
10
10
100
10
100
10
150
200
100
500
500
50
50
50
10
100
300
100
10
10
10
10
10
1.0
15
20
10
50
50
5.0
5.0
5.0
1.0
10
30
10
1.0
1.0
1.0
1.0
3000
3000
1000
2000
2000
2000
1000
2000
2000
30
40
20
25
20
30
30
40
30
30
15
35
35
25
25
25
500
500
500
500
1000
1000
500
1500
1500
500
1000
500
500
500
1000
500
0.5
0.8
0.6
0.6
0.5
0.5
0.5
1.0
1.0
0.5
0.7
0.52
0.42
0.5
0.8
0.5
500
500
500
500
500
500
500
1500
1500
500
1000
500
500
500
1000
500
50
50
50
50
50
50
50
150
150
50
100
50
50
50
100
50
150
20
10
I - I
600
5.0
200
200
40
40
25
30
30
50
30
30
50
10
10
10
3.0
3.0
5.0
1.0
1.0
5.0
400
400
700
700
700
850
30
10
10
10
10
10
150
150
1000
1000
200
200
500
500
500
500
200
200
50
500
20
30
100
12
40
35
35
25
10
20
12
15
25
40
20
30
20
100
10
150
10
10
500
500
10
300
250
300
0.5
0.4
0.45
0.7
0.4
0.52
0.42
0.4
0.4
0.3
0.25
0.5
0.5
0.35
0.2
0.25
0.25
0.25
200
30
-
-
-
300
300
350
350
350
500
400
350
350
500
400
500
400
50
50
10
10
10
10
20
30
30
10
10
10
10
TO-205AD** (TO-39)
2N5320
2N5321
2N3444""
2N3253""
2N3735#
2N3734
2N3252
2N3506#
2N3507#
BSX60
2N5859
2N3725
2N3724
BSX59
MM5262
2N5861
NPN -
75
70
40
40
55
60
60
40
40
25
18
20
25
25
18
60
40
40
40
40
35
35
35
35
15
12
15
15
16
12
12
12
7.0
80
80
50
50
48
48
45
45
45
40
36
35
35
35
30
25
2000
2000
1500
1500
-
-
-
-
-
175
175
250
250
200
60
60
50
50
50
50
50
100
100
-
-
25
300
300
50
50
50
-
-
350(typ)
200
50
50
TO·205AD (T0-4S)
2N3737#
2N3648
NPN -
TO-205AD (TO-52)
PNP -
TO·20SAA (TO-18)
I MM1748A
2N2894
2N869A"
2N3546
2N4208
MM4258
2N4209
I
10
60
50
40
15
15
15
I
12
18
12
12
12
15
200
200
200
0.2
0.2
0.25
0.15
0.15
0.6
30
30
50
10
10
50
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-13
•
SMALL-SIGNAL BIPOLAR TRANSISTORS - METAL (continued)
Table 15. Switching Transistors (continued)
Device
Type
PNP -
•
TO-205AD (TO·39)
2N4036
2N5322
2N5323
2N4406
2N4407
2N3245
2N3244
2N4453··
2N3467#
2N3468#
2N4404
2N4405··
2N5022
2N5023
2N2800
2N3764
2N3765
2N3762#
2N3763#
110
100
100
75
75
55
50
50
40
40
40
40
40
40
34
11.5
11.5
11.5
11.5
"hJAN/JANTX available
700
1000
1000
225
225
165
185
80
90
90
210
210
90
90
270
65
65
65
65
150
500
500
1000
1000
500
500
30
1000
2000
2000
1500
1500
1000
1000
200
100
1000
1000
1000
500
500
800
1500
1500
1500
1500
65
75
50
80
80
50
40
18
40
50
80
80
SOO
500
500
500
500
500
150
100
100
100
100
-
35
40
60
40
60
40
30
40
20
30
30
50
25
40
25
30
50
25
40
25
30
20
30
20
150
500
500
1000
1000
500
500
100
500
500
500
500
1000
1000
500
1000
1000
1000
1000
0.65
0.7
1.2
0.7
0.7
0.6
0.5
0.5
0.5
0.6
0.5
0.5
0.8
0.7
1.2
0.9
0.9
0.9
0.9
150
500
500
1000
1000
500
500
100
500
500
500
500
1000
1000
500
1000
1000
1000
1000
15
50
50
100
100
50
50
10
50
50
50
50
100
100
50
100
100
100
100
50
60
-
-
150
150
150
175
400
175
150
200
200
170
200
120
180
150
180
150
50
50
50
50
10
50
50
50
50
50
50
50
50
50
50
50
-
t JAN/JANTXlJANTXV/JANS available
#JAN/JANTXlJANTXV available
Table 16. Choppers
Devices are listed in decreasing V(BR)EBO.
PNP -
TO·20SAB (TO-4S)
V(BRIEBO
Mn
V(BRIECO
hFE(inv)
Min
VEC(Of~
Max(m)
On-State
Resistance
rec(on)
Max (0)
40
40
30
25
25
35
35
20
20
20
20
3.0
15
30
4.0
0.5
0.8
0.5
1.0
1.0
8.0
8.0
8.0
6.0
35
Offset Voltage
Device
2N2946A
2N2946
2N5230
2N2945A
2N2945
Table 17. High-Gain Darlington Transistors
NPN -
TO-20SAF (TO-72)
Device
2N2723
2N2785
NPN -
Min
V(BR)CB10
80
60
V(BR)CE20
60
40
V(BR)E2Bl0
12
15
2000
2000
40
50
12
10000
TO-20SAA (TO-1S)
I MM6427
I
hiE
I
Max
IC
10000
20000
10
100
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-14
100
Small-Signal Field-Effect Transistors
I~
JFETs·
CASE 20-03
TO-72
JFETs operate in the depletion mode. They are available
in both P- and N-channel are are offered in both metal and
plastic packages. Applications include general-purpose
amplifiers. switches and choppers. and RF amplifiers and
mixers. These devices are economical and very rugged. The
drain and source are interchangeable on many typical FETs.
3 24 I
3 2
CASE79_03
TO-226AE
I WATT
CASE 22/h_3
TO-IS
CASE 27-02
I
3 2 I TO-52 1
2
CASE 29-04
TO-226M
CASE 79-04
CASE 79-05
(ji;)TO-205AD
"I"
3/(ra
P-Channel JFETs
Re IVlsl
Re IVosl
Crss
Ciss
!;::J~3
CASE
3
Table 1. Low-Frequency/Low-Noise
V(BR)GSS
VCBRIGOO
lOSS
VOSCoffl
(V)
Package
TO-
Device
3
(mA)
(mmho)
Min
(pmho)
Max
(pF)
Max
(pF)
Max
(V)
Min
Min
Max
Min
Max
72
2N3909
1.0
100
32
16
20
0.3
7.9
0.3
15
92
MPF2608
1.0
-
17
-
30
1.0
4.0
0.9
4.5
92
2N5460
1.0
50
7.0
2.0
40
0.75
6.0
1.0
5.0
92
2N5463
1.0
75
7.0
2.0
60
0.5
4.0
1.0
5.0
72
2N3330
1.5
40
20
20
2.0
6.0
MPF3330
1.5
40
20
20
-
6.0
92
-
6.0
2.0
6.0
92
2N5461
1.5
50
7.0
2.0
40
1.0
7.5
2.0
9.0
92
2N5464
1.5
75
7.0
2.0
60
0.8
4.5
2.0
9.0
92
2N5462
2.0
50
7.0
2.0
40
1.8
9.0
4.0
16
92
2N5465
2.0
75
7.0
2.0
60
1.5
6.0
4.0
16
72
2N3331
2.0
100
20
-
20
-
8.0
5.0
15
72
2N3909A
2.2
100
9.0
3.0
20
0.3
7.9
1.0
15
92
J271
6.0
200
32
8.0
30
0.5
2.0
2.0
15
N-Channel JFETs
Re IVlsl
Re IVosl
@
Package
TO-
(mmho)
I
Min
(MHz)
Ciss
Crss
V(BR)GSS
VCBRIGOO
VGSCoffl
lOSS
(V)
(mA)
@
(pmho)
Max
I
(MHz)
(pF)
Max
(pF)
Max
(V)
Min
Min
Max
Min
Max
18
2N3370
0.3
30
15
30
20
3.0
40
-
3.2
0.1
0.6
92
J201
0.5
20
1.0t
20
5.0t
2.01
40
0.3
1.5
0.2
1.0
18
2N4339
0.8
15
15
15
7.0
3.0
50
0.6
1.8
0.5
1.5
92
MPF4339
0.8
15
15
15
7.0
3.0
50
0.6
1.8
0.5
1.5
18
2N3460
0.8
20
5.0
30
18
6.0
50
-
1.8
0.2
1.0
18
2N3438
0.8
20
5.0
30
18
6.0
50
-
2.3
0.2
1.0
72
2N4220
1.0
15
10
15
6.0
2.0
30
-
4.0
0.5
3.0
72
2N4220A
1.0
15
10
15
6.0
2.0
30
-
4.0
0.5
3.0
Device
1 = typical
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
1-15
•
SMALL-SIGNAL FIELD-EFFECT TRANS~STORS (continued)
Table 1. Low-Frequency/Low-Noise (continued)
N-Channel JFETs (continued)
Re IVlsl
•
Re IVosl
@
Package
TO-
t
~
V(BR)GSS
V(BR)GOO
Crss
Ciss
VG$(~ff)
@
lOSS
(mA)
(V)
(pmho)
(mmho)
I
I
(MHz)
(MHz)
Min
Max
(pF)
Max
(pF)
Max
Min
(V)
Min
Max
Min
Max
18
2N4348
0.6
0.001
5.0
0.001
6.0
2.0
50
0.3
1.0
0.2
0.6
92
J202
1.0
20
3.51
20
5.01
2.01
40
0.8
4.0
0.9
4.5
72
2N5359
1.2
15
10
15
6.0
2.0
40
0.8
4.0
0.6
1.6
18
2N4340
1.3
15
30
15
7.0
3.0
50
1.0
3.0
1.2
3.6
72
2N5360
1.4
15
20
15
6.0
2.0
40
0.8
4.0
0.5
2.5
92
2N5458
1.5
15
50
15
7.0
3.0
25
1.0
7.0
2.0
9.0
5.0
Device
72
2N5361
1.5
15
6.0
1.0
6.0
2.5
1.5
20
20
5.01
2.0
2.01
40
J203
20
101
15
92
40
2.0
10
4.0
20
18
2N3459
1.5
20
20
30
18
6.0
50
-
3.4
0.8
4.0
72
2N3821
1.5
15
10
15
6.0
3.0
50
-
4.0
0.5
2.5
92
MPF3821
1.5
15
10
15
6.0
3.0
50
4.0
0.5
2.5
18
2N3437
1.5
20
20
30
18
6.0
50
-
4.8
0.8
4.0
92
2N5457
2.0
15
50
15
7.0
3.0
25
0.5
6.0
1.0
5.0
92
2N5459
2.0
15
50
15
7.0
3.0
25
2.0
8.0
4.0
16
72
2N4221
2.0
15
20
15
6.0
2.0
30
6.0
2.0
6.0
92
MPF4221
2.0
15
20
15
6.0
2.0
30
6.0
2.0
6.0
72
2N4221 A
2.0
15
20
15
6.0
2.0
30
6.0
2.0
6.0
72
2N3822
2.0
15
20
15
6.0
3.0
50
6.0
2.0
10
92
MPF3822
2.0
15
20
15
6.0
3.0
50
-
6.0
2.0
10
18
2N4341
2.0
15
60
15
7.0
3.0
50
2.0
6.0
3.0
9.0
72
2N4222
2.5
15
40
15
6.0
2.0
30
5.0
15
2N4222A
2.5
15
40
15
6.0
2.0
30
-
8.0
72
8.0
5.0
15
92
MPF4222A
2.5
15
40
15
6.0
2.0
30
-
8.0
5.0
15
18
2N4398
121
0.001
-
-
14
3.5
40
0.5
3.0
5.0
30
72
2N4118
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
92
MPF4118
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
72
2N4118A
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
92
MPF4118A
80
0.001
5.0
10
3.0
1.5
40
1.0
3.0
80
240
tYPical
Table 2. High-Frequency Amplifiers
N-Channel JFETs
Re IVlsl
Re IVosl
@
Ciss
V(BR)GSS
ViBRIGOO
NF
Crss
@
@
VGSloffl
(V)
lOSS
(mA)
(pmho)
Max
I
(MHz)
(pF)
Max
(pF)
Max
(dB)
Max
RG = 1K
I (MHz)
(V)
Min
Min
Max
Min
100
100
100
7.0
3.0
2.5
100
25
1.0
6.0
4.0
10
1.6
100
200
100
7.0
3.0
-
25
-
8.0
2.0
20
2N3819
1.6
100
-
-
8.0
4.0
-
-
25
-
8.0
2.0
20
2N5668
1.0
100
50
100
7.0
3.0
2.5
100
25
0.2
4.0
1.0
5.0
(mmho)
I
Min
(MHz)
Package
TO·
Device
92
2N5669
1.6
92
MPF102
92
92
Max
92
MPF4224
1.7
200
200
200
6.0
2.0
-
-
30
0.1
8.0
2.0
20
92
2N5484
2.5
100
75
100
5.0
1.0
3.0
100
25
0.3
3.0
1.0
5.0
92
2N5670
2.5
100
150
100
7.0
3.0
2.5
100
25
2.0
8.0
8.0
20
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-16
Table 2. High-Frequency Amplifiers (continued)
N·Channel JFETs (continued)
Re !Yfs!
Re !Yos!
@
t
=
Min
Min
Max
Min
Max
1.0
-
-
30
0.5
4.0
1.5
7.0
200
200
6.0
2.0
5.0
200
30
0.1
8.0
3.0
18
100
400
5.0
1.0
4.0
400
25
1.0
4.0
4.0
10
801
100
3.01
0.81
4.01
400
30
0.5
3.0
1.0
8.0
200
200
6.0
2.0
2.5
100
30
-
8.0
4.0
20
400
5.0
1.0
4.0
400
25
2.0
6.0
8.0
20
2N5485
3.0
400
92
J305
3.01
400
72
2N3823
3.2
200
92
2N5486
3.5
400
100
92
(mA)
(V)
4.5
200
MPF4223
RG = 1K
f(MHz)
400
2.7
92
f
(MHz)
100
2.5
lOSS
(V)
(pF)
Max
400
Device
2N5246
VGSloffl
@
(pF)
Max
!/.,mho)
Max
92
V(BR)GSS
vlBRlGOO
NF
Crss
@
(mmho)
f
(MHz)
Min
Package
TO·
Ciss
(dB)
Max
72
2N4416
4.0
400
100
400
4.0
0.8
4.0
400
30
2.0
6.0
5.0
15
92
J300
4.5
0.001
200
0.001
5.5
1.1
-
-
25
-
1.0'
6.0
30
92
JF1033B
4.5
0.001
20
1.0
8.0
2.5
6.0
0.001
-
-
100
4.5
2.5
100
20
1.0
8.0
5.0
12
92
JF1033Y
4.5
0.001
-
2.5
JF1033S
-
-
92
-
-
2.5
100
20
1.0
8.0
10
20
72
2N4416A
4.0
400
100
400
4.0
0.8
4.0
400
30
2.0
6.0
5.0
15
92
2N5245
4.0
400
100
400
4.5
1.0
4.0
400
30
1.0
6.0
5.0
15
92
2N5247
4.0
400
150
400
4.5
1.0
4.0
400
30
1.5
8.0
8.0
24
92
J304
4.21
400
801
100
3.01
0.81
4.01
400
30
2.0
6.0
5.0
15
52
U308
10
0.001
150
100
5 .. 0
2.5
3.01
450
25
1.0
6.0
12
60
52
U309
10
0.001
150
100
5.0
2.5
3.0t
450
25
1.0
4.0
12
30
52
U310
10
0.001
150
100
5.0
2.5
3.0t
450
25
2.5
6.0
24
60
92
J308
121
100
2501
100
7.5
2.5
1.51
100
25
1.0
6.5
12
60
92
J309
121
100
2501
100
7.5
2.5
1.51
100
25
1.0
4.0
12
30
92
J310
121
100
2501
100
7.5
2.5
1.51
100
25
2.0
6.5
24
60
typical
'VGS(f)
Table 3. Switches and Choppers
P·Channel JFETs
rds onl
VGSloffl
lOSS
(V)
(mA)
@
Package
TO-
Device
(0)
Max
Min
Max
Clss
C rss
Ion
toff
(ns)
Max
Min
Max
(V)
Min
(pF)
Max
(pF)
Max
(ns)
Max
10
(pA)
V(BR)GSS
VIBRIGOO
92
MPF970
100
1.0
5.0
12
15
100
30
12
5.0
8.0
25
92
MPF971
250
1.0
1.0
7.0
2.0
80
30
12
5.0
10
120
72
2N3993
150
-
4.0
9.5
10
-
25
16
4.5
72
2N3994
300
1.0
5.5
2.0
-
25
16
4.5
-
5.0
10
2.0
100
30
-
-
3.0
6.0
7.0
60
30
-
92
J174
85
-
92
J175
125
-
92
J176
250
92
J177
300
-
1.0
4.0
2.0
25
30
-
0.8
2.5
1.5
20
30
-
-
-
25
50
25
50
30
-
-
-
-
-
20
16
37
20
10
20
10
4.0
8.0
20
30
10
4.0
8.0
20
40
10
4.0
8.0
20
N·Channel JFETs
18
MFE2012
10
-
3.0
10
100
18
MFE2011
15
1.0
1.0
10
40
18
2N4859A
25
2.0
6.0
50
92
MPF4859A
25
-
2.0
6.0
50
18
2N4856A
25
-
4.0
10
50
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-17
•
SMALL-SIGNAL FIELD-EFFECT TRANSISTORS (continued)
Table 3. Switches and Choppers (continued)
N-Channel JFETs (continued)
rds on)
VGS(ofl)
lOSS
(V)
(mA)
@
•
(0)
Package
To,.
Device
Max
92
MPF4856A
25
18
2N4856
26'
92
MPF4856
25
18
2N4859
25
92
MPF4859
25
10
(/LA)
Min
Max
Min
V(BR)GSS
V{BR)GOO
Max·
Ciss
C rss
ton
loff
(ns)
Max
(ns)
Max
(V)
(pF)
Min
Max
(pF)
Max
-
4.0
10
50
-
40
10
4.0
8.0
20
4.0
10
50
-
40
10
8.0
9.0
25
-
4.0
10
50
10
8.0
9.0
25
10
50
-
40
4.0
30
18
8.0
9.0
25
4.0
10
50
-
30
18
8.0
9.0
25
18
MFE2010
25
1.0
0.5
10
15
-
25
50
20
10
35
18
2N4391
30
1.0
4.0
10
50
150
40
14
3.5
15
20
92
MPF4391
. 30
1.0
4.0
10
60
130
20
10
3.5
15
20
92
2N5638
30
1.0
-
(12)
50
30
10
4.0
9.0
15
18
2N4091
30
1.0
5.0
10
30
40
16
5.0
25
40
30
1.0
-5.0
-10
30
-
-30
16
5.0
20
40
. 30
1.0
4.0
10
50
150
40
25
6.0
20
30
MPF3970
30
1.0
4.0
10
50
150
40
25
6.0
20
30
MPF4857A
40
2.0
6.0
20
100
40
10
3.5
10
40
2.0
6.0
20
100 .
30
10
3.5
10
40
2.0
6.0
20
100
30
10
3.5
10
40
92
MPF4091
30
1.0
5.0
10
30
92
J111
30
1.0
3.0
10
20
18
MFE2006
18
2N3970
92
92
40
16
5.0
25
40
35
101
5.01
13
35
18
2N4860A
40
92
MPF4860A
40
18
2N4857
40
-
2.0
6.0
20
100
40
18
8.0
10
50
18
2N4857A
40
-
2.0
6.0
20
100
40
18
8.0
10
50
-
2.0
6.0
20
100
40
18
8.0
10
50
2.0
6.0
20
100
30
18
8.0
10
50
40
-
2.0
6.0
20
100
30
18
8.0
10
50
2N4092
50
1.0
2.0
7.0
15
40
16
5.0
35
60
J112
50
1.0
1.0
5.0
5.0
-
35
101
5.01
131
351
18
MFE2005
50
1.0
-2.0
-8.0
15
-
-30
16
5.0
35
60
18
2N4392
60
1.0
2.0
5.0
25
75
40
14
3.5
15
35
92
MPF4857
40
18
2N4860
40
92
MPF4860
18
92
92
MPF4392
60
1.0
2.0
5.0
25
75
20
10
3.5
15
35
18
2N4858A
60
1.0
0.8
4.0
8.0
80
40
10
3.5
16
80
92
MPF485BA
60
1.0
0.8
4.0
8.0
80
40
10
3.5
16
80
2N4861A
60
-
0.8
4.0
8.0
80
30
10
3.5
16
80
92
MPF4861A
60
-
0.8
4.0
8.0
80
30
10
3.5
16
80
92
2N5639
60
.1.0
-
30
10
4.0
14
30
18
2N397.1
60
1.0
2.0
5.0
25
75
40
25
6.0
30
60
18
2N4858
60
-
0.8
4.0
8.0
80
40
18
8.0
20
100
92
MPF4858
60
-
0.8
4.0
8.0
80
40
18
8.0
20
100
18
2N4861
60
~
0.8
4.0
8.0
80
30
18
8.0
20
100
92
MPF4861
60
-
0.8
4.0
8.0
80
30
18
8.0
20
100
18
2N4093
80
1.0
1.0
5.0
80
-
40
16
5.0
60
80
18
MFE2004
80
1.0
-1.0
-6.0
8.0
-
-30
16
5.0
60
80
18'
2N4393
100
1.0
0.5
3.0
5.0
30
40
14
3.5
15
50
92
MPF4393
100
1.0
0.5
55
92
2N5640
100
1.0
-
18
2N3972
100
1.0
92
MPF3972
100
92
J113
100
.18
-
(8.0)1
. 25
3.0
5.0
30
20
10
3.5
15
(6.0)
5.0
-
30
10
4.0
18
45
0.5
3.0
5.0
30
40
25
6.0
80
100
1.0
0.5
3.0
5.0
30
40
25
6.0
80
100
1.0
0.5
3.0
2.0
-
35
101
5.01
131
351
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-18
SMALL-SIGNAL FIELD-EFFECT TRANSISTORS (continued)
Table 3. Switches and Choppers (continued)
N·Channel JFETs (continued)
rds on1
VGS(offl
lOSS
(V)
(rnA)
@
Package
TO-
I
~
Device
(n)
Max
10
(pA)
Min
Max
Min
Max
V(BR)GSS
V(BRIGOO
Ciss
Crss
Ion
loff
(V)
Min
(pF)
Max
(pF)
Max
(ns)
Max
(ns)
Max
92
2N555
150
-
-
1.0'
15
-
25
5.0
1.2
10
25
92
BF246
-
-
0.5
14
10
300
25
-
BF246A
35t
1.0
1.5
4.0
30
BO
25
-
-
92
92
BF246B
50t
1.0
3.0
7.0
60
140
25
92
BF246C
65t
1.0
5.5
12
110
250
25
-
92
J107
B.O
-
0.5
4.5
100
-
25
92
J10B
B.O
3.0
10
BO
J109
12
2.0
6.0
40
-
25
92
-
92
J110
1B
-
0.5
4.0
10
-
25
Iyplcal
25
-
'VGS(f)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-19
-
-
-
-
-
-
-
-
-
-
-
II
Single .Gate
MOSFETs
•
D
D
~
MOSFETs are available in either depletion/enhancement
or enhancement mode (in general, depletion/enhancement
devices are operated in the depletion mode and are referred
to as depletion devices). They are available in both N- and
P-channel, and both single gate and dual gate construction.
Some MOSFETs are also offered with input diode protection
which reduces the chance of damage from static charge in
handling.
D
]ili) ~
J
DDuaIGat:,~
G'm
.
Enhancement s
Table 4. Dual Gate
Enhancement S
Depletion 5
..~
These devices are especially suited for RF amplifier and
mixer applications in TV tuners, radio, etc. The Dual Gate
construction also allows easy AGe control with very low
power.
Depletion
s
N-CHANNELEnhancement S
N-Channel MOSFETs
Re !Vfs!
Re !Vos!
@
t
V(BR)GSS
ViBRiGOO
NF
e rss
lOSS
(mA)
VGS(oifl
(V)
@
@
(pF)
Max
(pF)
Max
(dB)
Max
RG = 1K
f(MHz)
Min
Min
Max
Min
-
4.0
0.02
3.5
200
10
0.5
2.0
5.0
20
-
-
0.05
3.5
200
±6.0
-0.2
-5.5
6.0
40
-
0.05
4.0
45
±6.0
-0.2
-5.5
6.0
40
0.001
-
-
4.31
0.03
4.5
200
±6.0
-0.2
-5.0
3.0
11
0.001
-
-
4.51
0.03
4.5
200
±6.0
-0.2
-5.0
6.0
30
-0.2
30
f
(mmho)
f
("mho)
Min
(MHz)
Max (MHz)
Package
TO-
Device
72
MFE521
10
0.001
-
72
MFE211
17
0.001
72
MFE212
17
0.001
72
MFE203
7.0
72
MFE201
8.0
=
elss
(V)
Max
72
MFE202
8.0
0.001
-
-
4.31
0.03
4.5
200
±6.0
-5.0
6.0
72
MFE120
8.0
0.001
-
-
7.0
0.023
5.0
105
±7.0
-
-4.0
2.0
18
72
MFE121
10
0.001
-
-
6.0
0.023
5.0
60
±7.0
-
-4.0
5.0
30
72
MFE122
8.0
0.001
-
-
7.0
0.023
5.0
200
±7.0
-
-4.0
2.0
20
72
MFE131
8.0
0.001
-
-
7.0
0.05
5.0
200
±7.0
-
-4.0
3.0
30
72
MFE204
10
0.001
-
0.03
5.0
400
25
-4.0
6.0
30
MFE130
8.0
0.001
-
7.0
0.05
5.0
105
±7.0
-
-4.0
3.0
30
72
MFE209
10
0.001
-
-
-
72
7.0
0.03
6.0
500
±7.0
-0.1
-4.0
5.0
30
72
MFE131
8.0
0.001
-
-
7.0
0.05
5.0
100
±7.0
-
-4.0
3.0
30
-0.2
typical
Table 5. Single Gate Low-Frequency/Low-Noise
P-Channel MOSFETs
Re !Vfs!
Package
TO-
Oevice
eiss
e rss
V(BR)OSS
VGS(th)
lOSS
(V)
(mA)
(mmho)
Min
("mho)
Max
(pF)
Max
(pF)
Max
(V)
Min
Min
Max
5.0
1.3
-35
-1.5
-3.2
-
-1.0
Min
Max
72
3N155
1.0
60
72
3N156
1.0
60
5.0
1.3
-35
-3.0
-5.0
-
-1.0
72
3N157
1.0
60
5.0
1.3
-35
-1.5
-3.2
-
-1.0
72
3N158A
1.0
60
5.0
1.3
-25
-2.0
-6.0
-
-20
18
MFE823
1.0
-
6.0
1.5
-50
-3.0
-5.0
-
-0.25
-7.0
N-Channel MOSFETs
18
2N3796
0.4
1.8
7.0
0.8
25
-
2.0
6.0
18
MFE825
0.5
-
4.0
0.7
20
-
-
1.0
25
72
2N4351
1.0
-
5.0
1.3
25
1.0
5.0
-
10
72
3N169
1.0
-
5.0
1.3
25
0.5
1.5
-
10
72
3N170
1.0
-
5.0
1.3
25
1.0
2.0
-
10
72
3N171
1.0
5.0
1.3
25
1.5
3.0
-
10
18
2N3797
1.5
-
8.0
0.8
25
-
-7.0
2.0
6.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-20
SMALL-SIGNAL FIELD-EFFECT TRANSISTORS (continued)
Table 6. Switches and Choppers
TO·226AA (TO·92)
N-CHANNEL
rOS(on)
VGS(th)
@
n
Device
Max
V(BR)OSS
Ciss
Crss
ton
toff
V
pF
Max
ns
Max
ns
Max
V
10
A
Min
Max
Min
pF
Max
VN0300L
1.2
1.0
O.B
2.5
30
100
25
30
30
2N7000
5.0
0.5
O.B
3.0
60
60
5.0
10
10
BS170
5.0
0.2
O.B
3.0
60
25 Typ
3.0 Typ
10
10
VN0610LL
5.0
0.5
O.B
2.5
60
60
5.0
10
10
VN1706L
6.0
0.5
0.8
2.0
170
125
20
16
30
VN2406L
6.0
0.5
0.8
2.0
240
125
20
16
30
BSS89
6.4
0.25
1.0
2.7
200
90
3.5
15
15
BS107A
6.4
0.25
1.0
3.0
200
70 Typ
6.0 Typ
15
15
MPF9200
6.4
0.25
1.0
4.0
200
90
10
15
15
2N7008
7.5
0.5
1.0
2.5
60
50
5.0
20
20
VN2222LL
7.5
0.5
0.6
2.5
60
60
5.0
10
10
BS10B
B.5
0.1
0.3
2.0
200
90
8.0
B.O Typ
10 Typ
VN1710L
10
0.5
0.8
2.0
170
125
20
16
50
VN2410L
10
0.5
0.8
2.0
240
125
20
16
50
MPF4150t
12
0.1
1.0
6.0
150
125
15
-
-
BS107
14
0.2
1.0
3.0
200
70 Typ
6.0 Typ
15
15
300
-
1.0
5.0
25
5.0
1.3
110
160
MPF480
80
0.01
0.5
3.0
80
8.0
7.0
20
20
MPF481
140
0.Q1
0.5
3.0
180
B.O
7.0
20
20
-1.0
-5.0
-25
5.0
1.3
110
160
15
2N4351·
P·CHANNEL
I 2N4352·
600
T()"226AE (1 WATT TO·92)
N-CHANNEL
MPF930
1.4
1.0
1.0
3.5
35
70
18
15
MPF960
1.7
1.0
1.0
3.5
60
70
18
15
15
MPF6659
1.8
1.0
0.8
2.0
35
50
10
5.0
5.0
MPF990
2.0
1.0
1.0
3.5
90
70
18
15
15
MPF6660
3.0
1.0
0.8
2.0
60
50
10
5.0
5.0
5.0
MPF6661
4.0
1.0
0.8
2.0
90
50
10
5.0
MPF910
5.0
0.5
0.8
2.5
60
50
10
10
10
MPF89
6.4
0.25
1.0
2.7
200
90
3.5
15
15
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
1-21
•
Table 6. Switches and Choppers (continued)
CASE 370-01 (FET DIP)
N-CHANNEL
'OS(on)
1[1
n
V(BR)OSS
10(on)
Voll
VGS = 1DV
VOS = 5.DV
Min
Amp
Ciss
Gts
mhos
Min
@
5.DV
Amp
1[1)25V
pF
Max
C,SS Id(on)
COSS
@25V @25V
pF
pF
ns
Max
Max
Max
I,
id(of!)
If
ns
Max
ns
Max
ns
Max
Oevlce
Max
mA
IRFD120
0.3
600
100
1.3
0.9
0.6
600
400
100
40
70
100
70
IRFD123
0.4
600
60
1.1
0.9
0.6
600
400
100
40
70
100
70
IRFD110
0.6
800
100
1.0
0.8
0.8
200
100
25
20
25
25
20
IRFD113
0.8
800
60
0.8
0.8
0.8
200
100
25
20
25
25
20
IRFD220
0.8
400
200
0.8
0.5
0.4
600
300
80
40
60
100
60
IRFD223
1.2
400
150
0.7
0.5
0.4
600
300
80
40
60
100
60
IRFD213
2.4
300
150
0.45
0.3
0.5
150
80
25
15
25
15
15
IRFD210
1.5
600
200
0.6
0.3
0.5
150
80
25
15
25
15
15
IRFD1Z0
2.4
250
100
0.5
0.25
0.25
70
30
10
20
25
25
20
IRFD1Z3
3.2
250
60
0.4
0.25
0.25
70
30
10
20
25
25
20
IRFD9120
0.6
800
100
1.0
0.8
0.8
450
350
100
50
100
100
100
IRFD9123
0.8
800
60
0.8
0.8
0.8
450
350
100
50
100
100
100
IRFD9110
1.2
300
100
0.7
0.6
0.3
250
100
35
30
60
40
40
IRFD9112
1.2
300
100
0.6
0.6
0.3
250
100
35
30
60
40
40
P·CHANNEL
TO-20SAD (TO-39)
N·CHANNEL
'OS(on)
n
V(BR)OSS
Clss
C,ss
Ion
loft
Max
V
Min
pF
Max
pF
Max
ns
Max
ns
Max
VGS(lh)
V
ea
Max
10
A
Min
VN0300B
1.2
10
0.8
2.5
30
100
25
30
30
MFE930
1.4
1.0
1.0
3.5
35
70
18
15
15
MFE960
1.7
1.0
1.0
3.5
60
70
18
15
15
2N6659
1.8
1.0
0.8
2.0
35
50
10
5.0
5.0
Oevlce
MFE990
2.0
1.0
1.0
3.5
90
70
18
15
15
2N6660
3.0
1.0
0.8
2.0
60
50
10
5.0
5.0
2N6661
4.0
1.0
0.8
2.0
90
50
10
5.0
5.0
MFE910
5.0
0.5
0.8
2.5
60
50
10
10
10
VN1706B
6.0
0.5
0.8
2.0
170
125
20
16
30
VN2406B
6.0
0.5
0.8
2.0
240
125
20
16
30
MFE9200tt
6.4
0.25
1.0
4.0
200
90
10
15
15
VN1710B
10
0.5
0.8
2.0
170
125
20
16
57
VN2410B
10
0.5
0.8
2.0
240
125
20
16
57
ttTO-18 -
Case Style 12
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1·22
SMALL-SIGNAL FIELD-EFFECT TRANSISTORS (continued)
Table 6. Switches and Choppers (continued)
TO-20SAF (TO·72)
N-CHANNEL
rOS(OR)
VGS(lh)
V
@l
V(BR)OSS
Ciss
erss
Ion
loll
pF
Max
pF
Max
ns
Max
ns
Max
0
Max
10
A
Min
Max
V
Min
2N6796
0.18
8.0
2.0
4.0
100
900
150
105
85
IRFF130
0.18
8.0
2.0
4.0
100
800
150
200
250
Oevice
IRFF133
0.25
7.0
2.0
4.0
60
800
150
200
250
2N6788
0.3
3.5
2.0
4.0
100
600
100
110
110
IRFF120
0.3
6.0
2.0
4.0
100
600
100
110
170
2N6798
0.4
5.5
2.0
4.0
200
900
150
80
90
IRFF123
0.4
5.0
2.0
4.0
60
600
100
110
170
IRFF230
0.4
5.5
2.0
4.0
200
150
150
80
90
2N6782
0.6
3.5
2.0
4.0
100
200
25
40
45
IRFF110
0.6
3.5
2.0
4.0
100
200
25
45
45
IRFF233
0.6
4.5
2.0
4.0
150
800
150
80
90
100
2N6790
0.8
3.5
2.0
4.0
200
600
80
90
IRFF113
0.8
3.0
2.0
4.0
60
200
25
45
45
IRFF220
0.8
3.5
2.0
4.0
200
600
80
100
160
2N6800
1.0
3.0
2.0
4.0
400
900
80
65
90
IRFF330
1.0
3.5
2.0
4.0
400
900
80
65
90
IRFF223
1.2
3.0
2.0
4.0
150
600
80
100
160
2N6784
1.5
2.25
2.0
4.0
200
200
25
35
50
2N6802
1.5
3.5
2.0
4.0
500
900
60
60
85
IRFF210
1.5
2.2
2.0
4.0
200
150
25
40
30
IRFF333
1.5
3.0
2.0
4.0
350
900
80
65
90
IRFF430
1.5
2.75
2.0
4.0
500
800
60
60
85
IRFF313
1.5
1.15
2.0
4.0
350
150
15
30
25
IRFF433
2.0
2.25
2.0
4.0
450
800
60
60
85
IRFF213
2.4
1.8
2.0
4.0
150
150
25
40
30
IRFF310
3.6
1.35
2.0
4.0
400
150
15
30
25
P-CHANNEL
~3______~__0_.8__- l__-_ _3._5__L -__2._0__~__4_.0__- l___-_60__- L__4_5_0__~__1_00__- l___15_1__- L__2_0_0__~
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
1-23
Small-Signal
Surface Mount Devices
•
CASE 31S-03
TO-236AB
SOT-23
CASE 751 B-03
SO-16
Bipolar Transistors -
SOT-23
Table 1. General-Purpose
Pinout: l-Base, 2-Emitter, 3-Collector
Devices are listed in order of descending breakdown voltage
hFE
Device
tr
Marking
V(BR)CEO
Min
Max
@lc(mA)
Min (MHz)
BCS46AL
BCS46BL
BSSS2BL
BC817-16L
BCS17-25L
1A
1B
CH
6A
6B
65
65
60
45
45
110
200
40
100
160
220
450
120
250
400
2.0
2.0
150
100
100
100
100
100
200
200
BCS17-40L
BCS47AL
BCS47BL
BC847CL
BCX70KL
6C
1E
1F
1G
AK
45
45
45
45
45
250
110
200
420
100
600
220
450
SOD
100
2.0
2.0
2.0
50
200
100
100
100
125
BCX70JL
BCW72L
BCX70HL
BCX70GL
MMBT930L
AJ
K2
AH
AG
1X
45
45
45
45
45
90
200
70
60
150
-
50
2.0
50
50
0.5
125
BCW71L
BCX19L
MMBC1623L7L
MMBC1623L6L
MMBC1623L5L
K1
U1
L7
L6
L5
45
45
40
40
40
110
40
300
200
135
BSS79CL
MMBT2222AL
MMBC1623L4L
MMBC1623L3L
BSS79BL
CF
1P
L4
L3
CE
40
40
40
40
40
100
40
90
60
40
300
MMBTA20L
MMBT4123L
MMBC162207L
MMBC162206L
BCW60AL
1C
5B
07
06
AA
40
30
35
35
32
40
25
300
200
60
400
BCW600L
BCW65AL
BCW60CL
BCW60BL
BCS4SAL
AD
EA
AC
AB
1J
32
32
32
32
30
100
100
90
70
110
BCS4SBL
BCS4SCL
MMBC1 009F1 L
MMBC1009F3L
BC81S-16L
1K
1L
F1
F3
6E
30
30
25
25
25
BC81S-25L
BC81S-40L
BCX20L
BCW33L
BCW31L
6F
6G
U2
03
01
25
25
25
20
20
-
450
220
220
125
125
30
-
2.0
500
1.0
1.0
1.0
200
200
200
200
150
500
1.0
1.0
150
250
200
200
200
250
5.0
50
0.5
0.5
50
125
250
100
100
125
220
50
100
50
50
2.0
125
100
125
125
100
200
420
30
60
100
450
SOO
60
120
250
2.0
2.0
0.5
0.5
100
100
100
150
150
200
160
250
100
420
110
400
600
600
100
100
100
2.0
2.0
200
200
600
400
270
1S0
120
120
600
400
250
-
220
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-24
-
-
SURFACE MOUNT BIPOLAR DEVICES (continued)
Table 1. General-Purpose (continued)
Device
PNP
I
MMBT8599L
BC856AL
BC856BL
MMBT8598L
BSS82CL
2W
3A
3B
2K
CM
BO
65
65
60
60
75
125
220
75
100
MMBA811C8L
BC807-16L
BC807-25L
BC807-40L
BC857AL
C8
5A
5B
5C
3E
45
45
45
45
45
BC857BL
BC857CL
BCX71KL
MMBABllC7L
BCX71JL
3F
3G
BK
C7
BJ
BCW70L
MMBA811C6L
BCW68GL
MMBABllC5L
BCW69L
-
300
100
2.0
2.0
100
150
150
100
100
150
100
450
100
160
250
125
900
250
400
600
250
5.0
100
100
100
2.0
50
200
200
200
100
45
45
45
45
45
220
420
100
300
100
475
BOO
2.0
2.0
50
5.0
50
100
100
H2
C6
DG
C5
Hl
45
45
45
45
45
215
200
60
135
120
500
400
45
45
45
40
40
60
35
100
300
200
-
BCW68FL
BCX17L
MMBA812M7L
MMBA812M6L
BG
DF
Tl
M7
M6
MMBA812M5L
MMBAB12M4L
MMBAB12M3L
BSS80BL
BSS80CL
M5
M4
M3
CH
CJ
40
MMBTA70L
BCW61DL
BCW61CL
BCW67CL
BCW61BL
I BCX71GL
250
475
-
600
270
260
2.0
5.0
500
5.0
2.0
50
50
100
50
-
600
600
400
50
500
100
1.0
1.0
100
100
150
150
40
40
40
135
90
60
40
100
270
lBO
120
120
30
1.0
1.0
1.0
150
150
150
150
150
200
200
2C
BD
BC
EC
BB
40
32
32
32
32
40
110
100
100
BO
400
5.0
50
50
500
50
125
BCW67BL
BCW61AL
BCW67AL
BC808-16L
BC808-25L
DB
BA
DA
5E
5F
32
32
32
25
25
60
60
35
100
160
500
50
500
100
100
100
100
200
200
BC808-40L
BC858AL
BC858BL
BC858CL
MMBT4125L
5G
3J
3K
3L
ZD
25
30
30
30
30
250
125
220
420
25
600
250
475
BOO
100
2.0
2.0
2.0
50
200
100
100
100
200
BCX18L
MMBTA55L
BCW30L
BCW29L
T2
AL
C2
Cl
25
25
20
20
40
30
215
120
-
40
-
-
-
-
250
400
-
500
260
500
500
2.0
2.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-25
100
-
100
-
•
Table 2. Switching Transistors
Pinout: 1-Base, 2-Emltter, 3-Collector
Device
NPN
•
MMBT2369L
BSV52L
MMBT2222L
MMBT2222AL
MMBT4401L
MMBT3903L
MMBT3904L
1J
B2.
1B
1P
2X
1Y
1A
12
12
35
35
35
70
70
18
18
385
385
255
225
250
15
12
30
40
40
40
40
20
40
30
40
40
15
30
2J
2T
2B
2F
2A
25
35
45
45
70
35
225
100
100
300
12
40
40
60
40
20
90
30
50
100
120
-
-
-
100
10
500
500
500
100
100
400
250
200
250
250
200
50
1.0
500
500
10
500
150
200
200
250
PNP
MMBT3640L
MMBT4403L
MMBT2907L
MMBT2907AL
MMBT3906L
180
-
300
Table 3. VHF/UHF Amplifiers, Mixers, Oscillators
Pinout: 1-Base, 2-Emitter, 3-Collector
Device
Marking
Cob
Max (pF)
Min (GHz)
@ IC (rnA)
0.65
0.6
0.6
0.6
0.6
0.4
4.0
2.0
2.0
2.0
4.0
8.0
0.6
5.0
NPN
MMBTH10L
MMBC132103L
MMBC132104L
MMBC132105L
MMBT918L
MMBTH24L
3E
03
04
05
3B
3A
30
0.7,
1.8
1.8
1.8
1.7
0.36
3D
20
0.85
25
25
25
25
15
PNP
I MMBTH81L
Table 4. Choppers
Pinout: 1-Base, 2-Emitter, 3-Collector
Device
PNP
MMBT404L
MMBT404AL
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-26
SURFACE MOUNT BIPOLAR DEVICES (continued)
Table 5. Darlingtons
Device
•
MMBTA14L
MMBT6427L
MMBTA13L
MMBTA64L
MMBTA63L
Table 6. Low-Noise Transistors
NPN
MMBT5088L
MMBT5089L
MMBT2484L
MMBT6428L
MMBT6429L
BC849BL
BC849CL
BC850BL
BC850CL
300
400
-
-
800
250
500
200
420
200
420
450
800
450
800
10
1R
1U
1K
1L
2B
2C
2F
2G
1.0
1.0
3.0
3.0
3.0
4.0'
4.0'
4.0'
4.0'
30
30
60
50
45
30
30
45
45
2P
2Q
4A
4B
4C
4E
4F
4G
1.0
1.0
4.0'
4.0'
A.O·
4.0'
4.0'
4.0'
50
50
30
30
30
45
45
45
150
250
100
200
420
100
200
420
-
10
10
10
10
10
2.0
2.0
2.0
2.0
50
50
15
100
100
100
100
100
100
10
10
2.0
2.0
2.0
2.0
2.0
2.0
40
40
100
100
100
100
100
100
PNP
MMBT5086L
MMBT5087L
BC859AL
BC859BL
BC859CL
BC860AL
BC860BL
BC860CL
220
450
800
220
450
800
Max
Table 7. High-Voltage Transistors
NPN
-
MMBT6517L
MMBTA42L
MMBTA43L
MMBC1654N5L
MMBC1654N6L
1E
N5
N6
350
300
200
160
160
15
40
40
50
100
MMBC1654N7L
MMBT5550L
MMBT5551L
N7
1F
G1
160
160
160
150
30
30
330
2Z
2D
2E
2L
350
300
200
150
15
25
25
50
1Z
10
100
30
30
15
15
40
50
50
120
120
-
15
50
50
120
100
100
-
100
30
30
50
40
50
50
100
130
220
PNP
MMBT6520L
MMBTA92L
MMBTA93L
MMBT5401L
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-27
Table 8. Drivers
Device
•
MMBTA06L
BSS64L
MMBTA05L
BSS63L
MMBTA55L
MMBTA56L
Table 9. RF Transistors
Pinout: 1-Base, 2-Emitter, 3-Collector
MMBR571L
MMBR911L
MMBR930L
BFR92L
BFR93L
7X
7P
7C
P1
R1
8.0
6.0
5.5
3.0
3.0
50
30
30
14
30
10
10
5.0
10
5.0
2.0
2.0
1.9
3.0
2.5
5.0
10
2.0
3.0
2.0
6.0
10
5.0
1.5
5.0
16.5'
17'
11
MMBR931L
MMBR2060L
MMBR5179L
MMBR920L
MMBR901L
70
7E
7H
7B
7A
3.5
2.5
1.5
4.5
4.0
1.0
20
5.0
14
15
1.0
1.0
6.0
10
10
4.3
2.0
4.0
2.4
1.9
0.5
1.5
1.5
2.0
5.0
MMBR941L
MMBR951L
MMBR5031L
MMBR2857L
BFS17L
7Y
7Z
7G
7K
E1
8.0
7.5
2.0
1.2
1.0
15
30
5.0
4.0
2.0
6.0
6.0
6.0
10
5.0
1.7
1.7
1.9
3.0
5.0
5.0
5.0
1.0
1.5
2.0
5.0
10
30
6.0
5.0
5.0
-
-
-
500
500
500
500
30
1.0
10
6.0
10
6.0
10
13
11
15
16
1.0
20
5.0
2.0
5.0
1.0
10
6.0
10
6.0
1000
450
450
500
1000
6.0
6.0
6.0
6.0
5.0
12.5
12.5
17
12.5
5.0
5.0
1.0
1.5
6.0
6.0
6.0
6.0
2000
2000
450
450
30
-
-
-
PNP
Table 10. Bipolar Quad Transistors -
50-16
IT
hFE
Device
MMPQ2222
MMPQ2222A
MMPQ2369
MMPQ2907
MMPQ2907A
MMPQ3467
MMPQ3725
MMPQ3725A
MMPQ3762
V(BR)CEO
V(BR)CBO
Min
@ICmA
MHz Min
@IClmA)
Package
40
40
15
40
50
40
40
50
40
60
75
40
40
60
40
60
70
40
30
40
20
30
50
20
25
30
20
300
500
100
300
500
500
500
500
1000
350:
350'
450
350'
350'
125
250
200
150
20
20
10
50
50
50
50
50
50
SO-16
SO-16
SO-16
S0-16
SO-16
SO-16
SO-16
SO-16
SO-16
'Typ
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-28
I,.
SURFACE MOUNT DEVICES (continued)
Field-Effect Transistors
SOT-23
Table 11. RF JFETs
Pinout: 1-Drain, 2·Source, 3-Gate
Device
N-CHANNEL
MMBFU310L
MMBF112L
MMBF5484L
MMBF5486L
MMBF4416L
MMBFJ310L
6e
TV
6B
6H
6A
6T
..Max
1.5
3.0"
2.0
2.0
2.0
4.0
100
100
100
450
10
1.0
3.0
4.0
4.5
8.0
18
7.5
6.0
8.0
7.5
18
10
10
15
15
15
10
-25
-25
-25
-25
-30
-25
1.0
4.0
--15
1.0
5.0
1.0
-
Table 12. General-Purpose JFETs
Pinout: 1-Drain, 2-Source, 3-Gate
Device
N-CHANNEL
MMBF5457L
MMBF5459L
P-CHANNEL
I MMBF5460L
6E
-40
Table 13. Choppers/Switches, JFETs
N-CHANNEL
MMBF4391L
BSR56L
MMBF4860L
BSR57L
MMBF4392L
BSR58L
MMBF4393L
6J
M4
6F
M5
6K
M6
6G
30
25
40
40
60
60
100
20
25
50
50
35
100
50
30
40
30
40
30
40
30
-4.0
-4.0
-2.0
-2.0
-2.0
-0.8
-0.5
-10
-10
-6.0
-6.0
-5.0
-4.0
-3.0
Table 14. TMOS FETs
Pinout: 1-Gate, 2-Source, 3-Drain
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-29
50
50
20
20
25
8.0
5.0
150
100
100
75
80
30
•
Table 15. Zener Diodes
leaded 1N5226 series. The BCX84 series is identical to popular European series SOT-23's.
Zener Diodes are offered in two popular series. The
MMBZ5226 has the same specifications as the standard axial
Pinout· 1-Anode, 2-NC, 3-Cathode (VF = 09 V Max @ IF = 10 mA for all types)
•
Device
MMBZ5226BL
MMBZ5227BL
MMBZ5228BL
MMBZ5229BL
MMBZ5230BL
MMBZ5231Bi,.
MMBZ5232BL
MMBZ5233BL
MMBZ5234BL
MMBZ5235BL
MMBZ5236BL
MMBZ5237BL
MMBZ523BBL
MMBZ5239BL
MMBZ5240BL
MMBZ5241BL
MMBZ5242BL
MMBZ5243BL
MMBZ5244BL
MMBZ5245BL
MMBZ5246BL
MMBZ5247BL
MMBZ5248BL
MMBZ5249BL
MMBZ5250BL
MMBZ5251BL
MMBZ5252BL
MMBZ5253BL
MMBZ5254BL
MMBZ5255BL
MMBZ5256BL
MMBZ525iBL
Marking
Test
Current
IZT
mA
Zener
Voltage
VZ(±5%)
Nominal
ZZK
IZ = 0.25 mA
Max
ZZT
IZ = IZT
@10%Mod
Max
BA
BB
BC
BD
8E
8F
8G
BH
8J
8K
BL
8M
8N
8P
BO
BR
8S
BT
BU
BV
8W
8X
8Y
BZ
81A
81B
81C
810
81E
81F
81G
81H
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
B.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.B
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
2B
24
23
22
19
17
11
7.0
7.0
5.0
6.0
B.O
8.0
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
o
Max
IR
p.A
o
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
@
VR
V
1
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
B.O
8.4
9.1
9.9
10
11
12
13
14
14
15
17
lB
19
21
21
23
25
Pinout: 1-Anode, 2-NC, 3-Cathode
VZl
Volts
VZ2
Volts
VZ3
Volts
IZ
mA
@
Zzr
(ohms) (max)
MaxlR
Marking
Min
Max
Min
Max
Min
Max
IZl
IZ2
IZ3
@'VR
(Volts)
IR (p.A)
@IZ=IZ1
BZX84C3V3L
BZXB4C4V3L
BZX84C4V7L
BZXB4C5V1L
BZX84C5V6L
Z14
W9
Zl
Z2
Z3
3.1
4.0
4.4
4.8
5.2
3.5
4.6
5.0
5.4
6.0
2.3
3.3
3.7
4.2
4.8
2.9
4
4.7
5.3
6.0
3.6
4.4
4.5
5.0
5.2
4.2
5.1
5.4
5.9
6.3
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
1.0
1.0
2.0
2.0
2.0
5.0
3.0
2.0
1.0
95
90
BO
60
40
BZX84C6V2L
BZX84C6V8L
BZX84C7V5L
BZX84C8V2L
BZX84C9V1L
Z4
Z5
Z6
Z7
Z8
5.8
6.4
7.0
7.7
8.5
6.6
7.2
7.9
8.7
9.6
5.6
6.3
6.9
7.6
8.4
6.6
7.2
7.9
8.7
9.6
5.8
6.4
7.0
7.7
8.5
6.8
7.4
B.O
B.O
9.7
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
4.0
4.0
5.0
5.0
6.0
3.0
2.0
1.0
0.7
0.5
10
15
15
15
15
BZX84Cl0L
BZX84CllL
BZX84C12L
BZX84C13L
BZX84C15L
Z9
Yl
Y2
Y3
Y4
9.4
10.4
11.4
12.4
13.8
10.6
11.6
12.7
14.1
15.6
9.3
10.2
11.2
12.3
13.7
10.6
11.6
12.7
14
15.5
9.4
10.4
11.4
12.5
13.9
10.7
11.8
12.9
14.2
15.7
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
7.0
B.O
8.0
B.O
10.5
0.2
0.1
0.1
0.05
20
20
25
30
30
BZX84C16L
BZX84C18L
BZX84C20L
BZX84C22L
BZX84C24L
Y5
Y6
Y7
Y8
Y9
15.3
16.8
18.8
20.8
22.8
17.1
19.1
21.2
23.3
25.6
15.2
15.7
18.7
20.7
22.7
17
19
21.1
23.2
25.5
15.4
16.9
18.9
20.9
22.9
17.2
19.2
21.4
23.4
25.7
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
11.2
12.6
14
15.4
16.8
0.05
0.05
0.05
0.05
0.05
40
45'
55
55
70
BZX84C27L
BZX84C30L
BZXB4C33L
Yl0
Yll
Y12
25.1
28
31
28.9
32
35
25
27.8
28.9
32
35
25.2
28.1
31.1
29.3
32.4
35.4
2.0
0.5
0.5
0.5
10
10
10
18.9
21
23.1
0.05
0.05
0.05
80(1)
Device
NOTE: (1) rd,ff (0 IZ
~
30.8
2.0
2.0
2.0 mA
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
1-30
3.0
0.1
BO(l)
80(1)
Multiple Devices
14
1'~
~E607-04
,- •
CERAMIC
Bipolar Devices
The trend in electronic system design is toward the use of
integrated circuits - to reduce component cost, assembly
cost, and equipment cost. But ICs still aren't all things to all
people, and for those circuit designs where ICs are not available, there is a noticeable swing towards the use of multiple
devices."
Motorola is reacting to this expanding market requirement
by making available a large selection of quad, dual, Darlington
transistors, and diode arrays for off-the-shelf delivery. The
chips used in the Quad and Dual transistors are those that
have emerged as the most popular ones for discrete transistor
applications. But even beyond that, Motorola offers its entire
vast repertoire of discrete small-signal transistors for multipledevice packaging. For special applications where the devices
in these tables might not quite fit the design requirements,
special configurations can be supplied with quick turnaround
time and at low premiums.
1
CASE 632·08
CERAMIC
CASE 648-08
PLASTIC
CASE 646-06
PLASTIC
16'
1
CASE 7518-03
PLASTIC
~1
6
CASE 610A·04
CERAMIC
Specification Tables
The following short form specifications include Quad and Dual bipolar transistors listed in alphanumeric order. Some columns
denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification.
This applies to Table 1 and 2 of this section only.
KEY
TYPE NO.
10
Po
Watts
One
Die
Only
I
VeE
Volts
~
I
ril
IC
Amp hFE@ IC "c
Max Min I
"
1,MHz
Min
Units lor test current'
A-ampere
ldentllicabon Code
1st Letter: Polanty
m-mA
u-f-LA
C- both types In multiple deVice
N-NPN
P-PNP
2nd Letter: Use
A- General Purpose Amplifier
E- Low NOIse AudiO Amplifier
F- Low NOIse RF Amplifier
G- General Purpose Amphfler
and Switch
H- Tuned RF IF Amplll~r
M- Dlfferennal Amplifier
S- High Speed SWl~h
D-Darllngton
"
"
G~ - Power Gam
N -NoISe Figure
Common-emitter
DC Current Gain
Aiphanumencllslll'lg
type numbers
Gp NF @ f
hFE1 ~vBE
dB dB
- - mV Min
Max
hFE2 Max
VCE I
toll (sat)CcI C & IC c PACKAGE
Cob ton
pF
ns
ns
TO-I Case
VOltsl,1
Max Max Max Max B
No. No.
r-
VCE(sat) -
Current-Gam-BandWIdth
Product
JEDEC Outline
Motorola Package
rest Frequency
Outline
AUD -10-15 kHz
Frequency Units:
H-Hertz
M-MHz
K-kHz
G-GHz
Col/ector-EmItter Saturation
Voltage
Ie - Test Current
Current Umts: u - p.A
m-mA
A-Amp
Continuous (DC) Collector Current
Power Dlsslpallon specified at 25"C Smgle
die rating.
Ref. POint· A- Ambient temperature
C- Case temperature
Rated Minimum Collector-Emitter Voltage
Subscript letter Identifies base termmatlon
lIsted below In order of preference.
SUBSCRIPT:
0- VCEO' open
hFEllhFE2 - Current Gain Rallo
VBE - Dillerentlal Base Voltage IVBEI - VBE21.
Dillerenllal Amplifiers
ton - tum-on time
toff - tum-off time
Output Capacltanre, common·bas•. Shown w!hout dlStmcbon:
Ccb - CoIlectol·Base Gapac"nce
ere - Common-Emitter Reverse Transfer Capacitance
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-31
/
MULTIPLE DEVICES (continued)
Table 1. Bipolar Transistors -
Quads
~~
hFEl AVBE
- - mV
hFE2 Max Min
TYPE NO.
10
Po
Watts
One
Ole
Only
IC
Amp
Max
VCEVolts
60
60
50
50
15
30
0
0
0
0
A
A
A
A
A
A
0.75
0.75
0.75
0.65
0.65
0.65
NA
NA
NS
NA
NA
PA
MPQ2907
MPQ2907A
MPQ3467
MPQ3546
MPQ3725t
MPQ3725A
2N6987
2N6988
2N6989
2N6990
MHQ918
MHQ2222
PA
PA
NA
NA
NA
NA
0.525
0.525
0.525
0.525
0.65
0.65
A
A
A
A
MHQ2369
MHQ2906
MHQ2907t
MHQ3467t
MHQ3546
MHQ3798
NS
PG
PG
PS
PS
PA
0.5
0.65
0.65
0.9
0.5
0.5
MHQ4002A
MHQ4013tt
MHQ4014
MHQ6002
MPQ1000
MPQ2221
NS
NS
NS
CA
NA
NA
MPQ2222
MPQ2222A
MPQ2369
MPQ2483
MPQ2484
MPQ2906
IT
MHz
Min
Typ'
Cob
pF
Max
Typ'
m
m
m
m
m
m
250
250
250
250
600
200
8.0
8.0
8.0
8.0
2.0
8.0
hFE@IC
Min
500
500
500
500
3.0
300
ton
ns
Max
Typ"
toft
ns
Max
Typ"
45
45
35
35
300
300
300
300
-
-
0
0.6
0.6
0.8
0.8
0.05
0.5
50
50
30
30
20
30
15
40
40
40
12
40
0
0
0
0
0
0
0.5
0.6
0.6
1.0
0.2
0.05
40
40
100
20
30
150
10m
150 m
150 m
500 m
10m
0.1 m
450
200
200
125
600
60
4.0 9.0"
8.0
30"
8.0
30'
25
40
6.0 0.15'
4.0
A
A
A
A
A
A
45
40
45
30
20
30
0
0
0
0
0
0
1.5
1.5
1.5
0.5
0.5
0.5
30
35
35
100
50
40
500 m
500 m
500 m
150 m
10m
150 m
200
200
200
200
175
200
10
10
10
8.0
8.0
8.0
0.65
0.65
0.5
0.625
0.625
0.65
A
A
A
A
A
A
30
30
15
40
40
40
0
0
0
0
0
0
0.5
0.5
0.5
0.05
0.05
0.6
100
100
40
150
300
40
150 m
150 m
10 m
1.0m
1.0m
150 m
200
200
450
50
50
200
8.0
8.0
4.0
8.0
PA
PA
PS
PA
NS
NS
0.65
0.65
0.75
0.5
1.0
1.0
A
A
A
A
A
A
40
60
40
12
40
50
0
0
0
0
0
0
0.6
0.6
1.0
0.2
1.0
1.0
100
100
20
30
25
30
150 m
150 m
500 m
10m
500 m
500m
200
200
125
600
250
200
8.0
8.0
25
6.0
10
10
MPQ3762
MPQ3798
MPQ3799
MPQ3904
MPQ3906
MPQ6001
PS
PA
PA
NG
PG
CG
0.75
0.625
0.625
0.5
0.5
0.65
A
A
A
A
A
A
40
40
60
40
40
30
0
0
0
0
0
0
1.5
0.05
0.05
0.2
0.2
0.5
35
150
300
75
75
40
150 m
0.1 m
0.1 m
10 m
10m
150 m
150
60
50
250
200
200
15
4.0
4.0
4.0
4.5
8.0
MPQ6002
MPQ6100
MPQ6100A
MPQ6426
MPQ6427
MPQ6501
CG
CA
CA
NO
NO
CG
0.65
0.5
0.5
0.5
0.5
0.65
A
A
A
A
A
A
30
40
45
30
40
30
0
0
0
0
0
0
0.5
0.05
0.05
0.5
0.5
0.5
100
75
150
10K
10K
40
150 m
1.0m
1.0m
100 m
100 m
150 m
200
50
50
125
125
200
MPQ6502
MPQ6600
MPa6600A
MPQ6700
MPQ6842
MPQ7041
CG
CA
CA
CA
CA
NA
0.65
0.5
0.5
0.5
0.75
0.75
A
A
A
A
A
A
30
40
45
40
40
150
0
0
0
0
0
0
0.5
0.05
0.05
0.2
0.5
0.5
100
75
150
70
70
25
150 m
1.0m
1.0m
10 m
10 m
1.0 m
MPQ7042
MPQ7043
MPQ7091
MPQ7092
MPQ7093
MQ918
NA
NA
PA
PA
PA
NA
0.75
0.75
0.75
0.75
0.75
0.55
A
A
A
A
A
A
200
250
150
200
250
15
0
0
0
0
0
0
0.5
0.5
0.5
'0.5
0.5
0.05
25
25
25
25
35
50
MQ982
PA
0.4 A
50
0
0.6
40
VCE
NF@ f
dB
Max
Typ'
IC
(sat)@_
Volts
Max
IC'
la
PACKAGE
TOCase
No.
No.
004
004
0.3
'0.3
004
0.4
10
10
10
10
10
10
150m
150m
150m
150m
10m
15m
116
116
632
607
632
607
632
632
15'
100"
100'
90
25"
0.25
0.4
0.4
0.5
0.25
10
10
10
10
10
3.0'
10m
150m
150m
500m
10m
AUO
116
116
116
116
116
116
632
632
632
632
632
632
40
75
35
60
35
60
30" 225"
10
10
10
10
10
10
500m
500m
500m
150m
150m
150m
116
116
116
116
25" 250"
0.52
0.52
0.52
004
0.5
004
632
632
632
632
646
646
25" 250"
25" 250"
9.0"
15"
004
0.4
0.25
30"
100"
0.4
10
10
10
3.0'
2.0'
10
150m
150m
10m
AUO
AUO
150m
646
646
646
646
646
646
30"
30"
40
15"
35
3.5
100"
100"
90
25"
60
60
004
004
0.5
0.25
0045
0045
10
10
10
10
10
150m
150m
500m
10 m
500m
500m
646
646
646
646
646
646
50
120
0.55
10
3.0'
2.0'
10
10
10
500m
AUO
AUO
10m
10m
150m
646
10
4.0'
4.0'
10
10
10
150m
AUO
AUO
100m
100m
150m
646
646
646
646
646
646
10
4.0'
4.0
4.0
10
10
150m
AUO
1.0m
1.0m
0.5m
20m
646
646
646
646
646
646
25" 250'
646
646
646
646
646
37" 136'
43" 155"
30" 225"
0.2
0.25
004
8.0
4.0
4.0
8.0
8.0
8.0
30" 225"
004
200
50
50
200
300
50
8.0
4.0
4.0
4.5
4.5
5.0
30"
1.0m
1.0m
1.0 m
1.0 m
10m
3.0 m
50
50
50
50
50
600
5.0
5.0
5.0
5.0
5.0
1.7
0.5
0.5
0.5
0.5
0.5
10
10
10
10
10
6.0
20m
20m
20m
20m
20m
60M
646
646
646
646
646
607
150 m
200
8.0
0.5
10
150m
607
-
-
30" 225"
1.5
1.5
004
225"
004
-
45
-
150
0.25
0.25
0.15
0.5
tH, HX, and HXV Suffixes also available.
ttMHQ4013 IS electrically equivalent to MHQ3725.
Some columns show 2 different types of data indicated by either bOld or italic typefaces. See key and headings.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-32
Table 1. Bipolar Transistors -
Quads (continued)
NF@ f
dB
Max
Typ'
Ie
VeE
(sat)@_
Ie
Volts
la
Max
hFEl AVBE G p
dB
mV
hFE2 Max Min
-TYPE NO.
10
Po
Watts
One
Die
Only
IC
Amp
Max
VCEVolts
IT
hFE@IC
Min
MHz
Min
Typ'
Cob
pF
Max
Typ'
ton
ns
Max
toft
ns
Max
Typ"
Typ"
MQ1120
MQl129
MQ221B
MQ221BA
MQ2219
MQ2219A
PA
NA
NA
NA
NA
NA
0.4
0.4
0.4
0.6
0.6
0.4
A
A
A
A
A
A
30
30
30
40
30
30
0
0
0
0
0
0
0.5
0.5
0.5
0.5
0.5
0.5
50
100
40
40
100
100
10m
10m
150 m
150 m
150m
150 m
200
200
200
200
200
200
B.O
B.O
B.O
B.O
B.O
B.O
MQ2369
MQ24B4
MQ2905A
MQ3251
MQ3467
MQ3725
NS
NE
PG
PA
PS
NS
0.4
0.4
0.4
0.4
0.4
0.4
A
A
A
A
A
A
15
60
60
40
40
40
0
0
0
0
0
0
0.5
0.03
0.6
0.05
1.0
1.0
40
100
100
100
20
50
10m 500
10 u 260"
150 m 300
10m 300
500 m 150
100 m 200
4.0
6.0
8.0
6.0
20
10
MQ3762
MQ3798
MQ6001
MQ700i
MQ7003
MQ7007
PS
PA
CG
PA
NA
PA
0.4
0.4
0.4
0.4
0.4
0.4
A
A
A
A
A
A
40
60
30
30
40
40
0
0
0
0
0
0
1.5
0.05
0.5
0.6
0.05
0.2
20
150
40
70
50
30
1.0 A 150
100 u 450"
150 m 200
1.0m 200
10m 200
1.0m 300
20
4.0
8.0
8.0
6.0
8.0
40
110
60
350
MQ7021
2N5146
CG
PA
0.4 A
0.4 A
40
40
0
0
0.05
1.5
50
20
10m
1.0 A
6.0
20
28"
40
72"
110
200
150
PACKAGE
TOCase
No.
No.
0.1
0.15
0.4
0.4
0.3
0.3
10
10
10
10
10
10
10m
10m
150m
150m
150m
150m
607
607
607
607
607
607
10m
AUO
150m
10m
500m
100m
607
607
607
607
607
607
15
20
0.25
42
130
40
45
110
75
0.4
0.25
0.5
0.26
10
3.0
10
10
10
10
1.0
0.2
0.4
0.4
0.35
1.0
10
10
10
10
10
10
1.0 A
1.0m
150m
150m
1.0m
50m
607
607
607
607
607
607
0.35
1.0
10
10
10m
1.0 A
607
607
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
Table 2. Bipolar Transistors -
Dual
NF@ f
dB
Max
Typ'
Ie
VeE
(sat)@_
Ie
Volts
la
Max
hFEI AVBE Gp
mV
dB
hFE2 Max Min
-TYPE NO.
10
Po
Watts
One
Die
Only
IC
Amp
Max
VCEVolts
IT
hFE@IC
Min
MHz
Min
Typ'
Cob
pF
Max
Typ*
ton
ns
Max
toft
ns
Max
Typ'
Typ"
0.8
0.9
0.9
0.8
35
0.9
5.0
5.0
3.0
10
75
5.0
0.25
1.0
0.25
0.35
0.2
0.2
20
10
20
10
10
10
50 m
1.0m
10m
1.0m
10m
10m
0.85
0.2
0.85
0.S5
10
10
10
10
6.0
6.0
100m
10m
100m
100 m
60 M
60 M
654
654
654
654
654
610A
0.5
0.5
0.5
0.5
6.0
6.0
10
10
10
10
60 M
60m
150m
50m
150m
50m
654
654
610A
654
654
654
PACKAGE
TOCase
No.
No.
BFXll
BFX15
BFX36
BFY81
M0708
M070SA
PM
NM
PM
NM
NG
NM
0.4
0.5
0.4
0.4
0.55
0.55
A
A
A
A
A
A
45
40
60
45
15
15
0
0
0
0
0
0
0.05
0.5
0.05
0.03
0.2
0.2
80
60
100
100
40
40
50 m
100.u
10 u
100 u
10m
10m
130
50
40
60
300
300
8.0
15
6.0
6.0
5.0
5.0
M070SAF
M0708B
M070SBF
M070SF
M091 SA
M091SAF
NM
NM
NM
NM
NM
NM
0.55
0.55
0.55
0.55
0.55
0.35
A
A
A
A
A
A
15
15
15
15
15
15
0
0
0
0
0
0
0.2
0.2
0.2
0.2
0.05
0.05
40
40
40
10m
10m
10m
10m
3.0 m
3.0 m
300
300
300
300
600
600
5.0
5.0
5.0
5.0
1.7
1.7
M0918B
M091S
M0982,F
M0984
M0985
M0986
NM
NM
PA
PA
CA
CA
0.55
0.55
0.4
0.575
0.575
0.55
A
A
A
A
A
A
15
15
50
20
30
15
0
0
0
0
0
0
0.05
0.05
0.6
0.2
0.5
0.2
600
600
200
250
200
200
1.7
1.7
B.O
40
25
3.0m
30m
150 m
10m
150 m
10m
8.0
4.0
M01121
M01121F
M01122F
M01132
M02060F
M01122
NM
NM
NM
NM
NM
NM
0.575
0.35
0.35
0.3
0.35
0.575
A
A
A
A
A
A
30
30
30
15
60
30
0
0
0
0
0
0
0.5
0.5
0.5
0.05
0.5
0.5
50
50
50
50
30
50
10m
10m
20 m
1.0m
0.1 m
10m
200
200
200
600
100
250
8.0
8.0
S.O
1.7
15
3.5
0.9
0.9
0.9
0.9
0.9
0.8
10
10
5.0
5.0
5.0
5.0
0.1
0.1
0.1
0.4
0.1
0.1
10
10
10
10
8.0
10
10m
10m
10m
10m
10m
10m
654
654
654
654
610A
654
M01123
M01130
M03467
M04260
M04261
NM
NM
NG
NH
NH
0.575
0.575
0.6
0.55
0.55
A
A
A
A
A
40
40
40
12
12
0
0
0
0
0
0.2
0.2
1.5
0.05
0.05
50
100
20
30
30
10m 250
10m 200
500 m 150
10m 1000
10m 1000
3.5
3.5
SO
2.5
2.5
0.8
0.9
40
0.8
O.S
10
5.0
120
10
10
O.IS
O.IS
0.5
0.3
0.3
10
5
10
10
10
0.1 m
1.0m
500 m
10m
10m
654
654
654
654
654
40
50
50
50
50
40
25
-
-
0.8
10
-
-
0.9
0.9
5.0
5.0
0.8
0.8
10
10
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-33
78
78
78
78
654
654
654
654
654
654
•
MULTIPLE DEVICES (continued)
Table 2. Bipolar Transistors -
Duals (continued)
NF@ f
dB
Max
Typ*
Ie
VeE
(sat)@_
Ie
Volts
18
Max
hFEI .!.VBE G p
dB
mV
hFE2 Max Min
--
•
TYPE NO.
10
Po
Watts
One
Ole
Only
IC
Amp
Max
VCEVolts
iT
hFE@lc
Min
MHz
Min
Typ*
Cob
pF
Max
Typ*
ton
ns
Max
Typ'
toft
ns
Max
Typ'
350
310
310
MD221B
MD221BA
MD221BAF
MD2219
MD2219A
MD2219AF
NG
NG
NG
NG
NG
NG
0.575
0.575
0.35
0.575
0.575
0.35
A
A
A
A
A
A
30
30
30
30
30
30
0
0
0
0
0
0
0.5
0.5
0.5
0.5
0.5
0.5
40
40
40
50
100
100
150 m
150 m
150 m
150 m
150 m
150 m
200
200
200
200
200
200
B.O
B.O
B.O
B.O
B.O
B.O·
60
45
45
-
-
45
45
MD2369
MD2369A
MD2369AF
MD2369B
MD2369BF
MD2904
NS
NM
NM
NM
NM
PG
0.55
0.55
0.35
0.55
0.35
0.575
A
A
A
A
A
A
15
15
15
15
15
40
0
0
0
0
0
0
0.5
0.5
0.5
0.5
0.5
0.6
40
40
40
40
40
40
10m
10m
10m
10m
10m
150 m
500
500
500
500
500
200
4.0
4.0
4.0
4.0
4.0
B.O
MD2904A
MD2904AF
MD2905
MD2905A
MD2905AF
MD3250
PG
PG
PG
PG
PG
PA
0.575
0.35
0.575
0.575
0.35
0.575
A
A
A
A
A
A
60
60
40
60
60
40
0
0
0
0
0
0
0.6
0.6
0.6
0.6
0.6
0.2
40
40
100
100
100
50
150 m
150 m
150 m
150 m
150 m
1.0 m
200
200
200
200
200
200
MD3250A
MD3250AF
MD3251
MD3251A
MD3251AF
MD3409
PM
PM
PA
PM
PM
NM
0.575
0.35
0.575
0.575
0.35
0.575
A
A
A
A
A
A
40
40
40
40
40
30
0
0
0
0
0
0
0.2
0.2
0.2
0.2
0.2
0.5
50
50
100
100
100
50
1.0 m
1.0m
1.0m
1.0 m
1.0m
10m
MD341 0
MD3725
MD3725F
MD3762
MD3762F
MD5000
NM
NS
NS
PS
PS
PH
0.575
0.6
0.35
0.6
0.35
0.3
A
A
A
A
A
A
30
40
40
40
40
15
0
0
0
0
0
0
0.5
1.0
1.0
1.5
1.5
0.05
50
50
50
20
20
20
MD5000A
MD5000B
MD6001
MD6001F
MD6002
MD6002F
PM
PM
CG
CG
CG
CG
0.3
0.3
0.575
0.35
0.575
0.35
A
A
A
A
A
A
15
15
30
30
30
30
0
0
0
0
0
0
0.05
0.05
0.5
0.5
0.5
0.5
MD6003
MD6100
MD6100F
MD7000
MD7001
MD7001F
CG
CA
CA
NA
PA
PA
0.575
0.5
0.35
0.575
0.6
0.35
A
A
A
A
A
A
30
45
45
30
30
30
0
0
0
0
0
0
MD7002
MD7002A
MD7002B
MD7003
MD7003A
MD7003B
NA
NM
NM
NA
NM
NM
0.575
0.575
0.575
0.55
0.55
0.55
A
A
A
A
A
A
40
40
40
40
40
40
0
0
0
0
0
0
PACKAGE
TO·
Case
No.
No.
310
310
0.4
0.3
0.3
0.35
0.3
0.3
10
150m
10
150m
10
150m
10 . 300m
10
150m
150m
10
654
654
610A
654
654
610A
15
0.9
0.9
0.8
0.8
45
20
5.0
5.0
10
10
130
0.25
0.25
0.25
0.25
0.25
0.4
10
10
10
10
10
10
10m
10m
10m
10m
10m
150m
654
654
610A
654
610A
654
B.O
B.O
B.O
B.O
B.O
6.0
45
45
45
45
45
130
130
130
130
130
0.4
0.4
0.4
0.4
0.4
0.25
10
10
10
10
10
10
150m
150 m
150m
150m
150m
10m
654
610A
654
654
610A
654
200
200
250
250
250
200
6.0
6.0
6.0
6.0
6.0
B.O
0.9
0.9
5.0
5.0
0.9
0.9
0.8
5.0
5.0
10
0.25
0.25
0.25
0.25
0.25
0.15
10
10
10
10
10
10
10m
10m
10m
10m
.10m
10m
654
610A
654
654
610A
654
10m
100 m
100 m
1.0 A
1.0 A
3.0 m
200
200
200
150
150
600
B.O
10
10
20
20
1.7
0.9
45
45
40
40
10
75
75
110
110
0.15
0.26
0.26
1.0
1.0
15
10
10
10
10
10
10m
100m
100m
1.0 A
1.0 A
200 M
654
654
610A
654
610A
654
20
20
40
40
100
100
3.0 m
3.0 m
150 m
150 m
150 m
150 m
600
600
200
200
200
200
1.7
1.7
B.O
0.9
0.8
60
60
60
60
5.0
10
350
350
350
350
15
15
0.4
0.4
0.4
0.4
10
10
10
10
200 M
200 M
150m
150m
150m
150m
654
654
654
610A
654
610A
0.5
0.05
0.05
0.5
0.6
0.6
20
100
100
70
70
70
150 m
0.1 m
0.1 m
150 m
150 m
150 m
200
30
30
200
200
200
4.0
4.0
B.O
B.O
B.O
0.59
0.25
0.25
0.4
0.4
0.4
10
10
10
10
10
10
300m
1.0m
10m
150m
150 m
150m
654
654
610A
654
654
610A
0.03
0.03
0.03
0.05
0.05
0.05
40
40
40
50
50
50
100 u
100 u
100 u
10m
10 m
10 m
200
200
200
200
200
200
6.0
6.0
6.0
6.0
6.0
6.0
0.35
0.35
0.35
0.35
0.35
0.35
10
10 .
10
10
10
10
B.O
B.O
B.O
-
0.75
0.85
25
15
0.75
0.85
25
15
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-34
10m
10m
10m
1.0m
1.0m
1.0m
654
654
654
654
654
654
Table 2. Bipolar Transistors -
Duals (continued)
NF@ f
dB
Max
Typ'
Ie
VeE
(sat)@_
Ie
Volts
18
Max
hFEl 4.VBE G p
mV
dB
hFE2 Max Min
-TYPE NO.
10
Po
Watts
One
Die
Only
IC
Amp
Max
VCEVolts
1T
hFE@IC
Min
MHz
Min
Typ'
Cob
pF
Max
Typ'
MD7004
MD7oo5
MD7oo7
MD7oo7A
MD7oo7B
MD7007BF
NA
PA
PA
PM
PM
PM
0.55
0.55
0.575
0.575
0.575
0.35
A
A
A
A
A
A
13
12
40
50
60
40
0
0
0
0
0
0
0.2
0.05
0.2
0.2
0.2
0.2
30
30
30
30
30
30
10m 675'
3.0 m 650
1.0m 300
1.0m 300
1.0m 300
1.0m 300
4.0
3.0
8.0
8.0
8.0
8.0
MD7021
MD7021F
MD8001
MD8002
MD8003
2N2060
CG
CG
NM
NM
NM
NM
0.55
0.35
0.575
0.575
0.575
0.5
A
A
A
A
A
A
40
40
40
40
40
60
0
0
0
0
0
0
0.05
0.05
0.03
0.03
0.03
0.5
50
50
100
100
100
30
10m 200
10m 200
1.0m 2601.0m 260"
1.0m 260100 u
60
2N2223
2N2223A
2N2453
2N2453A
2N2480A
2N2639
NM
NM
NM
NM
NM
NM
0.5
0.5
0.5
0.5
0.3
0.3
A
A
A
A
A
A
60
60
30
50
40
45
0
0
0
0
0
0
0.5
0.5
0.05
0.05
0.5
0.03
25
25
80
80
50
50
100 u
100 u
10 u
10 u
1.0 m
10 u
2N2640
2N2641
2N2642
2N2643
2N2644
2N2652
NM
NE
NM
NM
NE
NM
0.3
0.3
0.3
0.3
0.3
0.3
A
A
A
A
A
A
45
45
45
45
45
60
0
0
0
0
0
0
0.03
0.03
0.03
0.03
0.03
0.5
50
50
100
100
100
50
2N2652A
2N272t
2N2722
2N2903
2N2913
2N2914
NM
NM
NM
NM
NE
NE
0.3
0.3
0.3
0.6
0.3
0.3
A
A
A
60
60
A
A
30
45
45
0
0
0
0
0
0
0.5
0.04
0.04
0.05
0.03
0.03
50
30
50
125
60
150
2N2915
2N2916
2N2917
2N2918
2N2919
2N2920
NM
NM
NM
NM
NM
NM
0.3
0.3
0.3
0.3
0.3
0.3
A
A
A
A
A
A
45
45
45
45
60
60
0
0
0
0
0
0
0.03
0.03
0.03
0.03
0.03
0.03
60
150
60
150
60
150
10
10
10
10
10
10
2N4854
2N4855
2N3043
2N3044
2N3045
2N3048
CG
CG
NM
NM
NE
NE
0.3
0.3
0.25
0.25
0.25
0.25
A
A
A
A
A
A
40
40
45
45
45
45
0
0
0
0
0
0
0.6
0.6
0.03
0.03
0.03
0.03
35
20
100
100
100
50
0.3
0.3
10
10
10
10
2N3425
2N3726
2N3727
2N3806
2N3807
2N3808
NA
PE
PE
PE
PE
PM
0.3
0.4
0.4
0.5
0.5
0.5
A
A
A
A
A
60
60
60
0
0
0
0
0
0.05
0.3
0.3
0.05
0.05
0.05
2N3809
2N381 0
2N3810A
2N3811
2N3811A
PM
PM
PM
PM
PM
0.5
0.5
0.5
0.5
0.5
A
A
A
A
A
60
60
60
60
60
0
0
0
0
0
0.05
0.05
0.05
0.05
0.05
e
45
15
45
45
ton
ns
Max
Typ'
toff
ns
Max
Typ'
0.4
0.4
1.0
1.0
1.0
1.0
0.75
0.85
0.85
20
10
10
6.0
6.0
2.6"
2.6"
2.615
28'
28"
0.35
0.35
0.9
72'
72"
15
15
15
5.0
50
60
60
50
80
15
15
8.0
8.0
18
8.0
0.8
0.9
0.9
0.9
0.8
0.9
15
5.0
3.0
3.0
5.0
5.0
1.2
1.2
10 u
10 u
10 u
10 u
10 u
1.0m
80
80
80
80
80
60
8.0
8.0
8.0
8.0
8.0
15
0.8
10
0.9
0.8
5.0
10
0.85
3.0
1.2
1.0m
0.1 m
1.0 u
1.0 m
10 u
10 u
60
80
100
60
60
60
15
6.0
6.0
8.0
6.0
6.0
0.9
0.8
0.9
0.8
3.0
10
5.0
10
1.0
1.0
u
u
u
u
u
u
60
60
60
60
60
60
6.0
6.0
6.0
6.0
6.0
6.0
0.9
0.9
0.8
0.8
0.9
0.9
5.0
5.0
10
10
5.0
5.0
m
m
u
u
u
u
200
200
30
30
30
30
-
-
8.0
8.0
8.0
8.0
-
30
135
135
150
300
150
10m
1.0m
1.0 m
0.1 m
0.1 m
0.1 m
300
200
200
100
100
100
6.0
8.0
8.0
4.0
4.0
4.0
300
150
150
300
300
0.1
0.1
0.1
0.1
0.1
100
100
100
100
100
4.0
4.0
4.0
4.0
4.0
50
m
m
m
m
m
-
-
1.3
-
10
10
10
10
10
10m
10m
50m
50m
50m
50m
654
654
654
654
654
610A
10
10
10m
10m
8.0
1000 H
78
654
610A
654
654
654
654
10
7.0
4.0
10
4.0
50m
50m
1000 H
1000 H
50m
AUO
78
78
78
78
78
78
654
654
654
654
654
654
4.0
4.0
4.0
4.0
4.0
10
AUD
AUD
AUD
AUD
AUD
50m
78
78
78
78
78
78
654
654
654
654
654
654
8.0
10
20
7.0
4.0
3.0
1000 H
10m
10m
1000 H
AUD
AUD
78
78
78
78
654
654
654
654
654
654
4.0
3.0
4.0
3.0
4.0
3.0
AUD
AUD
AUD
AUD
AUD
AUD
654
654
654
654
654
654
8.0
8.0
5.0
5.0
5.0
5.0
100 u
100 u
AUD
AUD
AUD
AUD
654
654
610A
610A
610A
610A
tOOOH
1000 H
100 H
100 H
100 H
654
654
654
654
654
654
100
100
100
100
100
654
654
654
654
654
10
10
0.9
0.8
5.0
10
0.9
0.9
5.0
2.5
0.8
5.0
4.0
4.0
7.0
4.0
7.0
0.8
0.9
0.95
0.9
0.95
5.0
3.0
1.5
3.0
1.5
4.0
7.0
3.0
4.0
1.5
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
1-35
PACKAGE
TOCase
No.
No.
H
H
H
H
H
•
MULTIPLE DEVICES (continued)
Table 2. Bipolar Transistors -
Duals (continued)
NF@ f
dB
Max
Typ*
Ie
VeE
(sat)@_
Ie
Volts
18
Max
hFEI aVBE Gp
mV
dB
hFE2 Max Min
--
•
TYPE NO.
Po
Walls
One
Die
Only
10
VCEVolls
IC
Amp
Max
hFE@IC
Min
fT Cob
MHz pF
Min Max
Typ* Typ'
ton
ns
Max
Typ'
tolf
ns
Max
Typ'
2N3817
2N3838
2N4015
2N4016
2N4854
2N4855
PM
CE
PM
PM
CE
CE
0.5
0.25
0.4
0.4
0.3
0.3
A
A
A
A
A
A
60
40
60
60
40
40
0
0
0
0
0
0
0.05
0.6
0.3
0.3
0.6 .
0.6
300
100
135
135
100
40
0.1 m
150m
1.0 m
1.0m
150 m
150 m
100
200
200
200
200
200
4.0
8.0
8.0
8.0
8.0
8.0
0.9
50
0.9
0.9
60
60
3.0
340
5.0
2.5
350
350
2N4937
2N4938
2N4939
2N4941
2N5793
2N5794
PM
PM
PE
PM
NG
NG
0.6
0.6
0.6
0.6
0.5
0.5
A
A
A
A
A
A
40
40
40
40
40
40
0
0
0
0
0
0
0.05
0.05
0.05
0.05
0.6
0.6
50
50
50
50
40
100
1.0m
1.0 m
1.0m
5.0
5.0
5.0
5.0
8.0
8.0
0.9
0.8
3.0
5.0
150 m
150 m
300
300
300
300
200
200
0.9
45
45
3.0
310
310
2N5795
2N5796
NG
NG
0.5 A
0.5 A
60
60
0
0
0.6
0.6
40
100
150 m
150 m
200
200
8.0
8.0
47
47
140
140
LOrn
4.0
PACKAGE
TOCase
No.
No.
B.O
B.O
100
1000
1000
1000
1000
1000
H
H
H
H
H
H
610A
610A
654
654
654
654
0.3
0.3
4.0
4.0
40
4.0
10
10
AUO
AUO
AUO
AUO
150m
150m
654
654
654
610A
654
654
0.4
0.4
10
10
150m
150m
B.O
4.0
4.0
654
654
Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
Surface Mount Multiples
Table 3. Bipolar Quad Transistors -
50-16
fT
hFE
Device
V(BR)CEO
V(BR)CBO
Min
@ICmA
MHz Min
@IC(mA)
Package
MMPQ2222
MMPQ2222A
MMPQ2369
MMPQ2907
MMPQ2907A
40
40
15
40
50
60
75
40
40
60
30
40
20
30
50
300
500
100
300
500
350'
350'
450
350'
350'
20
20
10
50
50
7518
7518
7518
7518
7518
MMPQ3467
MMPQ3725
MMPQ3725A
MMPQ3762
40
40
50
40
40
60
70
40
20
25
30
20
500
500
500
1000
125
250
200
150
50
50
50
50
7518
7518
7518
7518
Typ
Table 4. TM05 FETs N-CHANNEL TMOS QUAD -
Quads
CASE 646-06 (14-PIN DIP)
rOS(on)
Max
Min
1.4
1.7
1.0
1.0
1.0
1.0
n
Device
MFQ930P
MFQ960P
N-CHANNEL TMOS QUAD 'OS(on)
@
n
Device
Max
mA
IRFE110
IRFE113
0.6
0.8
800
800
V(BR)OSS
Ciss
Crss
Ion
'off
Max
V
Min
pF
Max
pF
Max
ns
Max
ns
Max
3.5
3.5
35
60
70
70
18
18
15
15
15
15
VGS(lh)
V
@
10
A
CASE 648-06 (16-PIN DIP)
Gfs
V(BR)OSS
10(on)
@
Voll
VGS = 10 V
mhos
5.0 V
VOS = 5.0 V
Min
Amp
Amp
Min
100
60
P-CHANNEL TMOS QUAD -
1.0
0.8
0.8
0.8
0.8
0.8
coss
c,ss
Ciss
@25V @25V @25V
pF
pF
pF
Max
Max
Max
200
200
100
100
25
25
Id(on)
I,
id(off)
If
ns
Max
ns
Max
ns
Max
ns
Max
20
20
25
25
25
25
20
20
CASE 648-06 (16-PIN DIP)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-36
Multiple Switching Diodes
Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast
switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower
cost, higher reliability and space savings.
Diode Array Diagrams
10
5
"mB:
Dual 10
Diode
Array
2
"mIT:
Dual 10
Diode
Array
3m.
Dual 8
Diode
Array
16
Diode
Array
(Common
Cathode)
8 Diode
Array
(Common
Cathode)
Array
(Common
Anode)
4
Diode
CASE 29-04
PLASTIC
CERAMIC
8 Diode
NC Pm 1 4,6 10.13
Array
Isolated
7 Diode
Array
NC Pm 1
8
®IIIIIIIl
7 Diode
Array
NC Pin 1, 4, 6, 10 13
(Common
Cathode)
®IIIIIIIl
13
CD!IItIIl
14
Dual
Diode
NG Pm 1
~1
III!I!I!
III!!!!
12
®IIIIIIIt
CASE 607-04
10
J__~~
Isolated
9
Array
(Common
Anode)
Array
11
®IIIIIIIl
8 Diode
16
NC Pin 6 13
7
8 Diode
NC Pm 4. 6, 10.13
"H[
Diode
Array
6
8 Diode
Array
-
MaXimum Working Voltage
Cap
Ratio
C2/C30
Min
lN5476A
lN5456A
MV1650
0
is
2
4 6 10
20
40 60
VR, REVERSE VOLTAGE (VOLTSI
Premium 30 V
Very High Q
Guaranteed High CR
Capacitance TOl
10% - A, 5% - B, 2<% - C
lN5472A
lN5452A
MVl642
u
;t
«
u
~
~
lN5470A
lN5450A
MV1638
~
u
-lN51414.A
-~
0.6
1000
Q
Device
Type
Cap
Ratio
C2/C30
Min
50 MHz
Min
11> 4 V
Device
Type
Cap
Ratio
C2/C20
Min
CASE 51·02
DO·204AA
(DO-7)
Q
@4V
50 MHz
Min
Device
Type
2.7
600
lN5461A
2.5
450
lN5441A
2
300
MV1620
2.8
600
lN5462A
25
450
lN5442A
2
300
MV1622
2,8
550
lN5463A
2.6
400
lN5443A
2
300
MV1624
28
550
lN5464A
26
400
lN5444A
2
300
MV1626
2.8
550
lN5465A
2.6
450
lN5445A
2
250
MV1628
2.9
500
lN5466A
2.6
350
lN5446A
2
250
MV1630
2.9
500
lN5467A
2.6
350
lN5447A
2
250
MV1632
2.9
500
lN5468A
2.6
350
lN5448A
2
250
MV1634
2.9
500
lN5469A
2_6
350
lN5449A
2
200
MV1636
2.9
500
lN5470A
2.6
350
lN5450A
2
200
MV1638
2.9
450
lN5471A
2.6
300
1N5451 A
2
200
MV1640
2.9
400
lN5472A
2.6
250
lN5452A
2
200
MV1642
2.9
300
lN5473A
2.6
200
lN5453A
2
150
MV1644
2.9
250
lN5474A
2.7
175
lN5454A
2
150
MV1646
2.9
225
lN5475A
2,7
175
lN5455A
2
150
MV1648
2.9
200
lN5476A
2.7
175
lN5456A
2
150
MV1650
-
CT
Nominal
pF
±HI%
@
VR
f
= 1 MHz
-
-
-
8.2
10
12
15
18
20
22
27
33
39
47
c---56
c---68
I----
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
1-41
= 4V
-
6.8
82
I--100
TUNING DIODES -
ABRUPT JUNCTION (continued)
TYPICAL CHARACTERISTICS
Diode Capacitance versus Reverse Voltage
1000
MV2109
MV2209
MMBV2109L
MV2112
MV2212
MV2115
MV2215
~
tJ
:z:
100
;:;
U
~
<3
~
0
a
10
,.:.
u
MV2101
MV2201
MMBV2101L
MV2105
MMBV2105L
1
0.1
1
10
100
CASE 182-02
(T0-92)
STYLE I
VR, REVERSE VOLTAGE IVOLTS}
2 o----j
Cathode
I+-----<:>
1
Anode
CASE 318-03
(TO-236AB)
STYLE 8
Table 2. General-Purpose Plastic
3 o----j 1+-----<:>1
Cathode
Anode
• Low-Cost
• High Volume
•
• Lower Cost
• General-Purpose
Low~Cost
• High Volume
Maximum Working Voltage
30 Volts
25 Volts
30 Volts
CASE 182-02
2-Lead TO-92
CT
Nominal
Capacitance
pF
±10%
@
VR = 4V
f = 1 MHz
a
a
Cap
Ratio
C2/C30
Min
@4V
50 MHz
Min
Device
Type
C1/C10
Min
@4V
50 MHz
Min
1.9
300
6.8
2.5
450
MV2101
8.2
2.5
450
MV21 02
10
2.5
400
MV21 03
12
2.5
400
MV21 04
15
2.5
400
MV2105
18
2.5
350
MV21 06
22
2.5
350
MV21 07
27
2.5
300
MV21 08
33
2.5
200
MV21 09
39
2.5
150
MV2110
47
2.5
150
MV2111
56
2.6
150
MV2112
68
2.6
150
MV2113
82
2.6
100
MV2114
100
2.6
100
MV2115
Cap
Ratio
CASE 318-02
TO-236AA
2
2
2
200
200
150
Device
Type
Ct
±20"k
MV2201
MV2203
MV2205
MV2207
2
150
MV2209
2
100
MV2211
2
100
MV2213
2
50
MV2215
Cap
Ratio
C2/C30
Min
Device
Type
2.5
400
MMBV2101L
2.5
350
MMBV2102L
2.5
350
MMBVZ103L
2.5
350
MMBV2104L
2.5
350
MMBVZ105L
2.5
300
MMBVZ106L
2.5
300
MMBV2107L
2.5
250
MMBV2108L
2.5
200
MMBV2109L
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-42
a
@4V
50 MHz
Typ
Table 3. Dual Diodes
1~T~2
T~3
•
• High Q
• Guaranteed Capacitance
3
CASE 318-03
(TO-236AB)
STYLE 9
Range
• Monolithic Oual
1
CASE 29-04
TO-22 6AA
(TO -92)
STYL E 15
Maximum Working Voltage
32 Volts
CT Capacitance
@
pF
Min
Max
VR
Volts
Q
Cap
Ratio
C3/C30
Min
@3V
50 MHz
Min
Device
MV104G(11
Type
34
39
3
2.5
100
37
42
3
2.5
100
MV104(11
43
48.1
2
1.5"
100
MMBV432L121
(11 Case 29
100
70
~
(2) Case 318
-
'C2IC8
....
I::::-....,
~
r-----: t----...
;0 40
u
'-
MMBV432L
MV104
-
:::---...
20
10
0.3
TA = 25"C
f = 1 MHz
EACH DIODE
I I I III
0.5
1
" ~ :--....
""""
2
3
10
VR, REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-43
20
30
Tuning Diodes Hyper-Abrupt Junction
Table 4. For FM Radio and TV
/
h
1
2 o-------j!+---O 1
Cathode
Anode
2
•
CASE 318·03
(TO-236ABI
STYLE S
CASE 182-02
(TO-S21
STYLE 1
.
3
o-------j!+---o
Cathode
1
Anode
TYPICAL CHARACTERISTICS
• High Q
• Guaranteed Capacitance
Range
~
Capacitance
Diode Capacitance versus Reverse Voltage
40
Maximum Working Voltage
36
30 Volts
32
Min
Max
Volts
Min
I.S
2.S
25
4
350
MMBV105GL'
20
25
3
4.5
300
MMBV3102L'
26
32
3
5
250
MMBV109L'
.
.
26
32
Ca •• 318
Cap
Ratio
VR
C3/C25
3
250
5
'\. MV209
,MMBV109L
~28 i'..
Q
@3V
50 MHz
Typ
@
pF
r--.
Device
Type
~
'
~ 24
"\
MMBV3102L ...... t--...
~ 20
16
"-
<'i
""""i---.L
w
g
.......
TA = 25°C_
f = I MHz
12
is
.,:.
'-'
r--.
MMBVI05GL
~
...... =:::::::::
-
4
MV20S"
o
*Case 182
2
5
10
YR. REVERSE VOLTAGE (VOLTSI
1
20
30
Table 5. For AM Radio
2 o-------j!+---O 1
Cathode
Anode
CASE 182-02
(TO-921
STYLE 1
2
1000
700
500
• High Capacitance Ratio
• Guaranteed Diode Capacitance
• Close Matching
Q @ 1 Vd•• 1 MHz = 150 (Min)
CT
VR=' V. f=1 MHz
~
z
Cap
Device
Ratio @ VR
Volts
Min
VaRIR)
Min
pF
Min
Max
440
560
12
400
520
15
440
560
18
440
560
28
15
15
Type
\.,"-
~ 300
200
t!'
'-'
TA 25°C
f = 1 MHz
-
~
::
100
« 70
'-'
S 50
lIS
MVAM10S
12
1/9
MVAM109
15
1/15
MVAM115
30
20
1/25
MVAM125
10
\,1'
I---.
I'.
MVAMI~'::
i'MVAMI15
MVAMI09
r-
-
MiAMlI25-
I
M
W
~
YR. REVERSE VOLTAGE (VOLTSI
n
~
Table 6. For High Capacitance and High Reliability Applications
100% Screening to High Rei electrical and environmental
specifications. H suffix.
14~_01 2
20--11+--01
CASE
00-204AB
(DO 141
Anode
500
300
~ 200
• Hyper·Abrupt
/'
1
CASE 51-02
00-204AA
(00-7)
CT. Nominal Capacttance
pF
VR
• HIgh Tuning Ratio
• HIgh Rei - SuffiX H
12 Volts
Device Type
Cap
Q
Ratto
@2V
C2lCl0
Case 51
~
~
0
is
.,:.
'-'
Volts
Min
120
2
10
200
MV1404.H
175
2
10
200
MV1403.H
10
250
2
10
200
MVI405.H
6
1
14111
200
550'
*:!:15%
MV1401,H
(1)CapAatLO(1I C1fC1QV
=
-
30
20
Nom ± 20%
Case 146
........
100
<'i 50
......
0
~
z
MaXimum WOrkIng Voltage
1 MHz
Min
@
......
Cathode
i'.
......
V
~ t-....
MVI405
MVI403 ,., / '
MVI404
,.,.
......
MVI401
......
......
"'
i'"
........
......
...........
o
3
4
5
6
7
YR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
1-44
TA = 25"Cf=IMHz-
I
-
---.....
10
Table 7. Hot-Carrier (Schottky) Diodes
CASE 318-03
(TO-236AB)
STYLE 8
Hot-Carrier diodes are ideal for VHF and UHF mixer and
detector applications as well as many higher frequency applications. They provide stable electrical characteristics by
eliminating the point-contact diode presently used in many
applications.
,~,2
CT
f = 1 MHz
pF
VR
Max @Volts
VF
IF = 10 mA
Volts
Max
~I
C
3
SINGLE
STYLE 11 1 c~~~I-...~.~t-1-----+III"'h-1II'l11"'~c 2 SERIES
(TO-92)
STYLE 1
ca:h~~n:de
V(BR)R
IR = 10,.A
Volts
Min
1C
TYPICAL CHARACTERISTICS
Capacitance versus Reverse Voltage
IR
nA
VR
Max @Volts
Device
Type
1
TA
9
CASE 182, STYLE 1
4
1
0
0.6
250
20
1.5
15
0.6
200
15
MBD201L
30
1.5
15
0.6
200
25
MBD301L
50
1
20
1.2
200
25
MBD501L
70
1
20
1.2
200
35
MBD701L
3
=
25°C
MallOl
.........
MMBD101
............
MBD101L
r--
7
--
MMBD352'
MMBD353-
6
1
2
VR. REVERSE VOLTAGE (VOLTSI
CASE 318, STYLE 8
tEACH DIODE
4
1
0
0.6
250
3
MMBD101L
20
1.5
15
0.6
200
15
MMBD201L
30
1.5
15
0.6
200
25
MMBD301L
50
1
20
1.2
200
25
MMBD501L
70
1
20
1.2
200
35
MMBD701L
2.8
2.4
TA=25OC-
l\~iD201.
~MBDb,
MB0301, MMB03Dl
r:
'!i:
DUAL DIODES, CASE 318
"\J
I"
~O.8
u
..........
0.4 f-MBD501. MMBD501
o
'Style 11
~~D701'rMBDf'
o
--Style 19
Table 8. PIN Switching Diodes
... designed for VHF band switching and general-purpose
switching.
~
1
10
15
20
25
30
35
YR. REVERSE VOLTAGE (VOLTS)
CASE 182-02
(TO-92)
STYLE 1
0--11+---<> 1
2
Cathode
2
Anode
40
45
50
CASE 318-03
(TO-236AB)
STYLE 8
~I
1C
C
3
SINGLE
10
RS
IF = 10 mAde
f = 100 MHz
Ohms
Max
V(BR)R
IR = 10 ,.Adc
Volts
Min
~
VR = 20 V
f=1MHz
pFMax
Device
Type
2
MPN3404
I
~:
I
MPN3700
:0:
I
~
Q
2
MPN3404
1
'"/j 0.5
CASE 318, STYLE 8
I
~
tJ
CASE 182, STYLE 1
0.85
TA 2S"C=
f 1MHz-
0.3
0.2
0.7
I
o
MMBV3401L
20V MAXVR
12
18
24
30
36
VR, REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
1-45
MPN3700
MMBV3700L
42
48
54
Signal and Switching Diodes
SOT-23 Surface Mount Diode Configurations
.,
STYLE 8 1 0
•
STYLE 9 1 0
03
I
'oil
::. 2
STYLE 12 10
o 3
'oil
STYLE 11 1 0
., I .,
D2
STYLE 19 1 0
3
SINGLE
I
'oil
.,
02
3
COMMON ANODE
3
COMMON CATHODE
SINGLE
STYLE 18 2 0
.,
'oil
I3
02
'oil
SERIES
SERIES
. Table 9. General-Purpose Switching Diodes
IR
VIBRIR
Device
Marking
VF
Min (V) I @ IBR (pA) Max (PA)I@ VR (V) Min (V) I Max (V) I
CT
~ IF (mA)
I"
Max (pF) Max (ns)
Pin
Oul
Case
Slyle
SINGLES
MMBD6050L
MMBD914L
BAS16L
BAL99L
5A
5D
A6
TF
70
100
75
70
100
100
100
10
0.1
5.0
1.0
2.5
50
75
75
70
MBAV70L
MBAW56L
MBAV99L
MBAV74
A4X
A1X
A7X
JAX
70
70
70
50
100
100
100
5.0
5.0
2.5
2.5
0.1
MMBD2835XL
MMBD2836XL
MMBD2837XL
MMBD2838XL
MMBD6100L
MMBD7000L
A3X
A2X
A5X
A6X
5B
5C
35
75
35
75
70
100
100
100
100
100
100
100
0.1
0.1
0.1
0.1
0.1
0.3
0.85
1.1
1.0
1.3
1.1
100
10
100
50
2.5
4.0
2.0
1.5
4.0
4.0
4.0
4.0
8
8
8
18
70
70
70
50
1.1
1.1
1.1
1.0
50
50
50
100
1.5
1.5
1.5
2.0
15
15
15
9
12
11
9
30
50
30
50
50
50
1.0
1.0
1.0
1.0
1.1
1.1
10
10
10
10
100
100
4.0
4.0
4.0
4.0
2.5
1.5
15
15
15
15
15
15
12
12
9
9
9
11
DUALS
0.85
0.75
MOTOROLA SMALL-S'GNAL TRANSiStORS, FETs AND D'ODES
1-46
~-
1 ( / / f:O-226AA)
23
To-92
1
f,
CASE 318-03
(TO-236AB)
SOT-23
ASE 182-02
(T0-226AC)
TO-92
2
':'1m n~ ~
14 -
CASE 646-06
(TO-116)
Plastic-Encapsulated
Transistors
16~
~~ASE
1
751B-03
SO-16
Motorola's plastic transistors and diodes encompass
hundreds of devices spanning the gamut from general-purpose
amplifiers and switches with a wide variety of characteristics to
dedicated special-purpose devices for the most demanding
applications. The popular high-volume TO-226AA (TO-92) package combines proven reliability, performance, economy and convenience to provide the perfect solution for industrial and consumer design problems.
As an additional service to our customers Motorola will, upon
request, supply the following:
• Radial tape and reel
• Axial tape and reel
• TO-205AA (TO-5) lead forming
• TO-206AA (TO-18) lead forming
Contact your Motorola representative for ordering information.
This section contains both single and multiple plasticencapsulated transistors.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-1
..
2N3903
2N3904
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltge
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
Collector Current -
•
Continuous
IC
200
mAde
Total Device Dissipation (a: TA = 25°C
Derate above 25°C
Po
625
5.0
mWrC
"Total Device Dissipation @. TC = 25°C
Derate above 25°C
Po
1.5
12
mWrC
-55to +150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
mW
~~
Watts
1 Emitter
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIIJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RIIJA
200
°CIW
GENERAL PURPOSE
TRANSISTORS
NPN SILICON
"Indicates Data in addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 iAAdc, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 iAAdc, IC = 0)
V(BR)EBO
6.0
-
Vdc
IBL
-
50
nAdc
ICEX
-
50
nAde
Characteristic
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 30 Vdc, VEB
= 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vde, VEB = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 0.1 mAde, VCE
-
hFE
=
1.0 Vde)
2N3903
2N3904
20
40
-
(lC
=
1.0 mAde, VCE
=
1.0 Vde)
2N3903
2N3904
35
70
-
(lc
=
10 mAde, VCE
=
1.0 Vde)
2N3903
2N3904
50
100
150
300
(lC
= 50 mAde, VCE =
1.0 Vde)
2N3903
2N3904
30
60
-
(lc
=
2N3903
2N3904
15
30
-
-
0.2
0.3
100 mAde, VCE
=
1.0 Vde)
Collector-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
2N3903
2N3904
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-2
-
Vde
Vde
0.65
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
-
0.85
0.95
2N3903,2N3904
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted)
Characteristic
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(V BE = 0.5 Vde, IC
= 0, f =
1.0 MHz)
Input Impedance
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
2N3903
2N3904
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
2N3903
2N3904
Small·Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f
=
1.0 kHz)
2N3903
2N3904
Output Admittance
(lC = 1.0 mAde, VCE
=
1.0 kHz)
Noise Figure
(lc = 100 ~de, VCE
f = 1.0 kHz)
Symbol
Min
Max
Unit
Cabo
-
4.0
pF
Cibo
-
B.O
pF
1.0
1.0
B.O
10
0.1
0.5
5.0
8.0
50
100
200
400
1.0
40
-
6.0
5.0
-
35
ns
35
ns
175
200
ns
50
ns
k ohms
hie
X 10- 4
h re
hoe
=
10 Vde, f
=
5.0 Vde, RS
/"mhos
NF
=
1.0 k ohms,
..
-
hfe
dB
2N3903
2N3904
SWITCHING CHARACTERISTICS
(VCC = 3.0 Vde, VBE = 0.5 Vde,
IC = 10 mAde, IB1 = 1.0 mAde)
Delay Time
Rise Time
(VCC = 3.0 Vde, IC = 10 mAde,
IB1 = IB2 = 1.0 mAde)
Storage Time
td
-
tr
2N3903
2N3904
ts
Fall Time
tf
(1) Pulse Test: Pulse Width", 300 /"s, Duty Cycle'" 2.0%.
FIGURE 2 - STORAGE AND FALL TIME
EaUIVALENT TEST CIRCUIT
FIGURE 1 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
10<1,<5001"5-01 I, ~+109V
300 ns -01
J+DUTY CYCLE = 2H'%+10.9V
OON~H::E
-O.SV
<
1.0ns
[
IN916
-9.1 V ....,-~< 1.0ns
·Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
-TJ
= 2SoC •• -TJ = 12SoC
FIGURE 3 - CAPACITANCE
FIGURE 4 - CHARGE DATA
0
5000
v':' = ~o v
300o rlell, = 10
7.0
-
-...... -
2000
5. 0
I-0
r-
~
r-...
r--.. r---.
Cabo
2. 0
I
Ciba
d
...............
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTSI
-r-
,-
500
300
200
r--...
1.0
0.1
1000
700
a.
2.0
3.0
5.0 7.0 10
20 30
Ie. COlLECTOR CURRENT (mAl
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2-3
/
/
-- r- r:.:. f-
100
0
50
1.0
20 30 40
-
--- a, - - ./
V
50
70 100
200
2N3903, 2N3904
FIGURE 5 - TURN-ON TIME
500
"
300
200
~
.~
lell, ~ 10
"-
"l".....
"
)0
~
~
i"
"
1""-
10
).0
!
:-.... ~@Vee ~ 3.0~
.....
~
V
15~
Ie'"
~.i
40V
70
50
'"
3D
l-:::='
t..@Vo ,
2.0
3.0
0
7.0
5.0
1.0
.OV
5.0 ).0 10
20 30
Ie. COLLECTOR CURRENT (mA)
50)0 100
200
2.0
3.0
, .-
-
300
200
- -- - -
-;;;100
--
:
Ile/l~
:-
-
18 ,=1 12
1
II
10
- -f
.....
lelll
lell,
50
"
300
I
200
20
~~
.5
~ 70
~
20~ ~
~
le/l, ~ 1I).d:
~
"-
.
""'I
11I~182
I'.
,
100
70
,: 20
lell,
lell,
3.0
5.0 7.0 10
20 3D
Ie. COLLECTOR CURRENT (mAl
50
70 100
"
20
"' ...
--
....
IO~,
...
~
[:':::'- ~
r-
10
7.0
5.0
1.0
200
...
10 "'-,
le/ l,
20
10
-
lell,-20
50
~ 30
2.0
200
~40V_
V
,
;i1
3D
1.0
50 70 100
FIGURE 8 - FALL TIME
500
t'.~t.-li14-
7.0
5.0
~
5.0 7.0 10
20 30
Ie, COLLECTOR CURRENT (mA)
FIGURE 7 - STORAGE TIME
500
~
~
0
10
5.0
1.0
~
~
,
100
"
20
'~
200
50
30
Vee ~ 40 V
le/l,~ 10
f~
300
100
,.;::.s
FIGURE 6 - RISE TIME
500
.....
2.0
20 3D
50
5.0 7.0 10
Ie, COLLECTOR CURRENT (mAl
3.0
70 100
200
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
VeE ~ 5.0 Vde, T A = 2SoC,
Bandwidth = 1.0 Hz
FIGURE 9
12
I
I
I
II
I
o \
-f~
10
4~
t±
r
J
2
-
t'-..
1===
I
"
~
""f-.
Ie
0.2
~
200 Q
""-"- IX'....,
-....
2.0
/
/
/
/
/
/ ' Ie - 50 plI
/le-I00pA/
/
.......
/
/
1/ /
,/
I
I
1.0
/ 4e~b5'.J/
T .
/
./
"
f-
SOD Q
100 plI
50 plI
0.4
~
t:::- I-- :::t:-
i-= SOURCE RESISTANCE ~ 1.0 k
0
0.1
/
SOURCE RESISTANCE
Ie ~ 0.5 mA
r
L SOURCE RESISTANCE
Ie
/
I
'\.
r"-.,.
II
1~"i.0~ / 1/ I II
/
I
'\.
r r
I
1.0 kHz
12
SOURCE RESISTANCE ~ 200 Q
~ v--rs-Ie ~ 1.0 mA
\
FIGURE 10
14
4.0
10
20
40
o
100
0.1
f, FREQUENCY (kHzl
0.2
0.4
1.0
2.0
4.0
10
R" SOURCE RESISTANCElkohmsl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-4
20
40
100
2N3903, 2N3904
h PARAMETERS
(VCE" 10 Vdc, f " 1.0 kHz, T A" 25°C)
FIGURE 11 - CURRENT GAIN
FIGURE 12 - OUTPUT ADMITTANCE
300
100
200
50
- --
V
~
z
~
f-'
~ 100
B
~ 70
....
V
/.
,/
--
50
20
30
10
0.1
0.2
0.3
2.0
1.0
05
30
5.0
10
01
0.2
0.3
30
5.0
10
Ie. COLLECTOR CURRENT (rnA)
FIGURE 13 - INPUT IMPEDANCE
FIGURE 14 - VOLTAGE FEEDBACK RATIO
......
20
2.0
1.0
05
Ie, COLLECTOR CURRENT (mAl
10
7. o
""
10
~
"\
5. 0
i"I.
1\
1:$
o
'\
~
::; 3 0
r-...
'"
~~
f"...
b-
"' "'
2. 0
~
I'
1"--1""-
~
j 10
0.5
V
V
0.7
0.2
0.5
0.2
0.1
0.3
0.5
3.0
1.0
2.0
5.0
01
10
0.2
0.3
Ie, COLLECTOR CURRENT (mAl
0.5
2.0
1.0
30
50
Ie, COLLECTOR CURRENT (mAl
TYPICAL STATIC CHARACTERISTICS
FIGURE 15 - DC CURRENT GAIN
2.0
~:::;
I
z
~
.1
~
07 I-'"
I-"'
0.3
'"
1
0.2
oI
(
o
-~
-
..-
.....
-'55°C
'I
Ve.~
r--- 1"--",
+25°C
~
~
=>
~ +1125 J
'r-tr-
1.0
0.5
TJ
--t--.,.
1.0 V
C'S
.........
1'1
I'
,
~
"\ r....
"-..
0.1
0.2
0.3
0.5
0.7
1.0
2.0
30
50
7.0
10
20
30
Ie, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-5
50
70
100
~200
10
•
2N3903,2N3904
FIGURE 16 - COLLECTOR SATURATION REGION
1.0
~
TJ
30mA
10mA
le~1.0mA
~
~
lOOmA
\
0.6
l
e5
;:
!
'" 0.4
•
!
I\. ........
o
0.01
0.02
r---....
r--
0.03
0.05
0.07
I'
r-- t--
0.1
0.2
0.3
0.5
lB. BASE CURRENT ImAl
FIGURE 17 - "ON" VOLTAGES
1.2
T}~ 15°c
II
I
i! I
0.8
, I - 1--1-
@I~!I; ~110
Til~ ~
~
0
u
o
1.0
2.0
-1.
1--1--'
II
5.0
10
20
50
Ie. COLLECTOR CURRENT ImAl
100
I
r- 1-1-
10
51!.
200
0:-
-WCTO +25°C
I-
+jOC TO + 125°C
VI-:::'
-2. olr
55°C TO +25°C
1
I
Ve'I .." @ lell, ~ 10
II
7.0
I I I I I I
8ve for VCEtlllltJ
-1. 0
I
I
I
5.0
~115oJ-
is -0. 5
§o
/
O. 2
3.0
I-f-I-
I'"
~>-
I
0.4
2.0
I
o. 5
V,,@Ve ,-1.0V
I
I
0.6
1.0
FIGURE 18 - TEMPERATURE COEFFICIENTS
kH1J.Hf
1'1
~
~
VB;I ...I,
0.7
1. 0
IIII
!
1.0
~
"- ........
'\
~ 0.2
iii
25°C
0.8
~
~
~
I
I
Ova for VIE",t)
w
~
50
50
~
W
~
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-6
~
~
~
2N3905
2N3906
MAXIMUM RATINGS
Rating
Symbol
Value
Colleetor-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Collector Current -
Continuous
Unit
Total Device Dissipation Cd, TA
Derate above 25'C
~
25'C
Po
625
5.0
mW
mWI'C
Total Power Dissipation Cit TA
~
60'C
Po
250
mW
Total Device Dissipation (1;. TC
Derate above 25'C
~
25'C
Po
1.5
12
Watts
mW/'C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
'c
•
, Emitter
"THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS
Symbol
Max
Unit
Rruc
83.3
'C/W
R8JA
200
GENERAL PURPOSE
TRANSISTORS
PNP SILICON
'CIW
(TA ~ 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(IC ~ 1.0 mAde, IB ~ 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC ~ 10 !LAde, IE ~ 0)
V(BR)CBO
40
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 10 !LAde, IC ~ 0)
V(BR)EBO
5.0
-
Vde
Base Cutoff Current
(VCE ~ 30 Vde, VBE ~ 3.0 Vde)
IBL
-
50
nAde
Collector Cutoff Current
(VCE ~ 30 Vde, VBE ~ 3.0 Vde)
ICEX
-
50
nAde
2N3905
2N3906
30
60
-
2N3905
2N3906
40
80
-
(lC ~ 10 mAde, VCE ~ 1.0 Vde)
2N3905
2N3906
50
100
150
300
(lc ~ 50 mAde, VCE ~ 1.0 Vde)
2N3905
2N3906
30
60
-
2N3905
2N3906
15
30
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS(l)
DC Current Gain
(lc ~ 0.1 mAde, VCE ~ 1.0 Vde)
(lC ~ 1.0 mAde, VCE ~ 1.0 Vde)
(lC ~ 100 mAde, VCE ~ 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
(lc ~ 50 mAde, IB ~ 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC ~ 10 mAde, IB ~ 1.0 mAde)
(lC ~ 50 mAde, IB ~ 5.0 mAde)
VBE(sat)
-
-
-
-
Vde
-
-
0.25
0.4
Vde
0.65
-
0.85
0.95
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 10 mAde, VCE ~ 20 Vde, I ~ 100 MHz)
Output Capacitance
(VCB ~ 5.0 Vde, IE
Cobo
~
0, I
~
MHz
IT
2N3905
2N3906
-
-
4.5
100 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-7
-
200
250
pF
2N3905,2N3906
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25"C unless otherwise noted)
Characteristic
Input Capacitance
(VBE ~ 0.5 Vde, IC
~
0, f
~
Min
Max
Unit
Cibo
-
10.0
pF
100 kHz)
~
10 Vde, f
~
1.0 kHz)
2N3905
2N3906
Voltage Feedbaek Ratio
IIc ~ 1.0 mAde, VCE
~
10 Vde, f
~
1.0 kHz)
2N3905
2N3906
Small-Signal Current Gain
IIc ~ 1.0 mAde, VCE ~ 10 Vde, f
~
1.0 kHz)
2N3905
2N3906
Output Admittanee
IIc ~ 1.0 mAde, VCE
~
1.0 kHz)
2N3905
2N3906
~
2N3905
2N3906
k ohms
hie
0.5
2.0
8.0
12
0.1
0.1
5.0
10
50
100
200
400
1.0
3.0
40
60
-
-
5.0
4.0
Id
-
35
ns
tr
-
35
ns
200
225
ns
60
75
ns
X 10- 4
h re
-
hfe
I'mhos
hoe
~
10 Vde, f
~
5.0 Vde, RS
I
-'
Input Impedance
IIC ~ 1.0 mAde, VCE
Noise Figure
IIc ~ 100 /LAde, VCE
f ~ 1.0 kHz)
Symbol
NF
1.0 k ohm,
dB
SWITCHING CHARACTERISTICS
(VCC ~ 3.0 Vde, VBE ~ 0.5 Vde
IC ~ 10 mAde, IB1 ~ 1.0 mAde)
Delay Time
Rise Time
Storage Time
(VCC ~ 3.0 Vde, IC ~ 10 mAde,
IB1 ~ IB2 ~ 1.0 mAde)
Fall Time
2N3905
2N3906
Is
2N3905
2N3906
tf
-
(1) Pulse Width", 300 /LS, Duty Cyele '" 2.0%.
FIGURE 2 - STORAGE AND FALL TIME
EQUIVALENT TEST CIRCUIT
FIGURE 1 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
~J1',~::
~
+0.5:v-~U
.
-106 V~
10 < I, < 5001"
--1O.9V
DUTY CYCLE ~ 2% -i I, t-
14- 300 n,
DUTY CYCLE ~ 2%
'Total shunt capacitance of test jig and connectors
TRANSIENT CHARACTERISTICS
TJ
25"C --- TJ
125°C
=
=
FIGURE 3 - CAPACITANCE
FIGURE 4 - CHARGE DATA
10
7.0
5000
-.
5.0
3000 _
Vcc~40V
-- -
2000
f"'-._I'-Cobo
::::;:(
eibo
~
F""o~
0
I
r-
d
2. 0
1.0
0.1
I~/I.I~
10 1
2.0 3.0
50 7.0 10
20
30
,
500
~
300
200
0.2 0.3 0.5 0.7 1.0
~."
1000
700
--
100
0
50
1.0
50
REVERSE BIAS (VOLTSI
., .," aT
I-"'"
2.0 3.0
"
20 30
5.0 7.0 10
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-8
/
.
V
50 70 100
200
2N3905, 2N3906
FIGURE 5 - TURN-ON TIME
FIGURE 6 - FALL TIME
500
lell.
30O~
100
10
~
"
~~
r-..."
"-
~ 50
.@Vee -lOV
!"'-
w
~
"-
;:: 30
i'-.
~
~
20
-..
~
:>:
;::
7.0
5.0
10
td@VO'
20
3.0
'--
~.:i-
I~""':
4~
...,
'r-..
10
y
I" 40V _
I"
Vee
~
~
'"
100
70
..
~,
.....
300
~
200
500
~
~
100
¥,
lell,~10
lel l,
70
lell,
50
10
10
Ie/I,
10
,
,
~,
......
30
..:.
-- -
~
20
0
0
50 7.0 10
20 30
Ie, COLLECTOR CURRENT ImA)
7. 0
OV
50 70 100
50
1.0
100
20
3.0
20 30
5.0 7.0 -10
Ie, COLLECTOR CURRENT (mA)
50
100
70 100
AUDIO SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
VCE = 5.0 Vde. T A = 25°C,
Bandwidth = 1.0 Hz
12
1-1 =11.0 kHz
FIGURE 7 -
FIGURE 8-
!I
10
~
le-1.0mA
80
~
6.0
!E- 40
1.0
-.....;:
20
O~~
__
~~U-
0.1
I0
__
__-L__
10
20
40
~~-L~
2.0
4.0
'" " ..."-...
~
~
/ ' ./
L
>
F---0.5mA
100 pA--,
V
/ II
'/ V
/ /'
V./
-50pA
b::::
o
~L-U
100
01
02
0.4
1.0
2.0
4.0
10
R" SOURCE RESISTANCE (k ohms)
I, FREQUENCY (kHz)
(VeE
/
/
V
/ 1/
'/ 1/
'\
=>
u::
'"
'"~
'i
/
20
40
100
h PARAMETERS
1.0 kHz. TA
= 10 Vdc.f =
= 25°C)
FIGURE 10 - OUTPUT AOMITIANCE
FIGURE 9 - CURRENT GAIN
100
300
70
200
100
v
--
V
/
/
./
70
~
50
70
30
0.1
5.0
0.2
03
0507
10
20
3.0
50 7.0
0.1
10
02
0.3
0.5 0.7
1.0
2.0
Ie, COLLECTOR CURRENT (mA)
Ie, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-9
3.0
5.0
0.7
10
..
2N3905, 2N3906
FIGURE 12 - VOLTAGE FEEDBACK RATIO
FIGURE 11 - INPUT IMPEDANCE
20
!
"'-
10
10
"-
7.0
1:$
'" 5.0
"
o
~
u
" i"-. "'-
~ 3.0
~ 2.0
~
-:-. 1.0
.c 7.0
•
"-
S 50
7.0
~
3.0
~
~ 20
"
"-
~
11.0
05
I'- ~ _V . . .
0.7
0.3
0.2
0.1
02
0.3
0.5 0.7 1.0
20
ie . COLLECTOR CURRENT (rnA!
3.0
50
0.5
0.1
7.0 10
0.2
2.0 3.0
0.5 0.7 1.0
ie. COLLECTOR CURRENT (rnAl
0.3
5.0 7.0
STATIC CHARACTERISTICS
FIGURE 13 - DC CURRENT GAIN
2.0
TJ _I
ffi
N
::;
1.0
+25 C
~
0.7
wc
o
I
--
<1
~
0.5
z
~
a
0:
1.0V
VeE
r--..
l
«
~
z
-
+12~OC
,
.......
",,,
~
0.3
u
o
~
~
0.2
~
~
O. 1
0.1
0.2
0.5
03
0.7
1.0
2.0
20
5.0
7.0
10
3.0
ie . COLLECTOR CURRENT (mAl
30
50
70
100
~
200
FIGURE 14 - COLLECTOR SATURATION REGION
1.0
ic= 1.0 rnA
\
lOrnA
2\.
o
0.01
""- r--
r0.02
0.03
0.05
0.07
0.1
\
"1'\
\
""
....
.....
f-
0.5
0.2
0.3
I,. BASE CURRENT (mAl
07
1.0
t-....
-2.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-10
100~
\
30 rnA
\
6
~J l2~o~
\
\
3.0
5.0
7.0
10
10
2N3905, 2N3906
FIGURE 15 -
"ON" VOLTAGES
1.0
TJ
~
WC
VIEI"'I@ lell,
FIGURE 16 -
V,,@VeE
!2..
>
.§
1.0 V
0.5
five for VeE1 ... )
~
~
::l
u
.
....
o
~ O. 6
to
II
O.4
V
VeEI,,'1 @ lell,
IIII
~
'j -( LH-'"
III
1.0
2.0
50
5.0
10
20
Ie. COlLECTOR CURRENT ImAl
..-
,?-l.S
11..J...+-
o
200
15rCITOj2n
I
I
-2. 0
100
20
40
I
60
80 100 120 140
Ie. COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-11
P-
(}V1forV1EI •• t)
ill
....
10
rH-
+2J,c 'TO ~ d5'~
"
!;;
~ -1.0
0.2
V
~J.-"
55'C TO +25'C
I
I
~ -0 .5
>'
0
+25'C TO +l25'C
~
W
~
I
I
u
-H:t::mr
o.8
TEMPERATURE COEFFICIENTS
10
~ 10~
160
180 200
•
2N4123
2N4124
MAXIMUM RATINGS
Symbol
2N4123
2N4124
Unit
Collector-Emitter Voltage
Rating
VCEO
30
25
Vdc
Collector-Base Voltage
VCBO
40
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
625
5.0
mW
mWI'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.5
12
Watt
mWI'C
TJ, Tstg
-55to +150
'c
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
.:~
1 Emitter
Symbol
Max
Unit
GENERAL PURPOSE
TRANSISTORS
Thermal Resistance, Junction to Case
RIIJC
83.3
'CIW
NPN SILICON
Thermal Resistance, Junction to Ambient
RIIJA
200
'CIW
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IE = 0)
Vdc
V(BR)CEO
2N4123
2N4124
Collector-Base Breakdown Voltage
(lC = 10 ,.,Adc, IE = 0)
30
25
-
40
Vdc
V(BR)CBO
30
-
V(BR)EBO
5.0
-
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
-
50
nAdc
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
50
nAdc
2N4123
2N4124
Emitter-Base Breakdown Voltage
(IE = 10 ,.,Adc, IC = 0)
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 2.0 mAde, VCE
(lC
= 50
mAde, VCE
hFE
=
1.0 Vdc)
2N4123
2N4124
50
120
150
360
=
1.0 Vdc)
2N4123
2N4124
25
60
-
-
Collector-Emitter Saturation Voltage(1)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
-
0.3
Vdc
Base-Emitter Saturation Voltage(1)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.95
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
100 MHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
100 kHz)
fT
2N4123
2N4124
Collector-Base Capacitance
(IE = 0, VeB = 5.0 V, f = 100 kHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vdc, f
250
300
-
Cobo
-
4.0
pF
Cibo
-
8.0
pF
Ccb
-
4.0
pF
50
120
200
480
hfe
=
1.0 kHz)
2N4123
2N4124
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-12
MHz
-
2N4123, 2N4124
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted)
Characteristic
Symbol
Current Gain - High Frequency
(lC ~ 10 mAde, VCE ~ 20 Vde, I ~ 100 MHz)
Min
Max
Ihlel
(lC ~ 2.0 mAde, VCE ~ 10 V, I ~ 1.0 kHz I
(IC ~ 2.0 mAde, VCE ~ 10 V, I ~ 1.0 kHz I
Noise Figure
(lC ~ 100 !lAde, VCE ~ 5.0 Vde, RS ~ 1.0 k ohm,
I ~ 1.0 kHz)
-
-
2N4123
2N4124
2.5
3.0
2N4123
2N4124
50
120
200
480
-
6.0
5.0
NF
2N4123
2N4124
Unit
-
dB
(1) Pulse Test: Pulse Width ~ 300 p.s, Duty Cycle ~ 2.0%.
FIGURE 1 -
FIGURE 2 -
CAPACITANCE
10
200
7.0
'i
j
~
S.O
/
I-l.O
2.0
~
....
..... .....
r-
T
r-
1.0
01
02 Ol
O.S 071.0
2.0
l.O
SO 70 10
-
t"
"-
JO
!
.......
Cobo
~
70
50
Cibo
~
"-
"
Vee -lV
lelll 10
100
10
50
Vill""l
1.0
n./
i<~
~r-..
20
20 30 10
SWITCHING TIMES
" .....
100
_I
•
~
,I
= 0 5V
2.0
50
lO
REVERSE BIAS VOl IAGE IVOllSI
10
20
lO
50
100
200
Ie. COUECTOR CURRENT /mAl
AUDIO SMALL SIGNAL CHARACTERISTICS
IIOISE FlaURE
FlBURE 3 - FREQUEIICY VARlAnOIlS
2
I
I
~
o \
~ ~lc-lmA
'\
FlBURE 4 - SOURCE RESlSTAllCE
14
I
I
I I II
II
I A'e-~S'J
I
-1=lkHz
1
I~_I~ /1/
12
Ir-- SOURCE RESISTANCE ~ 200 !l
6' "-
4"
tt-
1,\
i'...
I 7"" ~
I.......
...
/ II
I
1
L
'f..
::-'--
L. SOURCE RESISTANCE
-ie-lOOp}.
SOURCE RESISTANCE = I k!l
Ic = 5O,.A
0.2
/1 .
10
•
0
0.1
(VCE - 5 Vde, T A - 25°C)
Bandwidth - 1.0 Hz
1/
SOURCE RESISTANCE - 200 !l
Ie - O.SmA
"- 1/
'\. Y'
r-
"
:-t5OO!l
1
0.4
J
1 II
/
10
20
40
o
0.1
100
I, FREQUENCY 1kHz}
0.2
)I
........
0.4
'"
/
/
/
/ ' Ie = 50pA
VIe-IOO~/
/
V
1.1
/
./
./
\.0
2.0
4.0
10
Rs, SOURCE RESISTANCE IIInI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-13
/
/
20
40
100
2N4123, 2N4124
h PARAMETERS
VeE
=10 V, f =1 kHz, T. =2S'C
FIIURE 6- DUTPUT ADMmAIICE
Fl8URE 5. - CURRENT SAIN
100
50
200
f- ~
V
120
I-- i""'"
.......
!I
10
~
5.0
'"j
50
./
V
2.0
30
0.1
0.2
1.0
0.5
1.0
5.0
2.0
10
0.1
5.0
10
Ie, COlLECTOR CURRENT (mA)
FIIURE 7-INPUT IIIIP£DANCE
20
2.0
1.0
0.5
0.2
Ie, COlLECTOR CURRENT ImA)
flSURE 1- VOlTACE FEEDBACK RAnD
10
........
I
""
10
"
'\.
7.0
~
'\.
5.0
\.
i'"
'\
.. 3.0
i'.
I"-
'\.
~
"-
~ 2.0
~
II
!'-
~
......... 1-0,
j 1.0
0.5
1/V
0.7
0.2
0.2
0.1
0.5
1.0
5.0
2.0
0.5
01
10
0.5
1.0
2.0
Ie, COlLECTOR CURRENT (mA)
0.2
Ie, COlLECTOR CURRENT (mA)
5.0
10
STATIC CHARACTERISTICS
FIGURE 9 - DC CURRENT GAIN
2.0
TJ
1.0
07
0.5
0.3
0.2
--
---
I
VeE
~
IV
........ t-....
~
........
i-""
-WC
~
r-...
-,..-
""
i"--..
I-- f--
....
:~
~t\.
0.1
0.2
o
~
~
01
--
~ )125 J
0.3
0.5
0.7
10
2.0
30
5.0
7.0
10
20
30
50
Ie, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-14
70
100
""" ~
200
2N4123, 2N4124
FIGURE 10 - COLLECTOR SATURUlDN REGION
I.0
TJ
~
2SoC
8
10mA
le= lmA
30mA
100 mA
\
\
6
I\...
4
'\
r-.....
2
0
.01
.02
.......
......
~
'--- f--
"'"-
.03
.05
.07
0.1
0.2
0.3
O.S
I,. BASE CURRENT ImAl
0.7
VI
1.0
I ~ "II' ~'1O
Tll'~ ~
'~IMII
-
Ve'r!@ltlj
o
1.0
0
IV
V.. @Ve,
i;
L.~...+1"
I
2.0
SO
S.O
10
20
Ie. COllECTOR CURRENT ImAl
7.0
~~~-
10
IlTIt1111 r
i-
-SsoC TO +2SoC
/
-1.0
--1. Sf.
I
I
-2.
100
L-
l- I- -.;:55"C
" "TO +2SoC
I
-0. S
)
O.2
S.O
" " I
fJvc for VeE I...)
O. 6
0.4
3.0
--
O. 5
H-1:P1f
0.8
2.0
1.0
II !II
TJ'~ Jsoc
1.0
FIGURE 12 - TEMP£RATURE COEFFICIENTS
FISURE " - "ON" VOlTAGES
1.2
r-...
200
oT
o
+~so~YI2S;C
~
fJv. torY'ElNtl
ro
~
w
1T1T
" " I
~
~
m
~
Ie. COllECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-15
~
m
~
•
2N4125
2N4126
MAXIMUM RATINGS
Symbol
2N4125
2N4126
Unit
Collector-Emitter Voltage
VCEO
30
25
Vde
Collector-Base Voltage
VCBO
30
25
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
200
mAde
Total Device Oissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12.0
mWrC
Rating
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
- 55 to
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
mW
Watt
+ 150
°c
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTORS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RBJA
200
°CIW
ELECTRICAL CHARACTERISTICS (TA
=
PNP SILICON
25°C unless otherwise noted.)
Symbol
Min
Max
2N4125
2N4126
V(BR)CEO
30
25
-
-
Vde
2N4125
2N4126
V(BR)CBO
30
25
-
Vde
V(BR)EBO
4.0
-
Vde
-
50
nAde
50
nAdc
2N4125
2N4126
50
120
150
360
2N4125
2N4126
25
60
-
Characteristic
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage( 1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
IIc = 1.0 mAde, IE = 0)
(lC = 10 pAde, IE = 0)
(IE = 10 pAde, IC = 0)
(VCB = 20 Vde, IE = 0)
ICBO
(VBE = 3.0 Vde, IC = 0)
lEBO
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 2.0 mAde, VCE = 1.0 Vde)
-
hFE
(lC = 50 mAde, VCE = 1.0 Vde)
-
Collector-Emitter Saturation Voltage(1)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
-
0.4
Vdc
Base-Emitter Saturation Voltage(1)
(lc = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.95
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
2N4125
2N4126
fr
MHz
200
250
-
Input Capacitance
IVBE = 0.5 Vde, IC = 0, f = 1.0 MHz)
Ciba
-
10
pF
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f = 1.0 MHz)
Ceb
-
4.5
pF
50
120
200
480
2.0
2.5
-
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
Current Gain - High Frequency
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Ihfel
2N4125
2N4126
Noise Figure
(lC = 100 !LAde, VCE = 5.0 Vdc, RG = 1.0 k ohm,
Noise Bandwidth = 10 Hz to 15.7 kHz)
(1) Pulse Test: Pulse Width", 300 p.see, Duty Cycle
-
hfe
2N4125
2N4126
NF
2N4125
2N4126
dB
-
= 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-16
-
5.0
4.0
2N4125, 2N4126
FIGURE 1 - CAPACITANCE
FIGURE 2 - SWITCHING TIMES
10
200
70
100
...... Cobo
E
f"'-.
0.2 03
0507 10
t.
20 30 10 7010
20
30
"
20
-
Vee
~
~
,/'
- .....-
3V
=
\0
./'\
t..
100 ::::: 'ell, 10
70
VIE(.tf] 05V
10
10
20 30
50
I
10
7-
~
30
!
:
01
~
70
50
~
Cibo
......
20
10
30
SO
100
200
•
Ie. COllECTOR CURRENT lmA)
RmJlS£ BlASI'/QLTS)
AUDIO SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE
FIGURE 3 - FREQUENCY VARIATIONS
VCE = 5.0 Vdc. T A = 25°C.
Bandwidth = 1.0 Hz
s.o r--r-~~TT-~-'-'''''''---r---''---r---n
FIGURE 4- SOURCE RESISTANCE
12
1/
t-f=11 kHz
10
;
Ie
80
60
!i1
~ 4.0
20
o
0.1
100
tI
/
'J
lie = 100 pi. ...,
/
/
V
I
Ii!l "1.0
IrnA
/
/
'\. ."'-.
/' /'
r--,. V
"'- b.
p-.....;
02
J
./
II: V
/
V
/ /'
V./ 'le=SOpl.
Ie = O.S rnA
I?
0.4
1.0
2.0
Rs. SOURCE
f. FREQUENCY 1kHz)
4.0
~ESISTANCE
10
Iklll
20
40
100
h PARAMETERS
Ve.
= lOV. f =1 kHz. T. =2S"C
FIGURE 5- CURRENT GAIN
FIGURE &- OUTPUT ADMITTANCE
100
70
{
~
V
30
~
20
~i
10
i
v
SO
./
/
./
.....
7.0
s.o
0.1
Ie. COLLECTOR CURRENT IrnA)
0.2
o.s
1.0
2.0
Ie. COLLECTOR CURRENT IrnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-17
s.o
10
2N4125, 2N4126
FIIIURE 8- VOLTAIIE FEEDBACK RATIO
FlIIURE l-INPUT IMPEDANCE
20
10
" I'-
10
7.0
~
~ S.O
i
•
i
i
.......
"
2. 0
• 1.0
I"
I
.......
f',
~j
~
•
"'
SO
!S
o.s
3.0
20
t\..
r-- -~ .....
.........
1.0
o. 7
0.2
0.1
S.o
2.0
O.S
1.0
Ie. COLLECTOR CURRENT ImAl
0.2
O.S
10
0.1
S.o
O.S
2.0
1.0
Ie. COLLECTOR CURRENT ImA J
0.2
10
STATIC CHARACTERISTICS
FIGURE 9 - DC CURRENT GAIN
2. 0
TJ
-
~ +12~OC
r-....
+2s oCI
0
I
IV-
Yel
I SsoCI
7
..........
5
......
"'
~
,~~
3
1\ ~
2
~
~
O. I
0.1
0.2
o.s
0.3
0.7
2.0
1.0
20
3.0
S.O
70
10
Ie. COllECTOR CURRENT ImAl
so
30
,
FlBURE 10 - COLLECTOR SATURATION REBION
,
1.0
\"{
I
I
le= lmA
~30mA
10mA
TJ
= 2So~
loomA
"~
\.
.01
200
\
6
o
~
100
70
"'- 1':'-
~
to-.
.02
1\
.........
1"-.....
.03
.05
.07
0.1
O.S
0.2
0.3
I,. BASE CURRENT ImAl
0.7
1.0
l"- t - 2.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-18
3.0
S.O
7.0
10
2N4125, 2N4126
FIGURE 12 - TEMPERATURE COEFFICIENTS
FIGURE 11 - "ON" VOlTAGES
1.0
1.0
VIIIMt,@le/I,= 10 ~~
TJ = 2S'C
~
.1
V,,@Vel
I
I
I
O.S
9vc for VeIl""
v
+2S'C TO +l2S'C
SS'C TO +2S'C
0
I T"t+I
O.6
V
O.2
J
III
1.0
2.0
-1.S
ll...l-t-'
S.O
10
20
Ie. COLLECTOR CURRENT ImAl
so
-2
100
+2~'C ITO ~ I~S'~ ..
'i "( J-H--
-1.0
VelIMt, @'ell, = 10
" If
0
-0. S
J
O. 4
200
9v,forVUI""
...
, Sj'C{O ,2j'C,
I
I
II
o
20
40
60
80 100 120 140
Ie. COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-19
,/
.... i-'"
I
160
180 200
•
2N4264
2N4265
MAXIMUM RATINGS
Characteristic
Symbol
2N4264j2N4265
j
Unit
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
6.0
Vde
IC
200
mAde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
350
2.8
mW
mWf'C
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
1.0
8.0
Watts
mWf'C
TJ, Tstg
-55to +150
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
15
12
Vde
30
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Vde
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIIJC
83.3
·CIW
Thermal Resistance, Junction to Ambient
R8JA
200
·CIW
Characteristic
I
GENERAL PURPOSE
TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
15
12
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IE = 0)
V(BR)CEO
2N4264
2N4265
Vde
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
20
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
6.0
-
Vde
-
0.1
10
100
Base Cutoff Current
(VCE = 12 Vde, VEB(off)
(VCE = 12 Vde, VEB(off)
= 0.25 Vde)
= 0.25 Vde, TA =
Collector Cutoff Current
(VCE = 12 Vde, VEB(off)
= 0.25 Vde)
IBEV
100·C)
ICEX
pAde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE
(lC
=
(lC
= 30
10 mAde, VCE
mAde, VCE
(lc
=
(lC
= 200
100 mAde, VCE
mAde, VCE
hFE
=
1.0 Vde)
2N4264
2N4265
25
30
-
=
1.0 Vde)
2N4264
2N4265
40
100
160
400
=
1.0 Vde)
2N4264
2N4265
90
1.0 Vde)(l)
2N4264
2N4265
30
55
1.0 Vde)(l)
2N4264
2N4265
20
35
-
-
0.22
0.35
=
=
40
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 100 mAde, IB = 10 mAde)(l)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lc = 100 mAde, IB = 10 mAde)(l)
VBE(sat)
-
-
Vde
Vde
0.65
0.75
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-20
-
0.8
0.95
2N4264, 2N4265
ELECTRICAL CHARACTERISTICS (continued) (TA
~
25°C unless otherwise noted.)
I
Symbol
Min
fT
300
-
MHz
Cibo
-
8.0
pF
Ceb
-
4.0
pF
(VCC ~ 10 Vde, VEB(off) ~ 2.0 Vde,
IC ~ 100 mAde, ISl ~ 10 mAde) (Fig. 1, Test Condition C)
td
-
8.0
ns
tr
15
ns
VCC ~ 10 Vde, (lC ~ 10 mAde, for t s)
(lC ~ 100 mA for tf)
ISl ~ IS2 ~ 10 mAde) (Fig. 1, Test Condition C)
ts
-
20
ns
tf
-
15
ns
Characteristic
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc ~ 10 mAde, VCE ~ 10 Vdc, f ~ 100 MHz)
Input Capacitance
(V BE ~ 0.5 Vde, IC
0, f
~
1.0 MHz)
Collector-Sase Capacitance
(VCS ~ 5.0 Vde, IE ~ 0, f
~
1.0 MHz)
~
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Turn-On Time
(VCC ~ 3.0 Vde, VES(off) ~ 1.5 Vde,
IC ~ 10 mAde, IBl ~ 3.0 mAde) (Fig. 1, Test Condition A)
ton
-
25
ns
Turn-Off Time
(VCC ~ 3.0 Vde, IC ~ 10 mAde,
ISl ~ 3.0 mAde, IS2 ~ 1.5 mAde) (Fig. 1, Test
Condition A)
toff
-
35
ns
Storage Time
(VCC ~ 10 Vde, IC ~ 10 mA
ISl ~ IS2 ~ 10 mAde) (Fig. 1, Test Condition S)
ts
-
20
ns
Total Control Charge
(VCC ~ 3.0 Vdc, IC
Condition A)
QT
-
80
pC
(1) Pulse Test: Pulse Width
~
~
300 ILS, Duty Cycle
10 mAde, IS
~
~
mAde) (Fig. 3, Test
2.0%.
FIGURE 1 - SWITCHING TIME EQUIVALENT TEST CIRCUIT
CO~~~ON
A
•
C
if I
Ie
Vee
rnA
10
10
100
V
3
10
10
I,
!l
Ie
!l
3300
560
560
270
960
96
Csr ..... !
pF
4
4
12
VU(oHI
V
15
20
V,
V
1055
6.35
-j¥,
Vee
V'7i\ v'-n
o-J.:lt----c-- oY-j-lc--
V,
V,
V
V
4.15 1070
465 655
4.65 655
VU(Dffl
I
~
I
V2
~<2ns
<2M
PULSE WIDTH It,1
~
300 ns
DUTY CYCLE
~
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-21
2%
R,
•
2N4264,2N4265
CURRENT GAIN CHARACTERISTICS
FIGURE 2 - MINIMUM CURRENT GAIN
100
2N4264
0
Ve.~
IV
-
TJ = 12S'C
--
..-'"'"
120
I--
r- t-.
r--
2S'C
---
I-- I-""
~
-IS'C
~ f-
-SS'C
-r--
~ r-
~
10
1.0
2.0
S.O
7.0
10
20
so
30
~~~
--I"'-r--
-
rot---
70
~
"'
"
-.......... :--..,
-..........
200
100
Ie, COLLECTOR CURRENT tmAl
200
- r-
TJ = 12S'C
.. 100
~
I
I-- l- I-"
IS SO .-""
1
..-
'"'"
:..- f-"""
V
:..-
o
20
.....
-- v---
0l..--""
2S'C
lS'C
-
~
:""'0
r--;;;
c:::--
l- I-"
I---
2"4265 t -
Ve • = IV
~
fl:~
t-.
-SS'C
I-t-
""'"
V
"'-..'"
....... r--"
r--- r--b ~ ~'
~
.-""
1.0
2.0
3.0
S.O
7.0
20
10
70
100
........
~
200
Ie, COLLECTOR CURRENT tmAl
FIGURE 3 -
QT
TEST CIRCUIT
FIGURE 4 - TURN·OFF WAVEFORM
270 Il
"""~
j t:--
FALL TIME
70
-
~
50
~
'\
"
l-
....
le/II-I~
'\..,
I'-
70
---
---
......-
-
r-,:- r10
50
>--
III =111
. :e/:,~I~
'" "
100
.!!'
100
lOll
....
r-..... ,,~.
0
V)
70
FIGURE 8 -
ts' = ts - Vatf
lSI = IS2
ICIIS = 10 to 20
...........
c
~
~
50
IC, COLLECTOR CURRENT (rnA)
300
200
--- -..- ~
5.0
Ic, COLLECTOR CURRENT (rnA)
FIGURE 7 -
I-
-"
.'\
10
VCC 30V - I IIdls = 10
~ ~vtr
tf
'\.
5.0
'"
~~
30
:; ,L
"-
7.0
70
50
I
tr
'"
6.0
1\
,
~
III
IC
IC
IC
IC
FREQUENCY EFFECTS
II II 11111 II
=
=
=
=
NOISE FIGURE
VCE = 10 Vde, TA = 25°C
Bandwidth = 1.0 Hz
11111 II II II
f
RS = OPTIMUM
SOURCE
RESISTANCE
1.0 rnA, RS = 150n
500 !
'"u::
~
~
V)
V)
z
..:
z
6.0
is
z
..:
z
4.0
2.0
0.01 0.02
~
0.2
4.0
2.0
""III
0.05 0.1
0.5
1.0
2.0
5.0
10
20
50
1111
.I
1111
100
1/
.)(
k"
SOURCE RESISTANCE EFFECTS
~ 11 olHl1
B.O
'"u::
is
FIGURE 10 -
10
II
I
'"
IC = 50 !a:
)0
~
50
::0
:I:
20 k
Q
k- I-r--
I-- I-
100
a:
=>
u
-
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
1<'
..
~
~
""
;iii
u
10
).0
5.0
""'~
" ~......
1.0 k
r--..
5.0 ).0
w
'"~
0
........
f'.
500
10
0.2
0.1
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
IC. COLLECTOR CURRENT (rnA)
VOLTAGE FEEDBACK RATIO
FIGURE 14 -
3.0
~
r.....
2.0
V
l"'-
V
r-... r-.... I'
1.0
0.)
0.5
~
0.3
0.2
0.1
0.2
0.3
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
1
OUTPUT ADMITTANCE
50
u
z
20
:E
0
10
~
0.5
0.7
1.0
~V
0
..
P
L.oII
2N4401 UNIT 1
2N4401 UNIT2
2N4400 UNIT 1
~ 2N4400 UNIT 2
5.0
=>
2.0
.........
r- """.....
,...
V
r-":i-"
I
1.0 ~ I-""
2.0
"'"
~
I!Q
c(
1<'
>-
--
1-::::1'" ~
w
>-
~
>
.:
.:--
100
53
~
~
:-....
2.0 k
E
I II I I
0.3
FIGURE 13 -
~
./'
<5
IC. COLLECTOR CURRENT (rnA)
~
0
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
L
t""'t'-
:t 5.0 k
30
~
INPUT IMPEDANCE
3.0
5.0 ).0 10
0.1
0.2
0.3
0.5
IC. COLLECTOR CURRENT (rnA)
0.7
1.0
2.0
I_Ll
3.0
5.0 7.0
10
IC. COLLECTOR CURRENT (rnA)
STATIC CHARACTERISTICS
FIGURE 15 -
3.0
I
z
~
>z
~
=>
u
1.0
~
0.7
~
O. 5
LUll
-VCE = 1.0V
",VCE = 10V
2.0
1--
-
,.
--
1---
o
i
-I--~
---- -
-f-
.-
I~
1--
o.2
0.1
0.2
0.3
--
...
j~l--
~
-f- j...-
~t-
I-
r-rJ
= 125°C
·~t-
-- - -- -
-
25°C
'Lll
~j
,..
0.5
0.7
1.0
2.0
3.0
-I-
- rt-
---
1"" ....
-
.~
==
~C
I--~
1--- i--" 1---
o.3
DC CURRENT GAIN
I I I
5.0
).0
10
20
30
50
)0
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-28
100
..
I""
~
r....
200
....
~
......
300
~.
500
2N4400, 2N4401
FIGURE 16 - COLLECTOR SATURATION REGION
1.0
\
0.6
IC
~
~
~
:::I
0
u
w
-5;!
25"C
1
~
'"~
~
~
LOrnA
lOrnA
100 rnA
SOOmA
I'..
...... ,....
\
0.4
\
\
0.2
\.
....... to-.
0.02
0.Q1
0.03
0.05
0.07
r'\
I"- ~
0.1
"-
-
r-
0.2
0.3
0.5
0.7
1.0
2.0
~~
I-t3.0
5.0
7.0
10
20
30
50
IB' BASE CURRENT (rnA)
FIGURE 17 - "ON" VOLTAGES
1.0
I-
T~ ~12!oJ
11111
FIGURE 18 - TEMPERATURE COEFFICIENTS
1111111
0.6
~
'"~
~
(,.-
~
VBE@Jc~111I1Ot I
~
-0.5
g
I-
~
U
0.4
V
0.2 f-
II
~ 10
r-t- 1-1.VCE("t) @ lellB
I I I I
1111111
0.1
II I
IJVc lor VCE("t)
+-
11111
~
111111
VeE("t) @ lellB ~ 10 .... 10-''''
o.a
~
0
+0.5
0.2
0.5
1.0
u
~
-1.5
-2.0
lJVa for VBE
I-
II I
2.0
-1.0
~
0
''''
11111111
-2.5
5.0
10
20
50
100
200
500
IC, COLLECTOR CURRENT (rnA)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50 100
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-29
200 500
•
2N4402
2N4403
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
1.5
12
Watt
mWrC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
C1
'
~ 23
":~d\'~.
~
1 Emitter
e.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
GENERAL PURPOSE
TRANSISTORS
Thermal Resistance, Junction to Case
R/lJC
83.3
°CIW
PNP SILICON
Thermal Resistance, Junction to Ambient
R/IJA
200
°CIW
Characteristic
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
(lC
=
(lC
=
1.0 mAde, IB
= 0)
= 0)
= 0)
0.1 mAde, IE
= 0.1 mAde, IC
Base Cutoff Cu rrent (VCE = 35 Vde, VBE = 0.4 Vde)
Collector Cutoff Current (VCE = 35 Vde, VBE = 0.4 Vde)
Emitter-Base Breakdown Voltage
(IE
V(BR)CEO
40
V(BR)CBO
40
V(BR)EBO
Vde
5.0
-
IBEV
-
0.1
pAde
ICEX
-
0.1
pAde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE
(lC
=
1.0 mAde, VCE
(lc
=
10 mAde, VCE
(lC
=
150 mAde, VCE
(lC
= 500
-
1.0 Vde)
2N4403
30
=
1.0 Vde)
2N4402
2N4403
30
60
2N4402
2N4403
50
100
-
50
100
150
300
20
-
=
mAde, VCE
hFE
=
1.0 Vde)
=
2.0 Vde)(1)
2N4402
2N4403
=
2.0 Vde)(1)
Both
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
-
-
-
Vde
0.4
0.75
Vde
0.75
-
0.95
1.3
150
200
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 20 mAde, VCE = 10 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
=
Emitter-Base Capacitance
(VBE = 0.5 Vde, IC = 0, f
=
Input Impedance
(lC = 1.0 mAde, VCE
=
t,2N4402
2N4403
MHz
Ceb
-
8.5
pF
Ceb
-
30
pF
140 kHz)
140 kHz)
10 Vde, f
=
ohms
hie
1.0 kHz)
2N4402
2N4403
750
1.5k
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-30
7.5k
15k
2N4402, 2N4403
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted)
Characteristic
Voltage Feedback Ratio
()C ~ 1.0 mAde, VCE
10 Vde, I
~
1.0 kHz)
Small-Signal Current Gain
()C ~ 1.0 mAde, VCE ~ 10 Vde, I
~
~
1.0 kHz)
Output Admittance
()C ~ 1.0 mAde, VCE
~
1.0 kHz)
Symbol
Min
Max
Unit
h re
0.1
8.0
X 10-4
30
60
250
500
1.0
100
"mhos
hoe
~
10 Vde, I
-
hie
2N4402
2N4403
SWITCHING CHARACTERISTICS
2.0 Vde,
15 mAde)
td
-
15
ns
Ir
20
ns
(VCC ~ 30 Vde, IC ~ 150 mAde,
IBl ~ IB2 ~ 15 mAde)
ts
-
225
ns
II
-
30
ns
(Vce ~ 30 Vde, VSE
IC ~ 150 mAde, ISl
DelavTime
Rise Time
Storage Time
Fall Time
~
~
•
(1) Pulse Tesl: Pulse Width", 300 !'S, Dutv Cycle'" 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE I - TURN·ON TIME
FIGURE 1- TURN·OFF TIME
-JOV
~
'30V
1 __
~
<2ns
200H
<1O",
+14V
-16V
I
-r-
lk!l
\
I Cs' < IOpF
I
>-----~Ar--~--~~
o
_.L_
-T-
iCs',IOPF
I
-+/
I+-
I
16V
1010100,.£5 DUTY CYCLE
-..1
Scope rise lime 4ns
°Total shunt capacitance of lest)lg
connectorsandoscilioscope
2%
f.-
10 to 100
I~s.
DUTY CYCLE
2%
TRANSIENT CHARACTERISTICS
--
2S'C
- -
-
100'C
FIGURE 3 - CAPACITANCES
30
20
~
Ii!
I
--
--
FIGURE 4 - CHARGE DATA
10
7.0
I
r----r--.
C.b
/
3.0
I'-...
10
=
Vee 30V
lell, 10.=
S.O
'i1
I
7.0
<.>
C,b
S.O
d
,
2.0
.,
1.0
0.7
-
-
O.S
i'-
a,
-
0.2
2.0
0.1
0.1
0.2 0.3
O.S 0.7 1.0
2.0
3.0
SO 7.0 10
V
~
10
20 30
REVERSE VOLTAGE IVOLTSI
20
30
50
70
100
Ie, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-31
/
'V
",
0.3
3.0
,
200
300
SOD
2N4402,2N4403
FIGURE 5 - TURN·ON TIME
FIGURE 6 - RISE TIME
100
70
so
-'
70
'\.
I'\..
'\.
'\
1
...
!
10: --
lell,
I' ,
100
\
30
, "-
20
"-
1'\
'"
~
""
~
r-,.
10
20
. .V V
"- r--..
10
,I
7.0
5.0
so
30
r-
~
V
I"--
tt-
~
,
7.0
5.0
~
t,@Vee-30V
- ft,@Vee- IOV _
fI,,@V"loHl-2V _
I,,@VIEI.HI-O
"~
10
50
\
30V
Vee
Ie/I,-IO
''l!
70
100
200
300
10
500
20
30
SO
Ie, COLLECTOR CURRENT ImAl
70
200
100
300
500
Ie, COLLECTOR CURRENT ImAl
FIGURE 7- STORAGE TIME
200
~
100
!
70
:;;
SO
...
I
J
\ \ I
-
r-
Ie/I, -10-
,,
lell, - 20
r---- -
-
--
~ '1
t ...
\
\ \
1"-1,,
,
\\'
t,'=t.-~t,
,\\
30
\.~
\;
20
10
20
30
50
70
100
200
500
300
Ie, COLLECTOR CURRENT ImAl
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
FIGURE 8 -
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
FIGURE 9 -
FREQUENCY EFFECTS
10
10
\
SOURCE RESISTANCE EFFECTS
Uk~
j
1\
1\
\
f-
!\I\
~
/
Ic- lmA,R,-430n
Ie = SOO p)., R, -'560 n
le-SOp).,R.-2.71
5.0
~
~
'"
2.0
~
1.0
l;i!
0.5
~
.......
FIGURE 13 -
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
V
1""--
('...
i
j
/'
31;1
100
;;;
~
20
~
10
~
./
r-
<:>
~i
0.2
0.3
0.5 0.7
1.0
5.0
7.0 10
OUTPUT ADMITTANCE
2.0
3.0
5.0
v
~
"-
5.0
1.0
0.2
3.0
50
2.0
0.1
0.1
2.0
~
2N4402 UNIT 2
~
~
1.0
SOO
V
('...
0.5 0.7
Ie. COLLECTOR CURRENT (mAde)
20
:"
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2 ,
50k
500
--
L:.
0.1
7.0 10
Ie. COLLECTOR CURRENT (mAde)
~
0.2
0.3
0.5 0.7
1.0
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT I
2N4402 UNIT 2
2.0
3.0
5.0
7.0 10
Ie. COllECTOR CURRENT (mAde)
STATIC CHARACTERISTICS
FIGURE 14 3.0
~-Ve.~IV
2.0
z
;ji
ffi
g;
B
1.0
~
0.7
Ij
0.5
1,1- ifs~
1---- Ve• 10V
-- l--
-
r-I-"
--
- 1-1-
1-
~ 1-1-
-
DC CURRENT GAIN
l
-r-
-
-11--
- 25'C
-
-
- r--
-
r--
-
1-- -
- -
1--
-
~ e:::-,
l - I-"
-
55'C
-
I~
-,
-
~
L,
~
~
"
0.3
\\
~ '\
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
Ie. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-33
100
200
300
500
..
2N4402,2N4403
FIGURE 15 - COLLECTOR SATURATION REGION
1.0
!S
0.8
~
0.6
~
g
1\
\
le- lmA
10mA
lOOmA
!::
•
i.
~
500mA
1\
ffi
'\
0.4
\.
0.2
0.005
r-
........
0.01
0.02
0.03
0.05 0.07
0.2
........ -.
"' -
--
0.1
"-
.......
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20
10
30
50
I,. BASE CURRENT (mAl
FIGURE 17 - TEMPERATURE COEFFICIENTS
FIGURE 16 - "ON" VOLTAGES
1.0
-
"_II ~III
TJ - 25 C
0.8
1/
+0.5
11111111 I
I I I I I 11111 I
VOI(N'I@le/I,- 10
0.6
8ve lor VeEIM'1
P
~
I111III 1
VIEI,.I@VeE - 10 V
===1'"
-0.5
~ -1.0
~
~
1111111
j " ""' ,
....
, , "" 1111-1--
i-
I
Vr-
§
~
0.4
u
0.2
V
-1.5
....
-2.0
~~~~:L
VeEIM'I@le/I,-IO
11111111
-2.5
0.1 0.2
0.5
1.0
2.0
5.0
10
2D
50
lOll
200
0.1 0.2
500
0.5
1.0
2.0
5.0
10
2D
Ie. COLLECTOR CURRENT ImAl
Ie COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-34
50
100 200
500
2N4409
2N4410
MAXIMUM RATINGS
Symbol
2N4409
2N4410
Unit
Collector-Emitter Voltage
Rating
VCEO
50
80
Vdc
Collector-Base Voltage
VCBO
80
120
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
250
mAde
Total Device Dissipation @ TA = 25°C
Derate a bove 25°C
PD
625
5.0
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
mWrC
-65 to +200
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ. Tstg
CASE 29-04. STYLE 1
TO-92 (TO-226AAI
mW
Watts
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
R8JC
83.3
°C/W
Thermal Resistance, Junction to Ambient
R8JA
200
°C/W
AMPLIFIER TRANSISTORS
NPNSIUCON
Refer to 2N5550 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
50
80
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 500 pAdc, VBE = 5.0 Vdc, RBE
2N4409
2N4410
= 8.2
2N4409
2N4410
Collector-Base Breakdown Voltage
(lc = 10 pAdc, IE = 0)
80
120
V(BR)CBO
2N4409
2N4410
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
BO
120
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 100°C)
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
ICBO
5.0
-
-
Vdc
Vdc
pAdc
-
-
0.01
1.0
0.01
1.0
lEBO
-
0.1
pAdc
hFE
60
60
-
-
400
2N4409
2N4409
2N4410
2N4410
Emitter Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
Vdc
V(BR)CEX
kohms)
Vdc
-
ON CHARACTERISTICS
DC Current Gain
(lc
(lc
=
=
1.0 mAde, VCE = 1.0 Vdc)
10 mAde, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage
(lc
Base-Emitter Saturation Voltage
=
Base-Emitter On Voltage
(lc
=
(lc
=
= 0.1 mAde)
= 0.1 mAde)
1.0 mAde, IB
1.0 mAde, IB
1.0 mAde, VCE
=
5.0 Vdc)
VBE(sat)
-
VBE(on)
-
VCElsat)
0.2
Vdc
O.B
Vdc
,0.8
Vdc
300
MHz
SMAll-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product(2)
(lc = 10 mAde, VCE = 10 Vdc, f = 30 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
140 kHz, emitter guarded)
Emitter-Base Capacitance
(VBE = 0.5 Vdc, IC = 0, f
=
140 kHz, collector guarded)
60
Ccb
-
12
pF
Ceb
-
50
pF
(1) Pulse Test: Pulse Width", 300 ".., Duty Cycle", 2.0%.
(2) IT = Ihfel" ftest·
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-35
•
2NS086
2NS087
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
50
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
Collector Current -
•
Continuous
IC
50
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
PD
625
5.0
mW
mWI"C
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
1.5
12
Watt
mWI"C
TJ, Tstg
-55 to +150
"C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
"CIW
Thermal Resistance, Junction to Ambient
ROJA
200
"CIW
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTORS
Characteristic
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
50
-
Vde
Collector-Base Breakdown Voltage
(lc = 100 !LAde, IE = 0)
V(BR)CBO
50
-
Vde
-
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
(VCB = 35 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
nAde
-
10
50
-
50
2N5086
2N5087
150
250
500
800
(lc = 1.0 mAde, VCE = 5.0 Vde)
2N5086
2N5087
150
250
(lC = 10 mAde, VCE = 5.0 Vde)(2)
2N5086
2N5087
150
250
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !LAde, VCE = 5.0 Vde)
-
hFE
-
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.3
Vde
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vde)
VBE(on)
-
0.85
Vde
Current-Gain - Bandwidth Product
(lC = 500 !LAde, VCE = 5.0 Vde, f = 20 MHz)
·fT
40
-
MHz
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f = 100 kHz)
Ceb
-
4.0
pF
150
250
600
900
-
3.0
2.0
-
3.0
2.0
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(lc = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
Noise Figure
(lC = 20 !LAde, VCE = 5.0 Vde, RS = 10 k ohms,
f = 10 Hz to 15.7 kHz)
(lC = 100 !LAde, VCE = 5.0 Vde, RS = 3.0 k ohms,
f= 1.0 kHz)
-
hfe
2N5086
2N5087
NF
dB
2N5086
2N5087
-
2NS086
2N5087
-
(2) Pulse Test: Pulse Width"" 300 p.S, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-36
2N5086,2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc. T A = 25°C)
FIGURE 1 -
FIGURE 2 -
NOISE VOLTAGE
0
10
7. 0
5. 0
Bandwidth = 1.0 Hz
RpO
0-
7. 0
~
5.
w
'"
~
~
3.0
w
$
2.
IIII
~ r-
~
~
IC-IO"A
100"A
300 A
o LOrnA""";:::'
Bandwidth - 1.0 Hz
RS~ ~
3. 0
~
2.Of'...
~
IC
.......
!
a
30"A
:-
--
O. 7
50
1.0-
100~
oz o. 5
o.2
20
!
~O"~
I'-..
1. 0
1.0mA
--w.
r---.
.E o. 3 .........
1. 0
10
NOISE CURRENT
100
500
200
1.0 k
2.0 k
5.0 k
---
10 "A
I
10
10 k
30"A
I"-
1
50
20
100
t, FREQUENCY (Hzl
500
200
1.0k
2.0k
5.0k
10k
t, FREQUENCY (Hzl
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc. T A = 25°C)
FIGURE 3 -
FIGURE 4 -
NARROW BAND. 100 Hz
1.0M
500 k
Bandwidth
= 1.0 Hz -
200
in 200 k
Ci)
100 k
w
50
"z
20
'"5
~ 100
0
~ SDk
'"~
10
~ 5.0
~ 10k
_ 5.0 k
w
w
1.0 dB
~ 2.0k
=>
~
~ 2.0
2.0dB~
loOk
~
500
3.0 dB
200
100
5.0 dBH=1
10
NARROW BAND. 1.0 KHz
1.0 M
500 k
20
30
50
70
200
100
300
;2
50 0
20 0
10 0
10
500 700 1.0 k
IC, COLLECTOR CURRENT ("AI
FIGURE 5 -
~
Z; 1.0 k
.5.Odii:
20
o
30
10
In ,nn
,nn
700 . k
IC, COLLECTOR CURRENT ("AI
WIDEBAND
1.0 M
500 k
10 Hz to 15.7 kHz-
Noise Figure is Defined as:
~ 200k
e
_
ren2 + 4KTRS + In2Rs2] 1/2
NF - 20 1091O
4KTRS
lOOk
~
SDk
~
20 k
l
en
0.5 dB
~ 5.0k
200
100
10
In
1.0 dB
;:, 2.0 k
~ l.Ok
~ 500
2.0 dB
K
T
RS
3.0 dB
20
30
50
70
100
200
300
5.0 dB
~
500 700 1.0 k
Noise Voltage of the Transistor
referred to the input. (Figure 3)
Noise Current of the transistor
referred to the input (F igu re 4)
Boltzman's Constant (1.38 x 10- 23 j/oK)
Temperature of the Source Resistance (OK)
Source Resistance (Ohms)
IC, COLLECTOR CURRENT ("AI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-37
•
2N5086,2N5087
TYPICAL STATIC CHARACTERISTICS
FIGURE 6 -
DC CURRENT GAIN
40 0
...0
I
f-:::: ~ p
-.....
~
-55°C
- +-
I-
1.-: ::;;-
"
r-
t-
- - - VCpl.OV
VCE=10V
l-'""""
Oi====-
j
40
0.003 0.005
I [j
II
II
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
r-
::--...
-
"'""'"-=
MPS3906
0
•
~;;...
P
~p
25JC
-
1=
--- - "--
TJ ·'125 oC
I
1.0
1.0
30
5.0 7.0
10
10
30
50
70
100
IC, COLLECTOR CURRENT (mA)
FIGURE 7 -
COLLECTOR SATURATION REGION
go 10
t~l; ~50~
lOrnA
Ic=1.0mA
50 mA
!
~
'"0
~
~ O.4
~
>
~~~~~~~'~--~~O"~~~--~'--r-~
~7-"1"=--t~-t"""= '"O"~ ':::::l;~-"F~-r---j
100 "A
0
u
o. 2
53
i"-
0
0.002 0005 0.01 0.02
0.05 0.1
0.1
0.5
1.0
1.0
50
10
10
5.0
IB, BASE CURRENT (rnA)
FIGURE 9 -
2
'3
o
2:.
....
"'~
'"o
I
I
1. 0
l~
0.2
0.5
_
; -0.8
~
1.0
20
5.0
10
40
20
50
TEMPERATURE COEFFICIENTS
I 1,1111
15°C to 115°C
"'ave for VCE{sat:)-rtt--++++-t+rtt--++....
-H::J,f.1'f
.
]
'I
-.~ II ~t-H--+-++-tlH-l,Ht-_lt---l+J+t++++
I,
250C to 125°C
~_ -1.6 ~-- "-:-lLf
LUJWJ'++l-----+---H--tYJ~::::j...J..-t:l~P--+-j*
OVB or VBE
_+-550C to 250C
~-24H=mn1
1111 Jill
:i
I!
I--- VCE(sa,)@IC/IB· 10
0
0.1
35
1 J1
.B f-----f-t-I-+I++I++++__
I_-i-t--H-t-tttt-=:+l-"ll:±l+++++
o
I
i I! 1;11
I II Ulll
30
"Appliesforlc/ls- O. 4
~
I
!
0, B
>
FIGURE 10 -
~
TJ·250C
15
10
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
"ON" VOLTAGES
I.4
(i;'
-+--+--i---t=':7'''''f'--::;J
j
\100mA
0, 6
;;
8
COLLECTOR CHARACTERISTICS
.§ 80
1\
~o
~
Duty Cvcle..; 2 0%
;;{
~ O. 8
~
TA = 15°C
Pulse Width = 300 ps
MPS3906
~
ffi
FIGURE 8 100
100
0.1
IC, COLLECTOR CURRENT (mA)
0.2
051.02.0
5.0
10
IC, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-38
20
50
100
2N5086,2N5087
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 11 -
FIGURE 12 -
TURN·ON TIME
200
!
:e
;:
70
50
70 0
500
VCC =l.OV
lC/lS =10
TJ • 25°C
lOO
100
'"
20
.......
Id @VSE(olf) • 0.5 V........
10
7.0
5.0
1.0
2.0
l.O
5.0 7.0
10
-
20
!
200
~
100
r--....
70
0
Ir
~
FIGURE 13 -
t;
CURRENT·GAIN -
II
0
lO
50
10
1.0
70 100
2.0
3.0
g:
...c
.....
300
~z
:i\,
~
--
VCE'20~V
~V
200
FIGURE 14 -
BANDWIDTH PRODUCT
~J~IJoc I I
%
5.0V
I"---r--.
7. 0
~
r--..r--.,
w
~ 3.0
;5
u~
;;: 100
2. 0
500.5
0.7
2.0
1.0
5.0 7.0
l.O
10
20
lO
10
0.05
50
01
0.5
02
CAPACITANCE
Cob
.......... ........
FIGURE 15 0
1\
INPUT IMPEDANCE
g 7.0
~
5.0
ffi
3.0
MPSl900
hle~ 100
@lc-1.0mA
1.0
O. 7
O.5
E
0.5
1.0
0
0
:=:
30
...'"
"'
~ 20--
"
2.0
w
'-'
.3
...'"
~
10
J
7.0
5. 0
~
5.0
10
5.0
20
50
100
IC. COLLECTOR CURRENT (mA)
j
I
V
i
TA = 25°C
MPS390~.:.
10
20
50
'
,
V MPSl905
V
hfe"" 100
'@IC=1 0 mA
1/
..
%1
i-"
hfe'" 200
@lc=10mA
~l-f-+'
I'
l .0 ......
2. 0
0.1
0.2
........
0.2
2.0
OUTPUT ADMITTANCE
VeE'" 10 VdC;
f = 10kHz
::; 10 OF
MPSl906
hfe"" 200
@IC 1.0mA
~ 2. 0
O. l
O. 2
0.1
FIGURE 16 200
VCE = 10 Vdc
I =1.0 kHz
TA 25°C
II
",I'
0
1.0
VR. REVERSE VOLTAGE (VOLTS)
IC. COLLECTOR CURRENT (mA)
j
70 100
70
~
~~
50
lO
C,b
Z
...
z
20
-- "
"'"
-.. .....
5. 0
'-'
~
.t'
10
TJ = 25°C
...'"
z
~
5.0 7.0
IC. COLLECTOR CURRENT (mA)
0
::>
g
VCC l.O V
Ic/1S=10
lSI IS2
Tr 25 0 C
0
IC. COllECTOR CURRENT (mA)
500
-- r-
Is
lO 0
lO
~
TURN·OFF TIME
1000
500
I
r--~
0.5
1.0
2.0
5.0
10
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2·39
I !
r-'
20
50
100
•
2N5086,2N5087
FIGURE 17 - THERMAL RESPONSE
1.0
0.7
W
~
0.5
~
0.3
~3
«W
0.2
u;
~
0.5
0
"N
~ ~ 0.1
u;
~
>-
I-
l-
I0.02
0.0 I
0.01
~~~
i- 0.05
0.03
DUTY CYCLE. 0 qlt2
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT tllSEE AN·5S9)
......
0.02
0.01
V
I-
ZaJAlt) = rlt) . RaJA
TJlpk)-TA = Plpk) ZaJAlt)
""Sl"j' PU1'
U'
0.05
0.02
iittt
pr'JUl
0.1
1= ~O.07 i~ ~O.05
I I II FIGURE 19 A'
.OIl!!
0.2
0.1
0.2
0.5
1.0
5.0
2.0
10
20
50
100
200
500
1.0k
20k
5.0k
10k
20k
50k
lOOk
t, TIME (ms)
FIGURE 18 - ACTIVE-REGION SAFE OPERATING AREA
400
0
"
N..
r-
0
I
1~
100",-'
,
1 ' , 1.0s
TC =fsO"c,
TA - 25'C
de
......
0
TJ=150'C
_'-C~RR'EN~ LIMIT
'
I
l---===m~~~~~~~TOOWN
0
The safe operating area curves indicate IC,VCE limits
of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 20 is based upon T J(pk) = 150o C;
TC or T A is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided T J(pk)';;;
150 0 C.TJ(pk) may be calculated from the data in Figure
19. At high case or ambient temperatures, thermal limi·
tations will reduce the power that can be handled to
values less than the limitations imposed by second break·
down. (See AN-415AL
de
0
01---- -
~
...
......
LIMIT
6. 0
4. 0
2.0
4.0
6.0
8.0
10
40
20
VeE. COLLECTOR·EMITTER VOLTAGE
FIGURE 19 -
TYPICAL COLLECTOR LEAKAGE CURRENT
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
104
A train of periodical power pulses can be represented by
the model as shown in Figure 19A. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 19 was calculated for various
duty cycles.
To find ZOJA(t), multiply the value obtained from
Figure 19 by the steady state value ROJA.
Example:
The MPS3905 is dissipating 2.0 watts peak under the
following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2,
the reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
/';T = r(t) x P(pk) x ROJA = 0.22 x 2.0 x 200 = SSoC.
For more information, see AN·569.
I--Vcc-30V
1 103
~
'CED
10 2
=>
./
u
~
"
10 I
8
10 0
~
ICBO
t--
AND t::::=
ICEX@VBEI,ffl = 3 0 ~
~
10- I
10-2
-40
-20
+20
+40
+60
+80
+100
+120
+140 +160
TJ. JUNCTION TEMPERATURE I'C)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-40
2N5088
2N5089
MAXIMUM RATINGS
Symbol
2N5088
2N5089
Unit
Collector-Emitter Voltage
VCEO
30
25
Vdc
Collector-Base Voltage
VCBO
35
30
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
50
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
~
25'C
Po
625
5.0
mW
mW/,C
Total Device Dissipation @ TC
~
25'C
Po
1.5
12
Watt
mW/,C
TJ, Tstg
-55 to + 150
'c
Derate above 25°C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTORS
Characteristic
Symbol
Max
Unit
ReJC
125
'CIW
ReJA(l)
357
'CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPN SILICON
Refer to MPSA18 lor graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
0) 2N5088
2N5089
V(BR)CEO
30
25
2N5088
2N5089
V(BR)CBO
35
30
2N5088
2N5089
ICBO
-
50
50
nAdc
lEBO
-
50
100
nAdc
900
1200
Max
Unit
OFF CHARACTERISTICS
(lc
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Collector Cutoff Current
(VCB
(VCB
~
~
~
(lC
~
1.0 mAde, IB
100 pAdc, IE
20 Vdc, IE
15 Vdc, IE
~
~
0)
0)
~
0)
~
(VEB(off) ~ 3.0 Vdc, IC ~ 0)
(VEB(off) ~ 4.5 Vdc, IC ~ 0)
Emitter Cutoff Current
-
-
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC ~ 100 pAdc, VCE
(lc
(lc
~
~
1.0 mAde, VCE
10 mAde, VCE
-
hFE
~
5.0 Vdc)
2N5088
2N5089
300
400
~
5.0 Vdc)
2N5088
2N5089
350
450
2N5088
2N5089
300
400
~
5.0 Vdc)(2)
-
-
-
Collector-Emitter Saturation Voltage
(lc ~ 10 mAde, IB ~ 1.0 mAde)
VCE(sa!)
-
0.5
Vdc
Base-Emitter On Voltage
(lc ~ 10 mAde, VCE ~ 5.0 Vdc)(2)
VBE(on)
-
0.8
Vdc
50
-
MHz
Ccb
-
4.0
pF
Ceb
-
10
pF
350
450
1400
1800
-
3.0
2.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 500 pAdc, VCE ~ 5.0 Vdc, I
~
Collector-Base Capacitance
(VCB ~ 5.0 Vdc, IE ~ 0, I
~
100 kHz)
Emitter-Base Capacitance
(VBE ~ 0.5 Vdc, IC ~ 0, I
~
100 kHz)
Small-Signal Current Gain
(lC ~ 1.0 mAde, VCE ~ 5.0 Vdc, I
fT
20 MHz)
hie
~
Noise Figure
(lc ~ 100 pAdc, VCE ~ 5.0 Vdc, RS
I ~ 10 Hz to 15.7 kHz)
1.0 kHz)
2N5088
2N5089
~
2N5088
2N5089
NF
10 kohms,
-
(1) ReJA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width"" 300 JLS, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-41
dB
•
2N5208
MAXIMUM RATINGS
Rating
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWI"C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
625
12
Watt
mWI"C
TJ, Tstg
-55to +150
°c
Collector Current -
•
Symbol
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
,/~~'''~'
23
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
=
Symbol
Max
Unit
R9JC
83.3
°CIW
ROJA(I)
200
°CIW
2 Emitter
PNP SILICON
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc, IB = 0)
V(BR)CEO
25
-
Vdc
Collector-Base Breakdown Voltage
(lc = 0.1 mAdc, IE = 0)
V(BR)CBO
30
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
3.0
-
Vdc
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
-
10
nAdc
Emitter Cutoff Current
(VBE = 2.0 Vdc, IC = 0)
lEBO
-
100
nAdc
hFE
20
120
-
VBE(on)
-
0.85
Vdc
IT
300
1200
MHz
4.0
pF
1.0
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mAdc, VCE
=
10 Vdc)
Base-Emitter On Voltage
(lC = 2.0 mAdc, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 2.0 mAdc, VCE = 10 Vdc, f
Input Capacitance
(VBE = 2.0 Vdc, IC
= 0, f =
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
100 MHz)
Ccb
-
rb'C c
-
10
ps
NF
-
3.0
dB
Cibo
1.0 MHz)
1.0 MHz)
Collector Base Time Constant
(IE = 2.0 mAdc, VCB = 10 Vdc, f
Noise Figure
(lC = 2.0 mAdc, VCE
=
= 31.8 MHz)
=
10 Vdc, RS
=
10 Vdc, f
=
75 ohms, f
=
100 MHz, BW
=
1.0 MHz)
FUNCTIONAL TEST
Amplifier Power Gain
(lC = 2.0 mAdc, VCE
=
100 MHz)
(1) ReJA is measured with the device soldered into a typical printed circuit board.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-42
2N5208
FIGURE 1·100 MHz POWER GAIN AND NOISE FIGURE TEST CIRCUIT
2.0 pF
0.7 ·10 pF
100
68pF
INPUT
~-iI--fo)oUTPUT
l000pF
2.7 ·30pF
390
270
T1
T2
•
Biliun Core, 5 turns primary. 5 turns
secondary. No. 24 bitillr W'Ound.
'A inch inner diam'tlf. 5% turns
tapped up I'l turn, No. 16 bus wir•.
VBB
Vee
COMMON·EMITTER Y PARAMETERS (Polar Plots)
VCE = 10 Vdc, TA = 25°C
FIGURE 2· INPUT ADMITTANCE
FIGURE 3· OUTPUT ADMITTANCE
20
1. 5
./
V
15
1. 0
1
E
.§
1
Ie =1.0 to 2.0 jA
/200MHZ
E
300
MHz
10
KMHZ
.§
A'
J
E
O. 5
loor Z
I/:;30MHz
50 MHz
5.0
10
9i.(mmhos)
15
20
0.1
0.3
02
0.4
0.5
goe (mmhos)
FIGURE 5· REVERSE TRANSFER ADMITTANCE
FIGURE 4· FORWARD TRANSFER ADMITTANCE
0
30 MHz
50MHz
-0. 2
-1o1----+
100 MHz
-0 .4
s
S
1-20
E
200 M H z ; . - - - t - - - + I - - - - - j
1-
Ie =1.0 to 2.0 mA
0.6
300 MHz
200 MHz
-0 .B
-30r----1-----+-~~-1_------~
L
/
-1 .0
1300 MHz
300 MHz " ' - - - 400~---~20~---4~0~--~6~0---~B·0
-1 .2
-0.15
9fe(mmhosl
-0.10
0.05
-0.05
,,,(mmhDt)
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2·43
0.10
0.15
2N5208
STABILITY FACTOR.CURVE
FIGURE 6 • POWER GAIN AND NOISE FIGURE
35
2&
z
~ 20
i
1 t= looMH.
RS- 15 Ohm._ 1
Gp,
--
30
j
-l
1
"-
10
I
.'"'" ffi
..
\. IJ 6.0
:lJ
4.0
~
/~
NF
~
5.0
;--- """-
is
z
-
- -- -
40
r-
.......
30
8.0 ~
15
J
FIGURE 7· MAXIMUM TRANSDUCER GAIN
&0
1
VCE" 10 V
vcE 'lov,1
'c=2.0mA -
..........
r-- r- t-
i
r- f- r-
,:. 20
co
~ ~
r-~ ~
~
Ii
2.0
o
k =1.2
2.~
15
1.0
2.0
3.0
4.0
5.0 8.0 7.0
lC. COLLECTOR CURRENT ImAd.)
30
80
100
200
I. FREQUENCY IMHz)
COMMON·EMITTER Y PARAMETERS vs FREQUENCY
VCE = 10 Vdc. TA = 25°C
FIGURE 8· INPUT ADMITTANCE
FIGURE 9· OUTPUT ADMITTANCE
2.5
5
t - - IC =2.0mA
--lc·I.0mA
20
2.0
)
gil
'i 15
V
t
:!
10
5.0 I-- t-
o
I30
---
~
40
~ I-j..oo V
b.i....
'i 1.5
j
~ ~::::. I-:
~ F-'"
.....
I'
~
Ii._
~~
!
'"
10
100
200
IC=1.0 to 2.0mA
0.5
I--
-fo-t""
50
./
1.0
o
lo-
30
300
I- ~
r40
r-
I
....
9l,
~
-
o
f-
50
10
100
200
300
2.5
2.0
gfe
I-
-
30
-bfe~
-
.L.
40
----
-.
.!i 30
10
-
\
..........
40 t-- I-
20
b..
FIGURE 11 • REVERSE TRANSFER ADMITTANCE
-lc=2.0mA _
--lc=1.0mA _
0
~
L
t. FREQUENCY 1M Hz)
FIGURE 10· FORWARD TRANSFER ADMITTANCE
60
0..
io,
t. FREQUENCY (MHz)
10
L
50
"'
10
'i 1.5
'i
";;-.;;. :-....
.......
/
.!i
~ 1.0
~ ~
0.5
---:"bf.
100
IC = 1.0 to 2.0 mA c::'I..
200
...... i-- ~
o r-
300
30
t. FREQUENCY IMHz)
40
50
70
100
I. FREQUENCY IMHz)
MOTOROLA SMALL·SIGNAL TRANSISTORS. FETs AND DIODES
2-44
L
-bq
-l1li'<0.01
200
300
2N5208
STABILITY FACTOR CURVES
FIGURE 13 - OPTIMUM LOAD ADMITTANCE
FIGURE 12 - OPTIMUM SOURCE ADMITTANCE
2.o,---r----,--,--,--r---,-,----;;----,---,
60
1.g
w
"z
...lE...'"
Q
'"
"
w
'""
:3l
~
!!i
---- ------
>-v,
~~0----~----~~6=0--~~--~10~0~------~----~~200
f. FREQUENCY (MHzl
f. FREQUENCY (MHz)
WIlen I potentially unstable device is operated without feedback, thent is an infinite number of combinations of
source and load admittance associated w;th any given circuli stability factor (k). Equations have been developed for
determining the optimum source and load admittance for maximum gain. Figures 7. 12 and 13 provide II solution to
die aqultions for the 2N5208.
NOISE FIGURE
FIGURE 14 - FREQUENCY EFFECTS
1. 0
VCE~ IOV I
6. 0
~
FIGURE 15 - SOURCE RESISTANCE EFFECTS
1.0
IC = 2.0 mA
RS = 75 Ohms
-
6.0
~
w
5.0
w
a:
::l
"0:
~
~
~
"'"~
4. 0
./
3. 0
5.0
r
VCE 1= 10lV I
IC = 2.0mA
f = 100 MHz
"\
4.0
~
0
3.0
z
2. 0
z
1. 0
0
30
1/
"t'-...
w
..:
~
..,/
2.0
1.0
40
50
70
100
o
200
10
300
20
30
100
50
500
200
1.0 k
RS. SOURCE RESISTANCE (Ohm,)
f. FREQUENCY (MHz!
FIGURE 16 - CURRENT-GAIN -BANDWIDTH PRODUCT
FIGURE 17 - CAPACITANCES
£ 1000
0
~ 900
~
VCE=IOV
'" 800
E 700
...'"
~
600
z
~ 500
~
I
-
~
w
"- \
Z
~
~
G
.t:'
TA = 250 C
5. 0
400
"
Z
'"
!::
~
i\
\
f = 1.0 MHz
E
2.0
Cibo
0
Cobo
Ccb~
O. 5
ro-!"-
o. 2
O. 1
300
1.0
2.0
3.0
4.0
5.0
6.0 7.0 S.O 9.0 10
0.1
IC. COLLECTOR CURRENT (mAl
0.2
0.5
1.0
2.0
REVERSE BIAS (V"'!
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-45
5.0
10
20
30
•
2N5208
FIGURE 18 - DC CURRENT GAIN
3.0
ffi
N
2. 0
TJ = 125°C
VcE" 10 V
:::;
<
~
o
~
z
C
..
~
•
1.0
O.8
O.6
O. 5
0.4
:i
B
0.3
'"'o
0.2
.......
"-
-65DC
.............. .........
~,
""
W
.it"
O. 1
0.1
f-.--
t--
25 DC
0.2
0.3
0.4
0.5
0.1
1.0
2.0
IC. COLLECTOR CURRENT (mAl
3.0
4.0
5.0
1.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-46
10
20
2N5209
2N5210
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
50
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
50
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mWf'C
Total Device Dissipation @ TC
Derate above 2SoC
= 25°C
Po
1.S
12
Watt
mWf'C
TJ, Tstg
-55 to +150
°C
Symbol
Max
Unit
R9JC
125
°CIW
R8JA(1)
357
°CIW
Operating and Storage Junction
Temperature Range
CASE 29-04. STYLE 1
TO-92 ITO-226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to MPSA18 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
50
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
V(BR)CBO
50
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vde
Vde
Collector Cutoff Current
(VCB = 36 Vde, IE = 0)
ICBO
-
50
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
SO
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !JAde, VCE
=
hFE
S.O Vde)
2NS209
2NS210
100
200
300
600
(lc
=
1.0 mAde, VCE
= S.O Vde)
2NS209
2NS210
1S0
2S0
-
(lC
=
10 mAde, VCE
= s.o Vde)(2)
2NS209
2N5210
1S0
250
-
-
-
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.7
Vde
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vde)
VBE(on)
-
0.85
Vde
30
-
MHz
-
4.0
pF
1S0
250
600
900
SMALL-SIGNAL CHARACTERIS1lCS
Current-Gain - Bandwidth Product
(lC = SOO !JAde, VCE = 5.0 Vde, f
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
Ceb
100 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vde, f
Noise Figure
(lC = 20 !JAde, VCE = 5.0 Vde, RS
f = 10 Hz to 15.7 kHz)
(lC = 20 !JAde, VCE
f = 1.0 kHz)
=
IT
= 20 MHz)
5.0 Vde, RS
=
hfe
1.0 kHz)
2N5209
2NS210
NF
dB
= 22 k ohms,
2N5209
2N5210
-
3.0
2.0
=
2N5209
2N5210
-
4.0
3.0
10 k ohms,
(1) R9JA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width = 300 p.s, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-47
-
•
2N5222
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
2.0
Vdc
Collector Current -
•
IC
50
mAdc
Total Device Dissipation @ TA
Derate above 25"C
Continuous
=
25"C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25"C
=
25"C
Po
1.5
12
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
3 Collector
,~()
Watt
+ 150
2 Emitter
"C
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ROJC
125
"CIW
RoJA(I)
357
"CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
=
NPN SILICON
25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
15
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 I
z
...."
....
~
"
~
~
50
"'"
-10
9ib
~
-bib
40
-20
"'R ..............
"-
30
20
>=
10
200
100
FIGURE 2 - POLAR FORM
300
400
500
-1000 MHz
~
~ -30
oS
........ 1--
'" ""'-
"
~
-10
-50
1'\
---
1
400
2 0 -100
t--
I
-60
1000
700
"
700
r--......
30
20
10
40
f. FREUUENCY (MHz)
50
60
80
70
9ib (mmhos)
Yfb. FORWARD TRANSFER ADMITTANCE
~
~
70
oS 60
w
<..>
50
....
"
....
40
e
30
z
;;;
"'"
w
20
'"z
10
~
~
-----
bfb
--.;;..
.......
,
r- .........
50
....... r--.,
I
"fb
~
400
100
...........
N
600""",
700"-
"~
40
oS
I"
~
""'-
e
"'"ii'i:
FIGURE" - POLAR FORM
60
....
:t
-
FIGURE 3 - RECTANGULAR FORM
-10
e
"
""
30
1000 MHz
20
-20
"
~ -30
100
. 200
400
300
f. FREQUENCY (MHz)
500
700
10
70
1000
60
50
40
30
20
10
-10
-20
-30
1.2
1.6
2.0
9fh (mmhos)
COMMON-BASE Y PARAMETERS versus FREOUENCY
(VCB = 10 Vde, IC = 4.0 mAde, T A = 25°C)
Yrb. REVERSE TRANSFER ADMITTANCE
FIGURE 5 - RECTANGULAR FORM
FIGURE 6 - POLAR FORM
~ 5.0
~
100
oS
w
<..>
z
4.0
-1.0
200
~ -2.0
400
"
1=
;;;
e
"'"w
3.0
v
~
'"z
2.0
....
w
'"w
'"
1.0
~
0
~
~
/'
100
-~
200
-
f.-- f.--
~
V -brb_
V
400
500
300
f, FREQUENCY (MHz)
oS
4. -3.0
700
-4.0
lIrb
700
1000 MHz
-5.0
1000
-2.0
-1.6
-1.2
-0.8
-0.4
9rb(mmhos)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-49
0.4
0.8
•
2N5222
Yob. OUTPUT ADMITTANCE
FIGURE 8 - POLAR FORM
FIGURE 7 - RECTANGULAR FORM
10
8.0
'-'
z
«
>>-
6.0
w
;;;
c
,/
9.0
IoS
8.0
7.0
5.0
~
•
1/1000MHz
1/
« 4.0
>!; 3.0
0
~
10
2.0
1.0
bob
--
100
'ii
E
oS
V
~
~ 4.0
V
,.-
I
t400I
700
200
V""
2.0
~ ........
100
~ I--200
6.0
300
400
500
o
700
o
1000
2.0
4.0
6.0
gob (mmhos)
f, FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-50
8.0
10
2N5223
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
20
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
100
mAdc
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
625
5.0
mW
mWfC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
1.5
12.0
Watt
mWfC
TJ, Tstg
-55to +150
"C
Symbol
Max
Unit
RIiJC
125
"CIW
RIiJA(l)
357
"CIW
Collector-Emitter Voltage
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
,/~~'~"'
23
THERMAL CHARACTERISTICS
..
1 Emitter
AMPLIFIER TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPNSILICON
(1) RIiJA is measured with the device soldered Into a tYPical printed CirCUit board.
Rater to 2N3903 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAdc, IB = 0)
V(BR)CEO
20
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
25
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
3.0
-
Vdc
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
500
nAdc
200
500
Max
Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mAde, VCE
=
hFE
-
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
IT
0.7
Vde
1.2
Vde
150
-
MHz
Ccb
-
4.0
pF
hfe
50
1600
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
1.0 MHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vde, f
=
1.0 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-51
2N5226
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
25
Vde
Collector-Base Voltage
VCBO
25
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
500
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
PD
625
5.0
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
1.5
12.0
mWrC
TJ, Tstg
-55to+150
"C
Symbol
Max
Unit
R9JC
125
"CIW
R9JA(1)
357
"CIW
Collector-Emitter Voltage
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
mW
.:~
Watt
1 Emitter
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PNP SILICON
(1) R9JA IS measured WIth the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
25
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
25
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
4.0
-
Vde
Collector Cutoff Current
(VCB = 15 Vde, IC = 0)
ICBO
-
300
nAde
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
lEBO
-
500
nAde
25
30
600
Characteristic
Max
Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 mAde, VCE
(lC = 50 mAde, VCE
=
=
-
hFE
10 Vde)
10 Vdc)
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
-
0.8
Vde
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 10 mAde)
VBE(sat)
-
1.0
Vde
50
-
MHz
Ccb
-
20
hfe
30
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 10 Vdc, f = 20 MHzl
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
fT
pF
1.0 MHz)
Small-Signal Current Gain
(lC = 50 mAde, VCE = 10 Vde, f
=
1.0 kHz)
(2) Pulse Test: Pulse Width", 300 I.I.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-52
1800
-
2NS227
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 2SoC
=
25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 2SoC
=
25°C
PD
1.S
12.0
Watt
mWrC
TJ, Tstg
-55to +1S0
°C
Symbol
Max
Unit
RruC
83.3
°C/W
RruA(1)
200
°C/W
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
":~
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
•
1 Emitter
AMPLIFIER TRANSISTOR
PNP SILICON
(1) RruA is measured with the device soldered into a typical printed circuit board.
Refer to 2N3905 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
2SOC unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
30
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
30
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
3.0
-
Vdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VBE = 2.0 Vdc, IC = 0)
lEBO
-
SOO
nAdc
30
SO
-
ON CHARACTERISTICS
DC Current Gain
(lC = 100 pAdc, VCE = 10 Vdc)
(lc = 2.0 mAde, VCE = 10 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
fT
-
700
0.4
Vdc
1.0
Vdc
100
-
MHz
S.O
pF
1S00
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 10 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, 1= 1.0 MHz)
Ccb
-
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vdc, f = 1.0 kHz)
hie
SO
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-53
2N5400
2N5401
MAXIMUM RATINGS
Symbol
2N5400
2N5401
Unit
Collector-Emitter Voltage
Rating
VCEO
120
150
Vdc
Collector-Base Voltage
VCBO
130
160
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAde
Total Device Dissipation @ T A = 25°C
Derate above 25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12.0
Watt
mWrC
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
°c
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTORS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
°C/W
Thermal Resistance, Junction to Ambient
R8JA
200
°C/W
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
2N5400
2N5401
V(BR)EBO
ICBO
0)
0)
0, TA
0, TA
=
=
100°C)
100°C)
2N5400
2N5401
2N5400
2N5401
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
-
120
150
-
130
160
-
5.0
-
-
100
50
100
50
-
50
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE =
(VCB = 120 Vde, IE =
(VCB = 100 Vdc, IE =
(VCB = 120 Vdc, IE =
Vde
V(BR)CEO
2N5400
2N5401
Vdc
Vde
nAdc
pAdc
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 1.0 mAde, VCE
hFE
=
5.0 Vdc)
2N5400
2N5401
30
50
-
(lC
=
10 mAde, VCE = 5.0 Vdc)
2N5400
2N5401
40
60
180
240
(lC
=
50 mAde, VCE
= 5.0 Vde)
2N5400
2N5401
40
50
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
Vde
-
-
0.20
0.5
Vde
1.0
1.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vdc, f = 100 Mhz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
=
2N5400
2N5401
fr
Cobo
MHz
100
100
400
300
-
6.0
1.0 MHz)
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2·54
pF
2N5400,2N5401
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted)
Characteristic
Symbol
Small-Signal Current Gain
(lC = 1.0 mAdc. VCE = 10 Vdc. 1= 1.0 kHz)
Min
Max
30
40
200
200
-
8.0
Unit
-
hie
2N5400
2N5401
Noise Figure
(lC = 250 pAdc. VCE = 5.0 Vdc.
RS = 1.0 kohm. 1= 10 Hz to 15.7 kHz)
NF
dB
(1) Pulse Test: Pulse Width = 300 J.U;. Duty Cycle = 2.0%.
FIGURE 1 - DC CURRENT GAIN
•
!-_~r20P0.1
0.3
0.2
0.5
3.0
2.0
5.0
IC. COLLECTOR CURRENT (mA)
1.0
10
20
30
50
100
FIGURE 2 - COLLECTOR SATURATION REGION
1.0
S
e 0.9
1\
1
1
i!
w O.B
'"<
!:; 0.7
e
>
0: 0.6
!:::E
IC= 1.0mA
0.5
\
e
t; 0.3
w
0.2
ul
0.1
t.>
\
l00mA
30mA
\ 10mA
_\
"! 0.4
0:
::l
e
\
\
w
\
\
\
\
1\
1\
\
~
~
t-
--
t....
1-1-
t.>
>
0.005
0.01
0.05
0.02
0.1
0.2
0.5
lB. BASE CURRENT (mA)
-
1.0
"l"-
r--
2.0
5.0
FIGURE 3 - COLLECTOR CUT·OFF REGION
103
/
1/
t- VeE = 30 V
;;: 102
..:!-
~IC=ICES
....
/
~ 10 1
0:
0:
TJ
::.
= 125 0 C
~
~ 100
tj 10-1
e
t.>
~10·2
/
,
75 0 C
~REVERSE
FORfARD
25 0 C
10·3
0.3
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
VBE. BASE·EMITTER VOLTAGE (VOLTS)
0.6
0.7
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-55
10
20
50
2N5400, 2N5401
FIGURE 4 - "ON" VOLTAGES
1.0
TJ·250C
II 1111
0.9
0.8
I
~
I
0.5
--
6VC FOR VCE(SAT)
8 0
...
g;-o. 5
<
~ 0.4
~
>.0.3
S-l.D
Ie'
0.2 f--- I-- VCE(SAT)@ IcllB -10
•
1.0
U
...e:
~
~O.5
_11111
1.5
~
~
VBE(SAT)@ Ic/lB =10
-l-
c5 0.6
llll
TJ = -55 0C10 135 0C
~ 2.0
IIIIIII
II
""
~0.7
FIGURE 5 - TEMPERATURE COEFFICIENTS
2.5
Ci -1.5
....
i-'
II 1111
o
0.1
0.2 0.3 0.5
6V8 FOR VBE(SAT)
.,>-2.0
O. 1
-2.5
1.0
2.0 3.0 5.0
10
20 30
IC. COLLECTOR CURRENT (mA)
50
0.1
100
ilWl1.0
0.2 0.3 0.5
2.0 3.0 50
10
IC. COLLECTOR CURRENT (mA)
FIGURE 6 - SWITCHING TIME TEST CIRCUIT
--
20 30
10.2V
1.-101'01---1
INPUT PULSE
50
100
FIGURE 7 - CAPACITANCES
100
LU
I-'
VBB
70
50
VCC
30 V
8.8 V
3.0 k
;;:
RC
100
3D
.e
...
VOUI
..,z
20
~ 10
TJ' 25 0 C
-
~
---
~ 7.0
r;;ibo
r-- I'-
~ 5.0
Cobo~
3.0
Vln
1,.lf .. l0..
Duty Cycle' 1.0%
1-=
2.0
1.0
0.2
0.3
V.lues Shown ere fo, IC @ , 0 mA
FIGURE 8 - TURN·ON TIME
1000
700 ~!clIB'10
500 f-TJ = 250C
T}.i5
] 200
...
oJ
I'('"
~
~
l! 100
....
1000
1,@VCC' 12OV -
I"
700
500
1,@VCC'30V
r'\
]300 f- - If@VCC' 30V
I'
Id@ VBE (OFF) -to V
1.0
2.0 3.0 5.0
10
20 3D
IC. COLLECTOR CURRENT (mA)
II
~
50
100
70
50
......
100
"
1,@VCC"20V
oJ
mi,'20V
10
0.2 0.3 0.5
Ic/lB = 10
t=
20
20
f\ I ~flJ VCC' ldo V
Jl
~IU
!l! 200
70
50
30
10
FIGURE 9 - TURN·OFF TIME
2000
300
0.5 0.7 1.0
2.0 3.0
5.0 7.0
VR. REVERSE VOLTAGE (VOLTS)
'\
30r-r+~+Ht-~~-+++~--+-+~~tlt-~
20~~~~~~~~~~~~~~~~~~
0.2 0.3 0.5
200
1.0
2.0 3.0 5.0
10
20 30
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-56
50
100
200
2N5550
2N5551
MAXIMUM RATINGS
Symbol
2N5550
2N5551
Unit
Collector-Emitter Voltage
Rating
VCEO
140
160
Vde
Collector-Base Voltage
VCBO
160
180
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
600
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
mWrC
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
I ":~
mW
3 Collector
Watt
+ 150
"
°c
23
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1 Emitter
Symbol
Max
Unit
AMPLIFIER TRANSISTORS
ROJC
125
°CIW
NPN SILICON
RtlJA(l)
357
°CIW
(1) RtlJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
2N5550
2N5551
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
V(BR)EBO
ICBO
0)
0)
0, TA
0, TA
=
=
160
180
6.0
-
Vde
-
nAde
-
100
50
100
50
-
50
V(BR)CBO
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
100°C)
100°C)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
Vde
-
140
160
Vde
pAde
nAde
ON CHARACTERISTICS(2)
DC Current Gain
(lc = 1.0 mAde, VCE
(lc
=
(lC
= 50
10 mAde, VCE
mAde, VCE
hFE
=
5.0 Vde)
2N5550
2N5551
60
80
-
=
5.0 Vde)
2N5550
2N5551
60
80
250
250
=
5.0 Vde)
2N5550
2N5551
20
30
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC
=
50 mAde, IB
=
VCE(sat)
5.0 mAde)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC
=
50 mAde, IB
=
5.0 mAde)
(2) Pulse Test: Pulse Width
=
300
!,-S,
Duty Cycle
=
Vde
Both Types
-
2N5550
2N5551
-
-
0.25
0.20
Both Types
-
1.0
2N5550
2N5551
-
1.2
1.0
VBE(sat)
0.15
Vde
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-57
-
•
2N5550,2N5551
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
I
Characteristic
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 10 mAde. VCE ~ 10 Vdc. f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc. IE
~
Input Capacitance
(VBE ~ 0.5 Vdc. IC
O. f
~
Symbol
Min
Max
Unit
t,-
100
300
MHz
Cobo
-
6.0
pF
1.0 MHz)
pF
Cibo
~
O. f
~
2N5550
2N5551
1.0 MHz)
Small-Signal Current Gain
(lC ~ 1.0 mAde. VCE ~ 10 Vdc. f
Noise Figure
(lC ~ 250 pAdc. VCE ~ 5.0 Vdc.
f ~ 10 Hz to 15.7 kHz)
hfe
~
-
30
20
50
200
-
10
8.0
-
1.0 kHz)
NF
Rs
-
~
2N5550
2N5551
1.0 kohm.
dB
FIGURE 1 - DC CURRENT GAIN
500
300
200
z
;(
'"
~
z
100
::;
=>
:;;
50
t--TJ = 1250C
r---- 250C
w
...
....
- ...
-~
=~550C
Yce"I.0Y
Ycp 5.0 Y
-..
....::
30
~
20
I'-
10
7.0
5.0
0.1
0.2
0.3
C.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
IC. COLLECTOR CURRENT (mA)
FIGURE 2 - COLLECTOR SATURATION REGION
_
1.0
!So
0.9
~
w
~
~
0.5
W
0.4
ci::
o
\
1
0.8
0.7
o
;:; 0.6
iii
~
IC= 1.0 mA
\ 10mA
1\
t; 0.3
~
8
0.2
>
0
~ 0.1
0.005
100mA
30mA
\
\
..... 1"- ....
~ I-0.01
0.02
0.05
0.1
0.2
"-
0.5
1.0
lB. BASE CURRENT (mA)
"-
t-- ~
2.0
5.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-58
10
20
50
2N5550,2N5551
FIGURE 3 - COLLECTOR CUT-OFF REGION
101
~ F=VCE -30V
/
;;: 100
3
....z
~
a:
lO-
I f - - I- TJ = 125 0 C
_IC~ICES
...
:::>
:5w2
g
...c5..; 10-3
I
/
750 C
~ =REVERSE'~ ~FOIRWARO
10-5
0,4
.Y
250 C
-10-4
0.3
0.2
0.1
0.1
0.2
0.3
0.4
0.5
•
0.6
VSE. SASE·EMITTER VOLTAGE (VOLTS)
FIGURE 5 - TEMPERATURE COEFFICIENTS
FIGURE 4 - "ON" VOL TAGES
1.0
I-- IO.S
f---+-
~
0.6
0
~
w
co
<
!3
0
fJ
2.5
L2~oh
~
-I II
Js~(~tl @Iclis- 10
-
-
..s....>
1..--"-
1.0
0.5
8~Jf~m~(..tl
'-
8
..-
w
0.4
a:
-0.5
1l!
-1.0
::>
....
<
>
,;
~
0.2
....
VCE(..tl@IC/IS- 10
0.2 0.3 0.5
8VS for VSE(..I)
-1.5
fTFF
~ -2.0
o
0.1
ffi
-j"! iTt it
II III
J
1.5
:tw
;:;
I-
+Jj~oc I 1+\J5l~
2.0
1.0
2.0 3.0 5.0
10
20 30
IC. COLLECTOR CURRENT (mA)
50
-2.5
0.1
100
II
0.2 0.3 0.5
1111
1.0
2.0 3.0 5.0
10
IC. COLLECTOR CURRENT (mA)
20 30
50
100
FIGURE 7 - CAPACITANCES
FIGURE 6 - SWITCHING TIME TEST CIRCUIT
100
70
0
10.2V
r-JL
1- ",-1
Ir.lf-
1000
~
;:::
-'
i
•
tr@veml~v
~
~
,.;:::
w
.,
td @VEB(off) = 1.0 V
2,0 3,0
5,0
10
20 30
50
100
300
t,@Vce= 120 V
100
50
0,2 0,3 0,5
10 L-'-'---'-'--L..l.J.J.IJ.........J
I---,-IJ.-'---'--'-J-UJ"--J.......J....J...J.......I.....L..J..W.J.J..-.I-l
1.0
500
I-...
V
r-'"
r-.....
200
3°ttE1=Estvne=e~=~12iOiVt=EtEE~=t~~1st±tt~=tj
20~
II
j
0,2 0,3 0,5
I
~
/
100il!~11111
50
f=
tf@VCC=30V
200
,Ie. COLLECTOR CURRENT (mAl
1.0
2,0 3,0
5,0
10
20 30
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-60
50
100
200
2N5771
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
50
mA
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
350
2.8
Watts
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
1.0
8.0
Watt
mWI'C
TJ, Tstg
-55 to + 150
'c
TL
260
'c
Operating and Storage Junction
Temperature Range
Lead Temperature
I
·:~'''""'
12
1 Emitter
3
SWITCHING TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
= 3.0 mA)(I)
= 100 /'A)
V(BR1CEO
15
V(BR)CES
15
-
100 /'A)
V(BR)CBO
15
-
Vdc
V(BR)EBO
4.5
-
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc
Collector-Emitter Breakdown Voltage
(lC
Colle¢or-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lC
(IE
=
=
100/'A)
= 8.0 Vdc)
Collector Cutoff Current (VCE = 8.0 Vdc)
(VCE = 8.0 Vdc, TA =
Emitter Cutoff Current (VBE = 4.5 Vdc)
Collector Cutoff Current
(VCB
Vdc
Vdc
-
10
nA
10
5.0
/'A
lEBO
-
1.0
/'A
hFE
35
50
40
20
-
-
0.15
0.18
0.6
Vdc
0.8
0.95
1.5
Vdc
3.0
pF
3.5
pF
ICBO
ICES
125'C)
nA
ON CHARACTERISTICS
DC Current Gain
(lC
(IC
(IC
(lc
Collector-Emitter Saturation Voltage(l)
(lc
(lc
(lC
Base-Emitter Saturation Voltage(l)
(lC
(lc
(lC
= 1.0 mA. VCE = 0.5 Vdc)(l)
= 10 mA, VCE = 0.3 Vdc)(l)
= 50 mA. VCE = 1.0 Vdc)(l)
= 10 mA, VCE = 0.3 Vdc, TA =
= 1.0 mA, IB = 0.1 mAl
= 10 mA, IB = 1.0 mAl
= 50 mA, IB = 5.0 mAl
= 1.0 mA, IB = 0.1 mAl
= 10 mA.IB = 1.0 mAl
= 50 mA. IB = 5.0 mAl
-55'C)
VCE(sat)
VBE(sat)
-
-
0.75
-
120
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 5.0 Vdc, f = 140 kHz)
Ccb
Emitter-Base Capacitance
(VBE = 0.5 Vdc, I = 140 kHz)
Ceb
-
hIe
8.5
-
-
ts
-
20
ns
15
n.
20
n.
Small-Signal Current Gain
(lC = 10 mA, VCE = 10 Vdc, I
=
100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(lC = 10 mA, IBI = IB2
Turn-On Time
(lC = 10 mA, IB
Turn-Off Time
(lC = 10 mA, IBI
=
= 10 mAl
ton
1.0 mAl
toff
=
IB2
=
1.0 mAl
(1) Pulse Conditions: Pulse Length
= 300 /LS, Duty Cycle
-
= 1.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-61
•
2N6426
2N6427
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
CQllector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
IC
500
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
PD
625
5.0
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
1.5
12
mWrC
-55 to +150
"C
Collector Current -
•
Continuous
Operating, and Storage Junction
Temperature Range
TJ, Tstg
Unit
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Collector 3
"I ",-
mW
Watts
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RWC
83.3
"CIW
RWA(1)
200
"CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Emitter 1
DARLINGTON TRANSISTORS
NPN SILICON
(1) RWA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA = 25"C unless otherwise noted.)
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, VBE= 0)
V(BR)CES
40
-
Coliector:Base Breakdown Voltage
(lC = 100 ,..Adc, IE = 0)
V(BR)CBO
40
-
Emitter-Base Breakdown Voltage
(IE = 10 ,..Adc, IC = 0)
V(BR)EBO
12
-
1.0
,..Adc
50
nAde
50
nAde
Characteristic
Typ
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICEO
-
-
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
-
-
Max
Unit
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(2)
(lc = 10 mAde, VCE = 5.0 Vde)
(lc = lOa mAde, VCE = 5.0 Vde)
(lC = 500 mAde, VCE = 5.0 Vde)
hFE
2N6426
2N6427
20,000
10,000
2N6426
2N6427
30,000
20,000
2N6426
2N6427
20,000
14,000
-
200,000
100,000
-
-
300,000
200,000
-
200,000
140,000
0.71
0.9
1.2
1.5
1.52
2.0
Vde
1.24
1.75
Vde
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 0.5 mAde)
(lC = 500 mAde, IB = 0.5 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 500 mAde, IB = 0.5 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 50 mAde, VCE = 5.0 Vde)
VBE(on)
-
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Cobo
-
5.4
7.0
pF
Input Capacitance
(VBE = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
-
10
15
pF
-
Vde
SMALL-SIGNAL CHARACTERISTICS
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-62
2N6426, 2N6427
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25°C unless otherwise noted)
Symbol
Characteristic
Input Impedance
(lC ~ 10 mAde, VCE
5.0 Vde, I
~
1.0 kHz)
2N6426
2N6427
Small-Signal Current Gain
(lC ~ 10 mAde, VCE ~ 5.0 Vde, I
~
1.0 kHz)
2N6426
2N6427
~
Typ
Max
100
50
-
2000
1000
20,000
10,000
-
-
~
100 MHz)
1.5
1.3
2.4
2.4
-
Output Admittance
(lC ~ 10 mAde, VCE
~
1.0 kHz)
~
5.0 Vde, I
hoe
-
-
~
5.0 Vde, RS
~
NF
-
3.0
'hie'
2N6426
2N6427
Unit
kG
hie
Current Gain - High Frequency
(lC ~ 10 mAde, VCE ~ 5.0 Vde, I
Noise Figure
(lC ~ 1.0 mAde, VCE
I ~ 1.0 kHz)
Min
hie
100 W,
-
-
-
1000
Jl-mhos
10
dB
(2) Pulse Test: Pulse Width", 300 JI-S, Duty Cycle'" 2.0%.
FIGURE 1 - TRANSISTOR NOISE MODEL
1-----------1
,
,
Ideal
Transistor
,
I
L ___________ .J
NOISE CHARACTERISTICS
(VCE
= 5.0 Vdc, TA = 25°C)
FIGURE 2 - NOISE VOLTAGE
FIGURE 3 - NOISE CURRENT
2. a
500
200
~
w
to
r-.-..
100
«
~
<>
>
......
BANDWIDTH: 1.0 Hz
RS ~ 0
'"
~
50
100pA
~
<5
z
~
>-
10pA
w
..........
20
5.0
10
20
50
100 200
500 1.0k 2.0k 5.0k 10k 20k
f. FREQUENCY (Hz)
IC
o. 3
B
0.2
w
O.I - t -
~
to--
z
I,~~ 1.0 mA
O. 7
o.5
~
V
~iA
IIIII
/J
lOOpA
E 0.0 7
I mtt---
10
BANDWIDTH: 1.0 Hz
1.0
lOpA
0.05
0.0 3
0.02
10
50k lOOk
1111
20
50
lOa 200
500 10k 2.0k
f. FREQUENCY (Hz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-63
5.0k 10k 20k
50k lOOk
•
2N6426,2N6427
FIGURE 4 - TOTAL WIOEBAND NOISE VOL TAGE
200
14
I I II 1111
BANDWIDTH = 10 HzTO 15.7 kHz
~
~
70 riC - 1O.A
w
50
~
>
~
"z
~
•
"....3:
/'
w
\OO~A
.~
10
1.0
'\.
1O.A
'\.
8.0
z
~'
z
V
rrr
100.A
'\
'\.
6.0
'\.
0
V
1.0mA
I-
~
I--'
1
20
50
10
20
50
100
RS, SOURCE RESISTANCE (k!l)
500
200
.........
/ ' r--.
4.0 I-Ic=r°j'\
1
1000
I............
I
1
2.0
B~~O~lb~H = 10 ~z t~ l~)k~~
'\.
'\.
10
'"u:
1 I
20
«
5>-
w
~
=>
I I
30 r- I-
II
'\.
12
1/
100
oz
FIGURE 5 - WIDEBAND NOISE FIGURE
1.0
1
2.0
10
20
50
100
200
RS, SOURCE RESISTANCE (k!l)
5.0
500 1000
SMALL-SIGNAL CHARACTERISTICS
FIGURE 6 - CAPACITANCE
FIGURE 7 - HIGH FREQUENCY CURRENT GAIN
4.0
20
11111
-
10
liJI~ ~5OC
~
~
a....
~
7. 0
Cibo
«
S
~
5.0
-
«
~
Cabo
.............
~J~\;soe
lOOk
70k
bsoe
~ SDk
~
a
g
0.2
0.4
10
2.0
40
VR, REVERSE VOLTAGE (VOLTS)
10
20
I
02
0.5
40
10
0.5
10
20
50
100
IC, COLLECTOR CURRENT (mAl
2.0
200
500
FIGURE 9 - COLLECTOR SATURATION REGION
-
3,0
..... I'".
f-- ~
II
~
II
~ 2.5
I- :c l=
w
'"~
30 k
III
II
III II
1~~~ S~~A
III II
III II
IIIII
11111
I III
TJ=2S oC
~~O~~ ~~~ll
'" 2.0
>
20k
'"
10k
1fi
or
~
~ 7.0k
-ssoe
~ S,Ok
'"
VeE - 5.0 V
i-H"'"
3,0 k
2.0 k
5.0
,
f
FIGURE 8 - DC CURRENT GAIN
'"
>-
1\
1.0
08
....
3.0
0.1
\.
,/
«
1)j 0.4
<5
20
0.04
"
."
;;;
.... 0.6
;3
201lk
V
2.0
>-
~
z
VCE=50V
t= 100MHz
TJ = 250 C
z
~
f--
10
1.0
i'-..
8
U
7,0
1.S
....
~ 0.5
20
30
SO 70 100
Ie, COLLECTOR CURRENT (mAl
200
301l
SOO
>
0,1
0,2
0.5
1.0
2.0
5.0 10 20
la, BASE CURRENT ,"AI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-64
50
100 200
500 1000
2N6426,2N6427
FIGURE 10- "ON" VOLTAGES
1.6
IIII
TJ: 250C
1.4
~
0
1.2
.
1.0
w
-
'Rwe for VCE('atl
IIII
IIII
o.a
I I
I I
~
0.6
5.0 7.0
1
10
-
I--
-3.0
~
-4.0
~
~
I!'
200
IIII
300
-
_'VB tor VBE
-5.0
-6.0
5.0
500
I
J.W..I--I
JJ.l-.--j-
1
10
-
-550C to 250C
IIII
1.0
-
,/
250C.o 1250C
~
1
20
30
50 70 100
IC. COLLECTO R CURRENT (mA)
-550C to 250C
~
i
I---'"
VCE( ... )@ Ic/la: 1000
.l-r-
G -2.0
VSE(on) @ VCE : 50 V
0
>
>'
~~
~ -I-
..... ""
1liL-+-r- ~""
2~0~ ~~ 1250ri
• APPLIES FOR IC/IS" hFE/3.0
........ r;::v
I=H+t-Il
2-
'":;
I I
11
~SIE!~t! @ Ij/ls1 1000
1-I-rT
FIGURE 11- TEMPERATURE COEFFICIENTS
-1.0
I
50 70 100
20 30
IC. COLLECTOR CURRENT (mAl
200
300
500
FIGURE 12 - THERMAL RESPONSE
1.0
O.
O.
~f-D.0.5
-'0;
:i
~
r-
o. 3
~ ~ o.2~
.-'"
t;!~
w ~
U;w
.-.
o. 1
-
o.
O.~ 0.05
~~INIGLE PULS·
SINGLE PULSE
~ ~a.o 7
:= ~ 0.0 5
-
-
~ ~O.03
- - ZeJC(t1 = r(t!. ReJC
ZeJA(W dt!. RaJA
---
0.02
III
0.0 1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
TJ(pkl- TC: P(pkl ZeJC(.1
TJ(pk) - TA = P(pk) ZeJA(t1
I I III
100
200
1.0 k
500
2.0 k
I
5.0 k
10 k
'. TIME (m,1
FIGURE 13 - ACTIVE REGION SAFE OPERATING AREA
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
1.0k
...-
Figure A
700
SOO
.§ 300
200
ffi
a:
a:
:> 100
a: 70
r--
TA=250C
....
1.0m~~ ;<\:
..........
I'
.....
I,TC:
250C~00"S r-'
~
,,~.o,
'"
0
~
8
;2
50
r-r-20 r--
- - - - CURRENT LIMIT
- THERMAL LIMIT
- - - SECOND BREAKDOWN LIMIT
30
10
0.4
I II
0.6
"-
-....,
-'
I
---,
I
"
I II
1.0
2.0
4.0 6.0
10
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
"
20
tl
.---
I
I
I
I
l-l/,---l
Duty Cycle'" t1
40
f:::~
Peak Pulse Power
tp
= Pp
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-65
•
2N6428,A
MAXIMUM RATINGS
Symbol
Value
Unit
VCEO
50
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
200
mAde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ T C = 25·C
Derate above 25·C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to+15O
·C
Symbol
Max
Unit
R6JC
83.3
·CIW
R8JA
200
·CIW
Rating
Collector-Emitter Voltage
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04. STYLE 1
TO-92 (TO-226AA)
,I·:~~m
23
' Emitter
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise hated.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
50
Collector-Base Breakdown Voltage
(lc = 0.1 mAde, IE = 0)
V(BR)CBO
60
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 Vdc)
ICEO
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
-
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
lEBO
-
-
Vdc
Vdc
0.025
p.A
0.Q1
p.A
0.Q1
p.A
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc,
(VCE = 5.0 Vdc,
(VCE = 5.0 Vdc,
(VCE = 5.0 Vdc,
IC
IC
IC
IC
hFE
= 0.01 mAde)
= 0.1 mAde)
= 1.0 mAde)
= 10 mAde)
250
250
250
250
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 100 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(IC = 1.0 mAde, VCE = 5.0 Vdc)
-
-
650
-
Vdc
-
0.2
0.6
VBE(on)
0.56
0.66
Vdc
IT
100
700
MHz
Cobo
-
3.0
pF
Cibo
-
8.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 V, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VEB = 0.5 Vde, IC
= 0, f =
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-66
2N6428, A
ELECTRICAL CHARACTERISTICS Icontinued) ITA
~ 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
hie
3.0
30
kn
Voltage Feedback Ratio
IIc ~ 1.0 mAde, VCE ~ 5.0 Vdc, f ~ 1.0 kHz)
h re
2.0
20
X 10- 4
Small-Signal Current Gain
IIc ~ 1.0 mAde, VCE ~ 5.0 Vdc, f
hfe
200
800
~
1.0 kHz)
Output Admittance
IIc ~ 1.0 mAde, VCE
hoe
5.0
50
~
1.0 kHz)
NF
VT
Max(1}
NF
VT
Max(2}
NF
vT
Max(3}
Unit
3.0 118.1
2.0
16.2
6.0 15700
4.0 4600
3.5 14.3
3.0
4.1
dB 1 nV
dB
nV
Input Impedance
IIc ~ 1.0 mAde, VCE
~
~
5.0 Vdc, f
5.0 Vdc, f
~
1.0 kHz)
/Lmhos
NOISE FIGUREITOTAL NOISE VOLTAGE CHARACTERISTICS
Noise FigureNoltage
IVCE ~ 5.0 V, IC ~ 0.1 mA. TA ~ 25°C}
11) RS
12} RS
13} RS
~
~
~
10 kIl, BW
50 kn, BW
500 n, BW
~
~
~
2N6428
2N6428A
1.0 Hz, f ~ 100 Hz
15.7 kHz, f ~ 10 Hz-10 kHz
1.0 Hz, f ~ 10Hz
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-67
•
MAXIMUM RATINGS
IB
250
mAde
IC
500
mAde
NPN
2N6515
thru 2N6517
PNP
2N6519
2N6520
PD
0.625
5.0
Watt
mW/"C
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
TJ, Tstg
-55 to +150
·C
TL
260
·C
Symbol
2N6515
2N6516
2N6519
2N6517
2N6520
Unit
Collector-Emitter Voltage
VCEO
250
300
350
Vde
Collector-Base Voltage
VCBO
250
300
350
Emitter-Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO
Rating
6.0
5.0
Base Current
Collector Current -
Continuous
Total Device Dissipation
@TA=25·C
Derate above 25·C
•
Vde
Vde
Operating and Storage Junction
Temperature Range
Lead Temperature
;;.1/16" from case for 10 seconds
"~'~"'
"
THERMAL CHARACTERISTICS
23
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
·CIW
Thermal Resistance, Junction to Ambient
R8JA
200
·CIW
ELECTRICAL CHARACTERISTICS
1 Emitter
HIGH VOLTAGE
TRANSISTORS
(TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !
~
g
-,.-
-
70
0 __
5
2N6520
200
~
~
20
10
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT IrnAi
50
70
1.0
100
2.0
3.0
5.0 7.0 10
20
30
Ic. COLLECTOR CURRENT IrnA)
50
70
100
50 70
100
FIGURE 3 -CURRENT-GAIN - BANDWIDTH PRODUCT
2N6515, 2N6516. 2N6517
2N6519,2N6520
!!\
!!\
!.~.
"b
I-
~
70
,.-
50
"
....... 1-'"
TJ - 25°C
VCE - 20 V
I- 20 MHz
V
3:
01
~ 30
f\
\
50
I
Z
~ 20
1\
1.0
2.0
3.0
5.0
7.0 10
20
30
50
~
20
.r::
10
i
\
10
70
100
V
,/
~ 30
Z
J:'
70
~
b
~
I
i
-
~100
~ 100
TJ -25°C
VCE-2oV
I- 20 MHz
/'
/
1.0
2.0
1\
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT IrnA)
IC. COLLECTOR CURRENT IrnA)
PNP
NPN
FIGURE 4 - "ON" VOLTAGES
2N6515, 2N6516. 2N6517
1.4
~
1.4
1.2
TJ - 25°C
1.2
1.0
I I I
I I I
vaElsa~) @llc~la -10
O. 8
01
>
~
0.6
c5
0.4
f
_f-"
1---
3.0
5.0 7.0 10
20
IC. COLLECTOR CURRENT IrnA)
I I I
I I I
f-
B- -
;,
VaElsa')@lclla -10
::;
.~
VCEI..,) @ Ic/la - 5.0
2.0
2~ot
~ O. 6 - --VBElon)@VCE-lo V _ . .
I 1111
I I II I
o
1.0
TJI-
w
I
V6Elsa~) @IIC)I~ -Il~
0.2
I I I
1.0 .. -
'"::;~ O.
VaElon) @VCE- 10 V
;::
>
2N6519,2N6520
I I I
30
50
70
">>' 0.4
I I I 1111
o. 2
VCEI,,') @ lelia - 10
-
1-..,.
100
1.0
2.0
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT (rnA)
MOTOROlA SMALL-SiGNAL TRANSISTORS. FETs AND DIODeS
2-70
.-
~
. VCEI..d @ Ic/la - 5.0
0
50
70 100
NPN 2N6515 thru 2N6517, PNP 2N6519, 2N6520
FIGURE 5 - TEMPERATURE COEFFICIENTS
2N6519.2N6520
2N6515. 2N6516. 2N6517
2. 5
I
~
.s
I I
I I
~'10
2.0
a
1.5
0.5 -
RWCfor VCElsatl
~
i'? -0. 5
~ -1.0
~-1 5 -
-550C to 125 0 C
~WB,forVBE
-2.5 1.0
I I
20
3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (mAl
2.0
30
15
~
1.0
II /
~
RWSforVSE
0.5
II!
0
~
-0.5
E'i
-10
50
70
-2.5
100
'J
25°C to 125°C
-550C to 250C
I
-5~OC to 1250C
.1 ..j...-+-t"
~-1.5 r- RWC for VCElsaO
-2.0
I
-2.0
~
.s
8~
to
;:;
a::
IL
I I ,/
-r I
-55~C ~oc r-- 1\
1 I
8
IC -10
IS
G 2.0
215°C lol1250C
~ 1.0
~
2.5
10
2.0
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT ImAI
50
70
100
FIGURE 6 - CAPACITANCE
2N6519.2N6520
2N6515. 2N6516. 2N6517
100
100
70
50
30
~ 20
w
u
z
i:!:
~
.
r10
-
r.3 3.0
2.0
0.2
0.5
10
z
10
~
70
~
Ccb
5.0
10
f;t-i-
20
w
u
~ 7.0
5
TJ-250C =
tit
C,b
b
30
C,b
70
50
TJ 25 0C=
50
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTSI
100
--'- t=-±-
Ccb _
5.0
-
c.i 3.0
2.0
10
200
0.2
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTSJ
NPN
100
50
200
PNP
FIGURE 7 - TURN·ON TIME
2N6515. 2N6516. 2N6517
2N6519.2N6520
10 k
700
500
300
200
.....
..... Id@VSE(off)·2.0V-
"'
Ir
]: 100
~
70
i=
50
~
.....
-
10 k
'700
VCE(offJ • 100 V
IC/IB' 5.0
TJ - 25°C
SOD
300
-
VCE(off) 100 V
IC/IS - 5.0
TJ - 25°C
Ir
200
.........,
r-.
] 100
~ 70
t= 50
........
30
30
20
20
10
Id @VSE(offl • 2.0 V
10
2.0
3.0
5.0 7.0 10
20
IC. COLLECTOR CURRENT (mAl
30
50
70
10
100
1.0
2.0
3.0
5.0 7.
10
20
30
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2·71
50
70
10
..
NPN .2N6515 thru 2N6517,. f:»NP 2N6519, 2N6520
I
FIGURE 8 - TURN-OFF TIME
2N6515. 2N6516. 2N6517
2N6619.2N6520
2.0 k
10 k
7.0 k
5.0 k
30k
!
~
70 0
50 0
VCElolI)
"tl
VCEloft) = 100 V
ICIIB = 5.0
IBI IB2
TJ 25°C
~ ",tl
t-- t--
700
50 0
r-- t--
2.0 k
'"
~1 Ok
~'
1.0 k
ts
100
IC(~~=~B~
30 0
~ 200
V=
-
TJ = 25°C
w
"}::
t-....
10 0
70
300
50
200
20
5.0 7.0
3.0
10
0
!--'
I"1001.0
20
30
50
70
0
100
2.0
1.0
3.0
5.0 7.0
10
20
30
50
70
100
IC. COLLECTOR CURRENT ImA)
IC. COLLECTOR CURRENT ImAI
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
+Vcc
2.2 k
20 k
e_---JV\/\r---+
·-4..:f~100 ms
I-
o
_ 20
'"o
10
8j 5.0
'0""
-100",
.... r- '" ri-
_ TC' 25 DC
5 100
r
-"-,:~~
~
r-,
----
-,
"
-Curvesapply
- below rated VCEO
10
0-5 0_5
10
Figure A
1--'P-1
_
--I
r-------
Pp
-~
Pp
\-'
r--- ~~
~
~---'
-
;? 2.0
'l-.
10m.
30-,---
-
- ctR¥riilMfT
____ THERMAL LIMIT
IPULSE CURVES@TC'25 DC)
---SECONO BREAKOOWN LIMIT
8
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
~: 10-';;
f-
2N65IS---:2N6516,2N6519
2N6517, 2N6520 :--
;;=
I
~I'f
----,
I
t-1
I
I
1 _ 11 ,---1
:+
2.0
5.0
10
20
50 100
200
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
'1
I
500
Duty Cvcle
=
t1 f '"
~
Ip
Peak Pulse Power'" Pp
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-73
_ _ _ _c _ _ _ _ _ _
_
•
MAXIMUM RATINGS
BC
174A,B
171A,B
BC
172A,B
Unit
Collector-Emitter Voltage
VCEO
65
45
25
Vdc
Collector-Base Voltage
VCBO
BO
50
30
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
100
mAde
350
2.B
mW
mWfC
1.0
B.O
Watt
mWfC
TJ, Tstg
-55to +150
'c
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
R9JC
125
'CIW
Thermal Resistance,
R9JA
357
'CIW
Collector Current -
•
BC
Symbol
Rating
Continuous
Total Device Dissipation
@TA = 25'C
Derate above 25'C
Po
Total Device Dissipation
@TC=25'C
Derate above 25'C
Po
Operating and Storage Junction
BCI7IA, B
BCI72A,B,C
BCI74A,B
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
:.~
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
3 Emitter
AMPLIFIER TRANSISTORS
NPN SILICON
Junction to Ambient
Refer to BC546 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
65
45
25
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 2.0 mA, IB = 0)
V(BR)CEO
BC174A,B
BC171A,B
BCl72A,B
Emitter-Base Breakdown Voltage
(IE = 100 pA, IC = 0)
V(BR)EBO
BC171A,B
BCl72A,B
BC174A,B
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, VBE = 0) TA = 125'C
6.0
6.0
6.0
ICES
-
-
-
V
nA
-
0.2
0.2
0.2
-
15
15
15
4.0
BC171 Al2A14A
BC171 B/2B/4B
BCl72C
-
-
90
150
270
-
(lc = 2.0 mA, VCE = 5.0 V)
BC171 Al2A14A
BC171 B/2B/4B
BCl72C
120
lBO
3BO
lBO
290
520
220
460
BOO
(lc = 100 mA, VCE = 5.0 V)
BC171 Al2A14A
BC171B/2B/4B
BCl72C
-
120
lBO
300
BC174A,B
BC171A,B
BCl72A,B
V
pA
ON CHARACTERISTICS
DC Current Gain
(lC = 10 j1.A, VCE = 5.0 V)
hFE
-
-
-
0.09
0.2
VBE(sat)
-
0.7
-
V
VBE(on)
0.55
-
0.7
V
Collector-Emitter Saturation Voltage (lC = 10 mA, IB = 0.5 mAl
(lC = 100 mA, IB = 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage (lc = 10 mA, IB = 0.5 mAl
Base-Emitter On Voltage (lC = 2.0 mA, VCE = 5.0 V)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-74
-
0.25
0.6
V
BC171A,B,BC172A,B,C, BC174A,B
I
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25'C unless otherwise noted)
I
Characteristic
Min
Typ
150
150
150
300
300
300
-
Cobo
-
1.7
4.5
pF
Cibo
-
10
-
pF
Symbol
Max
Unit
DYNAMIC CHARACTERISTICS SMALL·SIGNAL CHARACTERISTICS
Current·Gain Bandwidth Product
(lC ~ 10 mA, VCE ~ 5.0 V, f ~ 100 MHz
Output Capacitance
(VCB ~ 10 V, IC ~ 0, f
~
1.0 MHz)
Input Capacitance
(V BE ~ 0.5 V,IC
~
1.0 MHz)
~
0, f
Small·Signal Current Gain
(Ie ~ 2.0 rnA, VCE ~ 5.0 V, f
fT
BC171A,B
BCl72A,B
BC174A,B
MHz
hfe
~
1.0 kHz)
Noise Figure
(Ie ~ 0.2 rnA. VCE ~ 5.0 V, RS ~ 2.0 kohms,
f ~ 1.0 kHz, af ~ 200 Hz)
BC171 Al2A14A
BC171 B/2B/4B
BCl72C
125
240
450
220
330
600
260
500
900
-
2.0
2.0
2.0
10
10
10
NF
BC171A,B
BCl72A,B
BC174A,B
dB
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2·75
•
BCl82,A,B
BCl83,A,B,C
BC184,B,C
MAXIMUM RATINGS
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
50
30
30
Vdc
Collector-Base Voltage
VCBO
60
45
45
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
100
mAdc
Collector Current - Continuous
•
BC BC BC
182 183 184
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
350
2.8
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW/oC
TJ, Tst9
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AAI
1 Collector
~-@
1
2
THERMAL CHARACTERISTICS
Symbol
Max
Thermal Resistance, Junction to Case
RHJC
125
I
I
°C/W
I
I
Thermal Resistance, Junction to Ambient
R6JA
357
I
°C/W
I
Characteristic
Unit
3 Emitter
3
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to BC237 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
50
30
30
-
-
-
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 2.0 rnA, IB = 01
Collector-Base Breakdown Voltage
(lC = 10 p,A, IE = 01
V
V(BR)CEO
BC182
BC183
BC184
BC182
8C183
BC184
60
45
45
Emitter-Base Breakdown Voltage
(IE = 100 p,A, IC = 01
V(BRIEBO
Collector Cutoff Current
(VCB = 50 V, VBE = 01
(VCB = 30 V, VBE = 01
ICBO
BC182
BC183
BC184
Emitter-Base Leakage Current
(VEB = 4.0 V, IC = 01
lEBO
-
V
V(8RIC80
-
-
-
-
0.2
0.2
0.2
15
15
15
-
-
15
6.0
V
nA
nA
ON CHARACTERISTICS
DC Current Gain
(lc = 10 p,A, VCE
hFE
= 5,0 VI
BC182
BC183
BC184
40
40
100
(lc
= 2.0 mA, VCE = 5.0 VI
BC182
BC183
BCI84
120
120
250
(lc
=
BC182
BC183
BCI84
80
80
130
100 rnA, VCE
= 5.0 VI
Collector-Emitter On Voltage
(lC
(lC
Base-Emitter Saturation Voltage
(lC
Base-Emitter On Voltage
(lC
(lC
(lc
= 10 rnA, IB = 0.5 mAl
= 100 rnA, IB = 5.0 mAl'
= 100 rnA, IB = 5.0 mAIo
= 100 p,A, VCE = 5.0 V)
= 2.0 rnA, VCE = 5.0 VI
= 100 mA. VCE = 5.0 VI'
VCE(satl
VBE(satl
VBE(onl
0.55
-
-
500
800
800
-
-
-
-
0.07
0.2
0.25
0.6
V
-
1.2
V
-
V
0.5
0.62
0.83
'Pulse Test: Tp 300 5, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-76
-
0.7
-
BC182,A,B, BC183,A, B,C,BC184,B,C
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(IC = 0.5 rnA. VCE = 3.0 V, f = 100 MHz)
(lc
=
10 rnA, VCE
=
5.0 V, f
=
100 MHz)
fr
BC182
BC183
BCI84
BC182
BC183
BC184
MHz
-
100
120
140
150
150
150
200
240
280
-
-
Common Base Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
-
-
5.0
pF
Common Base Input Capacitance
(VBE = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
-
8.0
-
pF
-
500
900
900
260
500
900
Small-Signal Current Gain
(lc = 2.0 rnA, VCE = 5.0 V, f
=
Noise Figure
(lC = 0.2 rnA, VCE = 5.0 V, RS
f = 30 Hz to 15 kHz)
(lC = 0.2 rnA, VCE = 5.0 V, RS
f = 1.0 kHz, F = 200 Hz)
hfe
1.0 kHz)
BC182
BC183
BCI84
BCI82A, BC183A
BCI82B, BCI83B, BC184B
BCI83C, BC184C
125
125
240
125
240
450
-
-
NF
dB
= 2.0 kohrns,
BCI84
= 2.0 kohrns,
BC182
BC183
BCI84
-
2.0
4.0
-
2.0
2.0
2.0
10
10
4.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-77
..
BC212,A,B
BC213,A,B,C
BC214,B,C
MAXIMUM RATINGS
Rating
Symbol
Unit
Collector-Emitter Voltage
VCEO
50
30
30
Vdc
Collector-Base Voltage
VCBO
60
45
45
Vdc
Emitter-Base Voltage
VEBO
Collector Current - Continuous
•
BC BC BC
212 213 214
5.0
Vdc
IC
100
mAde
Total Device Dissipation @T A
Derate above 25°C
~
25°C
Po
350
2.8
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic
AMPLIFIER TRANSISTORS
Thermal Resistance, Junction to Case
PNPSILICON
Thermal Resistance, Junction to Ambient
Refer to BC307 for graphs,
ELECTRICAL CHARACTERISTICS (TA
I
Characteristic
I
~ 25°C unless otherwise noted)
Type
I
Symbol
Min
Typ
Max
50
30
30
--
--
--
--
60
45
45
-
-
--
----
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IIC ~ 2.0 mAde, 18 = 0)
Collector-Base Breakdown Voltage
IIc ~ lO~A, IE ~ 0)
Emitter-Base Breakdown Voltage
liE ~ lO~Adc, IC ~ 0)
Collector-Emitter Leakage Current
IVCB ~ 30 V)
Emitter-Base L3akage Current
IVEB = 4 V, Ie ~ 0)
VIBR)CEO
BC212
BC213
BC214
Vdc
VIBR)CBO
BC212
BC213
BC214
VIBR)EBO
5
5
5
BC212
BC213
BC214
ICBO
BC212
BC213
BC214
lEBO
BC212
BC213
BC214
--
----
15
15
15
-
--
15
15
15
--
-
hFE
~
5 Vdc)
BC212
BC213
BC214
40
40
100
----
~
5 Vdc)
BC212
BC213
BC214
60
80
140
-
IIC
~
2 mAde, VCE
Ilc
~
100 mAde, VCE
~
5 Vdc)'
-
BC212, BC214
BC213
-
120
140
MQ.TOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-78
Vdc
nAdc
--
nAdc
ON CHARACTERISTICS
DC Current Gain
IIC ~ 10 ~Adc, VCE
Vdc
-
600
-
BC212, A, B, BC213, A, B, C, BC214, B, C
ELECTRICAL CHARACTERISTICS leontinlJed) ITA
Characteristic
~ 25°C unless otherwise noted)
Symbol
Type
Collector-Emitter Saturation Voltage
IIC = 10 mAde, IB = 0.5 mAde)
(lc = 100 mAde, IB = 5 mAde)'
VCElsat)
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 5 mAde)
VBElsat)
Base-Emitter on Voltage
(lc = 2 mAde, VCE = 5 Vde)
VBElon)
Min
Typ
Max
--
-
--
0.10
0.25
--
1.00
1.4
0.6
0.62
0.72
Unit
Vde
0.6
Vde
Vde
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 mAde, VCE = 5 Vde,
1= 50 MHz)
----
BC212
BC214
BC213
Common-Base Output Capacitance
IVCB ~ 10 Vde, IC = 0, I = MHz)
Noise Figure
IIC = 0.2 mAde, VCE = 5 Vde,
RS = 2 Kohms, I = 30 Hz to 15 KHz)
IIC = 0.2 mAde, VCE ~ 5 Vde,
RS = 2 Kohms, I = 1 KHz, I = 200 Hz)
Small Signal Current Gain
IIC = 2 mAde, VCE = 5 Vde, f
MHz
IT
Cob
1 KHz)
--
pF
--
-
BC214
--
--
BC213
BC212
--
-
10
10
---
--
6.0
dB
NF
-hie
=
280
320
360
BC212
BC213
BC214
BC212A, BC213A
BC212B, BC213B,
BC214B
BC213C,BC214C
60
80
140
100
200
200
'350
'Pulse-test: Tp 300 s, Duty-cycle 2%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-79
2
-
300
400
400
600
•
BC237,A,B,C
BC238,A,B,C
BC239,B,C
MAXIMUM RATINGS
Symbol
Rating
BC
BC
BC
Unit
237 238 239
Collector-Emitter Voltage
VCEO
45
25
25
Vdc
Collector-Emitter Voltage
VCES
50
30
30
Vdc
VEBO
6.0 5.0 5.0
Vdc
Emitter-Base Voltage
IC
100
mAde
Total Device Dissipation @TA
Derate above 25 cC
= 25 cC
Po
350
2.8
mW
mW/cC
Total Device Dissipation @TC
Derate above 25 C C
= 25 cC
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
-55 to +150
·C
Collector Current - Continuous
•
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
ReJC
R(lJA
Thermal Resistance, Junction to Ambient
I
I
Max
125
I
I
cC/W
I
I
I
357
I
°C/W
I
Unit
AMPLIFIER TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
.
I
Type
I
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 2.0 mA, IB = 0)
BC237
BC238
BC239
V(BR)CEO
45
25
25
V
Emitter-Base Breakdown Voltage
(IE = 100 !lA. IC = 0)
BC237
BC238
BC239
V(BR)EBO
6
V
BC238
BC239
BC237
ICES
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE
= 50 V,
VBE
= 0)
(VCE
= 30 V,
= 50 V,
VBE
= 0)
= 0)
(VCE
VBE
TA
TA
= 125 cC
= 125 cC
5
5
BC238
BC239
BC237
0.20
0.20
0.20
15
15
15
nA
0.20
0.20
0.20
4
4
4
!lA
ON CHARACTERISTICS
DC Current Gain
(lc = 10 !lA, VCE
= 5 V)
hFE
BC237A/238A
BC237B/238B/239B
BC237C/238C/239C
(lc
(lc
=2
mA. VCE
= 100 mA,
=5
VCE
BC237
BC238
BC239
BC237A/238A
BC237B/238B/239B
BC237C/238C/239C
V)
=5
90
150
270
V)
Collector-Emitter On Voltage
(lc = 10 mA,lB = 0.5 mAl
(lc = 100 mA,lB = 5 mAl
120
120
120
120
200
380
120
180
300
BC237A/238A
BC237B/238B/239B
BC237C/238C/239C
BC237/BC238/BC239
BC237/BC239
BC238
Base-Emitter Saturation Voltage
(IC = 10 mA. IB = 0.5 mAl
(lc = 100 mA. IB = 5 mAl
Base-Emitter On Voltage
(Ie = 100 !lA, VCE = 5 V)
(lc = 2 rnA, VCE = 5 V)
(lc = 100 rnA, VCE = 5 V)
170
290
500
800
800
800
220
460
800
VCE(sat)
0.07
0.20
0.20
0.60
0.8
V
VBE(sat)
0.60
0.83
1.05
V
V
VBE(on)
0.55
0.50
0.62
0.83
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-80
0.70
B,C, BC238,A, B,C, BC239,B,C
BC237,A,
ELECTRICAL CHARACTERISTICS (continued) (TA
I
Characteristic
= 25°C unless otherw,se noted)
I
Type
Symbol
I
Typ.
Min.
Max.
Unit
DYNAMIC CHARACTERISTICS
Current-Gain Bandw,dth Product
(lc = 0.5 mA, VCE = 3 V, I = 100 MHz)
(lc = lamA. VCE = 5 V, f = 100 MHz)
100
120
140
BC237
BC238
BC239
150
150
150
Collector-Base Capacitance
(VCB = 10 V, IC = 0, I = 1 MHz)
Cabo
Emitter-Base Capacitance
C,bo
= 0.5
(VBE
V, IC
= 0, f = 1 MHz)
NOise Figure
(lc = 0.2 mA, VCE = 5 V, RS
f = 30 Hz to 15 KHz)
(IC = 0.2 mA. VCE = 5 V, RS
f = 1 KHz, M = 200 Hz)
=2
2
4
BC237
BC238
BC239
2
2
2
10
10
4
FIGU~E
2. - "SATURATION" AND "ON" VOLTAGES
0
JcIEI! 1'0 v _
I. ll,lll 1111
08
6 ......
eo
;::
\
N
3
01
01
o~
\\
5
o. 2
VCE(~ill) ~
10
50
10
10
~o
'DO
02 0,3
0,50,7 1 0
2.0 3.U
.
"
\.07.0 10
'"
........-
VCE
'U
'"
of-- .
V
'A 25 uC
-- -.
f0
-I'-...
r-
0
15'e- -
r---.
COb
I'-
0
,
0
10
~
C,b
-
r--
0
o~
...... r-......
0
07
10
10
30
~
U 70
10
5070 100
f---
--
._-
0
TA
~
I
20 30
FIGURE 4 - CAPACITANCES
t=
~ 20 0
o
'0.......
Ie COLLECTOR CURAENT (mAde)
0
-
0
I'j
a1
100
30 0
80
lellB
.I
0
,0
~
~
I.-
V E(on)@VeE: = 10 V
04
FIGURE 3 - CURRENT GAIN-BANDwiDTH PROOUCT
10 0
~
f-
"> o. J
'0 0
~
le;(B ~ 10
l-
Ie COLLECTOR CURRENT (mAde!
'"
r§J
I
6
o
~
II
VSE(s.t1l
7
I
11
I1II11
o. 8
II
10
TIA
0, 9 -
2~O('
o
~
dB
BC239
Kohms,
TA
'"
pF
Kohms,
0
u
pF
4.50
NF
=2
~
~
200
240
280
8.0
fiGURE 1 - NORMALIZED DC CURRENT GAIN
~
MHz
IT
BC237
BC238
BC239
10
30
o.
50
Ie. COLLECTOR CURRENT (mAde)
00 08 I 0
20
40
60 8010
VR. REvERSE VOLTAGE IVOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-81
20
I".0
•
BC237,A, B,C, BC238,A,B,C, BC239, B,C
FIGURE 5 - BAse SPREADING RESISTANce
,.
v;
11 0
--r-
%
e
~
160
r---..
z
~
~
'"oz
.
!
I'
150
.......
VCE • IOV
I • 10kHz
TA • 2S·C
140
I"
:l;
~
'"~
130
~
12 0
01
02
0J
0.5
10
2.0
JO
50
10
IC. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
2-82
8C307,A,8,C
thru
MAXIMUM RATINGS
Rating
Symbol
BC
BC
8C309,A,8,e
Unit
BC
307 308 309
Collector-Emitter Voltage
VCEO
45
25
25
Vdc
Collector-Base Voltage
VCBO
50
30
30
Vdc
Emitter-Base Voltage
VEBO
Collector Current - Continuous
5.0
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
IC
100
mAdc
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
350
2.B
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.0
B.O
Watt
mW;oC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
, Collector
":~
3 Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
AMPLIFIER TRANSISTORS
Thermal Resistance, Junction to Case
RRJC
125
°C/W
Thermal Resistance, Junction to Ambient
ROJA
357
°C/W
PNP SILICON
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
I
Characteristic
Type
I
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
BC307
BC30B
BC309
V(BR)CEO
45
25
25
-
Emitter-Base Breakdown Voltage
(IE = 100 ~Ade, IC = 0)
BC307
BC30B
BC309
V(BR)EBO
5
-
-
0.2
0.2
0.2
0.2
0.2
0.2
15
15
15
4.0
4.0
4.0
90
150
270
-
Collector-Emitter Leakage Current
(VCES = 50 V, VBE = 0)
(VCES = 30 V, VBE = 0)
(VCES
(VCES
= 50
= 30
V, VBE
V. VBE
= 0)
= 0)
TA
TA
= 125°C
= 125°C
-
-
-
-
5
5
Vdc
-
-
Vde
Vde
nA
ICES
BC307
BC30B
BC309
BC307
BC30B
BC309
~A
ON CHARACTERISTICS
DC Current Gain
(lc = 1 0 ~Ade, VCE
(lc
(lc
=2
=
mAde, VCE
=5
=5
100 mAde, VCE
hFE
Vde)
Vde)
=5
Vde)
BC307 A/30BA/309A
BC307B/30BB/309B
BC307C/30BC/309C
-
BC307
BC30B
BC309
BC307A/30BA/309A
BC307 B/308B/309B
BC307C/30BC/309C
120
120
120
120
200
420
-
8C307A/308A/309A
8C3078/3088/3098
8C307C/30BC/309C
Collector-Emitter Saturation Voltage
(lc = 10 mAde, 18 = 0,5 mAde)
(IC = 10 mAde, 18 = see Note 1)
(lC = 100 mAdc, 18 = 5 mAde)
VCE(sat)
8ase-Emitter Saturation Voltage
(lc = 10 mAde, 18 = 0.5 mAde)
(lc = 100 mAdc, 18 = 5 mAdc)
V8E(sat)
8ase-Emitter on Voltage
(lc = 2 mAde, VCE = 5 Vdc)
V8E(on)
Notel: IC
= 10 mAdc on
-
170
290
500
-
-
120
180
300
-
0.10
0.30
0.25
-
0.70
1.00
-
0.30
0.60
Vde
Vdc
= 11
0.62
mAdc, VCE
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-83
-
BOO
BOO
BOO
220
460
800
Vdc
0.55
the constant base current characteristic, which Yields the pOint IC
-
0.70
=1V
•
BC307, A, B, C THRU BC309, A, B, C
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Characteristic
Type
Symbol
Min.
Typ.
Max.
Unit
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(IC = 10 mAde, VCE = 5 Vdc, f = 50 MHz)
fT
BC307
BC308
BC309
Collector-Base Capacitance
(VCB = 10 Vdc, IC = 0, f = 1 MHz)
•
Ccbo
Noise Figure
(lc = 0.2 mAde, VCE = 5 Vdc,
RS = 2 Kohms, f = 30 Hz to 15 KHz)
(lc
RS
= 0.2 mAde, VCE = 5 Vdc,
= 2 Kohms, f = 1 KHz, f = 200
~
II:
II:
Hz)
6.0
dB
2
4
BC307
BC308
BC309
-
2
2
2
10
10
4
-
FIGuRE 2 - "SATURATION" AND "ON" VOLTAGES
1. 0
VCE "10V
TA" 25"C
O.
'r-
TIA
I I II III
~ ~5.~
VIEIoot) .lcJlB "10
0.1
j.-
~ O. 7
1.0
I---
VIE(..). VCE " 10 V
~ O.6
::: o.7
a
:il
N
O.
::;
c
pF
-
-
::>
..
-
BC309
FIGURE 1 - NORMALIZED DC CURRENT GAIN
'"
-
MHz
-
280
320
360
NF
z.D
~ 1.5
-
"\.
\.
5
~ O. 5
c
~ O.4
o
>
->
O.3
II:
o
Z
i
O. Z
O.3
VCE!IotJ .lcJlB "10
O. 1
O.Z
02
5.0
Z.O
1.0
0.5
10
zo
50
0
0.1
ZOO
100
O.Z 03 0.5 0.7 1.0
Z.O 3.0 5.0 7.0 10
-
0
Cib
7.01'-..
~
150
100
/
I
Vel"IOV f TA"Z!I"C
~
-
0
...........
TA"25"C- f---
. . . . r--..
0
111
eo.
Z.0
1.0
Z.O
3.0
u
10
zo
1.0
0.4
30
0.& 0.11.0
Z.O
4.0
&.0 1.0 10
VR, REVERSE VOLTAGE (VOLTS)
Ie. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-84
-
'-
811
"
50 70 100
FIGURE 4 - CAPACITANCES
FIGURE 3 - CURRENT-GA1N-BANDIIVIDTH PRODUCT
ZOO
ZO 30
IC, COLLECTOR CURRENT (mAde)
Ie. COLLECTOR CURRENT (mAde)
20
30
40
BC307, A, B, C THRU BC309, A, B, C
FIGURE 5 - OUTPUT ADMITTANCE
FIGURE 6 - BASE SPREADING RESISTANCE
so
1.0
;
V
,.u;. o. r VCEf--10!.OkHl
§ D.31-- TA-25oc
...
§
:I:
~ 0.
...~c
~
~~:~:'
1;;.
=
....
//
•
VCE"'OV
u
./
u
g
...
2' 40
z
.
;;' 20
0.0&
....
j
3
•
0.'
....
II;
~ 0.03
0.0
r--t--
::I
I-'"
0.2
0.5
1.8
2.0
5.0
•0
'"0.'
10
0.2
U
0.5
'.0
U
3.G
Ie. COLLECTOR CURRENT lnoMoI
IC. COLLECTOR CURRENT lmAde'
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-85
5.G
10
•
BC317,A,B
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
100
mAde
Total Device Dissipatio'n @ TA = 25°C
Derate above 25°C
Po
350
2.8
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.0
8.0
Watt
mW/"C
TJ, Tstg
-55to +150
°c
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29·04, STYLE 14
TO·92 (TO·226AA)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
125
°C/W
Thermal Resistance, Junction to Ambient
R6JA
357
°C/W
Characteristic
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to BC549 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage
(lC = 1.0 rnA, IB = 0)
V(BR)CEO
45
-
Collector-Emitter Breakdown Voltage
(lC = 100 /LA VBE = 0)
V(BR)CES
50
-
-
Collector-Base Breakdown Voltage
(IC = 100 /LA, IE = 0)
V(BR)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 /LA, IC = 0)
V(BR)EBO
6.0
-
-
Vdc
-
-
30
nAdc
0.57
0.63
0.72
0.77
-
0.14
0.6
-
0.7
0.85
-
-
-
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 V, IE = 0)
ICBO
Vdc
Vdc
ON CHARACTERISTICS
Base-Emitter On Voltaga
(lC = 2.0 rnA, VCE = 5.0 V)
(lc = 10 rnA, VCE = 5.0 V)
VBE(on)
Collector-Emitter Saturation Voltage
(lC = 100 rnA IB = 5.0 rnA)
VCE(sat)
Base·Emitter Saturation Voltage
(lC = 10 rnA, IB = 0.5 rnA)
(lC = 100 rnA IB = 5.0 rnA)
VBE(sat)
DC Current Gain
(lC = 10 JLA, VCE
(lc
-
5.0 V)
= 2.0 rnA, VCE = 5.0 V)
-
BC317A
BC317B
40
90
150
-
BC317A
BC317B
110
200
180
290
450
450
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2-86
Vdc
Vdc
hFE
=
Vdc
BC317, A, B
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Spot Noise Figure
(lC = 200 pA, VCE = 5.0 V,
RS = 2.0 kil, f = 1.0 kHz, BW
Output Capacitance
(VCB = 10 V, IE = 0, f
Input Capacitance
(VEB = 0.5 V, IC
=
= 0, f =
=
NF
-
2.0
6.0
dB
Cob
-
2.5
4.0
pF
Cib
-
11.5
-
pF
fr
-
280
-
MHz
h re
-
2.0
-
Xl0-4
hie
-
5.0
-
Kohms
hoe
-
20
-
j.tmhos
125
240
220
330
260
500
200 Hz)
1.0 MHz)
1.0 MHz)
Current-Gain Bandwidth Product
(lC = 10 rnA, VCE = 5.0 V)
Voltage Feedback Ratio
(lc = 2.0 rnA, VCE = 5.0 V, f
=
1.0 kHz)
Input Impedance
(lC = 2.0 rnA, VCE
= 5.0 V, f =
1.0 kHz)
Output Admittance
(lC = 2.0 rnA, VCE
=
1.0 kHz)
5.0 V, f
=
Small-Signal Current Gain
(lC = 2.0 rnA, VCE = 5.0 V, f = 1.0 kHz)
hfe
BC317A
BC317B
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-87
•
BC320,A,B
MAXIMUM RATINGS
Rating
Symbol
Value
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
150
mAde
Collector Current -
Continuous
Unit
Total Device Dissipation @ TA
Derate above 25'C
~
25'C
Po
625
5.0
mW
mWf'C
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
Po
1.5
12
Watt
mWf'C
TJ, Tstg
-55 to +150
'c
Operating and Storage Junction
Temperature Range
CASE 29-04. STYLE 14
TO-92 (TO-226AA)
2 Collector
.:~
1 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
'CIW
Thermal Resistance, Junction to Ambient
ROJA
200
'CIW
Characteristic
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to BC559 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
I
Typ
Max
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC ~ 1.0 mA, IB ~ 0)
V(BR)CEO
45
-
-
Vdc
Collector-Emitter Breakdown Voltage
(lC ~ 100 !LA. VBE ~ 0)
V(BR)CES
50
-
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 100 !LA. IE ~ 0)
V(BR)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 100/-IA, IC ~ 0)
V(BR)EBO
6.0
-
-
Vdc
ICBO
-
-
30
nAdc
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 20 V, IE ~ 0)
ON CHARACTERISTICS
Base-Emitter On Voltage
(lC ~ 2.0 mA, VCE ~ 5.0 V)
(lc ~ 10 mA, VCE ~ 5.0 V)
VBE(on)
Collector-Emitter Saturation Voltage
(lC ~ 100 mAo IB ~ 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC ~ 10 mA, IB ~ 0.5 mAl
(lC ~ 100 mA, IB ~ 5.0 mAl
VBE(sat)
OC Current Gain
(lC ~ 10 !LA, VCE
(lc
~
Vdc
-
-
0.72
0.77
0.35
0.5
-
0.77
0.99
-
BC320A
BC320B
40
50
100
-
BC320
BC320A
BC320B
110
110
200
-
450
220
450
0.57
0.68
Vdc
hFE
~
2.0 mAo VCE
5.0 V)
~
5.0 V)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-88
Vdc
BC320, A, B
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Unit
NF
-
2.0
6.0
dB
Output Capacitance
(VCB ~ 10 V, IE ~ 0, f ~ 1.0 MHz)
Cob
-
3.0
4.0
pF
Input Capacitance
(VEB ~ 0.5 V, IC ~ 0, f ~ 1.0 MHz)
Cib
-
16
-
pF
Current·Gain Bandwidth Product
(IC ~ 10 rnA. VCE ~ 5.0 V)
tr
-
250
-
MHz
125
125
240
-
500
260
500
Characteristic
SMALL·SIGNAL CHARACTERISTICS
Spot Noise Figure
(lC ~ 200 pA, VCE ~ 5.0 V,
RS ~ 2.0 k!l, f ~ 1.0 kHz, BW
BC320
~
200 Hz)
Small·Signal Current Gain
(lc ~ 2.0 rnA, VCE ~ 5.0 V, f ~ 1.0 kHz)
hfe
BC320
BC320A
BC320B
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-89
•
BC327, -16, -25, -40
BC328, -16, -25, -40
MAXIMUM RATINGS
Rating
Symbol
BC327
BC32S
Unit
Collector-Emitter Voltage
VCEO
45
25
Vdc
Collector-Base Voltage
VCBO
50
30
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current -
•
IC
800
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Po
1.5
12
Watt
mWrC
TJ, Tstg
-55to +150
°c
Derate
~bove
Continuous
25°C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Vdc
~()"-
"
23
3 Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
°CIW
Thermal Resistance, Junction to Ambient
R8JA
200
°CfW
Characteristic
ELECTRICAL CHARACTERISTICS (TA
=
AMPLIFIER TRANSISTORS
PNP SILICON
25°C unless otherwise noted,)
I
Characteristic
Symbol
Min
Typ
Max
45
25
-
-
50
30
-
5.0
-
-
-
-
100
100
-
-
100
100
-
630
250
400
630
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 rnA, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 100 pA, IE = 0)
Vdc
V(BR)CEO
BC327
BC328
Vdc
V(BR)CES
BC327
BC328
Emitter-Base Breakdown Voltage
(IE = 10p.A, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC327
BC328
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC327
BC328
ICBO
ICES
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
lEBO
Vdc
nAdc
nAdc
-
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 100 rnA, VCE = 1.0 V)
-
hFE
BC327/BC328
BC327 -16/BC328-16
BC327-25/BC328-25
BC327 -4Q/BC328-40
100
100
160
250
40
-
Base-Emitter On Voltage
(lC = 300 rnA, VCE = 1.0 V)
VBE(on)
-
-
Collector-Emitter Saturation Voltage
(lC = 500 rnA, IB = 50 rnA)
VCE(sat)
-
Cob
tr
(lc = 300 rnA, VCE = 1.0 V)
1.2
Vdc
-
0.7
Vdc
-
11
-
pF
-
260
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(lC = 10 rnA, VCE = 5.0 V)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-90
BC327, -16, -25, -40, BC328, -16, -25, -40
FIGURE 1 - THERMAL RESPONSE
0
iC-n 11'
-
\
~
3-02
02
III
1 005
7 U(J?
5
~SINGll
01
.,.
00 3
110
2"
-
....
-
BUl --
- - IIJC(t) ~ (t) UJe
0Je.:: lOQOCiW Molx
PUIS
'
t'~
vi
n002
0005
J
'2
SINGLE PU LSE
II II
no 1
nOOl
~
-
?
002
005
01
02
10
05
•
o
READ TIM! AT II
TJ(pk) . Te
DUTYCYCLE,D'IIl{
001
0JA(tj.:: 1(1) OJA
(}IA' 357°C WMdX
CURVES APPLY FOA POWER
PULSE. TRAIN SHOWN
20
50
10
P(pk) (/Jc(!J
20
50
100
I, TIME (SECONDS)
FIGURE 2 - ACTIVE REGION SAFE OPERATING AREA
FIGURE 3 - DC CURRENT GAIN
1000
100 0
Is R===lm,'\
;;'
E
~I~,
<%'
<%'
fA = 25 C
=>
U
<%'
0
lOOps
'"
§
100
VCE - 1 V
TA-25"C
HTJ-135 'C
"-
de
TC - 25 'C
r
I'
~
.",
1\
I'-.
a
'"
......
~
u
"-
CURRENT LlMIl
THERMAL LIMIT
1 - f--SECONO BnEAKOOWN LIMIT
--
(applies beluw r,dled VCEO}
10
1
10
'"
30
1a
01
100
VCE, COLLECTOR EMITTER VOLTAGE
FIGURE 4 - SATURATION REGION
FIGURE 5 - "ON"
"
~ 0B
1\
"
~
o
....
'"
....
~
Ic-l0mA
0.4
~
2
~
\
6
c:i:
o
VOLTAGES
Ic-l00mA
IC
=
I I III
II
I~ - 15010 I~A
\
300 rnA
I
i'
~
>
1000
t12ll,~
~
2:
>
100
10
IC, COLLECTOR CURRENT (mAl
0
<%'
-
u
o
r--
2~~~-r+r~---r-r~~~--~~k~rH~
i"-
01
t---t----t-T-1-t-t-tt1- VCE(sati ", ICliB'.:-:...;ll1-'""''''',-+V-i--t+t+H1
o~t::±:I::::!±I±J~t::t:I-'1trrJJllJrI~LU~
10
10
100
100
IC, COLLECTOR CURRENT (mAl
'B, BASE CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-91
1000
BC327, -16, -25, -40, BC328, -16, -25, -40
FIGURE 7 - CAPACITANCES
FIGURE 6 - TEMPERATURE COEFFICIENTS
G
1
II
100
:111
\I i III
(JVC for VCE(sat)
0
0
-... t--...
r---
C,b
1
2
---
......
UVB for VBE
10
100
Cob
I
1
1
1000
10
0.1
VR, REVERSE VOLTAGE IVolts)
IC, COLLECTOR CURRENT
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2-92
100
BC337, -16, -25, -40
BC33S, -16, -25, -40
MAXIMUM RATINGS
Symbol
BC337
BC33S
Unit
Collector-Emitter Voltage
Rating
VCEO
45
25
Vdc
Collector-Base Voltage
VCBO
50
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
800
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
mWrC
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
~~
Watt
3 EmItter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
ROJA
200
°CIW
Characteristic
AMPLIFIER TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mA, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 100 /LA, IE = 0)
V(BR)CEO
BC337
BC338
BC337
BC338
V(BR)EBO
ICBO
BC337
BC338
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
-
-
50
30
-
-
5.0
-
-
-
-
100
100
ICES
BC337
BC338
-
-
100
100
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
lEBO
100
100
160
250
60
-
630
250
400
630
Vdc
-
Vdc
V(BR)CES
Emitter-Base Breakdown Voltage
(IE = 10 /LA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
45
25
-
Vdc
nAdc
-
nAdc
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mA, VCE
=
1.0 V)
(lc = 300 rnA, VeE
=
1.0 V)
hFE
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337 -40/BC338-40
-
-
Base-Emitter On Voltage
(lC = 300 mA, VCE = 1.0 V)
VBE(on)
-
-
1.2
Vdc
Collector-Emitter Saturation Voltage
(lc = 500 mA, IB = 50 rnA)
VCE(sat)
-
-
0.7
Vdc
Cob
-
15
-
pF
fr
-
210
-
MHz
SMALL-8IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f
=
1.0 MHz)
Current-Gain Bandwidth Product
(lC = 10 mA, VCE = 5.0 V)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-93
•
BC337, -16, -25, -40, BC338, -16, ~25, -40
FIGURE 1 - THERMAL RESPONSE
10
07
05
,.
~
"
N
01 f----Oll
--
1 005
007
005
003
001
00
;;;::;
-- BUl -'""
;;;-
- - °JCltl"ltIOJC
0JC" lOOoC/W Max
~SINGLEPUlSj
F--0OI
SINGLE PULSE
II II
00 1
0001
-t~~
yl
~
~
-
"---
03 r---01
>
_.
-
ro "05
0001
0005
DUTY CYCLF, 0
001
001
00\
01
01
t. TIME ISECONOSI
10
°JA(t) " r(t)UJA
IJIA" 157 oC.'W Max
o CURVES APPLY FOR PO~R
PULSE TRAIN SHOWN
READ TIME AT q
TJlpkl- TC" Plpkl 0JCltl
= "/f2
70
10
70
100
FIGURE 3 - OC CURRENT GAIN
FIGURE 2 - ACTIVE REGION SAFE OPERATING AREA
1000
1.
:---lm.,,"
f--hJ~135°C
:<
.5
...
""
f-::--- ""dc,
:l'i
'"
'"'-''"
'"
0
"-
TA = 25 °C
"
lOa
1\
~"
f'.-.
~
"" '-
0
'-'
~
CURRENT LIMIT
THERMAL LIMIT
- SECONO BREAKDOWN LIMIT
-1-
100",
\
TC - 25 'C
de
(applies below rated VCEOI
10
10
1
"
30
10~~~~UU~~~~~~~~~~L-LL-L~LUU
0.1
100
1. a
"0
~
~
~
>
ffi
r- T; ~ 25'ot
~
o
~
~
w
O. 6
-
ul
'-'
0
0.01
'"
~
o
Ic-l0mA
>
0.6
04
>-
Ic-100mA
\
, _I.
VSElon) (.• VCE - 1 V
10
"0
8 o. 2
>
VBEI"tl'''leliB~
B
Ic-500mA
0.4
111111
TA =125!e
o. B
~
'"
FIGURE 5 - "ON" VOLTAGES
10
o
1000
IC. COLLECTOR CURRENT IAmpl
FIGURE 4 - SATURATION REGION
10
100
10
Vrf COLLECTOR-EMITTER VOLTAGE
Ic-300mil
\,
O. 2
l'...J I I
ITt
0.1
VCEI"t) r.. lelia = 10
10
10
100
18. BASE CURRENT ImA)
100
IC. COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-94
1000
BC337, -16, -25, -40, BC338, -16, -25, -40
FIGURE 6 - TEMPERATURE COEFFICIENTS
I
FIGURE 7 - CAPACITANCES
100
I I 1111
II IIII
ovc lor VCE(sat)
~
w
u
z
~
U
I
10
-
C,b
:;t
OVB for VBE
;';
u
f--
II
L
II
I
10
100
E
Cob
1000
0.1
IC, COLLECTOR CURRENT (mA)
10
VR, REVERSE VOLTAGE (Volts)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-95
100
2 Collector
NPN
BC368
MAXIMUM RATINGS
~~
1 Emitter
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector- Emitter Voltage
VCES
25
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
1.0
Adc
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
800
6.4
mW
mWjOC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
2.75
22
Watt
mWjOC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
PNP
BC369
l
~()
1 Emitter
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
12
THERMAL CHARACTERISTICS
2 Collector
3
Characteristic
Thermal Resistance, Junction to Case
AMPLIFIER TRANSISTORS
Thermal Resistance, Junction to Ambient
I
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 10 mA, IB = 0)
V(BR)CEO
20
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 /LA, IE = 0)
V(BR)CBO
25
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 p,A, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
-
-
10
1.0
p,Ade
mAde
-
-
10
p,Ade
50
85
60
-
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ
ICBO
=
150'C)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
lEBO
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mAl
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
Bandwidth Product
(lC = 10 mA, VCE
=
5.0 V, f
hFE
=
tr
20 MHz)
-
-
-
375
65
-
-
MHz
COllector-Emitter Saturation Voltage
(lC = 1.0 A, IB = 100 mAl
VCE(sat)
-
-
0.5
V
Base-Emitter On Voltage
(lC = 1.0 A, VCE = 1.0 V)
VBE(on)
-
-
1.0
V
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-96
NPN BC368, PNP BC369
FIGURE 1 - DC CURRENT GAIN
200
FIGURE 2 - COLLECTOR SATURATION REGION
10
--
-r-.
~ 100
'"
It
~ oB
\
0
~
~ 70
0
""
~
04
c"
02
I~I
'iJj1
>
50
100
200
IC. COLLECTOR CURRENT (rnA)
20
500
VBE (SAT)@ 'C/'B ~ 10
I 111111
;;;
~
~
06 ,...
~
VBE
lJ....HI
rrm
I---
c:;
...
;I
"
~
~-?
"'
t-
~
g
'""
r-
filt
l-u
~
~
u
~ -16
~~'; @)V~E l, 0 V
~
HVB lor VBE
'"
u
,
~
""2 -20
004
....
'"
15
,,;
":IE
02 f- f-
CE{SATI @ IC liB ~ I
o
10 2.0
50
~
I---
III
II II
10
20
5D "00 200 5001000
IC. COLLECTOR CURRENT (rnA)
-24
t
-28
1 0 2.0
FIGURE 5 - CURRENT GAIN-BANDWIDTH PRODUCT
N
~
,.
1\
1m. I
3
25°C
~
I--'
I--'
>
:>:
"
~
FIGURE 4 - TEMPERATURE COEFFICIENT
~
'"
1'!
"
g-
TJ
-08
TJ~25°C 11111 II II
08
c:;-
1\
LWW
0010020.05010.20.5102050102050100
'8. BASE CURRENT (mAl
1000
FIGURE 3 - ON VOLTAGES
10
I
'11fr
20
10
3
3
8
u
'"
c:;
~
...
c:;
M
0
VCE ~ I 0 V
TJ ~ 25°C
.,."
06
>
"'"
50
1\
~
'"~
~
:::>
u
li
5.0 10
20
50 100 200 5001000
IC. COLLECTOR CURRENT (rnA)
FIGURE 6 - CAPACITANCE
160
300
~
TJ
;§.
25°C
~
~ 200
o
V
o
l.:
z
~ 120
V
:>:
~
o
~
~I--'
u
~
i
;;:
70
r-- t50 r-- t30
10
20
I--b-
'"
u
VCE - 10 V
TJ ~ 25°C
I ~ 20 MHz
<..i
40
13
~
........
u 80
:;
Z
;;;:
1"'-.
z
1'!
100
50
100
200
IC. COLLECTOR CURRENT (rnA)
1\
--
t - r--
"'- t:----
C,bo
t---
Cobo t -
o
500
1000
Cobo
C,bo
50
10
10
15
20
30
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-97
20
40
25
50
•
BC372, -16, -25, -40
BC373, -16, -25
MAXIMUM RATINGS
Symbol
BC
372
BC
373
Unit
Collector-Emitter Voltage
VCEO
100
80
Vdc
Collector-Base Voltage
VCBO
100
80
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
IC
1.0
Adc
Rating
Collector Current - Continuous
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
Collector 3
"~
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5.0
mW
mWjOC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mWjOC
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
RHJC
RflJA
83.3
°CjW
HIGH VOLTAGE DARLINGTON
TRANSISTORS
200
°CjW
NPN SILICON
Operating and Storage Junction
Temperature Range
Emitter 1
THERMAL CHARACTERISTICS
I
I Thermal Resistance, Junction to Case
Characteristic
I Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'
(lC = 100 pAdc, IB = 0)
V(BR)CES
BC372
BC373
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
100
80
-
-
-
-
100
80
-
12
-
-
-
-
100
100
-
100
plain range
BC372, BC373-16
BC372, BC373-25
BC372
8.0
8.0
20
40
-
-
plain range
BC372, BC373-16
BC372, BC373-25
BC372
10
10
25
60
-
Emitter-Base Breakdown Voltage
(IE = 10 I'Ade, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vde, IE = 0)
Vdc
-
Vdc
V(BR)CBO
BC372
BC373
-
ICBO
BC372
BC373
Emitter Cutoff Current
(VBE = 10 V, IC = 0)
lEBO
Vdc
nAdc
nAdc
ON CHARACTERISTICS·
DC Current Gain
(lC = 250 mAde, VCE
=
K
hFE
=
5.0 Vde)
=
-
-
160
60
160
600
Collector-Emitter Saturation Voltage
(lC = 250 mAde, IB ~ 0.2~ mAde)
VCE(sat)
-
1.0
1.1
Vdc
Base-Emitter Saturation Voltage
(lC = 250 mAde, IB = 0.25 mAde)
VBE(sat)
-
1.4
2.0
Vdc
100
200
-
MHz
(lC
100 mAde, VCE
5.0 Vde)
-
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 100 mAde, VCE = 5.0 Vdc, f
Output Capacitance
(VCB = 10 Vde, IE
=
Noise Figure
(lC = 1.0 mAde, VCE
0, f
=
=
=
fr
20 MHz)
Cob
-
10
25
pF
NF
-
2.0
-
dB
1.0 MHz)
5.0 Vde, Ra
=
100 kohm, F
=
1.0 kHz)
'Pulse Test: Pulse Width = 300 1'8, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-98
BC372, -16, -25, -40, BC373, -16, -25
FIGURE 2 - "SATURATION" AND "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
ii'!
1,6
100 K
VBEII(satiIC/IB I- 100
VCE - 5 V
1,4
1,2
./
TA - 250C
I--
VV
NTA
~
JW
---
I ............ V
ii
~ 0,8
C;
OJ
./
VBE ON I ~CE ~ 5 VI
1
w
>
1.--1---
II~
TAH:WC
~satl
0,6
1--- i--~
IcllB' 100
0,4
0,2
o
1K
1000
100
10
1
5
500
FIGURE 4 - CAPACITAN.CES
FIGURE 3 - CURRENT GAIN BANDWIDTH PRODUCT
£1000
~
100
10
IC, COLLECTOR CURRENT (mAl
IC, COLLECTOR CURRENT (mAl
100
VCE - 5V, TJ
25'C
to:::>
OJ
~
C,b
c;=: ::::::
I
>OJ
~z
~t-
'r--.
100
;;\
z
-
~
f--
13
t:-
ID
0,6
10
100
1
01
600
10
VR, REVERSE VOLTAGE (VOLTSI
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-99
100
•
BC413,B,C
BC414, B,C
MAXIMUM RATINGS
Symbol
BC
413
BC
414
Unit
Collector-Emitter Voltage
VCEO
30
45
Vdc
Collector-Base Voltage
VCBO
45
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAdc
Rating
Collector Current - Continuous
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 CoUector
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
350
2.B
mW
mWjOC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.0
B.O
Watt
mWjOC
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
RHJC
125
°CjW
R8JA
357
°CjW
Operating and Storage Junction
Temperature Range
~~
3 Emitter
THERMAL CHARACTERISTICS
I
Characteristic
I Thermal Resistance, Junction to Case
I Thermal Resistance, Junction to Ambient
LOW NOISE TRANSISTORS
NPN SILICON
Refer to BC549 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAdc,lB = 0) BC413
BC414
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 10 flAde, IE = 0) BC413
BC414
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 flAdc,IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
Vdc
30
45
Vdc
45
50
Vde
5
ICBO
=+
15
5
125°C)
Emitter Cutoff Current
(VEB = 4 Vdc, IC = 0)
nAde
~de
nAdc
lEBO
15
ON CHARACTERISTICS
DC Current Gain
(lc = 10 flAdc, VCE
(IC
=2
mAdc, VCE
= 5 Vde)
= 5 Vde)
hFE
BC413BjBC414B
BC413CjBC414C
BC413BjBC414B
BC413CjBC414C
BC413jBC414
100
100
lBO
3BO
lBO
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 0.5 mAde)
(IC = 10 mAde, IB = see note I)
(lc = 100 mAdc, IB = 5 mAde, see note 2)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 100 mAdc, IB = 5 mAdc)
VBE(sat)
Base-Emitter On Voltage
(lc = 10 ~dc, VCE = 5 Vdc)
(lc = 1 00 ~dc, VCE = 5 Vdc)
(IC = 2 mAde, VCE = 5 Vde)
VBE(on)
150
270
290
500
350
460
BOO
BOO
0.075
0.3
0.25
0.25
0.6
0.6
Vde
Vdc
1.1
Vdc
0.55
0.52
0.55
0.62
0.75
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 10 mAdc, VCE = 5 Vdc, f = 100 MHz)
250
Collector-Base Capacitance
(VCE = 10 Vdc, IE = 0, f = 1 MHz)
Noise Figure
(lc = 200 ~dc, VCE
f = 30 Hz - 15 KHz)
Notel: IB
IS
MHz
fT
pF
Ccbo
2.5
NF
= 5 Vdc,
Rs
=2
dB
KQ,
0.6
2.5
Note 2: Pulse test = 300 flS - Duty cycle = 2%
value for which IC = 11 mA at VCE = 1 V
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-100
BC415,B,C
BC416,B,C
MAXIMUM RATINGS
Rating
Symbol
BC
BC
415
416
CASE 29-04, STYLE 17
TO-92 ITO-226AA)
Unit
Collector-Emitter Voltage
VCEO
35
45
Vdc
Collector-Base Voltage
VCBO
45
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
100
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
350
2.B
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
1.0
B.O
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
1 Collector
3 Emitter
THERMAL CHARACTERISTICS
LOW NOISE TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
R~JC
125
°C/W
Thermal Resistance, Junction to Ambient
R8JA
357
°C/W
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0) BC415
BC416
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 10 ~dc, IE = 0) BC415
BC416
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 ~Adc, IC = 0)
V(BR)EBO
Vdc
35
45
Vdc
45
50
Vdc
5
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = + 125°C)
ICBO
Emitter Cutoll Current
(VEB = 4 Vdc, IC = 0)
lEBO
15
5
nAdc
~Adc
nAdc
15
ON CHARACTERISTICS
DC Current Gain
(lc = 1 0 ~Adc, VCE = 5 Vdc)
(lc = 2 mAdc, VCE = 5 Vdc)
hFE
BC415B/BC416B
BC415C/BC416C
BC415B/BC416B
BC415C/BC416C
BC415/BC416
100
100
180
380
120
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 0.5 mAde)
(lc = 10 mAde, IB·= see note I)
(lc = 100 mAde, IB = 5 mAdc, see note 2)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 5 mAdc)
VBE(sat)
Base-Emitter On Voltage
(lc = 10 ~dc, VCE = 5 Vdc)
(lc = 1 00 ~Adc, VCE = 5 Vdc)
(lc = 2 mAde, VCE = 5 Vdc)
VBE(on)
150
270
290
500
350
460
800
800
Vdc
0.075
0.3
0.25
0.25
0.6
Vdc
1.1
Vdc
0.55
0.52
0.55
0.62
0.75
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC = 10 mAdc, VCE = 5 Vdc, I = 100 MHz)
250
Collector-Base Capacitance
(VCE= 10 Vdc, IE = 0, I = 1 MHz)
IS
pF
Ccbo
2.5
NOise Figure
(lc = 200 ~Adc, VeE = 5 Vdc, RS = 2 KO,
f = 30 Hz - 15 KHz)
Notel: IB
MHz
fT
dB
NF
0.5
value for which IC = 11 rnA at VCE = 1 V
Note 2: Pulse test = 300
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETsAND DIODES
2-101
2.0
~s
- Duty cycle = 2%
•
BC445,A
BC447,A,B
BC449,A,B
MAXIMUM RATINGS
Rating
•
Symbol
Unit
BC BC BC
445 447 449
VCEO
60
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
300
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
80 100
Vdc
80 100
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Collector-Emitter Voltage
THERMAL CHARACTERISTICS
Characteristic
I
I
I Thermal Resistance, Junction to Case I
I Thermal Resistance, Junction to Ambient I
Symbol
RHJC
R6JA
I
I
I
Max
83.3
200
I
I
I
Unit
HIGH VOLTAGE TRANSISTORS
°C/W
NPN SILICON
°C/W
Refer to MPS8098 for graphs.
I
ELECTRICAL CHARACTERISTICS
(TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage<
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100!tA, IE = 0)
V(BR)CEO
BC445
BC447
BC449
Emitter-Base Breakdown Voltage
(IE = 10 !tAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 80 Vde, IE = 0)
60
80
100
-
5.0
-
-
-
-
V(BR)CBO
BC445
BC447
BC449
V(BR)EBO
ICBO
BC445
BC447
BC449
Vde
-
60
60
100
-
Vde
Vdc
nAdc
-
100
100
100
-
460
220
460
ON CHARACTERISncs'
DC Current Gain
(lc = 2.0 rnA, VCE
= 5.0 V)
(lc
=
10 mA, VCE
=
(lc
=
100 rnA, VCE
5.0 V)
= 5.0 V)
hFE
BC4451447/449
BC445A1447Al449A
BC447B/449B
BC445I447/449
BC445A1447Al449A
BC447B1449B
BC4451447/449
BC445A1447 Al449A
BC447B/449B
50
120
180
50
100
160
50
60
90
-
-
-
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
-
0.1
0.25
Vdc
Base-Emitter Saturation Voltage
(IC = 100 mAde, IB = 10 mAde)
VBE(sat)
-
0.85
-
Vdc
Base-Emitter On Voltage
(lC = 2.0 rnA, VCE = 5.0 V)
(lc = 100 rnA, VCE = 5.0 V)<
VBE(on)
0.55
-
-
0.8
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 50 mAde, VCE = 5.0 Vde, f = 100 MHz)
'Pulse Test: Pulse Width", 300 p.s, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-102
Vde
0.7
1.2
BC446,A,B
BC448,A,B
BC450,A, B
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
60
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
IC
Collector Current - Continuous
Unit
BC BC BC
446 448 450
SO 100
Vdc
SO 100
Vdc
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
5.0
Vdc
300
mAdc
1 Collector
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mW/oC
TJ, T stg
- 55 to +150
'c
Operating and Storage Junction
Temperature Range
.~()
3 Emitter
THERMAL CHARACTERISTICS
Symbol
I
Max
Thermal Resistance. Junction to Case
RHJC
ReJA
I
I
83.3
Thermal Resistance, Junction to Ambient
Characteristic
200
I
Unit
I
I
°C/W
°C/W
I
HIGH VOLTAGE TRANSISTORS
I
I
PNPSILICON
Refer to MPSS598 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C
unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'
(lC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pA, IE = 0)
V(BR)CEO
BC446
BC448
BC450
60
80
100
V(BR)CBO
BC446
BC448
BC450
V(BR)EBO
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, Ie = 0)
(VCB = 80 Vdc, IE = 0)
ICBO
BC446
BC448
BC450
-
5.0
-
-
-
60
80
100
Emitter-Base Breakdown Voltage
(IE = 10 /LAdc, IC = 0)
-
-
Vdc
Vdc
Vdc
nAdc
100
100
100
ON CHARACTERISTICS'
DC Current Gain
(lC = 2.0 mA, VCE
hFE
= 5.0 V)
50
120
180
50
100
160
50
60
90
BC446/448/450
BC446A1448A1450A
BC446B/448B/450B
(lc
=
10 rnA, VCE
=
5.0 V)
BC446/448/450
BC446A1448A1450A
BC446B/448B/450B
(lc
=
100 mA, VCE
=
5.0 V)
BC446/448/450
BC446A1448A1450A
BC446B/448B/450B
-
-
-
-
-
460
220
460
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAdc, IB = 10 mAdc)
VCE!sat)
-
0.125
0.25
Vdc
Base-Emitter Saturation Voltage
VBE(sat)
-
0.S5
-
Vdc
(lC
=
100 mAdc, IB
=
10 mAdc)
Base-Emitter On Voltage
(lC = 2.0 mA, VCE = 5.0 V)
(lc = 100 mA, VCE = 5.0 V)<
Vdc
VBE(on)
0.55
-
0.76
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(lC = 50 mAdc, VCE = 5.0 Vdc, f
=
100 MHz)
"'~
dB
-
FIGURE 1 - NORMALIZED DC CURRENT GAIN
'"z
-
-
NF
BC546
BC547
BC548
0
lJ ':l
0)
10
10
,,0
10
~o
)0
1(10
'"c;<
a
>
\\
0
•
0J
)
VC~I~.)I) ~
I
G
01
?OIJ
0" 0]
Ie C.OLLECTOR CURRU','l ,mAde]
FIGURE 3 -" COLLECTOR SATURATION REGION
Ie - 50 rnA
-55 DC 10
I - 200 mA
, c,
,
a
"0 ]
a
II
10
~
I I
!t 070 10
)0
30
\010 100
FIGURE 4 - BASE EMITTER TEMPERATURE COEFFICIENT
I ~TA-2:)OC
Ie - 100 mA
w
050 7 1
'e 18:
Ie ('JllECTQR CURRENT (mAde)
0
'"«C;
-
-t
125 DC
2
c
>
...-
6
Ie lOrnA
0
I
...-
8
r--..
Ie - 20
4
0
\
00)
m'A\
4
"8
'Hill
01
10
10
20
10
02
Ie.
lB. BASE CL'RRENT (filA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-108
10
COLLECTOR CURRENT (rnA)
100
BC546,A,B, BC547,A,B,C,BC548,A,B,C
BC547/BC548
FIGURE 5 - CAPACITANCES
FIGURE 6 - CURRENT GAIN-BANDWIDTH PRODUCT
u
400
'"
~
0
-
~
'"
~ 30
~
10
u
_
~
o
,.....
i
o
~
Cob
z
r--.... ........
0
04
10
060810
.....
~ 20 0
C'b
u
z
=>
TA'15'C - I--
--;....
0
30 0
u
I
40
6.0 8010
r---...
10
~
-
TA= lSuC
100
f-
80
0
....z
40
~
30
=>
10
05
01
10
10
30
5"
10
10
10
50
30
Ie COLLECTOR CURRENT (mAde!
FIGURE B - "ON" VOLTAGE
FIGURE 7 - DC CURRENT GAIN
1.0
VCE - 5 V
veE -10 v
~
40
VR REvERSE VOLTAGE IVOLTS)
.......
,/'
TA" 25'C1I1
TA -15 'C
TI Jll
0.'
~
0
..
CI
0
0.6
CI
4
>
,;
<,
11111
~
....
:;
-
VBEt8t1'ICIiB' 10
-
~
VBE'VCE'50V
2
)
VCEt.,)l!lCII8· 10
U1
10
10
02
05
100
10
'c,
1[, COLLECTOR CURRENT ImAI
~
~
:;
16-
Ido'lll
10mA 20 mA
I
III
I
III
SO rnA
100 rnA
I TA
0
II
4
1\
--
8
~ 'VB FOR VBE
~ 08~~~rtH+---+~-+~~~--~~~~~~~
"'
100
/
200 m
....
8~
-
15'C
~ 11~+1~~H+--+\~-+~~~--~~~~~~~
o
....
100
0
1°r-rrr~rrn'--'r-~"~'---r-rT"~'---'
I ,III
50
FIGURE 10 - BASE EMITTER TEMPERATURE COEFFICIENT
FIGURE 9 - COLLECTOR SATURATION REGION
~
5a
10
10
20
COLLECTOR CURRENT ImAI
-55'C TO 115'C
2
6
i\
04~+-H+++~~---4--~~HH~4"r-~+-~~H+--~
~
>
05
10
20
50
10
10
'C, COLLECTOR CURRENT ImAI
'B, BASE CURRENT 1m A)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-109
50
100
200
•
BC546,A,B,BC547,A,B,C,BC548,A,B,C
BC546
FIGURE 12 - CURRENT GAIN-BANDWIDTH PRODUCT
FIGURE 11 - CAPACITANCE
...
40
TA" 25'C
<.>
'"~o
~ 20
•
w
<.>
'"
S
...'"o
........ r-.. C,b,
z
3:
o
TA - 25
'c
20 0
z
10
£
~
<.i 60
VCE - 5 V
500
'"'"z
10 0
"'
0
<
""""
~G
r-..
40
Cob
05
10
20
50
Tll't-10
20
0
.t
50
100
10
VR. REVERSE VOLTAGE (VOLTSI
50
10
50
100
IC. COLLECTOR CURRENT (onAI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-110
BCS49,A,B,C
BCSSO,A,B,C
MAXIMUM RATINGS
Rating
Symbol
BC
549
550
BC
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Unit
Collector-Emitter Voltage
VCEO
30
45
Vdc
Collector-Base Voltage
VCBO
30
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
100
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/oC
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
TJ, Tstg
I
12
LOW NOISE TRANSISTORS
Symbol
I
Max
Unit
RHJC
R8JA
I
83.3
°C/W
L
200
°C/W
LThermal Resistance, Junction to Ambient
3 Emitter
3
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance, Junction to Case
~~".='
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0) BC549
BC550
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 10 ~Adc, IE = 0) BC549
BC550
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 ~Adc, IC = 0)
V(BR)EBO
Vdc
30
45
Vdc
30
50
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = + 125°C)
ICBO
Emitter Cutoff Current
(VEB = 4 Vdc, IC = 0)
lEBO
Vdc
5
15
5
nAdc
~Adc
nAdc
15
ON CHARACTERISTICS
DC Current Gain
(IC = 1 a ~Adc, VCE
hFE
BC549B/550B
BC549C1550C
BC549A1550A
(IC
2 mAde, VCE
5 Vde)
BC549B/550B
BC549C!550C
BC549/550
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 0.5 mAde)
(lc = 10 mAde, IB = see note 1)
(lC = 100 mAde, IB = 5 mAde, see note 2)
=
=
5 Vdc)
100
100
110
200
420
110
=
150
270
290
500
220
450
800
800
0.075
0.3
0.25
0.25
0.6
06
Vdc
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 5 mAde)
VBE(sat)
Base-Emitter On Voltage
(IC = 1 a ~de, VCE = 5 Vdc)
(lc = 1 00 ~Adc, VCE = 5 Vdc)
(lc = 2 mAde, VCE = 5 Vdc)
VBE(on)
Vdc
1.1
Vdc
0.55
0.52
0.55
0.62
0.7
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 10 mAde, VCE = 5 Vde, I = 100 MHz)
250
Collector-Base Capacitance
(VCE = 10 Vdc, IE = 0, I = 1 MHz)
Notel: IB
IS
value lor which IC = 11 rnA at VCE
MHz
IT
pF
Ccbo
2.5
=1V
Note 2: Pulse test
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-111
= 300
~s
- Duty cycle
= 2%
•
BC549,A,B,C,BC550,A,B,C
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted)
Symbol
Characteristic
Small-Signal Cur.ent Gain
(lC = 2.0 mAde, VCE = 5.0 V, f
Noise Figure
(lc = 200 pAdc, VCE
(lc = 200 pAdc, VCE
=
Min
Typ
Max
125
240
450
-
900
500
900
hfe
1.0 kHz)
BC549/BC550
BC549B/BC550B
BC549C/BC550C
330
600
Unit
dB
= 5.0 Vdc, RS = 2.0 ill, f = 30 Hz-15 kHz)
= 5.0 Vdc, RS = 100 ill, f = 1.0 kHz)
•
-
NFl
NF2
2.5
10
0.6
-
FIGURE 1 - TRANSISTOR NOISE MODEL
--.,
,-I
I
Ideal
Transistor
FIGURE 2 -
NORMALIZED DC CURRENT GAIN
2.0
lWUl_
z
;;: 15
TA
I
<.0
~
~
::>
~
RGURE 3 1.0
0.9
~25·C
10
""0 0.7
i--::
l..--'"
VBE(.n)
(0
VCE ~ 10 V
w
.. 0.5
:;
6
::;
..:
'z"
.... ,./
JB~(~~)I(; IICIlB ~r 10
<.0
N
a:
c
J251.U :111
"iiI III
~ 0.6
O. 8
c
53
+A
r0.8
"SATURATION" AND "ON" VOLTAGES
>'
\
~ o. 3
O. 2
01
~
\
4
as
0.4
0.3
0.1
,
10
20
50
10
20
50
100
0.1
100
~
VCE( ..,) ,0 ICIIB - 10
a
0.1
0.5
10
2.0
5.0
III
10
20
IC. COLLECTOR CURRENT (mAde)
IC. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2·112
50
100
BC549,A,B,C,BC550,A,B,C
FIGURE 5 - CAPACITANCE
FIGURE 4 - CURRENT-GAIN BANDWIDTH PRODUCT
i
t
10
400
300
7.0
TA=lS oC _ ' - -
:::>
o 100
~
'"~
/
100
V
r---r-.
VCE= 10V _
TA
15 0 C=
iii 80
o
~
60
,
z
40
;;:
~~
~
w
'"z
SO
"U
0-
3.0
'""
1.0
I--.
.......
f-
-I"-- r--- .....
~
",'
30
-.... i'-..C,b
to
~
~ ..........
0
1
:::>
'"J:'
10
0.5
07
1.0
1.0
50
70
10
50
10
04
06
10
IC, COLLECTOR CURRENT (mAdel
----
AGURE 6 -
170
~
o
;
u
160
z
10
4.0
BASE SPREADING RESISTANCE
..............
"t;;
...........
~ 150
f'.
VCE=10V
f
= 1.0 KHz
TA =lS oC
to
z
;:; 0
~ 14
~
w
~ 13 0
11 0
01
10
VR, REVERSE VOLTAGE (Voltsl
0.2
0.5
1.0
2.0
S.O
10
IC, COLLECTOR CURRENT (mAdel
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-113
20
40
•
BCSS6,A,B
BCSS7,A,B,C
BCSS8,A,B,C
MAXIMUM RATINGS
Rating
Symbol
Unit
BC BC BC
556 557 558
Collector-Emitter Voltage
VCEO
65
45
30
Vdc
Collector-Base Voltage
VCBO
80
50
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
100
mAde
Total Device Dissipation @TA ; 25°C
Derate above 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @TC ; 25°C
Derate above 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
1 Collector
3 Emmer
THERMAL CHARACTERISTICS
Characteristic
I
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ReJC
83.3
°C/W
AMPLIFIER TRANSISTORS
Thermal Resistance, Junction to Ambient
R8JA
200
°C/W
PNPSIUCON
ELECTRICAL CHARACTERISTICS
(TA ; 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
65
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ; 2,0 mAde, IB ; 0)
Collector-Base Breakdown Voltage
(lC = 100 ,.Ade)
Emitter-Base Breakdown Voltage
(IE = 100,.Ade, IC = 0)
Collector-Emitter Leakage Current
(VCES = 40 V)
(VCES = 20 V)
(VCES
= 20 V, TA =
125'C)
V
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
2.0
2.0
2.0
100
100
100
-
4.0
4.0
4.0
-
V(BR)EBO
5.0
5.0
5,0
ICES
-
-
80
50
30
BC556
BC557
BC558
-
-
30
BC556
BC557
BC558
-
-
45
V
V
nA
-
BC556
BC557
BC558
-
BC556
BC557
BC558
-
~
-
,.A
ON CHARACTERISTICS
DC Current Gain
(lC = 10 ,.Ade, VCE
(lc
(lC
=
hFE
5.0 V)
= 2.0 mAde, VCE =
=
100 mAde, VCE
5.0 VI
= 5.0 V)
-
BC556
BC557
BC558
BC556A1557A/558A
BC556B/557B/558B
BC557C1558C
120
120
120
120
180
420
=
-
BC556A1557A/558A
BC556B1557B/568B
BC557C1558C
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 10 mAde, IB = See Note 1)
(lC = 100 mAde, IB = 5.0 mAde)
NOTE 1: Ie
-
BC556A/557A/558A
BC556B1557B1558B
BC557C1558C
VCE(sat)
10 mAde qn the constant base current characteristiCS, which yields the point IC
-
-
-
-
-
500
800
800
220
170
290
500
480
800
-
120
180
300
V
-
-
0.075
0.3
0.25
=
11 mAde, VeE
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-114
-
90
150
270
0.3
0.6
0.65
=
1.0 V.
BC556,A,B,BC557,A,B,C,BC558,A,B,C
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (continued)
Base-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 0.5 mAde)
(lC ~ 100 mAde, IB ~ 5.0 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC ~ 2.0 mAde, VCE ~ 5.0 Vdc)
(lc ~ 10 mAde, VCE ~ 5.0 Vdc)
VBE(on)
V
-
0.7
1.0
V
0.55
-
0.62
0.7
0.7
0.82
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC ~ 10 mA, VCE ~ 5.0 V, I ~ 50 MHz)
Output Capacitance
(VCB ~ 10 V, IC ~ 0, I
t,.
BC556
BC557
BC558
Cob
~
MHz
-
280
320
360
-
3.0
6.0
-
2.0
2.0
2.0
10
10
10
125
125
125
240
450
-
pF
1.0 MHz)
Noise Figure
(lc ~ 0.2 mAde, VCE ~ 5.0 V, RS
I ~ 1.0 kHz, .1f ~ 200 Hz)
NF
~
2 kohms,
Small-Signal Current Gain
(lC ~ 2.0 mAde, VCE ~ 5.0 V, I ~ 1.0 kHz)
BC556
BC557
BC558
dB
-
hie
BC556
BC557/558
BC556A1557Al558A
BC556B/557B/558B
BC557C/558C
220
330
600
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-115
500
900
260
500
900
•
BC556,A,B,BC557,A,B,C,BC558,A,B,C
BC557/Be558
FIGURE 1 - NORMALIZED DC CURRENT GAIN
FIGURE 2 - "SATURATION" AND "ON" VOLTAGES
1.0
2.0
z
:c
....
'"~
::
a
<.>
VCE "IOV
TA-ZSOC
1.5
0.9 -
~
0.1
«
~
\.
..
NO.5
:;
I-'
VaElonl" VCE " 10 V
0.6
0.4
>
>' 0.3
;]
Q
0.2
03
VCEI.tlll'lcJla" 10
01
o
0.2
0.2
0.5
2.0
1.0
S.O
10
50
20
200
100
01
02 03 O.S 0.1 1 0
IC. COLLECTOR CURRENT (mAIkI
Ic
~
IIIII
lOrnA
IC
1.6
~
IIII
20 rnA
TA
25°C
~
- 55°C 10 + 125°C
2
\ IC
~ 100 rnA
\
IC
~
6
11
0.1
V
200 rnA
0
1\
l-
I-
B
1\
1\1
0.02
1.0
10
20
0.2
0
FIGURE 6 - CURRENT GAIN-BANDWIDTH PRODUCT
i'
'!
C,b
....
t;
.0
::'"
t--
:0::
....
~
1"--
t'....
::i,
-
Z
150
:c
....
JTA"2!i"C
CE "IOJ
f-""
r-I-
60 8.0 10
20
30
80
60
40
VR. REVERSE VOLTAGE (VOL TSI
0
~
30
::
20
0.5
a
4.0
100
V
<;>
1.0
2.0
I---'
Z
Cob
0.4060.810
~
200
Q
0
I
Q
TA" 2SOC_
.......
400
300
:::>
1
............
100
IC. COllECTOR CURRENT (mAl
FIGURE 5 - CAPACITANCES
1. 0
10
1.0
lB. BASE CURRENT (mAl
a
50 10 100
SOmA
~
1\
0
20 30
FIGURE 4 - BASE EMITTER TEMPERATURE COEFFICIENT
1\11
IC
20 3.0 S.O 1.0 10
IC. COLLECTOR CURRENT (mAdcl
FIGURE 3 - COLLECTOR SATURATION REGION
2.0
~
I I 11 III
VaElatl"Ic/la -10
~ 0.5
"\.
Q
~
~!so~
~ 0.1
1.0
:il
Z
TIA
0.8
1.0
20
30
50
10
Ic. COllECTOR CURRENT (mAdel
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-116
20
30
50
BC556, A, B, BC557,A, B,C, BC558,A, B,C
BC556
FIGURE 7 - DC CURRENT GAIN
~~
5V
VCE
5
FIGURE 8 - "ON" VOLTAGE
25'C
TA
1.0
2.0
~
g
I
z
TJ
~
111III
r-:tlVJBJE(I~~I)@t2IC~flB;§~~lEO~~at:---::t~:tIll!ut==j
liT
.-
0.61=
~
~ 1.0
~ 25'C" tlttIII-+-t-+t-ttttt--I-t+++++t+-----::J
0.8 H-+t+1-ttt--+-+-H-1f+H+---+-++Jd.+~r-~
VBE @ VCE = 5.0 V
~
'Z
~ 0.41--t-+++++tt----1f-t-+++++tt--I1--t-+++++t+--j
~ 0.5
:>
~
u
g
i
0.2I--H+ttttl---t-t-t-l-ttttt--+--+-++++!+t-"'7""l
0.2
f0.1
1.0
0.2
2.0
5.0
10
20
50
0.7-~~~~~~~~~-7~~~~~
100 200
0.2
0.5
1.0
IC, COLLECTOR CURRENT (AMP)
FIGURE 9 - COLLECTOR SATURATION REGION
2.0
II
u;
~
w
1.6
IC~10
'"<~
rnA
20 rnA
~~
0.8
§
~
0
u
0.4
u:.
~
o
TJ
0.02
25'C
0.05
0.1
tb
\
i1VB FOR VBE
~
~
55'C TO 125'C
-2.2
~
~ -2.6
"-
t-
0.2
0.5
1.0
2.0
IB' BASE CURRENT (rnA)
~
::E
-
r-.....
"
~
-3.0
20
10
5.0
20
~
~
10
~ 8.0
C5
u
-
1--.....
TJ
~
~
25'C
I
~
u
I-
I
0.5
20
VCE
5V
500
~
~
z
200
«
50
'"
II"
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
~
100
I-
Z
~
1{.l
0.2
10
go
Cob
0.1
5.0
0
6.0
2.0
2.0
c
Cib
~
z
4.0
1.0
~
r-...
J--
0.5
50
100
FIGURE 12 - CURRENT GAIN-BANDWIDTH PRODUCT
I
t-
0.2
IC, COLLECTOR CURRENT (rnA)
FIGURE 11 - CAPACITANCE
40
-
-1.8
8
\
~
u
~
r20
50
200
/
til
Q
\
\
\
\
100
J
~ -1.4
1\
~ 1.2
50
-1.0
200 rnA
100 rnA
50 rnA
2.0
5.0
10
20
IC, COLLECTOR CURRENT (rnA)
FIGURE 10 - BASE EMITTER TEMPERATURE COEFFICIENT
I IIII
I .1111
IIII
Ll
0
~
IIII \
V
VCE(S.I) @ ICIIB - 10
20
1.0
100
10
100
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-117
200
..
BC556,A,B,BC557,A,B,C, BC558,A,B,C
FIGURE 13 - THERMAL RESPONSE
'.0
0.7
=D
0.5
:li....JC,
!!;!:
;;! ~.
....
....
-
0.3
0.2
0.5
0.2
-
-c: ::::<::
",
0
~
Or;- 0.05
~~. 0.1
fJ~~H~~
~ ~ 0.07
~ ~ 0.05
HUL
-
.--
SINGLE PULSE
-p;-~
..; us·
-.=
•
t:! 0.03
0.02
0.0'
0.'
- -
Duty Cycle, D = l,h2
0.2
0.5
1.0
2.0
5.0
'0
20
50
'00
200
--Z8JCIII - rltlR8JC
R8JC = 83.3'CNI Max
- - - Z8JAIII = rill R8JA
R8JA = 200'CNI Max
DCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT I,
TJlpkl - TC = Plpkl R8JCIII
1.0 k
500
2.0 k
5.0 k
'0 k
I, TIMElmsl
FIGURE 14 -
ACTIVE REGION SAFE OPERATING AREA
,
200
I'
100
TA=250C
~
E
, 15",
"
,
"
r.
TJ :250C
,
50
I-
2
w
a:
a:
"', ' .
::J
U
\
"
, , '"
,,
3ms
~\
N
,
....
a:
0
, ....
IU
W
...J
...J
....
10
0
U
S>
---
-
2
- -
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAK DOWN LIMIT
10
BC 558
BC557
BC 556
-30
45
65
100
VCE, COLLECTOR EMITTER VOLTAGE IVI
The safe operating area curves indicate IC-VCE limits of the transistor that must be observed
operation. Collector load lines for specific ci[cuits must fall below the limits indicated by the applicable curve.
for
reliable
The data of Figure 14 is based upon TJ(pk)=150 o C; TC or TA IS variable depending upon conditions_ Pulse curves are
valid for duty cycles to 10% provided TJ(pk)';;150 o C. TJ(pk) may be calculated from the data of Figure 13. At high
case or ambient temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. (see AN 415).
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-118
BC559,B,C
BC560,B,C
MAXIMUM RATINGS
Symbol
Rating
BC
BC
559
560
45
Vdc
50
Vdc
Unit
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Collector-Emitter Voltage
VCEO
30
Collector-Base Voltage
VCBO
30
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
100
mAdc
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mW/oC
= 25°C
Po
1.5
12
mWrC
-55to+150
°c
Total Device Dissipation @TC
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ,Tstg
1 Collector
~~
Watt
•
3 Emitter
THERMAL CHARACTERISTICS
Characteristic
LOW NOISE TRANSISTORS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0) BC559
BC560
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 10 ~Ade, IE = 0) BC559
BC560
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 ~Ade, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
Vde
30
45
Vde
30
50
Vde
5
ICBO
=+
15
5
125°C)
Emitter Cutoff Current
(VEB = 4 Vde, IC = 0)
nAde
~Ade
nAde
lEBO
15
ON CHARACTERISTICS
DC Current Gain
(IC = 1 0 ~Ade, VCE
(IC
=2
mAde, VCE
=5
=5
hFE
Vde)
BC559B/560B
BC559C/560C
BC559B/560B
BC559C/560C
BC559/560
Vde)
100
100
lBO
3BO
120
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 0.5 mAde)
(IC = 10 mAde, IB = see note 1)
(lC = 100 mAde, IB = 5 mAde, see note 2)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 100 mAde, IB = 5 mAde)
VBE(sat)
Base-Emitter On Voltage
(IC = 1 a ~Ade, VCE = 5 Vde)
(IC = 1 00 ~Ade, VCE = 5 Vde)
(lc = 2 mAde, VCE = 5 Vde)
VBE(on)
150
270
290
500
460
800
800
Vde
0.075
0.3
0.25
0.25
0.6
Vde
1.1
Vde
0.55
0.52
0.55
0.62
0.7
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(lc = 10 mAde, VCE = 5 Vde, f = 100 MHz)
IT
Collector-Base Capacitance
(VCE = 10 Vde, IE = 0, f = 1 MHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 5.0 V, f
=
IS
value for which IC
=
pF
Cebo
2.5
-
hfe
1.0 kHz)
BC559B/BC560B
BC559C/BC560C
Noise Figure
(lC = 200 IkAdc, VCE = 5.0 Vdc, RS = 2.0 kil, f = 30 Hz-15 kHz)
(lc = 200~, VCE = 5.0 V, RS = 100 kil, f = 1.0 kHz,.1.f = 200 Hz)
Notel: IB
MHz
250
11 mA at VCE
=
NFl
NF2
240
450
330
600
500
900
-
0.5
2.0
10
dB
-
-
Note 2: Pulse test = 300
1V
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-119
~s
- Duty cycle
=
2 '10
BC559,B,C,BC560,B,C
FIGURE 1 -
NORMAUZED DC CURRENT GAIN
AGURE 2 -
0
0
lJEI"IWV _
TA "25°C
5
TA~12510~
9r-a
IIIII
IIIIIII
8
2:. 06
6
'"~
05
s:
04
\
02
VCE{sat)
1
o2
02
05
10
2a
5a
o
10
20
100
50
01
200
as
02
IC, COL L,CTOR CURRENT ImAdel
FIGURE 3 -
~.
'"t;
;;:
"'~
I
Z
2a
5a
10
20
50
100
IC, COLLECTOR CURRENT ImAdel
CURRENT-GAIN BANDWIDTH PRODUCT
FIGURE 4 -
CAPACITANCE
4U 0
30 0
V
100
..--
1"--......
~ 50
CE -10 v _
25 0 C= i-e-
z
S
;t
a
a
.t:'
a5
0
:3
10
2a
70
10
20
50
04
10
06
IC, COLLECTOR CURRENT ImAdel
0
--
20
40
BASE SPREADING RESISTANCE
r----..........
a
"'-
VCE = 10 V
= 1 a KHz
I
TA = 25 oc
0
""
1'\
a
12 a
01
-
10
VR, REVERSE VOLTAGE IVoltsl
AGURE 5 -
17 0
~ r---
f"".,
a
50
r-
r--- I"--r-.
a
u'
07
A=250C_
r--...C,b
w
u
f=;:::
fA
80
0
6
~
---
70
20 a
' 03
\
3
CI
V
VBE(onj
w
4
~
~
,.-
/
VB~I;a:11 ,IIICilB _110
"'0 a 71-- I~
0
•
"SATURATION" AND "ON" VOLTAGES
02
05
10
20
5a
10
IC, COLLECTOR CURRENT ImAdel
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-120
20
40
BC6t7
BC6tS
MAXIMUM RATINGS
Rating
Symbol
BC
617
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEB'O
IC
BC
618
Unit
40
55
Vdc
50
BO
Vdc
12
La
Adc
= 25°C
Po
625
5,0
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1,5
12
Watt
mW/oC
TJ, Tstg
- 55 to +150
°C
Operating and Storage Junction
Temperature Range
Collector 1
"~
Vdc
Total Device Dissipation @ TA
Derate above 25°C
Collector Current - Continuous
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Emitter 3
THERMAL CHARACTERISTICS
I
I
Characteristic
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to Ambient
I
ELECTRICAL CHARACTERISTICS (TA
Symbol
RAJC
RBJA
I
=
I
Max
I
Unit
I
I
B3.3
J
200
1
I
°C/W
I
°C/W
DARLINGTON TRANSISTORS
NPN SILICON
I
Refer to 2N6426 for graphs.
25°C unless otherwise noted,)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, VBE = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
Vdc
V(BR)CEO
BC617
BC61B
40
55
-
-
50
BO
-
Vdc
V(BR)CBO
12
-
-
-
-
50
50
-
-
50
50
lEBO
-
-
50
nAdc
VCE(sat)
-
-
1.1
Vdc
VBE(sat)
-
-
1.S
Vdc
-
-
BC617
BC61B
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
Both Types
Collector Cutoff Current
(VCE = 40 Vdc, VBE = 0)
(VCE = SO Vdc, VBE = 0)
BC617
BCS18
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = SO Vdc, IE = 0)
BCS17
BC618
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 0)
Both Types
V(BR)EBO
ICES
ICBO
Vdc
nAdc
nAdc
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(lC = 200 rnA, IB = 0,2 rnA)
Both Types
Base-Emitter Saturation Voltage
(lC = 200 rnA, IB = 0,2 rnA)
Both Types
Current Gain
(lC = 100 p,A, VCE = 5,0 V)
(lc = 10 rnA, VCE
(lC = 200 rnA, VCE
(lC
=
1.0 A, VCE
= 5,0 V)
= 5.0 V)
= 5.0 V)
hFE
BC617
BCS18
BCS17
BC618
BCS17
BC61B
BCS17
BC618
4000
2000
10000
4000
20000
10000
10000
4000
-
-
150
-
-
-
-
70000
50000
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 500 rnA. VCE = 5.0 V, P = 100 MHz)
fy
MHz
Both Types
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
-
4,5
7,0
pF
Input Capacitance
(VEB = 5.0 V, IE = 0, f
Cib
-
5,0
g,O
pF
=
1,0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-121
•
Unit
BC63S
BC637
BC639
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
VCEO
45
Collector-Base Voltage
VCBO
45
Emitter-Base Voltage
VEBO
Collector Current - Continuous
•
BC BC BC
635 637 639
Total DevIce Dissipation
Derate above 25°C
@TA
Total Device Dissipation @ TC
Derate above 25°C
IC
60
80
Vdc
60
80
Vdc
5.0
0.5
Adc
Vdc
2 Collector
~ 25°C
Po
BOO
6.4
mW
mW/oC
25°C
Po
2.75
22
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
~
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
.:()
, Emitter
HIGH CURRENT TRANSISTORS
Characteristic
Thermal ResIstance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
~ 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
45
60
80
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
(lC = 10 mAde, IB = 0)
V(BR)CEO
BC635
BC637
BC639
COllector-Base Breakdown Voltage
(lC ~ 100 /'Adc, IE = 0)
V(BR)CBO
BC635
BC637
BC639
Emitter-Base Breakdown Voltage
(IE = 10 /'Adc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0,
(VCB ~ 30 Vdc, IE = 0, TA
V(BR)EBO
ICBO
=
125"C)
-
Vdc
-
Vdc
45
60
80
-
-
-
5.0
-
-
Vdc
-
-
100
10
nAdc
/'Adc
25
40
40
40
25
-
-
-
-
250
160
160
ON CHARACTERISTICS'
DC Current Gain
(lC = 5.0 mAde, VCE = 2.0 Vdc)
(lC = 150 mAde, VCE ~ 2.0 Vdc)
(lc
= 500
mA, VCE
~
-
hFE
BC635
BC637
BC639
2.0 V)
-
Collector-i;mitter Saturation Voltage
(lC ~ 500 mAde, IB = 50 mAde)
VCE(sat)
-
-
0.5
Vdc
Base-Emitter On Voltage
(lC ~ 500 mAde, VCE = 2.0 Vdc)
VBE(on)
-
-
1.0
Vde
t,-
-
200
Cob
-
7.0
Cib
-
50
DYNAMIC CHARACTERISTICS
Current·Gain Bandwidth Product
(lc = 50 mAde, VCE = 2.0 Vdc, f
Output Capacitance
(VCB = 10 Vdc, IE
=
0, f
Input Capacitance
(VBE = 0.5 Vdc, IC
=
0, f
=
~
=
100 MHz)
1.0 MHz)
1.0 MHz)
*Pulse Test: Pulse Width", 300 Pos, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-122
-
MHz
pF
pF
BC635,BC637,BC639
FIG. 1 -
ACTIVE REGION SAFE OPERATING AREA
FIG. 2 500
1000
500
..
i
II
VCE
SOA.1S
~ P TC 25°C
I""'--.
_ 200
..5.
DC CURRENT GAIN
........P~A 25°
100
=2 V
.........
200
-
~
FPDTA 25°C
~ 20
10
<>
u
_u
..,... . . .V
50
r- 'PD'TC
.......
........
250C
u
50
<>
5
....
,.-
3
4
5
10
20
30 40 50
70
100
10
VCE COLLECTOR EMITTER VOLTAGE (VOLTS)
30
IC COllECTOR
FIG. 3 -
'"
"
BC635
BC637
BC639
2
I
r-.
,.-
r---..
r---....
50
100
300 500 1000
(mAl
CURRENT
CURRENT GAIN BANDWIDTH PRODUCT
FIG. 4 -
"SATURATION" AND "ON" VOLTAGES
500
111111
i'
~ 300
=>
<>
"
'"
"
,/
0~
~
100
_
I\VCE=2V
V
VBEon at VCE = 2 V
08
~
~
~
~ 0.4
z
~
...-:
111111
VBE.a1 at IC/IB = 10
0.8
~
u
~
50
'> 0.2
VCEsat at IC/IB =10
-=
0,
20,
10
100
IC . COllECTOR CURRENT (mAl
IC COllECTOR CURR[NT (rnA I
FIG. 5 -
TEMPERATURE COEFFICIENTS
02
1.0
I
VCE' 2 VOLTS
dT, OOCTO.lO ·C
1.6
/
./
--
0. FOR VBE
to""
3510
-
100
10
1000
3050
100
300 500
1000
Ie COllECTOR CURRENT (rnA I
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-123
1000
•
BC636
BC63S
BC640
MAXIMUM RATINGS
Rating
Symbol
Unit
Collector-Emitter Voltage
VCEO
45
Collector-Base Voltage
VCBO
45
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.5
Adc
Collector Current - Continuous
•
BC BC BC
636 638 640
60
80
Vdc
60
80
Vdc
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
2 Collector
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
800
6.4
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
2.75
22
Watt
mW/oC
TJ. Tstg
-55 to +150
°c
Oper,ating and Storage Junction
Temperature Range
~-t9
1 Emitter
THERMAL CHARACTERISTICS
I
I
Characteristic
Thermal Resistance. Junction to Case
Thermal Resistance. Junction to Ambient
I
ELECTRICAL CHARACTERISTICS (TA
I
Symbol
RHJC
R(lJA
I
I
I
Max
45
156
I
I
Unit
°C/W
I
°C/W
I
I
HIGH CURRENT TRANSISTORS
PNPSILICON
I
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
45
60
80
-
-
45
60
80
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'
(lc = 10 mAdc. IB = 0)
V(BR)CEO
BC636
BC638
BC640
Collector-Base Breakdown Voltage
(lC = 100 pAdc. IE = 0)
V(BR)CBO
BC636
BC638
BC640
Emitter-Base Breakdown Voltage
(IE = 10 pAdc. IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc. IE = O.
(VCB = 30 Vdc, IE = 0, TA
V(BR)EBO
ICBO
=
125°C)
Vdc
-
5.0
-
-
-
100
10
-
-
-
Vdc
Vdc
nAdc
pAdc
ON CHARACTERISTICS'
DC Current Gain
(lC = 5.0 mAde, VCE = 2.0 Vdc)
(lC = 150 mAde, VCE = 2.0 Vdc)
(lC
=
500 mA, VCE
hFE
25
40
40
40
25
BC636
BC638
BC640
= 2.0 V)
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 500 mAde, VCE = 2.0 Vdc)
-
-
250
160
160
Vdc
0.25
0.5
VBE(on)
-
-
1.0
Vdc
t,.
-
150
-
MHz
Cob
-
9.0
Cib
-
110
0.5
-
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 50 mAdc, VCE = 2.0 Vdc, f
=
100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
1.0 MHz)
'Pulse Test: Pulse Width", 300 J1-$, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
,2-124
-
pF
pF
BC636,BC638,BC640
FIG. 1 -
ACTIVE REGION SAFE OPERATING AREA
FIG. 2 &00
1000
&00
50A
T""'-.
4" 200
.5.
....
!
'00
C-250C
..............
TA--2SoC
f"-....
B
25°C
20
~
10
--
........
f-:r.
3
4
&
10
20
VeE -2 VOLTS
II
30 40 50
70
II
100
10
VCE COLLECTOR EMITTER VOLTAGE (VOLTS)
IC. COLLECTOR
FIG. 4 -
'"
~ 300
....w
V
~
'"....
~
30
50
100
CURRENT
300 500
1000
ImA)
CURRENT GAIN BANDWIDTH PRODUCT
"SATURATION" AND "ON" VOLTAGES
&00
=>
c
1\
50
c
BC636
BC638
BC640
FIG. 3 -
"'-
w
w
1
r'\
....... 1--' V
.........
......
~
200
&0
~
I
VCE = 2 V
15
i'-
r-.....
DC CURRENT GAIN
-
I IIII
I IIII
0.8
veE sa, at Ic/le = 10
_
1\
100
VeE on "VCE:2V
06
VCE = 2 V
~
z
~
co
&0
....
>" 02
j
VCE", at Ic/le =10
0,
.:: 20,
10
1000
100
IC . COLLECTOR CURRENT (mAl
IC COLLECTOR CURRENT [rnA I
FIG. 5 -
.
TEMPERATURE COEFFICIENTS
-0 2
'-'
~
..5,
....'"
~
~ -1.0
8
VCE ,2 VOLTS
..IT, 00CTO-10 ·C
.,/
-2.2
1
--
:..--100
10
~
I
/
8y FOR VBE
~
5
10
30
50
100
300 500
1000
Ie COlLECTOR CliRRENT (mA I
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-125
1000
..
BC650,C,CS,S
BC651,C,CS,S
MAXIMUM RATINGS
BC650
BC651
Symbol
Series
Series
Unit
VCEO
30
45
Vde
Collector-Base Voltage
VCBO
30
Emitter-Base Voltage
VEBO
Rating
Collector-Emitter Voltage
Collector Current -
•
Continuous
45
Vde
6.0
Vde
IC
200
mAde
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
PD
625
5.0
mW
mW/,C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
1.5
12
Watt
mW/,C
TJ, Tstg
-55 to +150
'c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
23
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
'CIW
Thermal Resistance, Junction to Ambient
R8JA
200
'CIW
1 Emitter
LOW NOISE AUDIO
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
~~~
"
NPN SILICON
Refer to MPSA 18 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
-
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
BC650
BC651
V(BR)CEO
30
45
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
BC650
BC651
V(BR)CBO
30
45
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
0.015
pA.
Collector-Emitter Leakage Current
(VCE = 60 V)
ICES
-
0.025
pA.
Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)
lEBO
-
0.015
pA.
380
380
1400
820
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mAde, VCE = 5.0 Vde)
-
hFE
BC650, S/BC651 , S
BC650, C, CS/BC651, C, CS
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 100 mAde, IB = 5.0 mAde)
VCE(sat)
Base Emitter On Voltage
(lC = 2.0 mAde, VCE = 5.0 Vde)
VBE(on)
0.55
0.7
Vde
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
hfe
380
1600
-
Output Capacitance (VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Cob
-
3.0
pF
Input Capacitance (VEB = 0.5 Vde, IC = 0, f = 1.0 MHz)
Cib
-
8.0
pF
Current-Gain Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 V, f = 100 MHz)
tr
100
700
MHz
Noise Figure
(VCE = 5.0 V, IC = 0.2 rnA, RS = 2.01<0, f = 1.0 kHz, TA = 25'C)
BC650, C, BC651, C
BC650S,CS, BC651S,CS
NF
-
2.8
2.0
-
Vde
0.2
0.6
SMALL-SIGNAL CHARACTERISTICS
dB
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-126 .
MAXIMUM RATINGS
Rating
Coliector·Emitter Voltage
Symbol
BCB07
BCB08
Unit
VCEO
45
25
V
Coliector·Base Voltage
VCBO
50
30
V
Emitter·Base Voltage
VEBO
5.0
5.0
V
IC
500
500
mAdc
Collector Current -
Continuous
BC807-16L, -25L, -40L
BC808-16L, -25L, -40L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
·CIW
Po
300
mW
2.4
mWrC
R6JA
417
.C/W
TJ, Tst~
-55 to +150
·C
Total Device Dissipation FR·5 Board,"
TA ~ 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25·C
~
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
GENERAL PURPOSE
TRANSISTORS
'FR·5 ~ 1.0 x 0.75 x 0.062 m.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSIUCON
DEVICE MARKING
Bca07·16L
BCaOB·25L
~
~
•
2 Emitter
25·C
5A; BC807·25L
5F; BCBOB-40L
~
~
5B; BC807·40L
5G
ELECTRICAL CHARACTERISTICS (TA
~
5C; BC80B·16L
~
5E;
~ 25·C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
-
-
-
-
-
Unit
OFF CHARACTERISTICS
Coliector·Emitter Breakdown Voltage
V(BR)CEO
BCa07 Series
BCaOB Series
Coliector·Emitter Breakdown Voltage
(VEB ~ 0)
45
25
50
30
Emitter·Base Breakdown Voltage
V(BR)EBO
5.0
5.0
BCB07 Series
BCaOB Series
Collector Cutoff Current
(VCB ~ 20 V)
(VCB ~ 20 V, TJ ~ 150·C)
ICBO
-
V
V(BR)CES
BCa07 Series
BCaOB Series
-
V
-
-
-
V
-
100
5.0
nA
pA
ON CHARACTERISTICS
DC Current Gain
(lC ~ 100 mA, VCE ~ 1.0 V)
hFE
BCB07·16L
BCB08·16L
BCB07·25L
BcaOB·25L
Bca07·40L
BCBoa·40L
Coliector·Emitter Saturation Voltage
(lC ~ 500 mA, IB ~ 50 mAl
VCE(sat)
-
-
Base·Emitter On Voltage
(lc ~ 500 mA. IB ~ 1.0 V)
VBE(on)
-
100
160
250
40
(lc ~ 500 mA, VCE ~ 1.0 V)
250
400
600
0.7
V
-
1.2
V
200
-
-
MHz
-
10
-
pF
SMALL·SIGNAL CHARACTERISTICS
IT
Current·Gain Bandwidth Product
(lC ~ 10 mA, VCE ~ 5.0 Vdc, f ~ 35 MHz)
Output Capacitance
(VCB ~ 10 V, f ~ 1.0 MHz)
Cobo
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-127
~-
--~~------
MAXIMUM RATINGS
Symbol
BC817
BC818
Unit
Collector-Emitter Voltage
Rating
VCEO
45
25
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
5.0
5.0
V
IC
500
500
mAde
Collector Current -
Continuous
BCS17-16L, -25L, -40L
BCS1S-16L, -25L, -40L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
·CIW
Po
300
mW
2.4
mWrC
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25·C
Derate above 25·C
,~' ~()
2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
·CIW
417
R8JA
-55 to
TJ, Tsto
+ 150
GENERAL PURPOSE
TRANSISTORS
·C
'FR-5 = 1.0 x 0.75 x 0.062 m.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
BC817-16L = 6A; BC817-25L = 6B; BC817-40L
BC818-25L = 6F; BC818-40L = 6G
= 6C;
BC818-16L
= 6E;
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
45
25
-
-
50
30
-
-
-
-
-
-
100
5.0
100
-
250
160
-
400
-
600
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
BC817 Series
BC818 Series
Collector-Emitter Breakdown Voltage
(VEB = 0)
Emitter-Base Breakdown Voltage
V(BR)EBO
BC817 Series
BC818 Series
5.0
5.0
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150·C)
ICBO
V
V(BR)CES
BC817 Series
BC818 Series
V
V
nA
p,A
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mA, VCE
=
hFE
BC817-16L
BC818-16L
BC817-25L
BC818-25L
BC817-40L
BC818-40L
1.0 V)
250
40
Collector-Emitter Saturation Voltage
(lC = 500 mA, IB = 50 mAl
VCE(sat)
-
Base-Emitter On Voltage
(lC = 500 mA, VCE = 1.0 V)
VBE(on)
-
-
fT
200
-
-
10
(lc
= 500 mA, VCE = 1.0 V)
0.7
V
1.2
V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 mA, VCE = 5.0 Vdc, f
= 35 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-128
-
MHz
pF
MAXIMUM RATINGS
Symbol
BC846
BC847
BC846
Collector-Emitter Voltage
Rating
VCEO
65
45
30
V
Collector-Base Voltage
VCBO
SO
50
30
V
Emitter-Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAde
Collector Current -
Continuous
Unit
BC846AL, BL
BC847AL, BL, CL
BC848AL, BL, CL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
1.S
mW/oC
ROJA
556
°CIW
PD
300
mW
2.4
mWrC
ROJA
417
°CIW
TJ, TstQ
-55 to +150
°c
Total Device Dissipation FR-5 Board,*
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
~
Derate above 25°C
Junction and Storage Temperature
~
3 Collector
,~' ."~
25°C
Thermal Resistance Junction to Ambient
*FR-5
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
1.0 x 0.75 x 0.062 In.
'*Alumlna
~
0.4
x 0.3 x 0.024
In.
GENERAL PURPOSE
TRANSISTORS
99.5% alumina.
DEVICE MARKING
BC846AL
BC848AL
~
~
1A; BCS46BL
1J; BC848BL
~
~
1B; BC847AL
1K; BC848CL
~
~
1E; BCS47BL
1L
~
1F; BCS47CL
~
•
2 Emitter
1G;
NPN SILICON
Refer to BC546 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc ~ 10 rnA)
BC846AL,BL
BC847 AL,BL,CL
BC848AL,BL,CL
V(BR)CEO
65
45
30
Collector-Emitter Breakdown Voltage
(lC ~ 10 IlA VEB ~ 0)
BCS46AL,BL
BCS47 AL,BL,CL
BC848AL,BL,CL
V(BR)CES
SO
50
30
Collector-Base Breakdown Voltage
(lC ~ 1OIlA)
BCS46AL,BL
BCS47 AL,BL,CL
BCS48AL,BL,CL
V(BR)CBO
SO
50
30
Emitter-Base Breakdown Voltage
(IE ~ 1.0/LA)
BC846AL,BL
BCS47AL,BL,CL
BCS48AL,BL,CL
V(BR)EBO
6.0
6.0
5.0
Collector Cutoff Current (VCB ~ 30 V)
(VCB ~ 30 V, TA ~ 150°C)
-
-
-
-
-
-
-
V
V
V
V
ICBO
-
-
15
5.0
nA
/LA
hFE
-
90
150
270
-
-
-
1S0
290
520
220
450
SOO
0.25
0.6
ON CHARACTERISTICS
DC Current Gain
(lc ~ 10 !LA, VCE ~ 5.0 V)
BCS46AL, BCS47AL, BCS4SAL
BCS46BL, BC847BL, BCS4SBL
BCS47CL, BCS48CL
(lc ~ 2.0 rnA, VCE ~ 5.0 V)
110
200
420
BCS46AL,BC847AL,BC84SAL
BCS46BL, BCS47BL, BCS4SBL
BC847CL, BCS4SCL
VCE(sat)
-
-
Base-Emitter Saturation Voltage (lc ~ 10 mA, IB ~ 0.5 rnA)
(lc ~ 100 rnA, IB ~ 5.0 rnA)
VBE(sat)
-
0.7
0.9
Base-Emitter Voltage (lC ~ 2.0 mA, VCE ~ 5.0 V)
(lC ~ 10 mA, VCE ~ 5.0 V)
VBE(on)
580
660
-
700
770
mV
-
IT
100
-
-
MHz
Collector-Emitter Saturation Voltage (lc
(lC
~
~
10 rnA, IB ~ 0.5 mAl
100 rnA, IB ~ 5.0 rnA)
-
V
V
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc ~ 10 mA, VCE ~ 5.0 Vdc, f ~ 100 MHz)
Output Capacitance (VCB ~ 10 V, f ~ 1.0 MHz)
Noise Figure (lC ~ 0.2 mA, VCE ~ 5.0 Vdc, RS ~ 2.0 kil,
f ~ 1.0 kHz, BW ~ 200 Hz)
Cobo
-
-
4.5
pF
NF
-
-
10
dB
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-129
MAXIMUM RATINGS
'Rating
Symbol
BC850
BC849
Unit
Collector-Emitter Voltage
VCEO
45
30
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
IC
100
100
mAde
Collector Current -
Continuous
BC849BL,CL
BC850BL,CL
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
"CIW
Po
300
mW
2.4
mWrC
R8JA
417
"CIW
TJ,T~
-55 to +150
"C
Total Device Dissipation FR-5 Board,"
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate," TA
Derate above 25"C
= 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~' .:~
2 Emitter
LOW NOISE
TRANSISTORS
*FR-5 = 1.0 x 0.75 x 0.062 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
BC849BL
I
= 2B;
BC849CL
= 2C;
BC850BL
ELECTRICAL CHARACTERISTICS
=
2F; BC850CL
= 2G
Refer to BC549 for graphs.
(TA = 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
, OFF CHARACTERISTICS
, Collector-Emitter Breakdown Voltage
V(BR)CEO
45
30
BC850BL,CL
BC849BL,CL
Collector-Emitter Breakdown Voltage
(VEB = 0)
V(BR)CES
BC850BL,CL
BC849BL,CL
50
30
-
V
V
-
5.0
-
-
V
-
-
15
5.0
nA
pA
BC849BL, BC850BL
BC849CL, BC850CL
-
150
270
-
BC849BL, BC850BL
BC849CL, BC850CL
200
420
290
520
450
800
-
-
0.25
0.6
0.7
0.9
-
-
0.7
0.77
'Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, TA = 150"C)
ICBO
ON CHARACTERISTICS
DC Current Gain
: (lC = 10 pA, VCE
:
(IC
=
hFE
5.0 V)
= 2.0 mA, VCE =
5.0 V)
Collector-Emitter Saturation Voltage
! (lC = 10 mA, IB = 0.5 mAl
: (lC = 100 mA. 18 = 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
: (lc = 10 mA, IB = 0.5 mAl
, (lC = 100 mA, IB = 5.0 mAl
VBE(sat)
Base-Emitter On Voltage
(lc = 2.0 mA, VCE = 5.0 V)
(lc = 10 mA, VCE = 5.0 V)
VBE(on)
-
0.58
-
-
V
V
V
SMALL-SIGNAL CHARACTERISTICS
current-Gain Bandwidth Product
(lC = 10 mA, VCE = 5.0 Vdc, f
fr
= 35 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
(lC = 0.2 mAde, VCE = 5.0 Vdc, RS
f = 1.0 kHz, BW = 200 Hz)
Cobo
NF
= 2.0 kO,
100
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-130
-
MHz
4.5
pF
4
dB
MAXIMUM RATINGS
Symbol
BC856
BC857
BC658
Unit
Collector-Emitter Voltage
Rating
VCEO
65
45
30
V
Collector-Base Voltage
VCBO
SO
50
30
V
Emitter-Base Voltage
VEBO
5.0
5.0
5.0
V
IC
100
100
100
mAde
Collector Current -
Continuous
BC856AL, BL
BC857AL, BL,CL
BC858AL,BL,CL
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.S
mWf'C
RBJA
556
'CIW
Po
300
mW
2.4
mWf'C
417
'CIW
Total Device Dissipation FR-5 Board,"
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25'C
~
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
3 Collector
,~' ~()
25'C
Thermal Resistance Junction to Ambient
R9JA
-55 to +150
'c
TJ, Tsta
""Alumona ~ 0.4 x 0.3 x 0.024 on. 99.5% alumona.
"FR-5 - 1.0 x 0.75 x 0.062 on.
•
2 Emitter
Junction and Storage Temperature
GENERAL PURPOSE
TRANSISTORS
DEVICE MARKING
PNPSIUCON
BCS56AL = 3A; BCS56BL = 3B; BCS57AL = 3E; BCS57BL = 3F; BC857CL = 3G;
BC858AL = 3J; BC858BL = 3K; BC858CL = 3L
ELECTRICAL CHARACTERISTICS (TA
Refer to BC556 for graphs.
~ 25'C unless otherwise noted.)
I
Symbol
Min
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO
65
45
30
Collector-Emitter Breakdown Voltage
(lc ~ 10 pA, VEB = 0)
BCS56 Series
BC857 Series
BC858 Series
V(BR)CES
80
50
30
Collector-Base Breakdown Voltage
(lc ~ 10pA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO
80
Emitter-Base Breakdown Voltage
(IE = 1.0 pAl
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO
Characteristic
Typ
Max
Unit
-
V
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10mA)
ICBO
-
-
hFE
-
90
150
270
125
220
420
180
290
520
250
475
800
-
-
0.3
0.65
50
30
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150'C)
5.0
5.0
5.0
-
V
-
V
-
V
-
15
4.0
nA
,.,.A
-
-
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 pA, VCE = 5.0 V)
BC856AL, BC857AL, BC858AL
BC856BL, BC857BL, BC858BL
BC857CL, BC858CL
(lc = 2.0 mA. VCE = 5.0 V)
Collector-Emitter Saturation Voltage (lc
(lC
BC856AL, BC857AL, BC858AL
BC856BL, BC857BL,BC858BL
BC857CL, BC858CL
~
~
10 mA, IB = 0.5 mAl
100 mA, IB ~ 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage (lC ~ 10 mA, IB = 0.5 mAl
(lC = 100 mA, IB = 5.0 mAl
VBE(sat)
Base-Emitter On Voltage (lC = 2.0 mA, VCE = 5.0 V)
(lC = 10 mA, VCE ~ 5.0 V)
-
-
V
V
-
0.7
0.9
VBE(on)
0.6
-
-
-
fr
100
-
-
-
-
4.5
pF
10
dB
-
0.75
0.82
V
SMALL-SIGNAL CHARACTERISTICS
Current·Gain Bandwidth Product
(lc = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (lc = 0.2 mA, VCE ~ 5.0 Vdc, RS
f = 1.0 kHz, BW = 200 Hz)
Cobo
~
2.0 kn,
NF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-131
MHz
MAXIMUM RATINGS
Rating
Symbol
BC860
BC859
Unit
Collector-Emitter Voltage
VCEO
45
30
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
IC
100
100
mAde
Collector Current -
Continuous
BC859AL, BL,CL
BC860AL, BL,CL
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mWfC
R9JA
417
°CIW
PD
300
mW
2.4
mWfC
R9JA
556
°CIW
TJ, TS!!!
-55to +150
°C
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate," TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~' ";~
2 Emitter
LOW NOISE
TRANSISTORS
*FR-5 ~ 1.0 x 0.75 x 0.062 in.
""Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
BC859AL
BC860BL
I
~
~
4A; BC859BL
4F; BC860CL
PNP SILICON
~
~
4B; BC859CL
4G
ELECTRICAL CHARACTERISTICS (TA
~
4C; BC860AL
~
4E;
Refer to BC559 for graphs.
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
45
30
--
-
50
30
-
5.0
-
-
V
-
-
15
5.0
nA
pA
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
BC860 Series
BC859 Series
Collector-Emitter Breakdown Voltage
(VEB ~ 0)
V
V(BR)CES
BC860 Series
BC859 Series
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cutoff Current
(VCB ~ 30 V, IE ~ 0)
(VCB ~ 30 V, TA ~ 150°C)
V
ICBO
-
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 p,A, VCE ~ 5.0 V)
(lc ~ 2.0 mA, VCE ~ 5.0 V)
hFE
-
BC859AL, BC860AL
BC859BL, BC860BL
BC859CL, BC860CL
-
90
150
270
BC859AL, BC860AL
BC859BL, BC860BL
BC859CL, BC860CL
110
200
420
180
290
520
220
450
800
-
-
-
0.25
0.6
-
0.7
0.9
Collector-Emitter Saturation Voltage
(lC ~ 10 mA, IB ~ 0.5 mAl
(lc ~ 100 mA, IB ~ 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC ~ 10 mA, IB ~ 0.5 mAl
(lC ~ 100 mA, IB ~ 5.0 mAl
VBE(sat)
Base-Emitter On Voltage
(lC ~ 2.0 mA, VCE ~ 5.0 V)
(lc ~ 10 mA. VCE ~ 5.0 V)
VBE(on)
V
V
V
-
-
-
0.7
0.77
100
-
-
MHz
Cobo
-
-
4.5
pF
NF
-
-
4.0
dB
0.58
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC ~ 10 mA, VCE ~ 5.0 Vdc, f ~ 35 MHz)
fr
Output Capacitance
(VCB ~ 10 V, f ~ 1.0 MHz)
Noise Figure
(lC ~ 0.2 mAde, VCE ~ 5.0 Vdc, RS ~ 2.0 kn,
f ~ 1.0 kHz, BW ~ 200 Hz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-132
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
32
Vdc
Collector-Base Voltage
VCBO
32
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAde
BCW29L
BCW30L
Symbol
Max
Unit
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
Po
225
mW
1.8
mWFC
ROJA
556
·CIW
Po
300
mW
2.4
mWFC
ROJA
417
·CIW
TJ, Tsto
-55to +150
·C
Collector Current -
Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~' ,:~
•
2 Emitter
GENERAL PURPOSE
TRANSISTORS
*FR-5 = 1.0 x 0.75 x 0.062 m.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
BCW29L = C1; BCW30L = C2
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, IE = 0)
V(BR)CEO
32
Collector-Emitter Breakdown Voltage
(lC = 100 !-~ 02
--
w
IC -100mA
'"=>
.'\.
~ -2 4
,.~
I'-\.'C - 50 mA
IC' 20 mA
\
~
1'+-.1.1
-
I--'""
-2 8
.;
~
IC - 10 mA
001
5010 100
I--'"
~
\
1
20)0
-55 oC to + 125 DC
8-2. 0
08
06
I
2
~
G--1 6
>
'"
5010 10
....
18
e
w
]0)0
FIGURE 4 - BASE-EMITTER TEMPERATURE COEFFICIENT
-0. 8
IC -
22
0501 10
'~
Ie Ie •
!C. COLLECTOR CURRENT ImAde!
IC. COLLECTOR CURRENT ImAde)
~
(III
01
-3 0
10
01
10
100
IC. COLLECTOR CURRENT ImAde!
'B. BASE CURRENT ImAde!
FIGURE 5 - CAPACITANCES
FIGURE 6 - CURRENT-GAIN-BANDWIDTH PRODUCT
;: 40 0
10
~ 300
10
~
Z
....'"
~
30
f-I-
~
..s
TA ·15 0 C_ r--
C,b
50
w
'-'
U
--
t;
--
.......
i"'-
3:
e
Z
;ii
j--.
..................
10
40
0
"'....
0
60 8010
20
~
r40
10 0
80
Z
;;
'"
i3
.r::
....
V
....
e'"
-... Cob
20
10 0
'"
.........
Ob 0810
§
"-
20
04
=>
-
........
VCE
TA ]50(
0
105
01
10
20
30
\ J 10
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-147
f-
0
10
IC. COLLECTOR CURRENT ImAde)
VR. REVERSE VOLTAGE IVolts!
10 v
10)0
\0
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R6JA
556
°CIW
Po
300
mW
2.4
mWrC
R6JA
417
°CIW
TJ, Tste
-55to +150
°C
Collector Current -
Continuous
BCX70GL, HL, JL, KL
CASE 318-03, STYLE 6
SOT-23 (TO-236ABI
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate, ** TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR-5 - 1.0 x 0.75 x 0.062 In.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
GENERAL PURPOSE
TRANSISTORS
DEVICE MARKING
NPNSILICON
I BCX70GL = AG; BCX70HL = AH; BCX70JL = AJ; BCX70KL = AK
Refer to MPS3904 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 2.0 mAde, IE = 0)
V(BR)CEO
45
-
Vde
Emitter-Base Breakdown Voltage
(IE = 1.0 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
20
20
nAde
pAde
20
nAde
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 32 Vde)
(VCE = 32 Vde, TA = 150°C)
ICES
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 10 pAde, VCE
hFE
= 5.0 Vde)
BCX70GL
BCX70HL
BCX70JL
BCX70KL
20
40
100
-
-
(lc
= 2.0 mAde, VCE = 5.0 Vde)
BCX70GL
BCX70HL
BCX70JL
BCX70KL
120
180
250
380
220
310
460
630
(lC
= 50 mAde, VCE =
BCX70GL
BCX70HL
BCX70JL
BCX70KL
60
70
90
100
-
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 1.25 mAde)
(lC = 10 mAde, IB = 0.25 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 1.25 mAde)
(lC = 50 mAde, IB = 0.25 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 2.0 mAde, VCE = 5.0 Vde)
VBE(on)
-
Vde
-
0.55
0.35
0.7
0.6
1.05
0.85
0.55
0.75
Vde
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-148
-
Vde
BCX70GL,HL,JL,KL
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
fr
125
-
MHz
-
4.5
pF
125
175
250
350
250
350
500
700
NF
-
6.0
dB
ton
-
150
ns
toff
-
800
ns
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 5.0 Vde, f = 100 MHz)
Output Capacitance
(VCE = 10 Vde, IC = 0, f = 1.0 MHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
Cobo
-
hfe
BCX70GL
BCX70HL
BCX70JL
BCX70KL
Noise- Figure
(lC = 0.2 mAde, VCE = 5.0 Vde, RS = 2.0 kil,
f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn-On Time
(lC = 10 mAde, IBl
=
Turn-Off Time
(lB2 = 1.0 mAde, VBB
RL = 990 0)
1.0 mAde)
=
3.6 Vde, Rl = R2 = 5.0 kil,
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-149
•
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCBO
45
V
Emitter-Base Voltage
VEBO
5.0
V
IC
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
Collector Current -
Continuous
BCX71GL, JL, KL
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA =. 25·C
Derate above 25"C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate,"" T A
Derate above 25·C
R8JA
556
Po
300
mW
2.4
mWI"C
R8JA
417
·CIW
-55 to +150
·C
= 25·C
Thermal Resistance Junction to Ambient
3 Collector
mWI"C
.C/W
Junction and Storage Temperature
TJ, TSN
'FR-5 = 1.0 x 0.75 x 0.062 .n.
"'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
,~' ~()
2 Emitter
GENERAL PURPOSE
TRANSISTORS
PNPSILICON
DEVICE MARKING
I BCX71GL = BG; BCX71JL = BJ; BCX71KL = BK
I
ELECTRICAL CHARACTERISTICS
(TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (lC
Emitter-Base Breakdown Voltage (IE
Collector Cutoff Current (VCE
(VCE
=
= 2.0 mAde, 18 = 0)
= 0)
1.0 pAde, IC
= 32 Vde)
= 32 Vde, TA =
V(Bfl)CEO
45
V(BR)EBO
5.0
ICES
-
150·C)
20
20
Vde
Vde
nAde
pAde
ON CHARACTERISTICS
DC Current Gain
(lC = 10 pAde, VCE
=
hFE
5.0 Vde)
BCX71GL
BCX71JL
BCX71KL
-
100
-
40
-
(lC
= 2.0 mAde, VCE =
5.0 Vde)
BCX71GL
BCX71JL
BCX71KL
120
250
380
220
460
630
(lC
=
1.0 Vde)
BCX71GL
BCX71JL
BCX71KL
60
100
110
-
BCX71GL
BCX71JL
BCX71KL
125
250
350
250
500
700
VCE(sat)
-
0.25
0.55
Vde
VBE(sat)
0.6
0.68
0.85
1.05
Vde
VBE(on)
0.6
0.75
Vde
(IC
=
50 mAde, VCE
2.0 mAde, VCE
=
= 5.0 Vde, f =
1.0 kHz)
= 10 mAde, IB = 0.25 mAde)
= 50 mAde, IB = 1.25 mAde)
Base-Emitter Saturation Voltage (lC = 10 mAde, IB = 0.25 mAde)
(lC = 50 mAde, IB = 1.25 mAde)
Base-Emitter On Voltage (lC = 2.0 mAde, VCE = 5.0 Vde)
Output Capacitance (VCE = 10 Vde, IC = 0, f = 1.0 MHz)
Collector-Emitter Saturation Voltage (lC
(lC
Noise Figure
(lC = 0.2 mAde, VCE
Cobo
NF
= 5.0 Vde,
RS
= 2.0 kll, f
= 1.0 kHz, BW
=
200 Hz)
-
SWITCHING CHARACTERISTICS
Turn-On Time (lC
= 10 mAde, IBl = 1.0 mAde)
Turn-Off Time
(lB2 = 1.0 mAde, VBB = 3.6 Vde, Rl
= R2
= 5.0 kll, RL
= 990 0)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-150
-
6.0
pF
6.0
dB
BCX7S-7L, -SL,-9L,-IOL
BCX79-7L,-SL,-9L,-IOL
MAXIMUM RATINGS
Rating
Symbol
BCX
78
BCX
79
Unit
Collector-Emitter Voltage
VCEO
32
45
Vdc
Collector-Base Voltage
VCBO
32
45
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
100
mAde
Po
625
5.0
mW
mW/oC
Po
1.5
12
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIIJC
83.3
°C/W
Thermal Resistance, Junction to Ambient
R8JA
200
°C/W
Collector Current - Continuous
Total Device Dissipation @ T A
Derate above 25°C
~
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
., ~~'~'
23
3 Emitter
AMPLIFIER TRANSISTORS
PNPSILICON
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC ~ 10 mAde, IB ~ 0)
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
Collector Cutoff Current
(VCE = 32 V)
(VCE = 45 V)
(VCE = 32 V, TA = 100'C, VBE
(VCE = 45 V, TA = 100'C, VBE
(VCE = 32 V, TA = 125'C)
(VCE = 45 V, TA = 125'C)
V(BR)CEO
BCX78 Series
BCX79 Series
All
= 0.2 V)
= 0.2 V)
BCX7B
BCX79
BCX7B
BCX79
BCX78
BCX79
V(BR)EBO
Series
Series
Series
Series
Series
Series
Emitter-Cutoff Current
(VEBO = 4.0 V, IC = 0)
Vdc
32
45
-
-
5.0
6.B
-
-
-
ICES
ICES
ICEX
ICEX
ICES
ICES
-
lEBO
-
-
-
-
-
10
10
20
20
2.5
2.5
20
Vde
nAde
!LAde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 10 !LAde, VCE
hFE
=
5.0 Vde)
(lc
= 2.0 mAde, VCE = 5.0 Vde)
(lC
=
(lC
=
10 mAde, VCE
=
100 mAde, VCE
1.0 Vde)
= 2.0 Vdc)
20
40
75
100
120
180
250
380
80
120
160
240
40
45
60
60
BCX78-7L, BCX79-7L
BCX78-8L, BCX79-BL
BCX78-9L, BCX79-9L
BCX78-10L, BCX79-10L
BCX78-7L, BCX79-7L
BCX7B-BL, BCX79-8L
BCX7B-9L, BCX79-9L
BCX78-10L, BCX79-10L
BCX7B-7L, BCX79-7L
BCX78-BL, BCX79-8L
BCX7B-9L, BCX79-9L
BCX7B-l0L, BCX79-10L
BCX78-7L, BCX79-7L
BCX7B-BL, BCX79-BL
BCX78-9L, BCX79-9L
BCX7B-l0L, BCX79-10L
140
200
270
340
170
250
350
500
lBO
260
360
500
-
-
-
-
-
220
310
460
630
400
630
1000
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 5.0 mAde)
VCE(sat)
-
-
Base-Emitter Saturation Voltage
VBE(sat)
-
-
1.0
Vde
-
0.7
Vdc
(IC
=
100 mA, IB
=
5.0 mAde)
Base-Emitter On Voltage
(lC = 2.0 mAde, VCE = 5.0 Vde)
VBE(on)
0.55
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-151
-
0.6
Vdc
•
BCX7S-7l, -Sl, -9l, -10l, BCX79-7l, -Sl, -9l, -10l
I
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25"C unless otherwise noted.)
I
Symbol
Min
Typ
tr
-
200
-
Output Capacitance
(VCE = 10 Vdc, IC = 0, f = 1.0 MHz)
Cob
-
2.6
4.5
pF
Input Capacitance
(VBE = 0.5 V, IC = 0, f = 1.0 MHz)
Cib
-
B.5
15
pF
125
175
250
350
200
260
330
520
250
350
500
700
-
1.0
6.0
17
27
-
Characteristic
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 10 mAde, VCE = 5.0 V, f = 100 MHz)
•
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 5.0 Vdc, f = 1.0 kHz)
-
hfe
BCX7B-7L, BCX79-7L
BCX7B-BL, BCX79-BL
BCX7B-9L, BCX79-9L
BCX7B-l0L, BCX79-10L
Noise Figure
(lc = 0.2 mAde, VCE = 5.0 Vdc, Rg = 2.0 kohms, f = 1.0 kHz)
NF
(lC = 10 mA. IBl = 1.0 mA. le2 = 1.0 mAl
(Vee = 3.6 V, Rl = R2 = 5.0 kn)
(RL = 999 ohms)
de
-
Td
Tr
Ton
*See test circuit
-
td
tr
ton
*See test circuit
ts
tf
toft
44
150
400
60
460
800
-
5.0
20
25
150
-
130
40
170
-
Ts
Tf
Toft
(lC = 100 mA, lel = 10 mA, IB2 = 10 mAl
(Vee = 5.0 V, Rl = 500 n, R2 = 700!l)
(RL = 98 ohms)
-
TEST CI RCUIT
+Vss
-10V(VcCI
to OSCilloscope
TR<5ns
RJ = 50n
V
50n
~~lN4935
!,2
< 001
-~
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-152
I
MHz
nS
-
-
BOO
ns
BCX7S-7L, -SL, -SL, -10L, BCX7S-7L, -SL, -SL, -10L
FIGURE 1 - NORMALIZEO OC CURRENT GAIN
FIGURE 2 - "SATURATION" AND "ON" VOLTAGES
1.0
09
500
f-
iA ~ ~50~
I III
200
i.-
Ui 01
0
III
VaEID'). leila ·10
08
VaElon). VCE • 10 V
I-
~ TA
25°C
5V
VCE
-
~
06
~
os
'"
....
..........
~ 04
o
>
0
=>
03
02
VCEI•• I@lle1'a· 10
1
II
1
01
100
10
200
001
0103
050110
IC. COLLECTOR CURRENT (mAl
~
IC
w
'"'"
:;
2
>
16
'"w
4
!
1
o
IC - 20 mA
B
j
0
~
106 mA;+1\
I II I
I
~ -1
I
,--IC - 200 mA
2
II II
!2
.,....-
u::
~
\
w
\
S -2 0
!---
w
'"
:>
\
I-
~ -2
4
~-2
8
,.
'\.
::; 04
50 10100
-55 DC to +125 DC
G-1 6
6
20 3D
FIGURE 4 - BASE EMITTER TEMPERATURE COEFFICIENT
-0 8
lU 1 Ilc -
llL
Icl - 10ImiAI
lI-
o
-io m~
501010
IC. COLLECTOR CURRENT (mAd,)
FIGURE 3 - COLLECTOR SATURATION REGION
4
2030
~
'" -3 2
>
~
0
001
10
01
IC. COLLECTOR CURRENT (mAl
-
FIGURE 5 - CAPACITANCES
10
0
0
FIGURE 6 - CURRENT GAIN·BANDWIDTH PRODUCT
TA" 250C_ I--
i'r-.,
400
~
300
o
o
~
200
~
1~
~
100
z
I"-
Cob
i'--..
0
x
:>
I
.............
0
100
10
01
lB. BASE CURRENT (mAl
~z
-
"
i
V
....
-!--,
......
Va .. 1OV
~
f-
TA"2!>"C
80
&0
<;>
l-
:>
0
JO
u
0
10
04
0& 0810
20
40
& 0 80 10
20
30
10
40
VR. REVERSE VOLTAGE (VOLTSI
20
30
50
10
IC. COLLECTOR CURRENT ImAd,1
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-153
20
3D
50
•
BDBOIA,B,C,D
MAXIMUM RATINGS
Rating
Symbol
BOB BOB BOB BOB
Unit
CASE 29-03. STYLE 1
TO-92 (TO-226AE)
01A 01B 01C 010
Collector-Emitter Voltage
VCEO
45
60
80 100
Vdc
Collector-Base Voltage
VCES
45
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.5
Adc
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
2.5
20
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
3 Collector
":~
1 Emitter
ONE WATT
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
(lc = 10 mA,lB = 0)
BDB01A
BDB01B
BDB01C
BDB01D
V(BR)CEO
45
60
80
100
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
ICBO
BDB01A
BDB01B
BDB01C
BDB01D
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
Vdc
I
0.1
0.1
0.1
0.1
~Adc
100
nAdc
lEBO
ON CHARACTERISTICS
DC Current Gain
(lc = 100 rnA, VCE = 1 V)
(IC = 500 rnA, VCE = 2 VI
Collector-Emitter Saturation Voltage"
(lc = 1000 rnA, IB = 100 rnA)
Collector-Emitter On Voltage"
(lC = 1000 rnA, VCE = 1 V)
hFE
40
25
400
VCE(sat)
0.7
Vdc
1.2
Vdc
VBE(on)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 200 rnA, VCE = 5 V:f = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f
*Pulse Test: Pulse Width
:!SO
=
fr
50
MHz
Cob
1 MHz)
30
300 ,.,,8, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES.
2-154
pF
BDB01 A, B, C, D
FIGURE 1 - D.C. CURRENT GAIN
-
400
--TJ! 12SoC
z
;;:
...'"
200
I---
I-
~
'"u=>
~ 100
W
~
.......
80
60
40
05
~
-
I"'""
-
I--
2SoC
..---SSoc
-
-
r-
I- 1"'"'>-
~
I - r--I-
'"
..............
10
IIII
!:;
'"~
.'"
I~I~ 110 rnA
OS
10
30
IIII
"'
70
10
20
30
IC. COLLECTOR CURRENT ImA)
10
I I
~
'"
'"
~
8
T/= 2sloC I
I
SoomA-
!:;
.'"
~
>
.1. I 1111111
VSE(on)@ VCE = 10 V
w
0.4
!:;
'">
>'
I
0
DOS
-- --
01
os
02
--
1.020
04
0.2
I-
VCEI .. ,)@IC"S= 10
10
so
20
0.5
10
lB. BASE CURRENT (rnA)
FIGURE 4 - BASE·EMITTER
TEMPERATURE COEFFICIENT
>:
40
~
...u.
z
.vs for VSE
-20
;:3
u'
...~.;
0.5
10
2.0
I II
:z:
200 _
VeE" 20 V
TJ o 2SoC
=>
c
~
.
"i'
;;:
'"z
'"
50
10
20
50
IC. COLLECTOR CURRENT (rnA)
100
200
80
100
::
No02
I---
r'.
u
:5
t;
TA - 25°C
200 I---
.....
Tc - 25°C
~ 50
S.O
so
70 10
20
30
IC. COLLECTOR CURRENT ImAI
10 100
10
10
200
""'lOs
"!..
de r"-'; :--de
-
Current Limit
Thermal limit
Second Breakdown L,m,t -
20
30
I
.....
~ 100
'"
0
20
50
10
BDB01A
BDB01B
~g~glg·
20
VCE. COLLECTOR,EMITIER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-155
ms
1001"
If 500
=>
/
10
......
t;; lk
\
20
Duly Cytle';; 10%
.. 2k
~
0
0
2.0
so
10
OS
10
20
VR. REVERSE VOLTAGE IVOLTS)
FIGURE 7 - ACTIVE REGION-SAFE OPERATING AREA
.....-
V ....
Cobo
4.0
01
500
~
'"u=>
SOD
........
10
FIGURE 6 - CURRENT GAIN,BANDWIDTH PRODUCT
300
~
200
TJ" 25°C
60
-: -28
~
-
20
;t
k- ~
~ -24
=
...
100
C,bo
~
w
u
./
=>
:z:
c
SO
r-......
t'
~
i!
20
60
-12
i3 -16
t;
10
FIGURE 5 - CAPACITANCE
.§
~
5.0
SO
...
8
20
IC. COLLECTOR CURRENT ImAI
-O.S
~
~
111111
0
S.O
V- ---
-
-H:::l:±:ItI+ -
06
'"~
r--..
SOD
300
.-
VSEI ..,)@IC/IS= 10
06
"-
200
II IIII
OS
U;
\
100
II 1111
WI 250C
mA
02
70
50
FIGURE 3 - ON VOLTAGES
'"
~
~~
,I'...
SO
11~J~A- 2~0~1
5~
w
!:;
'"
>
~
~
07
10
l
vce = 1.0 V
......
-
FIGURE 2 - COLLECTOR SATURATION REGION
~
....... r-.
100-
46
60 80100
•
BDB02A,B,C,D
MAXIMUM RATINGS
Rating
Symbol BOB BOB BOB BOB
02A 02B 02C 020
Unit
VCEO
45
60
80 100
Vdc
Collector-8ase Voltage
VCES
45
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.5
Adc
Collector-Emitter Voltage
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
2.5
20
Watt
mWrC
TJ, Tstg
-55to+150
°c
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
,:.-©
, Emitter
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
Symbol
I
Max
I
Unit
I
I
RHJC
I
I
50
J
°C/W
I
I
125
°C/W
I
R8JA
ELECTRICAL CHARACTERISTICS (T A
=
I
ONE WATT
AMPLIFIER TRANSISTORS
PNPSILICON
25°C unless otherWise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
(lc = 10 mA,lB = 0)
BDB02A
BDB02B
BDB02C
BDB02D
V(BR)CEO
45
60
80
100
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
Vdc
leBO
BDB02A
BDB02B
BDB02C
BDB02D
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
0.1
0.1
0.1
0.1
~Adc
100
nAdc
lEBO
ON CHARACTERISTICS
DC Current Gain
(lc = 100 mA, VCE = 1 V)
(lc = 500 mA. VCE = 2 Vj
Collector-Emitter Saturation Voltage"
(lC = 1000 rnA, IB = 100 rnA)
hFE
40
25
400
VCE(sat)
Collector-Emitter On Voltage"
(Ie = 1000 mA, VeE = 1 V)
0.7
Vdc
1.2
Vdc
VBE(on)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 200 mA, VCE = 5 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f
*Pulse Test: Pulse Width
~
=
IT
50
MHz
Cob
1 MHz)
30
300 p.,s, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-156
pF
BDB02A, B, C, D
FIGURE 1 - D.C. CURRENT GAIN
400
I 0
TJ"125 C
z
--.. ...........vci
0
;;: 200
25 C
'"
~
"
B
I-
""-
~~
0
-
-55 C
~
100
;
80
"I.OV
0
t\.
~
-~
~
40
01
05
10
20
30
50
70
10
20
30
IC. COLLECTOR CURRENT ImA)
FIGURE 2 - COLLECTOR SATURATION REGION
10
C;
o
~
w
OB
O. 6
\
I
"
Ic"IOmA- 50 mA
~o
~
C;
I
~
04
250 mA
02
;-0.05
0.1
02
-
1.0
'"w
'";
!
2.0
\
5.0
~ VIC~! !~Iv
04
I
>
10
,;
-
02
VCEI,.ti" IC/\e = 10
I)
50
20
50
10
20
50
FIGURE 4 - BASE·EMITTER
TEMPERATURE COEFFICIENT
-12
50
~
/
-1.6
Ovslor VBE
-2.0
I-
~
-24
...~
---
./
0.5
1.0
w
30
;::
10
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (mA)
:z:
r-
2l
o
...:z:
I II
VCE" 2.0 V
TJ"25 0C
-
0:
I-
o
~
z
<[
'!'
z
~
,.;.
~
100
'"
.!:'
500
"
U
100
200
50
01
500
\
I---
«
2k
IE
lk
t;
~ 100
o
:f,
........
50
TA=25°C
1.0
200
.....
100
.
Current limit
ThermalL,mit
.
Second ,8rerk~0'i, L,m,t
2.U
"I.
-., t-dc
=
~g~g~:
BDB02C
BDB02D
-
5.0
10
20
46 60 80100
VCE. COLLECTOR·EMITIER VOLTAGE IVOLTS,
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-157
VIOms
100 !"
C = 25°C KIDs
.....
de
20
10
10 100
50
Duty Cycle';; 10%
i:::> 500
0
20
FIGURE 7 - ACTIVE REGION-SAFE OPERATING AREA
.§
\
05
I0
20
50
10
VR. REVERSE VOLTAGE IVOLTS)
02
'"~ 200 e--
5.0 1.0 10
20
30
50
IC. COLLECTOR CURRENT (mA)
Cobo
........
10
70
/'"
30
25°C
"-
;';
0
0
2.0
TJ
........
:i:
0:
0:
:-
,....
U
FIGURE 6 - CURRENT GAIN-BANDWIDTH PRODUCT
300
!! 20o
t;
200
C,bo
~
u
'Z
~ -2.8
Q;>
100
FIGURE 5 - CAPACITANCE
.§
~
50
20
100
70
~
~
""
;:!
f.--'
10
IC. COLLECTOR CURRENT ImA)
-o.S
~U
---
0
I--
0.5
VSElon)
lB. BASE CURRENT ImA)
'"
5;
......
..l--H:±:±:ttJ:I-- f-
06
~
500 mA
~
0
0
I
\
8
~
>
100mA
in
500
_
VBEI,.,)@lclle" 10
I
>
~
-
300
200
U III
II III
~~I: 25 0 C
TJ"250 C
B
'"
«
~
100
FIGURE 3 - ON VOL TAGES
1.0
I
in
70
50
•
BDC01A,B,C,D
MAXIMUM RATINGS
Rating
Svmbol BDC BDC BDC BDC
01A O1B 01C 010
Collector-Emitter Voltage
VCEO
45
60
BO
100
Vdc
Collector-Base Voltage
VCBO
45
60
BO 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.5
Adc
Collector Current - Continuous
•
Unit
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
1.0
B.O
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
2.5
20
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
2 Collector
3~
B.S~
1 Emitter
ONE WATT
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Svmbol
Max
Unit
Thermal Resistance, Junction to Case
RHJC
50
°C/W
Thermal Resistance, Junction to Ambient
R9JA
125
°C/W
NPN SILICON
Refer to BDB01A for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted)
Characteristic
Svmbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
(i'c = 10 mA, IB = 0)
BDC01A
BDC01B
BDC01C
BDC01D
V(BR)CEO
45
60
BO
100
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = BO V, IE = 0)
(VCB = 100 V, IE = 0)
Vdc
ICBO
BDC01A
BDC01B
BDC01C
BDC01D
Emitter Cutoff Current
(lc = 0, VEB = 5.0 V)
0.1
0.1
0.1
0.1
~Adc
100
nAdc
lEBO
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA. VCE = 1 V)
(IC = 500 mA, VCE = 2 V)
hFE
40
25
Collector-Emitter Saturation Voltage'
(lC = 1000 mA. IB = 100 mAl
Collector-Emitter On Voltage"
(lC = 1000 mA. VCE = 1 V)
400
VCE(sat)
0.7
Vdc
1.2
Vdc
VBE(on)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 200 mA. VCE = 5 V, f = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f
=
fT
MHz
50
Cob
30
1 MHz)
'Pulse Test: Pulse Width", 300 ,.S, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-158
pF
BDC02A,B,C,D
MAXIMUM RATINGS
Rating
Symbol BDC BDC BDC BDC
02A 02B 02C 02D
Unit
Collector-Emitter Voltage
VCEO
45
60
80 lOa
Vdc
Collector-8ase Voltage
VC80
45
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.5
Adc
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
PD
2.5
20
Watt
mW/oC
TJ, Tst9
- 55 to +150
°C
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
2 Collector
~-©
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RHJC
50
°C/W
Thermal Resistance, Junction to Ambient
R9JA
125
°C/W
ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to BDB02A for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise notedl
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
(lc = lOrnA, IB = 0)
BDC02A
BDC02B
BDC02C
BDC02D
V(BRICEO
Collector Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 01
(VCB = 100 V, IE = 0)
'CBO
Emitter Cutoff Current
(IC = 0, VEB = 5.0 VI
'EBO
45
60
80
100
Vdc
0.1
0.1
0.1
0.1
I'Adc
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 100 rnA, VCE = 1 VI
(IC = 500 rnA, VCE = 2 VI
Collector-Emitter Saturation Voltage"
(lC = 1000 mA, 'B = 100 rnA)
hFE
40
25
400
VCE(sat)
Collector-Emitter On Voltage'
(lc = 1000 mA, VCE = 1 VI
0.7
Vdc
1.2
Vdc
VBE(on)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 200 rnA, VCE = 5 V, I = 100 MHzl
IT
50
Output Capacitance
(VCB = 10 V, IE = 0, I = 1 MHz)
*Pulse Test: Pulse Width
0;;;
MHz
Cob
30
300 J.tS, Duty Cycle 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-159
pF
•
BDCOS
BDC07
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
MAXIMUM RATINGS
Rating
Symbol
BDC
07
Unit
Collector-Emitter Voltage
VCEO
300
250
Vdc
Collector-Base Voltage
VCBO
300
250
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Collector Current - Continuous
•
BDC
05
2 Collector
.:_{Q
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
1
8.0
Watt
mWfOC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
2.5
50
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Symbol
Max
Unit
ONE WATT
HIGH VOLTAGE TRANSISTORS
RIIJC
50
°C/W
NPN SILICON
R8JA
125
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
I
I Thermal Resistance, Junction to Case
Characteristic
I Thermal Resistance, Junction to Ambient
1 Emitter
Refer to MPSW42 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lc = 1 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 !lAde, IE = 0)
Vdc
V(BR)CEO
BDC05
BDC07
300
250
Vdc
V(BR)CBO
BDC05
BDC07
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
300
250
-
5.0
5.0
-
Vdc
V(BR)EBO
BDC05
BDC07
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
!lAde
ICBO
BDC05
BDC07
Emitter Cutoff Current
(VBE = 5.0 Vdc. IC = 0)
0.01
!!Adc
lEBO
BDC05
BDC07
-
10
ON CHARACTERISTICS
DC Current Gain
(lc = 25 mAde, VCE
= 20
hFE
Vdc)
BDC05
BDC07
40
50
Collector-Emitter Saturation Voltage
(IC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 20 rnA, IB = 2.0 rnA)
VBE(sat)
-
Vdc
2
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(lc = 10 mAde, VCE = 10 Vdc, f
MHz
fT
= 50 MHz)
60
Collector-Base Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
pF
Cre
2.8
(1) Pulse Test: Pulse Width;:;; 300 I'S, Duty Cycle;:;; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-160
BDC06
BDC08
CASE 29-03, STYLE 14
TO-92 (TO-226AE)
MAXIMUM RATINGS
Rating
Unit
Symbol
BOC
06
08
Collector-Emitter Voltage
VCEO
300
250
Vdc
Collector-Base Voltage
VCBO
300
250
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current - Continuous
BOC
Total Device ~issipation @TA
Derate above 25°C
= 25°C
Po
1
B.O
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
2.5
20
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
2 Collector
~-E9
1 EmItter
ONE WATT
HIGH VOLTAGE TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
PNPSILICON
Thermal Resistance, Junction to Ambient
Refer to MPSW92 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 1 mAde, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100 I'Adc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 I'Adc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
Vdc
V(BR)CEO
BOC06
BOCOS
300
250
-
300
250
-
5.0
5.0
-
Vdc
V(BR)CSO
BOC05
BOC08
Vdc
V(BR)EBO
BOC06
BOC08
I'Adc
ICBO
0.01
BOC06
BOCOS
I'Adc
lEBO
10
BOC06
BOCOS
-
ON CHARACTERISTICS
DC Current Gain
(lc = 25 mA, VCE
= 20
hFE
Vdc)
BOC06
BOCOS
40
50
Collector-Emitter Saturation Voltage
(lc = 20 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 20 mA. IB = 2.0 mAl
VBE(sat)
-
-
-
Vdc
2
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(lC = 10 mAde, VCE = 10 Vdc, I = 50 MHz)
IT
50
Collector-Base Capacitance
(VeB = 30 Vdc, IE = 0, I = 1.0 MHz)
-
pF
Cre
2.8
(1) Pulse Test: Pulse Width:;; 300 I's, Duty Cycle:;; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-161
MHz
•
BF199
CASE 29-04, STYLE 21
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAde
Collector Current - Continuous
•
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
350
2.B
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.0
B.O
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
RHJC
125
°C/W
Thermal Resistance, Junction to Ambient
R8JA
357
°C/W
RF TRANSISTOR
NPN SILICON
Refer to BF240 for graphs.
ELECTRICAL CHARACTERISTICS (T A = 25°C U'hless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 I'Adc,lE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 I'Adc,lC = 0)
V(BR)EBO
Vdc
25
Vdc
40
Vdc
4
Collector Cutoll Cu·rrent
(VCB = 20 Vdc, IE = 0)
nAdc
ICBO
100
ON CHARACTERISTICS
DC Current Gain
(lc = 7 mAdc, VCE
hFE
= 10 Vdc)
40
Base-Emitter On Voltage
(lc = 7 mAdc, VCE = 10 Vdc)
85
mVdc
VBE(on)
770
900
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (2)
(lc = 5 mAdc, VCE = 10 Vdc, I = 100 MHz)
IT
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, I = 1.0 MHz)
MHz
400
750
pF
Cre
0.25
Noise Figure
(lc = 4 rnA, VCE = 10 V, RS = 50 Q, 1= 35 MHz)
dB
NI
2.5
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-162
0.35
BF224
CASE 29-04, STYLE 21
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
50
mAde
Collector Current - Continuous
Unit
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
350
2.8
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
., ~()'23
2 Emitter
THERMAL CHARACTERISTICS
I
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
I
Max
I
Unit
I
R~JC
I
I
125
J
°C/W
J
357
L
I
R/iJA
I
RF TRANSISTOR
NPN SILICON
I
°C/W
Refer to BF240 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 1 00 ~Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 ~Adc, IC = 0)
V(BR)EBO
Vdc
30
Vdc
45
Vdc
4
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
TA
= 25°C
Emiller Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ICBO
100
nAdc
nAdc
lEBO
100
ON CHARACTERISTICS
DC Current Gain
(IC = 7 mAdc, VCE
hFE
= 10 Vdc)
30
Base-Emitter On Voltage
(lc = 7 mAdc, VCE = 10 Vdc)
VBE(on)
Collector-Emitter Saturation Voltage
(lc = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
mVdc
0.77
0.9
Vdc
0.15
SMALL-SIGNAL CHARACTERISTICS
Current Gain
(IC
(lc
Bandwidth Product
300
Common Emitter Feedback Capacitance
(VCE = 10 Vdc, IE = 0, f = 1 MHz)
Noise Figure
(lc = 1.0 mAdc, VCE
= 10 Vdc,
RS
= 50
MHz
fT
= 1.5 mAdc, VCE = 10 Vdc, f = 100 MHz)
= 7 mAdc, VCE = 10 Vdc, f = 100 MHz)
600
850
pF
Cre
0.28
ohms, f
f
= 100 MHz)
= 200 MHz
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-163
dB
Nf
2.5
3.5
•
BF240
BF241
CASE 29-04. STYLE 21
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
25
mAde
Collector Current - Continuous
•
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
350
2.8
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW;oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
,I ~~~
23
THERMAL CHARACTERISTICS
J
Characteristic
Thermal Resistance. Junction to Case
Thermal Resistance, Junction to Ambient
2 Emitter
Symbolj
Max
I
Unit
AM/FM TRANSISTORS
I
I
125
I
I
°C/W
NPN SILICON
357
I
I
ROJC
ROJA
ELECTRICAL CHARACTERISTICS (T A
=
°C/W
25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 1 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 ~Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 ~Adc,IC = 0)
V(BR)EBO
VrI,
40
Vdc
40
Vdc
4
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
nAdc
ICBO
100
ON CHARACTERISTICS
DC Current Gain
(lc = 1 mAdc, VCE
=
-
hFE
BF240
BF241
10 Vdc)
Base·Emltter On Voltage
(lc = 1.0 mAde, VCE = 10 Vdc)
65
35
VBE(on)
220
125
Vdc
0.65
0.70
0.74
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(lc = 1.0 mAde, VCE = 10 Vdc, f
BF240
BF241
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(1) Pulse test: Pulse Width
~
300
~s.
Duty cycle
MHz
fT
= 100 MHz)
600
470
Cre
~
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-164
pF
0.28
0.34
BF240, BF241
FIGURE 1 - CURRENT GAIN-BANDWIDTH PRODUCT
_100 0
:r
,. 70 0~VCE-l0V
Of-TA -250C
BF140
BF141
gc 50
~ 300
~ 200
~z
~"
v.
c
FIGURE 2 - CAPACITANCES
10
w
C,b
'-'
z
g
100
~
z
:.
1
;3 0 5
'">--
o3
u
~
~
Cob
07
;;:
--
04
20
2
---
i3
ere' IE - 0
02 03
10
05 07 1
10
100
10
05
02
01
•
IIII
~1 0
20
VR. REVERSE VOLTAGE IVOLTSI
IC. COLLECTOR CURRENT ImAI
FIGURE 3 - DC CURRENT GAIN
FIGURE 4 - blle
100
VCE-l0V
TA -15 O C
=VCE
10 V
50
z
100 MHz
~
200
~
10 0
;:
O. 7
~
>'"
---
O
w
u
z
;:: 1. 0
O. 6
G
'" O. 5
~
w
f - l MHz
5. 0
40
0
;t
C,b
t-
I--- Cob
l-
~ O. 5
r.3 O. 4
4
ere' IE - 0
O. 3
1
.3
o.2
10
0.5
o.1
20
0.1
IC. COLLECTOR CURRENT {mAl
0.2
05
1.0
20
50
10
VR. REVERSE VOLTAGE VOLTS
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-168
20
100
BF366
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
35
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
mAdc
Collector Current - Continuous
3 Collector
IC
25
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
350
2.B
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
~
25°C
Po
1.0
B.O
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
.~
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ReJC
125
°C/W
Thermal Resistance, Junction to Ambient
R8JA
357
°C/W
ELECTRICAL CHARACTERISTICS (TA
•
2 Emitter
VHF TRANSISTOR
NPN SILICON
~ 25°C unless otherWise noted)
I
Typ.
Max.
Unit
Symbol
Min.
Collector-Emitter Breakdown Voltage
(lC ~ 1.0 mAdc, IB ~ 0)
V(BR)CEO
30
-
-
Vdc
Collector-Base Breakdown Voltage
(lc ~ 100 I'Adc, IE ~ 0)
V(BR)CBO
35
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 100 I'Adc, IC ~ 0)
V(BR)EBO
4.0
-
-
Vdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 15 Vdc, IE ~ 0)
ICBO
-
-
50
nAdc
Collector Cutoff Current
(VCE ~ 12 Vdc, IB ~ 0)
ICEO
-
-
500
nAdc
-
ON CHARACTERISTICS
DC Current Gain
(IC b 3.0 mAdc, VCE ~ 10 Vdc)
(Ie ~ 12 mAdc, VeE ~ 7.0 Vdc)
hFE
Base-Emitter On Voltage
(lc ~ 12 mAdc, VCE ~ 7.0 Vdc)
VBE(on)
15
5.5
-
fT
400
-
-
-
-
1.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC ~ 3.0 mAdc, VCE ~ 10 Vdc, f
~
Feedback Capacitance (Common Emitter)
(VeE ~ 10 Vdc, f ~ 1 MHz)
Noise Figure
(lc
3.0 mAdc, VCB
10 Vdc,
RS ~ 50 Ohms, f ~ 200 MHz)
=
=
Common-Emitter Amplifier Power Gain
(Ie
3.0 mAdc, VeB
10 Vdc,
RS ~ 50 Ohms, f ~ 200 MHz)
=
=
Forward AGe Current
(Gain Reduction ~ 30 dB, VCB
~
MHz
100 MHz)
10 V, f
~
Crb
-
-
0.3
pF
Nf
-
-
3.5
dB
Gpb
14
-
-
dB
IAGC
5
-
200 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-169
B
mAdc
BF371
BF373
MAXIMUM RATINGS
Rating
Symbol
BF
373
Unit
Collector-Emitter Voltage
VCEO
30
45
Vdc
Collector-Base Voltage
VCBO
40
45
Vdc
Em itter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAdc
Collector Current - Continuous
•
BF
371
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
350
2.8
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
PD
1.0
8.0
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Symbol
Max
Unit
ROJC
125
°C/W
R8JA
357
°C/W
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
3 Collector
.~~
2 Emitter
VHF TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance, Junction to Case
I Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
=
NPN SILICON
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
BF371
BF373
V(BR)CEO
30
40
Collector-Base Breakdown Voltage
(lc = 100 pAdc, IE = 0)
BF371
BF373
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
-
Vdc
40
45
-
-
-
V(BR)EBO
4.0
-
-
Vdc
ICBO
-
-
50
nAde
40
15
-
0.5
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 7.0 mAde, VCE = 10 Vde)
(lC = 20 mAde, VCE = 2.0 Vdc)
-
hFE
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
-
-
Base-Emitter On Voltage
(lC = 7.0 mA, VCE = 10 Vdc)
VBE(on)
-
-
0.9
Vdc
tr
400
500
720
720
-
MHz
Cre
-
0.2
0.32
pF
-
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAdc, VCE = 10 Vdc, f
=
100 MHz)
BF371
BF373
Common-Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-170
-
BF374
BF375, C, D
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
100
mAdc
Rating
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
350
2.B
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.0
B.O
Watt
mW/oC
T J, T stg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
,'~~'23
THERMAL CHARACTERISTICS
•
2 Emitter
VHF TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to MPSH 10 for graphs.
ELECTRICAL CHARACTERISTICS
(T A
= 25°C
unless otherwise noted)
I
Typ.
Max.
Unit
Symbol
Min.
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAde, IB = 0)
V(BR)CEO
25
Vdc
Collector-Base Breakdown Voltage
(lc = 10 I'Adc, IE = 0)
V(BR)CBO
30
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 I'Adc, IC = 0)
V(BR)EBO
3.0
Vdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
100
nAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
lEBO
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
hFE
BF374
BF375
BF375C
BF375D
250
120
120
90
70
35
70
35
Collector-Emitter Saturation Voltage
(lc = 1.0 mAde, IB = 0.1 mAde)
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
Base-Emitter On Voltage
(IC = 1.0 mAde, VCE = 10 Vdc)
(lc = 10 mAde, VCE = 10 Vdc
VBE(on)
50
70
mVdc
mVdc
B30
mVdc
700
770
mVdc
mVdc
BOO
MHz
SMALL-SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(IC = 1.0 mAde, VCE = 10 Vdc, f = 100 MHz)
fT
400
0.6
pF
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cre
0.55
Collector-Base Time Constant
(lc = 4.0 mAde, VCE = 10 Vdc, f = 31.B MHz)
rbCc
6
ps
Nf
4
dB
G pe
20
dB
Noise Figure
(lc = 1.0 mAde, VCE = 10 Vdc, f = 100 MHz, Rs = 50 ohms)
Common-Emitter Amplifier Power Gain
(lc = 1.0 mAde, VCE = 10 Vdc, f = 200 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-171
BF374, BF375, C, 0
~ 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (continued) (TA
•
TYPICAL ADMITTANCE PARAMETERS
IIc
Symbol
f - 10.7 MHz
f - 30 MHz
f - 100 MHz
Unit
Glle
0.28
0.4
1.4
mmho
mmho
~
1.0 mAde, VCE
~
10 Vdc, frequency as stated)
Blle
0.6
1.6
5.0
G22e
6.5
7
20
~mho
B22e
0.1
0.3
1.0
mmho
G21e
36
34
30
mmho
B21e
- 0.8
- 2.5
-9
mmho
B12e
- 52
- 150
- 500
~mho
FIGURE 1 - INPUT ADMITTANCE
(Output short circuit)
FIGURE 2 - OUTPUT ADMITTANCE
(Input short circuit)
,
I--vCC
I-- IC= lmA
~==-'VeE =10 v
Ie -lrnA
iE
,
K
,
,K
OK
'0 K
"-
~ 100
~
./
il
~
is
Gil.
8
,
0
./
~ '0
811.
'00
822.
'0
G22.
N
N
,
0
0'
0.305
3510
30
50
,o
'"
,
100
FIGURE 3 -
FORWARD TRANSFER ADMITTANCE
(Output short circuit)
'0
FIGURE 4 -
0.5
'0
50
/'
I£:
0
21.
~
z
«
812.
~
~
0
821e
~
'"
./
0'
V
0
~,
t--
,
0'
0.3
Q5
3
5
'00
REVERSE TRANSFER ADMITTANCE
(Input short circuit)
f=~CE 10V
(----IC - 1 mA
t==l
~ 100
o
30
1k
I==VCE = lOV
c ·lmA
~
03
t - FREQUENCY (MH,)
K
z
,
0'
, - FREQUENCY IMHz)
'0
30
50
00'
'00
1
0.1
I-FREOUENCY (MHzl
.G12. <0.01
0.3
0.5
5
10
FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-172
30
50
100
BF391
thru
BF393
MAXIMUM RATINGS
Symbol
BF BF BF
391 392 393
Unit
Collector-Emitter Voltage
VCEO
200 250 300
Vdc
Collector-Base Voltage
VCBO
200 250 300
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
500
mAdc
Rating
Collector Current - Continuous
Total Device Dissipation@ TA
Derate above 25°C
~
25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation@ TC
Derate above 25°C
~
25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
I
Symbol
Max
Unit
I Thermal Resistance, Junction to Case
RYJC
83.3
°C/W
I Thermal Resistance, Junction to Ambient
R8JA
200
°C/W
Characteristic
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
HIGH VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPSA42 for graphs.
ELECTRICAL CHARACTERISTICS (T A
~ 25°C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC ~ 1.0 mAdc, IB ~ 0)
Collector-Base Breakdown Voltage
(lC ~ 100 ~Adc, IE ~ 0)
200
250
300
-
200
250
300
-
BF391
BF392
BF393
6.0
6.0
6.0
-
Cutoff Current
160 Vdc, IE ~ 0)
200 Vdc, IE ~ 0)
200 Vdc, IE ~ 0)
ICBO
BF391
BF392
BF393
-
0.1
0.1
0.1
Emitter Cutoff Current
(VCB ~ 4.0 Vdc, IC ~ 0)
(VCB ~ 6.0 Vdc, IC ~ 0)
(VCB ~ 6.0 Vdc, IC ~ 0)
-
BF391
BF392
BF393
~Adc
lEBO
Vdc
V(BR)EBO
BF391
BF392
BF393
Vdc
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE ~ 100 ~dc,IC ~ 0)
Collector
(VCB ~
(VCB ~
(VCB ~
Vdc
V(BR)CEO
BF391
BF392
BF393
~Adc
-
-
0.1
0.1
0.1
ON CHARACTERISTICS
DC Current Gain
(IC ~ 1.0 mAdc, VCE ~ 10 Vdc)
(lc ~ 10 mAdc, VCE ~ 10 Vdc)
-
hFE
All Types
All Types
25
40
Collector-Emitter SaturatIOn Voltage
(lc ~ 20 mAdc, IB ~ 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC ~ 20 rnA, IB ~ 2.0 rnA)
VBE(sat)
-
Vdc
2.0
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC ~ 10 mAdc, VCE ~ 20 Vdc, f ~ 20 MHz)
50
Common Emitter Feedback Capacitance
(VCB ~ 60 Vdc, IE = 0, f ~ 1.0 MHz)
(1) Pulse Test: Pulse Width
~
300
~s,
Duty Cycle
MHz
fT
Cre
~
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-173
pF
2.0
•
BF420
BF422
MAXIMUM .RATINGS
Rating
Symbol
BF
420
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current - Continuous
•
BF
422
Unit
300
250
Vdc
300
250
Vdc
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
800
6.4
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
2.75
22
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
2 Collector
~-EQ
1 Emitter
THERMAL CHARACTERISTICS
HIGH VOLTAGE TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to MPSA42 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherWise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(IC = 1 mAde. IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 !-lAdc. IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100 !-lAdc. IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc. IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc. IC = 0)
Vdc
V(BR)CEO
BF420
BF422
300
250
-
300
250
-
Vdc
V(BR)CBO
BF420
BF422
Vdc
V(BR)EBO
5.0
5.0
BF420
BF422
!-lAdc
ICBO
0.01
BF420
BF422
lEBO
BF420
BF422
nAdc
100
-
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAde. VCE
= 20 Vdc)
hFE
50
50
BF420
BF422
Collector-Emitter Saturation Voltage
(lc = 20 mAdc. IB = 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 20 mAo IB = 2.0 mAl
VBE(sat)
-
Vdc
0.5
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain
Bandwidth Product
(lc = 10 mAdc. VCE = 10 Vdc. f = 50 MHz)
MHz
fT
60
Common Emitter Feedback Capacitance
(VCB = 30 Vdc. IE = O. f = 1.0 MHz)
pF
Cre
1.6
(1) Pulse Test: Pulse Width;;; 300 !-ls. Duty Cycle;;; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-174
BF421
BF423
MAXIMUM RATINGS
Rating
Symbol
BF
421
BF
423
Unit
Collector-Emitter Voltage
VCEO
300
250
Vdc
Collector-Base Voltage
VCBO
300
250
Vdc
Em itter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current - Continuous
CASE 29-04, STYLE 14
TO-92 (TO-226AA)
,1 ~()'~.
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
800
6.4
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
2.75
22
Watt
mW/oC
TJ, Tstg
-55to+150
°c
Max
Unit
HIGH VOLTAGE TRANSISTORS
PNP SILICON
Operating and Storage Junction
Temperature Range
2
1 Emitter
3
THERMAL CHARACTERISTICS
Characteristic
I
I Thermal Resistance, Junction to Case
I
Symbol
I
I
RIIJC
R8JA
I
45
°C/W
I
156
°C/W
I Thermal Resistance, Junction to Ambient I
Refer to MPSA92 for graphs.
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherWise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 11)
(lC = 1 mAde, IB = D)
Collector-Base Breakdown Voltage
IIC = 100 I'Adc, IE = D)
Emitter-Base Breakdown Voltage
liE = 100 I'Adc, IC = D)
Collector Cutoff Current
IVCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
IVBE = 5.0 Vdc, IC = 0)
Vdc
VIBR)CEO
BF421
BF423
300
250
-
300
250
-
5.0
5.0
-
Vdc
VIBR)CBO
BF421
BF423
Vdc '
VIBR)EBO
BF421
BF423
I'Adc
ICBO
0.01
BF421
BF423
lEBO
BF421
BF423
nAdc
100
-
ON CHARACTERISTICS
DC Current Gam
IIC = 25 rnA, VCE
= 20 Vdc)
-
hFE
BF421
BF423
50
50
Collector-Emitter Saturation Voltage
(lc = 20 mAdc, IB = 2.0 mAdc)
VCElsat)
Base-Emitter Saturation Voltage
(lc = 20 rnA, IB = 2.0 rnA)
VBElsat)
Vdc
0.5
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAdc, VCE = 10 Vdc, f = 50 MHz)
MHz
fT
60
Common Emitter Feedback Capacitance
IVCB = 30 Vdc, IE = 0, f = 1.0 MHz)
pF
Cre
2.8
11) Pulse Test: Pulse Width:;:; 300 I'S, Duty Cycle:;:; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-175
•
BF491
thru
BF493
MAXIMUM RATINGS
Rating
Symbol
SF SF SF
491 492 493
Unit
Collector-Emitter Voltage
VCEO
200 250 300
Vdc
Collector-Base Voltage
VCBO
200 250 300
Vdc
Em itter-Base Voltage
VEBO
6.0
Vdc
IC
500
mAde
Collector Current - Continuous
•
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mWrC
TJ, Tstg
-55 to +150
°C
Symbol
Max
Unit
ReJC
R6JA
83.3
°C/W
200
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
I
Characteristic
I Thermal Resistance, Junction to Case
I Thermal Resistance, Junction to Ambient
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
"~~
, Emitter
HIGH VOLTAGE TRANSISTORS
PNPSILICON
Refer to MPSA92 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherWise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(IC = 1 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 ~Adc,IE = 0)
V(BR)CEO
BF491
BF492
BF493
200
250
300
-
200
250
300
-
Emitter-Base Breakdown Volt'ge
(IE = 100 ~Adc, IC = 0)
6.0
6.0
6.0
-
-
0.1
0.1
0.1
Vdc
V(BR)EBO
BF491
BF492
BF493
Collector Cutoff Current
(VCB = 160 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
ICBO
BF491
BF492
BF493
Emitter Cutoff Current
(VCB = 4.0 Vdc, IC = 0)
(VCB = 6.0 Vdc, IC = 0)
(VCB = 6.0 Vdc, IC = 0)
-
BF491
BF492
BF493
~Adc
lEBO
Vdc
V(BR)CBO
BF491
BF492
BF493
Vdc
~Adc
-
-
0.1
0.1
0.1
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAde, VCE = 10 Vdc)
(lc = 10 mAde, VCE = 10 Vdc)
-
hFE
25
40
All Types
All Types
Collector-Emitter Saturation Voltage
(lc = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 20 mA, IB = 2.0 mAl
VBE(sat)
-
Vdc
2.0
Vdc
2.0
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
50
Common Emitter Feedback Capacitance
(VCB = 100 Vdc, IE = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width"" 300
~s,
MHz
fT
pF
Cre
1.6
Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-176
BF493S
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
350
Vdc
Collector-Base Voltage
VCBO
350
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
500
mAdc
Rating
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5.0
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
DC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
3 Collector
~.()
1 Emitter
HIGH VOLTAGE TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
PNP SILICON
Thermal Resistance, Junction to Ambient
ReIer to MPSA93 lor graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAdc, IB = 0)
V(BR)CEO
350
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 !£Adc, IE = 0)
V(BR)CBO
350
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 /LAdc, IC = 0)
V(BR)EBO
6.0
-
Vdc
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 250 Vdc)
ICES
-
10
nAdc
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
lEBO
-
0.1
!£Adc
Collector Cutoff Current
(VCB = 250 Vdc, IE = 0, TA = 25'C)
(VCB = 250 Vdc, IE = 0, TA = 100'C)
ICBO
-
0.005
1.0
/L Adc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc)
(lC = 10 mAdc, VCE = 10 Vdc)
-
hFE
25
-
40
-
Collector-Emitter Saturation Voltage
(lC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
-
2.0
Vdc
Base-Emitter On Voltage
(lc = 20 rnA. IB = 2.0 mAl
VBE(sat)
-
2.0
Vdc
fy
50
-
MHz
Cre
-
1.6
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, I = 20 MHz)
Common-Emitter Feedback Capacitance
(VCB = 100 Vdc, IE = 0, 1= 1.0 MHz)
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2·177
pF
•
BF844·
BF845
MAXIMUM RATINGS
Rating
Unit
400
350
Vdc
450
400
Vdc
BF
844
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
300
mAde
Collector Current - Continuous
•
BF
845
Symbol
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5.0
mW
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
1 Emitter
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to M PSA44 for gra phs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 1.0 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(IC = 100 ~Adc, VBE = 0)
Collector-Base Breakdown Voltage
(IC = 1 00 ~Adc, IE = 0)
V(BR)CEO
BF844
BF845
400
350
-
450
400
-
450
400
--
6.0
-
-
0.1
0.1
-
500
500
V(BR)CES
BF844
BF845
V(BR)CBO
BF844
BF845
Emitter-Base Breakdown Voltage
(IE = 10 ~Adc,IC = 0)
Both Types
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
(VCB = 320 Vdc, IE = 0)
BF844
BF845
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
(VCE = 320 Vdc, VBE = 0)
BF844
BF845
V(BR)EBO
ICBO
ICES
Emitter Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
Both Types
lEBO
vdc
-
Vdc
Vdc
-
Vdc
~Adc
nAde
0.1
~Adc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 1.0 mAde, VCE = 10 Vde)
(IC = 10 mAde, VCE = 10 Vdc)
(IC = 50 mAde, VCE = 10 Vdc)
(IC = 100 mAde, VCE = 10 Vdc)
Both
Both
Both
Both
Collector-Emitter Saturation Voltage (1)
(lc = 1.0 mAde, IB = 0.1 mAde)
(IC = 10 mAde, IB = 1.0 mAde)
(IC = 50 mAde, IB = 5.0 mAde)
Both Types
Both Types
Both Types
hFE
Types
Types
Types
Types
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(1) Pulse Test: Pulse Width;> 300
~S
40
50
45
20
VBE(sat)
-
-
-
--
0.4
0.5
0.75
-
0.75
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
-
-
-
Duty Cycle;:o 2.0%.
2-178
200
Vde
Vdc
BF844, BF845
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless atherwise noted.)
C
I
Characteristic
Symbol
Min
Max
Unit
DYNAMIC CHARACTERISTICS
High Frequency Current Gain
(lC= 10 mAdc, VeE = 10Vdc,f= 10MHz)
Both Types
Ihfe l
2.0
-
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Both Types
eob
-
6.0
pF
Emitter-Base Capacitance
(VEB = 0.5 Vdc, Ie = 0, f = 1.0 MHz)
Both Types
Cib
-
110
pF
Turn-On Time
(Vec = 150 Vdc, VBE(off) = 4.0 V,
Ie = 30 mAde, IBI = 3.0 mAde)
Both Types
ton
-
0.6
I's
Both Types
Turn-Off Time
(Vee = 150 Vdc, Ie = 30 mAde, IBI = IB2 = 3.0 mAde)
toff
-
10
1'0
FIGURE 1 - DC CURRENT GAIN
FIGURE 2 - COLLECTOR SATURATION REGION
160
0.50
140
z 120
:c
'"~
100
~
a
80
e.>
CI
~ 60
I
I
u;
II II I
I II
0
Ic=1.0mA
le' IOmA
VCE: 10V
'"
I
I
TA: 125°C
--
-
TA: 25°C
~
~
:>
ex:
\
'"
50
e.>
..,~
TA'250 C
r-...
t-...
0.10
i"'"
..:.
~
10
20
50
100
IC. COLLECTOR CURRENT (mA)
L\
I
I
CI
l-
TA: -55°C
2.0
1\
r\.
~ 0.20
\.
0
r-
O.lO
~
\
1.0
0.40
II II!
IC' 50 mA
~
0
40
20
!:;
200 lOO
0.0
10
lO
100
300
lk
3k
IB' 8ASE CURRENT filA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-179
i'
10k
SDk
•
BF959
CASE 29-04, STYLE 21
. TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Collector Current - Continuous
IC
100
mAdc
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
1/· ~()-'
2
2 Emitter
3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
VHF TRANSISTOR
Thermal Resistance, Junction to Case
RIIJC
63.3
°C/W
NPN SILICON
Thermal Resistance, Junction to Ambient
R8JA
200
°C/W
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 10 f1Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 "Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
20
-
-
30
-
-
3.0
-
-
-
-
35
40
-
-
-
1.0
-
-
1
Vdc
Vdc
Vdc
nAdc
100
ON CHARACTERISTICS
DC Current Gain
(lc = 5 mAde, VCE = 10 Vdc)
(IC = 20 mAde, VCE = 10 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lc = 30 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 30 mAde, IB = 2.0 mAde)
VBE(sat)
-
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 20 mAde, VCE = 10 Vdc, I = 100 MHz)
(lc = 30 mAde, VCE = 10 Vdc, I = 100 MHz)
It
-
700·
600
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, PI = 0, I = 10 MHz)
Cre
Noise Figure
(Ie = 4 rnA, VCE= 10 V, RS = 50 Q, I = 200 MHz)
Nt
MHz
-
-
0.65'
-
-
3
-
pF
dB
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-180
-
BF959
FIGURE 1 - Hf. AT 10 V
FIGURE 2 - VCE Sat AT ICIIB = 10
mV
200
.----- ......-
100
~oo~~DrI
40~
f-"""
50
40
30
30
•
20
20
10
10
2
3
4 5
10
30
20
50
2
rnA
IC
3
4
5
20
10
30
4050rnA
FIGURE 4 - CAPACITANCES
FIGURE 3 - CURRENT -GAIN _. BANDWIDTH.pRODUCT
GHz
,
1.8
1.2
/
/
\
\
\
\
\
1\
\
0.8
\
_\
08
/
'2V-'"
I
/
--
1.2 b--,
\1\
1\
/
0.6
1.4
\.
\.
1/
/V'
IV"
1.4
1.6
'\.
I---
1.6
10V
:::::::-
r-r--
r---.
0.6
I
5y
ib
r--
~
Cob
r--
-
to-.
0.4
ere
0.2
2
345
10
30 4050
20
rnA
2
FIGURE 5 - INPUT IMPEDANCE AT 30 MHz
3
4
5
10
v
20
FIGURE 6 - OUTPUT IMPEDANCE AT 30 MHz
Y22e
uS
gIl.
a
3
2
VCE -
l.----"
.5
.4
.3
.2
300
200
./'"
---.
110V
~
VV
Vg22e
~
V
VCE = 10V
1'-.
100
bl •
50
40
1/
/
.L
30
20
.1
~)I
10
2
3
4
5
10
20
30
2
ICmA
345
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-181
10
20
30
rnA
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
2.0
Vdc
IC
25
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
RIiJA
556
'C/W
Po
300
mW
2.4
mWI'C
R9JA
417
'C/W
TJ. Tsta
-55 to +150
'c
Collector Current -
Continuous
BFR92L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS'
Characteristic
Total Device Dissipation FR-5 Board.'
TA = 25'C
Derate.above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate." TA = 25'C
Derate above 25'C
3 Collector
,~' ~~
2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
"FR·5 = 1.0 x 0.75 x 0.062 In.
'"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
RF TRANSISTOR
NPNSILICON
DEVICE MARKING
I BFR92L
I
= PI
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Symbol
Charactaristic
, Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 rnA)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lC = 100 pAl
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(lC = 100 pAl
V(BR)EBO
2.0
-
ICBO
-
50
nA
hFE
25
-
-
0.5
Vdc
1.2
Vdc
-
MHz
Collector Cutoff Current
(VCB = 10V)
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 14 rnA, VCE = 10 V)(1)
Collector-Emitter Saturation Voltage(l)
(lC = 25 rnA. IB = 5.0 rnA)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 25 rnA. IB = 5.0 rnA)
VBE(sat)
-
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 14 rnA, VCE = 10 V. f = 500 MHz)
Noise Figure
(VCE = 1.5 V. IC = 3.0 rnA. RS = 50
n. f
tr
5 GHz
(Typ)
NF
-
Ccb
-
= 500 MHz)
Capacitance-Collector to Base
(VCB = 10 Vdc. f = 1.0 MHz)
(1) Pulse Width", 300 "". Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-182
3.0
(Typ)
dB
0.7
(Typ)
pF
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
2.0
Vdc
IC
25
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
"CIW
Po
300
mW
2.4
mWrC
R8JA
417
"CIW
TJ, Tstg
-55to+150
"C
Rating
Collector Current -
Continuous' .
BFR93L
CASE 318·03, STYLE 6
SOT·23 (TO·236ABI
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Beard,'
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to:~mbient
Total Device Dissipation
Alumina Substrate," TA = 2i"C
Derate above 25"C
Thermal Resistance Junction to A.mbient
Junction and Storage Temperature
3 Collector
,~' ~-E9
•
2 Emitter
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
RF TRANSISTOR
NPN SILICON
DEVICE MARKING
BFR93L = Rl
ELECTRICAL CHARACTERISTICS
(TA = 25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mAl
V(BR)CEO
12
Collector-Base Breakdown Voltage
(lC = 10 pAl
V(BR)CBO
15
Emitter-Base Breakdown Voltage
(IE = 100 pAl
V(BR)EBO
2.0
-
-
50
nA
50
nA
10
nA
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 10 V)
ICEO
Collector Cutoff Current
(VCB = 10V)
ICBO
Emitter Cutoff Current
(YEB = 1.0 V)
lEBO
-
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mA, VCE - 5.0 V)
(lc = 30 mA. VCE ~ 5.0 V)
hFE
26
25
-- -
Collector-Emitter Saturation Voltaga
(lC = 35 mA, IB = 7.0 mAl
VCE(sat)
Base-Emitter Saturation Voltago
(lC = 35 mA. IB = 7.0 mAl
VBE(sat)
-
tr
NF
-
-
0.5
Vdc
1.2
Vdc
4.5
-
GHz
-
3.0
dB
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 30 mA. VCE = 5.0 V, f = 500 MHz)
Noise Figura
(VCE = 5.0 V, IC
= 2.0
mA. RS
=
500, f
= 30 MHz)
MO}OROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-183
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
15
Vdc
VCBO
25
Vdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
R8JA
417
°CIW
TJ, Tsta
-55 to + 150
°C
Collector-Emitter Voltage
Collector-Base Voltage
BFS17L
CA$E 318-03, STYLE 6
S~T-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25°C
=
3 Co1lector
,~' ~()
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
*FR·5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
RF TRANSISTOR
NPN SIUCON
DEVICE MARKING
BFS17L
=
El
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 10 rnA)
V(BR)CEO
15
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAl
V(BR)CBO
25
-
Vdc
Collector Cutoff Current
(VCE = lOV)
ICEO
-
25
nA
Collector Cutoff Current
(VCB = 10 V)
ICBO
-
25
nA
Emitter Cutoff Current
(VEB = 4.0 V)
lEBO
-
100
pA
20
20
150
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(lc = 2.0 rnA, VCE
(lc = 25 rnA, VCE
-
hFE
= 1.0 V)
= 1.0 V)
-
Collector-Emitter Saturation Voltage
(lC = 10 rnA. IB = 1.0 rnA)
VCE(sat)
-
0.4
V
Base-Emitter Saturation Voltage
(lC = 10 rnA, IB = 1.0 rnA)
VBE(sati
-
1.0
V
1.0
1.3*
-
-
1.0'
pF
-
5.0*
dB
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 2.0 rnA, VCE = 5.0 V, I = 500 MHz)
(lc = 25 rnA. VCE = 5.0 V, I = 500 MHz)
IT
CCB
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
(lC = 2.0 rnA. VCE
NF
=
5.0 V, RS
=
50
n, f =
;
30 MHz)
*Typ
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-184
GHz
-
MAXIMUM RATINGS
Svmbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
100
Vdc
Collector-Emitter Voltage
RBE ~ 10 kO
VCER
110
Vdc
IC
100
mAde
Svmbol
Max
Unit
Po
225
mW
1.8
mWfC
R8JA
556
'CfW
Po
300
mW
2.4
mWfC
R8JA
417
'CfW
TJ. Tstg
-55 to +150
·C
Collector Current -
Continuous
BSS63L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board.'
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate." TA
Derate above 25'C
~
3 Collector
,~' ~~
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
'FR-5 ~ 1.0 x 0.75 x 0.062 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
HIGH VOLTAGE TRANSISTOR
PNP SILICON
DEVICE MARKING
BSS63L
~
T1
ELECTRICAL CHARACTERISTICS (TA
~ 25'C unless otherwise noted.)
Typ
Max
Unit
-
Vde
-
Vdc
110
-
-
Vdc
6.0
-
-
Vde
100
nAdc
10
!ROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2·197
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Yoltage
RatIng
VCEO
10
Ydc
Collector-Base Voltage
VCBO
15
Ydc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
30
mA
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R9JA
556
"CIW
Po
300
mW
2.4
mWrC
R9JA
417
0c/w
TJ, Tsta
-55 to +150
°c
Collector Current -
Continuous
tlMBR536L
CASE 318-03, STYLE 6
SOT-23 (TO-236ABI
'.' ~()-
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate,'* TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
2
"GH FREQUENCY
TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
I MMBR536L
I
= 7R
ELECTRICAL CHARACTERISTICS
(TC
= 25°C
*For both package types unless otherwise noted.)
I
Characteristic
Symbol
I
Min
I
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
= 2.0 mA, IB = 0)
= 100 pA, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 /loA, IC = 0)
Collector Cutoff Current (VCB = 10 Vdc, IE = 0)
Collector-Emitter Breakdown Voltage (lC
Y(BR)CEO
10
Collector-Base Brea'kdown Voltage (lC
V(BR)CBO
15
V(BR)EBO
4.5
ICBO
-
Vdc
Vdc
-
Vdc
10
nAdc
ON CHARACTERISTICS
I DC Current Gain (lC = 20 rnA, VCE = 5.0 V)
20
200
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(lC = 20 mAde, VCE = 5.0 Ydc, f
Collector-Base Capacitance
(VCB = 5.0 Vdc, IF = 0, f
= 1.0 GHz)
= 1.0 MHz)
tr
-
5.5
-
GHz
Ccb
-
0.8
1.2
pF
-
14
8.0
FUNCTIONAL TESTS
Gain @ Noise Figure
(lC = 10 mAde, VCE
Noise Figure
(lC = 10 mAde, VCE
= 5.0 Vdc)
= 5.0 Vdc)
f
f
f
f
= 500 MHz
= 1.0GHz
= 500 MHz
= 1.0 GHz
GNF
NF
-
4.5
6.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIDOES
2-198
-
dB
dB
MMBR536L
0
5
8
O~ ......
6
5
.....~
4
,
2
10
15
IC. COLLECTOR CURRENT ImA)
r--
..........
.........
I
1_ I I I
~ ......GUm'.
~~
15211 2
0
:" ~
15~112
I
i"r-: ~
VCE=~
5
IC
o
0.2
_
15,,12)(1 - 152212) _
GUm.. - (1
-.....;:
•
0.5
f. FREQUENCY IGHz)
0.3
Figure 2. Maximum Available Gain (GAmaxl
versus Frequencv
0 .........
5
...........
I 1 1
0.2
5
...........; ~
...... r--,
VCE = 5 V
IC = 20mA
o
Figure 1. Current Gain-Bandwidth Product
versus Collector Current
........
~
5
25
20
-
k;;.1
0
VCE = 5 V
f = 1 GHz
0
I
I
I 115111 I
GAm •• = ~ Ik ± ~-
i
20 mA_
b
0.5
f. FREQUENCY (GHz)
0.3
Figure 3. Maximum Unilateral Gain (GUmaxl
and Insertion Gain (IS21121
versus Frequency
10
20
I I
f = 500 MHz
~~
0
",
F
f../'
0
-
,..,
f = 1 GHz
,,-
-
f - 500 MHz
VCE = 5V
8
12
Ic. COllECTOR CURRENT (mA)
16
-
f - 1 GHz
-I""'
VCE = 5V
o
o
20
Figure 4. Gain at Noise Figure versus
Collector Current
8
12
Ie. COLLECTOR CURRENT (mA)
16
Figure 5. Noise Figure versus Collector Current
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-199
20
MMBR536L
2
~
en
~
I
1
•
-
---
o
o
I
f = 1 MHz
i'-..
r\. .........
1
.......
I
I--
jl
--
r----.
~
Cobo
r-.
-+Cob
j
f=lMHz
0
1
2
VeE. BASE-EMlmR VOLTAGE (Vdc)
Figure 6. Input Capacitance versus
Emitter·Base Voltage
2
10
4
6
Vce. COLLECTOR-BASE VOLTAGE (Vdc)
Figure 7. Output Capacitance versus
Coliector·Base Voltage
INPUT/OUTPUT REFLECTION COEFFICIENTS
versus
FREQUENCY
VCE = 10 V. IC = 10 mA
FORWARD AND REVERSE TRANSMISSION COEFFICIENTS
versus
FREQUENCY
VCE = 10 V. IC = 10 mA
+90"
-jSO
COMMON EMITTER S-PARAMETERS
521
5"
512
522
VCE
(Volts)
IC
f
{mAl
(MHz)
15,,1
L
15211
Lt/>
15 121
L
15 221
L
10
5
200
500
1000
1500
2000
0.60
0.37
0.27
0.24
0.22
-44
-70
-105
-138
-166
6.47
3.57
2.16
1.62
1.38
126
97
74
58
44
0.07
0.14
0.22
0.29
0.33
66
60
53
46
42
0.68
0.48
0.40
0.37
0.34
-35
-50
-69
-87
-103
10
200
500
1000
1500
2000
0.48
0.30
0.24
0.24
0.24
-54
-82
-122
-155
178
8.65
4.32
2.52
1.84
1.54
120
94
74
59
46
0.06
0.12
0.20
0.27
0.32
66
62
57
51
47
0.58
0.38
0.32
0.30
0.28
-40
-58
-78
-96
-112
20
200
500
1000
1500
2000
0.39
0.25
0:24
0.24
0.26
-63
10.10
4.77
2.72
1.96
1.63
115
91
73
58
46
0.06
0.11
0.19
0.26
0.32
67
65
60
54
50
0:49
0.32
0.27
0.26
0.25
-50
-65
-84
-102
-119
-94
-136
-167
168
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2·200
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vde
Collector-Base Voltage
VCBO
25
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
30
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R(lJA
556
"CIW
Po
300
mW
2.4
mWrC
R8JA
417
"CJW
TJ, Tstg
-55 to +150
"C
Collector Current -
Continuous
MMBR901L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR·S Board,'
TA = 25"C
Derate above 2S"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 2S"C
Derate above 25"C
3Collecto.
~
. ,
.3
B~S~
1 2
2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 = 1.0 x 0.75 x 0.062 In .
• , Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
RF AMPLIFIER TRANSISTOR
NPNSIUCON
DEVICE MARKING
I MMBR901L
= 7A
ELECTRICAL CHARACTERISTICS
(TA = 25"C unless otherwise noted.)
Charactarlstlc
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc,lB = 0)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
V(BR)CBO
25
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde, IC = 0)
V(BR)EBO
2.0
-
ICBO
-
50
nAde
Cobo
-
1.0
pF
Gpe (1)
16 (Typ)
-
dB
NF(l)
-
1.9 (Typ)
dB
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
Vdc
Vdc
Vdc
ON CHARACTERISncs
DC Current Gain
(lC = 5.0 mAde, VCE = 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f
= 1.0 MHz)
Common-Emitter Amplifier Power Gain
(VCC = 6.0 Vde,lc = 5.0 mAde, f = 1.0 GHz)
Noise Figure
(lc = 5.0 mAde, VCE
= 6.0 Vdc, f =
1.0 GHz)
(1) NOise figure and power gam measured on the Allteeh 7380
son system.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-201
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage-
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
35
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
"C/W
Po
300
mW
2.4
mWrc
R8JA
417
0Cf'N
TJ, Tste
-55 to +150
°C
Collector Current -
Continuous
MMBR920L
CASE 318-03, STYLE 6
SOT·23 (TO·236AB)
'.' .()-
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
= 25°C
Thermal Resistance Junction to Ambient
Junction and !>Iorage Temperature _
2
2 Emitter
RF AMPLIFIER/SWITCHING
TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 m.
•• Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSIUCON
DEVICE MARKING
I MMBR920L
= 7B
ELECTRICAl CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde,lc = 0)
V(BR)EBO
2.0
ICBO
-
Charecterlatic
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
Vdc
Vde
Vde
50
nAde
4.5
-
GHz
-
1.0
pF
ON CHARACTERISTICS
DC Current Gain
(lC = 14 mAde, VCE = 10 Vde)
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 14 mAde, VCE = 10 Vde, f = 0.5 GHz)
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
Noise Figure
(lc = 2.0 mAde, VCE
(lC = 2.0 mAde, VCE
fy
Ceb
= 1.0 MHz)
NF(l)
= 10 Vde, f = 0.5 GHz)
= 10 Vde, f = 1.0 GHz)
Gpe (l)
Common-Emitter Amplifier Power Gain
(lC = 2.0 mAde, VCE = 10 Vde, f = 0.5 GHz)
(lC = 2.0 mAde, VCE = 10 Vde, f = 1.0 GHz)
(1) NOise figure and power gain measured on the Allteeh 7380 50
n system.
-
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2·202
2.4
3.0
15
10
-
dB
dB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
35
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWre
RIiJA
556
°elW
Po
300
mW
2.4
mWre
ROJA
417
°CIW
TJ, Tstg
-55 to +150
°C
Collector Current -
Continuous
MMBR930L
CASE 318·03, STYLE 6
SOT·23 (TO·236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** T A
Derate above 25"<:
=
•
2 Emitter
25°e
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
AMPUFIERISWITCHING
TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSlUCON
DEVICE MARKING
I MMBR930L = 7C
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Typ
Max
-
-
-
-
-
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
12
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
V(BR)CBO
15
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde,lc = 0)
V(BR)EBO
3.0
ICBO
Ceb
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 5.0 Vde, IE = 0)
Vde
Vde
Vde
50
nAde
1.0
pF
ON CHARACTERISTICS
DC Current Gain
(lC = 30 mAde, VCE = 5.0 Vde)
SMALL-8IGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
Noise Figure
(lC = 2.0 mAde, VCE
(lC = 2.0 mAde, VCE
=
1.0 MHz)
NF(l)
= 5.0 Vde, f = 0.5 GHz)
= 5.0 Vde, f = 1.0 GHz)
Gpe(l)
Common-Emitter Amplifier Power Gain
(lC = 2.0 mAde, VCE = 5.0 Vde, f = 0.5 GHz)
(lC = 2.0 mAde, VCE = 5.0 Vde, f = 0.5 GHz)
-
(1) Noise figure and power gain measured on the Ailtech 7380 50 n system.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2-203
1.9
2.5
11
B.O
-
dB
dB
MAXlI't'IUM RATINGS
Symbol
Valua
Unit
Collector-Emitter Voltage
VCEO
5.0
Vdc
Collector-Base Voltage
VCBO
10
Vdc
Emitter-Base Voltage
VEBO
2.0
Vdc
IC
5.0
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
R8JA
556
'c/w
Po
300
mW
2.4
mWrc
R8JA
417
'c/w
TJ, Tstg
-55 to +150
'c
Rating
Collector Current -
Continuous
MMBR931L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
.
,~' ~2 Emitter
RF AMPLIFIER TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSIUCON
DEVICE MARKING
I MMBR931L
= 70
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(IC = 0.1 mAde, IB = 0)
V(BR)CEO
5.0
Collector-Base Breakdown Voltage
(IC = 0.D1 mAde, IE = 0)
V(BR)CBO
10
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde,lc = 0)
V(BR)EBO
2.0
ICBO
-
Characteristic
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Collector Cutoff Currem
(VCB = 5.0 Vde, IE = 0)
Vdc
Vde
Vde
50
nAde
-
0.5
pF
4.3
-
dB
10
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 0.25 mAde, VCE
=
1.0 Vde)
SMALLoSlGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 1.0 Vde, IE = 0, f
Ceb
= 1.0 MHz)
NF(l)
Noise Figure
(IE = 0.25 mAde, VCE
= 1.0 Vde, f = 1.0 GHz)
Gate Power Dissipation
(IE" 0.25 mAde, VCE
= 1.0 Vde, f = 1.0 GHz)
PG(l)
-
(1) NOise figure and power gam measured on the Allteeh 7380 50 n system.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-204
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vde
Collector-Base Voltage
VCBO
14
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
R8JA
417
°CIW
TJ, Tstg
-55 to +150
°C
Collector Current -
Continuous
MMBR2060L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal
Re~istanee
Junction to Ambient
Junction and Storage Temperature
3 Collector
'.' ~-@
2 Emitter
2
RF AMPLIFIER TRANSISTOR
*FR-5 = 1.0 X 0.75 X 0.062 in .
•• Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSILICON
DEVICE MARKING
I MMBR2060L
= 7E
ELECTRICAL CHARACTERISTICS (TA =
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
14
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 4.0, IC = 0)
lEBO
-
Vde
-
50
nAde
100
/lAde
20
2.0
-
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
(lC = 20 mAde, VCE
= 5.0 Vde)
= 10 Vde, f = 500
hFE
MHz)
Collector-Emitter Saturation Voltage
(lC = 80 mAde, IB = 8.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 40 mAde, IB = 20 mAde)
VBE(sat)
-
fr
-
-
0.38
Vde
0.98
Vde
1.0
GHz
1.0
pF
3.0
pF
3.5
dB
-
dB
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 1.0 Vde, f
=
100 MHz)
NF(1)
-
Gpe (1)
12.5
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0)
Ceb
Emitter-Base Capacitance
(VEB = 0.5 Vde, IC = 0)
Ceb
Noise Figure
(VCE = 10 Vde, IE
=
1.5 mAde, f
= 450 MHz)
Common-Emitter Amplifier Power Gain
(VCE = 10 Vde, IE = 1.5 mAde, f = 450 Mhz)
(11 Noise figure and power gain measured on the Ailtech 7380 50
n system.
MOTOROLA SMAll-SIGNAL TRANSISTORS, FETs AND DIODES
2-205
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage.
Rating
VCEO
15
Vde
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
2.5
Vdc
IC
40
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ReJA
556
"crw
Po
300
mW
2.4
mWrC
R6JA
417
"C/W
TJ, Tstg
-55 to +150
"C
Collector Current -
Continuous
MMBR2857L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
'.' .~-'
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25"C
= 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
2
RF TRANSISTOR
NPNSIUCON
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBR2857L = 7K
ELECTRICAL CHARACTERISTICS
(TA
=
25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 3.0 mAde, IB = 0)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lC = 1.0 !lAde, IE = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 10 !lAdc, IC = 0)
V(BR)EBO
2.5
-
ICBO
-
0.05
!lAde
Characterfstlc
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE = 1.0 Vdc)
SMALL-5IGNAL CHARACTERISTICS
fT
1000
-
MHz
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f = 0.1 MHz)
Ceb
-
1.0
pF
Small-5ignal Current Gain
(lC = 2.0 mAde, VCE = 6.0 Vde, f
hfe
50
-
-
NF
-
4.5
dB
GpE
12.5
-
dB
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vde, f
Noise Figure
(lC = 1.5 mAde, VCE
= 100 MHz)
= 1.0 kHz)
= 6.0 Vde, RS = 50 n, f = 450 MHz)
Common-Emitter Amplifier Power Gain
(lC = 1.5 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-206
MAXIMUM RATINGS
Svmbol
Valua
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vde
Collector-Base Voltage
VCBO
30
Vde
VEBO
3.0
Vde
IC
30
mAde
Svmbol
Max
Unit
Po
225
mW
1.8
mWI"C
R6JA
556
'CIW
Po
300
mW
2.4
mWI"C
R6JA
417
'CIW
TJ, Tstg
-55 to +150
'c
Emitter-Base Voltage
Collector Current -
Continuous
MMBR4957L
CASE 318·03. STYLE 6
SOT·23 (TO·236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25"<:
Derate above 25'C
Thermal Resistance Junction to Ambie ....t
Total Device Dissipation
Alumina Substrate," T A = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ~-©2 Emitter
RF AMPLIFIER TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSIUCON
DEVICE MARKING
I MMBR49571 = 7F
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Svmbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, 'B = 0)
V(BR)CEO
30
Collector-Base Breakdown Voltage
(lC = 100 ,.Ade, 'E = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 100 ,.Ade, IC = 0)
V(BR)EBO
3.0
-
'CBO
-
0.1
,.Ade
fr
1,200
-
MHz
Ccb
-
0.8
pF
Gpe
17 (TVp)
-
dB
NF
-
3.0 (Typ)
dB
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IC = 0)
Vde
Vdc
Vde
ON CHARACTERISTlCS
DC Current Gain
(lc = 2.0 mAde, VCE
=
10 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IE = 2.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vde, 'E = 0, f
=
100 MHz)
= 1.0 MHz)
Common-Emitter Amplifier Power Gain(l)
(VCE = 10 Vde, IC = 2.0 mAde, f = 450 MHz)
Noise Figure( 1)
(lC = 2.0 mAde, VCE
= 10 Vde, f = 450 MHz)
(1) Noise figure and P2wer gain measured on the Ailteeh 7380 50 () system.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2·207
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
10
Vde
Collector-Base Voltage
VCBO
15
Vde
VEBO
3.0
Vde
IC
20
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
R8JA
556
°cm
PD
300
mW
2.4
mWrC
R8JA
417
°cm
TJ, Tsta
-55 to +150
°C
Emitter-Ba~e
Voltage
Collector Current -
Continuous
MMBRS031L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate, ** T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
'.' ..-(Q
2 Eminer
2
RF AMPLIFIER TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
1 MMBR5031L = 7G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
·1
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
10
Collector-Base Breakdown Voltage
(lC = 0,01 mAde, IE = 0)
V(BR)CBO
15
Emitter-Base Breakdown Voltage
(IE = 0.01 mAde, IC = 0)
V(BR)EBO
3.0
-
ICBO
-
10
nAde
-
MHz
Collector Cutoff Current
(VCB = 6.0 Vdc, IE = 0)
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 6.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 5.0 mAde, VCE = 6.0 Vdc, f
Collector-Base Capacitance
(VCE = 6.0 Vdc, IE = 0, f
Noise Figure
(lC = 1.0 mAde, VCE
= 0.1
=
tr
100 MHz)
1,000
Ccb
-
1.5
pF
NF(1)
-
2.5
dB
14
25
dB
MHz)
= 6.0 Vde, f = 450 MHz)
Gpe (1)
Common-Emitter Amplifier Power Gain
(lC = 1.0 mAde, VCE = 6.0 Vdc, f = 450 MHz)
(1) Noise figure and power gain measure on Ailteeh 7380 50 0 system.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-208
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
20
Vde
Emitter-Base Voltage
VEBO
2.5
Vde
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R6JA
556
"CIW
Po
300
mW
2.4
mWrC
R6JA
417
"CIW
TJ, TS!!L
-55to +150
"C
Collector Current -
Continuous
MMBR5179L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25"C
=
3 Collector
'.' ..-EQ
2
25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2 Emttter
RF AMPLIFIER TRANSISTOR
NPNSILICON
DEVICE MARKING
I MMBR5179L = 7H
ELECTRICAL CHARACTERISTICS
(TA
=
25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lc = 3.0 mAde, IB = 0)
V(BR)CEO
12
Collector-Base Breakdown Voltage
(lC = 0.01 mAde, IE = 0)
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 0.01 mAde, IC = 0)
V(BR)EBO
2.5
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
-
-
ICBO
-
hFE
25
-
0.02
Vde
Vde
Vde
/'Ade
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE
=
-
1.0 Vde)
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
1.0
Vde
fy
900
-
MHz
Ceb
-
1.0
pF
hfe
25
-
-
-
4.5
dB
15
-
dB
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 5.0 mAde, VCE = 6.0 Vde, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
=
100 MHz)
0.1 to 1.0 MHz)
Small Signal Current Gain
(lC = 2.0 mAde, VCE = 6.0 Vde, f
Noise Figure
(lc = 1.6 mAde, VCE
=
=
1.0 kHz)
NF(l)
=
6.0 Vde, RS
=
50
n, f = 200 Mhz)
Gpe (l)
Common-Emitter Amplifier Power Gain
(VCE = 6.0 Vde, IC = 5.0 mAde, f = 200 MHz)
(1) Noise figure and power gain measured on the Ailtech 7380 50
n system.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-209
•
MAXIMUM RATINGS
Value
Rating
Symbol
404L
404AL
Unit
Collector-Emitter Voltage
VCEO
24
35
Vde
Collector-Base Voltage
VCBO
25
40
Vde
Emitter-Base Voltage
VEBO
12
25
Vde
Collector Current -
Continuous
150
IC
MMBT404L, AL
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
mAde
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R6JA
556
'c/w
Po
300
mW
2.4
mWrC
R6JA
417
'CIW
TJ, Tst!!
-55to +150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'.' ~~2
2 Emitter
CHOPPER TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSIUCON
DEVICE MARKING
I MMBT404L
= 2M; MMBT404AL = 2N
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 "Adc, IC = 0)
V(BR)CEO
24
35
MMBT404L
MMBT404AL
V(BR)CBO
25
40
MMBT404L
MMBT404AL
V(BR)EBO
12
25
MMBT404L
MMBT404AL
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
ICBO
Emitter Cutoff Currant
(VBE = 10 Vde, IC = 0)
IESO
-
DC Current Gain
(lC = 12 mAde, VCE = 0.15 Vde)
hFE
30
-
Collector-Emitter Saturation Voltage
(lC = 12 mAde, IB = 0.4 mAde)
(lC = 24 mAde, IS = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 12 mAde, IB = 0.4 mAde)
(lC = 24 mAde,lB = 1.0 mAde)
VBE(sat)
-
-
Vde
Vdc
Vde
100
nAde
100
nAde
ON CHARACTERISTICS
400
Vde
0.15
0.20
Vde
0.85
1.0
SMALL-5IONAL CHARACTERISTICS
Output Capacitance
(VCB = 6.0 Vdc, IE
= 0)
SWITCHING CHARACTERISTICS
Delay Time
(Vee = 10 Vde,lc = 10 mAde) (Figure 1)
td
Rise Time
(lBl = 1.0 mAde, VBE(off) = 14 Vde)
tr
Storage Time
(VCC = 10 Vde, IC = 10 mAde)
Is
Fall Time
(lSl = IS2 = 1.0 mAde) (Figura 1)
tf
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-210
43
180
675
180
-
ns
ns
ns
ns
MMBT404L, AL
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
VBB
Vee = -10V
RBB
1.0 k
1.0 k
To Scope
Vin~
1
51
Vin
(Volts)
VBB
(Volts)
ton. td. tr
- 12
+1.4
toft. ts and tf
+20.6
-11.6
Voltages and resistor values shown are
for Ie = 10 rnA. le/lB = 10 and 181 = IB2
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-211
•
MAXIMUM RATINGS
Symbol
'(alue
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R6JA
556
0c/w
PD·
300
mW
2.4
mWrC
R6JA
417
.oCIW
TJ, Tstl!
-55to +150
°C
Collector Current -
Continuous
MMBT918L
CASE 318·03, STYLE 6
SOT·23 (TO·236AB)
THERMAL CHARACTERISTICS
Charactarlstic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
.()
3 Collector
,~'
2 Emitter
VHF/UHF TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSIUCON
DEVICE MARKING
MMBT918L = 3B
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise nhted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 3.0 mAde, IB = 0)
V(BR)CEO
15
-
Vde
Collector-Base Breakdown Voltage
(lC = 1.0 pAde, IE = 0)
V(BR)CBO
30
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
3.0
-
Vde
ICBO
-
50
nAde
hFE
20
-
-
0.4
Vde
1.0
Vde
-
MHz
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
fr
600
SMALL-&IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vde, f
=
100 MHz)
Output Capacitance
(VCB = a Vde, IE = 0, f = 1.0 MHz)
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vde, IC
Cibo
= 0, f =
Power Output
(lC = 8.0 mAde, VCB
=
NF
Pout
30
-
mW
Gpe
11
-
dB
1.0 MHz)
Noise Figure
(lC = 1.0 mAde, VCE = 6.0 Vde, RS
f = 60 MHz) (Figure 1)
15 Vde, f
=
50 0,
= 500
MHz)
Common-Emitter Amplifier Power Gain
(lC = 6.0 mAde, VCB = 12 Vde, f = 200 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2·212
pF
-
3.0
1.7
2.0
pF
6.0
dB
MMBT918L
FIGURE 1 - NF, Gpe MEASUREMENT CIRCUIT 20-200
Vcc
VBB
EXTERNAL
100k ' "
0.018 IJ.F
~~--<>3
G
•
50.n
10.018 1J.F
NF Test Conditions
IC = 1.0 Amp
VCE = 6.0 Volts
RS = 5O.n
f = 60 MHz
Gpe Test Conditions
IC = 6.0 mA
VCE = 12 Volts
f
200 MHz
'';
-
=
':, .. 'jr-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-213
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
30
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
R8JA
556
0c/w
Po
300
mW
2.4
mWf'C
R8JA
417
"e1W
TJ, Tst~
-55 to +150
°c
Rating
Collector Current -
Continuous
MMBT930L
CASE 318-03, STYLE 6
SOT-23 ITO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
•
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
= 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'.' .()
3 Collector
2 Emitter
2
GENERAL PURPOSE TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSILICON
DEVICE MARKING
I MMBT930L = lX
Refer to MPS3904 for graphs.
ELECTRICAL CHARACTERISTICS (TA =
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
45
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
45
Emitter-Base Breakdown Voltage
(IE = 10 ,.Ade, IC = 0)
V(BR)EBO
5.0
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
ICBO
Collector Cutoff Current
(VCE = 45 Vde, VBE = 0)
ICES
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
-
Vde
Vde
Vde
10
nAde
10
nAde
10
nAde
10
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 10 ,.Ade, VCE = 5.0 Vde)
(lC = 500 ,.Ade, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
hFE
100
150
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
VBE(sat)
tr
300
-
-
600
1.0
Vde
0.6
1.0
Vde
30
-
MHz
8.0
pF
3.0
dB
SMALL-8IONAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 ,.Ade, VCE = 5.0 Vde, f = 30 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
Cobo
= 0, f = 1.0 MHz)
Noise Figure
(lC = 10 ,.Ade, VCE = 5.0 Vde, RS
f = 10 Hz to 15.7 kHz)
NF
= 10 kG,
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-214
MAXIMUM RATINGS
Rating
Unit
Symbol
MMBT2222L
MMBT2222AL
Collector-Emitter Voltage
VCEO
30
40
Vdc
Collector-Base Voltage
VCBO
60
75
Vdc
Emitter-Base Voltage
VEBO
5.0
Collector Current -
Continuous
Vdc
6.0
600
IC
MMBT2222L, AL
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
mAde
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R6JA
556
'CIW
Po
300
mW
2.4
mWrC
R6JA
417
'CIW
TJ, Tsto
-55 to +150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
•
2 Emitter
GENERAL PURPOSE
TRANSISTORS
NPNSILICON
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBT2222L = lB; MMBT2222AL = lP
ELECTRICAL CHARACTERISTICS (TA
Refer to MPS2222 for graphs.
= 25'C unless otherwise noted.)
Symbol
Charactaristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current
(VCE = 60 Vde, VEB(off)
V(BR)CEO
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA
(VCB = 50 Vde, IE = 0, TA
125'C)
125'C)
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
MMBT2222L
MMBT2222AL
MMBT2222~L
MMBT2222L
MMBT2222AL
MMBT2222L
MMBT2222AL
lEBO
MMBT2222AL
IBL
= 60 Vde, VEB(off) = 3.0 Vde)
-
10
MMBT2222AL
Vde
Vde
Vde
V(BR)EBO
Base Cutoff Current
(VCE
-
60
MMBT2222L
MMBT2222AL
ICBO
=
=
5.0
6.0
40
V(BR)CBO
ICEX
= 3.0 Vde)
75
-
30
MMBT2222L
MMBT2222AL
-
nAde
!lAde
0.Q1
0.01
10
10
10
nAde
20
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde, TA = -55'C)
(lC = 150 mAde, VCE = 10 Vde)(l)
(lC = 150 mAde, VCE = 1.0 Vde)(l)
(lC = 500 mAde, VCE = 10 Vde)(I)
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC
= 500 mAde, IB = 50 mAde)
hFE
35
50
75
35
100
50
MMBT2222AL only
30
40
MMBT2222L
MMBT2222AL
VCE(sat)
MMBT2222L
MMBT2222AL
MMBT2222L
MMBT2222AL
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-215
300
-
-
Vde
0.4
0.3
1.6
1.0
MMbT2222L, AL
ELECTRICAL CHARACTERISTICS (contln4ed)
(TA
=
250C unless otherwise noted)
Ch.racterlltlc
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC
= 600 mAde, IB ..
Symbol
VBE(sat)
50 mAde)
Min
-
Max
Unit
Vde
MMBT2222L
MMBT2222AL
0.6
1.3
1.2
MMBT2222L
MMBT2222AL
-
2.6
2.0
250
300
-
SMAU-8IGNAL CHARACTERISTICS
Current-Gain .,- Bandwidth Product(2)
(lC = 20 mAde, VCE = 20 Vde, f .. 100 MHz)
.
Output Cepaeitance
(VCB = 10 Vde, IE .. 0, f
= 1.0 MHz)
Input Capacitance
(VEB .. 0;6 Vde, IC .. 0, f
= 1.0 MHz)
fT
MMBT2222L
MMBT2222AL
Cobo
Cibo
MMBT2222L
MMBT2222AL
Input Impedance
(lc = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz) ,
(lC = 10 mAde, VCE = 10 Vde, f .. 1.0 k,Hz)
MMBT2222AL
MMBT2222AL
Voltage Feedback Ratio
(lC =.1.0 mAde, VCE = 10 Vde, f .. 1.0 kHzl
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHzj
MMBT2222AL
MMBT2222AL
Small,Signal Current Gain
(lC" 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vdc!.f = 1.0 kHz'j-;
MMBT2222AL
MMBT2222AI,
Output Admittance
(lC" 1.0 mAde, VCE .. 10 Vde, f = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
MMBT2222AL
MMBT2222AL
Collecto~
(IE
Base Time Constant
= 20 Vde, f
='>'20 mAde, VCB
= 31.8M!,!z)
,'Noise Filjure
',
.
(lC = 100 /'Ade, VCE .. 10 Vde, RS = 1.0 kfi, f = 1.0 kHzl
fIWITCHIti'G CHARACTERISTICS
Delay Time
Rise Time
Storage"Time
Fall Time
-
6.0
-
30
25
2.0
0.25
8.0
1.25
-
8.0
4.0
50
76
300
375
5.0
25
35
200
kfi
X 10-4
hfe
hoe
rb'C e
MMBT2222AL
NF
pF
pF
hie
h re
MHz
"mhos
-
150
ps
4.0
dB
10
ns
MMBT2222AL
MM~ only
(VCC = 30 Vde, VBE(off) = 0.5 Vde,
IC = 160 mAde, IBI = 15 mAdel
td
(VCC = 30 Vde, IC = 150 mAde,
IBI .. IB2 = 15 mAde)
ts
tr
tf
-
(1) Pulse Test: Pulse Width", 300 1'1, Duty Cycle'" 2.0%.
(2) fT is defined as the frequency at which Ihfel. extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-216
25
ns
226
ns
60
ns
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Emitter Voltage
VCES
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
Rating
Collector Current -
Continuous
MMBT2369L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
•
Junction and Storage Temperature
3~
B~S~
12
RBJA
556
·CIW
Po
300
mW
2.4
mWI"C
RBJA
417
·CIW
SWITCHING TRANSISTOR
TJ, Tsta
-55to +150
·C
NPN SILICON
Total Device Dissipation
Alumina Substrate,"" TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
3eollecto,
2 Emitter
"FR-5 = 1.0 x 0.75 x 0.062 In.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBT2369L
I
Refer to MPS2369 for graphs.
= lJ
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
I
Typ
Max
Unit
-
Vde
40
-
-
Vde
V(BR)CBO
40
-
-
Vde
V(BR)EBO
4.5
-
-
Vde
-
-
0.4
30
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
15
Collector-Emitter Breakdown Voltage
(lC = 10 ~de, VBE = 0)
V(BR)CES
Collector-Base Breakdown Voltage
(lC = 10 ~de, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 ~de, IC = 0)
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCS = 20 Vde, IE = 0)
(VCB = 20 Vde, IE = 0, TA = 125·C)
ICBO
~de
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 2.0 Vde)
hFE
-
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
Base-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
VBElsat)
0.7
-
Cobo
-
-
4.0
pF
hfe
5.0
-
-
-
5.0
13
ns
8.0
12
ns
10
18
ns
40
20
120
-
0.25
Vde
0.85
Vde
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vde, IE = 0, f = 1.0 MHz)
Small Signal Current Gain
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
SWrrCHING CHARACTERISTICS
Storage Time
(lSI = IB2 = IC = 10 mAde)
ts
Turn-On Time
(VCC = 3.0 Vde, IC = 10 mAde, IBI = 3.0 mAde)
ton
Turn-Off Time
(VCC = 3.0 Vde, IC = 10 mAde, lSI = 3.0 mAde, IB2 = 1.5 mAde)
(1) Pulse Test: Pulse Width" 300 p.s, Duty Cycle" 2.0%.
toft
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-217
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
RatIng
VCEO
60
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
R6JA
556
.c/w
Po
300
mW
2.4
mWI'C
R6JA
417
.c/w
TJ, Tstg
-55 to +150
'C
Collector Current -
Continuous
MMBT2484L
CASE 318·03, STYLE 6
SOT·23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emitter
LOW NOISE TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSILICON
DEVICE MARKING
I MMBT2484L = 1U
Refer to MPSA18 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
60
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CBO
60
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
(VCB = 45 Vde, IE = 0, TA 150'C)
ICBO
Emitter Cutoff Currant
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
-
Vde
Vde
Vde
10
10
nAde
!lAde
10
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
hFE
250
Collector-Emitter Saturation Voltage
(lC = 1.0 mAde, IB = 0.1 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vde)
VBE(on)
-
-
-
800
0.35
Vde
0.95
Vde
6.0
pF
6.0
pF
3.0
dB
SMALL-8IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vde, IE
Cobo
= 0, f = 1 MHz)
Input Capacitance
(VSE = 0.6 Vde, IC = 0, f = 1 MHz)
Noise Figure
(lC = 10 !lAde, VCE = 5.0 Vde, RS = 10 k(l, f
Cibo
NF
= 1.0 kHz, BW
= 200 Hz)
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-218
MAXIMUM RATINGS
Rating
I MPS2907AL
Unit
Symbol
MPS2907L
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAde
Collector Current -
Continuous
I
60
MMBT2907L, AL
Vde
Vde
60
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mwrc
R6JA
556
0c/w
Po
300
mW
2.4
mWrC
R6JA
417
°CIW
TJ, Tsta
-55to +150
°C
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
,~' ~()2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
GENERAL PURPOSE
TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSILICON
DEVICE MARKING
MMBT2907L
=
2B; MMBT2907AL
=
2F
ELECTRICAL CHARACTERISTICS
Refar to MPS2907 for graphs.
(TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
MMBT2907L
MMBT2907AL
60
-
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
60
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
ICEX
-
50
Collector Cutoff Cu rrent
(VCE = 30 Vde, VBE(offl
=
0.5 Vdc)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCS
ICBO
MMBT2907L
MMBT2907AL
= 50 Vde, IE = 0, TA =
Base Current
(VCE = 30 Vde, VBE(off)
125°C)
MMBT2907L
MMBT2907AL
IB
= 0.5 Vde)
-
Vdc
Vde
Vdc
nAde
pAde
0.020
0.010
20
10
50
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE
hFE
-
=
10 Vde)
MMBT2907L
MMBT2907AL
35
75
-
(lC
=
1.0 mAde, VCE
=
10 Vde)
MMBT2907L
MMBT2907AL
50
100
(lC
=
10 mAde, VCE
=
10 Vde)
MMBT2907L
MMBT2907AL
75
100
-
(lC
=
150 mAde, VCE
=
10 Vde)(l)
MMBT2907L, MMBT2907AL
100
300
(lC
= 500 mAde, VCE =
10 Vde)(l)
MMBT2907L
MMBT2907AL
30
50
-
-
0.4
1.6
-
1.3
2.6
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IS = 50 mAde)
VCE(sat)
Sase-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IS = 50 mAde)
VBE(sat)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-219
-
-
-
Vde
Vde
•
MMBT2907L, AL
ELECTRICAL CHARACTERISTICS
(continued) (TA = 25°C unless otherwise noted.)
Characteristic
1
Symbol
Min
fr
I·
Max
Unit
200
-
MHz
Cobo
-
8.0
pF
Cibo
-
30
pF
ton
-
45
ns
td
-
10
ns
tr
-
40
ns
100
n.
80
ns
30
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(I),(2)
(lC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
=
Input Capacitance
(VBE = 2.0 Vdc, IC
= 0, f =
0, f
=
1.0 MHz)
1.0 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
•
Delay Time
(VCC = 30 Vdc, IC
IBI = 15 mAde)
=
150 mAde,
Rise Time
Turn-Off Time
Storage Time
ts
-
tf
-
toff
(VCC = 6.0 Vdc, IC = 150 mAdc,
leI = IB2 = 15 mAdc)
Fall Time
(1) Pulse Test: Pulse Width", 300 ps, Duty Cycle'" 2.0%.
(2) fr is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-220
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
80
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWfC
ROJA
556
'CIW
PD
300
mW
2.4
mW/'C
ROJA
417
'CIW
TJ, Tsta
-55 to + 150
'c
Rating
Collector Current -
Continuous
MMBT3640L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~'
"--©
..
2 EmItter
SWITCHING TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSILICON
DEVICE MARKING
MMBT3640L
=
2J
Refer to MPS3640 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
SymbOl
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC
Collector-Emitter Sustaining Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Current
(VCE
(VCE
(VCE
=
=
=
(lC
(IE
=
(lc
=
100 pAde, VBE
=
100 pAde, IE
100 pAde, IC
6.0 Vde, VBE
6.0 Vde, VBE
= 6.0 Vde, VBE =
10 mAde, IB
= 0)
= 0)
= 0)
= 0)
= 0)
= 0, TA = 65'C)
0)
Vde
4.0
-
ICES
-
0.01
1.0
pAde
IB
-
10
nAde
30
20
120
-
V(BR)CES
12
VCEO(sus)
12
V(BR1CBO
12
V(BR)EBO
Vde
Vde
Vde
ON CHARACTERISTlCS(1)
DC Current Gain
(lc
(lc
=
=
= 0.3 Vde)
= 1.0 Vde)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 10 mAde, IB = 1.0 mAde, TA = 65'C)
= 10 mAde, IB = 0.5 mAde)
= 10 mAde, IB = 1.0 mAde)
= 50 mAde, IB = 5.0 mAde)
10 mAde, VCE
50 mAde, VCE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(IC
(lC
(lc
hFE
VCE(sat)
-
VBE(sat)
0.75
0.8
-
0.2
0.6
0.25
Vde
0.95
1.0
1.5
Vde
SMALL SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
= =
(lC
=
5.0 Vde, IE
= 0.5 Vde,
IC
10 mAde, VCE
=
0, I
= 0, I =
=
= 5.0 Vde, I =
100 MHz)
1.0 MHz)
1.0 MHz)
IT
500
-
Cobo
-
3.5
pF
Cibo
-
3.5
pF
ld
-
10
ns
tr
30
ns
ts
-
20
ns
tl
-
12
ns
-
-
25
60
-
35
75
MHz
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 6.0 Vde, IC
IBl = 5.0 mAde)
Storage Time
(VCC
Delay Time
= 6.0 Vde,
IC
= 50
=
mAde, VBE(off)
50 mAde, IBl
=
=
IB2
1.9 Vde,
= 5.0
Fall Time
Turn-On Time
(VCC = 6.0 Vde, IC
(VCC = 1.5 Vde, IC
Turn-Off Time
(VCC = 6.0 Vde, IC
(VCC = 1.5 Vde, IC
=
=
=
=
50 mAde, VBE(off) = 1.9 Vde, IBl
10 mAde, IBl = 0.5 mAde)
= 5.0 mAde)
50 mAde, VBE(off) = 1.9 V, IBl = IB2
10 mAde, IBl = IB2 = 0.5 mAde)
= 5.0
mAde)
ton
toff
mAde)
ns
(1) Pulse Test: Pulse Width "" 300 ILS, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-221
ns
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
200
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
·CIW
Po
300
mW
2.4
Collector Current -
Continuous
MMBT3903L
MMBT3904L
CASE 318-03. STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate, ** TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R8JA
417
mWrC
.C/W
TJ, Tst!!
-55 to +150
·C
,~'
.()'2 Emitter
GENERAL PURPOSE
TRANSISTORS
*FR·5 = 1.0 l( 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
I MMBT3903L = IV; MMBT3904L = lA
Refer to 2N3903 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde,lB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 "Ade, IE = 0)
V(BR)CBO
60
Emitter-Base Breakdown Voltage
(IE = 10 "Ade, IC = 0)
V(BR)EBO
6.0
-
IBL
-
50
nAde
ICEX
-
50
nAde
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 30 Vde, VEB
Vde
Vde
Vde
= 3.0 Vde)
Collector Cutoff Current
(VCE = 30 Vde, VEB = 3.0 Vde)
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 0.1 mAde, VCE
hFE
(lC
=
1.0 mAde, VCE
=
1.0 Vde)
MMBT3903L
MMBT3904L
35
70
-
(lC
=
10 mAde, VCE
=
1.0 Vde)
MMBT3903L
MMBT3904L
50
100
150
300
(lC
= 50 mAde, VCE =
1.0 Vde)
MMBT3903L
MMBT3904L
30
60
(lC
=
MMBT3903L
MMBT3904L
15
30
-
-
0.2
0.3
100 mAde, VCE
=
1.0 Vde)
MMBT3903L
MMBT3904L
20
40
=
1.0 Vde)-
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 10 mAde,lB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
MMBT3903L
MMBT3904L
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-222
Vde
Vde
0.65
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
-
0.85
0.95
MMBT3903L, MMBT3904L
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Output Capacitance
(VCB = 5.0 Vde, IE = 0, 1= 1.0 MHz)
Characteristic
Cobo
-
4.0
pF
Input Capacitance
(VBE = 0.5 Vde, IC = 0, 1= 1.0 MHz)
Cibo
-
8.0
pF
1.0
1.0
8.0
10
0.1
0.5
5.0
8.0
50
100
200
400
1.0
40
-
6.0
5.0
Input Impedance
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
Small-Signal Current Gain
(lc = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
X 10-4
hre
MMBT3903L
MMBT3904L
hie
MMBT3903L
MMBT3904L
Output Admittance
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Noise Figure
(lC = 100 !LAde, VCE = 5.0 Vde, RS = 1.0 k ohms,
f = 1.0 kHz)
k ohms
hie
MMBT3903L
MMBT3904L
hoe
NF
MMBT3903L
MMBT3904L
/Lmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
RiseTime
Storage Time
(VCC = 3.0 Vde, VBE = 0.5 Vde,
IC = 10 mAde, IBl = 1.0 mAde)
(VCC = 3.0 Vde, IC = 10 mAde,
IBl = IB2 = 1.0 mAde)
td
tr
MMBT3903L
MMBT3904L
Fall Time
Is
tl
-
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-223
35
ns
35
ns
175
200
ns
50
no
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Symbol
Max
Unit
Po
225
mW
1.B
mWrC
RBJA
556
°CIW
Po
300
mW
2.4
mWrC
RBJA
417
°CIW
TJ, Tsm
-55to +150
°C
Collector Current -
Continuous
MMBT3906L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteriatic
Total Device Dissipation FR-5 Board,"
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25°C
= 25°C
. Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' .~.2 EmItter
GENERAL PURPOSE TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
•• Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
I MMBT3906L
= 2A
Refer to 2N3905 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Current
(VCE = 30 Vdc, VBE
IBL
= 3.0 Vde)
Collector Cutoff Current
(VCE = 30 Vde, VBE = 3.0 Vde)
ICEX
-
-
Vdc
Vdc
Vdc
50
nAdc
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 0.1 mAde, VCE = 1.0 Vde)
(lC = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
60
BO
100
60
30
-
-
-
-
300
Vde
0.25
0.4
Vde
0.65
-
0.B5
0.95
SMALL-5IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
100 kHz)
Input Impedance
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f
=
1.0 kHz)
250
-
Cobo
-
4.5
pF
Cibo
-
10.0
pF
fr
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
)
hie
2.0
12
k ohms
h re
0.1
10
X 10-4
hfe
100
400
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-224
MHz
MMBT3906L
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25"C unless otherwise noted)
Characteristic
Output Admittance
(lC = 1.0 mAde, VCE
=
10 Vde, f
Noise Figure
(lC = 100 !£Ade, VCE
=
5.0 Vde, RS
=
Symbol
Min
Max
Unit
hoe
3.0
60
!£mhos
NF
-
4.0
dS
35
ns
35
ns
225
ns
75
ns
1.0 kHz)
=
1.0 k ohm, f
=
10 Hz to 15.7 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1)
P~lse
(VCC = 3.0 Vde, VSE = 0.5 Vde
IC = 10 mAde, IS1 = 1.0 mAde)
td
(VCC = 3.0 Vde, IC = 10 mAde,
IS1 = IS2 = 1.0 mAde)
ts
tr
tf
-
Width .. 300 !£S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-225
..
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
30
V
Collector-BaSe Voltage
VCBO
40
V
Emitter-Base Voltage
VEBO
5.0
V
IC
200
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
'c/w
Po
300
mW
2.4
mWrC
R8JA
417
'C/W
TJ, Tst!!
-55 to +150
'c
Collector Current -
Continuous
Unit
MMBT4123L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25"<:
Derate above 25'C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 = 1.0 x 0.75 x 0.062 in.
,.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
,~' .~()2 Emitter
GENERAL PURPOSE TRANSISTOR
NPNSILICON
I
DEVICE MARKING
MMBT4123L = 5B
,~----------------------------------------------------~
I
ELECTRICAL CHARACTERISTICS
(TA
=
Refer to 2N4123 for graphs.
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IE = 0)
V(BR)CEO
25
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
-
Vde
Vde
Vde
50
nAde
50
nAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 2.0 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde)
hFE
50
25
150
-
0.3
Vde
VBE(sat)
-
0.95
Vde
tr
250
-
MHz
Collector-Emitter Saturation Voltage(l)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(IC = 50 mAde, IB = 5.0 mAde)
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Collactor-Base Capacitance
(IE = 0, VCB = 5.0 V, f = 100 kHz)
Ceb
-
Small-5ignal Current Gain
(lC = 2.0 mAde, VCE = 10 Vde, f
= 1.0 kHz)
hfe
50
200
-
Current Gain -IHigh Frequency
(lC = 10 mAde, VCE = 20 Vde, f
Ihfel
2.5
=
-
-
NF
-
6.0
dB
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f = 100 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f = 100 kHz)
Noise Figure
(lC = 100 pAde, VCE
Cobo
Cibo
100 MHz)
= 5.0 Vde, RS = 1.0 kohm, f = 1.0 kHz)
(1) Pulse Test: Pulse Width = 300 ,.s, Duty Cvele = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-226
4.0
pF
8.0
pF
4.0
pF
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
200
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
PD
350
2.8
mW
mWfC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
PD
1.0
8.0
Watt
mWfC
TJ, Tstg
-55to +150
°c
Symbol
Max
Unit
PD
225
mW
1.8
mWfC
ROJA
556
°CIW
PD
300
mW
2.4
mWfC
ROJA
417
°CIW
TJ, Tst!!
-55 to +150
°C
Operating and Storage Junction
Temperature Range
MMBT4125L
CASE 318-03, STYLE 6
SOT-23 (TO-236ABI
,~'
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
2 Emitter
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
~
.()-
GENERAL PURPOSE TRANSISTOR
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
PNPSILICON
'FR-5 ~ 1.0 x 0.75 x 0.062 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Refer to 2N4125 for graphs.
DEVICE MARKING
MMBT4125L
~
ZD
ELECTRICAL CHARACTERISTICS (TA
~
25°C unless otherwise noted.)
Characteristic
Max
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC ~ 1.0 mAde, IE ~ 0)
V(BR)CEO
30
Collector-Base Breakdown Voltage
(lC ~ 10 pAde, IE ~ 0)
V(BR)CBO
30
-
Emitter-Base Breakdown Voltage
(IE ~ 10 pAde, IC ~ 0)
V(BR)EBO
4.0
-
Vde
Unit
OFF CHARACTERISnCS
Vde
Vde
Collector Cutoff Current
(VCB ~ 20 Vde, IE ~ 0)
ICBO
-
50
nAde
Emitter Cutoff Current
(VBE ~ 3.0 Vde, IC ~ 0)
lEBO
-
50
nAde
hFE
50
25
150
-
ON CHARACTERISnCS
DC Current Gain(1)
(lC ~ 2.0 mAde, VCE ~ 1.0 Vde)
(lC ~ 50 mAde, VCE ~ 1.0 Vde)
-
Collector-Emitter Saturation Voltage(1)
(lC ~ 50 mAde, IB ~ 5.0 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage(1)
(lC ~ 50 mAde, IB ~ 5.0 mAde)
VBE(sat)
-
0.95
Vde
tr
200
-
MHz
Cibo
-
10
pF
Ccb
-
4.5
pF
hie
50
200
Ihlel
2.0
-
-
NF
-
5.0
dB
SMALL-5IGNAL CHARACTERISnCS
Current-Gain - Bandwidth Product
(lC ~ 10 mAde, VCE ~ 20 Vde, I ~ 100 MHz)
Input Capacitance
(VBE ~ 0.5 Vdc, IC
~
0, I
~
100 kHz)
Collector-Base Capacitance
(VCB ~ 5.0 Vdc, IE ~ 0, I
~
100 kHz)
Small-Signal Current Gain
(lC ~ 2.0 mAde, VCE ~ 10 Vdc, I
Current Gain - High Frequency
(lc ~ 10 mAdc, VCE ~ 20 Vdc, I
~
~
1.0 kHz)
100 MHz)
Noise Figure
(lC ~ 100 pAdc, VCE ~ 5.0 Vdc, RS ~ 1.0 kohm,
Noise Bandwidth ~ 10 Hz to 15.7 kHz)
(1) Pulse Test: Pulse Width
~
300
,,"S,
Duty Cycle
~
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-227
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
600
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWfC
R8JA
556
°C/W
Po
300
mW
2.4
mWfC
Collector Current -
Continuous
MMBT4401L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate, '* TA = 25°C
Derate above 25°C
,~' ".~2 Emitter
Thermal Resistance Junction to Ambient
417
R8JA
Junction and Storage Temperature
-55 to
TJ, Tsta
+ 150
°C/W
°C
SWITCHING TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBT4401L
=
2X
ELECTRICAL CHARACTERISTICS
=
(TA
Refer to 2N4401 for graphs.
25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
=
(VCE
Collector Cutoff Current
(lc
=
(lC
=
(IE
=
1.0 mAde, IB
=
0)
= 0)
= 0)
0.1 mAde, IE
0.1 mAde, IC
= 0.4 Vde)
= 35 Vde, VEB = 0.4 Vde)
35 Vde, VEB
(VCE
V(BR)CEO
40
-
Vde
V(BR)CBO
60
-
Vde
V(BR)EBO
6.0
-
Vde
0.1
!lAde
0.1
!lAde
-
-
IBEV
ICEX
-
ON CHARACTERISTICS(l)
= 0.1 mAde, VCE = 1.0·Vde)
= 1.0 mAde, VCE = 1.0 Vde)
= 10 mAde, VCE = 1.0 Vde)
= 150 mAde, VCE = 1.0 Vde)
= 500 mAde, VCE = 2.0 Vde)
(lc = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
(lc = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
DC Current Gain
(lC
(lC
(lC
(lC
(lC
Collector-Emitter Saturation Voltage
hFE
VCE(sat)
20
40
80
100
40
-
-
300
0.4
0.75
Vde
Vde
VBE(sat)
0.75
-
0.95
1.2
fr
250
-
MHz
Ceb
-
6.5
pF
Ceb
-
30
pF
hie
1.0
15
k ohms
h re
0.1
8.0
X 10-4
hfe
40
500
-
hoe
1.0
30
Ikmhos
(VCC = 30 Vde, VEB = 2.0 Vde,
Ic = 150 mAde, IBl = 15 mAde)
td
-
15
ns
tr
-
20
ns
(VCC = 30 Vde, IC = 150 mAde,
IBl = IB2 = 15 mAde)
ts
-
225
ns
tf
-
30
ns
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 20 mAde, VCE = 10 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
100 kHz)
Emitter-Base Capacitance
(V BE = 0.5 Vde, IC = 0, f
=
100 kHz)
Input Impedance
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f
=
1.0 kHz)
Output Admittance
(lC = 1.0 mAde, VCE
=
1.0 kHz)
=
10 Vde, f
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width",; 300 ~, Duty Cycle",; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-228
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
R8JA
556
'c/w
PD
300
mW
2.4
mWrC
R8JA
417
'c/w
TJ, Tstg
-55to +150
'c
Collector Current -
Continuous
MMBT4403L
CASE 318·03, STYLE 6
SOT·23 (TO·236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
~
3Collsct"'
3~
•
B~S~
12
2 EmItter
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
SWITCHING TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.062 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSILICON
DEVICE MARKING
MMBT4403L
~
2T
Refer to 2N4402 for graphs,
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
(VCE
~
(IE
~
~
~
(lC
~
~
~
1.0 mAde, IB
~
0.1 mAde, IE
~
0.1 mAde, IC
35 Vde, VBE
(VCE
Collector Cutoff Current
(lC
0)
0)
0)
0.4 Vde)
35 Vde, VBE
~
0.4 Vde)
V(BRICEO
40
-
Vde
V(BRICBO
40
-
Vde
V(BRIEBO
5.0
-
Vde
IBEV
-
0.1
!lAde
ICEX
-
0.1
!lAde
hFE
30
60
100
-
-
-
lOa
300
ON CHARACTERISTICS
(lC ~ 0.1 mAde, VCE ~ 1.0 Vde)
(lC ~ 1.0 mAde, VCE ~ 1.0 Vde)
(lc ~ 10 mAde, VCE ~ 1.0 Vde)
(lc ~ 150 mAde, VCE ~ 2.0 Vde)(l)
(lc ~ 500 mAde, VCE ~ 2.0 Vde)(1)
DC Current Gain
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
(lc
(lC
~
(lC
(lc
~
~
~
150 mAde, IB
500 mAde, IB
~
150 mAde, IB
500 mAde, IB
~
~
~
20
15 mAde)
50 mAde)
VCE(sat)
-
15 mAde)
50 mAde)
VBE(sat)
0.75
fr
200
-
-
-
-
0.4
0.75
Vde
0.95
1.3
Vde
SMALL-8IGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Collector-Base Capacitance
(VSE
Emitter-Base Capacitance
Input Impedance
(lC
~
Voltage Feedback Ratio
(lC
~
(lC
~
(lC
~
~
(lc
~
0.5 Vde, IC
~
~
~
~
1.0 mAde, VCE
1.0 mAde, VCE
~
~
0, I
0, I
10 Vde, I
1.0 mAde, VCE
~
~
20 mAde, VCE
10 Vde, IE
1.0 mAde, VCE
Small-Signal Current Gain
Output Admittance
(VCB
~
~
100 MHz)
~
~
-
MHz
Ceb
-
~.5
Ceb
-
30
pF
hie
1.5k
15k
ohms
1.0 kHz)
h re
0.1
8.0
X 10-4
~
hie
60
500
-
hoe
1.0
100
I'mhos
1.0 kHz)
10 Vde, I
10 Vde, I
~
140 kHz)
10 Vde, I
~
10 Vde, I
140 kHz)
1.0 kHz)
1.0 kHz)
pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
2.0 Vde,
15 mAde)
td
-
15
ns
tr
20
ns
(VCC ~ 30 Vde, IC ~ 150 mAde,
IBI ~ IB2 ~ 15 mAde)
ts
-
225
ns
tl
-
30
ns
(VCC ~ 30 Vdc, VBE
IC ~ 150 mAde, IBI
~
~
(1) Pulse Test: Pulse Width", 300 I's, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-229
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
50
Vde
Collector-Base Voltage
VCBO
50
Vde
VEBO
3.0
Vde
IC
50
mAde
Emitter-Base Voltage
Collector Current - Continuous
MMBT5086L
MMBT5087L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Po
225
mW
1.8
mWfC
RBJA
556
'CIW
Po
300
mW
2.4
mWfC
R8JA
417
'CIW
TJ, Tstg
-55to +150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Unit
,~'
.:()'2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
LOW NOISE TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
MMBT5086L
=
2P; MMBT5087L
=
2Q
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
50
-
Vde
Collector-Base Breakdown Voltage
(lc = 100 IoIAde, IE = 0)
V(BR)CBO
50
-
Vde
-
10
50
MMBT50B6L
MMBT50B7L
150
250
500
800
(lC = 1.0 mAde, VCE = 5.0 Vde)
MMBT5086L
MMBT5087L
150
250
(lC = 10 mAde, VCE = 5.0 Vde)
MMBT5086L
MMBT50B7L
150
250
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
(VCB = 35 Vde, IE = 0)
ICBO
nAde
ON CHARACTERISTICS
DC Current Gain
(IC = 100 IoIAde, VCE = 5.0 Vde)
-
hFE
-
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.3
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
0.85
Vde
40
-
MHz
-
4.0
pF
150
250
600
900
SMALL-5IGNAL CHARACTERISTICS
fr
Current-Gain - Bandwidth Product
(lC = 500 IoIAde, VCE = 5.0 Vde, f = 20 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE = 0, f = 100 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vde, 1= 1.0 kHz)
(lC = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
Noise Figure
(lC = 20 mAde, VCE = 5.0 Vde, RS = 10 kil,
I = 10 Hz to 15.7 kHz)
(IC
RS
= 100 IoIAde, VCE = 5.0 Vde,
= 3.0 kil, f = 1.0 kHz)
Cobo
h'e
MMBT5086L
MMBT5087L
NF
dB
MMBT5086L
MMBT5087L
-
-
3.0
2.0
MMBT5086L
MMBT5087L
-
3.0
2.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-230
-
MAXIMUM RATINGS
Value
Rating
Symbol
MMBTIi088L
MMB15089L
Collector-Emitter Voltage
VCEO
30
25
Vdc
Collector-Base Voltage
VCBO
35
30
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
50
mAde
Collector Current -
Continuous
Unit
MMBT5088L
MMBT5089L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
R8JA
556
'CIW
Po
300
mW
2.4
mW/'C
R8JA
417
'CIW
TJ, Tsta
-55to +150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA = 25°C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
LOW NOISE TRANSISTORS
*FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBT5088L
=
lQ; MMBT5089L
lR
=
Refer to MPSA18 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 pAde, IE = 0)
MMBT5088L
MMBT5089L
ICBO
MMBT5088L
MMBT5089L
-
35
30
-
-
50
50
-
-
50
100
300
400
900
1200
Vdc
MMBT5088L
MMBT5089L
0)
0)
nAde
lEBO
=
=
-
30
25
V(BR)CBO
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 15 Vde, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vde, IC
(VEB/offi = 4.5 Vde, IC
Vde
V(BR)CEO
MMBT5088L
MMBT5089L
nAde
ON CHARACTERISTICS
DC Current Gain
(lC
=
100 pAde, VCE
=
5.0 Vde)
MMBT5088L
MMBT5089L
(lC
=
1.0 mAde, VCE
=
5.0 Vde)
MMBT5088L
MMBT5089L
350
450
(lC
=
10 mAde, VCE
= 5.0 Vde)
MMBT5088L
MMBT5089L
300
400
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
=
(lC
=
10 mAde, IB
10 mAde, IB
=
=
1.0 mAde)
1.0 mAde)
hFE
VCE(sat)
VBE(sat)
-
-
-
-
0.5
Vde
0.8
Vdc
SMALL SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 pAdc, VCE = 5.0 Vdc, I
= 20 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vdc, IE = 0, I
=
100 kHz emitter guarded)
Emitter-Base Capacitance
(VBE = 0.5 Vdc, IC = 0, I
=
100 kHz collector guarded)
Small Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vdc, I
Noise Figure
(lC = 100 pAde, VCE
I = 10 Hz to 15.7 Hz)
=
tr
50
-
MHz
Ccb
-
4.0
pF
Ceb
-
10
pF
350
450
1400
1800
hfe
1.0 kHz)
MMBT5088L
MMBT5089L
NF
=
5.0 Vdc, RS
=
dB
10 kO,
MMBT5088L
MMBT5089L
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-231
-
3.0
2.0
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
150
Vdc
Collector-Base Voltage
VCBO
160
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
R8JA
556
·C/W
Po
300
mW
2.4
R8JA
417
mWf'C
.C/W
TJ. Tstg
-55 to +150
·C
Rating
Collector Current -
Continuous
MMBT5401L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25·C
Derate above 25·C
•
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ~~.2 Emitter
HIGH VOLTAGE TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.062 m.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
I MMBT5401L = 2L
Refer to 2N5401 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
150
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
160
Emitter-Base Breakdown Voltage
(IE = 10 pAde. IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc. IE = 0)
(VCB = 120 Vdc, IE = O. TA = 100·C)
V(BR)EBO
5.0
-
-
50
50
50
60
50
240
Characteristic
Max
Unit
OFF CHARACTERISTICS
ICBO
-
Vde
Vde
Vde
nAde
pAde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE
(lC = 10 mAde, VCE
(lC = 50 mAde, VCE
hFE
= 5.0 Vde)
= 5.0 Vde)
= 5.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde,lB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
-
Vde
-
-
0.20
0.5
-
1.0
1.0
100
300
MHz
Cobo
-
6.0
pF
hfe
40
200
-
NF
-
8.0
dB
Vde
SMALL-SIGNAL CHARACTERISTICS
fr
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde. f = 100 MHz)
Output Capacitance
(VCB = 10 Vde. IE
= 0, f =
1.0 MHz)
Small Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f
=
Noise Figure
(lC = 200 pAde, VCE = 5.0 Vde, RS
f = 10 Hz to 15.7 kHz)
1.0 kHz)
=
10 ohms,
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-232
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
140
Vde
Collector-Base Voltage
VCBO
160
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
600
mAde
Symbol
Max
Unit
Po
225
mW
Rating
Collector Current -
Continuous
MMBTSSSOL
MMBTSSSIL
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25·C
1.8
mW/"C
ROJA
556
·CIW
Po
300
mW
2.4
mW/"C
ROJA
417
oelW
TJ, Ts!g
-55to +150
·C
= 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3Collecto,
_
.3
~
B~'~
12
•
2 EmItter
HIGH VOLTAGE
TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
I MMBT5550L = IF; MMBT5551L = Gl
Refer to 2N5550 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
140
160
-
160
180
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 !LAde, IE = 0)
Vde
V(BR)CBO
MMBT5550L
MMBT5551L
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
Collector Cutoff Current
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
(VCB = 100 Vde, IE =
(VCB = 120 Vde, IE =
Vde
V(BR)CEO
MMBT5550L
MMBT5551L
V(BR)EBO
ICBO
MMBT5550L
MMBT5551L
MMBT5550L
MMBT5551L
0)
0)
0, TA = 100·C)
0, TA = 100·C)
6.0
-
100
50
100
50
-
50
MMBT5550L
MMBT5551L
60
80
-
(lc = 10 mAde, VCE = 5.0 Vde)
MMBT5550L
MMBT5551L
60
80
250
250
(lC = 50 mAde, VCE = 5.0 Vde)
MMBT5550L
MMBT5551L
20
30
-
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
-
lEBO
Vde
nAde
!LAde
nAde
ON CHARACTERISTICS(2)
DC Current Gain
(lc = 1.0 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
(lc = 50 mAde, IB = 5.0 mAde)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
= 300 ps,
0.15
MMBT5550L
MMBT5551L
-
-
0.25
0.20
-
1.0
MMBT5550L
MMBT5551L
=
Vde
-
VBE(sat)
Duty Cycle
-
Both Types
Both Types
(lc = 50 mAde, IB = 5.0 mAde)
(2) Pulse Test: Pulse Width
-
hFE
Vde
-
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-233
1.2
1.0
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
12
Vde
IC
500
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWI"C
R/lJA
556
'CIW
PD
300
mW
2.4
mWI"C
R/lJA
417
'CIW
TJ, Tsta
-55 to +150
'c
Collector Current -
Continuous
MMBT6427L
CASE 318-03, STYLE 6
SOT-23 (TO-236ABI
THERMAL CHARACTERISTICS
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
•
,:@
Collector 3
Characteristic
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~'
Emitter 1
DARLINGTON TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
I MMBT6427L
=
1V
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise
noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, VBE = 0)
V(BR)CES
40
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(lC = 10 !lAde, IC = 0)
V(BR)EBO
12
-
Collector Cutoff Current
(VCE = 25 Vde, IB = 0)
ICEO
-
1.0
!lAde
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
50
nAde
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
-
50
nAde
10,000
20,000
14,000
100,000
200,000
140,000
Characteristic
Max
Unit
OFF CHARACTERISnCS
Vde
Vde
Vde
ON CHARACTERISnCS
DC Current Gain
(lC = 10 mAde, VCE = 5.0 Vde)
(lC = 100 mAde, VCE = 5.0 Vde)
(lC = 500 mAde, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 0.5 mAde)
(lc = 500 mAde, IB = 0.5 mAde)
VCE(sat)"
Base-Emitter Saturation Voltage
(lC = 500 mAde, IB = 0.5 mAde)
Base-Emitter On Voltage
(lC = 50 mAde, VCE = 5.0 Vde)
-
-
Vde
1.2
1.5
VBE(sat)
-
2.0
Vde
VBE(on)
-
1.75
Vde
Cobo
-
7.0
pF
Cibo
-
15
pF
Ihfel
1.3
-
Vde
-
10
dB
.-
SMALL-SIGNAL CHARACTERISnCS
Output Capacitance
(VCB = 10 Vde, IE
=
Input Capacitance
(VBE = 0.5, IC = 0, f
0, f
=
=
1.0 MHz)
1.0 MHz)
Current Gain - High Frequency
(lC = 10 mAde, VCE = 5.0 Vde, f
=
100 MHz)
NF
Noise Figure
(lC = 1.0 mAde, VCE = 5.0 Vde, RS = 100 kG,
f = 1.0 kHz to 15.7 kHz)
'Pulse re.t: Pulse Width = 300 p.s. Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-234
MAXIMUM RATINGS
Value
Rating
Symbol
MMBT6428L
MMBT6429L
Unit
Collector-Emitter Voltage
VCEO
50
45
Vdc
Collector-Base Voltage
VCBO
60
55
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
200
mAde
Collector Current -
Continuous
MMBT6428L
MMBT6429L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
Total Device ~issipation FR-5 Board,'
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
1.8
mWf'C
•
RaJA
556
"C/W
1 2
Po
300
mW
2.4
mWf'C
RaJA
417
"C/W
TJ, Tsta
-55to +150
"C
Total Device Dissipation
Alumina Substrate," TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3Colleeto,
.3
~
8~S~~
2 Emitter
AMPLIFIER TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBT6428L = 1K; MMBT6429L = 1L
Refer to MPSA18 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
50
45
-
60
55
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
(lc = 1.0 mAde, IB = 0)
MMBT6428L
MMBT6429L
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IE = 0)
(lC = 0.1 mAde, IE = 0)
MMBT6428L
MMBT6429L
V(BR)CEO
Vdc
Vde
V(BR)CBO
Collector Cutoff Current
(VCE = 30 Vde)
ICED
-
0.1
JLAdc
Collector Cutoff Current
(VCB = 30 Vdc, Ie = 0)
ICBO
-
0.G1
JLAde
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
0.01
JLAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.01 mAde, VCE
(lC
= 0.1
(lC
(lc
hFE
= 5.0 Vde)
MMBT6428L
MMBT6429L
250
500
-
mAde, VCE
= 5.0 Vde)
MMBT6428L
MMBT6429L
250
500
650
1250
=
1.0 mAde, VCE
= 5.0 Vde)
MMBT6428L
MMBT6429L
250
500
-
=
10 mAde, Vce
= 5.0 Vde)
MMBT6428L
MMBT6429L
250
500
-
-
0.2
0.6
-
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 100 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vde)
VBE(on)
0.56
0.66
Vde
fy
100
700
MHz
Cobo
-
3.0
pF
Cibo
-
8.0
pF
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vde, f
=
100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VEB = 0.5 Vde, IC
= 0, f =
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-235
..
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
350
Vdc
Collector-Base Voltage
VCBO
350
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IB
250
rnA
IC
500
rnA
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R6JA
556
°CIW
Po
300
mW
2.4
mWrC
R6JA
417
°CIW
TJ, Tsta
-55to +150
°C
Rating
Base Current
Collector Current -
Continuous
MMBT6517L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
•
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~' ~-EQ
2 Emitter
HIGH VOLTAGE TRANSISTOR
NPNSIUCON
*FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
Refer to 2N8617 for graphs.
MMBT6517L = lZ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Max
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 rnA)
V(BR)CEO
350
Collector-Base Breakdown Voltage
(lC = 100 pAl
V(BR)CBO
350
-
Emitter-Base Breakdown Voltage
(IE = 10pA)
V(BR)EBO
6.0
-
Vdc
50
nA
50
nA
Charactarlstlc
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 250 V)
ICBO
Emitter Cutoff Current
(VEB = 5.0 V)
lEBO
-
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 rnA, VCE = 10 V)
(lc = 10 rnA, VCE = 10 V)
(lc = 30 rnA, VCE = 10 V)
(lc = 50 rnA, VCE = 10 V)
(IC = 100 rnA, VCE = 10 V)
hFE
20
30
30
20
15
Collector-Emitter Saturation Voltage
(lC = 10 rnA, IB = 1.0 rnA)
(lC = 20 rnA, IB = 2.0 rnA)
(lC = 30 rnA, IB = 3.0 rnA)
(lC = 50 rnA, IB = 5.0 rnA)
VCE(sat)'
Base-Emitter Saturation Voltage
(lC = 10 rnA. IB = 1.0 rnA)
(lC = 20 rnA, IB = 2.0 rnA)
(lC = 30 rnA, IB = 3.0 rnA)
VBE(sat)
Base-Emitter On Voltage
(lC = 100 rnA, VCE = 10 V)
VEiE(on)
-
IT
40
-
-
200
200
-
Vdc
0.30
0.35
0.50
1.0
Vdc
0.75
0.85
0.90
2.0
Vdc
200
MHz
6.0
pF
80
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 rnA, VCE = 20 V, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 V, f = 1.0 MHz)
Ccb
Emitter·Base Capacitance
(YEB = 0.5 V, f = 1.0 MHz)
Ceb
-
*Pulse Test: Pulse Width = 300 '""s. Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-236
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
350
Vdc
Collector-Base Voltage
VCBO
350
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Base Current
Collector Current -
Unit
IB
250
mA
IC
500
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
R8JA
417
°CIW
TJ, Tsto
-55 to +150
°C
Continuous
MMBT6520L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
=
3 Collector
,~' ~~
2 Emitter
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
HIGH VOLTAGE TRANSISTOR
PNPSIUCON
'FR-5 = 1.0 x 0.75 x 0.062 In.
>'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBT6520L
=
Refer to 2N6520 for graphs.
2Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 rnA)
V(BR)CEO
350
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAl
V(BR)CBO
350
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAl
V(BR)EBO
5.0
-
Vdc
50
nA
50
nA
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 250 V)
ICBO
Emitter Cutoff Current
(VEB = 4.0 V)
lEBO
-
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 rnA. VCE = 10 V)
(lc = 10 rnA, VCE = 10 V)
(lc = 30 rnA. VCE = 10 V)
(lc = 50 rnA. VCE = 10 V)
(lc = 100 mA. VCE = 10 V)
hFE
20
30
30
20
15
Collector-Emitter Saturation Voltage
(lC = 10 rnA, IB = 1.0 rnA)
(lC = 20 rnA, IB = 2.0 rnA)
(lC = 30 rnA, IB = 3.0 mAl
(lC = 50 rnA, IB = 5.0 mAl
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 rnA. IB = 1.0 rnA)
(lc = 20 rnA, IB = 2.0 mAl
(lC = 30 rnA, IB = 3.0 mAl
VBE(sat)
Base-Emitter On Voltage
(lC = 100 rnA, VCE = 10 V)
VBE(on)
-
-
-
-
200
200
Vdc
0.30
0.35
0.50
1.0
Vdc
0.75
0.85
0.90
-
2.0
Vdc
40
200
MHz
6.0
pF
100
pF
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lc = 10 rnA, VCE = 20 V, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 V, f = 1.0 MHz)
Ccb
Emitter-Base Capacitance
(VEB = 0.5 V, f = 1.0 MHz)
Ceb
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-237
•
MAXIMUM RATINGS
Symbol
MMBT8598L
MMBT8599L
Unit
Collector-Emitter Voltage
Rating
VCEO
60
80
V
Collector-E!ase Voltage
VCBO
60
80
V
Emitter-Base Voltage
VEBO
5.0
V
IC
500
mAde
Collector Current -
Continuous
MMBT8598L
MMBT8599L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Po
225
mW
1.8
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
R8JA
417
°CIW
TJ, Tsta
-55to +150
°C
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate, ** T A
Derate above 25°C
= 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Unit
,~' "-~'2 Emitter
GENERAL PURPOSE
TRANSISTORS
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
I MMBT8598L = 2K; MMBT8599L = 2W
Refer to 2N4125 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min·
Max
-
Unit
OFF CHARACTERISTICS
-
Vde
Vde
5.0
-
ICBO
-
100
nAde
lEBO
-
100
nAde
100
100
75
300
-
0.4
-
0.7
0.9
150
-
MHz
Cibo
-
30
pF
Ceb
-
4.5
pF
Collector-Emitter Breakdown Voltage(l)
(IC = 10 mAde, IE = 0)
MMBT8598L
MMBT8599L
V(BR)CEO
60
80
Collector-Base Breakdown Voltage
(lc = 100 !LAde, IE = 0)
MMBT8598L
MMBT8599L
V(BR)CBO
60
80
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
Vde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
(lC = 100 mAde, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage(l)
(lC = 100 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage(l)
(lc = 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, IB = 5.0 mAde)
VBE(on)
MMBT8598L
MMBT8599L
-
-
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 5.0 Vde, f
Input Capacitance
(VBE = 0.5 Vde, IC
=
=
0, f
=
1.0 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
1.0 MHz)
(1) Pulse Test: Pulse WIdth
fr
100 MHz)
= 300 1'-8, Duty Cycle =
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-238
MAXIMUM RATINGS
Symbol
MMBTA05L
MMBTA06L
Unit
Collector-Emitter Voltage
Rating
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
500
mAde
Collector Current -
Continuous
MMBTAOSL
MMBTA06L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
ROJA
556
"C/W
Po
300
mW
2.4
mWf'C
RoJA
417
"CIW
TJ, Tstg
-55 to +150
"C
Total Device Dissipation FR-5 Board,'
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25"C
=
•
25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DRIVER TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSILICON
DEVICE MARKING
I MMBTA05L
= lH; MMBTA06L = lG
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
60
80
-
V(BR)EBO
4.0
-
Vdc
ICEO
-
0.1
pAdc
Unit
Off CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
MMBTA05L
MMBTA06L
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ICBO
MMBTA05L
MMBTA06L
-
Vdc
pAdc
-
0.1
0.1
100
100
-
ON CHARACTERISTICS
-
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vdc)
(lC = 100 mAde, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
-
0.25
Vde
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 1.0 Vde)
VBE(on)
-
1.2
Vde
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mA, VCE = 2.0 V, f = 100 MHz)
(1) Pulse Test: Pulse Width'" 300 p.S, Duty Cycle'" 2.0%.
(2) fy is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-239
MAXIMUM RATINGS
~ting.
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
10
Vde
IC
300
mAde
Collector Current -
Continuous
MMBTA13L
MMBTA14L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
Collector 3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
RIIJA
556
'CIW
Po
300
mW
2.4
mW/,C
RIIJA
417
'CIW
TJ, Tsta
-55 to +150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
•
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
,~' ~-@
Emitter 2
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DARLINGTON AMPLIFIER
TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPN SILICON
DEVICE MARKING
MMBTA13L
=
1M; MMBTA14L
= IN
ELECTRICAL CHARACTERISTICS (TA
Refer to 2N6426 for graphs.
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
-
Vde
100
nAde
100
nAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 /tAde, VBE = 0)
Collector Cutoff Cu rrent
(VCB = 30 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
-
ON CHARACTERISTlCS(1)
DC Current Gain
(lC = 10 mAde, VCE
(lc
=
hFE
=
100 mAde, VCE
5.0 Vde)
=
5.0 Vde)
MMBTA13L
MMBTA14L
5000
10,000
MMBTA13L
MMBTA14L
10,000
20,000
-
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 0.1 mAde)
VCE(sat)
-
1.5
Vde
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 5.0 Vde)
VBE
-
2.0
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 5.0 Vdc, f = 100 MHz)
(1) Pulse Test: Pulse Width .. 300 itS, Duty Cycle .. 2.0%.
(2) fr = Ihfel • ftest·
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-240
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
0c/w
Po
300
mW
2.4
mWrC
R8JA
417
0c/w
TJ, Tsta
-55 to +150
°c
Collector Current -
Continuous
MMBTA20L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
=
'.' ~()
3 Collector
2
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Emlner
GENERAL PURPOSE AMPLIFIER
*FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSIUCON
DEVICE MARKING
I MMBTA20L
= lC
Refer to MPS3904 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
4.0
-
'CBO
-
100
nAdc
hFE
40
400
-
VCE!sat)
-
0.25
Vdc
fr
125
-
MHz
Cobo
-
4.0
pF
-
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
= 10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vdc, f
Output Capacitance
(VCS = 10 Vdc, IE
= 0, f =
=
100 MHz)
100 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-241
•
MAXIMUM RATINGS
Symbol
MMBTA42L
MMBTA43L
Unit
VCEO
300
200
Vde
Collector-Base Voltage
VCBO
300
200
Vde
Emitter-Base Voltage
VEBO
6.0
Rating
Collector-Emitter Voltage
Collector Current -
Continuous
6.0
Vde
mAde
500
IC
MMBTA42L
MMBTA43L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Po
225
mW
1.8
mWrC
R6JA
556
'c/w
Po
300
mW
2.4
mWrC
R6JA
417
°C/W
TJ, Tsta
-55to +150
°C
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
=
Unit
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
HIGH VOLTAGE
TRANSISTORS
*FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSIUCON
DEVICE MARKING
I MMBTA42L
= 10; MMBTA43L = 1E
Refer to MPSA42 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(IC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 /LAde, IE = 0)
300
200
V(BR)CBO
MMBTA42L
MMBTA43L
Emitter-Base Breakdown Voltage
(IE = 100 /LAde, IC = 0)
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 160 Vde, IE = 0)
300
200
V(BR)EBO
ICBO
MMBTA42L
MMBTA43L
Emitter Cutoff Current
(VBE = 6.0 Vde, IC = 0)
(VBE = 4.0 Vde, IC = 0)
Vde
V(BR)CEO
MMBTA42L
MMBTA43L
lEBO
MMBTA42L
MMBTA43L
6.0
-
-
Vde
Vde
/LAde
-
-
0.1
0.1
/LAde
0.1
0.1
ON CHARACTERISTlCS(I)
DC Current Gain
(lC = 1.0 mAde, VCE
(lC = 10 mAde, VCE
(lc
= 30
mAde, VCE
hFE
-
= 10 Vde)
= 10 Vde)
Both Types
Both Types
25
40
-
=
MMBTA42L
MMBTA43L
40
-
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
40
VCE(sat)
MMBTA42L
MMBTA43L
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
-
VBE(sat)
Vde
-
0.5
0.5
0.9
Vde
50
-
MHz
-
3.0
4.0
SMALL-8IGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f
=
Ceb
1.0 MHz)
MMBTA42L
MMBTA43L
(1) Pulse Test: Pulse Width .. 300 p.S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-242
pF
MAXIMUM RATINGS
Symbol
MMBTA55L
MMBTA56L
Unit
Collector-Emitter Voltage
Rating
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
500
mAde
Collector Current -
Continuous
MMBTA55L
MMBTA56L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mW/"C
R8JA
556
"CIW
Po
300
mW
2.4
mW/"C
R8JA
417
"CIW
TJ, Tsta
-55 to +150
"C
Total Device Dissipation FR-5 Board,*
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'.' "-()
3 Collector
2
•
2 EmItter
DRIVER TRANSISTORS
PNPSILICON
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBTA55l = 2H; MMBTA56l = 2G
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
Collector Cutoff Current
(VCE = 60 Vde, IB = 0)
Collector Cutoff Current
(VCB = 60 Vde, iE = 0)
(VCB = 80 Vde, IE = 0)
Vde
V(BR)CEO
MMBTA55l
MMBTA56l
-
60
80
-
V(BR)EBO
4.0
-
Vde
ICEO
-
0.1
pAdc
-
0.1
0.1
ICBO
MMBTA55L
MMBTA56L
pAde
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 1.0 Vde)
VBE(on)
100
100
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 100 mAde, VCE = 1.0 Vde, f = 100 MHz)
(1) Pulse Test: Pulse Width .. 300 /LS, Duty Cycle .. 2.0%.
(2) fr is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-243
-
-
-
0.25
Vde
1.2
Vde
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
'C/W
Po
300
mW
2.4
mWrC
R8JA
417
'C/W
TJ, Tstg
-55to +150
'c
Rating
Collector Current -
Continuous
MMBTA63L
MMBTA64L
CASE 318·03. STYLE 6
SOT·23 (TO·236AB)
THERMAL CHARACTERISTICS
Collector 3
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
•
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~'~@
Emitter 1
DARLINGTON TRANSISTORS
'FR-5 = 1.0 x 0.75 x 0.062 in.
"'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNP SILICON
DEVICE MARKING
MMBTA63L
= 2U;
MMBTA64L
= 2V
Ref.r to MPSA75 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
-
Vde
100
nAde
100
nAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 !lAde)
Collector Cutoff Current
(VCB = 30 Vde)
ICBO
Emitter Cutoff Current
(VBE = 10 Vde)
lEBO
-
ON CHARACTERISTICS
DC Current Gain( 1)
(lC = 10 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
(lC = 100 mAde, VCE = 5.0 Vde)
(lC = 100 mAde, VCE = 5.0 Vde)
hFE
5,000
10,000
10,000
20,000
MMBTA63L
MMBTA64L
MMBTA63L
MMBTA64L
Collector-Emitter Saturation Voltage
(lC = 100 mAde,lB = 0.1 mAde)
VCE(sat)
Base-Emitter On Voltage
(lc = 100 mAde, VCE = 5.0 Vde)
VBE(on)
-
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 5.0 Vde, f
=
100 MHz)
(1) Pulse Test: Pulse Width", 300 ps, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-244
-
-
1.5
Vde
2.0
Vde
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
R9JA
556
"CIW
Po
300
mW
2.4
mWI"C
R9JA
417
"C/W
TJ, Tst!!
-55to +150
"C
Rating
Collector Current -
Continuous
MMBTA70L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ~~'2 Emitter
GENERAL PURPOSE TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSILICON
DEVICE MARKING
I MMBTA70L
=
2C
Refer to 2N5086 for graphs,
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
Emitter-Base Breakdown Voltage
(IE = 100 !'Ade, IC = 0)
V(BR)EBO
4.0
-
ICBO
-
100
nAde
hFE
40
400
-
VCE(sat)
-
0.25
Vde
fr
125
-
Cobo
-
4.0
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
Vdc
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
=
10 Vde)
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
SMALL·SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vdc, f
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
=
100 MHz)
100 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-245
MHz
pF
..
MAXIMUM RATINGS
Symbol
MMBTA92L
MMBTA93L
Collector-Emitter Voltage
Rating
VCEO
300
200
Vde
Collector-Base Voltage
VCBO
300
200
Vde
Emitter-Base Voltage
VEBO
5.0
Collector Current -
Continuous
Unit
5.0
Vde
500
IC
MMBTA92L
MMBTA93L
mAde
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
R8JA
556
'c/w
Po
300
mW
2.4
mWI'C
R8JA
417
'c/w
TJ, Tstll
-55 to +150
'c
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
•
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
'.' ~-©
2
2 Emitter
HIGH VOLTAGE
TRANSISTORS
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSIUCON
DEVICE MARKING
I MMBTA92L
= 20; MMBTA93L = 2E
ELECTRICAL CHARACTERISTICS
Refer to MPSA92 for graphs.
(TA
= 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CEO
V(BR)CBO
300
200
MMBTA92L
MMBTA93L
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 160 Vde, IE = 0)
300
200
MMBTA92L
MMBTA93L
V(BR)EBO
ICBO
MMBTA92L
MMBTA93L
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
5.0
-
-
Vde
Vde
Vde
pAde
0.25
0.25
0.1
pAde
ON CHARACTERIS11CS(11
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC
= 30 mAde, VCE =
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
hFE
Both Types
Both Types
25
40
-
MMBTA92L
MMBTA93L
25
25
-
VCE(sat)
VBE(sat)
-
tr
MMBTA92L
MMBTA93L
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
-
-
Vde
0.5
0.5
0.9
Vde
50
-
MHz
-
6.0
8.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
=
Ceb
1.0 MHz)
MMBTA92L
MMBTA93L
(1) Pulse Test: Pulse Width .. 300 p.S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-246
pF
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
R6JA
556
°CIW
Po
300
mW
2.4
mWf'C
Rating
MMBTH10L
CASE 318-03, STYLE 6
SOT-23 (TO-236ABj
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA = 25°C
Derate above 25°C
3 Collector
,~'
",{Q
•
2 Emitter
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
ReJA
TJ, Tstll
417
-55 to
+ 150
°CIW
°C
VHF/UHF TRANSISTOR
*FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSILICON
DEVICE MARKING
MMBTH10L = 3E
Refer to MPSH10 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
25
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
3.0
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
-
Vdc
Vdc
Vde
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VBE = 2.0 Vdc, IC = 0)
lEBO
-
100
nAdc
hFE
60
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 4.0 mAde, VCE
=
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 4.0 mAde, IB = 0.4 mAde)
0.5
Vdc
VBE
-
0.95
Vdc
tr
650
-
MHz
VCE(sat)
Base-Emitter On Voltage
(lC = 4.0 mAde, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
100 MHz)
Ccb
=
1.0 MHz)
Common-Base Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(lC = 4.0 mAde, VCB = 10 Vdc, f
Crb
rb'C c
=
31.8 MHz)
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-247
0.7
pF
0.65
pF
9.0
ps
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
50
mAdc
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
R8JA
417
0c/w
TJ, TstA
-55 to +150
°C
Colle~or-Emitter
Collector Current -
Continuous
MMBTH24L
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
•
Total Device Dissipation
Alumina Substrate,"" TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ~()'2 Emitter
VHF MIXER TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.062 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
NPNSIUCON
DEVICE MARKING
I MMBTH24L
= 3A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Typ
Max
Unit
-
Vdc
-
Vdc
-
Vdc
-
-
50
nAdc
tr
400
620
-
MHz
Ccb
-
0.25
0.45
pF
19
24
24
29
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc,lB = 0)
V(BR)CEO
30
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
4.0
ICBO
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 8.0 mAdc, VCE
= 10 Vdc)
SMALL-SIGNAL CHARACTERlS11CS
Current-Gain - Bandwidth Product(l)
(lC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, 'E = 0, f
Conversion Gain
(213 MHz to 45 MHz)
(lC = B.O mAde, VCC
(60 MHz to 45 MHz)
(Ie = B.O mAdc, VCC
=
1.0 MHz)
= 20 Vdc,
=
150 mVrms)
= 20 Vdc, Oscillator Injection =
150 mVrms)
Oscillator Injection
CG
dB
(1) Pulse Test: Pulse Width", 300 /AS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-248
-
• Designed for UHFNHF Amplifier Applications
• High Current Gain Bandwidth Product
tr = 2000 MHz Min @ 10 mA
MMBTH69L
MAXIMUM RATINGS
Rating
CASE 318-03, STYLE 6
SOT-23 (TO-236AB)
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Symbol
Max
Unit
Po
225
mW
1.B
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
R8JA
417
°CIW
TJ, Tstll
-55 to + 150
°C
,~' .:.~'-
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
..
2 Emitter
UHFNHF TRANSISTOR
PNP SILICON
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
MMBTH69L = 3J
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted. 1
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 01
V(BRICEO
15
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 01
V(BR)CBO
15
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 01
V(BRIEBO
4
-
-
Vdc
ICBO
-
-
100
nAdc
-
-
MHz
-
0.35
pF
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE
=
10 Vdc)
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vdc, f = 100 MHz)
IT
Collector-Base Capacitance
(VCE = 10 Vdc, IE = 0, f
Crb
=
2000
-
1.0 MHzl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-249
MAXIMUM RAnNGS
Symbol
Value
Unit
Collector-Emitter Voltage
VeEO
20
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Symbol
Max
Unit
Po
225
mW
1.8
rnwrc
R8JA
556
°CM!
Po
300
mW
2.4
mWrC
R8JA
417
"CMI
TJ, Tstg
-55to+150
°e
Rating
MMBTH81L
CASE 318-03, STYLE 6
SOT-23 (TO-236ABI
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 Collector
,~' .~-©
2 Emitter
UHFNHF TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
PNPSIUCON
DEVICE MARKING
I MMBTH81L = 3D
ELECTRICAL CHARACTERISTICS
(TA
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(Ie = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(Ie = 10 ,lAde, IE = 0)
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 10 ,lAdc, IC = 0)
V(BR)EBO
3.0
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
ICBO
-
Emitter Cutoff Current
(VBE = 2.0 Vde, IC = 0)
lEBO
-
Characteristic
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Vdc
Vdc
Vde
100
nAde
100
nAde
ON CHARACTERISTICS
DC Currant Gain
(Ie = 5.0 mAde, VCE
hFE
= 10 Vde)
60
Collector-Emitter Saturation Voltage
(lC = 5.0 mAde, IB = 0.6 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 6.0 mAde, VCE = 10 Vde)
VBE(on)
-
fy
600
-
-
-
0.5
Vde
0.9
Vde
-
MHz
0.85
pF
0.65
pF
SMALL-5IGNAL CHARACT£RlSTICS
Current-Gain - Bandwidth Product
(lC = 6.0 mAde, VCE = 10 Vde, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
= 100 MHz)
Ccb
= 1.0 MHz)
Collector-Emitter Capacitance
(lB = 0, VCB = 10 Vde, f = 1.0 MHz)
Cee
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-250
-
MMPQ2222, A
CASE 751B-03, STYLE 1
SO-16
MAXIMUM RATINGS
Rating
Symbol
VCEO
30
40
Vde
VCB
60
75
Vde
Emitter-Base Voltage
VEB
5.0
Vde
IC
500
mAde
Collector Current -
Continuous
Each
Four
Transistors
PIN CONNECTIONS
DIAGRAM
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Transistor
Equal Power
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Po
0.52
4.2
1.0
8.0
Watts
mWrC
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Po
0.8
6.4
2.4
19.2
Watts
mWrC
QUAD
GENERAL-PURPOSE
TRANSISTORS
°c
NPN SILICON
Operating and Storage Junction
Temperature Range
I
MMP02222 MMP
'" 0.2
o
o
20
500
V
a
400
j
co
---
4.0
::;: 300
~
E2
t---
6.0
-'"
80
10
IF. FORWARD CURRENT (rnA)
12
14
/
200
100
.-V
07
08
09
VF. FORWARD VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-263
/
1.0
MPN3700
FIGURE 3 -
DIODE CAPACITANCE
FIGURE 4 -
10
8.0
6.0
VR" 15VOLTS
1,
~ 40
~ 2.0
;:!
~1 0
5
TA
~
•
::
'"uw
O. 8
L
10
~
25°C
\
L
04
L
~
~
§ o. 6
a
LEAKAGE CURRENT
100
40
./
01
>
~ 004
0.4
~
.L
00 1
2
0004
00
000 1
·60
-10 -20 -30 -40 -50
VR, REVERSE VOLTAGE (VOLTS)
-20
+20
+60
+100
+140
TA, AMBIENT TEMPERATURE lOCI
FIGURE 5 - FORWARD SERIES RESISTANCE TEST METHOD
10 pF
500 II
Use a short length of wire to short the test circuit from pOInt
"A" to "6" Then connect the power supply providIng 10 mA
of bias current to the test circuit
HI o----------jl-(---(!_---"VVI.--.--0.
Boonton
Model 33A or B
C::JOUT
LoO
All measurements @ 100 MHz
I-=-
Adjust the capacitance scale arm of the brrdge and the "G"
zero control for a mlnrmum null on the "null meter" The
null occurs at approximately 130 pF
Power SupplV
for test fixture, leads should
be as short as possible
o·
To measure senes resistance, a 10 pF capacitor IS used to reduce
the forward capacitance of the Circuli and to prevent shorttng of
the external power supply through the bridge The small signal
from the bndge IS prevented from shortmg through the power
supply by the 500~ohm resistor The resistance of the 10 pF capacitor can be considered negligible for thiS measurement
4
Replace the wire short With the deVice to be'tested, Bras
the deVice to a forward conductance state of 10 mA
Obtain a minimum null on the "null meter", With the capacitance and conductance scale adjustment arms
6 Read conductance (G) direct from the scale Now read the
capacitance value from the scale (=130 pF) and subtract
120 pF which Yields capacitance (e) The forward resistance
(RS) can now be calculated from
2533 G
RS~---
C2
1 The RF Admittance Bridge (Boonton 33A or B) must be Inl~
tlally balanced, with the test CircUit connected to the bndge
test terminals The conductance scale will be set at zero
and the capacitance scale will be set at 120 pF, as required
when uSing the 100 MHz test cOIl
Where
G ~
In
mlcromhos,
C-
In
pF,
RS ~
In
ohms
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-264
MPQ2483
MPQ2484
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
50
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA = 25"<:(1)
Derate above 25"C
Po
Total Device Dissipation
@TC = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mWf'C
0.825
6.7
2.4
19.2
Watts
mWf'C
-55to +150
1
Each
Transistor
TJ, Tstg
CASE 646·06, STYLE 1
TO·116
•
QUAD
AMPLIFIER TRANSISTORS
"C
NPNSILICON
Refer to 2N2919 for graphs.
(1) Second Breakdown occurs at power levels greater than 3 tImes the power
dissipation rating.
THERMAL CHARACTERISTICS
Junction to
Characteristic
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
134
"CIW
"CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS
(TA
=
25"C unless otherwise noted.)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage(2)
(lc = 10 mAde, IB = 0)
V(BR)CEO
40
-
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
60
-
-
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
6.0
-
-
Vde
-
20
nAde
-
20
nAde
-
-
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
Vde
Vde
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 0.1 mAde, VCE
(lc
(lc
=
=
1.0 mAde, VCE
10 mAde, VCE
hFE
= 5.0 Vde)
MP02483
MP02484
100
200
= 5.0 Vde)
MP02483
MP02484
150
300
-
MP02483
MP02484
150
300
-
= 5.0 Vde)
Collector-Emitter Saturation Voltage
(lc = 1.0 mAde, IB = 0.1 mAde)
(IC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(2)
(lC = 100 pAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
VBE(sat)
-
-
-
-
Vde
0.13
0.15
0.35
0.5
0.58
0.70
0.7
0.8
Vde
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-265
-
-
MPQ2483, MPQ2484
ELECTRICAL CHARACTERISTICS (continued) (TA
I
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
tr
50
100
-
Cibo
-
4.0
8.0
pF
Ccb
-
1.8
6.0
pF
-
3.0
2.0
-
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 500 /LAde, VCE ~ 5.0 Vdc, f ~ 20 MHz)
Input Capacitance
(VBE ~ 0.5 Vdc, IC
•
~
0, f
~
MHz
1.0 MHz)
Collector-Base Capacitance
(VCB ~ 5.0 Vdc, IE ~ 0, f ~ 1.0 MHz)
Noise Figure
(lC ~ 10 /LAde, VCE ~ 5.0 Vdc, RS ~ 10 kohms,
f ~ 10 Hz to 15.7 kHz, BW ~ 10 kHz)
(2) Pulse Test: Pulse Width :s; 300 tJ.s, Duty Cycle
.s;:;;
NF
MPQ2483
MPQ2484
dB
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-266
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Collector Current -
Continuous
Total Device Dissipation
@ TA ~ 25°C(1)
Derate above 25°C
Po
Total Device Dissipation
Po
CASE 646-06, STYLE 1
TO-116
Each
Transistor
Four
Transistors
Equal Power
650
5.2
1500
12
mWrC
1.25
10
3.2
25.6
mWrC
@TC~25°C
Derate above 25Q C
Operating and Storage Junction
Temperature Range
MPQ3467
-55to +150
TJ, Tstg
1
mW
Watts
°c
(1) Second Breakdown occurs at power levels greater than 2 times the power
dissipation rating.
QUAD
MEMORY DRIVER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
R9JC
Junction to
Case
R9JA
Junction to
Ambient
Unit
Refer to MD3467 for graphs.
Thermal Resistance
Each Die
Effective, 4 Die
100
39
193
83.2
°CIW
°CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
45
5.0
55
10
%
%
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lc ~ 10 mAde, IB ~ 0)
V(BR)CEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 10 /lAde, IE ~ 0)
V(BR)CBO
40
-
Emitter-Base Breakdown Voltage
(IE ~ 10/lAde, IC ~ 0)
V(BR)EBO
5.0
-
-
OFF CHARACTERISTICS
Vdc
Vdc
Collector Cutoff Current
(VCB ~ 30 Vde, IE ~ 0)
ICBO
-
-
200
nAde
Emitter Cutoff Current
(VBE ~ 3.0 Vde, IC ~ 0)
lEBO
-
-
200
nAde
hFE
20
-
-
-
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 500 mAde, VCE
=
1.0 Vde)
Collector-Emitter Saturation Voltage(2)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
-
0.23
0.5
Vde
Base-Emitter Saturation Voltage(2)
(lc = 500 mAde, IB = 50 mAde)
VBE(sat)
-
0.90
1.2
Vde
fr
125
190
-
MHz
Cobo
-
10
25
pF
Cibo
-
55
80
pF
-
-
40
ns
-
90
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(lC = 500 mAde, IBI
=
50 mAde)
Turn-Off Time
(lC = 500 mAde, IB1
=
IB2
ton
toff
=
50 mAde)
(2) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-267
•
MPQ3725, A
MAXIMUM RATINGS
RatIng
Symbol
MPCl3726 MPCl3725A
Unit
Collector-Emitter Voltage
VCEO
40
50
Vdc
Collector-Emitter Voltage
VCES
60
70
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Collector Current -
Continuous
CASE 646-06, STYLE 1
TO-116
-
Four
Transistors
Equal
One
Transistor
Power
•
Total Device Dissipation
@TA=25'C
Derate above 25'C
1
Po
1.0
8.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
2.5
20
-55 to +150
Watts
mW/,C
'c
QUAD
CORE DRIVER TRANSISTORS
THERMAL CHARACTERISTICS
I Symbol
CharacteristIcs
Max
Unit
NPNSILICON
Effective
One
For Four
Transistor !TransIstors
Thermal Resistance,
Junction to Ambient(l)
I
R6JA
125
50
Refer to MD3725 for graphs.
'CIW
(1) R6JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Characteristic.
Min
Typ
40
50
-
-
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 100 pAdc, VBE = 0)
V(BR)CEO
MP03725
MP03725A
V(BR)CES
Vdc
60
70
-
V(BR)EBO
5.0
-
-
ICBO
-
-
0.5
MP03725
MP03725A
35
40
75
80
200
MP03725
MP03725A
25
30
45
50
-
MP03725
MP03725A
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
Vdc
Vdc
pAdc
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vdc)
(lc = 500 mAde, VCE = 2.0 Vdc)
hFE
-
-
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
-
0.32
0.45
Vdc
Base-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
0.8
0.9
1.0
Vdc
250
200
275
250
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, f = 100 MHz)
MP03725
MP03725A
tr
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cobo
-
5.1
10
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, f = 100 kHz)
Cibo
-
62
80
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-268
MPQ3725,A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25·C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
20
35
ns
50
60
ns
SWITCHING CHARACTERISTICS
Turn-On Time
(lC = 500 mAdc, 181
=
50 mAdc, V8E(off)
Turn-Off Time
(lC = 500 mAdc, 181
=
182
=
-
ton
= 3.8 Vdc)
toff
50 mAde)
(2) Pulse Test: Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
-3.8 V
+30 V
15
43
100
1.0~F
(----a To
1.0k
Sampling
Oscilloscope
Zin ~100
kn
tr <1.0 n$
Pulse Generator
t r • tf:SO;; 1.0 ns
PW:=:::::1.0115
2in ~ 50
n
Duty Cycle ~ 2 0%
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-269
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.5
Adc
Collector Current -
..
Continuous
Total Device Dissipation
@TA = 25·C
Derate above 25·C
Po
Total Device Dissipation
@TC = 25·C
Derate above 25·C
Po
Operating and Storage Junction
Temperature Range
MPQ3762
CASE 646-06, STYLE 1
TO-116
Each
Transistor
Four
Transistors
Equal Power
750
5.98
1700
13.6
mW
mWI"C
1.25
10
3.2
25.6
Watts
mWI"C
-55 to +150
TJ, Tstg
-1i¢i~!?11
1
·C
1234567
THERMAL CHARACTERISTICS
QUAD
MEMORY DRIVER TRANSISTORS
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance(l) Each Die
Effective, 4 Die
100
39
167
73.5
·CIW
·CIW
Coupling Factors
46
5.0
56
10
%
%
Characteristic
01-04 or 02-03
01-02 or 03-04
PNPSIUCON
Refer to MD3467 for graphs.
(1) ROJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
=
25·C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
5.0
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
-
-
35
30
20
70
65
35
-
-
0.3
0.6
0.55
0.9
0.9
1.0
1.25
1.4
275
-
9.0
15
pF
55
80
pF
50
ns
120
ns
-
Vde
-
Vde
-
Vde
100
nAde
100
nAde
ON CHARACTERISTlCS(2)
DC Current Gain
(lC = 150 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 2.0 Vde)
(lC = 1.0 Ade, VCE = 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Adc, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VBE(sat)
-
Vde
-
Vdc
SMALL-8IGNAL CHARACTERISTICS
fr
Current-Gain - Bandwidth Product(2)
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
Input Capacitance
(VEB = 0.5 Vde, IC = 0, f
=
Cobo
100 kHz)
Cibo
100 kHz)
150
-
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC
=
1.0 Ade, IBI = 100 mAdc, VBE(off)
Turn-Off Time
(VCC = 30 Vde, IC
=
1.0 Ade, IBI
=
IB2
=
= 2.0 Vde)
ton
toff
100 mAde)
-
(2) Pulse Test: Pulse Width", 300 1'£, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-270
-
MPQ3762
EQUIVALENT TEST CIRCUITS
FIGURE 1 - TURN-ON
+2_0 61f_~0
FIGURE 2 - TURN-OFF
-30 V
-30 V
30
Scope
Scope
100
100
-11.1 V
PW
= 200 ns
Rise TIme ~2.0 ns
DC ~2.0%
1N916
-=
+4.0 V
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-271
MAXIMUM RATINGS
Rating
MPQ3798
MP03799
Unit
VCEO
40
60
Vde
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Collector Current -
•
MPQ3798
MPQ3799
Symbol
Collector-Emitter Voltage
Continuous
Total Device Dissipation
@ TA = 25'C(1)
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
Vde
Each
Transistor
Four
Transistors
Equal Power
0.5
4.0
0.9
7.2
Watt
mWI"C
0.825
·6.7
2.4
19.2
Watts
ml"C
-55 to +150
TJ. Tstg
CASE 646-06, STYLE 1
TO-116
-1i¢i~&11
1
°c
(1) Second breakdown occurs at power levels greater than 3 times the power
dissipation rating.
1234567
QUAD
THERMAL CHARACTERISTICS
Characteristic
AMPLIFIER TRANSISTORS
RI/JC
Junction to
ease
RI/JA
Junction to
Ambient
Unit
PNPSIUCON
Thermal Resistance
Each Die
Effective. 4 Die
151
52
250
139
0c/w
0c/w
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS (TA
Refer to 2N3810 for graphs.
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde. IB = 0)
V(BR)CEO
MP03798
MP03799
40
60
Collector-Base Breakdown Voltage
(lC = 10 /lAde. IE = 0)
V(BR)CBO
60
Emitter-Base Breakdown Voltage
(IE = 10 /lAde. IC = 0)
V(BR)EBO
5.0
Collector Cutoff Cu rrent
(VCB = 50 Vde. IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vde. IC = 0)
lEBO
-
Vde
Vde
Vde
10
nAde
20
nAde
-
-
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 /lAde. VCE
hFE
= 5.0 Vde)
MP03798
MP03799
100
225
-
-
(lC
=
= 5.0 Vde)
MP03798
MP03799
150
300
(lC
= 500 /lAde. VCE = 5.0 Vde)
MP03798
MP03799
150
300
-
(lC
= 10 mAde. VCE = 5.0 Vde)
MP03798
MP03799
125
250
-
100 /lAde. VCE
Collector-Emitter Saturation Voltage
(lC = 100 /lAde. IB = 10 /lAde)
(lC = 1.0 mAde. IB = 100 /lAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 100 /lAde. IS = 10 /lAde)
(lC = 1.0 mAde. IS = 100 /lAde)
VBE(sat)
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-272
-
-
Vde
0.12
0.07
0.2
0.25
0.62
0.68
0.7
0.8
Vde
MPQ3798, MP03799
ELECTRICAL CHARACTERISTICS (continued) (TA
= 2S"C unless otherwise noted.)
I
Characteristic
Max
Unit
Symbol
Min
Typ
t,-
60
250
-
Cobo
-
2.1
4.0
pF
Cibo
-
5.5
B.O
pF
-
2.5
1.5
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vdc, f
=
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VSE = 0.5 Vdc, IC
= 0, f =
100 kHz)
Noise Figure
(lC = 100 !
~o
1. 0
"'to
O.B
V~E{sat)
o
>
0.6
VBE@VCE~1.0V
~
~
:>
~
/
@Ic/IB ~ 10
(-550C to 125oC)
~
B
w
'"=>
1111111
II 1111
O. 2
o
1.0
2.0
5.0
10
,.~
.-
VCE(sa')@ IcllB ~ 10
20
50
100
i-'
IlJ./1
u
~
-O.B
V
I-
0.4
0.5
+0.8
.5
'1111
(25°C to 150°C)
200
-
-1.6
~
~ -2.4
500
Ic. COLLECTOR CURRENT (mA)
0.5
1.0
I[IVB for ,BE
i-
2.0
5.0
10
20
50
III
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-278
100
200
500
MPQ6001, MPQ6002, MPQ6501, MPQ6502
NOISE FIGURE
(VCE = 10 Vdc. T A = 25°C)
FIGURE 4 - FREQUENCY EFFECTS
FIGURE 5 - SOURCE RESISTANCE EFFECTS
6.0
10
i\..
5.0
4.0
~
IC = 10"A
RS. 4.3 kn
6.0
II
4.0
r-.
r--....
....... ,...
0.1
0.5
1.0
1.0
5.0
10
f. FREQUENCY (kHz)
10
II
50
j
V
/
I~
\
IC= 100~
RS= LOki)
1. 0
0.1
11'11
100~ j
IC = LOrnA
1\
1.0
o
I
= 1.0 kHz
\..
8.0
1"- ....
3.0
f
0
"
Y11
;~U
/
I
......
l;-
I"""
o
100
0.1
0.1
0.5
1.0
1.0
5.0
10
10
RS. SO URCE RESISTANCE (k OHMS)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-279
50
100
•
MAXIMUM RATINGS
Symbol
MP06100
MPQ6600
MPQ6100A
MP06600A
Unit
Collector-Emitter Voltage
VCEO
40
45
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA= 25"C
Derate above 25'C
PD
Total Device Dissipation
@TC = 25'C
Derate above 25'C
PD
Operating and Storage Junction
Temperature Range
MPQ6100, A
STYLE 1
MPQ6600, A
STYLE 2
CASE 646-06
TO-116
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mWrC
0.825
6.7
2.4
19.2
Watts
mWrC
-55 to +150
TJ, Tstg
-
.
I~~&il
'c
1234567
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance(1) Each Die
Effective,
Coupling Factors
Junction to
Case
Junction to
Ambient
151
52
250
139
'C/W
34
70
26
%
%
4 Die
01-04 or 02-03
01-02 or 03-04
2.0
QUAD COMPLEMENTARY PAIR
TRANSISTORS
Unit
NPNIPNP SILICON
Refer to MH02483 for NPN Curves.
'c/w
Refer to MH03798 for PNP Curves.
(1) R8JA is measured \(Vith the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
40
45
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
MP06100,6600
MPQ6100A.6600A
-
Vdc
-
Vdc
-
10
nAdc
-
-
-
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
60
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
ICBO
-
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
Vdc
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 100 pAde, VCE = 5.0 Vdc)
hFE
MP061 00,6600
MP06100A,6600A
50
100
(lc = 500 pAdc, VCE = 5.0 Vdc)
MP06100,6600
MP06100A.6600A
(lc = 1.0 mAde, VCE = 5.0 Vdc)
(lC = 10 mAde, VCE = 5.0 Vdc)
-
-
-
75
150
-
MP061 00,6600
MP06100A.6600A
75
150
-
MP06100,6600
MP06100A,6600A
60
125
-
-
-
-
0.25
Vdc
-
-
Collector-Emitter Saturation Voltage
(lc = 1.0 mAde, IB = 100 pAdc)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lC = 1.0 mAde, IB = 100 pAdc)
VBE(sat)
-
-
0.8
Vdc
50
-
-
MHz
-
1.2
1.8
4.0
4.0
SMALL-8IGNAL CHARACTERISTICS
fy
Current-Gain - Bandwidth Product
(lC = 500 pAdc, VCE = 5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 100 kHz)
Cobo
PNP
NPN
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-280
pF
MPQ6100, A, MPQ6600, A
ELECTRICAL CHARACTERISTICS
(continued) (TA
=
25"C unless otherwise noted.)
Symbol
Charactaristlc
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, f = 100 kHz)
Cibo
PNP
NPN
NF
Noise Figure
(lC = 100 ,.Adc, VCE = 5.0 Vdc, RS = 10 kohms.
f = 10 Hz to 15.7 kHz. BW = 10 kHz)
Min
Typ
-
-
Max
Unit
pF
-
8.0
8.0
4.0
-
dB
(2) Pulse Test: Pulse Width", 300 !'S. Duty Cycle'" 2.0%.
..
MOTOROLA SMALL-SIGNAL TRANS)STORS, FETs AND DIODES
2-281
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MP06426
MP06427
VCEO
Collector-Base Voltage
VCBO
Value
MPQ6426
MPQ6427
Unit
Vdc
30
40
CASE 646-06, STYLE 1
TO-116
Vdc
MP06426
MP06427
40
50
Emitter-Base Voltage
Collector Current - Continuous
VEBO
12
Vdc
IC
500
mAde
Each Die
Total Device Dissipation
@TA= 25'C(11
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
-
Four Die
Equal Power
1
500
4.0
900
7.2
mW
mWrC
825
6.7
2400
19.2
mW
mWrC
·C
-55to+150
TJ, Tstg
QUAD
DARLINGTON TRANSISTORS
(11 Second Breakdown occurs at power levels greater than 3 times the power
dissipation rating.
NPNSIUCON
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
'CIW
'CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted. I
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(21
(lC = 10 mAde, IB = 01
Vdc
V(BRICEO
30
40
-
40
50
-
V(BRIEBO
12
-
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 01
ICBO
-
100
nAdc
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 01
lEBO
-
100
nAdc
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 01
MP06426
MP06427
Vdc
V(BRICBO
MP06426
MP06427
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 01
ON CHARACTERlS11CS(2)
DC Current Gain
(lC = 10 mAde, VCE = 5.0 Vdcl
(lC = 100 mAde, VCE = 5.0 Vdcl
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAdc,lB = 0.1 mAdel
VCE(satl
Base-Emitter On Voltage
(lc = 100 mAde, VCE = 5.0 Vdcl
VBE(onl
5000
10,000
-
-
-
1.5
Vdc
2.0
Vdc
-
MHz
8.0
pF
15
pF
SMALL-8IGNAL CHARACTERlSTlCS
for
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHzl
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHzl
Cobo
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 100 kHzl
Cibo
125
-
(21 Pulse Teat: Pulse Width .. 300 JIS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-282
MPQ6426, MPQ6427
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, T A = 25°C)
FIGURE 2 - NOISE CURRENT
FIGURE 1 - NOISE VOLTAGE
2. 0
50 0
BANDWIDTH" 1.0 Hz
RS ~ 0
20 O~
0
7
O. 5
~
>-
~
10pA
-
.........
0
~
0
~
Ie'" 1.0 rnA
5. 0
10
20
50
100 200
500 10k 2.0k 50k 10k 20k
IC" ,',ii~A
1111
03
02
B
100p.A
IIIII
,r--I-
tOpA
IIII
0.0 3
00 2
10
SOk WOk
1111
20
50
100 200
500 1.0k 2.0k
f. FREQUENCY 'HzJ
f. FREQUENCY 'HzJ
FIGURE 3 - TOTAL WIDEBAND NOISE VOLTAGE
200
~
w
I I II IIII
~
0
70 I-'C"lO.A
w
50
>
~
0
z
0
z
-
11
\OO~A
1 I
30 I-- I-
~
§:
20
~ 80
./
~
11
f.~ l~.O
>-
'\.
~
200
100.A
\..
.......
4.0 -IC~O~AL
~.
500 1000
./
..........
2.0
5.0
10
20
50
100
RS. SOURCE RESISTANCE ,HlJ
B~JDW'~~H" 10 ~z ,; ,; 7Ik~~
I\"
6.0
I
I
HI
2.0
\.
tOpA
u:
/
'\.
\.
10
10mA
~
«
:;
50k WOk
I I I II L
111111
\.
2
V~
100
'"«':;
5.0k 10k 20k
FIGURE 4 - WIDEBAND NOISE FIGURE
14
BANDWIDTH = 10 Hz TO 157kHz
VI
1/
1111
IDOpA
0.0 7
0.0 5
1Trtt--
0
V
BANDWIDTH -10Hz
'"
0
I111
0
1.0
I
I
20
5.0
20
10
50
100
200
RS. SOURCE RESISTANCE ,k!2J
500 1000
DYNAMIC CHARACTERISTICS
FIGURE 5 - CAPACITANCE
20
w
u
z
«
>U
IIII
-
10
-
FIGURE 6 - HIGH FREQUENCY CURRENT GAIN
4.0
VCE"5.0V
f'" 100 MHz
z
'iJ': i5 C
~
0
7.0
Cob
I
~
I---
5.0
~
Cob
~oS
'j"
«
J'--..
iii
3.0
TJ= 25°C
,./
2.0
i'j\.
'/
10
O.B
0.6
0.4
-
2.0
004
01
0.2
0.4
1.0
2.0
4.0
VR. REVERSE VOLTAGE ,VOLTSJ
10
20
40
02
0.5
1.0
20
0.5
10
20
50
100
Ie. COLLECTOR CURRENT 'mAJ
MOTOROLA SMAll-SIGNAL TRANSISTORS, FETs AND DIODES
2-283
200
~OO
•
MPQ6501, MPQ6502 For Specifications, See MPQ6001 Data r - - - - - - - - - - - - - ,
MPQ6600,A
For Specifications, See MPQ6100,A Data.
MPQ6700
MAXIMUM RATINGS
Symbol
Valua
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAdc
Collector Current -
Continuous
Total Device Dissipation
@ TA = 25'C(1)
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mW/,C
825
6.7
2400
19.2
mW
mW/,C
-55 to +150
TJ, Tstg
CASE 646-06, STYLE 1
TO-116
1
14
13
12
11
10
9
8
234567
QUAD
COMPLEMENTARY PAIR
TRANSISTORS
'c
(1) Second breakdown occurs at power levels greater than 3 times the power
dissipation rating.
NPN/PNP SILICON
THERMAL CHARACTERISTICS
Junction to
Characteristic
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
'CIW
'CIW
Coupling Factors
Q1-Q4 or Q2-Q3
Q1-Q2 or Q3-Q4
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 !lAdc, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10 !lAdc, IC = 0)
V(BR)EBO
5.0
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
-
-
Vdc
Vdc
Vdc
50
nAde
50
nAdc
ON CHARACTERISTlCS(2)
DC Current Gain
(lC = 0.1 mAdc, VCE = 1.0 Vde)
(lc = 1.0 mAdc, VCE = 1.0 Vdc)
(lC = 10 mAdc, VCE = 1.0 Vdc)
hFE
30
50
70
Collector-Emitter Saturation Voltage
(lC = 10 mAdc, IB = 1.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
-
tr
-
-
0.25
Vdc
0.9
Vdc
200
-
MHz
-
4.5
pF
-
10
8.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 100 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
= 0, f
Cobo
Cibo
= 100 kHz)
PNP
NPN
pF
-
(2) Pulse Test: Pulse Width .. 300 /J-S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-284
MPQ6700
NPN
PNP
FIGURE 1 - DC CURRENT GAIN
500
500
3D0
TJ-1 1250
-
200
z
~
5
~
u
c
~
1=:0'1='
100
-
70
-
50
0
J
",
--
I:::'r0
-
0
0
0
1.0
I-
p...,joo:
~~
,
- - - VCE·I.OV \
- - - VCE'5.0V
25 DC
-55°C
I~
10
7.0
5.0
0.2
7.0
0.5
---
+-
""'l"
--VCE'I.oV"\
---VCE'5,oV
-55°C
0
5. 0
0.2
iQ..
200..,.
....
~
25°C
TJ'125oC
3D0
2.0
5.0
10
20
50
100
200
0.4
1.0
IC, COLLECTOR CURRENT ImAI
2.0
4.0
10
20
40
100
200
IC, COLLECTOR CURRENT ImAI
FIGURE 2 - "ON" VOLTAGE
1. 0
TJ= 25°C
Jmll@IC)IB.1IJ
IlTlit
-~
o. B
in
::;
o
~
VBElonl@ VCIE
10
~
o
>
.l.olv
O. 6i""""
06 ==V:IOOI@VCE' 1.0 V
'"'"
04
~>
0.4
>'
/
2
10
20
50
IIII
I
10
20
/
02
VCElsatl@ ICIIB' 10
05
I-
~
~
w
,;
0
0.2
l---
II 1111
OB
VBEI"tl@ Iclla - 10
w
'"~
./
TJ' 25°C 1111
/
I
VCElsatl@IC 16 - 10
o
I
50
100
200
0.2
I
04
10
2.0
40
10
20
40
100
IC, COLLECTOR CURRENT ImAI
IC, COLLECTOR CURRENT ImAI
FIGURE 3 - TEMPERATURE COEFFICIENTS
+2.0
G
S
~
+2 0
"APPLIES fOR IC/IB"hfE/2o
">
+1.0
u
II
1111
II
1111
1111111
1111111
2i~
*uVC for VCE(sat)
~
-1.0
~
-20
-3~
0.2
125°C to 125°C
fffifI
~~
III~
--
25°C to ~250C
0VB FOR VBE
0
- m o : l t o c-
TI III
II III
05
1.0
111111
II
0
fJVB for VBE
i
2.0
5.0
10
20
1111111
50
100
ITIITI
1111
0
210b;~
HI
~
::>
II
1111
"ave FOR VCElsatl
-55°C to 25°C .....
8
~
0
"APPLIES FOR ICIIB"hFE/2.0
-3. 0
200
02
II 1111
0.5
1.0
20
5.0
10
20
IC, COLLECTOR CURRENT ImAI
Ie, COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-285
-550C to 250C
111111
rl 1111100
50
200
•
MPQ6700
PNP
NPN
FIGURE 4 - COLLECTOR SATURATION REGION
~o
1.0
w
O. 8
~
'"~
o
>
'"w
O.6
I II
lOrnA
SOmA
•
'"
i
~
~
0.8
TJ= 25°C
~o
100 rnA
~
Ic:1.0mA
lOrnA
O.4
ul
0
0.01 0.02
>
1\
0.4
t;
1\
~.
O.2
'-'
~~
1\
0.05 0.1
I'-
8
r-
>
~
0.2
0.5
1.0
2.0
5.0
10
20
50
100
100 rnA
SOmA
0.6
~
~
~
1.0
~
TJ: 25°C
Ic:1.0mA
;;;
02
:---
0
0005 001 0.02
r-
:--0.05 01
0.2
0.5 1.0 2.0
IB, BASE CURRENT (rnA)
IB, BASE CURRENT (rnA)
5.0
10
20
50
FIGURE 5 - TURN-ON TIME
500
500
IC/~~: ~~oc -
30
O="
200 .........
200 t-- ~
........
0
...... ......
...... .::::-..
......
.........
0
0
7. 0
5. 0
2.0
,.
~
......
VBE(Off):~
3.0
5.0 7.0
10
20
tr@VCC-3.~ " -
;::
'\~ ~
lOrv-
30
50
70
100
100
70
50
10
70
50
2.0
200
.....
......
.......
30
20
t,@VCC:40V
r-...
................
100
0
0
ICIIB: 10
TJ: 25°C
300
.......
.........
~
T,@VCC:3.0V
t--.
:--....
11 I I
2.0 V
td@VBE(offl:O
3.0
50 70
10
20
30
50
70
100
200
IC, COLLECTOR eURRENT (rnA)
IC, COLLECTOR CURRENT (rnA)
FIGURE 6 - TURN-OFF TIME
500
500
t's=ts= 1/8tf-
300
200
]:
w
'"'
;::
......
......
I'.
1'1
100
70
0
200
1-
lellB-l0
ICilB-~
II@ IcllB -
0
3.0
5.0 7.0
10
W'"
20
50
le/iB:201-
"
0
70
100
200
0
7. 0
5.0
2.0
....:;;:
IcilB:l0
IcIIB: 20
tl@ICilB:lO
'"
3.0
5.0 7.0
10
20
30
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs.AND DIODES
2-286
'"
.....
50
Ie, COLLECTOR CURRENT (rnA)
Ir" COLLECTOR CURRENT (rnA)
-1/8tf
. /B)1 ['!B2
I-'-
0
I""-
30
w
0
0
;::
.....
.....
"
Is"" Is
Vee: 40 V
i'
10 0
20
0
0
7. 0
5.0
2.0
300"",-
VCC:3.0V IB1: IB2 _
TJ:250e
70
100
200
MPQ6700
NPN
PNP
FIGURE 7 - CURRENT-GAIN - BANDWIDTH PRODUCT
~ 500
~
_I
~
0
T~ = ~5~cll 1
r-
VCE = 20 V
0 - f=100MH,
~ 30
i":
Q
V
V
200
"'"
i!l
~ 150
,
~
~
~
70
500.3
--
-
.......
"
1/
0
0.5
./
f-'
0
100
B
.f
f" 100 MHz
0
l/V
z
TJ'" 250 C
VCE = 20 V
Ot--
0.7
1.0
2.0
3.0
5.0
70
10
20
V
05 07
30
20
10
fC. COLLECTOR CURRENT (mA)
30
50 70
10
20
30
IC. COLLECTOR CURRENT (mAl
FIGURE 8 - CAPACITANCE
0
5. 0
~
~
z
30
«
10
r--
TJ
I"-
r- t-
=1250~
~
t:;
2.O
"-
1. 5
C:b
0
I"-
~
1. 0
O. 7
0.06
"<:::
0
C,b
>-
~
TJ = 25 0C
r-
0
0.1
0.2
0.4 0.6
1.0
2.0
4.0 60
10
Cob
20
40 60
VR. REVERSE VOLTAGE (VOLTS)
1. 0
0.04
""- I"0.1
02
04
10
20
40
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-287
10
20
40
•
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
200
mAde
Collector-Emitter Voltage
Collector Current -
Continuous
Total Device Dissipation
@TA = 25'C(1)
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
CASE 646-06, STYLE 1
TO-116
Each
Transistor
Four
Transistors
Equal Power
500
4.0
900
7.2
mW
mWI'C
825
6.7
2400
19.2
mW
mWI'C
-55to +150
TJ, Tstg
MPQ6842
1
14
13
12
l'
10
9
8
'c
234567
(1) Second Breakdown occurs at power levels greater than 3 times the power
dissipation rating.
QUAD
COMPLEMENTARY PAIR
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
NPNIPNP SILICON
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
'CIW
'CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
34
2.0
70
26
%
%
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collactor-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
=
(lC
(IE
(lC
=
=
=
10 mAde, IB
10 !lAde, IC
20 Vdc, IE
= 3.0 Vdc,
(VEB
=
0)
= 0)
= 0)
10 !lAde, IE
IC
= 0)
= 0)
"l!!RjCEO
30
-
V(BR)CBO
30
-
V(BR)EBO
4.0
ICBO
lEBO
-
-
-
Vdc
-
Vdc
-
Vdc
50
nAdc
-
50
nAdc
-
-
ON CHARACTERISTICS(2)
= 0.5 mAde, VCE = 1.0 Vdc)
= 1.0 mAde, VCE = 1.0 Vdc)
= 10 mAde, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage (lC = 0.5 mAde, IB = 0.05
DC Current Gain
(lC
(lc
(lC
hFE
30
50
70
-
-
-
VBE(sat)
-
IT
200
350
-
MHz
Cobo
-
3.0
4.5
pF
-
5.0
4.0
10
8.0
tPLH
tpHL
-
15
6.0
25
15
Rise Time
(0.3 V to 4.7 V, TP3 or TP4)
tr
5.0
25
,35
ns
Fall Time
(4.7 V to 0.3 V, TP3 or TP4)
tf
5.0
10
20
ns
mAde,
VCE(sat)
O'C .. T .. 70'C)
Base-Emitter Saturation Voltage
(lC
=
0.5 mAde, IB
= 0.05
mAde)
0.05
0.15
Vdc
0.65
0.9
Vdc
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
100 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
= 0, f =
100 kHz)
Cibo
SWITCHING CHARACTERISTICS (TA
PNP
NPN
pF
-
= 25'C, VCC = 5.0 Vde)
Propagation Delay Time
(50% Points TP1 to TP3)
(50% Points TP2 to TP4)
(2) Pulse Test: Pulse Width .. 300 /JoS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-288
ns
MPQ6842
I
NPN
PNP
FIGURE 1 - DC CURRENT GAIN
SO0
so0
300
300
TJ
z
~ 100
~ 70
~ S0
=>
'-'
'-'
i"
J
-",--
TJ= 112S 0
200
-
~
-
-
0
~
25°C
2001-
,""t"
b0
-
-SSoC
0
0
I~.
-
::-:t~
I-
2SoC
-SSoC
0
~~
0
12Soc
f.l- I-
1,\
--VCE=I.0V"\
---VCE=S.OV
0
7. 0
S. 0
02
O.S
1.0
2.0
S.O
10
so
20
100
- - - VCE = 1 0 V " \
- - - VCE=S.OV
0
7.0
S.0
0.2
200
0.4
1.0
IC, COLLECTOR CURRENT ImA}
2.0
4.0
10
20
40
100
200
IC, COLLECTOR CURRENT ImA}
•
FIGURE 2 - "ON" VOL TAGE
10
J~~III )@ IcllB =1101
TJ = 25°C
IWn'
O.B
~
c
~
0.6
w
-
-~
VBElon}@ VdE
10
~
os
.l.olv
~
~
«
"'
~
>::;
c
~
II 1111
VBEI"t}@ ICIIB - 10
6~lon}@Vi~=1.0V
w
'"«
>
>'
O.
./
TJ=150i; 1111
0.4
I
04
7
>
>'
/
0.2
o
02
VCEI,,'}@ ICIIS - 10
o
I I
0.5
1.0
2.0
S.O
10
20
I
O. 1
VCElsa'}@ IC/IS = 10
50
100
200
0.2
1.0
0.4
2.0
4.0
10
10
100
40
IC, COLLECTOR CURRENT ImA)
IC, COLLECTOR CURRENT ImA}
FIGURE 3 - TEMPERATURE COEFFICIENTS
~
~zE
~".~
::
+1.0 r--J"'T'TT'1-rrr-,-...,-rnCTTT,--.-,-""rrr--,
"APPLIES FOR IC/IS'; hFE/2 0
I 111111
+1.0
1111
Ii iii
+2. 0
G
! ! II!!!!
i
L ~
U
~
~-bH+IHIIII~I-+~+r~~-+-+1~Ol'C10:1M~
*evCforVCE(sat)
i
+1.0
"APPLIES FOR ICIIB .;hFE/1 0
II
1111
II
1111
i250C to 1250C
ffFf!i
'OVC FO R VCEI,,'}
0
1_5(O~~
w
-
~
~
111111
111111
-1.0
~
~ -2. 0
>-
~
-3. 0
0.1
I- ~50Ct0250C
'vs FOR VSE
TI IIII
II 1111
0.5
10
III~
25°C to :2ZOC
2.0
S.o
10
20
mm
111111
100
so
100
Ic, COLLECTOR CURRENT ImA}
IC, COLLECTOR CURRENT ImA}
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-289
/
MPQ6842
NPN
PNP
FIGURE 4 - COLLECTOR SATURATION REGION
1.0.
Ic=1.DmA
10. rnA
50. rnA
a
~
~
o
TIIDmA
D.2
1\
....
0.
0..0.1 0..0.2
0..2
Ic=1.DmA
D.6
ala:
O.4
o
~
8 o. 2
i'
0..0.5 0..1
~
0..5
to.
>
2.0.
5.0.
10.
20.
TJ=250C
o. 8
ffi
::
D.4
1.0.
o
TJ = 25°C
D.B
D.6
~
II II
50.
10.0.
10. rnA
50. rnA
10.0. rnA
r\
\
1\
.....
0.
0..005 0..0.1 0.02
0.05 0..1
lB. BASE CURRENT (rnA)
.....
0.2
0..5
1.0.
2.0.
5.0
10.
20
IS. BASE CURRENT (rnA)
FIGURE 5 - SWITCHING TIMES TEST CIRCUIT AND WAVEFORMS
22
'/4 MC300, 174HOSI
....-...---(0)
TP3
NOTES:
,. Unless otherwise noted, all resistors
I'60 P F
-=
carbon composition % W ±5%, all
capacitors dipped mica ±2%.
2. Use short interconnect wiring with
good power and ground busses.
3. TP1 thru TP4 are coaxial connectors to
accept scope probe tip and provide a
Pulse
Generator
Oto 5 V
t,.tf ~ 2 ns
PW ~ 200 ns
Period"tl 1000 ns
good ground.
4. Device under test is MPQ6842.
5. 160 pF load does not include stray
-=
Vee
51
or scope probe capacitance.
6. Scope probe resistance> 5 kn.
Scope probe capacitance < 10 pF.
-=
'/4 MC3000
(74HOOI
22
. .-
...---fCt)TP4
I
'0
'4
-=
'60PF
-=
TP3 or TP4
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-290
50.
MAXIMUM RATINGS
Rating
Symbol MPQ7041 MPQ7042 MPQ7043
MPQ7041
thru
MPQ7043
Unit
Collector-Emitter Voltage
VCEO
150
200
250
Vdc
Collector-Base Voltage
VCBO
150
200
250
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Collector Current -
Continuous
Total Device Dissipation
@TA= 25'C
Derate above 25'C
Po
Total Device Dissipation
@TC = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
CASE 646-06, STYLE 1
TO-116
Each
Ole
Four Die
Equal Power
750
5.98
1700
13.6
mW
mWI'C
1.25
10
3.2
25.6
Watts
mWI'C
-55 to + 150
TJ, Tstg
-11¢i~~1 ..
1
'c
THERMAL CHARACTERISTICS
Characteristic
1234567
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
'CIW
'CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
46
5.0
56
10
%
%
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
I
QUAD
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to MP07051 for graphs.
Symbol
Min
Typ
Max
150
200
250
-
-
5.0
-
-
-
-
100
100
100
25
40
40
45
60
80
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CEO
MP07041
MP07042
MPQ7043
V(BR)CBO
MPQ7041
MPQ7042
MP07043
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 150 Vdc, IE = 0)
(VeB = 180 Vdc, IE = 0)
150
200
250
V(BR)EBO
ICBO
MPQ7041
MP07042
MP07043
-
Vdc
-
Vdc
Vdc
nAdc
ON CHARACTlERISTlCS
DC Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc)
(lC = 10 mAdc, VCE = 10 Vdc)
(lC = 30 mAdc, VCE = 10 Vdc)
hFE
-
Collector-Emitter Saturation Voltage
(lC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
-
0.3
0.5
Vdc
Base-Emitter Saturation Voltage
(lC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
-
0.7
0.9
Vdc
fr
50
80
-
MHz
Output Capacitance
(VCB = 20 Vdc, Ie = 0, f = 1.0 MHz)
Cobo
-
2.5
5.0
pF
Input Capacitance
(VeB = 3.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
-
40
50
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, Vce = 20 Vdc, f = 100 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-291
/
MAXIMUM RATINGS
Symbol MP07091 MPQ7092 MP07093
Rating
Collector-Emitter Voltage
VCEO
150
200
250
Collector-Base Voltage
VCBO
150
~OO
250
Emitter-Base Voltage
VEBO
Collector Current -
•
Continuous
IC
Total Device Dissipation
@TA= 25·C
Derate above 25·C
Po
Total Device Dissipation
@TC = 25·C
Derate above 25·C
Po
Operating and Storage Junction
Temperature Range
Vdc
Vdc
5.0
Vd.
500
mAde
CASE 646-06, STYLE 1
TO-116
Each
Dia
Four Die
Equal Power
750
5.98
1700
13.6
mW
mWI"C
1.25
10
3.2
25.6
Watts
mWI"C
-, 1i¢i~&!1
·C
-55 to +150
TJ, Tstg
MPQ7091
thru
MPQ7093
Unit
THERMAL CHARACTERISTICS
1234567
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100
39
167
73.5
·CIW
·CIW
Coupling Factors
01-04 or 02-03
01-02 or 03-04
46
5.0
56
10
%
%
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
I
QUAD
AMPLIFIER TRANSISTORS
PNPSILICON
Refar to MP07051 for graphs.
Symbol
Min
Typ
150
200
250
-
-
-
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
MPQ70S1
MPQ70S2
MPQ7093
Collector-Base Breakdown Voltage
(lc = 100 pAdc, IE = 0)
V(BR)CBO
MPQ7091
MP07092
MPQ7093
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
Vdc
-
-
5.0
-
-
-
-
-
250
250
250
-
-
100
25
35
25
40
55
50
VCE(sat)
-
0.3
0.5
Vdc
VBElsatl
-
0.7
0.9
Vdc
fr
50
70
-
MHz
ICBO
MPQ7091
MP07092
MP07093
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
-
150
200
250
V(BR)EBO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 150 Vdc, IE = 0)
(VCB = 180 Vdc, IE = 0)
Vdc
lEBO
-
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vdc)
(lC = 10 mAde, VCE = 10 Vdc)
(lC = 30 mAde, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
hFE
(lC = 20 mAde, IB = 2.0 mAde)
(lC = 20 mAde, IB = 2.0 mAde)
-
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Cobo
-
3.0
5.0
pF
Input Capacitance
(VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
-
60
75
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-292
MPS536
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
3 Collector
"~~
MAXIMUM RATINGS
Rating
Symbol
MPS536
Unit
Collector-Emitter Voltage
VCEO
10
Vdc
Collector-Base Voltage
VCBO
15
Vdc
Emitter-Base Voltage
VEBO
4.5
Vdc
Continuous
IC
30
mA
~
Po
625
5.0
mW
mwrc
Tsta
-65 to +150
°c
Collector Current -
Power Dissipation @ T A
Derate above 25°C
25°C
Storage Temperature
•
2 Emitter
HIGH FREQUENCY
TRANSISTOR
PNPSILICON
*Free air
I
ELECTRICAL CHARACTERISTICS fTC ~ 25°C
"For both package types unless otherwise noted.)
I
Characteristic
Symbol
I
Min
I
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (lC
Collector-Base Breakdown Voltage (lC
Emitter-Base Breakdown Voltage (IE
Collector Cutoff Current (VCB
~
~
~
~
2.0 mA, IB
~
100 pA, IE
~
0)
~
0)
10 pA, IC
10 Vdc, IE
~
0)
0)
V(BR)CEO
10
-
V(BA)CBO
15
V(BA)EBO
4.5
-
ICBO
-
-
Vdc
Vdc
-
Vdc
10
nAdc
ON CHARACTERISTICS
I DC Current Gain (lc ~ 20 mA, VCE ~ 5.0 V)
20
200
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(lc ~ 20 mAde, VCE ~ 5.0 Vdc, f
Collector-Base Capacitance
(VCB ~ 5.0 Vdc, IF ~ 0, f
~
~
1.0 GHz)
tr
-
4.5
-
GHz
Ccb
-
0.8
1.2
pF
-
14
8.0
-
-
4.5
6.0
-
1.0 MHz)
FUNCTIONAL TESTS
Gain @ Noise Figure
(lC ~ 10 mAde, VCE
Noise Figure
(lC ~ 10 mAde, VCE
GNF
~
5.0 Vdc)
f
f
~
f
~
~
500 MHz
1.0 GHz
dB
NF
~
5.0 Vdc)
f~
500 MHz
1.0GHz
dB
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-293
/
MPS536
5
I
I
GAmox
0
.......
~
t
0
.......
10
15
= 5 V r--
VCE = 5 V
IC = 20 rnA
0
25
20
25
0.2
0.5
0.3
~ t--
t - 500 MHz
~
152112~ ~
0
IC=20mA
0.3
V
t = 1 GHz
I--- Jo./
"
0.5
t, FREQUENCY IGHzl
l---
~
I
I'f::: ~
VCE=5V~
5
VCE = 5 V
o
o
Figure 3. Maximum Unilateral Gain (GUmaxl
end Insertion Gain (1621121
versus Frequency
8
12
IC, COLLECTOR CURRENT (mAl
16
Figure 4. Gain at Noise Figure versus
Collector Current
10
2
6
....-
-..--
t = 1 GHz
............
f - 500 MHz
1
;-- r--
-
.1
2
o
o
VCE = 5V- I
I
8
12
IC, COLLECTOR CURRENT ImAl
...........
111
0
GUma.
0
:-:--
Figure 2. Maximum Available Gain (GAmaxl
versus Frequency
"5~1'2
r--....: t--.
-
t, FREQUENCY IGHzl
, '_' ,
'
GUma. - 11 - 15,,1211' - 1522121 _
20 ~
I
Vik2=1j-
~
5
= 1 GHz
Figure 1. Current Gain-Bandwidth Product
versus Collector Current
0
0.2
i:
i""'""- ........
IC, COLLECTOR CURRENT ImAI
5
I
r-....
VCE
2
•
:--.
0
,,-
15~'11
15121 Ik
k",'
........
5
4
I
=
16
t = 1 MHz
0
20
1
2
VBE, BASE·EMITTER VOLTAGE IVdcl
Figure 5. Noise Figure versus Collector Current
Figure 6. Input Capacitance versus
Emitter-Base Voltage
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES .
2-294
20
MPS536
2
""'-
, "-
....... ......
--
r-
-
~
Ccb
f = 1 MHz
o
o
2
4
6
VCB. COLLECTOR-BASE VOLTAGE IVdcl
•
10
Figure 7 _Output capacitance versus
Collector-Base Voltage
FORWARD/REVERSE
TRANSMISSION COEFFICIENTS
versus
FREQUENCY
VCE = 10 V, IC = 10 mA
INPUT/OUTPUT REFLECTION COEFFICIENT
versus
FREQUENCY
VCE = 10 V, IC = 10 mA
+ j50
-j50
COMMON EMITTER S-PARAMETERS
VCE
(Volts)
IC
(mA)
f
(MHz)
10
5
10
20
511
5,2
521
522
15 ,,1
Lt/>
15 211
Lt/>
15 ,21
Lt/>
15 221
Lt/>
200
500
1000
1500
2000
0.60
0.30
0.17
0.15
0.28
6.60
3.64
2.11
1.70
1.29
125
87
56
28
2
0.07
0.14
0.22
0.30
0.33
68
57
43
28
13
0.71
0.47
0.32
0.22
0.25
-35
-43
-69
-112
-174
200
500
1000
1500
2000
0.48
0.21
0.12
0.18
0.32
-43
-60
-103
156
"0
-52
-66
-122
138
104
8.78
4.31
2.40
1.90
1.41
118
84
54
29
4
0.06
0.12
0.20
0.29
0.33
69
47
31
16
0.62
0.37
0.24
0.16
0.23
-42
-46
-73
-126
170
200
500
1000
1500
2000
0.38
0.14
0.11
0.22
0.35
-59
-76
-144
132
103
10.21
4.72
2.58
1.99
1.46
112
81
53
28
4
0.06
0.12
0.20
0.29
0.33
70
63
49
34
19
0.54
0.30
0.19
0.12
0.22
-46
60
MOTOROLA SMALL-SIGNAL TRANSISTORS, FET5 AND DIODES
2-295
-47
-74
-139
161
MAXIMUM RATINGS
Symbol
MPS850
MPS750
Collector-Emitter Voltage
VCE
40
60
Vdc
Collector-Base Voltage
VCB
60
80
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
2.0
Adc
625
5.0
mW
mWrC
1.5
12
Watt
mWrC
-55to +150
'c
Rating
Collector Current -
•
Continuous
Total Power Dissipation
@TA=25'C
Derate above 25'C
Po
Total Power Dissipation
@TC=25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
MPS651
MPS751
Unit
THERMAL CHARACTERISTICS
P\
CASE 29-04, STYLE 1
TO-92 (TO-226AA~
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
'CIW
Thermal Resistance, Junction to Ambient
ROJA
200
'CIW
3 Collector
Base~
,,'
3
Characteristic
I
NPN
MPS6S0, MPS651
PNP
MPS750, MPS751
, EmItter
.:~'
1 Emitter
AMPLIFIER TRANSISTORS
ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
40
60
-
60
80
-
-
5.0
-
-
0.1
0.1
-
0.1
75
75
75
40
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 ~dc, IE = 0)
V(BR)CEO
MPS650, MPS750
MPS651, MPS751
Emitter-Base Breakdown Voltage
(lC = 0, IE = 10 ~dc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
V(BR)EBO
ICBO
MPS650, MPS750
MPS651, MPS751
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
lEBO
-
Vdc
V(BR)CBO
MPS650, MPS750
MPS651, MPS751
Vdc
Vdc
~dc
/.Adc
ON CHARACTERISTICS/I)
DC Current Gain
(lC = 50 mA. VCE = 2.0 V)
(lc = 500 mA, VCE = 2.0 V)
(lc = 1.0 A, VCE = 2.0 V)
(lc = 2.0 A, VCE = 2.0 V)
hFE
-
-
Collector-Emitter Saturation Voltage
(lC = 2.0 A.IB = 200 mAl
(lC = 1.0A,IB = 100mA)
VCE(sat)
-
0.5
0.3
Base-Emitter On Voltage
(lC = 1.0 A, VCE = 2.0 V)
VBE(on)
-
1.0
Vdc
Base-Emitter Saturation Voltage
(lC = 1.0 A. IB = 100 mAl
VBE(sat)
-
1.2
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 50 mAde, VCE = 5.0 Vdc, f = 100 MHz)
(1) Pulse Test: Pulse Width", 300 I-'S, Duty Cycle = 2.0%.
(2) fT is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-296
NPN MPS650, MPS651, PNP MPS750, MPS751
FIGURE 1 - MPS660. MPS661
TYPICAL DC CURRENT GAIN
FIGURE 2 - MPS750. MPS751
TYPICAL DC CURRENT GAIN
NPN
300
~ 210
- ....t1
.-
180 -
ii
150
g
120
~ 90
60
-
2~O/
..J..-1'"
::::::
-
I
z
~17 5
i'
~
'"~
125
g
10 0
~
75
u
\
25°C
515 0
I~
-
I
-5JOC
I
20 0
\
V~E l2b vi
TJ: 125°C
22 5
TJ: 125°C
'"
!Z
a
V~E ~ 2~ vi
I
270
240
PNP
25 0
.... ~
I
I
\
•
'-55°C
......
50
30
\
5
o
o
10
50
20
100
200
500 IDA 2.0 A 40 A
IC. COLLECTOR CURRENT (rnA)
10
20
FIGURE 3 - MPS660. MPS651
DNVOLTAGES
50
100 200
500 1.0 A 2.0 A 4.0 A
IC, COLLECTOR CURRENT (rnA)
FIGURE 4 - MPS750. MPS751
ON VOLTAGES
PNP
NPN
2.0
.0
1. 8
1. 8
1. 6
in
~1. 4
!:;1 .4
~
:;;-1 .2
~1. 2
~
~
1. 0
VBE("t) @ I~
I-
c5 0 B
:>
:::
o
:>
:>'
o. 2
50
100
20A
lOA
200
500
IC. COLLECTOR CURRENT (rnA)
VBE(on) @ VCE
.6
II III
v~Ei,;ti~ I~L -
4
VBE("t)@I~
08
VBE(on) @ VCE - 2.0 V
:> O. 6
0
'"
~1 0
2
0
40A
FIGURE 5 - MPS650. MPS651
COLLECTOR SATURATION REGION
100
50
I ""I 1
I 11111 I
in 09
~ 08
TJ : 25°C
07
\
1.0
in 09
!:;
~ 08
~ 07
:>
~
:>
ffi 05
ffi 0 5
c) 0.6
t=
~ 0.4
~ 03
~
o
~
IC: 20 A
III II I
III II I
Ic:l0mA
III I II lIill II II 11111 I
III I II 1Iill II I ""I I
IC: 2 0 A
Ic· 100 rnA IC: 500 rnA
06
~ 04
:5 0 3
TJ: 25°C
t;
~ 02
o
02
u
r--
0
005
4.0 A
t=
Ic: lOrnA IC: 100 rnA IC : 500 rnA
u 0.1
:>
20 A
I--
PNP
!:;
~
200
500
lOA
IC, COLLECTOR CURRENT (rnA)
-
FIGURE 6 - MPS750. MPS751
COLLECTOR SATURATION REGION
NPN
10
;::
20 V
Iflill
VCE(s't) @llc~l~ 1\J_
4
01
0.2
05 10 2.0
~
:>
5.0
10
20
50 100 200 500
05 1 0 20
50 10 20
If!. BASE CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-297
r--
T
0
005 0.1 0.2
lB. BASE CURRENT (rnA)
i
01
50
100 200
500
NPN MPS650, MPS651, PNP MPS750, MPS751
FIGURE 7 - MPS650, MPS651 SOA,
SAFE OPERATING AREA
FIGURE 8 - MPS750, MPS751 SOA,
SAFE OPERATING AREA
NPN
PNP
10
10
4.0
40
~ 2.0
~ 1. 0
1.~ ms
....
u
~ O. 5
=~\O~~S
3 10
05
bi:::j 0.2
MPS650
:5
t;
MPS651
8
.,!C = 25°C
~ 0 2~TA=25~
1
2.
8
.:;> O. 1
0.05
0.02
0.0 1
1.0
----
2.0
Wire limit
Thermal limit
Second Breakdown limit
.)
1 __
10m._
~ 2.0
..f' O. 1
0.05
...
5.0
10
20
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)
....
f--- TA = 25°C'
0.02
50
001
10
100
....
-
----
--20
,.1,
100 ~s
MPS750
MPS751
.......... Te
Wire limit
Thermal limit
25°C
....
Second Breakdown limit
5.0
10
20
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-298
~
50
100
MPS918
MPS3563
MAXIMUM RATINGS
Symbol
Rating
MPS918 MPS3563
Unit
Collector-Emitter Voltage
VCEO
15
12
Vdc
Collector-Base Voltage
VCBO
30
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Collector Current -
Continuous
2.0
Vdc
IC
50
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
.PD
350
2.8
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
0.85
6.8
mWrC
-55to +150
°c
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
,,'
Watt
~~'"o.'
3
1 Emitter
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
R9JC
147
°CIW
R9JA(I)
357
°CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 3.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 1.0 IlAdc, IE = 0)
(lC = 100 IlAdc, IE = 0)
Vdc
V(BR)CEO
MPS918
MPS3563
15
12
-
30
30
-
3.0
2.0
-
Vdc
V(BR)CBO
MPS918
MPS3563
Emitter-Base Breakdown Voltage
(IE = 10 IlAdc, IC = 0)
Vdc
V(BR)EBO
MPS918
MPS3563
Collector Cutoff Cu rrent
(VCB = 15 Vdc, IE = 0)
ICBO
MPS918
MPS3563
-
nAdc
10
50
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 3.0 mAde, VCE
(lc = 8.0 mAde, VCE
hFE
=
=
MPS918
MPS3563
1.0 Vdc)
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAd~)
MPS918
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
MPS918
-
-
20
20
200
VCE(sat)
-
0.4
Vdc
VBE(sat)
-
1.0
Vdc
600
600
1500
-
3.0
1.7
1.7
-
2.0
pF
hfe
20
250
-
NF
-
6.0
dB
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lc = 4.0 mAde, VCE = 10 Vdc, f = 100 MHz)
(lc = 8.0 mAde, VCE = 10 Vdc, f = 100 MHz)
MPS918
MPS3563
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 140 kHz)
(VCB = 10 Vdc, IE = 0, f = 140 kHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MPS918
MPS918
MPS3563
Input Capacitance
(VEB = 0.5 Vdc, IC
MPS918
=
0, f
=
Cobo
Cibo
140 kHz)
Small-Signal Current Gain
(lC = 8.0 mAde, VCE = 10 Vdc, f
Noise Figure
(lc = 1.0 mAde, VCE
tr
= 6.0 Vde,
=
RS
1.0 kHz)
MPS3563
= 400 ohms, f = 60 MHz)
MPS918
MHz
(1) R9JA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width"" 300 /lS, Duty Cvcle "" 1.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2·299
pF
•
MPS918, MPS3563
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unle•• otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
(lC = 6.0 mAde, VCB = 12 Vde, f = 200 MHz)
(lC = 8.0 mAde, VCE = 10 Vde, f = 200 MHz)
(Gfd + Gre < -20 dB)
MPS918
MPS3563
Power OU1put
(lC = 8.0 mAdc, VCB
MPS918
= 15 Vdc, f = 500 MHz)
Oscillator Collector Efficiency
(lC = 8.0 mAdc, VCB = 15 Vdc, Pout
= 30 mW, f = 500 MHz)
Gpe
15
14
Pout
30
,.,
25
MPS918
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-300
-
dB
mW
%
MPS930A
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
45
Vdc
Collector-Base Voltage
VCBO
60
Vdc
E'mitter-Base Voltage
VEBO
6.0
Vdc
IC
100
mAdc
Total Device Dissipation @ TA
Derate above 25"C
Collector Current -
Continuous
~
25"C
PD
625
5.0
mW
mWf'C
Total Device Dissipation @ TC
Derate above 25"C
~
25"C
PD
1.5
12
Watts
mWf'C
TJ. Tstg
-55to +150
"C
Symbol
Max
Unit
Thermal Resistance. Junction to Case
R9JC
83.3
"CIW
Thermal Resistance. Junction to Ambient
R9JA
200
"CIW
Operating and Storage Junction
Temperature Range
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
3 Collector
~.{Q
•
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Refar to MPS3903 for additional graphs.
~ 25"C unless otherwise noted.)
ELECTRICAL CHARACTERISTICS (TA
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
~
Collector-Emitter Breakdown Voltage(l) (lC
~
Collector-Base Breakdown Voltage (lC
~
Emitter-Base Breakdown Voltage (IE
Collector Cutoff Current (VCE
~
~
5.0 Vdc. IB
~
45 Vdc. IE
Collector Cutoff Current (VCE
(VCE
~
45 Vdc. VBE
45 Vdc. VBE
Emitter Cutoff Current (VEB
~
45
V(BR)CBO
60
-
V(BR)EBO
6.0
-
Vdc
0)
ICEO
-
5.6
nAdc
0)
ICBO
-
5.0
nAdc
ICES
5.0
5.0
nAdc
/L Adc
lEBO
-
5.0
nAdc
60
100
30
150
-
10 !LAdc. IC
Collector Cutoff Current (VCB
~
V(BR)CEO
~
~
5.0 Vdc. IC
~
10 mAdc. IB
10 I-lAdc. IE
~
~
0)
~
O. TA
~
0)
0)
0)
~
125"C)
0)
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(l)
(lC ~ 1.0 !LAdc. VCE ~ 5.0 Vdc)
(lc ~ 10 I-lAdc. VCE ~ 5.0 Vdc)
(lc ~ 10 !LAdc. VCE ~ 5.0 Vdc. TA
(lc ~ 500 !LAdc. VCE ~ 5.0 Vdc)
(lc ~ 10 mAdc. VCE ~ 5.0 Vdc)
-
hFE
~
-55"C)
~
Collector-Emitter Saturation Voltage(l) (lC
Base-Emitter Saturation Voltage(l) (lC
~
10 mAdc. IB
10 mAdc. IB
~
~
0.5 mAdc)
0.5 mAdc)
300
-
-
-
600
VCE(sat)
-
0.5
Vdc
VBE(sat)
0.7
0.9
Vdc
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product (lC
Output Capacitance (VCB
Input Impedance (IE
~
~
5.0 Vdc. IE
1.0 mAdc. VCB
Voltage Feedback Ratio (IE
~
Small-Signal Current Gain (lC
Output Admittance (IE
Noise Figure (lC
~
~
~
500 /LAdc. VCE
~
O. f
~
1.0 mAdc. VCB
10 I-lAdc. VCE
~
1.0 mAdc. VCE
~
~
~
5.0 Vdc. f
~
30 MHz)
1.0 kHz)
5.0 Vdc. f
~
~
~
5.0 Vdc. f
5.0 Vdc. f
5.0 Vdc. RS
~
1.0 MHz)
5.0 Vdc. f
1.0 mAdc. VCB
~
~
~
fT
45
-
Cobo
-
6.0
pF
hib
25
32
Ohms
X 10-6
1.0 kHz)
hrb
-
600
~
hfe
150
600
-
hob
-
1.0
!L mho
3.0
dB
1.0 kHz)
1.0 kHz)
10 kohms. f
~
10 Hz to 15.7 kHz)
NF
(1) Pulse Test: Pulse Width", 300 /LS. Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-301
MPS930A
TYPICAL CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN
3.0
[il
TypICal hFE
N
~
~'iC" 500"A
2.0
~
z
--
1.0
a'"
O. 7 .......
c
O. 5
'A'J~
---
-~
t!I
t-
~
IIIIIII
TJ~OC
:i:
<1
FIGURE 2 - "ON" VOLTAGES
1.0
T~ .12~O~
i III
O. 8
I II
VBEI"tl" ICIIB" 10
u::..;-
6
'-'
~
I
~
VBElonl @VCE" 5.0 V
-55°C
02
V
VCEI"tl@ ICIIB" 10
Vcnn
O. 3,
0.01 0.02
005 0.1
0.2
0.5
10
2.0
5.0
o
10
20
0.01 0.02
50 100
0.05 0.1
FIGURE 3 - COLLECTOR SATURATION REGION
~ 1.0
\
c
~
>
o. 6
~
::
! o.
g
8
1\
JA IPII~S ~o'r :~):~ ~ h~E/~
0
0.01
1\
"0.05
0.1
1.0
25'C to 125'C
J.Hl
6
2.0
5.0
-2.4
0.01 0.02
10
t;
300
"~
200
~
/"
1.0
r--
V~
~ 5.0
i'-
,/
"-
w
'-'
r--
~
t-
c::J
~
r--.
1.0
10
11JJill
20
50 100
.............
2.0
3.0
5.0 7.0
10
20
30
1. 0
0.1
50
Ie, COLLECTOR CURRENT ImAl
~
0.2
0.5
1.0
2.0
5,0
10
VR, REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-302
.
3.0
,3 2.0
0.7
5.0
C:b
b
0
7
50
0.5
2.0
TJ - 25'C
I
.i-
0.5
FIGURE 6 - CAPACITANCES
~ 10 0
a
0.2
7.0
./
z
~
0.05 0.1
0
VCE"5.0V
TJ" 25°C
g
-~5~C ;, ~5'C
I-
IC, COLLECTOR CURRENT ImAI
FIGURE 5 - CURRENT-GAIN - BANDWIDTH PRODUCT
~
50 100
JI jI
11tH
8
1"0.5
0.2
20
12~JJ It~ 1~5~C
iliIl.J:.P
11J 111111
8VB for VBe
0.02
10
-550C to 250C
l'
~ 500
tZ
5.0
I 11111 II
I 11111 II
llilllllll
IB, BASE CURRENT ImAI
'~"
2.0
I
~
f
10
'OVC for VCElsatl
100 rnA
\
\
4
8 o. 2
>
60 mA
30mA
Ic"3.0mA 10mA
6
II
II
O. 8
~
c
0.5
FIGURE 4 - TEMPERATURE COEFFICIENTS
TJ" 25°C
\
~
0.2
IC, COLLECTOR CURRENT ImAI
'C, COLLECTOR CURRENT ImAI
20
l'
50
100
MPS2222, A*
MAXIMUM RATINGS
Rating
Symbol MPS2222 MPS2222A
Unit
Collector-Emitter Voltage
VCEO
30
40
Vde
Collector-Base Voltage
VCBO
60
75
Vde
Emitter-Base Voltage
VEBO
5.0
6.0
Vde
IC
600
mAde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
625
5.0
mW
mWfC
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
1.5
12
Watts
mWfC
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
3 Collector
~~
•
1 Emitter
·C
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RflJC
83.3
·C/W
Thermal Resistance, Junction to Ambient
RflJA
200
·C/W
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Vde
V(BR)CEO
MPS2222
MPS2222A
30
40
-
60
75
-
5.0
6.0
-
-
-
10
-
0.01
0.01
10
10
Vde
V(BR)CBO
MPS2222
MPS2222A
Vde
V(BR)EBO
MPS2222
MPS2222A
Collector Cutoff Current
(VCE = 60 Vde, VEB(off) = 3.0 Vde)
MPS2222A
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA = 125·C)
(VCB = 50 Vde, IE = 0, TA = 125·C)
MPS2222
MPS2222A
MPS2222
MPS2222A
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
MPS2222A
Base Cutoff Current
(VCE = 60 Vde, VEB(off) = 3.0 Vde)
MPS2222A
ICEX
ICBO
nAde
pAde
lEBO
-
IBL
10
nAde
-
20
nAde
35
50
75
35
100
50
30
40
-
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde, TA = -55·C)
(lC = 150 mAde, VCE = 10 Vde)(l)
(lC = 150 mAde, VCE = 1.0 Vde)(l)
(lC = 500 mAde, VCE = 10 Vde)(l)
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(IC = 500 mAde, IB = 50 mAde)
hFE
MPS2222A only
MPS2222
MPS2222A
VCE(sat)
MPS2222
MPS2222A
-
MPS2222
MPS2222A
-
-
*Also available as a PN2222,A.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-303
-
-
300
-
Vde
0.4
0.3
1.6
1.0
MPS2222, A
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted)
Characteristic
Symbol
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC
= SOO mAde, IB =
Min
-
MPS2222
MPS2222A
Unit
1.3
1.2
0.6
-
MPS2222
MPS2222A
50 mAde)
Max
Vde
'VBE(sat)
2.6
2.0
-
SMALL-SIGNAL CHARACTERISTlCS
t,.
Current-Gain - Bandwidth Product(2)
(lC = 20 mAde, VCE = 20 Vde, f = 100 MHz)
•
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VEB = 0.5 Vde, IC
=
1.0 MHz)
Input Impedance
(lC = 1.0 mAde, VCE
(lC = 10 mAde, VCE
0, f
=
Cobo
-
-
8.0
-
-
30
25
2.0
0.25
8.0
1.25
-
pF
k!l
hie
MPS2222A
MPS2222A
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
MPS2222A
MPS2222A
X 10-4
h re
-
-
8.0
4.0
50
75
300
375
5.0
25
35
200
rb'C e
-
150
ps
NF
-
4.0
dB
(VCC = 30 Vde, VBE(off) = 0.5 Vde,
IC = 150 mAde, IBI = 15 mAde) (Figure 1)
td
10
ns
(VCC = 30 Vde, IC = 150 mAde,
IBI = IB2 = 15 mAde) (Figure 2)
ts
-
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
MPS2222A
MPS2222A
Output Admittance
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
MPS2222A
MPS2222A
Collector Base Time Constant
(IE = 20 mAde, VCB = 20 Vde, f
MPS2222A
=
250
300
pF
Cibo
MPS2222
MPS2222A
= 10 Vde, f = 1.0 kHz)
= 10 Vde, f = 1.0 kHz)
Noise Figure
(lC = 100 !LAde, VCE
MHz
MPS2222
MPS2222A
=
JLmhos
hoe
= 31.8 MHz)
10 Vde, RS
-
hfe
1.0 kG, f
=
1.0 kHz)
MPS2222A
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time
Rise Time
Storage Time
Fall Time
tr
tf
25
ns
225
ns
60
ns
(1) Pulse Test: Pulse Width", 300 JLS, Duty Cycle'" 2.0%.
(2) t,. is defined as the frequency at which Ihfel extrapolates to unity.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 1 - TURN-ON TIME
FIGURE 2 - TURN'()FF TIME
+30
v
-+1
1- 1.0 to 100 iJ-s, DUTY
+160V~
20:1.
CYCLE'" 2%
,,
_J...
-T CS*<10PF
-14V
-+
___ J
Scope Rise Time
<4
ns
1- <
-r-
1k
20 ns
*Total shunt capacitance of test jig.
connectors, an~ oscilloscope.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-304
iCs·
___ .1
1 N914
-4V
< 10 pF
MPS2222, A
FIGURE 3 - DC CURRENT GAIN
100 0
700
500
~
z
;;: 300
"'
200
'"'"u
u
100
~
c
~
115'C
TJ
-
-
-
~
r-
-
I I
0
0
-- -
1--
-
25'C
"lI>
~ !-
-55'C
0
0
..:... -
10
0.1
0.2
03
05
0.7
1.0
2.0
-
VCE-1.0V
VCE=10V
~ ~
UJIII
30
5.0
70
10
20
30
50
70
200
100
300
500
700 1.0 k
IC. COLLECTOR CURRENT (rnA)
FIGURE 4 - COLLECTOR SATURATION REGION
gc
~
1.0
TJ = 25'C
O. 8
Ic=1.0mA
0.6
lOrnA
\
O. 4
O. 2
o
0.005
0.01
-
\ 500 rnA
\150mA
_1
\
\
\
1\
1"0.02
0.05
0.03
0.1
0.2
0.3
0.5
1.0
"t-
r-2.0
3.0
10
5.0
20
30
50
IS. BASE CURRENT (rnA)
FIGURE 5 - TURN·ON TIME
FIGURE 6 - TURN·OFF TIME
20 0
10 0
500
ICIIS = 10
TJ = 25'C
1'-
0
'r@VCC-30V-'ld@VES(,II) = 2.0 V_~
ld @VES(,II) = 0
"
""-
'"
""-
10
!
'"
;::
70
50
'1
30
.......
20
7. 0
5. 0
3. 0
2.0
5.0 7.0
r-
100
"
::::::",
I~}: ~~6c
,),.- 1118'1
200
0
0
0
VCC-30V
ICIIS = 10
300
.......
10
20
30
50
70
100
.......
200
10
r--300
500
IC. COLLECTOR CURRENT (rnA)
7.0
5.0
5.0 7.0
10
20
30
50
70
100
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-305
200
300
500
•
MPS2222, A
FIGURE 8 - SOURCE RESISTANCE EFFECTS
FIGURE 7 - FREQUENCY EFFECTS
10
,
'"
~
w
'"
6.0
'"~
4.0
~
IIll I II 11111 II
l\
~
8.0
10
1111 I II
I
RS = OPTIMUM
SOURCE
RESISTANCE
IC= 1.0mA, RS= 150n
500 .A, RS = 100 n
100.A, RS= 1.0 kn
50 .A, RS = 4.0 kn
~
w
4.0
u:
1.0
•
z
"Iil
r'III
0.01 0.01
0.05 0.1
0.1
0.5 1.0
1.0
5.0
10
10
50
-
r-
r'
.......
I
I
I
I
I
Jl
-
~
t;
i5~
./
100
200
500 loOk 2.0k
-
6
7. 0
'"
~ 5. 0
.......
3. 0
1.0
1.0 3.0
/"
5.0
10
Cob
~
t::;
II
.t=
N--L
10 30
~
/
100
70
~
u
50
50
1.0
20
~
w
'";::
c;
5.0 1.0
.....
,I, I II~.II}.II
::::s
!.I
50
10 IUD
II
I-
u
1.0 V
~ -0.5
.5
t-
ffi
-1.0
8~
-1. 5
<3
>
0.2
5.0
10
20
50
100 200
5001.0 k
-1.0
R8VBfor VBE
-2. 5
1111111'" II
0.1 0.2
IC, COLLECTOR CURRENT (mA)
V
,
VCE(,,!)@ICIIB = 10
2.0
I
1111
:>
0.5 1.0
30
R8VC for VCElsatl
0.4
0.2
20
111111
,;'
f1s~(~IJ6~1~ 1~~
0.1
10
FIGURE 12 - TEMPERATURE COEFFICIENTS
+0.5
11111 II
II II 11111 II
TJ = 150C
iBi('j')I@IWllr!r-
~ 0.6
3.0
IC, COLLECTOR CURRENT (mA)
FIGURE 11 - "ON" VOLTAGES
O.8
V
/
REVERSE VOLTAGE (VOLTS)
o
50k lOOk
~
200
z
0.2 0.3 0.5
20k
300
~;li
z
1.0
0.1
5.0k 10k
VCE 1= 20 IV
TJ = 25°C
x
u
g
I
/
FIGURE 10 - CURRENT·GAIN BANDWIDTH PRODUCT
0
w
/
/
:i: 500
1'-'
~
V
1.0mA
RS, SOURCE RESISTANCE (OHMS)
FIGURE 9 - CAPACITANCES
10
V
500~
f, FREQUENCY (kHz)
0
/
~
o
50 100
'"
I""
2.0
o
V
I1I1111
100.A
~
Ll
6.0
~
~.
z
I
IC=50.A
-
'"
'"u:
w
'"z
0
'"u:w
~ 10 JH I 111111
-I.
8.0
0.5
1.0 1.0
5.0 10
20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-306
MPS2369
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Emitter Voltage
VCES
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
4.5
Vde
IC
500
mAde
Po
625
5.0
mW
mWrC
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
- 55 to
+ 150
3 Collector
":~
•
1 Emitter
°c
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
15
Collector-Emitter Breakdown Voltage
(lC = 10 "Ade, VBE = 0)
V(BR)CES
Collector-Base Breakdown Voltage
(lC = 10 "Ade, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 "Ade, IC = 0)
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 20 Vde, IE = 0, TA
-
Vde
40
-
-
Vde
V(BR)CBO
40
-
-
Vde
V(BR)EBO
4.5
-
-
Vde
-
-
0.4
30
40
20
-
120
-
ICBO
=
125°C)
"Ade
ON CHARACTERISTICS
DC Current Gain(1)
(lc = 10 mAde, VCE = 1.0 Vde)
(lc = 100 mAde, VCE = 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
Base-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
VBE(sat)
0.7
Cobo
-
hie
5.0
0.25
Vde
0.85
Vde
4.0
pF
-
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, I =
1.0 MHz)
Small Signal Current Gain
(lc = 10 mAde, VCE = 10 Vde, I
=
100 MHz)
-
SWITCHING CHARACTERISTICS
Storage Time
(181 = IB2 = IC
5.0
13
ns
ton
-
8.0
12
ns
toff
-
10
18
ns
ts
=
Turn-On Time
(VCC = 3.0 Vde, IC
10 mAde) (Figure 3)
=
10 mAde, IB1
Turn-Off Time
(VCC = 3.0 Vde, IC = 10 mAde, IB1
IB2 = 1.5 mAde) (Figure 2)
(11 Pul •• T••t: Pulse Width",
300~,
= 3.0 mAde) (Figure
= 3.0
1)
mAde,
Duty Cycl. '" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-307
MPS2369
FIGURE 1 - ton CIRCUIT
3.0 V o--V\l\r----.
270 _..J~~-
_L
,T_J CS* < 4.0 pF
3.3 k
PULSE WIDTH (111 = 300 ns
DUTY CYCLE = 2.0%
•
FIGURE 2 - toft CIRCUIT
--l 11 f--
+1015:~_7
-4.1SV--
3.0 V 0---"''''''----,
270
If-- < 1.0ns
3.3 k
PULSE WIDTH (1,1 = 300 ns
DUTY CYCLE = 2.0%
FIGURE 3 - STORAGE TEST CIRCUIT
+"OV]-1\ IOV
- 4.0 V
< 1.0 ns
I.-
980 __ ;----4_ _
I
,,>--Jo~__~
SOO
_.L_
,TCS' < 3.0 pF
_J
PULSE WIDTH (1,1 = 300 ns
DUTY CYCLE = 2.0%
'TDTAL SHUNT CAPACITANCE OF TEST JIG AND CONNECTORS.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-308
MPS2907, A
MAXIMUM RATINGS
Rating
Symbol MPS2907IMPS2907A
Unit
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
5.0
Vde
IC
SOO
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
S25
5.0
mW
mW/,C
Total Device Dissipation @ T C = 25'C
Derate above 25'C
Po
1.5
12
Watts
mW/,C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
40
SO
I
SO
-55 to
Vde
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Vde
+ 150
3 Collector
~-EQ
'c
•
1 Emitter
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
'CIW
Thermal Resistance, Junction to Ambient
RruA
200
'CIW
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage( 1)
(lc = 10 mAde, IB = 0)
Vde
V(BR)CEO
MPS2907
MPS2907A
40
SO
-
Collector-Base Breakdown Voltage
(lc = 10 IlAde, IE = 0)
V(BR)CBO
SO
Emitter-Base Breakdown Voltage
(IE = 10 IlAdc, IC = 0)
V(BR)EBO
5.0
-
-
50
MPS2907
MPS2907A
-
0.020
0.010
MPS2907
MPS2907A
-
20
10
Collector Cutoff Current
(VCE = 30 Vde, VBE(off) = 0.5 Vde)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
ICEX
ICBO
(VCB = 50 Vde, IE = 0, TA = 150'C)
Base Current
(VCE = 30 Vde, VBE(off) = 0.5 Vde)
IB
Vde
Vde
nAde
IlAde
50
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
hFE
MPS2907
MPS2907A
35
75
(lC = 1.0 mAde, VCE = 10 Vde)
MPS2907
MPS2907A
50
100
(lc = 10 mAde, VCE = 10 Vde)
MPS2907
MPS2907A
75
100
(lc = 150 mAde, VCE = 10 Vde)(l)
MPS2907, MPS2907 A
100
(lc = 500 mAde, VCE = 10 Vde)(l)
MPS2907
MPS2907A
30
50
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sa!)
Base-Emitter Saturation Voltage(l)
(lc = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
VBE(sat)
-
-
300
-
Vde
-
0.4
I.S
-
1.3
2.S
Vde
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-309
-
-
MPS2907, A
ELECTRICAl CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
I
Characteristic
Max
Symbol
Min
for
200
-
Unit
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l ),(2)
(lC = 50 mAdc, VCE = 20 Vdc, I = 100 MHz)
MHz
Qutput Capacitance
(VCB = 10 Vdc, IE = 0, I = 1.0 MHz)
Cobo
-
8.0
pF
Input Capacitance
(VBE = 2.0 Vdc, IC = 0, I = 1.0 MHz)
Cibo
-
30
pF
ton
-
45
ns
td
-
10
ns
-
40
ns
100
ns
80
ns
30
ns
SWITCHING CHARACTERISTICS
Turn-On Time
•
(VCC = 30 Vdc, IC = 150 mAdc,
IBI = 15 mAdc) (Figures 1 and 5)
Delay Time
Rise Time
tr
Turn-Off Time
toff
(VCC = 6.0 Vdc, IC = 150 mAdc,
iBl = IB2 = 15 mAdc) (Figure 2)
Storage Time
-
ts
Fall Time
tl
(1) Pulse Test: Pulse Width", 300 p.S, Duty Cycle'" 2.0%.
(2) for is delined as the Irequency at which Ihlel extrapolates to unity.
FIGURE 2 - STORAGE AND FALL
TIME TEST CIRCUIT
FIGURE 1 - DELAY AND RISE
TIME TEST CIRCUIT
INPUT
Zo=50fi
PRF = 150 PPS
RISE TIME", 2.0 ns
P.W. < 200 ns
INPUT
Zo=50fi
PRF = 150 PPS
RISE TIME'" 2.0 ns
P.W. < 200 ns
- 30V
200
+15 V
1.0 k
OS;;;
37
1.0 k
TO OSCILLOSCOPE
RISE TIME
-6.0 V
TO OSCI LLOSCOPE
RISE TIME" 5.0 nl
5.0 ns
50
TYPICAL CHARACTERISTICS
FIGURE 3 - DC CURRENT GAIN
3.0
.,.;-:. t:stt
VCE = 1.0
VCP 10 V
r----
2.0
--1'-- -
J
I--- -
---,.......- e--- - --
I_f-
1.0
o. 7
o.
sf..-
- -
-
,...-
-
-
- e---
-
-
-
-
--
--t'-i'-
-
- 2S"C-
-
,
-"
'
S5"C
.........
b...,
,"
-
\~
",:'\
0.3
O. 2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-310
200
300
500
MPS2907, A
FIGURE 4 - COLLECTOR SATURATION REGION
1.0
1\
II
O. 8
\
Ic·1.0mA
500 rnA
100 rnA
lOrnA
O. 6
['\
f':
O. 4
.........t--
'"
I\,
O. 2
I'-0.005
----l-
0,02
0.01
0.03
0.05 0,0) 0.1
0.2
0.3
0.5
0.7
t-- t-.
2.0
1.0
3.0
5.0
7.0
10
20
30
•
50
18 BASE CURRENT (rnA)
FIGURE 5 - TURN-ON TIME
1
VCC'30V fICIIB·l0 ITJ = 25°C
"'-"
100
0
0
200
~
......
30
20
~-
30 0
I'...
r--..
Id@VBE(nff)'OV
......
w
........
0
7.0
'5.0
-
'"
;:
_V
.......
0
0
ts'-ts-1/8 t t
10
20
30
50
70
200
100
300
'"
..........
10
7. 0
5.0
5.0 7.0
t-....
0
0
2.0V- '--f-
3.0
VCC' 30 V
IC/IB'10 - IB1' IB2 - TJ' 25°C
If
100
w
'"
;:
FIGURE 6 - TURN-OFF TIME
500
300
2001"-
5.0 7.0
500
20
10
30
50
70
100
200
300
IC, COLLECTOR CURRENT ImA)
IC, COLLECTOR CURRENT
TYPICAL SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = lOVd., TA = 25°C
FIGURE 7 - FREQUENCY EFFECTS
FIGURE 8 - SOURCE RESISTANCE EFFECTS
0
0
f1
1\
B. 0
=
~
w
l.~k~Z
B. 0
~
w
'"=>
'"u:
6.0
'"oz
4.0
w
...z 2. 0
1\
1\
~
IC '1.0 rnA, Rs' 430n
500 pA, Rs 560 n
50pA, Rs2.7 kn
100 pA, R,' 1.6 kf!
'"u:
w
'"
0
z
...z -
~ ~ ~~;~~M ~ciu~cIEI RESISTANCE
I' II I11111 I I I 1111111 I"I-T
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0
2.0
5.0
10
20
4. 0
2. 0
0
50
50 100
I
6.0
IC' 50 pA
I\~
[\1),1----
100pA
500pA
[...
1.~,~A
Rt5.
200
1....-
I-
500 1.0 k 2.0 k
5.0 k 10 k 20 k
Rs, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-311
V
V-
blJlU
nil
100
V
1/
50 k
500
MPS2907, A
FIGURE 10 - CURRENT-GAIN - BANDWIDTH PRODUCT
FIGURE 9 - CAPACITANCES
30
0
t-
O
~
~
z
<
!::
~
"
Ceb
0
t-....
0
0
0
7. 0
Cob
1/
VCE 20 V
TJ - 25°C
f0
3.0
II I
0
2.0
J:0.2 0.3
0.50.7 1.0
2.0 3.0
5.07.0 10
20 30
~
1/ 11
01-
5.0
0.1
,
0
r-...
20
1.0
II r
2.0
5.0
REVERSE VOLTAGE (VOLTS)
f-
i I_II ~III II II IIIII I
TJ-25C
o. B
5
~
w
o. 6
~
:;
o
>
+0. 5
1111111111 I
Ti
f"
I I III UJ-+11IIII I
50
100
200
500 1000
IIIIIIIITI
11111111 II
V......
VBE{sa,)@ICIIB- 10
20
FIGURE 12 - TEMPERATURE COEFFICIENTS
FIGURE 11 - "ON" VOLTAGE
1.0
10
IC. COLLECTOR CURRENT {mAl
ROVC for VCE(satJ
-0.5
VBE{.,)@VCE-l0V
-1.0
0.4
-1.5
o. 2
-2.0
ROVBforVBE
VCE{",)@ICIIB- 10
o
0.1 0.2
0.5
1.0 2.0
IIII
5.0 10
20
-2.5
0.1 0.2
50 100 200 500
11111111
0.5
1.0 2.0
5.0
10
20
IC. COLLECTOR CURRENT (mA)
IC. COLLECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-312
50 100 200 500
MPS3403
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Rating
IC
500
mA
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
PD
1.5
12
Watts
mWrC
TJ. Tstg
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
~~'~.
"
23
..
1 Eminer
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
°CIW
Thermal Resistance. Junction to Ambient
RruA
200
°CIW
Characteristic
NPN SILICON
Refer to MPS8098 lor graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC ~ 1.0 mAl
V(BR)CEO
25
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 100 pAl
V(BR)CBO
25
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 10 pAl
V(BR)EBO
5.0
-
Vdc
100
15
nA
pA
100
nA
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 18 V)
(VCB ~ 18 V. TA ~ 100°C)
ICBO
Emitter Cutoff Current
(VBE ~ 5.0 V)
lEBO
-
hFE
180
540
-
ON CHARACTERISTICS
DC Current Gain
(lC ~ 2.0 mA. VCE
~
4.5 V)
Collector-Emitter Saturation Voltage
(lC ~ 50 mA. IB ~ 3.0 mAl
VCE(sat)
-
0.3
Vdc
Base-Emitter Saturation Voltage
(lC ~ 50 mAo IB ~ 3.0 mAl
VBE(sat)
0.6
1.3
Vdc
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(lC ~ 2.0 mAo VCE ~ 4.5 V. I
(lc ~ 2.0 mAo VCE ~ 4.5 V. I
~
~
1.0 kHz)
1.0 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-313
MPS3563
For Specifications, See MPS918 Data
MPS3566
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
200
mAde
mW
mWf'C
Rating
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25"C
=
25"C
PD
625
5.0
Total Power Dissipation @ TA
=
6O"C
PD
450
mW
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
1.5
12
Watts
mWf'C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55to +150
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
3 Collector
":~
"C
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rruc
83.3
"CIW
Thermal Resistance, Junction to Ambient
RruA
200
"CIW
Characteristic
1 Emitter
3
NPN SILICON
Refer to 2N4400 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Symbol
Min
V(BR)CEO(sus)
30
Collector-Base Breakdown Voltage
(lC = 100 pAl
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10pA)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 30 mAl
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 75"C)
ICBO
Emitter Cutoff Current
(VBE = 5.0 V)
lEBO
-
-
Vdc
Vdc
Vdc
50
5.0
nA
pA
10
pA
ON CHARACTERISTICS
DC Current Gain
(lc = 10 mA, VCE
(lc = 2.0 mA, VCE
hFE
= 10 V)
= 10 V)
150
80
600
-
-
Collector-Emitter Saturation Voltage
(lc = 100 mA, IB = 10 mAl
VCE(sat)
-
1.0
Vdc
Base-Emitter On Voltage(1)
(lC = 100 mA, VCE = 1.0 V)
VBE(on)
-
0.9
Vdc
Cabo
-
25
pF
hie
2.0
35
-
SMALL-8IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, I = 1.0 MHz)
Small-Signal Current Gain
(lc = 30 mA, VCE = 10 V, f
=
20 MHz)
(1) Pulse Test: Pulse Width .. 300 I'S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-314
MPS3567
thru
MAXIMUM RATINGS
MPS356~IMPS35611
Rating
Symbol MPS3569
Vde
Collector-Base Voltage
VCBO
80
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Po
625
5
mW
mWrC
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
·C
Continuous
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
Operating and Storage Junction
Temperature Range
MPS3569
Unit
VCEO
Collector Current -
40
I
Collector-Emitter Voltage
60
Vde
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
.:~
, Emitter
THERMAL CHARACTERISTICS
Symbol
Max
Unit
AMPLIFIER TRANSISTORS
Thermal Resistance, Junction to Case
RruC
83.3
·C/W
NPN SILICON
Thermal Resistance, Junction to Ambient
RruA
200
.c/w
Characteristic
RBler to 2N4400 for graphs for MPS3567, 3569.'
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
40
60
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
(lC = 30 mAde, IB = 0)
VCEO(sus)
MPS3567, MPS3569
MPS3568
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
80
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
Vdc
-
50
5.0
nAde
pAde
-
25
nAde
MPS3567, MPS3568
MPS3569
40
100
-
MPS3567, MPS3568
MPS3569
40
100
120
300
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 40 Vdc, IE = 0, TA
ICBO
=
75'C)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 30 mAde, VCE
(lC
=
hFE
=
150 mAde, VCE
1.0 Vdc)
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
fy
-
0.25
Vde
1.1
Vde
60
-
MHz
Cobo
-
20
pF
Cibo
-
80
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
=
0, f
=
1.0 MHz)
°Refer to MPS8098 for graphs for MPS3568.
(1) Pulse Test: Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-315
•
MAXIMUM RAnNGS
Rating
Collector-Emitter Voltage
Value
Unit
Vde
VCEO
25
Collector-Emitter Voltage
VCES
25
Vde
Collector-Base Voltage
VCBO
25
Vde
Emitter-Base Voltage
VEBO
40
Vdc
Collector Current -
•
Symbol
IC
500
mAde
Total Device Dissipation @ TA
Derate above 25°C
Continuous
= 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
MPS3638, A
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
1/)
~--ES5'~"'
2
1 Emitter
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
SWITCHING TRANSISTORS
RruC
83.3
°C/W
PNP SILICON
RruA(1)
200
°C/W
(1) RruA is measured with the device soldered into a typical printed circuit board.
Refer to 2N4402 for graphs.
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lc = 100 /lAde, VBE = 0)
V(BR)CES
25
-
Vde
Collector-Emitter Sustaining Voltage(1)
(lC = 10 mAde, IB = 0)
VCEO(sus)
25
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 /lAde, IE = 0)
V(BR)CBO
25
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 /lAde, IC = 0)
V(BR)EBO
4.0
-
Vde
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 15 Vde, VBE = 0)
(VCE = 15 Vde, VBE = 0, TA
ICES
=
Base Current
(VCE = 15 Vdc, VBE
lEBO
-
IB
-
-65°C)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
/lAde
-
0.035
2.0
35
nA
0.035
/lAde
= 0)
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 1.0 mAde, VCE
hFE
=
10 Vde)
MPS3638A
80
(lC
=
10 mAde, VCE
=
10 Vde)
MPS3638
MPS3638A
20
100
(lC
=
50 mAde, VCE
=
1.0 Vde)
MPS3638
MPS3638A
30
100
MPS3638
MPS3638A
20
20
(lC
= 300
mAde, VCE
= 2.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 2.5 mAde)
(lC = 300 mAde, IB = 30 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 2.5 mAde)
(lC = 300 mAde, IB = 30 mAde)
VBE(sat)
-
-
-
Vde
-
0.25
1.0
-
1.1
2.0
Vde
0.80
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-316
-
MPS3638, A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMAU.-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 3.0 Vde, IC = 50 mAde, f
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
Input Impedance
(lc = 10 mAde, VCE
fy
=
MPS3638
MPS3638A
100 MHz)
Cabo
MPS3638
MPS3638A
1.0 MHz)
Cibo
MPS3638
MPS3638A
1.0 MHz)
hie
=
10 Vde, f
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vde, f
=
1.0 kHz)
=
1.0 kHz)
Output Admittance
(lC = 10 mAde, VCE
=
1.0 kHz)
10 Vde, f
-
-
20
10
pF
pF
-
65
25
2000
-
MPS3638
MPS3638A
Ohms
X 10- 4
h re
Small-Signal Current Gain
(lC = 10 mAde, VCE = 10 Vde, f
=
MHz
100
150
-
26
15
25
100
-
hoe
-
1.2
mmhos
td
-
20
ns
tr
-
70
ns
Is
140
ns
If
-
70
ns
ton
-
75
ns
toff
-
170
ns
hfe
MPS3638
MPS3638A
-
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 10 Vde, IC
IBI = 30 mAde)
= 300 mAde,
Fall Time
(VCC = 10 Vde, IC = 300 mAde,
IBI = 30 mAde, IB2 = 30 mAde)
Turn-On Time
(lc
Turn-Off Time
(lC
Storage Time
=
=
300 mAde, IBI
300 mAde, IBI
= 30 mAde)
= 30 mAde, IB2 = 30
mAde)
(1) Pulse Test: Pulse Width"" 300 ",", Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-317
•
MPS3640
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
80
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25"C
=
25"C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25"C
=
25"C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
"C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
1/~()'~O'
2
1 Emitter
3
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
"CIW
Thermal Resistance, Junction to Ambient
RruA
200
"CIW
Characteristic
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(VCE
=
100 /lAde, VBE
=
10 mAde, IB
= 0)
= 0)
= 0)
= 0)
100/IAde, IE
100 /lAde, IC
= 6.0 Vde, VBE = 0)
= 6.0 Vde, VBE = 0, TA = 65"C)
= 6.0 Vde, VBE = 0)
Collector Cutoff Current
Base Current
=
(lC
(IE
=
(lc
(VCE
(VCE
V(BR)CES
12
VCEO(sus)
12
VIBRICBO
12
V(BRIEBO
4.0
ICES
-
IB
-
-
-
Vde
Vde
Vde
Vde
0.01
1.0
/lAde
10
nAde
120
-
ON CHARACTERISTlCS(1)
= 10 mAde, VCE = 0.3 Vde)
= 50 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage (lC = 10 mAde, IB
(lC = 50 mAde, IB
(lC = 10 mAde, IB
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB
(lC = 10 mAde, IB
(lC = 50 mAde, IB
DC Current Gain
(lC
(lC
hFE
= 1.0 mAde)
= 5.0 mAde)
= 1.0 mAde, TA =
= 0.5 mAde)
= 1.0 mAde)
= 5.0 mAde)
VCE(sat)
65"C)
VBE(sat)
30
20
0.75
0.75
-
-
0.2
0.6
0.25
Vde
0.95
1.0
1.5
Vde
SMALL-8IGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
= =
= 5.0 Vde, f =
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
(lC
=
10 mAde, VCE
100 MHz)
5.0 Vde, IE
= 0.5 Vde,
IC
fT
Cobo
Cibo
500
-
-
MHz
3.5
pF
3.5
pF
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 6.0 Vde, IC
IB1 = 5.0 mAde)
Storage Time
(VCC
Delay Time
= 50 mAde, VBE(off) =
= 6.0 Vde, IC =
1.9 Vde,
td
tr
50 mAde, IB1
=
IB2
=
5.0 mAde)
Fall Time
ts
tf
Turn-On Time
(VCC = 6.0 Vde, IC
(VCC = 1.5 Vde, IC
=
=
Turn-Off Time
(VCC = 6.0 Vde, IC
(VCC = 1.5 Vde, IC
= 50 mAde, VBE(off) = 1.9 V, IB1 =
= 10 mAde, IB1 = IB2 = 0.5 mAde)
50 mAde, VBE(off) = 1.9 Vde, IB1
10 mAde, IB1 = 0.5 mAde)
=
ton
5.0 mAde)
IB2
= 5.0 mAde)
toff
-
ns
ns
20
ns
12
ns
ns
25
60
ns
-
-
(1) Pulse Test: Pulse Width .. 300 /JoS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-318
10
30
35
75
MPS3640
FIGURE 1
VSS '+1.9 V
1.0 k
0.1 ~F
-:.JS
Tim.~
VSS·-6.0V
Vout
TO SAMPLING SCOPE
Input Z ~100 k
Rise Time::: 1.0 ns
Vin:r
PULSE SOURCE
Rise
FIGURE 2
VCC' -6.0 V
1.0 ns
130
:n
5.0 k
Vin~~F
Pulse Width :?200 ns
lin'" 50 Ohms
Fall Time~ 1.0 ns
Base Currents::: 5.0 rnA.
~ 10 0
~
0
VCE" 1.0 V
-
~
H250C
.....
'"c
~
t
IIIIII
I " III
!lUI!
-TJ .1250
2
~
w
-
I
O.8
li y
'"
«
VSE\ON@VCr O
~ O.6
>
>' o.4
.....
o
0
.
o. 2
0.1
0.5
0.2
1.0
2.0
5.0
10
50
20
o
100
0.1
0.5
0.2
IC. COLLECTOR CURRENT (mAl
I
I
o. a
Ic·1.0mA
'"
~u;
~~
1111
1111
5.0 rnA
I I
I I
I
O. 6
"''''
~ ~ 0.4
~
0.2
II I
o
0.05
0.02
-
IVCE' 10 V
t;
:::0
C
C
g:
:r
i,.-r-
1000
2.0
5.0
-2.0
0.1
v-
l; aD0
~
Z
:iI
60
1.0 V
oIL " I-"'"
10
0.2
0.5
1.0
2.0
5.0
10
IC. COLLECTOR CURRENT (mAl
TTnl
~
50
20
100
FIGURE 8 - CAPACITANCE
TJ-250C
3. 0
........
W
~
.....
2. 0
;:!
~ ::::-
<:;
~
'"d
./
Z
<
'l'
~50Ct025bc
5.0
-
100
25°C to 1250C
FIGURE 7 - CURRENT-GAIN-BANDWIDTH PRODUCT
~200 0 TJ - 25°C
~
"looMHz
50
-550l.:"2~C
f- RINS FOR VSE
-I
0.1
0.2
0.5
1.0
la. SASE CURRENT (mAl
20
·~W to 125lc
RINC FOR Vee(sat)
5
"-
0.01
"
0
1\
00
"'>
,.....,..
I I I
5
\
\
"'>
~~~~~tl @I~IIS ~ lh
1.0
2.0
5.0
10
IC. COLLECTOR CURRENT (mAl
'APPLIES FOR Iclis" hFE/4
0
aD rnA
0I-W
>
+0. 5
TJ.25 0c
20mA
l~
FIGURE 6 - TEMPERATURE COEFFICIENTS
FIGURE 5 - COLLECTOR SATURATION REGION
1.0
I I I
" I! I
0
10
I I
I I
I I
~Wrltl@IClIs':"
1. 0
o
0 - f-- 55OC
'"
:::0
'"
•
FIGURE 4 - "ON" VOLTAGES
1.4
T~ .I125JC
7
TO SAMPLING SCOPE
Input Z ~100 k
Rise Time::: 1.0 ns
NOTES: Collector Current = 10 rnA. Turn-On and Tum-Off Time
Sase Currents = 0.5 rnA.
FIGURE 3 - DC CURRENT GAIN
200
'"
Vout
5.0 k
51
PULSE SOURCE
Rise Time~ 1.0 ns
Pul. Width ~1 00 ns
lin' 50 Ohms
NOTES: Collector Current'" 50 rnA. Turn-On and Turn-Off Time
Fall Timl~ 1.0 ns
VCC·1.5V
400
_Cobo
1.0
I-
~
o. 7
::::
:::0
'",..:
-
200
1.0
2.0
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT (mAl
50
O. 5
0.2
70 100
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
YR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-319
10
20
MPS3646
MAXIMUM RATINGS
Rating
Symbol
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Emitter Voltage
VCES
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
S.O
Vde
Collector Current -
IC
300
500
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
625
5.0
mWrC
Total Device Dissipation @ TC = 25"<:
Derate above 2S'C
Po
350
2.8
mWrC
TJ, Tstg
-55 to +150
·C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
'CIW
Thermal Resistance, Junction to Ambient
RruA
200
'CIW
Continuous
-10 ps Pulse
•
Value
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
mW
mW
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPNSILICON
Refer to 2N4264 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Charactaristic
Symbol
Min
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCE
(VCE
(lC
(IE
=
(lC
Collector-Emitter Sustaining Voltage(l)
(lC
=
=
100 pAde, VBE
=
10 mAde, IB
= 0)
= 0)
= 0)
= 0)
100 pAde, IE
100 pAde, IC
= 20 Vde, VBE = 0)
= 20 Vde, VBE = 0, TA = 65'C)
V(BR)CES
40
VCEO(sus)
15
V(BR)CBO
40
-
V(BR)EBO
5.0
ICES
-
0.5
3.0
Vde
Vde
Vde
pAde
ON CHARACTERISTlCS(11
DC Current Gain
(lC
(lC
(lC
Collector-Emitter Saturation Voltage
(lC
(lc
(lC
(lC
Base-Emitter Saturation Voltage
(lC
(lC
(lC
= 30 mAde, VCE = 0.4 Vde)
= 100 mAde, VCE = 0.5 Vde)
= 300 mA, VCE = 1.0 Vde)
= 30 mAde, IB = 3.0 mAde)
= 100 mAde, IB = 10 mAde)
= 300 mAde, IB = 30 mAde)
= 30 rnA, IB = 3.0 mA, TA = 65'C)
= 30 mAde, IB = 3.0 mAde)
= 100 mAde, IB = 10 mAde)
= 300 mAde, IB = 30 rnA)
hFE
VCE(sat)
VBE(sat)
30
25
15
0.73
-
120
-
-
0.2
0.28
0.5
0.3
Vde
0.95
1.2
1.7
Vde
SMALL-SIGNAL CHARACTERISTICS
t,.
Current-Gain - BandwIdth Product
(lC = 30 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
1.0 MHz)
350
-
MHz
-
5.0
pF
9.0
pF
ton
-
18
n.
Id
-
10
ns
tr
-
15
ns
toff
-
28
ns
15
ns
18
ns
Cobo
Cibo
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 10 Vde, VBE(off) = 3.0 Vde, IC
IBI = 30 mAde) (Figure 1)
Delay Time
=
300 mAde,
Rise Time
Turn-Off Time
(VCC = 10 Vde, IC
(Figure 1)
Fall Time
Storage Time
(VCC = 10 Vdc, IC
= 300 mAde, IBI =
IB2
= 30 mAde)
tf
ts
=
10 mAde, IBI
=
IB2
=
10 mAde)
(Figure 2)
(1) Pulse Test: Pulse Width .. 300 ps, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs .AND DIODES
2-320
MPS3646
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
-3.0 V
+10 V
1.0 k
+7. 6V
n
...J
L
o
tr,tf <1.0ns
Zin
To Sampling Scope
Vin1
0.1
Pulse Width ~ 240 ns
33
120
Zin
t r <1.0 ns
= 100 kSl
50
= 50 n
FIGURE 2 - CHARGE STORAGE TIME TEST CIRCUIT
+11V
+10V
+6.0 V
10% Pulse
500
0~1
Vin
-10 V
t r <,·On5
Pulse Width == 300 ns
Duty Cycle
Zin = 50
= 2.0%
56
-=
n
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-321
•
MPS3702'
MPS3703
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RAnNGS
Rating
Symbol MPS3702 MPS3703
Unit
VCEO
25
30
Vde
Collector-Base Voltage
VCBO
40
50
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
PD
625
5.0
mW
mWf'C
Collector-Emitter Voltage
Collector Current -
Continuous
Total Device Dissipation @TA = 25·C
Derate above 25·C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
~()'~"
"
23
1 EmItter
·C
AMPLIFIER TRANSISTORS
THERMAl CHARACTERISTICS
PNP SILICON
Characteristic
Thermal Resiatanee, Junction to Ambient
Refer to 2N4402 for graphs.
ELECTRICAL CHARACTERISnCS (TA
= 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Vde
V(BR)CEO
25
30
MPS3702
MPS3703
Collector-Base Breakdown Voltage
(lC = 100 /lAde, IE = 0)
V(BR)CBO
MPS3702
MPS3703
Emitter-Base Breakdown Voltage
(IE = 100 /lAde, IC = 0)
40
50
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
5.0
-
-
Vde
-
Vde
100
nAdc
100
nAdc
ON CHARACTERIS11CS
DC Current Gain(l)
(lC = 50 mAde, VCE
hFE
= 5.0 Vdc)
60
MPS3702
MPS3703
-
30
300
150
Collector-Emitter Saturation Voltage(l)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
-
0.25
Vde
Base-Emitter On Voltage(l)
(lC = 50 mAde, VCE = 5.0 Vdc)
VBE(on)
0.6
1.0
Vde
tr
100
-
MHz
Cobo
-
12
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 5.0 Vdc, f
OU1put Capacitance
(VCB = 10 Vdc, f
= 20 MHz)
= 1.0 MHz)
(1) Pulse Test: Pulse Width = 300 p.s, Duty Cycle
= 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-322
pF
MPS3704
MPS370S
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current -
Continuous
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Operating and Storage Junction
Temperature Range
IC
600
mAdc
PD
625
5.0
mW
mWrC
TJ, Tstg
-55to+150
"C
1'~~'~"
2
1 Emitter
3
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
NPNSIUCON
Thermal Resistance, Junction to Ambient
ReIer to 2N4400 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Svmbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAdc, IE = 0)
V(BR)CEO
30
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 !lAdc, IE = 0)
V(BR)CBO
50
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 p.Adc, IC = 0)
V(BR)EBO
5.0
-
Vdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
100
nAdc
100
50
300
150
-
0.6
0.8
VBE(on)
0.5
1.0
Vdc
IT
100
-
MHz
Cobo
-
12
pF
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 50 mAdc, VCE
= 2.0 Vdc)
Collector-Emitter Saturation Voltage(l)
(lC = 100 mAdc,lB = 5.0 mAdc)
hFE
MPS3704
MPS3705
VCE(sat)
MPS3704
MPS3705
Base-Emitter On Voltage(l)
(lC = 100 mAdc, VCE = 2.0 Vdc)
Vdc
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAdc, VCE = 2.0 V, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
(1) Pulse Test: Pulse Width
1.0 MHz)
= 300 p.s, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-323
•
MPS3866
MAXIMUM RATINGS
Symbol
Valua
Unit
Collector-Emitter Voltage
RatIng
VCEO
30
Vdc
Collector-Base Voltage
VCBO
55
Vdc
Emitter-Base Voltage
VEBO
3.5
Vdc
IC
0.4
Adc
Collector Current -
•
Continuous
Total Device Dissipation @ T A
Derate above 25°C
=
25°C
Po
625
5.0
mW
mWFC
Total Device Dissipation @ TC
Derate above 25·C
= 25·C
Po
1.5
12
Watts
mWI"C
TJ, Tstg
-55 to +150
·C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
1/~()'2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
·CIW
Thermal Resistance, Junction to Ambient
RruA
200
·CIW
ELECTRICAL CHARACTERISTICS
(TA
= 25·C unless otherwise
1 Emitter
3
AMPLIFIER TRANSISTOR
NPNSIUCON
noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 5.0 mAde, RBE = 1001
VCER(sus)
55
Collector-Emitter Sustaining Voltage
(lC = 5.0 mAde, IB = 0)
VCEO(sus)
30
Emitter-Base Breakdown Voltage
(IE = 100 ,.Adc, IC = 0)
V(BR)EBO
3.5
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
ICEO
Collector Cutoff Cu rrent
(VCE = 30 Vdc, VBE = -;'5 Vdc (Rev.), TC
(VCE = 55 Vdc, VBE = -1.5 Vdc (Rev.)
=
ICEX
150·C)
Emitter Cutoff Current
(VBE = 3.5 Vdc, IC = 0)
lEBO
-
-
0.02
Vdc
Vdc
Vdc
mAde
mAde
5.0
0.1
0.1
mAde
ON CHARACTERISTICS
DC Current Gain
(lC = 360 mAde, VCE = 5.0 Vdc)(1)
(lC = 50 mAde, VCE = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 20 mAde)
-
-
5.0
10
200
VCE(sat)
-
1.0
Vdc
fT
500
-
MHz
Cobo
-
3.0
pF
Gpe
10
-
dB
'1
45
-
%
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 28 Vdc, IE
= 0, f =
1.0 MHz)
FUNCTIONAL TEST
Amplifier Power Gain
(VCC = 28 Vdc, Pout
=
1.0 W, f
= 400 MHz)
Collector Efficiency
(VCC = 28 Vdc, Pout
=
1.0 W, f
= 400 MHz)
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-324
MPS3866
FIGURE 1 - 400 MHz TEST CIRCUIT SCHEMATIC
C5
L5
RF
Inputs
RF
Inputs
L3
Cl:
C2, C5:
C3:
C4:
C6:
l1.
L2:
L3, L4:
L5:
Rl:
3.035 pF
S.O 60 pF
12 pF
1000 pF
0.9-7.0 pF
Two turns #18 Wire,
1/4" 10, liS" long
FERRITE RF Choke,
One Turn, Z = 450 Ohms
RF Choke, 0.1 I'H
2-3/4 Turns, #lS Wire,
1/4"10, 3/16" long
5.6 Ohms
C6
C3
Rl
C4
TL.--.:t>-----«
!S Vac
-:-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-325
•
MPS3903
MPS3904
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
100
mAde
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mWrC
Total Power Dissipation @ TA
= 60°C
Po
450 .
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rruc
83.3
°CIW
Thermal Resistance, Junction to Ambient
RruA
200
°CIW
Collector Current -
•
Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 CoUector
.:~
mW
1 Emitter
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA
NPN SILICON
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 /lAde, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 /lAde, IC = 0)
V(BR)EBO
6.0
-
Vde
ICEX
-
50
nAde
IBL
-
50
nAde
-
Max
Unit
OFF CHARACTERISncs
Collector Cutoff Current
(VCE = 30 Vde, VEB(off)
= 3.0 Vde)
Base Cutoff Current
(VCE = 30 Vde, VEB(off)
= 3.0 Vde)
ON CHARACTERISTlCS(11
DC Current Gain
(lC = 0.1 mAde, VCE
hFE
= 1.0 Vdel
MPS3903
MPS3904
20
(lC
= 1.0 mAde, VCE = 1.0 Vdel
MPS3903
MPS3904
35
70
-
(lC
=
= 1.0 Vde)
MPS3903
MPS3904
50
100
150
300
(lC
= 50 mAde, VeE = 1.0 Vde)
MPS3903
MPS3904
30
60
MPS3903
MPS3904
15
30
-
-
0.2
0.3
IC
=
10 mAde, VCE
100 mAde, VCE
= 1.0 Vde)
40
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
Vde
Vde
0.65
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-326
-
0.85
1.1
MPS3903, MPS3904
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25"<: unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMALL-5IGNAL CHARACTERISTICS
t,.
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 6.0 Vde, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
100 kHz)
MPS3903
MPS3904
-
Cobo
Cibo
Input Impedance
(lC "" 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
MPS3903
MPS3904
Voltage Feedback Rstio
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
MPS3903
MPS3904
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f
=
1.0 kHz)
MPS3903
MPS3904
Output Admittance
(lC = 1.0 mAde, VCE
150
200
4.0
pF
B.O
pF
kn
hie
0.5
1.0
B.O
10
0.1
0.5
5.0
8.0
50
100
200
400
1.0
40
-
6.0
5.0
X 10-4
h re
hfe
hoe
=
10 Vdc, f
=
Noise Figure
(lC = 100 pAde, VCE = 5.0 Vde, RS
f = 10 Hz to 15.7 kHz)
MHz
-
I'mhos
1.0 kHz)
NF
=
1.0 kn,
MPS3903
MPS3904
dB
SWITCHING CHARACTERISTICS
(VCC = 3.0 Vdc, VBE(off) = 0.5 Vde,
IC = 10 mAde, IBl = 1.0 mAde)
Delay Time
Rise TIme
Storage TIme
(VCC = 3.0 Vdc, IC = 10 mAde,
IBl = IB2 = 1.0 mAde)
Fall Time
-
td
tr
MPS3903
MPS3904
ts
tf
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
EQUIVALENT SWITCHING TIME TEST CIRCUITS
2g-
FIGURE 2 - TURN.()FF TIME
FIGURE 1 - TURN·ON TIME
300 ns ~
Duty Cycle""
14-
+3.0 V
10 k
0"0
~,,, ~
1-
-0.5 V
<1.0ns
':!jb
10
'i\.
~
5.0
~ 5.0
2. 0
10
~ 1,0
I
I 50
20
1.0mA
100"A
30"11lOp.A
3 0.
51-.
30"A
3. 0
......
.......
~ 2.0
-'"
=
300 "A
::>
Ii- ~
10"A
IC
-...;:
~ 10
1\7' 1\00 "A
z
~
RS~-
r--.
_ 20
~
~ 7.0
Bandw;dth = 1 0 H;'1
0
O. 2i--'
100
200
500
1.0 k
f, FREQUENCY 1Hz)
2.0 k
5.0 k
o1
10 k
10
20
50100
200
500
1.0 k
f, FREQUENCY 1Hz)
2.0 k
5.0 k
10 k
NOISE FIGURE CONTOURS
(VCE = 5,0 Vdc, T A = 25°C)
FIGURE 6 - NARROW BAND, 1.0 kHz
FIGURE 5 - NARROW BANO, 100 Hz
500 k
100 k
500 k
Bandwidth'" 1.0 Hz
us100 k
Bandwidth - 1.0 Hz
(/) ZOO k
~
SDk
~
~
20k
u
w
~ 10k
lOOk
50 k
~ 20k
f-
~
10k
~ S.Ok
~ 2.0k
3.0 dB
~ l.Ok
::>
~
i2
6.0dB~
500
200
100
50
10
20
30
1.0 dB
w
4.0 dB
50 70 100
200 300
IC, COLLECTOR CURRENT I"A)
500 700
2.0dB
~ 2.0k
10 dB
s.:::>
l.Ok
~
500
10k
.0dB
5.0dB
200
100
10
B.O dB
20
30
50 70 100
200 300
Ie, COLLECTOR CURRENT I~)
500 700
1.0k
FIGURE 7 - WIOEBANO
500 k
10 Hz to 15.7 kHz
200 k
Noise Figure is Defined as:
Cii"TaD k
8" SDk
~
:i
20k
10k
1.0 dB
~
2.0dB
2.0k
~ l.Ok
::>
~
3.0 dB
500
~ 200
100
50
10
20
30
50 70 100
200 300
IC. COLLECTOR CURRENT I"A)
~ 2:
2)1/2
= 20 10910
en
==
In
= Noise Current of ~he transistor referred
en + 4KTRS +1 n RS
4KTRS
Noise Voltage of ,he Transistor referred to the input. (Figure 3)
to the input (Figure 4)
K = Boltzman's Constant (1.3B x 10.23 jPKI
5.0 dB
T
B.O dB
AS'" Source Resistance (Ohms)
500 700
2
NF
== Temperature
of the Source Resistance (OK)
1.0 k
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-328
MPS3903, MPS3904
TYPICAL STATIC CHARACTERISTICS
FIGURE 8 - DC CURRENT GAIN
400
--
TJ =125°C
:.::~~
z
:c 200
5'"
'" ~
...'"::>gl00
~
.......
,
, ~~
..
80
0
,:,;: p-
40
0.004 0.006
0.01
0.02 0.03
~ i==-
,
,
..
;.;;-
r=-
-+-
-'
MPS3904
- - VCE-l.0V
- - - VCE-l0V
~
'
II ill
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
IC. COLLECTOR CURRENT (mAl
FIGURE 9 - COLLECTOR SATURATION REGION
~1.0
TJ' 2SoC
~o.a
II
Ic·1.0mA
~ 0.6
10mA
SOmA
~
1\ 100 mA
\
/' I--
V-
0.002 0.005 0.01 0.02
0.05 0.1 0.2
0.5 1.0 2.0
la. aASE CURRENT (mAl
S.O
10
o
o
20
FIGURE 11 - "ON" VOLTAGES
'"
~
1. 2
.§
~1.0
~
....
$
100
~
~
300,,",
I-- r--
2001
M
ro
~
w
I
I
~
~
~
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
"Applies for lells",hFEl2
JlU
40
.
1111
"BVe for VCE( ..tl
0
ill JJ
ill JJ
2SoC to 12SoC
Lll
JJ
w
§ -0.a
~
I I I 11111
2soe to
~ -1.6
~.
I - VCE(IIt1.lcIlB • 10
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mAl
50
r-- 'va for VSE
-2.4
0.1
100
1
0.2
LI
0.5
-550C to 250C
ill10 11
20
1.0
2.0
S.O
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-329
12~e
J...-1:
~
o.2
~
-S5 0C to 2SoC
8
!:i O.6
~ I - ~BE(rnIIQl>ml'II'O v
,.: O.
0.5
70
1001
oa
u
I-- ~BE(rtl QI> Iclla =10
0.2
50
SOO~
1.6
t- TJ =2SoC
co
30
FIGURE 12 - TEMPERATURE COEFFICIENTS
1.4
I
20
~
~
I/,
~ 0
0
0.1
Ila·
-
(/
~
:::I 0.2
...coW
4
10
--~
t----
~
~
5.0 7.0
t-:-: TA ~ 2SoC
Pulse Width· 300 III
Duty Cvcle '" 2.0%
'" 0.4
~O. a
w
3.0
FIGURE 10 - COLLECTOR CHARACTERISTICS
100
~tJ~J~
~
co
r~
i~~
- --
----
,
.~
~
r- ~
-55!C
..
,
--
........ ~
-
25lc
50
100
•
MPS3903, MPS3904
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 13 - TURN-ON TIME
300
200
100
70
FIGURE 14 - TURN-OFF TIME
,
I~R~ :~:V
TJ -25°C
~2Q
......
lei. VSE(olf) - 0.5 Vd,
10
""
~
It
:. 30
I"""0
3.0
1.0
2.0
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT (mA)
50
70
10
1.0
100
2.0
3.0
FIGURE 15 - CURRENT-GAIN - BANDWIDTH PRDDUCT
II II
ti
TJ·250C
1= 100 MHz
=>
g
300
g:
b
-- "",,
vrie-2JV
:z:
~
200
i!lz
'"
:li
z
......
~ P" 5.0 V
7.0
-
~5.0
....u
.........
z
...........
~
~3.0
-
~
r-
1"r-......,c0b
u'2.0
.1:0 SO
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC. COLLECTOR CURRENT (mA)
20
30
1.0
0.05
50
0.1
"
g5.0
I"to-
200
VCE" 10Vd,
f~
111111
10
_7.0
"
'" 100
~ 10
~
....
iil2.D
!!
......
MPS3903
iIta-l00IPIC -to mA
~
1.0
i! 0.7
10.5
D.2
0.1
D.2
0.5
I
r-..
"r-..
~
50
20
",
V
i
10
~ 7.0
5.0
j
50
-
3.0
2.0
0.1
100
0.2
MPS3903
hte~100.lc·l.OmA
I
0.5
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-330
~
hfe """2oo@le '" 1.0 mA
~
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT (mA)
20
MPS3904
50
~ 30
.......
D.3
0.5
1.0
2.0
5.0
10
YR. REVERSE VOLTAGE (VOLTS)
VCE" 10~d'
1= 1.0 kHz
TA = 25°C
100kHz
TA =25°C
MPS3904
hie ~ 200.IC=I.0mA
0.2
FIGURE 18 - DUTPUT ADMITTANCE
FIGURE 17 - INPUT IMPEDANCE
..
100
Cib
70
li1w
70
TJ m25OC.t
1= 1.0MHz
!i;
~
so
5.0 7.0 10
20 30
IC. COLLECTOR CURRENT (mA)
~
~100
a
I'
FIGURE 16 - CAPACITANCE
10
'"
:z: 500
I~R~ :~:V
If1 :~\~C
-
II
7.0
5.0
~
-
I,
300
:!50
•
1000
700
500
50
100
MPS3903, MPS3904
FIGURE 19 - THERMAL RESPONSE
10
0.7
0.5
UJ
~
~
0.3
~
5 0.2
in
-
D· 0.5
-'
..o!l
0.2
~
'CED
101
100
'CBO
AND
'CEX @ VBE(off) • 3.0 Vde -
8
10- 2
-40
+20
-20
+40
+60
+80
+100
+120
+140
+160
TJ, JUNCTION TEMPERATURE (DC)
Example:
The MPS3903 is dissipating 2.0 watts peak under the
following conditions:
tl = 1.0 ms, t2 = 5.0 ms_ (0 = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and 0 = 0.2,
the reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
LH = r(t) x P(pk) x ROJA = 0.22 x ,2,0 x 200 = aaoc.
For more information, see AN-569.
FIGURE 20
400
........
.'-- -..
200
0
j.-
1- ..
lOps
1. ;;;--.
t·· r'
...
TC 2--;C--
.......
100 .u~
~
1.0 s
e
de
0
TA' 25 0 C
de
0
0
....
,-
TJ'150 oC
-
-'-CURRENT LIMIT
-THERMAL LIMIT
SECONO BREAKOOWN LIMIT
6.0
4. 0
2.0
4.0
6.0
B.O 10
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
j---
-,
t---
-- t--.
--
40
The safe operating area curves indicate IC-VCE limits
of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve_
The data of Figure 20 is based upon T J(pk) = 150oC;
TC or T A is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)';;
150°C. TJ(pk) may be calculated from the data in Figure
19. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to
values less than the limitations imposed by second breakdown.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-331
•
MPS3906
MAXIMUM RAnNGS
Rating
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
COllecto; Current ~ Continuous
•
Symbol
IC
200
Vde
Total Device Dissipation @ TA
Derate above 25"C
= 25"C
Po
625
5.0
mW
mWf'C
Total Power Dissipation @ TA
= 6O"C
= 25"C
Po
450
mW
Po
1.5
12
Walta
mWrc
TJ, Tstg
-55 to +150
"C
Total Device Dissipation @ TC
Derate above 25"C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
JEl
'6
2
THERMAL CHARACTERISTICS
3
<::......
Symbol
Max
Unit
GENERAL PURPOSE
TRANSISTOR
Thermal Resistance, Junction to Case
R6JC
83.3
"crw
PNPSILICON
Thermal ReSistance, Junction to Ambient
R6JA
200
"CIW
Characteristic
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
= 25"C unless otherwise
noted.)
Characteristic
Max
Unit
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
40
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
ICEX
-
50
nAde
IBL
-
50
nAde
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 Vde, VBE(off)
= 3.0 Vde)
Base Cutoff Cu rrent
(VCE = 30 Vde, VBE(off)
= 3.0 Vde)
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 0.1 mAde, VCE = 1.0 Vde)
(lc = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde)
(lc = 100 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
60
80
100
50
30
-
-
300
-
Vde
-
-
0.25
0.4
Vde
0.65
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 V, f = 100 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-332
-
0.85
0.95
MPS3906
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, I = 100 kHz)
Cobo
-
4.5
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, I = 100 kHz)
Cibo
-
10
pF
Input Impedance
(lc = 1.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
hie
2.0
12
kohms
Voltage Feedback Ratio
(lc = 1.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
h re
1.0
10
X 10-4
Small-Signal Current Gain
(Ie = 1.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
hIe
100
400
Output Admittance
(Ie = 1.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
hoe
3.0
60
/Lmhos
Noise Figure
(lC = 100 /LAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 10 Hz to 15.7 kHz)
NF
-
4.0
dB
(VCC = 3.0 Vdc, VBE(off) = 0.5 Vdc
(lC = 10 mAdc, IB1 = 1.0 mAdc)
td
-
35
ns
tr
-
50
ns
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
ts
-
600
ns
tf
-
90
ns
,
-
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width
= 300/Ls, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-333
..
MPS4123
MPS4124
M~IMUM
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
RATINGS
Symbol MPS4123 MPS4124
Rating
Collector-Emitter Voltage
VCE
30
25
Vdc
Collector-Base Voltage
VCB
40
30
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
200
mAdc
Total Power Dissipation @ T A = 25"C
Derate above 25"C
Po
625
5.0
mW
mWrC
Total Power Dissipation @TC = 25"C
Derate above 25"C
Po
1.5
12
W
mWrC
TJ, Tstg
-55to +150
"C
Collector Current -
•
Unit
Continuous
Operating and Storage Junction
Temperature Range
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Charac:teriS1ic
I
NPNSILICON
Max
Thermal ResiS1ance, Junction to Ambient
ELECTRICAL CHARACTERISTICS
(TC
200
=
25"C unless otherwise noted.)
Charac:teristic
Symbol
Min
30
25
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mA, IB = 0)
MPS4123
MPS4124
V(BR)CEO
Collector-Base Breakdown Voltage
(lC = 10 pA, IE = 0)
MPS4123
MPS4124
V(BR)CBO
= 0, IE =
= 0)
= 3.0 V, IC = 0)
Emitter-Base Breakdown Voltage (lC
Collector Cutoff Current (VCB
Emitter Cutoff Current (VEB
=
10 pAl
Vdc
-
Vdc
30
-
5.0
-
Vdc
ICBO
-
50
nAdc
lEBO
-
50
nAdc
V(BR)EBO
20 V, IE
40
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 mA, VCE
(lc
-
hFE
=
1.0 V)
= 50 mA, VCE =
1.0 V)
50
120
25
60
MPS4123
MPS4124
MPS4123
MPS4124
150
360
-
Collector-Emitter Saturation Voltage
(lC = 50 mA, IB = 5.0 mAl
VCE(sat)
-
0.3
Vdc
Base-Emitter Saturation Voltage
(lC = 50 mA, IB = 5.0 mAl
VBE(sat)
-
0.95
Vdc
fr
100
170
MHz
Cob
-
4.0
pF
MPS4123
MPS4124
Cib
-
14
13.5
pF
MPS4123
MPS4124
hie
50
120
200
480
-
-
6.0
5.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 rnA. VCE = 20 V, f = 100 MHz)
Output Capacitance
(VCB = 5.0 V, IE = 0, I
Input Capacitance
(VBE = 0.5 V, IC
=
100 kHz)
= 0, I =
100 kHz)
Small-Signal Current Gain
(lc = 2.0 rnA, VCE = 1.0 V, f
=
1.0 kHz)
Noise Figure
(lC = 100 pA, VCE = 5.0 V, RS = 1.0 kO,
Noise Bandwidth = 10Hz to 15.7 kHz)
MPS4123
MPS4124
NF
MPS4123
MPS4124
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-334
dB
MPS4125
MPS4126
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol MPS4125 MPS4126
Unit
Collector-Emitter Voltage
VCE
30
25
Collector-Base Voltage
VCB
30
25
Emitter-Base Voltage
VEB
4.0
Vdc
IC
200
mAdc
Total Power Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
W
mWrC
TJ, Tstg
-55to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
Vdc
Vdc
3 Collector
~.~
1 Emitter
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Max
Characteristic
Thermal Resistance, Junction to Ambient
I
PNP SILICON
ELECTRICAL CHARACTERISTICS (TC
200
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 rnA, IB = 0)
MPS4125
MPS4126
V(BR)CEO
30
25
Collector-Base Breakdown Voltage
(lC = 10 pA, IE = 0)
MPS4125
MPS4126
V(BR)CBO
30
25
V(BR)EBO
4.0
= 0, IE =
= 20 V, IE = 0)
= 3.0 V, IC = 0)
Emitter-Base Breakdown Voltage (lC
10 pAl
Collector Cutoff Current (VCB
ICBO
Emitter Cutoff Current (VEB
lEBO
-
-
Vdc
Vdc
Vdc
50
nAdc
50
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 2.0 rnA, VCE
(lc
=
= 50 rnA, VCE =
hFE
MPS4125
MPS4126
MPS4125
MPS4126
1.0 V)
1.0 V)
50
120
25
60
150
360
-
-
Collector-Emitter Saturation Voltage
(lC = 50 mA, IB = 5.0 rnA)
VCE(sat)
-
0.4
Vdc
Base-Emitter Saturation Voltage
(lC = 50 rnA, IB = 5.0 rnA)
VBE(sat)
-
0.95
Vdc
tr
150
170
Cob
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 rnA, VCE = 20 V, I = 100 MHz)
Output Capacitance
(VCB = 5.0 V, IE = 0, f
Input Capacitance
(VBE = 0.5 V, IC
=
100 kHz)
= 0, I =
100 kHz)
Small-Signal Current Gain
(lc = 2.0 rnA, VCE = 1.0 V, f
=
1.0 kHz)
Noise Figure
(lC = 100 pA, VCE = 5.0 V, RS = 1.0 kG,
Noise Bandwidth = 10 Hz to 15.7 kHz)
MPS4125
MPS4126
MPS4125
MPS4126
Cib
MPS4125
MPS4126
hIe
4.5
pF
-
-
12
11.5
pF
50
120
200
480
-
5.0
4.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-335
dB
NF
MPS4125
MPS4126
MHz
•
MPS4249
MPS4250
MAXIMUM RATINGS
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Emitter Voltage
VCES
40
60
Vdc
Collector-Base Voltage
VCBO
40
60
Vdc
Emitter-Base Voltage
•
MPS4249
MPS4250 MPS4250A
VEBO
5.0
5.0
Vdc
Po
625
5.0
625
5.0
mW
mWf'C
1.5
12
1.5
12
mW
mWf'C
Total Device Dissipation @ TA
Derate above 25·C
= 25·C
Total Device Dissipation @ TC
Derate above 25·C
= 25·C
Po
Total Device Dissipation @ TC
Derate above 100·C
=
Po
l00·C
CASE 29-04, STYLE 1
TO-92 (TO-226AA) .
3 Collector
":~
1 Emitter
TJ, Tstg
-55to +125
·C
Junction Temperature
TJ
125
·C
Lead Temperature (10 seconds)
TL
260
·C
Operating and Storage Junction
Temperature Range
TRANSISTORS
ELECTRICAL CHARACTERISTICS
(TA
=
PNP SILICON
25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
60
40
-
40
60
-
40
60
-
-
5.0
-
-
-
10
10
3.0
-
20
100
100
250
100
250
300
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 pAl
(lC = 5.0 mAl
MPS4249
MPS4250
Collector-Emitter Sustaining Voltage(l)
(lC = 5.0)
(lC = 5.0)
MPS4250
MPS4249
Collector-Base Breakdown Voltage
(lC = 10 pAl
(lC = 10 pAl
MPS4250
MPS4249
V(BR)CES
Collector Cutoff Current
(VCB = 40 V)
(VCB = 50 V)
(VCB = 40 V, TA = 65·C)
Vdc
V(BR)CEO(sus)
Vdc
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 pAl
V(BR)EBO
ICBO
MPS4249
MPS4250
MPS4249, MPS4250
Emitter Cutoff Current
(VBE = 3.0 V)
lEBO
Vdc
Vdc
nA
nA
ON CHARACTERISTICS
DC Current Gain
(lC = 100 pA, VCE = 5.0 V)
(lc = 1.0 mA. VCE = 5.0 V)
(lc = 1.0 mA, VCE = 5.0 V)
(lc = 10 mA, VCE = 5.0 V)
(lc = 10 mA, VCE = 5.0 V)
-
hFE
MPS4249
MPS4249
MPS4250
MPS4249
MPS4250
-
Collector-Emitter Saturation Voltage(l)
(lC = 10 mA, IB = 0.5 mAl
VCE(sat)
-
0.25
Vdc
Base-Emitter Saturation Voltage(l)
(lc = 10 mA, IB = 0.5 mAl
VBE(sat)
-
0.9
Vdc
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 V, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-336
MPS4249. MPS4250
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Characteristic
Input Capacitance
(VBE = 0.5 V, f = 1.0 MHz)
Small-Signal Current
(lC = 1.0 mA. VCE
(lc = 1.0 mA. VCE
(lc = 0.5 mA. VCE
Gain
= 5.0 V, f = 1.0 kHz)
= 5.0 V, f = 1.0 kHz)
= 5.0 V, f = 20 MHz)
= 300 J'os, Duty Cycle =
Min
Max
Unit
Cibo
-
16
pF
hfe
100
250
2.0
MPS4249
MPS4250,A
MPS4249,50
Noise Figure
(lC = 20 J'oA, VCE = 5.0 V, RS = 10 k!l,
f = 1.0 kHz, PBW = 150 Hz)
(lc = 20 JJ.A, VCE = 5.0 V, RS = 10 k!l,
f = 1.0 kHz, PBW = 150Hz)
(lc = 250 JJ.A, VCE = 5.0 V, RS = 1.0 k!l,
f = 1.0 kHz, PBW = 150 Hz)
(lc = 250 JJ.A, VCE = 5.0 V, RS = 1.0 kG,
f = 1.0 kHz, PBW = 150 Hz)
(1) Pulse Test: Pulse Width
Symbol
500
BOO
dB
NF
MPS4249
-
3.0
MPS4250,A
-
2.0
MPS4249
-
3.0
MPS4250,A
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-337
-
2.0
•
MPS4258
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.5
Vdc
IC
80
mAde
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
12
mW
mW/"C
Total Device Dissipation @ TC
Derate above 25°C
=
Po
1.5
12
Watts
mW/"C
TJ, Tstg
-55 to +150
°c
Symbol
Max
Unit
R9JC
83.3
°CIW
R9JA
200
°CIW
25°C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~~
1 Emitter
THERMAL CHARACTERISTICS
SWITCHING TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PNPSILICON
Refer to MPS3840 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Coliector·Emitter Breakdown Voltage(l)
(lC = 100 /lAde, VBE = 0)
V(BR)CES
12
-
Vde
Collector-Emitter Sustaining Voltage(l)
(lC = 3.0 mAde, IB = 0)
VCEO(sus)
12
-
Vde
Collector-Base Breakdown Voltage
(lc = 100 ,",Ade, IE = 0)
V(BR)CBO
12
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100/lAde, IC = 0)
V(BR)EBO
4.5
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 6.0 Vde, VBE = 0)
(VCE = 6.0 Vde, VBE = 0, TA
ICES
=
/lAde
-
-
+ 65°C)
0.01
5.0
ON CHARACTERISTICS(I)
DC Current Gain
(lC = 1.0 mAde, VCE = 0.5 Vde)
(lC = 10 mAde, VCE = 3.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
15
30
30
120
-
0.15
0.5
-
Vde
Vdc
0.75
-
0.95
1.5
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
=
Cibo
0, f
=
1.0 MHz)
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
1.0 MHz)
Ceb
700
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-338
-
MHz
3.5
pF
3.0
pF
MPS4258
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°e unless otherwise noted.)
I
Characteristic
Min
Symbol
Max
Unit
SWITCHING CHARACTERISTICS
Turn-On Time
(Vee = 1.5 Vde,
V8E(off) = 0,
Ie = 10 mAde, 181
Delay Time
Rise Time
Turn-Off Time
=
1.0 mAde)
Fall Time
Storage Time
(Ie = 10 mAde, 181 = 10 mAde, 182
-
15
ns
td
-
10
ns
15
ns
20
ns
20
ns
10
ns
20
ns
-
tr
toff
(Vee = 1.5 Vde,
Ie = 10 mAde,
181 = 182 = 1.0 mAde)
Storage Time
ton
tf
-
ts
-
ts
= 10 mAde)
(1) Pulse Test: Pulse W,dth "" 300 p.s, Duty Cycle"" 2.0%.
(2) tr is defined as the frequency at which Ihfel extrapolates to unity.
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
Vss
Vee
Rl
R2
Vout
O.I.F
V,"~
Zin=50n
tr<1.0n$
tw = 240 ns
50n
R3
t r < 1.0n$
VSB
Volts
Vee
Volts
'e
'Bl
'S2
Ohms
R2
Ohms
R3
Volts
Ohms
rnA
rnA
rnA
-S.8
+9.8
+9.0
GNO
-8.0
-10
-1.S
-1.S
-3.0
130
130
270
2.2 k
2.2 k
S10
Sk
Sk
390
10
10
10
1.0
1.0
10
1.0
10
Vin
l,n" 100 kn
'on
toft
Is
Rl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-339
-
•
MPS5179
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
20
Vde
Emitter-Base Voltage
VEBO
2.5
Vde
IC
50
mAde
Total Device Dissipation @TA = 25'C
Derate above 25'C
Po
200
1.14
mW
mWrC
HIGH FREQUENCY TRANSISTOR
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
300
1.71
mW
mWrC
NPN SILICON
Tstg
-55 to +150
'c
Collector Current -
Continuous
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Max
Symbol
Min
Collector-Emitter Sustaining Voltage
(lC = 3.0 mAde, IB = 0)
VCEO(sus)
12
-
Vde
Collector-Base Breakdown Voltage
(lC = 0.001 mAde, IE = 0)
V(BR)CBO
20
-
Vde
Emitter-Base Breakdown Voltage
(IE = 0.Q1 mAde, IC = 0)
V(BR)EBO
2.5
-
Vde
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
(VCB = 15 Vde, IE = 0, TA = 150'C)
ICBO
!JAde
-
0.02
1.0
25
250
-
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
1.0
Vde
tr
900
2000
MHz
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, 1= 0.1 to 1.0 MHz)
Ceb
-
1.0
pF
Small Signal Current Gain
(lc = 2.0 mAde, VCE = 6.0 Vde, I = 1.0 kHz)
hIe
25
300
-
rb'C e
3.0
14
ps
-
5.0
dB
15
-
dB
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC = 5.0 mAde, VCE = 6.0 Vde, I = 100 MHz)
Collector Base Time Constant
(IE = 2.0 mAde, VCB = 6.0 Vde, 1= 31.9 MHz)
Noise Figure (See Figure 1)
(lc = 1.5 mAde, VCE = 6.0 Vde, RS = 50 ohms, 1= 200 MHz)
NF
Common-Emitter Amplifier Power Gain (See Figure 1)
(VCE = 6.0 Vde, IC = 5.0 mAde, I = 200 MHz)
Gpe
(1) tr is delined as the Irequeney at which Ihlel extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-340
MPS5179
FIGURE 1 - 200 MHz AMPLIFIER POWER GAIN
AND NOISE FIGURE CIRCUIT
TYPE
lN3195
DC
COMMON
•
)
II 1·3/4 Turns. #18 AWG. 0.5" l. 0.5" Diameter
l2 2 Turns. #16 AWG. O.S"l. 0.5" Diameter
l3 2 Turns. #13 AWG. 0.25" l. 0.5" Diameter (Position 1/4" from l2)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-341
MPS6507
MAXIMUM RATINGS
Rating
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25"C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
mwrc
Collector Current -
•
Symbol
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
,
Watt
-55to +150
I
3CoII.ctor
1
°C
2LY\
B.S~
23
THERMAL CHARACTERISTICS
Charactarlstlc
Symbol
Max
Unit
R8JC
83.3
R8JA(I)
200
°CIW
0c/w
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1 Emitter
AMPLIFIER TRANSISTOR
NPN SILICON
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(YCB = 15 Vde, IE = 0)
(VCB = 15 Vde, IE = 0, TA
3.0
-
-
-
-
SO
1.0
nAde
pAdc
tr
700
800
-
MHz
Cobo
-
1.25
2.5
pF
hfe
20
-
-
ICBO
= SOOC)
Vde
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 2.0 mAde, VCE
=
10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f = 100 kHz)
Small-Signal Current Gain
(lC = 2.0 mAde, VCE = 10 Vdc, f
= 44 MHz)
(2) Pulse Test: Pulse W,dth..; 300 p.s, Duty Cycle..; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-342
-
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MPS6520, MPS6521
MPS6523
VCEO
Collector-Base Voltage
MPS6520, MPS6521
MPS6523
VCBO
Emitter-Base Voltage
VEBO
Collector Current -
Continuous
NPN
PNP
Unit
Vde
-
25
-
25
Vde
-
40
-
3 Collector
~()
1 Emitter
25
4.0
Vde
IC
100
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mWf'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5.
12
Watts
mWf'C
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
NPN
MPS6520
MPS6521
3 Collector
PNP
MPS6523
~~
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
Characteristic
R(JJA
200
0c/w
Thermal Resistance, Junction to Case
R(JJC
83.3
0c/w
I •
1 Emitter
\
3
AMPLIFIER TRANSISTORS
Refer to MPS3903 for NPN graphs."
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 0.5 mAde, iB = 0)
(lC = 0.5 mAde, IB = 0)
V(BR)CEO
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
(IE = 10 !lAde, IC = 0)
V(BR)EBO
25
25
4.0
4.0
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 20 Vde, IE = 0)
ICBO
-
Vde
Vdc
!lAde
-
0.05
0.05
ON CHARACTERISTICS
DC Current Gain
(lc = 100 !lAde, VCE
hFE
-
=
10 Vdc)
MPS6520
MPS6521
100
150
(lC
= 2.0 mAde, VCE =
10 Vde)
MPS6520
MPS6521
200
300
400
600
(lC
=
=
10 Vde)
MPS6523
150
-
(lc
= 2.0 mAde, VeE =
10 Vde)
MPS6523
300
400
-
0.5
0.5
100 !lAde, VCE
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
-
-
Vde
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE
(VCB = 10 Vde, IE
= 0, I =
= 0, I =
Cobo
100 kHz)
100 kHz)
Noise Figure
(lC = 10 !lAde, VCE = 5.0 Vde, RS = 10 kohms,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
(Ie = 10 !lAde, VeE = 5.0 Vde, RS = 10 kohms,
Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz)
NF
-
-
3.0
-
3.0
"ReIer to 2N5086 lor PNP graphs.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-343
pF
3.5
3.5
dB
MPS6530
MPS6531
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
IC
600
mAde
Po
625
mW
TJ, Tstg
150
·C
3 Collector
~~
1 Emitter
Junction Temperature
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to 2N4400 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, 18 = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage
(lc = 10 ~dc,IE = 0)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage
(lB = 10~de,IC = 0)
(lB = 10 ~de, IC = 0)
V(BR)EBO
5.0
4.0
-
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 40 Vde, IE = 0, TA
ICBO
Vde
-
= 60'C)
~de
0.05
2.0
ON CHARACTERISTICS
DC Current Gain
(lC = 10mAde,VCE
(lc
(lC
=
=
100 mAde, VCE
hFE
1.0Vde)
=
= 500 mAde, VCE =
1.0 Vde)
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
30
60
MPS6530
MPS6531
90
120
270
MPS6530
MPS6531
25
50
-
-
0.5
0.3
4li
VCE(sat)
MPS6530
MPS6531
Base-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VBE(sat)
= 0, f =
= 0, f =
-
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-344
-
Vde
SMAU-SIGNAL CHARACTERISTICS
Output Capacitance
(Vce = 10 Vde, IE
(VCB = 10 Vde, IE
-
MPS6530
MPS6531
1.0
Vde
MPS6534
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
Collector-Emitter Voltage
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature
IC
600
mAde
Po
625
mW
TJ, Tstll
150
°c
I
3Coilecto,
,
1
2J?\
Ba5~
23
•
1 EmItter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
Thermal Resistance, Junction to Ambient
Refer to 2N4402 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 !LAde, IE = 0)
V(BR)CBO
40
-
Vde
Emitter-Base Breakdown Voltage
(lB = 10 /LAde, IC = 0)
(lB = 10 !LAde, IC = 0)
V(BR)EBO
5.0
4.0
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
(VCB = 20 Vde, IE = 0, TA
ICBO
= 60°C)
= 60°C)
-
Vde
/LAde
0.05
2.0
-
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 10 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
Base-Emitter Saturation Voltage
(lc = 100 mAde, IB = 10 mAde)
= 0, f =
= 0, f =
VCE(sat)
-
0.3
Vde
VBE(sat)
-
1.0
Vde
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-345
-
270
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE
(VCB = 10 Vde, IE
-
60
90
50
-
3 Collector
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
625
5.0
mW
mWI"C
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.5
12
Watts
mWI"C
TJ, Tstg
-55to +150
°c
Symbol
Max
Unit
R9JC
83.3
°ClmW
R9JA(l)
200
°C/mW
Operating and Storage Junction
Temperature Range
NPN
MPS6560
PNP
MPS6562
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1 Emitter
~()"-
'1
1 Emitter
CASE 29-04, STYLE
TO-92 ITO-226AA)
THERMAL CHARACTERISTICS
Characteristic
~()
1
23
AUDIO TRANSISTORS
(1) R9JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
25
Collector-Base Breakdown Voltage
(lC = 100 !LAde, IE = 0)
V(BR)CBO
25
Emitter-Base Breakdown Voltage
(IE = 100 !LAde, IC = 0)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 25 Vde, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEBloff) = 4.0 Vde, IC
lEBO
= 0)
-
-
Vdc
Vdc
Vdc
100
nAde
100
nAde
100'
nAde
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vdc)
(lC = 100 mAde, VCE = 1.0 Vdc)
(lC = 500 mAde, VCE = 1.0 Vd~)
hFE
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Bese-Emitter On Voltage
(lC = 500 mAde, VCE = 1.0 Vde)
VBE(on)
-
for
Cobo
35
50
50
-
-
200
0.5
Vde
1.2
Vdc
60
-
MHz
-
30
pF
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vdc, f = 30 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
100 kHz)
(2) Pulse Test: Pulse Width"" 300 /£S, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-346
MPS6568A
thru
MPS6570A
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vde
Collector-Base Voltage
VCBO
20
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
350
2.8
mW
mWrC
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
1.0
8.0
Watt
mWrC
TJ, Tstg
-55to +150
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
1/~()"2
..
2 Emitter
3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case(l)
Characteristic
R8JC
83.3
·CIW
Thermal Resistance, Junction to Ambient
R8JA
200
·CIW
VHF TRANSISTORS
NPN SILICON
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS
(TA = 25·C unless otherwise noted.)
Max
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
3.0
-
ICBO
-
50
hFE
20
200
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAde)
VCE(sat)
0.1
3.0
Vdc
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAde)
VBE(sat)
-
0.96
Vdc
375
300
600
600
-
0.65
-
-
3.3
6.0
20
22.5
27
28.5
4.0
4.4
5.2
5.0
5.4
6.2
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vdc, IC = 0)
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISncs
DC Current Gain
(lC = 4.0 mAde, VCE
=
-
5.0 Vdc)
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
=
100 MHz)
MPS6568A
MPS6569A. MPS6570A
tr
Ccb
1.0 MHz, emitter guarded)
Noise Figure
(VAGC = 1.4 Vdc, RS = 50 ohms, f = 200 MHz)
(VAGC = 2.75 Vdc, RS = 50 ohms, f = 45 MHz)
MHz
pF
MPS6568A16570A
NF
MPS6568A
MPS6569A, MPS6570A
dB
FUNCTIONAL TEST
Amplifier Power Gain
(VAGC = 1.4 Vdc, RS = 50 ohms, f = 200 MHz)
(VAGC = 2.75 Vdc, RS = 50 ohms, f = 45 MHz)
Forward AGC Voltage
(Gain Reduction = 30 dB, RS
(Gain Reduction = 30 dB, RS
=
=
50 ohms, f
50 ohms, f
= 200 MHz)
= 45 MHz)
Gpe
MPS6568A
MPS6569A, MPS6570A
dB
Vdc
VAGC
MPS6568A
MPS6569A
MPS6570A
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-347
MPS6568A thru MPS6570A
AGC CHARACTERISTICS
Vee
FIGURE 1 -
~
12 Vdc, R,
~
50 OHMS, SEE FIGURES 9 AND 10
- - f~200MHz
-f~45MHz
POWER GAIN
25
V
/
~
20
~
15
i
•
I
NOISE FIGURE
'" '\
.. \
I
\
1/
55
1\\
1\
V
\
'"
'"~
I
\
..:
z:
~
\
f\
1.0
2.0
3.0
4.0
5.0
VAGC. AUTOMATIC GAIN CONTRO L VOLTAGE (VOLTSI
FIGURE 3 -
I
~
'"'"
;:;:
\
11
tI
10
:g
w
\
IJ
o
.
12
.........
! II
10
-5
FIGURE 2 -
14
30
6.0
o
o
II
J
---
1.0
2.0
3.0
4.0
5.0
VAGC, AUTOMATIC GAIN CONTROL VD-LTAGE (VOLTS)
FIGURE 4 -
200 MHz FUNCTIONAL TEST CIRCUIT
(NEUTRALIZED)
...
/ ./
I
6.0
45 MHz FUNCTIONAL TEST CIRCUIT
(UNNEUTRALIZED)
VAGe
2.2kn
,.W
RF BEADS
It',""·
II
50U
OUTPUT
!.OpF
5011
INPUT
I~
2.2 kll
,.W
HI-F-'--....
RFBEADS
1000pF
>----Ir--€)
0.7-10 pf
0.7-10pf
820 pf
1000 pf
39011
,.W
l'
I
T, = FERRITE CORE INDIANA GEN. CORP. F-684
T, ~ 6 TURNS #16 BUSS WIRE, 10 ~ W', L ~ W'.
T, = TOROID U RATIO} #22 WIRE
8T·PRI 2T-SEC
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-348
SOU
OUTPUT
MPS6571
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CASE 29-04, STYLE 1
TO-92 (TO-226AAI
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Base Voltage
VCBO
25
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 2SoC
Po
1.S
12
Watts
mW/oC
TJ, Tstg
-55 to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
3 Collector
~~
•
, Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
NPNSILICON
Unit
Thermal Resistance, Junction to Ambient
RruA
200
"e1W
Thermal Resistance, Junction to Case
RruC
83.3
°CIW
Refer to MPSA18 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 2SOC unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc,lB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 100 !tAdc, IE = 0)
V(BR)CBO
25
Characteristic
Typ
Max
-
lEBO
-
-
hFE
2S0
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC
ICBO
= 0)
Vdc
Vdc
SO
nAdc
SO
nAdc
-
1000
-
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !tAdc, VCE
= S.O Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
-
0.5
Vdc
Base-Emitter On Voltage
(lc = 10 mAde, VCE = S.O Vdc)
VBE(on)
-
-
0.8
Vdc
IT
SO
175
-
MHz
-
-
4.5
pF
1.2
-
dB
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 !tAdc, VCE = 5.0 Vdc, f
Output Capacitance
(VCB = S.O Vdc, IE
= 0, f =
Noise Figure
(lC = 100 !tAdc, VCE
= 20 MHz)
Cobo
100 kHz)
= 5.0 Vdc,
RS
=
"
10 kohms, f
=
100 Hz)
NF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-349
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
Vde
VCEO
25
40
MPS6601/6651
MPS6602/6652"
Collector-Base Voltage
Vde
VCBO
25
30
MPS6601/6651
MPS6602/6652
Emitter-Base Voltage
Collector Current -
•
Unit
Continuous
VEBO
4.0
Vde
IC
1000
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.5
12
Watts
mWrC
TJ, Tstg
-55to +150
·C
Symbol
Max
R6JC
83.3
Unit
.c/w
R6JA(1)
200
'CIW
Operating and Storage Junction
Temperature Range
NPN
MPS6601
MPS6602
PNP
MPS6651
MPS6652
3 Collector
~.~
1 Emitter
3 Collector
.~()
1 Emitter
CASE 29-04, STYLE 1 /
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
AMPLIFIER TRANSISTORS
(1) R6JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
25
40
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
VIBR)CEO
MPS6601/6651
MPS6602/6652
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCE = 25 Vde, IB = 0)
(VCE = 30 Vde, IB = 0)
25
40
V(BR)EBO
ICEO
MPS6601/6651
MPS6602/6652
Collector Cutoff Current
(VCB = 25 Vde, IE = 0)
(VCB = 30 Vde, IE = 0)
Vde
V(BR)CBO
MPS6601/6651
MPS6602/6652
4.0
-
ICBO
MPS6601/6651
MPS660216652
Vde
-
-
Vde
pAde
0.1
0.1
..
pAde
-
0.1
0.1
50
50
30
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vde)
(Ie = 500 mAde, VeE = 1.0 Vde)
(lC = 1000 mAde, VeE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 1000 mAde, IB = 100 mAde)
VCE(sat)
Base-Emitter On Voltage
(Ie = 500 mAde, VCE = 1.0 Vde)
VBE(on)
-
f,Cobo
-
-
0.6
Vde
1.2
Vde
100
-
MHz
-
30
pF
25
ns
30
ns
250
ns
50
ns
SMAU-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE = 10 Vde, f = 30 MHz)
Output Capacitance
(VeB = 10 Vde, Ie
= 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Id
(VCC = 40 Vde, IC = 500 mAde,
IBI = 50 mAde,
tp ;. 300 ns Duty Cycle)
tr
t.
Fall Time
tf
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-350
NPN MPS6601, MPS6602, PNP MPS6651, MPS6652
FIGURE 1 - SWITCHING TIME TEST CIRCUITS
Turn-off Time
Vee
-1.0V
+VS8
+40V
100
-,L-1r
---1
Vm
~"F
100
".1--
5 .0
RS
•
tr"" 3.0 ns
·Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
PNP
NPN
FIGURE 2 - MPS6601 /6602 DC CURRENT GAIN
FIGURE 3 - MPS6651 /6652 DC CURRENT GAIN
30 0
200
20 0
l"-
t---..
0
'"
....
~
13
0
;
1'-1\
Or-- t-r-- t-0
10
70
50 r - J-- t- VCE = 1.0 V
r- t-- t- TJ = 25°C
VCE=1.0V
TJ = 25°C
II
100
IC. COLLECTOR CURRENT (rnA)
20
1000
~ 200
,- ~
""~
%
i
z
~
.
Z
100
/
CURRENT GAIN BANDWIDTH PRODUCT
300
~
....
I-- I-
~ 200
......-~
""
~
~
V
~
~
70
-
50
-
ll§
Z
~
VCE=lOV
f - TJ = 25°C
1= 30 MHz
t--
V
100
70
'--
-
~ 50 ' - - -
ll§
:::>
'-'
~
1000
2:
'"
~
FIGURE 5 -
:;2
300
....~
100
IC. COLLECTOR CURRENT (rnA)
10
FIGURE 4 - CURRENT GAIN BANDWIDTH PRODUCT
:;2
- I"-r-
~ 100
VCE=10V
TJ = 25°C
f = 30 MHz
13
30
10
.t:-
100
200
IC. COLLECTOR CURRENT (rnA)
1000
30
10
100
200
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-351
1000
NPN MPS6601, MPS6602, PNP MPS6651, MPS6652
FIGURE 6 - ON VOLTAGES
1.0
FIGURE 7 - ON VOLTAGES
1.0
11111 I I I I 11111
TJ; 25°C
TJ = 25°C
VaE(SAT) @ Ic/la = 10
0.8
0.8
11111 Il...H:±mIl-
~
...
I 11111
~
~
~m=:;ll' J\I~I~
~ 0.6
11111
III
VBE( SAT) @IC/IB = 10
~O.6
VaE (ON)
J--H11J
till!.
@IV~E = 1.0 V
w
~
!:l
to
g
~> 04
0.4
:>
:>
I~CIEIWAT)
0.2
@ IC liB ~
02
IIDllIl1
o
1.0
10
VCE (S~~) @IC liB = 10
U/ I
o
100
1000
IC. COLLECTOR CURRENT (mA)
10
1.0
11111
100
1000
IC. COLLECTOR CURRENT (mA)
NPN
PNP
FIGURE 9 - CAPACITANCE
FIGURE 8 - CAPACITANCE
160
80
TJ = 25°C
TJ = 25°C
........
~ 60
r--...
--
I'--.
~ 120
r---
C,b-
1"'-..
........
-
-
I--
1\
40
'-.. r--
0"-.
r-- r--
C,b- - -
Cob-
-
Cob
50
10
10
15
20
30
VR. REVERSE VOLTAGE (VOLTS)
20
40
25
50
50
10
FIGURE 10- MPS6601/6602 NOISE FIGURE
10
~
II
\
w
'"~
...'"
'"
25
20
40
FIGURE 11 - MPS6651/6652 NOISE FIGURE
10
VCE=50V
f = 1.0 kHz
TA = 25°C
8.0
15
10
30
20
VR. REVERSE VOLTAGE (VOLTS)
1111 I III
'VCE = 5.0 V
f = 1.0 kHz
TA = 25°C
80
6.0
i\
\
IC = 100 MA
'"
~
z 40
..:
z
2.0
IC=100MA
4.0
\
20
r-
o
10
100
1k
Rs. SOURCE RESISTANCE (OHMS)
o
10k
10
I'100
1k
10k
Rs. SOURCE RESISTANCE (OHMS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-352
25
50
NPN MPS6601, MPS6602, PNP MPS6651, MPS6652
FIGURE 13 - MPS6651 16652 SWITCHING TIMES
FIGURE 12 - MPS6601/6602 SWITCHING TIMES
10 k
10k
Id @ VBE(_fll - 0.5 V
VCC 40 V
IC/IB =10
IBI =la2
TJ - 25°C
k
k
.,
k
~ 500
~
200
100
3k
k
l[500
I,
l'""-
~
Id @ VaE(_HI = 0.5 V
VCC = 40 V
Iclla - 10
IBI = IB2
TJ = 25°C
5k
~
I-...
-i-. I,
..........
~200
100
50
II
20
10
10
Ir
20
Id
500
50
100
200
IC. COLLECTOR CURRENT (mAl
It=
50
......
20
10
10
1000
t--I..
500
50
100
200
IC. COLLECTOR CURRENT (mAl
20
Ir
Id
1000
PNP
NPN
FIGURE 14 - BASE-EMITIER TEMPERATURE COEFFICIENT
FIGURE 15 - BASE-EMITIER TEMPERATURE COEFFICIENT
-08
-0.8
gE -12.
~
~ -1.6
8
~
ROV81or V8E
ROV8 _rV8E
'
~ -2.0
I!
-24
-2.8
10
1.0
-28
100
1000
IC. COLLECTOR CURRENT (mAl
FIGURE 16 - SAFE OPERATING AREA
k
ffi
~
_ 500
..:
'-'
'"
t3
~
8
.§.
!z
1.0',
200
"
TC = 25°
50
~
20
10
1.0
--------2.0
~-+--+-+-+-'J.--..1!.......-+jo·,-I--+-'\.\c\-+--+-+-++~
~ 200~-+--~-+~~-f~~~~4--+~~-+~-I-~~
I'.
100
m_ _
1.0 MS
1.0 MS
.§.
:i!
100
1000
IC. COLLECTOR CURRENT (mAl
FIGURE 17 - SAFE OPERATING AREA
k
:;c 50 0
10
10
I'..
\
13
TC • 25°C
...... ' "
1\
~ 100!~~~~~~~~:!!!~~1l!!1!1-1!~1!!
II
bi
~
MPS6601
MPS6602
50
I
~
-
Current limit
I
-
-
o - - - -
Thermal limit
MPS6651
MPS6652
Current limit·
Thermal
Llmit'+I---l--l-l--l--l-+++++l
- - - - Second Breakdown limit
Second Breakdown Limit
1~LO-~J2~0-L-~5~0~~~'~0-~~20~~-4~0~-LLLW
5.0
10
20
40
VCE COLLECTOR - EMITTER VOLTAGE
VCE COLLECTOR· EMITTER VOLTAGE
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-353
•
NPN MPS6601, MPS6602, PNP MPS6651, MPS6652
FIGURE 18 - MPS6601/6602 SATURATION REGION
FIGURE 19 - MPS6651 16652 SATURATION REGION
1.0
1.0
g
II III
:\
~ 0.8
.
..""
.
TJ = 25°C
~
~
~
~
~ 0.6
"
gEI
,. M"
g
"co
EI
EI
,.
"
;;;
~ 0.4
8
,.EI
~
n
~ 0.2
•
..
",I
N.
"
g
.
M
\I
EI
0.8
~
!:i 0.6
>
M
M
M
\
t;
~"'4
~
"
;;;
0.4
0.1
1.0
10
100
0.1
lB. BASE CURRENT (rnA)
EI
".
TJ = 25°C
~
g
M
"~
..
EI
~1"
!tt...
III
~
IIIr
0.01
"
g
,:" \
hl
I!JII
o
0.01
"
;;;
co
"
".
"
I~I
w
1;: 0.2
o
M-
'"
n
'-'
1-
."
LIJ LUI
"
M
n
'"
~
1\
\
1.0
10
100
lB. BASE CURRENT (mA)
FIGURE 20 - THERMAL RESPONSE
~
~
"'~
!:!i
>""
fi!1i
~f3
1. 0
O. 7f=0=0.5
O. 5
-
0.1
~'"
~ ~ D. 1 0.05
~ ~O.O 7 :0.0
~ ~O.05 2
i'"
:g:
0.03
0.02
....
0.0 1
0.001
.-
.-
O. 31-- 0.12
O. 2
;2!::il
-
~Singl,Pulse
.01
J~
.... r-
~
- .-JlJ1-Plpk)
-L
~~
Single Pulse
0.002
II I
0.005
0.01
- -
Duty Cycle. D= tl/t2
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t TIME (SECONDS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-354
RAielU = IU Ale
RAie = 111O"C!r'1 Max
RAlAI1Id = rlt) AlA
RAiA = 367"CW Max
ocurvlS apply for power
pu)•• IIain shown
raid time at t1
TJ(pk) - TC = P(pk) 8JC(t)
10
20
50
100
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
MPS6714
MPS6715
VCEO
Collector-Base Voltage
MPS6714
MPS6715
VCBO
Emitter-Base Voltage
VEBO
5.0
IC
1.0
Adc
PD
1.0
8.0
Watt
mWrC
PD
2.5
20
Watts
mWrC
TJ, Tstg
-55 to +150
'c
Collector Current -
MPS6714
MPS6715
Vdc
30
40
Vdc
40
50
Continuous
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
Vdc
3 Collector
~~
•
1 EmItter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
'cm
'cm
Thermal Resistance, Junction to Case
RruC
50
Thermal Resistance, Junction to Ambient
RruA
125
ONE WATT
AMPLIFIER TRANSISTORS
NPNSILICON
Refer to MPSW01 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !LAde, IE = 0)
Vdc
V(BR)CEO
MPS6714
MPS6715
30
40
V(BR)CBO
MPS6714
MPS6715
Emitter-Base Breakdown Voltage
(IE = 100 !LAde, IC = 0)
40
50
V(BR)EBO
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
ICBO
MPS6714
MPS6715
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
lEBO
5.0
-
-
-
Vdc
Vdc
!LAde
0.1
0.1
0.1
!LAde
ON CHARACTERISTlCS(1)
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vdc)
(lC = 1000 mAde, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 1000 mAde, IB = 100 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 1000 mAde, VCE
VBE(on)
-
Ccb
hfe
=
60
50
1.0 Vdc)
-
-
250
0.5
Vdc
1.2
Vdc
-
30
pF
2.5
25
-
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
1.0 MHz)
Small:Signal Current Gain
(lC = 50 mAde, VCE = 10 Vdc, f
=
20 MHz)
(1) Pulse Test: Pulse W,dth", 30 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-S)GNAL TRANSISTORS, FETs AND DIODES
2-355
MPS6716
MPS6717
MAXIMUM RATINGS
Rating
MPS651S MPS6517
Unit
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current -
•
Symbol
Collector-Emitter Voltage
Continuous
IC
500
mAde
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
1.0
8.0
Watt
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
2.5
20
Watts
mWI'C
TJ, Tstg
-55 to +150
'c
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
.!~
1 Emitter
THERMAL CHARACTERISTICS
Charac:teristlc
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RWC
50
'c/w
Thermal Resistance, Junction to Ambient
RWA
125
'c/w
ONEWATI
AMPLIFIER TRANSISTORS
NPNSILICON
Refer to MPSW05 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
= 25'C unless otherwise
noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lc = 1.0 mAde, B = 0)
V(BR)CEO
MPS6716
MPS6717
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
5.0
-
-
0.1
0.1
-
10
80
50
250
60
80
V(BR)CBO
MPS6716
MPS6717
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
60
80
V(BR)EBO
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vdc, IE = 0)
ICBO
MPS6716
MPS6717
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
lEBO
Vde
Vde
Vde
pAde
pAde
ON CHARACTERISTICS(1)
-
DC Current Gain
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 250 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc = 250 mAde, IB = 10 mAde)
VCE(sat)
-
0.5
Vde
Base-Emitter On Voltage
(lC = 250 mAde, VCE = 1.0 Vde)
VBE(on)
-
1.2
Vdc
Ceb
-
30
pF
hfe
2.5
25
-
-
SMALL-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
=
1.0 MHz)
Small-Signal Current Gain
(lC = 200 mAde, VCE = 5.0 Vde, f
(1) Pulse Test: Pulse Width", 300
=
20 MHz)
,.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-356
MPS6724
MPS6725
MAXIMUM RATINGS
Symbol
MPS6724
MPS6725
Unit
Collector-Emitter Voltage
Rating
VCES
40
50
Vde
Collector-Base Voltage
VCBO
50
60
Vde
Emitter-Base Voltage
VEBO
12
Vde
IC
1000
mAde
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
1.0
8.0
mWrC
Total Device Dissipation @ TC = 25°C
Po
2.5
20
mWrC
-55to +150
°c
Collector Current -
Continuous
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-03, STYLE 1
(TO-226AE)
Collector 3
Watt
Watts
Emitter 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
50
°c/w
Thermal Resistance, Junction to Ambient
RruA
125
°CIW
ONE WATT
DARLINGTON TRANSISTORS
NPN SILICON
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
40
50
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage( 1)
(lC = 1.0 mAde, IB = 0)
V(BR)CES
MPS6724
MPS6725
Collector-Base Breakdown Voltage
(lc = 1.0 !LAde, IE = 0)
Vde
V(BR)CBO
MPS6724
MPS6725
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 40 Vde, IE = 0)
ICBO
MPS6724
MPS6725
Emitter Cutoff Current
(VEB = 10 Vde, IC = 0)
lEBO
50
60
-
-
Vde
Vde
12
-
Vde
-
100
100
nAde
100
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 200 mAde, VCE = 5.0 Vde)
(lc = 1000 mAde, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 1000 mAde, IB = 2.0 mAde)
Base-Emitter On Voltage
(lc = 1000 mAde, VCE
=
-
-
25,000
4,000
40,000
VCE(sat)
-
1.5
Vde
VBE(on)
-
2.0
Vde
1000
MHz
10
pF
5.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 200 mAde, VCE = 5.0 Vde, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
=
t,.
=
100
100 MHz)
Ceb
-
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-357
•
. MAXIMUM RATINGS
Symbol
Rating
MPS6726
MPS6727
Unit
Vdc
VCEO
Collector-Base Voltage
MPS6726
MPS6727
VCBO
Emitter-Base Voltage
VEBO
5.0
IC
1.0
Adc
Collector Current -
•
Value
Collector-Emitter Voltage
MPS6726
MPS6727
30
40
Vdc
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
40
50
Continuous
Vdc
Total Device Dissipation @ T A
Derate above 25'C
=
25'C
Po
1.0
8.0
Watt
mW/,C
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
Po
2.5
20
Watts
mW/,C
TJ, Tstg
-55 to +150
'c
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
RruC
50
'CIW
Thermal Resistance, Junction to Ambient
RruA
125
'CIW
ONE WATT
AMPUFIER TRANSISTORS
PNPSILICON
RIIfer to MPSW51 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
Off CHARACTERISncs
Collector-Emitter Breakdown Voltage.
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 /lAde, Ie = 0)
V(BR)CEO
MPS6726
MPS6727
30
40
V(BR)CBO
MPS6726
MPS6727
Emitter-Base Breakdown Voltage
(IE = 100 /lAde, IC = 0)
40
50
V(BR)EBO
Collector Cutoff Current
(VCB = 40 Vde, Ie = 0)
(VCB = 50 Vde, Ie = 0)
5.0
-
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
Vde
Vde
/lAde
ICBO
MPS6726
MPS6727
Vdc
-
0.1
0.1
0.1
/lAde
ON CHARACTERISTICS(l)
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vdc)
(lC = 1000 mAde, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 1000 mAde,lB = 100 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 1000 mAde, VCE
VBE(on)
-
Ceb
hfe
=
60
50
1.0 Vde)
-
-
250
0.5
Vde
1.2
Vde
-
30
pF
2.5
25
-
SMAll-SIGNAL CHARACTERISTICS
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
= 1.0 MHz)
Small-Signal Current Gain
(lC = 50 mAde, VCE = 10 Vde, f
= 20 MHz)
(1) Pulse Test: Pulse Width", 300 /JS, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-358
MAXIMUM RATINGS
Symbol MPS6735 MPS6734 MPS6733
Rating
MPS6733
thru
MPS6735
Unit
Collector-Emitter Voltage
VCEO
300
250
200
Vdc
Collector-Base Voltage
VCBO
300
250
200
Vdc
Emitter-Base Voltage
VEBO
6.0
Vde
Collector Current Continuous
IC
300
mAde
Total Device Dissipation
@TA=25°C
Derate above 25°C
PD
Total Device Dissipation
@TC=25°C
Derate above 25°C
PD
Operating and Storage
Junction
Temperature Range
TJ, Tstg
1.0
8.0
Watt
mWrC
2.5
20
Watts
mWrC
-55to +150
°C
CASE 29-03. STYLE 1
TO-92 (TO-226AE)
3 Collector
":~
1 Emitter
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
R8JC
50
Unit
0c/w
Thermal Resistance, Junction to Ambient
R8JA
125
0c/w
Characteristic
Symbol
Max
ONE WATT
HIGH VOLTAGE TRANSISTORS
NPNSILICON
Refer to MPSW42 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Charecteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 I
DUTY' CYCLE';; 10%
10
20
2.0
5.0
VCE, COLLECTOR·EMITTER VOIJAGE IV)
1.0
II
50
80
MPSB099
FIGURE 7 - OC CURRENT GAIN
40D
VCE' 5.0 V
z
~ 200
...
~
'":::0
'"
'"'"
~
- --- -- - 25°C
~
100
80
I--
=lksJ c
- -_-Ff"
T}
-
........
r-.-i- r-
~
!'\~
--",
r--
I--
r-
-55°C
1\ \
60
40
0.2
\
,
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT ImA'
20
30
50
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-364
70
I
100
~
\ 200
NPN MPS8099, PNP MPS8598, MPS8599
FIGURE 9 - COLLECTOR SATURATION REGION
FIGURE 8 - "ON" VOL TAGES
1. 0
...2.
~
o
>
I.--:::;::
;""
O.8
~
~ 2.0
III'
TJ:2S0C
C.
w
'"
~
o
V8E("..,) "'ICIIB: 10
o. 6t-:
r
'1111
1.6 f-
,
'11.11'
,
_IIII
IJ
1\
\
> 1.2
_I!
V8E"'VCE: S.OV
'"
~
~
O.4
'"
8~
SOmA
10mA 20mA
,
"'"'
TJ: 2SoC
IIII
200mA
lo0mA
0.8
o
:>
--
O. 2
VCE(..!)@IC/18: 10
O.S
1.0
2.0
S.O
10
20
IC. COLLECTOR CURRENT (mA)
SO
100
~
0
0.02
\.
'"
ul
200
1\
1\
0.4
O.OS
0.1
0.2
O.S
1.0
2.0
lB. BASE CURRENT (mA)
5.0
10
-
20
FIGURE 10 - BASE-EMITTER TEMPERATURE COEFFICIENT
_-1 .0
i
~-1 .4
~
-
~ -1 .8
u
w
~
~
Imoc
f- R(J\/8 FOR V8E
0:
1/
-5S oCTO
-2 .2
~
cO -2 .6
~
0:
-300.2
O.S
1.0
50
S.O
10
20
IC. COLLECTOR CURRENT (mA)
2.0
100
200
MPS8598, MPS8599
FIGURE 11 - OC CURRENT GAIN
30 0
TJ I-
12S0~
z 200
"
'"
~
a'"
f - - t- 2S
JC
-
VCE: 5.0 V
.........
f--"
100
'"
1"'\1--1"-
l\
~
'-'
c
~
7of--
-55 0C
~
\.
0
3 00.2
\
r\.
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT(mA)
20
30
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-365
50
70
100
200
•
NPN MPS8099, PNP MPS8598, MPS8599
FIGURE 13 - COLLECTOR SATURATION REGION
FIGURE 12 - "ON" VOLTAGES
rn
~
2.0
'"
~
w
~
'">
~
•
1.0
2.0
6.0
10
20
IC. COLLECTOR CURRENT (mAl
~~
oit
60
100
1111
1111
20mA
0.8
8
0.4
ul
200
TJ·25 C
0
0.02 0.05
50mA
~ -1.8
~ -2.2
\
\
1\
l\.
0.1
--
-66.C TO 126·C
~
~
~m -2.6
~
'"
-3·00:2
0.6
1.0
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (mAl
100
200
/
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-366
\.
-
0.2
0.6
1.0
2.0
lB. BASE CURRENT (mAl
/
R6V8 FORVBE
20DmA
\
j
u
100mA
\
\
FIGURE 14 - BASE-EMITTER TEMPERATURE COEFFICIENT
-I.0
-1.4
I illl
I !III
\
1.2
!t
0.6
II
II
Ic·IOm
~
~
0.2 H-+f+t-H-I--t-Ht+ll-ftt--t--H+t++HV--;;;""l
f-- VCE(..tl@IIC/lB=IO
1.6
1'-.....
I-6.0
10
20
,i.
MAXIMUM RATINGS
Rating
Symbol
MPSA05 MPSA06
MPSA55 MPSA56
Unit
Collector-Emitter Voltage
VCEO
60
80
Vdc
Collector-Base Voltage
VCBO
60
80
Vde
Emitter-Base Voltage
VEBO
Collector Current -
Continuous
4.0
Vdc
IC
500
mAde
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
PD
625
5.0
mW
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
PD
1.5
12
Watts
mWI'C
TJ, Tstg
-55 to +150
'C
Operating and Storage Junction
Temperature Range
NPN
MPSA05
MPSA06
PNP
MPSA55
MPSA56
3 Collector
.:()
1 Emitter
3 Collector
..~()
, Emitter
•
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Charactaristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
RruC
83.3
'C/W
RruA(l)
200
'C/W
3
AMPLIFIER TRANSISTORS
(1) RruA is measured with the device soldered into a typical printed circuIt board.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
V(BR)EBO
4.0
-
ICEO
-
0.1
-
0.1
0.1
100
100
-
MPSA05, MPSA55
MPSA06, MPSA56
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
Collector Cutoff Cu rrent
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
60
80
ICBO
MPSA05, MPSA55
MPSA06, MPSA56
Vdc
Vdc
!lAde
!lAde
ON CHARACTERISTICS
-
DC Current Gain
(lc = 10 mAde, VCE = 1.0 Vdc)
(lC = 100 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
-
0.25
Vdc
Base-Emitter On Voltage
(lc = 100 mAde, VCE = 1.0 Vde)
VBE(on)
-
1.2
Vdc
100
-
50
-
-
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(Ie = 10 mA, VCE = 2.0 V, f = 100 MHz)
(lc
=
100 mAde, VCE
=
1.0 Vdc, f
=
100 MHz)
tr
MPSA05
MPSA06
MPSA55
MPSA56
MHz
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(2)
is defined as the frequency at which Ihfel extrapolates to unity.
tr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-367
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
FIGURE 1- SWITCHING TIME TEST CIRCUITS
Turn-on Time
Turn-off Tim.
Vee
-1.0V
+Vee
+40V
-15.0 ".1-
100
100
+10Vn
O~
-'lr-......,..... Output
Output
L-.V~~~~~R~e~H
5.0"F
t r ,.. 3.0"1
100
•
tr
= 3.0 ns
·TotafShunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
FIGURE 2 -
CURRENT-GAIN -
BANDWIDTH PRODUCT
PNP
MPSA55. MPSA56
NPN
MPSA05. MPSA06
300
I II
:c
~
=>
200 I- VCP2.DV
TJ = 250 C
Q
Q
100
~I
~
....
\
VV
~
~
200
'":c~
t;
~
ill
a::
\
.t'
b
0
D
~I
0
D
~
/
fiE
Q
'\
Z
~
a.t'
3D
2.D
3.D
5.D 7.D lD
2D
3D
5D
IC, COLLECTOR CURRENT (rnA)
7D lDD
200
FIGURE 3 -
0
20
2.0
5.0
3.0
70
Cibo
.......
20
I-
U
It
<[
...,
..;
100
200
100
40
<[
70
PNP
MPSA55. MPSA56
60
~
7.0 10
20
30
50
IC, COLLECTOR CURRENT (rnA)
CAPACITANCE
80
~
i'
.'-
NPN
MPSA05. MPSA06
z
~
100
~
:z:
a::
a
I I
VCE=2.0V
TJ=250 C
=>
g
Z
.,:.
I
I-
-
TJ
I---.
"co.
w
...,
30
<[
20
I-
......
It
<[
...,
u'
8.0
6.0
Cabo
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
Cabo
.......
10
7.0
1"'"
0.2
....... 1'-
U
r--.
TJ = 250 C
........
z
10
4.0
0.1
Cibo
.....
50
=250 C
50
100
5.0
0.1
0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-368
20
50
100
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
FIGURE 4 _ SWITCHING TIME
PNP
MPSA55. MPSA56
NPN
MPSA05. MPSA06
1.0 k
1.0 k
700
500
I,
300
~
200
]
~
'" ,
100
0
;::
.......
0
,
0
5.0 7.0
10
I'..
~
~
;:: 70
..;
50
I,
..............
200
300
10
5.0
500
~
~
If
7.0
10
c::;;
f'::
VCC=40V
IcII8 = 10
181 = 182
TJ = 25°C
20
r--.
20
30
50 70 100
IC. COLLECTOR CURRENT (mA)
...........
Id@V8E(off) 0.5 V
30
...... V
,
I'...
,.;:100
If
VCC= 40 V
IC/18= 10
181 = 182
TJ = 25°C
0
t'-.,
200
1111
0
I,
.......
300
I'-.
Id @V8E(off) = 0.5 V
0
700
500
.......
I,
f'.,: I--
20 30
50
70
100
IC. COLLECTOR CURRENT (mA)
200
300
500
FIGURE 5 - THERMAL RESPONSE
MPSA05. MPSA06. MPSA55. MPSA56
~
~
1.0
~
O. 7-::=. 0=0.5
~ 0.5
~
- I- 0.2
~ 0.3
z
0.1
~ 0.2
0.0
ilior O. 1 1\_
0.0 7 - ~-= 0.01
SINGLE PULSE
w 0.05 -
j
-
pffUl
12~j
z"JC(I) = ,!I) 0 R8JC
DUTY CYCLE. 0 11/12
o CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT 11 (SEE AN·469)
TJ(pk) - TC = P(pk) Z8JC(I)
~Jt(tI" i(t) 1R8iAI
~JI(Pk) -/ A~ P(Pki Z8IA(!) I I
r=
_-r
,.....,.
0.02
~ S~GILE JUL1SEI
z
;;:i
II
~ 0.0 110
2.0
'"~
-
....
I-
0.03
C;;;
5.0
.
~
I I I10
10
50
FIGURE 6 -
100
200
500
I. TIME (m,)
ACTIVE -
0
1.0 k
1.0 k
100
g;
70
:3
30
10
~
:3
50
lOOk
.......
1'.
i'..
." ....
1.0m'1\
1.0 1,
,
i'..
Current Limit
......
10
1.0
II I
",
MPSA05
~
1',
~
MPSA06
50
2.0 3.0
5.0 7.0 10
20
30
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
30
:3
10
-
100
1'.
-
- Thermal limit
ll,l
1.0
]""
"-
" f""
MPSA55 _ j::.;;;
MPSA56
50
20
30
5.0 7.0 10
1.0 3.0
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-369
l
,1.0,
=25°C
- - Current limit
- - Second Breakdown limit
10
70
TC
TA =15°C
70
50
:3
"
1',
aor 100
0
- - Second Breakdown Limn
........
~ 200
~
TC = 25°C '\.
~ - - - Thermal Limit
1.0m~
1 300
1\
TA -15°C
r- -_.. -
100",
700
500
100",
300
a
50 k
1.0k
700
500
200
10 k
PNP
MPSA55. MPSA56
1.0k
~
10 k
REGION SAFE OPERATING AREA
NPN
MPSA05. MPSA06
1
5.0 k
70
100
..
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
NPN
MPSA05. MPSA08
FIGURE 7 - DC CURRENT GAIN
400
--T) 1250C
z
;;: 200
to
t-
ffi
GC
GC
'"'"'
100
j!-
SO
'"'oil
0
-
60
40
0.5
f..--
- --
f--
-
,...-
-55°C
I--
~
:::.w
0
1.0
f--
'-'"
3.0
2.0
..~
111111
II 1111
5.0
-H-±:f:ttll: VSElon: ~ J~~ ~'1.0 V
~
200
100
300
..~
.
L.I-""
:::.
1111
II
11~~A- 2~0~1
I~I~ \0 mA 5~
mA
w
to
T/= 2~OC'
,
500mA-
«
~
0.2
VCE(saU@ICIIS= 10
2.0
1111
O.S
':;
0.6
>
~
i
500
GC
>
>-
1.0
70
FIGURE 9 - COLLECTOR SATURATION REGION
0.4
0
0.5
50
7.0
10
20
30
lC. COLLECTOR CURRENT (mAl
=--
VSE(sat)@ ICIIS = 10
..L
to
--
"-'::: ~
~~
1.0
~; ~ 25°C
0.6
VCE I=1.0V
"=>...
~
0.7
O.S
.............
~ r-
FIGURE 8 - "ON" VOLTAGES
1.0
-
~
r-
~
25°C
f....-
- --
""11
5.0
10
20
50
IC. COLLECTOR eURRENT (mAl
.
-
100
0.4
\
,,;,
t-
~
0.2
8
oil
200
500
'"'
>
0
0.05
0.1
--
\
r--
0.2
0.5
1.0
2.0
5.0
IC. COLLECTOR CURRENT (mA)
FIGURE 10 - BASE-EMITTER TEMPERATURE COEFFICIENT
-II.S
I:; -1.2
>e
V
I-U
RINBforVSE
~ -2.0
i
i'! -2.4
~
-2.S
0.5
1.0
2.0
--
./
~
5.0
10
20
50
IC. COLLECTOR CURRENT (mA)
100
200
500
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-370
--
......
-I-
I-
10
20
50
NPN MPSA05, MPSA06, PNP MPSA55, MPSA56
PNP
MPSA55. MPSA56
FIGURE ll-DCCURRENTGAIN
400
I
--
TJ: 125DC
z
;( 200
25DC
'"
I-
i:::i
~
a
~
ul
~
VC~ :1.0V
.........
.......
~ [\.
-55 DC'
100
--
a0
0
40
0.5
1.0 •
0.7
2.0
3.0
5.0
7.0
10
20
30
IC. COLLECTOR CURRENT (mAl
FIGURE 12 - "ON" VOLTAGES
TJ :
J--l.-±±±l:ttl=-f-
::J
VaE(Dnl @VCE : 1.0 V--+-++++t+t/--/-H-i
TJ: 250 C
~ O. a
'"
«
le;
Ic:l0mA-
~
H-Htf--jf-H-H-tttt--+-+-+-+++Itt---+-+-H
~
1
O. 6
>
a:
o
>
>-
SOmA
100 rnA
f--\
I-
H-Htf----
-
O. 2
o
'-'
5.0
O
0.05
I'---
r0.1
5.0
0.5
1.0
2.0
IS. BASE CURRENT (rnA)
0.2
-0.a
\:,-1. 2
=;;
~
~
V
R6\lBfo,VSE
-2.0
§i!! -2.4
-2.a
0.5
-
L
l-
m
I--
1.0
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (rnA)
100
200
500
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-371
~
r-
r-
t-
FIGURE 14 - BASE-EMITTER TEMPERATURE COEFFICIENT
iff -1.6
500 mA-
250 rnA
~
0.4
o
0.2
500
300
w
~ 0.61±1::t.tt:$"f-t1"'I"f
11'1'I till[tt---IH-tlHtttt---t-t-n
0.4
200
g
~I-
g
'"~
100
1.0
25 DC
VBE(satl@ Iclla :10
70
~.
FIGURE 13 - COLLECTOR SATURATION REGION
II 1"1
+-+-+H+"ftt1-+-+t+1-++H--t-f-t:;;I
o.al-t+l*--4--'--'-Iw.I.....III'+-I~t--H-++ti:b--"TI-"-:::::~~
~III
1.0
50
_"'!
.::::::" ~
10
20
50
•
MPSA13
MPSA14
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
Total Device Dissipation @ T A = 25°C
Derate above 25°C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWrC
TJ, Tstg
- 55to +150
°c
Rating
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Collector 3
~
EmItter 1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rruc
83.3
°C/W
Thermal Resistance, Junction to Ambient
RruA
200
°C/W
Characteristic
DARLINGTON TRANSISTORS
NPN SILICON
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
-
Vde
100
nAdc
100
nAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 pAde, IB = 0)
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
-
ON CHARACTERISTICS")
DC Current Gain
(lC = 10 mAde, VCE
(lc
=
=
100 mAde, VCE
hFE
5.0 Vde)
= 5.0 Vde)
MPSA13
MPSA14
5000
10,000
-
MPSA13
MPSA14
10,000
20,000
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 0.1 mAde)
VCE(sat)
Base-Emitter On Voltage
(lc = 100 mAde, VCE = 5.0 Vde)
VBE
-
SMALL-8IGNAL CHARACTERI$TICS
Current-Gain - Bandwidth Product(2)
(lc = 10 mAde, VCE = 5.0 Vde, f = 100 MHz)
(1) Pulse Test: Pulse Width", 300 J1-S, Duty Cycle'" 2.0%.
(2) IT = Ihfel • ftest·
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-372
-
-
1.5
Vde
2.0
Vde
MPSA16
MPSA17
MAXIMUM RATINGS
Symbol MPS-A16!MPS-A17
Rating
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current -
Continuous
IC
12
Unit
40
Vdc
15
!
100
Vdc
mAde
Total Device Dissipation @ TA
Derate above 25°C
= 25'C
Po
350
2.8
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.0
8.0
Watt
mWrC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29·04, STYLE 1
TO-92 (TO-226M)
SWITCHING TRANSISTORS
THERMAL CHARACTERISTICS
Symbol
Max
Thermal Resistance, Junction to Ambient
RruA
357
Unit
0c/w
Thermal Resistance, Junction to Case
RruC
125
°CIW
Characteristic
ELECTRICAL CHARACTERISTICS
NPN SILICON
(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
40
-
12
15
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc,lc = 0)
V(BR)EBO
MPS-A16
MPS-A17
Vdc
Vdc
Collector Cutoff Cu rrent
(VCB = 30 Vdc, IE = 0)
ICBO
-
100
nAdc
Emitter Cutoff Current
(VBE = 10 Vdc, IC = 0)
lEBO
-
100
nAdc
hFE
200
600
VCE(sat)
-
0.25
100
80
-
-
4.0
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
= 10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vdc, f
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
= 100 MHz)
MPS-A16
MPS-A17
tr
Cobo
100 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-373
MHz
pF
•
MPSA16, MPSA17
FIGURE 1-DC CURRENT GAIN
500
TA 2JOC
VCE - 10 Vdc
0
- - --
---
......
•
,.--
~
~
~ l\
I--f-
f.--
V V
70
NlpS·~ ~
I-
I--
--
NlPS.~11
~
l1
50
0.05
01
0.2
1.0
0.5
20
10
5.0
50
20
IC, COLLECTOR CURRENT (rnA)
FIGURE 2 -SMAll SIGNAL CURRENTGAIN
FIGURE 3 -SATURATION AND ON VOLTAGES
100 0
2. 0
f
~ 70 0
VCE
>-
f5
:;::
~
1.0 kHz
~
5.0 Vdc
~
~
=> 40 0
'"-'
w
MPS·AI7
to
on
-'
~ 200
~
V
j
V
V
V
100
0.1
I-""
V
0.3
I 0
>'
o. 6
>
I-"
MPS.AI6
0.5
II
0.7
'MP~'AI171
1.4
1. 2
;o
to
f-
1
I. 6
500
~ 30 0
1
1.8
TA~250C
to
1.0
3.0
50
7.0
1.0
10
MPS.AII7
2.0
3.0
MP~'AI61
t;
=>
'"f'"
100
'"to
~
70
~I
50 f--
z
"'-
~
MPS.A0r-
~
~
'">-<3
~
>-
=>
i""'t--
.........
2.0
.Q
30
8
1.0
2.0
50
100
TA = 25 0C
;:';
TA~250C
0.5
11111
40
0
20
0.2
30
7.0
~
w
'"Z
.,:.
'"=>
'"
.1:'
20
10
I
to
Z
10
FIGURE 5 -OUTPUT CAPACITANCE
VCE =.10 Vdc
;;:
5.0
Ld"
IC, COLLECTOR CURRENT (rnA)
FIGURE 4 - CURRENT·GAIN-BANDWIDTH PRODUCT
'";!!.
MPS·AI6
~ ~S'AI6
VCE(~t) ~ ICilB - 10
IC, COLLECTOR CURRENT (rnA)
N 200
..-
8e--- t - VBE(on)
o.4
o. 2r-o
V
V 1-""'1-"
5.0
10
20
IC, COLLECTOR CURRENT (rnA)
1.0
0.4
0.7
1.0
-- .....
2.0
~
4.0
MPS.AI~_
7.0
10
VR, REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-374
-
MPS'AI7~
20
40
MPSA18
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
6.5
Vdc
IC
200
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWf'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWf'C
TJ, Tstg
-55to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
•
LOW NOISE TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
R9JC
83.3
°CIW
R9JA(l)
200
°CIW
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
NPNSILICON
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
45
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 ItAdc, IE = 0)
V(BR)CBO
45
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 ItAdc, IC = 0)
V(BR)EBO
6.5
-
-
Vdc
-
1.0
50
nAdc
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 ItAdc, VCE = 5.0 Vdc)
(lc = 100 ItAdc, VCE = 5.0 Vdc)
(lc = 1.0 mAde, VCE = 5.0 Vdc)
(lC = 10 mAde, VCE = 5.0 Vdc)
-
hFE
-
400
500
500
500
580
850
1100
1150
-
-
0.08
0.2
0.3
-
0.6
0.7
Vdc
100
160
-
MHz
Ccb
-
1.7
3.0
pF
Ceb
-
5.6
6.5
pF
-
0.5
4.0
1.5
-
6.5
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 0.5 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 1.0 mAde, VCE = 5.0 Vdc)
VBE(on)
1500
Vdc
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vdc, f
=
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
=
1.0 MHz)
Emitter-Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f
=
1.0 MHz)
Noise Figure
(lC = 100 ItAdc, VCE
(lc = 100 ItAdc, VCE
tr
100 MHz)
NF
= 5.0 Vdc, RS =
= 5.0 Vdc, RS =
Equivalent Short Circuit Noise Voltage
(lC = 100 ItAdc, VCE = 5.0 Vde, RS
10 k!l, f = 10 Hz to 15.7 kHz)
1.0 k!l, f = 100 Hz)
VT
=
1.0 k!l, f
=
100 Hzt
dB
(1) R9JA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width .. 300 p.o, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-375
-
-
nV/YHz
MPSA18
FIGURE 1 - TRANSISTOR NOISE MOOEL
,-----------1
I
I
Ideal
Transistor
•
I ___________ -..lt
L
NOISE CHARACTERISTICS
(VCE
= 5.0 Vdc, T A = 25°C)
NOISE VOLTAGE
FIGURE 3 - EFFECTS OF COLLECTOR CURRENT
FIGURE 2 - EFFECTS OF FREQUENCY
30
=;:
.
~
>
z
1~II~dtl
=11101~ll
an WI"i' 1'(' z
10
7.0
"-
RS
~
0
IRSI~IOI
~
'"
.
'"
1= 10 Hz /
>
100 Hz
w
'"~
3.0 mA
10 mA"i-.,
UJ!t-.-J..
111U300~
20
50 100
-
7.0 ~
3.0
0.01
0.02
FIGURE 4 - NOISE CURRENT
IC
"-
~
~
a
w
1.0
~
0.1
..........
~
r----
'=
r.....
0.2
RS
O. 1
10
~
~
3.0 mA
20
10"A
50
100 kHiJ
S.O
10
J IlllllLl
I I IIIII
III11111 I II 11I11
I\~
Bandwidth = 10 Hz to 15.7 kHz
w
g 12
'+-
h.o mA
u::
w
3~
0
~
16
~
'"
~ 80
~
~'
~
i'
~4Eiffi
0.1
0.2
O.S
1.0
2.0
IC, COLLECTOR CURRENT (mA)
1\
10mA
300"A
~. 0.5
0.3
20
"'1'-1-<
"-
O.OS
1.0 kHz
FIGURE 5 - WIOEBANO NOISE FIGURE
Bandwidth = 1.0 Hz
5.0
iii 2.0
,/
""
200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
I, FREaUENCY (Hz!
7.0
y
:---.:: ~
/if' 50
10
3.0
/
V
~ 10
5.0
1
,...
= WHI,
w
/if'
3.0
10
Ba~Jthl
r20
\
w
'"0
I
III~I = 10 Im~
1\
w
'"
0
IIII
r\
20
30
z
IC = 1.0mA
"
40
,/
SOO"A
J"1o\!l
Tttlll ~
100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
I, FREQUENCY (Hz)
o
10
20
SO
LO~ O"A
100 200 SOO 10k 2.0k S.Ok 10k 20k SOk lOOk
RS, SOURCE RESISTANCE (OHMS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-376
L--
~
MPSA18
100 Hz NOISE DATA
FIGURE 6 - TOTAL NOISE VOL TAGE
300
I
200
IC = 10
:;;
~~
.5 100
.
"'"'
70
f=1=
"'
'"z<3
.
>
30
./ V
20
--
10
70
5.0
3.0
10
V
1/
~O J V
10
rnA
~
6
....
.....
11/
rnA
Bandwidth" 1.0 Hz
S 50
0
>
FIGURE 7 - NOISE FIGURE
20
50
lJ(00
"A7
1./
......
IP!O,O:"
30"A
10"A
./
100 200
500 1.0k 2.0k 50k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
10
50k lOOk
20
50
100 200 500 1.0k2.0k 5.0k 10k 20k
RS, SOURCE RESISTANCE (OHMS)
50k lOOk
FIGURE 8 - DC CURRENT GAIN
4.0
~ 3.0
VeE
::;
---
~
o
z
z
<
....
"'
1.0
~ o. 7
a
g
0.5
0.4
t
0.3
--
0.2
0.01
~ - --
=5.0 Volts
« 2.0
r0.02
0.03
TA = 1150C
~
--
--r--
I-"
I-
0.1
0.05
~
2.0
I II
I--
3.0
f-I-
5.0
ID
~-O.8
:>
g
~B~ ~ v6~ ~ 5.0 V
ffi ~
i
2:
~-1.2
~it
"'
~ ~-1.6
0.4
o
>
>'
~
02
VCE(sall@ICIIB= 10
0.01 0.02
- -
FIGURE 10 - TEMPERATURE COEFFICIENTS
II III
'"~
10
r-
-0.4
II III
0.6
--
0.2
0.3
05
Ie, COLLECTOR CURRENT (rnA)
0.8 f-TJ=250C
f:'!
i5
-~
-55°C
FIGURE 9 - "ON" VOLTAGES
1.0
--
10
20
II
~-2.0
-55°C to 25°C
~
~
I-
005 0 I 02
05 1 0 20
50
IC, COLLECTOR CURRENT (rnA)
TJ = 25°C 10 125°C
=>
II IIIIII
~ -2.4
50
100
0.01 0.02
005
0' 02
0.5 1 0 2.0
5.0 10
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-377
20
50 100
•
MPSA18
FIGURE 11
~
FIGURE 12
CAPACITANCE
8. Or' - ,
~ CURRENT-GAIN~BANDWIDTH
PRODUCT
500
N
H-.L
rti{..(
6. Ot---
~ 4.
Or-- t-
Cob
t--
Wlt
~ 3. 0
z
'".....
~
Ccb
%
t--.....
""""
I'--.
I
i'
C.b
Jibl
TJ
;§
=1250~
~
o
o
li:
r--
%
.....
o
t--..... i'-
~
•
..
8
0.1
0.2
0.5
i\
1\
;;;
J
0
°v
V
z
;3
U
20
l"-
V
o
i'-
2. 0
.......1--'
300
;;:
<;>
.....
~ t---1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
100
I- VCE = 5.0 V
~
70 I-- TJ = 250C
a'"
50
.1::
1.0
I
2.0
3.0
,5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-378
30
50
70
100
MPSA20
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
Vdc
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
4.0
Vdc
IC
100
mAde
Po
625
5.0
mW
mWrC
Po
1.5
12
Watt
mWrC
TJ, Tstg
-55to +150
'c
Collector Current -
Continuous
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
.,
~~.'"""'
23
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
RIIJC
83.3
'CIW
RIIJA(1)
200
'CIW
Refer to MPS3903 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lc = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
V(BR)EBO
4.0
-
Vdc
ICBO
-
100
nAdc
hFE
40
400
-
VCE(sat)
-
0.25
Vdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 5.0 mAde, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product(2)
(lC = 5.0 mAde, VCE = 10 Vdc, f = 100 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cobo
125
-
-
4.0
(1) RIIJA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width", 300 p.S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-379
MHz
pF
•
MPSA27
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Unit
VCES
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
Po
625
5.0
mWrC
-55to +150
°c
Collector Current -
•
Symbol MPS-A25IMPS-A26IMPS-A27
Collector-Emitter Voltage
Continuous
Total Device Dissipation
@TA- 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
40
I
50
I
60
Vde
mW
,,'"~
Emitter 1
DARLINGTON TRANSISTOR
THERMAL CHARACTERISTICS
Charactaristlc
NPN SILICON
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA - 25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(lC - 100 ~dc, VBE - 0)
V(BR)CES
60
-
-
Vdc
Collector-Base Breakdown Voltage
(lC - 100 ~dc, IE - 0)
V(BR)CBO
60
-
-
Vde
Charactarlstlc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB - 30 V, IE - 0)
(VCB = 40 V, IE - 0)
(VCB - 50 V, IE - 0)
ICBO
-
-
100
nAdc
Collector Cutoff Current
(VCE - 30 V, VBE - 0)
(VCE = 40 V, VBE - 0)
(VCE - 50 V, VBE - 0)
ICES
-
-
500
nAde
Emitter Cutoff Current
(VBE = 10 Vde)
lEBO
-
-
100
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC - 10 mA. VCE = 5.0 V)
(lc = 100 mA, VCE = 5.0 V)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 mA, IB = 0.1 mAde)
VCE(sat)
-
-
Base-Emitter On Voltage
(lc = 100 mA, VCE = 5.0 Vde)
VBE(on)
-
-
10,000
10,000
SMALL-SIGNAL CHARACTERISTICS
Small Signal Current Gain
(lC = 10 mA. VCE = 5.0 V, f
=
100 MHz)
(1) Pulse Test: Pulse Width..::;;; 300 p,S. Duty Cycle"'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-380
-
-
-
1.5
Vde
2.0
Vdc
MPSA27
FIGURE 1 -
I
120 f-- VCE = 5.0 V
z 100
ii3
u
~
~
'\.
"-
TA = 25°C
r--....
20
i----r-.
o
10
20 30
-t::::::Ft
VBE(on)
t200
FIGURE 4 -
~
~ 1.3~~TfA4=,2M5°,C~-r~~~*-t+~~~-++-t+~~
~ a7
2.0
i
500
~
",-
1K
1'-.1'...
~
\.
V
-'
1\
1.0
.. 0.8
z
'"c;:;
IC = 250 mA"'1'"!H-ffirltH
8 0 9 1t-H--t-1rt+tttI---I"'k+~ 100 rnA
~ 08 1\
200
HIGH FREQUENCY CURRENT GAIN
>-
1 1 1t-H--t-1rt+tttI--+Hi+jf.\+l1l--+++NiIC;-=.".-50-,-0..,.m_A1+t++tt1
r--
10
20 30
100
IC. COLLECTOR CURRENT (mA)
veE" 5.0 V
f = 100 MHz
TA = 25°C
z
g 1 2 1t-H--t-1rt+tttI--+Hi+jIll-H1l--++-\l-H-l+ll1-++-++t++tt1
1\
~CIWlf IC/IBI = 11001
0
2 a 3.0
40
16~rr"nTTIIT-',,-n~~~-'nnTrn-,,-rrnTm
~ 1a
v
J..H+tt
1a
1K
gI5~rl~II~~II+r~~+*+H~+++H~
~14~~~11~1H+B*-r~~~*-~~~~-++-t+~~
..
VCE - 5 a V
111111
0.8
FIGURE 3 - COLLECTOR SATURATION REGION
~
@
06
500
./
10
TA = -55°C 10
20 30
100
IC. COLLECTOR CURRENT (mA)
IC/IB = 1000
III~
~ 12
>
,;
1\
@
'"
~
1--
40
VBE(S)
14
in
80
Cl
g
16 I--- TA = 25°C
L...--
60
"ON" VOLTAGES
II
TAI~ 1~5~~
<1
'"
>-
FIGURE 2 -
DC CURRENT GAIN
0.6
111I1fj:1I11=t1lt-#~UH-l--l-J..I..I.jj
ttt±1ltl-l--t-+lI+1:
II
11111
I
a 10 a 20 a 50 1 a 2 a
I run II
5 a 10 20
lB. BASE CURRENT (I'A)
50 100 200
0.2
0.5
500 1K
1.0
2.0
50
10
20
50
100
IC. COLLECTOR CURRENT ImAI
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
1000
...
500
;;;
.§.
as
200
~
1 a m~100 1"
...
...
~:-
I-- TA = 25°C
::j
50
8
20
-
...
-
~ CURRENT LIMIT
- - THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
1.0
i-
2.0
II
II
40
6.0 10
r\.
\.
... ...
~ 100
i;j
1.0
w
W
D
~
10
i
--.....;
f=TA - -55°C
'"""
~
50
50
10
20
50
100
Ie. COLLECTOR CURRENT (mAl
200
500
II
II
II
2~0~ to 1'2~0IC I
lk
r-9~C Ifar JCEI(sl)
II
I
-5.0
10
1'1
~
~
.§.
>- 200
z
_
II I
~
:::j
S
Ie· 500 rnA
IC· 10 mA._
w 0.8
Ic· 100mA
Ie· 250 rnA
I'
0.4
500
0.2
10 20
10 20
Ie. BASE CURRENT ("A)
100 200
lk 1.5k
FIGURE 6 - HIGH FREQUENCY CURRENT GAIN
10
100",
1.0mX
...
' ...
TA. 25°C
,
,
c
50
-1- ~
10
1.0
lk
\
\
12
~
I
200
500
I
11111
~ 1.6
..,." l/'''
50
10
20
50
100
IC. COLLECTOR CURRENT (rnA)
200
~
_~I
100
B
co
20
10 20
50 100
IC. COLLECTOR CURRENT (rnA)
<:>
lk
~
50
TA • '~~ot
20
FfGURE 5 - ACTIVE REGION - SAFE OPERATING AREA
500
I
>
co
c
.W=
2.0
20
in
V
I 1.u-t1 -55°C
to 25°C
r- 9Ve far VeE
~
......
II 1111
FIGURE 4 - COLLECTOR SATURATION REGION
-55°e to 25°C
25°C to 125°C
VCE • 50 V •
@
I - - - VCE(S) @ Ic/le • 10k
2.4
l-
-
f-
VeE(ON)
I-'
10
"
/"
/-
I~
10
FIGURE 3 - TEMPERATURE COEFFICIENTS
0.0
Iclla • 1.0 k
-
12
06
20
@
t-- TA· 25°C
14
08
20
10
~
:::j
S
VeE(S)
16
10
.
III
11111111
1111111
18
FOTA·25°C
=
>-
5.0 V
125°C
f-TA
~
100
FIGURE 2 - ON VOLTAGES
.
,
Current limit
-
l'\
I,>;
:~c'$o
,
'C'
"
-
,
++
- - Valid for Duty Cycle <;;1 0%
Secondary Breakdown Limit
- Thermal Limit
2.0
,
z
50
1ig§i
2.0
~
1.0,
"
,
a
,
5.0
10
20
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
a
~
as
I"
!
1.0
-
-)0...,
0.5
'"
~
~ 0.2
1 0.1
t
50
VCE· 5.0 V
TA·25°C
f • 100 MHz
100
0.3 0.5
1.0
2.0
5.0 10 20
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-383
50
100
200300
..
MPSA42
MPSA43
MAXIMUM RATINGS
Rating
Symbol
MPSA42
MPSA43
Unit
Collector-Emitter Voltage
VCEO
300
200
Vde
Collector-Base Voltage
VCBO
300
200
Vde
Emitter-Base Voltage
VEBO
6.0
Collector Current -
Continuous
6.0
Vde
IC
500
mAde
Total Device Dissipation @ T A = 25°C
Derate above 25°C
Po
625
5.0
mW
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watts
mWfC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
3 Collector
~()
1 Emitter
HIGH VOLTAGE TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RflJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RflJA
200
°CIW
NPNSILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)EBO
ICBO
MPSA42
MPSA43
Emitter Cutoff Current
(VBE = 6.0 Vde, IC = 0)
(VBE = 4.0 Vdc, IC = 0)
300
200
-
300
200
-
Vde
V(BR)CBD
MPSA42
MPSA43
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 160 Vde, IE = 0)
Vde
V(BR)CEO
MPSA42
MPSA43
6.0
-
lEBO
MPSA42
MPSA43
Vde
!lAde
0.1
0.1
!lAde
-
-
0.1
0.1
25
40
40
-
ON CHARACTERISTICS(l)
DC Current Gain
(lC = 1.0 mAde, VCE
(lc = 10 mAde, VCE
(lc = 30 mAde, VCE
hFE
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
VCE(sat)
MPSA42
MPSA43
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
VBE(sat)
-
-
Vde
0.5
0.4
0.9
Vde
50
-
MHz
-
3.0
4.0
SMALL-SIGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(Ie = 10 mAde, VCE = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f
=
Ccb
1.0 MHz)
MPSA42
MPSA43
pF
-
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-384
MPSA42, MPSA43
FIGURE 1 - DC CURRENT GAIN
200
roT}'+l~ t--- ....- l - f-
z
;;: 100
'"
I-
ill
:::
G
0
'-'
Q
~
0
20
-
I
VCE -10 Vd,
---
~
25°C
I
~
f0-
k-::
-55°C
'1
~
I---
...............
~
....... ~
~
r-
~
~
I"
\
~
.1
1.0
'I
13.0
2.0
5.0
7.0
10
30
20
70
50
100
IC. COLLECTO R CU RRENT (rnA)
FIGURE 2 - CAPACITANCES
FIGURE 3 - CURRENT·GAIN-BANDWIDTH PRODUCT
-
~100
100
!!
I-
g
0
Cob
"
=
~ 50
c:>
........
0
5
~
:i
0 .....
,/
./
30
~
,;.
r---
Cob
2.0
1.0
2.0
5.0
10
20
50
100
TJ = 25°C
Vee=20V
f = 20MHz
20
G
200
J:'
10
1.0
2.0
3.0
VR. REVERSE VOL TAGE (VOLTS)
1.4
J_U
T~5~
JIJ
IIJ
1. 0
~
g
~ O.6
~
c::
>
:>
200
V~E(~I.IICJI~ =Il~
3.0
5.0 7.0
10
20
IC. COLLECTOR CURRENT (mA)
50
70
100
100",~10",1.0ms~
IV'
TC' 250 C
~ 100
ffi
:::
50
a 20
e= 10
~
L::::
~2.0
ITI
30
50
70
lOOms
-
5.0
8
5.0
......
100
MOTOROLA SMALL-SIGNAL
0.5 0•5
f- Curv...pply
f- below , ..ad VCEO
1.0
~
Mps·A43"'"
MPS·A42_::;
t;;
,-,
2.0
5.0
10
2lJ
50 100
200
VCE. COLLECTOR·EMIITER VOLTAGE (VOLTS)
T~NSISTORS, FETs AND DIODES
2-385
I'
CURRENT LIMIT
• THERMAL LIMIT
(PULSE CURVESIPTC=2S0 C)
SECOND BREAKDOWN LIMIT
1. 0
IJ
2.0
30
1-.
0
1.0
20
.... r,
TA = 250 C
;(
I I I I III
i I.liJJ
o.2
10
500
VBE(on)IP VCE - 10 V
O. 4
7.0
FIGURE 5 - MAXIMUM FORWARD BIAS
SAFE OPERATING AREA
VBE("~) ~ ICIIB = 10
O. 8
5.0
Ie. COLLECTOR CURRENT (mA)
FIGURE 4 - "ON" VOL TAGES
1.2
I--=.
~
r0.5
V
/'
'z1'
0
1. 0
0.2
70
500
MPSA44
MPSA45
MAXIMUM RATINGS
Symbol
Rating
Unit
VCEO
400
350
Vdc
Collector-Base Voltage
VCBO
500
400
Vdc
Emitter-Base Voltage
VEBO
6.0
6.0
300
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
mWrC
-55to +150
°c
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Vdc
IC
Collector Current -
•
MPSA44 MPSA45
Collector-Emitter Voltage
,/~~'-
mW
Watts
23
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RruA
200
°CIW
Characteristic
1 Emitter
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
MPSA44
MPSA45
Collector-Emitter Breakdown Voltage
(lC = 100 pAdc, VBE = 0)
V(BR)CES
MPSA44
MPSA45
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
500
400
V(BR)EBO
Collector Cutoff Current
(VCB = 400 Vde, IE = 0)
(VCB = 320 Vde, IE = 0)
=
500
400
MPSA44
MPSA45
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCE = 400 Vde, VBE
(VCE " 320 Vde, VBE
400
350
ICBO
MPSA44
MPSA45
ICES
MPSA44
MPSA45
0)
= 0)
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
lEBO
6.0
-
-
Vdc
Vdc
Vdc
pAde
-
0.1
0.1
-
500
500
-
Vdc
nAde
0.1
pAde
ON CHARACTERISTICS.,)
= 1.0 mAde, VCE = 10 Vde)
= 10 mAde, VCE = 10 Vdc)
= 50 mAde, VCE = 10 Vde)
= 100 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage(1) (lC = 1.0 mAde, IB = 0.1 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
Base-Emitter Saturation Voltage (lC = 10 mAde, IB = 1.0 mAde)
DC Current Gain(1)
(lC
(lC
(lC
(lC
hFE
VCE(sat)
VBE(sat)
40
50
45
40
-
-
200
-
0.4
0.5
0.75
Vde
-
0.75
Vde
7.0
pF
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
(VCB
(VEB
=
Small-Signal Current Gain
=
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 10 mAde, VCE = 10 Vde, f =
20 Vde, IE
(lC
Cibo
-
hfe
2.0
Cobo
0.5 Vde, IC
10 MHz)
(1) Pulse Test: Pulse W,dth .. 300 p.o, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-386
13
pF
-
-
MPSA44, MPSA45
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
160
IIII
140
80
20
-
1.0
1.0
50
\
I II I
~
~
'"u
\
VB~!II~lt
to
Hill IILI
11111 II II
0.0
II
50k
1'.
TA = 250(;~
"-
L!; = 25°C
:-". 1.0.
....
~ 10~~~;:=l.!"1l1
F.-Current limit
~
Secondary Breakdown limit
20 '- ----Thermal Limil
r-tiValid for Duty Cycl • .;;
9
100
1.0 10
300
2.0
FIGURE 6 -
Cib
10%[-
MPS·A45.........
'MPS~A44"'~ ~
50
10
20
50 100
VCE. COLLECTOR VOLTAGE (VOLTS)
200
500
HIGH FREQUENCY CURRENT GAIN
'"
~
....
!
~
~ 20
t--
~
Cob
'"0;
::'<[:
50
0.3 0.5
10k
~ 100~~~~~~ll~''''~~~~~'~!!~~~
z
1.0
3k
10
50
2.0
Ik
~
~ 20~~==~44~t=+=~~j4~~~~~~
FIGURE 5 - CAPACITANCE
~
300
'"
100
10
100
1.0m.~00",
- 300
""_E 200
1
1.0
3.0
10
30
IC. COLLECTOR CURRENT (mA)
30
1000~~!!~II~~;~mm~~~1
i
VCE(S) @ ICIIB = 10
0.3
10
FIGURE 4 - ACTIVE REGION - SAFE OPERATING AREA
Lit
II IllllliLi
r-.
;!;
,
IIIII~
0.2
r--
TA = 250 C
lB. BASE CURRENT ("A)
in
~ 0.6
0.4
0.10
W
200 300
VBE(S) @ ICIIB - 10
>
.\
1\
0.20
:::j
III II 11111111
~
w
II
II
~
~
10
20
50
100
IC. COLLECTOR CURRENT (mA)
0.8
~
111111
IC = 50 rnA
w
\
TA = 25°C
!i
I II II
Ic=IOmA
to
~
TA = -55°C
2.0
Ic=I.OrnA
~ 0.40
I-""
TA = 25°C
FIGURE 3 - ON VOLTAGES
~
!:;
~ 0.30
--
100
I II I
in
VCE=IOV
'"
40
I
I
L
TA = 125°C
z 120
;;;:
1
B
0.50
-
TA = 25°C
m=lr
1.0
j
H
3.0
10
30
REVERSE BIAS (VOLTS)
100
~
3.0
iii
2.0
1.
1.5
1.0
300
r-
.,
VCE = 10 V
f = 10 MHz
TA = 25°C
V
f..0.1
~
0.2 0.3
1.0
3.0
10
}C. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-387
30
100
•
MPSA44, MPSA45
FIGURE 7 - TURN-ON SWITCHING TIMES ANO TEST CIRCUIT
10
5.0
.....
t'-....
2.0
'"'
I'....
o-----JL..---'I-------\---
r--VCC = 150 V
I-ICII8= 10
0.2 I - TA = 25°C
I - V8E(OFFI = 4.0 Vd,
0.1
3.0
1.0
•
.......
i"o
t,
-4.0 V
~ 1"1::--
10
30
IC. COLLECTOR CURRENT (mAl
50
Vee
100
Vout
*
---I
es<;; 4.0 pF*
I
____ JI
FIGURE 8 - TURN-OFF SWITCHING TIMES AND TEST CIRCUIT
10
5.0
1 2.0
~
+10.7 V
.....
t'...
t,
I"'-
........
1.0
-'
0.5
0.2 0.1
1.0
-
-
-
3.0
-11.4V-------I----
tl
VCC-150V
Ic/18 = 10
TA = 25°C
Vee
10
30
IC. COLLECTOR CURRENT (mAl
50
100
V out
I
;T~ Cs ~ 4.0 pF*
I
____ 1I
*Total Shunt Capacitance or Test Jig and Connectors.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-388
MPSA55, MPSA56
For Specifications,
See MPSA05, MPSA06 Data
MPSA62
thru
MPSA64
MAXIMUM RATINGS
Rating
Symbol
MPSA62 MPSA63
MPSA64
Unit
Collector-Emitter Voltage
VCES
20
30
Vdc
Collector-Base Voltage
VCBO
20
30
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
1.5
12
Watts
mW/oC
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
Emitter 1
THERMAL CHARACTERISTICS
DARLINGTON TRANSISTORS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
83.3
°C/W
Thermal Resistance, Junction to Ambient
ROJA
200
°C/W
PNP SILICON
Refer to MPSA75 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 !LAde, VBE = 0)
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
(VCB = 30 Vde, IE = 0)
Vdc
V(BR)CES
MPSA62
MPSA63, MPSA64
ICBO
MPSA62
MPSA63, MPSA64
Emitter Cutoff Current
(VBE = 10 Vde, IC = 0)
lEBO
20
30
-
-
-
100
100
-
100
nAdc
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 10 mAde, VCE
(lC
=
=
100 mAde, VCE
hFE
5.0 Vde)
=
5.0 Vde)
5000
10,000
20,000
MPSA63
MPSA64
10,000
20,000
-
-
1.0
1.5
-
1.4
2.0
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.01 mAde)
(lc = 100 mAde, IB = 0.1 mAde)
MPSA62
MPSA63, MPSA64
Base-Emitter On Voltage
(lC = 10 mAde, VCE = 5.0 Vde)
(lC = 100 mAde, VCE = 5.0 Vde)
MPSA62
MPSA63, MPSA64
VCE(sat)
VBE(on)
MPSA63, MPSA64
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(2) IT = Ihlel' Itest·
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-389
-
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 100 mAde, VCE = 5.0 Vde, I = 100 MHz)
-
MPSA63
MPSA64
MPSA62
•
MPSA70
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
100
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
625
5.0
mW
mWI'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.5
12
Watts
mWI'C
TJ, Tstg
-55 to +150
'c
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 1 .
TO-92 (TO-226AA)
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
PNP SILICON
Symbol
Characteristic
Max
Unit
Thermal Resistance, Junction to Ambient
ReJA
200
'CfW
Thermal Resistance, Junction to Case
Rruc
83.3
'CfW
Refer to 2N5086 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Max
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
Emitter-Base Breakdown Voltage
(IE = 100 ,.Adc, IC = 0)
V(BR)EBO
4.0
-
-
100
nAdc
hFE
40
400
-
VCE!sat)
-
0.25
Vdc
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(Vce = 30 Vdc, IE = 0)
ICBO
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
=
10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
SMALL-SIGNAL CHARACTERISncs
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vdc, f
Output Capacitance
(Vce = 10 Vdc, IE
= 0, f =
=
100 MHz)
100 kHz)
tr
125
-
MHz
Cobo
-
4.0
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-390
MPSA75
MPSA77
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
I
Symbol
MPSA75
Collector-Emitter Voltage
VCES
40
Emitter-Base Voltage
VEBO
10
Vdc
IC
500
Adc
625
5.0
mW
mWrC
-55to +150
°c
Collector Current -
Continuous
Total Device Dissipation
@TA = 25°C
Derate above 25°C
I
MPSA77
Unit
60
Vdc
PD
Operating and Storage Junction
Temperature Range
TJ. Tstg
,,'"~ •
Emitter 1
DARLINGTON TRANSISTORS
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Thermal Resistance. Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC
=
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
-
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 pAdc. VBE = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAdc. IE = 0)
V(BR)CES
MPSA75
MPSA77
40
60
Vdc
V(BR)CBO
MPSA75
MPSA77
40
60
Collector Cutoff Current
(VCB = 30 V. IE = 0)
(VCB = 40 V. IE = 0)
(VCB = 50 V. IE = 0)
ICBO
Collector Cutoff Current
(VCE = 30 V. VBE = 0)
(VCE = 40 V. VBE = 0)
(VCE = 50 V. VBE = 0)
ICES
Emitter Cutoff Current
(VBE = 10 Vdc)
lEBO
Vdc
-
-
-
100
-
500
nAdc
-
-
-
nAdc
-
-
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAo VCE = 5.0 V)
(lC = 100 mAo VCE = 5.0 V)
hFE
10.000
10.000
Collector-Emitter Saturation Voltage
(IC = 100 mA.IB = 0.1 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 100 mAo VCE = 5.0 Vdc)
VBE
-
-
-
1.5
Vdc
-
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - High Frequency
(lC = 10 mAo VCE = 5.0 V. f = 100 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-391
-
-
MPSA75, MPSA77
FIGURE 1 - DC CURRENT GAIN
200
TA = 1~5OC
;;;100
.. 10
SO
isz
- -
25°C
~ 30
...
~ 20
-,
-
'-
VCE· 2.0 V
5.0 V .c::
...
I-
~
10
7.0
~ 5. 0
g
•
--
.....10V r-
, " "-
-55°C
----r
3. 0
2. 0
0.3
0.5
0.1
1.0
.~
2.0
3.0
5.0
1.0
10
20
SO
30
10
100
200
300
IC. COLLECTOR CURRENT (mA)
FIGURE 2 - "ON" VOLTAGE
2.0
II
1111
TA
_1. 6
FIGURE 3 - COLLECTOR SATURATION REGION
~
o
>
;:: 1.2
..
...
l~ BE(Ion)k)CE.J..H1'
~W
!:;
o
> O. 8
>'
~
II I
IIJBE(~t)l@ IJ/I~ .11U
= 25°C
VCEb.t)@IC/IB ·1000
0
V
?! 1. 8
w
..
i--'" ..... ~
...
II
.
ICIIB -100_
!:; 1. 6
0
>
w
1. 4
ai
.r,
r--
~
u
~
0.5
1.0
2.0 3.0 5.0
10
20 30 50
IC. COLLECTOR CURRENT (mA)
100
200 300
!
1. 2
1.0
O.8
FIGURE 5 - ACTIVE REGION. SAFE OPERATING AREA
1000
VCE = 5.0 V
I 100 MHz
TA - 25°C
20
.....
>-
i!i
1.0
100 I'
1.0 ms
..-
... ...
.. 300
E
;:- 200
1\
iG
a
100 F=
0:
~
lI!
...:;:
~ 0.4
~
O. 1
2.0
100
5.0
10
ZO
50
IC. COLLECTOR CURRENT (mA)
200
~ 20
500
10
1.0
lK
1=
TA -
...
...
25°~~ ~>;S-°e
f\
...
-
lIr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-392
r'\.
- CURRENT LIMIT
THERMAL LIMIT
I-- ~ECO.NO ,B~E~K~~~N
(DUTY CYCLE':; 10%1
Z.O
4.0 6.0
10
ZO
VCE. COLLECTOR VOLTAGE (VOLTSI
-r-'
-
\
1.0 s
50
8
\
~,o.2
1.0
115 mA
lB. BASE CURRENT ("A)
10.0
4.0
3.0
100 mA
> 0.6 L-..':.L.J.-':WJJJL,-,+,.u:,-!-","::-,~'-':':JJlJ!~~~J..UL-'+,.w.J,JJ,LU
0.1 0.2 0.51.0 2.0 5.010 20 50100200 500 lK 2K 5Kl0K
FIGURE 4 - HIGH FREQUENCY CURRENT GAIN
!!i;
50 mA
0
0
0.3
I
IC - 10 mA
lI-
I-""~
0.4
o
2. 0
"
" I',
40
60
MPSA92
MPSA93
MAXIMUM RATINGS
Rating
Symbol
MPSA92 MPSA93
Unit
Collector-Emitter Voltage
VCEO
300
200
Vdc
Collector-Base Voltage
VCBO
300
200
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mWf'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
'2
Watts
mWf'C
TJ, Tstg
-55to +150
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04. STYLE 1
TO-92 (TO-226AAI
I
3 Collector
2~
•
..
Bas~
12
1 Emitter
3
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RruC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RruA
200
°CIW
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(')
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
300
200
V(BR)CBO
MPSA92
MPSA93
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vde, IE = 0)
Vdc
V(BR)CEO
MPSA92
MPSA93
300
200
V(BR)EBO
ICBO
MPSA92
MPSA93
Emitter Cutoff Current
(VBE = 3.0 Vdc, Ie = 0)
lEBO
5.0
-
-
Vdc
-
Vde
pAdc
-
0.25
0.25
0.1
!lAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc)
(lC = 10 mAdc, VCE = 10 Vdc)
(lC
= 30 mAde, VCE =
10 Vde)
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
hFE
Both Types
Both Types
40
-
MPSA92
MPSA93
25
25
-
25
VCE(sat)
MPSA92
MPSA93
Base-Emitter Saturation Voltage
(lC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
-
-
Vdc
-
0.5
0.4
-
0.9
Vdc
50
-
MHz
-
6.0
8.0
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
pF
Ccb
=
1.0 MHz)
MPSA92
MPSA93
(1) Pulse Test: Pulse WIdth", 300 /LB, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-393
MPSA92, MPSA93
FIGURE 1 - DC CURRENT GAIN
IS0
V~EJOV~C
TJ=+1250C
100
1 - - - +25OC
0
~
0 f - - -55bC
......
~~
:'\ ""'Iii;:....
0
'-
0
•
I5
1.0
3.0
2.0
7.0
5.0
10
20
30
50
'"
1'-
80
100
IC.COLLECTOR CURRENT(mA)
FIGURE 3 - CURRENT-GAIN-BANDWIDTH PRODUCT
FIGURE 2-CAPACITANCES
0
100
'- Tr 250C
o I-VCE = 20 Vdc
"
0
Cib
0
./
\
O-r-.
r---..
0
/'
0
0
2. 0
:--
I.0
0.1
.0.2
0.5
1.0
2.0
5.0
10
20
50
Cfb J
100 200
0
500 1000
5.0
2.0
VR. REVERSE VOLTAGE (VOLTS)
~c
500
II
II
0.8
---
V8~ @J CE J= io ~
- -
~ 0.6
!....
ffi
a:
g;
co
~
~
>-
O. 4
o. 2
o
1.0
VCE(..,) IiIICIlB = 10 mA
1/ II
2.0
5.0
100
50
20
FIGURE 5 - ACTIVE-REGION SAFE
OPERATING AREA
FIGURE 4 - "ON" VOLTAGES
1.0
10
IC. COLLECTOR CURRENT (mA)
10
20
-
50
200
100
'-'
a:
c
50
c
~
20
'-'
"
~i~f::ltci~~~~~~50C'-
~
10
100
""""-
"-
;:
5.0
3.0
r'..>..
625 mWTHERMAL
L1MITATION@TA-250C
-..;
- - -BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 1500C
5.0
10
20
30
1.0m.
\
MPS.A93~ ~
"-
1'..
MPS.A9~
r-.
"-
50
"-
100
VCE.COLLECTOR·EMITTER VOLTAGE (VOLTS)
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-394
,,00",\
"'
~~
200
300
MPSD55
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
25
Vdc
Collector-Base Voltage
VCBO
25
Vdc
IC
600
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.5
12
Watts
mWrC
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
~55to
+150
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
•
·C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
83.3
'CIW
Thermal Resistance, Junction to
Ambient(1)
R8JA
200
'CIW
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to 2N4400 for MPSDOS graphs.'
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
25
Collector-Base Breakdown Voltage
(lC = 10 I
a::
6.0
'"u:
w
'"0
4.0
u:
z
3.0
if
1/
w
~~
~
i3
'/
8.0
I-
5.0
6.0
4.0
IAGC' AUTOMATIC GAIN CONTROL CURRENT (mAl
z
'"
7
5.0
/'
~
........
....' ' /
2.0
1.0
7.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
IAGC' AUTOMATIC GAIN CONTROL CURRENT (mAl
10
COMMON-BASE y PARAMETERS
VCB= 10 Vdc. T A = 25°C
- f = 100 MHz - - - f = 200 MHz
FIGURE 4 - REVERSE TRANSFER ADMITTANCE
FIGURE 3 - INPUT ADMITTANCE
1f
1
100
~
60
i
40
z
'"
20
5
0
!1
-20
!
z
i
W..
80
~
~
~L
-
-
./
.......
1f 0.5
.........
r--......
-r--
~
-60
--
....w
I'"'-
~
'"a::
---
..........
..........
.-:::. ... -
w
u.
--
'7
~
~
w
....
U
U
U
U
U
~
~
U
U
W
0
-,...
o
1.0
1--
-
~b!!!...
rb-
1-2.0
--
:7
- -- -~/
....
-~rb
~
IC' COLLECTOR CURRENT (mAl
3.0
4.0
5.0
6.0
7.0
IC' COLLECTOR CURRENT (mAl
FIGURE 5 - FORWARD TRANSFER ADMITTANCE
FIGURE 6 - OUTPUT ADMITTANCE
8.0
9.0
10
2.0
..... -f...
80
60
,,'
V
,
"
a:
w
lI;
~ -20
a:
:; -40
~tb V'"
V
V"
""
"""-
,-::: ~
IItb
~ -80
r-::::- r--
9tb
- ....-
""'"--- -
L-....
gtb
V
1.0
2.0
~
1.4
0-
0.6
~
0.4
:::>
>-
8.0
9.0
10
bob
., ....
1.2
~ 0.8
~
/
3.0
4.0
5.0
6.0
7.0
IC. COLLECTOR CURRENT (mAl
w
I
- --- r- ...
1.6
c
!'--......
o
1.8
!i 1.0
V
/'
:l
~
1=:.:-
~
-60
!-100
0.1
a::
100
i:
i
- -
w
ffi
t! -100 o
1f
0.2
0-
>
w
1
_I
-g~/
'a::"
-80
8
0.4
:E
0.3
c
'"
-40
~
,g
0.2
-
I
~b_
....
~
2.0
... .....
--
.......
~
.-"
V
~b
3.0
4.0
5.0
6.0
7.0
IC' COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-398
-
bob
....-
1.0
.....
8.0
9.0
10
MPSH07
FIGURE 8 - CURRENT-GAIN BANOWIOTH PROOUCT
FIGURE 7 - COLLECTOR-BASE TIME CONSTANT
~ 1000
10
~ 9.0
....z
~
8.0
~
7.0
~
6.0
<..>
;:::
w
~0:
5.0
4.0
t; 3.0
j
8
e
..........
2.0
1.0
0
t;
o
1.0
2.0
5o
/
/
o
8
~ 900
TA ~ 2~OC I
VCS = 10 Vdc
g:
:>:
E;
!i:
/
--
SOO
~
500
~ 400
Z
/
/
1
TA =25 0/
- i--VCE = 10Vdc_ r - -
800
100
.,/
.............
................
~ 300
ffi 200
,.:.
/
V
~
~
3.0
4.0
~.O
6.0
1.0
IC. COLLECTOR CURRENT (mAl
8.0
9.0
.i-
10
.........
100
00
w
u
u
u
~
~
W
~
'"
~
IC' COLLECTOR CURRENT (mAl
FIGURE 9 - lOO·MHz ANO 200-MHz COMMON·BASE AMPLIFIER
t
o. IJlF
l
IAGC
JOHANSON
TRIMMER
RFC
lOJlH
1000 pF
INPUT~
1000 pF
~OUTPUT
FREQUENCY
100 MHz - U- 11 TURNS NO. 16 AWG.~" 1.0 .•
TAPPED l4 TURNS FROM COLD END.
200 MHz - L2 - 6 TURNS NO. 16 AWG.~" 1.0 .•
TAPPED l4 TURNS FROM COLD END.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-399
10
•
MPSH10
MPSHII
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Total Device Dissipation @TA = 25'C
Derate above 25'C
Po
350
2.8
mW
mW/,C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.0
8.0
Watt
mW/,C
TJ, Tstg
-55 to +150
'c
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
~()'-
"
23
2 Emitter
VHF/UHF TRANSISTORS
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIIJC
125
'CIW
Thermal Resistance, Junction to Ambient
RIIJA
357
'CIW
Characteristic
ELECTRICAL CHARACTERISTICS
NPN SILICON
(TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
25
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
30
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
3.0
-
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
-
100
nAdc
'Emitter Cutoff Current
(VBE = 2.0 Vdc, IC = 0)
lEBO
-
100
nAdc
hFE
60
-
VCE(sat)
-
0.5
Vdc
VBE
-
0.95
Vdc
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(lC = 4.0 mAde, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
(lC = 4.0 mAde, IB = 0.4 mAde)
Base-Emitter On Voltage
(lC = 4.0 mAde, VCE = 10 Vdc)
-
SMALL-8IGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lc = 4.0 mAde, VCE = 10 Vdc, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Common-Base Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
650
-
-
0.7
rb'C c
Collector Base Time Constant
(lC = 4.0 mAde, VCB = 10 Vdc, f = 31.8 MHz)
0.35
0.6
0.65
0.9
-
9.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-400
pF
pF
Crb
MPS-Hl0
MPS-Hl1
MHz
ps
MPSH10, MPSH11
COMMON-BASE Y PARAMETERS versus FREQUENCY
(VCB = 10 Vde, IC = 4.0 mAde, T A = 25°C)
Yib,lNPUT ADMITTANCE
FIGURE 1 - RECTANGULAR FORM
80
]
E
.5
~
10
['-...
~
w
<.>
.
;;;
40
I-
30
-10
Uib
60
z 50
~
....
~
~
-20
"'- r....
"'r-...
"ii
I-
-bib
"
e
~
FIGURE 2 - POLAR FORM
I"'""-- .... 1-.,
1
"'\
200
300
400
I. FREQUENCY (MHzl
500
..........
100
'-.....
-50
10
100
......
-40
r--..
20
f--IOOO MHz
-30
100
-60
1000
20
10
-30
1
400
2 0 -100
r---
40
50
60
10
80
Qib (mmhos)
COMMON-BASE Y PARAMETERS versus FREQUENCY
(VCB = 10 Vde, IC = 4.0 mAde, TA = 25°C)
Yfb, FORWARD TRANSFER ADMITTANCE
"ii
10
1: so
.§
.
..'"
..'"'"
.'"
w
<.>
50
....
....
40
z
lE
e
30
w
u.
20
z
10
--
FIGURE 3 - RECTANGULAR FORM
r----
-'-...
...... r--,.
"-
"-
-10
~ -20
"i
1:
i.
"
:---....J
SO~
'\
200
300
400
100'"
40
~
500
30
1000 MHz
20
-30
100
400
100
.5
"-
e
~
~
",Ib
l-
~
50
...... ~
I
--r--..
FIGURE 4 - POLAR FORM
SO
bIb
100
10
10
1000
SO
50
40
3D
I, FREQUENCY (MHz!
20
10
-10
-20
-30
1.2
1.S
2.0
9lb (mmho.1
Yrb. REVERSE TRANSFER ADMITTANCE
FIGURE 5 - RECTANGULAR FORM
~
FIGURE 6 - POLAR FORM
5.0
L
1:
.5
~lE
-brb
~ 3.0
V
'"
'":i! 2.0
.....
'"w
w
u.
'"
'"~
1.0
~
0
100
JpS.JII IL/
~ 4.0
-
./
.,/
V
- ----===- f-100
200
,/
.....-
f--
---
/
"ii
V
V -brb
~ps'ro
1:
200
-2.0
400
.5
..,
_
:2:
-3.0
100
f-,-4.0
-grb
400
I, FREQUENCY (MHzl
300
-1.0
500
100
1000 MHz
-5.0
1000
-2.0
-I.S
-1.2
-0.8
-0.4
Urb (mmhosl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-401
0.4
0.8
•
MPSH10, MPSH11
Yob. OUTPUT ADMITTANCE
FIGURE 8 - POLAR FORM
FIGURE 7 - RECTANGULAR FORM
10
1
oS
.,.
......
w
<.)
z
I:
c
.
9.0
1/
8.0
/
l/l000MHZ
8.0
I
7.0
bob
4.0
3.0
...~
2.0
0
100
oS
V
e 4.0
~
V
2.0
1--':'--300
400
500
700
2~0
100
~~
200
700
fw
f
V
1.0
6.0
~
j
5.0
....
:::>
a
./
6.0
• --:::>
10
1000
2.0
4.0
6.0
gob (mmhosl
f, FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-402
8.0
10
MPSH17
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
Po
350
2.81
mW
"
mWrC
23
TJ, Tstg
-55 to + 150
"C
Total Device Dissipation @ TA
Derate above 25"C
~
25"C
Operating and Storage Junction
Temperature Range
~(5'-
•
2 Emitter
CATV TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
ELECTRICAL CHARACTERISTICS (TA ~ 25"C unless otherwise noted.)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage
(lC ~ 1.0 mAde, IB ~ 0)
V(BR)CEO
15
-
-
Vdc
Collector-Base Breakdown Voltage
(lC ~ 100 !
~
35 -
fos& = 258 MHz
I~g = 213 MHz
IIF = 45 MHz
35
0
;;;
I
Oscillator Injection = 200 mV
z
;;:
I
40
/
15
'"z
0
~
>
z
25
//
15
V
'-'
~ 10
'"
5.0
1.0
2.0
3.0
4.0
5.0
o
o
5.0
f--
V
20
0
~ 10
'"
30 _
l
vc E=lovl
IC = 4.0 mAde
ISig=213MHz
IIF = 45 MHz
100
IC. COLLECTOR CURRENT (mAde)
200
400
300
Vi. OSCILLATION INJECTION (mV)
COMMON-EMITTER y PARAMETERS
(lC
= 4.0 mAde, VeE = 10 Vde, TA = 25°C)
FIGURE 3 -INPUT ADMITTANCE
FIGURE 4 - REVERSE TRANSFER ADMITTANCE
a
28
S
~
.5
.,.
.
w
'-'
z
lI0
.5
16
L
12
~ 8.0
,/
:!
...-
;::
4.0
/
z
~
I
I
.
..'"~
r--..bi• - -
./
. . . . . r--
I-
/
1/
~ 0.8
) / 9i.- I-20
-b~
~
/1
24
1.0
./
~
0.6
z
0.4
/
/
-
I-
w
V
'"
'"w
0.2
~
~
40
60
80
100
150
200
300
40
400
L
/'
........ ~
./
lIro
60
80
100
300
200
40Q
I. FREQUENCY (MHz)
I. FREQUENCY (MHz)
COMMON-EMITTER y PARAMETERS
(Ie
= 4.0 mAde, VeE = 10 Vde, TA = 25°C)
FIGURE 5 - FORWARD TRANSFER ADMITTANCE
a
140
:
120
I
~
100
~
80
'"
~
.'"
z
l-
40
~
20
~
£
s~
:----. g\.......
........
'"
"'" I'.
-
~ 1.2
o
;: 0.8
~
l=>
o
~ 0.4
0
60
80
100
200
300
/
;;;
-b,. - r--
400
-
o
40
60
........
.....
80
V
/
--
go/"
.-"
100
I. FREQUENCY (MHz)
I. FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-405
/
/
/
z
"'\.
40
V
w
'-'
-
V
./
boo
1.6
.5
............
60
e
'"
I
r-..
z
~
;;;
FIGURE 6 - OUTPUT ADMITTANCE
2.0
200
300
400
•
MPSH20
FIGURE 8 -CAPACITANCES
FIGURE 7 - CURRENT -GAIN-BANDWIDTH PRODUCT
~ 800
~
3.0
t;
i5
700
b'"
600
....,.
o
~2
TA = 25 0 C
'\' 500
2
;(
'" 400
2.0
~VCE=lOVde
.-V......
V
«
V--
TA=250 C
~
"-
oS
~
~
~
U
~
:3
,.:.
1.0
I-- I-
-
0.7
0.5
.,..,.ffi
Cob
Ceb
::>
~
0.3
,.:. 300
-
1.0
2.0
5.0
3.0
7.0
10
0.1
0.2
0.5
1.0
2.0
5.0
10
-
20
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAde)
FIGURE 9 - MIXER TEST CIRCUIT
1.5-15pF
fsig = 213 MHz
RS =50 OHMS
L2
T2
fosc = 258 MHz
OSCILLATOR INJECTION
RS= 50 OHMS
-
2.0
pF
1.0 k
~"'l':~'
+10 Vde
(-)VEE
L1 = 3 TURNS '18 ENAMELED WIRE,
1/4" I.D., AIR WDUND, WINDING LENGTH 1/2";
BASE TAPPED 1 TURN FROM GROUND.
L2 -10 TURNS 126 INSULATED WIRE, WOUND
ON 114" I.D. COIL FORM, ARNOLD PART
NO.Al-l0 IRON POWDER CDRE.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-406
50
100
MPSH24
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
50
mAde
Po
350
2.B
mW
mWrC
TJ, Tstg
-55to +135
°c
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
•
VHF TRANSISTOR
NPNSILICON
THERMAl CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
30
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
-
Vde
-
Vde
4.0
-
-
Vde
ICBO
-
-
50
nAde
t,.
400
620
-
MHz
Ceb
-
0.25
ON CHARACTERISTICS
DC Current Gain
(lC = B.O mAde, VCE
=
10 Vde)
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = B.O mAde, VCE = 10 Vde, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
Conversion Gain
(213 MHz to 45 MHz)
(lC = B.O mAde, VCC
(60 MHz to 45 MHz)
(lC = B.O mAde, VCC
=
=
100 MHz)
0.36
pF
1.0 MHz)
dB
GC
= 20 Vde, Oscillator Injection =
150 mVrms)
19
24
-
= 20 Vde,
150 mVrms)
24
29
-
Oscillator Injection
=
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-407
MPSH24
CONVERSION GAIN CHARACTERISTICS
(TEST CI RCUIT FIGURE 7)
(VCC; 20 Vdc, RS; RL; 50 Ohms, fif; 44 MHz, B.W.; 6.0 MHz)
FIGURE 2 - CONVERSION GAIN versus INJECTION LEVEL
FIGURE 1 - CONVERSION GAIN versus COLLECTOR CURRENT
40
40
I
~,
z
:;;:
to
Z
0
I
I
fsig = 60 MHz, fosc:: 10 MHz
30
20
l'
in
...'">
-
~-
?
f.---
Z
~
L
>
z
10
o
2.0
6.0
4.0
8.0
10
~
Ose Inj:: 150 mVrms
I Sig = 213 MHz. lose = 275 MHz _
I
8
to
o
/"
20
0
0
IE!
......
z
:;;:
to
z
..,
30
~
I Sig = 213 MHz. lose = 275 MHz _
--
'S19 = 60 MHz, fosc = 104 MHz
.,
IC = 8.0 mAde
to
10
12
14
100
16
IC. COLLECTOR CURRENT (mAde)
300
200
400
Vi. OSCILLATOR INJECTION (mV)
COMMON-EMITTER y PARAMETERS
(VCE; 15 Vdc, TA; 25°C)
FIGURE 3 - INPUT ADMITTANCE
FIGURE 4 - REVERSE TRANSFER ADMITTANCE
50
~ 40
~
E
..,
w
z
«
0.1
/
--
r--
30
:;:
0
.... /
20
I-
~
.
>=
~
10
......
-== .....c:--::
I--
4.0
6.0
8.0
0.06
0.04
10
12
14
16
18
Qre
< -0 01
'"
~
~
0.02
o
20
o
20
4.0
IC. COLLECTOR CURRENT (mAde)
~
f=45MHz
,....-
E
..,z
w
160
«
1=
:;:
"«
/
120
'"w
;ii
80
I0
'"
~
~
!.
40
/'
V91,
,I
10
12
14
16
18
FIGURE 6 - OUTPUT ADMITTANCE
f =45 MHz
'\.
~
1..,
06
J
w
/'
V
20
0.8
~
:;:
./"
gO!;
04
"«
I-
~
~
/
o
............
0.2
........
/bl,
. . . .V
2.0
8.0
Z
L
~
'"z
~
V
6.0
IC. COLLECTOR CURRENT (mAde)
FIGURE 5 - FORWARD TRANSFER ADMITTANCE
~ 200
mmho
Iw
--
b\,
~~
2.0
~
'"w
'"~
~
my
f-
/
-b re
~
«
b"
/
~ 0.08
gie
.-
-
.........
lI-
«
1--' ......
---213MHz
60 MHz
1=45MHz
~
E
/
/
-
V
V
V
boe
o
4.0
6.0
8.0
10
12
14
16
18
20
IC. COLLECTOR CURRENT (mAde)
o
2.0
40
6.0
8.0
10
12
14
IC. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-408
16
18
20
MPSH24
FIGURE 7 - VHF MIXER TEST CIRCUIT
(fif
=44 MHz, B.W. =6.0 MHz)
fsi
fose
Cl
C2
C3
C4
C5
L1
L2
L2
Cl
1.5-20 pF
8.0·60 pF
8.0-60 pF
3.0-35 pF
1.5·20 pF
5 Turns #26
3 Turns #16
Air,TaplTurn Air,TapY2Turn
10 Turns #26 10 Turns #26
Air
Arnold Al-l0
O.O~
.F
C2
~470PF
Ohmit. Z235
-VEE
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-409
-=- 60 MHz
TRAP
10 k
Core
L3
RL = 50 n
470
pF
~ +20 V
•
MPSH30
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
3.0
Vdc
IC
50
mAdc
Total Device Dissipation @ T A = 25"C
Derate above 25"C
Po
350
2.8
mW
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
1.0
8.0
Watt
mWrC
TJ, Tstg
-55to +150
"C
Symbol
Max
Unit
R8JC
83.3
"CiW
R8JA(1)
200
"CiW
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
1/':()--'
2
2 Emitter
3
IF AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS
NPN SILICON
(TA = 25"C unless otherwise noted.)
Characteristic
Max
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 100 IIoAdc, IE = 0)
V(BR)CBO
20
Emitter-Base Breakdown Voltage
(IE = 100 IIoAdc, IC = 0)
V(BR)EBO
3.0
-
ICBO
-
50
nAdc
hFE
20
200
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAdc)
VCE(sat)
0.1
3.0
Vdc
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 5.0 mAdc)
VBE(sat)
-
0.96
Vdc
300
800
MHz
0.65
pF
6.0
dB
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
Vdc
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 4.0 mAde, VCE
= 5.0 Vdc)
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
Noise Figure
(VAGC = 2.75 Vde, RS
=
IT
= 100 MHz)
NF
-
Gpe
22.5
31
dB
VAGC
4.4
5.4
Vdc
Ceb
1.0 MHz, emitter guarded)
= 50 ohms, f = 45 MHz)
FUNCTIONAL TESTS
Power Gain
(VAGC = 2.75 Vdc, RS
= 50 ohms, f = 45 MHz)
Forward AGC Voltage
(Gain Reduction = 30 dB, RS
= 50 ohms, f = 45 MHz)
(1) R8JA is measured with the device soldered into a typical printed circuit board.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-410
MPSH34
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
MAXIMUM RATINGS ("",
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
50
mAde
PD
350
2.8
mW
mWrC
TJ, Tstg
-55 to +135
"C
Collector Current -
Continuous
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Operating and Storage Junction
Temperature Range
•
IF TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Refer to MPSH24 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
-
Collector-Base Breakdown Voltage
(lC = 100 ,.Ade, IE = 0)
V(BR)CBO
40
-
Emitter-Base Breakdown Voltage
(IE = 10 ,.Ade, IC = 0)
V(BR)EBO
4.0
-
-
-
-
50
40
-
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
Vde
Vde
Vde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 7.0 mAde, VCE = 15 Vde)
(lC = 20 mAde, VCE = 2.0 Vde)
hFE
-
-
15
-
Collector-Emitter Saturation Voltage
(lC = 7.0 mAde, IB = 2.0 mAde)
VCE(sat)
-
-
0.5
Vde
Base-Emitter On Voltage
(lC = 7.0 mAde, VCE = 15 Vde)
VBE(on)
-
-
0.95
Vde
IT
500
720
-
MHz
Ceb
-
0.25
0.32
pF
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 15 mAde, VCE = 15 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
=
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-411
• Designed for UHFNHF Amplifier Applications
• High Current Bandwidth Product
fT = 2000 MHz @ 10 mAdc
MPSH69
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
•
1/~()"-'
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Base Voltage
VCBO
15
Vde
Emitter-Base Voltage
VEBO
4
Vdc
Po
350
2.81
mW
mWrC
-55to +150
·C
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
2
, Emitter
3
RF AMPLIFIER TRANSISTOR
PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
15
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
4
ICBO
-
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
-
-
-
Vde
Vde
Vde
100
nAde
-
MHz
0.3
pF
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE = 10 Vde)
SMALL-8IGNAL CHARACTERISnCS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCE = 10 Vdc, IE = 0, f
=
1.0 MHz)
IT
2000
Crb
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-412
-
MPSH81
CASE 29-04, STYLE 2
TO-92 (TO-226AA)
11 ~()'~O'
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vde
Collector-Base Voltage
VCBO
20
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
Po
350
2.81
mWrC
-55 to +150
°c
Rating
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
mW
2
2 Emitter
3
RF AMPLIFIER TRANSISTOR
PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
Characteristic
Typ
Max
Unit
-
-
Vde
20
-
-
Vde
3.0
-
-
Vde
-
100
nAde
-
100
nAde
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 10 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 2.0 Vde, IC = 0)
lEBO
-
hFE
60
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 5.0 mAde, VCE
=
10 Vde)
-
Collector-Emitter Saturation Voltage
(lc = 5.0 mAde, IB = 0.5 mAde)
VCE(sat)
-
-
0.5
Vde
Base-Emitter On Voltage
(lc = 5.0 mAde, VCE = 10 Vde)
VBE(on)
-
-
0.9
Vde
IT
600
-
-
MHz
Ceb
-
-
0.85
pF
Cee
-
-
0.65
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vde, f
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
=
=
100 MHz)
1.0 MHz)
Collector-Emitter Capacitance
(lB = 0, VCB = 10 Vde, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-413
•
MPSH81
TYPICAL COMMON-BASE y-PARAMETERS
(VCB = 10 Vdc. T A = 25 0 C. Frequency Points in MHz)
FIGURE 1 - INPUT ADMITTANCE
-30
930~~Z__""",
-40
~
'\
-60
I
~
~
•
.s -70
"'"
~
-80
E
-90
r.-...
-1.0
IC = 4.0 mA
-2.0
I
1250 MHz
N--..
r'{
~
\ 100 MHz
B.OmA
"":-.,. "-..:\
\
-100
40
20
60
"
11/
-6.0
-7.0
~
100
80
120
1...,:"'-
-B.O
-2.4
140
-2.1
V /
-1.B
-1.5
1
i
BO
12
j'---....
........ ~
12mA
\
~'A--
\
\
70
\
IC = 4.0 mA
0
40
30
20
-120
-100
-0.6
-11.3
-80
-60
~SY_",-A '---
V/ ~ .....
10
I . . . . r-...
I.........
-I
\
60
-0.9
FIGURE 4 - OUTPUT ADMITTANCE
-.!.!!2MHZ
\
~
-1.2
J
~ 930
14
110
0
--
-
Ic=4.0mA
Urb. (mmhos)
FIGURE 3 - FORWARD TRANSFER ADMITTANCE
100
/ ~
_-41"'-
9ib. (mmhos)
120
250
12m~ l{':omA
i-5.0
I
~"
[f-T- ~450
-3.0
1-4·0
\
12~
-110
-20
,
.~ ~ - , 100MHz
t--!0 MHz
",,,,-
-50
FIGURE 2 - REVERSE TRANSFER ADMITTANCE
-40
Ic=4.0mA
~ B.O
.s
1
'\.\;30
I
............
","'
~
6.0
n
1-1-4
4.0
2.0
20
-20
/. ~
///
~
r-.... ......... 450
')'. ~
-2.0
-0.5
40
100 MHz
1.5
gob. (mmhos)
Sfb. (mmhos)
FIGURE 5 - CURRENT-GAIN - BANDWIDTH PRODUCT
¥
~
1000
t; 900
/'
::>
g
g:
:r
t-
o
8110
/
700
8110
i§
:i! 500
'"1400
z
«
to
3011
~
100
- -
-
I
I
VCE = 10 V
If= 1001MHZ-
~ 200
w
::>
c..>
.c:
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-414
12mA
'l_450
250
1.0
0.5
930
2.0
2.5
3.0
3.5
MPSLOI
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
120
Vde
Collector-Base Voltage
VCBO
140
Vde
VEBO
5.0
Vde
Emitter-Base Voltage
Collector Current -
Continuous
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
IC
150
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mWrC
"
TJ, Tstg
-55to +150
°c
2 3
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIiJC
83.3
°CIW
Thermal Resistance, Junction to Ambient
RIiJA
200
°CIW
Operating and Storage Junction
Temperature Range
.~(S~"
•
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Rafar to 2N5550 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(IC = 1.0 mAde, IB = 0)
V(BR)CEO
120
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
140
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
5.0
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vde
Vde
Vde
Collector Cutoff Cu rrent
(VCB = 75 Vde, IE = 0)
ICBO
-
1.0
. !lAde
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
-
100
nAde
hFE
50
300
-
ON CHARACTERISnCS
DC Current Gain(l)
(lC = 10 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)(l)
VBE(sat)
-
Vde
0.20
0.30
Vde
1.2
1.4
SMALL-SIGNAL CHARACTERISncs
IT
60
-
MHz
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Ceb
-
8.0
pF
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
hfe
30
-
-
Current-Gain - Bandwidth Product(l)
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
(1) Pulse Test: Pulse Width
=
300 /IS, Duty Cycle
=
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-415
MPSL51
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
100
Vde
Collector-Base Voltage
VCBO
100
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
600
mAde
Po
625
5.0
mWrC
1.5
12.0
mWrC
-55to+150
°c
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Total Device Dissipation @ TC
Derate above 250C
= 25°C
Operating and Storage Junction
Temperature Range
Po
TJ, Tstg
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
1/~()'''~'
mW
Watts
2
1 Emitter
3
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
PNPSIUCON
Symbol
Max
Thermal Resistance, Junction to Case
RruC
83.3
0c/w
Thermal Resistance, Junction to Ambient
RruA
200
°C/W
Characteristic
Unit
Refer to 2N5400 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
100
Collector-Base Breakdown Voltage
(lC = 100 /lAde, IE = 0)
V(BR)CBO
100
-
Emitter-Base Breakdown Voltage
(IE = 10 /lAde, IC = 0)
V(BR)EBO
4.0
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vde
Vde
Vde
1.0
/lAde
lEBO
-
100
nAde
hFE
40
250
-
-
0.25
0.30
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
ON CHARACTERISTICS(1)
DC Current Gain(l)
(lc = 50 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
Vde
-
Vde
1.2
1.2
SMALL-8IGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Cobo
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
h'e
60
-
MHz
-
8.0
pF
20
-
-
(1) Pulse Test: Pulse Test = 300 p.S, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-416
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
MPSWOl
MPSW01A
Unit
40
Vde
VCBO
MPSWOl
MPSW01A
40
50
Emitter-Base Voltage
Continuous
VEBO
5.0
Vde
IC
1000
mAde
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
1.0
B.O
Watt
mWf'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
2.5
20
Watts
mWf'C
TJ, Tstg
-55 to +150
'c
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
RruC
50
'CIW
Thermal Resistance, Junction to Ambient
RruA
125
'CIW
ELECTRICAL CHARACTERISTICS
MPSW01, A
Vde
30
Collector-Base Voltage
Collector Current -
Value
VCEO
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
~-E9
1 Emitter
ONE WATT
HIGH CURRENT TRANSISTORS
NPN SILICON
(TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 }'Ade, IE = 0)
V(BR)CEO
V(BR)CBO
MPSWOl
MPSW01A
Emitter-Base Breakdown Voltage
(IE = 100 }'Ade, IC = 0)
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 40 Vde, IE = 0)
30
40
MPSWOl
MPSW01A
ICBO
MPSWOl
MPSW01A
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
Vde
-
5.0
-
-
0.1
0.1
-
0.1
55
60
50
-
40
50
V(BR)EBO
-
Vde
Vde
}'Ade
}'Ade
ON CHARACTERISTICS(1)
-
DC Current Gain
(lc = 10 mAde, VCE = 1.0 Vde)
(lc = 100 mAde, VCE = 1.0 Vde)
(lc = 1000 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 1000 mAde, IB = 100 mAde)
VCE(sat)
-
0.5
Vde
Base-Emitter On Voltage
(lc = 1000 mAde, VCE
VBE(on)
-
1.2
Vde
IT
50
-
MHz
Cobo
-
20
=
1.0 Vde)
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE = 10 Vde, f = 20 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
1.0 MHz)
(1) Pulse Test: Pulse Width..; 300 !,-s, Duty Cycle..; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-417
pF
..
MPSW01, A
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
200
l"-
~
t---...
"",
~
a
>
13
II
=
.
500
1000
0.8
~
...i!
11111 I II 11111
..,
°,
111111 I LJ..HtlUl-
......
!-12
..,'"
1-
..."...
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
la. aASE CURRENT (mAl
-1.6
m
0.2
VCE(SATI @ IC
20
50 100
BVa lor VBE
2.0
5.0 10
I-
~ -2.4
Ila;.!-
t
II II 11111
o1.0
-2.81.0 2.0
20
50 100 200 500 1000
IC. COLLECTOR CURRENT (mAl
5.0 10
FIGURE 6 - CURRENT GAIN-BANDWIDTH PRODUCT
~
::E
300
g
Q
li1
200
~
100
70
50
20
50 100 200 5001000
IC. COLLECTOR CURRENT (mAl
FIGURE 6 - CAPACITANCE
0
;:=
i..,
"'4
"
~
~ -2.0
...ZCi
!:b
:P
~
:>
~
"-a
:P
Q
$
~ 0.4
~
"
'$
M
"
-0.8
i--'
~
.
",I
'"
FIGURE 4 - TEMPERATURE COEFFICIENT
~~~J\I~I~
~ 0.6
M
"-
0.01 0.02
VSE(SATI @ ICIIS ; 10
TJ;25°C
"
~
M
'"
FIGURE 3 - ON VOLTAGES
1.0
.
" "
".
'1.1
"
0.4
o
50
100
200
IC. COLLECTOR CURRENT (mAl
20
g-
"
TJ; 25°C
M
~'-
n
~ 0.2
50 r-- I- VCE; 1.0 V
TJ; 25°C
30
10
0.6
0:
..,'"
r- t-
1\
~ 0.8
~
•
Tn m
1.0
300
f.--I--'
/
TJ ; 25°C
"-
L--I0
V
'"
t--...
r---...
0
r- tr- t-
VCE·l0V
TJ ; 25°C
f;20MHz
r- r-
Cibo
>--
0",-
:I
~
30
10
20
50
100
200
IC. COLLECTOR CURRENT (mAl
1000
0
Cobo
Cibo
'Cobo
5.0
1.0
10
15
2.0
3.0
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-418
20
4.0
25
5.0
MPSW01, A
FIGURE 7 - ACTIVE REGION·SAFE OPERATING AREA
IK
1001"
500
«
1.0 ms
"-
.E
1.0 •
5 200 r--- f- TA = 250
g§
Duly Cycle';; 10'11>
a 100
'"""
~
50
8
~
20
\.
,;rC = 25°
"
11'h
"-
"\l\
limit
~ ~'Current
~ Thermal limit
~ rlseconj Brti°j" IT'I
10
10
III
2.0
MPSWOl
r
Mr SW 1A
5.0
10
20 30 40
VCE. COLLECTOR·EMITTER VOLTAGE IV)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-419
•
MPSW05
MPSW06
MAXIMUM RAnNGS
Rating
Symbol
Unit
VCEO
60
80
Vde
Collector-Base Voltage
VCBO
60
80
Vde
Emitter-Base Voltage
Collector Current -
•
MPSW05 MPSW06
Collector-Emitter Voltage
Continuous
VEBO
4.0
Vde
IC
500
mAde
Totsl Device Dissipation @ TA
Derate above 25·C
=
25'C
PD
1.0
8.0
Watt
mWf'C
Total Device Dissipation @ TC
Derate above 25·C
=
25·C
PD
2.5
20
Watts
mWf'C
TJ, Tstg
-55 to +150
·C
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
.:~
1 Emitter
THERMAL CHARACTERISTICS
Charactsrlstlc
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
50
·C/W
Thermal Resistance, Junction to Ambient
RruA
125
·C/W
ELECTRICAL CHARACTERISTICS
ONE WATT
AMPLIFIER TRANSISTORS
NPN SILICON
(TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(Ie = 1.0 mAde, IB = 0)
Vde
V(BR)CEO
MPSW05
MPSW06
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 40 Vde, IB = 0)
(VCE = 60 Vde, IB = 0)
MPSW05
MPSW06
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
MPSW05
MPSW06
ICEO
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
4.0
-
-
0.5
0.5
60
80
lEBO
-
Vde
pAde
pAde
0.1
0.1
0.1
pAde
ON CHARACTERISTICS(1)
-
DC Current Gain
(lC'= 50 mAde, VCE = 1.0 Vde)
(lC = 250 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 250 mAde, IB = 10 mAde)
VCE(sat)
-
0.40
Vde
Base-Emitter Saturation Voltage
(lC = 250 mAde, VCE = 5.0 Vde)
VBE(sat)
-
1.2
Vde
50
-
MHz
-
12
pF
80
60
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 200 mAde, VCE = 5.0 Vde, f
=
t,100 MHz)
Output Capaeitsnee
(VCB = 10 V, f = 1.0 MHz)
Cobo
(1) Pulse Test: Pulse Width", 300 p.S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-420
MPSW05, MPSW06
FIGURE' - D.C. CURRENT GAIN
400
I
TJ ~ 115°C
I-- - I - -
z
~ 200
f-'
>-
~
~
~ 100
I--
~
r-
80
r-
-
-
f-
---
25°C
f..--55°C
I-- r--
:--I - I-~
-
I'
-
r-
I-~
i"I
VCE '1.0V
~
""
~
-...... ~
~
"'
60
~
a
4
OS
07
10
1.0
30
S.O
50
7.0
10
20
30
IC. COLLECTOR CURRENT (mA)
FIGURE 2 - COLLECTOR SATURATION REGION
10
;;;
~
~
111111
0.8
III~I!IIO mA
mA
'"
'"
'"o~
>
1111
S~
I
SOOmA-
~
~
06
0
"'
'"'"
~
0.4
\
0.2
<>
>
.1
06
_
1111
II
1111
-H::tJ:t:I:U:=-
vaE:on:
~ J~~ :110 v
-I-
o
O.OS
"-
01
0.2
--
t---..
r--r-.
O.S
1.0
2.0
5.0
lB. BASE CURRENT (mAl
10
0.2
r--- VCE("')@ Ic/la ~ 10
20
0
05
50
lill
10
20
SOlO
20
SO
IC. COLLECTOR CURRENT (mA)
~ -12
.5
0
0
G
~
-2.0
----
~ -2.4
=
.
-'"
V
tl -16
::>
ai
u
./
elbo
-
Z
u-
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (mA)
100
200
r---
10
8. 0
Cobo-
N-0.2
0.5
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-421
2SoC
'-
4.0
0.1
SOO
~
0
::
;3
TJ
B. 0
1.0
500
""'-
;:!:
u
>-
-2.8
0.5
200
'=
>-
OVB for VBE
-
100
FIGURE 5 - CAPACITANCE
0
~
-
:...--- f-""
0.4
-O.B
~
I---
>
>'
FIGURE 4 - BASE-EMITTER
TEMPERATURE COEFFICIENT
i
500
0
u
~
II
VaE("')@ Ic/la ~ 10
~
o
~
~~ 1~12S0C
0.8
'"
~
300
200
100
FIGURE 3 - ON VOLTAGES
10
TJ I~ 2;OC I
III
IIbJ~A- 2~0~1
70
20
50
100
•
MPSWOS, MPSW06
FIGURE 6 - CURRENT GAIN - BANDWIDTH PRODUCT
300
%
i!
I II
....
t; 200 _ VCE' 2.0V
TJ =250 C
'"
b
~
100
'--
r\
\
"'"
'"g:
FIGURE 7 - ACTIVE REGION - SAFE OPERATING AREA
V
C 2k
•
~
i
B
10
.t::
TA = 25°C
...
:i 100
'" 50
~
0
0
2.0
500
~ 2001--
20
10
1.0
g§
B
....,
lilk
z
;
z
Ouly Cycle .. 10lll
.§.
3.0
5.0 7.0
10
20
30
50
70 100
200
IC. COLLECTOR CURRENT (mAl
-2.0
TC = 25°C 'S,,1.0 s
"I..
de i"- :-de
Currlnt limit
Thermal limit
Second Breakdown Limit
=
f- MPSW05
f- MPSW06
5.0
10
20
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-422
,..-1.0 m,'
1001"
~
60 80100
MPSW10
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
300
Vde
Collector-Base Voltage
VCBO
300
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
500
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
1.0
8.0
Watt
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
2.5
20
Watts
mWrC
TJ, Tstg
-55to +150
"C
Symbol
Max
Unit
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
3 Collector
.!.~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
Thermal Resistance, Junction to Case
R8JC
50
"CIW
Thermal Resistance, Junction to Ambient
R8JA
125
"CIW
ONE WATT
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to MPSW42 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
300
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 !LAde, IE = 0)
V(BR)CBO
300
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 !LAde, IC = 0)
V(BR)EBO
6.0
-
Vde
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
ICBO
-
0.2
!LAde
Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)
lEBO
-
0.1
!LAde
25
-
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
hFE
40
40
Collector-Emitter Saturation Voltage
(lC = 30 mAde, IB = 3.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 30 mAde, VCE = 10 Vde)
VBE(on)
-
IT
Ceb
-
0.75
Vde
0.85
Vde
45
-
MHz
-
3.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
=
1.0 MHz)
(1) Pulse Test: Pulse Width"" 300 p.s, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-423
•
MPSW13
MPSW14
. MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
30
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
IC
1.0
Adc
1.0
B.O
Watt
mWrC
Po
2.5
20
Watts
mWrC
TJ, Tstg
-55to +150
'C
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
•
=
25'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Operating and Storage Junction
Temperature Range
Po
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
Collector 3
Emitter 1
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
Thermal Resistance, Junction to Case
RruC
50
'C/W
Thermal Resistance, Junction to Ambient
RruA
125
'CIW
ONE WATT
DARLINGTON TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
-
Vde
100
nAde
100
nAde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 100 pAde, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, Ii: = 0)
ICBO
Emitter Cutoff Current
(VEB = 10 Vdc, IC,,,,, 0)
lEBO
-
ON CHARACTERISTICSI')
DC Current Gain
(lC = 10 mAde, VCE
(lC
=
'00 mAde, VCE
= 5,0 Vdc)
= 5.0 Vdc)
hFE
MPSW13
MPSW14
5000
10,000
-
MPSW13
MPSW14
10,000
20,000
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 0.1 mAde)
VCE(sat)
-
1,5
Vdc
Base-Emitter On Voltage
(lC = 100 mAde', VCE = 5.0 Vde)
VBE(on)
-
2,0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 5.0 Vdc, f = '00 MHz)
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(2)
= Ihfel" ftest·
tr
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-424
MPSW13, MPSW14
FIGURE 1 - ACTIVE REGION SAFE OPERATING AREA
---Current Limit
DUI; Cycle
3.0 k ----Thermal limit
- - Second Breakdown limit
.. 2.0 k
.§.
iBl.O
,
~ 500
,
TA = 25°C
I
200
1.5
2.0
TC = 25°C t-'
,
ii"
FIGURE 2 - DC CURRENT GAIN
~
~
!5
.....
~
'"
~
~
!:;
25°C
20 k
u
u
co 10 k
tf! 7.0 k
... 5.0 k
55°C
VCE-5.0 V 1-1-
..J..+1'
3.0 k
II
2.0 k
5.0 7.0 10
20 30
50 70 100
IC. COllECTOR CURRENT (mA)
1-4
in
!:; 1.2
'"w
~
'"~
...
'"
1.0
:>
0.8
IIIII
TJ=250C
200 300
11
2.5
II
.!VBE(sat)
1111
.! I.
@ IcliB = 1000
I-T-I-TI
......-- ~
I--: .- ...-
11111
0.6
5.0 7.0 10
I~~ 1~1~~ ~O InJ
~.s
lilllIl
TJ - 25°C
I~~O ~ ~0~1~,1.-+t-++tt1m1
i
;
1.5 H--Hr+tttttl-t-i-I-ttffitH-H-ttHtH--t-H-rttttt1
8
1.0 H--H-\l-tttttl-'d-+-l-ttttttr't:H-t"I;;HtH--t-H-rttttt1
~
-2.0
"APPUES FOIIIC~8"hfE/3.o
-r
III
u
J [W 1
25°C TO 125°C
...-
r--6vB FOIl YBE
~
~
~
I
200 300
-4.0
i1:!
-5.0
-I""""
- 55°C TO 25°C
11111
20 30
50 70 100
Ic. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-425
V
J..U.H--I
1
-+-
II II
-6.0
5.0 7.0 10
500
I-'"
I LW----±::r- ....... 1-'"
- 55°C TO 25°C
0-
-
i5lcI~ Imoci
I
"6vc FOIl VCE(sat1
~
§
20 30
50 70 100
Ie. COllECTOR CURRENT (mA)
1111111 II l!l
2.0 H+-I'-HttHl-+-H'-H-lItfl-+t-It-ttttttt-+H+t-1-ttH
it -3.0
~
1111 II
1111 I I
:: 0.5 L-L-,-,~.u.u'-'-.J......l...L.L.u.u'-'--'--'-+Lu..w-,-,---,--,-,-u..w
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
lB. BASE CURRENT I/LAI
~
VBElo.) @ VCE = 5.0 V
VCE(sat) @ IclIB = 1000
II I
III II I
FIGURE 5 - TEMPERATURE COEFFICIENTS
~ 1--1-
I I
I I
IIII
w
500
:::++=Rt-i 1
II III
20
S!
-1.0
I I
I I
•
~30
....
3.0
FIGURE 4 - ON VOLTAGES
1.6
.....
FIGURE 3 - COLLECTOR· SATURATION REGION
30 k
0-
.......
.........
5.0
10
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTSI
200 k
I-- l - I-
s'"
1.0
~
....
.=;
125°C
~
.......
i"o.
,
8
TJ
1.0 mS
,
t;=
100 k
70 k
50 k
~1001's
'"
k
k10%-
I
I
200 300
500
MPSW13, MPSW14
FIGURE 6 -
FIGURE 7 - CAPACITANCE
HIGH FREQUENCY CURRENT GAIN
40
z
;;0
<.0
20
VCE· 5.0 V
f'" 1QOMHz
TJ·250C
t\
j
B
•
~
V
10
08
10
~
w
1\
"z
;!'
<.0
13
;;; 06
::
It
1)l 04
u
•
02
05
TJ': 25°C
7.0
Cibo ICobo
5.0
r--..
5
""
"
Jill
-
~\..
,/
2.0
3.0
20
10
20
05
10
20
50
100
200
004
500
01
0204
10
20
40
VR. REVERSE VOLTAGE (VOLTS)
IC. COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-426
10
20
40
MPSW42
MPSW43
MAXIMUM RATINGS
Rating
Symbol
MPSW42 MPSW43
Unit
Collector-Emitter Voltage
VCEO
300
Collector-Base Voltage
VCBO
300
Emitter-Base Voltage
VEBO
6.0
Vde
IC
SOO
mAde
Watt
Collector Current -
Continuous
200
Vde
200
Vde
Total Device Dissipation @ T A
Derate above 2S·C
= 2S·C
PD
1.0
8.0
mWrC
Total Device Dissipation @ TC
Derate above 25·C
= 2S·C
PD
2.S
20
mWrC
-S5to +1S0
·C
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
~()
Watts
ONE WATT
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
SO
·CiW
Thermal Resistance, Junction to Ambient
RruA
125
·CiW
•
1 Emitter
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 2S·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAde, 'E = 0)
V(BR)CEO
MPSW42
MPSW43
300
200
V(BR)CBO
MPSW42
MPSW43
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 160 Vde, 'E = 0)
MPSW42
MPSW43
Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)
(VEB = 4.0 Vde, IC = 0)
MPSW42
MPSW43
300
200
V(BR)EBO
6.0
'CBO
-
lEBO
-
Vde
-
-
Vde
Vde
pAde
0.1
0.1
pAde
0.1
0.1
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAde, VCE
(lC = 10 mAde, VCE
(lC = 30 mAde, VCE
= 10 Vde)
= 10 Vde)
= 10 Vde)
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
hFE
Both Types
Both Types
MPSW42
MPSW43
25
40
40
40
VCE(sat)
VBE(sat)
-
tr
50
MPSW42
MPSW43
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
-
-
Vde
0.5
0.5
0.9
Vde
-
MHz
SMALL-51GNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
Ceb
=
1.0 MHz)
MPSW42
MPSW43
-
(1) Pulse Test: Pulse Width .. 300 p.S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-427
pF
3.0
4.0
MPSW42, MPSW43
FIGURE 1 - D.C. CURRENT GAIN
FIGURE 2 - COLLECTOR SATURATION REGION
200
VCE = 10 V
TJ = 125'C
u;
lL
a
~
z
100
;;'
'"I-
70
B
50
~
--
,...-
---
30
20
1.0
~ OS
!:l
S!
--
..- f-"'
TJ - SoC
'" 0.4
~
-55'C
u
"
~
~ 0.6
"1\
.....
~
0.2
::l
8
i;!
3.0
30
5.0 70 10
20
lC. COllECTOR CURRENT !mA)
50
70
0.1
FIGURE 3 - ON VOLTAGES
0.5
1.0
2.0
5.0
Is. BASE CURRENT (rnA!
2.5
1.2
T1' 215'f
1.0
I I I
I I I
>
~ 0.6
«
I;5 0.4
VaE!,n' @VCE = 10 V
--
~
-
V~E!"~' @'lc),i=116
0.2
o
10
2.0
30
5.0 70 10
20
IC. COLLECTOR CURRENT (rnA)
30
1.5
~
1.0
t
5.0
q:
70
--
~ 20
100
=
Cob
-15 -
~
20
3.0
50 7.0 10
20
IC. COLLECTOR CURRENT !mA)
.,.,..
50
/
-'
,/
50
30
70
WO
~ 30
"-
TJ = 25'C
VCE = 20 V
f = 20 MHz
.\
\
"i'
z
~
-
20
50
100
\
I-
~
=>
'"
u
,t:l 0
2.0
5.0
10
20
VR. REVERSE VOLTAGE (VOLTS)
1\
I
1
I
1.0
l-
1.0
~fNB!forvBE!
-2.0
~
0.5
r-..
I
-550C to 1250C
"
Ccb
0.2
~I'
~
I:! 10
2.0
-55lclOJ::;
g 70
z
d 3.0
r-r -I
RfNCforVCElsat!
-10
e
5 5.0
2~'C I,'mdc Ii
1 L 1/
~ 10 0
w
u
~ 1.0
20 30
FIGURE 6 - CURRENT GAIN - BANDWIDTH PRODUCT
TJ=25'C
30
10
I I
I 1
-05
-25
FIGURE 5 - CAPACITANCE
100
70
50
05 -
Im
1"11
II
50
~
i
_t-
1 L I III j
>
;>
k:l~
la
2.0
VIE!"~) @!lcl'B=lO
0.8
00
1.0
02
"-
FIGURE 4 - TEMPERATURE COEFFICIENTS
1.4
~
.........
-....-.
I
I
o
100
'<'
Ie-lOrnA
I
w
2.0
\-- le- 3OmA
\
\ I = 20 rnA
:;; 0.3
200
1.0
2.0
3.0
5.0 7.0 10
20
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-428
30
50
70
100
MPSW42, MPSW43
FIGURE 7 - ACTIVE REGION SAFE OPERATING AREA
lk
- . ~urrent limit
---- Thermal lImit
- - Second Breakdown limit
500
1 -,..
........
1.0 m~_
..... lOs
0
f+',
~
......... l';: -100!'.
....
f-TA = 25°C
0~TC=~5OC
10
10
....
Duty Cycle';; 10%
-""
~ ~ ~SW42
P--:- MPSW43
20
50
100
200 300
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
I
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-429
•
MPSW45
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
12
Vdc
IC
1.0
Adc
Rating
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25"C
=
25"C
PD
1.0
8.0
Watt
mWrC
Total Davice Dissipation @ TC
Derate above 25"C
=
25"C
PD
2.5
20
Watts
mWrC
TJ, Tstg
-55 to +150
"C
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
~
Emitter 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
50
"CIW
Thermal Resistance, Junction to Ambient
R8JA
125
"CIW
ONE WATT
DARLINGTON TRANSISTOR
NPNSILICON
Refer to 2N6426 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 100 pAdc, VBE = 0)
V(BR)CES
40
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
50
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
12
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vdc
Vdc
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VEB = 10 Vde, Ie = 0)
lEBO
-
100
nAde
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 200 mAde, VCE = 5.0 Vdc)
(lC = 500 mAde, VCE = 5.0 Vdc)
(lC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lC = 1.0 Ade, IB = 2.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 1.0 Adc, IB = 2.0 mAdc)
VBE(sat)
Base-Emitter On Voltage
(lC = 1.0 Ade, VCE = 5.0 Vde)
VBE(on)
25,000
15,000
4,000
-
-
150,000
-
1.5
Vde
2.0
Vdc
2.0
Vdc
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 200 mAdc, VCE = 5.0 Vde, f
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f
= 100 MHz)
= 1.0 MHz)
IT
100
-
MHz
Ccb
-
6.0
pF
(1) Pulse Test: Pulse W,dth", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-430
MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
Value
Unit
MPSW51
MPSW51A
30
40
Collector-Base Voltage
40
50
VEBO
5.0
Vde
IC
1000
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
8.0
Watt
mWf'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
2.5
20
Watts
mWf'C
TJ, Tstg
-55 to + 150
°c
Symbol
Max
Unit
Emitter-Base Voltage
Continuous
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
Vde
VCBO
MPSW51
MPSW51A
Collector Current -
MPSW51, A
Vde
VCEO
Thermal Resistance, Junction to Case
R8JC
50
°CIW
Thermal Resistance, Junction to Ambient
R8JA
125
°CIW
3 Collector
~()
1 Emitter
ONE WATT
HIGH CURRENT TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CEO
MPSW51
MPSW51A
-
0.1
0.1
-
0.1
55
60
50
-
V(BR)CBO
40
50
MPSW51
MPSW51A
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
Collector Cutoff Cu rrent
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vde, IE = 0)
5.0
-
30
40
V(BR)EBO
leBO
MPSW51
MPSW51A
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
Vde
Vde
Vde
pAde
pAde
ON CHARACTERISTICS(1,
-
DC Current Gain
(lC = 10 mAde, VCE = 1.0 Vde)
(IC = 100 mAde, VCE = 1.0 Vde)
(lc = 1000 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc = 1000 mAde, IB = 100 mAde)
VCE(sat)
-
0.7
Vde
Base-Emitter On Voltage
(lC = 1000 mAde, VCE
VBE(on)
-
1.2
Vde
tr
50
-
MHz
-
30
pF
=
1.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
Cobo
1.0 MHz)
(1) Pulse Test: Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-431
•
MPSW51, A
FIGURE 1 - DC CURRENT GAIN
200
-
~ 100
FIGURE 2 - COLLECTOR SATURATION REGION
1.0
-r-.
~
0
a
a:
a:
~
70
'"
50
0.8
~
~
0
>
a:
t;
VCE=I.OV
TJ = 25°C
~
C;
'"
.J;;' 0.2
•
a
10
20
50
100
200
IC. COLLECTOR CURRENT (mAl
500
1000
0.01 0.02
FIGURE 3 - ON VOLTAGES
1.0
TJ = 25°C
g
~ 0.6
"
..
0
"
II~I
'"
IIJ.Il
1'\1..
" \
'HI.
$ -1.6
a:
~
~
:;
IIii
II II
~
f-
eVB for VSE
-2.4
II
-28
20
50 100 200 5001000
Ie. COLLECTOR CURRENT (mAl
102.0
5.0 10
20
50100 200 5001000
IC. COLLECTOR CURRENT (mAl
FIGURE 6 - CAPACITANCE
160
TJ = 25°C
:;
200
v
'"
:E
V
b
~
100
Z
70
z
;Ii
~
VCE(~~~I @ IC liB = 10
"~
u
to
"" 0.2
"...
if;
FIGURE 4 - TEMPERATURE COEFFICIENT
11111 JJ.-H11l
I
"
~
c;-
~
-0.8
11111 I I I I II
VBE(SATI @ ICIIB = 10
0.8
.."
"
0.4
8
20
"
~
o
c;-
TJ = 25°C
"g
if;
n
06
0
~
1 11111
1\
to
to
0-
a;
\
\
in
~
....
""" --........
r-- I-
~
50 r-- r-
~
30
10
a:
~
20
VCE= 10V
TJ = 25°C
f = 20 MHz
40
50
100
200
IC. COLLECTOR CURRENT (mAl
\
'- t---
o
500
1000
Cobo
Cibo
50
10
-r---
10
15
20
3D
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMAll-SIGNAL TRANSISTORS, FETs AND DIODES
2-432
Cibo
-
Cobo
-
20
4.0
25
5.0
MPSW51, A
FIGURE 7 - ACTIVE REGION·SAFE OPERATING AREA
K
50 0
of----
TC = 25:~
TA=25°C ",..t.
Duty Cvcl. ,. 10%
0
01== ~
IT
"I.
mS
1'\
1.0
mS
100
S
'I
" '" '\
~ Current Umit
~ Tharmallimit
0
I0
~ ~ SICjnd r'ikdiin~ij':t MPSW51" ...
I I I II n MPiW51'A
1.0
2.0
10
20 3D 40
5.0
VCE. COllECTOR·EMITTER VOLTAGE IVI
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2-433
•
MPSW55
MPSW56
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Unit
VCEO
60
80
Vde
VCBO
60
80
Vde
VEBO
4.0
Vde
IC
500
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mWf'C
Total Device Dissipation @TC = 25°C
Derate above 25"C
PD
2.5
20
Watts
mWf'C
TJ, Tstg
-55 to +150
°c
Collector Current -
•
Symbol MPSW55 MPSW56
Continuous
Operating and Storage Junction
Temperature Range
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
3 Collector
~()
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
RBJC
50
Unit
0c/w
Thermal Resistance, Junction to Ambient
RBJA
125
°CIW
ONE WATT
AMPLIFIER TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERlmCS
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
MPSW55
MPSW56
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
60
80
V(BR)EBO
Collector Cutoff Current
(VCE = 40 Vde, IB = 0)
(VCE = 60 Vde, IB = 0)
ICEO
MPSW55
MPSW56
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
MPSW56
MPSW56
lEBO
Vde
Vde
!lAde
-
0.5
0.5
-
-
0.1
0.1
-
0.1
100
50
-
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
4.0
-
!lAde
!lAde
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 50 mAde, VCE = 1.0 Vde)
(lC = 250 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 250 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 260 mAde, VCE = 5.0 Vde)
VBE(on)
-
t,Cobo
-
0.5
Vde
1.2
Vde
50
-
MHz
-
15
pF
SMALL-5IGNAL CHARACTERImC5
Current-Gain - Bandwidth Product
(lC = 250 mAde, VCE = 5.0 Vde, f
Output Capacitance
(VCB = 10 Vde, f
=
= 100 MHz)
1.0 MHz)
(1) Pulse Test: Pulse Width
E;
300 p,s, Duty Cycle
E;
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-434
MPSW55, MPSW56
FIGURE 1 - D.C. CURRENT GAIN
400
TJ! 125°C
z
.. 200
....
~
a
--... ,
25°C
to
Vci'1.0V
.......
~ .'\.
-55°C
~
100
~
80
~
~
---"1'11.
_"'101
0
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
IC. COLLECTOR CURRENT (mAl
50
FIGURE 2 - COLLECTOR SATURATION REGION
1.0
TJ'2SoC
~ O.a
~jl~ 25°C
~
~
O.S
IC' 10mA- 50mA
0:
~
~
100 rnA
~
O. 4
~
O. 2
c
'"~
>
i'0
0.05
m~-
0.1
0.2
J"-.....
-I-
0.5
1.0
2.0
5.0
la. BASE CURRENT (mAl
)C~ ;
VeE(onl @
1\
"-
2
I-
VCE{",I @ICII~110
2D
10
0
5.0
50
1.0
2.0
70
<:;
-1.2
-1.6
~
~
-2.0
500
Cibo
--..
50
0VB for VBE
"~
>-
0:
If -2.4
~
....
---
r---
./'
r-..
2.0
5.0
10
20
50
IC. COLLECTOR CURRENT (mAl
Cobo
b"
0
0
~ -2.8
1.0
TJ= 25'C
.......
'f'
0:
0.5
200
100
.§
~
U
+--
5.0
10
20
50
100
IC. COLLECTOR CURRENT {mAl
FIGURE 5 - CAPACITANCE
-o.a
..
nv
4
FIGURE 4 - BASE-EMITTER
TEMPERATURE COEFFICIENT
3;
.....
b-::::: I-
--H:::I±:l:tt1!--l-
S
1\
~
;
SOD
2S0mA
500
11111
11111
VaE(.. ,,@lclla' 10
O.a
w
to
>
300
200
FIGURE 3 - ON VOLTAGES
1. 0
~
100
70
100
200
5. 0
0.1
500
0.2
0.5
1.0
20
5.0
10
VR. REVERSE VOLTAGE {VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-435
20
50
100
•
MPSW55, MPSW56
FIGURE 7 - ACTIVE REGION - SAFE OPERATING AREA
FIGURE 6 - CURRENT GAIN - BANDWIDTH PRODUCT
200
I
"
!!
G
::J
~100
"I;
I I
f- VCE' 2.0 V
TJ' 25'C
70
3:
o
1 2k -
V
!z
lk
/
~
2.00
-
=25 °e
Te
~ 50
to
>'- 30
20
10
20
20
TA
~ 100
o
I
Z
;(
•
1001"
ia 500
~ 50
~
a
.l:'
f.- Duty Cvele .;;; 10%
3.0
5.0
50
20
3D
IC, COLLECTOR CURRENT (rnA)
70
10
70
100
--
1.0
200
-
2.0
=25°e
Current limit
Thermal Lim~
de
_ ~MPSW55
Second Breakdown Limit - f-MPSW56
5.0
10
20
VeE, eOLLECTOR·EMITIER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-436
~ IDs ~.O~s
.... "-
60 80 100
MPSW63
MPSW64
MAXIMUM RATINGS
Symbol
MPSW63
MPSW64
Collector-Emitter Voltage
VCES
30
Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
10
Vde
IC
500
mAde
1.0
B.O
Watt
mWrc
Po
2.5
20
Watts
mWrc
TJ, Tstg
-55 to +150
·C
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
~
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
Po
25'C
Operating and Storage Junction
Temperature Range
Unit
CASE 29-03, STYLE 1
TO-92 (TO-226AEI
Collector 3
"~
Emitter 1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RruC
50
.c/w
Thermal Resistance, Junction to Ambient
RruA
125
.c/w
ELECTRICAL CHARACTERISTICS (TA
ONE WATT
DARLINGTON TRANSISTORS
PNP SILICON
~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
30
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC ~ 100 pAde, VBE ~ 0)
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VEB = 10 Vde, IC ~ 0)
lEBO
-
100
nAde
ON CHARACTERISTlCS(1)
DC Current Gain
(lc = 10 mAde, VCE
(lC
=
100 mAde, VCE
= 5.0 Vde)
= 5.0 Vde)
hFE
MPSW63
MPSW64
5.000
10,000
MPSW63
MPSW64
10,000
20,000
-
-
Collector-Emitter Saturation Voltage
(lC = 100 mAde, IB = 0.1 mAde)
VCE(sat)
-
1.5
Vde
Base-Emitter On Voltage
(lC = 100 mAde, VCE = 5.0 Vde)
VBE(on)
-
2.0
Vde
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lc = 10 mAde, VCE = 5.0 Vde, f = 100 MHz)
(1) Pulse Test: Pulse Width .. 300}JB, Duty Cycle .. 2.0%.
(2)
= Ihfel' ftest·
tr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-437
•
MPSW63, MPSW64
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 - DC CURRENT GAIN
200
TJ'I250C
-I
..
i2 100
10
E 50
z
;;: 30
'">-
..
•
ffi
20
:0
10
<.>
<.>
Q
-- --
25°C
-
1"""- r-
-
"..:"::
:...:::
, .......
, "'
I1.0
r-
10V
~
VCE' 2.0 V
5.0V
~
-55°C
~ S.p
\.
3.0
2.0
0.3
0.5
0.1
1.0
2.0
3.0
5.0
1.0
10
20
30
50
10
100
200
300
IC. COLLECTOR CURRENT (mAl
FIGURE 3 - COLLECTOR SATURATION REGION
FIGURE 2 - "ON" VOLTAGE
Z.0
~ 1.
III
I I TJ = 25°C
IIJBEI~tll@ I~/I~ ,IIH
6
I,...;
V ~~
II
'">
;: 1.2
~
'",,:>
~ 2.0
VBElo.I@VCE • 5.0 V
VCE"atl@ leliB ' 1000
o. s
.u.t+
le/ls' 10?_
r--
O.4
0
0.3
0.5
1.0
2.0 3.0 5.0
10
20 30 50
Ie. COLLECTOR eURRENT ImAI
100
'"~
ZOO 300
1.4
~
1.2
~
1.0
g
.s
!fi
!
lI!
+3.0
+1.0
~
-1.0
~
-2.0
~
-3.0
a::
.1
0.1 0.2
'"'"
t
I
cl
+125o
r,V
~~
"k"v '
1-, ~BII~' BE
-5.0
0.3
0.5
1.0
[\
300 mAl
I'
0.5 1.0 2.0
5.0 10 20
50 100 200 500 I K 2K
5K 10K
FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT
-500C TO +25 0C-
IRI
115 rnA
.. 600
:5
'"g:
~
....-:
~
+250e TO +1250C
2.0 3.0 5.0
10
20 30 50
IC. COLLECTOR CURRENT ImAI
100
ZOO 300
.ll
I II
VeE-20V
200
...
.....::
~
~
Q
~
I
Z
-500 TO +250C
TJ - 250e
400
300
~~
~ 100
'R/NC for VCE!sat)
~ -4.0
100 rnA
lB. BASE CURRENT "'AI
+Hof:,~
+2.0
SOmA
8 0.8
W
:f! 0.6
FIGURE 4 - TEMPERATURE COEFFICIENTS
+5.0 "APPLIES FOR IC/IS" hFE/IOO
+4.0
IC' I OmA
ffi
'"'*
I
1.6
'">
::
r-~
T~ ~ z~JJ
'" 1.8
~
;;:
60
ffi
40
30
<;>
>-
~
~
.t-
4 \
5.0 V
20
0.3 0.5
~
1.0
20 30 50
2.0 3.0 5.0
10
IC. COLLECTOR eURRENT ImAI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-438
10V
100
:I
200 300
MPSW63, MPSW64
FIGURE 8 - CAPACITANCE
FIGURE 7 - ACTIVE REGION. SAFE OPERATING AREA
20
2k
Cobo
..
S
C,bo
"
10
!i1
~..._
i....
::>
3.0
2.0
0.1
1111111
1.0
2.0 3.0 S.O
10
SOO
~
TA = 2SoC
200
I
f
.....
1.5
VR. REVERSE VOLTAGE (VOLTS)
2.0
'"
TC = 2SoC
.....
.....
.....
. . ~t
100
20 30
1.0.,-
.....
....
DUTY CYCLE';; 10%
S.O
10
VCE. COLLECTOR·EMITTER VOLTAGE (V)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-439
~
l'..
.....
iii::j
8
.....
.....
'"
'"
TJ = 2SoC
f= 1.0 MHz
0.2 0.3 O.S
1001"
1.OmS~
c
"-
::!
- - Second Breakdown limit
1k
.§.
70
S.O
- :-.::.: ¥h~r~!N~~!t
"
'"
.... 1'.
20
30
•
MPSW92
MPSW93
MAXIMUM RATINGS
Symbol MPSW92 MPSW93
Unit
VCEO
300
200
Vdc
Collector-Base Voltage
VCBO
300
200
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
1.0
B.O
Watt
mWrc
Po
2.5
20
Watts
mWI'C
TJ, Tstg
-55 to +150
'c
Rating
Collector-Emitter Voltage
Collector Current -
Continuous
Totel Device Dissipation @ TA
Derate above 25'C
= 25'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Operating and Storage Junction
Temperature Range
Po
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
ONE WATT
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
50
'CIW
Thermal Resistance, Junction to Ambient
R8JA
125
'CIW
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF'CHARACTERlSTlCS
Collector-Emitter Breakdown Voltage(l)
(lC = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CEO
MPSW92
MPSW93
V(BR)CBO
MPSW92
MPSW93
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vde, IE = 0)
300
200
300
200
V(BR)EBO
ICBO
MPSW92
MPSW93
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
5.0
-
-
Vdc
Vde
Vde
pAde
0.25
0.25
0.1
pAdc
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vdc)
(lc = 10 mAde, VCE = 10 Vdc)
(lC = 30 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
hFE
Both Types
Both Types
MPSW92
MPSW93
25
40
25
25
VCE(sat)
VBE(sat)
-
tr
50
MPSW92
MPSW93
Base-Emitter Sat~ration Voltage
(lC = 20 mAde, IB = 2.0 mAde)
-
-
1"!T:
Vdc
0.5
0.5
0.9
Vde
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f
=
Ccb
1.0 MHz)
MPSW92
MPSW93
-
(1) Pulse Test: Pulse W,dth", 300 /J13, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL. TRANSISTORS, FETs AND DIODES
2-440
pF
6.0
B.O
MPSW92, MPSW93
FIGURE 1 - D.C. CURRENT GAIN
200
VCE" 10V
TJ!
12~OC
2loc
~100
'"....
~
70
FIGURE 2 - COLLECTOR SATURATION REGION
-
I
in
!:;
0
0.6
~
0.5
...
~
l"--i"I
!:;
1\
\
0
>
-550 C
'"~
~
0.4
a:
I-IC= 10 rnA
0.2 I-IC='20 ~A
::IE
...,.
0.3
'"
c 50
0
...~
~
0
...
30
20 1.0
2.0
50
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT ImA)
70
o
100
0.1
FIGURE 3 - ON VOLTAGES
14
I I I
1.2
TJ =,250 C
r-- -
~
0.8
~
0.6 r--
-
I- VaElon) @VCE = 10 V
~
-
a
1.0
2.0
30
1.5
I
/
0.5
I!!
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT ImA)
~-1.5 -
-2.0
50
-2.5
70 100
FIGURE 5 - CAPACITANCE
30
~ 20
-
S
2.0
I
I
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT ImAI
~
....
TJ=250 C=
!5
7a
e
g
~ 50
....
e
~
70
,
Ccb
5" 5.0
V
3:
e
10
50
70
100
3
0/
/'
/'
-
TJ = 250 C
VCE=20V
f = 20 MHz
z
~ 2a
....
u· 3.0
I
2.0
1.0
1.0
J.....+-t-
FIGURE 8 - CURRENT GAIN - BANDWIDTH PRODUCT
I"-
w
'"z:
L
RlJVaforVBE
~10a
Cob
0
I
-sJoc to 1250C
5.0
VCE(s.,) @ IcII8 - 5.0
IV
125 C ';
-550C to 250C
-0.5
-I-"
100
70
50
20!30
L4
RevC for VCEIsa1l
ffi~ -1.0
--
•
"-
I
25°C to
~ 1.0
i
VCElsat)@lc/ia = 10
1.0
2.0
5.0
10
'110 BASE CURRENT (mA)
IC = 10
la
20
i
I I II I
0.2
0.5
-
"
FIGURE 4 - TEMPERATURE COEFFICIENTS
_ VaEI"t)@ Ic/la - 10
> 04
'";>'
0.2
r-
Ic=30mA
2.5
I I I
I I I
1.0
~
,
r-.....
\
,...-
I I
I I
I I
0.1
~
~
TJ = 25°C-
0.2
0.5
1.0
2.0
5.0
10
20
VR. REVERSE VOLTAGE IVOLTS)
50
100
.i
200
10
1.0
2.0
3.0
5.0 7.0 10
20
30
IC. COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-441
50 70
100
MPSW92, MPSW93
FIGURE 7 - ACTIVE REGION SAFE OPERATING AREA
- - - - - Thermal
1 5001km~~
ISecond Braakdown Umil
-
Cunlnt Umil
Lim~
~200~d-~-+'~~++~_'\~1~00TP~'~~~HHHH
lli
aloo~~~~~~~~l~'O~';~~~~~§I~~~~il~
..
!3
:i
1.Oms
50
B
•
~ 20 I-1-::;t~TA~==2~5o~C:t'~TC~=~2~5~oC~~':j~*I-~MPSW82
MrS~T3,-
101L_Outy...:....,.CycI:.-."-,-lO~"....L...L.I.L..L.NIi_-J.-,.L,.,...'-.L......I'~'~IL...U
O
20
50
100
200 300
VCE. COLLECTOR-EMmER VOLTAGE IVOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-442
PBF259,S
CASE 29-04, STYLE 1
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
PBF259,S
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Collector-Base Voltage
VCBO
300
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5.0
Watt
mW/oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
- 55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
~~~
"
23
1 Emitter
HIGH VOLTAGE TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to MPSA42 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage (I)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
300
Collector-Base Breakdown Voltage
(lc = 10 ,.Ade, IE = 0)
V(BR)CBO
300
Emitter-Base Breakdown Voltage
(IE = 100 ,.Ade, IC = 0)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VeB = 250 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 V)
lEBO
Collector Cutoff Current
(VCE = 10V)
ICEO
-
-
Vde
Vde
Vde
50
nAde
20
nAde
50
nAde
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 20 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
hFE
PBF259S
All Types
All Types
60
25
25
Collector-Emitter Saturation Voltage
(lC = 30 mAde, IB = 1.5 mAde)
(lC = 30 mAde, IB = 60 mAde)
VCE(sat)
-
-
-
Vde
-
0.5
1.0
40
-
MHz
-
3.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f
Output Capacitance
(VCB = 20 Vde, IE = 0, f
=
=
for
20 MHz)
Cobo
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-443
•
PBF259R, RS
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
MAXIMUM RATINGS
Symbol
Rating
Unit
Collector-Emitter V"lt~ge
VCEO
3QO
Vdc
Collector-Base Voltage
VCBO
300
Vdc
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Collector Current - Continuous
•
PBF493R,RS
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
625
5.0
mW
mW/oC
Total Device Dissipation @ TC
Derate above 25°C
= 26°C
PD
1.5
12
Watt
mW/oC
TJ, Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
1 Collector
~.~
3 Emitter
THERMAL CHARACTERISTICS
HIGH VOLTAGE TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to MPSA92 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA =
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage (1)
(lC = 3.0 mAde, IB = 0)
V(BR)CEO
300
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
300
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vdc
5.0
-
Vdc
Vde
Collector Cutoff Current
(VCB = 250 Vde, IE = 0)
ICBO
-
50
nAde
Emitter Cutoff Current
(VEB = 3.0 V)
lEBO
-
20
nAde
Collector Cutoff Current
(VCE = 10 V)
ICEO
-
50
nAde
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 20 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lc = 30 mAde, VCE = 10 Vde)
-
hFE
PBF259RS
All Types
All Types
60
25
25
-
-
0.5
1.0
Collector-Emitter Saturation Voltage
(lC = 30 mAde, IB = 1.5 mAde)
(lC = 30 mAde, IB = 60 mAde)
VCElsat)
Base-Emitter Saturation Voltage
(lC = 20 rnA, IB = 2.0 rnA)
VBE(sat)
-
fy
Cobo
-
Vde
0.9
V
40
-
MHz
-
3.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 10 mAde, VCE = 10 Vde, f
Output Capacitance
(VCB = 20 Vde, IE
= 0, f =
= 20 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-444
PBF493,S
CASE 29·04, STYLE 1
TO·92 (TO·226AA)
MAXIMUM RATINGS
Rating
Symbol
PBF493,S
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Collector-Base Voltage
VCBO
300
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current - Continuous
Total Device Dissipation @ T A
Derate above 25°C
= 25°C
"PO
625
5.0
mW
mWjOC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
1.5
12
Watt
mW/oC
TJ, Tstg
-66 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
HIGH VOLTAGE TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
PNP SILICON
Thermal Resistance, Junction to Ambient
Refer to MPSA92 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage (1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
300
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
300
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
5.0
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 V)
lEBO
Collector Cutoff Current
(VCE = 10 V)
ICEO
-
-
Vde
Vde
Vde
0.25
pAde
20
nAde
250
nAde
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 0.1 mAde, VCE = 1.0 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
-
hFE
40
40
25
-
VCE(sat)
-
0.5
VBE(sat)
-
0.9
Vde
50
-
MHz
-
6.0
pF
PBF493S
All Types
All Types
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
Vde
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f
Output Capacitance
(VCB = 20 Vde, IE
= 0, f =
fr
= 20 MHz)
Cobo
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-445
..
PBF493R, RS
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
PBF259R,RS
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Collector-Base Voltage
VCBO
300
Vdc
Emitter-Base Voltage
VEBO
IC
5_0
Vdc
500
mAde
Collector Current - Continuous
•
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
625
5.0
mW
mW/oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
12
Watt
mW/oC
TJ. Tstg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
I
Characteristic
I Thermal Resistance, Junction to Case
I Thermal Resistance, Junction to Ambient
,/ ~"~'-'
2
3 Emitter
3
Symbol
I
Max
Unit
HIGH VOLTAGE TRANSISTORS
ROJC
I
83.3
°C/W
PNPSILICON
RIIJC
I
200
°C/W
Refer to MPSA42 for graphs.
I
ELECTRICAL CHARACTERISTICS
(TA
= 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (1)
(lC = 1.0 mAde,lB = 0)
V(BR)CEO
300
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 "Ade, IE = 0)
V(BR)CBO
300
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 "Ade, IC = 0)
V(BR)EBO
5.0
-
Vde
Characteristic
OFF CHARACTERISnCS
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 V)
lEBO
-
Collector Cutoff Cu rrent
(VCE = 10 V)
ICEO
0.25
"Ade
20
nAde
-
250
nAde
40
40
25
-
VCE(sat)
-
0.5
VBE(sat)
-
0.9
Vde
IT
50
-
MHz
Cobo
-
6.0
pF
ON CHARACTERISTICS (11
DC Current Gain
(lC = 0.1 mAde, VCE = 1.0 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
hFE
PBF493RS
All Types
All Types
Collector-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
-
Vde
Base-Emitter Saturation Voltage
(lC = 20 mAde, IB = 2.0 mAde)
SMALL-SIGNAL CHARACTERISncS
Current-Gain Bandwidth Product
(lC = 10 mAde, VCE = 20 Vdc, f
Output Capacitance
(VCB = 20 Vdc, IE
= 0, f =
= 20 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-446
P2N2222,A
MAXIMUM RATINGS
Rating
Symbol
P2N
2222
~222A
P2N
Unit
Collector-Emitter Voltage
VCEO
30
40
Vdc
Collector- Base Voltage
VCBO
60
75
Vdc
Emitter-Base Voltage
VEBO
5.0
6.0
Total Device DISSipation
600
mAde
TA-25°C
Po
625
5.0
mW
mW;oC
TC = 25°C
Po
1.5
12
Watts
mW;oC
TJ,Tstg
-55 to +150
°C
Derate above 25°C
Total Device DISSipation
Derate above 25°C
Operating and Storage Junction
Temperature Range
1 Collector
Vdc
IC
Collector Current - Contmuous
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
.:_-@
3 Emitter
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTORS
Characteristic
Thermal Resistance. Junction to Case
NPN SILICON
Thermal Resistance, Junction to Ambient
Refer to MPS2222 for graphs.
I
ELECTRICAL CHARACTERISTICS
(TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
30
40
-
Unit
OFF CHARACTERISnCS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 !LAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
Collector Cutoff Current
(VCE = 60 Vde, VEB(off)
= 3.0 Vde)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA
(VCB = 60 Vde, IE = 0, TA
V(BR)CEO
P2N2222
P2N2222A
60
75
V(BR)EBO
P2N2222
P2N2222A
ICEX
lS0·C)
lS0·C)
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
P2N2222
P2N2222A
P2N2222
P2N2222A
-
5.0
6.0
-
-
10
-
0.Q1
0.01
10
10
Vde
-
nAde
!LAde
lEBO
-
ICED
IBEX
10
nAde
-
10
nAde
-
20
nAde
P2N2222A
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vde, VEB(off)
-
P2N2222A
ICBO
=
=
Vde
V(BR)CBO
P2N2222
P2N2222A
Vde
= 3.0 Vde)
P2N2222A
ON CHARACTERISTICS'
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lc = 10 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde, TA = -55·C)
(lC = 150 mAde, VCE = 10 Vde) (1)
(lC = 150 mAde, VCE = 1.0 Vde) (1)
(lC = 500 mAde, VCE = 10 Vde) (1)
Collector-Emitter Saturation Voltage (1)
(lC = 150 mAde, IB = 15 mAde)
(lC
= 500 mAde, IB =
50 mAde)
hFE
35
50
75
35
100
50
30
40
P2N2222A only
P2N2222
P2N2222A
VCE(sat)
P2N2222
P2N2222A
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2·447
-
300
-
-
Vde
-
-
P2N2222
P2N2222A
-
0.4
0.3
1.6
1.0
•
P2N2222,A
ELECTRICAL CHARACTERISTICS (continued) (T A = 25°C unless otherwise noted.)
Characteristic
Symbol
Base-Emitter Saturation Voltage (1)
(IC = 160 mAde, IB = 15 mAde)
VBE(sat)
P2N2222
P2N2222A
(lC = 500 mAde, IB = 50 mAde)
Min
0.6
-
P2N2222
P2N2222A
-
Max
Unit
Vdc
1.3
1.2
2.6
2.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (2)
(lC = 20 mAde, VCE = 20 Vdc, I = 100 MHz)
•
MHz
IT
250
300
P2N2222
P2N2222A
Output Capacitance
(VCB = 10 Vde, IE = 0, I = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vde, IC = 0, I = 1.0 MHz)
Cibo
P2N2222
P2N2222A
Input Impedance
(lc = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
(IC =10 mAde, VCE = 10 Vdc, I = 1.0 kHz)
P2N2222A
P2N2222A
Voltage Feedback Ratio
(IC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
(IC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
P2N2222A
P2N2222A
Small-Signal Current Gain
(IC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
(IC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
P2N2222A
P2N2222A
Output Admittance
(lc = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
(IC = 10 mAde, VCE = 10 Vdc, I = 1.0 kHz)
P2N2222A
P2N2222A
Collector Base Time Constant
(IE = 20 mAde, VCB = 20 Vde, I = 31.8 MHz)
P2N2222A
Noise Figure (lC - 100 jlAde,
VCE = 10 Vde, RS = 1.0 kQ, f = 1.0 kHz)
P2.N222.2A
pF
-
8.0
-
30
25
pF
kQ
hie
2.0
0.25
8.0
1.25
Xl0-<+
h re
-
8.0
4.0
50
75
300
375
5.0
25
35
200
-
150
-
hie
jlmhos
hoe
rb'C e
ps
dB
NF
4.0
SWITCHING CHARACTERISTICS MPS2222A only
Delay Time
td
(VCC = 30 Vde, VBE(off) = 0.5 Vde,
IC = 150 mAde, IB 1 = 15 mAde) (Figure 1)
Rise Time
Storage Time
(VCC = 30 Vde, IC = 150 mAde,
IB 1 = 182 = 15 mAde) (Figure 2)
Fall Time
(1) Pulse Test: Pulse Width;;; 300 Jls, Duty Cycle;;; 2.0%.
(2) fT
IS
-
tr
10
ns
25
ns
225
ns
60
ns
tf
defined as the frequency at which Ihfel extrapolates to unity.
ts
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 1 - TURN-ON TIME
-I I- 1,0 lO 100,,0, DUTY
+:~. CYCLE" 2".
-2V
-I
1 kfi
< 2 no
FIGURE 2 - TURN-OFF TIME
+30 V
~
+30 V
"'"I F~'~;''"~':
200
,
I
.L.
·T-
0
_.1._
-T"
:CS·<10pF
-14V
___ J
-
Scope RI .. Time
<4
n.
L
r<
n.
20
1 k
:CS·<10pF
-Totel ,hunt up.cit.nce of ta.t Jig.
connKtor •. and o.clllo.cop•.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
2·448
___ J
1N914
-4V
P2N2907,A
MAXIMUM RATINGS
Rating
Symbol
P2N kr2N
2907 907A
J
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAde
Collector Current - Continuous
40
60
Vdc
Vdc
Total Device Dissipation
Derate above 25°C
TA
= 25°C
Po
625
5.0
mW
mW/"C
Total Device Dissipation
Derate above 25°C
TC - 25°C
Po
1.5
12
Watts
mW/oC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
THERMAL CHARACTERISTICS
CASE 29-04, STYLE 17
TO-92 (TO-226AA)
Unit
, Collector
.:_{Q
3 Emitter
°c
AMPLIFIER TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
PNPSILICON
Thermal Resistance, Junction to Ambient
Refer to MPS2907 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
40
60
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
P2N2907
P2N2907A
Vde
Collector-Base Breakdown Voltage
(lC = 10 /LAde, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10/LAdc, IC = 0)
V(BR)EBO
5.0
-
Vde
-
50
nAde
-
0.02
0.01
Collector Cutoff Current
(VCE = 30 Vde, VEBloff)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB
= 50 Vde,
IE
ICEX
= 0.5 Vde)
ICBO
P2N2907
P2N2907A
= 0, TA =
150'C)
-
P2N2907
P2N2907A
ILAde
-
20
10
Emitter Cutoff Current
(VEB = 3.0 Vde)
lEBO
-
10
nAde
Collector Cutoff Current
(VCE = 10 V)
ICEO
-
10
nAde
IBEX
-
50
nAde
Base Cutoff Current
(VCE = 30 Vde, VEB(off)
= 0.5 Vde)
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE
hFE
(lC
=
1.0 mAde, VCE
=
10 Vde)
P2N2907
P2N2907A
50
100
-
(lc
=
10 mAde, VCE
=
10 Vde)
P2N2907
P2N2907A
75
100
-
(lC
=
=
10 Vde) (1)
P2N2907, P2N2907A
100
300
500 mAde, VCE
10 Vde) (1)
P2N2907
P2N2907A
30
50
-
-
0.4
1.6
-
1.3
2.6
(lC
150 mAde, VCE
=
10 Vde)
P2N2907
P2N2907A
35
75
=
=
Collector-Emitter Saturation Voltage (1)
(lc = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage (1)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
Vde
Vde
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-449
-
•
P2N2907,A
ELECTRICAL CHARACTERISTICS (continued) ITA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
200
-
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (1), (2)
(lc = 50 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f
Input Capacitance
(VBE = 2.0 Vdc, IC
fT
Cobo
= 1.0 MHz)
Cibo
= 0, f = 1.0 MHz)
MHz
pF
-
B.O
-
30
-
50
ns
10
ns
40
ns
110
ns
BO
ns
30
ns
pF
SWITCHING CHARACTERISTICS
Turn-On Time
•
ton
(VCC = 30 Vdc, IC = 150 mAde,
IBI = 15 mAde) (Figures 1 and 5)
Delay Time
Rise Rime
Turn-Off Time
td
tr
toff
(VCC = 6.0 Vde, IC = 150 mAde,
Ie 1 = le2 = 15 mAde) (Figure 2)
Storage Time
Fall Time
ts
tf
FIGURE 2 - STORAGE AND FALL
TIME TEST CIRCUIT
FIGURE 1 - DELAY AND RISE
TIME TEST CIRCUIT
INPUT
Zo-50n
PRF - 150 PPS
RISE TIME .. 2.0 nl
P.W. <2oon.
-30V
INPUT
Zo-50n
PRF - 150 PPS
RISE TIME c 2.0 ns
P.W. < 200 nl
200
n.
TO OSCILL.OSCOPE
'USE TIME < 1.0
.".
::u-koon.l-
.'5 V
37
I.Ok
n.
I.Ok
TO OSCILLOSCOPE
.. ISE TIME < 1.0
110
.".
.".
MOTOROLA SMAll-SIGNAL TRANSISTORS, FETs AND DIODES
2-450
.....0 V
.".
P2N3019
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
80
Vdc
Collector-Base Voltage
VCBO
120
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current - Continuous
IC
1.0
Adc
Total Device Dissipation
Derate above 25°C
TA = 25°C
PD
1.0
8.0
Watts
mW/oC
Total Device Dissipation
Derate above 25°C
TC = 25°C
PD
2.5
20
Watts
mW/oC
TJ, T stg
-55 to +150
°c
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Characteristic
I
Max
Unit
Thermal Resistance, Junction to Case
RijJC
50
°C/W
Thermal Resistance, Junction to Ambient
RijJA
125
°C/W
3 Collector
":~
1 Emitter
ONE WAlT
AMPLIFIER TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage (1)
(lC = 30 mAde, IB = 0)
V(BR)CEO
80
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 pAde, IE = 0)
V(BR)CBO
120
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 "Ade, IC = 0)
V(BR)EBO
7.0
-
Vde
-
0.01
10
-
0.01
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 90 Vdc, IE = 0)
(VCB = 90 Vdc, IE = 0, TA
ICBO
= + 150"C)
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
lEBO
pAde
pAde
ON CHARACTERISTICS
DC Current Gain (1)
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 150 mAdc, VCE = 10 Vdc)
(lc = 150 mAde, VCE = 10 Vde, TC
(lC = 500 mAde, VCE = 10 Vde)
(lC = 1.0 Ade, VCE = 10 Vde)
hFE
=
-55"C)
P2N3019
P2N3019
P2N3019
P2N3019
P2N3019
50
90
100
40
50
15
Collector-Emitter Saturation Voltage
(lC = 150 mAde,lB = 15 mAdc)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation "voltage
(lC = 150 mAde, IB = 15 mAdc)
VBE(sat)
-
SMALL·SIGNAL CHARACTERISTICS
Current·Gain Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, f
=
20 MHzl
P2N3019
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-451
-
-
300
-
Vde
0,2
0.5
1.1
Vde
•
P2N3019
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
Charac:teristic
Output Capacitance
(VCB ~ 10 Vdc, IE
~
0, f
~
Min
Max
Unit
Cobo
-
12
pF
Cibo
-
60
pF
1.0 MHz)
Input Capacitance
(VBE ~ 0.5 Vdc, IC ~ 0, f ~ 1.0 MHz)
Small-Signal Current Gain
(lC ~ 1.0 mAde, VCE ~ 5.0 Vdc, f
•
Symbol
~
1.0 kHz)
P2N3019
Collector Base Time Constant
(IE ~ 10 mAde, VCB ~ 10 Vdc, f ~ 4.0 MHz)
P2N3019
Noise Figure
(lc ~ 100 !LAde, VCE ~ 10 Vdc, RS ~ 1.0 kohms, f ~ 1.0 kHz)
hfe
80
400
-
rb'C c
-
400
ps
NF
-
4.0
dB
(1) Pulse Test: Pulse Width", 300 ,"s. Duty Cycle'" 1.0%.
DC CURRENT GAIN
P2N3019
CURRENT GAIN - BANDWIDTH PRODUCT
!
I
280·
r
I
TJ= 1III"C
III 1111
1000•
•
.,to
40
10"•
J::::: TJ=21DC
.1r-- t = -HOC
j
1.11.8
10
100
Ie. COWCTOR CURRENT (rnA)
1000
1.8
Ie. COURT1IIIIIUIIIIlIIT ,'U.D.t.1
CAPACITANCE
"ON" VOLTAGES
1.4
I. 2
c:.,
I::
0
1'--
r--.
1
YlElIIIl :
0.1
I
0.1
'" 0.4
0.1
D. I
I.
10
o
II
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-452
~
=10
_""_VeE-l.0V
I II"t""·'0
¥til.
IJ.J.WIr'"
IllIG
P2N3019
TEMPERATURE COEFFICIENTS
p-
i
Ii
~
I +ZS°'; '10 +1kI°C
1.I
I 1111111 I I
1-5So~' Vo ZsoCI
o. I
~FORYa(UlI
::.
B
!
0
0
!!E -0.8
-55°C TO +2~!~
As =4.3 ~l
IC = 10 ""
fN88 FOR YaE
1-"'"
+Z5°C TO +150·C
11111111 I
~
II
~-1.8
Re=1.0~
IC = IOOI'A
II 11111111 I
0.5 1.0
10.0
50 100
Ie. COllECTOR CURRENT ImAI
500 1000
0.1
I.
1.0
10
I. FREIIUPIC\' _I
CURRENT GAIN BANDWIDTH PftODUCT_
COLLECTOR CURRENT - 1 .........
SOURCE RESISTANCE EFFECTS
P2N3019
Jl;.rJ!
lOY
14.0
Vcp
TA = 25°C
12.0
'"
100
t-- fF'2N30
0
S 10.0
:a
I '.0
I
Ie= 100 ""
8.0
II
!Ii 4.0
z.o
o
0.1
111:Uffl0
r
11111111
1.0
10.0
100.0
1000.0
lis. SOURCE RESISTANCE It OHMSI
o
0.1
1.0
Ie COllECTOR CIIRRBIf ,. . *1
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-453
11
•
P2N4033
CASE 29-03, STYLE 1
TO-92 (TO-226AE)
MAXIMUM RATINGS
Rating
•
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
80
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current - Continuous
IC
1.0
Adc
Total Device Dissipation @ T A = 25°C
Derate above 25°C
Po
1.0
8.0
W
mW(OC
Total Device Dissipation @TC
Derate above 2f;°C
Po
2.5
20
W
mW(OC
TJ, Tstg
-55 to +150
°c
=
25°C
Operating and Storage Junction
Temperature Range
3 CoUector
~~
1 Emitter
ONE WATT
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
Symbol
ReJC
50
°C(W
Thermal Resistance, Junction to Ambient
ReJC
125
°C(W
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 rnA)
V(BR)CEO
80
Collector-Base Breakdown Voltage
(lC = 101'A)
V(BR)CBO
80
Emitter-Base Breakdown Voltage
(IE = 10 #£A)
V(BR)EBO
5.0
-
-
5.0
50
-
#£A
10
nA
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 60 V)
(VCB = 60 V, TA = lSO'C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 V)
lEBO
V
V
V
nA
ON CHARACTERISTICS
DC Current Gain
(lC = 100 rnA, VCE = 5.0 V, -55'C)
(lc = 100 #£A, VCE = 5.0 V)
(lc = 100 rnA. VCE = 5.0 V)
(lc = 500 rnA, VCE = 5.0 V)
(lc = 1.0 A. VCE = 5.0 V)
hFE
P2N4033
P2N4033
P2N4033
P2N4033
P2N4033
40
75
100
70
25
Collector-Emitter Saturation Voltage
(lc = 150 rnA, IB = 15 rnA)
(Ie = SOO rnA. IB = 50 rnA)
VCE(sat)
Base-Emitter Saturation Voltage
(Ie = lSO rnA, IB = 15 rnA)
(Ie = 500 rnA, IB = SO rnA)
VBE(sat)
-
-
300
-
V
-
0.15
0.5
-
0.9
1.1
-
V
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
2-454
-
P2N4033
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
I
Characteristic
Symbol
Min
Max
Unit
25
pF
150
pF
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCE= 10V.I= 1.0MHz)
Cabo
-
Input Capacitance
(VEB = 0.5 V. 1= 1.0 MHz)
Clbo
--
IT
150
ton
--
lOa
ns
toft
-
400
ns
Current Gain -- Bandwidth Product
(lc = 50 mAo VCC = 10 V. I = 100 MHz)
MHz
SWITCHING CHARACTERISTICS
Turn-On Time (see Figure 1)
(IC = 500 mAo IBI = 50 mAl
Turn-Oft Time (see Figure 1)
(IC = 500 mAo IBI = IB2 = 50 rnA)
(1) Pulse Width = 300 f.ls. Duty Cycle 1.0%.
Vee- 50V
VBB+5V
C
i 10011
100.0
11V
.Jl...
100.0
t""
...
10~s
5011
ose ILLOSCOPE
V
.....
FIGURE 1: SWITCHING TIMES TEST CIRCUIT
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-455
•
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2-456
3
3
l
2
3
1
CASE 20-03
(TO-206AF)
TO-72
CASE 22-03
(TO-206AA)
TO-18
ASE 26-03
(TO-206AB)
TO-46
CASE 27-02
(TO-206AC)
TO-52
iii",,,...~
(I[
2
1
(TO-205AO)
TO-39
Metal-Can
Transistors
CASE 607-04
~CASE 610A-04
-
CASE 632-08
(TO-116)
CASE 646-06
(TO-116)
Motorola's metal-can transistor product offering includes:
general purpose, switching, high voltage, choppers, Darlingtons, low noise amplifiers and RF amplifiers.
A variety of package options are available.
Many devices contained in this section are also available with
high reliability MIL-S-19500 processing. JAN, JANTX, JANTXV,
and JANS qualified devices are so noted on the following data
sheets.
This section contains both single and multiple metal-can
transistors.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-1
•
2N657
CASE 79-04, STYLE 1
TO-39 (TO-205ADI
.:~-
MAXIMUM RAnNGS
Symbol
Value
Unit
Collector-Emitter Voltage
RatIng
VCEO
100
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
8.0
Vdc
IC
0.5
Adc
Po
1.0
5.7
mWrC
4.0
22.8
mWrC
-65 to +200
°C
Collector Current -
•
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
25°C
Operating and Storage Junction
Temperature Range
Po
TJ, Tstg
"
2
Watt
1
1 Emitter
GENERAL PURPOSE
TRANSISTOR
Watts
NPN SILICON
Refer to 2N3498 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 250 !lAde, IB = 0)
V(BR)CEO
100
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
100
Emitter-Base Breakdown Voltage
(IE = 250 !lAde, IC = 0)
V(BR)EBO
8.0
-
ICBO
-
10
!,-Ade
hFE
30
90
-
VCE(sat)
-
4.0
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
.
-
Vdc
Vdc
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 200 mAde, VCE
=
10 Vde)
Collector-Emitter Saturation Voltage(1)
(lc = 200 mAde, IB = 40 mAde)
SMALL-SIGNAL CHARACTERISTICS
Input Impedanee(1)
(lB = 8.0 mAde, VCE = 10 Vdc)
(1) Pulse Test: Pulse Length = 300 !,-S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-2
2N697
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
,'~~~
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCER
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
PD
0.6
4.0
Watt
mWI"C
Total Device Dissipation @ TC = 25·C
Derate above 25·C
PD
2.0
13.3
Watts
mWI"C
TJ, Tstg
-65 to +200
·C
Operating and Storage Junction
Temperature Range
2
1
1 Emitter
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
Refer to 2N2218 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25·C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC = 100 mAde, RBE = 10 ohms)
V(BR)CER
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 01
V(BR)EBO
5.0
-
Vde
-
1.0
100
40
120
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
ICBO
=
150·C)
!lAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 150 mAde, VCE
=
hFE
-
10 Vde)
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
1.5
Vde
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
1.3
Vde
Cobo
-
35
pF
hfe
2.5
-
MHz
SMALL-5IGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IE
= 0)
Small-Signal Current Gain
(lC = 50 mAde, VCE = 10 Vde, f
= 20 MHz)
(1) Pulse Test: Pulse Length .. 12 ms, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-3
•
2N699
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCER
80
Vde
Collector-Base Voltage
VCBO
120
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
25"C
Po
0.6
4.0
Watt
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
2.0
13.3
Watts
mWrC
TJ, Tstg
-65 to +200
"C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
75
"CIW
Thermal Resistance, Junction to Ambient
R8JA
250
"CIW
Total Device Dissipation @ TA
Derate above 25"C
=
Operating and Storage Temperature
Temperature Range
GENERAL PURPOSE TRANSISTOR
THERMAL CHARACTERISTICS
•
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Characteristic
NPN SILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)CER
80
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 100 mAde, RBE ~ 10 ohms)
Collector Cutoff Cu rrent
(Vce = 60 Vde, IE = 0)
(Vce = 60 Vde, IE = 0, TA
ICBO
=
2.0
200
lEBO
100
pAde
hFE
40
120
-
150"C)
Emitter Cutoff Current
(VEB = 2.0 Vde, IC = 0)
pAde
-
ON CHARACTERISTICS
DC Current Gain (1)
(lC = 150 mAde, VCE
=
10 Vde)
Collector-Emitter Saturation Voltage (1)
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.5
Vde
Base-Emitter Saturation Voltage (1)
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
1.3
Vde
fr
50
-
MHz
Cobo
-
20
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
Input Impedance
(lc = 1.0 mAde, VCB
(lc = 5.0 mAde, VCB
Voltage Feedback Ratio
(lC = 1.0 mAde, Vce
(lC = 5.0 mAde, VCB
=
=
5.0 Vdc, f
10 Vde, f
= 1.0 kHz)
= 1.0 khZ)
Small Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vde, f
(lC = 5.0 mAde, VCE = 10 Vde, f
= 1.0 kHz)
= 1.0 kHz)
=
=
Ohms
hib
= 1.0 kHz)
= 1.0 kHz)
5.0 Vdc, f
10 Vde, f
Output Admittance
(lC = 1.0 mAde, VCB
(lC = 5.0 mAde, VCB
=
=
100 kHz)
20
hrb
-
30
10
X 10-4
2.5
3.0
hfe
35
45
100
0.05
0.5
1.0
/Iomhos
hob
5.0 Vde, f = 1.0 kHz)
10 Vde, f = 1.0 kHz)
-
(1) Pulse Test: Pulse Width"" 300 /los, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-4
-
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
2N706A,B
Collector-Emitter Voltage(1)
Collector-Base Voltage
Emitter-Base Voltage
2N706
2N706A
2N7068
Collector Current
2N706.A,B
Symbol
Value
VCEO
15
Unit
Vdc
VCER
20
Volts
VCBO
25
Volts
VEBO
3,0
5,0
5,0
Volts
IC
50
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0,3
2,0
Watt
mWfOC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.0
6.67
Watts
mWfOC
Total Device Dissipation @ TC = 100°C
Derate above 100°C
Po
0.5
Watt
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R(lJC
150
°CIW
Thermal Resistance, Junction to Ambient
2N706A,B
R8JA
500
°CIW
Operating and Storage Junction
Temperature Range
2N706,A, B
(2N706 JAN AVAILABLE)
CASE 22-03. STYLE 1
TO-18 (TO-206AA)
3 Collector
"~,~
1 Emitter
SWITCHING TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA
=
NPN SILICON
Refer to 2N2368 lor graphs,
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Vo/tage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
15
-
Vdc
Collector-Emitter Breakdown Voltage(2)
(R = 10 ohms, IC = 10 mAde)
V(BR)CER
20
-
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150°C)
(VCB = 25 Vdc, IE = 0)
ICBO
2N706A, 2N706B
0.5
30
10
Collector Cutoff Current
(VCE = 20 Vdc, RBE = 100k)
-
2N706A, 2N706B
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
(VEB = 5.0 Vde, IC = 0)
2N706
2N706A,2N706B
-
10
10
20
20
-
-
0.6
0.4
0.7
0.9
0.9
200
-
-
-
5.0
6.0
2.0
2.0
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
ICER
lEBO
!LAde
10
!LAde
!LAde
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 10 mAde, VCE = 1.0 Vde)
hFE
2N706
2N706A, 2N706B
Collector-Emitter Saturation Voltage(2)
(lc = 10 mAde, IB = 1.0 mAde)
Base-Emitter Saturation Voltage(2)
(lc = 10 mAde, IB = 1.0 mAde)
VCE(sat)
2N706, 2N706A
2N706B
-
VBE(sat)
2N706
2N706A, 2N706B
-
60
Vdc
Vde
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(VCE = 15 Vde, IE = 10 mAde, 1= 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE = 0)
(VCB = 10 Vde, IE = 0)
Cobo
2N706A, 2N706B
2N706
Magnitude 01 Forward Current Transler Ratio, Common-Emitter
2N706
(VCE = 15 Vde, IE = 10 mAde, I = 100 Mhz)
2N706A,B
(VCE = 10 Vde, IE = 10 mAde, I = 100 MHz)
3-5
pF
Ihlel
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
MHz
-
..
2N706, A, B
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Collector Base Ti me Constant
(VCE = 15 Vdc, IE = 10 mAde, f
2N706B
= 1.0 mAl
Turn-Off Time
(lBl = 3.0 mA, IB2
= 1.0 mAl
Max
Unit
ohms
rb
= 300 MHz)
Storage Time
Turn-On Time
(IBI = 3.0 mA. IB2
Min
Charge Storage Time Constant(2)
2N706
2N706A,B
-
50
ts
-
25
ns
ton
-
40
ns
toff
-
75
ns
's
-
ns
60
25
(1) Refers to collector breakdown voltage on the high current region when Rbe = 10 n
(2) Pulse Test: Pulse Width", 12 /Ls, Duty Cycle'" 2.0%.
(3) Switching Times Measured with Tektronix Type R Plug-In (50 n Internal Impedance) .
•
STORAGE TIME TEST CIRCUIT
SWITCHING TIME TEST CIRCUIT
Type R Sampling
Type R Sampling ReSIstor "'--""'r""IN'v-O
20n
Vee == 3Vdc
(ad,ust for lOrnA)
270n
Pulse Volts
20n
Reslstor~
Vee;
n
Internal Resistance
::~~20o~
__~nrJV1.8~K~~
+5v
50n
350
OV - - - - - o-"'JVV'Iw-'V'",-"+--I
_4V
-2V
MEASUREMENT CIRCUIT
Vee
= + 10Vdc
IK
SCOPE 541
OR EOUIVALENT
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-6
=
10Vdc
(adjust for lOrnA)
Pulse Volts
Internal ReSistance
2N708
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Emitter Voltage
VCER
20
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current -
Continuous
limited by Po only
IC
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
360
2.1
mW
mWI"C
Total Device Dissipation @ TC = 25°C
TC = 100°C
Derate above 25°C
Derate above 1OO°C
Po
1.2
680
6.9
6.9
Watts
mW
mWI"C
mWI"C
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
JAN, JTX AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
I
3
2
~~'~·'
1 Emitter
1
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
Refer to 2N2368 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
-
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 30 mAde, RBE '" 10 ohms)
VCER(sus)
20
Collector-Emitter Sustaining Voltage
(lC = 30 mAde, IB = 0)
VCEO(sus)
15
V(BR)CBO
40
-
V(BR)EBO
5.0
-
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lC = 1.0
~dc,
IE = 0)
(IE = 10 ~dc, IC = 0)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0.25 Vde, TA = + 125°C)
ICEX
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 20 Vde, IC = 0, TA = 150°C)
ICBO
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
lEBO
-
Vdc
Vdc
Vde
10
~de
0.025
15
~de
0.08
~dc
ON CHARACTERISTICS
DC Current Gain
(lc = 0.5 mAde, VCE = 1.0 Vdc)
(lC = 10 mAde, VCE = 1.0 Vde)(l)
(lC = 10 mAde, VCE = 1.0 Vde, TA = -55°C)(I)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 7.0 mAde, IB = 0.7 mAde, TA = - 55°C to + 125°C)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 7.0 mAde, IB = 0.7 mAde, TA = -55°C)
VBE(sat)
-
15
30
15
120
-
0.4
0.4
-
Vde
Vde
0.72
-
0.80
0.90
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0,100 kHz'" f '" 1.0 MHz)
Extrinsic Base Resistance
(lC = 10 mAde, VCE = 10 Vdc, f = 300 MHz)
fr
300
-
Cobo
-
6.0
pF
rb'
-
50
ohms
ts
-
25
ns
MHz
SWITCHING CHARACTERISTICS
Storage Time
(lC = IBI = IB2 = 10 mAde)
Turn-On Time
ton
-
40
ns
Turn-Off Time
toff
-
70
ns
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-7
2N718
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage(1)
VCER
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Rating
IC
500
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0.4
2.66
Watt
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.5
10
Watts
mWfC
Collector Current -
•
Continuous
Total Device Dissipation @TC = 100°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
0.75
-65 to
3 Collector
.:()
1 Emitter
GENERAL PURPOSE
TRANSISTOR
Watt
+ 175
NPN SILICON
°c
Refer to 2N221 B for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 100 mAde, pulsed; RB '" 10 Ohms)
VCER(sus)
40
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 ~dc, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 1.0 mA, IC = 0)
V(BR)EBO
5
-
Vde
-
1.0
100
40
120
-
1.5
Vdc
1.3
Vde
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA = 150°C)
ICBO
~de
ON CHARACTERISTICS
DC Current Gain
(lC = 150 mAde, VCE = 10 Vde)
hFE
Collector-Emitter Saturation Voltage
(lc = 150 mAde, IB = 15 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
Output Capacitance
(VCB = 10 Vde, I = 100 kHz, IE = 0)
Cobo
-
35
pF
Input Capacitance
(VBE = 0.5 V, f = 100 kHz, IC = 0)
Cibo
-
80
pF
2.5
-
-
SMALL-SIGNAL CHARACTERISTICS
Small~Signal Current Gain
hie
(lC = 50 mAde, VCE = 10 Vde, 1= 20 MHz)
(1) Pulse Test: PW '" 300 Jl1l, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-8
2N718A
2N956
2N718A JAN, JTX,
JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3 Collector
~~,
MAXIMUM RATINGS
Symbol
2N71BA
2N956 2Nl711
Unit
Collector-Emitter Voltage
VCER
50
Vde
Collector-Base Voltage
VCBO
75
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
Rating
Total Device Dissipation @ TA = 25'C
Derate above 25'C
PD
Total Device Dissipation @ TC = 25'C
Derate above 25'C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
500
2.B6
1.B
10.3
BOO
4.57
3.0
17.15
2N1711
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
mW
mW/'C
3
2
1
GENERAL PURPOSE
TRANSISTORS
Watts
mWrC
-65 to +200
1 Emitter
'c
NPNSILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
(lC = 100 mAde, pulsed; RBE '" 10 ohms)
VCER(sus)
50
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 100 IlAde, 'E = 0)
V(BR)CBO
75
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 IlAde, IC = 0)
V(BR)EBO
7.0
-
-
Vde
0.001
0.01
10
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
(VCB = 60 Vde, IE = 0, TA
ICBO
=
-
-
-
-
0.010
0.005
2N956,2N1711
20
-
-
2N71BA,
2N956,2N1711
20
35
-
-
2N71BA,
2N956,2N1711
35
75
-
-
2N71BA,
2N956,2N1711
20
35
-
-
2N71BA,
2N956,2N1711
40
100
-
120
300
2N71BA.
2N956,2N1711
20
40
-
-
150'C)
Emitter Cutoff Current
(V BE = 5.0 Vde, IC = 0)
IlAde
-
'EBO
2N71BA.
2N956,2N1711
-
IlAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.01 mAde, VCE
(lC
= 0.1
mAde, VCE
=
hFE
10 Vde)
=
10 Vde)
(lC
=
10 mAde, VCE
=
10 Vde)
(lC
=
10 mAde, VCE
=
10 Vde, TA
(lC
(lC
=
=
150 mAde, VCE
500 mAde, VCE
=
=
=
-55'C)
10 Vde)
10 Vde)
-
-
-
-
-
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.24
1.5
Vde
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
1.0
1.3
Vde
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-9
•
2N718A,2N956,2N1711
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Chancteristic
Min
Typ
Max
60
70
300
300
-
Cobo
-
4.0
25
pF
Cibo
-
20
BO
pF
24
4.0
-
34
Symbol
Unit
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
100 kHz)
Input Impedance
(lc = 1.0 mAdc, VCB
(lC = 5.0 mAdc, VCB
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCB
•
fT
5.0 Vdc, f = 1.0 kHz)
10 Vdc, f = 1.0 kHz)
= 5.0 Vdc, f =
1.0 kHz)
2N71BA,
2N956,2N1711
-
-
=
1.0 kHz)
2N71BA,
2N956, 2N 1711
Small-Signal Current Gain
(lc = 1.0 mAdc, VCE = 5.0 Vdc, f
=
1.0 kHz)
2N71BA,
2N956, 2N 1711
30
50
-
=
1.0 kHz)
2N718A,
2N956, 2N1711
35
70
-
=
10 Vdc, f
Output Admittance
(lC = 1.0 mAdc, VCB
(lC = 6.0 mAdc, VCB
=
=
5.0 Vdc, f = 1.0 kHz)
10 Vdc, f = 1.0 kHz)
Noise Figure
(lC = 300 /LAde, VCE
-
hfe
5.0 mAde, VCE
(lC
=
5.0 mAdc, VCB
=
hrb
-
B.O
X 10- 4
3.0
5.0
3.0
5.0
100
200
-
150
300
-
0.5
0.5
I'mhos
hob
0.05
0.05
NF
=
10 Vde, f
=
1.0 kHz)
2N718A,
2N956,2N1711
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-10
MHz
ohms
hib
=
=
10 Vdc, f
(lC
=
2N71BA,
2N956, 2N 1711
-
dB
12
8.0
2N720A
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Emitter Voltage
VCER
100
Vdc
Collector-Base Voltage
VCBO
120
Vdc
Rating
VEBO
7.0
Vdc
Total Device Dissipation @ TA
Derate above 25'C
~
25'C
Po
0.5
2.86
Watt
mWI'C
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
Po
1.8
10.3
Watts
mWI'C
TJ, Tstg
-65 to +200
'c
Emitter-Base Voltage
Operating and Storage Junction
Temperature Range
'fl.
il ":~'".,
3 Collector
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lc ~ 100 mAde, RBE '" 10 ohms)
Collector-Emitter Sustaining Voltage(l)
(lC
(IE
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VCB
(VBE
~
~
~
~
(lC
Collector-Base Breakdown Voltage
~
~
~
100 !LAde, IE
~
100 !LAde, IC
~
~
90 Vde, IE
90 Vde, IE
~
5.0 Vde, IC
~
30 mAde, IB
0)
0, TA
~
0)
0)
0)
VCER(sus)
100
VCEO(sus)
80
V(BR)CBO
120
V(BR)EBO
7.0
ICBO
-
.010
15
!LAde
lEBO
-
.010
!LAde
hFE
20
35
20
-
40
120
-
1.2
5.0
Vde
-
0.9
1.3
Vde
MHz
150'C)
0)
-
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
~
(lC
(lC
(lC
(Ie
~
~
~
0.1 mAde, VCE ~ 10 Vde)
10 mAde, VCE ~ 10 Vde)(l)
10 mAde, VCE ~ 10 Vde, TA
150 mAde, VeE ~ 10 Vde)(1)
(lC
(lC
Collector-Emitter Saturation Voltage(l)
~
(Ie
(lC
Base-Emitter Saturation Voltage(l)
~
~
-55'C)
50 mAde, IB ~ 5.0 mAde)
150 mAde, IB ~ 15 mAde)
~
VCE(sat)
50 mAde, IB ~ 5.0 mAde)
150 mAde, IB ~ 15 mAde)
~
VBE(sat)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
(lC
~
50 mAde, VCE
10 Vde, IE
~
0, f
Bandwidth Product
(VCB
Output Capacitance
Input Capacitance
Input Impedance
(VBE
(lC
(lC
~
~
Voltage Feedback Ratio
~
(lC
(lC
0.5 Vdc, IC
~
1.0 mAde, VCB
5.0 mAde, VCB
(lC
(Ie
Small-Signal Current Gain
Output Admittance
~
~
~
~
~
(Ie
(lC
0, f
~
~
~
~
~
~
~
~
1.0 mAde, VCE
5.0 mAde, VCE
1.0 mAde, VCB
5.0 mAde, VCB
~
~
10 Vde, f
~
100 kHz)
5.0 Vdc, f
10 Vde, f
1.0 mAde, VCB
5.0 mAde, VCB
~
100 kHz)
~
~
1.0 kHz)
1.0 kHz)
5.0 Vde, f
10 Vde, f
~
~
~
~
5.0 Vde, f
10 Vde, f
1.0 kHz)
1.0 kHz)
~
~
1.0 kHz)
1.0 kHz)
5.0 Vde, f ~ 1.0 kHz)
10 Vde, f ~ 1.0 kHz)
20 MHz)
50
-
Cobo
-
15
Cibo
-
85
pF
hib
20
4.0
30
Ohms
B.O
hrb
-
1.25
1.50
hfe
30
45
tr
hob
-
(1) Pulse Test: Pulse Width", 300 !'S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-11
100
0.5
0.5
pF
X 10-4
I'mhos
•
2N835
CASE 22-03; STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vde
Collector-Emitter Voltage
VCES
30
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
~
3 Collector
Total Device Dissipation @ T A
Derate above 25°C
= 25°C
Po
0.3
2.0
Watt
mWrC
II ":~~,
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
1.0
6.67
Watts
mWrC
SWITCHING TRANSISTOR
Total Device Dissipation @ TC
Derate above 100°C
=
Po
0.5
6.67
Watt
mWrC
NPN SILICON
TJ, Tstg
-65 to + 175
°c
Collector Current -
•
Symbol
Continuous Peak
100°C
Operating and Storage Junction
Temperature Range
Refer to 2N2368 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Base Breakdown Voltage
(lc = 100 !lAde, IE = 0)
V(BR)CBO
40
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
V(BR)EBO
5.0
-
Vde
-
0.5
30
ICES
-
10
hFE
25
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCB = 20 Vde, IE = 0)
(VCB = 20 Vde, IE = 0, TA
ICBO
=
150°C)
Collector Cutoff Current
(VCE = 30 Vde, VBE = 0)
!lAde
pAde
ON CHARACTERISnCS
DC Current Gain(l)
(lc = 10 mAde, VCE
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
Vde
-
0.25
0.4
VBE(sat)
-
0.9
Vde
tr
350
-
MHz
Cobo
-
4.0
pF
ihfei
3.5
-
-
ts
-
25
ns
ton
-
35
ns
toff
-
75
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 15 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
100 kHz)
Magnitude of Forward Current Transfer Ratio, Common-Emitter
(lc = 10 mAde, VCE = 15 Vde, f = 100 MHz)
SWITCHING CHARACTERISTICS
Charge-Storage Time Constant (Figure 2)
(lC = 10 mAde, IBI = IB2 = 10 mAde)
Turn-On Time (Figure 1)
(lC = 10 mAde, IBI = 3.0 mAde, IB2
=
1.0 mAde)
Turn-Off Time (Figure 1)
(lC = 10 mAde, IBI = 3.0 mAde, IB2
=
1.0 mAde)
(1) Pulse Test: Pulse Width .. 12 ms, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-12
Symbol
Rating
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VCES
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector Current -
11
2N869A
MAXIMUM RATINGS
Continuous
2N869A 2N4463
18
18
2S
S.O
Vde
mAde
Total Device Dissi pation @ TA
Derate above 2S·C
=
2S·C
Po
360
2.06
400
2.29
mW
mWrC
Total Device Dissipation @ TC
TC
Derate above 2S·C
=
=
2S·C
100·C
Po
1.2
0.686
6.86
2.0
1.03
11.3
Watts
Watts
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
JAN, JTX, JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
~lIector
Vde
200
IC
Vde
Vde
2S
2S
Unit
-6S to +200
·C
3 2
B!S~
JAN.
J~~=LABLE I
CASE 26-03, STYLE 1 3
TO-46 (TO-206AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
2N869A 2N4453
Unit
Thermal Resistance, Junction to Case
R6JC
146
97.S
.C/W
Thermal Resistance, Junction to Ambient
R6JA
486
58S
·CIW
I
2
I
SWITCHING TRANSISTORS
PNP SILICON
ELECTRICAL CHARACTERISTICS (fA = 2S·C unless otherwise noted.)
Symbol
Min
V(BR)CEO
18
-
Vde
V(BR)CES
25
-
Vde
VCEO(sus)
18
-
Vdc
V(BR)CBO
25
-
Vde
V(BR)EeO
S.O
-
Vde
Iceo
-
25
pAde
ICES
-
10
nAde
IEeO
-
10
nAde
IB
-
10
nAde
2N869A
2N869A
30
40
120
2N869A, 2N44S3
40
120
2N869A, 2N4453
2N869A, 2N4453
17
25
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
2N4453
Collector-Emitter Breakdown Voltage
(lC = 10 pAde, VBE = 0)
2N869A, 2N4453
Collector-Emitter Sustaining Voltage(1)
(lc = 10 mAde, Ie = 0)
Collector-Base Breakdown Voltage
(lc = 10 pAde, IE = 0)
2N869A, 2N4453
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Collector Cutoff Current
(Vce = 15 Vde, IE = 0, TA
=
2N869A
150·C)
Collector Cutoff Current
(VCE = 15 Vde, VBE = 0)
Emitter Cutoff Current
(VEB = 4.5 Vde, IC = 0)
Base Current
(VCE = 15 Vde, VBE
2N4453
2N869A
= 0)
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 10 mAde, VCE
(lc = 10 mAde, VCE
(lC
= 30 mAde, VCE = 0.5 Vde)
(lC
(lC
= 30 mAde, VCE = 0.5 Vde, TA =
= 100 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage
(IC = 10 mAde, Ie = 1.0 mAde)
(lC = 30 mAde, Ie = 1.5 mAde)
(lC = 30 mAde, Ie = 3.0 mAde)
(lc = 100 mAde, Ie = 10 mAde)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 30 mAde, IB = 1.5 mAde)
(lC = 30 mAde, IB = 3.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
-
hFE
= 0.3 Vde)
= 5.0 Vde)
-55·C)
VCE(sat)
2N869A
2N4453
2N869A
2N869A, 2N4453
-
-
Vde
0.15
0.25
0.2
0.5
Vde
VBE(sat)
2N869A
2N4453
2N869A
2N869A, 2N4453
0.78
0.8
0.85
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-13
0.98
1.1
1.2
1.7
•
2N869A, 2N4453
ELECTRICAL CHARACTERISTICS
(continued) (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
fr
400
-
MHz
Cabo
-
6.0
pF
Cibo
-
6.0
pF
Ccb
-
6.0
pF
Ceb
-
6.0
pF
50
ns
35
ns
20
ns
80
ns
ts
-
65
ns
tf
-
20
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Ilroduet(1)(2)
(lC = 10 mAde, VCE = 15 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE
= 0, f =
140 kHz)
2N869A
Input Capacitanca
(VBE = 0.5 Vdc, Ie
= 0, f =
150 kHz)
2N869A
Colleetor-Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f
=
1.0 MHz)
2N4453
Emitter-Base Capacitance
(VBE = 0.5 Vdc, Ie = 0, f
=
1.0 MHz)
2N4453
SWITCHING CHARACTERISTICS
Turn-On Time
Vee
IC = 30 mAde,
IBl = 1.5 mAde
DelavTime
Rise Time
VCC
= 2.0 Vdc, 2N869A
2N4453
= 3.0 Vdc 2N4453
-
ton
td
tr
IC = 30 mAde,
IBl = IB2 =
1.5 mAde
Turn-Off TIme
Storage Time
Vce
VCC
= 2.0 Vdc 2N869A
2N4453
= 3.0 Vdc 2N4453
toff
Fall TIme
(1) Pulse Test: Pulse Width", 300 /J1l, Duty Cvcle = 1.0%.
(2) fr is defined as the frequency at which Ihfel extrapolates to unity.
TYPICAL SWITCHING CHARACTERISTICS
FIGURE 1 -
CAPACITANCE
0
I-7. 0
~
TJ= 25 0 C-
.........
......
5. 0
...
~
Z
~ 3. 0
I""--
U
:i:
...~
"
2.0
-r-1.0
0.3
FIGURE 2 300
Cob
"-
Q.
W
\
r-.... 1\
I'-.
Ccb ~ Cob
I"'--
lej Ilii
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
VR, REVERSE VOLTAGE (VOLTS)
~
z
;;:
~
to
ffi
~ 100
~
-TJ = 250 C
1.2
"- "\
g 1.0 f---
1'\
c
~
O.8
~
t- JBEi..t) @IC/IB
to
f--TJ
I I 5.0I
3.0
100
V8E(on) @VCE = 5.0 V
./
,../
o. 2
-
\
70
r--
>" O.4
~
7.0 10
20
30
50
IC. COLLECTOR CURRENT (rnA)
f--"
>
\
= 250 C
10
o
\.
0
=
W
~ O.6f--- _
0
3o
2.0
"ON" VOLTAGES
1.4
i3
...c
30
FIGURE 3 -
DC CURRENT GAIN
~c$
200
-
20
0
2.0
200
- VCE( ..!)@IC/IB
3.0
5.0
7.0
10
10
20
30
50 70
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-14
100
200
2N869A, 2N4453
FIGURE 4 -
CURRENT-GAIN -
BANDWIDTH PRODUCT
FIGURE 5 -
:J::
~
-
t;
c
c"
VCE=15V
f= 100 MHz
TJ = 25°C
0
./
z
w
'";::-' 7.00
/"
~ 500
5.0
I
z
0.4
20
0.2
f'"
i--VCE(sat) @ ICIIS
= 10
/'
V
o
0.01
0.1
1.0
10
'C, COLLECTOR CURRENT (MA)
100
300
1.0
10
100
'C, COLLECTOR CURRENT (MA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-29
500
•
2N2102
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
65
Vde
Collector-Emitter Voltage, RBE '" 10 Ohms
VCER
80
Vde
Collector-Base Voltage
VCBO
120
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
IC
1.0
Ade
Collector-Emitter Voltage
Collector Current -
Continuous
CASE 79·04, STYLE 1
TO-39 (TO-205ADI
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
1.0
5.71
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25'C
=
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
'C
Symbol
Max
Unit
RruC
35
'CIW
RruA(I)
175
'CIW
25'C
Operating and Storage Junction
Temperature Range
,f/! .:~"2
THERMAL CHARACTERISTICS
•
1
1 Emitter
AMPLIFIER TRANSISTOR
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPNSILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC
Collector-Emitter Sustaining Voltage(2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lC
(lC
(IE
=
=
=
100 mAde, RBE '" 10 ohms)
=
100 mAde, IB
100 IlAde, VEB
100
IlAde,
= 0)
= 1.5 Vde)
= 0)
= 0)
IE
100 IlAde, IC
= 60 Vde, IE = 0)
= 60 Vde, IE = 0, TA =
= 5.0 Vde, IC = 0)
(VCB
(VCB
(VBE
=
(lc
VCER(su~
80
-
VCEO(sus)
65
-
V(BR)CEX
120
V(BR)CBO
120
-
V(BR)EBO
7.0
-
ICBO
-
lEBO
-
-
150'C)
-
-
Vde
Vde
Vde
Vde
Vde
2.0
2.0
nAde
IlAde
2.0
nAde
ON CHARACTERISTICS
= 0.1 mAde, VCE = 10 Vde)
= 10 mAde, VCE = 10 Vde)
= 10 mAde, VCE = 10 Vde, TA = -55'C)
= 150 mAde, VCE = 10 Vde)(2)
= 500 mAde, VCE = 10 Vde)(2)
= 1.0 Ade, VCE = 10 Vde)(2)
Colleetor·Emitter Saturation Voltage (lC = 150 mAde, IB = 15 mAde)
Base-Emitter Saturation Voltage (lC = 150 mAde, IB = 15 mAde)
DC Current Gain
(lc
(lc
(lc
(lC
(lC
(lc
20
35.
20
40
25
10
hFE
-
-
-
-
VBE(sat)
-
fr
60
-
Cobo
-
Cibo
-
hib
24
4.0
hrb '
-
120
-
-
0.15
0.5
Vde
0.88
1.1
Vde
-
MHz
6.0
15
pF
50
80
pF
34
8.0
Ohms
-
-
-
3,0
3.0
X 10-4
hfe
30
35
-
100
150
hob
0.Q1
0.Q1
-
0,5
1.0
I
.s>-
1.0
'"....
0
>
>-
~
VSE(...I@ICIIS· 10
0.6
(25 0 C'0
+0.8
~
;:;
./
0
2 o.S
w
<
>-
1111
13
'<.
1.2
1750 CI i-"
Ilj..../'(
8VC for VCE(sa.I
(-55 0 C.o l25 0 CI
~
2w
VSE@VCE' 1.0 V
0:
::>
-o.S
.... ./
>-
<
0.4
~
II 1111
II
0.2
0
0.5
1.0
2.0
5.0
10
~
.......
VCE(sa'I@IC/IS -10
20
50
100
f--
-1.6
,II
>-
i
200
500
-2.4
0.5
8VS for VSE
I
,II
1.0
5.0
2.0
10
20
50
100
200
500
IC. COllECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
hPARAMETERS
VCE
= 10 Vdc. f = 1.0 kHz. T A = 25°C
This group of graphs illustrates the relationship between hfe and other "h" parameters
for this series of transistors. To obtain these curves, a high~gain and a low-gain unit were
selected and the same units were used to develop the correspondingly numbered curves
on each graph.
FIGURE 6 - VOLTAGE FEEDBACK RATIO
FIGURE 5 -INPUT IMPEDANCE
20
!
::!!
~
i""
.....
0
0
,
~
7.0
5.0
,,;
20
\
o
i
.....
~. 3. 0
......
2r-....
..........
1. 0
~
~w
1
.......
~ 2. 0
i.J
\.
30
.....
O. 7
O.5
~
O.3
0.1
0.2
0.5
1.0
5.0
2.0
10
5. 0
'"~
~
3.0
J
2.0
r-
1
I.......
2
........ .....
0.2
Ie. COLLECTOR CURRENT (mAdel
0.5
1.0
.....
.....
5.0
2.0
10
20
Ie, COLLECTOR CURRENT (mAdei
FIGURE 8 -
FIGURE 7 - CURRENT GAIN
300
OUTPUT ADMITTANCE
200
200
V
.....
....... ,...
1
--
....... ~
-
.......
0
V
30
0.1
i
~
V
.J
0.2
0.5
1.0
2.0
5.0
10
'/
50
I
!
./
J
,. 100
~
2
50
.....
.....
1. 0
0.1
20
\
0'
20
10
-
5. 0
0.1
20
Ie, COlLECTOR CURRENT (mAdei
IV ....
~
./
.....V
0.2
0.5
1.0
2
2.0
Ie. COLLECTOR CURRENT (mAdel
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-34
i-"
5.0
10
20
2N2218/19/21/22, A SERIES, 2N5581/82
SWITCHING TIME CHARACTERISTICS
FIGURE 10 - CHARGE DATA
FIGURE 9 - TURN·ON TIME
200
100
,
\.
10.000
~
'I'
t,@SV
I\.
5000 ~ ~
TJ = 2SoC
le/l,= 10
t,
,
;'
-t,@V"I"'I=O
300
5.0
~
100
~
70
z:
50
~
I;;
.,;
.:
100
"
IIIII
7.0 10
S.O
I
20
30
50 70
Ie, COLLECTOR CURRENT (mAl
"
......
"
~lell,,=10
.....
..........
.......
if
r-...
!'
50
70
........
r--..
LOW GAIN TYPES
TJ=25'C
I
I
I
20
30
~
lell" = 20 ~ ~
roo:
.........
0:"~ 10
l'.
lell" -10
"r--...
100
200 300
70
"
50
I
lell"
..........
=
10
.,; 30
.........
100
,
-
~
~ r--
20
lell"
Q
~
- r-~
200
-r-r:..r--
I I
10
10
20
3.0
300
--;"
30
t--
~.QA, ACTIVE REGIO~t: ALL TYPES
CHARGE 50
~
200
"
30V
Vee
100
...." "'"
20
30
50
Ie, COLLECTOR CURRENT (mAl
lell" = 10
20
l.I
,
HIGH GAIN TYPES
L?W GAIN TY PES
200 i--'"
......
""
Q
""
\iJ
,/
......
;:::
QT, TOTAL CONTRO~~
CHARGE
RGURE" - TURN·OFF BEHAVIOR
300
200
~
~
'r-."-
10
...
~
\iJ sao
"
~
~
20
10
3.0
....
".
1000
\
~
-
2S'C
2000
Vee 30 V
UNLESS NOTED
-~
t..@V"I"'I,
['( 2V
"\
30
TJ
lell. 10
l - tl - t- Vee = SV (UNLESS NOTEDI
....
""""-.
if
,.....
I-
.:
.........
200
20
I>
I
HIGH GAIN TYPES
10
10
300
TJi25'IC
50
70
100
30
Ie, COlLECTOR CURRENT (mAl
20
Ie. COLLECTOR CURRENT (mAl
FIGURE 12 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
GENERATOR RISE TIME" 2.0 lIS
1'1'1" 200ns
+30 V
DUTY CYCLE· 2.0%
200
300
FIGURE 13 - STORAGE TIME AND FALL
TIME EQUIVALENT TEST CIRCUIT
DUTY CYCLE· 2.0%
l ~r~ ~O:.::s
+30 V
200
+16.2 V
9. 9V
n
0-
619
o-...=.!--~ 0.5
o-"""lf""'1o+-i
V
-=
OSCI LLOSCOPE
Rin > 100 k ohms
Cin" 12pF
RISE TIME" 5.0 lIS
SCOPE
~500Ps-1
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-35
Ri" > 100 k ohml
Cin" 12pF
RISE TIME" 5.0 n.
•
2N2223, A For Specifications, See 2N2060 Data
2N2270
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Emitter Voltage, RBE "" 10 Ohms
VCER
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
1.0
Adc
Collector Current -
Continuous
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
3 Collector
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
1.0
5.71
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
,f/! .~()
1 Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
•
Characteristic
Symbol
Max
Unit
R9JC
35
°C/W
R9JA(I)
175
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
NPN SILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC
V(BR)CER
60
-
-
Vdc
Collector-Emitter Sustaining Voltage(2)
(lc
VCEO(sus)
45
-
-
Vdc
V(BR)CBO
60
-
Vdc
V(BR)EBO
7.0
ICBO
-
-
!lAdc
-
0.05
100
lEBO
-
-
100
nAdc
30
50
90
135
200
= 100 mAdc, RBE "" 10 Ohms)
= 100 mAdc, IB = 0)
Collector-Base Breakdown Voltage (lC = 0.05 !lAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 0.1 mAdc,lc = 0)
Collector Cutoff Current (VCB = 60 Vdc, IE = 0, TC = 25°C)
(VCB = 60 Vdc, IE = 0, TC = 150°C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
-
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc)
(lC = 150 mAdc, VCE = 10 Vdc)
hFE
-
-
Collector-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAdc)
VCE(sat)
-
0.15
0.9
Vdc
Base-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAdc)
VBE(sat)
-
0.88
1.2
Vdc
100
250
-
MHz
SMALL-8IGNAL CHARACTERISTICS
IT
Current-Gain - Bandwidth Product
(lC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
Input Capacitance
(VBE = 0.5 Vdc, IC
10
15
pF
Cibo
-
60
80
pF
hfe
50
-
275
-
NF
-
7.0
10
dB
30
ns
Cobo
=
100 kHz)
= 0, f =
100 kHz)
Small-Signal Current Gain
(lC = 5.0 mAdc, VCE = 10 Vdc, f
=
Noise Figure
(lC = 0.3 mAdc, VCE = 10 Vdc, RS
f = 1.0 kHz, B.W. = 1.0 Hz)
1.0 kHz)
=
1.0 k Ohm,
SWITCHING CHARACTERISTICS
I Total Switching Time
ton + toff
(1) R9JA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width"" 300 /LB, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-36
MAXIMUM RATINGS
Symbol
Rating
Collector-Emitter Voltage
Vde
15
20
2N236B,9.A
2N3227
Collector-Emitter Voltage
VCES
40
Collector-Base Voltage
VCBO
40
Emitter-Base Voltage
VEBO
Collector Current -
Continuous
2N2369A,
2N3227
Vde
2N2369A JAN, JTX
JTXV AVAILABLE
CASE 22·03, STYLE 1
TO·18 (TO·206AAI
4.5
6.0
IC(Peak)
500
mA
IC
200
mA
0.36
2.06
Watt
mWrC
Total Device Dissipation
@TA=25'C
Derate above 25'C
Po
Total Device Dissipation
@TC=25'C
Derate above 25'C
Po
1.2
6.B5
Watts
mWrC
.68
6.B5
Watts
mWrC
-65 to +200
'c
2N3227
Total Device Dissipation
@TC = 100'C
Derate above 100'C
Vde
Vde
2N236B,9.A
2N3227
Collector Current
(10 p.S pulse)
2N2368
2N2369,A
2N3227
Unit
Value
VCEO
3
/I
TJ, Tstg
1 Emitter
1
SWITCHING TRANSISTORS
Po
Operating and Storage Junction
Temperature Range
2
~~"~"'
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
V(BR)CEO
20
-
Vde
Collector-Emitter Breakdown Voltage
(lC = 10 IJA. VBE = 0)
V(BR)CES
40
-
Vde
Collector-Emitter Sustaining Voltage( 1)
(lC = 10 mAde, IB = 0)
VCEO(sus)
15
Collector-Base Breakdown Voltage
(lC = 10 JotA, IB = 0)
V(BR)CBO
40
-
4.5
6.0
-
-
0.2
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, VBE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 JotAde, IC = 0)
Collector Cutoff Current
(VCE = 20 Vde, VBE = 3.0 Vde)
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
2N3227
V(BR)EBO
2N236B,2N2369,2N2369A
2N3227
ICEX
Vde
Vde
JotAde
2N3227
ICBO
2N2368, 2N2369
2N3227
(VCB = 20 Vde, IE = 0, TA = 150'C)
Vde
2N236B, 2N2369, 2N2369A
2N3227
Collector Cutoff Current
(VCE = 20 Vde, VBE = 0)
2N2369A
Base Current
(VCE = 20 Vde, VBE = 0)
2N2369A
ICES
IB
-
JotAde
0.4
0.2
30
50
0.4
JotAde
0.4
JotAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE = 1.0 Vde)
hFE
2N236B
2N2369
2N2369A
2N3227
20
40
100
(lC = 10 mAde, VCE = 1.0 Vde, TA = -55'C)
2N236B
2N2369
2N3227
10
20
40
-
(lC = 10 mAde, VCE = 0.35 Vde, TA = -55'C)
(lC = 30 mAde, VCE = 0.4 Vde)
2N2369A
2N2369A
20
30
-
-
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
3-37
60
120
120
300
-
-
•
2N2368,2N2369,A,2N3227
ELECTRICAL CHARACTERISTICS (continued) (TA = 2S'C unless otherwise noted.)
Symbol
Characteristic
=
100 mAde, VCE
=
1.0 Vde)
2N2369A
2N3227
20
30
(lC
=
100 mAde, VCE
=
2.0 Vde)
2N2366
2N2369
10
20
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAde, la = 1.0 mAde)
•
Min
(lC
(lC
(lC
= 10 mAde, Ie =
= 30 mAde, Ie =
(lC
=
100 mAde, Ie
1.0 mAde, TA
3.0 mAde)
=
=
100 mAde, Ie
=
=
2N2369A
2N3227
0.25
0.20
0.30
0.25
0.50
.45
Vde
VBE(sat)
=
=.
All Types
2N2369A
2N2369A
2N2369A
+ 12S'C)
-55'C)
0.70
0.59
2N2369A
2N3227
10 mAde)
Unit
Vde
-
-
2N2369A
2N2369A
+125'C)
10 mAde)
ease-Emitter Saturation Voltage(l)
(lC = 10 mAde, Ie = 1.0 mAde)
(IC = 10 mAde, Ie = 1.0 mAde, TA
(lC = 10 mAde, Ie = 1.0 mAde, TA
(lC = 30 mAde, Ie = 3.0 mAde)
(lC
VCE(sat)
2N2366, 2N2369, 2N3227
2N2369A
Max
0.85
-
-
1.02
1.15
0.8
1.60
1.4
400
500
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - eandwidth Product
(Ie = 10 mAde, VCE = 10 Vde, f = 100 MHz)
2N2368
2N2369, 2N2369A, 2N3227
Output Capacitance
(Vce = 5.0 Vde, IE
= 0, f =
140 kHz)
All Types
Input Capacitance
(VeE = 1.0 Vde, Ie
= 0, f =
140 kHz)
2N3227
tr
Cobo
eibo
-
MHz
4.0
pF
4.0
pF
SWITCHING CHARACTERISTICS
I
I
Delay TIme
Rise Time
(Vee = 10 V, VEe = 2.0 Vde,
100 mA, lel = 10 mAl
Storage Time
(Ie = lel = 10 mAde, IB2 = -10 mAde)
(Ie = 100 mAde, lel = IB2 = 10 mAde, Vce
Fall TIme
(Vec = 10 V, IC
=
100 mA, 181
=
182
=
2N3227
tr
-
5.0
ns
18
ns
ns
ts
=
-
2N2368
2N2369A
2N3227
10 V)
tf
2N3227
10 rnA)
Turn-On Time
(Ie = 10 mAde, 181
= 3.0 mA, le2 =
-l.S mA, Vee
= 3.0 Vde)
All Types
Turn-Off Time
(Ie = 10 mAde, lel
= 3.0 mA, le2 =
-l.S mA, Vee
= 3.0 Vde)
2N2368
2N2369,
2N2369A,
2N3227
Total Control Charge
(Ie = 10 mA, Ie = 1.0 rnA, Vee
td
ton
toff
-
0.,.
= 3.0 V)
-
15
ns
12
ns
-
-
15
18
-
50
2N3227
(1) Pulse Test: Pulse Width"" 300 p,S, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-38
10
13
13
ns
pC
2N2368,2N2369,A,2N3227
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
FIGURE 1 -
ton CIRCUIT -
10 rnA
FIGURE 3 -
+ 10.75 V --l
_.L..
'T' .
_..JC,<4p'
PULSE WIDTH (I,) = 300 ns
• DUTY CYCLE = 2%
PULSE WIDTH (1,)= 300
DUTY CYCLE = 2%
FIGURE 2
I,
-Ion CIRCUIT -
100 rnA
=4l<
3V
10 rnA
270 !l
_....
,...r,
_J Cs·< 4pf
n.
FIGURE 4 -
+1l.4:n_
I-
+10'BV~
-2V
I+-
_9'1~?"J;---,.
v-=i~ri>
,
-l
I,
toft CIRCUIT -
toft CIRCUIT -
100 rnA
,
" ...,
-B.6;~n.
In.
PULSE WIDTH (I,) = 300 ns
OUTY CYCLE
2%
-"'-
_JCs
PULSE WIDTH (I,) BETWEEN 10 AND
DUTY CYCLE = 2%
=
.
< 12pf
SOO~s
• Total shunt capacitallce of test jig and connectors.
FIGURE 5 -
TURN-ON AND TURN-OFF TIME TEST CIRCUIT
TURN·ON WAVEFORMS
OVi'~+ 10%
220!)
~ 90%
•
V,n
tOil.
O.II'F
t7X
3.3K!)
v••,
50!)
TO OSCILLOSCOPE
INPUT IMPEDANCE ~ 50!)
RISE TIME ~ I ns
3.3K '-!)(
PULSE GENERATOR
V" RISE TIME < I ••
SOURCE IMPEDANCE ~ 50!)
PW~300 ••
DUTY CYCLE < 2%
FIGURE 6 -
r- r-
o005"F
O.I~"
"O.II'F
JUNCTION CAPACITANCE VARIATIONS
-,
WAVEFORMS
::--n..-----IO%
I
FIGURE 7 -
"-
=
:-",...
l"-
1--
i'
~F
Vee
~
oS 20
/
f3
'"
;::
co
iZ
Vee
= 10 V
~
.""-"'
"-
i:'-
% 10
~
......
= 2V
1\
\ 1\
I, (Vee = 3 V)
u
C••
_10
= 10V
VOl
\ \'
1\\
- - -...
" r--
'\.
I\.
50
r-.. . . .
TYPICAL SWITCHING TIMES
"\.
r-- .....
C,.
90%
~Vcc~3V
100
-LIMIT I
- -TYPICAL
T, 25°C-
"-
'-'
~URN·OFF
0.0023~
~~
VII ~'l
,........
..;::
0.0023"F
0.0051'F
50!)
~
I .......
~ ~r--
f.-- V
i"=
"\.
~
2
I
0.1
0.2
0.5
1.0
2.0
5.0
I
10
REVERSE BIAS (VOLTS)
10
20
Ie, COLLECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-39
50
100
•
2N2368,2N2369,A,2N3227
FIGURE 8 - MAXIMUM CHARGe DATA
500
l
I
I
r- Vee = 10 V
_ - -!Oooe
II
I II
r----25°e
I
a"r;, =
10
~I"Y
I
200
aT, r;,
= 40
"
'\
I
,,/
K0V
./
T
V
/
100
~
w
'"
'"
~
-,..-
50
1"';"'--
.~
V
V
c
:IE
:>
,.
'"
Z
__
SO
V
20
V
I
I-""
~
TJ
.....
----- ---- ---
TJ
= 12SoC
I
::::::: ~
-
TJ _ 7S 0 C
= 2SoC
f-
.......
Jo-
TJ
I
-.....-=-.
~
1 1
TJ
I
leEr,
- ----
I ,lS~C
~ ......
----
= -SSoC
r-
............
~
:""
r--......
~
-......:
.........
............
......::
i'- ....... ~~
i'- ........ "1'
i'-
20
10
2tC and 7SoC
TJ
100
SO
Ie, COLLECTOR CURRENT (mA)
RGURE 14 - SATURATION VOLTAGE LIMITS
1.4
~
?
1.2
!;i
1.0
~
1.0
r- T:~=2~~C
O.S
MAX~,,~
i;!
2
~
ffi -0.5
8
MAX VeE /""
".
0.2
q ,,-2.0
10
20
50
100
Ie, COLLECTOR CURRENT (mA)
I
-1.5
-2.5
I
f
o
fJv.
(~5S0C'TO +isoC)
I
(25°C TO 125°C)
torV'E/J.f,
I I
10
20
30
40
50
60
70
Ie COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-41
T
(ISSOCITO +TC)
FROM NOMINAL
55°C TO +25°C
25°CT0125°C
+O.lSmV/oC
.... O.l5mV/OC
::t:O4 mV/DC
+O.3mV/oC
""...
§ -1.0
-
(2S0C TO 12'S0 C)
(Jvc for VeE/lltl
APPROXIMATE DEVIATION
;:;
0.6
J 0.4
.....
g
I
I I
~
~
V
r::-:::'II
MIN VIEt'.'1
z: 0.8
~:I
RGURE 15 - TYPICAL TEMPERATURE COEFFICIENTS
1
~l
80
90
100
•
2N2453,A
CASE 654·07, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
2N2463 2N2463A
Unit
Collector-Emitter Voltage
VCEO
30
50
Vde
Collector-Base Voltage
VCBO
60
80
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
IC
50
mAde
Collector Current -
Continuous
One Die Both Die
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
200
1.14
300
1.71
mW
mWf'C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
600
3.43
1200
6.86
mW
mWf'C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
Emitter 3
5 Emitter
DUAL
AMPLIFIER TRANSISTORS
NPN SILICON
·C
Refer to 2N2920 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustsining Voltage(l)
(lC = 10 mAde, IB = 0)
VCEO(sus)
2N2453
2N2453A
Collector-Base Breakdown Voltage
(lC = 10 ,..Ade, IE = 0)
V(BR)CBO
2N2453
2N2453A
Emitter-Base Breekdown Voltage
(IE = 0.1 ,..Ade, IC = 0)
Collector Cutoff Current
(VCB = 50 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA
30
50
60
80
V(BRIEBO
ICBO
=
150"C)
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
lEBO
7.0
-
-
Vde
Vde
Vde
,..Ade
0.005
10
0.002
,..Ade
ON CHARACTERISTICS
DC Current Gain
(lC = 10 ,..Ade, VCE = 5.0 Vde)
(lC = 10 ,..Ade, VCE = 5.0 Vde, TA = -55'C)
(lc = 1.0 mAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vde, TA = -55'C)
hFE
80
40
150
75
-
-
600
-
1.0
Vde
VBE(sat)
-
0.9
Vde
If
60
-
MHz
Cobo
-
8.0
pF
Cibo
-
10
pF
hie
5.0
-
kohms
hib
20
30
Ohms
Collector-Emitter Saturation Voltage
(lC = 5.0 mAde, IB = 0.5 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 5.0 mAde, IB = 0.5 mAde)
SMALL·SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 10 Vde, f
=
30 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
140 kHz)
Input Impedance
(lC = 1.0 mAde, VCE
=
=
1.0 kHz)
Input Impedance
(lC = 1.0 mAde, VCB
= 5.0 Vde, f =
1.0 kHz)
5.0 Vde, f
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-42
2N2453,A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE
Voltage Feedback Ratio
(lC = 1.0 mAde, VCB
=
5.0 Vde, f
=
-
1.0 kHz)
hrb
= 5.0 Vde, f =
1.0 kHz)
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 5.0 Vde, f
=
1.0 kHz)
Output Admittance
(lC = 1.0mAde,VCE
=
5.0Vde,f
=
1.0 kHz)
Output Admittance
(lC = 1.0 mAde, VCB
=
5.0 Vde, f
=
1.0 kHz)
Noise Figure
(lC = 10 l-it. -
1111
~ ......
FIGURE 8 -
STORAGE TIME BEHAVIOR
50
20
S.O 7.0 10
Ie. COLLECTOR CURRENT (mAl
Ie. COUECTOR CURRENT (mAl
30
RISE TIME BEHAVIOR
500
......
50 70 100
"
~
~
i"""
0
S.0
200
1.0
Ie. COLLECTOR CURRENT (mAl
~
2.0 3.0
S.O 7.0 10
20
30
Ie. COllECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-46
~~
50 70 100
200
2N2481
FIGURE 9 - JUNCTION CAPACITANCE VARIATIONS
10
7.0
~
j
5.0
--'- ...
_i!
-
I-
i
~~
II
--MAXIMUM
--T'lPICAL
700 ::::::j:::::::t P.-IO
Tr 25'C
TJ 125'C
500
-- -
-..J.
C..
FIGURE 10 - MAXIMUM CHARGE DATA
1000
(
'-'1-
:::.-
~~
300
~~
.....
-- b.:::
~200
~
. . . . . !'-
Id
..... ro-.
-
I-
30
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
t7
~
Vcc-IOVdc
100
50
G.2
~ .......
IIr
70
3.0
2.0
0.1
~
~
20
1.8
10
REVERSE BIAS IVdcl
Vj-/°ri
a..
~
Vcc=3Vdc
2.0
3.0
5.0 7.0 10
20
30
Ie. COlLECTOR CUICRfIIT!mA1
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-47
50 70 100
200
•
2N2484
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
50
mAdc
JAN, JTX, JTXV AVAILABLE
CASE 22·03, STYLE 1
TO·18 (TO·206AA)
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
360
2.06
mW
mWrC
3 Collector
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
1.2
6.85
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
":~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RtiJC
146
·CIW
RtiJA(l)
485
·CIW
TL
300
·C
Thermal Resistance, Junction to Case
•
Thermal Resistance, Junction to Ambient
Lead Temperature
1/16" from Case lor 10 Seconds
AMPLIFIER TRANSISTOR
NPNSILICON
Refer to 2N2481 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(lC = 10 mAdc, IB = 0)
(lc = 10 !lAdc, IE = 0)
(IE = 10 !lAdc, IC = 0)
(VCB = 45 Vdc, IE = 0)
(VCB = 45 Vdc, IE = 0, TA = 150·C)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
V(BR)CEO
60
-
V(BR)CBO
60
-
V(BR)EBO
6.0
ICBO
-
lEBO
-
-
-
Vde
Vdc
Vdc
10
10
nAdc
!lAdc
10
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC
(lC
(lC
(lC
(lC
(lC
(lC
=
=
=
=
=
=
=
1.0 !lAdc, VCE = 5.0 Vdc)
10 !lAdc, VCE = 5.0 Vdc)
10 !lAdc, VCE = 5.0 Vdc, TA = 55·C)
100 !lAdc, VCE = 5.0 Vdc)
500 !lAdc, VCE = 5.0 Vdc)
1.0 mAdc, VCE = 5.0 Vdc)
10 mAdc, VCE = 5.0 Vdc)(l)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
(lC\= 1.0 mAdc,lB = 0.1 mAde)
(lc = 0.1 mAdc, VCE = 5.0 Vde)
-
-
30
100
20
175
200
250
-
190
250
40
275
300
350
400
VCE(sat)
-
0.25
0.35
Vde
VBElonJ
0.5
0.65
0.7
Vde
IT
15
60
50
100
-
-
MHz
-
3.0
6.0
4.0
6.0
pF
3.5
-
24
ill
h re
-
X 10-6
150
-
BOO
hie
900
hFE
500
BOO
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product (lc = 0.05 mAdc, VCE = 5.0 Vde, I =
5.0 MHz)
(lC = 0.5 mAde, VCE = 5.0 Vdc, f = 30
MHz)
Output Capacitance (VCB = 5.0 Vde, IE = 0, f = 140 kHz)
Cabo
Input Capacitance
Cibo
Input Impedance
(VBE = 0.5 Vde, IC = 0, f = 140 kHz)
(lC = 1.0 mAdc, VCE = 5.0 Vdc, t= 1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCE
Small-Signal Current Gain
Output Admittance
Noise Figure
J?io Vdc, f = 1.0 kHz)
(lc = 1.0 mAdy.VCE = 5.0 Vdc, f = 1.0 kHz
(IC = 1.0 mAdc, V-cE = 5.0 Vdc, I = 1.0 kHz)
hie
hoe
NF
(lc = 10 !lAdc, V%f 5.0 Vdc, RS = 10 kn,
f = 100 Hz, BW,= 20 Hz)
(lC = 10 !lAdc, VCE = 5.0 Vdc, RS = 10 kn,
I = 1.0 kHz, BW = 200 Hz)
(lC = 10 !lAdc, VCE = 5.0 Vdc, RS = 10 kn,
f = 10 kHz, BW = 2.0 kHz)
(lC = 10 !lAdc, VCE = 5.0 Vdc, RS = 10 kn,
I = 10 Hz to 15.7 kHz, BW = 15.7 kHz)
-
B.O
10
-
-
3.0
-
-
2.0
-
-
3.0
(1) RtiJA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width", 300 1'-8, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-48
40
pF
",mhos
dB
2N2501
CASE 22-03, STYLE 1
TO-1B (TO-206AA)
3 Collector
":~
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
VCEO
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0.36
2.1
Watt
mW/oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.2
6.9
Watts
mW;oC
SWITCHING TRANSISTOR
TJ, Tstg
-65 to +200
°c
NPN SILICON
Rating
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS
(TA
=
Unit
1 Emitter
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 30 mAde, IB = 0, Pulsed)
V(BR)CEO
20
Collector-Base Breakdown Voltage
(lc = 10 jJAde, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 10 jJAde, IC = 0)
V(BR)EBO
6.0
-
Collector Cutoff Current
(VCE = 20 Vde, VBE = 3.0 Vde)
ICEX
-
25
-
0.025
50
Characteristic
Max
Unit
OFF CHARACTERISTICS
Base Cutoff Cu rrent
(VCE = 20 Vde, VBE = 3.0 Vde)
(VCE = 20 Vde, VBE = 3.0 Vde, TA = 150°C)
IBL
Vde
Vde
Vde
nAde
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 100 "Ade, VCE = 1.0 Vde)
(lC = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde, TA = -55°C)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 5.0 Vde)
-
hFE
20
30
50
20
40
30
10
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IS = 1.0 mAde)
(lC = 50 mAde, IS = 5.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
VBE(sat)
-
150
-
Vde
0.2
0.3
0.4
Vde
0.85
1.0
1.2
SMALL-SIGNAL CHARACTERISTICS
for
350
-
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cobo
-
4.0
pF
Input Capacitance
(VEB = 0.5 Vde, IC = 0, f = 100 kHz)
Cibo
-
7.0
pF
3.5
-
-
Current-Gain - Bandwidth Product
(VCE = 20 Vde, IC = 10 mAde, f = 100 MHz)
Small-Signal Current Gain
(VCE = 20 Vde, IC = 10 mAde, f = 100 MHz)
hfe
MOTOROLA SMAll-SIGNAL TRANSISTORS. FETs AND DIODES
3-49
MHz
•
2N2501
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted.)
I
Characteristic
Min
Svmbol
Max
Unit
SWITCHING CHARACTERISTICS
15
ns
Clr
-
60
pC
TA
-
2.5
ns
Charge Storage Time Constant
(lC - IBI - IB2 - 10 mAde)
TS
Total Control Charge
(lc - 10 mAde. IB - 1.0 mAde)
Active Region Time Constant
(lC - 10 mAde)
(1) Pulse Test: Pulse Width", 300 ILS. Duty Cycle'" 2.0%.
FIGURE 1 -
•
COLLECTOR-EMITTER SATURATION VOLTAGES versus BASE CURRENT
0.7
lell.= 10
T, = 25°C
en
0.6
!:l
~ 0.5
~
!:l
i!
0.4
I
0.3
J
\
~
I\..
"""'"Ie
0.2
-
Ie = 100mA
N+
!e= SOmA
10mA
0.1
0.01
0.1
10
100
I.. BASE CURRENT (mAde)
FIGURE 2 - BASE-EMITTER VOLTAGE
versus COLLECTOR CURRENT
FIGURE 3 - TEMPERATURE COEFFICIENTS
1.0
2.0
;...
'"~
0
1.6
I III
T, = 25°C
lell. 10
g
=
8c:;
1.2
0.8
i
0.4
~
Io-'~I-'
'0
10
Ie. COLLECTOR CURRENT (mAde)
1
-
1-"""
8vcl-tt,2iW,
I III III
8
l~ll~tllllllllllllllllioo
~
>
0 f- VCI , ...
~-0.5
>
~...
I
BvcI2J to 1000 C)
>
....
'"
~
II~iI.= 10
~ 0.5
100
0.2
1
10
Ie. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-50
50
100
2N2501
FIGURE 5 FIGURE 4 -
7.0
f
~~'~ = I'SY'
.g 5.0
6.0
..
8
0.5
...
~
0.1
~
0.05
I-
\
'" 30
;::
~
C
Ycc =3Y
2.0
\
~
t-. 1.0
o
1.0
0.1
FIGURE 6 -
~
.>
a 1.8
;
i
0
.
!
~
...
......;::
I .•
FIGURE 7 -
1.0
\
\
/
II
0.6
I
e
J
~ 0 .•
\
,J
!
[""'.. ......
./
~ 0.2
r-
o
10
~
....1-"
.02
20
.05
0.1
0.2
0.5 1.0
IIoIIk
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-51
,.....
/~
~
1.0
I
100- .....
;
i:!i
-3.0
FALL TIME FACTOR
....
"
1.2
-0.5 -1.0
-1.5 -2.0 -2.5
VOl' BASE-EMITTER REVERSE BIAS (YOLTS)
RISE TIME FACTOR
:: 0 .•
1.6
1c
1o
+0.5
1\
1
IE
....
T,
~
~
V" THRESHOLD VOLTicE
j
1\
\
r
l'
100 200
10
2.0
....,
i
j 0.01
0.005
Ie. COLLECTOR CURRENT (mAde)
100oC_ I---
T,
•
'"
~
11500 C
I
~ 1.0
z
o
:: 4.0
T,
i
1
~ 5.0
~
~
ya;= +20 V
10.0
I-
;::
~
COMMON EMITTER DC LEAKAGE
CHARACTERISTICS
ACTIVE REGION TIME CONSTANT
2.0
5.0
10
20
•
2N260S
JAN, JTX AVAILABLE
CASE 26·03, STYLE 1
T0-46 (TO·206AB)
MAXIMUM RATINGS
Sym~1
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6
Vdc
Rating
Collector Current -
•
IC
30
mA
PD
400
2.28
mW
mWrC
TJ, Tstg
-65 to +200
·C
Continuous
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Operating and Storage Junction
Temperature Range
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to 2N3798 for graphs.
=
ELECTRICAL CHARACTERISTICS (TA
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
V(BR)CEO
45
-
Vdc
V~BR)CBO
60
-
Vdc
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
(lC
IC
=
(IE =
= 45 V)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB
Base-Emitter Short Circuit Current
Emitter Cutoff Current
(VBE
=
10 mA (Pulse)
10 pA)
10 pA)
(VCE
(VCE
6
-
Vdc
ICBO
-
10
nA
ICES
-
10
10
nA
pA
lEBO
-
2
nA
V(BR)EBO
= 45 V)
= 45 V, TA =
170'C)
= 5.0 V)
ON CHARACTERISTICS
DC Current Gain(1)
(VCE
(VCE
(VCE
(VCE
= 5.0 V, IC
= 5.0 V, IC
= 5.0 V,IC
= 5.0 V,IC
=
=
=
=
10 pA)
500 pA)
10 mAl
10 pA, TA
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
=
(lC
=
=
10 mA, IB
10 mA, IB
-
600
20
-
-
VCE(sat)
-
0.5
Vdc
VBE(sat)
0.7
0.9
Vdc
Cobo
-
6
pF
hie
-
200
hib
25
35
n
n
10
10-4
hFE
-55'C)
=
500 pA)
= 500 pA)
100
150
300
-
SMALL-SIGNAL CHARACTERISTICS
= 5.0 V, IE = 0, f = 1.0 MHz)
= 5.0 V, IC = 1.0 mA, f = 100 MHz)
Input Impedance (VCB = 5.0 V, IE = 1.0 mA, f = 1.0 kHz)
Voltage Feedback Ratio (VCB = 5.0 V, IE = 1.0 mA, f = 1.0 kHz)
Small-Signal Current Gain (VCB = 5.0 V, IE = 1.0 mA, f = 1.0 kHz)
(VCB = 5.0 V, IC = 500 pA, f = 30 MHz)
Output Admittance (VCB = 5.0 V, IE = 1.0 mA. f = 1.0 kHz)
Noise Figure(2) (VeB = 5.0 V, IC = 10 pA, Rg = 10 k n, BW = 15.7 kHz)
Output Capacitance
Input Impedance
(VCB
(VCE
hrb
-
hfe
150
1.0
hob
-
NF
-
(1) Pulse Width,.; 300 /los, Duty Cycle,.; 2.0%.
(2) Measured in amplifier with response down 3 dB at 10 Hz.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-52
600
-
-
1
/Iomho
3
dB
2N2639
thru
2N2644
MAXIMUM RATINGS
CASE 654-07, STYLE 1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
30
mAde
Collector Current -
Continuous
IC
One Die
Both Die
Total Device Dissipation @ TA = 25"C
Derate above 25"C
PD
300
1.72
600
3.43
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
600
3.43
1200
6.87
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
Emitter 3
5 Emitter
mW
mWrC
mW
DUAL
AMPLIFIER TRANSISTORS
..
mWrC
NPN SILICON
"C
Refer to 2N2913 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Characteristic
Symbol
Min
VCEO(sus)
45
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
(lC = 10 mAde, IB = 0)
Collector Cutoff Current
(VCE = 5.0 Vdc, IB = 0)
'CEO
Collector Cutoff Current
(VCB = 45 Vdc, 'E = 0)
(VCB = 45 Vdc, IE = 0, TA
'CBO
=
+ 150"C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
lEBO
-
-
0.010
-
0.010
10
-
0.010
Vdc
pAdc
pAdc
pAdc
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 10 pAdc. VCE
=
-
hFE
5.0 Vdc)
= 5.0 Vde, TA =
2N2639, 2N2640, 2N2641
2N2642, 2N2643, 2N2644
50
100
300
300
2N2639, 2N2640, 2N2641
2N2642,2N2643,2N2644
10
20
-
(lc
=
10 pAde, VCE
(lC
=
100 pAde, VCE
=
5.0 Vde)
2N2639. 2N2640, 2N2641
2N2642. 2N2643, 2N2644
55
110
(lC
=
1.0 mAde, VCE
= 5.0 Vde)
2N2639, 2N2640, 2N2641
2N2642, 2N2643, 2N2644
65
130
-55"C)
-
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
VCE(sat)
-
1.0
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 0.5 mAde)
VBE(sat)
0.6
1.0
Vde
IT
40
-
MHz
-
8.0
pF
hib
25
32
ohms
hrb
-
600
X 10-6
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vde, f
Output Capacitance
(VCB = 5.0 Vde, 'E
= 0, f =
=
20 MHz)
Cobo
1.0 MHz)
Input Impedance
(lC = 1.0 mAde, VCB
= 5.0 Vde, f =
1.0 kHz, 'E
=
-1.0 mAl
Voltage Feedback Ratio
(lC = 1.0 mAde, VCB
= 5.0 Vde, f =
1.0 kHz, 'E
=
-1.0 rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-53
2N2639 thru 2N2644
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Small-Signal Current Gain
(lC = 1.0 mAde, VCB = 5.0 Vde, f
Output Admittance
(lc = 1.0 mAde, VCB
Symbol
Min
Max
65
130
600
600
hfe
=
= 5.0 Vde, f =
2N2639, 2N2640, 2N2641
2N2642, 2N2643, 2N2644
1.0 kHz)
1.0 kHz, IE
=
hob
-1.0mA)
Noise Figure
(lC = 10 !LAde, VCB = 5.0 Vde,
RS = 10 kil, Bandwidth = 10 Hz to 15 kHz)
NF
Unit
-
-
1.0
I'mhos
4.0
dB
0.9
0.8
1.0
1.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 10 !LAde, VCE = 5.0 Vde)
Base-Emitter Voltage Differential
(lC = 10 !LAde, VCE = 5.0 Vde)
•
Base-Emitter Voltage Differential Gradient
(lC = 10 !LAde, VCE = 5.0 Vde, TA = -55 to +125°C)
-
hFE1/hFE2
2N2639, 2N2642
2N2640, 2N2643 .
IVBE1-VBE21
2N2639, 2N2642
i
2N2640, 2N2643
2N2639, 2N2642
2N2640, 2N2643
a(VBE1-VBE2)
aTA
-
(1) Pulse Test: Pulse Width .. 300 I'S, Duty Cycle" 2.0%.
(2) The lowest hFE reading is taken as hFEl for this test.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-54
mVde
5.0
10
I'vrc
10
20
2N2652,A
CASE 654·07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
Rating
VCEO
60
Vde
Collector-Base Voltage
VCBO
100
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
IC
500
mAde
Collector Current -
Continuous
Unit
One Die
Both Die
EmItter 3
Total Device Dissipation @ TA
Derate above 25'C
~
25'C
Po
0.3
1.72
0.6
3.43
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
Po
1.0
5.7
2.0
11.4
Watts
mWrC
Operating and Storage Junction
TJ, Tstg
-65 to +200
5 Emitter
DUAL
AMPLIFIER TRANSISTORS
NPN SILICON
'c
Temperature Range
Refer to 2N2060,A for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(lc
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VCB
(VBE
~
~
~
(lC
(IE
~
~
~
20 mAde, IB
100 pAde, IE
~
0)
0)
= 0, TA
~
5.0 Vde, IC
~
0)
= 0)
100 pAde, IC
50 Vde, IE
50 Vde, IE
~
V(BRICEO
60
-
V(BR)CBO
100
-
Vde
V(BR)EBO
7.0
-
Vde
-
ICBO
~
150'C)
2N2652
0)
lEBO
Vde
0.010
15
pAde
0.010
pAde
ON CHARACTERISTICS
DC Current Gain
(lC
(lC
(lC
~
~
~
100 pAde, VCE
1.0 mAde, VCE
1.0 mAde, VCE
~
~
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
~
(lC
5.0 Vde)
5.0 Vde)
5.0 Vde, TA
~
~
~
50 mAde, IB
~
5.0 mAde)
-
200
VCE(sat)
-
1.2
Vde
VBE(sat)
-
0.9
Vdc
60
-
MHz
-55'C)
50 mAde, IB = 5.0 mAde)
-
35
50
15
hFE
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
~
(VCB
(VBE
~
~
(lc = 50 mAde, VCE
10 Vde, IE
~
0, 0.5 Vde, IC
0, I
~
~
0, I
~
~
10 Vde, I
~
20 MHz)
1.0 MHz)
IT
15
pF
Cibo
-
85
pF
Cobo
1.0 MHz)
Input Impedance
(lc
1.0 mAde, VCE
~
5.0 Vde, 1= 1.0 kHz)
hie
1.0
10.5
kohms
Input Impedance
(lC = 1.0 mAde, VCB
~
5.0 Vde, I = 1.0 kHz)
hib
20
35
ohms
hie
50
300
-
hoe
-
50
/Lmhos
NF
-
8.0
dB
1.0
1.0
-
Small-Signal Current Gain
Output Admittance
(lC
~
1.0 mAde, VCE
~
5.0 Vde, I = 1.0 kHz)
(lC = 1.0 mAde, VCE = 5.0 Vde, 1= 1.0 kHz)
Noise Figure
(lC = 0.3 mAde, VCE = 10 Vde, RS
~
610 ohms, B. W. = 1.0 Hz, I = 1.0 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 100 pAde, VCE ~ 5.0 Vde)
(lC = 1.0 mAde, VCE ~ 5.0 Vde)
Base-Emitter Voltage Differential
2N2652
2N2652
(lc = 100 pAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vde)
Base-Emitter Voltage Differential Gradient
(lc ~ 100 pAde, VCE = 5.0 Vdc, TA = -55 to +125'C)
hFE1/hFE2
0.85
0.85
IVBE1-V BE21
a(VBE 1-VBE2)
aTA
(1) Pulse Test: Pulse Width", 300 ILS, Duty Cycle'" 2.0%.
(2) The lowest 01 the two hFE readings is taken as hFE1 lor the purpose 01 measurement.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-55
-
3.0
3.0
mVde
-
10
/LvrC
•
2N2721
CASE 654-07. STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vde
Collector-Base Voltage
VCBO
80
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
40
mAde
Rating
Collector Current -
•
Continuous
IC
One Die
Both Die
Emitter 3
5 Emitter
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
0.3
1.71
0.6
3.4
Watt
mWfC
DUAL
AMPLIFIER TRANSISTOR
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
0.6
3.4
1.2
6.8
Watt
mWfC
NPN SILICON
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
°c
Refer to 2N2060 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
60
-
Vde
OFF CHARACTERISTICS
(lC = 10 mAde, IB = 0)
= 5.0 Vde, IB = 0)
Collector Cutoff Current (VCB = 60 Vde, IE = 0)
(VCB = 60 Vde, IE = 0, TA = 150°C)
Emitter Cutoff Current (VEB = 5.0 Vde, IC = 0)
Collector-Emitter Breakdown Voltage(1)
Collector Cutoff Current
V(BR)CEO
(VCE
-
10
nAde
0.Q1
10
!LAde
lEBO
-
10
nAde
hFE
30
35
42
120
-
ICEO
ICBO
ON CHARACTERISTICS
DC Current Gain
(lC
(lC
(lC
=
=
=
= 5.0 Vde)
= 5.0 Vde)
= 5.0 Vde)
(lc = 10 mAde, IB = 1.0 mAde)
= 10 mAde, IB = 1.0 mAde)
100 !LAde, VCE
1.0 mAde, VCE
10 mAde, VCE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC
-
-
1.0
Vde
0.85
Vde
80
-
MHz
-
6.0
pF
hib
25
32
ohms
hrb
-
500
X 10-6
hfe
30
200
hob
-
1.0
VCE(sat)
VBElsatl
0.65
tr
SMALL-SIGNAL CHARACTERISTICS
= 10 mAde, VCE = 10 Vde, f = 20 MHz)
= 0, f = 1.0 MHz)
Input Impedance (IE = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
Voltage Feedback Ratio (IE = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
Small-Signal Current Gain (lC = 1.0 mAde, VCE = 5.0 Vde, f = 1.0 kHz)
Output Admittance (IE = 1.0 mAde, VCB = 5.0 Vde, f = 1.0 kHz)
Current-Gain -
Bandwidth Product
Output Capacitance
(VCB
=
(lC
5.0 Vde, IE
Cabo
"mhos
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 100 !LAde, VCE = 5.0 Vde)
hFE1/hFE2
Base-Emitter Voltage Differential
(lC = 100 !LAde, VCE = 5.0 Vde)
[VBE1-VBE2[
0.8
mVde
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 100 !LAde, VCE = 5.0 Vde, TA = -55 to +25°C)
(lc
=
100!LAde,VCE
=
5.0Vde, TA
=
1.0
10
mV
A(VBE1-VBE2)
+25to +125°C)
(1) Pulse Test: Pulse Width"" 300 /Ml, Duty Cycle"" 2.0%.
(2) The lower of the two hFE readings is taken as hFE1 for the purpose of measurement.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-56
-
1.6
-
2.0
2N2722
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
40
mAde
Rating
Collector Current -
Continuous
One Ole
Both Ole
Total Device Dissipation @ TA = 25"C
Derate above 25"C
PD
0.3
1.7
0.6
3.4
Watt
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
0.6
3.4
1.2
6.8
Watts
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
Emitter 3
5 Emitter
DUAL
AMPLIFIER TRANSISTOR
NPN SIUCON
"C
Refer to 2N2920 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CEO
45
V(BRiCBO
45
-
-
2.0
nAde
0.001
1.0
pAde
1.0
nAde
250
-
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
(lC = 10 mAde, IB = 0)
(lC = 10 pAde, IE = 0)
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA = 150"C)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
-
lEBO
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 pAde, VCE = 5.0 Vde)
(lC = 10 pAde, VCE = 5.0 Vde)
(lC = 0.1 mAde, VCE = 5.0 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
50
100
125
hFE
(lC = 10 mAde, IB = 0.5 mAde)
(lC = 10 mAde, IB = 0.5 mAde)
-
VCE(satl
VBE(sat)
0.65
IT
100
-
1.0
Vde
0.85
Vde
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Impedance
(IE = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
Voltage Feedback Ratio
(IE = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
Small-Signal Current Gain
Output Admittance
Noise Figure
(lC = 10 mAde, VCE = 10 Vde, I = 20 MHz)
(VCB = 5.0 Vde, IE = 0, I = 1.0 MHz)
(IE = 0.1 mAde, VCE = 5.0 Vde, I = 1.0 kHz)
(IE = 1.0 mAde, VCB = 5.0 Vde, I = 1.0 kHz)
(IC = 10 pAde, VCE = 5.0 Vde, RS = 10 k!l, f = 10 Hz to 15.7 kHz)
Cobo
-
6.0
pF
hib
25
32
ohms
X 10-6
hrb
-
600
hie
100
700
hob
-
1.0
p.mhos
NF
-
4.0
dB
-
-
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 1.0 pAde, VCE = 5.0 Vde)
hFE1/hFE2
0.9
1.0
Base-Emitter Voltage Differential
(lC = 10 pAde, VCE = 5.0 Vde)
IVBE1-VBE21
-
5.0
-
0.8
1.0
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 10 pAde, VCE = 5.0 Vde, TA = - 55 to + 25"C)
(lC = 10 pAde, VCE = 5.0 Vde, TA = +25 to +125"C)
mVde
=
t5 70
50 lelia
10..-
~I"::-
rrT I ,,.'"
30
+i
50
,
30
50
70
100
200
Ie II.
10
300
500
5.0 7.0
10
20
30
INPUT
l,=50n
PRF = 150 PPS
RISE TIME", 2.0 '"
200
i
50
J
VdE =12J
TJ= 25°C
..-
20
/"
~
~
~
'-'
~
a
37
lN916
-r-
I-
I---
70
I
~
~
50
TJ
--
r---..
10
"
20
V
.,!O
10
/
25°C
g.O
6.0
,
4.0
V
o1
~
Gib
<.5
30
•
-6.0
FIGURE 17 - CAPACITANCES
100
~
500
40
i5
~
300
TO OSCillOSCOPE
RISE TIME EO; 5.0 ns
FIGURE 16 - CURRENT-GAIN-BANDWIDTH PRODUCT
500
r-
200
1.0 k
50
200
100
1.0 k
TO OSCILLOSCOPE
RISE TIME", 5.0 ns
300
70
+15 V
1.0 k
~
50
FIGURE 15b - STORAGE AND FALL
TIME TEST CIRCUIT
-30
~
-
Ie. COLLECTOR CURRENT (mAl
FIGURE 15. - DELAY AND RISE
TIME TEST CIRCUIT
t;
,
.......
Ie. COLLECTOR CURRENT (mAl
INPUT
Zo=50n
PRF = 150 PPS
RISE TIME", 2.0 ns
20
20
10
20
_
~
II
10
-
IBI=I82
30
'r"
;e(l!, - 21
10
5.0 7.0
70
,t--.,
l-i"r
20
g
Vee~30V
.,
"-
~ 100
>=
~.i'
FIGURE 14 - FALL TIME
500
Cob
~
,.....
2.0
0.2 03
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30 50
01
Ie. COLLECTOR CURRENT (mAde)
0.2
0.5
1.0
20
5.0
REVERSE BIAS (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-69
10
20
40
2N2904, A THRU 2N2907, A, 2N3485, A, 2N3486, A
FIGURE 18 - ACTIVE REGION SAFE OPERATING AREAS
2.0
ii:
'"
~
a
'"
0
~
S
E
"-
1.0 ms"-
1.0
0.1
~
.... 0.5
10",,,This graph shows the maximum Ie-VeE limits of the device
both from the standpoint of thermal dissipation (at 2SoC case
-TO.l~P:
0.3 _TO-46
,
00",=
TO·5
,"
0.2
temperature), and secondary breakdown. For case temperatures
other than 2SoC, the thermal dissipation curve must be modified
I,
TJ = 200·C
.... ~
de
0.1 :::: - - - Second Breakdown limited
Pulse Duty Cycle'" 10%
0.07 - '
Bonding Wire Limited
0.05
- ----ThermaILimitations@TC"'250 C
Applicable
For Rated BVCEO
'0.03 0.02
2.0
3.0
5.0
1.0
10
20
=- --
in accordance with the derating factor in the Maximum Ratings
table.
To avoid possible device failure. the collector load line must
fall below the limits indicated by the applicable curve. Thus. for
certain operating conditions the device is thermally limited, and
for others it is limited by secondary breakdown.
For pulse applications, the maximum IC-VCE product indicated
by the dc thermal limits can be exceeded. Pulse thermal limits
may be calculated by using the transient thermal resistance curve
~
30
of Figure 19.
40
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 19 - THERMAL RESISTANCE
1.0
ffi
en
z
0.5
«
"'w
....
"
wZ
~~ 0.2
TO·5 PACKAG~
~fZ
u..a::: 0.1
w ....
V
.... -::::.
-
~
r8Jclt)= rlt)8JC
0«
w,"
~~·O.05
i~
o
Z
'"
0.02
TO-48
TO·18
~
0.01
10-4
100
10-2
t,TIMEls)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-70
2N2913
thru
2N2920
MAXIMUM RATINGS
Symbol
2N2913
thru
2N2918
Collector-Emitter Voltage
VCEO
45
Collector-Base Voltage
VCBO
45
Emitter-Base Voltage
VEBO
6.0
Vde
IC
30
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA= 25'C
Derate above 25'C
PD
Total Device Dissipation
@TC = 25'C
Derate above 25'C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
2N2919
2N2920
Unit
60
Vde
60
Vde
JAN, JTX, JTXV, JANS AVAILABLE
CASE 654-07, STYLE 1
One Die
Both Die
300
1.7
500
2.86
mWf'C
750
4.3
1500
8.6
mWf'C
DUAL
AMPLIFIER TRANSISTORS
'c
NPN SILICON
mW
mW
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Symbol
Emitter 3
Typ
Max
-
-
45
60
-
V(BR)EBO
6.0
-
-
ICEO
-
-
-
-
2N2913,15,17,19,
2N2914,16,18,20
60
150
-
240
600
2N2913,15,17,19,
2N2914, 16,18,
2N2920
15
30
40
-
-
(lC = 100 !lAde, VCE = 5.0 Vde)
2N2913,15,17,19,
2N2914, 16, 18,20
100
225
(lC = 1.0 mAde, VCE = 5.0 Vde)
2N2913,15,17,19,
2N2914,16,18,20
150
300
Characteristic
Min
5 Emitter
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CEO(sus)
2N2913 thru 18,
2N2919, 2N2920
V(BR)CBO
2N2913 thru 18,
2N2919, 2N2920
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current
(VCE = 5.0 Vde, IB = 0)
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
45
60
ICBO
2N2913 thru 18,
2N2919, 2N2920
(VCB = 45 Vde, IE = 0, TA = 150'C)
-
All Types
Emitter Cutoff Current
(VEB = 5.0 Vde, IC = 0)
lEBO
-
Vde
Vde
0.002
Vde
!lAde
!lAde
0.010
0.002
10
0.002
!lAde
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 10 !lAde, VCE = 5.0 Vde)
(lC = 10 !lAde, VCE = 5.0 Vde, TA = - 55'C)
hFE
Collector-Emitter Saturation Voltage
(lC = 1.0 mAde, IB = 0.1 mAde)
VCE(sat)
Base-Emitter On Voltage
(lC = 100 !lAde, VCE = 5.0 Vde)
VBE(on)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 500 !lAde, VCE = 5.0 Vde, f = 20 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-71
-
-
-
-
-
-
0.35
Vde
-
0.7
Vde
•
2N2913 thru 2N2920
ELECTRICAL CHARACTERISTICS (continued) (TA -- 25°C unless otherwise noted)
Symbol
Characteristic
Output Capacitance
(VCB = 5.0 Vde, IE = 0, I = 140 kHz)
Min
Typ
Cobo
Max
6.0
Unit
4.0
pF
Input Impedance
(lC = 1.0 mAde, VCB = 5.0 Vde, 1= 1.0 kHz)
hib
25
28
32
ohms
Output Admittance
(lC = 1.0 mAde, VCB = 5.0 Vde, 1= 1.0 kHz)
hob
-
-
1.0
/Lmhos
-
2.0
3.0
3.0
4.0
2.0
3.0
3.0
4.0
NF
Noise Figure
(lC = 10 !LAde, VCE = 5.0 Vde, RS = 10 kil,
1= 1.0 kHz, BW = 200 Hz)
2N2914,16,18,20,
2N2913,15,17,19
(lc = 10 !LAde, VCE = 5.0 Vde, RS = 10 kG,
1= 10 Hz to 15.7 kHz, BW = 10 kHz)
2N2914,16,18,20,
2N2913,15,17,19
dB
-
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 100 !LAde, VCE = 5.0 Vde)
•
hFE1/hFE2
Base-Emitter Voltage Differential
(lC = 10 !LAde to 1.0 mAde, VCE = 5.0 Vdc)
IVBE1-VBE21
(lC = 100 !LAde, VCE = 5.0 Vde)
2N2917,18,
2N2915,16,19,20
-
2N2917,18,
2N2915,16,19,20
-
-
-
-
Base·Emitter Voltage Differential Change Due to Temperature
(lC = 100 !LAde, VCE = 5.0 Vdc,
2N2917,18,
TA = -55°C to +25°C)
2N2915,16,19,20
-
1.0
1.0
mVde
10
5.0
5.0
3.0
mVdc
:>
>
0.2
0.2
VCE(Sal) @ IdlB
10
VCE(sal) @ IdlB = 10
o
0,01
o
0.1
1.0
10
IC, COLLECTOR CURRENT (MA)
100
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (MA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-72
100
2N2945
2N2946
MAXIMUM RATINGS
Symbol
2N2945
2N2946
Unit
Emitter-Collector Voltage
Rating
VECO
20
35
Vdc
Collector-Base Voltage
VCBO
25
40
Vdc
Emitter-Base Voltage
VEBO
25
40
Collector Current -
Continuous
Vdc
IC
100
Adc
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
400
2.3
mW
mW/oC
Total Device Dissipation Co! TC
Derate above 25°C
=
PD
2.0
11.43
Watts
mW/oC
TJ, Tstg
-65 to +200
°c
25°C
Operating and Storage Junction
Temperature Range
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
ROJC
87.5
°CIW
Thermal Resistance, Junction to Ambient
R8JA
435
°CIW
TRANSISTORS
PNP SILICON
Refer to 2N2944A for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
ICBO
2N2945
2N2946
Emitter Cutoff Current
(VEB = 25 Vdc, IC = 0)
(VEB = 40 Vdc, IC = 0)
lEBO
2N2945
2N2946
nAdc
-
-
-
-
0.2
0.5
-
-
0.2
0.5
40
30
160
130
-
4.0
3.0
17
15
-
nAdc
-
-
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAdc, VCE
hFE
= 0.5 Vdc)
2N2945
2N2946
"DC Current Gain (Inverted Connection)
(lB = 200 p.Adc, VEC = 0.5 Vdc)
Offset Voltage
(lB = 200 /LAdc, IE
VEC(ofs)
-
-
hFE(inv)
2N2945
2N2946
-
mVdc
= 0)
2N2945
2N2946
-
-
0.23
0.27
0.5
0.8
(lB
=
1.0 mAdc,lE
= 0)
2N2945
2N2946
-
0.5
0.6
1.0
2.0
(lB
=
2.0 mAdc, IE
= 0)
2N2945
2N2946
-
0.9
1.0
1.6
2.5
5.0
3.0
13
12
-
-
3.2
10
1.9
6.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAdc, VCE = 6.0 Vdc, f
=
IT
1.0 MHz)
2N2945
2N2946
= 6.0 Vdc, IE = 0, f = 500 kHz)
= 6.0 Vdc, IC = 0, f = 500 kHz)
Output Capacitance (VCB
Cobo
Input Capacitance (VEB
Cibo
"ON" Series Resistance
(lB = 1.0 mAdc, IE = 0, Ic
=
100 ILArms, f
=
rec
1.0 kHz)
2N2945
2N2946
-
pF
pF
Ohms
4.5
5.0
"Indicates Data in addition to JEDEC Requirements.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-73
MHz
-
35
45
•
2N2945A
2N2946A
MAXIMUM RATINGS
Symbol 2N2945A 2N2946A
Unit
VECO
20
35
Vdc
Collector-Base Voltage
VCBO
25
40
Vdc
Emitter-Base Voltage
VEBO
25
Rating
Emitter-Collector Voltage
Collector Current -
Continuous
40
Vdc
IC
100
mAde
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
PD
400
2.3
mW
mWfC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
2.0
11.43
Watts
mWfC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
°c
Lead Temperature
1/16" from Case for 10 seconds
TL
240
°c
JAN, JTX, JTXV AVAILABLE
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
THERMAL CHARACTERISTICS
•
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
R6JC
435
°CIW
Thermal Resistance, Junction to Ambient
R6JA
87.5
°CIW
ELECTRICAL CHARACTERISTICS (TA
CHOPPER TRANSISTORS
PNP SILICON
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
(IE = 10 !LAde, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
(VCB = 25 Vdc, IE = 0, TA
(VCB = 40 Vdc, IE = 0, TA
Emitter Cutoff Current
(VEB = 25 Vdc, IC =
(VEB = 40 Vdc, IC =
(VEB = 25 Vdc, IC =
(VEB = 40 Vdc, IC =
ICBO
=
=
100°C)
100°C)
2N2945A
2N2946A
2N2945A
2N2946A
=
=
100°C)
100°C)
20
35
-
-
-
-
-
-
-
-
-
lEBO
0)
0)
0, TA
0, TA
Vdc
V(BR)ECO
2N2945A
2N2946A
2N2945A
2N2946A
2N2945A
2N2946A
-
nAdc
-
0.2
0.5
20
25
nAdc
0.2
0.5
15
20
-
-
-
-
70
50
200
200
-
30
20
32
25
-
-
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE
hFE
=
0.5 Vdc)
DC Current Gain (Inverted Connection)
(lB = 200 /LAde, VEC = 0.5 Vdc)
Offset Voltage
(lB = 200 !LAde, IE
(lB = 1.0 mAde, IE
(lB = 2.0 mAde, IE
=
2N2945A
2N2946A
VEC(ofs)
0)
=
0)
=
0)
mVdc
2N2945A
2N2946A
2N2945A
2N2946A
-
-
0.4
0.7
0.5
0.6
0.5
0.8
1.0
2.0
2N2945A
2N2946A
-
0.9
1.0
1.5
2.5
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-74
-
hFE(inv)
2N2945A
2N2946A
-
2N2945A,2N2946A
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAdc, VCE = 6.0 Vdc, f
=
1.0 MHz)
Output Capacitance
(VCB = 6.0 Vdc, IE
= 0, f = 0.1
MHz to 1.0 MHz)
Input Capacitance
(VEB = 6.0 Vdc, IC
= 0, f = 0.1
MHz to 1.0 MHz)
"ON" Series Resistance
(lB = 1.0 mAdc, IE = 0, Ie
=
100 pArms, f
FIGURE 1 -
=
IT
2N2945A
2N2946A
15
8.0
Cobo
-
3.2
10
pF
Cibo
-
1.9
6.0
pF
-
5.0
7.0
6.0
8.0
-
Ohms
rac(on)
2N2945A
2N2946A
1.0 kHz)
MHz
-
10
5.0
VEC(on)
AGURE 2 -
VEC(offset)
1.0Vac
1.0 kHz
1.0 k
•
OUTPUT
9.1 k
rnA
+ + + + + -
10 k
2%
Output
rnA
1.0k
2% V
-
-
-
-
9.1 k
Figure 1 - rec(on)
2%
rec(on)
1.0 Vac
Tec(on)
Output measured with H.P. 4000
Ac VTVM or equivalent
1.0 mV 0 1.0 II rec(on)
ICBO versus TA
hFE versus IC
650
c
600
ffi
550
!i
TA
0
25°C
1111 II
~
V
V
1
g§
tl
tt:
30
0
f2 250
~ 20 0
1500
AI
1. 0
§
400
_ 35 0
1
~
~10. 0
"
450
A~
i
VCP 10V
'" 50 0
~
I
IIII II I
100
~
'" O. 1=--
ti
c
-25V
'": 0.0 1==1 15V
~VCEo05V
nlll0.1 II II IIIII
-NOTE:
PULSE WIDTH 0 300 1".
DUTY CYCLE,. 2%
1.0
10.0
Ie COLLECTOR CURRENT (mA)
-40~¥/
~
~
VCE-l.0V
~
~
0.00 1
o
100.0
20
40
60
80
100 120 140
TA - AMBIENT TEMPERATURE (0G)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-75
160
180
200
2N2945A, 2N2946A
vCE(sl versus IC
lebo versus TA
100
200
110
!ii
~
B
:t
~
0
0
"/
O. 1
0
1-40V H
1 -25'V I
0
1--15 V
0
20
+125°C
0
H'
0.00 10
40
60
80
100
120
140
160
180
1111Jl..o
II
0
0.01
200
0.1
NOTE:
PULSE WIOTH = 300 1".
DUTY CYCLE";; 2%
TA - AMBIENT TEMPERATURE (OCI
•
-55°C
0
19'"/
Ai'V
1.0
I III
IC
18o Ib = 10
0 NOTE
.4
.&.
"
"'"
0.4
0
J2~ocl
0.6
~
0
5Jo/
>
:il
Cibo versus VEB
J
0.8
'"t3
100.0
111
~
w
~lli
10.0
Ie COLLECTOR CURRENT (rnA)
VBE(onl versus IC
1.0
1.0
~
-
i"I
0
t±±I
~
II I
'\
0
0
+125°C
15
0
I"
0
0
o
0.1
0.01
1.0
10.0
IC - COLLECTOR CURRENT (rnA)
0
-0.1
100.0
-0.5 -1.0
-5.0 -10
VES. EMInER·BASE VOLTAGE (V)
Cabo versus VCB
-50
rec(onl versus IB
20
I, 100 ~A'
1[=0
f 1.0 kHz
=
18
t:
a
16
=
"'~ !14
0.. '"
~ ~ 12
~ 10
~
~
58.0
"'
6.0
o
c:g
\
,
f
4.0
r--
2.0
o
-0.1
-0.5
-1.0
-5.0 -10.0
Vcs. COLLECTOR·BASE VOLTAGE (V)
0
-0.01
-50.0
"
-0.1
-1.0
-10.0
lB. BASE CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-76
-100.0
2N2945A,2N2946A
VEC(ofs} versus 18
0
hFE versus T A
800
1/
1[=0
9 TA = 25°C
'"
~
'"~ 600
8
7
II
6
~
>-z
5
g§ 400
IC = 1.0 mA
13
IC=O.I mA
~
3
'"~ 200
iZ
0
-0.01
IC= 100 mA
~
I
-0.1
-1.0
Is. BASE CURRENT (mAl
-10.0
0
-100.0
-55
75
0
25
50
TA. AMBIENT TEMPERATURE (OC)
-25
VCE = 0.5 V
NOTE
0
~
0
0
0
0
J
2Joci
TIl
:.-~
0
0
001
NOTE:
PULSE WIDTH = 300 1".
DUTY CYCLE';; 2%
~
-rnI I
~
N
II
0.1
10
100
'IC. COLLECTOR CURRENT (mAl
1000
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-77
125
•
hFE(inv) versus IC
20 0
180
100
2N3011
CASE 22-03, STYLE 1
TO-18 (TO-206AAI
MAXIMUM RATINGS
Rating
Value
VCEO
12
Vde
Collector-Emitter Voltage
VCES
30
'Vde
Collector-Base Voltage
VCBO
30
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
500
mAde
Collector Current - Continuous
Peak (10 p.S Pulse)
•
Unit
Symbol
Collector-Emitter Voltage(l)
3
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
0.36
2.06
Watt
mWrC
Total Device Dissipation @ TC
TC
Derate above 25°C
= 25°C
= 100°C
Po
1.20
0.68
6.85
Watts
mwrc
TJ, Tstg
-65 to +200
'c
Operating and Storage Junction
Temperature Range
II .:~2
1
1 Emitter
SWITCHING TRANSISTOR
NPNSILICON
Refer to 2N2368 for graphs,
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted,)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
(lC
(IE
(lC
(lC
=
=
=
=
10 mAde, IB
10 pAde, VBE
10 pAde, IE
100 pAde, IC
= 0)
= 0)
= 20 Vde VBE = 0)
= 20 Vde, VBE = 0, TA =
= 20 Vde, VBE = 0)
(VCE
(VCE
(VCE
= 0)
= 0)
V(BR)CEO
12
V(BR)CES
30
V(BRICBO
30
-
V(BR)EBO
5.0
-
Vde
0.4
10
pAde
0.4
pAde
120
-
ICES
+ 85·C)
IBL
-
Vde
Vde
Vde
ON CHARACTERISTICS (2)
DC Cllrrent Gain
(lC
(lC
(lc
Collector-Emitter Saturation Voltage
(lC
(lC
(lC
(lC
Base-Emitter Saturation Voltage
(lC
(lc
(lC
= 10 mAde, VCE = 0.35 Vde)
= 30 mAde, VCE = 0.4 Vde)
= 100 mAde, VCE = 1.0 Vde)
= 10 mAde, Is = 1.0 mAde)
= 30 mAde, IB = 3.0 mAde)
= 100 mAde, IB = 10 mAde)
= 10 mAde, IB = 1.0 mAde, TA =
= 10 mAde, IB = 1.0 mAde)
= 30 mAde, IB = 3.0 mAde)
= 100 mAde, IB = 10 mAde)
hFE
VCE(sat)
+85°C)
VBE(sat)
30
25
12
0.72
-
-
0.20
0.25
0.50
0.30
Vde
0.87
1.15
1.60
Vde
13
ns
15
ns
20
ns
SMALL-5IGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
(VCS
=
(lC
5.0 Vde, IE
= 20 mAde, VCE =
= 0, f = 140 kHz)
10 Vde, f
=
100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(lC = ISl = -IB2
toff
-
10 mAde)
Turn-On Time
(VCC = 2.0 Vde, VES(off) = 0, IC
Turn-Off Time
(VCC = 2.0 Vde, IC
ton
-
ts
=
= 30 mAde, ISl = 3.0 mAde)
= 30 mAde, IBl =
-IB2 = 3.0 mAde)
(1) Applicable from 0.01 mA to 10 mA (Pulsed).
(2) Pulse Test: Pulse Length = 30 p.s, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-78
2N3012
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
~
MAXIMUM RATINGS
3 Collector
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
200
mAde
,II ~~~,
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
0.36
2.06
Watts
mWrC
SWITCHING TRANSISTOR
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
1.2
6.85
Watts
mWrC
PNP SILICON
TJ, Tstg
-65 to +200
"C
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
Refer to 2N869A for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
V(BR)CES
12
-
Vde
VCEO(sus)
12
-
Vde
V(BR)CBO
12
-
Vde
V(BR)EBO
4.0
-
Vde
ICES
-
80
5.0
",Ade
30
".Ade
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(VCE
=
10 ",Ade, VBE
=
10 ",Ade, IE
100 ".Ade, IC
=
0)
Open Base)
= 0)
= 0)
= 6.0 Vde, VBE = 0)
= 6.0 Vde, VBE = 0, TA =
= 6.0 Vde, VBE = 0)
Collector Cutoff Current
Base Current
(lC
(IE
=
(lC = 10 mAde, IB = 0)
(Emitter-Base Termination -
(VCE
(VCE
+ 85"C)
IB
-
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAde, VCE = 0.3 Vde)
(lC = 30 mAde, VeE = 0.5 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)(1)
hFE
25
30
20
Collector-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 30 mAde, IB = 3.0 mAde)
(lC = 30 mAde, IB = 3.0 mAde, TA = + 85"C)
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 30 mAde, IB = 3.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
VBE(sat)
-
-
120
Vde
-
-
0.15
0.2
0.4
0.5
Vde
0.78
0.85
-
0.98
1.2
1.7
Cabo
-
6.0
pF
eibo
-
6.0
pF
4.0
-
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VEB = 0.5 Vde, IC
= 0, f =
140 kHz)
Small-Signal Current Gain
(lC = 30 mAde, VeE = 10 Vde, f
=
hfe
100 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 2.0 Vde, IC=30 mAde, IB1=1.5 mAde)
Turn-Off Time
(VCC = 2.0 Vde, IC=30 mAde, IB1 = IB2=1.5 mAde)
(1) Pulse Test: Pulse Width
= 300 J!.S, Duty Cycle = 1.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-79
..
2N3013
2N3014
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage(1)
2N3013
2N3014
Unit
JAN, JTX AVAILABLE
CASE 27-02, STYLE 1
TO-52 (TO-206AC)
Vde
15
20
!I
Collector-Emitter Voltage
VCES
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
500
mAde
Po
0.36
2.06
Watt
mWrC
Po
1.20
0.68
6.85
Watts
Watt
mWrC
SWITCHING TRANSISTORS
-65 to +200
°c
NPNSILICON
Collector Current - Continuous
(10 pS pulse) Peak
•
Value
VCEO
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Total Device Dissipation @ TC
@TC
Derate above 25°C
= 25°C
= 100°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
3
2
~~''"".'
1 Emitter
1
(1) Applicable from 0.01 mA to 10 mA (Pulsed)
Refer to 2N3648 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)CES
40
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 !JAde, VBE = 0)
Collector-Emitter Sustaining Voltage(2)
(lC = 10 mAde, IB = 0)
VCEO(sus)
2N3013
2N3014
15
20
Collector-Base Breakdown Voltage
(lC = 100 !JAde, IE = 0)
V(BR)CBO
40
Emitter-Base Breakdown Voltage
(IE = 100 !JAde, IC = 0)
V(BR)EBO
5.0
Collector Cutoff Current
(VCE = 20 Vde, VBE = 0)
(VCE = 20 Vde, VBE = 0, TA
Base Current
(VCE = 20 Vde, VBE
ICES
=
+ 125°C)
IB
-
-
-
Vde
Vde
-.
-
-
Vde
Vde
!JAde
0.3
40
-
0.3
30
25
25
15
25
12
120
!JAde
= 0)
ON CHARACTERISnCS(2)
DC Current Gain
(lC = 30 mAde, VCE = 0.4 Vde)
(lC = 100 mAde, VCE = 0.5 Vde)
(lC = 10 mAde, VCE = 0.4 Vde)
(lC = 300 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 30 mAde, VCE = 0.4 Vde, TA
Collector-Emitter Saturation Voltage
(lC = 30 mAde, IB = 3.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
(lC = 100 mAde, IB = 10 mAde)
(lC = 300 mAde, IB = 30 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
(IC = 30 mAde, IB = 3.0 mAde, TA
Base-Emitter Saturation Voltage
(lC = 30 mAde, IB = 3.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
(lC = 300 mAde, IB = 30 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
-
hFE
2N3013
2N3014
2N3013
2N3014
=
-55°C)
VCE(sat)
2N3013
2N3014
2N3013
2N3014
=
-
+125°C)
-
Vde
0.18
0.28
0.35
0.50
0.18
0.25
Vde
VBE(sat)
0.75
2N3013
2N3014
-
0.70
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-80
0.95
1.20
1.70
0.80
2N3013, 2N3014
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
tr
350
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 30 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VSE = 0.5 Vde, IC
= 0, f =
140 kHz)
Cibo
-
ts
-
Cabo
5.0
pF
8.0
pF
18
ns
SWITCHING CHARACTERISTICS
Storage Time
(lC = lSI = IS2
=
10 mAde)
Turn-On Time
(VEB(off) = 5.0 V, VCC
(VES(off)
=
15 V, IC
= 0, VCC = 2.0 V,
IC
= 30
Turn-Off Time
(VCC = 15 V, IC = 300 mAde, lSI
(VCC = 2.0 V, IC = 30 mAde, lSI
(2) Pulse Test: Pulse Width
= 300 mAde, IBI = 30 mAde)
= 300 p.s,
mAde, lSI
= IS2 = 30
= IS2 = 3.0
= 3.0
2N3013
mAde)
2N3014
toff
mAde)
mAde)
2N3013
2N3014
ns
ton
-
15
-
16
-
25
25
Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-81
ns
•
2N3019
2N3020
MAXIMUM RATINGS
Symbol
2N3019
2N3020
2N3700
Unit
Collector-Emitter Voltage
VCEO
80
80
Vde
Collector-Base Voltage
VCBO
140
140
Vde
Emitter-Base Voltage
VEBO
7.0
7.0
Vde
IC
1.0
1.0
Ade
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
0.8
4.6
0.5
2.85
Watts
mWrC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
5.0
28.6
1.8
10.6
Watts
mWrC
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
·C
JAN, JTX, JTXV
AVAILABLE
3 Collector
~~t
1 Emitter
2N3700
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
THERMAL CHARACTERISTICS
•
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Symbol
2N3019
2N3020
2N3700
Unit
Thermal Resistance, Junction to Case
RflJC
16.5
70
Thermal Resistance, Junction to Ambient
RflJA
89.5
245
'crw
'crw
Characteristic
3
2
1
GENERAL TRANSISTORS
NPNSIUCON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(lC = 30 mAde, IB = 0)
V(BR)CEO
80
-
Vde
Collector-Base Breakdown Voltage
(IC = 100 pAde, IE = 0)
V(BR)CBO
140
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
7.0
-
Vde
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 90 Vde, IE = 0)
(VCB = 90 Vde, IE = 0, TA
ICBO
=
+ 150'C)
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 0)
lEBO
pAde
-
-
0.D1
10
-
0.010
pAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 0.1 mAde, VCE
(lC
(lC
=
=
10 mAde, VCE
hFE
=
=
150 mAde, VCE
10 Vde)
10 Vde)
=
(lC
= 150 mAde, VCE =
(lC
= 500 mAde, VCE =
(lC
=
1.0 Ade, VCE
=
10 Vde)
10 Vde, TC
=
-55'C)
10 Vde)
10 Vdc)
50
30
2N3700, 2N3019
2N3020
40
120
2N3700. 2N3019
2N3020
100
300
120
2N3700, 2N3019
40
2N3700, 2N3019
2N3020
50
30
100
15
-
90
40
All Types
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
2N3020
2N3019, 2N3700
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-82
-
100
-
-
Vdc
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
-
2N3700, 2N3019
2N3020
0.2
0.5
1.1
Vdc
2N3019,2N3020,2N3700
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Output Capacitance
(VCB = 10 Vdc, IE = 0, I = 1.0 MHz)
Cobo
-
12
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, I = 1.0 MHz)
Cibo
-
60
pF
80
30
400
200
Small-Signal Current Gain
(IC = 1.0 mAde, VCE = 5.0 Vdc, 1= 1.0 kHz)
-
hie
2N3700, 2N3019
2N3020
rb'C c
Collector Base Time Constant
(IE = 10 mAde, VCB = 10 Vdc, I = 79.8 MHz)
NF
Noise Figure
(lC = 100 /lAde, VCE = 10 Vdc,
RS = 1.0 k ohms, 1= 1.0 kHz)
ps
15
-
2N3019, 2N3020
2N3700
2N3019,
2N3700
400
400
4
dB
(1) Pulse Test: Pulse Width", 300 ,,"", Duty Cycle'" 1.0%.
DC CURRENT GAIN
2N3019,2N3700
•
DC CURRENT GAIN
2N3020
z
<
'"
!Z
°E
~
TJ = 150°C
I I I IIII
TJ - 25°C
5r---TJ
a
......
u
c
5l
~
-55°C
~
1.
TJ = 150°C
OF TJ = 25°C
O. 5f= TJ = -55°C
z
~
O. 1
0.5 1.0
10
100
Ie. COLLECTOR CURRENT (mA)
O. 1'--
1000
0.5
1.0
CAPACITANCE
1.4
1. 2
0
z
0
55.
11:
-
Cib
in
1.0
!:l
~ O. Sf-~
'"~
~
Cob
5
-
VUE(sat) IC -10
IU
VUE(on) for VCE = 1.0 V
O. 6
111111111
> 0.4
VCE(.at)
u
O. 2
1.0
1000
"ON" VOLTAGES
100
'"~10.0
10
100
Ie. COLLECTOR CURRENT (mA)
0.1
1.0
VR, REVERSE VOLTAGE (V)
o
10
0.1
j,,;
Umltr"
1.0
10
100
Ie. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-83
IC
IB
= 10
1000
2N3019, 2N3020, 2N3700
TEMPERATURE COEFFICIENTS
if
I +25°C~0 +150°C
II IIIII II
1.6
:;;
.5
(-550/;'\'0 25°q
l-
e;
O.8
<:;
FREQUENCY EFFECTS
u:
ttl
~ 6.0
IIVC FOR VCE( ••,)
8
0
-55°C TO
8
a:
~ 4.0
+2~~b
6
+25°00 +150°C
a
II II IIIII I
'"
1.0
r..
~ 2.0
II II IIIII I
0.5
RS = 4.3 k!l
IC = 10 I'A
u:
IIVBB FOR VBE
10.0
50 100
IC. COLLECTOR CURRENT (rnA)
R, = 1.0"i:i1
IC= 100 I'A
500 1000
0.1
1.0
10
f. FREOUENGY (kHz)
100
CURRENT GAIN BANDWIDTH PRODUCT versus
COLLECTOR CURRENT - 1 kHz lite
•
SOURCE RESISTANCE EFFECTS
14.0
fLU!~z
12.0
"\
2N3019
2N3700
100
VCE= lOV
TA = 25°C
I--- 1-2N3020
~ 10.0
~
=>
to
IC= 100 I'A
r-..
8.0
u:
!!J
c
6.0
z
~ 4.0
MtO°ri
2.0
o
0.1
~IIIIIIIII
1.0
10.0
100.0
1000.0
RS. SOURCE RESISTANCE (k OHMS)
CURRENT GAIN -
o
1.0
IC COLLECTOR CURRENT (rnA de)
0.1
10
ACTIVE REGION SAFE OPERATING AREA
BANDWIDTH PRODUCT
1000
5.0rn~=
200
f--
£"
N
LOrnSm
5001"
;[
..!"
40
de TO·18
10
de TO·39
0.1
0.0 1
1.0
10
100
1(;. COLLECTOR CURRENT (M.A.O.C.)
1.0 V
10 V
VCE. COLLECTOR·EMITTER VOLTAGE (V)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-84
100 V
2N3043
thru
2N3045
2N3048
MAXIMUM RATINGS
CASE 610A-04, STYLE 1
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
45
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
30
mAde
Collector Current -
Continuous
One Die
Both Die
~
25'C
Po
250
1.67
350
2.33
mWrC
Total Device Dissipation @ TC
Derate above 25'C
~
25'C
Po
0.7
4.67
1.4
9.33
mWrC
TJ, Tstg
ELECTRICAL CHARACTERISTICS
-65 to +200
7 Collector
~~,~.Emitter 2
Total Device Dissipation @ TA
Derate above 25'C
Operating and Storage Junction
Temperature Range
Collector 9
4 Emitter
mW
Watts
DUAL
AMPLIFIER TRANSISTORS
NPN SIUCON
'c
(TA ~ 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
45
-
Vdc
Emitter-Base Breakdown Voltage
(IE ~ 10 pAdc, IC ~ 0)
V(BR)EBO
5.0
-
Vdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 45 Vdc, IE ~ 0)
(VCB ~ 45 Vdc, IE ~ 0, TA ~ + 150'C)
ICBO
Emitter Cutoff Current
(VEB ~ 4.0 Vdc, IC ~ 0)
lEBO
pAdc
-
0.010
10
-
0.010
2N3043, 2N3044, 2N3045
2N3048
100
50
300
200
2N3043, 2N3044, 2N3045
2N304B
130
65
-
pAdc
ON CHARACTERISTICS
DC Current Gain(l)
(lc ~ 10 pAdc, VCE ~ 5.0 Vdc)
(lc
~
1.0 mAde, VCE
~
-
hFE
5.0 Vdc)
Collector-Emitter Saturation Voltage
(lC ~ 10 mAde, IB ~ 0.5 mAde)
Base-Emitter On Voltage
(lC ~ 10 mAde, VCE ~ 5.0 Vdc)
-
VCE(sat)
-
1.0
Vdc
VBE
0.6
0.8
Vdc
t,-
30
-
MHz
-
8.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC ~ 1.0 mAde, VCE ~ 5.0 Vdc, f
~
20 MHz)
Output Capacitance
(VCB ~ 5.0 Vdc, IE ~ 0, f ~ 1.0 MHz)
Input Impedance
(lC ~ 1.0mAdc,VCE
Cobo
Ohms
hie
~
5.0Vdc,f
~
1.0 kHz)
2N3043, 2N3044, 2N3045
2N3048
Small-Signal Current Gain
(lC ~ 1.0 mAde, VCE ~ 5.0 Vdc, f
~
1.0 kHz)
2N3043, 2N3044, 2N3045
2N3048
3.2k
1.6k
19k
13k
130
65
600
400
-
100
70
-
5.0
hoe
Noise Figure
(lC ~ 10 pAdc, VCE ~ 5.0 Vdc, RS ~ 10 kohms, Bandwidth ~ 10 Hz to 15.7 kHz)
NF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-85
----
-
hfe
Output Admittance
(lC ~ 1.0 mAde, VCE ~ 5.0 Vdc, f ~ 1.0 kHz)
--------
pF
/Lmhos
dB
•
2N3043 thru 2N3045, 2N3048
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
0.9
0.8
1.0
1.0
-
5.0
10
Unit
MATCHING CHARACTERISTICS
DC Current Gain Ratio(2)
(lC = 10 pAdc, VCE = 5.0 Vdc)
Base-Emi!ter Voltage Differential
(lC = 10 pAdc, VCE = 5.0 Vdc)
Base-Emitter Voliage Differential Temperature Gradi''"t
(IC = 10 pAdc, VCE = 5.0 Vdc, TA = - 55 to + 125°C)
hFE1/hFE2
2N3043
2N3044
IVBE1-VBE21
2N3043
2N3044
A(VBE1-VBE2)
ATA
2N3043
2N3044
mVdc
-
(1) Pulse Test: Pulse Width", 300 /J-S, Duty Cycle'" 2.0%.
(2) The lowest hFE readi~g is taken as hFE1 for this test.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-86
-
,.VI"C
10
20
2N3053,A
MAXIMUM RATINGS
Rating
Symbol
ZN3053 ZN3053A
Unit
Collector-Emitter Voltage(1)
VCEO
40
60
Vde
Collector-Base Voltage
VCBO
60
80
Vde
Emitter-Base Voltage
VEBO
5.0
Collector Current -
Continuous
Total Device Dissipation @ T C
Derate above 25'C
=
25'C
Operating and Storage Junction
Temperature Range
Lead Temperature 1'16", ± 1'32" From
Case for 10 s
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Vde
IC
700
mAde
PD
5.0
28.6
Watts
mWrC
TJ. Tstg
-65 to +200
·C
TL
+235
·C
THERMAL CHARACTERISTICS
Characteristic
GENERAL PURPOSE
TRANSISTORS
Thermal Resistance, Junction to Case
(1) Applicable 0 to 100 mA (Pulsed):
NPN SIUCON
Pulse Width", 300 ,..sec., Duty Cycle", 2.0%.
10 /Lsee., Duty Cycle'" 2.0%.
o to 700 mA; Pulse Width",
Refer to ZN3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISnCS
Collector-Emitter Breakdown Voltage(2)
(lC = 100 !LAde, IB = 0)
V(BR)CEO
2N3053
2N3053A
Collector-Emitter Breakdown Voltage(2)
(lC = 100 mAde, RBE = 10 ohms)
V(BR)CER
2N3053
2N3053A
Collector-Base Breakdown Voltage
(lc = 100 !LAde, IE = 0)
Emitter-Base Breakdown Voltage
Collector Cutoff Cu rrent
(VCE = 30 Vde, VBE(off)
(VCE = 60 Vde, VBE(off)
=
=
=
(IE
100 !LAde, IC
= 0)
V(BR)EBO
-
Vde
-
50
70
-
60
80
-
Vde
Vde
V(BR)CBO
2N30S3
2N30S3A
S.O
-
Vde
ICEX
-
0.25
!LAde
lEBO
-
0.25
!LAde
IBL
-
0.25
!LAde
hFE
2S
SO
250
2N3053
2N3053A
1.5 Vde)
1.5 Vdel
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
Base Cutoff Current
(VCE = 60 Vde, VBE(off)
40
60
2N30S3
=
2N3053A
1.5 Vde)
ON CHARACTERISTICS(1)
DC Current Gain
(lc
(lc
=
=
= 2.5 Vde)
= 10 Vde)
1S0 mAde, VCE
1S0 mAde. VCE
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
2N3053
2N3053A
Base-Emitter Saturation Voltage
(lC = 1S0 mAde, IB = 15 mAde)
2N3053
2N3053A
Base-Emitter On Voltage
(lC = 1S0 mAde, VCE = 2.S Vde)
VBE(on)
2N3053
2N3053A
Vde
-
1.4
0.3
0.6
1.7
1.0
-
1.7
1.0
100
-
MHz
15
pF
80
pF
-
VBE(sat)
-
Vde
Vde
SMALL-SIGNAL CHARACTERISnCS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
=
= 50 mAde, VCE =
= 0, f = 140 kHz)
= 0, f = 140 kHz)
(lC
10 Vde. f
10 Vde, IE
= O.S Vde,
IC
= 20 MHz)
tr
Cobo
-
Cibo
-
(2) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-87
•
2N3073
CASE 22-03, STYLE 1
TO-18 (TO-206AAI
MAXIMUM RATINGS
•
Symbol
Value
Unit
Colleetor-Emitter Voltage
VCEO
60
Vde
Colleetor-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
500
mAde
Colleetor Current -
'fl.
II .:~,~,
3 Collector
Rating
Continuous
Total Device Dissipation @ TA
Derate above 25"C
=
25"C
Po
360
2.06
mW
mWrC
Total Device Dissipation @ TC
Derate above 25"C
=
25"C
Po
1.2
6.85
Watts
mWrC
TJ, Tstg
-65 to +200
"C
Operating and Storage Junction
Temperature Range
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N2904 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Colleetor Cutoff Current
Emitter Cutoff Current
Base Cu rrent
(lC = 30 mAde, IB = 0)
(lc = 100 "Ade, IE = 0)
(IE = 100 !LAde, IC = 0)
(VCE = 30 Vde, VBE = 0)
(VCE = 30 Vde, VBE = 0, TA = 125"C)
V(BR)CEO
60
-
Vde
V(BR)CBO
60
-
Vde
V(BR)EBO
4.0
-
-
10
10
nAde
"Ade
100
"Ade
10
nAde
ICES
(VEB = 4.0 Vde, IC = 0)
lEBO
(VCE = 30 Vde, VBE = 0)
IB
Vde
ON CHARACTERISTICS
DC Current Gain(1)
-
hFE
30
12
15
130
VCE(sat)
-
0.25
1.0
Vde
VBE(sat)
-
-
1.2
2.0
Vde
VBE(on)
-
1.2
Vde
130
-
MHz
Cobo
-
10
pF
Input Impedance
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
hie
-
1.5
kohms
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
h re
-
26
X 10- 4
Small-Signal Current Gain
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
hfe
25
180
Output Admittance
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
hoe
-
1200
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde, TA = -55"C)
(lC = 300 mAde, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
(lc = 50 mAde, IB = 2.5 mAde)
(lc = 300 mAde, IB = 30 mAde)
(lC = 50 mAde, IB = 2.5 mAde)
(lC = 300 mAde, IB = 30 mAde)
(lC = 50 mAde, VCE = 1.0 Vde)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Produet(2)
(lC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
fr
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 140 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-88
"mhos
2N3073
ELECTRICAL CHARACTERISTICS
(continued) (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Turn-On Time
(lC = 300 mAde, lSI = 30 mAde)
ton
-
40
ns
Turn-Off Time
(lC = 300 mAde, lSI = IS2 = 30 mAde)
toff
-
100
ns
(1) Pulse Test: Pulse Width ~ 300 itS, Duty Cycle ~ 1.0%.
(2)
is defined as the frequency at which Ihfel extrapolates to unity.
tr
FIGURE 1 - TURN-ON AND TURN-OFF SWITCHING TIMES TEST CIRCUIT
t4.0 V
-30 V
30
PULSE GENERATOR
VIn~::UIr. If "'. 6 0 ns
0.1 "F
1
PW~05"s
0.47 "F
f---o
Vout
330
140
TO SAMPLING
OSCI L LOSCOPE
500 pF
lr< 1.0 ns
Zin # 0.1 Megohm
Zlil = 50~!
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-89
•
2N3114
CASE 79·04, STYLE 1
TO·39 (TO·205AD)
MAXIMUM RATINGS
Value
VCEO
150
Vde
Collector-Base Voltage
VCBO
150
Vde
Emitter-Base Voltage
VEBO
s.o
Vde
IC
200
mAde
Total Device Dissipation @ T A = 2S"<:
Derate above 2S·C
Po
0.8
4.S7
Watt
mWrC
Total Device Dissipation @ TC = 2S·C
Derate above 25·C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Rlltlng
Collector Current -
•
Unit
Symbol
Collector-Emitter Voltage(l)
Continuous
Operating and Storage Junction
Temperature Range
AMPLIFIER TRANSISTOR
NPNSIUCON
Refer to 2N3498 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
= 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lC = = 30 mAde, IB = 0)
V(BR)CEO
150
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 ,JAde, IE = 0)
V(BR)CBO
150
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 pAde, IC = 0)
V(BR)EBO
S.O
-
Vde
OFF CHARACTERISncs
Collector Cutoff Current
(VCB = 100 Vde, IE = 0)
(VCB = 100 Vde, IE = 0, TA
ICBO
=
150·C)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
lEBO
,JAde
-
-
0.010
10
0.10
,JAde
ON CHARACTERIST1CS
DC Current Gain(2)
(lC = 0.1 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde, TA
hFE
=
15
30
12
-55·C)
-
-
120
1.0
Vde
VBE(sat)
-
0.9
Vde
Cobo
-
9.0
pF
Cibo
-
80
pF
hfe
2S
-
ihfei
2.0
-
-
-
30
Ohms
Collector-Emitter Saturation Voltage(2)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(2)
(lC = 50 mAde, IB = 5.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 20 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VEB = 0.5 Vde, IC
= 0, f =
140 kHz)
Small-Signal Current Gain
(lC = 1.0 mA, VCE = 5.0 V, f
=
Current Gain - High Frequency
(VCE = 10 Vde, IC = 30 mAde, f
Real Part of Input Impedance
(lC = 10 mA. VCE = 10 V, f
1 kHz)
= 20 MHz)
Re(hie)
=
100 MHz)
(1) Between 0 and 30 rnA.
(2) Pulse Test: Pulse Width .. 300 p,s, Duty Cycle .. 1.0%.
MOTOROLA SMALL-S)GNAL TRANSISTORS, FETs AND DIODES
3-90
2N3135
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
~
MAXIMUM RATINGS
3 Collector
,fl":'~.~,
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
35
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
IC
600
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0.4
2.28
mWrC
Total Device Dissipation Cd! TC = 25°C
Derate above 25°C
Po
1.8
10.3
Watts
SWITCHING TRANSISTOR
mWrC
PNP SILICON
-65 to +200
°c
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
TJ, Tstg
Watt
Refer to 2N2904 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
35
-
Vdc
Collector-Base Breakdown Voltage
(lc = 10 !LAde, IE = 0)
V(BR)CBO
50
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
V(BR)EBO
4.0
-
Vdc
-
0.1
!LAde
-
0.05
30
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 30 V, VBE = 0.5 V)
ICEX
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA = 150°C)
ICBO
Base Cutoff Current
(VCE = 30 V, VBE = 0.5 V)
IBL
!LAde
0.1
!LAde
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAde, VCE = 10 Vdc)
(lC = 150 mAde, VCE = 10 Vdc)(l)
hFE
-
25
40
120
-
Collector-Emitter Saturation Voltage(1)
(lc = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.6
Vdc
Base-Emitter Saturation Voltage( 1)
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
-
1.5
Vde
for
200
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cobo
-
10
pF
Input Capacitance
(V8E = 2 Vde, IC
Cibo
-
40
pF
ton
26
75
ns
toff
70
150
ns
= 0, f =
100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 V, IC
=
150 mA, 181
=
15 mAl
Turn-Off Time
(VCC = 6.0 V, IC
=
150 mA, 181
=
182
=
15 mAl
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-91
..
2N3227
For Specifications, See 2N2368 Data.
2N3244
2N3245
MAXIMUM RATINGS
Symbol
2N3244
2N3245
Unit
Collector-Emitter Voltage
Rating
VCEO
40
50
Vdc
Collector-Base Voltage
VCBO
40
50
Vdc
Emitter-Base Voltage
VEBO
5.0
IC
1.0
Adc
Collector Current -
Continuous
Vdc
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
Po
1.0
5.71
Watt
mW/'C
Total Device Dissipation @ TC
Derate above 25'C
=
Po
5.0
28.6
Watts
mWI'C
TJ, Tstg
-65 to +200
'c
25'C
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
3
I.
1
1 EmLtter
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
•
2
~«>"~.
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
35
'CIW
Thermal Resistance, Junction to Ambient
RruA
0.175
'C/mW
Characteristic
ELECTRICAL CHARACTERISTICS (TA
PNPSIUCON
= 25'C unless otherwise noted. I
Symbol
Characteristic
Min
Max
40
50
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
V(BR)CEO
2N3244
2N3245
V(BR)CBO
Vdc
-
Vdc
5.0
-
IBEV
-
80
nAde
Collector Cutoff Current
(VCE = 30 Vde, VBE = 3.0 Vde)
ICEX
-
50
nAde
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
ICBO
2N3244
2N3245
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Base Cutoff Current
(VCE = 30 Vde, VBE
V(BR)EBO
= 3.0 Vde)
=
40
50
100'C)
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
(VEB = 4.0 Vde, IC = 0)
lEBO
2N3245
2N3244
-
Vde
,.Ade
0.050
10
nAde
30
30
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 150 mAde, VCE
hFE
=
1.0 Vde)
2N3244
2N3245
60
35
-
(lC
= 500 mAde, VCE =
1.0 Vde)
2N3244
2N3245
50
30
150
90
(lC
=
2N3244
2N3245
25
20
-
1.0 Ade, VCE
= 5.0 Vde)
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC
(lC
= 500 mAde, IB =
=
1.0 Ade, IB
=
50 mAde)
100 mAde)
VCE(sat)
2N3244
2N3245
2N3244
2N3245
2N3244
2N3245
-
3-92
-
Vde
0.3
0.35
-
0.5
0.6
-
1.0
1.2
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
-
2N3244, 2N3245
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Base-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Adc, IB = 100 mAde)
Min
Max
Unit
Vdc
VBE(sat)
-
-
1.1
1.5
2.0
175
150
-
Cobo
-
25
pF
Cibo
-
100
pF
15
ns
35
40
ns
t.
-
140
120
ns
tl
-
0.75
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, I = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, I =
100 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
= 0, I =
100 kHz)
2N3244
2N3245
IT
MHz
SWITCHING CHARACTERISTICS
Delay Time
(lC = 500 rnA, IB1
VEB = 2.0 V, VCC
Rise Time
Storage Time
(lC
IB1
Fall Time
= 50 rnA
= 30 V)
2N3244
2N3245
= 500 rnA. VCC = 30 V
= IB2 = 50 rnA)
Total Control Charge
(IC = 500 rnA, IB = 50 rnA, VCC
2N3244
2N3245
td
tr
OT
= 30 V)
45
-
2N3244
2N3245
ns
pC
14
12
(1) Pulse Test: PW", 300 /LS, Duty Cycle'" 2.0%.
FIGURE 1 -
2.0
MINIMUM CURRENT GAIN CHARACTERISTICS
--
125°C
1.5
75°C
25°C
.! 1.0
Z
.............. I"'...~,
'--
55°C
0.5
"
:"'10..
:-....:
"'"
0.2
50
100
200
Ie, COLLECTOR CURRENT (mAl
500
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-93
I
IV _
-
--~ l'-"':::.~
15°C
!:l::;
i
I
...
,
';
~'" ' i
2V
I-
I
~2~oC-1-j
I;~
~
~
. . . r--.
~~,
"
1000
•
2N3244,2N3245
FIGURE 2 -
f!
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS
2N3244
1.4
~
III 1.2
~..
1.0
!
0.8
~
~8
Ie = 150 mA
le=50mA
0.6
......
0.4
IJ 0.2
0.5
•
"'
"- ........
~
2.0
1.0
I'...
\.
\
--
i'-..
~
10
I•• BASE CURRENT (mAl
5.0
--
\\Ie= 750mA
Ie = 500 mA
\
s
i
T,2~3~::C
1\
1""-"
~
100
50
20
200
2N3245
in 1.4
i
III
1.2
~
1.0
i
I
2N3245
T, = 25°C
150 mA
50mA
~~
,
0.6
i
'"
0.4
IJ 0.2
0.5
FIGURE 3 -
2.0
5.0
II
I--- ~
....
--
VIE~ ."..
VeE! ..."
20
'-
50
FIGURE 4 -
+0.5
100
200
TYPICAL TEMPERATURE COEFFICIENTS
rTi-=C=+===F=F+==+:::O
(25 to 125°CI
./
i15' -0.51--+--+-+-+-+=-.j...-.p""o:l~-+~
~
~
2N3245
0.4 l- i--
10
I•• BASE CURRENT (mAl
i.I
I
T, = 25°C
--......;
.......
MAXIMUM SATURATION VOLTAGES
I I I I
1.6 - f - {J,= 10
r-+-
i""'--
r-2.0
1.0
..........
I\..
\
~
s
~50mA
t--
~
... 0.8
\
\500mA
~ -1.0 .---+--+~
~
~
~
2N3244
I
o
50
100
200
500
Ie. COLLECTOR CURRENT (mAl
200
1000
400
600
Ie. COLLECTOR CURRENT L(IIA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-94
800
1000
2N3244,2N3245
FIGURE 5 200
100
~
~
~
JUNCTION CAPACITANCE
---
50
'
§
TJ
25°C
140
120
C,.
.
!
~
CN
0.2
0.5
!i!
;::
r--r.. •... t..
r- r-__
~
~.
BO
40
20
p,= 10
30V
20
30
p.
P.
20
P.
t...~.
,
10
200
300
400
-30Y
~ ~~
2Y
+
Jf--
59n
SCOPE
-10.75 Y
Q.2N324~~
Q.... 2N3244
~ :;.--
~
200 (}
PW = 200 ns
RISE TIME 1!5. 2 ns
DUTY CYCLE = 2%
,.
Q•
.5
50
100
FIGURE 9 -
o
IR
_lI5Y
--
1000
200
500
I" COLLECTOR CURRENT (mA)
TURN-OFF EQUIVALENT TEST CIRCUIT
I
B5V
I
1-1
I
J1 l-
-1 ~t,j.-t,
OUTY CYCLE
1
= 2%
AGURE 10 -
QT TEST CIRCUIT
-30Y
10
10
600
< t, < 500.,
tl < 5ns
t,>l p s
59(}
-lfl
SCOPE
200 (}
.J 1. 10 .,
IN916
DUTY CYCLE = 2%
+3Y
AGURE 11 -
800
TURN-ON EQUIVALENT TEST CIRCUIT
Q,2N3244
QJ 2N3245
1.0
r--
~
FIGURE 8 -
1,.. ....
--
5 2.0
30
10
....... ...
~
lu
1" COLLECTOR CURRENT (mAl
Q,
~ 50
25°C
T,
I"
20
..............
P.
100
CHARGE DATA
--LIMIT
- - TYPICAL
TJ = 25°C
10
V"
10
30
--
30V
2V
Vo.
p.
........
tOO
60
....
1.0
2.0
5.0
REVERSE BIAS (VOLTS)
FIGURE 7 -
Vo.
TYPICAL SWITCHING TIMES
t,
160
o
10
0.1
10
::;
MAX-TYP---
20
20
FIGURE 6 1BO
1200 pf max for 2N3245
1400 pf max for 2N3244
TURN-OFF WAVEFORM
TlME_
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-95
..
2N3249
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
til
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
12
Vde
Collector-Base Voltage
VCBO
15
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
rnA
25'C
Po
0.36
2.06
Watt
mW/,C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.2
6.9
Watts
mW/,C
TJ, Tstg
-65 to +200
'c
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25'C
•
=
Operating and Storage Junction
Temperature Range
3/1
~~"~.
Hm,It.,
SWITCHING TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
12
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 IoIAde, IE = 0)
V(BR)CBO
15
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 IoIAde, IC = 0)
V(BR)EBO
5.0
-
Vde
Base Cutoff Current
(VCE = 10 Vde, VBE = 1.0 Vde)
IBEV
-
50
nAde
Collector Cutoff Current
(VCE = 10 Vde, VBE = 1.0 Vdc)
(VCE = 10 Vde, VBE = 1.0 Vde, TA = 100'C)
ICEX
Characteristic
OFF CHARACTERISTICS
-
IoIAde
0.05
5.0
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 0.1 mAde, VCE = 1.0 Vde)
(lC = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
-
hFE
100
100
100
75
35
Collector-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lc = 100 mAde, IB = 10 mAde)
VBE(sat)
300
-
-
-
Vde
-
-
0.125
0.25
0.45
Vde
0.6
0.7
-
0.9
1.1
1.3
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lc = 20 mAde, VCE = 10 Vde, f = 100 MHz)
300
-
MHz
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cobo
-
8.0
pF
Input Capacitance
(VBE = 1.0 Vde, IC = 0, f = 100 kHz)
Cibo
-
8.0
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-96
2N3249
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
IC = 100 rnA, 18 = 10 rnA,
V8E = 0.5 V, VCC = 10 V
td
-
5.0
ns
tr
15
ns
IC = 100 rnA, 181 = 182 = 10 rnA,
VCC=10V
ts
-
60
ns
tf
-
20
ns
Turn-On Time
IC = 10 rnA, 181 = 1.0 rnA,
V8E = 0.5 V, VCC = 3.0 V
ton
-
90
ns
Turn-Off Time
IC = 10 rnA. 181 = 182 = 1.0 rnA,
VCC = 3.0 V
toff
-
100
ns
a,.
-
150
pC
Total Control Charge
(lC = 10 rnA. 18 = 0.25 rnA. VCC = 3.0 V)
(1) Pulse Test: Pulse Width = 300 ,"", Duty Cycle'" 2.0%.
•
FIGURE 1 - ton CIRCUIT
Vee -\111\.----,
FIGURE 3 -
Ie
;~:c,
,
200
• •J
100
~ t'-.
TYPICAL SWrrCHING TIMES
Ilel= 101110 ll~ LI
.....
3 V, V.. 0.5 V
T, 25°C
Vee
t,
50
FIGURE 2 - toft CIRCUrr
Vee
3
10
.
011l1li
10K
1K
ohms
pF
285
4
12
lie
95
~
1,(3 V)
-~
t>
V..
- V,
V,
V,
voll.
voll.
voll.
volll
+0.5
+0.5
-10.6
-10.7
10.9
-11.3
+9.1
+1.7
-
~ ~ 1"-1"-
'T' c.
1•• 11
volll
~
-l_
At
Ie
InA
10
100
....
~
Vcc_"IIII_--,
CS_ I-
~I,(IOV)
2
I
20
10
100
50
Ie, COLLECTOR CURRENT (mA)
FIGURE 4 - MINIMUM CURRENT GAIN CHARACTERISTICS
200
T,
I
-
12!OC
1c
T,I= 25
100
~Nkc~
V.. =IV
~
I
J
T,
-
" -...-
!E
;I
150 C
~
.......
50
-
T, = _55°C
......
....... ........
20
0.1
0.2
0.5
1.0
2.0
5.0
Ie. COlLECTOR CURRENT (rnA)
10
20
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-97
\.\
\1\
\
' .....
50
100
2N3249
FIGURE 5 -
MAXIMUM CHARGE DATA
FIGURE 6 -
5000
UNLESS NOTED, Vee 3V
T, = 25°C
2000
1111
1000
Q"
i
/J,
Q,.fj,
500
-
200
i-'"
b::::
f- I--
100
40
/'"
10
40
V""
1
10V
n
-
=
Q.
Vee
C••
...--....,;
i'
.-UjJ,
i.-t"r
C••
4
0.1
100
~
.......
.....
.. --"'"
3V
50
10
20
Ie. COLLECTOR CURRENT (mA)
I
..
2
I--
"- ........
......... r-.
100:»
I--:: V
~~J
---TYP
~!
)1'
100°C
FIGURE 7 -
•
JUNCTION CAPACITANCE
20
2.0
1.0
0.5
REVERSE BIAS (VOLTS)
0.2
5.0
COLLECTOR SATURATION VOLTAGE CHARACTERISTICS
1.0
i...
.
E
,
0.8
le= 10mA
Ie = 3 mA
i:!
Ic=30mA
\
!
!:Ii
\
0.6
0.4
-I-
,J
o
0.05
0.02
FIGURE 8 -
\ .....
"-
\..
1.0
SATURATION VOLTAGE LIMITS
FIGURE 9 -
III
i
1.0
I-I--
1.2
I I
f,=10
,= 25°C
MAX
1.0
~
!
>
.,
ft
....I-'r
i!5 -0.5
I I
0.8
I
Y~I""
0.5
MIN VN ,,,,,
J I
0.4
MAX YCI
0.2
o
I
,,,,,=
20
Ie. COLLECTOR CURRENT (mA)
10
FIGURE 10 -
o
f---
KJF
O.'
J--
-
~11N3249
-2.5
50
100
,.. LvaL
:!:Q.lI11¥/OC
"'U5.¥/OC
.,..~
L
25OCT0125OC
::to.15111V/OC
:to ",vIC
I
20
I
14.pFml'
-1-
-l
~!lcf.E=2%
TIME -
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-98
,
I-- L55 0 C' TO + J5 0 C)
(250 YO 12yC) -
I I
~
TURN-OFF WAVEFORM
235
-3V_"""'..--...,
AV
-10.1
I
(,550 YO +y-C)
40
~
~
ro
Ie COLLECTOR CURRENT {mAl
~
FIGURE 11 -
QT TEST CIRCUIT
20
(25°C TO 125°C)
fRQMfKJMlfW.
o
10
TYPICAL TEMPERATURE COEFFICIENTS
~ ~ ~forV.,..,
-2
.J.fi1'
-
r-
5.0
-S5oe TO -+25°C
IIIu -1.5
2N3246
........
f--- ~ APPROXIMATE Dh'IATION
~ -1.0
0.6
r-.
2.0
I,. \lASE CURRENT {mAl
1.4
i
'"
... "
.....
0.5
0.2
0.1
"\
r\.
\
0.2
i
T, = 25°C
Ie = 100mA
le=50mA
~
,.
2N32~ -
1\
;\
co
10
~
~
2N3250,A
2N3251,A
MAXIMUM RATINGS
Symbol
Rating
2N3250 2N3250A
2N3251 2N3251A
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
50
Emitter-Base Voltage
VEBO
Unit
60
Vde
60
Vde
5.0
Vde
Collector Current
IC
200
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
0.36
2.06
Watt
mWfC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
1.2
6.9
Watts
mWfC
TJ, Tstg
-65 to +200
'c
Operating and Storage Temperature
Temperature Range
2N3250A,2N3251A
JAN, JTX, JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3 Collector
~()
1 Emitter
3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rruc
0.15
mWfC
GENERAL PURPOSE
TRANSISTORS
Thermal Resistance, Junction to Ambient
RruA
0.49
mWfC
PNP SILICON
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 10 mAde)
2N3250, 2N3251
2N3250A, 2N3251A
V(BR)CEO
40
60
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 !lAde)
2N3250, 2N3251
2N3250A,2N3251A
V(BR)CBO
50
-
Vde
-
Vde
20
nA
50
nAde
60
Emitter-Base Breakdown Voltage
(IE = 10 !lAde)
V(BR)EBO
Collector Cutoff Current
(VCE = 40 Vde, VBE = 3.0 Vde)
ICEX
Base Cutoff Cu rrent
(VCE = 40 Vde, VBE
IBL
= 3.0 Vde)
5.0
-
ON CHARACTERISTICS
DC Forward Current Transfer Radio (1)
(lc = 0.1 mAde, VCE = 1.0 Vde)
hFE
2N3250, 2N3250A
2N3251,2N3251A
40
80
-
(lC
=
1.0 mAde, VCE
=
1.0 Vde)
2N3250, 2N3250A
2N3251,2N3251A
45
90
-
(lc
=
10 mAde, VCE
=
1.0 Vdc)
2N3250, 2N3250A
2N3251,2N3251A
50
100
150
300
(lC
=
50 mAde, VCE
=
1.0 Vde)
2N3250, 2N3250A
2N3251,2N3251A
15
30
-
Collector-Emitter Saturation Voltage (1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage (1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
Vde
0.25
0.5
Vde
0.6
-
0.9
1.2
250
300
-
Cobo
-
6.0
pF
Cibo
-
8.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
Input Capacitance
(VCB = 1.0 Vde, IC
= 0, f =
= 0, f =
2N3250, 2N3250A
2N3251,2N3251A
tr
MHz
100 kHz)
100 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-99
•
2N3250, A, 2N3251,A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Input Impedance
(lc = 1.0 mA, VCE = 10 V, 1= 1.0 kHz)
2N3250, 2N3250A
2N3251,2N3251A
hie
1.0
2.0
6.0
12
kohms
Voltage Feedback Ratio
(lc = 1.0 mA, VCE = 10 V, f = 1.0 kHz)
2N3250, 2N3250A
2N3251,2N3251A
h re
10
20
X 10-4
-
Small·Signal Current Gain
(lC = 1.0 mA, VCE = 10 V, 1= 1.0 kHz)
2N3250, 2N3250A
2N3251,2N3251A
hie
50
100
200
400
-
Output Admittance
(lc = 1.0 mA. VCE = 10 V, 1= 1.0 kHz)
2N3250, 2N3250A
2N3251,2N3251A
hoe
4.0
10
40
Characteristic
Collector Base Time Constant
(lc = 10 mA, VCE = 20 V, 1= 31.8 MHz)
Noise Figure
(lc = 100 pA, VCE = 5.0 V, RS = 1.0 k 0, 1= 100 Hz)
-
/,mhos
60
rb'Cc
-
250
ps
NF
-
6.0
dB
Symbol
Max
Unit
td
35
ns
tr
35
ns
ts
175
200
ns
tl
50
ns
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc
IC = 10 mAdc, IBl = 1.0 mAl
Rise Time
Storage Time
2N3250, 2N3250A
2N3251, 2N3251A
(lC = 10 mAdc, IBl = IB2 = 1.0 mAdc
VCC = 3.0 V)
Fall Time
(1) Pulse Test: PW = 300 p,S, Duty Cycle = 2.0%.
SWITCHING TIME CHARACTERISTICS
FIGURE 1 -
FIGURE 2 -
DELAY AND RISE TIME
500
500
TJ ~ 25°~
le= 101"
Vo ,=0.5V
~
200
100
'"
TJ
-
Vee = 3 V
200
'\ r\.
'\ '\ \.
'\..
"~
~
;:::
100
"
"
"~
I"\. t, @ Vee =10V
'"
f-
.....
.....
10
-
t,@Vee =3V
!'Ie
I"
20
= 25°C
Ie = 10 I" = 10 I"
l"50
STORAGE AND FALL TIME
~
~
""- "
.......
"
10
20
Ie, COLLECTOR CURRENT (mAl
t,
'\
-
'"
50
;:::
.........
~
.......
"
I'
tf
20
~
I......
~ I'--
" "'-
10
r-..
\0
50
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-100
20
50
2N3250,A,2N3251,A
AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 6.0 V, T A = 25'C)
FIGURE 3 -
FREQUENCY
FIGURE 4 -
SOURCE RESISTANCE
10
II
II
f=IKC
", ""-
\
.......
V
I\.
........
SOUiCE RESISTANCE = 116 K
Ie = 100/,A
............ ~
r-
//
........ /
\
.........
IJ
/
= 10pA 1\
Ie
r-....
lI.
/,
Ic= IOmA /
1\
SOURCE RESISTANCE = 4 3 K
Ic= lOpA
/
1/
,/
-
....
'/
r.t
/le=IOO/'A
~
o
100
200
400
IKC
2KC
4KC
IOKC
20KC 40KC
100
100KC
200
400
f. FREQUENCY (CYCLES)
10K
lK
2K
4K
R,. SOURCE RESISTANCE 10HMS)
20K
40K
lOOK
h PARAMETERS
VCE = 10 V, f = 1.0 kc, TA = 25'C
FIGURE 5 - CURRENT GAIN
FIGURE 6 -
400
,,- r" ....
,/'
i--'"
100
80
i"""
60
50
JAN 2N3251A I
~
~250, 2N32~O~
~
JAN 2N3250A
10
50
10
V
01
0.2
20
"
i'..
10
.d
""-
10
.....
2N3251,2N3251A
JAN 2N3251A
'"
~
"'"I"
"2N3250, 2N3250A
[. J~NI 2~312~~~
20
01
02
........
....
10
r'--r-.,
2N3251,2N3251A
........ JAN 2N3251A
2N3250, 2N325OA'
JAN 2N3250A
1.0
......
05
10
20
Ie. COLLECTOR CURRENT (mAl
5.0
INPUT IMPEDANCE
50
2.0
50
1.0
20
05
Ie. COLLECTOR CURRENT (mAl
FIGURE 8 20
........
r--....
2N3250, 2N3250A
JAN 2N3250A
./
FIGURE 7 - VOLTAGE FEEDBACK RATIO
50
V
V
.."
./
1.0
05
20
Ie. COLLECTOR CURRENT (mAl
./
.."
~
10
20
50
02
JAN 2N3251A
20
50
40
01
f:= ~ 2N3251,2N3251A
r-- I-~
-
v
100
~
200
i0
OUTPUT ADMITTANCE
200
r.....
"
[........ !'...
'"
0.5
50
10
01
02
1.0
05
2.0
Ie. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-101
50
10
..
2N3250,A, 2N3251, A
FIGURE 9 -
NORMAUZED CURRENT GAIN CHARACTERISTICS
-
1.0
TJ = l25°C
........
'"
l§
TJ=Lc
1.0
~
r--...
i
"-
'""
......... -....;:
I
TJ=-55'C
fa
,.~
r--
05
~
"'\..
w
~
NORMALIZED AT Ie = 10 rnA. VeE = 1 V
TYPICAL, hFE =
"
~
\
l~i:: ~~~~r ~~~~r~: ~~f ~~'~l~f
0.1
•
01
01
5.0
1.0
10
0.5
50
10
10
Ie. COllECTOR CURRENT {rnA}
FIGURE 10 - COLLECTOR SATURATION REGION
1.0
~
~
0.8
~
'"
~
§;
~
0.6
l\
~
'"'
~
2l<>
0.4
'"
0.2
,}!
TJ =2S'C
~
This graph shows the effect of base current on collector current {3o is the
current gain of the transistor at I volt. and {3, {forced gain} is the rat,o of le/l"
In a elfcu,t. EXAMPLE, For type 2N32SI. esti'""te a base current 11,,1 to Insure
saturation at a temperature of 25°C and a collector current of lOrnA.
Observe that at Ie' 10 rnA an overdrive factor of at least 2.S IS required to
drive the transistor well into the saturation region. From Figure 1, it is seen that
~50mA
h,,@ I volt IS typically 167 {guaranteed limits from the Table of Characteristics
~~
ItAI
~
o
can be used for "worst-case" design) ...
/30 rnA
f30
r;,. OVERDRIVE FACTOR
FIGURE 12 - TEMPERATURE COEFFICIENTS
FIGURE 11 - SATURATION VOLTAGES
1.0
I'~=\O
-TJ =2S'C
~
~
0.6
~
V"I:::J,. V
::
.-
0.8
'"
~
~
I;Bv;e:!~or;v;e;.I{,;.t;}:1;;;i;;;t
2 t
;s,;ci';0;12;)jc;;;;;;;;;;
I--+-+-t--t--
-....-
-SI'C to 2S'C -+--boo""''''-!
p
~
.§
15<3
§;
z
0
~
I" ;::; 6.68 rnA typ
3rA/
3
I
~
167
2.S = 10 mAli"
h,,@ I Volt
{3,=~
G:
0.4
~
~
VCElsat\
02
-1.0
-1.5
-~
-2.0
-2.S
10
Ie. COllECTOR CURRENT IrnAI
20
so
yV
---
-0.5 I--i--+--+--+--+--+V--::;"'Bv, for V"
r--
2S'C to 12S'C
/
./
k::~"""'-
--
~:/'"
~ - -SS'C to 2S'C +-+---"1--+-+--"1-'"
L-....L..-...I.I--'-I---'---I-......I...-o.I.~
30
40
so
20
o
10
Ie. COllECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-102
-
2N3250, A, 2N3251, A
FIGURE 13 -
IT AND 'b'Cc versus IC
FIGURE 14 -
400
I
'~"
1!
~
~
'VI'
/ "- t'-....
~
8 '"
c
~
'" ~
~
;::
~
~
'"
~
8
z
,,-
\
300
=>
c
200
I
~
~
z
Vc, = IOV,
1,=5mA,
M.A. G, = 29 db ITVPICALLVI
-
i"""'-- r-
30 MC EQUIVALENT CIRCUIT
h - I"'-
-
-..
2.1 pi
\1
II
rb'C C
35 pi
17 On
;::r;: VBmmhos
x 100
3 pl;::r:
2.2Kn
~
~
U => 100
~ .>C
~
Vc, = 20V
TA = 25"C
FIGURE 15 -
20
TJ
•
301
25
20
10
IS
Ie, COLLECTOR CURRENT ImAde)
JUNCTION CAPACITANCE
FIGURE 16 -
CHARGE DATA
1000
~ 2!OC
,
- - Vcc=IOV
- - - Vcc=3V I
1--1-- 11,=10
500 I-- I-- TJ = 25°C
~
10
.....
"
k4
........
'"
Ll
~
200
!'....
I""-r--
aT
-
r-
'"
1'1'
.......
1-0.
C'bo ~
I--
~-
~
Cabo
t"-..
r:
+""10-
100
I'r--
I'-. r-...
50
~
,...., L ,
,-
0.2
05
1.0
2.0
REVERSE BIAS IVOLT'l)
5.0
10
1-
- .-
20
0.1
lL
1
r-- ,-
~
10
20
Ic, COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-103
"'.;'
"
50
2N3252
·2N3253
2N3444
MAXIMUM RATINGS
Symbol
2N3252
2N3444
Unit
Collector-Emitter Voltage
Rating
VCEO
30
40 :
50
Itdc
Collector-Base Voltage
VCBO
60
75
80
Vdc
Emitter-Base Voltage
VEBO
Total Device Dissipation
@TA = 25"C
Derate above 25"C
Po
Total Device Dissipation
@TC = 25"C
Derate above 25"C'
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
2N3253
5.0
JAN, JTX AVAILABLE
2N3253, 2N3444
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Vdc
Watts
mW/"C
1.0
5.71
Watts
mW/"C
5.0
28.6
-65 to +200
"C
,f/I ~~"~.'
2
•
THERMAL CHARACTERISTICS
Characteristic
1
1 Emitter
SWITCHING TRANSISTORS
Thermal Resistance, Junction to Case
NPN SIUCON
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
30
40
50
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 10 mAde, pulsed, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE .= 0)
V(BR)CEO
2N3252
2N3253
2N3444
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off)
(VCE = 60 Vdc, VEBloffl
V(BR)EBO
ICEX
= 4.0 Vdc)
= 4.0 Vdc)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TA
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA
2N3252
2N3253, 2N3444
ICBO
=
100"C)
=
100"C)
2N3252
2N3252
2N3253, 2N3444
2N3253, 2N3444
Emitter Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
Base Cutoff Current
(VCE = 40 Vdc, VEB(off)
(VCE = 60 Vdc, VEB(off)
Vdc
V(BR)CBO
2N3252
2N3253
2N3444
lEBO
IBL
Vdc
-
60
75
80
-
5.0
-
-
0.5
0.5
Vdc
pAdc
-
pAdc
0.50
75.0
0.50
75.0
-
0.05
-
0.50
0.50
pAdc
pAdc
= 4.0 Vdc)
= 4.0 Vdc)
2N3252
2N3253, 2N3444
=
1.0 Vdc)
2N3252
2N3253
2N3444
30
25
20
-
(lC
= 500 mAde, VCE =
1.0 Vdc)
2N3252
2N3253
2N3444
30
25
20
90
75
60
(lC
=
2N3252
2N3253
2N3444
25
20
15
-
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 150 mAde, VCE
1.0 Adc, VCE
hFE
= 5.0 Vdc)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-104
-
-
2N3252,2N3253,2N3444
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Symbol
Min
Max
2N3252
2N3253, 2N3444
-
0.3
0.35
= 500 mAde)
2N3252
2N3253, 2N3444
-
0.5
0.60
100 mAde)
2N3252
2N3253, 2N3444
-
1.0
1.2
-
1.0
1.3
1.8
200
175
-
Cobo
-
12
pF
Cibo
-
80
pF
td
-
15
ns
tr
-
30
35
ns
40
ns
Characteristic
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lC
= 500
(lC
=
mAde, IB
1.0 Ade, IB
=
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VBE(sat)
Unit
Vde
Vde
0.7
SMALL-SIGNAL CHARACTERISTICS
fT
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, I = 100 MHz)
Output Capacitance
10 Vde, IE
= 0, I =
100 kHz)
Input Capacitance
(VEB = 0.5 Vde, IC
= 0, I =
100 kHz)
(VCB
=
MHz
2N3252
2N3253, 2N3444
•
SWITCHING CHARACTERISTICS
IC = 500 mAde, IBl = 50 mAde
VCC = 30 V, VBE = 2.0 V
Delay Time
Rise Time
IC = 500 mAde, IB1
VCC = 30 V
Storage Time
Fall Time
Total Control Charge
(lC = 500 mAde, IBl
=
IB2
2N3252
2N3253, 2N3444
= 50 mAde
-
ts
tl
aT
30
ns
5.0
nC
= 50 mAde, VCC = 30 V)
(1) Pulse Test: Pulse Width = 300 ILS, Duty Cycle = 2.0%.
FIGURE 1 -
FIGURE 2 - TYPICAL FALL TIME VARIATIONS
TYPICAL STORAGE TIME VARIATIONS
.....
70
-fl. = 20,
50
...
30
c
'"
0
...
.. t:::"
l;;
:
20
--
~-
- --
.... ~
'/
~"'"
fl. = 10
I
11,=1 12
"
50
,- ~~ fl.
"
...
~
oS
T ....
fl·-IO
~
;::
....
..... r-.
~
.5
t'.= t, -1/8t,-,
-
30
I.. In
Vee = 30 V
_ _ 25°C TJ
_125°C TJ
20
~
~
".::: ......
~- 1-,
""" ~ ~ t-.......
~
'
........
20
25°C
-_125°C
1
70
..
70
1--
10
50
....
'1"
\' .,- ~
~
(!I
....
.,-
l .....
oS
;::
TTl,_ti:
100
100
100
1
200
300
Ie. COLLECTOR CURRENT (mAl
r-......
10
500
700
1000
50
70
100
200
300
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-105
.....
500
1-1--10-
700
1000
2N3252,2N3253,2N3444
FIGURE 3 - COLLECTOR SATUAAnoN VOLTAGE CHARACTERISTICS
2N3252
_1.4
i
~
2N3252
1.2
~
li
i
~
~u;j
\
1.0
\
le= 250 rnA
le= 100 rnA
0.8
;C
I'\...
0.4
i
,.J
\
\
i'..
.....
r-- ....
-
T,= 25°C
le= 750mA
\ le= 500 rnA
\
.. 0.6
I
\
\
\
r--.
r-- ~~
-
"'
-
0.2
2
6
4
7
8 9 10
20
BASE CURRENT (mAl
40
30
15
I~
60 70 80 90 100
50
150
200
2N3253
~
1.2
~
1.0
i
1
\
\
0.8
~U
_
0.6
i
0.4
•.J
0.2
213253
-
T, = 250C
\
\
le= 100mA
i
a
\
Ie = 250 mA
1\
,
,.~
-
~
8
4
7
8 9 10
15
20
I" BASE CURRENT (mA)
le= 750mA
.......
"- r--
\..
2
"
le= 500mA
40
30
50
70 80 90 100
80
150
200
2N3444
i1!
1.4
;
1.2
~
1.0
g
1
-
1\
le= l00mA
\
\
0.4
J
0.2
,
" ..... i'-o
.............
0.8
II
\le _7S0mA
le- SOOmA
Ie= 2S0mA
~ 0.'
I
213444
T, = 2SoC
\
2
.....
4
•
"7
•
9 10
15
20
30
40
50
80
70 80 90 100
I.. SASE CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-106
150
200
2N3252,2N3253,2N3444
FIGURE 4 -
MINIMUM CURRENT GAIN CHARACTERISTICS
2N3252
10
T,
50
125°C
T,
-
15°C
T,
55°C
I 2N3252
_
VCE = 1 V
...:::: ~
25°C
T,
- --.....- ......
2V
-VeE
-:::::. .....
--..I"r-...'", ~..::",
~
---.. r-...
-......" ~ 1"
...... ~
S~ ~
~
......
5
50
60
10
80
90
100
200
Te. COLLECTOR CURREIIT {mAl
500
400
300
600
100
800 900 1000
I
1
2N3253
10
50
z
;;:
TJ
_
125°C
~
'"
25°C
~
~
1'l
'"=>
TJ _ -lSOC
20
T,
'"
55°C
;;;:
:E
£.
2N3253
--:::-.:: -
--
30
T,
..:::...,-
_
VCE = 1 V
-~_Vco
~-
~
-.... ~ I~
r........ ~ ~
r--,
~ ~ ~ r" ...
"
10
2V
..:::-
....... ....... r-.:
.........-;
5
50
60
10
80
90 100
200
300
Ie. COLLECTOR CURRENT {mAl
400
500
600
100
800 900 1000
2N3444
10
I 'N3444_
50
VcE-l V
T,
z
;;: 30
-:::..::: ~-- .....
125°C
'"
:"':::::
~
~
1'l
T,
'"=>
'";;;:
:E
~.
15°C
T, _
55°C
5
50
60
10
80
90 100
~ ...............
"'
10
200
300
Ie. COLLECTOR CURRENT {mAl
400
500
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-107
iv
...
-r----... ~ ~ ~
25°C
20
T, _
-
...!.-V~,
~
600
~
........ ......
........ .....
100
800 900 1000
•
2N3252,2N3253,2N3444
FIGURE 5 -
TYPICAL TURN-ON TIME VARIATIONS
WITH VOLTAGE
FIGURE 6 -
100
100
70
I'\..
fl,= 10 rT = 2SoC
,I'
....
51
30
~
;:::
20
-- '"
70
100
FIGURE 7 -
200
N'@!"~2~
500
100
-
Yee 30Y
le= 101"
TJ = 25°C
1/
T =1250i '7IT(=12rc
/ / ~N3253, 2N3444
/ V/
~
I~ 2000
...
...
r-..... ....
V/ V
..........
0.5
0.2
FIGURE 9 -
a..
r......
300
. /V
in
1.2
L_
-
MINVllf"tl
0.6
--
MAX VClI••f , 2N32S3 -2N3444
0.4
~
....
I
~
~/
./
k ~V
-
O.S
--
i-""': ----5soc TO 2SoC
8vc for Yell•ll,
I
y
-2.0
700
1000
-
~" fO~ V'::,y
~
~ --::.SSOC TO 2SoC
_.J:::1
o
200
400
600
Ie. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-108
V
"1
./
-1.0
o
200
300
SOO
Ie. COLLECTOR CURRENT (rnA)
~J-. ...........
u
-I.S
100
TYPICAL TEMPERATURE COEFFICIENTS
12S 0CT
MAX Ve.\...\ 2N32S2
0.2
1000
V
g
isi3
$o -0.5
.... 1 ?
700
2~OC TO 11250
1.0
MAXV"lg~ ~
200
300
SOD
Ie, COUECTOR CURRENT (mA)
I.S
/
I
100
2.0
I
fl,J
70
FIGURE 10 -
LIMITS OF SATURATION VOLTAGES
10
TJ = 2SoC
1.4
200
SO
50
20
1.8
1.6
1/
~
1"- ....
10
V
././
500
1.0
2.0
5.0
REVERSE BIAS (VOLTS)
2N3252
V
".
" .....
70
~
700
.........
..... ~
V
/
~u
1000
50
1000
MAXIMUM CHARGE DATA
3000
CI'
30
!;c
700
QT
"
....
z0 0.8
.~I-
200
300
SOO
Ie, COLLECTOR CURRENT (rnA)
FIGURE 8 -
8
'"
70
SOOO
10
::>
SO
1000
~
....
1.0
~
10
700
~
50
0.1
~
10,000
Cob
i
'~
20
- - - TYP
r-- .....
~g
.;
JUNCTION CAPACITANCE VARIATIONS
....
20
...c:.
~~
30V
Vee
r--
200
300
Ie, COLLECTOR CURRENT (rnA)
~
u
0
--12SoC~
t,
'"
ii:
~ee~ 1---"IT
~
z
!;;
30
fl'
7000 ~
G::
u
...;:::
Vee 30V±
10
_2SoC
r-...
T}=
--MAX
~
70
fc
SO
Jso~
100
...u
¥
....s
~
::;;
"r-. ...... r"::
SO
a
70
~
t~@~"I=;O~
10
•
r-
J
l'o... ....
50
...::;;.s
TYPICAL RISE TIME VARIATIONS
WITH TEMPERATURE
800
1000
2N3300
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
3 Collector
.:£Q
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
(Applicable 0 to 10 mAde)
Rating
VCEO
30
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Collector Current -
,I/!
1 EmItter
Continuous
2N3300
2N3302
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
0.8
4.56
0.36
2.06
Watt
mWI'C
Total Device Dissipation Iii! TC = 25'C
Derate above 25'C
Po
3.0
17.2
1.8
10.3
Watts
mWI'C
Operating and Storage Junction
Temperature Range
~65
TJ, Tstg
to +200
2N3302
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTORS
'c
NPN SILICON
,1
Refer to 2N2218 for graphs.
ELECTRICAL CHARACTERISTICS (TA
25'C unless otherwise noted.)
=
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
30
-
Vde
V(BR)CBO
60
-
Vde
V(BR)EBO
5.0
-
Vde
0.01
10
pAde
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
(lc
=
(lC
=
(IE
=
10 mAde, IB
10 pAde, IC
= 50 Vde, VBE = 0)
= 50 Vde, VBE = 0, TA =
Emitter Cutoff Current (VBE = 3.0 Vde, IC = 0)
Base Current (VCE = 50 Vde, VBE = 0)
Collector Cutoff Current
= 0)
= 0)
= 0)
10 pAde, IE
(VCE
(VCE
ICES
-
lEBO
-
10
nAde
10
nAde
35
50
75
50
100
50
-
150'C)
IB
-
ON CHARACTERISTICS
DC Current Gain
(lc = 0.1 mAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lc = 10 mAde, VCE = 10 Vde)(1)
(lC = 150 mAde, VCE = 1.0 Vde)(1)
(lC = 150 mAde, VCE = 10 Vde)(1)
(lC = 500 mAde, VCE = 10 Vde)(1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter Voltage
-
hFE
2N3300,
2N3300,
2N3300,
2N3300,
2N3300,
2N3300,
2N3302
2N3302
2N3302
2N3302
2N3302
2N3302
(lc = 150 mAde, IB = 15 mAde)
(lc = 300 mAde, IB = 30 mAde)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
(lC = 150 mAde, IB = 15 mAde)
(lc = 300 mAde, IB = 30 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
(lc = 150 mA, VCE = 10 V)
-
-
VBE(on)
-
300
0.22
0.45
0.6
Vde
1.1
1.3
1.5
Vde
1.1 V
Max
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
250
-
(VCB = 10 Vde, IE
Cobo
-
8.0
pF
= 2.0 Vde,
Cibo
-
20
pF
Bandwidth Product
Output Capacitance
Input Capacitance
(VBE
(lc = 50 mAde, VCE = 10 Vde, f = 100 MHz)
IC
= 0, f = 140 kHz)
= 0, f = 140 kHz)
IT
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 25 Vde, IC = 300 mAde, IBl = 30 mAde)
Turn-Off Time
(VCC = 25 Vde, IC = 300 mAde, IB1 = IB2 = 30 mAde)
(1) Pulse Test: Pulse Width"" 300 !,-s, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-109
MHz
•
2N3307
2N3308
CASE 20-03, STYLE 10
TO·72 (TO-206AF)
I
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
2N3307
2N3308
Unit
VCEO
35
25
Vde
Vde
Vde
Collector-Emitter Voltage
VCES
40
30
Collector-Base Voltage
VCBO
40
30
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
200
1.14
mW
mWrC
Total Device Dissipation @ TC = 25·C
Derate above 25·C
Po
300
1.71
mW
mWrC
TJ, Tstg
-65 to +200
·C
Collector Current -
•
Symbol
Continuous
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA =
3 Collector
~'".,
..:..
'"
4
GENERAL PURPOSE
TRANSISTORS
PNP SILICON
25·C unless otherwise noted.)
Characteristic
Symbol
Max
Min
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IIc = 2.0 mAde, 18 = 0)
Collector-Emitter Breakdown Voltage
IIc = 10 pAde, VBE = 0)
Collector-Base Breakdown Voltage(1)
IIc = 10 pAde, IE = 0)
V(BR)CEO
2N3307
2N3308
2N3307
2N3308
-
40
30
V(BR)EBO
ICBO
2N3307
Vde
-
V(BR)C80
2N3307
2N3308
Vde
-
V(BR)CES
Emitter-Base Breakdown Voltage
liE = 10 pAde, IC = 0)
Collector Cutoff Current
(VCB = 15 Vde)
(VC8 = 15 Vde, T = 150·C)
-
35
25
40
30
-
3.0
-
Vde
Vde
pAde
-
0.010
3.0
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vde, IC = 2.0 mAde)
-
hFE
2N3307
2N3308
40
25
250
250
Collector-Emitter Saturation Voltage
IIc = 3.0 mAde, 18 = 0.6 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage
IIc = 3.0 mAde, 18 = 0.6 mAde
VBE(sat)
-
1.0
Vde
1200
MHz
SMALL-5IGNAL CHARACTERISTICS
t,-
Current-Gain - Bandwidth Product
(VCE = 10 Vde, IC = 2.0 mAde, I = 100 MHz
Maximum Frequency 01 Operation
(VCE = 10 Vde, IC = 2.0 mAde)
Output Capacitance
(VCB = 10 Vde, IE = 0, 1= 0.1 MHz
Small-Signal Current Gain
(VCE = 10 Vde, IC = 2.0 mAde, I = 1 kHz)
Collector Base Time Constant
(VCB = 10 Vde, IC = 2.0 mAde, 1= 31.8 MHz)
300
Typical
2000
Imax
Cobo
2N3307
2N3308
-
MHz
pF
-
1.3
1.6
40
25
250
250
2.0
2.0
15
20
-
hIe
2N3307
2N3308
rb'C e
2N3307
2N3308
ps
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-110
2N3307, 2N3308
ELECTRICAL CHARACTERISTICS (continued) (TA = 2S·C unless otherwise noted)
Symbol
Characteristic
Min
NF
Noise Figure
(VCE = 10 Vdc, IC = 2.0 mAde, I = 200 MHz)
Unit
dB
-
2N3307
2N3308
Max
-
4.5
6.0
17
-
-
0
SWrrCHING CHARACTERISTICS
Ge
Power Gain(2)
(VCE = 10 Vdc, IC = 2.0 mAde, I = 200 MHz)
Ge
Power Gain (AGC)(2)
(VCE = 5.0 Vdc, IC = 20 mAde, I = 200 MHz)
2N3307
2N3308
FIGURE 1 - COMMON EMrrTER AVERAGE SMALL POWER
GAIN & NOISE FIGURE versus COLLECTOR CURRENT
-
-2 mAde operation.
NOISE FIGURE versus FREQUENCY
5
Vcf=-l0 Ydc
f =200 MHz
5
1-0=
01'
5
-
- - TUNED AT Ie" -2 mAde ONLY
TUNED AT EACH TEST CURRENT
"'",
4
... .....
-
0
0
-2
-4
-6
-8
NF
I'~ ~'-.
~~
5
o
=
FIGURE 2 -
0
-5
dB
-
(1) Cabo is measured in guarded circuit such that the can capacitance IS not mcluded.
(2) AGC is obtained by increasing IC. The circuit remains adjusted lor VCE = -10 Vde, IC
dB
-10
"""
12
"-
-14
Ie. COLLECTOR CURRENT (mAdel
~ ......
r--
----
II
VCE - -15Vdc-
Ve,= -5Vdc
3
~
2
'-.
"- ~.
-16
Ie :=-2 mAde
RG _50 ohms
'"
1
"
-18
0
20
-20
30
50
70
100
f. FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-111
200
300
500
•
2N3425
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Emitter Voltage
VCER
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VESO
5.0
Rating
•
Unit
Vde
One Die
Both Die
Emitter 3
5 Emitter
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
0.3
1.72
0.4
2.28
Watt
mWfC
DUAL
AMPLIFIER TRANSISTORS
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
PD
0.75
4.3
1.5
8.55
Watts
mWfC
NPN SILICON
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
°c
Refer to MD2369,A,B for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(lC
VCER(sus)
20
-
Vde
Collector-Emitter Sustaining Voltage(1)
(lc
VCEO(sus)
15
Vde
V(BR)CBO
40
VIBRIEBO
5.0
-
= 30 mAde, RSE '" 10 ohms)
= 10 mAde, IB = 0)
Collector-Base Breakdown Voltage (lC = 10 pAde, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 pAde, IC = 0)
Collector Cutoff Cu rrent (VCE = 20 Vde, VEBloffl = 0.25 Vde, TA = 125°C)
Collector Cutoff Current (VCS = 20 Vde, IE = 0)
(VCB = 20 VDe, IE = 0, TA = 150°C)
Emitter Cutoff Current (VEB = 4.0 Vde, IC = 0)
Vde
Vde
15
pAde
ICBO
-
0.025
15
pAde
lEBO
-
0.2
pAde
hFE
12
30
12
120
-
0.4
0.5
VBE(sat)
0.7
0.85
0.9
tr
300
ICEX
ON CHARACTERISTICS
DC Current Gain
(lC
(lc
(lC
= 0.5 mAde, VCE = 1.0 Vde)
= 10 mAde, VCE = 1.0 Vde)
= 10 mAde, VCE = 1.0 Vde, TA =
-55°C)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IS = 1.0 mAde)
(lC = 7.0 mAde, IS = 0.7 mAde, TA
Base-Emitter Saturation Voltage
VCE(sat)
= - 55°C to + 125°C)
= 10 mAde, IS = 1.0 mAde)
= 7.0 mAde, IS = 0.7 mAde, TA =
(lC
(lC
-55°C)
-
-
-
-
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(lc
= 20
mAde, VCE
=
10 Vde, f
=
100 MHz)
(VCB = 10 Vde, IE = 0, f = 140 kHz)
(VBE
= 0.5 Vde,
Small-Signal Current Gain
IC = 0, f
=
(lc = 10 mAde, VCE
Real Part of Input Impedance
(lc
=
140 kHz)
=
10 mAde, VCE
1.0 Vde, f = 1.0 kHz)
=
10 Vde, f
= 300 MHz)
-
MHz
Cibo
-
hfe
20
-
-
Re(hie)
-
50
Ohms
ts
-
40
ns
ton
-
50
ns
toff
-
90
ns
Cobo
6.0
pF
9.0
pF
SWITCHING CHARACTERISTICS
Storage Time
(lC = 10 mAde, IB1 = 10 mAde, IS2 = 10 mAde)
Turn-On Time
(VCC = 3.0 Vde, VEB(off)
= 2.0 Vde, IC = 10 mAde, IBl = 3.0 mAde)
Turn-Off Time
(VCC = 3.0 Vde, IC = 10 mAde, IB1
= 3.0
mAde, IB2 = 1.0 mAde)
(1) Pulse Test: Pulse Width", 300 JJ-S, Duty Cycle'" U)%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-112
MAXIMUM RATINGS
PNP
Rating
Symbol
NPN
NPN
2N5415 2N5416 2N3439
2N3440
Unit
Collector-Emitter Voltage
VCEO
200
300
350
250
Vde
Collector-Base Voltage
VCBO
200
350
450
300
Vde
Emitter-Base Voltage
VEBO
4.0
6.0
7.0
7.0
Vde
Base Current
18
0.5
Ade
Collector CurrentContinuous
IC
1.0
Ade
Total Device Dissipation
@TA ~ 25°C
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Total Device Dissipation
@TA=50°C
Derate above 50°C
Po
Operating and Storage
Junction Temperature
Range
TJ, Tstg
2N3439
2N3440
..
PNP
2N5415
2N5416
~()- :~', Emitter
-
1.0
5.7
Watts
mWrC
10
57
5.0
28.6
Watts
mWrC
-
1.0
6.7
1 Emitter
JAN. JTX. JTXV AVAILABLE
CASE 79-04. STYLE 1
TO-39 (TO-205AD)
Watts
mWrC
-65 to +200
°c
HIGH VOLTAGE AMPLIFIERS
THERMAL CHARACTERISTICS
Symbol
2N5415
2N5416
2N3439
2N3440
Unit
Thermal Resistance, Junction to Case
R9JC
17.5
35
°CIW
Thermal Resistance, Junction to Ambient
R9JA
150
175
°CIW
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(1)
(lc = 50 mAde, IB = 0)
VCEO(sus)
2N5415
2N5416
2N3439
2N3440
"Collector Cutoff Current
(VCE = 300 Vde, IB = 0)
(VCE = 200 Vde, IB = 0)
2N3439
2N3440
"Collector Cutoff Current
(VCE = 450 Vde, VBE = 1.5 Vde)
(VCE = 300 Vde, VBE = 1.5 Vde)
2N3439
2N3440
Collector Cutoff Current
(VCB = 175 Vde, IE =
(VCB = 280 Vde, IE =
(VCB = 360 Vde, IE =
(VCB = 250 Vde, IE =
2N5415
2N5416
2N3439
2N3440
200
300
350
250
ICEO
ICEX
ICBO
0)
0)
0)
0)
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
(VEB = 6.0 Vde, IC = 0)
lEBO
Vde
-
pAde
-
20
50
-
500
500
pAde
-
2N5415
2N5416, 2N3439, 2N3440
-
-
pAde
50
50
20
20
pAde
20
20
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 2.0 mAde, VCE = 10 Vde)
<(lC = 20 mAde, VCE = 10 Vde)
<(lc = 50 mAde, VCE = 10 Vde)
hFE
-
2N3439
2N3439, 2N3440
30
40
160
2N5415
2N5416
30
30
150
120
Collector-Emitter Saturation Voltage
(lC = 50 mAde, IB = 4.0 mAde)
2N3439, 2N3440
Base-Emitter Saturation Voltage
(lC = 50 mAde, IB = 4.0 mAde)
2N3439, 2N3440
VCE(sat)
VBE(sat)
-
"Indicates Data in Addition to JEDEC Requirements.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-113
-
0.5
Vde
1.3
Vde
•
2N3439, 2N3440 NPN 12N5415, 2N5416 PNP
ELECTRICAL CHARACTERISTICS
(continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
tr
15
-
MHz
-
15
10
Cibo
-
75
pF
hfe
25
-
-
Re(hie)
-
300
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE' = 10 Vdc, f = 5.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VEB = 5.0 Vdc, IC
= 0, f =
1.0 MHz)
2N3439, 2N3440
pF
Cobo
2N5415,2N5416,
2N3439, 2N3440
Small-Signal Current Gain
(lC = 5.0 mAde, VCE = '10 Vdc, f = 1.0 kHz)
(IC = 10.0 mAde, VCE = 10 Vdc, f = 5.0 MHz)
Real Part of Input Impedance
(VCE = 10 Vdc, IC = 5.0 mAde, f
=
2N5415,2N5416
1.0 MHz)
Ohms
(1) Pulse Test: Pulse Width", 300 I'-s, Duty Cycle'" 2.0%.
CAUTION: The sustaining voltage must not be measured on a curve tracer. (See Fig. 15.)
•
Ftt
,npUI
a
FIGURE 1 -
SWITCHING TIMES TEST CIRCUIT
v,
NOTE: Vee and RC adjusted for VCE(off):::: 150 V and Ie
as desired,AS chosen for desired 181,
:::::::s10 V, V2 ~8.0 V
V,
--
(e-l_--""""........+--I
For td and t r • 01 is disconnected
and V2::: 2.0 V
V1
For PNP test circuit,
reverse all polarities.
I
PNP
2N5415,2N5416
FIGURE 2 -
1000
,,@VeE(olf)- 150 V
.... '
300
,
200
]
~ 100
;:, 70
50
3D
20
r-
'=' h!:
'
................
=~
....
.......
2000
~-
200
I--
100
............
of
o~
30
10
----
...............
....
.... r-.
I.'@
I~/I~ ='5.J to lO- r-r-
.......
'""-....
.....
I
I
~
-
.......
r--
-I-.
20
30
50
70
IC, COLLECTOR CURRENT (rnA)
10
TURN-OFF TIME
3000
1000
700
--
k-:-- 'f@ VCE(off} • 150 V
~ 300
;::.200
...............
'
30
10
200
...
.........
---I
....
--
-
--
..,.-'"
./
-'
Iclla - 5.0
leila' 10
lal la2
TJ·250C
30
70
20
50
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-114
200
,s@ Iclla • 5.0 10 10
]500
lella·5.0
leila' 10
lal'Ia2
TJ' 25°C
100
I I I )11
2000
100
70
50
100
T
I
.....
20
3D
50
70
IC. COLLECTOR CURRENT (mA)
Id@ VaE(olf) = 2.0 V
10
200
,
;~
..........
100
....'
.......
20
f: If@VCEi"ff} • 150 V
'r-.....
.......
"'" .....,
o-
..........
.....
20
70
3D
50
IC, COLLECTOR CURRENT (rnA)
~""'=
.........
~300
==
"""'-CL
..... j
~ 100
.... 70
..........
500
..
..........
!200
FIGURE 3 -
]
......... -
=
-= =
IcllB 5.0
ICIIB 10
T) 25 0C- -
1,@VCE(olf) = 150 V
50
.......
iii vai(OIf)' 2'1 V
3000
1000
700
500
300
I'"
- r
10
10
1000
700
Ic/la = 10
TJ = 25 0C- f-----
'-):::
i'-..
TURN-ON TIME
=~
Ic/la =5.0
700
500
NPN
2N3439, 2N3440
100
200
2N3439, 2N3440 NPN 12N5415, 2N5416 PNP
FIGURE 4 -
CURRENT-GAIN -
FIGURE 5 -
BANDWIDTH PRODUCT
-;;100
:z:
~
t;
70
=>
c
c
0
...
a:
I-- II-- I-
30
~
,:,
20
:c
~
z
V
W
...
..
1\
3.0
5.0
~
...z
...
;;
...~
\
-r--
1\
7.0 10
20
30
50
IC. COLLECTOR CURRENT (mA)
70
~
Cib
70
50
W
<[
\
- - NPN
- - - PNP
10
2.0
.t'
100
~'
a:
a:
=>
~
.- I-"'"
-
~
IT~-
200
VCP IOV
TJ' 25°C
V
~
~
CAPACITANCE
300
1\
FIGURE 6 -
--
10
3.0
0.2
200
100
20 ~
7.0
5.0
-
k!! t-
30
r--.....
PNP (MJ5415. MJ5416)
II
III~~~ (2N34139. ~N~4~)
0.5
"
5.0
10
20
1.0
2.0
VR. REVERSE VOLTAGE (VOLTS)
50
100
200
THERMAL RESPONSE
1.0
:;(
0.7
'"
O. 5
0: _
We
~ ~ 0.3
... :::;
z <[ 0.2
W'"
0;0:
<:0
:~
=
o.,-
~ ~ 0.07
>2
;::: ~ 0.05
~O 0.5
..-
0.2
!---
0.1
[ruL
b:= ~F==
~
0.05
t~1
12---1
0.01
DUTY CYCLE. D 1lI12
~~
tt ~ 0.03 ,.,0.02
0.0 1
0.01
SINGLE
PULSE
8JC(I) = r(t) 8JC
'D CURVES APPLY FO R POWER
PULSE TRAIN SHOWN
READ TIME AT 11
TJ(pk) TC P(pk) OJC(I)
"""" 0 1- °ISii°'rrljl
I III
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
200
100
300
500
1000
I. TIME (m.)
FIGURE 7 PNP -
O. 3
~
O. 2
00~s~50",'r-
~
O. 1 :ii~
~ 0.07
0:
j
"
.........
-
0:
NPN - 2N3439. 2N3440
2N5415. 2N5416
1. 0
O. 7
iL O.5
~
ACTIVE-REGION SAFE OPERATING AREA
0.05
80.03
Eo.o2
'\."
de
TJ = 200°C
BONDING WIRE LIMITED
"
THERMALLY LIMITED
@Te = 250C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
2N5415 -
~.t.rs
I II I I I
1. 0
10",
O. 7
~ O.5
\.~'" - -
~
,
~ O.3
~ O. 2
.0 m'l\.
Ir..
~
'.
0.1
.....
..... .....
.....
....
-
I ....
r-.
.....
..,g0.05
.,
TJ 2000C
.....
----- BONDING WIRE LIMITED
- - - THERMALLY LIMITED
@Te = 25°C (SINGLE PULSE)
0.02
CURVES APPLY BELOW
2N3440 ~
RATED VCEO
2N3439
0.0 1
5.0 7.0 10
20
30
50 70 100
200 300
VCE. CDLLECTDR·EMITTER VOLTAGE (VOLTS)
I"\,
~O.O 3
t- '\:
10
20
30
50 70 100
200
VCE. COLLECTOR·EMITTER VOLTAGE (V(L TS)
,
...
~ 0.0 7
.....
!-+
2N5416
0.0 1
5.0 7.0
de~
.....
~
:3...
10
500", ~ 50",
5.0m'l'-. tOms"
100"," ..
300
500
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-115
500
2N3439, 2N3440 NPN / 2N5415, 2N5416 PNP
FIGURE 8 10
"-
"'" l".- I'--
~ 8.0
~
'"06.0
~
iii
.........
4.0
...........
ci 2.0 _
2N3439.2N3440
Q
a:
POWER DERATING
.~
I
I
o
o
There are two limitations on the power handling ability of a
transistor, average junction temperature and second breakdown.
/
Safe operating area curves indicate Ie-VeE limits of the transistor
that must be observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves indicate .
The data of Figure 7 is based on TJ(pkl = 200°C; TC is variable
depending on conditions. Second breakdown pulse I imits are valid
for duty cycles to 10% provided TJ(pkl<;2000C. TJ(pkl may be
~
r----...
I
40
MJ~416
r-....
/ I -"-
'"
MJ54115.
V
"
"" -....
. . . r-......
80
120
TC. CASE TEMPERATURE (OCI
calculated from the data in Figure 6. At high case temperatures,
thermal limitations will reduce the power that can be handled to
values less than the limitations imposed by second breakdown .
"
(See AN-4151.
~
200
160
I
PNP
2N5415.2N5416
FIGURE 9 -
NPN
2N3439 2N3440
DC CURRENT GAIN
200
300
200
TJ = 150°C
100
70
z
<
250 C
50
'"
z
.'"
~
0Z
30
'"
0:
a:
-
20
~
u
u
CI
~
1
N
-55°C
~
10
7.0
5.0
<
to
0-
il'i
a
<>
llii --~CE ~
3.0
~
2.0
0.5
1~ ~olltsl
1.0
2.0
5.0
10
20
50
100
200
.~
~
~ 1-''''''
10
\"T
.\
VCE 2.0 VOLTS
3.0
0.5
500
~.
...,.,
30
20
7.0
5.0
I II I
IIII
25°C
c
VCE = 2.0 Yolts
""
~
100
70
50
a:
a:
~~
11!;~ooc
VCEI-l0ITJ~
IIIII
1.0
2.0
5.0
10
20
50
100
200
500
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
FIGURE 10 - COLLECTOR SATURATION REGION
1.0
"'-""""'''ITTI,TTT
IIII
llil"II,--,,-,-.-rTTTTTl
r--+-+~~II~III~-+-+~~~II.~++-~~~~~
I III
1111
IJI n
2.0
"TT""O--.-.rTTTl
~
~
>
0:
iii
0.4
0.2
1\
-'
0
w
>
~ 0.8 I-ai:
I-o
\
0-
I'
~
I"
u
u
\
~
ai:
0.2
0.5
1.0
2.0
5.0
10
lB. BASE CURRENT (mAl
o. 4
8
r"'" to0
0.1
IC =
10mA
50
>
100
0.1
,
~
:'"
~
I-- """'100.2
0.5
1\ 200 mA
f\
"""" "-
~I-
1.0
2.0
5.0
10
lB. 8ASE CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-116
100mA
1\ 50mA
20mA
~ 0
20
"\
1.2
a:
0
0-
~
\
\
'"to
i5
\TTTlT
TJ = 25°C
\
~ 1.6
1~c~t_-t-t-t12-+.~+mIttl~.IHf-+Jo-m+A1-tH-+ll+.~~ttll~t-A-+t+r--+~L20-+.~-+~A-+.I++H
~
\
\
20
50
100
2N3439, 2N3440 NPN / 2N5415, 2N5416 PNP
FIGURE 11 -
"ON" VOLTAGES
1. 0
1.0
TJ = 25°C
~
-
:;;.-~
.I. . 1
VSE( ..,) i' le/ls = 10
.1.11
o.S
III
...J
I j
C
~
w
'"C~
C
>
>-
o.6
O.S
~
c3
I
VSE i' VeE = 10 V
o. 4
7.0
10
20
30
50
70
100
~:....r-
VCE(",)
leliB = 5.0
300
500
3.0
5.0
10
FIGURE 12 +0.8
~
~
r-r--
+0.8
I
25 0C 10 lS0 0C
100
200
..
r-- _
"'
./
2S0C 10 1500C
J.oI""
-"""I:~
'evc for VCE(,,!)
-SSJc 10 2SoC-
I-
i:5
u
-0.4
8
-0.8
.
-1.2
~
-1.6
$ -0.4
:sloc to 2S oC-
8
w
w
+0.4
.5
I--
0
~
'"w
50
1
r- 'APPLIES F~R IIC(I~ ~ ~FE/S
G
3;
i:5
'"~
30
TEMPERATURE COEFFICIENTS
II
II
'APPLIES FOR ICIIB < hFE/S
'OVC FOR VCE(,,!)
20
IC. COLLECTOR CURRENT (rnA)
Ie. COLLECTOR CURRENT (rnA)
~ +0.4
leIlB=5.0
I
2.0
,/
leliB = 10
0.2
200
/
o
>
o
5.0
/
!:i 0.4
o
I-"'"
VBE@VCE= 10 V
/
..- ~
lellB = 10
VeE( ..!)
k-
V
0.6
..
I
V
0.2
- tBE(~at) I@IC/IB = 10
~
w
to
/
I
1/
TJ=250C
.....::
r--
-
.... f--t-"
OVIB FORIVBE
I-
:> -2.0
(t)
2.0
3.0
S.O 7.0
10
20
50
30
70
100
~
-0. 8
:::>
j
-1.2
1liI-
-1.6
~
-2.0
2.0
200
3.0
5.0 7.0
IC. COLLECTOR CURRENT (rnA)
-
......
~ I-""
eVB for VBE
10
20
30
SO
70
100
200
IC. COLLECTOR CURRENT (IIA)
AGURE 13 -
COLLECTOR CUTOFF REGION
105
f--
-
VCE = 200 V
r--- -TJ
,
./
1500C
VCE
-
200V
-TJ= 1500C
1000C
LL
./
1000C
1
L
25 0C
10- 1
~
+0.4
+0.3
25°C
~
FOR~ARO
REV1ERSE
.= ~
F~RWA'T=
REVfRSE
10- 1
+0.2
+0.1
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.&
-0.4
-0.3
-0.2
-0.1
+0.1
+0.2
+0.3
VBE. BASE·EMITTER VOLTAGE (VOLTS)
VBE. BASE·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-117
+0.4
+0.5 +0.&
2N3439, 2N3440 NPN / 2N5415, 2N5416 PNP
FIGURE 14 -
BASE CUTOFF REGION
104
103
104
t--
TJ
= 150 0 C
I - - TJ = 1500C
VCe=200V-
IOOoC
lOOoC
.....
1102
ffi
ex:
ex:
aw 10I
I
~
25 0 C
25 0 C
IE 100
~ ~ REYERSE
10- I
+0.4
+0.3
+0.2
+0.1
FORfARO
-0.1
-0.2
-ll.3
-ll.4
~ ~REVrRSE
~
-0.5
10-1
-0.4
-ll.6
FIGURE 15 -
-0.3
-ll.2
FOR~ARO
-0.1
+0.1
CIRCUIT USED TO MEASURE SUSTAINING VOLTAGES
25mH
VCC (0 to 50 V,
100 rnA)
TUT
VCED
Channel B
(sus)
_III~+------~~~~------O
6.0V
+0.2
+0.3
+0.4
VSE, SASE·EMITTER VOLTAGE (VOLTS)
VSE, SASE· EMITTER VOLTAGE (VOLTS)
•
VCE=200V-
To
Oscilloscope
1.011
0.5W
Common
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-118
~
+0.5
+0.6
2N3444
For Specifications, See 2N3252 Data.
2N3467
2N3468
MAXIMUM RATINGS
Symbol
2N3467
2N3468
Unit
Collector-Emitter Voltage
Rating
VCEO
40
50
Vde
Collector-Base Voltage
VCBO
40
50
Vde
Emitter-Base Voltage
VEBO
5.0
IC
1.0
Ade
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
5.71
Watt
mWrC
Total Device Dissipation @ T C = 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
JAN, JTX, JTXV AVAILABLE
CASE 79-04, STYLE 1
TO-39 (TO-20SAD)
Vde
3 Collector
"~{Q
"
1 EmItter
SWITCHING TRANSISTORS
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
R8JC
35
'CIW
Thermal Resistance, Junction to Ambient
ReJA
0.175
'C/mW
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
-
40
50
-
5.0
-
Vde
IBEV
-
120
nAde
ICEX
-
100
nAde
-
0.10
15
V(BR)CBO
V(BR)EBO
= 3.0 Vde)
Collector Cutoff Current
(VCE = -30 Vde, VBE
= 3.0 Vde)
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
40
50
2N3467
2N3468
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Base Cutoff Current
(VCE = - 30 Vde, VBE
ICBO
=
Vde
V(BR)CEO
2N3467
2N3468
100'C)
Vde
pAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 150 mAde, VCE
(lC
=
500 mAde, VCE
(lC
=
1.0 Ade, VCE
=
1.0 Vde)
2N3467
2N3468
40
25
-
=
1.0 Vde)
2N3467
2N3468
40
25
120
75
2N3467
2N3468
40
20
-
5.0 Vde)
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC
=
500 mAde, IB
(lC
=
1.0 Ade, IB
=
-
hFE
=
VCE(sat)
2N3467
2N3468
Vde
-
= 50 mAde)
2N3467
2N3468
-
100 mAde)
2N3467
2N3468
-
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VBE(sat)
0.3
0.36
0.5
0.6
-
1.0
1.2
-
1.0
1.2
1.6
Vde
0.8
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-119
-
•
2N3467,2N3468
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
175
150
-
Cobo
-
25
pF
Cibo
-
100
pF
td
-
SMALL-SIGNAL CHARACTERISTICS
t,.
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC
= 0, f =
100 kHz)
MHz
2N3467
2N3468
SWITCHING CHARACTERISTICS
Rise Time
(lC = 500 rnA, IB1 = 50 rnA. VBE
2.0 V, VCC = 30 V)
Storage Time
(lC
Delay Time
•
=
10
ns
30
ns
60
ns
ts
-
Fall Time
tf
-
30
ns
Total Control Charge
(lC = 500 rnA, IB = 50 rnA, VCC
OT
-
6.0
nC
=
500 rnA, IB1
=
=
IB2
=
tr
50 rnA, VCC
= 30 V)
30 V)
(1) Pulse Test: PW", 300 ,..,s, Duty Cycle'" 2.0% .
STORAGE TIME VARIATION WITH TEMPERATURE
FIGURE 1 200
I
.~ I
.I
\.!
Ic= 101 11 = 10112
Vee = 30V
- - T,=25°C
- - - T, = 125°C
.. 100
;::
....
'-<"'
'"
0
:;;
:.:
I I I
-
oS
....
:;
......
70
13,1- 10,20
"'1 .1
13,'= \0 ~
50
~
1l,1=~?~
30
I I
t's=ts-lfBt,
II
20
50
70
100
FIGURE 2 -
1.6
500
200
300
Ie, COLLECTOR CURRENT (mAl
700
LIMITS OF SATURATION VOLTAGE
III
1.4
;;;~
0
~
~
~
li
I1.2 l -
{l.=IO
T, = 250 C
1.0
0.8
1000
-
f-'
MAX
~
I
MIN
~
r-
=> 0.6
~
-,-
MAX V,,,.
10.4
--::: ;:'-1"'"
:-
0.2
50
70
100
200
".
;-
I
2N3468 V
I-
~
VnlNt
-
i""'"
,/
.....
./
.....
./
2N3467
300
500
700
1000
Ie, COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-120
2N3467, 2N3468
FIGURE 3 -
MINIMUM CURRENT GAIN CHARACTERISTICS
2N3467
-
70
f-50
-
TJ
.-
f--
__ -
",
TJ
25°C
_
-1---
--
I-
TJ
fo-
125°C
'-r-
1--
f--
--
f--
r--
f- :::-:::.....
-
f- _
- -- -
Ve•
Veo
IV
2V
'\.
~
'"
= _55°C
,-
2134J7 _
... ........
I": ~~ I' \
'\ "~, \
-",
,
\
~ i'~\
"
\ ~\
!~ l\'\ ~
10
50
100
70
200
300
700
500
1000
Ie. COLLECTOR CURRENT (mAl
2N3468
70
2NI346J _
V",=IV
- - - V",=2V
50
-- -
1--
-
- -, --- -- --
-
TJ = 125°C
~~=':~C_ _
f--
~
70
100
300
200
Ie. COLLECTOR CURRENT (mAl
"- \
" ,"
~
'\
-......:: "" \
500
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-121
......
~
10
50
........
-
-- -- -- --TJ = -55°C
-- - - -
-~ ~
"
~
~
"
........
700
'\
1000
2N3485,Al2N3486,A
For Specifications, See 2N2904,A Data.
2N3494
2N3495
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
2N3494
2N3496
2N3495
2N3497
Unit
Collector-Emitter Voltage
VCEO
80
120
Vde
Collector-Base Voltage
VCBO
80
120
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
100
mAde
Rating
Collector Current -
Continuous
2N3494
2N3495
2N3496
2N3497
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
600
3.43
400
2.28
mW
mWfC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C'
Po
3.0
17.2
1.2
6.85
Watts
mWfC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
°c
3 Collector
2N3496
2N3497
..:..~
1 Emlller
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTORS
PNP SILICON
'Indicates Data in addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS
"
ITA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltagell)
IIc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
IIc = 10 pAde, IE = 0)
V(BR)CEO
2N3494, 2N3496
2N3495, 2N3497
4.5
-
-
-
100
100
-
25
VIBR)CBO
2N3494, 2N3496
2N3495, 2N3497
Emitter-Base Breakdown Voltage
liE = 10 pAde, IC = 0)
Collector Cutoff Current
IVCB = 50 Vde, IE = 0)
IVCB = 90 Vde, IE = 0)
80
120
-
80
120
VIBR)EBO
Emitter Cutoff Current
IVBE = 3.0 Vde, IC = 0)
lEBO
Vde
Vde
nAde
ICBO
2N3494, 2N3496
2N3495, 2N3497
Vde
nAde
ON CHARACTERISTICS
DC Current Gainll)
IIc = 100 pAde, VCE = 10 Vde)
IIc = 1.0 mAde, VCE = 10 Vde)
IIc = 10 mAde, VCE = 10 Vde)
IIc = 50 mAde, VCE = 10 Vde)
IIc = 100 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage
IIc = 10 mAde, IB = 1.0 mAde)
hFE
35
40
40
40
35
2N3494, 2N3496
VCE(sat)
2N3494, 2N3496
2N3495, 2N3497
Base-Emitter Saturation Voltage
IIc = 10 mAde, IB = 1.0 mAde)
VBElsat)
-
-
-
Vde
-
-
0.3
0.35
0.6
0.9
200
150
-
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Productl2)
IIc = 20 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
IVCB = 10 Vde, IE = 0, f = 100 kHz)
Input Capacitance
IVBE = 2.0 Vde, IC
t,.
2N3494, 2N3496
2N3495, 2N3497
Cobo
2N3494, 2N3496
2N3495, 2N3497
Cibo
=
pF
-
0, f = 100 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-122
MHz
7.0
6.0
30
pF
2N3494 thru 2N3497
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Input Impedance
(lC = 10mAdc,VCE = 10Vdc,1 = 1.0 kHz)
hie
0.1
1.2
k ohms
Voltage Feedback Ratio
(lC = 10 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
h re
-
2.0
X 10-4
Small-Signal Current Gain
(lC = 10 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
hie
40
300
-
Output Admittance
(lC = 10 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
hoe
-
300
/Lmhos
Re(hie)
-
30
Ohms
Turn-On Time
(VCC = 30 Vdc, IC = 10 mAdc, ISl = 1.0 mAdc)
ton
-
300
ns
Turn-Off Time
(VCC = 30 Vdc, IC = 10 mAdc, ISl = IS2 = 1.0 mAdc)
toff
-
1000
ns
Real Part 01 Input Impedance
(lc = 20 mAdc, VCE = 10 Vdc, I = 300 MHz)
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse Width", 300 1-'8, Duty Cycle = 2.0%.
(2) fJ is delined as the Irequency at which Ihlel extrapolates to unity.
FIGURE 1 - TURN·ON TIME TEST CIRCUIT
FIGURE 2 - TURN·OFF TIME TEST CIRCUIT
12li
-30 VO----'\/IA-..,
:JfE'
I
;*~ C, < 3 0 pF
,
10 k
-+91
-1O~" ~
__ ...J
tr,.;;10ns
10",
DUTY CYCLE < 2.0%
I
10k
;~~C,<3.0pF
13
__ ..J1
10.us~t1";;500J.ls
,,<
-30 V 0---'1111/1,----,
3.0 k
lN91S
t2 ~ 10 ns
ta;;a,1.0ms
DUTY CYCLE < 10%
FIGURE 3 - VCE (sat) versus IC
FIGURE 4 - ICBO versus TA
S
;::;-0.5
to
!:l
~-O.4
f-
IC = 10 NOTE 1
IS
1E
Ii'
a
o
tt
~
~ -0.3
TA
T~
EO
~
TA
~ -0.2
125c C
25c
H
-55~C
-10
~
0:
~
-1
_ VCS= -40 V
_VCS=-50V
:::
1'l
't3"
~ -0.1
VCB=-70V
0
~
~ -0.1
_VCS=-SOV
1'l
[{j
$'
0
-10
-01
-001
-10
-100
'C-COLLECTOR CURRENT (mAl
0
25
FIGURE 5 - hFE versus IC
o
!;i
0:
0:
i
IIIUn'
IIIIJII
~
~ 120
to
~
'\
:>
~
1111111
40
o
:0.1
'"
~
)-'1 jj
I--'
I J..l.H
TA = 125 cC
NOTE 1: THESE PARAMETERS WERE
MEASURED USING PULSE
TECHNIQUES. tw = 300 1".
DUTY CYCLE <; 2%.
1111I
IC = 10 NOTE 1
11111111
-1.0
-0.4
~ -0.2
TIIIIIII
II 11111
II 11111
TA = 25 cC
c
c
~
175
z
~
~ 6.0
if 150
:J:
iz
125
c
100
:ii
z
;;;:
75
to
50
..i
25
<3
~
'"g
8
VCE= lOV
1= 100 MHz
TA = 25°C
V1.0
•
~ 4.0
/
IE= 0 V
1- 1.0 MHz
2.0
~A ~ 2;5~11
NOTE 211
-0.4
5.0 10
50 100
Ic-collECTOR CURRENT (rnA)
FIGURE 9 -
-1.0
-5.0 -10
-50 -100
VCB-COLLECTOR·BASE VOLTAGE (V)
CIBO versus VEB
30
" "-
~ 24
~
z
;$ 18
13
i'co:1:
<.J
~
;;::
g
cr
12
IC = 0 V
1-1.0 MHz
Tf =;
r-....
2~t~ I
INOTE211
-0.1
-1.0
-10
VEB-EMITTER·BASE VOLTAGE (V)
-100
NOTE 2: CAPACITANCE MEASURE MAOE WITH TO·18 PACKAGE.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-124
2N3498 thru 2N3501
MAXIMUM RATINGS
Symbol
Rating
2N3498 2N3500
2N3499 2N3501
JAN, JTX, JTXV AVAILABLE
CASE 79-04, STYLE 1
TO-39 (TO·205AD)
Unit
Collector-Emitter Voltage
VCEO
100
150
Vde
Collector-Base Voltage
VCBO
100
150
Vde
Emitter-Base Voltage
VEBO
300
mAde
Collector Current -
Continuous
IC
Total Oeviee Dissipation @ TA
Derate above 25'C
~
Total Device Dissipation @ TC
Derate above 25'C
~
Po
25'C
Po
25'C
Operating and Storage Junction
Temperature Range
TJ, Tstg
Vde
6.0
500
1.0
5.71
mWrC
5.0
28.6
mWrC
-65 to +200
'c
, fi1 "~~"~o,
~I[
Watt
Watts
1 Emllte,
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RIIJC
35
'CIW
Thermal Resistance, Junction to Ambient
RIIJA
175
'CIW
Characteristic
ELECTRICAL CHARACTERISTICS (TA
..
NPN SILICON
~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
-
Max
Unit
OFF CHARACTERIST1CS
Collector-Emitter Breakdown Voltage (1)
(IC ~ 10 mAde, IB ~ 0)
2N3498, 2N3499
2N3500, 2N3501
V(BR)CEO
100
150
Collector-Base Breakdown Voltage
(lC ~ 10 pAde, IE ~ 0)
2N3498, 2N3499
2N3500, 2N3501
V(BR)CBO
100
150
V(BR)EBO
6.0
Emitter-Base Breakdown Voltage
(IE ~ 10 pAde, IC ~ 0)
Collector Cutoff Current
(VCB ~ 50 Vde, IE ~ 0)
(VCB ~ 50 Vde, IE ~ 0, TA
(VCB = 75 Vde, IE = 0)
(VCB = 75 Vde, IE ~ 0, TA
ICBO
2N3498, 2N3499
=
2N3500, 2N3501
=
150'C)
Emitter Cutoff Current
(VBE(off) ~ 4.0 Vde, IC ~ 0)
lEBO
-
Vde
-
-
Vde
Vde
-
pAde
-
-
-
-
-
-
-
-
120
300
-
-
-
-
150'C)
-
0.050
50
0.050
50
25
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE
hFE
=
10 Vde)
2N3498, 2N3500
2N3499, 2N3501
20
35
(lC
=
1.0 mAde, VCE
=
10 Vde)
2N3498, 2N3500
2N3499, 2N3501
25
50
(lC
=
10 mAde, VCE
=
10 Vde)
2N3498, 2N3500
2N3499, 2N3501
35
75
(IC
=
150 mAde, VCE
=
10 Vde)
2N3498, 2N3500
2N3499, 2N3501
40
100
(lC
= 300 mAde, VCE =
10 Vde)
2N3500
2N3501
15
20
(lC
= 500 mAde, VCE =
10 Vde)
2N3498
2N3499
15
20
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 150 mAde, IB = 15 mAde)
(lC = 300 mAde, IB = 30 mAde)
VCE(sat)
All Types
All Types
2N3500, 2N3501
2N3498, 2N3499
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-125
-
-
-
-
-
Vde
0.2
0.25
0.4
0.6
2N3498 thru 2N3501
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25"C unless otherwise noted)
Characteristic
Symbol
Base-Emitter Saturation Voltage
(lc = 10 mAde,lB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 150 mAde, IB = 15 mAde)
(lC = 300 mAde, IS = 30 mAde)
VSE(sat)
All Types
All Types
2N3500, 2N3501
2N3498, 2N3499
Min
Typ
-
-
Max
Unit
Vde
0.8
0.9
1.2
1.4
-
-
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(VCE = 20 Vde, IC = 20 mAde, f = 100 MHz)
Output Capacitance
(VCS = 10 Vde, IE
=
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
=
2N3498, 2N3499
2N3500, 2N3501
100 kHz)
-
Cobo
Cibo
100 kHz)
=
2N349B, 2N3500
2N3499, 2N3501
hie
1.0 kHz)
0.2
0.25
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vde, f
1.0 kHz)
2N349B, 2N3500
2N3499, 2N3501
h re
=
-
Small-Signal Current Gain
(IC = 10 mAde, VCE = 10 Vde, f
1.0 kHz)
2N349B, 2N3500
2N3499, 2N3501
hfe
=
50
75
Output Admittance
(lC = 10 mAde, VCE
=
2N3498, 2N3500
2N3499, 2N3501
hoe
1.0 kHz)
-
td
-
=
=
10 Vde, f
-
150
10 Vde, f
Input Impedance
(lC = 10 mAdc, VCE
•
0, f
If
-
MHz
10
B.O
pF
80
pF
1.0
1.25
kohms
2.5
4.0
X 10-4
-
300
375
-
100
200
20
-
ns
35
-
ns
/,mhos
SWITCHING CHARACTERISTICS
Delay Time
(lC = 150 mAde, IBI
=
15 mAde, VCC
=
100 Vde, VBE{offl = 2.0 Vde)
Rise Time
(lC = 150 mAde, IBI
=
15 mAde, VCC
=
100 Vde, VBE(off)
Storage Time
(lC = 150 mAde, IBI
= IB2 =
15 mAde, VCC
=
100 Vde)
Fall Time
(lc = 150 mAde, IBI
= IB2 =
15 mAde, VCC
=
100 Vde)
-
tr
= 2.0 Vde)
ts
tf
-
BOO
BO
ns
ns
(I) Pulse Test: Pulse Width ... 300 !'S, Duty Cycle ... 2.0%.
(2) If = Ihfel· ftest·
FIGURE 1 - CURRENT GAIN CHARACTERISTICS varsusJUNCTION TEMPERATURE
2N3498
200
VCE=2.0V _
TJ =
z
12~O~
-1-
100
;;:
'">-
~
a'-'
25°C
70
50
"'-"
"~
~
-55°C
c
0
~ fooo-
20
,
~
~~
10
1.0
20
3.0
5.0
7.0
10
20
30
50
70
100
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-126
200
~~
300
500
2N3498 thru 2N3501
2N3499
300
VCE"2.0V _
25~C
z
" f'
06
",,"-
""
I-~
10-
~
~
1N350~.
:-.
_...._..
VCElsat!
o
10
20
50
10
20
.J:;"
~ ~~
1~319~
02
•
V
11N31511.;,.
04
"i'
100
50
1N349j
200
T
500
IC, COLLECTOR CURRENT (rnA!
FIGURE 7 - CAPACITANCE
FIGURE 6 - TEMPERATURE COEFFICIENTS
+1.0
-r I. 1
......... ~
-
UVC for VCE(sati
+0. 5
G
">
~
0
t-
V
~
10 0
......... ~tOI2~OC!
0
I I
0
~
~
8 -0. 5
w
8:
20
"
Z
w
'"=>t-
(25 0C , ¥ "",,-
5'"
......
UVB for VBE(sat!
~
C~ ....
0
u
'"~ -.1.0
r-...
(25 0C to -55 0C!
....-
-
.....
...
... I-
...... ......... 2N3498, 2N3499
10
:1:
;3
,,'
0
Cob
5. 0
t-
.....
,g
-1
5
~~250~ to moci
30
2N3500,2N3501
2.0
-2. 0
-2. 5
....
..... "'"
II
1.0
100
200
300
400
500
01
0.2
0.5
1.0
2.0
5.0
10
20
REVERSE BIAS VOLTAGE (VOLTS!
IC, COLLECTOR CURRENT (rnA!
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-129
50
100
2N3498 thru 2N3501
AUDIO SMALL-SIGNAL h PARAMETER CHARACTERISTICS
(VCE = 10 Vdc.TA = 2SoC.f= 1.0kHzl
FIGURE B - CURRENT GAIN
FIGURE 9 - OUTPUT IMPEDANCE
400
0
300
0
ALL TYPES
20
200
1/i00i
2N3499.2N3501
~I--"
0
0
•
0
~
~fo-
2N3499.2N3501
i0oi
I/"
.... 1-
I--" ....
0
2N3498.2N3500
!--,r-fo-
/
0
0
-
I-'"
-'
, ,......
~
~
3.
01..,....-'
I-- ....
I'"
" . .......
.,..,.. f.""
./
2N3498.2N35Oo
,
01--
0
20 0.1
o2
0.3
05
07
1.0
20
30
50
70
10
10
02
01
03
IC. COLLECTOR CURRENT (mAl
0
,
FIGURE 10 - INPUT IMPEDANCE
~
or\.
I'
"
4. 0
~
0
I\.
2. 0
~
10
I'
\
1. 0
:\
8
0.3
05
0.7
10
1'.
20
I"
2N3498.2N350 O~
0
I'-
r\.
'" !'I.. ....
O. 6
02
~
0
r\. r\.
i
4
01
7.0
2N3499. 2N3501
0
~
~
50
0
2N3499.2N3501
2N3498. 2N3500'
~
I-
3.0
~
'\.
0
Z
20
"I
\\. I"
[\ [\
1,\
0
w
'-'
10
FIGURE 11 - VOLTAGE FEEDBACK RATIO
i\
8. 0
"'~
0.7
0
I\.
01\
0.5
IC. COLLECTOR CURRENT (mAl
30
50
....
r........
0
roo.
7
70
5
10
IC. COLLECTOR CURRENT (mAl
01
02
03
05
07
10
20
3.0
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-130
50
7.0
10
2N3506
2N3507
MAXIMUM RATINGS
Symbol
2N3506
2N3507
Unit
Collector-Emitter Voltage
VCEO
40
50
Vdc
JAN, JTX, JTXV AVAILABLE
Collector-Base Voltage
VCBO
60
80
Vdc
CASE 79-04, STYLE 1
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
3.0
Adc
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25·C
= 25·C
Po
1.0
5.71
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25·C
= 25·C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Operating and Storage Junction
Temperature Range
TO-39 (TO-205AD)
THERMAL CHARACTERISTICS
SWITCHING TRANSISTORS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R6JC
35
·C/W
Thermal Resistance, Junction to Ambient
R6JA
175
·CIW
Characteristic
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
-
Collector-Emitter Breakdown Voltage( 1)
(lC = 10 mAde, pulsed, IB = 0)
2N3506
2N3507
V(BR)CEO
40
50
-
Collector-Base Breakdown Voltage
(lC = 100 /LAde, IE = 0)
2N3506
2N3507
V(BR)CBO
60
80
-
V(BR)EBO
5.0
-
-
1.0
150
1.0
150
Emitter-Base Breakdown Voltage
(IE = 10 /LAde, IC = 0)
Collector Cutoff Current
(VCE = 40 Vde, VEB(off)
(VCE = 40 Vdc, VEB(off)
(VCE = 60 Vdc, VEB(off)
(VCE = 60 Vdc, VEB(off)
= 4.0 Vdc)
= 4.0 Vdc, TA =
= 4.0 Vdc)
= 4.0 Vde, TA =
Base Cutoff Current
(VCE = 40 Vde, VEB(off)
(VCE = 60 Vde, VEB(off)
= 4.0 Vde)
= 4.0 Vdc)
2N3506
2N3507
1.0 Vde)
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
2N3506
2N3507
ICEX
2N3506
100·C)
IBL
Vdc
Vde
/LAde
-
2N3507
100·C)
Vdc
-
/LAde
1.0
1.0
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 500 mAde, VCE
hFE
(lC
=
(lc
= 2.5 Adc, VCE = 3.0 Vde)
(lC
= 3.0 Ade, VCE = .5.0 Vdc)
1.5 Adc, VCE
=
=
2.0 Vdc)
Collector-Emitter Saturation Voltage(l)
(IC
(lC
(lC
Base-Emitter Saturation Voltage(l)
(IC
(lC
(lC
= 500 mAde, IB = 50 mAde)
= 1.5 Ade, IB = 150 mAde)
= 2.5 Ade, IB = 250 mAde)
= 500 mAde, IB = 50 mAde)
= 1.5 Adc, IB = 150 mAde)
= 2.5 Ade, IB = 250 mAde)
50
35
40
30
30
25
25
20
VCE(sat)
VBE(sat)
0.9
-
-
-
200
150
-
0.5
1.0
1.5
Vdc
1.0
1.4
2.0
Vde
-
MH~
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Capacitance
(VCB
(VBE
=
= 100 mAde, VCE =
= 0, f = 100 kHz)
= 0, f = 100 kHz)
(lC
5 Vdc, f
10 Vdc, IE
= 3 Vdc,
IC
=
20 MHz)
fr
Cobo
Cibo
60
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-131
40
pF
300
pF
•
2N3506,2N3507
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°e unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Ie = 1.5 Adc, IB1 = 150 mAdc
td
Rise Time
Vee = 30 V, VEB = 0 V
tr
Storage Time
Ie = 1.5 Adc, IB1 = IB2 = 150 mAdc
ts
Fall Time
Vee
= 30V
tf
(1) Pulse Test: Pulse Width", 300 ",", Duty eycle
=
FIGURE 2 -
1.4
100
~~.=IO
I.Z _TJ=ZSoC
•
!l
~
0.1
I
0.6
~
J
-
I--"
"""
./
"
VII("~
1.0
.r ""'-
50 If"
O.J
0.3
f---t.
/
0.5
0
..... . /
......
"
Z.O
1.0
"- r---
t,,'i "
O.Z
0.3
~
i
g
!:.:.
ssoc
2N3506
-
r-
r--
"
1
Ve,= I V
--Ve,=2V
z
~
"....... .:\,
-
0
........~
'\
.....;:::,. .....~ ',,\
"-
i
g
02
03
05
10
20
100
1.0
~- -
Z.O
3.0
Ie. COllECTOR CURRENT lAde)
- - Ve ,=2V
I-- TJ .. 2S·C
I-- TJ I=-S(.C
50 1--- . -
-
I"1""--_
'-.
~
.
' ..
"- ~
02
03
05
10
'c. COLLECTOR CURRENT 'Ade)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-132
'
,""
t~ \'\.\
20
01
30
2N3501
--VcE=IV
.......
~
.........
20
01
0.7
2N3507
200
-
0.5
CURRENT GAIN CHARACTERISTICS
200
TJ "'2SOC-
I,
Ie, COlLECTOR CURREIIT 'Ade 1
AGURE 3 -
100
-~
t
~r-.
~
I0
0.1
3.0
lOV-
V.. 2V 1e=101,,1"=1,, 'TJ =ZsoC_
t,-to-lit
....,;~"
2N3506
i--
ns
SWITCHING TIMES
""-
Ie. COlLECTOR CURRENT IAdeI
TJ = 125 0 C
ns
35
Vee
zo
o
O.Z
ns
55
t"
/
-
O.Z
ns
0 1"~
"
10-
Ve.,..., /
0.4
15
30
2.0%.
FIGURE 1 - SATURATION VOLTAGES
i
-
-
20
~~
30
2N3546
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
12
Vde
Collector-Base Voltage
VCBO
15
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
DC Collector Current
IC
200
mAde
Total Device Dissipation (Ui TA
Derate above 25'C
= 25'C
Po
0.36
2.06
Watt
mWf'C
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
1.2
6.9
Watts
mWf'C
TJ, Tstg
-65 to +200
'c
Symbol
Max
Unit
Operating and Storage Temperature
Temperature Range
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
3 Collector
";.~
1 Emitter
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
R8JC
0.15
'CIW
Thermal Resistance, Junction to Ambient
R8JA
0.49
'CIW
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise
SWITCHING TRANSISTOR
PNP SILICON
noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
(VCE
=
(lC
(IE
=
(lC
=
=
10 /lAde, IC
10 Vde, VBE(off)
Collector Cutoff Current
(VCE
Collector Cutoff Current
(VCB
(VCS
10 mAde, IB
= 0)
= 0)
= 0)
10 /lAde, IE
=
3.0 Vde)
= 10 Vde, VBE(off) = 3.0 Vde)
= 10 Vde)
= 10 Vde, TA = 150'C)
-
V(BR)CEO
12
V(BR)CBO
15
V(BR)EBO
4.5
IBEV
-
0.10
ICEX
-
0.010
/LAde
0.010
10
/lAde
ICBO
Vde
Vde
Vde
/LAde
ON CHARACTERISTICS
DC Current Gain (11
(lC = 1.0 mAde, VCE = 1.0 Vde)
(lC = 10 mAde, VCE = 1.0 Vde)
(lc = 10 mAde, VCE = 1.0 Vde, TA
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
-
hFE
=
20
30
15
25
15
-55'C)
Collector-Emitter Saturation Voltage (1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 100 mAde, IS = 10 mAdel
VCE(satl
Base-Emitter Saturation Voltage (1)
(lC = 10 mAde, IS = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
(lC = 100 mAde, IB = 10 mAde)
VSE(sat)
120
-
Vde
-
0.15
0.25
0.50
0.7
0.8
-
0.9
1.3
1.6
700
-
Cobo
-
6.0
pF
Cibo
-
5.0
pF
Vde
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
10 Vde, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
1.0 MHz)
(VCB
=
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-133
MHz
•
2N3546
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Turn-On Time
ton
Turn-Off Time
toll
-
Total Control Charge
(lC = 50 rnA, IB = 5.0 rnA, VCC
aT
-
DelayTime
Rise Time
Storage Time
Fall Time
IC = 50 rnA, IBI = 5 .0 rnA
VBE := 2.0 V, VCC = 3.0 V
td
IC = 50 rnA, IBI
VCC = 3.0 V
ts
tr
= IB2 = 5.0 rnA
tf
= 3.0 VI
10
n.
15
n.
20
n.
15
n.
40
ns
30
ns
400
pC
(1) Pulse Test: PW = 300 !,S, Duty Cycle .. 2.0%.
FiGURE 1 -
UMITS OF SATURATION VOLTAGES
FIGURE 2 -
STORAGE TIME BEHAVIOR
30
1.6
r-~'= 10
1.4 r- TJ =25°C
i
I
1.0
V
=
a
0.6 F - r- t- MIN VIEI,.t)
1:
I
-
o
1.0
p,=zO~
'II =112
-
.............
10 --TJ=25°C
- - - TJ = 125°C
-
...... ..... ..... ............
........ ........
t-.....
.......
....
...... ...... ..........
.......
I
I
0.2
~
t;
.:..:
--
--
t:-t,-I~tf f.... ........
~
I
I
0.4
r--_~._ k;7"-
r-- P,=IO
Li
I
........
r-- r- r- MAX VIEI ..t)
0.8
,;:-
~
V
!l!
i
20
/
1.2
'\
I
.....
r- r- M~X VC~I"~I
2.0
5.0
10
50
20
5
10
20
70
50
30
100
Ie. COllECTOR CURRENT ImAl
100
Ie. COLLECTOR CURRENT ImAl
FIGURE 3 - DELAY AND RiSE TIME
EQUIVALENT TEST CIRCUIT
FIGURE 4 - STORAGE AND FALL TIME
EQUIVALENT TEST CIRCUIT
FIGURE 5 - SWITCHING TIME
TEST CIRCUIT
-3 V
-3 V
VaB
550
550
1000
2 Kn
0.1 "F
Vin
IN916
Vin +2 Vo"V-\- -
-10.8V
;*~ Cs .; 20 pF
....
o----1~
62
n
....-;~~~VOUI.
M+r
1000
I
~~
F
I
;*~ Cs '; 10 pF
I
~ ~
> 200 ns
< 2 ns
Zin = 50 n
PULSE WIOTH
RISE TIME
U
PULSE WIDTH = 200 ns
RISE TIME'; 2 ns
DUTY CYCLE'; 10%
-2 V
PULSE WIDTH = 200 ns
RISE TIME'; 2 ns
DUTY CYCLE'; 10%
Ion: Vaa = +3 V. Vin = -7 V
loft: VBa
'OSCILLOSCOPE RISE TIME'; 1 ns
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-134
=-4 V. Vin =+6 V
2N3546
FIGURE 6 - MINIMUM CURRENT GAIN CHARACTERISTICS
70
50
z
iii
~
lO
2l
20
~
B
~
10
7
LO
---
;::::;.- ro-
...--
TJ
-- --- -- -
------
=125"C
.- -1---- --
I--
.......
TJ = 25"C
TJ =-55"C
--Vc,=IV
- - - Vc,=2V
r- .....
- ''"- "
'-f-
"'""'
--
- --r--. -
r:::..- .......
--
~ .::::::..:
........
.....
-......: .~~.
NI\,
~
'
..
t-..r-..
r-..
2.0
l.O
5.0
7.0
10
20
lO
Ie. COllECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-135
70
100
•
2N3634
thru
2N3637
JAN, JTX AVAILABLE
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
2N3634
2N3635
2N3636
2N3637
Unit
Collector-Emitter Voltage
VCEO
140
175
Vde
Collector-Base Voltage
VCBO
140
175
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
1.0
Ade
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
5.71
Watt
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWfC
GENERAL PURPOSE
TRANSISTORS
TJ, Tstg
-65 to +200
°c
PNP SILICON
Rating
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
140
175
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
(IC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 !lAde, IE = 0)
V(BR)CEO
2N3634, 2N3635
2N3636, 2N3637
Vde
V(BR)CBO
2N3634, 2N3635
2N3636, 2N3637
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
Vde
-
140
175
-
5.0
-
Vde
Collector Cutoff Current
(VCB = 100 Vde, IE = 0)
ICBO
-
100
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
50
nAde
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 0.1 mAde, VCE
hFE
-
=
10 Vde)
2N3634, 2N3636
2N3635, 2N3637
40
80
-
-
(lC
=
1.0 mAde, VCE
=
10 Vde)
2N3634, 2N3636
2N3635, 2N3637
45
90
-
(lC
=
10 mAde, VCE
=
10 Vde)
2N3634, 2N3636
2N3635, 2N3637
50
100
-
(lC
= 50
=
10 Vde)
2N3634, 2N3636
2N3635, 2N3637
50
100
300
2N3634, 2N3636
2N3635, 2N3637
25
50
(lC
=
mAde, VCE
150 mAde, VCE
=
10 Vde)
Collector-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
150
-
Vde
0.3
0.5
-
0.8
0.9
Vde
0.65
2N3634, 2N3636
2N3635, 2N3637
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-136
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(VCE = 30 Vde, IC = 30 mAde, f = 100 MHz)
-
2N3634 thru 2N3637
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted)
Max
Unit
Output Capacitance
(VCB = 20 Vdc, IE = 0, I = 100 kHz)
Characteristic
Cobo
-
10
pF
Input Capacitance
(VBE = 1.0 Vdc, IC = 0, f = 100 kHz)
Cibo
-
75
pF
100
200
600
1200
-
3.0
40
80
160
320
Input Impedance
(lC = 10 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
Symbol
Min
ohms
hie
2N3634, 2N3636
2N3635, 2N3637
h re
Voltage Feedback Ratio
(lc = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small-Signal Current Gain
(lc = 10 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
X 10-4
-
hie
2N3634, 2N3636
2N3635, 2N3637
Output Admittance
(lc = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
-
200
/Lmhos
Noise Figure
(lc = 0.5 mAdc, VCE = 10 Vdc, RS = 1.0 k ohms, 1= 1.0 kHz)
NF
-
3.0
dB
•
SWITCHING CHARACTERISTICS
Turn~On
Time
(VCC = 100 Vdc, VBE = 4.0 Vdc,
IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc)
Turn-Off Time
(1) Pulse Test: Pulse Width", 300
jLS,
Duty Cycle'" 2.0%.
FIGURE 1 - JUNCTION CAPACITANCE VARIATIONS
FIGURE 2 - GAIN-BANDWIDTH PRODUCT
100
500
v~=iov
TJ = 25°C
0_
j!OO
,.....
0
~
C,.
0-
IE
:c
~
0
I:i
i'-.
Cob
0
5
0.1
0.5 0.7 1.0
.
I""
2.0 3.0
~~
il5
i;j 100
./
..£
.....
0.2 0.3
". f.-"""
200
5.07.0 10
70
20 30
50
1.0
50 70100
REVERSE BIAS IVOLTS)
V
./
./
/
2.0
3.0
5.0 7.0
10
20
I. EMITIER CIJIIRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-137
30
50
70 100
2N3634 thru 2N3637
AGURE 3 - CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
2N3634
300
2N3634
zoo
i
VeE -2.0V
TJ-125'C
100
i:
TJ
1
--
25'C
I
H
TJ
30
......
............
....... ~ ~r-..
5S'C
...... roo..
r-.. '~
zo
10
1.0
•
~~
~
2.0
3.0
5.0
7.0
10
20
so
30
70
zoo
100
Ie. COLLECTOR CURRENT ImA)
2N3637
300
2N3635
zoo
i
TJ
125'C
TJ
25'C
r--...
"
I
100
TJ
i:
VeE - 2.0V
55'C
~
"'
~"'
H
J
~
30
,
~
zo
10
1.0
2.0
3.0
5.0
7.0
20
10
so
30
zoo
100
70
Ie:. COLLECTOR CURRENT (mAl
FIGURE 4 - CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE
2. 0
2H3634·2H3635
TJ =25'C -
J
0
7
......
VeE-10V~
......
............
O. 5
............
O. 3
........
I
~ VeE = 2.0V
r-....
NORMALIZED TO VeE = 10V Ie -50 mA
......
2
~
~"'"
VeE = l.Ov..............
1
1.0
2.0
3.0
50
70
10
20
30
50
70
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-138
100
~
'""""200
2N3634 thru 2N3637
FIGURE 5 -
CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
2N3636
300
2N_
200
Ye.- 2.DY
TJ - 125'C
~ 100
I
70
G
50
g
i
25'C
TJ
=
TJ
30
.........
""''1'0...t-...
'"
55'C
20
.....
,
"-
t-.~I'o...
"-~"
10
1.0
2.0
30
5.0
7.0
20
10
30
70
50
100
~~
200
Ie. COllECTOR CURRENT (mAl
2N3637
300
2N3837
TJ -125'C
200
.......
TJ
.........
25'C
I
z: 100
, ~I'o...
Yco- 20Y
ii
!
~
IS
i
TJ
70
55'C
.......
r-.... I.....
"
0
0
..... ~
~~
0
~
10
1.0
2.0
3.0
5.0
7.0
10
30
20
100
70
50
200
Ie. COLLECTOR CURRENT (mAl
FIGURE 6 -
CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE
10
2N3636·2N3637
TJ~15'C-
10
.........
07
.......
.........
...........
05
I"'--..
03
NORMALIZED TO VeE
~~
10V, Ie
~50
..........
,
"\.
VeE~1.0~
mA
02
VeE~IOr~
""' ..........
........
"
.........
"-,,r-....
~
2.0 V
'"
..... ~
01
10
VeE
10
30
50
70
10
10
30
50
70
Ie COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-139
100
~200
•
2N3634 thru 2N3637
FIGURE 7 10
INPUT IMPEDANCE
\
\
1\ \
10
OUTPUT IMPEDANCE
0
\.
70
j
0
\
~ 5. 0
1N3635,1N363
\
0
\
~ 10
i\
.....-.
0
\
\
\
1\
0
/
1'\
0.1
0.3
05
07
1.0
1.0
30
10
01
0.1
CURRENT GAIN
V
V
1N3634,1N3636
03
0.5
07
1.0
10
30
50
70
10
FIGURE 10 -
VOLTAGE FEEDBACK RATIO
0 1, \
I
I
\
:~
1N3635,1N3637
150
/
I" EMITTER CURRENT ImAI
100
-.l
I
V
5.0
50 70
I" EMITTER CURRENT ImAl
FIGURE 9 -
II
.,.... t-- I-
7
01
V
VII
'\
7. 0
o5
V
V
1N3635, 1N3637
1\
0
,/
f-
1N3634, 1N3636\
•
FIGURE 8 0
J....- f-
.o
0
z
f'\
l"-.. \
1\
\
I\.
1§
i
0
100
1-+--1~3634, 1N3636
j
. . . V f..-
+-
1'\
0
.c
1\
30
1N3634,
1N363~
1. O·
0
l"\1N3635, 1N3637
1"-
0
50
01
0.1
03
05
07
10
10
30
50
70
o7
10
01
I" EMITTER CURRENT ImAI
01
03
05
O}
1.0
1.0
I" EMITTER CURRENT ImAI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-140
~
"'"
30
"-
50
70
10
2N3634 thru 2N3637
FIGURE 12 - TEMPERATURE COEFFICIENTS
FIGURE 11 - SATURATION VOLTAGES
1.0
+1.0
_
11,= 10
./
TJ =2S'C
/'
0.8
V"l::!1-
~
+0. S
.......
fi
~
~
~
!:l
I
0.6
!i!
:; ;
J
z
8vc for VeEI ... )
8 -0. S
52
~
~
------
l'Cto-ss,c,12S'C to 125°CI
0.4
~
(2S0C to -SS'CI
~ -1.0
,,}
/ " ~IEI
~
TJ
0.1
~ 0.05
~
100 0 C
- - - Second Breakdown LI'lllted
- - - - Thermal Limitation @ TC = 25°C
;::=+==,
003
0.01
3.0
4.0
Pulse Duty Cyele" 11}%
Applicable To Rated BVCEO
6.0
8.0
10
10
"
30
40
60
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-145
•
2N3724, 2N3725
TYPICAL DC CHARACTERISTICS
FIGURE 3 - "ON" VOLTAGES
FIGURE 2 - DC CURRENT GAIN
400
14
200
z
:;;:
r-- r-
to
I-
15
in
25°C
r--
100
~
::J
SO
c
60
<.>
<.>
~
i'ooo",
10
:;
0
i! 0.8
r--...
.
-
' - - f--.- 55 OC
40
:;
20
100
50
0.6 FoVBElsat}@ICIIB= 10
0
>
>' 04
r-....
'"
10
200
1...--....
02
I---VCElsat}@le /I B 10
500
10
1000
50
20
~
..
w
to
+2.5
\
ffi
0.4
<.>
"'
0.2
IC'loomA
~
0
0.5
1.0
2.0
5.0
~ +0.5 !---'8VC FOR VCE(sa!}
\
1000 rnA
-
10
-
20
8
I I
"' ....
'-
II
+1.0
U
\
\
I-
~
~
ffi
\
c
>
--
.§. +1.5
lI-
~
'APPLIES FOR ICIIB < hFE/2
>
0.8
0.6
w
~
SrOmA
-0.5
I-
~ -1.0
500 rnA
~
300 rnA
;;;;0-
-~
-1.5 f--8VB FOR VSE
I-
~
I II
50
1000
I
~ +2.0
TJ = 25°C
:;
c
>
500
200
FIGURE 5 - TEMPERATURE COEFFICIENTS
FIGURE 4 - COLLECTOR SATURATION REGION
1.0
100
Ie. COLLECTOR CURRENT (rnA)
IC. COLLECTOR CURRENT (rnA)
~
c
V
:::::;:::::;;;
w
to
20
•
f - - TJ = 25 0 C
12
VCE = 1.0 V
iJ = i25 0 C
-2.0
-2.5
100
200
500
10
20
30
lB. BASE CURRENT (rnA)
100
50
200
300
500
1000
IC. Cq,LLECTOR CURRENT (rnA)
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 6 - CURRENT,GAIN - BANDWIDTH PRODUCT
~
500
~
I-
t;
::J
C
~
300
FIGURE 7 - CAPACITANCE
100
70
VCE = 10 Vdc
f = 100 MHz
TJ = 25°C
V
:J:
l:; 200
r----...
V
.......
~
z
~
10
t-- I-
Cob
7.0
5.0
70
50
4.0
r--.
U
I-
"'
20
f......Cib
f0-
Z
15
z
=25°C
e;
:;;: 100
<.?
"'
13
.t:'
30
..
V
I
~
w
<.>
...... 1'..
c
;:l
TJ
50
6.0
10
20
40
60
100
200
3.0
0.1
400
IC. COLLECTOR CURRENT ImA}
0.2
0.5
1.0
2.0
5.0
10
VR. REVERSE VOLTAGE IVOL TS}
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-146
20
50
100
2N3724,2N3725
FIGURE 9 - TURN-OFF TIME
FIGURE 8 - TURN-ON TIME
200
'C/IS'lO
TJ' 25 0 C
~
100
200
50
,.w
1'.
20
;::
r-..
]
w
's@IC/IS' 20
"-
50
'"
;::
~
~ i<-'"
10
Id @VSE(olll 0 V ~
VSE(olll' 3.S Vdc
Vce' 30 Vdc
3.0
......
10
20
10
20
30
50
100
200
300
r/lf)S'IO
I'
500
V
./
./
I'-....
"-
V- I/
v" V
10
1000
I'--
t'.....
30
20
50
Vcc' 10 Vdc
TJ' 250 C
II@ IClls' 10
I Ic/lS - 20
70
,,@VCC'lOVdc
VCC ' 30 Vdc
30
TnT
f'.,
100
20
30
50
100
200
300
1000
+30V
;;:
.:.
15
i:5
>-
1.0 p.F
f---o
-3.8 V
43
Yin
P.w.
D.C.
~
9.7 V
= 1.0 p..
~
2%
T'O
62
1000
FIGURE' 11 - COLLECTOR CUTOFF CURRENT
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
JL
500
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
'"
'"
~
~
~
10
>::>
'"
'"0>-
1.0
8
0.1
I
100
3~",
1=
1=
10~
~
LZ;
~
~
~
IJI"
!:
p.F
~
~ I-VCP60
0
;
1.0 k
....... ~
A P
100
0.01
o
20
40
60
80
100
120
140
TJ. JUNCTION TEMPERATURE (DC)
=
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-147
160
180
200
•
2N3726
2N3727
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
Vde
Collector-Base Voltage
VCBO
45
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IB
100
mAde
300
mAde
Rating
Base Current
Collector Current -
•
Continuous
IC
One Die
Both Die
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
400
2.29
500
2.86
mW
mWI"C
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
0.85
4.85
1.4
8.0
' Watt
mWI"C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
°c
Collector1 to Collector2 Voltage
Voltage rating any lead to case
VC1 VC2
±200
±200
Vde
Vde
CASE 654-07, STYLE 1
Emitter 3
5 Emitter
DUAL
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to MD2905,A lor graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
45
Collector-Base Breakdown Voltage
(Ie = 0.01 mAde, IE = 0)
V(BR)CBO
45
Emitter-Base Breakdown Voltage
(Ie = 0.01 mAde, Ie = 0)
V(BR)EBO
5.0
-
-
10
10
nAde
!lAde
-
0.1
!lAde
80
120
135
115
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA = 150°C)
ICBO
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.D1 mAde, VCE = 5.0 Vde)
(lC = 0.1 mAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vde)
(Ie = 50 mAde, VCE = 5.0 Vde)(1)
hFE
-
-
350
Collector-Emitter Saturation Voltage(1)
(Ie = 50 mAde, IB = 2.5 mAde)
VCE(sat)
-
0.25
Vde
Base-Emitter Saturation Voltage(1)
(lC = 50 mAde, IB = 2.5 mAde)
VBE(sat)
-
1.0
Vde
60
200
600
SMALL-5IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 1.0 mAde, VCE = 10 Vde, I = 20 MHz)
(lC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
iT
-
MHz
Output Capacitance
(VCB = 10 Vde, IE = 0, I = 1.0 MHz)
Cobo
-
8.0
pF
Input Capacitance
(VEB = 0.5 Vde, IC = 0, f = 1.0 MHz)
Cibo
-
30
pF
Input Impedance
(Ie = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
hie
-
11.5
kohm
Voltage Feedback Ratio
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
h re
-
1500
X 10-6
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
hie
135
420
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-148
-
2N3726,2N3727
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted)
Characteristic
Output Admittance
(lC = 1.0 mAde, VCE
Noise Figure
(lC = 30 ~de, VCE
=
=
10 Vde, f
=
5.0 Vde, RS
Symbol
Min
Max
Unit
hoe
-
80
~mhos
NF
-
4.0
dB
0.9
1.0
-
-
5.0
2.5
-
1.6
0.8
1.0 kHz)
=
10 kohms, f
=
1.0 kHz, B.W.
= 200 Hz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lc = 0.1 mAde to 1.0 mAde, VCE
=
5.0 Vde)
Base-Emitter Voltage Differential
(lC = 0.1 mAde to 1.0 mAde, VCE
=
5.0 Vde)
hFE11hFE2
iVBE1-VBE2i
2N3726
2N3727
Base-Emitter Differential Change Due to Temperature
(lC = 0.1 mAde to 1.0 mAde, VCE = 5.0 Vde, TA = - 55'C to + 25'C)
(lC
= 0.1
mAde to 1.0 mAde, VCE
=
5.0 Vde, TA
= + 25'C to + 125'C)
Il.(VBE1-VBE2)
2N3726
2N3727
2N3726
2N3727
(1) Pulse Test: Pulse W,dth", 300 ~, Duty Cycle'" 2.0%.
(2) IT is defined as the frequency at which ihfei extrapolates to unity.
(3) For purposes of this ratio, the lowest hFE reading is taken as hFE1.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-149
-
mVde
mVde
2.0
1.0
•
MAXIMUM RATINGS
2N3735
2N3737
Symbol
2N3734
Collector-Emitter Voltage
VCEO
30
50
Vde
Collector-Base Voltage
VCBO
50
75
Vde
Emitter-Base Voltage
VEBO
Rating
Collector Current -
Continuous
IC
5.0
Vde
1.5
Ade
TO-39
2N3734
2N3735
TO-46
2N3737
2N3734
2N3735
Un"
CASE 79-04, STYLE 1
TO·39 (TO·205AD)
3 Collector
~~
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Po
1.0
5.71
0.5
2.86
Watt
mWI"C
Total Davice Dissipation @ TC = 25·C
Derate above 25·C
Po
4.0
22.8
2.0
11.4
Watts
mWf'C
2N3737
·C
CASE 26·03, STYLE 1
TO·46 (TO·206AB)
Operating and Storage Junction
Temperature Range
TJ, Tatg
-65 to +200
, Emitter
THERMAL CHARACTERISTICS
•
Charactarfstlc
Symbol
2N3734
2N3735
2N3737
Unit
RruC
0.044
0.088
·ClmW
0.35
·ClmW
Thermal Resiatance, Junction to Case
Thermal Resistance, Junction to Ambient
RruA
0.175
GENERAL PURPOSE
TRANSISTORS
NPN SILICON
,/
Refer to 2N3725 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
= 26·C unless otherwise
noted.)
Symbol
Charactariatic
Min
Max
30
50
-
50
75
-
5.0
-
-
0.20
20
0.20
20
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage{l)
(lC = 10 mAde, IB = 0)
V{BR)CEO
2N3734
2N3735, 2N3737
Collector-Base Breakdown Voltage
(lC = 10 /lAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /lAde, IC = 0)
Collector Cutoff Current
(VCE = 25 Vde, VEB =
(VCE = 25 Vde, VEB =
(VCE = 40 Vde, VEB =
(VCE = 40 Vde, VEB =
Base Cutoff Current
(VCE = 25 Vde, VEB
(VCE = 40 Vde, VEB
V{BR)EBO
ICEX
2 Vde)
2 Vde, TA
2 Vde)
2 Vde, TA
Vde
V{BR)CBO
2N3734
2N3735, 2N3737
2N3734
=
100·C)
=
100·C)
2N3735, 2N3737
= 2 Vde)
= 2 Vde)
IBL
Vde
/lAde
/lAde
-
0.3
0.3
-
2N3734
2N3735, 2N3737
35
40
35
30
20
2N3734
2N3735, 2N3737
30
20
-
-
0.2
0.3
0.5
0.9
-
0.8
1.0
1.2
1.4
2N3734
2N3735, 2N3737
Vde
-
ON CHARACTERISTICS
DC Current Gain(1)
(lc = 10 mAde, VCE = 1 Vde)
(lc = 150 mAde, VCE = 1 Vde)
(lC = 500 mAde, VCE = I Vde)
(lC = lAde, VCE = 1.5 Vde)
(lC
=
1.5 Ade, VCE
= 5 Vde)
hFE
Collector-Emitter Saturation Voltage{l)
(lC = 10 mAde, IB = I mAde)
(lc = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
(lc = 1 Ade, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 10 mAde, IB = I mAde)
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lc = 1 Ade, IB = 100 mAde)
VBE{sat)
-
-
120
80
-
Vde
Vde
-
-
0.9
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3·150
-
2N3734,2N3735,2N3737
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCS = 10 Vdc, IE = 0, I = 100 kHz)
Cabo
-
9.0
pF
Input Capacitance
(VSE = 0.5 Vdc, IC = 0, I = 100 kHz)
Cibo
-
80
pF
hIe
2.5
-
-
Turn-On Time
(VCC = 30 V, VSE(off) = 2.0 V, IC = 1.0 Amp, lSI = 100 mAl
ton
-
40
ns
Turn-Off Time
(VCC = 30 V, VBE(off) = 2.0 V, IC = 1.0 Amp, IBI = 100 mAl
toff
-
60
ns
Total Control Charge
(IC = 1 Amp, IS = 100 mA, VCC = 30 V)
QT
-
10
NC
Small-Signal Current Gain
(lC = 50 mAde, VCE = 10 Vdc, I = 100 MHz)
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse W,dth", 300 /LB, Duty Cycle'" 2.0%.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-151
2N3743
JAN, JTX AVAILABLE
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
300
Vde
Collector-Base Voltage
VCBO
300
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
5.7
Watts
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWfC
TJ, Tstg
-65 to +200
°C
Collector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
3
II! ~.()"~'
2
1
1 Emitter
AMPLIFIER TRANSISTOR
PNP SILICON
25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
300
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 !lAde, IE = 0)
V(BR)CBO
300
-
Vde
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
V(BR)EBO
5.0
-
Vde
-
0.3
30
20
25
25
25
25
-
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 200 Vde, IE = 0)
(VCB = 200 Vde, IE = 0, TA
ICBO
=
100°C)
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
!lAde
0.1
!lAde
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 100 !lAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
(lC = 50 mAde, VCE = 20 Vde)
hFE
Collector-Emitter Saturation Voltage(2)
(lC = 10 mAde, IB = 1 mAde)
(lC = 30 mAde, IB = 3 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(2)
(lC = 10 mAde, IB = 1 mAde)
(lC = 30 mAde, IB = 3 mAde)
VBE(sat)
-
250
Vde
-
5.0
8.0
-
-
1.0
1.2
Cobo
-
15
pF
Cibo
-
400
pF
hie
-
1.0
kohms
h re
-
4.0
X 10-4
hfe
30
300
-
Vde
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 20 Vde, IE
= 0, f =
100 kHz)
Input Capacitance
(VEB = 1.0 Vde, IC
=
100 kHz)
Input Impedance
(VCE = 10 V, IC
10 rnA, f
=
1 kHz)
Voltage Feedback Ratio
(VCE = 10 V, IC = 10 rnA, f
=
1 kHz)
Small-Signal Current Gain
(VCE = 10 V, IC = 10 mA. f
=
1 kHz)
=
0, f
=
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-152
2N3743
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Characteristic
Current Gain - High Frequency
(lc = 10 mAdc, VCE = 20 Vdc, f
Output Admittance
(VCE = 10V,IC = 10mA,f
=
Symbol
Min
Ihfel
1.5
-
hoe
-
200
JLmhos
Re(hie)
-
40
ohms
= 20 MHz)
Max
Unit
-
1 kHz)
Real Part of Input Impedance
(lc = 10 mAdc, VCE = 10 Vdc, f
= 5 MHz)
(1) PW '" 30 JLS, Duty Cycle", 1.0%.
(2) PW '" 300 JLS, Duty Cycle", 2.0%.
FIGURE 2 -
FIGURE 1 - JUNCTION CAPACITANCE
500
II
300
I
"'r-., 1c:. 1
200
70
LI I 1
III
GAIN-BANDWIDTH PRODUCT
I I
i:
T,-25"C
1
Ve. - 20V
50
L
~
:z:
I
50
-
30
20
10
0.1
0.2
0.5
1.0
15
..i
~
2.0
I/.:V
20
A
10
rft
5.0
10
20
V/
r-.,
1\
30
II:
70
V
TA =25"C
i
100
.........
Ve
~
.=
\
10V
1\
\
//
50
7
100
II
V
3
I
10
20
30
50
I., EMITTER CURRENT (rnA)
RMRS£ BIAS MllTSl
FIGURE 3 - CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE
100
T,
70
~
!
Ve.= 10V
125°C
T,
50
~5°C
30
-
g
1
-............
I
T,
20
55°C
r- r--~
..........
,
I'-.....
10
I
1.2
10
1.5
Ie, COLLECTOR CURRENT (rnA)
12
15
'"
20
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-153
30
~
"\
50
•
2N3743
FIGURE 4 -
CURRENT GAIN CHARACTERISTICS versus COLLECTOR-EMITTER VOLTAGE
70
.-
TJ=hoc
---
50
-i'--.
""""VCE =5V
30
'\
20
•
10V
VCE
......
I\.
\
\
10
1
1.2
FIGURE 5 -
i
I
I
i
~
1.5
COUECTOR-EMITTER SATURATION VOLTAGE
7.0
6.0
7
10
Ic. COLLECTOR CURRENT (rnA)
I
J
~~
V
~
/
4.0
3.0
1.0
I~/I. ~ 101
TJ = 25°C
0.68
~
~
~
....
t
~
0.64
0.60
i
./
~
1/
.......- V
'"
;'
2.0
0.72
i
./
50
30
FIGURE 6':"" BASE-EMmER SATURATION VOLTAGE
i
/
5.0
1$
I1
I
Ic/l,-10
TJ = 25°C
20
12
......
,/' V
V
V
V
>
J
0.56
10
20
30
50
Ie. COlLECTOR CURREIIT (mAl
10
1
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-154
20
30
50
2N3743
SMALL SIGNAL Y PARAMETERS
TA = 25°C
AGURE 7 -
FIGURE 8 -
INPUT ADMITTANCE
50
1000
1
.1 I.
20
-I-
I.5
5 MHz
~
7.0
5.0
[;l
g
'""'"
Rely;.J,..
!;l
~
2.0
i
1.0
"'"
~
...-
I--
./
0.7
0.5
100
I
50
~
2.0
!
V 1kHz
0.2
1.0
0.5
0.5
I kHz Re IY,J
~
0.1
I/r
0.1
VeE = 10Vdc
0.2 f - -
I~
0.1
10
5.0
>.
0.2
1.0
2.0
5.0
1m IIY,.J I
.05
0.1
10
0.2
I.. EMrrnR CURRENT (mAl
FIGURE 9 -
~
e;
1000
500
500
..
2.0
5.0
10
OUTPUT ADMITTANCE
1
5 MHz t - Im(y.,)
200
200
~
I
IkHYI--'
100
Rely..>
r--
50
VeE
.7
"/
20
/
10
I
5 MHz
10V
~
>.
1.0
0.5
AGURE 10 -
FORWARD TRANSFER ADMITTANCE
z:
~
I
IE. EMITTER CURRENT (mAl
1000
i!j
I
Rely,.J
20
ii!j
~
Rely;.1
r-- Ve~ = 10~do I
I.s
~
;;;
y
5 MHz
0
g
~
1
200
10
I.s
1
ImlyNI
500
Imly;.1
REVERSE TRANSFER ADMmANCE
~'"
V
"
20
6
10
>0
Rely.,)
-
V.
V....... i--'"
0.1
0.2
D.5
VeE = lOWe
i
Imly,.1
L
2
50
~
~
V
100
1.0
2.0
5.0
0.5
0.1
10
I-__ I- I-0.2
0.5
i-"""
1.0
I.. EMmER CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-155
5~z "
i..-'
1..0-' i-"'" 1kHz
2.0
'"
5.0
10
•
MAXIMUM RATINGS
Symbol
2N3762
2N3764
2N3763
2N3765
Unit
Collector-Emitter Voltage
VCEO
40
60
Vde
Collector-Base Voltage
VCBO
40
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
1.5
Ade
Rating
Collector Current -
Continuous
TO-46
2N3764
2N3765
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
5.71
0.5
2.86
Watt
mWfC
Total Device Dissipation @ T C = 25°C
Derate above 25°C
Po
4.0
22.8
2.0
11.4
Watts
mWfC
Operating and Storage Junction
Temperature Range
lead Temperature
1/16" from Case for 10 Seconds
•
TO-39
2N3762
2N3763
TJ, Tstg
-65 to +200
°c
Tl
+235
°c
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
JAN, JTX, JTXV
AVAILABLE
CASE 79-04, STYLE 1
{S5'-'
::~T;~5AD~
2N3765
1 Emitter
CASE 26-03, STYLE 1
TO-46 (TO-206AB)
SWITCHING
TRANSISTORS
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
2N3762
2N3763
Symbol
2N3762
2N3763
2N3764
2N3765
Unit
RruC
44
88
°C/W
RruA
175
350
°C/W
PNP SILICON
,/
= 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
40
60
-
40
60
-
5.0
-
-
0.10
10
0.10
10
-
0.2
0.2
-
2N3762, 2N3764
2N3763, 2N3765
35
40
35
30
20
2N3762, 2N3764
2N3763, 2N3765
30
20
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 10 !lAde, IE = 0)
2N3762, 2N3764
2N3763, 2N3765
Base Cutoff Current
(VCE = 20 Vde, VEB
(VCE = 30 Vde, VEB
V(BR)EBO
ICEX
2.0
2.0
2.0
2.0
Vde)
Vde, TA
Vde)
Vde, TA
-
Vde
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current
(VCE = 20 Vde, VEB =
(VCE = 20 Vde, VEB =
(VCE = 30 Vde, VEB =
(VCE = 30 Vde, VEB =
Vde
V(BR)CEO
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
=
100°C)
=
100°C)
2N3763, 2N3765
= 2.0 Vde)
= 2.0 Vde)
!lAde
IBl
2N3762, 2N3764
2N3763, 2N3765
Vde
!lAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE = 1.0Vde)
(lC = 150 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
(lc = 1.0 Ade, VCE = 1.5 Vde)
(lC
=
1.5 Ade, VCE
=
5.0 Vde)
hFE
Collector-Emitter Saturation Voltage(l)
(lc = 10 mAde, IB = 1.0 mAde)
(lc = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 150 mAde, IB = 15 mAde)
(lc = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
VBE(sat)
120
80
-
Vde
-
-
0.1
0.22
0.5
0.9
Vde
0.9
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-156
-
0.8
1.0
1.2
1.4
2N3762 thru 2N3765
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, I = 100 kHz)
Cobo
-
15
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, I = 100 kHz)
Cibo
-
80
pF
1.8
1.5
-
Current Gain - High Frequency
(lC = 50 mAdc, VCE = 10 Vde, I = 100 MHz)
Ihlel
2N3762, 2N3764
2N3763, 2N3765
-
-
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 V, VBE(off) = 2.0 V,
IC = 1.0 Amp, IB1 = 100 rnA)
td
(VCC = 30 V, IC = 1.0 Amp,
IB1 = -IB2 = 100 rnA)
ts
tl
Total Control Charge
(lC = 1.0 Amp, Ie = 100 mA. VCC = 30 V)
(1) Pulse Test: PW '" 300
,",S,
-
tr
OT
B.O
ns
3.5
ns
80
ns
35
n.
30
pC
•
Duty Cycle'" 2.0%.
"ON" CONDITION CHARACTERISTICS
FIGURE 1 -
DC CURRENT GAIN
300
11
200
-, ...- ...- --...
---
150
100°C
TJ
I
lOll
i
70
G
50
30
f:C.-"",
~
-+--"\,.
~-
TJ = 25°C
1--' l- I--
1--:::- ;:::.:::: ~
1.0
----
1--- ~~
_r-
--r-- - ....
~-
---=-1-'
1--1--
10
-
50
20
I~,
... ..-
r--
I-
-.;.,;
r-
~
T-r
I-
5.0
2.0
.- ..-
-:::
.-;~~
..1-- .- '-r'
1--- 1--
TJ-IWC
$
I
I I
-Yc.=IY
--Yc.= lOY
I-
lOll
t;:: '- '......... "
......
--
200
~'
~
...... t--
500
1000
COlLECTOR CURRENT ImAl
FIGURE 2 - COLLECTOR SATURAnON REGION
1.0
I
TJ = 25°C
In
~
0
0.8
2::
~
$!
0.6
~
!
0
0.4
~
~
0.2
Ie
l\
1\"- ........
.......
0
'-'
"'""-
\."-
This graph shows the effecl of base current on collector current. po (cur·
rent gain at the edge of saturation) is the current gain of the transistor at 1
volt, and PF Iforced gain) is the ratio of lell'F in a circuit. EXAMPLE: For type
2N3734, estimate a base current II ... to ..sure saturation at a temperature of
25°C and a collector of 500 mAo
•
Observe that at Ie = 500 mA an overdrive factor of at least 2.0 is required
to drive the transistor well into the saturation region. From Figure I, it is seen
that hFE @ 1 volt is typically 54 Iguaranteed limits from the Table of Char·
acteristics can be used for "worst-case" design).
I
,\
lA _
-
500rnl
...:::I---
150mA
2 ___
54_
- 500mA/I'F
10i
3
4
flo/fl., OVERDRIVE FACTOR
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-157
I'F = 18.5 mA typ
2N3762 thru 2N3765
FIGURE 4 - TEMPERATURE COEFFICIENTS
FIGURE 3 - "ON" VOLTAGES
1.2
1.0
;
0.8
~
0.6
~
0.4
~
I
-
I I
I I I I I
V"lutl.IeIl, = 10
TJ - 2SoC
--
I-"'T I I'
-I-
I
V,,@VeE=IV
0.1
20
100
SO
30
-
r-
I I
200
live FOR VeElutl
.......
IOOOC TO Jsoc 2SoC TO 100°C _ J. ~
-1.0 -
~
-1.5
"ell; 1101
500
-2.0
1000
,..
IIV1FORV"
~
o
I
300
200
Ie. COllECTOR CURRENT (mAl
• rr
2V
400
500
600
700
800
900 1000
Ie. COLl£CTOR CURRENT (mAl
FIGURE 5 - SWITCHING TIME EQUIVALENT TEST CIRCUITS
+
SCOPE
lOOIl
-30V
10 < I, < 500 !£S
1,< IOns
I. > I!£S
DUTY CYCLE ~ 2%
o ---
1.1_
-U.IV
-I
-lI.1V
SCOPE
lOOIl
I
I
INSI6
PW=2OOns
RISE nME ~ 2ns
DUTY'CYCLE ~ 2%
TURN-OFF TIME
TURN-ON TIME
HV
"OFF" CONDITION CHARACTERISTICS
LARGE SIGNAL CHARACTERISTICS
FIGURE 7 - TRANSCONDUCTANCE
FIGURE 6 - TRANSCONDUCTANCE
1000
700
f::::;:
WCTO 2~OC
;;..-
I"'""
100
/
.---
SSOC TO 2SoC
i
./
300
2SoCTO lOOOC,~
I
I-o.s
~
10
100°C TO 17So,
a
~
0.2
I I
+1.0
+O.S
f-M i.-+-"
-
+I.S
10'
-
r- VeE 10V
~ VCE 30V
I
1/
/
SOD
/
I
I I I I
400
1
1/
TJ = IWC
102
II
/
J
300
~
I=
<.>
~
:::I
8
.!J
I
200
100
I13
~.!J
TJ = 17So
/
/
10
e
70
50
40
100°C
......
~
I I I
I I I
2so~f -
1/
j
1.0
100°C
I
30
2SoC
WC
4-
REVERSE
FORWARD
10'-'
I
20
r-
I
10
0.2
0.4
J
10-'
0.6
O.S
1.0
1.2
0.2
VIE. BASE.fMITIER VOLTAGE (VOLTS)
0.1
0.1
0.2
0.3
VIE. BASE.fMITIER VOLTAGE /VOlTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-158
0.4
O.S
2N3762 thru 2N3765
FIGURE 8 - INPUT ADMITTANCE
FIGURE 9 - EFFECT OF BASE-EMITTER RESISTANCE
10
UP
5.0 ~
-
VCE
10V
I I
V
ffi
~
~
/ I
/
1.0
c
~
0.5
ffi
0.3
e
0.2
~
Vet' o3OV
102
/./
2.0
.§
.T~· ·IWC
/
3.0
10
~
-
I
TJ ~ 175°C
I
IpOO°CJ
0.1
~.9
I
I
2SOC
-t
1.0
•
,~
550C
0.05
I
0.03
I
I
0.02
I
I
,~J"o,~~o
II II
0.01
0.2
10-1
I
I
0.4
10-2
0.6
1.0
0.8
10<
11)1
1.2
VIE. BASE·EMITTER VOLTAGE (VOLTS)
1()6
100
10'
R". EXTERNAL BASE-EMITTER RESISTANCE
(ohms)
SWITCHING CHARACTERISTICS
-TJ = 25°C
--TJ = 150°C
FIGURE 11 - RISE AND FALL TIME
FIGURE 10 - TURN-ON TIME
300
200
100
'\..
, "
'\
~ \.
I I
300 I'~
I I
200
Ic/l.~
~,!\..
'"
10
I\.
100
Vee ~ 30V
Ic/l.~ 10
~~
-'~
~
~
50
'" 0-
'\.
..
30
20
-
r-
-
r-
"
td
f\
~
I.
i'
'"
V... ~O ...
V... ~2V
.... ~
I I
10
10
,'v
r-...
Vee~
~ I"'::
" '"
r-...
50
Vee=30V
100
30
10V
'"
20
"-
200
~".
......
-
.......
I.
r--...
I
ITl'L
10
500
10
1000
20
30
50
100
200
Ic. COLLECTOR CURRENT ImAl
Ic. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-159
If
300
500
1000
2N3762 thru 2N3765
FIGURE 13 - FALL TIME
FIGURE 12 - STORAGE TIME
300
-
200
\
300
II.,=I_I~+
I-I-'
i'-
r-- t--t-
"
'-"
Ic/I, = 20
Icll,
100
10
200
I',=~-\Uf
.......
.~
!
!
~"" S
,:
~
50
::l
::f
50
Ic/ l,=20
-,
t-- .
"
I'...
r-;::
I-f-
...... f:5
lell,= 10
~
20
10
r-....
...... r-..~
10
20
10
30
50
100
200 300
Ie. CO\lECTOR CURRENT ImAl
500
10
1000
20
FIGURE 14 - CHARGE DATA
20
/
70
V
~ ~-TJ=+25°C
---. TJ=+150°C
G
1".
I
,/
d
"
"
r-
T
IT;~lL5~_ I--
r-!-,
...... 1--
C;bo
~
/
/
30
~a,
......
.s
nrn
50
If
.'
1000
500
FIGURE 15 - CAPACITANCE
I
Ic/ l, = 10
rr-
200 300
50
100
Ie. COLLECTOR CURRENT (mAl
30
100
I I Vee - 30VI
10
-,
r-....
30
20
•
.......
.$
30
Vee = 10V
'\, r'-,
~
~
I I I
1.,=-1"
1'\ ["
~ r"
100
~
I
"-'" r,
r-_
:§.
~
i!
.......
20
~
I;'
.........
~
5
1;'/
Co""
i'...
10
I'...
/
0.7
/'
7.0
V
Q
0.5
5.0
0.3
0.2
3.0
10
20
30
50
100
200
300
500
0.1
1000
Ie. COLLECTOR CURRENT. (mAl
0.2
0.5
1.0
2.0
5.0
REVERSE BIAS (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-160
10
20
50
2N3762 thru 2N3765
FIGURE 16 -
3.0
2.0
1.0
\
f\
\
\
'"
:5
iB
!
<.>
"
'\.
r--...
.........
""
............
.........
ii!
I'...
I\.
\.
"-
0.5
ACTIVE REGION SAFE OPERATING AREAS
,,~
0.3
............... f....
0.2
~
.03
~
.02
r---
10
---- --
l'-.......
r--
...........
-r-.-
-
2N3762
r---
1---
2N3764
I
2N3763
I
20
-r---
-- -
.....
I
f-- iunCliOi temperaturi'
I
............... r-..
...... ~
DC
The Safe Operating Area Curves indicate Ie VeE limits
below which the devices will not go into secondary break·
down. As the safe operating areas shown are independent of
temperature and duty cycle, these curves can be used as long
as the thermal resistance (max rating table) is also taken into
consideration to insure operation below the maximum
.01
t--
...............
..............
==
............
...........
~'
0.1
.05
50",
......... 100",
...............
.9
~
•
-
2N3765 -
I
30
40
VeE. COLLECTOR EMInER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-161
50
60
2N3798
2N3799
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Po
0.36
2.06
mWrC
1.2
6.86
mWrC
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
0.15
°C/mW
Thermal Resistance, Junction to Ambient
RruA
0.49
°C/mW
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
'=
25°C
Po
25°C
Operating and Storage Junction
Temperature Range
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
.:~~
Watt
Watts·
1 Emitter
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
60
-
Collector-Base Breakdown Voltage
(lc = 10 !-
>'
VBE(.at) @ IdlB - 10
~ 0.6
10
100
•
FIGURE 4 - "ON" VOLTAGES
FIGURE 3 - "ON" VOLTAGES
1.0
~
1.0
'C, COLLECTOR CURRENT (MA)
~0.6
~
~
>
0.2
0.2
VCE(sat) ~,'~'B = 10
I:::-- VCE (.at) @ IC/IB - 10
a
0.01
a
0.1
1.0
10
'C, COLLECTOR CURRENT (MA)
100
0.D1
0.1
1.0
10
IC, COLLECTOR CURRENT (MA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-167
100
2N3838
CASE 610A-04. STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
VCEO
40
Vde
Collector 1 to Collector 2 Voltage
Voltage Rating any Lead to Case
VC1C2
±120
±120
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Collector-Emitter Voltage
Collector Current -
•
Continuous
Ona Die
Both Die
Po
0.25
1,67
0.35
2,34
Watt
mWf'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
0,7
4,67
1,4
9,34
Watts
TJ, Tstg
9
. a. .
Collector 9
Total Device Dissipation @ TA = 25°C
Derate above, 25°C
Operating and Storage Junction
~1
Unit
-65 to +200
Emitter 2
7 Collector
4 Emitter
COMPLEMENTARY DUAL
AMPLIFIER TRANSISTORS
NPN/PNP SILICON
°C
Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted,)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
40
VCEO(NL)t
40
Collector-Base Breakdown Voltage
V(BR)CBO
60
-
V(BR)EBO
5.0
-
Vde
10
nAdc
ICEV
-
-
0,01
10
pAde
(VBE = 3.0 Vde, IC = 0)
lEBO
-
10
nAde
0,1 mAde, VCE = 10 Vde)
1,0 mAde, VCE = 10 Vde)
10 mAde, VCE = 10 Vde)(l)
150 mAde, VCE = 10 Vde)(l)
150 mAde, VCE = 1,0 Vde)(1)
hFE
35
50
75
100
50
-
Emitter-Base Breakdown Voltage
Base Cutoff Current
(lc = 10 mAde, IB = 0)
-
V(BR)CEO
Collector-Emitter Nonmatching Voltage
(lC(on) = 600 mAde, IB(on) = 120 mAde, IB(off) = 0)
(lC = 10 !lAde, IE = 0)
(IE = 10 !lAde, IC = 0)
(VCE = 50 Vde, VBE(off) = 0,5 Vde)
Collector Cutoff Current
Emitter Cutoff Current
IBEV
(VCE = 50 Vde, VBE(off) = 0,5 Vde)
(VCE = 50 Vde, VBE(off) = 0.5 Vde, TA = 150°C)
Vde
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC
(lc
(lC
(lC
(lC
=
=
=
=
=
Collector-Emitter Saturation Voltage(l)
Base-Emitter Saturation Voltage(1)
(lc = 150 mAde, IB = 15 mAde)
(lc = 150 mAde, IB = 15 mAde)
VCE(sat)
-
VBE(sat)
0,85
fr
200
-
300
0.4
Vde
1.3
Vde
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Output Capacitance
Input Impedance
(lc = 20 mAde, VCE = 10 Vde, I = 100 MHz)
(VCB = 10 Vde, IE = 0, I = 140 kHz)
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Small-Signal Current Gain
Output Admittance
Cobo
-
8.0
pF
hie
1.6
9.0
kohms
hie
60
300
-
hoe
-
50
"mho
NF
-
8.0
dB
(VCC = 10 Vde, VBE(off) = 0 Vde,
IC = 150 mAde, IB1 = 15 mAde)
td
-
(VCC = 10 Vde, IC = 150 mAde,
IB1 = IB2 = 15 mAde)
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
(lC = 1.0 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Noise Figure
(lC = 100 !lAde, VCE = 10 Vde, RS = 1.0 kohm, I = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
10
ns
40
n.
ts
-
250
ns
tf
-
90
ns
tr
(1) Pulse Test: Pulse Width .. 300 !'S, Duty Cycle" 2.0%.
t The highest value 01 collector supply voltage that may be salely used with a resistive load switching circuit in which the collector
current is 600 mAde.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-168
2N3946
2N3947
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
200
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
0.36
2.06
Watt
mWI"C
Total Device Dissipation @ TC
=
25°C
Po
1.2
6.9
Watts
mWI"C
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
0.15
°C/mW
Thermal Resistance, Junction to Ambient
RruA
0.49
°C/mW
Derate above 25°C
Operating and Storage Junction
Temperature Range
CASE 22-03. STYLE 1
TO-18 (TO-206AA)
/! ":~'~.'
3 2
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS
1
1 Emitter
GENERAL PURPOSE
TRANSISTORS
NPN SILICON
(TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lc = 10 "Ade, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 "Ade, IC = 0)
V(BR)EBO
6.0
-
Vde
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCE = 40 Vde, VOB = 3.0 Vde)
(VCE = 40 Vde, VOB = 3.0 Vde, TA
Base Cutoff Current
(VCE = 40 Vde, VOB
ICEX
=
150°C)
IBL
= 3.0 Vde)
"Ade
-
-
0.010
15
-
.025
"Ade
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 0.1 mAde, VCE
(lc
=
1.0 mAde, VCE
hFE
1.0 Vde)
2N3946
2N3947
30
60
=
1.0 Vde)
2N3946
2N3947
45
90
-
150
300
(lC
=
=
1.0 Vde)
2N3946
2N3947
50
100
(lc
= 50 mAde, VCE =
1.0 Vde)
2N3946
2N3947
20
40
10 mAde, VCE
-
=
Collector-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
(lc = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lc = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
-
-
Vdc
0.2
0.3
Vde
0.6
0.9
1.0
250
300
-
-
-
4.0
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
2N3946
2N3947
tr
Cobo
100 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-169
MHz
pF
2N3946,2N3947
ELECTRICAL CHARACTERISTICS (continued) (TA - 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Cibo
-
8.0
pF
0.5
2.0
6.0
12
Input Capacitance
(VBE - 1.0 Vdc, IC - 0, I = 100 kHz)
Input Impedance
(lC - 1.0 rnA, VCE - 10 V, 1- 1.0 kHz)
kohms
hie
2N3946
2N3947
Voltage Feedback Ratio
(lC = 1.0 rnA, VCE = 10 V, 1= 1.0 kHz)
h re
Small Signal Current Gain
(lc = 1.0 rnA, VCE = 10 V, 1- 1.0 kHz)
X 10- 4
-
2N3946
2N3947
-
10
20
50
100
250
700
1.0
5.0
30
50
-
hie
2N3946
2N3947
Output Admittance
(lC = 1.0 rnA, VCE = 10 V, 1= 1.0 kHz)
I'omhos
hoe
2N3946
2N3947
-
rb'C c
Collector Base Time Constant
(lc = 10 rnA, VCE = 20 V, 1= 31.8 MHz)
NF
Noise Fig u re
(lc - 100 1IoA, VCE = 5.0 V, Rg - 1.0 kG, 1- 10 Hz to 15.7 kHz)
200
ps
5.0
dB
35
ns
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
VCC = 3.0 Vdc, VOB = 0.5 Vdc,
IC - 10 mAdc, IB1 = 1.0 rnA
Storage Time
VCC - 3.0 V, IC - 10 mA,
Fall Time
IB1 - IB2 - 1.0 mAdc
-
td
35
ns
ts
-
300
375
ns
tl
-
75
ns
tr
2N3946
2N3947
(1) Pulse Test: PW '" 300 I'oS, Duty Cycle'" 2%.
TYPICAL SWITCHING CHARACTERISTICS
(TA = 25°C unless otherwise noted)
FIGURE 1 -
DELAY AND RISE TIME
FIGURE 2 - RISE TIME
500
300
200
j
!
500
i'.
.........
lell,
10 _
r--
300
I.......
I
~
"- r'<
lOll
I,
Vee
§
!V
~
:Ii
70
ee = 15V ~
Id
50
VOl
30
20
2V
2.0
3.0
2N394~:
~
Vee - 15 Volts
"
.......
5.0 7.0 10
Ic. COLLECTOR CURRENT ImAl
.......
-TJ -25°C
.~
.,....,
"20
--TJ ... 150°C
100
70
,..
50
30
2N3946 ~
20
,....
-
50
--;;j.:-
'" ~~
I
1.0
2.0
3.0
5.0 7.0 10
Ic. COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS,. FETs AND DIODES
3-170
IIl---
2N394r,_
loll I ...
10
30
f::
Icll,=IO
"~
oS
1J'i{
1.0
;:::
I
Voo-OV
10
r--
~
200
20
30
50
2N3946,2N3947
FIGURE 3 -
STORAGE AND FALL TIMES
2N3947
2N3946
1000
700
500
300
~
!
200
100
-··le/ l.=10····150·C
1el1, 2O--I50'C
,I,
-;:-.,.....
1000
500
}
--- '-' ., l....- -
.- --. I'-, • .......
70
300
--
-
l .....
-
-.
50
30
...
. I.
-- .
'-
.
r,.
!
I
.
.
r
A '
t-.... ..,.-r-
........
.'
200
"'-': "
....
.~
100
~ ......
50
- -'. .
,
~.
~
1,/
70
~.:.:.. F=
--Ie/l. = 1O····150·C
lell, - 20--150'C
. .. -.
700
-
If
'~
.
I
30
"
~
.........
-
-.
20
20
1.0
2.0
3.0
5.0
7.0
10
20
30
50
2.0
1.0
Ie, COllECTOR CURRENT ImAl
FIGURE 4 -
TURN-ON TIME EQUIVALENT TEST CIRCUIT
DUTY CYCLE = 2%
-/30011$
FIGURE 5 -
275
+lO.6V~
5.0 7.0
10
Ie, COLLECTOR CURRENT ImAI
---i
I,
20
30
TURN-OFF TIME EQUIVALENT TEST CIRCUIT
DUTY CYCLE = 2%
+3V
r-
3.0
r--
+3V
IO ~t:,~-~--
I
I
: "C.<4 pF
-r
_.L_
IN916
_...I
-TOTAl SHUNT CAPACITANCE OF T6T JIG All) CONNECTORS
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-171
50
•
2N3946, 2N3947
AUDIO SMALL-SIGNAL CHARACTERISTICS
FIGURE 6 - NOISE FIGURE VARIATIONS
VCE = 5.0 V, TA = 25"<:
10
14
" "" ""
~
... ;;:::
12
SOURCE RESISTANCE - 300 n
Ie - 0.5mA
-
~
II
•
400
Ie - 0.5mA
'"
::l
-
II-
i..:
i'
r--.
/""
"\
z:
I
/
1~,-1001'-'
1111 II
,/
,rii
SOURCE RESISTANCE - 2K
Ie - SOl'-'
II IIII
200
1\
'"
a
r-- I"--.
r- rSOURCE RESISTANCE - i;"1Ic -100,'"
100
V
10
~
-r-.
r-
III
f-IKC'
I I ""
,K
2K
4K
10K
20K
40K
IIII
lOOK
100 200
400
f. FREQUENCY (HzI
1K
2K
4K
10K
20K
40K lOOK
R,. SOURCE RESISTANCE (OHMSI
h PARAMETERS
VCE
FIGURE 7 -
~
FIGURE 8 -
CURRENT GAIN
300
200
= 10 V, TA = 25"<:, f = 1.0 kc
I
--
100
SO
SO
1/
./
2N3947
-
70
70
2N3947 -
~i"""
OUTPUT CAPACITANCE
100
i"""
.....
2"3946 -
/
V
V
10
.....
2N3946
I
30
0.1
0.2
2.0
1.0
Ie. COlLECTOR CutItIENT (mAdel
5.0
0.5
FIGURE 9 -
5.0
10
INPUT IMPEDANCE
FIGURE 10 -
VOLTAGE FEEDBACK RATIO
10
"-
.......
10
5.0
......
~
.J
2.0
1.0
......
20
E
0.5
Ie, COllECTOR CURRENT ImAdcI
SO
...
0.2
0.1
10
2.0
.........
1.0
2N3946
.
"
I
o
2N3947:
........
2N3947
......
I.........
"-
I--..
1.0
0.5
......
t'-
~
1~'1
2N3946
0.7
0.2
r-
0.5
0.1
0.2
0.5
\.0
2.0
5.0
10
0.1
0.2
0.5
1.0
2.0
Ie. COlLECTOR CURRENT (mAde)
Ie. COlLECTOR CURRENT ImAdcI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-172
5.0
10
2N3946,2N3947
FIGURE 11 - CURRENT GAIN CHARACTERISTICS
2N3946
200
'2M3946' _
I.
100
!i
I.1
SO
20
T,-17S"C
-
T,-IOOoC
ISoC
T,-
I""'-
- ""'"
T, I SsoC
-
0.2
O.S
2.0
1.0
-
IoiOlII.
T, - 2S"C
--
0.1
l-
Veo-IYOft
S.O
10
20
SO
Ie, COLLECTOR CURRENT (mAl
2N3947
·soo
T,
300
~
is
::.
i3
.1
12N3947I -
Ilsoc
T,
100°C
T,
2SoC
r-
-
200
100
T,
WC
T,
I ss oc
r-r--
lvalt _
Ve•
~
...........
r-.....'
r--.... ~""' ~
70
....... "\.
SO
"'
30
0.1
o.s
0.2
s.O
2.0
1.0
so
20
10
Ie. COLLECTOR CURRENT (mAl
FIGURE 12 - CAPACITANCE
FIGURE 13 - CHARGE DATA
5000
10
7.0
S.o
i
!I
4.0
r- i"'-r-
we
-2N3946 - - lSOoc
2000 - 2N3947 -.- 25"C
---- ISO°C
1000
L
J
T, - 2SoC
.......
Ci •
i'-r-.
I'"-- i"'-i"'-or-
......
3.0
I .....
"
i'~
~
500
-Or
l!I
r-.
Iu
c..
~~
200
d
2.0
.....
,
100
J
SO
==a..~ ~
~ f'::'"
,'"
. " l ......
.
.-
.
~
BOTHTlP!S Vcc=40V
.
Vcc- ISV
.L
.
'"
..-
.~o:;;..
20
10
1.0
0.1
02
0.5
1.0
2.0
5.0
10
20
SO
1.0
2.0
3.0
S.O
7.0
10
Ie:. COllECTOR CURRENT (mAl
REVERSE BIAS VOlTAGE MllTSl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-173
20
30
SO
•
2N3946,2N3947
FIGURE 14 -
COLLECTOR SATURATION REGION
2N3946
10
Ie =3 mA
l!
!
08
~
0.6
le= 10mA
2N3946 _
le=50mA
le=30mA
TJ =25'C-
\
~
,,
\
f5
I
...,
,2
\
0.4
~
I......
"'
0.2
0.01
002
0.1
0.05
0.5
02
1.0
20
5.0
10
I" BASE CURRENT 'mAl
•
2N3947
1.0
l!
!
~
f5
I
~.
~
0.8
-
le- 3mA
Ie-lOrnA
2N3947
le- 50mA
le" 3OmA
TJ
-
25'C
0.6
\
0.4
001
"'
......
"'
0.2
~
002
0.05
0.1
02
1.0
05
20
5.0
10
I" BASE CURRENT 'mAl
FIGURE 15 -
1.0
.
-
··2N3946
-
VIi''''1 @lell. = 10
0.7
. 0.6
-'
~
-~.. -
,-
~,
li..-
~
, ...
i-"
,:::::'
I
'- .-t -t
I
~
~ -1.5
II
"I-'
-
01
O.S
1.0
Z.O
S.O
10
Ie. COllECTOR CURREIIT (mAl
V-
S.,IarV"''''1
ZS·C TO IWt
-z,S
ilJll
0.1
/
I-z.o
300
~ 200
-
~
~ 100 t=
S
~
10",
"\
70
50
0
20
0.5 0.7
Tp 200.C _de
BONDING WIRE LIMITED
THERMALLY LIMITED
'\
r'l..L
"-
....
:E1~~~5:~~!I:~~~~~~~~~EDI
'"
\
PU LSE DUTY CYCLE" 10%
·SECOND BREAKOOWN FOR de:
DO NOT OPERATE ABOVE THERMAL
2N4013
LIMITATION FOR TIMES GREATER
THAN 1.0 SECOND
2N4014
1.0
2.0
3.0
5.0
7.0
10
20
30
50
VCE. COLLECTDR·EMITIER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-178
2N4013,2N4014
TYPICAL DC CHARACTERISTICS
FIGURE 2 - DC CURRENT GAIN
FIGURE 3 - "ON" VOLTAGES
400
z
14
~J' i2&OC
200
r-
;;:
~ ~ 25°C
'">~
'"
B
100
c
60
u
~
80
~TJ'2&OC
12
VCE' 1.0 V
in
r-- r-- i'-.
1.0
-
c;
c
2! 0.8
w
'"«
c;
'">
I - - t--.-&50C
t---.
:> 0.4
r-....
40
0.6 I="VBElsa,I@ICIIB' 10
I--'"
...........
0.2
o
20
10
20
50
100
200
500
1000
~VCElsat! @ICIIB' 10
10
50
20
IC. COLLECTOR CURRENT ImAI
FIGURE 4 - COLLECTOR SATURATION REGION
~
w
TJ,2&OC
\
\
0.4
>-
8
0
0.&
II
1.0
2.0
1000 mA
I I
10
500mA
50
~
+05 -'UVC FOR VCElsat!
I-'
.-
b--r-
-
...... 1--'"
~ -15 !--UVB FOR VBE
300 rnA
20
+1.0
~ -05
>~ -1.0
>-
I-'
~ -2.0
I II
5.0
~
8
arOmA
r-....
-
IC -100 rnA
~
......
I"-
..........
0.2
>
,
1
0.6
c
~
'APPLIES FOR IcllB < hFEI2
..§. +15
>>-
~
'"
3:
~
0
ffi
~ +20
0.8
c;
>
1000
+25
c
2!
500
200
FIGURE 5 - TEMPERATURE COEFFICIENTS
10
C;
'"
«
100
IC. COLLECTOR CURRENT ImAI
-2.5
100
200
500
10
20
30
lB. BASE CURRENT ImAI
50
100
200
300
500
1000
IC. COLLECTOR CURRENT ImAI
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 7 - CAPACITANCE
FIGURE 6 - CURRENT-GAIN - BANDWIDTH PRODUCT
:r
&00
100
0
VCE' 10 Vdc
t, 100 MHz
TJ' 25°C
~
t;
=>
c 300
~:c
V
[; 200
t....-:
~
.......
z
0
V
Z
0
~ 100
.,:.
~
~
70
B
!::'
0
&40
r--.,Cib
1"'--
0
........
iii
c
:liI
TJ'250C
0
0
--
Cob
0
60
30
10
20
40
60
100
200
400
01
IC. COLLECTOR CURRENT ImAI
0.2
05
1.0
20
5.0
10
VR. REVERSE VOLTAGE IVOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-179
20
50
100
•
2N4013, 2N4014
FIGURE 8 - TURN-ON TIME
200
100
FIGURE 9 - TURN-OFF TIME
200
ICIlS" 10
TJ" 25 0 C
~
100
50
w
'"
:g
tr@VCC"'10Vdc
30
.......
20
;::
VCC" 30 Vdc
w
I--'
10
V .......
.....
~
10
10
20
30
50
100
200
300
500
l"'-
i-'
,/
20
30
Ie. COLLECTOR CURRENT (mAl
•
........
/'/
10
1000
Ii
r-
r-....
30
I
ts@ ICIIB 20
ICIIB" 10
~
td @VSE(off) "0 V ,..VSE(oft)" 3.8 Vdc
Vee" 30 Vdc
3.0
2a
lelia -10
T
TYT~
I
70
50
20
50
Vee" 30V
;::
~
u
~
10
0
f-
a
Vin+ 9 .7V
'"0
1.0
8
0.1
~
Ir"<1 Dns
PW>200ns
A V
100
-
==
~
.;0
30
10
~
V
14¥
~
Duty Cyclec.20%
17
0.01
Generator Source Impedance "!i0!!
Pulse Generator EH1421 Timing Umt and 1121 Pulse Oliver
OSCilloscope TektrOniX 661 Sampling Scope
r- VCE" 50 V -...
I:::
1=
o
20
40
60
BD
100
120
140
TJ. JUNCTION TEMPERATURE (OC)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-180
160
180
200
2N4015
2N4016
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector 1 to Collector 2 Voltage
Voltage Rating and Lead to Case
VC1C2
±200
±200
Vdc
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IB
100
mAde
IC
300
mAde
Rating
Base Current
Collector Current -
Continuous
One Ole
Both Die
Total Device Dissipation @ TA
Derate above 25·C
~
25·C
Po
400
2.29
500
2.86
mWrC
Total Device Dissipation @ T C
Derate above 25·C
~
25·C
Po
0.85
4.85
1.4
8.0
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
mW
CASE 654-07, STYLE 1
Emitter 3
5 Emitter
DUAL
AMPLIFIER TRANSISTORS
PNP SILICON
Watts
·C
Refer to MD2905A for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(1)
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
60
-
Vde
Collector-Base Breakdown Voltage
(lC ~ 10 pAde, IE ~ 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 10 pAde, IC ~ 0)
V(BR)EBO
5.0
-
Vde
-
10
10
nAde
pAde
-
0.1
pAde
80
120
135
115
-
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 50 Vde, IE ~ '0)
(VCB ~ 50 Vde, IE ~ 0, TA ~ + 150·C)
ICBO
Emitter Cutoff Current
(VEB ~ 3.0 Vde, IC ~ 0)
lEBO
ON CHARACTERISTICS
DC Current Gain
(lC ~ 0.01 mAde, VCE ~ 5.0 Vde)
(lc ~ 0.1 mAde, VCE ~ 5.0 Vde)
(lC ~ 1.0 mAde, VCE ~ 5.0 Vde)
(lC ~ 50 mAde, VCE ~ 5.0 Vde)(1)
hFE
Collector-Emitter Saturation Voltage(1)
(lc ~ 50 mAde, IB ~ 2.5 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC ~ 50 mAde, VCE ~ 2.5 Vde)
VBE(sat)
-
-
-
350
-
0.25
Vde
1.0
Vde
SMALL-SIGNAL CHARACTERISTICS
fr
Current-Gain - Bandwidth Product(2)
(lC ~ 50 mAde, VCE ~ 20 Vde, I ~ 100 MHz)
(lC ~ 1.0 mAde, VCE ~ 10 Vde, I ~ 20 MHz)
MHz
200
60
600
Cobo
-
8.0
pF
Cibo
-
25
pF
Input Impedance
(lc ~ 1.0 mAde, VCE ~ 10 Vde, I ~ 1.0 kHz)
hie
-
11.5
kohms
Voltage Feedback Ratio
(lC ~ 1.0 mAde, VCE ~ 10 Vde, I ~ 1.0 kHz)
h re
-
15
X 10-4
Small-Signal Current Gain
(lC ~ 1.0 mAde, VCE ~ 10 Vde, I ~ 1.0 kHz)
hIe
135
420
-
Output Capacitance
(VCB ~ 10 Vde, IE
Input Capacitance
(YEB ~ 0.5 Vde, IC
~
~
0, I
0, I
~
~
-
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-181
•
2N4015,2N4016
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted)
Characteristic
Output Admittance
(lC = 1.0 mAde, VCE
=
Noise Figure
(lC = 0.03 mAde, VCE
10 Vdc, f
=
=
Symbol
Min
=
10 kohms, f
=
1.0 kHz, BW
Unit
BO
Io'mhos
4.0
dB
0.9
1.0
-
-
5.0
2.5
NF
hFE1/hFE2
1.0 kHz)
5.0 Vde, RS
Max
-
hoe
= 200 Hz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio
(lC = 0.1 mAde, VCE
= 5.0 Vde)
Base-Emitter Voltage Differential
(lC = 0.1 to 1.0 mAde, VCE = 5.0 Vde)
Base-Emitter Voltage Differential Gradient
(lC = 0.1 to 1.0 mAde, VCE = 5.0 Vde, TA
(lC
= 0.1
to 1.0 mAde, VCE
IVBE1-V BE21
2N4015
2N4016
=
= 5.0 Vde, TA =
-55 to +25'CI
2N4015
2N4016
+ 25'C to +125'C)
2N4015
2N4016
a/VBE1-VBE21
-25
'\
--
1,\
~
t-
l"-
0
50
100
150
200
CASE OR AMBIENT TEMPERATURE (TC OR TA)-OC
FIGURE 4 - TYPICAL SATURATION·VOLTAGE
CHARACTERISTICS
JURRE~ =' 10
COLLECTOR-TO-BASE
OllAGE -40 V
-20 V
-.
S. 10
~
COllJCTOR
(IC)
BASE CURRENT (IB)
10 -s
0
AMBIENT TEMPERATURE (TA) = 25°C
10-1
<.>
0
0:
-.
~
8 10-.
V
10
V
0
V
~
25
50
75
100 125 150 175
TJ. JUNCTION TEMPERATURE (OC)
0
200
FIGURE 5 - TYPICAL SMALL·SIGNAL BETA
CHARACTERISTICS
V
-0.5
-0.15
-0_25
-0.35
VCE(sa!). COllECTOR-TO-EMITTER SATURATION VOLTAGE (V)
FIGURE 6 - MAXIMUM SAFE OPERATING AREAS (SOA)
COLLECTOR-TO-EMITIER VOLTAGE
(VCE) ~ -10 V
FREQUENCY = 20 MHz
AMBIENT TEMPERATURE (TA) ~ 25°C
1.
IC MAX.
o (CONTINUOUS)
1 I' ~JLSED OPERATlb~'
r::-c-50 I'S
liS'
300 !is
r--r--- 5OOl'S
r---r--1.0 mS
DC OPERATION
0
[
0
.......
i'"""
) [ [
"
CASE TEMPERATURE (TC) ~ 25°C
1 (CURVES MUST BE DERATED LINEARLY
. WITH INCREASE OF TEMPERATURE)
0
==
0
-1.0
-10
-100
-1000
IC. COllECTOR CURRENT (rnA)
VCEO MAX
(2N4037)
JlU
IJl
7.0r--5.0F-
r==~1D0
0
0
~
=40 V
NORMAuZEO
POWER
MULTIPLIER
3.0
"
12rl
1.0
VCEO MAX
036)
(2~
I III III
'FOR SINGle I , I I 'Ell
-0.0 1 NONREPETITIVE PULSE
-1.0
-10
-100
VCE. COLLECTOR·TO-EMITIER VOLTAGE (V)
MOTOROLA SMALL·SIGNAL TRANSISTORS. FETs AND DIODES
3·186
=-65 V
II I
ill
2N4208
2N4209
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
, 1t .:.-()'' ""'
Symbol
2N4208
2N4209
Unit
Collector-Emitter Voltage
VCEO
12
15
Vde
Collector-Base Voltage
VCBO
12
15
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
200
mAde
Po
0.36
2.06
mWrC
1.2
6.S
mWrC
-65 to +200
°c
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
= 25°C
25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
"m'~'
II
Watt
SWITCHING TRANSISTORS
Watts
PNP SILICON
Refer to MM4257 for graphs.
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
(lC
(lC
(lC
=
=
= 3.0 mAde, IB = 0)
2N420B
2N420S
V(BR)CEO
12
15
= 0)
2N420B
2N420S
V(BR)CES
12
15
-
2N420B
2N420S
V(BR)CBO
12
15
-
V(BR)EBO
100 !LAde, VBE
100 !LAde, IE
= 0)
(IE = 100 !LAde, IC = 0)
= 6.0 Vde, VBE = 0)
= B.O Vde, VBE = 0)
= 6.0 Vde, VBE = 0, TA = 125°C)
= B.O Vde, VBE = 0, TA = 125°C)
= 6.0 Vde, VBE = 0)
= B.O Vde, VBE = 0)
4.5
5.S
2N420B
2N420S
2N420B
2N420S
ICES
-
-
2N420B
2N420S
IB
-
-
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Current
(VCE
(VCE
(VCE
(VCE
(VCE
(VCE
-
-
-
Vde
-
Vde
-
Vde
-
10
10
5.0
5.0
1.0
1.0
Vde
nAde
!LAde
nAde
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAde, VCE
(lc
=
10 mAde, VCE
= 0.3 Vde)
(lC
=
10 mAde, VCE
= 0.3 Vde, TA =
(lC
=
50 mAde, VCE
=
1.0 Vde)(1)
Collector-Emitter Saturation Voltage
(lC = 1.0 mAde, IB = 0.1 mAde)
(lC
(lC
=
10 mAde, IB
=
= 50 mAde, IB =
hFE
= 0.5 Vde)
1.0 mAde)
5.0 mAde)(1)
-55°C)
-
-
2N420B
2N420S
15
35
-
-
2N420B
2N420S
30
50
-
-
120
120
2N420B
2N420S
12
20
-
2N420B
2N420S
30
40
-
-
2N420B
2N420S
-
-
-
0.13
0.15
2N420B
2N420S
-
-
-
0.15
0.18
2N420B
2N420S
-
-
0.5
0.6
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 1.0 mAde, IS = 0.1 mAde)
(lC = 10 mAde, IS = 1.0 mAde)
(lC = 50 mAde, IS = 5.0 mAde)(1)
-
VBE(sat)
Vde
Vde
0.75
-
0.7
0.B6
1.1
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-187
-
O.B
O.SO
1.5
•
2N4208,2N4209
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
700
850
1000
1100
-
2.0
3.0
pF
2.0
3.5
pF
ns
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Sandwidth Product
(lC = 10 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCS = 5.0 Vdc, IE
=
=
140 kHz)
input Capacitance
(VSE = 0.5 Vdc, IC
= 0, f =
140 kHz)
0, f
2N4208
2N4209
IT
MHz
Cibo
-
ton
-
10
15
td
-
6.0
10
ns
5.0
15
ns
12
16
15
20
ns
12
17
15
20
ns
6.0
8.0
10
10
ns
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
DelavTime
(VCC = 1.5 Vdc, VSE = 0,
IC = 10 mAde, IS1 = 1.0 mAde)
Rise Time
tr
Turn-Oft Time
Storage Time
(VCC = 1.5 Vdc,
IC = 10 mAde,
IS1 = IS2 = 1.0 mAde)
Fall Time
Storage Time
(lC ~ 10 mAde, IS1 ~ 10 mAde, IS2 ~ 10 mAde)
2N4208
2N4209
toft
2N4208
2N4209
ts
2N4208
2N4209
tf
ts
2N4208
2N4209
-
-
-
(1) Pulse Test: Pulse Width"" 300 p,S, Duty Cycle"" 2.0%.
(2) IT is defined as the frequency at which ihfei extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-188
-
-
ns
15
20
2N4234
MAXIMUM RATINGS
Symbol
2N4234
2N4235
2N4236
Unit
Collector-Emitter Voltage
VCEO
40
60
80
Vdc
Collector-Base Voltage
VCBO
40
60
80
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IB
0.2
Vdc
IC
1.0
3.0'
Adc
Rating
Base Current
Collector Current -
Continuous
Total Device Dissipation @ TA =
25°C
Derate above 25°C
Po
Total Device Dissipation @J TC =
25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
thru
2N4236
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
lit
Watt
1.0
5.7
mWrC
6.0
34
mWrC
-65 to +200
°c
Watts
3
~I[
~~"
.."
1 EmItter
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
VCEO(sus)
40
60
80
-
-
1.0
1.0
1.0
Max
Unit
OFF CHARACTERISTICS
2N4234
2N4235
2N4236
Collector-Emitter Sustaining Voltage(1)
(lC = 100 mAde, IB = 0)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vde, VBE =
(VCE = 60 Vde, VBE =
(VCE = 60 Vde, VBE =
(VCE = 30 Vde, VBE =
(VCE = 40 Vdc, VBE =
(VCE = 60 Vdc, VBE =
ICEO
2N4234
2N4235
2N4236
=
=
=
150°C)
150°C)
150°C)
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
(VCB = 60 Vde, IE = 0)
(VCB = 80 Vde, IE = 0)
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
-
ICBO
Emitter Cutoff Current
(VBE = 7 Vde, IC = 0)
-
2N4234
2N4235
2N4236
mAde
0.1
0.1
0.1
1.0
1.0
1.0
mAde
-
lEBO
Vde
-
mAde
ICEX
1.5 Vde)
1.5 Vde)
1.5 Vde)
1.5 Vde, TC
1.5 Vdc, TC
1.5 Vde, TC
-
-
0.1
0.1
0.1
0.5
mAde
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = 250 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vdc)
(lC = 1.0 Adc, VCE = 1.0 Vde)
hFE
40
30
20
10
Collector-Emitter Saturation Voltage(1)
(lC = 1.0 Adc, IB = 125 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 1.0 Adc, IB = 100 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 250 mAde, VCE = 1.0 Vdc)
VBE
-
-
SMALL-SIGNAL CHARACTERfsTICS
Current-Gain - Bandwidth Product
(lC = 100 mAde, VCE = 10 Vde, f
=
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-189
-
-
150
-
-
0.6
Vde
1.5
Vdc
1.0
Vdc
•
2N4234 thru 2N4236
ELECTRICAL CHARACTERISTICS (continued) (TA
~
25·C unless otherwise noted.)
Characteristic
Output Capacitance
(VCB = 10 Vdc, IE
Symbol
Min
Max
Unit
Cobo
-
100
pF
hfe
25
-
-
= 0, f = 100 kHz)
Small-Signal Current Gain
(lC = 50 mAde, VCE = 10 Vde, f
= 1.0 kHz)
(1) Pulse Test: PW '" 300 p.s, Duty Cycle'" 2.0%.
"Indicates Data in addition to JEDEC Requirements.
RGURE 1 - POWER-TEMPERATURE DERATING CURVE
~
~ .....
............ ..........Te
..........
•
I'.....
...............
TA
o
o
~
ISO
100
125
nMPERATURE I·CI
Safe Area Curves are Indicated by Figure 2.
All limits are applicable and must be observed.
75
50
25
175
200
FIGURE 2 - ACTIVE-REGION SAFE OPERATING AREAS
3.0
2.0
.
~'.
['..
'-...
...
Ii: 1.0
...'"
~
5ms:".......
.
de ......
~ 0.7
~
...
0.5
TJ = 200·C
-::::.:- SECONDARY BREAKDOWN LIMITATION
••••
THERMAl LIMITATION AT Te = 25·C.
0.2
t-!BASE.EMITIER OISSIPATION IS
PERCEPTIBLE ABOVE Ie = I AMP).
.J} 0.1
=>
!...
0.3
2.0
3.0
5.0
7.0
~
...~
-,
'"-" ,
50011'-'
......
The Safe Operating Area Curves indio
cate Ie - VeE limits below which the device
will not enter secondary breakdown. Col·
lector load lines for specific circuits must
fall within the applicable Safe Area to
avoid causing a catastrophic failure. To
insure operation below the maximum TJ,
power·temperature derating must be
observed for both steady state and pulse
power conditions.
.......
r...
~
r-...
0.07
0.05
0.03
1.0
-~
.........
"I.
10
LIMIT FOI,
214234
214235
21423830
20
50
70
100
VeE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-190
2N4234 thru 2N4236
"OFF" REGION CHARACTERISTICS
LARGE SIGNAL CHARACTERISTICS
AGURE 3 -
/
700 f-- Ve•
S.Of-
~
8
.Ji
/
1/
/
300
I~
I
/
I
/
/
100
I
I
I
I
II
II
2.0
TJ = +17SoC
1.0
If- 1;-/
I
I
I
ITJ = -SsoC
II
40V
Ve•
I
J
II
200
TRANSCONDUCTANCE
0
2V
500
l
FIGURE 5 -
TRANSCONDUCTANCE
1000
TJ = +2SoC
I
I
I
7
1
I
'I
I
TJ = +lOO°Cf
10
50
TJ = +lOO°C
r--. 01
TJ
I
30
I
TJ = +l7SoC
o
I
AGURE 4 -
1.0
1.2
0.01
0.2
0.1
0.2
0.4
0.3
V... BASE EMITTER VOLTAGE IVOLTSI
O.S
Ve.
0
2V
/
/
I
/
50
.....
11'/
0
I
0
I
/ II
0
0
I
I
I
I
TJ = +IOO°C
0
........
""".......
...... r-..,.
~
Ic=lc~
~
TJ = +25°C
I
I
TJ=+lWC
0.0S
0.2
I
II
""""'-
II
~
2.0
I
1.0
1.2
1.0
25
~
"
"'
""
'\.
'\
50
100
125
75
TJ. JUNCTION TEMPERATURE 1°C)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-191
"'
"'-
"'
I
0.6
0.8
0.4
V... BASE·EMITTER VOlTAGE IVOlTSl
.......
le=IOxl~
"'-
I
I
..........
.......... le=2 xleES
I
O. 2
40 V
...........
I
'rI- --'
O. S
.........
I
II I-H-
0
........
..........
TJ = -WC
0.6
EFFECTS OF BASE-EMITTER RESISTANCE
100
50 r--- VeE
o
0.1
FIGURE 6 -
INPUT ADMITTANCE
100
O. I
./
0.02
0.6
0.4
0.8
V••• BASE·EMITTER VOLTAGE IVOLTSI
0.2
iT
I - -iEVjSE-FiWARf-
I
10
,::= F
+25°C
O.OS
I
20
•
II
I
150
175
2N4234 thru 2N4236
FIGURE 7 -
200
-
CURRENT GAIN
~ ~17J"C
t::-~
100
~
70
ffi
50
~
g
1
TJ
ITJ
+2S"C
TJ~
--
-SS"C
3D
-- ---.....
-"';::""'l1lI
t--...
-.....-~
........ ~ ~
I"'--..
-
:""
I-...
20
10
10
•
2V
VeE
+100"C
20
30
100
Ie. COllECTOR CURRENT (mAl
300
200
IS
~b
...... ......
f::::
500
1000
SATURATION REGION CHARACTERISTICS
FIGURE 8 -
COLLECTOR SATURATION REGION
2.0
1.8
;
~
~
~
TJ~
+2S"C
1.6
1.4
1.2
Ic~
Ic~
Ie ~ SOOmA
Ie ~250mA
100mA
1000mA
1.0
0.8
~ 0.6
,; 0.4
0.2
o
\
,
\
\
\.
\.
I'-.
1.0
2.0
3.0
5.0
7.0
10
20
3D
50
70
100
200
I,. BASE CURRENT ImA)
FIGURE 9 -
1.0
0.8
;
"ON" VOLTAGES
I II
TJ ~ +2S"C
VlEly'l @ Ie/I, ~ 10
-
0.6
:±±:t:::=
V.. @VCE
FIGURE 10 -
-- -
+1.
o
or
....
0.01
I
I
(JSS"C I! +175)
~ for V'r.::VCEI"'I @ Ie/I, ~ 10
...........
-2.
0.02 0.03
0.2 0.3
0.05 0.07 0.1
Ie. COllECTOR CURRENT IAMPSI
"i+25-C 10 +lOO"C~
I SS"C 10 +2S"C)
I
I
To compute saluralion ..lta.es,
V_I;"I @operalin.TJ ~Lly'l @+2S"C+ 9v_loperalin.TJ -2S"C)
Use
appropriate
9v
fOl
.oltaie
of
interest.
5
Use apprDpliale curve fOl lemperalure ranle of Inlerest.
0
o
1+lIOO"C 10 +lWC)
1 ____ -
0
2V
0.4
O. 2
,I
5,- 9vc for VCE\"'I
~
i
.I
TEMPERATURE COEFFICIENTS
0.5 0.7 1.0
:~I
o
~
200
....-
~
~
500 ~ ~
Ie. COllECTOR CURRENT {mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-192
~
~
~
2N4234 thru 2N4236
DYNAMIC CHARACTERISTICS
FIGURE 11 -
3.0
2.
~C-60V
--
1'\
o
----
~~~~~
O. 7
1.
i
r-
Vee
2~
.lJlIJ1U
7.0
...... I....
- - - - TJ - +l5O'C
- ,~
3.Orf-.
,
!'"
r-.... t::fo:i :~.:
J~"'"
...
~ ~-
I
~ t-.......
..
-,
2.0
I'
>.;
IclJ,=lb£
I.0
~ :~
7 1,ell,-20
~~ " ,
~ o. 7
f\.
'" O.3
I;;
!,of\.
•
O. 5
1\
r"'-.I'o
r--.t\
24 V. Vob
0
O. I
0.07
II
TJ - +k5"C
TJ - +l50"C
5.0
4.0 I'l1o.
I'\.ee - 60 V. Vob - 2 V
O.
I
STORAGE TIME
10
24 V
I
O. 5
FIGURE 12 -
TURN-ON TIME
O.3
O.2
r-Vcc
0.05
10
20
30
""
"""'- ......
200 300
50 70 100
Ie. COLLECTOR CURRENT (mAl
FIGURE 13 -
O. I
10
500 700 1000
20
200 300
50 70 100
Ie. COllECTOR CURRENT (mAl
30
CAPACITANCE
FIGURE 14 -
5.0
300
FALL TIME
~
3.0
r--r--.... ...
2.
Cob
~
~
o '\
,
[\',
,
0
lelll=l~
~r-,
\
~'....
"
'\.
70 i--
....
'\
C;b
"I'.i'\
50
30
0.1
0.2
0.5
O.7
,
1.0
2.0
5.0
VR. REVERSE VOLTAGE (voLTSI
20
50
· .... 1...
-
'r-.
20
30
50
70
100
200
Ie. COllECTOR CURRENT !mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-193
....
r-....~
I"r-....
o.3
10
...
~
...
1\
O. 2
10
r-.
"-
O.5
"....
TJ = +2S'C
TJ = +lSO'C
\,
~
~"
II
-----
'\ ,lell,=20
200
500 700 1000
300
500 700 1000
MAXIMUM RATINGS
Symbol
2N4237
2N4238
2N4239
Unit
Collector-Emitter Voltage
Rating
VCEO
40
60
80
Vde
Collector-Base Voltage
VCBO
50
80
100
Vde
Emitter-Base Voltage
VEBO
6.0
Base Current
IB
500
mA
Collector Current - Continuous
IC
1.0
3.0'
Ade
Total Device Dissipation
@TA=25'C
Derate above 25'C
PD
1.0
5.3
Watt
mWI"C
Total Device Dissipation
@TC=25'C
Derate above 25'C
PD
6.0
34
Watts
mWI"C
-65 to +200
'c
Operating and Storage Junction
Temperature Range
TJ, Tstg
2N4237
thru
2N4239
Vde
CASE 79-04, STYLE 1
TO·39 (TO·205AD)
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
•
Characteristic
Thermal Resistance, Junction to Case
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l)
(lC = 100 mAde, IB = 0)
Collector Cutoff Current
(VCE = 50 Vde, VEB = 1.5 Vde)
(VCE = 80 Vde, VEB = 1.5 Vde)
VCEO(sus)
2N4237
2N4238
2N4239
ICEX
2N4237
2N4238
(VCE = 100 Vde, VEB = 1.5 Vde)
(VCE = 30 Vde, VEB = 1.5 Vde, TC = 150'C)
2N4239
2N4237
(VCE = 50 Vde, VEB = 1.5 Vde, TC = 150'C)
(VCE = 70 Vde, VEB = 1.5 Vde, TC = 150'C)
2N4238
2N4239
Collector Cutoff Current
(VCB = Rated VCBO, IE = 0)
(VCE = Rated VCEO, IB = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vde, IC = 0)
lEBO
40
60
80
-
-
0.1
0.1
Vde
mAde
-
0.1
1.0
1.0
1.0
mAde
0.1
.07
-
0.5
30
30
30
15
150
-
mAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 50 mAde, VCE = 1.0 Vde)
(lC = 250 mAde, VCE = 1.0 Vde)
(lC = 500 mAde, VCE = 1.0 Vde)
(lC = 1.0 Ade, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage(l)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 0.1 Ade)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 1.0 Ade, IB = 0.1 Ade)
VBE(sat)
-
Base-Emitter On Voltage(l)
(lC = 250 mAde, VCE = 1.0 Vde)
VBE(on)
-
Vde
0.3
0.6
1.5
Vde
-
1.0
Vde
Cobo
-
100
pF
Small Signal Current Gain
(lC = 100 mAde, VCE = 10 Vde, 1= 1.0 kHz)
hIe
30
-
-
Current Gain - High Frequency
(VCE = 10 V, IC = 100 mA, I = 1 MHz)
Ihlel
1.0
-
-
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vde, IC = 0, 1= 0.1 MHz)
(1) Pulse Test: Pulse W,dth"" 300 1'1', Duty Cycle 2.0%.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
3-194
2N4237 thru 2N4239
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
10
en 8.0
~
~
z:
6.0
0
~
c;;
.......
........
i'-.
en
2i
4.0
f5
...........
~
.........
i"......
Ci
"- 2.0
1"..... .....
o
o
20
40
60
80
100 120
140
Te , CASE TEMPERATURE (OC)
.....
160
•
............
180
200
Safe Area Curves are indicated by Figure 5. All limits are applicable
and must be observed.
SWITCHING CHARACTERISTICS
FIGURE 2 -
SWITCHING TIME EQUIVALENT CIRCUIT
Vee
FIGURE 3 -
o--M.--.,
RL
3.0
CJd < ..
\: ...... r-.-
Ic. COlLECTOR CURRENT ImAl
I. 0
_
Po is the transistor current 1I11n at the edle of saturation obtained
~
30
I
I~ 30m~
r-... to-...
20
2S'C
I
...... r-...
0.6
~
30
Ic, COLLECTOR CURRENT (mAl
:;-o
8v. for VIE
- SS'C to 2S'C
10
20
Ic, COLLECTOR CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-199
30
2N4260, 2N4261
FIGURE 5 -
CURRENT-GAIN -
5000
BANDWIDTH PRODUCT
1
...:
po
VeE
i,..-:~
4V
r-
Ii;
i!
!2 50
8
~
k::::: ~
25'C--
TJ
~ 70
.-:
~
/
COLLECTOR-BASE CONSTANT
VeE -IOV
-T}-25 C
~
AGURE 6 -
100
-
~
i!!
~
30
~,
20
~
4V
VeE
1'-VeE-IOV
~
500
1.0
2.0
3.0
5.0
7.0
10
20
10
1.0
30
2.0
3.0
Ie. COLLECTOR CURRENT ImAI
AGURE 7 -
5.0
7.0
10
20
30
5.0 7.0
10
Ie. COLLECTOR CURRENT (mAl
AGURE 8 -
SWITCHING TIMES
CAPACITANCE
10
7.0
5.0
Cob
3.0
r--
2.0
r-
C"
1.0
O. 7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7
2.0
1.0
FIGURE 9 -
CUT-OFF CHARACTERISTICS
0
0
20
V~t
.......
i"""-o
I0
7. 0
~ 5.0
~
:~ 2.0
-
l
........
==
'§. o. I
2.0
3.0
5.0
7.0
I II
L
II
I
-...;::::
1""::::::
I.0
I I
T,'-175 C!
1.0
-...::::
I
/
VeE -IOV
r- -
I-- TURN'()N
DELAY
TURN.()fF
DELAY
O.7
o.5
O.3
1.0
2V r-
TJ - 25'C
R,- RL ::
V;. V... ~
!'-..FALL
RISE
~ 3.0
3.0
VR• REVERSE VOLTAGE (VOLTS)
Ie. COLLECTOR CURRENT (mAl
10
20
30
Ie. COLLECTOR CURRENT (mA)
TJ -IOO'C
~
~
I
I
Vee
I
I
I
/
II
/
.Ji 0.0I
TJ -25'C
I
0.00 I
RE
I
V"
V",_V-,_2V V._IY Rei-ita
~
~
~
~
mA ohms ohms ohms
1 2k U
3k
5 360 3.56 k 400
10 160 111 200
20
62 300 100
30
28 157 66
Y'n-V...,_IV V._O.SY
I
Rel-Rez
~
~
~ ~
~
~
~
~
~
~ ~
ohms ohms volts volts ohms oIvns ohms ohms ohms volts volts
3k
10k
10
16
lk
6k
l.211 1.2k 24.
24
32
450
250
ISO
2k
3k
U
10
30
20
47
26 3
16
175
75
25
lk
300
ISO
200
100
25
250
ISO
75
3k
3k
lk
15
30
20
27
17
11
116
1"
30
13
8
17
0
50
111
30
9
I
0.000 I
0.6
11.2
0.2
0.4
0.4
----REVERSE BIAS
FORWARD BIAS---"
VIE, BASE EMITTER VOLTm IVOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-200
V
0.6
2N4404
2N440S
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
80
Vde
Collector-Base Voltage
VCBO
80
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
1.0
Ade
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
1.25
7.15
Watts
mWfC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
8.75
50
Watts
mWfC
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Characteristic
Thermal Resistance, Junction to Case
R9JC
25
°C/W
Thermal Resistance, Junction to Ambient
R9JA
140
°C/W
..
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
=
(VCB
=
(VBE
(lC
(IE
=
(lC
=
=
10 mAde, IB
10 !LAde, IE
10 !LAde, IC
60 Vde, IE
3.0 Vde, IC
=
=
=
0)
0)
0)
= 0)
= 0)
VJBR)CEO
80
V(BR)CBO
80
V(BRIEBO
5.0
ICBO
-
lEBO
-
-
Vde
Vde
Vde
25
nAde
-
25
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE
hFE
=
5.0 Vde)
2N4404
2N4405
30
75
-
=
5.0 Vde)
2N4404
2N4405
40
100
-
(lC
=
10 mAde, VCE
(lC
=
150 mAde, VCE
=
5.0 Vde)(1)
2N4404
2N4405
40
100
120
300
(lc
=
500 mAde, VCE
=
5.0 Vde)(1)
2N4404
2N4405
30
50
-
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
(lc = 150 mAde, IB = 15 mAde)(1)
(lC = 500 mAde, IB = 50 mAde)(1)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 500 mAde, IB = 50 mAde)(1)
VBE(sat)
Base-Emitter On Voltage
(lC = 150 mAde, VCE = 1.0 Vde)
VBE(on)
-
-
-
Vde
0.15
0.2
0.5
Vde
0.85
0.8
1.2
-
0.9
Vde
tr
200
600
MHz
Ceb
-
10
pF
Ceb
-
75
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
=
1.0 MHz)
Emitter-Base Capacitance
(VBE = 0.5 Vde, IC = 0, f
=
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-201
.~.
2N4404,2N4405
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25·C unless otherwise
noted.)
I
Characteristic
Symbol
Min
Max
Unh
15
n.
SWITCHING CHARACTERISTICS
Delay Time
RiseTime
Storage Time
Fall Time
(VCC' = 30 Vde, VBE(off) = 2.0 Vde,
IC = 500 mAde, IBI = 50 mAde)
Id
(VCC = 30 Vde, IC = 500 mAde,
IBI = IB2 = 50 mAde)
t.
tf
-
t,
25
ns
-
175
ns
-
35
n.
i-
(I). Pulse Test: Pulse Width .. 300 /LS, Duty Cycle .. 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 2 - TURN-OFF
FIGURE 1 - TURN-ON
-30V
+Z.O~lf
•
-10.S5V
59 !!
RC
SCOPE
U
ZOO"
ill
a
I
I
I
I
I
I
'3>1.0.S
DUTY CYCLE = Z.O%
I-t
--
I1.ZV
200
~~13~
PULSE WIDTH =ZOO ns
RISE TIME < Z.O ns
DUTY CYCLE~Z.O%
lZ
-30 V
Z 6.0
on
~
4.0
~
3.0
z
2.0
2.0
1.0
1.0
~
0
4.0
~.
3.0
z
100~A ;'\
i~
'" 5.0
u:
w
AS = Optimum Source ReSIstance
0.2 0.3 0.5
1.0
f. FREQUENCY (kHzl
2.0 3.0
5.0
50
10
,..
I--'
f = 1.0 kHz
IC=1.0mA
Ii I
0.1
J
r-...
\
o
0.020.03 0.05
V
r-. V
~.
0.01
1/
t" II
7.0
~
I III III
/
/
jolJ~
B.O
10 ~A. RS = 7.0 k ohms
~
~
IIII
i~
9.0
IC - 1.0 mA•.fl S - 100
SOURCE RESISTANCE EFFECTS
I
I I
100
200300 500 1.0k
2.0k 3.0k 5.0k 10k
RS' SOURCE RESISTANCE (ohmsl
20k 30k SOk
h PARAMETERS
VeE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship of the "h" parameters for this series of transistors. To obtain these
curves, 4 units were selected and identified by number - the same Units were used to develop curves on each graph.
FIGURE 11 300
-
'"
-IUNIL
~
100
~
70
G
50
~
i
FIGURE 12 30
I
I
200
z
CURRENT GAIN
1---
-
30
-
3
:::::
~
w
30
~
~
~
20
05
20
3.0
1.0
IC. COLLECTOR CURRENT (mAl
5.0
t'-....
~
~
2.0
........
r-..
1.0
02
0.3
1.0
2.0
3.0
0.5
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-203
~~
0.7
0.5
0.3
0.1
10
~
50 =UNITl
~
1
V
03
~
~:J".
~""
z
r-
0.2
10
u
E
15
0.1
......
=; 7.0
2
~
~ K,1
20
0
~I-"
INPUT IMPEDANCE
5.0
10
2N4404,2N4405
FIGURE 13 -
t
2
FIGURE 14 -
VOLTAGE FEEDBACK RATIO
100
70
50
'">=
E
30
.3
~ 20
'-'
'"'-'
;;'i 10
~
w
'"
«
w
z
~~
'"
j
f-
.........
•
5.0
'"
j
3.0
r-0.2
0.3
0.5
1.0
2.0
30
IC, COLLECTOR CURRENT (mAl
5.0
~ I::/'
lO
it
':;
UNIT 1
1.0
0.1
20
«
'" 7.0
7.0
5.0
2.0
ill"'!
30
«
,.
ff-
'=' 3.0 ........
>
OUTPUT ADMITTANCE
100
70
1; 50
2.0
""
1-4
-_
I--- iJ;;
.....
1.0
0.1
10
V
0.2
2_ f-
Unit 1
./
I I
0.3
0.5
1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAl
5.0
10
STATIC CHARACTERISTICS
FIGURE 15 -
ffi
!:l
<[
10
7.0
5.0
2.0
z
1.0
0.7
o.S
0:
;;:
'"
f-
~
0:
0.3
'"
0.2
~
VCE 10V
---
~
~
a
u
VCE-1.0V
TJ = m'e
3.0
'"
'"
~
DC CURRENT GAIN
-
"\
----'-
f-.
f- -~
==-.:::
2S'C_ f-
~
SS'C
,~
0.1
1.0
20
3.0
S.O
7.0
SO
70
20
3D
l C' COLLECTOR CURRENT (mAl
10
200
100
300
SOD
700
T
I
TJ = 2S'C
1000
FIGURE 16 -'- COLLECTOR SATURATION REGION
_
1.0
II
~
'"
:!
w
'"~
'"
;;
0.8
II I
III
III
II I
lC= 1.0mA
SOOmA
100mA
10mA
\
0.6
'\..
\
~
:E
~
0.4
'"
g. .
u
'"
0.2
f'.-.
W
>u
"- .....r-,
i""'-- r-..
I'--
0
0.005 0.0D7 0.01
0.02
0.03
O.OS 0.07
0.1
0.2
"-
"'1--1-
lt-0.3
O.S
0.7
1.0
2.0
3.0
5.0
7.0
IB: BASE CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-204
10
20
3D
50
2N4404,2N4405
FIGURE 17 1.0
-
0;
:;
co
~
...
I I II
I I
i:::
111]11
".
=10
VBE(satl@ lellB
BVC for VCEI ..tI
'-'
c:::
0.6
~-1.0
1.0V-
VSE(on)@VCE
....
w
'"
:;
TEMPERATURE COEFFICIENTS
+1.0
i.I
I IIII
I IIII
0.8
FIGURE 18 -
"ON" VOLTAGES
~
U
~-2.0
0.4
>
~
0.2
1.0
1III
2.0 3.0 5.0
-3.0
....... 1--'
VCE(sot)@IC/I B ' 10
o
1.uJ..-tf
10
20 30
50
BVB for VBE
S
100
200 300 500
-4.0
1000
1.0
2.0 3.0
5.0
IC' COLLECTOR CURRENT (mA)
10
20 30
50
100
RATINGS AND THERMAL DATA
FIGURE 19 -
SAFE OPERATING AREA
3.0
--
2.0
;;:
'"'
~
1.0
-)-,
-
...
The safe operating area curves indicate le,VeE
limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.
'\. '\.
....
~
'"'-'=>
'"0
~
S
0.1 ms
0.5
dC~
0.3
0.2
0.1
So 0.07
----
---
0.05
0.03
1.0
vided TJlpk )
"'
3.0
5.0 7.0
10
The data of Figure 19 is based upon TJ(pk) =
200 ·C; TC is variable depending upon conditions.
Pulse curves are valid for duty cycles to 10% pro-
1.0ms
TJ 200·C
SECONDARY BREAKOOWN LlMITEO
BONOING WIRE LlMITEO
THERMALLY LlMITEO
TC = 2S·C (SINGLE PULSE)
CURVES APPLY BELOW
RATEO VCEO
2.0
200 300 500
1000
IC. COLLECTOR CURRENT ImA)
20
"\
~
200·C. TJ(pk) may be calculated
from the data in Figure 20. At high case temperatures, thermal limitations will reduce the power that
can be handled to values less than the lim itations im-
1\
posed by second breakdown.
30
50
70
100
VeE' COLLECTOR-EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-205
•
2N4406
2N4407
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
80
Vde
Collector-Base Voltage
VCBO
80
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
2.0
Amps
Po
1.25
7.15
mWrC
8.75
50
mWrC
TJ, Tstg
-65 to +200
·C
Symbol
Max
Unit
'Collector Current -
Continuous'
Total Device Dissipation @ TA
Derate above 25·C
= 25·C'
Total Device Dissipation @ TC
Derate above 25·C
=
25·C'
Po
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Watts
Watts
THERMAL CHARACTERISTICS
•
Characteristic
Thermal Resistance, Junction to Case
R8JC
20
·CIW
Thermal Resistance, Junction to Ambient
R8JA
140
·CIW
ELECTRICAL CHARACTERISTICS (TA
GENERAL PURPOSE
TRANSISTORS
PNP SILICON
= 25·C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VBE
(lC
(IE
=
=
(lC
=
10 mAde, IB
10 ",Ade, IC
60 Vde, IE
= 3.0 Vde,
=
= 0)
= 0)
= 0)
10 ",Ade, IE
IC
= 0)
= 0)
V(BR)CEO
80
V(BIDJ:BO
80
V(BR)EBO
5.0
ICBO
lEBO
-
-
Vde
Vde
Vde
25
nAde
25
nAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE
hFE
= 5.0 Vde)
2N4406
2N4407
30
80
-
(lC
=
= 5.0 Vde)
2N4406
2N4407
30
80
(lC
= 500 mAde, VCE = 5.0 Vde)
2N4406
2N4407
30
80
120
240
(lC
=
1.0 Ade, VCE
= 5.0 Vdc)
2N4406
2N4407
20
30
-
(lc
=
1.5 Adc, VCE
= 5.0 Vde)
2N4406, 2N4407
10
-
150 mAde, VCE
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
(lC = 1.5 Ade, IB = 150 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 1.0 Ade, IB = 100 mAde)
(lC = 1.5 Adc, IB = 150 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 500 mAde, VCE = 1.0 Vde)
VBE(on)
-
-
Vde
-
-
-
0.2
0.4
0.7
1.5
Vde
0.9
-
0.9
1.3
1.5
-
1.0
Vde
150
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
(VCB
(VBE
=
(lC
=
= 0.5 Vde,
= 20 Vde, f =
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
50 mAde, VCE
10 Vde, IE
IC
100 MHz)
tr
750
MHz
Ceb
-
15
pF
Ceb
-
160
pF
(1) Pulse Test: Pulse Width ,s;; 300 /LS, Duty Cycle.;;;;; 2.0%.
*Indicates Data in addition to JEDEC Requirements.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-206
2N4406,2N4407
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
Characteristics
Symbol
1
Min
Max
Unit
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ts
-
175
ns
tf
-
50
ns
(VCC = 30 Vdc. VSE(off) = 2.0 Vdc.
IC ~ 1.0 Adc. lSI ~ 100 mAdc)
td
(VCC = 30 Vdc. IC ~ 1.0 Adc.
lSI ~ IS2 ~ 100 mAdc)
tr
15
ns
60
ns
(1) Pulse Test: Pulse Width.;; 300 ~s, Duty Cycle :s; 2.0%.
*Indicates Data in addition to JEDEC Requirements.
STATIC CHARACTERISTICS
FIGURE 1 2.5
2.0
z
<
§'"
a
r-
~-
~
1--- ~
1.0 ~
55 C
'"~z 0.5 F-'""
0
0.3
0.25
1.0
--
Nt\:
I
1\
1\
~ 0.6
\
o
B
r-..
\
1\
::::: 0.2
8
VCE' 10 V
~
II
I
>
200300 5001001000
0.1
"ON" VOLTAGES
0.2
0.5
O.S f--+-H-'1.w.11..w.1.w.
1111-L..l1--++-4-+++l-tJ...4:.-±,11.j-1'....Hi"+++·++H1
VSE(satl' ICIIS' lU
V
1.0
II I I II
~ 0.6 t:1:t~;f~!f~:E1jtc~tt~v~S~El(o:ntl@~v~CE~-~I~.o~vjj
0.4 I-+-H+-+-+++ttt-H-t-lH+f-Htt---+++++++m
0.2 1-t-11-+t-1I-+Ht+t--+--I--l--+-+-'..w........--j--+-H.o+++t+H
VCE (satl @ICIIB' 10
-2.0
lIT!
20
50
100
200
FIGURE 5 2.0
f-- - f -
0:
...'"
~
'\.
'\.
tOms'\.
0.2
8
O. 1
-
~ 0.01
0.05
0.03
1.0
'\.
I- TJ = 200"C
-----
II IIII
2.0
5.0
10
20
50
100
IC. COLLECTOR CURRENT(mAI
200
500 1000
The safe operating area curves indicate IC-VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 5 is based upon TJ(pk) ~ 200°C; TC is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) '" 200°C. At high case temperatures. thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
'\. 0.1 msOC
~ 0.7
_ 0.5
~
0IV~ :olrl~~E
-1
1'1. .. "\
i3
'"
o 0.3
TEMPERATURE COEFFICIENTS
SAFE OPERATING AREA
.- -
1.0
100
-
..-
-3.0
1.0
500 1000
lC. COLLECTOR CURRENT (rnA)
3.0
50
OVC for VCE (satl
w
10
20
1-1-
~
5.0
1.0
2.0
5.0
10
lB. BASE CURRENT (mAl
FIGURE 4 -
I I111---.-rrrl"'-TTTTl.----r--.-rIr-J,ffirT"l:OlrTn
2.0
..
\
~ 0.4
t-.....
1000 rnA
500 rnA
~
o
2.0
1.0
TJ,25 0 C
100 rnA
'"
«
1.0 """""'TJT"",2T""5
0 C"TT"IT
~
o~
>
COLLECTOR SATURATION REGION
,.:=
2.0 3.0 5.010 10
20 30 50 10100
IC. COLLECTOR CURRENT (mAl
FIGURE 3 -
I I
Ic'10mA
;:;- 0.8
I....
VCE'1.0V
~
~
>
o
. . . r-
--- -
~ 0.1
«
~
--
r-
s
c;; 1.0
-
TJ'1750 C
FIGURE 2 -
DC CURRENT GAIN
DC
SECONDARY BREAKOOWN LIMITED
8OND1NGW1RE LIMITED·
THERMALLY LIMITED @
TC = 25'& (SINGLE PULSE)
,
'\.
I'\.
~
CURVES APPL Y BELOW
RATED VCEO
20
30
50
5.0 1.0 10
2.0 3.0
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
10 100
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-207
2N4406,2N4407
TRANSIENT CHARACTERISTICS
25'C
100'C
FIGURE 7 - CHARGE DATA
FIGURE 6 - CAPACITANCES
100
500
50 ~
~
f20
200
.....
~100
Cob
z
'-'
g 2.0
I-
~
QT
5.0
~
« 50
t::
30V
f- lCIlB = 10
10
~
w
w
'-'
EJ=V CC -
d
'-' 20
1.0
Ccb
.,...
0.5
QA
10
0.2
•
5.0
0.1
0.1
0.2
0.5
1.0
2.0
5.0
10
20
REVERSE VOLTAGE (VOLTSI
50
1.0
100
5.0
10
20
50
100
lC. COLLECTOR CURRENT (mAl
2.0
1000
700
ICIlB = 10
500
300
-
f--- -I,=ts liB I,
300
200
Id@VBE(offl - 2.0 V
-...-:
~
,,~
~ 100
~
1,@VCC=30V
........
'd @VBE (olft = 0
10
10
20
r--...
-...,
....
100
i=
-" 70 ~I'
50
f - - l-- VCC = 30 V
30
f - - l-- IC/IB" 10
20
.......
1'0.
20
200
!il!
i= 70
03
50
30
........
50
100
200
IC. COLLECTOR CURRENT (mAl
500 1000
FIGURE 9 - TURN-OFF TIME
FIGURE 8 - TURN-ON TIME
1000
700
500
200
I I I
10
500
10
1000
-l-
20
30
50 70 100
200 300
IC. COLLECTOR CURRENT (mAl
500 700 1000
SWITCHING TIME EQUIVALENT TEST CIRCUITS
FIGURE 11 - TURN-OFF TIME
FIGURE 10 - TURN-ON TIME
-30 V
+2
. 0-V
r
-- l
-OV
-30V
SCOPE
loon
-11.1 V
PU LSE WI DTH = 200 ns
RISE TIME ~ 2.0 ns
DUTY CYCLE ~ 2.0%
-11.IV
I
~
I
f
11
f-,
I
I
I
10< 11 < 500~s
12< 10 lIS
13> 1.0~s
OUTY CYCLE"; 2.0%
I
I
13
I--
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-208
SCOPE
100 n
lN916
:
12~
30 n
+4.0 V
2N4453
For Specifications, See 2N869A Data.
2N4854
2N4855
2N4854 - JAN, JTX, JTXV
AVAILABLE
CASE 654-07, STYLE 5
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector 1 to Collector 2 Voltage
Voltage Rating any Lead to Case
VC1C2
±200
±200
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Collector Current -
Continuous
One Oie
Both Die
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Po
300
2.0
600
4.0
mW
mW/"C
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
Po
1.0
6.67
2.0
13.33
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
C:2S::
or
B."'~B"e
Emitter 3
5 Emitter
COMPLEMENTARY DUAL
AMPLIFIER TRANSISTORS
NPN/PNP SILICON
'c
Refer to MD6001 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
60
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 50 Vde, IE = 0, TA = 150'C)
ICBO
-
10
pAde
Emitter Cutoff Current
(VEB = 3.0 Vde, IC = 0)
lEBO
-
10
nAde
2N4854
2N4855
35
20
-
(lC = 1.0 mAde, VCE = 10 Vde)
2N4854
2N4B55
50
25
-
(lc = 10 mAde, VCE = 10 Vde)(1)
2N4B54
2N4855
75
35
-
(lC = 150 mAde, VCE = 10 Vde)(1)
2N4B54
2N4855
100
40
300
120
(lC = 150 mAde, VCE = 1.0 Vde)(1J
2N4854
2N4855
50
20
-
(lC = 300 mAde, VCE = 10 Vde)(1)
2N4B54
2N4B55
35
20
-
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
hFE
-
Collector-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.4
Vde
Base-Emitter Saturation Voltage(1)
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
0.75
1.2
Vde
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 10 Vde, f = 100 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-209
•
2N4854,2N4855
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Collector-Base Capacitance
(VCB = 10 Vde, IE = 0, f
Input Impedance
(lC = 1.0 mAde, VCE
=
Symbol
Min
Max
Unit
Ccb
-
8.0
pF
1.5
0.75
9.0
4.5
60
30
300
150
1.0 MHz)
kohms
hie
=
10 Vde, f
=
1.0 kHz)
2N4854
2N4855
Small-Signal Current Gain
(lC = 1.0 mAde, VCE = 10 Vde, f
=
1.0 kHz)
2N4854
2N4855
Output Admittance
(lC = 1.0 mAde, VCE
=
10 Vde, f
=
1.0 kHz)
2N4854
2N4855
Noise Figure
(lC = 100 !LAde, VCE
=
10 Vde, RS
hfe
hoe
NF
=
1.0 kohm, f
=
1.0 kHz)
/Lmhos
-
8.0
dB
-
20
ns
40
ns
280
ns
70
ns
50
25
SWITCHING CHARACTERISTICS
Delay Time
•
Rise Time
Storage Time
Fall Time
(VCC = 30 Vde, VBE(off) = 0.5 Vde,
It = 150 mAde, IB1 = 15 mAde)
td
(VCC = 30 Vde, IC = 150 mAde,
IB1 = 182 = 15 mAde)
ts
tr
tf
-
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cyele '" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-210
2N4890
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
1.0
Ade
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
5.7
Watt
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
Refer to 2N4033 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
V(BR)CEO
40
-
-
Vde
V(BR)CER
50
-
Vde
= 0)
V(BFUC:BO
60
-
-
0)
V(BR)EBO
5.0
1.5 Vde)
ICEX
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
(VCE
(lC
(IE
=
=
=
=
100 ILAde, IB
10 mAde, RBE
100 ILAde, IE
100 ILAde, IC
= 60 Vde,
= 60 Vde,
(VCE
(lC
(lC
VBE(off)
VBE(off)
=
=
=
= 0)
= 10 ohms)
1.5 Vde)
IBL
-
-
Vde
-
0.25
ILAde
-
0.25
ILAde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 150 mAde, VCE = 2.5 Vde)
(lC = 150 mAde, VCE = 10 Vde)
"(lC = 500 mA, VCE = 5 Vde(l)
hFE
Collector-Emitter Saturation Voltage
(lC = 150 mAde,lB = 15 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VBE(sat)
Base-Emitter On Voltage
(lc = 150 mAde, VCE = 2.5 Vde)
VBE(on)
-
fr
100
25
50
15
130
140
-
250
-
-
0.12
1.4
Vde
0.82
1.7
Vde
0.74
1.7
Vde
280
-
MHz
9.0
15
pF
60
80
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
Cibo
-
(VCC = 30 Vde, VBE(off) = 0.8 Vde,
IC = 150 mAde, IBl = 15 mAde)
td
-
15
50
ns
tr
20
20
50
ns
(VCC = 30 Vde, IC = 150 mAde,
IB1 = IB2 = 15 mAde)
ts
-
110
200
ns
tf
-
20
70
ns
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
140 kHz)
Cobo
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) Pulse Test: Pulse Width
=
300 1-'5, Duty Cycle"" 2.0%.
"Indicates Data in Addition to JEDEC Requirements.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-211
•
2N4926
2N4927
MAXIMUM RATINGS
Symbol
2N4926
2N4927
Unit
Collector-Emitter Voltage
Rating
VCEO
200
250
Vde
Collector-Base Voltage
VCBO
200
250
Vde
Emitter-Base Voltage
VEBO
7.0
Vde
IC
50
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
25°C
Po
1.0
5.71
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
~()'''~'
"
2
1
, Emitter
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
•
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
R9JC
35
°CIW
Thermal Resistance, Junction to Ambient
R9JA
175
°CIW
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise
NPN SILICON
Unit
noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 0.1 mAde, IC = 0)
200
250
2N4926
2N4927
200
250
V(BR)EBO
ICBO
2N4926
0)
0, TA = 100°C)
0)
0, TA = 100°C)
Emitter Cutoff Current
(VBE = 5.0 Vde)
7.0
lEBO
-
Vde
/lAde
-
-
0.1
10
0.1
10
-
0.1
-
2N4927
-
Vde
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde, IC = 0)
Collector Cutoff Cu rrent
NCB = 100 Vde, IE =
(VCB = 100 Vde, IE =
(VCB = 150 Vde, IE =
(VCB = 150 Vde, IE =
Vde
V(BR)CEO
2N4926
2N4927
/lAde
ON CHARACTERISTICS (1)
DC Current Gain
(lc
(lC
(lC
(lC
=
=
=
=
3.0 mAde, VCE =
10 mAde, VCE =
30 mAde, VCE =
50 mAde, VCE =
10 Vde)
10 Vde)
10 Vde)
20 Vde)
hFE
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
(lC = 30 mAde, IB = 3.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 3.0 mAde)
VBE(sat)
Base-Emitter On Voltage
(lC = 30 mAde, VCE = 10 Vde)
VBE(on)
10
15
20
20
-
-
-
200
1.0
2.0
Vde
1.2
1.5
Vde
1.5
Vde
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product (lC = 10 mAde, VCE = 20 Vde, I = 20 MHz)
Collector-Base Capacitance
Input Impedance
(VCB = 20 Vde, IE = 0, I = 140 kHz)
(lC = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Voltage Feedback Ratio
(lC = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
Small-Signal Current Gain
Output Admittance
(lC = 10 mAde, VCE = 10 Vde, 1= 1.0 kHz)
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Real Part 01 Input Impedance
(lC = 10 mAde, VCE = 20 Vde, I = 5.0 MHz)
IT
30
300
Ceb
-
6.0
pF
hie
75
2000
ohm
h re
0.1
2.0
X 10-4
hIe
25
250
-
hoe
-
50
I'mhos
Re(hie)
4.0
200
ohms
(1) Pulse Test: Pulse Width", 300 I's, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-212
2N4928
thru
2N4931
MAXIMUM RATINGS
Rating
Symbol
2N4928
2N4929
Collector-Emitter Voltage
VCEO
100
150
Collector-Base Voltage
VCBO
100
150
Emitter-Base Voltage
VEBO
4.0
4.0
Collector Current Continuous
IC
100
Total Device Dissipation
@TA=25°C
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage
Junction Temperature
Range
TJ, T5 tg
2N4930
2N4931
Unit
200
250
Vde
200
250
Vde
4.0
4.0
Vde
500
500
500
mAde
0.6
3.4
1.0
5.71
1.0
5.71
1.0
5.71
Watt
mWrC
3.0
17.2
5.0
28.6
5.0
28.6
5.0
28.6
Watt
mW/oC
-65 to +200
2N4930 and 2N4931 JAN, JTX &
JTXV AVAILABLE
CASE 79-04, STYLE 1
TO-39 (TO-205ADI
GENERAL PURPOSE
TRANSISTORS
°c
PNPSILICON
Refer to 2N3494 for graphs for 2N4928.·
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 100 /'Ade)
V(BR)CEO
2N4928
2N4929
2N4930
2N4931
100
150
200
250
V(BR)CBO
2N4928
2N4929
2N4930
2N4931
100
150
200
250
-
-
V(BR)EBO
4.0
'CBO
-
0.5
0.5
1.0
-
0.5
1.0
All Types
20
-
(lC = 10 mAde, VCE = 10 Vde)(l)
2N4928, 2N4929
2N4930, 2N4931
25
20
200
200
(lc = 50 mAde, VCE = 10 Vde)(l)
(lc = 30 mAde, VCE = 10 Vde)(l)
2N4928, 2N4929
2N4930, 2N4931
20
20
-
Collector Cutoff Cu rrent
(VCB = 50 Vde, IE = 0)
(VCB = 75 Vde, IE = 0)
(VCB = 150 Vde, IE = 0)
2N4928
2N4929
2N4930, 2N4931
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
(VBE = 3.0 Vde, IC = 0)
2N4928, 2N4929
2N4930, 2N4931
lEBO
Vde
-
Emitter-Base Breakdown Voltage
(IE = 100 /'Ade, IC = 0)
Vde
Vde
/'Ade
/'Ade
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
Collector-Emitter Saturation Voltage(l)
(lc = 10 mAde, IB = 1.0 mAde)
hFE
VCE(sat)
2N4928, 2N4929
2N4930, 2N4931
Base-Emitter On Voltage
(lC = 10 mAde, VCE = 10 Vde)
VBE(on)
Vde
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-213
-
0.5
5.0
1.0
Vde
•
2N4928 thru 2N4931
ELECTRICAL CHARACTERISTICS
(continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
100
20
1,000
200
Unit
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAdc, VCE = 20 Vdc, I = 100 MHz)
(lC = 20 mAdc, VCE = 20 Vdc, I = 20 MHz)
2N4928, 2N4929
2N4930, 2N4931
Collector-Base Capacitance
(VCB = 20 Vdc, IE = 0, I =; 140 kHz)
(VCB = 20 Vdc, IE = 0, I = 140 kHz)
(VCB = 20 Vdc, IE = 0, I = 140 kHz)
2N4928
2N4929
2N4930, 2N4931
Emitter-Base Capacitance
(VBE = 2.0 Vdc, IC = 0, I
(VBE = 1.0 Vdc, IC = 0, I
(VBE = 0.5 Vdc, IC = 0, I
2N4928
2N4929
2N4930, 2N4931
=
=
=
IT
Ccb
Ceb
140 kHz)
140 kHz)
140 kHz)
MHz
pF
-
6.0
10
20
-
40
80
400
pF
-
-
(1) Pulse Test: Pulse Width .. 300 /J13, Duty Cycle .. 2.0%.
Refer to 2N3634 lor graphs lor 2N4929.
ReIer to 2N3743 lor graphs lor 2N4930 and 2N4931.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-214
2N4937
thru
2N4939
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector 1 to Collector 2 Voltage
Voltage Rating and Lead to Case
VC1C2
±200
±200
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IB
10
mAde
IC
50
mAde
Rating
Base Current
Collector Current -
Continuous
Total Device Dissipation
@ TA = 25°C - Ceramic
Metal Can
Derate above 25°C - Ceramic
Metal Can
PD
Total Device Dissipation @ T C = 25°C
Derate above 25°C
Metal Can
PD
Operating and Storage Junction
Temperature Range
Both Die
250
500
1.5
2.9
350
600
2.0
3.4
mW
mWrC
1.2
6.85
2.0
11.42
Watts
mWI"C
-65 to +200
2N4941
CASE 610A-04
~1
STYLE 1
9
DUAL
AMPLIFIER TRANSISTORS
PNP SILICON
Refer to MD3250,A for graphs.
One Die
TJ, T.tg
PIN CONNECTION DIAGRAMS
CASE 610A-04
STYLE 1
CASE 654-07
STYLE 1
.:,~..~~-
°c
Emitter 3
ELECTRICAL CHARACTERISTICS
71~
CASE 654-07
STYLE 1
Emitter 2
5 Emitter
4 Emitter
(TA = 25°C unless otherwise noted.)
Max
Symbol
Min
Collector-Emitter Breakdown Voltage
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 10 IlAdc, IE = 0)
V(BR)CBO
50
-
Emitter-Base Breakdown Voltage
(IE = 10 IlAdc, IC = 0)
V(BR)EBO
5.0
-
Characteristic
Unh
OFF CHARACTERISTICS
Vdc
Vdc
Vdc
Collector Cutoff Current
(VCB = 40 Vde, IE = 0)
ICBO
-
20
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
20
nAdc
40
50
50
200
250
250
300
900
MHz
Ccb
-
5.0
pF
Ceb
-
10
pF
hie
1.0
10
kO
h re
-
10
X 10-4
hie
50
-
hoe
5.0
50
"mhos
NF
-
4.0
dB
ON CHARACTERISTICS
DC Current Gain
(lc = 100 IlAdc, VCE
(lc = 1.0 mAdc, VCE
(lC = 10 mAde, VCE
hFE
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
-
SMALL·SIGNAL CHARACTERISTICS
iT
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 10 Vdc, f = 100 Mhz)
Output Capacitance
(VCB = 10 Vdc, IE
=
=
140 kHz)
Emitter Guarded
Input Impedance
(lBE = 0.5 Vdc, IC
= 0, f =
140 kHz)
Collector Guarded
0, f
Input Impedance
(lc = 1.0 mAdc, VCE
=
10 Vdc, f
=
1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCE
=
10 Vdc, f
=
1.0 kHz)
Small·Signal Current Gain
(lC = 1.0 mAdc, VCE = 10 Vdc, f
=
1.0 kHz)
Output Admittance
(lc = 1.0 mAdc, VCE
=
10 Vdc, I
=
1.0 kHz)
Noise Figure
(lC = 100 IlAdc, VCE
=
10 Vdc, RS
= 3.0 kO, I =
10 Hz to 15.7 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3·215
-
•
2N4937 thru 2N4939 , 2N4941
ELECTRICAL CHARACTERISTICS (TA = 2S"C unless otherwise noted.)
Min
Max
2N4937,2N4941
2N4938
0.9
0.8
1.0
1.0
2N4937, 2N4941
2N4938
0.85
0.7
1.0
1.0
Characteristic
Svmbol
Unit
MATCHING CHARACTERISTICS
DC Current Gain Ratio(l)
(lC = 100 !lAde to 1.0 mAde, VCE = 10 Vde)
(lC = 100 !lAde to 1.0 mAde, VCE = 10 Vde,
TA = -SS"C to 12S"C)
Base-Emitter Voltage Differential
(lC = 100 !lAde to 1.0 mAde, VCE = 10 Vde)
Base-Emitter Voltage Differential Gradient
(lC = 100 !lAde to 1.0 mAde, VCE = 10 Vde,
TA = 2S"C to + 12S"C)
•
(lC = 100 !lAde to 1.0 mAde, VCE = 10 Vde,
TA = - SS"C to 2S"C)
hFE1/hFE2
IVBE1-VBE21
2N4937,2N4941
2N4938
mVde
-
-
3.0
5.0
mVde
<1(VBE1-VBE2)
2N4937, 2N4941
2N4938
<1TA
2N4937,2N4941
2N4938
(1) The lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-216
-
-
1.0
2.0
0.8
1.6
MAXIMUM RATINGS
Rating
Symbol
2N5022
2N5023
Unit
VCEO
50
30
V
Collector-Emitter Voltage
VCES
50
30
V
Collector-Base Voltage
VCBO
50
30
V
Emitter-Base Voltage
VEBO
5
V
1.0*
A
= 1%)
= 25°C
IC
PD
1.0
5.72
Watts
mWfC
= 25°C
PD
4.0
22.8
Watts
mW/oC
TJ, Tstg
-65 to +200
°c
TL
+300
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RWC
43.8
°C/W
Thermal Resistance, Junction to Ambient
RWA
175
°C/W
Collector-Emitter Voltage
Collector Current -
(Pulse Width
Continuous
= 300 1"',
DC
Total Device Dissipation @ TA
Derate above 25°C
Total Device Dissipation @ T C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Maximum Lead Temperature
(Soldering, 60 sec max)
2NS022
2NS023
CASE 79-04, STYLE 1
TO-39 (TO-205ADI
2
THERMAL CHARACTERISTICS
Characteristic
";~'''""'
"
1 Emitter
GENERAL PURPOSE
TRANSISTORS
PNP SILICON
*Indieates Data in Addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS (TA
1
Refer to 2N3467 for graphs.
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 100 !lAde)
V(BR)CES
2N5022
2N5023
Collector-Emitter Sustaining Voltage
(lC = 10 mAde)
50
30
V(BR)CEO(sus)*
2N5022
2N5023
Collector-Base Breakdown Voltage
(lc = 100 !lAde)
50
30
Emitter-Base Breakdown Voltage
(IE = 100 i
~
40
30
r--.::.
~~ t10
-10
oX
w
-20
r-
O.J:-r-
.§.
w
'"<':;
-30
>
'"
0
-I-
VI/"
-0.1
5.0
-5.0
-10
ii
w
OmA
-2.0 rnA
-5.0
-10
-20
-75
w
1000
-50
+0.1
U
Z
<-
~_
50 1750C
ffi ~
"'0::
1.=100jiA
• = 1.0 kHz
z - -0.2
,0 ....
z
",w -0.3
OU
t;~
w'"
.... w
~
20
.... 0
OU
.....
10
~~
TJ = 175 0C
250C1i'fji
1.0
0.01
55 0C;4t
0.02
0.5
1.0
0.1
0.2
IS. SASE CURRENT (rnA)
0.05
2.0
5.0
/
-0.6
"'w
w",
...:'"
eZw....
-0.7
-0.9
c
a
'j
VCE 1.0 V
TJ = 1750C
'"....z
:::
'"=>
'"
8
I"""
;;:
~
_5~O~
100
~
0.1
0.2
0.5
1.0
is. SASE CURRENT (rnA)
50
-
~z
50
;;:
40
'"
....
30
'"'"=>
20
U
U
20
:>
0.1
0.2
0.5
1.0
2.0
5.0
10
Ic. COLLECTOR CURRENT (rnA)
5.0
10
, ,
VEC = 0.5 V
T}= 1750C
r-..
250 C
........
........
0
10
0.05
2.0
,,
60
~
~
U
0
0.05
70
~
~
200
0.02
FIGURE 6 - CURRENT GAIN (Inverted Connection)
versus EMITTER CURRENT
1000
500
I. = l00jiA
• = 1.0 kHz
-0.8
0.01
10
/
I
I
-0.5
FIGURE 5 - CURRENT GAIN versus
COLLECTOR CURRENT
z
175
TJ = 25 C TO -550C
-0.4
w=>
!::~
5.0
2.0
-0.1
'0
!!!Ii
-
150
'21l0 Jill
~e..
250C
25
50
75
100 125
TJ. JUNCTION TEMPERATURE (DC)
TJ=25 0C TO 175 0C"
.... u
0
200 t\,.TJ = -55 C
-25
r--
FIGURE 4 - EMITTER-COLLECTOR "ON" RESISTANCE
TEMPERATURE COEFFICIENT versus BASE CURRENT
FIGURE 3 - EMITTER-COLLECTOR "ON" RESISTANCE
versus BASE CURRENT
100
-
~ -15
-2.0
-1.0
-0.5
IS. SASE CURRENT (rnA)
-0.2
-
IE L2.olA
10
w
....
....
>
/I
Is=I.OmA
15
~
8
oX
/1'-2.0 rnA
-50
20
0
-O.5~ .....
V-LOrnA
~ -40
>
-
w..5m
~
8
~
~
~ IE~+~.O~A
20
;;
Tj=U
20
50
;==
10
0
0.05
--5rDC
0.1
0.2
r--
0.5
1.0
2.0
5.0
IE. EMITIER CURRENT (mA)
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
3-221
r....
10
20
50
•
2N5230
FIGURE 7 - COLLECTOR CUTOFF CURRENT_.
JUNCTION TEMPERATURE
FIGURE 8 - EMITTER CUTOFF CURRENT venus
JUNCTION TEMPERATURE
1000
~
1000
""'-
100
=>
U
10
U.
U.
o
~
f - - -VCS=50V
1.0
0:
,
o
tj
0.1
l
100
ffi
0:
g;
10
I-
0:
0:
.- .,.,
u
u.
u.
0
I-
~
.,.,
0:
W
VCS = 15 V
I:
0.1
';
0.01
~ 0.0 1
!l
0.00 1
0.001
o
•
.,.,
20
40
60
BO
100 120 140 160
TJ.JUNCTION TEMPERATURE (OC)
lBO
200
o
0.20
10
O.IB
0: . .
wI-
0.16
-> 0.14
:E-
-55 0 C,
.... > 0.10
5~
u_ O.OB
,
/~
~~
.!~ 0.06
~I>;1j 0.04
u.
I
IclIs = 10
wo
.s
w
u
JI.
~
;!
0.2
0.5
1.0
2.0
5.0
10
IC. COLLECTOR CURRENT (rnA)
60
BO
100 120 140
160
TJ. JUNCTION TEMPERATURE IOC)
U
~
--
I'-..
200
50
Cob venus VCS
'i'..
r--....
4.0
I"
~
I
o
0.1
I
0.2
0.5
1.0
2.0
5.0
10
REVERSE SIAS (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-222
1'0...
Cib versus VEB
2.0
20
1BO
TJ = 25 0 C
r--...
«
u
25 0 C
""::;;;; ..
0.1
40
r-...
6.0
z
V
0.02
0
0.05
B.O
TJ = 1750 C
~~ 0.12
:=~
u ....
20
FIGURE 10 - JUNCTION CAPACITANCE versus
REVERSE BIAS VOLTAGE
FIGURE 9 - COLLECTOR-EMITTER SATURATION
VOLTAGE vorsusCOLLECTOR CURRENT
1- ....
1-0
VEB=15V
".,
.-
:E
w
o
.,., .,.,
VES = 50 V
1.0
20
50
100
2N5320
2N5321
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
2N5320
2N5321
Collector-Emitter Voltage
VCEO
75
50
Vde
Collector-Base Voltage
VCBO
100
75
Vde
Emitter-Base Voltage
VEBO
7.0
Rating
Base Current
Collector Current -
Continuous
Total Device Dissipation @ TC
Derate above 25"C
Vde
5.0
IB
1.0
Ade
IC
2.0
Ade
Po
10
0.057
Watts
mWfC
TJ, Tstg
-65 to +200
"C
= 25"C
Operating and Storage Junction
Temperature Range
Unit
,!/! ~()'"~
2
1
1 Emitter
SWITCHING TRANSISTORS
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 100 mAde, IB = 0)
Collector Cutoff Current
(VCE = 100 Vde, VBE = 1.5 Vde)
(VCE = 70 Vde, VBE = 1.5 Vde, TC = 150"C)
(VCE = 75 Vde, VBE = 1.5 Vde)
(VCE = 45 Vde, VBE = 1.5 Vde, TC = 150"C)
Emitter Cutoff Current
(VBE = 7.0 Vde, IC = 0)
(VBE = 5.0 Vde, IC = 0)
V(BR)CEO
2N5320
2N5321
75
50
ICEX
2N5320
-
lEBO
2N5320
2N5321
Vde
mAde
-
-
2N5321
-
-
0.1
5.0
0.1
5.0
mAde
0.1
0.1
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 500 mAde, VCE = 4.0 Vde)
(lc = 1.0 Ade, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
Base-Emitter On Voltage
(lC = 500 mAde, VCE = 4.0 Vde)
-
hFE
2N5320
2N5321
2N5320
VCE(sat)
2N5320
2N5321
30
40
130
250
10
-
-
0.5
0.8
Vde
VBE(on)
2N5320
2N5321
Vde
-
1.1
1.4
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(IC = 50 mAde, VCE = 4.0 Vde, f = 10 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC = 500 mAde, IB1 = 50 mAde)
ton
-
80
ns
Turn-Off Time
(VCC = 30 Vde, IC = 500 mAde, IB1 = IB2 = 50 mAde)
toff
-
800
ns
(1) Pulse Test: Pulse Width", 300 /J.S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-223
•
2N5320, 2N5321
FIGURE 1 -
FIGURE 2 -
TYPICAL INPUT CHARACTERISTICS
TYPICAL TRANSFER CHARACTERISTICS
COLLECTOR·TO·EMITTER VOLTAGE (VCEI =4.0 V
!
~
!....
SO
~
II
.
=>
u
:: 6.0
t;""
AMBIENT TEMPERATURE
(TA) =25°C
~~ 4.0
1200
1000
~
0
J
l
2.0
•
u
~
II
FIGURE 3 -
I
SOO
IIAMBIENT TEMPERATURE
600
I
400
0
CURRENT GAIN CHARACTERISTICS versus
COLLECTOR-EMITTER VOLTAGE
(TA)
0.5
0.6
FIGURE 4 -
0.7
O.S
0.9
VSE. BASE·TO·EMITTER VOLTAGE (V)
MAXIMUM SAFE OPERATING AREAS (SOA)
10
I- Ie MAX.
(CONTINUOUS)
r--
CASE TEMPERATURE (TC) =25°C
(CURVES MUST BE DERATED UN EARLY
WITH INCREASE OF TEMPERATURE)
PULSE OPERATION"
~
VCE = -4.0 V
AMBIENT TEMPERATURE
(TA) = 25°C
0
=25°C
/
200
0.6 0.7 O.S 0.9 1.0 1.1
VsE. BASE TO EMITTER VOLTAGE (V)
'"
"FOR SINGLE
NONREPETITIVE PULSE
II
0
=4.0 V
COLLECTOR·TO EMITTER VOLTAGE (VCE)
10
0.1
1.0
10
Ie. COLLECTOR CURRENT (mA)
100
1.0
1000
VCEO MAX =50 V
(2N5321)
0.2 mS
1.0 mS
5.0 mS
,..DC OPERATION
VCEO MAX =75 V
-(2N5320)
10
100
VCE. COLLECTOR·TO·EMITTER VOLTAGE (V)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-224
I
SOl'S
·O.lMS
2N5322
2N5323
MAXIMUM RATINGS
Rating
Symbol
2N5322
2N5323
Collector-Emitter Voltage
VCEO
75
50
Vde
Collector-Base Voltage
VCBO
100
75
Vde
Emitter-Base Voltage
VEBO
7.0
Collector Current -
=
Ade
IC
2.0
Ade
Po
10
0.057
Watts
TJ, Tstg
-65 to +200
°c
25°C
Operating and Storage Junction
Temperature Range
,f ~.~"~.'
Vde
1.0
Continuous
Total Device Dissipation @ TC
Derate above 25°C
5.0
IB
Base Current
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Unit
wrc
2
1
, Emitter
SWITCHING TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
PNPSIUCON
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
75
50
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 100 mAde, IB = 0)
Collector Cutoff Current
(VCE = 100 Vde, VBE = 1.5 Vde)
(VCE = 70 Vde, VBE = 1.5 Vde, TC = 150°C)
(VCE = 75 Vde, VBE = 1.5 Vde)
(VCE = 45 Vde, VBE = 1.5 Vde, TC = 150°C)
Emitter Cutoff Current
(VBE = 7.0 Vde, IC = 0)
(VBE = 5.0 Vde, IC = 0)
V(BR)CEO
2N5322
2N5323
ICEX
2N5322
2N5323
lEBO
2N5322
2N5323
-
Vde
mAde
0.1
5.0
0.1
5.0
mAde
0.1
0.1
ON CHARACTERISTICS(1)
DC Current Gain
(lC = 500 mAde, VCE = 4.0 Vde)
(lC = 1.0 Ade, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
Base-Emitter On Voltage
(lc = 500 mAde, VCE = 4.0 Vde)
-
hFE
2N5322
2N5323
2N5322
30
40
130
250
10
-
-
0.7
1.2
-
1.1
1.4
Vde
VCE(sat)
2N5322
2N5323
Vde
VSE(on)
2N5322
2N5323
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(lC = 50 mAde, VCE = 4.0 Vde, f = 10 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC = 500 mAde, IBl = 50 mAde)
ton
Turn-Off Time
(VCC = 30 Vde, IC = 500 mAde, IBl = IB2 = 50 mAde)
toff
-
(1) Pulse Test: Pulse Width .. 300 p13, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-225
100
ns
1000
ns
•
2N5322,2N5323
FIGURE 1 -
TYPICAL INPUT CHARACTERISTICS
FIGURE 2 -
TYPICAL TRANSFER CHARACTERISTICS
COLLECTOR-T~ EMIMR VOLTAGE (VcEI
COUECTOR-TO-EMITTER VOLTAGE (VcEI = -4.0 V
-10
I
II
4
oS -8.0
Ia
~S
-8.0
4
oS
ffi
~
=>
'-'
I AMBIENT TEMPERATURE (TAl = 25°C
.
t;
~
V
-800
~MBlENT TEMPERATURE (TAl =25°C
c
I
-2.0
-1200
=
I
-40
'-'
9
I
-400
-0.9
-1.1
-0.7
lisE. BASE TO EMITTER VOLTAGE (VI
•
FIGURE 3 -
CURRENT GAIN CHARACTERISTICS versus
COLLECTOR-EMITTER VOLTAGE
I
I
I
I
-
L
/
-0.7
=4.0 V
FIGURE 4 -
-0.9
-1.1
VBE. BASE-TO-EMITTER VOLTAGE (VI
MAXIMUM SAFE OPERATING AREAS (SOAI
10
,=
ffi
'0
CilS.E TEMPER~T_URE (Tci = 25°C
(CURVES MUST BE DERATED LINEARLY
WITH INCREASE OF TEMPERATUREI
-10
~
IC MAX.
~ -1.0
~
1=
0
9 -0.1
0
--II:!
-10
1.0
IC. COUECTOR CURRENT
- JO
-0.01
-1.0
-1
DC OPERATION
DISSIPATION
LIMITED
(SLOPE - 11
Is/b LIMITED
(SLOPE = -21
VCEO
MAX = -50 V
2N53231 .J!
VCEO
MAX = -75 V
(2N53221
-10
-100
VCE. COUECTOR-TO-EMITTER VOLTAGE
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-226
2N5415, 2N5416 For Specifications, See 2N3439 Data.
2N5581/82 For Specifications, See 2N2218,A Data.
MAXIMUM RATINGS
Symbol
2N5679
2N5681
2N5680
2N5682
Unit
Collector-Emitter Voltage
VCEO
100
120
Vde
Collector-Base Voltage
VCBO
100
Emitter-Base Voltage
VEBO
4.0
Vde
IB
0.5
Ade
IC
1.0
Ade
Rating
Base Current
Collector Current -
Continuous
120
Vde
Total Device Dissipation @ TA
Derate above 25'C
= 25'C
PD
1.0
5.7
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
PD
10
57
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Unit
'CiW
.C!W
Operating and Storage Junction
Temperature Range
2N5679
2N5680
2N5681
2N5682
PNPSILICON
NPN SILICON
,~"~'
Ba5~
Symbol
Thermal Resistance, Junction to Case
R8JC
17.5
Thermal Resistance, Junction to Ambient
R8JA
175
Characteristic
..
"'
e~
1 Emitter
~
1 Emitter
3~![
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
THERMAL CHARACTERISTICS
Max
~~'
GENERAL PURPOSE
TRANSISTORS
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC = 10 mAde, IB = 0)
Collector Cutoff Current
(VCE = 70 Vde, IB = 0)
(VCE = 80 Vde, IB = 0)
ICEO
Collector Cutoff Current
(VCE = 100 Vde, VEB = 1.5 Vde)
(VCE = 120 Vde, VEB = 1.5 Vde)
(VCE = 100 Vde, VEB = 1.5 Vde, TC = 150'C)
(VCE = 120 Vde, VEe = 1.5 Vde, TC = 150'C)
Collector Cutoff Current
(VCB = 100 Vde, IE = 0)
(VCB = 120 Vde, IE = 0)
Vde
VCEO(sus)
2N5679, 2N5681
2N5680, 2N5682
ICEX
2N5679, 2N5681
2N5680, 2N5682
-
-
10
10
-
1.0
1.0
/lAde
-
2N5679, 2N5681
2N5680, 2N5682
ICBO
2N5679, 2N5681
2N5680, 2N5682
Emitter Cutoff Current
(VEB = 4.0 Vde, IC = 0)
100
120
lEBO
-
/lAde
mAde
1.0
1.0
/lAde
-
1.0
1.0
-
1.0
/lAde
ON CHARACTERISTICS
DC Current Gain
(lC = 250 mAde, VCE = 2.0 Vde)
(lC = 1.0 Ade, VCE = 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 250 mAde, IB = 25 mAde)
(lC = 500 mAde, IB = 50 mAde)
(lC = 1.0 Ade, IB = 200 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 250 mAde, VCE = 2.0 Vde)
veE (sat)
40
5.0
150
-
0.6
1.0
2.0
1.0
Vde
IT
30
-
MHz
Cobo
-
50
pF
hfe
40
-
-
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 100 mAde, VCE = 10 Vde, f = 10 MHz)
Output Capacitance
(VCB = 20 Vde, IE = 0, f = 1.0 MHz)
Small-Signal Current Gain
(lC = 0.2 Ade, VCE = 1.5 Vde, f = 1.0 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-227
•
2N5679 thru 2N5682
FIGURE 1 -
SWITCHING TIMES TEST CIRCUIT
Vee
01 Must Be Fast Recoverv Type, e.g.
M805300 Used Above '8 = 100 mA
MS06100 Used Below Ie "" 100 mA
+30
j25~sr-
VI
V2
"::9=J
9.0V
v
RC
Scope
RS
01
51
:s;'10 ns
Duty Cycle'" 1 .0%
t,.tf
-4.0 V
AS and RC Vaned to Obtain Desired Current Levels
For td and t r . 01 IS disconnected and V2 = 0
For PNP test circUit, reverse diode and vOltage polantles.
PNP
NPN
2N5681.2N5682
2N5679.2N5680
FIGURE 2 -
TURN·ON TIME
1.0 k
1.0 k
700
SOO r - ' 10;;;:: t,
300
~.
200
........ ~
..... """(""0.
"
~ 100
i= 70
~.
700
SO0
VCC - 30 V
'Bl=IB2
TJ=2S·C
---lcIlB =S.O
--lcIIB=10
...... r--...,
... r--
0
20
30
SO 70 100
200 300
IC. COLLECTOR CURRENT ImA)
I-1.0 kl'..
700
-
t,
-.. ...........
soo
200
VcC=30V
'Bl=IB2
TJ = 2S·C
20
3.0 k
30
200 300
SO 70 100
IC. COLLECTOR CURRENT ImA)
.......
1.0 k
700
~ 500
!
I'
I-
~.
"
100
70
S0
20
30
-
ts
2.0 kr--
r- tl@ IcllB = S.O
30
10
~-
I
SOD 700 1.0 k
TURN·OFF TIME
tf@ICIlB-l0
~ 300
>=
~.
I
1010
SOO 700 1.0 k
.... r.:::.....
td@VBEI.ff)-O
0
S.O k
I--
2.0 k
:-.....
0
FIGURE 3 -
!
,,~
100
., 70
0
0
1010
tf """
!
SO t--- td @VBEI.tt) = 0
3.0 k
'
200......
....
,
"-
300
!
VCC= 30 V
IB1=IB2
TJ = 2S·C
---ICIIB=S.O
IcllB =10
SO 70 100
200 300
IC. COLLECTOR CURRENT ImA)
30O~~
20
-
tl@ICilB=10
I
tl@ Ir'B S.O
r--
0
0
SID
20
-
30
SO 70 100
200 300
IC. COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-228
I-
r...... -...;...,
o
100
SOD 700 1.0 k
VCC-30V
IB1=IB2
TJ = 2S·C
SOD 700 1.0 k
2N5679 thru 2N5682
FIGURE 4 -
CURRENT-GAIN -
BANDWIDTH PRODUCT
FIGURE 5 700
0
0
VCE~
10V
~
-
SOD
--
'~lOMHz
TJ
2SoC
I-
0
0
0
300
w
~~
~ 100
>-
0=
;t
~
u
\
- - - 2NS679,2NS680
2NS681.2NS682
Cob
i3 70
I'\.
0
0
0
.....
0
o
0
_
- - - 2NS679,2NS680
_ _ 2NS681, 2N5682
20
30
SO
70
100
200
300
7.00.1
SOD 700 1.0 k
--..
II 1111
0
0
TJ~2SoC
C ,b(" f-'"
~200
u
0
CAPACITANCE
0.2
O.S
'C, COLLECTOR CURRENT (mA)
1.0
2.0
S.O
10
20
FIGURE 6 -
THERMAL RESISTANCE
0
7-0~OS
S
ROJCI.) - rl') ROJC
ROJC = 11.5 0 C/W Max
-
3-b.2
2
01
005
I
o CURVES APPLY FOR POWER
.......
PULSE TRAIN SHOWN
READ TIME AT tT
TJlpk) - TC ~ Plpk) ROJCIt)
..-:::: ~ P'"
-..., ;:::::; f'""
1-
IOU
50
VR, REVERSE VOLTAGE (VOLTS)
=
-
~~~
1,,1-=
7
S
==
Pip')
--.L-
001
SINGLE PULSE
3
-'2
2
00 I
02
03
0.5
07
-
DUTY CYCLE, 0 = 11/12
I I I II
10
20
30
5.0
70
10
20
30
50
70
200
100
300
500
700 1000
2000
t. TIME {ms!
FIGURE 7 -
ACTIVE-REGION SAFE OPERATING AREA
FIGURE 8 -
2.0 k
I .0
50mi~\
~ 1.0 k
;:: 700
iii
de
~ 500
0
1::
0
9
~
po..; -LOms
O. 8
'"t;
...... ~
" ~........ :::---....
........ .........
0
~ 3D0
'"
,,100",
I\SOO "'
'\
TC ~ 2SoC
BONOING WIRE LIMIT
- - - THERMAL LIMIT
SECONO BREAKDDWN LIMIT
---
;'t O.6
'\
'"z
~
'\
'"w
~
0
0
2NS679,2NS681
2NS680,2NS682
0
202.0
3.0
5.0
7.0
10
20
30
SO
........,
;::
1\
70
"\
--I
100
POWER DERATING
200
There are two limitations on the power handling ability of a
transistor average Junction temperature and second breakdown.
Safe operating area curves Indicate Ie - VeE limits of the transistor
that must be observed for reliable operation; I.e. the tranSistor must
not be subjected to greater diSsipation than the curves indicate
The data of Figure 7 IS based on T C = 250 C; T J(pk) IS
vanable depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ(pk) ,.;; 20o"C. T Jlpk)
"........,
""- ...........
""
O. 2
0
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS)
THERMA'L'-DERATING
O.4
SECOND
BREAKOOWN I - OERATING
40
80
120
TC, CASE TEMPERATURE 1°C)
...........
~
160
""
200
may be calculated from the data 10 Figure 6. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations Imposed by second
breakdown. Second breakdown limitations do not derate the same
as thermal limitations. Allowable current at the voltages shown
on Figure 7 may be found at any case temperature by using
the appropriate curve on Figure 8.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-229
•
2.N5679 thru 2N5682
PNP
2N5679,2N5680
NPN
2N5681,2N5682
FIGURE 9 -
200
DC CURRENT GAIN
300
I
15~C
vcl.)o V
z
4'
z
;;:
TJ!
~ 100
'"
~
ill
a~
I-
25°C
70
<.>
'"~
~
--
MJ
I-
'"
-II
..-
....- v
70
-55°C
I':\~
--
.....
50
30
50 70 100
200
IC. COLLECTOR CURRENT ImA)
300
500 700 1.0 k
FIGURE 10 1. 0
20
c:ii 1.0
200 rnA
IC = 50 rnA
~
;:; 0.8
\
~
I~
~
Ic·50mA
\ 200 rnA
0,6
500 rnA
1000 rnA
\
0.4
\
g'"
.\
8 0.2
8 o.2
~
\
\
;0
I~
\
500 700 1.0 k
TJ' 25°C
~
II
\
4
'"~
'"
;;
1000 rnA
\500 rnA
50 70 100
200 300
IC. COLLECTOR CURRENT ImA)
\
:;
1\
\
O. 6
30
COLLECTOR SATURATION REGION
TJ c 250C
O.8
o.
J
IT] !500C
I
20
I-
""~
;
I
~
w
'"~
'">
'"~
Vc~. 210 V
<.>
'"
-5~OC
2010
in
~100
I
50
30
•
200
~
>
I--
.........
~
00.5
1.0
2.0
5.0
10
20
50
lB. BASE CURRENT IrnA)
100
200
>
500
FIGURE 11 -
00.2
.0
8
VB Elsa,) @ICIIB = 10
6 VBElon)@lVCE"2.0 IV
-::::
1.0
2.0
10
20
5.0
lB. BASE CURRENT ImA)
50
100
200
"ON" VOLTAGES
1.0
TJ·250C
0.5
-
- -~
.8
TJ ·25 0C
V8EI~t) ~ ICIIBI. ,d
.6 VBElon) @VCE - 2.0 V
- --t; V
..... ""
.4
4
O. 2
VCEI.. 'I@IC/IB = 10
010
20
30
--
V
50 70 100
200 300
IC. COLLECTOR CURRENT ImA)
i-'
.2
1....1.·...
VCE".,I@IC/IB= 10
500 700 1.0 k
0
10
20
30
50 70 100
200 300
Ic. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-230
500 700 1.0 k
2N5679 thru 2N5682
NPN
2N5681,2N5682
PNP
2N5679, 2N5680
FIGURE 12 - TEMPERATURE COEFFICIENTS
+1. 0
+1.0
'A7L1ES FOR lellB" hFE/5.0
'-'
~ +0.5
'Ove
5
i
-5~'e ~, 150,le_
---
FOR VeE(,,'1
'A~LlE~ FOR IleliB <;hFE/5 0
i?
:;+0.5
~
u
U
0
-55'et' 1500e
~ -0 5
-0.5
<>
-
~ -1.0
'-'
-55 0Cto 1500 C
....
«
~ -1.5
OVB FOR VBE
'"~ -2.0
~-1. 0
---
-550C to 15DoC
~-1. 5
OVB FOR VBE
'"
~-2. 0
20
30
50
10
100
200
300
500 100 10k
>-
I
i
I I
I
-2.510
20
50 10 100
200 300
Ie. COLLECTOR CURRENT (mAl
30
Ie. COLLECTOR CURRENT (mAl
FIGURE 13 -
500 100 1.0 k
COLLECTOR CUTOFF REGION
10 5
104
VeE' BO V
VeE' 80 V
/
./
/
/
3
104
....
---- --
....
I I
~
~
-
11
'8V~ FO~ veE!'''1
.5
TJ'150'e
TJ'150'e
~
~ 10
~
3
./
/
2
-
'"o
~ 102
i-
100'e
100'e
1
<>
'-'
:} 10 1"-
-
REVERSE
FORWARO
_REVERSE
./
25'e
+D.l
-0.1
-0.2
-0.3
I
10- -0.2
-0.5
-0.4
-0.1
FIGURE 14 -
+0 1
+D.4
+0.3
+0.5
10 3
TJ'150'e
VeE' 80 V
TJ,150'e
3
VeE - 80 Vdc
"
10 2
102
-
f--ioo'e
-100'e
1
=>
'-'
w
~
+0.2
BASE CUTOFF REGION
10 4
~
FORWARD
0
VBE. BASE·EMITTER VOLTAGE (VOLTSI
VBE. BASE·EMITTER VOLTAGE (VOLTSI
10
1
....
./
25°C
0
0_25'e
10 1
~
........
-25'e
10- I
100
t---+ REV RSE
=
FORWARD
10- 2
-0.2
10- 1
+D.2
+D.l
-0.1
-0.2
-0.3
VBE. BASE·EMITTER VOLTAGE (VOL TSI
REVERSE
-0.1
FORWARD
+D. 1
VSE. BASE·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-231
+D.2
+0.3
•
2N5793
2N5794
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
75
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
600
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
•
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
JAN, JTX, JTXV AVAILABLE
CASE 654-07, STYLE 1
One
Die
Both Die
Equal
Power
PD
500
2.9
600
3.4
mW
mWrC
DUAL TRANSISTORS
PD
1.2
6.9
2.0
11.43
Watts
mWrC
NPN SILICON
Emitter 3
-65 to +200
TJ, Tstg
5 EmItter
°C
Refer to MD2218,A for graphs.
= 25°C unless otherwise noted.)
ELECTRICAL CHARACTERISTICS (TA
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VEB
(IC
(IE
=
(lC
=
=
10 mAde, IB
10 !lAde, IC
50 Vde, IE
= 4.0 Vde,
=
= 0)
= 0)
= 0)
10 !lAde, IE
IC
Collector 1 to Collector 2 Leakage Current
= 0)
= 0)
(V1C-2C
=
± 50 Vde)
V(BR)CEO
40
V(BR)CBO
75
-
V(BR)EBO
6.0
Vde
ICBO
-
10
nAde
Vde
Vde
lEBO
-
10
nAde
IC1-C2
-
±1.0
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !lAde, VCE
hFE
=
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
2N5793
2N5794
10 Vde)
(lC
=
1.0 mAde, VCE
=
10 Vdc)
(lc
=
10 mAde, VCE
=
10 Vde)(I)
(lc
=
150 mAde, VCE
=
1.0 Vde)(l)
(lc
=
150 mAde, VCE
=
10 Vde)(l)
(lC
= 300 mAde, VCE =
10 Vde)(l)
Collector-Emitter Saturation Voltage(l)
(IC
(lC
Base-Emitter Saturation Voltage(l)
(lC
(lC
= 150 mAde, IB
= 300 mAde, IB
= 150 mAde, IB
= 300 mAde, IB
= 15 mAde)
= 30 mAde)
= 15 mAde)
= 30 mAde)
20
35
25
50
35
75
20
50
40
100
25
-
-
-
120
300
40
-
VCE(sat)
-
0.3
0.9
Vde
VBE(sat)
0.6
1.2
I.B
Vde
fy
MHz
-
SMALL-8IGNAL CHARACTERISTICS
Current-Gain -
= 20 mAde, VCE = 20 Vdc, f =
= 0, f = 100 kHz)
= 0.5 Vdc, IC = 0, f = 100 kHz)
Bandwidlh Product(2)
Collector-Base Capacitance
Emitter-Base Capacitance
(VCB
(VEB
=
(lC
10 Vde, IE
100 MHz)
250
-
Ceb
-
B.O
pF
Ceb
-
25
pF
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vde, VBE(off) = 0.5 Vdc,
IC = 150 mAde, IBI = 15 mAde)
td
(VCC = 30 Vde, IC = 150 mAde,
IBI = IB2 = 15 mAde)
ts
tr
tf
-
-
(1) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.O"k.
(2) fy is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-232
15
ns
30
ns
250
ns
60
ns
2N5795
2N5796
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Rating
Collector Current -
Continuous
One
Die
Both Die
Equal
Power
Emitter 3
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
500
2.9
600
3.4
mW
mWI"C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Po
1.2
6.9
2.0
11.43
Watts
mWI"C
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
JAN, JTX, JTXV AVAILABLE
CASE 654-07, STYLE 1
5 Emitter
DUAL TRANSISTORS
PNP SILICON
°c
Refer to MD2904A for graphs.
ELECTRICAL CHARACTERISTICS
= 25°C
(TA
unless otherwise noted.)
Characteristic
Symbol
Min
MIX
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VBE
(lC
(IE
=
(lC
=
=
10 mAde, IB
10 !-lAde, IC
50 Vde, IE
= 3.0 Vde,
=
= 0)
= 0)
= 0)
10 !-lAde, IE
IC
Collector 1 to Collector 2 Leakage Current
= 0)
= 0)
(V1C-2C
V(BR)CEO
60
V(BR)CBO
60
V(BR)EBO
5.0
ICBO
lEBO
=
±50 Vde
IC1-C2
-
-
-
Vde
Vde
Vde
20
nAde
100
nAde
±1.0
nAde
ON CHARACTERISTICS
DC Current Gain
(lC = 100 !-lAde, VCE
hFE
=
10 Vde)
(lC
=
1.0 mAde, VCE
=
10 Vde)
(lC
=
10 mAde, VCE
=
10 Vde)(l)
(lc
=
150 mAde, VCE
=
1.0 Vde)(l)
(lC
(lc
=
150 mAde, VCE
=
10 Vde)(l)
=
500 mAde, VCE
=
10 Vde)(l)
40
75
40
100
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
2N5795
2N5796
Collector-Emitter Saturation Voltage(l)
(lC
(lC
Base-Emitter Saturation Voltage(l)
(lc
(lC
= 150 mAde, IB
= 500 mAde, IB
= 150 mAde, IB
= 500 mAde, IB
= 15 mAde)
= 50 mAde)
= 15 mAde)
= 50 mAde)
40
100
20
50
40
100
40
50
VCE(sat)
VBE(sat)
-
-
--
-
120
300
-
0.4
1.6
Vde
1.3
2.6
Vde
SMALL-8IGNAL CHARACTERISTICS
Current-Gain -
= 50 mAde, VCE = 20 Vde, f =
= 0, f = 100 kHz)
= 2.0 Vde, IC = 0, f = 100 kHz)
Bandwidth Product(2)
Collector-Base Capacitance
Emitter-Base Capacitance
(lc
100 MHz)
iT
200
-
MHz
8.0
pF
30
pF
Ceb
-
(VCC = 30 Vde, VBE(off) = 0.5 Vde,
IC = 150 mAde, IBl = 15 mAde)
Id
-
12
ns
tr
-
35
ns
(VCC = 30 Vde, IC = 150 mAde,
IBl = 182 = 15 mAde)
ts
100
ns
40
ns
(VCB
(VEB
=
10 Vde, IE
Ceb
SWITCHING CHARACTERISTICS ISee Figure 1)
Delay Time
Rise Time
Storage Time
Fall Time
tf
-
(1) Pulse Test: Pulse Width .. 300 /LS, Duty Cycle .. 2.0%.
(2) iT is defined as the frequency at which Ihfel extrapolates to unity.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3·233
•
2N5859
MAXIMUM RATINGS
Symbol
Value
Unh
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Coliector'Base Voltage
VCBO
80
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
2.0
Ade
Total Device Dissipation @ TA = 25°C
Derate above 25'C
Po
1.0
6.0
Watt
mWrC
Total Device Dissipation @ TC = 25'C
Derate above 25°C
Po
5.0
28.6
Watts
mWrC
TJ, Tstg
-65 to +200
·C
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
•
NPNSIUCON
Symbol
Characteristic
Max
Unit
Thermal Resistance, Junction to Case
R8JC
35
·C/W
Thermal Resistance, Junction to Ambient
R8JA
175
.c/w
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unh
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
(lC
=
(lC
=
10 mAde, IB
100 !lAde, IE
= 0)
= 0)
(IE = 10 !lAde, IC = 0)
= 50 Vde, VBE(off) = 2.0 Vde)
= 50 Vde, VBE(off) = 2.0 Vde, TA = 75'C)
Collector Cutoff Current (VCB = 50 Vde, IE = 0)
(VCB = 50 Vde, IE = 0, TA = 75'C)
Emitter Cutoff Current (VBE = 5.0 Vde, IC = 0)
Emitter-Base Breakdown Voltage
Collector Cutoff Cu rrent
(VCE
(VCE
V(BR)CEO
40
V(BR)CBO
80
ytBR)EBO
6.0
ICEX
-
ICBO
lEBO
-
-
Vde
Vde
Vde
-
0.2
5.0
!lAde
-
0.25
5.0
!lAde
-
0.1
!lAde
30
15
10
120
100
VCE(sat)
-
0.4
0.7
Vde
VBE(sat)
0.8
0.9
1.0
1.25
Vde
fr
250
ON CHARACTERISTICS
DC Current Gain
(lC
(lC
(lC
=
=
=
500 mAde, VCE = 1.0 Vde)
1.0 Ade, VCE = 1.0 Vde)
1.0 Ade, VCE = 1.0 Vde, TA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC
(lC
hFE
= -55'C)
= 500 mAde, IB = 50 mAde)
= 1.0 Ade, IB = 100 mAde)
= 500 mAde, IB = 50 mAde)
= 1.0 Ade, IB = 100 mAde)
(lC
(lC
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -
Bandwidth Product
(lC
=
= 10 Vde, f =
= 0, f = 100 kHz)
= 0, f = 100 kHz)
50 mAde, VCE
100 MHz)
-
MHz
7.0
pF
60
pF
Ceb
-
td
-
6.0
ns
tr
-
30
ns
Storage Time
(VCC = 30 Vde, IC = 1.0 Ade,
IB1 = IB2 = 100 mAde) (Figures 9 and 11)
ts
-
35
ns
Fall Time
(VCC = 30 Vde, IC = 1.0 Ade,
IB1 = IB2 = 100 mAde) (Figures 9 and 11)
tf
-
35
ns
Collector-Base Capacitance
Emitter-Base Capacitance
(VCB
(VEB
=
=
10 Vde, IE
0.5 Vde, IC
Ceb
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 30 Vde, VBE(off) = 2.0 Vde, IC
IB1 = 100 mAde) (Figures 8 and 10)
=
1.0 Ade,
Rise Time
(VCC = 30 Vde, VBE(off) = 2.0 Vde, IC
IB1 = 100 mAde) (Figures 8 and 10)
=
1.0 Ade,
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-234
2N5859
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°e unless otherwise noted)
Characteristic
Turn-On Time
(Vee = 30 Vde, VeE(off) = 2.0 Vde, IC
leI = 100 mAde) (Figures 8 and 10)
=
Symbol
Min
Max
Unit
ton
-
35
ns
Ioff
-
60
ns
1.0 Ade,
Turn-Off Time
(VCC = 30 Vde, IC = 1.0 Ade,
leI = le2 = 100 mAde) (Figures 9 and 11)
(1) Pulse Test: Pulse Width", 300 Il-S, Duty Cycle'" 2.0%.
FIGURE 1 - ACTlVE·REGION SAFE OPERATING AREA
2.0 k
~
de
700
~
11~Ls
'-j.,
1.0 k
lOps
\
There are two limitations on the power handling abilitv of a
SOO
transistor: junction temperature and second breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
1,Oms
300
TJ = 200°C
- - - BONOING WIRE LlMITEO
- - - THERMALLY LIMITED
@TC=2SoC
- - SECOND BREAKDOWN LIMITED
PULSE DUTY CYCLE.; 10
SECOND BREAKDOWN FOR de:
00 NOT OPERATE ABOVE THERMAL
LIMITATION FOR TIMES GREATER
THAN 1.0 SECOND.
100
70
0
0
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate.
The data of Figur. 1 is based on TJlpk) = lO0oC; TC is variable
depending on conditions. Pulse curves are valid for duty cvcles of
10% provided TJlpk)S 2000C. At high case temperatures. thermal
\
'"
200
\
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
20
O.S 0.7
1.0
2.0
3.0
S.O 7.0 10
20
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS)
30
50
TYPICAL DC CHARACTERISTICS
FIGURE 3 - "ON" VOLTAGES
FIGURE 2 - DC CURRENT GAIN
400
14
iJ
~ 11 2S0C
r-- -
2SoC
200
z
"...
t.O
~
BO
c
60
~
.......
100
13
u
-
_.-55 0C
40
.......
~
0
25°C
10 V
~
'"~
w
"
r-...
~
-
10
06 ==-VSE(sat)@l!ellB '" 10
100
SO
200
-VCE(,,,)@ICIIB - 10
SOD
10
1000
50
20
~
w
t.O
~
\
£3
;;
TJ ~ 25°C
~
~
8
DB
'APPLIES FOR ICIIB
1000
I
+20
..§. +15
w
~
500
FIGURE 5 - TEMPERATURE COEFFICIENTS
"
......
200
+25
:;
'">
100
IC. COLLECTOR CURRENT (mA)
FIGURE 4 - COLLECTOR SATURATION REGION
'"~
--
02
IC. COLLECTOR CURRENT (rnA)
10
~
>' 04
......
20
20
-
DB
>
"
10
r-- TJ
12
VCE
p
-25
100
200
500
10
lB. BASE CURRENT ImA)
20
30
50
100
200
300
IC. COLLECTOR CURRENT ImA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-235
500
1000
•
2N5859
TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 6 - CURRENT·GAIN-BANDWIDTH PRODUCT
~ 500
~
-,;"
t;
g
o
g;
x
b
~
z
300
",..-
~
~
~
w
'"z
V
'"
20
;3
10
e;
~
VCE = 10 Vdc
TJ = 25'C
I
Z
;;: 100
",'
'",.:.
•
z
~
'"::>
~
........Ceb
........
30
l-
;li
TJ = 25'C
50
"
/""
200
FIGURE 7 - CAPACITANCE
100
70
7.0
-
r-
ecb
5.0
70
50
4.0
6.0
10
20
40
60
100
200
3.0
01
400
0.2
100
50
w
::;;
1,@VCC-l0Vdc
;::
20
"""- 1'"",
'"
~
10
5.0
Id@VOB;OV
2.0
I I I I II
10
20
50
vcc!
]:
3~tdc I;'
i"-
100
~
500
~
10
1000
I
.........
~
20
200
"
30
10
Vd~
I, -IC/IB = 20
I I
ICIIB = 10 1
J
;::
.......
c = lJ
jJj25'f
ICIIB -10
......
k::: '?
20
""
-
30
50
100
200
300
500
1000
Ie. COLLECTOR CURRENT (mAl
Ie. COLLECTOR CURRENT (mAl
FIGURE 11 - TURN-DFF TIME TEST CIRCUIT
FIGURE 10 - TURN-DN TIME TEST CIRCUIT
Vin TO 50 OHM
OSCILLOSCOPE
Vin TO 50 OHM
OSCILLOSCOPE
+ 21 V
VinSL
+10.9n
Vin
-2.0V ---- --0
50
20
J2
I
If@ICII B 20
70
50
w
::;;
...-,,:::~~
VOB=2Vdc
Vcc = 30 Vdc
100
10
200
.'cliBI= 16
Tr25'C
~
.......
5.0
FIGURE 9 - TURN·OFF TIME
FIGURE 8 - TURN·ON TIME
]
2.0
VR. REVERSE VOLTAGE (VOLTSI
200
100
1.0
0.5
IC. COLLECTOR CURRENT (mAl
aV
30 4950
4950
100
VOUI
100
100
VOUI TO 50 OHM
OSCILLOSCOPE
...
100
+ 10.9 V
I, '" 1.0 ns
Vin
P.W. "200 ns
DUTY CYCLE '" 2.0%
- 2.0 V
GENERATOR SOURCE IMPEDANCE = 50!l.
4950
10%
10%
Vin
_~'WV--fo)
VOUI TO 50 OHM
OSCILLOSCOPE
100
".~
-i£
If'" 1.0 ns
P.W. " 1.0 p.s
DUTY CYCLE '" 2.0%
GENERATOR SOURCE IMPEDANCE = 50!l.
lO%
~~':J"'
VOUI
Lis
If
1=-1011
ALL WAVEFORMS AND BIAS LEVELS MUST BE SET WITH UNIT IN CIRCUIT.
ALL WAVEFORMS AND BIAS LEVELS MUST BE SET WITH UNIT IN CIRCUIT.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-236
2N5861
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vde
Collector-Base Voltage
VCBO
100
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
2.0
Ade
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
1.0
6.0
Watt
mW/'C
Total Device Dissipation @ T C = 25'C
Derate above 25'C
Po
5.0
28.6
Watts
mW/'C
TJ, Tstg
-65 to +200
'c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
..
SWITCHING TRANSISTOR
NPNSIUCON
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
50
-
Vde
Collector-Base Breakdown Voltage
(lC = 100 !
'-'
4.0
5.0
6.0
20
10
60
40
100
200
3.0
0.1
400
0.,
0.2
IC, COLLECTOR CURRENT (mA)
FIGURE 3 -
100
50
~
.,
...... 1'-0.
20
....
1"'-....
;::
10
1,@VCC=10Vdc
VCC = 30 Vdc
~
,../
i"-
70
]
>'
w
td@VOB=OV
VOB = 2.0Vdc
VCC = 30 Vdc
20
50
100
,0
20
10
500
10
1000
FIGURE 5 -
......
V ........
/
r- ...
i>
"-
30
.......
200
-LI~IB= 10
......
~
~,....""
,.;>
TJ = 2,oC
t,@lc/IB= 20
....
/' ./
/'
20
30
100
50
200
300
,00
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
TURN·ON TIME TEST CIRCUIT
+5.8 V
Vin to 50 Ohm
OSCILLOSCOPE
,.SVn
Vin
____ --0
-2.0 V
49,0
-2.0 V
10%
100
---+--""'10%
' "' _~J,~i'O_%_--
50
1.0 ns
P.W." 200
Outy Cycl • ..;; 2.0%
Generator Source Impedance"" 50 n
Pulse Generator: EH1421 Timing Unit and 1121 Pulse Driver
Oscilloscope: Tektronix 661 Sampling Scope
tr "
100
VC~ = Jo ~d~
tt@ IcllB = 10
I Ic1IB=20
......
;::
20
10
10
l'
50
20
',0
5.0
FIGURE 4 - TURN-OFF TIME
100
]
2.0
200
IcllB = 10
TJ = 2,oC
~
1.0
VR, REVERSE VOLTAGE (VOLTS)
TURN-ON TIME
200
w
CAPACITANCE
100
70
V
:;
FIGURE 2 -
BANDWIDTH PRODUCT
VCE = 10 Vdc
t=100MHz
TJ=25 0 C
n'
Vin during ton interval must be +5.8 V.
All waveforms and bias levels must be set with unit in circuit.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
3·238
1000
2N5861
RGURE 6 -
n
S.8V
Vin
-4.0 V
TURN-OFF TIME TEST CIRCUIT
VIn
Vin to 50 Ohm
+S'8V~
OSCILLOSCOPE
--=1- - -~O
-
49S0
-
_ _ _ _ -4.0 V
toff
100
50
tf"- 1.0 ns
P.W.~l.OJ.l$
Vout--+--
Duty Cycle .. 2.0%
Generator Source Impedance:: 50 n
Pulse Generator: EH1421 Timing Unit and 1121 Pulse Driver
Oscilloscope: Tektronix 661 Sampling Scope
Vin during toff interval must be -4.0 V.
All waveforms and bias levels must be set with unit in circuit.
RGURE 1 200
z
<1
TJ
=
DC CURRENT GAIN
FIGURE 8 -
I
12SoC
2SoC
""-
-SSoC
r--
100
1.4
VCE
=
;;; 1.0
:;
I-
~
50
'"
B
u
30
Q
~
~
'" 0.8
2!
f'..
:;
'"
t:::
I---
w
to
0.6 r-VSElsatl@ICilS-lO
'">
I'-
:> 04
I'
20
.--1"'"
0.2
20
so
30
r-VCElsatl@IC/IS
a
10
10
100
200
300
1000
SOO
10
50
ACTIVE-REGION SAFE OPERATING AREA
-
1.0
I-
~
cc
a
FIGURE 10 -
1000
TEMPERATURE COEFRCIENTS
~ +2. 0
"'J
I-
:>
05
de
-"'
,
0.3
02
.........
'"
'"
TJ = 200°C
O. 1 - - - Second Breakdown LI'T1ited
- - Bondmg Wire Limited
'"u~O.O 5
Thermal LimltatlOns@Tc = 2SoC
Pulse Duty Cycle "- 10%
Applicable To Rated BVCEO
00 3
8=",
i
w
~
r---
~
+0.5 r--'OVC fOR VCElsatl
t-
-0.5
I-
~ -1.0
~
...... 1-'
-1.5 t--OVS FOR VBE
t-
I-
~
0.0 2
30
'APPLIES fOR ICilS < hfE/2
.§ +1. S
~
~ +1. 0
U
lOllS
~
sao
200
+2 S
~
'"
100
IC, COLLECTOR CURRENT 1m AI .
0
:'>
10
20
IC, COLLECTOR CURRENT ImAI
FIGURE 9 -
•
'--- TJ = 2SoC
1.2
1.0 Vde
)0
to
"ON" VOLTAGES
-2.0
-2.5
4.0
60
8.0
10
20
30
40
10
60
VCE, COLLECTOR·EMITTER VOLTAGE IVOL TSI
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate.
20
30
50
100
200
300
SOD
1000
IC, COLLECTOR CURRENT ImAI
The data of Figure 9 is based on TJ(pkl = 200°C; TC is variable
depending on conditions. Pulse curves are valid for duty cycles of
10% provided TJlpklS 200°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by secondary breakdown.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-239
2N6430
2N6431
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
2N6430
2N6431
Unit
Collector-Emitter Voltage
Rating
VCEO
200
300
Vdc
Co "ector-Base Voltage
VCBO
200
300
Vdc
Emitter-Base Voltage
VEBO
6.0
IC
50
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
500
2.B6
mW
mWfC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
1.B
10.3
Watts
mWfC
TJ, Totg
-65 to +200
°C
Co "ector Current -
•
Continuous
Operating and Storage Junction
Temperature Range
Vdc
GENERAL PURPOSE
TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lc = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 0.1 mAdc,lE = 0)
200
300
-
200
300
-
2N6430
2N6431
V(BR)EBO
6.0
-
ICBO
2N6430
2N6431
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
Vdc
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(YCB = 160 Vdc)
(VCB = 200 Vdc)
Vdc
V(BR)CEO
2N6430
2N6431
-
Vdc
!LAdc
0.1
0.1
0.1
!LAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 1.0 mAdc, VCE
(lC = 10 mAdc, VCE
(lC = 30 mAdc, VCE
hFE
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
-
25
40
50
200
-
Co "ector-Emitter Saturation Voltage
(lC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
-
0.5
Vdc
Base-Emitter Saturation Voltage
(lC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
-
0.9
Vdc
tr
50
500
MHz
Ccb
-
4.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Co"ector-Base Capacitance
(VCB = 20 Vdc, IE = 0, f
=
1.0 MHz)
(1) Pulse Test: Pulse Width"" 300 p.s, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-240
2N6432
2N6433
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
!
.:.~"'""'
Symbol
2N6432
2N6433
Unit
Collector-Emitter Voltage
VCEO
200
300
Vdc
Collector-Base Voltage
VCBO
200
300
Vdc
Emitter-Base Voltage
VEBO
5.0
IC
500
mA
Total Device Dissipation @ TA = 25'C
Derate above 25'C
PD
500
2.86
mW
mWfC
Total Device Dissipation @ TC = 25'C
Derate above 25'C
PD
1.8
10.3
Watts
mWfC
GENERAL PURPOSE
TRANSISTORS
TJ, Tstg
-65 to +200
'C
PNPSIUCON
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
Vdc
3
2
' Emitter
1
..
Refer to 2N3743 for graphs.
ELECTRICAL CHARACTERISTICS ITA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
IIc = 1.0 mAde, IB = 0)
Collector-Base Breakdown Voltage
IIc = 0.1 mAde, IE = 0)
200
300
-
200
300
-
5.0
-
-
0.25
0.25
-
0.1
25
40
30
-
Vde
V(BR)CBO
2N6432
2N6433
Emitter-Base Breakdown Voltage
liE = 0.1 mAde,lc = 0)
Collector Cutoff Current
(VCB = 160 Vde)
(VCB = 200 Vde)
Vde
V(BR)CEO
2N6432
2N6433
V(BR)EBO
ICBO
2N6432
2N6433
Emitter Cutoff Current
IVEB = 3.0 Vde, IC = 0)
iEBO
Vde
pAde
pAde
ON CHARACTERISTICS
DC Current Gain
IIc = 1.0 mAde, VCE = 10 Vde)
IIc = 10 mAde, VCE = 10 Vde)
IIc = 30 mAde, VCE = 10 Vde)
hFE
Collector-Emitter Saturation Voltage
IIc = 20 mAde, IB = 2.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
IIc = 20 mAde, IB = 2.0 mAde)
VBElsat)
-
tr
-
150
0.5
Vde
0.9
Vde
50
500
MHz
-
6.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
IIc = 10 mAde, VCE = 20 Vde, f = 20 MHz)
Collector-Base Capacitance
(VCB = 20 Vde, IE = 0, f
=
Ceb
1.0 MHz)
11) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-241
PNP Hermetic Silicon
2N6987
2N6988
Quad General-Purpose
Transistors
Dual-In-Line and Flatpack
Full MiI-S-19500 Qualified to
JAN, JTX and JTXV Levels
2N6987
CERAMIC
CASE 632-08,
STYLE 1 " "
TO-116
14
l&i~~l
· .. designed for general-purpose switching circuits and DC to VHF
amplifier applications.
•
•
•
•
•
Four Isolated Transistors
DC Current Gain Specified - 0.1 to 500 mAdc
Low Collector-Cutoff Current -ICBO = 10 nAdc (Max) @ VCB = 50 Vdc
High Collector Breakdown Voltages - V(BR)CEO = 60 Vdc (Min)
- V(BR)CBO = 60 Vdc (Min)
• Transistors Similar to 2N2907A
• M19500/2N6987, 2N6988
1234567
14
~
1 •
MAXIMUM RATINGS
QUAD TRANSISTORS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
60
Vdc
Vdc
Collector-Base Voltage
VCB
60
Emitter-Base Voltage
VEB
5.0
Vdc
IC
600
mAdc
Collector Current -
Continuous
2N6987
Total Power Dissipation @ TA = 25"C
Derate above 25"C
PD
2N6988
Total Power Dissipation @ TA = 25"C
Derate above 25"C
PD
Operating and Storage Junction
Temperature Range
2
~1 6
r-- ...........
~ 1. 4
z
Q
~
u;
1
~
0.8
~
~ 06
~O.4
O. 2
Total
Device
0.525
3.0
1.5
8.57
Watts
mWFC
0.14
0.8
0.4
2.29
Watts
mWFC
-65 to +200
TJ, Tstg
"C
Table 1. Product Classifications
~87 TOtAL PACKAGE
1. 2
PNPSIUCON
Each
Transistor
I I
I J
1. 8
2N6988
CERAMIC
CASE 607-04
STYLE 1
JAN JTX JTXV -
I~
Controlled Lot with Sample Environmental and Life Testing
100% Processing Plus Sample Environmental and Life Testing
Same as JTX Plus 100% Internal Visual Inspection
p~CKAGEI...........
2N6988 TOTAL
........
II
I
'
,
2N6987 EACH TRANSISTOR
" ""t---.L.
I
I
I
80
100
120
r-2N6~88E.JH~
20
40
60
r-....
140
""" '"'
160
TC, CASE TEMPERATURE I"CI
180
200
Figure 1. Power Temperature Derating Curve
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise
noted)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
IIc = 10 mAdc, IB = 0)
V(BR)CEO
60
-
Vdc
Collector-Base Breakdown Voltage IIC
= 10 pAdc, IE = 0)
= 10 pAdc. IC = 0)
Collector Cutoff Current liE = 0, VCB = 50 Vdc)
(IE = 0, VCB = 50 V, TA = 150"C)
Emitter Cutoff Current IIC = 0, VCB = 3.5 Vdc)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage (IE
V(BR)EBO
5.0
-
Vdc
ICBO
-
-
10
10
nAdc
pA
-
50
nAdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
lEBO
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-242
2N6987,2N6988
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min
Unit
Max
ON CHARACTERISTICS
DC Current Gain(1)
(lC = 0.1 mA, VCE = 10 Vdc)
(lc = 1.0 mA, VCE = 10 Vdc)
(lc = 10 mAde, VCE = 10 Vdc)
(lC = 150 mAde, VCE = 10 Vdc)
(lC = 500 mAde, VCE = 10 Vdc)
(lc = 10 mA, VCE = 10 V, TA = -55°C)
=
=
hFE
75
100
100
100
50
50
= 15 mAde)
= 50 mAde)
450
300
-
VCE(sat)
-
0.4
1.6
Vdc
VBE(sat)
-
1.3
2.6
Vdc
hfe
100
-
-
Ihfel
2.0
B.O
-
Output Capacitance (VCB
Cobo
-
B.O
pF
Input Capacitance (VBE
Cibo
-
30
pF
Turn-On Time (VCC = 30 Vdc, VBE(off) = 0.5 Vdc,
IC = 150 mAde, IB1 = 15 mAde) (Figure 2)
ton
-
45
ns
Turn-Off Time (VCC = 30 Vdc, IC = 150 mAde,
IB1 = IB2 = 15 mAde) (Figure 3)
toff
-
300
ns
Collector-Emitter Saturation Voltage (lC
(lC
Base-Emitter Saturation Voltage (lc
(lC
=
=
150 mAde, IB
500 mAde, IB
150 mAde, IB
500 mAde, IB
= 15 mAde)
= 50 mAde)
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
(VCE = 10 V, IC = 1.0 mA. f
=
1.0 kHz)
Magnitude of Small Signal Current-Gain
(lc = 50 mAde, VCE = 20 Vdc, f = 100 MHz)
= 10 Vdc, IE = 0, f = 100 kHz to 1.0 MHz)
= 0.5 Vdc, IC = 0, f = 100 kHz to 1.0 MHz)
SWITCHING CHARACTERISTICS
(1 )Pulse Test: Pulse Width ~ 300 ~s, Duty Cycle
=
2%.
GENERATOR RISE TIME'" 2 ns
PW '" 200 ns
OUTY CYCLE = 2%
- 30 V
'SCOPE
Rin> 100 k!!
Cin::::; 12 pF
RISE TIME", 5 ns
20 ill
200 !!
OUTPUT
50!!
20 k!!
OUTPUT
SCOPE
Rin > 100 ill
Cin"'12pF
RISE TIME", 5 ns
50 !!
DUTY CYCLE
=
2%
Figure 3. toft Test Circuit
Figure 2. ton Test Circuit
Table 2. JTX, JTXV 100% Processing Steps
JTX
-
Internal Visual (Mil-Std-750, Method 2072)
JTXV
100%
High Temperature Storage (Mil-Std-750, Method 1032)
100%
100%
Thermal Shock (Mil-Std-750, Method 1051 Condo F*)
100%
100%
Constant Acceleration (Mil-Std-750, Method 2006, 20 KGs, Y1)
100%
100%
100%
100%
READ Electrical Parameters (Group A)
100%
100%
High Temperature Reverse Bias (Mil-Std-750, Method 1039, Condo A)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Power Burn-In (Mil-Std·750, Method 1039, Condo B)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Hermetic Seal (Fine
'T(LOWI = - 55"C
**Cond. G, Fine Leak
=
+
Gross Leak) (Mil-Std-750, Method 1071, Condo G or H)*'
1 x 10- 7 ATM. CC/sec.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-243
•
2N6987,2N6988
Table 3. Simplified Hi-Rei Product Flow
JAN
JTX
JTXV
Commercial
Product
Commercial
Product
100%
Pre Cap Visual
Group A. B. C
Sample
Test
100%
Test
100%
Test
Group A. B. C
Sample
Test
Group A. B. C
Sample
Test
+
Ship
~
~
Ship
~
~
~
Ship
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-244
~
+
NPN Hermetic Silicon
2N6989
2N6990
Quad General-Purpose
Transistors
Dual-In-Line and Flatpack
Full Mil-S-19500 Qualified to
JAN, JTX and JTXV Levels
2N6989
_
CERAMIC
CASE 632-08, STYLE 1
14
TO-116
li¢i~!¢il
· .. designed for general-purpose switching circuits and DC to VHF
amplifier applications.
•
•
•
•
Four Isolated Transistors
DC Current Gain Specified - 0.1 to 500 mAdc
Low Collector-Cutoff Current - ICBO = 10 nAdc (Max) @ VCB = 60 Vdc
High Collector Breakdown Voltages - V(BR)CEO = 50 Vdc (Min)
- V(BR)CBO = 75 Vdc (Min)
• Transistors Similar to 2N2222A
• M19500/2N6989, 2N6990
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
50
Vdc
Vdc
Collector-Base Voltage
VCB
75
Emitter-Base Voltage
VEB
6.0
Vdc
IC
800
mAde
Collector Current -
Continuous
Each
2N6989
Total Power DisSipation @ TA = 25'C
Derate above 25'C
Po
2N6990
Total Power Dissipation @ TA = 25'C
Derate above 25'C
Po
Operating and Storage Junction
Temperature Range
2
~1
~
6
1. 41--:-....
~ O.B1 r~ 06
0.2
NPN SILICON
Total
Device
0.525
3.0
1.5
8.57
Watts
mWI'C
0.14
0.8
0.4
2.29
Watts
mWI'C
-65 to +200
'c
Table 1. Product Classifications
I~
~ 2
~O,4
1~
N~9 TOTtLPACbGE
Q 1.
ill
2N6990
CERAMIC
CASE 607-04
STYLE 1
QUAD TRANSISTORS
14
I I
I I
1.8
z
1234567
Transistor
TJ, Tstg
1
2N~0 TOr PA~KAGE:"""'"
AL
\.
JAN JTX JTXV -
" ' ......
2N6989 EACH TRANSISTOR
........
-2N6~90EJH~
20
40
Controlled Lot with Sample Environmental and Life Testing
100% Processing Plus Sample Environmental and Life Testing
Same as JTX Plus 100% Internal Visual Inspection
i'-.
60
BO
100 120 140
TC, CASE TEMPERATURE I'CI
160
t'......
180
200
Figure 1. Power Temperature Derating Curve
I
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted)
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 10 mAde, IB = 0)
V(BR)CEO
50
-
Vdc
Collector-Base Breakdown Voltage (lc
= 10 pAdc, IE = 0)
= 10 pAde, IC = 0)
Collector Cutoff Current (IE = 0, VCB = 60 Vde)
(IE = 0, VCB = 60 V, TA = 150'C)
Emitter Cutoff Current (lC = 0, VCB = 4.0 Vde)
VIBR)CBO
75
V(BR)EBO
6.0
-
Vde
Emitter-Base Breakdown Voltage (IE
10
10
nAde
pA
10
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
ICBO
lEBO
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-245
Vde
•
2N6989, 2N6990
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted)
I
Characteristic
Min
Symbol
Unit
Max
ON CHARACTERISTICS
DC Current Gain(l)
(lC ~ 0.1 mA. VCE ~ 10 Vdc)
(lc ~ 1.0 mA, VCE ~ 10 Vdc)
(IC ~ 10 mAde, VCE ~ 10 Vdc)
(lc ~ 150 mAde, VCE ~ 10 Vdc)
(lc ~ 500 mAde, VCE ~ 10 Vdc)
(lc ~ 10 mA. VCE ~ 10 V, TA ~ -55°C)
hFE
50
75
100
100
30
35
-
325
300
-
-
0.3
1.0
Vdc
VBE(sat)
0.6
1.2
2.0
Vdc
-
hfe
50
-
-
Ihfel
2.5
B.O
-
Cabo
-
B.O
pF
Cibo
-
25
pF
Turn-On Time (VCC ~ 30 Vdc, VBE(off) ~ 0.5 Vdc,
IC ~ 150 mAde, IBI ~ 15 mAde) (Figure 2)
ton
-
35
ns
Turn-Off Time (VCC ~ 30 Vdc, IC ~ 150 mAde,
IBI ~ IB2 ~ 15 mAde) (Figure 3)
toff
-
300
ns
~
Collector-Emitter Saturation Voltage (lC
(lc
Base-Emitter Saturation Voltage (lC
(lc
~
~
~
150 mAde, IB
500 mAde, IB
~
150 mAde, IB
500 mAde, IB
~
~
~
15 mAde)
50 mAde)
15 mAde)
50 mAde)
VCE(sat)
-
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
(VCE ~ 10 V, IC ~ 1.0 mA, f
•
~
1.0 kHz)
Magnitude of Small Signal Current-Gain
(lc ~ 20 mAde, VCE ~ 20 Vdc, f ~ 100 MHz)
Output Capacitance (VCB
Input Capacitance (VBE
~
~
10 Vdc, IE
0.5 Vdc, IC
~
~
0, f
0, f
~
~
100 kHz to 1.0 MHz)
100 kHz to 1.0 MHz)
SWITCHING CHARACTERISTICS
(l)Pulse Test: Pulse Width ~ 300 IJ.S, Duty Cycle
=
2%.
GENERATOR RISE TIME", 2 ns
PW '" 200 ns
+30V
DUTY CYCLE ~ 2%
SCOPE
Rin> 100 kfl
Cin'" 12 pF
RISE TIME", 5 ns
SCOPE
Rin > 100 kfl
Cin'" 12 pF
RISE TIME", 5 ns
200n
20 kfl
20 kfl
16Vn
OUTPUT
OUTPUT
~--~V
50n
50n
Figure 3. toft Test Circuit
Figure 2. ton Test Circuit
Table 2. JTX, JTXV 100% Processing Steps
JTX
JTXV
-
100%
High Temperature Storage (Mil-Std-750, Method 1032)
100%
100%
Thermal Shock (Mil-Std-750, Method 1051 Condo F*)
100%
100%
Constant Acceleration (Mil-Std-750, Method 2006, 20 KGs, VI)
100%
100%
100%
100%
READ Electrical Parameters (Group A)
100%
100%
High Temperature Reverse Bias (Mil-Std-750, Method 1039, Condo A)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Power Burn-In (Mil-Std-750, Method 1039, Condo B)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Internal Visual (Mil-Std-750, Method 2072)
Hermetic Seal (Fine
*T(LOWI ~ - 55°C
**Cond. G, Fine leak
+ Gross Leak) (Mil-Std-750, Method 1071, Condo G or H)**
= 1 x 10- 7 ATM. CC/sec.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-246
2N6989,2N6990
Table 3. Simplified Hi-Rei Product Flow
JAN
JTX
JTXV
Commercial
Commercial
Product
Product
100%
Pre Cap Visual
+
100%
100%
Test
Test
Group A. B. C
Sample
Test
t
Ship
+
+
+
+
Group A. B. C
Sample
Test
Group A. B. C
Sample
Test
Ship
Ship
t
+
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-247
BC107,A,B,C
thru
BC109,A, B,C
MAXIMUM RATINGS
Rating
Symbol
BC BC BC
107 108 109
Unit
Collector-Emitter Voltage
VCEO
45
25
25
Vdc
Collector-Base Voltage
VCBO
50
30
30
Vdc
Emitter-Base Voltage
VEBO
6
5
5
Collector Current - Continuous
Total Device Dissipation '" TA
Derate above 25°C
Total Device Dissipation
1(/
= 25°C
TC = 25°C
TC = 100°C
Vdc
3 Collector
IC
0.2
Amp
Po
0.6
2.2B
Watt
mW/oC
Po
1
Watt
6.67
mW/oC
-65 to +200
°c
.:~
, Emitter
Derate above 25°C
Operating and Storage Junction
Temperature Range
•
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TJ, T stg
TRANSISTORS
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
15
4
15
4
nA
OFF CHARACTERISTICS
Collector Base Leakage Current
(IE = 0, VCB = 45 V)
(IE = 0, VCB = 45 V, TAmb = 125°C)
(IE = 0, VCB = 25 V)
(IE = 0, VCB = 25 V, TAmb = 125°C)
Emitter Base Breakdown Voltage
(IE = 10 ~A, IC = 0)
ICBO
BC107
BC107
BCl OB/1 09
BCl OB/l 09
Collector Emitter Breakdown Voltage
(IC = 2 rnA, IE = 0)
~A
V
V(BR)EBO
BC107
BC10B/109
~A
nA
6
5
V
V(BR)CEO
BC107
BCl OB/1 09
45
25
ON CHARACTERISTICS
DC Current gain
IVCE = 5 V, IC
IVCE
=5
V, IC
=2
hFE
rnA)
= 10 I'A)
BC107
BC10B
BC109
110
110
200
450
BOO
BOO
A group
B group
C group
110
200
420
220
450
800
B group
C group
40
100
Base Emitter Saturation Voltage
(lc = 10 rnA, IB = 0.5 rnA)
(IC = 100 rnA, IB = 5 mAl
VBElsat)
Collector Emitter Saturation Voltage
(lc = 10 rnA, IB = 0.5 mAl
IIC = 100 rnA, IB = 5 rnA)
VCElsatl
Base Emitter on Voltage
IIC = 2 rnA, VCE = 5 V)
Ilc = 10 rnA, VCE = 5 VI
VBE(onl
V
0.7
1.0
V
0.25
0.60
V
0.70
0.77
0.55
Collector Knee Voltage
(lc = 10 rnA, IB = the value for which IC
= 11
rnA at VCE
= 1 VI
0.83
1.05
V
VCEIKI
0.4
0.6
DYNAMIC CHARACTERISTICS
Transition Frequency
(lc = 10 rnA, f = 100 MHz, VCE
Noise Figure
IVCE = 5 V, IC = 0.2 rnA, Rg
F = 30 Hz to 15 kHz
F = 1 kHz, l>F = 200 Hz
=5
MHz
fT
V)
150
300
NF
=2
dB
KOI
4
4
10
BC109
BC109
BC107/108
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-248
BC107, A, B, C thru BC109, A, B, C
ELECTRICAL CHARACTERISTICS (continued) (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Output Capacitance
(VCB = 10 V. f = 1 MHz)
Min
Typ
Max
Unit
pF
Cobo
4.5
h21e Parameters
(VCE = 5 V. IC = 2 rnA. f = 1 kHz)
h21e
h 11 e Parameters
(VCE = 5 V. IC = 2 rnA. f = 1 kHz)
BC107!10B
BC109
125
240
500
900
A group
B group
C group
125
240
450
260
500
900
1.6
3.2
6.0
4.5
B.5
15
KQ
hlle
A group
B group
C group
h22e Parameters
(VCE = 5 V. IC = 2 rnA. f = 1 kHz)
~hos
h22e
30
60
110
A group
B group
C group
•
FIGURE 1 - EMITTER-BASE CAPACITANCE
COLLECTOR-BASE CAPACITANCE
.
~1
. .....
~
14
...o
........
0
r-.....
6
r-....
J
.....:I~
-
2
OB
10.
-lit'
10'
102
VCBO. COLLECTOR·BASE VOLTAGE IVOLTSI
VEBO. COLLECTOR·EMITTER VOLTAGE IVOLTS)
AGURE 2 -
CURRENT GAIN -
FIGURE 3 - TOTAL PERMISSIBLE POWER DISSIPATION
BANDWIDTH PRODUCT
I
I
400
1
10V
~
300
i
~~
200
~
~
100
0
lit'
10·
; 0.50
T" 25·C
f 'l00~Hf
VC"2V
III!
III!
0.25
III!
I III
10'
"
~ 0.7 5
Athie..
.......
.........
r-
r- io--
"" """
r-- io--Rd1 i 1mb. " '
r-- ~
0
100
102
TEMP£RATURE I·CI
IC. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-249
200
BCI40-10, -16
BCI41-10, -16
MAXIMUM RATINGS
Symbol
BC
140
BC
141
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCBO
80
100
Vdc
Emitter-Base Voltage
VEBO
7
Vdc
Collector Current - Continuous
IC
1
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
0.8
4.6
Watt
mW;oC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
3.7
20
Watt
mW/oC
TJ, T stg
-65 to +200
°C
Rating
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
B
,~/{ .:~,~,
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
•
3 Collector
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RHJC
35
°C/W
Thermal Resistance, Junction to Ambient
RHJA
200
°C/W
Characteristic
NPN SILICON
Refer to 2N3019 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
100
100
nA
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCE = 60 V)
TA=150°C
Collector-Emitter Breakdown Voltage
(ICES = 100 ~A, IE = 0)
BCI40 Series
BC141 Series
ICES
Collector-Emitter Breakdown Voltage(l)
(lc = 30 mAo IB = 0)
V(BR)CES
V
V(BR)CEO
BCl40 Series
BC141 Series
~A
V
80
100
40
60
Emitter-Base Breakdown Voltage
(IE = 100 ~A, IC = 0)
V
V(BR)EBO
7
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 100 mA, VCE = 1 V)
for BCI40, 141, -10
for BC140, 141, -16
hFE
63
100
160
250
VCE(sat)
Collector-Emitter Saturation Voltage(l)
(lc = 1 A, IB = 0.1 A)
V
1
Base-Emitter Voltage(l)
(~ = 1 A, VCE = 1 V)
2
VBE(on)
V
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
(IC = 50 mA, VCE'= 10 V, f
Input Capacitance
(VEB = 0,5 V, IC
Capacitance
(IE = 0, VCB
50
MHz)
Cib
= 0, f = 1 MHz
Cob
= 10 V, I = 1 MHz)
Turn On Time
(lC = 150 mA. IBI
ton
= 7.5
mAl
Turn Off Time
(Ic = 150 mA, IBI
(1) Pulsed:
MHz
fT
= 20
toll
= IB2 = 7.5 mAl
Pulse Duration = 300 ~s, Duty Cycle = 1%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-250
80
25
250
850
pF
pF
ns
ns
BC160, -6, -10, -16
BC161, -6, -10, -16
MAXIMUM RATINGS
Symbol
BC
160
BC
161
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCBO
40
60
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current - Continuous
IC
1
Adc
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
O.B
4.6
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
3.7
20
Watt
mW/oC
TJ. Tstg
-65 to +200
°c
Rating
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Ii!
3
2
~~'''".'
I
I Emitter
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance. Junction to Ambient
Refer to 2N4033 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
-100
-100
-100
-100
nA
OFF CHARACTERISTICS
Collector Cutoff Current
IE = O. VCES = -40 V
VCES = -60 V
VCES = -40 V
VCES = -60 V
ICES
for
for
for
for
BCI60
BC161
BC160 TAmb = 150°C
BC161 TAmb = 150°C
Collector Emitter Breakdown Voltage
IC = -100 ~A. IE = 0
Collector-Emitter Breakdown Voltage(l)
IC = -10 mAo IB = 0
V(BR)CES
for BC16D Series
for BC161 Series
V
-40
-60
V(BR)CEO
for BC16D Series
for BC161 Series
~A
V
-40
-60
V(BR)EBO
Emittor-Base Breakdown Voltage
IE = -100 ~A. IC = 0
V
-5
ON CHARACTERISTICS
DC Current Gam(1)
IC = -100 mAo VCE = -1 V
hFE
for
for
for
for
BC16D.
BC160.
BC160.
BC160.
BC161
BC161. -6
BC161. -10
BC161. -16
40
40
63
100
Collector-Emitter Saturation Voltage(l)
(IC = -1 A. IB = -0.1 A)
VCE(sat)
Base-Emitter Voltage(l)
(lc = -1 A. VCE = -1 V)
VBE(on)
400·
100
160
250
V
-1
V
-1.7
SMALL SIGNAL CHARACTERISTICS
fT
Gam BandWidth Product
(IC = -50 mAo VCE = -10 V. f = 20 MHz
Input Capacitance
(VEB = -10 V. f = 1 MHz)
Cib
Turn Off Time
(lc = -100 mAo IBI
pF
lBO
Cobo
Output Capacitanc~
(VCB = -10 V. IE = O. f = 1 MHz)
Turn On Time
(IC = -100 mAo IBI = -5
MHz
50
pF
30
Ton
ns
500
~A)
Toft
(I) Pulsed: Pulse Duration = 300
~S.
ns
650
=IB2=-5~A)
Duty Cycle = 1%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-251
•
BC177,A,B,C
thru
MAXIMUM RATINGS
Rating
Symbol
BC
BC
BC
BC179,A,B,C
Unit
117 178 179
Collector-Emitter Voltage
VCEO
45
25
20
Vdc
Collector-Emitter Voltage
VCES
50
30
25
Vdc
Collector-Base Voltage
VCBO
50
30
25
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current - Continuous
IC
0.2
Amp
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
0.6
2.2B
Watt
mW/oC
Total Device Dissipation @TC = 25°C
TC = 100°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, T stg
CASE 22-03, STYLE 1
TO-18 (TO-206AAJ
1
Watt
6.67
mW/oC
-65 to +200
°c
TRANSISTORS
THERMAL CHARACTERISTICS
Cha racteristic
PNP SILICON
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
100
4
nA
OFF CHARACTERISTICS
Collector Emitter Leakage Current
(VCE = 20 V, IE = 0)
(VCE = 20 V, IE = 0, TAmb = 125°C)
ICES
~A
Collector Base Breakdown Voltage
(IC = 10 ~A)
BCl77
BC178
BC179
V(BR)CBO
50
30
25
V
Collector Emitter Breakdown Voltage
(IC = 2 rnA, IE = 0)
BCl77
BC178
BC179
V(BR)CEO
45
25
20
V
V(BR)E80
5
V
hFE
120
120
180
120
180
380
Emitter Base Breakdown Voltage
(IE = 10 ~A, IC = 0)
ON CHARACTERISTICS
BCl77
8C178
BC179
A Group
8 Group
C Group
DC Current Gain
(lc = 2 rnA, VCE = 5 V)
Collector Emitter Saturation Voltage
(lc = 10 rnA. 18 = 0.5 rnA)
(IC = 100 rnA. IB = 5 rnA)
VCE(sat)
Base Emitter Saturation Voltage
(IC = 10 rnA, 18 = 0.5 rnA)
(lc = 100 rnA, 18 = 5 rnA)
VBE(sat)
Base Emitter on Voltage
(IC = 2 rnA, VCE = 5 V)
V8E(on)
460
800
!l00
220
460
800
0.2
0.6
0.7
0.9
0.75
0.6
Collector Knee Voltage
(lc = 10 rnA. 18 = the value lor which
(lc = 11 rnA, at VCE = lV)
0.8
VCE(K)
0.4
0.6
V
V
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
(VCE = 5 V, IC = 10 rnA, I = 50 MHz)
Noise Figure
(VCE = 5 V, IC = 0.2 rnA, Rg = 2 KQ)
F = 30 Hz to 15 kHz
F = 1 kHz, F = 200 Hz
IT
MHz
200
300
NF
dB
4
4
10
8C179
8C179
8Cl77/178
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DI6DES
3-252
BC177, A, B, C thru BC179, A, B, C
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
3.5
4
BC177
BC178
BC179
A Group
B Group
C Group
h21 e Parameters
(VCE = 5 V, IC = 2 rnA, f
= 1 kHz)
h11 e Parameters
(VCE = 5 V, IC = 2 rnA, f
= 1 kHz)
A Group
B Group
C Group
h22e Parameters
(VGE = 5 V, IC = 2 rnA, f
= 1 kHz)
A Group
B Group
C Group
h21e
Unit
of
Cobo
Output Capacitance
(VCB = 10 V, f = 1 MHz)
125
125
240
125
240
450
500
900
900
260
500
900
1.6
3.2
6.0
4.5
8.5
15.0
h11e
KQ
h22e
Ilmhos
30
60
110
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-253
BC393
BC394
PNP
NPN
MAXIMUM RATINGS
Rating
Symbol
BC
394
Unit
Collector-Emitter Voltage
VCEO
180
180
Vdc
Collector-Base Voltage
VCBO
180
180
Vdc
Emitter-Base Voltage
VEBO
6
6
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Vdc
Collector Current - Continuous
IC
0.5
Amp
Total Device Dissipation @TA ='25°C
Derate above 25°C
Po
0.4
2.66
Watt
mW/oC
Po
1.5
Watt
10.0
mWrC
TJ, Tstg
-65 to +200
°c
Total Device Dissipation @TC
TC
Derate above 25°C
= 25°C
= 100°C
Operating and Storage Junction
Temperature Range
•
BC
393
THERMAL CHARACTERISTICS
HIGH VOLTAGE TRANSISTORS
Characteristic
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lC = 100 ~Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 ~Adc, IC = 0)
V(BR)EBO
Collector Cutoll Current
(VCB = 100 V, IE = 0)
Vdc
180
Vdc
180
Vdc
6
nA
ICBO
50
Collector-Emitter Cutoll
(VCE = 100 V, IB = 0) (TAmb
~A
ICE a
= 150°C)
50
ON CHARACTERISTICS(1)
DC Current Gain
(lc = 10 mA. VCE
hFE
= 10 V)
50
Collector-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 10 mAde, IB = 1 mAd c)
VBE(sat)
100
Vdc
0.15
0.3
0.7
0.9
50
110
200
-
3.5
7
-
75
--
-
100
-
--
400
-
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 20 mAde, VCE = 20 Vdc, I
Output Capacitance
(IE = 0, VCB = 20 Vdc, I
= 1 MHz)
Input Capacitance
(lc = 0, VEB = 0.5 Vdc, I
= 1 MHz)
Turn-On Time
(lBl = 10 mA, IC
= 50
Turn-all Time
(IB2 = 10 mAdc, IC
mAde, VCC
= 50
Cabo
Cib
• Pulse Test: Pulse Width S 300
~s,
ton
= 100 Vdc))
mAdc, VCC
MHz
IT
= 20 MHz)
toff
= 100 Vdc))
pF
ns
ns
Duty Cycle S 2%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-254
pF
8CY58 -VII, -VIII, -IX, -X
BCY59 -VII, -VIII, -IX, -X
MAXIMUM RATINGS
Rating
Symbol
BCY
BCY
58
59
Unit
CASE 22-03. STYLE 1
TO-18 (TO-206AA)
Collector-Emitter Voltage
VCEO
32
45
Vdc
Collector-Emitter Voltage
(RBE = 10 Ohms)
VCES
32
45
Vdc
Emitter-Base Voltage
VEBO
7
Vdc
IC
0.2
Amp
Collector Current - Continuous
Total Device Dissipation @ T A
Derate above 25°C
= 25°C
PD
0.6
2.28
Watt
mWjOC
Total Device Dissipation @TC
TC
Derate above 25°C
= 25°C
= 100°C
PD
1
Watt
6.67
mW/oC
TJ, T stg
-65 to +200
°c
Symbol
Max
Unit
Thermal Resistance. Junction to Case
RHJC
150
°C/W
Thermal Resistance, Junction to Ambient
RHJA
450
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
TRANSISTORS
Characteristic
I
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
I
Symbol
Min
BCY58
BCY59
V(BR)CEO
32
45
all
V(BR)EBO
Type
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IC = 0)
Emitter-Base Breakdown Voltage
(IE = lflAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 V)
(VCE = 45 V)
(VCE = 32 V, TA = 100°C, VBE
(VCE = 45 V, TA = 100°C, VBE
(VCE = 32 V, TA = 150°)
(VCE = 45 V, TA = 150°)
Vdc
Vdc
7
nAdc
= 0.2
= 0.2
Emitter Base Cutoff Current
(VEB = 5 V)
V)
V)
BCY58
BCY59
BCY58
BCY59
BCY58
BCY59
ICES
all
lEBO
0.2
0.2
ICEX
0.2
0.5
ICES
10
10
20
20
10
10
flAdc
flAdc
nAdc
10
ON CHARACTERISTICS
DC Current Gam
(lc = 10 flAdc, VCE
=5
(IC
=2
(IC
= 10 mAde, VCE =
(lc
mAde, VCE
=5
hFE
Vdc)
Vdc)
1 Vdc)
= 100 mAde, VCE = 1 Vdc)
Collector-Emitter Saturation Voltage
(lc = 100 mAde, IB = 2.5 mAde)
(IC = 10 mAde, IB = 0.25 mAl
Base-Emitter Saturation Voltage
(Ie = 10 mA, IB = 0.25 mAl
(Ie = 100 mA, IB = 2.5 mAl
Base-Emitter on Voltage
(lc = 2 mAde, VCE = 5 Vdc)
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X,8CY58-X
BCY59-VII, 8CY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, BCY58-IX
BCY59-X,8CY58-X
BCY59-VII, BCY58-VII
BCY59-VIII, BCY58-VIII
BCY59-IX, 8CY58-IX
BCY59-X, BCY58-X
BCY59-VII, BCY58-VII
BCY59-VIII, 8CY58-VIII
BCY59-IX, BCY58-IX
BCY59-X, BCY58-X
20
40
100
120
180
250
380
80
120
160
240
40
45
60
60
145
220
300
170
250
350
500
190
260
380
550
400
630
1000
0.15
0.05
0.30
0.12
0.70
0.35
0.6
0.75
0.70
0.90
0.85
1.2
0.55
0.62
0.70
220
310
460
630
Vdc
VCE(sat)
all
Vdc
VBE(sat)
all
Vdc
VBE(on)
all
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-255
BCY58, -VII, -VIII, -IX, -X, BCY59, -VII, -VIII, -IX, -X
I
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
I
= 25°C
unless otherwise noted.)
Type
I
Symbol
I
Min
Typ
125
200
Max
Unit
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
(lc = 10 mAdc, VCE = 5 V, I = 100 MHz)
all
Output Capacitance
(VCE = 10 Vdc, IC = 0, 1= 1 MHz)
all
Input Capacitance
(VBE = 0.5 V, IC = 0, I = 1 MHz)
all
Small Signal Current Gain
(IC = 2 mAdc, VCE = 5 Vdc, I = 1 kHz)
Output Admittance
(lc = 2 mAdc, VCE = 5 Vdc, I = 1 kHz)
•
(continued) (TA
Characteristic
Input Impedance
(lc = 2 mAde, VCE = 5 Vdc, I = 1 kHz)
Voltage Feedback Ratio
(lc = 2 mAde, VCE = 5 Vdc, I = kHz)
Noise Figure
(lc = 0.2 mAde, VCE = 5 Vdc,
RS = 2 Kohms, I = 1 kHz)
MHz
IT
pF
Cob
3.5
6
8
15
200
260
330
520
250
350
500
700
pF
Cib
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
BCY58-VII, BCY59-VII
BCY58-VIII, BCY59-VIII
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
BCY58-VII, BCY59-VII
BCY58-VIII,8CY59-VIlI
BCY58-IX, BCY59-IX
BCY58-X, BCY59-X
hie
(h21e)
125
175
250
350
flmhos
hoe
(h22e)
hie
(hl1e)
h re
(h12e)
30
50
60
100
Kohms
4.5
6
8.5
12
1.6
2.5
3.2
4.5
xl0- 4
1.5
2
2
3
dB
NF
all
2
6
SWITCHING CHARACTERISTICS
nS
IC - 10 rnA, IBI - 1 rnA, IB2 = 1 rnA
VBB = 3.6 V, Rl = R2 = 5 KQ
RL = 990 ohms
td
tr
ton
35
50
85
150
• See test circuit.
ts
tl
toll
400
80
480
800
IC = 100 rnA, IBl = 10 rnA, IB2 = 10 rnA
V8B = 5 V, Rl = 500 Q, R2 = 700 Q
RL = 98 ohms
td
tr
ton
5
50
55
150
• See test circuit.
ts
tl
toll
250
200
450
800
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-256
nS
BCY58, -VII, -VIII, -IX, -X, BCY59, -VII, -VIII, -IX, -X
TEST CI RCUIT
+VBB
-10V(VCC)
to oscilloscope
t,< 5n.
50n
Ri = 50n
Duty CVcle< 0.01
t,<5n.
-I-
~~ lN4935
Zj;;;' 100 Kn
FIGURE 2 - CURRENT GAIN
(BCY58-VI I IIBCY59-VI II)
FIGliRE 1 - CURRENT GAIN
IBCY58-VII/BCY59-VII)
1000
1000
100·C
z
...
f--
~
;(
...
to
r-
~
-50·C
25 ·C
f-f--
z
i'
f-
100
'"
::>
u
100·C
r-_
-;5~
-
;(
to
..
_.
100
.-.........
-50·C
B
~
~
::
::
VCE" 1 V
VCE" 1 V
10
10
10"1
10 0
10 '
10'
10·
lit'
COLLECTOR CURRENT (mAl
FIGURE 4 - CURRENT GAIN
I BCY58-X/BCY59-X)
FIGURE 3 - CURRENT GAIN
(BCY58-IX/BCY59-IX)
100 0
1000
--
25·C
.....
-.
.
0
.
0
100 ·C
25 ·C
..........
~ot;
.,
....... ...-
50·C
VeE = 1 V
VCE = 1 V
0
10
lit'
_
....
100·C
f..-- -
10'
10'
COLLECTOR CURRENT (mA'
10.
10'
COLLECTOR CURRENT (mAl
100
10'
10'
COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-257
10'
BCY58, -VII, -VIII, -IX, -X, BCY59, -VII, -VIII, -IX, -X
FIGURE 6 - SATURATION VOLTAGE
FIGURE 5 - SATURATION VOLTAGE
0.9
TA ~2S"~
0. 2
1/
V
lOO"C
VCE (sat) Iclla - 40
25"C
II I
I
I
-SS"C
0
loo
lit'
~
...
1/
I
~
0.6
>
/
,;
V
O. S
/
~
0.4
10'
10'
-
10
VCE = S V
I-
loo
V
=
-
V
~
If
2
0.7
0.6
O.S
I
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
100
t
v-
3.S.A
'"
~
T=I00 "C
IC. COLLECTOR CURRENT (rnA)
~
1
....
/
/
,
-- 1 k:-':.:
VOE (sat) Ic/la =40
t-
...--- --
10
--
!
--
1-.
FIGURE 8 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUITI
10'
'"'"=>
'"
;7
I-
lit'
FIGURE 7 - INPUT CHARACTERISTIC
(COMMON EMITrER CIRCUITI
i 10,
Ii
...
V
o. 7
'"<
/
V
t-
IC. COLLECTOR CURRENT (mA)
•
-
O.S
~
I~
~" /
~
y./ ...If
10
-
0.30 mA
0.25 rnA
0.20 rnA
t---
0. 15m
l
005mt-
4
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-258
__
0.351~A40 mt -
0.10mA
IY
O.S.A
-::::::I O.SO
rnA
0.4S mA
BCY58, -VII, -VIII, -IX, -X, BCY59, -VII, -VIII, -IX, -X
FIGURE 11 - OUTPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
100
0.35~
. /V
y
f. I%:: ,,-
FIGURE 12 - EMITTER-BASE CAPACITANCE
COLLECTOR-BASE CAPACITANCE
~3~;:mAI
alOmA
i
./
0115 ",A
~
,
I
V-
!
........
o lOmA
I
--t---- f---
r---
0
......
°t
~-
r--.
6
r-
5mA
0
I
10
.j
I
T
CUB
2
10'
-10-'
20
10'
VCBO. GOLLECT~R·BASE VOLTAGE IVOLTS)
VEBO. CULLECTOR·EMITTER VOLTAGE (VOLTS)
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
FIGURE 14 - TOTAL PERMISSIBLE POWER
DISSIPATION (BCY58/BCY59)
FIGURE 13 - CURRENT GAIN - BANDWIDTH PRODUCT
i
I
400
I
300
I
~
I
I~
100
!
0
10'1
10 0
~
II
jI
........
........
t--0.2 5
I II
III
Rth I case
0.5 0
T = 25"C
f=100MHz
VC=2 V
"-
.,
I I
~ I-'
~
......
~ 07 5
V~
~
200
1
IOV
"
i"'"- t:----..
::t:-:- ~
0
100
10'
TEMPERATURE ('C)
IC. COLLECTOR CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-259
~
r-- t:---..RthJamb.~
200
BCY70
thru
BCY72
MAXIMUM RATINGS
Symbol
Rating
BCY BCY BCY
70 71 72
Unit
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
Collector-Emitter Voltage
VCEO
40
45
25
Vdc
Collector-Base Voltage
VCBO
50
45
25
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
IC
0.2
Amp
mWatt
mW/oC
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
360
2.06
Total Device Dissipation @TC
TC
Derate above 25°C
= 25°C
= 100°C
PD
0.6
mWatt
4.0
-65 to +200
mW/oC
Operating and Storage Junction
Temperature Range
TJ, Tstg
°c
TRANSISTORS
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Thermal Resistance, Junction to Case
Refer to 2N3798 for graphs.
I
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2 mA, IB = 0)
Collector Base Leakage Current
(IE = 0, VCB = 50 V)
(IE = 0, VCB = 45 V)
(IE = 0, VCB = 25 V)
(IE
(IE
(IE
(IE
(IE
(IE
= 0, VCB
= 0, VCB
= 0, VCB
= 0, VCB
= 0, VCB
= 0, VCB
= 40 V, TAmb = 100°C)
= 40 V, TAmb = 100°C)
= 20 V, TAmb = 100°C)
= 40 V)
= 40 V)
= 20 V)
Vdc
V(BR)CEO
BCY70
BCY71
BCY72
40
45
25
ICBO
BCY70
BCY71
BCY72
0.5
0.5
0.5
BCY70
BCY71
BCY72
2
2
2
BCY70
BCY71
BCY72
10
50
50
Emitter Base Leakage Current
(VEB = 5 V, IC = 0)
(VEB = 4 V, IC = 0)
(VEB = 4 V, IC = 0, TAmb = 100°C)
lEBO
Collector Emitter Leakage Current
(VCE = 50 V, VBE = 3 V)
ICEX
0.5
10
2
~A
nA
~A
nA
~A
nA
20
BCY70
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 V, IC
HFE
IC
=
=
~A)
BCY71
40
100 fLA)
BCY70
BCY71
40
80
10
(VCE
= 1 V,
(VCE
=
1 V, IC
=
1 mAl
BCY70
BCY71
BCY72
45
90
40
(VCE
=
1 V, IC
= 10 mAl
BCY70
BCY71
BCY72
50
100
50
(VCE
= 1 V,
IC
= 50
BCY70
mAl
Base Emitter Saturation Voltage
(lc = 50 mA, IB = 5 mAl
(lc = 10 mA, IB = 1 mAl
600
15
VBE(sat)
BCY70/71
BCY70/71
V
0.6
Collector Emitter. Saturation Voltage
(lC = 50 mA, IB = 5 mAl
(lc = 10 mA, IB = 1 mAl
1.2
0.9
V
VCE(sat)
0.50
0.25
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-260
BCY70 thru BCY72
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
I
Characteristic
Symbol
I
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Transition Frequency
(lc = 10 rnA, f = 100 MHz, VCE = 20 V)
All types
(IC = 100 ~A, f = 10.7 MHz, VCE = 20 V) BCY71 only
tr
NOise Figure
NF
(VCE
=5
V, IC
= 100
Switching Times
(lc = lOrnA, IBl
h parameters
(VCE = 10 V, IC
~A,
=2
Rg
= 10 V,
IE
dB
KG, 30 to 15 kHz at - 3 dB POints)
BCY70172
BCY71
6
2
ns
= IB2 = 1
=
1 rnA, f
rnA)
=
1 kHz)
BCY70(72
BCY70172
BCY70172
BCY70(72
BCY70172
BCY70172
ton
toff
td
tr
ts
tf
BCY71
h12e
h21e
h22e
h11e
Common Base Output Capacitance
(VCB
MHz
250
15
= 0, f =
Input Capacitance
(VBE = 1 V, IC = 0, f
65
420
35
35
350
80
100
10
2
~s
KG
pF
Cob
6
1 MHz)
=1
20 X 10-'
400
60
12
pF
C,b
8
MHz
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-261
•
BCY78~VII,
-VIII, -IX, -X
BCY79-VII, -VIII, -IX, -X
MAXIMUM RATINGS
Symbol
BCY
78
BCY
79
Unit
Collector-Emitter Voltage
VCEO
32
45
Vdc
Collector-Emitter Voltage
(RBE = 10 Ohms)
VCES
32
45
Vdc
Emitter-Base Voltage
Rating
CASE 22-03, STYLE 1
:rO-18 (TO-206AAJ
VEBO
5
Vdc
Collector Current - Continuous
IC
0.2
Amp
Total Device Dissipation @TA.= 25°C·
Derate above 25°C
Po
0.6
2.28
Watt
mW/oC
Total Device Dissipation @TC = 25°C
TC = 100°C
Derate above 25°C
Po
1
Watt
6.67
mW/oC
TJ, T stg
-65 to +200
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
1f.
I
Thermal Resistance, Junction to Case
RIiJC
150
°C/W
Thermal Resistance, Junction to Ambient
ReJA
450
°C/W
~'-'
~
3(1
THERMAL CHARACTERISTICS
Characteristic
.!.
, Emitter
TRANSISTORS
PNPSILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I
I
Symbol
Min
BCY78 Series
BCY79 Series
V(BR)CEO
32
45
all
V(BR)EBO
Type
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mAde, IC = 0-)
Emitter-Base Breakdown Voltage
(IE = 2 I'Ade, IC = 0)
Collector
(VCE =
(VCE =
(VCE =
(VCE =
(VCE =
(VCE ~
Cutoff Current
32 V)
45 V)
32 V, T A = 100°C, VBE = 0.2 V)
45 V, TA = 100°C, VBE = 0.2 V)
25 V, TA = 150°)
35 V, TA = 150°)
Emitter Base Cutoff Current
(VEB = 4 V)
Vdc
Vdc
5
BCY78 Series
BCY79 Series
BCY78 Series
BCY79 Series
BCY78 Series
BCY79 Series
ICEX
all
lEBO
0.2
0.2
ICES
0.2
0.5
ICES
100
100
20
20
10
10
nA
I'Adc
I'Adc
nA
20
ON CHARACTERISTICS
DC Current Gain
(lc = 10 \lAde, VCE = 5 Vdc)
(IC = 2 mAde, VCE = 5 Vdcl
(lc = 10 mAde, VCE = 1 Vdc)
(lc = 100 mAde, VeE = 1 Vdc)
hFE
BCY79-VII, BCY7B-VII
BCY79-VIII, BCY7B-VIII
BCY79-IX, BCY7B-IX
BCY79-X, BCY7B-X
BCY79-VII, BCY7B-VII
BCY79-VIII, BCY7B-VIII
BCY79-IX, BCY7B-IX
BCY79-X, BCY7B-X
BCY79-VII, BCY78-VII
BCY79-VIII, BCY7B-VIII
BCY79-IX, BCY7B-IX
BCY79-X, BCY7B-X
BCY79-VII, BCY7B-VII
BCY79-VIII, BCY7B-VIII
BCY79-IX, BCY7B-IX
BCY79-X, BCY7B-X
Collector-Emitter Saturation Voltage
(lc = 100 mAde, IB = 2.5 mAde)
(lc = 10 mAde, IB = 0.25 mAl
all
Base-Emitter Saturation Voltage
(lc = 10 mA, IB = 0.25 rnA)
(lc = 100 rnA, IB = 2.5 rnA)
all
Base-Emitter on Voltage
(lc = 2 mAde, VCE = 5 Vdc)
30
40
100
120
lBO
250
3BO
BO
120
160
240
40
45
60
60
145
220
300
170
250
350
500
190
260
3BO
550
400
630
1000
0.15
0.05
0.30
0.12
O.BO
0.25
0.6
0.75
0.70
0.90
0.B5
1.2
0.60
0.62
0.75
220
310
460
630
Vdc
VCE(sat)
Vdc
VBE(sat)
Vde
VBE(on)
all
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-262
BCY78-VII, -VIII, -IX, -X, BCY79-VII, -VIII, -IX, -X
I
ELECTRICAL CHARACTERISTICS (continued) (TA
I
Characteristic
DYNAMIC CHARACTERISTICS
= 25°C unless otherwise noted.)
Type
Current Gain-Bandwidth Product
(IC = 10 mAde, VCE = 5 V, I = 100 MHz)
all
Output Capacitance
(VCE = 10 Vdc, IC
all
Input Capacitance
(VBE = 0.5 V, IC
Symbol
I
Min
Typ
180
300
Max
Unit
pF
Cob
all
3.5
7
8
15
pF
Cib
= 0, I = 1 MHz)
Small Signal Current Gain
(lc = 2 mAde, VCE = 5 Vdc, I
= 1 kHz)
BCY7B-VII, BCY79-VII
BCY78-VIII, BCY79-VIII
BCY7B-IX, BCY79-IX
BCY7B-X, BCY79-X
Input Impedance
(IC = 2 mAde, VCE
Vdc, I
= 1 kHz)
BCY7B-VII, BCY79-VII
BCY7B-VIII, BCY79-VIII
BCY7B-IX, BCY79-IX
BCY78-X, BCY79-X
Voltage Feedback Ratio
(Ic = 2 mAde, VCE = 5 Vdc, I
= 1 kHz)
BCY7B-VII, BCY79-VII
BCY7B-VIII, BCY79-VIII
BCY7B-IX, BCY79-IX
BCY78-X, BCY79-X
Noise Figure
(IC = 0.2 mAde, VCE = 5 Vdc,
RS = 2 Kohms, I = 1 kHz)
MHz
IT
= 0, I = 1 MHz)
=5
I
SMALL SIGNAL CHARACTERISTICS
hie
(h21e)
hie
(hlle)
200
260
330
520
Kohms
1.6
2.5
3.2
7.5
4.5
6
8.5
12
x 10- 4
h re
(h12e)
1.5
2
2
3
dB
NF
all
2
6
td
tr
ton
35
50
85
150
.. See test circuit.
ts
tl
toll
400
BO
4BO
BOO
IC = 100 mA, IBl = 10 mA, IB2 = 10 mA
VBB = 5 V, Rl = 500 Q, R2 = 700 Q
RL = 9B ohms
td
tr
ton
5
50
55
150
.. See test cirCUIt.
ts
tl
toft
250
200
450
BOO
SWITCHING CHARACTERISTICS
IC = 10 mA, IBl
VBB = 3.6 V, Rl
RL = 990 ohms
= 1 mA, IB2 = 1 mA
= R2 = 5 KQ
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-263
nS
nS
..
BCY78-VII, -VIII, -IX, -X, BCY79-VII, -VIII, -IX, -X
TEST CIRCUIT
-10V(VCC I
+VBB
Osz
I, < 5ns
V
I, < 5ns
Z6:: 100ko
500
<0,01
RJ =500
•
FIGURE 2 - CURRENT GAIN
(BCY78-VIIIIBCY79-VIIII
FIGURE 1 - CURRENT GAIN
(BCY78-VII/BCY79-VIII
1000
1000
100°C
-;5~
z
;;:
...'"~
-
1--
'" 10O
'"'-'
::>
I50°C
100°C
1"0_
-
t-
"
'"
~'"
'"'-'
1-
100
'-1'-"
~
~
:z:
VeE" I V
VCE" 1 V
0
10 0
10'
COLLECTOR CURRENT (mAl
10 0
10'
10'
1()2
10'
COLLECTOR CURRENT (mA'
FIGURE 4 - CURRENT GAIN
(BCY78-X/BCY79-XI
FIGURE 3 - CURRENT GAIN
(BCY78-IX/BCY79-IXI
1000
1000
100°C
100°C
I- 250C
-
.... -1-
.
I--
z
;;:
'"::>'-'
l"'"-
-SO°C
::>
:z:
~'"
2SoC
I--tI--
z
;;:
100
_r--
t--
.
z
;;:
'"...
'-.
~
'"
i:l
SO°C
100
-'
.-
2S °C
~o:re
........
......
""-
~
~
:z:
:z:
VeE" I V
10
10"'
VCE" I V
10
lit'
10.
10'
COLLECTOR CURRENT (mAl
10'
10 0
10'
COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-264
10'
BCY78-VII, -VIII, -IX, -X, BCY79-VII, -VIII, -IX, -X
FIGURE 6 - SATURATION VOLTAGE
FIGURE 5 - SATURATION VOLTAGE
o. 9
TA-25·C
o. B
0. 2
~
1/
~
r7
w
to
~
/
I
VCE (sa.IIc!IB • 40
25·C
II I
I
-55·C
V
100
~
VBE (..dlc!IB - 40
~
,;
o. 5
L.---"
T -I OO·C
./"
~
o. 4""'- ~
0
Ut'
-
o. 6
~
>
1/
lOO·C
V-
V
0. I
100
lit'
10'
10'
IIJZ
10'
IC. COLLECTOR CURRENT (mAl
IC. COLLECTOR CURRENT (mAl
FIGURE B - TOTAL PERMISSIBLE POWER
OISSIPATION (BCY1B/BCY19)
FIGURE 1 - INPUT CHARACTERISTIC
(COMMON EMITTER CIRCUIT)
IIJZ
I
...zwj
VeE - 5 V
IIJZ
-
U
.
........ Rth J cast
~ 0.1 5
DC
DC
:0
w
I - -1---
.......
1/
~ 10
1/
,
t-f-----
0.25
'"
r-- r--
~~
TEMPERATURE I·CI
FIGURE 10 - CAPACITANCES
-
10
Cib
1.0
".-
,/
VcE""ll\f
w
u
TA""'2IOC
5.0
TJ-250C- f-
.............
z
g
~
...... ~"
3.0
jo..
~
2.0
,.
200
100
FIGURE 9 - CURRENT GAIN
BANDWIDTH PRODUCT
...
...........
t-- t-- R.h lamb. ' "
0.9
VBE. BASE·EMITTER VOLTAGE (VOL TSI
• .2
f-----
0
O.B
0.1
06
..........
0.50
~
I()O
05
.........
j
20
..
I.0
0.4
'00
0.6 0.8 1.0
2.0
4.0
~
6_0 8.0 10
VR. REVERSE VOLTAGE {VOLTSI
IC. COLLECTOR CURRENT (mAde)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-265
ZO
3G
40
BF257
thru
BF259
MAXIMUM RATINGS
Symbol
Rating
BF
BF
BF
Unit
267 268 259
Collector-Emitter Voltage
VCEO
160 250 300
Vdc
Collector-Emitter Voltage
VCER
160 250 300
Vdc
Collector-Base Voltage
VCBO
160 250 300
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.1
Adc
Collector Current - Continuous
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Total Device Dissipation @TA
Derate above 25°C
= 25°C
Po
0.8
4.57
Watt
mW;oC
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
5.0
28.6
Watt
mW;oC
TJ,Tstg
-65to+200
°c
Operating and Storage Junction
Temperature Range
,f ~~'-'
2
1
, Emitter
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 30 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lc = 100 flAdc, IE = 0)
V(BR)CEO
160
250
300
BF257
BF25B
BF259
V(BR)CBO
BF257
BF258
BF259
Emitter-Base Breakdown Voltage
(IE = 100 flAdc, IC = 0)
Collector
(VCB =
(VCB =
(VCB =
Cutoll Current
100 Vdc, IE = 0)
200 Vdc, IE = 0)
250 Vdc, IE = 0)
V(BR)EBO
ICBO
BF257
BF25B
BF259
-
-
-
--
-
---
160
250
300
--
5.0
-
-
Vdc
Vdc
Vdc
nAdc
-
-
1
1
1
hFE
25
BO
-
-
VCE(sat)
-
0.1
1.0
Vdc
Current Gain Bandwidth Product
(lc = 30 mAde, VCE = 10 Vdc, I = 100 MHz)
IT
--
110
-
MHz
Reverse Transler Capacitance
(VCB = 30 Vdc, IE = 0, I = 500 kHz)
Cre '
-
3.5
-
pF
Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, I = 500 kHz)
Ccb
-
5.5
--
pF
-
50
50
50
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAde, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
(lc = 30 mAde, IB = 6.0 mAde)
DYNAMIC CHARACTERISTICS
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-266
BFW43
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CASE 22-03, STYLE t
TO-tS (TO-206AA)
Collector-Emitter Voltage
VCEO
150
Vdc
Collector-Base Voltage
VCBO
150
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
0.1
Adc
PD
0.4
2.66
mWrC
1.4
8.0
Watt
mWrC
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
=
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
/! ":~-
3 Collector
Watt
'"
°c
-65 to +200
THERMAL CHARACTERISTICS
HIGH VOLTAGE TRANSISTOR
Characteristic
I
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R8JC
125
°CIW
Thermal Resistance, Junction to Ambient
R8JA
438
°CIW
PNPSILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 2 mA, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 1 00 ~Adc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 ~Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 100 V, IE = 0)
ICBO
Collector-Emitter Cutoff Current
(VCB = 100 V, IB = 0) TA = 125°C
ICEO
Vdc
150
Vdc
150
Vdc
6
10
10
nA
~
ON CHARACTERISTICS(l)
DC Current Gain
(lc = 1 mA, VCE = 10 V)
(lc = 10 mA, VCE = 10 V)
(lc = 10 ~A, VCE = 10 V, TA
hFE
40
40
= -55°C)
30
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1 mAde)
VBE(sat)
Vqc
0.15
0.5
0.7
0.9
60
110
200
-
3.5
7
-
100
-
-
400
-
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mAde, VCE = 10 Vdc, I
Output Capacitance
(IE = 0, VCB = 20 Vdc, I
Turn On Time
(IBl = 10 mA, IC
IT
= 10 MHz)
Cobo
=
1 MHz)
ton
= 50
Turn Olf Time
(lB2 = 10 mAde. IC
mAde, VCC
= 100 Vdc)
toff
= 50
MHz
mAde. VCC
= 100 Vdc)
pF
(1) Pulse Test: Pulse Width'" 300 ~s. Duty Cycle'" 2%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-267
ns
ns
BFW43
FIGURE 2 - TURN-ON TIME
FIGURE 1 - CURRENT-GAIN-BANDWIDTH PRODUCT
1000
-;:; 500
"~
500
t;
::>
g
--
f
;=Q
100
~
z
;:!
0
I
Z
..'""
~
'"'"
B
~
r---- I,"
200
:g
r-.,
/'
w
50
"
10
10
10
50
10
10
10
50
10
50
'E. COLLECTOR CURRENT ImAI
•
Is
200
~
100
OVM-
-
" .........
50U
0
I0
50
10
10
100
2.2 kn
VOUI
+-.--.l20lWkn,......... SAMPLING SCOPE
O.II'-F
Vin 0-1 h~--+,f{
50U
If
10
50
IOI'-S
Vin
50
10
20
FIGURE 4 - SWITCHING TIME TEST CIRCUIT
DUTY CYCLE < 1%
I,. If < 5 ns
Vss VCC = 100 V
FIGURE 3 - TURN-OFF TIME
500
10
IC. COLLECTOR CURRENT ImAI
1000
!
VCEloffl = 100 V
Ielis = 5.0
lSI = IS2
TJ = 25"C
'"
20 /
10
10
"
i'--.."
;:: 100
TJ 25'C
VCE - 20V
f = 20 MHz
./
100
50
100
lion
Vin
-10.6V
110ft
-20V
VSS
/
+9.2 V
lC. COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-268
BFX38
BFX40
MAXIMUM RATINGS
Rating
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Symbol
BFX38
BFX40
Unit
Collector-Emitter Voltage
VCEO
55
75
Vdc
Collector-Base Voltage
VCBO
55
75
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.0
Adc
Total Device Dissipation Iji> TA = 25'C
Derate above 25'C
PD
1.25
7.15
Watt
mWf"C
Total Device Dissipation Iji> TC = 25'C
Derate above 25'C
PD
7.0
40
Watts
mWf"C
TJ, Tstg
-65 to +200
'c
Symbol
Max
Unit
HIGH CURRENT
TRANSISTORS
PNPSIUCON
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ROJC
20
'CIW
Thermal Resistance, Junction to Ambient
ROJA
140
'CIW
..
Refer to 2N4405 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
55
75
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = 10 mA)(l)
V(BR)CEO
BFX38
BFX40
Collector-Base Breakdown Voltage
(lc = 10 1lA)
V
V(BR)CBO
BFX38
BFX40
Emitter-Base Breakdown Voltage
(IE = 10 1lA)
V(BR)EBO
Collector Cutoff Current
(VCB = 40 V)
(VCB = 50 V)
(VCB = 40 V, TA = 125'C)
(VCB = 50 V, TA = 125'C)
ICBO
BFX38
BFX40
BFX38
BFX40
V
-
55
75
-
5.0
-
V
50
50
50
50
nA
-
IlA
ON CHARACTERISncS
Collector-Emitter Saturation Voltage
(lC = 150 mA, IB = 15 mA)(l)
(lC = 500 mA, IB = 50 mA)(l)
VCE(sat)
DC Current Gain
(lc = 100 1lA, VCE = 5.0 V)(l)
(lc = 100 mA, VCE = 5.0 V)(l)
(lc = 500 mA, VCE = 5.0 V)(l)
(lc = 1.0 A, VCE = 5.0 V)(1)
= 5.0 V, TA =
-
0.15
0.5
60
85
60
30
25
-
-
0.9
1.1
30
-
hFE
BFX38/40
BFX38/40
BFX38140
BFX38
BFX40
Emitter-Base Saturation Voltage
(lc = 150 mA, IB = 15 mA)(l)
(lc = 500 mA, IB = 50 mA)(l)
DC Current Gain
(lc = 100 mA, VCE
V
-
VBE(sat)
hFE
125'C)(1)
BFX38140
(1) Pulsed: Pulse Duration = 300 I'S, Duty Cycle = 1.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-269
-
-
V
-
BFX38, BFX40
I
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Charactaristic
SMALL SIGNAL CHARACTERISTICS
Bandwidth Product
Current Gain
(IC = 50 mA. VCE = 10 V. f = 100 MHz)
•
Symbol
Min
tr
100
Output Capacitance
(VCB = 10 V)
Cob
Input Capacitance
(VEB = 0.5 V)
Cib
Turn On Time
(IC = 500 mAo IBl = 50 mAl
ton
Turn Off Time
(lc = 500 mAo IBl = IB2 = 50 mAl
toff
Fall Time
(lc = 500 mAo IB1 = IB2= 50 mAl
tf
Max
Unit
MHz
pF
20
pF
120
ns
100
ns
350
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-270
ns
50
BFX48
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.1
Amp
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
0.36
2.06
Watt
mWfC
Total Device Dissipation @ TC
TC
Derate above 25°C
~
25°C
100°C
Po
1.2
0.686
6.86
mWrC
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
146
°CIW
Thermal Resistance. Junction to Ambient
R8JA
466
°CIW
~
Operating and Storage Junction
Temperature Range
CASE 22-03, STYLE 1
TO-18ITO-206AA)
Watt
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
I
PNPSILICON
Refer to 2N869A for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mA)(l)
V(BR)CEO
Collector-Base Breakdown Voltage
V(BR)CBO
V
30
(IC=10~A)
V
30
Emitter-Base Breakdown Voltage
(IE = 10 ~A)
V
V(BR)EBO
5
Collector Cutoff Current
(VCE = 20 V)
(VCE = 20 V. TA = 125°C)
ICES
15
15
nA
~A
ON CHARACTERISTICS
DC Current Gain
(lc = 1 a ~A, VCE = 1 V)
(lc = 1 00 ~A, VCE = 1 V)
(lc = 10 rnA, VCE = 1 V)
(IC = 50 rnA, VCE = 1 V)
(lc = 10 rnA. VCE = 1 V, TA = -55°C)
hFE
40
70
90
20
30
Collector-Emitter Saturation Voltage
(IC = 1 rnA, IB = 0.1 mAl
(IC = 10 rnA, IB = 1 mAl
(IC = 50 mA. IB = 5 mA)(1)
VCE(sat)
Emitter-Base Saturation Voltage
(IC = 1 rnA, IB ~ 0.1 rnA)
(lc ~ lOrnA, IB ~ 1 rnA)
(lc = 50 rnA, IB = 5 mA)(l)
VBE(sat)
V
0.13
0.14
0.3
V
0.75
0.9
1.1
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
(IC = 10 mA, VCE = 20 V, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 V)
Cob
Input Capacitance
(VEB = 0.5 V)
Cib
pF
3.5
pF
5.5
Noise Figure
(IC = 1 rnA. VCE = 20 V, f
Turn On Time
(Ie = 50 rnA, IBl
MHz
400
NF
~
100 MHz)
dB
6
ns
ton
~
5 rnA)
50
Turn Off Time
(lc = 50 rnA, IBl = IB2 = 5 rnA)
Collector-Base Time Constant
(lC ~ 10 rnA, VCE ~ 20 V, f ~ 80 MHz)
(1) Pulsed: Pulse Duration = 300
~s,
ns
toff
160
ps
rb'cc
40.
Duty Cycle = 1%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-271
•
BFX85
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
60
Vdc
Collector-Base Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current - Continuous
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
,iii
IC
1.0
Amp
PD
0.8
4.57
Watt
mWjOC
TJ, Tstg
-65 to +200
°c
~I[
~~'-'
,
Emitter
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
•
Characteristic
I
I Thermal Resistance, Junction to Case
l Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
RHJC
35
°CjW
RHJA
220
°CjW
NPN SILICON
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
I
I
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector· Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 ~dc, 18 = 0)
V(BR)CBO
Vdc
60
Vde
100
Collector Cutoff Current
(VCB = 80 Vde, IE = 0)
(VCB = 80 Vdc, IE = 0, TJ = 100°C)
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, T = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 5 Vde, IC = 0)
(VEB = 5 Vdc, IC = 0, TJ
(VEB = 6 Vdc, IC = 0)
lEBO
= 100°C)
50
2.5
500
2.5
nAde
[lAde
nAde
[lAde
50
2.5
500
nAdc
[lAdc
nAde
ON CHARACTERISTICS
DC Current Gain
(lc = 10 mAde, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vde)
(IC = 500 mAde, VCE = 10 Vdc)
(IC = 1.0 Ade, VCE = 10 Vdc)
hFE
50
70
30
15
Collector-Emitter Saturation Voltage
(lc
(IC
(IC
(IC
Vdc
VCE(sat)
= 10 mAde, IB = 1.0 mAde)
= 150 mAdc, IB = 15 mAdc)
= 500 mAde, IB = 50 mAdc)
= 1.0 Ade, IB = 100 mAde)
0.15
0.35
1.00
1.60
Base-Emitter SaturatIOn Voltage
(lc = 10 mAdc, IB = 1.0 mAdc)
(lc = 150 mAdc, IB = 15 mAdc)
(lc = 500 mAdc, IB = 50 mAde)
(IC = 1.0 Ade, (B = 100 mAdc)
Vde
VBE(sat)
1.2
1.3
1.5
2.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-272
BFX85
ELECTRICAL CHARACTERISTICS (continued) (T A
I
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMAll SIGNAL CHARACTERISTICS
IT
Current Gain Bandwidth Product
(IC = 50 mAde, VCE = 10 Vdc, I = 35 MHz)
Collector Capacitance
(VCB = 10 Vdc, IE = 0, I = 1 MHz)
pF
Cabo
12
Small Signal Current Gain
(IC = 1 mAde, VCE = 5.0 Vdc, I = 1.0 kHz)
(IC = 10 mAdc, VCE = 5.0 Vdc, I = 1.0 kHz)
hie
Input Impedance
(IC = 10 mAde, VCE
hie
=
MHz
50
20
25
5 Vdc, I = 1 kHz)
Q
750
Voltage Feedback Ratio
(lc = 10 mAde, VCE = 5 Vdc, I = 1 kHz)
h re
Output Admittance
(lc = 10 mAde, VCE = 5 Vdc, I = 1 kHz)
hoe
5.0
80
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-273
x 10
4
~mhos
..
8FY50
thru
8FY52
MAXIMUM RATINGS
Rating
Symbol
BFY BFY BFY>
50 51 52
Unit
Collector-Emitter Voltage
VCEO
35
30
20
Vdc
Collector-Base Voltage
VCBO
80
60
40
Vdc
Emitter-Base Voltage
VEBO
6
Vdc
Collector Current - Continuous
IC
1
Adc
Total Device DissipatIOn @TA = 25°C
Derate above 25°C
Po
0.8
4.6
Watt
mW/oC
Total Device Dissipation @lTe
Derate above 25°C
Po
5
28.6
Watt
mW;oC
TJ, T stg
-65 to +200
°c
=
25°C
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
~~'-'
"
2
•
Characteristic
l Thermal Resistance, Junction to Case
I Thermal ReSistance, Junction to Ambient
Symbol
Max
Unit
RHJC
16.5
°C/W
RIIJA
89.5
°C/W
, Emitter
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
I
1
NPN SILICON
Refer to 2N3019 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I Symbol I
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 rnA)
Collector-Base Breakdown Voltage
(IC = 10 ~A)
V
V(BR)CEO
BFY50
BFY51
BFY52
35
30
20
V
V(BR)CBO
BFY50
BFY51
BFY52
80
60
40
Emitter-Base Breakdown Voltage
(IE = 10 ~A)
V
V(BR)EBO
6
Collector Cutoff Current
(VCB = 60 V)
(VCB = 40 V)
(VCB = 30 V)
BFY50
BFY51
BFY52
Collector Cutoff Current
(VCB = 60 V, T J = 100°G)
(VCB = 40 V, Tj = 100°C)
(VCB = 30 V, T· = 100°G)
BFY50
BFY51
BFY52
nA
ICBO
50
~A
ICBO
2.5
Emitter Cutoff Current
(VEB = 5 V)
(VEB = 5 V, T· = 100°C)
lEBO
50
2.8
nA
~A
ON CHARACTERISTICS
DC Current Gain
(IC = lOrnA, VCE
=6
hFE
V)
(lc
= 150 rnA, VCE = 6
(lc
=
1 A, VCE
=6
V)
=
1 A. IB
=
20
30
BFY50
BFY51
BFY52
30
40
60
15
V)
Collector-Emitter Saturation Voltage
(IC = 150 rnA, IB = 15 mA(l)
(IC
BFY50
BFY51-52
100 mA(l)
V
VCE(sat)
BFY50
BFY51-52
0.2
0.35
BFY50
BFY51-52
1
1.6
Emitter-Base Saturation Voltage
(lc ~1 A.IB = 100 mA(l)
V
VBE(sat)
2
(1) Pulsed: Pulse Duration = 300 1'5, Duty Cycle =1%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-274
BFY50 thru BFY52
I
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25°C unless otherwise noted.)
I Symbol I
Characteristic
Min
Max
Unit
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
(lC ~ 1 rnA. VCE ~ 6 V. I
hie
~
1 kHz)
10
30
BFY50
BFY51-52
Output Capacitance
(VCB ~ 12 V. I ~ 500 kHz)
Current Gain Bandwidth Product
(IC ~ 50 rnA. VCE ~ 6 V. I ~ 20 MHz)
pF
Cob
12
MHz
IT
BFY50
BFY51-52
60
50
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-275
BSSSO
thru
BSSS2
MAXIMUM RATINGS
Symbol
Rating
BSS BSS ass
50 51 52
Unit
VCEO
45
60
80
Vdc
Collector-Emitter Voltage
VCER
45
60
80
Vdc
Collector-Base Voltage
VCBO
60
80 100
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector-Emitter Voltage
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Collector 3
Collector Current - Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
0.8
5.3
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
5
28.6
Watt
mW;oC
TJ, T stg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
Emitter 1
THERMAL CHARACTERISTICS
•
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
I
I
I
Symbol
I
RHJC
RHJA
I
I
I
Max
Unit
35
°C/W
220
°C/W
DARLINGTON
TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Cutoff Current
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
nA
ICBO
BSS50
BSS51
BSS52
50
50
50
Emitter-Cutoff Current
(VEB = 4 V, IC = 0)
nA
lEBO
50
Collector-Emitter Breakdown Voltage
(lc = lOrnA, IB = 0)
V
V(BR)CEO
45
60
80
BSS50
BSS51
BSS52
Emitter-Base Breakdown Voltage
(lB= lOO f'A,IC=O)
V
V(BR)EBO
5
ON CHARACTERISTICS
DC Current Gain (1)
(lc = 150 rnA, VCE = 10 V)
(IC = 500 rnA, VCE = 10 V)
hFE
Base-Emitter Voltage(l)
(lc = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
VBE(on)
1500
2000
V
1.4
1.5
1.55
1.65
V
Saturation Voltage(1)
(lc = 500 mA, IB = 0.5 rnA)
(IC = 500 mA, IB = 0.5 rnA)
(IC = 1 A, IB = 1 mAl
(IC = 1 A, IB = 1 rnA)
(IC = 1 A, IB = 4 mAl
(lc = 1 A, IB = 4 mAl
1.3
VCE(sat)
VBE(sat)
VCE(sat)
VBE(sat)
VCE(sat)
VBEisati
BSS51
BSS51
BSS50-52
BSS50-52
1.9
1.6
2.2
1.6
2.2
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 500 rnA, VCE = 5, f = 20 MHz)
fT
Output Capacitance
(VCB = 10 V, IE = 0, f = 1 MHz)
Cob
Turn On Time (lC = 500 rnA, IB 1 = -IB2 = 0.5 rnA)
Turn Off Time (lc = 500 rnA, IB 1 = -IB2 = 0.5 rnA)
ton
toff
(1) Pulse Test: Pulse Width = 300
~s,
MHz
70
pF
11
400
1500
Duty Cycle = 2%, unless otherwise specified.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-276
25
ns
BSS50 thru BSS52
FIGURE 1 - CURRENT GAIN versus COLLECTOR CURRENT
hFE
10
,
10
.
I-VCE 10V
TA- 1500 C
f...-TA 25 DC
10
,
10
,
~
10 '
~:;:-S50C
..........
~
Ie inA
10 - 1
10
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-277
..
BSS71
thru
BSS73
MAXIMUM RATINGS
Symbol
Rating
8SS 8SS 8SS
71
Unit
CASE 22·03, STYLE 1
TO·18 (TO·206AA)
73
VCEO
200 250 300
Vde
VCBO
200 250 300
Vde
VEBO
6.0
Vde
Collector Current - Continuous
IC
0.5
Ade
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
0.5
2.86
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
Po
2.5
14.3
Watt
mW/oC
TJ, Tstg
-65 to +200
°c
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Operating and Storage Junction
Temperature Range
•
72
! .:()'-
3
2
1 Emitter
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Case
I
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC = lOrnA, IB = 0)
Collector-Base Breakdown Voltage
(IC= 100 !lAde, IE = 0)
BSS71
BSS72
BSS73
-
200
250
300
--
BSS71
BSS72
BSS73
ICBO
BSS71
BSS72
BSS73
Collector-Emitter Cutoff Current
(VCE = 150 V, IB = 0)
(VCE = 200 V, IB = 0)
(VCE = 300 V, IB = 0)
BSS71
BSS72
BSS73
lEBO
ALL
-
--
-
Vde
-
6
6
-
-
-
--
6
--
-
-
50
50
50
nA
-
--
-
-
---
-
--
500
500
500
-
-
50
20
30
50
40
40
45
120
140
35
-
ICEO
--
-
Vde
V(BR)EBO
Cutoff Current
150 V, IE = 0)
200 V, IE = 0)
250 V, IE = 0)
Emitter-Cutoff Current
(VBE = 5 Vde, Ie = 0)
200
250
300
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 !lAde, IC = 0)
Collector
(VCB =
(VCB =
(VCB =
Vde
V(BR)CEO
BSS71
BSS72
BSS73
nA
nA
ON CHARACTERISTICS(l)
DC Current Gain
(IC = 0.1 mA, VCE = 1 V)
(IC = 1 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
Ilc = 30 mA, VCE = 10 V)
(lc= 100mA,VCE= 10V)
Collector-Emitter Saturation Voltage
Ilc = 10 mAde, IB = 1 mAde)
(lC = 30 mAde, IB = 3 mAde)
(IC = 50 mAde, IB = 5 mAde)
(lC = 100 mAde, IB = 20 mAde)
hFE
BSS71
ALL
ALL
ALL
BSS73
--
VCE(sat)
ALL
ALL
ALL
BSS73
Base-Emitter Saturation Voltage
Ilc = 10 mAde, IB = 1 mAde)
(lc = 30 mAde, IB = 3 mAde)
(lC = 50 mAde, IB = 5 mAde)
(lC = 100 mAde, IB = 10 mAde)
ALL
ALL
ALL
BSS73
-
0.15
0.25
0.35
0.25
0.3
0.4
0.5
0.7
0.8
0.85
0.9
0.8
0.9
1.0
-
--
Vde
-
--
(11 Pulse Test: Pulse Width", 300 "s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-278
250
Vde
-
--VBE(sat)
--
aSS71 thru aSS73
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
I
Charactaristic
Symbol
I
Min
Typ
Max
50
70
200
-
3.5
-
-
45
-
-
100
-
-
400
-
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 20 mAde, VCE = 20 Vdc, f
Output Capacitance
(IE = 0, VCB = 20 Vdc, f
= 1 MHz)
Input Capacitance
(lc = 0, VEB = 0.5 Vdc, f
=
Turn On Time
(lBl = 10 rnA, IC
= 50
Turn Off Time
(lB2 = 10 mAde, IC
MHz)
Cob
Cib
1 MHz)
mAde, VCC
= 50
MHz
ft
= 20
mAde, VCC
toff
= 100 Vdc)
FIGURE 1 - DC CURRENT GAIN
pF
ns
ton
= 100 Vdc)
pF
ns
FIGURE 2 - CAPACITANCES
100
10
TJ
--
50
VCE = 10 V
z
;;'
'">-
~
30
200
150
.
100
.-/"
f/
w
u
z
~
~
w
"":
+25 DC
55 DC
u
0
~ 20
TJ=+12SoC
50
20
10
~ 70
~
v---
-
-
Cell
5.0
..; 3.0
2.0
10
01
0.5
10
5.0
10
20
50
0.2
0.5
1.0
o
~
30
z
;;;:
20
;;;
50
.....
.s>-
"""
./
./
TJ = 25 DC
VCE = 20 V
f
~
\
'"
'"~
1\
"" 20MHz
200
I
,
.....
2.5 WATT THERMAL .....
10o::: LIMITATION
TC - 25 DC
200
0
~
'"
..........
~
0
10
10
20
30
50
10.
20
30
50
50
30
100
IC COLLECTOR CURRENT (mA)
BSSI1 3E
BSSI2=
BSSI3 = Fo50
10
2030
50
100
VCE. COLLECTOR EMITTER VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-279
...... 00"'
J~
de'r-.
'">-
~
100
'J .....
l"l
;(
o
I
20
50 0
........
.......
10
>-
5010
FIGURE 4 - ACTlVE·REGION SAFE
OPERATING AREA
;; 100
~
!)O
2.0
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 3 - CURRENT·GAIN - BANDWIDTH PRODUCT
~
-
1.0
100
lC. COLLECTOR CURRENT (mA)
~
25 DC'=
C,b
200
300
•
BSS71 thru BSS73
FIGURE 6 - TEMPERATURE COEFFICIENTS
FIGURE 5 - "ON" VOLTAGES
14
12
~
I
I
_
I
~
~
~
g
TJ = 25°C
j
I
10
~ 0.08
2.5
--
I
-
IdlB - 10
VBE(sSI)
1.5
~
ll'i
1.0
~
0.5 -
u
~
=>
~
0.04
0.02
VCE(sal)
o
2.0
1.0
3.0
IdlB
5.0
10
I
10
20
--
~
::0
IC/IB
i"
5
100
50
fiVc for VCE(sal)
......
5rC10 ~5°C
-1.0
-2.5 1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (rnA)
VCE(off) 100 V
5.0
IdlB
= 25°C
TJ
50
70
100
"
""
"'.Id
Ir ""\.
g
i'--
..... ......
10-
200
:ii]
:; 100
" f'. ......-
20
2.0
Is
,
500
5.0
10
r50
20
100V
5.0
IB2
25°C
[
10
1.0
100
r-..
r
--,--
===VCE(off)
50 - l d l B
-IBI
-TJ
=
20
50
10
1.0
30
k
1.0K
500
~ 100
\
FIGURE 8 - TURN·OFF TIME
FIGURE 7 - TURN ON TIME
w
'"
- 55°C 10 125°C
°VBforVBE
I II
-2.0
1.0K
~200
V
"-- r-
-0.5
IC, COLLECTOR CURRENT (rnA)
•
,
~5°C 101,25°t /
I=! -1.5 -
,/
30
10
=
IB
0
10V
VCE
VBE(on)
0.06
.... -
!c
2.0
..s
5.0
2.0
IC, COLLECTOR CURRENT (rnA)
10
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
Duty Cycle
< 1%
Ir' tf < 5 ns
Yin
r,;;-:J
VBB Vee = 100 V
ov~.L
1
2.2 kn
1 kn
O.lI'oF 1 kn
,
VBB
Sampling
Scope
son
50n
VIN
Vout
20 kn
Yin ---1 H~NN-+!-[
I ton
I toft
20
IC, COLLECTOR CURRENT (rnA)
,
10.6 V
20 V
-9.2 V
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-280
50
100
BSS74
thru
BSS76
MAXIMUM RATINGS
Rating
Symbol
BSS BSS BSS
74
75
Unit
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
76
Collector-Emitter Voltage
VCEO
200 250 300
Vdc
Collector-Base Voltage
VCBO
200 250 300
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
0.5
Adc
25°C
PD
0.5
2.86
Watt
mW/oC
Total Device Dissipation @TC = 25°C
Derate above 25°C
PD
2.5
14.3
Watt
mW/oC
TJ, Tstg
-65to+200
°c
Collector Current - Continuous
Total Device DIssipation @ TA
Derate above 25°C
~
Operating and Storage Junction
Temperature Range
/I ~()'~'
3 2
1
'
Emitter
HIGH VOLTAGE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
PNPSILICON
Thermal Resistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Cheracteristic
Symbol
Min
Typ
Max
200
250
300
---
-
200
250
300
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = lOrnA, IB ~ 0)
Collector-Base Breakdown Voltage
(lc = 100 I'Adc, IE ~ 0)
Emitter-Base Breakdown Voltage
(IE ~ 100 I'Adc, IC = 0)
Collector Cutoff Current
(VCB = 150 V, IE = 0)
(VCB ~ 200 V, IE ~ 0)
(VCB ~ 250 V, IE = 0)
V(BR)CEO
BSS74
BSS75
BSS76
-
V(BR)CBO
BSS74
BSS75
BSS76
-
BSS74
BSS75
BSS76
ICBO
BSS74
BSS75
BSS76
Collector-Emitter Cutoff Current
(VCE = 150 V, IB ~ 0)
(VCE ~ 200 V, IB ~ 0)
(VCE = 300 V, IB ~ 0)
BSS74
BSS75
BSS76
Emitter-Cutoff Current
(VBE = 5 Vdc, Ie = 0)
ALL
ICEO
lEBO
--
--
--
6
6
6
-
-
----
-
V(BR)EBO
Vdc
Vdc
Vdc
-nA
-
--
50
50
50
nA
--
-
---
500
500
500
-
-
50
20
30
35
35
--
40
45
50
55
40
--
nA
ON CHARACTERISTICS(1}
DC Current Gain
(lC=O.l mA,VCE= 1 V)
(lc = 1 mA, VCE ~ 10 V)
(IC = 10 rnA, VCE ~ 10 V}
(lc = 30 mA, VCE = 10 V)
(IC = 100 rnA, VCE ~ 10 V}
Collector-Emitter Saturation Voltage
(IC = 10 mAde, IB ~ 1 mAde}
(lc = 30 mAde, IB ~ 3 mAde}
(IC = 50 mAde, IB ~ 5 mAde}
(IC ~ 100 mAde, IB = 20 mAde}
Base-Emitter Saturation Voltage
(IC = 10 mAde, IB = 1 mAde)
(lc ~ 30 mAde, IB ~ 3 mAde)
(lc = 50 mAde, IB ~ 5 mAde)
(IC = 100 mAde, IB = 10 mAde)
hFE
BSS74
ALL
ALL
ALL
BSS76
VCE(sat}
ALL
ALL
ALL
BSS76
-
--
-VBE(sat}
ALL
ALL
ALL
BSS76
-
-150
-
Vdc
0.15
0.25
0.35
0.40
0.3
0.4
0.5
0.7
0.8
0.85
0.9
0.8
0.9
1.0
Vdc
(1) Pulse Test: Pulse Width" 300 p.s, Duty Cycle" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-281
-
-
-
BSS74 thru BSS76
I
ELECTRICAL CHARACTERISTICS (continued) ITA
= 25"C unless otherwIse noted.)
I
Characteristic
I
Symbol
Min
Typ
Max
50
110
200
--
3.5
-
-
45
-
-
100
-
-
400
-
Unit
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth product
IIc = 20 mAde. VCE = 20 Vdc. 1= 20 MHz)
Output Capacitance
liE =
VeB = 20 Vdc. I = 1 MHz)
Cob
Input Capacitance
IIc = O. VEB = 0.5 Vdc. I = 1 MHz)
Cib
o.
Turn On Time
IIBI = 10 mA. IC
= 50
mAde. VCC
=
Turn Off Time
IIB2 = 10 mAde. IC = 50 mAde. VCC
•
MHz
It
pF
ton
100 Vdc)
=
toft
100 Vdc)
FIGURE 1 - DC CURRENT GAIN
pF
ns
ns
FIGURE 2 - CAPACITANCES
100
Cob
10
TJ=250 C
50
z
<1
30
'" 200
VCE = 10V
5
~ 10
a 0
....
u
Z
~
55
.......
10
U 1.0
+25 DC
0
!-.
~ 20
TJ = +125 DC
U
Q
oJ
~
5.0
u'
3.0
0
Ccb.
-
2.0
10
0.1
0.5
1.0
5.0
10
20
50
1.0
100
0.2
0.5
1.0
lC. COLLECTOR CURRENT ImAI
2.0
5.0
10
20
50
FIGURE 3 - "ON" VOLTAGES
G
2.0
>
1.5
I
IC = 10
la
~
TJ = 25 DC
IV
,g
1.
~
~
0
~
25 0 C '0 125 0 C
1.0
QVC to, VCEI ..,I
U
Q
....
'"
~
0. 8
r-
§
VaElsa.) (" lcJla - 10
0. 6
o. 2 -
VaElon) (" VCE - 10 V
2.0
3.0
5.0
1
I
....
I
I I
I J
VCEI .. ,) (" IcJla = 10
~ -1.0
I
~
10
20
30
50
-550 C '0 1250 C
~ -1. 5 -
....
i
100
L J..-+-t'
OVB tor VaE
J
I
-2.0
-2.5
IC. COLLECTOR CURRENT ImA)
1.0
2.0
3.0
5.0 1.0 10
20
30
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-282
'J
~
-550 C '0 25 0
§ -0.5
0
1.0
0.5
8
Q
>
>' O. 4
200
FIGURE 4 - TEMPERATURE COEFFICIENTS
2.5
1. 2
100
VR. REVERSE VOLTAGE IVOLTS)
1.4
~
=
50
10
100
BSS74 thru BSS76
FIGURE 5 - CURRENT·GAIN-BANDWIDTH PRODUCT
-;:;
::z:
;!
FIGURE 6 - TURN·ON TIME
1000
~oo
t:::>
500
~ 200
b
100
iii
c
z
~
.'"
0
I
z
1--';"'- "'-
-
::z:
200
:0:i=
100
t'-
TJ = 25 oc
VCE = 20 V
f
= 20 MHz
L
.....-
VCEloffl
IC/IS
lSI
TJ
"-
!
= 100 V
= 5.0
= IB2
= 25 oC
0
'd " '
5 2oV
0
~
:::>
'"'
,t:
10
1.0
2.0
10
50
20
10
1.0
50
20
50
IC. COLLECTOR CURRENT (mAl
10
20
50
100
IC, COLLECTOR CURRENT ImAI
FIGURE B - SWITCHING TIME TEST CIRCUIT
FIGURE 7 - TURN·OFF TIME
1000
"']
!...
Duty Cyel.
t"tf°C unless otherwise noted.)
I
I Symbol I
Characteristic
Min
Max
Unit
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 50 rnA, VCE = 10 V, I = 20 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, I
Turn On Time (Fig. 1) (lc
Storage Time (Fig. 1) (lc
Fall Time (Fig. 1)
(lc = 100 rnA, IBI
50
=
pF
Cob
= 1 MHz)
Small Signal Current Gam
(lC = 1 rnA, VCE = 5 V, I
MHz
IT
25
hIe
20
1 MHz)
= 100 rnA,
= 100 rnA,
= IB2 = 5
IBI = IB2 = 5 rnA)
IB 1 = IB2 = 5 rnA)
ton
ts
500
500
ns
tl
150
rnA)
FIGURE 1 - SWITCHING TIME CIRCUIT
+5V(VBB)
-20V(VCC)
200n
10,.,sec
~.
U
-IIV
tr < 15nsec
t 1< 15nsec
R J =50n
ns
lko
o-----4r"'""M'--+--\
50n
BAY63
Osz
t r < 15nsec
Z6~ 100kn
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-287
•
BSW67A
BSW68A
MAXIMUM RATINGS
Symbol BSW67A BSW68A
Unit
VCEO
120
150
Vdc
Collector-Base Voltage
VCBO
120
150
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
2.0
Amp
Rating
Collector-Emitter Voltage
Collector Current -
Continuous
Total Device Dissipation @ TA
Derate above 25·C
~
25·C
Po
0.8
4.57
Watt
mWrC
Total Device Dissipation @ TC
Derate above 25·C
~
25·C
Po
5.0
28.6
Watts
mwrc
TJ, Tstg
-65 to +200
·C
Operating and Storage Junction
Temperature Range
CASE 79-04. STYLE 1
TO-39 (TO-205AD)
THERMAL CHARACTERISTICS
•
TRANSISTORS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
ROJC
35
·CIW
Thermal Resistance, Junction to Ambient
ROJA
220
·CIW
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA ~ 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC ~ 10 mAde, IB ~ 0)
Collector-Base Breakdown Voltage
(lC ~ 100 /LAde)
Collector-Base Cutoff Current
(VCB ~ 60 V, IE ~ 0)
(VCS ~ 75 V, IE ~ 0)
(VCS ~ 60 V, IE ~ 0, TJ ~ 150·C)
(VCS ~ 75 V, IE ~ 0, TJ ~ 150·C)
Vdc
V(BR)CEO
BSW67A
BSW68A
120
150
-
120
150
-
-
100
100
100
100
Vdc
V(BR)CBO
BSW67A
BSW68A
ICBO
BSW67A
SSW68A
BSW67A
SSW68A
Emitter-Sase Cutoff Current
(VEB ~ 3.0 V, IC ~ 0)
(VES ~ 6.0 V, IC ~ 0)
-
IESO
nAdc
-
100
100
30
40
30
15
-
-
JLAdc
nAdc
JLAdc
ON CHARACTERISTICS
DC Current Gain
(lC ~ 10 mA. VCE ~ 5.0 V)
(lc ~ 100 mA, VCE ~ 5.0 V)
(lc ~ 500 mA. VCE ~ 5.0 V)
(lc ~ 1.0 A, VCE ~ 5.0 V)
hFE
Collector-Emitter Saturation Voltage
(lc ~ 100 mA, IS ~ 10 mAl
(lC ~ 500 mA, IS ~ 50 mAl
(lC ~ 1.0 A, IS ~ 150 mAl
VCE(sat)
Emitter-Sase Saturation Voltage
(lc ~ 100 mA, IS ~ 10 mAl
(lc ~ 500 mA, IS ~ 50 mAl
(lC ~ 1.0 A. IB ~ 150 mAl
VBE(sat)
-
-
Vdc
-
-
0.15
0.4
1.0
-
0.9
1.1
1.4
tr
50
-
MHz
Output Capacitance
(VCS ~ 10 V, IE ~ 0, f ~ 1.0 MHz)
Cobo
-
20
pF
Input Capacitance
(VEB ~ 0, IC ~ 0, f ~ 1.0 MHz)
Cibo
-
300
pF
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Sandwidth Product
(lC ~ 100 mA, VCE ~ 20 V, f ~ 35 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-288
BSX20
MAXIMUM RATINGS
Rating
Symbol
Value
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Emitter Voltage
(RBE = 10 Ohms)
VCER
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
500
mAmp
Po
360
2.06
mWatt
mW/oC
Po
1.2
Watt
6.85
mW/oC
TJ, T stg
-65 to +200
°c
Collector Current - Continuous
Total DeVice Dissipation @TA
Derate above 25°C
= 25°C
Total DeVice Dissipation @TC = 25°C
TC = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CASE 22-03. STYLE 1
TO-18 (TO-206AA)
Unit
!
3
2
.:.~"' EmItter
1
TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal ReSistance, Junction to Case
I
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
I Symbol I
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IIc = 10 mAde, IB = 0)
(IC = 10 mAde, RBE = 100)
V(BR)CEO
Emitter-Base Breakdown Voltage
(IE = 10 I'Ade, IC = 0)
V(BR)EBO
V(BR1CER
Vdc
15
20
Vde
4.5
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 20 Vde, IE = 0, T = 150°C)
ICBO
Collector Cutoff Current
(VCE = 15 Vde, VBE = 0, T J
(VCE = 40 Vde, VBE = 0)
ICES
400
30
= 55°C)
nAde
I'Ade
I'Ade
0.4
1.0
Cutoff Current
(VCE = 15 Vde, VBE = - 3 V, TJ = 55°C)
I'Ade
0.6
0.6
ICEX
IBEX
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAde, VCE = 1 Vde)
(IC = 10 mAde, VCE = 1 Vde, Tj
IIc = 100 mAde, VCE = 2 Vde)
hFE
=-
40
20
10
55°C)
Base-Emitter On Voltage
(IC = 30 I'Ade, VCE = 20 Vde, T = 100°C)
VBE(on)
Emitter-Collector Saturation Voltage
IIc = 10 mAde, IB = 0.3 mAde)
(IC = 10 mAde, IB = 1 mAde)
(lc = 100 mAde, 18 = 10 mAde)
VCE(sat)
Emitter-Base Saturation Voltage
(IC = 10 mAde, IB = 1 mAde)
(lc = 100 mAde, IB = 10 mAde)
VBE(sat)
120
Vde
0.35
Vde
0.3
0.25
0.60
Vde
0.7
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-289
0.85
1.50
•
BSX20
I
ELECTRICAL CHARACTERISTICS
(continued) (T A
= 25°C
unless otherwise noted.)
Characteristic
SMALL SIGNAL CHARACTERISTICS
= 1 MHz)
Input Capacitance
(VES = 1 V, IC = 0, f
= 1 MHz)
Time
(lc
•
Symbol
IT
Current Gain Sandwidth Product
(lc = 10 mA. VCE = 10 V)
Output Capacitance
(VCS = 5 V, IE = 0, f
I
Min
Max
Unit
MHz
500
pF
Cobo
4
pF
Cibo
4.5
ns
ts
= 10 mA.IS1 = IS2 = 10 rnA)
13
Turn·On Time
(IC = 10 mA.IS1 = 3 rnA)
(lc = 100 rnA. IS1 = 40 rnA)
ton
Turn·Off Time
(IC = 10 rnA, IS1 = 3 rnA, IS2 = -1.5 mAl
(lc = 100 rnA. IS1 = 40 rnA, IS2 = - 20 rnA)
toff
ns
12
7
ns
1S
21
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-290
85X29
CASE 22-03, STYLE 1
TO-1S (TO-206AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vdc
Collector-Base Voltage
VCBO
12
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current - Continuous
IC
200
Amp
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
PD
2.06
.36
Watt
mW/oC
Total Device Dissipation @ T C
TC
Derate above 25°C
= 25°C
= 100°C
PD
1.2
0.686
6.B6
mW/oC
-65 to +200
°c
Operating and Storage Junction
Temperature Range
TJ, T stg
Watt
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
RYJC
I
I
Thermal ReSistance, Junction to Ambient
RaJA
I
Characteristic
Symbol
Max
146
I
I
°C/W
I
I
486
1
°C/W
J
Unit
PNPSILICON
Refer to 2N869A for graphs.
I
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
Characteristic
I Symbol I
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mA)(1)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC = 10 IJA)
V(BR)CES
Collector-Base Breakdown Voltage
(IC = 10 ~A)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 ~A)
V(BR)EBO
Collector Cutoff Current
(VCE = 6 V, VBE = 0)
(VCE = 6 V, VBE = 0, TA
V
12
V
12
V
12
V
4
ICES
BO
5
= 85°C)
nA
~A
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(IC = 10 rnA, IB = 1 rnA)
(IC = 30 rnA, IS = 3 rnA)
(lc = 100 rnA, IS = 10 rnA)
VCE(sat)
Emitter-Base Saturation Voltage
(lc = 10 rnA, IB = 1 rnA)
(lc = 30 rnA, IB = 3 rnA)
(lc = 100 rnA, IB = 10 rnA)
VBE(sat)
V
0.78
0.85
DC Current Gam
(IC
(IC
(lc
V
0.15
0.2
0.5
0.98
1.2
1.7
hFE
= 10 rnA, VCE = 0.3 V)(1)
= 30 rnA, VCE = 0.5 V)(1)
= 100 rnA, VCE = 1 V)(1)
25
30
20
Collector-Emitter Saturation Voltage
(IC = 30 rnA, IB = 3 rnA, TA = 85°C)
120
V
VCE(sat)
0.4
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
(lc = 30 rnA, VCE = 10 V, f
=
hfe
100 MHz)
4
Output Capacitance
(VCB = 5 V)
Cob
Input Capacitance
(VEB = 0.5 V)
Cib
Turn On Time
(lc = 30 rnA, IS1
pF
6
=
ns
ton
1.5 rnA)
60
Turn Off Time
(lc = 30 rnA, IB1
• Pulsed:
pF
6
ns
toff
= IB2 = 1.5 rnA)
Pulse Duration = 300 ~s, Duty Cycle = 1%.
90
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-291
•
BSX32
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
65
Vdc
Emitter-Base Voltage
VEBO
6
Vdc
IC
1
Adc
Rating
Collector Current - Continuous
•
Total Device Dissipation @ TA
Derate above 25°C
= 25°C
Po
O.B
4.6
Watt
mW/oC
SWITCHING TRANSISTOR
Total Device Dissipation @TC
Derate above 25°C
= 25°C
Po
3.5
2.0
Watt
mW/oC
NPN SILICON
TJ, Tstg
-65 to +200
°c
Operating and Storage Junction
Temperature Range
Refer to 2N3725 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I Symbol I
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 10 mA, IB = 0)(1)
V(BR)CEO
Collector-Base Breakdown Voltage
(lc = 100 flA, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 100 ~A, IC = 0)
V(BR)EBO
Collector Cutoff Current (VCB
= 50 V,
V
40
V
65
V
6
IE
= 0)
4
ICBO
flA
ON CHARACTERISTICS
DC Current Gain
(VCE = 1 V, IC
(VCE = 1 V, IC
(VCE = 1 V, IC
(VCE = 5 V, IC
(VCE = 1 V, IC
(VCE = 1 V, IC
hFE
= 10 mA)(1)
= 100 mA)(1)
= 500 mAl (1)
= 1 A)(1)
= 100 mA, TA = -55°C)(1)
= 500 mA)(1)
30
60
25
20
30
15
Collector-Emitter Saturation Voltage
(lc = 100 mA,lB = 10 mA)(1)
(lc = 500 mA, IB = 50 mA)(1)
(lc = 1 A,IB = 100 mA)(1)
VCE(sat)
Base-Emitter Saturation Voltage
(lc = 100 mA, IB = 10 mA)(1)
(lc = 500 mA, IB = 50 mA((1)
(IC = 1 A,IB = 100 mA)(1)
VBE(sat)
150
V
0.25
0.5
0.B5
V
0.9
1.5
2
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
(lc = 50 mA, VCE = 10 V, f
hfe
= 100 MHz)
3
Output Capacitance
(VCB = 10 V)
Cob
Input Capacitance
(VEB = 0.5 V)
Cib
Turn On Time
(lc = 500 mA. IB1
pF
60
ns
ton
= 50 mAl
60
Turn Off Time
(lc = 500 mA. IB1
• Pulsed:
pF
10
ns
toff
= IB2 = 50 mAl
Pulse Duration = 300 ~s, Duty Cycle = 1%.
60
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-292
MAXIMUM RATINGS
Rating
Symbol
BSX BSX BSX
45 46 47
Unit
Collector-Emitter Voltage
VCEO
40
Collector-Emitter Voltage
VCES
80 100 120
Emitter-Base Voltage
VEBO
7
Vdc
IC
1
Adc
Collector Current - Continuous
60
80
Vdc
Vdc
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
1
5.71
Watt
mW;oC
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Po
5
28.6
Watt
mW;oC
TJ, Tstg
-65 to +200
°C
Max
Unit
RHJC
I
I
35
°C/W
RIiJA
I
200
°C/W
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
I
BSX45-6, -10, -16
thru
BSX47-6, -10, -16
I
I
Characteristic
I Thermal Resistance, Junction to Case
LThermal Resistance, Junction to Ambient I
Symbol
NPN SILICON
Refer to 2N3019 for graphs,
I
ELECTRICAL CHARACTERISTICS (T A
~ 25°C unless otherwise noted.)
I Symbol I
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(IC ~ 30 mAde, IB ~ 0)
Collector-Emitter Breakdown Voltage
(lc ~ 1 00 ~Adc, VBE ~ 0)
40
60
SO
Vdc
V(BR)CES
BSX45 Series
BSX46 Series
BSX47 Series
SO
100
120
Emitter-Base Breakdown Voltage
(IE ~ 100 ~Adc, IC ~ 0)
Vdc
V(BR)EBO
7
Emitter Cutoff Current
(VBE ~ 5.0 Vdc, IC ~ 0)
Collector
(VCE ~
(VCE ~
(VCE ~
(VCE ~
Vdc
V(BR)CEO
BSX45 Series
BSX46 Series
BSX47 Series
nAdc
lEBO
10
Cutoff Current
60 V, VBE ~ 0)
80 V, VBE ~ 0)
60 V, VBE ~ 0, TC ~ 150°C)
SO V, VBE ~ 0, TC ~ 150°C)
BSX45,46 Series
BSX47 Series
BSX45,46 Series
BSX47 Series
ICES
10
10
10
10
nAdc
~Adc
ON CHARACTERISTICS
DC Current Gain
(lc ~ 0.1 mAde, VCE
(lc
~
~
100 mAde, VCE
1.0 Vdc)
~
1.0 Vdc)(l)
(lc ~ 500 mAde, VCE ~ 1.0 Vdc) (1)
hFE
-6
-10
-16
-6
-10
-16
-6
-10
-16
Base-Emitter On Voltage
(IC ~ 100 mAde, VCE ~ 1.0 Vdc)
(IC ~ 500 mAde, VCE ~ 1.0 Vdc)
(IC ~ 1 A. VCE ~ 1.0 Vdc)
VBE(on)
Collector-Emitter Saturation Voltage
(lc ~ 1 Adc, IB ~ 100 mAde)
VEC(sat)
10
15
25
40
63
100
15
25
35
100
160
250
0.75
1
1.5
2
Vdc
Vdc
1
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
(lc ~ 50 mAde, VCE
~
10 Vdc, f
~
tr
20 MHz)
Emitter-Base Capacitance
(VSE ~ 0.5 V, f ~ 1 MHz)
MHz
50
pF
Cib
SO
(1) Pulsed: Pulse Duration ~ 300 ~s, Duty Cycle ~ 1%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-293
•
BSX45-6, -10, -16 thru BSX47-6, -10, -16
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Collector-Base Capacitance
(VCB = 10 V. f = 1 MHz)
Min
I
Turn Off Time
IIBl
See Figure 1
(lc = 100 mAde)
pF
= -IB2 = 5 mAde)
ton
200
toft
B50
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
10J.ls
--1L
.....-:>,,..--_---0 Oscilloscope
Ir< 15 ns
Z, .. 100 k ohms
1.0 k
V
50
BAY63
Unit
25
20
15
BSX45
BSX46
BSX47
Turn On Time
Ir< 15n$
11< lSns
Rj = 50 II
Max
Cob
1.0 k
130
VBB =-75 V
Vee
=+20 V
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-294
no
BSX59
BSX60
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
Symbol
BSX
59
BSX
60
Unit
Collector-Emitter Voltage
VCEO
45
30
Vdc
Collector-Emitter Voltage
VCES
60
60
Vdc
Collector-Base Voltage
VCBO
70
70
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1
Adc
Collector Current - Continuous
Total Device Dissipation @TA
Derate above 25°C
= 25°C
PD
0.8
4.57
Watt
mW;oC
Total Device DissipatIon @TC
Derate above 25°C
= 25°C
PD
3.5
20
Watt
mW/oC
TJ, Tstg
-65to+200
°c
Operating and Storage Junction
Temperature Range
,f/!
2
~()'-
1
1 Emitter
SWITCHING TRANSISTORS
NPN SILICON
Refer to 2N3725 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I Symbol I
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mAdc,lB = 0)
45
30
Collector-Base Breakdown Voltage
(lC = 10 I'A. IE = 0)
Collector Cutoff Current
(VCB = 40 V, IE = 0)
(VCB = 40 V,IE = 0, TJ
= 150°C)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
(VEB = 4.0 V, IE = 0, T J
= 150°C)
V
V(BR)CEO
[BSX59]
[BSX60]
V(BR)CBO
V
70
ICBO
500
300
nA
I'A
300
50
nA
I'A
500
300
nA
I'A
500
300
nA
I'A
lEBO
Collector Cutoff Current
(VCE = 40 V, -VBE = 4.0 V)
(VCE = 40 V, -VBE = 4.0 V, T J
= 150°C)
Emitter Cutoff Current
(VCE = 40 V, -VBE = 4.0 V)
(VCE = 40 V, -VBE = 4.0 V, TJ
= 150°C)
ICEX
IBEX
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(lc '" 150 mA,lB = 15 rnA)
(lc = 500 rnA, IB = 50 rnA)
(IC = 1.0A.IB = 100 rnA)
Base-Emitter Saturation Voltage
(lc = 150 mA,lB = 15 rnA)
(lC = 500 rnA, IB = 50 rnA)
(lc
=
1.0 A, IB
=
=
1.0 A, VCE
0.3
0.5
1.0
=
=
V
V
VBE(sat)
1.0
1.2
1.3
1.8
[BSX59]
[BSX60]
100 rnA)
DC Current Gam
(IC = 150 rnA, VCE
(IC = 500 rnA, VCE
(IC
VCE(sat)
hFE
1.0 V)
1.0 V)
30
25
30
20
25
[BSX59]
[BSX60]
[BSX59]
[BSX60]
= 5.0 V)
90
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gam
(lc = 50 rnA, VCE = 10 V, f
Input Capacitance
(-VBE = 0.5 V, IC
= 0, f =
=
Ihfel
2.5
100 MHz)
pF
Cib
60
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-295
•
BSX59, BSX60
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Output Capacitance
(VeB = 10 V, IE = 0, f
= 1.0 MHz)
Turn On Time (See Figure 1)
(Ie = 500 mA, IB = 50 mA, - VBE
(Vee = 50 V)
(Vec = 30 V)
Min
= 2.0
pF
ns
ton
V)
[BSX59j
[BSX60j
35
40
ns
Toff
[BSX59j
[BSX60j
FIGURE 1 -
60
70
SWITCHING TIME TEST CIRCUIT
Vee
Re
VOUT
0
"5~
375n
I
I1
I
I
f- -1
56n
~s
400n
toff
1.. ~500ns .1
Pulse Generator
Output Impedance = 50 n
-3V
BSX59
BSX60
BSX61
Measurement
ton
toff
Unit
10
Turn Off Time (See Figure 1)
(Ie = 500 mA, IB1 = IB2 = 50 mAl
(Vee = 50 V)
(Vee = 30 V)
I
Max
eob
Vee
Re
-VB
Vin
-VB
Vin
50
100
30
60
V
Q
4.0
24.75
V
V
16.7
37.5
V
V
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-296
CV9507
(CECC 50004-050)
CASE 79-04, STYLE 1
TO-39 (TO-205ADI
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
65
Vdc
Collector-Base Voltage
VCBO
65
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current - Continuous
IC
0.6
Adc
Total Oevice Dissipation @TA = 25°C
Derate above 25°C
PD
0.5
3.33
Watt
mW/oC
TJ, Tstg
- 55 to +175
°c
Operating and Storage Junction
Temperature Range
,I "~"~m'~'
3 Collector
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
PNP SILICON
Characteristic
Thermal Resistance, Junction to Case
Refer to 2N2904 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Symbol
Cha racteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lc = lOrnA, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 50 V, IE = 0)
(VCB = 50 V, IE = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 3 V, IC = 0)
"(VEB = 5 V, IC = 0)
lEBO
Vdc
65
75
1
nA
100
10
nA
~A
~A
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage(l)
(lc = 150 rnA, IB = 15 mAl
VCE(sat)
Base-Emitter Saturation Voltage(1)
(lC = 150 rnA, IB = 15 mAl
(IC = 30 mA, IB = 1 rnA)
VBE(sat)
Vdc
0.4
Vdc
1.3
0.9
DC Current Gain
(lc = 1 rnA, VCE = 0.4 V)
(IC = 10 mA, VCE = 0.4 V)
(IC = 50 rnA, VCE = 0.4 V)
(IC = 150 rnA, VCE = 0.4 V)
hFE
40
50
20
10
200
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 50 rnA, VCE = 10 V, I = 20 MHz)
MHz
IT
50
Output Capacitance
(VCB = 10 V, 1= 1 MHz)
pF
Cobo
12
SWITCHING CHARACTERISTICS
Storage Time (See Figure 1)
(VCC = -4 V, IC = -100 rnA)
(IBl = IB2 = 10 rnA)
(1) Pulsed: Pulse Duration
= 300
~s,
Duty Cycle
= 1%.
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
VBB -15V
Vee - 4V
1,3k
910
o
HIN
0,47pf
.......- -.....- - 0 Oscilloscope
ze ~ lMn.
II------t
IBI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-297
36
•
CV10253
CV12253
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
65
Vdc
Collector-Base Voltage
VCBO
65
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
IC
0.6
Adc
PD
0.6
4.0
Watt
mW/oC
TJ, Tstg
-55 to +175
°c
Collector Current - Continuous
Total Device Dissipation @ T A
Derate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
•
AMPLIFIER TRANSISTORS
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
1
1 Symbol 1
Characteristic
Min
I.
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 10 rnA, IB = 0)
V
VCEO(sus)
65
Collector Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
Emitter Cutoff Current
(IEBO(1) VEB = 3 V.IC = 0)
(lEBO(2) VEB = 5 V, IC = 0)
lEBO
Collector Cutoff Current
(VCE = 50 V, TA = 100°C)
ICEO
nA
20
20
2
nA
I'A
I'A
80
ON CHARACTERISTICS
DC Current Gain
(h21 e(1) IC = 1.0 rnA, VCE = 0.4 V)
(h21 e(2) Ic = 10 rnA, VCE = 0.4 V)
(h21 e(3) Ic = 150 rnA, VCE = 0.75 V)(1)
(h21 e(4) Ic = 50 rnA, VCE = 0.4 V)
hFE
40
50
25
35
I
Base-Emitter Saturation Voltage(1)
(lc = 30 rnA. 18 = 1 rnA)
(lc = 150 rnA, IB = 15 rnA)
200
-
V
VBE(sat)
0.9
1.3
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 50 mA, VCE = 10 V, f = 35 MHz)
MHz
fT
60
Storage Time
CV10253
CV12253
(VCC = 45 V, IC = 100 rnA, IB1 = IB2 = 10 rnA)
Output Capacitance
(VCB = 10 V, f = 1 MHz)
ts
172
Cob
(1) Pulsed: Pulse Duration = 300 I'S, Duty Cycle = 1%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-298
250
550
ns
pF
20
CVI0440
(CECC 50004-087)
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
Symbol
. Value
Unit
Collector-Emitter Voltage
VCEO
45
Vdc
Collector-Base Voltage
VCBO
45
Vdc
Emitter-Base Voltage
VEBO
5
Vdc
Collector Current - Continuous
IC
250
mAmp
Total Device Dissipation @TA = 25°C
Derate above 25°C
Po
0.3
2.0
Watt
mW/oC
TJ, Tstg
- 55 to +175
°c
Operating and Storage Junction
Temperature Range
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
NPN SILICON
Characteristic
Thermal Resistance, Junction to Ambient
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I Symbol I
Max
Min
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC= 10mA,IB=0)
VCEO(sus)
Collector Cutoff Current (Emitter Open)
(VCB = 30 V, IB = 0)
(VCB = 30 V, IB = 0, TA = 100°C)
ICBO
Emitter Cutoff Current
(VEB = 5 V, IC = 0)
lEBO
45
Vdc
100
15
nA
I'A
500
nA
0.9
Vdc
' Vdc
ON CHARACTERISTICS
Base-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mAl
(IC = 50 mA, IB = 2.5 mAl
VBE(sat)
1.6
DC Current Gain
(IC = 10 I'A, VCE = 0.4 V)
(IC = 1 mA, VCE = 0.4 V)
(lc = 10 mA, VCE = 0.4 V)
hFE
40
175
225
Collector-Emitter Saturation Voltage
(IC = lOrnA, IB = 1 rnA)
500
550
VCE(sat)
0.3
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(lc = 10 mA, VCE = 5 V, I = 35 MHz)
IT
MHz
200
Output Capacitance
(VCB = 5 V, IE = 0, I = 1 MHz)
Cob
8
SWITCHING CHARACTERISTICS
Storage Time (See Figure 1)
(VCC = 4 V, VBB = 15 V, IC = 10 rnA, IBl = IB2 = 1 rnA)
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
VBB -15V
VCC - 4V
15k
...f1..
Pulse Generetor I Bl
20V tp " 1.5,...
Duty Cycle. 1%
tf of Generator
E 5ns
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-299
390
pF
•
CV10814
CASE 22-03, STYLE 1
TO-1S (TO-206AA)
II ~~,~,
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Sase Voltage
VCSO
40
Vdc
Em itter-Sase Voltage
VESO
5
Vdc
Collector Current - Continuous
IC
100
mAmp
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD
300
2.0
mWatt
mW/oC
TJ, Tstg
-55 to +175
°c
Operating and Storage Junction
Temperature Range
3 Collector
'"
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
•
I
I
Thermal Resistance, Junction to Ambient I
Characteristic
Thermal Resistance, Junction to Case
I
Max
RhJC
I
I
200
I
I
°C/W
I
I
RHJA
J
500
I
°C/W
I
Symbol
Unit
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
PNP SILICON
I Symbol I
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lc = 2 mA, IS = 0)
VCEO(sus
Collector Cutoff Current (Emitter Open)
(VCS = 30 V, IE = 0)
(VCS = 30 V, IE '" 0, TA = 100°C)
ICSO
Emitter Cutoff Current (Collector Open)
(VES = 5 V, IC = 0)
IESO
V
40
100
4
nA
~A
nA
500
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(IC = lamA, IS = 1 mAl
V
VCE(sat)
0.3
DC Current Gain
(IC = 1a ~A, VCE = 5 V)
(lc = 2 mA, VCE = 5 V)
hFE
40
125
400
SMALL SIGNAL CHARACTERISTICS
Current Gain Sandwidth Product
(lc = lamA, VCE = 5 V, f = 100 MHz)
fT
Small Signal Current Gain
(IC = 1 mA, VCE = 10 V, f = 1 kHz)
hfe
Noise Figure
(Ra = 2 KO, VCE
NF
= 5 V,
IE = 200
~A,
MHz
200
100
f
= 30. Hz
400
dS
2
to 15 kHz
Output Capacita nee
(VCS = 5 V, f = 1 MHz)
pF
Cobo
8
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-300
CV12253
For Specifications, See CV!0253 Data.
MD708, A, B
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Rating
Collector Current -
Continuous
Both Die
One Die Equal Power
Total Device Dissipation @l TA
Derate above 25'C
MD708, MD708A, MD708B
~
Total Device Dissipation @ TC
~
25'C
25'C
550
3.13
600
3.42
mW/,C
1.4
8.0
2.0
11.4
Watts
mW/,C
Po
Derate above 25°C
Operating and Storage Junction
Temperature Range
Emitter 3
5 Emitter
mW
Po
-65 to +200
TJ, Tstg
DUAL
AMPLIFIER TRANSISTORS
'c
NPN SILICON
Refer to MD2369 for graphs.
THERMAL CHARACTERISTICS
One Die
Both Die
Equal Power
Unit
R8JC
125
87.5
'elW
R8JA(1)
319
292
'CIW
Junction to
Ambient
Junction to
Case
83
40
Symbol
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Coupling Factors
%
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(lC
(IE
(lC
~
~
~
30 mAde. IB
~
10 !JAdc. IE
10 pAdc. IC
(VCB ~ 20 Vdc. IE ~ 0)
(VCB ~ 20 Vdc.IE ~ O. TA
~
~
~
0)
0)
0)
V(BR)CEO
15
-
Vdc
V(BR)CBO
40
-
Vdc
V(BRIEBO
5.0
-
ICBO
-
15
30
hFE
40
40
35
20
150'C)
Vdc
nAdc
!JAdc
ON CHARACTERISTICS
(lC ~ 500 pAdc. VCE ~ 1.0 Vde)
(lC ~ 10 mAde. VCE ~ 1.0 Vde)
(lC ~ 100 mAde. VCE ~ 5.0 Vde)
(lc ~ 150 mAde. VCE ~ 5.0 Vde)
DC Current Gain(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC
(lC
(lC
(lC
(lC
(lC
~
~
~
~
~
~
10 mAde.IB ~ 1.0 mAde)
50 mAde. IB ~ 5.0 mAde)
100 mAde. IB ~ 10 mAde)
VCE(sat)
10 mAde. IB ~ 1.0 mAde)
50 mAde. IB ~ 5.0 mAdc)
100 mAdc. IB ~ 10 mAdc)
VBE(sat)
0.65
-
(2) Pulse Test: Pulse W,dth", 300 ,...s. Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-301
-
-
200
-
0.20
0.35
0.50
Vde
0.85
0.95
1.10
Vde
•
MD918A
MD918B
MAXIMUM RATINGS
Rating
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vde
Collector-Base Voltage
VCES
30
Vde
Emitter-Base Voltage
VEBO
3.0
Vde
IC
50
mAde
Collector Current -
•
Symbol
Continuous
Total Device Dissipation @ TA = 25°C
MD918.A,B
MD918AF
Derate above 25°C
MD918.A,B
MD918AF
PD
Total Device Dissipation @ TC = 25°C
MD918,A,B
MD918AF
Derate above 25°C
MD918.A,B
MD918AF
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
CASE 654-07, STYLE 1
One Die
Both Die
550
350
600
400
mW
3.14
2.0
3.42
2.28
mW;oC
1.4
0.7
2.0
1.4
Watts
8.0
4.0
11.4
8.0
mW;oC
MD918AF ~1
9
CASE 610A·04. STYLE 1
-65 to +200
DUAL
AMPLIFIER TRANSISTORS
NPNSILICON
°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
MD918A,B
MD918AF
One Die
125
250
87.5
125
319
500
292
438
Junction to
Ambient
Junction to
Case
83
75
40
0
°CIW
R8JA(I)
Coupling Factors
MD918A,B
MD918AF
j~-~~.
°CIW
R8JC
Thermal Resistance, Junction to Ambient
MD918A,B
MD918AF
PIN CONNECTION DIAGRAMS
All Die
Equal Power Unit
EmItter 3
5 Emttter
Emitter 2
CASE 654-07
STYLE 1
4 Emitter
CASE 610A-04
STYLE 1
%
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voitage(2)
(lC = 3.0 mAde, IB = 0)
V(BR)CEO
15
-
Collector-Base Breakdown Voltage
(lC = 1.0 pAde, IE = 0)
V(BR)CBO
30
-
-
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
3.0
-
-
Vde
-
-
10
1.0
nAde
pAde
50
165
-
Characteristic
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 15 Vde, IE = 0)
(VCB = 15 Vde, iE = 0, TA
ICBO
=
150°C)
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE = 5.0 Vde)
hFE
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 Ade)
VCE(sat)
-
0.09
0.2
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
0.86
0.9
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vde, f
=
tr
100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cobo
600
-
-
MHz
-
1.1
1.7
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-302
MD918A, B, AF
ELECTRICAL CHARACTERISTICS (continued) (TA = 2S'C unless otherwise noted.)
Symbol
Characteristic
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
Noise Figure
(lc = 1.0 mAde, VCE
Min
Typ
Max
Unit
Cibo
-
1.15
2.0
pF
NF
-
-
6.0
dB
0.8
0.9
-
1.0
1.0
-
-
10
5.0
100 kHz)
= 6.0 Vde,
RS
= 400n, f = 60 MHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC = 1.0 mAde, VCE = 5.0 Vdc)
hFE1/hFE2
MD918B
MD918A,AF
Base-Emitter Voltage Differential
(lC = 1.0 mAde, VCE = 5.0 Vde)
IVBE1- V BE21
MD918B
MD918A,AF
Base-Emitter Voltage Differential Gradient
(lC = 1.0 mAde, VCE = 5.0 Vde,
TA = -55to + 125'C)
.l.(VBE1-VBE2)
.l.TA
MD918B,AF
MD918A
mVdc
-
20
10
,.V/de
'c
(2) Pulse Test: Pulse Width", 300 ,.s, Duty Cycle'" 2.0%.
(3) The lowest hFE reading is taken as hFEl for this ratio.
400
1.0
r-
,
TJ= 15~C
z
-- --
200
f-'
;;:
to
~
'"'"::>
<.>
<.>
Q
~
0
........
0
-55°C
40
0.5 0.7
1.0
~
'"~
i3
~o
-1.2
~~
«
~'!IL
~~
~
\'I.
o
""- ':l\
lO
O. 4
,,:
O.2
FIGURE 3 - BASE-EMITTER
TEMPERATURE COEFFICIENT
-;;;
1--1 J5b! to 15&OC+--+-++-I-Hf-tt-t-t--hA---l
to::>
V-
VCE( ..t)
2.0 l.O
5.0 7.0 10
IC, COLLECTOR CURRENT (mAl
:r
-
1/
,/
lO
50
o
~C!
.\01)
TJ = 25°C
f=100MHz
r--.,
.........
~ 1000
-1.4I-+Htt--+-t--+-+--+-+++++--1V~'-I-+--l
20
FIGURE 4 - CURRENT -GAIN
BANDWIDTH PRODUCT
2000
~
1.0
-
~
........
IC IB = 0
1111
0
0.5 0.7
50
«
~
....
>
:;: -1.6'H-+++f---+-i--+--+--+-+-HoI"I--+-+-+--+--l
::>
'"
....
;
--
w
to
-~.
20
....
l--- .....
VBE(on) • VCE = 5.0 V
~ O. 6
I'..
2.0 l~O
5~0
7.0 10
IC, COLLECTOR CURRENT (mA)
~
....-
in
~
I II-----,r-r--r-,.--"T"""T"TTT.----.---.,-,.-,-j---,
-1.0r-.-r-.-TT
13
==
VBE(it)=l~
TJ=250C
~~~~~OO:- ~~
r\
11111
I I
20
3;
"
25°C
II, .I I J
II
O.B
~
100
•
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
:r
....
o
~
:i
700
z
500
I
z
,/
;;:
to
-1.8
~
BIVilr8E .....
rt1Tl
-2.0
0.5 0.7
1.0
lO
0
i3 200
2.0 l.O
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
lO
50
.t'
l.O
0.5 0.7
1.0
2.0
3.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-303
5.0 7.0
10
20
30
MD918A, B, AF
FIGURE 5 - CAPACITANCE
3. 0
-
2.0
...
u..
w
:i''"
t--..
1.0
r-t--
=1250~
Cob
Cib
t::
'"f
:3
TJ
0.7
",-
0.5
0.3
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
VR. REVERSE VOLTAGE (VOLTS)
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-304
MAXIMUM RATINGS
Rating
MD982, F
MQ982
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAde
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
M0982
MD982F
MQ982
Derate above 25°C
MD982
MD982F
MQ982
Po
Total Device Dissipation @ TC = 25°C
M0982
M0982F
MQ982
Derate above 25°C
MD982
M0982F
MQ982
Po
One Die
AU Die
600
350
400
650
400
600
MD982
CASE 654-07, STYLE 1
DUAL
mW
MD982F
CASE 610A-04, STYLE 1 ~
DUAL
~ 1
mWrC
3.42
2.0
2.28
3.7
2.28
3.42
2.1
1.25
1.0
3.8
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
9
Watts
MQ982
CASE 607-04, STYLE 1
QUAD
-4#11
/j
14
mWrC
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
AMPLIFIER TRANSISTORS
PNP SILICON
°c
0
PIN CONNECTION DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
M0982
M0982F
MQ982
One Die
CASE 654-07, STYLE 1
°CIW
RfJJC
83.3
140
175
Thermal Resistance, Junction to Ambient
M0982
MD982F
MQ982
Collector 1 7 Collector
AU Die
Equal Power Unit
2
Base
58.3
70
43.8
RruA(1)
Collector 9
292
500
438
270
438
292
Junction to
Ambient
Junction to
Case
85
75
57
55
40
0
0
0
Coupling Factor
M0982
M0982F
MQ982 (Ql-Q2)
(Q1-Q3 or Q1-Q4)
7 Collector
~
°CIW
1~5
.".
Emitter 2
PNP
EmItter 3
6
Base
5 Emitter
CASE 610A-04, STYLE 1
.".
4 Emitter
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB
(VCB
(lC
(IE
=
(lC
=
=
10 mAde, IB
10 pAde, IC
= 50 Vde,
= 50 Vde,
= 0)
= 0)
= 0)
10 pAdc, IE
IE
IE
= 0)
= 0, TA =
V(BR)CEO
50
-
V(BR)CBO
60
-
-
V(BR)EBO
5.0
-
-
ICBO
-
-
0.020
20
hFE
20
25
35
50
75
90
60
-
150°C)
Vde
Vde
Vde
pAde
ON CHARACTERISTlCS(2)
= 0.1 mAde, VCE = 10 Vde)
= 1.0 mAde, VCE = 10 Vde)
= 10 mAde, VCE = 10 Vde)
= 150 mAde, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage (lC = 150 mAde, IB = 15 mAde)
Base-Emitter Saturation Voltage (lC = 150 mAde, IB = 15 mAde)
DC Current Gain
(lC
(lC
(lc
(lc
40
-
-
-
-
0.25
0.5
Vde
VBE(sat)
0.88
1.4
Vde
for
200
320
-
MHz
Cobo
-
5.8
8.0
pF
Cibo
-
16
30
pF
VCE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
Input Capacitance
= 10 Vde, IE = 0, f = 100 kHz)
= 2.0 Vde, IC = 0, f = 100 kHz)
(VCB
(VBE
(2) Pulse Test: Pulse Width", 300 ILS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-305
..
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
20
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
200
mAde
Collector Current -
Continuous
One Die
Both Die
Equal Power
MD984
CASE 654-07, STYLE 1
Total Device Dissipation @ TA
25'C
Derate above 25'C
=
Po
575
3.29
625
3.57
mW
mWrC
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
1.8
10.3
2.5
14.3
Watts
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
'C
Emitter 3
DUAL
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
Symbol
One Ole
Both Die
Equal Power
Thermal Resistance, Junction to Case
R8JC
97
70
'CIW
R8JA(I)
304
280
'CIW
Junction to
Ambient
Junction to
Case
84
44
Thermal Resistance, Junction to
Ambient
Coupling Factor
5 Emitter
Unit
PNP SILICON
Refer to MD3250 for graphs.
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
20
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
40
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
-
Vde
-
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vde, IE = 0)
(VCB = 20 Vde, IE = 0, TA
ICBO
-
-
25
30
nAde
pAde
hFE
25
75
-
-
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)(2)
VCE(sat)
-
0.18
0.38
0.3
0.5
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
0.8
0.9
=
150'C)
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 10 mAde, VCE
=
10 Vde)
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 20 mAde, VCE = 20 Vde, f = 100 MHz)
(2) Pulse Test: Pulse Width"" 300 p,s, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-306
Vde
MD985
CASE 654-07, STYLE 5
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAdc
Rating
Collector Current -
Continuous
Po
Total Device Dissipation
@TA = 25°C
Derate above 25°C
=
Both Die
Equal Power
575
3.29
2.0
625
3.57
2.28
mWrC
1.8
10.3
2.5
14.3
mW/oC
Po
Total Device Dissipation
@TC
One Die
25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
Emitter 3
5 Emitter
mW
Watts
-65 to +200
COMPLEMENTARY DUAL
GENERAL PURPOSE TRANSISTORS
°c
NPN/PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
One Die
Both Die
Equal Power
ROJC
97
70
°CIW
304
280
°CIW
Junction to
Ambient
Junction to
Case
84
44
ROJA(1)
Coupling Factors
Unit
%
(1) ROJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
30
-
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
60
-
-
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
-
-
20
20
nAdc
pAde
20
25
35
40
50
75
90
90
-
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA
ICBO
=
+ 150°C)
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(lC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vde)
(lc = 10 mAdc, VCE = 10 Vdc)
(lC = 150 mAde, VCE = 10 Vde)
-
hFE
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.3
0.5
Vdc
Base-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAde)
VBE(sat)
-
1.0
1.4
Vde
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-307
I
I
•
MD985
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
tr
200
320
-
MHz
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cobo
-
5.B
B.O
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, f = 100 kHz)
Cibo
-
20
-
pF
25
-
ns
75
-
ns
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vdc, IC = 150 mAdc, 181 = 15 mAdc)
ton
Turn-Off Time
(VCC = 30 Vdc, IC
toff
=
150 mAdc, IBl = IB2 = 15 mAdc)
-
(2) Pulse Test: Pulse Width .. 300 IJ.S, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-308
MDl121
MDl122
MQl120
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current -
Continuous
Total Device Dissipation (aJ TA
MDl121, MDl122
MOl120
Derate above 25'C
MDl121, MDl122
MOl120
=
Total Device Dissipation CaJ TC
MDl121, MD1122
MOl120
Derate above 25'C
MD1121, MD1122
M01120
=
25'C
MD1122
CASE 610A-04, STYLE ~
One Die
AU Die
Equal
Power
575
400
625
600
mW
3.29
2.28
3.57
3.42
mWrC
DUAL
AMPLIFIER TRANSISTORS
1.8
0.9
2.5
3.6
Watts
NPN SILICON
10.3
5.13
14.3
20.5
mWrC
9
PD
25'C
MD1121
CASE 654-07, STYLE 1
MQ1120
CASE 607-04, STYLE 1
14
PD
Operating and Storage Junction
Refer to MD2218.A for graphs.
-65 to +200
TJ, Tstg
PIN CONNECTION DIAGRAMS
'c
Temperature Range
Characteristic
CASE 654-07, STYLE 1
Symbol
Thermal Resistance, Junction to Case
MDl121, MDl122
MOl120
Thermal Resistance, Junction to Ambient
MDl121, MDl122
M01120
One Die
'CIW
97
195
2
Base
AU Die
Equal Power Unit
R6JC
70
48.8
Collector 9
7 Collector
~
304
438
280
292
Junction to
Ambient
Junction to
Case
84
57
55
44
0
0
Basel 1
Emitter 2
NPN
Emitter 3
6
Base
5 Emitter
CASE 610A-04. STYLE 1
NPN
'CIW
R6JA(1)
Coupling Factors
MDl121, MDl122
MOl120 (01-02)
(01-03 or 01-04)
IS
0
Collector 1 7 Collector
THERMAL CHARACTERISTICS
(1) R6JA
--~
15 Base
4 Emitter
Unit
%
measured With the device soldered Into a typical printed CirCUit board.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lc = 10 mAde, IB = 0)
V(BR)CEO
30
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
60
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
Characteristic
Typ
Max
Unit
-
-
Vdc
-
Vdc
-
Vdc
-
-
10
10
nAdc
pAdc
-
10
nAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA
ICBO
=
150'C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
lEBO
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-309
•
MD1121, MD1122, MQ1120
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
20
30
40
40
50
60
65
100
120
160
200
Unit
ON CHARACTERISnCS
DC Current Gain(2)
(lC = 10 pAdc, VCE = 10 Vdc)
(lc = 100 pAdc, VCE = 10 Vdc)
(lc = 1.0 mAdc, VCE = 10 Vdc)
(lC = 10 mAdc, VCE = 10 Vdc)
hFE
50
-
80
100
mVdc
VBE(sat)
-
700
850
mVdc
IT
200
250
-
Cobo
-
3.5
8.0
0.8
0.9
-
-
1.0
1.0
-
10
5.0
Collector-Emitter Saturation Voltage
(lC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAdc, IB = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISnCS
Current-Gain - Bandwidth Product(2)
(lC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
•
=
0, f
=
MHz
pF
100 kHz)
MATCHING CHARACTERISncS
DC Current Gain Ratio(3)
(lC = 100 pAdc, VCE = 10 Vdc)
(lc = 1.0 mAdc, VCE = 10 Vdc)
All Devices
MD1122
Base-Emitter Voltage Differential
(lC = 100 pAdc, VCE = 10 Vdc)
(lc = 1.0 mAdc, VCE = 10 Vdc)
All Devices
MD1122
hFE1/hFE2
IVBE1-VBE21
Base-Emitter Voltage Differential Change
Due to Temperature - MDl121, MD1122
(lc = 100 pAdc, VCE = 10 Vdc, TA = -55 to +25°C)
(lc = loopAdc,VCE = 10 Vdc,TA = +25 to +125°C)
-
-
mVdc
mVdc
d(VBE1-VBE2)
-
(2) Pulse Test: Pulse Width", 300 J.'S, Duty Cycle'" 2.0%.
(3) The lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-310
-
-
0.8
1.0
MAXIMUM RATINGS
Rating
MDl132
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAde
Collector Current -
Continuous
CASE 654-07, STYLE 1
One Die
Both Die
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
550
3.14
600
3.42
mW
mWf'C
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
1.4
8.0
2.0
11.4
Watts
mWf'C
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
"C
Emitter 3
DUAL
RF AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
One Die
Both Die
Equal Power
RaJC
125
87.5
"cm
RaJA(l)
319
292
"Cm
Junction to
Ambient
Junction to
ease
Unit
83
40
%
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Coupling Factors
5 Emitter
Unit
NPNSILICON
•
Refer to MD918 for graphs.
(1) RaJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwisenoted.)
Characteristic
I
Symbol
Min
Typ
Max
-
Unit
OFF CHARACTERISTICS
= 3.0 mAde, IB = 0)
= 0)
Emitter-Base Breakdown Voltage (IE = 10 !LAde, IC = 0)
Collector Cutoff Current (VCB = 15 Vde, IE = 0)
(VCB = 15 Vde, IE = 0, TA = 150"C)
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
(lc
(lC
=
1.0 !LAde, IE
V(BR)CEO
15
-
V(BR)CBO
30
-
V(BR)EBO
5.0
ICBO
-
-
10
1.0
Vde
Vde
Vde
nAde
!LAde
ON CHARACTERISTICS
DC Current Gain(2)
(lC
=
= 5.0 Vdc)
= 10 mAde, IB = 1.0 mAde)
= 10 mAde, IB = 1.0 mAde)
1.0 mAde, VCE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC
(lC
hFE
50
-
-
-
VCE(sat)
0.2
0.4
Vde
VBE(sat)
-
0.7
1.0
Vde
600
800
-
-
-
1.5
1.3
3.0
1.7
pF
1.8
2.0
pF
-
SMALL-SIGNAL CHARACTERISTICS
tr
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vde, f
= 100 MHz)
Output Capacitance (VCB = 0, IE = 0, f = 140 kHz)
(VCB = 10 Vde, IE = 0, f = 140 kHz)
Input Capacitance (VEB = 0.5 Vde, IC = 0, f = 140 kHz)
Cobo
Cibo
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lc
=
Base-Emitter Voltage Differential
1.0 mAde, VCE
(lC
=
=
5.0 Vdc)
1.0 mAde, VCE
=
hFE1/hFE2
5.0 Vde)
Base-Emitter Voltage Differential Change Due to Temperature
(lc = 1.0 mAde, VCE = 5.0 Vde, TA = -55 to +25"C)
(lC = 1.0 mAde, VCE = 5.0 Vde, TA = +25 to + 125"C)
IVBE1- V BE21
0.9
-
1.0
-
-
5.0
-
-
mVde
d(VBE1-VBE2)
(2) Pulse Test: Pulse Width"" 300 IJ-S, Duty Cycle"" 2.0%.
(3) The lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-311
mVde
-
0.8
1.0
MAXIMUM RATINGS
I MD2218,A
Rating
Unit
Collector-Emitter Voltage
VCEO
30
40
Vde
Collector-Base Voltage
VCBO
60
75
Vde
Emitter-Base Voltage
VEBO
5.0
6.0
Vde
Collector Current -
•
Symbol
MD2219A.F
M02218,A MD2218AF
MQ2219.A MD2219AF
Continuous
500
IC
Total Device Dissipation
@TA = 25'C
MD2218,A. MD2219A
MD2218AF. MD2219F.AF
M02218,A. M02219,A
Derate above 25'C
MD2218,A. MD2219A
MD2218AF. MD2219F,AF
M02218,A. M02219,A
PD
Total Device Dissipation
@TC=25'C
MD2218,A. MD2219A
MD2218AF. MD2219F,AF
M02218.A. M02219,A
Derate above 25'C
MD2218.A. MD2219A
MD2218AF. MD2219F.AF
M02218.A. M02219.A
PD
Opljrating and Storage Junction
Temperature Range
TJ. Tstg
mAde
One Die
All Die
Equal
Power
575
350
400
625
400
600
3.29
2.0
2.28
3.57
2.28
3.42
mW
mW/,C
MD2218, A, AF
MD2219A, AF
MQ2218,A MQ2219,A
MD2218, A
MD2219A
CASE 654-07, STYLE 1
DUAL
MD2218AF
~_
MD2219AF
~
CASE 610A-04, STYLE 1 9
DUAL
MQ2218, A
MQ2219, A
CASE 607-04, STYLE 1
QUAD
AMPLIFIER TRANSISTORS
Watts
1.8
1.0
0.9
2.5
2.0
3.6
10.3
5.71
5.13
14.3
11.4
20.5
-65 to +200
NPN SILICON
mWf'C
PIN CONNECTION DIAGRAMS
CASE 654-07. STYLE 1
'c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
MD2218.A. MD2219A
MD2218AF. MD2219AF
MQ2218,A. MQ2219,A
IS
70
87.5
48.8
Base 1
'CIW
R8JA(1)
304
500
438
280
438
292
Junction to
Ambient
Junction to
Case
84
44
75
57
55
0
0
0
5 Emitter
·R'~-~ "_~m'
°CIW
97
175
195
Coupling Factors
MD2218.A. MD2219A
MD2218AF. MD2219AF
MQ2218,A. M02219,A (01-02)
(01-03 or 01-04)
Emitter 3
AU Die
Equal Power Unit
R8JC
Thermal Resistance. Junction to Ambient
MD2218.A. MD2219A
MD2218AF. MD2219AF
MQ2218.A. M02219,A
(1) R8JA
One Die
Emitter 2
15 Base
4 Emitter
%
measured with the device soldered Into a typICal printed CirCUit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lc = 10 mAde. IB = 0)
MD2218,A. MD2219A. M02218,A.
M02219.A
MD2218AF. MD2219AF
V(BR)CEO
Collector-Base Breakdown Voltage
(lC = 10 !LAde. IE = 0)
V(BR)CBO
MD2218.A. MD2219A. M02218.A.
MD2219A
MD2218AF. MD2219AF
Vde
30
40
-
-
Vde
60
75
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-312
-
-
-
-
MD2218, A, AF, MD2219A, AF, MQ2218, A, MQ2219, A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
Min
Typ
Max
MD2218.A, MD2219A, MQ2218.A,
MQ2219,A
MD2218AF, MD2219AF
Collector Cutoff Current
(VCE = 50 Vde, VEB(off) = 3.0 Vde)
-
5.0
6.0
-
nAde
ICEV
MD2218, MD2219F, MQ2218.A
MD2218A.AF, MD2219A.AF, MQ2219.A
Base Cutoff Cu rrent
(VCE = 50 Vde, VEB(offL = 3.0 Vde)
IBl
Unit
Vde
V(BR)EBO
-
20
15
-
30
-
-
-
nAde
ON CHARACTERISTlCS(2)
DC Current Gain
(lC = 0.1 mAde, VCE = 10 Vde)
-
hFE
MD2218.A,AF, MQ2218,A
MD2219A.AF, MQ2219.A
20
35
50
45
-
MD2218.A.AF, MQ2218.A
MD2219A.AF, MQ2219,A
25
50
55
55
-
M D2218.A.AF, MQ2218,A
MD2219A,AF, MQ2219.A
35
75
65
85
MD2218,A,AF, MQ2218,A
MD2219A.AF, MQ2219.A
20
50
65
65
-
MD2218.A.AF, MQ2218.A
MD2219A,AF, MQ2219.A
40
100
30
120
120
300
MD2218.A, MQ2218,A
MD2219A. MQ2219.A
25
30
75
75
-
-
•
(lc = 1,0 mAde, VCE = 10 Vde)
-
(lC = 10 mAde, VCE = 10 Vde)
-
-
(lC = 150 mAde, VCE = 1.0 Vde)
-
(lC = 150 mAde, VCE = 10 Vde)
(lC
= 300 mAde, VCE
= 10 Vde)
Collector-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 300 mAde, IB
Vde
VCE(sat)
MD2218.A, MD2219A, MQ2218.A.
MQ2219.A
MD2218AF, MD2219AF
-
0.2
0.4
0.3
MD2218,A, MD2219A, MQ2218.A,
MQ2219,A
MD2218AF, MD2219AF
-
0.35
1.2
0.9
-
= 30 mAde)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
-
Vde
VBE(sat)
MD2218.A. MD2219A, MQ2218.A,
MQ2219,A
MD2218AF, MD2219AF
0,6
0,6
0.95
1.0
1.3
1.2
MD2218,A, MD2219A. MQ2218.A,
MQ2219.A
MD2218AF, MD2219AF
-
-
-
2.0
1.8
fT
200
250
-
MHz
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cobo
-
3.5
8.0
pF
Input Capacitance
(VEB = 0.5 Vde, IC = 0, f = 100 kHz)
MD2218.A, MD2219A, MQ2218.A.
MQ2219,A
MD2218AF, MD2219AF
Cibo
(lC
= 300
mAde, IB = 30 mAde)
SMALL-SIGNAL CHARACTERISTICS
Current·Gain - Bandwidth Product
(lC = 20 mAde, VCE = 20 Vde, f = 100 MHz)
pF
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-313
15
18
20
25
MD2218, A, AF, MD221.9A, AF, MQ2218, A, MQ2219, A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 2Soe unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
td
-
-
20
IS
ns
-
40
30
ns
2S0
250
ns
70
60
ns
SWITCHING CHARACTERISTICS
(Vee = 30 Vde, Ie = ISO mAde,
VeE(off) = O.S Vde, lei = 15 mAde)
MD221S
MD221SA,AF, MD221SA,AF
DelavTime
-
MD221S
MD221SA,AF, MD221SA,AF
Rise Time
-
ts
MD221S
MD221SA,AF, MD221SA,AF
Fall TIme
-
tr
(Vee = 30 Vde, Ie = 150 mAde,
lei = le2 = 15 mAde)
MD221S
MD221SA,AF, MD221SA,AF
Storage Time
-
tf
-
-
-
-
-
-
-
-
(2) Pulse Test: Pulse Width", 300 1"8, Duty Cycle'" 2.0% .
•
FIGURE 1 - NORMALIZED DC CURRENT GAIN
4.0
~ 3. 0
N
TJ,175 0C
::;
~ 2. OI- I-
l--
t-
II:
-
I-
o
~
25 0
z
.~
....
t
l- t- t-
1. 0
~ O. 7
~
O. 5 .....
u
o
~
I-- ....
I-
I- I-
l - I-
,,~
--
-
......:
~
.........
~
~
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
30
20
Ie. COLLECTOR CURRENT (mAl
TJ' 25~C
200
O. 8
V~E(~tl @:C/IB- 10
o.6
VBE@VCE
~
....
I....-
~
~
5.0
10
-0.8
'V
i=
«
~
20
50
100
200
r-
~
:>
500
IilVB fO'?E
-
:i -1.6
~
~
2.0
'"
(-550C to 1250C)
<3
8
VCE(sa,,@ICIIB' 10
1.0
500
11[L...-1"
9ve for VCE(.. t)
ffi
1.0 V
IIIII
I IIIIIII
TT 1TTTI
O.2
I\.'\.
300
(250Cto 1750C)
E
O. 4
'"
1111
1.0
0
0.5
100
~
> +0.8
o
~
70
+1. 6
1. 2
~
o
>
>'
50
FIGURE 3 - TEMPERATURE COEFFICIENTS
FIGURE 2 - "ON" VOLTAGES
1.4
w
-,\
,,~
O. 2
Z
-I-
~
0.3
~
~
I
CE 1.0 VI--VCE'IOV I--
I-
-
-
-
-55 0C
II:
-t---
-
J
-
-2.4
0.5
1.0
2.0
III
5.0
10
20
50
Ie, COLLECTOR CURRENT (rnA)
IC, COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-314
100
200
500
MD2218, A, AF, MD2219A, AF, MQ2218, A, MQ2219, A
NOISE FIGURE
(VCE = 10 Vdc, TA = 25°C)
FIGURE 4 - FREQUENCY EFFECTS
FIGURE 5 - SOURCE RESISTANCE EFFECTS
B.O
10
"-
5.0
~
w
"'
4.0
:::>
to
u:
",
3.0
'"0z
~.
~
IC = 10 IIA
RS, 4.3 kn
2.0
.......
z
~
II
Z
il
0.1
0.5
0.2
1.0
2.0
5.0
10
20
Or--.
I"..
2. 0
50
0
0.1
100
I
V
...0.5
0.2
t, FRE!lUENCY (kHz)
1.0
5.0
2.0
10
20
FIGURE 6 - CURRENT-GAIN-BANOWIDTH PRODUCT
g
200
VCE = 20 V
TJ = 25°C
t=100MHz
1-....
e
z
Z
50
;;:
.1
Z
1"'-1'
r--.r--
Cob
10
<[
I-
<:;
~
;t 7.0
<[
to
,.:.
<.)
ffi
30
1:l
J:'
20
:::
!"--.Cib
w
<.)
70
TJ = 25°C
r-- 1"'-1'
~
~
100
«
'j'
r-- r-
V
e
3i
1'-1""-
20
I--'
if:
:J:
l-
•
1 ill
:J:
:::>
100
FIGURE 7 - CAPACITANCES
30
t;
50
RS, SOURCE RESISTANCE (k OHMS)
500
;; 300 t-
Ylil
;~~I
f'.
Z
II
.l!ll
V
I)
~
IC = 10011A
RS=1.0kn
1.0
o
4.
J
L
V
\
is
l0011A
V
to
w
.... i"'r--
,
Ic=1.0mA
6.0
:::>
u:
r-
I"-
w
~
8.0
I".r-,
I
t = 1.0kHz
V
V
10
0.1
~
5.0
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
3.0
0.1
30
0.2
0.3
1.0
0.5
IC, COLLECTOR CURRENT (mAde)
2.0
3.0
5.0
10
20
REVERSE VOLTAGE (VOLTS)
SWITCHING TIME CHARACTERISTICS
FIGURE 8 - TURN-ON TIME
200
\
FIGURE 9 - CHARGE DATA
10.000
1t,@5V
1'\1/
10 Or\.
l\.
500 O~~
TJ = 25°C
Ie' I, ~ 10
t,
TJ
r- t-
25°C
10
le/l~ ~
t-tVee
0
5V(UNLESS NOTED!
I-"
2000
Vee 30 V
UNLESS NOTED
1,\
I-'
L
1000
td@VEB(off)
~2~1 1\
0
0
r--
/
td@V"lofll ~O
'\:
~
I'
r-... r..... i'"
50
10
/
./ I;'
1" ~
I0
3.0
20 0 ......
20
30
50
200
-~
L?W
30V
., 'fi'
L
100
o
to100
Vee
QT. TOTAL CONTRO~
CHARGE
HIGH GAIN TYPES
GAIN TYPES
~
'\
t\,'
0
0
300
Ie, COLLECTOR CURRENT (mAl
-!lA,ACTIVE REGIO~t: ALL TYPES
CHARGE
~l
20
3.0
5.0
7.0
10
20
30
50
70
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-315
100
200
300
MD2218, A, AF, MD2219A, AF, MQ2218, A, MQ2219, A
,
300
FIGURE 10 - TURN-OFF BEHAVIOR
300 ,
200
~
~ 100
;:::
1"-
"
l'
g 70
f@
«
~
.
•
.i'
r-
50
lell.
30
~
'" "10
Ie/I.
It
""
"- .........
....
'-
LOW GAIN TYPES
e--ITJ ~
10
10
1I
5'C
20
t.
........
lell.
.....
~
10
P'" r-t-
~
l2; r--- .....
i'20 '
lell.
0
I
20
J',-
~Ie/I.~IO
...,
~
ti
-I--'
I"-
20 0
50
30
70
100
~P
~20
.....
0
......
lell.
r.......
0
i"""- I>
200
14H
i"-
I,
....
-
I"-
GAIN TYPES
TJ ~ 25'C
Io
10
300
I I
20
30
50
70
100
200
300
Ie, COLLECTOR CURRENT (mAl
FIGURE 11 - DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
DUTY CYCLE· 2,0%
10
0
Ie, COLLECTOR CURRENT (mAl
GENERATOR RISE TIME" 2,0 ns
PH" 200 ns
~
FIGURE 12 - STORAGE TIME AND FALL
TIME EQUIVALENT TEST CIRCUIT
+30 V
RISE TIME", 3.0%
DUTY CYCLE = 2.0%
+30 V
200
n
9V
o
200
619
SCOPE
Rin> 100 k ohms
SCOPE
Rin> 100 k ohms
+16~VR;
Cin,,12pF
RISE TIME" 5,0 ns
RISE TIME" 5,0 ns
1.0 k
Cin" 12 pF
nj-- ---J---
0
> 100
--
IN916
-13,8V
-3,0 V
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-316
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
500
mAde
Collector Current -
Continuous
One Ole
Total Device Dissipation
@TA = 25°C
MD2369,A,B
MD2369,AF,BF
M02369
Derate above 25°C
MD2369,A,B
MD2369F,AF,BF
M02369
PD
Total Device Dissipation
@TC = 25°C
MD2369,A,B
MD2369,AF,BF
M02369
Derate above 25°C
MD2369.A.B
MD2369,AF,BF
M02369
PD
MD2369,A,B,AF,BF
MQ2369
MD2369,A,B
CASE 654-07, STYLE 1
DUAL
AIIDie
Equal Power
mW
550
350
400
600
400
600
3.14
2.0
2.28
3.42
2.28
3.42
1.4
0.7
0.7
2.0
1.4
2.8
8.0
4.0
4.0
11.4
80
16
mWfC
Watts
MQ2369
CASE 607-04, STYLE 1
QUAD
TJ, Tstg
_'1
1~1
9
14
GENERAL PURPOSE
TRANSISTORS
mWfC
Operating and Storage Junction
Temperature Range
~
MD2369,AF,BF
CASE 610A-04, STYLE
DUAL
-65 to +200
NPN SILICON
PIN CONNECTION DIAGRAMS
°c
THERMAL CHARACTERISTICS
CASE 654-07, STYLE 1
Symbol
Characteristic
Thermal Resistance, Junction to Case
MD2369,A.B
MD2369,AF,BF
M02369
One Die
All Die
Equal Power Unit
°CIW
RruC
125
250
250
Thermal Resistance, Junction to Ambient
MD2369,A,B
MD2369,AF,BF
M02369
Collector 9
87.5
125
62.6
~
°erN
RruA(I)
319
500
438
292
438
292
7 Collector
Ba,.
1M5
Emitter 2
Emitter 3
5 Emitter
CASE 610A-04, STYLE 1
Ba,.
4 Emitter
Junction to Junction to
Ambient
Case
Coupling Factor
MD2369.A.B
MD2369,AF,BF
M02369 (01-02)
(01-03 or 01-04)
%
40
0
0
0
83
75
57
55
(1) R9JA is measured with the device soldered into a typical pnnted Circuit board.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
15
Collector-Base Breakdown Voltage
(lc = 10 !lAde, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 20 Vdc, 'E = 0)
(VCB = 20 Vdc, 'E = 0, TA
ICBO
=
+ 150°C)
-
Vdc
40
-
-
Vdc
5.0
-
-
Vdc
-
-
0.03
30
!lAde
ON CHARACTERISTICS(2)
DC Current Gain
(lc = 10 mAde, VCE
(lc = 10 mAde, VCE
=
=
1.0 Vdc)
1.0 Vdc, TA
=
-55°C)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-317
II
MD2369, A, B, AF, BF, MQ2369
ELECTRICAL CHARACTERISTICS (continued) (TA
=
25'C unless otherwise noted.)
Symbol
Min
Max
Unit
Collector-Emitter Saturation Voltage
(lC = 10 mAde, 'B = 1.0 mAde)
VCE(sat)
-
-
0.25
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
0.7
-
0.85
Vde
f,-
500
800
-
MHz
Output Capacitance
(VCB = 5.0 Vdc, 'E = 0, f = 100 kHz)
Cobo
-
4.0
pF
Input Capacitance
(VBE = 1.0 Vdc, IC = 0, f
Cibo
-
-
4.0
pF
ts
-
-
13
ns
Turn-On TIme
(VCC = 3.0 Vdc, VBE(off) = 1.5 Vde,lc = 10 mAde, 'Bl = 3.0 mAde)
ton
-
-
15
ns
Turn-Off Time
(VCC = 3.0 Vde, IC
toff
-
-
20
ns
0.9
0.8
-
1.0
1.0
-
-
Characteristic
Typ
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC = 10 mAde, VCE = 10 Vdc, f = 100 MHz)
= 100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(VCC = 10 Vdc, IC = 'Bl
•
=
=
IB2 = 10 mAde)
10 mAde, IBl = 3.0 mAde, IB2
=
1.5 mAde)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
hFE1/hFE2
MD2369A, MD2369AF
MD2369B, MD2369BF
(lC = 3.0 mAde, VCE = 1.0 Vdc)
Base-Emitter Voltage Differential
(lC = 3.0 mAde, VCE = 1.0 Vdc)
IVBE1-V BE21
MD2369A, MD2369AF
MD2369B, MD2369BF
Base-Emitter Voltage Differential Gradient
(lC = 3.0 mAde, VCE = 1.0 Vdc,
TA = -55to + 125'C)
mVde
5.0
10
-
",VI"C
.1(VBE1-VBE2)
.1TA
-
MD2369A, MD2369AF
MD2369B, MD2369BF
-
10
20
-
(2) Pulse Test: Pulse Width", 300 p.S, Duty Cycle'" 2.0%.
(3) The lowest hFE reading is taken as hFEl for this test.
RGURE 1 -
STORAGE TIME TEST CIRCUIT
+10 V
+S,on
0-
-
980
+--.......-() Scope
-500
-4.0 V
Pul. Width = 300 ns
.
tf";;I.0n.
Duty Cycle";;2.0%
FIGURE 3 - TURN-OFF TIME
RGURE 2 - TURN-ON TIME
200
100
10-
200
'e/ ' B,'0
TJ·25 0 e
.......
70
50
!
;e
30
20
VCC' 10 V
leilB' 10
TJ' 250 C
i"-.,
70
50
/
.......
1,@VCC'3.0V "
t'-
;::
~veC"0V
]:
30
.......
~
.
20
~~
10
w
...... ~
If
7. 0
5. 0
Id @V~E(Offr 1.~ V
3.0
l
2.0
3.0
5.0 7.0
10
20
30
.......
10
7.0
5.0
2.0
1.0
"-
100
50
I'-
3.0
2.0
1.0
70 100
-
2.0
......r-....
I,
3.0
5.0
7.0
10
20
30
IC. COLLECTOR CURRENT ImAI
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-318
50
70 100
MD2369, A, B, AF, BF, MQ2369
FIGURE 4 -
Vcc~
vcc
270
IT
-
+10.75V~
--r-
I
__ J
-1.5 V
0-
I
-
< 1,0 ns
FIGURE 7 -
CAPACITANCE
5.0
~ 2.0k
TJ = 25°C
r-
...
z
~
2.0
-
Ii:
...
t= 100MHz
1.0 k
'"o
~ 700
Cob
".
z
;i\
~
~
.b
to
,.:.
~
o. 7
300
..,'":::>
0.5
1.0
2.0
5.0
10
20
50
./
500
:;:
,:i 1.0
0.2
•
V
'"
,.: 200
1.0
2.0
5.0 7.0
3.0
VR. REVERSE VOLTAGE IVOLTS)
FIGURE 8 -
--
t-
r-- "-
0.05 0.1
BANDWIDTH PRODUCT
o
)b
U
0.5
CURRENT-GAIN -
VC~ = 110 V I
~
t:::>
Q.
~
3.3 k
_+-----0 Scope
Pulse Width::: 300 ns
tf~1.0ns
Duty Cycle ~ 2.0%
Duty Cvcle~2.0%
3.0
3.0 V
~
-4.15 V
Pulse Width.: 300 ns
FIGURE 6 -
~
270
I
3.3 k
--
tr
TURN-OFF TEST CIRCUIT
3.0V
......- -......-0 Scope
'I' cs < 4.0 pF
IO.75V
o
FIGURE 5 -
TURN-ON TEST CIRCUIT
10
20
70 100
50
30
IC. COLLECTOR CURRENT IrnA)
DC CURRENT GAIN
FIGURE 9 -
1.4
-
"ON" VOLTAGES
TJ = 25°C
1.2
~
1.0
~
O.S I--
~
0
w
VSEI ..!)@ ICIIB - 10
...
VSEloo)@VCE 1.0V-
'"
S 0.6
0
>
,,: 0.4
o
0.2
111110.5
1.0
~
COLLECTOR SATURATION REGION
1.0
~
w
FIGURE 11 -
i
0.8
~
> 0.6
IC= lOrnA
w
'"t-
30rnA t - - 100 rnA
u
~w-
200 rnA I--
~
0.4
~
""-
0.2
0
0.05
0.1
0.2
~w
...
20
0.5
1.0
2.0
50
200
J
+1.0t--t-t+ t++t
IlllIt---t--t-t+t++tt---t--t-tI++
11+++
III+---j
I
- -U)cl
10
20
50
J...l:::!:±:11r
-550C to 250C -
-1.0t-t-1-1-t+ttt---+--I-++-t1+tt--t-+-t-1+1+1+IHIII+-I--4
250C to 1500C
~!j~8~V~B~to~rv~S~E~~~~lU~=t~~flltllin~~~
0.2
lB. BASE CURRENT IrnA)
0.5
1.0
2.0
5.0
10
20
IC. COLLECTOR CURRENT IrnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-319
/~
iLcEllt)+++-ttttt--t-t_25r-0t-Ct-t0t111±50..
0C..
O~~~~~~~~~~~~~~~~~~~
i _3.0~m~::::+--:+-t-ffiFM1f~--":'!'=
~-5itr
5.0
100
TEMPERATURE COEFFICIENTS
~ -2.0~
~ r-
..,W
>
~
....... t-
j\,
0
8
10
..,o
t-
"'
5.0
U +2.0 "-"A-prpLrIE""STFOrrR-IC-/I~B"-h~F-E/r3.0'--""TTr--'---'-'I~I"I-'-1""111"--1---'
TJ = 25°C
0
'"
~
0
I
2.0
IC. COLLECTOR CURRENT IrnA)
IC. COLLECTOR CURRENT 1m A)
FIGURE 10 -
,/
VCElsa!)@ ICIIB = 10
0.2 t -
50
rrrr100
200
MAXIMUM RATINGS
Unit
60
Vdc
MD2904, A, AF
MD2905, A, AF
MQ2904, MQ2905A
Symbol
Collector-Emitter Voltage
VCEO
40
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAde
Rating
Collector Current -
Continuous
One Ole
•
MD2904A.AF
MD290SA.AF
MQ2905A
MD2904
MD2905
MQ2904
Total Device Dissipation
@TA= 25·C
M D2904.A. M D2905,A
MD2904F,AF. MD2905.AF
MQ2904. MQ2905A
Derate above 25·C
MD2904.A. MD2905,A
MD2904.F,AF. MD2905.AF
MQ2904. MQ2905A
Po
Total Device Dissipation
@TC = 25·C
MD2904.A. MD2905,A
MD2904F,AF. MD2905F,AF
MQ2904, MQ2905A
Derate above 25·C
MD2904,A, MD2905,A
MD2904F,AF, MD2905,AF
MQ2904, MQ2905A
Po
Operating and Storage Junction
Temperature Range
TJ, Totg
AIiDie
Equal Power
mW
575
350
400
625
400
600
3.29
2.0
2.28
3.57
2.28
3.42
mWrC
Watts
1.8
1.0
0.9
2.5
2.0
3.6
10.3
5.71
5.13
14.3
11.4
20.5
MD2904,A
MD2905,A
CASE 654-07, STYLE 1
DUAL
MD2904,AF
~
MD2905,AF
~ 1
CASE 610A-04, STYLE 1 9
DUAL
M02904
M02905A
CASE 607-04, STYLE 1
QUAD
AMPLIFIER TRANSISTORS
mwrc
PNP SILICON
Collector 1 7 Collector
CASE6~07,STYLE1
·C
-65 to +200
0
PIN CONNECTION DIAGRAMS
2
Base
PNP
6
Base
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
MD2904,A. M D2905,A
MD2904,AF. MD2905,AF
MQ2904, MQ2905A
Thermal Resistance, Junction to Ambient
M D2904,A, M D2905,A
MD2904,AF. MD2905,AF
MQ2904, MQ2905A
One Die
All Die
Equal Power Unit
97
175
195
70
87.5
48.8
304
500
438
280
438
292
Junction to
Ambient
Junction to
Case
84
44
0
0
0
Emitter 3
5 Emitter
CASE 610A-04, STYLE 1
1M5
Base
Emitter 2
·CIW
R8JA(1)
7 Collector
~
·CIW
R8JC
Coupling Factor
MD2904,A, MD2905,A
MD2904,AF. MD2905,AF
MQ2904, MQ2905A (Q1-Q2)
(Q1-Q3 or Q1-Q4)
Collector 9
Base
4 Emitter
%
75
57
55
(11 RfJJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
40
60
-
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
MD2904, MD2905
MD2904A, MD2905A
Collector-Base Breakdown Voltage
(lC = 10 ~dc. IE = 0)
V(BR)CBO
60
-
Emitter-Base Breakdown Voltage
(IE = 10 ~dc, IC = 0)
V(BR)EBO
5.0
-
-
-
Collector Cutoff Current
(VCB = SO Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 150·C)
ICBO
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-320
-
Vdc
Vdc
Vdc
~dc
0.020
30
MD2904, A, AF, MD2905, A, AF, MQ2904, MQ2905A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
30
nAde
-
-
MD2904
MD2904A
MD2905
MD2905A
20
40
35
75
50
70
70
150
MD2904
MD2904A
MD2905
MD2905A
25
40
50
100
75
75
100
175
MD2904
MD2904A
MD2905
MD2905A
35
40
75
100
90
90
110
200
-
Emitter Cutoff Current
(V BE = 3.0 Vde, IC = 0)
lEBO
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 0.1 mAde, VCE
(lC
=
hFE
=
10 Vde)
=
1.0 mAde, VCE
=
10 Vde)
-
-
-
-
(lC
=
10 mAde, VCE
(lC
=
1S0 mAde, VCE
=
10 Vde)
MD2904.A,
MD2905,A
40
100
90
200
120
300
(lC
= SOO mAde, VCE =
10 Vde)
MD2904
MD2904A
MD290S
MD290SA
20
40
30
50
60
80
130
150
-
-
-
0.25
0.5
0.4
1.6
-
0.88
1.0
1.3
2.6
f,-
200
320
-
Cobo
-
5.8
8.0
pF
Cibo
-
16
30
pF
ton
-
ns
-
12
ns
tr
-
35
ns
toff
-
130
ns
ts
-
-
45
td
100
n.
tl
-
-
40
ns
10 Vde)
Collector-Emitter Saturation Voltage
(lc = 1S0 mAde, IB = 1S mAde)
(lc = 500 mAde, IB = 50 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAde, IB = 15 mAde)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
•
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Produet(3)
(lC = 50 mAde, VCE = 20 Vde, I = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
=
=
100 kHz)
Input Capacitance
(VBE = 2.0 Vde, IC
= 0, I =
100 kHz)
0, I
MHz
SWITCHING CHARACTERISTICS
Turn-On TIme
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
(VCC = 30 Vde, VBE
IC = 150 mAde,
IB1 = 15 mAde)
= O.S Vde,
(VCC = 30 Vde,
IC = 150 mAde,
IB1 = IB2 = 15 mAde)
(2) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
(3) Pulse Test: Pulse Width", 300 p.o, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-321
MD2904, A, AF, MD2905, A, AF, MQ2904, MQ2905A
FIGURE 1 -
DC CURRENT GAIN
2.0
1.0
-~-
'"'"
1--1-
--- -
-I-
--~
~~
--
--~
-- - -- .-- --
0.7
0.5
-.~
~
-
+2SO C
--
r--..
~i'
-- -- -
~
~
r-
TJ =+1750 C
--
...
~
~
...
~
~
- '.
... ~
r,
'"
r-...
~
~
r\:
55°C
.... ....
~
--VcE-IOV
~--- VCE - 1.0V
OJ
i'-
........
....
r,\
0.2
0.5
0.7
1.0
2.0
5.0
3.0
7.0
10
30
20
50
70
100
200
300
500
Ie. COllECTOR CURtlENT !mAl
FIGURE 2 -
FIGURE 3 - TEMPERATURE COEFFICIE·NTS
"ON" VOLTAGES
+2.0
'III I III I
I~F~t!I~T~
+1.0
i
ssoc TO +25°C
+25°C TO +175°C
~
~
I III I
1
p
IIF~v"1111
~i+25°C
I ilTTn
TO +l7SoC
-1.0
8
.j
-2.0
1+++H--+-+++-+++-I+H-+-HI-I-f..+1H+J.l-h~.I'+-l-+I
0.4
I-tt+l+-++++-+VCEISAT} @lcll,
O~~~UU-L~~~LU_LUI~~-LU-U
0.5
1.0
2.0
5.0
10
20
.J..I.+
-rnris~i
/'''
10
50
100
200
-3.0
0.5
500
,e:.
'1·
1.0
2.0
5.0
10
50
20
100
200
500
Ie. COLlECTOR CURtlENT (mAl
Ic, COLLECTOR CURRENT lmAl
NOISE FIGURE
vCE = 10V. TA = 25°C
FIGURE 5 - SOURCE RESISTANCE EFFECTS
FIGURE 4 - FREQUENCY EFFECTS
10
VCE' 10 Vdc++1+1+++--H-+++++H++-++t++H
TA =250 C
5.0 HH--+++ttttt-H-t-+t++Ht-+-t--H-ttt-tti
B.O
""
...
::>
;.:
'"...
0:
f!!
0
po..,H-+-+++H++-+-t--I.-+ Ic
z
-l.b rnA
f"-t-
Rs - 0.7k!)
t---
111111 I
II 1111
t=l.OkHz
I
~
4.0 1-N--+-++-I+l+l-+-H-I-H-++H--I-+-+-+++HtI
2.0
\1111
IC =10,.A
\
&.0
\1
\
I\~
4.0
r\
1\1\
u.'
z
2.0
1.0 f-H-f=t't''1'ti+l-+-Hf+!+f+l+-++-+-+++~
lOO,.A
Ic-loo~
"'"....,lI
l.;V
~I\
V
II
V
W
VCE" 10Vdc
j...-~
IrnA
O~~~~~LJ~~UI"~I"wlll~~I~~~
0.1
0.2
0.5
1.0
2.0
5.0
t, FREQUENCY (kHz)
10
20
50
o0.1
100
0.2
0.5
5.0
10
20
1.0
2.0
RS. SOURCE RESISTANCE (k OHMS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-322
Trl~OFI
T1~
I-I-+-++++++++-HH-+ Rs -1.2 k!) +-+4-+4+++1
50
100
MD2904, A, AF, MD2905, A, AF, MQ2904, MQ2905A
FIGURE 6 - CURRENT·GAIN BANDWIDTH PRODUCT
600
III
:I:
FIGURE 7 - CAPACITAII!CE
311
I
VCE - 20Vd,
1 - 100 MHz
TJ - 25°C
~400
t;
::>
c
'"g;
:I:
...w
"..
1;200
~
:i
....
l,../
z
~
Z
.:~
r--
--
I
~J ~ I~~
Cjb- l"- t-
r---- ........
r---- ........
10
,
t-
I ' 100 kHz
r--..... [)~
~
...c 7.0
/"
/
~100
I"-
20
.....
5.0
r"
80
a:
B 60
.t:
2.0 3.0
5.0 7.0 10
IC.COLLECTOR CURRENT IMAI
0.5 0.7 1.0
FIGURE 8 -
20
30
50
3.0
D.2
TURN ON TIME
I I /I
I, ...
-;;;
100
!ii !
70
,
I
.5
t"
,
,
50
"
30
20
5.0 7.0
10
r-.
20
I
,
.L.
300
...
~
'"
30
50 70 100
Ie, COLLECTOR CURRENT (mAl
-
200
~
-
300
200
QA, ACTIVE REGION CHARGE
II ,II
100
5.0 7.0
500
20 30
so 70 100
Ie, COLLECTOR CURRENT (mAl
10
FIGURE 11 -
300
~
30
20
10
IcilB=10 _
~
...t--..
...
l.rr
lellB = 20
'liI'
10
,
30
50 70 100
Ie, COLLECTOR CURRENT (mAl
200
300
100
.::
50
"
70
Ic/lB - 20
Ielis - 10
.
,
-
.......
20
I
20
VCc-JOV _
IBI =IB2
TJ =25°C -
30
III
5.0 7.0
'";:::
~
I"'::-
ml, ....
500
I I I
,
~
f:::
~ 70
50
300
FALL TIME
200
IBI = IB2
TJ 25°C
! 100
200
500
1',-I,-I/SI1
~
J
"
700
...
I'.
II
200
.1
QT, TOTAL CONTROL CHARGE
~ 500
,
III
300
I
VCC=30V'
TJ' 2S"C
IL
~
1000
FIGURE 10 - STORAGE TIME
500
•
(,.001"""
2000
~
10
CHARGe DATA
3000
----VCC - 30 v. VBElofll - 2.0 V- - VCC-l0V. VBEloff)-OV lellB - 10
TJ = 25°C
200
~
D.1 1.0
2.0 3.0
S.O 7.0
VR. REVERSE VOLTAGE IVOLTS)
5000
300
10
u.s
FIGURE 8 -
500
;:::
0.3
10
5.0 7.0
SOO
10
20
30
50 70 100
Ie. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-323
200
300
500
MD2904, A, AF, MD2905, A, AF, MQ2904, MQ2905A
FIGURE 12 - DELAY AND RISE
TIME TEST CIRCUIT
P.W. > 200 ns
tr '" 2.0 ns
Duty Cycle .s; 2.0%.
FIGURE 13 - STORAGE AND FALL
TIME TEST CIRCUIT
P.W.
-3D V
~
1.01JI
-3~
V
tr"';;; 2.0 ns
Duty Cycle'" 2.0%.
200
200
Scope
Scope
1.0 k
•
-3.0 V
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-324
MAXIMUM RATINGS
Rating
MD32S0, A, AF
MD32S1, A, AF
MQ32S1
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAdc
Collector Current -
Continuous
Total Device Dissipation
@TA ~ 25·C
MD3250,A. MD3251,A
MD3250,AF. MD3251,AF
M03251
Derate above 25·C
MD3250,A. MD3251.A
MD3250,AF. MD3251,AF
M03251
PD
Total Device Dissipation
@ TC ~ 25·C
MD3250,A. MD3251,A
MD3250.AF. MD3251,AF
M03251
Derate above 25·C
MD3250,A. MD3251.A
MD3250,AF. MD3251,AF
MQ3251
PD
One Die
All Die
Equal Power
575
350
400
625
400
600
3.29
2.0
2.28
3.57
2.28
3.42
mW
mWf"C
Watts
1.8
1.0
0.9
2.5
2.0
3.6
10.3
5.71
5.13
14.3
11.4
20.5
MD3250,A
MD3251,A
CASE 654-07, STYLE 1
DUAL
MD3250,AF
~
MD3251,AF
~ 1
CASE 610A-04, STYLE 1 9
DUAL
MQ3251
CASE 607-04, STYLE 1
QUAD
AMPLIFIER TRANSISTORS
mWf"C
Operating and Storage Junction
Temperature Range
TJ. Tstg
PIN CONNECTION DIAGRAMS
Collector 1 7 Collector
CASE 654-07. STYLE 1 ( ) -
Symbol
Characteristic
Thermal Resistance. Junction to Ambient
MD3250.A. MD3251,A
MD3250,AF. MD3251.AF
M03251
PNPSILICON
·C
-65 to +200
THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case
MD3250.A. MD3251.A
MD3250.AF. MD3251.AF
M03251
14
One Die
·CIW
RruC
97
175
195
Collector 9
·CIW
280
438
292
7 Collector
~
70
87.5
48.8
RruA(l)
304
500
438
2
Base
All Die
Equal Power Unit
B".
,M.
Emitter 2
PNP
Emitter 3
6
Base
5 Emitter
CASE 610A-04. STYLE 1
B".
4 Emitter
Junction to Junction to
Ambient
Case
Coupling Factor
MD3250,A. MD3251,A
MD3250,AF. MD3251,AF
M03251 (01-02)
(01-03 or 01-Q4)
%
84
75
57
55
44
0
0
0
(1) R6JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA ~ 25·C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lc ~ 10 mAdc. IB ~ 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC ~ 10 pAdc. IE ~ 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE ~ 10 pAdc. IC ~ 0)
V(BR)EBO
Characteristic
Typ
Max
Unit
-
Vdc
50
-
-
Vdc
5.0
-
-
Vdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 40 Vdc. IE ~ 0)
(VCB ~ 40 Vdc. IE ~ O. TA
ICBO
~
150·C)
Emitter Cutoff Current
(VBE ~ 3.0 Vdc. IC ~ 0)
lEBO
-
-
-
10
10
nAdc
pAdc
-
-
10
nAdc
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-325
•
MD3250, A, AF, MD3251, A, AF, MQ3251
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Max
Unit
Min
Typ
MD3250,A,AF
MD3251,A,AF
25
50
75
100
, MD3250,A,AF
MD3251,A,AF
MQ3251
50
80
80
82
170
170
MD3250,A,AF
MD3251,A,AF
25
50
35
75
MD3250,A,AF
MD3251,A,AF
MQ3251
50
100
100
87
180
180
MD3250,A,AF
MD3251,A,AF
MQ3251
50
100
100
S2
1S0
1S0
300
MD3250,A,AF
MD3251,A,AF
MQ3251
15
30
30
50
SO
SO
-
-
0.11
0.18
0.25
0.5
0.6
-
0.78
0.88
O.S
1.2
200
250
300
600
600
600
-
Cobo
-
2.5
6.0
pF
Cibo
-
6.0
8.0
pF
O.S
O.S
-
1.0
1.0
-
-
3.0
5.0
5.0
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 pAdc, VCE
(lc
•
= 100 pAde, VCE =
5.0 Vde)
(lC
=
100 pAde, VCE
= 5.0 Vde, TA =
(lC
=
1.0 mAde, VCE
=
(lC
(lC
=
hFE
= 5.0 Vdc)
10 mAde, VCE
=
= 50 mAde, VCE =
-55°C)
5.0 Vde)
5.0 Vde)
5.0 Vdc)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
-
-
150
300
-
150
300
-
Vdc
Vde
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
=
=
100 kHz)
Input Capacitance
(VBE = 1.0 Vde, IC
= 0, f =
100 kHz)
0, f
fT
MD3250,A,AF
MD3251,A,AF
MQ3251
MHz
MATCHING CHARACTERISTICS (MD3250.A.AF lit MD3251,A,AF ONLY)
DC Current Gain Ratio(3)
(lC = 100 pAde, VCE = 5.0 Vdc)
(lc = 1.0 mAde, VeE = 5.0 Vde)
hFE1/hFE2
Base-Emitter Voltage Differential
(lC = 100 pAde, VCE = 5.0 Vde)
(lC = 10 pAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
IVBE1- VBE21
Base-Emitter Voltage Differential Change Due to Temperature
(lC = 100 pAde, VCE = 5.0 Vde, TA = -55 to +25°C)
(lC = 100 pAde, VCE = 5.0 Vde, TA = +25 to + 125°C)
alvBE1 N BE21
-
mVde
-
(2) Pulse Test: Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
(3) The lowest hFE reading is taken as hFE1 for this ratio.
MOTOROLA SMAlL-SIGNAL TRANSISTORS, FETs AND DIODES
3-326
-
mVde
0.8
1.0
MD3250, A, AF, MD3251, A, AF, MQ3251
FIGURE 2 - CURRENT·GAIN BANDIMDTH PRODUCT
FIGURE 1 - CAPACITANCE
100 0
0
TJ = 25°C
t; SOof-VCE = 20 Vdc
=>
I-f 6001--
7.0
~
...zw
-I-
5.0
............
,.....
"'"
~
~ 3.0
~
u~
1= 100 MHz
TJ = 25°C
g
z. 0
"....c
Cib
~400
"z
,.....
Y
~
;;:
Cob
<;> 200
~
::;
t-
VV
...=>
1.0
0.5
0.2
1.0
2.0
5.0
10
20
100
0.2
50
~
1/
V
./
z
............
1.0
0.5
---
0.3
I..-
0.5
2.0
1.0
3.0
5.0
7.0
10
20
•
NOISE FIGURE VARIATIONS
IVCE
= 6.0 V, TA = 2SoC)
FIGURE 3 - EFFECTS OF FREQUENCV
10
II
f = 1.0 kHz
'\.
;;;
;: 4.0
'"w
co
;;;
RS=4.3kU
IC = 10,..A
~
~. 2.0
'"~
.......
/
..:
z
........
2.0
RS= 1.6kU
IC = 100,..A
o
0.2
0.4
1.0
2.0
4.0
10
20
40
o
0.1
100
II.
rI
/1
10,..A
~
4.0
rJ.
IC=1.0rnAI
W
"
0.1
6.0
to
;;;
w
~
1\
~
"- ......
=>
oz
II
8.0
.
-,
FIGURE 4 - EFFECTS OF SOURCE RESISTANCE
6.0
\
............. ~
~
h
V
r....... V
V
r/
100,..A
~
--0.2
0.4
1.0
2.0
4.0
10
20
40
100
RS, SOURCE RESISTANCE IkOHMS)
f, FREQUENCY 1kHz)
FIGURE 5 - DC CURRENT GAIN
- "-
2. 0
TJ = 125°C
~
~
"
o
......
t
1. 0
~
;;:
~
"-
......... '\..
~
~
-~50C
o.7
~
to
....
~ o. 5
".....
~
u
c
NORMALIZEO AT IC = 10 rnA, VCE = 1.0 V
83 - M03250,A,F,AF
~ o. 3
O. 2
0.1
0.2
0.3
05
0.7
II
10
TYPICr hFE
i
167 - MOr251.A'i.AF,
2.0
3.0
7.0
10
IC, COLLECTOR CURRENT IrnAI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-327
~
\
rTl I
50
~
20
30
50
MD3250, A, AF, MD3251, A, AF, MQ3251
FIGURE 7 - TEMPERATURE COEFFICIENTS
FIGURE 6 - "ON" VOLTAGE
1.0
0.8
~o
jJ
1.2
TJ = 250C
'-'
II II
VeE( ..,
@
~
Iclle
;; 0.8
fo-~
~
~
8
w
~
O. 4
:>
o. 2
-
VCE(sat) @Ic/le = 10
II
o
0.5 0.7
•
f0-
3.0
5.0
MD3250
?
7.0
o
30
2.4
25mAH
\
t--
• j
8
0.05
0.1
2.0
5.0
7.0
20
10
30
-
50
MD3251. MQ3251
II
\
I I II
TJ=250C
o
w
'"
~
5Om~
is
>
ffi
0.6
~ 0.4
cr.
--
0.2
0.5
1.0
2.0
Ie. BASE CURRENT (mA)
3.0
./
X .... ,/
?s;.[.o 25~C
I II
1.0
1~50el
? 0.8
\
\
-- -
for VeE
~
o~_
::
~ 0.4
iw
0
0.02
i
Ove
1.0
>
~
>
2.0
2.8
0.5 0.7
rr
w
~ 02
1.6
~
50
10.6
1.2
7
IC. COLLECTOR CURRENT (mA)
iJ! J5
le= 2.0mA_ 10mA
250 '0
0.8
~
....
II II
0.8
cr.
o
1.1-
FIGURE 8 - COLLECTOR SATURATION REGfON
w
'"~
20
10
IC. COLLECTOR CURRENT (mA)
2.0
1.0
1.0
~o
-550C '0 250C
u
w
>
25 0C '0 1250C
$ 0.4
? 0.6
'"
~
o
Io~n! VCE(l,)
.§ 0.4
10
'APPLIES FOR Iclle '" hFE/5
t;
j
le=2.0mA
,
10mA_
~25mA
~50mA
\
r-....
0.2
t---
8
\
\
r-...
-r-
W
'-'
5.0
10
>
20
0.01
0.02
0.05
0.1
0.2
0.5
1.0
lB. BASE CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-328
2.0
5.0
10
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
500
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
One Die
Both Die
Equal
Power
575
3.29
625
3.57
1.8
10.3
2.5
14.3
Po
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
CASE 654-07, STYLE 1
mW
Collector 1
mWrC
mWrC
B.S.~B".
°c
Emitter 3
THERMAL CHARACTERISTICS
Characteristic
Symbol
One Die
Both Die
Equal Power
ROJC
97
70
°CIW
ROJA(l)
304
280
°CIW
Junction to
Ambient
Junction to
Case
84
44
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Unit
7 Collector
2~6
Watts
-65 to +200
TJ, Tstg
MD3409
MD3410
5 Emitter
DUAL
AMPLIFIER TRANSISTORS
•
NPN SILICON
Refer to MD2218 for graphs.
Coupling Factors
%
(1) ROJA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VCB
(VBE
(IE
=
(lc
(lc
=
=
10 pAde, IC
= 50 Vde,
= 50 Vde,
= 3.0 Vde,
= 0)
= 0)
= 0)
10 pAde, IB
10 pAde, 'E
IE
IE
IC
= 0)
= 0, TA =
= 0)
V(BR)CEO
30
-
-
Vde
V(BR)CBO
60
-
-
Vde
V(BR)EBO
5.0
-
-
'CBO
-
10
10
nAde
pAde
-
-
10
nAde
20
30
40
50
40
50
60
65
100
120
160
200
-
0.09
0.15
Vde
0.7
0.85
Vde
200
250
-
MHz
Cobo
-
3.5
8.0
pF
Cibo
-
15
25
pF
-
-
-
-
1.6
0.8
2.0
1.0
150°C)
lEBO
-
Vde
ON CHARACTERISTICS
DC Current Gain(2)
(lc = 10 pAde, VCE = 10 Vde)
(Ie = 100 pAde, VCE = 10 Vde)
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
hFE
MD3410
Both Devices
Both Devices
Both Devices
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
=
(Ie
=
10 mAde, IB
10 mAde, 'B
=
=
1.0 mAde)
1.0 mAde)
VCE(sat)
VBE(sat)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 20 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance
Input Capacitance
fT
= 10 Vde, IE = 0, f = 1.0 MHz)
= 0.5 Vde, IC = 0, f = 1.0 MHz)
(VCB
(VSE
MATCHING CHARACTERISTICS
Sase-Emitter Voltage Differential Change Due to Temperature
MD3409
(lc = 100 pAde, VCE = 10 Vde,
MD3410
TA = -55°C to +25°C)
MD3409
(lc = 100 pAde, VCE = 10 Vde,
MD3410
TA = + 25°C to +125°C)
mVde
[VSE1-VSE2[
-
(2) Pulse Test: Pulse Width"" 300 !J1l, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-329
-
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.5
Adc
Collector Current -
Continuous
All Die
Equal Power
One Die
•
Total Device Dissipation
@TA= 25"C
MD3467
M03467
Derate above 25"C
MD3467
M03467
Po
Total Device Dissipation
@TC = 25"C
MD3467
M03467
Derate above 25"C
MD3467
MQ3467
Po
MD3467
MQ3467
mW
600
400
650
600
3.42
2.28
3.7
3.42
MD3467
CASE 654-07, STYLE 1
DUAL
mWI"C
Watts
2.1
1.0
MQ3467
CASE 607-04, STYLE 1
QUAD
3.0
4.0
14
mWI"C
17.2
22.8
12
5.71
Operating and Storage Junction
Temperature Range
TJ, Tstg
AMPLIFIER TRANSISTORS
"C
-65 to +200
PNP SILICON
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
MD3467
M03467
Thermal Resistance, Junction to Ambient
MD3467
M03467
One Die
All Die
Equal Power Unit
RruC
83.3
175
58.3
43.8
292
438
270
292
"CIW
RruA(I)
Junction to Junction to
Ambient
Case
Coupling Factor
MD3467
M03467 (01-02)
(01-03 or 01-04)
(1) A8JA
IS
PIN CONNECTION DIAGRAMS
"CIW
Emitter 3
%
40
0
0
85
57
55
measured with the deVice soldered mto a tYPical prmted
Circuit
5 Emitter
CASE 654·07
STYLE 1
CASE 607·04
STYLE 1
board.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Cheracterlstic
Symbol
Min
Typ
Max
Unit
Coliector·Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
40
-
-
Vdc
Emitter·Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0, TA = 100"C)
ICBO
-
-
10
pAdc
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
-
-
100
nAdc
OFF CHARACTERISTICS
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-330
MD3461, MQ3467
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
hFE
20
Collector-Emitter Saturation Voltage
(lc = 500 mAde, IB = 50 mAde)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(lC = 500 mAde, VCE
=
-
-
0.32
0.5
Vde
-
0.95
1.2
Vde
fy
150
220
-
MHz
Cobo
-
8.5
20
pF
Cibo
-
22
80
pF
-
1.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
=
140 kHz)
=
0, f
SWITCHING CHARACTERISTICS
Delay Time
= 2.0 Vde,
= 50 mAde)
td
-
7.0
10
ns
tr
-
17
30
ns
(VCC = 30 Vde, IC = 500 mAde,
IBI = IB2 = 50 mAde)
ts
-
58
80
ns
tf
-
14
30
ns
(VCC = 30 Vde, VBE
IC = 500 mAde, IBI
Rise Time
Storage Time
Fall Time
(2) Pulse Test: Pulse Width", 300 JLS, Duty Cycle'" 2.0%.
FIGURE 1 - DC CURRENT GAIN
200
II
VCEJl.O~
TJ ~ I~~
fact;
zlOO
;;:
'"
II
i,..-/
~
-55°
30
........
o
ii 0.8
..... ~~
V
..- f--"
~
>
...
~
~
~
0.6
~
0.4
iii
I"-
o
g
~
-I
8
>
2.0
5.0
50
100
200
10
20
IC, COLLECTOR CURRENT (mAl
Ie = 20 mA
100mA
,
\
0
0.2
500 1000
FIGURE 3 - "ON" VOLTAGE
1.0
>
;;; o.a f - - Vaf(.. tl!I~=I~
0.6
-
VaElonl@ VCE = 1.0 V
~ I-"
-
ffi
I-
-
VC~( ..tl JIcAa _110
L
1
30
200
l-
-550C to 250C
§
o
'-'
w
~-O.8
II:
it!
!-1.6.
....+--'"
ova for VaE
....
-2.4
10
500 700 1000
l~oC
II
?:
50 70 100
200 300
IC, COLLECTOR CURRENT (mAl
'i;>(1.
25°C to 1000
i3
I
20
100
I
f--- .'ovc'for VC'E("~1
~
~ 0.4
50
2.0
5.0
10
20
la, BASE CURRENT (mAl
1000Cto1750C
.§ +0.8
~
>
0.2
1.0
3;
o
is
'"
I
'Applies for leila.; hFE/4
G
TJ=250C
1.2
'"~
0.5
1\1.0 A
400mA
'"
TJ = 25°C
FIGURE 4 - TEMPERATURE COEFFICIENTS
+1.6
1.4
~
\ II
II
1111
1111
0.2
~
20
1.0
II
II
:;
5'" 10 .... ...,-25°C
'"
a50
FIGURE 2 - COLLECTOR SATURATION REGION
in 1.0
20
30
II100
-
,,:~
~OOOC to 175°C
\ 25°C to 1000 e
50 70
200 300
Ie, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-331
to 250C
I I
I I
500 700 1000
•
MD3467, MQ3467
FIGURE 5 - ACTIVE REGION SAFE OPERATING AREA
2.0
0:
'"....
~
1. 0
~ O•6
is
a:
.'"
O.4f--- TJ = 200°C
a:
O•
2
a:
de
............
---Bonding Wire Limit
Second Breakdown limit
~ 1
j o.
...........
~(No .. : Thermal Limi..tio", noed 10 be
80.06 f - '=;0.04
ineorpora..d in SOA Curve.!
0.02
2.0
•
4.0
6.0
8.0 10
20,
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTSI
FIGURE 6 - TURN-oN TIME
FIGURE 7 - RISE AND FALL TIME
200
100
~
"-
0
-..::
"
0
0
!
~ i'- .........
" i H{l
~
0
ICllj = lr
'-
50 70 100,
200 300
IC, COLLECTOR CURRENT (mAl
10
10
500 700 1.0 k
20
30
0
200
I -I--I-TJ=250C
k> rc=
-
-
)ICIIS=20
ICIIS=If('
0
---
i-TJ= 150dc
100
]
--~ t~
"'
'";:::........
0
lSI = IS2
1',= 1..118 It
20
10
20
30
SOO 700 1.0 k
". ""
70
f-- f-TJ = 2SOC
...... "
50
r-.. r.....
1'....
Ic/18= 10 ~
20
10
10
500 700 1.0 k
-
'I'-.
::: 30
"
50 70 100
200 300
IC, COLLECTOR CURRENT (mAl
f'.. I""
~.
:t
~
0
200 300
50 70 100
COLLECTOR CURRENT (mAl
FIGURE 9 - FALL TIME
FIGURE 8 - STORAGE TIME
400
1:7
";f ......
Vcc = 30 V
I"
If
~
"-.i' .......
20
2.0 V"",,
=1500C
50
:E
;:::
-TJ=2SOC
-T
10
"'
""'-'lril!lVCC=10V
Id iI!IIVSEI(O"1 =
30
.=;
Irll!> VCC = 30 V
~
"I'--
20
~~.
100
~
---
~~
TJ = 25°C
"-
0
10
10
200
Icils = 10
I\.
40
Icils = 20
-
r-...
30
f'~
......
200 300
50 70 100
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-332
t<~
lSI = 182
20
I..(
r-......
VCc= 110 V
f-Tr lSOOC
500 700 1.0 k
MD3467, MQ3467
FIGURE 11 - CAPACITANCE
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
70
-30 V
+27.7 V
IC=500mA
lSI = IS2= 50mA
30011
Rise Time ~5 ns
Pulse Width =. 0.5 IlS
Duty Cycle = 2%
0.1
~
1
-30U
"F
5011
---
30011
lN9160r
.quiv.
~
50
5911
':"
Tr 2SOC
"\
~
1'"
In
10
7.0
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0
4.0 6.0
VR. REVERSE VOLTAGE (VOLTS)
Out
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-333
IIt
-
20
40
•
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
65
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
1.0
Adc
Collector Current -
Continuous
One Die
•
Total Device Dissipation
@TA= 25'C
M03725
M03725F
MQ3725
Derate above 25'C
M03725
M03725F
MOO725
Po
Total Device Dissipation
@TC = 25'C
MD3725
M03725F
MQ3725
Derate above 25'C
MD3725
MD3725F
MQ3725
Po
MD3725, F
MQ3725
MD3725
CASE 654-07, STYLE 1
DUAL
AIiDie
Equal Power
mW
SOO
350
400
650
400
600
3.42
2.0
2.28
3.7
2.28
3.42
2.1
1.25
1.0
3.0
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
mWrC
MD3725F
CASE 610A-04, STYLE 1 ~
DUAL
~'
Watts
M03725
CASE 607-04, STYLE 1
QUAD
9
AMPLIAER TRANSISTORS
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg
NPN SILICON
Collector 1 7 Collector
CASE 654-07, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
M03725
M03725F
MOO725
One Die
'CIW
83.3
140
175
Thermal Resistance, Junction to Ambient
M03725
MD3725F
MQ3725
2
Base
All Die
Equal Power Unit
R(lJC
Collector 9
'CIW
2\!2
500
433
7 Collector
~
58.3
70
43.8
R(lJA(I)
0
PIN CONNECTION DIAGRAMS
·C
-65 to +200
14
Ba..
270
438
292
,4-i=rE
Emitter 2
NPN
Emitter 3
6
Base
5 Emitter
CASE 61DA-04, STYLE 1
Ba.e
4 Emitter
Junction to Junction to
Ambient
Case
Coupling Factor
M03725
M03725F
M03725 (01-02)
(01-03 or 01-04)
%
85
75
57
55
(1) R6JA is measured with the device soldered into
ELECTRICAL CHARACTERISTICS
B
40
a
a
a
typical printed circuit board.
(TA = 25'C unless otherwise noted.)
Symbol
Min
V(BR)CEO
40
V(BR)CES
65
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
V(BR)CBO
65
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
6.0
Characteristic
Typ
Max
-
-
0.12
1.7
120
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
Collector-Emitter Breakdown Voltage
(lC = 10 pAdc, VBE = 0)
MD3725F
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TA = 100'C)
ICBO
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-334
-
Vdc
Vdc
Vdc
Vdc
pAdc
pAdc
MD3725, F, MQ3725
ELECTRICAL CHARACTERISTICS (continued) (TA
= 2S"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
SO
30
-
Max
Unit
ON CHARACTERISTlCS(2)
DC Current Gain
(lC = 100 mAde, VCE = 1.0 Vde)
(lC = SOO mAde, VCE = 2.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(IC = 100 mAde, la = 10 mAde)
(lC = 500 mAde, la = 50 mAde)
VCE(sat)
aase-Emitter Saturation Voltage
(lC = 100 mAde, la = 10 mAde)
(lC = 500 mAde, la = 50 mAde)
VBE(sat)
150
Vde
-
0.19
0.30
-
0.26
0.45
Vde
0.80
-
-
0.86
1.2
200
-
-
MHz
SMALL-5IGNAL CHARACTERISTICS
11'
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cobo
-
-
10
pF
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 100 kHz)
Cibo
-
-
65
pF
Turn-On Time
(VCC = 30 Vde, IC = 500 mAde, lal = 50 mAde, VaE(off) = 3.8 Vde)
ton
-
20
45
ns
Turn-Off Time
(VCC = 30 Vde, IC = 500 mAde, IBI = la2 = 50 mAde)
toff
-
50
76
ns
SWITCHING CHARACTERISTICS
(2) Pulse Test: Pulse Width", 300 p.s, Duty Cycle", 2.0%.
TYPICAL DC CHARACTERISTICS
FIGURE 2 - "ON" VOLTAGES
FIGURE 1 - DC CURRENT GAIN
400
1.4
~J. luoe
.:c....
200
...z
.
'"
100
::>
80
z
II'
II'
-
60
~
r-
12
v E" 1.0 V
-
r- 25 0e
~
~,
-550e
-TJ:250C
1.0
-
0
2- o.a
w
'"'"~
-"'~
40
0.6 =-VBEI..,I@lc/la: 10
>
>' 04
...
....
_....
0.2
-VCEI",I@lclla: 10
20
10
50
20
200 300
100
10
500 . 700 1000
20
~0
..
...
~
'"
~
i
Ii:
~
TJ = 25°C
0.6
\
\
0.4
0
..
0
0
0.5
2.0
5.0
20
~
r-
-0.5
~ -1.5
I
,.....
f-of- f-"
rova FOR VBE
>-
~
-
~ -1.0
500mA
50
+0.5 r-'.VC FOR VCElsa'1
>-
I II
10
500 700 1000
'APPLIES FOR Iclla < hFE/2
8w
arOmA
300mA
II
1.0
1000mA
I I
.......
I -loomA
..:;
>
~
1\
.........
.........
0.2
300
I
+2.0
.§ +1.5
~
ffi +1.0
o.a
G
;:
200
FIGURE 4 - TEMPERATURE COEFFICIENTS
0
>
100
+2.5
I
\
70
IC. COLLECTOR CURRENT (mAl
FIGURE 3 - COLLECTOR SATURATION REGION
1.0
50
30
Ie. COLLECTOR CURRENT ImAI
-2.0
-2.5
100
200
500
10
la, BASE CURRENT ImAI
20
30
50
100
200
300
IC. COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-335
500
1000
•
MD3725, F, MQ3725
TYPICAL DYNAMIC CHARACTERISTICS
. FIGURE 8 - CAPACITANCE
FIGURE 5 - CURRENT -GAIN - BANDWIDTH PRODUCT
~ 500
VCE = 10 Vdc
f=100MHz
TJ = l5 DC
i!
t;
=>
300
Q
~
200
~
..--
50
.............
"'
~
1
Z
~
w
'r--..
::;: 100
r--.
30
u
z
«
f-
-
20
U
~
10
7.0
f-
£
Cib
U
<;>
~
a
TJ = 25 DC
70
/'"
%
b
~
z
100
70
5.0
50
4.0
3.0
01
60
10
•
20
40
60
100
200
400
"-
CDb
02
0.5
1.0
IC. COLLECTOR CURRENT (rnA)
100
50
-
w
" "'
'">=
70
Ir@VCC-l0Vdc
VCC = 30 Vdc
1"0..
20
r-....
!
w
~ I:::::'
10
'd @VSE(Dff) = 0 V
'">=
~
,.....
30
20
30
50
100
200
300
500
10
1000
/
i"
20
30
50
100
200
300
<
~
f-
15
II'F
P.W.~1.01J'
.Z'n· 50 n
D_C.<2%
f------<>
1k
1000
FIGURE 10 - COLLECTOR CUTOFF CURRENT
1000
+30 V
tr.tf~ 1 ns
500
IC. COLLECTOR CURRENT (rnA)
FIGURE 9 - SWITCHING TIME TEST CIRCUIT
Vi" - +9.7
Pu lsa Generator
....
i'-..
./
IC. COLLECTOR CURRENT (rnA)
-3.8 V
TJ= 25 DC
// V
10
20
10
100
VC~ = 10 ~dlc
i-'
"",,- I"
V ....
.....
~~~(~j~ ~:~2 Vdc
3.0
50
1'@lcl' a-20
I IcllS = 10
"
50
20
50
20
If@ ICIIS = 10
1 Iclla = 20
100
30
10
200
ICIIS = 10
TJ= 25 DC
~
5.0
FIGURE 8 - TURN-OFF TIME
FIGURE 7 - TURN-ON TIME
200
2a
YR. REVERSE VOLTAGE (VOLTS)
To Sampling
43 Oscilloscope
~
'"
a
~
~
a
'"
1.0
8
0.1
Q
~
100
Z'n;;;'l00kn
1.0 nl
,,<
10
Q
f-
-
zy
VCES= 60
==
~~~ ~
;::
;J
~
LJ!JI'.
~
~
0.01
a
m
~
"
" ~ ~ ~
TJ. JUNCTION TEMPERATURE 'OC)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-336
--
A P'"
100
m
~
~
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
1.5
Adc
Collector Current -
Continuous
One Ole
Total Device Dissipation
@TA = 25'C
MD3762
MD3762F
MQ3762
Derate above 25'C
MD3762
MD3762F
MQ3762
Po
Total Device Dissipation
@TC = 25'C
MD3762
MD3762F
MQ3762
Derate above 25'C
MD3762
MD3762F
MQ3762
Po
MD3762, F
MQ3762
MD3762
CASE 654-07, STYLE 1
DUAL
AU Die
Equal Power
mW
MD3762F
CASE 610A-04, STYLE 1 ~
DUAL
~ 1
600
350
400
650
400
600
3.42
2.0
2.28
3.7
2.28
3.42
2.1
1.25
1.0
3.0
2.5
4.0
mWrC
9
MQ3762
CASE 607-04, STYLE 1
QUAD
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
14
AMPLIFIER TRANSISTORS
mWrC
12
7.15
5.71
..-~
PNPSILICON
17.2
14.3
22.8
PIN CONNECTION DIAGRAMS
'c
-65 to +200
(>
Collector 1
CASE 654-07, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
MD3762
MD3762F
MQ3762
Thermal Resistance, Junction to Ambient
MD3762
MD3762F
MQ3762
One Die
'CIW
RIJJC
83.3
140
175
58.3
70
43.8
292
500
438
270
438
292
Junction to
Ambient
Junction to
Case
Collector 9
7 Collector
~
'CIW
RIJJA(1)
Coupling Factor
MD3762
MD3762F
MQ3762 (Q1-Q2)
(Q1-Q3 or Q1-Q4)
2
Base
All Die
Equal Power Unit
Ba,.
1M5
Emitter 2
7 Collector
PNP
Emitter 3
6
Base
5 Emitter
CASE 610A-04, STYLE 1
Ba,.
4 Emitter
%
40
85
75
57 .
a
a
a
55
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
Collector-Base Breakdown Voltage
(lc = 10 !lAde, IE = 0)
V(BR)CBO
40
-
-
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
V(BR)EBO
5.0
-
-
-
-
100
10
nAde
!lAde
-
100
nAde
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
(VCB = 30 Vde, IE = 0, TA
ICBO
=
100'C)
Emitter Cutoff Current
(VBE = 3.0 Vdc, IC = 0)
lEBO
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-337
Vde
Vde
Vde
•
MD3762, F, MQ3762
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
hFE
20
40
Max
Unit
ON CHARACTERISTlCS(2)
DC Current Gain
(lc ~ 1.0 Adc, VCE ~ 2.0 Vdc)
-
-
Collector-Emitter Saturation Voltage
(lC ~ 1.0 Adc, IB ~ 0.1 Adc)
VCE(sat)
-
0.52
1.0
Vdc
Base-Emitter Saturation Voltage
(lC ~ 1.0 Adc, IB ~ 0.1 Adc)
VBE(sat)
-
1.05
1.4
Vdc
150
220
-
MHz
Cabo
-
8.5
20
pF
Cibo
-
22
80
pF
(VCC ~ 30 Vdc, VBE(off) ~ 2.0 Vdc,
IC ~ 1.0 Adc, IBI ~ 100 mAde)
td
-
5.0
10
ns
18
30
ns
(VCC ~ 30 Vdc, IC ~ 1.0 Adc,
IBI ~ IB2 ~ 100 mAde)
ts
-
45
80
ns
18
30
ns
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc ~ 50 mAde, VCE ~ 10 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc, IE
Input Capacitance
(VBE ~ 0.5 Vdc, IC
•
~
~
0, f
~
~
0, f
fT
140 kHz)
140 kHz)
SWITCHING CHARACTERISTICS
OelayTime
Rise Time
Storage Time
Fall Time
tr
tf
(2) Pulse Test: Pulse Width", 300 f.LS, Duty Cycle'" 2.0%.
(3) fr is defined as the frequency at which Ihfel extrapolates to unity.
FIGURE 2 - COLLECTOR SATURATION REGION
FIGURE 1 - DC CURRENT GAIN
200
zloo
C
!'"
70
0:
0:
1350
Ul 1.0
Ll
.;e;
VCE.l2.0~
TJ~ 1~~
.........
..,..2SOC
"...
..,.....,
~
.........
II
.........
-550
30
"...-
20
1.0
- -::::r\
I II I
ii 0.8 Ic'lOmA
~
..
s~
.....
0.4
\
o
...
...ul
>
50
100
10
20
200
IC, COLLECTOR CURRENT ImAI
0
0.2
500 1000
+1. 6
.5+0
~
.a
~ 1.0
,...l""
'"~ 0.6 t--
,-f-"
~
25DC10 10oo~
'8YC for VCElratl
-550 e 10 25 De
$o
w
~
I
30
200
1OOOC to 175DC
;:;
0:
I
20
100
T
I
g; -D.a
~ 0.4
r-- YC~I.II~
50
...
YaElo"I. YCE = 1.0 Y
>
Ic/la· 1101
;;;
2.0
5.0
10
20
la, BASE CURRENT ImAI
1.0
>
j....-I-'
'-
'Applies for Ic/la" hFE/4
G
!!.
1.2
0.2
0.5
,
FIGURE 4 - TEMPERATURE COEFFICIENTS
)- TJ= 25DC
Va~I.II@ IC/~
r\1.0A
r\
!;i
1.4
r--
TJ' 25°C
~ .
j 0.2
o
5.0
400mA
> 06
FIGURE 3 - "ON" VOLTAGE
o
>
;;;o.a
1m
100mA
o
~
2.0
\ II
TT
lIlT
I II
!::;
o
>
~-1. 6
l,..-
...
10
20
30
12SDe 10 l000C
SO 70 100
200 300
Ie, COLLECTOR CURRENT ImAI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-338
-
I-=~
t::::'jOOOC 10
II
-2.4
500 700 1000
-5Soe 10 2SDC
II
~
I
I
50 70 100
200 300
IC, COLLECTOR CURRENT ImAl
8va for VaE
~
175 DC
IiI
III
500 700 1000
MD3762, F, MQ3762
FIGURE 6 - ACTIVE REGION SAFE OPERATING AREA
2.0
I~
I-
.........
0
6
0.4 -TJ·2oo0C
~
~
~ o.2
~
~
-
de
-Bonding W.... limit
• ~cond .Brukdown limit
I
o. I
............
I
a 0.06 ~INO": rr::,":!~~~~~,: ru:!:.~.be
EO.04
I
0.02
4.0
6.0
8.0 10
20
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
2.0
40
FIGURE 7 - RISE AND FALL TIME
FIGURE 8 - TURN.()N TIME
200
100
200
IC/18· 10
[~
100
E
1,.VCC'30V
"'
I'...
",
0
0
...
30
""
.E
hi.
.......
ifl
50
~ .....
;: 30
.......
20 b
.
w
"'
10
-
-
--
200
TJ' 25"C
100
to-
~.
I--
.......
~
Ic/la= 10
-.:
60
0
r-..
lal- la2
0
20
t's'" t.-l/Btf
2~0
20
30
50 10 100
200 300
IC. COLLECTOR CURRENT (mAl
50D 100 1.0 k
-30 V
30
~
--
.........
50 10 100
200 300
Ie. COLLECTOR CURRENT (mAl
500 100 1.0 k
~
TJ" 25"C
I.......
2911
r-..
15011
-30li
-
"-
10
50
15011
F-
TJ" 25"C
-Tr 1500C
FIGURE 11 - CAPACITANCE
FIGURE 10 - SWITCHING TIME TEST CIRCUIT
+27.3 V
500 100 !.Ok
leila - 20
r<
..........
VCC' 110 V
lal- la2
20
-
1'-.
1'.1'
0
'"~
~
"'. "
c..... ,
TJ' I~~C
IClla' IO( ' ~- -~ ~
)IClla' 20
~100
200 300
50 10 100
COLLECTOR CURRENT ImAI
30
20
FIGURE 9 - FALL TIME
I-I--
-?" -c:::
r-
IC/rlj
I0
500 100 1.0 k
FIGURE 8 - STORAGE TIME
400
I,t
"f' ......
VCC- 30 V
.......
II
i'-. r--. .......
0
50 10 100
200 300
IC. COLLECTOR CURRENT (mAl
•
-TJ'15O"C
0
w
['.... t,I!>VCC' 10V
2.0 V",
Id·IVBE/Off • I
20
.
I
-I-- -T~' 25"C
-
~
TJ' 25bC
'\
0
10
10
,,~
~
1N916or
equlv.
1""- .....
10
Pul.. Width - 400 nl
Duty Cycle - 2"
Ie· 1.0 Amp
181 - 182 - 100 mA
1.0
0.04 0.06 0.1
0.2
0.4 0.6 1.0
2.0
4.0 8.0
VR. REVERSE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-339
10
20
40
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
12
Vde
Emitter-Base Voltage
VEBO
4.0
Vde
IC
50
mAde
Rating
Collector Current -
Continuous
CASE 654-07. STYLE 1
One Die
Both Die
Total Device Dissipation @ TA = 25"C
Derate above 25"C
PD
550
3.14
600
3.42
mW
mWfC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
PD
1.4
8.0
2.0
11.4
Watts
mWfC
Operating and Storage Junction
Temperature Range
-65 to +200
TJ, Tstg
MD4260
MD4261
"C
Emitter 3
THERMAL CHARACTERISTICS
Junction to
Ambient
Junction to
Case
Thermal Resistance
One Die
Effective, Both Die
319
292
125
87.5
Coupling Factor
83
40
Characteristic
•
5 Emitter
DUAL
RF AMPLIFIERS
Unit
PNP SILICON
"C/W
%
Refer to 2N4260 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCE
Collector Cutoff Current
(VCB
(lC
=
(lC
(IE
=
=
= 0)
= 0)
= 0)
10 mAde, IB
10 pAde, IE
10 pAde, IC
= 12 Vde, IB = 0)
= 10 Vde, IE = 0)
Vde
4.0
-
ICEO
-
1.0
pAde
ICBO
-
10
nAde
30
20
200
VCE(sat)
-
0.3
Vde
VBE(sat)
-
1.0
Vde
fr
1.0
1.5
-
GHz
Cobo
-
2.5
pF
Cibo
-
2.5
pF
rb'C e
-
35
30
ps
0.8
1.0
-
-
10
V(BR)CEO
12
V(BR)CBO
12
V(BR)EBO
Vde
Vde
ON CHARACTERISTICS
DC Current Gain
(lC
=
10 mAde, VCE
=
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
=
(lC
1.0 Vde)
=
(lC
= 30
10 mAde, IB
10 mAde, IB
=
=
mAde, VCE
= 2.0 Vde)
1.0 mAde)
1.0 mAde)
hFE
-
-
SMALL-SIGNAL CHARACTERISTICS
= 0.5 mAde, VCE = 4.0 Vde, f = 100 MHz)
= 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance (VCB = 3.0 Vde, IE = 0, f = 100 kHz)
Input Capacitance (VBE = 0.5 Vde, IC = 0, f = 100 kHz)
Collector Base Time Constant (lC = 5.0 mAde, VCE' = 4.0 Vde, f = 31.8 MHz)
(lC = 10 mAde, VCE = 10 Vdc, f = 31.8 MHz)
Current-Gain -
Bandwidth Product
(lC
(lC
-
MATCHING CHARACTERISTICS (MD4261 only)
DC Current Gain Ratio( 1)
(lC = 10 mAde, VCE = 1.0 Vde)
hFE1/hFE2
Base-Emitter Voltage Differential
(lC = 10 mAde, VCE = 1.0 Vde)
IVBE1-VBE21
(1) The lowest hFE reading is taken as hFEl for this ratio.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-340
mVde
MD5000, A, B
CASE 654-07, STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
20
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
50
mAdc
Rating
Collector Current Continuous
IC
Total Device Dissipation @ TA = 25'C
Derate above 25'C
One Side
Both
Sides
300
1.7
400
2.3
PD
Operating and Storage Junction
Temperature Range
5 Emitter
DUAL
AMPLIFIER TRANSISTORS
mW
mWrC
-65 to +200
TJ, Tstg
Emitter 3
PNPSILICON
'c
Refer to 2N3307 lor graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB
(VeB
=
=
(lc
(Ie
=
=
(IE
= 3.0
= 0)
= 0)
= 0)
mAdc, IB
10 ,JAdc, IE
10.,JAde, IC
15 Vde, IE
15 Vde, IE
= 0)
= 0, TA =
V(BR)CEO
15
V(BR)CBO
20
V(BR)EBO
5.0
ICBO
150'C)
-
-
0.010
1.0
Vdc
Vdc
Vde
,JAde
ON CHARACTERISTICS'
DC Current Gain
(lC
= 3.0
= 1.0 Vde)
= 10 mAde, IB = 1.0 mAde)
= 10 mAde, IB = 1.0 mAde)
mAde, VCE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC
(Ie
20
50
-
-
-
0.4
Vde
1.0
Vde
iT
600
900
-
MHz
Cobo
-
-
1.7
pF
Cibo
-
-
2.0
pF
NF
-
3.0
6.0
dB
-
0.7
hFE
VCElsat)
VBE(sat)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 4.0 mAde, VCE = 10 Vdc, f
=
100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, I =
140 kHz)
Input Capacitance
(VBE = 0.5 Vdc, IC
= 0, f =
140 kHz)
Noise Figure
(lC = 1.0 mAde, VCE
= 6.0 Vdc, f = 60 MHz, RS = 400 ohms)
FUNCTIONAL TEST
Amplilier Power Gain
(lc = 6.0 mAde, VCB
=
12 Vde, RG
= RL = 50 ohms, f = 200 MHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(1)
(lC = 4.0 mAde, VCE = 10 Vdc)
Base-Emitter Voltage Differential
(lC = 4.0 mAde, VCE = 10 Vde)
Base-Emitter Voltage Differential Gradient
(lC = 4.0 mAde, VCE = 10Vdc, TA = -55to + 125'C)
(1) The lowest hFE readong
IS
hFE1/hFE2
MD5000
MD5000A
MD5000B
0.9
0.8
IVBE1-VBE21
MD5000
MD5000A
MD5000B
-
5.0
-
tjt!lUmtt:p=t:hffi~~~=tmm
Nt-+-++++++lt-H-++
2.0
f-
r-
\
\r\
4.0
;;:
::l
;:;
~
z
z
IIHill
/
~
'\
"r-..I
'\.1'
2.0
1.0 Hf-t--FTi"1'tTtt-H-+++~f++-+lH-+H++H
Ie -IDa p.A
Rs -1.2 kO +-+-t+tt++l
a
II 1111 I
0.1
0.2
O.S
1.0
2.0
S.O
10
20
so 100
f. fREQUENCY 1kHz!
/
lOO.A
1"..\
~.
Ie - 1.0
Rs-O.7kO
I
)
6.0
'"to
le-lO"A
Rs -4.1kO
"V
= 1.0 kIIz
\1
'"
:s
4.0 HI'd--++++++H-I--+-+-+++t1ct+--H---I-+t-tttti
II IIII
f
IC=IO,.A
8.0
~
i;'V
lmA
IJ
VCE" 10 Vd,
1,.; ....
T,2r,C,,
Hf-+-++++++lt-H-++
00.1
0.2
FIGURE 6 - CURRENT·GAIN BANDWIDTH PRODUCT
600
III
I
1.0
- --
O_
w
~~
/
u
-
~1 0
V
~
!Ie
u
I
C;b-
r-. .......
r-. .......
20
30
100
i'o...
D.3
0.5 0.1 1.0
2.0 3.0
5.0 1.0 10
YR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-344
TJ = 25°C
f. 100 kHz
r-
1.0
3.0
U
50
IIIII
r-- t-
r--.... r")~
5.0
2.0 3.0
5.0 1.0 10
IC.COLLECTOR CURRENT (MAl
IIIII
so
1.0
2.0
5.0
10
20
RS. SOURCE RESISTANCE (k OHMSI
FIGURE 7 -.CAPACITANCE
30
VCP20 Vd,
f = 100 MHz
TJ = 25°C
'/
0.5
.....
20
MD6001, F, MD6002, F, MD6003, MQ6001
FIGURE I
- TURN ON TIME
FIGURE. -
I IIII
300
t. .. ,
20DD
~
~ 100
~
70
"'
30
20
10
~
, .. .
~
,
t.o
50
10
20
~
..
~
>=
100
g
..
200
300
. ..
Iclla = 10
10
5.0 7.0
500
-
......
20
10
20
30
50 70 100
Ie. COLLECTOR CURRENT {mAl
200
300
FIGURE 13 - STORAGE AND FALL
TIME TEST CIRCUIT
FIGURE 12 - DELAY AND RISE
TIME TEST CIRCUIT
·30
-30 V
200
P.W. > 200 ns
•
Iclla - 20
30
III
50 70 100
30
Ie. COLLECTOR CURRENT {mAl
500
70
.:: 50
..J-.....
20
300
VCC=30V _
lal = 182 _
TJ = 25DC
"-
~
~
• ITIIB = 21
10
200
FALL TIME
....
200
101"
5.0 7.0
30
50 70 100
Ie. COLLECTOR CURRENT {mAl
.
300
~
I-
11T1, ....
10
20
10
FIGURE 11 -
70
20
OA. ACTIVE REGION CHARGE
SOO
IBI = la2
TJ = 25 DC
!100
30
500
Jj III
1',-1,-1/81,
IClla- IO_
700
100
5.0 7.0
500
I
II
200
50
1000
200
I
II
300
~J
300
1/
l.,.I Io-"OT. TOTAL CONTROL CHARGE
STORAGE TIME
500
~
200
VCC·30V
~J - HOC
30D
- --
30
50 70 100
Ie. COLLECTOR CURRENT ImAl
FIGURE 10 -
d
-
.
I'
5.0 7.0
1.0-1'"
3000
- - - - VCC' 30 v. VBE(of!l = 2.0 V--VCC=IOV.VBE(of!l-OV IC/IB = 10
TJ = 250 C
200
!
CHARGE DATA
5000
500
2.0 ns
Duty Cycle" 2.0%
tr "
._ dT40.
~~
+-r
V_...I..,..0"'k,....-.....
10k
. TO OSCillOSCOPE
RISE TIME ~ 5 a os
-:1>200ns~
2.0 ns
DUly Cycle" 2.0%.
For NPN Test Circulls, Reverse
lN916
tr "
-3.0 V
Diode and all Voltage Polarities.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3·345
,---....\--<>SCOPE
500
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltag"e"
VEBO
5.0
Vdc
IC
500
mAdc
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA=25°C
Derate above 25°C
PD
Total Device Dissipation
@TC = 250(;
Darate above 25°C
PD
Operating and Storage Junction
Temperature Range
MD7000
CASE 654-07, STYLE 1
One Die
Both Ole
575
3.29
625
3.57
mW
mWrC
1.8
10.3
2.5
14.3
Watts
mWrC
-65 to +200
TJ, Tstg
°c
Emitter 3
DUAL
GENERAL PURPOSE
TRANSISTOR
THERMAL CHARACTERISTICS
•
Chancterlstic
Symbol
One Die
Both Die
Unit
Thermal Resistance, Junction to Case
RWC
97
70
°C/W
RWA(l)
304
280
°C/W
Junction to
Ambient
Junction to
Case
84
44
Thermal Resistance, Junction to
Ambient
Coupling Factor
5 Emitter
NPN SILICON
Rafer to MD2218 for graphs.
%
(1) RWA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc, IB = 0)
V(BR)CEO
30
-
Collector-Base Breakdown Voltage
(lc = 10 pAdc, IE = 0)
V(BR)CBO
50
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
ICBO
-
-
40
70
30
60
80
50
-
Chancteristlc
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Cu rrent
(VCB = 40 Vdc, IE = 0)
-
Vdc
Vdc
-
Vdc
100
nAdc
ON CHARACTERISTICS
DC Current Gain(2)
(lc = 1.0 mAdc, VCE = 10 Vdc)
(lC = 150 mAdc, VCE = 10 Vdc)
(lC = 300 mAdc, VCE = 10 Vdc)
-
hFE
-
0.2
0.4
Vdc
VBE(sat)
-
0.95
1.3
Vdc
IT
200
250
-
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cobo
-
3.5
8.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 100kHz)
Cibo
-
15
30
pF
Collector-Emitter Saturation Voltage
(lc = 150 mAdc, IB = 15 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAdc)
SMALL-8IGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
(2) Pulse Test: Pulse Width .. 300 /JS, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-346
MAXIMUM RATINGS
MD7001, F
MQ7001
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
600
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation @ T A
MD7001
MD7001F
M07001
Derate above 25·C
MD7001
MD7001F
M07001
~
25·C
One Die
AIiDie
600
350
400
650
400
600
3.42
2.0
2.28
3.7
2.28
3.42
2.1
1.25
1.0
3.8
2.5
4.0
12
7.15
5.71
17.2
14.3
22.8
mW
PD
MD7001F
CASE 610A-04, STYLE 1 ~
DUAL
~'
mWrC
Total Device Dissipation @ TC ~ 25·C
MD7001
MD7001F
M07001
Derate above 25·C
MD7001
MD7001F
M07001
Operating and Storage Junction
Temperature Range
9
MQ7001
CASE 607-04, STYLE 1
QUAD
Watts
PD
-65 to +200
PNPSILICON
·C
0
PIN CONNECTION DIAGRAMS
Symbol
Thermal Resistance, Junction to Ambient
MD7001
MD7001F
MQ7001
14
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
MD7001
MD7001F
MQ7001
~ '1
-::2$5
mWrC
TJ, Tstg
Characteristic
71/~
MD7001STYLE 1
CASE 654-07,
DUAL
One Die
CASE 654-07, STYLE 1
·CIW
RruC
83.3
140
175
2
Base
58.3
70
43.8
Collector 9
292
500
438
270
438
292
Junction to
Ambient
Junction to
Case
85
75
57
55
40
0
0
0
7 Collector
~
·CIW
RruA(1)
Coupling Factor
MD7001
MD7001F
MQ7001 (01-02)
(01-03 or 01·04)
Collector 1
All Die
Equal Power Unit
Base
1~5
Emitter 2
7 Collector
PNP
Emitter 3
6
Base
5 Emitter
CASE 610A-04, STYLE 1
Base
4 Emitter
%
(1) RBJA is measured with the device soldered into a typical printed cIrcuit board.
ELECTRICAL CHARACTERISTICS (TA
~ 25·C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lC ~ 10 mAde, IB ~ 0)
V(BR)CEO
30
-
-
Vde
Collector-Base Breakdown Voltage
(lC ~ 10 I-CAde, IE ~ 0)
V(BR)CBO
50
-
-
Vde
Emitter-Base Breakdown Voltage
(IE ~ 10 I-CAde, IC ~ 0)
V(BR)EBO
5.0
-
-
Vde
-
-
100
nAde
40
70
30
50
90
60
-
0.25
0.4
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB ~ 40 Vde, IE ~ 0)
ICBO
ON CHARACTERISTICS/21
DC Current Gain
(lc ~ 1.0 mAde, VCE ~ 10 Vde)
(lc ~ 150 mAde, VCE ~ 10 Vde)
(lC ~ 300 mAde, VCE ~ 10 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC ~ 150 mAde, IB ~ 15 mAde)
VCE/sat)
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-347
-
Vde
..
MD7001, F, MQ7001
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25"C unless otherwise noted)
Characteristic
Base-Emitter Saturation Voltage
(lC ~ 150 mAde, IB ~ 15 mAde)
Symbol
Min
Typ
Max
Unit
VBE(sat)
-
0.88
1.3
Vdc
t,.
200
320
-
MHz
Cobo
-
5.8
8.0
pF
Cibo
-
16
30
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lC ~ 20 mAde, VCE ~ 20 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 10 Vdc, IE
Input Capacitance
(VBE ~ 2.0 Vdc, IC
•
~
~
0, f
0, f
~
~
100 kHz)
100 kHz)
(2) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-348
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
30
mAdc
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA=25°C
Derate above 25°C
PD
Total Device Dissipation
@TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
MD7002, A, B
CASE 654-07, STYLE 1
One Die
Both Die
Equal Power
575
3.29
625
3.57
mW
mWI"C
1.8
10.3
2.5
14.3
Watts
mWI"C
Emitter 3
5 Emitter
°c
-65 to +200
TJ, Tstg
DUAL
AMPLIFIER TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
One Die
Both Die
Equal Power
Unit
R8JC
97
70
°CfW
RUJA(l)
304
280
°CfW
Junction to
Ambient
Junction to
Case
84
44
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
NPN SILICON
Symbol
Coupling Factors
Refer to 2N2919 for graphs.
%
(1) R8JA is measured wIth the devIce soldered Into a tYPIcal printed circUIt board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
I
Symbol
Min
V(BR)CEO
40
V(BRICBO
50
V(BR)EBO
Typ
Max
Unit
-
Vde
5.0
-
-
Vde
ICBO
-
-
100
nAde
hFE
40
50
130
170
-
VCE(sat)
-
0.2
0.35
Vde
VBE(sat)
-
0.8
1.0
Vdc
fr
200
260
-
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, I = 100 kHz)
Cobo
-
2.6
6.0
pF
Input Capacitance
(VBE = 2.0 Vde, IC = 0, I
Cibo
-
2.3
8.0
pF
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(lC = 10 mAde, IB = 0)
(lC = 10 pAde, IE = 0)
(IE = 10 pAde, IC = 0)
(VCB = 30 Vde, IE = 0)
Vde
ON CHARACTERISTICS
DC Current Gain(2)
(lC = 100 pAde, VCE = 10 Vde)
(lC = 10 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lc = 10 mAde, IB = 1.0 mAde)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(2)
(lc = 5.0 mAde, VCE = 20 Vdc, I = 100 MHz)
=
100 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC = 100 pAde, VCE = 10 Vdc)
Base-Emitter Voltage Differential
(lC = 100 pAde, VCE = 10 Vdc)
hFE1/hFE2
MD7002A
MD7002B
0.75
0.85
IVBE1-VBE21
MD7002A
MD7002B
-
(2) Pulse Test: Pulse Width", 300 /LB, Duty Cycle", 2.0%.
(3) The lowest hFE reading is taken as hFEl lor this ratio.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-349
-
-
1.0
1.0
25
15
mVdc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
50
mAde
Collector Current -
Continuous
One Ole
Total Device Dissipation
@TA=25'C
MD7003,A,B
MD7003,AF
M07003
Derate above 25'C
MD7003,A,B
MD7003,AF
M07003
•
AU Ole
Equal Power
mW
PD
550
350
400
600
400
600
3.14
2.0
2.28
3.42
2.28
3.42
mWrC
Total Device Dissipation
@TC = 25'C
MD7003,A,B
MD7003,AF
M07003
Derate above 25'C
MD7003,A,B
MD7003,AF
M07003
MD7003, A, B
MQ7003
MD7003, A, B
CASE 654-07, STYLE 1
DUAL
MQ7003
CASE 607-04, STYLE 1
QUAD
14
Watts
PD
1.4
0.7
0.7
2.0
1.4
2.8
~
-e>.i§Si
AMPLIFIER TRANSISTORS
PNP SILICON
mWrC
11.4
8.0
16
8.0
4.0
4.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
Refer to 2N3810 for curves.
-65 to +200
'c
PIN CONNECTION DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
MD7003,A,B
MD7003
M07003
One Die
All Die
Equal Power Unit
'C/W
RruC
125
250
250
87.5
125
62.6
319
500
438
292
438
292
Emitter 3
Thermal Resistance, Junction to Ambient
MD7003,A,B
MD7003
M07003
5 Emitter
'C/W
RruA(1)
CASE 607-04
STYLE 1
CASE 654-07
STYLE 1
Junction to Junction to
Ambient
Case
Coupling Factor
MD7003,A,B
MD7003
M07003 (01-02)
(01-03 or 01-04)
%
40
0
0
0
83
75
57
55
(1) R6JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage(2)
(lC = 10 mAdc,lB = 0)
V(BR)CEO
40
-
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 pAdc, IE = 0)
V(BR)CBO
50
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
V(BR)EBO
5.0
-
-
Vdc
ICBO
-
-
100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain(2)
(lc = 100 pAdc, VCE = 10 Vdc)
(lc = 10 mAde, VCE = 10 Vdc)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-350
~
MD7003, A, B, MQ7003
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(lC = 10 mAde, iB = 1.0 mAde)
VCE(sat)
Min
-
0.25
0.35
Vde
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
0.6
1.0
Vde
fr
200
300
-
MHz
Cobo
-
3.0
6.0
pF
Cibo
-
2.0
8.0
pF
NF
-
2.0
-
dB
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 20 Vde, I
Output Capacitance
(VCB = 10 Vde, IE
= 0, I =
Input Capacitance
(VBE = 2.0 Vde, IC
= 0, I =
=
100 MHz)
100 kHz)
100 kHz)
Noise Figure
(lC = 100 pAde, VCE = 10 Vde, RS
f = 10 Hz to 15.7 kHz)
= 3.0 kohms,
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
(lC = 100 pAde, VCE = 10 Vde)
Base-Emitter Voltage Differential
(lC = 100 pAde, VCE = 10 Vde)
hFE1/hFE2
MD7003A,AF
MD7003B
0.75
0.85
IVBE1-VBE21
MD7003A,AF
MD7003B
1.0
1.0
mV
-
(2) Pulse Test: Pulse Width", 300 ! 100 k ohms
Con"; 12 pF
RISE TIME <- 50 ns
Rin> 100 k ohms
Cin"; 12 pF
RISE TIME"; 5.0 ns
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-359
•
MHQ2369
MPQ2369
1!¢i'~'~1
MHQ2369
CASE 632-08, STYLE 1
TO-116
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
15
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
500
mAde
Collector Current -
•
Continuous
Total Device Dissipation
@TA = 25°C
MHQ2369
Derate·above 25°C
MPQ2369
PD
Operating and Storage Junction
Temperature Range MHQ2369
MPQ2369
TJ, Tstg
Each
Transistor
Total
Device
0.5
2.86
5.0
1.5
8.58
15
1
MPQ2369
CASE 646-06, STYLE 1
TO-116
1
Watts
mWrC
1234567
QUAD
SWITCHING TRANSISTORS
°c
-65to +200
-55 to + 125
NPN SILICON
Refer to MD2369 for graphs.
= 25°C unless otherwise
ELECTRICAL CHARACTERISTICS (TA
noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
-
Vde
-
Vde
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
COllector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(VBE
=
=
(IE
=
(lC
=
(lC
10 !LAde, IC
20 Vde, IE
= 3.0 Vde,
=
10 mAde, IB
0)
= 0)
= 0)
10 !LAde, IE
IC
= 0)
= 0)
V(BR)CEO
15
V(BR)CBO
40
"lBR)EBO
4.5
ICBO
-
lEBO
-
-
-
-
Vde
-
0.4
!LAde
0.5
!LAde
-
-
-
-
ON CHARACTERISTICS
DC Current Gain(1)
(lC
(lC
=
=
10 mAde, VCE = 1.0 Vde)
100 mAde, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
=
(lC
=
hFE
10 mAde, IB
10 mAde, IB
=
=
1.0 mAde)
1.0 mAde)
40
20
-
-
0.25
Vde
-
0.9
Vde
fy
450
550
-
MHz
Cobo
-
2.5
4.0
pF
Cibo
-
3.0
5.0
pF
ton
-
9.0
-
ns
toff
-
15
-
ns
VCE(sat)
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
1 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
1 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 3.0 Vde, VBE
=
Turn-Off Time
(VCC = 3.0 Vde, IC
10 mAde, IB1
=
1.5 Vde, IC
=
10 mAde, IB1
= 3.0
= 3.0
mAde, IB2
=
mAde)
1.5 mAde)
(1) Pulse Test: Pulse Width"" 300 !'S, Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL SEMICONDUCTORS
3-360
QUAD DUAL IN-LINE
NPN HERMETIC SILICON
AMPLIFIER TRANSISTORS
MHQ2484,H,HX,HXV
· .. designed for low-level, high-gain amplifier applications.
• Low Noise Figure -
CASE 632-08, STYLE 1
TO-116
NF = 2.0 dB (Typ) @lIC = IOI'-Adc
• Transistors Similar to 2N2484
• TO-116 Ceramic Package - Compact Size Compatible with
IC Automatic Insertion Equipment
fiIIIII/IIItJ
~!.~~~
• "H" Series for Hi-Rei Applications
(See Tables 1 thru 3)
, l!¢i ,~, !¢il
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
40
Vde
Collector-Emitter Voltage
Collector-Base Voltage
VCB
60
Vde
Emitter-Base Voltage
VEB
6.0
Vde
Collector Current -
Continuous
50
IC
Power Dissipation @ TA = 25°C
Derate above 25°C
Po
Power Dissipation @ TC = 25°C
Derate above 25°C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
1234567
QUAD
AMPLIFIER TRANSISTORS
mAde
Each
Total
Transistor
Device
NPNSILICON
0.6
3.42
1.8
10.3
mWFC
1.2
6.85
4.2
24
Watts
mWFC
Watts
-65 to +200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
°c
I
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage (1)
(lc = 10 mAde, 'B = 0)
V(BR)CEO
40
-
-
Vde
Collector-Base Breakdown Voltage
(lc = 10 pAde, IE = 0)
V(BR)CBO
60
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
6.0
-
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 45 Vde, IE = 0)
ICBO
-
-
20
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
-
20
nAde
200
300
300
-
-
ON CHARACTERISTICS
DC Current Gain (1)
(lc = 0.1 mAde, VCE = 5.0 Vde)
(lC = 1.0 mAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
hFE
-
-
-
0.13
0.15
0.35
0.5
-
0.58
0.7
0.7
0.8
50
100
-
Ceb
-
1.8
6.0
pF
Cib
-
4.0
8.0
pF
NF
-
2.0
-
dB
Collector-Emitter Saturation Voltage (1)
(lc = 1.0 mAde, IB = 0.1 mAde)
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
Base-Emitter On Voltage
(lc = 100 pAde, VCE = 5.0 Vde)
(lc = 10 mAde, VCE = 5.0 Vde)
VBE(on)
Vde
-
Vde
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 500 !LAde, VCE = 5.0 Vde, f
Collector-Base Capacitance
(VCB = 5.0 Vde, IE = 0, f
Input Capacitance
(VBE = 0.5 Vde, IC
=
=
100 kHz)
= 0, f =
100 kHz)
fT
MHz
20 MHz)
Noise Figure
(lC = 10 pAde, VCE = 5.0 Vde, RS = 10 kil,
f = 10 Hz to 15.7 kHz, BW = 10 kHz)
(1) Pulse Test: Pulse Width :os: 300 p.s, Duty Cycle
=
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-361
..
MHQ2484, H, HX, HXV
TABLE 1 -
PRODUCT CLASSIFlCAnoNS
H
- Controlled Lot with Sample Environmental and Life Testing
HX - 100% Processing Plus Sample Environmental and Life Testing
HXV - Same as HX Plus 100% Internal Visual Inspection
TABLE 2 -
HXlHXV 100% PROCESSING STEPS
Internal Visual (Mil-Std-750, Method 2072)
HX
HXV
-
100%
High Temperature Storage (Mil-Std-750, Method 1032)
100%
100%
Thermal Shock (Mil-Std-202, Method 107 Condo P)
100%
100%
Constant Acceleration (Mil-Std-750, Method 2006, 20 KGS, Yl)
100%
100%
Hermetic Seal (fine + Gross Leak) (Mil-Std-750, Method 1071, Condo G +Gl")
100%
100%
READ Electrical Parameters (Group A)
100%
100%
High Temperature Reverse Bias (Mil-Std-750, Method 1039, Condo A)
1000'{'
100%
READ Electrical Parameters (Group A)
100%
100%
Power Burn-In (Mil-Std-750, Method 1039, Condo B)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
• T(LOW)
= - 55°C
** Condo G, Fine Leak = ,
x 10 7 ATM. CC/sec.
TABLE 3 -
SIMPLIFIED HI-REL PRODUCT FLOW
H
HX
Commercial
Product
Commercial
Product
+
Group A, B, C
Sample
Test
t
Ship
HXV
100%
Pre Cap Visual
l
+
100%
Test
100%
Test
Group A, B, C
Sample
Test
Group A, B, C
Sample
Test
~
+
Ship
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-362
~
~
Ship
MHQ2906
MPQ2906* MPQ2907*
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
600
mAde
Collector Current -
Continuous
Total Device Dissipation
@TA = 25°C
Derate above 25°C
MHQ2906
MPQ2906,
MPQ2907
Device
0.65
1.9
Watts
3.72
10.88
mWrC
PD
1&i~&11
1
2
°c
TJ, Tstg
3
4
5
6
7
QUAD
GENERAL PURPOSE
TRANSISTORS
19
6.5
Operating and Storage Junction
Temperature Range MHQ2906
MPQ2906.07
MP02906
MP02907
_
CASE 646-06, STYLE 1
TO-116
'4
Total
Each
Transistor
,.
MHQ2906
CASE 632-08, STYLE 1
TO-116
MAXIMUM RATINGS
-65 to +200
- 55 to + 125
PNPSILICON
Refer to MD2904 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
V(BR)CEO
40
Vde
60
5.0
-
Vde
V(BR)EBO
-
-
V(BR)CBO
50
nAde
-
50
nAde
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lC
=
(lC
(IE
=
=
10 mAde, 'B
=
0)
= 0)
= 0)
10 pAde, IE
10 pAde, IC
= 30 Vde, IE = 0)
= 3.0 Vde, 'E = 0)
(VCB
(VCB
'CBO
lEBO
-
Vde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE = 10 Vde)
hFE
(lC = 150 mAde, VCE = 10 Vde)
(lC
= 300 mAde, VCE =
10 Vde)
MHQ2906, MPQ2906
MPQ2907
35
75
-
-
MHQ2906, MPQ2906
MPQ2907
40
100
-
-
MHQ2906, MPQ290S
MPQ2907
30
50
-
-
Collector-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lc = 300 mAde, IB = 30 mAde)
VCE(sat)
Base-Emitter Saturation Voltage(l)
(lC = 150 mAde, IB = 15 mAde)
(lC = 300 mAde, IB = 30 mAde)
VBE(sat)
-
-
-
Vde
-
-
-
0.4
I.S
-
-
1.3
2.6
fT
200
350
-
Output Capacitance
(VCB = 10 Vdc, 'E = 0, f = 1 MHz)
Cobo
-
6.0
8.0
pF
Input Capacitance
(VBE = 2.0 Vde, IC
Cibo
-
20
30
pF
ton
-
30
-
ns
toff
-
170
-
ns
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
=
0, f
=
MHz
1 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, IC
=
150 mAde, 'Bl
=
15 mAde)
Turn-Off Time
(VCC = 6.0 Vde, IC = 150 mAde, 'Bl = IB2
=
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle
*MPQ2906A and MPQ2907A also available.
=
15 mAde)
2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-363
•
MHQ2906, MPQ2906, MPQ2907
FIGURE 2 - STORAGE AND FALL
TIME TEST CIRCUIT
FIGURE 1 - DELAY AND RISE
TIME TEST CIRCUIT
-30
INPUT
+15 V
200
Zo' 50"
PRF· 150 PPS
RISE TIME .. 2.0
n,
10 k
TO OSCillOSCOPE
INPUT
Zo '" 50 u
PRF' 150 PPS
RISE TIME" 2 0",
1.0k
10k
RISE TIME.:;; SOns
50
50
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-364
-6.0
37
TO OSCILLOSCOPE
RISE TIME .. 5.0 no
MHQ3467
CASE 632-08, STYLE 1
TO-116
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
40
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
1.0
Ade
Collector Current -
Continuous
Total Device Dissipation
@TA = 25'C
Derate above 25'C
PD
Total Device Dissipation
@TC = 25'C
Derate above 25'C
PD
Each
Total
Transistor
Device
0.9
5.14
2.7
15.4
1.8
10.3
Operating and Storage Junction
Temperature Range
TJ, Tstg
6.3
36
-55 to +200
-l1¢r~&i1
1
Watts
mWrC
1234567
QUAD
MEMORY DRIVER TRANSISTORS
Watts
mWrC
'c
PNP SILICON
Refer to MD3467 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
-
Vde
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
40
-
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
-
Vde
Collector Cutoff Current
(VCB = 30 Vde, IE = 0)
ICBO
-
200
nAde
Emitter Cutoff Current
(VBE = 3.0 Vde, IC = 0)
lEBO
-
-
200
nAde
hFE
20
-
-
Collector-Emitter Saturation Voltage(l)
(lC = 500 mAde, IB = 50 mAde)
VCE(sat)
-
0.23
0.5
Vde
Base-Emitter Saturation Voltage(l)
(lC = 500 mAde, IB = 50 mAde)
VBE(sat)
-
0.9
1.2
Vde
125
190
-
MHz
Cabo
-
10
25
pF
Cibo
-
55
80
pF
ton
-
40
ns
toff
-
90
ns
Max
Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 500 mAde, VCE
=
1.0 Vde)
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC = 50 mAde, VCE = 10 Vde, f = 100 MHz)
Output Capacitance
(VCB = 10 Vde, IE
= 0, f =
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
fT
1 MHz)
1 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(lc = 500 mAde, IBl
=
50 mAde)
Turn-Off Time
(lC = 500 mAde, IBl
=
IB2
=
50 mAde)
(1) Pulse Test: Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-365
-
•
MHQ3546
MPQ3546
MHQ3546
CASE 632-08, S T Y L E .
TO-116
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
12
Vde
Collector-Base Voltage
VCBO
15
Vde
Emitter-Base Voltage
VEBO
4.5
Vde
IC
200
mAde
Rating
Collector Current -
Continuous
Total Device Dissipation
@TA=25"C
Derate above 25"C
•
Each
Total
Transistor
Device
0.5
2.86
4.0
1.5
8.58
12
Operating and Storage
Junction
MH03546
MP03546
Temperature Range
[!¢i ~ 1¢1 ["
1234567
mWrC
QUAD
SWITCHING TRANSISTORS
"C
TJ. Tstg
,!m~H ~
TO-116
Watts
Po
MH03546
MP03546
14
MPQ3S46
CASE 646-06, STYLE 1 ~
-65 to +200
-55to +150
PNPSILICON
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted:)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(lc = 10 mAde. IB = 0)
(lC = 10 pAde. IE = 0)
(IE = 10 pAde, IC = 0)
(VCB = 10 Vde, IE = 0)
(VBE = 3.0 Vde, IC = 0)
V(BR)CEO
12
-
-
V(BR)CBO
15
-
V(BR)EBO
4.5
-
ICBO
-
lEBO
-
-
-
30
15
-
-
-
0.25
Vde
-
0.9
Vde
-
MHz
Vde
Vde
Vde
0.1
pAde
0.1
pAde
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 mAde, VCE = 1.0 Vde)
(lC = 100 mAde, VCE = 1.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VCE(sat)
-
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
VBE(sat)
-
-
SMALL-SIGNAL CHARACTERISTICS
tr
600
1000
Output Capacitance
(VCB = 10 Vde, IE = 0, f = 1.0 MHz)
Cobo
-
2.0
6.0
pF
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 1.0 MHz)
Cibo
-
3.5
8.0
pF
Turn-On Time
(VCC = 2.0 Vde, VBE(off) = 3.0 Vde,
IC = 30 mAde, IBI = 1.5 mAde)
ton
-
15
-
ns
Turn-Off Time
(VCC = 2.0 Vde, IC = 30 mAde,
IBI = IB2 = 1.5 mAde)
toff
-
25
-
ns
Current-Gain - Bandwidth Produet(l)
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHz)
SWITCHING CHARACTERISTICS
(1) Pulse Test: Pulse Width", 300 /JoS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-366
QUAD DUAL-IN LINE
NPN HERMETIC SILICON
MEMORY DRIVER TRANSISTORS
· .. designed for high-current, high-speed switching, ferrite core and plated
wire memory drivers, and MOS translator applications.
MHQ3724,H,HX,HXV
MHQ3725,H,HX,HXV
• Fast Switching Times ton = 35 ns (Max)
toft = 60 ns (Max)
• Low Collector-Emitter Saturation Voltage IC = 1.0 Adc
• DC Current Gain Specified -
VCE(sat) = 0.95 Vdc (Max) @
100 mAdc to 1.0 Adc
• Transistors Similar to 2N3724, 2N3725
• TO-116 Ceramic Package Insertion Equipment
Compact Size Compatible with IC Automatic
• "H" Series for Hi-Rei Applications (See Tables 1 thru 3)
Symbol
MHQ3724
MHQ3725
Unit
Collector-Emitter Voltage
VCEO
30
45
Vde
Collector-Emitter Voltage
VCES
50
70
Vde
Collector-Base Voltage
VCB
50
70
Emitter-Base Voltage
VEB
6.0
IC
1.5
Collector Current -
Continuous
I&:i'~ !¢il ""
1234567
MAXIMUM RATINGS
Rating
CASE 632-08, STYLE 1
TO-116
QUAD
MEMORY DRIVER
TRANSISTORS
•
NPNSILICON
Vde
Vde
Ade
Four
Total Power Dissipation
@TA=25'C
Derate above 25'C
Po
Total Power Dissipation
@TC=25'C
Derate above 25'C
Po
Operating and Storage Junction
Each
Transistors
Transistor
Equal Power
750
4.3
2000
11.4
mW
mWI'C
1.2
6.86
4.0
22.8
Watts
mW/'C
TJ, Tstg
'c
-55 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(lC = 10 mAde, IB = 0)
MHQ3725
MHQ3724
V(BR)CEO
45
30
-
Collector-Emitter Breakdown Voltage
(lC = 10 !LAde, VBE = 0)
MHQ3725
MHQ3724
V(BR)CES
70
50
-
Collector-Base Breakdown Voltage
(lc = 10 !LAde, IE = 0)
MHQ3725
MHQ3724
V(BR)CBO
70
50
V(BR)EBO
6.0
Emitter-Base Breakdown Voltage (lc = 0, IE = 10 "Ade)
Collector Cutoff Current (VCB = 50 Vde, IE = 0)
(VCB = 40 Vde, IE = 0)
MHQ3725
MHQ3724
ICBO
-
Vde
Vde
-
-
60
25
35
25
100
40
50
50
250
-
-
0.14
0.23
0.36
0.26
0.52
0.95
Vde
0.75
0.88
1.0
0.86
1.1
1.7
Vde
0.8
500
Vde
Vde
nAde
ON CHARACTERISTICS (1)
OC Current Gain (lC
(lC
(lC
=
=
=
100 mAde, VCE
500 mAde, VCE
1.0 Ade, VCE
=
=
=
1.0 Vde)
1.0 Vde)
hFE
MHQ3724
MHQ3725
5.0 Vde)
= 100 mAde, IB = 10 mAde)
= 500 mAde, IB = 50 mAde)
= 1.0 Ade, IB = 100 mAde)
= 100 mAde, IB = 10 mAde)
= 500 mAde, IB = 50 mAde)
= 1.0 mAde, IB = 100 mAde)
Collector-Emitter Saturation Voltage (lC
(lC
(lc
VCE(sat)
Base-Emitter Saturation Voltage (lC
(lC
(lC
VBE(sat)
-
-
-
-
(continued)
Note 1, Pulse Test: Pulse Width.,;,;;; 300 #LS, Duty Cycle>:; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-367
MHQ3724, H, HX, HXV, MHQ3725, H, HX, HXV
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
Min
Typ
Max
Unit
tr
200
275
Cob
-
5.0
10
pF
Cib
50
70
pF
ton
-
20
35
ns
toff
-
50
60
ns
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 50 mAde, VCE = 10 Vdc, I = 100 MHz)
Output Capacitance (VCB
Input Capacitance (VBE
=
=
10 Vdc, IE
0.5 Vdc, Ie
= 0, I = 100 kHz)
= 0, I = 100 kHz)
-
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vdc, IC
= 0.5 Adc, VBE(off) =
Turn-Off Time
(VCC = 30 Vdc, IC
=
0.5 Adc, IBl
3.8 Vdc, IBl
= IB2 =
=
50 mAde)
50 mAde)
Figure 1. Turn-On and Turn-Off Switching Times Test Circuit
TO SAMPLING
OSCILLOSCOPE
lin ~ 100 kn
tr < 1 ns
Table 1. Product Classifications
H
HX HXV -
Controlled Lot with Sample Environmental and Lile Testing
100% Processing Plus Sample Environmental and Lile Testing
Same as HX Plus 100% Internal Visual Inspection
Table 2. HX!HXV 100% Processing Steps
Internal Visual (Mil-Std-750, Method 2072)
HX
HXV
-
100%
High Temperature Storage (Mil-Std-750, Method 1032)
100%
100%
Thermal Shock (Mil-Std-202, Method 107, Condo F*)
100%
100%
Constant Acceleration (Mil-Std-750, Method 2006, 20 KGs, Yl)
100%
100%
Hermetic Seal (Fine + Gross Leak) (Mil-Std-750, Method 1071, Condo G + Gl**)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
High Temperature Reverse Bias (Mil-Std-750, Method 1039, Condo A)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Power Burn-In (Mil-Std-750, Method 1039, Condo B)
100%
100%
READ Electrical Parameters (Group A)
100%
100%
Table 3. Simplified Hi-Rei Product Flow
H
HX
HXV
Commercial
Commercial
Product
100%
Pre Cap
Visual
100%
Test
100%
Test
Group A, B, C
Sample
Test
Group A, B, e
Sample
Test
Ship
Ship
Product
Group A, B, C
Sample
Test
Ship
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-368
MHQ3798
CASE 632-08, STYLE 1
TO-116
,-
MAXIMUM RATINGS
Svmbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
50
mAde
Collector Current -
Continuous
Total Device Dissipation
@TA = 25°C
Derate above 25°C
Po
Total Device Dissipation
@TC=25°C
Derate above 25°C
Po
Each
Total
Transistor
Device
0.5
2.86
1.5
8.58
TJ, Tstg
13
12 11
10
9
8
1i::&I1
Watts
1.0
5.71
Operating and Storage Junction
Temperature Range
1
14
mWrC
1234567
Watts
mWrC
3.5
20
..
QUAD
AMPLIFIER TRANSISTORS
-65 to +200
°c
PNP SILICON
Refer to 2N3810 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Svmbol
Min
Tvp
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
40
-
-
Vde
Collector-Base Breakdown Voltage
V(BR)CBO
60
-
-
Vde
V(BR)EBO
5.0
-
-
Vde
10
nAde
20
nAde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
(lC = 10 IlAde, IE = 0)
(IE = 10 IlAde, IC = 0)
-
-
100
150
150
125
-
-
-
0.2
0.25
-
-
0.7
0.8
IT
-
130
-
MHz
Output Capacitance
(VCB = 5.0 Vde, IE = 0, f = 1.0 MHz)
Cobo
-
2.3
-
pF
Input Capacitance
(VBE = 0.5 Vde, IC = 0, f = 1.0 MHz)
Cibo
-
5.5
-
pF
NF
-
2.5
-
dB
Collector Cutoff Current (VCB = 50 Vde, IE = 0)
ICBO
Emitter Cutoff Current
lEBO
(VBE = 3.0 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 10 ",Ade, VCE = 5.0 Vde)
(lC = 100 IlAde, VCE = 5.0 Vde)
(lC = 500 IlAde, VCE = 5.0 Vde)
(lC = 10 mAde, VCE = 5.0 Vde)
hFE
Collector-Emitter Saturation Voltage
(lC = 100 IlAde, IB = 10 IlAde)
(lC = 1.0 mAde, IB = 100 ",Ade)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 100 IlAde, IB = 10 IlAde)
(lC = 1.0 mAde, IB = 100 ",Ade)
VBE(sat)
-
-
-
Vde
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 1.0 mAde, VCE = 5.0 Vde, f = 100 MHz)
Noise Figure
(lC = 100 IlAde, VCE = 10 Vde, RS = 3.0 kohms,
f = 10 Hz to 15.7 kHz)
(1) Pulse Test: Pulse Width", 300 "'s, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-369
MHQ6002
CASE 632-08, STYLE 1
TO-116
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
30
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
5.0
Vde
IC
SOO
mAde
Collector Current -
•
Continuous
Total Device Dissipation
@TA = 2S"C
Derate above 2S"C
Po
Total Device Dissipation
@TC = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
1
14
13 12
11
10
9
8
Each
Transistor
Total
Device
0.65
3.72
1.9
10.88
Watts
mWf'C
1.3
7.43
4.6
26.3
Watts
mWf'C
COMPLEMENTARY TRANSISTORS
"C
NPNIPNP SIUCON
-65 to +200
TJ, Tstg
234567
QUAD
Refer to MHQ2222 for NPN graphs.'
ELECTRICAL CHARACTERISTICS
(TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
(VCB
(lC
=
(lC
(IE
=
10 mAde,lB
10 pAde, IC
= 50 Vde,
IE
= 3.0 Vde, IC
(VBE
=
= 0)
= 0)
= 0)
10 pAde, IE
= 0)
= 0)
V(BR)CEO
30
-
-
Vde
V(BRICBO
60
-
-
Vde
V(BR)EBO
S.O
Vde
-
-
ICBO
-
20
nAde
lEBO
-
-
30
nAde
-
-
ON CHARACTERISTICS
DC Current Gain(l)
(lC = 1.0 mAde, VCE
hFE
=
2S
10 Vde)
-
-
(lC
=
10 mAde, VCE
=
10 Vde)
3S
fJ
-
400
-
NPN
PNP
Cobo
-
6.0
4.S
-
NPN
PNP
Cibo
-
20
17
-
pF
-
ton
-
30
-
ns
toff
-
225
=
10 Vde)
40
(lC
= 300 mAde, VCE =
10 Vde)
20
(lc
(lC
Base-Emitter Saturation Voltage(1)
(lC
(lC
-
-
=
Collector-Emitter Saturation Voltage(l)
-
-
(lC
150 mAde, VCE
-
= 150 mAde, IB
= 300 mAde, IB
= 150 mAde, IB
= 300 mAde, IB
= lS mAde)
= 30 mAde)
= lS mAde)
= 30 mAde)
= SO
= 20 Vde,
VCE(sat)
VBE(sat)
-
0.4
1.4
Vde
1.3
2.0
Vde
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
f = 100 kHz)
Output Capacitance
Input Capacitance
(VCB
(VBE
=
=
(lC
10 Vde, IE
2.0 Vde, IC
mAde, VCE
= 0, f =
= 0, f =
1 MHz)
1 MHz)
MHz
pF
-
SWITCHING CHARACTERISTICS
Turn-On Time
(VCC = 30 Vde, VBE
IC = 160 mAde, IBl
= 0.5 Vde,
= 15 mAde)
= 150 mAde,
(VCC = 30 Vde,lc
IBl = IB2 = 15 mAde)
(1) Pulse Test: Pulse WIdth'" 300 pos, Dutv Cycle'" 2.0%.
'Refer to MHQ2907 for PNP graphs.
Turn-Off Time
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-370
-
ns
MM1748A
CASE 27-02, STYLE 1
TO-52 (TO-206ACI
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO(sus)
6.0
Vde
VCBO
15
Vde
VEBO
4.0
Vde
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -
Continuous
IC
150
mAde
PD
300
1.71
mW
mWrC
TJ, Tstg
-65 to +200
·C
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Operating and Storage Junction
Temperature Range
3 Collector
~~
1 Emitter
SWITCHING TRANSISTOR
THERMAL CHARACTERISTICS
NPNSIUCON
Characteristic
Thermal Resistance, Junction to Ambient
(1) R/lJA is measured with the device soldered into a typical printed circuit board.
=
ELECTRICAL CHARACTERISTICS (TA
25·C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
VCEO(sus)
6.0
-
V(BR)CBO
15
V(BR)EBO
4.0
-
-
-
30
90
10
15
55
20
20
VCE(sat)
-
0.2
0.3
Vde
VBEIsall
0.7
0.78
0.85
Vde
tr
SOO
850
-
2.0
3.0
pF
1.8
2.0
pF
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
(VCB = 5.0 Vde, IE = 0)
(VCB = 5.0 Vde, IE = 0, TA
(lC
=
(lC
=
(IE
=
10 mAde, IB
= 0)
= 0)
= 0)
10 !LAde, IE
10 /LAde, IC
ICBO
=
150·C)
-
Vde
-
Vde
-
Vde
5.0
5.0
nAde
p.Ade
ON CHARACTERISTICS(2)
DC Current Gain
(lC = 10 mAde, VCE
(lC = 10 mAde, VCE
(lC = 30 mAde, VCE
= 0.5 Vde)
= 0.5 Vde, TA =
= 1.0 Vde)
-55·C)
= 3.0
= 0.15 mAde)
Collector-Emitter Saturation Voltage
(lC
Base-Emitter Saturation Voltage
= 3.0 mAde, IB = 0.15 mAde)
(lC
-
hFE
mAde, IB
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 5.0 mAde, VCE = 4.0 Vde, f
=
100 MHz)
Output Capacitance
(VCB = 5.0 Vde, IE
= 0, f =
140 kHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
140 kHz)
MHz
Cibo
-
ts
-
4.0
6.0
ns
ton
-
12
15
ns
toff
-
12
15
ns
Cobo
SWITCHING CHARACTERISTICS
Storage Time
(VCC = 3.0 Vde, IC
=
5.0 mAde, IBI
= IB2 =
Turn-On Time
(VCC = 1.0 Vde, VBE(off) = 1.0 Vde, IC
IBI = 2.0 mAde, IB2 = 1.0 mAde)
Turn-Off Time
(VCC = 1.0 Vde, IC
=
10 mAde, IBI
=
=
IB2
5.0 mAde)
10 mAde,
=
1.0 mAde)
(1) Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-371
•
MM3001
thru
MM3003
CASE 79·04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
VCEO
Emitter-Base Voltage
VEBO
Collector Current -
•
Symbol
Collector-Emitter Voltage
Continuous
MM30011 MM300zl MM3003
IC
Total Device Dissipation
@TA= 25°C
Derate above 25°C
Po
Total Device Dissipation
@TC=25°C
Derate a bove 25°C
Po
Operating and Storage Junction
Temperature Range
150
I
200
I
250
5.0
200
TJ, Tstg
I
50
Unit
Vdc
Vdc
I
50
mAdc
1.0
5.71
Watt
mWf'C
5.0
2S.6
Watts
mWf'C
GENERAL PURPOSE
TRANSISTORS
-65 to +200
°c
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAdc, IS = 0)
150
200
150
Emitter-Base Breakdown Voltage
(IE = 10 pAdc, IC = 0)
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
Vdc
V(BR)CEO
MM3001
MM3002
MM3003
V(BR)EBO
ICBO
MM3001
MM3002, MM3003
-
-
5.0
-
-
1.0
5.0
150
-
-
7.0
15
Vdc
/L Adc
ON CHARACTERISTICS
DC Current Gain
(lC = 10 mAdc, VCE = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 20 Vdc, IE = 0, f = 100 kHz)
fr
Cobo
MM3001
MM3002, MM3003
pF
(1) Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-372
MHz
MM300S
thru
MM3007
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Symbol MM3005 MM3006 MM3007
Rating
Unit
Collector-Emitter Voltage
VCEO
60
80
100
Vdc
Collector-Base Voltage
VCBO
80
100
120
Vdc
Emitter-Base Voltage
VEBO
5_0
Vdc
IC
2_5
Adc
1.0
5.71
Watt
mWrC
8.0
45.6
Watts
mWrC
AUDIO TRANSISTORS
-65 to +200
"C
NPN SILICON
Collector Current -
Continuous
Total Device Dissipation
@TA = 25"C
Derate above 25"C
Po
Total Device Dissipation
@TC = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 pAdc, IE = 0)
60
80
100
80
100
120
V(BR)EBO
ICBO
MM3005
MM3006
MM3007
Emitter Cutoff Current
(VBE = 4.0 Vdc, IC = 0)
lEBO
-
Vde
V(BR)CBO
MM3005
MM3006
MM3007
Emitter-Base Breakdown Voltage
(IE = 100 pAdc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vde, IE = 0)
(VCB = 80 Vde, IE = 0)
(VCB = 100 Vdc, IE = 0)
Vdc
V(BR)CEO
MM3005
MM3006
MM3007
-
-
5.0
-
-
100
100
100
-
100
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 1.0 Vdc)
(lC = 150 mAde, VCE = 1.0 Vdc)
(lc = 200 mAde, VCE = 1.0 Vdc)
(lC = 250 mAde, VCE = 1.0 Vdc)
hFE
All Types
MM3005
MM3006
MM3007
-
40
50
50
50
250
250
250
-
Collector-Emitter Saturation Voltage
(lc = 150 mAde, IB = 15 mAde)
VCE(sat)
-
0.35
Vdc
Base-Emitter On Voltage
(lC = 150 mAde, VCE = 1.0 Vdc)
VBE(on)
0.60
0.75
Vdc
t-r
50
-
MHz
Cobo
-
15
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lc = 50 mAde, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
= 0, f =
100 kHz)
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-373
•
MM3009
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
~~'~"'
MM3009
Unit
VCEO
180
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
400
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
5.71
Watt
mWf'C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
4.0
22.8
Watts
mWf'C
TRANSISTOR
TJ, Tstg
-65 to +200
°C
NPNSILICON
Collector Current -
•
!/I
Symbol
Collector-Emitter Voltage
Continuous
Operating and Storage Junction
Temperature Range
3
2
1
1 Emitter
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAde, IB = 0)
V(BR)CEO
180
-
Vde
Emitter-Base Breakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
6.0
-
Vde
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 180 Vde, IE = 0)
ICEO
-
0.1
pAde
Emitter Cutoff Current
(VBE = 4.0 Vde, IC =. 0)
lEBO
-
0.1
I£Ade
30
40
30
-
-
tr
50
-
Cobo
-
4.0
pF
Cibo
-
20
pF
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAde, VCE = 10 Vde)
(lC = 10 mAde, VCE = 10 Vde)
(lC = 30 mAde, VCE = 10 Vde)
-
hFE
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 20 mAde, VCE = 20 Vde, f = 20 MHz)
Output Capacitance
(VCB = 20 Vde, IE
= 0, f =
1.0 MHz)
Input Capacitance
(VBE = 0.5 Vde, IC
= 0, f =
1.0 MHz)
(1) Pulse Test: Pulse Width
=
300I£S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-374
MHz
MM3903
MM3904
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vde
Collector-Base Voltage
VCBO
60
Vde
Emitter-Base Voltage
VEBO
6.0
Vde
IC
200
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
200
2.0
mW
mW/,C
Total Device Dissipation @ TC = 25'C
Derate above 25'C
Po
500
5.0
mW
mW/,C
TJ, Tstg
-55 to +125
'c
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 27-02, STYLE 1
TO-52 (TO-206AC)
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
NPN SILICON
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
(VCE
Collector Cutoff Current
=
(lC
(IE
=
(lc
=
=
10 pAde, IC
30 Vde, VEB(off)
(VCE
=
V(BR)CEO
40
-
Vde
= 0)
V(BR)CBO
60
-
Vde
0)
V(BR)EBO
6.0
-
Vde
IBEV
-
50
nAde
ICEX
-
50
nAde
1.0 mAde, IB
10 pAde, IE
=
=
=
0)
3.0 Vde)
30 Vde, VEB(9ff)
=
3.0 Vde)
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAde, VCE
hFE
=
1.0 Vde)
MM3903
MM3904
20
40
-
-
(lC
=
1.0 mAde, VCE
=
1.0 Vde)
MM3903
MM3904
35
70
(lC
=
10 mAde, VCE
=
1.0 Vde)
MM3903
MM3904
50
100
(lc
=
50 mAde, VCE
=
1.0 Vde)
MM3903
MM3904
30
60
(lc
=
100 mAde, VCE
MM3903
MM3904
10
15
-
-
0.2
0.3
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1.0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VCE(sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IB = 1,0 mAde)
(lC = 50 mAde, IB = 5.0 mAde)
VBE(sat)
-
150
300
Vde
Vde
0.65
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-375
-
0.85
0.95
•
MM3903, MM3904
ELECTRICAL CHARACTERISTICS (continued) (TA ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lC ~ 10 mAde, VCE ~ 20 Vdc, f ~ 100 MHz)
Output Capacitance
(VCB ~ 5.0 Vde, IE
~
0, f
~
100 kHz)
Input Capacitance
(VBE ~ 0.5 Vdc, IC
~
0, f
~
100 kHz)
Small-Signal Current Gain
(lC ~ 1.0 mAde, VCE ~ 10 Vde, f
MM3903
MM3904
tr
250
300
-
Cobo
-
4.0
pF
Cibo
-
8.0
pF
50
100
200
400
td
-
35
ns
tr
-
35
ns
175
200
ns
50
ns
-
hfe
~
1.0 kHz)
MHz
MM3903
MM3904
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
•
(VCC ~ 3.0 Vdc, VBE(off) ~ 0.5 Vde,
IC ~ 10 mAdc,IB1 ~ 1.0 mAde)
(VCC ~ 3.0 Vdc, IC ~ 10 mAde,
IB1 ~ IB2 ~ 1.0 mAde)
MM3903
MM3904
Fall Time
ts
tf
-
(1) Pulse Test: Pulse Width", 300 p,s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-376
MM390S
MM3906
CASE 27-02, STYLE 1
TO-52 (TO-206ACI
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
Rating
VCEO
40
Vdc
Collector-Base Voltage
VCBO
40
Vde
VEBO
5.0
Vde
IC
200
mAde
Po
360
2.0S
mW
mWrC
-55 to +200
"C
Emitter-Base Voltage
Collector Current -
Continuous
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Operating and Storage Junction
Temperature Range
TJ, Tstg
3 Collector
"~-EQ
1 Emitter
3
GENERAL PURPOSE
TRANSISTORS
THERMAL CHARACTERISTICS
Characteristic
PNP SILICON
Thermal Resistance, Junction to Ambient
Refer to 2N3250 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25"C unless otherwise
noted.)
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage
(lC = 10 pAde, IE = 0)
V(BR)CBO
40
-
Vde
Emitter-Sase Sreakdown Voltage
(IE = 10 pAde, IC = 0)
V(BR)EBO
5.0
-
Vde
ISEV
-
50
nAde
ICEV
-
50
nAde
-
Max
Unit
OFF CHARACTERISTICS
Sase Cutoff Current
(VCE = 30 Vde, VBE
= 3.0 Vde)
Collector Cutoff Current
(VCE = 30 Vde, VSE = 3.0 Vde)
ON CHARACTERISTICS!')
DC Current Gain
(lC = 0.1 mAde, VCE
-
hFE
=
1.0 Vde)
MM3905
MM390S
30
60
-
(lC
=
1.0 mAde, VCE
=
1.0 Vde)
MM3905
MM390S
40
80
-
(lC
=
10 mAde, VCE
=
1.0 Vde)
MM3905
MM390S
50
100
150
300
(lC
= 50
=
1.0 Vde)
MM3905
MM390S
30
60
-
(lC
=
MM3905
MM3906
10
15
-
-
0.25
0.4
mAde, VCE
100 mAde, VCE
=
1.0 Vde)
Collector-Emitter Saturation Voltage
(lC = 10 mAde, IS = 1.0 mAde)
(lC = 50 mAde, IS = 5.0 mAde)
VCE!sat)
Base-Emitter Saturation Voltage
(lC = 10 mAde, IS = 1.0 mAde)
(lC = 50 mAde, IS = 5.0 mAde)
VSE(sat)
-
MM3905
MM390S
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-377
Vde
Vde
0.S5
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(1)
(lC = 10 mAde, VCE = 20 Vde, f = 100 MHz)
-
0.85
0.95
•
MM3905, MM3906
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted)
Characteristic
Min
Max
Unit
Cobo
-
5.0
pF
Input Capacitance
(VBE = 0.5 Vdc, IC = 0, I = 100 kHz)
Cibo
-
10
pF
0.5
2.0
8.0
12
0.1 X 10- 4
1 X 10-4
5 X 10- 4
10 X 10- 4
so
100
200
400
1.0
3.0
40
60
Input Impedance
(lC = 1.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
Voltage Feedback Ratio
(lC = 1.0 mAdc, VCE = 10 Vdc,'1 = 1.0 kHz)
Small-Signal Current Gain
(lc = 1.0 mAdc, VCE = 10 Vdc, 1= 1.0 kHz)
Output Admittance
(lc = 1.0 mAdc, VCE = 10 Vdc, I = 1.0 kHz)
•
Symbol
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, I = 100 kHz)
Noise Figure
(lC = 100 ~dc, VCE = S.O Vdc, RS = 1.0 k ohm,
I = 10 Hz to 1S.7 kHz)
kohms
hie
MM3905
MM3906
hre
MM3905
MM3906
hIe
MM390S
MM3906
~mhos
hoe
MM390S
MM3906
NF
MM390S
MM3906
-
dB
-
5.0
4.0
td
-
35
ns
tr
-
35
ns
ts
-
200
225
ns
tl
-
60
7S
ns
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE(off) = O.S Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)
MM3905
MM3906
MM3905
MM3906
(1) Pulse Test: Pulse Width = 300
~,
Duty Cycle = 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-378
MM4000
thru
MM4003
MAXIMUM RATINGS
Rating
Symbol MM4000 MM4001 MM4002 MM4003
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Unit
Collector-Emitter Voltage
VCEO
100
150
200
250
Vdc
Collector-Base Voltage
VCBO
100
150
200
250
Vdc
Emitter-Base Voltage
VEBO
4.0
4.0
4.0
4.0
Vdc
Collector Current Continuous
IC
100
500
500
500
mAde
Total Device Dissipation
@TA = 25"C
Derate above 25"C
Po
0.6
3.42
1.0
5.71
1.0
5.71
1.0
5.71
Watt
mWrC
Total Device Dissipation
@ TC = 25"C
Derate above 25"C
Po
3.0
17.2
5.0
28.6
5.0
28.6
5.0
28.6
Operating and Storage
Junction
Temperature Range
TJ, Tstg
Watts
mWrC
-65 to +200
GENERAL PURPOSE
TRANSISTORS
"C
PNPSILICON
Refer to 2N3494 for graphs for MM4000.·
ELECTRICAL CHARACTERISTICS
(TA
=
25"C unless otherwise noted.1
Characteristic
Symbol
Min
Max
100
150
200
250
-
100
150
200
250
-
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(11
(lC = 10 mAde, IB = 01
Collector-Base Breakdown Voltage
(IE = 0, IC = 100 !LAdcl
V(BRICEO
MM4000
MM4001
MM4002
MM4003
Emitter-Base Breakdown Voltage
(IE = 100 !LAde, IC = 01
Collector Cutoff Current
(VCB = 50 Vdc, IE = 01
(VCB = 75 Vdc, IE = 01
(VCB = 150 Vdc, IE = 01
Vdc
V(BRICBO
MM4000
MM4001
MM4002
MM4003
V(BRIEBO
ICBO
MM4000
MM4001
MM4002, MM4003
Vdc
4.0
-
Vdc
!LAde
-
-
1.0
1.0
5.0
20
-
-
0.6
5.0
ON CHARACTERISTICS
DC Current Gain(11
(lc = 10 mAde, VCE
hFE
=
10 Vdcl
Collector-Emitter Saturation Voltage(11
(lc = 10 mAde, IB = 1.0 mAdcl
VCE(satl
MM4000, MM4001
MM4002, MM4003
Vdc
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 20 Vdc, IE
= 0, f =
Cobo
100 kHzl
MM4000
MM4001
MM4002, MM4003
-
(11 Pulse Test: PW '" 300 !'S, Duty Cycle'" 2.0%.
"Refer to 2N3634 for graphs for MM4001.
Refer to 2N4930 for graphs for MM4002 and MM4003.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-379
pF
6.0
10
20
•
MM400S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Vdc
Collector-Emitter Voltage
VCEO
60
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current -
IC
1.0
Adc
Total Device Dissipation @ TA
Derate above 25'C
Continuous
=
25'C
Po
1.0
5.71
Watt
mWfC
Total Device Dissipation @ TC
Derate above 25'C
=
25'C
Po
7.0
40
Watts
mWfC
TJ, Tst9
-65 to +200
'c
Symbol
Max
Unit
R8JC
25
'CIW
R8JA(l)
175
'CIW
Operating and Storage Junction
Temperature Range
CASE 79-04. STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PNPSILICON
(1) R8JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
I
Symbol
Min
Collector-Emitter Breakdown Voltage(2)
(lc = 10 mAde, IB = 0)
V(BR)CEO
60
Collector-Base Breakdown Voltage
(lC = 100 !-
!5
c
2000
UJLJJ257
VCE = 10 V MM4258
_ TJ = 25°C
~
"
:;
~
z
:li
./
3.0
W
'"
r--
2.0
- -
-
r-r-
r-~ ~ ......
~
'"=>
'"
300
0.5
1.0
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
0.7
50
0.2
0.3
0.5
0.7
FIGURE 3 -
TURN-ON TIME
FIGURE 4 -
100
70
IC/IS
10
3.0
5.0
7.0
10
20
TURN-OFF TIME
0
TJ 25°C
cs:
20
w
~
2.0
10 0
50
30
1.0
VR. REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAl
:§:
-
U
500 ;'
t--
MM4258
Ccb
~
~
<.0
,t:
0-
"13>-
./
;;:
""
~
Z
./
700
I
z
-- .....
"'
Vi--'
1000
II II
~/=~~o~ -
5.0
10
'"
,
.......
:§:
...;::::
ISl IS2
ICIIS -10
TJ - 25°C
0
"'
0
20
w
I
t,@VCC= 1.5 V
'"
;::
10
""
~@VCC=1.5V
7.0
5. 0
"'+-.
td@VSE(ofl) = 0
2.0
1.0
1.0
5.0
No. ""'I.
3. 0
2.0
3.0
5.0
III10
7.0
20
30
2.0
50
70
100
,.....
.)
3.0
'""'-
/
V
V
1. 0
1.0
2.0
3.0
5.0
7.0
10
-20
30
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-384
50
70
100
MM4258
FIGURE 5 -
SWITCHING TIME TEST CIRCUIT
Vss
ton
toff
Is
A2
Vout
Vss
Volts
Vee
Volts
Al
Ohms
A2
Ohms
R3
Ohms
Ie
rnA
lSI
rnA
IS2
rnA
-5.B
+9.B
+9.0
GND
-B.O
-10
-1.5
-1.5
-3.0
130
130
270
2.2 k
2.2 k
510
5k
5k
390
10
10
10
1.0
1.0
10
1.0
10
-
ZIn;' 100 kD.
A3
VIn~
ZIn=50D.
Ir< 1.0 ns
two 240 ns
Vin
Volts
tr< 1.0 ns
50 D.
FIGURE 6 -
DC CURRENT GAIN
FIGURE 7 -
100
"ON" VOLTAGES
1. 0
TJ
TJ=25 0 C
25 0 C
0
VCE=5.0V
0
Lo ~
......
:--
0.5 V
"""'-:1.-'
VBE(~') ~ IC/Isl ld
o. B
VBE@VCE
........ ::::
-l- V
1.0V
6
0
0
-
o. 2
l- i--"'"
VCE(.,,)@ IC/IB = 10
10
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC. COLLECTOR CURRENT (mAl
o
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IC. COLLECTOR CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
3-385
20
.....-""
30
50
•
MMSOOS
thru
MMS007
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
Unit
Collector-Emitter Voltage
VCEO
60
80
100
Collector-Base Voltage
VCBO
80
100
120
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
2.0
Adc
1.5
8.57
Watts
mWrC
8.0
45.7
Watts
mWrC
AUDIO TRANSISTORS
-65 to +200
·C
PNPSIUCON
Collector Current -
•
Symbol MM5005 MM5006 MM5007
Continuous
Total Device Dissipation
@TA= 25°C
Derate above 25°C
Po
Total Device Dissipation
@TC = 25°C
Derate above 2SoC
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS
Vdc
Vdc
(TA = 2SOC unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(lC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(lC = 100 !lAdc, IE = 0)
V(BR)CEO
MM5005
MM5006
MM5007
V(BR)CBO
MM500S
MMS006
MM5007
Emitter-Base Breakdown Voltage
(IE = 100 !lAdc, IC = 0)
Collector Cutoff Current
(VCB = SO Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
60
80
100
80
100
120
V(BR)EBO
ICBO
MM500S
MM500S
MM5007
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
lEBO
-
Vdc
Vdc
-
-
5.0
-
-
200
200
200
-
100
40
SO
50
SO
2S0
250
250
-
0.5
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(lC = 1.0 mAdc, VCE =
(lc = 150 mAdc, VCE =
(lC = 200 mAdc, VCE =
(lC = 250 mAdc, VCE =
hFE
1.0 Vdc)
2.S Vdc)
2.S Vdc)
2.S Vdc)
All Types
MMSOOS
MMSOOS
MMS007
-
-
Collector-Emitter Saturation Voltage
(lC = 150 mAdc, IB = 15 mAdc)
VCE(sat)
Base-Emitter On Voltage
(lC = 150 mAdc, VCE = 2.5 Vdc)
VBE(on)
0.S5
0.8
Vdc
iT
30
-
MHz
Cobo
-
20
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product(l)
(lC = SO mAdc, VCE = 10 Vdc, f = 20 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
(1) Pulse Test: Pulse Width", 300/Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-386
MM5262
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Vdc
Coliector·Emitter Voltage
VCES
60
Vdc
Collector· Base Voltage
VCBO
75
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
IC
2.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
5.71
Watt
mW/"C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
4.0
22.8
Watts
mW/"C
TJ, Tstg
-65 to +200
°c
Symbol
Max
Unit
ROJC
44
°CIW
ROJA(1)
175
°CIW
Rating
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
,f!! .:~"'""
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1
1 Emitter
GENERAL PURPOSE TRANSISTOR
NPN SILICON
(1) ROJA is measured with the device soldered into a typical printed circuit board.
Refer to 2N3724 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Coliector·Emitter Breakdown Voltage(2)
(lc = 10 mAde, IB = 0)
V(BR)CEO
40
Collector-Emitter Breakdown Voltage
(lC = 1.0 mAde, VBE = 0)
V(BR)CES
Collector-Base Breakdown Voltage
(lc = 10 !LAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 !LAde, IC = 0)
Typ
Max
Unit
-
-
Vdc
60
-
-
Vdc
V(BR)CBO
75
-
-
Vdc
V(BR)EBO
5.0
-
-
Vdc
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 75 Vdc, IE = 0)
ICBO
-
-
100
!LAde
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
ICES
-
-
10
!LAde
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
lEBO
-
-
100
!LAde
35
40
25
100
65
35
-
ON
CH~RACTERISTICS(2)
-
DC Current Gain
(lc = 100 mAde, VCE = 1.0 Vdc)
(lC = 500 mAde, VCE = 1.0 Vdc)
(lC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(lc = 1.0 Adc, IB = 100 mAde)
VCE(sat)
-
0.29
0.8
Vdc
Base·Emitter Saturation Voltage
(lc = 1.0 Adc, IB = 100 mAde)
VBE(sat)
-
0.94
1.4
Vdc
IT
-
350
-
MHz
Cobo
-
7.3
-
pF
Cibo
-
72
-
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lc = 50 mAde, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE
Input Capacitance
(VBE = 0.5 Vdc, IC
=
0, f
=
= 0, f =
1.0 MHz)
1.0 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
(2) Pulse Test: Pulse Width", 300 1'8, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-387
•
MM5415
MM5416
MAXIMUM RATINGS
Symbol
Rating
MM5415 MM5416
Unit
Collector-Emitter Voltage
VCEO
200
300
Vde
Collector-Base Voltage
VCBO
200
350
Vde
Emitter-Base Voltage
VEBO
4.0
7.0
Vde
IB
0.5
IC
1.0
Ade
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
1.0
6.7
Watt
Wf'C
Total Power Dissipation @ TC = 50°C
Linear Derating Factor
Po
10
0.057
Watts
mWf'C
TJ, Tstg
-65 to +200
°c
Base Current
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 79-04, STYLE 1
TO-39 (TO-205AD)
Ade
ffI ~~"~'
3
THERMAL CHARACTERISTICS
•
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RruC
17.5
°C/W
Thermal Resistance, Junction to Ambient
RruA
150
°C/W
Characteristic
2
1
1 Emitter
TRANSISTORS
PNP SILICON
Refer to 2N541!1 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted,)
Characteristic
Symbol
Min
Max
200
300
-
-
50
/'Ade
-
50
50
/'Ade
/'Ade
-
-
20
20
30
30
150
120
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lC = 10 mA, IB = 0)
VCEO(sus)
MM5415
MM5416
Collector Cutoff Current
(VCE = 150 Vde, IB = 0)
MM5415, MM5416
Collector Cutoff Current
(VCE = 175 Vde, IE = 0)
(VCE = 280 Vde, IE = 0)
MM5415
MM5416
Emitter Cutoff Current
(VBE = 4.0 Vde, IC = 0)
(VBE = 7.0 Vde, IC = 0)
MM5415
MM5416
ICEO
ICBO
-
lEBO
Vde
/'Ade
ON CHARACTERISTICS
DC Current Gain
(lC = 50 mAde, VCE = 10 Vde)
-
hFE
MM5415
MM5416
Collector-Emitter Saturation Voltage
(lc = 50 mAde, IB = 5.0 mAde)
MM5415, MM5416
Base-Emitter On Voltage
(lC = 50 mAde, VCE = 10 V)
MM5415, MM5416
VBE(on)
-
IT
15
-
MHz
-
25
pF
-
VCE(sat)
2.5
Vde
1.5
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(lC = 10 mAde, VCE = 10 Vde, f = 5.0 MHz)
Output Capacitance
(VCB = 10 Vde, f = 1.0 MHz)
Cobo
Current Gain - High Frequency
(lC = 5.0 mAde, VCE = 10 Vde, f = 1.0 kHz)
Ihfel
25
-
Real Part of Input Impedance
(lC = 5.0 mAde, VCE = 10 Vdc, f = 1.0 MHz)
Re(hie)
-
300
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
3-388
Ohms
MM6427
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vde
Collector-Base Voltage
VCBO
50
Vde
Emitter-Base Voltage
VEBO
12
Vde
IC
300
mAde
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
375
2.14
mW
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
1.25
7.15
Watts
TJ, Tstg
-65 to +200
"C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RWC
140
"CIW
Thermal Resistance, Junction to Ambient
RWA
467
"CIW
Collector Current -
Continuous
Operating and Storage Junction
Temperature Range
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
II ~.~,~,
3 Collector
wrc
'"
wrc
DARLINGTON TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA
=
NPN SILICON
25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Collector-Emitter Breakdown Voltage(1)
(lC = 1.0 mAde, IB = 0)
V(BR)CEO
40
Collector-Base Breakdown Voltage
(lC = 100 !-~.
1 Drain
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
30
Vdc
Drain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
-30
Vdc
10
15
mAdc
Po
300
2
mW
mWrC
Drain Current
Total Device Dissipation @ T A
Derate above 25·C
=
25·C
TJ
175
·C
Tstg
-65 to +200
·C
Junction Temperature Range
Storage Channel Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
2 Source
4
JFETs
LOW FREQUENCY, LOW NOISE
N-CHANNEL -
DEPLETION
25·C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
-30
-
-
Vdc
OFF CHARACTERISTICS
Gate·Source Breakdown Voltage
(lG = -10 pAdc, VOS = 0)
Gate Reverse Current
(VGS = -15Vdc,VOS
(VGS = -15Vdc, VOS
IGSS
= 0)
= 0, TA =
-
150·C)
Gate Source Cutoff Voltage
(10 = 0.1 nAdc, VOS = 15 Vdc)
VGS(off)
2N4220,A
2N4221,A
2N4222,A
Gate Source Voltage
(10 = 50 pAdc, VOS = 15 Vdc)
(10 = 200 pAdc, VOS = 15 Vdc)
(10 = 500 pAdc, VOS = 15 Vdc)
-
-
-
nAdc
-0.1
-100
Vdc
-4
-6
-8
Vdc
VGS
2N4220,A
2N4221,A
2N4222,A
-
-0.5
-1.0
-2.0
-
-2.5
-5.0
-6.0
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current"
(VOS = 15 Vdc, VGS = 0)
lOSS
2N4220,A
2N4221,A
2N4222,A
Static Drain-Source On Resistance
(VOS = 0, VGS = 0)
-
0.5
2.0
5.0
rOS(on)
2N4220,A
2N4221,A
2N4222,A
-
mAdc
-
3.0
6.0
15
500
400
300
-
Ohms
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance Common Source"
(VOS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance Common Source
(VOS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
(VOS = 15 Vdc, VGS
= 0, f =
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, f
=
IYfsl
2N4220,A
2N4221,A
2N4222,A
IYosl
2N4220,A
2N4221,A
2N4222,A
=
-
-
-
I'mhos
4000
5000
6000
/'Mhos
10
20
40
Ciss
-
4.5
6.0
pF
Crss
-
1.2
2.0
pF
Cosp
-
1.5
-
pF
1.0 MHz)
1.0 MHz)
Common-Source Output Capacitance
(VOS = 15 Vdc, VGS = 0, f = 30 MHz)
'Pulse Test: Pulse Width
1000
2000
2500
630 ms, Duty Cycle = 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-18
2N4220, A thru 2N4222, A
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
-
-
Unit
Max
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vdc, VGS = 0, RS = 1.0 megohm,
f = 100 Hz)
FIGURE 1 -
NF
2N4220A
2N4221A
2N4222A
NOISE FIGURE versus FREQUENCY
\
Vos= 15V
V&s=O
Rs= I Mil
NOISE FIGURE versus SOURCE RESISTANCE
Iii
:s
11~~=:5J
1\
12
r--..
10
'\
i!Ii
"-
r-o
.001
.01
I, FREQUENCY (kHz)
AGURE 3 -
0.1
10
Rs, SOURCE RfSlSTANCE IMegohmS)
FIGURE 4 -
COMMON SOURCE TRANSFER
CHARACTERISTICS
VGS(offl" -1.2 VOLTS
TYPICAL DRAIN CHARACTERISTICS
VGS(offl '" -1.2 VOLTS
1.2
t--
o
100
10
0.1
I
V"s=O
I-1kHz
I
I.........
.01
2.5
14
I II
11111
l
FIGURE 2 -
dB
2.5
2.5
1.2
I
V"s-OV
1.0
1.0
(
O.B
I
O.B
-0.2V
r--
1
.§
0.4
V
~
I
o.s
i
/
Vos = 15V
~
-0.4V
,.--
0.6
.§
L
0.4
-O.SV
0.2
~
0.2
-O.BV
r
10
15
20
--
V
-I.OV
-1.2
25
VDS, ORAIN.sOURCE VOLTAGE (VOLTSI
V
/
V
-0.8
-0.4
V"S, GATE.sOURCE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-19
/
/
•
2N4220, A thru' 2N4222, A
FIGURE 6 FIGURE 5 -
COMMON SOURCE TRANSFER
CHARACTERISTICS
VGS(off) '" -3.5 VOLTS
TYPICAL DRAIN CHARACTERISTICS
VGS(off) '" -3.5 VOLTS
I
(
I
Va,=O
VD, = 15V
I
I
-IV
/
~
I
V
-2V
'r
•
/
/
-3V
10
15
......
-5
25
20
-4
v"" DRAIN.sotJRCE VOLTAGE IYOLTS)
FIGURE 7 -
-I
-2
V.... GATE-SOURCE VOLTAGE IYOLTS)
FIGURE 8 -
COMMON SOURCE TRANSFER
CHARACTERISTICS
VGS(off) '" -5.8 VOLTS
TYPICAL DRAIN CHARACTERISTICS
VGS(~ '" -5.8 VOLTS
10
/
-3
10
I
V.,-O
I
V
VDS = 15V
/
/
/
V
-IV
I(
/
'/
V
-2V
V
/
V
-3V
/
If
V
-4V
........ /
-5V
o
10
VDS,
IS
20
-7
25
-6
DRAIN-SOURCE VOLTAGE (VOLTS)
NOTES:
-5
V
-4
-3
-2
Vas, GATE-SOURCE VOLTAGE (VOLTS)
1. Graphical data is presented for de conditions. Tabular data is
given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle =
10%). Under de conditions, self heating in higher lOSS units reduces lOSS (See Figure 10).
2. Figures 8, 9, 10: Data taken in a standard printed circuit with a
TO·18 typa socket mounting and 1/4" lead length'.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-20
-I
I
2N4338
thru
2N4341
CASE 22-03, STYLE 3
TO-18 (TO-206AAI
,/ ;.~~~
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VOS
60
Vdc
Drain-Gate Voltage
VOG
50
Vdc
Gate-Source Voltage
VGS
50
Vdc
VGSR
50
Vdc
Drain~Source
Voltage
Reverse Gate-Source Voltage
Gate Current
Total Device Dissipation @ TA
Derate above 25·C
=
25·C
Storage Temperature Range
IG
50
mA
Po
300
2.0
mW
mwrc
Tsta
-65 to +200
·C
JFETs
LOW FREQUENCY, LOW NOISE
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
50
-
-
0.1
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0!lA)
Gate Reverse Current
(VGS = -30 V)
IGSS
Gate Source Cutoff Voltage
(VOS = 15V,IO = 0.1!lA)
nA
Vdc
VGS(off)
2N4338
2N4339
2N4340
2N4341
Vdc
-0.3
-0.6
-1.0
-2.0
-1.0
-1.8
-3.0
-6.0
0.2
0.5
1.2
3.0
0.6
1.5
3.6
9.0
600
1800
2400
3000
4000
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
mA
lOSS'
2N4338
2N4339
2N4340
2N4341
(VOS = 15V)
SMALL-5IGNAL CHARACTERISTICS
Forward Transler Admittance
(VOS = 15 V, I = 1.0 kHz)
!£mhos
IYIsI'
2N4338
2N4339
2N4340
2N4341
Output Admittance
(VOS = 15 V, 1= 1.0 kHz)
BOO
1300
2000
IYosl
2N4338
2N4339
2N4340
2N4341
!£mhos
-
-
5.0
15
30
60
Input Capacitance
(VOS = 15 V, 1= 1.0 MHz)
Ciss
-
6.0
pF
Reverse Transler Capacitance
(VOS = 15 V, 1= 1.0 MHz)
Crss
-
2.0
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Volts, I
=
1.0 kHz, RG
=
1.0 MO)
'Pulse Test: Pulse Width", 630 ms, Duty Cycle'" 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-21
•
2N4351
CASE 20-03, STYLE 2
TO-72 (TO-206AFI
,/
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
25
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage"
VGS
30
Vdc
10
30
mAde
300
1.7
mW
mWI'C
BOO
mW
mW/'C
Drain Current
Total Device Dissipation @ T A
Derate above 25'C
= 25'C
Po
Total Device Dissipation @ TC
Derate above 25'C
= 25'C
Po
4.56
Junction Temperature Range
TJ
Storage Temperature Range
Tsta
175
-65 to
+ 175
4
1 Source
MOSFET
SWITCHING
'c
'c
N-CHANNEL -
ENHANCEMENT
"Transient potentials of ± 75 Volt will not cause gate-oxide failure.
ELECTRICAL CHARACTERISTICS
a
(TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)DSX
25
-
Vdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(10 = 10 pA, VGS = 0)
Zero-Gate-Voltage Drain Current
(YDS = 10 V, VGS = 0) TA = 25'C
TA = 150'C
lOSS
Gate Reverse Current
(YGS = ± 15 Vdc, VDS
10
10
nAdc
pAdc
IGSS
-
±10
pAdc
Gate Threshold Voltage
(VDS = 10 V, 10 = 10 pAl
VGS(Th)
1.0
5
Vdc
Drain-Source On-Voltage
(10 = 2.0 mA. VGS = 10 V)
VDS(on)
-
1.0
V
On-State Drain Current
(VGS = 10 V, VDS = 10 V)
ID(on)
3.0
-
mAde
IYfsl
1000
-
"mho
= 0)
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(YDS = 10 V, 10 = 2.0 rnA, f
Input Capacitance
(VDS = 10 V, VGS
=
1.0 kHz)
Reverse Transfer Capacitance
(VOS = 0, VGS = 0, f = 140 kHz)
=
rds(on
-
300
ohms
-
45
ns
65
ns
60
ns
100
ns
Crss
Drain-Substrate Capacitance
(VD(SUB) = 10 V, f = 140 kHz)
Orain-Source Resistance
(YGS = 10 V, 10 = 0, f
Cd(sub)
-
Ciss
= 0, f = 140 kHz)
5.0
pF
1.3
pF
5.0
pF
1.0 kHz)
SWITCHING CHARACTERISTICS
Turn-On Delay (Fig. 5)
Rise Time (Fig. 6)
Turn-Off Oelay (Fig. 7)
td1
10 = 2.0 mAde, VOS = 10 Vdc,
VGS = 10 Vdc)
(See Figure 9; Times Circuit Oetermined)
Fall Time (Fig. B)
td2
-
tf
-
tr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-22
2N4351
FIGURE 1 - FORWARD TRANSFER ADMITTANCE
5000
II
I I I I
'" 3000 I--f-
I
~
/"
'I/ V
~
0p~_
I;
2000
~
I
........ 1--
VDS ~ 10V
f~ 1.0 kHz
T. ~ 25'C
1000
700
500
300
V
,/
200
OJ
0,2
0,5
2,0
1.0
5,0
10
20
10, DRAIN CURRENT ImAl
FIGURE 3 - DRAIN·SOURCE "ON" RESISTANCE
FIGURE 2 - TRANSFER CHARACTERISTICS
k:: ...... V
20
T.~-55'C~
10
h(
I
l
!
J.
...
~V
' / t- T. ~ 125'C
2000
IV
T. ~ 25'C
'"
i~
I
VDS ~ IOV
-
I--
~
~
\
Ul
500
~,
"\ "
~
~
I
0,5
200
/
I
,
T. ~ 125'C
......
~ .......... ,............
T.~25'C- ~ . . . . . . . . ~k'-
'"
I
100
II
OJ
1
2
;;;;:
55'C
T.
f--
50
3
4
5
6
7
8
9
10
11
12
13
14 15
1
VGS, GATE-SOURCE VOLTAGE IVOLTS)
2
3
4
5
6
7
8
9 10
11
VGS , GATE·SOURCE VOlTAGE IVOLTS)
MOTOROLA SMALL·SIGNAL TRANSISTORS. FETs AND DIODES
4·23
I-- f-
\
1000
lE
0.7
0,2
ID~O
f~ 1kHz
\
~
.E
0,3
I
!:l
~
fA
z
l
5000
12
13 14 15
•
2N4351
FIGURE 4 - "ON" DRAIN-80URCE VOLTAGE
2.0
\
TA ~25°C
\
1.8
\
\
1.6
"-
10~500,.,A
1.4
~
~
~
~
S!
~
~
~
~
10 ~2.0mA
\\
1.2
10 ~5.0mA
\
1.0
,
" '"
...............
10 ~ lOrnA
I"\,
--- -,
.8
"""- ~
\
;
.6
-- ---
...........
I\.
.4
\
.2
""'"
\.
•
I'--...
10
15
14
12
Ve" GATE-SOURCE VOLTAGE IVOLTS)
SWITCHING CHARACTERISTICS
.
(TA = 25"C)
50 '-
~
,.
20
i
10
~
FIGURE 5 - TURN-ON DELAY TIME
.
~
-R,=b
...........
:::~
Vos
z
-
~
1-1-
- 1-17
.j
~
----- R,~ RD
.............
:i;
FIGURE 6 - RISE TIME
..
5V, VG,
....
I I I I I
Vo, ~ VG, ~ 15V
Vos = Vss = lOY
..... ....
lOY
VD, Vs, 10V
VD, ~ 5V, VG, ~ 10V
VD,
15V
~ Vs,~
VD,
-
5V, VG, -IOV I). Vo,
I
~ 15V, Ve , ~ 15V
10~~~~~~~~~~~~~
0.5
1.0
2.0
10, DRAIN CURRENT ImAl
10
5.0
0.5
~
100
;
50
tt
20
~
~
j
r-
200
~
;::
R,
10
I
- ~VD' 5V,V",
500
0'I
.-
.1.
7--- R, ~ Ro VD, - VG, -15V
...-...
t--:::::-:
t
7-_
-
./
VD,
V",
,.~
10V
200
""... r---..... t"
r.......
~
;::
g
~
t-.::::: ::f"oo.,
__
.;-
~~
1.0
2.0
5.0
.
~ ....
-~
I
I
I I
VD,
VG ,
10V
...... ~ ::1- ~
2.0
10, DRAIN CURRENT ImAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-24
I
....
VD, - 5V, V", -IOV
1.0
I
"'"' I--
R,~O
j---IR'iRr
VD,~V",~15V
II
0.5
10, DRAIN CURRENT ImAl
....... .....
50
-
10
~-:::: ~
100
20
0.5
I I
~
-..,.:
10V
10
5.0
FIGURE 8 - FALL TIME
FIGURE 7 - TURN-OFF DELAY TIME
500
2.0
10, DRAIN CURRENT ImAl
1.0
~;..
I
5.0
--
10
2N4351
FIGURE 9 - SWITCHING CIRCUIT and WAVEFORMS
capacitance (C gs = Ciss - Crss) has no charge. The drain voltage is at VOO, and thus the feedback capacitance (C rss ) is
charged to VOO. Similarly, the drain-substrate capacitance
(Cd(sub)) is charged to VOO since the substrate and source are
connected to ground.
During the turn-on interval, Cgs is charged to VGS (the input
voltage) through RS (generator impedance). Crss must be discharged to VGS - VO(on) through RS and the parallel combination of the load resistor (RO) and the channel resistance (rds)'
In addition, Cd(sub) is discharged to a low value (VO(on))
through RO in parallel with rds. During turn-off this charge flow
8.2 k
VDD o---'VVV--......-'V""'.....-o
10 k
OUTPUT TO SAMPLING
SET VD, -- 10 V
OSCILLOSCOPE
IN " - - - - - ' A A - - - - . J
2N4351
-
iSk'
I~
50
+1OV f-----1O I's-----+\
Vi,
is reversed.
t,-"t,< 2ns
Predicting turn-on time proves to be somewhat difficult since
the channel resistance (rds) is a function of the gate-source voltage (VGS). As Cgs becomes charged, VGS is approaching Vin
and rds decreases (see Figure 4) and since Crss and Cd(sub) are
charged through rds, turn-on time is quite non-linear.
If the charging time of Cgs is short compared to that of Crss
and Cd(sub), then rds (which is in parallel with RO) will be low
compared to RO during the switching interval and will largely
determine the turn-on time. On the other hand, during turn-off
rds will be almost an open circuit requiring Crss and Cd(sub) to
be charged through RO and resulting in a turn-off time that is
long compared to the turn-on time. This is especially noticeable
for the curves where RS = 0 and Cgs is charged through the
pulse generator impedance only.
The switching curves shown with RS = RO simulate the
switching behavior of cascaded stages where the driving source
impedance is normally the same as the load impedance. The set
of curves with RS = 0 simulates a low source impedance drive
DUTY CYCLE'" 2%
10V
VD'
The switching characteristics shown above were measured in
a test circuit similar to Figure 10. At the beginning of the switching interval, the gate voltage is at ground and the gate-source
such as might occur in complementary logic circuits.
FIGURE 10 - SWITCHING CIRCUIT MOSFET EQUIVALENT MODEL
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-25
•
2N4352
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
,I
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Drain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltege
VGS
±30
Vdc
Drain Current
10
30
mAdc
Totel Device Dissipation @ TA = 25°C
Derate above 25"<:
Po
300
1.7
mW
mWrC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Po
800
4.56
mW
mWrC
Rating
Junction Temperature Range
TJ
175
°c
Storage Temperature Range
Tsta
-65 to +175
°c
4
1 Source
MOSFET
SWITCHING
P-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
•
Characteristic
Symbol
Min
Max
Unit
V(BR)OSX
-25
-
Vdc
-
-10
-10
nAdc
pAdc
±10
pAdc
-5.0
Vdc
-1.0
V
OFF CHARACTERISncs
Drain-Source Breakdown Voltage
(10 = -10 pA, VGS = 0)
Zero-Gate-Voltage Drain Current
(VOS = -10 V, VGS = 0) TA = 25°C
TA = 150°C
lOSS
Gate Reverse Current
(VGS = ±30 V, VOS = 0)
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VOS = -10 V, 10 = -10 pAl
VGS(Th)
Drain-Source On-Voltage
(10 = -2.0 mA, VGS = -10 V)
VOS(on)
-1.0
-
10(on)
-3.0
rds(on)
-
Forward Transfer Admittance
(VOS = -10 V, 10 = 2.0 mA, f = 1.0 kHz)
IYfsl
1000
Input Capacitance
(VOS = -10 V, VGS = 0, f = 140 kHz)
Ciss
-
Reverse Transfer Capacitance
(VOS = 0, VGS = 0, f = 140 kHz)
Crss
Drain-Substrate Capacitance
(VOtSUB) = -10 V, f = 140 kHz)
Cd(sub)
-
On-State Drain Current
(VGS = -10VOS = -10V)
-
mA
SMALL-8IGNAL CHARACTERISnCS
Drain-Source Resistance
(VGS= -10V,10=0,f= 1.0 kHz)
600
ohms
-
/Lmho
5.0
pF
1.3
pF
4.0
pF
45
ns
65
ns
60
ns
100
ns
SWITCHING CHARACTERISnCS
Turn-On Delay
(Figures 5)
Rise Time
(Figures 6)
Turn-Off Delay
(Figures 7)
tdl
10 = -2.0 mAdc, VOS = -10 Vdc,
VGS = -10V)
(See Figure 9, Times Circuit Determined)
Fall Time
(Figures 8)
tr
td2
tf
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-26
2N4352
FIGURE 1 - FOWARD TRANSFER ADMmANCE
5000
-
I I I
IJ
DS " -IOV
.I
v
f~
-;;; 2000
~
-
25°C
1/
.5
w
~
!:
~
-
1 kHz
TA~
./
1000
'\
vV
~ 700
~"
~ SOO
300
V
"
/
200
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
10. DRAIN CURRENT {mAl
FIGURE 3 - DRAIN·SOURCE "ON" RESISTANCE
FIGURE 2 - TRANSFER CHARACTERISTICS
-20
~A ~ -55°C
--;
-10
-5
~
§
r- -
-2
TA
J,
-1
ID~O
f~
~
1kHz
e
~
VDse-iOV -
'I
~
~
1!l
~
~
.E
-0.5
5000
2000
""'II'
/, /
~ 12~OcllJ. V
~
az:
~
..... ,...,.....
". , /
,/
/
TA ~ 25°C
I
-
v:V
, / ./'
1000
'\.
\
500
i
~
,
'\
"'
\. "- r-... T 125°C
1"- i"'-... ...... ~
A '
i"'-... .........
I
200
-0.2
;::-t-r----r-TAr'
-·0.1
-2 -3 -4
-5 - 6 -7
100
-2 -3 -4
·8 -9 -10 -11 -12 .. 1314 · .. 15
-5 -6
MOTOROLA SMALL·SIGNAL TRANSISTORS. FETs AND DIODES
4·27
-r r--
c r---
-7 -8 -9 -10 -11 -12 -13 ·-14 -15
V"S. GATE·SOURCE VOLTAGE {VOLTSI
VGs . GATE·SOURCE VOLTAGE {VOLTSI
r;:;::
•
2N4352
FIGURE 4 - "ON" DRAIN-SOURCE VOLTAGE
-4.0
\
\
\
\.
\
\
\
I
··10 rnA
"- l'-..
\
-3.0
10
\
10
\
I
TA
"'-....
r-.....
...........
.. 5 rnA
25'C
r--.....
-... ~
"\.
""'ID' -2rnA
\
"ID' - 500 /I.A
-1.0
\
\
-
"'-.
"- i"'----.
"'"
...............
--
r---
r---....
'-
-0
-5
-3
.. 9
-)
-11
-13
-IS
Vs ,. GATE,SOURCE VOLTAGE (VOlTSI
SWITCHING CHARACTERISTICS
(TA = 2S"C)
FIGURE 6 - RISE TIME
FIGURE 5 - TURN-ON DELAY TIME
100
-;;;
.s
.. -..
50 f0- r-:"
~
";::
~
20
~
10
z
~
R,
- - - Rs
......
-
VO,
fo-
.j
100
t-
='-,
Vs ,
Vo,
10Vand
III
2
-0.5
I
I
II
)0
,I ,1,1
Vo,~Vs,=-15V
...
Vs ,
-;;;
too.
50
i1'
30
"'
20
.;
I
10
-10
-5.0
L-~~~
-0.5
____
~
100
~
I
~
j
Vs ,
15V
~
Vos - VG
~
__
J-~~~~
-10
-5.0
r-:J=+=P:J====1f==l==:J=::::+'2:T:r;r:q
IR, 0
~
-
>"
R,~RD
t!-...
10V ~ ~ -~
,
I
10
-1.0
__
-2.0
---
5
-0.5
1"-
I
~
10
500
0
~,~R~
--- - ---- -
20
-IOV ,.
FIGURE 8 - FALL TIME
-;VD,
50
~
10 • DRAIN CURRENT (mAl
R,
f""
Vs ,
~~
-1.0
FIGURE 7 - TURN-OFF DELAY TIME
"
--
...... " .................
~
15V
500
g
p...:::::",.
-
VD,
ID• DRAIN CURRENT (mAl
200
0
- --Rs- RD
r..~
VD,~Vs,~-15V
~
~
.....
7'
.s
IJ~ ..,,:.::-
-2.0
-1.0
R,
0
RD
-2.0
-5.0
-10
-0.5
-1.0
I
I
-2.0
ID• DRAIN CURRENT (mAl
ID. DRAIN CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-28
-5.0
-10
2N4352
thus the feedback capacitance (C rss ) is charged to VOO.
Similarly, the drain-substrate capacitance (Cd(sub)) is
charged to VOO since the substrate and source are connected to ground.
Ouring the turn-on interval, Cgs is charged to VGS
(the input voltage) through RS (generator impedance)
(Figure 11). Crss must be discharged to VGS - VO(on)
through RS and the parallel combination of the load
resistor (RO) and the channel resistance (rds) is a function of the gate-source voltage (VGS). As Cgs becomes
charged VGS is approaching Yin and rds decreases (see
Figure 4) and since Crss and Cd(sub) are charged
through rds, turn-on time is quite non-linear.
If the charging time of Cgs is short compared to that
of Crss and Cd(sub), then rds (which is in parallel with
RO) will be low compared to RO during the switching
interval and will largely determine the turn-on time. On
the other hand, during turn-off rds will be almost an
open circuit requiring Crss and Cd(sub) to be charged
through RO and resulting in a turn-off time that is long
compared to the turn-on time. This is especially noticeable for the curves where RS = 0 and Cgs is charged
through the pulse generator impedance only.
The switching curves shown with RS = RO simulate
the switching behavior of cascaded stages where the
driving source impedance is normally the same as the
load impedance. The set of curves with RS = 0 simulates a low source impedance drive such as might occur
in complementary logic circuits.
FIGURE 9 - SWITCHING CIRCUIT and WAVEFORMS
VDD
8.2k
SET VDS
IN
t----..---<>
10 v
10k
0---4"'~''''k--l1 ~N4352
OUTPUT TO SAMPLING
OSCILLOSCOPE
50
O-~~r-------~~~---
V;.
t r =t f --'::;2ns
OU~~ CY~~r 2%
VDS
-10V r--...c.+--r--------+-~--
The switching characteristics shown above were
measured in a test circuit similar to Figure 10. At the
beginning of the switching interval, the gate voltage is
at ground and the gate-source capacitance (C gs = Ciss
- Crss ) has no charge. The drain voltage is at VOO, and
FIGURE 10 - SWITCHING CIRCUIT with MOSFET EQUIVALENT
MODEL
-VOD
Rs
,
___ _
VDS
~~C... --+---~--~--~
L~'~
__
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-29
•
2N4391
thru
2N4393
CASE 22-03, STYLE 3
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
Value
Orain-Source Voltage
VOS
40
Vdc
Orain-Gate Voltage
VOG
40
Vdc
Gate-Source Voltage
Rating
Unit
VGS
40
Vdc
Forward Gate Cu rrent
IGF
50
mAdc
Total Oevice Oissipation @ TC' = 25·C
Oerate above 25·C
Po
1.8
10
Watts
mWrC
TJ
-65to +175
·C
Tsta
-65 to + 175
·C
Operating Junction Temperature Range
Storage Temperature Range
JFETs
SWITCHING
N-CHANNEL -
OEPLETION
Refer to MPF4391 for graphs.
"ELECTRICAL CHARACTERISTICS
•
I
(TA
=
25·C unless otherwise noted.)
.1
Characteristic
Symbol
Min
Max
Unit.
V(BR)GSS
40
-
Vdc
-
0.1
0.2
-4.0
-2.0
-0.5
-10
-5.0
-3.0
-
1.0
-
0.1
0.1
0.1
0.2
0.2
0.2
50
25
5.0
150
75
30
-
0.4
0.4
0.4
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 1.0 /AAdc, VOS = 0)
Gate Reverse Current
(VGS = 20 Vde, VOS = 0)
(VGS = 20 Vde, VOS = 0, TA = 150·C)
IGSS
Gate Source Voltage
(VOS = 20 Vde, 10 = 1.0 nAdc)
VGS
2N4391
2N4392
2N4393
Gate-Source Forward Voltage
(IG = 1.0 mAde, VOS = 0)
Orain-Cutoff Current
(VOS = 20 Vde, VGS
(VOS = 20 Vdc, VGS
(VOS = 20 Vdc, VGS
(VOS = 20 Vdc, VGS
(VOS = 20 Vdc, VGS
(VOS = 20 Vde, VGS
VGS(f)
10(off)
=
=
=
=
=
=
2N4391
2N4392
2N4393
2N4391
2N4392
2N4393
12 Vde)
7.0 Vde)
5.0 Vde)
12 Vdc, TA = 150·C)
7.0 Vdc, TA = 150·C)
5.0 Vde, TA = 150·C)
nAdc
/AAdc
Vde
Vde
nAde
/AAde
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Currentll)
(VOS = 20 Vdc, VGS = 0)
mAdc
lOSS
2N4391
2N4392
2N4393
Orain-Souree On-Voltage
(10 = 12 mAde, VGS = 0)
(10 = 6.0 mAde, VGS = 0)
(10 = 3.0 mAde, VGS = 0)
VOS(on)
2N4391
2N4392
2N4393
Static Orain-Souree On Resistance
(10 = 1.0 mAde, VGS = 0)
rOS(on)
2N4391
2N4392
2N4393
Vde
Ohms
-
-
30
60
100
-
30
60
100
SMALL-SIGNAL CHARACTERISTICS
Orain-Souree "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
rdslon)
2N4391
2N4392
2N4393
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-30
Ohms
2N4391 thru 2N4393
'ELECTRICAL CHARACTERISTICS
(continued) (TA - 25·C unless otherwise noted)
Characteristic
Input Capacitance
(VOS = 20 Vdc, VGS
= 0, f =
Reverse Transfer Capacitance
(VOS = 0, VGS = 12 Vdc, f
(VOS = 0, VGS = 7.0 Vdc, f
(VOS = 0, VGS = 5.0 Vdc, f
Symbol
Ciss
Min
Max
Unit
-
14
pF
-
3.5
3.5
3.5
1.0 MHz)
Crss
= 1.0 MHz)
= 1.0 MHz)
= 1.0 MHz)
2N4391
2N4392
2N4393
pF
SWITCHING CHARACTERISTICS
Rise Time
(lO(on) = 12 mAde)
(lO(on) = 6.0 mAde)
(l0(0'll = 3.0 mAde)
2N4391
2N4392
2N4393
Fall Time
(VGS(off) = 12 Vdc)
(VGS(off) = 7.0 Vdc)
(VGli\9fft = 5.0 Vdc)
2N4391
2N4392
2N4393
Turn-On Time
(lO(on) = 12 mAde)
(lO(on) = 6.0 mAde)
(lO(on) = 3.0 mAde)
2N4391
2N4392
2N4393
Turn-Off Time
(VGS(off) = 12 Vdc)
(VGS(off) = 7.0 Vdc)
(VGS(off) = 5.0 Vdc)
2N4391
2N4392
2N4393
ns
tr
-
tf
ton
toff
-
(1) Pulse Test: Pulse Width";; 100 "s, Duty Cycle";; 1.0%.
*In addition to JEDEC Registered Data,
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-31
5.0
5.0
5.0
ns
15
20
30
n.
15
15
15
ns
20
35
50
•
2N4416,A
CASE 20-03, STYLE 1
TO-72 (TO-206AF)
,/ ,~~~"
MAXIMUM RATINGS
Rating
Orain·Source Voltage
2N4416
2N4416A
Orain·Gate Voltage
Gate·Source Voltage
Gate Current
Total Oevice Oissipation @ TA
Oerate above 25°C
=
25°C
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
•
=
Symbol
Value
Unit
VOS
30
Vdc
VOG
30
35
Vdc
VGS
30
Vdc
IG
10
mAde
Po
300
1.71
mW
mWrC
TJ, Tstg
-65to +175
°C
24 1
, Source
JFET
VHF/UHF AMPLIFIERS
N-CHANNEL -
DEPLETION
2N4416, A
JAN JTX JTXV AVAILABLE
25°C unless otherwise noted.)
Symbol
Characteristic
Min
Max
30
35
-
-
100
200
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 pAdc, VOS = 0)
V(BR)GSS
2N4416
2N4416A
Gate Reverse Current
(VGS = 20 Vdc, VOS = 0)
(VGS = 20 Vdc, VOS = 0, TA = + 150°C)
IGSS
Vdc
pAdc
Gate Source Cutoff Voltage
(10 = 1.0 nAdc, VOS = 15 Vdc)
VGS(off)
-
6.0
Vdc
Gate Source Voltage
(10 = 0.5 mAde, VOS = 15 Vdc)
VGS
-1.0
-5.5
Vdc
VGS(f)
-
1.0
Vdc
IVfsl
4500
7500
JLmhos
Real Part 01 Forward Transler Admittance
(VOS = 15 Vdc, VGS = 0, I = 400 MHz)
Vls(real)
4000
-
JLmhos
Real Part 01 Input Admittance
(VOS = 15 Vdc, VGS = 0, 1= 100 MHz)
(VOS = 15 Vdc, VGS = 0, I = 400 MHz)
Vis(real)
Gate·Source Forward Voltage
(lG = 1.0 mAde, VOS = 0)
ON CHARACTERISTICS
Zero·Gate·Voltage Orain Current(l)
(VOS = 15 Vdc, VGS = 0)
SMALL·SIGNAL CHARACTERISTICS
Forward Transfer Admittance(l)
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)
Output Admittance
(VOS = 15 Vdc, VGS =
0, I
IVosl
JLmhos
-
-
100
1000
-'
50
-
75
100
-
2500
10,000
JLmhos
= 1.0 kHz)
Real Part 01 Output Admittance
(VOS = 15 Vdc, VGS = 0, I = 100 MHz)
(VOS = 15 Vdc, VGS = 0, I = 400 MHz)
Vos(real)
Imaginary Part of Input Admittance
(VOS = 15 Vdc, VGS = 0, I = 100 MHz)
(VOS = 15 Vdc, VGS = 0, I = 400 MHz)
Vis(imag)
Imaginary Part 01 Output Admittance
(VOS = 15 Vdc, VGS = 0, 1= 100 MHz)
(VOS = 15 Vdc, VGS = 0, I = 400 MHz)
Vos(imag)
JLmhos
-
JLmhos
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-32
JLmhos
1000
4000
2N4416, A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
Min
Symbol
Characteristic
Input Capacitance
(VOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
Reverse Transfer Capacitance
NoS = 15 Vdc, VGS = 0, f = 1.0 MHzl
Crss
Common Source Output Capacitance
(VOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
-
Max
Unit
4.0
pF
0.8
pF
2.0
pF
FUNCT10NAL CHARACTERISTICS
Noise Figure (Figures 3 and 4)
(VOS = 15 Vdc, 10 = 5.0 mAde, Rg = 1000 Ohms, f = 100 MHz)
(VOS = 15 Vdc, 10 = 5.0 mAde, Rg = 1000 Ohms, f = 400 MHz)
NF
Small-Signal Power Gain Common Source (Figure 1)
(VOS = 15 Vdc, 10 = 5.0 mAde, f = 100 MHz)
(VOS = 15 Vdc, 10 = 5.0 mAde, f = 400 MHz)
Gps
dB
-
2.0
4.0
18
10
-
dB
(1) Pulse Test: Pulse Width", 300 /los, Duty Cycle'" 1.0%.
POWER GAIN
FIGURE 1 - EFFECTS OF DRAIN CURRENT
14
f·l00MHz
10
V
~
~
,/
z
;;:
-
f-- l -
l..--"
16
V
to
'"~
~
./
12
:e
V
-
400 MHz
Tehannel = 250C_
VOS'15Vdc
VGS'OV
-:-
8.0
T
V
1.0
4.0
•
.-
I
B.O
8.0
10
10, DRAIN CURRENT (mA)
I
-
.
11
14
FIGURE 2 - 100 MHz and 400 MHz NEUTRALIZED TEST CIRCUIT
r--------~-----------,
Neutralizing
I
I
Coil
L1
,C2
C3
I
I
I
Input
+-To 60 n
Source
I
I
f-+'
\.\l\l~/
,c,l?j
!II~~~':..
·BO '--- \l~\)~ ~
-60
1,,,%
/'>'+---+---1
~'~/'--+--+--1
s>~'l
/
~~J~-+--r--1
#/
-t"',/
.16~IL20---•..1'00--..J.B'-0--'6"'0--•..140--..J'2'-0--'---'+20
Pin. INPUT POWER PER TONE (dB)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc. Tehannel = 25°C)
FIGURE 7 - REVERSE TRANSFER ADMITTANCE (V's)
FIGURE 6 -INPUT ADMITTANCE (Vis!
30
5.0
20
1
3,0
I
.§ s 2.0
/
~~~
r--~~)
'J.- .
r-%,c,
0
0
~,,@\)
0
7
5
O.3
10
~<:J-
L L
20
50 70 100
200
f, FREUUENCY (MHz)
~
.."
3011
t
0.5
~~
0.3
~
"'w
~~=~~
/
30
brs@IDS~
~E
~.§. 1.0
I:~
i z 0.7
0
0
0.25 lOSS
'"
~ ~ 0.2
~~
~ ~
O•I
grs@IOSS.0.25 10SS
~ ~O.O
.$ .0 0.0
5
10
500 700 1000
20
30
50 70 100
f, FRQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-34
1/
200
300
500 700 1000
2N4416, A
FIGURE 9 - OUTPUT ADMITTANCE (Yo.1
FIGURE 8 - FORWARD TRANSAOMITTANCE (Ylsl
20
a
1-g
0
s. 0
10
.s"li
UfI@IOSS
7.0
~.! 5. 0
~
..
t;!i!
3.0
w
2.0
Et
z
~~
;
Ufs II> 0,25 lOSS
~~
./
5
1, 0
O.
5
0"
~~
0.1
==
~~ 0.05
Iblsl @0.25 lOSS
1/
bos@ lOSS and 0.25 lOSS
,
. / L--"
2.0
iiu O. 2
V
Ibt,I@IOSS
I'"
0"1
0.3
a. - 0.2
i
10
....
!~
~ 1.0
c o. 7
no.
~
-;r1ii'
V
-
oal
,ijO.o2
./
20
30
50 70 100
200
I, FREQUENCY (MHzl
300
500 700 1000
0.0 1
10
gO'@IIO~
V
20
30
50 70 100
I, FREQUENCY (MHz)
200
COMMON SOURCE CHARACTERISTICS
S·PARAMETERS
FIGURE 10 - SII.
(VDS
= 15 Vdc, T channel = 25°C,
Data Points in MHzl
3300
FIGURE 11 - S120
300
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-35
iDs@0.25 10SS
I I II
300
T
500 700 1000
•
2N4416, A
FIGURE 12 - 521.
FIGURE 13 - 522 •
•
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vde, Tehannel = 25°C)
FIGURE 15 - REVERSE TRANSFER ADMITTANCE (Yrg)
FIGURE 14 -INPUT ADMITTANCE (Yig)
0.5
lon!lllmll
]''1;; 7.0
E ~ 5.0
..sE
~~
.~ t
9ig@IDSS
3.0
2.0
9rg@O.251 0SS
V/'
t--+-t-+-+-++H-++/-7''I-74--~+-+-I-+++i
"ii
t]"
-E
w
~ ~ 0.7 ===blg@IOSS
0.3
7
~ ~ 0.03
/
~ ~ 0,02
,/
0.25 IOSS-
~w
"'>
ww
> a: 0.0 I
~=to.oo 7
I;;
0.005
10
t, FREQUENCY (MHz)
9ig@ lOSS, 0.25 lOSS
20
30
50
70
100
t, FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-36
200
300
500 700 1000
2N4416, A
FIGURE 16 - FORWARD TRANSFER ADMITTANCE (Ylg)
FIGURE 17 - OUTPUT ADMITTANCE (YOg)
0
0
0
0
Rfg@IOSS
0
gfg@ 02SI OSS
o. 7 f-- bog@IOss.0.2S lOSS
o. S
no
~n~
zz
~;:
1/
/
0
!::fb
7
S
:!IE
1./
IA
~~
brg @0.2S lOSS
05
3D
SO
70
/
0.0 7
0.0 S
gog. lOSS
0.0 3
0.0 2
100
200
300
SOD 700
IDoo
10
[7'
I
iJ 0.0 1
V[J1
20
o. I
./
1-1-
1/
1M ./
2
t.)
~~
bfg@IOSS
3
1
10
3
EE o. 2
0
gog@0.2SI OSS
20
3D
50
70
V
100
COMMON GATE CHARACTERISTICS
FIGURE 18 - S11g
200
300
SOD 700 1000
f. FREQUENCY (MHz)
f. FREQUENCY (MHz)
S-PARAMETERS
(VOG = 15 Vdc. Tehannel = 25°C.
Data Points in MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-37
--
2N4416, A
FIGURE 21 - 522g
FIGURE 20 - 5219
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-38
2N4856,A
thru
2N4861,A
2N4856,2N4857,2N4858
JAN, JTX, JTXV AVAILABLE
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
Symbol
2N4856,A 2N4859,A
2N4857,A 2N4860,A
2N4858,A 2N4861,A
Unit
Drain-Source Voltage
VOS
+40
+30
Vdc
Drain-Gate Voltage
VOG
+40
+30
Vdc
Reverse Gate-Source Voltage
VGSR
-40
Forward Gate Current
IGF
Total Device Dissipation
@TA=25·C
Derate above 25·C
Po
Storage Temperature Range
Tsto
-30
Vdc
50
mAdc
360
2.4
mWrC
-65 to + 175
·C
,/I
2 Drain
-.;.~
1 Source
JFET
SWITCHING
mW
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Characteristic
Min
Max
-40
-30
-
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 1.0 /AAdc, VOS = 0)
Gate Reverse Current
(VGS = -20 Vdc, VOS
(VGS = -15 Vde, VOS
(VGS = -20 Vde, VOS
(VGS = -15 Vdc, VOS
IGSS
=
=
=
=
0)
0)
0, TA = 150·C)
0, TA = 150·C)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 0.5 nAde)
Vdc
V(BR)GSS
2N4856,A. 2N4857,A, 2N4858,A
2N4859,A. 2N4860,A, 2N4861,A
2N4856.A 2N4857.A, 2N4858,A
2N4859.A, 2N4860,A. 2N4861,A
2N4856,A. 2N4857,A. 2N4858,A
2N4859,A. 2N4860.A, 2N4861,A
-
-
-
0.25
0.25
0.5
0.5
-4.0
-2.0
-0.8
Drain Cutoff Current
(VOS = 15 Vdc, VGS = -10 Vdc)
(VOS = 15 Vdc, VGS = -10 Vdc, TA = 150·C)
/AAdc
Vde
VGS(off)
2N4856,A, 2N4859.A
2N4857,A, 2N4860.A
2N4858,A. 2N4861.A
nAdc
-10
-6.0
-4.0
10(off)
-
-
0.25
0.5
nAdc
/AAdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(l)
(VOS = 15 Vde, VGS = 0)
Drain-Source On-Voltage
(10 = 20 mAdc, VGS = 0)
(10 = 10 mAde, VGS = 0)
(10 = 5.0 mAde, VGS = 0)
lOSS
2N4856,A, 2N4859.A
2N4857,A. 2N4860.A
2N4858,A. 2N4861.A
VOS(on)
2N4856,A. 2N4859.A
2N4857,A, 2N4860.A
2N4858.A, 2N4861.A
-
50
20
8.0
100
80
-
0.75
0.5
0.5
-
-
-
25
40
60
-
18
10
-
8.0
4.0
3.5
mAde
Vdc
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
Ohms
rds(on)
2N4856.A, 2N4859,A
2N4857,A. 2N4860,A
2N4858,A. 2N4861.A
Input Capacitance
(VOS = 0, VGS = - 10 Vdc, f = 1.0 MHz) 2N4856 thru 2N4861
2N4856A thru 2N4861A
Ciss
Reverse Transfer Capacitance
(VOS = 0, VGS = -10 Vdc, f = 1.0 MHz) 2N4856 thru 2N4861
2N4856A, 2N4859A
2N4857A, 2N4858A, 2N4860A. 2N4861A
Crss
pF
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-39
•
2N4856, A thru 2N4861, A
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
-
6.0
5.0
6.0
6.0
10
8.0
ns
3.0
4.0
10
8.0
ns
SWITCHING CHARACTERISTICS (Sae Figura 1) (2)
Turn-On Delay Time
Rise Time
Turn-Off TIme
Conditions for 2N4856.A. 2N4859.A: 2N4856. 2N4859
2N4856A. 2N4859A
(VOO = 10 Vde. 10(on) = 20 mAde. 2N4857.2N4860
VGS(on) = O. VGS(off) = - 10 Vde) 2N4857 A. 2N4860A
2N4858.2N4861
2N4858A. 2N4861A
td(on)
Conditions for 2N4857.A. 2N4860.A: 2N4856.A. 2N4859.A
2N4857.A. 2N4860.A
(VOO = 10 Vde. 10(on) = 10 mAde. 2N4858.2N4861
VGS(on) = O. VGS(off) = -6.0 Vde) 2N4858A. 2N4861A
tr
2N4856. 2N4859
Conditions for 2N4858,A, 2N4861,A: 2N4856A. 2N4859A
2N4857.2N48eO
(VOO = 10 Vde. 10(on) = 5.0 mAde. 2N4857A.2N4860A
VGS(on) = O. VGS(off) = -4.0 Vde) 2N4858.2N4861
2N4858A; 2N4861A
toff
-
-
25
20
50
40
100
80
-
(1) Pulse Test: Pulse Width = 100 ms. Duty Cycle'" 10%.
(2) The 10(on) values are nominal; exact values vary slightly with transistor parameters.
•
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
(2N4856.A. 2N4859.AI
(2N4857.A.2N4860.A)
(2N4858.A.2N4861.A)
(2N4856,A.2N4859,A)
OUTPUT
INPUT
>---T"'r--t---\ri-,
-lOVlO---~;_~N~~~(on)
~
~ ~r
200ns
(2N4857.A.2N4860.A) -6.0 V
(2N4858.A.2N4861,A) -4.0 V
ton ~-1
td(on) - t ~-l
---l
:
I
TEST CIRCUIT
The input waveforms ara supplied by I generator with the following charactaristica:
Zout =50 ohm•• Duty Cycl. ~ 2.0%.
b. Wavaforms are monitored on an olCllloscopa with the following chaf8ctlriltlcl:
t, <0.75 n•• Rln > 1.0 megohm. Cln <2.5 pF.
I
:-tf
I -Jo-:-:10"'%---I
VOLTAGE WAVEFORMS
B.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-40
VGS(off)
i-l---- td(off)
tr-l :_ 1---:
10%
NOTES:
___
toff '---
ns
2N5245
thru
2N5247
CASE 29-04, STYLE 23
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
VGS
-30
Vdc
Gate Current
Unit
IG
50
mA
Total Device Dissipation @ TA
Derate above 25°C (Free Air)
=
25°C
PD
360
2.88
mW
mwrc
Total Device Dissipation @ TC
Derate above 25°C
=
25°C
PD
500
4.0
mW
mwrc
TL
260
°c
Lead Temperature
(1/16" from Case for 10 Seconds)
Storage Temperature Range
Tsta
-65 to
+ 150
JFET
HIGH FREQUENCY
AMPLIFIERS
N-CHANNEL -
°c
DEPLETION
Refer to ZN4416 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-30
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = -1.0 pA, VDS = 0)
-
Vdc
Gate Reverse Current
(VGS = -20 V, VDS = 0)
IGSS
-
-1.0
nA
Gate 1 Leakage Current
(VG1S = -20 V, VDS = 0, TA = 100°C)
IGISS
-
-0.5
pA
Gate Source Cutoff Voltage
(VDS = 15 V, ID = 10 mAl
Vdc
VGS(off)
2N5245
2N5246
2N5247
-1.0
-0.5
-1.5
-6.0
-4.0
-8.0
5.0
1.5
8.0
15
7.0
24
4500
3000
4500
7500
6000
8000
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = 15 V, VGS = 0, Pulsed: See Note 1)
mA
IDSS
2N5245
2N5246
2N5247
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 V, VGS = 0, f = 1.0 kHz)
Input Admittance
(VDS = 15 V, VGS = 0)
Re(Yis)
(100 MHz)
(400 MHz)
Output Admittance
(VDS = 15 V, VGS = 0, f = 1.0 kHz)
Output Conductance
(VDS = 15 V, VGS = 0)
I£mhos
IVfsl
2N5245
2N5246
2N5247
I£mhos
-
100
1000
-
50
50
70
IVosl
2N5245
2N5246
2N5247
I£mhos
-
Re(yos)
2N5245 (100 MHz)
2N5246
2N5247
2N5245 (400 MHz)
2N5246
2N5247
I£mhos
-
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-41
75
75
100
100
100
150
•
2N5245 thru 2N5247
ELECTRICAL CHARACTERISTICS (continued) (TA
~ 25'C unless otherwise noted)
Characteristic
Forward Transconductance
(VOS ~ 15 V, VGS ~ 0, f
Input Capacitance
(VOS ~ 15 V, VGS
~
0, f
Symbol
Min
Re(Yfs)
~
~
400 MHz)
2N5245
2N5246
2N5247
4000
2500
4000
Max
-
Unit
I'mhos
-
Ciss
-
4.5
pF
Crss
-
1.0
pF
-
3.0
12.0
1.0 Mhz)
Reverse Transfer Capacitance
(VOS ~ 15 V, VGS ~ 0, f = 1.0 MHz)
Input Susceptance
(VOS = 15 V, VGS ~ 0)
IM(Yis)
(100 MHz)
(400 MHz)
mmho
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS ~ 15 V, 10
NF
= 5.0 mA, R'G
Common Source Power Gain
(VOS ~ 15 V, 10 ~ 5.0 mA, R'G
~
1.0 kil)
= 1.0 kil)
•
Note 1: tp
=
2N5245 (100 MHz)
2N5245 (400 MHz)
(100 MHz)
(400 MHz)
100 ms, Duty Cycle
=
-
18
10
-
-
10%.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
4-42
dB
2.0
4.0
Gps
IM(YoS)
Output Susceptance
(VOS ~ 15 V, VGS ~ 0)
-
-
dB
I'mho
1000
4000
2N5457
thru
2N5459
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
1 Drain
,~~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Drain-Gate Voltage
VOG
25
Vdc
VGSR
-25
Vdc
Rating
Reverse Gate-Source Voltage
2 Source
Gate Current
IG
10
mAdc
Total Device Dissipation @ TA = 25"C
Derate above 25"C
Po
310
2.82
mWrC
TJ
125
"C
Tstg
-65 to +150
"C
Junction Temperature Range
Storage Channel Temperature Range
JFETs
GENERAL PURPOSE
mW
N-CHANNEL -
DEPLETION
Refer to 2N4220 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-25
Typ
Max
Unit
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -10 !LAdc, VOS = 0)
Gate Reverse Current
(VGS = -15 Vdc, VOS
(VGS = -15 Vdc, VOS
IGSS
= 0)
= 0, TA =
100"C)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 10 nAdc)
Gate Source Voltage
(VOS = 15 Vdc, 10
(VOS = 15 Vdc, 10
(VOS = 15 Vdc, 10
-
-
-
VGS(off)
-0.6
-1.0
-2.0
2N5457
2N5458
2N5459
-
nAdc
-1.0
-200
Vdc
-6.0
-7.0
-8.0
Vdc
VGS
= 100 !LAdc)
= 200 !LAde)
= 400 !LAde)
-
2N5457
2N5458
2N5459
-
-2.5
-3.5
-4.5
1.0
2.0
4.0
3.0
6.0
9.0
-
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current"
(VOS = 15 Vdc, VGS = 0)
mAdc
lOSS
2N5457
2N5458
2N5459
5.0
9.0
16
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance Common Source*
(VOS = 15 Vdc, VGS = 0, f = 1.0 kHz)
I'm has
IVfsl
2N5457
2N5458
2N5459
1000
1500
2000
-
5000
5500
6000
Output Admittance Common Source'
(VOS = 15 Vdc, VGS = 0, f = 1.0 kHz)
IVosl
-
10
50
I'm has
Input Capacitance
(VOS = 15 Vdc, VGS
Ciss
-
4.5
7.0
pF
Crss
-
1.5
3.0
pF
= 0, f =
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, f
=
1.0 MHz)
1.0 MHz)
"Pulse Test: Pulse Width", 630 ms; Duty Cvcle '" 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-43
•
2N5460
thru
2N5465
CASE 29-04, STYLE 7
TO-92 (TO-226AA)
2 Drain
MAXIMUM RATINGS
Rating
Symbol
2N5460
2N5461
2N5462
2N5463
2N5464
2N5465
Unit
VOG
40
60
Vdc
VGSR
40
60
Vdc
Drain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Junction Temperature Range
Storage Channel Temperature Range
~~
1 Source
IGm
10
mAde
Po
310
2.82
rnwrc
TJ
-65 to +135
·C
TS!ll_
-65 to +150
·C
JFET
AMPLIFIERS
mW
P-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
•
Symbol
Characteristic
Min
Typ
Max
-
-
-
5.0
5.0
1.0
1.0
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 pAdc, VOS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VOS
(VGS = 30 Vdc, VOS
(VGS = 20 Vdc, VOS
(VGS = 30Vdc, VOS
V(BR)GSS
2N5460, 2N5461, 2N5462
2N5463, 2N5464, 2N5465
IGSS
= 0)
= 0)
= 0, TA =
= 0, TA =
2N5460,
2N5463,
2N5460,
2N5463,
100·C)
100·C)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 1.0 pAdc)
Gate Source Voltage
(VOS = 15 Vdc, 10
(VOS = 15 Vdc, 10
(VOS = 15 Vdc, 10
40
60
2N5461,
2N5464,
2N5461,
2N5464,
2N5462
2N5465
2N5462
2N5465
-
-
0.75
1.0
1.8
-
6.0
7.5
9.0
-
-
-
4.0
4.5
6.0
-
-5.0
-9.0
-16
-
Vdc
VGS
=
=
=
0.5
0.8
1.5
2N5460, 2N5463
2N5461,2N5464
2N5462, 2N5465
0.1 mAde)
0.2 mAde)
0.4 mAdc)
nAdc
pAdc
Vdc
VGS(off)
2N5460, 2N5463
2N5461,2N5464
2N5462, 2N5465
-
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = 15 Vdc, VGS = 0,
f = 1.0 kHz)
lOSS
2N5460, 2N5463
2N5461, 2N5464
2N5462, 2N5465
-1.0
-2.0
-4.0
mAde
SMALL-SIGNAL CHARACTERISTICS
Forward Transier Admittance
(VOS = 15 Vdc, VGS = 0, f
IVfsl
=
1.0 kHz)
Output Admittance
(VOS = 15 Vdc, VGS
= 0, f =
1.0 kHz)
Input Capacitance
(VOS = 15 Vdc, VGS
= 0, f =
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, f
=
1000
1500
2000
2N5460, 2N5463
2N5461, 2N5464
2N5462, 2N5465
IVosl
Ciss
Crss
-
-
-
"mhos
4000
5000
6000
75
"mhos
5.0
7.0
pF
1.0
2.0
pF
1.0
2.5
dB
60
115
nVNHz
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vdc, VGS
NF
= 0, RG =
1.0 Megohm, f
Equivalent Short-Circuit Input Noise Voltage
(VOS = 15 Vdc, VGS = 0, f = 100 Hz, BW
=
100 Hz, BW
=
1.0 Hz)
en
=
-
1.0 Hz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-44
2N5460 thru 2N5465
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
VGSloff) = 2.0 VOLTS
FIGURE 1 -
;;(
~
13
3.0
~
1.5
0;
1.0
~ 2000
I-
:;;
1--
""\
........
~ 1000
/
.......... ~f
..............
0.5
w
u..
~
2S;C
.............. .....
0.2
0.4
0.6
~ SOO
12S"C
R:: ~
O.B
700
'\
B.O
~
6.0
E
4.0
c
•
3.S
4.0
:f
500
f
0.5~0.7
2.0
1.0
3.0
5.0
LI.,
jZ
7.0
10 DRAIN CURRENT (mA)
FIGURE 6 ~
IS~
VGSloff) = 5.0 VOLTS
10000
], 7000
w
~ SOOO
~
\
10
z
-
l-
VOS =15 V
700
= 5.0 VOLTS
VIOS =
;;(
-
J
_f-
I-
~~
2.0
~
z
Im"c
~ 1000
~
1.0
--
:;;
TA = -SSoc
3.0
~
4.0
S.O
~
~
6.0
7.0
B.O
i!...
VGS. GATE-SOURCE VOLTAGE (VOlTS)
~
I--
~ I-
700
5000.5
0.7
1.0
2.0
3.0
10 DRAIN CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-45
Vos - 15 V
f - 1.0 kHz
I I '
5.0
7.0
10
2N5460 thru 2N5465
FIGURE 7 - OUTPUT RESISTANCE
FIGURE 8 - CAPACITANCE VERSUS
VERSUS DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
1000
10
700
--
~500
.g
-
~300
w
'" 20O~
; 100
'"
t-
0
~ 50
-- ---
VOS = 15 V
I = 1.0 kHz
o
~
8.0 1\
3w
10 S = 3.0 mA
6.0 mA
0
6. 0
~
5. 0
~
4.
u~
3.
0.2
0.5
2.0
1.0
5.0
Ciss
............
01\.
O~,
....... 1---.....
CO"
1. 0
III
10
0.1
"'
2. o
0
C,ss
o
o
10
20
10
30
10, DRAIN CURRENT (mA)
VOS, ORAIN·SOURCE VOLTAGE (VOL IS)
FIGURE 9 - NOISE FIGURE
FIGURE 10 - NOISE FIGURE VERSUS
VERSUS FREOUENCY
III
9.0
•
a;
:s
7. 0
w
w
~
3.01-+-M-++H-11+t-f-+-t-++-++++t+t-t-H-+-r+++tt1
'"ii:
oz
II
VOS = 15 V
VGS = 0
I = 100 Hz
8.0
~
40
SOURCE RESISTANCE
10
~
r--
1.0 \
~
5
""N..
10 mA
::>
1= 1.0 MHz
VGS = 0
9.0
'"u:
5. 0
'"
4. 0
w
2.01-+~-P~hHl+t-~-+-t-++-++++t+t-t-H-t-r+++tt1
(5
z
u.:
6.0
I"
1.1.: 3. 0
I'
z
z
2. 0
......r--
1. 0
o
°1~0~~2~0~~~~5~OLU1~0~0~~20~0~3~00~5~00~~I,~00~0~2~00~0~3~00~OLi~I~0~,000
1000
RS, SOU RCE RESISTANCE (k Ohmsl
Vir
FIGURE 11 -
EQUIVALENT LOW FREQUENCY CIRCUIT
Crss
~I
100
10
1.0
I, FREQUENCY (Hz)
,~
~I
I Visl
Vi
Common Source
y Parameters for Frequencies
B,Iow30 MHz
Yis=jwCiss
Yos = jwC osp * + 11ro55
Vls= Vis
I
Yrs = -i wC rss
*Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE:
1 Graptncal data IS presented tor de condlttons. Tabular data IS
given for pulsed conditions (Pulse WIdth" 630 mi. Duty Cvcle "
10%1.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-46
10,000
2NS484
thru
2NS486
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
"I ~~."
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Gate Voltage
VOG
25
Vdc
Reverse Gate-Source Voltage
VGSR
25
Vdc
10
30
mAde
IG(I)
10
mAde
Po
310
2.82
mW
mWrC
TJ, Tstg
-65to +150
·C
Rating
Orain Current
Forward Gate Current
Total Oevice Oissipation @ TC = 25·C
Oerate above 25·C
Operating and Storage Junction
Temperature Range
3
2 Source
JFET
VHF/UHF AMPLIFIERS
N-CHANNEL -
DEPLETION
Refer to 2N44 16 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Charactaristic
Symbol
Min
V(BR)GSS
-25
Typ
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = -1.0 pAdc, VOS = 0)
Gate Reverse Current
(VGS = -20 Vdc, VOS
(VGS = -20 Vdc, VOS
IGSS
= 0)
= 0, TA =
100·C)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 10 nAdc)
-
-
-
-1.0
-0.2
-0.3
-0.5
-2.0
-
-
-3.0
-4.0
-6.0
1.0
4.0
8.0
-
5.0
10
20
3000
3500
4000
-
6000
7000
8000
-
-
-
-
100
1000
-
-
-
-
50
60
75
-
-
-
75
100
-
-
-
-
-
Vdc
nAdc
pAdc
Vdc
VGS(off)
2N5484
2N5485
2N5486
-
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = 15 Vdc, VGS = 0)
mAde
lOSS
2N5484
2N5485
2N5486
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f
Input Admittance
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
Output Admittance
(VOS = 15 Vdc, VGS
Output Conductance
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
=
15 Vdc, VGS
2N5484
2N5485
2N5486
Re(Yis)
= 0, f =
I'mhos
IYfsl
1.0 kHz)
= 0, f = 100 MHz)
= 0, f = 400 MHz)
2N5484
2N5485, 2N5486
IYosl
1.0 kHz)
2N5484
2N5485
2N5486
Re(vos)
= 0, f = 100 MHz)
= 0, f = 400 MHz)
Forward Transconductance
(VOS = 15 Vdc, VGS = 0, f
(VOS
=
2N5484
2N5485, 2N5486
I'mhos
I'mhos
-
I'mhos
I'mhos
Re(Yfs)
=
100 MHz)
2N5484
2500
= 0, f = 400 MHz)
2N5485
2N5486
3000
3500
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-47
-
-
•
2N5484 thru 2N5486
ELECTRICAL CHARACTERISTICS (continued) (TA -- 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Cis.
-
Reverse Transfer Capacitance .
(VOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
-
Output Capacitance
(VOS = 15 Vdc, VGS
Coss
-
-
-
-
2.5
3.0
-
4.0
-
-
-
2.0
-
4.0
Input Capacitance
(VOS = 15 Vdc, VGS
'=
0, f
=
= 0, f =
1.0 MHz)
Max
Unit
5.0
pF
1.0
pF
2.0
pF
1.0 MHz)
FUNCTIONAL CHARACTERIS11CS
Noise Figure
(VOS = 15 Vde, VGS = 0, RG = 1.0 Megohm, f = 1.0 kHz)
2N5484
(VOS = 15 Vdc, 10 = 1.0 mAde,
RG ~ 1.0 k ohm, f = 100 MHz)
2N5484
(VoS = 15Vdc, io = 1.0 mAde,
RG = 1.0 k ohm, f = 200 MHz)
2N5485, 2N5486
(VoS = 15 Vdc, iO = 4.0 mAde,
RG = 1.0 k ohm, f = 100 MHz)
2N5485, 2N5486
(VoS = 15 Vdc, 10 = 4.0 mAde,
RG = 1.0 k ohm, f = 400 MHz)
NF
Common Source Power Gain
(VoS = 15 Vde, 10 = 1.0 mAde,
(VoS = 15 Vdc, 10 = 1.0 mAde,
(VoS = 15 Vdc, 10 = 4.0 mAde,
(VoS = 15 Vdc, 10 = 4.0 mAde,
Gps
f = 100 MHz)
f = 200 MHz)
f = 100 MHz)
f = 400 MHz)
2N5484
2N5484
2N5485, 2N5486
2N5485, 2N5486
dB
16
18
10
14
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-48
dB
25
-
30
20
2N5555
CASE 29-04. STYLE 5
TO-92 (TO-226AA)
1 Drain
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
25
Vdc
Drain-Gate Voltage
VOG
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAde
Po
310
2.B2
mWrC
=
Total Device Dissipation @ TC
Derate. above 25'C
25'C
2 Source
JFET
SWITCHING
mW
Junction Temperature Range
TJ
-65 to + 150
'C
Storage Temperature Range
Tsto
-65 to +150
'c
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
25
-
Vdc
-
1.0
nAdc
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 pAdc, VOS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VOS
= 0)
Drain Cutoff Current
(VOS = 12 Vdc, VGS
(VOS = 12 Vdc, VGS
=
=
IGSS
10(off)
-10 V)
-10 V, TA
-
nAdc
-
10
2.0
pAdc
lOSS
15
-
mAde
VGS(f)
-
1.0
Vdc
Drain-Source On-Voltage
(10 = 7.0 mAde, VGS = 0)
VOS(on)
-
1.5
Vdc
Static Drain-Source On Resistance
(10 = 0.1 mAde, VGS = 0)
rOS(on)
-
150
Ohms
rds(on)
-
150
Ohms
Ciss
-
5.0
pF
Crs•
-
1.2
pF
= 7.0 mAde,
= -10 Vdc)
td(on)
-
5.0
ns
5.0
ns
= 7.0 mAde.
= -10 Vdc)
td(off)
-
15
ns
tf
-
10
ns
=
100'C)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current'
(VOS = 15 Vdc, VGS = 0)
Gate-Source Forward Voltage
(lG(f) = 1.0 mAde, VOS = 0)
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Drain-Source "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
Input Capacitance
(VOS = 15 Vdc, VGS
= 0, f =
Reverse Transfer Capacitance
(VOS = 0, VGS = 10 Vdc, f
=
1.0 MHz)
1.0 MHz)
SWITCHING CHARACTERISTICS
=
Turn-On Delay Time
(VOO
Rise Time
VGS(on) = 0, VGS(off)
(See Figure 1)
=
10 Vdc, 10(on)
Turn-Off Delay Time
(VOO
Fall Time
VGS(on) = O. VGS(off)
(See Figure 1)
10 Vdc, 10(on)
tr
'Pulse Test: Pulse Width < 300 p.s. Duty Cycle < 3.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-49
2N5555
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
I---
I
VDD
50 Ohm
COlxi.
'Ok
'Ok
50 Ohm Co••ill C.bl,.
PULSE
GENERATOR
1500hml)
-.!:-
loOk
i"
fr'I
.......
-:".
TEKTRONIX
:t
"l:"~
561
SAMPLING
"" SCOPE
INPUT
Hin = 50 Ohms
1
1
f
II
'0%
,II I
I I
- I 1I I
I
1
InpulPuJa
HI. TIme
1
-I
OUTPUT
HiIITi,",<1.0ns
FIIlTi... <1,Onl
Nomina' V,IiI, of "on" PIli. Width 400 ItS
DutyCycllS.1.0%
&
I
K. .
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-50
-I
1
...
'0%
VGSlon)
VGS(offl
1
1
1_ _ InputPuia
hllTunt
I
I
I
1
"I",}I_
--Itrl-
GlnIrItorSourct Impedlnce s SO Ohms
1- - - -
90.
1
I
-.!:-
INPUTPUL$E
50'
PuIseWidth---1
90'
I
I
--Itdl'ffll-
r
..% I
I
-:lfJ-
2N5638
thru
2N5640
CASE 29-04, STYLE 5
TO-92 (TO-226AAI
1 Drain
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
VOS
30
Vdc
Orain-Gate Voltage
VOG
30
Vdc
Rating
VGSR
30
Vdc
Forward Gate Current
Reverse Gate-Source Voltage
IGF
10
mAde
Total Oevice Oissipation @ TA = 25°C
Oerate above 25°C
Po
310
2.82
mW
mWrC
Junction Temperature Range
TJ
-65 to + 150
°c
Storage Temperature Range
Tst!!
-65 to +150
°c
,~-Eg)
3
2 Source
JFETs
SWITCHING
N-CHANNEL -
DEPLETION
Refer ta 2N5653 far graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Svmbol
Min
V(BR)GSS
30
-
-
1.0
1.0
nAdc
pAdc
-
1.0
1.0
1.0
1.0
1.0
1.0
nAdc
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 pAdc, VOS = 0)
Gate Reverse Current
(VGS = -15 Vdc, VOS
(VGS = -15 Vdc, VOS
= 0)
= 0, TA =
IGSS
100°C)
Drain Cutoff Current
(VOS
(VOS
(VOS
(VOS
(VOS
(VOS
=
=
=
=
=
=
15Vdc,VGS
15 Vdc, VGS
15 Vdc, VGS
15 Vdc, VGS
15 Vdc, VGS
15 Vdc, VGS
=
=
=
=
=
=
10(off)
2N5638
2N5639
2N5640
2N5638
2N5639
2N5640
-12Vdc)
-8.0 Vdc)
-6.0 Vdc)
-12 Vdc, TA = 100°C)
-8.0 Vdc, TA = 100°C)
-6.0 Vdc, TA = 100°C)
-
-
-
Vdc
pAdc
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(1)
(VOS = 20 Vdc, VGS = 0)
mAde
lOSS
2N5638
2N5639
2N5640
Orain-Source On-Voltage
(10 = 12 mAde, VGS = 0)
(10 = 6.0 mAde, VGS = 0)
(10 = 3.0 mAde, VGS = 0)
50
25
5.0
VOS(on)
-
Vdc
-
0.5
0.5
0.5
-
30
60
100
-
30
60
100
Ciss
-
10
pF
Crss
-
4.0
pF
2N5638
2N5639
2N5640
Static Orain-Source On Resistance
(10 = 1.0 mAde, VGS = 0)
-
rOS(on)
2N5638
2N5639
2N5640
-
Ohms
SMALL-SIGNAL CHARACTERISTICS
Static Orain-Source "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
Input Capacitance
(VOS = 0, VGS
-12 Vdc, f
=
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 0, VGS = -12 Vdc, f
=
1.0 MHz)
=
rds(on)
2N5638
2N5639
2N5640
Ohms
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-51
•
2N5638 thru 2N5640
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25"C unless otherwise noted.)
I
Symbol
Min
Max
Unit
2N5638
2N5639
2N5640
td(on)
-
2N5638
2N5639
2N5640
t,
-
4.0
6.0
8.0
ns
-
-
5.0
8.0
10
ns
2N5638
2N5639
2N5640
td(off)
5.0
10
15
ns
2N5638
2N5639
2N5640
tf
10
20
30
ns
Characteristic
SWITCHING CHARACTERISTICS
Turn-On Delay
Time
Rise Time
10(on)
6.0 mAde
3.0 mAde
VOO
=
10 Vde,
VGS(on)
Turn-Off Delay
Time
VGS(off)
RG'
Fall Time
= 12 mAde
=
= 0,
= -10 Vde,
10(on)
= 12 mAde
6.0 mAde
3.0 mAde
10(on)
= 12 mAde
6.0 mAde
3.0 mAde
50 ohms
10(on)
= 12 mAde
6.0 mAde
3.0 mAde
-
-
(1) Pulse Test: Pulse Width" 300 /LS, Duty Cycle" 3.0"10.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-52
2N5668
thru
2N5670
CASE 29-04. STYLE 5
TO-92 (TO-226AA)
1 Drain
,~~
MAXIMUM RATINGS
Symbol
Value
Drain-Source Voltage
Rating
VDS
25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
VGSR
25
Vdc
R.,..erse Gate-Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TA = 25·C
Derate above 25·C
Storage Channel Temperature Range
Unit
2 Source
ID
20
mAdc
IG(f)
10
mAdc
PD
310
2.82
mW
mWrC
Tsta
-65 to +150
·C
JFET
VHF AMPLIFIERS
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
25
-
-
-
-
-
2.0
2.0
-0.2
-1.0
-2.0
-
-4.0
-6.0
-8.0
1.0
4.0
8.0
-
5.0
10
20
1500
2000
3000
-
-
6500
6500
7500
-
125
800
-
-
-
-
20
50
75
-
10
25
35
50
100
150
-
-
Typ
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 !!Adc, VDS = 0)
Gate Reverse Current
(VGS = -15 Vdc, VDS
(VGS = -15 Vdc, VDS
IGSS
=
=
0)
0, TA
=
100·C)
Gate Source Cutoff Voltage
(VDS = t5 Vdc, ID = 10 nAdc)
nAdc
!!Adc
Vdc
VGS(off)
2N5668
2N5669
2N5670
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(l)
(VDS = 15 Vdc, VGS = 0)
mAdc
IDSS
2N5668
2N5669
2N5670
-
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f
=
IYfsl
1.0 kHz)
Input Admittance
(VDS = 15 Vdc, VGS
=
0, f
=
100 MHz)
Output Admittance
(VOS = 15 Vdc, VGS
=
0, f
=
1.0 kHz)
Output Conductance
(VDS = 15 Vdc, VGS
Re(Yis)
=
0, f
Forward Transconductance
(VOS = 15 Vdc, VGS = 0, f
Input Capacitance
(VOS
15 Vdc, VGS
=
2N5668
2N5669
2N5670
=
IYosl
= 100 MHz)
2N5668
2N5669
2N5670
/Lmhos
/Lmhos
Re(yos)
2N5668
2N5669
2N5670
/Lmhos
-
Re(Yfs)
=
100 MHz)
2N5668
2N5669
2N5670
0, f
=
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, f
=
1.0 MHz)
/Lmhos
1000
1600
2500
Ciss
C rss
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-53
/Lmhos
-
-
-
4.7
7.0
pF
1.0
3.0
pF
II
2N5668 thru 2N5670
ELECTRICAL CHARACTERISTICS (continued) (TA = 25"C unless otherwise noted)
Characteristic
Output Capacitance
(VOS = 15 Vdc,VGS
=
0, f
=
Symbol
Min
Typ
Max
Unh
Coss
-
1.4
4.0
pF
NF
-
-
2.5
dB
Gps
16
-
-
dB
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure (Figure 1)
(VOS = 15 Vdc, VGS
= 0, f =
100 MHz at RG'
=
1.0 k ohm)
Common Source Power Gain (Figure 1)
(VOS = 15 Vdc, VGS = 0, f = 100 MHz)
(1) Pulse Test: Pulse Width = 100 ms, Duty Cycle'" 10%.
FIGURE 1 - 100 MHz, POWER GAIN AND NOISE FIGURE TEST CIRCUIT
l2
C2
r-'.'
1.0-lOpF
Rs=600hms
•
RL =500hms
O.OO1j.lF
11
O.OI#-Cf
It ... 8.5 Turns of 114 AWG Tinned CGpper; Dil .... 3/S",'" (I 9" LOll!!.
Tappede'''' 2·1/2 Turnl (adjust to give RG = 1.0 k ohm),
Parallel ResistancllI40kohms;tunlSat""a.OpF.
l2 .... ,3.5 Turns 116 AWG Tinned Coppar; Oia.... 318", ... 1.2" long.
Tappad It "" STurns; Parallal Rasistenca= 40 k ohms,
tunesat ... 4.0pF.
L3 ""17 Turns of #28 AWG Enameled
CopperWira, Close Wound on 9/32"
Ceramic Form, Tuning Prollided bya
Powdered Iron Slug.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-54
O.lIlF
MAXIMUM RATINGS
2N6659 2N6660 2N6661
Symbol MPF6659 MPF6660 MPF6661
Rating
Unit
Orain-Source Voltage
VOS
35
60
90
Vdc
Orain-Gate Voltage
VOG
35
60
90
Vdc
Gate-Source Voltage
VGS
Orain Current Continuous (1)
Pulsed (2)
± 30
Vdc
2.0
3.0
Total Oevice Oissipation
2N6659
2N6660
2N6661
MPF6659
MPF6660
MPF6661
6.25
50
2.5
20
Derate above 25°C
-
TJ, Tstg
2N6661
MPF6661
~I
MPF6659,60,61
CASE 29-03, STYLE 22
TO-92 (TO-226AE)
1.0
8.0
-55 to +150
mWrC
2 Source
1
2
"C
TMOS SWITCHING
FET TRANSISTORS
(1) The Power ~issipation of the package may result in a lower continuous drain
current.
(2) Pulse Width", 300 p.s, Outy Cycle'" 2.0%.
ELECTRICAL CHARACTERISTICS (TA
thru
mWrC
Watts
Po
Operating and Storage Junction
Temperature Range
thru
Watts
Po
@TC~25"C
Total Oevice Oissipation
@ TA ~ 25"C
Oerate above 25"C
MPF6659
2N6659,60,61
CASE 79-04, STYLE 6
TO-39 (TO-205AD)
Adc
10
10M
2N6659
N-CHANNEL -
3
ENHANCEMENT
~ 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS ~ Maximum Rating, VGS ~ 0)
lOSS
-
-
10
p,Adc
Gate-Body Leakage Current
(VGS ~ 15 V, VOS ~ 0)
IGSS
-
-
100
nAdc
35
60
90
-
-
-
0.8
1.4
2.0
-
-
Orain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 10 p,A)
V(BR)OSX
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
Vdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VOS ~ VGS, 10 ~ 1.0 mAl
VGS(Th)
Orain-Source On-Voltage
(VGS ~ 10 V, 10 ~ 1.0 A)
VOS(on)
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
-
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
Vdc
Vdc
-
1.8
3.0
4.0
-
0.8
0.9
0.9
1.5
1.5
1.6
-
-
-
-
-
1.8
3.0
4.0
1.0
2.0
-
Ciss
-
30
50
pF
Reverse Transfer Capacitance
(VOS ~ 25 V, VGS ~ 0, f ~ 1.0 MHz)
Crss
-
3.6
10
pF
Output Capacitance
(VOS ~ 25 V, VGS ~ 0, f ~ 1.0 MHz)
Coss
-
20
40
pF
9fs
170
-
-
mmhos
(VGS ~ 5.0 V, 10 ~ 0.3 A)
Static Orain-Source On Resistance
(VGS ~ 10 Vdc, 10 ~ 1.0 Adc)
-
rOS(on)
2N6659, MPF6659
2N6660, MPF6660
2N6661, MPF6661
On-State Orain Current
(VOS ~ 25 V, VGS ~ 10 V)
-
10(on)
Ohms
Amps
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS ~ 25 V, VGS
~
0, f
~
1.0 MHz)
Forward Transconductance
(VOS ~ 25 V, 10 ~ 0.5 A)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-55
•
2N6659 thru 2N6661, MPF6659 thru MPF6661
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS(1)
Rise Time
t,
-
-
5.0
ns
Fall Time
tf
-
-
5.0
ns
-
5.0
ns
-
5.0
ns
Turn-On Time
ton
Turn-Off Time
toff
(1) Pulse Test: Pulse Width"" 300
pJ3.
Duty Cycle"" 2.0%.
RESISTIVE SWITCHING
FIGURE 1 -
FIGURE 2 -
SWITCHING TEST CIRCUIT
SWITCHING WAVEFORMS
+ 25 V
To Sampling Scope
2\3 rn-20dB-l--_~==-:::j~50. n Inpul
Vout
Pulse Generator
r-----,
Output
Vout
Inverted
•
Input
FIGURE 3 -
RGURE 4 -
VGS(th) NORMALIZED versus TEMPERATURE
2.0
~
1.6
§?
91.2
<>
'"~
i=
O.S
~
VOS = VGS
10 = 1.0mA
---
o
-.. -..
o
-SO
FIGURE 5 -
-VGS
'"
!z
/J
az
'fi
~ 1.2
§
§
0.4
~~
~
-
~
.-!?!
7.0V
.,e; ~
~~
~
S.OV
5.0 V
4.0 V
1.0
2.0
3.0
VOS. ORAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 6 -
4.0
CAPACITANCE versus DRAIN-TO-SOURCE VOLTAGE
100
= 10 V
S.OV
VGS = 0 V
SO
~
tl
z SO
~
<3
40
~
\
1\
<.i
5.0 V
20
4.0 V
10
20
30
VOS. ORAIN·TO-SOURCE VOLTAGE (VOLTS)
~ :::;;.-
<>
7.0 V
'I
'f/.
1.2
.-p
./
~ O.S
r--
S.OV
~ 0.8
~
90.4
ffi~
9.0V
....-
/
~
az
OUTPUT CHARACTERISTICS
/'
l.S
VG;:.!!
~ 1.6
I---
150 ('C)
50
100
TJ. JUNCTION TEMPERATURE
2.0
$
ON-REGION CHARACTERISTICS
2.0
~ 0.4
~
Vin
~
CiSS I
........ ......
I\,
Coss
"-
40
10
Crss
20
30
40
SO
VOS. ORAIN·TO-SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-56
60
2N6659 thru 2N6661, MPF6659 thru MPF6661
FIGURE 7 - ON-VOLTAGE versus TEMPERATURE
10
~
g
5.0
w
'"~
S;
~
1.0
:::l
~Z~
0.5
0.4
~ 0.3
_ 0.2
>~c
=VGS
10V
ID
------ ----
0.1
-50 -30 -10
...- ...-
~
...-
...i-- ....-
10
30
50
70
90
TJ. JUNCTION TEMPERATURE IOC)
110
1.5 A
1.0~
0.5 A
~
130
150
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-57
2N6782
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
100
Vdc
Drain-Gate Voltage (RGS = 1.0 mOl
VDGR
100
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous
Pulsed
ID
IDM
3.5
14
PD
15
0.12
Watts
W/,C
TJ, Tstg
-55to 150
'c
Thermal Resistance Junction to Case
ROJC
8.33
'CIW
Thermal Resistance Junction to Ambient
ROJA
175
'CIW
TL
300
'c
CASE 79-05, STYLE 6
TO-39 (TO-205AF)
3 Drain
'''~ :~
Adc
Total Power Dissipation @ TC = 25'C
Derate above 25'C
Operating and Storage
Temperature Range
,
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Characteristic
•
Symbol
Min
V(BR)DSS
100
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
= 0, ID = 0.25 mAl
Zero Gate Voltage Orain Current
(VOS = 100 V, VGS = 0 V)
(VOS = 80 V, VGS = 0 V, TJ = 125'C)
lOSS
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
= 20 Vdc, VOS = 0)
= - 20 Vdc, VOS = 0)
-
Vdc
"Adc
250
1000
IGSSF
-
100
nAdc
IGSSR
-
-100
nAdc
VGS(th)
2.0
4.0
Vdc
rOS(on)
-
0.6
1.08
Ohm
ON CHARACTERISTICS'
Gate Threshold Voltage (VDS
= VGS, 10 = 0.5 mAl
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 2.25 Adc)
Orain-Source On-Voltage (VGS
=
Forward Transconductance (VDS
TA
TA
10 V, 10
= 5.0 V,
= 25'C
= 125'C
= 3.5 Adc)
10 = 2.25 Adc)
-
2.1
Vdc
9fs
1.0
3.0
mhos
pF
VOS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS = 0,
f = 1.0 MHz)
Reverse Transfer Capacitance
Ciss
60
200
Coss
40
100
Crss
10
25
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Rise TIme
(VOO
Turn-Oft Oelay Time
= 34 V, 10 = 2.25 Rated 10,
Rgen = 50 ohms)
Fall Time
td(on)
-
15
tr
-
25
td(off)
-
25
tf
ns
20
SOURCE-DRAIN DIODE CHARACTERISTICS'
Oiode Forward Voltage
Forward Turn-On Time
Reverse Recovery Time
0.75
1.5
Vdc
ton
-
Negligible
ns
trr
-
200
ns
VSO
(IS = Rated 10(on),
VGS = 0)
'Pulse Test: Pulse Width", 300 ,,", Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-58
2N6784
MAXIMUM RATINGS
Symbol
Rating
Drain-Source Voltage
Value
Unit
VOSS
200
Vdc
VOGR
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous
Pulsed
10
10M
2.25
9.0
Po
15
0.12
Watts
W/,C
TJ, Tstg
-55 to 150
'c
Thermal Resistance Junction to Case
R8JC
8.33
'CIW
Thermal Resistance Junction to Ambient
R8JA
175
'CIW
TL
300
'C
Drain-Gate Voltage (RGS
=
1.0 mil)
CASE 79-05, STYLE 6
TO-39 (TO-205AF)
f!!
'''~ :~
30r.in
Adc
=
Total Power Dissipation @ TC
25'C
Derate above 25°C
Operating and Storage
Temperature Range
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
TMOS FET
TRANSISTOR
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
200
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS
=
Zero Gate Voltage Drain Current
(VOS = Rated VOSS, VGS = 0)
(VOS = 0.8 Rated VOSS, VGS = 0, TJ
0, 10
=
0.25 rnA)
lOSS
=
125'C)
Gate-Body Leakage Current, Forward (VGS
=
Gate-Body Leakage Current. Reverse (VGS
= -
20 Vdc, VOS
=
20 Vdc, VOS
0)
=
IGSSF
0)
IGSSR
-
Vdc
!-
g§
1
r/7,25'f/
VOS = 10V
-20
+20
+60
T. TEMPERATURE I'C)
-..;;;:
r-....
+100
~
+140
Figure 4. Temperature versus Gate Threshold Voltage
Figure 3. Temperature versus Static Drain-Source
On-Resistance
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-70
3NlSS
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
,I
MAXIMUM RATINGS
Symbol
Valua
Unit
Drain-Source Voltage
Rating
VOS
±35
Vdc
Drain-Gate Voltage
VOG
±50
Vdc
Gate-Source Voltage
VGS
±50
Vdc
10
30
mAde
Po
300
2.0
mW
mWI'C
Drain Current
Total Device Dissipation @ TA
Derate above 25'C
=
25'C
Junction Temperature Range
. TJ
-65 to +175
'C
Storage Channel Temperature Range
Tsta
-65 to + 175
'C
4
1 Source
MOSFET
SWITCHING
P-CHANNEL -
ENHANCEMENT
Refer to 3N157 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
V(BR)OSX
-35
lOSS
-
-
-1.0
-1000
nAdc
IGSS
-
-
+1000
+10
pAdc
Unit
OFF CHARACTERISTICS
= -10 ,..Adc, VG = Vs = 0)
= -10 Vdc, VGS = 0)
= -10 Vdc, VGS = 0, TA =
Gate Reverse Current (VGS = +50 Vdc, VOS = 0)
(VGS = +25 Vdc, VOS = 0)
Resistance Drain Source (10 = 0, VGS = 0)
Resistance Gate Source Input (VGS = -25 Vdc)
Gate Forward Leakage Current (VGS = - 50 Vdc, VOS = 0)
(VGS = - 25 Vdc, VOS = 0)
Drain-Source Breakdown Voltage
(10
Zero-Gate-Voltage Drain Current (VOS
(VOS
125'C)
rOS(off)
1 x 10+ 10
RGS
-
IG(I)
-
1 x 10+ 16
-
Vdc
-
Ohms
-
Ohms
-
-1000
-10
pAdc
-
-3.2
Vdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VOS
Drain-Source On-Voltage
(10
=
=
-10 Vdc, 10
=
-10,..Adc)
-2.0 mAde, VGS
Static Drain-Source On Resistance
On-State Drain Current (VOS
=
(10
=
=
-10 Vdc)
0 mAde, VGS
-15 Vdc, VGS
=
3N155
=
-10 Vdc)
-10 Vdc)
VGS(Th)
-1.5
VOS(on)
-
-
-1.0
Vdc
rOS(on)
-
-
600
Ohms
mAde
10(on)
-5.0
-
-
-
-
400
350
SMALL-SIGNAL CHARACTERISTICS
Drain-Source Resistance
(VGS = -10 Vdc, 10 = 0, f
(VGS = -15 Vdc, 10 = 0, f
=
=
rds(on)
1.0 kHz)
1.0 kHz)
=
1.0 kHz)
Input Capacitance
(VOS = -15 Vdc, VGS
=
140 kHz)
=
-10 Vdc, f
Ciss
-
-
Crss
-
-
1.3
pF
Cd(sub)
-
-
4.0
pF
td
-
tr
-
ts
-
tf
-
IYIsI
Forward Transfer Admittance
(VOS = -15 Vdc, 10 = - 2.0 mAde, I
Reverse Transfer Capacitance
(VOS = 0, VGS = 0, I = 140 kHz)
Drain-Substrate Capacitance
(VO(SUB) = -10 Vdc, f = 140 kHz)
Ohms
1000
4000
p.mhos
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay
Rise Time
Turn-Off Delay
(VDO =' -10 Vdc, 10(on) = -2.0 mAde,
VGS(on) = -10 Vdc, VGS(off) = 0)
Fall Time
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-71
-
45
p.s
-
65
ns
-
60
ns
-
100
ns
3N157
CASE 20-03, STYLE 2
TO-72 (TO-206AFI
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage'
Rating
VDS
±35
Vdc
Drain-Gate Voltage'
VDG
±50
Vdc
/
Gate-Source Voltage'
3 2
VGS
±50
Vdc
Drain Current*
ID
30
mAde
Total Device Dissipation @ TA = 25°C
Derate above 25°C'
PD
300
1.7
mW
mWrC
Junction Temperature Range'
TJ
-65to +175
°c
Tsto
-65to+175
°C
Storage Channel Temperature Range'
G:te
1
4
1 Source
MOSFET
AMPLIFIER AND SWITCHING
P-CHANNEL -
ENHANCEMENT
"JEDEC Registered Limits
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
•
Characteristic
Symbol
Min
Typ
V(BR)DSX
-35
-
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(lD = -10 pAdc, VG = Vs = 0)
Zero-Gate-Voltage Drain Current (VDS = -15 Vdc, VGS = 0)
(VDS = -35 Vdc, VGS = 0)
IDSS
Gate Reverse Current'
IGSS
Input Resistance
(VGS = +25 Vdc, VDS = 0)
IVGS = +50 Vdc, VDS = 0)
(VGS = -25 Vdc)
RGS
Gate Source Voltage'
(VDS = -15 Vdc, ID = - 0.5 mAde)
-
Vdc
-1.0
-10
nAdc
pAdc
-
+10
+10
pAdc
nAdc
-
1 x 10+ 12
VGS
-
-
-
Ohms
Vdc
-
-5.5
-
-10
-1.0
-10
-1.0
-1.5
-
-3.2
ID(on)
-5.0
-
Forward Transfer Admittance'
(VDS = -15 Vdc, ID = - 2.0 mAde, f = 1.0 kHz)
IVfsl
1000
-
4000
I'mhos
Output Admittance"
(VDS = -15 Vdc, ID = -2.0 mAde, f = 1.0 kHz)
IVosl
-
60
I'mhos
Input Capacitance'
(VDS = -15 Vdc, VGS = 0, f = 140 kHz)
Ciss
-
5.0
pF
Reverse Transfer Capacitance'
(VDS = -15 Vdc, VGS = 0, f = 140 kHz)
Crss
-
1.3
pF
-
4.0
pF
Gate Forward Current"
(VGS
(VGS
IVGS
(VGS
=
=
=
=
-25
-50
-25
-50
3N157
Vdc,
Vdc,
Vdc,
Vdc,
VDS
VDS
VDS
VDS
=
=
=
=
0)
0)
0, TA = + 55°C)
0, TA = +55°C)
-1.5
IG(f)
-
pAdc
nAdc
nAdc
pAdc
ON CHARACTERISTICS
Gate Threshold Voltage'
(VDS = -15 Vdc, ID = -10 pAdc)
Vdc
VGS(Th)
3N157
On-State Drain Current'
(VDS = -15 Vdc, VGS = -10 Vdc)
-
mAde
SMALL-SIGNAL CHARACTERISTICS
Drain-Substrate Capacitance
(VD(SUB) = -10 Vdc, f = 140 kHz)
Cd(sub)
Noise Voltage
(RS = 0, BW = 1.0 Hz,
VDS = -15 Vdc, ID = -2.0 mAde, f = 100 Hz)
(RS = 0, BW = 1.0 Hz,
VDS = -15 Vdc, ID = -2.0 mAde, f = 1.0 kHz)
-
NV/v'iTz
en
-
'JEDEC Registered Limits
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-72
300
-
120
500
3N157
FIGURE 1 - FORWARD TRANSCONDUCTANCE
~
1
~
~
'"'"'"
10,000
100
VOS--15V
TA - 250 C
t=1.o kHz
Minimum
Typical
f=
5,000 c---
.
w
~
~
~
I-
FIGURE 2 - OUTPUT TRANSCONDUCTANCE
]"
50
]
w
u
~
1000
500
'"
I
~'"
~-
z'"
-
.,...-
V
z
I---- I-'
,,/
10
13
VOS--15V
~ 5.0
TA=25'C~
I!:
t-1.o kHz
'""
0
0.5
1.0
5.0
/"
II
1. 0
0.1
10
0.5
10, DRAIN CURRENT (mAl
1.0
5.0
II
10
10, DRAIN CURRENT (mAl
FIGURE 4 - BIAS CURVE
FIGURE 3 - FORWARD TRANSCONDUCTANCE
versus TEMPERATURE
•
0
0
o
"
.~
N
I'-~
~
i:l
~ :=::::.:: ~-
;#! ~-2 0
~
--:::;
VDS-15 V
.
-3 O~ f-,c
t 1.0 k~Z
-50
25
105
65
125
-2.0
145
J
\
0
\\
1\ '. I'
\. ......
\. .......... ~
0
0
"-
\\
0
........
-2.0
-4.0
-6.0
-8.0
TA=25'C
--
.:...-
-10
__ Maxim~~±--Typical
-90% Curve
r--...
IO =-lolmA_
i
1.
~
1.0
!
0.5
·12
·14
RS=10MIl
~
f".
RS~ll.o Mil
i: o. 1
~
~~
/-1.omA
_-o.SmA
-16
,
'">
!! 0.05
~-2.omA
-14
·10
!lj
r--
_-5.omA
-2.omA
-12
-8.0
-6.0
FIGURE 6 - EQUIVALENT INPUT NOISE VOLTAGE
FIGURE 5 - "ON" DRAIN·SOURCE VOLTAGE
0
-4.0
VGS. GATE·SOURCE VOLTAGE (VOLTS)
TA. AMBIENT TEMPERATURE (DC)
·5. 0
VDS = -15 Vdc
if"
-0. 1
-15
-55
TA = 125'C
f
-1.0
-
'"
:2
i
-411
-10
i
.-
....-:;:::::- ~
TA=55 0C
-18
-20
of
RS'·IOo kll
r- r
VOS'·15V
f - 1-10 • -2.0 mA
r--r0.0 110
iii iilii
100
1000
f, FREQUENCY (Hz)
VGS, GATE·SOURCE VOL TAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-73
tO,ooo
100.000
3N157
SWITCHING CHARACTERISTICS
(TA = 250 C)
FIGURE 7 - TURN-ON DELAY TIME
FIGURE 8 - RISE TIME
100
100
--
0
w
'">-
;::
~
0
c
z
c
........
t---
RG =~:t
RG'RD
0
VDrV,GS=-15V
0
~
~
::>
I-
5.0
IJ
2.0
-0.5
~ YDS=YGS=-lOY
I- 1-1-
I
I I
-1.0
-2.0
0
-5.0
-D.5
-10
-5.0
-10
ID. DRAIN CURRENT (mAl
FIGURE 10 - FALL TIME
500
RG 0 1---RG=Ra
200
.........
;:: 100
•
-2.0
-1.0
FIGURE 9 - TURN-OFF DELAY TIME
I
-
50
~
~
1"-_
~ 20
-
-. -!. r--,......
I-
10
VDS - VG --10 V
5.0
-0.5
[7-
../
200
I I II
YDS·VGS
c
~
i-.
.~
500
"
~c
r-
I- 1-1-
0
ID. DRAIN CURRENT (mAl
!
~
---~f--
f-I-
VDS = YGS = -10 V and -15 y--VDS = VGS = -10 Y
r- ~-H-+'-
;9
0
1N!::::
"t--.....I r--..
__
I'--.
I-YDS=YGS=-15Y
II
0
RG =ot:
RG= RD
..,....
!w
,.;::
15Y
--
100
I:::,..
t--.
t..:
" '"
--RG=O
---Rr~D
YDS=VGS·-15V
~
~
50
~
r-.
"
"
YDS=YGS'-lOV
20
-5.0
-2.0
-10
-D.5
-4::_
V- r-- ~-;;;::
I
10
-1.0
III
r::-.,..........
-1.0
-2.0
-5.0
-10
ID. DRAIN CURRENT (mAl
ID. DRAIN CURRENT (mAl
FIGURE 11 - SWITCHING CIRCUIT and WAVEFORMS
YDD
SET VDS = 10 Y +-""",1,,0k"""---1t--o V OUTPUT TO SAMPLING
~~ .. _.J
OSCILLOSCOPE
IN~4.5kll
50
0
tr"'tf:s2.0 ns
PW= 10",
DUTY CYCLE
~
2.0%
YDS
-lOY
The switching characteristics shown above were measured
in a test circuit similar to Figure 11. At the beginning of the
switching interval, the gate voltage is at ground and the gate
source capacitance (C gs 0 Crss 0 Crss ) has no charge. The drain
voltage is at VOO and thus the feedback capacitance (C rss ) is
charged to VOO. Similarly, the drain substrate capacitance
(Cd(sub» is charged to VOO since the substrate and source are
connected to ground.
Ouring the turn-on interval Cgs is charged to VGS (the input
voltage) through RG (generator impedance) (Figure 12). Crss
must be discharged to VGS VO(on) through RG and the parallel combination of the load resistor (RO) and the channel
resistance (rds). In addition, Cd(sub) is discharged to a low
value (VO(on» through RO in parallel with rds. Ouring turn-off
this charge flow is reversed.
Predicting turn-on time proves to be somewhat difficult since
the channel resistance (rds) is a function of the gate source
voltage (VGS). As Cgs becomes charged VGS is approaching
Yin and rds decreases (see Figure 5) and since Crss and Cd(sub)
are charged through rds, turn-on time is quite non-linear.
If the charging time of Cgs is short compared to that of Crss
and Cd (sub), then rds (which is in parallel with RO) will be low
compared to RO during the switching interval and will largely
determine the turn-on time. On the other hand. during turnoff rds will be almost an open circuit requiring Crss and Cd(sub)
to be charged through RO and resulting in a turn-off time that
is long compared to the turn-on time. This is especially noticeable forthe curves where RG 0 0 and Cgs is charged through
the pulse generator impedance only.
The switching curves shown with RG 0 RO simulate the
switching behavior of cascaded stages where the driving
! - -.....~-+--------+-.....;~--
FIGURE 12 - SWITCHING CIRCUIT with MOSFET
EQUIVALENT MODEL
-YDD
RD
source impedance is normally the same as the load impedance.
The set of curves with RG 00 simulates a low source impedance
drive such as might occur in complementary logic circuits.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-74
3N169
thru
3N171
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
25
Vdc
Drain-Gate Voltage
VDG
±35
Vdc
Gate-Source Voltage
VGS
±35
Vdc
ID
30
mAde
Drain Current
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
PD
300
1.7
mW
mWf'C
Total Device Dissipation @ TC
Derate above 25°C
~
25°C
PD
800
4.56
mW
mWf'C
Junction Temperature Range
TJ
175
°c
Storage Temperature Range
Tstg
-65 to + 175
°c
2 Source
MOSFETs
SWITCHING
N-CHANNEL -
ENHANCEMENT
Refer to 2N4351 for grephs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)DSX
25
-
-
10
1.0
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(lD = 10 pAdc, VGS = 0)
Zero-Gate-Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
(VDS = 10 Vdc, VGS = 0, TA = 125°C)
IDSS
Gate Reverse Current
(VGS = -35 Vdc, VDS = 0)
(VGS = -35 Vdc, VDS = 0, TA = 125°C)
IGSS
-
10
100
0.5
1.0
1.5
1.5
2.0
3.0
Vdc
nAdc
pAdc
pAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 pAdc)
Vdc
VGS(Th)
3N169
3N170
3N171
Drain-Source On-Voltage
(lD = 10 mAde, VGS = 10 Vdc)
VDS(on)
-
2.0
On-State Drain Current
(VGS = 10 Vdc, VDS = 10 Vdc)
ID(on)
10
-
mAde
rds(on)
-
200
Ohms
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 2.0 mAde, I = 1.0 kHz)
IVlsl
1000
-
I'mhos
Input Capacitance
(VDS = 10 Vdc, VGS = 0, 1= 1.0 MHz)
Ciss
-
5.0
pF
Reverse Transler Capacitance
(VDS ~ 0, VGS ~ 0, I = 1.0 MHz)
Crss
-
1.3
pF
Drain-Substrate Capacitance
(VD(SUB) = 10 Vdc, f = 1.0 MHz)
Cd(sub)
-
5.0
pF
-
3.0
ns
Vdc
SMALL-5IGNAL CHARACTERISTICS
Drain-Source Resistance
(VGS = 10 Vdc, ID = 0, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Turn-On Delav Time
Rise Time
Turn-Off Delav Time
Fall Time
td(on)
(VDD ~ 10 Vdc, ID(on) = 10 mAde,
VGS(on) = 10 Vdc, VGS(off) = 0,
RG' = 50 Ohms)
See Figure 1
tr
td(off)
tl
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-75
10
ns
3.0
ns
15
ns
•
3N169 thru 3N171
FIGURE 1 -
SWITCHING TIME TEST CIRCUIT
Voo
RL = VOO -(rd,(on) +50)
10
0.001 ~F
INPUT
(SCOPE A)
+
0.1
Ir
tr <0.33 ns
"",0.33 ris
PW- 0.4~s
Duty Cycle'" 1.0%
-
~F
~-+===---. TOSCOPE
50 OHM
A
50
INPUT PULSE:
8-
OSCILLOSCOPE:
tr..;O.4ns
Zin <: 50 Ohms
•
/
/
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-76
T0500HM
SCOPE B
BF244,A,B,C
CASE 29-04, STYLE 22
TO-92 (TO-226AA)
1 Source
!~~.!::2~ ~-@
TO-92 (TO-226AA)
2 Source
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
±30
Vdc
Orain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
10
100
mAdc
IG(f)
10
mAdc
Po
360
2.88
mW
mW;oC
Tsta
-65 to +150
°C
Rating
Drain Current
Forward Gate Current
Total Oevlce Oissipation @ T A
= 25°C
Derate above 25°C
Storage Channel Temperature Range
JFET
VHF/UHF AMPLIFIERS
N-CHANNEL - OEPLETION
Refer to 2N4416 for graphs.
I
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 1.0 f'Adc, VOS = 0)
Gate-Source
(VOS = 15 Vdc, 10
= 200
V(BR)GSS
-
-
0.4
0.4
1.6
3.2
-
7.5
2.2
3.B
7.5
-0.5
-
-8
-
-
5
VGS
BF245(11.
BF245A,
BF245B,
BF245C,
f'A)
BF244(2)
BF244A
BF244B
BF244C
Gate-Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 10 nA)
Gate Reverse Current
(VGS = 20 Vdc, VOS
30
VGS(off)
IGSS
= 0)
V
V
V
nA
ON CHARACTERISTICS
Zero-Gate Voltage Orain Current
(VOS = 15 Vdc, VGS = 0)
mA
lOSS
BF245(1),
BF245A.
BF245B,
BF245C,
BF244(2)
BF244A
BF244B
BF244C
2
2
6
12
25
6.5
15
25
3.0
6.5
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f
Output Admittance
(VOS = 15 Vdc, VGS
= 200
MHz)
Reverse Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f
= 200
MHz)
Output Capacitance
(VOS = 20 Vdc, -VGS
40
IYfs I
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f
= 0,
Cut-off Frequency(3)
(VOS = 15 Vdc, VGS
= 0)
mmhos
IYrs !
1.0
pF
C ,SS
3
pF
Crss
= 1 MHz)
0.7
pF
Coss
= 1 Vdc, f = 1 MHz)
Noise Figure
(VOS = 15 Vdc, VGS
mmhos
5.6
= 1 Vdc)
Reverse Transfer Capacitance
(VOS = 20 Vdc, -VGS = 1 Vdc, f
f'mhos
IYosl
= 0, f = 1 KHz)
Input Capacitance
(VOS = 20 Vdc, -VGS
mmhos
!Yfs!
= 1 KHz)
0.9
db
NF
RG
= 1 KQ, f = 100 MHz)
1.5
MHz
F(Yfs)
700
(1) On orders against the BF245, any or all subgroups might be shipped.
(2) On orders against the BF244, any or all subgroups might be shipped.
(3) The frequency at which gfs is 0.7 of its value at 1 KHz.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-77
•
BF246, A, B, C G" .. u=t\,m
~
CASE 29-04, STYLE 22
TO-92 (TO-226AA)
1 Source
BF247, A, B, C J.~'m
G..
~
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
,,1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
+25
Vdc
Drain-Gate Voltage
VOG
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
10
100
mAdc
IGlfl
10
mAdc
Po
360
2.88
-65 to +150
mW
mW/oC
Drain Current
Forward Gate Current
Total Device Dissipation @ TA ~ 25°C
Derate above 25°C
Storage Channel Temperature Range
Tstg
2 Soul'Ce
3
JFETs
SWITCHING
N-CHANNEL - DEPLETION
°C
Refer to MPF4391 for graphs.
ELECTRICAL CHARACTERISTICS ITA
I
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
25
-
-
-0.5
-1.5
-3
-5.5
-
-14
-
-
-4
-7
-12
0.6
-
14.5
-
-
5
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG ~ 1 flA, VOS ~ 0)
Gate-Source
(VOS ~ 15 V, 10
V(BR)GSS
VGS
~
200 flA)
BF246,
BF246A,
BF246B,
BF246C,
BF247
BF247A
BF247B
BF247C
Gate-Source Cutoff Voltage
(VOS ~ 15 V, 10 ~ 10 nA)
Gate Cutoff Current
(VGS ~ 15 V, VOS
~
VGS(oll)
IGSS
0)
V
V
V
nA
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current
(VOS ~ 15 V, VGS ~ 0)
mA
lOSS
BF246,
BF246A,
BF246B,
BF246C,
BF247
BF247A
BF247B
BF247C
30
30
60
110
250
80
140
250
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance
(VOS ~ 15 V, 10 ~ 10 mA, I
1 kHz)
8
Input Capacitance
(VOS ~ 15 V, 10 ~ 10 mA, I
~
1 MHz)
Output Capacitance
(VOS ~ 15 V, 10 ~ 10 mA, f
~
1 MHz)
23
pF
Crss
Reverse Transfer Capacitance
(VOS ~ 15 V, 10 ~ 10 mA, I ~ 1 kHz)
Cutoll Frequency
(VOS ~ 15 V, VGS
mmhos
IYlsl
~
3.3
pF
Cin
6
pF
Cout
5
MHz
F(Yls)
~
450
0)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-78
BF256, B, C
CASE 29-04. STYLE 23
TO-92 (TO-226AA)
,,',~~~
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
+30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
3
2 Source
ID
100
mAdc
JFET
IGlfl
10
mAdc
VHF/UHF AMPLIFIERS
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
mW
mW/oC
N-CHANNEL- DEPLETION
Storage Channel Temperature Range
Tstg
360
2.88
-65to+150
Drain Current
Forward Gate Current
°C
Refer to 2N4416 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Typ
Max
Unit
Symbol
Min
V(BR)GSS
30
-
-
Vdc
VGS(off)
-0.5
-
-7.5
Vdc
-
-
5
nAdc
3
6
11
-
18
13
18
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 1.0 ~Adc, VDS = 0)
Gate-Source Voltage
(VDS = 15 Vdc, ID = 200
~A)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
IGSS
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current)
(VDS = 15 Vdc, VGS = 0)
IDSS
BF256(1)
BF256B
BF256C
-
mAdc
SMALL-SIGNAL CHARACTERISTICS
5
-
mmhos
-
0.7
-
pF
Coss
-
1.0
-
pF
NF
-
7.5
-
db
fgfs
-
1000
-
MHz
Gp
-
11
-
dB
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1 kHz)
IYfsi
4.5
Reverse Transfer Capacitance
(VDS = 20 Vdc, -VGS = lVdc, f = 1 MHz)
Crss
Outr;ut Capacitance
(VDS = 20 Vdc, VGS = 0, f = 1 MHz)
Noise Figure
(VDS = 10 Vdc, Rs = 470, f = 800 MHz)
Cut-off Frequency(2)
(VDS = 15 Vdc, VGS = 0)
Power Gain
(VDS = 15 Vdc, Rs = 47 0, f =800 MHz)
(1) On orders against the BF256, any or aI/ subgroups might be shipped.
(2)The frequency at which gfs IS 0.7 of its value at 1 kHz.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-79
•
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
Rating
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
BFR30L
BFR31L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
R8JA
556
°CfW
Po
300
mW
2.4
mWI"C
R8JA
417
°CfW
-55 to +150
°C
Total Oevice ~issipation FR-5 Board,'
TA = 25°C
Oerate above 25°C
Thermal Resistance Junction to Ambient
Total Oevice Oissipation
Alumina Substrate," TA = 25°C
Oerate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
TJ, TstQ
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2 Source
,~' ,~~
1 Drain
JFET
AMPLIFIERS
N-CHANNEL
DEVICE MARKING
I BFR30L
=
Ml; BFR31L
=
M2
ELECTRICAL CHARACTERISTICS (TA
•
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
IGSS
-
0.2
nAdc
-
5.0
2.5
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 10 Vdc, VOS = 0)
Gate Source Cutoff Voltage
(10 = 0.5 nAdc, VOS = 10 Vdc)
VGS(off)
BFR30L
BFR31L
Gate Source Voltage
(10 = 1.0 mAde, VOS = 10 Vdc)
Vdc
Vdc
VGS
-0.7
BFR30L
BFR31L
BFR30L
BFR31L
(10 = 50 pAdc, VOS = 10 Vdc)
-
-3.0
-1.3
-
-4.0
-2.0
ON CHARACTERISTICS
Zero-Gate-Voltage Orain
(VOS = 10 Vdc, VGS = 0)
BFR30L
BFR31L
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(10 = 1.0 mAde, VOS = 10 Vdc, I = 1.0 kHz)
mAde
IVlsl
(10 = 200 pAdc, VOS = 10 Vdc, I = 1.0 kHz)
Output Admittance
(10 = 1.0 mAde, VOS = 10 Vdc, I = 1.0 kHz)
(10 = 200 pAdc, VOS = 10 Vdc)
BFR30L
BFR31L
1.0
1.5
4.0
4.5
BFR30L
BFR31L
0.5
0.75
-
40
20
25
15
-
-
5.0
4.0
-
1.5
1.5
pAdc
IVosl
BFR31L
BFR31L
Input Capacitance
(10 = 1.0 mAde, VOS = 10 Vdc, 1= 1.0 MHz)
(10 = 200 pAdc, VOS = 10 Vdc, 1= 1.0 MHz)
Ciss
Reverse Transler Capacitance
(10 = 1.0 mAde, VOS = 10 Vdc, 1= 1.0 MHz)
(10 = 200 pAdc, VOS = 10 Vdc, I = 1.0 MHz)
Crss
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-80
pF
BSI07,A
CASE 29-04, STYLE 30
TO-92 (T0-226AAI
MAXIMUM RATINGS
1 Drain
Symbol
Rating
Value
Unit
Orain-Source Voltage
VOS
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current
Continuous(1 )
Pulsed(2)
10
10M
250
500
mAdc
Po
0.6
Watts
TJ, Tstg
-55to 150
°c
Total Oevice Oissipation @ TC = 25°C
Oerate above 25°C
Operating and Storage Junction
Temperature Range
~
3 Source
TMOS
SWITCHING
(1) The Power Oissipation 01 the package may result in a lower continuous drain
current.
N-CHANNEL - ENHANCEMENT
(2) Pulse Width", 300 JJ.S, Outy Cycle'" 2.0%.
Refer to MFE9200 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero-Gate-Voltage Orain Current
(VOS = 130 V, VGS = 0)
lOSS
-
-
30
nAdc
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 100 pA)
V(BR)OSX
200
-
-
Vdc
0.Q1
10
nAdc
-
3.0
Vdc
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VOS = 0)
IGSS
-
ON CHARACTERISTICS'
Gate Threshold Voltage
(10 = 1.0 mA, VOS = VGS)
VGS(Th)
Static Orain-Source On Resistance
BS107
(VGS '" 2.6 V, 10 = 20 mAl
(VGS = 10 V, 10 = 200 mAl
BS107A
(VGS = 10 Vdc)
(10 = 100 mAl
(10 = 250 mAl
rOS(on)
1.0
Ohms
-
-
28
14
4.5
4.8
6.0
6.4
SMALL-8IGNAL CHARACTERISTICS
Input Capacitance
(VOS = 25 V, VGS = 0,1 = 1.0 MHz)
Ciss
-
60
-
pF
Reverse Transfer Capacitance
(VOS = 25 V, VGS = 0,1 = 1.0 MHz)
Crss
-
6.0
-
pF
Output Capacitance
(VOS = 25 V, VGS = 0,1= 1.0 MHz)
Coss
-
30
-
pF
400
-
mmhos
Forward Transconductance
(VOS = 25 V, 10 = 250 mAl
9fs
200
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
'Pulse Test: Pulse Width", 300 JJ.S, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-81
•
85170
CASE 29·04, STYLE 30
TO·92 (TO·226AA)
1 Drain
~~
MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage
VOS
60
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current(1)
10
0.5
Adc
Total Device Dissipation (0; TC = 25'C
Po
0.83
Watt
TJ, Tstg
-55 to +150
'c
Operating and Storage Junction
Temperature Range
Unit
3 Source
TMOS FET
SWITCHING
N-CHANNEL -
ENHANCEMENT
(1) The Power Dissipation of the package may result in a lower continuous drain
current.
ELECTRICAL CHARACTERISTICS
(TA
= 25'C unless otherwise
noted.)
Symbol
Min
Typ
Max
Unit
IGSS
-
0,01
10
nAdc
V(BR)OSS
60
90
-
Vdc
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 mAl
VGS(Th)
0.8
2.0
3.0
Vdc
Static Drain-Source On Resistance
(VGS = 10 V, 10 = 200 mAl
rOS(on)
-
1.8
5.0
Ohms
10(off)
-
-
0.5
p.A
9ls
-
200
-
mmhos
Turn-On Time
(10 = 0.2 A) See Figure 1
ton
-
4.0
10
ns
Turn-Off Time
(10 = 0.2 A) See Figure 1
toff
-
4.0
10
ns
Characteristic
•
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 V, VOS = 0)
Drain-Source Breakdown Voltage
(VGS = 0,10 = 100 pA)
ON CHARACTERISTICS(2)
Drain Cutoff Current
(VOS = 25 V, VGS = 0 V)
Forward Transconductance
(VOS = 10 V, 10 = 250 mAl
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS = 10 V, VGS = 0, 1= 1.0 MHz)
SWITCHING CHARACTERISTICS
(2) Pulse Test: Pulse Width", 300 p.o, Duty Cycle", 2.0%.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
4-82
88170
RESISTIVE SWITCHING
FIGURE 1 -
FIGURE 2 -
SWITCHING TEST CIRCUIT
+
SWITCHING WAVEFORMS
25 V
125
n
20 dB
Pulse Generator
r----'
I
1
50 n I
50
IL I1. ____ J1
50
n Attenuator
n
Output I Vout
Inverted
(Vin Amplitude 10 Voltsl
Input
FIGURE 3 -
VGS(th) NORMALIZED versus TEMPERATURE
FIGURE 4 -
2.0
Vin
ON-REGION CHARACTERISTICS
20
1
VGS
w 16
<.:>
-
~
0
>
'3
~
~
12
O.B
VDS
VGS
10 mA
ID
t---
'5
in
!i'
--
g-> 16
f--
-,!
>-
I---
ii3
12
~
OB
z
r-- I--
j
04
FIGURE 5 -
OUTPUT CHARACTERISTICS
VGS
16 f------
~
1.2
'">--,!
::>
u
z
~ OB
'"
g
..9 04
IJ
/'
,.-
-
~
150 I CI
100
20
:2
0
~
o
50
TJ. JUNCTION TEMPERATURE
/'
'"
04
50
./
'"
lOV
I
60 V
'L
50 V
-
6.0 V
50V
4.0 V
4.0
CAPACITANCE versus DRAIN-TO-SOURCE VOLTAGE
VGS
___ J~_Y
V
...--
7.0 V
100
10 V
BOV
~~
~
ov
80
u
z
60
;<:
U
;;t
3
40
1\
\
1\
~
-.......
20
40V
I\,
c"s-
r-....
j
Coss
.........
10
20
30
10V
10
20
30
Vas. DRAIN·TO-SOURCe VOLTAGE (VOLTS)
FIGURE 6 -
H
Vi
-
~ ';...-
....- V
::;.--
Jis.
~
40
10
VDS. DRAIN-TO-SOURCE VOLTAGE IVOLTS,
Crss
20
30
40
50
YDS. DRAIN- TO-SOURCE VOLTAGE (VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-83
60
•
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
±VOS
40
V
V
Rating
Orain-Gate Voltage
VOG
40
Gate-Source Voltage
VGS
40
V
Forward Gate Current
IG(f)
50
mA
Symbol
Max
Unit
Po
225
mW
I.B
mWI"C
ROJA
556
'CIW
Po
300
mW
2.4
mW/'C
ROJA
417
'CIW
TJ, Tst~
-55 to +150
"C
BSR56L
thru
BSR58L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Oevice Oissipation FR-5 Board,"
TA = 25"C
Oerate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25'C
Oerate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Source
,~' ,~-@
, Drain
JFET
SWITCHING
TRANSISTORS
"FR-5 = 1.0 x 0.75 x 0.062 In.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
I BSR56L = M4; BSR57L = M5; BSR5BL = M6
ELECTRICAL CHARACTERISTICS (TA
•
=
25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
40
-
Vdc
-
1.0
nA
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !LAde, VOS = 0)
Gate-Reverse Current
(VOS = a V, VGS = 20 V)
IGSS
Gate-Source Cutoff Voltage
(VOS = 15 V, 10 = 0.5 nA)
V
VGS(off)
-4.0
-2.0
-O.B
BSR56L
BSR57L
BSR5BL
-10
-6.0
-4.0
ON CHARACTERISTICS
Zero-Gate Voltage Orain
(VOS = 15 V, VGS = 0)
rnA
loSS
BSR56L
BSR57L
BSR58L
Orain-Source On Voltage
(10 = 20 rnA, VGS = 0)
(10 = 10 rnA, VGS = 0)
(10 = 5.0 rnA, VGS = 0)
VOS(on)
BSR56L
BSR57L
BSR5BL
Static Orain-Source On Resistance
(10 = a mAde, VGS = 0, f = 1.0 kHz)
rOS(on)
BSR56L
BSR57L
BSR5BL
-
50
20
B.O
100
BO
-
0.75
0.5
0.4
-
-
25
40
60
-
6.0
6.0
10
-
3.0
4.0
10
-
25
50
100
Vdc
Ohms
SWITCHING CHARACTERISTICS
Oelay Time:
(VGSM =
(VGSM =
(VGSM =
VOO = 10 V; VGS =
10 V, 10 = 20 rnA)
6.0 V, 10 = 10 rnA)
4.0 V, 10 = 5.0 rnA)
Rise Time: VOO = 10 V; VGS =
(VGSM = 10 V, 10 = 20 mAl
(VGSM = 6.0 V, 10 = 10 mAl
(VGSM = 4.0 V, 10 = 5.0 rnA)
a
a
Turn-Off Time: VOO = 10 V; VGS
(VGSM = 10 V, 10 = 20 rnA
(VGSM = 6.0 V, 10 = 10 rnA)
(VGSM = 4.0 V, 10 = 5.0 rnA)
ns
td
BSR56L
BSR57L
BSR5BL
tr
BSR56L
BSR57L
BSR5BL
=a
toff
BSR56L
BSR57L
BSR58L
ns
-
ns
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-84
BSR56L thru BSR58L
SWITCHING TIMES WAVEFORMS
VOO
R
BSR56; R = 464 0
BSR57; R = 953 0
BSR58; R = 1910 0
Pulse Generator
tr = tf '" 1,0 ns
8
Vi 0--_--',..'---1
Zo
= 0.02
= 500
Oscilloscope
tr '" 0.75 n.
Ri'" 1 MO
Ci '" 2,5 pF
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
4·85
'.
BSS89
CASE 29-04, STYLE 7
TO-92 (TO-226AA)
2 Drain
~
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOSS
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current -
10
10M
400
800
mAdc
Po
0.6
4.8
Watts
mWf'C
TJ, Tstg
-55 to 150
°C
°JA
208
°CfW
Continuous (1)
Pulsed (2)
Total Power Dissipation @ TA
Derate above 25°C
~
25°C
Operating and Storage
Temperature Range
TMOS FET
TRANSISTOR
N-CHANNEL -
Thermal Resistance Junction to Ambient
ELECTRICAL CHARACTERISTICS
ENHANCEMENT
(TA ~ 25°C unless otherwise noted.)
I
Characteristic
•
1 Source
Symbol
Min
V(BR)OSS
Typ
Max
Unit
OFF CHARACTERISTICS
200
-
-
Zero Gate Voltage Drain Current
(VOS ~ 200 V, VGS ~ 0)
lOSS
-
0.1
60
p.Adc
Gate-Body Leakage Current
(VGS ~ 20 V, VOS ~ 0)
IGSS
-
0.Q1
100
nAdc
-
2.7
Vdc
Drain-Source Breakdown Voltage (VGS ~ 0, 10 ~ 0.5 rnA)
Vdc
ON CHARACTERISTICS·
=
Gate Threshold Voltage (10 ~ 1.0 rnA. VOS
Drain-Source On-Voltage (VGS
(10 = 100 rnA)
(10 = 300 rnA)
(10 = 500 rnA)
=
VGS)
VGS(th)
10 V)
VOS(on)
On-State Drain Current
(VOS = 25 V, VGS = 10 V)
Forward Transconductance (VOS
=
= 25 V,
10 Vdc)
10
= 300
0.45
1.2
3.0
500
700
-
4.5
9fs
140
400
-
mmhos
Ciss
-
72
-
pF
Coss
-
15
-
pF
Crss
-
2.8
-
pF
rOS(on)
rnA)
Vdc
-
10(on)
Static Drain-Source On-Resistance (VGS
(10 = 150 rnA)
(10 = 300 rnA)
(10 = 500 rnA)
1.0
0.6
1.8
-
rnA
Ohms
6.0
6.0
6.0
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS = 25 V, VGS
=
Output Capacitance
(VOS = 25 V, VGS
= 0, f =
0, f
= '1.0 MHz)
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 25 V, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS·
Turn-On Time (See Figure 1)
Turn-Off Time (See Figure 1)
(1) The Power Dissipation of the package may result in a lower continuous drain current.
(2) Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-86
BSS89
RESISTIVE SWITCHING
FIGURE 1 -
SWITCHING TEST CIRCUIT
FIGURE 2 -
SWITCHING WAVEFORMS
·25 V
To Sampling Scope
n Input
r-20~II-_-a~=-=-~50VOUf
Output V out
Inverted
Input Vm
FIGURE 3 -
ON VOLTAGE versus TEMPERATURE
FIGURE 4 -
10
;;;
180
:;
0
~
5.0
--
I
~
~
VGS - 10 V
20
>
a>
=>
5l
-I-- I-"
10
z
;;: 0.5
a:
0
~ 0.2
>
0.1
-55
-35
VGS
160
250 mA
I
0
~
I---
~ 140
~
<)
f----
100 mA
12
r
o
u 60
o \
o \ i"-
-15
15
~5.0
45
FIGURE 5 -
65
105
85
125
\.
0
:45
10
FIGURE 6 -
10/
~ 06
Vas: 10V
,;; 0.5
,;;
..... 0.5
z
=> 0.4
/
u
0.3
~,90.2
0
1.0
3.0
em
50
40
OUTPUT CHARACTERISTIC
/'
5.0 V
4.0 v-
I
c
~O 2
/
o
'/
.9 1 V
o.
3.0 V
,.....
./
1.0
co..
1/
II
~ 0.3
/
O. 1
I.
~a: 0.4
a
/
:i!
a:
r---
/
/
::;;
0.6
30
Ci..
ORAIN - SOURCE VOLTAGE IVOLTSJ
07
/
07
20
Vos.
TRANSFER CHARACTERISTIC
0.8
Z
= 0V
I
0,
~ 100
1
~
z
TJ. JUNCTION TEMPERATURE I'C}
~
CAPACITANCE VARIATION
200
4.0
5.0
6.0
7.0
8.0
90
10
2.0
40
VGS. GATE·SOURCE VOLTAGE IVOLTSI
6.0
8.0
10
FIGURE 7 -
SATURATION CHARACTERISTIC
0.7
ie
0.6
~
O. 5
!z
.......- ,.....
~ 0.4
a
.......-:: ;...---
c
9
-
...-:::r---
~ o. 3
~
Q
./
O. 2
./
,......-
Y
O. 1
r
'"
12
14
VOS. DRAIN·SOURCE VOLTAGE (VOLTSJ
--...-
~
5.0 V
40 V
3.0 V
10
10
30
40
VDS. DRAIN·SOURCE VOLTAGE ,VOLTS)
5.0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-87
16
18
20
•
MAXIMUM RATINGS
Symbol
Value
Drain-Source Voltage
Rating
VDSS
100
Unit
Vdc
Gate-Source Voltage
VGS
±35
Vdc
Drain Current
Continuous (1)
Pulsed (2)
ID
IDM
0.17
0.68
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
R8JA
556
°CIW
PD
300
mW
2.4
mWrC
R8JA
417
°CIW
TJ, Tstg
-55 to +150
°C
BSS123L
CASE 318-03, STYLE 21
SOT-23 (TO-236AB)
Adc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
=
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
TMOS FET
TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
BSS123L = 5A
ELECTRICAL CHARACTERISTICS (TA
•
=
25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
-
-
-
-
15
60
-
50
nAdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 250 ,..A)
Zero Gate Voltage Drain Current
(VGS = 0, VOS = 100 V) TJ = 25°C
TJ = 125°C
lOSS
Gate-Body Leakage Current
(VGS = 20 Vdc, VOS = 0)
IGSS
Vdc
I'Adc
ON CHARACTERISTICS'
Gate Threshold Voltage
(VDS = VGS, 10 = 1.0 mAl
VGS(th)
0.8
-
2.8
Vdc
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 100 mAl
rOS(on)
-
5.0
6.0
Ohms
9fs
80
-
-
mmhos
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss
-
20
-
pF
Output Capacitance
(VOS = 25 V, VGS
Coss
-
9.0
-
pF
Crss
-
4.0
-
pF
FOrWaid Transconductance
(VOS = 25 V, 10 = 100 mAl
DYNAMIC CHARACTERISTICS
= 0, f =
1.0 MHz) ,
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz) .
SWITCHING CHARACTERISTICS'
r-T_u_rn_-O_n_o_e_la""y_T_i_m_e_-I (VCC = 30 V, IC = 0.28 A,
Turn-Off Delay Time
VGS = 10 V, RGS = 500)
REVERSE DIODE
Diode Forward On-Voltage
(10 = 0.34 A, VGS = 0 V)
(1) The Power Dissipation of the package may result in a lower continuous drain current.
(2) Pulse Width", 300 I's, Duty Cycle", 2.0%.
'Pulse Test: Pulse Width", 300 I'S, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-88
IRFD1ZO
IRFD1Z3
FET DIP
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS
=
20 k!ll
Symbol
IRFD1Z0
IRFD1Z3
Unit
VDSS
100
60
Vdc
VDGR
100
60
Vdc
Gate-Source Voltage
Drain Current
Continuous T C
Pulsed
Vdc
±20
VGS
Adc
= 25"C
0.5
4.0
ID
IDM
Total Power Dissipation
@TC = 25"C
Derate above 25"C
PD
Operating and Storage
Temperature Range
TJ, Tstg
0.4
3.2
1.0
B.O
-55 to
CASE 370-01. STYLE 1
, Drain
~,~
~1\"-.r:~t Gat~
3 Source
Watts
mWrC
+ 150
TMOS FET
TRANSISTORS
"C
THERMAL CHARACTERISTICS
N-CHANNEL -
Thermal Resistance Junction to
Ambient (Free Air Operation)
ELECTRICAL CHARACTERISTICS (TC
ENHANCEMENT
"CIW
120
= 25"C unless otherwise noted.)
I
Characteristic
Unit
Symbol
Min
Typ
V(BR)DSS
100
60
-
-
-
250
I'Adc
-
500
nAdc
-
500
nAdc
-
4.0
Vdc
Ohms
Max
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, ID = 250 pAl
Zero Gate Voltage Drain Current
IRFD1Z0
IRFD1Z3
(VDSS
=
Rated VDSS, VGS
Gate-Body Leakage Current, Forward
(VGSF
Gate-Body Leakage Current, Reverse
(VGSR
= 0 V)
= 20 V)
= 20 V)
IDSS
IGSSF
IGSSR
-
-
Vdc
-
ON CHARACTERISTICS
Gate Threshold Voltage
(lD = 250 pA, VDS = VGS)
VGS(th)
Static Drain-Source On-Resistance(1)
(VGS = 10 Vdc, ID = 0.25 A)
IRFD1Z0
IRFD1Z3
On-State Drain Current(1)
(VGS = 10 V, VDS = 5.0 V)
rDS(on)
2.0
-
-
-
-
3.4
3.2
0.5
0.4
-
0.25
-
-
Adc
ID(on)
IRFD1Z0
IRFD1Z3
Forward Transconductance( 1)
(lD = 0.25 A, VDS = 5.0 V)
gts
mhos
CAPACITANCE
Input Capacitance
(VDS
Output Capacitance
=
t =
25 V, VGS
1.0 MHz)
=0
Reverse Transfer Capacitance
Ciss
-
Coss
-
Crss
-
70
pF
30
10
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
(VDS = 0.5 V(BR)DSS,
ID = 0.25 A, Zo = 50 0)
Turn-Off Delay Time
Fall Time
td(on)
-
-
tr
-
td(off)
-
-
tf
20
ns
25
25
-
20
-
1.4
1.3
Vdc
0.5
0.4
Adc
4.0
3.2
A
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS
= 0)(1)
IS
IS
= 0.5 A,
= 0.4 A,
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
I
Reverse Recovery Time
I
(IS
=
IRFD1 ZO
IRFD1Z3
VF
IRFD1Z0
IRFD1Z3
IS
IRFD1Z0
IRFD1Z3
ISM
Rated IS, VGS
= 0)
-
-
-
-
-
-
100
(1) Pulse Test: Pulse Width", 300 I's, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-89
ns
negligible
ton
trr
-
-
•
IRFDll0
IRFDl13
FET DIP
CASE 370-01, STYLE 1
MAXIMUM RATINGS
Symbol
IRFD110
IRFD113
Unit
Drain-Source Voltage
VOSS
100
60
Vdc
Orain-Gate Voltage (RGS = 20 kO)
VOGR
100
60
Vdc
Rating
Gate-Source Voltage
±20
VGS
Vdc
Adc
Orain Current
Continuous TC = 25°C
Pulsed
1.0
8.0
10
10M
0.8
6.4
Watts
Total Power Oissipation
@TC = 25°C
Derate above 25°C
Po
Operating and Storage
Temperature Range
TJ, Tstg
1.0
8.0
mWrC
-55 to + 150
°c
1 Drain
~"!~
3 Source
TMOS FET
TRANSISTORS
THERMAL CHARACTERISTICS
120
Thermal Resistance
Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC
=
N-CHANNEL -
25°C unless otherwise noted.)
I
Characteristic
•
ENHANCEMENT
Symbol
Min
Typ
V(BR)OSS
100
60
-
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 250 pA)
IRF0110
IRF0113
-
lOSS
-
Gate-Body Leakage Current, Forward
(VGSF = 20V)
IGSSF
-
-
Gate-Body Leakage Current, Reverse
(VGSR = -20 V)
IGSSR
-
Zero Gate Voltage Orain Current
(VOSS = Rated VOSS, VGS = 0 V)
-
Vdc
250
pAdc
500
nAdc
-
-500
nAdc
2.0
-
4.0
Vdc
-
-
0.6
0.8
Ohms
1.0
0.8
-
9ls
0.8
-
-
ON CHARACTERISTICS
Gate Threshold Voltage
(10 = 250 pA, VOS = VGS)
VGS(th)
Static Orain-Source On-Resistance(l)
(VGS = 10 Vdc, ID = 0.8 A)
IRFOll0
IRFD113
On-State Orain Current(l)
(VGS = 10 V, VDS = 5.0 V)
rOS(on)
-
ID(on)
IRFDll0
IRFD113
Forward Transconductance( 1)
(10 = 0.8 A. VDS = 5.0 V)
-
Adc
mhos
CAPACITANCE
Input Capacitance
(VOS = 25 V, VGS = 0
1= 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
-
200
Coss
-
-
100
Crss
-
-
25
td(on)
-
20
-
25
-
25
tl
-
-
20
VF
-
-
2.5
2.0
Vdc
-
1.0
0.8
Adc
-
8.0
6.4
A
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
tr
(VDS = 0.5 V(BR)DSS,
ID = 0.8 A, Zo = 50!l)
Turn-Off Delay Time
td(oft)
Fall Time
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS = 0)
IS = 1.0 A, IRFD110
IS = 0.8 A, IRFD113
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
IRFD110
IRFD113
IS
IRFD110
IRFD113
ISM
(IS = Rated IS, VGS = 0)
ton
trr
-
negligible
-
100
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-90
ns
-
IRFD120
IRFD123
MAXIMUM RATINGS
Rating
Symbol
IRFD120
IRFD123
Orain-Source Voltage
VOSS
100
60
Vdc
Orain-Gate Voltage
(RGS = 20 kil)
VOGR
100
60
Vdc
Gate-Source Voltage
Drain Current
Continuous TC
Pulsed
±20
VGS
Vdc
Adc
= 25°C
Total Power Oissipation
@TC = 25°C
Oerate above 25°C
1.1
4.4
1.3
5.2
10
10M
Po
Operating and Storage Temperature Range
TJ, Tst!!
FET DIP
CASE 370-01, STYLE 1
Unit
1.0
8.0
Watts
mWI"C
-55to +150
°c
, Drain
-,,~~
3 Source
TMOS FET
TRANSISTORS
THERMAL CHARACTERISTICS
I Thermal Resistance Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC
I
ROJA
I
N-CHANNEL -
120
ENHANCEMENT
25°C unless otherwise noted.)
=
I
Characteristic
Symbol
Min
Typ
100
60
-
-
-
-
250
pAdc
-
500
nAdc
-
-500
nAdc
2.0
-
4.0
Vdc
-
-
0.3
0.4
1.3
1.1
-
400
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 250 pA)
Zero Gate Voltage Orain Current
Vdc
V(BR)OSS
IRF0120
IRF0123
(VOSS
=
Rated VOSS, VGS
Gate-Body Leakage Current, Forward
(VGSF
Gate-Body Leakage Current, Reverse
(VGSR
= a V)
= 20 V)
= -20 V)
lOSS
IGSSF
IGSSR
-
ON CHARACTERISTICS
Gate Threshold Voltage
(10 = 250 pA, VOS = VGS)
VGS(th)
Static Orain-Source On-Resistance(1)
(VGS = 10 Vdc, 10 = 0.6 A)
Ohms
rOS(on)
IRF0120
IRF0123
On-State Orain Current(1)
(VGS = 10 V, VOS = 5.0 V)
Adc
10(on)
9fs
0.9
-
Ciss
Crss
-
-
td(on)
-
tr
-
-
IRF0120
IRF0123
Forward Transconductance(1)
(10 = 0.6 A. VOS = S.O V)
mhos
CAPACITANCE
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS = a
f = 1.0 MHz)
Reverse Transfer Capacitance
Coss
600
pF
100
SWITCHING CHARACTERISTICS
Turn-On Oelay Time
Rise Time
(VOS = 0.5 V(BR)OSS,
10 = 0.6 A, Zo = SO il)
Turn-Off Oelay Time
Fall Time
td(off)
tf
40
ns
70
100
70
SOURCE-DRAIN DIODE CHARACTERISTICS
Oiode Forward Voltage
(VGS
= 0)
IS
IS
=
=
1.3 A, IRF0120
1.1 A, IRF0123
Continuous Source Current, Body Oiode
Pulsed Source Current, Body Oiode
Forward Turn-On Time
Reverse Recovery Time
I
I
(IS
VSO
IRF0120
IRF0123
IS
IRF0120
IRF0123
ISM
= Rated
IS, VGS
= 0)
-
2.5
2.3
Vdc
1.3
1.1
Adc
-
-
5.2
4.4
A
negligible
ton
trr
-
-
280
(1) Pulse Test: Pulse Width", 300 p.s, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-91
ns
-
•
IRFD210
IRFD213'
MAXIMUM RATINGS
Rating
Symbol
IRFD210
IRFD213
Unit
Drain-Source Voltage
VOSS
200
150
Vdc
Drain-Gate Voltage
(RGS ~ 20 k!l)
VDGR
200
150
Vdc
Gate-Source Voltage
Drain Current
Continuous TC
Pulsed
±20
VGS
Vdc
Adc
~
25°C
ID
IDM
Total Power Dissipation
@ TC ~ 25°C
Derate above 25°C
0.6
2.5
0.45
1.8
PD
Operating and Storage Temperature Range
TJ, Tsta
FET DIP
CASE 370-01. STYLE 1
1 Drain
~, ,~~
3 Source
1.0
0.008
Watts
mWrC
-55to +150
°c
TMOS FET
TRANSISTORS
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
N-CHANNEL -
120
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
200
150
-
-
-
250
!LAdc
-
500
nAdc
-500
nAdc
2.0
-
4.0
Vdc
-
-
1.5
2.4
1.5
2.4
-
150
Max
Unit
OFF CHARACTERISTICS
•
Drain-Source Breakdown Voltage
(VGS ~ 0, ID ~ 250/LA)
Zero Gate Voltage Drain Current
V(BR)DSS
IRFD210
IRFD213
(VDSS ~ Rated VDSS, VGS ~ 0 V)
IDSS
Gate-Body Leakage Current, Forward
(VGSF ~ 20 V)
IGSSF
Gate-Body Leakage Current, Reverse
(VGSR ~ -20 V)
IGSSR
-
Vdc
-
ON CHARACTERISTICS
Gate Threshold Voltage
(lD ~ 250 !LA, VDS ~ VGS)
VGS(th)
Static Drain-Source On-Resistance(l)
(VGS ~ 10 Vdc, ID ~ 0.3 A)
Ohms
rDS(on)
IRFD210
IRFD213
On-State Drain Current(l)
(VGS ~ 10 V, VDS ~ 5.0 V)
Adc
ID(on)
9fs
0.5
-
Ciss
-
-
-
-
-
-
IRFD210,IRFD211
IRFD212,IRFD213
Forward Transconductance(l)
(lD ~ 0.3 A, VDS ~ 5.0 V)
mhos
CAPACITANCE
Input Capacitance
(VDS ~ 25 V, VGS ~ 0
f ~ 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
pF
80
25
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
Rise Time
(VDS ~ 0.5 V(BR)DSS,
ID ~ 0.3 A. Zo ~ 50!l)
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
15
ns
25
15
15
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS ~ 0)
IS
IS
~
~
0.6 A, IRFD210
0.45 A, IRFD213
VSD
Continuous Source Current, Body Diode
IRFD210
IRFD213
IS
Pulsed Source Current, Body Diode
IRFD210
IRFD213
ISM
Forward Turn-On Time
Reverse Recovery Time
I
I
(Is ~ Rated IS, VGS ~ 0)
-
0.6
0.45
Adc
2.5
1.8
A
-
negligible
ton
trr
2.0
1.8
Vdc
-
-
290
(1) Pulse Test: Pulse Width", 300 /Ls, Duty Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-92
ns
-
IRFD220
IRFD223
FET DIP
CASE 370-01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
IRFD220
IRFD223
Unit
Drain-Source Voltage
VOSS
200
150
Vdc
Orain-Gate Voltage
(RGS = 20 k!1)
VOGR
200
150
Vdc
Gate-Source Voltage
±20
VGS
1 Drain
-" ,~~
Vdc
Drain Current
Adc
Continuous TC = 25°C
Pulsed
10
10M
Total Power Oissipation
@TC=25°C
Oerate above 25°C
0.8
2.4
0.7
5.6
3 Source
Po
Operating and Storage Temperature Range
TJ. Tsto
1.0
0.008
mWrC
-55to +150
°c
Watts
TMOS FET
TRANSISTORS
THERMAL CHARACTERISTICS
N-CHANNEL -
Thermal Resistance Junction to Ambient
ENHANCEMENT
120
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = O. ID = 250 /LA)
Zero Gate Voltage Drain Current
Vdc
V(BR)OSS
-
-
250
/LAde
500
nAdc
-500
nAdc
2.0
-
4.0
Vdc
-
-
0.8
1.2
0.8
0.7
-
-
9fs
0.5
-
-
mhos
600
pF
IRFD220
IRFD223
(VDSS = Rated VOSS. VGS =
200
150
a V)
IDSS
Gate-Body Leakage Current. Forward
(VGSF = 20 V)
IGSSF
Gate-Body Leakage Current. Reverse
(VGSR = -20 V)
IGSSR
-
ON CHARACTERISTICS
Gate Threshold Voltage
(10 = 250 /LA. VDS = VGS)
VGS(th)
Static Drain-Source On-Resistance(l)
(VGS = 10 Vdc. ID = 0.4 A)
rDS(on)
IRFD220
IRFD223
On-State Drain Current(l)
(VGS = 10 V. VDS = 5.0 V)
Ohms
Adc
10(on)
IRFD220
IRFD223
Forward Transconductance(l)
(lD = 0.4 A. VOS = 5.0 V)
-
CAPACITANCE
Input Capacitance
(V OS = 25 V. VGS =
f = 1.0 MHz)
Output Capacitance
a
Reverse Transfer Capacitance
Ciss
-
Coss
-
-
300
erss
-
-
80
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
(VOS = 0.5 V(BR)DSS.
ID = 0.4 A. Zo = 50!1)
Turn-Off Delay Time
Fall Time
td(on)
-
-
40
tr
-
-
60
td(off)
tf
ns
-
100
-
60
-
2.0
1.8
Vdc
0.8
0.7
Adc
6.4
5.6
A
SOURCE-DRAIN DIODE CHARACTERISTICS
Oiode Forward Voltage
(VGS = 0)
Continuous Source Current. Body Diode
Pulsed Source Current. Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
VSO
-
IRFD220
IRFD223
IS
-
IRFD220
IRFD223
ISM
-
(Is = Rated IS. VGS = 0)
ton
IS = 0.8 A. IRF0220
IS = 0.7 A. IRFD223
trr
-
negligible
-
150
(1) Pulse Test: Pulse Width", 300 /LS. Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-93
ns
-
•
IRFD9110
IRFD9112
FET DIP
CASE 370-01. STYLE 1
MAXIMUM RATINGS
Rating
Symbol
I
IRFD9110
IRFD9112
Unit
Drain-Source Voltage
VOSS
-100
Vdc
Drain-Gate Voltage (RGS = 20 kfi)
VOGR
-100
Vdc
VGS
±20
Gatll-Source Voltage
Vdc
Adc
Drain Current
Continuous TC = 25°C
Pulsed
10
10M
Total Power Dissipation
@TC=25°C
Derate above 25°C
Po
Operating and Storage
Temperature Range
TJ, Tstg
-0.7
-3.0
I
-0.6
-2.5
1 Drain
~, ,~-$
3 Source
1.0
8.0
mWrC
-55to +150
°c
Watts
TMOS FET
TRANSISTORS
THERMAL CHARACTERISTICS
P-CHANNEL -
ENHANCEMENT
120
Thermal Resistance Junction to
Ambient (Free Air Operation)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
I
Characteristic
•
Symbol
Min
V(BR)OSS
100
Typ
Max
Unit
-
Vdc
OFF CHARACTERISTICS
lOSS
-
-
250
p.Adc
Gate-Body Leakage Current, Forward
(VGSF = -20 V)
IGSSF
nAdc
(VGSR = 20 V)
IGSSR
-
500
Gate-Body Leakage Current, Reverse
-
500
nAdc
VGS(th)
2.0
-
4.0
Vdc
-
1.2
1.6
Ohms
Drain-Source Breakdown Voltage
(VGS = 0,10 = -250 p.A)
Zero Gate Voltage Drain Current (VOSS = Rated VOSS, VGS = 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage
(10 = -250 p.A, VOS = VGS)
Static Drain-Source On-Resistance(l)
(VGS = -10Vdc, 10 = -0.3A)
IRF09110
IRF09112
rOS(on)
On-State Drain Current(l)
(VGS = 10 V, VOS = -5.0 V)
IRF09110
IRF09112
10(on)
0.7
0.6
9fs
Ciss
Forward Transconductance(l)
(10 = -0.3 A, VOS = -5.0 VI
-
-
-
-
-
Adc
0.6
-
-
mhos
-
-
250
pF
-
100
-
35
-
30
CAPACITANCE
Input Capacitance
(VOS = -25 V, VGS = 0
f = 1.0 MHz)
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
-
60
td(ofl)
-
-
40
tf
-
-
40
VSO
-
-
-5.5
-5.3
Vdc
-0.7
-0.6
Adc
-.
-3.0
-2.5
A
td(on)
Rise Time
(VOS = 0.5 V(BR)OSS,
10 = -0.3 A, Zo = 50n)
Turn-Off Delay Time
Fall Time
tr
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
(VGS = 0)
IS = -0.7 A, IRF09110
IS = - 0.6 A, IRF09112
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
IRF09110
IRF09112
IS
IRF09110
IRF09112
ISM
(Is = Rated IS, VGS = 0)
-
-
negligible
ton
trr
-
-
120
(1) Pulse Test: Pulse Width", 300 p.s, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-94
ns
-
IRFD9120
IRFD9123
FET DIP
CASE 370-01, STYLE 1
MAXIMUM RATINGS
Symbol
Rating
IRFD9120
IRFD9123
Unit
Drain-Source Voltage
VOSS
100
60
Vdc
1 Drain
Drain-Gate Voltage (RGS ~ 20 kll)
VOGR
100
60
Vdc
~,~
~1~~~3 Ga~
Gate-Source Voltage
Vdc
±20
VGS
Adc
Drain Current
Continuous TC
Pulsed
~
25°C
0.8
6.4
1.0
8.0
10
10M
Total Power Dissipation
@ TC ~ 25°C
Derate above 25°C
Po
Operating and Storage
Temperature Range
TJ. Tstg
3 Source
1.0
8.0
Watts
mWFC
-55 to + 150
°c
120
°CIW
TMOS FET
TRANSISTORS
THERMAL CHARACTERISTICS
Thermal Resistance Junction to
Ambient (Free Air Operation)
P-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
V(BR)DSS
100
60
-
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS
~
O. 10
~
IRFDS120
IRFDS123
-250,..A)
Zero Gate Voltage Drain Current
(VOSS ~ Rated VOSS. VGS ~ 0 V)
-
Vdc
-
-
250
,..Adc
-
500
nAdc
-
500
nAdc
VGS(th)
2.0
-
4.0
Vdc
-
-
0.6
0.8
Ohms
-
-
Adc
mhos
lOSS
Gate-Body Leakage Current. Forward
(VGSF
~
-20 V)
IGSSF
Gate-Body Leakage Current. Reverse
(VGSR
~
20 V)
IGSSR
ON CHARACTERISTICS
Gate Threshold Voltage
(10 ~ -250,..A. VOS ~ VGS)
Static Drain-Source On-Resistance(1)
(VGS ~ -10Vdc.10 ~ -0.8A)
IRF09120
IRF09123
rOS(on)
On-State Drain Current(1)
(VGS ~ 10 V. VOS ~ -5.0 V)
IRF09120
IRF09123
10(on)
1.0
0.8
9ls
0.8
-
-
Ciss
-
Coss
-
-
350
-
100
Forward Transconductance(1)
(10 ~ -0.8 A. VOS ~ -5.0 V)
-
-
CAPACITANCE
Input Capacitance
(VOS
Output Capacitance
~
f
-25 V. VGS
1.0 MHz)
~
0
~
Reverse Transfer Capacitance
Crss
450
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(off)
-
tf
-
-
-
-
td(on)
Rise Time
(VOS = 0.5 V(BR)DSS.
10 ~ -0.8 A. Zo ~ 50 ll)
Turn-Off Delay Time
Fall Time
tr
50
ns
100
100
100
SOURCE-DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
~
~
-1.0 A. IRF09120
- 0.8 A. IRF09123
VF
Continuous Source Current. Body Diode
IRF09120
IRF09123
IS
Pulsed Source Current. Body Diode
IRFD9120
IRFD9123
ISM
Forward Turn-On Time
Reverse Recovery Time
(VGS
0)
I
I
IS
IS
~
(IS
~
Rated IS. VGS
~
0)
-
150
(1) Pulse Test: Pulse Width", 300 ,..s. Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-95
Vdc
1.0
0.8
Adc
8.0
6.4
A
negligible
ton
trr
6.3
6.0
ns
-
•
IRFEll0
IRFEl13
MAXIMUM RATINGS
Rating
Drain-Source Voltage
= 20 kG)
Drain-Gate Voltage (RGS
Gate-Source Voltage
Drain Current
Continuous T C
Pulsed
Symbol
IRFE110
IRFE113
Unit
VOSS
100
60
Vdc
VOGR
100
60
Vdc
Vdc
±20
VGS
Adc
= 25°C
1.0
8.0
10
10M
Total Power Dissipation
@TC = 25°C
Derate above 25°C
3.0
30
Watts
mWrC
1.0
8.0
Watt
mWrC
-55to +150
°c
Po
Package
Per
Device
Operating and Storage
Temperature Range
TJ, Tstg
0.8
6.4
•.
CASE 648-08, STYLE 2
12345678
QUAD
TMOS FET
TRANSISTORS
40 Total Package
125 Each FET
ELECTRICAL CHARACTERISTICS (TC
N-CHANNEL -
ENHANCEMENT
25°C unless otherwise noted.)
=
I
Characteristic
a
.....
'~
THERMAL CHARACTERISTICS
Thermal Resistance Junction to
Ambient (Free Air Operation)
" """
Symbol
Min
V(BR)DSS
100
60
Typ
Max
Unit
OFF CHARACTERISTICS EACH FET
IRFEll0
IRFE113
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 250 /LA)
Zero Gate Voltage Drain Current
(VOSS
=
Rated VOSS, VGS
Gate-Body Leakage Current, Forward
(VGSF
Gate-Body Leakage Current, Reverse
(VGSR
= 0 V)
= 20 V)
= -20 V)
lOSS
-
IGSSF
-
-
IGSSR
-
-
-
Vdc
250
/LAde
500
nAdc
500
nAdc
ON CHARACTERISTICS EACH FET
Gate Threshold Voltage
= 250 !LA, VOS = VGS)
9fs
0.8
-
Ciss
-
-
200
Coss
100
Crss
-
-
25
-
20
VGS(th)
2.0
Static Drain-Source On-Resistance(l)
(VGS = 10 Vdc, 10 = 0.8 A)
IRFE110
IRFE113
rOS(on)
-
On-State Drain Current(l)
(VGS = 10 V, VOS = 5.0 V)
IRFEll0
IRFE113
10(on)
(10
Forward Transconductance(l)
(10 = 0.8 A, VDS = 5.0 V)
1.0
0.8
4.0
Vdc
0.6
0.8
Ohms
-
Adc
-
-
mhos
CAPACITANCE EACH FET
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS = 0
f = 1.0 MHz)
Reverse Transfer Capacitance
pF
SWITCHING CHARACTERISTICS EACH FET
tr
-
td(off)
tf
1.0 A, IRFE110
0.8 A, IRFEl13
VF
IRFEll0
IRFEl13
IS
IRFEll0
IRFEl13
ISM
Turn-On Delay Time
td(on)
Rise Time
(VOS = 0.5, V(BR)OSS,
10 = 0.8 A, Zo = 50 G)
Turn-Off Delay Time
Fall Time
ns
25
-
-
-
-
20
-
-
2.5
2.0
Vdc
1.0
0.8
Adc
8.0
6.4
A
25
SOURCE-DRAIN DIODE CHARACTERISTICS EACH FET
Diode Forward Voltage
(VGS
= 0)
IS
IS
=
=
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
(IS
=
Rated IS, VGS
-
= 0)
-
-
negligible
ton
trr
-
-
100
(1) Pulse Test: Pulse Width", 300/Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-96
ns
-
IRFE9120
IRFE9123
MAXIMUM RATINGS
Symbol
IRFE9120
IRFE9123
Unit
Drain-Source Voltage
VOSS
100
60
Vdc
Drain-Gate Voltage IRGS ~ 20 kl1)
VOGR
100
60
Vdc
Rating
Gate-Source Voltage
Drain Current
Continuous T C
Pulsed
Vdc
±20
VGS
Adc
~
25°C
1.0
8.0
10
10M
Total Power Dissipation
@ TC ~ 25°C
3.0
30
Watts
mW/oC
1.0
8.0
Watt
mW/"C
-55to +150
°c
40 Total Package
125 Each FET
°CIW
Po
Package
Per
Derate above 25°C
Device
Operating and Storage
Temperature Range
0.8
6.4
TJ, Tstg
CASE 648-08, STYLE 2
-"
, RD.
" " " " " '"
12345678
QUAD
TMOS FET
TRANSISTORS
THERMAL CHARACTERISTICS
Thermal Resistance Junction to
Ambient IFree Air Operation)
ELECTRICAL CHARACTERISTICS ITC
P-CHANNEL -
ENHANCEMENT
~ 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
VIBR)OSS
100
60
Typ
Max
Unit
OFF CHARACTERISTICS EACH FET
Drain-Source Breakdown Voltage
IVGS ~ 0, 10 ~ - 250 JJA)
Zero Gate Voltage Drain Current
iRFE9120
IRFE9123
IVOSS ~ Rated VOSS, VGS ~ 0 V)
lOSS
-
Gate-Body Leakage Current, Forward
IVGSF ~ 20 V)
IGSSF
Gate-Body Leakage Current, Reverse
IVGSR ~ -20 V)
iGSSR
-
-
-
-
Vdc
250
/LAde
500
nAdc
500
nAdc
ON CHARACTERISTICS EACH FET
110 ~ -250/LA, VOS ~ VGS)
VGSlth)
2.0
Static Drain-Source On-Resistancell)
IVGS ~ -10 Vdc, 10 ~ -0.8 A)
Gate Threshold Voltage
IRFE9120
IRFE9123
rOSlon)
-
-
On-State Drain Currentll)
IVGS ~ -10 V, VOS ~ 5.0 V)
IRFE9120
IRFE9123
1010n)
1.0
0.8
9fs
0.8
Ciss
Coss
-
Crss
-
Forward Transconductance(1}
110 ~ -0.8 A, VOS ~ 5.0 V)
-
4.0
Vdc
0.6
0.8
Ohms
-
Adc
-
mhos
450
pF
CAPACITANCE EACH FET
Input Capacitance
IVOS ~ -25 V, VGS ~ 0
f ~ 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
-
350
100
SWITCHING CHARACTERISTICS EACH FET
Turn-On Delay Time
td(on)
Rise Time
(VOS ~ 0.5 V(BR)OSS,
10 ~ -0.8 A. Zo ~ 5011)
Turn-Off Delay Time
Fall Time
tr
-
td(off)
-
tf
-
-
50
ns
-
100
-
6.3
6.0
Vdc
1.0
0.8
Adc
8.0
6.4
A
100
100
SOURCE-DRAIN DIODE CHARACTERISTICS EACH FET
Diode Forward Voltage
(VGS ~ 0)
IS
IS
~
~
-1.0 A, IRFE9120
- 0.8 A, IRFE9123
VF
IRFE9120
IRFE9123
IS
IRFE9120
IRFE9123
ISM
Continuous Source Current, Body Diode
Pulsed Source Current, Body Diode
Forward Turn-On Time
Reverse Recovery Time
I
I
(IS
= Rated
-
-
IS, VGS ~ 0)
-
negligible
ton
trr
-
150
(1) Pulse Test: Pulse Width"" 300 /LS, Duty Cycle"" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-97
ns
-
•
IRFFll0
IRFFl13
MAXIMUM RATINGS
Symbol
IRFF110
IRFF113
Unit
Drain-Source Voltage
Rating
VOSS
100
60
Vdc
Drain-Gate Voltage (RGS = 1.0 m!l)
VOGR
100
Gate-Source Voltage
VGS
Drain Current
Continuous
Pulsed
10
10M
60
CASE 79-05, STYLE 6
TO-39 (TO-205AF)
Vdc
±20
Vdc
Adc
3.5
14
3.0
12
Po
15
0.12
Watts
W/"C
TJ, Tstg
-55to 150
°c
Thermal Resistance Junction to Case
R6JC
8.33
°CIW
Thermal Resistance Junction to Ambient
R6JA
175
°CIW
TL
300
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
ELECTRICAL CHARACTERISTICS
N-CHANNEL -
ENHANCEMENT
(TC = 25°C unless otherwise noted.)
Characteristic
•
TMOS FET
TRANSISTORS
Symbol
Min
Max
Unit
V(BR)OSS
100
60
-
Vdc
lOSS
-
250
IlAdc
100
nAdc
-100
nAdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 250 1lA)
IRFF110
IRFF113
Zero Gate Voltage Drain Current (VOS
=
= 0)
= 0)
-20 Vdc, VOS = 0)
Rated VOSS, VGS
Gate-Body Leakage Current, Forward (VGS
Gate-Body Leakage Current, Reverse (VGS
=
=
20 Vdc, VOS
IGSSF
IGSSR
-
-
ON CHARACTERISTICS'
= VGS, 10 = 250/LA)
VGS(th)
2.0
4.0
Vdc
Static Drain-Source On-Resistance
(VGS = 10 Vdc, 10 = 1.5 Adc)
IRFF110
IRFF113
rOS(on)
-
0.6
0.8
Ohm
On-State Drain Current
(VGS = 10 Vdc, VOS
IRFF110
IRFF113
10(on)
3.5
3.0
-
A
9fs
1.0
-
mhos
Gate Threshold Voltage (VOS
=
15 V)
Forward Transconductance (10
=
1.5 A, VOS
=
15 V)
-
DYNAMIC CHARACTERISTICS
Ciss
-
200
Coss
-
100
Crss
-
25
td(on)
-
20
tr
-
25
td(off)
-
25
tf
-
20
IRFF110
VSO
-
2.5
Vdc
IRFF113
VSO
2.0
Vdc
ton
-
Negligible
ns
trr
-
200 (Typ)
ns
Input Capacitance
(VOS
Output Capacitance
= 25 V, VGS =
f = 1.0 MHz)
0,
Reverse Transfer Capacitance
pF
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
(VOO = 0.5 Rated VOSS,
10 = 1.5A,
Rgen = 50 ohms)
Rise Time
Turn-Off Delay Time
Fall Time
ns
SOURCE-DRAIN DIODE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
(IS
Reverse Recovery Time
=
Rated 10(on)'
VGS = 0)
'Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-98
IRFF120
IRFF123
MAXIMUM RATINGS
Rating
Symbol
IRFF120
IRFF123
Unit
VOSS
100
60
Vdc
VOGR
100
60
Vdc
Drain-Source Voltage
Drain-Gate Voltage (RGS
~
1.0 mil)
Gate-Source Voltage
±20
VGS
Drain Current
Continuous
Pulsed
CASE 79-05, STYLE 6
TO-39 (TO-205AF)
lEi
Vdc
6.0
24
10
10M
Tolal Power Dissipation (a} TC
Derate above 25°C
~
25°C
5.0
20
Po
20
0.16
Watts
Wf'C
TJ, TSIs
-55 to 150
°c
Thermal Resistance Junction to Case
ReJC
6.25
°CIW
Thermal Resistance Junction to Ambient
ReJA
175
°CIW
TL
300
°C
Operating and Storage Temperature Range
3 Drain
,II{ G~
,~
Adc
21
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
1.6 mm from Case for 10 s
TMOS FET
TRANSISTORS
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
V(BR)OSS
100
60
-
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 25OI-'A)
IRFF120
IRFF123
Vdc
Zero Gate Voltage Drain Current (VOS ~ Rated VOSS, VGS ~ 0)
lOSS
I-'Adc
IGSSF
-
250
Gate-Body Leakage Current, Forward (VGS ~ 20 Vdc, VOS ~ 0)
100
nAdc
Gate-Body Leakage Current, Reverse (VGS ~ 20 Vdc, VOS ~ 0)
IGSSR
-
-100
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage (VOS ~ VGS, 10 ~ 250~)
VGS(th)
2.0
4.0
Vdc
Static Drain-Source On-Resistance
(VGS ~ 10 Vdc, 10 ~ 3.0 Adc)
IRFF120
IRFF123
rOS(on)
-
0.3
0.4
Ohm
On-State Drain Current
(VGS ~ 10 V, VOS ~ 15 V)
IRFF120
IRFF123
10(on)
6.0
5.0
9fs
1.5
-
Forward Transconductance (10
~
3.0 A, VOS
~
15 V)
•
A
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS ~ 25 V, VGS ~ 0,
f ~ 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
600
Coss
-
400
Crss
-
100
td(on)
-
70
td(off)
-
100
If
-
70
pF
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
(VOO = 0.5 Rated VOSS,
10 ~ 3.0 A,
Rgen ~ 50 ohms)
Rise Time
Turn-Off Delay Time
Fall Time
tr
40
ns
SOURCE-DRAIN DIODE CHARACTERISTICS'
IRFF120
VSO
-
2.5
Vdc
IRFF123
VSO
2.3
Vdc
(IS ~ Rated 10(on),
VGS ~ 0)
ton
-
Negligible
ns
200 (Typ)
ns
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Ti me
trr
'Pulse Test: Pulse Width", 300 I-'s, Duty Cycle'" 2.0%.
-j
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-99
IRFF210
IRFF213
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS
~
1.0 mOl
Symbol
IRFF210
IRFF213
Unit
VDSS
200
150
Vdc
VDGR
200
150
Vdc
Gate-Source Voltage
±20
VGS
Drain Current
Continuous
Pulsed
CASE 79-05, STYLE 6
TO-39 (TO-205AF)
Iifj
Vdc
Adc
2.2
9.0
ID
IDM
~
Total Power Dissipation @ TC
Derate above 25"C
25"C
1.8
7.5
15
0.12
Watts
TJ, Tsto
-55 to 150
"C
Thermal Resistance Junction to Case
R8JC
8.33
"CIW
Thermal Resistance Junction to Ambient
R8JA
175
"CIW
TL
300
"C
PD
Operating and Storage Temperature Range
,lIT
wrc
21
3 Drain
,~
G~
1 Source
THERMAL CHARACTERISTICS
Maximum Lead Temperature
TMOS FET
TRANSISTORS
N-CHANNEL -
ENHANCEMENT
1.6 mm from Case for 10 s
ELECTRICAL CHARACTERISTICS (TC ~ 25"C unless otherwise noted.)
Characteristic
•
Symbol
Min
Max
Unit
V(BR)DSS
200
150
-
Vdc
-
250
!
u
z
200
~
160
o
.9 120
80
40
/'
VGS - OV
/ ./
// .,.
'1/..;-
-0.5 V
l
J: .....
V/
~V
&- .....
,.-
-1.0V
1.5~=
-
2.0V-
2.5~3.0 V
3.5 V
~
2.0
4.0
I
6.0
8.0
10
12
14
16
18
20
VDS. DRAIN·SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-107
Jill thru Jl13
CASE 29-04. STYLE 5
TO-92 (TO-226AAI
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Gate Voltage
Rating
VOG
-35
Vdc
Gate-Source Voltage
VGS
-35
Vdc
Gate Current
IG
50
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
625
5.68
mW
mwrc
Lead Temperature
TL
300
°c
TJ, Tstg
-55to +150
°c
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
JFET
CHOPPER TRANSISTORS
N-CHANNEL -
DEPLETION '
25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
35
IGSS
-
Max
Unit
OFF CHARACTERISnCS
Gate-Source Breakdown Voltage
(lG = -1.0 !LA)
Gate Reverse Current
(VGS = -15V)
Gate Source Cutoff Voltage
(VOS = 5.0 V, 10 = 1.0 !LA)
-1.0
Drain-Cutoff Current
(VOS = 5.0 V, VGS = -10 V)
-3.0
-1.0
-0.5
10(off)
nA
V
VGS(off)
J111
J112
J113
Vdc
-10
-5.0
-3.0
-
1.0
20
5.0
2.0
-
nA
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current"
(VOS = 15 V)
Static Drain-Source On Resistance
(VOS = 0.1 V)
lOSS
J111
J112
J113
rOS(on)
J111
J112
J113
Drain Gate and Source Gate On-Capacitance
(VOS = VGS = 0, f = 1.0 MHz)
Cdg(on)
+
Csg(on)
-
mA
Ohms
-
30
50
100
-
28
pF
Drain Gate Off-Capacitance
r_!YGS = -10 V, f = 1.0 MHz)
Cdg(off)
-
5.0
pF
Source Gate Off-Capacitance
(VGS = -10 V, f = 1.0 MHz)
Csg(off)
-
5.0
ipF
'Pulse Width = 300
p,S,
Duty (' Icle = 3.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-108
J174 thru J177
CASE 29-04, STYLE 30
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
Unit
VGS
30
Vdc
Gate Current
IG
50
mA
Total Device Dissipation @ TA = 25'C
Derate above 25'C
PD
350
2.8
mW
mW/,C
Tsta
-65to +150
'C
Storage Temperature Range
3 Source
JFET
CHOPPER TRANSISTORS
P-CHANNEL - DEPLETION
Refer to MPF970 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
30
-
Vdc
-
1.0
nA
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !LA)
Gate Reverse Current
(VGS = 20 Volts)
IGSS
Gate Source Cutoff Voltage
(VDS = -15V,ID = -10nA)
Vdc
VGS(off)
J174
J175
J176
Jl77
5.0
3.0
1.0
0.8
10
6.0
4.0
2.5
-2.0
-7.0
-2.0
-1.5
-100
-60
-25
-20
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = -15V)
Static Drain-Source On Resistance
(VDS'" -0.1 Volt)
'Pulse Width
=
mA
IDSS'
J174
J175
J176
Jl77
rDS(on)
J174
J175
J176
Jl77
n
-
-
300 p.s, Duty Cycle'" 3.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-109
85
125
250
300
•
J201 thru J203
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
"I ,~~'"
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
40
Vdc
Drain-Gate Voltage
VDG
40
Vdc
Gate-Source Voltage
VGS
40
Vdc
IG
50
mA
Po
310
2.82
mW
mwrc
Tstg
-65 to +150
"C
Gate Cu rrent
Total Device Dissipation @ TA
Derate above 25"C
~
25"C
Storage Temperature Range
3
2 Source
JFETs
LOW FREQUENCY/LOW NOISE
N-CHANNEL -
DEPLETION
Refer to 2N4220 for graphs.
•
ELECTRICAL CHARACTERISTICS
(TA ~ 25"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-40
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ -1.0~)
Gate Reverse Current
(VGS ~ -20 V)
IGSS
Gate Source Cutoff Voltage
(VDS ~ 20 V, 10 ~ 10 nA)
-
-100
Vdc
VGS(off)
J201
J202
J203
pA
-0.3
-0.8
-2.0
-1.5
-4.0
-10.0
0.2
0.9
4.0
1.0
4.5
20.0
500
1000
1500
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS ~ 20 V)
mA
lOSS'
J201
J202
J203
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS ~ 20 V, f ~ 1.0 kHz)
J201
J202
J203
IVIsI'
'Pulse Width", 2.0 ms.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-110
!£mhos
J270
CASE 29-04, STYLE 30
TO-92 (TO-226AA)
,',~~'"
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
Gate Current
IG
50
mA
Total Device Dissipation @ TA = 25·C
Derate above 25°C
PD
360
3.27
mW
mWf'C
Tsta
-65 to +150
·C
Storage Temperature Range
23
3 Source
JFET
CHOPPER TRANSISTOR
P-CHANNEL -
DEPLETION
Refer to MPF970 for graphs.
I
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted.)
Symbol
Min
V(BR)GSS
30
-
Vdc
-
200
pA
VGS(off)
0.5
2.0
Vdc
Forward Transfer Admittance
(VDS = -15 V, f = 1.0 kHz)
IYfsl
6000
15000
/Lmhos
Output Admittance
(VDS = -15 V, f = 1.0 kHz)
IYosl
-
200
/Lmhos
Input Capacitance
NDS = -15 V, f = 1.0 MHz)
Ciss
-
32
pF
Reverse Transfer Capacitance
(VDS = -15 V, f = 1.0 MHz)
Cros
-
8.0
pF
Characteristic
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0pA)
Gate Reverse Current
(VGS = 20 Volts)
IGSS
Gate Source Cutoff Voltage
(VDS= -15V,ID= -1.0nA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
NDS = -15V)
SMALL-SIGNAL CHARACTERISTICS
·Pulse WIdth,;;;; 2.0 ms.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-111
•
J300
CASE 29-04. STYLE 5
TO-92 (TO-226AA)
1 Drain
,~~
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VOG
-25
Vdc
IG
10
rnA
Po
350
3.5
mW
mWf'C
Lead Temperature
(1/16" from Case for 10 Seconds)
TL
300
°C
Junction Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
Tst!!
-55 to + 150
°C
Orain-Gate Voltage
Gate Current
Total Oevice Oissipation @ TA
Oerate above 25°C
=
25°C
2 Source
JFET
HIGH FREQUENCY AMPLIFIER
N-CHANNEL -
ELECTRICAL CHARACTERISTICS (TA
•
3
= 25°C unless otherwise
OEPLETION
noted.)
Charactaristic
Symbol
Min
V(BR)GSS
-25
IGSS
-
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 pA, VOS = 0)
Gate Reverse Current
(VGS = -15V,VOS
= 0)
Gate Source Cutoff Voltage
(VOS = 10 V, 10 = 1.0 rnA)
-
Vdc
500
pA
VGS(off)
-1.0
-6.0
Vdc
lOSS
6.0
30
rnA
-
1.0
Vdc
9000
I'mhos
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = 10 V, VGS = 0)
Gate-Source Forward Voltage
(VOS = 0, IG = 1.0 rnA)
VGS(f)
SMALL·SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 10 V, 10 = 5.0 rnA, f
=
1.0 kHz)
Output Admittance
(VOS = 10 V, 10 = 5.0 rnA. f
=
1.0 kHz)
Input Capacitance
(VOS = 10 V, 10
5.0 rnA, f
=
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 10 V, 10 = 5.0 rnA, f
=
1.0 MHz)
=
IVlsl
4500
IVosl
-
200
I'mhos
Ciss
-
5.5
pF
Crss
-
1.7
pF
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-112
J304
J30S
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
1 Drain
MAXIMUM RATINGS
Symbol
Value
Drain-Gate Voltage
Rating
VDG
-30
Vdc
Gate-Source Voltage
VGS
-30
Vdc
Gate Current
IG
10
mA
Total Device Dissipation @J TA = 25"C
Derate above 25"C
Po
350
3.5
mW
mWrC
Lead Temperature
(1116" from Case for 10 Seconds)
TL
300
"c
TJ, T stg
-55to +150
"C
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
Unit
2 Source
JFET
HIGH FREQUENCY
AMPLIFIERS
N-CHANNEL -
DEPLETION
25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
30
-
Vdc
IGSS
-
100
pA
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 pA, VDS = 0)
Gate Reverse Current
(VGS = -20 V, VOS
= 0)
Gate Source Cutoff Voltage
(VOS = 15 V, 10 = 1.0 nA)
Vdc
VGS(off)
-2.0
-0.5
J304
J305
-6.0
-3.0
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(YOS = 15 V, VGS = 0)
J304
J305
SMALL-SIGNAL CHARACTERISTICS
Output Admittance
(VOS = 15 V, VGS
= 0, f =
Forward Transconductance
(VOS = 15 V, VGS = 0, f
IYosl
-
50
4500
3000
7500
!,mhos
Re(Yf.)
=
!,mhos
1.0 kHz)
1.0 kHz)
J304
J305
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-113
-
•
J308 thru J310
CASE 29·04, STYLE 5
TO·92 (TO·226AA)
I
MAXIMUM RATINGS
Rating
lOrain
3~
.
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Oissipation @ TA = 25'C
Oerate above 25'C
Po
350
3.5
mW
mWI'C
Junction Temperature Range
TJ
-55to +125
'C
Storage Temperature Range
Tstll
-55to +150
'C
Gat~
12 3
2 Source
JFET
VHF/UHF AMPLIFIERS
N-CHANNEL -
DEPLETION
Refer to U308 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characterlatic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
-25
-
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 pA, VOS = 0)
Gate Reverse Current
(VGS = -15 V, VOS = 0, TA = 25'C)
(VGS = -15 V, VOS = 0, TA = +125'C)
Gate Source Cutoff Voltage
(VOS = 10 V, 10 = 1.0 nA)
IGSS
-
-
-1.0
-1.0
-
-6.5
-4.0
-6.5
-
Vdc
VGS(off)
-1.0
-1.0
-2.0
J308
J309
J310
nA
pA
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(1)
(VOS = 10 V, VGS = 0)
lOSS
J308
J309
J310
-
12
12
24
Gate-Source Forward Voltage
(VOS = O,IG = 1.0 mAl
VGS(f)
-
mA
60
30
60
1.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
Common-Source Input Conductance
(VOS = 10 V, 10 = 10 mA, f = 100 MHz)
Re(Yis)
J308
J309
J310
Common-Source Output Conductance
(VOS = 10 V, '0 = 10 mAo f = 100 MHz)
Re(yos)
Common-Gate Power Gain
(VOS = 10 V, 10 = 10 mA, f = 100 MHz)
Gpg
Common-Source Forward Transconductance
(VOS = 10 V, 10 = 10 mA, f = 100 MHz)
Re(Yfs)
Common-Gate Input Conductance
(VOS = 10 V, 10 = 10 mAo f = 100 MHz)
Re(Yig)
Common-Source Forward Transconductance
(VOS = 10 V, 10 = 10 mAo f = 1.0 kHz)
-
0.7
0.7
0.5
0.25
Common-Source Output Conductance
(VOS = 10 V, 10 = 10 mAo f = 1.0 kHz)
gos
12
8000
10000
8000
-
-
20000
20000
18000
-
-
250
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-114
12
mmhos
mmhos
dB
mmhos
mmhos
I'mhos
9fs
J308
J309
J310
16
-
I'mhos
J308 thru J310
ELECTRICAL CHARACTERISTICS (continued) (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Common-Gate Forward Transconductance
(VOS = 10 V, 10 = 10 rnA, 1= 1.0 kHz)
Common-Gate Output Conductance
(VOS = 10 V, 10 = 10 rnA, 1= 1.0 kHz)
gig
J30B
J309
J310
Min
-
gog
J30B
J309
J310
Gate-Drain Capacitance
(VOS = 0, VGS = -10 V, f = 1.0 MHz)
Cgd
Gate-Source Capacitance
(VOS = 0, VGS = -10 V, 1= 1.0 MHz)
Cgs
Typ
Max
Unit
/IomhoS
13000
13000
12000
-
150
100
150
-
-
/Iomhos
-
-
1.B
2.5
pF
4.3
5.0
pF
1.5
-
dB
10
-
nV/YHz
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 10 V, 10 = 10 rnA, f = 450 MHz)
NF
Equivalent Short-Circuit Input Noise Voltage
(VOS = 10 V, 10 = 10 rnA, f = 100 Hz)
en
-
(1) Pulse Test: Pulse Width .. 300 /loS, Duty Cycle .. 3.0%.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-115
JF1033B, S, Y
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
"I ~~'"
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
20
Vdc
Gate-Source Voltage
VGS
25
Vdc
10
20
mA
Drain Current
Forward Gate Current
IGF
10
mA
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
310
2.82
mW
mwrc
TJ. Tstg
-65to +150
·C
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS
•
(TA
=
3
2 Source
JFET
HIGH FREOVENCY AMPLIFIERS
N-CHANNEL DEPLETION
25'C unless otherwise noted.)
Symbol
Min
Max
Gate-Source Breakdown Voltage
(lG = -10 pA)
V(BR)GSS
-25
Drain-Source Breakdown Voltage
(10 = 10 pA)
V(BR)OGO
20
-
IGSS
-
Characteristic
Unit
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = -10 V. VOS
= 0)
Gate Source Cutoff Voltage
(VOS = 10 V. 10 = 10 pA)
VGS(off)
Vdc
Vdc
-100
nA
-1.0
-8.0
Vdc
2.5
5.0
10.0
6.0
12.0
20.0
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = 10 V. VGS = 0)
mA
lOSS
JF1033Y
JF1033B
JF1033S
SMALL-SIGNAL CHARACTERISTICS
Forward Transconductance
(VOS = 10 V, VGS = 0, f
=
1.0 kHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 10 V, VGS
= 0, f =
100 MHz)
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
4-116
MFE120
thru
MFE122
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
I
MAXIMUM RATINGS
Rating
Symbol
Value
VOS
+25
Vdc
10
30
mAdc
Po
300
1.7
mW
mWf'C
TJ, Tstg
-65 to + 175
'C
Orain-Source Voltage
Orain Current
Total Oevice Oissipation @ TA = 25'C
Oerate above 25'C
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
Unit
lOrain
~::=..
Gate 1
3
2
Gate 2
""
Case
DUAL-GATE MOSFET
VHF AMPLIFIERS
N-CHANNEL -
DEPLETION
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)OSX
25
-
-
Vdc
Gate 1-Source Breakdown Voltage
(lG1 = ± 10 !lAdc, VG2S = 0)
V(BR)G1S0
·±7.0
-
±20
Vdc
Gate 2-Source Breakdown Voltage
(lG2 = ± 10 !lAdc, VG2S = 0)
V(BR)G2S0
±7.0
-
±20
Vdc
20
nAdc
20
nAdc
-
-4.0
Vdc
-
-4.0
Vdc
2.0
5.0
2.0
7.0
10
9.0
18
30
20
8000
10,000
-
18,000
20,000
4.5
4.5
7.0
6.0
0.023
-
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(10 = 100 !lAdc, Vs = 0, VG1S
=
-4.0 V, VG2S
Gate 1 Leakage Current
(VG1S = +6.0 Vdc, VG2S
= 0, VOS = 0)
Gate 2 Leakage Current
(VG2S = +6.0 Vdc, VG1S
= 0, VOS = 0)
=
+ 4.0 V)
IG1SS
IG2SS
Gate 1 to Source Cutoff Voltage
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10
Gate 2 to Source Cutoff Voltage
(VOS = 15 Vdc, VG1S = 0,10
=
VG1S(off)
200 !lAdc)
VG2S(off)
= 200 !lAdc)
-
-
-
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = 15 Vdc, VG1S = 0, VG2S
mAdc
loSS
= 4.0 Vdc)
MFE120
MFE121
MFE122
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Gate 1 to Orain)
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 10 mAdc, f = 1.0 kHz)
MFE120,22
MFE121
Input Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = lOSS, f = 1.0 MHz)
MFE120,22
MFE121
IYfsl
Ciss
Reverse Transfer Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAdc, f = 1.0 MHz)
Output Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = lOSS, f = 1.0 MHz)
erss
Coss
MFE120,22
MFE121
-
pF
pF
pF
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-117
"mhos
2.5
2.5
4.0
3.5
•
MFE120 thru MFE122
ELECTRICAL CHARACTERISTICS (continued) (TA
= 25·C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS
NF
Noise Figure
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAde, Zs is optimized for NF)
(f = 105 MHz -'- Figure 1)
(f = 60 MHz - Figure 3)
(f = 200 MHz - Figure 3)
•
-
MFE120
MFE121
MFE121
17
20
-
Common-Source Conversion Power Gain (Gate 1 Injection, Figure 2)
(VOS = 15 Vdc, VG2S = 4.0 Vdc, Local
Oscillator Voltage = 925 mVrms)
(Signal Frequency = 60 MHz, Local Oscillator
MFE122
Frequency = 104 MHz)
(Signal Frequency = 200 MHz, Local Oscillator
MFE122
Frequencv = 244 MHz)
Gc
17
19.6
27.8
18.6
-
100
-
60MHz
105MHz
0.11'F
82 k
1
20(1 MHz
15
16.5
-
12
13.3
-
o-~~_ _~~-'II\IIr-:l
87k
Ll
L1
0.33 I'H
= 16 AWG 6 112 Turns,
1" Long De
= 16 AWG. 3 112 Turns.
0.7" Long. 0.2 De
L2
0.471'H
= 16 AWG 5 114 Turns.
1" Long, 7/16" De
= 16 AWG, 4 1/2 Turns,
0.65" Long, 0.2" De
All Feedthrough Capacitors 1000 pl.
All Variable Capacitors JOHANSON JMC2951, 3.0-15 pF
10 k
t (
50 OHM
INPUT >-~-T~~~~~------~~
270
FIGURE 2 -
O.lI'F
60 ANO 200 MHz CONVERSION GAIN TEST CIRCUIT
H
+24
56
~.~~----1---'
IF
44 MHz
LO
104.244 '-"-->-JYVY'-......=--.
MHz
1 Vrms
330 k
~
56
RF
8~~~0>-+-;--~~~-+--~-i~-T~1~OO~k~~~
L2
60 MHz
200 MHz
Ll
10 Turns == 22 Enameled
on MILLER 4500 4 Core
31/2 Turns = 18.1/4"
De. 112" Long
L3
15 Turns =25 Enameled
on MILLER 4500 1 Cor.
15 Turns = 26 Enameled
on MILLER 4500 1 Core
L4
4 Turns = 20 Enameled
on Sure Core as l3
4 Turns == 26 Enameled
on Sure Core as L3
112" Long
All Feedthrough Capacitors 1000 pl.
All Variable Capacitors JOHANSON JMC2951, 3.0-15 pF
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-118
mV
dB
60,105 ANO 200 MHz POWER GAIN ANO NOISE FIGURE TEST CIRCUIT
+15V
OPTIONAL AGC
6.0
5.0
5.0
dB
MFE120
MFE121
MFE121
Level of Unwanted Signal for 1.0% Cross Modulation
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 6.0 mAde)
150 k
2.9
2.6
2.6
-
Gps
Common Source Power Gain
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAde, Zs is optimized for NF)
(f = 105 MHz - Figure 1)
(f = 60 MHz - Figure 3)
(f = 200 MHz - Figure 3)
RGURE 1 -
dB
MFE120 thru MFE122
FIGURE 3 - 60 AND 200 MHz CONVERSION POWER GAIN
VOD
.00'
---,-----------~
'0 k
560 k
D
1~00,
From 50 11 ~oo,
Source
5
=
0-30 PF~ .00'
.00'1
I
270
!
0-20 pF
To 5011
Load
=
l1 2% T #18, %N diameter center tapped
L2 3112 T #18, 0/'6" diameter tapped 1hT from cold end
C = ILF unless otherwise specified
COMMON-SOURCE ADMITTANCE PARAMETERS
(V OS = 15 Vde, V G2S = 4.0 V,de, 10 = 6.0 mAde)
FIGURE 4 -INPUT ADMITTANCE
1.4
7.0
1.2
6.0
11.0
oS
~ 0.8
/
~
/
~ 0.6
8
~
0.4
-
0.2
o
30
40
5.0
1/
/
1/
/g.
E ~
.sw
70
100
200
0.02 5
w
~
3
.0
;0
~ ~
2.0
i
0.020
/
«
~ 0.01 0
--
0.00 5
0
300
0
30
40
V
....
50
3
w
Q(,
u
z
~
12
o
8 11
/
~ 10
:i!
9.0
--
~
~
8.
i'
7.030
0
40
50
/
6
/
/
.0
.........
~
5.0 j:!
ill
4.0
~
'"w
-bfs
./
300
3.5
200
E
oS
~ O. 5
~ O. 4
300
bos/
o
z
~~ o. 2
o
/
«
:i!
1.0 ~
~
3
]" O•6
8 o.3
2.0 ~
100
0.7
3.0 ~
«
70
200
E
/
'"w
I-
--
~
100
FIGURE 7 - OUTPUT ADMITTANCE
.OJ
7
4
'li
70
f. FREQUENCY (MHz)
FIGURE 6 - FORWARD TRANSFER ADMITTANCE
oS
b~
./
0.01 5
f. FREQUENCY (MHz)
!l'
/
/
§
t
1.0
I..--"
50
0.03 0
4.0 ~
./"
-
0.035
-g -;;;
./
bis/
•
FIGURE 5 - REVERSE TRANSFER ADMITTANCE
~
~o
£
f, FREQUENCY (MHz)
---
o
30
40
50
,/
-
70
......
2
/
1
/'01
1
T
0
100
f. FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-119
2
/
./
.1
/
200
0
300
MFE120 thru MFE122
FIGURE 8 - GAIN REDUCTION
./
f·
FIGURE 9 - CONVERSION POWER GAIN
.,,---
20
~ 18
~OO MHz /
I
z
~
/
'"
~
z
I
c
~
~
..-
16
14
12
10
V
--r---
60MHz
..-
200 MHz
8.0
----- -
6.0
~4. 0
'"
10
-Z.o
o
+Z.O
+4.0
2.0
o
+6.0
0.35
VG2S. GATE ZTO SOURCE VOLTAGE (VOLTS)
0.65
0.95
. 1.25
1.55
LOCAL OSCILLATOR INJECTION LEVEL AT GATE 1 (Vrm,)
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-120
1.85
MFE130
thru
MFE132
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
I
MAXIMUM RATINGS
Rating
Symbol
Value
VOS
25
Vdc
10
30
mAdc
Po
300
mW
1.71
mWrC
Tchannel
TstQ
-65 to + 175
°C
Orain-Source Voltage
Drain Current
Total Oevice Oissipation IjiJ TA
(Package Limitation)
Oerate above 25°C
= 25°C
Operating and Storage Channel
Temperature Range
Unit
1 Drain
~~:.
Gate 1
3
2
Gate 2
""
Case
DUAL-GATE
MOSFET
VHF AMPLIFIERS
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSX
25
-
Gate 1-Source Breakdown Voltage
(lG1 = ± 10 !lAdc, VG2S = 0)
V(BR)G1S0
±7.0
-
±20
Vdc
Gate 2-Source Breakdown Voltage
(IG2 = ± 10 !lAdc, VG2S = 0)
V(BR)G2S0
±7.0
-
±20
Vdc
Typ
Max
Unit
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(10 = 10 !lAdc, Vs = 0, VG1 = -4.0 V, VG2
=
-
Vdc
+4.0 V)
IG1SS
-
-
20
nAdc
IG2SS
-
-
20
nAdc
Gate 1 to Source Cutoff Voltage
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 200 !lAde)
VG1S(off)
-
-
-4.0
Vdc
Gate 2 to Source Cutoff Voltage
(VOS = 15 Vdc, VG1S = 0,10 = 200 !lAde)
VG2S(off)
-
-
-4.0
Vdc
-
20000
/LmhOS
Gate 1 Leakage Current
(VG1S = ±6.0 Vdc, VG2S
= 0, VOS = 0)
Gate 2 Leakage Current
(VG2S = ±6.0 Vdc, VG1S
= 0, VOS = 0)
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = 15 Vdc, VG1S = 0, VG2S = 4.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance (Gate 1 connected to Drain)
IVlsl
8000
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 10 mAdc, 1= 1.0 kHz)
Ciss
-
4.5
7.0
pF
Reverse Transler Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 6.0 mAdc, 1= 1.0 MHz)
Crss
-
0.023
0.05
pF
Output Capacitance
(VOS = 15 Vdc, VG2S = 4_0 Vdc, 10 = lOSS, I
Coss
-
2.5
4.0
pF
Input Capacitance
(VOS = 15 Vdc VG2S
= 4.0 Vdc,
10 = lOSS, 1= 1.0 MHz)
=
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure (Figure 7)
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAdc, Zs is optimized lor NF)
(f = 105 MHz)
(f = 60 MHz)
(f = 100 MHz)
NF
MFE130
MFE131
MFE131
dB
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-121
2.9
2.5
3.0
5.0
5.0
5.0
..
MFE130 thru MFE132
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Common Source Power Gain (Figure 7)
(VOS = 15 Vdc, VG2S = 4.0 Vdc,
10 = 6.0 mAde, Zs is optimized lor NF)
(I = 105 MHz)
(I = 60 MHz)
(I = 200 MHz)
Min
Typ
Max
Unit
G ps
dB
MFE130
MFE131
MFE131
Level 01 Unwanted Signal lor 1.0% Cross Modulation
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 6.0 mAde)
-
Common-Source Conversion Power Gain (Gate 1 Injection, Figure 8)
(VOS = 15 Vdc, VG2S = 4.0 Vdc, Local
Oscillator Voltage = 925 mVrms)
(Signal Frequency = 60 MHz, Local Oscillator
MFE132
Frequency = 104 MHz)
(Signal Frequency = 200 MHz, Local Oscillator
MFE132
Frequency = 244 MHz)
Gc
17
20
17
23
27
20
-
100
-
-
mV
dB
15
16.5
-
12
14
-
COMMON-SOURCE ADMITTANCE PARAMETERS
•
(VOS
= 15 Vdc, VG2S = 4.0 Vdc, 10 =6.0 mAde)
FIGURE 2 - REVERSE TRANSFER ADMITTANCE
FIGURE 1 - INPUT ADMITTANCE
1.4
I
7.0
1.1
6.0
1.0
5.0
.,.
4.0
E
3.0
" "gO.015
~
-bis/
§
./
~ 0.8
"
V
"
Q
Z
2
0.4
....
-
0.1
o
30
40
60
./
.....80
.,.
0.030
0.030
/
.l!0.015
w
u
1.0
./
gis
1.0
100
100
I
i
~
-
;
8:
15
-
0.005
o
3D
40
14
--....
/
13
.....
11
~
10
'rs
60
~
9. 030
40
80
100
0
lOO
...........
-g 0.6
ij
3.0.,.
.l!
E 0.5
w
1.5.§
j
E
E
4.0 ~
"
t:
w
3.0 ~
100
3.5
6.0
2.0
100
100
FIGURE 4 - OUTPUT ADMITTANCE
1.0
60
80
0.7
w
1/
-
1
0.005
7.0
5.0
Vobis
~ 12
~"
/
./
'"w
~
0.010 v..
f, FREQUENCY (MHd
,/
'Is
"
0.D15$
-b rs
~
o
z
./
80.010
300
0.02n~
./
z
FIGURE 3 - FORWARD TRANSFER ADMITTANCE
ij
E
E
~O.O20
f, FREQUENCY (MH,I
~1 6
0.015~
/
E
~ E
z
./
t; 0.6
0.035
0.035
:i
E
w
u
u
z
i"
0.4
8
0.3
i
0.1
,g
o
-bos
./"
- ....
0.1
o
3D
300
f, FREQUENCY (MHd
./
90s
1
O~
1.5~
./'
.
!;
1.O~
~
0.5..8
o
40
60
80
100
f, FREQUENCY (MHd
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-122
V
100
300
MFE130 thru MFE132
FIGURE 5 - GAIN REDUCTION
FIGURE 6 - CONVERSION POWER GAIN
--
25
..."",-
10
=
z
0
~
20
~
40
~
50
60
.. .
=
1"".
S 23
z
'"~
~
,
21
~
z
200MHz
o
u.17
I
~
~
I
o
-
o
~ 19
"
70
-2.0
......- -~
~
+2.0
+4.0
+6.0
.......
15
0.5
+8.0
VG2, GATE 2T0 GROUND VOLTAGE IVOLTS)
-
f..--
60 lMHz
;;:
60MHz
30
z
,..
..
~
200 MHz
f.---
0.75
1.0
1.26
1.5
LOCAL OSCILLATOR INJECTION LEVEL AT GATE 1 (Vrm~
FIGURE 7 - 50, 10S AND 200 MHz POWER GAIN AND NOISE FIGURE TEST CIRCUIT
82 k
150 k
10k
OPTIONAL AGe
o---I----~~:-"V\f'y-__:l
•
82 k
50 OHM
L1
OUTPUT
50 OHM
INPUT
3.0·15 pF
270
30·15 pF
L2
L1
60MHz
105 MHz
#16 AWG, 6112 Turns, 1" long, 1/4" Dla.
200 MHz
#16 AWG, 3 112 Turns, 0.7" Long, 0.2" Dia.
An Feedthrough Capacitors 1000 pF
:::16 AWG, 5 1/4 Turns, '" long, 7/16" Dia.
=16 AWG, 4 1/2 Turns, 0.65" Long. 0.2" Ola,
All Variable CapocitorsJOHANSON JMC2951, 3.0-15 pF
FIGURE 8 - 60 AND 200 MHz CONVERSION GAIN TEST CIRCUIT
+24
IF
44MHz
330 k
'LO
1~~44>-+--+__rv~~~~
1 Vrms
.p
56
RF
60,200
MHz
270 -::-
Rl
I
D.DOI"F
RI
L1
~
60 MHz
10 k
10 Turn, #22 Enamoled
on MILLER 4500-4 Core
0.33"H
DELEVAN
200 MHz
1.0 k
31/Hurn, #18, 1/4"
O~., 1/2" Long
L3
L4
15 Turns #26 Enameled 4 Turns #26 Enameldd
onMILLER4500-ICor.onSam.Corea,L3
21/2 Turns
15 Turns #26 Enam"ed 4 Turns #26 Enamaled
#18,3/8" Oia., on MILLER 4500-1 Coro on Samo Cor. as L3
112" Long
All Feedthrough Capacitors 1000 pF.
All Variabla Capacitors JOHANSON JMC2951, 3.0-15 pF_
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-123
N-CHANNEL DUAL-GATE
SILICON-NITRIDE PASSIVATED
MOS FIELD-EFFECT TRANSISTORS
MFE201
thru
· .. depletion mode dual gate transistors designed for VHF amplifier and
mixer applications.
• MFE201 MFE202 MFE203 -
MFE203
VHF Amplifier
VHF Mixer
IF Amplifier
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
2S
• Low Reverse Transfer Capacitance Crss = 0.03 pF (Max)
• High Forward Transfer Admittance IVfsl = 8-20 mmhos - MFE201, MFE202
= 7-15 mmhos - MFE203
Gate 2
• Diode Protected Gates
MAXIMUM RATINGS
Rating
Symbol
VOSX
20
Vdc
Orain-Gate Voltage
VOG1
VOG2
30
30
Vdc
Drain Current -
IG1
IG2
Continuous
0:10
0:10
mAde
10
50
mAde
Total Power Oissipation @ TA
Oerate above 25°C
=
25°C
Po
360
2.4
mW
mWrC
Total Power Oissipation @ TC
Oerate above 25°C
=
25°C
Po
1.2
8.0
Watt
mW/oC
Storage Channel Temperature Range
I
Unit
Orain-Source Voltage
Gate Current
•
Value
Tstg
-65 to +200
°c
Junction Temperature Range
TJ
-65 to +175
°c
Lead Temperature, 1/16" From Seated
Surface for 10 Seconds
TL
300
°c
r in
:
3
4
Gate 1
Source
DUAL-GATE
MOSFETs
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
I
Characteristic
Max
Symbol
Min
Typ
Unit
V(BR)OSX
20
-
V(BR)G1S0
±6.0
±12
±30
Vdc
V(BR)G2S0
±6.0
±12
0:30
Vdc
VG1S(off)
-0.5
-1.5
-5.0
Vdc
VG2S(off)
-0.2
-1.4
-5.0
Vdc
-
±0.04
±10
-10
nAdc
/LAdc
-
±0.05
0:10
-10
nAdc
;<"'~2V-
'"
~
12
I .........
16
/
/
2
I
'(//
JrJ'
•
1/
~o
__ I.s
20
/
, -7
*~
"VG1S=~
1
18
9
'"
1
~lV
10
12
14
10. DRAIN CURRENT (mAl
'0 '4 _ VOS = ISV
~ 13
/
, / +1, V-
-
OV_
-
IV- -
VG2S
+1
Figure 5. Drain Current versus
Gate-One-to-Source Voltage
.......
.-
= 12.8 mA
.s 121 _lOSS
f = I kHz
/
,
'" "- /
," " "
'rF ~VG2S
".'"
9 vGlS / . /
8 -IV V/"
1
-
VDS=ISV
---fVG2S - +4V
lOSS = 12.8 mA f--" 7
f = 1 kHz
............-O.SV
OV
+12j.;;;o
-I
-O.S
0
+0.5
VG1S. GATE·ONE·TO·SOURCE VOLTAGE (VOLTSI
Figure 4. Drain Current versus Drain-to-Source Voltage
.s 12
-
7' 7"
£I 6
-
7r
~ 10
O.S v
/"
./
14
12
:s
,/
1
VG2S= +~
.s
+O.SV
/
i
T
-
+IV
VGlS
V
/'"
[.",.--
"-
"
.-......
......
"'-
""-"'-
............
-
1
VG2S = 4 V
""""
---
........
~
"'- -..;:
I""":
r"'::
r-
-1
-0.5
0
+O.S
VGlS. GATE·ONE·TQ·SOURCE VOLTAGE (VOLTSI
t-!!
OV
+1
Figure 7. Small-Signal Common-Source Gate-One
Forward Transfer Admittance versus
Gate-One-to-Source Voltage
Figure 6_ Small-Signal Common-Source Gate-One
Forward Transfer Admittance versus Drain Current
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-126
MFE201 thru MFE203
TYPICAL CHARACTERISTICS
-0 14
~
1
13 t---
~11
~
t---
I
.1
VOS=1SV
lOSS = 12.8 rnA f = 1 kHz
..s 12 t---
r--- f-VG1S
=
0v
-
r- VOS = 15V
r- VG1S = OV
r- lOSS = 12.8
1 MHz
r-f
r-~
~~0.5V_ t---
10
~V
:;; 9
r-
./
~ 8
/
'"t1:
~
V
~
I
.Y
Y
/
V
/
V
Co..
/'
./
I
~
~O
o
o
+1
+1
+3
VG1S. GATE·lWO·TO·SOURCE VOLTAGE (VOLTS)
--1
-5
+4
Figure 8. Small-Signal Common-Source Gate-One
Forward Transfer Admittance versus
Gate-Two-to-Source Voltage
28
16
24
22
18
/
V
~
VOS=15V
VG1S = 4 V
f = 100 MHz
AOJUSTEO VG1S FOR 10
lOSS = 11.8 rnA
I
10
8
4
2
0
+10
IV
z
/
~
'"~ -10
.....
I
16
18
10
I
-
1
-1
VOO = 18 Vdc
f = 200 MHz
CIRCUIT IN FIGURE 1 BW=7MHz
_
lOSS = 11.8 rnA
_
rl
\.
1
I
\
NF
1/
-3
z
~ 16
j
'"ffi 14
II
~
212
z
10
~
./
/
I
I
~
!j;! 8
/
":-10
i3.
+7
20
Q
~-10
-1
0 +1
+1 +3 +4
+5 +6
VGG(GC). GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
~18
lOSS - 11.8 rnA
II
:!<
0
-2
Figure 11. Common-Source Power Gain and Spot
Noise Figure versus Gain Control Gate-Supply
Voltage - MFE201
I
+10 VOO=18V
f = 200 MHz
CIRCUIT IN FIGURE 1
+10
BW = 7 MHz
/
-40
Gps
-4O~
6
8
10
12
14
10. ORAIN CURRENT (rnA)
+30
'" -30
+5
\
'" -30
NF
Figure 10. Common-Source Power Gain and Spot
NOise Figure versus Drain Current
a;
/
~-2 0
6 1,
+4
1
\
+10
.,....
'" '" 14
U::ffi
1
2
~a.
z'"
3
1
1
0 +1 +1 +3
VG2S. GATE-lWO-TO-SOURCE VOLTAGE (VOLTS)
+30
§~ 16
~~
-4
Figure 9. Small-Signal Common-Source Gate-One
Input and Output Capacitance versus
Gate-Two-to-Source Voltage
Gps
miD 20
~.:9.
Ciss
z
"
8
6
/
VOOI = 18~
frf = 100 MHz
fLO = 145 MHz
CIRCUIT IN FIGURE 1
BW = 6 MHz
loSS = 11.8 rnA
1
14 JI
8 o2 I
/
o
o
10
100. ORAIN SUPPLY CURRENT (rnA)
Figure 12. Common-Source Power Gain versus Drain
Supply Current - MFE201
1
1
VRMS. LOCAL OSCILLATOR INPUT VOLTAGE (VOLTS)
Figure 13. Small-Signal Common-Source Conversion
Power Gain versus Local Oscillator Input
Voltage - MFE202
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-127
•
MFE201 thru MFE203
TYPICAL CHARACTERISTICS
+30
VOO = 18V
1=45MHz
CIRCUIT IN FIGURE 3
BW = 4.5 MHz
/
lOSS = 12.8 mA
+20
~+lO
z
1il
'"
1l:
~-10
I
II
CJ8._ 20
-30
t--
I
1/
I
5
f-'"
5
/
0
~
~
~
~
+7
9isL
10
'"
1
0.7 ~VOS
bis
/--
;;,
2
f-":
V
IL
50
~ 0.5 riD
1
~
w
g
:::;;
~
0.7~
5
~ VG2S
.§
7
40
r....
~
300
100
I, FREQUENCY (MHz)
300
500
1000
1
15 V
4V
10mA
,
O. 3
o. 2
,- . /
O.5~
z
0.3 ..
...
0.2 '"
'" 0.02
1i
.§
~
~
z
~
1 ~
c
0.7 ;:
O. 5~
90S
V
40
0.3.1
I
V
0.0 1
500
~
L:
V/
bos
:::;; O. 1
~ 0.07
~ 0.05
z
-~o.o 3
0.1
100
200
I, FREQUENCY (MHz)
40
Figure 15. Small-Signal Gate One Forward Transfer
Admittance versus Frequency
I
L
20
1
:.....
10
1
~VDS
;;::;
.is'
b.. bls
5
15 V
~VG2S
4V
~ 50 r-.IO 10mA
1i 30
~
9fs -
0
Figure 14. Small-Signal Common Source Insertion
Power Gain versus Gain Control Gate-Supply
Voltage - MFE203
•
I""'-.
r-..
5
J
2
1
0 +1
+2 +3 +4
+5 +6
VGG(GC), GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
100
-
VOS=15V
VG2S = 4 V
10 = 10 mA
60
I
100
0.2
0.1
200
300
500
t, FREQUENCY (MHz)
Figure 16. Small-Signal Gate One Input Admittance
versus Frequency
Figure 17. Small-Signal Gate One Output Admittance
versus Frequency
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-128
N-CHANNEL DUAL-GATE
SILICON-NITRIDE PASSIVATED
MOS FIELD-EFFECT TRANSISTOR
MFE204
· .. depletion mode dual gate transistor designed and characterized for UHF
communications applications.
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
• Package - Hermetic Metal TO-20SAF
• Silicon Nitride Passivation for Excellent Long Term Stability
• Zener Diode Protected Gates
• Common Source Power Gain Gps = 28 dB (Min) @ f = 450 MHz
• Noise Figure - 5.0 dB Max @ f = 450 MHz
MAXIMUM RATINGS
J
4 1
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOSX
20
Vdc
Drain-Gate Voltage
VOG
30
Vdc
10
50
rnA
-10
rnA
Drain Current
Reverse Gate Current
IG
Forward Gate Current
IGF
10
rnA
Total Device Dissipation @ TA = 2S"C
Derate above 2S"C
Po
360
2.4
mW
mWrC
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
1.2
0.8
mW
mWrC
TL
300
"C
TJ, T stg
-6S"C to
+ 175"C
"C
Lead Temperature
Operating and Storage Junction
Temperature Range
I
2~r!in
Gate 2
ELECTRICAL CHARACTERISTICS
3
4
Gate 1
Source
DUAL-GATE
MOSFETs
N-CHANNEL -
DEPLETION
(TA = 25"C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (10
=
Gate I-Source Breakdown Voltage (lG1
Gate 2-Source Breakdown Voltage (lG2
=
VG2
=
-5.0 V)
-
V(BR)OSX
25
± 10 mAl Note 1
V(BRIG1S0
±6.0
±30
Vdc
± 10 rnA) Note 1
V(BR)G2S0
±6.0
±30
Vdc
= VOS = 01
Gate 2 Leakage Current (VG2S
±5.0 V, VG1S = VOS = 01
Gate 1 to Source Cutoff Voltage (VOS = 15 V, VG2S = 4.0 V, 10 = 20 pAl
Gate 2 to Source Cutoff Voltage (VOS = 15 V, VG1S = 0 V, 10 = 20 pAl
Gate 1 Leakage Current (VG1S
=
=
10 pA, VG1
=
=
±5.0 V, VG2S
IGISS
IG2SS
-
Vdc
±10
nA
±10
nA
VG1S(offl
-0.5
-4.0
Vdc
VG2S(off)
-0.2
-4.0
Vdc
IYfsl
10
I
22
mmhos
I
0.03
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current"
(VOS = 15 V, VG2S = 4.0 V, VG1S
= 0 VI
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 V, VG2S = 4.0 V, VG1S
Input Capacitance
(VOS = 15 V, VG2S
= 4.0 V,
10
Reverse Transfer Capacitance
(VOS = 15 V, VG2S = 4.0 V, 10
Output Capacitance
(VOS = 15 V, VG2S
= 0 V, f =
= lOSS, f =
1.0 kHzI Note 2
Crss
=
10 rnA, f
=
= 4.0 V, 10 = lOSS, f =
Typ.
3.0
Ciss
1.0 MHz)
0.005
1.0 MHz)
Coss
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-129
Typ.
1.4
pF
pF
pF
•
MFE204
I
ELECTRICAL CHARACTERISTICS
(continued)
(TA =
25'C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
-
3.5
5.0
20
14
-
7.0
12
Unit
FUNCTIONALCHARACTENSncs
Noise Figure
(VOO = 18 V, VGG = 7.0 V, f = 200 MHz)
(VOS = 15 V, VG2S = 4.0 V, 10 = 10 rnA. f
= 450 MHz)
Common Source Power Gain
(VOO = 18 V, VGG = 7.0 V, f = 200 MHz)
(VOS = 15 V, VG2G = 4.0 V, 10 = 10 rnA, f
= 450 MHz)
Bandwidth
(VOO = 18 V, VGG
'PW
NF
dB
G ps
BW
dB
28
MHz
= 7.0 V, f = 200 MHz)
= 30 ,.., Duty Cycle .. 2.0%.
Notes:
1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate-voltage limiting network is
functioning properly.
2. This parameter must be measured with bias voltages applied for less than 6 seconds to avoid overheating.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-130
N-CHANNEL DUAL-GATE
SILICON-NITRIDE PASSIVATED
MOS FIELD-EFFECT TRANSISTOR
MFE209
· .. depletion mode dual gate transfer designed and characterized for UHF
communications applications.
• PackageHermetic Metal TO-206AF
• Silicon Nitride Passivation for Excellent Long Term Stability
• Zener Diode Protected Gates
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
2»'
!
in
!
Gate 2
• Third Order Intermodulation Distortion Curve Provided
• Common Source Power Gain Gps = 10 dB (Min) @ f = 500 MHz
• Noise Figure - 6.0 dB Max @ f = 500 MHz
3 2 1
4
3
Gate 1
4
Source
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOSX
20
Vdc
Drain-Gate Voltage
VOGl
VOG2
30
30
Vdc
Gate Current
IG1R
IG1F
IG2R
IG2F
-10
10
-10
10
mAde
Drain Current - Continuous
Total Power ~issipation @ TA
Derate above 25"C
= 25"C
Storage Channel Temperature Range
Operating Channel Temperature
I
N-CHANNEL -
10
30
mAde
Po
300
1.71
mW
mWf'C
Tsto
-65 to +200
"C
Tchannel
200
"C
TL
260
"C
Lead Temperature, 1/16" From Seated
Surface for 1a Seconds
DUAL-GATE
MOSFETs
DEPLE110N
•
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)OSX
20
-
-
Vdc
V(BR)G1SSF
7.0
-
22
Vdc
V(BR)G1SSR
-7.0
-22
Vdc
V(BR)G2SSF
7.0
22
Vdc
V(BR)G2SSR
-7.0
-22
Vdc
VGlS(off)
-0.1
-4.0
Vdc
VG2S(off)
-0.1
-4.0
Vdc
IG1SSF
-
-
-
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(10 = 10 /lAde, VG1S = -4.0 Vdc, VG2S = 4.0 Vdc)
Gate 1 - Source Breakdown Voltage
(lGl = 10 mAde, VG2S = VOS = 0)
Gate 1 - Source Reverse Breakdown Voltage
(lGl = -10 mAde, VG2S = VOS = 0)
Gate 2 - Source Forward Breakdown Voltage
(lG2 = 10 mAde, VG1S = VOS = 0)
Gate 2 - Source Reverse Breakdown Voltage
(lG2 = -10 mAde, VG1S = VOS = 0)
Gate 1 - Source Cutoff Voltage
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 50/IAde)
Gate 2 - Source Cutoff Voltage
(VOS = 15 Vdc, VG1S = 0,10 = 50 /lAde)
Gate 1 - Terminal Forward Current
(VGlS = 6.0 Vdc, VG2S = VOS = 0)
Gate 1 - Terminal Reverse Current
(VGlS = -6.0 Vdc, VG2S = VOS = 0)
(VGlS = -6.0 Vdc, VG2S = VOS = 0, TA = 150"C)
Gate 2 - Terminal Forward Current
(VG2S = 6.0 Vdc, VGlS = VOS = 0)
Gate 2 - Terminal Reverse Current
(VG2S = -6.0 Vdc, VG1S = VOS = 0)
(VG2S = -6.0 Vdc, VGlS = VOS = 0, TA = 150"C)
ON CHARACTERlSnCS
IG1SSR
IG2SSF
IG2SSR
-
20
nAdc
-
-20
-10
20
nAdc
/LAde
nAdc
-
-20
-10
nAdc
/lAde
-
Gate 1 - Zero Voltage Drain Current
(VOS = 15 Vdc, VGlS = 0, VG2S = 4.0 Vdc)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-131
MFE209
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Symbol
Min
Typ
Max
Unit
Forward Transf"r Admittance
(VOS = 15 Vdc, VG2S =4.0 Vde, 10 = 10 mAde, f = 1.0 kHz)
iVfsi
10
13
20
mmhos
Input Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vde, 10 '" 5.0 mAde, f = 1.0 MHz)
Ciss
-
4.5
7.0
pF
Reverse Transfer Capacitance
(VOS = 15 Vde, VG2S = 4.0 Vde, 10 '" 5.0 mAde, f = 1.0 MHz)
Output Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 '" 5.0 mAde, f = 1.0 MHz)
Crss
0.005
0.023
0.03
pF
Coss
0.5
2.0
4.0
pF
Characteristic
SMAU-SIGNAL CHARACTERISTICS
Common-Source Noise Figure (Figure 11)
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 10 mAde, f = 500 MHz)
NF
-
4.5
6.0
dB
Common-Source Power Gain (Figure 11)
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 10 mAde, f = 500 MHz)
Gps
10
13
20
dB
Bandwidth
(VOS = 15 Vdc, VG2S = 4.0 Vdc, 10 = 10 mAde, f = 500 MHz)
BW
7.0
-
17
MHz
TYPICAL SCATTERING PARAMETERS
•
160"
Figure 1. S11, Input Reflection Coefficient
versus Frequency
Figure 3.
S:z"
170"
180"
180"
200"
Figure 2. S12, Reverse Transmission Coefficient
versus Frequency
,611'
Forward Transmission Coefficient
versus Frequency
Figure 4. S:u. Output Reflection Coefficient
versus Frequency
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-132
MFE209
TYPICAL COMMON-SOURCE ADMITTANCE PARAMETERS
(VDS = 15 Vdc, VGS2 = 4 Vdc, ID = 10 mAde)
32
v,
ibis
o0
V
./
~
0.1
0.2
2.8
~
/
1
~
~
~
0.8
0.9
'"
1
~+1 5
~
~
~
+5
o
0
z
+101
I'--- r-....
~
u
+5 z
i'---
'"~ - 5
'"~ -10
...........
"'-
~ -1 5
r-..
~ -20
~-25
~
U
U
M
U
U
U
~
0.6 z
~
0.4 ~
U
~
U
1
0.2
~
o
~
t-- r-U
~
-
U
U
/./
""
20~
f2
25 .~
0
ibos
1. 2
V
~ O. g
,/
:>
~
./
O.6
~o. 3
f, FREQUENCY (GHzl
0
~
.s
~V
~
~ 1. 5
0
10.5~
~
.s
1°1
15~
12
2.4
]" 2. 1
~
1. 8
o ~ .....
:>
u
5 '" 5
'"~ z
"'" '" '\
ibfs
............
~
9fs
8
M
8
Figure 6. Y12. Reverse Transfer Admittance
versus Frequency
+15~
---
U
~
::1
G
5
f, FREQUENCY IGHzl
Figure 5. Yll. Input Admittance versus Frequency
.s +10
U
~
~
.s
1
/
V . . . .V
~
1.4
0.8
V9rs
/
1.6
1.2
V :1
J
ibrs /
J
o.8
o. 4
~ 0
o
7
J
4
m6
'" 1.
~ 1.2
1
0.7
2.
bl
V
0.3
0.4
0.5
0.6
f, FREQUENCY (GHzl
./1
~
V
V
3,2
u
V 9is
V
V
./
./
V
/
V
~
.s~
/" .......-
,/
V
7.5
V /
V
6
90S
0.2
0.3
0.4
0.5
0.6
0.7
f, FREQUENCY (GHzl
The Sand Y Parameters were Measured with a Hewlett Packard
HP8542A Network Analyzer,
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-133
m
o
1.5 .;
0.8
0.9
10
Figure 8. Y22. Output Admittance versus Frequency
Figure 7. Y21. Forward Transfer Admittance
versus Frequency
Ii:
~
:.5 ~
V
0.1
~
::1
•
MFE209
1
11
10 = 5to 10 mAde
VOO
10
iii 9 VG2
:Eo
f
10
w
.,..
= 15 Vdc
= 10 mAde
=6Vde
= 500 MHz
..........
Gp
......
/
1/
§ 8
~
~ 7
a
z
...:
0
1
VOS = 15 Vde
01--- I - f1 = 499 MHz
12 = 500 MHz
0
OUTPUT
1
/
/'
..........
30
50
---
9
~
~
8
NF
70 100
300
500 700 1000
RS, SOURCE RESISTANCE (OHMS)
is
-10
o
.-
/
VV
I
3RO ORDER
IMOOUTPUT
l
II
......-V
V
""
0"""-12 -120
7
3000
(SEE SCHEMATIC FIGURE 11)
-100
-SO
-60
-40
-20
INPUT POWER PER TONE (dBM)
(SEE SCHEMATIC FIGURE 11)
Figure 10. Third Order Intermodulation Distortion
Figure 9, Power Gain and Noise Figure versus
Source Resistance
Figure 10 shows the typical third order intermodulation
distortion (lMO) performance at 500 MHz.
Both fundamental output and third order IMO output
characteristics are plotted. The curves have been extrapolated to show the third order intermodulation output
intercept point.
The performance is typical for 10 between 5 mAdc and
10 mAdc. The test circuit shown in Figure 12 was used
to generate the IMO Oata.
The Test Circuit shown in Figure 11 was used to generate
Power Gain and Noise Figure as a function of Source
Resistance curves.
•
VV
-SO
INTERCE~ ~
-..:
3RO ORDER
POINT
V
F~NO~MEN~AL
1
z
4
1
50n
OUTPUT
50n
INPUT
Cl
C2
Cl = 1-20 pF JOHANSON Air Variable CAP. (14.5 pF Nominal)
C2 = 1-10 pF, JOHANSON Air Variable CAP. (5.4 pF Nominal)
C3, Cl1 = 470 pF, Low Inductance Feedthru CAP.
C4, CB, C9, Cl0 = 250 pF, Low Inductance, UNDERWOOD CAP. (J-l0l)
C5 = 0.4-6 pF, JOHANSON Air Variable CAP. (0.92 pF Nominal)
C6 = 1-10 pF JOHANSON Air Variable CAP. (5.9 pF Nominal)
C7 = 1-10 pF, JOHANSON Air Variable CAP. (3 pF Nominal)
Ll = 2.52 x 0.1 inCheS}
.
L2 = 0.4 x 0.1 inches
On ~ Sided glass Teflon®. 1 oz. copper clad, 1/16"
l3 = 1.23 x 0.2 inches ER - 2.55
VOO
@TrademarkofE.!' Dupont, DeNeumours and Co., Inc.
Figure 11. Test Circuit For Power Gain. Noise Figure
and Third Order Intermodulation Distortion
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-134
N-CHANNEL DUAL-GATE
SILICON-NITRIDE PASSIVATED
MOS FIELD-EFFECT TRANSISTORS
MFE211
MFE212
· .. high Yfs depletion mode dual gate transistors designed for VHF
amplifier and mixer applications.
CASE 20-03, STYLE 9
TO-72 (TO-206AF)
• MFE211 - VHF Amplifier/IF Amplifier
MFE212 - VHF Mixer
• High Forward Transfer Admittance -iYfsi
• Low Reverse Transfer Capacitance -
=
17-40 mmhos
Crss = 0.03 pF (Max)
• Diode Protected Gates
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VDSX
20
Vdc
Drain-Gate Voltage
VDGl
VDG2
35
35
Vdc
Rating
Gate Current
Drain Current -
IGl
IG2
Continuous
±10
±10
mAde
ID
50
mAde
Total Power Dissipation @TA
Derate above 25°C
= 25°C
PD
360
2.4
mW
mWrC
Total Power Dissipation @ TC
Derate above 25°C
=
PD
1.2
8.0
Watt
mWrc
25°C
Storage Channel Temperature Range
Tsto
-65 to +200
°c
Junction Temperature Range
TJ
-65to +175
°C
Lead Temperature, 1/16" From Seated
Surface for 10 Seconds
TL
300
°C
ELECTRICAL CHARACTERISTICS (TA
2~r:in
1
Gate 2
3 2 1
4
3
Gate 1
4
Source
DUAL-GATE
MOSFETs
N-CHANNEL -
DEPLETION
= 25°C unless otherwise noted.)
Characteristic
Max
Symbol
Min
V(BR)OSX
20
-
Vdc
Gate 1 - Source Breakdown Voltage(l)
(lGl = ±10 mAde, VG2S = VDS = 0)
V(BR)G1S0
±6.0
-
Vdc
Gate 2 - Source Breakdown Voltage(l)
(lG2 = ±10 mAdc, VG1S = VDS = 0)
V(BR)G2S0
±6.0
-
Vdc
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(lD = 10 ).LAde, VG1S = VG2S = -4.0 Vde)
Gate 1 to Source Cutoff Voltage
(VOS = 15 Vde, VG2S = 4.0 Vde, 'D = 20 ).LAde)
MFE211
MFE212
VGlS(off)
-0.5
-0.5
-5.5
-4.0
Vdc
Gate 2 to Source Cutoff Voltage
(VDS = 15 Vde, VGlS = 0, 'D = 20 ).LAde)
MFE211
MFE212
VG2S(off)
-0.2
-0.2
-2.5
-4.0
Vde
±10
-10
mAde
).LAde
±10
-10
nAde
).LAde
mmhos
Gate 1 Leakage Current
(VGlS = ±5.0 Vde, VG2S = VOS = 0)
(VG1S = -5.0 Vde, VG2S = VDS = 0, TA = 150°C)
IG1SS
Gate 2 Leakage Current
(VG2S = ±5.0 Vde, VG1S = VDS = 0)
(VG2S = -5.0 Vde, VGlS = VDS = 0, TA = 150°C)
ON CHARACTERISTICS
IG2SS
--
Forward Transfer AdmiUanee(3)
(VDS = 15Vdc,VG2S = 4.0 Vdc, VG1S = O,f = 1.0 kHz)
IYfsl
17
40
Reverse Transfer Capacitance
(VOS = 15 Vdc, VG2S = 4.0 Vdc, ID = 10 mAde, f = 1.0 MHz)
Crss
0.005
0.05
Zero-Gate Voltage Drain Current(2)
(VOS = 15 Vde, VG1S = 0, VG2S
=
-
4.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
pF
(contInued)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-135
•
MFE211, MFE212
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
-
3.5
4.0
24
29
21
35
37
28
5.0
4.0
3.5
12
7.0
6.0
Unit
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOO = 18 Vdc, VGG
(VOO = 24 Vdc, VGG
NF
= 7.0 Vdc, f = 200 MHz)
= 6.0 Vdc, f = 45 MHz)
(Figure 1)
(Figure 2)
MFE211
MFE212
Common Source Power Gain
(VOO = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz)
(VOO = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz)
(VOO = 18 Vdc, fLO = 245 MHz, fRF = 200 MHz)
(Figure 1)
(Figure 3)
(Figure 3)
MFE211
MFE211
MFE212
Bandwidth
(VOO = 18 Vdc, VGG = 7.0 Vdc, f = 200 MHz)
(VOO = 18 Vdc, flO = 245 MHz, fRF = 200 MHz)
(VOD = 18 Vdc, VGG = 6.0 Vdc, f = 45 MHz)
(Figure 1)
(Figure 3)
(Figure 2)
MFE211
MFE212
MFE211
Gain Control Gate-Supply Voltage(4)
(VOD = 18 Vdc, dG ps = -30 dB, f
(VOD = 18 Vdc, dGos = -30 dB, f
(Figure 1)
(Figure 2)
MFE211
MFE211
dB
Gps
= 200 MHz)
= 45 MHz)
dB
Gc(5)
BW
MHz
VGG(GC)
Vdc
-
-2.0
±1.0
Notes:
1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate·voltage limiting network is
functioning properly.
2. Pulse Test: Pulse Width =' 300 /LS, Duty Cycle :s;; 2.0%.
3. This parameter must be measured with bias voltages applied for less than 5 seconds to avoid overheating. The signal is applied to gate 1 with gate 2 at
Be
ground.
4. 4G ps is defined as the change in Gps from the value at VGG = 7.0 volts (MFE211).
5. Power Gain Conversion. Amplitude at input from local oscillator is adjusted for maximum Gc .
Voo
470 pF
•
--,,
,,-------------:) (-----1,
I
:
,
10k
:,
580 k
,,
,I
I
rj
C1J...
:
I, G2
2.2jLH
i
f->,=-+---'?""'"'----.I-_O.--IOO~ TO 50 n
~LOAO
,
,,
h.0.O~1jLF
FROM 50 n ~f---<_-+..ry;".,.......---+--'.,--J f---cH'---+-........,
SOURCE
I
I
,
I
L~7::I_
I
270
I
_______ JI
l1: 3 Turns #18, 3/16" diameter aluminum slug
l2: 8 Turns #20, 3/16" diameter aluminum slug
C1, C2 & C3: leadless disc ceramic, 0.001 jLF
C4: ARCO 462, 5-80 pF, or equivalent
Figure 1. 200 MHz Power Gain, Gain Control Voltage, and Noise Figure Test Circuit for MFE211
VDO
r-----;-1
E--
,,: 470 pF
,: 8.2 M 5.6M
--,
I
I
,
I
I
10 k
I
I
FROM 50
SOURCE
n
(
I 15pF
22M
'
12 pF
~I---<~_._ _........_ _ _-+,...:G:.:.1.y f--4-"-t--_--,
!
,
,I,
390 k
I
:L___
Wi
C2
,
"
L ___ -r ____ J
I
jLF
: _________ _
______ 10.001
_ _________
-L
C1: leadless disc ceramic, 0.001 jLF
C2: leadless disc ceramic, 0.01 jLF
~
:
,,
T050n
LOAD
I
270
II
,,
________ ...1I
l1: 8 Turns #28, 5/32" diameter form, type "J" slug
L2: 9 Turns #28, 5/32" diameter form, type "J" slug
Figure 2. 46 MHz Power Gain and Noise Figure Test Circuit for MFE211
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-136
MFE211, MFE212
Voo
:----------------~Ok------I
245 MHz
= 250 mV
TO 50 0.
LOAO
~'
11
ICI
500.
lpF
200MHZ~~J.'F
l_:~_i~ _____
500.
270
27k
L1 7 Turns #34, 1/4" diameter aluminum slug
L2 5-1/2 Turns #20, 114" diameter aluminum slug
L3 7 Turns #24, 1/4" diameter air core
_________________ J
Cl: Arco type 462, 5-80 pF
C2: 0.001 J.'F lead less disc
C3: 0.01 J.'F leadless disc
T1: Pri: 25 Turns #30, close wound on 1/4"
diameter form, type "J" slug
Sec: 4 Turns #30, centered over primary
Figure 3. 200 MHz-to-45 MHz Circuit for Conversion Power Gain for MFE212
TYPICAL CHARACTERISTICS
70
VG2S ~ +4V
65
lOSS ~ 15 mA
60
« 55
/
£50
....
//
z 4s
~40
a
z
~
VGlS I
+1.5V
+I,V -
//
1///
s
0
5
r/
+O.SV-
!J
92o
6J
OV
s'
oI
5
0
70
I
65
_VDS ~ 15V
60
s_IDss~15mA
5
~ 50
;::- 4S
i:5 40
~
::> 35
u
;;:: 30
;2 25
~20
-I5
0
5
2V
V
-O.SV
6
8
10
12
14
16
VDS, DRAIN·TO·SOURCE VOLTAGE (VOLTS I
18
20
o
-1.5
VG2S~
/'
7/'
b
~~
P
:.- F-
+4V
V
+2V
.- ~
OV
.- i'='
+1
-1
-0.5
0
+0.5
VG1S, GATE-ONE-TO-SOURCE VOLTAGE (VOLTSI
Figure 5. Drain Current versus
Gate-One-to-Source Voltage
Figure 4. Drain Current versus Drain-to-Source Voltage
SMALL-SIGNAL COMMON-SOURCE PARAMETER
~ 28
26
£ 24
~ 22
E
g
lOSS ~ 15 mA
f ~ 1 kHz
20
18
~ 16
~ 14
en 12
10
o
8
,/
/'
~
/
g
~~
l' ~-1
/
/
1/
~V
---- -±:=:
---r-
::E
o
/'
8
VG1S I~ 0 V
VDS~15V
/
VG1S ~ 0.5 V
/
o
+1
+2
+3
VG2S, GATE-TWO-TO-SOURCE VOLTAGE (VOLTSI
+4
6,--VDS~15V
4f--IDss~15mA
VG2S
0
8
6
4
1
0
8
6
4
2
0
-1.5
+4V
.,/
2f--f ~ 1 kHz
/'
/
"/
/, / '
//.
11//
V// t.....
nJ/
/I)
III
,...
"'"
"'
"\.
+2V
"
"\.
"'"- r--- "
~lV
-1
-0.5
0
+0.5
VG1S, GATE-ONE-TO-SOURCE VOLTAGE (VOLTSI
-
OV-
Figure 7. Forward Transfer Admittance versus
Gate-One-to-Source Voltage
Figure 6. Forward Transfer Admittance versus
Gate-Two-to-Source Voltage
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-137
+1
•
MFE211, MFE212
TYPICAL CHARACTERISTICS (continued)
~28
-- "'.
E 26 -VOS = 15V
.§. 24 -lOSS = 15mA
~22 !-f=lkHz
~20
I:
1
~
/
L
o
./
-
....
-
5
4
'\.
--
,~ov
I
1/
+0.5V/
/"
'\.,. / '
+2V
6
r--....
/
18
~
'"... 16
hj V
~ 14
~ 12
~ ~-0.5V = VGlS = O~/
I- 10
1/ ~
7
/
r
I-"
i!l
I
s:> 4II
VG2S - +4V
~ ....
....
"
8
W U
M
10, ORAIN CURRENT (mA)
~
1
"'" +lV
...........
~
0
-5 -4
20
•
80
0
:i! 60
5i!
i'""'-- r-...
S
..........
~ 60 r---VOS = 15V
VG2S = 4 V
;:; 40
1---10 = 15rnA
~30
30°
0
20°
0
0100
-
l!l f-- ~
200
300
400 SOO
f, FREQUENCY (MHz)
E
;,
~
/
20
6"
5
~
:!i:l O~
VOS =
........ V
V
I
+20
]" 20
+10
.§.
E
~
~
'"
10~
z
20~
30
40
11~
200
t,
300
400
FREQUENCY (MHzl
500
50
WOO
~
~
15
70
90
100
300
400
t, FREQUENCY (MHzl
600
1000 120
i1!l
i 00
9
'"'---.
i-VOS = 15 V
... 10 i- VG2S = 4 V
10 = 15 mA
~
o
5
J
60
0
100
Figure 12. Small-Signal Gate-One Reverse Transfer
Admittance versus Frequency
--
f-
60S
.......... r-...
~
200
........
...... ............
..........
......-
7
60
300
400
600
60
1000
t, FREQUENCY (MHz)
Figure 13. Small-Signal Gate-One Output Admittance
versus Frequency
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-138
l!!z
80~
200
--
~
60 ~
110
25
15V
t--VG2S = 40 V
IO
St-- =ljrnA
0
100
60
~
615 '\.
0
100
+40
+30
en
I!'
~
Figure ". Small-Signal Forward Transfer Admittance
versus Frequency
0
L--
40
IYfsl
5
10°
0°
1000
~ 25
30
.......
-VOS = lSV
-VG2S = 4V
10 = 15mA
Figure 10. Small·Signal Gate·One Input Admittance
versus Frequency
.§.
+5
20
""" "
BO°
6i.
-..
+4
-..........
90°
r-- r-
-3 -2 -1
0 +1 +2
+3
VG2S, GATE·'lWO·TO·SOURCE VOLTAGE (VOLTS)
Figure 9. Input and Output Capacitanca versus
Gate-Two-to-Source Voltage
100"
-
COlI.
t = 1 MHz
2
100
~
Vos = 1SV
VGlS = OV
lOSS = lS rnA
3
'"
Figure 8, Forward Transfer Admittance versus
Drain Current
90
Ciss
MFE211, MFE212
TYPICAL CHARACTERISTICS (continued)
10
40
/"
0;-
:s
~
-10
0
/
I
-30
~
~ -40
J
a: -50
.1
./
-80
-70
I
V
'" -20
!
7"-
30
6
0
0
Voo = laV
f = 200 MHz
CIRCUIT IN FIGURE 1
-40
-6
10
Voo = 24V
f=45MHz
CIRCUIT IN FIGURE 2
J
-30
4
2
0
2
4
6
a
VGG(GC). GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
-4
-2
0
2
4
6
a
VGG(GC). GAIN CONTROL GATE SUPPlY VOLTAGE (VOLTS)
10
Rgure 15. Small-Signal Common-Source Insertion
Power Gain versus Gain Control Gate Supply Voltage
Figure 14. Relative Small-Signal Power Gain versus
Gain Control Gate Supply Voltage
MFE211
10
VOO=1av
f = 200 MHz
CIRCUIT IN FIGURE 1
/
0
/
•
0
9
a
-
7
6
5
\.
.......
o
-2
o
- 1
0
1
2
3
4
5
6
7
VGG(GC). GAIN CONTROL GATE SUPPLY VOLTAGE (VOLTS)
10
Figure 16. Common Source Spot Noise Figure versus
Gain Control Gate Supply Voltage
20
30
V
50
100
200
f. FREQUENCY (MHz)
7
iJ'
300 400
Rgure 17. Optimum Spot Noise Rgure
versus Frequency
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-139
1000
MFE823
CASE 22-03, STYLE 11
TO-18 (TO-206AA)
!
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Drain-Gate Voltage
VOG
±10
Vdc
Drain Current
10
30
mAde
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
300
1.71
mW
mWI'C
TJ, Tstg
-65to +175
'C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
ROJA
584
'CIW
Thermal Resistance, Junction to Case
ROJC
250
'CIW
Operating and Storage Junction
Temperature Range
lOrain
:~~
~
3 21
3 Source
MOSFET
THERMAL CHARACTERISTICS
Characteristic
P-CHANNEL -
ENHANCEMENT
Refsr to 2N4352 for graphs.
•
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)OSX
-25
-
Vdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(10 = -10 pAde, VGS = 0 Vdc)
Zero-Gate-Voltage Drain Current
(VOS = -10 Vdc, VGS = 0)
lOSS
-
-20
nAdc
Gate Reverse Current
(VGS = -10 Vdc, VOS
IGSS
-
1.0
pAdc
-6.0
Vdc
= 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VOS = -10 Vdc, 10 = -10 pAdc)
On-5tate Drain Current
(VOS = -10 Vdc, VGS
=
VGS(Th)
-2.0
10(on)
-3.0
-
mAde
IYfsl
1000
-
,.mhos
-10 Vdc)
SMALL-5IGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = -10 Vdc, 10 = -2.0 mAdc, f
=
1.0 kHz)
Input CapaCitance
(VOS >= -10 Vdc, VGS
-10 Vdc, f
=
1.0 MHz)
Reverse Transfer Capacitance
(VOS = -10 Vdc, VGS = -10 Vdc, f
=
1.0 MHz)
=
Ciss
Crss
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-140
6.0
pF
1.5
pF
MFE825
CASE 22·03, STYLE 2
TO·18 (TO·206AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
20
Vdc
Gate-Source Voltage
VGS
30
Vdc
Drain Current
10
25
mA
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Po
200
1.6
mW
mWI"C
Junction Temperature Range
TJ
150
TJ, Tstg
-65 to +150
'c
'c
Operating and Storage Junction
Temperature Range
MOSFET
N-CHANNEL -
DEPLETION
Refer to 2N3796 for graphs.
ELECTRICAL CHARACTERISTICS
(TA = 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)DSX
20
-
Vdc
Gate Reverse Current
(VGS = -10 V, VDS = 0 V)
IGSS
-
-1.0
pA
Gate Source Voltage
(10 = 1.0 pA, VDS = 2.0 V)
VGS
0
-2.0
Vdc
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(10 = 1.0 pA, VGS = -8.0 V)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VDS = 10 V, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 10 V, VGS = 0, f = 1.0 kHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-141
•
MFE910
MPF910
CASE 79-04, STYLE 6
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
Unit
VOS
so
Vdc
VGS
:t15
Vdc
10
10M
0.5
1.0
Adc
Tatal Device Dissipation @ TA = 25°C
Derate above 25°C
MPF910
Po
1.0
B.O
Watts
mWfOC
Total Device Dissipation @TC = 25°C
Derate above 25°C
MFE910
Po
S.25
50
Watts
mWrC
Gate-5ource Voltage
Drain Current -
Symbol
1 Drain
Value
Drain-Source Voltage
Continuous(l)
Pulsed(2)
Operating and Storage Junction
Temperature Range
TJ, Tstg
-55 to
+ 150
~
2~~~~~~YLE Sour,
CASE
2:
TO-92 (TO-226AE)
1
TMOS
SWITCHING
°c
23
(1) The Power DISSIpatIon of the package may result in a lower continuous drain
current.
N-CHANNEL - ENHANCEMENT
(2) Pulse Width", 300 /IS, Duty Cycle", 2.0%.
Refer to 2N6659 for additional graphs.
•
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Zero-Gate-Voltage Drain Current
(VOS = 40 V, VGS = 0)
lOSS
-
0.1
10
!LAde
Gate Reverse Current
(VGS = 10 V, VOS = 0)
IGSS
-
0.01
10
nAdc
V(BR)OSS
SO
90
-
Vdc
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 rnA)
VGS(th)
0.3
1.5
2.5
Vdc
Drain-Source On-Voltage
(VGS = 10 V, 10 = 500 rnA)
VOS(on)
-
-
2.5
Vdc
On-State Drain Current
(VOS = 25 V, VGS = 10 V)
10(on)
500
-
Forward Transconductance
(VOS = 15 V, 10 = 500 rnA)
9fs
100
-
-
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 100 !LA)
ON CHARACTERISTICS
FIGURE 1 - VGS(th) NORMALIZED venus TEMPERATURE
rnA
mmhos
FIGURE 2 - ON-REGION CHARACTERISTICS
2.0
2.0
I
-
VGS = 10V
Vos = VGS
ID=1.0mA
w1.6
~
~
91.2
~ 0.8
~
-
-- --
r-
~
-50
if
:E
o
50
100
TJ, JUNCTION TEMPERATURE
./
~ :::;.-
1.2
II!
a:
:::>
'-'
~
~~
z
~ 0.8
c
~
g
J:ii 0.4
150 ("1:)
--....
~~
:;;..-
-
::.-
~
...- ..!!!
1.0
2.0
3.0
Vos. DRAlN-TO-SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-142
-/
5
z
I-
I--
i;? 0.4
o
r--
1.6
7.0 V
6.0 V
5.0 V
4.0 V
4.0
MFE910, MPF910
FIGURE 3 - OUTPUT CHARACTERISTICS
2.0
ie
~
~ 1.2
a
~
/'
8.0 V
D
80
Eo
tl 60
rl
z
7.0V
0.8
~O.4
VGS = OV
9.0 V
,.-
<:>
c
100
VGS = 10V
1.6
'Z
FIGURE 4 - CAPACITANCE _ . DRAIN-TO-50URCE VOLTAGE
'/
'/.
~
6.0 V
«
40
u
5.0 V
20
U
4.0 V
10
20
30
VDS. DRAIN-TO·SOURCE VOLTAGE (VOLTS)
1\
.\
1\
40
~
........
~
Ciss-I
~
Coss
r--..
10
C",
20
30
40
50
VDS. DRAIN·TO·SOURCE VOLTAGE (VOLTS)
60
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-143
MFE930
MFE960
MFE990
MAXIMUM RATINGS
Rating
Symbol MFE930 MFE960 MFE990
Drain-Source Voltage
VOS
35
SO
90
Drain-Gate Voltage
VOG
35
Gate-Source Voltage
VGS
±30
SO
90
Drain Current
Continuous(l)
Pulsed(2)
10
10M
2.0
3.0
Unit
CASE 79-04, STYLE 6
TO-39 (TO-205AD)
Vdc
Vdc
,1/1 ,~~
Vdc
Adc
Total Device Dissipation
@TC = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
TJ, Tstg
Watts
6.25
50
mWrC
-55to 150
"C
TMOS
SWITCHING
(1) The Power Dissipation of the package may result in a lower continuous drain
current.
(2) Pulse Width .. 300 p.s, Duty Cycle .. 2.0%.
•
N-CHANNEL -
1 Source
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Charactaristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 10 JLA.)
Gate Reverse Current
(VGS = 15 Vdc, VOS
V(BR)OSX
IGSS
-
-
lOSS
-
VGS(Th)
1.0
MFE930
MFE9S0
MFE990
35
60
90
= 0)
Vdc
-
-
50
nAdc
-
10
JLA.dc
-
3.5
Vdc
ON CHARACTERISTICS'
Zero-Gate-Voltage Drain Current
(VOS = Maximum Rating, VGS
= 0)
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 rnA)
Drain-Source On-Voltage (VGS
(10 = 0.5 A)
=
10 V)
VOS(on)
MFE930
MFE9S0
MFE990
(10
=
1.0 A)
MFE930
MFE9S0
MFE990
(10
= 2.0 A)
MFE930
MFE9S0
MFE990
Static Drain-Source On Resistance
(VGS = 10 Vdc, 10 = 1.0 Adc)
-
rOS(on)
MFE930
MFE9S0
MFE990
On-State Drain Current
(VOS = 25 V, VGS = 10 V)
Vdc
-
10(on)
0.4
O.S
O.S
0.7
0.8
1.2
0.9
1.2
1.2
1.4
1.7
2.4
-
2.2
2.8
2.8
3.5
4.8
-
0.9
-
1.2
1.2
1.4
1.7
2.0
1.0
2.0
-
Amps
60
70
pF
13
18
pF
49
60
pF
3.0
Ohm~
SMALL-SIGNAL CHARACTERISTICS
Reverse Transfer Capacitance
(VOS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
-
Output Capacitance
(VOS = 25 V, VGS
Coss
-
Input Capacitance
(VOS = 25 V, VGS
= 0, f =
= 0, f =
Ciss
1.0 MHz)
1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-144
MFE930, MFE960, MFE990
= 25°C
ELECTRICAL CHARACTERISTICS (continued) (TA
unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
9fs
200
380
-
mmhos
Forward Transconductance
(VOS = 25 V, 10 = 0.5 A)
SWITCHING CHARACTERISTICS'
Turn-On Time (See Figure 1)
Turn-Off Time (See Figure 1)
'Pulse Test: Pulse Width", 300 /Ls, Duty Cycle'" 2.0%.
RESISTIVE SWITCHING
FIGURE 1 - SWITCHING TEST CIRCUIT
FIGURE 2 -
SWITCHING WAVEFORMS
+25 V
23
To Sampling Scope
r-20dii-1-_-G-':-='=-:l~50 VnoutInput
Input Vin
FIGURE 3 -
ON VOLTAGE
v.reue TEMPERATURE,
FIGURE 4 -
10
j1l5.0
g
--
f-VGS = 1 V
\i 2.0 ~
~
I!l 1.0
i
180
-
I----
!5
0.5
160
--
~140
~12
z
VGS
1\
Coss
\
""'- r--..............:: 100....
<5
u 60
40 "I"~ 80
!----
:!l 0.2
C,..
+5.0
25
45
65
B5
105
125
o
o
145
5.0
10
TJ, JUNCTION TEMPERATURE 1°C)
FIGURE 5 -
TRANSFER CHARACTERISTIC
1.2
g
/
0.6
if
9.0
!z
8.0
~ 1.6
az
/
~
7.0
1. 2
6.0
g 0.8
§
5.0
0.4
4.0
..,,/
1.0
2.0
3.0
4.0
5.0
6.0
7.0
50
OUTPUT CHARACTERISTIC
~ 2.0
§
0.3
40
VGS = 10 V-
/
0.9
30
2.4
/
z
~
FIGURE 8 -
/'
1.B
1.5
20
2.8
,-/
VOS = 10 V
2.1
~
a:
u
Ci s
i-.-..
VOs. ORAIN·SOURCE VOLTAGE (VOLTS)
2.4
:::>
-
0
0.1
-55 -35 -15
....$z
= 0V
o\
~ 10o
u
>
if
:0
•
CAPACITANCE VARIATION
200
8.0
9.0
10
5.0
10
20
30
40
VOS.oRAIN-SOURCE VOLTAGE (VOLTS)
VGS, GATE·SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-145
50
MFE930, MFE960, MFE990
FIGURE 7 -
SATURATION CHARACTERISTIC
2.8
VGS = 10V..-
,.,..
9.0
./
.....
·8.0
//
./
h
7.0
~
A
.....
../'
V./
~
:;...--
5.0
IY"
OJ
-
4.0
U
W
~
4~
~
VDS, DRAIN·SDURCE VDLTAGE IVOLTS)
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-146
MFE2004
thru
MFE2006
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
30
Vdc
Drain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
Forward Gate Current
IGF
10
mAde
Total Device Dissipation @ TC = 25"C
Derate above 25"C
Po
1.B
10
Watts
mWrC
Junction Temperature Range
TJ
-65to +175
"C
Storage Temperature Range
Tstg
-S5 to +200
"C
3
!
2
'~.~~"
1 Source
1
JFET
CHOPPERS
N-CHANNEL -
DEPLETION
Refer to 2N4091 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
30
-
-
-
0.2
0.4
nAdc
!lAde
-
0.2
0.4
nAdc
!lAde
1.0
2.0
5.0
S.O
B.O
10
B.O
15
30
-
-
1.0
-
0.4
0.4
0.4
-
BO
50
30
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !lAde, VOS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VOS
(VGS = 20 Vdc, VOS
= 0)
= 0, TA =
Drain Cutoff Current
(VOS = 20 Vdc, VGS
(VOS = 20 Vdc, VGS
=
=
Gate Source Voltage
(VOS = 20 Vdc, 10
50 !lAde)
=
IGSS
150"C)
10(off)
12 Vdc)
12 Vdc, TA
=
150"C)
Vdc
VGS
MFE2004
MFE2005
MFE200S
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current'
(VOS = 20 Vdc, VGS = 0)
mAde
lOSS'
MFE2004
MFE2005
MFE200S
Gate-Source Forward Voltage
(lG = 1.0 mAde, VDS = 0)
VGS(f)
Drain-Source On-Voltage
(10 = 3.0 mAde, VGS = 0)
(10 = S.O mAde, VGS = 0)
(10 = 10 mAde, VGS = 0)
VOS(on)
MFE2004
MFE2005
MFE200S
Static Drain-Source On Resistance
(10 = 1.0 mAde, VGS = 0)
rOS(on)
MFE2004
MFE2005
MFE200S
Vdc
Vdc
-
-
Ohms
SMALL-SIGNAL CHARACTERISTICS
Static Drain-Source "ON" Resistance
(VGS = 0, 10 = 0, f = 1.0 kHz)
Input Capacitance
(VOS = 0, VGS
=
-12 Vdc, f
=
rds(on)
MFE2004
MFE2005
MFE200S
Ciss
1.0 MHz)
-
-
lS
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-147
Ohms
80
50
30
pF
--
MFE2004 thru MFE2006
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Reverse Transfer Capacitance
(VOS = 0, VGS = S.O Vde, f = 1.0 MHz)
(VOS = 0, VGS = 8.0 Vde, f = 1.0 MHz)
(VOS = 0, VGS = 12 Vde, f = 1.0 MHz)
Symbol
Crss
MFE2004
MFE2005
MFE200S
Min
-
Max
Unit
pF
-
5.0
5.0
5.0
-
20
15
10
-
40
20
10
-
80
SO
40
SWITCHING CHARACTERISTICS
Turn-On Oelay TIme
(VOO = 3.0 Vde, 10 = 3.0 mAde, VGS = 0)
(VOO = 3.0 Vde, 10 = S.O mAde, VGS = 0)
(VOO = 3.0 Vde, 10 = 10 mAde, VGS = 0)
MFE2004
MFE2005
MFE200S
Rise Time
(VOO = 3.0 Vde, 10 = 3.0 mAde, VGS = 0)
(VOO = 3.0 Vde, 10 = S.O mAde, VGS = 0)
(VOO = 3.0 Vde, 10 = 10 mAde, VGS = 0)
MFE2004
MFE2005
MFE200S
Turn-Off TIme
(VOO = 3.0 Vde, 10 = 3.0 mAde, VGS(off) = S.O Vde)
(VOO = 3.0 Vde, 10 = S.O mAde, VGS(off) = 8.0 Vde)
(VOO = 3.0 Vde, 10 = 10 mAde, VGS(off) = 12 Vde)
MFE2004
MFE2005
MFE200S
ns
td(on)
ns
tr
toff
ns
'Pulse Test: Pulse Width .. 300 p.s, Outy Cycle .. 3.0%.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-148
MFE2010
thru
MFE2012
CASE 22-03, STYLE 4
TO-18 (TO-206AA)
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VDS
25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
50
mAde
Rating
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.8
10
mWrC
3
/! -.~~'"
2
1
' Source
JFET
CHOPPERS
Watt
Junction Temperature Range
TJ
-65 to + 175
°c
Storage Temperature Range
Tst!!
-65 to +200
°c
N-CHANNEL - DEPLETION
Refer to J107 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
25
-
Vdc
-
3.0
6.0
nAdc
!LAde
-
3.0
6.0
nAdc
!LAde
15
40
100
-
-
1.0
-0.5
-1.0
-3.0
-10
-10
-10
-
-
0.75
0.75
0.75
-
25
15
10
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 !LAde, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 150°C)
IGSS
Drain Cutoff Current
(VDS = 15 Vdc, VGS = 12 Vdc)
(VDS = 15 Vdc, VGS = 12 Vdc, TA = 150°C)
ID(off)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current'
(VDS = 20 Vdc, VGS = 0)
Gate-Source Forward Voltage
(lG = 1.0 mAde, VDS = 0)
Gate-Source Voltage
(VDS = 15 Vdc, ID = 1.0 !LAde)
Drain-Source On-Voltage
(lD = 8.0 mAde, VGS = 0)
(10 = 15 mAde, VGS = 0)
(lD = 30 mAde, VGS = 0)
Static Drain-Source On Resistance
(lD = 1.0 mAde, VGS = 0)
mAde
IDSS'
MFE2010
MFE2011
MFE2012
VGS(f)
Vdc
VGS
MFE2010
MFE2011
MFE2012
VDS(on)
MFE2010
MFE2011
MFE2012
rDS(on)
MFE2010
MFE2011
MFE2012
Vdc
Vdc
Ohms
SMALL-SIGNAL CHARACTERISTICS
Static Drain-Source "ON" Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
rds(on)
Input Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Ciss
-
Reverse Transler Capacitance
(VDS = 0, VGS = 12 Vdc, 1= 1.0 MHz)
erss
-
MFE2010
MFE2011
MFE2012
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-149
Ohms
25
15
10
50
pF
20
pF
MFE2010 thru MFE2012
ELECTRICAL CHARACTERISTICS (continued)
(TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Max
Unit
10
n.
6.0
n.
SWITCHING CHARACTERIS11CS
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
(VOO = 15 Vde.IO
(VOO = 15 Vde. 10
(VOO = 15 Vde.lo
= 8.0 mAde)
= 15 mAde)
= 30 mAde)
MFE2010
MFE2011
MFE2012
Fall Time
(VOO = 15 Vde. 10
NO~ = 15 Vde. 10
(VOO = 15 Vde. 10
= 8.0 mAde)
= 15 mAde)
= 30 mAde)
MFE2010
MFE2011
MFE2012
Id(off)
tf
-
'Pulse Test: Pulse Width", 300 ,.s. Duty Cycle'" 3.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-150
n.
35
20
12
ns
75
45
25
MFE9200
CASE 22-03, STYLE 12
TO-18 (TO-206AAI
!! ~..~
3D,.;n
MAXIMUM RATINGS
Rating
Orain-Source Voltage
Gate-Source Voltage
Symbol
Orain Current
Continuous (1)
Pulsed (2)
Value
Unit
VOS
200
Vdc
VGS
±20
Vdc
~
3 21
, Source
mAdc
10
10M
400
800
Po
1.8
14.4
Watts
mW/,C
TJ, Tstg
-55 to +150
'c
Total Oevice Oissipation @ TC = 25'C
Oerate above 25'C
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
TMOS
SWITCHING FET
N-CHANNEL -
ENHANCEMENT
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)OSX
200
-
-
Vdc
OFF CHARACTERISTICS
Orain-Source Breakdown Voltage
(VGS = 0,10 = 10 JLA)
Gate Reverse Current
(VGS = 15 Vdc, VOS
= 0)
IGSS
-
0.01
50
nAdc
lOSS
-
0.1
10
JLAdc
VGS(Th)
1.0
-
4.0
Vdc
ON CHARACTERISTICS'
Zero-Gate-Voltage Orain Current
(VOS = 200 V, VGS = 0)
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 rnA)
Orain-Source On-Voltage (VGS
(10 = 100 rnA)
(10 = 250 rnA)
(10 = 500 rnA)
=
10 V)
VOS(on)
Vdc
-
0.45
1.20
3.0
0.6
1.60
-
4.5
4.8
6.0
6.0
6.4
10(on)
400
700
-
rnA
Ciss
-
72
90
pF
Reverse Transfer Capacitance
(VOS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
-
-
10
pF
Output Capacitance
(VOS = 25 V, VGS
Coss
-
-
30
pF
9fs
200
400
-
Turn-On Time
See Figure 1
ton
-
6.0
15
ns
Turn-Off Time
See Figure 1
toft
-
6.0
15
ns
Static Orain-Source On Resistance
(VGS = 10 Vdc)
(10 = 100 rnA)
(10 = 250 rnA)
(10 = 500 rnA)
-
Ohms
rOS(on)
On-State Orain Current
(VOS = 25 V, VGS = 10 V)
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VOS = 25 V, VGS
= 0, f =
=
0, f
=
1.0 MHz)
1.0 MHz)
Forward Transconductance
(VOS = 25 V, 10 = 250 rnA)
mmhos
SWITCHING CHARACTERISTICS
• Pulse Test: Pulse Width", 300 1'1', Outy Cycle", 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-151
•
MFE9200
RESISTIVE SWITCHING
RGURE 1 - SWITCHING TEST CIRCUIT
FIGURE 2 - SWITCHING WAVEFORMS
+25V
23
To Sampling Scope
n Input
r-2iidB-l-_-if'==-=~50Vou
t
Input Vin
RGURE 4 - CAPACITANCE VARIATION
RGURE 3 - ON VOLTAGE versus TEMPERATURE
•
10
200
~
~ 5.0
w
'"~
g
VGS - 10 V
2.0
i--
~ 1.0
:::>
~~
250 mA
-
-l-
100 mA
0.5
I--
f--
c
180
VGS
160
~ 140
~
z
120
~100
~ 80 \\'
<360
\
1\ "'\..
40
$ 0,2
20
0.1
-55
-35 -15
+5.0
25
45
65
85
105
125
o
o
145
10
FIGURE 5 - TRANSFER CHARACTERISTIC
~ O. 6
~ o. 5
a o.4
~
c
Ui
~
J
I-
;z
10/
O.6
V
VGS = 10 V
~
/
o.3
go. 2
O. 1
i
/
a
1.0
2.0
3.0
~
40
50
V
5.0 v-
O.5
/
r/
//
o.4
o. 3
1//
4.011'
~c o.2 f
1/
l V
II
10.
./
0
Co..
I/
S
l-
/
£>
30
'--
RGURE 6 - OUTPUT CHARACTERISTIC
o. 7
I
o. 7
20
Ciss
VDS, DRAIN·SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (OC)
O.8
= 0V
3.0V
".....
4.0
5.0
6.0
7.0
8.0
9.0
10
2.0
VGS, GATE-50URCE VOLTAGE (VOLTS)
4.0
6.0
8.0
10
12
14
VDS. DRAIN·SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-152
16
18
20
MFE9200
FIGURE 7 - SATURATION CHARACTERISTIC
0.7
~
::;;
o.6
:5. O. 5
t;:
a~
~
0.4
.6
0.3
g 0.2
:§
o.1
V
,
. / .........
-
....
.......:: :.-
.-
-
1~
..-
5.0 V
4.0 V
V
3.0 V
"...
U
M
~
~
~
Ves, DIlAIN·seURCE VOLTAGE (VOLTS)
..
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-153
QUAD DUAL-IN-LiNE
N-CHANNEL ENHANCEMENT MODE SILICON GATE
TMOS FIELD EFFECT TRANSISTORS
MFQI000C,P
These TMOS Power FETs are designed for high current, high speed power
switching applications such as switching power supplies, CMOS logic,
microprocessor or TIL-to-high current interface and line drivers.
• Fast Switching Speed -
ton = toff = 10 ns Max
2.5 V Max
• Low Drive Requirement, VGS(th) =
• Inherent Current Sharing Capability Permits Easy Paralleling
of Many Devices
MFQ1000C
_
CASE 632-0B, STYLE 2
MFQ1000P
.-,
CASE 646-06, STYLE 2 1~'m ¥¥~ ~
• Plastic and Ceramic Packages
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Orain-Source Voltage
VOSS
60
Vdc
Orain-Gate Voltage
VOGO
60
Vdc
Forward Gate-Source
Voltage
VGSF
15
Vdc
Reverse Gate-Source
Voltage
VGSR
0.3
Vdc
D
1234567
Orain Current
- Continuous
- Pulsed
•
1
QUAD
DUAL-IN-LiNE TMOS
Adc
Orain-Source Oiode Current
- Continuous
- Pulsed
10
10M
0.3
1.0
lOS
10MS
0.5
1.0
ENHANCEMENT
Amps
All Four
Each
Transistor
p
C
Total Oevice Oissipation
@TA ~ 25°C
Oerate above 25°C
Po
Total Power Oissipation
Po
@TC~25°C
Derate above 25°C
Operating and Storage
Temperature Range
N-CHANNEL -
Transistors
C
P
1.0
8.0
0.5
4.0
2.0
16
1.2
9.6
mWrC
Watts
2.0
16
1.0
8.0
4.0
32
3.0
23
mWrC
Watts
-40 to +125
TJ, Tstg
°c
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted)
Characteristic
I
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
~
Orain-Source Breakdown Voltage (VGS
~
Gate·Body Leakage Current (VGS
~
0, 10
~
60
-
-
0)
lOSS
-
-
10
p.Adc
0)
IGSS
-
-
100
nAdc
VGS(th)
-
-
2.5
Vdc
-
1.5
1.65
Vdc
rOS(on)
-
Ohms
0.2
0.5
100
-
Amps
9ls
-
5.5
10(on)
Ciss
-
48
-
pF
100 p.A)
40, VGS
~
10 Vdc, VOS
~
Zero Gate Voltage Orain Current (VOS
V(BR)OSS
Vdc
ON CHARACTERISTICS
~
Gate Threshold Voltage (VOS
~
VGS, 10
Orain·Source On-Voltage (Note 1) (VGS
(VGS
Static Orain-Source On-Resistance (VGS
On·State Orain Current (Note 1) (VOS
(VOS
~
~
~
~
1.0 mAl
5.0 V, 10 ~ 0.3 A)
10 V, 10 ~ 0.5 A)
~
~
Forward Transconductance (Note 1) (VOS
~
10 Vdc, 10
25 V, VGS
25 V, VGS
~
300 mAl
5.0 V)
10 V)
~
15 V, 10
VOS(on)
~
0.5 A)
mfi
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 2) (VOS
~
25 V, I
~
~
1.0 MHz)
25 V, f
~
1.0 MHz)
Reverse Transler Capacitance (Note 2) (VOS
~
25 V, I
Output Capacitance (Note 2) (VOS
~
Coss
1.0 MHz)
Crss
16
2.0
SWITCHING CHARACTERISTICS
Turn-On Time (Note 2)
(10 ~ 0.3 A, RL ~ 23 fi,
RS
Turn-Off Time (Note 2)
NOTES: 1. Pulse Test -
80
JA,S
~
50!l)
pulse, % duty cycle.
2. Sample Test.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-154
pF
pF
QUAD DUAL-IN-LiNE
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
MFQ5460P
· .. depletion mode (Type A) junction field-effect transistors designed for
use in general-purpose amplifier applications.
• High Gate-Source Breakdown Voltage v(BR)GSS = 40 Vdc (Min)
• Low Noise Figure -
=
NF
CASE 646-06, STYLE 5
1.0 dB (Typ) @ f
=
100 Hz
• Low Reverse Transfer Capacitance -Cr•• = 2.0 pF (Max)
• Refer to 2N5460 Data Sheet for Performance Graphs
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VOS
40
Vdc
Orain-Gate Voltage
VOG
40
Vdc
Reverse Gate-Source Voltage
VGSR
40
Vdc
10
20
mAde
IGF
10
mAde
Orain-Source Voltage
Orain Current
Forward Gate Current
Each
Total
Transistor
Device
0.5
2.86
1.5
8.58
-~
1234567
QUAD
DUAL-IN-LiNE
JFETs
Po
Total Oevice Oissipation
@TA = 25'C
Oerate above 25'C
P-CHANNEL - DEPLETION
Watts
mWfC
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise notedl
I
Characteristic
Symbol
Min
V(BR)GSS
40
VGS(off)
0.75
Typ
Max
Unit
-
-
Vde
-
6.0
Vdc
-
-
-
5.0
1.0
nAdc
!JAde
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 !JAde, VOS
=
0)
Gate-Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 1.0 "Adc)
Gate Reverse Cu rrent
(VGS = 20 Vdc, VOS = 0)
(VGS = 20 Vdc, VOS = 0, TA = 100'C)
IGSS
-
ON CHARACTERISTICS
Zero-Gate Voltage Orain Current
(VOS = 15 Vdc, VGS = 0)
lOSS
1.0
-
5.0
mAde
Gate-Source Voltage
(VOS = 15 Vdc, 10 = 0.1 mAde)
VGS
0.5
-
4.0
Vde
Forward Transadmittance
(VOS = 15 Vde, VGS = 0, f = 1.0 kHz)
IVfsl
1000
-
4000
"mhos
Output Admittance
(VOS = 15 Vdc, VGS
IVosl
-
-
75
= 0, f
"mhos
Input Capacitance
(VOS = 15 Vdc, VGS
Ciss
-
5.0
7.0
pF
= 0, f =
Crss
-
1.0
2.0
pF
NF
-
1.0
-
dB
en
-
60
-
nV/v'RZ
SMALL-SIGNAL CHARACTERISTICS
Reverse Transfer Capacitance
(VOS = 15 Vde, VGS = 0, f
= 1.0 kHz)
=
Common-Source Noise Figure
(VOS = 15 Vdc, VGS = 0, RG
1.0 MHz)
1.0 MHz)
=
1.0 MG, f
=
100 Hz, BW = 1.0 Hz)
Equivalent Short-Circuit Input Noise Voltage
(VOS = 15 Vdc, VGS = 0, f = 100 Hz, BW
=
1.0 Hz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-155
•
QUAD DUAL-IN-LiNE
N-CHANNEL ENHANCEMENT MODE SILICON GATE
TMOS FIELD EFFECT TRANSISTORS
MFQ6660C,P
These TMOS Power FETs are designed for high current, high speed power
switching applications such as switching power supplies, CMOS logic,
microprocessor or TTL-to-high current interface and line drivers.
ton =. toft = 5.0 ns Max
• Fast Switching Speed • Low On-Resistance -
MFQ6660P
_
CASE 646-06, STYLE 2
• Plastic and Ceramic Packages
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOSS
60
Vdc
Drain-Gate Voltage
VDGO
60
Vdc
Vdc
Gate-Source Voltage
VGS
±30
Drain Current
- Continuous (Note 1)
- Pulsed (Note 2)
10
10M
2.0
3.0
D'"
124567
QUAD
DUAL-IN-LiNE TMOS
Adc
Po
Total Power Dissipation
Po
C
p
C
P
1.0
B.O
0.5
4.0
2.0
16
1.2
9.6
Watts
mWrC
2.0
16
1.0
B.O
4.0
32
3.0
23
mWrC
@TC~25°C
Derate above 25°C
Operating and Storage
Temperature Range
ENHANCEMENT
Watts
-50to+150
TJ, Tstg
N-CHANNEL -
All Four
Transistors
Each
Transistor
Total Device Dissipation
@TA ~ 25°C
Derate above 25°C
1
3.0 Ohms Max
• Low Drive Requirement, VGS(th) = 2.0 V Max
• Inherent Current Sharing Capability Permits Easy Paralleling of Many
Devices
•
MFQ6660C
CASE 632.08, STYLE 2
°c
NOTES: (1) The Power Dissipation of the package may result in a lower continuous drain current.
(21 Pulse Width", 300 /LB, Duty Cycle" 2.0%.
ELECTRICAL CHARACTERISTICS ITA ~ 25°C unless otherwise noted)
Characteristic
I
Symbol
Min
Typ
60
Max
Unit
OFF CHARACTERISTICS
-
-
-
lOSS
10
pAdc
IGSS
-
-
100
nAdc
Gate Threshold Voltage (10 ~ 1.0 mA, VOS ~ VGS)
VGS(thl
-
-
2.0
Vdc
0.3 A, VGS = 5.0 V)
1.0A.VGS ~ 10V)
VOS(on)
-
0.9
1.5
3.0
Vdc
3.0
Ohms
~
Drain-Source Breakdown Voltage (VGS
Zero Gate Voltage Drain Current (VDS
~
0, 10
~
10 pAl
V(BR)DSS
~
Maximum Rating, VGS
0)
Gate-Body Leakage Current (VGS ~ 15 Vdc, VDS ~ 0)
Vdc
ON CHARACTERISTICS (See Note)
Orain-Source On-Voltage (10
(10
~
~
Static Orain-Source On-Resistance (VGS ~ 10 Vdc, 10 ~ 1.0 Adc)
On-State Drain Current (VOS ~ 25 V, VGS ~ 10 V)
Forward Transconductance (VOS ~ 25 V, 10 ~ 0.5 A)
-
-
10(on)
1.0
2.0
-
Amps
gts
170
-
-
mmhos
Ciss
-
30
50
pF
Coss
20
40
pF
Crss
-
3.6
10
pF
rOS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance (VOS
~
25 V, VGS
~
0, t
~
1.0 MHzl
Output Capacitance (VOS ~ 25 V, VGS ~ 0, t ~ 1.0 MHz)
Reverse Transler Capacitance (VDS
~
25 V, VGS
~
0, I
~
1.0 MHz)
SWITCHING CHARACTERISTICS (See Note)
Turn-On Time (See Figure 1)
Turn-Off Time (See Figure 1)
NOTE: Pulse Test -
Pulse Width",. 300 J.LS, Duty Cycle :s;; 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-156
MFQ6660C, P
RESISTIVE SWITCHING
FIGURE 1 - SWITCHING TEST CIRCUIT
FIGURE 2 - SWITCHING WAVEFORMS
.E1='-20d-S
+25V
To Sampling
Scope
23
Pulse Generator
fa
Vin
~----J-e:---"}f~O~PF
Ii- - - i
I
I.n.
I-
-
50
50
-----,.r-...,~~:..:::..:::..::'}:r..
50
---'~ ~
n Attenuator
1.0 M
L... _ _ _ .J
-=-
~
n Input
Vout
Output Vout
Inverted
-=-=-=
Input Vin
•
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
4·157
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDSS
60
Vdc
Drain-Gate Voltage
VDGS
60
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current - Continuous
Pulsed
10
10M
0.5
0.8
Adc
MMBF170L
CASE 318-03, STYLE 21
SOT-23 (TO-236AB)
Drain
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Po
225
mW
1.8
mW/"C
R8JA
556
"CIW
Po
300
mW
2.4
mW/"C
R8JA
417
"CIW
TJ, Tsto
-55 to +150
"C
Total Device Dissipation FR-5 Board,"
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
. Total Device Dissipation
Alumina Substrate,"" TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Unit
TMOS FET
TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.062 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
I MMBF170L
•
I
= 6Z
ELECTRICAL CHARACTERISTICS (TC = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
VGS(th)
0.8
3.0
Vdc
rDS(on)
-
5.0
Ohm
IDloff)
-
0.5
pA
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0,10 = 100 pA)
Gate-Body Leakage Current. Forward (VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS'
Gate Threshold Voltage (VDS
=
= 1.0 mAl
= 10 Vdc, 10 = 200 mAl
= 25 V, VGS = 0)
VGS, 10
Static Drain-Source On-Resistance (VGS
On-State Drain Current (VDS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 V, VGS
= 0 V, f =
1.0 MHz)
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
(VDD
=
25 V, 10
=
Turn-Off Delay Time
500 mA. Rgen
Figure 1
= 50 Ohms)
"Pulse Test: Pulse Width", 300 I's, Duty Cycle'" 2.0%.
+25V
SWITCHING WAVEFORM
125 fi
TO SAMPLING
SCOPE
50 fi INPUT
Figure 1. Switching Test Circuit
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-158
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOS
30
Vdc
Drain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
Forward Gate Current
IG(I)
50
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWfC
ReJA
556
'CIW
Po
300
mW
2.4
mWfC
ReJA
417
'CIW
TJ, TstQ
-55 to +150
'C
MMBF4391L
thru
MMBF4393L
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA ~ 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25'C
~
CASE 318-03. STYLE 10
SOT-23 (TO-236AB)
2 Source
,~' ,~~
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
1 Drain
JFET
SWITCHING TRANSISTORS
'FR-5 ~ 1.0 x 0.75 x 0.062 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
N-CHANNEL
I MMBF4391L ~ 6J; MMBF4392L ~ 6K; MMBF4393L ~ 6G
ELECTRICAL CHARACTERISTICS (TA ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
30
-
Vdc
-
1.0
0.20
nAde
pAdc
-4.0
-2.0
-0.5
-10
-5.0
-3.0
50
25
5.0
150
75
30
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ 1.0 pAde, VOS ~ 0)
Gate Reverse Current
(VGS ~ 15 Vde, VOS
(VGS ~ 15 Vde, VOS
IGSS
~
~
0, TA
0, TA
~
~
25'C)
100'C)
Gate Source Cutoff Voltage
(VOS ~ 15 Vdc, 10 ~ 10 nAdc)
Vdc
VGS(off)
MMBF4391L
MMBF4392L
MMBF4393L
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VOS ~ 15 V, VGS ~ 0)
mAde
lOSS
MMBF4391L
MMBF4392L
MMBF4393L
Drain Current
(VOS ~ 15 Vde, VGS ~ 12 Vdc)
(VOS ~ 15, VGS ~ 12 Vde, TA ~ 100'C)
Drain-Source On-Voltage
(10 ~ 12 mAde, VGS ~ 0)
(10 ~ 6.0 mAde, VGS ~ 0)
(10 ~ 3.0 mAde, VGS ~ 0)
10
-
30
60
100
Ciss
-
14
pF
Crss
-
3.5
pF
VOS(on)
MMBF4391L
MMBF4392L
MMBF4393L
Static Drain-Source On Resistance
(10 ~ 1.0 mAde, VGS ~ 0)
rOS(on)
MMBF4391L
MMBF4392L
MMBF4393L
1.0
1.0
nAdc
pAdc
Vdc
0.4
0.4
0.4
Ohms
SMALL-8IGNAL CHARACTERISTICS
Input Capacitance
(VOS ~ 15 Vdc, VGS
~
0, f
~
1.0 MHz)
Reverse Transfer Capacitance
(VOS = 0, VGS ~ 12 Vdc, f = 1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-159
•
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
30
Vdc
Drain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
IG
10
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
R8JA
556
"C/W
Po
300
mW
2.4
mWI"C
R8JA
417
"C/W
TJ, Tsta
-55 to +150
"C
Rating
Gate Current
MMBF4416L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25"C
2 Source
,~' ,~~
1 Drain
25°C
=
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5 = 1.0 x 0.75 x 0.062 m.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
JFET
VHF/UHF AMPLIFIER TRANSISTOR
N-CHANNEL
DEVICE MARKING
I MMBF4416L
= 6A
ELECTRICAL CHARACTERISTICS (TA
•
=
25"C unless otherwise noted.)
Charactaristic
Symbol
Min
Max
Unit
V(BR)GSS
30
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 pAdc, VOS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VOS = 0)
(VGS = 20 Vdc, VOS = 0, TA = 150"C)
IGSS
Gate Source Cutoff Voltage
(10 = 1.0 nAdc, VOS = 15 Vdc)
VGS(off)
-
Gate Source Voltage
(10 = 0.5 mAde, VOS = 15 Vdc)
VGS
-1.0
-5.5
Vdc
Zero-Gate-Voltage Drain
(VGS = 15 Vdc, VGS = 0)
lOSS
5.0
15
pAdc
Gate-Source Forward Voltage
(lG = 1.0 mAde, VOS = 0)
VGS(I)
-
1.0
Vdc
1.0
200
nAdc
nAdc
-6.0
Vdc
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance
(VOS = 15 Vdc, VGS = 0, I = 1.0 kHz)
IVlsl
4500
7500
I£mhos
Output Admittance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)
IYosl
-
50
I£mhos
Input Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Ciss
4.0
pF
Reverse Transfer Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Crss
-
0.8
pF
Output Capacitance
(VOS = 15Vdc,VGS = 0,1 = 1.0 MHz)
Coss
-
2.0
pF
-
2.0
4.0
18
10
-
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vdc, 10 = 5.0 mAde, Rg = 1000 n, f = 100 MHz)
(VOS = 15 Vdc, 10 = 5.0 mAde, Ra = 1000 n, 1= 400 MHz)
NF
Common Source Power Gain
(VOS = 15 Vdc, 10 = 5.0 mAde, f = 100 MHz)
(VOS = 15 Vdc, 10 = 5.0 mAde, I = 400 MHz)
Gps
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-160
dB
dB
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
30
Vdc
Drain-Gate Voltage
VDG
30
Vdc
VGSlr)
30
Vdc
IGII)
50
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
ROJA
556
°CIW
PD
300
mW
2.4
mWrC
ROJA
417
°CIW
TJ, Tsto
-55 to +150
°C
Reverse Gate-Source Voltage
Forward Gate Current
MMBF4860L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
~
2 Source
,~' ,~-@
1 Drain
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
JFET
SWITCHING TRANSISTOR
'FR-5 ~ 1.0 x 0.75 x 0.062 m.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBF4860L
~
6F
ELECTRICAL CHARACTERISTICS ITA
~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
VIBR)GSS
30
-
Vdc
-
0.5
2.0
nAdc
!---T"'r--.....--'th
'd(on) - - I
f- -l
I-i- ----1
tr~
TEST CIRCUIT
200 ns
I
INPUT
----
VGS(off)
loff I -
I--l--- Id(off)
:-tf
¥"=---.
:_ I -:
I
I
I
I
I
I
I
VOLTAGE WAVEFORMS
NOTES: 1. The input waveforms are supplied by a generator with the following characteristics:
.lout = 50 ohms, Duty Cycle'" 2.0%
2. Waveforms are monitored on an oscilloscope with the following characteristics:
tr ,e;;
0.75 ns, Rin ~ 1.0 megohm, Cjn os; 2.5 pF.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-162
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
VGS(r)
25
Vdc
IG
10
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
ROJA
556
°CIW
PD
300
mW
2.4
mWrC
ROJA
417
°CIW
TJ, Tsto
-55to +150
°C
Reverse Gate-Source Voltage
Gate Current
MMBF5457L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
= 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Source
,~' ~-@
1 Drain
JFET
GENERAL PURPOSE TRANSISTOR
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBF5457L
= 6D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
25
Typ
Max
Unit
-
-
Vdc
-
-
1.0
200
VGS(off)
0.5
-
-6.0
Vdc
VGS
-
-2.5
-
Vdc
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
IYfsl
1000
-
5000
/kmhos
Reverse Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f
IVrsl
10
50
/kmhos
4.5
7.0
pF
1.5
3.0
pF
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 !LAde, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS
(VGS = 15 Vdc, VDS
IGSS
= 0)
= 0, TA =
100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Source Voltage
(VDS = 15 Vdc, ID
=
100 !LAde)
nAdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain(1)
(VDS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
NDS = 15 Vdc, VGS
=
Ciss
= 0, f =
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f
1.0 MHz)
Crss
=
-
1.0 kHz)
1.0 MHz)
-
(1) Pulse test: Pulse Width", 630 ms; Duty Cycle'" 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-163
•
MAXIMUM RATINGS
Rating
Orain-Gate Voltage
Reverse Gate-Source Voltage
Symbol
Value
Unit
VOG
25
Vdc
VGs(r)
-25
Vdc
IG
10
mAde
Gate Current
MMBF5459L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI'C
R9JA
556
'CIW
Po
300
mW
2.4
mWI'C
R9JA
417
'CIW
TJ, Tsta
-55to +150
'C
Total Oevice Oissipation FR-5 Board"
TA = 25'C
Oerate above 25'C
Thermal Resistance Junction to Ambient
2 Source
Total Oevice ~issipation
Alumina Substrate, ** T A = 25°C
Oerate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
,~' ,~-@
1 Drain
JFET
TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.062 In.
'"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBF5459L = 6L
ELECTRICAL CHARACTERISTICS (TA
•
= 25'C unless otherwise noted.)
Symbol
Min
Max
Unit
V(BR)GSS
25
-
Vdc
Gate 1 Leakage Cu rrent
(VGS = -15 V, VOS = 0)
IG1SS
-
1.0
nA
Gate 2 Leakage Current
(VGS = -15 V, VOS = 0, TA = 100'C)
IG2SS
-
200
nA
VGS(off)
-2.0
-8.0
Vdc
Forward Transfer Admittance
(VOS = 15 V, VGS = 0, 1= 1.0 kHz)
IVlsl
2000
6000
I'mhos
Output Admittance
(VOS = 15 V, VGS = 0, 1= 1.0 kHz)
IVosl
-
50
I'mhos
Input Capacitance
(VOS = 15 V, VGS = 0, 1= 1.0 MHz)
Ciss
-
7.0
pF
Reverse Transler Capacitance
(VOS = 15 V, VGS = 0, 1= 1.0 MHz)
Crss
-
3.0
pF
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -10 /lA, VOS = 0)
Gate Source Cutoff Voltage
(VOS = 15 V, 10 = 10 nA)
ON CHARACTERISTICS
Zero-Gate-Voltage Orain
(VOS = 15 V, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-164
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Gate Voltage
VDG
40
Vdc
Reverse Gate-Source Voltage
VGSR
40
Vdc
IGF
10
mAde
Forward Gate Current
MMBF5460L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ROJA
556
°CIW
Po
300
mW
2.4
mWrC
R8JA
417
°CIW
TJ, Tsta
-55 to +150
"C
Total Device Dissipation FR-5 Board,"
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2 Source
,~' "~~
1 Dram
JFET
GENERAL PURPOSE
TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.062 In.
>'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
P-CHANNEL
MMBF5460L = 6E
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
40
-
-
-
-
5.0
1.0
nAdc
/'Adc
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 /'Adc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vde, VDS
(VGS = 20 Vde, VDS
= 0)
= 0, TA =
IGSS
100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, 10 = 1.0 /'Ade)
6.0
Vde
0.5
-
4.0
Vdc
IYfsl
1000
-
4000
Io'mhos
IVosl
-
-
75
Io'mhos
Cisa
-
5.0
7.0
pF
1.0
2.0
pF
20
-
VGS(off)
0.75
VGS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance
(VDS = 15 Vdc, VGS
= 0, f =
1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS
= 0, f =
1.0 MHz)
Gate Source Voltage
(VDS = 15 Vdc, 10
= 0.1
Vde
mAde)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VDS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 15 Vde, VGS = 0, f
Crss
=
1.0 MHz)
Equivalent Short-Circuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, RG = 1.0 MO,
f = 100 Hz, BW = 1.0 Hz)
en
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-165
nV/V'Fii
•
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
Symbol
Value
Unit
VDG
25
Vdc
VGS(r)
25
Vdc
IG(f)
10
mAde
200
2.8
mW
mW/"C
-65 to +150
'c
Continuous Device Dissipation at or Below
TC = 25'C
Linear Derating Factor
Storage Channel Temperature Range
MMBF5484L
PD
Tstg
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
2 Source
,~' ,~~
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
mW
1.8
mW/"C
R9JA
556
'CIW
PD
300
mW
2.4
mW/"C
JFET
TRANSISTOR
R9JA
417
'CIW
N-CHANNEL
TJ, Tstg
-55to +150
'c
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
1 Drain
*FR-5 = 1.0 x 0.75 x 0.062 In.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
•
MMBF5484L = 6B
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-25
-
Vdc
-1.0
-0.2
nA
pA
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 pA, VDS = 0)
Gate Reverse Current
(VGS = -20 V, VDS
(VGS = -20 V, VDS
IGSS
= 0)
= 0, TA =
-
-
100'C)
VGS(off)
-0.3
-3.0
Vdc
Forward Transfer Admittance
(VDS = 15 V, VGS = 0, f = 1.0 kHz)
IYtsl
3000
6000
~mhos
Output Admittance
(VOS = 15 V, VGS
IVosl
-
50
~mhos
= 0, f =
1.0 kHz)
Input Capacitance
(VDS = 15 V, VGS
Ciss
-
5.0
pF
= 0, f =
1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 V, VGS = 0, f = 1.0 MHz)
Crss
-
1.0
pF
Output Capacitance
(VDS = 15 V, VGS
Coss
-
2.0
pF
-
3.0
-
2.5
16
25
Gate Source Cutoff Voltage
(VDS = 15 V, ID = 10 nA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VDS = 15 V, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
= 0, f =
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 V, 10 = 1.0 rnA. YG' = 1.0 mmhos)
(RG = 1.0 kO, f = 100 MHz)
(VDS = 15 V, VGS = 0, YG' = 1.0 ~mho)
(RG = 1.0 MO, f = 1.0 kHz)
NF
Common Source Power Gain
(VDS = 15 Vdc, ID = 1.0 mAde, f
G ps
=
dB
100 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-166
dB
MAXIMUM RATINGS
Rating
Orain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
Symbol
Value
Unit
VOG
25
Vdc
VGS(r)
25
Vdc
IG(I)
10
mAde
MMBF5486L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Ambient
Max
Po
225
mW
1.8
mWrC
RfiJA
556
0c/w
Po
300
mW
2.4
mWrC
R6JA
417
0c/w
TJ, Tst!!
-55to +150
°c
Total Oevice Oissipation
Alumina Substrate," TA = 25°C
Oerate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Unit
Symbol
Total Oevice ~issipation FR-5 Board,'
TA = 25°C
Oerate above 25°C
2 Source
,~' ,~()
1 Drain
JFET
TRANSISTOR
"FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
N-CHANNEL
DEVICE MARKING
MMBF5486L = 6H
ELECTRICAL CHARACTERISTICS
(TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-25
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(VOS = O,IG = -1.0 iJA)
Gate 1 Leakage Current
(VGS = -20 V, VOS = 0)
Gate 2 Leakage Current
(VGS = -20 V, VOS = 0, TA
=
IGISS
-
-1.0
nA
IG2SS
-
-0.2
iJA
100°C)
Gate Source Cutoff Voltage
(VOS = 15 V, 10 = 10 nA)
VGS(off)
-2.0
-6.0
Vdc
IVfsl
4000
8000
I'mhos
1000
I'mhos
ON CHARACTERISTICS
Zero-Gate-Voltage Orain
(VGS = 0, VOS = 15 V)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VGS = 0, VOS = 15 V, f = 1.0 kHz)
Input Admittance
(VGS = 0, VOS
Re(Vis)
=
15 V, f
Output Admittance
(VGS = 0, VOS = 15 V, f
=
Output Conductance
(VGS = 0, VOS = 15 V, f
= 400 MHz)
Forward Transconductance
(VGS = 0, VOS = 15 V, f
= 400 MHz)
Input Capacitance
(VGS = 0, VOS
=
=
15 V, f
-
= 400 MHz)
75
I'mhos
Re(vos)
-
100
I'mhos
Re(Vfs)
3500
-
I'mhos
5.0
pF
1.0
pF
2.0
pF
IVosl
1.0 kHz)
Ciss
1.0 MHz)
Reverse Transfer Capacitance
(VGS = 0, VOS = 15 V, f = 1.0 MHz)
Crss
Output Capacitance
(VGS = 0, VOS = 15 V, f
Coss
=
-
1.0 MHzl
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 V,IO = 4.0 mA. f = 100 MHz, YG = 1.0 I'mhos)
(VOS = 15 V,IO = 4.0 mA, RG = 1.0 kil, f = 400 MHz, YG = 1.0 I'mhos)
(VGS = 0, VOS = 15 V, RG = 1.0 mil, f = 1.0 kHz, YG = 1.0 I'mhos)
NF
Common Source Power Gain
(VOS = 15 V,IO = 4.0 mA, f
(VOS = 15 V, 10 = 4.0 mA, f
Gps
= 100 MHz)
= 400 MHz)
dB
-
-
2.0
4.0
2.5
18
10
30
20
dB
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-167
•
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
IG
10
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
RflJA
417
°CIW
TJ, Tsta
-55 to +150
°C
Rating
Gate Current
MMBFJ310L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device ~issipation
Alumina Substrate,"* TA = 25°C
Derate above 25°C
2 Source
,~' ,~-@
1 Drain
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
JFET
VHF/UHF AMPLIFIER
*FR-5 = 1.0 x 0.75 x 0.062 on.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
TRANSISTOR
N-CHANNEL
DEVICE MARKING
MMBFJ310L = 6T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
•
Characteristic
Symbol
Min
V(BR)GSS
-25
-
-
-
-1.0
-1.0
nAdc
/'Adc
Typ
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 /'Adc, VOS = 0)
Gate Reverse Current
(VGS = -15V)
(VGS = -15V, TA
IGSS
=
125°C)
-
Vdc
VGS(off)
-2.0
-
-6.5
Vdc
Zero-Gate-Voltage Drain
(VOS = 10 Vdc, VGS = 0)
lOSS
24
-
60
mAdc
Gate-Source Forward Voltage
(lG = 1.0 mAdc, VOS = 0)
VGS(f)
-
-
1.0
Vdc
IYfsl
B.O
-
18
mmhos
IYosl
-
-
250
,.mhos
Ciss
-
-
5.0
pF
Crss
-
-
2.5
pF
en
-
10
-
Gate Source Cutoff Voltage
(VOS = 10 Vdc, 10 = 1.0 nAdc)
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 10 Vdc, 10 = 10 mAdc, f
=
1.0 kHz)
Output Admittance
(VOS = 10 Vdc, 10
=
1.0 kHz)
=
10 mAdc, f
Input Capacitance
(VGS = -10 Vdc, VOS
= 0 Vdc, f =
Reverse Transfer Capacitance
(VGS = -10 Vdc, VOS = 0 Vdc, f
=
1.0 MHz)
1.0 MHz)
Equivalent Short-Circuit Input Noise Voltage
(VOS = 10 Vdc, 10 = 10 mAdc, f = 100 Hz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-168
nV/YHz
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
IG
10
mAde
Gate Current
MMBFU310L
CASE 318-03, STYLE 10
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Po
225
mW
1.8
mWrC
R8JA
556
°CIW
Po
300
mW
2.4
mWrC
R6JA
417
°CIW
TJ, Tst9
-55 to +150
°C
Total Device Dissipation FR-5 Board,"
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina SUbstrate,** TA
Derate above 25°C
=
Unit
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
JFET
"FR-5 = 1.0 x 0.75 x 0.062 m.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
TRANSISTOR
N-cHANNEL
DEVICE MARKING
MMBFU310L
= 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
V(BR)GSS
-25
Gate 1 Leakage Current
(VGS = -15V,VOS = 0)
IGISS
-
-150
pA
Gate 2 Leakage Current
(VGS = -15 V, VOS = 0, TA = 125°C)
IG2SS
-
-150
nA
Characteristic
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = -1.0 IIA, VOS = 0)
-
Vdc
VGS(off)
-2.5
-6.0
Vdc
lOSS
24
60
rnA
VGS(f)
-
1.0
Vdc
Forward Transfer Admittance
(VOS = 10 V, 10 = 10 rnA, f = 1.0 kHz)
IYfsl
10
18
mmhos
Output Admittance
(VOS = 10 V, 10 = 10 rnA, f = 1.0 kHz)
IVosl
250
p.mhos
Input Capacitance
(VGS = -10 V, VOS = 10 V, f = 1.0 MHz)
Ciss
-
5.0
pF
Reverse Transfer Capacitance
(VGS = -10 V, VOS = 10 V, f = 1.0 MHz)
Crss
-
2.5
pF
Gate Source Cutoff Voltage
(VOS = 10 V, 10 = 1.0 nA)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VOS = 10 V, VGS = 0)
Gate-Source Forward Voltage
(IG = 10 rnA. VOS = 0)
SMALL-SIGNAL CHARACTERISTICS
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-169
•
MPF89
CASE 29-03, STYLE 7
TO-92 (TO-226AE)
2 Drain
~
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VOSS
200
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current -
10
10M
400
800
mAdc
Po
0.6
4.8
Watts
mWf'C
TJ, Tstg
-55to 150
°C
8JA
208
°CIW
Continuous (1)
Pulsed (2)
Total Power Dissipation @TA
Derate above 25°C
= 25°C
Operating and Storage
Temperature Range
TMOS FET
TRANSISTOR
N-CHANNEL -
Thermal Resistance Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA
ENHANCEMENT
= 25°C unless otherwise noted.)
I
Characteristic
•
, Source
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)OSS
200
-
-
Zero Gate Voltage Orain Current
(VOS = 200 V, VGS = 0)
lOSS
-
0.1
60
!LAdc
Gate-Body Leakage Current
(VGS = 20 V, VOS = 0)
IGSS
-
0.01
100
nAdc
Gate Threshold Voltage (10 = 1.0 rnA, VOS = VGS)
VGS(th)
1.0
-
2.7
Vdc
Orain-Source On-Voltage (VGS = 10 V)
(10 = 100 rnA)
(10 = 300 rnA)
(10 = 500 rnA)
VOS(on)
Drain-Source Breakdown Voltage (VGS = 0, 10 = 0.5 rnA)
Vdc
ON CHARACTERISTICS'
On-State Orain Current
(VOS = 25 V, VGS = 10 V)
10(on)
Static Orain-Source On-Resistance (VGS = 10 Vdc)
(10 = 150 rnA)
(10 = 300 rnA)
(10 = 500 rnA)
rOS(on)
Vdc
-
0.45
1.2
3.0
500
700
-
0.6
1.8
-
rnA
Ohms
4.5
-
6.0
6.0
6.0
-
9ls
140
400
-
mmhos
Input Capacitance
(VOS = 25 V, VGS = 0, I = 1.0 MHz)
Ciss
-
72
-
pF
Output Capacitance
(VOS = 25 V, VGS = 0, 1= 1.0 MHz)
Coss
-
15
-
pF
Reverse Transler Capacitance
(VOS = 25 V, VGS = 0, 1= 1.0 MHz)
Crss
-
2.8
-
pF
Forward Transconductance (VOS = 25 V, 10 = 300 rnA)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS'
Turn-On Time (See Figure 1)
Turn-Off Time (See Figure 1)
(1) The Power Oissipation 01 the package may result in a lower continuous drain current.
(2) Pulse Width", 300 !,-s, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-170
MPF102
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
,'~~'"
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
25
Vdc
Drain-Gate Voltage
VDG
25
Vdc
Gate-Source Voltage
VGS
-25
Vdc
Gate Current
IG
10
mAde
Total Device Dissipation @ T A = 25·C
Derate above 25·C
PD
200
2
mW
mWrC
Junction Temperature Range
TJ
125
·C
Storage Temperature Range
Tstg
-65 to + 150
·C
23
2 Source
JFET
VHF AMPLIFIER
N-CHANNEL -
DEPLETION
Refer to 2N4416 for graphs.
ELECTRICAL CHARACTERISTICS (TA
= 25·C unless otherwise
noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-25
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -10 pAdc. VDS = 0)
Gate Reverse Current
(VGS = -15 Vdc. VDS
(VGS = -15 Vdc, VDS
IGSS
= 0)
= 0, TA =
100·C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc)
Gate Source Voltage
(VDS = 15 Vdc, ID
VGS(off)
VGS
= 0.2 mAde)
-
-2.0
-2.0
nAdc
pAdc
-8.0
Vdc
-0.5
-7.5
Vdc
2000
1600
7500
ON CHARACTERIS11CS
Zero-Gate-Voltage Drain Current'
(VDS = 15 Vdc, VGS = 0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance'
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Input Admittance
(VDS = 15 Vdc, VGS
= 0, f =
100 MHz)
Output Conductance
(VDS = 15 Vdc, VGS
= 0, f =
100 MHz)
Input Capacitance
(VDS = 15 Vdc, VGS
= 0, f =
1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f
=
Io'mhos
IYfsl
-
800
Io'mhos
Re(yos)
-
200
Io'mhos
Ciss
-
7.0
pF
Crss
-
3.0
pF
1.0 MHz)
'Pulse Test: Pulse Width", 630 ms; Duty Cycle'" 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-171
-
Re(Yis)
II
MPF820
CASE 29-04, STYLE 5
TO-92 ITO-226AA)
1 Drain
,~-@
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VOS
25
Vdc
VOG
25
Vdc
VGSR
25
Vdc
IGlfl
10
mAde
Po
625
5.0
mW
mWrC
TJ, Tstg
-65 to +150
°c
Drain-Source Voltage
Drain-Gate Voltage
Reverae Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
2 Source
JFET
RF AMPLIFIER
N-CHANNEL -
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteriatlc
•
Symbol
Min
V(BR)GSS
25
Typ
Max
Unit
-
-
Vdc
5.0
nAdc
-5.0
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 10 IoIAdc, VOS = 0)
Gate Reverae Current
(VGS = 15 Vdc, VOS = 0)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 200 IoIAdc)
IGSS
-
VGS(off)
-
ON CHARACTERISTICS
Zero-Gate-Voltage Drain
(VOS = 15 Vdc, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 Vdc, VGS = 0, f = 1.0 kHz)
IYfsl
Input Capacitance
(VOS = 15 Vdc, 10 = 10 mAde, f = 1.0 MHz)
Ciss
Reverae Transfer Capacitance
(VOS = 15 Vdc, 10 = 10 mAde, f = 1.0 MHz)
Cras
Common-Gate Input Conductance
(VOS = 15 Vdc, 10 = 10 mAde, f = 100 MHz)
gig
-
Common-Gate Output Conductance
(VOS = 15 Vdc, 10 = 10 mAde, f = 100 MHz)
Gog
-
Common-Gate Forward Transadmittance
(VOS = 15 Vdc, 10 = 10 mAde, f = 100 MHz)
Yfg
Common-Gate Reverse Transadmittance
(VOS = 15 Vdc, 10 = 10 mAde, f = 100 MHz)
Yrg
Output Capacitance
(VOS = 15 Vdc, 10 = 10 mAde, f = 1.0 kHz)
Coss
-
16
-
mmhos
-
16
"mhos
18
-
mmhos
-
130
"mhos
3.5
-
pF
-
4.0
dB
11
-
dB
20
15
3.5
mmhos
pF
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 Vdc, 10 = 10 mAde, See Figure 5)
NF
Small-Signal Power Gain
(VOS = 15 Vdc, 10 = 10 mAde, See Figure 5)
Gpg
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-172
MPF820
FIGURE 1 - NOISE FIGURE
5.0
FIGURE 2 - FORWARD TRANSADMITTANCE
20
,= 100 MHz
..
w
::>
to
--
3.0
u::
~
0
E
.§l
w
,/
;;;
:s
2.0
z
!i
,= I.b kHz
~
I-'"
4.0
'"'~
V
k-' ~
:;;
Q
~
7. 0
2:
~ 5.0
......
Q
~~
1.0
o
0.1
0
1
0.3
0.2
0.6
0.4
0.8
3.0
--
2.0
0.1
1.0
i.---"'"
I--
0.5
0.2
10. DRAIN CURRENTlmA)
FIGURE 3 -INPUT CAPACITANCE
FIGURE 4 -OUTPUT AND REVERSE
TRANSFER CAPACITANCE
2.0
"'
,1'1.0MHl_
"-
oS
w
'"'z
....
""
......
,
1.6
........
12
I'-.....
~
C3
""
5
.... 8.0
-..
ir
:!!;
o
o
5.0
2.0
RG.SOURCE RESISTANCE (KILOHMS)
20
.......
16
1.0
--
"
i
.......crss
w
............
1.2
"-........
'"'
Z
....""
~
5
0.8
""""'- r~oss
-r-....-
0.4
o
-2.0
-1.0
I
'=1.0 MHZ_
"-
oS
-3.0
o
-4.0
4.0
VGS. GATE·SOURCE VOLTAGE (VOLTS)
8.0
ID. DRAIN CURRENT (mAl
FIGURE5 -100 MHz TEST CIRCUIT
1.0-IS pF
INPUT
RS'50n
rr
7TURNS, #18 AWG
3116" I.D .. C. T.
3I1S"WINDING LENGTH
330 pF
330pF
10
1:
-15
v'
10 pF ":"
~:-S.O
STURNS. #22 AWG
5/32" 1.0., C. T.
5/16"W1NDING LENGTH
VG ADJUSTS FOR
ID-10mA
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-173
12
16
•
MPF910
For Specifications, See MFE910 Data.
MPF930
MPF960
MPF990
MAXIMUM RATINGS
Rating
Symbol MPF930 MPF960 MPF990
Drain-Source Voltage
VDS
35
Drain-Gate Voltage
VDG
35
Gate-Source Voltage
VGS
Drain Current
Continuous (1)
Pulsed (2)
Unit
SO
90
Vdc
SO
90
Vdc
±30
CASE 29-03, STYLE 22
TO-92 (TO-226AE)
l~
Vdc
Adc
2.0
3.0
10
10M
Total Device Dissipation
@TA = 25"C
Derate above 25"C
Po
Operating and Storage Junction
Temperature Range
Thermal Resistance
1.0
8.0
Watts
mW/"C
TJ, Tstg
-55to 150
"C
8JA
125
1 Source
TMOS
SWITCHING
"C/W
(1) The Power Dissipation of the package may result in a lower continuous drain
N-CHANNEL -
current.
ENHANCEMENT
(2) Pulse Width", 300 /LB, Duty Cycle'" 2.0%.
Refer to MFE930 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
•
Symbol
Characteristic
Min
Typ
Max
-
-
-
1.0
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS = 0, 10 = 10!-IA)
Gate Reverse Current
(VGS
=
V(BR)OSX
35
60
90
MPF930
MPF9S0
MPF990
15 Vdc, VOS
= 0)
Vdc
50
nAdc
-
10
!-IAdc
-
3.5
Vdc
0.4
0.6
O.S
0.7
0.8
1.2
-
0.9
1.2
1.2
1.4
1.7
2.4
-
2.2
2.8
2.8
3.0
3.5
4.8
-
-
0.9
1.2
1.2
1.4
1.7
2.0
1.0
2.0
-
Amps
-
SO
70
pF
Crss
13
18
pF
Coss
-
49
60
pF
9fs
200
380
-
mmhos
IGSS
ON CHARACTERISTICS'
Zero-Gate-Voltage Drain Current
Gate Threshold Voltage
(10
=
Drain-Source On-Voltage (VGS
(10 = 0.5 A)
(VOS
=
Maximum Rating, VGS
1.0 rnA, VOS
=
= 0)
= VGS)
10 V)
VDS(on)
MPF930
MPF9S0
MPF990
(10 = 1.0 A)
MPF930
MPF9S0
MPF990
(10 = 2.0 A)
MPF930
MPF9S0
MPF990
Static Drain-Source On Resistance
(VGS = 10 Vdc, 10 = 1.0 Adc)
On-State Drain Current
lOSS
VGS(Th)
(VOS = 25 V, VGS
-
-
rOS(on)
MPF930
MPF9S0
MPF990
=
10 V)
-
ID(on)
Vdc
Ohms
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
Output Capacitance
(VOS = 25 V, VGS
=
0, f
Ciss
=
1.0 MHz)
(VOS = 25 V, VGS = 0, f = 1.0 MHz)
Forward Transconductance
(VOS = 25 V, 10 = 0.5 A)
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
'Pulse Test: Pulse Width", 300 /LB, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-174
MPF970
MPF971
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Drain-Gate Voltage
VOG
30
Vdc
VGSR
30
Vdc
IG(f)
10
mAde
Po
350
2.8
mW
mWrC
Tstg
-65to +150
·C
Tchannel
-65 to + 150
'c
Reverse Gate-Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Storage Channel Temperature Range
Operating Temperature Range
ELECTRICAL CHARACTERISTICS
(TA
=
JFET
SWITCHING
P-CHANNEL -
DEPLETION
25'C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
30
-
-
-
-
1.0
1.0
nAdc
!tAdc
-
-
10
10
10
10
nAdc
!tAdc
nAdc
!tAdc
5.0
1.0
-
12
7.0
-15
-2.0
-
-100
-50
-
-
1.5
1.5
-
-
-
-
-
-
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !tAdc, VOS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 150'C)
Drain-Cutoff Current
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
(VOS = 15 Vdc, VGS
IGSS
-
'O(off)
=
=
=
=
12 Vdc)
12 Vdc, TA = 150'C)
7.0 Vdc)
7.0 Vdc, TA = 150'C)
Gate Source Cutoff Voltage
(VOS = 15 Vdc, 10 = 10 nAdc)
MPF970
MPF970
MPF971
MPF971
-
VGS(off)
MPF970
MPF971
Vdc
Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current( 1)
(VOS = 20 Vdc, VGS = 0)
Drain-Source On-Voltage
(10 = 10 mAde, VGS = 0)
(10 = 1.5 mAde, VGS = 0)
Static Drain-Source On Resistance
(lD = 1.0 mAde, VGS = 0)
mAde
lOSS
MPF970
MPF971
VOS(on)
rOS(on)
MPF970
MPF971
Vdc
Ohms
100
250
SMALL-SIGNAL CHARACTERISTICS
Drain-Source "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
rds(on)
MPF970
MPF971
Input Capacitance
(VGS = 12 Vdc, VOS = 0, f = 1.0 MHz)
(VGS = 7.0 Vdc, VOS = 0, f = 1.0 MHz)
MPF970
MPF971
Reverse Transfer Capacitance
(VGS = 12 Vdc, VOS = 0, f = 1.0 MHz)
(VGS = 7.0 Vdc, VOS = 0, f = 1.0 MHz)
MPF970
MPF971
-
Ciss
-
Crss
pF
12
12
pF
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-175
Ohms
100
250
-
5.0
5.0
•
MPF970, MPF971
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
I
Characteristic
Symbol
Min
Typ
Max
-
2.0
3.0
5.0
5.0
-
9.0
68
15
80
-
3.5
5.0
8.0
10
-
13
88
25
120
Unit
SWITCHING CHARACTERISTICS (See Figure 6 RK = 0) (1)
Rise Time
(lO(on) = 10 mAde, VGS(off) = 12 Vdc)
(lOlon) = 1.5 mAde, VGSloff) = 7.0 Vde)
MPF970
MPF971
Fall Time
(lO(on) = 10 mAde, VGSloff) = 12 Vde)
(lO(on) = 1.5 mAde, VGS(off) = 7.0 Vdc)
MPF970
MPF971
Turn-On Time
(lO(on) = 10 mAde, VGSloff) = 12 Vde)
(lO(on) = 1.5 mAde, VGS(off) = 7.0 Vde)
MPF970
MPF971
Turn-Off Time
(lO(on) = 10 mAde, VGS(off) = 12 Vde)
(lO(on) = 1.5 mAde, VGS{offl = 7.0 Vde)
MPF970
MPF971
ns
tr
ns
tf
ns
ton
toff
ns
11) Pulse Test: Pulse Width.;; 100 p.s, Duty Cycle.;; 1.0%.
FIGURE 1 - EFFECT OF lOSS ON DRAIN-50URCE
RESISTANCE AND GATE·SOURCE VOL TAGE
•
200
W
~
!\
\
\
160
I-
«'z
~~
~@VGS=O
",'"
40
50
70
60
o
lOSS, ZERO·GATE VOLTAGE DRAIN CURRENT (mAl
FIGURE 2 - TURN·ON DELAY TIME
]
W
';::"'
5i:l:
:
0:
~
1
~
100
70
50
0
0
FIGURE 3 - RISE TIME
100
70
50
Tchannal=25 0 C ~
........
VGS(DIf) • 12 V (MPF970)7.0 V MPF971i-
RK' Ro'
..... r-..
I0
3.0
2.0
.0
0.2 0.3
!w
r--.... I""'-
';::"'
MPF970
RK' 0
~
'"
-
'"
'::::::::/==
VGS(off) -12 V (MPF970)
7.0 V(MPF9711
..... r-t
20
........MPF971
......... :'-
0
7.0
5.0
RK =o I--
3.0
1
MPF971
MPF970
MPF971
MPF970
2.0
MPF970-
II
0.5 0.7
0
i"o. MPF971
7.0
5.0
Tch.n ..1• 25°C
R • Ro'
1.0
1.0
2.0
3.0
5.0 7.0
10
20
10, DRAIN CURRENT (mA)
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10, DRAIN CURRENT (mA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-176
10
20
MPF970, MPF971
FIGURE 4 - TURN-OFF DELAY TIME
FIGURE 5 - FALL TIME
300
!w
RK'RD'
200 .....
or"""
:&
>=
10
~
70
0
...
Q
Q
200
0
MPF970
i>'C
""
7.0
0.2 0.3
0.5
0.7
1.0
2.0
3.0
~
ch.nn.l- 25 (; I--+f)( RK - RD~'_± ~VGS(aff)'
12 V (MPF9701
~ I(i"
"
RK' 0 .....
0
.....
0
7. 0
5.0
5.0
7.0
10
20
I'.
"'"
0.2 0.3
0.5 0.7
"
OUTPUT
INPUT PULSE
RGG» RK
RD" RD(Rr+50)
RD+RT+50
~
7.0
.
or
w
~
~
IQ
2.0
1/",
rtlY'
~
V
w
u
1.
~
O.70.2 0.3
13
«
slightly lower than Drain Supply
..... r-!:gs' Cgd
Tchannel:: 25°C
. \~lsisnegligblel
.;
2.0
0.03 0.05
2.0
3.0
5.0
7.0
10
r-..
S.0
3.0
1.0
IS
7. 0
~
MPF970
~
0.5 0.7
at Gate Supply Voltage (+VGGI. The
z
«
l-
Tehannel = 250 C
VOS'20V
oVVV
i
20
0
l./
MPF97:V l./
10
0
I-""
3.0
7.0
FIGURE 8 - TYPICAL CAPACITANCE
FIGURE 7 - TYPICAL FORWARD TRANSFER ADMITTANCE
iii
Q
«
5.0
During the turn-on interval, Gate-Source Capacitance (egs)
discharges through the series combination of RGen and AK· Cgd
must discharge to VOS(on) through RG and RK in series with the
parallel combination of effective load impedance (R'O) and
Drain·Source Resistance (rds'- Durmg the turn-off. thi~ charge
flow is reversed.
Predicting turn-on time is somewhat difficult as the channel
resistance 'ds is a function of the gate-source voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cad
discharges through rds, turn-on time is non·linear. During turn-off.
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions; 1 )
RK is equal to RD. which simulates the switching behavior of
cascaded stages where the driving source impedance is normally
the load impedance of the previous stage, and 2) RK ::; 0 (low
Impedance) the driving source impedance is that of the generator.
son
5.0
IS
Drain·Source Voltage (VOS)
son
w
3.0
Voltage (V DO) due to the voltage divider. Thus Reverse Transfer
Capacitance (Crss ) or Gate-Drain Capacitance ICgd) is charged to
VGG + VOS·
SET VDS(aff)'-10 V
z
2.0
1.0
test circuit similar to Figure 6. At the beginning of the switching
interval, the gate voltage
u
MPF970- I--
i'-...
NOTE 1
The sWitching characteristics shown above were measured using a
RD
IE
'"
10, DRAIN CURRENT (mAl
-VDD
tr... / '
.....
MPF971 '
0
I-
Tchannel = 250~t±
"-
""
0
~
:::>
_
50 0
500
III
,Ill
0.1
"-.....
I I
0.2 0.3
0.5
1.0
2.0 3.0
5.0
VR, REVERSE VDLTAGE (VOLTS)
20
ID, DRAIN CURRENT (mAl
.MOTOROLA SMAll-SIGNAL TRANSISTORS, FETs AND DIODES
4-177
10
20 30
II
MPF970, MPF971
FIGURE 10 - EFFECT OF TEMPERATURE ON DRAIN-SOURCE
ON-STATE RESISTANCE
FIGURE 9 - EFFECT OF GATE-SOURCE VOLTAGE
ON DRAIN-SOURCE RESISTANCE
28 0
HIDSS=
7.5 rnA
o
I
I
15mA 20rnA
30 rnA
II
II
I
II
40 rnA
2.0
I
50 rnA
1.8 I -
ID~1.0~A
VV
VGS=O
w
I
011
I
/
0
/
I
I
I
1/
: / /"
/
./ ./
0_
>--"" l---
>---
/
/
~§
1.6
~~
1.4
~~
1.2
w'"
7
o~
~~ 1.0
~~
.£'"
~
3.0
4.0
I
0.8
0.6
0.4
5.0
-60
VGS. GATE-SOURCE VOLTAGE (VOLTS)
•
V
"'I-
Tchannel:: 25°C
2.0
I.........
V
l /V
".'w
./
~
I
1.0
......... V
,/
V V
-30
30
60
90
Tehannel. CHANNEL TEMPERATURE (OC)
FIGURE 11 - LOW FREQUENCY CIRCUIT MOO'EL
Yls~JwCtSS
Yos'" llross+JwC oss
Yfs"'IYfsl
Yrs"'-]wC rss
C1SS '" Cgd+ Cgs
Crss '" Cgd
Coss '" Cgd + Cds. Cds"" 0
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-178
120
150
MPF990
For Specifications, See MPF930
MPF3330
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
1 Drain
,~-@
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Reverse Gate-Source Voltage
Symbol
Value
Unit
VOG
20
Vdc
VGS
20
Vdc
VGSR
20
Vdc
IG
10
mA
Po
310
2.82
mW
mWrC
Tst
-65to +150
°c
Gate Current
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Storage Temperature Range
2 Source
JFET
LOW FREQUENCY, LOW NOISE
P-CHANNEL - DEPLETION
Refer to 2N5460 for graphs.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
20
-
Vdc
IGSS
-
10
nA
VGS(off)
-
6.0
Vdc
lOSS'
-2.0
-6.0
mA
ros
-
800
!l
3000
/Lmhos
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG ~ 10,.A)
Gate Reverse Current
(VGS ~ 10V)
Gate Source Cutoff Voltage
(VOS ~ -15 V, 10 ~ 10,.A)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS ~ -10V)
Drain-Source Resistance
(10 ~ 100,.A, VGS ~ 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS ~ -10 V,IO ~ 2.0 mA. f
~
1.0 kHz)
Output Admittance
(VOS ~ -10 V,IO
~
1.0 kHz)
~
2.0 mA. f
Input Capacitanca
(VOS ~ -10 Volts, VGS
~
IYIsI'
1.0 Volt, f
~
1.0 MHz)
1500
IYosl
-
40
/Lmhos
Ciss
-
20
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS ~ -5.0 V, 10
~
1.0 mA, RG
~
1.0 M!l)
'Pulse Width", 100 ms, Duty Cycle'" 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-179
•
MPF3821
MPF3822
CASE 29-04, STYLE 5
TO-92 (TO-226AAI
1 Drain
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
VOS
50
Vdc
Orain-Gate Voltage
VOG
50
Vdc
Gate-Source Voltage
VGS
-50
Vdc
Rating
Orain Current
10
10
mAdc
Total Oevice Oissipation @ TA = 25·C
Oerate above 25·C
Po
310
2.0
mW
mWI"C
Junction Temperature Range
TJ
125
·C
Storage Temperature Range
Tstg
-65 to 150
·C
2 Source
JFET
GENERAL PURPOSE
N-CHANNEL -
DEPLETION
Refer to 2N4220 for graphs.
ELECTRICAL CHARACTERISTICS
•
(TA = 25·C unless othe.rwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-50
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -1.0 MAdc, VOS = 0)
Gate Reverse Current
(VGS = -30 Vdc, VOS = 0)
(VGS '" -30 Vdc, VOS = 0, TA = 150·C)
Gate Source Cutoff Voltage
(10 = 0.5 nAdc, VOS = 15 Vdc)
Gate Source Voltage
(10 = 50 MAde, VOS = 15 Vdc)
(10 = 200 MAde, VOS = 15 Vdc)
IGSS
VGS(off)
MPF3821
MPF3822
nAdc
-
-0.1
-100
-
-4.0
-6.0
Vdc
Vdc
VGS
MPF3821
MPF3822
-0.5
-1.0
-2.0
-4.0
MPF3821
MPF3822
1500
3000
4500
6500
MPF3821
MPF3822
1500
3000
-
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(l)
(VOS = 15 Vdc, VGS = 0)
MPF3821
MPF3822
SMALL-SIGNAL CHARACTERISTICS
Forward Transler Admittance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)(l)
(VOS = 15 Vdc, VGS = 0, I = 100 MHz)
Output Admittance(l)
(VOS = 15 Vdc, VGS = 0, 1= 1.0 kHz)
"mhos
IYlsl
IYosl
MPF3821
MPF3822
-
"mhos
-
10
20
Input Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Ciss
-
6.0
pF
Reverse Transler Capacitance
(VOS = 15 Vdc, VGS = 0, 1= 1.0 MHz)
Crss
-
3.0
pF
Noise Figure
(VOS = 15 Vdc, VGS = 0, RS = 1.0 megohm,
I = 10Hz, Noise Bandwidth = 5.0 Hz)
NF
-
5.0
dB
Equivalent Input Noise Voltage
(VOS = 15 Vdc, VGS = 0, I = 10 Hz, Noise Bandwidth = 5.0 Hz)
en
-
200
nv/HzV.
FUNCTIONAL CHARACTERISTICS
(1) Pulsa Teat: Pulse Width", 100 ms, Outy Cycle'" 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-180
MPF3970
MPF3972
CASE 29-04, STYLE 5
TO·92 (TO·226AA)
1 Drain
,~~
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Reverse Gate-Source Voltage
Symbol
Value
Unit
VOS
40
Vdc
VOG
40
Vdc
VGSR
-40
Vdc
Forward Gate Current
IGF
SO
mA
Total Device Dissipation @ TA = 2S"C
Derate above 2S"C
Po
310
2.82
mW
mW/"C
Operating and Storage Junction
Temperature Range
TJ, Tstg
-6S to
+ 1S0
2 Source
JFET
SWITCHING
N-CHANNEL -
"C
DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 2S"C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
40
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 1.0 /LA, VGS = 0)
Drain-to-Gate Leakage
(VOG = 20 V, IS = 0)
lOGO
-
2S0
pA
Gate Reverse Current
(VGS = 20 V, VOS = 0)
IGSS
-
2S0
pA
Gate Source Cutoff Voltage
(VOS = -20 V, 10 = 1.0 nA)
Drain Source Voltage
(VGS = 0)
(10 = 20 rnA)
(10 = S.O rnA)
Drain Cutoff Current
(VOS = 20 V, VGS
Vdc
VGS(off)
-4.0
-O.S
MPF3970
MPF3972
-10
-3.0
Vdc
VOS
-
2S0
SO
S.O
1S0
30
-
-
30
100
Ciss
-
25
pF
Crss
-
6.0
pF
lOGO
-
SOO
nA
10(off)
-
SOO
nA
MPF3970
MPF3972
=
10(off)
1.0
2.0
pA
-12 V)
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current
(VOS = 20 V, VGS = 0)
Drain-Source "ON" Resistance
(10 = 1.0 rnA, VGS = 0)
Input Capacitance
(VDS = 20 V, VGS
= 0, f =
Reverse Transfer Capacitance
(VOS = 0, VGS = -12 V, f
rnA
lOSS
MPF3970
MPF3972
rOS(on)
MPF3970
MPF3972
n
1.0 MHz)
=
1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Drain-Gate Leakage
(VOG = 20 V, IS = 0, TA
Drain Cutoff Current
(VDS = 20 V, VGS
=
=
1S0"C)
-12 V, TA
=
1S0"C)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-181
•
MPF3970, MPF3972
ELECTRICAL CHARACTERISncS (continued) (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Drain-Source "ON" Resistance
(10 = 0, VGS = 0, f = 1.0 kHz)
rds(on)
MPF3970
MPF3972
Min
Max
-
30
100
Unit
0
SWITCHING CHARACTERISTICS
Switching Characteristics
(MPF3970 Only)
(VOO = 10 V, VGS = 0, 10(on)
Switching Characteristics
(MPF3972 Only)
(VOO = 10 V, VGS = 0, 10(on)
10 V)
td(on)
tr
toff
= 3.0 V)
Id(on)
tr
toff
= 20 rnA, VGS(off) =
=
5.0 rnA, VGSJofft
-
10
10
30
ns
-
40
40
ns
100
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-182
MPF4221
MPF4222A
CASE 29-04. STYLE 5
TO-92 (TO-226AA)
"I ~f§"
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Orain-Source Voltage
VOS
30
Vdc
Orain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
VGSR
30
Vdc
IG
10
mA
Po
310
2.B2
mW
mWI"C
Reverse Gate-Source Voltage
Gate Current
Total Oevice Oissipation @ TA
Oerate above 25°C
= 25°C
Storage Temperature Range
Tsta
-65 to
+ 150
3
2 Source
JFETs
LOW FREQUENCY
N-CHANNEL -
DEPLETION
°C
Refer to 2N4220 for graphs.
I
ELECTRICAL CHARACTERISTICS
(TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)GSS
-30
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -10 !lA, VOS = a V)
Gate Reverse Current
(VGS = -15V,VOS
IGSS
=
-
-100
Vdc
pA
OV)
Gate Source Cutoff Voltage
(VOS = 15 V, 10 = 0.1 nA)
VGS(off)
MPF4221
MPF4222A
Gate Source Voltage
(VOS = 15 V, 10 = 200 /LA)
(VOS = 15 V, 10 = 500 /LA)
-
-
Vdc
-6.0
-B.O
Vdc
VGS
MPF4221
MPF4222A
-1.0
-2.0
-5.0
-6.0
2000
2500
5000
6000
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = 15 Volts, VGS = a V)
MPF4221
MPF4222A
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 V, f = 1.0 kHz, VGS
= a V)
MPF4221
MPF4222A
Output Admittance
(VOS = 15 V, f = 1.0 kHz, VGS
=
MPF4221
MPF4222A
/Lmhos
IYfsl'
IYosl
/LmhOS
Input Capacitance
(VOS = 15 V, f = 1.0 MHz)
Ciss
-
Reverse Transfer Capacitance
(VOS = 15 V, f = 1.0 MHz)
Crss
-
0 V)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 V, f
=
100 Hz, RG
=
1.0 MO)
'Pulse Width", 100 ms, Outy Cycle'" 10%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-183
20
40
6.0
pF
2.0
pF
•
MPF4223
MPF4224
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
,,' ~~.;"
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Orain-Source Voltage
VOS
30
Vdc
Orain-Gate Voltage
VOG
30
Vdc
Orain Current
10
20
mA
Gate Current
IG
10
mA
Po
300
2.0
mW
mW(,C
Total Oevice Oissipation @ TA
Oerate above 25°C
= 25°C
Operating and Storage Junction
Temperature Range
TJ, T9I9
ELECTRICAL CHARACTERISTICS (TA
•
=
-65 to
+ 150
3
2 Source
JFET
HIGH FREQUENCY
AMPLIFIERS
N-CHANNEL -
°C
DEPLETION
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
-30
-
Vdc
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = -10"A)
Gate 1 Leakage Current
(VG1S = -20 V)
IGISS
MPF4223
MPF4224
Gate Source Cutoff Voltage
(10 = 0.25 nA, VOS = 15 V)
(10 = 0.5 nA, VOS = 15 V)
MPF4223
MPF4224
Gate Source Voltage
(10 = 0.3 mA, VOS = 15 V)
(10 = 0.2 mA, VOS = 15 V)
MPF4223
MPF4224
nA
-
0.25
0.50
-0.1
-0.1
-8.0
-8.0
-1.0
-1.0
-7.0
-7.5
3000
2000
7000
7500
Vdc
VGS(off)
Vdc
VGS
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current
(VOS = 15V)
MPF4223
MPF4224
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VOS = 15 V, VGS = 0 V, f = 1.0 kHz)
",mhos
IYfsl
MPF4223
MPF4224
Output Conductance
(VOS = 15 V, VGS = 0 V, f = 200 MHz)
Re(yos)
-
200
",mhos
Input Capacitance
(VOS = 15 V, VGS = 0 V, f = 1.0 MHz)
Ciss
-
6.0
pF
Reverse Transfer Capacitance
(VOS = 15 V, VGS = 0 V, f = 1.0 MHz)
Crss
-
2.0
pF
NF
-
5.0
dB
Gps
10
-
dB
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VOS = 15 V, VGS = 0 V, RG = 1.0 kn, f = 200 MHz)
MPF4223 (Only)
Common Source Power Gain
(VOS = 15 V, VGS = 0 V, f = 200 MHz)
MPF4223 (Only)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-184
MPF4391
thru
MPF4393
CASE 29-04, STYLE 5
TO-92 (TO-226AA)
"~I ,~~~.
MAXIMUM RATINGS
Rating
Symbol
Value
Orain-Source Voltage
VOS
30
Vdc
Orain-Gate Voltage
VOG
30
Vdc
Gate-Source Voltage
VGS
30
Vdc
Forward Gate Current
IG(f)
50
mAde
Po
360
2.4
mW
Total Oevice Oissipation @ TA = 25°C
Oerate above 25°C
Operating and Storage Channel
Temperature Range
Tchannel,
Tsta
-65 to
+ 150
Unit
3
JFETs
SWITCHING
mWrC
N-CHANNEL - DEPLETION
°c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
V(BR)GSS
30
-
-
Vdc
-
1.0
0.2
nAdc
!LAde
-
1.0
0.1
nAdc
pAdc
Max
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !LAde, VOS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VOS = 0)
(VGS = 15 Vdc, VOS = 0, TA = 100°C)
IGSS
Orain-Cutoff Current
(VOS = 15 Vdc, VGS = 12 Vdc)
(VOS = 15 Vdc, VGS = 12 Vdc, TA = 100°C)
10(off)
Gate Source Voltage
(VOS = 15 Vdc, 10 = 10 nAdc)
-
-
-
-
Vdc
VGS
MPF4391
MPF4392
MPF4393
-4.0
-2.0
-0.5
-
-
-10
-5.0
-3.0
60
25
5.0
-
130
75
30
-
-
0.4
0.4
0.4
-
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(l)
(VOS = 15 Vdc, VGS = 0)
Orain-Source On-Voltage
(10 = 12 mAde, VGS = 0)
(10 = 6.0 mAde, VGS = 0)
(10 = 3.0 mAde, VGS = 0)
Static Orain-Source On Resistance
(10 = 1.0 mAde, VGS = 0)
mAde
lOSS
MPF4391
MPF4392
MPF4393
VOS(on)
MPF4391
MPF4392
MPF4393
rOS(on)
MPF4391
MPF4392
MPF4393
Vdc
-
Ohms
-
-
-
30
60
100
-
20
17
12
-
-
-
30
60
100
6.0
10
SMALL-SIGNAL CHARACTERISTlCS
Forward Transfer Admittance
(VOS = 15 Vdc, 10 = 60 mAde, f = 1.0 kHz)
(VOS = 15 Vdc, 10 = 25 mAde, f = 1.0 kHz)
(VOS = 15 Vdc, 10 = 5.0 mAde, f = 1.0 kHz)
Orain-Source "ON" Resistance
(VGS = 0,10 = 0, f = 1.0 kHz)
IVfsl
MPF4391
MPF4392
MPF4393
rds(on)
MPF4391
MPF4392
MPF4393
Input Capacitance
(VGS = 15 Vdc, VOS = 0, f = 1.0 MHz)
Cis.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-185
-
mmhos
Ohms
pF
•
MPF4391 thru MPF4393
ELECTRICAL'CHARACTERISTICS (continued) (TA
= 25'C unless otherwise noted)
Characteristic
Symbol
Reverse Transfer Capacitance
(VGS = 12 Vdc, VOS = 0, f = 1.0 MHz)
(VOS = 15 Vdc, 10 = 10 mAdc, f = 1.0 MHz)
Min
Typ
Max
-
2.5
3.2
3.5
1.2
2.0
2.5
5.0
5.0
5.0
7.0
15
29
15
20
35
3.0
4.0
6.5
15
15
15
10
20
37
20
35
55
Crss
Unit
pF
-
SWITCHING CHARACTERISTICS
Rise Time (See Figure 2)
(lO(on) = 12 mAdc)
(lO(on) = 6.0 mAdc)
(lO(on) = 3.0 mAdc)
MPF4391
MPF4392
MPF4393
Fall Time (See Figure 4)
(VGS(off) = 12 Vdc)
(VGS(off) = 7.0 Vdc)
(VGS(Offl = 5.0 Vdc)
MPF4391
MPF4392
MPF4393
tr
-
tf
Turn-On Time (See Figures 1 and 2)
(lO(on) = 12 mAdc)
(IO(on) = 6.0 mAdc)
(lOlon) = 3.0 mAdc)
MPF4391
MPF4392
MPF4393
Turn-Off Time
(VGS(off) =
(VGS(off) =
(VGSioff) =
MPF4391
MPF4392
MPF4393
ns
-
ton
(See Figures 3 and 4)
12 Vdc)
7.0 Vdc)
5.0 Vdc)
ns
-
ns
-
toff
ns
(1) Pulse Test: Pulse W,dth .. 100 p.s, Duty Cycle .. 1.0%.
•
TYPICAL SWITCHING CHARACTERISTICS
FIGURE l-TURN-ON DELAY TIME
FIGURE 2 - RISE TIME
1000
1000
TJ = 25'C
500
]
200
~
;::
>
100
~r:>
z
z
20
1-.
5.0
G'
"'"C
r-...
50
".
;!1
--
,
._..
1.0
0.5 0.7
1.0
2.0
5.0
7.0
10
';::"
20
~
10
.".
5.0
....
w
-- - -
.. .....
3.0
50
w
RK = 0
2.0
••••••• MPF439,':VGS{,ffl = 12 V
.......
..:::..-I.::....."R K = RD' - - - MPF4392 _
= 7.0 V
200 R+.:I+t'
..... ~
--MPF4393
=5.0V
100 .
]
..... '
10
.s
500
......... MPF4391 VGSI,ff) = 12 V
=7.0V
RK = RD' ----MPF4392
--MPF4393
= 5.0 V
.AI
2.0
30
20
50
.••............•..•.•.....•.... ::..:7..:: ........ .
1.0
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
'D, DRAIN CURRENT (rnA)
ID, DRAIN CURRENT {mAl
FIGURE 3 - TURN-OFF DELAY TIME
FIGURE 4 - FALL TIME
±.. .:. 'H
2.0IH++++-t-t--+-++++++-l--=+4._""".;."'
••
1.0,:-,-:'...J-':":_-'-"""---"'-J....-,':-!....L...L...J..J._..I-...J..._'-.I-I
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
ID, DRAIN CURRENT (rnA)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-186
20
30
50
MPF4391 thru MPF4393
NOTE 1
FIGURE 5 - SWITCHING TIME TEST CIRCUIT
The switching characteristics shown above were measured using a
test circuit similar to Figure 5. At the beginning of the switching
mterval, the gate voltage is at Gate Supply Voltage (-VGG). The
'VOD
Drain-Source Voltage (VOS) is slightly lower than Drain Supply,
Voltage (VOOI due to the voltage divider. Thus Reverse Transfer
AD
SET VOSlolf)
INPUT
Capacitance (Crssl or Gate-Drain Capacitance (Cgdl is charged to
VGG + VDS·
lOV
During the turn-on interval, Gate-Source Capacitance (Cgs ) dis~
charges through the series combination of RGen and RK. Cad
must discharge to VaS(on) through RG and RK in series with the
parallel combination of effective load impedance (R'O) and Orain~
Source Resistance Irds). During the turn-off, this charge flow is
reversed.
Predicting turn-on time is somewhat difficult as the channel
resistance rds is a function of the gate~source voltage. While Cgs
discharges, VGS approaches zero and rds decreases. Since Cgd
discharges through rds' turn-on time is non~linear. During turn-off,
the situation is reversed with rds increasing as Cgd charges.
The above switching curves show two impedance conditions; 1)
RK is equal to RO' which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) RK = 0 (low imped~
ance) the driving source impedance is that of the generator.
RT"
AK,
OUTPUT
50U
INPUT PULSE
I,02511s
It ,0 5 11~
PULSE WIDTH -20/AS
DUTY CYCLE -<:20
0
UFU9l
~
0
MPF4393..,
0
.......:;
Y
O~
5
.... ~f--'
0
MPF4391
::::::--
~
.....
Z
~
i3
5. 0
d
3. 0
:1:
5
Tchannel"" 25°C
VOS=15V
~
.............. :---.
= 250 C
Tehannel
(Cds is neglig ibl,)
2.0
1.5
0.7
1.0
20
2.0 3.0
5.0 7.0 10
10. DRAIN CURRENT (mA)
30
I
I
I
I
/
I
I
I I
I I
)
I II II II I
II
J
/
oil J
V
/ / / /
V
oV....- / . /
2.0
3.0
5.0
10
30
6.0
V
/'
6
II
TChinner=
4.0
3.0 5.0
1. BDID=1.0LA
VGS=O
4
./
2
B
..............
2r C-
0
1.0
1.0
2.0
I
I
I--
0.3 0.5
FIGURE 9 - EFFECT OF TEMPERATURE ON DRAIN-SOURCE
ON-5TATE RESISTANCE
0
~ I-::::
0.1
VR. REVERSE VOLTAGE (VOLTS)
125mA I
50mAI 75mA/l00mA
lOSS 125 mAl
= 10
mA
""' ....
IIIII
1.0
0.030.05
50
FIGURE 8 - EFFECT OF GATE-50URCE VOLTAGE
ON DRAIN-50URCE RESISTANCE
200
Cg,
......
.......
c;-"'"
r-.
7.0
w
u
0
0
0.5
•
FIGURE 7 - TYPICAL CAPACITANCE
FIGURE 6 - TYPICAL FORWARD TRANSFER ADMITTANCE
7.0
B.O
O. 4
-70
V
-40
V
-10
j;7
....-
./
/
20
50
80
110
Tehannel. CHANNEL TEMPERATURE (DC)
VGS. GATE.sOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-187
140
170
MPF4391 thru MPF4393
FIGUR E 10 - EFFECT OF lOSS ON ORAIN-llOURCE
RESISTANCE AND GATE-llOURCE VOLTAGE
100
J
Tchan~.1 =25'C
90
,
~
.......
@VGS=O
SI,
/'
V<
. /~
-
7.0 !:i
an '">
./
........ 1-"
VGSl,ff
-- -
~~
5
'"
2.0 ~
V
1.0
20
30
40
50
60
70
80
90
The Zero-Gate·Voltage Drain Current (lOSS!' isthe principle deter·
minant of other J-FET characteristics. Figure 10 shows the
relationship of Gate-llource Off Voltage (VGS(off)) and Orain·
Source On Resistance Irds(on)) to lOSS. Most of the device. will
be within .±10% of the values shown in Figura 10. This data will
be useful in predicting the characteristic variations for I given
5.0 ~-' part number .
For example:
4.0 ~~
3.0
r--
.,./
10
NOTE 2
9.0
8.0 w
V
o
1
100 110 120 130 140 150
0
Unknown
'dslon) and VGS range for an MPF4392
The electrical characteristics table indicates that an MPF4392
has an lOSS range of 25 to 75 mAo Figura 10. shows rds(on)
= 52 Ohms for lOSS = 25 mA and 30 Ohms for lOSS· 75 mAo
The corresponding VGS values are 2.2 volts and 4.8 volts.
lOSS. ZERO·GATE·VOLTAGE DRAIN CURRENT ImAI
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-188
MPF4856, A
thru
MPF4861, A
CASE 29-04, STYLE 5
TO-92 (TO-226AAI
MAXIMUM RATINGS
MPF4856,A MPF4859,A
MPF4857,A MPF4860,A
Symbol MPF485B,A MPF4861,A
Rating
VOS
+40
+30
Vde
Orain-Gate Voltage
VOG
+40
+30
Vde
VGSR
-40
Reverse Gate-Source Voltage
Forward Gate Current
IGF
Total Oeviee Oissipation @ TA = 25°C
Oerate above 25°C
Po
Storage Temperature Range
Tstlt
-30
,/~~'"
Unit
Orain-Souree Voltage
23
Vde
50
mAde
360
2.4
mW
mWrC
-65to +150
°c
2 Source
JFET
SWITCHING
N-CHANNEL -
OEPLETION
Refer to 2N4856 for graphs.
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
-40
-30
-
Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(lG = 1.0 !JAde, VOS = 0)
Gate Reverse Current
(VGS = -20 Vde, VOS
(VGS = -15 Vde, VOS
(VGS = -20Vde, VOS
(VGS = -15 Vde, VOS
IGSS
=
=
=
=
MPF4856,A,
0)
MPF4859.A,
0)
0, TA = 150°C) MPF4856.A,
0, TA = 150°C) MPF4859,A,
Gate Source Cutoff Voltage
(VOS = 15 Vde, 10 = 0.5 nAde)
Vde
V(BR)GSS
MPF4856.A, MPF4857,A, MPF4858,A
MPF4859.A, MPF4860,A, MPF4861,A
MPF4857,A,
MPF4860.A,
MPF4857.A,
MPF4860,A,
MPF4858,A
MPF4861,A
MPF4858,A
MPF4861,A
-
-
-
-
-
0.25
0.25
0.5
0.5
Orain Cutoff Current
(VOS = 15 Vde, VGS = -10 Vde)
(VOS = 15 Vde, VGS = -10 Vde, TA = 150°C)
-4.0
-2.0
-0.8
10(off)
!JAde
Vde
VGS(off)
MPF4856,A, MPF4859,A
MPF4857.A, MPF4860,A
MPF4858.A, MPF4861,A
nAde
-
-10
-6.0
-4.0
0.25
0.5
nAde
!JAde
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(l)
(VOS = 15 Vdc, VGS = 0)
Orain-Souree On-Voltage
(10 = 20 mAde, VGS = 0)
(10 = 10 mAde, VGS = 0)
(10 = 5.0 mAde, VGS = 0)
mAde
lOSS
MPF4856.A, MPF4859,A
MPF4857,A, MPF4860,A
MPF4858.A, MPF4861,A
50
20
8.0
VOS(on)
MPF4856.A, MPF4859,A
MPF4857,A, MPF4860,A
MPF4858,A, MPF4861,A
100
80
Vde
-
0.75
0,5
0.5
-
25
40
60
-
SMALL-SIGNAL CHARACTERISTICS
Orain-Souree "ON" Resistance
(VGS = 0,10 = 0, 1= 1.0 kHz)
rds(on)
MPF4856,A, MPF4859,A
MPF4857,A, MPF4860,A
MPF4858.A, MPF4861,A
Input Capacitance
(VOS = 0, VGS = -10 Vdc, I = 1.0 MHz) MPF4856 thru MPF4861
MPF4856A thru MPF4861A
Ciss
Reverse Transler Capacitance
(VOS = 0, VGS = -10 Vdc, I = 1.0 MHz)
MPF4856 thru MPF4861
M PF4856A, M PF4859A
MPF4857A, MPF4858A, MPF4860A, MPF4861A
Crss
Ohms
-
pF
-
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-189
pF
18
10
8.0
4.0
3.5
•
MPF4856, A thru MPF4861, A
ELECTRICAL CHARACTERISTICS (continued) (TA - 25"C unless otherwise noted.)
I
Symbol
Min
Conditions for MPF4856,A, MPF4859,A: MPF4856, MPF4859
MPF4856A, MPF4859A
MPF4857, MPF4860
(VOO - 10 Vde, 10(on) - 20 mAde,
MPF4857A, MPF4860A
VGS(on) - 0, VGS(off) - -10 Vde)
MPF4858, MPF4861
MPF4858A. MPF4861A
td(on)
-
Rise Time
Conditions for MPF4857,A, MPF4860,A: MPF4856,A, MPF4859,A
MPF4857,A. MPF4860,A
MPF4858, MPF4861
(VOO - 10 Vde, 10(on) - 10 mAde,
MPF4858A, MPF4861A
VGS(on) - 0, VGS(off) - -6.0 Vde)
tr
Turn-Off Time
MPF4856, MPF4859
Conditions for MPF4858,A, MPF4861,A: MPF4856A, MPF4859A
MPF4857, MPF4860
MPF4857A. MPF4860A
(VOO - 10 Vde, 10(on) - 5.0 mAde,
MPF4858, MPF4861
VGS(on) - 0, VGS(off) - -4.0 Vde)
MPF4858A; MPF4861A
toff
Characteristic
Max
Unit
6.0
5.0
6.0
6.0
10
8.0
ns
3.0
4.0
10
8.0
ns
SWITCHING CHARACTERISTICS
Turn-On
Delay Time
-
-
(1) Pulse Test: Pulse Width - 100 ms, Duty Cycle'" 10%.
(2) The 10(on) values are nominal; exact values vary slightly with transistor parameters.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-190
25
20
50
40
100
80
ns
MPF6659 thru MPF6661
U308 thru U310
For Specifications, See 2N6659 Data.
CASE 27-02, STYLE 4
TO-52 (TO-206AC)
,j
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
VOS
25
Vdc
Gate-Source Voltage
VGS
25
Vdc
IG
20
mAdc
Po
500
4.0
mW
mWrC
TJ, Tstg
-65 to + 150
°c
Rating
Gate Cu rrent
Total Device Dissipation @ TA
Derate above 25°C
~
25°C
Operating and Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (TA
2 Drain
~.;.~
1 Source
2
JFET
VHF/UHF AMPLIFIERS
N-CHANNEL - DEPLETION
= 25°C unless otherwise noted. I
Characteristic
Symbol
Min
Typ
Max
Unit
V(BRIGSS
-25
-
-
V
-
-150
-150
pA
nA
-
-6.0
-4.0
-6.0
-
60
30
60
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 1.0 pA, VOS = 01
Gate Reverse Cu rrent
(VGS = -15VI
(VGS = 0, TA = 125°CI
IGSS
-
-
Gate Source Cutoff Voltage
(VOS = 10 V, 10 = 1.0 nAI
VGS(offl
-1.0
-1.0
-2.5
U308
U309
U310
-
-
V
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current(11
(VOS = 10 V, VGS = 01
lOSS
U308
U309
U310
Gate-Source Forward Voltage
(lG = 10 mA, VOS = 01
12
12
24
VGS(II
mA
-
-
1.0
10
10
10
-
20
20
18
V
SWITCHING CHARACTERISTICS
Common-Gate Forward Transconductance(1I
(VOS ~ 10 V, 10 ~ 10 rnA, 1= 1.0 kHzl
mmhos
gIg
U308
U309
U310
Common-Gate Output Conductance
(VOS = 10 V, 10 = 10 mA, 1= 1.0 kHzl
gog
-
-
250
/Lmhos
Drain-Gate Capacitance
(VGS = -10 V, VOS = 10 V, f = 1.0 MHzl
Cgd
-
-
2.5
pF
Gate-Source Capacitance
(VGS = -10 V, VOS = 10 V, f
Cgs
-
-
5.0
pF
10
-
nVv'Hz
~
1.0 MHzl
Equivalent Short-Circuit Input Noise Voltage
(VOS = 10 V, 10 = 10 mA, f ~ 100 Hzl
en
(11 Pulse test duration = 2.0 ms.
(21 See Figures 10 and 11 for Noise Figure and Power Gain information.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-191
--
U308 thru U310
FIGURE 1 - 450 MHz COMMON·GATE AMPLIFIER TEST CIRCUIT
50 n
Source
L2P~2S ~~~D
C2
C4
.-____~lIr__~--. .--~~C~61
tV DO
C1
=:
C2 '" 0.8 -- 10 pF. JFD #MVM01QW.
C3 = C4 ~ 8·35 pF Erie #539-0020.
C5'" C6 :=. 5000 pF Erie (2443-000)
C7 = 1000 pF. Allen Bradlev #FA5C
RFC = 0.33,u.H Miller #9230-30.
Ll '" One Turn #16 Cu, 1/4" 1.0. (Air Corel
L2p= One Turn #16 Cu, 1/4" 1.0 (Air Core).
L2S '" One Turn #16 Cu, 1/4" 1.0. (Air Core).
FIGURE 2 - ORAIN CURRENT and TRANSFER
CHARACTERISTICS versus GATE·SOURCE VOLTAGE
•
FIGURE 3 - FORWARD TRANSCONDUCTANCE
versus GATE·SOURCE VOLTAGE
I
0,
0
0
0
0
-'" ,VOS'10V
,
,,
I'\.
/
/6
f--
V
+25 C
0
I'
.'-.
1"-
0
~
/
" ZX
~V
"
./
V
L /
LI"':
~
/
/
~
//
./
......
-40
50
I"
/ ./
:,........-
/
.....-rl
4oC7
-55 0C//
./"
//./
+150 oC
A
...oIIl!
0
FIGURE 4 - COMMON·SOURCE OUTPUT
ADMITTANCE and FORWARD TRANSCONDUCTANCE
versus DRAIN CURRENT
......-::::
""50 0C.....
~
0
1.0
4.0
3.0
20
10 - VGS. GATE·SOURCE VOLTAGE (VOLTS)
10SS·VGS. GATE·SOURCE CUTOFF VOLTAGE (VOLTS)
/'
./
I
-I--.
+150 o C I
+25 0 C
,/
0
550C~
-,.......
L
5
'/+150 o C
~
55°C
TA"
f" 1 0 MHz
0
~250~
~
......
/
./
5
/+25 0 C
lOSS
.-
I
I
0r-- VOS'10V
TA" -55 0 C
0
5.0
5
--" '"
·2.0
·10
·30
VGS. GATE·SOURCE VOLTAGE (VOLTS)
FIGURE 5 - ON RESISTANCE and JUNCTION CAPACITANCE
versus GATE·SOURCE VOLTAGE
10
1
ROS I
~
~
w
~'"
If
70
'-'
,. ~
0
-
10
o
-10
~
/
~. /
/
,/
Cgs 4
2
C!ld
0
·90
80
70
60
50
40
30
20
VGS. GATE SOURCE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-192
120
10
U308 thru U310
FIGURE 6 - COMMON-GATE Y PARAMETER
MAGNITUDE versus FREQUENCY
30
FIGURE 7 - COMMON-GATE S PARAMETER
MAGNITUOE versus FREQUENCY
15 '21.15221
,52,1.15,,1
085 045
0060 1 00
24
079 039
0
VOS - 10 V
24
V-
10'" lOrnA
T A" 25° C
Yll
8
;:;
---
12
".
./
----
...... V
TA ." 25° C
~
067 027
06
V
061
Y12
500
300
200
I. FREQUENCY (MHz)
100
12
~
700
FIGURE 8 - COMMON-GATE Y PARAMETER
PHASE-ANGLE versus FREQUENCY
~
40 0
170 0
160 0
30 0
150 0
20 0
L
./
/
. / °11
KV
200
1\
80 0
V ......
87 0
86 0
-40 0 100 0
85 0
60 0
80 0
84 0
-80 0
60 0
300
500
I. FREQUENCY (MHz)
1'\- 160
-
-
0
-100 0
40 0
83 0
180 0
200 0
700
82°
- 120 0
1000
24
~
.....
NF
oi
rff
1. 0
30
12
14
16
18
la. QRAIN CURRENT (mA)
I'..
~
,,~
Illy
/'
40 0
"
60 0
"~,21
/'
~
Vos - 10 V
10" 10 rnA
(ill
80 0
~
100 0
20 0
200
300
500
700
1000
26
22
20
22
~g
'"~ 3.0
6.0
10
•
20 0
V
/'
'"~ 4.0
1
2. 0
8_0
090
1000
...... V
...... ~ ~
~ 5.0
1
6.0
700
I
Voi-16v
6.0 lo-IOmA
TA-25 0 C
- Circuit In Figure 1
Gpg
0
4.0
092
7.0
1
~ 5, 0
<5
z 3.0
0012
FIGURE 11 - NOISE FIGURE and
POWER GAIN versus FREQUENCY
21
...-... I'-..
094
f. FREQUENCY (MHz)
~ 6.0 -Clrcuitin Figure 1
4.0
:----
~
100
Va~-20J
:::>
0024
TA " 25 0 C
7.0 -f-450MHz
BW "'10 MHz
'"~
1121- ~
140 0
FIGURE 10 - NOISE FIGURE and
POWER GAIN versus DRAIN CURRENT
8. 0
~
100 0
120 0
VQS"lOV
10 = 10 rnA
096
12
500
200
300
I. FREQUENCY (MHz)
60 0
V
TA(" 25~ C
00
100
130 0
V
/J'2
10 o~
140 0
./
./
40 0
/1;'
2..- ./
f-'" ,.- ~
0036
versus FREQUENCY
°ll.OI2
-20 0 120 0
20 0
I~
...... ~21
,/
/
........
°22
/V
FIGURE 9 - S PARAMETER PHASE-ANGLE
00
,/
0048098
1/
ll~
/J
/
~
/
-
02 1
055 015
100
1000
0
"
VQS"lOV
10" lOrnA
073 033
~
N
,/
o
~
E
Y21
Y22
0
18
,/
t- r-- ~2
'S2i-... :"--
~
u.'
z
1
.....
......... ~
,/
V;F
.....
20
1
r--
1
60
1.0
20
o
24
50
100
200
f. FREQUENCY (MHzl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-193
--~----
300
500 700 1000
U308 thru U310
FIGURE 12 - 450 MHz IMD EVALUATION AMPLIFIER
BW (3dB) - 36.5 MHz
'0 - 10 mAde
Vos - 20 Vdc
Device case grounded
1M test tones - f1 = 449.5 MHz, 12 == 450.5 MHz
Cl = '-10 pf Johanson Air variable tnmmer.
C2, C5 = 100 pf feed thru button capacitor.
C3, C4, C6 = 0.5-6 pf Johanson Air vanable trimmer
Ll = 1/8" x 1/32" x '-5/8" copper bar
L2, L4 = Ferroxcube Vk200 choke
L3 = 1/8" x 1/32" x '-7/8" copper bar.
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with
C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point
(IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower
IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm .
•
FIGURE 13 - TWO TONE 3RD ORDER INTERCEPT POINT
0
~
w
z
F2 • 450.5 MHz
'"
-40
~
-6 0
~
-80
~
b
".,," /
oI-Fl ·449.5 MHz
-2 0
....
3RD ORDER INTERCEPT POINT.-
10;:: 10 mAde
:=
'"
~
JJET
UJ10
I
+2 oI-vos. 20 Vdc
o
-10
°v
-120
-120
FU~DAMENTAL OUTPUT"",,- V
.,..V
-100
.,..V
/'
V
Y
I
3Rd ORdER IMD OUTPUT
I
-80
-60
/
-40
V
Example of intercept point plot use:
J
-20
+20
Assume two in-band signals of -20 dBm at the amplifier input.
They will result In a 3rd order IMD signal at the output of -90
dam. Also, each signal level at the output will be -11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio liMA)
capability of 79 dB. The gain and IMA values apply only for signal
levels below compression.
INPUT POWER PER TONE (dBm)
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-194
VN10LM
CASE 29-03, STYLE 22
TO-92 (TO-226AE)
~~
MAXIMUM RATINGS
Symbol
Value
Unit
Orain-Source Voltage
Rating
VOSS
60
Vdc
Gate-Source Voltage
VGS
±30
Vdc
10
10M
0.3
1.0
Adc
1.0
B.O
Watts
mWrC
-40 to +150
·C
Drain Current -
Continuous(1)
Pulsed(2)
Total Power Oissipation @ TA = 25'C
Oerate above 25'C
Operating and Storage
Temperature Range
Po
TJ, Tstg
1 Source
TMOS FET
TRANSISTOR
(1) The Power ~issipation 01 the package may result in a lower continuous drain
current.
(2) Pulse Width", 300 p.s, Outy Cycle.
ELECTRICAL CHARACTERISTICS
N-CHANNEl -
ENHANCEMENT
(TA = 25'C unless otherwise noted.)
I
Typ
Symbol
Min
Orain-Source Breakdown Voltage
(VGS = 0, 10 = 100 p.A)
V(BR)OSS
60
-
-
Zero Gate Voltage Orain Current
(VOS = 45 V, VGS = 0)
lOSS
-
0.1
10
poAdc
Gate-Body leakage Current
(VGS = -15 V, VOS = 0)
IGSS 1
-
-
100
nAdc
Gate-Body Leakage Current
(VGS = 15 V, VOS = 0)
IGSS 2
-
-
-100
nAdc
Characteristic
Max
Unit
OFF CHARACTERISTICS
Vdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 mAl
VGS(th)
0.8
-
2.5
Vdc
On-State Orain Current
(VOS = 15 V, VGS = 10 V)
10(on)
750
-
-
rnA
Forward Transconductance
(VOS = 15 V, 10 = 500 rnA)
9fs
200
-
-
mmhos
Orain-Source On-Voltage
(VGS = 5.0 V, 10 = 200 rnA)
VOS(on)l
-
-
1.5
Vdc
Orain-Source On-Voltage
(VGS = 10 V, 10 = 500 rnA)
VOS(on)2
-
-
2.5
Vdc
Drain·Source On-Resistance
(VGS = 5.0 V, 10 = 200 rnA)
rOS(on)l
-
-
7.5
fI
Orain-Source On-Resistance
(VGS = 10 V, 10 = 500 rnA)
rOS(on)2
-
-
5.0
fI
Input Capacitance
(VOS = 25 V, VGS = 0, 1= 1.0 MHz)
Ciss
-
-
60
pF
Output Capacitance
Coss
-
-
25
pF
Reverse Transler Capacitance
(VOS = 25 V, VGS = 0 V, 1= 1.0 MHz)
Crss
-
-
5.0
pF
Turn-On Time
(VOS = 15 V, RL = 23 fI, RG = 50 fI, Yin = 20 V)
ton
-
-
10
ns
Turn-Off Time
(VOS = 15 V, RL = 23 fI, RG = 50 fI, Yin = 20 V)
toff
-
-
10
ns
(VOS = 25 V, VGS = 0, 1= 1.0 MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-195
•
VN0610LL
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VOSS
60
Vdc
VOGR
60
Vdc
Gate-Source Voltage
VGS
±40
Vdc
Drain Current
Continuous
Pulsed
10
10M
190
1000
Po
400
3.2
mW
mWI'C
TJ, Tstg
-55 to +150
'c
Drain-Gate Voltage (RGS
~
1 MOl
CASE 29-04, STYLE 22
TO-92 (TO-226AA)
3 Drain
~~
mAde
Total Power Dissipation @ TA
Derate above 25'C
~
25'C
Operating and Storage
Temperature Range
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
Maximum Lead Temperature lor
Soldering Purposes, 1/16" from case
lor 10 seconds
•
I
R8JA
312.5
'CIW
TL
300
'c
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC ~ 25'C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)OSS
60
-
-
10
500
IGSSF
-
-100
VGS(th)
0.8
2.5
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS ~ 0, 10 ~ 100 1lA)
Zero Gate Voltage Drain Current
(VOS ~ 48 V, VGS ~ 0)
(VOS ~ 48 V, VGS ~ 0, TJ ~ 125'C)
lOSS
Gate-Body Leakage Current, Forward
(VGSF ~ 30 Vdc, VOS ~ 0)
Vdc
IlAdc
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage
(VOS ~ VGS, 10 ~ 1.0 mAl
Static Drain-Source On-Resistance
(VGS ~ 10 Vdc, 10 ~ 500 mAl
(VGS ~ 10 Vdc, 10 ~ 500 mA. TC ~ 125'C)
rOS(on)
Drain-Source On-Voltage
(VGS ~ 5.0 V, 10 ~ 200 mAl
(VGS ~ 10 V, 10 ~ 500 mAl
VOS(on)
On-State Drain Current
(VGS ~ 10 V, VOS ,. 2.0 VOS(on))
Forward Transconductance (VOS ,. 2.0 VOS(on)' 10 ~ 500 mAl
Vdc
Ohm
-
5.0
9.0
-
1.5
2.5
1010n)
750
9ls
100
-
Vdc
mA
/Lmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VOS
Output Capacitance
~
25 V, VGS
I ~ 1.0 MHz)
~
a
Reverse Transfer Capacitance
Ciss
-
60
Coss
-
25
Crss
-
5.0
SWITCHING CHARACTERISTICS'
Turn-On Delay Time
Turn-Off Delay Time
(VOO ~ 15 V, 10 ~ 600 mA
Rgen ~ 25 ohms, RL ~ 23 ohms)
'Pulse Test: Pulse Width", 300 /LS, Duty Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
4-196
pF
VN2222LL
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Orain-Source Voltage
VOSS
60
Vdc
Orain-Gate Voltage (RGS = 1 MO)
VOGR
60
Vdc
VGS
±40
Gate-Source Voltage
Drain Current
Continuous
Pulsed
CASE 29-04, STYLE 22
TO-92 (TO-226AA)
,,1 ~~
Vdc
mAde
Total Power Oissipation @TA = 25°C
10
10M
150
1000
Po
400
3.2
mWrC
-55 to +150
°c
Derate above 25°C
Operating and Storage
Temperature Range
TJ, Tstg
mW
3
1 Source
TMOS FET
TRANSISTOR
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16" from case
for 10 seconds
R8JA
312.5
°CIW
TL
300
°C
N-CHANNEL -
ENHANCEMENT
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Max
Symbol
Min
V(BR)OSS
60
-
-
-
10
500
-
-100
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Vdc
(VGS = 0,10 = 100 pAl
Zero Gate Voltage Orain Current
(VOS = 4B V, VGS = 0)
(VOS = 4B V, VGS = 0, TJ = 125°C)
lOSS
Gate-Body Leakage Current, Forward
(VGSF = 30 Vdc, VOS = 0)
IGSSF
pAdc
nAdc
ON CHARACTERISTICS'
Gate Threshold Voltage
(VOS = VGS, 10 = 1.0 mAl
VGS(th)
Static Orain-Source On-Resistance
(VGS = 10 Vdc, 10 = 0.5 Adc)
(VGS = 10 Vdc, 10= 0.5 V, TC = 125°C)
rOS(on)
Orain-Source On-Voltage
(VGS = 5.0 V, 10 = 200 mAl
(VGS = 10 V, 10 = 500 mAl
VOS(on)
On-State Orain Current
(VGS = 10 Vdc, VOS ;;. 2.0 VOS(on))
Forward Transconductance
(VOS = 10 V, 10 = 500 mAl
0.6
2.5
Vdc
Ohm
-
7.5
13.5
-
1.5
3.75
Vdc
10(on)
750
-
mA
9fs
100
-
p.mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Coss
-
Crss
-
Ciss
(VOS = 25 V, VGS = 0
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS'
Turn-On Oelay Time
Turn-Off Oelay Time
(VOO = 15 V, 10 = 600 mA
Rgen = 25 ohms, RL = 23 ohms)
'Pulse Test: Pulse Width", 300 p.s, Outy Cycle'" 2.0%.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-197
60
25
5.0
pF
•
VN2222LL
V psy
1.8 f-Tl= 2SJC
1.6
VGS
110v
~ 1.4
~
/ V
0':: V
I-
i\'i 1
g§
a 0.8
~
0.6
c
.9 0.4
0.2
8V
#- v. . . . .
6V
~~
~
.9 0.2
A
10
2
1. 2
~
2. 2
VGS = 10V
1r--lo = 200 rnA
8
L
~
~
~
>
V
2
8
f.--o. 6f--
O.4
-60
-20
"I"-.,
10
f"--...
1
..........
0.95
b
~ 0.85
V
= VGS
= 1 rnA-
Vas
l'-...
~ 0.9
..........
1
1.1 S
1. 1
~ 1.0S
/
4
~
i
./
6
c
10
3
4
S
6
7
VGS, GATE SOURCE VOLTAGE (VOLTSI
Figure 2. Transfer Characteristics
2.4
~
L
,,&V
Figure 1. Ohmic Region
•
L12SoC
Vb'
4V
3V
3
4
S
6
7
VOS, DRAIN SOURCE VOLTAGE (VOLTSI
/y
/, V
i
az 0.4
SV
ill!:.
2
-'-'/.
~
;: 0.6
7V
~V
~~
-55°C/
ie
9V
./'
51.2
0.8
VOS=10V
......
r-....
l............
'" 0.8
~O.7S
+20
+60
T. TEMPERATURE (OCI
+ 100
~ 0.7
-60
+ 140
Figure 3. Temperature versus Static Drain-Source
On-Resistance
-20
0
+20
+60
T, TEMPERATURE (OCI
+100
+140
Figure 4. Temperature versus Gate Threshold Voltage
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
4-198
,l,2
3
1.
2
CASE 318-03
SOT-23 (TO-236AB)
(TO-226AC)
~
~I~~
~1
14
10
CASE 606-04
TO-91
CASE 607-05
,- -
J'_~
Small-Signal Tuning,
Switching and
Zener Diodes
1
1
CASE 632-08
(To-l16)
CASE 620-09
1
1
CASE 648-08
CASE 646-06
16
14#
1
CASE 751A-02
So-14
16#
1 CASE 7518-03
SO-16
Motorola's dual, quad, and multiple transistors and diodes
have been implemented with discrete chips that have proven to
be the most popular for all-around performance at low cost.
Packaging options include plastic and ceramic DIP's, ceramic
flat pak, axial lead and surface mount packages.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-1
•
SILICON. EPICAP DIODES
lN5139,A
· .. designed for electronic tuning and harmonic-generation applications,
and providing solid-state reliability to replace mechanical tuning methods.
thru
·lN5148, A
• Guaranteed High-Frequency Q
• Guaranteed Wide Tuning Range
• Guaranteed Temperature Coefficient
2
• Standard 10% Capacitance Tolerance
• Complete Typical Design Curves
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Volts
Reverse Voltage
CASE 51-02
(DO-204AA)
VR
60
Forward Current
IF
250
mA
RF Power Input"
Pin
5.0
Watts
Device Dissipation @ TA = 25°C
Derate above 25°C
Po
400
2.67
mW
mWI"C
Device Dissipation @ TC = 25°C
Derate above 25°C
Pc
2.0
13.3
Watts
mWI"C
Junction Temperature
TJ
+175
°c
-65 to +200
°c
Storage Temperature Range
Tstg
*The RF power Input rating assumes that an adequate heatsmk
IS
6_8-47 pF EPICAP
VOLTAGE-VARIABLE
CAPACITANCE DIODES
provided.
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR
=
10 !LAde)
Reverse Voltage Leakage Current (VR
(VR
Series Inductance (I
•
Case Capacitance (I
Symbol
Min
Typ
V(BR)R
60
70
-
-
= 55 Vdc, TA = 25°C)
= 55 Vdc, TA = 150°C)
IR
= 250 MHz, L = 1/16")
= 1.0 MHz, L = 1/16")
Diode Capacitance Temperature Coefficient (VR
LS
= 4.0 Vdc, 1 =
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
1.0 MHz)
01 Merit
VR = 4.0 Vdc,
f=50MHz
TCe
Q, Figure
0.02
20
0.25
-
200
300
5.0
-
Cc
Max
a
VR = 4.0 Vdc, 1 = 1.0 MHz
Unit
Vdc
!LAde
nH
pF
ppml"C
TR, Tuning Ratio
C.vCsO
1 = 1.0 MHz
Device
Min
Typ
Max
Min
Min
Typ
Min
Typ
lN5139
lN5139A
lN5140
lN5140A
6.1
6.5
9.0
9.5
6.8
6.8
10
10
7.5
7.1
11
10.5
350
350
300
300
0.37
0.37
0.38
0.38
0.4
0.4
0.41
0.41
2.7
2.7
2.8
2.8
2.9
2.9
3.0
3.0
lN5141
lN5141A
lN5142
lN5142A
10.8
11.4
13.5
14.3
12
12
15
15
13.2
12.6
16.5
15.7
300
300
250
250
0.38
0.38
0.38
0.38
0.41
0.41
0.41
0.41
2.8
2.8
2.8
2.8
3.0
3.0
3.0
3.0
lN5143
lN5143A
lN5144
lN5144A
16.2
17.1
19.8
20.9
18
18
22
22
19.8
18.9
24.2
23.1
250
250
200
200
0.38
0.38
0.43
0.43
0.41
0.41
0.45
0.45
2.8
2.8
3.2
3.2
3.0
3.0
3.4
3.4
lN5145
lN5145A
lN5146
lN5146A
24.3
25.7
29.7
31.4
27
27
33
33
29.7
28.3
36.3
34.6
200
200
200
200
0.43
0.43
0.43
0.43
0.45
0.45
0.45
0.45
3.2
3.2
3.2
3.2
3.4
3.4
3.4
3.4
lN5147
lN5147A
lN5148
lN5148A
36.1
37.1
42.3
44.7
39
39
47
47
42.9
40.9
51.7
49.3
200
200
200
200
0.43
0.43
0.43
0.43
0.45
0.45
0.45
0.45
3.2
3.2
3.2
3.2
3.4
3.4
3.4
3.4
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
5-2
1N5139, A thru 1N5148, A
PARAMETER TEST METHODS
1.
Ls, SERIES INDUCTANCE
(Boonton Electronics Model 33AS8).
LS is measured on a shorted package at 250 MHz using
an impedance bridge (Boonton Radio Model 250A RX
Meter). L = lead length.
2.
6. a, DIODE CAPACITANCE REVERSE VOLTAGE SLOPE
The diode capacitance, CT (as measured at VR = 4.0
Vdc, f = 1.0 MHz) is compared to CT (as measured at
VR = 60 Vdc, f = 1.0 MHz) by the following equation
which defines a.
Ce, CASE CAPACITANCE
Cc is measured on an open package at 1.0 MHz using
a capacitance bridge (Boonton Electronics Model 75A
or equ ivalent).
a = log CT(4) - log CT(60)
log 60 - log 4
3. CT, DIODE CAPACITANCE
Note that a CT versus VR law is assumed as shown in
the following equation where Cc is included.
(CT = Cc + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A
or equivalent).
Q,
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = -65°C with eTat VR = 4.0 Vdc, f
= 1.0 MHz, TA = +85°C in the following equation
which defines TCC:
FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and substituting in the following equations:
Q = 21TfC
G
FIGURE 1 -
100
70
50
30
r--
~
fil
......
-
r-....
I.s
FIGURE 2 -
~
r--
V
>--- IN5148 V
FIGURE OF MERIT versus REVERSE VOLTAGE
TA
f
25°C
50 MHz
3000
/"
~
",.
V ""
",.
~~~
15
r---ro
" 1000
~
~ 700
r:-.
V
V
d
..........
500
300
r---
I
3.0
5.0 7.0 10
VR• REVERSE VOLTAGE (VOLTS)
5060
30
...
~V
..........
............
~ r--
",.
.-"" V
100
1.0
.,.
./
./
!--- IT 39
IN5139 IN5144 _
IN5148
II
7 10
YR. REVERSE VOLTAGE (VOLTS)
30
50 60
FIGURE 4 -
NORMALIZED FIGURE OF MERIT
versus JUNCTION TEMPERATURE
FIGURE 3 -
NORMALIZED DIODE CAPACITANCE
versus JUNCTION TEMPERATURE
140
1.020
VV
1.010
i1.000
/
V
130
~
,.15
V
§'"
is
./
~0.990
!!l
~
'"d
/
.v
S
~O.980
I
IVR~4VdC
TA ~ 25°C
I
0.960
-100 -75
-so
120
'"
~
110
~
100
iB
NORMALIZED TO C.
0.970
CT(25°C)
;;:
IN5144
I
I·~
10000
7000
5000
.............
10
7
ICT(+850 C) - CT(-65°C)
85 + 65
=
C
25'C
I MHz
f
~
§
TC
DIODE CAPACITANCE versus
REVERSE VOLTAGE
r.
Va
7. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TR is the ratio of CT measured at 4.0 Vdc divided by
CT measured at 60 Vdc.
5.
~
CT =
4. TR, TUNING RATIO
90
+75
+100
VR~4Vdc
f~ 50 MHz
I
-65 -50
-25
~ r-....
I
+25
+so
TJ • JUNCTION TEMPERATURE (OC)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-3
~
PERCENT OF Q@ 25°C
80
70
-25
0
+25
+50
TJ • JUNCTION TEMPERATURE ('C)
""
+75 +85
•
1N5139, A thru 1N5148, A
FIGURE 5 - REVERSE CURRENT versus REVERSE
BIAS VOLTAGE
FIGURE 6 - FIGURE OF MERIT versus FREQUENCY
2000
I
/
32
V
+7S"C
o
-
~
o
-10
V
-20
-30
/
15
'"
I!;
-40
700
~
r-.
~
500
r----
~
-so
,,
-... :--...
~
............
Id300
L
-/
/
1000
>
V
INS1391~ ~ r
INSI44 / ' "
INSI48
~
.......
f'
.........I' ~ ....
I"- 'I"
,
v. = Hdc
100
-60
10
v•• REVERSE VOlTAGE (VOlTS)
"'I"
30
t. FREQUENCY (MHz)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-4
50
70
100
SILICON EPICAP DIODES
IN5441A,B
· .. epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic-generation applications in AM through
UHF ranges, providing solid-state reliability to replace mechanical tuning
methods.
thru
IN5456A,B
• Excellent Q Factor at High Frequencies
2
• Guaranteed Capacitance Change - 2.0 to 30 V
• Guaranteed Temperature Coefficient
• Capacitance Tolerance -
CASE 51-02
(DO-204AAI
10% and 5.0%
• Complete Typical Design Curves
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts
Device Dissipation @ TA = 25"C
Derate above 25"C
Po
400
2.67
mW
mWrC
TJ
+175
"C
Tstg
-65 to +200
"C
Operating Junction Temperature Range
Storage Temperature Range
6.8-100 pF
30 VOLTS
VOLTAGE-VARIABLE
CAPACITANCE DIODES
*lndlc8tes JEDEC RegIstered Data.
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (lR
=
10 ~dc)
Reverse Voltage Leakage Current (VR
(VR
Series Inductance (f
Case Capacitance (f
= 25 Vdc, TA =
= 25 Vdc, TA =
25"C)
150"C)
Symbol
Min
V(BRIR
30
Diode Capacitance Temperature Coefficient
(Note 6) (VR = 4.0 Vdc, f = 1.0 MHz)
Min
(Nom -10%)
lN5441A
lN5442A
lN5443A
lN5444A
-
LS
Cc
0.1
TCC
-
300
Unit
Vdc
0.02
20
~dc
4.0
10
nH
0.17
0.25
pF
400
ppml"C
Figure of Merit
VR = 4.0Vdc
f = 50 MHz
TR, Tuning Ratio
CT, Diode Capacitance (1)
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
Max
-
-
IR
= 250 MHz, lead length = 1/16")
= 1.0 MHz, lead length = 1116")
Typ
Q,
~/CJO
f = 1.0 MHz
Nom
Max
(Nom +10%)
Min
Max
Min
6.1
7.4
9.0
10.8
6.8
8.2
10
12
7.5
9.0
11
13.2
2.5
2.5
2.6
2.6
3.1
3.1
3.1
3.1
450
450
400
400
lN5445A
lN5446A
lN5447A
lN5448A
13.5
16.2
18
19.8
15
18
20
22
16.5
19.8
22
24.2
2.6
2.6
2.6
2.6
3.1
3.1
3.1
3.2
400
350
350
350
lN5449A
lN5450A
lN5451A
lN5452A
24.3
29.7
35.1
42.3
27
33
39
47
29.7
36.3
42.9
51.7
2.6
2.6
2.6
2.6
3.2
3.2
3.2
3.2
350
350
300
250
lN5453A
lN5454A
lN5455A
lN5456A
50.4
61.2
73.8
90
56
68
82
100
61.6
74.8
90.2
110
2.6
2.7
2.7
2.7
3.3
3.3
3.3
3.3
200
'175
175
175
(1) To order deVices WIth CT Nom ±5.0% add Suffix B.
*Indicates JEOEC Registered Data.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-5
•
1N5441A, B thru 1N5456A,. B
PARAMETER TEST METHODS
1.
Ls, SERIES INDUCTANCE
5.
lS is measured on a shorted package at 250 MHz using
an impedance bridge (Boonton Radio Model 250A RX
Meter or equivalent).
a. FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and substituting in the following equations:
.Q = 2".fC
2. CC. CASE CAPACITANCE
G
(Boonton Electronics Model 33AS8 or equivalent).
Cc is measured on an open package at 1.0 MHz using
a capacitance bridge (Boonton Electronics Model 75A
or equivalent).
6. TCc. DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
3. CT. DIODE CAPACITANCE
TCC is guaranteed by comparing CT at VR = 4.0 Vdc.
f = 1.0 MHz. TA = -65°C with CTat VR = 4.0 Vdc. f
= 1.0 MHz. TA = +85°C in the following equation.
which defines TCC:
(CT = Cc + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A
or equivalent).
4. TR. TUNING RATIO
TC
TR is the ratio of CT measured at 2.0 Vdc divided by
CT measured at 30 Vdc.
= ICT(+850 C) - CT(-WC)
C
85 + 65
I.~
.
CT(25°C)
Accuracy limited by CT measurement to ± 0.1 pF.
FIGURE 1 - NORMAUZED DIODE CAPACITANCE
versus JUNCTION TEMPERATURE
1.04B
~ 1.03B
z
,
~
~ 1.01 B
w
g
1.00&
~4.0Vd'
1_
VR-30Vd,
Q
~ 0.99B
!>!
j 0.98
i
~
VR - 2.0 Vd,
~ 1.02B
B
~
0.97B
....9 ~
;,r
0.96B /
-75
-50
-25
+25
+50
+75
+100
+125
TJ. JUNCT10N TEMPERATURE ,oCI
TYPICAL DEVICE PERFORMANCE
FIGURE 2 - DIODE CAPACITANCE versus REVERSE VOLTAGE
1000
500
TA=250 C
=
'-1.OMHz-
200
100
lN6456A
50
20
lN6452A
lNU§lI;
10
lNU45A
5. 0
lN5441A
2.0
1.0
0.1
0.2
0.5
1.0
2.0
5.0
VR. REVERSE VOLTAGE 'VOLTSI
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
5-6
10
20
30
1N5441A, B thru 1N5456A, B
FIGURE 3 -
FIGURE OF MERIT versus REVERSE VOLTAGE
FIGURE 4 - FIGURE OF MERIT versus FREQUENCY
3000
2000
10.000
sooo -T. ~ 2S'C
...
~
'"
-
f
~
I NS44IA .7'" ~
2000
V ....
~
0
w
'"=>
"'u::
cd
-..:;
1000
SOMHz
1000
I-
~
f"1'
INS4S0'~
'o"
g
V
u...
500
-
TI'=2SoCVR = 4.0 Vdc
.........
........
300
200
INS44IA
......
w
sao
......-
200
100
1.0
INS4S6A -::;:; j;:;-"
r-
-20
3.0
---
100
u::
a
IN545BA
30
2a
r-
II
SO
7a
10
Ia
10
20
20
30
VR. REVERSE VOLTAGE {VOLTS)
2.0
1.0
O.SO
0.20
0.10
T A. -125 0 C
-,..-
-
~
o
I
?
w
0.02
0.0 I
S.O
-
~
IS
20
VR. REVERSE VOLTAGE (VOLTS)
INS44IA.............
10 B
1.0 0
~
0.9 4
~
088
~
0.8
2L
0.7
6"---
!
I
10
200 2S0
0.)0
2S
I
1.1 2
c:I
~
TA = 75.J
TA = 25'C
O.OS
100
FIGURE 6 - FORWARD VOLTAGE versus
FORWARD CURRENT
I
20
10
S.O
70
IN5450A~
f. FREQUENCY {MHz)
FIGURE 5 - REVERSE CURRENT versus REVERSE
BIAS VOLTAGE
100
SO
SO
"
.-----
a
30
--
.-/f
/
.",..- V
.",..-
7S
.-
V
v-r
.-V
~BA
I
I
I so
22S
300
37S
IF. FORWARD CURRENT {mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-7
I NsisOA
V
42S
SOO
•
lN5461A,B
thru
lN5476A,B
SILICON EPICAP DIODES
· .. a PREMIUM line of epitaxial, passivated, abrupt-junction tuning diodes
for critical and sophisticated frequency control applications through the UHF
range.
2
• High Q at High Frequencies
• Guaranteed High Capacitance Tuning Range
CASE 51·02
(DO·204AA)
• Excellent Unit-to-Unit Uniformity
• Guaranteed Temperature Coefficient
• Capacitance Tolerance -
10% and 5.0%
• Complete Typical Design Curves
*MAXIMUM RATINGS
Svmbol
Value
Unit
Reverse Voltage
VR
30
Volts
Device Dissipation @ TA = 25°C
Derate above 25°C
Po
400
2.67
mW
mWrC
TJ
+175
°c
Tstg
-65 to +200
°c
Rating
Operating Junction Temperature Range
Storage Temperature Range
6.8-100 pF
30 VOLTS
VOLTAGE·VARIABLE
CAPACITANCE DIODES
*Indlcates JEDEC Registered Data.
*ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (lR
=
10 !LAde)
Reverse Voltage Leakage Current IVR
IVR
Series Inductance If
•
Case Capacitance If
= 25 Vdc, TA = 25°C)
= 25 Vdc, TA = 150°C)
Svmbol
Min
VIBR)R
30
LS
-
Cc
TCC
IR
= 250 MHz, lead length = 1/16")
= 1.0 MHz, lead length = 1116")
Diode Capacitance Temperature Coefficient
INote 6) IVR = 4.0 Vdc, f = 1.0 MHz)
Cr, Diode Capacitance (1)
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
Min
(Nom -10%)
lN5461A
lN5462A
lN5463A
lN5464A
6.1
7.4
9.0
10.8
lN5465A
lN5466A
lN5467A
lN5468A
TVp
-
Max
Unit
-
Vdc
0.02
20
!LAde
4.0
10
nH
0.1
0.17
0.25
pF
-
300
400
ppmrC
-
Figure of Merit
VR = 4.0Vdc
f=50MHz
TR, Tuning Ratio
Q,
C2/C30
f = 1.0 MHz
Nom
Max
(Nom +10%)
Min
Max
Min
6.8
8.2
10
12
7.5
9.0
11
13.2
2.7
2.8
2.8
2.8
3.1
3.1
3.1
3.1
600
600
550
550
13.5
16.2
18
19.8
15
18
20
22
16.5
19.8
22
24.2
2.8
2.9
2.9
2.9
3.1
3.1
3.1
3.2
550
500
500
500
lN5469A
lN5470A
lN5471A
lN5472A
24.3
29.7
35.1
42.3
27
33
39
47
29.7
36.3
42.9
51.7
2.9
2.9
2.9
2.9
3.2
3.2
3.2
3.2
500
500
450
400
lN5473A
lN5474A
lN5475A
lN5476A
50.4
61.2
73.8
90
56
68
82
100
61.6
74.8
90.2
110
2.9
2.9
2.9
2.9
3.3
3.3
3.3
3.3
300
250
225
200
(11 To order deVices with CT Nom :t 5.0% add SuffiX B.
*Indicates JEDEC Registered Data.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-8
1N5461A. B thru 1N5476A. B
PARAMETER TEST METHODS
1.
!.s. SERIES INDUCTANCE
5.
LS is measured on a shorted package at 250 MHz using
an impedance bridge (Boonton Radio Model 250A RX
Meter or equivalent).
Q = 21TfC
G
(Boonton Electronics Model 33AS8 or equivalent).
Cc is measured on an open package at 1.0 MHz using
a capacitance bridge (Boonton Electronics Model 75A
or equivalent).
~.
FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and substituting in the following equations:
2. CC. CASE CAPACITANCE
3.
Q.
6. TCC. DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
DIODE CAPACITANCE
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = -65°C with CT at VR = 4.0 Vdc, f
= 1.0 MHz. TA = +85°C in the following equation,
which defines TCC:
(CT = Cc + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A
or equivalent).
4. TR. TUNING RATIO
TC
TR is the ratio of CT measured at 2.0 Vdc divided by
CT measured at 30 Vdc.
= ICT(+850 C) - CT(-55°C)
C
85 + 55
I'~
CT(25°C)
Accuracy limited by CT measurement to ±0.1 pF.
FIGURE 1 - NORMALIZED DIODE CAPACITANCE
versus JUNCTION TEMPERATURE
1046
~ 1036
~
VR' 2.0 Vdc
;:: 1.026
U
«
5 1 016
....,~
w
§
o
1006
~ 0.986
Z
•
VR;: 30 Vdc
~ 0996
o
~1=-
0.976
0966
-75
-
0
:/v
-50
#
~
/'
-25
+25
+50
+15
+100
+125
TJ. JUNCTION TEMPERATURE IOC)
TYPICAL DEVICE PERFORMANCE
FIGURE 2 - DIODE CAPACITANCE versus REVERSE VOLTAGE
1000
TA' 250 C
f -1.0 MHz
500
200
100
IN5476A
==
50
lN5472A=
20
IN5470A-
10
IN5465A~
5.0
IN5461A=
2.0
1.0
0.1
0.2
0.5
1.0
2.0
40
5.0
VR, REVERSE VOLTAGE {VOLTS}
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-9
10
20
30
1N5461A, B thru 1N5476A; B
FIGURE 3 - FIGURE. Of MERIT versus REVERSE VOLTAGE
. FIGURE 4 lOOO
2000
10.000
...
,.~
5000 -TA=25 DC
f=50MHz
IN5461A-:;;7" " - -
0
.....-
"''"
to
u:"
d
1000
500
200
100 ~
1.0
-2.0
i-"'"
IN5~701A i-"'"
,.~
".
~
0
"''"
to
"
u:
IN5476A
d
-
--
~
~
1000
...
2000
~
FIGURE OF MERIT versus FREQUENCY
500
:.....
lOO
200
r--
100
100
50
20
10
!-"
5.0
2.0
1.0
0.50
•
~
0.20
0.10
0.05
0.02
0.0 I
5.0
IN546IA
'"I'"
.......
50
lO
20
l.O
5.0
7.0
10
10
10
20
20
lO
50
~
o
2
~
TA' 75DC
........
~
g
-
= 25DC
-~
15
20
VR. REVERSE VOLTAGE (VOLTS)
200 250
I
1.1 2
'N54~'A / "
1.06
1.00
0.94
Q
TA
100
FIGURE 6 - FORWARD VOLTAGE versus
FORWARD CURRENT
TA = 125 DC
---
70
f. FREQUENCY (MHz)
REVERSE CURRENT versus REVERSE
BIAS VOLTAGE
-
10
......
IN5476A= IN5470A.
VR. REVERSE VOLTAGE (VOLTS)
FIGURE 5 -
TA=25DCVR = 4.0 Vdc.
IX
~
~
0.88
0.82 /
0.7 6~
0.70
25
....-
30
V-
0
....- V
l..--
~--- f.--"
75
/
IN5\)OA
--~A
bd
.......
...-...--
I
150
l75
225
300
IF. FORWARD CURRENT (mAl
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-10
./"f
,/
425
500
MAXIMUM RATINGS
Rating
BAL99L
Symbol
Value
Unit
Continuous Reverse Voltage
VR
70
Vdc
Peak Forward Current
IF
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
ROJA
556
"C/W
Po
300
mW
2.4
mWI"C
Anode
ROJA
417
"C/W
30
TJ, Tst~
-55to +150
"C
CASE 318-03 STYLE 17
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Charac:teristic
Total Device Dissipation FR-5 Board, *
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA
Derate above 25"C
=
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*FR-5 = 1.0 x 0.75 x 0.062 in.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Cathode
.,
02
SWITCHING DIODE
DEVICE MARKING
MBAL99L = TFX
I
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Symbol
Charac:teristic
Min
Max
-
2.5
30
50
70
-
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 70 V)
(VR = 25 V, TJ = 150"C)
(VR = 70 V, TJ = 150"C)
IR
Reverse Breakdown Voltage
(lR = 100 p.A)
V(BR)
Forward Voltage
(IF = 1.0 rnA)
(IF = 10 rnA)
(IF = 50 rnA)
(IF = 150 rnA)
VF
Recovery Current
(IF = 10 rnA, VR
Os
-
CD
= 5.0 V,
RL
= 500 (})
Reverse Recovery Time
(IF = IR = 10 rnA, RL
=
100 n, measured at IR
=
V
mV
-
-
Diode Capacitance
(VR = 0, f = 1.0 MHz)
p,A
715
855
1000
1250
45
pC
-
1.5
pF
trr
-
6.0
ns
VFR
-
1.75
V
1.0 rnA)
Forward Recovery Voltage
(IF = 10 rnA, tr = 20 ns)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-11
•
MAXIMUM RATINGS
Symbol
Value
Continuous Reverse Voltage
VR
75
Vdc
Peak Forward Current
IF
200
mAde
IFM(surae)
500
mA
Rating
Peak Forward Surge Current
Unit
BAS16L
CASE 318-03, STYLE 8
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 2S'C
Thermal Resistance Junction to Ambient
Symbol
Max
Unit,
Po
225
mW
1.8
mWf'C
R8JA
556
'CIW
Po
300
mW
2.4
mWf'C
417
.c!w
-55 to +150
'C
R8JA
Junction and Storage Temperature
TJ, Tst!!
*FR-5 = 1.0 x 0.75 x 0.062 on.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3 0>---+144--0
Cathode
1
Anode
SWITCHING DIODE
DEVICE MARKING
t MBAS16L = A6X
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
t
Min
Max
-
1.0
50
30
75
-
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 V)
(VR = 75 V, TJ = 150'C)
(VR = 25 V, TJ = 150'C)
IR
Reverse Breakdown Voltage
(lBR = 100/LA)
V(BR)
Forward Voltage
(IF = 1.0 mAl
(IF = 10 mAl
(IF = 50 mAl
(IF = 150 mAl
VF
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mA, RL
Stored Charge
(IF = 10 mA to VR
=
=
pA
V
mV
-
715
855
1000
1250
CD
-
2.0
pF
VFR
-
1.75
V
trr
-
6.0
ns
aS
-
45
pC
50!l)
5.0 V, RL
=
500!l)
FIGURE 1 -
Recovery Time Equivalent Test Circuit
INPUT SIGNAL
(IF
Notes: 1. A 2.0 kG variable resistor adjusted lor a Forward Current (IF) 01 lOrnA.
2. Input pulse is adjusted so IR(peak) is equal to lOrnA.
3. tp» trr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-12
OUTPUT PULSE
10 mA; measured
at iR(REC) = 1.0 mAl
= IR =
MAXIMUM RATINGS
Unit
Symbol
Value
Reverse Voltage
VR
70
Vde
Forward Current
IF
150
mAde
IFM(surge)
500
mAde
Rating
Peak Forward Surge Current
BAV99L
CASE 318-03, STYLE 11
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWI"C
R8JA
556
°cm
Po
300
mW
2.4
mWI"C
R8JA
417
°cm
TJ, Tst~
-55 to +150
°C
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25°C
=
25°C
Anode
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Cathode/Anode
'FR-5 = 1.0 x 0.75 x 0.062 In.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DUAL SERIES
SWITCHING DIODES
DEVICE MARKING
I BAV99L = A7
I
ELECTRICAL CHARACTERISTICS (TA
=
Cathode
'o---·--r~--~·~02
25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 /LA)
V(BR)
70
Reverse Voltage Leakage Current (VR = 70 Vde)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vde, TJ = 150°C)
IR
-
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD
= 1.0 mAde)
= 10 mAde)
= 50 mAde)
= 150 mAde)
Reverse Recovery Time (IF = IR = 10 mAde, iR(REC)
Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
VF
Forward Voltage (IF
(IF
(IF
(IF
FIGURE 1 -
= 1.0 mAde) (Figure 1)
trr
VFR
-
Vde
!LAde
-
-
2.5
30
50
-
1.5
pF
-
715
855
1000
1250
mVde
6.0
ns
1.75
V
-
Recovery Time Equivalent Test Circuit
)NPUT SIGNAL
(IF
Notes: 1. A 2.0 kG variable resistor adjusted for a Forward Current (IF) of lOrnA.
2. Input pulse is adjusted so IR(peak) is equal to 10 rnA.
3. tp. trr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-13
OUTPUT PULSE
IR = 10 mA; measured
at iR(REC) = 1.0 mAl
=
•
BZX84C4V7L
thru
MAXIMUM RATINGS
BZX84C33L
Rating
CASE 318-03, STYLE 8
SOT-23 (TO-236AB)
Voltage Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
PD
225
mW
I.B
mWrC
ROJA
556
°CIW
PD
300
mW
2.4
mWrC
R/IJA
417
°CIW
TJ, Tstll
-55 to +150
°C
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Unit
3
o--)-+~.--o
Cathode
1
Anode
ZENER DIODES
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
-
0.9
Vdc
-
3.0
2.0
1.0
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAde)
•
VF
BZXB4C Series
Reverse Voltage Leakage Current
(VR = 2.0 Vdc)
IR
BZXB4C4V7L
BZX84C5V1L
BZXB4C5V6L
pAdc
-
(VR
= 4.0 Vdc)
BZX84C6V2L
BZXB4C6VBL
(VR
= 5.0 Vdc)
BZXB4C7V5L
BZX84CBV2L
(VR
(VR
(VR
(VR
= 6.0 Vdc)
= 7.0 Vdc)
= B.O Vdc)
= 0.70 VZ)
BZX84C9V1L
BZXB4Cl0L
BZXB4Cll L, C12L, C13L
BZXB4C15L to BZXB4C33L
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-14
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.05
BZX84C4V7L thru BZX84C33L
ZENER VOLTAGE
VZ3(V)
4 VZ/4 T(nV/k)
Device
Marking
'Z3(mA)
Min
Max
ZZT1(0)
ZZT2(O)
ZZT3(O)
Min
Max
BZX84C4V7L
ZI
20
4.5
5.4
80
500
15
-3.5
0.2
BZXS4C5V1L
Z2
20
5.0
5.9
60
480
15
-2.7
1.2
BZX84C5V6L
Z3
20
5.2
6.3
40
400
10
-2.0
2.5
BZXS4C6V2L
Z4
20
5.8
6.8
10
150
6
0.4
3.7
BZXS4C6V8L
Z5
20
6.4
7.4
15
SO
6
1.2
4.5
BZX84C7V5L
Z6
20
7.0
8.0
15
80
6
2.5
5.3
BZX84C8V2L
Z7
20
7.7
8.8
15
SO
6
3.2
6.2
BZX84C9V1L
Z8
20
8.5
9.7
15
100
8
3.8
7.0
BZX84Cl0L
Z9
20
9.4
10.7
20
150
10
4.5
8.0
BZX84CllL
VI
20
10.4
11.8
20
150
10
5.4
BZX84CI2L
V2
20
11.4
12.9
25
150
10
6.0
BZX84C13L
V3
20
12.5
14.2
30
170
15
7.0
11
BZX84C15L
V4
20
13.9
15.7
30
200
20
9.2
13
BZX84C16L
V5
20
15.4
17.2
40
200
20
10.4
14
BZX84C1SL
V6
20
16.9
19.2
45
225
20
12.4
16
BZX84C20L
Y7
20
1S.9
21.4
55
225
20
14.4
18
BZX84C22L
V8
20
20.9
23.4
55
250
25
16.4
20
9.0
10
BZX84C24L
V9
20
22.9
25.7
70
250
25
18.4
22
BZX84C27L
Vl0
10
25.2
29.3
80
300
45
21.4
25.3
BZX84C30L
VII
10
28.1
32.4
SO
300
50
24.4
29.4
BZX84C33L
V12
10
31.1
35.4
SO
325
55
27.4
33.4
Device
Marking
'ZI(mA)
Min
Max
'ZI(mA)
Min
Max
BZX84C4V7L
ZI
5
4.4
5.0
1
3.7
4.7
BZX84C5V1L
Z2
5
4.S
5.4
1
4.2
5.3
BZX84C5V6L
Z3
5
5.2
6.0
1
4.S
6.0
BZXS4C6V2L
Z4
5
5.8
6.6
1
5.6
6.6
VZ2(V)
VZ1(V)
BZX84C6VSL
Z5
5
6.4
7.2
I
6.3
7.2
BZX84C7V5L
Z6
5
7.0
7.9
1
6.9
7.9
SZXS4CSV2L
Z7
5
7.7
8.7
I
7.6
S.7
BZX84C9V1L
ZS
5
8.5
9.6
I
S.4
9.6
BZX84Cl0L
Z9
5
9.4
10.6
1
9.3
10.6
BZX84Cl1L
VI
5
10.4
11.6
1
10.2
11.6
BZX84CI2L
V2
5
11.4
12.7
1
11.2
12.7
BZXS4C13L
V3
5
12.4
14.1
1
12.3
14
BZXS4C15L
V4
5
13.8
15.6
1
13.7
15.5
BZX84CI6L
V5
5
15.3
17.1
1
15.2
17
BZXS4C1SL
V6
5
16.8
19.1
I
16.7
19
21.1
BZX84C20L
Y7
5
IS.S
21.2
I
IS.7
BZX84C22L
VS
5
20.8
23.3
I
20.7
23.2
BZX84C24L
V9
5
22.8
25.6
I
22.7
25.5
BZX84C27L
Vl0
2
25.1
2S.9
0.5
25
2S.9
BZX84C30L
VII
2
2S
32
0.5
27.8
32
BZX84C33L
V12
2
31
35
0.5
30.S
35
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-15
•
MAXIMUM RATINGS (@ 25°C Free-Air Temperature unless otherwise noted)
Symbol
MAD130
MAD1103
MAD1107
MAD1108
Unit
VRM
40
50
50
Vdc
SteadY-State Reverse
Voltage
VR
25
25
40
Vdc
Peak Forward Current at
(or below) 25°C Free-Air
Temperature(1 )
IFM
Rating
Peak Reverse Voltage(l)
MAD130, MADll03
MADll07, MADll08
~1
I_
mA
500
".:"""1
1~
10
MAD1107F
CASE 607-05
MAD1103F
CASE 606-04
Continuous Forward
Current at (or below)
25°C Free-Air
Temperature(2)
400
IF
mA
J,m
I
Continuous Power
Dissipation at (or below)
25°C Free-Air
Temperature(3)
Po
Operating Free-Air
Temperature Range
TA
-65 to + 125 -65to +125 -55to +150 °C
Storage Temperature
Range
Tstg
-65to +150 -65to +150 -65to +175 °C
600
Lead Temperature 1/16"
from Case for 10
Seconds
mW
MAD1106C
CASE 620-09
°C
260
1
MAD130C
MAD1103C, MAD1107C
CASE 632-08
MAD130P
MAD1103P, MAD1107P
CASE 646-06
MAD1108P
CASE 648-08
MAD1108F
CASE 650-05
MONOLITHIC DIODE ARRAYS
NOTES:
1. These values apply for PW '" 100 p.s, duty cycle", 20%.
2. Derate linearity to + 125°C temperature at rate of 3.2 mAl"C.
3. Derate linearity to + 125°C temperature at rate of 6.0 mWfC.
PACKAGE
CERAMIC
CSuffix
•
Pin
Connection
Rof.No.
MADI30
Dual lO·Diode Array
3
MAD1103
Dual 8·Diode Array
5
Device
PlAS11C
P Suffix
OPTIONS
FLAT CERAMIC
FSuffix
CERAMIC
CSuffix
Pin
Connection
ReI. No.
Cose
~6
-
-
646-06
4
606·04
case
Pin
Connection
ReI.No.
C...
632·08
3
632·08
5
Device
MADll07
Dual 8·Diode Array
MAD1108
B-Diode Arrey
Pin
Connection
Rei. No.
2
I
PlAS11C
PSuflix
Case
Pin
Connection
ReI. No.
632·08
2
620'()9
I
FLAT CERAMIC
FSuffix
Case
Pin
Connection
Rei. No.
Case
646-06
2
607·05
646-08
I
650·05
PIN CONNECTION DIAGRAMS
2
Dual 8-Dlode Array
14-Prn Package
a-Diode Array
16-Pm Package
IIIII!!I
Case 620, Case 648, Case,6S0
3
4
Dual 1O-Dlode Array
14-Pm Package
Dual a-Diode Array
10-Prn Package
5
Dual 8-Dlode Array
14-Prn Package
-PinS 4,6,10,13 = NC
Case 632, Case 646
Case 606
Case 632, Case 646
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-16
MAD130, MAD1103, MAD1107, MAD1108
ELECTRICAL CHARACTERISTICS
(@ 25°C Free-Air Temperature)
Limit
Symbol
Characteristic
Reverse Breakdown Voltage(l)
(lR = 10pA)
Min
Max
V(BR)
MAD130
MADll03/1107l110S
Static Reverse Current
(VR = 40 V)
IR
Static Forward Voltage
(IF = 100 rnA)
(IF = 500 mA)(2)
VF
40
50
-
-
0.1
-
1.1
1.5
VFM
SWITCHING CHARACTERISTICS
Vdc
-
5.0
Vdc
(@ 25°C Free-Air Temperature)
Characteristic
Forward Recovery Time, Figure 3
(IF = 500 rnA)
Reverse Recovery Time, Figure 2
(IF = 200 rnA, IRM = 200 mA, RL
Vdc
,.A
-
Peak Forward Voltage(3)
(IF = 500 rnA)
Unit
=
100 n, irr
= 20
Svmbol
Tvpical Value
Unit
tfr
20
ns
trr
S.O
ns
rnA)
NOTES:
1. This parameter must be measured using pulse techniques. PW = 100 /LS, duty cycle", 20%.
2. This parameter is measured using pulse techniques. PW = 300 /LS, duty cycle", 2.0%. Read time is 90 /LS from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle'" 2.0%, pulse rise time'" 10 ns. The
total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is SO MHz.
FIGURE 1 - TYPICAL CHARACTERIS"FICS
STATIC FORWARD VOLTAGE
FIGURE 2 - FORWARD RECOVERY TIME AND PEAK FORWARD
VOLTAGE TEST CIRCUIT AND WAVEFORMS
100 0
0
TA
+25°C I---
0
lOU
TPm o---""'-~r----o Tpout
tr";;; 15 ns
Duty Cycle
4 5 ns
RIn~10MU
t r >;;;
~
2 0%
PW=150ns
DUT
em ~
50 pF
0
I
I
VF
I~
O. 1
o2
~-
0 4 0 6 0 B 1.0 1 2 1.4 1 6 1 B
Vf. fORWARD VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-17
..
MAD130, MAD1103, MAD1107, MAD1108
FIGURE 3 - REVERSE RECOVERY TIME TEST CIRCUIT AND WAVEFORMS
005~F
O~ TPln~k
12mH
0001 ",F
Ad/uSt amphtude for
"~ 200 mAde to 50D mAde
Input Pulse
tr
';;;04 ns
Rln = 50 ohms
,
Adjust tor IR = IF
If:$i;; 10 ns
Duty Cycle';;;; 1 0%
PW=200ns
lout = 50 ohms
-=
•
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
5-18
MAXIMUM RATINGS (@ 25°C Free-Air Temperature unless otherwise noted)
Rating
Symbol
Value
Unit
VRM
50
Vdc
Steady-State Reverse
Voltage
VR
40
Vdc
Peak Forward Current at
(or below) 25°C Free-Air
Temperature(1 )
IFM
500
mA
Continuous Forward
Current at (or below)
25°C Free-Air
Temperature(2)
IF
400
mA
Continuous Power
Dissipation at (or below)
25°C Free-Air
Temperature(3)
Po
600
mW
Peak Reverse Voltage(l)
MADll09
-
MAD1109C
CERAMIC
CASE 632-08
TO-116
1
MAD1109F
FLAT CERAMIC
CASE 607-05
~
14
MAD1109C
MAD1109F
MAD1109P
PLASTIC
CASE 646-06
TO-116
MAD1109P
Operating Free-Air
Temperature Range
TA
-65 to + 175 -65to +150 -55to +125
°c
Storage Temperature
Range
Tstg
-65to +200 -65to +175 -55to +150
°c
260
°c
MONOLITHIC DIODE ARRAYS
Lead Temperature 1116"
from Case for 10
Seconds
NOTES:
1. These values apply for PW '" 100 p.s, duty cycle", 20%.
2. Derate linearity to + 125°C temperature at rate of 3.2 mAf'C.
3. Derate linearity to +125°C temperature at rate of 6.0 mWrC.
PIN CONNECTION DIAGRAM
1111111
ELECTRICAL CHARACTERISTICS (@ 25°C Free-Air Temperature)
Limit
Characteristic
Reverse Breakdown Voltage(4)
(lR
=
10/LA)
= 40 V)
Static Forward Voltage (IF = 100 mAl
(IF = 500 mA)(5)
Peak Forward Voltage(6) (IF = 500 mAl
Static Reverse Current
(VR
Symbol
Min
V(BR)
50
-
-
0.1
/LA
1.1
1.5
Vdc
5.0
Vdc
IR
VF
VFM
Max
Unit
Vdc
SWITCHING CHARACTERISTICS (@ 25°C Free-Air Temperature)
Characteristic
Forward Recovery Time, Figure 3 (IF
Reverse Recovery Time, Figure 2
(IF = 200 mA. IRM = 200 mA, RL
=
=
500 mAl
100 n, irr
Symbol
Typical Value
Unit
tfr
20
ns
trr
8.0
ns
= 20 mAl
NOTES:
4. This parameter must be measured using pulse techniques. PW = 100 ILs, duty cycle ~ 20%.
5. This parameter is measured using pulse techniques. PW = 300 p.s, duty cycle'" 2.0%. Read time is 90 p.s from the leading edge of the
pulse.
6. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle'" 2.0%, pulse rise time'" 10 ns. The
total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-19
•
MAD1109
1000
«
E.
100
.....
z
TA
~
a:
:::>
u
c
+ 25°C
=1==
10
100
TPin o--'WI,.-.....----o Tpoul
~ 15ns
DUTY CYCLE", 2%
PW=150ns
tr
~a:
OUT
~
If'" 4.5 ns
Rin '" 1 MO
Cin"'5pF
.>?
0.1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VF. FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Characteristics
Static Forward Voltage
Figure 2. Forward Recovery Time and Peak Forward
Voltage Test Circuit and Waveforms
SCOPE
~
•
T
0.05 p.F
POi_
n _-1I---4I___'-_~-4~H-4-~--6
ADJUST AMPLITUDE FOR
IF = 200 mAde To 500 mAde
INPUT PULSE
'f'"
1 ns
DUTY CYCLE", 1%
6k
0.001 p.F
'f'"
0.4 ns
Rin = 50 OHMS
PW = 200 ns
loUI = 50 OHMS
Figure 3. Reverse Recovery Time Test Circuit and Wav,eforms
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-20
MAXIMUM RATINGS
Symbol
Value
Reverse Voltage
Rating
VR
70
Vde
Forward Current
IF
200
mAde
IFM(surae)
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
ReJA
556
·CIW
Po
300
mW
2.4
mWf'C
ROJA
417
°CIW
TJ, Tstg
-55to +150
·C
Peak Forward Surge Current
Unit
MBAV70L
CASE 318·03. STYLE 9
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA ~ 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25°C
~
25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Anode
"FR-5 ~ 1.0 x 0.75 x 0.062 in.
""Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
::
::
30-1
Cathode
Anode
SWITCHING DIODE
DEVICE MARKING
I MBAV70L ~ A4X
ELECTRICAL CHARACTERISTICS (TA ~ 25·C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)
>70
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) ~ 100 !LAde)
Reverse Voltage Leakage Current
(VR ~ 25 Vde, TJ ~ 150·C)
(VR ~ 70 Vde)
(VR ~ 70 Vde, TJ ~ 150·C)
IR
Diode Capacitance
(VR ~ 0, I ~ 1.0 MHz)
CD
Forward Voltage
(IF ~ 1.0 mAde)
(IF ~ 10 mAde)
(IF ~ 50 mAde)
(IF ~ 100 mAde)
VF
Reverse Recovery Time
(IF ~ IR ~ 10 mAde, VR ~ 5.0 Vde, IR(REC) ~ 1.0 mAde) (Figure 1)
trr
FIGURE 1 -
-
Vde
p.Ade
-
60
5.0
100
-
1.5
-
-
715
855
1100
1300
-
15
pF
mVde
ns
Recovery Time Equivalent Test Circuit
t __ )F
)NPUT S)GNAL
(IF
Noles: 1. A 2.0 kG variable resislor adjusled lor a Forward Currenl (IF) 01 10 mAo
2. Inpul pulse is adjusled so IR(peak) is equal to 10 mA.
3. tp» Irr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-21
OUTPUT PULSE
IR ~ 10 mA; measured
at iR(REC) ~ 1.0 mAl
~
•
MAXIMUM RATINGS
Rating
Unit
Symbol
Value
Reverse Voltage
VR
50
Vdc
Forward Current
IF
200
mAde
IFM(surge)
500
mAde
Symbol
Max
Unit
PD
225
mW
1.8
mWrC
ROJA
556
"CIW
PD
300
mW
2.4
mWrC
R8JA
417
'CIW
TJ, Tstg
-55to +150
"C
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25"C
Junction and Storage Temperature
CASE 318·03, STYLE 9
SOT-23 (TO·236AB)
Anode
Derate above 25°C
Thermal Resistance Junction to Ambient
MBAV74L
'FR-5 = 1.0 x 0.75 x 0.062 in.
<'Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
30-1
Cathode
:: ::
Anode
SWITCHING DIODE
DEVICE MARKING
I MBAV74L = JAX
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)
50
-
-
100
0.1
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(i(BRI = 5.0 !-
./
;:li
~
/
20
/
10
~ 5.0
0:
0.1
:::>
III
0.07
0:
~
~ 2.0
0:
0.05
~ 1.0
~
Ji:
S?
0.02
0.5
0.2
0.1
0.01
30
40
50
60
70
80
90
100
110
120
0.2
130
0.3
TA, AMBIENT TEMPERATURE (OC)
FIGURE 3 - CAPACITANCE
FIGURE 4 11
0.9
............
r·
...............
::l!
<.S
B
---
0.7
--
0.6
0.7
I',
~ 8.0
~ 7.0
f"....
'" 6.0
m
r--
NOISE FIGURE
(Test circuit Figure 5)
9.0
u
0.5
~OC~L ~S~IL~~~~ FRE~UE~Cyl = 11.0 riH;
"-
10
w
0.4
VF, FORWARD VOLTAGE (VOLTS)
1.0
~
FORWARD VOLTAGE
100
•
.......
~ 5.0
~ 4.0
3.0
2.0
1.0
0.6
o
1.0
2.0
3.0
0.1
4.0
FIGURE 5 -
1.0
2.0
5.0
10
NOTES ON TESTING AND SPECIFICATIONS
--
DIODE IN
TUNED
MOUNT
r-
IF AMPLIFIER
NF=1.5dB
f = 30 MHz
I-
t
-
Cc and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 - Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is
adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30
MHz, see Figure 5.
Note 3 - LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Note 1 -
~
NOISE
FIGURE METER
H.P.342A
0.5
NOISE FIGURE TEST CIRCUIT
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P.349A
0.2
PLQ, LOCAL OSCILLATOR POWER (mW)
VR, REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-25
SILICON HOT-CARRIER DIODE
(SCHOTTKY BARRIER DIODE)
· .. designed primarily for high-efficiency UHF and VHF detector applications. Readily adaptable to many other fast switching RF and digital applications. Supplied in an inexpensive plastic package for low-cost, high-volume
consumer and industrial/commercial requirements. Also available in Surface
Mount package.
• The Schottky Barrier Construction Provides Ultra-Stable Characteristics By
Eliminating the "Cat-Whisker" or "S-Bend" Contact
• Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Two Voltage Ranges -
CASE 182-02, STYLE 1
(TO-226AC)
Cat~o~.
MBD201
MBD301
Forward Power Dissipation @ TA = 25·C
Derate above 25·C
I MMBD301L
Operating Junction Temperature Range
Storage Temperature Range
Symbol
Value
Unit
VR
20
30
Volts
280
2.8
PF
I
200
2.0
1.3
12
UJI'
0>---+14....-0 1
Cathode
MBD20~ MMBD201L
MBD301
!
2
3
MAXIMUM RATINGS (TJ = 125·C unless otherwise noted)
Rating
~n~de
CASE 318-03, STYLE 8
SOT-23 (TO-236AB)
MBD201, MMBD201
MBD301, MMBD301
• Low Reverse Leakage -IR = 10 nAdc (Typ) MBD201, MMBD201L
= 13 nAdc (Typ) MBD301, MMBD301L
Reverse Voltage
14
15 ps (Typ)
1.5 pF (Max) @ VR = 15 V
20 V 30 V -
MBD201 MMBD201L
MBD301 MMBD301L
Anode
20-30 VOLTS
SILICON HOT-CARRIER
DETECTOR AND SWITCHING
DIODES
mW
mWf'C
TJ
-55to +125
·C
Tstg
-55to +150
·C
DEVICE MARKING
•
= 4S
I MMBR201L
MMBR301L = 4T
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Symbol
Characteristic
Reverse Breakdciwn Voltage
(lR = 10 p.A)
Minority Carrier Lifetime, Figure 2
(IF = 5.0 mA, Krakauer Method)
Unit
Volts
-
-
CT
-
0.9
1.5
pF
7
-
15
-
ps
-
-
10
13
200
200
-
0.5
0.6
IR
VF
nAdc
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
5-26
Max
-
MBD201, MMBD201L
MBD301, MMBD301L
Forward Voltage, Figure 4
(IF = 10 mAde)
Typ
20
30
MBD201, MMBD201L
MBD301, MMBD301L
Total Capacitance, Figure 1
(VR = 15 Volts, f = 1.0 MHz)
Reverse Leakage, Figure 3
(VR=15V)
(VR = 25 V)
Min
V(BR)R
Vdc
MBD201, MBD301, MMBD201 L, MMBD301 L
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 - TOTAL CAPACITANCE
2.B
FIGURE 2 - MINORITY CARRIER LIFETIME
500
f~ 1.0M~''&
~ 2.4
~ 400
~
~ 2.0
~
::
~
~1 6 \ \.
I
ir
;5
~ 1. 2
........
~
200
~;;
100
>....
e
~
KRAKAUER METHOO
300
O. 8
o.4
.:
0
3.0
6.0
9.0
12
15
18
21
VR, REVERSE VOLTAGE fVOLTS)
24
27
30
- - f-10
20
~
30
- -
40
/
V
I---
50
60
70
80
90
100
IF, FORWARD CURRENT ImA)
FIGURE 3 -
REVERSE LEAKAGE
FIGURE 4 -
10
FORWARD VOLTAGE
100
50
TA-25 DC- I---
0 - TA - 100DC
1
1
10
;
50
-
1.0
05
75°C
e
~
~
1
e
25D
~.
01
~ 0.0 5
0.00 1
6.0
12
18
VR, REVERSE VOLTAGE IVOL TS)
24
00 1
0.2
30
0.4
0.6
0.8
VF, FORWARD VOLTAGE IVOL TS)
KRAKAUER METHOD OF MEASURING LIFETIME
STORAGE
CONOUCT10N
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-27
1.0
1.2
•
SILICON HOT·CARRIER DIODE
(SCHOTTKY BARRIER DIODE)
• •. designed primarily for high-efficiency UHF and VHF detector applications. Readily adaptable to many other fast switching RF and digital
applications. Supplied in an inexpensive plastic package for low-cost, highvolume consumer and industrial/commercial requirements. Also available in
Surface Mount package.
CASE 182·02, STYLE 1
(TO·226AC)
• The Schottky Barrier Construction Provides Ultra-Stable Characteristics by
Eliminating the "Cat-Whisker" or "S-Bend" Contact
• Extremely Low Minority Carrier lifetime • Very Low Capacitance -
to 70 Volts
• Low Reverse Leakage -
200 nA (Max)
I-
20
Cathode
=
12
CASE 318·03, STYLE 8
SOT·23 (TO·236AB)
I_
30
Cathode
MAXIMUM RATINGS (TJ
01
Anode
15 ps (Typ)
1.0 pF @ VR = 20 V
• High Reverse Voltage -
!
MBDSOI MMBDS01L
MBD701 MMBD701L
01
• .3
1
U)JI
2
Anode
50-70 VOLTS
HIGH·VOLTAGE
SILICON HOT·CARRIER
DETECTOR AND SWITCHING
DIODES
125"C unless otherwise noted)
I MMBD701L
MBD50~ MMBD501L
MBD701
Rating
Reverse Voltage
MBD501
MBD701
Forward Power Dissipation @ TA
Derate above 25"C
=
25"C
Value
Unit
VR
50
70
Volts
PF
Operating Junction Temperature Range
•
Symbol
Storage Temperature Range
280
2.8
I
200
2.0
mW
mWrC
TJ
-55to +125
"C
Tsta
-55 to +150
"C
DEVICE MARKING
5F
I· MMBD501L
MMBD701L = 5H
=
ELECTRICAL CHARACTERISTICS (TA
=
25"C unless otherwise noted)
Symbol
Characteristic
Reverse Breakdown Voltage
(lR = 10 !LAde)
Minority Carrier Lifetime, Figure 2
(IF = 5.0 rnA. Krakauer Method)
Unit
Volts
-
CT
-
0.5
1.0
pF
T
-
15
-
ps
-
7.0
9.0
200
200
1.0
1.2
IR
VF
-
nAde
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-28
Max
-
MBD501, MMBD501L
MBD701, MMBD701L
Forward Voltage, Figure 4
(IF = 10 mAde)
Typ
50
70
MBD501, MMBD501L
MBD701, MMBD701L
Total Capacitance, Figure 1
(VR = 20 Volts, f = 1.0 MHz)
Reverse Leakage, Figure 3
(VR = 25 V)
(VR = 35 V)
Min
V(BR)R
Vde
MBD501, MBD701, MMBD501 L, MMBD701 L
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 -
FIGURE 1 - TOTAL CAPACITANCE
1.0
~
I
f ~ 1.0MHz
1.6
w
u
Z
~
1.2
U
§
0.8
~
o
....
Ii
MINORITY CARRIER LIFETIME
SOO
~
~ 400
I--
e
"
\
l
~
\
KR KAUER METHOO
300
~
5
I'---..
200
/
~
;;;
r--
o
i
0.4
100
~-
-
0
5.0
fO
15
10
15
30
35
40
45
--
10
50
VR. REVERSE VOLTAGE (VOLTSI
FIGURE 3 -
I-- ~
10
30
--
40
50
~
60
--
70
/
/
80
90
100
IF. fORWARD CURRENT (mAl
FIGURE 4 -
REVERSE LEAKAGE
FORWARD VOLTAGE
100
10
SO
TA
~lfOOOC
1
----
TA ~ 7SoC
10
T
10
25'C
~ :, 0
r--
•
~
~ 2a
o
10
~
0S
~
:;'
TA'" 25°C
--f----
1
f
•
00
00 1
00 1
0.00 1
10
10
40
30
o
50
VR. REVERSE VOLTAGE (VOLTSI
04
08
12
16
10
Vf. fORWARD VOLTAGE (VOLTS)
KRAKAUER METHOD OF MEASURING LIFETIME
STORAGE
CONDUCTION
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-29
14
1.8
MMAD130
MMADII03
thru
MMADII07
MMADII09
CASE 7S1A-02
SO-14
MAXIMUM RATINGS
Symbol
Value
Unit
VRM
50
Vdc
Steady·State Reverse Voltage
VR
40
Vdc
Peak Forward Current 25°C
IFM
500
mA
Continuous Forward Current
IF
400
mA
Power Dissipation
Derating Factor
Po
500
4.0
mW
mWfC
TA
-65 to +125
°C
Tst!!
-65 to + 150
°C
Rating
Peak Reverse Voltage
Operating Temperature
Storage Temperature Range
MONOLITHIC
DIODE ARRAYS
SO-14 Pin Diagram
1.
•
Dual 10
Diode
Array
2.
16
Diode
Array
JImmH:
2
ei)
Dual 8
Diode
Array
MMAD1106
8 Diode
Array
(Common
Anode)
.903414567
@llllllIl
NC Pin 1,4,6,10,13
6.
MMAD1103
MMAD1107
Jmm(
Dual 8
Diode
Array
~ftffHft
~
3.
5.
MMAD130
NC Pin 4, 6, 10, 13
NC Pin 6, 13
7.
MMAD1104
]Be[
MMAD1109
7 Diode
Array
(lndependant)
1111111
NC Pin 4, 11
4.
8 Diode
Array
(Common
Cathode)
MMAD1105
@11111111
NC Pin 1,4,6, 10, 13
Device
Description
MMAD130
MMAD1103
MMAD1104
MMAD1105
MMAD1106
MMAD1107
MMAD1109
Dual 10 Diode Array
16 Diode Array
Dual 8 Diode Array
8 Diode Array Common Cathode
8 Diode Array Common Anode
Dual 8 Diode Array
7 Diode Array
MOTOROLA SMALL-SIGNAL TRANS)STORS, FETs AND DIODES
5-30
Diagram
1
2
3
4
5
6
7
MMAD130 Series
ELECTRICAL CHARACTERISTICS (@ 25°C Free-Air Temperature)
Limit
Characteristic
Reverse Breakdown Voltage (1) (lR = 10"A)
Static Reverse Current
(VR
= 40
V)
Symbol
Min
Max
Unit
V(BR)
50
-
Vdc
IR
Static Forward Voltage (IF = 100 mAl
(IF = 500 mAl (2)
VF
Peak Forward Voltage (3) (IF = 500 mAl
VFM
SWITCHING CHARACTERISTICS
-
-
0.1
"A
1.1
1.5
Vdc
5.0
Vdc
(@ 25°C Free-Air Temperature)
Symbol
Typical Value
Unit
Forward Recovery Time (IF = 500 mAl
tfr
20
ns
Reverse Recovery Time
(IF = 200 mAo IRM = 200 mAo RL = 100
trr
8.0
ns
Characteristic
n. irr =
20 mAl
1. This parameter must be measured using pulse techniques. PW = 100 fAS. duty cycle'" 20%.
2. This parameter is measured using pulse techniques. PW = 300 fAs. duty cycle'" 2.0%. Read time is 90 fAS from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns. duty cycle", 2.0%. pulse rise time'" 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-31
MMADll08
CASE 7518-03
50-16
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRM
SO
Vdc
Steady-State Reverse Voltage
VR
40
Vdc
Peak Forward Current 2S'C
IFM
SOO
mA
Continuous Forward Current
IF
400
mA
Power Dissipation
Derating Factor
Po
SOO
4.0
mW
mWFC
Operating Temperature
TA
-6S to +125
'C
Tsta
-65 to + 1S0
'C
Peak Reverse Voltage
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
III1!111
Pin Connections Diagram
MONOLITHIC
DIODEARRAV
(@ 2S'C Free-Air Temperature)
Limit
Symbol
Min
V(BR)
50
-
Vdc
Static Reverse Current
(VR ~ 40 V)
IR
-
0.1
pA
Static Forward Voltage
(IF ~ 100 mAl
(IF ~ SOO mAl (2)
VF
-
1.1
1.S
-
S.O
Characteristic
Reverse Breakdown Voltage (1)
(lR ~ 10 pA)
•
Peak Forward Voltage (3)
(IF ~ SOO mAl
VFM
SWITCHING CHARACTERISTICS
Forward Recovery Time
~
Unit
Vdc
Vdc
(@ 2S'C Free-Air Temperature)
Characteristic
(IF
Max
Symbol
Typical Value
Unit
tfr
20
ns
trr
8.0
ns
SOO mAl
Reverse Recovery Time
(IF ~ 200 mA, IRM ~ 200 mA, RL ~ 100 n, irr ~ 20 mAl
1. This parameter must be measured uSing pulse techniques. PW ~ 100 p.s, duty cycle", 20%.
2. This parameter is measured using pulse techniques. PW ~ 300 p.s, duty cycle'" 2.0%. Read time is 90 P.s from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW ~ lS0 ns, duty cycle", 2.0%, pulse rise time'" 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
5-32
MMBD101L For Specifications, See MBDl01L
MMBD201L MMBD301L For Specifications,
,
MMBD352L
See MBD201L
CASE 318-03, STYLE 11
SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating
Anode
Continuous Reverse Voltage
10
~I
J
Characteristic
Symbol
Max
Po
225
mW
1.8
mWrC
R6JA
556
°CIW
Po
300
mW
2.4
mWrC
ROJA
417
°CIW
TJ, TstQ
-55to +150
°C
Total Device Dissipation FR-5 Board,'
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Cathode/Anode
Unit
MMBD353L
CASE 318-03, STYLE 19
SOT-23 (TO-236AB)
20
I"
01
3
Cathode/Anode
DUAL HOT CARRIER
MIXER DIODES
DEVICE MARKING
MMBD353L
Cathode
Anode
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
= 5G;
02
3
THERMAL CHARACTERISTICS
MMBD352L
Cathode
~I
= 4F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(IF = 10 mAl
VF
-
0.60
V
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 4.0 V)
IR
Capacitance
(VR = 0 V, f
C
OFF CHARACTERISTICS
=
1.0 MHz)
-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-33
pA0.25
10
1.0
pF
Specifications,
MMBDS01L, MMBD701L For
See MBD501L Data.
MMBD914L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAde
IFM(surgel
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
R8JA
556
·CIW
Po
300
mW
2.4
mWrC
R8JA
417
·CIW
TJ, Tstg
-55 to +150
·C
Peak Forward Surge Current
CASE 318-03, STYLE 8
SOT-23 (TO-236AB)
1~3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25·C
Derate above 25·C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25·C
= 25·C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
2
30
Cathode
01
I"
Anode
HIGH-SPEED SWITCHING DIODE
'FR-5 = 1.0 x 0.75 x 0.062 in.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBD914XL = 50
I
ELECTRICAL CHARACTERISTICS (TA
= 25·C unless otherwise noted.1
Characteristic
Symbol
Min
Max
V(BRI
100
-
-
-
25
5.0
nAdc
,..Adc
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(lR = 100 "Adcl
Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdcl
(VR = 75 Vdcl
IR
Diode Capacitance
(VR = 0, f = 1.0 MHzl
CT
-
4.0
pF
Forward Voltage
(IF = 10 mAdcl
VF
-
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdel (Figure 11
trr
-
4.0
ns
FIGURE 1 -
Recovery Time EqUivalent Test Circuit
OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 rnA; measured
at iR(REC) = 1.0 rnA)
Notes: 1. A 2.0 kG variable resistor adjusted for a Forward Current (IF) of lOrnA.
2. Input pulse is adjusted so IR(peak) is equal to 10 rnA.
3. Ip» trr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-34
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
75
35
Vde
IF
lOa
mAde
MMBD2836XL
MMBD2835XL
Forward Current
MMBD2835XL
MMBD2836XL
CASE 318-03, STYLE 12
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
R6JA
556
'CIW
Po
300
mW
2.4
mWf'C
R6JA
417
'CIW
TJ, Tstg
-55 to +150
'C
Total Device Dissipation FR-5 Board,*
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA
Derate above 25'C
= 25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Cathode
*FR-5 = 1.0 x 0.75 x 0.062 In.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DUAL
SWITCHING DIODES
DEVICE MARKING
I MMBD2835XL = A3X; MMBD2836XL = A2X
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(lR = 100 pAde)
Vde
V(BR)
MMBD2835XL
MMBD2836XL
Reverse Voltage Leakage Current
(VR = 30 Vde)
(VR = 50 Vde)
IR
MMBD2835XL
MMBD2836XL
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
Forward Voltage
(IF = 10 mAde)
(IF = 50 mAde)
(IF = 100 mAde)
VF
Reverse Recovery Time
(IF = IR = 10 mAde, iR(REC) = 1.0 mAde) (Figure 1)
trr
FIGURE 1 -
35
75
-
-
100
100
-
4.0
-
nAde
pF
Vde
1.0
1.0
1.2
15
ns
Recovery Time Equivalent Test Circuit
)NPUT SIGNAL
OUTPUT PULSE
(IF
= IR = 10 rnA; measured
al iR(REC)
Noles: 1. A 2.0 kn variable resistor adjusted for a Forward Currenl (IF) of lOrnA.
2. Inpul pulse is adjusled so IR(peak) is equal to lOrnA.
3. Ip» Ir,
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-35
=
1.0 mAl
•
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
Symbol
Value
Unit
VRM
75
Vde
VR
30
50
Vde
IFM
450
300
mAde
10
150
100
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWf'C
ROJA
556
'c/w
Po
300
mW
2.4
mWf'C
ROJA
417
'CIW
TJ, Tsta
-55 to +150
'C
MMBD2837XL
MMBD2838XL
Peak Forward Current
Average Rectified Current
MMBD2837XL
MMBD2838XL
CASE 318-03, STYLE 9
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA = 25'C
Derate above 25'C
Anode
30-1
Cathode
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
:: ::
Anode
DUAL
SWITCHING DIODES
'FR-5 = 1.0 x 0.75 x 0.062 on.
"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBD2837XL
= A5X; MMBD2838XL = A6X
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Ch.racteristic
Symbol
Min
Max
35
75
-
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 /lAde)
•
V(BR)
MMBD2837XL
MMBD2838XL
Reverse Voltage Leakage Current
(VR = 30 Vdc)
(VR = 50 Vdc)
IR
MMBD2837XL
MMBD2838XL
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
Forward Voltage
(IF = 10 mAde)
(IF = 50 mAde)
(IF = 100 mAde)
VF
Reverse Recovery Time
(IF = IR = 10 mAde, iR(REC)
trr
/lAde
-
0.1
0.1
-
4.0
pF
Vdc
-
1.0
1.0
1.2
-
=
Vde
-
15
ns
1.0 mAde) (Figure 1)
FIGURE 1 -
Recovery Time Equivalent Test Circuit
OUTPUT PULSE
INPUT SIGNAL
(IF
= IR = 10 rnA; measured
at iR(REC)
Notes: 1. A 2.0 kG variable resistor adjusted for a Forward Current (IF) of lOrnA.
2. Input pulse is adjusted so IR(peak) is equal to lOrnA.
3. tp» trr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-36
=
1.0 rnA)
MAXIMUM RATINGS
Symbol
Value
Reverse Voltage
Rating
VR
70
Vdc
Forward Current
IF
200
mAde
IFM(surge)
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWrC
ReJA
556
'CIW
Po
300
mW
2.4
mWrC
ReJA
417
'CIW
TJ, Tstg
-55 to +150
'c
Peak Forward Surge Current
Unit
MMBD60S0L
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,"
TA = 25'C
Derate above 25'C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,"" TA
Derate above 25'C
=
CASE 318-03, STYLE 8
SOT-23 (TO-236ABI
25'C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 0--+14t--0
1
Anode
Cathode
"FR-5 = 1.0 x 0.75 x 0.062 m.
""Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SWITCHING DIODE
DEVICE MARKING
I MMBD6050XL
= 5A
ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted.)
Symbol
Min
V(BR)
70
-
Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
IR
-
0.1
pAdc
Forward Voltage
(IF = 1.0 mAde)
(IF = 100 mAde)
VF
0.55
0.85
0.7
1.1
Characteristic
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 pAdc)
Reverse Recovery Time
(IF = IR = 10 mAde, iR(REC)
trr
=
1.0 mAde) (Figure 1)
Capacitance
(VR = 0)
C
FIGURE 1 -
Vdc
-
4.0
ns
2.5
pF
Recovery Time Equivalent Test Circuit
OUTPUT PULSE
INPUT SIGNAL
(IF = IA = 10 rnA; measured
at iA(AEC) = 1.0 rnA)
Notes: 1. A 2.0 kO variable. resistor adjusted for a Forward Current (IF) of lOrnA.
2. Input pulse is adjusted so IA(peak) is equal to 10 rnA.
3. tp» trr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-37
•
MAXIMUM RATINGS
Symbol
Value
Reverse Voltage
Rating
VR
70
Vdc
Forward Current
IF
200
mAde
IFM(sur!le)
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWfC
ReJA
556
°CfW
Po
300
mW
2.4
mWfC
R6JA
417
°CIW
TJ, Tst!l
-55to +150
°C
Peak Forward Surge Current
Unit
MMBD6100L
CASE 318-03, STYLE 9
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board, *
TA = 25°C
Derate above 25°C '
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, ** TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Anode
30-1
Cathode
*FR-5 = 1.0 x 0.75 x 0.06210.
*"Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
:: ::
Anode
DUAL
SWITCHING DIODES
DEVICE MARKING
I MMBD6100L
=
5B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
V(BR)
70
-
Vdc
Reverse Voltage Leakage Current
(VR = 5OVdc)
IR
-
0.1
!lAde
Forward Voltage
(IF = 1.0 mAde)
(IF = 100 mAde)
VF
0.55
0.85
0.7
1.1
trr
-
15
ns
C
-
2.5
pF
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 !lAde)
•
Reverse Recovery Ti me
(IF = IR = 10 mAde, iR(REC)
=
1.0 mAde) (Figure 1)
Capacitance
(VR = 0)
FIGURE 1 -
Vdc
Recovery Time Equivalent Test Circuit
OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 mA; measured
at iR(REC) = 1.0 mAl
Notes: 1. A 2.0 k(} variable resistor adjusted for a Forward Current (IF) of 10 mAo
2. Inpul pulse is adjusted so IR(peak) is equal to 10 mA.
3. Ip» Irr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-38
MAXIMUM RATINGS
Rating
Unit
Symbol
Value
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAde
IFM(surae)
500
mAde
Symbol
Max
Unit
Po
225
mW
1.8
mWFC
ROJA
556
"CIW
Po
300
mW
2.4
mW/"C
ROJA
417
"CIW
TJ, Tsta
-55to +150
"C
Peak Forward Surge Current
MMBD7000L
CASE 318-03, STYLE 11
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,'
TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
'FR-5
~
1.0 x 0.75 x 0.062
**Alumina
=
Cathode
~I 02
Anode
10
Cathode/Anode
In.
DUAL
SWITCHING DIODES
0.4 x 0.3 x 0.024 in. 99.5% alumina.
DEVICE MARKING
I MMBD7000L ~ 5C
ELECTRICAL CHARACTERISTICS
(TA ~ 25"C unless otherwise noted.)
Characteristic
Symbol
Min
V(BR)
100
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) ~ 100 !LAde)
Reverse Voltage Leakage Current
(VR ~ 50 Vde)
(VR ~ 100 Vde)
(VR ~ 50 Vde, 125"C)
-
Vdc
!LAde
-
-
0.30
0.5
100
0.55
0.67
0.75
0.7
0.82
1.1
trr
-
4.0
ns
C
-
1.5
pF
IR
IR2
IR3
Forward Voltage
(IF ~ 1.0 mAde)
(IF ~ 10 mAde)
(IF ~ 100 mAde)
VF
Reverse Recovery Time
(IF ~ IR ~ 10 mAde) (Figure 1)
Capacitance
(VR ~ 0)
FIGURE 1 -
Vde
Recovery Time Equivalent Test Circuit
INPUT SIGNAL
OUTPUT PULSE
(IF ~ IR ~ 10 mA; measured
at iR(REC) ~ 1.0 rnA)
Notes: 1. A 2.0 kO variable resistor adjusted for a Forward Current (IF) of 10 rnA.
2. Input pulse is adjusted so IR(peak) is equal to 10 rnA.
3. tp oIrr
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-39
•
MMBVI0SGL
MVI0SG
SILICON EPICAP DIODES
... designed in the Surface Mount package for general frequency control
and tuning applications; providing solid-state reliability in replacement of
mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
CASE 182-02. STYLE 1 /
(TO-226AC)
1
2o---j~1
Cathode
MAXIMUM RATINGS
CASE 318.03. STYLE 8
SOT·23 (TO-236AB)
MV105GIMMBV105G,L
Rating
Symbol
Value
Unit
VR
30
Volts
Reverse Voltage
Forward Current
IF
Device Dissipation @ TA = 25·C
Derate above 25·C
PD
I
TJ
+125
·C
Tsta
-55to +150
·C
Junction Temperature
Storage Temperature Range
mW
mWFC
200
2.0
2
1
'~3
.!J1J
2
3o---j~1
Cathode
mA
200
280
2.8
Anode
Anode
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
DEVICE MARKING
I MMBV105GL
= 4E
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(lR = 10 !-lAde)
•
Reverse Voltage Leakage Current
(VR = 28 V)
Min
V(BR)R
30
-
Vdc
-
50
nAdc
IR
Cr
I
I
Min
1.8
Typ
Min
2.8
150
4.0
-
w
16
u
14
~
12
z
U
~
w
""c;
S
DIODE CAPACITANCE
-....
18
~
10
'"
......
!"..
80
I'-
TA" 25°C
60
f '" 1 0 MHz
40
I'--
II
2.0
II
o
03
Unit
C3-'C2S
Max
FIGURE 1 20
Max
Q
f = 100 MHz
VR = 3.0 V
VR = 2S Vdc
pF
Device
Type
MMBV105G
Symbol
05
10
20
30
50
10
20
30
VR. REVERSE VOL TAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-40
I
I
Max
6.0
MMBV105GL, MV105G
FIGURE 3 - DIODE CAPACITANCE
FIGURE 2 - FIGURE OF MERIT
160 0
104
140 0 1 - - r- TA
O
;5 0 C
V
I" 100 MHl
f-
120 0
~ 1000
0
800
=>
'"c;:
40 0
200
~
w
u
--
o
o
40
V
./
101
VA
V
~30Vdc
101
:i
100
~
099
---
. . .V
~
~
----
./
~ 098
V
8.0
103
f-
/V
600
d
~
o
/
~
~
~
~
/
a;
w
/
o
~097
12
16
20
24
28
096
-75
32
VR. REVERSE VOL TAGE (VOL TS)
-50
-25
+25
+50
+75
+100
+125
TA. AMBIENT TEMPERATURE (OCI
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-41
MMBVI09L
MV209
SILICON EPICAP DIODE
· .. designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
CASE 182-02, STYLE 1
(TO-226AC)
• Available in Surface Mount Package
0--1 I+--<> 1
2
Cathode
MV209
Rating
Value
Unit
VR
30
Volts
Reverse Voltage
Forward Current
IF
Forward Power Dissipation @TA = 25°C
Derate above 25'C
Po
Junction Temperature
Storage Temperature Range
I MMBV209,L
Symbol
200
280
2.8
CASE 318-03, STYLE 8
SOT-23 (TO-236AB)
0--11+--<> 1
mA
200
2.0
I
3
Cathode
mW
mWf'C
TJ
+125
°c
Tstg
-55 to + 150
°c
'/
2
Anode
MAXIMUM RATINGS
Anode
26-32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
DEVICE MARKING
I MMBV109L
= 4A
= 25°C unless otherwise
ELECTRICAL CHARACTERISTICS (TA
noted)
Characteristic
Reverse Breakdown Voltage
(lR = 10 /LAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc)
•
Device
Typ
30
-
-
Vdc
-
-
0.1
/LAdc
300
-
ppmf'C
TCC
a. Figure of Merit
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
L MMBV109L, MV209
Min
V(BR)R
IR
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
I
Symbol
I
I
Min
26
I
I
Nom
29
FIGURE 1 -
40
"
32
w
28
~ 24
~
~
"-
Max
Min
Min
32
200
5.0
DIODE CAPACITANCE
'\
20
5 16
e
12
o
8"
"-
8
I'---.
o
1
10
VR. REVERSE VOLTAGE (VOLTS)
100
MOTOROLA SMALL-SIGNA.L TRANSISTORS. FETs AND DIODES
5-42
Unit
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz
(Note 2)
...........
36
~
VR = 3.0 Vdc
f = 50 MHz
(Note 1)
Max
I
I
Max
6.5
MMBV109L, MV209
FIGURE 2 -
°
TA
o~ 1
FIGURE OF MERIT
FIGURE 3 - LEAKAGE CURRENT
,/
~
15°C
50 MHz
./
V
L
1
60
~
co
20
~
~
./
02
./
0I
: 0.02
- 001
0.006
0.002
0001
/
3.0
6.0
9.0
11
15
18
11
VR. REVERSE VOLTAGE (VOLTSJ
FIGURE 4 -
./
VR:O 20 Vdc
10
~ 0.06
/'
0.1
./
20
10
B 06
./
°
-
100
60
14
17
30
/'
-60
-40
-20
+20
+40
+60
+80
+100
+120 +140
TA. AMBI ENT TEMPE RATURE lOCI
DIODE CAPACITANCE
104
~
1.03
NOTES ON TESTING AND SPECIFICATIONS
::;
~ 1.02
a:
o
~
w
101 -1-,01.0 MHz
Ct~Cc+Cj
'-'
.
~ 1.00
>-
if
0,99
~
0.98
",..,V
/
;5
o
V
VR",30Vdc
1. Q is calculated by taking the G and C readings 01 an admittance bridge. such as Boonton Electronics Model 33AS8. at
the specified frequency and substituting in the following
equation:
----
...-V
Q ~ 2".fC
......
G
2. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc.
is
dO. 97
0.96
-75
-50
-25
+25
+50
+15
+100
+125
TA. AMBIENTTEMPERATURE lOCI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-43
•
MMBV409L
MV409
CASE 182-02, STYLE 1 "
TO-92 (TO-226ACI
1
2o--j~1
Cathode
Anode
2
MAXIMUM RATINGS
MV409
Symbol
Rating
I MMBV409,L
Value
Unit
Reverse Voltage
VR
20
Volts
Forward Current
IF
200
mA
Forward Power Dissipation @ TA
Derate above 25'C
~
25°C
Junction Temperature
Po
280
2.8
Storage Temperature Range
Tsm
3o--j~1
Cathode
mW
mWI'C
Anode
VOLTAGE VARIABLE
CAPACITANCE DIODES
'c
'c
+125
-55 to + 150
TJ
*FR5 Board 1.0 x 0.75 x 0.062
I
225'
1.8
CASE 318-03, STYLE 8
SOT-23 (TO-236ABI
In.
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted.)
Characteristic - All Types
Reverse Breakdown Voltage
(lR ~ 10,.Adc)
Symbol
Min
Typ
Max
Unit
V(BR)R
20
-
-
Vdc
IR
-
-
0.1
,.Adc
TCC
-
300
-
ppml'C
Reverse Voltage Leakage Current
(VR ~ 15Vdc)
•
Diode Capacitance Temperature Coefficient
(VR ~ 3 Vdc, f ~ 1 MHz)
a, Figure of Merit
Ct, Diode Capacitance
VR = 3 Vdc, f = 1 MHz
pF
I
I
Device
MMBV409L, MV40S
Min
26
I
I
Nom
29
I
I
VR = 3Vdc
f = 50 MHz
(Note 1)
CR, Capacitance Ratio
C3iCa
f=1MHz
(Note 2)
Max
Min
Min
32
200
1.5
I
I
Max
1.S
NOTES ON TESTING AND SPECIACATIONS
(1) Q is calculated by taking the G and C readings of an admittance bridge, such as Boonton Electronics Model 33AS8, at the specified
frequency and substituting in the following equation:
Q ~ 211'fC
G
(2) CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-44
MMBV409L. MV409
40
36
~
32
~
28
5;;t
<5
~
c
r--.... -.......
. . . . 1'--.
1.5
~
i'-
24
~
16
Q
~
12
~
::E
r-.
0.5
'"d
0.3
~
'"
gj
::>
u
~
6
9
8 9 10
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
11
12
13
14
1.04
./
VR
0
~
./
15 Vdc
is
<;.
1.03
1.02
1.01
~
VR = 3Vdc
-
t = 1 MHz
./
;;t
V
0.99
<5
V
~
./
0
....- ~
Ct=Cc + Cj
z
g
./
0.98
,./"
,,/
i-"'"
is
0.006
0.002
0.001
-60 -40
10
VR, REVERSE VOLTAGE VOLTS
0.2
0.1
0.06
Ji:. 0.02
0.01
7
VR, REVERSE VOLTAGE IVOLTS)
100
60
20
10
6
2
1
0.6
V
.,./
1
z
0.7
::>
'"
o
I-
./
~
0
w
0::
1
V
~
.........
20
,./
d" 0.97
-20
0
+20
+40 +60
+80 +100 +120+140
TA, AMBIENT TEMPERATURE 1°C)
0.96
-75
-50
-25
+25
+50
+75
TA, AMBIENT TEMPERATURE IOC)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-45
+100
+125
•
SILICON EPICAP DIODES
MMBV432L
· .. designed for FM tuning, general frequency control and tuning, or any
top-of-the-line application requiring back-to-back diode configuration for
minimum signal distortion and detuning. This device is supplied in the
SOT-23 plastic package for high volume, pick and place assembly
requirements.
• High Figure of Merit -
CASE 318·03, STYLE 9
SOT·23 (TO·236AB)
Q = 100 (Typ) @ VR = 2.0 Vdc, f = 100 MHz
• Guaranteed Capacitance Range
• Dual Diodes -
Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching Over Specified Tuning Range
Guaranteed ± 1.0% (Max)
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
VR
14
Volts
Reverse Voltage
Forward Current
IF
200
mA
Total Power Dissipation @ TA = 25·C
Derate above 25·C
Po
350
2.S
mW
mW/"C
TJ
+125
·C
Tst~
-55 to +125
·C
Junction Temperature
Storage Temperature Range
DUAL
VOLTAGE·VARIABLE
CAPACITANCE DIODES
DEVICE MARKING
I MMBV432L = 4B
ELECTRICAL CHARACTERISTICS ITA = 25·C unless otherwise noted.)
Characteristic
Reverse Breakdown Voltage
(lR = 10~dc)
Symbol
Min
Typ
Max
Unit
V(BR)R
14
-
-
Vdc
Reverse Voltage Leakage Current
(VR = 9.0 Vdc)
IR
-
-
100
nAdc
Diode Capacitance
(VR = 2.0 Vdc, I = 1.0 MHz)
CT
43
-
48.1
pF
Capacitance Ratio C2ICS
(I = 1.0 MHz)
CR
1.5
-
2.0
-
Figure of Merit"
(VR = 2.0 Vdc, f = 100 MHz)
a
75
100
-
-
TYPICAL CHARACTERISTICS (Each Diode)
550
100
-- -- -----t-
70
~
tj 50
z
~
~
5 30
~
25 20
450
... v
./
./
~
........
./
0
G
150
50
10
10
1
o
V
V
/"
/'
4
TA = 25·C
f = 100MH,-
6
VR, REVERSE VOLTAGE (VOLTS}
VR, REVERSE VOLTAGE (VOLTS}
Figure 1. Diode Capacitance (Each Diode)
Figure 2. Figure of Merit versus Voltage
MOTOROLA SMALL·SIGNAL TRANSISTORS, FETs AND DIODES
5-46
10
MMBV432L
TYPICAL CHARACTERISTICS (Each Diode)
1.07
2000
~
1000
~ 1.04
>-
a;
~
o
z
;;:; 1.01
u
z
500
~
r--.
~200
VR ~2V/
6
::>
~
~ 100
d
~
~
§
50
20
10
20
30
0.98
G
'\
0.96
50 70 100
200 300
f, FREQUENCY IMHzl
./
.,./
-so
-B
0
B
0.02
0.Q1
~ =TA
125'C
=TA
1=
r- -
75'C
rr- =TA
25'C
o
~
100
125
Figure 4. Diode Capacitance versus Temperature
0.2
~ 0.1
.Ii: 0.05
so
TJ, JUNCTION TEMPERATURE I'CI
>-
illa
~ 4V
..-/ '/'"
~
ll§
~ ,............ VR
~ "/
-~
Figure 3. Figure of Merit versus Frequency
ffi 0.5
/'
V
!-
4
6
8
10
VR, REVERSE VOLTAGE IVOLTS)
12
14
Figure 5. Reverse Current versus Reverse Voltage
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-47
SILICON EPICAP DIODES
MMBV2101L thru
MMBV2109L
MV2101 thru MV2115
• •. designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and 1V tuning and AFC, general frequency control and
tuning applications; providing solid-state reliability in replacement of
mechanical tuning methods.
Also available in Surface Mount Package up to 33 pF.
• High Q with Guaranteed Minimum Values
CASE 182-02, STYLE 1 / ,
(TO·226AC)
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance -
10%
• Complete Typical Design Curves
1
2o---j~1
Cathode
MAXIMUM RATINGS
I
Symbol
1.0
d
0.5
V
./
1
~
./
~
o
3.0
6.0
9.0
12
15
18
21
24
27
30
0.001
-60
FIGURE 4 -
DIODE CAPACITANCE
VR = 3.0 Vdc
1.01 -f-f= 1.0 MHz
w
u
•
;j
~
0.98
o
i5
&0.97
0.96
-75
+60
+100
+140
1. LS is measured on a package having a short instead of a die,
using an impedance bridge (Boonton Radio Model 250A RX
Meter).
:::;
~ 1.00
0r;
f 0.99
+20
NOTES ON TESTING AND SPECIFICATIONS
1.03
i 1.02
~
-20
TA,AMBIENTTEMPERATURE I'CI
1.04
o
/
'"'
- 0.01
V
VR, REVERSE VOLTAGE IVOLTSI
N
/'
0.1
~
;:;:
ffi
/
VR - 20 Vdc
1.0
w
'"w
./
w
10
::>
'"
u
./
0
0.3
0.2
LEAKAGE CURRENT
100
TA =25'C
f =50 MHz
3.0
2.0
~
RGURE 3 -
5.0
"''"
w
RGURE OF MERIT
~
/~
. ",.",.
-50
/
--
./'
V
2. Cc is measured on a package without a die, using a capacitance bridge (Boonton Electronics Model 75A or equivalent).
3. Q is calculated by taking the G and C readings of an admittance bridge, such as Boonton Electronics Model 33ASB, at
the specified frequency and substituting in the following
equation:
Q
-25
+25
+50
+75
+100
+125
=
21TfC
G
4. CR is the ratio of CT measured at 3.0 Vdc divided by CT
measured at 25 Vdc.
TA,AMBIENTTEMPERATURE I'CI
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-52
SILICON PIN DIODE
MMBV3401L
· .. designed primarily for VHF band switching applications but also suitable
for use in general-purpose switching and attenuator circuits. Supplied in a
Surface Mount package.
CASE 318-03, STYLE 8
SOT·23 (TO-236AB)
• Rugged PIN Structure Coupled with Wirebond Construction for Optimum
Reliability
• Low Capacitance -
0.7 pF Typ at VR = 20 V
• Very Low Series Resistance at 100 MHz @ IF = 10 mAdc
0.34 Ohms (Typ)
MAXIMUM RATINGS
Rating
Value
Symbol
Reverse Voltage
Forward Power Dissipation @ TA
Derate above 25°C
=
25°C
Junction Temperature
Storage Temperature Range
3
Unit
VR
20
Vdc
PF
200
2.8
mW
mWrC
TJ
+125
°c
Tsta
-55 to +150
°c
o---j!+---o
Cathode
1
Anode
SILICON PIN
SWITCHING DIODE
DEVICE MARKING
I MMBV3401L
=
40
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
TVp
V(BR)R
35
-
-
-
1.0
pF
RS
-
0.7
Ohms
IR
-
-
0.1
p.A.
Reverse Breakdown Voltage
(IR = 10p.A)
Diode Capacitance
(VR = 20 V)
CT
Series Resistance (Figure 5)
(IF = 10 rnA)
f
= 100 MHz
Reverse Leakage Current
(VR
= 25 V)
Max
Unit
Volts
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 - SERIES RESISTANCE
FIGURE 2 - FORWARD VOLTAGE
1.6
50
I
I
I
1.4
'"~
S
1.2
\
w
'-'
z
«
!;;
~
~
w
~
~
1.0
O.B
\
~
30
'"'-'=>
I
TA
0
25°C
I
0
«
'"
~
i'-
0.4
40
.s
TA" 25 0 C
I'\.
0.6
;;{
20
0
/
~
-
10
If
0.2
o
o
V
o
2.0
4.0
6.0
8.0
10
12
14
16
0.5
IF. FO RWARD CURRENT (mA)
/
0.6
0.1
0.8
VF. FORWARD VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-53
09
1.0
•
MMBV3401L
FIGURE 3 - DIODE CAPACITANCE
FIGURE 4 - LEAKAGE CURRENT
100
40
20
VR· 25 VOLTS
0
1
Lt. 7.0
~
I-
5.0
~
;:;
~
~
TA 25'C
;'\
w
g
1.0
C
o.7
1.0
"uw
"''"w
>
2. 0
/
10
4.0
0.4
./
./
0.1
~ 0.04
IE
Ii o.5
./
0.01
0.004
0.2
+3.0
-3.0
-6.0
-9.0
-12
-15
-18
-21
-24
0.001
-60
-27
f"""
-20
+20
+60
+100
+140
TA, AMBIENT TEMPERATURE I'C)
VR, REVERSE VOLTAGE IVOLTS)
FIGURE 5 - FORWARD SERIES RESISTANCE TEST METHOD
soon
10pF
2. Use a short length of wire to short the test circuIt from
point "A" to "B". Then connect the power supply providing 10 mA of bias current to the test circuit.
Hi 0----11-(---'l!---""""'---O+
Boontonor B
Model33A
CA:J
O.U.T.
3. Adjust the capacitance scale arm of the bridge and the "G"
zero control for a minimum null on the "null meter".
The null occurs at approximately 130 pF.
Power Supply
L,o----+-i--o-
•
All measurements@ 100 MHz
4. Replace the wire short with the device to be tested. Bias
the device to a forward conductance state of 10 rnA.
5. Obtain a minimum nutl on the "null meter", with the
capacitance and conductance scale adjustment arms.
6. Read conductance (G) direct from the scale. Now read
the capacitance value from the scale (~13O pF) and subtrac' 120 pF which yields capaci,ance (el. The forward
resistance (RS) can now be calculated from:
For test fixture, leads should be as
short as possible.
To measure series resistance. a 10 pF capacitor is used to reduce
the forward capacitance of the circuit and to prevent shorting of
the external power supply through the bridge. The small signal
from the bridge is prevented from shorting through the power
supply by the 500-0hm ,resistor. The resistance of the 10 pF
capacitor can be considered negligible for this measurement.
2.533G
RS=---
1. The R F Admittance Bridge (Boon,on 33A or B) must be
initially balanced, with the test circuit connected to the
bridge test terminals. The conductance scale will be set at
zero and the capacitance scale will be set at 120 pF . as required when using the 100 MHz test coil.
C2
Where:
G - in micromhos,
C - in pF,
AS - in ohms
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-54
HIGH VOLTAGE SILICON PIN DIODE
MMBV3700L
MPN3700
· .. designed primarily for VHF band switching applications but also suitable
for use in general-purpose switching and attenuator circuits. Supplied in a
cost effective plastic package for economical, high-volume consumer and
industrial requirements.
• Long Reverse Recovery Time
trr = 300 ns (Typ)
CASE 182-02. STYLE 1
(TO-226AC)
• Rugged PIN Structure Coupled with Wirebond Construction for Optimum
Reliability
2
• Low Series Resistance @ 100 MHzRS = 0.7 Ohms (Typ) @ IF = 10 mAde
o----j!+__<>
Cathode
1
Anode
• Reverse Breakdown Voltage = 200 V (Min)
CASE 318-03. STYLE 8
SOT-23 (TO-236AB)
MAXIMUM RATINGS
MPN3700
Rating
Symbol
Reverse Voltage
=
Po
25°C
Junction Temperature
Storage Temperature Range
280
2.8
o----j j+----o
Cathode
1
Anode
Volts
200
2.0
I
3
Unit
200
VR
Total Device Dissipation @ TA
Derate above 25°C
IMMBV3700,L
Value
mW
mWrC
TJ
+125
°c
Tstg
-55to +150
°c
SILICON PIN
SWITCHING DIODES
DEVICE MARKING
I MMBV3700L
=
4R
ELECTRICAL CHARACTERISTICS (TA
=
25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)R
200
-
-
Volts
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
CT
-
-
1.0
pF
Series Resistance (Figure 5)
(IF = 10 mAl
RS
-
0.7
1.0
Ohms
Reverse Leakage Current
(VR = 150 Vdc)
IR
-
-
0.1
ILA
Reverse Recovery Time
(IF = IR = 10 mAl
trr
-
300
-
ns
Characteristic
Reverse Breakdown Voltage
(lR = lOILA)
Typ
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 1 -
FIGURE 2 - FORWARD VOLTAGE
SERIES RESISTANCE
800
1.4
700
TA
~ 1.2
::J::
~ 1.0
l;!
f'"
V>
0.8
~
0,6
0.4
=
25°C
TA = 25°C
;<600
"'"
............
..........
.s
-
~
I--
/
Q
~
300
/
~ 200
/fO.2
o
o
500
a 400
100
6
8
10
If, fORWARD CURRENT (rnA)
12
14
16
07
---
V
5-55
/
08
09
VF. FORWARD VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
/
10
•
MMBV3700L, MPN3700
FIGURE 3 - DIODE CAPACITANCE
FIGURE 4 - LEAKAGE CURRENT
10
100
8. 0
40
B. 0
w
!i
i!
13
~
2. 0
:: 1. 0
O. 6
~
o. 4'
10
~ 40
TA = 25°C
~
\
=>
:3 o. 8
~
L
VR,15VOlTS
~4.0
L
10
u
w
04
~
O. 1
/
~
>
IL
1/
~ 0.04
G
L
0.01
O. 2
0004
O. 0
0001
-60
-10 -20 -30 -40 -50
VR, REVERSE VOLTAGE (VOLTS)
-20
+20
+60
+100
+140
TA, AMBIENT TEMPERATURE lOCI
FIGURE 5 - FORWARD SERIES RESISTANCE TEST METHOD
50011
10pF
2 Use a short length of wire to short the test circuit from pomt
"A" to "B". Then connect the power supply provldmg 10 rnA
of bias current to the test circuit.
3. Adjust the capacitance scale arm of the bridge and the "G"
zero control for a minimum null on the "null meter". The
null occurs at approximately 130 pF.
4. Replace the wire short with the device to be tested. Bias
the device to a forward conductance state of 10 rnA.
5. Obtain a mmimum null on the "nu" meter", with the capacitance and conductance scale adjustment arms.
6. Read conductance (G) direct from the scale. Now read the
capacitance value from the scale (~130 pF) and subtract
120 pF which yields capacitance (C). The forward resistance
(RS) can now be calculated from:
Hi ~f-(---'f'!------"'VIf\.".----O+
Boonton
Model 33A or B
C::JOu.T.
Lo 0
All m.asurements @ 100 MHz
•
I-=
Power Supply
0For test fixture. leads should
be as short as possible.
To measure series resistance. a 10 pF capacitor is used to reduce
the forward capacitance of the circuit and to prevent shorting of
the external power supply through the bridge. The small signal
from the bridge is prevented from shorting through the power
supply by the SaO-ohm resistor. The resistance of the 10 pF capacitor can be considered negligible for this measurement.
1. The RF Admittance Bridge (Boonton 33A or B) must be initially balanced, with the test circuit connected to the bridge
test terminals. The conductance scale will be set at zero
and the capacitance scale will be set at 120 pF. as required
when using the 100 MHz test coil.
2.533 G
RS=----;;2
Where:
G - in micromhos,
C-inpF,
RS - in ohms
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-56
MMBl5226BL
thru
MMBl5257BL
CASE 318-03, STYLE 8
SOT-23 (TO-236AB)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Po
225
mW
1.8
mW/"C
R8JA
556
"CIW
Po
300
mW
2.4
mW/"C
R8JA
417
"CIW
TJ, Tstg
-55 to +150
"C
Total Device Dissipation FR-5 Board,'
TA ~ 25"C
Derate above 25"C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate," TA
Derate above 25"C
~
Unit
25"C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
3 0--,)-1'.;...- - 0 1
Cathode
'FR-5 ~ 1.0 x 0.75 x 0.062 in.
"Alumina ~ 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Anode
ZENER DIODES
Pinout: 1-Anode, 2-NC, 3-Cathode (VF = 0_9 V Max @ IF = 10 rnA for all types_)
Marking
Test
Current
Izr
mA
Zener
Voltage
VZ(:t:5%1
Nominal
MMBZ5226BL
MMBZ5227BL
MMBZ5228BL
MMBZ5229BL
MMBZ5230BL
8A
BB
BC
BD
BE
20
20
20
20
20
MMBZ5231BL
MMBZ5232BL
MMBZ5233BL
MMBZ5234BL
MMBZ5235BL
BF
8G
BH
BJ
8K
MMBZ5236BL
MMBZ5237BL
MMBZ523BBL
MMBZ5239BL
MMBZ5240BL
o Max
Zzr
IZ
Izr
@10%Mod
o Max
Max
IR
p.A
3.3
3.6
3.9
4.3
4.7
1600
1700
1900
2000
1900
2B
24
23
22
19
25
15
10
5.0
5.0
1.0
1.0
1.0
1.0
2.0
20
20
20
20
20
5.1
5.6
6.0
6.2
6.B
1600
1600
1600
1000
750
17
11
7.0
7.0
5.0
5.0
5.0
5.0
5.0
3.0
2.0
3.0
3.5
-4.0
5.0
8L
BM
BN
BP
BQ
20
20
20
20
20
7.5
B.2
8.7
9.1
10
500
500
600
SOO
600
6.0
8.0
8.0
10
17
3.0
3.0
3.0
3.0
3.0
6.0
6.5
6.5
7.0
8.0
MMBZ5241BL
MMBZ5242BL
MMBZ5243BL
MMBZ5244BL
MMBZ5245BL
BR
BS
8T
BU
BV
20
20
9.5
9.0
8.5
11
12
13
14
15
600
SOO
SOO
22
30
13
15
lS
2.0
1.0
0.5
0.1
0.1
B.4
9.1
9.9
10
11
MMBZ524SBL
MMBZ5247BL
MMBZ5248BL
MMBZ5249BL
MMBZ5250BL
BW
BX
8Y
BZ
B1A
7.B
7.4
7.0
S.S
S.2
1S
17
lB
19
20
sao
sao
600
17
19
21
23
25
0.1
0.1
0.1
0.1
0.1
12
13
14
14
15
MMBZ5251BL
MMBZ5252BL
MMBZ5253BL
MMBZ5254BL
MMBZ5255BL
B1B
81C
B1D
81E
81F
5.S
5.2
5.0
4.S
4.5
22
24
25
27
2B
SOO
SOO
600
600
SOO
29
33
35
41
44
0.1
0.1
0.1
0.1
0.1
17
18
19
21
21
MMBZ525SBL
MMBZ5257BL
B1G
B1H
4.2
3.8
30
33
SOO
700
49
5B
0.1
0.1
23
25
Device
ZZK
IZ
= 0.25 rnA
sao
SOO
600
sao
=
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-57
@
VR
V
•
SILICON PIN DIODE
MPN3404
· .. designed primarily for VHF band switching applications but also suitable
for use in general-purpose switching and attenuator circuits. Supplied in a
cost effective TO-92 type plastic package for economical, high-volume consumer and industrial requirements.
CASE 182-02, STYLE 1
(TO-226AC)
• Rugged PIN Structure Coupled with Wirebond Construction for Optimum
Reliability
• low Series Resistance @ 100 MHzRS = 0.7 Ohms (Typ) @ IF = 10 mAdc
• Sturdy TO-92 Style Package for Handling Ease
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
Rating
VR
20
Volts
Forward Power Dissipation @ TA = 25·C
Derate above 25·C
PF
400
4.0
mW
mWfC
TJ
+125
·C
TstlL
-55 to +150
·C
Junction Temperature
Storage Temperature Range
C>o-..........
1
I~--oo 2
Anode....
Cathode
SILICON PIN
SWITCHING DIODE
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Symbol
Min
Typ
V(BR)R
20
-
-
Diode Capacitance
(VR = 15 Vdc, f = 1.0 MHz)
CT
-
1.3
2.0
pF
Series Resistance (Figure 5)
(IF = 10 mAl
RS
-
0.7
0.85
Ohms
Reverse Leakage Current
(VR = 15 Vdc)
IR
-
-
0.1
j.------1f-(- -......!P-----'''MIr-.- - 0 +
Boonton
Model 33A or B
LoO
I'~
A
0 UT
2. Use a short length of wire to short the test circuit from
point "A" to "B". Then connect the power supply providing 10 mA of bias current to the test circuit.
3. Adjust the capacitance scale arm of the bridge and the "G"
zero control for a minimum null on the "null meter".
The null occurs at approximately 130 pF.
Power Supply
LC_. . ". . ~·
All measurements@100MHz
4. Replace the wire short with the device to be tested. Bias
the device to a forward conductance state of 10 rnA.
5. Obtain a minimum null on the "null meter", with the
capacitance and conductance scale adjustment arms.
6. Read conductance (G) direct from the scale. Now read
the capacitance value from the scale (~13O pF) and subtract 120 pF which yields capacitance (C). The forward
resistance (RS) can now be calculated from:
short as possible.
To measure series resistance, a 10 pF capacitor is used to reduce
the forward capacitance of the circuit and to prevent shorting of
the external power supply through the bridge. The small signal
from the bridge is prevented from shorting through the power
supply by the SOO-ohm resistor. The resistance of the 10 pF
capacitor can be considered negligible for this measurement.
2.533G
RS=---
1. The RF Admittance Bridge IBoonton 33A or BI must be
C2
initially balanced, with the test circuit connected to the
bridge test terminals. The conductance scale will be set at
zero and the capacitance scale will be set at 120 pF, as required when using the 100 MHz test coil.
Where:
G - in micromhos,
C - in pF,
RS - in ohms
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-59
•
MPN3700 For Specifications, See MMBV3700
MSD6100X
CASE 29-04, STYLE 3
TO-92 ITO-226AA)
Anode 1
"I
MAXIMUM RATINGS
Rating
Reverse Voltage
Recurrent Peak Forward Current
Symbol
Value
Unit
VR
100
Vde
IF
200
rnA
IFM(surge)
500
rnA
Power Dissipation @ TA = 25'C
Derate above 25'C
PD(1)
625
5.0
mWrC
Operating and Storage Junction
Temperature Range
TJ, Tstg(1)
-55 to +135
'c
Peak Forward Surge Current
(Pulse Width = 10 !'Sec)
cQ)
3 Cathode
3
mW
2 Anode
DUAL SWITCHING DIODES
COMMON CATHODE
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Symbol
Min
Breakdown Voltage
(lLBAL = 100 pAde)
V(BR)
100
-
Reverse Current
(VR = 100 Vde)
(VR = 50 Vdc)
(VR = 50 Vdc, TA
IR
-
5.0
0.1
20
0.55
0.67
0.75
0.7
0.82
1.1
Characteristic
•
=
125'C)
Forward Voltage
(IF = 1.0 mAde)
(IF = 10 mAde)
(IF = 100 mAde)
Max
Reverse Recovery Time
(IF = IR = 10 mAde, VR = 5.0 Vdc, irr
=
Vdc
C
-
1.5
pF
trr
-
15
ns
1.0 mAde)
(1) Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: Po
Derate above 25'C - B.O mWrC, TJ = -65 to + 150'C, ruc = 125'CIW.
= 1.0 W @ TC = 25'C,
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-60
Vde
pAde
VF
Capacitance
(VR = 0)
Unit
MSD6102
CASE 29-04, STYLE 3
TO-92 (TO-226AA)
MAXIMUM RATINGS
Anode 1
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Recurrent Peak Forward Current
IF
200
mA
IFMlsurge)
500
mA
PO(1)
625
5.0
mW
mW/,C
TJ, Tstg(1)
-55 to +135
'C
Peak Forward Surge Current
IPulse Width = 101"')
Power Dissipation @ TA
Derate above 25'C
= 25'C
Operating and Storage Junction
Temperature Range
2 Anode
~
3 Cathode
DUAL DIODES
COMMON CATHODE
(1) Continuous package Improvements have enhanced these guaranteed MaxImum
Ratings as follows: Po = 1.0 W @ TC = 25'C, Derate above 25'C - 8.0 mW/,C,
TJ = -65 to + 150'C, IJJC = 125'CIW.
ELECTRICAL CHARACTERISTICS (fA = 25'C unless otherwise noted.)
Characteristic
Breakdown Voltage
(lIBRI = 100 pAdc)
Symbol
Min
VIBR)
70
Max
Unit
-
Vdc
0.1
pAdc
1.0
Vdc
Reverse Current
IVR = 50Vdc)
IR
Forward Voltage
(IF = 10mAdc)
VF
-
Capacitance
(VR = 0)
C
-
3.0
pF
Reverse Recovery Time
(IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc)
trr
-
100
ns
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-61
•
MSD6150
CASE 29-04, STYLE 4
TO-92 (TO-226AA)
"I
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Peak Forward Recurrent Current
IF
200
rnA
IFM(surge)
500
rnA
PD(1)
625
5.0
mW
mW'C
TJ, Tstg(1)
-55to +135
'c
Rating
Peak Forward Surge Current
(Pulse Width = 10 /Ls)
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Operating and Storage Junction
Temperature Range
ctJ).
3
Cathode 1
2 Cathode
DUAL DIODES
COMMON ANODE
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
Characteristic
Breakdown Voltage
(I(BR) = 100 !LAde)
Symbol
Min
Typ
Max
Unit
V(BR)
70
-
-
Vdc
-
0.1
/LAdc
Reverse Current
IVR = 50 Vdc)
IR
-
Forward Voltage
IIF = 10 mAdc)
VF
-
0.80
1.0
Vdc
C
-
5.0
8.0
pF
trr
-
-
100
ns
Capacitance
IVR = 0)
Reverse Recovery Time
(IF = IR = 10 mAdc, VR
=
5.0 Vdc, irr
=
1.0 mAde)
(1) Continuous package Improvements have enhanced these guaranteed MaXimum Ratings as follows: Po = 1.0 W @TC = 25'C, Derate
above 8.0 mWrC, Po = 10 W@TC = 25'C, Derate above 80 mWrC, TJ, Tstg = -55 to +150', 8JC = 12.5'CIW, 8JA = 125'C.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-62
SILICON EPICAP DIODES
MVI04
· .. designed for FM tuning, general frequency control and tuning, or any
top-of-the-line application requiring back-to-back diode configurations for
minimum signal distortion and detuning. This device is supplied in the popular TO-92 plastic package for high volume, economical requirements of
consumer and industrial applications.
• High Figure of Merit Q = 140 (Typ) @ VR
= 3.0 Vdc, f =
CASE 29-04, STYLE 15
(TO-226AAI
100 MHz
• Guaranteed Capacitance Range
37-42 pF @ VR = 3.0 Vdc (MV104)
• Dual Diodes -
Save Space and Reduce Cost
Pin
• TO-92 Package for Easy Handling and Mounting
• Monolithic Chip Provides Near Perfect Matching (Max) Over Specified Tuning Range
"
Guaranteed ± 1%
w
Pin3
Al
3
A2
Pin 2
C
MAXIMUM RATINGS (Each Device)
Rating
Symbol
Value
Unit
VR
32
Volts
Forward Current
IF
200
rnA
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PF
280
2.8
mW
mW/oC
TJ
+125
°c
TstQ
-55 to +150
°c
Reverse Voltage
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA
25°C unless otherwise noted)
=
Characteristic
Reverse Breakdown Voltage
OR = 10 !-lAde)
Reverse Voltage Leakage Current TA
(VR = 30 Vdc)
TA
DUAL
VOLTAGE-VARIABLE
CAPACITANCE DIODES
= 25°C
= 60°C
Symbol
Min
Typ
V(BR)R
32
-
-
Vdc
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
Cr, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
Min
MV104
37
FIGURE 1 -
I
I
-
-
50
500
nAdc
-
280
400
ppmfC
*Q, Figure of Merit
CR, Capacitance Ratio
VR = 3.0 Vdc
f = 100 MHz
f = 1.0 MHz
Max
Min
42
100
I
I
~7
Min
140
2.5
DIODE CAPACITANCE (Each Device)
o-
r--...
'"'
Z
5"
:.
r-.....
40
......... r--.
<3
MVI04
w
'"'"o
ti
.........
0
10
03
O.S
10
20
30
50
10
VR. REVERSE VOLTAGE (VOLTS)
.......
-.....
20
30
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-63
C3/C3o
Typ
100
w
Unit
-
-
IR
Max
I
I
Max
2.8
..
MV104
TYPICAL CHARACTERISTICS (Each Device)
FIGURE 2 - FIGURE OF MERIT versus VOL TAGE
550
450
o
w
~
/'
~ 250
15
0/
500
"
:;
100
......
w
TA" 25°C
1"100MHz-
,/
d
...
i!j
'"
~
1000
V
~ 350
50
/"
V
,/
~
FIGURE 3 - FIGURE OF MERIT versus FREQUENCY
2000
~
..
-
=>
VR" 30 Vdc
'"
100
d
./
50
3.0
6.0
9.0
12
15
18
21
24
27
10
30
20
30
VR J
./:
1.030
:::;
i 1.020
o
~ 1.010
•
1.000
-
~
?'
§0.990 ~ ~
/ V
g0.980
U
i5
t; 0.910
V '/
V
0.960
-75
-50
70
100
100
3110
FIGURE 5 - REVERSE CURRENT versus REVERSE VOLTAGE
FIGURE 4 - OIOOE CAPACITANCE versus TEMPERATURE
Q
50
f. FREQUENCY (MHz)
1.040
':1...
"
10
o
VR. REVERSE VOLTAGE (VOLTS)
~
i'"
TA" 250C
--
0
~
/4.0 V
30V -
I
50
75
50
1...
20
10
_
50
20
~
1.0
- i
f---
TI\"1150C
~
75°C
~ 0.50
NO~~:~~Zi5~~o CT _ f---
I
100
~.
:=
020
-
25°C
0.10
0.05
002
00 1
-25
25
100
125
5.0
TJ. JUNCTION TEMPERATURE (DC)
10
15
10
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-64
25
30
MV10SG For Specifications, See MMBVI09L
MV409 For Specifications, See MMBV409L
MV1401,
MV1403,
MV1404,
MVl40S,
SILICON HYPER-ABRUPT TUNING DIODES
· .. designed with high capacitance and a capacitance change of greater
than TEN TIMES for a bias change from 2.0 to 10 volts. Provides tuning
over broad frequency ranges; tunes AM radio broadcast band. general AFC
and tuning applications in lower RF frequencies.
2
MV1403. H
MV1404. H
MV1405. H
• High Capacitance: 120-550 pF
H
H
H
H
• Large Capacitance Change with Small Bias Change
• Guaranteed High Q
CASE 146-01
(DO-204AB)
• Available in Standard Axial Glass Packages
1
• H Suffix Devices with 100% Screening
120-550 pF
12 VOLTS
HIGH TUNING RATIO
VOLTAGE-VARIABLE
CAPACITANCE DIODES
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Volts
Reverse Voltage
VR
12
Forward Current
IF
250
mA
Device Dissipation @ TA = 25'C
Derate above 25'C
Po
400
2.67
mW
mW/,C
TJ
+175
'C
Tst
-65 to +200
'C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA
=
25'C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(lR = 10/LAde)
Symbol
Min
V(BR)R
12
Typ
-
Max
-
Unit
Vde
Leakage Current at Reverse Voltage
(VR = 10 Vde. TA = 25'C)
IR
-
-
0.1
/LAde
Series Inductance
(f = 250 M Hz. Lead Length
= 1/16")
LS
-
5.0
-
nH
Case Capacitance
(f = 1.0 MHz. Lead Length
Cc
-
0.25
-
pF
= 1/16")
Cr. Diode Capacitance
VR
= 1.0 Vdc. f = 1.0 MHz
VR
Q. Figure of Merit
= 2.0 Vdc. f = 1.0 MHz
pF
pF
Min
Nom
Max
H
468
550
633
-
-
H
H
H
-
-
-
-
140
96
200
175
120
250
Device
MV1401.
MV1403.
MV1404.
MVl405,
-
-
-
Min
-
Nom
= 2.0 Vdc.
= 1.0 MHz
VR
f
~
z
;!: 100
Min
Min
14
-
..........
50
==
§
30
-
_MVj403
~
20
-
-MV/404/
~u:
~
TA - 25'C
f = 1 MHz
/MVl401
MVl405
'" r-............ r-... "
/
"-
................
r-..
r-.....
10
4
5
6
7
r--
-""-
10
VR. REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-65
= 1.0 MHz
200
200
200
200
210
144
300
.!'
........ '...f-.. ..........
C2/C10
f
Min
......
........ r-.... . . . .
= 1.0 MHz
-
500
%200
Cl /Cl0
f
Max
FIGURE 1 - DIODE CAPACITANCE versus
REVERSE VOLTAGE
300
TR. Tuning Ratio
-
-
10
10
10
•
MV1401,H MV1403,H MV1404,H MV1405,H
100% SCREENING FOR HIGH RELIABILITY
MV1401H, MV1403H, MV1404H, MV1405H are screened with the
following tests:
Internal Visual Inspection
per 12M53957B (MIL-STD-750 METHOD 2073 PARAGRAPH 3.3
AND METHOD 2074 PARAGRAPH 3.1.3)
High Temperature Storage
TA = 200 o C, t;;;' 48 hours
Thermal Shock (Temperature Cycling)
MIL-STD-202, Method 107. Condition C except 10 cycles
c~ntinuouslY performed
t(extremes) = 15 minutes
Constant Acceleration
MIL-STD-750, Method 2006
20,000 G's (V1 axis only)
•
Hermetic Seal
MIL-STD-750. Method 1071
Fine Leak - Condition G
Gross Leak - Condition D, Step 1
Electrical Test
IR and CT
High Temperature Reverse Bias
TA = 120°C ± 5°C, t;> 96 hours
VR = 80% of V(BR)R MIN
Lower temperature till TA = 30 ± 5°C.
Maintain this temperature prior to removal of Reverse Bias
Voltage. Perform Electrical Test within 24 hours following
bias removal.
Electrical Test
IR and CT
PARAMETER TEST METHODS
1. LS. SERIES INDUCTANCE
LS IS measured on a shorted package at 250 MHz uSing an
Impedance bridge (Boonton Radio Model 250A RX Meter).
2. CC. CASE CAPACITANCE
Cc is measured on an open package at 1.0 MHz using a capacl·
tance bridge (Boonton Electronics Model 75A or equivalent).
3. CT. DIODE CAPACITANCE
(Cr::; Cc + CJ) Cr is measured at 1.0 MHz uSing a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
4. TR. TUNING RATIO
TR isthe ratio of CT measured at2.0 Vdc (1.0 Vdcfor MV1401)
divided by CT measured at 10 Vdc.
6. Q. FIGURE OF MERIT
Q is calculated by taking the G and C readings of an admittance
bridge atthe specified frequency and substituting in the following equation:
2trfC
0="(3
(Boonton Electronics Model 33ASB). Use Lead Length = 1 /16'.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-66
M V2101 thru MV2115
For Specifications,
See MMBV2101L
MVAMI08
MVAMI09
MVAMl15
MVAM125
SILICON TUNING DIODES
.. designed for electronic tuning of AM receivers and high capacitance,
h igh tuning ratio applications.
Capacitance Ratio • High
MVAM108, 115, 125
CR
=
15 (Min),
CASE 182-02, STYLE 1
(TO-226AC)
Diode Capacitance - Ct = 440 pF (Min) • Guaranteed
560 pF (Max) Ca! VR = 1.0 VDc, f = 1.0 MHz, MVAM108, MVAM115,
,!'
MVAM125
Figure of Merit • Guaranteed
= 150 (Min) @ VR = 1.0 Vdc, f = 1.0 MHz
Q
2
MAXIMUM RATINGS
Rating
Reverse Voltage
MVAM108
MVAM109
MVAM115
MVAM125
Symbol
Value
Unit
VR
12
15
18
28
Volts
Forward Current
IF
50
mA
Power Dissipation @ TA = 25°C
Derate above 25°C
Po
280
2.8
mW
mwrc
- 55 to + 125
°C
Operating and Storage Junction
2~l+---ol
Cathode
Anode
TUNING DIODES
WITH VERY HIGH
CAPACITANCE RATIO
Temperature Range
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted, Each Device)
Characteristic
Symbol
Breakdown Voltage
(lR = 10 /kAdc)
Min
Typ
Max
12
15
18
28
-
-
-
V(BR)R
MVAM108
MVAM109
MVAM115
MVAM125
Reverse Current
(VR = 8.0 V)
(VR = 9.0 V)
(VR=15V)
(VR = 25 V)
Case Capacitance
(I = 1.0 MHz, Lead Length 1/16")
Diode Capacitance (2)
(VR = 1.0 Vdc, 1= 1.0 MHz)
MVAM108, 115, 125
MVAM109
Figure of Merit
Vdc
-
nAdc
IR
-
-
100
100
100
100
TCC
-
435
-
ppmrc
Cc
-
0.18
-
pF
560
520
MVAM108
MVAM109
MVAM115
MVAM125
Diode Capacitance Temperatujre Coefficient (1)
(VR = 1.0 Vdc, 1= 1.0 MHz. TA = -40°C to +S5°C)
Unit
Ct
pF
440
400
500
460
Q
150
-
-
C1IC8
15
12
15
15
-
-
-
(I = 1.0 MHz, Lead Length 1/16", VR = 1.0 Vdc)
Capacitance Ratio
(I = 1.0 MHz)
MVAM10S
MVAM109
MVAM115
MVAM125
C1/C9
C1/C15
Cl/C25
-
-
-
-
NOTES:
1. The effect of increasing temperature 1.0oe, at any operating point, is equivalent to lowering the effective tuning voltage 1.25 mV. The percent change of
capacitance per °C is nearly constant from -40°C to + lOOoe.
2. Upon request, diodes are available in matched sets. All diodes in a set can be matched for capacitance to 3% or 2.0 pF (whichever is greater) at all points
along the specified tuning range.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-67
•
MVAM108, MVAM109, MVAM115, MVAM125
FIGURE 1 - TYPICAL AM RADIO APPLICATION
To IF
AGe 0---1--+
MVAM
xxx
Tuning Voltage
FIGURE 2 - CAPACITANCE versus REVERSE VOLTAGE
FIGURE 3 - FIGURE OF MERIT
1000
700
50 0
0
0
0
0
0
0
0
,,' "
TA~25OC
f ~ 1 0 MHz
V
0
/
0
roo..
"\.',
f'...
or-
0 - I-- MVAM10S:':: MVAM 1
t-.
MVAM 115
I
2.0
6.0
10
14
18
-
1/
/V
0
0
I--
22
L
"V
\'\
0
0
'-
0
MtM?5
.-
4. 0 -
10
26
2.0
3.0
50
70
VR. REVERSE VOLTAGE (VOLTS)
VR- REVERSE VOLTAGE (VOLTS)
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
5-68
10
20
Tape and Reel
Specifications
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-1
..
•
Embossed Tape and Reel
Tape and Reel
Data for
Discrete
Surface Mount
Devices
Embossed Tape and Reel is used to facilitate automatic pick and place
equipment feed requirements. The tape is used as the shipping container
for various products and requires a minimum of handling. The antistatic!
conductive tape provides a secure cavity for the product when sealed with
the "peel-back" cover tape.
•
•
•
•
•
•
•
Two Reel Sizes Available (7" and 13")
Used For Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA 481
MLL-34, SOT-23, SOT-143 in 8 mm Tape
MLL-41, 50-8, SOT-89, 50T-223 in 12 mm Tape
DPAK, 50-14, 50-16 in 16 mm Tape
Ordering Information
Use the standard device title and add the required suffix as listed in the
option table below. Note that the individual reels have a finite number of
devices depending on the type of product contained in the tape. Also note
the minimum lot size is one full reel for each line item, and orders are
required to be in increments of the single reel quantity. Minimum order
$200.00!line-line.
PACKAGES
MLL-34
50-8
MLL-41
50-14
50T-23
50-16
50T-143 DPAK
50T-23
50T-143
MLL-34
8mm
8mm
8mm
) o§h~.~n.~i§o )
) o~l~l~l§]o )
MLL-41
50-S, 14, 16
12mm
12,16mm
~ ~f [gf [~( [~f
0
)
~ 0-0-0--0-0
0
~15liQI~
) o~°[ef[6f[~f )
DPAK
~
1]J~[gD~
..
16mm
0000000
0000000
[Q][Q][Q]lU]
DIRECTION
OF FEED
per Reel
Reel Size
(inch)
Tape & Reel
Lot Size
IMin}
Device
Suffix
8
8
3,000
10,000
7
13
3,000
10,000
Tl
T3
SOT-143
8
8
3,000
10,000
7
13
3,000
10,000
Tl
T3
MLL-34
8
8
2,000
5,000
7
13
2,000
5,000
Tl
T3
MLL-41
12
12
1,000
5,000
7
13
1,000
5,000
13
SO-8
12
12
500
2,500
7
13
500
2,500
Rl
R2
SOT-89
12
lK
4K
7
13
lK
4K
T1
T3
SOT-223
12
lK
4K
7
13
lK
4K
-
SO-14
16
16
500
2,500
7
13
500
2,500
R1
R2
SO-16
16
16
500
2,500
7
13
500
2,500
R1
R2
DPAK
16
1,800
13
1,800
RL
Tape Width
Imm}
SOT-23
Package
Device
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-2
T1
TAPE AND REEL DATA FOR DISCRETE SMD
CARRIER TAPE SPECIFICATIONS
01
FOR COMPONENTS
2.0 mm x 1.2 mm
AND LARGER
FOR MACHINE REFERENCE
ONLY
INCLUDING DRAFT AND RADII
CONCENTRIC AROUND BO
USER DIRECTION OF FEED
RMIN.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS "R"
WITHOUT DAMAGE
Ir---
TYPICAL
COMPONENT CAVITY
CENTER LINE
100mm
13.937 " ) "
rlmmMAX
0
I
I
~r-I
__
• c:::.:-.-~-_
+-=
1·-
[1.03~'~. ~AX
~-+
250 mm
19843,,)---1
CAMBER ITOP VIEW)
ALLOWABLE CAMBER TO BE 1 mm/l00 mm NONACCUMULATIVE OVER 250 mm
DIMENSIONS
rape
Size
B1 Max
D
D1
E
F
K
P
Po
Pz
RMin
8mm 4.2mm 1.5+0.1 mm 1.0 ± 0.1 mm 1.75±0.1 mm 3.5±0.05mm 2.4mm Max 4.0±0.1 mm 4.0±0.1 mm 2.0±0.1 mm 25mm
1.165")
-0.0
Min
1.069 ± .004") 1.138 ± .002")
1.094")
1.157± .004") 1.157 ± .004") 1.079 ± .002") 1.98")
1.059 + .004"
1.039")
-0.0)
12mm 8.2mm
1.323")
1.5mm Min
1.060")
5.0±0.05mm 4.5mm Max 4.0±0.1 mm
1217 ± .002")
1.177")
1.157± .004")
TMax
W
0.400mm 8.0±.30mm
1.016")
1.315 ± .012")
25mm
11.18")
12±.30mm
1.470±.012")
2.0±.010mm 40mm
1.079 ± .004") 11.575")
16±.30mm
1.630 ± :012")
8.0±.01 mm
1.315±.004")
16mm 12.1 mm
1.476")
7.5±0.10mm
1.295 ± .004")
6.5mm
1.256")
4.0±0.1 mm
1.157±.004")
8.0±.01 mm
1.315 ± .004")
12.0 ±.004 mm
1.472 ± .004")
Metric Dimensions Govern -
English are in parentheses for reference only.
NOTE 1: AQ. BO. and Ko are determined by component size. The clearance between the components and the cavity must be within .05 min. to .50
max., the component cannot rotate more than 10° within the determined cavity.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-3
•
TAPE AND REEL DATA FOR DISCRETE SMD
REEL DIMENSIONS
Metric Dimensions Govern -
English are in Parentheses for Reference only.
-I
T711~1.5mmMIN
lS::
I
~-
,-
...L..L.... I
A
20.2mmMIN I
(.795"1
\
"'-'
13.0 mm ± 0.5 mm
1.512" ± .002"1
1.06"1
"
~t~
~_//
\-TMAX
~ f 50mm MIN
\ --I
T
11.969"1
-----L
FUll RADIUS
Size
A Max
8mm
330mm
(12.992"1
8.4mm+l.5mm, -0.0
1.33" + .059", - 0.001
14.4 mm
1.56"1
12mm
330mm
112.992"1
12.4mm+2.0mm, -0.0
1.49" + .079", - 0.00)
18.4 mm
1.72"1
16mm
360mm
114.173"1
16.4mm+2.0mm, -0.00
1.646"+.078", -0.001
22.4mm
1.882"1
G
TMax
•
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-4
TO-92 EIA
Radial Tape Reel
or Ammo Pack
TO-92 EIA
RADIAL
TAPE REEL
OR
AMMO
PACK
Radial tape reel and ammo pack of the reliable TO-92 package are the
best methods of capturing devices for automatic insertion in printed circuit
boards. These methods of taping are compatible with various equipment for
active and passive component insertion.
•
•
•
•
•
•
Available on 360 mm Reels
Available in Ammo Pack (Fan Fold Box)
Accommodates Various Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing For Soldering
Conforms to EIA ACP Standard 1375 (RS-468)
Ordering Notes:
When ordering radial tape on reel or in ammo pack. specify the style per
Figures 3 thru 8. Add the suffix "RLR" and "Style" to the device title. i.e.
MPS3904RLRA. This will be a standard MPS3904 radial taped and supplied
on a reel per Figure 3.
Reel Information - Minimum order quantity 1 Reel/$200LL.
Order in increments of 2000.
Ammo Pack Information - Minimum order quantity 1 Boxl$200LL.
Order in increments of 2000.
NOTES:
1. CONTOUR Of PACKAGE BEYOND ZONE "~'IS
UNCONTROLLED.
2. DIM "f"' APPliES BElWEEN "H" AND "L". DIM
"D" & "S" APPliES BElWEEN "L" & 12.70mm
10.5"1 fROM SEATING PLANE LEAD DIM IS
UNCONTROLLED IN "H" & BEYOND 12 70mm
10.5"1 fROM SEATING PLANE.
3. CONTROLLING DIM: INCH.
DIM
A
B
C
D
f
G
H
J
•
CASE 29-04
TO-226AC
(TO-92)
L
N
P
R
S
MllllMmRS
MIN
MAX
4.32
5.33
4.45
5.liI
3.18
4.19
0.41
0.55
041
0.46
1.39
1.15
2.54
2.42
2.66
12.70
6.35
2.04
2.66
2.93
3.43
0.39
0.50
INCHES
MIN
MAX
0.170
0.210
0.175
0.205
0.125
0.165
0.Q16
0.022
0.016
0.019
0.055
0.045
0.100
0.095
0.105
0.500
0.250
0.080
0.105
0.115
0.135
0.015
O.Olil
MOTOROLA SMALL-S)GNAL TRANSISTORS, FETs AND DIODES
6-5
-
•
TO-92 EIA RADIAL TAPE REEL OR AMMO PACK
Figure 1. Device Positioning on Tape
(_."r~2BI!/>
'., r\ . ![ ,/
\. . . \\ i ,/. ,../
T1 ~
T~·
02·
':'It
I
., I. T2
,I,
·B"
Specification
Inches
Symbol
Millimeter
Min
Max
Min
Max
A
Component Body Height
0.170
0.210
4.32
5.33
B
Component Body Width
0.125
0.165
3.18
4.19
5.21
C
Component Body Length along Tape
0.1748
0.2052
4.44
D
Tape Feedhole Diameter
0.145
0.1693
3.7
4.3
Dl
Component Lead Width Dimension
0.Q16
0.022
0.41
0.56
D2
Component Lead Thickness Dimension
0.015
0.020
0.38
0.51
Component Lead Pitch
0.0945
0.110
2.4
2.8
0
0.0985
0
2.5
0.3346
0.3741
8.5
9.5
Fl, F2
•
Item
H
Bottom of Component to Seating Plane
H1
Feedhole Location
H2A
Deflection Left or Right
0
0.039
0
1
H2B
Deflection Front or Rear
0
0.051
0
1.3
0
1.2600
0
32
0.7086
0.768
18
19.5
Feedhole to Seating Plane
0.610
0.649
15.5
16.5
Defective Unit Clipped Dimension
0.3346
0.433
8.5
11
L1
Lead Wire Enclosure
0.09842
-
2.5
-
P
Feedhole Pitch
0.4921
0.5079
12.5
12.9
P1
Feedhole Center to Center Lead
0.2342
0.2658
5.95
6.75
P2
First Lead Spacing Dimension
0.1397
0.1556
3.55
3.95
T
Adhesive Tape Thickness
0.06
0.08
0.15
0.20
T1
Overall Taped Package Thickness
-
0.0567
-
1.44
T2
Carrier Strip Thickness
0.014
0.027
0.35
W
Carrier Strip Width
0.6889
0.07481
17.5
19
W1
Adhesive Tape Width
0.2165
0.2841
5.5
6.3
W2
Adhesive Tape Position
-
0.01968
-
0.5
H3
Feedhole to Overall Component Height
H4
Feedhole to Bottom of Component
H5
L
0.65
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
Maximum alignment deviation between leads not to be greater than 0.2 Mm.
Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 Mm.
Component lead to tape adhesion must meet the pull test requirements established in Figures 10, l ' and 12.
Maximum non-cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
Holddown tape not to extend beyond the edge's) of carrier tape and there shall be no exposure of adhesive.
No more than 3 consecutive missing components is permitted.
A tape trailer. having at least three feed holes is required after the last component.
Splices shall not interfere with the sprocket feed holes.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-6
TO-92 EIA RADIAL TAPE REEL OR AMMO PACK
REEL STYLES
Figure 2. Reel Specifications
ARBOR HOLE OIA.
3O.S mm ± 0.25 mm
COREDIA.
82mm ± 1mm
__ i
--- ----
MARKING NOTE
SEE FIGURE 13
---=--=
....n••
, ",
[
RECESS DEPTH
~
MAX
I
1FT
•.. .,,-.-~
,
., - • ,-
HUB RECESS
762mm:!: lmm
I'I
Material used must not cause deterioration of components or degrade lead solderability.
Figure 3. Style A
Figure 4. Style B
ADHESIVE TAPE ON REVERSE SIDE
CARRIER STRIP
CARRIER STRIP
000
FEED~=..,.._O_ _O_ _O_ _O_ _ _....
Rounded size of transistor and adhesive tape visible.
Flat side of transistor and carrier strip visible (adhesive
tape on reverse side).
Figure 5. Style E
Figure 6. Style F
ADHESIVE TAPE ON REVERSE SIDE
CARRIER STRIP
ADHESIVE TAPE
CARRIER STRIP
FEED~_.,.._O_ _O_ _O_ _O_ _--,
000
Flat side of transistor and adhesive tape visible,
Rounded side of transistor and carrier strip visible (adhe·
sive tape on reverse side).
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-7
..
TO-92 EIA RADIAL TAPE REEL OR AMMO PACK
AMMO PACK STYLES
Figure 7. Style M
Figure 9. Ammo Pack Dimensions
Figure 8. Style P
"--l
252 mm MAX
9.92"
Style M ammo pack is equivalent to
Styles E and F of reel pack dependent
on feed orientation from box.
2.~
Style P ammo pack is equivalent to
Styles A and B of reel pack dependent
on feed orientation from box.
MAX
ADHESION PULL TESTS
Figure 11. Test #2
Figure 10. Test #1
Figure 12. Test #3
500 GRAM PUll FORCE
HOLDING
FIXTURE
The component shall not pull free with
a 300 gram load applied to the leads
for 3 ± 1 second.
The component shall not pull free with
a 70 gram load apptied to the leads for
3 ± 1 second.
Figure 13. Marking for Reel/Ammo Pack
Figure 14. TO-92 Tape and Reel Shipping Container
CUTOUT FOR READING RE~
DEVICE
REV:
CUSTP/N
QA LOT
#:
REV:
CONTROL #:
SOURCE:
OA
#:
D/C:
REV:
There shall be no deviation in the
leads and no component leads shall
be pulled free of the tape with a 500
gram load applied to the component
body for 3 ± 1 second.
QTY:
~
HEAWDUTYWHITE
CARBON LAYERED / '
CORRUGATED
BOX
~'Q
LABEL
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-8
LABel
TO-92 Tape Reel Pro Electron
TO-92
Tape Reel
and
Lead Forming
Radial tape reel and ammo pack of the reliable TO-92 package are the
best methods of capturing devices for automatic insertion in printed circuit
boards. These methods of taping are compatible with various equipment
for active and passive component insertion.
•
•
•
•
•
•
Available on 365 mm Reels
Available in Ammo Pack (Fan Fold Box)
Accommodates Various Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing for Soldering
Conforms to EIA ACP Standard 1375 (RS-4681*
*EIA ACP reel diameter 360 mm. Motorola is 365 mm.
When ordering radial type ON REEL specify the style per Figure 4. Add
the suffix to the device title, i.e. BC237ARL 1. This will be a standard
BC237A radial taped and supplied on a reel per RL 1 option.
NOTES,
1. CONTOUR Of PACKAGE BEYOND ZONE "P" IS
UNCONTROLLED
2. DIM "f" APPLIES BElWEEN "H" AND '"l". DIM
"0" & "5" APPLIES BETWfEN "L" & 12.7Omm
(0.5"' fROM SEATING PLANE. LEAD DIM IS
UNCONTROLLED IN "H" & BEYOND 12.70mm
(0.51 fROM SEATING PLANE.
~ CONTROLLING DIM, INCH.
DIM
A
B
C
0
f
G
H
J
K
L
CASE 29-04
TO·226AC
(TO-92)
N
P
R
S
MlLUMrnIIS
MAX
MIll
~32
4.45
.18
0.41
0.41
1.15
2.42
12.10
6.35
2.04
2.93
3.43
0.39
5.33
5.20
4.19
0.55
0.48
1.39
2.54
2.66
-
2.66
0.50
INCHES
MIN
MAX
0.110
0.175
0.125
0.016
0.016
0.045
0.095
0.500
0.250
0.0811
0.115
0.135
0.015
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-9
0.210
0.205
0.165
0.022
0.019
0.055
0.100
0.105
-
0.105
0.020
•
TO-92 TAPE REEL AND LEAD FORMING (PRO ELECTRON)
Figure 1. Taping Procedure
Specification
Symbol
0
F
F1
H
H1
H2A,B
H3
L
l1
_:
P
P1
P2
P3
T
T1
T2
W
W1
W2
Item
Tape Feed Hole Diameter
Overall Component Lead Pitch
Component Lead Pitch
Height of Seating Plane
Feed Hole Location
Deflection Front or Rear, Left or Right
Feed Hole to Bottom of Component
Lead Length After Component Removal
Lead Wire Enclosure
Feed Hole Pitch
Feed Hole - Component Centre Distance
Feed Hole - First Lead Distance
Component Centre Pitch
Total Tape Thickness
Overall Taped Package Thickness
Carrier Tape Thickness
Overall Tape Width
Holddown Tape Width
Holddown Tape Position
Min
mm
Max
mm
3.7
4.8
2.4
15.5
8.5
0
18
0
2.5
12.4
5.95
3.02
11.7
0.5
4.3
5.8
2.9
16.5
9.75
1.0
19
11
-
0.38
17.5
5.7
0
-
13
6.75
4.35
13.7
0.9
1.44
0.68
19
6.3
0.5
Remarks
Note 2
Notes 9 & 10
Note 1
Notes 3 & 8
Note 4
Note 5
Note
Note
Note
Note
Note
6
6
7
7
7
. ,. Maximum alignment deviation between leads not to be greater than 0.2 Mm.
2. As illustrated, the clearance to the lead standoff form shall be defined to the point of radius for the standoff form.
3. Defective components shall be clipped from the carrier tape such that the remaining protrusion (LI does not exceed a maximum of 11 Mm.
4.
5.
6.
7.
, 8.
9.
10.
Component lead to tape adhesion must meet the pull test requirements established in Figures 4, 5 and 6.
Maximum non-cumulative variation between tape and feed holes shall not exceed 1.0 mm in 20 pitches.
Overall taped package thickness, including component leads and tape splices shall not exceed 1.44 mm.
Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
No more than 3 consecutive missing components is permitted.
A tape trailer having at least three feed holes is required after the last component.
Splices shall not interfere with the sprocket feed holes.
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-10
TO-92 TAPE REEL AND LEAD FORMING (PRO ELECTRON)
Figure 2. REEL Pack Dimensions
30TYP
ARBOR HOLE DIA.
REEL MARKING
ISEE MARKING
NOn:S 1 AND 21
3l0MAX
RECESS DEPTH
-I
9.5;IN
80
--:~
r-
44 MAX
DIMENSIONS IN MILL/METRES
Figure 3. AMMO Pack Dimensions (Dimensions in mm)
ZL1
1061
•
rl\)-------l\~~\
_i
t
®
1
0:=1.==-330===~1
ZL1~
10SI,@}-
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-11
TO-92 TAPE REEL AND LEAD FORMING (PRO ELECTRON)
Figure 4. Ordering Notes
1. Each package (AMMO and REEL) contains two thousand pieces: orders have to be e multiple of 2000.
2. How to choose a style of Reel Winding?
- Determine the pinout of the device (Style Number - see Product Data Sheet)
- Determine with the customer which lead he wishes to see first when pulling the tape.
- Match both Style Number and First Lead information to find compatible options (see table in Figure 4).
H
TOP VIEW
TAPE DIRECTlON,--...
Zl1(06)
First Lead Seen
@
REEL Tape Option
Pinning
Bottom View
Style
Rl2
Rl
Rl1
Zl1(05)
AMMO Pack Option
RL1
RL
RLZ
ZL1(051*
ZL1(06)*
Collector
Emitter
Collector
Base
Base
Emitter
Collector
Base
Emitter
Collector
Emitter
Collector
Base
Emitter
Collector
Collector
Emitter
Collector
Base
Base
Emitter
Collector
Base
Emitter
Collector
Drain
Gate
Drain
Source
Gate
Drain
Source
Gate
Drain
Source
Drain
Drain
Gate
Drain
Source
Gate
Drain
Source
Drain
Transistors
1
17
•
2
14
21
1
2
E
C
B
E
C
B
B
E
C
E
3
C
E
C
B
B
FETs
23
5
22
30
1
G
0
S
0
2
3
S
S
G
G
0
G
0
S
Drain
Example:
BC237B with Emitter first lead from tape ... (see Data Sheet for style)
Style 17 gives RL 1 option for Tape on REEL or AMMO Pack accessed from side
os.
*ZL2 is the same as ZL 1 except the unit at the fold is missing and each row is 24 units.
MOTOROLA SMALL-SIGNAL l'RANSISTORS. FETs AND DIODES
6-12
TO-92 TAPE REEL AND LEAD FORMING (PRO ELECTRON)
Figure 5. Adhesion Pull Test
Figure 6. Adhesion Pull Test No.2
Figure 7. Adhesion Pull Test No.3
500 GRAM PULL FORCE
100 GRAM
PULL FORCE -~IIIF------
....
! _ ...t:a>::::==::z~1HOLDING
FIXTURE
The component shall not pull free with
a 300 gram load applied to the leads for
3 ± 1 second.
The component shall not pull free with
a 70 gram load applied to the leads for
3 ± 1 second.
Marking Notes:
1. Minimum container and reel marking shall consist of
the following items:
a. Motorola
b. Customer Purchase Order Number
c. Quantity
d. Date of Reeling
e. Motorola Part Number
There shall be no deviation in the leads
and no component leads shall be pulled
free of the tape with a 500 gram load
applied to the component body for 3 ±
1 second.
2. Determine the pinout of the device (Style Numbersee Product Data Sheet)
3. Identify Drawing corresponding to Style Number (see
Figures 8a and 8b).
Example:
BC237B configured TO-18....
See Data Sheet for Style Number
Style 17 ... Drawing indicates Dimensions, and that position of Centre Lead is towards the round side of the product (towards the back)
Order type: BC237B18
2. Where applicable, the following items will be
included:
a. Customer Part Number
b. Device Date Code
TO-92 LEAD FORMING
Other Examples:
P2N2222-18
2N5551-5
BC337-25-5
Figure 8. Ordering Notes
P2N2222A18
BC488A18
BC547C5
How to choose Lead Form option:
Note: For reverse configurations, please consult the
factory.
1. Determine option either TO-18 or TO-5, see Dimensional Drawings
*Identify measu rement between centres of the two
outside leads:
i.e. 2.5 mm for TO-18
5.0 mm for TO-5
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
6-13
•
TO-92 Lead Forming
Ordering Notes:
When ordering Lead Formed TO-92,
verify the style per Figures la and lb.
Lead configurations conform to TO-1S or TO-5 pin circles.
Figure 1a. TO-1S Stvles and Dimensions
0.5 TYP
0.02
Styles: 17, 14, 21
IIr-
.-J
2.5 ± 0.5
0.098 ± 0.02
I.-
-I
_
9.5 MIN_
0.374
i. _ . _
fB-
T-
I
1.5 ± 0.5
0.059 ± 0.02
-lI I-
1I
LFLAT
SIDE
1 .±5
±0.5li
0.059
0.02
1.3 ± 0.3
0'051.0'~~2+:~_~~~~~~~t"I~:-:-:-:~j·~
___
-t
O'~i;P -
:::=..-
1_
9.5 MIN
0.374
J
---r;:' 0.5
lFLAT
SIDE
0.098 ± 0.02
Figure 1b. TO-5 Styles and Dimensions
_L~~=~
•
2.5 ± 0.3
0.098 ± 0.012
t
5±rr:+
0.197
FLAT
SIDE
. ___ _
rr __-=~~=====i~r-":":"~
2.5±0.5
0.098 ± 0.02
2.5 ± 0.3
0.098 + 0.012
-~
t
.
.
j
FLAT
1.5 ± 0.5
0.059 ± 0,02
. millimeters
inches
SIDE
-+- 2.5 ± 0.5
0.098 ± 0.02
DimenSions are In
MOTOROLA SMALL-SIGNAL TRANSISTORS. FETs AND DIODES
6-14
The following pages contain information on the various packages referenced on the individual data sheets. Information
includes: a picture of the package, dimensions in both millimeters
and inches, the various pinout configurations (styles), a cross
reference for case numbers, old JEDEC "TO" numbers, and the
new JEDEC "TO" designation.
Additionally, abstracts of available application notes are provided. Please contact your local sales representative for those
desired.
Package Outline
Dimensions and
Application Literature
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
7-1
•
Package Outline Dimensions
Dimensions are in inches unless otherwise noted.
CASE 20-03 TO-72 (TO-206AF) METAL
CASE 20 STYLES
,I
5TYlf1:
PlNt.SOURCE
DIM
A
8
C
0
E
NOTE: ALL RULES AND NOTES ASSOCIATED WITH TO-72
OUTUNE SHALL APPLY.
F
G
H
J
K
L
M
N
,
MIlUMETERS
MOl
MAX
.84
<52
4.32
0.53
OAI
0.76
0.48
0.41
2.54BSC
11.91
1.11
0.71
1.22
'"
<9.
."
12.70
6.35
48"8SC
1.27BSC
1.2.7
INCHES
MIN
MAX
0.209
0.178
0.170
0.016
0.230
0.195
PIN I. SOURCE
2. GATE 1
1 GATE
4 CASt LEAD
lDRAlN
4 CASt
STYLE 2:
PIN 1. SOURCE
2. GATE
3.DRAlN
4. SUBSTRATE AND
CASE LeAD
4
STYLE 5:
2. DRAIN
STYLEs:
PIN t. DRAIN
011
A
8
C
0
E
F
G
H
J
K
l
M
N
P
-
MIN
SUSSmATE
P\N1.ORAIN
2.SOUACE
0.030
0.016
0.019
o.l00BSC
0.036
0.048
0.028
0.048
0.500
0.2!il
""BSC
O.05OBSC
0.050
3. GATE
4. CASE LEAD
STYLE 4:
PIN 1. SOURCE
2. GATE
3.DlWN
4. GATE 2SUBSTRATE
AND CASE
STYLE 7;
PIN 1. DRAIN
2.SDURCE
•
STYLE 1.
_-,
r..t:~c
r
1. l
___
~
K
:~
--JG
PIN!.EMITTER
2. BASE
3. COLLECTOR
lCOLJ.EcrOR
4. CASE AND
SUBSTRATE
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